Project Career: An individualized postsecondary approach to promoting independence, functioning, and employment success among students with traumatic brain injuries.

PubMed

Minton, Deborah; Elias, Eileen; Rumrill, Phillip; Hendricks, Deborah J; Jacobs, Karen; Leopold, Anne; Nardone, Amanda; Sampson, Elaine; Scherer, Marcia; Gee Cormier, Aundrea; Taylor, Aiyana; DeLatte, Caitlin

2017-09-14

Project Career is a five-year interdisciplinary demonstration project funded by NIDILRR. It provides technology-driven supports, merging Cognitive Support Technology (CST) evidence-based practices and rehabilitation counseling, to improve postsecondary and employment outcomes for veteran and civilian undergraduate students with traumatic brain injury (TBI). Provide a technology-driven individualized support program to improve career and employment outcomes for students with TBI. Project staff provide assessments of students' needs relative to assistive technology, academic achievement, and career preparation; provide CST training to 150 students; match students with mentors; provide vocational case management; deliver job development and placement assistance; and maintain an electronic portal regarding accommodation and career resources. Participating students receive cognitive support technology training, academic enrichment, and career preparatory assistance from trained professionals at three implementation sites. Staff address cognitive challenges using the 'Matching Person with Technology' assessment to accommodate CST use (iPad and selected applications (apps)). JBS International (JBS) provides the project's evaluation. To date, 117 students participate with 63% report improved life quality and 75% report improved academic performance. Project Career provides a national model based on best practices for enabling postsecondary students with TBI to attain academic, employment, and career goals.

Cytochrome C oxidase subunit I barcodes provide an efficient tool for Jinqian Baihua She (Bungarus parvus) authentication

PubMed Central

Chao, Zhi; Liao, Jing; Liang, Zhenbiao; Huang, Suhua; Zhang, Liang; Li, Junde

2014-01-01

Objective: To test the feasibility of DNA barcoding for accurate identification of Jinqian Baihua She and its adulterants. Materials and Methods: Standard cytochrome C oxidase subunit I (COI) gene fragments were sequenced for DNA barcoding of 39 samples from 9 snake species, including Bungarus multicinctus, the officially recognized origin animal by Chinese Pharmacopoeia, and other 8 adulterate species. The aligned sequences, 658 base pairs in length, were analyzed for divergence using the Kimura-2-parameter (K2P) distance model with MEGA5.0. Results: The mean intraspecific K2P distance was 0.0103 and the average interspecific genetic distance was 0.2178 in B. multicinctus, far greater than the minimal interspecific genetic distance of 0.027 recommended for species identification. A neighbor-joining (NJ) tree was constructed, in which each species formed a monophyletic clade with bootstrap supports of 100%. All the data were submitted to Barcode of Life Data system version 3.0 (BOLD, http://www.barcodinglife.org) under the project title “DNA barcoding Bungarus multicinctus and its adulterants”. Ten samples of commercially available crude drugs of JBS were identified using the identification engine provided by BOLD. All the samples were clearly identified at the species level, among which five were found to be the adulterants and identified as Dinodon rufozonatum. Conclusion: DNA barcoding using the standard COI gene fragments provides an effective and accurate means for JBS identification and authentication. PMID:25422545

Cardiovascular risk assessment of South Asians in a religious setting: a feasibility study.

PubMed

Rao, N; Eastwood, S V; Jain, A; Shah, M; Leurent, B; Harvey, D; Robertson, L; Walters, K; Persaud, J W; Mikhailidis, D P; Nair, D R

2012-03-01

South Asians in the UK have high cardiovascular disease (CVD) mortality. Therefore, this population is likely to benefit from screening programmes. To address this issue, an initiative was set up between the Royal Free Hampstead NHS Trust, H.E.A.R.T. UK and two Hindu temples in North London to provide screening for CVD risk factors in the community. A total of 434 individuals of Gujarati Indian origin were screened. Measurements included anthropometry, blood pressure and lipid profiles. Three different scoring systems: Framingham, Joint British Societies' 2 and QRISK2 were used to estimate CVD risk. At least one modifiable CVD risk factor was present in 92% of the individuals screened; 52% were hypertensive, 40% were obese, 75% had central adiposity and 10% had total cholesterol/high density lipoprotein cholesterol ratio > 6. In addition, 37% of a subset of 104 individuals with a fasting sample fulfilled the diagnostic criteria for metabolic syndrome. Overall, 15% of participants screened had a 10-year CV risk score > 20% using QRISK2. The three risk score calculators showed moderate agreement: QRISK2 and JBS2 (kappa 0.61, 95% CI 0.54-0.67), QRISK2 and Framingham (kappa 0.63, 95% CI 0.57-0.70) and JBS2 and Framingham (kappa 0.70, 95% CI 0.64-0.75). A high prevalence of modifiable risk factors for CVD was detected in the population screened. © 2011 Blackwell Publishing Ltd.

FTIR study of silicon carbide amorphization by heavy ion irradiations

NASA Astrophysics Data System (ADS)

Costantini, Jean-Marc; Miro, Sandrine; Pluchery, Olivier

2017-03-01

We have measured at room temperature (RT) the Fourier-transform infra-red (FTIR) absorption spectra of ion-irradiated thin epitaxial films of cubic silicon carbide (3C-SiC) with 1.1 µm thickness on a 500 µm thick (1 0 0) silicon wafer substrate. Irradiations were carried out at RT with 2.3 MeV 28Si+ ions and 3.0 MeV 84Kr+ ions for various fluences in order to induce amorphization of the SiC film. Ion projected ranges were adjusted to be slightly larger than the film thickness so that the whole SiC layers were homogeneously damaged. FTIR spectra of virgin and irradiated samples were recorded for various incidence angles from normal incidence to Brewster’s angle. We show that the amorphization process in ion-irradiated 3C-SiC films can be monitored non-destructively by FTIR absorption spectroscopy without any major interference of the substrate. The compared evolutions of TO and LO peaks upon ion irradiation yield valuable information on the damage process. Complementary test experiments were also performed on virgin silicon nitride (Si3N4) self-standing films for similar conditions. Asymmetrical shapes were found for TO peaks of SiC, whereas Gaussian profiles are found for LO peaks. Skewed Gaussian profiles, with a standard deviation depending on wave number, were used to fit asymmetrical peaks for both materials. A new methodology for following the amorphization process is proposed on the basis of the evolution of fitted IR absorption peak parameters with ion fluence. Results are discussed with respect to Rutherford backscattering spectrometry channeling and Raman spectroscopy analysis.

The Abundance of SiC2 in Carbon Star Envelopes: Evidence that SiC2 is a gas-phase precursor of SiC dust.

PubMed

Massalkhi, Sarah; Agúndez, M; Cernicharo, J; Velilla Prieto, L; Goicoechea, J R; Quintana-Lacaci, G; Fonfría, J P; Alcolea, J; Bujarrabal, V

2018-03-01

Silicon carbide dust is ubiquitous in circumstellar envelopes around C-rich AGB stars. However, the main gas-phase precursors leading to the formation of SiC dust have not yet been identified. The most obvious candidates among the molecules containing an Si-C bond detected in C-rich AGB stars are SiC 2 , SiC, and Si 2 C. To date, the ring molecule SiC 2 has been observed in a handful of evolved stars, while SiC and Si 2 C have only been detected in the C-star envelope IRC +10216. We aim to study how widespread and abundant SiC 2 , SiC, and Si 2 C are in envelopes around C-rich AGB stars and whether or not these species play an active role as gas-phase precursors of silicon carbide dust in the ejecta of carbon stars. We carried out sensitive observations with the IRAM 30m telescope of a sample of 25 C-rich AGB stars to search for emission lines of SiC 2 , SiC, and Si 2 C in the λ 2 mm band. We performed non-LTE excitation and radiative transfer calculations based on the LVG method to model the observed lines of SiC 2 and to derive SiC 2 fractional abundances in the observed envelopes. We detect SiC 2 in most of the sources, SiC in about half of them, and do not detect Si 2 C in any source, at the exception of IRC +10216. Most of these detections are reported for the first time in this work. We find a positive correlation between the SiC and SiC 2 line emission, which suggests that both species are chemically linked, the SiC radical probably being the photodissociation product of SiC 2 in the external layer of the envelope. We find a clear trend in which the denser the envelope, the less abundant SiC 2 is. The observed trend is interpreted as an evidence of efficient incorporation of SiC 2 onto dust grains, a process which is favored at high densities owing to the higher rate at which collisions between particles take place. The observed behavior of a decline in the SiC 2 abundance with increasing density strongly suggests that SiC 2 is an important gas-phase precursor of SiC dust in envelopes around carbon stars.

Stress Analysis of Silicon Carbide Microelectromechanical Systems Using Raman Spectroscopy

DTIC Science & Technology

2003-03-01

conformally coated with SiC[2]...........................4 2.1: Silicon carbide grinding stones or “carborundum” [1...open up contact areas to SiC-2 (mask SiC2_SiC3_VIA). Then, a 1.5 µm- thick SiC “cap” layer (SiC-3) is deposited. Note that the SiC-3 conformally coats ...84 5.2: Surface profile across the teeth of a SiC3 comb drive...........................................85 xi

The Abundance of SiC2 in Carbon Star Envelopes⋆: Evidence that SiC2 is a gas-phase precursor of SiC dust

PubMed Central

Massalkhi, Sarah; Agúndez, M.; Cernicharo, J.; Velilla Prieto, L.; Goicoechea, J. R.; Quintana-Lacaci, G.; Fonfría, J. P.; Alcolea, J.; Bujarrabal, V.

2017-01-01

Context Silicon carbide dust is ubiquitous in circumstellar envelopes around C-rich AGB stars. However, the main gas-phase precursors leading to the formation of SiC dust have not yet been identified. The most obvious candidates among the molecules containing an Si–C bond detected in C-rich AGB stars are SiC2, SiC, and Si2C. To date, the ring molecule SiC2 has been observed in a handful of evolved stars, while SiC and Si2C have only been detected in the C-star envelope IRC +10216. Aims We aim to study how widespread and abundant SiC2, SiC, and Si2C are in envelopes around C-rich AGB stars and whether or not these species play an active role as gas-phase precursors of silicon carbide dust in the ejecta of carbon stars. Methods We carried out sensitive observations with the IRAM 30m telescope of a sample of 25 C-rich AGB stars to search for emission lines of SiC2, SiC, and Si2C in the λ 2 mm band. We performed non-LTE excitation and radiative transfer calculations based on the LVG method to model the observed lines of SiC2 and to derive SiC2 fractional abundances in the observed envelopes. Results We detect SiC2 in most of the sources, SiC in about half of them, and do not detect Si2C in any source, at the exception of IRC +10216. Most of these detections are reported for the first time in this work. We find a positive correlation between the SiC and SiC2 line emission, which suggests that both species are chemically linked, the SiC radical probably being the photodissociation product of SiC2 in the external layer of the envelope. We find a clear trend in which the denser the envelope, the less abundant SiC2 is. The observed trend is interpreted as an evidence of efficient incorporation of SiC2 onto dust grains, a process which is favored at high densities owing to the higher rate at which collisions between particles take place. Conclusions The observed behavior of a decline in the SiC2 abundance with increasing density strongly suggests that SiC2 is an important gas-phase precursor of SiC dust in envelopes around carbon stars. PMID:29628518

Effect of SiC particle size on the microstructure and properties of cold-sprayed Al/SiCp composite coating

NASA Astrophysics Data System (ADS)

Yu, Min; Hua, Junwei

2017-07-01

The Al5056/SiC composite coatings were prepared by cold spraying. Experimental results show that the SiC content in the composite coating deposited with the SiC powder having an average size of 67 μm (Al5056/SiC-67) is similar to that deposited with the SiC powder having an average size of 27 μm (Al5056/SiC-27). The microhardness and cohesion strength of Al5056/SiC-67 coating are higher than those of the Al5056/SiC-27 coating. In addition, the Al5056/SiC-67 coating having a superior wear resistance because of the coarse SiC powder with a superior kinetic energy contributes to the deformation resistance of the matrix Al5056 particles.

A dual-phase microstructural approach to damage and fracture of Ti3SiC2/SiC joints

NASA Astrophysics Data System (ADS)

Nguyen, Ba Nghiep; Henager, Charles H.; Kurtz, Richard J.

2018-02-01

The microcracking mechanisms responsible for Ti3SiC2/SiC joint damage observed at the macroscopic scale after neutron irradiation experiments are investigated in detail. A dual-phase microstructural approach to damage and fracture of Ti3SiC2/SiC joints is developed that uses a finely discretized two-phase domain based on a digital image of an actual microstructure involving embedded Ti3SiC2 and SiC phases. The behaviors of SiC and Ti3SiC2 in the domain are described by the continuum damage mechanics (CDM) model reported in Nguyen et al., J. Nucl. Mater., 2017, 495:504-515. This CDM model describes microcracking damage in brittle ceramics caused by thermomechanical loading and irradiation-induced swelling. The dual-phase microstructural model is applied to predict the microcracking mechanisms occurring in a typical Ti3SiC2/SiC joint subjected to heating to 800 °C followed by irradiation-induced swelling at this temperature and cooling to room temperature after the applied swelling has reached the maximum swelling levels observed in the experiments for SiC and Ti3SiC2. The model predicts minor damage of the joint after heating but significant microcracking in the SiC phase and along the boundaries between SiC and Ti3SiC2 as well as along the bonding joint during irradiation-induced swelling and cooling to room temperature. These predictions qualitatively agree with the limited experimental observations of joint damage at this irradiation temperature.

Abundance of SiC2 in carbon star envelopes

NASA Astrophysics Data System (ADS)

Massalkhi, S.; Agúndez, M.; Cernicharo, J.; Velilla Prieto, L.; Goicoechea, J. R.; Quintana-Lacaci, G.; Fonfría, J. P.; Alcolea, J.; Bujarrabal, V.

2018-03-01

Context. Silicon carbide dust is ubiquitous in circumstellar envelopes around C-rich asymptotic giant branch (AGB) stars. However, the main gas-phase precursors leading to the formation of SiC dust have not yet been identified. The most obvious candidates among the molecules containing an Si-C bond detected in C-rich AGB stars are SiC2, SiC, and Si2C. To date, the ring molecule SiC2 has been observed in a handful of evolved stars, while SiC and Si2C have only been detected in the C-star envelope IRC +10216. Aim. We aim to study how widespread and abundant SiC2, SiC, and Si2C are in envelopes around C-rich AGB stars, and whether or not these species play an active role as gas-phase precursors of silicon carbide dust in the ejecta of carbon stars. Methods: We carried out sensitive observations with the IRAM 30 m telescope of a sample of 25 C-rich AGB stars to search for emission lines of SiC2, SiC, and Si2C in the λ 2 mm band. We performed non-LTE excitation and radiative transfer calculations based on the LVG method to model the observed lines of SiC2 and to derive SiC2 fractional abundances in the observed envelopes. Results: We detect SiC2 in most of the sources, SiC in about half of them, and do not detect Si2C in any source except IRC +10216. Most of these detections are reported for the first time in this work. We find a positive correlation between the SiC and SiC2 line emission, which suggests that both species are chemically linked; the SiC radical is probably the photodissociation product of SiC2 in the external layer of the envelope. We find a clear trend where the denser the envelope, the less abundant SiC2 is. The observed trend is interpreted as evidence of efficient incorporation of SiC2 onto dust grains, a process that is favored at high densities owing to the higher rate at which collisions between particles take place. Conclusions: The observed behavior of a decline in the SiC2 abundance with increasing density strongly suggests that SiC2 is an important gas-phase precursor of SiC dust in envelopes around carbon stars. Based on observations carried out with the IRAM 30 m Telescope. IRAM is supported by INSU/CNRS (France), MPG (Germany), and IGN (Spain).

A dual-phase microstructural approach to damage and fracture of Ti 3SiC 2/SiC joints

DOE Office of Scientific and Technical Information (OSTI.GOV)

Nguyen, Ba Nghiep; Henager, Charles H.; Kurtz, Richard J.

We investigate the microcracking mechanisms responsible for Ti 3SiC 2/SiC joint damage observed at the macroscopic scale after neutron irradiation experiments in detail. A dual-phase microstructural approach to damage and fracture of Ti 3SiC 2/SiC joints is developed that uses a finely discretized two-phase domain based on a digital image of an actual microstructure involving embedded Ti 3SiC 2 and SiC phases. The behaviors of SiC and Ti 3SiC 2 in the domain are described by the continuum damage mechanics (CDM) model reported in Nguyen et al., J. Nucl. Mater., 2017, 495:504–515. This CDM model describes microcracking damage in brittlemore » ceramics caused by thermomechanical loading and irradiation-induced swelling. The dual-phase microstructural model is applied to predict the microcracking mechanisms occurring in a typical Ti 3SiC 2/SiC joint subjected to heating to 800 °C followed by irradiation-induced swelling at this temperature and cooling to room temperature after the applied swelling has reached the maximum swelling levels observed in the experiments for SiC and Ti 3SiC 2. The model predicts minor damage of the joint after heating but significant microcracking in the SiC phase and along the boundaries between SiC and Ti 3SiC 2 as well as along the bonding joint during irradiation-induced swelling and cooling to room temperature. Our predictions qualitatively agree with the limited experimental observations of joint damage at this irradiation temperature.« less

A dual-phase microstructural approach to damage and fracture of Ti 3SiC 2/SiC joints

DOE PAGES

Nguyen, Ba Nghiep; Henager, Charles H.; Kurtz, Richard J.

2017-12-05

We investigate the microcracking mechanisms responsible for Ti 3SiC 2/SiC joint damage observed at the macroscopic scale after neutron irradiation experiments in detail. A dual-phase microstructural approach to damage and fracture of Ti 3SiC 2/SiC joints is developed that uses a finely discretized two-phase domain based on a digital image of an actual microstructure involving embedded Ti 3SiC 2 and SiC phases. The behaviors of SiC and Ti 3SiC 2 in the domain are described by the continuum damage mechanics (CDM) model reported in Nguyen et al., J. Nucl. Mater., 2017, 495:504–515. This CDM model describes microcracking damage in brittlemore » ceramics caused by thermomechanical loading and irradiation-induced swelling. The dual-phase microstructural model is applied to predict the microcracking mechanisms occurring in a typical Ti 3SiC 2/SiC joint subjected to heating to 800 °C followed by irradiation-induced swelling at this temperature and cooling to room temperature after the applied swelling has reached the maximum swelling levels observed in the experiments for SiC and Ti 3SiC 2. The model predicts minor damage of the joint after heating but significant microcracking in the SiC phase and along the boundaries between SiC and Ti 3SiC 2 as well as along the bonding joint during irradiation-induced swelling and cooling to room temperature. Our predictions qualitatively agree with the limited experimental observations of joint damage at this irradiation temperature.« less

Erosion and strength degradation of biomorphic SiC.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Martinez-Fernandez, J.; de Arellano-Lopez, A. R; Varela-Feria, F. M.

2004-05-01

Solid-particle-erosion studies were conducted on biomorphic SiC based on eucalyptus and pine, reaction-bonded (RB) SiC, and hot-pressed (HP) SiC. The erodents were angular SiC abrasives of average diameter 63, 143, or 390 {mu}m and the impact velocity was 100 m s{sup -1}. Impact occurred at normal incidence. Material loss in all targets occurred by brittle fracture. The biomorphic specimens eroded by formation of both lateral and radial cracks and their erosion rates were higher than both conventional SiCs. The RB SiC eroded as a classic brittle material, by formation and propagation of lateral cracks. The HP SiC, the hardest target,more » was the most erosion resistant. In erosion of the HP SiC, the abrasive particles, especially the largest ones, fragmented upon impact. The resulting dissipation of energy led to relatively low erosion rates. Flexural strength before and after erosion was measured for the biomorphic eucalyptus, RB SiC, and HP SiC. Erosion damage reduced the flexural strengths of all of the specimens. The relative strength reductions were lowest for the biomorphic eucalyptus and highest for the HP SiC. The hot-pressed SiC responded as predicted by accepted models of impact damage in brittle solids. The responses of the biomorphic and reaction-bonded SiC specimens were modeled as if they consisted of only SiC and porosity. This approximation agreed reasonably well with observed degradations of strength.« less

Lederberg on bacterial recombination, Haldane, and cold war genetics: an interview.

PubMed

Sarkar, Sahotra

2014-01-01

Joshua Lederberg (1925-2008), was one of the pioneers of molecular genetics perhaps best known for his discovery of genetic recombination in bacteria which earned him a Nobel Prize in 1958 (shared with George Beadle and Edward Tatum). Lederberg's interests were broad including the origin of life, exobiology (a term that he coined) and emerging diseases and artificial intelligence in his, later years. This article contains the transcription of an interview in excerpts, docu- menting the interactions between Lederberg and fellow biologist J.B.S. Haldane wlich lasted from 1946 until Haldane's death in Kolkata (then Calcutta) in 1964.

Analysis of structural relationship among the occupational dysfunction on the psychological problem in healthcare workers: a study using structural equation modeling

PubMed Central

Kyougoku, Makoto

2015-01-01

Purpose. The purpose of this study is to demonstrate the hypothetical model based on structural relationship with the occupational dysfunction on psychological problems (stress response, burnout syndrome, and depression) in healthcare workers. Method. Three cross sectional studies were conducted to assess the following relations: (1) occupational dysfunction on stress response (n = 468), (2) occupational dysfunction on burnout syndrome (n = 1,142), and (3) occupational dysfunction on depression (n = 687). Personal characteristics were collected through a questionnaire (such as age, gender, and job category, opportunities for refreshment, time spent on leisure activities, and work relationships) as well as the Classification and Assessment of Occupational Dysfunction (CAOD). Furthermore, study 1 included the Stress Response Scale-18 (SRS-18), study 2 used the Japanese Burnout Scale (JBS), and study 3 employed the Center for Epidemiological Studies Depression Scale (CES-D). The Kolmogorov–Smirnov test, confirmatory factor analysis (CFA), exploratory factor analysis (EFA), and path analysis of structural equation modeling (SEM) analysis were used in all of the studies. EFA and CFA were used to measure structural validity of four assessments; CAOD, SRS-18, JBS, and CES-D. For examination of a potential covariate, we assessed the correlation of the total and factor score of CAOD and personal factors in all studies. Moreover, direct and indirect effects of occupational dysfunction on stress response (Study 1), burnout syndrome (Study 2), and depression (Study 3) were also analyzed. Results. In study 1, CAOD had 16 items and 4 factors. In Study 2 and 3, CAOD had 16 items and 5 factors. SRS-18 had 18 items and 3 factors, JBS had 17 items and 3 factors, and CES-D had 20 items and 4 factors. All studies found that there were significant correlations between the CAOD total score and the personal factor that included opportunities for refreshment, time spent on leisure activities, and work relationships (p < 0.01). The hypothesis model results suggest that the classification of occupational dysfunction had good fit on the stress response (RMSEA = 0.061, CFI = 0.947, and TLI = 0.943), burnout syndrome (RMSEA = 0.076, CFI = 0.919, and TLI = 0.913), and depression (RMSEA = 0.060, CFI = 0.922, TLI = 0.917). Moreover, the detected covariates include opportunities for refreshment, time spent on leisure activities, and work relationships on occupational dysfunction. Conclusion. Our findings indicate that psychological problems are associated with occupational dysfunction in healthcare workers. Reduction of occupational dysfunction might be a strategy of better preventive occupational therapies for healthcare workers with psychological problems. However, longitudinal studies will be needed to determine a causal relationship. PMID:26618078

Analysis of structural relationship among the occupational dysfunction on the psychological problem in healthcare workers: a study using structural equation modeling.

PubMed

Teraoka, Mutsumi; Kyougoku, Makoto

2015-01-01

Purpose. The purpose of this study is to demonstrate the hypothetical model based on structural relationship with the occupational dysfunction on psychological problems (stress response, burnout syndrome, and depression) in healthcare workers. Method. Three cross sectional studies were conducted to assess the following relations: (1) occupational dysfunction on stress response (n = 468), (2) occupational dysfunction on burnout syndrome (n = 1,142), and (3) occupational dysfunction on depression (n = 687). Personal characteristics were collected through a questionnaire (such as age, gender, and job category, opportunities for refreshment, time spent on leisure activities, and work relationships) as well as the Classification and Assessment of Occupational Dysfunction (CAOD). Furthermore, study 1 included the Stress Response Scale-18 (SRS-18), study 2 used the Japanese Burnout Scale (JBS), and study 3 employed the Center for Epidemiological Studies Depression Scale (CES-D). The Kolmogorov-Smirnov test, confirmatory factor analysis (CFA), exploratory factor analysis (EFA), and path analysis of structural equation modeling (SEM) analysis were used in all of the studies. EFA and CFA were used to measure structural validity of four assessments; CAOD, SRS-18, JBS, and CES-D. For examination of a potential covariate, we assessed the correlation of the total and factor score of CAOD and personal factors in all studies. Moreover, direct and indirect effects of occupational dysfunction on stress response (Study 1), burnout syndrome (Study 2), and depression (Study 3) were also analyzed. Results. In study 1, CAOD had 16 items and 4 factors. In Study 2 and 3, CAOD had 16 items and 5 factors. SRS-18 had 18 items and 3 factors, JBS had 17 items and 3 factors, and CES-D had 20 items and 4 factors. All studies found that there were significant correlations between the CAOD total score and the personal factor that included opportunities for refreshment, time spent on leisure activities, and work relationships (p < 0.01). The hypothesis model results suggest that the classification of occupational dysfunction had good fit on the stress response (RMSEA = 0.061, CFI = 0.947, and TLI = 0.943), burnout syndrome (RMSEA = 0.076, CFI = 0.919, and TLI = 0.913), and depression (RMSEA = 0.060, CFI = 0.922, TLI = 0.917). Moreover, the detected covariates include opportunities for refreshment, time spent on leisure activities, and work relationships on occupational dysfunction. Conclusion. Our findings indicate that psychological problems are associated with occupational dysfunction in healthcare workers. Reduction of occupational dysfunction might be a strategy of better preventive occupational therapies for healthcare workers with psychological problems. However, longitudinal studies will be needed to determine a causal relationship.

Investigation on mechanical behavior and material characteristics of various weight composition of SiCp reinforced aluminium metal matrix composite

NASA Astrophysics Data System (ADS)

Pichumani, Sivachidambaram; Srinivasan, Raghuraman; Ramamoorthi, Venkatraman

2018-02-01

Aluminium - silicon carbide (Al - SiC) metal matrix composite is produced with following wt % of SiC reinforcement (4%, 8% & 12%) using stir casting method. Mechanical testing such as micro hardness, tensile testing and bend testing were performed. Characterizations, namely micro structure, X-ray diffraction (XRD) analysis, inductive coupled plasma - optical emission spectroscopy (ICP-OES) and scanning electron microscopy (SEM) analysis, were carried out on Al - SiC composites. The presence of SiC on Al - SiC composite is confirmed through XRD technique and microstructure. The percentage of SiC was confirmed through ICP-OES technique. Increase in weight percentage of SiC tends to increase micro hardness, ultimate strength & yield strength but it reduces the bend strength and elongation (%) of the material. SEM factrography of tensile tested fractured samples of Al - 8% SiC & Al - 12% SiC showed fine dimples on fractured surface & coarse dimples fractured surface respectively. This showed significant fracture differences between Al - 8% SiC & Al - 12% SiC. From the above experiment, Al - 8% SiC had good micro hardness, ultimate strength & yield strength without significant loss in elongation (%) & bend strength.

Dimension towers of SICs. I. Aligned SICs and embedded tight frames

NASA Astrophysics Data System (ADS)

Appleby, Marcus; Bengtsson, Ingemar; Dumitru, Irina; Flammia, Steven

2017-11-01

Algebraic number theory relates SIC-POVMs in dimension d > 3 to those in dimension d(d - 2). We define a SIC in dimension d(d - 2) to be aligned to a SIC in dimension d if and only if the squares of the overlap phases in dimension d appear as a subset of the overlap phases in dimension d(d - 2) in a specified way. We give 19 (mostly numerical) examples of aligned SICs. We conjecture that given any SIC in dimension d, there exists an aligned SIC in dimension d(d - 2). In all our examples, the aligned SIC has lower dimensional equiangular tight frames embedded in it. If d is odd so that a natural tensor product structure exists, we prove that the individual vectors in the aligned SIC have a very special entanglement structure, and the existence of the embedded tight frames follows as a theorem. If d - 2 is an odd prime number, we prove that a complete set of mutually unbiased bases can be obtained by reducing an aligned SIC to this dimension.

Insight into the molecular basis of pathogen abundance: group A Streptococcus inhibitor of complement inhibits bacterial adherence and internalization into human cells.

PubMed

Hoe, Nancy P; Ireland, Robin M; DeLeo, Frank R; Gowen, Brian B; Dorward, David W; Voyich, Jovanka M; Liu, Mengyao; Burns, Eugene H; Culnan, Derek M; Bretscher, Anthony; Musser, James M

2002-05-28

Streptococcal inhibitor of complement (Sic) is a secreted protein made predominantly by serotype M1 Group A Streptococcus (GAS), which contributes to persistence in the mammalian upper respiratory tract and epidemics of human disease. Unexpectedly, an isogenic sic-negative mutant adhered to human epithelial cells significantly better than the wild-type parental strain. Purified Sic inhibited the adherence of a sic negative serotype M1 mutant and of non-Sic-producing GAS strains to human epithelial cells. Sic was rapidly internalized by human epithelial cells, inducing cell flattening and loss of microvilli. Ezrin and moesin, human proteins that functionally link the cytoskeleton to the plasma membrane, were identified as Sic-binding proteins by affinity chromatography and matrix-assisted laser desorption/ionization time-of-flight mass spectrometry analysis. Sic colocalized with ezrin inside epithelial cells and bound to the F-actin-binding site region located in the carboxyl terminus of ezrin and moesin. Synthetic peptides corresponding to two regions of Sic had GAS adherence-inhibitory activity equivalent to mature Sic and inhibited binding of Sic to ezrin. In addition, the sic mutant was phagocytosed and killed by human polymorphonuclear leukocytes significantly better than the wild-type strain, and Sic colocalized with ezrin in discrete regions of polymorphonuclear leukocytes. The data suggest that binding of Sic to ezrin alters cellular processes critical for efficient GAS contact, internalization, and killing. Sic enhances bacterial survival by enabling the pathogen to avoid the intracellular environment. This process contributes to the abundance of M1 GAS in human infections and their ability to cause epidemics.

A comparative study on electrical characteristics of 1-kV pnp and npn SiC bipolar junction transistors

NASA Astrophysics Data System (ADS)

Okuda, Takafumi; Kimoto, Tsunenobu; Suda, Jun

2018-04-01

We investigate the electrical characteristics of 1-kV pnp SiC bipolar junction transistors (BJTs) and compare them with those of npn SiC BJTs. The base resistance, current gain, and blocking capability are characterized. It is found that the base resistance of pnp SiC BJTs is two orders of magnitude lower than that of npn SiC BJTs. However, the obtained current gains are low below unity in pnp SiC BJTs, whereas npn SiC BJTs exhibit a current gain of 14 without surface passivation. The reason for the poor current gain of pnp SiC BJTs is discussed.

Durability-enhanced two-dimensional hole gas of C-H diamond surface for complementary power inverter applications

PubMed Central

Kawarada, Hiroshi; Yamada, Tetsuya; Xu, Dechen; Tsuboi, Hidetoshi; Kitabayashi, Yuya; Matsumura, Daisuke; Shibata, Masanobu; Kudo, Takuya; Inaba, Masafumi; Hiraiwa, Atsushi

2017-01-01

Complementary power field effect transistors (FETs) based on wide bandgap materials not only provide high-voltage switching capability with the reduction of on-resistance and switching losses, but also enable a smart inverter system by the dramatic simplification of external circuits. However, p-channel power FETs with equivalent performance to those of n-channel FETs are not obtained in any wide bandgap material other than diamond. Here we show that a breakdown voltage of more than 1600 V has been obtained in a diamond metal-oxide-semiconductor (MOS) FET with a p-channel based on a two-dimensional hole gas (2DHG). Atomic layer deposited (ALD) Al2O3 induces the 2DHG ubiquitously on a hydrogen-terminated (C-H) diamond surface and also acts as both gate insulator and passivation layer. The high voltage performance is equivalent to that of state-of-the-art SiC planar n-channel FETs and AlGaN/GaN FETs. The drain current density in the on-state is also comparable to that of these two FETs with similar device size and VB. PMID:28218234

Durability-enhanced two-dimensional hole gas of C-H diamond surface for complementary power inverter applications.

PubMed

Kawarada, Hiroshi; Yamada, Tetsuya; Xu, Dechen; Tsuboi, Hidetoshi; Kitabayashi, Yuya; Matsumura, Daisuke; Shibata, Masanobu; Kudo, Takuya; Inaba, Masafumi; Hiraiwa, Atsushi

2017-02-20

Complementary power field effect transistors (FETs) based on wide bandgap materials not only provide high-voltage switching capability with the reduction of on-resistance and switching losses, but also enable a smart inverter system by the dramatic simplification of external circuits. However, p-channel power FETs with equivalent performance to those of n-channel FETs are not obtained in any wide bandgap material other than diamond. Here we show that a breakdown voltage of more than 1600 V has been obtained in a diamond metal-oxide-semiconductor (MOS) FET with a p-channel based on a two-dimensional hole gas (2DHG). Atomic layer deposited (ALD) Al 2 O 3 induces the 2DHG ubiquitously on a hydrogen-terminated (C-H) diamond surface and also acts as both gate insulator and passivation layer. The high voltage performance is equivalent to that of state-of-the-art SiC planar n-channel FETs and AlGaN/GaN FETs. The drain current density in the on-state is also comparable to that of these two FETs with similar device size and V B .

Low Activation Joining of SiC/SiC Composites for Fusion Applications: Modeling Thermal and Irradiation-induced Swelling Effects on Integrity of Ti3SiC2/SiC Joint

DOE Office of Scientific and Technical Information (OSTI.GOV)

Nguyen, Ba Nghiep; Henager, Charles H.; Kurtz, Richard J.

This work developed a continuum damage mechanics model that incorporates thermal expansion combined with irradiation-induced swelling effects to study the origin of cracking observed in recent irradiation experiments. Micromechanical modeling using an Eshelby-Mori-Tanaka approach was used to compute the thermoelastic properties of the Ti3SiC2/SiC joint needed for the model. In addition, a microstructural dual-phase Ti3SiC2/SiC model was developed to determine irradiation-induced swelling of the composite joint at a given temperature resulting from differential swelling of SiC and the Ti3SiC2 MAX phase. Three cases for the miniature torsion hourglass (THG) specimens containing a Ti3SiC2/SiC joint were analyzed corresponding to three irradiationmore » temperatures: 800oC, 500oC, and 400oC.« less

Zero end-digit preference in recorded blood pressure and its impact on classification of patients for pharmacologic management in primary care — PREDICT-CVD–6

PubMed Central

Broad, Joanna; Wells, Sue; Marshall, Roger; Jackson, Rod

2007-01-01

Background Most blood pressure recordings end with a zero end-digit despite guidelines recommending measurement to the nearest 2 mmHg. The impact of rounding on management of cardiovascular disease (CVD) risk is unknown. Aim To document the use of rounding to zero end-digit and assess its potential impact on eligibility for pharmacologic management of CVD risk. Design of study Cross-sectional study. Setting A total of 23 676 patients having opportunistic CVD risk assessment in primary care practices in New Zealand. Method To simulate rounding in practice, for patients with systolic blood pressures recorded without a zero end-digit, a second blood pressure measure was generated by arithmetically rounding to the nearest zero end-digit. A 10-year Framingham CVD risk score was estimated using actual and rounded blood pressures. Eligibility for pharmacologic treatment was then determined using the Joint British Societies' JBS2 and the British Hypertension Society BHS–IV guidelines based on actual and rounded blood pressure values. Results Zero end-digits were recorded in 64% of systolic and 62% of diastolic blood pressures. When eligibility for drug treatment was based only on a Framingham 10-year CVD risk threshold of 20% or more, rounding misclassified one in 41 of all those patients subject to this error. Under the two guidelines which use different combinations of CVD risk and blood pressure thresholds, one in 19 would be misclassified under JBS2 and one in 12 under the BHS–IV guidelines mostly towards increased treatment. Conclusion Zero end-digit preference significantly increases a patient's likelihood of being classified as eligible for drug treatment. Guidelines that base treatment decisions primarily on absolute CVD risk are less susceptible to these errors. PMID:17976291

Zero end-digit preference in recorded blood pressure and its impact on classification of patients for pharmacologic management in primary care - PREDICT-CVD-6.

PubMed

Broad, Joanna; Wells, Sue; Marshall, Roger; Jackson, Rod

2007-11-01

Most blood pressure recordings end with a zero end-digit despite guidelines recommending measurement to the nearest 2 mmHg. The impact of rounding on management of cardiovascular disease (CVD) risk is unknown. To document the use of rounding to zero end-digit and assess its potential impact on eligibility for pharmacologic management of CVD risk. Cross-sectional study. A total of 23,676 patients having opportunistic CVD risk assessment in primary care practices in New Zealand. To simulate rounding in practice, for patients with systolic blood pressures recorded without a zero end-digit, a second blood pressure measure was generated by arithmetically rounding to the nearest zero end-digit. A 10-year Framingham CVD risk score was estimated using actual and rounded blood pressures. Eligibility for pharmacologic treatment was then determined using the Joint British Societies' JBS2 and the British Hypertension Society BHS-IV guidelines based on actual and rounded blood pressure values. Zero end-digits were recorded in 64% of systolic and 62% of diastolic blood pressures. When eligibility for drug treatment was based only on a Framingham 10year CVD risk threshold of 20% or more, rounding misclassified one in 41 of all those patients subject to this error. Under the two guidelines which use different combinations of CVD risk and blood pressure thresholds, one in 19 would be misclassified under JBS2 and one in 12 under the BHS-IV guidelines mostly towards increased treatment. Zero end-digit preference significantly increases a patient's likelihood of being classified as eligible for drug treatment. Guidelines that base treatment decisions primarily on absolute CVD risk are less susceptible to these errors.

SiC-based Photo-detectors for UV, VUV, EUV and Soft X-ray Detection

NASA Technical Reports Server (NTRS)

Yan, Feng

2006-01-01

A viewgraph presentation describing an ideal Silicon Carbide detector for ultraviolet, vacuum ultraviolet, extreme ultraviolet and soft x-ray detection is shown. The topics include: 1) An ideal photo-detector; 2) Dark current density of SiC photodiodes at room temperature; 3) Dark current in SiC detectors; 4) Resistive and capacitive feedback trans-impedance amplifier; 5) Avalanche gain; 6) Excess noise; 7) SNR in single photon counting mode; 8) Structure of SiC single photon counting APD and testing structure; 9) Single photon counting waveform and testing circuit; 10) Amplitude of SiC single photon counter; 11) Dark count of SiC APD photon counters; 12) Temperature-dependence of dark count rate; 13) Reduce the dark count rate by reducing the breakdown electric field; 14) Spectrum range for SiC detectors; 15) QE curves of Pt/4H-SiC photodiodes; 16) QE curve of SiC; 17) QE curves of SiC photodiode vs. penetration depth; 18) Visible rejection of SiC photodiodes; 19) Advantages of SiC photodiodes; 20) Competitors of SiC detectors; 21) Extraterrestrial solar spectra; 22) Visible-blind EUV detection; 23) Terrestrial solar spectra; and 24) Less than 1KeV soft x-ray detection.

Effects of SiC on Properties of Cu-SiC Metal Matrix Composites

NASA Astrophysics Data System (ADS)

Efe, G. Celebi; Altinsoy, I.; Ipek, M.; Zeytin, S.; Bindal, C.

2011-12-01

This paper was focused on the effects of particle size and distribution on some properties of the SiC particle reinforced Cu composites. Copper powder produced by cementation method was reinforced with SiC particles having 1 and 30 μm particle size and sintered at 700 °C. SEM studies showed that SiC particles dispersed in copper matrix homogenously. The presence of Cu and SiC components in composites were verified by XRD analysis technique. The relative densities of Cu-SiC composites determined by Archimedes' principle are ranged from 96.2% to 90.9% for SiC with 1 μm particle size, 97.0 to 95.0 for SiC with 30 μm particle size. Measured hardness of sintered compacts varied from 130 to 155 HVN for SiC having 1 μm particle size, 188 to 229 HVN for SiC having 1 μm particle size. Maximum electrical conductivity of test materials was obtained as 80.0% IACS (International annealed copper standard) for SiC with 1 μm particle size and 83.0% IACS for SiC with 30 μm particle size.

Silicon Carbide Gas Sensors for Propulsion Emissions and Safety Applications

NASA Technical Reports Server (NTRS)

Hunter, G. W.; Xu, J.; Neudeck, P. G.; Lukco, D.; Trunek, A.; Spry, D.; Lampard, P.; Androjna, D.; Makel, D.; Ward, B.

2007-01-01

Silicon carbide (SiC) based gas sensors have the ability to meet the needs of a range of aerospace propulsion applications including emissions monitoring, leak detection, and hydrazine monitoring. These applications often require sensitive gas detection in a range of environments. An effective sensing approach to meet the needs of these applications is a Schottky diode based on a SiC semiconductor. The primary advantage of using SiC as a semiconductor is its inherent stability and capability to operate at a wide range of temperatures. The complete SiC Schottky diode gas sensing structure includes both the SiC semiconductor and gas sensitive thin film metal layers; reliable operation of the SiC-based gas sensing structure requires good control of the interface between these gas sensitive layers and the SiC. This paper reports on the development of SiC gas sensors. The focus is on two efforts to better control the SiC gas sensitive Schottky diode interface. First, the use of palladium oxide (PdOx) as a barrier layer between the metal and SiC is discussed. Second, the use of atomically flat SiC to provide an improved SiC semiconductor surface for gas sensor element deposition is explored. The use of SiC gas sensors in a multi-parameter detection system is briefly discussed. It is concluded that SiC gas sensors have potential in a range of propulsion system applications, but tailoring of the sensor for each application is necessary.

Nanocrystalline SiC and Ti 3SiC 2 Alloys for Reactor Materials: Diffusion of Fission Product Surrogates

DOE Office of Scientific and Technical Information (OSTI.GOV)

Henager, Charles H.; Jiang, Weilin

2014-11-01

MAX phases, such as titanium silicon carbide (Ti 3SiC 2), have a unique combination of both metallic and ceramic properties, which make them attractive for potential nuclear applications. Ti 3SiC 2 has been suggested in the literature as a possible fuel cladding material. Prior to the application, it is necessary to investigate diffusivities of fission products in the ternary compound at elevated temperatures. This study attempts to obtain relevant data and make an initial assessment for Ti 3SiC 2. Ion implantation was used to introduce fission product surrogates (Ag and Cs) and a noble metal (Au) in Ti 3SiC 2,more » SiC, and a dual-phase nanocomposite of Ti 3SiC 2/SiC synthesized at PNNL. Thermal annealing and in-situ Rutherford backscattering spectrometry (RBS) were employed to study the diffusivity of the various implanted species in the materials. In-situ RBS study of Ti 3SiC 2 implanted with Au ions at various temperatures was also performed. The experimental results indicate that the implanted Ag in SiC is immobile up to the highest temperature (1273 K) applied in this study; in contrast, significant out-diffusion of both Ag and Au in MAX phase Ti 3SiC 2 occurs during ion implantation at 873 K. Cs in Ti 3SiC 2 is found to diffuse during post-irradiation annealing at 973 K, and noticeable Cs release from the sample is observed. This study may suggest caution in using Ti 3SiC 2 as a fuel cladding material for advanced nuclear reactors operating at very high temperatures. Further studies of the related materials are recommended.« less

Processing and Properties of SiC/MoSi2-SiC Composites Fabricated by Melt Infiltration

NASA Technical Reports Server (NTRS)

Bhatt, Ramakrishna T.; Hebsur, Mohan G.

2000-01-01

Hi-Nicalon SiC fiber reinforced MoSi2-SiC matrix composites (SiC/MoSi2-SiC) have been fabricated by the melt infiltration approach. The composite consists of approximately 60 vol%, 2-D woven BN/SiC coated Hi-Nicalon SiC fibers and approximately 40 vol% MoSi2-SiC matrix. The room temperature tensile properties and thermal conductivity of the SiC/MoSi2-SiC composites were measured and compared with those of the melt infiltrated SiC/SiC composites. The influence oi fiber architecture on tensile properties was also evaluated. Results indicate that the primary modulus, stress corresponding to deviation from linearity, and transverse thermal conductivity values for the SiC/MoSi2-SiC composites are significantly lower than those for the SiC/SiC composites. Microcracking of the matrix due to the large difference in thermal expansion between MoSi2 and SiC appears to be the reason for the lower matrix dominated properties of SiC/MoSi2-SiC composites.

Computational Modeling of Radiation Phenomenon in SiC for Nuclear Applications

NASA Astrophysics Data System (ADS)

Ko, Hyunseok

Silicon carbide (SiC) material has been investigated for promising nuclear materials owing to its superior thermo-mechanical properties, and low neutron cross-section. While the interest in SiC has been increasing, the lack of fundamental understanding in many radiation phenomena is an important issue. More specifically, these phenomena in SiC include the fission gas transport, radiation induced defects and its evolution, radiation effects on the mechanical stability, matrix brittleness of SiC composites, and low thermal conductivities of SiC composites. To better design SiC and SiC composite materials for various nuclear applications, understanding each phenomenon and its significance under specific reactor conditions is important. In this thesis, we used various modeling approaches to understand the fundamental radiation phenomena in SiC for nuclear applications in three aspects: (a) fission product diffusion through SiC, (b) optimization of thermodynamic stable self-interstitial atom clusters, (c) interface effect in SiC composite and their change upon radiation. In (a) fission product transport work, we proposed that Ag/Cs diffusion in high energy grain boundaries may be the upper boundary in unirradiated SiC at relevant temperature, and radiation enhanced diffusion is responsible for fast diffusion measured in post-irradiated fuel particles. For (b) the self-interstitial cluster work, thermodynamically stable clusters are identified as a function of cluster size, shape, and compositions using a genetic algorithm. We found that there are compositional and configurational transitions for stable clusters as the cluster size increases. For (c) the interface effect in SiC composite, we investigated recently proposed interface, which is CNT reinforced SiC composite. The analytical model suggests that CNT/SiC composites have attractive mechanical and thermal properties, and these fortify the argument that SiC composites are good candidate materials for the cladding. We used grand canonical monte carlo to optimize the interface, as a part of the stepping stone for further study using the interface.

Streptococcal inhibitor of complement (SIC) inhibits the membrane attack complex by preventing uptake of C567 onto cell membranes

PubMed Central

Fernie-King, Barbara A; Seilly, David J; Willers, Christine; Würzner, Reinhard; Davies, Alexandra; Lachmann, Peter J

2001-01-01

Streptococcal inhibitor of complement (SIC) was first described in 1996 as a putative inhibitor of the membrane attack complex of complement (MAC). SIC is a 31 000 MW protein secreted in large quantities by the virulent Streptococcus pyogenes strains M1 and M57, and is encoded by a gene which is extremely variable. In order to study further the interactions of SIC with the MAC, we have made a recombinant form of SIC (rSIC) in Escherichia coli and purified native M1 SIC which was used to raise a polyclonal antibody. SIC prevented reactive lysis of guinea pig erythrocytes by the MAC at a stage prior to C5b67 complexes binding to cell membranes, presumably by blocking the transiently expressed membrane insertion site on C7. The ability of SIC and clusterin (another putative fluid phase complement inhibitor) to inhibit complement lysis was compared, and found to be equally efficient. In parallel, by enzyme-linked immunosorbent assay both SIC and rSIC bound strongly to C5b67 and C5b678 complexes and to a lesser extent C5b-9, but only weakly to individual complement components. The implications of these data for virulence of SIC-positive streptococci are discussed, in light of the fact that Gram-positive organisms are already protected against complement lysis by the presence of their peptidoglycan cell walls. We speculate that MAC inhibition may not be the sole function of SIC. PMID:11454069

Silicon carbide ceramic membranes

NASA Astrophysics Data System (ADS)

Suwanmethanond, Varaporn

This dissertation focuses on the preparation of silicon carbide (SiC) ceramic membranes on SiC substrates. An original technique of SiC porous substrate preparation using sintering methods was developed during the work for the completion of the dissertation. The resulting SiC substrates have demonstrated high porosity, high internal surface area, well interconnected surface pore network and, at the same time, good thermal, chemical and mechanical stability. In a further development, sol-gel techniques were used to deposit micro-porous SiC membranes on these SiC porous substrates. The SiC membranes were characterized by a variety of techniques: ideal gas selectivity (He and N2), XRD, BET, SEM, XPS, and AFM. The characterization results confirmed that the asymmetric sol-gel SiC membranes were of high quality, with no cracks or pinholes, and exhibiting high resistance to corrosion and high hydro-thermal stability. In conclusion, the SiC ceramic membrane work was successfully completed. Two publications in international peer reviewed journals resulted out of this work.

Leakage current reduction of vertical GaN junction barrier Schottky diodes using dual-anode process

NASA Astrophysics Data System (ADS)

Hayashida, Tetsuro; Nanjo, Takuma; Furukawa, Akihiko; Watahiki, Tatsuro; Yamamuka, Mikio

2018-04-01

The origin of the leakage current of a trench-type vertical GaN diode was discussed. We found that the edge of p-GaN is the main leakage spot. To reduce the reverse leakage current at the edge of p-GaN, a dual-anode process was proposed. As a result, the reverse blocking voltage defined at the leakage current density of 1 mA/cm2 of a vertical GaN junction barrier Schottky (JBS) diode was improved from 780 to 1,190 V, which is the highest value ever reported for vertical GaN Schottky barrier diodes (SBDs).

Streptococcal inhibitor of complement promotes innate immune resistance phenotypes of invasive M1T1 group A Streptococcus.

PubMed

Pence, Morgan A; Rooijakkers, Suzan H M; Cogen, Anna L; Cole, Jason N; Hollands, Andrew; Gallo, Richard L; Nizet, Victor

2010-01-01

Streptococcal inhibitor of complement (SIC) is a highly polymorphic extracellular protein and putative virulence factor secreted by M1 and M57 strains of group A Streptococcus (GAS). The sic gene is highly upregulated in invasive M1T1 GAS isolates following selection of mutations in the covR/S regulatory locus in vivo. Previous work has shown that SIC (allelic form 1.01) binds to and inactivates complement C5b67 and human cathelicidin LL-37. We examined the contribution of SIC to innate immune resistance phenotypes of GAS in the intact organism, using (1) targeted deletion of sic in wild-type and animal-passaged (covS mutant) M1T1 GAS harboring the sic 1.84 allele and (2) heterologous expression of sic in M49 GAS, which does not possess the sic genein its genome. We find that M1T1 SIC production is strongly upregulated upon covS mutation but that the sic gene is not required for generation and selection of covS mutants in vivo. SIC 1.84 bound both human and murine cathelicidins and was necessary and sufficient to promote covS mutant M1T1 GAS resistance to LL-37, growth in human whole blood and virulence in a murine model of systemic infection. Finally, the sic knockout mutant M1T1 GAS strain was deficient in growth in human serum and intracellular macrophage survival. We conclude that SIC contributes to M1T1 GAS immune resistance and virulence phenotypes. Copyright © 2010 S. Karger AG, Basel.

Amino Acids in the Capsid Protein of Tomato Yellow Leaf Curl Virus That Are Crucial for Systemic Infection, Particle Formation, and Insect Transmission

PubMed Central

Noris, E.; Vaira, A. M.; Caciagli, P.; Masenga, V.; Gronenborn, B.; Accotto, G. P.

1998-01-01

A functional capsid protein (CP) is essential for host plant infection and insect transmission in monopartite geminiviruses. We studied two defective genomic DNAs of tomato yellow leaf curl virus (TYLCV), Sic and SicRcv. Sic, cloned from a field-infected tomato, was not infectious, whereas SicRcv, which spontaneously originated from Sic, was infectious but not whitefly transmissible. A single amino acid change in the CP was found to be responsible for restoring infectivity. When the amino acid sequences of the CPs of Sic and SicRcv were compared with that of a closely related wild-type virus (TYLCV-Sar), differences were found in the following positions: 129 (P in Sic and SicRcv, Q in Sar), 134 (Q in Sic and Sar, H in SicRcv) and 152 (E in Sic and SicRcv, D in Sar). We constructed TYLCV-Sar variants containing the eight possible amino acid combinations in those three positions and tested them for infectivity and transmissibility. QQD, QQE, QHD, and QHE had a wild-type phenotype, whereas PHD and PHE were infectious but nontransmissible. PQD and PQE mutants were not infectious; however, they replicated and accumulated CP, but not virions, in Nicotiana benthamiana leaf discs. The Q129P replacement is a nonconservative change, which may drastically alter the secondary structure of the CP and affect its ability to form the capsid. The additional Q134H change, however, appeared to compensate for the structural modification. Sequence comparisons among whitefly-transmitted geminiviruses in terms of the CP region studied showed that combinations other than QQD are present in several cases, but never with a P129. PMID:9811744

Development of SiC Large Tapered Crystal Growth

NASA Technical Reports Server (NTRS)

Neudeck, Phil

2010-01-01

Majority of very large potential benefits of wide band gap semiconductor power electronics have NOT been realized due in large part to high cost and high defect density of commercial wafers. Despite 20 years of development, present SiC wafer growth approach is yet to deliver majority of SiC's inherent performance and cost benefits to power systems. Commercial SiC power devices are significantly de-rated in order to function reliably due to the adverse effects of SiC crystal dislocation defects (thousands per sq cm) in the SiC wafer.

Statistical Prediction of Sea Ice Concentration over Arctic

NASA Astrophysics Data System (ADS)

Kim, Jongho; Jeong, Jee-Hoon; Kim, Baek-Min

2017-04-01

In this study, a statistical method that predict sea ice concentration (SIC) over the Arctic is developed. We first calculate the Season-reliant Empirical Orthogonal Functions (S-EOFs) of monthly Arctic SIC from Nimbus-7 SMMR and DMSP SSM/I-SSMIS Passive Microwave Data, which contain the seasonal cycles (12 months long) of dominant SIC anomaly patterns. Then, the current SIC state index is determined by projecting observed SIC anomalies for latest 12 months to the S-EOFs. Assuming the current SIC anomalies follow the spatio-temporal evolution in the S-EOFs, we project the future (upto 12 months) SIC anomalies by multiplying the SI and the corresponding S-EOF and then taking summation. The predictive skill is assessed by hindcast experiments initialized at all the months for 1980-2010. When comparing predictive skill of SIC predicted by statistical model and NCEP CFS v2, the statistical model shows a higher skill in predicting sea ice concentration and extent.

Dip-coating of nano-sized CeO2 on SiC membrane and its effect on thermal diffusivity.

PubMed

Park, Jihye; Jung, Miewon

2014-05-01

CeO2-SiC mixed composite membrane was fabricated with porous SiC ceramic and cerium oxide powder synthesized by sol-gel process. This CeO2-SiC membrane and SiC membrane which is made by the purified SiC ceramic were pressed and sintered in Ar atmosphere. And then, the SiC membrane was dip-coated by cerium oxide precursor sol solution and heat-treated in air. The surface morphology, particle size, porosity and structure analysis of the mixing and dip-coating SiC membrane were monitored by FE-SEM and X-ray diffraction analysis. Surface area, pore volume and pore diameter were determined by BET instrument. Thermal diffusivity was measured by laser flash method with increasing temperature. The relation between porosity and thermal diffusivity from different preparation process has been discussed on this study.

Natural occurrence of silicon carbide in a diamondiferous kimberlite from Fuxian

USGS Publications Warehouse

Leung, I.; Guo, W.; Friedman, I.; Gleason, J.

1990-01-01

Considerable debate surrounds the existence of silicon carbide in nature, mostly owing to the problem of possible contamination by man-made SiC. Recently, Gurney1 reviewed reports of rare SiC inclusions in diamonds, and noted that SiC can only be regarded as a probable rather than proven cogenetic mineral. Here we report our observation of clusters of SiC coexisting with diamond in a kimberlite from Fuxian, China. Macrocrysts of ??-SiC are overgrown epitaxially by ??-SiC, and both polymorphs are structurally well ordered. We have also measured the carbon isotope compositions of SiC and diamonds from Fuxian. We find that SiC is more enriched in 12C than diamond by 20% relative to the PDB standard. Isotope fractionation might have occurred through an isotope exchange reaction in a common carbon reservoir. Silicon carbide may thus ultimately provide information on carbon cycling in the Earth's mantle.

Chemical reactivity of CVC and CVD SiC with UO2 at high temperatures

NASA Astrophysics Data System (ADS)

Silva, Chinthaka M.; Katoh, Yutai; Voit, Stewart L.; Snead, Lance L.

2015-05-01

Two types of silicon carbide (SiC) synthesized using two different vapor deposition processes were embedded in UO2 pellets and evaluated for their potential chemical reaction with UO2. While minor reactivity between chemical-vapor-composited (CVC) SiC and UO2 was observed at comparatively low temperatures of 1100 and 1300 °C, chemical-vapor-deposited (CVD) SiC did not show any such reactivity. However, both CVD and CVC SiCs showed some reaction with UO2 at a higher temperature (1500 °C). Elemental maps supported by phase maps obtained using electron backscatter diffraction indicated that CVC SiC was more reactive than CVD SiC at 1500 °C. Furthermore, this investigation indicated the formation of uranium carbides and uranium silicide chemical phases such as UC, USi2, and U3Si2 as a result of SiC reaction with UO2.

Factors Affecting Route Selection and Survival of Steelhead Kelts at Snake River Dams in 2012 and 2013

DOE Office of Scientific and Technical Information (OSTI.GOV)

Harnish, Ryan A.; Colotelo, Alison HA; Li, Xinya

2014-12-01

In 2012 and 2013, Pacific Northwest National Laboratory conducted a study that summarized the passage proportions and route-specific survival rates of steelhead kelts that passed through Federal Columbia River Power System (FCRPS) dams. To accomplish this, a total of 811 steelhead kelts were tagged with Juvenile Salmon Acoustic Telemetry System (JSATS) transmitters. Acoustic receivers, both autonomous and cabled, were deployed throughout the FCRPS to monitor the downstream movements of tagged-kelts. Kelts were also tagged with Passive Integrated Transponder tags to monitor passage through juvenile bypass systems and detect returning fish. The current study evaluated data collected in 2012 and 2013more » to identify individual, behavioral, environmental and dam operation variables that were related to passage and survival of steelhead kelts that passed through FCRPS dams. Bayesian model averaging of multivariable logistic regression models was used to identify the environmental, temporal, operational, individual, and behavioral variables that had the highest probability of influencing the route of passage and the route-specific survival probabilities for kelts that passed Lower Granite (LGR), Little Goose (LGS), and Lower Monumental (LMN) dams in 2012 and 2013. The posterior probabilities of the best models for predicting route of passage ranged from 0.106 for traditional spill at LMN to 0.720 for turbine passage at LGS. Generally, the behavior (depth and near-dam searching activity) of kelts in the forebay appeared to have the greatest influence on their route of passage. Shallower-migrating kelts had a higher probability of passing via the weir and deeper-migrating kelts had a higher probability of passing via the JBS and turbines than other routes. Kelts that displayed a higher level of near-dam searching activity had a higher probability of passing via the spillway weir and those that did less near-dam searching had a higher probability of passing via the JBS and turbines. The side of the river in which kelts approached the dam and dam operations also affected route of passage. Dam operations and the size and condition of kelts were found to have the greatest effect on route-specific survival probabilities for fish that passed via the spillway at LGS. That is, longer kelts and those in fair condition had a lower probability of survival for fish that passed via the spillway weir. The survival of spillway weir- and deep-spill passed kelts was positively correlated with the percent of the total discharge that passed through turbine unit 4. Too few kelts passed through the traditional spill, JBS, and turbine units to evaluate survival through these routes. The information gathered in this study describes Snake River steelhead kelt passage behavior, rates, and distributions through the FCRPS as well as provide information to biologists and engineers about the dam operations and abiotic conditions that are related to passage and survival of steelhead kelts.« less

SiC Integrated Circuits for Power Device Drivers Able to Operate in Harsh Environments

NASA Astrophysics Data System (ADS)

Godignon, P.; Alexandru, M.; Banu, V.; Montserrat, J.; Jorda, X.; Vellvehi, M.; Schmidt, B.; Michel, P.; Millan, J.

2014-08-01

The currently developed SiC electronic devices are more robust to high temperature operation and radiation exposure damage than correspondingly rated Si ones. In order to integrate the existent SiC high power and high temperature electronics into more complex systems, a SiC integrated circuit (IC) technology capable of operation at temperatures substantially above the conventional ones is required. Therefore, this paper is a step towards the development of ICs-control electronics that have to attend the harsh environment power applications. Concretely, we present the development of SiC MESFET-based digital circuitry, able to integrate gate driver for SiC power devices. Furthermore, a planar lateral power MESFET is developed with the aim of its co-integration on the same chip with the previously mentioned SiC digital ICs technology. And finally, experimental results on SiC Schottky-gated devices irradiated with protons and electrons are presented. This development is based on the Tungsten-Schottky interface technology used for the fabrication of stable SiC Schottky diodes for the European Space Agency Mission BepiColombo.

40 CFR 432.1 - General Applicability.

Code of Federal Regulations, 2011 CFR

2011-07-01

... STANDARDS MEAT AND POULTRY PRODUCTS POINT SOURCE CATEGORY § 432.1 General Applicability. As defined more... the following industrial classification codes: Standard industrial classification 1 North Americanindustrial classification system 2 SIC 0751 NAICS 311611. SIC 2011 NAICS 311612. SIC 2013 NAICS 311615. SIC...

Process for the homoepitaxial growth of single-crystal silicon carbide films on silicon carbide wafers

NASA Technical Reports Server (NTRS)

Powell, J. Anthony (Inventor)

1993-01-01

The invention is a method for growing homoepitaxial films of SiC on low tilt angle vicinal (0001) SiC wafers. The invention proposes and teaches a new theoretical model for the homoepitaxial growth of SiC films on (0001) SiC substrates. The inventive method consists of preparing the growth surface of SiC wafers slightly off-axis (from less the 0.1 to 6 deg) from the (0001) plane, subjecting the growth surface to a suitable etch, and then growing the homoepitaxial film using conventional SiC growth techniques.

Influence of CO annealing in metal-oxide-semiconductor capacitors with SiO2 films thermally grown on Si and on SiC

NASA Astrophysics Data System (ADS)

Pitthan, E.; dos Reis, R.; Corrêa, S. A.; Schmeisser, D.; Boudinov, H. I.; Stedile, F. C.

2016-01-01

Understanding the influence of SiC reaction with CO, a by-product of SiC thermal oxidation, is a key point to elucidate the origin of electrical defects in SiC metal-oxide-semiconductor (MOS) devices. In this work, the effects on electrical, structural, and chemical properties of SiO2/Si and SiO2/SiC structures submitted to CO annealing were investigated. It was observed that long annealing times resulted in the incorporation of carbon from CO in the Si substrate, followed by deterioration of the SiO2/Si interface, and its crystallization as SiC. Besides, this incorporated carbon remained in the Si surface (previous SiO2/Si region) after removal of the silicon dioxide film by HF etching. In the SiC case, an even more defective surface region was observed due to the CO interaction. All MOS capacitors formed using both semiconductor materials presented higher leakage current and generation of positive effective charge after CO annealings. Such results suggest that the negative fixed charge, typically observed in SiO2/SiC structures, is not originated from the interaction of the CO by-product, formed during SiC oxidation, with the SiO2/SiC interfacial region.

Photoluminescence of etched SiC nanowires

NASA Astrophysics Data System (ADS)

Stewart, Polite D., Jr.; Rich, Ryan; Zerda, T. W.

2010-10-01

SiC nanowires were produced from carbon nanotubes and nanosize silicon powder in a tube furnace at temperatures between 1100^oC and 1350^oC. SiC nanowires had average diameter of 30 nm and very narrow size distribution. The compound possesses a high melting point, high thermal conductivity, and excellent wear resistance. The surface of the SiC nanowires after formation is covered by an amorphous layer. The composition of that layer is not fully understood, but it is believed that in addition to amorphous SiC it contains various carbon and silicon compounds, and SiO2. The objective of the research was to modify the surface structure of these SiC nanowires. Modification of the surface was done using the wet etching method. The etched nanowires were then analyzed using Fourier Transform Infrared spectroscopy (FTIR), transmission electron microscopy (TEM), and photoluminescence (PL). FTIR and TEM analysis provided valid proof that the SiC nanowires were successfully etched. Also, the PL results showed that the SiC nanowire core did possess a fluorescent signal.

Chemical reactivity of CVC and CVD SiC with UO 2 at high temperatures

DOE PAGES

Silva, Chinthaka M.; Katoh, Yutai; Voit, Stewart L.; ...

2015-02-11

Two types of silicon carbide (SiC) synthesized using two different vapor deposition processes were embedded in UO 2 pellets and evaluated for their potential chemical reaction with UO 2. While minor reactivity between chemical-vapor-composited (CVC) SiC and UO 2 was observed at comparatively low temperatures of 1100 and 1300 C, chemical-vapor-deposited (CVD) SiC did not show any such reactivity, according to microstructural investigations. But, both CVD and CVC SiCs showed some reaction with UO 2 at a higher temperature (1500 C). Elemental maps supported by phase maps obtained using electron backscatter diffraction indicated that CVC SiC was more reactive thanmore » CVD SiC at 1500 C. Moreover, this investigation indicated the formation of uranium carbides and uranium silicide chemical phases such as UC, USi 2, and U 3Si 2 as a result of SiC reaction with UO 2.« less

Porous silicon carbide (SiC) semiconductor device

NASA Technical Reports Server (NTRS)

Shor, Joseph S. (Inventor); Kurtz, Anthony D. (Inventor)

1994-01-01

A semiconductor device employs at least one layer of semiconducting porous silicon carbide (SiC). The porous SiC layer has a monocrystalline structure wherein the pore sizes, shapes, and spacing are determined by the processing conditions. In one embodiment, the semiconductor device is a p-n junction diode in which a layer of n-type SiC is positioned on a p-type layer of SiC, with the p-type layer positioned on a layer of silicon dioxide. Because of the UV luminescent properties of the semiconducting porous SiC layer, it may also be utilized for other devices such as LEDs and optoelectronic devices.

Diodes of nanocrystalline SiC on n-/n+-type epitaxial crystalline 6H-SiC

NASA Astrophysics Data System (ADS)

Zheng, Junding; Wei, Wensheng; Zhang, Chunxi; He, Mingchang; Li, Chang

2018-03-01

The diodes of nanocrystalline SiC on epitaxial crystalline (n-/n+)6H-SiC wafers were investigated, where the (n+)6H-SiC layer was treated as cathode. For the first unit, a heavily boron doped SiC film as anode was directly deposited by plasma enhanced chemical vapor deposition method on the wafer. As to the second one, an intrinsic SiC film was fabricated to insert between the wafer and the SiC anode. The third one included the SiC anode, an intrinsic SiC layer and a lightly phosphorus doped SiC film besides the wafer. Nanocrystallization in the yielded films was illustrated by means of X-ray diffraction, transmission electronic microscope and Raman spectrum respectively. Current vs. voltage traces of the obtained devices were checked to show as rectifying behaviors of semiconductor diodes, the conduction mechanisms were studied. Reverse recovery current waveforms were detected to analyze the recovery performance. The nanocrystalline SiC films in base region of the fabricated diodes are demonstrated as local regions for lifetime control of minority carriers to improve the reverse recovery properties.

Self-Interaction Corrected Electronic Structure and Energy Gap of CuAlO2 beyond Local Density Approximation

NASA Astrophysics Data System (ADS)

Nakanishi, Akitaka

2011-05-01

We implemented a self-interaction correction (SIC) into first-principles calculation code to go beyond local density approximation and applied it to CuAlO2. Our simulation shows that the valence band width calculated within the SIC is narrower than that calculated without the SIC because the SIC makes the d-band potential deeper. The energy gap calculated within the SIC expands and is close to experimental data.

Effects of in situ synthesized mullite whisker on mechanical properties of Al2O3-SiC composite by microwave sintering

NASA Astrophysics Data System (ADS)

Dang, Xudan; Wei, Meng; Fan, Bingbing; Guan, Keke; Zhang, Rui; Long, Weimin; Zhang, Hongsong

2017-06-01

In situ synthesis of mullite whisker was introduced to Al2O3-SiC composite by microwave sintering. The effects of sintering parameters (sintering temperature, holding time and SiC particle size) on thermal shock resistance of Al2O3-SiC composite were also studied in this paper. Original SiC particles coated with SiO2 by a sol-gel method were reacted with Al2O3 particles, resulting in the in situ growth of mullite. The phase composition was identified by x-ray diffraction (XRD). The bridging of mullite whisker between Al2O3 and SiC particles was observed by scanning electron microscopy (SEM) analysis. The thermal shock resistance of samples was investigated through the combination of water quenching and three-point bending methods. The results show that the thermal shock resistance of Al2O3-SiC composite with mullite whisker reinforced remarkably, indicating better mechanical properties than the Al2O3-SiC composite without mullite whisker. Finally, the optimum process parameters (the sintering temperature of 1500 °C, the holding time of 30 min, and the SiC particle size of 5 µm) for toughening Al2O3-SiC composite by in situ synthesized mullite whisker were obtained.

Defects in Ceramic Matrix Composites and Their Impact on Elastic Properties (Postprint)

DTIC Science & Technology

2013-07-01

numerically modeled. The composite under investigation was a 10 layer T300 carbon/ SiC composite in which carbon fabric was impregnated using a polymer ...fraction. (3) Melt Infiltrated in situ BN SiC / SiC composite comprising a stochiometric SiC (Sylramic™) fiber, with an in situ boron nitride treatment...SiNC composite is listed in Table 4. Polymer derived SiC and SiNC matrix material do not ex- hibit a major change in their elastic properties at

Determination of the pure silicon monocarbide content of silicon carbide and products based on silicon carbide

NASA Technical Reports Server (NTRS)

Prost, L.; Pauillac, A.

1978-01-01

Experience has shown that different methods of analysis of SiC products give different results. Methods identified as AFNOR, FEPA, and manufacturer P, currently used to detect SiC, free C, free Si, free Fe, and SiO2 are reviewed. The AFNOR method gives lower SiC content, attributed to destruction of SiC by grinding. Two products sent to independent labs for analysis by the AFNOR and FEPA methods showed somewhat different results, especially for SiC, SiO2, and Al2O3 content, whereas an X-ray analysis showed a SiC content approximately 10 points lower than by chemical methods.

SiC As An Energetic Particle Detector

NASA Technical Reports Server (NTRS)

Yan, F.; Hicks, J.; Shappirio, Mark D.; Brown, S.; Smith, C.; Xin, X.; Zhao, J. H.

2005-01-01

Several new technologies have been introduced recently in the region of semiconductor material for solid state detectors (SSD). Of particular interest is silicon carbide (SIC) since its band gap is larger than that of pure silicon, reducing its dark current and making SIC capable of operating at high temperatures and more tolerant of radiation damage. But the trade off is that a higher band gap also means fewer electron hole pairs generated, and thus a smaller signal, for detecting incident radiation. To determine what the lower limit of SiC detectors to energetic particles is, we irradiated a SiC diode with particles ranging in energy from 50 keV to 1.6 MeV and masses from 1 to 16 amu. We found that the SiC detectors sensitivity was comparable to that of pure silicon, with the SiC detector being able to measure particles down to 50 keV/amu and possibly lower.

Surgical Informed Consent Process in Neurosurgery

PubMed Central

Park, Jaechan; Park, Hyojin

2017-01-01

The doctrine of informed consent, as opposed to medical paternalism, is intended to facilitate patient autonomy by allowing patient participation in the medical decision-making process. However, regrettably, the surgical informed consent (SIC) process is invariably underestimated and reduced to a documentary procedure to protect physicians from legal liability. Moreover, residents are rarely trained in the clinical and communicative skills required for the SIC process. Accordingly, to increase professional awareness of the SIC process, a brief history and introduction to the current elements of SIC, the obstacles to patient autonomy and SIC, benefits and drawbacks of SIC, planning of an optimal SIC process, and its application to cases of an unruptured intracranial aneurysm are all presented. Optimal informed consent process can provide patients with a good comprehension of their disease and treatment, augmented autonomy, a strong therapeutic alliance with their doctors, and psychological defenses for coping with stressful surgical circumstances. PMID:28689386

Development of Sic Gas Sensor Systems

NASA Technical Reports Server (NTRS)

Hunter, G. W.; Neudeck, P. G.; Okojie, R. S.; Beheim, G. M.; Thomas, V.; Chen, L.; Lukco, D.; Liu, C. C.; Ward, B.; Makel, D.

2002-01-01

Silicon carbide (SiC) based gas sensors have significant potential to address the gas sensing needs of aerospace applications such as emission monitoring, fuel leak detection, and fire detection. However, in order to reach that potential, a range of technical challenges must be overcome. These challenges go beyond the development of the basic sensor itself and include the need for viable enabling technologies to make a complete gas sensor system: electrical contacts, packaging, and transfer of information from the sensor to the outside world. This paper reviews the status at NASA Glenn Research Center of SiC Schottky diode gas sensor development as well as that of enabling technologies supporting SiC gas sensor system implementation. A vision of a complete high temperature microfabricated SiC gas sensor system is proposed. In the long-term, it is believed that improvements in the SiC semiconductor material itself could have a dramatic effect on the performance of SiC gas sensor systems.

Actuator operated microvalves

NASA Technical Reports Server (NTRS)

Okojie, Robert S. (Inventor)

2008-01-01

An actuator operated microvalve and the method of making same is disclosed and claimed. The microvalve comprises a SiC housing which includes a first lower portion and a second upper portion. The lower portion of the SiC housing includes a passageway therethrough, a microvalve seat, and a moveable SiC diaphragm. The SiC diaphragm includes a centrally located boss and radially extending corrugations which may be sinusoidally shaped. The boss of the SiC diaphragm moves and modulates in a range of positions between a closed position wherein the boss interengages said microvalve seat prohibiting communication of fluid through the passageway and a fully open position when the boss is spaced apart from the seat at its maximum permitting communication of fluid through said passageway. The actuator includes a SiC top plate affixed to the boss of the diaphragm and a first electrode and the second upper portion of the SiC housing further includes a second electrode.

Nanostructured catalyst supports

DOEpatents

Zhu, Yimin; Goldman, Jay L.; Qian, Baixin; Stefan, Ionel C.

2012-10-02

The present invention relates to SiC nanostructures, including SiC nanopowder, SiC nanowires, and composites of SiC nanopowder and nanowires, which can be used as catalyst supports in membrane electrode assemblies and in fuel cells. The present invention also relates to composite catalyst supports comprising nanopowder and one or more inorganic nanowires for a membrane electrode assembly.

Cheyenne-Laramie County Economic Development Strategy

DTIC Science & Technology

1986-06-01

Industry SIC 2879 4. Cosmetics and Toilet Preparations Industry SIC 2844 5. Electronic Connectors Industry SIC 3678 6. Mineral Wool Industry SIC 3296...five primary target-industries selected are: Soap and Other Detergents, Toilet Preparations, Agricultural Chemicals, Mineral Wool , and Electronic...Cheyenne include: -- soap and other detergents -- toilet preparation -- agricultural chemicals -- mineral wool -- electronic connectors * downtown

Thermomechanical Performance of C and SiC Multilayer, Fiber-Reinforced, CVI SiC Matrix Composites

NASA Technical Reports Server (NTRS)

Morscher, Gregory N.; Singh, Mrityunjay

2004-01-01

Hybrid fiber approaches have been attempted in the past to alloy desirable properties of different fiber-types for mechanical properties, thermal stress management, and oxidation resistance. Such an approach has potential for the CrSiC and SiCrSiC composite systems. SiC matrix composites with different stacking sequences of woven C fiber (T300) layers and woven Sic fiber (Hi-NicalonTM) layers were fabricated using the standard CVI process. Delamination occurred to some extent due to thermal mismatch for all of the composites. However, for the composites with a more uniform stacking sequence, minimal delamination occurred, enabling tensile properties to be determined at room temperature and elevated temperatures (stress-rupture in air). Composites were seal-coated with a CVI SiC layer as well as a proprietary C-B-Si (CBS) layer. Definite improvement in rupture behavior was observed in air for composites with increasing SiC fiber content and a CBS layer. The results will be compared to standard C fiber reinforced CVI SiC matrix and Hi-Nicalon reinforced CVI SiC matrix composites.

Sintering Behavior of Spark Plasma Sintered SiC with Si-SiC Composite Nanoparticles Prepared by Thermal DC Plasma Process

NASA Astrophysics Data System (ADS)

Yu, Yeon-Tae; Naik, Gautam Kumar; Lim, Young-Bin; Yoon, Jeong-Mo

2017-11-01

The Si-coated SiC (Si-SiC) composite nanoparticle was prepared by non-transferred arc thermal plasma processing of solid-state synthesized SiC powder and was used as a sintering additive for SiC ceramic formation. Sintered SiC pellet was prepared by spark plasma sintering (SPS) process, and the effect of nano-sized Si-SiC composite particles on the sintering behavior of micron-sized SiC powder was investigated. The mixing ratio of Si-SiC composite nanoparticle to micron-sized SiC was optimized to 10 wt%. Vicker's hardness and relative density was increased with increasing sintering temperature and holding time. The relative density and Vicker's hardness was further increased by reaction bonding using additional activated carbon to the mixture of micron-sized SiC and nano-sized Si-SiC. The maximum relative density (97.1%) and Vicker's hardness (31.4 GPa) were recorded at 1800 °C sintering temperature for 1 min holding time, when 0.2 wt% additional activated carbon was added to the mixture of SiC/Si-SiC.

Effect of SiC Nanowhisker on the Microstructure and Mechanical Properties of WC-Ni Cemented Carbide Prepared by Spark Plasma Sintering

PubMed Central

Fu, Zhiqiang; Wang, Chengbiao

2014-01-01

Ultrafine tungsten carbide-nickel (WC-Ni) cemented carbides with varied fractions of silicon carbide (SiC) nanowhisker (0–3.75 wt.%) were fabricated by spark plasma sintering at 1350°C under a uniaxial pressure of 50 MPa with the assistance of vanadium carbide (VC) and tantalum carbide (TaC) as WC grain growth inhibitors. The effects of SiC nanowhisker on the microstructure and mechanical properties of the as-prepared WC-Ni cemented carbides were investigated. X-ray diffraction analysis revealed that during spark plasma sintering (SPS) Ni may react with the applied SiC nanowhisker, forming Ni2Si and graphite. Scanning electron microscopy examination indicated that, with the addition of SiC nanowhisker, the average WC grain size decreased from 400 to 350 nm. However, with the additional fractions of SiC nanowhisker, more and more Si-rich aggregates appeared. With the increase in the added fraction of SiC nanowhisker, the Vickers hardness of the samples initially increased and then decreased, reaching its maximum of about 24.9 GPa when 0.75 wt.% SiC nanowhisker was added. However, the flexural strength of the sample gradually decreased with increasing addition fraction of SiC nanowhisker. PMID:25003143

SiC Nanoparticles Toughened-SiC/MoSi2-SiC Multilayer Functionally Graded Oxidation Protective Coating for Carbon Materials at High Temperatures

NASA Astrophysics Data System (ADS)

Abdollahi, Alireza; Ehsani, Naser; Valefi, Zia; Khalifesoltani, Ali

2017-05-01

A SiC nanoparticle toughened-SiC/MoSi2-SiC functionally graded oxidation protective coating on graphite was prepared by reactive melt infiltration (RMI) at 1773 and 1873 K under argon atmosphere. The phase composition and anti-oxidation behavior of the coatings were investigated. The results show that the coating was composed of MoSi2, α-SiC and β-SiC. By the variations of Gibbs free energy (calculated by HSC Chemistry 6.0 software), it could be suggested that the SiC coating formed at low temperatures by solution-reprecipitation mechanism and at high temperatures by gas-phase reactions and solution-reprecipitation mechanisms simultaneously. SiC nanoparticles could improve the oxidation resistance of SiC/MoSi2-SiC multiphase coating. Addition of SiC nanoparticles increases toughness of the coating and prevents spreading of the oxygen diffusion channels in the coating during the oxidation test. The mass loss and oxidation rate of the SiC nanoparticle toughened-SiC/MoSi2-SiC-coated sample after 10-h oxidation at 1773 K were only 1.76% and 0.32 × 10-2 g/cm3/h, respectively.

Characteristics of Commercial SiC and Synthetic SiC as an Aggregate in Geopolymer Composites

NASA Astrophysics Data System (ADS)

Irfanita, R.; Afifah, K. N.; Asrianti; Subaer

2017-03-01

This main objective of this study is to investigate the effect silicon carbide (SiC) as an aggregate on the mechanical strength and microstructure of the geopolymer composites. The geopolymers binder were produced by using alkaline activation method of metakaolin and cured at 70oC for 2 hours. In this study commercial and synthetic SiC were used as aggregate to produce composite structure. Synthetic SiC was produced from rice husk ash and coconut shell carbon calcined at 750oC for 2 hours. The addition of SiC in geopolymers paste was varied from 0.25g, 0.50g to 0.75g to form geopolymers composites. The chemical compositions and crystallinity level of SiC and the resulting composites were measured by means of Rigaku MiniFlexII X-Ray Diffraction (XRD). The microstructure of SiC and the composites were examined by using Tescan Vega3SB Scanning Electron Microscopy (SEM). The physical and mechanical properties of the samples were determined based on apparent porosity, bulk density, and three bending flexural strength measurements. The results showed that the commercial and synthetic SiC were effectively produced geopolymers composites with different microstructure, physical and mechanical strength.

Seroprevalence of Streptococcal Inhibitor of Complement (SIC) suggests association of streptococcal infection with chronic kidney disease

PubMed Central

2013-01-01

Background Group A streptococcus (GAS) is an etiological agent for the immune mediated sequela post streptococcal glomerulonephritis (PSGN). In some populations PSGN is recognized as a risk factor for chronic kidney disease (CKD) and end-stage renal disease (ESRD). It was found that a significantly greater proportion of subjects with past history of PSGN than without the history exhibited seroreactions to streptococcal antigens called streptococcal inhibitor of complement (SIC) and to distantly related SIC (DRS). These antigens are expressed by major PSGN-associated GAS types. We therefore predicted that in populations such as India, which is endemic for streptococcal diseases and which has high prevalence of CKD and ESRD, greater proportions of CKD and ESRD patients exhibit seroreaction to SIC and DRS than healthy controls. Methods To test this we conducted a SIC and DRS seroprevalence study in subjects from Mumbai area. We recruited 100 CKD, 70 ESRD and 70 healthy individuals. Results Nineteen and 35.7% of CKD and ESRD subjects respectively were SIC antibody-positive, whereas only 7% of healthy cohort was seropositive to SIC. Furthermore, significantly greater proportion of the ESRD patients than the CKD patients is seropositive to SIC (p=0.02; odds ratio 2.37). No association was found between the renal diseases and DRS-antibody-positivity. Conclusions Past infection with SIC-positive GAS is a risk factor for CKD and ESRD in Mumbai population. Furthermore, SIC seropositivity is predictive of poor prognosis of CKD patients. PMID:23642030

Grain-boundary type and distribution in silicon carbide coatings and wafers

NASA Astrophysics Data System (ADS)

Cancino-Trejo, Felix; López-Honorato, Eddie; Walker, Ross C.; Ferrer, Romelia Salomon

2018-03-01

Silicon carbide is the main diffusion barrier against metallic fission products in TRISO (tristructural isotropic) coated fuel particles. The explanation of the accelerated diffusion of silver through SiC has remained a challenge for more than four decades. Although, it is now well accepted that silver diffuse through SiC by grain boundary diffusion, little is known about the characteristics of the grain boundaries in SiC and how these change depending on the type of sample. In this work five different types (coatings and wafers) of SiC produced by chemical vapor deposition were characterized by electron backscatter diffraction (EBSD). The SiC in TRISO particles had a higher concentration of high angle grain boundaries (aprox. 70%) compared to SiC wafers, which ranged between 30 and 60%. Similarly, SiC wafers had a higher concentration of low angle grain boundaries ranging between 15 and 30%, whereas TRISO particles only reached values of around 7%. The same trend remained when comparing the content of coincidence site lattice (CSL) boundaries, since SiC wafers showed a concentration of more than 30%, whilst TRISO particles had contents of around 20%. In all samples the largest fractions of CSL boundaries (3 ≤ Σ ≤ 17) were the Σ3 boundaries. We show that there are important differences between the SiC in TRISO particles and SiC wafers which could explain some of the differences observed in diffusion experiments in the literature.

QM and QM/MM Studies on Excited-State Relaxation Mechanisms of Unnatural Bases in Vacuo and Base Pairs in DNA.

PubMed

Wang, Qian; Xie, Xiao-Ying; Han, Juan; Cui, Ganglong

2017-11-22

Semisynthetic alphabet can potentially increase the genetic information stored in DNA through the formation of unusual base pairs such as d5SICS:dNaM. However, recent experiments show that near-visible-light irradiation on the d5SICS and dNaM chromophores could lead to genetic mutations and damages. Until now, their photophysical mechanisms remain elusive. Herein, we have employed MS-CASPT2//CASSCF and QM(MS-CASPT2//CASSCF)/MM methods to explore the spectroscopic properties and excited-state relaxation mechanisms of d5SICS, dNaM, and d5SICS:dNaM in DNA. We have found that (1) the S 2 state of d5SICS, the S 1 state of dNaM, and the S 2 state of d5SICS:dNaM are initially populated upon near-visible-light irradiation and (2) for d5SICS and d5SICS:dNaM, there are several parallel relaxation pathways to populate the lowest triplet state, but for dNaM, a main relaxation pathway is uncovered. Moreover, we have found that the excited-state relaxation mechanism of d5SICS:dNaM in DNA is similar to that of the isolated d5SICS chromophore. These mechanistic insights contribute to the understanding of photophysics and photochemistry of unusual base pairs and to the design of better semisynthetic genetic alphabet.

Comparative study of SiC- and Si-based photovoltaic inverters

NASA Astrophysics Data System (ADS)

Ando, Yuji; Oku, Takeo; Yasuda, Masashi; Shirahata, Yasuhiro; Ushijima, Kazufumi; Murozono, Mikio

2017-01-01

This article reports comparative study of 150-300 W class photovoltaic inverters (Si inverter, SiC inverter 1, and SiC inverter 2). In these sub-kW class inverters, the ON-resistance was considered to have little influence on the efficiency. The developed SiC inverters, however, have exhibited an approximately 3% higher direct current (DC)-alternating current (AC) conversion efficiency as compared to the Si inverter. Power loss analysis indicated a reduction in the switching and reverse recovery losses of SiC metal-oxide-semiconductor field-effect transistors used for the DC-AC converter is responsible for this improvement. In the SiC inverter 2, an increase of the switching frequency up to 100 kHz achieved a state-of-the-art combination of the weight (1.25 kg) and the volume (1260 cm3) as a 150-250 W class inverter. Even though the increased switching frequency should cause the increase of the switching losses, the SiC inverter 2 exhibited an efficiency comparable to the SiC inverter 1 with a switching frequency of 20 kHz. The power loss analysis also indicated a decreased loss of the DC-DC converter built with SiC Schottky barrier diodes led to the high efficiency for its increased switching frequency. These results clearly indicated feasibility of SiC devices even for sub-kW photovoltaic inverters, which will be available for the applications where compactness and efficiency are of tremendous importance.

Caries experience of some countries and areas expressed by the Significant Caries Index.

PubMed

Nishi, Makiko; Stjernswärd, Jayanthi; Carlsson, Peter; Bratthall, Douglas

2002-08-01

To calculate and present the caries prevalence for some countries/states among 12-year-olds, expressed as Significant Caries Index (SiC Index) and to analyse the relationship between the mean DMFT and the SiC Index for these countries. SiC Index is the mean DMFT of the one-third of a population with the highest caries values. An Excel(R) application for calculating SiC was developed (http://www.whocollab.od.mah.se/expl/siccalculation.xls) and indices were calculated from the data collected for 14 countries and one state from the Country/Area Profile Programme (http://www.whocollab.od.mah.se/index.html). To investigate the provinces of a country that had already reached the proposed SiC Index goal of 3 DMFT among the 12-year-olds, data for 17 counties and a city from Sweden were collected and the respective mean DMFT and SiC Indices calculated. The mean DMFT varied from 1.0 to 8.5 and the SiC Index varied from 2.8 to 13.7 in the national data. Jamaica, Senegal and Sweden were the only three countries that showed SiC Indices that were less than 3 DMFT. The mean DMFT varied from 0.5 to 1.4 and the SiC Index varied from 1.4 to 3.6 in the Swedish county/city data examined. A strong linear relationship between the mean DMFT and the SiC Index was found for the populations presented in this study. The SiC Index is an indicator that reflects the situation among the most caries-exposed individuals and could be included in future population-based oral health surveys together with the mean DMFT.

Highly flexible, nonflammable and free-standing SiC nanowire paper

NASA Astrophysics Data System (ADS)

Chen, Jianjun; Liao, Xin; Wang, Mingming; Liu, Zhaoxiang; Zhang, Judong; Ding, Lijuan; Gao, Li; Li, Ye

2015-03-01

Flexible paper-like semiconductor nanowire materials are expected to meet the criteria for some emerging applications, such as components of flexible solar cells, electrical batteries, supercapacitors, nanocomposites, bendable or wearable electronic or optoelectronic components, and so on. As a new generation of wide-bandgap semiconductors and reinforcements in composites, SiC nanowires have advantages in power electronic applications and nanofiber reinforced ceramic composites. Herein, free-standing SiC nanowire paper consisting of ultralong single-crystalline SiC nanowires was prepared through a facile vacuum filtration approach. The ultralong SiC nanowires were synthesized by a sol-gel and carbothermal reduction method. The flexible paper composed of SiC nanowires is ~100 nm in width and up to several hundreds of micrometers in length. The nanowires are intertwisted with each other to form a three-dimensional network-like structure. SiC nanowire paper exhibits high flexibility and strong mechanical stability. The refractory performance and thermal stability of SiC nanowire paper were also investigated. The paper not only exhibits excellent nonflammability in fire, but also remains well preserved without visible damage when it is heated in an electric oven at a high temperature (1000 °C) for 3 h. With its high flexibility, excellent nonflammability, and high thermal stability, the free-standing SiC nanowire paper may have the potential to improve the ablation resistance of high temperature ceramic composites.Flexible paper-like semiconductor nanowire materials are expected to meet the criteria for some emerging applications, such as components of flexible solar cells, electrical batteries, supercapacitors, nanocomposites, bendable or wearable electronic or optoelectronic components, and so on. As a new generation of wide-bandgap semiconductors and reinforcements in composites, SiC nanowires have advantages in power electronic applications and nanofiber reinforced ceramic composites. Herein, free-standing SiC nanowire paper consisting of ultralong single-crystalline SiC nanowires was prepared through a facile vacuum filtration approach. The ultralong SiC nanowires were synthesized by a sol-gel and carbothermal reduction method. The flexible paper composed of SiC nanowires is ~100 nm in width and up to several hundreds of micrometers in length. The nanowires are intertwisted with each other to form a three-dimensional network-like structure. SiC nanowire paper exhibits high flexibility and strong mechanical stability. The refractory performance and thermal stability of SiC nanowire paper were also investigated. The paper not only exhibits excellent nonflammability in fire, but also remains well preserved without visible damage when it is heated in an electric oven at a high temperature (1000 °C) for 3 h. With its high flexibility, excellent nonflammability, and high thermal stability, the free-standing SiC nanowire paper may have the potential to improve the ablation resistance of high temperature ceramic composites. Electronic supplementary information (ESI) available. See DOI: 10.1039/c5nr00776c

Paralinear Oxidation of CVD SiC in Water Vapor

NASA Technical Reports Server (NTRS)

Opila, Elizabeth J.; Hann, Raiford E., Jr.

1997-01-01

The oxidation kinetics of CVD SiC were monitored by thermogravimetric analysis (TGA) in a 50% H2O/50% O2 gas mixture flowing at 4.4 cm/s for temperatures between 1200 and 1400 C. Paralinear weight change kinetics were observed as the water vapor oxidized the SiC and simultaneously volatilized the silica scale. The long-term degradation rate of SiC is determined by the volatility of the silica scale. Rapid SiC surface recession rates were estimated from these data for actual aircraft engine combustor conditions.

Silicon carbide as an oxidation-resistant high-temperature material. 1: Oxidation and heat corrosion behavior

NASA Technical Reports Server (NTRS)

Schlichting, J.

1981-01-01

The oxidation and corrosion behavior of SiC (in the form of a SiC powder) and hot-pressed and reaction-bound material were studied. The excellent stability of SiC in an oxidizing atmosphere is due to the development of protective SiO2 coatings. Any changes in these protective layers (e.g., due to impurities, reaction with corrosive media, high porosity of SiC, etc.) lead in most cases to increased rates of oxidation and thus restrict the field of SiC application.

SiC Protective Coating for Photovoltaic Retinal Prostheses

PubMed Central

Lei, Xin; Kane, Sheryl; Cogan, Stuart; Lorach, Henri; Galambos, Ludwig; Huie, Philip; Mathieson, Keith; Kamins, Theodore; Harris, James; Palanker, Daniel

2016-01-01

Objective To evaluate PECVD SiC as a protective coating for retinal prostheses and other implantable devices, and to study their failure mechanisms in vivo. Approach Retinal prostheses were implanted in rats subretinally for up to 1 year. Degradation of implants was characterized by optical and scanning electron microscopy. Dissolution rates of SiC, SiNx and thermal SiO2 were measured in accelerated soaking tests in saline at 87°C. Defects in SiC films were revealed and analyzed by selectively removing the materials underneath those defects. Main results At 87°C SiNx dissolved at 18.3±0.3nm/day, while SiO2 grown at high temperature (1000°C) dissolved at 1.04±0.08A/day. SiC films demonstrated the best stability, with no quantifiable change after 112 days. Defects in thin SiC films appeared primarily over complicated topography and rough surfaces. Significance SiC coatings demonstrating no erosion in accelerated aging test for 112 days at 87°C, equivalent to about 10 years in vivo, can offer effective protection of the implants. Photovoltaic retinal prostheses with PECVD SiC coatings exhibited effective protection from erosion during the 4-month follow-up in vivo. The optimal thickness of SiC layers is about 560nm, as defined by anti-reflective properties and by sufficient coverage to eliminate defects. PMID:27323882

Sintering Behavior of Spark Plasma Sintered SiC with Si-SiC Composite Nanoparticles Prepared by Thermal DC Plasma Process.

PubMed

Yu, Yeon-Tae; Naik, Gautam Kumar; Lim, Young-Bin; Yoon, Jeong-Mo

2017-11-25

The Si-coated SiC (Si-SiC) composite nanoparticle was prepared by non-transferred arc thermal plasma processing of solid-state synthesized SiC powder and was used as a sintering additive for SiC ceramic formation. Sintered SiC pellet was prepared by spark plasma sintering (SPS) process, and the effect of nano-sized Si-SiC composite particles on the sintering behavior of micron-sized SiC powder was investigated. The mixing ratio of Si-SiC composite nanoparticle to micron-sized SiC was optimized to 10 wt%. Vicker's hardness and relative density was increased with increasing sintering temperature and holding time. The relative density and Vicker's hardness was further increased by reaction bonding using additional activated carbon to the mixture of micron-sized SiC and nano-sized Si-SiC. The maximum relative density (97.1%) and Vicker's hardness (31.4 GPa) were recorded at 1800 °C sintering temperature for 1 min holding time, when 0.2 wt% additional activated carbon was added to the mixture of SiC/Si-SiC.

Structural, thermal, dielectric spectroscopic and AC impedance properties of SiC nanoparticles doped PVK/PVC blend

NASA Astrophysics Data System (ADS)

Alghunaim, Naziha Suliman

2018-06-01

Nanocomposite films based on poly (N-vinylcarbazole)/polyvinylchloride (PVK/PVC) blend doped with different concentrations of Silicon Carbide (SiC) nanoparticles have been prepared. The X-ray diffraction, Ultra violet-visible spectroscopy, thermogravimetric analysis and electrical spectroscopic has been used to characterize these nanocomposites. The X-ray analysis confirms the semi-crystalline nature of the films. The intensity of the main X-ray peak is decreased due to the interaction between the PVK/PVC and SiC. The main SiC peaks are absent due to complete dissolution of SiC in polymeric matrices. The UV-Vis spectra indicated that the band gap optical energy is affected by adding SiC nanoparticles because the charges transfer complexes between PVK/PVC with amount of SiC. The thermal stability is improved and the estimated values of ε‧ and ε″ are increased with increasing for SiC content due to the free charge carriers which in turn increase the ionic conductivity of the doped samples. The plots of tan δ with frequency are studied. A single peak from the plot between tan δ and Log (f) is appeared and shifted towards the higher frequency confirmed the presence of relaxing dipoles moment.

Epitaxial Growth of beta-Silicon Carbide (SiC) on a Compliant Substrate via Chemical Vapor Deposition (CVD)

NASA Technical Reports Server (NTRS)

Mitchell, Sharanda L.

1996-01-01

Many lattice defects have been attributed to the lattice mismatch and the difference in the thermal coefficient of expansion between SiC and silicon (Si). Stacking faults, twins and antiphase boundaries are some of the lattice defects found in these SiC films. These defects may be a partial cause of the disappointing performance reported for the prototype devices fabricated from beta-SiC films. The objective of this research is to relieve some of the thermal stress due to lattice mismatch when SiC is epitaxially grown on Si. The compliant substrate is a silicon membrane 2-4 microns thick. The CVD process includes the buffer layer which is grown at 1360 C followed by a very thin epitaxial growth of SiC. Then the temperature is raised to 1500 C for the subsequent growth of SiC. Since silicon melts at 1415 C, the SiC will be grown on molten Silicon which is absorbed by a porous graphite susceptor eliminating the SiC/Si interface. We suspect that this buffer layer will yield less stressed material to help in the epitaxial growth of SiC.

Bulk Thermoelectric Materials Reinforced with SiC Whiskers

NASA Astrophysics Data System (ADS)

Akao, Takahiro; Fujiwara, Yuya; Tarui, Yuki; Onda, Tetsuhiko; Chen, Zhong-Chun

2014-06-01

SiC whiskers have been incorporated into Zn4Sb3 compound as reinforcements to overcome its extremely brittle nature. The bulk samples were prepared by either hot-extrusion or hot-pressing techniques. The obtained products containing 1 vol.% to 5 vol.% SiC whiskers were confirmed to exhibit sound appearance, high density, and fine-grained microstructure. Mechanical properties such as the hardness and fracture resistance were improved by the addition of SiC whiskers, as a result of dispersion strengthening and microstructural refinement induced by a pinning effect. Furthermore, crack deflection and/or bridging/pullout mechanisms are invoked by the whiskers. Regarding the thermoelectric properties, the Seebeck coefficient and electrical resistivity values comparable to those of the pure compound are retained over the entire range of added whisker amount. However, the thermal conductivity becomes large with increasing amount of SiC whiskers because of the much higher conductivity of SiC relative to the Zn4Sb3 matrix. This results in a remarkable degradation of the dimensionless figure of merit in the samples with addition of SiC whiskers. Therefore, the optimum amount of SiC whiskers in the Zn4Sb3 matrix should be determined by balancing the mechanical properties and thermoelectric performance.

Packaging Technologies for 500C SiC Electronics and Sensors

NASA Technical Reports Server (NTRS)

Chen, Liang-Yu

2013-01-01

Various SiC electronics and sensors are currently under development for applications in 500C high temperature environments such as hot sections of aerospace engines and the surface of Venus. In order to conduct long-term test and eventually commercialize these SiC devices, compatible packaging technologies for the SiC electronics and sensors are required. This presentation reviews packaging technologies developed for 500C SiC electronics and sensors to address both component and subsystem level packaging needs for high temperature environments. The packaging system for high temperature SiC electronics includes ceramic chip-level packages, ceramic printed circuit boards (PCBs), and edge-connectors. High temperature durable die-attach and precious metal wire-bonding are used in the chip-level packaging process. A high temperature sensor package is specifically designed to address high temperature micro-fabricated capacitive pressure sensors for high differential pressure environments. This presentation describes development of these electronics and sensor packaging technologies, including some testing results of SiC electronics and capacitive pressure sensors using these packaging technologies.

In-situ synchrotron x-ray study of MgB2 formation when doped by SiC

NASA Astrophysics Data System (ADS)

Abrahamsen, A. B.; Grivel, J.-C.; Andersen, N. H.; Herrmann, M.; Häßler, W.; Birajdar, B.; Eibl, O.; Saksl, K.

2008-02-01

We have studied the evolution of the reaction xMg + 2B + ySiC → zMg1-p(B1-qCq)2 + yMg2Si in samples of 1, 2, 5 and 10 wt% SiC doping. We found a coincident formation of MgB2 and Mg2Si, whereas the crystalline part of the SiC nano particles is not reacting at all. Evidence for incorporation of carbon into the MgB2 phase was established from the decrease of the a-axis lattice parameter upon increasing SiC doping. An estimate of the MgB2 lower limit grain size was found to decrease from L100 = 795 Å and L002 = 337 Å at 1 wt% SiC to L100 = 227 Å and L002= 60 Å at 10 wt% SiC. Thus superconductivity might be suppressed at 10 wt% SiC doping due to the grain size approaching the coherence length.

Super-Lensing and Sub-Wavelength Antennas in Mid-IR Using Silicon Carbide

NASA Astrophysics Data System (ADS)

Shvets, Gennady; Korobkin, Dmitriy; Urzhumov, Yaroslav A.; Zorman, Christian

2006-03-01

Extraordinary properties of SiC in mid-infrared (negative dielectric permittivity and small losses) make it an ideal building block for making negative index meta-materials in that important part of the electromagnetic spectrum. We report on a series of experiments demonstrating that thin films of SiC can be used as a ``perfect'' near-field lens. We have theoretically designed and experimentally implemented a super-lens ion mid-IR using SiC. We also report excitation of electrostatic resonances of two structures based on a sub-micron film of crystalline silicon carbide: (a) nano-holes drilled in the free-standing SiC membrane, and (b) metallic nano-posts evaporated on the SiC membrane. Applications of nano-hole resonances to excitation of magnetic moments in nano-structured SiC and development of negative index materials will be discussed, as will be the prospects of using nano-structured SiC films for laser processing of materials on a nanoscale.

Molecular dynamics simulation of salt rejection through silicon carbide nanotubes as a nanostructure membrane.

PubMed

Khataee, Alireza; Bayat, Golchehreh; Azamat, Jafar

2017-01-01

Salt rejection phenomenon was investigated using armchair silicon carbide (SiC) nanotubes under applied electric fields. The systems included the (7,7) and (8,8) SiC nanotubes surrounded by silicon nitride membrane immersed in a 0.4mol/L aqueous solution of sodium chloride. Results of molecular dynamics (MD) simulations for selective separation of Na + and Cl - ions showed that the (7,7) SiC nanotube is suitable for separation of cations and the (8,8) SiC nanotube can be used for separating anions. The water desalination by SiC nanotubes was demonstrated by potential of mean force for Na + and Cl - ions in each SiC nanotube. Furthermore, the ionic current, ion residence time, and the radial distribution functions of species were measured to evaluate the properties of the system. Based on the results of this research, the studied SiC nanotubes can be recommended as a nanostructure model for water desalination. Copyright © 2016 Elsevier Inc. All rights reserved.

Characterization of a Complement-Binding Protein, DRS, from Strains of Streptococcus pyogenes Containing the emm12 and emm55 Genes

PubMed Central

Binks, Michael; Sriprakash, K. S.

2004-01-01

An extracellular protein of Streptococcus pyogenes, streptococcal inhibitor of complement (SIC), and its variant, called DRS (distantly related to SIC), are expressed by some S. pyogenes strains. SIC from type 1 (M1) isolates of S. pyogenes interferes with complement-mediated cell lysis, reportedly via its interaction with complement proteins. In this study we demonstrate that S. pyogenes strains carrying emm12 and emm55 (the genes for the M12 and M55 proteins, respectively) express and secrete DRS. This protein, like SIC, binds to the C6 and C7 complement proteins, and competition enzyme-linked immunosorbent assay experiments demonstrate that DRS competes with SIC for C6 and C7 binding. Similarly, SIC competes with DRS for binding to the complement proteins. Despite this, the recombinant DRS preparation showed no significant effect on complement function, as determined by lysis of sensitized sheep erythrocytes. Furthermore, the presence of DRS is not inhibitory to SIC activity. PMID:15213143

Characterization of a complement-binding protein, DRS, from strains of Streptococcus pyogenes containing the emm12 and emm55 genes.

PubMed

Binks, Michael; Sriprakash, K S

2004-07-01

An extracellular protein of Streptococcus pyogenes, streptococcal inhibitor of complement (SIC), and its variant, called DRS (distantly related to SIC), are expressed by some S. pyogenes strains. SIC from type 1 (M1) isolates of S. pyogenes interferes with complement-mediated cell lysis, reportedly via its interaction with complement proteins. In this study we demonstrate that S. pyogenes strains carrying emm12 and emm55 (the genes for the M12 and M55 proteins, respectively) express and secrete DRS. This protein, like SIC, binds to the C6 and C7 complement proteins, and competition enzyme-linked immunosorbent assay experiments demonstrate that DRS competes with SIC for C6 and C7 binding. Similarly, SIC competes with DRS for binding to the complement proteins. Despite this, the recombinant DRS preparation showed no significant effect on complement function, as determined by lysis of sensitized sheep erythrocytes. Furthermore, the presence of DRS is not inhibitory to SIC activity.

The improvement of wave-absorbing ability of silicon carbide fibers by depositing boron nitride coating

NASA Astrophysics Data System (ADS)

Ye, Fang; Zhang, Litong; Yin, Xiaowei; Liu, Yongsheng; Cheng, Laifei

2013-04-01

This work investigated electromagnetic wave (EMW) absorption and mechanical properties of silicon carbide (SiC) fibers with and without boron nitride (BN) coating by chemical vapor infiltration (CVI). The dielectric property and EM shielding effectiveness of SiC fiber bundles before and after being coated by BN were measured by wave guide method. The EM reflection coefficient of SiC fiber laminates with and without BN coating was determined by model calculation and NRL-arc method, respectively. Tensile properties of SiC fiber bundles with and without BN coating were tested at room temperature. Results show that SiC fibers with BN coating had a great improvement of EMW absorbing property because the composites achieved the impedance matching. BN with the low permittivity and dielectric loss contributed to the enhancive introduction and reduced reflection of EMW. The tensile strength and Weibull modulus of SiC fiber bundles coated by BN increased owing to the decrease of defects in SiC fibers and the protection of coating during loading.

Deformation and fracture of single-crystal and sintered polycrystalline silicon carbide produced by cavitation

NASA Technical Reports Server (NTRS)

Miyoshi, Kazuhisa; Hattori, Shuji; Okada, Tsunenori; Buckley, Donald H.

1987-01-01

An investigation was conducted to examine the deformation and fracture behavior of single-crystal and sintered polycrystalline SiC surfaces exposed to cavitation. Cavitation erosion experiments were conducted in distilled water at 25 C by using a magnetostrictive oscillator in close proximity (1 mm) to the surface of SiC. The horn frequency was 20 kHz, and the double amplitude of the vibrating disk was 50 microns. The results of the investigation indicate that the SiC (0001) surface could be deformed in a plastic manner during cavitation. Dislocation etch pits were formed when the surface was chemically etched. The number of defects, including dislocations in the SiC (0001) surface, increased with increasing exposure time to cavitation. The presence of intrinsic defects such as voids in the surficial layers of the sintered polycrystalline SiC determined the zones at which fractured grains and fracture pits (pores) were generated. Single-crystal SiC had superior erosion resistance to that of sintered polycrystalline SiC.

Deformation and fracture of single-crystal and sintered polycrystalline silicon carbide produced by cavitation

NASA Technical Reports Server (NTRS)

Miyoshi, Kazuhisa; Hattori, Shuji; Okada, Tsunenori; Buckley, Donald H.

1989-01-01

An investigation was conducted to examine the deformation and fracture behavior of single-crystal and sintered polycrystalline SiC surfaces exposed to cavitation. Cavitation erosion experiments were conducted in distilled water at 25 C by using a magnetostrictive oscillator in close proximity (1 mm) to the surface of SiC. The horn frequency was 20 kHz, and the double amplitude of the vibrating disk was 50 microns. The results of the investigation indicate that the SiC (0001) surface could be deformed in a plastic manner during cavitation. Dislocation etch pits were formed when the surface was chemically etched. The number of defects, including dislocations in SiC (0001) surface, increased with increasing exposure time to cavitation. The presence of intrinsic defects such as voids in the surficial layers of the sintered polycrystalline SiC determined the zones at which fractured grains and fracture pits (pores) were generated. Single-crystal SiC had superior erosion resistance to that of sintered polycrystalline SiC.

Mixing Silicate Melts with High Viscosity Contrast by Chaotic Dynamics: Results from a New Experimental Device

NASA Astrophysics Data System (ADS)

de Campos, Cristina; Perugini, Diego; Ertel-Ingrisch, Werner; Dingwell, Donald B.; Poli, Giampiero

2010-05-01

A new experimental device has been developed to perform chaotic mixing between high viscosity melts under controlled fluid-dynamic conditions. The apparatus is based on the Journal Bearing System (JBS). It consists of an outer cylinder hosting the melts of interest and an inner cylinder, which is eccentrically located. Both cylinders can be independently moved to generate chaotic streamlines in the mixing system. Two experiments were performed using as end-members different proportions of a peralkaline haplogranite and a mafic melt, corresponding to the 1 atm eutectic composition in the An-Di binary system. The two melts were stirred together in the JBS for ca. two hours, at 1,400° C and under laminar fluid dynamic condition (Re of the order of 10-7). The viscosity ratio between the two melts, at the beginning of the experiment, was of the order of 103. Optical analyses of experimental samples revealed, at short length scale (of the order of μm), a complex pattern of mixed structures. These consisted of an intimate distribution of filaments; a complex inter-fingering of the two melts. Such features are typically observed in rocks thought to be produced by magma mixing processes. Stretching and folding dynamics between the melts induced chaotic flow fields and generated wide compositional interfaces. In this way, chemical diffusion processes become more efficient, producing melts with highly heterogeneous compositions. A remarkable modulation of compositional fields has been obtained by performing short time-scale experiments and using melts with a high viscosity ratio. This indicates that chaotic mixing of magmas can be a very efficient process in modulating compositional variability in igneous systems, especially under high viscosity ratios and laminar fluid-dynamic regimes. Our experimental device may replicate magma mixing features, observed in natural rocks, and therefore open new frontiers in the study of this important petrologic and volcanological process.

Amorphization resistance of nano-engineered SiC under heavy ion irradiation

NASA Astrophysics Data System (ADS)

Imada, Kenta; Ishimaru, Manabu; Xue, Haizhou; Zhang, Yanwen; Shannon, Steven C.; Weber, William J.

2016-09-01

Silicon carbide (SiC) with a high-density of planar defects (hereafter, 'nano-engineered SiC') and epitaxially-grown single-crystalline 3C-SiC were simultaneously irradiated with Au ions at room temperature, in order to compare their relative resistance to radiation-induced amorphization. It was found that the local threshold dose for amorphization is comparable for both samples under 2 MeV Au ion irradiation; whereas, nano-engineered SiC exhibits slightly greater radiation tolerance than single crystalline SiC under 10 MeV Au irradiation. Under 10 MeV Au ion irradiation, the dose for amorphization increased by about a factor of two in both nano-engineered and single crystal SiC due to the local increase in electronic energy loss that enhanced dynamic recovery.

Measured Attenuation of Coplanar Waveguide on 6H, p-type SiC and High Purity Semi-Insulating 4H SiC through 800 K

NASA Technical Reports Server (NTRS)

Ponchak, George E.; Schwartz, Zachary D.; Alterovitz, Samuel A.; Downey, Alan N.

2004-01-01

Wireless sensors for high temperature applications such as oil drilling and mining, automobiles, and jet engine performance monitoring require circuits built on wide bandgap semiconductors. In this paper, the characteristics of microwave transmission lines on 4H-High Purity Semi-Insulating SiC and 6H, p-type SiC is presented as a function of temperature and frequency. It is shown that the attenuation of 6H, p-type substrates is too high for microwave circuits, large leakage current will flow through the substrate, and that unusual attenuation characteristics are due to trapping in the SiC. The 4H-HPSI SiC is shown to have low attenuation and leakage currents over the entire temperature range.

Research on Antiphonic Characteristic of AlMg10-SiC Ultralight Composite Materials

NASA Astrophysics Data System (ADS)

Rusu, O.; Rusu, I.

2018-06-01

The paper presents the results on the absorption sound testing of an ultralight cellular composite material AlMg10-SiC, obtained by sputtering method. We have chosen this type of material because its microstructure generally comprises open cells (and relatively few semi-open cells), evenly distributed in the material, a structure that, at least theoretically, has a favorable behavior in relation to sound damping. The tests were performed on three types of samples, namely P11 – AlMg10 – 5%SiC, P12 – AlMg10 – 10%SiC şi P13 – AlMg10 – 15%SiC. The 15% SiC (P13) cellular material sample has the best sound-absorbing characteristics and the highest practical absorption degree.

Corrosion pitting of SiC by molten salts

NASA Technical Reports Server (NTRS)

Jacobson, N. S.; Smialek, J. L.

1986-01-01

The corrosion of SiC by thin films of Na2CO3 and Na2SO4 at 1000 C is characterized by a severe pitting attack of the SiC substrate. A range of different Si and SiC substrates were examined to isolate the factors critical to pitting. Two types of pitting attack are identified: attack at structural discontinuities and a crater-like attack. The crater-like pits are correlated with bubble formation during oxidation of the SiC. It appears that bubbles create unprotected regions, which are susceptible to enhanced attack and, hence, pit formation.

Logic Gates Made of N-Channel JFETs and Epitaxial Resistors

NASA Technical Reports Server (NTRS)

Krasowski, Michael J.

2008-01-01

Prototype logic gates made of n-channel junction field-effect transistors (JFETs) and epitaxial resistors have been demonstrated, with a view toward eventual implementation of digital logic devices and systems in silicon carbide (SiC) integrated circuits (ICs). This development is intended to exploit the inherent ability of SiC electronic devices to function at temperatures from 300 to somewhat above 500 C and withstand large doses of ionizing radiation. SiC-based digital logic devices and systems could enable operation of sensors and robots in nuclear reactors, in jet engines, near hydrothermal vents, and in other environments that are so hot or radioactive as to cause conventional silicon electronic devices to fail. At present, current needs for digital processing at high temperatures exceed SiC integrated circuit production capabilities, which do not allow for highly integrated circuits. Only single to small number component production of depletion mode n-channel JFETs and epitaxial resistors on a single substrate is possible. As a consequence, the fine matching of components is impossible, resulting in rather large direct-current parameter distributions within a group of transistors typically spanning multiples of 5 to 10. Add to this the lack of p-channel devices to complement the n-channel FETs, the lack of precise dropping diodes, and the lack of enhancement mode devices at these elevated temperatures and the use of conventional direct coupled and buffered direct coupled logic gate design techniques is impossible. The presented logic gate design is tolerant of device parameter distributions and is not hampered by the lack of complementary devices or dropping diodes. In addition to n-channel JFETs, these gates include level-shifting and load resistors (see figure). Instead of relying on precise matching of parameters among individual JFETS, these designs rely on choosing the values of these resistors and of supply potentials so as to make the circuits perform the desired functions throughout the ranges over which the parameters of the JFETs are distributed. The supply rails V(sub dd) and V(sub ss) and the resistors R are chosen as functions of the distribution of direct-current operating parameters of the group of transistors used.

Interface and interaction of graphene layers on SiC(0001[combining macron]) covered with TiC(111) intercalation.

PubMed

Wang, Lu; Wang, Qiang; Huang, Jianmei; Li, Wei-Qi; Chen, Guang-Hui; Yang, Yanhui

2017-10-11

It is important to understand the interface and interaction between the graphene layer, titanium carbide [TiC(111)] interlayer, and silicon carbide [SiC(0001[combining macron])] substrates in epitaxial growth of graphene on silicon carbide (SiC) substrates. In this study, the fully relaxed interfaces which consist of up to three layers of TiC(111) coatings on the SiC(0001[combining macron]) as well as the graphene layers interactions with these TiC(111)/SiC(0001[combining macron]) were systematically studied using the density functional theory-D2 (DFT-D2) method. The results showed that the two layers of TiC(111) coating with the C/C-terminated interfaces were thermodynamically more favorable than one or three layers of TiC(111) on the SiC(0001[combining macron]). Furthermore, the bonding of the Ti-hollow-site stacked interfaces would be a stronger link than that of the Ti-Fcc-site stacked interfaces. However, the formation of the C/Ti/C and Ti/C interfaces implied that the first upper carbon layer can be formed on TiC(111)/SiC(0001[combining macron]) using the decomposition of the weaker Ti-C and C-Si interfacial bonds. When growing graphene layers on these TiC(111)/SiC(0001[combining macron]) substrates, the results showed that the interaction energy depended not only on the thickness of the TiC(111) interlayer, but also on the number of graphene layers. Bilayer graphene on the two layer thick TiC(111)/SiC(0001[combining macron]) was thermodynamically more favorable than a monolayer or trilayer graphene on these TiC(111)/SiC(0001[combining macron]) substrates. The adsorption energies of the bottom graphene layers with the TiC(111)/SiC(0001[combining macron]) substrates increased with the decrease of the interface vertical distance. The interaction energies between the bottom, second and third layers of graphene on the TiC(111)/SiC(0001[combining macron]) were significantly higher than that of the freestanding graphene layers. All of these findings provided insight into the growth of epitaxial graphene on TiC(111)/SiC(0001[combining macron]) substrates and the design of graphene/TiC/SiC-based electronic devices.

Effects of SiC nanoparticles orally administered in a rat model: Biodistribution, toxicity and elemental composition changes in feces and organs

DOE Office of Scientific and Technical Information (OSTI.GOV)

Lozano, Omar, E-mail: omar.lozanogarcia@fundp.ac.be; Research Centre for the Physics of Matter and Radiation; Laloy, Julie

2012-10-15

Background: Silicon carbide (SiC) presents noteworthy properties as a material such as high hardness, thermal stability, and photoluminescent properties as a nanocrystal. However, there are very few studies in regard to the toxicological potential of SiC NPs. Objectives: To study the toxicity and biodistribution of silicon carbide (SiC) nanoparticles in an in vivo rat model after acute (24 h) and subacute (28 days) oral administrations. The acute doses were 0.5, 5, 50, 300 and 600 mg·kg{sup −1}, while the subacute doses were 0.5 and 50 mg·kg{sup −1}. Results: SiC biodistribution and elemental composition of feces and organs (liver, kidneys, andmore » spleen) have been studied by Particle-Induced X-ray Emission (PIXE). SiC and other elements in feces excretion increased by the end of the subacute assessment. SiC did not accumulate in organs but some elemental composition modifications were observed after the acute assessment. Histopathological sections from organs (stomach, intestines, liver, and kidneys) indicate the absence of damage at all applied doses, in both assessments. A decrease in the concentration of urea in blood was found in the 50 mg·kg{sup −1} group from the subacute assessment. No alterations in the urine parameters (sodium, potassium, osmolarity) were found. Conclusion: This is the first study that assesses the toxicity, biodistribution, and composition changes in feces and organs of SiC nanoparticles in an in vivo rat model. SiC was excreted mostly in feces and low traces were retrieved in urine, indicating that SiC can cross the intestinal barrier. No sign of toxicity was however found after oral administration. -- Highlights: ► SiC nanoparticles were orally administered to rats in acute and subacute doses. ► SiC was found in low traces in urine. It is mostly excreted in feces within 5 days. ► SiC excretion rate, feces and organ elemental composition change with time. ► No morphological alteration were found on GI tract, liver, kidneys, or spleen. ► Urea increased in blood in the subacute assessment. No change in urine properties.« less

Coordinated EDX and micro-Raman analysis of presolar silicon carbide: A novel, nondestructive method to identify rare subgroup SiC

NASA Astrophysics Data System (ADS)

Liu, Nan; Steele, Andrew; Nittler, Larry R.; Stroud, Rhonda M.; De Gregorio, Bradley T.; Alexander, Conel M. O'D.; Wang, Jianhua

2017-12-01

We report the development of a novel method to nondestructively identify presolar silicon carbide (SiC) grains with high initial 26Al/27Al ratios (>0.01) and extreme 13C-enrichments (12C/13C ≤ 10) by backscattered electron-energy dispersive X-ray (EDX) and micro-Raman analyses. Our survey of a large number of presolar SiC demonstrates that (1) 80% of core-collapse supernova and putative nova SiC can be identified by quantitative EDX and Raman analyses with >70% confidence; (2) 90% of presolar SiC are predominantly 3C-SiC, as indicated by their Raman transverse optical (TO) peak position and width; (3) presolar 3C-SiC with 12C/13C ≤ 10 show lower Raman TO phonon frequencies compared to mainstream 3C-SiC. The downward shifted phonon frequencies of the 13C-enriched SiC with concomitant peak broadening are a natural consequence of isotope substitution. 13C-enriched SiC can therefore be identified by micro-Raman analysis; (4) larger shifts in the Raman TO peak position and width indicate deviations from the ideal 3C structure, including rare polytypes. Coordinated transmission electron microscopy analysis of one X and one mainstream SiC grain found them to be of 6H and 15R polytypes, respectively; (5) our correlated Raman and NanoSIMS study of mainstream SiC shows that high nitrogen content is a dominant factor in causing mainstream SiC Raman peak broadening without significant peak shifts; and (6) we found that the SiC condensation conditions in different stellar sites are astonishingly similar, except for X grains, which often condensed more rapidly and at higher atmospheric densities and temperatures, resulting in a higher fraction of grains with much downward shifted and broadened Raman TO peaks.

Modeling of displacement damage in silicon carbide detectors resulting from neutron irradiation

NASA Astrophysics Data System (ADS)

Khorsandi, Behrooz

There is considerable interest in developing a power monitor system for Generation IV reactors (for instance GT-MHR). A new type of semiconductor radiation detector is under development based on silicon carbide (SiC) technology for these reactors. SiC has been selected as the semiconductor material due to its superior thermal-electrical-neutronic properties. Compared to Si, SiC is a radiation hard material; however, like Si, the properties of SiC are changed by irradiation by a large fluence of energetic neutrons, as a consequence of displacement damage, and that irradiation decreases the life-time of detectors. Predictions of displacement damage and the concomitant radiation effects are important for deciding where the SiC detectors should be placed. The purpose of this dissertation is to develop computer simulation methods to estimate the number of various defects created in SiC detectors, because of neutron irradiation, and predict at what positions of a reactor, SiC detectors could monitor the neutron flux with high reliability. The simulation modeling includes several well-known---and commercial---codes (MCNP5, TRIM, MARLOWE and VASP), and two kinetic Monte Carlo codes written by the author (MCASIC and DCRSIC). My dissertation will highlight the displacement damage that may happen in SiC detectors located in available positions in the OSURR, GT-MHR and IRIS. As extra modeling output data, the count rates of SiC for the specified locations are calculated. A conclusion of this thesis is SiC detectors that are placed in the thermal neutron region of a graphite moderator-reflector reactor have a chance to survive at least one reactor refueling cycle, while their count rates are acceptably high.

Detection and analysis of particles with failed SiC in AGR-1 fuel compacts

DOE PAGES

Hunn, John D.; Baldwin, Charles A.; Gerczak, Tyler J.; ...

2016-04-06

As the primary barrier to release of radioactive isotopes emitted from the fuel kernel, retention performance of the SiC layer in tristructural isotropic (TRISO) coated particles is critical to the overall safety of reactors that utilize this fuel design. Most isotopes are well-retained by intact SiC coatings, so pathways through this layer due to cracking, structural defects, or chemical attack can significantly contribute to radioisotope release. In the US TRISO fuel development effort, release of 134Cs and 137Cs are used to detect SiC failure during fuel compact irradiation and safety testing because the amount of cesium released by a compactmore » containing one particle with failed SiC is typically ten or more times higher than that released by compacts without failed SiC. Compacts with particles that released cesium during irradiation testing or post-irradiation safety testing at 1600–1800 °C were identified, and individual particles with abnormally low cesium retention were sorted out with the Oak Ridge National Laboratory (ORNL) Irradiated Microsphere Gamma Analyzer (IMGA). X-ray tomography was used for three-dimensional imaging of the internal coating structure to locate low-density pathways through the SiC layer and guide subsequent materialography by optical and scanning electron microscopy. In addition, all three cesium-releasing particles recovered from as-irradiated compacts showed a region where the inner pyrocarbon (IPyC) had cracked due to radiation-induced dimensional changes in the shrinking buffer and the exposed SiC had experienced concentrated attack by palladium; SiC failures observed in particles subjected to safety testing were related to either fabrication defects or showed extensive Pd corrosion through the SiC where it had been exposed by similar IPyC cracking.« less

New constructions of approximately SIC-POVMs via difference sets

NASA Astrophysics Data System (ADS)

Luo, Gaojun; Cao, Xiwang

2018-04-01

In quantum information theory, symmetric informationally complete positive operator-valued measures (SIC-POVMs) are related to quantum state tomography (Caves et al., 2004), quantum cryptography (Fuchs and Sasaki, 2003) [1], and foundational studies (Fuchs, 2002) [2]. However, constructing SIC-POVMs is notoriously hard. Although some SIC-POVMs have been constructed numerically, there does not exist an infinite class of them. In this paper, we propose two constructions of approximately SIC-POVMs, where a small deviation from uniformity of the inner products is allowed. We employ difference sets to present the first construction and the dimension of the approximately SIC-POVMs is q + 1, where q is a prime power. Notably, the dimension of this framework is new. The second construction is based on partial geometric difference sets and works whenever the dimension of the framework is a prime power.

Influence of Ni-P Coated SiC and Laser Scan Speed on the Microstructure and Mechanical Properties of IN625 Metal Matrix Composites

NASA Astrophysics Data System (ADS)

Sateesh, N. H.; Kumar, G. C. Mohan; Krishna, Prasad

2015-12-01

Nickel based Inconel-625 (IN625) metal matrix composites (MMCs) were prepared using pre-heated nickel phosphide (Ni-P) coated silicon carbide (SiC) reinforcement particles by Direct Metal Laser Sintering (DMLS) additive manufacturing process under inert nitrogen atmosphere to obtain interface influences on MMCs. The distribution of SiC particles and microstructures were characterized using optical and scanning electron micrographs, and the mechanical behaviours were thoroughly examined. The results clearly reveal that the interface integrity between the SiC particles and the IN625 matrix, the mixed powders flowability, the SiC ceramic particles and laser beam interaction, and the hardness, and tensile characteristics of the DMLS processed MMCs were improved effectively by the use of Ni-P coated SiC particles.

Study of silicon carbide formation by liquid silicon infiltration of porous carbon structures

NASA Astrophysics Data System (ADS)

Margiotta, Jesse C.

Silicon carbide (SiC) materials are prime candidates for high temperature heat exchangers for next generation nuclear reactors due to their refractory nature and high thermal conductivity at elevated temperatures. This research has focused on demonstrating the potential of liquid silicon infiltration (LSI) for making SiC to achieve this goal. The major advantage of this method over other ceramic processing techniques is the enhanced capability of making fully dense, high purity SiC materials in complex net shapes. For successful formation of net shape SiC using LSI techniques, the carbon preform reactivity and pore structure must be controlled to allow the complete infiltration of the porous carbon structure followed by conversion of this carbon to SiC. We have established a procedure for achieving desirable carbon properties by using carbon precursors consisting of two readily available high purity organic materials, crystalline cellulose and phenolic resin. Phenolic resin yields a glassy carbon with low reactivity and porosity, and cellulose carbon is highly reactive and porous. By adjusting the ratio of these two materials in the precursor mixtures, the properties of the carbons produced can be controlled. We have identified the most favorable carbon precursor composition to be a cellulose:resin mass ratio of 6:4 for LSI formation of SiC. The optimum reaction conditions are a temperature of 1800°C, a pressure of 0.5 Torr of argon, and a time of 120 minutes. The fully dense net shape SiC material produced has a density of 2.96 g cm-3 (about 92% of pure SiC) and a SiC volume fraction of over 0.82. Kinetics of the LSI SiC formation process were studied by optical microscopy and quantitative digital image analysis. This study identified six reaction stages and provided important understanding of the process. Such knowledge can be used to further refine the LSI technique. Although the thermal conductivity of pure SiC at elevated temperatures is very high, thermal conductivities of most commercial SiC materials are much lower due to phonon scattering by impurities (e.g., sintering aids located at the grain boundaries of these materials). The thermal conductivity of our SiC was determined using the laser flash method and it is 214 W/mK at 373 K and 64 W/mK at 1273 K. These values are very close to those of pure SiC and are much higher than those of SiC materials made by industrial processes. Thus, SiC made by our LSI process is an ideally suited material for use in high temperature heat exchanger applications. Electron probe microanalysis (EPMA) and Auger electron spectroscopy (AES) were used to study the chemical composition of LSI SiC materials. Optimized low voltage microanalysis conditions for EPMA of SiC were theoretically determined. EPMA and AES measurements indicate that the SiC phase in our materials is slightly carbon rich. Carbon contamination was identified as a possible source of error during EPMA of SiC, and this error was corrected by using high purity SiC standards. Cellulose and phenolic resin carbons lack the well-defined atomic structures associated with common carbon allotropes. Atomic-scale structure was studied using high resolution transmission electron microscopy (HRTEM), nitrogen gas adsorption and helium gas pycnometry. These studies revealed that cellulose carbon exhibits a very high degree of atomic disorder and angstrom-scale porosity. It has a density of only 93% of that of pure graphite, with primarily sp2 bonding character and a low concentration of graphene clusters. Phenolic resin carbon shows more structural order and substantially less angstrom-scale porosity. Its density is 98% of that of pure graphite, and Fourier transform analysis of its TEM micrographs has revealed high concentrations of sp3 diamond and sp 2 graphene nano-clusters. This is the first time that diamond nano-clusters have been observed in carbons produced from phenolic resin.

Edge on Impact Simulations and Experiments

DTIC Science & Technology

2013-09-01

silicon carbide ( SiC ) and aluminum oxynitride (AlON) ceramics are predicted using the Kayenta macroscopic constitutive model. Aspects regarding...damage propagation. 2.1. Silicon Carbide SiC is an opaque ceramic explored by the armor community. It is perhaps the most extensively characterized...the Weibull modulus for SiC . 4.1. Silicon Carbide Figures 3 and 4 compare experimental images with model predictions of EOI of SiC targets at respective

SiC nanoparticles as potential carriers for biologically active substances

NASA Astrophysics Data System (ADS)

Guevara-Lora, Ibeth; Czosnek, Cezary; Smycz, Aleksandra; Janik, Jerzy F.; Kozik, Andrzej

2009-01-01

Silicon carbide SiC thanks to its many advantageous properties has found numerous applications in diverse areas of technology. In this regard, its nanosized forms often with novel properties have been the subject of intense research in recent years. The aim of this study was to investigate the binding of biologically active substances onto SiC nanopowders as a new approach to biomolecule immobilization in terms of their prospective applications in medicine or for biochemical detection. The SiC nanoparticles were prepared by a two-stage aerosol-assisted synthesis from neat hexamethyldisiloxane. The binding of several proteins (bovine serum albumin, high molecular weight kininogen, immunoglobulin G) on SiC particle surfaces was demonstrated at the levels of 1-2 nanograms per mg of SiC. These values were found to significantly increase after suitable chemical modifications of nanoparticle surfaces (by carbodiimide or 3-aminopropyltrietoxysilane treatment). The study of SiC biocompatibility showed a lack of cytotoxicity against macrophages-like cells below the concentration of 1 mg nanoparticles per mL. In summary, we demonstrated the successful immobilization of the selected substances on the SiC nanoparticles. These results including the cytotoxicity study make nano-SiC highly attractive for potential applications in medicine, biotechnology or molecular detection.

X-ray micro computed tomography characterization of cellular SiC foams for their applications in chemical engineering

DOE Office of Scientific and Technical Information (OSTI.GOV)

Ou, Xiaoxia

Open-cell SiC foams clearly are promising materials for continuous-flow chemical applications such as heterogeneous catalysis and distillation. X-ray micro computed tomography characterization of cellular β-SiC foams at a spatial voxel size of 13.6{sup 3} μm{sup 3} and the interpretation of morphological properties of SiC open-cell foams with implications to their transport properties are presented. Static liquid hold-up in SiC foams was investigated through in-situ draining experiments for the first time using the μ-CT technique providing thorough 3D information about the amount and distribution of liquid hold-up inside the foam. This will enable better modeling and design of structured reactors basedmore » on SiC foams in the future. In order to see more practical uses, μ-CT data of cellular foams must be exploited to optimize the design of the morphology of foams for a specific application. - Highlights: •Characterization of SiC foams using novel X-ray micro computed tomography. •Interpretation of structural properties of SiC foams regarding to their transport properties. •Static liquid hold-up analysis of SiC foams through in-situ draining experiments.« less

Bare and boron-doped cubic silicon carbide nanowires for electrochemical detection of nitrite sensitively

PubMed Central

Yang, Tao; Zhang, Liqin; Hou, Xinmei; Chen, Junhong; Chou, Kuo-Chih

2016-01-01

Fabrication of eletrochemical sensors based on wide bandgap compound semiconductors has attracted increasing interest in recent years. Here we report for the first time electrochemical nitrite sensors based on cubic silicon carbide (SiC) nanowires (NWs) with smooth surface and boron-doped cubic SiC NWs with fin-like structure. Multiple techniques including scanning electron microscopy (SEM), transmission electron microscopy (TEM), X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS) and electron energy loss spectroscopy (EELS) were used to characterize SiC and boron-doped SiC NWs. As for the electrochemical behavior of both SiC NWs electrode, the cyclic voltammetric results show that both SiC electrodes exhibit wide potential window and excellent electrocatalytic activity toward nitrite oxidation. Differential pulse voltammetry (DPV) determination reveals that there exists a good linear relationship between the oxidation peak current and the concentration in the range of 50–15000 μmoL L−1 (cubic SiC NWs) and 5–8000 μmoL L−1 (B-doped cubic SiC NWs) with the detection limitation of 5 and 0.5 μmoL L−1 respectively. Compared with previously reported results, both as-prepared nitrite sensors exhibit wider linear response range with comparable high sensitivity, high stability and reproducibility. PMID:27109361

Oxidation of ZrB2-and HfB2-Based Ultra-High Temperature Ceramics: Effects of Ta Additions

NASA Technical Reports Server (NTRS)

Opila, Elizabeth; Levine, Stanley; Lorinez, Jonathan

2003-01-01

Several compositions of ZrB2- and HfB2-based Ultra-High Temperature Ceramics (UHTC) were oxidized in stagnant air at 1627 C in ten minute cycles for times up to 100 minutes. These compositions include: ZrB2 - 20v% SiC, HfB2 - 20v% SiC, ZrB2 - 20v% SiC - 20v% TaSi2, ZrB2 - 33v% SiC, HfB2 - 20v% SiC - 20v% TaSi2, and ZrB2 - 20v% SiC - 20v% TaC. The weight change due to oxidation was recorded. The ZrB2 - 20v% SiC - 20v% TaSi2 composition was also oxidized in stagnant air at 1927 C and in an arc jet atmosphere. Samples were analyzed after oxidation by x-ray diffraction, field emission scanning electron microscopy, and energy dispersive spectroscopy to determine the reaction products and to observe the microstructure. The ZrB2 - 20v% SiC - 20v% TaSi2 showed the lowest oxidation rate at 1627 C, but performed poorly under the more extreme tests due to liquid phase formation. Effects of Ta-additions on the oxidation of the diboride-based UHTC are discussed.

Fabrication of large aperture SiC brazing mirror

NASA Astrophysics Data System (ADS)

Li, Ang; Wang, Peipei; Dong, Huiwen; Wang, Peng

2016-10-01

The SiC brazing mirror is the mirror whose blank is made by assembling together smaller SiC pieces with brazing technique. Using such kinds of joining techniques, people can manufacture large and complex SiC assemblies. The key technologies of fabricating and testing SiC brazing flat mirror especially for large aperture were studied. The SiC brazing flat mirror was ground by smart ultrasonic-milling machine, and then it was lapped by the lapping smart robot and measured by Coordinate Measuring Machine (CMM). After the PV of the surface below 4um, we did classic coarse polishing to the surface and studied the shape of the polishing tool which directly effects removal amount distribution. Finally, it was figured by the polishing smart robot and measured by Fizeau interferometer. We also studied the influence of machining path and removal functions of smart robots on the manufacturing results and discussed the use of abrasive in this process. At last, an example for fabricating and measuring a similar SiC brazing flat mirror with the aperture of 600 mm made by Shanghai Institute of Ceramics was given. The mirror blank consists of 6 SiC sectors and the surface was finally processed to a result of the Peak-to-Valley (PV) 150nm and Root Mean Square (RMS) 12nm.

Atomistic aspects of ductile responses of cubic silicon carbide during nanometric cutting

PubMed Central

2011-01-01

Cubic silicon carbide (SiC) is an extremely hard and brittle material having unique blend of material properties which makes it suitable candidate for microelectromechanical systems and nanoelectromechanical systems applications. Although, SiC can be machined in ductile regime at nanoscale through single-point diamond turning process, the root cause of the ductile response of SiC has not been understood yet which impedes significant exploitation of this ceramic material. In this paper, molecular dynamics simulation has been carried out to investigate the atomistic aspects of ductile response of SiC during nanometric cutting process. Simulation results show that cubic SiC undergoes sp3-sp2 order-disorder transition resulting in the formation of SiC-graphene-like substance with a growth rate dependent on the cutting conditions. The disorder transition of SiC causes the ductile response during its nanometric cutting operations. It was further found out that the continuous abrasive action between the diamond tool and SiC causes simultaneous sp3-sp2 order-disorder transition of diamond tool which results in graphitization of diamond and consequent tool wear. PMID:22078069

Atomistic aspects of ductile responses of cubic silicon carbide during nanometric cutting.

PubMed

Goel, Saurav; Luo, Xichun; Reuben, Robert L; Rashid, Waleed Bin

2011-11-11

Cubic silicon carbide (SiC) is an extremely hard and brittle material having unique blend of material properties which makes it suitable candidate for microelectromechanical systems and nanoelectromechanical systems applications. Although, SiC can be machined in ductile regime at nanoscale through single-point diamond turning process, the root cause of the ductile response of SiC has not been understood yet which impedes significant exploitation of this ceramic material. In this paper, molecular dynamics simulation has been carried out to investigate the atomistic aspects of ductile response of SiC during nanometric cutting process. Simulation results show that cubic SiC undergoes sp3-sp2 order-disorder transition resulting in the formation of SiC-graphene-like substance with a growth rate dependent on the cutting conditions. The disorder transition of SiC causes the ductile response during its nanometric cutting operations. It was further found out that the continuous abrasive action between the diamond tool and SiC causes simultaneous sp3-sp2 order-disorder transition of diamond tool which results in graphitization of diamond and consequent tool wear.

A SiC MOSFET Based Inverter for Wireless Power Transfer Applications

DOE Office of Scientific and Technical Information (OSTI.GOV)

Onar, Omer C; Chinthavali, Madhu Sudhan; Campbell, Steven L

2014-01-01

In a wireless power transfer (WPT) system, efficiency of the power conversion stages is crucial so that the WPT technology can compete with the conventional conductive charging systems. Since there are 5 or 6 power conversion stages, each stage needs to be as efficient as possible. SiC inverters are crucial in this case; they can handle high frequency operation and they can operate at relatively higher temperatures resulting in reduces cost and size for the cooling components. This study presents the detailed power module design, development, and fabrication of a SiC inverter. The proposed inverter has been tested at threemore » center frequencies that are considered for the WPT standardization. Performance of the inverter at the same target power transfer level is analyzed along with the other system components. In addition, another SiC inverter has been built in authors laboratory by using the ORNL designed and developed SiC modules. It is shown that the inverter with ORNL packaged SiC modules performs simular to that of the inverter having commercially available SiC modules.« less

Laparoscopic cholecystectomy versus small incision cholecystectomy in symptomatic gallstones disease.

PubMed

Mehrvarz, Shaban; Mohebi, Hassan Ali; Kalantar Motamedi, Mohammad Hosein

2012-10-01

To compare the results and outcomes of the laparoscopic cholecystectomy (LC) with the small incision cholecystectomy (SIC). Observational study. Baqiyatallah Hospital, Tehran, Iran, from February 2008 to March 2009. Patients with symptomatic gallstones that were referred and enrolled in the study for LC or SIC. Operation, anaesthesia, analgesics and postoperative care were standardized. The patients were assessed for operation time, postoperative pain, nausea, vomiting, hospital stay, return to work time and complications in the postoperative period on day 1, 1 week, 1 month and 6 months, postoperatively. Of 144 patients, 81 underwent LC and 63 underwent SIC. Both groups were matched for age, gender, BMI, clinical findings and ASA grading. The mean duration of operation was 74 and 62 minutes in the LC and SIC groups, respectively (p = 0.0059). Duration of hospital stay and return to regular activities were shorter after LC compared to SIC. Pain scores, nausea and vomiting were the same in both groups, although the frequency of intra-operative complications were greater in LC compared to SIC. Outcome and complications of SIC were comparable with those of LC.

Three-Level Inverter with 60 A, 4.5 kV Si IGBT/SiC JBS Power Modules for Marine Applications

DTIC Science & Technology

2013-04-01

charge region occupying the whole drift region before the reverse- recovery current is zero, which causes the reverse-recovery current to snap to zero...around 300nH. 0.6 0.6005 0.601 0.6015 0.602 0.6025 0 500 1000 1500 2000 2500 Time (ms) V ol ta ge ( V ) 5A 10A 20A 40A 60A Figure 4: 4.5kV Si PiN...same operating conditions. 0.23 0.2305 0.231 0.2315 0.232 0.2325 0 1000 2000 3000 4000 Time (ms) V ol ta ge ( V ) 5A 10A 20A 40A 60A

Survival of refractory presolar grain analogs during Stardust-like impact into Al foils: Implications for Wild 2 presolar grain abundances and study of the cometary fine fraction

NASA Astrophysics Data System (ADS)

Croat, T. K.; Floss, C.; Haas, B. A.; Burchell, M. J.; Kearsley, A. T.

2015-08-01

We present results of FIB-TEM studies of 12 Stardust analog Al foil craters which were created by firing refractory Si and Ti carbide and nitride grains into Al foils at 6.05 km s-1 with a light-gas gun to simulate capture of cometary grains by the Stardust mission. These foils were prepared primarily to understand the low presolar grain abundances (both SiC and silicates) measured by SIMS in Stardust Al foil samples. Our results demonstrate the intact survival of submicron SiC, TiC, TiN, and less-refractory Si3N4 grains. In small (<2 μm) craters that are formed by single grain impacts, the entire impacting crystalline grain is often preserved intact with minimal modification. While they also survive in crystalline form, grains at the bottom of larger craters (>5 μm) are typically fragmented and are somewhat flattened in the direction of impact due to partial melting and/or plastic deformation. The low presolar grain abundance estimates derived from SIMS measurements of large craters (mostly >50 μm) likely result from greater modification of these impactors (i.e., melting and isotopic dilution), due to higher peak temperatures/pressures in these crater impacts. The better survivability of grains in smaller craters suggests that more accurate presolar grain estimates may be achievable through measurement of such craters. It also suggests small craters can provide a complementary method of study of the Wild 2 fine fraction, especially for refractory CAI-like minerals.

Producing Silicon Carbide for Semiconductor Devices

NASA Technical Reports Server (NTRS)

Hsu, G. C.; Rohatgi, N. K.

1986-01-01

Processes proposed for production of SiC crystals for use in semiconductors operating at temperatures as high as 900 degrees C. Combination of new processes produce silicon carbide chips containing epitaxial layers. Chips of SiC first grown on porous carbon matrices, then placed in fluidized bed, where additional layer of SiC grows. Processes combined to yield complete process. Liquid crystallization process used to make SiC particles or chips for fluidized-bed process.

Method of producing novel silicon carbide articles. [Patent application

DOEpatents

Milewski, J.V.

1982-06-18

A method of producing articles comprising reaction-bonded silicon carbide (SiC) and graphite (and/or carbon) is given. The process converts the graphite (and/or carbon) in situ to SiC, thus providing the capability of economically obtaining articles made up wholly or partially of SiC having any size and shape in which graphite (and/or carbon) can be found or made. When the produced articles are made of an inner graphite (and/or carbon) substrate to which SiC is reaction bonded, these articles distinguish SiC-coated graphite articles found in the prior art by the feature of a strong bond having a gradual (as opposed to a sharply defined) interface which extends over a distance of mils. A method for forming SiC whisker-reinforced ceramic matrices is also given. The whisker-reinforced articles comprise SiC whiskers which substantially retain their structural integrity.

Method of producing silicon carbide articles

DOEpatents

Milewski, John V.

1985-01-01

A method of producing articles comprising reaction-bonded silicon carbide (SiC) and graphite (and/or carbon) is given. The process converts the graphite (and/or carbon) in situ to SiC, thus providing the capability of economically obtaining articles made up wholly or partially of SiC having any size and shape in which graphite (and/or carbon) can be found or made. When the produced articles are made of an inner graphite (and/or carbon) substrate to which SiC is reaction bonded, these articles distinguish SiC-coated graphite articles found in the prior art by the feature of a strong bond having a gradual (as opposed to a sharply defined) interface which extends over a distance of mils. A method for forming SiC whisker-reinforced ceramic matrices is also given. The whisker-reinforced articles comprise SiC whiskers which substantially retain their structural integrity.

Defect-induced room temperature ferromagnetism in silicon carbide nanosheets

NASA Astrophysics Data System (ADS)

Yang, Guijin; Wu, Yanyan; Ma, Shuyi; Fu, Yujun; Gao, Daqiang; Zhang, Zhengmei; Li, Jinyun

2018-07-01

Silicon carbide (SiC) nanosheets with different sizes and thickness were synthesized by a liquid exfoliation method by varying the exfoliating time in the N, N-dimethylformamide organic solvent. During the exfoliating time increasing from 4 to 16 h, the size of the SiC nanosheets decreases gradually from 500 to 200 nm, and the thickness decreases from 9 to 3.5 nm. Results showed that all prepared SiC nanosheets show intrinsic room temperature ferromagnetism, which is greatly different to the diamagnetism nature of virgin bulk SiC. Moreover, the saturation magnetization of the SiC nanosheets increases monotonously from 0.005 to 0.018 emu/g as the size and thickness decrease. Further studies via transmission electron microscopy, superconducting quantum interference device, and electron spin resonance revealed that the origin of the ferromagnetism in SiC nanosheets might be attributed to the defects with carbon dangling bond on the surface of nanosheets.

Interaction mechanisms between ceramic particles and atomized metallic droplets

NASA Astrophysics Data System (ADS)

Wu, Yue; Lavernia, Enrique J.

1992-10-01

The present study was undertaken to provide insight into the dynamic interactions that occur when ceramic particles are placed in intimate contact with a metallic matrix undergoing a phase change. To that effect, Al-4 wt pct Si/SiCp composite droplets were synthesized using a spray atomization and coinjection approach, and their solidification microstructures were studied both qualitatively and quantitatively. The present results show that SiC particles (SiCp) were incor- porated into the matrix and that the extent of incorporation depends on the solidification con- dition of the droplets at the moment of SiC particle injection. Two factors were found to affect the distribution and volume fraction of SiC particles in droplets: the penetration of particles into droplets and the entrapment and/or rejection of particles by the solidification front. First, during coinjection, particles collide with the atomized droplets with three possible results: they may penetrate the droplets, adhere to the droplet surface, or bounce back after impact. The extent of penetration of SiC particles into droplets was noted to depend on the kinetic energy of the particles and the magnitude of the surface energy change in the droplets that occurs upon impact. In liquid droplets, the extent of penetration of SiC particles was shown to depend on the changes in surface energy, ΔEs, experienced by the droplets. Accordingly, large SiC particles encoun- tered more resistance to penetration relative to small ones. In solid droplets, the penetration of SiC particles was correlated with the dynamic pressure exerted by the SiC particles on the droplets during impact and the depth of the ensuing crater. The results showed that no pene- tration was possible in such droplets. Second, once SiC particles have penetrated droplets, their final location in the microstructure is governed by their interactions with the solidification front. As a result of these interactions, both entrapment and rejection of SiC particles occurred during droplet solidification. A comparison of the present results to those anticipated from well-established kinetic and thermodynamic models led to some interesting findings. First, the models proposed by Boiling and Cisse[24] and Chernov et al.[58] predict relative low critical interface velocities necessary for entrapment, inconsistent with the present experimental findings. Second, although the observed correlation between the critical front velocity and droplet diameter was generally consistent with that predicted by Stefanescu et a/.’s model,[27] the dependence on the size of SiC particles was not. In view of this discrepancy, three possible mechanisms were proposed to account for the experimental findings: nucleation of α-Al on SiC particles, entrapment of SiC particles between primary dendrite arms, and entrapment of SiC particles between secondary dendrite arms.

Investigation of occupational asthma: Do clinicians fail to identify relevant occupational exposures?

PubMed Central

de Olim, Carlo; Bégin, Denis; Boulet, Louis-Philippe; Cartier, André; Gérin, Michel; Lemière, Catherine

2015-01-01

BACKGROUND: Specific inhalation challenges (SIC) enable the identification of the agent responsible of occupational asthma (OA). A clinician may fail to identify a specific agent in the workplace, which may potentially lead to a misdiagnosis. The expert assessment method performed by an occupational hygienist has been used to evaluate occupational exposures in epidemiological studies. OBJECTIVE: The broad aim of the present study was to evaluate the contribution of an expert assessment performed by an occupational hygienist to the diagnosis of OA. The specific aim was to compare work-place exposures identified by an occupational hygienist and by chest physicians in subjects with positive SICs and subjects with asthma, but with a negative SIC. METHODS: SICs were performed in 120 cases: 67 were positive and 53 were negative. A clinician assessed occupational exposures to sensitizers during a routine clinical evaluation preceding the performance of the SIC. An expert assessment of occupational exposures was performed by an occupational hygienist blind to the result of the SIC. RESULTS: The occupational hygienist identified the causal agent in 96.7% of the 61 cases of positive SIC. In 33 (62.3%) cases of negative SICs, the occupational hygienist identified ≥1 sensitizing agent(s) that had not been identified by the clinician. CONCLUSION: The hygienist identified the causal agent in almost all subjects with OA. In contrast, the clinician failed to identify potential exposures to sensitizers in >60% of the negative SIC subjects, which may have resulted in some subjects being misdiagnosed as not having OA. PMID:26422401

Severe accident modeling of a PWR core with different cladding materials

DOE Office of Scientific and Technical Information (OSTI.GOV)

Johnson, S. C.; Henry, R. E.; Paik, C. Y.

2012-07-01

The MAAP v.4 software has been used to model two severe accident scenarios in nuclear power reactors with three different materials as fuel cladding. The TMI-2 severe accident was modeled with Zircaloy-2 and SiC as clad material and a SBO accident in a Zion-like, 4-loop, Westinghouse PWR was modeled with Zircaloy-2, SiC, and 304 stainless steel as clad material. TMI-2 modeling results indicate that lower peak core temperatures, less H 2 (g) produced, and a smaller mass of molten material would result if SiC was substituted for Zircaloy-2 as cladding. SBO modeling results indicate that the calculated time to RCSmore » rupture would increase by approximately 20 minutes if SiC was substituted for Zircaloy-2. Additionally, when an extended SBO accident (RCS creep rupture failure disabled) was modeled, significantly lower peak core temperatures, less H 2 (g) produced, and a smaller mass of molten material would be generated by substituting SiC for Zircaloy-2 or stainless steel cladding. Because the rate of SiC oxidation reaction with elevated temperature H{sub 2}O (g) was set to 0 for this work, these results should be considered preliminary. However, the benefits of SiC as a more accident tolerant clad material have been shown and additional investigation of SiC as an LWR core material are warranted, specifically investigations of the oxidation kinetics of SiC in H{sub 2}O (g) over the range of temperatures and pressures relevant to severe accidents in LWR 's. (authors)« less

The 11 micron Silicon Carbide Feature in Carbon Star Shells

NASA Technical Reports Server (NTRS)

Speck, A. K.; Barlow, M. J.; Skinner, C. J.

1996-01-01

Silicon carbide (SiC) is known to form in circumstellar shells around carbon stars. SiC can come in two basic types - hexagonal alpha-SiC or cubic beta-SiC. Laboratory studies have shown that both types of SiC exhibit an emission feature in the 11-11.5 micron region, the size and shape of the feature varying with type, size and shape of the SiC grains. Such a feature can be seen in the spectra of carbon stars. Silicon carbide grains have also been found in meteorites. The aim of the current work is to identity the type(s) of SiC found in circumstellar shells and how they might relate to meteoritic SiC samples. We have used the CGS3 spectrometer at the 3.8 m UKIRT to obtain 7.5-13.5 micron spectra of 31 definite or proposed carbon stars. After flux-calibration, each spectrum was fitted using a chi(exp 2)-minimisation routine equipped with the published laboratory optical constants of six different samples of small SiC particles, together with the ability to fit the underlying continuum using a range of grain emissivity laws. It was found that the majority of observed SiC emission features could only be fitted by alpha-SiC grains. The lack of beta-SiC is surprising, as this is the form most commonly found in meteorites. Included in the sample were four sources, all of which have been proposed to be carbon stars, that appear to show the SiC feature in absorption.

Electromagnetic interference shielding performance of nano-layered Ti3SiC2 ceramics at high-temperatures

NASA Astrophysics Data System (ADS)

Li, Sigong; Tan, Yongqiang; Xue, Jiaxiang; Liu, Tong; Zhou, Xiaosong; Zhang, Haibin

2018-01-01

The X-band electromagnetic interference (EMI) shielding properties of nano-layered Ti3SiC2 ceramics were evaluated from room temperature up to 800°C in order to explore the feasibility of Ti3SiC2 as efficient high temperature EMI shielding material. It was found that Ti3SiC2 exhibits satisfactory EMI shielding effectiveness (SE) close to 30 dB at room temperature and the EMI SE shows good temperature stability. The remarkable EMI shielding properties of Ti3SiC2 can be mainly attributed to high electrical conductivity, high dielectric loss and more importantly the multiple reflections due to the layered structure.

Near-field radiative heat transfer between graphene-covered hyperbolic metamaterials

NASA Astrophysics Data System (ADS)

Hong, Xiao-Juan; Li, Jian-Wen; Wang, Tong-Biao; Zhang, De-Jian; Liu, Wen-Xing; Liao, Qing-Hua; Yu, Tian-Bao; Liu, Nian-Hua

2018-04-01

We propose the use of graphene-covered silicon carbide (SiC) nanowire arrays (NWAs) for theoretical studies of near-field radiative heat transfer. The SiC NWAs exhibit a hyperbolic characteristic at an appropriately selected filling-volume fraction. The surface plasmon supported by graphene and the hyperbolic modes supported by SiC NWAs significantly affect radiative heat transfer. The heat-transfer coefficient (HTC) between the proposed structures is larger than that between SiC NWAs. We also find that the chemical potential of graphene plays an important role in modulating the HTC. The tunability of chemical potential through gate voltage enables flexible control of heat transfer using the graphene-covered SiC NWAs.

Development of SiC Large Tapered Crystal Growth

NASA Technical Reports Server (NTRS)

Neudeck, Phil

2011-01-01

Research Focus Area: Power Electronics, Temperature Tolerant Devices. Demonstrate initial feasibility of totally new "Large Tapered Crystal" (LTC) process for growing vastly improved large-diameter wide-band gap wafers. Addresses Targets: The goal of this research is to experimentally investigate and demonstrate feasibility of the key unproven LTC growth processes in SiC. Laser-assisted growth of long SiC fiber seeds. Radial epitaxial growth enlargement of seeds into large SiC boules. Uniqueness and Impacts open a new technology path to large-diameter SiC and GaN wafers with 1000-fold defect density improvement at 2-4 fold lower cost. Leapfrog improvement in wide band gap power device capability and cost.

Dangling bond defects in SiC: An ab initio study

NASA Astrophysics Data System (ADS)

Tuttle, Blair R.

2018-01-01

We report first-principles microscopic calculations of the properties of defects with dangling bonds in crystalline 3 C -SiC. Specifically, we focus on hydrogenated Si and C vacancies, divacancies, and multivacancies. The latter is a generic model for an isolated dangling bond within a bulk SiC matrix. Hydrogen serves to passivate electrically active defects to allow the isolation of a single dangling-bond defect. We used hybrid density-functional methods to determine energetics and electrical activity. The present results are compared to previous 3 C -SiC calculations and experiments. Finally, we identify homopolar carbon dangling-bond defects as the leakage causing defects in nanoporous SiC alloys.

The impact resistance of SiC and other mechanical properties of SiC and Si3N4

NASA Technical Reports Server (NTRS)

Bradt, R. C.

1984-01-01

Studies focused on the impact and mechanical behavior of SiC and Si3N4 at high temperatures are summarized. Instrumented Charpy impact testing is analyzed by a compliance method and related to strength; slow crack growth is related to processing, and creep is discussed. The transient nature of flaw populations during oxidation under load is emphasized for both SiC and Si3N4.

Density Determination and Metallographic Surface Preparation of Electron Beam Melted Ti6Al4V

DTIC Science & Technology

2015-06-02

Electron Microscopy SiC Silicon Carbide Ti6Al4V Titanium-6Aluminum-4Vanadium WRNMMC Walter Reed National Military Medical Center Wd Dry...polishing with silicon carbide ( SiC ) papers and colloidal silica suspension to produce samples with varying surface topographies. Surfaces were...manufacturing process. For titanium alloys, the grinding media typically used is silicon carbide ( SiC ) paper. Table 1 lists grades of SiC papers that are

Additive Manufacturing of SiC Based Ceramics and Ceramic Matrix Composites

NASA Technical Reports Server (NTRS)

Halbig, Michael Charles; Singh, Mrityunjay

2015-01-01

Silicon carbide (SiC) ceramics and SiC fiber reinforcedSiC ceramic matrix composites (SiCSiC CMCs) offer high payoff as replacements for metals in turbine engine applications due to their lighter weight, higher temperature capability, and lower cooling requirements. Additive manufacturing approaches can offer game changing technologies for the quick and low cost fabrication of parts with much greater design freedom and geometric complexity. Four approaches for developing these materials are presented. The first two utilize low cost 3D printers. The first uses pre-ceramic pastes developed as feed materials which are converted to SiC after firing. The second uses wood containing filament to print a carbonaceous preform which is infiltrated with a pre-ceramic polymer and converted to SiC. The other two approaches pursue the AM of CMCs. The first is binder jet SiC powder processing in collaboration with rp+m (Rapid Prototyping+Manufacturing). Processing optimization was pursued through SiC powder blending, infiltration with and without SiC nano powder loading, and integration of nanofibers into the powder bed. The second approach was laminated object manufacturing (LOM) in which fiber prepregs and laminates are cut to shape by a laser and stacked to form the desired part. Scanning electron microscopy was conducted on materials from all approaches with select approaches also characterized with XRD, TGA, and bend testing.

Effect of the Different High Volume Fraction of SiC Particles on the Junction of Bismuthate Glass-SiCp/Al Composite.

PubMed

Wang, Bin; Qu, Shengguan; Li, Xiaoqiang

2018-01-01

The in-house developed bismuthate glass and the SiC p /Al composites with different volume fractions of SiC particles (namely, 60 vol.%, 65 vol.%, 70 vol.%, and 75 vol.%) were jointed by vacuum hot-pressing process. The novel material can be used for the space mirror. The SiCp is an abbreviation for SiC particle. Firstly, the SiC p /Al composites with different vol.% of SiC particle were manufactured by using infiltration process. In order to obtain a stable bonding interface, the preoxide layers were fabricated on the surfaces of these composites for reacting with the bismuthate glass. The coefficient of thermal expansion (CTE) was carried out for characterizing the difference between the composites and bismuthate glass. The sealing quality of the composites and the bismuthate glass was quantified by using shear strength testing. The optical microstructures showed the particles were uniformly distributed in the Al matrix. The SEM image shows that a smooth oxidation layer was generated on the SiC p /Al composite. The CTE testing result indicated that the higher the vol.% of the particles in the composite, the lower the CTE value. The shear strength testing result disclosed that SiC p /Al composite with relatively low CTE value was favorable to obtain a bonding interface with high strength.

Prediction of obeche wood-induced asthma by specific skin prick testing.

PubMed

Hannu, T; Lindström, I; Palmroos, P; Kuuliala, O; Sauni, R

2013-09-01

It has previously been shown that a positive skin prick test (SPT) result is a good predictor of a positive specific inhalation challenge (SIC) in patients with occupational asthma (OA) related to wheat or rye flours. This association has not been previously studied in OA attributable to obeche wood. To describe a clinical series of patients with OA induced by obeche wood. To investigate if the SPT result can be used as a predictor for the outcome of SIC tests. OA was diagnosed according to patient history, lung function examinations and SIC tests, as well as the determination of obeche SPTs. We analysed sensitivity, specificity and positive (PPV) and negative predictive values (NPV) at different wheal sizes of the SPTs and drew receiver-operating characteristic plots using the SIC test result as the gold standard. Obeche wood SIC tests were performed on 34 symptomatic workers. Of these, 27 workers had a positive test result and were diagnosed as having OA. The minimal cut-off value with a PPV of 100% was an SPT wheal of 3.5 mm from obeche wood. This means that all workers with a wheal size of ≥ 3.5 mm from obeche wood had a positive SIC. Positive SPT results in symptomatic workers were good predictors of a positive SIC. SIC with obeche wood may be unnecessary in strongly sensitized workers.

Rapid degradation of azo dye Direct Black BN by magnetic MgFe2O4-SiC under microwave radiation

NASA Astrophysics Data System (ADS)

Gao, Jia; Yang, Shaogui; Li, Na; Meng, Lingjun; Wang, Fei; He, Huan; Sun, Cheng

2016-08-01

A novel microwave (MW) catalyst, MgFe2O4 loaded on SiC (MgFe2O4-SiC), was successfully synthesized by sol-gel method, and pure MgFe2O4 was used as reference. The MgFe2O4 and MgFe2O4-SiC catalysts were characterized by X-ray diffraction (XRD), Scanning electron microscopy (SEM), Transmission electron microscopy (TEM), N2 adsorption analyzer (BET specific surface area), X-ray photoelectron spectroscopy (XPS). The electromagnetic parameters of the prepared catalysts were measured by vector network analyzer. The reflection loss (RL) based on the electromagnetic parameters calculated in Matlab showed MgFe2O4-SiC attained the maximum absorbing value of 13.32 dB at 2.57 GHz, which reached extremely high RL value at low frequency range, revealing the excellent MW absorption property of MgFe2O4-SiC. MW-induced degradation of Direct Black BN (DB BN) over as-synthesized MgFe2O4-SiC indicated that degradation efficiency of DB BN (20 mg L-1) in 5 min reached 96.5%, the corresponding TOC removal was 65%, and the toxicity of DB BN after degradation by MgFe2O4-SiC obviously decreased. The good stability and applicability of MgFe2O4-SiC on the degradation process were also discovered. Moreover, the ionic chromatogram during degradation of DB BN demonstrated that the C-S, C-N and azo bonds in the DB BN molecule were destroyed gradually. MW-induced rad OH and holes could be responsible for the efficient removal involved in the system. These findings make MgFe2O4-SiC become an excellent MW absorbent as well as an effective MW catalyst with rapid degradation of DB BN. Therefore, it may be promising for MgFe2O4-SiC under MW radiation to deal with various dyestuffs and other toxic organic pollutants.

Recycling silicon wire-saw slurries: separation of silicon and silicon carbide in a ramp settling tank under an applied electrical field.

PubMed

Tsai, Tzu-Hsuan; Shih, Yu-Pei; Wu, Yung-Fu

2013-05-01

The growing demand for silicon solar cells in the global market has greatly increased the amount of silicon sawing waste produced each year. Recycling kerf Si and SiC from sawing waste is an economical method to reduce this waste. This study reports the separation of Si and SiC using a ramp settling tank. As they settle in an electrical field, small Si particles with higher negative charges have a longer horizontal displacement than SiC particles in a solution of pH 7, resulting in the separation of Si and SiC. The agreement between experimental results and predicted results shows that the particles traveled a short distance to reach the collection port in the ramp tank. Consequently, the time required for tiny particles to hit the tank bottom decreased, and the interference caused by the dispersion between particles and the fluid motion during settling decreased. In the ramp tank, the highest purities of the collected SiC and Si powders were 95.2 and 7.01 wt%, respectively. Using a ramp tank, the recycling fraction of Si-rich powders (SiC < 15 wt%) reached 22.67% (based on the whole waste). This fraction is greater than that achieved using rectangular tanks. Recycling Si and SiC abrasives from the silicon sawing waste is regarded as an economical solution to reduce the sawing waste. However, the separation of Si and SiC is difficult. This study reports the separation of Si and SiC using a ramp settling tank under an applied electrical field. As they settle in an electrical field, small Si particles with higher negative charges have a longer horizontal displacement than SiC particles in a solution of pH 7, resulting in the separation of Si and SiC. Compared with the rectangular tanks, the recycling fraction of Si-rich powders using a ramp tank is greater, and the proposed ramp settling tank is more suitable for industrial applications.

Combining graphene with silicon carbide: synthesis and properties - a review

NASA Astrophysics Data System (ADS)

Shtepliuk, Ivan; Khranovskyy, Volodymyr; Yakimova, Rositsa

2016-11-01

Being a true two-dimensional crystal, graphene possesses a lot of exotic properties that would enable unique applications. Integration of graphene with inorganic semiconductors, e.g. silicon carbide (SiC) promotes the birth of a class of hybrid materials which are highly promising for development of novel operations, since they combine the best properties of two counterparts in the frame of one hybrid platform. As a specific heterostructure, graphene on SiC performs strongly, dependent on the synthesis method and the growth modes. In this article, a comprehensive review of the most relevant studies of graphene growth methods and mechanisms on SiC substrates has been carried out. The aim is to elucidate the basic physical processes that are responsible for the formation of graphene on SiC. First, an introduction is made covering some intriguing and not so often discussed properties of graphene. Then, we focus on integration of graphene with SiC, which is facilitated by the nature of SiC to assume graphitization. Concerning the synthesis methods, we discuss thermal decomposition of SiC, chemical vapor deposition and molecular beam epitaxy, stressing that the first technique is the most common one when SiC substrates are used. In addition, we briefly appraise graphene synthesis via metal mediated carbon segregation. We address in detail the main aspects of the substrate effect, such as substrate face polarity, off-cut, kind of polytype and nonpolar surfaces on the growth of graphene layers. A comparison of graphene grown on the polar faces is made. In particular, growth of graphene on Si-face SiC is critically analyzed concerning growth kinetics and growth mechanisms taking into account the specific characteristics of SiC (0001) surfaces, such as the step-terrace structure and the unavoidable surface reconstruction upon heating. In all subtopics obstacles and solutions are featured. We complete the review with a short summary and concluding remarks.

Distribution of fission products palladium, silver, cerium and cesium in the un-corroded areas of the locally corroded SiC layer of a neutron irradiated TRISO fuel particle

DOE PAGES

Wen, Haiming; van Rooyen, Isabella J.

2017-04-14

Here, detailed electron microscopy studies were performed to investigate the distribution and composition of fission products in the SiC layer of a tristructural isotropic coated particle exhibiting localized corrosion. Previous studies on this particle indicated that pure carbon areas in the SiC layer, resulting from localized corrosion of SiC by Pd, provide pathways for Ag, Cd and Cs migration. This study reveals the presence of Ag- and/or Cd-containing precipitates in un-corroded SiC areas. Ag/Cd may exist by themselves or coexist with Pd. Ag/Cd mainly transport along SiC grain boundaries. An Ag-Pd-Cd precipitate was identified at a stacking fault inside amore » SiC grain, suggesting that intragranular transport of Ag/Cd is possible. Ce is present with Pd or Pd-U in some precipitates >50 nm. U and Ce frequently coexist with each other, whereas Ag/Cd usually does not coexist with U or Ce. No Cs was detected in any precipitates in the areas examined.« less

Validation of Suomi-NPP VIIRS sea ice concentration with very high-resolution satellite and airborne camera imagery

NASA Astrophysics Data System (ADS)

Baldwin, Daniel; Tschudi, Mark; Pacifici, Fabio; Liu, Yinghui

2017-08-01

Two independent VIIRS-based Sea Ice Concentration (SIC) products are validated against SIC as estimated from Very High Spatial Resolution Imagery for several VIIRS overpasses. The 375 m resolution VIIRS SIC from the Interface Data Processing Segment (IDPS) SIC algorithm is compared against estimates made from 2 m DigitalGlobe (DG) WorldView-2 imagery and also against estimates created from 10 cm Digital Mapping System (DMS) camera imagery. The 750 m VIIRS SIC from the Enterprise SIC algorithm is compared against DG imagery. The IDPS vs. DG comparisons reveal that, due to algorithm issues, many of the IDPS SIC retrievals were falsely assigned ice-free values when the pixel was clearly over ice. These false values increased the validation bias and RMS statistics. The IDPS vs. DMS comparisons were largely over ice-covered regions and did not demonstrate the false retrieval issue. The validation results show that products from both the IDPS and Enterprise algorithms were within or very close to the 10% accuracy (bias) specifications in both the non-melting and melting conditions, but only products from the Enterprise algorithm met the 25% specifications for the uncertainty (RMS).

The Development of SiC MOSFET-based Switching Power Amplifiers for Fusion Science

NASA Astrophysics Data System (ADS)

Prager, James; Ziemba, Timothy; Miller, Kenneth; Picard, Julian

2015-11-01

Eagle Harbor Technologies (EHT), Inc. is developing a switching power amplifier (SPA) based on silicon carbide (SiC) metal-oxide-semiconductor field-effect transistor (MOSFET). SiC MOSFETs offer many advantages over IGBTs including lower drive energy requirements, lower conduction and switching losses, and higher switching frequency capabilities. When comparing SiC and traditional silicon-based MOSFETs, SiC MOSFETs provide higher current carrying capability allowing for smaller package weights and sizes and lower operating temperature. EHT has conducted single device testing that directly compares the capabilities of SiC MOSFETs and IGBTs to demonstrate the utility of SiC MOSFETs for fusion science applications. These devices have been built into a SPA that can drive resistive loads and resonant tank loads at 800 V, 4.25 kA at pulse repetition frequencies up to 1 MHz. During the Phase II program, EHT will finalize the design of the SPA. In Year 2, EHT will replace the SPAs used in the HIT-SI lab at the University of Washington to allow for operation over 100 kHz. SPA prototype results will be presented. This work is supported under DOE Grant # DE-SC0011907.

Ab initio molecular dynamics simulation of the effects of stacking faults on the radiation response of 3C-SiC

PubMed Central

Jiang, M.; Peng, S. M.; Zhang, H. B.; Xu, C. H.; Xiao, H. Y.; Zhao, F. A.; Liu, Z. J.; Zu, X. T.

2016-01-01

In this study, an ab initio molecular dynamics method is employed to investigate how the existence of stacking faults (SFs) influences the response of SiC to low energy irradiation. It reveals that the C and Si atoms around the SFs are generally more difficult to be displaced than those in unfaulted SiC, and the corresponding threshold displacement energies for them are generally larger, indicative of enhanced radiation tolerance caused by the introduction of SFs, which agrees well with the recent experiment. As compared with the unfaulted state, more localized point defects are generated in faulted SiC. Also, the efficiency of damage production for Si recoils is generally higher than that of C recoils. The calculated potential energy increases for defect generation in SiC with intrinsic and extrinsic SFs are found to be higher than those in unfaulted SiC, due to the stronger screen-Coulomb interaction between the PKA and its neighbors. The presented results provide a fundamental insight into the underlying mechanism of displacement events in faulted SiC and will help to advance the understanding of the radiation response of SiC with and without SFs. PMID:26880027

Enhanced thermoelectric properties of nano SiC dispersed Bi2Sr2Co2Oy Ceramics

NASA Astrophysics Data System (ADS)

Hu, Qiujun; Wang, Kunlun; Zhang, Yingjiu; Li, Xinjian; Song, Hongzhang

2018-04-01

The thermoelectric properties of Bi2Sr2Co2Oy + x wt% nano SiC (x = 0.00, 0.025, 0.05, 0.1, 0.2, and 0.3) prepared by the solid-state reaction method were investigated from 300 K to 923 K. The resistivity can be reduced effectively by adding a small amount of SiC nano particles, which is attributed to the increase of the carrier concentration. At the same time, the Seebeck coefficients can be improved effectively due to the energy filtering effect that low energy carriers are strongly dispersed at the interface between the SiC nano particles and the matrix. The decrease of thermal conductivity is due to the increase of the scattering ability of the phonons by the SiC nanoparticles distributed at the boundary of the matrix. As a result, the Bi2Sr2Co2Oy + x wt% SiC composites exhibit better thermoelectric properties. The maximum ZT value 0.24 is obtained when x = 0.05 at 923 K. Compared with the sample without SiC nano particles, the ZT value is increased by about 59.7%.

Enhanced thermal conductivity of uranium dioxide-silicon carbide composite fuel pellets prepared by Spark Plasma Sintering (SPS)

NASA Astrophysics Data System (ADS)

Yeo, S.; Mckenna, E.; Baney, R.; Subhash, G.; Tulenko, J.

2013-02-01

Uranium dioxide (UO2)-10 vol% silicon carbide (SiC) composite fuel pellets were produced by oxidative sintering and Spark Plasma Sintering (SPS) at a range of temperatures from 1400 to 1600 °C. Both SiC whiskers and SiC powder particles were utilized. Oxidative sintering was employed over 4 h and the SPS sintering was employed only for 5 min at the highest hold temperature. It was noted that composite pellets sintered by SPS process revealed smaller grain size, reduced formation of chemical products, higher density, and enhanced interfacial contact compared to the pellets made by oxidative sintering. For given volume of SiC, the pellets with powder particles yielded a smaller grain size than pellets with SiC whiskers. Finally thermal conductivity measurements at 100 °C, 500 °C, and 900 °C revealed that SPS sintered UO2-SiC composites exhibited an increase of up to 62% in thermal conductivity compared to UO2 pellets, while the oxidative sintered composite pellets revealed significantly inferior thermal conductivity values. The current study points to the improved processing capabilities of SPS compared to oxidative sintering of UO2-SiC composites.

Structural changes of Ti3SiC2 induced by helium irradiation with different doses

NASA Astrophysics Data System (ADS)

Zhang, Hongliang; Su, Ranran; Shi, Liqun; O'Connor, Daryl J.; Wen, Haiming

2018-03-01

In this study, the microstructure changes of Ti3SiC2 MAX phase material induced by helium irradiation and evolution with a sequence of different helium irradiation doses of 5 × 1015, 1 × 1016, 5 × 1016 and 1 × 1017 cm-2 at room temperature (RT) were characterized with grazing incidence X-ray diffraction (GIXRD) and Raman spectra analysis. The irradiation damage process of Ti3SiC2 can be roughly divided into three stages according to the level of helium irradiation dose: (1) for a low damage dose, only crystal and damaged Ti3SiC2 exit; (2) at a higher irradiation dose, there is some damaged TiC phase additionally; (3) with a much higher irradiation dose, crystal TiC phase could be found inside the samples as well. Moreover, the 450 °C 5 × 1016 cm-2 helium irradiation on Ti3SiC2 has confirmed that Ti3SiC2 has much higher irradiation tolerance at higher temperature, which implies that Ti3SiC2 could be a potential future structural and fuel coating material working at high temperature environments.

Refractory Oxide Coatings on Sic Ceramics

NASA Technical Reports Server (NTRS)

Lee, Kang N.; Jacobson, Nathan S.; Miller, Robert A.

1994-01-01

Silicon carbide with a refractory oxide coating is potentially a very attractive ceramic system. It offers the desirable mechanical and physical properties of SiC and the environmental durability of a refractory oxide. The development of a thermal shock resistant plasma-sprayed mullite coating on SiC is discussed. The durability of the mullite/SiC in oxidizing, reducing, and molten salt environments is discussed. In general, this system exhibits better behavior than uncoated SiC. Areas for further developments are discussed.

Silicon carbide whisker-zirconia reinforced mullite and alumina ceramics

DOEpatents

Becher, Paul F.; Tiegs, Terry N.

1987-01-01

The flexural strength and/or fracture toughness of SiC whisker-reinforced composites utilizing mullite or alumina as the matrix material for the composite are increased by the addition of zirconia in a monoclinic or tetragonal phase to the matrix. The zirconia addition also provides for a lower hot-pressing temperature and increases the flexural strength and/or fracture toughness of the SiC whisker-reinforced composites over SiC whisker-reinforced composites of the similar matrix materials reinforced with similar concentrations of SiC whiskers.

Multi-Kilovolt Solid-State Picosecond Switch Studies

DTIC Science & Technology

2013-06-01

waveforms for the SiC device. Figure 7 shows the nanosecond driving pulse and the delayed avalanche breakdown of the SiC device. The driving...of the sharpened pulse RS VS VOLTAGE SOURCE TEST DEVICE VOLTAGE MONITOR R1 R2 TO SCOPE Figure 6. Simplified SiC avalanche diode test setup 0 2 4...Measured waveforms showing nanosecond driving pulse and subnanosecond delayed avalanche dreakdown of SiC device 50 µm 75 µm 10 µm p+ n+n Anode Cathode

Modeling and Simulation of Ceramic Arrays to Improve Ballistic Performance

DTIC Science & Technology

2014-03-01

30cal AP M2 Projectile, 762x39 PS Projectile, SPH , Aluminum 5083, SiC, DoP Expeminets, AutoDyn Sin 16. SECURITY CLASSIFICATION OF: UU a. REPORT b...projectile and are modeled using SPH elements in AutoDyn □ Center strike model validation runs with SiC tiles are conducted based on the DOP...Smoothed-particle hydrodynamics ( SPH ) used for all parts, SPH Size = 0.2 3 SiC and SiC 2 are identical in properties and dimensions

Performance evaluation of a high power DC-DC boost converter for PV applications using SiC power devices

NASA Astrophysics Data System (ADS)

Almasoudi, Fahad M.; Alatawi, Khaled S.; Matin, Mohammad

2016-09-01

The development of Wide band gap (WBG) power devices has been attracted by many commercial companies to be available in the market because of their enormous advantages over the traditional Si power devices. An example of WBG material is SiC, which offers a number of advantages over Si material. For example, SiC has the ability of blocking higher voltages, reducing switching and conduction losses and supports high switching frequency. Consequently, SiC power devices have become the affordable choice for high frequency and power application. The goal of this paper is to study the performance of 4.5 kW, 200 kHz, 600V DC-DC boost converter operating in continuous conduction mode (CCM) for PV applications. The switching behavior and turn on and turn off losses of different switching power devices such as SiC MOSFET, SiC normally ON JFET and Si MOSFET are investigated and analyzed. Moreover, a detailed comparison is provided to show the overall efficiency of the DC-DC boost converter with different switching power devices. It is found that the efficiency of SiC power switching devices are higher than the efficiency of Si-based switching devices due to low switching and conduction losses when operating at high frequencies. According to the result, the performance of SiC switching power devices dominate the conventional Si power devices in terms of low losses, high efficiency and high power density. Accordingly, SiC power switching devices are more appropriate for PV applications where a converter of smaller size with high efficiency, and cost effective is required.

Assessment of Silicon Carbide Composites for Advanced Salt-Cooled Reactors

DOE Office of Scientific and Technical Information (OSTI.GOV)

Katoh, Yutai; Wilson, Dane F; Forsberg, Charles W

2007-09-01

The Advanced High-Temperature Reactor (AHTR) is a new reactor concept that uses a liquid fluoride salt coolant and a solid high-temperature fuel. Several alternative fuel types are being considered for this reactor. One set of fuel options is the use of pin-type fuel assemblies with silicon carbide (SiC) cladding. This report provides (1) an initial viability assessment of using SiC as fuel cladding and other in-core components of the AHTR, (2) the current status of SiC technology, and (3) recommendations on the path forward. Based on the analysis of requirements, continuous SiC fiber-reinforced, chemically vapor-infiltrated SiC matrix (CVI SiC/SiC) compositesmore » are recommended as the primary option for further study on AHTR fuel cladding among various industrially available forms of SiC. Critical feasibility issues for the SiC-based AHTR fuel cladding are identified to be (1) corrosion of SiC in the candidate liquid salts, (2) high dose neutron radiation effects, (3) static fatigue failure of SiC/SiC, (4) long-term radiation effects including irradiation creep and radiation-enhanced static fatigue, and (5) fabrication technology of hermetic wall and sealing end caps. Considering the results of the issues analysis and the prospects of ongoing SiC research and development in other nuclear programs, recommendations on the path forward is provided in the order or priority as: (1) thermodynamic analysis and experimental examination of SiC corrosion in the candidate liquid salts, (2) assessment of long-term mechanical integrity issues using prototypical component sections, and (3) assessment of high dose radiation effects relevant to the anticipated operating condition.« less

Deep Etching Process Developed for the Fabrication of Silicon Carbide Microsystems

NASA Technical Reports Server (NTRS)

Beheim, Glenn M.

2000-01-01

Silicon carbide (SiC), because of its superior electrical and mechanical properties at elevated temperatures, is a nearly ideal material for the microminiature sensors and actuators that are used in harsh environments where temperatures may reach 600 C or greater. Deep etching using plasma methods is one of the key processes used to fabricate silicon microsystems for more benign environments, but SiC has proven to be a more difficult material to etch, and etch depths in SiC have been limited to several micrometers. Recently, the Sensors and Electronics Technology Branch at the NASA Glenn Research Center at Lewis Field developed a plasma etching process that was shown to be capable of etching SiC to a depth of 60 mm. Deep etching of SiC is achieved by inductive coupling of radiofrequency electrical energy to a sulfur hexafluoride (SF6) plasma to direct a high flux of energetic ions and reactive fluorine atoms to the SiC surface. The plasma etch is performed at a low pressure, 5 mtorr, which together with a high gas throughput, provides for rapid removal of the gaseous etch products. The lateral topology of the SiC microstructure is defined by a thin film of etch-resistant material, such as indium-tin-oxide, which is patterned using conventional photolithographic processes. Ions from the plasma bombard the exposed SiC surfaces and supply the energy needed to initiate a reaction between SiC and atomic fluorine. In the absence of ion bombardment, no reaction occurs, so surfaces perpendicular to the wafer surface (the etch sidewalls) are etched slowly, yielding the desired vertical sidewalls.

Modeling the Elastic Modulus of 2D Woven CVI SiC Composites

NASA Technical Reports Server (NTRS)

Morscher, Gregory N.

2006-01-01

The use of fiber, interphase, CVI SiC minicomposites as structural elements for 2D-woven SiC fiber reinforced chemically vapor infiltrated (CVI) SiC matrix composites is demonstrated to be a viable approach to model the elastic modulus of these composite systems when tensile loaded in an orthogonal direction. The 0deg (loading direction) and 90deg (perpendicular to loading direction) oriented minicomposites as well as the open porosity and excess SiC associated with CVI SiC composites were all modeled as parallel elements using simple Rule of Mixtures techniques. Excellent agreement for a variety of 2D woven Hi-Nicalon(TradeMark) fiber-reinforced and Sylramic-iBN reinforced CVI SiC matrix composites that differed in numbers of plies, constituent content, thickness, density, and number of woven tows in either direction (i.e, balanced weaves versus unbalanced weaves) was achieved. It was found that elastic modulus was not only dependent on constituent content, but also the degree to which 90deg minicomposites carried load. This depended on the degree of interaction between 90deg and 0deg minicomposites which was quantified to some extent by composite density. The relationships developed here for elastic modulus only necessitated the knowledge of the fractional contents of fiber, interphase and CVI SiC as well as the tow size and shape. It was concluded that such relationships are fairly robust for orthogonally loaded 2D woven CVI SiC composite system and can be implemented by ceramic matrix composite component modelers and designers for modeling the local stiffness in simple or complex parts fabricated with variable constituent contents.

Prevalence of Complement-Mediated Cell Lysis-like Gene (sicG) in Streptococcus dysgalactiae subsp. equisimilis Isolates From Japan (2014-2016).

PubMed

Takahashi, Takashi; Fujita, Tomohiro; Shibayama, Akiyoshi; Tsuyuki, Yuzo; Yoshida, Haruno

2017-07-01

Streptococcus dysgalactiae subsp. equisimilis (SDSE; a β-hemolytic streptococcus of human or animal origin) infections are emerging worldwide. We evaluated the clonal distribution of complement-mediated cell lysis-like gene (sicG) among SDSE isolates from three central prefectures of Japan. Group G/C β-hemolytic streptococci were collected from three institutions from April 2014 to March 2016. Fifty-five strains (52 from humans and three from animals) were identified as SDSE on the basis of 16S rRNA sequencing data.; they were obtained from 25 sterile (blood, joint fluid, and cerebrospinal fluid) and 30 non-sterile (skin-, respiratory tract-, and genitourinary tract-origin) samples. emm genotyping, multilocus sequence typing, sicG amplification/sequencing, and random amplified polymorphic DNA (RAPD) analysis of sicG-positive strains were performed. sicG was detected in 30.9% of the isolates (16 human and one canine) and the genes from the 16 human samples (blood, 10; open pus, 3; sputum, 2; throat swab, 1) and one canine sample (open pus) showed the same sequence pattern. All sicG-harboring isolates belonged to clonal complex (CC) 17, and the most prevalent emm type was stG6792 (82.4%). There was a significant association between sicG presence and the development of skin/soft tissue infections. CC17 isolates with sicG could be divided into three subtypes by RAPD analysis. CC17 SDSE harboring sicG might have spread into three closely-related prefectures in central Japan during 2014-2016. Clonal analysis of isolates from other areas might be needed to monitor potentially virulent strains in humans and animals. © The Korean Society for Laboratory Medicine

Distribution of Pd, Ag & U in the SiC Layer of an Irradiated TRISO Fuel Particle

DOE Office of Scientific and Technical Information (OSTI.GOV)

Thomas M. Lillo; Isabella J. van Rooyen

2014-08-01

The distribution of silver, uranium and palladium in the silicon carbide (SiC) layer of an irradiated TRISO fuel particle was studied using samples extracted from the SiC layer using focused ion beam (FIB) techniques. Transmission electron microscopy in conjunction with energy dispersive x-ray spectroscopy was used to identify the presence of the specific elements of interest at grain boundaries, triple junctions and precipitates in the interior of SiC grains. Details on sample fabrication, errors associated with measurements of elemental migration distances and the distances migrated by silver, palladium and uranium in the SiC layer of an irradiated TRISO particle frommore » the AGR-1 program are reported.« less

Silicon carbide semiconductor device fabrication and characterization

NASA Technical Reports Server (NTRS)

Davis, R. F.; Das, K.

1990-01-01

A number of basic building blocks i.e., rectifying and ohmic contacts, implanted junctions, MOS capacitors, pnpn diodes and devices, such as, MESFETs on both alpha and beta SiC films were fabricated and characterized. Gold forms a rectifying contact on beta SiC. Since Au contacts degrade at high temperatures, these are not considered to be suitable for high temperature device applications. However, it was possible to utilize Au contact diodes for electrically characterizing SiC films. Preliminary work indicates that sputtered Pt or Pt/Si contacts on beta SiC films are someways superior to Au contacts. Sputtered Pt layers on alpha SiC films form excellent rectifying contacts, whereas Ni layers following anneal at approximately 1050 C provide an ohmic contact. It has demonstrated that ion implantation of Al in substrates held at 550 C can be successfully employed for the fabrication of rectifying junction diodes. Feasibility of fabricating pnpn diodes and platinum gated MESFETs on alpha SiC films was also demonstrated.

Controlled epitaxial graphene growth within removable amorphous carbon corrals

DOE Office of Scientific and Technical Information (OSTI.GOV)

Palmer, James; Hu, Yike; Hankinson, John

2014-07-14

We address the question of control of the silicon carbide (SiC) steps and terraces under epitaxial graphene on SiC and demonstrate amorphous carbon (aC) corrals as an ideal method to pin SiC surface steps. aC is compatible with graphene growth, structurally stable at high temperatures, and can be removed after graphene growth. For this, aC is first evaporated and patterned on SiC, then annealed in the graphene growth furnace. There at temperatures above 1200 °C, mobile SiC steps accumulate at the aC corral that provide effective step flow barriers. Aligned step free regions are thereby formed for subsequent graphene growth atmore » temperatures above 1330 °C. Atomic force microscopy imaging supports the formation of step-free terraces on SiC with the step morphology aligned to the aC corrals. Raman spectroscopy indicates the presence of good graphene sheets on the step-free terraces.« less

InP-based photonic integrated circuit platform on SiC wafer.

PubMed

Takenaka, Mitsuru; Takagi, Shinichi

2017-11-27

We have numerically investigated the properties of an InP-on-SiC wafer as a photonic integrated circuit (PIC) platform. By bonding a thin InP-based semiconductor on a SiC wafer, SiC can be used as waveguide cladding, a heat sink, and a support substrate simultaneously. Since the refractive index of SiC is sufficiently low, PICs can be fabricated using InP-based strip and rib waveguides with a minimum bend radius of approximately 7 μm. High-thermal-conductivity SiC underneath an InP-based waveguide core markedly improves heat dissipation, resulting in superior thermal properties of active devices such as laser diodes. The InP-on-SiC wafer has significantly smaller thermal stress than InP-on-SiO 2 /Si wafer, which prevents the thermal degradation of InP-based devices during high-temperature processes. Thus, InP on SiC provides an ideal platform for high-performance PICs.

Freestanding ultrathin single-crystalline SiC substrate by MeV H ion-slicing

NASA Astrophysics Data System (ADS)

Jia, Qi; Huang, Kai; You, Tiangui; Yi, Ailun; Lin, Jiajie; Zhang, Shibin; Zhou, Min; Zhang, Bin; Zhang, Bo; Yu, Wenjie; Ou, Xin; Wang, Xi

2018-05-01

SiC is a widely used wide-bandgap semiconductor, and the freestanding ultrathin single-crystalline SiC substrate provides the material platform for advanced devices. Here, we demonstrate the fabrication of a freestanding ultrathin single-crystalline SiC substrate with a thickness of 22 μm by ion slicing using 1.6 MeV H ion implantation. The ion-slicing process performed in the MeV energy range was compared to the conventional case using low-energy H ion implantation in the keV energy range. The blistering behavior of the implanted SiC surface layer depends on both the implantation temperature and the annealing temperature. Due to the different straggling parameter for two implant energies, the distribution of implantation-induced damage is significantly different. The impact of implantation temperature on the high-energy and low-energy slicing was opposite, and the ion-slicing SiC in the MeV range initiates at a much higher temperature.

Correlated Si isotope anomalies and large C-13 enrichments in a family of exotic SiC grains

NASA Technical Reports Server (NTRS)

Stone, J.; Hutcheon, I. D.; Epstein, S.; Wasserburg, G. J.

1991-01-01

A hypothesis is presented to the effect that the distinctive morphological characteristics and comparatively simple Si isotope systematics identify the platy SiC crystals as a genetically related family, formed around a single isotopically heterogeneous presolar star on an association of related stars. The enrichments in C-13 and the Si isotope systematics of the platy SiC are broadly consistent with theoretical models of nucleosynthesis in low-mass, carbon stars on the ASG. The Si isotope array most plausibly reflects mixing between (Si-28)-rich material, inherited from a previous generation of stars, and material enriched in Si-29 and Si-30, produced in intershell regions by neutron capture during He-burning. The absence of a correlation between the Si and C isotopic compositions of the SiC suggests either episodic condensation of SiC, extending over several thermal pulses, in the atmosphere of a single star, or the derivation of the SiC from several stars characterized by different rates of C-13 production.

Hysteresis in the Active Oxidation of SiC

NASA Technical Reports Server (NTRS)

Jacobson, Nathan S.; Harder, Bryan J.; Myers, Dwight L.

2011-01-01

Si and SiC show both passive oxidation behavior where a protective film of SiO2 forms and active oxidation behavior where a volatile suboxide SiO(g) forms. The active-to-passive and passive-to-active oxidation transitions are explored for both Si and SiC. Si shows a dramatic difference between the P(O2) for the two transitions of 10-4 bar. The active-to-passive transition is controlled by the condition for SiO2/Si equilibrium and the passive-to-active transition is controlled by the decomposition of SiO2. In the case of SiC, the P(O2) for these transitions are much closer. The active-to-passive transition appears to be controlled by the condition for SiO2/SiC equilibrium. The passive-to-active transition appears to be controlled by the interfacial reaction of SiC and SiO2 and subsequent generation of gases at the interface which leads to scale breakdown.

Effect of Copper Coated SiC Reinforcements on Microstructure, Mechanical Properties and Wear of Aluminium Composites

NASA Astrophysics Data System (ADS)

Kori, P. S.; Vanarotti, Mohan; Angadi, B. M.; Nagathan, V. V.; Auradi, V.; Sakri, M. I.

2017-08-01

Experimental investigations are carried out to study the influence of copper coated Silicon carbide (SiC) reinforcements in Aluminum (Al) based Al-SiC composites. Wear behavior and mechanical Properties like, ultimate tensile strength (UTS) and hardness are studied in the present work. Experimental results clearly revealed that, an addition of SiC particles (5, 10 and 15 Wt %) has lead in the improvement of hardness and ultimate tensile strength. Al-SiC composites containing the Copper coated SiC reinforcements showed better improvement in mechanical properties compared to uncoated ones. Characterization of Al-SiC composites are carried out using optical photomicrography and SEM analysis. Wear tests are carried out to study the effects of composition and normal pressure using Pin-On Disc wear testing machine. Results suggested that, wear rate decreases with increasing SiC composition, further an improvement in wear resistance is observed with copper coated SiC reinforcements in the Al-SiC metal matrix composites (MMC’s).

Extreme temperature robust optical sensor designs and fault-tolerant signal processing

DOEpatents

Riza, Nabeel Agha [Oviedo, FL; Perez, Frank [Tujunga, CA

2012-01-17

Silicon Carbide (SiC) probe designs for extreme temperature and pressure sensing uses a single crystal SiC optical chip encased in a sintered SiC material probe. The SiC chip may be protected for high temperature only use or exposed for both temperature and pressure sensing. Hybrid signal processing techniques allow fault-tolerant extreme temperature sensing. Wavelength peak-to-peak (or null-to-null) collective spectrum spread measurement to detect wavelength peak/null shift measurement forms a coarse-fine temperature measurement using broadband spectrum monitoring. The SiC probe frontend acts as a stable emissivity Black-body radiator and monitoring the shift in radiation spectrum enables a pyrometer. This application combines all-SiC pyrometry with thick SiC etalon laser interferometry within a free-spectral range to form a coarse-fine temperature measurement sensor. RF notch filtering techniques improve the sensitivity of the temperature measurement where fine spectral shift or spectrum measurements are needed to deduce temperature.

Dimensional stability and anisotropy of SiC and SiC-based composites in transition swelling regime

DOE Office of Scientific and Technical Information (OSTI.GOV)

Katoh, Yutai; Koyanagi, Takaaki; McDuffee, Joel L.

Swelling, or volumetric expansion, is an inevitable consequence of the atomic displacement damage in crystalline silicon carbide (SiC) caused by energetic neutron irradiation. Because of its steep temperature and dose dependence, understanding swelling is essential for designing SiC-based components for nuclear applications. Here in this study, swelling behaviors of monolithic CVD SiC and nuclear grade SiC fiber – SiC matrix (SiC/SiC) composites were accurately determined, supported by the irradiation temperature determination for individual samples, following neutron irradiation within the lower transition swelling temperature regime. Slightly anisotropic swelling behaviors were found for the SiC/SiC samples and attributed primarily to the combinedmore » effects of the pre-existing microcracking, fiber architecture, and specimen dimension. A semi-empirical model of SiC swelling was calibrated and presented. Finally, implications of the refined model to selected swelling-related issues for SiC-based nuclar reactor components are discussed.« less

Dimensional stability and anisotropy of SiC and SiC-based composites in transition swelling regime

DOE PAGES

Katoh, Yutai; Koyanagi, Takaaki; McDuffee, Joel L.; ...

2017-12-08

Swelling, or volumetric expansion, is an inevitable consequence of the atomic displacement damage in crystalline silicon carbide (SiC) caused by energetic neutron irradiation. Because of its steep temperature and dose dependence, understanding swelling is essential for designing SiC-based components for nuclear applications. Here in this study, swelling behaviors of monolithic CVD SiC and nuclear grade SiC fiber – SiC matrix (SiC/SiC) composites were accurately determined, supported by the irradiation temperature determination for individual samples, following neutron irradiation within the lower transition swelling temperature regime. Slightly anisotropic swelling behaviors were found for the SiC/SiC samples and attributed primarily to the combinedmore » effects of the pre-existing microcracking, fiber architecture, and specimen dimension. A semi-empirical model of SiC swelling was calibrated and presented. Finally, implications of the refined model to selected swelling-related issues for SiC-based nuclar reactor components are discussed.« less

DOE Office of Scientific and Technical Information (OSTI.GOV)

Wen, Haiming; van Rooyen, Isabella J.

Here, detailed electron microscopy studies were performed to investigate the distribution and composition of fission products in the SiC layer of a tristructural isotropic coated particle exhibiting localized corrosion. Previous studies on this particle indicated that pure carbon areas in the SiC layer, resulting from localized corrosion of SiC by Pd, provide pathways for Ag, Cd and Cs migration. This study reveals the presence of Ag- and/or Cd-containing precipitates in un-corroded SiC areas. Ag/Cd may exist by themselves or coexist with Pd. Ag/Cd mainly transport along SiC grain boundaries. An Ag-Pd-Cd precipitate was identified at a stacking fault inside amore » SiC grain, suggesting that intragranular transport of Ag/Cd is possible. Ce is present with Pd or Pd-U in some precipitates >50 nm. U and Ce frequently coexist with each other, whereas Ag/Cd usually does not coexist with U or Ce. No Cs was detected in any precipitates in the areas examined.« less

Chemical Corrosion of Liquid-Phase Sintered SiC in Acidic/Alkaline Solutions Part 1. Corrosion in HNO3 Solution

NASA Astrophysics Data System (ADS)

Zhang, Lei; Zhang, Ming; He, Xinnong; Tang, Wenming

2016-03-01

The corrosion behavior of the liquid-phase sintered SiC (LPS-SiC) was studied by dipping in 3.53 mol/L HNO3 aqueous solution at room temperature and 70 °C, respectively. The weight loss, strength reduction and morphology evolution of the SiC specimens during corroding were revealed and also the chemical corrosion process and mechanism of the SiC specimens in the acidic solution were clarified. The results show that the corrosion of the LPS-SiC specimens in the HNO3 solution is selective. The SiC particles are almost free from corrosion, but the secondary phases of BaAl2Si2O8 (BAS) and Y2Si2O7 are corroded via an acid-alkali neutralization reaction. BAS has a higher corrosion rate than Y2Si2O7, resulting in the formation of the bamboo-leaf-like corrosion pits. As the SiC specimens etched in the HNO3 solution at room temperature for 75 days, about 80 μm thickness corrosion layer forms. The weight loss and bending strength reduction of the etched SiC specimens are 2.6 mg/cm2 and 52%, respectively. The corrosion of the SiC specimens is accelerated in the 70 °C HNO3 solution with a rate about five times bigger than that in the same corrosion medium at room temperature.

Assessment of On-Site Power Opportunities in the Industrial Sector

DOE Office of Scientific and Technical Information (OSTI.GOV)

Bryson, T.

2001-10-08

The purpose of this report is to identify the potential for on-site power generation in the U.S. industrial sector with emphasis on nine industrial groups called the ''Industries of the Future'' (IOFs) by the U.S. Department of Energy (DOE). Through its Office of Industrial Technologies (OIT), the DOE has teamed with the IOFs to develop collaborative strategies for improving productivity, global competitiveness, energy usage and environmental performance. Total purchases for electricity and steam for the IOFs are in excess of $27 billion annually. Energy-related costs are very significant for these industries. The nine industrial groups are (1) Agriculture (SIC 1);more » (2) Forest products; (3) Lumber and wood products (SIC 24); (4) Paper and allied products (SIC 26); (5) Mining (SIC 11, 12, 14); (6) Glass (SIC 32); (7) Petroleum (SIC 29); (8) Chemicals (SIC 28); and (9) Metals (SIC 33): Steel, Aluminum, and Metal casting. Although not currently part of the IOF program, the food industry is included in this report because of its close relationship to the agricultural industry and its success with on-site power generation. On-site generation provides an alternative means to reduce energy costs, comply with environmental regulations, and ensure a reliable power supply. On-site generation can ease congestion in the local utility's electric grid. Electric market restructuring is exacerbating the price premium for peak electricity use and for reliability, creating considerable market interest in on-site generation.« less

Historical and New Perspective of Moissanite in the Canyon Diablo Meteorite

NASA Astrophysics Data System (ADS)

Leung, I. S.; Winston, R.

2004-12-01

Silicon carbide (SiC) was reportedly found in the residue of a 50-kg sample of the Canyon Diablo meteorite dissolved in acid by Henri Moissan, and, in his honor, George F. Kunz coined the mineral name moissanite in 1904. Scholars of the same meteorite, unable to find SiC, believed that Moissan's sample might have been contaminated by synthetic SiC used in tools and abrasives. Thus, an intriguing mineralogical controversy ensued to this day. Recently, occurrence of SiC in carbonaceous chondrites has been confirmed. We present in this paper our finding of three varieties of SiC crystals in the Canyon Diablo meteorite. We found 5 crystals of SiC (size 70-150 microns) in a black nodule (1 cm in size), composed mostly of disordered graphite and diamond/lonsdaleite. The crystals are pale blue, but some have dark overgrowths of uneven thickness, and black spotty or feathery inclusions. Their forms are rounded and resorbed. Our second specimen is oxidized and friable, bearing a 2-cm nodule showing sandy and black magnetic layers. We found 3 apple-green crystals, up to 200 microns in size. Scattered over two of the sandy layers are many minute emerald-green SiC crystals. Carbon in these crystals might have a terrestrial origin. As Moissan's crystals are no longer available for re-examination, a study of large carbon nodules housed in museums might at least lend credence that meteoritic SiC crystals could be as large as ones reported by Moissan.

Advanced Packaging Technology Used in Fabricating a High-Temperature Silicon Carbide Pressure Sensor

NASA Technical Reports Server (NTRS)

Beheim, Glenn M.

2003-01-01

The development of new aircraft engines requires the measurement of pressures in hot areas such as the combustor and the final stages of the compressor. The needs of the aircraft engine industry are not fully met by commercially available high-temperature pressure sensors, which are fabricated using silicon. Kulite Semiconductor Products and the NASA Glenn Research Center have been working together to develop silicon carbide (SiC) pressure sensors for use at high temperatures. At temperatures above 850 F, silicon begins to lose its nearly ideal elastic properties, so the output of a silicon pressure sensor will drift. SiC, however, maintains its nearly ideal mechanical properties to extremely high temperatures. Given a suitable sensor material, a key to the development of a practical high-temperature pressure sensor is the package. A SiC pressure sensor capable of operating at 930 F was fabricated using a newly developed package. The durability of this sensor was demonstrated in an on-engine test. The SiC pressure sensor uses a SiC diaphragm, which is fabricated using deep reactive ion etching. SiC strain gauges on the surface of the diaphragm sense the pressure difference across the diaphragm. Conventionally, the SiC chip is mounted to the package with the strain gauges outward, which exposes the sensitive metal contacts on the chip to the hostile measurement environment. In the new Kulite leadless package, the SiC chip is flipped over so that the metal contacts are protected from oxidation by a hermetic seal around the perimeter of the chip. In the leadless package, a conductive glass provides the electrical connection between the pins of the package and the chip, which eliminates the fragile gold wires used previously. The durability of the leadless SiC pressure sensor was demonstrated when two 930 F sensors were tested in the combustor of a Pratt & Whitney PW4000 series engine. Since the gas temperatures in these locations reach 1200 to 1300 F, the sensors were installed in water-cooled jackets, as shown. This was a severe test because the pressure-sensing chips were exposed to the hot combustion gases. Prior to the installation of the SiC pressure sensors, two high-temperature silicon sensors, installed in the same locations, did not survive a single engine run. The durability of the leadless SiC pressure sensor was demonstrated when both SiC sensors operated properly throughout the two runs that were conducted.

Reliability Concerns for Flying SiC Power MOSFETs in Space

NASA Technical Reports Server (NTRS)

Galloway, K. F.; Witulski, A. F.; Schrimpf, R. D.; Sternberg, A. L.; Ball, D. R.; Javanainen, A.; Reed, R. A.; Sierawski, B. D.; Lauenstein, J.-M.

2018-01-01

SiC power MOSFETs are space-ready in terms of typical reliability measures. However, single event burnout (SEB) often occurs at voltages 50% or lower than specified breakdown. Data illustrating burnout for 1200 V devices is reviewed and the space reliability of SiC MOSFETs is discussed.

29 CFR 510.21 - SIC codes.

Code of Federal Regulations, 2010 CFR

2010-07-01

... 29 Labor 3 2010-07-01 2010-07-01 false SIC codes. 510.21 Section 510.21 Labor Regulations Relating to Labor (Continued) WAGE AND HOUR DIVISION, DEPARTMENT OF LABOR REGULATIONS IMPLEMENTATION OF THE... Classification of Industries § 510.21 SIC codes. (a) The Conference Report specifically cites Puerto Rico's...

Simplification of the time-dependent generalized self-interaction correction method using two sets of orbitals: Application of the optimized effective potential formalism

DOE Office of Scientific and Technical Information (OSTI.GOV)

Messud, J.; Dinh, P. M.; Suraud, Eric

2009-10-15

We propose a simplification of the time-dependent self-interaction correction (TD-SIC) method using two sets of orbitals, applying the optimized effective potential (OEP) method. The resulting scheme is called time-dependent 'generalized SIC-OEP'. A straightforward approximation, using the spatial localization of one set of orbitals, leads to the 'generalized SIC-Slater' formalism. We show that it represents a great improvement compared to the traditional SIC-Slater and Krieger-Li-Iafrate formalisms.

Simplification of the time-dependent generalized self-interaction correction method using two sets of orbitals: Application of the optimized effective potential formalism

NASA Astrophysics Data System (ADS)

Messud, J.; Dinh, P. M.; Reinhard, P.-G.; Suraud, Eric

2009-10-01

We propose a simplification of the time-dependent self-interaction correction (TD-SIC) method using two sets of orbitals, applying the optimized effective potential (OEP) method. The resulting scheme is called time-dependent “generalized SIC-OEP.” A straightforward approximation, using the spatial localization of one set of orbitals, leads to the “generalized SIC-Slater” formalism. We show that it represents a great improvement compared to the traditional SIC-Slater and Krieger-Li-Iafrate formalisms.

A Novel Polymeric Organosilazane Precursor to Si3N4/SiC Ceramics.

DTIC Science & Technology

1985-02-06

prepared by pyrolysis of the appropriately-shaped polymeric precursor. These polysilazanes also may prove to be useful as dispersants for SiC and Si3N4...I[AD-Ri58 748 A NOVEL POLYMERIC ORGANOSILAZANE PRECURSOR TO S13N4/ SIC i/I CERRMICS(U) MASSACHUSETTS INST OF TECH CAMBRIDGE DEPT OF CHEMISTRY D...Security C ificatlion" 0322 A Novel Polymeric Organosilazane Precursor to Si3N/ SiC C_ramics._I 12. PERSONAL AUTHOR(S) Dietmar Seyferth and Gary H. Wiseman 13

A New Method to Grow SiC: Solvent-Laser Heated Floating Zone

NASA Technical Reports Server (NTRS)

Woodworth, Andrew A.; Neudeck, Philip G.; Sayir, Ali

2012-01-01

The solvent-laser heated floating zone (solvent-LHFZ) growth method is being developed to grow long single crystal SiC fibers. The technique combines the single crystal fiber growth ability of laser heated floating zone with solvent based growth techniques (e.g. traveling solvent method) ability to grow SiC from the liquid phase. Initial investigations reported in this paper show that the solvent-LHFZ method readily grows single crystal SiC (retains polytype and orientation), but has a significant amount of inhomogeneous strain and solvent rich inclusions.

Effects of UV light intensity on electrochemical wet etching of SiC for the fabrication of suspended graphene

NASA Astrophysics Data System (ADS)

O, Ryong-Sok; Takamura, Makoto; Furukawa, Kazuaki; Nagase, Masao; Hibino, Hiroki

2015-03-01

We report on the effects of UV light intensity on the photo assisted electrochemical wet etching of SiC(0001) underneath an epitaxially grown graphene for the fabrication of suspended structures. The maximum etching rate of SiC(0001) was 2.5 µm/h under UV light irradiation in 1 wt % KOH at a constant current of 0.5 mA/cm2. The successful formation of suspended structures depended on the etching rate of SiC. In the Raman spectra of the suspended structures, we did not observe a significant increase in the intensity of the D peak, which originates from defects in graphene sheets. This is most likely explained by the high quality of the single-crystalline graphene epitaxially grown on SiC.

An Extension of SIC Predictions to the Wiener Coactive Model

PubMed Central

Houpt, Joseph W.; Townsend, James T.

2011-01-01

The survivor interaction contrasts (SIC) is a powerful measure for distinguishing among candidate models of human information processing. One class of models to which SIC analysis can apply are the coactive, or channel summation, models of human information processing. In general, parametric forms of coactive models assume that responses are made based on the first passage time across a fixed threshold of a sum of stochastic processes. Previous work has shown that that the SIC for a coactive model based on the sum of Poisson processes has a distinctive down-up-down form, with an early negative region that is smaller than the later positive region. In this note, we demonstrate that a coactive process based on the sum of two Wiener processes has the same SIC form. PMID:21822333

An Extension of SIC Predictions to the Wiener Coactive Model.

PubMed

Houpt, Joseph W; Townsend, James T

2011-06-01

The survivor interaction contrasts (SIC) is a powerful measure for distinguishing among candidate models of human information processing. One class of models to which SIC analysis can apply are the coactive, or channel summation, models of human information processing. In general, parametric forms of coactive models assume that responses are made based on the first passage time across a fixed threshold of a sum of stochastic processes. Previous work has shown that that the SIC for a coactive model based on the sum of Poisson processes has a distinctive down-up-down form, with an early negative region that is smaller than the later positive region. In this note, we demonstrate that a coactive process based on the sum of two Wiener processes has the same SIC form.

Toxicity assessment of SiC nanofibers and nanorods against bacteria.

PubMed

Szala, Mateusz; Borkowski, Andrzej

2014-02-01

In the present study, evidence of the antibacterial effects of silicon carbide (SiC) nanofibers (NFSiC) and nanorods (NRSiC) obtained by combustion synthesis has been presented. It has been shown that the examined bacteria, Pseudomonas putida, could bind to the surface of the investigated SiC nanostructures. The results of respiration measurements, dehydrogenase activity measurements, and evaluation of viable bacteria after incubation with NFSiC and NRSiC demonstrated that the nanostructures of SiC affect the growth and activity of the bacteria examined. The direct count of bacteria stained with propidium iodide after incubation with SiC nanostructures revealed that the loss of cell membrane integrity could be one of the main effects leading to the death of the bacteria. © 2013 Published by Elsevier Inc.

On the melt infiltration of copper coated silicon carbide with an aluminium alloy

NASA Technical Reports Server (NTRS)

Asthana, R.; Rohatgi, P. K.

1992-01-01

Pressure-assisted infiltration of porous compacts of Cu coated and uncoated single crystals of platelet shaped alpha (hexagonal) SiC was used to study infiltration dynamics and particulate wettability with a 2014 Al alloy. The infiltration lengths were measured for a range of experimental variables which included infiltration pressure, infiltration time, and SiC size. A threshold pressure (P(th)) for flow initiation through compacts was identified from an analysis of infiltration data; P(th) decreased while penetration lengths increased with increasing SiC size (more fundamentally, due to changes in interparticle pore size) and with increasing infiltration times. Cu coated SiC led to lower P(th) and 60-80 percent larger penetration lengths compared to uncoated SiC under identical processing conditions.

Hydrothermal corrosion of silicon carbide joints without radiation

DOE PAGES

Koyanagi, Takaaki; Katoh, Yutai; Terrani, Kurt A.; ...

2016-09-28

In this paper, hydrothermal corrosion of four types of the silicon carbide (SiC) to SiC plate joints were investigated under pressurized water reactor and boiling water reactor relevant chemical conditions without irradiation. The joints were formed by metal diffusion bonding using molybdenum or titanium interlayer, reaction sintering using Ti—Si—C system, and SiC nanopowder sintering. Most of the joints withstood the corrosion tests for five weeks. The recession of the SiC substrates was limited. Based on the recession of the bonding layers, it was concluded that all the joints except for the molybdenum diffusion bond are promising under the reducing environmentsmore » without radiation. Finally, the SiC nanopowder sintered joint was the most corrosion tolerant under the oxidizing environment among the four joints.« less

Power monitoring in space nuclear reactors using silicon carbide radiation detectors

NASA Technical Reports Server (NTRS)

Ruddy, Frank H.; Patel, Jagdish U.; Williams, John G.

2005-01-01

Space reactor power monitors based on silicon carbide (SiC) semiconductor neutron detectors are proposed. Detection of fast leakage neutrons using SiC detectors in ex-core locations could be used to determine reactor power: Neutron fluxes, gamma-ray dose rates and ambient temperatures have been calculated as a function of distance from the reactor core, and the feasibility of power monitoring with SiC detectors has been evaluated at several ex-core locations. Arrays of SiC diodes can be configured to provide the required count rates to monitor reactor power from startup to full power Due to their resistance to temperature and the effects of neutron and gamma-ray exposure, SiC detectors can be expected to provide power monitoring information for the fill mission of a space reactor.

A comparative study of the mechanical and thermal properties of defective ZrC, TiC and SiC.

PubMed

Jiang, M; Zheng, J W; Xiao, H Y; Liu, Z J; Zu, X T

2017-08-24

ZrC and TiC have been proposed to be alternatives to SiC as fuel-cladding and structural materials in nuclear reactors due to their strong radiation tolerance and high thermal conductivity at high temperatures. To unravel how the presence of defects affects the thermo-physical properties under irradiation, first-principles calculations based on density function theory were carried out to investigate the mechanical and thermal properties of defective ZrC, TiC and SiC. As compared with the defective SiC, the ZrC and TiC always exhibit larger bulk modulus, smaller changes in the Young's and shear moduli, as well as better ductility. The total thermal conductivity of ZrC and TiC are much larger than that of SiC, implying that under radiation environment the ZrC and TiC will exhibit superior heat conduction ability than the SiC. One disadvantage for ZrC and TiC is that their Debye temperatures are generally lower than that of SiC. These results suggest that further improving the Debye temperature of ZrC and TiC will be more beneficial for their applications as fuel-cladding and structural materials in nuclear reactors.

Strong visible electroluminescence from silicon nanocrystals embedded in a silicon carbide film

DOE Office of Scientific and Technical Information (OSTI.GOV)

Huh, Chul, E-mail: chuh@etri.re.kr; Kim, Tae-Youb; Ahn, Chang-Geun

2015-05-25

We report the strong visible light emission from silicon (Si) nanocrystals (NCs) embedded in a Si carbide (SiC) film. Compared to Si NC light-emitting diode (LED) by employing the Si nitride (SiN{sub x}) film as a surrounding matrix, the turn-on voltage of the Si NC LED with the SiC film was significantly decreased by 4 V. This was attributed to a smaller barrier height for injecting the electrons into the Si NCs due to a smaller band gap of SiC film than a SiN{sub x} film. The electroluminescence spectra increases with increasing forward voltage, indicating that the electrons are efficiently injectedmore » into the Si NCs in the SiC film. The light output power shows a linear increase with increasing forward voltage. The light emission originated from the Si NCs in a SiC film was quite uniform. The power efficiency of the Si NC LED with the SiC film was 1.56 times larger than that of the Si NC LED with the SiN{sub x} film. The Si NCs in a SiC film show unique advantages and are a promising candidate for application in optical devices.« less

The microstructures of SCS-6 and SCS-8 SiC reinforcing fibers

DOE Office of Scientific and Technical Information (OSTI.GOV)

Sattler, M.L.; Kinney, J.H.; Zywicz, E.

The microstructures of SCS-6 and SCS-8 SiC fibers have been examined and analyzed using high resolution transmission electron microscopy (HRTEM), microdiffraction, parallel electron energy loss spectroscopy (PEELS), x-ray diffraction and x-ray spectroscopy. The results of the study confirm findings from earlier studies wherein the microstructure of the fibers have been described as consisting of {beta}-SiC grown upon a monofilament turbostratic carbon core. The present study, however, provides much more detail regarding this microstructure. For example, PEELS spectroscopy and x-ray microscopy indicate that the composition of the SiC varies smoothly from SiC plus free C near the carbon core to SiCmore » at the midradial boundary. The SiC stoichiometry is roughly preserved from the midradial boundary to the exterior interface. HRTEM, microdiffraction, and dark field images provide evidence that the excess carbon is amorphous free carbon which is most likely situated at the grain boundaries of the SiC. The x-ray microscopy results are also consistent with the presence of two phases near the core which consist of SiC and free carbon having density less than graphite (2.25 g/cc). This complex microstructure may explain the recent observations of nonplanar failure in composites fabricated with SCS fibers.« less

Velcro-Inspired SiC Fuzzy Fibers for Aerospace Applications.

PubMed

Hart, Amelia H C; Koizumi, Ryota; Hamel, John; Owuor, Peter Samora; Ito, Yusuke; Ozden, Sehmus; Bhowmick, Sanjit; Syed Amanulla, Syed Asif; Tsafack, Thierry; Keyshar, Kunttal; Mital, Rahul; Hurst, Janet; Vajtai, Robert; Tiwary, Chandra Sekhar; Ajayan, Pulickel M

2017-04-19

The most recent and innovative silicon carbide (SiC) fiber ceramic matrix composites, used for lightweight high-heat engine parts in aerospace applications, are woven, layered, and then surrounded by a SiC ceramic matrix composite (CMC). To further improve both the mechanical properties and thermal and oxidative resistance abilities of this material, SiC nanotubes and nanowires (SiCNT/NWs) are grown on the surface of the SiC fiber via carbon nanotube conversion. This conversion utilizes the shape memory synthesis (SMS) method, starting with carbon nanotube (CNT) growth on the SiC fiber surface, to capitalize on the ease of dense surface morphology optimization and the ability to effectively engineer the CNT-SiC fiber interface to create a secure nanotube-fiber attachment. Then, by converting the CNTs to SiCNT/NWs, the relative morphology, advantageous mechanical properties, and secure connection of the initial CNT-SiC fiber architecture are retained, with the addition of high temperature and oxidation resistance. The resultant SiCNT/NW-SiC fiber can be used inside the SiC ceramic matrix composite for a high-heat turbo engine part with longer fatigue life and higher temperature resistance. The differing sides of the woven SiCNT/NWs act as the "hook and loop" mechanism of Velcro but in much smaller scale.

Light and Strong Hierarchical Porous SiC Foam for Efficient Electromagnetic Interference Shielding and Thermal Insulation at Elevated Temperatures.

PubMed

Liang, Caiyun; Wang, Zhenfeng; Wu, Lina; Zhang, Xiaochen; Wang, Huan; Wang, Zhijiang

2017-09-06

A novel light but strong SiC foam with hierarchical porous architecture was fabricated by using dough as raw material via carbonization followed by carbothermal reduction with silicon source. A significant synergistic effect is achieved by embedding meso- and nanopores in a microsized porous skeleton, which endows the SiC foam with high-performance electromagnetic interference (EMI) shielding, thermal insulation, and mechanical properties. The microsized skeleton withstands high stress. The meso- and nanosized pores enhance multiple reflection of the incident electromagnetic waves and elongate the path of heat transfer. For the hierarchical porous SiC foam with 72.8% porosity, EMI shielding can be higher than 20 dB, and specific EMI effectiveness exceeds 24.8 dB·cm 3 ·g -1 at a frequency of 11 GHz at 25-600 °C, which is 3 times higher than that of dense SiC ceramic. The thermal conductivity reaches as low as 0.02 W·m -1 ·K -1 , which is comparable to that of aerogel. The compressive strength is as high as 9.8 MPa. Given the chemical and high-temperature stability of SiC, the fabricated SiC foam is a promising candidate for modern aircraft and automobile applications.

Si/C hybrid nanostructures for Li-ion anodes: An overview

NASA Astrophysics Data System (ADS)

Terranova, Maria Letizia; Orlanducci, Silvia; Tamburri, Emanuela; Guglielmotti, Valeria; Rossi, Marco

2014-01-01

This review article summarizes recent and increasing efforts in the development of novel Li ion cell anode nanomaterials based on the coupling of C with Si. The rationale behind such efforts is based on the fact that the Si-C coupling realizes a favourable combination of the two materials properties, such as the high lithiation capacity of Si and the mechanical and conductive properties of C, making Si/C hybrid nanomaterials the ideal candidates for innovative and improved Li-ion anodes. Together with an overview of the methodologies proposed in the last decade for material preparation, a discussion on relationship between organization at the nanoscale of the hybrid Si/C systems and battery performances is given. An emerging indication is that the enhancement of the batteries efficiency in terms of mass capacity, energy density and cycling stability, resides in the ability to arrange Si/C bi-component nanostructures in pre-defined architectures. Starting from the results obtained so far, this paper aims to indicate some emerging directions and to inspire promising routes to optimize fabrication of Si/C nanomaterials and engineering of Li-ion anodes structures. The use of Si/C hybrid nanostructures could represents a viable and effective solution to the foreseen limits of present lithium ion technology.

Decomposition of silicon carbide at high pressures and temperatures

DOE Office of Scientific and Technical Information (OSTI.GOV)

Daviau, Kierstin; Lee, Kanani K. M.

We measure the onset of decomposition of silicon carbide, SiC, to silicon and carbon (e.g., diamond) at high pressures and high temperatures in a laser-heated diamond-anvil cell. We identify decomposition through x-ray diffraction and multiwavelength imaging radiometry coupled with electron microscopy analyses on quenched samples. We find that B3 SiC (also known as 3C or zinc blende SiC) decomposes at high pressures and high temperatures, following a phase boundary with a negative slope. The high-pressure decomposition temperatures measured are considerably lower than those at ambient, with our measurements indicating that SiC begins to decompose at ~ 2000 K at 60more » GPa as compared to ~ 2800 K at ambient pressure. Once B3 SiC transitions to the high-pressure B1 (rocksalt) structure, we no longer observe decomposition, despite heating to temperatures in excess of ~ 3200 K. The temperature of decomposition and the nature of the decomposition phase boundary appear to be strongly influenced by the pressure-induced phase transitions to higher-density structures in SiC, silicon, and carbon. The decomposition of SiC at high pressure and temperature has implications for the stability of naturally forming moissanite on Earth and in carbon-rich exoplanets.« less

Effects of SiC whiskers and particles on precipitation in aluminum matrix composites

NASA Astrophysics Data System (ADS)

Papazian, John M.

1988-12-01

The age-hardening precipitation reactions in aluminum matrix composites reinforced with discontinuous SiC were studied using a calorimetric technique. Composites fabricated with 2124, 2219, 6061, and 7475 alloy matrices were obtained from commercial sources along with unreinforced control materials fabricated in a similar manner. The 7475 materials were made by a casting process while the others were made by powder metallurgy: the SiC reinforcement was in the form of whiskers or particulate. It was found that the overall age-hardening sequence of the alloy was not changed by the addition of SiC, but that the volume fractions of various phases and the precipitation kinetics were substantially modified. Precipitation and dissolution kinetics were generally accelerated. A substantial portion of this acceleration was found to be due to the powder metallurgy process employed to make the composites, but the formation kinetics of some particular precipitate phases were also strongly affected by the presence of SiC. It was observed that the volume fraction of GP zones able to form in the SiC containing materials was significantly reduced. The presence of SiC particles also caused normally quench insensitive materials such as 6061 to become quench sensitive. The microstructural origins of these effects are discussed.

U.S. Department of Energy Accident Resistant SiC Clad Nuclear Fuel Development

DOE Office of Scientific and Technical Information (OSTI.GOV)

George W. Griffith

2011-10-01

A significant effort is being placed on silicon carbide ceramic matrix composite (SiC CMC) nuclear fuel cladding by Light Water Reactor Sustainability (LWRS) Advanced Light Water Reactor Nuclear Fuels Pathway. The intent of this work is to invest in a high-risk, high-reward technology that can be introduced in a relatively short time. The LWRS goal is to demonstrate successful advanced fuels technology that suitable for commercial development to support nuclear relicensing. Ceramic matrix composites are an established non-nuclear technology that utilizes ceramic fibers embedded in a ceramic matrix. A thin interfacial layer between the fibers and the matrix allows formore » ductile behavior. The SiC CMC has relatively high strength at high reactor accident temperatures when compared to metallic cladding. SiC also has a very low chemical reactivity and doesn't react exothermically with the reactor cooling water. The radiation behavior of SiC has also been studied extensively as structural fusion system components. The SiC CMC technology is in the early stages of development and will need to mature before confidence in the developed designs can created. The advanced SiC CMC materials do offer the potential for greatly improved safety because of their high temperature strength, chemical stability and reduced hydrogen generation.« less

New R-SiC extends service life in kiln furniture

DOE Office of Scientific and Technical Information (OSTI.GOV)

Sonntag, A.

1997-11-01

Silicon carbide kiln furniture systems are an essential part of modern high-temperature technology. SiC ceramics have exceptional high-temperature stability and thermal shock resistance., They show no plastic deformation (creep) under mechanical load and maintain their geometry after each high-temperature cycle. Therefore, various new kiln systems with light and open setting patterns can be realized where more fired goods can be produced with less kiln furniture ballast and within shorter firing cycles. The fast-firing technology of porcelain is an opportunity for new SiC kiln furniture ceramics. The new SiC ceramic systems available include: (1) recrystallized SiC (R-SiC); (2) silicon-infiltrated reaction-bonded SiCmore » (SiSiC); and (3) nitride-bonded SiC (NSiC). The new SiC ceramics have an important production criterion in common. They show practically no shrinkage during production. This is important for the manufacture of large shapes, such as beams, rollers and setter plates, as well as tailored geometries that allow light and open kiln furniture construction. Because of the extraordinarily high thermal shock resistance, high strength and high-temperature creep stability of these SiC ceramics, delicate and precise kiln furniture configurations have been introduced. One application is the fast firing of tableware with automatic setting robots.« less

Chemical reactivity of SiC fibre-reinforced SiC with beryllium and lithium ceramic breeder materials

NASA Astrophysics Data System (ADS)

Kleykamp, H.

2000-12-01

SiC fibre-reinforced SiC fabrics (f-SiC/SiC) are considered for structural materials of advanced fusion blanket concepts. Priority tasks are compatibility studies of SiC with Li breeder ceramics and the Be neutron multiplier. Isothermal and anisothermal powder reactions by DTA up to 1220°C were examined between Li 4SiO 4, Li 2ZrO 3 and Li 2TiO 3, respectively, and SiC and SiC/SiO 2 mixtures, respectively. The SiC/SiO 2 mixture simulated the chemical state of Nicalon fibres. Solid state reactions between SiC and Be pellets were studied by capsule experiments. The reaction products Be 2C and Si were observed between the initial phases after annealing at 800°C and 900°C. A parabolic time law with a chemical diffusion coefficient D˜=2.6×10 -15 m 2/s of Be in the products was deduced at 900°C. Additional oxygen released from SiO 2 as a component of the simulated fibres oxidised the reaction products via the gas phase by formation of a Be 2SiO 4 layer. All reactions are kinetically hindered below 700°C.

Fabrication of mullite-bonded porous SiC ceramics from multilayer-coated SiC particles through sol-gel and in-situ polymerization techniques

NASA Astrophysics Data System (ADS)

Ebrahimpour, Omid

In this work, mullite-bonded porous silicon carbide (SiC) ceramics were prepared via a reaction bonding technique with the assistance of a sol-gel technique or in-situ polymerization as well as a combination of these techniques. In a typical procedure, SiC particles were first coated by alumina using calcined powder and alumina sol via a sol-gel technique followed by drying and passing through a screen. Subsequently, they were coated with the desired amount of polyethylene via an in-situ polymerization technique in a slurry phase reactor using a Ziegler-Natta catalyst. Afterward, the coated powders were dried again and passed through a screen before being pressed into a rectangular mold to make a green body. During the heating process, the polyethylene was burnt out to form pores at a temperature of about 500°C. Increasing the temperature above 800°C led to the partial oxidation of SiC particles to silica. At higher temperatures (above 1400°C) derived silica reacted with alumina to form mullite, which bonds SiC particles together. The porous SiC specimens were characterized with various techniques. The first part of the project was devoted to investigating the oxidation of SiC particles using a Thermogravimetric analysis (TGA) apparatus. The effects of particle size (micro and nano) and oxidation temperature (910°C--1010°C) as well as the initial mass of SiC particles in TGA on the oxidation behaviour of SiC powders were evaluated. To illustrate the oxidation rate of SiC in the packed bed state, a new kinetic model, which takes into account all of the diffusion steps (bulk, inter and intra particle diffusion) and surface oxidation rate, was proposed. Furthermore, the oxidation of SiC particles was analyzed by the X-ray Diffraction (XRD) technique. The effect of different alumina sources (calcined Al2O 3, alumina sol or a combination of the two) on the mechanical, physical, and crystalline structure of mullite-bonded porous SiC ceramics was studied in the second part of the project. Alumina sol was synthesized by the hydrolysis of Aluminum isopropoxide using the Yoldas method. Alumina sol was homogenous and had a needle-like shape with a thickness of 2--3 nm. Crystalline changes during the heating process of alumina sol were studied using XRD. In addition, Fourier transform infrared (FTIR) spectroscopy was performed to identify the functional groups on the alumina sol surface as a function of temperature. In the third part of the project, the feasibility of the in-situ polymerization technique was investigated to fabricate porous SiC ceramics. In this part, the mixture of SiC and calcined alumina powders were coated by polyethylene via in-situ polymerizing referred to as the polymerization compounding process in a slurry phase. The polymerization was conducted under very moderate operational conditions using the Ziegler-Natta catalyst system. Differential scanning calorimetry (DSC) and TGA analysis and morphological studies (SEM and TEM) revealed the presence of a high density of polyethylene on the surface of SiC and alumina powders. The amount of polymer was controlled by the polymerization reaction time. Most parts of particles were coated by a thin layer of polyethylene and polymer. The porous SiC ceramics, which were fabricated by these treated particles showed higher mechanical and physical properties compared to the samples made without any treatment. The relative intensity of mullite was higher compared to the samples prepared by the traditional process. The effects of the sintering temperature, forming pressure and polymer content were also studied on the physical and mechanical properties of the final product. In the last phase of this research work, the focus of the investigation was to take advantage of both the sol-gel processing and in-situ polymerization method to develop a new process to manufacture mullite-bonded porous SiC ceramic with enhanced mechanical and physical properties. Therefore, first the SiC particles and alumina nano powders were mixed in alumina sol to adjust the alumina weight to 35 wt%. Then, the desired amount of catalyst, which depends on the total surface area of the particles, was grafted onto the surface of the powders under an inert atmosphere. Consequently, the polymerization started from the surface of the substrate. The treated powders were characterized by SEM, XPS and TGA. In addition, the amount of pore-former was determined by TGA analysis. Porous SiC ceramics, which were fabricated by the novel process, consist of mullite, SiC, cristobalite and a small amount of alumina and TiO 2 as a result of reaction of TiCl4 with air. Furthermore, the effect of the sintering temperatures (1500°C, 1550°C and 1600°C) on the crystalline structure of the porous samples was investigated. Furthermore, it was proposed that converting TiCl4 to TiO2 acted as the sintering additive to form mullite at a lower sintering temperature. (Abstract shortened by UMI.).

FORMATION OF SiC GRAINS IN PULSATION-ENHANCED DUST-DRIVEN WIND AROUND CARBON-RICH ASYMPTOTIC GIANT BRANCH STARS

DOE Office of Scientific and Technical Information (OSTI.GOV)

Yasuda, Yuki; Kozasa, Takashi, E-mail: yuki@antares-a.sci.hokudai.ac.jp

2012-02-01

We investigate the formation of silicon carbide (SiC) grains in the framework of dust-driven wind around pulsating carbon-rich asymptotic giant branch (C-rich AGB) stars to reveal not only the amount but also the size distribution. Two cases are considered for the nucleation process: one is the local thermal equilibrium (LTE) case where the vibration temperature of SiC clusters T{sub v} is equal to the gas temperature as usual, and another is the non-LTE case in which T{sub v} is assumed to be the same as the temperature of small SiC grains. The results of the hydrodynamical calculations for a modelmore » with stellar parameters of mass M{sub *} = 1.0 M{sub Sun }, luminosity L{sub *} = 10{sup 4} L{sub Sun }, effective temperature T{sub eff} = 2600 K, C/O ratio = 1.4, and pulsation period P = 650 days show the following: in the LTE case, SiC grains condense in accelerated outflowing gas after the formation of carbon grains, and the resulting averaged mass ratio of SiC to carbon grains of {approx}10{sup -8} is too small to reproduce the value of 0.01-0.3, which is inferred from the radiative transfer models. On the other hand, in the non-LTE case, the formation region of the SiC grains is more internal and/or almost identical to that of the carbon grains due to the so-called inverse greenhouse effect. The mass ratio of SiC to carbon grains averaged at the outer boundary ranges from 0.098 to 0.23 for the sticking probability {alpha}{sub s} = 0.1-1.0. The size distributions with the peak at {approx}0.2-0.3 {mu}m in radius cover the range of size derived from the analysis of the presolar SiC grains. Thus, the difference between the temperatures of the small cluster and gas plays a crucial role in the formation process of SiC grains around C-rich AGB stars, and this aspect should be explored for the formation process of dust grains in astrophysical environments.« less

Soil Inorganic Carbon Formation: Can Parent Material Overcome Climate?

NASA Astrophysics Data System (ADS)

Stanbery, C.; Will, R. M.; Seyfried, M. S.; Benner, S. G.; Flores, A. N.; Guilinger, J.; Lohse, K. A.; Good, A.; Black, C.; Pierce, J. L.

2014-12-01

Soil carbon is the third largest carbon reservoir and is composed of both organic and inorganic constituents. However, the storage and flux of soil carbon within the global carbon cycle are not fully understood. While organic carbon is often the focus of research, the factors controlling the formation and dissolution of soil inorganic carbon (SIC) are complex. Climate is largely accepted as the primary control on SIC, but the effects of soil parent material are less clear. We hypothesize that effects of parent material are significant and that SIC accumulation will be greater in soils formed from basalts than granites due to the finer textured soils and more abundant calcium and magnesium cations. This research is being conducted in the Reynolds Creek Experimental Watershed (RCEW) in southwestern Idaho. The watershed is an ideal location because it has a range of gradients in precipitation (250 mm to 1200 mm), ecology (sagebrush steppe to juniper), and parent materials (a wide array of igneous and sedimentary rock types) over a relatively small area. Approximately 20 soil profiles will be excavated throughout the watershed and will capture the effects of differing precipitation amounts and parent material on soil characteristics. Several samples at each site will be collected for analysis of SIC content and grain size distribution using a pressure calcimeter and hydrometers, respectively. Initial field data suggests that soils formed over basalts have a higher concentration of SIC than those on granitic material. If precipitation is the only control on SIC, we would expect to see comparable amounts in soils formed on both rock types within the same precipitation zone. However, field observations suggest that for all but the driest sites, soils formed over granite had no SIC detected while basalt soils with comparable precipitation had measurable amounts of SIC. Grain size distribution appears to be a large control on SIC as the sandier, granitic soils promote deeper percolation. This ongoing research will clarify the processes involved in SIC formation and identify the situations where it is an atmospheric source or sink.

Influence of surface morphology and UFG on damping and mechanical properties of composite reinforced with spinel MgAl{sub 2}O{sub 4}-SiC core-shell microcomposites

DOE Office of Scientific and Technical Information (OSTI.GOV)

Singh, Subhash; Pal, Kaushik, E-mail: pl_kshk@yaho

Interface between ceramic particulate and matrix is known to control the response of the materials and functionality of the composite. Among numerous physical properties, grain structure of the materials has also played a significant role in defining the behaviour of metal matrix composites. Usually, silicon carbide (SiC) particles show poor interfacial wettability in aluminium melt. Herein, we were successfully synthesized magnesium oxide (MgO) and nanocrystalline magnesium aluminate (MgAl{sub 2}O{sub 4}) spinel coated silicon carbide (SiC) core-shell micro-composites through sol-gel technique to improve the wettability of dispersoids. Core-shell structures of submicron size were thoroughly investigated by various characterization techniques. Further, aluminiummore » matrix composites incorporated with pristine SiC, MgO grafted SiC and MgAl{sub 2}O{sub 4} grafted SiC particles were fabricated by stir casting technique, respectively. Additionally, as-cast composites were processed via friction stir processing (FSP) technique to observe the influence of grain refinement on mechanical and damping properties. Electron back scattered diffraction (EBSD), Field emission scanning electron microscopy (FE-SEM) and X-ray energy dispersion spectroscopy (EDX) analysis were conducted for investigating grain size refinement, adequate dispersion, stability and de-agglomeration of encapsulated SiC particles in aluminium matrix. The mechanical as well as thermal cyclic (from − 100 to 400 °C) damping performance of the as-cast and friction stir processed composites were studied, respectively. Finally, the enhanced properties were attributable to reduced agglomeration, stabilization and proper dispersion of the tailored SiC particles Al matrix. - Highlights: •Synthesizing a novel coating layer of MgO and MgAl{sub 2}O{sub 4} spinel onto SiC particles •Significant improvement in UTS and hardness by reinforcing tailored SiC in Al •Significant grain refinements were obtained through FSP •SiC/MgAl{sub 2}O{sub 4}/Al exhibits ~ 61% higher storage modulus as compare to pure Al after FSP.« less

Silicon Carbide Emitter Turn-Off Thyristor

DOE PAGES

Wang, Jun; Wang, Gangyao; Li, Jun; ...

2008-01-01

A novel MOS-conmore » trolled SiC thyristor device, the SiC emitter turn-off thyristor (ETO) is a promising technology for future high-voltage switching applications because it integrates the excellent current conduction capability of a SiC thyristor with a simple MOS-control interface. Through unity-gain turn-off, the SiC ETO also achieves excellent Safe Operation Area (SOA) and faster switching speeds than silicon ETOs. The world's first 4.5-kV SiC ETO prototype shows a forward voltage drop of 4.26 V at 26.5  A / cm 2 current density at room and elevated temperatures. Tested in an inductive circuit with a 2.5 kV DC link voltage and a 9.56-A load current, the SiC ETO shows a fast turn-off time of 1.63 microseconds and a low 9.88 mJ turn-off energy. The low switching loss indicates that the SiC ETO could operate at about 4 kHz if 100  W / cm 2 conduction and the 100  W / cm 2 turn-off losses can be removed by the thermal management system. This frequency capability is about 4 times higher than 4.5-kV-class silicon power devices. The preliminary demonstration shows that the SiC ETO is a promising candidate for high-frequency, high-voltage power conversion applications, and additional developments to optimize the device for higher voltage (>5 kV) and higher frequency (10 kHz) are needed.« less

SiC Technology

NASA Technical Reports Server (NTRS)

Neudeck, Philip G.

1998-01-01

Silicon carbide (SiC)-based semiconductor electronic devices and circuits are presently being developed for use in high-temperature, high-power, and/or high-radiation conditions under which conventional semiconductors cannot adequately perform. Silicon carbide's ability to function under such extreme conditions is expected to enable significant improvements to a far-ranging variety of applications and systems. These range from greatly improved high-voltage switching [1- 4] for energy savings in public electric power distribution and electric motor drives to more powerful microwave electronics for radar and communications [5-7] to sensors and controls for cleaner-burning more fuel-efficient jet aircraft and automobile engines. In the particular area of power devices, theoretical appraisals have indicated that SiC power MOSFET's and diode rectifiers would operate over higher voltage and temperature ranges, have superior switching characteristics, and yet have die sizes nearly 20 times smaller than correspondingly rated silicon-based devices [8]. However, these tremendous theoretical advantages have yet to be realized in experimental SiC devices, primarily due to the fact that SiC's relatively immature crystal growth and device fabrication technologies are not yet sufficiently developed to the degree required for reliable incorporation into most electronic systems [9]. This chapter briefly surveys the SiC semiconductor electronics technology. In particular, the differences (both good and bad) between SiC electronics technology and well-known silicon VLSI technology are highlighted. Projected performance benefits of SiC electronics are highlighted for several large-scale applications. Key crystal growth and device-fabrication issues that presently limit the performance and capability of high temperature and/or high power SiC electronics are identified.

Wear Behaviour of Al-6061/SiC Metal Matrix Composites

NASA Astrophysics Data System (ADS)

Mishra, Ashok Kumar; Srivastava, Rajesh Kumar

2017-04-01

Aluminium Al-6061 base composites, reinforced with SiC particles having mesh size of 150 and 600, which is fabricated by stir casting method and their wear resistance and coefficient of friction has been investigated in the present study as a function of applied load and weight fraction of SiC varying from 5, 10, 15, 20, 25, 30, 35 and 40 %. The dry sliding wear properties of composites were investigated by using Pin-on-disk testing machine at sliding velocity of 2 m/s and sliding distance of 2000 m over a various loads of 10, 20 and 30 N. The result shows that the reinforcement of the metal matrix with SiC particulates up to weight percentage of 35 % reduces the wear rate. The result also show that the wear of the test specimens increases with the increasing load and sliding distance. The coefficient of friction slightly decreases with increasing weight percentage of reinforcements. The wear surfaces are examined by optical microscopy which shows that the large grooved regions and cavities with ceramic particles are found on the worn surface of the composite alloy. This indicates an abrasive wear mechanism, which is essentially a result of hard ceramic particles exposed on the worn surfaces. Further, it was found from the experimentation that the wear rate decreases linearly with increasing weight fraction of SiC and average coefficient of friction decreases linearly with increasing applied load, weight fraction of SiC and mesh size of SiC. The best result has been obtained at 35 % weight fraction and 600 mesh size of SiC.

Transmission Electron Microscopy of Non-Etched Presolar Silicon Carbide

NASA Technical Reports Server (NTRS)

Stroud, Rhonda M.; Nittler, Larry R.; Alexander, Conel M. O'D.; Bernatowicz, Thomas J.; Messenger, Scott R.

2003-01-01

Our solar system formed from nuclei produced in earlier generations of stars. Mixing in the proto-solar nebula isotopically homogenized most of this material, but some grains, called presolar grains, retain their original isotopic composition. The isotopic properties of presolar SiC grains indicate that most of the grains formed in the outflows of carbon-rich Asymptotic Giant Branch (AGB) stars. The microstructure of these presolar grains reflects the conditions of the dust formation and subsequent alteration. Early microstructural studies of SiC grains obtained by acid dissolution from meteorites show that most isotopically anomalous SiC grains have the face-centered cubic b- SiC structure. However, Daulton et al. have shown that a small fraction of sub-micron presolar SiC grains are of the hexagonal 2H polytype (a-SiC). Although the harsh chemical treatments of these grains does not alter their crystal structure, significant alteration of the surface morphology of the grains due to the acid treatments has been observed. In addition, the acid treatments may preferentially remove cracked or fissured grains, and possible sub-grains, such as graphite. By studying SiC grains isolated by physical separation and found in situ, we attempt to obtain a more complete analysis of presolar SiC microstructures, including the surface morphology, in order to address the formation and processing history of the grains. In our prior work, we reported on one in situ SiC grain (hereafter CBIS1). Here we present results from two additional grains, one in situ, and one prepared as a physical separate.

Determinant Product and Supplier Attributes in Domestic Markets for Hardwood Lumber

Treesearch

Robert J. Bush; Steven A. Sinclair; Philip A. Araman

1991-01-01

Product and supplier attributes that are critical in hardwood lumber purchase decisions (i.e., determinant) were investigated in four segments of the domestic market for hardwood lumber: millwork producers (Standard Industrial Classification (SIC) 2431), hardwood dimension and flooring producers (SIC 2426), wood household furniture producers (SIC 2511), and wood...

The Paralinear Oxidation of SiC in Combustion Environments

NASA Technical Reports Server (NTRS)

Opila, Elizabeth J.; Greenbauer-Seng, Leslie (Technical Monitor)

2000-01-01

SiC is proposed for structural applications in high pressure, high temperature. high gas velocity environments of turbine and rocket engines. These environments are typically composed of complex gas mixtures containing carbon dioxide, oxygen, water vapor, and nitrogen. It is known that the primary oxidant for SiC in these environments is water vapor.

Ceramic-Ceramic Composites Meeting in Belgium.

DTIC Science & Technology

1987-08-04

the liquid phase Vidrio , Madrid, Spain) described the use should disappear during the heat treat- of SIC grains as a dispersed phase to ment. The...SiC fiber-reinforced SiO2 glass ma- trix, mullite-zirconia-A120 3-SiC, C-fi- used elastic wave measurements at high ber-reinforced reaction-bonded SiC

Overview of Silicon Carbide Technology: Device, Converter, System, and Application

DOE PAGES

Wang, Fei; Zhang, Zheyu

2016-12-28

This article overviews the silicon carbide (SiC) technology. The focus is on the benefits of SiC based power electronics for converters and systems, as well as their ability in enabling new applications. The challenges and research trends on the design and application of SiC power electronics are also discussed.

The Social Interactive Coding System (SICS): An On-Line, Clinically Relevant Descriptive Tool.

ERIC Educational Resources Information Center

Rice, Mabel L.; And Others

1990-01-01

The Social Interactive Coding System (SICS) assesses the continuous verbal interactions of preschool children as a function of play areas, addressees, script codes, and play levels. This paper describes the 26 subjects and the setting involved in SICS development, coding definitions and procedures, training procedures, reliability, sample…

Transfer-free synthesis of graphene-like atomically thin carbon films on SiC by ion beam mixing technique

NASA Astrophysics Data System (ADS)

Zhang, Rui; Chen, Fenghua; Wang, Jinbin; Fu, Dejun

2018-03-01

Here we demonstrate the synthesis of graphene directly on SiC substrates at 900 °C using ion beam mixing technique with energetic carbon cluster ions on Ni/SiC structures. The thickness of 7-8 nm Ni films was evaporated on the SiC substrates, followed by C cluster ion bombarding. Carbon cluster ions C4 were bombarded at 16 keV with the dosage of 4 × 1016 atoms/cm2. After thermal annealing process Ni silicides were formed, whereas C atoms either from the decomposition of the SiC substrates or the implanted contributes to the graphene synthesis by segregating and precipitating process. The limited solubility of carbon atoms in silicides, involving SiC, Ni2Si, Ni5Si2, Ni3Si, resulted in diffusion and precipitation of carbon atoms to form graphene on top of Ni and the interface of Ni/SiC. The ion beam mixing technique provides an attractive production method of a transfer-free graphene growth on SiC and be compatible with current device fabrication.

The corrosion behavior of CVI SiC matrix in SiCf/SiC composites under molten fluoride salt environment

NASA Astrophysics Data System (ADS)

Wang, Hongda; Feng, Qian; Wang, Zhen; Zhou, Haijun; Kan, Yanmei; Hu, Jianbao; Dong, Shaoming

2017-04-01

High temperature corrosion behavior and microstructural evolution of designed chemical-vapor-infiltrated SiC matrix in SiC fiber reinforced SiC ceramic matrix composites in 46.5LiF-11.5NaF-42.0KF (mol. %) eutectic salt at 800 °C for various corrosion time was studied. Worse damage was observed as extending the exposure time, with the mass loss ratio increasing from 0.716 wt. % for 50 h to 5.914 wt. % for 500 h. The mass loss rate showed a trend of first decrease and then increase with the extended corrosion exposure. Compared with the near-stoichiometric SiC matrix layers, the O-contained boundaries between deposited matrix layers and the designed Si-rich SiC matrix layers were much less corrosion resistant and preferentially corroded. Liner relationship between the mass loss ratio and the corrosion time obtained from 50 h to 300 h indicated that the corrosion action was reaction-control process. Further corrosion would lead to matrix layer exfoliation and higher mass loss ratio.

Silicon Carbide (SiC) MOSFET-based Full-Bridge for Fusion Science Applications

NASA Astrophysics Data System (ADS)

Ziemba, Timothy; Miller, Kenneth; Prager, James; Picard, Julian; Hashim, Akel

2014-10-01

Switching power amplifiers (SPAs) have a wide variety of applications within the fusion science community, including feedback and control systems for dynamic plasma stabilization in tokamaks, inductive and arc plasma sources, Radio Frequency (RF) helicity and flux injection, RF plasma heating and current drive schemes, ion beam generation, and RF pre-ionizer systems. SiC MOSFETs offer many advantages over IGBTs including lower drive energy requirements, lower conduction and switching losses, and higher switching frequency capabilities. When comparing SiC and traditional silicon-based MOSFETs, SiC MOSFETs provide higher current carrying capability allowing for smaller package weights and sizes and lower operating temperature. Eagle Harbor Technologies (EHT) is designing, constructing, and testing a SiC MOSFET-based full-bridge SPA. EHT will leverage the proprietary gate drive technology previously developed with the support of a DOE SBIR, which will enable fast, efficient switching in a small form factor. The primary goal is to develop a SiC MOSFET-based SPA for fusion science applications. Work supported in part by the DOE under Contract Number DE-SC0011907.

Constructing exact symmetric informationally complete measurements from numerical solutions

NASA Astrophysics Data System (ADS)

Appleby, Marcus; Chien, Tuan-Yow; Flammia, Steven; Waldron, Shayne

2018-04-01

Recently, several intriguing conjectures have been proposed connecting symmetric informationally complete quantum measurements (SIC POVMs, or SICs) and algebraic number theory. These conjectures relate the SICs to their minimal defining algebraic number field. Testing or sharpening these conjectures requires that the SICs are expressed exactly, rather than as numerical approximations. While many exact solutions of SICs have been constructed previously using Gröbner bases, this method has probably been taken as far as is possible with current computer technology (except in special cases where there are additional symmetries). Here, we describe a method for converting high-precision numerical solutions into exact ones using an integer relation algorithm in conjunction with the Galois symmetries of an SIC. Using this method, we have calculated 69 new exact solutions, including nine new dimensions, where previously only numerical solutions were known—which more than triples the number of known exact solutions. In some cases, the solutions require number fields with degrees as high as 12 288. We use these solutions to confirm that they obey the number-theoretic conjectures, and address two questions suggested by the previous work.

High temperature tensile behavior and microstructure of Al-SiC nanocomposite fabricated by mechanical milling and hot extrusion technique

NASA Astrophysics Data System (ADS)

Soltani, Mohammadreza; Atrian, Amir

2018-02-01

This paper investigates the high-temperature tensile behavior of Al-SiC nanocomposite reinforced with 0, 1.5, and 3 vol% SiC nano particles. To fabricate the samples, SiC nano reinforcements and aluminum (Al) powders were milled using an attritor milling and then were cold pressed and hot extruded at 500 °C. Afterward, mechanical and microstructural characteristics were studied in different temperatures. To this end, tensile and compressive tests, micro-hardness test, microscopic examinations, and XRD analysis were performed. The results showed significant improvement of mechanical properties of Al-SiC nanocomposite in room temperature including 40% of ultimate tensile strength (UTS), 36% of ultimate compressive strength (UCS), and 44% of micro-hardness. Moreover, performing tensile tests at elevated temperatures (up to 270 °C) decreased the tensile strength by about 53%, 46%, and 45% for Al-0 vol% SiC, Al-1.5 vol% SiC, and Al-3 vol% SiC, respectively. This temperature rise also enhanced the elongation by about 11% and 133% for non-reinforced Al and Al-3 vol% SiC, respectively.

Formation of boron nitride coatings on silicon carbide fibers using trimethylborate vapor

NASA Astrophysics Data System (ADS)

Yuan, Mengjiao; Zhou, Tong; He, Jing; Chen, Lifu

2016-09-01

High quality boron nitride (BN) coatings have been grown on silicon carbide (SiC) fibers by carbothermal nitridation and at atmospheric pressure. SiC fibers were first treated in chlorine gas to form CDC (carbide-derived carbon) film on the fiber surface. The CDC-coated SiC fibers were then reacted with trimethylborate vapor and ammonia vapor at high temperature, forming BN coatings by carbothermal reduction. The FT-IR, XPS, XRD, SEM, TEM and AES were used to investigate the formation of the obtained coatings. It has been found that the obtained coatings are composed of phase mixture of h-BN and amorphous carbon, very uniform in thickness, have smooth surface and adhere well with the SiC fiber substrates. The BN-coated SiC fibers retain ∼80% strength of the as-received SiC fibers and show an obvious interfacial debonding and fiber pullout in the SiCf/SiOC composites. This method may be useful for the large scale production of high quality BN coating on silicon carbide fiber.

Surface characteristics and corrosion behaviour of WE43 magnesium alloy coated by SiC film

NASA Astrophysics Data System (ADS)

Li, M.; Cheng, Y.; Zheng, Y. F.; Zhang, X.; Xi, T. F.; Wei, S. C.

2012-01-01

Amorphous SiC film has been successfully fabricated on the surface of WE43 magnesium alloy by plasma enhanced chemical vapour deposition (PECVD) technique. The microstructure and elemental composition were analyzed by transmission electron microscopy (TEM), glancing angle X-ray diffraction (GAXRD) and X-ray photoelectron spectroscopy (XPS), respectively. The immersion test indicated that SiC film could efficiently slow down the degradation rate of WE43 alloy in simulated body fluid (SBF) at 37 ± 1 °C. The indirect toxicity experiment was conducted using L929 cell line and the results showed that the extraction medium of SiC coated WE43 alloys exhibited no inhibitory effect on L929 cell growth. The in vitro hemocompatibility of the samples was investigated by hemolysis test and blood platelets adhesion test, and it was found that the hemolysis rate of the coated WE43 alloy decreased greatly, and the platelets attached on the SiC film were slightly activated with a round shape. It could be concluded that SiC film prepared by PECVD made WE43 alloy more appropriate to biomedical application.

Structure/function implications in a dynamic complex of the intrinsically disordered Sic1 with the Cdc4 subunit of an SCF ubiquitin ligase

PubMed Central

Mittag, Tanja; Marsh, Joseph; Grishaev, Alexander; Orlicky, Stephen; Lin, Hong; Sicheri, Frank; Tyers, Mike; Forman-Kay, Julie D.

2010-01-01

Summary Intrinsically disordered proteins can form highly dynamic complexes with partner proteins. One such dynamic complex involves the intrinsically disordered Sic1 with its partner Cdc4 in regulation of yeast cell cycle progression. Phosphorylation of six N-terminal Sic1 sites leads to equilibrium engagement of each phosphorylation site with the primary binding pocket in Cdc4, the substrate recognition subunit of a ubiquitin ligase. ENSEMBLE calculations utilizing experimental NMR and small-angle x-ray scattering data reveal significant transient structure in both phosphorylation states of the isolated ensembles (Sic1 and pSic1) that modulates their electrostatic potential, suggesting a structural basis for the proposed strong contribution of electrostatics to binding. A structural model of the dynamic pSic1-Cdc4 complex demonstrates the spatial arrangements in the ubiquitin ligase complex. These results provide a physical picture of a protein that is predominantly disordered in both its free and bound states, enabling aspects of its structure/function relationship to be elucidated. PMID:20399186

Lightweight composite reflectors for space optics

NASA Astrophysics Data System (ADS)

Williams, Brian E.; McNeal, Shawn R.; Ono, Russell M.

1998-01-01

The primary goal of this work was to advance the state of the art in lightweight, high optical quality reflectors for space- and Earth-based telescopes. This was accomplished through the combination of a precision silicon carbide (SiC) reflector surface and a high specific strength, low-mass SiC structural support. Reducing the mass of components launched into space can lead to substantial cost savings, but an even greater benefit of lightweight reflectors for both space- and Earth-based optics applications is the fact that they require far less complex and less expensive positioning systems. While Ultramet is not the first company to produce SiC by chemical vapor deposition (CVD) for reflector surfaces, it is the first to propose and demonstrate a lightweight, open-cell SiC structural foam that can support a thin layer of the highly desirable polished SiC reflector material. SiC foam provides a substantial structural and mass advantage over conventional honeycomb supports and alternative finned structures. The result is a reflector component that meets or exceeds the optical properties of current high-quality glass, ceramic, and metal reflectors while maintaining a substantially lower areal density.

Pore Formation Process of Porous Ti3SiC2 Fabricated by Reactive Sintering

PubMed Central

Zhang, Huibin; Liu, Xinli; Jiang, Yao

2017-01-01

Porous Ti3SiC2 was fabricated with high purity, 99.4 vol %, through reactive sintering of titanium hydride (TiH2), silicon (Si) and graphite (C) elemental powders. The reaction procedures and the pore structure evolution during the sintering process were systematically studied by X-ray diffraction (XRD) and scanning electron microscope (SEM). Our results show that the formation of Ti3SiC2 from TiH2/Si/C powders experienced the following steps: firstly, TiH2 decomposed into Ti; secondly, TiC and Ti5Si3 intermediate phases were generated; finally, Ti3SiC2 was produced through the reaction of TiC, Ti5Si3 and Si. The pores formed in the synthesis procedure of porous Ti3SiC2 ceramics are derived from the following aspects: interstitial pores left during the pressing procedure; pores formed because of the TiH2 decomposition; pores formed through the reactions between Ti and Si and Ti and C powders; and the pores produced accompanying the final phase synthesized during the high temperature sintering process. PMID:28772515

Space sickness on earth

NASA Astrophysics Data System (ADS)

Nooij, S. A. E.; Bos, J. E.; Groen, E. L.; Bles, W.; Ockels, W. J.

2007-09-01

During the first days in space, i.e., after a transition from 1G to 0G, more than 50% of the astro- (and cosmonauts) suffer from the Space Adaptation Syndrome (SAS).The symptoms of SAS, like nausea and dizziness, are especially provoked by head movements. Astronauts have mentioned close similarities between the symptoms of SAS and the symptoms they experienced after a 1 hour centrifuge run on Earth, i.e., after a transition from 3G to 1G (denoted by Sickness Induced by Centrifugation, SIC). During several space missions, we related susceptibility to SAS and to SIC in 11 astronauts and found 4 of them being susceptible to both SIC and SAS, and 7 being not susceptible to SIC nor to SAS. This correspondence in susceptibility suggests that SIC and SAS share the same underlying mechanism. To further study this mechanism, several vestibular parameters have been investigated (e.g. postural stability, vestibularly driven eye movements, subjective vertical). We found some striking changes in individual cases that are possibly due to the centrifuge run. However, the variability between subjects generally is very large, making physiological links to SIC and SAS still hard to find.

Silicon carbide optics for space and ground based astronomical telescopes

NASA Astrophysics Data System (ADS)

Robichaud, Joseph; Sampath, Deepak; Wainer, Chris; Schwartz, Jay; Peton, Craig; Mix, Steve; Heller, Court

2012-09-01

Silicon Carbide (SiC) optical materials are being applied widely for both space based and ground based optical telescopes. The material provides a superior weight to stiffness ratio, which is an important metric for the design and fabrication of lightweight space telescopes. The material also has superior thermal properties with a low coefficient of thermal expansion, and a high thermal conductivity. The thermal properties advantages are important for both space based and ground based systems, which typically need to operate under stressing thermal conditions. The paper will review L-3 Integrated Optical Systems - SSG’s (L-3 SSG) work in developing SiC optics and SiC optical systems for astronomical observing systems. L-3 SSG has been fielding SiC optical components and systems for over 25 years. Space systems described will emphasize the recently launched Long Range Reconnaissance Imager (LORRI) developed for JHU-APL and NASA-GSFC. Review of ground based applications of SiC will include supporting L-3 IOS-Brashear’s current contract to provide the 0.65 meter diameter, aspheric SiC secondary mirror for the Advanced Technology Solar Telescope (ATST).

A wide bandgap silicon carbide (SiC) gate driver for high-temperature and high-voltage applications

DOE Office of Scientific and Technical Information (OSTI.GOV)

Lamichhane, Ranjan; Ericson, Milton Nance; Frank, Steven Shane

2014-01-01

Limitations of silicon (Si) based power electronic devices can be overcome with Silicon Carbide (SiC) because of its remarkable material properties. SiC is a wide bandgap semiconductor material with larger bandgap, lower leakage currents, higher breakdown electric field, and higher thermal conductivity, which promotes higher switching frequencies for high power applications, higher temperature operation, and results in higher power density devices relative to Si [1]. The proposed work is focused on design of a SiC gate driver to drive a SiC power MOSFET, on a Cree SiC process, with rise/fall times (less than 100 ns) suitable for 500 kHz tomore » 1 MHz switching frequency applications. A process optimized gate driver topology design which is significantly different from generic Si circuit design is proposed. The ultimate goal of the project is to integrate this gate driver into a Toyota Prius plug-in hybrid electric vehicle (PHEV) charger module. The application of this high frequency charger will result in lighter, smaller, cheaper, and a more efficient power electronics system.« less

Precursor Selection for Property Optimization in Biomorphic SiC Ceramics

NASA Technical Reports Server (NTRS)

Varela-Feria, F. M.; Lopez-Robledo, M. J.; Martinez-Fernandez, J.; deArellano-Lopez, A. R.; Singh, M.; Gray, Hugh R. (Technical Monitor)

2002-01-01

Biomorphic SiC ceramics have been fabricated using different wood precursors. The evolution of volume, density and microstructure of the woods, carbon performs, and final SiC products are systematically studied in order to establish experimental guidelines that allow materials selection. The wood density is a critical characteristic, which results in a particular final SiC density, and the level of anisotropy in mechanical properties in directions parallel (axial) and perpendicular (radial) to the growth of the wood. The purpose of this work is to explore experimental laws that can help choose a type of wood as precursor for a final SiC product, with a given microstructure, density and level of anisotropy. Preliminary studies of physical properties suggest that not only mechanical properties are strongly anisotropic, but also electrical conductivity and gas permeability, which have great technological importance.

Study on micro-hardness of electroless composite plating of Ni-P with SiC Nano-particles

NASA Astrophysics Data System (ADS)

Sun, Yong; Zhang, Zhaoguo; Li, Jiamin; Xu, Donghui

2007-07-01

In this paper, a Ni-P electroless composite coating containing nano SiC particles was produced. The wearability of the composite coating was studied. Temperature, PH of the plating liquid and the concentration of SiC nanoparticles in the plating liquid were taken as parameters and the experiment with three factors and five levels was designed through the method of quadratic orthogonal rotation combination. SiC nanoparticles were dispersed by ultrasonic. The influence of the testing parameters on the hardness of the coating was studied intensively. The optimal parameters were obtained when the temperature is 86+/-1°C, PH is 6+/-0.5 and the concentration of SiC nanoparticles is 6g/L. The maximal hardness of the coating is over 1700HV after heat treatment.

Electrospinning β-SiC fibers from SiC nanoparticles dispersed in various polymer solutions as the electrospinning agents

NASA Astrophysics Data System (ADS)

Fuad, A.; Fatriani, N.; Yogihati, C. I.; Taufiq, A.; Latifah, E.

2018-04-01

Silicon carbide (SiC) fibers were synthesized by electrospinning method from SiC nanoparticles dispersed in polymer solutions, i.e., polyethylene glycol (PEG) and polyvinyl alcohol (PVA). The SiC nanoparticle used in this research was synthesized from sucrose and natural silica via a sonochemical method. The natural silica was extracted from local pyrophyllite by a sol-gel method. The characterization was performed via x-ray fluorescence (XRF), X-ray diffraction (XRD), scanning electron microscopy (SEM). The XRD characterization results showed that the sample possessed a β-SiC phase and formed a cubic-structured crystal with a lattice parameter of a = b = c = 4.3448 Å. The use of PEG and PVA in the electrospinning process resulted in fractal and fiber structured SiC, respectively.

Behavior of ceramics at 1200 C in a simulated gas turbine environment

NASA Technical Reports Server (NTRS)

Sanders, W. A.; Probst, H. B.

1974-01-01

This report summarizes programs at the NASA Lewis Research Center evaluating several classes of commercial ceramics, in a high gas velocity burner rig simulating a gas turbine engine environment. Testing of 23 ceramics in rod geometry identified SiC and Si3N4 as outstanding in resistance to oxidation and thermal stress and identified the failure modes of other ceramics. Further testing of a group of 15 types of SiC and Si3N4 in simulated vane shape geometry has identified a hot pressed SiC, a reaction sintered SiC, and hot pressed Si3N4 as the best of that group. SiC and Si3N4 test specimens were compared on the basis of weight change, dimensional reductions, metallography, fluorescent penetrant inspection, X-ray diffraction analyses, and failure mode.

Microstructure, hardness and modulus of carbon-ion-irradiated new SiC fiber (601-4)

NASA Astrophysics Data System (ADS)

Huang, Qing; Lei, Guanhong; Liu, Renduo; Li, Jianjian; Yan, Long; Li, Cheng; Liu, Weihua; Wang, Mouhua

2018-05-01

Two types of SiC fibers, one is low-oxygen and carbon-rich fiber denoted by 601-4 and the other is low-oxygen and near-stoichiometric Tyranno SA, were irradiated with 450 keV C+ ions at room temperature. The Raman spectra indicate that irradiation induced distortion and amorphization of SiC crystallites in fibers. TEM characterization of Tyranno SA suggests that SiC crystallites undergo a continued fragmentation into smaller crystalline islands and a continued increase of surrounding amorphous structure. The SiC nano-crystallites (<15 nm) in 601-4 fiber are more likely to be amorphized than larger crystallites (∼200 nm) in Tyranno SA. The hardness and modulus of 601-4 continuously decreases with increasing fluence, while that of Tyranno SA first increases and then decreases.

Nitriding kinetics of Si-SiC powder mixtures as simulations of reaction bonded Si3N4-SiC composites

NASA Technical Reports Server (NTRS)

Lightfoot, A.; Sheldon, B. W.; Flint, J. H.; Haggerty, J. S.

1989-01-01

The nitriding kinetics of Si and Si plus SiC powder mixtures were studied to simulate the fabrication of RBSN-SiC ceramic matrix composites. Very clean, assynthesized, and solvent-exposed powders were studied; C-rich and Si-rich SiC 0.04-0.05 micron diameter powders were mixed in varying concentrations with SiH4-derived 0.2-0.3 micron diameter Si powder. Complete nitridation is achieved with C-rich SiC powders in 140 min at 1250 C, and in the centers of Si-rich SiC powders in 15 min. The effects on the incubation periods, fast reaction periods, and slow reaction periods that characterize these nitriding processes were studied to explain unusual reverse reaction gradients and other effects of contamination.

M3FT-16OR020202112 - Report on viability of hydrothermal corrosion resistant SiC/SiC Joint development

DOE Office of Scientific and Technical Information (OSTI.GOV)

Katoh, Yutai; Koyanagi, Takaaki; Kiggans Jr, James O.

2016-06-30

Hydrothermal corrosion of four types of the silicon carbide (SiC) to SiC plate joints were investigated under PWR and BWR relevant chemical conditions without irradiation. The joints were formed by metal diffusion bonding using molybdenum or titanium interlayer, reaction sintering using Ti-Si-C system, and SiC nanopowder sintering. Most of the formed joints withstood the corrosion tests for five weeks. The recession of the SiC substrates was limited. Based on the recession rate of the bonding layers, it was concluded that all the joints except for the molybdenum diffusion bond are promising under the reducing activity environments. The SiC nanopowder sinteredmore » joint was the most corrosion tolerant under the oxidizing activity environment among the four joints.« less

Wear-triggered self-healing behavior on the surface of nanocrystalline nickel aluminum bronze/Ti3SiC2 composites

NASA Astrophysics Data System (ADS)

Zhai, Wenzheng; Lu, Wenlong; Zhang, Po; Wang, Jian; Liu, Xiaojun; Zhou, Liping

2018-04-01

Self-healing can protect materials from diverse damages, but is intrinsically difficult in metals. This paper demonstrates a potential method through a simultaneous decomposition and oxidation of Ti3SiC2 to achieve healing of stress cracking on the surface of nickel aluminum bronze (NAB)/Ti3SiC2 nanocrystalline composites during fretting wear. At the finest nanocrystalline materials, a crack recovery would be attained at 76.5%. The repetitive fretting wear leads to a modest amount of 'flowability' of Ti3SiC2 toward the crack, facilitating crack recovery. Along with the wear-triggered self-healing, the NAB/Ti3SiC2 shows an improved tribological performance with the stable decreased friction torque due to the formation of lubrication TiO2 oxide.

Amorphization resistance of nano-engineered SiC under heavy ion irradiation

DOE Office of Scientific and Technical Information (OSTI.GOV)

Imada, Kenta; Ishimaru, Manabu; Xue, Haizhou

Silicon carbide (SiC) with a high-density of planar defects (hereafter, ‘nano-engineered SiC’) and epitaxially-grown single-crystalline 3C-SiC were simultaneously irradiated with Au ions at room temperature, in order to compare their relative resistance to radiation-induced amorphization. Furthermore, it was found that the local threshold dose for amorphization is comparable for both samples under 2 MeV Au ion irradiation; whereas, nano-engineered SiC exhibits slightly greater radiation tolerance than single crystalline SiC under 10 MeV Au irradiation. Under 10 MeV Au ion irradiation, the dose for amorphization increased by about a factor of two in both nano-engineered and single crystal SiC due tomore » the local increase in electronic energy loss that enhanced dynamic recovery.« less

Irradiation resistance of silicon carbide joint at light water reactor–relevant temperature

DOE PAGES

Koyanagi, T.; Katoh, Y.; Kiggans, J. O.; ...

2017-03-10

We fabricated and irradiated monolithic silicon carbide (SiC) to SiC plate joints with neutrons at 270–310 °C to 8.7 dpa for SiC. The joining methods included solid state diffusion bonding using titanium and molybdenum interlayers, SiC nanopowder sintering, reaction sintering with a Ti-Si-C system, and hybrid processing of polymer pyrolysis and chemical vapor infiltration (CVI). All the irradiated joints exhibited apparent shear strength of more than 84 MPa on average. Significant irradiation-induced cracking was found in the bonding layers of the Ti and Mo diffusion bonds and Ti-Si-C reaction sintered bond. Furthermore, the SiC-based bonding layers of the SiC nanopowdermore » sintered and hybrid polymer pyrolysis and CVI joints all showed stable microstructure following the irradiation.« less

Amorphization resistance of nano-engineered SiC under heavy ion irradiation

DOE PAGES

Imada, Kenta; Ishimaru, Manabu; Xue, Haizhou; ...

2016-06-19

Silicon carbide (SiC) with a high-density of planar defects (hereafter, ‘nano-engineered SiC’) and epitaxially-grown single-crystalline 3C-SiC were simultaneously irradiated with Au ions at room temperature, in order to compare their relative resistance to radiation-induced amorphization. Furthermore, it was found that the local threshold dose for amorphization is comparable for both samples under 2 MeV Au ion irradiation; whereas, nano-engineered SiC exhibits slightly greater radiation tolerance than single crystalline SiC under 10 MeV Au irradiation. Under 10 MeV Au ion irradiation, the dose for amorphization increased by about a factor of two in both nano-engineered and single crystal SiC due tomore » the local increase in electronic energy loss that enhanced dynamic recovery.« less

Pristine Samples of Silicon Carbide Separated From the Canyon Diablo Meteorite

NASA Astrophysics Data System (ADS)

Leung, I. S.; Winston, R.

2008-12-01

The Canyon Diablo is an iron meteorite whose collision with Earth created Meteor Crater in Arizona. In a study of a large block (53 kg) of this meteorite, Henri Moissan reported his findings of green, hexagonal crystals of silicon carbide (SiC) which was given the name moissanite the following year by George Kunz (1905). Moissan did not report finding the cubic form of SiC. Subsequently, many erroneous reports appeared when the polishing compound (synthetic SiC) was mistakenly considered by researchers as a natural mineral associated with, rather than a contaminant of many rock types. Hence, the occurrence of SiC in the Canyon Diablo remains in doubt, and any proposal to investigate this problem was discouraged and regarded as predictably unproductive. This notion hampered further work on abundant materials housed in museums. SiC grains have been found in primitive meteorites and interplanetary dust particles. Some have been identified as presolar grains. The significance of SiC in the Canyon Diablo cannot be revealed unless we have abundant data from pristine samples, enough for us to classify them into presolar or other types. We report here a simple method we used to separate SiC crystals from the meteorite. We chose samples containing a carbon nodule composed of graphite, diamond-lonsdaleite, and SiC grains in the iron matrix. We broke up the carbon nodule with a sharp tungsten carbide chisel and hammer. After removing the large metal fragments, we put a small amount of the fine black grains in a Petri dish with acetone, then swerved the dish to scatter the grains sparingly on the bottom of the dish. Under a binocular microscope, SiC crystals can be spotted easily by their adamantine luster, color (blue, green, beige, etc.), and high birefringence when placed between crossed polarizers of a petrographic microscope. We also X-rayed individual grains, and have identified several hexagonal polytype structures as well as the cubic form (3C polytype).

Tungsten Isotopic Compositions in Stardust SiC Grains from the Murchison Meteorite: Constraints on the s-process in the Hf-Ta-W-Re-Os Region

NASA Astrophysics Data System (ADS)

Ávila, Janaína N.; Lugaro, Maria; Ireland, Trevor R.; Gyngard, Frank; Zinner, Ernst; Cristallo, Sergio; Holden, Peter; Buntain, Joelene; Amari, Sachiko; Karakas, Amanda

2012-01-01

We report the first tungsten isotopic measurements in stardust silicon carbide (SiC) grains recovered from the Murchison carbonaceous chondrite. The isotopes 182,183,184,186W and 179,180Hf were measured on both an aggregate (KJB fraction) and single stardust SiC grains (LS+LU fraction) believed to have condensed in the outflows of low-mass carbon-rich asymptotic giant branch (AGB) stars with close-to-solar metallicity. The SiC aggregate shows small deviations from terrestrial (= solar) composition in the 182W/184W and 183W/184W ratios, with deficits in 182W and 183W with respect to 184W. The 186W/184W ratio, however, shows no apparent deviation from the solar value. Tungsten isotopic measurements in single mainstream stardust SiC grains revealed lower than solar 182W/184W, 183W/184W, and 186W/184W ratios. We have compared the SiC data with theoretical predictions of the evolution of W isotopic ratios in the envelopes of AGB stars. These ratios are affected by the slow neutron-capture process and match the SiC data regarding their 182W/184W, 183W/184W, and 179Hf/180Hf isotopic compositions, although a small adjustment in the s-process production of 183W is needed in order to have a better agreement between the SiC data and model predictions. The models cannot explain the 186W/184W ratios observed in the SiC grains, even when the current 185W neutron-capture cross section is increased by a factor of two. Further study is required to better assess how model uncertainties (e.g., the formation of the 13C neutron source, the mass-loss law, the modeling of the third dredge-up, and the efficiency of the 22Ne neutron source) may affect current s-process predictions.

Characterization of Interface State in Silicon Carbide Metal Oxide Semiconductor Capacitors

NASA Astrophysics Data System (ADS)

Kao, Wei-Chieh

Silicon carbide (SiC) has always been considered as an excellent material for high temperature and high power devices. Since SiC is the only compound semiconductor whose native oxide is silicon dioxide (SiO2), it puts SiC in a unique position. Although SiC metal oxide semiconductor (MOS) technology has made significant progress in recent years, there are still a number of issues to be overcome before more commercial SiC devices can enter the market. The prevailing issues surrounding SiC MOSFET devices are the low channel mobility, the low quality of the oxide layer and the high interface state density at the SiC/SiO2 interface. Consequently, there is a need for research to be performed in order to have a better understanding of the factors causing the poor SiC/SiO2 interface properties. In this work, we investigated the generation lifetime in SiC materials by using the pulsed metal oxide semiconductor (MOS) capacitor method and measured the interface state density distribution at the SiC/SiO2 interface by using the conductance measurement and the high-low frequency capacitance technique. These measurement techniques have been performed on n-type and p-type SiC MOS capacitors. In the course of our investigation, we observed fast interface states at semiconductor-dielectric interfaces in SiC MOS capacitors that underwent three different interface passivation processes, such states were detected in the nitrided samples but not observed in PSG-passivated samples. This result indicate that the lack of fast states at PSG-passivated interface is one of the main reasons for higher channel mobility in PSG MOSFETs. In addition, the effect of mobile ions in the oxide on the response time of interface states has been investigated. In the last chapter we propose additional methods of investigation that can help elucidate the origin of the particular interface states, enabling a more complete understanding of the SiC/SiO2 material system.

Fabricating porous silicon carbide

NASA Technical Reports Server (NTRS)

Shor, Joseph S. (Inventor); Kurtz, Anthony D. (Inventor)

1994-01-01

The formation of porous SiC occurs under electrochemical anodization. A sample of SiC is contacted electrically with nickel and placed into an electrochemical cell which cell includes a counter electrode and a reference electrode. The sample is encapsulated so that only a bare semiconductor surface is exposed. The electrochemical cell is filled with an HF electrolyte which dissolves the SiC electrochemically. A potential is applied to the semiconductor and UV light illuminates the surface of the semiconductor. By controlling the light intensity, the potential and the doping level, a porous layer is formed in the semiconductor and thus one produces porous SiC.

Fabrication of SiC-Particles-Shielded Al Spheres upon Recycling Al/SiC Composites

NASA Astrophysics Data System (ADS)

Madarasz, D.; Budai, I.; Kaptay, G.

2011-06-01

Wettability of liquid A359 alloy on SiC particles under molten salt NaCl-KCl-NaF is found at 180 deg, meaning that SiC particles prefer the molten salt phase against the Al phase or the Al/molten salt interface. Thus, this molten salt can be used for recycling, i.e., to separate the phases in the SiC reinforced Al matrix composites. If the separation process is interrupted, Al droplets (submillimeter solidified powder) can be produced, stabilized/surrounded by a monolayer of shielding SiC particles.

The intensive terahertz electroluminescence induced by Bloch oscillations in SiC natural superlattices

PubMed Central

2012-01-01

We report on efficient terahertz (THz) emission from high-electric-field-biased SiC structures with a natural superlattice at liquid helium temperatures. The emission spectrum demonstrates a single line, the maximum of which shifts linearly with increases in bias field. We attribute this emission to steady-state Bloch oscillations of electrons in the SiC natural superlattice. The properties of the THz emission agree fairly with the parameters of the Bloch oscillator regime, which have been proven by high-field electron transport studies of SiC structures with natural superlattices. PMID:23043773

Intrusive origin of the Sudbury Igneous Complex: Structural and sedimentological evidence

NASA Technical Reports Server (NTRS)

Cowan, E. J.; Schwerdtner, W. M.

1992-01-01

In recent years, many geoscientists have come to believe that the Sudbury event was exogenic rather than endogenic. Critical to a recent exogenic hypothesis is the impact melt origin of the Sudbury Igneous Complex (SIC). Such origin implies that the SIC was emplaced before deposition of the Whitewater Group, in contrast to origins in which the SIC postdates the lithification of the Onaping Formation. Structural and sedimentological evidence is summarized herein that supports an intrusion of the SIC after lithification of all Whitewater Group strata, and conflicts with the hypothesis advanced by other researchers.

Harsh Environment Silicon Carbide Sensor Technology for Geothermal Instrumentation

DOE Office of Scientific and Technical Information (OSTI.GOV)

Pisano, Albert P.

2013-04-26

This project utilizes Silicon Carbide (SiC) materials platform to fabricate advanced sensors to be used as high-temperature downhole instrumentation for the DOE’s Geothermal Technologies Program on Enhanced Geothermal Systems. The scope of the proposed research is to 1) develop a SiC pressure sensor that can operate in harsh supercritical conditions, 2) develop a SiC temperature sensor that can operate in harsh supercritical conditions, 3) develop a bonding process for adhering SiC sensor die to well casing couplers, and 4) perform experimental exposure testing of sensor materials and the sensor devices.

Method for forming fibrous silicon carbide insulating material

DOEpatents

Wei, G.C.

1983-10-12

A method whereby silicon carbide-bonded SiC fiber composites are prepared from carbon-bonded C fiber composites is disclosed. Carbon-bonded C fiber composite material is treated with gaseous silicon monoxide generated from the reaction of a mixture of colloidal silica and carbon black at an elevated temperature in an argon atmosphere. The carbon in the carbon bond and fiber is thus chemically converted to SiC resulting in a silicon carbide-bonded SiC fiber composite that can be used for fabricating dense, high-strength high-toughness SiC composites or as thermal insulating materials in oxidizing environments.

Method for forming fibrous silicon carbide insulating material

DOEpatents

Wei, George C.

1984-01-01

A method whereby silicon carbide-bonded SiC fiber composites are prepared from carbon-bonded C fiber composites is disclosed. Carbon-bonded C fiber composite material is treated with gaseous silicon monoxide generated from the reaction of a mixture of colloidal silica and carbon black at an elevated temperature in an argon atmosphere. The carbon in the carbon bond and fiber is thus chemically converted to SiC resulting in a silicon carbide-bonded SiC fiber composite that can be used for fabricating dense, high-strength high-toughness SiC composites or as thermal insulating materials in oxidizing environments.

The Commercialization of the SiC Flame Sensor

NASA Astrophysics Data System (ADS)

Fedison, Jeffrey B.

2002-03-01

The technical and scientific steps required to produce large quantities of SiC flame sensors is described. The technical challenges required to understand, fabricate, test and package SiC photodiodes in 1990 were numerous since SiC device know how was embryonic. A sense of urgency for a timely replacement of the Geiger Muller gas discharge tube soon entered the scene. New dual fuel GE Power Systems gas turbines, which were designed to lean burn either natural gas or oil for low NOx emissions required a much higher sensitivity sensor. Joint work between GE CRD and Cree Research sponsored by the GE Aircraft Engine Division developed the know how for the fabrication of high sensitivity, high yield, reliable SiC photodiodes. Yield issues were uncovered and overcome. The urgency for system insertion required that SiC diode and sensor circuitry development needed to be carried out simultaneously with power plant field tests of laboratory or prototype sensor assemblies. The sensor and reliability specifications were stringent since the sensors installed on power plant turbine combustor walls are subjected to high levels of vibration, elevated temperatures, and high pressures. Furthermore a fast recovery time was required to sense flame out in spite of the fact that the amplifier circuit needed have high gain and high dynamic range. SiC diode technical difficulties were encountered and overcome. The science of hydrocarbon flames will also be described together with the fortunate overlap of the strong OH emission band with the SiC photodiode sensitivity versus wavelength characteristic. The extremely low dark current (<1pA/cm^2) afforded by the wide band gap and the 3eV sensitivity cutoff at 400nm made if possible to produce low amplifier offsets, high sensitivity and high dynamic range along with immunity to black body radiation from combustor walls. Field tests at power plants that had experienced turbine tripping, whenever oil fuel and/or oil with steam injection for power augmentation, were extremely encouraging. This warrantee problem previously due to the low sensitivity of the Geiger Muller tube was solved using the much higher sensitivity SiC detector. This sensitivity increase is partially due to the fact that the SiC photodiode “sees” the strong OH emission band whereas the Geiger Muller tube can only respond to the shorter wavelength CO emission band. Other successful field tests were observed and acclaimed by power plant operators, which for the first time could track mode switching and power level (flame intensity) because of the high dynamic range (>5000:1). The demand for this product thereupon rose dramatically. This success, the first for SiC devices other than that of SiC blue LEDs, is leading GE to implement this technology in other application fields.

Hydrogen generation due to water splitting on Si - terminated 4H-Sic(0001) surfaces

NASA Astrophysics Data System (ADS)

Li, Qingfang; Li, Qiqi; Yang, Cuihong; Rao, Weifeng

2018-02-01

The chemical reactions of hydrogen gas generation via water splitting on Si-terminated 4H-SiC surfaces with or without C/Si vacancies were studied by using first-principles. We studied the reaction mechanisms of hydrogen generation on the 4H-SiC(0001) surface. Our calculations demonstrate that there are major rearrangements in surface when H2O approaches the SiC(0001) surface. The first H splitting from water can occur with ground-state electronic structures. The second H splitting involves an energy barrier of 0.65 eV. However, the energy barrier for two H atoms desorbing from the Si-face and forming H2 gas is 3.04 eV. In addition, it is found that C and Si vacancies can form easier in SiC(0001)surfaces than in SiC bulk and nanoribbons. The C/Si vacancies introduced can enhance photocatalytic activities. It is easier to split OH on SiC(0001) surface with vacancies compared to the case of clean SiC surface. H2 can form on the 4H-SiC(0001) surface with C and Si vacancies if the energy barriers of 1.02 and 2.28 eV are surmounted, respectively. Therefore, SiC(0001) surface with C vacancy has potential applications in photocatalytic water-splitting.

A Comparative Study of Thermal Conductivity and Tribological Behavior of Squeeze Cast A359/AlN and A359/SiC Composites

NASA Astrophysics Data System (ADS)

Shalaby, Essam. A. M.; Churyumov, Alexander. Yu.; Besisa, Dina. H. A.; Daoud, A.; Abou El-khair, M. T.

2017-07-01

A comparative study of thermal and wear behavior of squeeze cast A359 alloy and composites containing 5, 10 and 15 wt.% AlN and SiC particulates was investigated. It was pointed out that A359/AlN composites have a superior thermal conductivity as compared to A359 alloy or even to A359/SiC composites. Composites wear characteristics were achieved by pins-on-disk instrument over a load range of 20-60 N and a sliding speed of 2.75 m/s. Results showed that A359/AlN and A359/SiC composites exhibited higher wear resistance values compared to A359 alloy. Moreover, A359/AlN composites showed superior values of wear resistance than A359/SiC composites at relatively high loads. Friction coefficients and contact surface temperature for A359/AlN specimens decreased as AlN content increased, while they increased for A359/SiC. Investigations of worn surfaces revealed that A359/AlN composites were covered up by aluminum nitrides and iron oxides, which acted as smooth layers. However, A359/SiC composites were mainly covered only by iron oxides. The superior thermal conductivity and the significant wear resistance of the developed A359/AlN composites provided a high durable material suitable for industrial applications.

Improvement on the electrical characteristics of Pd/HfO2/6H-SiC MIS capacitors using post deposition annealing and post metallization annealing

NASA Astrophysics Data System (ADS)

Esakky, Papanasam; Kailath, Binsu J.

2017-08-01

HfO2 as a gate dielectric enables high electric field operation of SiC MIS structure and as gas sensor HfO2/SiC capacitors offer higher sensitivity than SiO2/SiC capacitors. The issue of higher density of oxygen vacancies and associated higher leakage current necessitates better passivation of HfO2/SiC interface. Effect of post deposition annealing in N2O plasma and post metallization annealing in forming gas on the structural and electrical characteristics of Pd/HfO2/SiC MIS capacitors are reported in this work. N2O plasma annealing suppresses crystallization during high temperature annealing thereby improving the thermal stability and plasma annealing followed by rapid thermal annealing in N2 result in formation of Hf silicate at the HfO2/SiC interface resulting in order of magnitude lower density of interface states and gate leakage current. Post metallization annealing in forming gas for 40 min reduces interface state density by two orders while gate leakage current density is reduced by thrice. Post deposition annealing in N2O plasma and post metallization annealing in forming gas are observed to be effective passivation techniques improving the electrical characteristics of HfO2/SiC capacitors.

Antarctic climate change: extreme events disrupt plastic phenotypic response in Adélie penguins.

PubMed

Lescroël, Amélie; Ballard, Grant; Grémillet, David; Authier, Matthieu; Ainley, David G

2014-01-01

In the context of predicted alteration of sea ice cover and increased frequency of extreme events, it is especially timely to investigate plasticity within Antarctic species responding to a key environmental aspect of their ecology: sea ice variability. Using 13 years of longitudinal data, we investigated the effect of sea ice concentration (SIC) on the foraging efficiency of Adélie penguins (Pygoscelis adeliae) breeding in the Ross Sea. A 'natural experiment' brought by the exceptional presence of giant icebergs during 5 consecutive years provided unprecedented habitat variation for testing the effects of extreme events on the relationship between SIC and foraging efficiency in this sea-ice dependent species. Significant levels of phenotypic plasticity were evident in response to changes in SIC in normal environmental conditions. Maximum foraging efficiency occurred at relatively low SIC, peaking at 6.1% and decreasing with higher SIC. The 'natural experiment' uncoupled efficiency levels from SIC variations. Our study suggests that lower summer SIC than currently observed would benefit the foraging performance of Adélie penguins in their southernmost breeding area. Importantly, it also provides evidence that extreme climatic events can disrupt response plasticity in a wild seabird population. This questions the predictive power of relationships built on past observations, when not only the average climatic conditions are changing but the frequency of extreme climatic anomalies is also on the rise.

Antarctic Climate Change: Extreme Events Disrupt Plastic Phenotypic Response in Adélie Penguins

PubMed Central

Lescroël, Amélie; Ballard, Grant; Grémillet, David; Authier, Matthieu; Ainley, David G.

2014-01-01

In the context of predicted alteration of sea ice cover and increased frequency of extreme events, it is especially timely to investigate plasticity within Antarctic species responding to a key environmental aspect of their ecology: sea ice variability. Using 13 years of longitudinal data, we investigated the effect of sea ice concentration (SIC) on the foraging efficiency of Adélie penguins (Pygoscelis adeliae) breeding in the Ross Sea. A ‘natural experiment’ brought by the exceptional presence of giant icebergs during 5 consecutive years provided unprecedented habitat variation for testing the effects of extreme events on the relationship between SIC and foraging efficiency in this sea-ice dependent species. Significant levels of phenotypic plasticity were evident in response to changes in SIC in normal environmental conditions. Maximum foraging efficiency occurred at relatively low SIC, peaking at 6.1% and decreasing with higher SIC. The ‘natural experiment’ uncoupled efficiency levels from SIC variations. Our study suggests that lower summer SIC than currently observed would benefit the foraging performance of Adélie penguins in their southernmost breeding area. Importantly, it also provides evidence that extreme climatic events can disrupt response plasticity in a wild seabird population. This questions the predictive power of relationships built on past observations, when not only the average climatic conditions are changing but the frequency of extreme climatic anomalies is also on the rise. PMID:24489657

Hypervariability generated by natural selection in an extracellular complement-inhibiting protein of serotype M1 strains of group A Streptococcus.

PubMed

Stockbauer, K E; Grigsby, D; Pan, X; Fu, Y X; Mejia, L M; Cravioto, A; Musser, J M

1998-03-17

In many countries, M1 strains of the human pathogenic bacterium group A Streptococcus are the most common serotype recovered from patients with invasive disease episodes. Strains of this serotype express an extracellular protein that inhibits complement [streptococcal inhibitor of complement (Sic)] and is therefore believed to be a virulence factor. Comparative sequence analysis of the 915-bp sic gene in 165 M1 organisms recovered from diverse localities and infection types identified 62 alleles. Inasmuch as multilocus enzyme electrophoresis and pulsed-field gel electrophoresis previously showed that most M1 organisms represent a distinct streptococcal clone, the extent of sic gene polymorphism was unexpected. The level of polymorphism greatly exceeds that recorded for all other genes examined in serotype M1 strains. All insertions and deletions are in frame, and virtually all nucleotide substitutions alter the amino acid sequence of the Sic protein. These molecular features indicate that structural change in Sic is mediated by natural selection. Study of 70 strains recovered from two temporally distinct epidemics of streptococcal infections in the former East Germany found little sharing of Sic variants among strains recovered in the different time periods. Taken together, the data indicate that sic is a uniquely variable gene and provide insight into a potential molecular mechanism contributing to fluctuations in streptococcal disease frequency and severity.

Quantitative determination of airborne respirable non-fibrous alpha-silicon carbide by x-ray powder diffractometry.

PubMed

Bye, E; Føreland, S; Lundgren, L; Kruse, K; Rønning, R

2009-06-01

The purpose of the present investigation was to establish a method for the determination of airborne respirable non-fibrous silicon carbide (SiC). The main application is within the industrial production of SiC. Due to the complex airborne aerosol mixture of crystalline compounds in the SiC industry, X-ray powder diffractometry was selected as the most appropriate method. Without any international standard material for the respirable fraction of non-fibrous SiC, pure and suitable products from three SiC plants in Norway were selected. These products have a median particle diameter in the range 4.4-5.1 mum. The method is based on thin sample technique, with the dust deposited on a polycarbonate filter. Absorption correction is done by standard procedures with the use of a silver filter, situated below the polycarbonate filter. The diffraction line used for quantitative determination was selected carefully. This was done to avoid interferences from quartz, cristobalite, and graphite, which all are airborne components present in the atmosphere during the industrial process. The instrumental limit of detection for the method is 12 microg. This method has been used to determine airborne non-fibrous SiC in a comprehensive ongoing project in the Norwegian SiC industry for further epidemiological studies. The method is fully applicable for compliance work.

Hybrid quantum and molecular mechanics embedded cluster models for chemistry on silicon and silicon carbide surfaces

NASA Astrophysics Data System (ADS)

Shoemaker, James Richard

Fabrication of silicon carbide (SiC) semiconductor devices are of interest for aerospace applications because of their high-temperature tolerance. Growth of an insulating SiO2 layer on SiC by oxidation is a poorly understood process, and sometimes produces interface defects that degrade device performance. Accurate theoretical models of surface chemistry, using quantum mechanics (QM), do not exist because of the huge computational cost of solving Schrodinger's equation for a molecular cluster large enough to represent a surface. Molecular mechanics (MM), which describes a molecule as a collection of atoms interacting through classical potentials, is a fast computational method, good at predicting molecular structure, but cannot accurately model chemical reactions. A new hybrid QM/MM computational method for surface chemistry was developed and applied to silicon and SiC surfaces. The addition of MM steric constraints was shown to have a large effect on the energetics of O atom adsorption on SiC. Adsorption of O atoms on Si-terminated SiC(111) favors above surface sites, in contrast to Si(111), but favors subsurface adsorption sites on C- terminated SiC(111). This difference, and the energetics of C atom etching via CO2 desorption, can explain the observed poor performance of SiC devices in which insulating layers were grown on C-terminated surfaces.

D-region ion-neutral coupled chemistry (Sodankylä Ion Chemistry, SIC) within the Whole Atmosphere Community Climate Model (WACCM 4) - WACCM-SIC and WACCM-rSIC

NASA Astrophysics Data System (ADS)

Kovács, Tamás; Plane, John M. C.; Feng, Wuhu; Nagy, Tibor; Chipperfield, Martyn P.; Verronen, Pekka T.; Andersson, Monika E.; Newnham, David A.; Clilverd, Mark A.; Marsh, Daniel R.

2016-09-01

This study presents a new ion-neutral chemical model coupled into the Whole Atmosphere Community Climate Model (WACCM). The ionospheric D-region (altitudes ˜ 50-90 km) chemistry is based on the Sodankylä Ion Chemistry (SIC) model, a one-dimensional model containing 307 ion-neutral and ion recombination, 16 photodissociation and 7 photoionization reactions of neutral species, positive and negative ions, and electrons. The SIC mechanism was reduced using the simulation error minimization connectivity method (SEM-CM) to produce a reaction scheme of 181 ion-molecule reactions of 181 ion-molecule reactions of 27 positive and 18 negative ions. This scheme describes the concentration profiles at altitudes between 20 km and 120 km of a set of major neutral species (HNO3, O3, H2O2, NO, NO2, HO2, OH, N2O5) and ions (O2+, O4+, NO+, NO+(H2O), O2+(H2O), H+(H2O), H+(H2O)2, H+(H2O)3, H+(H2O)4, O3-, NO2-, O-, O2, OH-, O2-(H2O), O2-(H2O)2, O4-, CO3-, CO3-(H2O), CO4-, HCO3-, NO2-, NO3-, NO3-(H2O), NO3-(H2O)2, NO3-(HNO3), NO3-(HNO3)2, Cl-, ClO-), which agree with the full SIC mechanism within a 5 % tolerance. Four 3-D model simulations were then performed, using the impact of the January 2005 solar proton event (SPE) on D-region HOx and NOx chemistry as a test case of four different model versions: the standard WACCM (no negative ions and a very limited set of positive ions); WACCM-SIC (standard WACCM with the full SIC chemistry of positive and negative ions); WACCM-D (standard WACCM with a heuristic reduction of the SIC chemistry, recently used to examine HNO3 formation following an SPE); and WACCM-rSIC (standard WACCM with a reduction of SIC chemistry using the SEM-CM method). The standard WACCM misses the HNO3 enhancement during the SPE, while the full and reduced model versions predict significant NOx, HOx and HNO3 enhancements in the mesosphere during solar proton events. The SEM-CM reduction also identifies the important ion-molecule reactions that affect the partitioning of odd nitrogen (NOx), odd hydrogen (HOx) and O3 in the stratosphere and mesosphere.

Synthesis of Silicon Nitride and Silicon Carbide Nanocomposites through High Energy Milling of Waste Silica Fume for Structural Applications

NASA Astrophysics Data System (ADS)

Suri, Jyothi

Nanocomposites have been widely used in a multitude of applications in electronics and structural components because of their improved mechanical, electrical, and magnetic properties. Silicon nitride/Silicon carbide (Si 3N4/SiC) nanocomposites have been studied intensively for low and high temperature structural applications, such as turbine and automobile engine components, ball bearings, turbochargers, as well as energy applications due to their superior wear resistance, high temperature strength, high oxidation resistance and good creep resistance. Silica fume is the waste material produced during the manufacture of silicon and ferro-silicon alloys, and contains 94 to 97 wt.% SiO2. In the present dissertation, the feasibility of using waste silica fume as the raw material was investigated to synthesize (I) advanced nanocomposites of Si3N4/SiC, and (2) porous silicon carbide (SiC) for membrane applications. The processing approach used to convert the waste material to advanced ceramic materials was based on a novel process called, integrated mechanical and thermal activation process (IMTA) process. In the first part of the dissertation, the effect of parameters such as carbothermic nitridation and reduction temperature and the graphite concentration in the starting silica fume plus graphite mixture, were explored to synthesize nanocomposite powders with tailored amounts of Si3N4 and SiC phases. An effective way to synthesize carbon-free Si3N 4/SiC composite powders was studied to provide a clear pathway and fundamental understanding of the reaction mechanisms. Si3N4/SiC nanocomposite powders were then sintered using two different approaches, based on liquid phase sintering and spark plasma sintering processes, with Al 2O3 and Y2O3 as the sintering aids. The nanocomposites were investigated for their densification behavior, microstructure, and mechanical properties. Si3N4/SiC nanocomposites thus obtained were found to possess superior mechanical properties at much lower costs. The second part of the work has comprised of the successful fabrication of bilayered SiC membranes with a graded porosity, consisting of porous nano-SiC layer on the surface of a porous coarse-grained SiC support layer. The effect of different particle sizes of SiC in the support layers was systematically studied. Also, the effects of sintering temperature were investigated to control the pore size, particle size and overall density of the bi-layered SiC membrane.

Method Developed for Improving the Thermomechanical Properties of Silicon Carbide Matrix Composites

NASA Technical Reports Server (NTRS)

Bhatt, Ramakrishna T.; DiCarlo, James A.

2004-01-01

Today, a major thrust for achieving engine components with improved thermal capability is the development of fiber-reinforced silicon-carbide (SiC) matrix composites. These materials are not only lighter and capable of higher use temperatures than state-of-the-art metallic alloys and oxide matrix composites (approx. 1100 C), but they can provide significantly better static and dynamic toughness than unreinforced silicon-based monolithic ceramics. However, for successful application in advanced engine systems, the SiC matrix composites should be able to withstand component service stresses and temperatures for the desired component lifetime. Since the high-temperature structural life of ceramic materials is typically controlled by creep-induced flaw growth, a key composite property requirement is the ability to display high creep resistance under these conditions. Also, because of the possibility of severe thermal gradients in the components, the composites should provide maximum thermal conductivity to minimize the development of thermal stresses. State-of-the-art SiC matrix composites are typically fabricated via a three-step process: (1) fabrication of a component-shaped architectural preform reinforced by high-performance fibers, (2) chemical vapor infiltration of a fiber coating material such as boron nitride (BN) into the preform, and (3) infiltration of a SiC matrix into the remaining porous areas in the preform. Generally, the highest performing composites have matrices fabricated by the CVI process, which produces a SiC matrix typically more thermally stable and denser than matrices formed by other approaches. As such, the CVI SiC matrix is able to provide better environmental protection to the coated fibers, plus provide the composite with better resistance to crack propagation. Also, the denser CVI SiC matrix should provide optimal creep resistance and thermal conductivity to the composite. However, for adequate preform infiltration, the CVI SiC matrix process typically has to be conducted at temperatures below 1100 C, which results in a SiC matrix that is fairly dense, but contains metastable atomic defects and is nonstoichiometric because of a small amount of excess silicon. Because these defects typically exist at the matrix grain boundaries, they can scatter thermal phonons and degrade matrix creep resistance by enhancing grain-boundary sliding. To eliminate these defects and improve the thermomechanical properties of ceramic composites with CVI SiC matrices, researchers at the NASA Glenn Research Center developed a high-temperature treatment process that can be used after the CVI SiC matrix is deposited into the fiber preform.

Mutations in SID2, a novel gene in Saccharomyces cerevisiae, cause synthetic lethality with sic1 deletion and may cause a defect during S phase.

PubMed Central

Jacobson, M D; Muñoz, C X; Knox, K S; Williams, B E; Lu, L L; Cross, F R; Vallen, E A

2001-01-01

SIC1 encodes a nonessential B-type cyclin/CDK inhibitor that functions at the G1/S transition and the exit from mitosis. To understand more completely the regulation of these transitions, mutations causing synthetic lethality with sic1 Delta were isolated. In this screen, we identified a novel gene, SID2, which encodes an essential protein that appears to be required for DNA replication or repair. sid2-1 sic1 Delta strains and sid2-21 temperature-sensitive strains arrest preanaphase as large-budded cells with a single nucleus, a short spindle, and an approximately 2C DNA content. RAD9, which is necessary for the DNA damage checkpoint, is required for the preanaphase arrest of sid2-1 sic1 Delta cells. Analysis of chromosomes in mutant sid2-21 cells by field inversion gel electrophoresis suggests the presence of replication forks and bubbles at the arrest. Deleting the two S phase cyclins, CLB5 and CLB6, substantially suppresses the sid2-1 sic1 Delta inviability, while stabilizing Clb5 protein exacerbates the defects of sid2-1 sic1 Delta cells. In synchronized sid2-1 mutant strains, the onset of replication appears normal, but completion of DNA synthesis is delayed. sid2-1 mutants are sensitive to hydroxyurea indicating that sid2-1 cells may suffer DNA damage that, when combined with additional insult, leads to a decrease in viability. Consistent with this hypothesis, sid2-1 rad9 cells are dead or very slow growing even when SIC1 is expressed. PMID:11560884

Moissanite (SiC) with metal-silicide and silicon inclusions from tuff of Israel: Raman spectroscopy and electron microscope studies

NASA Astrophysics Data System (ADS)

Dobrzhinetskaya, Larissa; Mukhin, Pavel; Wang, Qin; Wirth, Richard; O'Bannon, Earl; Zhao, Wenxia; Eppelbaum, Lev; Sokhonchuk, Tatiana

2018-06-01

Here, we present studies of natural SiC that occurs in situ in tuff related to the Miocene alkaline basalt formation deposited in northern part of Israel. Raman spectroscopy, SEM and FIB-assisted TEM studies revealed that SiC is primarily hexagonal polytypes 4H-SiC and 6H-SiC, and that the 4H-SiC polytype is the predominant phase. Both SiC polytypes contain crystalline inclusions of silicon (Sio) and inclusions of metal-silicide with varying compositions (e.g. Si58V25Ti12Cr3Fe2, Si41Fe24Ti20Ni7V5Zr3, and Si43Fe40Ni17). The silicides crystal structure parameters match Si2TiV5 (Pm-3m space group, cubic), FeSi2Ti (Pbam space group, orthorhombic), and FeSi2 (Cmca space group, orthorhombic) respectively. We hypothesize that SiC was formed in a local ultra-reduced environment at respectively shallow depths (60-100 km), through a reaction of SiO2 with highly reducing fluids (H2O-CH4-H2-C2H6) arisen from the mantle "hot spot" and passing through alkaline basalt magma reservoir. SiO2 interacting with the fluids may originate from the walls of the crustal rocks surrounding this magmatic reservoir. This process led to the formation of SiC and accompanied by the reducing of metal-oxides to native metals, alloys, and silicides. The latter were trapped by SiC during its growth. Hence, interplate "hot spot" alkali basalt volcanism can now be included as a geological environment where SiC, silicon, and silicides can be found.

Putting vital stains in context.

PubMed

Efron, Nathan

2013-07-01

While vital staining remains a cornerstone in the diagnosis of ocular disease and contact lens complications, there are many misconceptions regarding the properties of commonly used dyes by eye-care practitioners and what is and what is not corneal staining after instillation of sodium fluorescein. Similarly, the proper use and diagnostic utility of rose Bengal and lissamine green B, the other two ophthalmic dyes commonly used for assessing ocular complications, have similarly remained unclear. Due to the limitations of vital stains for definitive diagnosis, concomitant signs and symptoms in addition to a complete patient history are required. Over the past decade, there have been many reports of a type of corneal staining--often referred to as solution-induced corneal staining (SICS)--that is observed with the use of multipurpose solutions in combination with soft lenses, more specifically silicone hydrogel lenses. Some authors believe that SICS is a sign of lens/solution incompatibility; however, new research shows that SICS may be neither a measure of lens/solution biocompatibility nor 'true' corneal staining, as that observed in pathological situations. A large component of SICS may be a benign phenomenon, known as preservative-associated transient hyperfluorescence (PATH). There is a lack of correlated signs and/or symptoms with SICS/PATH. Several properties of SICS/PATH, such as appearance and duration, differentiate it from pathological corneal staining. This paper reviews the properties of vital stains, their use and limitations in assessment of the ocular surface, the aetiology of corneal staining, characteristics of SICS/PATH that differentiate it from pathological corneal staining and what the SICS/PATH phenomenon means for contact lens-wearing patients. © 2012 The Author. Clinical and Experimental Optometry © 2012 Optometrists Association Australia.

Effect of neutron irradiation on defect evolution in Ti 3SiC 2 and Ti 2AlC

DOE PAGES

Tallman, Darin J.; He, Lingfeng; Garcia-Diaz, Brenda L.; ...

2015-10-23

Here, we report on the characterization of defects formed in polycrystalline Ti 3SiC 2 and Ti 2AlC samples exposed to neutron irradiation – up to 0.1 displacements per atom (dpa) at 350 ± 40 °C or 695 ± 25 °C, and up to 0.4 dpa at 350 ± 40 °C. Black spots are observed in both Ti 3SiC 2 and Ti 2AlC after irradiation to both 0.1 and 0.4 dpa at 350 °C. After irradiation to 0.1 dpa at 695 °C, small basal dislocation loops, with a Burgers vector of b = 1/2 [0001] are observed in both materials. Atmore » 9 ± 3 and 10 ± 5 nm, the loop diameters in the Ti 3SiC 2 and Ti 2AlC samples, respectively, were comparable. At 1 × 10 23 loops/m 3, the dislocation loop density in Ti 2AlC was ≈1.5 orders of magnitude greater than in Ti 3SiC 2, at 3 x 10 21 loops/m3. After irradiation at 350 °C, extensive microcracking was observed in Ti 2AlC, but not in Ti 3SiC 2. The room temperature electrical resistivities increased as a function of neutron dose for all samples tested, and appear to saturate in the case of Ti 3SiC 2. The MAX phases are unequivocally more neutron radiation tolerant than the impurity phases TiC and Al 2O 3. Based on these results, Ti 3SiC 2 appears to be a more promising MAX phase candidate for high temperature nuclear applications than Ti 2AlC.« less

11.4% Efficiency non-fullerene polymer solar cells with trialkylsilyl substituted 2D-conjugated polymer as donor.

PubMed

Bin, Haijun; Gao, Liang; Zhang, Zhi-Guo; Yang, Yankang; Zhang, Yindong; Zhang, Chunfeng; Chen, Shanshan; Xue, Lingwei; Yang, Changduk; Xiao, Min; Li, Yongfang

2016-12-01

Simutaneously high open circuit voltage and high short circuit current density is a big challenge for achieving high efficiency polymer solar cells due to the excitonic nature of organic semdonductors. Herein, we developed a trialkylsilyl substituted 2D-conjugated polymer with the highest occupied molecular orbital level down-shifted by Si-C bond interaction. The polymer solar cells obtained by pairing this polymer with a non-fullerene acceptor demonstrated a high power conversion efficiency of 11.41% with both high open circuit voltage of 0.94 V and high short circuit current density of 17.32 mA cm -2 benefitted from the complementary absorption of the donor and acceptor, and the high hole transfer efficiency from acceptor to donor although the highest occupied molecular orbital level difference between the donor and acceptor is only 0.11 eV. The results indicate that the alkylsilyl substitution is an effective way in designing high performance conjugated polymer photovoltaic materials.

Melt infiltration of silicon carbide compacts. I - Study of infiltration dynamics

NASA Technical Reports Server (NTRS)

Asthana, Rajiv; Rohatgi, Pradeep K.

1992-01-01

Countergravity, pressure-assisted infiltration with a 2014 Al alloy of suitably tamped porous compacts of platelet shaped single crystals of alpha (hexagonal) silicon carbide was used to measure particulate wettability and infiltration kinetics under dynamic conditions relevant to pressure casting of composites. A threshold pressure P(th) for ingression of the infiltrant was identified based on the experimental penetration length versus pressure profiles for a range of experimental variables which included infiltration pressure, infiltration time, SiC size and SiC surface chemistry. The results showed that P(th) decreased whereas the penetration length increased with increasing SiC size and infiltration time. Cu-coated SiC led to lower P(th) and larger penetration lengths compared to uncoated SiC under identical conditions. These observations have been discussed in the light of theoretical models of infiltration and the kinetics of wetting.

A study of metal-ceramic wettability in SiC-Al using dynamic melt infiltration of SiC

NASA Technical Reports Server (NTRS)

Asthana, R.; Rohatgi, P. K.

1993-01-01

Pressure-assisted infiltration with a 2014 Al alloy of plain and Cu-coated single crystal platelets of alpha silicon carbide was used to study particulate wettability under dynamic conditions relevant to pressure casting of metal-matrix composites. The total penetration length of infiltrant metal in porous compacts was measured at the conclusion of solidification as a function of pressure, infiltration time, and SiC size for both plain and Cu-coated SiC. The experimental data were analyzed to obtain a threshold pressure for the effect of melt intrusion through SiC compacts. The threshold pressure was taken either directly as a measure of wettability or converted to an effective wetting angle using the Young-Laplace capillary equation. Cu coating resulted in partial but beneficial improvements in wettability as a result of its dissolution in the melt, compared to uncoated SiC.

Silicon Carbide Sensors and Electronics for Harsh Environment Applications

NASA Technical Reports Server (NTRS)

Evans, Laura J.

2007-01-01

Silicon carbide (SiC) semiconductor has been studied for electronic and sensing applications in extreme environment (high temperature, extreme vibration, harsh chemical media, and high radiation) that is beyond the capability of conventional semiconductors such as silicon. This is due to its near inert chemistry, superior thermomechanical and electronic properties that include high breakdown voltage and wide bandgap. An overview of SiC sensors and electronics work ongoing at NASA Glenn Research Center (NASA GRC) will be presented. The main focus will be two technologies currently being investigated: 1) harsh environment SiC pressure transducers and 2) high temperature SiC electronics. Work highlighted will include the design, fabrication, and application of SiC sensors and electronics, with recent advancements in state-of-the-art discussed as well. These combined technologies are studied for the goal of developing advanced capabilities for measurement and control of aeropropulsion systems, as well as enhancing tools for exploration systems.

Facile electrosynthesis of silicon carbide nanowires from silica/carbon precursors in molten salt.

PubMed

Zou, Xingli; Ji, Li; Lu, Xionggang; Zhou, Zhongfu

2017-08-30

Silicon carbide nanowires (SiC NWs) have attracted intensive attention in recent years due to their outstanding performances in many applications. A large-scale and facile production of SiC NWs is critical to its successful application. Here, we report a simple method for the production of SiC NWs from inexpensive and abundantly available silica/carbon (SiO 2 /C) precursors in molten calcium chloride. The solid-to-solid electroreduction and dissolution-electrodeposition mechanisms can easily lead to the formation of homogenous SiC NWs. This template/catalyst-free approach greatly simplifies the synthesis procedure compared to conventional methods. This general strategy opens a direct electrochemical route for the conversion of SiO 2 /C into SiC NWs, and may also have implications for the electrosynthesis of other micro/nanostructured metal carbides/composites from metal oxides/carbon precursors.

Preparation and Anodizing of SiCp/Al Composites with Relatively High Fraction of SiCp.

PubMed

Wang, Bin; Qu, Shengguan; Li, Xiaoqiang

2018-01-01

By properly proportioned SiC particles with different sizes and using squeeze infiltration process, SiCp/Al composites with high volume fraction of SiC content (Vp = 60.0%, 61.2%, 63.5%, 67.4%, and 68.0%) were achieved for optical application. The flexural strength of the prepared SiC p /Al composites was higher than 483 MPa and the elastic modulus was increased from 174.2 to 206.2 GPa. With an increase in SiC volume fraction, the flexural strength and Poisson's ratio decreased with the increase in elastic modulus. After the anodic oxidation treatment, an oxidation film with porous structure was prepared on the surface of the composite and the oxidation film was uniformly distributed. The anodic oxide growth rate of composite decreased with SiC content increased and linearly increased with anodizing time.

Observations of Ag diffusion in ion implanted SiC

DOE PAGES

Gerczak, Tyler J.; Leng, Bin; Sridharan, Kumar; ...

2015-03-17

The nature and magnitude of Ag diffusion in SiC has been a topic of interest in connection with the performance of tristructural isotropic (TRISO) coated particle fuel for high temperature gas-cooled nuclear reactors. Ion implantation diffusion couples have been revisited to continue developing a more complete understanding of Ag fission product diffusion in SiC. Ion implantation diffusion couples fabricated from single crystal 4H-SiC and polycrystalline 3C-SiC substrates and exposed to 1500–1625°C, were investigated in this study by transmission electron microscopy and secondary ion mass spectrometry (SIMS). The high dynamic range of SIMS allowed for multiple diffusion régimes to be investigated,more » including enhanced diffusion by implantation-induced defects and grain boundary (GB) diffusion in undamaged SiC. Lastly, estimated diffusion coefficients suggest GB diffusion in bulk SiC does not properly describe the release observed from TRISO fuel.« less

Metallic impurities-silicon carbide interaction in HTGR fuel particles

NASA Astrophysics Data System (ADS)

Minato, Kazuo; Ogawa, Toru; Kashimura, Satoru; Fukuda, Kousaku; Shimizu, Michio; Tayama, Yoshinobu; Takahashi, Ishio

1990-12-01

Corrosion of the coating layers of silicon carbide (SiC) by metallic impurities was observed in irradiated Triso-coated uranium dioxide particles for high temperature gas-cooled reactors with an optical microscope and an electron probe micro-analyzer. The SiC layers were attacked from the outside of the particles. The main element observed in the corroded areas was iron, but sometimes iron and nickel were found. These elements must have been contained as impurities in the graphite matrix in which the coated particles were dispersed. Since these elements are more stable thermodynamically in the presence of SiC than in the presence of graphite at irradiation temperatures, they were transferred to the SiC layer to form more stable silicides. During fuel manufacturing processes, intensive care should be taken to prevent the fuel from being contaminated with those elements which react with SiC.

Preparation of uranium fuel kernels with silicon carbide nanoparticles using the internal gelation process

NASA Astrophysics Data System (ADS)

Hunt, R. D.; Silva, G. W. C. M.; Lindemer, T. B.; Anderson, K. K.; Collins, J. L.

2012-08-01

The US Department of Energy continues to use the internal gelation process in its preparation of tristructural isotropic coated fuel particles. The focus of this work is to develop uranium fuel kernels with adequately dispersed silicon carbide (SiC) nanoparticles, high crush strengths, uniform particle diameter, and good sphericity. During irradiation to high burnup, the SiC in the uranium kernels will serve as getters for excess oxygen and help control the oxygen potential in order to minimize the potential for kernel migration. The hardness of SiC required modifications to the gelation system that was used to make uranium kernels. Suitable processing conditions and potential equipment changes were identified so that the SiC could be homogeneously dispersed in gel spheres. Finally, dilute hydrogen rather than argon should be used to sinter the uranium kernels with SiC.

Update on Development of SiC Multi-Chip Power Modules

NASA Technical Reports Server (NTRS)

Lostetter, Alexander; Cilio, Edgar; Mitchell, Gavin; Schupbach, Roberto

2008-01-01

Progress has been made in a continuing effort to develop multi-chip power modules (SiC MCPMs). This effort at an earlier stage was reported in 'SiC Multi-Chip Power Modules as Power-System Building Blocks' (LEW-18008-1), NASA Tech Briefs, Vol. 31, No. 2 (February 2007), page 28. The following recapitulation of information from the cited prior article is prerequisite to a meaningful summary of the progress made since then: 1) SiC MCPMs are, more specifically, electronic power-supply modules containing multiple silicon carbide power integrated-circuit chips and silicon-on-insulator (SOI) control integrated-circuit chips. SiC MCPMs are being developed as building blocks of advanced expandable, reconfigurable, fault-tolerant power-supply systems. Exploiting the ability of SiC semiconductor devices to operate at temperatures, breakdown voltages, and current densities significantly greater than those of conventional Si devices, the designs of SiC MCPMs and of systems comprising multiple SiC MCPMs are expected to afford a greater degree of miniaturization through stacking of modules with reduced requirements for heat sinking; 2) The stacked SiC MCPMs in a given system can be electrically connected in series, parallel, or a series/parallel combination to increase the overall power-handling capability of the system. In addition to power connections, the modules have communication connections. The SOI controllers in the modules communicate with each other as nodes of a decentralized control network, in which no single controller exerts overall command of the system. Control functions effected via the network include synchronization of switching of power devices and rapid reconfiguration of power connections to enable the power system to continue to supply power to a load in the event of failure of one of the modules; and, 3) In addition to serving as building blocks of reliable power-supply systems, SiC MCPMs could be augmented with external control circuitry to make them perform additional power-handling functions as needed for specific applications. Because identical SiC MCPM building blocks could be utilized in such a variety of ways, the cost and difficulty of designing new, highly reliable power systems would be reduced considerably. This concludes the information from the cited prior article. The main activity since the previously reported stage of development was the design, fabrication, and testing a 120- VDC-to-28-VDC modular power-converter system composed of eight SiC MCPMs in a 4 (parallel)-by-2 (series) matrix configuration, with normally-off controllable power switches. The SiC MCPM power modules include closed-loop control subsystems and are capable of operating at high power density or high temperature. The system was tested under various configurations, load conditions, load-transient conditions, and failure-recovery conditions. Planned future work includes refinement of the demonstrated modular system concept and development of a new converter hardware topology that would enable sharing of currents without the need for communication among modules. Toward these ends, it is also planned to develop a new converter control algorithm that would provide for improved sharing of current and power under all conditions, and to implement advanced packaging concepts that would enable operation at higher power density.

LOW ACTIVATION JOINING OF SIC/SIC COMPOSITES FOR FUSION APPLICATIONS: MODELING DUAL-PHASE MICROSTRUCTURES AND DISSIMILAR MATERIAL JOINTS

DOE Office of Scientific and Technical Information (OSTI.GOV)

Henager, Charles H.; Nguyen, Ba Nghiep; Kurtz, Richard J.

2016-03-31

Finite element continuum damage models (FE-CDM) have been developed to simulate and model dual-phase joints and cracked joints for improved analysis of SiC materials in nuclear environments. This report extends the analysis from the last reporting cycle by including results from dual-phase models and from cracked joint models.

Nucleation of uniform mono- and bilayer epitaxial graphene on SiC(0001)

NASA Astrophysics Data System (ADS)

Wu, Xiaosong; Zhang, Rui; Dong, Yunliang; Guo, Shuai; Kong, Wenjie; Liao, Zhimin; Yu, Dapeng

2012-02-01

Early stage of epitaxial graphene growth on SiC(0001) has been investigated. Using the confinement controlled sublimation (CCS) method, we has achieved well controlled growth and been able to see the formation of mono- and bilayer graphene islands. The growth features reveal the intriguing growth mechanism. In particular, a new ``stepdown'' growth mode has been identified. Graphene can propagate tens of micrometers across many SiC steps, while, most importantly, step bunching is avoided and the initial regular stepped SiC surface morphology is preserved. The stepdown growth demonstrates a route towards uniform epitaxial graphene in wafer size without sacrificing the initial substrate surface morphology.

Creep deformation of grain boundary in a highly crystalline SiC fibre.

PubMed

Shibayama, Tamaki; Yoshida, Yutaka; Yano, Yasuhide; Takahashi, Heishichiro

2003-01-01

Silicon carbide (SiC) matrix composites reinforced by SiC fibres (SiC/SiC composites) are currently being considered as alternative materials in high Ni alloys for high-temperature applications, such as aerospace components, gas-turbine energy-conversion systems and nuclear fusion reactors, because of their high specific strength and fracture toughness at elevated temperatures compared with monolithic SiC ceramics. It is important to evaluate the creep properties of SiC fibres under tensile loading in order to determine their usefulness as structural components. However, it would be hard to evaluate creep properties by monoaxial tensile properties when we have little knowledge on the microstructure of crept specimens, especially at the grain boundary. Recently, a simple fibre bend stress relaxation (BSR) test was introduced by Morscher and DiCarlo to address this problem. Interpretation of the fracture mechanism at the grain boundary is also essential to allow improvement of the mechanical properties. In this paper, effects of stress applied by BSR test on microstructural evolution in advanced SiC fibres, such as Tyranno-SA including small amounts of Al, are described and discussed along with the results of microstructure analysis on an atomic scale by using advanced microscopy.

Understanding the Mechanism of SiC Plasma-Enhanced Chemical Vapor Deposition (PECVD) and Developing Routes toward SiC Atomic Layer Deposition (ALD) with Density Functional Theory.

PubMed

Filatova, Ekaterina A; Hausmann, Dennis; Elliott, Simon D

2018-05-02

Understanding the mechanism of SiC chemical vapor deposition (CVD) is an important step in investigating the routes toward future atomic layer deposition (ALD) of SiC. The energetics of various silicon and carbon precursors reacting with bare and H-terminated 3C-SiC (011) are analyzed using ab initio density functional theory (DFT). Bare SiC is found to be reactive to silicon and carbon precursors, while H-terminated SiC is found to be not reactive with these precursors at 0 K. Furthermore, the reaction pathways of silane plasma fragments SiH 3 and SiH 2 are calculated along with the energetics for the methane plasma fragments CH 3 and CH 2 . SiH 3 and SiH 2 fragments follow different mechanisms toward Si growth, of which the SiH 3 mechanism is found to be more thermodynamically favorable. Moreover, both of the fragments were found to show selectivity toward the Si-H bond and not C-H bond of the surface. On the basis of this, a selective Si deposition process is suggested for silicon versus carbon-doped silicon oxide surfaces.

Influence wt.% of SiC and borax on the mechanical properties of AlSi-Mg-TiB-SiC composite by the method of semi solid stir casting

NASA Astrophysics Data System (ADS)

Bhiftime, E. I.; Guterres, Natalino F. D. S.; Haryono, M. B.; Sulardjaka, Nugroho, Sri

2017-04-01

SiC particle reinforced metal matrix composites (MMCs) with solid semi stir casting method is becoming popular in recent application (automotive, aerospace). Stirring the semi solid condition is proven to enhance the bond between matrix and reinforcement. The purpose of this study is to investigate the effect of the SiC wt.% and the addition of borax on mechanical properties of composite AlSi-Mg-TiB-SiC and AlSi-Mg-TiB-SiC/Borax. Specimens was tested focusing on the density, porosity, tensile test, impact test microstructure and SEM. AlSi is used as a matrix reinforced by SiC with percentage variations (10, 15, 20 wt.%). Giving wt.% Borax which is the ratio of 1: 4 between wt.% SiC. The addition of 1.5% of TiB gives grain refinement. The use of semi-solid stir casting method is able to increase the absorption of SiC particles into a matrix AlSi evenly. The improved composite presented here can be used as a guideline to make a new composite.

Self-Interaction Chromatography of mAbs: Accurate Measurement of Dead Volumes.

PubMed

Hedberg, S H M; Heng, J Y Y; Williams, D R; Liddell, J M

2015-12-01

Measurement of the second virial coefficient B22 for proteins using self-interaction chromatography (SIC) is becoming an increasingly important technique for studying their solution behaviour. In common with all physicochemical chromatographic methods, measuring the dead volume of the SIC packed column is crucial for accurate retention data; this paper examines best practise for dead volume determination. SIC type experiments using catalase, BSA, lysozyme and a mAb as model systems are reported, as well as a number of dead column measurements. It was observed that lysozyme and mAb interacted specifically with Toyopearl AF-Formyl dead columns depending upon pH and [NaCl], invalidating their dead volume usage. Toyopearl AF-Amino packed dead columns showed no such problems and acted as suitable dead columns without any solution condition dependency. Dead volume determinations using dextran MW standards with protein immobilised SIC columns provided dead volume estimates close to those obtained using Toyopearl AF-Amino dead columns. It is concluded that specific interactions between proteins, including mAbs, and select SIC support phases can compromise the use of some standard approaches for estimating the dead volume of SIC columns. Two other methods were shown to provide good estimates for the dead volume.

Characterization of consecutive Streptococcus pyogenes isolates from patients with pharyngitis and bacteriological treatment failure: special reference to prtF1 and sic / drs.

PubMed

Brandt, C M; Allerberger, F; Spellerberg, B; Holland, R; Lütticken, R; Haase, G

2001-02-15

To analyze bacteriological treatment failure in streptococcal pharyngitis, 40 consecutive Streptococcus pyogenes isolates from 18 patients were characterized. For 17 patients, isolates were indistinguishable with respect to emm type, random amplified polymorphic DNA pattern, and presence of prtF1 encoding the fibronectin-binding protein F1. prtF1 was detected only in the 11 isolates (4 patients) with emm12 and in the single isolate with emm6. Further analysis by vir(mga) regulon typing, sequencing of sic encoding the streptococcal inhibitor of complement from 19 isolates with emm1 (9 patients), and sequencing of drs (distantly related sic) from 11 isolates with emm12 revealed distinct sic alleles with insertions and/or deletions in sic that corresponded to differences in restriction patterns of the vir(mga) regulon only for paired isolates of 2 patients. Among isolates with emm12, 2 novel drs alleles were found. Analysis of these data suggests that neither the presence of prtF1 nor the diversification of sic / drs is required for the persistence of S. pyogenes in pharyngitis.

Cold spraying SiC/Al metal matrix composites: effects of SiC contents and heat treatment on microstructure, thermophysical and flexural properties

NASA Astrophysics Data System (ADS)

Gyansah, L.; Tariq, N. H.; Tang, J. R.; Qiu, X.; Feng, B.; Huang, J.; Du, H.; Wang, J. Q.; Xiong, T. Y.

2018-02-01

In this paper, cold spray was used as an additive manufacturing method to fabricate 5 mm thick SiC/Al metal matrix composites with various SiC contents. The effects of SiC contents and heat treatment on the microstructure, thermophysical and flexural properties were investigated. Additionally, the composites were characterized for retention of SiC particulates, splat size, surface roughness and the progressive understanding of strengthening, toughening and cracking mechanisms. Mechanical properties were investigated via three-point bending test, thermophysical analysis, and hardness test. In the as-sprayed state, flexural strength increased from 95.3 MPa to 133.5 MPa, an appreciation of 40% as the SiC contents increased, and the main toughening and strengthening mechanisms were zigzag crack propagation and high retention of SiC particulates respectively. In the heat treatment conditions, flexural strength appreciated significantly compared to the as-sprayed condition and this was as a result of coarsening of pure Al splat. Crack branching, crack deflection and interface delamination were considered as the main toughening mechanisms at the heat treatment conditions. Experimental results were consistent with the measured CTE, hardness, porosity and flexural modulus.

Ag Transport Through Non-Irradiated and Irradiated SiC

DOE Office of Scientific and Technical Information (OSTI.GOV)

Szlufarska, Izabela; Morgan, Dane; Blanchard, James

Silicon carbide is the main barrier to diffusion of fission products in the current design of TRistuctural ISOtropic (TRISO) coated fuel particles, and Ag is one of the few fission products that have been shown to escape through this barrier. Because the SiC coating in TRISO is exposed to radiation throughout the lifetime of the fuel, understanding of how radiation changes the transport of the fission products is essential for the safety of the reactor. The goals of this project are: (i) to determine whether observed variation in integral release measurements of Ag through SiC can be explained by differencesmore » in grain size and grain boundary (GB) types among the samples; (2) to identify the effects of irradiation on diffusion of Ag through SiC; (3) to discover phenomena responsible for significant solubility of Ag in polycrystalline SiC. To address these goals, we combined experimental analysis of SiC diffusion couples with modeling studies of diffusion mechanisms through bulk and GBs of this material. Comparison between results obtained for pristine and irradiated samples brings in insights into the effects of radiation on Ag transport.« less

CVD of SiC and AlN using cyclic organometallic precursors

NASA Technical Reports Server (NTRS)

Interrante, L. V.; Larkin, D. J.; Amato, C.

1992-01-01

The use of cyclic organometallic molecules as single-source MOCVD precursors is illustrated by means of examples taken from our recent work on AlN and SiC deposition, with particular focus on SiC. Molecules containing (AlN)3 and (SiC)2 rings as the 'core structure' were employed as the source materials for these studies. The organoaluminum amide, (Me2AlNH2)3, was used as the AlN source and has been studied in a molecular beam sampling apparatus in order to determine the gas phase species present in a hot-wall CVD reactor environment. In the case of SiC CVD, a series of disilacyclobutanes (Si(XX')CH2)2 (with X and X' = H, CH3, and CH2SiH2CH3), were examined in a cold-wall, hot-stage CVD reactor in order to compare their relative reactivities and prospective utility as single-source CVD precursors. The parent compound, disilacyclobutane, (SiH2CH2)2, was found to exhibit the lowest deposition temperature (ca. 670 C) and to yield the highest purity SiC films. This precursor gave a highly textured, polycrystalline film on the Si(100) substrates.

Ultra-reducing conditions in average mantle peridotites and in podiform chromitites: a thermodynamic model for moissanite (SiC) formation

NASA Astrophysics Data System (ADS)

Golubkova, Anastasia; Schmidt, Max W.; Connolly, James A. D.

2016-05-01

Natural moissanite (SiC) is reported from mantle-derived samples ranging from lithospheric mantle keel diamonds to serpentinites to podiform chromitites in ophiolites related to suprasubduction zone settings (Luobusa, Dongqiao, Semail, and Ray-Iz). To simulate ultra-reducing conditions and the formation of moissanite, we compiled thermodynamic data for alloys (Fe-Si-C and Fe-Cr), carbides (Fe3C, Fe7C3, SiC), and Fe-silicides; these data were augmented by commonly used thermodynamic data for silicates and oxides. Computed phase diagram sections then constrain the P- T- fO2 conditions of SiC stability in the upper mantle. Our results demonstrate that: Moissanite only occurs at oxygen fugacities 6.5-7.5 log units below the iron-wustite buffer; moissanite and chromite cannot stably coexist; increasing pressure does not lead to the stability of this mineral pair; and silicates that coexist with moissanite have X Mg > 0.99. At upper mantle conditions, chromite reduces to Fe-Cr alloy at fO2 values 3.7-5.3 log units above the moissanite-olivine-(ortho)pyroxene-carbon (graphite or diamond) buffer (MOOC). The occurrence of SiC in chromitites and the absence of domains with almost Fe-free silicates suggest that ultra-reducing conditions allowing for SiC are confined to grain scale microenvironments. In contrast to previous ultra-high-pressure and/or temperature hypotheses for SiC origin, we postulate a low to moderate temperature mechanism, which operates via ultra-reducing fluids. In this model, graphite-/diamond-saturated moderately reducing fluids evolve in chemical isolation from the bulk rock to ultra-reducing methane-dominated fluids by sequestering H2O into hydrous phases (serpentine, brucite, phase A). Carbon isotope compositions of moissanite are consistent with an origin of such fluids from sediments originally rich in organic compounds. Findings of SiC within rocks mostly comprised by hydrous phases (serpentine + brucite) support this model. Both the hydrous phases and the limited diffusive equilibration of SiC with most minerals in the rocks indicate temperatures below 700-800 °C. Moissanite from mantle environments is hence a mineral that does not inform on pressure but on a low to moderate temperature environment involving ultra-reduced fluids. Any mineral in equilibrium with SiC could only contain traces of Fe2+ or Cr3+.

Synthesis and Characterization of MAX Ceramics (MAXCERs)

NASA Astrophysics Data System (ADS)

Nelson, Johnny Carl

This research has focused on the design and development of novel multifunctional MAX reinforced ceramics (MAXCERs). These MAXCERs were manufactured with 1-50 vol% ratios of ceramics to MAX phases. Chapter II reports on the synthesis and tribological behavior of Ti3SiC2 matrix composites by incorporating (1 and 6 vol%) Al2O3, (1 and 5 vol%) BN, and (1 and 5 vol%) B4C ceramic particulate additives in the matrix. All the composites were fabricated by pressureless sintering by using 1 wt% Ni as a sintering agent at 1550 °C for 2 hours. SEM and XRD studies showed that Al2O3 is relatively inert in the Ti3SiC 2 matrix whereas BN and B4C reacted significantly with the Ti3 SiC2 matrix to form TiB2. Detailed tribological studies showed that Ti3SiC2-1wt%Ni (baseline) samples showed dual type tribological behavior where the friction coefficient (micro) was low ( 0.2) during stage 1, thereafter micro increased sharply and transitioned into stage 2 ( 0.8). The addition of Al2O3 as an additive had little effect on the tribological behavior, but the addition of B4C and BN was able to enhance the tribological behavior by increasing the transition distance (TD). Chapter III reports on the synthesis and tribological behavior of TiB2 matrix composites by incorporating (10, 30, and 50 vol%) Ti3SiC2 ceramic particulate additives in the matrix. The fabrication parameters were similar to the Ti3SiC2 samples from Chapter II. There was minimal reaction between the TiB2 and the Ti3SiC2. Detailed tribological studies showed that TiB2 (baseline) and TiB2-10%Ti 3SiC2 samples showed an average micro of 0.29 and 0.28, respectively. TiB2-30%Ti3SiC2 and TiB 2-50%Ti3SiC2 showed dual-type tribological behavior where micro was low ( 0.25) during stage 1, thereafter micro increased gradually and transitioned into stage 2 ( 0.6). Low wear rates were seen for all samples.

Lung cancer incidence among Norwegian silicon carbide industry workers: associations with particulate exposure factors

PubMed Central

Kjærheim, Kristina; Føreland, Solveig; Eduard, Wijnand; Kjuus, Helge

2012-01-01

Objectives An increased lung cancer risk associated with total dust exposure in the silicon carbide (SiC) industry has previously been reported. The aim of the present study was to examine the relative importance of specific exposure factors by using a comprehensive, historic job exposure matrix based on about 8000 measurements. Methods Cumulative exposure to total and respirable dust, respirable quartz, cristobalite, and SiC particles and SiC fibres was assessed for 1687 long-term workers employed during 1913–2003 in the Norwegian SiC industry. Standardised incidence ratios for lung cancer, with follow-up during 1953–2008, were calculated stratified by cumulative exposure categories. Poisson regression analyses were performed using both categorised and log-transformed cumulative exposure variables. Results The lung cancer incidence was about twofold increased at the highest level of exposure to each of the exposure factors (standardised incidence ratios 1.9–2.3 for all agents). Internal analyses showed associations between exposure level and lung cancer incidence for all investigated factors, but a significant trend only for total dust and cristobalite. In multivariate analyses, cristobalite showed the most consistent associations, followed by SiC fibres. Conclusions The results indicated that crystalline silica in the form of cristobalite was the most important occupational exposure factor responsible for lung cancer excess in the Norwegian SiC industry. SiC fibres seemed to have an additional effect. PMID:22611173

Synthesis of SiC nanoparticles by SHG 532 nm Nd:YAG laser ablation of silicon in ethanol

NASA Astrophysics Data System (ADS)

Khashan, Khawla S.; Ismail, Raid A.; Mahdi, Rana O.

2018-06-01

In this work, colloidal spherical nanoparticles NPs of silicon carbide SiC have been synthesized using second harmonic generation 532 nm Nd:YAG laser ablation of silicon target dipped in ethanol solution at various laser fluences (1.5-5) J/cm2. X-Ray diffraction XRD, scanning electron microscopy SEM, transmission electron microscope TEM, Fourier transformed infrared spectroscopy FT-IR, Raman spectroscopy, photoluminescence PL spectroscopy, and UV-Vis absorption were employed to examine the structural, chemical and optical properties of SiC NPs. XRD results showed that all synthesised SiC nanoparticles are crystalline in nature and have hexagonal structure with preferred orientation along (103) plane. Raman investigation showed three characteristic peaks 764,786 and 954 cm-1, which are indexing to transverse optic TO phonon mode and longitudinal optic LO phonon mode of 4H-SiC structure. The optical absorption data showed that the values of optical energy gap of SiC nanoparticles prepared at 1.5 J/cm2 was 3.6 eV and was 3.85 eV for SiC synthesised at 5 J/cm2. SEM investigations confirmed that the nanoparticles synthesised at 5 J/cm2 are agglomerated to form larger particles. TEM measurements showed that SiC particles prepared at 1.5 J/cm2 have spherical shape with average size of 25 nm, while the particles prepared at 5 J/cm2 have an average size of 55 nm.

Comparison of ocular comfort, vision, and SICS during silicone hydrogel contact lens daily wear.

PubMed

Diec, Jennie; Evans, Victoria E; Tilia, Daniel; Naduvilath, Thomas; Holden, Brien A; Lazon de la Jara, Percy

2012-01-01

The aim of this study was to investigate the relationship between solution-induced corneal staining (SICS) and silicone hydrogel contact lens comfort and vision. A retrospective analysis of a series of open-label studies were conducted with 24 groups of approximately 40 participants, each wearing 1 of 6 silicone hydrogel contact lenses with 1 of 4 lens care products bilaterally for 3 months of daily wear. The presence of SICS and subjective ocular ratings were collected at 2 weeks and at 1 and 3 months. A total of 1,051 participants were enrolled. The participants with SICS rated significantly less favorably than did the participants without SICS for comfort during the day (7.9±1.7 vs. 8.5±1.4, P=0.03), comfort at the end of the day (6.6±2.1 vs. 7.4±1.9, P=0.03), overall dryness (7.4±1.9 vs. 8.0±1.7, P=0.04), dryness at the end of the day (6.7±2.2 vs. 7.5±2.1, P=0.01), feelings of burning and stinging (8.5±2.0 vs. 8.9±1.8, P=0.02), and overall vision (8.2±1.6 vs. 8.7±1.3, P<0.001). The participants with SICS had lower subjective comfort and vision compared with those who did not experience SICS.

Modeling and testing miniature torsion specimens for SiC joining development studies for fusion

DOE PAGES

Henager, Jr., C. H.; Nguyen, Ba N.; Kurtz, Richard J.; ...

2015-08-05

The international fusion community has designed a miniature torsion specimen for neutron irradiation studies of joined SiC and SiC/SiC composite materials. For this research, miniature torsion joints based on this specimen design were fabricated using displacement reactions between Si and TiC to produce Ti 3SiC 2 + SiC joints with SiC and tested in torsion-shear prior to and after neutron irradiation. However, many miniature torsion specimens fail out-of-plane within the SiC specimen body, which makes it problematic to assign a shear strength value to the joints and makes it difficult to compare unirradiated and irradiated strengths to determine irradiation effects.more » Finite element elastic damage and elastic–plastic damage models of miniature torsion joints are developed that indicate shear fracture is more likely to occur within the body of the joined sample and cause out-of-plane failures for miniature torsion specimens when a certain modulus and strength ratio between the joint material and the joined material exists. The model results are compared and discussed with regard to unirradiated and irradiated test data for a variety of joint materials. The unirradiated data includes Ti 3SiC 2 + SiC/CVD-SiC joints with tailored joint moduli, and includes steel/epoxy and CVD-SiC/epoxy joints. Finally, the implications for joint data based on this sample design are discussed.« less

CTE homogeneity, isotropy and reproducibility in large parts made of sintered SiC

NASA Astrophysics Data System (ADS)

Bougoin, Michel; Castel, Didier; Levallois, Franck

2017-11-01

For Herschel SiC primary mirror purpose, a new approach of comparative CTE measurement has been developed; it is based on the well known bimetallic effect ("biceramic" in this case) and also optical measurements. This method offers a good CTE comparison capability in the range of 170-420K (extensible to 5-420K) depending of the thermal test facilities performance, with a resolution of only 0.001 μm/m.K. The Herschel primary mirror is made of 12 SiC segments which are brazed together. The CTE of each segment has been compared with the one of a witness sample and no visible change, higher than the measurement accuracy, has been observed. Furthermore, a lot of samples have been cut out from a spare segment, from different places and also from all X, Y and Z direction of the reference frame. No deviation was seen in all of these tests, thus demonstrating the very good homogeneity, reproducibility and isotropy of the Boostec® SiC material. Some recent literature about SiC material measurements at cryogenic temperature shows a better behaviour of Boostec® SiC material in comparison with other kind of SiC which are also candidate for space optics, in particular for isotropy purpose. After a review of the available literature, this paper describes the comparative CTE measurement method and details the results obtained during the measurement campaigns related to Herschel project.

Effects of Interface Coating and Nitride Enhancing Additive on Properties of Hi-Nicalon SiC Fiber Reinforced Reaction-Bonded Silicon Nitride Composites

NASA Technical Reports Server (NTRS)

Bhatt, Ramakrishana T.; Hull, David R.; Eldridge, Jeffrey I.; Babuder, Raymond

2000-01-01

Strong and tough Hi-Nicalon SiC fiber reinforced reaction-bonded silicon nitride matrix composites (SiC/ RBSN) have been fabricated by the fiber lay-up approach. Commercially available uncoated and PBN, PBN/Si-rich PBN, and BN/SiC coated SiC Hi-Nicalon fiber tows were used as reinforcement. The composites contained approximately 24 vol % of aligned 14 micron diameter SiC fibers in a porous RBSN matrix. Both one- and two-dimensional composites were characterized. The effects of interface coating composition, and the nitridation enhancing additive, NiO, on the room temperature physical, tensile, and interfacial shear strength properties of SiC/RBSN matrix composites were evaluated. Results indicate that for all three coated fibers, the thickness of the coatings decreased from the outer periphery to the interior of the tows, and that from 10 to 30 percent of the fibers were not covered with the interface coating. In the uncoated regions, chemical reaction between the NiO additive and the SiC fiber occurs causing degradation of tensile properties of the composites. Among the three interface coating combinations investigated, the BN/SiC coated Hi-Nicalon SiC fiber reinforced RBSN matrix composite showed the least amount of uncoated regions and reasonably uniform interface coating thickness. The matrix cracking stress in SiC/RBSN composites was predicted using a fracture mechanics based crack bridging model.

Rare earth element abundances in presolar SiC

NASA Astrophysics Data System (ADS)

Ireland, T. R.; Ávila, J. N.; Lugaro, M.; Cristallo, S.; Holden, P.; Lanc, P.; Nittler, L.; Alexander, C. M. O'D.; Gyngard, F.; Amari, S.

2018-01-01

Individual isotope abundances of Ba, lanthanides of the rare earth element (REE) group, and Hf have been determined in bulk samples of fine-grained silicon carbide (SiC) from the Murchison CM2 chondrite. The analytical protocol involved secondary ion mass spectrometry with combined high mass resolution and energy filtering to exclude REE oxide isobars and Si-C-O clusters from the peaks of interest. Relative sensitivity factors were determined through analysis of NIST SRM reference glasses (610 and 612) as well as a trace-element enriched SiC ceramic. When normalised to chondrite abundances, the presolar SiC REE pattern shows significant deficits at Eu and Yb, which are the most volatile of the REE. The pattern is very similar to that observed for Group III refractory inclusions. The SiC abundances were also normalised to s-process model predictions for the envelope compositions of low-mass (1.5-3 M⊙) AGB stars with close-to-solar metallicities (Z = 0.014 and 0.02). The overall trace element abundances (excluding Eu and Yb) appear consistent with the predicted s-process patterns. The depletions of Eu and Yb suggest that these elements remained in the gas phase during the condensation of SiC. The lack of depletion in some other moderately refractory elements (like Ba), and the presence of volatile elements (e.g. Xe) indicates that these elements were incorporated into SiC by other mechanisms, most likely ion implantation.

Mechanical Properties - Structure Correlation for Commercial Specification of Cast Particulate Metal Matrix Composites

DOE Office of Scientific and Technical Information (OSTI.GOV)

Pradeep Rohatgi

2002-12-31

In this research, the effects of casting foundry, testing laboratory, surface conditions, and casting processes on the mechanical properties of A359-SiC composites were identified. To observe the effects, A359-SiC composites with 20 and 305 SiC particles were cast at three different foundries and tested at three different laboratories. The composites were cast in sand and permanent molds and tested as-cast and machined conditions. To identify the effect of the volume fraction and distribution of particles on the properties of the composites, particle distribution was determined using Clemex Image analysis systems, and particle volume fraction was determined using wet chemical analysismore » and Clemex Image analysis systems. The microstructure and fractured surfaces of the samples were analyzed using SEM, and EDX analysis was done to analyze chemical reaction between the particles and the matrix. The results of the tensile strengths exhibited that the tensile strengths depend on the density and porosity of the composites; in general the higher tensile strength is associated with lower porosity and higher density. In some cases, composites with lower density were higher than these with higher density. In the Al-20% SiC samples, the composites with more inclusions exhibited a lower tensile strength than the ones with fewer inclusions. This suggests that macroscopic casting defects such as micro-porosity, shrinkage porosity and inclusions appear to strongly influence the tensile strength more than the microstructure and particle distribution. The fatigue properties of A359/20 vol.% SiC composites were investigated under strain controlled conditions. Hysteresis loops obtained from strain controlled cyclic loading of 20% SiCp reinforced material did not exhibit any measurable softening or hardening. The fatigue life of Al-20% SiC heat treated alloy at a given total strain showed wide variation in fatigue life, which appeared to be related to factors such as inclusions, porosity, and particle distribution. The inclusions and porosity on the fracture surfaces seem to have a more significant influence on the fatigue life of cast Al-20% SiC as compared to other variables, including SiC particle volume percentage and its distribution. Striations were generally not visible on the fracture surface of the composites. In many specimens, SiC particle fracture was also observed. Fracture was more severe around pores and inclusions than in the matrix away from them. Inclusions and porosity seem to have a much stronger influence on fatigue behavior than the particle distribution. The analysis suggests that the enhancement of fatigue behavior of cast MMCs requires a decrease in the size of defects, porosity, and inclusions. The particle volume fraction determined using wet chemical analysis gives values of SiC vol.% which are closer to the nominal Sic % than the values of SiC% obtained by ultrasonic and Clemex Image Analysis system. In view of ALCAN's recommendation one must use wet chemical analysis for determining the volume percent SiC.« less

Nanoporous SiC: a candidate semi-permeable material for biomedical applications.

PubMed

Rosenbloom, A J; Sipe, D M; Shishkin, Y; Ke, Y; Devaty, R P; Choyke, W J

2004-12-01

We have fabricated free-standing SiC nanoporous membranes in both p -type and n -type material. We showed that these membranes will permit the diffusion of proteins up to 29000 Daltons, while excluding larger proteins. By using radioactively labeled albumin, we also show that porous SiC has very low protein adsorption, comparable to the best commercially available polymer nanoporous membrane.

Effect of hot plastic deformation on the structural state of a Al-10%SiC composite

NASA Astrophysics Data System (ADS)

Pugacheva, N. B.; Vichuzhanin, D. I.; Michurov, N. S.; Smirnov, A. S.

2017-12-01

The paper studies the microstructure of honeycomb aluminum matrix composites with a granulated Al-Zn-Cu-Mg alloy matrix filled SiC particles amounting to 10 vol % after hot plastic deformation at near-solidus temperatures. It demonstrates the possibility of the collapse of the SiC filler network and the formation of filler clusters separated from each other.

Innovative Processing of Composites for Ultra-High Temperature Applications. Book 3

DTIC Science & Technology

1993-11-01

SiC Samples Prepared with Four Preceramic Polymer Infiltration / Pyrolysis (at 15750C) Cycles Figure 21 Scanning Electron...Micrograph of Large Pores near the Surface of Siliconized SIC Sample with Four Preceramic Polymer Infiltration / Pyrolysis (at 1575*C) Cycles II...In order to achieve dense, bulk composites with maximum SiC /Si ratio, two infiltration / pyrolysis cycles were used. S (4) After siliconization,

Synthesis of micro-sized interconnected Si-C composites

DOEpatents

Wang, Donghai; Yi, Ran; Dai, Fang

2016-02-23

Embodiments provide a method of producing micro-sized Si--C composites or doped Si--C and Si alloy-C with interconnected nanoscle Si and C building blocks through converting commercially available SiO.sub.x (0

Formation of silicon nanocrystals in silicon carbide using flash lamp annealing

NASA Astrophysics Data System (ADS)

Weiss, Charlotte; Schnabel, Manuel; Prucnal, Slawomir; Hofmann, Johannes; Reichert, Andreas; Fehrenbach, Tobias; Skorupa, Wolfgang; Janz, Stefan

2016-09-01

During the formation of Si nanocrystals (Si NC) in SixC1-x layers via solid-phase crystallization, the unintended formation of nanocrystalline SiC reduces the minority carrier lifetime and therefore the performance of SixC1-x as an absorber layer in solar cells. A significant reduction in the annealing time may suppress the crystallization of the SiC matrix while maintaining the formation of Si NC. In this study, we investigated the crystallization of stoichiometric SiC and Si-rich SiC using conventional rapid thermal annealing (RTA) and nonequilibrium millisecond range flash lamp annealing (FLA). The investigated SixC1-x films were prepared by plasma-enhanced chemical vapor deposition and annealed at temperatures from 700 °C to 1100 °C for RTA and at flash energies between 34 J/cm2 and 62 J/cm2 for FLA. Grazing incidence X-ray diffraction and Fourier transformed infrared spectroscopy were conducted to investigate hydrogen effusion, Si and SiC NC growth, and SiC crystallinity. Both the Si content and the choice of the annealing process affect the crystallization behavior. It is shown that under certain conditions, FLA can be successfully utilized for the formation of Si NC in a SiC matrix, which closely resembles Si NC in a SiC matrix achieved by RTA. The samples must have excess Si, and the flash energy should not exceed 40 J/cm2 and 47 J/cm2 for Si0.63C0.37 and Si0.77C0.23 samples, respectively. Under these conditions, FLA succeeds in producing Si NC of a given size in less crystalline SiC than RTA does. This result is discussed in terms of nucleation and crystal growth using classical crystallization theory. For FLA and RTA samples, an opposite relationship between NC size and Si content was observed and attributed either to the dependence of H effusion on Si content or to the optical absorption properties of the materials, which also depend on the Si content.

Surgical informed consent in obstetric and gynecologic surgeries: experience from a comprehensive teaching hospital in Southern Ethiopia.

PubMed

Teshome, Million; Wolde, Zenebe; Gedefaw, Abel; Tariku, Mequanent; Asefa, Anteneh

2018-05-24

Surgical Informed Consent (SIC) has long been recognized as an important component of modern medicine. The ultimate goals of SIC are to improve clients' understanding of the intended procedure, increase client satisfaction, maintain trust between clients and health providers, and ultimately minimize litigation issues related to surgical procedures. The purpose of the current study is to assess the comprehensiveness of the SIC process for women undergoing obstetric and gynecologic surgeries. A hospital-based cross-sectional study was undertaken at Hawassa University Comprehensive Specialized Hospital (HUCSH) in November and December, 2016. A total of 230 women who underwent obstetric and/or gynecologic surgeries were interviewed immediately after their hospital discharge to assess their experience of the SIC process. Thirteen components of SIC were used based on international recommendations, including the Royal College of Surgeon's standards of informed consent practices for surgical procedures. Descriptive summaries are presented in tables and figures. Forty percent of respondents were aged between 25 and 29 years. Nearly a quarter (22.6%) had no formal education. More than half (54.3%) of respondents had undergone an emergency surgical procedure. Only 18.4% of respondents reported that the surgeon performing the operation had offered SIC, while 36.6% of respondents could not recall who had offered SIC. All except one respondent provided written consent to undergo a surgical procedure. However, 8.3% of respondents received SIC service while already on the operation table for their procedure. Only 73.9% of respondents were informed about the availability (or lack thereof) of alternative treatment options. Additionally, a majority of respondents were not informed about the type of anesthesia to be used (88.3%) and related complications (87.4%). Only 54.2% of respondents reported that they had been offered at least six of the 13 SIC components used by the investigators. There is gap in the provision of comprehensive and standardized pre-operative counseling for obstetric and gynecologic surgeries in the study hospital. This has a detrimental effect on the overall quality of care clients receive, specifically in terms of client expectations and information needs.

Oxidation of Ultra-High Temperature Ceramics in Water Vapor

NASA Technical Reports Server (NTRS)

Nguyen, QuynhGiao N.; Opila, Elizabeth J.; Robinson, Raymond C.

2003-01-01

Ultra high temperature ceramics (UHTCs) including HfB2 + SiC (20% by volume), ZrB2 + SiC (20% by volume) and ZrB2 + SiC (14% by volume) + C (30% by volume) have historically been evaluated as reusable thermal protection systems for hypersonic vehicles. This study investigates UHTCs for use as potential combustion and aeropropulsion engine materials. These materials were oxidized in water vapor (90%) using a cyclic vertical furnace at 1 atm. The total exposure time was 10 hours at temperatures of 1200, 1300, and 1400 C. CVD SiC was also evaluated as a baseline comparison. Weight change measurements, X-ray diffraction analyses, surface and cross-sectional SEM and EDS were performed. These results will be compared with tests ran in static air at temperatures of 1327, 1627, and 1927 C. Oxidation comparisons will also be made to the study by Tripp. A small number of high pressure burner rig (HPBR) results at 1100 and 1300 C will also be discussed. Specific weight changes at all three temperatures along with the SIC results are shown. SiC weight change is negligible at such short duration times. HB2 + SiC (HS) performed the best out of all the tested UHTCS for all exposure temperatures. ZrB2 + Sic (ZS) results indicate a slightly lower oxidation rate than that of ZrBl + SiC + C (ZCS) at 1200 and 1400 C, but a clear distinction can not be made based on the limited number of tested samples. Scanning electron micrographs of the cross-sections of all the UHTCs were evaluated. A representative area for HS is presented at 1400 C for 26 hours which was the composition with the least amount of oxidation. A continuous SiO2 scale is present in the outer most edge of the surface. An image of ZCS is presented at 1400 C for 10 hours, which shows the most degradation of all the compositions studied. Here, the oxide surface is a mixture of ZrSiO4, ZrO2 and SO2.

Quantification Of 4H- To 3C-Polymorphism In Silicon Carbide (SiC) Epilayers And An Investigation Of Recombination-Enhanced Dislocation Motion In SiC By Optical Emission Microscopy (Oem) Techniques

NASA Technical Reports Server (NTRS)

Speer, Kevin M.

2004-01-01

Environments that impose operational constraints on conventional silicon-(Si) based semiconductor devices frequently appear in military- and space-grade applications. These constraints include high temperature, high power, and high radiation environments. Silicon carbide (SiC), an alternative type of semiconductor material, has received abundant research attention in the past few years, owing to its radiation-hardened properties as well as its capability to withstand high temperatures and power levels. However, the growth and manufacture of SiC devices is still comparatively immature, and there are severe limitations in present crystal growth and device fabrication processes. Among these limitations is a variety of crystal imperfections known as defects. These imperfections can be point defects (e.g., vacancies and interstitials), line defects (e.g., edge and screw dislocations), or planar defects (e.g., stacking faults and double-positioning boundaries). All of these defects have been experimentally shown to be detrimental to the performance of electron devices made from SiC. As such, it is imperative that these defects are significantly reduced in order for SiC devices to become a viable entity in the electronics world. The NASA Glenn High Temperature Integrated Electronics & Sensors Team (HTIES) is working to identify and eliminate these defects in SiC by implementing improved epitaxial crystal growth procedures. HTIES takes two-inch SiC wafers and etches patterns, producing thousands of mesas into each wafer. Crystal growth is then carried out on top of these mesas in an effort to produce films of improved quality-resulting in electron devices that demonstrate superior performance-as well as fabrication processes that are cost-effective, reliable, and reproducible. In this work, further steps are taken to automate HTIES' SiC wafer inspection system. National Instruments LabVIEW image processing and pattern recognition routines are developed that are capable of quantifying and mapping defects on both the substrate and mesa surfaces, and of quantifying polymorphic changes in the grown materials. In addition, an optical emission microscopy (OEM) system is developed that will facilitate comprehensive study of recombination-enhanced dislocation motion (REDM).

KSC-20161214-JBS-MH-01-0001-L_1011_Pegasus_XL_CYGNSS-3139565_HEVC

NASA Image and Video Library

2016-12-14

The Orbital ATK L-1011 Stargazer aircraft is at the Skid Strip at Cape Canaveral Air Force Station in Florida. Attached beneath the Stargazer is the Orbital ATK Pegasus XL with NASA's Cyclone Global Navigation Satellite System (CYGNSS) on board. CYGNSS was processed and prepared for its mission at Vandenberg Air Force Base in California. CYGNSS is scheduled for its airborne launch aboard the Pegasus XL rocket from the Skid Strip on Dec. 15. CYGNSS will make frequent and accurate measurements of ocean surface winds throughout the life cycle of tropical storms and hurricanes. The data that CYGNSS provides will enable scientists to probe key air-sea interaction processes that take place near the core of storms, which are rapidly changing and play a critical role in the beginning and intensification of hurricanes.

Aluminum acceptor four particle bound exciton complex in 4H, 6H, and 3C SiC

NASA Technical Reports Server (NTRS)

Clemen, L. L.; Devaty, R. P.; Macmillan, M. F.; Yoganathan, M.; Choyke, W. J.; Larkin, D. J.; Powell, J. A.; Edmond, J. A.; Kong, H. S.

1993-01-01

Evidence is presented for a four particle acceptor complex in 3C, 6H, and 4H SiC, obtained in low-temperature photoluminescence and cathodoluminescence experiments. The new lines were observed in p-type films lightly doped with aluminum, of 6H, 4H, and 3C SiC grown on the silicon (0001) face of 6H SiC under special conditions. The lines increase in intensity as more aluminum is added during growth. The multiplicity of observed lines is consistent with symmetry-based models similar to those which have been proposed to describe 4A centers in p-type zincblende semiconductors.

Silicon carbide - Progress in crystal growth

NASA Technical Reports Server (NTRS)

Powell, J. Anthony

1987-01-01

Recent progress in the development of two processes for producing large-area high-quality single crystals of SiC is described: (1) a modified Lely process for the growth of the alpha polytypes (e.g., 6H SiC) initially developed by Tairov and Tsvetkov (1978, 1981) and Ziegler et al. (1983), and (2) a process for the epitaxial growth of the beta polytype on single-crystal silicon or other substrates. Growth of large-area cubic SiC on Si is described together with growth of defect-free beta-SiC films on alpha-6H SiC crystals and TiC lattice. Semiconducting qualities of silicon carbide crystals grown by various techniques are discussed.

Step Free Surface Heteroepitaxy of 3C-SiC Layers on Patterned 4H/6H-SiC Mesas and Cantilevers

NASA Technical Reports Server (NTRS)

Neudeck, P. G.; Powell, J. A.; Trunek, A. J.; Spry, D. J.

2004-01-01

The off-axis approach to SiC epitaxial growth has not prevented many substrate crystal defects from propagating into SiC epilayers, and does not permit the realization of SiC heteropolytype devices. This paper reviews recent advancements in SiC epitaxial growth that begin to overcome the above shortcomings for arrays of device-sized mesas patterned into on-axis 4H/6HSiC wafers. These on-axis mesa growth techniques have produced 4H/6H-SiC homoepilayers and 3C-SiC heteroepilayers with substantially lower dislocation densities. The results should enable improved homojunction and heterojunction silicon carbide prototype devices.

Study on Surface Roughness of Modified Silicon Carbide Mirrors polished by Magnetorheological Finishing

NASA Astrophysics Data System (ADS)

Du, Hang; Song, Ci; Li, Shengyi

2018-01-01

In order to obtain high precision and high surface quality silicon carbide mirrors, the silicon carbide mirror substrate is subjected to surface modification treatment. In this paper, the problem of Silicon Carbide (SiC) mirror surface roughness deterioration by MRF is studied. The reasons of surface flaws of “Comet tail” are analyzed. Influence principle of MRF polishing depth and the surface roughness of modified SiC mirrors is obtained by experiments. On this basis, the united process of modified SiC mirrors is proposed which is combined MRF with the small grinding head CCOS. The united process makes improvement in the surface accuracy and surface roughness of modified SiC mirrors.

Carbon Displacement-Induced Single Carbon Atomic Chain Formation and its Effects on Sliding of SiC Fibers in SiC/graphene/SiC Composite

DOE PAGES

Wallace, Joseph B.; Chen, Di; Shao, Lin

2015-11-03

Understanding radiation effects on the mechanical properties of SiC composites is important to their application in advanced reactor designs. By means of molecular dynamics simulations, we found that due to strong interface bonding between the graphene layers and SiC, the sliding friction of SiC fibers is largely determined by the frictional behavior between graphene layers. Upon sliding, carbon displacements between graphene layers can act as seed atoms to induce the formation of single carbon atomic chains (SCACs) by pulling carbon atoms from the neighboring graphene planes. The formation, growth, and breaking of SCACs determine the frictional response to irradiation.

Epitaxial growth of 6H silicon carbide in the temperature range 1320 C to 1390 C

NASA Technical Reports Server (NTRS)

Will, H. A.; Powell, J. A.

1974-01-01

High-quality epitaxial layers of 6H SiC have been grown on 6H SiC substrates with the grown direction perpendicular to the crystal c-axis. The growth was by chemical vapor deposition from methyltrichlorosilane (CH3SiCl3) in hydrogen at temperatures in the range of 1320 to 1390 C. Epitaxial layers up to 80 microns thick were grown at rates of 0.4 microns/min. Attempts at growth on the (0001) plane of 6H SiC substrates under similar conditions resulted in polycrystalline cubic SiC layers. Optical and X-ray diffraction techniques were used to characterize the grown layers.

Oxidation Resistance, Electrical and Thermal Conductivity, and Spectral Emittance of Fully Dense HfB2 and ZrB2 with SiC, TaSi2, and LaB6 Additives

DTIC Science & Technology

2012-01-26

Resistance , Electrical and Thermal Conductivity, and Spectral Emittance of Fully Dense HfB2 and ZrB2 "With SiC, TaSi2, and LaB6 Additives Sb. GRANT NUMBER... RESISTANCE , ELECTRICAL AND THERMAL CONDUCTIVITY, AND SPECTRAL EMITTANCE OF FULLY DENSE HfB2 AND ZrB2 WITH SiC, TaSi2, AND LaB6 ADDITIVES Air Force Office...thickened regions with dry 220 grit SiC sandpaper so that a low- resistance electrical connection could be achieved. A handheld multimeter was used to measure

Amorphous SiC as a structural layer in microbridge-based RF MEMS switches for use in software-defined radio

NASA Astrophysics Data System (ADS)

Parro, Rocco J.; Scardelletti, Maximilian C.; Varaljay, Nicholas C.; Zimmerman, Sloan; Zorman, Christian A.

2008-10-01

This paper reports an effort to develop amorphous silicon carbide (a-SiC) films for use in shunt capacitor RF MEMS microbridge-based switches. The films were deposited using methane and silane as the precursor gases. Switches were fabricated using 500 nm and 300 nm-thick a-SiC films to form the microbridges. Switches made from metallized 500 nm-thick SiC films exhibited favorable mechanical performance but poor RF performance. In contrast, switches made from metallized 300 nm-thick SiC films exhibited excellent RF performance but poor mechanical performance. Load-deflection testing of unmetallized and metallized bulk micromachined SiC membranes indicates that the metal layers have a small effect on the Young's modulus of the 500 nm and 300 nm-thick SiC MEMS. As for residual stress, the metal layers have a modest effect on the 500 nm-thick structures, but a significant affect on the residual stress in the 300 nm-thick structures.

Properties of thin SiC membrane for x-ray mask

NASA Astrophysics Data System (ADS)

Shoki, Tsutomu; Nagasawa, Hiroyuki; Kosuga, Hiroyuki; Yamaguchi, Yoichi; Annaka, Noromichi; Amemiya, Isao; Nagarekawa, Osamu

1993-06-01

We have investigated the effects of film thickness, anti-reflective (AR) coating and surface roughness on the optical transparency of silicon carbide (SiC) membrane. Peak transmittances monotonously increased as the thickness decreased. The transmittance at 633 nm for 1.05 micrometers thick SiC membrane adjusted by reactive ion etching was 70%, and increased up to 80% by an AR coating. SiC membrane with extremely smooth surface of 0.12 nm (Ra) has been obtained by polishing, and had peak transmittances of 69% and 80% at 633 nm for 2.0 micrometers and 1.0 micrometers in thickness, respectively. Poly-crystalline (beta) -SiC membrane in the suitable tensile stress range of 0.3 to 2.0 X 108 Pa and with high Young's modulus of 4.5 X 1011 Pa has been prepared by a hot wall type low pressure chemical vapor deposition, and been found to need to have thickness over 0.7 micrometers to maintain sufficient mechanical strength in processing.

Quantifying Appropriate De-rating of SiC MOSFETs Subject to Cosmic Rays

DOE Office of Scientific and Technical Information (OSTI.GOV)

Chatty, Kiran

Terrestrial Cosmic Radiation (TCR) is known to cause failures in high-voltage Si devices resulting in de-rating of the maximum reverse blocking voltage. In this work, a test setup was developed and unaccelerated TCR testing was performed on 1200V Si IGBTs, 1200V SiC MOSFETs and 1200V SiC Schottky diodes. Failures due to TCR were generated on 1200V Si IGBTs at reverse voltages from 900V to 1175V. Si IGBTs investigated in this work will need to be operated at a maximum voltage of 800V to achieve a Failure in Time (FIT) rate of 100. No failures were observed on 1200V SiC MOSFETsmore » and Schottky diodes after testing at 1200V for over 1.5 years demonstrating low FIT rates compared to Si IGBTs. 1200V SiC Schottky diodes were fabricated in this program and the packaged devices were used in the TCR testing.« less

Microstructure and Oxidation of (La,Sr)CrO3-Added Ti3SiC2 Composites.

PubMed

Lee, Dong Bok

2015-11-01

Composites of Ti3SiC2-(10, 20, 40)wt% La0.8Sr0.2CrO3 were synthesized by hot pressing powders of Ti3SiC2 and La0.8Sr0.2CrO3. These powders reacted to form stable TiC carbides and LaTiO3, Cr2Ti4O11, La2O3, and SrCrO4 oxides during hot pressing. The composites consisted primarily of a fine TiC-rich matrix phase and coarse Ti3SiC2 dispersoids. The addition of oxidation-immune La0.8Sr0.2CrO3 into Ti3SiC2 increased the oxidation rate because TiC formed during hot pressing. During oxidation of the composites at 800-1000 degrees C for 100 h in air, Ti diffused outward to form an outer rutile-TiO2 layer, and oxygen transported inward to form an inner oxide layer.

Super-hydrophobic surfaces of SiO₂-coated SiC nanowires: fabrication, mechanism and ultraviolet-durable super-hydrophobicity.

PubMed

Zhao, Jian; Li, Zhenjiang; Zhang, Meng; Meng, Alan

2015-04-15

The interest in highly water-repellent surfaces of SiO2-coated SiC nanowires has grown in recent years due to the desire for self-cleaning and anticorrosive surfaces. It is imperative that a simple chemical treatment with fluoroalkylsilane (FAS, CF3(CF2)7CH2CH2Si(OC2H5)3) in ethanol solution at room temperature resulted in super-hydrophobic surfaces of SiO2-coated SiC nanowires. The static water contact angle of SiO2-coated SiC nanowires surfaces was changed from 0° to 153° and the morphology, microstructure and crystal phase of the products were almost no transformation before and after super-hydrophobic treatment. Moreover, a mechanism was expounded reasonably, which could elucidate the reasons for their super-hydrophobic behavior. It is important that the super-hydrophobic surfaces of SiO2-coated SiC nanowires possessed ultraviolet-durable (UV-durable) super-hydrophobicity. Copyright © 2014 Elsevier Inc. All rights reserved.

A Manufacturing Cost and Supply Chain Analysis of SiC Power Electronics Applicable to Medium-Voltage Motor Drives

DOE Office of Scientific and Technical Information (OSTI.GOV)

Horowitz, Kelsey; Remo, Timothy; Reese, Samantha

Wide bandgap (WBG) semiconductor devices are increasingly being considered for use in certain power electronics applications, where they can improve efficiency, performance, footprint, and, potentially, total system cost compared to systems using traditional silicon (Si) devices. Silicon carbide (SiC) devices in particular -- which are currently more mature than other WBG devices -- are poised for growth in the coming years. Today, the manufacturing of SiC wafers is concentrated in the United States, and chip production is split roughly equally between the United States, Japan, and Europe. Established contract manufacturers located throughout Asia typically carry out manufacturing of WBG powermore » modules. We seek to understand how global manufacturing of SiC components may evolve over time by illustrating the regional cost drivers along the supply chain and providing an overview of other factors that influence where manufacturing is sited. We conduct this analysis for a particular case study where SiC devices are used in a medium-voltage motor drive.« less

DOE Office of Scientific and Technical Information (OSTI.GOV)

Nabeel Riza

In this program, Nuonics, Inc. has studied the fundamentals of a new Silicon Carbide (SiC) materials-based optical sensor technology suited for extreme environments of coal-fired engines in power production. The program explored how SiC could be used for sensing temperature, pressure, and potential gas species in a gas turbine environment. The program successfully demonstrated the optical designs, signal processing and experimental data for enabling both temperature and pressure sensing using SiC materials. The program via its sub-contractors also explored gas species sensing using SiC, in this case, no clear commercially deployable method was proven. Extensive temperature and pressure measurement datamore » using the proposed SiC sensors was acquired to 1000 deg-C and 40 atms, respectively. Importantly, a first time packaged all-SiC probe design was successfully operated in a Siemens industrial turbine rig facility with the probe surviving the harsh chemical, pressure, and temperature environment during 28 days of test operations. The probe also survived a 1600 deg-C thermal shock test using an industrial flame.« less

SiC lightweight telescopes for advanced space applications. II - Structures technology

NASA Technical Reports Server (NTRS)

Anapol, Michael I.; Hadfield, Peter; Tucker, Theodore

1992-01-01

A critical technology area for lightweight SiC-based telescope systems is the structural integrity and thermal stability over spaceborne environmental launch and thermal operating conditions. Note, it is highly desirable to have an inherently athermal design of both SiC mirrors and structure. SSG has developed an 8 inch diameter SiC telescope system for brassboard level optical and thermal testing. The brassboard telescope has demonstrated less than 0.2 waves P-V in the visible wavefront change over +50 C to -200 C temperature range. SSG has also fabricated a SiC truss structural assembly and successfully qualified this hardware at environmental levels greater than 3 times higher than normal Delta, Titan, and ARIES launch loads. SSG is currently developing two SiC telescopes; an 20 cm diameter off-axis 3 mirror re-imaging and a 60 cm aperture on-axis 3 mirror re-imager. Both hardware developments will be tested to flight level environmental, optical, and thermal specifications.

Microstructure and wear property of the Ti5Si3/TiC reinforced Co-based coatings fabricated by laser cladding on Ti-6Al-4V

NASA Astrophysics Data System (ADS)

Weng, Fei; Yu, Huijun; Liu, Jianli; Chen, Chuanzhong; Dai, Jingjie; Zhao, Zhihuan

2017-07-01

Ti5Si3/TiC reinforced Co-based composite coatings were fabricated on Ti-6Al-4V titanium alloy by laser cladding with Co42 and SiC mixture. Microstructure and wear property of the cladding coatings with different content of SiC were investigated. During the cladding process, the original SiC dissolved and reacted with Ti forming Ti5Si3 and TiC. The complex in situ formed phases were found beneficial to the improvement of the coating property. Results indicated that the microhardness of the composite coatings was enhanced to over 3 times the substrate. The wear resistance of the coatings also showed distinct improvement (18.4-57.4 times). More SiC gave rise to better wear resistance within certain limits. However, too much SiC (20 wt%) was not good for the further improvement of the wear property.

Optimization of KOH etching parameters for quantitative defect recognition in n- and p-type doped SiC

NASA Astrophysics Data System (ADS)

Sakwe, S. A.; Müller, R.; Wellmann, P. J.

2006-04-01

We have developed a KOH-based defect etching procedure for silicon carbide (SiC), which comprises in situ temperature measurement and control of melt composition. As benefit for the first time reproducible etching conditions were established (calibration plot, etching rate versus temperature and time); the etching procedure is time independent, i.e. no altering in KOH melt composition takes place, and absolute melt temperature values can be set. The paper describes this advanced KOH etching furnace, including the development of a new temperature sensor resistant to molten KOH. We present updated, absolute KOH etching parameters of n-type SiC and new absolute KOH etching parameters for low and highly p-type doped SiC, which are used for quantitative defect analysis. As best defect etching recipes we found T=530 °C/5 min (activation energy: 16.4 kcal/mol) and T=500 °C/5 min (activation energy: 13.5 kcal/mol) for n-type and p-type SiC, respectively.

Match graph generation for symbolic indirect correlation

NASA Astrophysics Data System (ADS)

Lopresti, Daniel; Nagy, George; Joshi, Ashutosh

2006-01-01

Symbolic indirect correlation (SIC) is a new approach for bringing lexical context into the recognition of unsegmented signals that represent words or phrases in printed or spoken form. One way of viewing the SIC problem is to find the correspondence, if one exists, between two bipartite graphs, one representing the matching of the two lexical strings and the other representing the matching of the two signal strings. While perfect matching cannot be expected with real-world signals and while some degree of mismatch is allowed for in the second stage of SIC, such errors, if they are too numerous, can present a serious impediment to a successful implementation of the concept. In this paper, we describe a framework for evaluating the effectiveness of SIC match graph generation and examine the relatively simple, controlled cases of synthetic images of text strings typeset, both normally and in highly condensed fashion. We quantify and categorize the errors that arise, as well as present a variety of techniques we have developed to visualize the intermediate results of the SIC process.

Advanced Capacitor with SiC for High Temperature Applications

NASA Astrophysics Data System (ADS)

Tsao, B. H.; Ramalingam, M. L.; Bhattacharya, R. S.; Carr, Sandra Fries

1994-07-01

An advanced capacitor using SiC as the dielectric material has been developed for high temperature, high power, and high density electronic components for aircraft and aerospace application. The conventional capacitor consists of a large number of metallized polysulfone films that are arranged in parallel and enclosed in a sealed metal case. However, problems with electrical failure, thermal failure, and dielectric flow were experienced by Air Force suppliers for the component and subsystem for lack of suitable properties of the dielectric material. The high breakdown electrical field, high thermal conductivity, and high temperature operational resistance of SiC compared to similar properties of the conventional ceramic and polymer capacitor would make it a better choice for a high temperature, and high power capacitor. The quality of the SiC film was evaluated. The electrical parameters, such as the capacitance, dissipation factor, equivalent series resistance, and dielectric withstand voltage, were evaluated. The prototypical capacitors are currently being fabricated using SiC film.

An allosteric conduit facilitates dynamic multisite substrate recognition by the SCFCdc4 ubiquitin ligase

NASA Astrophysics Data System (ADS)

Csizmok, Veronika; Orlicky, Stephen; Cheng, Jing; Song, Jianhui; Bah, Alaji; Delgoshaie, Neda; Lin, Hong; Mittag, Tanja; Sicheri, Frank; Chan, Hue Sun; Tyers, Mike; Forman-Kay, Julie D.

2017-01-01

The ubiquitin ligase SCFCdc4 mediates phosphorylation-dependent elimination of numerous substrates by binding one or more Cdc4 phosphodegrons (CPDs). Methyl-based NMR analysis of the Cdc4 WD40 domain demonstrates that Cyclin E, Sic1 and Ash1 degrons have variable effects on the primary Cdc4WD40 binding pocket. Unexpectedly, a Sic1-derived multi-CPD substrate (pSic1) perturbs methyls around a previously documented allosteric binding site for the chemical inhibitor SCF-I2. NMR cross-saturation experiments confirm direct contact between pSic1 and the allosteric pocket. Phosphopeptide affinity measurements reveal negative allosteric communication between the primary CPD and allosteric pockets. Mathematical modelling indicates that the allosteric pocket may enhance ultrasensitivity by tethering pSic1 to Cdc4. These results suggest negative allosteric interaction between two distinct binding pockets on the Cdc4WD40 domain may facilitate dynamic exchange of multiple CPD sites to confer ultrasensitive dependence on substrate phosphorylation.

Nanoparticle-density-dependent field emission of surface-decorated SiC nanowires

DOE Office of Scientific and Technical Information (OSTI.GOV)

Dong, Qizheng; School of Materials and Chemical Engineering, Ningbo University of Technology, Ningbo City 315016; State Key Lab of New Fine Ceramics and Fine Processing, Tsinghua University, Beijing City 100084

2016-08-22

Increasing the electron emission site density of nanostructured emitters with limited field screening effects is one of the key issues for improving the field emission (FE) properties. In this work, we reported the Au-nanoparticles-density-dependent field emission behaviors of surface-decorated SiC nanowires. The Au nanoparticles (AuNPs) decorated around the surface of the SiC nanowires were achieved via an ion sputtering technique, by which the densities of the isolated AuNPs could be adjusted by controlling the fixed sputtering times. The measured FE characteristics demonstrated that the turn-on fields of the SiC nanowires were tuned to be of 2.06, 1.14, and 3.35 V/μm withmore » the increase of the decorated AuNPs densities, suggesting that a suitable decorated AuNPs density could render the SiC nanowires with totally excellent FE performances by increasing the emission sites and limiting the field screening effects.« less

Electroplating chromium on CVD SiC and SiCf-SiC advanced cladding via PyC compatibility coating

NASA Astrophysics Data System (ADS)

Ang, Caen; Kemery, Craig; Katoh, Yutai

2018-05-01

Electroplating Cr on SiC using a pyrolytic carbon (PyC) bond coat is demonstrated as an innovative concept for coating of advanced fuel cladding. The quantification of coating stress, SEM morphology, XRD phase analysis, and debonding test of the coating on CVD SiC and SiCf-SiC is shown. The residual tensile stress (by ASTM B975) of electroplated Cr is > 1 GPa prior to stress relaxation by microcracking. The stress can remove the PyC/Cr layer from SiC. Surface etching of ∼20 μm and roughening to Ra > 2 μm (by SEM observation) was necessary for successful adhesion. The debonding strength (by ASTM D4541) of the coating on SiC slightly improved from 3.6 ± 1.4 MPa to 5.9 ± 0.8 MPa after surface etching or machining. However, this improvement is limited due to the absence of an interphase, and integrated CVI processing may be required for further advancement.

Injection molding of silicon carbide capable of being sintered without pressure

NASA Technical Reports Server (NTRS)

Muller-Zell, A.; Schwarzmeier, R.

1984-01-01

The most suitable SiC mass for injection molding of SiC articles (for subsequent pressureless sintering) consisted of beta SiC 84, a wax mixture 8, and polyethylene or polystyrene 8 parts. The most effective method for adding the binders was by dissolving them in a solvent and subsequent evaporation. The sequence of component addition was significant, and all parameters were optimized together rather than individually.

Ultra-Low-Cost Room Temperature SiC Thin Films

NASA Technical Reports Server (NTRS)

Faur, Maria

1997-01-01

The research group at CSU has conducted theoretical and experimental research on 'Ultra-Low-Cost Room Temperature SiC Thin Films. The effectiveness of a ultra-low-cost room temperature thin film SiC growth technique on Silicon and Germanium substrates and structures with applications to space solar sells, ThermoPhotoVoltaic (TPV) cells and microelectronic and optoelectronic devices was investigated and the main result of this effort are summarized.

Minimizing Actuator-Induced Residual Error in Active Space Telescope Primary Mirrors

DTIC Science & Technology

2010-09-01

actuator geometry, and rib-to-facesheet intersection geometry are exploited to achieve improved performance in silicon carbide ( SiC ) mirrors . A...are exploited to achieve improved performance in silicon carbide ( SiC ) mirrors . A parametric finite element model is used to explore the trade space...MOST) finite element model. The move to lightweight actively-controlled silicon carbide ( SiC ) mirrors is traced back to previous generations of space

Effects of Temperature and Steam Environment on Fatigue Behavior of Three SIC/SIC Ceramic Matrix Composites

DTIC Science & Technology

2008-09-01

Infiltration (CVI), Chemical Vapor Deposition (CVD) and polymer impregnation/ pyrolysis (PIP) [5:20, 32]. The SiC fibers currently... composite was infiltrated with a mixture of polymer , filler particles and solvent. During pyrolysis under nitrogen at temperatures > 1000 °C, the...using polymer infiltration and pyrolysis (PIP) method. Polymer infiltration and pyrolysis processing method allows near-net-shape molding and

Preparation of Sic/AIN Solid Solutions Using Organometallic Precursors

DTIC Science & Technology

1989-02-15

pyrolysis of organoaluminum and organosilicon compounds was investigated as a potential source of SiC /AUI solid solutions. Using two different co... pyrolysis methods, homogeneous mixtures of organoaluminum amides and both a vinylic polysilane and a poly- carbosilane were convertec to a preceramic ...solid that transformed to crystalline SiC /AiN solid solutions at 򒸀 C. Moreover, the liquid, polymeric , form of these precursor mixtures provides a

Low CTE glass, SiC & Beryllium for lightweight mirror substrates

NASA Astrophysics Data System (ADS)

Geyl, Roland; Cayrel, Marc

2005-10-01

This paper is intended to analyze the relative merits of low CTE glass, SiC and Beryllium as candidates for lightweight mirror substrates in connection with real practical experience and example or three major projects using these three materials and running presently at SAGEM-REOSC. Beryllium and SiC have nice thermal and mechanical properties but machined glass ceramic can still well compete technically or economically in some cases.

Long-Term Reliability of a Hard-Switched Boost Power Processing Unit Utilizing SiC Power MOSFETs

NASA Technical Reports Server (NTRS)

Ikpe, Stanley A.; Lauenstein, Jean-Marie; Carr, Gregory A.; Hunter, Don; Ludwig, Lawrence L.; Wood, William; Iannello, Christopher J.; Del Castillo, Linda Y.; Fitzpatrick, Fred D.; Mojarradi, Mohammad M.;

Atomistic insights on the nanoscale single grain scratching mechanism of silicon carbide ceramic based on molecular dynamics simulation

NASA Astrophysics Data System (ADS)

Liu, Yao; Li, Beizhi; Kong, Lingfei

2018-03-01

The precision and crack-free surface of brittle silicon carbide (SiC) ceramic was achieved in the nanoscale ductile grinding. However, the nanoscale scratching mechanism and the root causes of SiC ductile response, especially in the atomistic aspects, have not been fully understood yet. In this study, the SiC atomistic scale scratching mechanism was investigated by single diamond grain scratching simulation based on molecular dynamics. The results indicated that the ductile scratching process of SiC could be achieved in the nanoscale depth of cut through the phase transition to an amorphous structure with few hexagonal diamond structure. Furthermore, the silicon atoms in SiC could penetrate into diamond grain which may cause wear of diamond grain. It was further found out that the chip material in the front of grain flowed along the grain side surface to form the groove protrusion as the scratching speed increases. The higher scratching speed promoted more atoms to transfer into the amorphous structure and reduced the hexagonal diamond and dislocation atoms number, which resulted in higher temperature, smaller scratching force, smaller normal stress, and thinner subsurface damage thickness, due to larger speed impaction causing more bonds broken which makes the SiC more ductile.

Very low Schottky barrier height at carbon nanotube and silicon carbide interface

DOE Office of Scientific and Technical Information (OSTI.GOV)

Inaba, Masafumi, E-mail: inaba-ma@ruri.waseda.jp; Suzuki, Kazuma; Shibuya, Megumi

2015-03-23

Electrical contacts to silicon carbide with low contact resistivity and high current durability are crucial for future SiC power devices, especially miniaturized vertical-type devices. A carbon nanotube (CNT) forest formed by silicon carbide (SiC) decomposition is a densely packed forest, and is ideal for use as a heat-dissipative ohmic contact in SiC power transistors. The contact resistivity and Schottky barrier height in a Ti/CNT/SiC system with various SiC dopant concentrations were evaluated in this study. Contact resistivity was evaluated in relation to contact area. The Schottky barrier height was calculated from the contact resistivity. As a result, the Ti/CNT/SiC contactmore » resistivity at a dopant concentration of 3 × 10{sup 18 }cm{sup −3} was estimated to be ∼1.3 × 10{sup −4} Ω cm{sup 2} and the Schottky barrier height of the CNT/SiC contact was in the range of 0.40–0.45 eV. The resistivity is relatively low for SiC contacts, showing that CNTs have the potential to be a good ohmic contact material for SiC power electronic devices.« less

Effect of Steam Activation on Development of Light Weight Biomorphic Porous SiC from Pine Wood Precursor

NASA Astrophysics Data System (ADS)

Manocha, Satish M.; Patel, Hemang; Manocha, L. M.

2013-02-01

Biomorphic SiC materials with tailor-made microstructure and properties similar to ceramic materials manufactured by conventional method are a new class of materials derived from natural biopolymeric cellulose templates (wood). Porous silicon carbide (SiC) ceramics with wood-like microstructure have been prepared by carbothermal reduction of charcoal/silica composites at 1300-1600 °C in inert Ar atmosphere. The C/SiO2 composites were fabricated by infiltrating silica sol into porous activated biocarbon template. Silica in the charcoal/silica composite, preferentially in the cellular pores, was found to get transformed in forms of fibers and rods due to shrinkage during drying. The changes in the morphology of resulting porous SiC ceramics after heat treatment to 1600 °C, as well as the conversion mechanism of wood to activated carbon and then to porous SiC ceramic have been investigated using scanning electron microscope, x-ray diffraction, thermogravimetric analysis, and differential scanning calorimetry. Activation of carbon prior to silica infiltration has been found to enhance conversion of charcoal to SiC. The pore structure is found to be uniform in these materials than in those made from as-such charcoal/silica composites. This provides a low-cost and eco-friendly route to advanced ceramic materials, with near-net shape potential.

High-Temperature Mechanical Properties of the P/M Extruded Mg -SiCp Composites

NASA Astrophysics Data System (ADS)

Labib, F.; Mahmudi, R.; Ghasemi, H. M.

2018-03-01

In the present study, pure magnesium reinforced with 0, 5, 10 and 15 vol.% SiC particulates was successfully prepared by powder metallurgy technique before being hot extruded. The average 14 μm grain size of the composite specimens remained almost unchanged after addition of SiC particles, while their dimensional stability was improved because of the reduction in the coefficient of thermal expansion (CTE) from 28.6 × 10-6 K-1 in pure Mg to 27.3, 25.3 and 23.4 × 10-6 K-1 in the Mg-5% SiC, Mg-10% SiC and Mg-15% SiC composites, respectively. Mechanical properties of the specimens were investigated in the temperature range of 298-498 K, implementing shear punch testing and hot hardness techniques. Depending on the test temperature, addition of SiC particles to the pure Mg matrix increased shear yield stress and ultimate shear strength of the materials by 5-25 and 6-23 MPa, respectively. The shear strength improvement was mainly attributed to the CTE mismatch strengthening mechanism (9.5-25.5 MPa), and to a lesser extent (1-4.5 MPa), to the load transfer mechanism. Finally, using the modified Clyne model, the contribution of different strengthening mechanisms to the total shear strength improvement in the composites was evaluated.

Anodization Mechanism on SiC Nanoparticle Reinforced Al Matrix Composites Produced by Power Metallurgy.

PubMed

Ferreira, Sonia C; Conde, Ana; Arenas, María A; Rocha, Luis A; Velhinho, Alexandre

2014-12-19

Specimens of aluminum-based composites reinforced by silicon carbide nanoparticles (Al/SiC np ) produced by powder metallurgy (PM) were anodized under voltage control in tartaric-sulfuric acid (TSA). In this work, the influence of the amount of SiC np on the film growth during anodizing was investigated. The current density versus time response and the morphology of the porous alumina film formed at the composite surface are compared to those concerning a commercial aluminum alloy (AA1050) anodized under the same conditions. The processing method of the aluminum alloys influences the efficiency of the anodizing process, leading to a lower thicknesses for the unreinforced Al-PM alloy regarding the AA1050. The current density versus time response is strongly dependent on the amount of SiC np . The current peaks and the steady-state current density recorded at each voltage step increases with the SiC np volume fraction due to the oxidation of the SiC np . The formation mechanism of the anodic film on Al/SiC np composites is different from that occurring in AA1050, partly due the heterogeneous distribution of the reinforcement particles in the metallic matrix, but also to the entrapment of SiC np in the anodic film.

Synthesis, crystal structure, and magnetic properties of novel intermetallic compounds R2Co2SiC (R = Pr, Nd).

PubMed

Zhou, Sixuan; Mishra, Trinath; Wang, Man; Shatruk, Michael; Cao, Huibo; Latturner, Susan E

2014-06-16

The intermetallic compounds R2Co2SiC (R = Pr, Nd) were prepared from the reaction of silicon and carbon in either Pr/Co or Nd/Co eutectic flux. These phases crystallize with a new stuffed variant of the W2CoB2 structure type in orthorhombic space group Immm with unit cell parameters a = 3.978(4) Å, b = 6.094(5) Å, c = 8.903(8) Å (Z = 2; R1 = 0.0302) for Nd2Co2SiC. Silicon, cobalt, and carbon atoms form two-dimensional flat sheets, which are separated by puckered layers of rare-earth cations. Magnetic susceptibility measurements indicate that the rare earth cations in both analogues order ferromagnetically at low temperature (TC ≈ 12 K for Nd2Co2SiC and TC ≈ 20 K for Pr2Co2SiC). Single-crystal neutron diffraction data for Nd2Co2SiC indicate that Nd moments initially align ferromagnetically along the c axis around ∼12 K, but below 11 K, they tilt slightly away from the c axis, in the ac plane. Electronic structure calculations confirm the lack of spin polarization for Co 3d moments.

Thermomechanical Performance of Si-Ti-C-O and Sintered SiC Fiber-Bonded Ceramics at High Temperatures

DOE Office of Scientific and Technical Information (OSTI.GOV)

Matsunaga, Tadashi; Lin, Hua-Tay; Singh, Mrityunjay

2011-01-01

The stress-temperature-lifetime response of Si-Ti-C-O fiber-bonded ceramic (Tyrannohex ) and sintered SiC fiber-bonded ceramic (SA-Tyrannohex ) materials were investigated in air from 500 to 1150 C and 500 to 1400 C, respectively. The apparent threshold stress of Si-Ti-C-O fiber-bonded ceramic was about 175 MPa in the 500-1150 C temperature range. When the applied stress of the sintered SiC fiber-bonded ceramic was below an apparent threshold stress (e.g., ~225MPa) for tests conducted 1150 C, no failures were observed for lifetimes up to 1000h. In the case of sintered SiC fiber-bonded ceramic, at the temperature of 1300 C, the apparent threshold stressmore » decreased to 175 MPa. The decrease in strength seemed to be caused by grain growth which was confirmed from the SEM fractography. Both fiber-bonded ceramics exhibited much higher durability than a commercial SiC/SiC composite at temperatures above 500 C. In addition, results suggested that the sintered SiC fiber-bonded ceramic (SA-Tyrannohex) is more stable than a Hi-Nicalon/MI SiC composite with BN/SiC fiber coating at temperatures above 1300 C.« less

High Temperature Electronics for Intelligent Harsh Environment Sensors

NASA Technical Reports Server (NTRS)

Evans, Laura J.

2008-01-01

The development of intelligent instrumentation systems is of high interest in both public and private sectors. In order to obtain this ideal in extreme environments (i.e., high temperature, extreme vibration, harsh chemical media, and high radiation), both sensors and electronics must be developed concurrently in order that the entire system will survive for extended periods of time. The semiconductor silicon carbide (SiC) has been studied for electronic and sensing applications in extreme environment that is beyond the capability of conventional semiconductors such as silicon. The advantages of SiC over conventional materials include its near inert chemistry, superior thermomechanical properties in harsh environments, and electronic properties that include high breakdown voltage and wide bandgap. An overview of SiC sensors and electronics work ongoing at NASA Glenn Research Center (NASA GRC) will be presented. The main focus will be two technologies currently being investigated: 1) harsh environment SiC pressure transducers and 2) high temperature SiC electronics. Work highlighted will include the design, fabrication, and application of SiC sensors and electronics, with recent advancements in state-of-the-art discussed as well. These combined technologies are studied for the goal of developing advanced capabilities for measurement and control of aeropropulsion systems, as well as enhancing tools for exploration systems.

Neutron-irradiation creep of silicon carbide materials beyond the initial transient

DOE PAGES

Katoh, Yutai; Ozawa, Kazumi; Shimoda, Kazuya; ...

2016-06-04

Irradiation creep beyond the transient regime was investigated for various silicon carbide (SiC) materials. Here, the materials examined included polycrystalline or monocrystalline high-purity SiC, nanopowder sintered SiC, highly crystalline and near-stoichiometric SiC fibers (including Hi-Nicalon Type S, Tyranno SA3, isotopically-controlled Sylramic and Sylramic-iBN fibers), and a Tyranno SA3 fiber–reinforced SiC matrix composite fabricated through a nano-infiltration transient eutectic phase process. Neutron irradiation experiments for bend stress relaxation tests were conducted at irradiation temperatures ranging from 430 to 1180 °C up to 30 dpa with initial bend stresses of up to ~1 GPa for the fibers and ~300 MPa for themore » other materials. Initial bend stress in the specimens continued to decrease from 1 to 30 dpa. Analysis revealed that (1) the stress exponent of irradiation creep above 1 dpa is approximately unity, (2) the stress normalized creep rate is ~1 × 10 –7 [dpa –1 MPa –1] at 430–750 °C for the range of 1–30 dpa for most polycrystalline SiC materials, and (3) the effects on irradiation creep of initial microstructures—such as grain boundary, crystal orientation, and secondary phases—increase with increasing irradiation temperature.« less

Self-consistent self-interaction corrected density functional theory calculations for atoms using Fermi-Löwdin orbitals: Optimized Fermi-orbital descriptors for Li-Kr

NASA Astrophysics Data System (ADS)

Kao, Der-you; Withanage, Kushantha; Hahn, Torsten; Batool, Javaria; Kortus, Jens; Jackson, Koblar

2017-10-01

In the Fermi-Löwdin orbital method for implementing self-interaction corrections (FLO-SIC) in density functional theory (DFT), the local orbitals used to make the corrections are generated in a unitary-invariant scheme via the choice of the Fermi orbital descriptors (FODs). These are M positions in 3-d space (for an M-electron system) that can be loosely thought of as classical electron positions. The orbitals that minimize the DFT energy including the SIC are obtained by finding optimal positions for the FODs. In this paper, we present optimized FODs for the atoms from Li-Kr obtained using an unbiased search method and self-consistent FLO-SIC calculations. The FOD arrangements display a clear shell structure that reflects the principal quantum numbers of the orbitals. We describe trends in the FOD arrangements as a function of atomic number. FLO-SIC total energies for the atoms are presented and are shown to be in close agreement with the results of previous SIC calculations that imposed explicit constraints to determine the optimal local orbitals, suggesting that FLO-SIC yields the same solutions for atoms as these computationally demanding earlier methods, without invoking the constraints.

CaO-Al2O3 glass-ceramic as a joining material for SiC based components: A microstructural study of the effect of Si-ion irradiation

NASA Astrophysics Data System (ADS)

Casalegno, Valentina; Kondo, Sosuke; Hinoki, Tatsuya; Salvo, Milena; Czyrska-Filemonowicz, Aleksandra; Moskalewicz, Tomasz; Katoh, Yutai; Ferraris, Monica

2018-04-01

The aim of this work was to investigate and discuss the microstructure and interface reaction of a calcia-alumina based glass-ceramic (CA) with SiC. CA has been used for several years as a glass-ceramic for pressure-less joining of SiC based components. In the present work, the crystalline phases in the CA glass-ceramic and at the CA/SiC interface were investigated and the absence of any detectable amorphous phase was assessed. In order to provide a better understanding of the effect of irradiation on the joining material and on the joints, Si ion irradiation was performed both on bulk CA and CA joined SiC. CA glass-ceramic and CA joined SiC were both irradiated with 5.1 MeV Si2+ ions to 3.3 × 1020 ions/m2 at temperatures of 400 and 800 °C at DuET facility, Kyoto University. This corresponds to a damage level of 5 dpa for SiC averaged over the damage range. This paper presents the results of a microstructural analysis of the irradiated samples as well as an evaluation of the dimensional stability of the CA glass-ceramic and its irradiation temperature and/or damage dependence.

Modulating the Surface State of SiC to Control Carrier Transport in Graphene/SiC.

PubMed

Jia, Yuping; Sun, Xiaojuan; Shi, Zhiming; Jiang, Ke; Liu, Henan; Ben, Jianwei; Li, Dabing

2018-05-28

Silicon carbide (SiC) with epitaxial graphene (EG/SiC) shows a great potential in the applications of electronic and photoelectric devices. The performance of devices is primarily dependent on the interfacial heterojunction between graphene and SiC. Here, the band structure of the EG/SiC heterojunction is experimentally investigated by Kelvin probe force microscopy. The dependence of the barrier height at the EG/SiC heterojunction to the initial surface state of SiC is revealed. Both the barrier height and band bending tendency of the heterojunction can be modulated by controlling the surface state of SiC, leading to the tuned carrier transport behavior at the EG/SiC interface. The barrier height at the EG/SiC(000-1) interface is almost ten times that of the EG/SiC(0001) interface. As a result, the amount of carrier transport at the EG/SiC(000-1) interface is about ten times that of the EG/SiC(0001) interface. These results offer insights into the carrier transport behavior at the EG/SiC heterojunction by controlling the initial surface state of SiC, and this strategy can be extended in all devices with graphene as the top layer. © 2018 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Oxidation of SiC

NASA Astrophysics Data System (ADS)

Cooper, James A.

1997-03-01

SiC is a wide band gap hexagonal anisotropic semiconductor which is attractive for use in high voltage, high temperature, or high power applications. SiC is also the only compound semiconductor that can be thermally oxidized to form SiO_2, making it possible to construct many conventional MOS devices in this material. The electrical quality of the SiO_2/SiC interface is far from ideal, however, and considerable research is presently directed to understanding and improving this interface. Electrical characterization of the SiC MOS interface is complicated by the wide band gap, since most interface states are energetically too far removed from the conduction or valence bands to respond to electrical stimulation at room temperature. Moreover, very little information is yet available on the properties of the MOS interface on the 4H polytype of SiC (preferred because of it's higher bulk electron mobility) or on interfaces on crystalline surfaces perpendicular to the basal plane (where an equal number of Si and C atoms are present). Finally, electron mobilities in inversion layers on 4H-SiC reported to date are anomolously low, especially in consideration of the relatively high bulk mobilities in this polytype. In this talk we will discuss MOS characterization techniques for wide band gap semiconductors and review the current understanding of the physics of the MOS interface on thermally oxidized SiC.

Advantages and Limits of 4H-SIC Detectors for High- and Low-Flux Radiations

NASA Astrophysics Data System (ADS)

Sciuto, A.; Torrisi, L.; Cannavò, A.; Mazzillo, M.; Calcagno, L.

2017-11-01

Silicon carbide (SiC) detectors based on Schottky diodes were used to monitor low and high fluxes of photons and ions. An appropriate choice of the epilayer thickness and geometry of the surface Schottky contact allows the tailoring and optimizing the detector efficiency. SiC detectors with a continuous front electrode were employed to monitor alpha particles in a low-flux regime emitted by a radioactive source with high energy (>5.0 MeV) or generated in an ion implanter with sub-MeV energy. An energy resolution value of 0.5% was measured in the high energy range, while, at energy below 1.0 MeV, the resolution becomes 10%; these values are close to those measured with a traditional silicon detector. The same SiC devices were used in a high-flux regime to monitor high-energy ions, x-rays and electrons of the plasma generated by a high-intensity (1016 W/cm2) pulsed laser. Furthermore, SiC devices with an interdigit Schottky front electrode were proposed and studied to overcome the limits of the such SiC detectors in the detection of low-energy (˜1.0 keV) ions and photons of the plasmas generated by a low-intensity (1010 W/cm2) pulsed laser. SiC detectors are expected to be a powerful tool for the monitoring of radioactive sources and ion beams produced by accelerators, for a complete characterization of radiations emitted from laser-generated plasmas at high and low temperatures, and for dosimetry in a radioprotection field.

Silicon Carbide Technology

NASA Technical Reports Server (NTRS)

Neudeck, Philip G.

2006-01-01

Silicon carbide based semiconductor electronic devices and circuits are presently being developed for use in high-temperature, high-power, and high-radiation conditions under which conventional semiconductors cannot adequately perform. Silicon carbide's ability to function under such extreme conditions is expected to enable significant improvements to a far-ranging variety of applications and systems. These range from greatly improved high-voltage switching for energy savings in public electric power distribution and electric motor drives to more powerful microwave electronics for radar and communications to sensors and controls for cleaner-burning more fuel-efficient jet aircraft and automobile engines. In the particular area of power devices, theoretical appraisals have indicated that SiC power MOSFET's and diode rectifiers would operate over higher voltage and temperature ranges, have superior switching characteristics, and yet have die sizes nearly 20 times smaller than correspondingly rated silicon-based devices [8]. However, these tremendous theoretical advantages have yet to be widely realized in commercially available SiC devices, primarily owing to the fact that SiC's relatively immature crystal growth and device fabrication technologies are not yet sufficiently developed to the degree required for reliable incorporation into most electronic systems. This chapter briefly surveys the SiC semiconductor electronics technology. In particular, the differences (both good and bad) between SiC electronics technology and the well-known silicon VLSI technology are highlighted. Projected performance benefits of SiC electronics are highlighted for several large-scale applications. Key crystal growth and device-fabrication issues that presently limit the performance and capability of high-temperature and high-power SiC electronics are identified.

Fundamental Studies of the Silicon Carbide MOS Interface

NASA Astrophysics Data System (ADS)

Swandono, Steven

Climate change has placed a spotlight on renewable energy. Power electronics are essential to minimize energy loss when electricity is converted to a form used on the power grid. With silicon devices now approaching performance limits, SiC MOSFET can deliver power electronics to greater heights. However, the power capability of SiC MOSFETs is constrained by having low interface carrier mobility. It was coincidentally discovered that MOSFETs with oxide grown in alumina tubes have significantly higher mobility. We believe that the large surface potential fluctuations in SiC MOS interface results in percolation transport, and sodium ions from the alumina tubes reduces these percolative effects. Fabrication of SiC MOSFETs with different oxide thickness can vary the surface potential fluctuations and is used to verify the impact of percolation transport on SiC interface mobility. Characterization techniques on SiC devices are adopted from their silicon counterparts. Many characterization techniques are not tailored to the specification of SiC materials and hence, result in conflicting results during comparison of data among different research groups. The later chapters discussed the inaccuracies in the MOS AC conductance technique caused by the non-linear surface potential - gate voltage relationship and an energy-dependent interface state density. Using an exact model, we quantify errors in the extraction of interface state density, capture cross section, and position of the surface Fermi level when analyzed using the standard Nicollian-Goetzberger equations. We show that the exponential dependence of capture cross section on energy near the band edges is an artifact of the data analysis.

Storage/Turnover Rate of Inorganic Carbon and Its Dissolvable Part in the Profile of Saline/Alkaline Soils

PubMed Central

Wang, Yugang; Wang, Zhongyuan; Li, Yan

2013-01-01

Soil inorganic carbon is the most common form of carbon in arid and semiarid regions, and has a very long turnover time. However, little is known about dissolved inorganic carbon storage and its turnover time in these soils. With 81 soil samples taken from 6 profiles in the southern Gurbantongute Desert, China, we investigated the soil inorganic carbon (SIC) and the soil dissolved inorganic carbon (SDIC) in whole profiles of saline and alkaline soils by analyzing their contents and ages with radiocarbon dating. The results showed that there is considerable SDIC content in SIC, and the variations of SDIC and SIC contents in the saline soil profile were much larger than that in the alkaline profile. SDIC storage accounted for more than 20% of SIC storage, indicating that more than 1/5 of the inorganic carbon in both saline and alkaline soil is not in non-leachable forms. Deep layer soil contains considerable inorganic carbon, with more than 80% of the soil carbon stored below 1 m, whether for SDIC or SIC. More importantly, SDIC ages were much younger than SIC in both saline soil and alkaline soil. The input rate of SDIC and SIC ranged from 7.58 to 29.54 g C m-2 yr-1 and 1.34 to 5.33 g C m-2 yr-1 respectively for saline soil, and from 1.43 to 4.9 g C m-2 yr-1 and 0.79 to 1.27 g C m-2 yr-1respectively for alkaline soil. The comparison of SDIC and SIC residence time showed that using soil inorganic carbon to estimate soil carbon turnover would obscure an important fraction that contributes to the modern carbon cycle: namely the shorter residence and higher input rate of SDIC. This is especially true for SDIC in deep layers of the soil profile. PMID:24312399

SiC JFET Transistor Circuit Model for Extreme Temperature Range

NASA Technical Reports Server (NTRS)

Neudeck, Philip G.

2008-01-01

A technique for simulating extreme-temperature operation of integrated circuits that incorporate silicon carbide (SiC) junction field-effect transistors (JFETs) has been developed. The technique involves modification of NGSPICE, which is an open-source version of the popular Simulation Program with Integrated Circuit Emphasis (SPICE) general-purpose analog-integrated-circuit-simulating software. NGSPICE in its unmodified form is used for simulating and designing circuits made from silicon-based transistors that operate at or near room temperature. Two rapid modifications of NGSPICE source code enable SiC JFETs to be simulated to 500 C using the well-known Level 1 model for silicon metal oxide semiconductor field-effect transistors (MOSFETs). First, the default value of the MOSFET surface potential must be changed. In the unmodified source code, this parameter has a value of 0.6, which corresponds to slightly more than half the bandgap of silicon. In NGSPICE modified to simulate SiC JFETs, this parameter is changed to a value of 1.6, corresponding to slightly more than half the bandgap of SiC. The second modification consists of changing the temperature dependence of MOSFET transconductance and saturation parameters. The unmodified NGSPICE source code implements a T(sup -1.5) temperature dependence for these parameters. In order to mimic the temperature behavior of experimental SiC JFETs, a T(sup -1.3) temperature dependence must be implemented in the NGSPICE source code. Following these two simple modifications, the Level 1 MOSFET model of the NGSPICE circuit simulation program reasonably approximates the measured high-temperature behavior of experimental SiC JFETs properly operated with zero or reverse bias applied to the gate terminal. Modification of additional silicon parameters in the NGSPICE source code was not necessary to model experimental SiC JFET current-voltage performance across the entire temperature range from 25 to 500 C.

Statistical Analysis of SSMIS Sea Ice Concentration Threshold at the Arctic Sea Ice Edge during Summer Based on MODIS and Ship-Based Observational Data.

PubMed

Ji, Qing; Li, Fei; Pang, Xiaoping; Luo, Cong

2018-04-05

The threshold of sea ice concentration (SIC) is the basis for accurately calculating sea ice extent based on passive microwave (PM) remote sensing data. However, the PM SIC threshold at the sea ice edge used in previous studies and released sea ice products has not always been consistent. To explore the representable value of the PM SIC threshold corresponding on average to the position of the Arctic sea ice edge during summer in recent years, we extracted sea ice edge boundaries from the Moderate-resolution Imaging Spectroradiometer (MODIS) sea ice product (MOD29 with a spatial resolution of 1 km), MODIS images (250 m), and sea ice ship-based observation points (1 km) during the fifth (CHINARE-2012) and sixth (CHINARE-2014) Chinese National Arctic Research Expeditions, and made an overlay and comparison analysis with PM SIC derived from Special Sensor Microwave Imager Sounder (SSMIS, with a spatial resolution of 25 km) in the summer of 2012 and 2014. Results showed that the average SSMIS SIC threshold at the Arctic sea ice edge based on ice-water boundary lines extracted from MOD29 was 33%, which was higher than that of the commonly used 15% discriminant threshold. The average SIC threshold at sea ice edge based on ice-water boundary lines extracted by visual interpretation from four scenes of the MODIS image was 35% when compared to the average value of 36% from the MOD29 extracted ice edge pixels for the same days. The average SIC of 31% at the sea ice edge points extracted from ship-based observations also confirmed that choosing around 30% as the SIC threshold during summer is recommended for sea ice extent calculations based on SSMIS PM data. These results can provide a reference for further studying the variation of sea ice under the rapidly changing Arctic.

A Comparative Study of Clear Corneal Phacoemulsification with Rigid IOL Versus SICS; the Preferred Surgical Technique in Low Socio-economic group Patients of Rural Areas.

PubMed

Devendra, Jaya; Agarwal, Smita; Singh, Pankaj Kumar

2014-11-01

Low socio-economic group patients from rural areas often opt for free cataract surgeries offered by charitable organisations. SICS continues to be a time tested technique for cataract removal in such patients. In recent times, camp patients are sometimes treated by clear corneal phacoemulsification with implantation of a rigid IOL, which being more cost effective is often provided for camp patients. This study was undertaken to find out which surgical technique yielded better outcomes and was more suited for high volume camp surgery. To find the better surgical option- phacoemulsification with rigid IOL or SICS, in poor patients from rural areas. A prospective randomised controlled trial of cataract patients operated by two different techniques. One hundred and twelve eyes were selected and were randomly allocated into two groups of 56 eyes each. At completion of the study, data was analysed for 52 eyes operated by clear corneal phacoemulsification and implantation of a rigid IOL, and 56 eyes operated by SICS. Unpaired t-test was used to calculate the p- value. The results were evaluated on the following criteria. The mean post-operative astigmatism at the end of four weeks - was significantly higher in phacoemulsification group as compared to SICS group The BCVA (best corrected visual acuity) at the end of four weeks - was comparable in both groups. Subjective complaints and/ or complications: In phaco group two patients required sutures and seven had striate keratitis , while none in SICS group. Complaint of irritation was similar in both groups. Surgical time- was less for SICS group as compared to phaco group. SICS by virtue of being a faster surgery with more secure wound and significantly less astigmatism is a better option in camp patients from rural areas as compared to phacoemulsification with rigid IOL.

Abundances of presolar graphite and SiC from supernovae and AGB stars in the Murchison meteorite

DOE Office of Scientific and Technical Information (OSTI.GOV)

Amari, Sachiko; Zinner, Ernst; Gallino, Roberto

2014-05-02

Pesolar graphite grains exhibit a range of densities (1.65 – 2.20 g/cm{sup 3}). We investigated abundances of presolar graphite grains formed in supernovae and in asymptotic giant branch (AGB) stars in the four density fractions KE3, KFA1, KFB1 and KFC1 extracted from the Murchison meteorite to probe dust productions in these stellar sources. Seventy-six and 50% of the grains in the low-density fractions KE3 and KFA1, respectively, are supernova grains, while only 7.2% and 0.9% of the grains in the high-density fractions KFB1 and KFC1 have a supernova origin. Grains of AGB star origin are concentrated in the high-density fractionsmore » KFB1 and KFC1. From the C isotopic distributions of these fractions and the presence of s-process Kr with {sup 86}Kr/{sup 82}Kr = 4.43±0.46 in KFC1, we estimate that 76% and 80% of the grains in KFB1 and KFC1, respectively, formed in AGB stars. From the abundance of graphite grains in the Murchison meteorite, 0.88 ppm, the abundances of graphite from supernovae and AGB stars are 0.24 ppm and 0.44 ppm, respectively: the abundances of graphite in supernovae and AGB stars are comparable. In contrast, it has been known that 1% of SiC grains formed in supernovae and 95% formed in AGB stars in meteorites. Since the abundance of SiC grains is 5.85 ppm in the Murchison meteorite, the abundances of SiC from supernovae and AGB stars are 0.063 ppm and 5.6 ppm, respectively: the dominant source of SiC grains is AGB stars. Since SiC grains are harder and likely to survive better in space than graphite grains, the abundance of supernova graphite grains, which is higher than that of supernova SiC grains, indicates that supernovae proficiently produce graphite grains. Graphite grains from AGB stars are, in contrast, less abundant that SiC grains from AGB stars (0.44 ppm vs. 5.6 ppm). It is difficult to derive firm conclusions for graphite and SiC formation in AGB stars due to the difference in susceptibility to grain destruction. Metallicity of the parent AGB stars of graphite grains is much lower than that of SiC grains and the difference in metallicity might also have affected to the difference in the abundances in the Murchison meteorite.« less

Exposure to Fibres, Crystalline Silica, Silicon Carbide and Sulphur Dioxide in the Norwegian Silicon Carbide Industry

PubMed Central

Føreland, S.; Bye, E.; Bakke, B.; Eduard, W.

2008-01-01

Objectives: The aim of this study was to assess personal exposure to fibres, crystalline silica, silicon carbide (SiC) and sulphur dioxide in the Norwegian SiC industry. Methods: Approximately 720 fibre samples, 720 respirable dust samples and 1400 total dust samples were collected from randomly chosen workers from the furnace, processing and maintenance departments in all three Norwegian SiC plants. The respirable dust samples were analysed for quartz, cristobalite and non-fibrous SiC content. Approximately 240 sulphur dioxide samples were collected from workers in the furnace department. Results: The sorting operators from all plants, control room and cleaning operators in Plant A and charger, charger/mix and payloader operators in Plant C had a geometric mean (GM) of fibre exposure above the Norwegian occupational exposure limit (OEL) (0.1 fibre cm−3). The cleaner operators in Plant A had the highest GM exposure to respirable quartz (20 μg m−3). The charger/mix operators in Plant C had the highest GM exposure to respirable cristobalite (38 μg m−3) and the refinery crusher operators in Plant A had the highest GM exposure to non-fibrous SiC (0.65 mg m−3). Exposure to the crystalline silica and non-fibrous SiC was generally low and between 0.4 and 2.1% of the measurements exceeded the OELs. The cleaner operators in Plant A had the highest GM exposure to respirable dust (1.3 mg m−3) and total dust (21 mg m−3). GM exposures for respirable dust above the Norwegian SiC industry-specific OEL of 0.5 mg m−3 were also found for refinery crusher operators in all plants and mix, charger, charger/mix and sorting operators in Plant C. Only 4% of the total dust measurements exceeded the OEL for nuisance dust of (10 mg m−3). Exposure to sulphur dioxide was generally low. However, peaks in the range of 10–100 p.p.m. were observed for control room and crane operators in Plants A and B and for charger and charger/mix operators in Plant C. Conclusion: Workers in the SiC industry are exposed to a mixture of several agents including SiC fibres, quartz, cristobalite, non-fibrous SiC and sulphur dioxide. Exposure levels were generally below the current Norwegian OELs; however, high exposure to fibres and respirable dust still occurs in the furnace department. PMID:18550624

SiC Multi-Chip Power Modules as Power-System Building Blocks

NASA Technical Reports Server (NTRS)

Lostetter, Alexander; Franks, Steven

2007-01-01

The term "SiC MCPMs" (wherein "MCPM" signifies "multi-chip power module") denotes electronic power-supply modules containing multiple silicon carbide power devices and silicon-on-insulator (SOI) control integrated-circuit chips. SiC MCPMs are being developed as building blocks of advanced expandable, reconfigurable, fault-tolerant power-supply systems. Exploiting the ability of SiC semiconductor devices to operate at temperatures, breakdown voltages, and current densities significantly greater than those of conventional Si devices, the designs of SiC MCPMs and of systems comprising multiple SiC MCPMs are expected to afford a greater degree of miniaturization through stacking of modules with reduced requirements for heat sinking. Moreover, the higher-temperature capabilities of SiC MCPMs could enable operation in environments hotter than Si-based power systems can withstand. The stacked SiC MCPMs in a given system can be electrically connected in series, parallel, or a series/parallel combination to increase the overall power-handling capability of the system. In addition to power connections, the modules have communication connections. The SOI controllers in the modules communicate with each other as nodes of a decentralized control network, in which no single controller exerts overall command of the system. Control functions effected via the network include synchronization of switching of power devices and rapid reconfiguration of power connections to enable the power system to continue to supply power to a load in the event of failure of one of the modules. In addition to serving as building blocks of reliable power-supply systems, SiC MCPMs could be augmented with external control circuitry to make them perform additional power-handling functions as needed for specific applications: typical functions could include regulating voltages, storing energy, and driving motors. Because identical SiC MCPM building blocks could be utilized in a variety of ways, the cost and difficulty of designing new, highly reliable power systems would be reduced considerably. Several prototype DC-to-DC power-converter modules containing SiC power-switching devices were designed and built to demonstrate the feasibility of the SiC MCPM concept. In anticipation of a future need for operation at high temperature, the circuitry in the modules includes high-temperature inductors and capacitors. These modules were designed to be stacked to construct a system of four modules electrically connected in series and/or parallel. The packaging of the modules is designed to satisfy requirements for series and parallel interconnection among modules, high power density, high thermal efficiency, small size, and light weight. Each module includes four output power connectors two for serial and two for parallel output power connections among the modules. Each module also includes two signal connectors, electrically isolated from the power connectors, that afford four zones for signal interconnections among the SOI controllers. Finally, each module includes two input power connectors, through which it receives power from an in-line power bus. This design feature is included in anticipation of a custom-designed power bus incorporating sockets compatible with snap-on type connectors to enable rapid replacement of failed modules.

Atomically Flat Surfaces Developed for Improved Semiconductor Devices

NASA Technical Reports Server (NTRS)

Powell, J. Anthony

2001-01-01

New wide bandgap semiconductor materials are being developed to meet the diverse high temperature, -power, and -frequency demands of the aerospace industry. Two of the most promising emerging materials are silicon carbide (SiC) for high-temperature and high power applications and gallium nitride (GaN) for high-frequency and optical (blue-light-emitting diodes and lasers) applications. This past year Glenn scientists implemented a NASA-patented crystal growth process for producing arrays of device-size mesas whose tops are atomically flat (i.e., step-free). It is expected that these mesas can be used for fabricating SiC and GaN devices with major improvements in performance and lifetime. The promising new SiC and GaN devices are fabricated in thin-crystal films (known as epi films) that are grown on commercial single-crystal SiC wafers. At this time, no commercial GaN wafers exist. Crystal defects, known as screw defects and micropipes, that are present in the commercial SiC wafers propagate into the epi films and degrade the performance and lifetime of subsequently fabricated devices. The new technology isolates the screw defects in a small percentage of small device-size mesas on the surface of commercial SiC wafers. This enables atomically flat surfaces to be grown on the remaining defect-free mesas. We believe that the atomically flat mesas can also be used to grow GaN epi films with a much lower defect density than in the GaN epi films currently being grown. Much improved devices are expected from these improved low-defect epi films. Surface-sensitive SiC devices such as Schottky diodes and field effect transistors should benefit from atomically flat substrates. Also, we believe that the atomically flat SiC surface will be an ideal surface on which to fabricate nanoscale sensors and devices. The process for achieving atomically flat surfaces is illustrated. The surface steps present on the "as-received" commercial SiC wafer is also illustrated. because of the small tilt angle between the crystal "basal" plane and the polished wafer surface. These steps are used in normal SiC epi film growth in a process known as stepflow growth to produce material for device fabrication. In the new process, the first step is to etch an array of mesas on the SiC wafer top surface. Then, epi film growth is carried out in the step flow fashion until all steps have grown themselves out of existence on each defect-free mesa. If the size of the mesas is sufficiently small (about 0.1 by 0.1 mm), then only a small percentage of the mesas will contain an undesired screw defect. Mesas with screw defects supply steps during the growth process, allowing a rough surface with unwanted hillocks to form on the mesa. The improvement in SiC epi surface morphology achievable with the new technology is shown. An atomic force microscope image of a typical SiC commercial epilayer surface is also shown. A similar image of an SiC atomically flat epi surface grown in a Glenn laboratory is given. With the current screw defect density of commercial wafers (about 5000 defects/cm2), the yield of atomically free 0.1 by 0.l mm mesas is expected to be about 90 percent. This is large enough for many types of electronic and optical devices. The implementation of this new technology was recently published in Applied Physics Letters. This work was initially carried out in-house under a Director's Discretionary Fund project and is currently being further developed under the Information Technology Base Program.

40 CFR 439.0 - Applicability.

Code of Federal Regulations, 2011 CFR

2011-07-01

... process wastewater discharges resulting from the research and manufacture of pharmaceutical products... under SIC 3841; (2) Orthopedic, prosthetic, and surgical appliances and supplies reported under SIC 3842...

40 CFR 439.0 - Applicability.

Code of Federal Regulations, 2010 CFR

2010-07-01

... process wastewater discharges resulting from the research and manufacture of pharmaceutical products... under SIC 3841; (2) Orthopedic, prosthetic, and surgical appliances and supplies reported under SIC 3842...

Effect of high temperature annealing on the microstructure of SCS-6 SiC fibers

NASA Technical Reports Server (NTRS)

Ning, X. J.; Pirouz, P.; Bhatt, R. T.

1992-01-01

The effect of annealing the SCS-6 SiC fiber for one hour at 2000 C in an argon atmosphere is reported. The SiC grains in the fiber coarsen appreciably and the intergranular carbon films segregate to the grain junctions. It would appear that grain growth in the outer part of the fiber is primarily responsible for the loss in fiber strength and improvement in fiber creep resistance.

Fatigue Behavior of a SiC/SiC Composite at 1000 deg C in Air and in Steam

DTIC Science & Technology

2010-12-01

SiC dual-layer interphase. The composite was manufactured by a Polymer Infiltration and Pyrolysis (PIP... Polymer Infiltration and Pyrolysis (PIP) process. A seal coat of SiC and elemental boron was applied to the test specimens after machining. The tensile...manufactured by a Polymer Infiltration and Pyrolysis (PIP) process. A seal coat of SiC and elemental boron was applied to the test specimens

Silicosis surveillance in New Jersey: targeting workplaces using occupational disease and exposure surveillance data.

PubMed

Valiante, D J; Richards, T B; Kinsley, K B

1992-01-01

To identify workplaces in New Jersey with potential for silica exposure, the New Jersey Department of Health compared four-digit Standard Industrial Classifications (SICs) identified by three different data sources: the National Occupational Exposure Survey (NOES), a new Jersey silicosis case registry, and regulatory agency compliance inspections in New Jersey. In total, the three data sources identified 204 SICs in New Jersey with potential for silica exposure. Forty-five percent of these SICs were identified by NOES only, 16% by registry cases only, 6% by compliance inspections only, and 33% by two or more sources. Since different surveillance sources implicate different SICs, this type of analysis is a useful first step in planning programs for prevention of silicosis.

Chemical Vapor Deposition Of Silicon Carbide

NASA Technical Reports Server (NTRS)

Powell, J. Anthony; Larkin, David J.; Matus, Lawrence G.; Petit, Jeremy B.

1993-01-01

Large single-crystal SiC boules from which wafers of large area cut now being produced commerically. Availability of wafers opens door for development of SiC semiconductor devices. Recently developed chemical vapor deposition (CVD) process produces thin single-crystal SiC films on SiC wafers. Essential step in sequence of steps used to fabricate semiconductor devices. Further development required for specific devices. Some potential high-temperature applications include sensors and control electronics for advanced turbine engines and automobile engines, power electronics for electromechanical actuators for advanced aircraft and for space power systems, and equipment used in drilling of deep wells. High-frequency applications include communication systems, high-speed computers, and microwave power transistors. High-radiation applications include sensors and controls for nuclear reactors.

Thermal expansion and elastic anisotropy in single crystal Al2O3 and SiC reinforcements

NASA Technical Reports Server (NTRS)

Salem, Jonathan A.; Li, Zhuang; Bradt, Richard C.

1994-01-01

In single crystal form, SiC and Al2O3 are attractive reinforcing components for high temperature composites. In this study, the axial coefficients of thermal expansion and single crystal elastic constants of SiC and Al2O3 were used to determine their coefficients of thermal expansion and Young's moduli as a function of crystallographic orientation and temperature. SiC and Al2O3 exhibit a strong variation of Young's modulus with orientation; however, their moduli and anisotropies are weak functions of temperature below 1000 C. The coefficients of thermal expansion exhibit significant temperature dependence, and that of the non-cubic Al2O3 is also a function of crystallographic orientation.

40 CFR 439.0 - Applicability.

Code of Federal Regulations, 2012 CFR

2012-07-01

... applies to process wastewater discharges resulting from the research and manufacture of pharmaceutical... under SIC 3841; (2) Orthopedic, prosthetic, and surgical appliances and supplies reported under SIC 3842...

40 CFR 439.0 - Applicability.

Code of Federal Regulations, 2013 CFR

2013-07-01

... applies to process wastewater discharges resulting from the research and manufacture of pharmaceutical... under SIC 3841; (2) Orthopedic, prosthetic, and surgical appliances and supplies reported under SIC 3842...

40 CFR 439.0 - Applicability.

Code of Federal Regulations, 2014 CFR

2014-07-01

... applies to process wastewater discharges resulting from the research and manufacture of pharmaceutical... under SIC 3841; (2) Orthopedic, prosthetic, and surgical appliances and supplies reported under SIC 3842...

PhySIC_IST: cleaning source trees to infer more informative supertrees

PubMed Central

Scornavacca, Celine; Berry, Vincent; Lefort, Vincent; Douzery, Emmanuel JP; Ranwez, Vincent

2008-01-01

Background Supertree methods combine phylogenies with overlapping sets of taxa into a larger one. Topological conflicts frequently arise among source trees for methodological or biological reasons, such as long branch attraction, lateral gene transfers, gene duplication/loss or deep gene coalescence. When topological conflicts occur among source trees, liberal methods infer supertrees containing the most frequent alternative, while veto methods infer supertrees not contradicting any source tree, i.e. discard all conflicting resolutions. When the source trees host a significant number of topological conflicts or have a small taxon overlap, supertree methods of both kinds can propose poorly resolved, hence uninformative, supertrees. Results To overcome this problem, we propose to infer non-plenary supertrees, i.e. supertrees that do not necessarily contain all the taxa present in the source trees, discarding those whose position greatly differs among source trees or for which insufficient information is provided. We detail a variant of the PhySIC veto method called PhySIC_IST that can infer non-plenary supertrees. PhySIC_IST aims at inferring supertrees that satisfy the same appealing theoretical properties as with PhySIC, while being as informative as possible under this constraint. The informativeness of a supertree is estimated using a variation of the CIC (Cladistic Information Content) criterion, that takes into account both the presence of multifurcations and the absence of some taxa. Additionally, we propose a statistical preprocessing step called STC (Source Trees Correction) to correct the source trees prior to the supertree inference. STC is a liberal step that removes the parts of each source tree that significantly conflict with other source trees. Combining STC with a veto method allows an explicit trade-off between veto and liberal approaches, tuned by a single parameter. Performing large-scale simulations, we observe that STC+PhySIC_IST infers much more informative supertrees than PhySIC, while preserving low type I error compared to the well-known MRP method. Two biological case studies on animals confirm that the STC preprocess successfully detects anomalies in the source trees while STC+PhySIC_IST provides well-resolved supertrees agreeing with current knowledge in systematics. Conclusion The paper introduces and tests two new methodologies, PhySIC_IST and STC, that demonstrate the interest in inferring non-plenary supertrees as well as preprocessing the source trees. An implementation of the methods is available at: . PMID:18834542

The Effect of Grain Size on the Radiation Response of Silicon Carbide and its Dependence on Irradiation Species and Temperature

NASA Astrophysics Data System (ADS)

Jamison, Laura

In recent years the push for green energy sources has intensified, and as part of that effort accident tolerant and more efficient nuclear reactors have been designed. These reactors demand exceptional material performance, as they call for higher temperatures and doses. Silicon carbide (SiC) is a strong candidate material for many of these designs due to its low neutron cross-section, chemical stability, and high temperature resistance. The possibility of improving the radiation resistance of SiC by reducing the grain size (thus increasing the sink density) is explored in this work. In-situ electron irradiation and Kr ion irradiation was utilized to explore the radiation resistance of nanocrystalline SiC (nc-SiC), SiC nanopowders, and microcrystalline SiC. Electron irradiation simplifies the experimental results, as only isolated Frenkel pairs are produced so any observed differences are simply due to point defect interactions with the original microstructure. Kr ion irradiation simulates neutron damage, as large radiation cascades with a high concentration of point defects are produced. Kr irradiation studies found that radiation resistance decreased with particle size reduction and grain refinement (comparing nc-SiC and microcrystalline SiC). This suggests that an interface-dependent amorphization mechanism is active in SiC, suggested to be interstitial starvation. However, under electron irradiation it was found that nc-SiC had improved radiation resistance compared to single crystal SiC. This was found to be due to several factors including increased sink density and strength and the presence of stacking faults. The stacking faults were found to improve radiation response by lowering critical energy barriers. The change in radiation response between the electron and Kr ion irradiations is hypothesized to be due to either the change in ion type (potential change in amorphization mechanism) or a change in temperature (at the higher temperatures of the Kr ion irradiation, critical energy barriers can be overcome without the assistance of stacking faults). The dependence of the radiation response of SiC on grain size is not as straight forward as initially presumed. The stacking faults present in many nc-SiC materials boost radiation resistance, but an increased number of interfaces may lead to a reduction in radiation response.

PhySIC_IST: cleaning source trees to infer more informative supertrees.

PubMed

Scornavacca, Celine; Berry, Vincent; Lefort, Vincent; Douzery, Emmanuel J P; Ranwez, Vincent

2008-10-04

Supertree methods combine phylogenies with overlapping sets of taxa into a larger one. Topological conflicts frequently arise among source trees for methodological or biological reasons, such as long branch attraction, lateral gene transfers, gene duplication/loss or deep gene coalescence. When topological conflicts occur among source trees, liberal methods infer supertrees containing the most frequent alternative, while veto methods infer supertrees not contradicting any source tree, i.e. discard all conflicting resolutions. When the source trees host a significant number of topological conflicts or have a small taxon overlap, supertree methods of both kinds can propose poorly resolved, hence uninformative, supertrees. To overcome this problem, we propose to infer non-plenary supertrees, i.e. supertrees that do not necessarily contain all the taxa present in the source trees, discarding those whose position greatly differs among source trees or for which insufficient information is provided. We detail a variant of the PhySIC veto method called PhySIC_IST that can infer non-plenary supertrees. PhySIC_IST aims at inferring supertrees that satisfy the same appealing theoretical properties as with PhySIC, while being as informative as possible under this constraint. The informativeness of a supertree is estimated using a variation of the CIC (Cladistic Information Content) criterion, that takes into account both the presence of multifurcations and the absence of some taxa. Additionally, we propose a statistical preprocessing step called STC (Source Trees Correction) to correct the source trees prior to the supertree inference. STC is a liberal step that removes the parts of each source tree that significantly conflict with other source trees. Combining STC with a veto method allows an explicit trade-off between veto and liberal approaches, tuned by a single parameter.Performing large-scale simulations, we observe that STC+PhySIC_IST infers much more informative supertrees than PhySIC, while preserving low type I error compared to the well-known MRP method. Two biological case studies on animals confirm that the STC preprocess successfully detects anomalies in the source trees while STC+PhySIC_IST provides well-resolved supertrees agreeing with current knowledge in systematics. The paper introduces and tests two new methodologies, PhySIC_IST and STC, that demonstrate the interest in inferring non-plenary supertrees as well as preprocessing the source trees. An implementation of the methods is available at: http://www.atgc-montpellier.fr/physic_ist/.

Temperature Distribution Within a Defect-Free Silicon Carbide Diode Predicted by a Computational Model

NASA Technical Reports Server (NTRS)

Kuczmarski, Maria A.; Neudeck, Philip G.

2000-01-01

Most solid-state electronic devices diodes, transistors, and integrated circuits are based on silicon. Although this material works well for many applications, its properties limit its ability to function under extreme high-temperature or high-power operating conditions. Silicon carbide (SiC), with its desirable physical properties, could someday replace silicon for these types of applications. A major roadblock to realizing this potential is the quality of SiC material that can currently be produced. Semiconductors require very uniform, high-quality material, and commercially available SiC tends to suffer from defects in the crystalline structure that have largely been eliminated in silicon. In some power circuits, these defects can focus energy into an extremely small area, leading to overheating that can damage the device. In an effort to better understand the way that these defects affect the electrical performance and reliability of an SiC device in a power circuit, the NASA Glenn Research Center at Lewis Field began an in-house three-dimensional computational modeling effort. The goal is to predict the temperature distributions within a SiC diode structure subjected to the various transient overvoltage breakdown stresses that occur in power management circuits. A commercial computational fluid dynamics computer program (FLUENT-Fluent, Inc., Lebanon, New Hampshire) was used to build a model of a defect-free SiC diode and generate a computational mesh. A typical breakdown power density was applied over 0.5 msec in a heated layer at the junction between the p-type SiC and n-type SiC, and the temperature distribution throughout the diode was then calculated. The peak temperature extracted from the computational model agreed well (within 6 percent) with previous first-order calculations of the maximum expected temperature at the end of the breakdown pulse. This level of agreement is excellent for a model of this type and indicates that three-dimensional computational modeling can provide useful predictions for this class of problem. The model is now being extended to include the effects of crystal defects. The model will provide unique insights into how high the temperature rises in the vicinity of the defects in a diode at various power densities and pulse durations. This information also will help researchers in understanding and designing SiC devices for safe and reliable operation in high-power circuits.

Experimental investigation of grain boundaries misorientations and nano twinning induced strengthening on addition of silicon carbide in pulse electrodeposited nickel tungsten composite coating

DOE Office of Scientific and Technical Information (OSTI.GOV)

Rahman, O.S. Asiq; Wasekar, Nitin P.; Sundararajan, G.

Nanoindentation was performed on silicon carbide (SiC) reinforced pulse electrodeposited nickel-tungsten (Ni-W) composite coating. Addition of 5 vol.% of SiC in Ni-W coating increased the hardness from 10.31 ± 0.65 GPa to 14.32 ± 0.63 GPa and elastic modulus from 119.74 ± 3.15 GPa to 139.26 ± 2.09 GPa. Increased hardness and elastic modulus directly translates to the improved strengthening in the coating. An experimental investigation of strengthening mechanism was carried out in Ni-W-5 vol.% SiC alloy. Two simultaneous phenomena viz. grain refinement and increased internal strain was observed, which increased the dislocation density from 5.51 × 10{sup 18} m{supmore » −2} to 1.346 × 10{sup 19} m{sup −2} on reinforcement of 5 vol.% of SiC in Ni-W coating. Increased dislocation density promoted the formation of grain boundary misorientations and nano twinning. Low angle grain boundary, high angle grain boundary and nano twinning were identified using high resolution transmission electron microscope (HR-TEM) image and their role in strengthening mechanism was discussed in details. - Highlights: • SiC reinforced pulse electrodeposition Ni-W coating was deposited on steel. • Nanoindentation showed the increased mechanical properties on addition of SiC. • Grain refinement and increased internal strain was observed in Ni-W-SiC coating. • Dislocation density increased on reinforcement of SiC in Ni-W coating. • Increased dislocation density triggered grain boundary misorientation and twinning.« less

Effect of different thickness crystalline SiC buffer layers on the ordering of MgB{sub 2} films probed by extended x-ray absorption fine structure

DOE Office of Scientific and Technical Information (OSTI.GOV)

Putri, W. B. K.; Tran, D. H.; Kang, B., E-mail: bwkang@chungbuk.ac.kr

2014-03-07

Extended X-ray absorption fine structure (EXAFS) spectroscopy is a powerful method to investigate the local structure of thin films. Here, we have studied EXAFS of MgB{sub 2} films grown on SiC buffer layers. Crystalline SiC buffer layers with different thickness of 70, 100, and 130 nm were deposited on the Al{sub 2}O{sub 3} (0001) substrates by using a pulsed laser deposition method, and then MgB{sub 2} films were grown on the SiC buffer layer by using a hybrid physical-chemical vapor deposition technique. Transition temperature of MgB{sub 2} film decreased with increasing thickness of SiC buffer layer. However, the T{sub c} droppingmore » went no farther than 100 nm-thick-SiC. This uncommon behavior of transition temperature is likely to be created from electron-phonon interaction in MgB{sub 2} films, which is believed to be related to the ordering of MgB{sub 2} atomic bonds, especially in the ordering of Mg–Mg bonds. Analysis from Mg K-edge EXAFS measurements showed interesting ordering behavior of MgB{sub 2} films. It is noticeable that the ordering of Mg–B bonds is found to decrease monotonically with the increase in SiC thickness of the MgB{sub 2} films, while the opposite happens with the ordering in Mg–Mg bonds. Based on these results, crystalline SiC buffer layers in MgB{sub 2} films seemingly have evident effects on the alteration of the local structure of the MgB{sub 2} film.« less

Oxidation of TaSi2-Containing ZrB2-SiC Ultra-High Temperature Materials

NASA Technical Reports Server (NTRS)

Opila, Elizabeth J.; Smith, Jim; Levine, Stanley R.; Lorincz, Jonathan; Reigel, Marissa

2010-01-01

Hot pressed coupons of composition ZrB2-20 v% SiC-5 v% TaSi2 and ZrB2-20 v% SiC-20 v% TaSi2 were oxidized in stagnant air at temperatures of 1627 and 1927C for one, five and ten 10-minute cycles. The oxidation reactions were characterized by weight change kinetics, x-ray diffraction, and SEM/EDS. Detailed WDS/microprobe quantitative analyses of the oxidation products were conducted for the ZrB2-20 v% SiC-20 v% TaSi2 sample oxidized for five 10-minute cycles at 1927C. Oxidation kinetics and product formation were compared to ZrB2-20 v% SiC with no TaSi2 additions. It was found that the 20 v% TaSi2 composition exhibited improved oxidation resistance relative to the material with no TaSi2 additions at 1627C. However, for exposures at 1927C less oxidation resistance and extensive liquid phase formation were observed compared to the material with no TaSi2 additions. Attempts to limit the liquid phase formation by reducing the TaSi2 content to 5 v% were unsuccessful. In addition, the enhanced oxidation resistance at 1627C due to 20 v% TaSi2 additions was not achieved at the 5 v% addition level. The observed oxidation product evolution is discussed in terms of thermodynamics and phase equilibria for the TaSi2-containing ZrB2-SiC material system. TaSi2-additions to ZrB2-SiC at any level are not recommended for ultra-high temperature (>1900C) applications due to excessive liquid phase formation.

Tribological Performance of Ni3Al Matrix Self-Lubricating Composites Containing Multilayer Graphene and Ti3SiC2 at Elevated Temperatures

NASA Astrophysics Data System (ADS)

Yan, Zhao; Shi, Xiaoliang; Huang, Yuchun; Deng, Xiaobin; Yang, Kang; Liu, Xiyao

2017-09-01

The application of Ni3Al-based alloy (NA) in the field of aerospace was limited by its poor tribological properties. For improving the tribological performance of NA, multilayer graphene (MLG) and Ti3SiC2 were added in Ni3Al matrix composites. Tribological behavior of Ni3Al matrix composites containing 1.5 wt.% MLG and 10 wt.% Ti3SiC2 (NMT) against Si3N4 ball at 12 N-0.2 m/s from 25 to 750 °C was investigated. The results showed that NMT exhibited the excellent tribological behavior [lower friction coefficients (0.26-0.57) and less wear resistance (3.1-6.5 × 10-6 mm3 N-1 m-1)] due to synergetic effect of MLG and Ti3SiC2 over a wide temperature range from 25 to 750 °C. At 25-350 °C, part of MLG enriched on worn surface could play a role in reducing friction and improving wear resistance. At 350-550 °C, although MLG gradually lost the lubricating properties, the partial decomposition of Ti3SiC2 could continually improve the tribological properties of NMT. At 550-750 °C, Ti3SiC2 on worn surface was oxidized to form lubricating film, while Ti3SiC2 in the subsurface played an important role in supporting the film, resulting in the excellent high-temperature tribological performance. The research had good guiding significance for the preparation of wide temperature range self-lubricating material and the study of synergetic effect of complex solid lubricants.

Properties investigation and microstructures characterization of SiCp/6061Al composites produced by PM route

NASA Astrophysics Data System (ADS)

Wang, A. Q.; Tian, H. W.; Xie, J. P.

2018-01-01

In this study, 35 vol.% SiC particles with different sizes reinforced 6061 aluminium alloy matrix composites were prepared by a powder metallurgy method. The Scanning Electron Microscope (SEM) images of composites were observed, the Coefficient of Thermal Expansion (CTE) and tensile strength of composites were examined, and the influences of SiC particle size on microstructures and properties of the composites were analyzed. Furthermore, the SiCp/6061Al composites with SiC particle size of 7.5 µm were selected to investigate the SiCp/Al interface microstructure and precipitated phases by the means of SEM, TEM and HRTEM. The study indicated that, with the increase of SiC particle size, the SiC particles distributed more uniformly in the matrix, the CTE of composites increased, but the tensile strength of composites decreased. The SiCp/Al interface in this experiment is clean and smooth, and the combination mechanism of SiC and Al is the formation of a half coherent interface by closely matching of atoms. Some micron-sized coarse intermetallic particles existed in the hot-pressed composites, such as random-shaped Mg2Si, long stick shaped Al15(Mn, Fe, Cu)3Si2. When the composites were solution treated at 510 °C for 2 h and then aging treated at 190 °C for 9 h, except long stick shaped Al15(Mn, Fe, Cu)3Si2, numerous nano-sized precipitated phases (Mg2Si) with diameters of 50-200 nm dispersively distributed in the matrix. After heat treatment, the tensile strength of composite with SiC particle size of 7.5 µm enhance from 298 MPa to 341 MPa.

Porous biomorphic silicon carbide ceramics coated with hydroxyapatite as prospective materials for bone implants.

PubMed

Gryshkov, Oleksandr; Klyui, Nickolai I; Temchenko, Volodymyr P; Kyselov, Vitalii S; Chatterjee, Anamika; Belyaev, Alexander E; Lauterboeck, Lothar; Iarmolenko, Dmytro; Glasmacher, Birgit

2016-11-01

Porous and cytocompatible silicon carbide (SiC) ceramics derived from wood precursors and coated with bioactive hydroxyapatite (HA) and HA-zirconium dioxide (HA/ZrO2) composite are materials with promising application in engineering of bone implants due to their excellent mechanical and structural properties. Biomorphic SiC ceramics have been synthesized from wood (Hornbeam, Sapele, Tilia and Pear) using a forced impregnation method. The SiC ceramics have been coated with bioactive HA and HA/ZrO2 using effective gas detonation deposition approach (GDD). The surface morphology and cytotoxicity of SiC ceramics as well as phase composition and crystallinity of deposited coatings were analyzed. It has been shown that the porosity and pore size of SiC ceramics depend on initial wood source. The XRD and FTIR studies revealed the preservation of crystal structure and phase composition of in the HA coating, while addition of ZrO2 to the initial HA powder resulted in significant decomposition of the final HA/ZrO2 coating and formation of other calcium phosphate phases. In turn, NIH 3T3 cells cultured in medium exposed to coated and uncoated SiC ceramics showed high re-cultivation efficiency as well as metabolic activity. The recultivation efficiency of cells was the highest for HA-coated ceramics, whereas HA/ZrO2 coating improved the recultivation efficiency of cells as compared to uncoated SiC ceramics. The GDD method allowed generating homogeneous HA coatings with no change in calcium to phosphorus ratio. In summary, porous and cytocompatible bio-SiC ceramics with bioactive coatings show a great promise in construction of light, robust, inexpensive and patient-specific bone implants for clinical application. Copyright © 2016 Elsevier B.V. All rights reserved.

Prediction of Individual Serum Infliximab Concentrations in Inflammatory Bowel Disease by a Bayesian Dashboard System.

PubMed

Eser, Alexander; Primas, Christian; Reinisch, Sieglinde; Vogelsang, Harald; Novacek, Gottfried; Mould, Diane R; Reinisch, Walter

2018-01-30

Despite a robust exposure-response relationship of infliximab in inflammatory bowel disease (IBD), attempts to adjust dosing to individually predicted serum concentrations of infliximab (SICs) are lacking. Compared with labor-intensive conventional software for pharmacokinetic (PK) modeling (eg, NONMEM) dashboards are easy-to-use programs incorporating complex Bayesian statistics to determine individual pharmacokinetics. We evaluated various infliximab detection assays and the number of samples needed to precisely forecast individual SICs using a Bayesian dashboard. We assessed long-term infliximab retention in patients being dosed concordantly versus discordantly with Bayesian dashboard recommendations. Three hundred eighty-two serum samples from 117 adult IBD patients on infliximab maintenance therapy were analyzed by 3 commercially available assays. Data from each assay was modeled using NONMEM and a Bayesian dashboard. PK parameter precision and residual variability were assessed. Forecast concentrations from both systems were compared with observed concentrations. Infliximab retention was assessed by prediction for dose intensification via Bayesian dashboard versus real-life practice. Forecast precision of SICs varied between detection assays. At least 3 SICs from a reliable assay are needed for an accurate forecast. The Bayesian dashboard performed similarly to NONMEM to predict SICs. Patients dosed concordantly with Bayesian dashboard recommendations had a significantly longer median drug survival than those dosed discordantly (51.5 versus 4.6 months, P < .0001). The Bayesian dashboard helps to assess the diagnostic performance of infliximab detection assays. Three, not single, SICs provide sufficient information for individualized dose adjustment when incorporated into the Bayesian dashboard. Treatment adjusted to forecasted SICs is associated with longer drug retention of infliximab. © 2018, The American College of Clinical Pharmacology.

Process for the controlled growth of single-crystal films of silicon carbide polytypes on silicon carbide wafers

NASA Technical Reports Server (NTRS)

Powell, J. Anthony (Inventor)

1991-01-01

This invention is a method for the controlled growth of single-crystal semiconductor device quality films of SiC polytypes on vicinal (0001) SiC wafers with low tilt angles. Both homoepitaxial and heteroepitaxial SiC films can be produced on the same wafer. In particular, 3C-SiC and 6H-SiC films can be produced within selected areas of the same 6H-SiC wafer.

Process for the controlled growth of single-crystal films of silicon carbide polytypes on silicon carbide wafers

NASA Technical Reports Server (NTRS)

Larkin, David J. (Inventor); Powell, J. Anthony (Inventor)

1992-01-01

A method for the controlled growth of single-crystal semiconductor-device-quality films of SiC polytypes on vicinal (0001) SiC wafers with low tilt angles is presented. Both homoepitaxial and heteroepitaxial SiC films can be produced on the same wafer. In particular, 3C-SiC and 6H-SiC films can be produced within selected areas of the same 6H-SiC wafer.

Nanocrystalline SiC film thermistors for cryogenic applications

NASA Astrophysics Data System (ADS)

Mitin, V. F.; Kholevchuk, V. V.; Semenov, A. V.; Kozlovskii, A. A.; Boltovets, N. S.; Krivutsa, V. A.; Slepova, A. S.; Novitskii, S. V.

2018-02-01

We developed a heat-sensitive material based on nanocrystalline SiC films obtained by direct deposition of carbon and silicon ions onto sapphire substrates. These SiC films can be used for resistance thermometers operating in the 2 K-300 K temperature range. Having high heat sensitivity, they are relatively low sensitive to the magnetic field. The designs of the sensors are presented together with a discussion of their thermometric characteristics and sensitivity to magnetic fields.

Processing and Properties of Silicon Carbide Reinforced Reaction Bonded Silicon Nitride Composites

DTIC Science & Technology

1992-11-30

work as well as of polymer derived and composite parts will be discussed. 3. Mechanical Behavior of a Continuous SiC Fiber Reinforced RBSN, S.V...Silicon carbide paniculate composites exhibited improved fracture toughnesses and evidence of R-Curve behavior. Composites made with SiC (w...i£L LIST OF TABLES Page No. 1. Summary of mechanical properties measured for RBSN and RBSN/ SiC 7 composites 2. Summary of characteristics for

Low Temperature Reactivities of Ultra-High Temperature Ceramics (Hf-X System)

DTIC Science & Technology

2006-03-01

as interacting fillers with the preceramic polymer formulations. In situ formation of the SiC phase was also evaluated as a practical approach in...silicon (reaction-bonded SiC ), which was introduced either as a powder mixed in the original composite formulation or as a subsequent infiltrant that...and their aerospace and turbine applications has led to a renewal of activities to fabricate MB 2/ SiC composites as the materials of choice, because

Low Temperature, Low Pressure Fabrication of Ultra High Temperature Ceramics (UHTCs)

DTIC Science & Technology

2006-08-01

preceramic polymers that convert by pyrolysis to SiC , SiOC or C. Potential polymeric precursors to ZrB2 and ZrC were not selected, because they were not...limited extent, C/ SiC composite substrates using preceramic and precarbon polymers combined with inert fillers and/or reactive metals. The evolved... SiC is an obvious example for powder mixed with a preceramic polymer binder to achieve the desired low-temperature processing. The polymeric

Postoperative corneal shape changes: microincision versus small-incision coaxial cataract surgery.

PubMed

Hayashi, Ken; Yoshida, Motoaki; Hayashi, Hideyuki

2009-02-01

To compare changes in corneal topography and in regular and irregular astigmatism after coaxial clear corneal microincision cataract surgery (MICS) and after coaxial small-incision cataract surgery (SICS). Hayashi Eye Hospital, Fukuoka, Japan. Induced corneal astigmatism was determined using vector analysis. The averaged corneal shape changes and degree of irregular astigmatism were examined using videokeratography preoperatively as well as 2 days and 1, 2, 4, and 8 weeks postoperatively. One hundred twenty eyes of 60 patients scheduled for phacoemulsification were evaluated. Sixty eyes had MICS (2.00 mm), and the 60 contralateral eyes had SICS (2.65 mm). The mean induced corneal astigmatism was significantly less in the MICS group than in the SICS group (P

Boron doping induced thermal conductivity enhancement of water-based 3C-Si(B)C nanofluids.

PubMed

Li, Bin; Jiang, Peng; Zhai, Famin; Chen, Junhong; Bei, Guoping; Hou, Xinmei; Chou, Kuo-Chih

2018-08-31

In this paper, the fabrication and thermal conductivity (TC) of water-based nanofluids using boron (B)-doped SiC as dispersions are reported. Doping B into the β-SiC phase leads to the shrinkage of the SiC lattice due to the substitution of Si atoms (0.134 nm radius) by smaller B atoms (0.095 nm radius). The presence of B in the SiC phase also promotes crystallization and grain growth of obtained particles. The tailored crystal structure and morphology of B-doped SiC nanoparticles are beneficial for the TC improvement of the nanofluids by using them as dispersions. Using B-doped SiC nanoparticles as dispersions for nanofluids, a remarkable improvement in stability was achieved in SiC-B6 nanofluid at pH 11 by means of the Zeta potential measurement. By dispersing B-doped SiC nanoparticles in water-based fluids, the TC of the as-prepared nanofluids containing only 0.3 vol.% SiC-B6 nanoparticles is remarkably raised to 39.3% at 30 °C compared to the base fluids, and is further enhanced with the increased temperature. The main reasons for the improvement in TC of SiC-B6 nanofluids are more stable dispersion and intensive charge ions vibration around the surface of nanoparticles as well as the enhanced TC of the SiC-B dispersions.

Foraging mode and evolution of strike-induced chemosensory searching in lizards.

PubMed

Cooper, William E

2003-04-01

Strike-induced chemosensory searching (SICS) in lizards and snakes is a means of relocating prey by scent-trailing. The two main components of SICS are an elevated tongue-flick rate for vomerolfactory sampling after biting prey (PETF) and searching movements. In combination, these behaviors permit scent-trailing. Prey chemical discrimination, which is a prerequisite for SICS, is present in active foragers, but not in ambush foragers. Using comparative data. I show that searching movements and SICS have undergone correlated evolution with foraging mode and with prey chemical discrimination in lizards. This suggests that active foraging selects for prey chemical discrimination, which is then employed to search for escaped prey using the typical movements and tongue-flicking behaviors of active foragers. SICS in lizards is simply heightened active foraging after biting prey. In nonvenomous snakes, SICS is similar to that in lizards but is not restricted to active foragers. Only highly venomous snakes voluntarily release dangerous prey upon envenomation, pause to let the venom incapacitate the prey, and then relocate the prey by scent-trailing. PETF was observed in two ambush foragers and is not evolutionarily correlated with foraging mode or searching movements. Because it occurs in species lacking prey chemical discrimination, such PETF may be a response to gustatory cues or to internal chemicals not encountered on surfaces or trails of uninjured prey.

Formation of crystalline heteroepitaxial SiC films on Si by carbonization of polyimide Langmuir-Blodgett films

NASA Astrophysics Data System (ADS)

Luchinin, Viktor V.; Goloudina, Svetlana I.; Pasyuta, Vyacheslav M.; Panov, Mikhail F.; Smirnov, Alexander N.; Kirilenko, Demid A.; Semenova, Tatyana F.; Sklizkova, Valentina P.; Gofman, Iosif V.; Svetlichnyi, Valentin M.; Kudryavtsev, Vladislav V.

2017-06-01

High-quality crystalline nano-thin SiC films on Si substrates were prepared by carbonization of polyimide (PI) Langmuir-Blodgett (LB) films. The obtained films were characterized by Fourier transform-infrared (FTIR) spectroscopy, X-ray diffraction (XRD) analysis, Raman spectroscopy, transmission electon microscopy (TEM), transmission electron diffraction (TED), and scanning electron microscopy (SEM). We demonstrated that the carbonization of a PI film on a Si substrate at 1000 °C leads to the formation of a carbon film and SiC nanocrystals on the Si substrate. It was found that five planes in the 3C-SiC(111) film are aligned with four Si(111) planes. As a result of repeated annealing of PI films containing 121 layers at 1200 °C crystalline SiC films were formed on the Si substrate. It was shown that the SiC films (35 nm) grown on Si(111) at 1200 °C have a mainly cubic 3C-SiC structure with small amount of hexagonal polytypes. Only 3C-SiC films (30 nm) were formed on the Si(100) substrate at the same temperature. It was shown that the SiC films (30-35 nm) can cover the voids with size up to 10 µm in the Si substrate. The current-voltage (I-V) characteristics of the n-Si/n-SiC heterostructure were obtained by conductive atomic force microscopy.

A Review of Surgical Informed Consent: Past, Present, and Future. A Quest to Help Patients Make Better Decisions

PubMed Central

Keulers, Bram J.; Scheltinga, Marc R. M.; Spauwen, Paul H. M.; van der Wilt, Gert-Jan

2010-01-01

Background Informed consent (IC) is a process requiring a competent doctor, adequate transfer of information, and consent of the patient. It is not just a signature on a piece of paper. Current consent processes in surgery are probably outdated and may require major changes to adjust them to modern day legislation. A literature search may provide an opportunity for enhancing the quality of the surgical IC (SIC) process. Methods Relevant English literature obtained from PubMed, Picarta, PsycINFO, and Google between 1993 and 2009 was reviewed. Results The body of literature with respect to SIC is slim and of moderate quality. The SIC process is an underestimated part of surgery and neither surgeons nor patients sufficiently realize its importance. Surgeons are not specifically trained and lack the competence to guide patients through a legally correct SIC process. Computerized programs can support the SIC process significantly but are rarely used for this purpose. Conclusions IC should be integrated into our surgical practice. Unfortunately, a big gap exists between the theoretical/legal best practice and the daily practice of IC. An optimally informed patient will have more realistic expectations regarding a surgical procedure and its associated risks. Well-informed patients will be more satisfied and file fewer legal claims. The use of interactive computer-based programs provides opportunities to improve the SIC process. PMID:20372902

Effect of Ti3SiC2 on Tribological Properties of M50 Matrix Self-Lubricating Composites from 25 to 450 °C

NASA Astrophysics Data System (ADS)

Deng, Xiaobin; Shi, Xiaoliang; Liu, Xiyao; Huang, Yuchun; Yan, Zhao; Yang, Kang; Wang, Yufu

2017-09-01

The tribological performance is a key factor for M50 steel that is widely used in aero-engine main-shaft bearings. In this study, the tribological properties of M50 matrix self-lubricating composites with different contents of Ti3SiC2 against Si3N4 ceramic counterpart are investigated at 15 N-0.2 m/s from 25 to 450 °C. The results showed that M50 with 10 wt.% Ti3SiC2 (MT10) exhibits the lower friction coefficients (0.21-0.78) and less wear rates (1.78-3.14 × 10-6 mm3 N-1 m-1) at 25-450 °C. Especially at 350 °C, MT10 shows the lowest friction coefficient and wear rate owing to the formation of smooth lubricating layer containing Ti3SiC2 and oxides. Ti3SiC2 and compacted Ti-Si-oxides are uniformly distributed in the lubricating layer, which can well improve the anti-friction and anti-wear performance of MT10. The mechanically mixed layer containing massive Ti3SiC2 can sustain the lubricating layer, resulting in the increase of anti-wear performance of MT10. MT10 could be applied under the practical conditions of friction and wear for its outstanding anti-friction and anti-wear performance.

Processing and properties of SiC whisker reinforced Si sub 3 N sub 4 ceramic matrix composites

DOE Office of Scientific and Technical Information (OSTI.GOV)

Nunn, S.D.

1991-01-01

Silicon carbide whiskers reinforced silicon nitride ceramic matrix composites were pressureless sintered to high density by liquid phase sintering. Important processing parameters included: whisker dispersion by ultrasonic shear homogenization, particle refinement by attrition milling, pressure slip casting to obtain high greed densities, and sintering in a protective powder bed to limit decomposition. Composites with a {beta}20-Si{sub 3}N{sub 4} solid solution matrix containing 20 vol.% SiC whiskers were sintered to 98-100% theoretical density; composites having a Si{sub 3}N{sub 4} matrix containing YAG sintering aid were sintered to 98% of the theoretical density with 20 vol.% SiC whiskers, and 94% density withmore » 30 vol.% SiC whiskers. Analysis of the pressureless sintered composites revealed orientation of the SiC whiskers and the Si{sub 3}N{sub 4} matrix grains. The mechanical properties of hot pressed Si{sub 3}N{sub 4} composites reinforced with 20 vol.% SiC whiskers were shown to depend on the characteristics of the intergranular phase. Variations in the properties of the composites were analyzed in terms of the amount and morphology of the secondary phase, and the development of internal residual stresses due to the thermal expansion mismatch between the sintering aid phase at the grain boundaries.« less

Slow crack growth in SiC platelet reinforced Al{sub 2}O{sub 3} composite

DOE Office of Scientific and Technical Information (OSTI.GOV)

Belmonte, M.; Moya, J.S.; Miranzo, P.

1996-05-15

Ceramic matrix composites with enhanced toughness are at present projected for many structural applications such as high temperature components in gas turbine, structures for hypersonic aircraft and bioprosthetic devices. The incorporation of a SiC dispersed second phase in form of whisker or platelets into an alumina matrix has allowed to improve material toughness, thermal shock resistance and R-curve behavior. Recently, considerable interest in the acquisition of slow crack growth (SCG) data for ceramic materials has arisen in order to predict the service lifetime of brittle components. Non-oxide ceramics such as SiC and Si{sub 3}N{sub 4} are extremely resistant to crackmore » growth at low temperatures, whereas oxide ceramics are susceptible to stress corrosion because of the chemical interaction between water and stressed cracks. Up to date, there are not many papers devoted to SCG of SiC whiskers reinforced Al{sub 2}O{sub 3} composites and none about SiC platelets used as reinforcement. The objective of the present work has been to evaluate the slow crack growth in a Al{sub 2}O{sub 3}/SiC-platelet composite by double torsion testing analysis. The results will be compared with those obtained for SiC whisker reinforced Al{sub 2}O{sub 3} composite tested using the same conditions.« less

Friction Stir Processing of Copper-Coated SiC Particulate-Reinforced Aluminum Matrix Composite

PubMed Central

Huang, Chih-Wei; Aoh, Jong-Ning

2018-01-01

In the present work, we proposed a novel friction stir processing (FSP) to produce a locally reinforced aluminum matrix composite (AMC) by stirring copper-coated SiC particulate reinforcement into Al6061 alloy matrix. Electroless-plating process was applied to deposit the copper surface coating on the SiC particulate reinforcement for the purpose of improving the interfacial adhesion between SiC particles and Al matrix. The core-shell SiC structure provides a layer for the atomic diffusion between aluminum and copper to enhance the cohesion between reinforcing particles and matrix on one hand, the dispersion of fine copper in the Al matrix during FSP provides further dispersive strengthening and solid solution strengthening, on the other hand. Hardness distribution and tensile results across the stir zone validated the novel concept in improving the mechanical properties of AMC that was realized via FSP. Optical microscope (OM) and Transmission Electron Microscopy (TEM) investigations were conducted to investigate the microstructure. Energy dispersive spectrometer (EDS), electron probe micro-analyzer (EPMA), and X-ray diffraction (XRD) were explored to analyze the atomic inter-diffusion and the formation of intermetallic at interface. The possible strengthening mechanisms of the AMC containing Cu-coated SiC particulate reinforcement were interpreted. The concept of strengthening developed in this work may open a new way of fabricating of particulate reinforced metal matrix composites. PMID:29652846

DOE Office of Scientific and Technical Information (OSTI.GOV)

Henager, Jr., C. H.; Nguyen, Ba N.; Kurtz, Richard J.

The international fusion community has designed a miniature torsion specimen for neutron irradiation studies of joined SiC and SiC/SiC composite materials. For this research, miniature torsion joints based on this specimen design were fabricated using displacement reactions between Si and TiC to produce Ti 3SiC 2 + SiC joints with SiC and tested in torsion-shear prior to and after neutron irradiation. However, many miniature torsion specimens fail out-of-plane within the SiC specimen body, which makes it problematic to assign a shear strength value to the joints and makes it difficult to compare unirradiated and irradiated strengths to determine irradiation effects.more » Finite element elastic damage and elastic–plastic damage models of miniature torsion joints are developed that indicate shear fracture is more likely to occur within the body of the joined sample and cause out-of-plane failures for miniature torsion specimens when a certain modulus and strength ratio between the joint material and the joined material exists. The model results are compared and discussed with regard to unirradiated and irradiated test data for a variety of joint materials. The unirradiated data includes Ti 3SiC 2 + SiC/CVD-SiC joints with tailored joint moduli, and includes steel/epoxy and CVD-SiC/epoxy joints. Finally, the implications for joint data based on this sample design are discussed.« less

Electron microscopy study of Pd, Ag, and Cs in carbon areas in the locally corroded SiC layer in a neutron-irradiated TRISO fuel particle

DOE Office of Scientific and Technical Information (OSTI.GOV)

Wen, Haiming; van Rooyen, Isabella J.; Hunn, John D.

Here, a detailed electron microscopy study was performed on focused ion beam-prepared lamellae from different locations relative to a crack across the inner pyrolytic carbon layer of a neutron-irradiated tristructural isotropic-coated particle. The distribution and composition of fission products across the inner pyrolytic carbon and silicon carbide (SiC) layers were studied. Previously, this crack was identified in the particle that released significant inventory fractions of cesium and silver during irradiation and displayed localized palladium pileup with SiC degradation. In this study, carbon areas were found in the SiC layer close to the crack tip and they had precipitates that consistedmore » mostly of palladium silicides or palladium, with silver and/or cadmium frequently identified. Results confirmed that areas in the SiC layer close to the crack tip with localized accumulation of palladium were corroded by palladium, forming pure carbon areas and palladium silicide that provided pathways for silver, cadmium and cesium migration.« less

Stress Analysis of SiC MEMS Using Raman Spectroscopy

NASA Astrophysics Data System (ADS)

Ness, Stanley J.; Marciniak, M. A.; Lott, J. A.; Starman, L. A.; Busbee, J. D.; Melzak, J. M.

2003-03-01

During the fabrication of Micro-Electro-Mechanical Systems (MEMS), residual stress is often induced in the thin films that are deposited to create these systems. These stresses can cause the device to fail due to buckling, curling, or fracture. Industry is looking for ways to characterize the stress during the deposition of thin films in order to reduce or eliminate device failure. Micro-Raman spectroscopy has been successfully used to characterize poly-Si MEMS devices made with the MUMPS® process. Raman spectroscopy was selected because it is nondestructive, fast and has the potential for in situ stress monitoring. This research attempts to use Raman spectroscopy to analyze the stress in SiC MEMS made with the MUSiC® process. Raman spectroscopy is performed on 1-2-micron-thick SiC thin films deposited on silicon, silicon nitride, and silicon oxide substrates. The most common poly-type of SiC found in thin film MEMS made with the MUSiC® process is 3C-SiC. Research also includes baseline spectra of 6H, 4H, and 15R poly-types of bulk SiC.

Injected ion energy dependence of SiC film deposited by low-energy SiC3H9+ ion beam produced from hexamethyldisilane

NASA Astrophysics Data System (ADS)

Yoshimura, Satoru; Sugimoto, Satoshi; Takeuchi, Takae; Murai, Kensuke; Kiuchi, Masato

2018-04-01

We mass-selected SiC3H9+ ions from various fragments produced through the decomposition of hexamethyldisilane, and finally produced low-energy SiC3H9+ ion beams. The ion beams were injected into Si(1 0 0) substrates and the dependence of deposited films on injected ion energy was then investigated. Injected ion energies were 20, 100, or 200 eV. Films obtained were investigated with X-ray diffraction, X-ray photoelectron spectroscopy, and Raman spectroscopy. X-ray diffraction and X-ray photoelectron spectroscopy of the substrates obtained following the injection of 20 eV ions demonstrated the occurrence of silicon carbide film (3C-SiC) deposition. On the other hand, Raman spectroscopy showed that the films deposited by the injection of 100 or 200 eV ions included 3C-SiC plus diamond-like carbon. Ion beam deposition using hexamethyldisilane-derived 20 eV SiC3H9+ ions is an efficient technique for 3C-SiC film formation on Si substrates.

Thermal degradation study of silicon carbide threads developed for advanced flexible thermal protection systems

NASA Technical Reports Server (NTRS)

Tran, Huy Kim; Sawko, Paul M.

1992-01-01

Silicon carbide (SiC) fiber is a material that may be used in advanced thermal protection systems (TPS) for future aerospace vehicles. SiC fiber's mechanical properties depend greatly on the presence or absence of sizing and its microstructure. In this research, silicon dioxide is found to be present on the surface of the fiber. Electron Spectroscopy for Chemical Analysis (ESCA) and Scanning Electron Microscopy (SEM) show that a thin oxide layer (SiO2) exists on the as-received fibers, and the oxide thickness increases when the fibers are exposed to high temperature. ESCA also reveals no evidence of Si-C bonding on the fiber surface on both as-received and heat treated fibers. The silicon oxide layer is thought to signal the decomposition of SiC bonds and may be partially responsible for the degradation in the breaking strength observed at temperatures above 400 C. The variation in electrical resistivity of the fibers with increasing temperature indicates a transition to a higher band gap material at 350 to 600 C. This is consistent with a decomposition of SiC involving silicon oxide formation.

Effect of abrasive grit size on wear of manganese-zinc ferrite under three-body abrasion

NASA Technical Reports Server (NTRS)

Miyoshi, Kazuhisa

1987-01-01

Wear experiments were conducted using replication electron microscopy and reflection electron diffraction to study abrasion and deformed layers produced in single-crystal Mn-Zn ferrites under three-body abrasion. The abrasion mechanism of Mn-Zn ferrite changes drastically with the size of abrasive grits. With 15-micron (1000-mesh) SiC grits, abrasion of Mn-Zn ferrite is due principally to brittle fracture; while with 4- and 2-micron (4000- and 6000-mesh) SiC grits, abrasion is due to plastic deformation and fracture. Both microcracking and plastic flow produce polycrystalline states on the wear surfaces of single-crystal Mn-Zn ferrites. Coefficient of wear, total thickness of the deformed layers, and surface roughness of the wear surfaces increase markedly with an increase in abrasive grit size. The total thicknesses of the deformed layers are 3 microns for the ferrite abraded by 15-micron SiC, 0.9 microns for the ferrite abraded by 4-micron SiC, and 0.8 microns for the ferrite abraded by 1-micron SiC.

Molecular column densities in selected model atmospheres. [chemical analysis of carbon stars

NASA Technical Reports Server (NTRS)

Johnson, H. R.; Beebe, R. F.; Sneden, C.

1974-01-01

From an examination of predicted column densities, the following conclusions were drawn: (1) The SiO ought to be visible in carbon stars which were generated from triple alpha burning, but absent from carbon stars generated from the CNO bi-cycle. (2) Variation in the observed relative strengths of TiO and ZrO is indicative of real differences in the ratio Ti/Zr. (3) The TiO/ZrO ratio shows a small variation as C/O and effective temperature is changed. (4) Column density of silicon dicarbide (SiC2) is sensitive to abundance, temperature, and gravity; hence all relationships between the strength of SiC2 and other stellar parameters will show appreciable scatter. There is however, a substantial luminosity effect present in the SiC2 column densities. (5) Unexpectedly, SiC2 is anti-correlated with C2. (6) The presence of SiC2 in a carbon star eliminates the possibility of these stars having temperatures greater than or equal to 3000 K, or being produced through the CNO bi-cycle.

Morphological and Wear behaviour of new Al-SiCmicro-SiCnano hybrid nanocomposites fabricated through powder metallurgy

NASA Astrophysics Data System (ADS)

Arif, Sajjad; Tanwir Alam, Md; Aziz, Tariq; Ansari, Akhter H.

2018-04-01

In the present work, aluminium matrix composites reinforced with 10 wt% SiC micro particles along with x% SiC nano particles (x = 0, 1, 3, 5 and 7 wt%) were fabricated through powder metallurgy. The fabricated hybrid composites were characterized by x-ray diffractometer (XRD), scanning electron microscope (SEM), energy dispersive spectrum (EDS) and elemental mapping. The relative density, hardness and wear behaviour of all hybrid nanocomposites were studied. The influence of various control factors like SiC reinforcement, sliding distance (300, 600, 900 and 1200 m) and applied load (20, 30 and 40 N) were explored using pin-on-disc wear apparatus. The uniform distribution of micro and nano SiC particles in aluminium matrix is confirmed by elemental maps. The hardness and wear test results showed that properties of the hybrid composite containing 5 wt% nano SiC was better than other hybrid composites. Additionally, the wear loss of all hybrid nanocomposites increases with increasing sliding distance and applied load. The identification of wear phenomenon were studied through the SEM images of worn surface.

Mechanical property degradation of high crystalline SiC fiber–reinforced SiC matrix composite neutron irradiated to ~100 displacements per atom

DOE PAGES

Koyanagi, Takaaki; Nozawa, Takashi; Katoh, Yutai; ...

2017-12-20

For the development of silicon carbide (SiC) materials for next-generation nuclear structural applications, degradation of material properties under intense neutron irradiation is a critical feasibility issue. This paper evaluated the mechanical properties and microstructure of a chemical vapor infiltrated SiC matrix composite, reinforced with a multi-layer SiC/pyrolytic carbon–coated Hi-Nicalon TM Type S SiC fiber, following neutron irradiation at 319 and 629 °C to ~100 displacements per atom. Both the proportional limit stress and ultimate flexural strength were significantly degraded as a result of irradiation at both temperatures. After irradiation at 319 °C, the quasi-ductile fracture behavior of the nonirradiated compositemore » became brittle, a result that was explained by a loss of functionality of the fiber/matrix interface associated with the disappearance of the interphase due to irradiation. Finally, the specimens irradiated at 629 °C showed increased apparent failure strain because the fiber/matrix interphase was weakened by irradiation-induced partial debonding.« less

Microstructural and strength stability of a developmental CVD SiC fiber

NASA Technical Reports Server (NTRS)

Bhatt, Ramakrishna T.; Garg, Anita; Hull, David R.

1995-01-01

The effects of thermal exposure on the room temperature tensile strength and microstructure of a developmental 50 micron CVD SiC fiber have been studied. The fibers were heat treated between 600 and 2000 C in 0.1 MPa argon and air environments for up to 100 hr. In the as-fabricated condition, the fibers showed approximately 6 GPa tensile strength. After argon treatment, the fibers showed strength degradation after 1 hr exposure beyond 1000 C, but those exposed between 1600 and 2000 C retained approximately 2 GPa strength. TEM results showed microstructural changes both in the surface coating and SiC sheath. Flaws created by the rearrangement of carbon in the surface coating and growth of equiaxed SiC grain zone in the SiC sheath are the suggested mechanisms of strength degradation. After air treatment, fibers showed strength degradation after only 2 min exposure at 600 C. Strength retention after 2 min at 1500 C was approximately 2 GPa. Oxidation of the surface coating is the primary reason for strength degradation.

Positron annihilation spectroscopy investigation of vacancy defects in neutron-irradiated 3 C -SiC

DOE PAGES

Hu, Xunxiang; Koyanagi, Takaaki; Katoh, Yutai; ...

2017-03-10

We described positron annihilation spectroscopy characterization results for neutron-irradiated 3 C -SiC, with a specific focus on explaining the size and character of vacancy clusters as a complement to the current understanding of the neutron irradiation response of 3 C -SiC. Positron annihilation lifetime spectroscopy was used to capture the irradiation temperature and dose dependence of vacancy defects in 3 C -SiC following neutron irradiation from 0.01 to 31 dpa in the temperature range from 380C °to 790C .° The neutral and negatively charged vacancy clusters were identified and quantified. The results suggest that the vacancy defects that were measuredmore » by positron annihilation spectroscopy technique contribute very little to the transient swelling of SiC. Additionally, we used coincidence Doppler broadening measurement to investigate the chemical identity surrounding the positron trapping sites.Finally, we found that silicon vacancy-related defects dominate in the studied materials and the production of the antisite defect C Si may result in an increase in the probability of positron annihilation with silicon core electrons.« less

Tweens feel the burn: "salt and ice challenge" burns.

PubMed

Roussel, Lauren O; Bell, Derek E

2016-05-01

To review our institution's experience with frostbite injury secondary to "salt and ice challenge" (SIC) participation. We conducted a retrospective analysis of intentional freezing burns from 2012 to 2014. Demographics, depth and location of burn, total body surface area of burn, treatment, time to wound healing, length of stay, complications, and motives behind participation were analyzed. Five patients were seen in the emergency department for intentional freezing burns that resulted from SIC (all females; mean age: 12.3 years; range age: 10.0-13.2 years). Mean total body surface area was 0.408%. Salt and ice was in contact with skin for >10 min for two patients, >20 min for two patients, and an unknown duration for one patient. Complications included pain and burn scar dyschromia. Four patients cited peer pressure and desire to replicate SIC as seen on the Internet as their motivation in attempting the challenge. SIC has become a popular, self-harming behavior among youths. Increased public education, and provider and parent awareness of SIC are essential to address this public health concern.

Costs of occupational injuries in construction in the United States.

PubMed

Waehrer, Geetha M; Dong, Xiuwen S; Miller, Ted; Haile, Elizabeth; Men, Yurong

2007-11-01

This paper presents costs of fatal and nonfatal injuries for the construction industry using 2002 national incidence data from the Bureau of Labor Statistics and a comprehensive cost model that includes direct medical costs, indirect losses in wage and household productivity, as well as an estimate of the quality of life costs due to injury. Costs are presented at the three-digit industry level, by worker characteristics, and by detailed source and event of injury. The total costs of fatal and nonfatal injuries in the construction industry were estimated at $11.5 billion in 2002, 15% of the costs for all private industry. The average cost per case of fatal or nonfatal injury is $27,000 in construction, almost double the per-case cost of $15,000 for all industry in 2002. Five industries accounted for over half the industry's total fatal and nonfatal injury costs. They were miscellaneous special trade contractors (SIC 179), followed by plumbing, heating and air-conditioning (SIC 171), electrical work (SIC 173), heavy construction except highway (SIC 162), and residential building construction (SIC 152), each with over $1 billion in costs.

Theoretical investigation of the breakdown electric field of SiC polymorphs

NASA Astrophysics Data System (ADS)

Yamaguchi, Kikou; Kobayashi, Daisuke; Yamamoto, Tomoyuki; Hirose, Kazuyuki

2018-03-01

The breakdown electric field of several SiC polymorphs has been investigated theoretically using a concept of "recovery rate," which is obtained by first principles calculations. A good relationship between the experimental breakdown electric fields and the calculated recovery rate of 4H-, 6H-, and 3C-SiC was obtained. In order to examine the stability of SiC polymorphs, the total electronic energies of various types of SiC crystal structures were calculated. Here, two candidates of polymorphs-GeS-type- and 2H-SiC-with energies comparable to those of experimentally well-established structures, have been obtained. The breakdown electric fields of these two polymorphs were estimated using a relationship obtained from the results of 4H-, 6H-, and 3C-SiC. This indicates that one of these polymorphs, GeS-type-SiC, has higher breakdown electric field than any other SiC polymorphs. In addition to the investigation with the recovery rate, relationship between experimental breakdown electric field and calculated band gap with recently developed accurate electron-correlation potential has been also discussed.

SiC (SCS-6) Fiber Reinforced-Reaction Formed SiC Matrix Composites: Microstructure and Interfacial Properties

NASA Technical Reports Server (NTRS)

Singh, M.; Dickerson, R. M.; Olmstead, Forrest A.; Eldridge, J. I.

1997-01-01

Microstructural and interfacial characterization of unidirectional SiC (SCS-6) fiber reinforced-reaction formed SiC (RFSC) composites has been carried out. Silicon-1.7 at.% molybdenum alloy was used as the melt infiltrant, instead of pure silicon, to reduce the activity of silicon in the melt as well as to reduce the amount of free silicon in the matrix. Electron microprobe analysis was used to evaluate the microstructure and phase distribution in these composites. The matrix is SiC with a bi-modal grain-size distribution and small amounts of MoSi2, silicon, and carbon. Fiber push-outs tests on these composites showed that a desirably low interfacial shear strength was achieved. The average debond shear stress at room temperature varied with specimen thickness from 29 to 64 MPa, with higher values observed for thinner specimens. Initial frictional sliding stresses showed little thickness dependence with values generally close to 30 MPa. Push-out test results showed very little change when the test temperature was increased to 800 C from room temperature, indicating an absence of significant residual stresses in the composite.

Nanocatalytic growth of Si nanowires from Ni silicate coated SiC nanoparticles on Si solar cell.

PubMed

Parida, Bhaskar; Choi, Jaeho; Ji, Hyung Yong; Park, Seungil; Lim, Gyoungho; Kim, Keunjoo

2013-09-01

We investigated the nanocatalytic growth of Si nanowires on the microtextured surface of crystalline Si solar cell. 3C-SiC nanoparticles have been used as the base for formation of Ni silicate layer in a catalytic reaction with the Si melt under H2 atmosphere at an annealing temperature of 1100 degrees C. The 10-nm thick Ni film was deposited after the SiC nanoparticles were coated on the microtextured surface of the Si solar cell by electron-beam evaporation. SiC nanoparticles form a eutectic alloy surface of Ni silicate and provide the base for Si supersaturation as well as the Ni-Si alloy layer on Si substrate surface. This bottom reaction mode for the solid-liquid-solid growth mechanism using a SiC nanoparticle base provides more stable growth of nanowires than the top reaction mode growth mechanism in the absence of SiC nanoparticles. Thermally excited Ni nanoparticle forms the eutectic alloy and provides collectively excited electrons at the alloy surface, which reduces the activation energy of the nanocatalytic reaction for formation of nanowires.

Electron microscopy study of Pd, Ag, and Cs in carbon areas in the locally corroded SiC layer in a neutron-irradiated TRISO fuel particle

DOE PAGES

Wen, Haiming; van Rooyen, Isabella J.; Hunn, John D.; ...

2018-05-07

Here, a detailed electron microscopy study was performed on focused ion beam-prepared lamellae from different locations relative to a crack across the inner pyrolytic carbon layer of a neutron-irradiated tristructural isotropic-coated particle. The distribution and composition of fission products across the inner pyrolytic carbon and silicon carbide (SiC) layers were studied. Previously, this crack was identified in the particle that released significant inventory fractions of cesium and silver during irradiation and displayed localized palladium pileup with SiC degradation. In this study, carbon areas were found in the SiC layer close to the crack tip and they had precipitates that consistedmore » mostly of palladium silicides or palladium, with silver and/or cadmium frequently identified. Results confirmed that areas in the SiC layer close to the crack tip with localized accumulation of palladium were corroded by palladium, forming pure carbon areas and palladium silicide that provided pathways for silver, cadmium and cesium migration.« less

Mechanical property degradation of high crystalline SiC fiber–reinforced SiC matrix composite neutron irradiated to ~100 displacements per atom

DOE Office of Scientific and Technical Information (OSTI.GOV)

Koyanagi, Takaaki; Nozawa, Takashi; Katoh, Yutai

For the development of silicon carbide (SiC) materials for next-generation nuclear structural applications, degradation of material properties under intense neutron irradiation is a critical feasibility issue. This paper evaluated the mechanical properties and microstructure of a chemical vapor infiltrated SiC matrix composite, reinforced with a multi-layer SiC/pyrolytic carbon–coated Hi-Nicalon TM Type S SiC fiber, following neutron irradiation at 319 and 629 °C to ~100 displacements per atom. Both the proportional limit stress and ultimate flexural strength were significantly degraded as a result of irradiation at both temperatures. After irradiation at 319 °C, the quasi-ductile fracture behavior of the nonirradiated compositemore » became brittle, a result that was explained by a loss of functionality of the fiber/matrix interface associated with the disappearance of the interphase due to irradiation. Finally, the specimens irradiated at 629 °C showed increased apparent failure strain because the fiber/matrix interphase was weakened by irradiation-induced partial debonding.« less

Soil Carbon Cycling - More than Changes in Soil Organic Carbon Stocks

NASA Astrophysics Data System (ADS)

Lorenz, K.

2015-12-01

Discussions about soil carbon (C) sequestration generally focus on changes in soil organic carbon (SOC) stocks. Global SOC mass in the top 1 m was estimated at about 1325 Pg C, and at about 3000 Pg C when deeper soil layers were included. However, both inorganically and organically bound carbon forms are found in soil but estimates on global soil inorganic carbon (SIC) mass are even more uncertain than those for SOC. Globally, about 947 Pg SIC may be stored in the top 1 m, and especially in arid and semi-arid regions SIC stocks can be many times great than SOC stocks. Both SIC and SOC stocks are vulnerable to management practices, and stocks may be enhanced, for example, by optimizing net primary production (NPP) by fertilization and irrigation (especially optimizing belowground NPP for enhancing SOC stocks), adding organic matter (including black C for enhancing SOC stocks), and reducing soil disturbance. Thus, studies on soil C stocks, fluxes, and vulnerability must look at both SIC and SOC stocks in soil profiles to address large scale soil C cycling.

Two Highly-Complementary Future Instruments for Climate Studies

NASA Astrophysics Data System (ADS)

Kopp, Greg; Pilewskie, Peter

2017-04-01

Measurements of the total solar irradiance (TSI) provide the most accurate knowledge of the net energy powering the Earth's climate system and thus give the incoming side of the Earth's radiative energy balance. The spectral distribution of this radiant energy, the spectral solar irradiance (SSI), determines how that incoming energy interacts with different components of the Earth's coupled ocean-atmosphere-surface climate system. Spatially- and spectrally-resolved Earth-reflected measurements of this shortwave radiation indicate the relative amount of the incident sunlight that is absorbed by different spatial regions and ecosystems around the globe. Particularly if very accurate and acquired over sufficiently long periods of time, those outgoing radiance measurements can lead to improved quantification of and physical understandings of the local and global processes causing climate change. Two upcoming and very complementary missions provide these measurements. The soon-to-be-launched Total and Spectral Solar Irradiance Sensor (TSIS) acquires the solar-irradiance measurements, with the Total Irradiance Monitor (TIM) providing highly-accurate values of the TSI and the Spectral Irradiance Monitor (SIM) measuring the SSI. The recently-selected CLARREO Pathfinder (CPF) is a technology-demonstration mission that measures the solar-reflected radiation via spatially- and spectrally-resolved observations of Earth scenes from its HyperSpectral Imager for Climate Science (HySICS), a spaceflight version of a high-altitude balloon-flight imaging spectrometer that achieves high radiometric accuracies via in-flight cross-calibrations directly tied to the SSI. We give an overview of the TSIS and the CPF, describing their instruments, the high complementarity of their measurements and intended uncertainties, and their planned timelines and current status.

Optimal base station placement for wireless sensor networks with successive interference cancellation.

PubMed

Shi, Lei; Zhang, Jianjun; Shi, Yi; Ding, Xu; Wei, Zhenchun

2015-01-14

We consider the base station placement problem for wireless sensor networks with successive interference cancellation (SIC) to improve throughput. We build a mathematical model for SIC. Although this model cannot be solved directly, it enables us to identify a necessary condition for SIC on distances from sensor nodes to the base station. Based on this relationship, we propose to divide the feasible region of the base station into small pieces and choose a point within each piece for base station placement. The point with the largest throughput is identified as the solution. The complexity of this algorithm is polynomial. Simulation results show that this algorithm can achieve about 25% improvement compared with the case that the base station is placed at the center of the network coverage area when using SIC.

Microporous layer based on SiC for high temperature proton exchange membrane fuel cells

NASA Astrophysics Data System (ADS)

Lobato, Justo; Zamora, Héctor; Cañizares, Pablo; Plaza, Jorge; Rodrigo, Manuel Andrés

2015-08-01

This work reports the evaluation of Silicon Carbide (SiC) for its application in microporous layers (MPL) of HT-PEMFC electrodes and compares results with those obtained using conventional MPL based on Vulcan XC72. Influence of the support load on the MPL prepared with SiC was evaluated, and the MPL were characterized by XRD, Hg porosimetry and cyclic voltammetries. In addition, a short lifetest was carried out to evaluate performance in accelerated stress conditions. Results demonstrate that SiC is a promising alternative to carbonaceous materials because of its higher electrochemical and thermal stability and the positive effect on mass transfer associated to its different pore size distribution. Ohmic resistance is the most significant challenge to be overcome in further studies.

Stored energy in irradiated silicon carbide

DOE Office of Scientific and Technical Information (OSTI.GOV)

Snead, L.L.; Burchell, T.D.

1997-04-01

This report presents a short review of the phenomenon of Wigner stored energy release from irradiated graphite and discusses it in relation to neutron irradiation of silicon carbide. A single published work in the area of stored energy release in SiC is reviewed and the results are discussed. It appears from this previous work that because the combination of the comparatively high specific heat of SiC and distribution in activation energies for recombining defects, the stored energy release of SiC should only be a problem at temperatures lower than those considered for fusion devices. The conclusion of this preliminary reviewmore » is that the stored energy release in SiC will not be sufficient to cause catastrophic heating in fusion reactor components, though further study would be desirable.« less

Selective growth of Pb islands on graphene/SiC buffer layers

DOE Office of Scientific and Technical Information (OSTI.GOV)

Liu, X. T.; Miao, Y. P.; Ma, D. Y.

2015-02-14

Graphene is fabricated by thermal decomposition of silicon carbide (SiC) and Pb islands are deposited by Pb flux in molecular beam epitaxy chamber. It is found that graphene domains and SiC buffer layer coexist. Selective growth of Pb islands on SiC buffer layer rather than on graphene domains is observed. It can be ascribed to the higher adsorption energy of Pb atoms on the 6√(3) reconstruction of SiC. However, once Pb islands nucleate on graphene domains, they will grow very large owing to the lower diffusion barrier of Pb atoms on graphene. The results are consistent with first-principle calculations. Sincemore » Pb atoms on graphene are nearly free-standing, Pb islands grow in even-number mode.« less

Methods for growth of relatively large step-free SiC crystal surfaces

NASA Technical Reports Server (NTRS)

Neudeck, Philip G. (Inventor); Powell, J. Anthony (Inventor)

2002-01-01

A method for growing arrays of large-area device-size films of step-free (i.e., atomically flat) SiC surfaces for semiconductor electronic device applications is disclosed. This method utilizes a lateral growth process that better overcomes the effect of extended defects in the seed crystal substrate that limited the obtainable step-free area achievable by prior art processes. The step-free SiC surface is particularly suited for the heteroepitaxial growth of 3C (cubic) SiC, AlN, and GaN films used for the fabrication of both surface-sensitive devices (i.e., surface channel field effect transistors such as HEMT's and MOSFET's) as well as high-electric field devices (pn diodes and other solid-state power switching devices) that are sensitive to extended crystal defects.

Strength improvement and purification of Yb 2Si 2O 7-SiC nanocomposites by surface oxidation treatment

DOE PAGES

Nguyen, Son T.; Nakayama, Tadachika; Suematsu, Hisayuki; ...

2017-04-03

A two-step processing was developed to prepare Yb 2Si 2O 7-SiC nanocomposites. Yb 2Si 2O 7-Yb 2SiO 5-SiC composites were first fabricated by a solid state reaction/hot-pressing method. The composites were then annealed at 1250°C in air for 2 h to activate the oxidation of SiC, which effectively transformed the Yb 2SiO 5 into Yb 2Si 2O 7. The surface cracks purposely induced can be fully healed during the oxidation treatment. The treated composites have improved flexural strength compared to their pristine composites. As a result, the mechanism for crack-healing and silicate transformation have been proposed and discussed in detail.

Theoretical study of band gap in CuAlO2: Pressure dependence and self-interaction correction

NASA Astrophysics Data System (ADS)

Nakanishi, Akitaka; Katayama-Yoshida, Hiroshi

2012-08-01

By using first-principles calculations, we studied the energy gaps of delafossite CuAlO2: (1) pressure dependence and (2) self-interaction correction (SIC). Our simulation shows that CuAlO2 transforms from a delafossite structure to a leaning delafossite structure at 60 GPa. The energy gap of CuAlO2 increases through the structural transition due to the enhanced covalency of Cu 3d and O 2p states. We implemented a self-interaction correction (SIC) into first-principles calculation code to go beyond local density approximation and applied it to CuAlO2. The energy gap calculated within the SIC is close to experimental data while one calculated without the SIC is about 1 eV smaller than the experimental data.

Men Working on Mock-Up of S-IC Thrust Structure

NASA Technical Reports Server (NTRS)

1963-01-01

This photograph depicts Marshall Space Flight Center employees, James Reagin, machinist (top); Floyd McGinnis, machinist; and Ernest Davis, experimental test mechanic (foreground), working on a mock up of the S-IC thrust structure. The S-IC stage is the first stage, or booster, of the 364-foot long Saturn V rocket that ultimately took astronauts to the Moon. The S-IC stage, burned over 15 tons of propellant per second during its 2.5 minutes of operation to take the vehicle to a height of about 36 miles and to a speed of about 6,000 miles per hour. The stage was 138 feet long and 33 feet in diameter. Operating at maximum power, all five of the engines produced 7,500,000 pounds of thrust.

The Oxidation Rate of SiC in High Pressure Water Vapor Environments

NASA Technical Reports Server (NTRS)

Opila, Elizabeth J.; Robinson, R. Craig

1999-01-01

CVD SiC and sintered alpha-SiC samples were exposed at 1316 C in a high pressure burner rig at total pressures of 5.7, 15, and 25 atm for times up to 100h. Variations in sample emittance for the first nine hours of exposure were used to determine the thickness of the silica scale as a function of time. After accounting for volatility of silica in water vapor, the parabolic rate constants for Sic in water vapor pressures of 0.7, 1.8 and 3.1 atm were determined. The dependence of the parabolic rate constant on the water vapor pressure yielded a power law exponent of one. Silica growth on Sic is therefore limited by transport of molecular water vapor through the silica scale.

Silicon Carbide Epitaxial Films Studied by Atomic Force Microscopy

NASA Technical Reports Server (NTRS)

1996-01-01

Silicon carbide (SiC) holds great potential as an electronic material because of its wide band gap energy, high breakdown electric field, thermal stability, and resistance to radiation damage. Possible aerospace applications of high-temperature, high-power, or high-radiation SiC electronic devices include sensors, control electronics, and power electronics that can operate at temperatures up to 600 C and beyond. Commercially available SiC devices now include blue light-emitting diodes (LED's) and high-voltage diodes for operation up to 350 C, with other devices under development. At present, morphological defects in epitaxially grown SiC films limit their use in device applications. Research geared toward reducing the number of structural inhomogeneities can benefit from an understanding of the type and nature of problems that cause defects. The Atomic Force Microscope (AFM) has proven to be a useful tool in characterizing defects present on the surface of SiC epitaxial films. The in-house High-Temperature Integrated Electronics and Sensors (HTIES) Program at the NASA Lewis Research Center not only extended the dopant concentration range achievable in epitaxial SiC films, but it reduced the concentration of some types of defects. Advanced structural characterization using the AFM was warranted to identify the type and structure of the remaining film defects and morphological inhomogeneities. The AFM can give quantitative information on surface topography down to molecular scales. Acquired, in part, in support of the Advanced High Temperature Engine Materials Technology Program (HITEMP), the AFM had been used previously to detect partial fiber debonding in composite material cross sections. Atomic force microscopy examination of epitaxial SiC film surfaces revealed molecular-scale details of some unwanted surface features. Growth pits propagating from defects in the substrate, and hillocks due, presumably, to existing screw dislocations in the substrates, were imaged. Away from local defects, step bunching was observed to yield step heights of hundreds of angstroms, with possible implications for the uniformity of dopants incorporated in SiC devices during fabrication. The quantitative topographic data from the AFM allow the relevant defect information to be extracted, such as the size and distribution of step bunching and the Burgers vector of screw dislocations. These atomic force microscopy results have furthered the understanding of the dynamic epitaxial SiC growth process. A model describing the observed hillock step bunching has been proposed. This cooperation between researchers involved in crystal growth, electronic device fabrication, and surface structural characterization is likely to continue as atomic force microscopy is used to improve SiC films for high-temperature electronic devices for NASA's advanced turbine engines and space power devices, as well as for future applications in the automotive industry.

Carbothermal synthesis of coatings on silicon carbide fibers

NASA Astrophysics Data System (ADS)

Chen, Linlin

Four kinds of protective coatings---carbide derived carbon (CDC), boron nitride (BN), Al-O-N and BN doped Al-O-N (BAN) have been successfully synthesized on the surface of SiC fibers on the target to enhance the mechanical properties and oxidation resistance of the coated SiC fibers for the application as the reinforcements in the Ceramic Matrix Composites (CMCs) in the high temperatures. First of all, CDC coatings have been uniformly produced on Tyranno ZMI SiC fibers with good thickness control within nanometer accuracy by the chlorination in the temperature range of 550--700°C at atmospheric pressure. Kinetics of the carbon coating growth on the fibers has been systematically studied and thus a good foundation was set up for the further coating synthesis. BN coatings have been synthesized on the surface of SiC powders, fibers and fabrics by a novel carbothermal nitridation method. Non-bridging has been achieved in the BN-coated fiber tows by the nitridation in ammonia at atmospheric pressure in a temperature below 1200°C, which is lower compared to the traditional BN synthesis method and does not cause the degradation of the coated-fibers. BN coatings on the carbon nanotubes have also been formed and unlike the common methods, no additional dopant (such as metal catalyst) is introduced into the system during the BN coatings syntheses, thus the contamination of the final product is avoided. A novel Al-O-N coating has been explored with the most impressive point is that a more than 65% improvement in the tensile strength (up to ˜5.1GPa) and a three-time increase in the Weibull modulus compared to the as-received fibers are resulted by the formation of 200nm Al-O-N coating on the SiC fibers. It exceeds the strength of all other small diameter SiC fibers reported in the literature. Furthermore, BAN coating has also been produced on the surface of SiC fibers and about 20% enhancement in mechanical strength is achieved compared to that of the original fibers. Oxidation experiments of the SiC fibers with four kinds of coatings under 1000°C and 1200°C in air have been carried out and better oxidation resistance of the coated fibers are presented compared to the as-received fibers. In summary, exploration of various coatings synthesis for the SiC fibers has been successfully conducted in this work. The coating material suitable for the SiC fibers should be chosen properly according to its specific application in the CFCCs and well thickness-control to meet the corresponding requirements.

Variation in genome-wide mutation rates within and between human families.

PubMed

Conrad, Donald F; Keebler, Jonathan E M; DePristo, Mark A; Lindsay, Sarah J; Zhang, Yujun; Casals, Ferran; Idaghdour, Youssef; Hartl, Chris L; Torroja, Carlos; Garimella, Kiran V; Zilversmit, Martine; Cartwright, Reed; Rouleau, Guy A; Daly, Mark; Stone, Eric A; Hurles, Matthew E; Awadalla, Philip

2011-06-12

J.B.S. Haldane proposed in 1947 that the male germline may be more mutagenic than the female germline. Diverse studies have supported Haldane's contention of a higher average mutation rate in the male germline in a variety of mammals, including humans. Here we present, to our knowledge, the first direct comparative analysis of male and female germline mutation rates from the complete genome sequences of two parent-offspring trios. Through extensive validation, we identified 49 and 35 germline de novo mutations (DNMs) in two trio offspring, as well as 1,586 non-germline DNMs arising either somatically or in the cell lines from which the DNA was derived. Most strikingly, in one family, we observed that 92% of germline DNMs were from the paternal germline, whereas, in contrast, in the other family, 64% of DNMs were from the maternal germline. These observations suggest considerable variation in mutation rates within and between families.

Ft Nelson, Muskwa Apt, British Columbia, Canada. Revised Uniform Summary of Surface Weather Observations (RUSSWO). Parts A-F.

DTIC Science & Technology

1972-01-17

OBSERVATIONS 930 USAFETAC 0.8.5 (OLI) PRIOIS IDI ’ NS I -II FORTA D 1I ( JBS -I7f DIATA PRIKESSIN ’JVLSIfN FT (./US^, SURFACE WINDS2 L1 E.,T E E’VICE/’C...821719 7 2 , n 79, 9.n 7. e -1-9 /9 0r ."J--%l 4. :j Hh .3 7 7 Soso3 n,, ) A(~ 9).95 8)16 9 . ) 2. 9 .19 , 9, 10 4 U L 21 5 󈨐. td lt 711~ri)~ 79.7 A0.4...85.9 i. 85.3 jb .7 8.7 . 87. 4 87.4 87 . 87,4 87.4 87,4 200 0 .0 tR86 139 1 i. 900() 90 6l I l L ~ 9 ’ U 2000 r 94.~ 00 ! 8. 89]. 9O 90,8 90.9 q.,7 2 2

Single step purification of concanavalin A (Con A) and bio-sugar production from jack bean using glucosylated magnetic nano matrix.

PubMed

Kim, Ho Myeong; Cho, Eun Jin; Bae, Hyeun-Jong

2016-08-01

Jack bean (JB, Canavalia ensiformis) is the source of bio-based products, such as proteins and bio-sugars that contribute to modern molecular biology and biomedical research. In this study, the use of jack bean was evaluated as a source for concanavalin A (Con A) and bio-sugar production. A novel method for purifying Con A from JBs was successfully developed using a glucosylated magnetic nano matrix (GMNM) as a physical support, which facilitated easy separation and purification of Con A. In addition, the enzymatic conversion rate of 2% (w/v) Con A extracted residue to bio-sugar was 98.4%. Therefore, this new approach for the production of Con A and bio-sugar is potentially useful for obtaining bio-based products from jack bean. Copyright © 2016 Elsevier Ltd. All rights reserved.

The meat industry: do we think and behave globally or locally?

PubMed

Belk, K E; Woerner, D R; Delmore, R J; Tatum, J D; Yang, H; Sofos, J N

2014-11-01

For generations, those that produce livestock and meat generally felt that their country or geographical region (i.e., provenance) reflected a basis for product differentiation. This occurs to the extent that geography of production often is considered a "brand." For example, there exists "U.S. Grain-Fed Beef" or "Kobe Black Wagyu" or "Uruguayan Grass-Fed Lamb" or "Danish Pork." However, for most meat trade, industry has evolved beyond this. With the exception perhaps of farms onto which livestock are born, meat company's profits are not generally tied to geographical considerations. Most major companies (e.g., JBS, Marfrig, Tyson, Cargill, Danish Crown, Nippon Meat Packers, etc.) operate in multiple countries and represent to consumers the production of a number of locations. However, there also now exist entrepreneurial options for meat production and "local" sales, albeit at lesser volumes. This discussion explores "global" and "local" meat marketing options. Copyright © 2014. Published by Elsevier Ltd.

Sintering behavior of ultrafine silicon carbide powders obtained by vapor phase reaction

NASA Technical Reports Server (NTRS)

Okabe, Y.; Miyachi, K.; Hojo, J.; Kato, A.

1984-01-01

The sintering behavior of ultrafine SiC powder with average particle size of about 0.01-0.06 microns produced by a vapor phase reaction of the Me4Si-H2 system was studied at the temperature range of 1400-2050 deg. It was found that the homogeneous dispersion of C on SiC particles is important to remove the surface oxide layer effectively. B and C and inhibitive effect on SiC grain growth.

Fiber Coating by Sputtering for High Temperature Composites

DTIC Science & Technology

1992-10-15

reinforced titanium or aluminum alloys and SiC reinforced lithium aluminosilicate glass. The purpose of this research is to identify protective and...including boron [4] or SiC [5] reinforced titanium or aluminum alloys and SiC reinforced lithium aluminosilicate glass [2]. The purpose of this research is...crystal A120 3 fibers -300 Jim in diameter were hot pressed between comm( -ially pure a- titanium sheets -400 pLm thick at 8150 C for 2 hours and 110 MPa

Thermal Management Investigations in Ceramic Thin Disk Lasers

DTIC Science & Technology

2011-01-14

techniques. 10-14mm diameter 0.2mm thick disks are mounted on silicon carbide ( SiC ), sapphire, and diamond submounts. From a larger platform, more than 6kW...along with various cooling techniques. 10-14mm diameter O.2mm thick disks are mounted on silicon carbide ( SiC ), sapphire, and diamond submounts. From a...assemblies are either attached to heat sinks or directly to the Cu W cooling mount, see Fig. I (c) & (d). The heat sinks tested are SiC , sapphire, and

The Impact of GaN/Substrate Thermal Boundary Resistance on a HEMT Device

DTIC Science & Technology

2011-11-01

stack between the GaN and Substrate layers. The University of Bristol recently reported that this TBR in commercial devices on Silicon Carbide ( SiC ...Circuit RF Radio Frequency PA Power Amplifier SiC Silicon Carbide FEA Finite Element Analysis heff Effective Heat transfer Coefficient (W/m 2 K...substrate material switched from sapphire to silicon , and by another factor of two from silicon to SiC . TABLE 1: SAMPLE RESULTS FROM DOUGLAS ET AL. FOR

Low-Temperature Reactivities of Ultra-High Temperature Ceramics (Hf-X System)

DTIC Science & Technology

2005-12-01

as interacting fillers with the preceramic polymer formulations. In situ formation of the SiC phase was also evaluated as a practical approach in...led to a renewal of activities to fabricate MB2/ SiC composites as the materials of choice, because of their high thermal and oxidation resistance...HfB2/ SiC composite microstructures (and also HfC, ZrB2, and ZrC composites ) under pressureless conditions. These can be employed in reactive and

DARPA - Advanced Composite Materials Annual Presentation Held in Gainesville, Florida on 19-20 November 1992

DTIC Science & Technology

1992-11-20

34 and M.D. Sacks 13) "Fabrication of SiC -Based Composites by Reactive Infiltration of Metals (RIM)" K. Wang," G.W. Scheiffele, P.J. Sanchez-Soto, and...Ig I I keactive Infiltration of Metals (RIM) Ii * Densification with little or no shrinkage e SIC -based composites with little or no residual metal...M.D. Sacks I) Indicates Presenter Intermetallic: Matrix Composites 14) *Processing of Compositionally Tailored Silica-Free MoSi 2/ SiC Composites ’ S

Methylhydridopolysilazane and its Pyrolytic Conversion to Si3N4/SiC Ceramics

DTIC Science & Technology

1993-04-20

development of inorganic and organometallic polymers as preceramic materials for the synthesis of silicon carbide ( SiC ) and silicon nitride (Si 3N 4...disproportionation in the pyrolysis of preceramic polymers . The lack of a -50 ppm resonance in the CP-MAS NMR spectra of the MHPS systems is 12...1992); Chem. Abstr. 1992, 116, 220226g. 6. (a) Semen, J.; Loop, J.G., "A Preceramic Polymer Route to Molded SiC Ceramic Parts," Ceram. Eng. Sci. Proc

Innovative Processing of Composites for Ultra-High Temperature Applications. Book 1

DTIC Science & Technology

1993-11-01

pyrolysis step (in which the polymer is converted at higher temperatures to a SiC -rich ceramic). However, curing in air also leads to the high oxygen...The fac’ that the ceramic the vinylic SiC precursor, i.e., a compound or polymer resulting from pyrolysis of the vinylic precursor re- having vinylic...12 %herein said atmosphere 1. A method of preparing preceramic SiC fibers hay- 65 utilized for pyrolysis ik a reactime atmosphere contain- ing a very

Modeling and Simulation of Ceramic Arrays to Improve Ballaistic Performance

DTIC Science & Technology

2013-10-01

are modeled using SPH elements. Model validation runs with monolithic SiC tiles are conducted based on the DoP experiments described in reference...TERMS ,30cal AP M2 Projectile, 762x39 PS Projectile, SPH , Aluminum 5083, SiC, DoP Expeminets, AutoDyn Simulations, Tile Gap 16. SECURITY...range 700 m/s to 1000 m/s are modeled using SPH elements. □ Model validation runs with monolithic SiC tiles are conducted based on the DoP

Asthma related to cleaning agents: a clinical insight

PubMed Central

Vandenplas, Olivier; D'Alpaos, Vinciane; Evrard, Geneviève; Jamart, Jacques; Thimpont, Joel; Huaux, François; Renauld, Jean-Christophe

2013-01-01

Objective To determine the agents causing asthmatic reactions during specific inhalation challenges (SICs) in workers with cleaning-related asthma symptoms and to assess the pattern of bronchial responses in order to identify the mechanisms involved in cleaning-related asthma. Design A retrospective case series analysis. Setting The study included all participants who completed an SIC procedure with the cleaning/disinfection products suspected of causing work-related asthma over the period 1992–2011 in a tertiary centre, which is the single specialised centre of the French-speaking part of Belgium where all participants with work-related asthma are referred to for SIC. Results The review identified 44 participants who completed an SIC with cleaning/disinfection agents. Challenge exposure to the suspected cleaning agents elicited a ≥20% fall in forced expiratory volume in 1 s (FEV1) in 17 (39%) participants. The cleaning products that induced a positive SIC contained quaternary ammonium compounds (n=10), glutaraldehyde (n=3), both of these agents (n=1) and ethanolamines (n=2). Positive SICs were associated with a significant decrease in the median (IQR) value of the provocative concentration of histamine causing a 20% fall in FEV1 (PC20) from 1.4 (0.2–4.2) mg/mL at baseline to 0.5 (0.4–3.0) mg/mL after the challenge and a significant increase in sputum eosinophils from 1.8 (0.8–7.2)% at baseline to 10.0 (4.1–15.9)% 7 h after the challenge exposure while these parameters did not significantly change in participants with a negative SIC. Overall, 11 of 17 participants with positive SICs showed greater than threefold decrease in postchallenge histamine PC20 value, a >2% increase in sputum eosinophils, or both of these outcomes. Conclusions These data indicate that a substantial proportion of workers who experience asthma symptoms related to cleaning materials show a pattern of bronchial reaction consistent with sensitiser-induced occupational asthma. The results also suggest that quaternary ammonium compounds are the principal cause of sensitiser-induced occupational asthma among cleaners. PMID:24056489

Silicon Carbide High-Temperature Power Rectifiers Fabricated and Characterized

NASA Technical Reports Server (NTRS)

1996-01-01

The High Temperature Integrated Electronics and Sensors (HTIES) team at the NASA Lewis Research Center is developing silicon carbide (SiC) for use in harsh conditions where silicon, the semiconductor used in nearly all of today's electronics, cannot function. Silicon carbide's demonstrated ability to function under extreme high-temperature, high power, and/or high-radiation conditions will enable significant improvements to a far ranging variety of applications and systems. These improvements range from improved high-voltage switching for energy savings in public electric power distribution and electric vehicles, to more powerful microwave electronics for radar and cellular communications, to sensors and controls for cleaner-burning, more fuel-efficient jet aircraft and automobile engines. In the case of jet engines, uncooled operation of 300 to 600 C SiC power actuator electronics mounted in key high-temperature areas would greatly enhance system performance and reliability. Because silicon cannot function at these elevated temperatures, the semiconductor device circuit components must be made of SiC. Lewis' HTIES group recently fabricated and characterized high-temperature SiC rectifier diodes whose record-breaking characteristics represent significant progress toward the realization of advanced high-temperature actuator control circuits. The first figure illustrates the 600 C probe-testing of a Lewis SiC pn-junction rectifier diode sitting on top of a glowing red-hot heating element. The second figure shows the current-versus voltage rectifying characteristics recorded at 600 C. At this high temperature, the diodes were able to "turn-on" to conduct 4 A of current when forward biased, and yet block the flow of current ($quot;turn-off") when reverse biases as high as 150 V were applied. This device represents a new record for semiconductor device operation, in that no previous semiconductor electronic device has ever simultaneously demonstrated 600 C functionality, and 4-A turn-on and 150-V rectification. The high operating current was achieved despite severe device size limitations imposed by present-day SiC wafer defect densities. Further substantial increases in device performance can be expected when SiC wafer defect densities decrease as SiC wafer production technology matures.

Associations of Pd, U and Ag in the SiC layer of neutron-irradiated TRISO fuel

DOE Office of Scientific and Technical Information (OSTI.GOV)

Lillo, Thomas; Rooyen, Isabella Van

2015-05-01

Knowledge of the associations and composition of fission products in the neutron irradiated SiC layer of high-temperature gas reactor TRISO fuel is important to the understanding of various aspects of fuel performance that presently are not well understood. Recently, advanced characterization techniques have been used to examine fuel particles from the Idaho National Laboratory’s AGR-1 experiment. Nano-sized Ag and Pd precipitates were previously identified in grain boundaries and triple points in the SiC layer of irradiated TRISO nuclear fuel. Continuation of this initial research is reported in this paper and consists of the characterization of a relatively large number ofmore » nano-sized precipitates in three areas of the SiC layer of a single irradiated TRISO nuclear fuel particle using standardless EDS analysis on focused ion beam-prepared transmission electron microscopy samples. Composition and distribution analyses of these precipitates, which were located on grain boundaries, triple junctions and intragranular precipitates, revealed low levels, generally <10 atomic %, of palladium, silver and/or uranium with palladium being the most common element found. Palladium by itself, or associated with either silver or uranium, was found throughout the SiC layer. A small number of precipitates on grain boundaries and triple junctions were found to contain only silver or silver in association with palladium while uranium was always associated with palladium but never found by itself or in association with silver. Intergranular precipitates containing uranium were found to have migrated ~23 μm along a radial direction through the 35 μm thick SiC coating during the AGR-1 experiment while silver-containing intergranular precipitates were found at depths up to ~24 μm in the SiC layer. Also, Pd-rich, nano-precipitates (~10 nm in diameter), without evidence for the presence of either Ag or U, were revealed in intragranular regions throughout the SiC layer. Because not all grain boundaries and triple junctions contained precipitates with fission products and/or uranium, along with the differences in migration behavior between Pd, Ag and U, it was concluded that crystallographic grain boundary and triple junction parameters likely influence migration behavior.« less

40 CFR 414.30 - Applicability; description of the other fibers subcategory.

Code of Federal Regulations, 2010 CFR

2010-07-01

... (CONTINUED) EFFLUENT GUIDELINES AND STANDARDS ORGANIC CHEMICALS, PLASTICS, AND SYNTHETIC FIBERS Other Fibers... SIC 2823 cellulosic man-made fibers, except Rayon, and SIC 2824 synthetic organic fibers including...

40 CFR 414.30 - Applicability; description of the other fibers subcategory.

Code of Federal Regulations, 2011 CFR

2011-07-01

... (CONTINUED) EFFLUENT GUIDELINES AND STANDARDS ORGANIC CHEMICALS, PLASTICS, AND SYNTHETIC FIBERS Other Fibers... SIC 2823 cellulosic man-made fibers, except Rayon, and SIC 2824 synthetic organic fibers including...

40 CFR 414.30 - Applicability; description of the other fibers subcategory.

Code of Federal Regulations, 2013 CFR

2013-07-01

... (CONTINUED) EFFLUENT GUIDELINES AND STANDARDS ORGANIC CHEMICALS, PLASTICS, AND SYNTHETIC FIBERS Other Fibers... SIC 2823 cellulosic man-made fibers, except Rayon, and SIC 2824 synthetic organic fibers including...

40 CFR 414.30 - Applicability; description of the other fibers subcategory.

Code of Federal Regulations, 2014 CFR

2014-07-01

... (CONTINUED) EFFLUENT GUIDELINES AND STANDARDS ORGANIC CHEMICALS, PLASTICS, AND SYNTHETIC FIBERS Other Fibers... SIC 2823 cellulosic man-made fibers, except Rayon, and SIC 2824 synthetic organic fibers including...

40 CFR 414.30 - Applicability; description of the other fibers subcategory.

Code of Federal Regulations, 2012 CFR

2012-07-01

... AGENCY (CONTINUED) EFFLUENT GUIDELINES AND STANDARDS ORGANIC CHEMICALS, PLASTICS, AND SYNTHETIC FIBERS... classified under SIC 2823 cellulosic man-made fibers, except Rayon, and SIC 2824 synthetic organic fibers...

Optimal Base Station Placement for Wireless Sensor Networks with Successive Interference Cancellation

PubMed Central

Shi, Lei; Zhang, Jianjun; Shi, Yi; Ding, Xu; Wei, Zhenchun

2015-01-01

We consider the base station placement problem for wireless sensor networks with successive interference cancellation (SIC) to improve throughput. We build a mathematical model for SIC. Although this model cannot be solved directly, it enables us to identify a necessary condition for SIC on distances from sensor nodes to the base station. Based on this relationship, we propose to divide the feasible region of the base station into small pieces and choose a point within each piece for base station placement. The point with the largest throughput is identified as the solution. The complexity of this algorithm is polynomial. Simulation results show that this algorithm can achieve about 25% improvement compared with the case that the base station is placed at the center of the network coverage area when using SIC. PMID:25594600

A test for interfacial effects and stress transfer in ceramic matrix composites

NASA Technical Reports Server (NTRS)

1988-01-01

A test specimen was devised for measuring stress transfer between a high modulus fiber and a ceramic matrix. Single filaments of SiC were embedded in chemically vapor deposited SiC on a thin plate of molybdenum. The CVD overcoating which encapsulated the fiber was continuous with a coating of SiC on the molybdenum. When placed in a microtensile test device and loaded in the fiber direction, the fiber fracture characteristics provide information on the fiber/matrix adhesion and stress transfer. Problems were encountered due to the formation of a weak boundary between the SiC and the molybdenum which obviated any meaningful tensile tests. Also, the high CVD temperature used in fabricating these specimens restrict the fiber, matrix (and substrate) to materials having similar thermal coefficients of expansion in order to minimize thermal stresses.

Large-scale uniform bilayer graphene prepared by vacuum graphitization of 6H-SiC(0001) substrates

NASA Astrophysics Data System (ADS)

Wang, Qingyan; Zhang, Wenhao; Wang, Lili; He, Ke; Ma, Xucun; Xue, Qikun

2013-03-01

We report on the preparation of large-scale uniform bilayer graphenes on nominally flat Si-polar 6H-SiC(0001) substrates by flash annealing in ultrahigh vacuum. The resulting graphenes have a single thickness of one bilayer and consist of regular terraces separated by the triple SiC bilayer steps on the 6H-SiC(0001) substrates. In situ scanning tunneling microscopy reveals that suppression of pit formation on terraces and uniformity of SiC decomposition at step edges are the key factors to the uniform thickness. By studying the surface morphologies prepared under different annealing rates, it is found that the annealing rate is directly related to SiC decomposition, diffusion of the released Si/C atoms and strain relaxation, which together determine the final step structure and density of defects.

Health hazard evaluation report HETA 80-008-1546, BASF Wyandotte Corporation, Rensselaer, New York

DOE Office of Scientific and Technical Information (OSTI.GOV)

Gordon, J.E.; Taylor, P.; Hearn, S.

A health hazard evaluation at BASF Wyandotte Corporation (SIC-2810, SIC-2820, SIC-2880, SIC-2870), Rensselaer, New York was conducted. The evaluation was requested by a union representative because of adverse pregnancy outcomes among workers involved in the manufacture of 3,5-dinitro-N-4N-4-dipropylsulfanilamide (19044883) (oryzalin). All persons employed from January 1, 1972 through December 31, 1980 were identified from company records. Birth, fetal, and death records were obtained from the State of New York. The authors conclude that workers who were involved in manufacturing oryzalin sired offspring having an unusual cluster of birth defects, especially those of the heart. Whether these were the result ofmore » occupational exposure cannot be decisively determined. Implementing proper engineering and work practice controls is recommended.« less

KSC-2009-2433

NASA Image and Video Library

2009-03-30

CAPE CANAVERAL, Fla. – In the Payload Hazardous Servicing Facility at NASA's Kennedy Space Center in Florida, the Science Instrument Command and Data Handling Unit, or SIC&DH, is moved into a clean area. The SIC&DH will be installed on the Hubble Space Telescope during space shuttle Atlantis' STS-125 mission, replacing the one that suffered a failure aboard the orbiting telescope on Sept. 27, 2008. The SIC&DH is being prepared for integration onto the Multi-Use Lightweight Equipment Carrier. The SIC&DH will be installed on the Hubble Space Telescope during space shuttle Atlantis' STS-125 mission, replacing one that suffered a failure aboard the orbiting telescope on Sept. 27, 2008. The carrier holds the payload for space shuttle Atlantis' STS-125 mission servicing NASA's Hubble Space Telescope, targeted to launch May 12. Photo credit: NASA/Jack Pfaller

KSC-2009-2432

NASA Image and Video Library

2009-03-30

CAPE CANAVERAL, Fla. – In the Payload Hazardous Servicing Facility at NASA's Kennedy Space Center in Florida, a technician monitors the lowering of the Science Instrument Command and Data Handling Unit, or SIC&DH, onto a stand. The SIC&DH will be installed on the Hubble Space Telescope during space shuttle Atlantis' STS-125 mission, replacing the one that suffered a failure aboard the orbiting telescope on Sept. 27, 2008. The SIC&DH is being prepared for integration onto the Multi-Use Lightweight Equipment Carrier. The SIC&DH will be installed on the Hubble Space Telescope during space shuttle Atlantis' STS-125 mission, replacing one that suffered a failure aboard the orbiting telescope on Sept. 27, 2008. The carrier holds the payload for space shuttle Atlantis' STS-125 mission servicing NASA's Hubble Space Telescope, targeted to launch May 12. Photo credit: NASA/Jack Pfaller

Large-scale uniform bilayer graphene prepared by vacuum graphitization of 6H-SiC(0001) substrates.

PubMed

Wang, Qingyan; Zhang, Wenhao; Wang, Lili; He, Ke; Ma, Xucun; Xue, Qikun

2013-03-06

We report on the preparation of large-scale uniform bilayer graphenes on nominally flat Si-polar 6H-SiC(0001) substrates by flash annealing in ultrahigh vacuum. The resulting graphenes have a single thickness of one bilayer and consist of regular terraces separated by the triple SiC bilayer steps on the 6H-SiC(0001) substrates. In situ scanning tunneling microscopy reveals that suppression of pit formation on terraces and uniformity of SiC decomposition at step edges are the key factors to the uniform thickness. By studying the surface morphologies prepared under different annealing rates, it is found that the annealing rate is directly related to SiC decomposition, diffusion of the released Si/C atoms and strain relaxation, which together determine the final step structure and density of defects.

SIC-POVMS and MUBS: Geometrical Relationships in Prime Dimension

NASA Astrophysics Data System (ADS)

Appleby, D. M.

2009-03-01

The paper concerns Weyl-Heisenberg covariant SIC-POVMs (symmetric informationally complete positive operator valued measures) and full sets of MUBs (mutually unbiased bases) in prime dimension. When represented as vectors in generalized Bloch space a SIC-POVM forms a d2-1 dimensional regular simplex (d being the Hilbert space dimension). By contrast, the generalized Bloch vectors representing a full set of MUBs form d+1 mutually orthogonal d-1 dimensional regular simplices. In this paper we show that, in the Weyl-Heisenberg case, there are some simple geometrical relationships between the single SIC-POVM simplex and the d+1 MUB simplices. We go on to give geometrical interpretations of the minimum uncertainty states introduced by Wootters and Sussman, and by Appleby, Dang and Fuchs, and of the fiduciality condition given by Appleby, Dang and Fuchs.

An Overview of Wide Bandgap Silicon Carbide Sensors and Electronics Development at NASA Glenn Research Center

NASA Technical Reports Server (NTRS)

Hunter, Gary W.; Neudeck, Philip G.; Beheim, Glenn M.; Okojie, Robert S.; Chen, Liangyu; Spry, D.; Trunek, A.

2007-01-01

A brief overview is presented of the sensors and electronics development work ongoing at NASA Glenn Research Center which is intended to meet the needs of future aerospace applications. Three major technology areas are discussed: 1) high temperature SiC electronics, 2) SiC gas sensor technology development, and 3) packaging of harsh environment devices. Highlights of this work include world-record operation of SiC electronic devices including 500?C JFET transistor operation with excellent properties, atomically flat SiC gas sensors integrated with an on-chip temperature detector/heater, and operation of a packaged AC amplifier. A description of the state-of-the-art is given for each topic. It is concluded that significant progress has been made and that given recent advancements the development of high temperature smart sensors is envisioned.

SiC/SiC Composites for 1200 C and Above

NASA Technical Reports Server (NTRS)

DiCarlo, J. A.; Yun, H.-M.; Morscher, G. N.; Bhatt, R. T.

2004-01-01

The successful replacement of metal alloys by ceramic matrix composites (CMC) in high-temperature engine components will require the development of constituent materials and processes that can provide CMC systems with enhanced thermal capability along with the key thermostructural properties required for long-term component service. This chapter presents information concerning processes and properties for five silicon carbide (SiC) fiber-reinforced SiC matrix composite systems recently developed by NASA that can operate under mechanical loading and oxidizing conditions for hundreds of hours at 1204, 1315, and 1427 C, temperatures well above current metal capability. This advanced capability stems in large part from specific NASA-developed processes that significantly improve the creep-rupture and environmental resistance of the SiC fiber as well as the thermal conductivity, creep resistance, and intrinsic thermal stability of the SiC matrices.

Theoretical prediction of a novel inorganic fullerene-like family of silicon-carbon materials

NASA Astrophysics Data System (ADS)

Wang, Ruoxi; Zhang, Dongju; Liu, Chengbu

2005-08-01

In an effort to search for new inorganic fullerene-like structures, we designed a series of novel silicon-carbon cages, (SiC) n ( n = 6-36), based on the uniformly hybrid Si-C four- and six-membered-rings, and researched their geometrical and electronic structures, as well as their relative stabilities using the density function theory. Among these cages, the structures for n = 12, 16, and 36 were found to been energetically more favorable. The calculated disproportionation energy and binding energy per SiC unit show that the (SiC) 12 cage is the most stable one among these designed structures. The present calculations not only indicate that silicon-carbon fullerenes are promised to be synthesized in future, but also provide a new way for stabilizing silicon cages by uniformly doping carbon atoms into silicon structures.

Stellar Origins of C-13 and N-15-Enriched Presolar SiC Grains

NASA Technical Reports Server (NTRS)

Liu, Nan; Nittler, Larry R.; Alexander, Conel M. O’D.; Wang, Jianhua; Pignatari, Marco; Jose, Jordi; Nguyen, Ann

2016-01-01

Extreme excesses of 13 C ( C (12 C/ 13 C<10) and 15 N ( N (14 N/ 15 N< 20) in rare presolar SiC 20) in rare presolar SiClar SiC grains have been considered diagnostic of an origin in classical novae [1], though an origin in core-collapse supernovae (CCSNe) has also been proposed [2]. We report multi-element isotopic data for 19 13 C- and 15 N-enriched presolar SiC grains(12 C/13 C<16 and 14 N/ 15 N<150) from an acid resistant residue of the Murchison meteorite. These grains are enriched in 13 C and15 N, but with quite diverse Si isotopic signatures. Four grains with isotopic signatures. Four grains with isotopic signatures. Four grains with isotopic signatures. Four grains with isotopic signatures.

Final Technical Report - 300°C Capable Electronics Platform and Temperature Sensor System For Enhanced Geothermal Systems

DOE Office of Scientific and Technical Information (OSTI.GOV)

Chen, Cheng-Po; Shaddock, David; Sandvik, Peter

2012-11-30

A silicon carbide (SiC) based electronic temperature sensor prototype has been demonstrated to operate at 300°C. We showed continuous operation of 1,000 hours with SiC operational amplifier and surface mounted discreet resistors and capacitors on a ceramic circuit board. This feasibility demonstration is a major milestone in the development of high temperature electronics in general and high temperature geothermal exploration and well management tools in particular. SiC technology offers technical advantages that are not found in competing technologies such as silicon-on-insulator (SOI) at high temperatures of 200°C to 300°C and beyond. The SiC integrated circuits and packaging methods can bemore » used in new product introduction by GE Oil and Gas for high temperature down-hole tools. The existing SiC fabrication facility at GE is sufficient to support the quantities currently demanded by the marketplace, and there are other entities in the United States and other countries capable of ramping up SiC technology manufacturing. The ceramic circuit boards are different from traditional organic-based electronics circuit boards, but the fabrication process is compatible with existing ceramic substrate manufacturing. This project has brought high temperature electronics forward, and brings us closer to commercializing tools that will enable and reduce the cost of enhanced geothermal technology to benefit the public in terms of providing clean renewable energy at lower costs.« less

Ultralight, Recoverable, and High-Temperature-Resistant SiC Nanowire Aerogel.

PubMed

Su, Lei; Wang, Hongjie; Niu, Min; Fan, Xingyu; Ma, Mingbo; Shi, Zhongqi; Guo, Sheng-Wu

2018-04-24

Ultralight ceramic aerogels with the property combination of recoverable compressibility and excellent high-temperature stability are attractive for use in harsh environments. However, conventional ceramic aerogels are usually constructed by oxide ceramic nanoparticles, and their practical applications have always been limited by the brittle nature of ceramics and volume shrinkage at high temperature. Silicon carbide (SiC) nanowire offers the integrated properties of elasticity and flexibility of one-dimensional (1D) nanomaterials and superior high-temperature thermal and chemical stability of SiC ceramics, which makes it a promising building block for compressible ceramic nanowire aerogels (NWAs). Here, we report the fabrication and properties of a highly porous three-dimensional (3D) SiC NWA assembled by a large number of interweaving 3C-SiC nanowires of 20-50 nm diameter and tens to hundreds of micrometers in length. The SiC NWA possesses ultralow density (∼5 mg cm -3 ), excellent mechanical properties of large recoverable compression strain (>70%) and fatigue resistance, refractory property, oxidation and high-temperature resistance, and thermal insulating property (0.026 W m -1 K -1 at room temperature in N 2 ). When used as absorbents, the SiC NWAs exhibit an adsorption selectivity of low-viscosity organic solvents with high absorption capacity (130-237 g g -1 ). The successful fabrication of such an attractive material may provide promising perspectives to the design and fabrication of other compressible and multifunctional ceramic NWAs.

Structural and electrical characterization of annealed Si1-xCx/SiC thin film prepared by magnetron sputtering

NASA Astrophysics Data System (ADS)

Huang, Shi-Hua; Liu, Jian

2014-05-01

Si-rich Si1—xCx /SiC multilayer thin films are prepared using magnetron sputtering, subsequently followed by thermal annealing in the range of 800-1200 °C. The influences of annealing temperature (Ta) on the formation of Si and/or SiC nanocrystals (NCs) and on the electrical characteristics of the multilayer film are investigated by using a variety of analytical techniques, including X-ray diffraction (XRD), Raman spectroscopy and Fourier transform infrared spectrometry (FT-IR), current—voltage (I—V) technique, and capacitance-voltage (C—V) technique. XRD and Raman analyses indicate that Si NCs begin to form in samples for Ta >= 800 °C. At annealing temperatures of 1000 °C or higher, the formation of Si NCs is accompanied by the formation of SiC NCs. With the increase in the annealing temperature, the shift of FT-IR Si—C bond absorption spectra toward a higher wave number along with the change of band shape can be explained by a Si—C transitional phase between the loss of substitutional carbon and the formation of SiC precipitates and a precursor for the growth of SiC crystalline. The C—V and I—V results indicate that the interface quality of Si1—xCx/SiC multilayer film is improved significantly and the leakage current is reduced rapidly for Ta >= 1000 °C, which can be ascribed to the formation of Si and SiC NCs.

Microstructural, phase evolution and corrosion properties of silicon carbide reinforced pulse electrodeposited nickel-tungsten composite coatings

NASA Astrophysics Data System (ADS)

Singh, Swarnima; Sribalaji, M.; Wasekar, Nitin P.; Joshi, Srikant; Sundararajan, G.; Singh, Raghuvir; Keshri, Anup Kumar

2016-02-01

Silicon carbide (SiC) reinforced nickel-tungsten (Ni-W) coatings were successfully fabricated on steel substrate by pulse electrodeposition method (PED) and the amount of SiC was varied as 0 g/l, 2 g/l, and 5 g/l in Ni-W coating. Effect of subsequent addition of SiC on microstructures, phases and on corrosion property of the coating was investigated. Field emission scanning electron microscopy (FE-SEM) image of the surface morphology of the coating showed the transformation from the dome like structure to turtle shell like structure. X-ray diffraction (XRD) of Ni-W-5 g/l SiC showed the disappearance of (220) plane of Ni(W), peak splitting in major peak of Ni(W) and formation of distinct peak of W(Ni) solid solution. Absence of (220) plane, peak splitting and presence of W(Ni) solid solution was explained by the high resolution transmission electron microscopy (HR-TEM) images. Tafel polarization plot was used to study the corrosion property of the coatings in 0.5 M NaCl solution. Ni-W-5 g/l SiC coating was showed higher corrosion resistance (i.e. ∼21% increase in corrosion potential, Ecorr) compared to Ni-W coating. Two simultaneous phenomena have been identified for the enhanced corrosion resistance of Ni-W-5 g/l SiC coating. (a) Presence of crystallographic texture (b) formation of continuous double barrier layer of NiWO4 and SiO2.

Vertically cross-linked and porous CoNi2S4 nanosheets-decorated SiC nanowires with exceptional capacitive performance as a free-standing electrode for asymmetric supercapacitors

NASA Astrophysics Data System (ADS)

Zhao, Jian; Li, Zhenjiang; Zhang, Meng; Meng, Alan; Li, Qingdang

2016-11-01

In this paper, a simple, low-cost and mild hydrothermal technology of growing vertically cross-linked ternary nickel cobalt sulfides nanosheets (CoNi2S4 NSs) with porous characteristics on SiC nanowires (SiC NWs) supporters with outstanding resistances to oxidation and corrosion, good conductivity and large specific surface area deposited directly on carbon cloth (CC) is successfully developed, forming a new family of free-standing advanced hybrid electrode for asymmetric supercapacitors (ASCs). Such integrated electrode (SiC NWs@CoNi2S4 NSs) manifests intriguing electrochemical characteristics such as high specific capacity (231.1 mA h g-1 at 2 A g-1) and rate capability due to the synergistic effect of SiC NWs and CoNi2S4 NSs with unique morphology. Additionally, an asymmetric supercapacitor is also assembled via using this special hybrid architectures as positive electrode and activated carbon (AC) on Ni foam (NF) as negative electrode, and it can yield a high energy density of 57.8 W h kg-1 with a power density of 1.6 kW kg-1 and long cycling lifespan. This study constitutes an emerging attractive strategy to reasonably design and fabricate novel SiC NWs-based nanostructured electrodes with enhanced capacity, which holds great potential to be the candidate of electrode materials for environmentally benign as well as high-performance energy storage devices.

CLASSiC: Cherenkov light detection with silicon carbide

NASA Astrophysics Data System (ADS)

Adriani, Oscar; Albergo, Sebastiano; D'Alessandro, Raffaello; Lenzi, Piergiulio; Sciuto, Antonella; Starodubtsev, Oleksandr; Tricomi, Alessia

2017-02-01

We present the CLASSiC R&D for the development of a silicon carbide (SiC) based avalanche photodiode for the detection of Cherenkov light. SiC is a wide-bandgap semiconductor material, which can be used to make photodetectors that are insensitive to visible light. A SiC based light detection device has a peak sensitivity in the deep UV, making it ideal for Cherenkov light. Moreover, the visible blindness allows such a device to disentangle Cherenkov light and scintillation light in all those materials that scintillate above 400 nm. Within CLASSiC, we aim at developing a device with single photon sensitivity, having in mind two main applications. One is the use of the SiC APD in a new generation ToF PET scanner concept, using the Cherenov light emitted by the electrons following 511 keV gamma ray absorption as a time-stamp. Cherenkov is intrinsically faster than scintillation and could provide an unprecedentedly precise time-stamp. The second application concerns the use of SiC APD in a dual readout crystal based hadronic calorimeter, where the Cherenkov component is used to measure the electromagnetic fraction on an event by event basis. We will report on our progress towards the realization of the SiC APD devices, the strategies that are being pursued toward the realization of these devices and the preliminary results on prototypes in terms of spectral response, quantum efficiency, noise figures and multiplication.

Matrix Structure Evolution and Nanoreinforcement Distribution in Mechanically Milled and Spark Plasma Sintered Al-SiC Nanocomposites.

PubMed

Saheb, Nouari; Aliyu, Ismaila Kayode; Hassan, Syed Fida; Al-Aqeeli, Nasser

2014-09-19

Development of homogenous metal matrix nanocomposites with uniform distribution of nanoreinforcement, preserved matrix nanostructure features, and improved properties, was possible by means of innovative processing techniques. In this work, Al-SiC nanocomposites were synthesized by mechanical milling and consolidated through spark plasma sintering. Field Emission Scanning Electron Microscope (FE-SEM) with Energy Dispersive X-ray Spectroscopy (EDS) facility was used for the characterization of the extent of SiC particles' distribution in the mechanically milled powders and spark plasma sintered samples. The change of the matrix crystallite size and lattice strain during milling and sintering was followed through X-ray diffraction (XRD). The density and hardness of the developed materials were evaluated as function of SiC content at fixed sintering conditions using a densimeter and a digital microhardness tester, respectively. It was found that milling for 24 h led to uniform distribution of SiC nanoreinforcement, reduced particle size and crystallite size of the aluminum matrix, and increased lattice strain. The presence and amount of SiC reinforcement enhanced the milling effect. The uniform distribution of SiC achieved by mechanical milling was maintained in sintered samples. Sintering led to the increase in the crystallite size of the aluminum matrix; however, it remained less than 100 nm in the composite containing 10 wt.% SiC. Density and hardness of sintered nanocomposites were reported and compared with those published in the literature.

Assembly and Delivery of Rabbit Capsules for Irradiation of Silicon Carbide Cladding Tube Specimens in the High Flux Isotope Reactor

DOE Office of Scientific and Technical Information (OSTI.GOV)

Koyanagi, Takaaki; Petrie, Christian M.

Neutron irradiation of silicon carbide (SiC)-based fuel cladding under a high radial heat flux presents a critical challenge for SiC cladding concepts in light water reactors (LWRs). Fission heating in the fuel provides a high heat flux through the cladding, which, combined with the degraded thermal conductivity of SiC under irradiation, results in a large temperature gradient through the thickness of the cladding. The strong temperature dependence of swelling in SiC creates a complex stress profile in SiCbased cladding tubes as a result of differential swelling. The Nuclear Science User Facilities (NSUF) Program within the US Department of Energy Officemore » of Nuclear Energy is supporting research efforts to improve the scientific understanding of the effects of irradiation on SiC cladding tubes. Ultimately, the results of this project will provide experimental validation of multi-physics models for SiC-based fuel cladding during LWR operation. The first objective of this project is to irradiate tube specimens using a previously developed design that allows for irradiation testing of miniature SiC tube specimens subjected to a high radial heat flux. The previous “rabbit” capsule design uses the gamma heating in the core of the High Flux Isotope Reactor (HFIR) to drive a high heat flux through the cladding tube specimens. A compressible aluminum foil allows for a constant thermal contact conductance between the cladding tubes and the rabbit housing despite swelling of the SiC tubes. To allow separation of the effects of irradiation from those due to differential swelling under a high heat flux, a new design was developed under the NSUF program. This design allows for irradiation of similar SiC cladding tube specimens without a high radial heat flux. This report briefly describes the irradiation experiment design concepts, summarizes the irradiation test matrix, and reports on the successful delivery of six rabbit capsules to the HFIR. Rabbits of both low and high heat flux configurations have been assembled, welded, evaluated, and delivered to the HFIR along with a complete quality assurance fabrication package. These rabbits contain a wide variety of specimens including monolith tubes, SiC fiber SiC matrix (SiC/SiC) composites, duplex specimens (inner composite, outer monolith), and specimens with a variety of metallic or ceramic coatings on the outer surface. The rabbits are targeted for insertion during HFIR cycle 475, which is scheduled for September 2017.« less

Construction Progress of the S-IC Test Stand Complex Bunker House

NASA Technical Reports Server (NTRS)

1963-01-01

At its founding, the Marshall Space Flight Center (MSFC) inherited the Army's Jupiter and Redstone test stands, but much larger facilities were needed for the giant stages of the Saturn V. From 1960 to 1964, the existing stands were remodeled and a sizable new test area was developed. The new comprehensive test complex for propulsion and structural dynamics was unique within the nation and the free world, and they remain so today because they were constructed with foresight to meet the future as well as on going needs. Construction of the S-IC Static test stand complex began in 1961 in the west test area of MSFC, and was completed in 1964. The S-IC static test stand was designed to develop and test the 138-ft long and 33-ft diameter Saturn V S-IC first stage, or booster stage, weighing in at 280,000 pounds. Required to hold down the brute force of a 7,500,000-pound thrust produced by 5 F-1 engines, the S-IC static test stand was designed and constructed with the strength of hundreds of tons of steel and 12,000,000 pounds of cement, planted down to bedrock 40 feet below ground level. The foundation walls, constructed with concrete and steel, are 4 feet thick. The base structure consists of four towers with 40-foot-thick walls extending upward 144 feet above ground level. The structure was topped by a crane with a 135-foot boom. With the boom in the upright position, the stand was given an overall height of 405 feet, placing it among the highest structures in Alabama at the time. In addition to the S-IC stand, additional related facilities were built during this time frame. Built to the east of the S-IC stand, the block house served as the control room. To the south of the blockhouse was a newly constructed pump house used for delivering water to the S-IC stand during testing. North of the massive test stand, the F-1 Engine test stand was built for testing a single F-1 engine. Just southeast of the S-IC stand a concrete bunker house was constructed. The bunker housed an emergency crew clad in fire proof gear, who were close at hand should any emergencies arise during testing. This photo of the completed bunker house was taken on May 7, 1963.

Temperature-Dependent Short-Circuit Capability of Silicon Carbide Power MOSFETs

DOE PAGES

Wang, Zhiqiang; Shi, Xiaojie; Tolbert, Leon M.; ...

2016-02-01

Our paper presents a comprehensive short-circuit ruggedness evaluation and numerical investigation of up-to-date commercial silicon carbide (SiC) MOSFETs. The short-circuit capability of three types of commercial 1200-V SiC MOSFETs is tested under various conditions, with case temperatures from 25 to 200 degrees C and dc bus voltages from 400 to 750 V. It is found that the commercial SiC MOSFETs can withstand short-circuit current for only several microseconds with a dc bus voltage of 750 V and case temperature of 200 degrees C. Moreover, the experimental short-circuit behaviors are compared, and analyzed through numerical thermal dynamic simulation. Specifically, an electrothermalmore » model is built to estimate the device internal temperature distribution, considering the temperature-dependent thermal properties of SiC material. Based on the temperature information, a leakage current model is derived to calculate the main leakage current components (i.e., thermal, diffusion, and avalanche generation currents). Finally, numerical results show that the short-circuit failure mechanisms of SiC MOSFETs can be thermal generation current induced thermal runaway or high-temperature-related gate oxide damage.« less

High dose neutron irradiations of Hi-Nicalon Type S silicon carbide composites, Part 1: Microstructural evaluations

DOE Office of Scientific and Technical Information (OSTI.GOV)

Perez-Bergquist, Alex G.; Nozawa, Takashi; Shih, Chunghao Phillip

Over the past decade, significant progress has been made in the development of silicon carbide (SiC) composites, composed of near-stoichiometric SiC fibers embedded in a crystalline SiC matrix, to the point that such materials can now be considered nuclear grade. Recent neutron irradiation studies of Hi-Nicalon Type S SiC composites showed excellent radiation response at damage levels of 30-40 dpa at temperatures of 300-800 °C. However, more recent studies of these same fiber composites irradiated to damage levels of >70 dpa at similar temperatures showed a marked decrease in ultimate flexural strength, particularly at 300 °C. Here, electron microscopy ismore » used to analyze the microstructural evolution of these irradiated composites in order to investigate the cause of the degradation. While minimal changes were observed in Hi-Nicalon Type S SiC composites irradiated at 800 °C, substantial microstructural evolution is observed in those irradiated at 300° C. Furthermore, carbonaceous particles in the fibers grew by 25% compared to the virgin case, and severe cracking occurred at interphase layers.« less

Effect of Crystal Defects on Minority Carrier Diffusion Length in 6H SiC Measured Using the Electron Beam Induced Current Method

NASA Technical Reports Server (NTRS)

Tabib-Azar, Massood

1997-01-01

We report values of minority carrier diffusion length in n-type 6H SiC measured using a planar Electron Beam Induced Current (EBIC) method. Values of hole diffusion length in defect free regions of n-type 6H SiC, with a doping concentration of 1.7El7 1/cu cm, ranged from 1.46 microns to 0.68 microns. We next introduce a novel variation of the planar method used above. This 'planar mapping' technique measured diffusion length along a linescan creating a map of diffusion length versus position. This map is then overlaid onto the EBIC image of the corresponding linescan, allowing direct visualization of the effect of defects on minority carrier diffusion length. Measurements of the above n-type 6H SiC resulted in values of hole diffusion length ranging from 1.2 micron in defect free regions to below 0.1 gm at the center of large defects. In addition, measurements on p-type 6H SiC resulted in electron diffusion lengths ranging from 1.42 micron to 0.8 micron.

Phase Analysis of Laser Direct Etching and Water Assisted Laser Combined Etching of SiC Ceramics

NASA Astrophysics Data System (ADS)

Yuan, Genfu; Cong, Qidong; Zhang, Chen; Xie, Bingbing

2017-12-01

In this study, to discover the etching mechanism of SiC ceramics under laser direct etching and water-jet assisted laser combined etching, the phenomena of substance change on the etched surface were investigated. Also, the rules of substance transfer in etching are discussed. The elemental content change and the phase change of the etching products on the etched surface were analyzed by energy dispersive spectroscopy (EDS) and X-ray diffraction (XRD), respectively. These studies showed a high amount of carbon black on the etched surface, because of the decomposition of SiC ceramics under the high-power-density laser irradiation. SiC decomposed to Si under the laser irradiation, and the subsequent chemical reaction of Si and O2 easily produced SiO2. The SiO2 on the etched surface melted and vaporized, whereas most of SiO2 was removed through splashing, changing the chemical composition of the etched surface. Following the water jet introduction, an increased amount of O existed on the combined etching surface, because the chemical reaction of SiC and H2O easily produced SiO2 under the high-power-density laser irradiation.

Alkali (Li, K and Na) and alkali-earth (Be, Ca and Mg) adatoms on SiC single layer

NASA Astrophysics Data System (ADS)

Baierle, Rogério J.; Rupp, Caroline J.; Anversa, Jonas

2018-03-01

First-principles calculations within the density functional theory (DFT) have been addressed to study the energetic stability, and electronic properties of alkali and alkali-earth atoms adsorbed on a silicon carbide (SiC) single layer. We observe that all atoms are most stable (higher binding energy) on the top of a Si atom, which moves out of the plane (in the opposite direction to the adsorbed atom). Alkali atoms adsorbed give raise to two spin unpaired electronic levels inside the band gap leading the SiC single layer to exhibit n-type semiconductor properties. For alkaline atoms adsorbed there is a deep occupied spin paired electronic level inside the band gap. These finding suggest that the adsorption of alkaline and alkali-earth atoms on SiC layer is a powerful feature to functionalize two dimensional SiC structures, which can be used to produce new electronic, magnetic and optical devices as well for hydrogen and oxygen evolution reaction (HER and OER, respectively). Furthermore, we observe that the adsorption of H2 is ruled by dispersive forces (van der Waals interactions) while the O2 molecule is strongly adsorbed on the functionalized system.

Taking SiC Power Devices to the Final Frontier: Addressing Challenges of the Space Radiation Environment

NASA Technical Reports Server (NTRS)

Lauenstein, Jean-Marie; Casey, Megan

2017-01-01

Silicon carbide power device technology has the potential to enable a new generation of aerospace power systems that demand high efficiency, rapid switching, and reduced mass and volume in order to expand space-based capabilities. For this potential to be realized, SiC devices must be capable of withstanding the harsh space radiation environment. Commercial SiC components exhibit high tolerance to total ionizing dose but to date, have not performed well under exposure to heavy ion radiation representative of the on-orbit galactic cosmic rays. Insertion of SiC power device technology into space applications to achieve breakthrough performance gains will require intentional development of components hardened to the effects of these highly-energetic heavy ions. This work presents heavy-ion test data obtained by the authors over the past several years for discrete SiC power MOSFETs, JFETs, and diodes in order to increase the body of knowledge and understanding that will facilitate hardening of this technology to space radiation effects. Specifically, heavy-ion irradiation data taken under different bias, temperature, and ion beam conditions is presented for devices from different manufacturers, and the emerging patterns discussed.

Silicon Carbide Diodes Performance Characterization and Comparison With Silicon Devices

NASA Technical Reports Server (NTRS)

Lebron-Velilla, Ramon C.; Schwarze, Gene E.; Trapp, Scott

2003-01-01

Commercially available silicon carbide (SiC) Schottky diodes from different manufacturers were electrically tested and characterized at room temperature. Performed electrical tests include steady state forward and reverse I-V curves, as well as switching transient tests performed with the diodes operating in a hard switch dc-to-dc buck converter. The same tests were performed in current state of the art silicon (Si) and gallium arsenide (GaAs) Schottky and pn junction devices for evaluation and comparison purposes. The SiC devices tested have a voltage rating of 200, 300, and 600 V. The comparison parameters are forward voltage drop at rated current, reverse current at rated voltage and peak reverse recovery currents in the dc to dc converter. Test results show that steady state characteristics of the tested SiC devices are not superior to the best available Si Schottky and ultra fast pn junction devices. Transient tests reveal that the tested SiC Schottky devices exhibit superior transient behavior. This is more evident at the 300 and 600 V rating where SiC Schottky devices showed drastically lower reverse recovery currents than Si ultra fast pn diodes of similar rating.

Fast neutron detection at near-core location of a research reactor with a SiC detector

NASA Astrophysics Data System (ADS)

Wang, Lei; Jarrell, Josh; Xue, Sha; Tan, Chuting; Blue, Thomas; Cao, Lei R.

2018-04-01

The measurable charged-particle produced from the fast neutron interactions with the Si and C nucleuses can make a wide bandgap silicon carbide (SiC) sensor intrinsically sensitive to neutrons. The 4H-SiC Schottky detectors have been fabricated and tested at up to 500 °C, presenting only a slightly degraded energy resolution. The response spectrum of the SiC detectors were also obtained by exposing the detectors to external neutron beam irradiation and at a near-core location where gamma-ray field is intense. The fast neutron flux of these two locations are ∼ 4 . 8 × 104cm-2 ṡs-1 and ∼ 2 . 2 × 107cm-2 ṡs-1, respectively. At the external beam location, a Si detector was irradiated side-by-side with SiC detector to disjoin the neutron response from Si atoms. The contribution of gamma ray, neutron scattering, and charged-particles producing reactions in the SiC was discussed. The fast neutron detection efficiencies were determined to be 6 . 43 × 10-4 for the external fast neutron beam irradiation and 6 . 13 × 10-6 for the near-core fast neutron irradiation.

Relaxations of fluorouracil tautomers by decorations of fullerene-like SiCs: DFT studies

NASA Astrophysics Data System (ADS)

Kouchaki, Alireza; Gülseren, Oğuz; Hadipour, Nasser; Mirzaei, Mahmoud

2016-06-01

Decorations of silicon carbide (SiC) fullerene-like nanoparticles by fluorouracil (FU) and its tautomers are investigated through density functional theory (DFT) calculations. Two models of fullerene-like particles including Si12C8 and Si8C12 are constructed to be counterparts of decorated hybrid structures, FU@Si12C8 and FU@Si8C12, respectively. The initial models including original FU and tautomeric structures and SiC nanoparticles are individually optimized and then combined for further optimizations in the hybrid forms. Covalent bonds are observed for FU@Si12C8 hybrids, whereas non-covalent interactions are seen for FU@Si8C12 ones. The obtained properties indicated that Si12C8 model could be considered as a better counterpart for interactions with FU structures than Si8C12 model. The results also showed significant effects of interactions on the properties of atoms close to the interacting regions in nanoparticles. Finally, the tautomeric structures show different behaviors in interactions with SiC nanoparticles, in which the SiC nanoparticles could be employed to detect the situations of tautomeric processes for FU structures.

Seborrheic inclusion cyst of the skin positive for cytoplasmic inclusion bodies and HPV antigen.

PubMed

Terada, Tadashi

2012-01-01

Seborrheic inclusion cyst (SIC) is a very rare variant of epidermal cyst of the skin. SIC shows seborrheic keratosis (SK)-like lesion in epidermal cyst. SIC is extremely rare; only 6 case reports have been published in the English literature. However, no immunohistochemical study of SIC has been reported. A 41-year-old Japanese man noticed a subcutaneous tumor in the neck. Physical examination showed slightly mobile tumor in the subcutaneous tissue, and total excision was performed. Grossly, the tumor (1 x 1 x 0.8 cm) was cyst containing atheromatous keratin. Microscopically, the lesion is a cyst containing keratins. About one half of the cyst showed features of epidermal cyst consisting of mature squamous epithelium with granular layers. The other one half showed SK-like epidermal proliferation. The SK-like area showed basaloid cell proliferation with pseudohorn cysts. No significant atypia was noted. Many eosinophilic cytoplasmic inclusion bodies were noted in the SK-like area. Immunohistochemically, the SK-like area was positive for pancytokeratin AE1/3, pancytokeratin CAM5.2, p63, and Ki-67 (labeling=8%) and HPV, but negative for p53. The pathological diagnosis was SIC.

Giant (12 ×12 ) and (4 ×8 ) reconstructions of the 6 H -SiC(0001) surface obtained by progressive enrichment in Si atoms

NASA Astrophysics Data System (ADS)

Martrou, David; Leoni, Thomas; Chaumeton, Florian; Castanié, Fabien; Gauthier, Sébastien; Bouju, Xavier

2018-02-01

Silicon carbide (SiC) is nowadays a major material for applications in high power electronics, quantum optics, or nitride semiconductors growth. Mastering the surface of SiC substrate is crucial to obtain reproducible results. Previous studies on the 6 H -SiC(0001) surface have determined several reconstructions, including the (√{3 }×√{3 }) -R 30∘ and the (3 ×3 ) . Here, we introduce a process of progressive Si enrichment that leads to the formation of two reconstructions, the giant (12 ×12 ) and the (4 ×8 ) . From electron diffraction and tunneling microscopy completed by molecular dynamics simulations, we build models introducing a type of Si adatom bridging two Si surface atoms. Using these Si bridges, we also propose a structure for two other reconstructions, the (2 √{3 }×2 √{3 }) -R 30∘ and the (2 √{3 }×2 √{13 } ). We show that five reconstructions follow each other with Si coverage ranging from 1 and 1.444 monolayer. This result opens the way to greatly improve the control of 6 H -SiC(0001) at the atomic scale.

Comparison of the dynamic fatigue behavior of two monolithic SiC and an Al{sub 2}O{sub 3}/SiC composite

DOE Office of Scientific and Technical Information (OSTI.GOV)

Breder, K.; Tennery, V.J.

1994-09-01

Two monolithic silicon carbides, NT230 siliconized SiC from Norton Saint Gobain and sintered {beta}-SiC from Coors, and a silicon carbide particulate reinforced alumina ceramic composite from Lanxide, which all are candidate materials for pressurized heat exchangers in coal-fired power plants have been evaluated. The fast fracture flexure strength was measured as a function of temperature. All candidate materials retained a sufficient strength level up to 1400C. The susceptibility to slow crack growth (SCG) was evaluated by the dynamic fatigue method at 1100C and 1400C. None of the materials exhibited SCG at 1100C. At 1400C the siliconized SiC ceramic showed limitedmore » SCG and the composite ceramic exhibited creep damage when stressed to 50% of fast fracture strength at the intermediate and slow stressing rates. This prevented the evaluation of the SCG properties of this material at 1400C. Fractography supported the mechanical observations and with the exception of the specimens which exhibited creep damage, only the siliconized SiC showed a small SCG damage zone at long times at 1400C.« less

Elevated-temperature fracture resistances of monolithic and composite ceramics using chevron-notched bend tests

NASA Technical Reports Server (NTRS)

Ghosh, Asish; Jenkins, Michael G.; Ferber, Mattison K.; Peussa, Jouko; Salem, Jonathan A.

1992-01-01

The quasi-static fracture behaviors of monolithic ceramics (SiC, Si3N4, MgAl2O4), self-reinforced monoliths (acicular grained Si3N4, acicular grained mullite), and ceramic matrix composites (SiC whisker/Al2O3 matrix, TiB2 particulate/SiC matrix, SiC fiber/CVI SiC matrix, Al2O3 fiber/CVI SiC matrix) were measured over the temperature range of 20 to 1400 C. The chevron notched, bend bar test geometry was essential for characterizing the elevated temperature fracture resistances of this wide range of quasi-brittle materials during stable crack growth. Fractography revealed the differences in the fracture behavior of the different materials at the various temperatures. The fracture resistances of the self-reinforced monoliths were comparable to those of the composites and the fracture mechanisms were found to be similar at room temperature. However at elevated temperatures the differences of the fracture behavior became apparent where the superior fracture resistance of the self-reinforced monoliths were attributed to the minor amounts of glassy, intergranular phases which were often more abundant in the composites and affected the fracture behavior when softened by elevated temperatures.

Technical and cost advantages of silicon carbide telescopes for small-satellite imaging applications

NASA Astrophysics Data System (ADS)

Kasunic, Keith J.; Aikens, Dave; Szwabowski, Dean; Ragan, Chip; Tinker, Flemming

2017-09-01

Small satellites ("SmallSats") are a growing segment of the Earth imaging and remote sensing market. Designed to be relatively low cost and with performance tailored to specific end-use applications, they are driving changes in optical telescope assembly (OTA) requirements. OTAs implemented in silicon carbide (SiC) provide performance advantages for space applications but have been predominately limited to large programs. A new generation of lightweight and thermally-stable designs is becoming commercially available, expanding the application of SiC to small satellites. This paper reviews the cost and technical advantages of an OTA designed using SiC for small satellite platforms. Taking into account faceplate fabrication quilting and surface distortion after gravity release, an optimized open-back SiC design with a lightweighting of 70% for a 125-mm SmallSat-class primary mirror has an estimated mass area density of 2.8 kg/m2 and an aspect ratio of 40:1. In addition, the thermally-induced surface error of such optimized designs is estimated at λ/150 RMS per watt of absorbed power. Cost advantages of SiC include reductions in launch mass, thermal-management infrastructure, and manufacturing time based on allowable assembly tolerances.

Costs of Occupational Injuries in Construction in the United States

PubMed Central

Waehrer, Geetha M.; Dong, Xiuwen S.; Miller, Ted; Haile, Elizabeth; Men, Yurong

2008-01-01

This paper presents costs of fatal and non-fatal injuries for the construction industry using 2002 national incidence data from the Bureau of Labor Statistics and a comprehensive cost model that includes direct medical costs, indirect losses in wage and household productivity, as well as an estimate of the quality of life costs due to injury. Costs are presented at the three-digit industry level, by worker characteristics, and by detailed source and event of injury. The total costs of fatal and non-fatal injuries in the construction industry were estimated at $11.5 billion in 2002, 15% of the costs for all private industry. The average cost per case of fatal or nonfatal injury is $27,000 in construction, almost double the per-case cost of $15,000 for all industry in 2002. Five industries accounted for over half the industry’s total fatal and non-fatal injury costs. They were miscellaneous special trade contractors (SIC 179), followed by plumbing, heating and air-conditioning (SIC 171), electrical work (SIC 173), heavy construction except highway (SIC 162), and residential building construction (SIC 152), each with over $1 billion in costs. PMID:17920850

Silicon Carbide Power Device Performance Under Heavy-Ion Irradiation

NASA Technical Reports Server (NTRS)

Lauenstein, Jean-Marie; Casey, Megan; Topper, Alyson; Wilcox, Edward; Phan, Anthony; Ikpe, Stanley; LaBel, Ken

2015-01-01

Heavy-ion induced degradation and catastrophic failure data for SiC power MOSFETs and Schottky diodes are examined to provide insight into the challenge of single-event effect hardening of SiC power devices.

Alkyl complexes of strontium and barium: synthesis and structural characterization of [(Me3Si)2(MeOMe2Si)C]2Sr(THF) and [(Me3Si)2(MeOMe2Si)C]2Ba(MeOCH2CH2OMe).

PubMed

Izod, Keith; Liddle, Stephen T; Clegg, William

2003-06-25

Metathesis between either SrI2 or BaI2 and 2 equiv of {(Me3Si)2(MeOMe2Si)C}K in THF yields the novel heavier alkali metal dialkyls {(Me3Si)2(MeOMe2Si)C}2M(L) [M(L) = Sr(THF) (2), Ba(DME) (3) (DME = 1,2-dimethoxyethane)] after recrystallization.

KSC-2009-2516

NASA Image and Video Library

2009-04-02

CAPE CANAVERAL, Fla. – In the Payload Hazardous Servicing Facility at NASA's Kennedy Space Center in Florida, technicians look over the Science Instrument Command and Data Handling Unit, or SIC&DH. The SIC&DH will be installed on the Multi-Use Lightweight Equipment Carrier in the facility. The SIC&DH will be installed on the Hubble Space Telescope during space shuttle Atlantis' STS-125 mission. This unit will replace the one that suffered a failure aboard the orbiting telescope on Sept. 27, 2008. Atlantis is targeted for launch on May 12. Photo credit: NASA/Dimitri Gerondidakis

Elevated temperature mechanical behavior of monolithic and SiC whisker-reinforced silicon nitrides

NASA Technical Reports Server (NTRS)

Salem, Jonathan A.; Choi, Sung R.; Sanders, William A.; Fox, Dennis S.

1991-01-01

The mechanical behavior of a 30 volume percent SiC whisker reinforced silicon nitride and a similar monolithic silicon nitride were measured at several temperatures. Measurements included strength, fracture toughness, crack growth resistance, dynamic fatigue susceptibility, post oxidation strength, and creep rate. Strength controlling defects were determined with fractographic analysis. The addition of SiC whiskers to silicon nitride did not substantially improve the strength, fracture toughness, or crack growth resistance. However, the fatigue resistance, post oxidation strength, and creep resistance were diminished by the whisker addition.

Silicon Carbide (SiC) Device and Module Reliability, Performance of a Loop Heat Pipe Subjected to a Phase-Coupled Heat Input to an Acceleration Field

DTIC Science & Technology

2016-05-01

AFRL-RQ-WP-TR-2016-0108 SILICON CARBIDE (SiC) DEVICE AND MODULE RELIABILITY Performance of a Loop Heat Pipe Subjected to a Phase-Coupled... Heat Input to an Acceleration Field Kirk L. Yerkes (AFRL/RQQI) and James D. Scofield (AFRL/RQQE) Flight Systems Integration Branch (AFRL/RQQI...CARBIDE (SiC) DEVICE AND MODULE RELIABILITY Performance of a Loop Heat Pipe Subjected to a Phase-Coupled Heat Input to an Acceleration Field 5a

Rapid Fabrication of Lightweight SiC Optics using Reactive Atom Plasma (RAP) Processing

NASA Technical Reports Server (NTRS)

Fiske, Peter S.

2006-01-01

Reactive Atom Plasma (RAP) processing is a non-contact, plasma-based processing technology that can be used to generate damage-free optical surfaces. We have developed tools and processes using RAP that allow us to shape extremely lightweight mirror Surfaces made from extremely hard-to-machine materials (e.g. SiC). We will describe our latest results using RAP in combination with other technologies to produce finished lightweight SiC mirrors and also discuss applications for RAP in the rapid fabrication of mirror segments for reflective and grazing incidence telescopes.

The Preparation of Silicon-Containing Ceramics by Organosilicon Polymer Pyrolysis

DTIC Science & Technology

1988-06-25

polymer , of composition [(CH3SiHNH)a(CH3SiNb]m, gives a black solid, a mixture of SiC , Si3N4, and some free carbon, on pyrolysis ...nitride (eq. 1) [7] is a possibility. 5 Si3N 4(s) + C (s) , 3 SiC (s) +2 N2(g) (1) The study of the pyrolysis products of preceramic polymers is not...approximately one, pyrolysis of the product polymer gave a black ceramic solid in 84% yield which analysis showed to have a formal composition (1 SiC +

Saturn V S-IC (First) Stage

NASA Technical Reports Server (NTRS)

2004-01-01

This cutaway illustration shows the Saturn V S-IC (first) stage with detailed callouts of the components. The S-IC Stage is 138 feet long and 33 feet in diameter, producing 7,500,000 pounds of thrust through five F-1 engines that are powered by liquid oxygen and kerosene. Four of the engines are mounted on an outer ring and gimbal for control purposes. The fifth engine is rigidly mounted in the center. When ignited, the roar produced by the five engines equals the sound of 8,000,000 hi-fi sets.

Dual ohmic contact to N- and P-type silicon carbide

NASA Technical Reports Server (NTRS)

Okojie, Robert S. (Inventor)

2013-01-01

Simultaneous formation of electrical ohmic contacts to silicon carbide (SiC) semiconductor having donor and acceptor impurities (n- and p-type doping, respectively) is disclosed. The innovation provides for ohmic contacts formed on SiC layers having n- and p-doping at one process step during the fabrication of the semiconductor device. Further, the innovation provides a non-discriminatory, universal ohmic contact to both n- and p-type SiC, enhancing reliability of the specific contact resistivity when operated at temperatures in excess of 600.degree. C.

Modeling and Simulation of Ceramic Arrays to Improve Ballistic Performance

DTIC Science & Technology

2014-04-30

experiments (tiles from Supplier, sintered SiC) 15. SUBJECT TERMS Adhesive Layer Effect, .30cal AP M2 Projectile, 762x39 PS Projectile, SPH , Aluminum...Aluminum (AI5083) □ Impacts by .30cal AP-M2 projectile and are modeled using SPH elements in AutoDyn □ Center strike model validation runs with SiC tiles...View SiC\\ Front View □ Smoothed-particle hydrodynamics ( SPH ) used for al parts J SPH Size 0.4 used initially □ SPH Size 0.2 used to capture

Microstructural optimization of solid-state sintered silicon carbide

NASA Astrophysics Data System (ADS)

Vargas-Gonzalez, Lionel R.

Silicon carbide armor, manufactured through solid-state sintering, liquid-phase sintering, and hot-pressing, is being used by the United States Armed Forces for personal and vehicle protection. There is a lack of consensus, however, on which process results in the best-performing ballistic armor. Previous studies have shown that hot-pressed ceramics processed with secondary oxide and/or rare earth oxides, which exhibit high fracture toughness, perform well in handling and under ballistic impact. This high toughness is due to the intergranular nature of the fracture, creating a tortuous path for cracks and facilitating crack deflection and bridging. However, it has also been shown that higher-hardness sintered SiC materials might perform similarly or better to hot-pressed armor, in spite of the large fracture toughness deficit, if the microstructure (density, grain size, purity) of these materials are improved. In this work, the development of theoretically-dense, clean grain boundary, high hardness solid-state sintered silicon carbide (SiC) armor was pursued. Boron carbide and graphite (added as phenolic resin to ensure the carbon is finely dispersed throughout the microstructure) were used as the sintering aids. SiC batches between 0.25--4.00 wt.% carbon were mixed and spray dried. Cylindrical pellets were pressed at 13.7 MPa, cold-isostatically pressed (CIP) at 344 MPa, sintered under varying sintering soaking temperatures and heating rates, and varying post hot-isostatic pressing (HIP) parameters. Carbon additive amounts between 2.0--2.5 wt.% (based on the resin source), a 0.36 wt.% B4C addition, and a 2050°C sintering soak yielded parts with high sintering densities (˜95.5--96.5%) and a fine, equiaxed microstructure (d50 = 2.525 mum). A slow ramp rate (10°C/min) prevented any occurrence of abnormal grain growth. Post-HIPing at 1900°C removed the remaining closed porosity to yield a theoretically-dense part (3.175 g/cm3, according to rule of mixtures). These parts exhibited higher density and finer microstructure than a commercially-available sintered SiC from Saint-Gobain (Hexoloy Enhanced, 3.153 g/cm3 and d50 = 4.837 mum). Due to the optimized microstructure, Verco SiC parts exhibited the highest Vickers (2628.30 +/- 44.13 kg/mm 2) and Knoop (2098.50 +/- 24.8 kg/mm2) hardness values of any SiC ceramic, and values equal to those of the "gold standard" hot-pressed boron carbide (PAD-B4C). While the fracture toughness of hot-pressed SiC materials (˜4.5 MPa m ) are almost double that of Verco SiC (2.4 MPa m ), Verco SiC is a better performing ballistic product, implying that the higher hardness of the theoretically-dense, clean-grain boundary, fine-grained SiC is the defining mechanical property for optimization of ballistic behavior.

A novel submucosal injection solution for endoscopic resection of large colorectal lesions: a randomized, double-blind trial.

PubMed

Repici, Alessandro; Wallace, Michael; Sharma, Prateek; Bhandari, Pradeep; Lollo, Gianluca; Maselli, Roberta; Hassan, Cesare; Rex, Douglas K

2018-05-08

SIC-8000 (Eleview) is a new FDA-approved solution for submucosal injection developed to provide long-lasting cushion to facilitate endoscopic resection maneuvers. Our aim was to compare the efficacy and safety of SIC-8000 with those of saline solution, when performing endoscopic mucosal resection (EMR) of large colorectal lesions. In a randomized double-blind trial, patients undergoing EMR for ≥20 mm colorectal non-pedunculated lesions were randomized in a 1:1 ratio between SIC-8000 and saline solution as control solution in 5 tertiary centers. Endoscopists and patients were blinded to the type of submucosal solution used. Total volume to complete EMR and per lesion size and time of resection were primary end-points, whereas the Sydney Resection Quotient (SRQ), as well as other EMR outcomes, and the rate of adverse events were secondary. A 30-day telephone follow up was performed. An alpha level <0.05 was considered as statistically significant (NCT 02654418). Of the 327 patients screened, 226 (mean age: 66±10; males: 56%) were enrolled in the study and randomized between the 2 submucosal agents. Of these, 211 patients (mean size of the lesions 33±13 mm; I-s: 36%; proximal colon: 74%) entered in the final analysis (SIC-8000: 102; saline solution: 109). EMR was complete in all cases. The total volume needed for EMR was significantly less in the SIC-8000 arm compared with saline solution (16.1±9.8 mL vs 31.6±32.0 mL; p<0.001). This corresponded to an average volume per lesion size of 0.5±0.3 mL/mm and 0.9±0.6 mL/mm with SIC-8000 and saline solution, respectively, (p<0.001). The mean time to completely resect the lesion tended to be lower with SIC-8000 as compared with saline solution (19.1±16.8 minutes vs 29.7±68.9 minutes; p=0.1). The SRQ was significantly higher with SIC-8000 as compared with saline solution (10.3±8.1 vs 8.0±5.7; p=0.04) with a trend for a lower number of resected pieces (5.7±6.0 vs 6.5±5.04; p=0.052) and a higher rate of en bloc resections (19/102, 18.6% vs 12/111, 11.0%; p=0.1). The rate of adverse events was similar between the 2 arms (SIC-8000: 18.6%, saline solution: 17%), and none of the serious adverse events (SIC-8000: 8.8%; saline solution: 10.7%) was related with study treatment. In a double-blind, randomized clinical trial, a new FDA approved agent for sub-mucosal injection appeared to be a more effective and equally safe submucosal agent for EMR injection than saline solution. Copyright © 2018 American Society for Gastrointestinal Endoscopy. Published by Elsevier Inc. All rights reserved.