Packaging Technologies for High Temperature Electronics and Sensors

NASA Technical Reports Server (NTRS)

Chen, Liang-Yu; Hunter, Gary W.; Neudeck, Philip G.; Beheim, Glenn M.; Spry, David J.; Meredith, Roger D.

2013-01-01

This paper reviews ceramic substrates and thick-film metallization based packaging technologies in development for 500 C silicon carbide (SiC) electronics and sensors. Prototype high temperature ceramic chip-level packages and printed circuit boards (PCBs) based on ceramic substrates of aluminum oxide (Al2O3) and aluminum nitride (AlN) have been designed and fabricated. These ceramic substrate-based chip-level packages with gold (Au) thick-film metallization have been electrically characterized at temperatures up to 550 C. A 96% alumina based edge connector for a PCB level subsystem interconnection has also been demonstrated recently. The 96% alumina packaging system composed of chip-level packages and PCBs has been tested with high temperature SiC devices at 500 C for over 10,000 hours. In addition to tests in a laboratory environment, a SiC JFET with a packaging system composed of a 96% alumina chip-level package and an alumina printed circuit board mounted on a data acquisition circuit board was launched as a part of the MISSE-7 suite to the International Space Station via a Shuttle mission. This packaged SiC transistor was successfully tested in orbit for eighteen months. A spark-plug type sensor package designed for high temperature SiC capacitive pressure sensors was developed. This sensor package combines the high temperature interconnection system with a commercial high temperature high pressure stainless steel seal gland (electrical feed-through). Test results of a packaged high temperature capacitive pressure sensor at 500 C are also discussed. In addition to the pressure sensor package, efforts for packaging high temperature SiC diode-based gas chemical sensors are in process.

Packaging Technologies for High Temperature Electronics and Sensors

NASA Technical Reports Server (NTRS)

Chen, Liangyu; Hunter, Gary W.; Neudeck, Philip G.; Beheim, Glenn M.; Spry, David J.; Meredith, Roger D.

2013-01-01

This paper reviews ceramic substrates and thick-film metallization based packaging technologies in development for 500degC silicon carbide (SiC) electronics and sensors. Prototype high temperature ceramic chip-level packages and printed circuit boards (PCBs) based on ceramic substrates of aluminum oxide (Al2O3) and aluminum nitride (AlN) have been designed and fabricated. These ceramic substrate-based chiplevel packages with gold (Au) thick-film metallization have been electrically characterized at temperatures up to 550degC. A 96% alumina based edge connector for a PCB level subsystem interconnection has also been demonstrated recently. The 96% alumina packaging system composed of chip-level packages and PCBs has been tested with high temperature SiC devices at 500degC for over 10,000 hours. In addition to tests in a laboratory environment, a SiC JFET with a packaging system composed of a 96% alumina chip-level package and an alumina printed circuit board mounted on a data acquisition circuit board was launched as a part of the MISSE-7 suite to the International Space Station via a Shuttle mission. This packaged SiC transistor was successfully tested in orbit for eighteen months. A spark-plug type sensor package designed for high temperature SiC capacitive pressure sensors was developed. This sensor package combines the high temperature interconnection system with a commercial high temperature high pressure stainless steel seal gland (electrical feed-through). Test results of a packaged high temperature capacitive pressure sensor at 500degC are also discussed. In addition to the pressure sensor package, efforts for packaging high temperature SiC diode-based gas chemical sensors are in process.

The Commercialization of the SiC Flame Sensor

NASA Astrophysics Data System (ADS)

Fedison, Jeffrey B.

2002-03-01

The technical and scientific steps required to produce large quantities of SiC flame sensors is described. The technical challenges required to understand, fabricate, test and package SiC photodiodes in 1990 were numerous since SiC device know how was embryonic. A sense of urgency for a timely replacement of the Geiger Muller gas discharge tube soon entered the scene. New dual fuel GE Power Systems gas turbines, which were designed to lean burn either natural gas or oil for low NOx emissions required a much higher sensitivity sensor. Joint work between GE CRD and Cree Research sponsored by the GE Aircraft Engine Division developed the know how for the fabrication of high sensitivity, high yield, reliable SiC photodiodes. Yield issues were uncovered and overcome. The urgency for system insertion required that SiC diode and sensor circuitry development needed to be carried out simultaneously with power plant field tests of laboratory or prototype sensor assemblies. The sensor and reliability specifications were stringent since the sensors installed on power plant turbine combustor walls are subjected to high levels of vibration, elevated temperatures, and high pressures. Furthermore a fast recovery time was required to sense flame out in spite of the fact that the amplifier circuit needed have high gain and high dynamic range. SiC diode technical difficulties were encountered and overcome. The science of hydrocarbon flames will also be described together with the fortunate overlap of the strong OH emission band with the SiC photodiode sensitivity versus wavelength characteristic. The extremely low dark current (<1pA/cm^2) afforded by the wide band gap and the 3eV sensitivity cutoff at 400nm made if possible to produce low amplifier offsets, high sensitivity and high dynamic range along with immunity to black body radiation from combustor walls. Field tests at power plants that had experienced turbine tripping, whenever oil fuel and/or oil with steam injection for power augmentation, were extremely encouraging. This warrantee problem previously due to the low sensitivity of the Geiger Muller tube was solved using the much higher sensitivity SiC detector. This sensitivity increase is partially due to the fact that the SiC photodiode “sees” the strong OH emission band whereas the Geiger Muller tube can only respond to the shorter wavelength CO emission band. Other successful field tests were observed and acclaimed by power plant operators, which for the first time could track mode switching and power level (flame intensity) because of the high dynamic range (>5000:1). The demand for this product thereupon rose dramatically. This success, the first for SiC devices other than that of SiC blue LEDs, is leading GE to implement this technology in other application fields.

Electronic and optical properties of hydrogenated silicon carbide nanosheets: A DFT study

NASA Astrophysics Data System (ADS)

Delavari, Najmeh; Jafari, Mahmoud

2018-07-01

Density-functional theory has been applied to investigate the effect of hydrogen adsorption on silicon carbide (SiC) nanosheets, considering six, different configurations for adsorption process. The chair-like configuration is found to be the most stable because of the adsorption of hydrogen atoms by silicon and carbon atoms on the opposite sides. The pure and hydrogenated SiC monolayers are also found to be sp2- and sp3-hybridized, respectively. The binding energy of the hydrogen atoms in the chair-like structure is calculated about -3.845 eV, implying the system to be much more stable than the same study based on graphene, though with nearly the same electronic properties, strongly proposing the SiC monolayer to be a promising material for next generation hydrogen storage. Optical properties presented in terms of the real and the imaginary parts of the dielectric function also demonstrate a decrease in the dielectric constant and the static refractive index due to hydrogen adsorption with the Plasmon frequency of the chair-like, hydrogenated monolayer, occurring at higher energies compared to that of the pure one.

Silicon Carbide Sensors and Electronics for Harsh Environment Applications

NASA Technical Reports Server (NTRS)

Evans, Laura J.

2007-01-01

Silicon carbide (SiC) semiconductor has been studied for electronic and sensing applications in extreme environment (high temperature, extreme vibration, harsh chemical media, and high radiation) that is beyond the capability of conventional semiconductors such as silicon. This is due to its near inert chemistry, superior thermomechanical and electronic properties that include high breakdown voltage and wide bandgap. An overview of SiC sensors and electronics work ongoing at NASA Glenn Research Center (NASA GRC) will be presented. The main focus will be two technologies currently being investigated: 1) harsh environment SiC pressure transducers and 2) high temperature SiC electronics. Work highlighted will include the design, fabrication, and application of SiC sensors and electronics, with recent advancements in state-of-the-art discussed as well. These combined technologies are studied for the goal of developing advanced capabilities for measurement and control of aeropropulsion systems, as well as enhancing tools for exploration systems.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Nabeel Riza

This final report contains the main results from a 3-year program to further investigate the merits of SiC-based hybrid sensor designs for extreme environment measurements in gas turbines. The study is divided in three parts. Part 1 studies the material properties of SiC such as temporal response, refractive index change with temperature, and material thermal response reversibility. Sensor data from a combustion rig-test using this SiC sensor technology is analyzed and a robust distributed sensor network design is proposed. Part 2 of the study focuses on introducing redundancy in the sensor signal processing to provide improved temperature measurement robustness. Inmore » this regard, two distinct measurement methods emerge. A first method uses laser wavelength sensitivity of the SiC refractive index behavior and a second method that engages the Black-Body (BB) radiation of the SiC package. Part 3 of the program investigates a new way to measure pressure via a distance measurement technique that applies to hot objects including corrosive fluids.« less

Bare and boron-doped cubic silicon carbide nanowires for electrochemical detection of nitrite sensitively

PubMed Central

Yang, Tao; Zhang, Liqin; Hou, Xinmei; Chen, Junhong; Chou, Kuo-Chih

2016-01-01

Fabrication of eletrochemical sensors based on wide bandgap compound semiconductors has attracted increasing interest in recent years. Here we report for the first time electrochemical nitrite sensors based on cubic silicon carbide (SiC) nanowires (NWs) with smooth surface and boron-doped cubic SiC NWs with fin-like structure. Multiple techniques including scanning electron microscopy (SEM), transmission electron microscopy (TEM), X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS) and electron energy loss spectroscopy (EELS) were used to characterize SiC and boron-doped SiC NWs. As for the electrochemical behavior of both SiC NWs electrode, the cyclic voltammetric results show that both SiC electrodes exhibit wide potential window and excellent electrocatalytic activity toward nitrite oxidation. Differential pulse voltammetry (DPV) determination reveals that there exists a good linear relationship between the oxidation peak current and the concentration in the range of 50–15000 μmoL L−1 (cubic SiC NWs) and 5–8000 μmoL L−1 (B-doped cubic SiC NWs) with the detection limitation of 5 and 0.5 μmoL L−1 respectively. Compared with previously reported results, both as-prepared nitrite sensors exhibit wider linear response range with comparable high sensitivity, high stability and reproducibility. PMID:27109361

Hydrogen generation due to water splitting on Si - terminated 4H-Sic(0001) surfaces

NASA Astrophysics Data System (ADS)

Li, Qingfang; Li, Qiqi; Yang, Cuihong; Rao, Weifeng

2018-02-01

The chemical reactions of hydrogen gas generation via water splitting on Si-terminated 4H-SiC surfaces with or without C/Si vacancies were studied by using first-principles. We studied the reaction mechanisms of hydrogen generation on the 4H-SiC(0001) surface. Our calculations demonstrate that there are major rearrangements in surface when H2O approaches the SiC(0001) surface. The first H splitting from water can occur with ground-state electronic structures. The second H splitting involves an energy barrier of 0.65 eV. However, the energy barrier for two H atoms desorbing from the Si-face and forming H2 gas is 3.04 eV. In addition, it is found that C and Si vacancies can form easier in SiC(0001)surfaces than in SiC bulk and nanoribbons. The C/Si vacancies introduced can enhance photocatalytic activities. It is easier to split OH on SiC(0001) surface with vacancies compared to the case of clean SiC surface. H2 can form on the 4H-SiC(0001) surface with C and Si vacancies if the energy barriers of 1.02 and 2.28 eV are surmounted, respectively. Therefore, SiC(0001) surface with C vacancy has potential applications in photocatalytic water-splitting.

High Temperature Electronics for Intelligent Harsh Environment Sensors

NASA Technical Reports Server (NTRS)

Evans, Laura J.

2008-01-01

The development of intelligent instrumentation systems is of high interest in both public and private sectors. In order to obtain this ideal in extreme environments (i.e., high temperature, extreme vibration, harsh chemical media, and high radiation), both sensors and electronics must be developed concurrently in order that the entire system will survive for extended periods of time. The semiconductor silicon carbide (SiC) has been studied for electronic and sensing applications in extreme environment that is beyond the capability of conventional semiconductors such as silicon. The advantages of SiC over conventional materials include its near inert chemistry, superior thermomechanical properties in harsh environments, and electronic properties that include high breakdown voltage and wide bandgap. An overview of SiC sensors and electronics work ongoing at NASA Glenn Research Center (NASA GRC) will be presented. The main focus will be two technologies currently being investigated: 1) harsh environment SiC pressure transducers and 2) high temperature SiC electronics. Work highlighted will include the design, fabrication, and application of SiC sensors and electronics, with recent advancements in state-of-the-art discussed as well. These combined technologies are studied for the goal of developing advanced capabilities for measurement and control of aeropropulsion systems, as well as enhancing tools for exploration systems.

Optimal base station placement for wireless sensor networks with successive interference cancellation.

PubMed

Shi, Lei; Zhang, Jianjun; Shi, Yi; Ding, Xu; Wei, Zhenchun

2015-01-14

We consider the base station placement problem for wireless sensor networks with successive interference cancellation (SIC) to improve throughput. We build a mathematical model for SIC. Although this model cannot be solved directly, it enables us to identify a necessary condition for SIC on distances from sensor nodes to the base station. Based on this relationship, we propose to divide the feasible region of the base station into small pieces and choose a point within each piece for base station placement. The point with the largest throughput is identified as the solution. The complexity of this algorithm is polynomial. Simulation results show that this algorithm can achieve about 25% improvement compared with the case that the base station is placed at the center of the network coverage area when using SIC.

Packaging Technology for SiC High Temperature Electronics

NASA Technical Reports Server (NTRS)

Chen, Liang-Yu; Neudeck, Philip G.; Spry, David J.; Meredith, Roger D.; Nakley, Leah M.; Beheim, Glenn M.; Hunter, Gary W.

2017-01-01

High-temperature environment operable sensors and electronics are required for long-term exploration of Venus and distributed control of next generation aeronautical engines. Various silicon carbide (SiC) high temperature sensors, actuators, and electronics have been demonstrated at and above 500 C. A compatible packaging system is essential for long-term testing and application of high temperature electronics and sensors in relevant environments. This talk will discuss a ceramic packaging system developed for high temperature electronics, and related testing results of SiC integrated circuits at 500 C facilitated by this high temperature packaging system, including the most recent progress.

Optimal Base Station Placement for Wireless Sensor Networks with Successive Interference Cancellation

PubMed Central

Shi, Lei; Zhang, Jianjun; Shi, Yi; Ding, Xu; Wei, Zhenchun

2015-01-01

We consider the base station placement problem for wireless sensor networks with successive interference cancellation (SIC) to improve throughput. We build a mathematical model for SIC. Although this model cannot be solved directly, it enables us to identify a necessary condition for SIC on distances from sensor nodes to the base station. Based on this relationship, we propose to divide the feasible region of the base station into small pieces and choose a point within each piece for base station placement. The point with the largest throughput is identified as the solution. The complexity of this algorithm is polynomial. Simulation results show that this algorithm can achieve about 25% improvement compared with the case that the base station is placed at the center of the network coverage area when using SIC. PMID:25594600

Electronic and Interfacial Properties of PD/6H-SiC Schottky Diode Gas Sensors

NASA Technical Reports Server (NTRS)

Chen, Liang-Yu; Hunter, Gary W.; Neudeck, Philip G.; Bansal, Gaurav; Petit, Jeremy B.; Knight, Dak; Liu, Chung-Chiun; Wu, Qinghai

1996-01-01

Pd/SiC Schottky diodes detect hydrogen and hydrocarbons with high sensitivity. Variation of the diode temperature from 100 C to 200 C shows that the diode sensitivity to propylene is temperature dependent. Long-term heat treating at 425 C up to 140 hours is carried out to determine the effect of extended heat treating on the diode properties and gas sensitivity. The heat treating significantly affects the diode's capacitive characteristics, but the diode's current carrying characteristics are much more stable with a large response to hydrogen. Scanning Electron Microscopy and X-ray Spectrometry studies of the Pd surface after the heating show cluster formation and background regions with grain structure observed in both regions. The Pd and Si concentrations vary between grains. Auger Electron Spectroscopy depth profiles revealed that the heat treating promoted interdiffusion and reaction between the Pd and SiC dw broadened the interface region. This work shows that Pd/SiC Schottky diodes have significant potential as high temperature gas sensors, but stabilization of the structure is necessary to insure their repeatability in long-term, high temperature applications.

Extreme temperature robust optical sensor designs and fault-tolerant signal processing

DOEpatents

Riza, Nabeel Agha [Oviedo, FL; Perez, Frank [Tujunga, CA

2012-01-17

Silicon Carbide (SiC) probe designs for extreme temperature and pressure sensing uses a single crystal SiC optical chip encased in a sintered SiC material probe. The SiC chip may be protected for high temperature only use or exposed for both temperature and pressure sensing. Hybrid signal processing techniques allow fault-tolerant extreme temperature sensing. Wavelength peak-to-peak (or null-to-null) collective spectrum spread measurement to detect wavelength peak/null shift measurement forms a coarse-fine temperature measurement using broadband spectrum monitoring. The SiC probe frontend acts as a stable emissivity Black-body radiator and monitoring the shift in radiation spectrum enables a pyrometer. This application combines all-SiC pyrometry with thick SiC etalon laser interferometry within a free-spectral range to form a coarse-fine temperature measurement sensor. RF notch filtering techniques improve the sensitivity of the temperature measurement where fine spectral shift or spectrum measurements are needed to deduce temperature.

Chemical Vapor Deposition Of Silicon Carbide

NASA Technical Reports Server (NTRS)

Powell, J. Anthony; Larkin, David J.; Matus, Lawrence G.; Petit, Jeremy B.

1993-01-01

Large single-crystal SiC boules from which wafers of large area cut now being produced commerically. Availability of wafers opens door for development of SiC semiconductor devices. Recently developed chemical vapor deposition (CVD) process produces thin single-crystal SiC films on SiC wafers. Essential step in sequence of steps used to fabricate semiconductor devices. Further development required for specific devices. Some potential high-temperature applications include sensors and control electronics for advanced turbine engines and automobile engines, power electronics for electromechanical actuators for advanced aircraft and for space power systems, and equipment used in drilling of deep wells. High-frequency applications include communication systems, high-speed computers, and microwave power transistors. High-radiation applications include sensors and controls for nuclear reactors.

Residual stress in thick low-pressure chemical-vapor deposited polycrystalline SiC coatings on Si substrates

NASA Astrophysics Data System (ADS)

Choi, D.; Shinavski, R. J.; Steffier, W. S.; Spearing, S. M.

2005-04-01

Residual stress in thick coatings of polycrystalline chemical-vapor deposited SiC on Si substrates is a key variable that must be controlled if SiC is to be used in microelectromechanical systems. Studies have been conducted to characterize the residual stress level as a function of deposition temperature, Si wafer and SiC coating thickness, and the ratios of methyltrichlorosilane to hydrogen and hydrogen chloride. Wafer curvature was used to monitor residual stress in combination with a laminated plate analysis. Compressive intrinsic (growth) stresses were measured with magnitudes in the range of 200-300MPa; however, these can be balanced with the tensile stress due to the thermal-expansion mismatch to leave near-zero stress at room temperature. The magnitude of the compressive intrinsic stress is consistent with previously reported values of surface stress in combination with the competition between grain-boundary energy and elastic strain energy.

Fabrication of All-SiC Fiber-Optic Pressure Sensors for High-Temperature Applications

PubMed Central

Jiang, Yonggang; Li, Jian; Zhou, Zhiwen; Jiang, Xinggang; Zhang, Deyuan

2016-01-01

Single-crystal silicon carbide (SiC)-based pressure sensors can be used in harsh environments, as they exhibit stable mechanical and electrical properties at elevated temperatures. A fiber-optic pressure sensor with an all-SiC sensor head was fabricated and is herein proposed. SiC sensor diaphragms were fabricated via an ultrasonic vibration mill-grinding (UVMG) method, which resulted in a small grinding force and low surface roughness. The sensor head was formed by hermetically bonding two layers of SiC using a nickel diffusion bonding method. The pressure sensor illustrated a good linearity in the range of 0.1–0.9 MPa, with a resolution of 0.27% F.S. (full scale) at room temperature. PMID:27763494

Fabrication of All-SiC Fiber-Optic Pressure Sensors for High-Temperature Applications.

PubMed

Jiang, Yonggang; Li, Jian; Zhou, Zhiwen; Jiang, Xinggang; Zhang, Deyuan

2016-10-17

Single-crystal silicon carbide (SiC)-based pressure sensors can be used in harsh environments, as they exhibit stable mechanical and electrical properties at elevated temperatures. A fiber-optic pressure sensor with an all-SiC sensor head was fabricated and is herein proposed. SiC sensor diaphragms were fabricated via an ultrasonic vibration mill-grinding (UVMG) method, which resulted in a small grinding force and low surface roughness. The sensor head was formed by hermetically bonding two layers of SiC using a nickel diffusion bonding method. The pressure sensor illustrated a good linearity in the range of 0.1-0.9 MPa, with a resolution of 0.27% F.S. (full scale) at room temperature.

Quasi free-standing epitaxial graphene fabrication on 3C-SiC/Si(111)

NASA Astrophysics Data System (ADS)

Amjadipour, Mojtaba; Tadich, Anton; Boeckl, John J.; Lipton-Duffin, Josh; MacLeod, Jennifer; Iacopi, Francesca; Motta, Nunzio

2018-04-01

Growing graphene on SiC thin films on Si is a cheaper alternative to the growth on bulk SiC, and for this reason it has been recently intensively investigated. Here we study the effect of hydrogen intercalation on epitaxial graphene obtained by high temperature annealing on 3C-SiC/Si(111) in ultra-high vacuum. By using a combination of core-level photoelectron spectroscopy, low energy electron diffraction, and near-edge x-ray absorption fine structure (NEXAFS) we find that hydrogen saturates the Si atoms at the topmost layer of the substrate, leading to free-standing graphene on 3C-SiC/Si(111). The intercalated hydrogen fully desorbs after heating the sample at 850 °C and the buffer layer appears again, similar to what has been reported for bulk SiC. However, the NEXAFS analysis sheds new light on the effect of hydrogen intercalation, showing an improvement of graphene’s flatness after annealing in atomic H at 600 °C. These results provide new insight into free-standing graphene fabrication on SiC/Si thin films.

Structural consequences of hydrogen intercalation of epitaxial graphene on SiC(0001)

DOE Office of Scientific and Technical Information (OSTI.GOV)

Emery, Jonathan D., E-mail: jdemery@anl.gov, E-mail: bedzyk@northwestern.edu; Johns, James E.; McBriarty, Martin E.

2014-10-20

The intercalation of various atomic species, such as hydrogen, to the interface between epitaxial graphene (EG) and its SiC substrate is known to significantly influence the electronic properties of the graphene overlayers. Here, we use high-resolution X-ray reflectivity to investigate the structural consequences of the hydrogen intercalation process used in the formation of quasi-free-standing (QFS) EG/SiC(0001). We confirm that the interfacial layer is converted to a layer structurally indistinguishable from that of the overlying graphene layers. This newly formed graphene layer becomes decoupled from the SiC substrate and, along with the other graphene layers within the film, is vertically displacedmore » by ∼2.1 Å. The number of total carbon layers is conserved during the process, and we observe no other structural changes such as interlayer intercalation or expansion of the graphene d-spacing. These results clarify the under-determined structure of hydrogen intercalated QFS-EG/SiC(0001) and provide a precise model to inform further fundamental and practical understanding of the system.« less

High-temperature effect of hydrogen on sintered alpha-silicon carbide

NASA Technical Reports Server (NTRS)

Hallum, G. W.; Herbell, T. P.

1986-01-01

Sintered alpha-silicon carbide was exposed to pure, dry hydrogen at high temperatures for times up to 500 hr. Weight loss and corrosion were seen after 50 hr at temperatures as low as 1000 C. Corrosion of SiC by hydrogen produced grain boundary deterioration at 1100 C and a mixture of grain and grain boundary deterioration at 1300 C. Statistically significant strength reductions were seen in samples exposed to hydrogen for times greater than 50 hr and temperatures above 1100 C. Critical fracture origins were identified by fractography as either general grain boundary corrision at 1100 C or as corrosion pits at 1300 C. A maximum strength decrease of approximately 33 percent was seen at 1100 and 1300 C after 500 hr exposure to hydrogen. A computer assisted thermodynamic program was also used to predict possible reaction species of SiC and hydrogen.

Effect of high-temperature hydrogen exposure on sintered alpha-SiC

NASA Technical Reports Server (NTRS)

Hallum, Gary W.; Herbell, Thomas P.

1988-01-01

Sintered alpha-silicon carbide was exposed to pure, dry hydrogen at high temperatures for times up to 500 hr. Weight loss and corrosion were seen after 50 hr at temperatures as low as 1000 C. Corrosion of SiC by hydrogen produced grain boundary deterioration at 1100 C and a mixture of grain and grain boundary deterioration at 1300 C. Statistically significant strength reductions were seen in samples exposed to hydrogen for times greater than 50 hr and temperatures above 1100 C. Critical fracture origins were identified by fractography as either general grain boundary corrosion at 1100 C or as corrosion pits at 1300 C. A maximum strength decrease of approximately 33 percent was seen at 1100 and 1300 C after 500 hr exposure to hydrogen. A computer assisted thermodynamic program was also used to predict possible reaction species of SiC and hydrogen.

500 C Electronic Packaging and Dielectric Materials for High Temperature Applications

NASA Technical Reports Server (NTRS)

Chen, Liang-yu; Neudeck, Philip G.; Spry, David J.; Beheim, Glenn M.; Hunter, Gary W.

2016-01-01

High-temperature environment operable sensors and electronics are required for exploring the inner solar planets and distributed control of next generation aeronautical engines. Various silicon carbide (SiC) high temperature sensors, actuators, and electronics have been demonstrated at and above 500C. A compatible packaging system is essential for long-term testing and application of high temperature electronics and sensors. High temperature passive components are also necessary for high temperature electronic systems. This talk will discuss ceramic packaging systems developed for high temperature electronics, and related testing results of SiC circuits at 500C and silicon-on-insulator (SOI) integrated circuits at temperatures beyond commercial limit facilitated by these high temperature packaging technologies. Dielectric materials for high temperature multilayers capacitors will also be discussed. High-temperature environment operable sensors and electronics are required for probing the inner solar planets and distributed control of next generation aeronautical engines. Various silicon carbide (SiC) high temperature sensors, actuators, and electronics have been demonstrated at and above 500C. A compatible packaging system is essential for long-term testing and eventual applications of high temperature electronics and sensors. High temperature passive components are also necessary for high temperature electronic systems. This talk will discuss ceramic packaging systems developed for high electronics and related testing results of SiC circuits at 500C and silicon-on-insulator (SOI) integrated circuits at temperatures beyond commercial limit facilitated by high temperature packaging technologies. Dielectric materials for high temperature multilayers capacitors will also be discussed.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Nabeel Riza

In this program, Nuonics, Inc. has studied the fundamentals of a new Silicon Carbide (SiC) materials-based optical sensor technology suited for extreme environments of coal-fired engines in power production. The program explored how SiC could be used for sensing temperature, pressure, and potential gas species in a gas turbine environment. The program successfully demonstrated the optical designs, signal processing and experimental data for enabling both temperature and pressure sensing using SiC materials. The program via its sub-contractors also explored gas species sensing using SiC, in this case, no clear commercially deployable method was proven. Extensive temperature and pressure measurement datamore » using the proposed SiC sensors was acquired to 1000 deg-C and 40 atms, respectively. Importantly, a first time packaged all-SiC probe design was successfully operated in a Siemens industrial turbine rig facility with the probe surviving the harsh chemical, pressure, and temperature environment during 28 days of test operations. The probe also survived a 1600 deg-C thermal shock test using an industrial flame.« less

High Temperature Pt/Alumina Co-Fired System for 500 C Electronic Packaging Applications

NASA Technical Reports Server (NTRS)

Chen, Liang-Yu; Neudeck, Philip G.; Spry, David J.; Beheim, Glenn M.; Hunter, Gary W.

2015-01-01

Gold thick-film metallization and 96 alumina substrate based prototype packaging system developed for 500C SiC electronics and sensors is briefly reviewed, the needs of improvement are discussed. A high temperature co-fired alumina material system based packaging system composed of 32-pin chip-level package and printed circuit board is discussed for packaging 500C SiC electronics and sensors.

A High Frequency (HF) Inductive Power Transfer Circuit for High Temperature Applications Using SiC Schottky Diodes

NASA Technical Reports Server (NTRS)

Jordan, Jennifer L.; Ponchak, George E.; Spry, David J.; Neudeck, Philip G.

2018-01-01

Wireless sensors placed in high temperature environments, such as aircraft engines, are desirable to reduce the mass and complexity of routing wires. While communication with the sensors is straight forward, providing power wirelessly is still a challenge. This paper introduces an inductive wireless power transfer circuit incorporating SiC Schottky diodes and its operation from room temperature (25 C) to 500 C.

Promising SiC support for Pd catalyst in selective hydrogenation of acetylene to ethylene

NASA Astrophysics Data System (ADS)

Guo, Zhanglong; Liu, Yuefeng; Liu, Yan; Chu, Wei

2018-06-01

In this study, SiC supported Pd nanoparticles were found to be an efficient catalyst in acetylene selective hydrogenation reaction. The ethylene selectivity can be about 20% higher than that on Pd/TiO2 catalyst at the same acetylene conversion at 90%. Moreover, Pd/SiC catalyst showed a stable catalytic life at 65 °C with 80% ethylene selectivity. With the detailed characterization using temperature-programmed reduction (H2-TPR), powder X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS), N2 adsorption/desorption analysis, CO-chemisorption and thermo-gravimetric analysis (TGA), it was found that SiC owns a lower surface area (22.9 m2/g) and a broad distribution of meso-/macro-porosity (from 5 to 65 nm), which enhanced the mass transfer during the chemical process at high reaction rate and decreased the residence time of ethylene on catalyst surface. Importantly, SiC support has the high thermal conductivity, which favored the rapid temperature homogenization through the catalyst bed and inhabited the over-hydrogenation of acetylene. The surface electronic density of Pd on Pd/SiC catalyst was higher than that on Pd/TiO2, which could promote desorption of ethylene from surface of the catalyst. TGA results confirmed a much less coke deposition on Pd/SiC catalyst.

Packaging Technologies for 500 C SiC Electronics and Sensors: Challenges in Material Science and Technology

NASA Technical Reports Server (NTRS)

Chen, Liang-Yu; Neudeck, Philip G.; Behelm, Glenn M.; Spry, David J.; Meredith, Roger D.; Hunter, Gary W.

2015-01-01

This paper presents ceramic substrates and thick-film metallization based packaging technologies in development for 500C silicon carbide (SiC) electronics and sensors. Prototype high temperature ceramic chip-level packages and printed circuit boards (PCBs) based on ceramic substrates of aluminum oxide (Al2O3) and aluminum nitride (AlN) have been designed and fabricated. These ceramic substrate-based chip-level packages with gold (Au) thick-film metallization have been electrically characterized at temperatures up to 550C. The 96 alumina packaging system composed of chip-level packages and PCBs has been successfully tested with high temperature SiC discrete transistor devices at 500C for over 10,000 hours. In addition to tests in a laboratory environment, a SiC junction field-effect-transistor (JFET) with a packaging system composed of a 96 alumina chip-level package and an alumina printed circuit board was tested on low earth orbit for eighteen months via a NASA International Space Station experiment. In addition to packaging systems for electronics, a spark-plug type sensor package based on this high temperature interconnection system for high temperature SiC capacitive pressure sensors was also developed and tested. In order to further significantly improve the performance of packaging system for higher packaging density, higher operation frequency, power rating, and even higher temperatures, some fundamental material challenges must be addressed. This presentation will discuss previous development and some of the challenges in material science (technology) to improve high temperature dielectrics for packaging applications.

Wafer-scale epitaxial graphene on SiC for sensing applications

NASA Astrophysics Data System (ADS)

Karlsson, Mikael; Wang, Qin; Zhao, Yichen; Zhao, Wei; Toprak, Muhammet S.; Iakimov, Tihomir; Ali, Amer; Yakimova, Rositza; Syväjärvi, Mikael; Ivanov, Ivan G.

2015-12-01

The epitaxial graphene-on-silicon carbide (SiC-G) has advantages of high quality and large area coverage owing to a natural interface between graphene and SiC substrate with dimension up to 100 mm. It enables cost effective and reliable solutions for bridging the graphene-based sensors/devices from lab to industrial applications and commercialization. In this work, the structural, optical and electrical properties of wafer-scale graphene grown on 2'' 4H semi-insulating (SI) SiC utilizing sublimation process were systemically investigated with focus on evaluation of the graphene's uniformity across the wafer. As proof of concept, two types of glucose sensors based on SiC-G/Nafion/Glucose-oxidase (GOx) and SiC-G/Nafion/Chitosan/GOx were fabricated and their electrochemical properties were characterized by cyclic voltammetry (CV) measurements. In addition, a few similar glucose sensors based on graphene by chemical synthesis using modified Hummer's method were also fabricated for comparison.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Nabeel A. Riza

The goals of the first six months of this project were to begin laying the foundations for both the SiC front-end optical chip fabrication techniques for high pressure gas species sensing as well as the design, assembly, and test of a portable high pressure high temperature calibration test cell chamber for introducing gas species. This calibration cell will be used in the remaining months for proposed first stage high pressure high temperature gas species sensor experimentation and data processing. All these goals have been achieved and are described in detail in the report. Both design process and diagrams for themore » mechanical elements as well as the optical systems are provided. Photographs of the fabricated calibration test chamber cell, the optical sensor setup with the calibration cell, the SiC sample chip holder, and relevant signal processing mathematics are provided. Initial experimental data from both the optical sensor and fabricated test gas species SiC chips is provided. The design and experimentation results are summarized to give positive conclusions on the proposed novel high temperature high pressure gas species detection optical sensor technology.« less

Deep Etching Process Developed for the Fabrication of Silicon Carbide Microsystems

NASA Technical Reports Server (NTRS)

Beheim, Glenn M.

2000-01-01

Silicon carbide (SiC), because of its superior electrical and mechanical properties at elevated temperatures, is a nearly ideal material for the microminiature sensors and actuators that are used in harsh environments where temperatures may reach 600 C or greater. Deep etching using plasma methods is one of the key processes used to fabricate silicon microsystems for more benign environments, but SiC has proven to be a more difficult material to etch, and etch depths in SiC have been limited to several micrometers. Recently, the Sensors and Electronics Technology Branch at the NASA Glenn Research Center at Lewis Field developed a plasma etching process that was shown to be capable of etching SiC to a depth of 60 mm. Deep etching of SiC is achieved by inductive coupling of radiofrequency electrical energy to a sulfur hexafluoride (SF6) plasma to direct a high flux of energetic ions and reactive fluorine atoms to the SiC surface. The plasma etch is performed at a low pressure, 5 mtorr, which together with a high gas throughput, provides for rapid removal of the gaseous etch products. The lateral topology of the SiC microstructure is defined by a thin film of etch-resistant material, such as indium-tin-oxide, which is patterned using conventional photolithographic processes. Ions from the plasma bombard the exposed SiC surfaces and supply the energy needed to initiate a reaction between SiC and atomic fluorine. In the absence of ion bombardment, no reaction occurs, so surfaces perpendicular to the wafer surface (the etch sidewalls) are etched slowly, yielding the desired vertical sidewalls.

Influence of the hydrogen bond quantum nature in liquid water and heavy water on stimulated Raman scattering

NASA Astrophysics Data System (ADS)

Li, Fabing; Li, Zhanlong; Li, Shuo; Fang, Wenhui; Sun, Chenglin; Men, Zhiwei

2018-06-01

Stimulated Raman scattering (SRS) of liquid water and heavy water have been investigated using Nd:YAG laser. The SRS spectra of liquid heavy water indicate that ice-VII and ice-VIII structures are formed by shock-induced compression (SIC) in forward and backward directions, respectively. Simultaneously, the SRS spectra reveal of liquid water that only ice-VII structure is formed in the backward direction. The difference in ice structures formed by SIC in liquid water and heavy water could be attributed to the effect of the hydrogen bond quantum nature with H+. SRS spectra of 2 M NaOH water solution with ice-VII and ice-VIII structures have been successfully obtained in forward and backward, respectively, as OH- greatly reduce the quantum nature of hydrogen bonds by neutralizing H+ in water. The hydrogen bond quantum nature is important for understanding isotope calibration test structure and isotopic effect.

A silicon carbide nanowire field effect transistor for DNA detection

NASA Astrophysics Data System (ADS)

Fradetal, L.; Bano, E.; Attolini, G.; Rossi, F.; Stambouli, V.

2016-06-01

This work reports on the label-free electrical detection of DNA molecules for the first time, using silicon carbide (SiC) as a novel material for the realization of nanowire field effect transistors (NWFETs). SiC is a promising semiconductor for this application due to its specific characteristics such as chemical inertness and biocompatibility. Non-intentionally n-doped SiC NWs are first grown using a bottom-up vapor-liquid-solid (VLS) mechanism, leading to the NWs exhibiting needle-shaped morphology, with a length of approximately 2 μm and a diameter ranging from 25 to 60 nm. Then, the SiC NWFETs are fabricated and functionalized with DNA molecule probes via covalent coupling using an amino-terminated organosilane. The drain current versus drain voltage (I d-V d) characteristics obtained after the DNA grafting and hybridization are reported from the comparative and simultaneous measurements carried out on the SiC NWFETs, used either as sensors or references. As a representative result, the current of the sensor is lowered by 22% after probe DNA grafting and by 7% after target DNA hybridization, while the current of the reference does not vary by more than ±0.6%. The current decrease confirms the field effect induced by the negative charges of the DNA molecules. Moreover, the selectivity, reproducibility, reversibility and stability of the studied devices are emphasized by de-hybridization, non-complementary hybridization and re-hybridization experiments. This first proof of concept opens the way for future developments using SiC-NW-based sensors.

Measured Attenuation of Coplanar Waveguide on 6H, p-type SiC and High Purity Semi-Insulating 4H SiC through 800 K

NASA Technical Reports Server (NTRS)

Ponchak, George E.; Schwartz, Zachary D.; Alterovitz, Samuel A.; Downey, Alan N.

2004-01-01

Wireless sensors for high temperature applications such as oil drilling and mining, automobiles, and jet engine performance monitoring require circuits built on wide bandgap semiconductors. In this paper, the characteristics of microwave transmission lines on 4H-High Purity Semi-Insulating SiC and 6H, p-type SiC is presented as a function of temperature and frequency. It is shown that the attenuation of 6H, p-type substrates is too high for microwave circuits, large leakage current will flow through the substrate, and that unusual attenuation characteristics are due to trapping in the SiC. The 4H-HPSI SiC is shown to have low attenuation and leakage currents over the entire temperature range.

A Silicon Carbide Wireless Temperature Sensing System for High Temperature Applications

PubMed Central

Yang, Jie

2013-01-01

In this article, an extreme environment-capable temperature sensing system based on state-of-art silicon carbide (SiC) wireless electronics is presented. In conjunction with a Pt-Pb thermocouple, the SiC wireless sensor suite is operable at 450 °C while under centrifugal load greater than 1,000 g. This SiC wireless temperature sensing system is designed to be non-intrusively embedded inside the gas turbine generators, acquiring the temperature information of critical components such as turbine blades, and wirelessly transmitting the information to the receiver located outside the turbine engine. A prototype system was developed and verified up to 450 °C through high temperature lab testing. The combination of the extreme temperature SiC wireless telemetry technology and integrated harsh environment sensors will allow for condition-based in-situ maintenance of power generators and aircraft turbines in field operation, and can be applied in many other industries requiring extreme environment monitoring and maintenance. PMID:23377189

Optimization of Thermal Neutron Converter in SiC Sensors for Spectral Radiation Measurements

DOE Office of Scientific and Technical Information (OSTI.GOV)

Krolikowski, Igor; Cetnar, Jerzy; Issa, Fatima

2015-07-01

Optimization of the neutron converter in SiC sensors is presented. The sensors are used for spectral radiation measurements of thermal and fast neutrons and optionally gamma ray at elevated temperature in harsh radiation environment. The neutron converter, which is based on 10B, allows to detect thermal neutrons by means of neutron capture reaction. Two construction of the sensors were used to measure radiation in experiments. Sensor responses collected in experiments have been reproduced by the computer tool created by authors, it allows to validate the tool. The tool creates the response matrix function describing the characteristic of the sensors andmore » it was used for detailed analyses of the sensor responses. Obtained results help to optimize the neutron converter in order to increase thermal neutron detection. Several enhanced construction of the sensors, which includes the neutron converter based on {sup 10}B or {sup 6}Li, were proposed. (authors)« less

Epitaxial growth of 6H silicon carbide in the temperature range 1320 C to 1390 C

NASA Technical Reports Server (NTRS)

Will, H. A.; Powell, J. A.

1974-01-01

High-quality epitaxial layers of 6H SiC have been grown on 6H SiC substrates with the grown direction perpendicular to the crystal c-axis. The growth was by chemical vapor deposition from methyltrichlorosilane (CH3SiCl3) in hydrogen at temperatures in the range of 1320 to 1390 C. Epitaxial layers up to 80 microns thick were grown at rates of 0.4 microns/min. Attempts at growth on the (0001) plane of 6H SiC substrates under similar conditions resulted in polycrystalline cubic SiC layers. Optical and X-ray diffraction techniques were used to characterize the grown layers.

Nanocrystalline SiC film thermistors for cryogenic applications

NASA Astrophysics Data System (ADS)

Mitin, V. F.; Kholevchuk, V. V.; Semenov, A. V.; Kozlovskii, A. A.; Boltovets, N. S.; Krivutsa, V. A.; Slepova, A. S.; Novitskii, S. V.

2018-02-01

We developed a heat-sensitive material based on nanocrystalline SiC films obtained by direct deposition of carbon and silicon ions onto sapphire substrates. These SiC films can be used for resistance thermometers operating in the 2 K-300 K temperature range. Having high heat sensitivity, they are relatively low sensitive to the magnetic field. The designs of the sensors are presented together with a discussion of their thermometric characteristics and sensitivity to magnetic fields.

Stable oxygen and hydrogen isotope analyses of bowhead whale baleen as biochemical recorders of migration and arctic environmental change

NASA Astrophysics Data System (ADS)

deHart, Pieter A. P.; Picco, Candace M.

2015-06-01

An analysis of the stable isotopes of oxygen (δ18O) and hydrogen (δD) was used to examine the linkage between sea ice concentration and the migration of western arctic bowhead whales (Balaena mysticetus; WABW). We compared δ18O and δD variability along the length of WABW baleen with isotopic values of zooplankton prey from different WABW habitat, with published δ13C and δ15N data, and with historical sea ice records. Zooplankton signatures varied widely (δ18O = -13‰-56‰; δD = -220‰ to -75‰), with regional separation between winter (Bering Sea) and summer (eastern Beaufort Sea) habitats of WABW observable in δD. The δ18O and δD of WABW varied significantly along the length of baleen (δ18O = 8-18‰; δD = -180 to -80‰), confirming seasonal migration and reflecting distinct regional dietary variation in isotopes. WABW migration appears to have varied concomitant with temporal sea ice concentration (SIC) changes; in years with high SIC, the difference in δD of WABW baleen between seasonal habitats was significantly greater than low SIC periods. This work shows that SIC is not only a determinant of habitat accessibility for WABW, but baleen may also be a record of historical SIC and Arctic climate.

Durability Evaluation of a Thin Film Sensor System With Enhanced Lead Wire Attachments on SiC/SiC Ceramic Matrix Composites

NASA Technical Reports Server (NTRS)

Lei, Jih-Fen; Kiser, J. Douglas; Singh, Mrityunjay; Cuy, Mike; Blaha, Charles A.; Androjna, Drago

2000-01-01

An advanced thin film sensor system instrumented on silicon carbide (SiC) fiber reinforced SiC matrix ceramic matrix composites (SiC/SiC CMCs), was evaluated in a Mach 0.3 burner rig in order to determine its durability to monitor material/component surface temperature in harsh environments. The sensor system included thermocouples in a thin film form (5 microns thick), fine lead wires (75 microns diameter), and the bonds between these wires and the thin films. Other critical components of the overall system were the heavy, swaged lead wire cable (500 microns diameter) that contained the fine lead wires and was connected to the temperature readout, and ceramic attachments which were bonded onto the CMCs for the purpose of securing the lead wire cables, The newly developed ceramic attachment features a combination of hoops made of monolithic SiC or SiC/SiC CMC (which are joined to the test article) and high temperature ceramic cement. Two instrumented CMC panels were tested in a burner rig for a total of 40 cycles to 1150 C (2100 F). A cycle consisted of rapid heating to 1150 C (2100 F), a 5 minute hold at 1150 C (2100 F), and then cooling down to room temperature in 2 minutes. The thin film sensor systems provided repeatable temperature measurements for a maximum of 25 thermal cycles. Two of the monolithic SiC hoops debonded during the sensor fabrication process and two of the SiC/SiC CMC hoops failed during testing. The hoops filled with ceramic cement, however, showed no sign of detachment after 40 thermal cycle test. The primary failure mechanism of this sensor system was the loss of the fine lead wire-to-thin film connection, which either due to detachment of the fine lead wires from the thin film thermocouples or breakage of the fine wire.

Conformal Thin Film Packaging for SiC Sensor Circuits in Harsh Environments

NASA Technical Reports Server (NTRS)

Scardelletti, Maximilian C.; Karnick, David A.; Ponchak, George E.; Zorman, Christian A.

2011-01-01

In this investigation sputtered silicon carbide annealed at 300 C for one hour is used as a conformal thin film package. A RF magnetron sputterer was used to deposit 500 nm silicon carbide films on gold metal structures on alumina wafers. To determine the reliability and resistance to immersion in harsh environments, samples were submerged in gold etchant for 24 hours, in BOE for 24 hours, and in an O2 plasma etch for one hour. The adhesion strength of the thin film was measured by a pull test before and after the chemical immersion, which indicated that the film has an adhesion strength better than 10(exp 8) N/m2; this is similar to the adhesion of the gold layer to the alumina wafer. MIM capacitors are used to determine the dielectric constant, which is dependent on the SiC anneal temperature. Finally, to demonstrate that the SiC, conformal, thin film may be used to package RF circuits and sensors, an LC resonator circuit was fabricated and tested with and without the conformal SiC thin film packaging. The results indicate that the SiC coating adds no appreciable degradation to the circuits RF performance. Index Terms Sputter, silicon carbide, MIM capacitors, LC resonators, gold etchants, BOE, O2 plasma

Planar SiC MEMS flame ionization sensor for in-engine monitoring

NASA Astrophysics Data System (ADS)

Rolfe, D. A.; Wodin-Schwartz, S.; Alonso, R.; Pisano, A. P.

2013-12-01

A novel planar silicon carbide (SiC) MEMS flame ionization sensor was developed, fabricated and tested to measure the presence of a flame from the surface of an engine or other cooled surface while withstanding the high temperature and soot of a combustion environment. Silicon carbide, a ceramic semiconductor, was chosen as the sensor material because it has low surface energy and excellent mechanical and electrical properties at high temperatures. The sensor measures the conductivity of scattered charge carriers in the flame's quenching layer. This allows for flame detection, even when the sensor is situated several millimetres from the flame region. The sensor has been shown to detect the ionization of premixed methane and butane flames in a wide temperature range starting from room temperature. The sensors can measure both the flame chemi-ionization and the deposition of water vapour on the sensor surface. The width and speed of a premixed methane laminar flame front were measured with a series of two sensors fabricated on a single die. This research points to the feasibility of using either single sensors or arrays in internal combustion engine cylinders to optimize engine performance, or for using sensors to monitor flame stability in gas turbine applications.

Design and fabrication of a differential scanning nanocalorimeter

NASA Astrophysics Data System (ADS)

Zuo, Lei; Chen, Xiaoming; Yu, Shifeng; Lu, Ming

2017-02-01

This paper describes the design, fabrication, and characterization of a differential scanning nanocalorimeter that significantly reduces the sample volume to microliters and can potentially improve the temperature sensitivity to 10 µK. The nanocalorimeter consists of a polymeric freestanding membrane, four high-sensitive low-noise thermistors based on silicon carbide (SiC), and a platinum heater and temperature sensor. With the integrated heater and sensors, temperature scanning and power compensation can be achieved for calorimetric measurement. Temperature sensing SiC film was prepared by using sintered SiC target and DC magnetron sputtering under different gas pressures and sputtering power. The SiC sensing material is characterized through the measurement of current-voltage curves and noise levels. The thermal performance of a fabricated nanocalorimeter is studied in simulation and experiment. The experiment results show the device has excellent thermal isolation to hold thermal energy. The noise test together with the simulation show the device is promising for micro 10 µK temperature sensitivity and nanowatt resolution which will lead to low-volume ultra-sensitive nanocalorimetry for biological processes, such as protein folding and ligand binding.

Preparation of uranium fuel kernels with silicon carbide nanoparticles using the internal gelation process

NASA Astrophysics Data System (ADS)

Hunt, R. D.; Silva, G. W. C. M.; Lindemer, T. B.; Anderson, K. K.; Collins, J. L.

2012-08-01

The US Department of Energy continues to use the internal gelation process in its preparation of tristructural isotropic coated fuel particles. The focus of this work is to develop uranium fuel kernels with adequately dispersed silicon carbide (SiC) nanoparticles, high crush strengths, uniform particle diameter, and good sphericity. During irradiation to high burnup, the SiC in the uranium kernels will serve as getters for excess oxygen and help control the oxygen potential in order to minimize the potential for kernel migration. The hardness of SiC required modifications to the gelation system that was used to make uranium kernels. Suitable processing conditions and potential equipment changes were identified so that the SiC could be homogeneously dispersed in gel spheres. Finally, dilute hydrogen rather than argon should be used to sinter the uranium kernels with SiC.

Final Technical Report - 300°C Capable Electronics Platform and Temperature Sensor System For Enhanced Geothermal Systems

DOE Office of Scientific and Technical Information (OSTI.GOV)

Chen, Cheng-Po; Shaddock, David; Sandvik, Peter

2012-11-30

A silicon carbide (SiC) based electronic temperature sensor prototype has been demonstrated to operate at 300°C. We showed continuous operation of 1,000 hours with SiC operational amplifier and surface mounted discreet resistors and capacitors on a ceramic circuit board. This feasibility demonstration is a major milestone in the development of high temperature electronics in general and high temperature geothermal exploration and well management tools in particular. SiC technology offers technical advantages that are not found in competing technologies such as silicon-on-insulator (SOI) at high temperatures of 200°C to 300°C and beyond. The SiC integrated circuits and packaging methods can bemore » used in new product introduction by GE Oil and Gas for high temperature down-hole tools. The existing SiC fabrication facility at GE is sufficient to support the quantities currently demanded by the marketplace, and there are other entities in the United States and other countries capable of ramping up SiC technology manufacturing. The ceramic circuit boards are different from traditional organic-based electronics circuit boards, but the fabrication process is compatible with existing ceramic substrate manufacturing. This project has brought high temperature electronics forward, and brings us closer to commercializing tools that will enable and reduce the cost of enhanced geothermal technology to benefit the public in terms of providing clean renewable energy at lower costs.« less

DOE Office of Scientific and Technical Information (OSTI.GOV)

Nabeel A. Riza

The goals of the first six months of this project were to lay the foundations for both the SiC front-end optical chip fabrication as well as the free-space laser beam interferometer designs and preliminary tests. In addition, a Phase I goal was to design and experimentally build the high temperature and pressure infrastructure and test systems that will be used in the next 6 months for proposed sensor experimentation and data processing. All these goals have been achieved and are described in detail in the report. Both design process and diagrams for the mechanical elements as well as the opticalmore » systems are provided. In addition, photographs of the fabricated SiC optical chips, the high temperature & pressure test chamber instrument, the optical interferometer, the SiC sample chip holder, and signal processing data are provided. The design and experimentation results are summarized to give positive conclusions on the proposed novel high temperature optical sensor technology.« less

Surface Control of Actuated Hybrid Space Mirrors

DTIC Science & Technology

2010-10-01

precision Nanolaminate foil facesheet and Silicon Carbide ( SiC ) substrate embedded with electroactive ceramic actuators. Wavefront sensors are used to...integrate precision Nanolaminate foil facesheet with Silicon Carbide ( SiC ) substrate equipped with embedded electroactive ceramic actuators...IAC-10.C2.5.8 SURFACE CONTROL OF ACTUATED HYBRID SPACE MIRRORS Brij. N. Agrawal Naval Postgraduate School, Monterey, CA, 93943, agrawal

Organometallic Precursor Routes to Si-C-Al-O-N Ceramics

DTIC Science & Technology

1991-05-15

Pyrolysis Chemistry of Polymeric Precursors to SiC and Si3 N 4", Kluwer Academic Publishers, Dordrecht, NATO Workshop or Organometallic Polymers with Special...the polymer to a preceramic SiC . Thus the IR and H CRAMPS spectra confirm the decreasing concentration of hydrogen with increasing pyrolysis ...generality of this polymer pyrolysis route to nanocrystalline composites of refractory nitride and carbide ceramics. Investigation of AlN Precursors Our

A 1 GHz Oscillator-Type Active Antenna

NASA Technical Reports Server (NTRS)

Jordan, Jennifer L.; Scardelletti, Maximilian; Ponchak, George E.

2008-01-01

Wireless sensors are desired for monitoring aircraft engines, automotive engines, industrial machinery, and many other applications. The most important requirement of sensors is that they do not interfere with the environment that they are monitoring. Therefore, wireless sensors must be small, which demands a high level of integration. Sensors that modulate an oscillator active antenna have advantages of small size, high level of integration, and lower packaging cost. Several types of oscillator active antennas have been reported. Ip et al. demonstrated a CPW line fed patch antenna with a feedback loop [1]. No degradation in performance was noticed without a ground plane. A GaAs FET was used in an amplifier/oscillator-based active antenna [2]. An oscillator based on a Cree SiC transistor was designed and characterized in [3]. This paper reports the integration of the SiC Clapp oscillator to a slotline loop antenna.

Demonstration of SiC Pressure Sensors at 750 C

NASA Technical Reports Server (NTRS)

Okojie, Robert S.; Lukco, Dorothy; Nguyen, Vu; Savrun, Ender

2014-01-01

We report the first demonstration of MEMS-based 4H-SiC piezoresistive pressure sensors tested at 750 C and in the process confirmed the existence of strain sensitivity recovery with increasing temperature above 400 C, eventually achieving near or up to 100% of the room temperature values at 750 C. This strain sensitivity recovery phenomenon in 4H-SiC is uncharacteristic of the well-known monotonic decrease in strain sensitivity with increasing temperature in silicon piezoresistors. For the three sensors tested, the room temperature full-scale output (FSO) at 200 psig ranged between 29 and 36 mV. Although the FSO at 400 C dropped by about 60%, full recovery was achieved at 750 C. This result will allow the operation of SiC pressure sensors at higher temperatures, thereby permitting deeper insertion into the engine combustion chamber to improve the accurate quantification of combustor dynamics.

Multi-functional micro electromechanical devices and method of bulk manufacturing same

NASA Technical Reports Server (NTRS)

Okojie, Robert S. (Inventor)

2004-01-01

A method of bulk manufacturing SiC sensors is disclosed and claimed. Materials other than SiC may be used as the substrate material. Sensors requiring that the SiC substrate be pierced are also disclosed and claimed. A process flow reversal is employed whereby the metallization is applied first before the recesses are etched into or through the wafer. Aluminum is deposited on the entire planar surface of the metallization. Photoresist is spun onto the substantially planar surface of the Aluminum which is subsequently masked (and developed and removed). Unwanted Aluminum is etched with aqueous TMAH and subsequently the metallization is dry etched. Photoresist is spun onto the still substantially planar surface of Aluminum and oxide and then masked (and developed and removed) leaving the unimidized photoresist behind. Next, ITO is applied over the still substantially planar surface of Aluminum, oxide and unimidized photoresist. Unimidized and exposed photoresist and ITO directly above it are removed with Acetone. Next, deep reactive ion etching attacks exposed oxide not protected by ITO. Finally, hot phosphoric acid removes the Al and ITO enabling wires to connect with the metallization. The back side of the SiC wafer may be also be etched.

New Deep Reactive Ion Etching Process Developed for the Microfabrication of Silicon Carbide

NASA Technical Reports Server (NTRS)

Evans, Laura J.; Beheim, Glenn M.

2005-01-01

Silicon carbide (SiC) is a promising material for harsh environment sensors and electronics because it can enable such devices to withstand high temperatures and corrosive environments. Microfabrication techniques have been studied extensively in an effort to obtain the same flexibility of machining SiC that is possible for the fabrication of silicon devices. Bulk micromachining using deep reactive ion etching (DRIE) is attractive because it allows the fabrication of microstructures with high aspect ratios (etch depth divided by lateral feature size) in single-crystal or polycrystalline wafers. Previously, the Sensors and Electronics Branch of the NASA Glenn Research Center developed a DRIE process for SiC using the etchant gases sulfur hexafluoride (SF6) and argon (Ar). This process provides an adequate etch rate of 0.2 m/min and yields a smooth surface at the etch bottom. However, the etch sidewalls are rougher than desired, as shown in the preceding photomicrograph. Furthermore, the resulting structures have sides that slope inwards, rather than being precisely vertical. A new DRIE process for SiC was developed at Glenn that produces smooth, vertical sidewalls, while maintaining an adequately high etch rate.

Design and fabrication of a differential scanning nanocalorimeter

DOE PAGES

Zuo, Lei; Chen, Xiaoming; Yu, Shifeng; ...

2016-12-19

This paper describes the design, fabrication, and characterization of a differential scanning nanocalorimeter that significantly reduces the sample volume to microliters and can potentially improve the temperature sensitivity to 10 µK. The nanocalorimeter consists of a polymeric freestanding membrane, four high-sensitive low-noise thermistors based on silicon carbide (SiC), and a platinum heater and temperature sensor. With the integrated heater and sensors, temperature scanning and power compensation can be achieved for calorimetric measurement. Temperature sensing SiC film was prepared by using sintered SiC target and DC magnetron sputtering under different gas pressures and sputtering power. The SiC sensing material is characterizedmore » through the measurement of current–voltage curves and noise levels. The thermal performance of a fabricated nanocalorimeter is studied in simulation and experiment. The experiment results show the device has excellent thermal isolation to hold thermal energy. As a result, the noise test together with the simulation show the device is promising for micro 10 µK temperature sensitivity and nanowatt resolution which will lead to low-volume ultra-sensitive nanocalorimetry for biological processes, such as protein folding and ligand binding.« less

Radiolytic hydrogen generation at silicon carbide-water interfaces

NASA Astrophysics Data System (ADS)

Schofield, Jennifer; Reiff, Sarah C.; Pimblott, Simon M.; LaVerne, Jay A.

2016-02-01

While many of the proposed uses of SiC in the nuclear industry involve systems that are assumed to be dry, almost all materials have dissociated chemisorbed water associated with their surface, which can undergo chemistry in radiation fields. Silicon carbide α-phase and β-phase nanoparticles with water were irradiated with γ-rays and 5 MeV 4He ions followed by the determination of the production of molecular hydrogen, H2, and characterization of changes in the particle surface. The yields of H2 from SiC-water slurries were always greater than expected from a simple mixture rule indicating that the presence of SiC was influencing the production of H2 from water, probably through an energy transfer from the solid to liquid phase. Although the increase in H2 yields was modest, a decrease in the water mass percentage led to an increase in H2 yields, especially for very low amounts of water. Surface analysis techniques included diffuse reflectance infrared Fourier transform spectroscopy (DRIFT), nitrogen absorption with the Brunauer - Emmett - Teller (BET) methodology for surface area determination, X-ray diffraction (XRD), Raman spectroscopy, and X-ray photoelectron spectroscopy (XPS). Little change in the SiC surface was observed following radiolysis except for some conversion of β-phase SiC to the α-phase and the formation of SiO2 with He ion radiolysis.

U.S. Department of Energy Accident Resistant SiC Clad Nuclear Fuel Development

DOE Office of Scientific and Technical Information (OSTI.GOV)

George W. Griffith

2011-10-01

A significant effort is being placed on silicon carbide ceramic matrix composite (SiC CMC) nuclear fuel cladding by Light Water Reactor Sustainability (LWRS) Advanced Light Water Reactor Nuclear Fuels Pathway. The intent of this work is to invest in a high-risk, high-reward technology that can be introduced in a relatively short time. The LWRS goal is to demonstrate successful advanced fuels technology that suitable for commercial development to support nuclear relicensing. Ceramic matrix composites are an established non-nuclear technology that utilizes ceramic fibers embedded in a ceramic matrix. A thin interfacial layer between the fibers and the matrix allows formore » ductile behavior. The SiC CMC has relatively high strength at high reactor accident temperatures when compared to metallic cladding. SiC also has a very low chemical reactivity and doesn't react exothermically with the reactor cooling water. The radiation behavior of SiC has also been studied extensively as structural fusion system components. The SiC CMC technology is in the early stages of development and will need to mature before confidence in the developed designs can created. The advanced SiC CMC materials do offer the potential for greatly improved safety because of their high temperature strength, chemical stability and reduced hydrogen generation.« less

DOE Office of Scientific and Technical Information (OSTI.GOV)

Nabeel A. Riza

The goals of the first six months of this project were to lay the foundations for both the SiC front-end optical chip fabrication as well as the free-space laser beam interferometer designs and preliminary tests. In addition, a Phase I goal was to design and experimentally build the high temperature and pressure infrastructure and test systems that will be used in the next 6 months for proposed sensor experimentation and data processing. All these goals have been achieved and are described in detail in the report. Both design process and diagrams for the mechanical elements as well as the opticalmore » systems are provided. In addition, photographs of the fabricated SiC optical chips, the high temperature & pressure test chamber instrument, the optical interferometer, the SiC sample chip holder, and signal processing data are provided. The design and experimentation results are summarized to give positive conclusions on the proposed novel high temperature optical sensor technology. The goals of the second six months of this project were to conduct high temperature sensing tests using the test chamber and optical sensing instrument designs developed in the first part of the project. In addition, a Phase I goal was to develop the basic processing theory and physics for the proposed first sensor experimentation and data processing. All these goals have been achieved and are described in detail. Both optical experimental design process and sensed temperature are provided. In addition, photographs of the fabricated SiC optical chips after deployment in the high temperature test chamber are shown from a material study point-of-view.« less

Extreme-Environment Silicon-Carbide (SiC) Wireless Sensor Suite

NASA Technical Reports Server (NTRS)

Yang, Jie

2015-01-01

Phase II objectives: Develop an integrated silicon-carbide wireless sensor suite capable of in situ measurements of critical characteristics of NTP engine; Compose silicon-carbide wireless sensor suite of: Extreme-environment sensors center, Dedicated high-temperature (450 deg C) silicon-carbide electronics that provide power and signal conditioning capabilities as well as radio frequency modulation and wireless data transmission capabilities center, An onboard energy harvesting system as a power source.

Silicon Carbide High-Temperature Power Rectifiers Fabricated and Characterized

NASA Technical Reports Server (NTRS)

1996-01-01

The High Temperature Integrated Electronics and Sensors (HTIES) team at the NASA Lewis Research Center is developing silicon carbide (SiC) for use in harsh conditions where silicon, the semiconductor used in nearly all of today's electronics, cannot function. Silicon carbide's demonstrated ability to function under extreme high-temperature, high power, and/or high-radiation conditions will enable significant improvements to a far ranging variety of applications and systems. These improvements range from improved high-voltage switching for energy savings in public electric power distribution and electric vehicles, to more powerful microwave electronics for radar and cellular communications, to sensors and controls for cleaner-burning, more fuel-efficient jet aircraft and automobile engines. In the case of jet engines, uncooled operation of 300 to 600 C SiC power actuator electronics mounted in key high-temperature areas would greatly enhance system performance and reliability. Because silicon cannot function at these elevated temperatures, the semiconductor device circuit components must be made of SiC. Lewis' HTIES group recently fabricated and characterized high-temperature SiC rectifier diodes whose record-breaking characteristics represent significant progress toward the realization of advanced high-temperature actuator control circuits. The first figure illustrates the 600 C probe-testing of a Lewis SiC pn-junction rectifier diode sitting on top of a glowing red-hot heating element. The second figure shows the current-versus voltage rectifying characteristics recorded at 600 C. At this high temperature, the diodes were able to "turn-on" to conduct 4 A of current when forward biased, and yet block the flow of current ($quot;turn-off") when reverse biases as high as 150 V were applied. This device represents a new record for semiconductor device operation, in that no previous semiconductor electronic device has ever simultaneously demonstrated 600 C functionality, and 4-A turn-on and 150-V rectification. The high operating current was achieved despite severe device size limitations imposed by present-day SiC wafer defect densities. Further substantial increases in device performance can be expected when SiC wafer defect densities decrease as SiC wafer production technology matures.

Water and hydrogen are immiscible in Earth's mantle.

PubMed

Bali, Enikő; Audétat, Andreas; Keppler, Hans

2013-03-14

In the deep, chemically reducing parts of Earth's mantle, hydrous fluids contain significant amounts of molecular hydrogen (H2). Thermodynamic models of fluids in Earth's mantle so far have always assumed that molecular hydrogen and water are completely miscible. Here we show experimental evidence that water and hydrogen can coexist as two separate, immiscible phases. Immiscibility between water and hydrogen may be the cause of the formation of enigmatic, ultra-reducing domains in the mantle that contain moissanite (SiC) and other phases indicative of extremely reducing conditions. Moreover, the immiscibility between water and hydrogen may provide a mechanism for the rapid oxidation of Earth's upper mantle immediately following core formation.

Optimization of KOH etching parameters for quantitative defect recognition in n- and p-type doped SiC

NASA Astrophysics Data System (ADS)

Sakwe, S. A.; Müller, R.; Wellmann, P. J.

2006-04-01

We have developed a KOH-based defect etching procedure for silicon carbide (SiC), which comprises in situ temperature measurement and control of melt composition. As benefit for the first time reproducible etching conditions were established (calibration plot, etching rate versus temperature and time); the etching procedure is time independent, i.e. no altering in KOH melt composition takes place, and absolute melt temperature values can be set. The paper describes this advanced KOH etching furnace, including the development of a new temperature sensor resistant to molten KOH. We present updated, absolute KOH etching parameters of n-type SiC and new absolute KOH etching parameters for low and highly p-type doped SiC, which are used for quantitative defect analysis. As best defect etching recipes we found T=530 °C/5 min (activation energy: 16.4 kcal/mol) and T=500 °C/5 min (activation energy: 13.5 kcal/mol) for n-type and p-type SiC, respectively.

Silicon Carbide Temperature Monitor Processing Improvements. Status Report

DOE Office of Scientific and Technical Information (OSTI.GOV)

Unruh, Troy Casey; Daw, Joshua Earl; Ahamad Al Rashdan

2016-01-29

Silicon carbide (SiC) temperature monitors are used as temperature sensors in Advanced Test Reactor (ATR) irradiations at the Idaho National Laboratory (INL). Although thermocouples are typically used to provide real-time temperature indication in instrumented lead tests, other indicators, such as melt wires, are also often included in such tests as an independent technique of detecting peak temperatures incurred during irradiation. In addition, less expensive static capsule tests, which have no leads attached for real-time data transmission, often rely on melt wires as a post-irradiation technique for peak temperature indication. Melt wires are limited in that they can only detect whethermore » a single temperature is or is not exceeded. SiC monitors are advantageous because a single monitor can be used to detect for a range of temperatures that occurred during irradiation. As part of the process initiated to make SiC temperature monitors available at the ATR, post-irradiation evaluations of these monitors have been previously completed at the High Temperature Test Laboratory (HTTL). INL selected the resistance measurement approach for determining irradiation temperature from SiC temperature monitors because it is considered to be the most accurate measurement. The current process involves the repeated annealing of the SiC monitors at incrementally increasing temperature, with resistivity measurements made between annealing steps. The process is time consuming and requires the nearly constant attention of a trained staff member. In addition to the expensive and lengthy post analysis required, the current process adds many potential sources of error in the measurement, as the sensor must be repeatedly moved from furnace to test fixture. This time-consuming post irradiation analysis is a significant portion of the total cost of using these otherwise inexpensive sensors. An additional consideration of this research is that, if the SiC post processing can be automated, it could be performed in an MFC hot cell, further reducing the time and expense of lengthy decontaminations prior to processing. Sections of this report provide a general description of resistivity techniques currently used to infer peak irradiation temperature from silicon carbide temperature monitors along with some representative data, the proposed concepts to improve the process of analyzing irradiated SiC temperature monitors, the completed efforts to prove the proposed concepts, and future activities. The efforts detailed here succeeded in designing and developing a real-time automated SiC resistivity measurement system, and performed two initial test runs. Activities carried out include the assembly and integration of the system hardware; the design and development of a preliminary monitor fixture; the design of a technique to automate the data analysis and processing; the development of the communication, coordination, and user software; and the execution and troubleshooting of test run experiments using the box furnace. Although the automation system performed as required, the designed fixture did not succeed in establishing the needed electrical contacts with the SiC monitor.« less

Investigation of the applicability of using the triple redundant hydrogen sensor for methane sensing

NASA Technical Reports Server (NTRS)

Lantz, J. B.; Wynveen, R. A.

1983-01-01

Application specifications for the methane sensor were assembled and design guidelines, development goals and evaluation criteria were formulated. This was done to provide a framework to evaluate sensor performance and any design adjustments to the preprototype sensor that could be required to provide methane sensitivity. Good response to hydrogen was experimentally established for four hydrogen sensor elements to be later evaluated for methane response. Prior results were assembled and analyzed for other prototype hydrogen sensor performance parameters to form a comparison base. The four sensor elements previously shown to have good hydrogen response were experimentally evaluated for methane response in 2.5% methane-in-air. No response was obtained for any of the elements, despite the high methane concentration used (50% of the Lower Flammability Limit). It was concluded that the preprototype sensing elements were insensitive to methane and were hydrogen specific. Alternative sensor operating conditions and hardware design changes were considered to provide methane sensitivity to the preprototype sensor, including a variety of different methane sensing techniques. Minor changes to the existing sensor elements, sensor geometry and operating conditions will not make the preprototype hydrogen sensor respond to methane. New sensor elements that will provide methane and hydrogen sensitivity require replacement of the existing thermistor type elements. Some hydrogen sensing characteristics of the modified sensor will be compromised (larger in situ calibration gas volume and H2 nonspecificity). The preprototype hydrogen sensor should be retained for hydrogen monitoring and a separate methane sensor should be developed.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Nabeel A. Riza

The goals of the second six months of the Phase 2 of this project were to conduct first time experimental studies using optical designs and some initial hardware developed in the first 6 months of Phase 2. One focus is to modify the SiC chip optical properties to enable gas species sensing with a specific gas species under high temperature and pressure. The goal was to acquire sensing test data using two example inert and safe gases and show gas discrimination abilities. A high pressure gas mixing chamber was to be designed and assembled to achieve the mentioned gas sensingmore » needs. Another goal was to initiate high temperature probe design by developing and testing a probe design that leads to accurately measuring the thickness of the deployed SiC sensor chip to enable accurate overall sensor system design. The third goal of this phase of the project was to test the SiC chip under high pressure conditions using the earlier designed calibration cell to enable it to act as a pressure sensor when doing gas detection. In this case, experiments using a controlled pressure system were to deliver repeatable pressure measurement data. All these goals have been achieved and are described in detail in the report. Both design process and diagrams for the mechanical elements as well as the optical systems are provided. Photographs or schematics of the fabricated hardware are provided. Experimental data from the three optical sensor systems (i.e., Thickness, pressure, and gas species) is provided. The design and experimentation results are summarized to give positive conclusions on the proposed novel high temperature high pressure gas species detection optical sensor technology.« less

Development of an Extreme High Temperature n-type Ohmic Contact to Silicon Carbide

NASA Technical Reports Server (NTRS)

Evans, Laura J.; Okojie, Robert S.; Lukco, Dorothy

2011-01-01

We report on the initial demonstration of a tungsten-nickel (75:25 at. %) ohmic contact to silicon carbide (SiC) that performed for up to fifteen hours of heat treatment in argon at 1000 C. The transfer length method (TLM) test structure was used to evaluate the contacts. Samples showed consistent ohmic behavior with specific contact resistance values averaging 5 x 10-4 -cm2. The development of this contact metallization should allow silicon carbide devices to operate more reliably at the present maximum operating temperature of 600 C while potentially extending operations to 1000 C. Introduction Silicon Carbide (SiC) is widely recognized as one of the materials of choice for high temperature, harsh environment sensors and electronics due to its ability to survive and continue normal operation in such environments [1]. Sensors and electronics in SiC have been developed that are capable of operating at temperatures of 600 oC. However operating these devices at the upper reliability temperature threshold increases the potential for early degradation. Therefore, it is important to raise the reliability temperature ceiling higher, which would assure increased device reliability when operated at nominal temperature. There are also instances that require devices to operate and survive for prolonged periods of time above 600 oC [2, 3]. This is specifically needed in the area of hypersonic flight where robust sensors are needed to monitor vehicle performance at temperature greater than 1000 C, as well as for use in the thermomechanical characterization of high temperature materials (e.g. ceramic matrix composites). While SiC alone can withstand these temperatures, a major challenge is to develop reliable electrical contacts to the device itself in order to facilitate signal extraction

NASA Tech Briefs, January 2005

NASA Technical Reports Server (NTRS)

2005-01-01

Topics covered include: Fiber-Optic Sensor Would Monitor Growth of Polymer Film; Sensors for Pointing Moving Instruments Toward Each Other; Pd/CeO2/SiC Chemical Sensors; Microparticle Flow Sensor; Scattering-Type Surface-Plasmon-Resonance Biosensors; Diode-Laser-Based Spectrometer for Sensing Gases; Improved Cathode Structure for a Direct Methanol Fuel Cell; X-Band, 17-Watt Solid-State Power Amplifier; Improved Anode for a Direct Methanol Fuel Cell; Tools for Designing and Analyzing Structures; Interactive Display of Scenes with Annotations; Solving Common Mathematical Problems; Tools for Basic Statistical Analysis; Program Calculates Forces in Bolted Structural Joints; Integrated Structural Analysis and Test Program; Molybdate Coatings for Protecting Aluminum Against Corrosion; Synthesizing Diamond from Liquid Feedstock; Modifying Silicates for Better Dispersion in Nanocomposites; Powder-Collection System for Ultrasonic/Sonic Drill/Corer; Semiautomated, Reproducible Batch Processing of Soy; Hydrogen Peroxide Enhances Removal of NOx from Flue Gases; Subsurface Ice Probe; Real-Time Simulation of Aeroheating of the Hyper-X Airplane; Using Laser-Induced Incandescence To Measure Soot in Exhaust; Method of Real-Time Principal-Component Analysis; Insect-Inspired Flight Control for Unmanned Aerial Vehicles; Domain Compilation for Embedded Real-Time Planning; Semantic Metrics for Analysis of Software; Simulation of Laser Cooling and Trapping in Engineering Applications; Large Fluvial Fans and Exploration for Hydrocarbons; Doping-Induced Interband Gain in InAs/AlSb Quantum Wells; Development of Software for a Lidar-Altimeter Processor; Upgrading the Space Shuttle Caution and Warning System; and Fractal Reference Signals in Pulse-Width Modulation.

Material Development of Faraday Cup Grids for the Solar Probe Plus Mission

NASA Technical Reports Server (NTRS)

Volz, M. P.; Mazuruk, K.; Wright, K. H.; Cirtain, J. W.; Lee, R.; Kasper, J. C.

2011-01-01

The Solar Probe Plus mission will launch a spacecraft to the Sun to study it's outer atmosphere. One of the instruments on board will be a Faraday Cup (FC) sensor. The FC will determine solar wind properties by measuring the current produced by ions striking a metal collector plate. It will be directly exposed to the Sun and will be subject to the temperature and radiation environment that exist within 10 solar radii. Conducting grids within the FC are biased up to 10 kV and are used to selectively transmit particles based on their energy to charge ratio. We report on the development of SiC grids. Tests were done on nitrogen-doped SiC starting disks obtained from several vendors, including annealing under vacuum at 1400 C and measurement of their electrical properties. SiC grids were manufactured using a photolithographic and plasma-etching process. The grids were incorporated into a prototype FC and tested in a simulated solar wind chamber. The energy cutoffs were measured for both proton and electron fluxes and met the anticipated sensor requirements.

Ultra-high strain in epitaxial silicon carbide nanostructures utilizing residual stress amplification

NASA Astrophysics Data System (ADS)

Phan, Hoang-Phuong; Nguyen, Tuan-Khoa; Dinh, Toan; Ina, Ginnosuke; Kermany, Atieh Ranjbar; Qamar, Afzaal; Han, Jisheng; Namazu, Takahiro; Maeda, Ryutaro; Dao, Dzung Viet; Nguyen, Nam-Trung

2017-04-01

Strain engineering has attracted great attention, particularly for epitaxial films grown on a different substrate. Residual strains of SiC have been widely employed to form ultra-high frequency and high Q factor resonators. However, to date, the highest residual strain of SiC was reported to be limited to approximately 0.6%. Large strains induced into SiC could lead to several interesting physical phenomena, as well as significant improvement of resonant frequencies. We report an unprecedented nanostrain-amplifier structure with an ultra-high residual strain up to 8% utilizing the natural residual stress between epitaxial 3C-SiC and Si. In addition, the applied strain can be tuned by changing the dimensions of the amplifier structure. The possibility of introducing such a controllable and ultra-high strain will open the door to investigating the physics of SiC in large strain regimes and the development of ultra sensitive mechanical sensors.

Overview of the U.S. DOE Hydrogen Safety, Codes and Standards Program. Part 4: Hydrogen Sensors; Preprint

DOE Office of Scientific and Technical Information (OSTI.GOV)

Buttner, William J.; Rivkin, Carl; Burgess, Robert

Hydrogen sensors are recognized as a critical element in the safety design for any hydrogen system. In this role, sensors can perform several important functions including indication of unintended hydrogen releases, activation of mitigation strategies to preclude the development of dangerous situations, activation of alarm systems and communication to first responders, and to initiate system shutdown. The functionality of hydrogen sensors in this capacity is decoupled from the system being monitored, thereby providing an independent safety component that is not affected by the system itself. The importance of hydrogen sensors has been recognized by DOE and by the Fuel Cellmore » Technologies Office's Safety and Codes Standards (SCS) program in particular, which has for several years supported hydrogen safety sensor research and development. The SCS hydrogen sensor programs are currently led by the National Renewable Energy Laboratory, Los Alamos National Laboratory, and Lawrence Livermore National Laboratory. The current SCS sensor program encompasses the full range of issues related to safety sensors, including development of advance sensor platforms with exemplary performance, development of sensor-related code and standards, outreach to stakeholders on the role sensors play in facilitating deployment, technology evaluation, and support on the proper selection and use of sensors.« less

Early implementation of SiC cladding fuel performance models in BISON

DOE Office of Scientific and Technical Information (OSTI.GOV)

Powers, Jeffrey J.

2015-09-18

SiC-based ceramic matrix composites (CMCs) [5–8] are being developed and evaluated internationally as potential LWR cladding options. These development activities include interests within both the DOE-NE LWR Sustainability (LWRS) Program and the DOE-NE Advanced Fuels Campaign. The LWRS Program considers SiC ceramic matrix composites (CMCs) as offering potentially revolutionary gains as a cladding material, with possible benefits including more efficient normal operating conditions and higher safety margins under accident conditions [9]. Within the Advanced Fuels Campaign, SiC-based composites are a candidate ATF cladding material that could achieve several goals, such as reducing the rates of heat and hydrogen generation duemore » to lower cladding oxidation rates in HT steam [10]. This work focuses on the application of SiC cladding as an ATF cladding material in PWRs, but these work efforts also support the general development and assessment of SiC as an LWR cladding material in a much broader sense.« less

Integrated Temperature and Hydrogen Sensors with MEMS Technology

PubMed Central

Jiang, Hongchuan; Huang, Min; Yu, Yibing; Tian, Xiaoyu; Zhang, Wanli; Zhang, Jianfeng; Huang, Yifan; Yu, Kun

2017-01-01

In this work, a PdNi thin film hydrogen gas sensor with integrated Pt thin film temperature sensor was designed and fabricated using the micro-electro-mechanical system (MEMS) process. The integrated sensors consist of two resistors: the former, based on Pt film, is used as a temperature sensor, while the latter had the function of hydrogen sensing and is based on PdNi alloy film. The temperature coefficient of resistance (TCR) in both devices was measured and the output response of the PdNi film hydrogen sensor was calibrated based on the temperature acquired by the Pt temperature sensor. The SiN layer was deposited on top of Pt film to inhibit the hydrogen diffusion and reduce consequent disturbance on temperature measurement. The TCR of the PdNi film and the Pt film was about 0.00122/K and 0.00217/K, respectively. The performances of the PdNi film hydrogen sensor were investigated with hydrogen concentrations from 0.3% to 3% on different temperatures from 294.7 to 302.2 K. With the measured temperature of the Pt resistor and the TCR of the PdNi film, the impact of the temperature on the performances of the PdNi film hydrogen sensor was reduced. The output response, response time and recovery time of the PdNi film hydrogen sensors under the hydrogen concentration of 0.5%, 1.0%, 1.5% and 2.0% were measured at 313 K. The output response of the PdNi thin film hydrogen sensors increased with increasing hydrogen concentration while the response time and recovery time decreased. A cycling test between pure nitrogen and 3% hydrogen concentration was performed at 313 K and PdNi thin film hydrogen sensor demonstrated great repeatability in the cycling test. PMID:29301220

Solar Water Splitting Utilizing a SiC Photocathode, a BiVO4 Photoanode, and a Perovskite Solar Cell.

PubMed

Iwase, Akihide; Kudo, Akihiko; Numata, Youhei; Ikegami, Masashi; Miyasaka, Tsutomu; Ichikawa, Naoto; Kato, Masashi; Hashimoto, Hideki; Inoue, Haruo; Ishitani, Osamu; Tamiaki, Hitoshi

2017-11-23

We have successfully demonstrated solar water splitting using a newly fabricated photoelectrochemical system with a Pt-loaded SiC photocathode, a CoO x -loaded BiVO 4 photoanode, and a perovskite solar cell. Detection of the evolved H 2 and O 2 with a 100 % Faradaic efficiency indicates that the observed photocurrent was used for water splitting. The solar-to-hydrogen (STH) efficiency was 0.55 % under no additional bias conditions. © 2017 Wiley-VCH Verlag GmbH & Co. KGaA, Weinheim.

A Harsh Environment Wireless Pressure Sensing Solution Utilizing High Temperature Electronics

PubMed Central

Yang, Jie

2013-01-01

Pressure measurement under harsh environments, especially at high temperatures, is of great interest to many industries. The applicability of current pressure sensing technologies in extreme environments is limited by the embedded electronics which cannot survive beyond 300 °C ambient temperature as of today. In this paper, a pressure signal processing and wireless transmission module based on the cutting-edge Silicon Carbide (SiC) devices is designed and developed, for a commercial piezoresistive MEMS pressure sensor from Kulite Semiconductor Products, Inc. Equipped with this advanced high-temperature SiC electronics, not only the sensor head, but the entire pressure sensor suite is capable of operating at 450 °C. The addition of wireless functionality also makes the pressure sensor more flexible in harsh environments by eliminating the costly and fragile cable connections. The proposed approach was verified through prototype fabrication and high temperature bench testing from room temperature up to 450 °C. This novel high-temperature pressure sensing technology can be applied in real-time health monitoring of many systems involving harsh environments, such as military and commercial turbine engines. PMID:23447006

A harsh environment wireless pressure sensing solution utilizing high temperature electronics.

PubMed

Yang, Jie

2013-02-27

Pressure measurement under harsh environments, especially at high temperatures, is of great interest to many industries. The applicability of current pressure sensing technologies in extreme environments is limited by the embedded electronics which cannot survive beyond 300 °C ambient temperature as of today. In this paper, a pressure signal processing and wireless transmission module based on the cutting-edge Silicon Carbide (SiC) devices is designed and developed, for a commercial piezoresistive MEMS pressure sensor from Kulite Semiconductor Products, Inc. Equipped with this advanced high-temperature SiC electronics, not only the sensor head, but the entire pressure sensor suite is capable of operating at 450 °C. The addition of wireless functionality also makes the pressure sensor more flexible in harsh environments by eliminating the costly and fragile cable connections. The proposed approach was verified through prototype fabrication and high temperature bench testing from room temperature up to 450 °C. This novel high-temperature pressure sensing technology can be applied in real-time health monitoring of many systems involving harsh environments, such as military and commercial turbine engines.

Effects of high-temperature hydrogenation treatment on sliding friction and wear behavior of carbide-derived carbon films.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Erdemir, A.; Kovalchenko, A.; McNallan, M. J.

2004-01-01

In this study, we investigated the effects of a high-temperature hydrogenation treatment on the sliding friction and wear behavior of nanostructured carbide-derived carbon (CDC) films in dry nitrogen and humid air environments. These films are produced on the surfaces of silicon carbide substrates by reacting the carbide phase with chlorine or chlorine-hydrogen gas mixtures at 1000 to 1100 C in a sealed tube furnace. The typical friction coefficients of CDC films in open air are in the range of 0.2 to 0.25, but in dry nitrogen, the friction coefficients are 0.15. In an effort to achieve lower friction on CDCmore » films, we developed and used a special hydrogenation process that was proven to be very effective in lowering friction of CDC films produced on SiC substrates. Specifically, the films that were post-hydrogen-treated exhibited friction coefficients as low as 0.03 in dry nitrogen, while the friction coefficients in humid air were 0.2. The wear of Si{sub 3}N{sub 4} counterface balls was hard to measure after the tests, while shallow wear tracks had formed on CDC films on SiC disks. Detailed mechanical and structural characterizations of the CDC films and sliding contact surfaces were done using a series of analytical techniques and these findings were correlated with the friction and wear behaviors of as-produced and hydrogen-treated CDC films.« less

Alkali (Li, K and Na) and alkali-earth (Be, Ca and Mg) adatoms on SiC single layer

NASA Astrophysics Data System (ADS)

Baierle, Rogério J.; Rupp, Caroline J.; Anversa, Jonas

2018-03-01

First-principles calculations within the density functional theory (DFT) have been addressed to study the energetic stability, and electronic properties of alkali and alkali-earth atoms adsorbed on a silicon carbide (SiC) single layer. We observe that all atoms are most stable (higher binding energy) on the top of a Si atom, which moves out of the plane (in the opposite direction to the adsorbed atom). Alkali atoms adsorbed give raise to two spin unpaired electronic levels inside the band gap leading the SiC single layer to exhibit n-type semiconductor properties. For alkaline atoms adsorbed there is a deep occupied spin paired electronic level inside the band gap. These finding suggest that the adsorption of alkaline and alkali-earth atoms on SiC layer is a powerful feature to functionalize two dimensional SiC structures, which can be used to produce new electronic, magnetic and optical devices as well for hydrogen and oxygen evolution reaction (HER and OER, respectively). Furthermore, we observe that the adsorption of H2 is ruled by dispersive forces (van der Waals interactions) while the O2 molecule is strongly adsorbed on the functionalized system.

Fiber-optic temperature sensor using a spectrum-modulating semiconductor etalon

NASA Technical Reports Server (NTRS)

Beheim, Glenn; Anthan, Donald J.; Beheim, Glenn; Anthan, Donald J.

1987-01-01

Described is a fiber-optic temperature sensor that uses a spectrum modulating SiC etalon. The spectral output of this type of sensor may be analyzed to obtain a temperature measurement which is largely independent of the transmission properties of the sensor's fiber-optic link. A highly precise laboratory spectrometer is described in detail, and this instrument is used to study the properties of this type of sensor. Also described are a number of different spectrum analyzers that are more suitable for use in a practical thermometer.

A survey and analysis of commercially available hydrogen sensors

NASA Technical Reports Server (NTRS)

Hunter, Gary W.

1992-01-01

The performance requirements for hydrogen detection in aerospace applications often exceed those of more traditional applications. In order to ascertain the applicability of existing hydrogen sensors to aerospace applications, a survey was conducted of commercially available point-contact hydrogen sensors, and their operation was analyzed. The operation of the majority of commercial hydrogen sensors falls into four main categories: catalytic combustion, electrochemical, semiconducting oxide sensors, and thermal conductivity detectors. The physical mechanism involved in hydrogen detection for each main category is discussed in detail. From an understanding of the detection mechanism, each category of sensor is evaluated for use in a variety of space and propulsion environments. In order to meet the needs of aerospace applications, the development of point-contact hydrogen sensors that are based on concepts beyond those used in commercial sensors is necessary.

Optical Fiber Grating Hydrogen Sensors: A Review

PubMed Central

Dai, Jixiang; Zhu, Li; Wang, Gaopeng; Xiang, Feng; Qin, Yuhuan; Wang, Min; Yang, Minghong

2017-01-01

In terms of hydrogen sensing and detection, optical fiber hydrogen sensors have been a research issue due to their intrinsic safety and good anti-electromagnetic interference. Among these sensors, hydrogen sensors consisting of fiber grating coated with sensitive materials have attracted intensive research interests due to their good reliability and distributed measurements. This review paper mainly focuses on optical fiber hydrogen sensors associated with fiber gratings and various materials. Their configurations and sensing performances proposed by different groups worldwide are reviewed, compared and discussed in this paper. Meanwhile, the challenges for fiber grating hydrogen sensors are also addressed. PMID:28287499

Optical Fiber Grating Hydrogen Sensors: A Review.

PubMed

Dai, Jixiang; Zhu, Li; Wang, Gaopeng; Xiang, Feng; Qin, Yuhuan; Wang, Min; Yang, Minghong

2017-03-12

In terms of hydrogen sensing and detection, optical fiber hydrogen sensors have been a research issue due to their intrinsic safety and good anti-electromagnetic interference. Among these sensors, hydrogen sensors consisting of fiber grating coated with sensitive materials have attracted intensive research interests due to their good reliability and distributed measurements. This review paper mainly focuses on optical fiber hydrogen sensors associated with fiber gratings and various materials. Their configurations and sensing performances proposed by different groups worldwide are reviewed, compared and discussed in this paper. Meanwhile, the challenges for fiber grating hydrogen sensors are also addressed.

Improvement on the electrical characteristics of Pd/HfO2/6H-SiC MIS capacitors using post deposition annealing and post metallization annealing

NASA Astrophysics Data System (ADS)

Esakky, Papanasam; Kailath, Binsu J.

2017-08-01

HfO2 as a gate dielectric enables high electric field operation of SiC MIS structure and as gas sensor HfO2/SiC capacitors offer higher sensitivity than SiO2/SiC capacitors. The issue of higher density of oxygen vacancies and associated higher leakage current necessitates better passivation of HfO2/SiC interface. Effect of post deposition annealing in N2O plasma and post metallization annealing in forming gas on the structural and electrical characteristics of Pd/HfO2/SiC MIS capacitors are reported in this work. N2O plasma annealing suppresses crystallization during high temperature annealing thereby improving the thermal stability and plasma annealing followed by rapid thermal annealing in N2 result in formation of Hf silicate at the HfO2/SiC interface resulting in order of magnitude lower density of interface states and gate leakage current. Post metallization annealing in forming gas for 40 min reduces interface state density by two orders while gate leakage current density is reduced by thrice. Post deposition annealing in N2O plasma and post metallization annealing in forming gas are observed to be effective passivation techniques improving the electrical characteristics of HfO2/SiC capacitors.

Displacement damage dose and implantation temperature effects on the trapping and release of deuterium implanted into SiC

NASA Astrophysics Data System (ADS)

Muñoz, P.; García-Cortés, I.; Sánchez, F. J.; Moroño, A.; Malo, M.; Hodgson, E. R.

2017-09-01

Radiation damage to flow channel insert (FCI) materials is an important issue for the concept of dual-coolant blanket development in future fusion devices. Silicon Carbide (SiC) is one of the most suitable materials for FCI. Because of the severe radiation environment and exposure to tritium during operation it is of fundamental importance to study hydrogen isotope trapping and release in these materials. Here the trapping, detrapping, and diffusion of deuterium implanted into SiC is studied in correlation with pre- and post-damage induced under different conditions. For this, SiC samples are pre-damaged with 50 keV Ne+ ions at different temperatures (20, 200, 450, 700 °C) to different damage doses (1, 3.6, 7 dpa). Next, deuterium is introduced into the samples at 450 °C by ion implantation at 7 keV. The implanted deuterium retained in the sample is analysed using secondary ion mass spectrometry (SIMS) and thermo-stimulated desorption (TSD) measurements. The results indicate that with increasing neon damage dose, the maximum deuterium desorption occurs at higher temperatures. In contrast, when increasing neon implantation temperature for a fixed dose, the maximum deuterium desorption release temperature decreases. It is interpreted that the neon bombardment produces thermally stable traps for hydrogen isotopes and the stability of this damage increases with neon pre-implantation dose. A decrease of the trapping of implanted deuterium is also observed to occur due to damage recovery by thermal annealing during pre-implantation at the higher temperatures. Finally, direct particle bombardment induced deuterium release is also observed.

Amplifiers dedicated for large area SiC photodiodes

NASA Astrophysics Data System (ADS)

Doroz, P.; Duk, M.; Korwin-Pawlowski, M. L.; Borecki, M.

2016-09-01

Large area SiC photodiodes find applications in optoelectronic sensors working at special conditions. These conditions include detection of UV radiation in harsh environment. Moreover, the mentioned sensors have to be selective and resistant to unwanted signals. For this purpose, the modulation of light at source unit and the rejection of constant current and low frequency component of signal at detector unit are used. The popular frequency used for modulation in such sensor is 1kHz. The large area photodiodes are characterized by a large capacitance and low shunt resistance that varies with polarization of the photodiode and can significantly modify the conditions of signal pre-amplification. In this paper two pre-amplifiers topology are analyzed: the transimpedance amplifier and the non-inverting voltage to voltage amplifier with negative feedback. The feedback loops of both pre-amplifiers are equipped with elements used for initial constant current and low frequency signals rejections. Both circuits are analyzed and compared using simulation and experimental approaches.

Optical hydrogen sensors based on metal-hydrides

NASA Astrophysics Data System (ADS)

Slaman, M.; Westerwaal, R.; Schreuders, H.; Dam, B.

2012-06-01

For many hydrogen related applications it is preferred to use optical hydrogen sensors above electrical systems. Optical sensors reduce the risk of ignition by spark formation and are less sensitive to electrical interference. Currently palladium and palladium alloys are used for most hydrogen sensors since they are well known for their hydrogen dissociation and absorption properties at relatively low temperatures. The disadvantages of palladium in sensors are the low optical response upon hydrogen loading, the cross sensitivity for oxygen and carbon, the limited detection range and the formation of micro-cracks after some hydrogen absorption/desorption cycles. In contrast to Pd, we find that the use of magnesium or rear earth bases metal-hydrides in optical hydrogen sensors allow tuning of the detection levels over a broad pressure range, while maintaining a high optical response. We demonstrate a stable detection layer for detecting hydrogen below 10% of the lower explosion limit in an oxygen rich environment. This detection layer is deposited at the bare end of a glass fiber as a micro-mirror and is covered with a thin layer of palladium. The palladium layer promotes the hydrogen uptake at room temperature and acts as a hydrogen selective membrane. To protect the sensor for a long time in air a final layer of a hydrophobic fluorine based coating is applied. Such a sensor can be used for example as safety detector in automotive applications. We find that this type of fiber optic hydrogen sensor is also suitable for hydrogen detection in liquids. As example we demonstrate a sensor for detecting a broad range of concentrations in transformer oil. Such a sensor can signal a warning when sparks inside a high voltage power transformer decompose the transformer oil over a long period.

Silicon Carbide Epitaxial Films Studied by Atomic Force Microscopy

NASA Technical Reports Server (NTRS)

1996-01-01

Silicon carbide (SiC) holds great potential as an electronic material because of its wide band gap energy, high breakdown electric field, thermal stability, and resistance to radiation damage. Possible aerospace applications of high-temperature, high-power, or high-radiation SiC electronic devices include sensors, control electronics, and power electronics that can operate at temperatures up to 600 C and beyond. Commercially available SiC devices now include blue light-emitting diodes (LED's) and high-voltage diodes for operation up to 350 C, with other devices under development. At present, morphological defects in epitaxially grown SiC films limit their use in device applications. Research geared toward reducing the number of structural inhomogeneities can benefit from an understanding of the type and nature of problems that cause defects. The Atomic Force Microscope (AFM) has proven to be a useful tool in characterizing defects present on the surface of SiC epitaxial films. The in-house High-Temperature Integrated Electronics and Sensors (HTIES) Program at the NASA Lewis Research Center not only extended the dopant concentration range achievable in epitaxial SiC films, but it reduced the concentration of some types of defects. Advanced structural characterization using the AFM was warranted to identify the type and structure of the remaining film defects and morphological inhomogeneities. The AFM can give quantitative information on surface topography down to molecular scales. Acquired, in part, in support of the Advanced High Temperature Engine Materials Technology Program (HITEMP), the AFM had been used previously to detect partial fiber debonding in composite material cross sections. Atomic force microscopy examination of epitaxial SiC film surfaces revealed molecular-scale details of some unwanted surface features. Growth pits propagating from defects in the substrate, and hillocks due, presumably, to existing screw dislocations in the substrates, were imaged. Away from local defects, step bunching was observed to yield step heights of hundreds of angstroms, with possible implications for the uniformity of dopants incorporated in SiC devices during fabrication. The quantitative topographic data from the AFM allow the relevant defect information to be extracted, such as the size and distribution of step bunching and the Burgers vector of screw dislocations. These atomic force microscopy results have furthered the understanding of the dynamic epitaxial SiC growth process. A model describing the observed hillock step bunching has been proposed. This cooperation between researchers involved in crystal growth, electronic device fabrication, and surface structural characterization is likely to continue as atomic force microscopy is used to improve SiC films for high-temperature electronic devices for NASA's advanced turbine engines and space power devices, as well as for future applications in the automotive industry.

Sensors Increase Productivity in Harsh Environments

NASA Technical Reports Server (NTRS)

2008-01-01

California's San Juan Capistrano-based Endevco Corporation licensed three patents covering high-temperature, harsh-environment silicon carbide (Si-C) pressure sensors from Glenn Research Center. The company is exploring their use in government markets, as well as in commercial markets, including commercial jet testing, deep well drilling applications where pressure and temperature increase with drilling depth, and in automobile combustion chambers.

The development of a solid-state hydrogen sensor for rocket engine leakage detection

NASA Technical Reports Server (NTRS)

Liu, Chung-Chiun

1994-01-01

Hydrogen propellant leakage poses significant operational problems in the rocket propulsion industry as well as for space exploratory applications. Vigorous efforts have been devoted to minimizing hydrogen leakage in assembly, test, and launch operations related to hydrogen propellant. The objective has been to reduce the operational cost of assembling and maintaining hydrogen delivery systems. Specifically, efforts have been made to develop a hydrogen leak detection system for point-contact measurement. Under the auspices of Lewis Research Center, the Electronics Design Center at Case Western Reserve University, Cleveland, Ohio, has undertaken the development of a point-contact hydrogen gas sensor with potential applications to the hydrogen propellant industry. We envision a sensor array consisting of numbers of discrete hydrogen sensors that can be located in potential leak sites. Silicon-based microfabrication and micromachining techniques are used in the fabrication of these sensor prototypes. Evaluations of the sensor are carried out in-house at Case Western Reserve University as well as at Lewis Research Center and GenCorp Aerojet, Sacramento, California. The hydrogen gas sensor is not only applicable in a hydrogen propulsion system, but also usable in many other civilian and industrial settings. This includes vehicles or facility use, or in the production of hydrogen gas. Dual space and commercial uses of these point-contacted hydrogen sensors are feasible and will directly meet the needs and objectives of NASA as well as various industrial segments.

The development of a solid-state hydrogen sensor for rocket engine leakage detection

NASA Astrophysics Data System (ADS)

Liu, Chung-Chiun

Hydrogen propellant leakage poses significant operational problems in the rocket propulsion industry as well as for space exploratory applications. Vigorous efforts have been devoted to minimizing hydrogen leakage in assembly, test, and launch operations related to hydrogen propellant. The objective has been to reduce the operational cost of assembling and maintaining hydrogen delivery systems. Specifically, efforts have been made to develop a hydrogen leak detection system for point-contact measurement. Under the auspices of Lewis Research Center, the Electronics Design Center at Case Western Reserve University, Cleveland, Ohio, has undertaken the development of a point-contact hydrogen gas sensor with potential applications to the hydrogen propellant industry. We envision a sensor array consisting of numbers of discrete hydrogen sensors that can be located in potential leak sites. Silicon-based microfabrication and micromachining techniques are used in the fabrication of these sensor prototypes. Evaluations of the sensor are carried out in-house at Case Western Reserve University as well as at Lewis Research Center and GenCorp Aerojet, Sacramento, California. The hydrogen gas sensor is not only applicable in a hydrogen propulsion system, but also usable in many other civilian and industrial settings. This includes vehicles or facility use, or in the production of hydrogen gas. Dual space and commercial uses of these point-contacted hydrogen sensors are feasible and will directly meet the needs and objectives of NASA as well as various industrial segments.

Micro-machined thin film hydrogen gas sensor, and method of making and using the same

NASA Technical Reports Server (NTRS)

DiMeo, Jr., Frank (Inventor); Bhandari, Gautam (Inventor)

2001-01-01

A hydrogen sensor including a thin film sensor element formed, e.g., by metalorganic chemical vapor deposition (MOCVD) or physical vapor deposition (PVD), on a microhotplate structure. The thin film sensor element includes a film of a hydrogen-interactive metal film that reversibly interacts with hydrogen to provide a correspondingly altered response characteristic, such as optical transmissivity, electrical conductance, electrical resistance, electrical capacitance, magnetoresistance, photoconductivity, etc., relative to the response characteristic of the film in the absence of hydrogen. The hydrogen-interactive metal film may be overcoated with a thin film hydrogen-permeable barrier layer to protect the hydrogen-interactive film from deleterious interaction with non-hydrogen species. The hydrogen sensor of the invention may be usefully employed for the detection of hydrogen in an environment susceptible to the incursion or generation of hydrogen and may be conveniently configured as a hand-held apparatus.

Microfabricated Hydrogen Sensor Technology for Aerospace and Commercial Applications

NASA Technical Reports Server (NTRS)

Hunter, Gary W.; Bickford, R. L.; Jansa, E. D.; Makel, D. B.; Liu, C. C.; Wu, Q. H.; Powers, W. T.

1994-01-01

Leaks on the Space Shuttle while on the Launch Pad have generated interest in hydrogen leak monitoring technology. An effective leak monitoring system requires reliable hydrogen sensors, hardware, and software to monitor the sensors. The system should process the sensor outputs and provide real-time leak monitoring information to the operator. This paper discusses the progress in developing such a complete leak monitoring system. Advanced microfabricated hydrogen sensors are being fabricated at Case Western Reserve University (CWRU) and tested at NASA Lewis Research Center (LeRC) and Gencorp Aerojet (Aerojet). Changes in the hydrogen concentrations are detected using a PdAg on silicon Schottky diode structure. Sensor temperature control is achieved with a temperature sensor and heater fabricated onto the sensor chip. Results of the characterization of these sensors are presented. These sensors can detect low concentrations of hydrogen in inert environments with high sensitivity and quick response time. Aerojet is developing the hardware and software for a multipoint leak monitoring system designed to provide leak source and magnitude information in real time. The monitoring system processes data from the hydrogen sensors and presents the operator with a visual indication of the leak location and magnitude. Work has commenced on integrating the NASA LeRC-CWRU hydrogen sensors with the Aerojet designed monitoring system. Although the leak monitoring system was designed for hydrogen propulsion systems, the possible applications of this monitoring system are wide ranged. Possible commercialization of the system will also be discussed.

A kinetic and equilibrium analysis of silicon carbide chemical vapor deposition on monofilaments

NASA Technical Reports Server (NTRS)

Gokoglu, S. A.; Kuczmarski, M. A.

1993-01-01

Chemical kinetics of atmospheric pressure silicon carbide (SiC) chemical vapor deposition (CVD) from dilute silane and propane source gases in hydrogen is numerically analyzed in a cylindrical upflow reactor designed for CVD on monofilaments. The chemical composition of the SiC deposit is assessed both from the calculated total fluxes of carbon and silicon and from chemical equilibrium considerations for the prevailing temperatures and species concentrations at and along the filament surface. The effects of gas and surface chemistry on the evolution of major gas phase species are considered in the analysis.

Multi-Functional, Micro Electromechanical Silicon Carbide Accelerometer

NASA Technical Reports Server (NTRS)

Okojie, Robert S. (Inventor)

2004-01-01

A method of bulk manufacturing SiC sensors is disclosed and claimed. Materials other than SiC may be used as the substrate material. Sensors requiring that the SiC substrate be pierced are also disclosed and claimed. A process flow reversal is employed whereby the metallization is applied first before the recesses are etched into or through the wafer. Aluminum is deposited on the entire planar surface of the metallization. Photoresist is spun onto the substantially planar surface of the Aluminum which is subsequently masked (and developed and removed). Unwanted Aluminum is etched with aqueous TMAH and subsequently the metallization is dry etched. Photoresist is spun onto the still substantially planar surface of Aluminum and oxide and then masked (and developed and removed) leaving the unimidized photoresist behind. Next, ITO is applied over the still substantially planar surface of Aluminum, oxide and unimidized photoresist. Unimidized and exposed photoresist and ITO directly above it are removed with Acetone. Next, deep reactive ion etching attacks exposed oxide not protected by ITO. Finally, hot phosphoric acid removes the Al and ITO enabling wires to connect with the metallization. The back side of the SiS wafer may be also etched.

SiC Technology

NASA Technical Reports Server (NTRS)

Neudeck, Philip G.

1998-01-01

Silicon carbide (SiC)-based semiconductor electronic devices and circuits are presently being developed for use in high-temperature, high-power, and/or high-radiation conditions under which conventional semiconductors cannot adequately perform. Silicon carbide's ability to function under such extreme conditions is expected to enable significant improvements to a far-ranging variety of applications and systems. These range from greatly improved high-voltage switching [1- 4] for energy savings in public electric power distribution and electric motor drives to more powerful microwave electronics for radar and communications [5-7] to sensors and controls for cleaner-burning more fuel-efficient jet aircraft and automobile engines. In the particular area of power devices, theoretical appraisals have indicated that SiC power MOSFET's and diode rectifiers would operate over higher voltage and temperature ranges, have superior switching characteristics, and yet have die sizes nearly 20 times smaller than correspondingly rated silicon-based devices [8]. However, these tremendous theoretical advantages have yet to be realized in experimental SiC devices, primarily due to the fact that SiC's relatively immature crystal growth and device fabrication technologies are not yet sufficiently developed to the degree required for reliable incorporation into most electronic systems [9]. This chapter briefly surveys the SiC semiconductor electronics technology. In particular, the differences (both good and bad) between SiC electronics technology and well-known silicon VLSI technology are highlighted. Projected performance benefits of SiC electronics are highlighted for several large-scale applications. Key crystal growth and device-fabrication issues that presently limit the performance and capability of high temperature and/or high power SiC electronics are identified.

Fabrication method for a room temperature hydrogen sensor

NASA Technical Reports Server (NTRS)

Shukla, Satyajit V. (Inventor); Cho, Hyoung (Inventor); Seal, Sudipta (Inventor); Ludwig, Lawrence (Inventor)

2011-01-01

A sensor for selectively determining the presence and measuring the amount of hydrogen in the vicinity of the sensor. The sensor comprises a MEMS device coated with a nanostructured thin film of indium oxide doped tin oxide with an over layer of nanostructured barium cerate with platinum catalyst nanoparticles. Initial exposure to a UV light source, at room temperature, causes burning of organic residues present on the sensor surface and provides a clean surface for sensing hydrogen at room temperature. A giant room temperature hydrogen sensitivity is observed after making the UV source off. The hydrogen sensor of the invention can be usefully employed for the detection of hydrogen in an environment susceptible to the incursion or generation of hydrogen and may be conveniently used at room temperature.

Characterization of a-SiC:H films produced in a standard plasma enhanced chemical vapor deposition system for x-ray mask application

NASA Astrophysics Data System (ADS)

Jean, A.; Chaker, M.; Diawara, Y.; Leung, P. K.; Gat, E.; Mercier, P. P.; Pépin, H.; Gujrathi, S.; Ross, G. G.; Kieffer, J. C.

1992-10-01

Hydrogenated amorphous a-SixC1-x:H films with various compositions (0.2≤x≤0.8) were prepared by a radio frequency (rf 100 kHz) glow discharge decomposition of a silane and methane mixture diluted in argon. The deposition system used was a commercially available plasma enhanced chemical vapor deposition reactor allowing a high throughput (22 wafers of 4 in. diameter each run). The properties of the films such as thickness, density, and stress were investigated. The composition, including hydrogen content and Si/C ratio, and the structure of the films were systematically examined by means of several diagnostics including electron recoil detection, x-ray photoelectron spectroscopy, and infrared (IR) absorption analysis. Thickness and density of the films were dependent on the film composition, while the stress of the films was highly compressive (3×109-1×1010 dynes/cm2). Density was about 2.4 g/cm3 for nearly stoichiometric SiC films. The hydrogen content of the films was practically constant at 27 at. % over the whole investigated composition range. The IR analyses suggested that the structure of the silicon carbide films is inorganic-like over the whole range of compositions. From stoichiometric to carbon-rich films, the structure mainly consists of a tetrahedral network where silicon atoms are randomly replaced by carbon atoms and one hydrogen atom is bonded to silicon (SiH group). However, the presence of SiH2 groups and microvoids was observed in the structure of Si-rich silicon carbide films. Finally, the development of SiC membranes for x-ray lithography was presented including the control of film stress by means of rapid thermal annealing. Silicon carbide membranes of relatively high surface area (32×32 mm2) and showing high optical transparency (80%) were successfully fabricated.

Flight Hydrogen Sensor for use in the ISS Oxygen Generation Assembly

NASA Technical Reports Server (NTRS)

MSadoques, George, Jr.; Makel, Darby B.

2005-01-01

This paper provides a description of the hydrogen sensor Orbital Replacement Unit (ORU) used on the Oxygen Generation Assembly (OGA), to be operated on the International Space Station (ISS). The hydrogen sensor ORU is being provided by Makel Engineering, Inc. (MEI) to monitor the oxygen outlet for the presence of hydrogen. The hydrogen sensor ORU is a triple redundant design where each sensor converts raw measurements to actual hydrogen partial pressure that is reported to the OGA system controller. The signal outputs are utilized for system shutdown in the event that the hydrogen concentration in the oxygen outlet line exceeds the specified shutdown limit. Improvements have been made to the Micro-Electro-Mechanical Systems (MEMS) based sensing element, screening, and calibration process to meet OGA operating requirements. Two flight hydrogen sensor ORUs have successfully completed the acceptance test phase. This paper also describes the sensor s performance during acceptance testing, additional tests planned to extend the operational performance calibration cycle, and integration with the OGA system.

Sensitive Capacitive-type Hydrogen Sensor Based on Ni Thin Film in Different Hydrogen Concentrations.

PubMed

Pour, Ghobad Behzadi; Aval, Leila Fekri; Eslami, Shahnaz

2018-04-01

Hydrogen sensors are micro/nano-structure that are used to locate hydrogen leaks. They are considered to have fast response/recovery time and long lifetime as compared to conventional gas sensors. In this paper, fabrication of sensitive capacitive-type hydrogen gas sensor based on Ni thin film has been investigated. The C-V curves of the sensor in different hydrogen concentrations have been reported. Dry oxidation was done in thermal chemical vapor deposition furnace (TCVD). For oxidation time of 5 min, the oxide thickness was 15 nm and for oxidation time 10 min, it was 20 nm. The Ni thin film as a catalytic metal was deposited on the oxide film using electron gun deposition. Two MOS sensors were compared with different oxide film thickness and different hydrogen concentrations. The highest response of the two MOS sensors with 15 nm and 20 nm oxide film thickness in 4% hydrogen concentration was 87.5% and 65.4% respectively. The fast response times for MOS sensors with 15 nm and 20 nm oxide film thickness in 4% hydrogen concentration was 8 s and 21 s, respectively. By increasing the hydrogen concentration from 1% to 4%, the response time for MOS sensor (20nm oxide thickness), was decreased from 28s to 21s. The recovery time was inversely increased from 237s to 360s. The experimental results showed that the MOS sensor based on Ni thin film had a quick response and a high sensitivity.

Micro-structured femtosecond laser assisted FBG hydrogen sensor.

PubMed

Karanja, Joseph Muna; Dai, Yutang; Zhou, Xian; Liu, Bin; Yang, Minghong

2015-11-30

We discuss hydrogen sensors based on fiber Bragg gratings (FBGs) micro-machined by femtosecond laser to form microgrooves and sputtered with Pd/Ag composite film. The atomic ratio of the two metals is controlled at Pd:Ag = 3:1. At room temperature, the hydrogen sensitivity of the sensor probe micro-machined by 75 mW laser power and sputtered with 520 nm of Pd/Ag film is 16.5 pm/%H. Comparably, the standard FBG hydrogen sensitivity becomes 2.5 pm/%H towards the same 4% hydrogen concentration. At an ambient temperature of 35°C, the processed sensor head has a dramatic rise in hydrogen sensitivity. Besides, the sensor shows good response and repeatability during hydrogen concentration test.

Hydrogen gas sensor and method of manufacture

DOEpatents

McKee, John M.

1991-01-01

A sensor for measuring the pressure of hydrogen gas in a nuclear reactor, and method of manufacturing the same. The sensor comprises an elongated tube of hydrogen permeable material which is connected to a pressure transducer through a feedthrough tube which passes through a wall at the boundary of the region in which hydrogen is present. The tube is pressurized and flushed with hydrogen gas at an elevated temperature during the manufacture of the sensor in order to remove all gasses other than hydrogen from the device.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Nabeel A. Riza

The goals of the Year 2006 Continuation Phase 2 three months period (April 1 to Sept. 30) of this project were to (a) conduct a probe elements industrial environment feasibility study and (b) fabricate embedded optical phase or microstructured SiC chips for individual gas species sensing. Specifically, SiC chips for temperature and pressure probe industrial applications were batch fabricated. Next, these chips were subject to a quality test for use in the probe sensor. A batch of the best chips for probe design were selected and subject to further tests that included sensor performance based on corrosive chemical exposure, powermore » plant soot exposure, light polarization variations, and extreme temperature soaking. Experimental data were investigated in detail to analyze these mentioned industrial parameters relevant to a power plant. Probe design was provided to overcome mechanical vibrations. All these goals have been achieved and are described in detail in the report. The other main focus of the reported work is to modify the SiC chip by fabricating an embedded optical phase or microstructures within the chip to enable gas species sensing under high temperature and pressure. This has been done in the Kar UCF Lab. using a laser-based system whose design and operation is explained. Experimental data from the embedded optical phase-based chip for changing temperatures is provided and shown to be isolated from gas pressure and species. These design and experimentation results are summarized to give positive conclusions on the proposed high temperature high pressure gas species detection optical sensor technology.« less

Benzene Adsorption on C24, Si@C24, Si-Doped C24, and C20 Fullerenes

NASA Astrophysics Data System (ADS)

Baei, Mohammad T.

2017-12-01

The absorption feasibility of benzene molecule in the C24, Si@C24, Si-doped C24, and C20 fullerenes has been studied based on calculated electronic properties of these fullerenes using Density functional Theory (DFT). It is found that energy of benzene adsorption on C24, Si@C24, and Si-doped C24 fullerenes were in range of -2.93 and -51.19 kJ/mol with little changes in their electronic structure. The results demonstrated that the C24, Si@C24, and Si-doped C24 fullerenes cannot be employed as a chemical adsorbent or sensor for benzene. Silicon doping cannot significantly modify both the electronic properties and benzene adsorption energy of C24 fullerene. On the other hand, C20 fullerene exhibits a high sensitivity, so that the energy gap of the fullerene is changed almost 89.19% after the adsorption process. We concluded that the C20 fullerene can be employed as a reliable material for benzene detection.

Silicon carbide novel optical sensor for combustion systems and nuclear reactors

NASA Astrophysics Data System (ADS)

Lim, Geunsik; Kar, Aravinda

2014-09-01

Crystalline silicon carbide is a wide bandgap semiconductor material with excellent optical properties, chemical inertness, radiation hardness and high mechanical strength at high temperatures. It is an excellent material platform for sensor applications in harsh environments such as combustion systems and nuclear reactors. A laser doping technique is used to fabricate SiC sensors for different combustion gases such as CO2, CO, NO and NO2. The sensor operates based on the principle of semiconductor optics, producing optical signal in contrast to conventional electrical sensors that produces electrical signal. The sensor response is measured with a low power He-Ne or diode laser.

Fluidic hydrogen detector production prototype development

NASA Technical Reports Server (NTRS)

Roe, G. W.; Wright, R. E.

1976-01-01

A hydrogen gas sensor that can replace catalytic combustion sensors used to detect leaks in the liquid hydrogen transfer systems at Kennedy Space Center was developed. A fluidic sensor concept, based on the principle that the frequency of a fluidic oscillator is proportional to the square root of the molecular weight of its operating fluid, was utilized. To minimize sensitivity to pressure and temperature fluctuations, and to make the sensor specific for hydrogen, two oscillators are used. One oscillator operates on sample gas containing hydrogen, while the other operates on sample gas with the hydrogen converted to steam. The conversion is accomplished with a small catalytic converter. The frequency difference is taken, and the hydrogen concentration computed with a simple digital processing circuit. The output from the sensor is an analog signal proportional to hydrogen content. The sensor is shown to be accurate and insensitive to severe environmental disturbances. It is also specific for hydrogen, even with large helium concentrations in the sample gas.

Nanoparticles and nanorods of silicon carbide from the residues of corn

NASA Astrophysics Data System (ADS)

Qadri, S. B.; Gorzkowski, E.; Rath, B. B.; Feng, J.; Qadri, S. N.; Kim, H.; Caldwell, J. D.; Imam, M. A.

2015-01-01

We have investigated the thermally induced transformation of various residues of the corn plant into nanoparticles and nanorods of different silicon carbide (SiC) polytypes. This has been accomplished by both microwave-induced and conventional furnace pyrolysis in excess of 1450 °C in an inert atmosphere. This simple process of producing nanoparticles of different polytypes of SiC from the corn plant opens a new method of utilizing agricultural waste to produce viable industrial products that are technologically important for nanoelectronics, molecular sensors, nanophotonics, biotechnology, and other mechanical applications. Using x-ray and Raman scattering characterization, we have demonstrated that the processed samples of corn husk, leaves, stalks, and cob consist of SiC nanostructures of the 2H, 3C, 4H, and 6H polytypes.

Synthesis of microsphere silicon carbide/nanoneedle manganese oxide composites and their electrochemical properties as supercapacitors

NASA Astrophysics Data System (ADS)

Kim, Myeongjin; Yoo, Youngjae; Kim, Jooheon

2014-11-01

Synthesis of microsphere silicon carbide/nanoneedle MnO2 (SiC/N-MnO2) composites for use as high-performance materials in supercapacitors is reported herein. The synthesis procedure involves the initial treatment of silicon carbide (SiC) with hydrogen peroxide to obtain oxygen-containing functional groups to provide anchoring sites for connection of SiC and the MnO2 nanoneedles (N-MnO2). MnO2 nanoneedles are subsequently formed on the SiC surface. The morphology and microstructure of the as-prepared composites are characterized via X-ray diffractometry, field-emission scanning electron microscopy, thermogravimetric analysis, and X-ray photoelectron spectroscopy. The characterizations indicate that MnO2 nanoneedles are homogeneously formed on the SiC surface in the composite. The capacitive properties of the as-prepared SiC/N-MnO2 electrodes are evaluated using cyclic voltammetry, galvanostatic charge/discharge testing, and electrochemical impedance spectroscopy in a three-electrode experimental setup using a 1-M Na2SO4 aqueous solution as the electrolyte. The SiC/N-MnO2(5) electrode, for which the MnO2/SiC feed ratio is 5:1, displays a specific capacitance as high as 273.2 F g-1 at 10 mV s-1.

Fast neutron detection at near-core location of a research reactor with a SiC detector

NASA Astrophysics Data System (ADS)

Wang, Lei; Jarrell, Josh; Xue, Sha; Tan, Chuting; Blue, Thomas; Cao, Lei R.

2018-04-01

The measurable charged-particle produced from the fast neutron interactions with the Si and C nucleuses can make a wide bandgap silicon carbide (SiC) sensor intrinsically sensitive to neutrons. The 4H-SiC Schottky detectors have been fabricated and tested at up to 500 °C, presenting only a slightly degraded energy resolution. The response spectrum of the SiC detectors were also obtained by exposing the detectors to external neutron beam irradiation and at a near-core location where gamma-ray field is intense. The fast neutron flux of these two locations are ∼ 4 . 8 × 104cm-2 ṡs-1 and ∼ 2 . 2 × 107cm-2 ṡs-1, respectively. At the external beam location, a Si detector was irradiated side-by-side with SiC detector to disjoin the neutron response from Si atoms. The contribution of gamma ray, neutron scattering, and charged-particles producing reactions in the SiC was discussed. The fast neutron detection efficiencies were determined to be 6 . 43 × 10-4 for the external fast neutron beam irradiation and 6 . 13 × 10-6 for the near-core fast neutron irradiation.

Stretchable hydrogen sensors employing palladium nanosheets transferred onto an elastomeric substrate

NASA Astrophysics Data System (ADS)

Namgung, Gitae; Ta, Qui Thanh Hoai; Noh, Jin-Seo

2018-07-01

Stretchable hydrogen sensors were fabricated from Pd nanosheets that were transferred onto a PDMS substrate. To prepare the Pd nanosheets, a Pd thin film on PDMS was first biaxially stretched and then PDMS substrate was etched off. The size of Pd nanosheets decreased as the applied strain increased and the film thickness decreased. A transfer technique was utilized to implement the stretchable hydrogen sensors. The stretchable sensors exhibited negative response behaviors upon the exposure to hydrogen gas. Interestingly, the sensors worked even under large strains up to 30%, demonstrating a potential as a high-strain-tolerable hydrogen sensor for the first time.

High-efficient photo-electron transport channel in SiC constructed by depositing cocatalysts selectively on specific surface sites for visible-light H{sub 2} production

DOE Office of Scientific and Technical Information (OSTI.GOV)

Wang, Da; Peng, Yuan; Wang, Qi

2016-04-18

Control cocatalyst location on a metal-free semiconductor to promote surface charge transfer for decreasing the electron-hole recombination is crucial for enhancing solar energy conversion. Based on the findings that some metals have an affinity for bonding with the specific atoms of polar semiconductors at a heterostructure interface, we herein control Pt deposition selectively on the Si sites of a micro-SiC photocatalyst surface via in-situ photo-depositing. The Pt-Si bond forming on the interface constructs an excellent channel, which is responsible for accelerating photo-electron transfer from SiC to Pt and then reducing water under visible-light. The hydrogen production is enhanced by twomore » orders of magnitude higher than that of bare SiC, and 2.5 times higher than that of random-depositing nano-Pt with the same loading amount.« less

Editors' Choice—Field Trials Testing of Mixed Potential Electrochemical Hydrogen Safety Sensors at Commercial California Hydrogen Filling Stations

DOE PAGES

Brosha, Eric Lanich; Romero, Christopher Jesse; Poppe, Daniel; ...

2017-10-27

Hydrogen safety sensors must meet specific performance requirements, mandated by the U.S. Department of Energy, for hydrogen fueling station monitoring. Here, we describe the long-term performance of two zirconia-based mixed potential electrochemical hydrogen gas sensors, developed specifically with a high sensitivity to hydrogen, low cross-sensitivity, and fast response time. Over a two-year period, sensors with tin-doped indium oxide and strontium doped lanthanum chromite electrodes were deployed at two stations in four field trials tests conducted in Los Angeles. The sensors documented the existence of hydrogen plumes ranging in concentration from 100 to as high as 2700 ppm in the areamore » surrounding the dispenser, consistent with depressurization from 700 bar following vehicle refueling. As expected, the hydrogen concentration reported by the mixed potential sensors was influenced by wind direction. Baseline stability testing at a Chino, CA station showed no measureable baseline drift throughout 206 days of uninterrupted data acquisition. The high baseline stability, excellent correlation with logged fueling/depressurization events, and absence of false alarms suggest that the zirconia-based mixed potential sensor platform is a good candidate for protecting hydrogen infrastructure where frequent calibrations or sensor replacement to reduce the false alarm frequency have been shown to be cost prohibitive.« less

Editors' Choice—Field Trials Testing of Mixed Potential Electrochemical Hydrogen Safety Sensors at Commercial California Hydrogen Filling Stations

DOE Office of Scientific and Technical Information (OSTI.GOV)

Brosha, Eric Lanich; Romero, Christopher Jesse; Poppe, Daniel

Hydrogen safety sensors must meet specific performance requirements, mandated by the U.S. Department of Energy, for hydrogen fueling station monitoring. Here, we describe the long-term performance of two zirconia-based mixed potential electrochemical hydrogen gas sensors, developed specifically with a high sensitivity to hydrogen, low cross-sensitivity, and fast response time. Over a two-year period, sensors with tin-doped indium oxide and strontium doped lanthanum chromite electrodes were deployed at two stations in four field trials tests conducted in Los Angeles. The sensors documented the existence of hydrogen plumes ranging in concentration from 100 to as high as 2700 ppm in the areamore » surrounding the dispenser, consistent with depressurization from 700 bar following vehicle refueling. As expected, the hydrogen concentration reported by the mixed potential sensors was influenced by wind direction. Baseline stability testing at a Chino, CA station showed no measureable baseline drift throughout 206 days of uninterrupted data acquisition. The high baseline stability, excellent correlation with logged fueling/depressurization events, and absence of false alarms suggest that the zirconia-based mixed potential sensor platform is a good candidate for protecting hydrogen infrastructure where frequent calibrations or sensor replacement to reduce the false alarm frequency have been shown to be cost prohibitive.« less

A survey and analysis of experimental hydrogen sensors

NASA Technical Reports Server (NTRS)

Hunter, Gary W.

1992-01-01

In order to ascertain the applicability of hydrogen sensors to aerospace applications, a survey was conducted of promising experimental point-contact hydrogen sensors and their operation was analyzed. The techniques discussed are metal-oxide-semiconductor or MOS based sensors, catalytic resistor sensors, acoustic wave detectors, and pyroelectric detectors. All of these sensors depend on the interaction of hydrogen with Pd or a Pd-alloy. It is concluded that no single technique will meet the needs of aerospace applications but a combination of approaches is necessary. The most promising combination is an MOS based sensor with a catalytic resistor.

Covalently Bound Monomolecular Layers on Si Single Crystals

NASA Astrophysics Data System (ADS)

Chidsey, Christopher E. D.

1996-03-01

Methods and reagents borrowed from the molecular synthetic chemistry of silicon compounds have been used to form covalently bound monomolecular layers on silicon single crystals. Organic monolayers bound covalently to silicon could form the basis for silicon/organic interfaces useful in sensor structures. In a representative reaction, alkyl monolayers with densities approaching that of crystalline polyethylene have been prepared by the radical-initiated insertion of 1-alkenes into the Si-H bonds of hydrogen-terminated Si(111) surfaces footnote M. R. Linford, P. Fenter, P. M. Eisenberger and C. E. D Chidsey, J. Am. Chem. Soc. 117, 3145-3155 (1995). It has recently been found that this insertion reaction can also be initiated by illumination with UV light having sufficient energy to break the Si-H bond. Synchrotron-based high-resolution photoelectron spectroscopy and diffraction have demonstrated the expected Si-C bond in such monolayers footnote J. H. Terry, R. Cao, P. A. Pianetta, M. R. Linford and C. E. D. Chidsey, unpublished results. An alternate approach to similar monolayers has been found to be the chlorination of hydrogen-terminated Si(111) with Cl_2, followed by the nucleophilic displacement of chlorine with alkyl lithium reagents. The well-behaved chemical transformations of the hydrogen-terminated silicon surfaces appear to result from the essentially bulk termination of the silicon lattice with closed-shell silicon hydride "functional groups" on the surface. In addition to the formation of novel organic layers, a full understanding of the reactivity of the hydrogen-terminated silicon surfaces should lead to better control of key technological silicon interfaces such as Si/SiO_2, Si/epi-Si, and Si/metal.

Hydrogen Safety Sensor Performance and Use Gap Analysis: Preprint

DOE Office of Scientific and Technical Information (OSTI.GOV)

Buttner, William J; Burgess, Robert M; Schmidt, Kara

Hydrogen sensors are recognized as an important technology for facilitating the safe implementation of hydrogen as an alternative fuel, and there are numerous reports of a sensor alarm successfully preventing a potentially serious event. However, gaps in sensor metrological specifications, as well as in their performance for some applications, exist.The U.S. Department of Energy (DOE) Fuel Cell Technology Office published a short list of critical gaps in the 2007 and 2012 multiyear project plans; more detailed gap analyses were independently performed by the JRC and NREL. There have been, however, some significant advances in sensor technologies since these assessments, includingmore » the commercial availability of hydrogen sensors with fast response times (t90 less than 1 s, which had been an elusive DOE target since 2007), improved robustness to chemical poisons, improved selectivity, and improved lifetime and stability. These improvements, however, have not been universal and typically pertain to select platforms or models. Moreover, as hydrogen markets grow and new applications are being explored, more demands will be imposed on sensor performance. The hydrogen sensor laboratories at NREL and JRC are currently updating the hydrogen safety sensor gap analysis through direct interaction with international stakeholders in the hydrogen community, especially end-users. NREL and the JRC are currently organizing a series of workshops (in Europe and the U.S.) with sensor developers, end-users, and other stakeholders in 2017 to identify technology gaps and to develop a path forward to address them. One workshop is scheduled for May 10 in Brussels, Belgium at the Headquarters of the Fuel Cell and Hydrogen Joint Undertaking. A second workshop is planned at the National Renewable Energy Laboratory in Golden, CO, USA. This presentation will review improvements in sensor technologies in the past 5 to 10 years, identify gaps in sensor performance and use requirements, and identify potential research strategies to address the gaps. The presentation will also summarize the outcomes of the Hydrogen Sensors Workshops.« less

Optical cascaded Fabry-Perot interferometer hydrogen sensor based on vernier effect

NASA Astrophysics Data System (ADS)

Li, Yina; Zhao, Chunliu; Xu, Ben; Wang, Dongning; Yang, Minghong

2018-05-01

An optical cascaded Fabry-Perot interferometer hydrogen sensor based on vernier effect has been proposed and achieved. The proposed sensor, which total length is ∼594 μm, is composed of a segment of large mode area fiber (LMAF) and a segment of hollow-core fiber (HCF). The proposed sensor is coated with the Pt-loaded WO3/SiO2 powder which will result in the increase of local temperature of the sensor head when exposed to hydrogen atmosphere. Thus the hydrogen sensor can be achieved by monitoring the change of resonant envelope wavelength. The hydrogen sensitivity is -1.04 nm/% within the range of 0 % -2.4 % which is greatly improved because of the vernier effect. The response time is ∼80 s. Due to its compact configuration, the proposed sensor provides a feasible and miniature structure to achieve detection of hydrogen.

Hydrogen Research for Spaceport and Space-Based Applications: Hydrogen Sensors and Systems. Part 2

NASA Technical Reports Server (NTRS)

Anderson, Tim; Balaban, Canan

2008-01-01

The activities presented are a broad based approach to advancing key hydrogen related technologies in areas such as fuel cells, hydrogen production, and distributed sensors for hydrogen-leak detection, laser instrumentation for hydrogen-leak detection, and cryogenic transport and storage. Presented are the results from research projects, education and outreach activities, system and trade studies. The work will aid in advancing the state-of-the-art for several critical technologies related to the implementation of a hydrogen infrastructure. Activities conducted are relevant to a number of propulsion and power systems for terrestrial, aeronautics and aerospace applications. Sensor systems research was focused on hydrogen leak detection and smart sensors with adaptive feedback control for fuel cells. The goal was to integrate multifunction smart sensors, low-power high-efficiency wireless circuits, energy harvesting devices, and power management circuits in one module. Activities were focused on testing and demonstrating sensors in a realistic environment while also bringing them closer to production and commercial viability for eventual use in the actual operating environment.

Microstructure and Tribological Properties of AlCoCrFeNiTi0.5 High-Entropy Alloy in Hydrogen Peroxide Solution

NASA Astrophysics Data System (ADS)

Yu, Y.; Liu, W. M.; Zhang, T. B.; Li, J. S.; Wang, J.; Kou, H. C.; Li, J.

2014-01-01

Microstructure and tribological properties of an AlCoCrFeNiTi0.5 high-entropy alloy in high-concentration hydrogen peroxide solution were investigated in this work. The results show that the sigma phase precipitates and the content of bcc2 decrease during the annealing process. Meanwhile, the complex construction of the interdendrite region changes into simple isolated-island shape, and much more spherical precipitates are formed. Those changes of microstructure during the annealing process lead to the increase of hardness of this alloy. In the testing conditions, the AlCoCrFeNiTi0.5 alloy shows smoother worn surfaces and steadier coefficient of friction curves than does the 1Cr18Ni9Ti stainless steel, and SiC ceramic preserves better wear resistance than ZrO2 ceramic. After annealing, the wear resistance of the AlCoCrFeNiTi0.5 alloy increases coupled with SiC counterface but decreases with ZrO2 counterface.

MEMS for Practical Applications

NASA Astrophysics Data System (ADS)

Esashi, Masayoshi

Silicon MEMS as electrostatically levitated rotational gyroscopes and 2D optical scanners, and wafer level packaged devices as integrated capacitive pressure sensors and MEMS switches are described. MEMS which use non-silicon materials as LTCC with electrical feedthrough, SiC and LiNbO3 for probe cards for wafer-level burn-in test, molds for glass press molding and SAW wireless passive sensors respectively are also described.

Micro-Machined Thin Film Sensor Arrays For The Detection Of H2, Containing Gases, And Method Of Making And Using The Same.

DOEpatents

DiMeo, Jr., Frank; Baum, Thomas H.

2003-07-22

The present invention provides a hydrogen sensor including a thin film sensor element formed by metal organic chemical vapor deposition (MOCVD) or physical vapor deposition (PVD), on a micro-hotplate structure. The thin film sensor element includes a film of a hydrogen-interactive metal film that reversibly interacts with hydrogen to provide a correspondingly altered response characteristic, such as optical transmissivity, electrical conductance, electrical resistance, electrical capacitance, magneto resistance, photoconductivity, etc., relative to the response characteristic of the film in the absence of hydrogen. The hydrogen-interactive metal film may be overcoated with a thin film hydrogen-permeable barrier layer to protect the hydrogen-interactive film from deleterious interaction with non-hydrogen species. The hydrogen permeable barrier may comprise species to scavenge oxygen and other like species. The hydrogen sensor of the invention may be usefully employed for the detection of hydrogen in an environment susceptible to the incursion or generation of hydrogen and may be conveniently configured as a hand-held apparatus.

Application of polymer-coated metal-insulator-semiconductor sensors for the detection of dissolved hydrogen

NASA Astrophysics Data System (ADS)

Li, Dongmei; Medlin, J. W.; Bastasz, R.

2006-06-01

The detection of dissolved hydrogen in liquids is crucial to many industrial applications, such as fault detection for oil-filled electrical equipment. To enhance the performance of metal-insulator-semiconductor (MIS) sensors for dissolved hydrogen detection, a palladium MIS sensor has been modified by depositing a polyimide (PI) layer above the palladium surface. Response measurements of the PI-coated sensors in mineral oil indicate that hydrogen is sensitively detected, while the effect of interfering gases on sensor response is minimized.

Plasmonic hydrogen sensor based on integrated microring resonator

NASA Astrophysics Data System (ADS)

Yi, Ya Sha; Wu, Da Chuan

2017-12-01

We have proposed and demonstrated numerically an ultrasmall and highly sensitive plasmonic hydrogen sensor based on an integrated microring resonator, with a footprint size as small as 4×4 μm2. With a palladium (Pd) or platinum (Pt) hydrogen-sensitive layer coated on the inner surface of the microring resonator and the excitation of surface plasmon modes at the interface from the microring resonator waveguide, the device is highly sensitive to low hydrogen concentration variation, and the sensitivity is at least one order of magnitude larger than that of the optical fiber-based hydrogen sensor. We have also investigated the tradeoff between the portion coverage of the Pd/Pt layer and the sensitivity, as well as the width of the hydrogen-sensitive layer. This ultrasmall plasmonic hydrogen sensor holds promise for the realization of a highly compact sensor with integration capability for applications in hydrogen fuel economy.

Thin Film Heat Flux Sensor Development for Ceramic Matrix Composite (CMC) Systems

NASA Technical Reports Server (NTRS)

Wrbanek, John D.; Fralick, Gustave C.; Hunter, Gary W.; Zhu, Dongming; Laster, Kimala L.; Gonzalez, Jose M.; Gregory, Otto J.

2010-01-01

The NASA Glenn Research Center (GRC) has an on-going effort for developing high temperature thin film sensors for advanced turbine engine components. Stable, high temperature thin film ceramic thermocouples have been demonstrated in the lab, and novel methods of fabricating sensors have been developed. To fabricate thin film heat flux sensors for Ceramic Matrix Composite (CMC) systems, the rough and porous nature of the CMC system posed a significant challenge for patterning the fine features required. The status of the effort to develop thin film heat flux sensors specifically for use on silicon carbide (SiC) CMC systems with these new technologies is described.

OGS Hydrogen Sensor ORU R&R

NASA Image and Video Library

2012-04-18

ISS030-E-236919 (18 April 2012) --- NASA astronaut Dan Burbank, Expedition 30 commander, works with the Oxygen Generator System (OGS) rack in the Tranquility node of the International Space Station. Burbank unpowered the OGS, purged the hydrogen sensor Orbital Replacement Unit (ORU) with the Hydrogen Sensor ORU Purge Adapter (HOPA) for return to Earth, and replaced the hydrogen sensor with a new spare, then cleaned the rack Avionics Air Assembly (AAA).

Silicon Carbide Technology

NASA Technical Reports Server (NTRS)

Neudeck, Philip G.

2006-01-01

Silicon carbide based semiconductor electronic devices and circuits are presently being developed for use in high-temperature, high-power, and high-radiation conditions under which conventional semiconductors cannot adequately perform. Silicon carbide's ability to function under such extreme conditions is expected to enable significant improvements to a far-ranging variety of applications and systems. These range from greatly improved high-voltage switching for energy savings in public electric power distribution and electric motor drives to more powerful microwave electronics for radar and communications to sensors and controls for cleaner-burning more fuel-efficient jet aircraft and automobile engines. In the particular area of power devices, theoretical appraisals have indicated that SiC power MOSFET's and diode rectifiers would operate over higher voltage and temperature ranges, have superior switching characteristics, and yet have die sizes nearly 20 times smaller than correspondingly rated silicon-based devices [8]. However, these tremendous theoretical advantages have yet to be widely realized in commercially available SiC devices, primarily owing to the fact that SiC's relatively immature crystal growth and device fabrication technologies are not yet sufficiently developed to the degree required for reliable incorporation into most electronic systems. This chapter briefly surveys the SiC semiconductor electronics technology. In particular, the differences (both good and bad) between SiC electronics technology and the well-known silicon VLSI technology are highlighted. Projected performance benefits of SiC electronics are highlighted for several large-scale applications. Key crystal growth and device-fabrication issues that presently limit the performance and capability of high-temperature and high-power SiC electronics are identified.

NASA Sea Ice Validation Program for the Defense Meteorological Satellite Program Special Sensor Microwave Imager

NASA Technical Reports Server (NTRS)

Cavalieri, Donald J. (Editor); Crawford, John P.; Drinkwater, Mark R.; Emery, William J.; Eppler, Duane T.; Farmer, L. Dennis; Fowler, Charles W.; Goodberlet, Mark; Jentz, Robert R.; Milman, Andrew

1992-01-01

The history of the program is described along with the SSM/I sensor, including its calibration and geolocation correction procedures used by NASA, SSM/I data flow, and the NASA program to distribute polar gridded SSM/I radiances and sea ice concentrations (SIC) on CD-ROMs. Following a discussion of the NASA algorithm used to convert SSM/I radiances to SICs, results of 95 SSM/I-MSS Landsat IC comparisons for regions in both the Arctic and the Antarctic are presented. The Landsat comparisons show that the overall algorithm accuracy under winter conditions is 7 pct. on average with 4 pct. negative bias. Next, high resolution active and passive microwave image mosaics from coordinated NASA and Navy aircraft underflights over regions of the Beaufort and Chukchi seas in March 1988 were used to show that the algorithm multiyear IC accuracy is 11 pct. on average with a positive bias of 12 pct. Ice edge crossings of the Bering Sea by the NASA DC-8 aircraft were used to show that the SSM/I 15 pct. ice concentration contour corresponds best to the location of the initial bands at the ice edge. Finally, a summary of results and recommendations for improving the SIC retrievals from spaceborne radiometers are provided.

Laser erosion diagnostics of plasma facing materials with displacement sensors and their application to safeguard monitors to protect nuclear fusion chambers

NASA Astrophysics Data System (ADS)

Kasuya, Koichi; Motokoshi, Shinji; Taniguchi, Seiji; Nakai, Mitsuo; Tokunaga, Kazutoshi; Mroz, Waldemar; Budner, Boguslaw; Korczyc, Barbara

2015-02-01

Tungsten and SiC are candidates for the structural materials of the nuclear fusion reactor walls, while CVD poly-crystal diamond is candidate for the window material under the hazardous fusion stresses. We measured the surface endurance strength of such materials with commercial displacement sensors and our recent evaluation method. The pulsed high thermal input was put into the material surfaces by UV lasers, and the surface erosions were diagnosed. With the increase of the total number of the laser shots per position, the crater depth increased gradually. The 3D and 2D pictures of the craters were gathered and compared under various experimental conditions. For example, the maximum crater depths were plotted as a function of shot accumulated numbers, from which we evaluated the threshold thermal input for the surface erosions to be induced. The simple comparison-result showed that tungsten was stronger roughly two times than SiC. Then we proposed how to monitor the surface conditions of combined samples with such diamonds coated with thin tungsten layers, when we use such samples as parts of divertor inner walls, fusion chamber first walls, and various diagnostic windows. We investigated how we might be able to measure the inner surface erosions with the same kinds of displacement sensors. We found out the measurable maximum thickness of such diamond which is useful to monitor the erosion. Additionally we showed a new scheme of fusion reactor systems with injectors for anisotropic pellets and heating lasers under the probable use of W and/or SiC.

Characterization and Modeling of Electrical Response of Electrode Catalyzed Reactions in AIGaN/GaN-Based Gas Sensors

NASA Astrophysics Data System (ADS)

Melby, Jacob H.

AlGaN/GaN high electron mobility transistors (HEMT) and AlGaN/GaN diodes have promise for use as hydrogen and hydrocarbon sensors for a variety of industrial, military, and commercial applications. These semiconductor-based sensors have a number of advantages over other sensor technologies, such as the ability to operate at high temperatures, in corrosive environments, or under ionizing radiation. The high sensitivity of these devices to hydrogen-containing gases is associated with polarization differences within the AlGaN/GaN heterostructure that give rise to the formation of a two-dimensional electron gas (2DEG); exposure of the device to hydrogen changes the density of the 2DEG, which can be detected in a HEMT or diode structure. Although sensitivity to a range of gases has been reported, the factors that influence the behavior of the sensors are not well studied. The overarching goals of the research that follows were to determine how gas exposure conditions affect sensor behavior, to characterize and model the relationship between the electrical response of the sensors and the external gaseous environment, and to investigate the effects of using different metal catalysts on sensor behavior. The heterostructures used in this work were grown via metalorganic vapor phase epitaxy (MOVPE). Schottky diode and transistor devices employing platinum-group (Pd, Pt, Rh, Ir, Ru, and Os) catalysts were fabricated to allow electrical sensitivity in the presence of hydrogen and hydrogen containing gases. The generation of atomic hydrogen on the catalyst surface results in the rapid formation of hydrogen dipoles at the metal-semiconductor interface, which produces a measurable electronic response. The electrical response of Pt-gated HEMT-based sensors were measured in a flowing gaseous stream consisting of hydrogen in a pure nitrogen diluent at ambient and elevated temperatures. The transistors exhibited excellent transfer characteristics for temperatures ranging from 25°C to 125°C. The absolute current change was measured as a function of hydrogen concentration and compared with simulated curves based on the Langmuir isotherm and four other modified isotherms at a sensor temperature of 125°C. The sensor response was found to monotonically increase for a wide range of hydrogen concentrations (500 ppb to 5 vol%). It was found that the Langmuir isotherm, which treats all hydrogen binding sites as equivalent, was inadequate to describe the sensor response. A simple two-state model involving two distinct hydrogen binding states that have previously been observed in surface studies was found to adequately describe the response of these sensors from 500 ppb to 5 vol% hydrogen in nitrogen. Other modified Langmuir models were also analyzed and compared with the two-state model. While the models based on modified isotherms all yielded good fits to the data, the simpler two-state model (based upon a weakly bound and strongly bound hydrogen atom) and the Sips model (with distribution of states skewed towards higher binding energies) more closely match results from surface studies of dissociative desorption of hydrogen on Pt. Either of these models should therefore serve as a reasonable foundation for understanding and modeling the response of AlGaN/GaN-based hydrogen sensors with Pt catalysts. The electrical response of a Pt-gated HEMT-based sensor was also measured in a flowing gaseous stream consisting of hydrogen in air at elevated temperatures. The sensor response was found to monotonically increase for a narrow range of hydrogen pressures (1000 ppm to 4 vol%). Oxygen is found to decrease sensor response magnitude and increase the sensor response time. A modified Langmuir isotherm was found to adequately describe the influence of oxygen on a Pt-gated HEMT-based sensor under a narrow range of conditions. Additional sensor measurements were conducted on AlGaN/GaN diode sensors employing a variety of platinum-group catalysts. The influence of oxygen on the sensor response was found to be highly dependent upon the chemistry of hydrogen-oxygen interaction on the catalyst interface. A sensor diode array was fabricated using a ternary Pdx CuyAu1-x-y composition spread alloy catalyst and tested in a flowing gaseous stream consisting of pure hydrogen in nitrogen at room temperature. The resulting diode sensitivity was mapped as a function of composition and revealed intriguing hot spots of hydrogen sensitivity. Numerous technological challenges prevented further exploration of the ternary alloy spread; however, the preliminary results of this structure suggest that a reduction in hydrogen binding energy on the surface can result in a substantial increase in hydrogen dipoles at the metal semiconductor interface. Sensitivity to methane and ethylene was demonstrated using AlGaN/GaN-based sensors. Detection of methane and ethylene require elevated temperatures to break the C-H bond and produce atomic hydrogen. The sensor response is significantly more complicated than hydrogen and not always well-behaved with respect to temperature and time. XPS measurements conducted at CMU indicate a buildup of carbon on the platinum surface upon hydrocarbon exposure, trending toward a saturated carbon content. Lastly, operation of a diode sensor was examined in-situ under high hydrostatic pressure (2000psi) in both pure water and helium. Numerous stability issues were addressed in the course of these experiments. The steady-state influence of hydrostatic pressures on the diode sensor was found to be negligible in the absence of hydrogen. Hydrogen sensitivity was demonstrated in pure water with a hydrogen overpressure for devices employing an epoxy membrane. The same diode device failed to detect a large methane overpressure in water at room temperature and water at 80°C.

Packaging Technology Developed for High-Temperature Silicon Carbide Microsystems

NASA Technical Reports Server (NTRS)

Chen, Liang-Yu; Hunter, Gary W.; Neudeck, Philip G.

2001-01-01

High-temperature electronics and sensors are necessary for harsh-environment space and aeronautical applications, such as sensors and electronics for space missions to the inner solar system, sensors for in situ combustion and emission monitoring, and electronics for combustion control for aeronautical and automotive engines. However, these devices cannot be used until they can be packaged in appropriate forms for specific applications. Suitable packaging technology for operation temperatures up to 500 C and beyond is not commercially available. Thus, the development of a systematic high-temperature packaging technology for SiC-based microsystems is essential for both in situ testing and commercializing high-temperature SiC sensors and electronics. In response to these needs, researchers at Glenn innovatively designed, fabricated, and assembled a new prototype electronic package for high-temperature electronic microsystems using ceramic substrates (aluminum nitride and aluminum oxide) and gold (Au) thick-film metallization. Packaging components include a ceramic packaging frame, thick-film metallization-based interconnection system, and a low electrical resistance SiC die-attachment scheme. Both the materials and fabrication process of the basic packaging components have been tested with an in-house-fabricated SiC semiconductor test chip in an oxidizing environment at temperatures from room temperature to 500 C for more than 1000 hr. These test results set lifetime records for both high-temperature electronic packaging and high-temperature electronic device testing. As required, the thick-film-based interconnection system demonstrated low (2.5 times of the room-temperature resistance of the Au conductor) and stable (decreased 3 percent in 1500 hr of continuous testing) electrical resistance at 500 C in an oxidizing environment. Also as required, the electrical isolation impedance between printed wires that were not electrically joined by a wire bond remained high (greater than 0.4 GW) at 500 C in air. The attached SiC diode demonstrated low (less than 3.8 W/mm2) and relatively consistent dynamic resistance from room temperature to 500 C. These results indicate that the prototype package and the compatible die-attach scheme meet the initial design standards for high-temperature, low-power, and long-term operation. This technology will be further developed and evaluated, especially with more mechanical tests of each packaging element for operation at higher temperatures and longer lifetimes.

A finite element model of a MEMS-based surface acoustic wave hydrogen sensor.

PubMed

El Gowini, Mohamed M; Moussa, Walied A

2010-01-01

Hydrogen plays a significant role in various industrial applications, but careful handling and continuous monitoring are crucial since it is explosive when mixed with air. Surface Acoustic Wave (SAW) sensors provide desirable characteristics for hydrogen detection due to their small size, low fabrication cost, ease of integration and high sensitivity. In this paper a finite element model of a Surface Acoustic Wave sensor is developed using ANSYS12© and tested for hydrogen detection. The sensor consists of a YZ-lithium niobate substrate with interdigital electrodes (IDT) patterned on the surface. A thin palladium (Pd) film is added on the surface of the sensor due to its high affinity for hydrogen. With increased hydrogen absorption the palladium hydride structure undergoes a phase change due to the formation of the β-phase, which deteriorates the crystal structure. Therefore with increasing hydrogen concentration the stiffness and the density are significantly reduced. The values of the modulus of elasticity and the density at different hydrogen concentrations in palladium are utilized in the finite element model to determine the corresponding SAW sensor response. Results indicate that with increasing the hydrogen concentration the wave velocity decreases and the attenuation of the wave is reduced.

Characterization of 720 and 940 MHz Oscillators with Chip Antenna for Wireless Sensors from Room Temperature to 200 and 250 deg C

NASA Technical Reports Server (NTRS)

Scardelletti, Maximilian C.; Ponchak, George E.

2011-01-01

Oscillators that operate at 720 and 940 MHz and characterized over a temperature range of 25 C to 200 C and 250 C, respectively, are presented. The oscillators are designed on alumina substrates with typical integrated circuit fabrication techniques. Cree SiC MESFETs, thin film metal-insulator-metal capacitors and spiral inductors, and Johanson miniature chip antennas make-up the circuits. The output power and phase noise are presented as a function of temperature and frequency. Index Terms MESFETS, chip antennas, oscillators SiC alumina.

Reduction of structural defects in thick 4H-SiC epitaxial layers grown on 4° off-axis substrates

NASA Astrophysics Data System (ADS)

Yazdanfar, M.; Ivanov, I. G.; Pedersen, H.; Kordina, O.; Janzén, E.

2013-06-01

By carefully controlling the surface chemistry of the chemical vapor deposition process for silicon carbide (SiC), 100 μm thick epitaxial layers with excellent morphology were grown on 4° off-axis SiC substrates at growth rates exceeding 100 μm/h. In order to reduce the formation of step bunching and structural defects, mainly triangular defects, the effect of varying parameters such as growth temperature, C/Si ratio, Cl/Si ratio, Si/H2 ratio, and in situ pre-growth surface etching time are studied. It was found that an in-situ pre growth etch at growth temperature and pressure using 0.6% HCl in hydrogen for 12 min reduced the structural defects by etching preferentially on surface damages of the substrate surface. By then applying a slightly lower growth temperature of 1575 °C, a C/Si ratio of 0.8, and a Cl/Si ratio of 5, 100 μm thick, step-bunch free epitaxial layer with a minimum triangular defect density and excellent morphology could be grown, thus enabling SiC power device structures to be grown on 4° off axis SiC substrates.

Integrated multi-channel nano-engineered optical hydrogen and temperature sensor detection systems for launch vehicles

NASA Astrophysics Data System (ADS)

Alam, M. Z.; Moreno, J.; Aitchison, J. S.; Mojahedi, M.; Kazemi, A. A.

2008-08-01

Launch vehicles and other satellite users need launch services that are highly reliable, less complex, easier to test, and cost effective. Being a very small molecule, hydrogen is prone to leakage through seals and micro-cracks. Hydrogen detection in space application is very challenging; public acceptance of hydrogen fuel would require the integration of a reliable hydrogen safety sensor. For detecting leakage of cryogenic fluids in spaceport facilities, launch vehicle industry and aerospace agencies are currently relying heavily on the bulky mass spectrometers, which fill one or more equipment racks, and weigh several hundred kilograms. Therefore, there is a critical need for miniaturized sensors and instruments suitable for use in space applications. This paper describes a novel multi-channel integrated nano-engineered optical sensor to detect hydrogen and monitor the temperature. The integrated optic sensor is made of multi-channel waveguide elements that measure hydrogen concentration in real Time. Our sensor is based on the use of a high index waveguide with a Ni/Pd overlay to detect hydrogen. When hydrogen is absorbed into the Ni/Pd alloy there is a change in the absorption of the material and the optical signal in the waveguide is increased. Our design uses a thin alloy (few nanometers thick) overlay which facilitates the absorption of the hydrogen and will result in a response time of approximately few seconds. Like other Pd/Pd-Ni based sensors the device response varies with temperature and hence the effects of temperature variations must be taken into account. One solution to this problem is simultaneous measurement of temperature in addition to hydrogen concentration at the same vicinity. Our approach here is to propose a temperature sensor that can easily be integrated on the same platform as the hydrogen sensor reported earlier by our group. One suitable choice of material system is silicon on insulator (SOI). Here, we propose a micro ring resonators (MRR) based temperature sensor designed on SOI that measures temperature by monitoring the output optical power.

Downhole geothermal well sensors comprising a hydrogen-resistant optical fiber

DOEpatents

Weiss, Jonathan D.

2005-02-08

A new class of optical fiber based thermal sensors has been invented. The new sensors comprise hydrogen-resistant optical fibers which are able to withstand a hot, hydrogen-containing environment as is often found in the downhole well environment.

Formation of silicon nanocrystals in silicon carbide using flash lamp annealing

NASA Astrophysics Data System (ADS)

Weiss, Charlotte; Schnabel, Manuel; Prucnal, Slawomir; Hofmann, Johannes; Reichert, Andreas; Fehrenbach, Tobias; Skorupa, Wolfgang; Janz, Stefan

2016-09-01

During the formation of Si nanocrystals (Si NC) in SixC1-x layers via solid-phase crystallization, the unintended formation of nanocrystalline SiC reduces the minority carrier lifetime and therefore the performance of SixC1-x as an absorber layer in solar cells. A significant reduction in the annealing time may suppress the crystallization of the SiC matrix while maintaining the formation of Si NC. In this study, we investigated the crystallization of stoichiometric SiC and Si-rich SiC using conventional rapid thermal annealing (RTA) and nonequilibrium millisecond range flash lamp annealing (FLA). The investigated SixC1-x films were prepared by plasma-enhanced chemical vapor deposition and annealed at temperatures from 700 °C to 1100 °C for RTA and at flash energies between 34 J/cm2 and 62 J/cm2 for FLA. Grazing incidence X-ray diffraction and Fourier transformed infrared spectroscopy were conducted to investigate hydrogen effusion, Si and SiC NC growth, and SiC crystallinity. Both the Si content and the choice of the annealing process affect the crystallization behavior. It is shown that under certain conditions, FLA can be successfully utilized for the formation of Si NC in a SiC matrix, which closely resembles Si NC in a SiC matrix achieved by RTA. The samples must have excess Si, and the flash energy should not exceed 40 J/cm2 and 47 J/cm2 for Si0.63C0.37 and Si0.77C0.23 samples, respectively. Under these conditions, FLA succeeds in producing Si NC of a given size in less crystalline SiC than RTA does. This result is discussed in terms of nucleation and crystal growth using classical crystallization theory. For FLA and RTA samples, an opposite relationship between NC size and Si content was observed and attributed either to the dependence of H effusion on Si content or to the optical absorption properties of the materials, which also depend on the Si content.

Process for manufacture of thick film hydrogen sensors

DOEpatents

Perdieu, Louisa H.

2000-09-09

A thick film process for producing hydrogen sensors capable of sensing down to a one percent concentration of hydrogen in carrier gasses such as argon, nitrogen, and air. The sensor is also suitable to detect hydrogen gas while immersed in transformer oil. The sensor includes a palladium resistance network thick film printed on a substrate, a portion of which network is coated with a protective hydrogen barrier. The process utilizes a sequence of printing of the requisite materials on a non-conductive substrate with firing temperatures at each step which are less than or equal to the temperature at the previous step.

MEMS based highly sensitive dual FET gas sensor using graphene decorated Pd-Ag alloy nanoparticles for H2 detection.

PubMed

Sharma, Bharat; Kim, Jung-Sik

2018-04-12

A low power, dual-gate field-effect transistor (FET) hydrogen gas sensor with graphene decorated Pd-Ag for hydrogen sensing applications was developed. The FET hydrogen sensor was integrated with a graphene-Pd-Ag-gate FET (GPA-FET) as hydrogen sensor coupled with Pt-gate FET as a reference sensor on a single sensor platform. The sensing gate electrode was modified with graphene by an e-spray technique followed by Pd-Ag DC/MF sputtering. Morphological and structural properties were studied by FESEM and Raman spectroscopy. FEM simulations were performed to confirm the uniform temperature control at the sensing gate electrode. The GPA-FET showed a high sensing response to hydrogen gas at the temperature of 25~254.5 °C. The as-proposed FET H 2 sensor showed the fast response time and recovery time of 16 s, 14 s, respectively at the operating temperature of 245 °C. The variation in drain current was positively related with increased working temperature and hydrogen concentration. The proposed dual-gate FET gas sensor in this study has potential applications in various fields, such as electronic noses and automobiles, owing to its low-power consumption, easy integration, good thermal stability and enhanced hydrogen sensing properties.

Wireless Hydrogen Smart Sensor Based on Pt/Graphene-Immobilized Radio-Frequency Identification Tag.

PubMed

Lee, Jun Seop; Oh, Jungkyun; Jun, Jaemoon; Jang, Jyongsik

2015-08-25

Hydrogen, a clean-burning fuel, is of key importance to various industrial applications, including fuel cells and the aerospace and automotive industries. However, hydrogen gas is odorless, colorless, and highly flammable; thus, appropriate safety protocol implementation and monitoring are essential. Highly sensitive hydrogen-gas leak detection and surveillance systems are needed; additionally, the ability to monitor large areas (e.g., cities) via wireless networks is becoming increasingly important. In this report, we introduce a radio frequency identification (RFID)-based wireless smart-sensor system, composed of a Pt-decorated reduced graphene oxide (Pt_rGO)-immobilized RFID sensor tag and an RFID-reader antenna-connected network analyzer to detect hydrogen gas. The Pt_rGOs, produced using a simple chemical reduction process, were immobilized on an antenna pattern in the sensor tag through spin coating. The resulting Pt_rGO-based RFID sensor tag exhibited a high sensitivity to hydrogen gas at unprecedentedly low concentrations (1 ppm), with wireless communication between the sensor tag and RFID-reader antenna. The wireless sensor tag demonstrated flexibility and a long lifetime due to the strong immobilization of Pt_rGOs on the substrate and battery-independent operation during hydrogen sensing, respectively.

Smart Sensor Systems for Aerospace Applications: From Sensor Development to Application Testing

NASA Technical Reports Server (NTRS)

Hunter, G. W.; Xu, J. C.; Dungan, L. K.; Ward, B. J.; Rowe, S.; Williams, J.; Makel, D. B.; Liu, C. C.; Chang, C. W.

2008-01-01

The application of Smart Sensor Systems for aerospace applications is a multidisciplinary process consisting of sensor element development, element integration into Smart Sensor hardware, and testing of the resulting sensor systems in application environments. This paper provides a cross-section of these activities for multiple aerospace applications illustrating the technology challenges involved. The development and application testing topics discussed are: 1) The broadening of sensitivity and operational range of silicon carbide (SiC) Schottky gas sensor elements; 2) Integration of fire detection sensor technology into a "Lick and Stick" Smart Sensor hardware platform for Crew Exploration Vehicle applications; 3) Extended testing for zirconia based oxygen sensors in the basic "Lick and Stick" platform for environmental monitoring applications. It is concluded that that both core sensor platform technology and a basic hardware platform can enhance the viability of implementing smart sensor systems in aerospace applications.

Thin-film fiber optic hydrogen and temperature sensor system

DOEpatents

Nave, Stanley E.

1998-01-01

The invention discloses a sensor probe device for monitoring of hydrogen gas concentrations and temperatures by the same sensor probe. The sensor probe is constructed using thin-film deposition methods for the placement of a multitude of layers of materials sensitive to hydrogen concentrations and temperature on the end of a light transparent lens located within the sensor probe. The end of the lens within the sensor probe contains a lens containing a layer of hydrogen permeable material which excludes other reactive gases, a layer of reflective metal material that forms a metal hydride upon absorbing hydrogen, and a layer of semi-conducting solid that is transparent above a temperature dependent minimum wavelength for temperature detection. The three layers of materials are located at the distal end of the lens located within the sensor probe. The lens focuses light generated by broad-band light generator and connected by fiber-optics to the sensor probe, onto a reflective metal material layer, which passes through the semi-conducting solid layer, onto two optical fibers located at the base of the sensor probe. The reflected light is transmitted over fiberoptic cables to a spectrometer and system controller. The absence of electrical signals and electrical wires in the sensor probe provides for an elimination of the potential for spark sources when monitoring in hydrogen rich environments, and provides a sensor free from electrical interferences.

Thin-film fiber optic hydrogen and temperature sensor system

DOEpatents

Nave, S.E.

1998-07-21

The invention discloses a sensor probe device for monitoring of hydrogen gas concentrations and temperatures by the same sensor probe. The sensor probe is constructed using thin-film deposition methods for the placement of a multitude of layers of materials sensitive to hydrogen concentrations and temperature on the end of a light transparent lens located within the sensor probe. The end of the lens within the sensor probe contains a lens containing a layer of hydrogen permeable material which excludes other reactive gases, a layer of reflective metal material that forms a metal hydride upon absorbing hydrogen, and a layer of semi-conducting solid that is transparent above a temperature dependent minimum wavelength for temperature detection. The three layers of materials are located at the distal end of the lens located within the sensor probe. The lens focuses light generated by broad-band light generator and connected by fiber-optics to the sensor probe, onto a reflective metal material layer, which passes through the semi-conducting solid layer, onto two optical fibers located at the base of the sensor probe. The reflected light is transmitted over fiber optic cables to a spectrometer and system controller. The absence of electrical signals and electrical wires in the sensor probe provides for an elimination of the potential for spark sources when monitoring in hydrogen rich environments, and provides a sensor free from electrical interferences. 3 figs.

Immobilization of functional oxide nanoparticles on silicon surfaces via Si-C bonded polymer brushes.

PubMed

Xu, F J; Wuang, S C; Zong, B Y; Kang, E T; Neoh, K G

2006-05-01

A method for immobilizing and mediating the spatial distribution of functional oxide (such as SiO2 and Fe3O4) nanoparticles (NPs) on (100)-oriented single crystal silicon surface, via Si-C bonded poly(3-(trimethoxysilyl)propyl methacrylate) (P(TMSPM)) brushes from surface-initiated atom transfer radical polymerization (ATRP) of (3-(trimethoxysilyl)propyl methacrylate) (TMSPM), was described. The ATRP initiator was covalently immobilized via UV-induced hydrosilylation of 4-vinylbenzyl chloride (VBC) with the hydrogen-terminated Si(100) surface (Si-H surface). The surface-immobilized Fe3O4 NPs retained their superparamagnetic characteristics and their magnetization intensity could be mediated by adjusting the thickness of the P(TMSPM) brushes.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Benson, D.K.; Tracy, C.E.

The real and perceived risks of hydrogen fuel use, particularly in passenger vehicles, will require extensive safety precautions including hydrogen leak detection. Conventional hydrogen gas sensors require electrical wiring and may be too expensive for deployment in multiple locations within a vehicle. In this recently initiated project, we are attempting to develop a reversible, thin-film, chemochromic sensor that can be applied to the end of a polymer optical fiber. The presence of hydrogen gas causes the film to become darker. A light beam transmitted from a central instrument in the vehicle along the sensor fibers will be reflected from themore » ends of the fiber back to individual light detectors. A decrease in the reflected light signal will indicate the presence and concentration of hydrogen in the vicinity of the fiber sensor. The typical thin film sensor consists of a layer of transparent, amorphous tungsten oxide covered by a very thin reflective layer of palladium. When the sensor is exposed to hydrogen, a portion of the hydrogen is dissociated, diffuses through the palladium and reacts with the tungsten oxide to form a blue insertion compound, H{sub X}WO{sub 3}- When the hydrogen gas is no longer present, the hydrogen will diffuse out of the H{sub X}WO{sub 3} and oxidize at the palladium/air interface, restoring the tungsten oxide film and the light signal to normal. The principle of this detection scheme has already been demonstrated by scientists in Japan. However, the design of the sensor has not been optimized for speed of response nor tested for its hydrogen selectivity in the presence of hydrocarbon gases. The challenge of this project is to modify the basic sensor design to achieve the required rapid response and assure sufficient selectivity to avoid false readings.« less

Hydrogen Sensors Boost Hybrids; Today's Models Losing Gas?

NASA Technical Reports Server (NTRS)

2005-01-01

Advanced chemical sensors are used in aeronautic and space applications to provide safety monitoring, emission monitoring, and fire detection. In order to fully do their jobs, these sensors must be able to operate in a range of environments. NASA has developed sensor technologies addressing these needs with the intent of improving safety, optimizing combustion efficiencies, and controlling emissions. On the ground, the chemical sensors were developed by NASA engineers to detect potential hydrogen leaks during Space Shuttle launch operations. The Space Shuttle uses a combination of hydrogen and oxygen as fuel for its main engines. Liquid hydrogen is pumped to the external tank from a storage tank located several hundred feet away. Any hydrogen leak could potentially result in a hydrogen fire, which is invisible to the naked eye. It is important to detect the presence of a hydrogen fire in order to prevent a major accident. In the air, the same hydrogen-leak dangers are present. Stress and temperature changes can cause tiny cracks or holes to form in the tubes that line the Space Shuttle s main engine nozzle. Such defects could allow the hydrogen that is pumped through the nozzle during firing to escape. Responding to the challenges associated with pinpointing hydrogen leaks, NASA endeavored to improve propellant leak-detection capabilities during assembly, pre-launch operations, and flight. The objective was to reduce the operational cost of assembling and maintaining hydrogen delivery systems with automated detection systems. In particular, efforts have been focused on developing an automated hydrogen leak-detection system using multiple, networked hydrogen sensors that are operable in harsh conditions.

Observation of the retarded transportation of a photogenerated hole on epitaxial graphene.

PubMed

Wang, Shujie; Yuan, Xizhi; Bi, Xiaofeng; Wang, Xiaomei; Huang, Qingsong

2015-10-07

Graphene is usually adopted as an assistant additive for catalysts in photocatalytic processes, because of its ability to accelerate the separation of photogenerated charge carriers. To elucidate the mechanism, hydrogen peroxide is adopted to convert the O2(-)˙ active species into OH˙ for degradation of an organic dye. If the pH value is less than 7, the concentration of the OH˙ species can be reduced more quickly with the addition of graphene than without, because negatively charged electrons can be transported quickly on graphene. If the pH value is larger than 7, the concentration of OH˙ can be promoted by the catalyst SiC with photogenerated h(+) release and reaction with OH(-), however the concentration is reduced if the SiC catalyst is covered by a graphene sheet, as it retards h(+) release from the SiC substrate. Our findings have provided a certification for the role of graphene in photo-catalytic processes.

Advances in silicon carbide Chemical Vapor Deposition (CVD) for semiconductor device fabrication

NASA Technical Reports Server (NTRS)

Powell, J. Anthony; Petit, Jeremy B.; Matus, Lawrence G.

1991-01-01

Improved SiC chemical vapor deposition films of both 3C and 6H polytypes were grown on vicinal (0001) 6H-SiC wafers cut from single-crystal boules. These films were produced from silane and propane in hydrogen at one atmosphere at a temperature of 1725 K. Among the more important factors which affected the structure and morphology of the grown films were the tilt angle of the substrate, the polarity of the growth surface, and the pregrowth surface treatment of the substrate. With proper pregrowth surface treatment, 6H films were grown on 6H substrates with tilt angles as small as 0.1 degrees. In addition, 3C could be induced to grow within selected regions on a 6H substrate. The polarity of the substrate was a large factor in the incorporation of dopants during epitaxial growth. A new growth model is discussed which explains the control of SiC polytype in epitaxial growth on vicinal (0001) SiC substrates.

Transfer of Graphene Layers Grown on SiC Wafers to Other Substrates and Their Integration into Field Effect Transistors

NASA Astrophysics Data System (ADS)

Unarunotai, Sakulsuk; Murata, Yuya; Chialvo, Cesar; Kim, Hoon-Sik; MacLaren, Scott; Mason, Nadya; Petrov, Ivan; Rogers, John

2010-03-01

An approach to produce graphene films by epitaxial growth on silicon carbide substrate is promising, but its current implementation requires the use of SiC as the device substrate. We present a simple method for transferring epitaxial sheets of graphene on SiC to other substrates. The graphene was grown on the (0001) face of 6H-SiC by thermal annealing in a hydrogen atmosphere. Transfer was accomplished using a peeling process with a bilayer film of Gold/polyimide, to yield graphene with square millimeters of coverage on the target substrate. Back gated field-effect transistors fabricated on oxidized silicon substrates with Cr/Au as source-drain electrodes exhibited ambipolar characteristics with hole mobilities of ˜100 cm^2/V-s, and negligible influence of resistance at the contacts. This work was supported by the U.S. DOE, under Award No. DE-FG02-07ER46471, through the Frederick Seitz Materials Research Laboratory at the University of Illinois at Urbana-Champaign.

Concept Demonstration of Dopant Selective Reactive Etching (DSRIE) in Silicon Carbide

NASA Technical Reports Server (NTRS)

Okojie, Robert S.

2015-01-01

Accurate quantification of combustor pressure dynamics for the primary purpose of experimental validation of computational fluid dynamics (CFD) codes requires the use of robust, reliable and sensitive pressure sensors that can resolve sub--pound-per-square-inch pressure levels in high temperature environments (i.e., combustor). The state of the art microfabricated piezoresistive silicon carbide (SiC) pressure sensors that we have developed are capable of operating reliably at 600 degrees Centigrade. This technology was used in support of the ARMD ISRP-ERA (NASA's Aeronautics Research Mission Directorate, Integrated System Research Project - Environmentally Responsible Aviation) program to quantify combustor thermoacoustic instabilities. The results showed that while the SiC pressure sensors survived the high temperature and measured instabilities, the diaphragm (force collector) was not thin enough to be sensitive in resolving sub-pound-per-square-inch pressures; 30 meters is the thinnest diaphragm achievable with conventional reactive ion etching (RIE) processes. Therefore, this precludes its use for sub-pound-per-square-inch pressure measurement with high fidelity. In order to effectively resolve sub-pound-per-square-inch pressures, a thinner more sensitive diaphragm (10 meters) is needed. To achieve this would require a new and innovative fabrication process technique.

Ceramic Strain Gages for Use at Temperatures up to 1500 Celsius

NASA Technical Reports Server (NTRS)

Gregory, Otto; Fralick, Gustave (Technical Monitor)

2003-01-01

Indium-tin-oxide (ITO) thin film strain gages were successfully demonstrated at temperatures beyond 1500 C. High temperature static strain tests revealed that the piezoresistive response and electrical stability of the ceramic sensors depended on the thickness of the ITO films comprising the active strain elements. When 2.5 microns-thick ITO films were employed as the active strain elements, the piezoresistive response became unstable at temperatures above 1225 C. In contrast to this, ceramic sensors prepared with 5 microns-thick ITO were stable beyond 1430 C and sensors prepared with 8 microns-thick ITO survived more than 20 hr of operation at 1481 C. Very thick (10 microns) ITo strain gages were extremely stable and responsive at 1528 C. ESCA depth profiles confirmed that an interfacial reaction between the ITO strain gage and alumina substrate was responsible for the high temperature electrical stability observed. Similar improvements in high temperature stability were achieved by doping the active ITO strain elements with aluminum. Several Sic-Sic CMC constant strain beams were instrumented with ITO strain gages and delivered to NASA for testing. Due to the extreme surface roughness of the CMC substrates, new lithography techniques and surface preparation methods were developed. These techniques relied heavily on a combination of Sic and A12O3 cement layers to provide the necessary surface finish for efficient pattern transfer. Micro-contact printing using soft lithography and PDMS stamps was also used to successfully transfer the thin film strain gage patterns to the resist coated CMC substrates. This latter approach has considerable potential for transferring the thin film strain gage patterns to the extremely rough surfaces associated with the CMC's.

High-performance flexible hydrogen sensor made of WS2 nanosheet-Pd nanoparticle composite film

NASA Astrophysics Data System (ADS)

Kuru, Cihan; Choi, Duyoung; Kargar, Alireza; Liu, Chin Hung; Yavuz, Serdar; Choi, Chulmin; Jin, Sungho; Bandaru, Prabhakar R.

2016-05-01

We report a flexible hydrogen sensor, composed of WS2 nanosheet-Pd nanoparticle composite film, fabricated on a flexible polyimide substrate. The sensor offers the advantages of light-weight, mechanical durability, room temperature operation, and high sensitivity. The WS2-Pd composite film exhibits sensitivity (R 1/R 2, the ratio of the initial resistance to final resistance of the sensor) of 7.8 to 50 000 ppm hydrogen. Moreover, the WS2-Pd composite film distinctly outperforms the graphene-Pd composite, whose sensitivity is only 1.14. Furthermore, the ease of fabrication holds great potential for scalable and low-cost manufacturing of hydrogen sensors.

Selective detection of vapor phase hydrogen peroxide with phthalocyanine chemiresistors.

PubMed

Bohrer, Forest I; Colesniuc, Corneliu N; Park, Jeongwon; Schuller, Ivan K; Kummel, Andrew C; Trogler, William C

2008-03-26

The use of hydrogen peroxide as a precursor to improvised explosives has made its detection a topic of critical importance. Chemiresistor arrays comprised of 50 nm thick films of metallophthalocyanines (MPcs) are redox selective vapor sensors of hydrogen peroxide. Hydrogen peroxide is shown to decrease currents in cobalt phthalocyanine sensors while it increases currents in nickel, copper, and metal-free phthalocyanine sensors; oxidation and reduction of hydrogen peroxide via catalysis at the phthalocyanine surface are consistent with the pattern of sensor responses. This represents the first example of MPc vapor sensors being oxidized and reduced by the same analyte by varying the metal center. Consequently, differential analysis by redox contrast with catalytic amplification using a small array of sensors may be used to uniquely identify peroxide vapors. Metallophthalocyanine chemiresistors represent an improvement over existing peroxide vapor detection technologies in durability and selectivity in a greatly decreased package size.

Statistical Analysis of SSMIS Sea Ice Concentration Threshold at the Arctic Sea Ice Edge during Summer Based on MODIS and Ship-Based Observational Data.

PubMed

Ji, Qing; Li, Fei; Pang, Xiaoping; Luo, Cong

2018-04-05

The threshold of sea ice concentration (SIC) is the basis for accurately calculating sea ice extent based on passive microwave (PM) remote sensing data. However, the PM SIC threshold at the sea ice edge used in previous studies and released sea ice products has not always been consistent. To explore the representable value of the PM SIC threshold corresponding on average to the position of the Arctic sea ice edge during summer in recent years, we extracted sea ice edge boundaries from the Moderate-resolution Imaging Spectroradiometer (MODIS) sea ice product (MOD29 with a spatial resolution of 1 km), MODIS images (250 m), and sea ice ship-based observation points (1 km) during the fifth (CHINARE-2012) and sixth (CHINARE-2014) Chinese National Arctic Research Expeditions, and made an overlay and comparison analysis with PM SIC derived from Special Sensor Microwave Imager Sounder (SSMIS, with a spatial resolution of 25 km) in the summer of 2012 and 2014. Results showed that the average SSMIS SIC threshold at the Arctic sea ice edge based on ice-water boundary lines extracted from MOD29 was 33%, which was higher than that of the commonly used 15% discriminant threshold. The average SIC threshold at sea ice edge based on ice-water boundary lines extracted by visual interpretation from four scenes of the MODIS image was 35% when compared to the average value of 36% from the MOD29 extracted ice edge pixels for the same days. The average SIC of 31% at the sea ice edge points extracted from ship-based observations also confirmed that choosing around 30% as the SIC threshold during summer is recommended for sea ice extent calculations based on SSMIS PM data. These results can provide a reference for further studying the variation of sea ice under the rapidly changing Arctic.

Growth of boron doped hydrogenated nanocrystalline cubic silicon carbide (3C-SiC) films by Hot Wire-CVD

DOE Office of Scientific and Technical Information (OSTI.GOV)

Pawbake, Amit; Tata Institute of Fundamental Research, Colaba, Mumbai 400 005; Mayabadi, Azam

Highlights: • Boron doped nc-3C-SiC films prepared by HW-CVD using SiH{sub 4}/CH{sub 4}/B{sub 2}H{sub 6}. • 3C-Si-C films have preferred orientation in (1 1 1) direction. • Introduction of boron into SiC matrix retard the crystallanity in the film structure. • Film large number of SiC nanocrystallites embedded in the a-Si matrix. • Band gap values, E{sub Tauc} and E{sub 04} (E{sub 04} > E{sub Tauc}) decreases with increase in B{sub 2}H{sub 6} flow rate. - Abstract: Boron doped nanocrystalline cubic silicon carbide (3C-SiC) films have been prepared by HW-CVD using silane (SiH{sub 4})/methane (CH{sub 4})/diborane (B{sub 2}H{sub 6}) gasmore » mixture. The influence of boron doping on structural, optical, morphological and electrical properties have been investigated. The formation of 3C-SiC films have been confirmed by low angle XRD, Raman spectroscopy, X-ray photoelectron spectroscopy (XPS), Fourier transform infra-red (FTIR) spectroscopy and high resolution-transmission electron microscopy (HR-TEM) analysis whereas effective boron doping in nc-3C-SiC have been confirmed by conductivity, charge carrier activation energy, and Hall measurements. Raman spectroscopy and HR-TEM analysis revealed that introduction of boron into the SiC matrix retards the crystallanity in the film structure. The field emission scanning electron microscopy (FE-SEM) and non contact atomic force microscopy (NC-AFM) results signify that 3C-SiC film contain well resolved, large number of silicon carbide (SiC) nanocrystallites embedded in the a-Si matrix having rms surface roughness ∼1.64 nm. Hydrogen content in doped films are found smaller than that of un-doped films. Optical band gap values, E{sub Tauc} and E{sub 04} decreases with increase in B{sub 2}H{sub 6} flow rate.« less

Sensors and devices containing ultra-small nanowire arrays

DOEpatents

Xiao, Zhili

2014-09-23

A network of nanowires may be used for a sensor. The nanowires are metallic, each nanowire has a thickness of at most 20 nm, and each nanowire has a width of at most 20 nm. The sensor may include nanowires comprising Pd, and the sensor may sense a change in hydrogen concentration from 0 to 100%. A device may include the hydrogen sensor, such as a vehicle, a fuel cell, a hydrogen storage tank, a facility for manufacturing steel, or a facility for refining petroleum products.

Sensors and devices containing ultra-small nanowire arrays

DOEpatents

Xiao, Zhili

2017-04-11

A network of nanowires may be used for a sensor. The nanowires are metallic, each nanowire has a thickness of at most 20 nm, and each nanowire has a width of at most 20 nm. The sensor may include nanowires comprising Pd, and the sensor may sense a change in hydrogen concentration from 0 to 100%. A device may include the hydrogen sensor, such as a vehicle, a fuel cell, a hydrogen storage tank, a facility for manufacturing steel, or a facility for refining petroleum products.

Surface and Interface Study of PdCr/SiC Schottky Diode Gas Sensor Annealed at 425 C

NASA Technical Reports Server (NTRS)

Chen, Liang-Yu; Hunter, Gary W.; Neudeck, Philip G.; Knight, Dak

1998-01-01

The surface and interface properties of Pd(sub 0.9)Cr(sub 0.1/SiC Schottky diode gas sensor both before and after annealing are investigated using Auger Electron Spectroscopy (AES), Scanning Electron Microscopy (SEM), and Energy Dispersive Spectroscopy (EDS). At room temperature the alloy reacted with SiC and formed Pd(sub x)Si only in a very narrow interfacial region. After annealing for 250 hours at 425 deg. C, the surface of the Schottky contact area has much less silicon and carbon contamination than that found on the surface of an annealed Pd/SiC structure. Pd(sub x)Si formed at a broadened interface after annealing, but a significant layer of alloy film is still free of silicon and carbon. The chromium concentration with respect to palladium is quite uniform down to the deep interface region. A stable catalytic surface and a clean layer of Pd(sub 0.9)Cr(sub 0.1) film are likely responsible for significantly improved device sensitivity.

Surface and Interface Properties of PdCr/SiC Schottky Diode Gas Sensor Annealed at 425 C

NASA Technical Reports Server (NTRS)

Chen, Liang-Yu; Hunter, Gary W.; Neudeck, Philip G.; Knight, Dak

1998-01-01

The surface and interface properties of Pd(0.9,)Cr(0.1)/SiC Schottky diode gas sensors both before and after annealing are investigated using Auger electron spectroscopy (AES), scanning electron microscopy (SEM), and energy dispersive spectroscopy (EDS). At room temperature the alloy reacted with SiC and formed Pd,Si only in a very narrow interfacial region. After annealing for 250 h ,It 425 C, the surface of the Schottky contact area his much less silicon and carbon contamination than that found on the surface of an annealed Pd/SiC structure. Palladium silicides (Pd(x)Si) formed at a broadened interface after annealing, but a significant layer of alloy film is still free of silicon and carbon. The chromium concentration with respect to palladium is quite uniform down to the deep interface region. A stable catalytic surface and a clean layer of Pd(0.9)Cr(0.1) film are likely responsible for significantly improved device sensitivity.

Surface and Interface Properties of PdCr/SiC Schottky Diode Gas Sensor Annealed at 425 C

NASA Technical Reports Server (NTRS)

Chen, Liang-Yu; Hunter, Gary W.; Neudeck, Philip G.; Knight, Dak

1998-01-01

The surface and interface properties of Pd(0.9)Cr(0.1)/SiC Schottky diode gas sensors both before and after annealing are investigated using Auger Electron Spectroscopy (AES), Scanning Electron Microscopy (SEM), and Energy Dispersive Spectroscopy (EDS). At room temperature the alloy reacted with SiC and formed Pd(x)Si only in a very narrow interfacial region. After annealing for 250 hours at 425 C, the surface of the Schottky contact area has much less silicon and carbon contamination than that found on the surface of an annealed Pd/SiC structure. Palladium silicides (Pd(x)Si) formed at a broadened interface after annealing, but a significant layer of alloy film is still free of silicon and carbon. The chromium concentration with respect to palladium is quite uniform down to the deep interface region. A stable catalytic surface and a clean layer of Pd(0.9)Cr(0.1) film are likely responsible for significantly improved device sensitivity.

D-region ion-neutral coupled chemistry (Sodankylä Ion Chemistry, SIC) within the Whole Atmosphere Community Climate Model (WACCM 4) - WACCM-SIC and WACCM-rSIC

NASA Astrophysics Data System (ADS)

Kovács, Tamás; Plane, John M. C.; Feng, Wuhu; Nagy, Tibor; Chipperfield, Martyn P.; Verronen, Pekka T.; Andersson, Monika E.; Newnham, David A.; Clilverd, Mark A.; Marsh, Daniel R.

2016-09-01

This study presents a new ion-neutral chemical model coupled into the Whole Atmosphere Community Climate Model (WACCM). The ionospheric D-region (altitudes ˜ 50-90 km) chemistry is based on the Sodankylä Ion Chemistry (SIC) model, a one-dimensional model containing 307 ion-neutral and ion recombination, 16 photodissociation and 7 photoionization reactions of neutral species, positive and negative ions, and electrons. The SIC mechanism was reduced using the simulation error minimization connectivity method (SEM-CM) to produce a reaction scheme of 181 ion-molecule reactions of 181 ion-molecule reactions of 27 positive and 18 negative ions. This scheme describes the concentration profiles at altitudes between 20 km and 120 km of a set of major neutral species (HNO3, O3, H2O2, NO, NO2, HO2, OH, N2O5) and ions (O2+, O4+, NO+, NO+(H2O), O2+(H2O), H+(H2O), H+(H2O)2, H+(H2O)3, H+(H2O)4, O3-, NO2-, O-, O2, OH-, O2-(H2O), O2-(H2O)2, O4-, CO3-, CO3-(H2O), CO4-, HCO3-, NO2-, NO3-, NO3-(H2O), NO3-(H2O)2, NO3-(HNO3), NO3-(HNO3)2, Cl-, ClO-), which agree with the full SIC mechanism within a 5 % tolerance. Four 3-D model simulations were then performed, using the impact of the January 2005 solar proton event (SPE) on D-region HOx and NOx chemistry as a test case of four different model versions: the standard WACCM (no negative ions and a very limited set of positive ions); WACCM-SIC (standard WACCM with the full SIC chemistry of positive and negative ions); WACCM-D (standard WACCM with a heuristic reduction of the SIC chemistry, recently used to examine HNO3 formation following an SPE); and WACCM-rSIC (standard WACCM with a reduction of SIC chemistry using the SEM-CM method). The standard WACCM misses the HNO3 enhancement during the SPE, while the full and reduced model versions predict significant NOx, HOx and HNO3 enhancements in the mesosphere during solar proton events. The SEM-CM reduction also identifies the important ion-molecule reactions that affect the partitioning of odd nitrogen (NOx), odd hydrogen (HOx) and O3 in the stratosphere and mesosphere.

Energy Systems Sensor Laboratory | Energy Systems Integration Facility |

Science.gov Websites

NREL Sensor Laboratory Energy Systems Sensor Laboratory The Energy Systems Integration Facility's Energy Systems Sensor Laboratory is designed to support research, development, testing, and evaluation of advanced hydrogen sensor technologies to support the needs of the emerging hydrogen

High Hydrogen Content Graphene Hydride Compounds & High Cross-­ Section Cladding Coatings for Fast Neutron Detection

DOE Office of Scientific and Technical Information (OSTI.GOV)

Chandrashekhar, MVS

The objective is to develop and implement a superior low-cost, large area (potentially >32in), easily deployable, close proximity, harsh environment innovative neutron sensor needed for next generation fuel cycle monitoring. We will exploit recent breakthroughs at the PI’s lab on the electrochemistry of epitaxial graphene (EG) formed on commercial SiC wafers, a transformative nanomaterial system with superior radiation detection and durability properties to develop a new paradigm in detection for fast neutrons, a by-product of fission reactors. There are currently few effective detection/monitoring schemes, especially solid-state ones at present. This is essential for monitoring and control of future fuel cyclesmore » to make them more efficient and reliable. By exploiting these novel materials, as well as innovative hybrid SiC/EG/Cladding device architectures conceived by the team, will develop low-cost, high performance solutions to fast-neutron detection. Finally, we will also explore 3-terminal device implementations for neutron detectors with built-in electronic gain to further shrink these devices and improve their sensitivity.« less

Novel Approach for Positioning Sensor Lead Wires on SiC-Based Monolithic Ceramic and FRCMC Components/Subcomponents Having Flat and Curved Surfaces

NASA Technical Reports Server (NTRS)

Kiser, J. Douglas; Singh, Mrityunjay; Lei, Jin-Fen; Martin, Lisa C.

1999-01-01

A novel attachment approach for positioning sensor lead wires on silicon carbide-based monolithic ceramic and fiber reinforced ceramic matrix composite (FRCMC) components has been developed. This approach is based on an affordable, robust ceramic joining technology, named ARCJoinT, which was developed for the joining of silicon carbide-based ceramic and fiber reinforced composites. The ARCJoinT technique has previously been shown to produce joints with tailorable thickness and good high temperature strength. In this study, silicon carbide-based ceramic and FRCMC attachments of different shapes and sizes were joined onto silicon carbide fiber reinforced silicon carbide matrix (SiC/ SiC) composites having flat and curved surfaces. Based on results obtained in previous joining studies. the joined attachments should maintain their mechanical strength and integrity at temperatures up to 1350 C in air. Therefore they can be used to position and secure sensor lead wires on SiC/SiC components that are being tested in programs that are focused on developing FRCMCs for a number of demanding high temperature applications in aerospace and ground-based systems. This approach, which is suitable for installing attachments on large and complex shaped monolithic ceramic and composite components, should enhance the durability of minimally intrusive high temperature sensor systems. The technology could also be used to reinstall attachments on ceramic components that were damaged in service.

Hydrogen sensor

DOEpatents

Duan, Yixiang; Jia, Quanxi; Cao, Wenqing

2010-11-23

A hydrogen sensor for detecting/quantitating hydrogen and hydrogen isotopes includes a sampling line and a microplasma generator that excites hydrogen from a gas sample and produces light emission from excited hydrogen. A power supply provides power to the microplasma generator, and a spectrometer generates an emission spectrum from the light emission. A programmable computer is adapted for determining whether or not the gas sample includes hydrogen, and for quantitating the amount of hydrogen and/or hydrogen isotopes are present in the gas sample.

Quantification Of 4H- To 3C-Polymorphism In Silicon Carbide (SiC) Epilayers And An Investigation Of Recombination-Enhanced Dislocation Motion In SiC By Optical Emission Microscopy (Oem) Techniques

NASA Technical Reports Server (NTRS)

Speer, Kevin M.

2004-01-01

Environments that impose operational constraints on conventional silicon-(Si) based semiconductor devices frequently appear in military- and space-grade applications. These constraints include high temperature, high power, and high radiation environments. Silicon carbide (SiC), an alternative type of semiconductor material, has received abundant research attention in the past few years, owing to its radiation-hardened properties as well as its capability to withstand high temperatures and power levels. However, the growth and manufacture of SiC devices is still comparatively immature, and there are severe limitations in present crystal growth and device fabrication processes. Among these limitations is a variety of crystal imperfections known as defects. These imperfections can be point defects (e.g., vacancies and interstitials), line defects (e.g., edge and screw dislocations), or planar defects (e.g., stacking faults and double-positioning boundaries). All of these defects have been experimentally shown to be detrimental to the performance of electron devices made from SiC. As such, it is imperative that these defects are significantly reduced in order for SiC devices to become a viable entity in the electronics world. The NASA Glenn High Temperature Integrated Electronics & Sensors Team (HTIES) is working to identify and eliminate these defects in SiC by implementing improved epitaxial crystal growth procedures. HTIES takes two-inch SiC wafers and etches patterns, producing thousands of mesas into each wafer. Crystal growth is then carried out on top of these mesas in an effort to produce films of improved quality-resulting in electron devices that demonstrate superior performance-as well as fabrication processes that are cost-effective, reliable, and reproducible. In this work, further steps are taken to automate HTIES' SiC wafer inspection system. National Instruments LabVIEW image processing and pattern recognition routines are developed that are capable of quantifying and mapping defects on both the substrate and mesa surfaces, and of quantifying polymorphic changes in the grown materials. In addition, an optical emission microscopy (OEM) system is developed that will facilitate comprehensive study of recombination-enhanced dislocation motion (REDM).

SiC-Based Schottky Diode Gas Sensors

NASA Technical Reports Server (NTRS)

Hunter, Gary W.; Neudeck, Philip G.; Chen, Liang-Yu; Knight, Dak; Liu, Chung-Chiun; Wu, Quing-Hai

1997-01-01

Silicon carbide based Schottky diode gas sensors are being developed for high temperature applications such as emission measurements. Two different types of gas sensitive diodes will be discussed in this paper. By varying the structure of the diode, one can affect the diode stability as well as the diode sensitivity to various gases. It is concluded that the ability of SiC to operate as a high temperature semiconductor significantly enhances the versatility of the Schottky diode gas sensing structure and will potentially allow the fabrication of a SiC-based gas sensor arrays for versatile high temperature gas sensing applications.

Improved Method of Manufacturing SiC Devices

NASA Technical Reports Server (NTRS)

Okojie, Robert S.

2005-01-01

The phrase, "common-layered architecture for semiconductor silicon carbide" ("CLASSiC") denotes a method of batch fabrication of microelectromechanical and semiconductor devices from bulk silicon carbide. CLASSiC is the latest in a series of related methods developed in recent years in continuing efforts to standardize SiC-fabrication processes. CLASSiC encompasses both institutional and technological innovations that can be exploited separately or in combination to make the manufacture of SiC devices more economical. Examples of such devices are piezoresistive pressure sensors, strain gauges, vibration sensors, and turbulence-intensity sensors for use in harsh environments (e.g., high-temperature, high-pressure, corrosive atmospheres). The institutional innovation is to manufacture devices for different customers (individuals, companies, and/or other entities) simultaneously in the same batch. This innovation is based on utilization of the capability for fabrication, on the same substrate, of multiple SiC devices having different functionalities (see figure). Multiple customers can purchase shares of the area on the same substrate, each customer s share being apportioned according to the customer s production-volume requirement. This makes it possible for multiple customers to share costs in a common foundry, so that the capital equipment cost per customer in the inherently low-volume SiC-product market can be reduced significantly. One of the technological innovations is a five-mask process that is based on an established set of process design rules. The rules provide for standardization of the fabrication process, yet are flexible enough to enable multiple customers to lay out masks for their portions of the SiC substrate to provide for simultaneous batch fabrication of their various devices. In a related prior method, denoted multi-user fabrication in silicon carbide (MUSiC), the fabrication process is based largely on surface micromachining of poly SiC. However, in MUSiC one cannot exploit the superior sensing, thermomechanical, and electrical properties of single-crystal 6H-SiC or 4H-SiC. As a complement to MUSiC, the CLASSiC five-mask process can be utilized to fabricate multiple devices in bulk single-crystal SiC of any polytype. The five-mask process makes fabrication less complex because it eliminates the need for large-area deposition and removal of sacrificial material. Other innovations in CLASSiC pertain to selective etching of indium tin oxide and aluminum in connection with multilayer metallization. One major characteristic of bulk micromachined microelectromechanical devices is the presence of three-dimensional (3D) structures. Any 3D recesses that already exist at a given step in a fabrication process usually make it difficult to apply a planar coat of photoresist for metallization and other subsequent process steps. To overcome this difficulty, the CLASSiC process includes a reversal of part of the conventional flow: Metallization is performed before the recesses are etched.

High Temperature Wireless Communication And Electronics For Harsh Environment Applications

NASA Technical Reports Server (NTRS)

Hunter, G. W.; Neudeck, P. G.; Beheim, G. M.; Ponchak, G. E.; Chen, L.-Y

2007-01-01

In order for future aerospace propulsion systems to meet the increasing requirements for decreased maintenance, improved capability, and increased safety, the inclusion of intelligence into the propulsion system design and operation becomes necessary. These propulsion systems will have to incorporate technology that will monitor propulsion component conditions, analyze the incoming data, and modify operating parameters to optimize propulsion system operations. This implies the development of sensors, actuators, and electronics, with associated packaging, that will be able to operate under the harsh environments present in an engine. However, given the harsh environments inherent in propulsion systems, the development of engine-compatible electronics and sensors is not straightforward. The ability of a sensor system to operate in a given environment often depends as much on the technologies supporting the sensor element as the element itself. If the supporting technology cannot handle the application, then no matter how good the sensor is itself, the sensor system will fail. An example is high temperature environments where supporting technologies are often not capable of operation in engine conditions. Further, for every sensor going into an engine environment, i.e., for every new piece of hardware that improves the in-situ intelligence of the components, communication wires almost always must follow. The communication wires may be within or between parts, or from the engine to the controller. As more hardware is added, more wires, weight, complexity, and potential for unreliability is also introduced. Thus, wireless communication combined with in-situ processing of data would significantly improve the ability to include sensors into high temperature systems and thus lead toward more intelligent engine systems. NASA Glenn Research Center (GRC) is presently leading the development of electronics, communication systems, and sensors capable of prolonged stable operation in harsh 500C environments. This has included world record operation of SiC-based transistor technology (including packaging) that has demonstrated continuous electrical operation at 500C for over 2000 hours. Based on SiC electronics, development of high temperature wireless communication has been on-going. This work has concentrated on maturing the SiC electronic devices for communication purposes as well as the passive components such as resistors and capacitors needed to enable a high temperature wireless system. The objective is to eliminate wires associated with high temperature sensors which add weight to a vehicle and can be a cause of sensor unreliability. This paper discusses the development of SiC based electronics and wireless communications technology for harsh environment applications such as propulsion health management systems and in Venus missions. A brief overview of the future directions in sensor technology is given including maturing of near-room temperature "Lick and Stick" leak sensor technology for possible implementation in the Crew Launch Vehicle program. Then an overview of high temperature electronics and the development of high temperature communication systems is presented. The maturity of related technologies such as sensor and packaging will also be discussed. It is concluded that a significant component of efforts to improve the intelligence of harsh environment operating systems is the development and implementation of high temperature wireless technology

Facile one-step electrochemical deposition of copper nanoparticles and reduced graphene oxide as nonenzymatic hydrogen peroxide sensor

NASA Astrophysics Data System (ADS)

Moozarm Nia, Pooria; Woi, Pei Meng; Alias, Yatimah

2017-08-01

For several decades, hydrogen peroxide has exhibited to be an extremely significant analyte as an intermediate in several biological devices as well as in many industrial systems. A straightforward and novel one-step technique was employed to develop a sensitive non-enzymatic hydrogen peroxide (H2O2) sensor by simultaneous electrodeposition of copper nanoparticles (CuNPs) and reduced graphene oxide (rGO). The electroreduction performance of the CuNPs-rGO for hydrogen peroxide detection was studied by cyclic voltammetry (CV) and chronoamperometry (AMP) methods The CuNPs-rGO showed a synergistic effect of reduced graphene oxide and copper nanoparticles towards the electroreduction of hydrogen peroxide, indicating high reduction current. At detection potential of -0.2 V, the CuNPs-rGO sensor demonstrated a wide linear range up to 18 mM with a detection limit of 0.601 mM (S/N = 3). Furthermore, with addition of hydrogen peroxide, the sensor responded very quickly (<3 s). The CuNPs-rGO presents high selectivity, sensitivity, stability and fast amperometric sensing towards hydrogen peroxide which makes it favorable for the development of non-enzymatic hydrogen peroxide sensor.

Freeze drying-assisted synthesis of Pt@reduced graphene oxide nanocomposites as excellent hydrogen sensor

NASA Astrophysics Data System (ADS)

Lu, Xiaojing; Song, Xinjie; Gu, Cuiping; Ren, Haibo; Sun, Yufeng; Huang, Jiarui

2018-05-01

Quick and efficient detection of low concentrations of hydrogen remains a challenge because of the stability of hydrogen. A sensor based on reduced oxide graphene functionalized with Pt nanoparticles is successfully fabricated using a freeze-drying method followed by heat treatment. The structure and morphology of the Pt@rGO nanocomposites are well analyzed by X-ray diffraction, field emission scanning electron microscopy, transmission electron microscopy, Raman spectroscopy, and X-ray photoelectron spectroscopy. The as-prepared Pt@rGO nanocomposites show excellent hydrogen gas sensing properties at a low working temperature of 50 °C. The sensitivity toward 0.5% hydrogen is 8%. The response and recovery times of the sensor exposed to 0.5% hydrogen are 63 and 104 s, respectively. The gas-sensing mechanism of Pt@rGO sensor is also discussed.

Hydrogen Gas Sensors Based on Semiconductor Oxide Nanostructures

PubMed Central

Gu, Haoshuang; Wang, Zhao; Hu, Yongming

2012-01-01

Recently, the hydrogen gas sensing properties of semiconductor oxide (SMO) nanostructures have been widely investigated. In this article, we provide a comprehensive review of the research progress in the last five years concerning hydrogen gas sensors based on SMO thin film and one-dimensional (1D) nanostructures. The hydrogen sensing mechanism of SMO nanostructures and some critical issues are discussed. Doping, noble metal-decoration, heterojunctions and size reduction have been investigated and proved to be effective methods for improving the sensing performance of SMO thin films and 1D nanostructures. The effect on the hydrogen response of SMO thin films and 1D nanostructures of grain boundary and crystal orientation, as well as the sensor architecture, including electrode size and nanojunctions have also been studied. Finally, we also discuss some challenges for the future applications of SMO nanostructured hydrogen sensors. PMID:22778599

Micro/nano electro mechanical systems for practical applications

NASA Astrophysics Data System (ADS)

Esashi, Masayoshi

2009-09-01

Silicon MEMS as electrostatically levitated rotational gyroscope, 2D optical scanner and wafer level packaged devices as integrated capacitive pressure sensor and MEMS switch are described. MEMS which use non-silicon materials as diamond, PZT, conductive polymer, CNT (carbon nano tube), LTCC with electrical feedthrough, SiC (silicon carbide) and LiNbO3 for multi-probe data storage, multi-column electron beam lithography system, probe card for wafer-level burn-in test, mould for glass press moulding and SAW wireless passive sensor respectively are also described.

Predictive sensor method and apparatus

NASA Technical Reports Server (NTRS)

Cambridge, Vivien J.; Koger, Thomas L.

1993-01-01

A microprocessor and electronics package employing predictive methodology was developed to accelerate the response time of slowly responding hydrogen sensors. The system developed improved sensor response time from approximately 90 seconds to 8.5 seconds. The microprocessor works in real-time providing accurate hydrogen concentration corrected for fluctuations in sensor output resulting from changes in atmospheric pressure and temperature. Following the successful development of the hydrogen sensor system, the system and predictive methodology was adapted to a commercial medical thermometer probe. Results of the experiment indicate that, with some customization of hardware and software, response time improvements are possible for medical thermometers as well as other slowly responding sensors.

Development of an Inexpensive RGB Color Sensor for the Detection of Hydrogen Cyanide Gas.

PubMed

Greenawald, Lee A; Boss, Gerry R; Snyder, Jay L; Reeder, Aaron; Bell, Suzanne

2017-10-27

An inexpensive red, green, blue (RGB) color sensor was developed for detecting low ppm concentrations of hydrogen cyanide gas. A piece of glass fiber filter paper containing monocyanocobinamide [CN(H 2 O)Cbi] was placed directly above the RGB color sensor and an on chip LED. Light reflected from the paper was monitored for RGB color change upon exposure to hydrogen cyanide at concentrations of 1.0-10.0 ppm as a function of 25%, 50%, and 85% relative humidity. A rapid color change occurred within 10 s of exposure to 5.0 ppm hydrogen cyanide gas (near the NIOSH recommended exposure limit). A more rapid color change occurred at higher humidity, suggesting a more effective reaction between hydrogen cyanide and CN(H 2 O)Cbi. The sensor could provide the first real time respirator end-of-service-life alert for hydrogen cyanide gas.

Model for the formation of silicon carbide from the pyrolysis of dichlorodimethylsilane in hydrogen. I - Silicon formation from chlorosilanes. II - Silicon carbide formation from silicon and methane

NASA Technical Reports Server (NTRS)

Cagliostro, Domenick E.; Riccitiello, Salvatore R.

1993-01-01

In the first part of this work, a model is developed for the deposition of silicon from the reduction of silicon tetrachloride with hydrogen in a tubular reactor at 700-1100 C, at atmospheric pressure. The model is based on gas chromatography of the volatile products of the reaction, followed by gravimetric analysis of total Si deposition on the tube. In the second part of this work, a model is developed for the case of SiC deposition from the pyrolysis of dichlorodimethylsilane in hydrogen under the same reactor conditions. The rate constants derived from a nonlinear regression analysis are reported.

Safe Detection System for Hydrogen Leaks

DOE Office of Scientific and Technical Information (OSTI.GOV)

Lieberman, Robert A.; Beshay, Manal

2012-02-29

Hydrogen is an "environmentally friendly" fuel for future transportation and other applications, since it produces only pure ("distilled") water when it is consumed. Thus, hydrogen-powered vehicles are beginning to proliferate, with the total number of such vehicles expected to rise to nearly 100,000 within the next few years. However, hydrogen is also an odorless, colorless, highly flammable gas. Because of this, there is an important need for hydrogen safety monitors that can warn of hazardous conditions in vehicles, storage facilities, and hydrogen production plants. To address this need, IOS has developed a unique intrinsically safe optical hydrogen sensing technology, andmore » has embodied it in detector systems specifically developed for safety applications. The challenge of using light to detect a colorless substance was met by creating chemically-sensitized optical materials whose color changes in the presence of hydrogen. This reversible reaction provides a sensitive, reliable, way of detecting hydrogen and measuring its concentration using light from low-cost LEDs. Hydrogen sensors based on this material were developed in three completely different optical formats: point sensors ("optrodes"), integrated optic sensors ("optical chips"), and optical fibers ("distributed sensors") whose entire length responds to hydrogen. After comparing performance, cost, time-to-market, and relative market need for these sensor types, the project focused on designing a compact optrode-based single-point hydrogen safety monitor. The project ended with the fabrication of fifteen prototype units, and the selection of two specific markets: fuel cell enclosure monitoring, and refueling/storage safety. Final testing and development of control software for these markets await future support.« less

(abstract) Transmission Electron Microscopy of Al(sub x)Ga(sub 1-x)N/SiC Multilayer Structures Grown on Sapphire Substrates

NASA Technical Reports Server (NTRS)

Pike, W. T.; George, T.; Khan, M. A.; Kuznia, J. N.

1994-01-01

The potential of wide-band-gap III-V nitrides as ultraviolet sensors and light emitters has prompted an increasing amount of work recently, including the fabrication of the first UV sensors from as-deposited single crystal GaN. We have used high resolution transmission electron microscopy (TEM) to study the microstructure of two novel developments of wide-band-gap III-V nitrides: the growth of ultra-short period GaN/AlN superlattices; and the incorporation of SiC layers into Al(sub x)Ga(sub 1-x)N structures. By varying the relative periods in a GaN/AlN superlattice, the band gap of the composite can be tailored to lie between the elemental values of 365 nm for GaN and 200 nm for AlN. The group IV semiconductor, SiC, has a wide band-gap and has a close lattice match (less than 3 %) to Al(sub x)Ga(sub 1-x)N for growth on the basal plane. Demonstration of epitaxial growth for Al(sub x)Ga(sub 1-x)N/SiC multilayers would introduce a wide band-gap analog to the already existing family of III-V and Si(sub 1-x)Ge(sub x) heteroepitaxial growth systems. Although good quality growth of GaN on SiC substrates has been demonstrated, Al(sub x)Ga(sub 1-x)N/SiC multilayer structures have never been grown and the interfacial structure is unknown.

Atmospheric forcing of sea ice anomalies in the Ross Sea Polynya region

NASA Astrophysics Data System (ADS)

Dale, Ethan; McDonald, Adrian; Rack, Wolfgang

2016-04-01

Despite warming trends in global temperatures, sea ice extent in the southern hemisphere has shown an increasing trend over recent decades. Wind-driven sea ice export from coastal polynyas is an important source of sea ice production. Areas of major polynyas in the Ross Sea, the region with largest increase in sea ice extent, have been suggested to produce the vast amount of the sea ice in the region. We investigate the impacts of strong wind events on polynyas and the subsequent sea ice production. We utilize Bootstrap sea ice concentration (SIC) measurements derived from satellite based, Special Sensor Microwave Imager (SSM/I) brightness temperature images. These are compared with surface wind measurements made by automatic weather stations of the University of Wisconsin-Madison Antarctic Meteorology Program. Our analysis focusses on the winter period defined as 1st April to 1st November in this study. Wind data was used to classify each day into characteristic regimes based on the change of wind speed. For each regime, a composite of SIC anomaly was formed for the Ross Sea region. We found that persistent weak winds near the edge of the Ross Ice Shelf are generally associated with positive SIC anomalies in the Ross Sea polynya area (RSP). Conversely we found negative SIC anomalies in this area during persistent strong winds. By analyzing sea ice motion vectors derived from SSM/I brightness temperatures, we find significant sea ice motion anomalies throughout the Ross Sea during strong wind events. These anomalies persist for several days after the strong wing event. Strong, negative correlations are found between SIC within the RSP and wind speed indicating that strong winds cause significant advection of sea ice in the RSP. This rapid decrease in SIC is followed by a more gradual recovery in SIC. This increase occurs on a time scale greater than the average persistence of strong wind events and the resulting Sea ice motion anomalies, highlighting the production of new sea ice through thermodynamic processes.

MIS-based sensors with hydrogen selectivity

DOEpatents

Li,; Dongmei, [Boulder, CO; Medlin, J William [Boulder, CO; McDaniel, Anthony H [Livermore, CA; Bastasz, Robert J [Livermore, CA

2008-03-11

The invention provides hydrogen selective metal-insulator-semiconductor sensors which include a layer of hydrogen selective material. The hydrogen selective material can be polyimide layer having a thickness between 200 and 800 nm. Suitable polyimide materials include reaction products of benzophenone tetracarboxylic dianhydride 4,4-oxydianiline m-phenylene diamine and other structurally similar materials.

Fiber optic microsensor technology for detection of hydrogen in space applications

NASA Astrophysics Data System (ADS)

Kazemi, Alex A.

2008-04-01

Optical hydrogen sensors are intrinsically safe since they produce no arc or spark in an explosive environment caused by the leakage of hydrogen. Safety remains a top priority since leakage of hydrogen in air during production, storage, transfer and distribution creates an explosive atmosphere for concentrations between 4% (v/v) - the lower explosive limit (LEL) and 74.5% (v/v) - the upper explosive limit (UEL) at room temperature and pressure. Being a very small molecule, hydrogen is prone to leakage through seals and micro-cracks. Hydrogen detection in space application is very challenging; public acceptance of hydrogen fuel would require the integration of a reliable hydrogen safety sensor. For detecting leakage of cryogenic fluids in spaceport facilities, Launch vehicle industry and aerospace agencies are currently relying heavily on the bulky mass spectrometers, which fill one or more equipment racks, and weigh several hundred kilograms. This paper describes the successful development and test of a multi-point fiber optic hydrogen sensor system during the static firing of an Evolved Expandable Launch Vehicle at NASA's Stennis Space Center. The system consisted of microsensors (optrodes) using hydrogen gas sensitive indicator incorporated onto an optically transparent porous substrate. The modular optoelectronics and multiplexing network system was designed and assembled utilizing a multi-channel optoelectronic sensor readout unit that monitored the hydrogen and temperature response of the individual optrodes in real-time and communicated this information via a serial communication port to a remote laptop computer. The paper would discuss the sensor design and performance data under field deployment conditions.

Thin film hydrogen sensor

DOEpatents

Lauf, Robert J.; Hoffheins, Barbara S.; Fleming, Pamela H.

1994-01-01

A hydrogen sensor element comprises an essentially inert, electrically-insulating substrate having a thin-film metallization deposited thereon which forms at least two resistors on the substrate. The metallization comprises a layer of Pd or a Pd alloy for sensing hydrogen and an underlying intermediate metal layer for providing enhanced adhesion of the metallization to the substrate. An essentially inert, electrically insulating, hydrogen impermeable passivation layer covers at least one of the resistors, and at least one of the resistors is left uncovered. The difference in electrical resistances of the covered resistor and the uncovered resistor is related to hydrogen concentration in a gas to which the sensor element is exposed.

Thin film hydrogen sensor

DOEpatents

Lauf, R.J.; Hoffheins, B.S.; Fleming, P.H.

1994-11-22

A hydrogen sensor element comprises an essentially inert, electrically-insulating substrate having a thin-film metallization deposited thereon which forms at least two resistors on the substrate. The metallization comprises a layer of Pd or a Pd alloy for sensing hydrogen and an underlying intermediate metal layer for providing enhanced adhesion of the metallization to the substrate. An essentially inert, electrically insulating, hydrogen impermeable passivation layer covers at least one of the resistors, and at least one of the resistors is left uncovered. The difference in electrical resistances of the covered resistor and the uncovered resistor is related to hydrogen concentration in a gas to which the sensor element is exposed. 6 figs.

Ab initio study of friction of graphene flake on graphene/graphite or SiC surface

NASA Astrophysics Data System (ADS)

Gulseren, Oguz; Tayran, Ceren; Sayin, Ceren Sibel

Recently, the rich dynamics of graphene flake on graphite or SiC surfaces are revealed from atomic force microcopy experiments. The studies toward to the understanding of microscopic origin of friction are getting a lot of attention. Despite the several studies of these systems using molecular dynamics methods, density functional theory based investigations are limited because of the huge system sizes. In this study, we investigated the frictional force on graphene flake on graphite or SiC surfaces from pseudopotential planewave calculations based on density functional theory. In both cases, graphene flake (24 C) on graphite or SiC surface, bilayer flake is introduced by freezing the top layer as well as the bottom layer of the surface slab. After fixing the load with these frozen layers, we checked the relative motion of the flake over the surface. A minimum energy is reached when the flake is moved on graphene to attain AB stacking. We also conclude that edge reconstruction because of the finite size of the flake is very critical for frictional properties of the flake; therefore the saturation of dangling bonds with hydrogen is also addressed. Not only the symmetric configurations remaining parameter space is extensively studied. Supported by TUBITAK Project No: 114F162. This work is supported by TUBITAK Project No: 114F162.

Synthesis of Ti3AuC2, Ti3Au2C2 and Ti3IrC2 by noble metal substitution reaction in Ti3SiC2 for high-temperature-stable Ohmic contacts to SiC

NASA Astrophysics Data System (ADS)

Fashandi, Hossein; Dahlqvist, Martin; Lu, Jun; Palisaitis, Justinas; Simak, Sergei I.; Abrikosov, Igor A.; Rosen, Johanna; Hultman, Lars; Andersson, Mike; Lloyd Spetz, Anita; Eklund, Per

2017-08-01

The large class of layered ceramics encompasses both van der Waals (vdW) and non-vdW solids. While intercalation of noble metals in vdW solids is known, formation of compounds by incorporation of noble-metal layers in non-vdW layered solids is largely unexplored. Here, we show formation of Ti3AuC2 and Ti3Au2C2 phases with up to 31% lattice swelling by a substitutional solid-state reaction of Au into Ti3SiC2 single-crystal thin films with simultaneous out-diffusion of Si. Ti3IrC2 is subsequently produced by a substitution reaction of Ir for Au in Ti3Au2C2. These phases form Ohmic electrical contacts to SiC and remain stable after 1,000 h of ageing at 600 °C in air. The present results, by combined analytical electron microscopy and ab initio calculations, open avenues for processing of noble-metal-containing layered ceramics that have not been synthesized from elemental sources, along with tunable properties such as stable electrical contacts for high-temperature power electronics or gas sensors.

Safety, Codes, and Standards | Hydrogen and Fuel Cells | NREL

Science.gov Websites

to develop and test hydrogen sensor technologies. In addition to partnering with organizations in the and Validation of Prototype Hydrogen Sensors, P.K. Sekhar, J. Zhou, M.B. Post, L. Woo, W.J. Buttner , M.B. Post, C. Rivkin, R. Burgess, and W.J. Buttner, International Journal of Hydrogen Energy (March

Laser ultrasonic characterization of membranes for use as micro-electronic mechanical systems (MEMS)

NASA Astrophysics Data System (ADS)

Edwards, R. S.; Zhou, L. Q.; Pearce, M. J.; Prince, R. G.; Colston, G.; Myronov, M.; Leadley, D. R.; Trushkevych, O.

2017-02-01

Germanium (Ge) on Silicon (Si) has the potential to produce a wide variety of devices, including sensors, solar cells and transistors. Modification of these materials so that a suspended membrane layer is formed, through removing regions of the Si substrate, offers the potential for sensors with a more rapid response and higher sensitivity. Such membranes are a very simple micro-electronic mechanical system (MEMS). It is essential to ensure that the membranes are robust against shock and vibration, with well-characterised resonant frequencies, prior to any practical application. We present work using laser interferometry to characterise the resonant modes of membranes produced from Ge or silicon carbide (SiC) on a Si substrate, with the membranes typically having around 1 mm lateral dimensions. Two dimensional scanning of the sample enables visualisation of each mode. The stress measured from the resonant frequencies agrees well with that calculated from the growth conditions. SiC provides a more robust platform for electronics, while Ge offers better resonant properties. This offers a potential technique for characterising production quality or lifetime testing for the MEMS produced.

Surface Micromachined Silicon Carbide Accelerometers for Gas Turbine Applications

NASA Technical Reports Server (NTRS)

DeAnna, Russell G.

1998-01-01

A finite-element analysis of possible silicon carbide (SIC) folded-beam, lateral-resonating accelerometers is presented. Results include stiffness coefficients, acceleration sensitivities, resonant frequency versus temperature, and proof-mass displacements due to centripetal acceleration of a blade-mounted sensor. The surface micromachined devices, which are similar to the Analog Devices Inc., (Norwood, MA) air-bag crash detector, are etched from 2-pm thick, 3C-SiC films grown at 1600 K using atmospheric pressure chemical vapor deposition (APCVD). The substrate is a 500 gm-thick, (100) silicon wafer. Polysilicon or silicon dioxide is used as a sacrificial layer. The finite element analysis includes temperature-dependent properties, shape change due to volume expansion, and thermal stress caused by differential thermal expansion of the materials. The finite-element results are compared to experimental results for a SiC device of similar, but not identical, geometry. Along with changes in mechanical design, blade-mounted sensors would require on-chip circuitry to cancel displacements due to centripetal acceleration and improve sensitivity and bandwidth. These findings may result in better accelerometer designs for this application.

Slush hydrogen liquid level system

NASA Technical Reports Server (NTRS)

Hamlet, J. F.; Adams, R. G.

1972-01-01

A discrete capacitance liquid level system developed is specifically for slush hydrogen, but applicable to LOX, LN2, LH2, and RP1 without modification is described. The signal processing portion of the system is compatible with conventional liquid level sensors. Compatibility with slush hydrogen was achieved by designing the sensor with adequate spacing, while retaining the electrical characteristics of conventional sensors. Tests indicate excellent stability of the system over a temperature range of -20 C to 70 C for the circuit and to cryogenic temperatures of the sensor. The sensor was tested up to 40 g's rms random vibration with no damage to the sensor. Operation with 305 m of cable between the sensor and signal processor was demonstrated. It is concluded that this design is more than adequate for most flight and ground applications.

The Development of Silicon Carbide Based Hydrogen and Hydrocarbon Sensors

NASA Technical Reports Server (NTRS)

Liu, Chung-Chiun

1994-01-01

Silicon carbide is a high temperature electronic material. Its potential for development of chemical sensors in a high temperature environment has not been explored. The objective of this study is to use silicon carbide as the substrate material for the construction of chemical sensors for high temperature applications. Sensors for the detection of hydrogen and hydrocarbon are developed in this program under the auspices of Lewis Research Center, NASA. Metal-semiconductor or metal-insulator-semiconductor structures are used in this development. Specifically, using palladium-silicon carbide Schottky diodes as gas sensors in the temperature range of 100 to 400 C are designed, fabricated and assessed. The effect of heat treatment on the Pd-SiC Schottky diode is examined. Operation of the sensors at 400 C demonstrate sensitivity of the sensor to hydrogen and hydrocarbons. Substantial progress has been made in this study and we believe that the Pd-SiC Schottky diode has potential as a hydrogen and hydrocarbon sensor over a wide range of temperatures. However, the long term stability and operational life of the sensor need to be assessed. This aspect is an important part of our future continuing investigation.

Pellet cladding mechanical interactions of ceramic claddings fuels under light water reactor conditions

NASA Astrophysics Data System (ADS)

Li, Bo-Shiuan

Ceramic materials such as silicon carbide (SiC) are promising candidate materials for nuclear fuel cladding and are of interest as part of a potential accident tolerant fuel design due to its high temperature strength, dimensional stability under irradiation, corrosion resistance, and lower neutron absorption cross-section. It also offers drastically lower hydrogen generation in loss of coolant accidents such as that experienced at Fukushima. With the implementation of SiC material properties to the fuel performance code, FRAPCON, performances of the SiC-clad fuel are compared with the conventional Zircaloy-clad fuel. Due to negligible creep and high stiffness, SiC-clad fuel allows gap closure at higher burnup and insignificant cladding dimensional change. However, severe degradation of SiC thermal conductivity with neutron irradiation will lead to higher fuel temperature with larger fission gas release. High stiffness of SiC has a drawback of accumulating large interfacial pressure upon pellet-cladding mechanical interactions (PCMI). This large stress will eventually reach the flexural strength of SiC, causing failure of SiC cladding instantly in a brittle manner instead of the graceful failure of ductile metallic cladding. The large interfacial pressure causes phenomena that were previously of only marginal significance and thus ignored (such as creep of the fuel) to now have an important role in PCMI. Consideration of the fuel pellet creep and elastic deformation in PCMI models in FRAPCON provide for an improved understanding of the magnitude of accumulated interfacial pressure. Outward swelling of the pellet is retarded by the inward irradiation-induced creep, which then reduces the rate of interfacial pressure buildup. Effect of PCMI can also be reduced and by increasing gap width and cladding thickness. However, increasing gap width and cladding thickness also increases the overall thermal resistance which leads to higher fuel temperature and larger fission gas release. An optimum design is sought considering both thermal and mechanical models of this ceramic cladding with UO2 and advanced high density fuels.

Pd/Ag coated fiber Bragg grating sensor for hydrogen monitoring in power transformers.

PubMed

Ma, G M; Jiang, J; Li, C R; Song, H T; Luo, Y T; Wang, H B

2015-04-01

Compared with conventional DGA (dissolved gas analysis) method for on-line monitoring of power transformers, FBG (fiber Bragg grating) hydrogen sensor represents marked advantages over immunity to electromagnetic field, time-saving, and convenience to defect location. Thus, a novel FBG hydrogen sensor based on Pd/Ag (Palladium/Silver) along with polyimide composite film to measure dissolved hydrogen concentration in large power transformers is proposed in this article. With the help of Pd/Ag composite coating, the enhanced performance on mechanical strength and sensitivity is demonstrated, moreover, the response time and sensitivity influenced by oil temperature are solved by correction lines. Sensitivity measurement and temperature calibration of the specific hydrogen sensor have been done respectively in the lab. And experiment results show a high sensitivity of 0.055 pm/(μl/l) with instant response time about 0.4 h under the typical operating temperature of power transformers, which proves a potential utilization inside power transformers to monitor the health status by detecting the dissolved hydrogen concentration.

High Temperature Capacitive Pressure Sensor Employing a SiC Based Ring Oscillator

NASA Technical Reports Server (NTRS)

Meredith, Roger D.; Neudeck, Philip G.; Ponchak, George E.; Beheim, Glenn M.; Scardelletti, Maximilian; Jordan, Jennifer L.; Chen, Liang-Yu; Spry, David J.; Krawowski, Michael J.; Hunter, Gary W.

2011-01-01

In an effort to develop harsh environment electronic and sensor technologies for aircraft engine safety and monitoring, we have used capacitive-based pressure sensors to shift the frequency of a SiC-electronics-based oscillator to produce a pressure-indicating signal that can be readily transmitted, e.g. wirelessly, to a receiver located in a more benign environment. Our efforts target 500 C, a temperature well above normal operating conditions of commercial circuits but within areas of interest in aerospace engines, deep mining applications and for future missions to the Venus atmosphere. This paper reports for the first time a ring oscillator circuit integrated with a capacitive pressure sensor, both operating at 500 C. This demonstration represents a significant step towards a wireless pressure sensor that can operate at 500 C and confirms the viability of 500 C electronic sensor systems.

Stability of Ceramics in Hydrogen between 4000 and 4500 F

NASA Technical Reports Server (NTRS)

May, Charles E.; Koneval, Donald; Fryburg, George C.

1959-01-01

The various reactions that are possible between hydrogen and certain ceramic materials are discussed as well as the means of measuring the extent of such reactions. Powdered carbides, nitrides, borides, and oxides were tested. These materials were heated inductively in a tungsten cup between 4000 and 4500 F for two 1-hour periods under a static hydrogen atmosphere. Weight, pressure, and diffraction pattern changes were observed, and these served to indicate the extent of reaction. Most of the ceramics, HfC, ZrC, TiC, TaC, NbC, WC, MO2C, HfN, ZrN, NbN, ZrB2, NbB2, and WB, showed less reaction than the minimum detectable value. However, the ceramics, TiN, TaN, HfB2, TiB2, ZrO2, and Cr2O3, apparently reacted to a measurable extent with hydrogen. Reactions of SiC, VC, and TaB2 with hydrogen were not determinable because of their incompatibility with the tungsten container.

Chemochromic Hydrogen Sensors

NASA Technical Reports Server (NTRS)

Wiggins, Bryan C.

2007-01-01

As fossil fuel supplies decline, hydrogen is quickly becoming an increasingly important fuel source. Currently hydrogen is the prime fuel of today's space vehicles (e.g., Space Shuttle) and featured as a fuel for some prototype vehicles such as the BMW seven series model. Hydrogen is a colorless, odorless gas with a 4% lower explosive limit which makes leak detection a priority. In an effort to support the use of hydrogen, a chemochromic (color changing) sensor was developed that is robust, simple to use, and does not require active operation. It can be made into a thin tape which can be conveniently used for leak detection at flanges, valves, or outlets. Chemochromic sensors can be either reversible or irreversible; however, irreversible chemochromic sensors will be analyzed in this report. The irreversible sensor is useful during hazardous operations when personnel cannot be present. To actively monitor leaks, testing of the irreversible sensor against environmental effects was completed and results indicated this material is suitable for outdoor use in the harsh beachside environment of Kennedy Space Center. The experiments in this report will give additional results to the environmental testing by adding solid rocket booster residue as a variable. The primary motivation for these experiments is to prepare the sensors for the launch pad environment at the Kennedy Space Center. In an effort to simulate the atmosphere at the pads before and after launch, the chemochromic sensors are exposed to solid rocket residue under various conditions.

Fabrication of highly sensitive and selective H₂ gas sensor based on SnO₂ thin film sensitized with microsized Pd islands.

PubMed

Nguyen, Van Toan; Nguyen, Viet Chien; Nguyen, Van Duy; Hoang, Si Hong; Hugo, Nguyen; Nguyen, Duc Hoa; Nguyen, Van Hieu

2016-01-15

Ultrasensitive and selective hydrogen gas sensor is vital component in safe use of hydrogen that requires a detection and alarm of leakage. Herein, we fabricated a H2 sensing devices by adopting a simple design of planar-type structure sensor in which the heater, electrode, and sensing layer were patterned on the front side of a silicon wafer. The SnO2 thin film-based sensors that were sensitized with microsized Pd islands were fabricated at a wafer-scale by using a sputtering system combined with micro-electronic techniques. The thicknesses of SnO2 thin film and microsized Pd islands were optimized to maximize the sensing performance of the devices. The optimized sensor could be used for monitoring hydrogen gas at low concentrations of 25-250 ppm, with a linear dependence to H2 concentration and a fast response and recovery time. The sensor also showed excellent selectivity for monitoring H2 among other gases, such as CO, NH3, and LPG, and satisfactory characteristics for ensuring safety in handling hydrogen. The hydrogen sensing characteristics of the sensors sensitized with Pt and Au islands were also studied to clarify the sensing mechanisms. Copyright © 2015 Elsevier B.V. All rights reserved.

Morphology and electronic properties of silicon carbide surfaces

NASA Astrophysics Data System (ADS)

Nie, Shu

2007-12-01

Several issues related to SiC surfaces are studied in the thesis using scanning tunneling microscopy/spectroscopy (STM/S) and atomic force microscopy (AFM). Specific surfaces examined include electropolished SiC, epitaxial graphene on SiC, and vicinal (i.e. slightly miscut from a low-index direction) SiC that have been subjected to high temperature hydrogen-etching. The electropolished surfaces are meant to mimic electrochemically etched SiC, which forms a porous network. The chemical treatment of the surface is similar between electropolishing and electrochemical etching, but the etching conditions are slightly different such that the former produces a flat surface (that is amenable to STM study) whereas the latter produces a complex 3-dimensional porous network. We have used these porous SiC layers as semi-permeable membranes in a biosensor, and we find that the material is quite biocompatible. The purpose of the STM/STS study is to investigate the surface properties of the SiC on the atomic scale in an effort to explain this biocompatibility. The observed tunneling spectra are found to be very asymmetric, with a usual amount of current at positive voltages but no observable current at negative voltages. We propose that this behavior is due to surface charge accumulating on an incompletely passivated surface. Measurements on SiC surfaces prepared by various amounts of hydrogen-etching are used to support this interpretation. Comparison with tunneling computations reveals a density of about 10 13 cm-2 fixed charges on both the electro-polished and the H-etched surfaces. The relatively insulating nature observed on the electro-polished SiC surface may provide an explanation for the biocompatibility of the surface. Graphene, a monolayer of carbon, is a new material for electronic devices. Epitaxial graphene on SiC is fabricated by the Si sublimation method in which a substrate is heated up to about 1350°C in ultra-high vacuum (UHV). The formation of the graphene is monitored using low-energy electron diffraction (LEED) and Auger electron spectroscopy, and the morphology of the graphitized surface is studied using AFM and STM. Use of H-etched SiC substrates enables a relatively flat surface morphology, although residual steps remain due to unintentional miscut of the wafers. Additionally, some surface roughness in the form of small pits is observed, possibly due to the fact that the surface treatments (H-etching and UHV annealing) having been performed in separate vacuum chambers with an intervening transfer through air. Field-effect transistors have been fabricated with our graphene layers; they show a relatively strong held effect at room temperature, with an electron mobility of 535 cm 2/Vs. This value is somewhat lower than that believed to be theoretically possible for this material, and one possible reason may be the nonideal morphology of the surface (i.e. because of the observed steps and pits). Tunneling spectra of the graphene reveal semi-metallic behavior, consistent with that theoretically expected for an isolated layer of graphene. However, additional discrete states are observed in the spectra, possibly arising from bonding at the graphene/SiC interface. The observation of these states provides important input towards an eventual determination of the complete interface structure, and additionally, such states may be relevant in determining the electron mobility of the graphene. Stepped vicinal SIC{0001} substrates are useful templates for epitaxial growth of various types of layers: thick layers of compound semiconductor (in which the steps help preserving the stacking arrangement in the overlayer), monolayers of graphene, or submonolayer semiconductor layers that form quantum wires along the step edges. Step array produced by H-etching of vicinal SiC (0001) and (0001¯) with various miscut angles have been studied by AFM. H-etching is found to produce full unit-cell-high steps on the (0001) Si-face surfaces, but half unit-cell-high steps on the (0001¯) C-face surfaces. These observations are consistent with an asymmetry in the surface energy (i.e. etch rate) of the two types of step terminations occurring on the different surfaces. For high miscut angles, facet formation is observed on the vicinal Si-face, but less so on the C-face. This difference is interpreted in terms of a lower surface energy of the C-face. In terms of applying the stepped surfaces as a template, a much better uniformity in the step-step separation is found for the C-face surfaces.

A Hydrogen Leak Detection System for Aerospace and Commercial Applications

NASA Technical Reports Server (NTRS)

Hunter, Gary W.; Makel, D. B.; Jansa, E. D.; Patterson, G.; Cova, P. J.; Liu, C. C.; Wu, Q. H.; Powers, W. T.

1995-01-01

Leaks on the space shuttle while on the launch pad have generated interest in hydrogen leak monitoring technology. Microfabricated hydrogen sensors are being fabricated at Case Western Reserve University (CWRU) and tested at NASA Lewis Research Center (LeRC). These sensors have been integrated into hardware and software designed by Aerojet. This complete system allows for multipoint leak monitoring designed to provide leak source and magnitude information in real time. The monitoring system processes data from the hydrogen sensors and presents the operator with a visual indication of the leak location and magnitude. Although the leak monitoring system was designed for hydrogen propulsion systems, the possible applications of this monitoring system are wide ranged. This system is in operation in an automotive application which requires high sensitivity to hydrogen.

Development of a Prototype Optical Hydrogen Gas Sensor Using a Getter-Doped Polymer Transducer for Monitoring Cumulative Exposure: Preliminary Results

DOE Office of Scientific and Technical Information (OSTI.GOV)

Small IV, W; Maitland, D J; Wilson, T S

2008-06-05

A novel prototype optical sensor for monitoring cumulative hydrogen gas exposure was fabricated and evaluated. Chemical-to-optical transduction was accomplished by detecting the intensity of 670 nm laser light transmitted through a hydrogen getter-doped polymer film mounted at the end of an optical fiber; the transmittance of the composite film increased with uptake of hydrogen by the embedded getter. The composite film consisted of the hydrogen getter 1,4-bis(phenylethynyl)benzene, also known as DEB, with carbon-supported palladium catalyst embedded in silicone elastomer. Because the change in transmittance was irreversible and occurred continuously as the getter captured hydrogen, the sensor behaved like a dosimeter,more » providing a unique indication of the cumulative gas exposure.« less

Around Marshall

NASA Image and Video Library

1963-09-18

At its founding, the Marshall Space Flight Center (MSFC) inherited the Army’s Jupiter and Redstone test stands, but much larger facilities were needed for the giant stages of the Saturn V. From 1960 to 1964, the existing stands were remodeled and a sizable new test area was developed. The new comprehensive test complex for propulsion and structural dynamics was unique within the nation and the free world, and they remain so today because they were constructed with foresight to meet the future as well as on going needs. Construction of the S-IC Static test stand complex began in 1961 in the west test area of MSFC, and was completed in 1964. The S-IC static test stand was designed to develop and test the 138-ft long and 33-ft diameter Saturn V S-IC first stage, or booster stage, weighing in at 280,000 pounds. Required to hold down the brute force of a 7,500,000-pound thrust produced by 5 F-1 engines, the S-IC static test stand was designed and constructed with the strength of hundreds of tons of steel and 12,000,000 pounds of cement, planted down to bedrock 40 feet below ground level. The foundation walls, constructed with concrete and steel, are 4 feet thick. The base structure consists of four towers with 40-foot-thick walls extending upward 144 feet above ground level. The structure was topped by a crane with a 135-foot boom. With the boom in the upright position, the stand was given an overall height of 405 feet, placing it among the highest structures in Alabama at the time. In addition to the stand itself, related facilities were constructed during this time. This photograph taken September 18, 1963 shows a spherical hydrogen tank being constructed next to the S-IC test stand.

Application of a catalytic combustion sensor (Pellistor) for the monitoring of the explosiveness of a hydrogen-air mixture in the upper explosive limit range

PubMed Central

Krawczyk, M.; Namiesnik, J.

2003-01-01

A new technique is presented for continuous measurements of hydrogen contamination by air in the upper explosive limit range. It is based on the application of a catalytic combustion sensor placed in a cell through which the tested sample passes. The air content is the function of the quantity of formed heat during catalytic combustion of hydrogen inside the sensor. There is the possibility of using the method in industrial installations by using hydrogen for cooling electric current generators. PMID:18924620

Thermodynamic analysis of chemical stability of ceramic materials in hydrogen-containing atmospheres at high temperatures

NASA Technical Reports Server (NTRS)

Misra, Ajay K.

1990-01-01

The chemical stability of several ceramic materials in hydrogen-containing environments was analyzed with thermodynamic considerations in mind. Equilibrium calculations were made as a function of temperature, moisture content, and total system pressure. The following ceramic materials were considered in this study: SiC, Si3N4, SiO2, Al2O3, mullite, ZrO2, Y2O3, CaO, MgO, BeO, TiB2, TiC, HfC, and ZrC. On the basis of purely thermodynamic arguments, upper temperature limits are suggested for each material for long-term use in H2-containing atmospheres.

Method of maintaining activity of hydrogen-sensing platinum electrode

NASA Technical Reports Server (NTRS)

Harman, J. N., III

1968-01-01

Three-electrode hydrogen sensor containing a platinum electrode maintained in a highly catalytic state, operates with a minimal response time and maximal sensitivity to the hydrogen gas being sensed. Electronic control and readout circuitry reactivates the working electrode of the sensor to a state of maximal catalytic activity.

Efficient room temperature hydrogen sensor based on UV-activated ZnO nano-network

NASA Astrophysics Data System (ADS)

Kumar, Mohit; Kumar, Rahul; Rajamani, Saravanan; Ranwa, Sapana; Fanetti, Mattia; Valant, Matjaz; Kumar, Mahesh

2017-09-01

Room temperature hydrogen sensors were fabricated from Au embedded ZnO nano-networks using a 30 mW GaN ultraviolet LED. The Au-decorated ZnO nano-networks were deposited on a SiO2/Si substrate by a chemical vapour deposition process. X-ray diffraction (XRD) spectrum analysis revealed a hexagonal wurtzite structure of ZnO and presence of Au. The ZnO nanoparticles were interconnected, forming nano-network structures. Au nanoparticles were uniformly distributed on ZnO surfaces, as confirmed by FESEM imaging. Interdigitated electrodes (IDEs) were fabricated on the ZnO nano-networks using optical lithography. Sensor performances were measured with and without UV illumination, at room temperate, with concentrations of hydrogen varying from 5 ppm to 1%. The sensor response was found to be ˜21.5% under UV illumination and 0% without UV at room temperature for low hydrogen concentration of 5 ppm. The UV-photoactivated mode enhanced the adsorption of photo-induced O- and O2- ions, and the d-band electron transition from the Au nanoparticles to ZnO—which increased the chemisorbed reaction between hydrogen and oxygen. The sensor response was also measured at 150 °C (without UV illumination) and found to be ˜18% at 5 ppm. Energy efficient low cost hydrogen sensors can be designed and fabricated with the combination of GaN UV LEDs and ZnO nanostructures.

800 C Silicon Carbide (SiC) Pressure Sensors for Engine Ground Testing

NASA Technical Reports Server (NTRS)

Okojie, Robert S.

2016-01-01

MEMS-based 4H-SiC piezoresistive pressure sensors have been demonstrated at 800 C, leading to the discovery of strain sensitivity recovery with increasing temperatures above 400 C, eventually achieving up to, or near, 100 recovery of the room temperature values at 800 C. This result will allow the insertion of highly sensitive pressure sensors closer to jet, rocket, and hypersonic engine combustion chambers to improve the quantification accuracy of combustor dynamics, performance, and increase safety margin. Also, by operating at higher temperature and locating closer to the combustion chamber, reduction of the length (weight) of pressure tubes that are currently used will be achieved. This will result in reduced costlb to access space.

Predictive sensor method and apparatus

NASA Technical Reports Server (NTRS)

Nail, William L. (Inventor); Koger, Thomas L. (Inventor); Cambridge, Vivien (Inventor)

1990-01-01

A predictive algorithm is used to determine, in near real time, the steady state response of a slow responding sensor such as hydrogen gas sensor of the type which produces an output current proportional to the partial pressure of the hydrogen present. A microprocessor connected to the sensor samples the sensor output at small regular time intervals and predicts the steady state response of the sensor in response to a perturbation in the parameter being sensed, based on the beginning and end samples of the sensor output for the current sample time interval.

Palladium Gate All Around - Hetero Dielectric -Tunnel FET based highly sensitive Hydrogen Gas Sensor

NASA Astrophysics Data System (ADS)

Madan, Jaya; Chaujar, Rishu

2016-12-01

The paper presents a novel highly sensitive Hetero-Dielectric-Gate All Around Tunneling FET (HD-GAA-TFET) based Hydrogen Gas Sensor, incorporating the advantages of band to band tunneling (BTBT) mechanism. Here, the Palladium supported silicon dioxide is used as a sensing media and sensing relies on the interaction of hydrogen with Palladium-SiO2-Si. The high surface to volume ratio in the case of cylindrical GAA structure enhances the fortuities for surface reactions between H2 gas and Pd, and thus improves the sensitivity and stability of the sensor. Behaviour of the sensor in presence of hydrogen and at elevated temperatures is discussed. The conduction path of the sensor which is dependent on sensors radius has also been varied for the optimized sensitivity and static performance analysis of the sensor where the proposed design exhibits a superior performance in terms of threshold voltage, subthreshold swing, and band to band tunneling rate. Stability of the sensor with respect to temperature affectability has also been studied, and it is found that the device is reasonably stable and highly sensitive over the bearable temperature range. The successful utilization of HD-GAA-TFET in gas sensors may open a new door for the development of novel nanostructure gas sensing devices.

A fast response hydrogen sensor with Pd metallic grating onto a fiber's end-face

NASA Astrophysics Data System (ADS)

Yan, Haitao; Zhao, Xiaoyan; Zhang, Chao; Li, Qiu-Ze; Cao, Jingxiao; Han, Dao-Fu; Hao, Hui; Wang, Ming

2016-01-01

We demonstrated an integrated hydrogen sensor with Pd metallic grating fabricated on a fiber end-face. The grating consists of three thin metal layers in stacks, Au, WO3 and Pd. The WO3 is used as a waveguide layer between the Pd and Au layer. The Pd layer is etched by using a focused ion beam (FIB) method, forming a Pd metallic grating with period of 450 nm. The sensor is experimentally exposed to hydrogen gas environment. Changing the concentration from 0% to 4% which is the low explosive limit (LEL), the resonant wavelength measured from the reflection experienced 28.10 nm spectral changes in the visible range. The results demonstrated that the sensor is sensitive for hydrogen detection and it has fast response and low temperature effect.

A modified cross-correlation method for white-light optical fiber extrinsic Fabry-Perot interferometric hydrogen sensors

NASA Astrophysics Data System (ADS)

Yang, Zhen; Zhang, Min; Liao, Yanbiao; Lai, Shurong; Tian, Qian; Li, Qisheng; Zhang, Yi; Zhuang, Zhi

2009-11-01

An extrinsic Fabry-Perot interferometric (EFPI) optical fiber hydrogen sensor based on palladium silver (Pd-Ag) film is designed for hydrogen leakage detection. A modified cross correlation signal processing method for an optical fiber EFPI hydrogen sensor is presented. As the applying of a special correlating factor which advises the effect on the fringe visibility of the gap length and wavelength, the cross correlation method has a high accuracy which is insensitive to light source power drift or changes in attenuation in the fiber, and the segment search method is employed to reduce computation and demodulating speed is fast. The Fabry-Perot gap length resolution of better than 0.2nm is achieved in a certain concentration of hydrogen.

Note: Dissolved hydrogen detection in power transformer oil based on chemically etched fiber Bragg grating.

PubMed

Jiang, Jun; Ma, Guo-ming; Song, Hong-tu; Zhou, Hong-yang; Li, Cheng-rong; Luo, Ying-ting; Wang, Hong-bin

2015-10-01

A fiber Bragg grating (FBG) sensor based on chemically etched cladding to detect dissolved hydrogen is proposed and studied in this paper. Low hydrogen concentration tests have been carried out in mixed gases and transformer oil to investigate the repeatability and sensitivity. Moreover, to estimate the influence of etched cladding thickness, a physical model of FBG-based hydrogen sensor is analyzed. Experimental results prove that thin cladding chemically etched by HF acid solution improves the response to hydrogen detection in oil effectively. At last, the sensitivity of FBG sensor chemically etched 16 μm could be as high as 0.060 pm/(μl/l), increased by more than 30% in comparison to un-etched FBG.

Improved Sensitivity with Low Limit of Detection of a Hydrogen Gas Sensor Based on rGO-Loaded Ni-Doped ZnO Nanostructures.

PubMed

Bhati, Vijendra Singh; Ranwa, Sapana; Rajamani, Saravanan; Kumari, Kusum; Raliya, Ramesh; Biswas, Pratim; Kumar, Mahesh

2018-04-04

We report enhanced hydrogen-gas-sensing performance of a Ni-doped ZnO sensor decorated with the optimum concentration of reduced graphene oxide (rGO). Ni-doped ZnO nanoplates were grown by radio frequency sputtering, rGO was synthesized by Hummer's method and decorated by the drop cast method of various concentration of rGO (0-1.5 wt %). The current-voltage characteristics of the rGO-loaded sensor are highly influenced by the loading concentration of rGO, where current conduction decreases and sensor resistance increases as the rGO concentration is increased up to 0.75 wt % because of the formation of various Schottky heterojunctions at rGO/ZnO interfaces. With the combined effect of more active site availability and formation of various p-n heterojunctions due to the optimum loading concentration of rGO (0.75 wt %), the sensor shows the maximum sensing response of ∼63.8% for 100 ppm hydrogen at moderate operating temperature (150 °C). The rGO-loaded sensors were able to detect a minimum of 1 ppm hydrogen concentration and showed high selectivity. However, a further increase in the rGO concentration (1.5 wt %) leads to the reduction of the relative response of hydrogen gas, ascribed to the formation of interconnections of rGO between electrodes. Therefore, it reduces the total resistance of the sensor and minimizes the effect of p-n heterojunction on sensor response.

Thick film hydrogen sensor

DOEpatents

Hoffheins, Barbara S.; Lauf, Robert J.

1995-01-01

A thick film hydrogen sensor element includes an essentially inert, electrically-insulating substrate having deposited thereon a thick film metallization forming at least two resistors. The metallization is a sintered composition of Pd and a sinterable binder such as glass frit. An essentially inert, electrically insulating, hydrogen impermeable passivation layer covers at least one of the resistors.

Thick film hydrogen sensor

DOEpatents

Hoffheins, B.S.; Lauf, R.J.

1995-09-19

A thick film hydrogen sensor element includes an essentially inert, electrically-insulating substrate having deposited thereon a thick film metallization forming at least two resistors. The metallization is a sintered composition of Pd and a sinterable binder such as glass frit. An essentially inert, electrically insulating, hydrogen impermeable passivation layer covers at least one of the resistors. 8 figs.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Nabeel A. Riza

The goals of the this part of the Continuation Phase 2 period (Oct. 1, 06 to March 31, 07) of this project were to (a) fabricate laser-doped SiC wafers and start testing the SiC chips for individual gas species sensing under high temperature and pressure conditions and (b) demonstrate the designs and workings of a temperature probe suited for industrial power generation turbine environment. A focus of the reported work done via Kar UCF LAMP lab. is to fabricate the embedded optical phase or doped microstructures based SiC chips, namely, Chromium (C), Boron (B) and Aluminum (Al) doped 4H-SiC, andmore » to eventually deploy such laser-doped chips to enable gas species sensing under high temperature and pressure. Experimental data is provided from SiC chip optical response for various gas species such as pure N2 and mixtures of N2 and H{sub 2}, N{sub 2} and CO, N{sub 2} and CO{sub 2}, and N{sub 2} and CH{sub 4}. Another main focus of the reported work was a temperature sensor probe assembly design and initial testing. The probe transmit-receive fiber optics were designed and tested for electrically controlled alignment. This probe design was provided to overcome mechanical vibrations in typical industrial scenarios. All these goals have been achieved and are described in detail in the report.« less

Alumina Based 500 C Electronic Packaging Systems and Future Development

NASA Technical Reports Server (NTRS)

Chen, Liang-Yu

2012-01-01

NASA space and aeronautical missions for probing the inner solar planets as well as for in situ monitoring and control of next-generation aeronautical engines require high-temperature environment operable sensors and electronics. A 96% aluminum oxide and Au thick-film metallization based packaging system including chip-level packages, printed circuit board, and edge-connector is in development for high temperature SiC electronics. An electronic packaging system based on this material system was successfully tested and demonstrated with SiC electronics at 500 C for over 10,000 hours in laboratory conditions previously. In addition to the tests in laboratory environments, this packaging system has more recently been tested with a SiC junction field effect transistor (JFET) on low earth orbit through the NASA Materials on the International Space Station Experiment 7 (MISSE7). A SiC JFET with a packaging system composed of a 96% alumina chip-level package and an alumina printed circuit board mounted on a data acquisition circuit board was launched as a part of the MISSE7 suite to International Space Station via a Shuttle mission and tested on the orbit for eighteen months. A summary of results of tests in both laboratory and space environments will be presented. The future development of alumina based high temperature packaging using co-fired material systems for improved performance at high temperature and more feasible mass production will also be discussed.

Aerospace Sensor Systems: From Sensor Development To Vehicle Application

NASA Technical Reports Server (NTRS)

Hunter, Gary W.

2008-01-01

This paper presents an overview of years of sensor system development and application for aerospace systems. The emphasis of this work is on developing advanced capabilities for measurement and control of aeropropulsion and crew vehicle systems as well as monitoring the safety of those systems. Specific areas of work include chemical species sensors, thin film thermocouples and strain gages, heat flux gages, fuel gages, SiC based electronic devices and sensors, space qualified electronics, and MicroElectroMechanical Systems (MEMS) as well as integrated and multifunctional sensor systems. Each sensor type has its own technical challenges related to integration and reliability in a given application. The general approach has been to develop base sensor technology using microfabrication techniques, integrate sensors with "smart" hardware and software, and demonstrate those systems in a range of aerospace applications. Descriptions of the sensor elements, their integration into sensors systems, and examples of sensor system applications will be discussed. Finally, suggestions related to the future of sensor technology will be given. It is concluded that smart micro/nano sensor technology can revolutionize aerospace applications, but significant challenges exist in maturing the technology and demonstrating its value in real-life applications.

Electrochemical sensor for monitoring electrochemical potentials of fuel cell components

DOEpatents

Kunz, Harold R.; Breault, Richard D.

1993-01-01

An electrochemical sensor comprised of wires, a sheath, and a conduit can be utilized to monitor fuel cell component electric potentials during fuel cell shut down or steady state. The electrochemical sensor contacts an electrolyte reservoir plate such that the conduit wicks electrolyte through capillary action to the wires to provide water necessary for the electrolysis reaction which occurs thereon. A voltage is applied across the wires of the electrochemical sensor until hydrogen evolution occurs at the surface of one of the wires, thereby forming a hydrogen reference electrode. The voltage of the fuel cell component is then determined with relation to the hydrogen reference electrode.

Superconducting characteristics of short MgB2 wires of long level sensor for liquid hydrogen

NASA Astrophysics Data System (ADS)

Takeda, M.; Inoue, Y.; Maekawa, K.; Matsuno, Y.; Fujikawa, S.; Kumakura, H.

2015-12-01

To establish the worldwide storage and marine transport of hydrogen, it is important to develop a high-precision and long level sensor, such as a superconducting magnesium diboride (MgB2) level sensor for large liquid hydrogen (LH2) tanks on board ships. Three 1.7- m-long MgB2 wires were fabricated by an in situ method, and the superconducting characteristics of twenty-four 20-mm-long MgB2 wires on the 1.7-m-long wires were studied. In addition, the static level-detecting characteristics of five 500-mm-long MgB2 level sensors were evaluated under atmospheric pressure.

Hydrogen FBG sensor using Pd/Ag film with application in propulsion system fuel tank model of aerospace vehicle

NASA Astrophysics Data System (ADS)

Saad, Said; Hassine, Lotfi; Elfahem, Wassim

2014-09-01

The high efficiency hydrogen fiber Bragg grating (FBG) sensor is presented. The sensitive film was a new alliance of palladium-silver (Pd-Ag). In addition, the titanium (Ti) layer was used as the adhesive layer. The presented sensor showed the resolution of more than 60 pm/1% H2, and a fast response time of 4 s-5 s was guaranteed in the 0.1% H2-4% H2 range. Moreover, the life time of the sensor was investigated. The obtained results showed that the sensor had an enhanced life time. Furthermore, the sensor was applied in the propulsion system fuel tank model of the aerospace vehicle. The obtained results indicated that it is a prevention system against the disaster aerospace due to hydrogen leakage.

Chemical-Vapor Deposition Of Silicon Carbide

NASA Technical Reports Server (NTRS)

Cagliostro, D. E.; Riccitiello, S. R.; Ren, J.; Zaghi, F.

1993-01-01

Report describes experiments in chemical-vapor deposition of silicon carbide by pyrolysis of dimethyldichlorosilane in hydrogen and argon carrier gases. Directed toward understanding chemical-kinetic and mass-transport phenomena affecting infiltration of reactants into, and deposition of SiC upon, fabrics. Part of continuing effort to develop method of efficient and more nearly uniform deposition of silicon carbide matrix throughout fabric piles to make improved fabric/SiC-matrix composite materials.

Highly Sensitive and Selective Hydrogen Gas Sensor Using the Mesoporous SnO₂ Modified Layers.

PubMed

Xue, Niuzi; Zhang, Qinyi; Zhang, Shunping; Zong, Pan; Yang, Feng

2017-10-14

It is important to improve the sensitivities and selectivities of metal oxide semiconductor (MOS) gas sensors when they are used to monitor the state of hydrogen in aerospace industry and electronic field. In this paper, the ordered mesoporous SnO₂ (m-SnO₂) powders were prepared by sol-gel method, and the morphology and structure were characterized by X-ray diffraction analysis (XRD), transmission electron microscope (TEM) and Brunauer-Emmett-Teller (BET). The gas sensors were fabricated using m-SnO₂ as the modified layers on the surface of commercial SnO₂ (c-SnO₂) by screen printing technology, and tested for gas sensing towards ethanol, benzene and hydrogen with operating temperatures ranging from 200 °C to 400 °C. Higher sensitivity was achieved by using the modified m-SnO₂ layers on the c-SnO₂ gas sensor, and it was found that the S(c/m2) sensor exhibited the highest response (Ra/Rg = 22.2) to 1000 ppm hydrogen at 400 °C. In this paper, the mechanism of the sensitivity and selectivity improvement of the gas sensors is also discussed.

Fully-reversible optical sensor for hydrogen peroxide with fast response.

PubMed

Ding, Longjiang; Chen, Siyu; Zhang, Wei; Zhang, Yinglu; Wang, Xu-Dong

2018-05-09

A fully reversible optical sensor for hydrogen peroxide with fast response is presented. The sensor was fabricated by in-situ growing ultra-small platinum nanoparticles (PtNPs) inside the pores of fibrous silica particles (KCC-1). The nanocomposite was then embedded into a hydrogel matrix and form a sensor layer, the immobilized PtNPs can catalytically convert hydrogen peroxide into molecular oxygen, which is measured via luminescent quenching based oxygen sensor underneath. Owing to the high porosity and permeability of KCC-1 and high local concentration of PtNPs, the sensor exhibits fast response (less than 1 min) and full reversibility. The measurement range of the sensor covers 1.0 μM to 10.0 mM, and very small amount of sample is required during measurement (200 μL). Because of its high stability, excellent reversibility and selectivity, and extremely fast response, the sensor could fulfill all industry requirements for real-time measurement, and fill market vacancy.

Porous palladium coated conducting polymer nanoparticles for ultrasensitive hydrogen sensors

NASA Astrophysics Data System (ADS)

Lee, Jun Seop; Kim, Sung Gun; Cho, Sunghun; Jang, Jyongsik

2015-12-01

Hydrogen, a clean-burning fuel, is of key importance to various industrial applications, including fuel cells and in the aerospace and automotive industries. However, hydrogen gas is odorless, colorless, and highly flammable; thus appropriate safety protocol implementation and monitoring are essential. Highly sensitive hydrogen leak detection and surveillance sensor systems are needed; additionally, the ability to maintain uniformity through repetitive hydrogen sensing is becoming increasingly important. In this report, we detail the fabrication of porous palladium coated conducting polymer (3-carboxylate polypyrrole) nanoparticles (Pd@CPPys) to detect hydrogen gas. The Pd@CPPys are produced by means of facile alkyl functionalization and chemical reduction of a pristine 3-carboxylate polypyrrole nanoparticle-contained palladium precursor (PdCl2) solution. The resulting Pd@CPPy-based sensor electrode exhibits ultrahigh sensitivity (0.1 ppm) and stability toward hydrogen gas at room temperature due to the palladium sensing layer.Hydrogen, a clean-burning fuel, is of key importance to various industrial applications, including fuel cells and in the aerospace and automotive industries. However, hydrogen gas is odorless, colorless, and highly flammable; thus appropriate safety protocol implementation and monitoring are essential. Highly sensitive hydrogen leak detection and surveillance sensor systems are needed; additionally, the ability to maintain uniformity through repetitive hydrogen sensing is becoming increasingly important. In this report, we detail the fabrication of porous palladium coated conducting polymer (3-carboxylate polypyrrole) nanoparticles (Pd@CPPys) to detect hydrogen gas. The Pd@CPPys are produced by means of facile alkyl functionalization and chemical reduction of a pristine 3-carboxylate polypyrrole nanoparticle-contained palladium precursor (PdCl2) solution. The resulting Pd@CPPy-based sensor electrode exhibits ultrahigh sensitivity (0.1 ppm) and stability toward hydrogen gas at room temperature due to the palladium sensing layer. Electronic supplementary information (ESI) available: BET surface area and pore distribution of palladium architectures without CPPyNPs; Hydrogen sensing ability of palladium architectures without CPPyNPs; HR-TEM image of Pd@CPPy_C16 after 100 cycle exposure of H2. See DOI: 10.1039/c5nr06193h

Selectivity and resistance to poisons of commercial hydrogen sensors

DOE PAGES

Palmisano, V.; Weidner, E.; Boon-Brett, L.; ...

2015-03-20

The resistance of several models of catalytic, workfunction-based metal-oxide-semiconductor and electrochemical hydrogen sensors to chemical contaminants such as SO 2, H 2S, NO 2 and hexamethyldisiloxane (HMDS) has been investigated. These sensor platforms are among the most commonly used for the detection of hydrogen. The evaluation protocols were based on the methods recommended in the ISO 26142:2010 standard. Permanent alteration of the sensor response to the target analyte (H 2) following exposure to potential poisons at the concentrations specified in ISO 26142 was rarely observed. Although a shift in the baseline response was often observed during exposure to the potentialmore » poisons, only in a few cases did this shift persist after removal of the contaminants. Overall, the resistance of the sensors to poisoning was good. However, a change in sensitivity to hydrogen was observed in the electrochemical platform after exposure to NO 2 and for a catalytic sensor during exposure to SO 2. The siloxane resistance test prescribed in ISO 26142, based on exposure to 10 ppm HMDS, may possibly not properly reflect sensor robustness to siloxanes. In conclusion, further evaluation of the resistance of sensors to other Si-based contaminants and other exposure profiles (e.g., concentration, exposure times) is needed.« less

Ortho and para hydrogen dimers on G/SiC(0001): combined STM and DFT study.

PubMed

Merino, P; Švec, M; Martínez, J I; Mutombo, P; Gonzalez, C; Martín-Gago, J A; de Andres, P L; Jelinek, P

2015-01-01

The hydrogen (H) dimer structures formed upon room-temperature H adsorption on single layer graphene (SLG) grown on SiC(0001) are addressed using a combined theoretical-experimental approach. Our study includes density functional theory (DFT) calculations for the full (6√3 × 6√3)R30° unit cell of the SLG/SiC(0001) substrate and atomically resolved scanning tunneling microscopy images determining simultaneously the graphene lattice and the internal structure of the H adsorbates. We show that H atoms normally group in chemisorbed coupled structures of different sizes and orientations. We make an atomic scale determination of the most stable experimental geometries, the small dimers and ellipsoid-shaped features, and we assign them to hydrogen adsorbed in para dimers and ortho dimers configuration, respectively, through comparison with the theory.

Nanoporous Silicon Carbide for Nanoelectromechanical Systems Applications

NASA Technical Reports Server (NTRS)

Hossain, T.; Khan, F.; Adesida, I.; Bohn, P.; Rittenhouse, T.; Lienhard, Michael (Technical Monitor)

2003-01-01

A major goal of this project is to produce porous silicon carbide (PSiC) via an electroless process for eventual utilization in nanoscale sensing platforms. Results in the literature have shown a variety of porous morphologies in SiC produced in anodic cells. Therefore, predictability and reproducibility of porous structures are initial concerns. This work has concentrated on producing morphologies of known porosity, with particular attention paid toward producing the extremely high surface areas required for a porous flow sensor. We have conducted a parametric study of electroless etching conditions and characteristics of the resulting physical nanostructure and also investigated the relationship between morphology and materials properties. Further, we have investigated bulk etching of SiC using both photo-electrochemical etching and inductively-coupled-plasma reactive ion etching techniques.

Nanoplasmonic hydrogen sensing

NASA Astrophysics Data System (ADS)

Wadell, Carl; Syrenova, Svetlana; Langhammer, Christoph

2014-09-01

In this review we discuss the evolution of surface plasmon resonance and localized surface plasmon resonance based hydrogen sensors. We put particular focus on how they are used to study metal-hydrogen interactions at the nanoscale, both at the ensemble and the single nanoparticle level. Such efforts are motivated by a fundamental interest in understanding the role of nanosizing on metal hydride formation processes. However, nanoplasmonic hydrogen sensors are not only of academic interest but may also find more practical use as all-optical gas detectors in industrial and medical applications, as well in a future hydrogen economy, where hydrogen is used as a carbon free energy carrier.

Fiber optic hydrogen sensors: a review

NASA Astrophysics Data System (ADS)

Yang, Minghong; Dai, Jixiang

2014-12-01

Hydrogen is one of the next generation energies in the future, which shows promising applications in aerospace and chemical industries. Hydrogen leakage monitoring is very dangerous and important because of its low ignition energy, high combustion efficiency, and smallest molecule. This paper reviews the state-of-art development of the fiber optic hydrogen sensing technology. The main developing trends of fiber optic hydrogen sensors are based on two kinds of hydrogen sensitive materials, i.e. palladium-alloy thin films and Pt-doped WO3 coatings. In this review work, the advantages and disadvantages of these two kinds of sensing technologies will be evaluated.

MEMS Applications in Aerodynamic Measurement Technology

NASA Technical Reports Server (NTRS)

Reshotko, E.; Mehregany, M.; Bang, C.

1998-01-01

Microelectromechanical systems (MEMS) embodies the integration of sensors, actuators, and electronics on a single substrate using integrated circuit fabrication techniques and compatible bulk and surface micromachining processes. Silicon and its derivatives form the material base for the MEMS technology. MEMS devices, including microsensors and microactuators, are attractive because they can be made small (characteristic dimension about 100 microns), be produced in large numbers with uniform performance, include electronics for high performance and sophisticated functionality, and be inexpensive. For aerodynamic measurements, it is preferred that sensors be small so as to approximate measurement at a point, and in fact, MEMS pressure sensors, wall shear-stress sensors, heat flux sensors and micromachined hot wires are nearing application. For the envisioned application to wind tunnel models, MEMS sensors can be placed on the surface or in very shallow grooves. MEMS devices have often been fabricated on stiff, flat silicon substrates, about 0.5 mm thick, and therefore were not easily mounted on curved surfaces. However, flexible substrates are now available and heat-flux sensor arrays have been wrapped around a curved turbine blade. Electrical leads can also be built into the flexible substrate. Thus MEMS instrumented wind tunnel models do not require deep spanwise grooves for tubes and leads that compromise the strength of conventionally instrumented models. With MEMS, even the electrical leads can potentially be eliminated if telemetry of the signals to an appropriate receiver can be implemented. While semiconductor silicon is well known for its electronic properties, it is also an excellent mechanical material for MEMS applications. However, silicon electronics are limited to operations below about 200 C, and silicon's mechanical properties start to diminish above 400 C. In recent years, silicon carbide (SiC) has emerged as the leading material candidate for applications in high temperature environments and can be used for high-temperature MEMS applications. With SiC, diodes and more complex electronics have been shown to operate to about 600 C, while the mechanical properties of SiC are maintained to much higher temperatures. Even when MEMS devices show benefits in the laboratory, there are many packaging challenges for any aeronautics application. Incorporating MEMS into these applications requires new approaches to packaging that goes beyond traditional integrated circuit (IC) packaging technologies. MEMS must interact mechanically, as well as electrically with their environment, making most traditional chip packaging and mounting techniques inadequate. Wind tunnels operate over wide temperature ranges in an environment that is far from being a 'clean-room.' In flight, aircraft are exposed to natural elements (e.g. rain, sun, ice, insects and dirt) and operational interferences(e.g. cleaning and deicing fluids, and maintenance crews). In propulsion systems applications, MEMS devices will have to operate in environments containing gases with very high temperatures, abrasive particles and combustion products. Hence deployment and packaging that maintains the integrity of the MEMS system is crucial. This paper presents an overview of MEMS fabrication and materials, descriptions of available sensors with more details on those being developed in our laboratories, and a discussion of sensor deployment options for wind tunnel and flight applications.

Hydrogen sensors based on catalytic metals

NASA Astrophysics Data System (ADS)

Beklemyshev, V. I.; Berezine, V.; Bykov, Victor A.; Kiselev, L.; Makhonin, I.; Pevgov, V.; Pustovoy, V.; Semynov, A.; Sencov, Y.; Shkuropat, I.; Shokin, A.

1999-11-01

On the base of microelectronical and micromechanical technology were designed and developed converters of hydrogen concentration to electrical signals. The devices of controlling concentration of hydrogen in the air were developed. These devices were applied for ensuring fire and explosion security of complex technological teste of missile oxygen-hydrogen engine, developed for cryogenic accelerations block. The sensor block of such device was installed directly on the armor-plate, to which was attached tested engine.

InGaP/InGaAs field-effect transistor typed hydrogen sensor

NASA Astrophysics Data System (ADS)

Tsai, Jung-Hui; Liou, Syuan-Hao; Lin, Pao-Sheng; Chen, Yu-Chi

2018-02-01

In this article, the Pd-based mixture comprising silicon dioxide (SiO2) is applied as sensing material for the InGaP/InGaAs field-effect transistor typed hydrogen sensor. After wet selectively etching the SiO2, the mixture is turned into Pd nanoparticles on an interlayer. Experimental results depict that hydrogen atoms trapped inside the mixture could effectively decrease the gate barrier height and increase the drain current due to the improved sensing properties when Pd nanoparticles were formed by wet etching method. The sensitivity of the gate forward current from air (the reference) to 9800 ppm hydrogen/air environment approaches the high value of 1674. Thus, the studied device shows a good potential for hydrogen sensor and integrated circuit applications.

Microstructured FBG hydrogen sensor based on Pt-loaded WO₃.

PubMed

Zhou, Xian; Dai, Yutang; Karanja, Joseph Muna; Liu, Fufei; Yang, Minghong

2017-04-17

Hydrogen gas sensing properties of Pt-WO₃ films on spiral microstructured fiber Bragg grating (FBG) has been demonstrated. Pt-WO₃ film was prepared by hydrothermal method. The spiral microsturctured FBG was fabricated using femtosecond laser. Spiral microstructure FBG hydrogen sensor can detect hydrogen concentration from 0.02% H₂ to 4% H₂ at room temperature, and the response time is shortened from a few minutes to 10~30 s. Double spiral microstructure at pitch 60 μm and sputtered with 2 μm Pt-WO₃ film recorded hydrogen sensitivity of 522 pm/%(v/v) H₂ responding to hydrogen gas in air. This translated to approximately 2~4 times higher than the unprocessed standard FBG. The humidity has little effect on the sensing property. The sensor has fast response time, good stability, large detection range and has the good prospect of practical application for hydrogen leak detection.

Research on High Sensitive D-Shaped FBG Hydrogen Sensors in Power Transformer Oil

PubMed Central

Luo, Ying-Ting; Wang, Hong-Bin; Ma, Guo-Ming; Song, Hong-Tu; Li, Chengrong; Jiang, Jun

2016-01-01

Dissolved hydrogen is a symbol gas decomposed by power transformer oil for electrical faults such as overheat or partial discharges. A novel D-shaped fiber Bragg grating (D-FBG) sensor is herein proposed and was fabricated with magnetron sputtering to measure the dissolved hydrogen concentration in power transformer oil in this paper. Different from the RI (refractive index)-based effect, D-FBG in this case is sensitive to curvature caused by stress from sensing coating, leading to Bragg wavelength shifts accordingly. The relationship between the D-FBG wavelength shift and dissolved hydrogen concentration in oil was measured experimentally in the laboratory. The detected sensitivity could be as high as 1.96 μL/L at every 1-pm wavelength shift. The results proved that a simple, polished FBG-based hydrogen sensor provides a linear measuring characteristic in the range of low hydrogen concentrations in transformer oil. Moreover, the stable hydrogen sensing performance was investigated by X-ray diffraction analysis. PMID:27782034

Research on High Sensitive D-Shaped FBG Hydrogen Sensors in Power Transformer Oil.

PubMed

Luo, Ying-Ting; Wang, Hong-Bin; Ma, Guo-Ming; Song, Hong-Tu; Li, Chengrong; Jiang, Jun

2016-10-04

Dissolved hydrogen is a symbol gas decomposed by power transformer oil for electrical faults such as overheat or partial discharges. A novel D-shaped fiber Bragg grating (D-FBG) sensor is herein proposed and was fabricated with magnetron sputtering to measure the dissolved hydrogen concentration in power transformer oil in this paper. Different from the RI (refractive index)-based effect, D-FBG in this case is sensitive to curvature caused by stress from sensing coating, leading to Bragg wavelength shifts accordingly. The relationship between the D-FBG wavelength shift and dissolved hydrogen concentration in oil was measured experimentally in the laboratory. The detected sensitivity could be as high as 1.96 μL/L at every 1-pm wavelength shift. The results proved that a simple, polished FBG-based hydrogen sensor provides a linear measuring characteristic in the range of low hydrogen concentrations in transformer oil. Moreover, the stable hydrogen sensing performance was investigated by X-ray diffraction analysis.

Development and Performance of the Oxygen Sensor in the CSA-CP Aboard the International Space Station

NASA Technical Reports Server (NTRS)

Limero, Thomas; Beck, Steve; James, John T.

2004-01-01

A combustion products analyzer (CPA) was built for use on Shuttle in response to several thermodegradation incidents that had occurred during early flights. The CPA contained sensors that measured carbon monoxide, hydrogen chloride, hydrogen cyanide, and hydrogen fluoride. These marker compounds, monitored by the CPA, were selected based upon the likely products to be released in a spacecraft fire. When the Toxicology Laboratory group at Johnson Space Center (JSC) began to assess the air quality monitoring needs for the International Space Station (ISS), the CPA was the starting point for design of an instrument to monitor the atmosphere following a thermodegradation event. The final product was significantly different from the CPA and was named the compound specific analyzer-combustion products (CSA-CP). The major change from the CPA that will be the focus of this paper was the replacement of an unreliable hydrogen fluoride (HF) sensor with an oxygen sensor. A reliable HF sensor was not commercially available, but as the toxicology group reviewed the overall monitoring strategy for ISS, it appeared that a portable oxygen sensor to backup the major constituent analyzer was needed. Therefore, an oxygen sensor replaced the HF sensor in the new instrument. This paper will describe the development, deployment, and performance of the CSA-CP oxygen sensor on both Shuttle and ISS. Also, data for CSA-CP oxygen sensor accuracy at nominal and reduced pressures will be presented.

Wireless Capacitive Pressure Sensor Operating up to 400 Celcius from 0 to 100 psi Utilizing Power Scavenging

NASA Technical Reports Server (NTRS)

Scardelletti, Maximilian C.; Ponchak, George E.; Harsh, Kevin; Mackey, Jonathan A.; Meredith, Roger D.; Zorman, Christian A.; Beheim, Glenn M.; Dynys, Frederick W.; Hunter, Gary W.

2014-01-01

In this paper, a wireless capacitive pressure sensor developed for the health monitoring of aircraft engines has been demonstrated. The sensing system is composed of a Clapp-type oscillator that operates at 131 MHz. The Clapp oscillator is fabricated on a alumina substrate and consists of a Cree SiC (silicon carbide) MESFET (Metal Semiconductor Field Effect Transistors), this film inductor, Compex chip capacitors and Sporian Microsystem capacitive pressure sensor. The resonant tank circuit within the oscillator is made up of the pressure sensor and a spiral thin film inductor, which is used to magnetically couple the wireless pressure sensor signal to a coil antenna placed over 1 meter away. 75% of the power used to bias the sensing system is generated from thermoelectric power modules. The wireless pressure sensor is operational at room temperature through 400 C from 0 to 100 psi and exhibits a frequency shift of over 600 kHz.

Understanding Electrically Active Interface Formation on Wide Bandgap Semiconductors through Molecular Beam Epitaxy Using Fe3O 4 for Spintronics as a Base Case

NASA Astrophysics Data System (ADS)

Hamedani Golshan, Negar

Nanoelectronics, complex heterostructures, and engineered 3D matrix materials are quickly advancing from research possibilities to manufacturing challenges for applications ranging from high-power devices to solar cells to any number of novel multifunctional sensors and controllers. Formation of an abrupt and effective interface is one of the basic requirements for integration of functional materials on different types of semiconductors (from silicon to the wide bandgaps) which can significantly impact the functionality of nanoscale electronic devices. To realize the potential of next-generation electronics, the understanding and control of those initial stages of film layer formation must be understood and translated to a process that can control the initial stages of film deposition. Thin film Fe3O4 has attracted much attention as a material for exploring the potential of spintronics in next-generation information technologies. Synthesis of highly spin-polarized material as spin sources, in combination with wide bandgap semiconductors which have a long spin relaxation time in addition to functionality in high-temperature, high-power, and high-frequency environments, would enhance the performance of today's spintronic devices. Spinel ferrite Fe3O4 has a high Curie temperature of 858 K and it is predicted to possess half-metallic properties, i.e. 100% spin polarization at the Fermi level, which can lead to ultrahigh tunneling magnetoresistance at room temperature. However, these properties have been very difficult to realize in thin film form, and device design strategies require high-quality thin films of Fe3O4. The most common reason reported in literature for the failure of the films to achieve theoretical performance is that the growth techniques used today produce films with antiphase boundaries (APB). These APBs have a strong antiferromagnetic coupling that negatively impact the magnetic and transport properties of epitaxial Fe 3O4 films. Therefore, greater understanding of how to reduce APB density is of essential importance for applications of Fe3O4 films, and understanding the complex chemical and structural influences on the initial stages of film deposition is the key to eliminating APB density. This work used molecular beam epitaxy (MBE) to further understand the nucleation and growth mechanism needed to ensure single crystal film formation in a controlled orientation directly on a semiconductor (SiC) and then also on an insulating layer (MgO) that can not only align crystal structure but also provide an effective spin-aligned tunnel junction material. The starting substrate surface proved critical to effective integration, and the role of atomic hydrogen seems to be key in controlling the starting surface. We have investigated 1) the hydrogen furnace cleaning at 1600 °C of 6H-SiC (0001) substrates surfaces to produce a smooth, uniformly stepped surface and a √3x√3 R30° surface reconstruction with less than 10 at% residual oxygen contamination, 2) the atomic hydrogen cleaning of 6H-SiC (0001) substrates to produce a (1x1) surface structure with less than 7 at% residual oxygen contamination at relatively low temperature of 700 °C, 3) the atomic hydrogen cleaning of Ge (100) to produce smooth surface (RMS < 0.5 nm over a 1 mum2 area), and 4) the oxygen plasma cleaning of MgO (111) substrates. Each of these starting surfaces, in addition to single crystalline MgO (111) films deposited on SiC (0001) by MBE, produced different initial growth mechanisms for MgO and Fe3 O4. The highest quality single crystalline, epitaxial Fe 3O4 (111) films were deposited by MBE on the √3x√3 R30 surface reconstruction with less than 10 at% residual oxygen contamination 6H-SiC. The Fe3O4 film exhibits high structural order with sharp interfaces and an easy axis in-plane magnetization with a coercivity of 200 Oe. The MgO deposited by MBE on SiC prepared by the hydrogen furnace was found to have two-dimensional features that transitioned from 2D to 3D when the thickness exceeded 2nm; the structure changed from hexagonal

In situ measurement of gas composition changes in radio frequency plasmas using a quartz sensor

DOE Office of Scientific and Technical Information (OSTI.GOV)

Suzuki, Atsushi; Nonaka, Hidehiko

2009-09-15

A simple method using a quartz sensor (Q-sensor) was developed to observe gas composition changes in radio frequency (rf) plasmas. The output depends on the gases' absolute pressure, molecular weight, and viscosity. The pressure-normalized quartz sensor output depends only on the molecular weight and viscosity of the gas. Consequently, gas composition changes can be detected in the plasmas if a sensor can be used in the plasmas. Influences imparted by the plasmas on the sensor, such as those by reactive particles (e.g., radicals and ions), excited species, electrons, temperature, and electric potentials during measurements were investigated to test the applicabilitymore » of this quartz sensor measurement to plasma. The Q-sensor measurement results for rf plasmas with argon, hydrogen, and their mixtures are reproducible, demonstrating that the Q-sensor measurement is applicable for plasmas. In this work, pressure- and temperature-normalized Q-sensor output (NQO) were used to obtain the gas composition information of plasma. Temperature-normalization of the Q-sensor output enabled quartz sensor measurements near plasma electrodes, where the quartz sensor temperature increases. The changes in NQO agreed with results obtained by gas analysis using a quadrupole mass spectrometer. Results confirmed that the change in NQO is mainly attributable to changes in the densities and kinds of gas molecules in the plasma gas phase, not by other extrinsic influences of plasma. For argon, hydrogen, and argon-hydrogen plasmas, these changes correspond to reduction in nitrogen, production of carbon monoxide, and dissociation of hydrogen molecules, respectively. These changes in NQO qualitatively and somewhat quantitatively agreed with results obtained using gas analysis, indicting that the measurement has a potential application to obtain the gas composition in plasmas without disturbing industrial plasma processes.« less

A reflective hydrogen sensor based on fiber ring laser with PCF modal interferometer

NASA Astrophysics Data System (ADS)

Zhang, Ya-Nan; Zhang, Aozhuo; Han, Bo; E, Siyu

2018-06-01

A new hydrogen sensor based on a fiber ring laser with a photonic crystal fiber (PCF) modal interferometer is proposed. The reflective PCF modal interferometer, which is fabricated by forming two collapse regions on the two ends of PCF with a fusion discharge technique, is utilized as the sensing head and filter. Particularly, the Pd/WO3 hydrogen-sensitive thin film is coated on the PCF for hydrogen sensing. The combination of the fiber ring laser and PCF modal interferometer gives the sensor a high signal-to-noise ratio and an improved detection limit. Experimental results show that the sensing system can achieve a hydrogen sensitivity of 1.28 nm/%, a high signal-to-noise ratio (∼30 dB), a narrow full width at half maximum (∼0.05 nm), and low detection limit of 0.0133%.

Integrated High Payoff Rocket Propulsion Technology (IHPRPT) SiC Recession Model

NASA Technical Reports Server (NTRS)

Opila, E. J.

2009-01-01

SiC stability and recession rates were modeled in hydrogen/oxygen combustion environments for the Integrated High Payoff Rocket Propulsion Technology (IHPRPT) program. The IHPRPT program is a government and industry program to improve U.S. rocket propulsion systems. Within this program SiC-based ceramic matrix composites are being considered for transpiration cooled injector faceplates or rocket engine thrust chamber liners. Material testing under conditions representative of these environments was conducted at the NASA Glenn Research Center, Cell 22. For the study described herein, SiC degradation was modeled under these Cell 22 test conditions for comparison to actual test results: molar mixture ratio, MR (O2:H2) = 6, material temperatures to 1700 C, combustion gas pressures between 0.34 and 2.10 atm, and gas velocities between 8,000 and 12,000 fps. Recession was calculated assuming rates were controlled by volatility of thermally grown silica limited by gas boundary layer transport. Assumptions for use of this model were explored, including the presence of silica on the SiC surface, laminar gas boundary layer limited volatility, and accuracy of thermochemical data for volatile Si-O-H species. Recession rates were calculated as a function of temperature. It was found that at 1700 C, the highest temperature considered, the calculated recession rates were negligible, about 200 m/h, relative to the expected lifetime of the material. Results compared favorably to testing observations. Other mechanisms contributing to SiC recession are briefly described including consumption of underlying carbon and pitting. A simple expression for liquid flow on the material surface was developed from a one-dimensional treatment of the Navier-Stokes Equation. This relationship is useful to determine under which conditions glassy coatings or thermally grown silica would flow on the material surface, removing protective layers by shear forces. The velocity of liquid flow was found to depend on the gas velocity, the viscosity of gas and liquid, as well as the thickness of the gas boundary layer and the liquid layer. Calculated flow rates of a borosilicate glass coating compared well to flow rates observed for this coating tested on a SiC panel in Cell 22.

KSC-05PD-1584

NASA Technical Reports Server (NTRS)

2005-01-01

KENNEDY SPACE CENTER, FLA. Monica Hagley, an avionic test engineer, places a refurbished, spare orbiter point sensor chassis on the table. Faulty readings in the liquid hydrogen tank low-level fuel cut-off sensor are being investigated because one of the four sensors failed a routine prelaunch check during the launch countdown July 13, causing mission managers to scrub Discovery's first launch attempt. The sensor protects the Shuttle's main engines by triggering their shutdown in the event fuel runs unexpectedly low. The sensor is one of four inside the liquid hydrogen section of the External Tank (ET).

The Different Sensitive Behaviors of a Hydrogen-Bond Acidic Polymer-Coated SAW Sensor for Chemical Warfare Agents and Their Simulants

PubMed Central

Long, Yin; Wang, Yang; Du, Xiaosong; Cheng, Luhua; Wu, Penglin; Jiang, Yadong

2015-01-01

A linear hydrogen-bond acidic (HBA) linear functionalized polymer (PLF), was deposited onto a bare surface acoustic wave (SAW) device to fabricate a chemical sensor. Real-time responses of the sensor to a series of compounds including sarin (GB), dimethyl methylphosphonate (DMMP), mustard gas (HD), chloroethyl ethyl sulphide (2-CEES), 1,5-dichloropentane (DCP) and some organic solvents were studied. The results show that the sensor is highly sensitive to GB and DMMP, and has low sensitivity to HD and DCP, as expected. However, the sensor possesses an unexpected high sensitivity toward 2-CEES. This good sensing performance can’t be solely or mainly attributed to the dipole-dipole interaction since the sensor is not sensitive to some high polarity solvents. We believe the lone pair electrons around the sulphur atom of 2-CEES provide an electron-rich site, which facilitates the formation of hydrogen bonding between PLF and 2-CEES. On the contrary, the electron cloud on the sulphur atom of the HD molecule is offset or depleted by its two neighbouring strong electron-withdrawing groups, hence, hydrogen bonding can hardly be formed. PMID:26225975

Highly Sensitive and Selective Hydrogen Gas Sensor Using the Mesoporous SnO2 Modified Layers

PubMed Central

Xue, Niuzi; Zhang, Qinyi; Zhang, Shunping; Zong, Pan; Yang, Feng

2017-01-01

It is important to improve the sensitivities and selectivities of metal oxide semiconductor (MOS) gas sensors when they are used to monitor the state of hydrogen in aerospace industry and electronic field. In this paper, the ordered mesoporous SnO2 (m-SnO2) powders were prepared by sol-gel method, and the morphology and structure were characterized by X-ray diffraction analysis (XRD), transmission electron microscope (TEM) and Brunauer–Emmett–Teller (BET). The gas sensors were fabricated using m-SnO2 as the modified layers on the surface of commercial SnO2 (c-SnO2) by screen printing technology, and tested for gas sensing towards ethanol, benzene and hydrogen with operating temperatures ranging from 200 °C to 400 °C. Higher sensitivity was achieved by using the modified m-SnO2 layers on the c-SnO2 gas sensor, and it was found that the S(c/m2) sensor exhibited the highest response (Ra/Rg = 22.2) to 1000 ppm hydrogen at 400 °C. In this paper, the mechanism of the sensitivity and selectivity improvement of the gas sensors is also discussed. PMID:29036898

Electrical Impact of SiC Structural Crystal Defects on High Electric Field Devices

NASA Technical Reports Server (NTRS)

Neudeck, Philip G.

1999-01-01

Commercial epilayers are known to contain a variety of crystallographic imperfections. including micropipes, closed core screw dislocations. low-angle boundaries, basal plane dislocations, heteropolytypic inclusions, and non-ideal surface features like step bunching and pits. This paper reviews the limited present understanding of the operational impact of various crystal defects on SiC electrical devices. Aside from micropipes and triangular inclusions whose densities have been shrinking towards manageably small values in recent years, many of these defects appear to have little adverse operational and/or yield impact on SiC-based sensors, high-frequency RF, and signal conditioning electronics. However high-power switching devices used in power management and distribution circuits have historically (in silicon experience) demanded the highest material quality for prolonged safe operation, and are thus more susceptible to operational reliability problems that arise from electrical property nonuniformities likely to occur at extended crystal defects. A particular emphasis is placed on the impact of closed-core screw dislocations on high-power switching devices, because these difficult to observe defects are present in densities of thousands per cm,in commercial SiC epilayers. and their reduction to acceptable levels seems the most problematic at the present time.

Development of a Hydrogen Peroxide Sensor Based on Screen-Printed Electrodes Modified with Inkjet-Printed Prussian Blue Nanoparticles

PubMed Central

Cinti, Stefano; Arduini, Fabiana; Moscone, Danila; Palleschi, Giuseppe; Killard, Anthony J.

2014-01-01

A sensor for the simple and sensitive measurement of hydrogen peroxide has been developed which is based on screen printed electrodes (SPEs) modified with Prussian blue nanoparticles (PBNPs) deposited using piezoelectric inkjet printing. PBNP-modified SPEs were characterized using physical and electrochemical techniques to optimize the PBNP layer thickness and electroanalytical conditions for optimum measurement of hydrogen peroxide. Sensor optimization resulted in a limit of detection of 2 × 10−7 M, a linear range from 0 to 4.5 mM and a sensitivity of 762 μA·mM−1·cm−2 which was achieved using 20 layers of printed PBNPs. Sensors also demonstrated excellent reproducibility (<5% rsd). PMID:25093348

Development of chemiresponsive sensors for detection of common homemade explosives.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Brotherton, Christopher M.; Wheeler, David Roger

2012-05-01

Field-structured chemiresistors (FSCRs) are polymer based sensors that exhibit a resistance change when exposed to an analyte of interest. The amount of resistance change depends on the polymer-analyte affinity. The affinity can be manipulated by modifying the polymer within the FSCRs. In this paper, we investigate the ability of chemically modified FSCRs to sense hydrogen peroxide vapor. Five chemical species were chosen based on their hydrophobicity or reactivity with hydrogen peroxide. Of the five investigated, FSCRs modified with allyl methyl sulfide exhibited a significant response to hydrogen peroxide vapor. Additionally, these same FSCRs were evaluated against a common interferrant inmore » hydrogen peroxide detection, water vapor. For the conditions investigated, the FSCRs modified with allyl methyl sulfide were able to successfully distinguish between water vapor and hydrogen peroxide vapor. A portion of the results presented here will be submitted to the Sensors and Actuators journal.« less

Around Marshall

NASA Image and Video Library

1963-10-22

At its founding, the Marshall Space Flight Center (MSFC) inherited the Army’s Jupiter and Redstone test stands, but much larger facilities were needed for the giant stages of the Saturn V. From 1960 to 1964, the existing stands were remodeled and a sizable new test area was developed. The new comprehensive test complex for propulsion and structural dynamics was unique within the nation and the free world, and they remain so today because they were constructed with foresight to meet the future as well as on going needs. Construction of the S-IC Static test stand complex began in 1961 in the west test area of MSFC, and was completed in 1964. The S-IC static test stand was designed to develop and test the 138-ft long and 33-ft diameter Saturn V S-IC first stage, or booster stage, weighing in at 280,000 pounds. Required to hold down the brute force of a 7,500,000-pound thrust produced by 5 F-1 engines, the S-IC static test stand was designed and constructed with the strength of hundreds of tons of steel and 12,000,000 pounds of cement, planted down to bedrock 40 feet below ground level. The foundation walls, constructed with concrete and steel, are 4 feet thick. The base structure consists of four towers with 40-foot-thick walls extending upward 144 feet above ground level. The structure was topped by a crane with a 135-foot boom. With the boom in the upright position, the stand was given an overall height of 405 feet, placing it among the highest structures in Alabama at the time. This photo shows the progress of the S-IC test stand as of October 22, 1963. Spherical liquid hydrogen tanks can be seen to the left. Just to the lower front of those are the cylindrical liquid oxygen (LOX) tanks.

Around Marshall

NASA Image and Video Library

1963-09-05

At its founding, the Marshall Space Flight Center (MSFC) inherited the Army’s Jupiter and Redstone test stands, but much larger facilities were needed for the giant stages of the Saturn V. From 1960 to 1964, the existing stands were remodeled and a sizable new test area was developed. The new comprehensive test complex for propulsion and structural dynamics was unique within the nation and the free world, and they remain so today because they were constructed with foresight to meet the future as well as on going needs. Construction of the S-IC Static test stand complex began in 1961 in the west test area of MSFC, and was completed in 1964. The S-IC static test stand was designed to develop and test the 138-ft long and 33-ft diameter Saturn V S-IC first stage, or booster stage, weighing in at 280,000 pounds. Required to hold down the brute force of a 7,500,000-pound thrust produced by 5 F-1 engines, the S-IC static test stand was designed and constructed with the strength of hundreds of tons of steel and 12,000,000 pounds of cement, planted down to bedrock 40 feet below ground level. The foundation walls, constructed with concrete and steel, are 4 feet thick. The base structure consists of four towers with 40-foot-thick walls extending upward 144 feet above ground level. The structure was topped by a crane with a 135-foot boom. With the boom in the upright position, the stand was given an overall height of 405 feet, placing it among the highest structures in Alabama at the time. In addition to the stand itself, related facilities were constructed during this time. In the center portion of this photograph, taken September 5, 1963, the spherical hydrogen storage tanks are being constructed. One of the massive tower legs of the S-IC test stand is visible to the far right.

Hydrogen Leak Detection Sensor Database

NASA Technical Reports Server (NTRS)

Baker, Barton D.

2010-01-01

This slide presentation reviews the characteristics of the Hydrogen Sensor database. The database is the result of NASA's continuing interest in and improvement of its ability to detect and assess gas leaks in space applications. The database specifics and a snapshot of an entry in the database are reviewed. Attempts were made to determine the applicability of each of the 65 sensors for ground and/or vehicle use.

Investigation of the sensitivity of MIS-sensor to thermal decomposition products of cables insulation

NASA Astrophysics Data System (ADS)

Filipchuk, D. V.; Litvinov, A. V.; Etrekova, M. O.; Nozdrya, D. A.

2017-12-01

Sensitivity of the MIS-sensor to products of thermal decomposition of insulation and jacket of the most common types of cables is investigated. It is shown that hydrogen is evolved under heating the insulation to temperatures not exceeding 250 °C. Registration of the evolved hydrogen by the MIS-sensor can be used for detection of fires at an early stage.

Towards radiation hard converter material for SiC-based fast neutron detectors

NASA Astrophysics Data System (ADS)

Tripathi, S.; Upadhyay, C.; Nagaraj, C. P.; Venkatesan, A.; Devan, K.

2018-05-01

In the present work, Geant4 Monte-Carlo simulations have been carried out to study the neutron detection efficiency of the various neutron to other charge particle (recoil proton) converter materials. The converter material is placed over Silicon Carbide (SiC) in Fast Neutron detectors (FNDs) to achieve higher neutron detection efficiency as compared to bare SiC FNDs. Hydrogenous converter material such as High-Density Polyethylene (HDPE) is preferred over other converter materials due to the virtue of its high elastic scattering reaction cross-section for fast neutron detection at room temperature. Upon interaction with fast neutrons, hydrogenous converter material generates recoil protons which liberate e-hole pairs in the active region of SiC detector to provide a detector signal. The neutron detection efficiency offered by HDPE converter is compared with several other hydrogenous materials viz., 1) Lithium Hydride (LiH), 2) Perylene, 3) PTCDA . It is found that, HDPE, though providing highest efficiency among various studied materials, cannot withstand high temperature and harsh radiation environment. On the other hand, perylene and PTCDA can sustain harsh environments, but yields low efficiency. The analysis carried out reveals that LiH is a better material for neutron to other charge particle conversion with competent efficiency and desired radiation hardness. Further, the thickness of LiH has also been optimized for various mono-energetic neutron beams and Am-Be neutron source generating a neutron fluence of 109 neutrons/cm2. The optimized thickness of LiH converter for fast neutron detection is found to be ~ 500 μm. However, the estimated efficiency for fast neutron detection is only 0.1%, which is deemed to be inadequate for reliable detection of neutrons. A sensitivity study has also been done investigating the gamma background effect on the neutron detection efficiency for various energy threshold of Low-Level Discriminator (LLD). The detection efficiency of a stacked structure concept has been explored by juxtaposing several converter-detector layers to improve the efficiency of LiH-SiC-based FNDs . It is observed that approximately tenfold efficiency improvement has been achieved—0.93% for ten layers stacked configuration vis-à-vis 0.1% of single converter-detector layer configuration. Finally, stacked detectors have also been simulated for different converter thicknesses to attain the efficiency as high as ~ 3.25% with the help of 50 stacked layers.

Development of a metal-based composite actuator

NASA Astrophysics Data System (ADS)

Asanuma, Hiroshi; Haga, Osamu; Ishii, Toshio; Kurihara, Haruki; Ohira, Junichiro; Hakoda, Genji

2000-06-01

This paper describes a basic concept and elemental developments to realize a metal based composite actuator to be used for smart structures. In this study, CFRP prepreg was laminated on aluminum plate to develop an actuator and this laminate could perform unidirectional actuation. SiC continuous fiber/Al composite thin plate could also be used for form a modified type of actuator instead of using CFRP. As sensors to be embedded in this actuator, the following ones wee developed. (1) A pre-notched optical fiber filament could be embedded in aluminum matrix without fracture by the interphase forming/bonding method with copper insert and could be fractured in it at the notch, which enabled forming of an optical interference type strain sensor. (2) Nickel wire could be uniformly oxidized and embedded in aluminum matrix without fracture, which could successfully work as a temperature sensor and a strain sensor.

Flashback Detection Sensor for Hydrogen Augmented Natural Gas Combustion

DOE Office of Scientific and Technical Information (OSTI.GOV)

Thornton, J.D.; Chorpening, B.T.; Sidwell, T.

2007-05-01

The use of hydrogen augmented fuel is being investigated by various researchers as a method to extend the lean operating limit, and potentially reduce thermal NOx formation in natural gas fired lean premixed (LPM) combustion systems. The resulting increase in flame speed during hydrogen augmentation, however, increases the propensity for flashback in LPM systems. Real-time in-situ monitoring of flashback is important for the development of control strategies for use of hydrogen augmented fuel in state-of-the-art combustion systems, and for the development of advanced hydrogen combustion systems. The National Energy Technology Laboratory (NETL) and Woodward Industrial Controls are developing a combustionmore » control and diagnostics sensor (CCADS), which has already been demonstrated as a useful sensor for in-situ monitoring of natural gas combustion, including detection of important combustion events such as flashback and lean blowoff. Since CCADS is a flame ionization sensor technique, the low ion concentration produced in pure hydrogen combustion raises concerns of whether CCADS can be used to monitor flashback in hydrogen augmented combustion. This paper discusses CCADS tests conducted at 0.2-0.6 MPa (2-6 atm), demonstrating flashback detection with fuel compositions up to 80% hydrogen (by volume) mixed with natural gas. NETL’s Simulation Validation (SimVal) combustor offers full optical access to pressurized combustion during these tests. The CCADS data and high-speed video show the reaction zone moves upstream into the nozzle as the hydrogen fuel concentration increases, as is expected with the increased flame speed of the mixture. The CCADS data and video also demonstrate the opportunity for using CCADS to provide the necessary in-situ monitor to control flashback and lean blowoff in hydrogen augmented combustion applications.« less

Low temperature deposition of nanocrystalline silicon carbide films by plasma enhanced chemical vapor deposition and their structural and optical characterization

NASA Astrophysics Data System (ADS)

Rajagopalan, T.; Wang, X.; Lahlouh, B.; Ramkumar, C.; Dutta, Partha; Gangopadhyay, S.

2003-10-01

Nanocrystalline silicon carbide (SiC) thin films were deposited by plasma enhanced chemical vapor deposition technique at different deposition temperatures (Td) ranging from 80 to 575 °C and different gas flow ratios (GFRs). While diethylsilane was used as the source for the preparation of SiC films, hydrogen, argon and helium were used as dilution gases in different concentrations. The effects of Td, GFR and dilution gases on the structural and optical properties of these films were investigated using high resolution transmission electron microscope (HRTEM), micro-Raman, Fourier transform infrared (FTIR) and ultraviolet-visible optical absorption techniques. Detailed analysis of the FTIR spectra indicates the onset of formation of SiC nanocrystals embedded in the amorphous matrix of the films deposited at a temperature of 300 °C. The degree of crystallization increases with increasing Td and the crystalline fraction (fc) is 65%±2.2% at 575 °C. The fc is the highest for the films deposited with hydrogen dilution in comparison with the films deposited with argon and helium at the same Td. The Raman spectra also confirm the occurrence of crystallization in these films. The HRTEM measurements confirm the existence of nanocrystallites in the amorphous matrix with a wide variation in the crystallite size from 2 to 10 nm. These results are in reasonable agreement with the FTIR and the micro-Raman analysis. The variation of refractive index (n) with Td is found to be quite consistent with the structural evolution of these films. The films deposited with high dilution of H2 have large band gap (Eg) and these values vary from 2.6 to 4.47 eV as Td is increased from 80 to 575 °C. The size dependent shift in the Eg value has also been investigated using effective mass approximation. Thus, the observed large band gap is attributed to the presence of nanocrystallites in the films.

A fiber-optic sensor for accurately monitoring biofilm growth in a hydrogen production photobioreactor.

PubMed

Zhong, Nianbing; Liao, Qiang; Zhu, Xun; Chen, Rong

2014-04-15

A new simple fiber-optic evanescent wave sensor was created to accurately monitor the growth and hydrogen production performance of biofilms. The proposed sensor consists of two probes (i.e., a sensor and reference probe), using the etched fibers with an appropriate surface roughness to improve its sensitivity. The sensor probe measures the biofilm growth and change of liquid-phase concentration inside the biofilm. The reference probe is coated with a hydrophilic polytetrafluoroethylene membrane to separate the liquids from photosynthetic bacteria Rhodopseudomonas palustris CQK 01 and to measure the liquid concentration. We also developed a model to demonstrate the accuracy of the measurement. The biofilm measurement was calibrated using an Olympus microscope. A linear relationship was obtained for the biofilm thickness range from 0 to 120 μm with a synthetic medium under continuous supply to the bioreactor. The highest level of hydrogen production rate occurred at a thickness of 115 μm.

KSC-05PD-1585

NASA Technical Reports Server (NTRS)

2005-01-01

KENNEDY SPACE CENTER, FLA. On the table is a mother board with electronic components that could be used in a spare orbiter point sensor chassis. Faulty readings in the liquid hydrogen tank low- level fuel cut-off sensor are being investigated because one of the four sensors failed a routine prelaunch check during the launch countdown July 13, causing mission managers to scrub Discovery's first launch attempt. The sensor protects the Shuttle's main engines by triggering their shutdown in the event fuel runs unexpectedly low. The sensor is one of four inside the liquid hydrogen section of the External Tank (ET).

Novel High Temperature Capacitive Pressure Sensor Utilizing SiC Integrated Circuit Twin Ring Oscillators

NASA Technical Reports Server (NTRS)

Scardelletti, M.; Neudeck, P.; Spry, D.; Meredith, R.; Jordan, J.; Prokop, N.; Krasowski, M.; Beheim, G.; Hunter, G.

2017-01-01

This paper describes initial development and testing of a novel high temperature capacitive pressure sensor system. The pressure sensor system consists of two 4H-SiC 11-stage ring oscillators and a SiCN capacitive pressure sensor. One oscillator has the capacitive pressure sensor fixed at one node in its feedback loop and varies as a function of pressure and temperature while the other provides a pressure-independent reference frequency which can be used to temperature compensate the output of the first oscillator. A two-day repeatability test was performed up to 500C on the oscillators and the oscillator fundamental frequency changed by only 1. The SiCN capacitive pressure sensor was characterized at room temperature from 0 to 300 psi. The sensor had an initial capacitance of 3.76 pF at 0 psi and 1.75 pF at 300 psi corresponding to a 54 change in capacitance. The integrated pressure sensor system was characterized from 0 to 300 psi in steps of 50 psi over a temperature range of 25 to 500C. The pressure sensor system sensitivity was 0.113 kHzpsi at 25C and 0.026 kHzpsi at 500C.

Structural Consequences of Hydrogen Intercalation of Epitaxial Graphene on SiC(0001)

DTIC Science & Technology

2014-10-23

in barrier height at the graphene –silicon carbide Schottky junction,” Nat. Commun. 4, 2752 (2013). 31H. Yang, J. Heo, S. Park, H. J. Song, D. H. Seo, K...displacement. The shift of the Dirac point defines the Schottky barrier height and will determine the practicality of employing the wide-bandgap...are thought to critically influence technologi- cally relevant properties such as Dirac point shift and Schottky barrier height . Furthermore, this

Material Analysis of Coated Siliconized Silicon Carbide (SiSiC) Honeycomb Structures for Thermochemical Hydrogen Production

PubMed Central

Neises-von Puttkamer, Martina; Simon, Heike; Schmücker, Martin; Roeb, Martin; Sattler, Christian; Pitz-Paal, Robert

2013-01-01

In the present work, thermochemical water splitting with siliconized silicon carbide (SiSiC) honeycombs coated with a zinc ferrite redox material was investigated. The small scale coated monoliths were tested in a laboratory test-rig and characterized by X-ray diffractometry (XRD) and Scanning Electron Microscopy (SEM) with corresponding micro analysis after testing in order to characterize the changes in morphology and composition. Comparison of several treated monoliths revealed the formation of various reaction products such as SiO2, zircon (ZrSiO4), iron silicide (FeSi) and hercynite (FeAl2O4) indicating the occurrence of various side reactions between the different phases of the coating as well as between the coating and the SiSiC substrate. The investigations showed that the ferrite is mainly reduced through reaction with silicon (Si), which is present in the SiSiC matrix, and silicon carbide (SiC). These results led to the formulation of a new redox mechanism for this system in which Zn-ferrite is reduced through Si forming silicon dioxide (SiO2) and through SiC forming SiO2 and carbon monoxide. A decline of hydrogen production within the first 20 cycles is suggested to be due to the growth of a silicon dioxide and zircon layer which acts as a diffusion barrier for the reacting specie. PMID:28809316

Material Analysis of Coated Siliconized Silicon Carbide (SiSiC) Honeycomb Structures for Thermochemical Hydrogen Production.

PubMed

Neises-von Puttkamer, Martina; Simon, Heike; Schmücker, Martin; Roeb, Martin; Sattler, Christian; Pitz-Paal, Robert

2013-01-31

In the present work, thermochemical water splitting with siliconized silicon carbide (SiSiC) honeycombs coated with a zinc ferrite redox material was investigated. The small scale coated monoliths were tested in a laboratory test-rig and characterized by X-ray diffractometry (XRD) and Scanning Electron Microscopy (SEM) with corresponding micro analysis after testing in order to characterize the changes in morphology and composition. Comparison of several treated monoliths revealed the formation of various reaction products such as SiO₂, zircon (ZrSiO₄), iron silicide (FeSi) and hercynite (FeAl₂O₄) indicating the occurrence of various side reactions between the different phases of the coating as well as between the coating and the SiSiC substrate. The investigations showed that the ferrite is mainly reduced through reaction with silicon (Si), which is present in the SiSiC matrix, and silicon carbide (SiC). These results led to the formulation of a new redox mechanism for this system in which Zn-ferrite is reduced through Si forming silicon dioxide (SiO₂) and through SiC forming SiO₂ and carbon monoxide. A decline of hydrogen production within the first 20 cycles is suggested to be due to the growth of a silicon dioxide and zircon layer which acts as a diffusion barrier for the reacting specie.

Packaged Capacitive Pressure Sensor System for Aircraft Engine Health Monitoring

NASA Technical Reports Server (NTRS)

Scardelletti, Maximilian C.; Zorman, Christian A.

2016-01-01

This paper describes the development of a packaged silicon carbide (SiC) based MEMS pressure sensor system designed specifically for a conventional turbofan engine. The electronic circuit is based on a Clapp-type oscillator that incorporates a 6H-SiC MESFET, a SiCN MEMS capacitive pressure sensor, titanate MIM capacitors, wirewound inductors, and thick film resistors. The pressure sensor serves as the capacitor in the LC tank circuit, thereby linking pressure to the resonant frequency of the oscillator. The oscillator and DC bias circuitry were fabricated on an alumina substrate and secured inside a metal housing. The packaged sensing system reliably operates at 0 to 350 psi and 25 to 540C. The system has a pressure sensitivity of 6.8 x 10E-2 MHzpsi. The packaged system shows negligible difference in frequency response between 25 and 400C. The fully packaged sensor passed standard benchtop acceptance tests and was evaluated on a flight-worthy engine.

Temperature Dependence of Diffusion and Reaction at a Pd/SiC Contact

NASA Technical Reports Server (NTRS)

Shi, D.T.; Lu, W. J.; Bryant, E.; Elshot, K.; Lafate, K.; Chen, H.; Burger, A.; Collins, W. E.

1998-01-01

Schottky diodes of Palladium/SiC are good candidates for hydrogen and hydrocarbon gas sensors at elevated temperature. The detection sensibility of the diodes has been found heavily temperature dependent. In this work, emphasis has been put on the understanding of changes of physical and chemical properties of the Schottky diodes with variation of temperature. Schottky diodes were made by depositing ultra-thin palladium films onto silicon carbide substrates. The electrical and chemical properties of Pd/SiC Schottky contacts were studied by XPS and AES at different annealing temperatures. No significant change in the Schottky barrier height of the Pd/SiC contact was found in the temperature range of RT-400 C. However, both palladium diffused into SiC and silicon migrated into palladium thin film as well as onto surface were observed at room temperature. The formation of palladium compounds at the Pd/SiC interface was also observed. Both diffusion and reaction at the Pd/SiC interface became significant at 300 C and higher temperature. In addition, silicon oxide was found also at the interface of the Pd/SiC contact at high temperature. In this report, the mechanism of diffusion and reaction at the Pd/SiC interface will be discussed along with experimental approaches.

Atomically Flat Surfaces Developed for Improved Semiconductor Devices

NASA Technical Reports Server (NTRS)

Powell, J. Anthony

2001-01-01

New wide bandgap semiconductor materials are being developed to meet the diverse high temperature, -power, and -frequency demands of the aerospace industry. Two of the most promising emerging materials are silicon carbide (SiC) for high-temperature and high power applications and gallium nitride (GaN) for high-frequency and optical (blue-light-emitting diodes and lasers) applications. This past year Glenn scientists implemented a NASA-patented crystal growth process for producing arrays of device-size mesas whose tops are atomically flat (i.e., step-free). It is expected that these mesas can be used for fabricating SiC and GaN devices with major improvements in performance and lifetime. The promising new SiC and GaN devices are fabricated in thin-crystal films (known as epi films) that are grown on commercial single-crystal SiC wafers. At this time, no commercial GaN wafers exist. Crystal defects, known as screw defects and micropipes, that are present in the commercial SiC wafers propagate into the epi films and degrade the performance and lifetime of subsequently fabricated devices. The new technology isolates the screw defects in a small percentage of small device-size mesas on the surface of commercial SiC wafers. This enables atomically flat surfaces to be grown on the remaining defect-free mesas. We believe that the atomically flat mesas can also be used to grow GaN epi films with a much lower defect density than in the GaN epi films currently being grown. Much improved devices are expected from these improved low-defect epi films. Surface-sensitive SiC devices such as Schottky diodes and field effect transistors should benefit from atomically flat substrates. Also, we believe that the atomically flat SiC surface will be an ideal surface on which to fabricate nanoscale sensors and devices. The process for achieving atomically flat surfaces is illustrated. The surface steps present on the "as-received" commercial SiC wafer is also illustrated. because of the small tilt angle between the crystal "basal" plane and the polished wafer surface. These steps are used in normal SiC epi film growth in a process known as stepflow growth to produce material for device fabrication. In the new process, the first step is to etch an array of mesas on the SiC wafer top surface. Then, epi film growth is carried out in the step flow fashion until all steps have grown themselves out of existence on each defect-free mesa. If the size of the mesas is sufficiently small (about 0.1 by 0.1 mm), then only a small percentage of the mesas will contain an undesired screw defect. Mesas with screw defects supply steps during the growth process, allowing a rough surface with unwanted hillocks to form on the mesa. The improvement in SiC epi surface morphology achievable with the new technology is shown. An atomic force microscope image of a typical SiC commercial epilayer surface is also shown. A similar image of an SiC atomically flat epi surface grown in a Glenn laboratory is given. With the current screw defect density of commercial wafers (about 5000 defects/cm2), the yield of atomically free 0.1 by 0.l mm mesas is expected to be about 90 percent. This is large enough for many types of electronic and optical devices. The implementation of this new technology was recently published in Applied Physics Letters. This work was initially carried out in-house under a Director's Discretionary Fund project and is currently being further developed under the Information Technology Base Program.

A Combustion Products Analyzer for contingency use during thermodegradation events on spacecraft

NASA Technical Reports Server (NTRS)

Limero, Thomas; James, John T.; Beck, Steven; Cromer, Raymond

1991-01-01

This paper will describe the Combustion Products Analyzer (CPA), which is being developed under the direction of the Toxicology Laboratory at Johnson Space Center to provide necessary data on air quality in the Shuttle following a thermodegradation incident. Using separate electrochemical sensors, the CPA monitors four gases (hydrogen fluoride/carbonyl fluoride, hydrogen chloride, hydrogen cyanide, and carbon monoxide), which were selected as the most hazardous compounds likely to be released during thermodegradation of synthetic materials. Electrochemical sensors have been available for several years; the CPA sensors, which are unique because of their small size and zero-gravity compatibility, will be described in detail.

Packaging Technology Designed, Fabricated, and Assembled for High-Temperature SiC Microsystems

NASA Technical Reports Server (NTRS)

Chen, Liang-Yu

2003-01-01

A series of ceramic substrates and thick-film metalization-based prototype microsystem packages designed for silicon carbide (SiC) high-temperature microsystems have been developed for operation in 500 C harsh environments. These prototype packages were designed, fabricated, and assembled at the NASA Glenn Research Center. Both the electrical interconnection system and the die-attach scheme for this packaging system have been tested extensively at high temperatures. Printed circuit boards used to interconnect these chip-level packages and passive components also are being fabricated and tested. NASA space and aeronautical missions need harsh-environment, especially high-temperature, operable microsystems for probing the inner solar planets and for in situ monitoring and control of next-generation aeronautical engines. Various SiC high-temperature-operable microelectromechanical system (MEMS) sensors, actuators, and electronics have been demonstrated at temperatures as high as 600 C, but most of these devices were demonstrated only in the laboratory environment partially because systematic packaging technology for supporting these devices at temperatures of 500 C and beyond was not available. Thus, the development of a systematic high-temperature packaging technology is essential for both in situ testing and the commercialization of high-temperature SiC MEMS. Researchers at Glenn developed new prototype packages for high-temperature microsystems using ceramic substrates (aluminum nitride and 96- and 90-wt% aluminum oxides) and gold (Au) thick-film metalization. Packaging components, which include a thick-film metalization-based wirebond interconnection system and a low-electrical-resistance SiC die-attachment scheme, have been tested at temperatures up to 500 C. The interconnection system composed of Au thick-film printed wire and 1-mil Au wire bond was tested in 500 C oxidizing air with and without 50-mA direct current for over 5000 hr. The Au thick-film metalization-based wirebond electrical interconnection system was also tested in an extremely dynamic thermal environment to assess thermal reliability. The I-V curve1 of a SiC high-temperature diode was measured in oxidizing air at 500 C for 1000 hr to electrically test the Au thick-film material-based die-attach assembly.

SiC Optically Modulated Field-Effect Transistor

NASA Technical Reports Server (NTRS)

Tabib-Azar, Massood

2009-01-01

An optically modulated field-effect transistor (OFET) based on a silicon carbide junction field-effect transistor (JFET) is under study as, potentially, a prototype of devices that could be useful for detecting ultraviolet light. The SiC OFET is an experimental device that is one of several devices, including commercial and experimental photodiodes, that were initially evaluated as detectors of ultraviolet light from combustion and that could be incorporated into SiC integrated circuits to be designed to function as combustion sensors. The ultraviolet-detection sensitivity of the photodiodes was found to be less than desired, such that it would be necessary to process their outputs using high-gain amplification circuitry. On the other hand, in principle, the function of the OFET could be characterized as a combination of detection and amplification. In effect, its sensitivity could be considerably greater than that of a photodiode, such that the need for amplification external to the photodetector could be reduced or eliminated. The experimental SiC OFET was made by processes similar to JFET-fabrication processes developed at Glenn Research Center. The gate of the OFET is very long, wide, and thin, relative to the gates of typical prior SiC JFETs. Unlike in prior SiC FETs, the gate is almost completely transparent to near-ultraviolet and visible light. More specifically: The OFET includes a p+ gate layer less than 1/4 m thick, through which photons can be transported efficiently to the p+/p body interface. The gate is relatively long and wide (about 0.5 by 0.5 mm), such that holes generated at the body interface form a depletion layer that modulates the conductivity of the channel between the drain and the source. The exact physical mechanism of modulation of conductivity is a subject of continuing research. It is known that injection of minority charge carriers (in this case, holes) at the interface exerts a strong effect on the channel, resulting in amplification of the photon-detection signal. A family of operating curves characterizing the OFET can be generated in a series of measurements performed at different intensities of incident ultraviolet light.

Characteristics of Hydrogen Sensors Based on Thin Tin Dioxide Films Modified with Gold

NASA Astrophysics Data System (ADS)

Almaev, A. V.; Gaman, V. I.

2017-11-01

Effect of hydrogen in the concentration range from 10 to 2000 ppm on the characteristics of sensors based on thin films of tin dioxide modified with gold (Au/SnO2:Sb, Au) is studied in the thermo-cyclic mode at temperatures from 623 to 773 K and absolute humidity from 2.5 to 20 g/m3. Experimental data are discussed using expressions obtained within the framework of a model that takes into account the presence of three types of adsorbed particles (O¯, OH, and OH¯) on the surface of SnO2 nanocrystals. The characteristics of the sensors based on thin Pt/Pd/SnO2:Sb films (the first series) are compared with those of Au/SnO2:Sb, Au films (the second series). It is found that the degree of dissociation of molecular hydrogen into atoms during adsorption on the sensor under interaction with Au particles on the SnO2 surface is 4 times greater than that under interaction with Pt/Pd particles. The degree of dissociation of H2O molecules into hydrogen atoms and hydroxyl groups in pure moist air on the surface of the sensors of the second series is 1.6 times greater than that for the sensors of the first series. Thus, gold is a more effective stimulator of the dissociation of H2 and H2O molecules than platinum and palladium. A formula is obtained that describes more accurately the dependence of the response of the sensors of both series to the effect of hydrogen on the concentration of this gas and on the temperature of the measuring devices.

Gas Sensor Evaluations in Polymer Combustion Product Atmospheres

NASA Technical Reports Server (NTRS)

Delgado, Rafael H.; Davis, Dennis D.; Beeson, Harold D.

1999-01-01

Toxic gases produced by the combustion or thermo-oxidative degradation of materials such as wire insulation, foam, plastics, or electronic circuit boards in space shuttle or space station crew cabins may pose a significant hazard to the flight crew. Toxic gas sensors are routinely evaluated in pure gas standard mixtures, but the possible interferences from polymer combustion products are not routinely evaluated. The NASA White Sands Test Facility (WSTF) has developed a test system that provides atmospheres containing predetermined quantities of target gases combined with the coincidental combustion products of common spacecraft materials. The target gases are quantitated in real time by infrared (IR) spectroscopy and verified by grab samples. The sensor responses are recorded in real time and are compared to the IR and validation analyses. Target gases such as carbon monoxide, hydrogen cyanide, hydrogen chloride, and hydrogen fluoride can be generated by the combustion of poly(vinyl chloride), polyimide-fluoropolymer wire insulation, polyurethane foam, or electronic circuit board materials. The kinetics and product identifications for the combustion of the various materials were determined by thermogravimetric-IR spectroscopic studies. These data were then scaled to provide the required levels of target gases in the sensor evaluation system. Multisensor toxic gas monitors from two manufacturers were evaluated using this system. In general, the sensor responses satisfactorily tracked the real-time concentrations of toxic gases in a dynamic mixture. Interferences from a number of organic combustion products including acetaldehyde and bisphenol-A were minimal. Hydrogen bromide in the products of circuit board combustion registered as hydrogen chloride. The use of actual polymer combustion atmospheres for the evaluation of sensors can provide additional confidence in the reliability of the sensor response.

Color Changing Material for Hydrogen Leak Detection

NASA Technical Reports Server (NTRS)

Victor, Megan E.

2014-01-01

Kennedy Space Center scientists developed a hydrogen leak sensor utilizing a combination of chemochromic pigment and polymer that can be molded or fiber spun into rigid or flexible shapes such as tape. The sensor turns a dark color when exposed to hydrogen gas. This sensor has proven to be very effective for pinpointing the exact location of leaks in hydrogen gas lines and fittings at launch pads. Kennedy Space Center exclusively licensed this technology to the University of Central Florida (UCF), who also holds patents that are complimentary to KSC's. UCF has bundled the patents and exclusively licensed the portfolio to HySense Technology LLC, a startup company founded by a UCF professor who supports the UCF Florida Solar Energy Center (FSEC). HySense has fully developed its product (known as Intellipigment"TM"), and currently has five commercial customers. The company recently won the $100,000 first-place award at the CAT5 innovation competition at the Innovation Concourse of the Southeast: Safety & Manufacturing event in Orlando, FL. Commercial production and sales of this technology by HySense Technology will make this leak sensor widely available for use by NASA, DoD, and industries that utilize hydrogen gas.

Erbium-doped fiber ring laser with SMS modal interferometer for hydrogen sensing

NASA Astrophysics Data System (ADS)

Zhang, Ya-nan; Zhang, Lebin; Han, Bo; Peng, Huijie; Zhou, Tianmin; Lv, Ri-qing

2018-06-01

A hydrogen sensor based on erbium-doped fiber ring laser with modal interferometer is proposed. A single mode-multimode-single mode (SMS) modal interferometer structure coated with Pd/WO3 film is used as the sensing head, due to that it is easy to be fabricated and low cost. The sensing structure is inserted into an erbium-doped fiber ring laser in order to solve the problem of spectral confusion and improve the detection limit of the hydrogen sensor based on the SMS modal interferometer. The SMS sensing structure is acted as a fiber band-pass filter. When hydrogen concentration around the sensor is changed, it will induce the refractive index and strain variations of the Pd/WO3 film, and then shift the resonant spectrum of the SMS modal interferometer as well as the laser wavelength of the fiber ring laser. Therefore, the hydrogen concentration can be measured by monitoring the wavelength shift of the laser, which has high intensity and narrow full width half maximum. Experimental results demonstrate that the sensor has high sensitivity of 1.23 nm/%, low detection limit of 0.017%, good stability and excellent repeatability.

SiC nanoparticles-modified glassy carbon electrodes for simultaneous determination of purine and pyrimidine DNA bases.

PubMed

Ghavami, Raouf; Salimi, Abdollah; Navaee, Aso

2011-05-15

For the first time a novel and simple electrochemical method was used for simultaneous detection of DNA bases (guanine, adenine, thymine and cytosine) without any pretreatment or separation process. Glassy carbon electrode modified with silicon carbide nanoparticles (SiCNP/GC), have been used for electrocatalytic oxidation of purine (guanine and adenine) and pyrimidine bases (thymine and cytosine) nucleotides. Field emission scanning electron microscopy (FE-SEM) and transmission electron microscopy (TEM) techniques were used to examine the structure of the SiCNP/GC modified electrode. The modified electrode shows excellent electrocatalytic activity toward guanine, adenine, thymine and cytosine. Differential pulse voltammetry (DPV) was proposed for simultaneous determination of four DNA bases. The effects of different parameters such as the thickness of SiC layer, pulse amplitude, scan rate, supporting electrolyte composition and pH were optimized to obtain the best peak potential separation and higher sensitivity. Detection limit, sensitivity and linear concentration range of the modified electrode toward proposed analytes were calculated for, guanine, adenine, thymine and cytosine, respectively. As shown this sensor can be used for nanomolar or micromolar detection of different DNA bases simultaneously or individually. This sensor also exhibits good stability, reproducibility and long lifetime. Copyright © 2011 Elsevier B.V. All rights reserved.

Fast detection and low power hydrogen sensor using edge-oriented vertically aligned 3-D network of MoS2 flakes at room temperature

NASA Astrophysics Data System (ADS)

Agrawal, A. V.; Kumar, R.; Venkatesan, S.; Zakhidov, A.; Zhu, Z.; Bao, Jiming; Kumar, Mahesh; Kumar, Mukesh

2017-08-01

The increased usage of hydrogen as a next generation clean fuel strongly demands the parallel development of room temperature and low power hydrogen sensors for their safety operation. In this work, we report strong evidence for preferential hydrogen adsorption at edge-sites in an edge oriented vertically aligned 3-D network of MoS2 flakes at room temperature. The vertically aligned edge-oriented MoS2 flakes were synthesised by a modified CVD process on a SiO2/Si substrate and confirmed by Scanning Electron Microscopy. Raman spectroscopy and PL spectroscopy reveal the signature of few-layer MoS2 flakes in the sample. The sensor's performance was tested from room temperature to 150 °C for 1% hydrogen concentration. The device shows a fast response of 14.3 s even at room temperature. The sensitivity of the device strongly depends on temperature and increases from ˜1% to ˜11% as temperature increases. A detail hydrogen sensing mechanism was proposed based on the preferential hydrogen adsorption at MoS2 edge sites. The proposed gas sensing mechanism was verified by depositing ˜2-3 nm of ZnO on top of the MoS2 flakes that partially passivated the edge sites. We found a decrease in the relative response of MoS2-ZnO hybrid structures. This study provides a strong experimental evidence for the role of MoS2 edge-sites in the fast hydrogen sensing and a step closer towards room temperature, low power (0.3 mW), hydrogen sensor development.

KSC-05PD-1586

NASA Technical Reports Server (NTRS)

2005-01-01

KENNEDY SPACE CENTER, FLA. On the table is a refurbished, spare orbiter point sensor chassis and a motherboard. Components are being tested to determine why one of the four liquid hydrogen tank low-level fuel cut-off sensors failed in a routine prelaunch check during the launch countdown July 13. The failure caused mission managers to scrub Discovery's first launch attempt. The sensor protects the Shuttle's main engines by triggering their shutdown in the event fuel runs unexpectedly low. The sensor is one of four inside the liquid hydrogen section of the External Tank (ET).

The role of boron nitride nanotube as a new chemical sensor and potential reservoir for hydrogen halides environmental pollutants

NASA Astrophysics Data System (ADS)

Yoosefian, Mehdi; Etminan, Nazanin; Moghani, Maryam Zeraati; Mirzaei, Samaneh; Abbasi, Shima

2016-10-01

Density functional theory (DFT) studies on the interaction of hydrogen halides (HX) environmental pollutants and the boron nitride nanotubes (BNNTs) have been reported. To exploit the possibility of BNNTs as gas sensors, the adsorption of hydrogen fluoride (HF), hydrogen chloride (HCl) and hydrogen bromide (HBr) on the side wall of armchair (5,5) boron nitride nanotubes have been investigated. B3LYP/6-31G (d) level were used to analyze the structural and electronic properties of investigate sensor. The adsorption process were interpreted by highest occupied molecular orbital (HOMO)-lowest unoccupied molecular orbital (LUMO), quantum theory of atoms in molecules (QTAIM), natural bond orbital (NBO) and molecular electrostatic potential (MEP) analysis. Topological parameters of bond critical points have been used to calculate as measure of hydrogen bond (HB) strength. Stronger binding energy, larger charge transfer and charge density illustrate that HF gas possesses chemisorbed adsorption process. The obtained results also show the strongest HB in HF/BNNT complex. We expect that results could provide helpful information for the design of new BNNTs based sensing devices.

Tapered Optical Fiber Functionalized with Palladium Nanoparticles by Drop Casting and Laser Radiation for H2 and Volatile Organic Compounds Sensing Purposes

PubMed Central

González-Sierra, Nancy Elizabeth; Gómez-Pavón, Luz del Carmen; Pérez-Sánchez, Gerardo Francisco; Luis-Ramos, Arnulfo; Zaca-Morán, Plácido; Chávez-Ramírez, Fernando

2017-01-01

A comparative study on the sensing properties of a tapered optical fiber pristine and functionalized with the palladium nanoparticles to hydrogen and volatile organic compounds (VOCs), is presented. The sensor response and, response/recovery times were extracted from the measurements of the transient response of the device. The tapered optical fiber sensor was fabricated using a single-mode optical fiber by the flame-brushing technique. Functionalization of the optical fiber was performed using an aqueous solution of palladium chloride by drop-casting technique assisted for laser radiation. The detection principle of the sensor is based on the changes in the optical properties of palladium nanoparticles when exposed to reducing gases, which causes a variation in the absorption of evanescent waves. A continuous wave laser diode operating at 1550 nm is used for the sensor characterization. The sensor functionalized with palladium nanoparticles by this technique is viable for the sensing of hydrogen and VOCs, since it shows an enhancement in sensor response and response time compared to the sensor based on the pristine optical microfiber. The results show that the fabricated sensor is competitive with other fiber optic sensors functionalized with palladium nanoparticles to the hydrogen. PMID:28878161

Tapered Optical Fiber Functionalized with Palladium Nanoparticles by Drop Casting and Laser Radiation for H₂ and Volatile Organic Compounds Sensing Purposes.

PubMed

González-Sierra, Nancy Elizabeth; Gómez-Pavón, Luz Del Carmen; Pérez-Sánchez, Gerardo Francisco; Luis-Ramos, Arnulfo; Zaca-Morán, Plácido; Muñoz-Pacheco, Jesús Manuel; Chávez-Ramírez, Francisco

2017-09-06

A comparative study on the sensing properties of a tapered optical fiber pristine and functionalized with the palladium nanoparticles to hydrogen and volatile organic compounds (VOCs), is presented. The sensor response and, response/recovery times were extracted from the measurements of the transient response of the device. The tapered optical fiber sensor was fabricated using a single-mode optical fiber by the flame-brushing technique. Functionalization of the optical fiber was performed using an aqueous solution of palladium chloride by drop-casting technique assisted for laser radiation. The detection principle of the sensor is based on the changes in the optical properties of palladium nanoparticles when exposed to reducing gases, which causes a variation in the absorption of evanescent waves. A continuous wave laser diode operating at 1550 nm is used for the sensor characterization. The sensor functionalized with palladium nanoparticles by this technique is viable for the sensing of hydrogen and VOCs, since it shows an enhancement in sensor response and response time compared to the sensor based on the pristine optical microfiber. The results show that the fabricated sensor is competitive with other fiber optic sensors functionalized with palladium nanoparticles to the hydrogen.

Thermally Stable Ohmic Contacts on Silicon Carbide Developed for High- Temperature Sensors and Electronics

NASA Technical Reports Server (NTRS)

Okojie, Robert S.

2001-01-01

The NASA aerospace program, in particular, requires breakthrough instrumentation inside the combustion chambers of engines for the purpose of, among other things, improving computational fluid dynamics code validation and active engine behavioral control (combustion, flow, stall, and noise). This environment can be as high as 600 degrees Celsius, which is beyond the capability of silicon and gallium arsenide devices. Silicon-carbide- (SiC-) based devices appear to be the most technologically mature among wide-bandgap semiconductors with the proven capability to function at temperatures above 500 degrees Celsius. However, the contact metalization of SiC degrades severely beyond this temperature because of factors such as the interdiffusion between layers, oxidation of the contact, and compositional and microstructural changes at the metal/semiconductor interface. These mechanisms have been proven to be device killers. Very costly and weight-adding packaging schemes that include vacuum sealing are sometimes adopted as a solution.

CARES/Life Used for Probabilistic Characterization of MEMS Pressure Sensor Membranes

NASA Technical Reports Server (NTRS)

Nemeth, Noel N.

2002-01-01

Microelectromechanical systems (MEMS) devices are typically made from brittle materials such as silicon using traditional semiconductor manufacturing techniques. They can be etched (or micromachined) from larger structures or can be built up with material deposition processes. Maintaining dimensional control and consistent mechanical properties is considerably more difficult for MEMS because feature size is on the micrometer scale. Therefore, the application of probabilistic design methodology becomes necessary for MEMS. This was demonstrated at the NASA Glenn Research Center and Case Western Reserve University in an investigation that used the NASA-developed CARES/Life brittle material design program to study the probabilistic fracture strength behavior of single-crystal SiC, polycrystalline SiC, and amorphous Si3N4 pressurized 1-mm-square thin-film diaphragms. These materials are of interest because of their superior high-temperature characteristics, which are desirable for harsh environment applications such as turbine engine and rocket propulsion system hot sections.

Improved fuel-cell-type hydrogen sensor

NASA Technical Reports Server (NTRS)

Rudek, F. P.; Rutkowski, M. D.

1968-01-01

Modified hydrogen sensor replaces oxygen cathode with a cathode consisting of a sealed paste of gold hydroxide and a pure gold current collector. The net reaction which occurs during cell operation is the reduction of the gold hydroxide to gold and water, with a half-cell potential of 1.4 volts.

Sensitive hydrogen leak detector

DOEpatents

Myneni, Ganapati Rao

1999-01-01

A sensitive hydrogen leak detector system using passivation of a stainless steel vacuum chamber for low hydrogen outgassing, a high compression ratio vacuum system, a getter operating at 77.5 K and a residual gas analyzer as a quantitative hydrogen sensor.

Hafnium—an optical hydrogen sensor spanning six orders in pressure

PubMed Central

Boelsma, C.; Bannenberg, L. J.; van Setten, M. J.; Steinke, N.-J.; van Well, A. A.; Dam, B.

2017-01-01

Hydrogen detection is essential for its implementation as an energy vector. So far, palladium is considered to be the most effective hydrogen sensing material. Here we show that palladium-capped hafnium thin films show a highly reproducible change in optical transmission in response to a hydrogen exposure ranging over six orders of magnitude in pressure. The optical signal is hysteresis-free within this range, which includes a transition between two structural phases. A temperature change results in a uniform shift of the optical signal. This, to our knowledge unique, feature facilitates the sensor calibration and suggests a constant hydrogenation enthalpy. In addition, it suggests an anomalously steep increase of the entropy with the hydrogen/metal ratio that cannot be explained on the basis of a classical solid solution model. The optical behaviour as a function of its hydrogen content makes hafnium well-suited for use as a hydrogen detection material. PMID:28580959

Development of a detection sensor for lethal H2S gas.

PubMed

Park, Young-Ho; Kim, Yong-Jae; Lee, Chang-Seop

2012-07-01

The gas which may be lethal to human body with short-term exposure in common industrial fields or workplaces in LAB may paralyze the olfactory sense and impose severe damages to central nervous system and lung. This study is concerned with the gas sensor which allows individuals to avoid the toxic gas that may be generated in the space with residues of organic wastes under 50 degrees C or above. This study investigates response and selectivity of the sensor to hydrogen sulfide gas with operating temperatures and catalysts. The thick-film semiconductor sensor for hydrogen sulfide gas detection was fabricated WO3/SnO2 prepared by sol-gel and precipitation methods. The nanosized SnO2 powder mixed with the various metal oxides (WO3, TiO2, and ZnO) and doped with transition metals (Au, Ru, Pd Ag and In). Particle sizes, specific surface areas and phases of sensor materials were investigated by SEM, BET and XRD analyses. The metal-WO3/SnO2 thick films were prepared by screen-printing method. The measured response to hydrogen sulfide gas is defined as the ratio (Ra/R,) of the resistance of WO3ISnO2 film in air to the resistance of WO3/SnO2 film in a hydrogen sulfide gas. It was shown that the highest response and selectivity of the sensor for hydrogen sulfide by doping with 1 wt% Ru and 10 wt% WO3 to SnO2 at the optimum operating temperature of 200 degrees C.

Recent advance in high manufacturing readiness level and high temperature CMOS mixed-signal integrated circuits on silicon carbide

NASA Astrophysics Data System (ADS)

Weng, M. H.; Clark, D. T.; Wright, S. N.; Gordon, D. L.; Duncan, M. A.; Kirkham, S. J.; Idris, M. I.; Chan, H. K.; Young, R. A. R.; Ramsay, E. P.; Wright, N. G.; Horsfall, A. B.

2017-05-01

A high manufacturing readiness level silicon carbide (SiC) CMOS technology is presented. The unique process flow enables the monolithic integration of pMOS and nMOS transistors with passive circuit elements capable of operation at temperatures of 300 °C and beyond. Critical to this functionality is the behaviour of the gate dielectric and data for high temperature capacitance-voltage measurements are reported for SiO2/4H-SiC (n and p type) MOS structures. In addition, a summary of the long term reliability for a range of structures including contact chains to both n-type and p-type SiC, as well as simple logic circuits is presented, showing function after 2000 h at 300 °C. Circuit data is also presented for the performance of digital logic devices, a 4 to 1 analogue multiplexer and a configurable timer operating over a wide temperature range. A high temperature micro-oven system has been utilised to enable the high temperature testing and stressing of units assembled in ceramic dual in line packages, including a high temperature small form-factor SiC based bridge leg power module prototype, operated for over 1000 h at 300 °C. The data presented show that SiC CMOS is a key enabling technology in high temperature integrated circuit design. In particular it provides the ability to realise sensor interface circuits capable of operating above 300 °C, accommodate shifts in key parameters enabling deployment in applications including automotive, aerospace and deep well drilling.

Thermodynamics of Volatile Species in the Silicon-Oxygen-Hydrogen System Studied

NASA Technical Reports Server (NTRS)

Jacobson, Nathan S.; Opila, Elizabeth J.; Copland, Evan H.; Myers, Dwight

2005-01-01

The volatilization of silica (SiO2) to silicon hydroxides and oxyhydroxides because of reaction with water vapor is important in a variety of high-temperature corrosion processes. For example, the lifetimes of silicon carbide (SiC) and silicon nitride (Si3N4) - based components in combustion environments are limited by silica volatility. To understand and model this process, it is essential to have accurate thermodynamic data for the formation of volatile silicon hydroxides and oxyhydroxides.

Sulfur in the Corrosion of Superalloys.

DTIC Science & Technology

1981-11-06

mechanically on SiC paper from 240 grit to 600 grit. Some samples were pre- annealed in one atmosphere of hydrogen at about 8000 C prior to the experiment...experiments the samples were used as-received while in others the samples were given a high temperature anneal prior to the diffusion anneal . The...C04- 74-G-0130. Cylindrical pellets, about 11 mm in diameter by 1.7 mm thick were used as received or pre- annealed in 1 atm 02. The samples were

Fundamental Pathways for the Adsorption and Transport of Hydrogen on TiO2 Surfaces: Origin for Effective Sensing at about Room Temperature.

PubMed

Wang, Zhuo; Xia, Xiaohong; Guo, Meilan; Shao, Guosheng

2016-12-28

Effective detection of hydrogen at lowered temperature is highly desirable in promoting safety in using this abundant gas as a clean energy source. Through first-principle calculations in the framework of density functional theory, we find that the high-energy (002) surface for rutile TiO 2 is significantly more effective in adsorbing hydrogen atoms through dissociating hydrogen molecules. The pathways for the dissociation of hydrogen molecules and sequential migration of hydrogen atoms are identified through searching along various transitional states. Pathways of low potential barriers indicate promise for hydrogen sensing, even close to room temperature. This has been proven through sensors made of thin films of well-aligned rutile nanorods, wherein the high-energy (002) surface dictates the top surface of the active layer of the sensors.

DOE Office of Scientific and Technical Information (OSTI.GOV)

O'Malley, Kathleen; Lopez, Hugo; Cairns, Julie

An overview of the main North American codes and standards associated with hydrogen safety sensors is provided. The distinction between a code and a standard is defined, and the relationship between standards and codes is clarified, especially for those circumstances where a standard or a certification requirement is explicitly referenced within a code. The report identifies three main types of standards commonly applied to hydrogen sensors (interface and controls standards, shock and hazard standards, and performance-based standards). The certification process and a list and description of the main standards and model codes associated with the use of hydrogen safety sensorsmore » in hydrogen infrastructure are presented.« less

Study of a solid hydrogen cooler for spacecraft instruments and sensors

NASA Astrophysics Data System (ADS)

Sherman, A.

1980-08-01

The results of tests and studies to investigate the utilization of solid hydrogen for cooling of spacecraft instruments and sensors are presented. The results are presented in two sections; the first describing the tests in which an existing single stage solid cooler was filled and tested with solid hydrogen and the second which describes the analysis and design of a catalytic converter which will be tested in the vent line of the cooler.

Study of a solid hydrogen cooler for spacecraft instruments and sensors

NASA Technical Reports Server (NTRS)

Sherman, A.

1980-01-01

The results of tests and studies to investigate the utilization of solid hydrogen for cooling of spacecraft instruments and sensors are presented. The results are presented in two sections; the first describing the tests in which an existing single stage solid cooler was filled and tested with solid hydrogen and the second which describes the analysis and design of a catalytic converter which will be tested in the vent line of the cooler.

Test Methodologies for Hydrogen Sensor Performance Assessment: Chamber vs. Flow Through Test Apparatus: Preprint

DOE Office of Scientific and Technical Information (OSTI.GOV)

Buttner, William J; Hartmann, Kevin S; Schmidt, Kara

Certification of hydrogen sensors to standards often prescribes using large-volume test chambers [1, 2]. However, feedback from stakeholders such as sensor manufacturers and end-users indicate that chamber test methods are often viewed as too slow and expensive for routine assessment. Flow through test methods potentially are an efficient, cost-effective alternative for sensor performance assessment. A large number of sensors can be simultaneously tested, in series or in parallel, with an appropriate flow through test fixture. The recent development of sensors with response times of less than 1s mandates improvements in equipment and methodology to properly capture the performance of thismore » new generation of fast sensors; flow methods are a viable approach for accurate response and recovery time determinations, but there are potential drawbacks. According to ISO 26142 [1], flow through test methods may not properly simulate ambient applications. In chamber test methods, gas transport to the sensor can be dominated by diffusion which is viewed by some users as mimicking deployment in rooms and other confined spaces. Alternatively, in flow through methods, forced flow transports the gas to the sensing element. The advective flow dynamics may induce changes in the sensor behaviour relative to the quasi-quiescent condition that may prevail in chamber test methods. One goal of the current activity in the JRC and NREL sensor laboratories [3, 4] is to develop a validated flow through apparatus and methods for hydrogen sensor performance testing. In addition to minimizing the impact on sensor behaviour induced by differences in flow dynamics, challenges associated with flow through methods include the ability to control environmental parameters (humidity, pressure and temperature) during the test and changes in the test gas composition induced by chemical reactions with upstream sensors. Guidelines on flow through test apparatus design and protocols for the evaluation of hydrogen sensor performance are being developed. Various commercial sensor platforms (e.g., thermal conductivity, catalytic and metal semiconductor) were used to demonstrate the advantages and issues with the flow through methodology.« less

The nanostructure and microstructure of SiC surface layers deposited by MWCVD and ECRCVD

NASA Astrophysics Data System (ADS)

Dul, K.; Jonas, S.; Handke, B.

2017-12-01

Scanning electron microscopy (SEM) and Atomic force microscopy (AFM) have been used to investigate ex-situ the surface topography of SiC layers deposited on Si(100) by Microwave Chemical Vapour Deposition (MWCVD) -S1,S2 layers and Electron Cyclotron Resonance Chemical Vapor Deposition (ECRCVD) - layers S3,S4, using silane, methane, and hydrogen. The effects of sample temperature and gas flow on the nanostructure and microstructure have been investigated. The nanostructure was described by three-dimensional surface roughness analysis based on digital image processing, which gives a tool to quantify different aspects of surface features. A total of 13 different numerical parameters used to describe the surface topography were used. The scanning electron image (SEM) of the microstructure of layers S1, S2, and S4 was similar, however, layer S3 was completely different; appearing like grains. Nonetheless, it can be seen that no grain boundary structure is present in the AFM images.

Steam Oxidation of FeCrAl and SiC in the Severe Accident Test Station (SATS)

DOE Office of Scientific and Technical Information (OSTI.GOV)

Pint, Bruce A.; Unocic, Kinga A.; Terrani, Kurt A.

2015-08-01

Numerous research projects are directed towards developing accident tolerant fuel (ATF) concepts that will enhance safety margins in light water reactors (LWR) during severe accident scenarios. In the U.S. program, the high temperature steam oxidation performance of ATF solutions has been evaluated in the Severe Accident Test Station (SATS) at Oak Ridge National Laboratory (ORNL) since 2012 [1-3] and this facility continues to support those efforts in the ATF community. Compared to the current UO2/Zr-based alloy fuel system, alternative cladding materials can offer slower oxidation kinetics and a smaller enthalpy of oxidation that can significantly reduce the rate of heatmore » and hydrogen generation in the core during a coolant-limited severe accident [4-5]. Thus, steam oxidation behavior is a key aspect of the evaluation of ATF concepts. This report summarizes recent work to measure steam oxidation kinetics of FeCrAl and SiC specimens in the SATS.« less

Silicon carbide at nanoscale: Finite single-walled to "infinite" multi-walled tubes

NASA Astrophysics Data System (ADS)

Adhikari, Kapil

A systematic ab initio study of silicon carbide (SiC) nanostructures, especially finite single-walled, infinite double- and multi-walled nanotubes and nanocones is presented. Electronic and structural properties of all these nanostructures have been calculated using hybrid density functionals (B3LYP and PBE0) as implemented in the GAUSSIAN 03/09 suite of software. The unusual dependence of band gap of silicon carbide nanotubes (SiCNT) has been explained as a direct consequence of curvature effect on the ionicity of the bonds. The study of fullerene hemisphere capped, finite SiC nanotubes indicates that the carbon-capped SiC nanotubes are energetically more preferred than silicon-capped finite or hydrogen terminated infinite nanotubes. Capping a nanotube by fullerene hemisphere reduces its band gap. SiC nanocones have also been investigated as possible cap structures of nanotubes. Electronic properties of the nanocones are found to be strongly dependent upon their tip and edge structures, with possible interesting applications in surface science. Three types of double-walled SiCNTs (n, n)@(m, m) (3 ≤ n ≤ 6 ; 7 ≤ m ≤ 12) have been studied using the finite cluster approximation. The stabilities of these nanotubes are of the same order as those of the single-walled SiC nanotubes and it should be experimentally possible to synthesize both single-walled and double-walled SiC nanotubes. The binding energy per atom or the cohesive energy of the double-walled nanotubes depends not only on the number of atoms but also on the coupling of the constituent single-walled nanotubes and their types. A study of binding energies, Mulliken charges, density of states and HOMO-LUMO gaps has been performed for all nanotubes from (n, n)@(n+3,n+3) to (n, n)@(n+6, n+6) (n=3-6). Evolution of band gaps of the SiCNTs with increase in the number of walls has also been investigated. The nature of interaction between transition metal atoms and silicon carbide nanotubes with different curvature has also been investigated. The curvature of the nanotubes affects the nature of the interaction between the nanotubes and the transition teal atoms. Our study of functionalized SiCNTs by 3d transition metal atoms indicates that these nanostructures can have possible applications in spintronics and nano-magnetic storage.

First fluorescent sensor for fluoride based on 2-ureido-4[1H]-pyrimidinone quadruple hydrogen-bonded AADD supramolecular assembly.

PubMed

Zhao, Yao-Peng; Zhao, Chun-Chang; Wu, Li-Zhu; Zhang, Li-Ping; Tung, Chen-Ho; Pan, Yuan-Jiang

2006-03-03

A simple, highly selective, neutral, fluorescent sensor for fluoride anions is reported. It is based on 2-ureido-4[1H]-pyrimidinone quadruple hydrogen-bonded AADD supramolecular assembly, and its assembling and disassembling processes are also able to respond to external stimuli reversibly.

Fast Solar Polarimeter: Prototype Characterization and First Results

NASA Astrophysics Data System (ADS)

Iglesias, F. A.; Feller, A.; Krishnappa, N.; Solanki, S. K.

2016-04-01

Due to the differential and non-simultaneous nature of polarization measurements, seeing induced crosstalk (SIC) and seeing limited spatial resolution can easily counterbalance the benefits of solar imaging polarimetry from the ground. The development of instrumental techniques to treat these issues is necessary to fully exploit the next generation of large-aperture solar facilities, and maintain ground-based data at a competitive level with respect to its space-based counterpart. In particular, considering that many open questions in modern solar physics demand data with challenging specifications of resolution and polarimetric sensitivity that can only be achieved with large telescope apertures (Stenflo 1999). Even if state-of-the-art adaptive optics systems greatly improve image quality, their limited correction —due to finite bandwidth, mode number and seeing anisoplanat- ism— produces large residual values of SIC (Krishnappa & Feller 2012). Dual beam polarimeters are commonly used to reduce SIC between the intensity and polarization signals, however, they cannot compensate for the SIC introduced between circular and linear polarization, which can be relevant for high-precision polarimetry. It is known that fast modulation effectively reduces SIC, but the demodulation of the corresponding intensity signals imposes hard requirements on the frame rate of the associated cameras. One way to avoid a fast sensor, is to decouple the camera readout from the intensity demodulation step. This concept is the cornerstone of the very successful Zurich Imaging Polarimeter (ZIMPOL). Even though the ZIMPOL solution allows the detection of very faint signals (˜10-5), its design is not suitable for high-spatial-resolution applications. We are developing a polarimeter that focuses on both spatial resolution (<0.5 arcsec) and polarimetric sensitivity (10-4). The prototype of this Fast Solar Polarimeter (FSP, see Feller et al. 2014), employs a high frame-rate (400 fps), low-noise (<4 e- RMS), pnCCD camera (Hartmann et al. 2006) that is read in synchronization with a polarization modulator based on ferroelectric liquid crystals. The modulator package is similar to the SOLIS (Keller et al. 2003) design and optimized to have an achromatic total polarimetric efficiency above 80 % in the 400-700 nm wavelength range. The fast modulation frequency of FSP, yielding up to 100 full-Stokes measurements per second, and high duty cycle (>95%), have the double benefit of reducing seeing induced artifacts and improving the final spatial resolution by providing an optimal regime for the application of post-facto image reconstruction techniques. In this poster we describe the FSP prototype, including the characterization results, a technique to correct image smearing due to the sensor frame transfer (Iglesias et al. 2015) and some of the first measurements obtained with the 68-cm Vacuum Tower Telescope located at the Observatorio del Teide, Spain.

Temperature Induced Voltage Offset Drifts in Silicon Carbide Pressure Sensors

NASA Technical Reports Server (NTRS)

Okojie, Robert S.; Lukco, Dorothy; Nguyen, Vu; Savrun, Ender

2012-01-01

We report the reduction of transient drifts in the zero pressure offset voltage in silicon carbide (SiC) pressure sensors when operating at 600 C. The previously observed maximum drift of +/- 10 mV of the reference offset voltage at 600 C was reduced to within +/- 5 mV. The offset voltage drifts and bridge resistance changes over time at test temperature are explained in terms of the microstructure and phase changes occurring within the contact metallization, as analyzed by Auger electron spectroscopy and field emission scanning electron microscopy. The results have helped to identify the upper temperature reliable operational limit of this particular metallization scheme to be 605 C.

Reliable Breakdown Obtained in Silicon Carbide Rectifiers

NASA Technical Reports Server (NTRS)

Neudeck, Philip G.

1997-01-01

The High Temperature Integrated Electronics and Sensor (HTIES) Program at the NASA Lewis Research Center is currently developing silicon carbide (SiC) for use in harsh conditions where silicon, the semiconductor used in nearly all of today's electronics, cannot function. Silicon carbide's demonstrated ability to function under extreme high-temperature, high-power, and/or high-radiation conditions will enable significant improvements to a far-ranging variety of applications and systems. These range from improved high-voltage switching for energy savings in public electric power distribution and electric vehicles, to more powerful microwave electronics for radar and cellular communications, to sensor and controls for cleaner-burning, more fuel-efficient jet aircraft and automobile engines.

KSC-05PD-1587

NASA Technical Reports Server (NTRS)

2005-01-01

KENNEDY SPACE CENTER, FLA. Patricia Slinger (left), a test engineer, and Monica Hagley, an avionics test engineer, look at a replacement orbiter point sensor chassis. Components are being tested to determine why one of the four liquid hydrogen tank low- level fuel cut-off sensors failed in a routine prelaunch check during the launch countdown July 13. The failure caused mission managers to scrub Discovery's first launch attempt. The sensor protects the Shuttle's main engines by triggering their shutdown in the event fuel runs unexpectedly low. The sensor is one of four inside the liquid hydrogen section of the External Tank (ET).

Numerical Simulation of Temperature Sensor Self-Heating Effects in Gaseous and Liquid Hydrogen Under Cryogenic Conditions

NASA Astrophysics Data System (ADS)

Langebach, R.; Haberstroh, Ch.

2010-04-01

In this paper a numerical investigation is presented that characterizes the free convective flow field and the resulting heat transfer mechanisms for a resistance temperature sensor in liquid and gaseous hydrogen at various cryogenic conditions. Motivation for this is the detection of stratification effects e.g. inside a liquid hydrogen storage vessel. In this case, the local temperature measurement in still resting fluid requires a very high standard of precision despite an extremely poor thermal anchoring of the sensor. Due to electrical power dissipation a certain amount of heat has to be transferred from sensor to fluid. This can cause relevant measurement errors due to a slightly elevated sensor temperature. A commercial CFD code was employed to calculate the heat and mass transfer around the typical sensor geometry. The results were compared with existing heat transfer correlations from the literature. As a result the magnitude of averaged heat transfer coefficients and sensor over-heating as a function of power dissipation are given in figures. From the gained numerical results a new correlation for the averaged Nusselt Number is presented that represents very low Rayleigh Number flows. The correlation can be used to estimate sensor self-heating effects in similar situations.

Thin film hydrogen sensor

DOEpatents

Cheng, Yang-Tse; Poli, Andrea A.; Meltser, Mark Alexander

1999-01-01

A thin film hydrogen sensor, includes: a substantially flat ceramic substrate with first and second planar sides and a first substrate end opposite a second substrate end; a thin film temperature responsive resistor on the first planar side of the substrate proximate to the first substrate end; a thin film hydrogen responsive metal resistor on the first planar side of the substrate proximate to the fist substrate end and proximate to the temperature responsive resistor; and a heater on the second planar side of the substrate proximate to the first end.

A titania nanotube-array room-temperature sensor for selective detection of hydrogen at low concentrations.

PubMed

Varghese, Oomman K; Mor, Gopal K; Grimes, Craig A; Paulose, Maggie; Mukherjee, Niloy

2004-09-01

A tremendous variation in electrical resistance, from the semiconductor to metallic range, has been observed in titania nanotube arrays at room temperature, approximately 25 degrees C, in the presence of < or = 1000 ppm hydrogen gas. The nanotube arrays are fabricated by anodizing titanium foil in an aqueous electrolyte solution containing hydrofluoric acid and acetic acid. Subsequently, the arrays are coated with a 10 nm layer of palladium by evaporation. Electrical contacts are made by sputtering a 2 mm diameter platinum disk atop the Pd-coated nanotube array. These sensors exhibit a resistance variation of the order of 10(4) in the presence of 100 ppm hydrogen at 25 degrees C. The sensors demonstrate complete reversibility, repeatability, high selectivity, negligible drift and wide dynamic range. The nanoscale geometry of the nanotubes, in particular the points of tube-to-tube contact, is believed to be responsible for the outstanding hydrogen gas sensitivities.

Investigation of hydrogen sulfide gas using Pd/Pt material based fiber Bragg grating sensor

NASA Astrophysics Data System (ADS)

Bedi, Amna; Rao, Dusari Nageswara; Kumar, Santosh

2018-02-01

In this work, Pd/Pt material based fiber Bragg grating (FBG) sensors has been proposed for detection of hydrogen sulfide gas. Here, characteristics of FBG parameters were numerically calculated and simulated. The variation in reflectivity based on refractive index has been shown. The reflectivity of FBG can be varied when refractive index is changed. The proposed sensor works on very low concentration i.e., 0% to 1%, which has the capability to detect in the early stage.

Experimental study of temperature sensor for an ocean-going liquid hydrogen (LH2) carrier

NASA Astrophysics Data System (ADS)

Nakano, A.; Shimazaki, T.; Sekiya, M.; Shiozawa, H.; Aoyagi, A.; Ohtsuka, K.; Iwakiri, T.; Mikami, Z.; Sato, M.; Kinoshita, K.; Matsuoka, T.; Takayama, Y.; Yamamoto, K.

2018-04-01

The prototype temperature sensors for an ocean-going liquid hydrogen (LH2) carrier were manufactured by way of trial. All of the sensors adopted Platinum 1000 (PT-1000) resistance thermometer elements. Various configurations of preproduction temperature sensors were tested in AIST's LH2 test facility. In the experiments, a PT-1000 resistance thermometer, calibrated at the National Metrology Institute of Japan at AIST, was used as the standard thermometer. The temperatures measured by the preproduction sensors were compared with the temperatures measured by the standard thermometer, and the measurement accuracy of the temperature sensors in LH2 was investigated and discussed. It was confirmed that the measurement accuracies of the preproduction temperature sensors were within ±50 mK, which is the required measurement accuracy for a technical demonstration ocean-going LH2 carrier.

Sensitive hydrogen leak detector

DOEpatents

Myneni, G.R.

1999-08-03

A sensitive hydrogen leak detector system is described which uses passivation of a stainless steel vacuum chamber for low hydrogen outgassing, a high compression ratio vacuum system, a getter operating at 77.5 K and a residual gas analyzer as a quantitative hydrogen sensor. 1 fig.

Research | Hydrogen and Fuel Cells | NREL

Science.gov Websites

a laboratory apparatus to measure thermal conductivity Hydrogen Storage Characterizing hydrogen and fuel cell technology commercialization Photo of a researcher working with sensor testing equipment hydrogen station equipment Technology Validation Collecting and analyzing real-world data to show the

UV-IR Hydrogen Fire Detector

NASA Technical Reports Server (NTRS)

Medelius, Pedro J.; Steinrock, T. (Technical Monitor)

2001-01-01

The objective of this project is to design a sensor than can accurately determine the presence of a hydrogen fire within its field of view and to eliminate the main cause of false alarms: reflections from the flare stack. Details are given in viewgraph presentation form on the technical approach, initial testing, sensor testing, intellectual property, patented technology, and licensing.

Fabry-Perot microcavity sensor for H2-breath-test analysis

NASA Astrophysics Data System (ADS)

Vincenti, Maria Antonietta; De Sario, Marco; Petruzzelli, V.; D'Orazio, Antonella; Prudenzano, Francesco; de Ceglia, Domenico; Scalora, Michael

2007-10-01

Leak detection of hydrogen for medical purposes, based on the monitoring of the optical response of a simple Fabry-Perot microcavity, is proposed to investigate either the occurrence of lactose intolerance, or lactose malabsorption condition. Both pathologic conditions result in bacterial overgrowth in the intestine, which causes increased spontaneous emission of H2 in the human breath. Two sensitivity figures of merit are introduced to inspect changes in the sensor response, and to relate the microcavity response to a pathologic condition, which is strictly related to a different level of exhaled hydrogen. Different sensor configurations using a metal-dielectric microcavity are reported and discussed in order to make the most of the well-known ability of palladium to spontaneously absorb hydrogen.

New generation of α-MnO2 nanowires @PDMS composite as a hydrogen gas sensor

NASA Astrophysics Data System (ADS)

Hamidi, Seyedeh Mehri; Mosivand, Alireza; Mahboubi, Mina; Arabi, Hadi; Azad, Narin; Jamal, Murtada Riyadh

2018-03-01

New hydrogen gas sensor has been prepared by α-MnO2 nanowires in polydimethylsiloxane matrix. For this purpose, the high aspect ratio α-MnO2 nanowires has been prepared by the aid of hydrothermal method and then dispersed into poly-dimethyl siloxane polymer media. For gas sensing, the samples have been exposed under different gas concentrations from 0 to 5%. The sensor responses have been examined by normalized ellipsometric parameter with respect to the chamber filled with N2 Gas. Our results indicate linear behavior of resonance wavelength in ellipsometric parameter as a function of gas concentrations which can open a new insight for the sample's capability to hydrogen gas sensing applications.

Sniffer used as portable hydrogen leak detector

NASA Technical Reports Server (NTRS)

Dayan, V. H.; Rommel, M. A.

1966-01-01

Sniffer type portable monitor detects hydrogen in air, oxygen, nitrogen, or helium. It indicates the presence of hydrogen in contact with activated palladium black by a change in color of a thermochromic paint, and indicates the quantity of hydrogen by a sensor probe and continuous readout.

Laser ablation for membrane processing of AlGaN/GaN- and micro structured ferroelectric thin film MEMS and SiC pressure sensors for extreme conditions

NASA Astrophysics Data System (ADS)

Zehetner, J.; Vanko, G.; Dzuba, J.; Ryger, I.; Lalinsky, T.; Benkler, Manuel; Lucki, Michal

2015-05-01

AlGaN/GaN based high electron mobility transistors (HEMTs), Schottky diodes and/or resistors have been presented as sensing devices for mechanical or chemical sensors operating in extreme conditions. In addition we investigate ferroelectric thin films for integration into micro-electro-mechanical-systems (MEMS). Creation of appropriate diaphragms and/or cantilevers out of SiC is necessary for further improvement of sensing properties of such MEMS sensors. For example sensitivity of the AlGaN/GaN based MEMS pressure sensor can be modified by membrane thickness. We demonstrated that a 4H-SiC 80μm thick diaphragms can be fabricated much faster with laser ablation than by electrochemical, photochemical or reactive ion etching (RIE). We were able to verify the feasibility of this process by fabrication of micromechanical membrane structures also in bulk 3C-SiC, borosilicate glass, sapphire and Al2O3 ceramic substrates by femtosecond laser (520nm) ablation. On a 350μm thick 4H-SiC substrate we produced an array of 275μm deep and 1000μm to 3000μm of diameter blind holes without damaging the 2μm AlN layer at the back side. In addition we investigated ferroelectric thin films as they can be deposited and micro-patterned by a direct UV-lithography method after the ablation process for a specific membrane design. The risk to harm or damage the function of thin films was eliminated by that means. Some defects in the ablated membranes are also affected by the polarisation of the laser light. Ripple structures oriented perpendicular to the laser polarisation promote creation of pin holes which would perforate a thin membrane. We developed an ablation technique strongly inhibiting formation of ripples and pin poles.

A new amperometric nanostructured sensor for the analytical determination of hydrogen peroxide.

PubMed

Guascito, M R; Filippo, E; Malitesta, C; Manno, D; Serra, A; Turco, A

2008-12-01

A new amperometric, nanostructured sensor for the analytical determination of hydrogen peroxide is proposed. This sensor was constructed by immobilizing silver nanoparticles in a polyvinyl alcohol (PVA) film on a platinum electrode, which was performed by direct drop-casting silver nanoparticles that were capped in a PVA colloidal suspension. UV-vis spectroscopy, X-ray diffraction and transmission electron microscopy were used to give a complete characterization of the nanostructured film. Cyclic voltammetry experiments yielded evidence that silver nanoparticles facilitate hydrogen peroxide reduction, showing excellent catalytic activity. Moreover, the cronoamperometric response of modified sensors was dependent on nanoparticle lifetime. Experiments were performed, using freshly prepared solutions, after 4 and 8 days. Results concerning the quantitative analysis of hydrogen peroxide, in terms of detection limit, linear range, sensitivity and standard deviation (STD), are discussed for each tested sensor type. Utilization of two different linear ranges (40 microM to 6mM and 1.25 microM to 1.0mM) enabled the assessment of concentration intervals having up to three orders of magnitude. Moreover, the electrode made using a 4-day-old solution showed the maximal sensitivity of 128 nA microM(-1)(4090 nA microM(-1)cm(-2)), yielding a limit of detection of 1 microuM and STD of 2.5 microAmM(-1). All of these analytical parameters make the constructed sensors suitable for peroxide determination in aqueous solution.

Polyaniline nanowires-gold nanoparticles hybrid network based chemiresistive hydrogen sulfide sensor

NASA Astrophysics Data System (ADS)

Shirsat, Mahendra D.; Bangar, Mangesh A.; Deshusses, Marc A.; Myung, Nosang V.; Mulchandani, Ashok

2009-02-01

We report a sensitive, selective, and fast responding room temperature chemiresistive sensor for hydrogen sulfide detection and quantification using polyaniline nanowires-gold nanoparticles hybrid network. The sensor was fabricated by facile electrochemical technique. Initially, polyaniline nanowires with a diameter of 250-320 nm bridging the gap between a pair of microfabricated gold electrodes were synthesized using templateless electrochemical polymerization using a two step galvanostatic technique. Polyaniline nanowires were then electrochemically functionalized with gold nanoparticles using cyclic voltammetry technique. These chemiresistive sensors show an excellent limit of detection (0.1 ppb), wide dynamic range (0.1-100 ppb), and very good selectivity and reproducibility.

More than the sum of its parts? A merged satellite product from MODIS and AMSR2 sea ice concentration

NASA Astrophysics Data System (ADS)

Ludwig, V. S.; Istomina, L.; Spreen, G.

2017-12-01

Arctic sea ice concentration (SIC), the fraction of a grid cell that is covered by sea ice, is relevant for a multitude of branches: physics (heat/momentum exchange), chemistry (gas exchange), biology (photosynthesis), navigation (location of pack ice) and others. It has been observed from passive microwave (PMW) radiometers on satellites continuously since 1979, providing an almost 40-year time series. However, the resolution is limited to typically 25 km which is good enough for climate studies but too coarse to properly resolve the ice edge or to show leads. The highest resolution from PMW sensors today is 5 km of the AMSR2 89 GHz channels. Thermal infrared (TIR) and visible (VIS) measurements provide much higher resolutions between 1 km (TIR) and 30 m (VIS, regional daily coverage). The higher resolutions come at the cost of depending on cloud-free fields of view (TIR and VIS) and daylight (VIS). We present a merged product of ASI-AMSR2 SIC (PMW) and MODIS SIC (TIR) at a nominal resolution of 1 km. This product benefits from both the independence of PMW towards cloud coverage and the high resolution of TIR data. An independent validation data set has been produced from manually selected, cloud-free Landsat VIS data at 30 m resolution. This dataset is used to evaluate the performance of the merged SIC dataset. Our results show that the merged product resolves features which are smeared out by the PMW data while benefitting from the PMW data in cloudy cases and is thus indeed more than the sum of its parts.

Study of properties and development of sensors based on graphene films grown on SiC (0001) by thermal destruction method

NASA Astrophysics Data System (ADS)

Lebedev, A. A.; Davydov, V. Y.; Usachov, D. Y.; Lebedev, S. P.; Smirnov, A. N.; Levitskii, V. S.; Eliseyev, I. A.; Alekseev, P. A.; Dunaevskiy, M. S.; Rybkin, A. G.; Novikov, S. N.; Makarov, Yu N.

2018-01-01

The structural, chemical, and electronic properties of epitaxial graphene films grown by thermal decomposition of the Si-face of a semi-insulating 6H-SiC substrate in an argon environment are studied by Raman spectroscopy, X-ray photoelectron spectroscopy and angle-resolved photoemission. It was demonstrated the possibility of fabrication of the gas and biosensors that is based on grown graphene films. The gas sensors are sufficiently sensitive to NO2 at low concentrations. The biosensor operation was checked using an immunochemical system comprising fluorescein dye and monoclonal anti fluorescein antibodies. The sensor detects fluorescein concentration on a level of 1-10 ng/mL and bovine serum albumin- fluorescein conjugate on a level of 1-5 ng/mL. The proposed device has good prospects for use for early diagnostics of various diseases.

Thin film hydrogen sensor

DOEpatents

Cheng, Y.T.; Poli, A.A.; Meltser, M.A.

1999-03-23

A thin film hydrogen sensor includes a substantially flat ceramic substrate with first and second planar sides and a first substrate end opposite a second substrate end; a thin film temperature responsive resistor on the first planar side of the substrate proximate to the first substrate end; a thin film hydrogen responsive metal resistor on the first planar side of the substrate proximate to the fist substrate end and proximate to the temperature responsive resistor; and a heater on the second planar side of the substrate proximate to the first end. 5 figs.

Highly sensitive H2 gas sensor of Co doped ZnO nanostructures

NASA Astrophysics Data System (ADS)

Bhati, Vijendra Singh; Ranwa, Sapana; Kumar, Mahesh

2018-04-01

In this report, the hydrogen gas sensing properties based on Co doped ZnO nanostructures are explored. The undoped and Co doped nanostructures were grown by RF magnetron sputtering system, and its structural, morphological, and hydrogen sensing behavior are investigated. The maximum relative response was occurred by the 2.5% Co doped ZnO nanostructures among undoped and other doped sensors. The enhancement of relative response might be due to large chemisorbed sites formation on the ZnO surface for the reaction to hydrogen gas.

High-Sensitivity and Low-Power Flexible Schottky Hydrogen Sensor Based on Silicon Nanomembrane.

PubMed

Cho, Minkyu; Yun, Jeonghoon; Kwon, Donguk; Kim, Kyuyoung; Park, Inkyu

2018-04-18

High-performance and low-power flexible Schottky diode-based hydrogen sensor was developed. The sensor was fabricated by releasing Si nanomembrane (SiNM) and transferring onto a plastic substrate. After the transfer, palladium (Pd) and aluminum (Al) were selectively deposited as a sensing material and an electrode, respectively. The top-down fabrication process of flexible Pd/SiNM diode H 2 sensor is facile compared to other existing bottom-up fabricated flexible gas sensors while showing excellent H 2 sensitivity (Δ I/ I 0 > 700-0.5% H 2 concentrations) and fast response time (τ 10-90 = 22 s) at room temperature. In addition, selectivity, humidity, and mechanical tests verify that the sensor has excellent reliability and robustness under various environments. The operating power consumption of the sensor is only in the nanowatt range, which indicates its potential applications in low-power portable and wearable electronics.

Performance of Orbital Neutron Instruments for Spatially Resolved Hydrogen Measurements of Airless Planetary Bodies

PubMed Central

Elphic, Richard C.; Feldman, William C.; Funsten, Herbert O.; Prettyman, Thomas H.

2010-01-01

Abstract Orbital neutron spectroscopy has become a standard technique for measuring planetary surface compositions from orbit. While this technique has led to important discoveries, such as the deposits of hydrogen at the Moon and Mars, a limitation is its poor spatial resolution. For omni-directional neutron sensors, spatial resolutions are 1–1.5 times the spacecraft's altitude above the planetary surface (or 40–600 km for typical orbital altitudes). Neutron sensors with enhanced spatial resolution have been proposed, and one with a collimated field of view is scheduled to fly on a mission to measure lunar polar hydrogen. No quantitative studies or analyses have been published that evaluate in detail the detection and sensitivity limits of spatially resolved neutron measurements. Here, we describe two complementary techniques for evaluating the hydrogen sensitivity of spatially resolved neutron sensors: an analytic, closed-form expression that has been validated with Lunar Prospector neutron data, and a three-dimensional modeling technique. The analytic technique, called the Spatially resolved Neutron Analytic Sensitivity Approximation (SNASA), provides a straightforward method to evaluate spatially resolved neutron data from existing instruments as well as to plan for future mission scenarios. We conclude that the existing detector—the Lunar Exploration Neutron Detector (LEND)—scheduled to launch on the Lunar Reconnaissance Orbiter will have hydrogen sensitivities that are over an order of magnitude poorer than previously estimated. We further conclude that a sensor with a geometric factor of ∼ 100 cm2 Sr (compared to the LEND geometric factor of ∼ 10.9 cm2 Sr) could make substantially improved measurements of the lunar polar hydrogen spatial distribution. Key Words: Planetary instrumentation—Planetary science—Moon—Spacecraft experiments—Hydrogen. Astrobiology 10, 183–200. PMID:20298147

Ultraviolet Light-Assisted Copper Oxide Nanowires Hydrogen Gas Sensor

NASA Astrophysics Data System (ADS)

Sihar, Nabihah; Tiong, Teck Yaw; Dee, Chang Fu; Ooi, Poh Choon; Hamzah, Azrul Azlan; Mohamed, Mohd Ambri; Majlis, Burhanuddin Yeop

2018-05-01

We fabricated copper oxide nanowires (CuO NWs) ultraviolet (UV) light-assisted hydrogen gas sensor. The fabricated sensor shows promising sensor response behavior towards 100 ppm of H2 at room temperature and elevated temperature at 100 °C when exposed to UV light (3.0 mW/cm2). One hundred-cycle device stability test has been performed, and it is found that for sample elevated at 100 °C, the UV-activated sample achieved stability in the first cycle as compared to the sample without UV irradiation which needed about 10 cycles to achieve stability at the initial stage, whereas the sample tested at room temperature was able to stabilize with the aid of UV irradiation. This indicates that with the aid of UV light, after some "warming up" time, it is possible for the conventional CuO NW sensor which normally work at elevated temperature to function at room temperature because UV source is speculated to play a dominant role to increase the interaction of the surface of CuO NWs and hydrogen gas molecules absorbed after the light exposure.

Combustion Products Monitor: Trade Study Testing

NASA Technical Reports Server (NTRS)

Wallace, William T.; Trowbridge, John B.

2011-01-01

Current combustion products monitoring on the International Space Station (ISS) uses a handheld device (Compound Specific Analyzer-Combustion Products, CSA-CP) containing electrochemical sensors used to measure the concentration of carbon monoxide (CO), hydrogen chloride (HCl), hydrogen cyanide (HCN), and oxygen (O2). The CO sensor in this device accounts for a well-known cross-sensitivity with hydrogen (H2), which is important, as ISS air can contain up to 100 ppm H2. Unfortunately, this current device is being discontinued, and due to space constraints, the new model cannot accommodate the size of the current CO sensor. Therefore, a trade study was conducted in order to determine which CO sensors on the market were available with compensation for H2, and which instruments used these sensors, while also measuring HCN, O2, and carbon dioxide (CO2). The addition of CO2 to the device is helpful, as current monitoring of this gas requires a second hand-held monitor. By providing a device that will monitor both combustion products and CO2, volume and up-mass can be reduced as these monitors are delivered to ISS.

Ultraviolet Light-Assisted Copper Oxide Nanowires Hydrogen Gas Sensor.

PubMed

Sihar, Nabihah; Tiong, Teck Yaw; Dee, Chang Fu; Ooi, Poh Choon; Hamzah, Azrul Azlan; Mohamed, Mohd Ambri; Majlis, Burhanuddin Yeop

2018-05-15

We fabricated copper oxide nanowires (CuO NWs) ultraviolet (UV) light-assisted hydrogen gas sensor. The fabricated sensor shows promising sensor response behavior towards 100 ppm of H 2 at room temperature and elevated temperature at 100 °C when exposed to UV light (3.0 mW/cm 2 ). One hundred-cycle device stability test has been performed, and it is found that for sample elevated at 100 °C, the UV-activated sample achieved stability in the first cycle as compared to the sample without UV irradiation which needed about 10 cycles to achieve stability at the initial stage, whereas the sample tested at room temperature was able to stabilize with the aid of UV irradiation. This indicates that with the aid of UV light, after some "warming up" time, it is possible for the conventional CuO NW sensor which normally work at elevated temperature to function at room temperature because UV source is speculated to play a dominant role to increase the interaction of the surface of CuO NWs and hydrogen gas molecules absorbed after the light exposure.

Remarkably Enhanced Room-Temperature Hydrogen Sensing of SnO₂ Nanoflowers via Vacuum Annealing Treatment.

PubMed

Liu, Gao; Wang, Zhao; Chen, Zihui; Yang, Shulin; Fu, Xingxing; Huang, Rui; Li, Xiaokang; Xiong, Juan; Hu, Yongming; Gu, Haoshuang

2018-03-23

In this work, SnO₂ nanoflowers synthesized by a hydrothermal method were employed as hydrogen sensing materials. The as-synthesized SnO₂ nanoflowers consisted of cuboid-like SnO₂ nanorods with tetragonal structures. A great increase in the relative content of surface-adsorbed oxygen was observed after the vacuum annealing treatment, and this increase could have been due to the increase in surface oxygen vacancies serving as preferential adsorption sites for oxygen species. Annealing treatment resulted in an 8% increase in the specific surface area of the samples. Moreover, the conductivity of the sensors decreased after the annealing treatment, which should be attributed to the increase in electron scattering around the defects and the compensated donor behavior of the oxygen vacancies due to the surface oxygen adsorption. The hydrogen sensors of the annealed samples, compared to those of the unannealed samples, exhibited a much higher sensitivity and faster response rate. The sensor response factor and response rate increased from 27.1% to 80.2% and 0.34%/s to 1.15%/s, respectively. This remarkable enhancement in sensing performance induced by the annealing treatment could be attributed to the larger specific surface areas and higher amount of surface-adsorbed oxygen, which provides a greater reaction space for hydrogen. Moreover, the sensors with annealed SnO₂ nanoflowers also exhibited high selectivity towards hydrogen against CH₄, CO, and ethanol.

Low-Dimensional Palladium Nanostructures for Fast and Reliable Hydrogen Gas Detection

PubMed Central

Noh, Jin-Seo; Lee, Jun Min; Lee, Wooyoung

2011-01-01

Palladium (Pd) has received attention as an ideal hydrogen sensor material due to its properties such as high sensitivity and selectivity to hydrogen gas, fast response, and operability at room temperature. Interestingly, various Pd nanostructures that have been realized by recent developments in nanotechnologies are known to show better performance than bulk Pd. This review highlights the characteristic properties, issues, and their possible solutions of hydrogen sensors based on the low-dimensional Pd nanostructures with more emphasis on Pd thin films and Pd nanowires. The finite size effects, relative strengths and weaknesses of the respective Pd nanostructures are discussed in terms of performance, manufacturability, and practical applicability. PMID:22346605

Hydrogen gas sensing feature of polyaniline/titania (rutile) nanocomposite at environmental conditions

NASA Astrophysics Data System (ADS)

Milani Moghaddam, Hossain; Nasirian, Shahruz

2014-10-01

The resistance-based sensors of polyaniline/titania (rutile) nanocomposite (TPNC) were prepared by spin coating technique onto an epoxy glass substrate with Cu-interdigited electrodes to study their hydrogen (H2) gas sensing features. Our findings are that the change of the surface morphology, porosity and wt% of titania in TPNCs have a significant effect on H2 gas sensing of sensors. All of the sensors had a reproducibility response toward 0.8 vol% H2 gas at room temperature, air pressure and 50% relative humidity. A sensor with 40 wt% of titania nanoparticles had better response/recovery time and the response than other sensors. Moreover, H2 gas sensing mechanism of TPNC sensors based contact areas and the correlation of energy levels between PANI chains and the titania grains were studied.

Arrays of Regenerated Fiber Bragg Gratings in Non-Hydrogen-Loaded Photosensitive Fibers for High-Temperature Sensor Networks

PubMed Central

Lindner, Eric; Chojetztki, Christoph; Brueckner, Sven; Becker, Martin; Rothhardt, Manfred; Vlekken, Johan; Bartelt, Hartmut

2009-01-01

We report about the possibility of using regenerated fiber Bragg gratings generated in photosensitive fibers without applying hydrogen loading for high temperature sensor networks. We use a thermally induced regenerative process which leads to a secondary increase in grating reflectivity. This refractive index modification has shown to become more stable after the regeneration up to temperatures of 600 °C. With the use of an interferometric writing technique, it is possible also to generate arrays of regenerated fiber Bragg gratings for sensor networks. PMID:22408510

Process for forming silicon carbide films and microcomponents

DOEpatents

Hamza, A.V.; Balooch, M.; Moalem, M.

1999-01-19

Silicon carbide films and microcomponents are grown on silicon substrates at surface temperatures between 900 K and 1700 K via C{sub 60} precursors in a hydrogen-free environment. Selective crystalline silicon carbide growth can be achieved on patterned silicon-silicon oxide samples. Patterned SiC films are produced by making use of the high reaction probability of C{sub 60} with silicon at surface temperatures greater than 900 K and the negligible reaction probability for C{sub 60} on silicon dioxide at surface temperatures less than 1250 K. 5 figs.

Process for forming silicon carbide films and microcomponents

DOEpatents

Hamza, Alex V.; Balooch, Mehdi; Moalem, Mehran

1999-01-01

Silicon carbide films and microcomponents are grown on silicon substrates at surface temperatures between 900 K and 1700 K via C.sub.60 precursors in a hydrogen-free environment. Selective crystalline silicon carbide growth can be achieved on patterned silicon-silicon oxide samples. Patterned SiC films are produced by making use of the high reaction probability of C.sub.60 with silicon at surface temperatures greater than 900 K and the negligible reaction probability for C.sub.60 on silicon dioxide at surface temperatures less than 1250 K.

Investigation of a para-ortho hydrogen reactor for application to spacecraft sensor cooling

NASA Technical Reports Server (NTRS)

Nast, T. C.

1983-01-01

The utilization of solid hydrogen in space for sensor and instrument cooling is a very efficient technique for long term cooling or for cooling at high heat rates. The solid hydrogen can provide temperatures as low as 7 to 8 K to instruments. Vapor cooling is utilized to reduce parasitic heat inputs to the 7 to 8 K stage and is effective in providing intermediate cooling for instrument components operating at higher temperatures. The use of solid hydrogen in place of helium may lead to weight reductions as large as a factor of ten and an attendent reduction in system volume. The results of an investigation of a catalytic reactor for use with a solid hydrogen cooling system is presented. Trade studies were performed on several configurations of reactor to meet the requirements of high reactor efficiency with low pressure drop. Results for the selected reactor design are presented for both liquid hydrogen systems operating at near atmospheric pressure and the solid hydrogen cooler operating as low as 1 torr.

Chemical Gas Sensors for Aeronautic and Space Applications

NASA Technical Reports Server (NTRS)

Hunter, Gary W.; Chen, Liang-Yu; Neudeck, Philip G.; Knight, Dak; Liu, Chung-Chiun; Wu, Quing-Hai; Zhou, Huan-Jun

1997-01-01

Aeronautic and space applications require the development of chemical sensors with capabilities beyond those of commercially available sensors. Two areas of particular interest are safety monitoring and emission monitoring. In safety monitoring, detection of low concentrations of hydrogen at potentially low temperatures is important while for emission monitoring the detection of nitrogen oxides, hydrogen, hydrocarbons and oxygen is of interest. This paper discusses the needs of aeronautic and space applications and the point-contact sensor technology being developed to address these needs. The development of these sensors is based on progress in two types of technology: (1) Micromachining and microfabrication technology to fabricate miniaturized sensors. (2) The development of high temperature semiconductors, especially silicon carbide. The detection of each type of gas involves its own challenges in the fields of materials science and fabrication technology. The number of dual-use commercial applications of this microfabricated gas sensor technology make this general area of sensor development a field of significant interest.

AIN-Based Packaging for SiC High-Temperature Electronics

NASA Technical Reports Server (NTRS)

Savrun, Ender

2004-01-01

Packaging made primarily of aluminum nitride has been developed to enclose silicon carbide-based integrated circuits (ICs), including circuits containing SiC-based power diodes, that are capable of operation under conditions more severe than can be withstood by silicon-based integrated circuits. A major objective of this development was to enable packaged SiC electronic circuits to operate continuously at temperatures up to 500 C. AlN-packaged SiC electronic circuits have commercial potential for incorporation into high-power electronic equipment and into sensors that must withstand high temperatures and/or high pressures in diverse applications that include exploration in outer space, well logging, and monitoring of nuclear power systems. This packaging embodies concepts drawn from flip-chip packaging of silicon-based integrated circuits. One or more SiC-based circuit chips are mounted on an aluminum nitride package substrate or sandwiched between two such substrates. Intimate electrical connections between metal conductors on the chip(s) and the metal conductors on external circuits are made by direct bonding to interconnections on the package substrate(s) and/or by use of holes through the package substrate(s). This approach eliminates the need for wire bonds, which have been the most vulnerable links in conventional electronic circuitry in hostile environments. Moreover, the elimination of wire bonds makes it possible to pack chips more densely than was previously possible.

Characterization Test Report for the Mnemonics-UCS Wireless Surface Acoustic Wave Sensor System

NASA Technical Reports Server (NTRS)

Duncan, Joshua J.; Youngquist, Robert C.

2013-01-01

The scope of this testing includes the Surface Acoustic Wave Sensor System delivered to KSC: two interrogator (transceiver) systems, four temperature sensors, with wooden mounting blocks, two antennas, two power supplies, network cables, and analysis software. Also included are a number of additional temperature sensors and newly-developed hydrogen sensors

Influence of interfacial shear strength on the mechanical properties of SiC fiber reinforced reaction-bonded silicon nitride matrix composites

NASA Technical Reports Server (NTRS)

Bhatt, Ramakrishna T.

1990-01-01

The influence of fiber/matrix interface microstructure and interfacial shear strength on the mechanical properties of a fiber-reinforced ceramic composite was evaluated. The composite consisted of approximately 30 vol percent uniaxially aligned 142 microns diameter SiC fibers (Textron SCS-6) in a reaction-bonded Si3N4 matrix (SiC/RBSN). The interface microstructure was varied by controlling the composite fabrication conditions and by heat treating the composite in an oxidizing environment. Interfacial shear strength was determined by the matrix crack spacing method. The results of microstructural examination indicate that the carbon-rich coating provided with the as-produced SiC fibers was stable in composites fabricated at 1200 C in a nitrogen or in a nitrogen plus 4 percent hydrogen mixture for 40 hr. However this coating degraded in composites fabricated at 1350 C in N2 + 4 percent H2 for 40 and 72 hr and also in composites heat treated in an oxidizing environment at 600 C for 100 hr after fabrication at 1200 C in a nitrogen. It was determined that degradation occurred by carbon removal which in turn had a strong influence on interfacial shear strength and other mechanical properties. Specifically, as the carbon coating was removed, the composite interfacial shear strength, primary elastic modulus, first matrix cracking stress, and ultimate tensile strength decreased, but the first matrix cracking strain remained nearly the same.

A portable gas sensor based on cataluminescence.

PubMed

Kang, C; Tang, F; Liu, Y; Wu, Y; Wang, X

2013-01-01

We describe a portable gas sensor based on cataluminescence. Miniaturization of the gas sensor was achieved by using a miniature photomultiplier tube, a miniature gas pump and a simple light seal. The signal to noise ratio (SNR) was considered as the evaluation criteria for the design and testing of the sensor. The main source of noise was from thermal background. Optimal working temperature and flow rate were determined experimentally from the viewpoint of improvement in SNR. A series of parameters related to analytical performance was estimated. The limitation of detection of the sensor was 7 ppm (SNR = 3) for ethanol and 10 ppm (SNR = 3) for hydrogen sulphide. Zirconia and barium carbonate were respectively selected as nano-sized catalysts for ethanol and hydrogen sulphide. Copyright © 2012 John Wiley & Sons, Ltd.

KSC-05PD-1577

NASA Technical Reports Server (NTRS)

2005-01-01

KENNEDY SPACE CENTER, FLA. Members of the engineering team are meeting in the Launch Control Center to review data and possible troubleshooting plans for the liquid hydrogen tank low-level fuel cut-off sensor. At left is John Muratore, manager of Systems Engineering and Integration for the Space Shuttle Program; Ed Mango, JSC deputy manager of the orbiter project office; and Carol Scott, KSC Integration Manager. The sensor failed a routine prelaunch check during the launch countdown July 13, causing mission managers to scrub Discovery's first launch attempt. The sensor protects the Shuttle's main engines by triggering their shutdown in the event fuel runs unexpectedly low. The sensor is one of four inside the liquid hydrogen section of the External Tank (ET).

A long lifetime chemical sensor: study on fluorescence property of fluorescein isothiocyanate and preparation of pH chemical sensor.

PubMed

Ma, Li Ying; Wang, Huai You; Xie, Hui; Xu, Li Xiao

2004-07-01

The fluorescence property of fluorescein isothiocyanate (FITC) in acid-alkaline medium was studied by spectrofluorimetry. The characteristic of FITC response to hydrogen ion has been examined in acid-alkaline solution. A novel pH chemical sensor was prepared based on the relationship between the relative fluorescence intensity of FITC and pH. The measurement of relative fluorescence intensity was carried out at 362 nm with excitation at 250 nm. The excellent linear relationship was obtained between relative fluorescence intensity and pH in the range of pH 1-5. The linear regression equation of the calibration graph is F = 66.871 + 6.605 pH (F is relative fluorescence intensity), with a correlation coefficient of linear regression of 0.9995. Effects of temperature, concentration of FITC on the response to hydrogen ion had been examined. It was important that this chemical sensor was long lifetime, and the property of response to hydrogen ion was stable for at least 70 days. This pH sensor can be used for measuring pH value in water solution. The accuracy is 0.01 pH unit. The results obtained by the pH sensor agreed with those by the pH meter. Obviously, this pH sensor is potential for determining pH change real time in biological system.

A long lifetime chemical sensor: study on fluorescence property of fluorescein isothiocyanate and preparation of pH chemical sensor

NASA Astrophysics Data System (ADS)

Ma, Li Ying; Wang, Huai You; Xie, Hui; Xu, Li Xiao

2004-07-01

The fluorescence property of fluorescein isothiocyanate (FITC) in acid-alkaline medium was studied by spectrofluorimetry. The characteristic of FITC response to hydrogen ion has been examined in acid-alkaline solution. A novel pH chemical sensor was prepared based on the relationship between the relative fluorescence intensity of FITC and pH. The measurement of relative fluorescence intensity was carried out at 362 nm with excitation at 250 nm. The excellent linear relationship was obtained between relative fluorescence intensity and pH in the range of pH 1-5. The linear regression equation of the calibration graph is F=66.871+6.605 pH ( F is relative fluorescence intensity), with a correlation coefficient of linear regression of 0.9995. Effects of temperature, concentration of FITC on the response to hydrogen ion had been examined. It was important that this chemical sensor was long lifetime, and the property of response to hydrogen ion was stable for at least 70 days. This pH sensor can be used for measuring pH value in water solution. The accuracy is 0.01 pH unit. The results obtained by the pH sensor agreed with those by the pH meter. Obviously, this pH sensor is potential for determining pH change real time in biological system.

Application of Flexible Micro Temperature Sensor in Oxidative Steam Reforming by a Methanol Micro Reformer

PubMed Central

Lee, Chi-Yuan; Lee, Shuo-Jen; Shen, Chia-Chieh; Yeh, Chuin-Tih; Chang, Chi-Chung; Lo, Yi-Man

2011-01-01

Advances in fuel cell applications reflect the ability of reformers to produce hydrogen. This work presents a flexible micro temperature sensor that is fabricated based on micro-electro-mechanical systems (MEMS) technology and integrated into a flat micro methanol reformer to observe the conditions inside that reformer. The micro temperature sensor has higher accuracy and sensitivity than a conventionally adopted thermocouple. Despite various micro temperature sensor applications, integrated micro reformers are still relatively new. This work proposes a novel method for integrating micro methanol reformers and micro temperature sensors, subsequently increasing the methanol conversion rate and the hydrogen production rate by varying the fuel supply rate and the water/methanol ratio. Importantly, the proposed micro temperature sensor adequately controls the interior temperature during oxidative steam reforming of methanol (OSRM), with the relevant parameters optimized as well. PMID:22319407

Hydrogen Sensors Using Nitride-Based Semiconductor Diodes: The Role of Metal/Semiconductor Interfaces

PubMed Central

Irokawa, Yoshihiro

2011-01-01

In this paper, I review my recent results in investigating hydrogen sensors using nitride-based semiconductor diodes, focusing on the interaction mechanism of hydrogen with the devices. Firstly, effects of interfacial modification in the devices on hydrogen detection sensitivity are discussed. Surface defects of GaN under Schottky electrodes do not play a critical role in hydrogen sensing characteristics. However, dielectric layers inserted in metal/semiconductor interfaces are found to cause dramatic changes in hydrogen sensing performance, implying that chemical selectivity to hydrogen could be realized. The capacitance-voltage (C–V) characteristics reveal that the work function change in the Schottky metal is not responsible mechanism for hydrogen sensitivity. The interface between the metal and the semiconductor plays a critical role in the interaction of hydrogen with semiconductor devises. Secondly, low-frequency C–V characterization is employed to investigate the interaction mechanism of hydrogen with diodes. As a result, it is suggested that the formation of a metal/semiconductor interfacial polarization could be attributed to hydrogen-related dipoles. In addition, using low-frequency C–V characterization leads to clear detection of 100 ppm hydrogen even at room temperature where it is hard to detect hydrogen by using conventional current-voltage (I–V) characterization, suggesting that low-frequency C–V method would be effective in detecting very low hydrogen concentrations. PMID:22346597

Graphene-based quantum Hall resistance standards grown by chemical vapor deposition on silicon carbide

NASA Astrophysics Data System (ADS)

Ribeiro-Palau, Rebeca; Lafont, Fabien; Kazazis, Dimitris; Michon, Adrien; Couturaud, Olivier; Consejo, Christophe; Jouault, Benoit; Poirier, Wilfrid; Schopfer, Felicien

2015-03-01

Replace GaAs-based quantum Hall resistance standards (GaAs-QHRS) by a more convenient one, based on graphene (Gr-QHRS), is an ongoing goal in metrology. The new Gr-QHRS are expected to work in less demanding experimental conditions than GaAs ones. It will open the way to a broad dissemination of quantum standards, potentially towards industrial end-users, and it will support the implementation of a new International System of Units based on fixed fundamental constants. Here, we present accurate quantum Hall resistance measurements in large graphene Hall bars, grown by the hybrid scalable technique of propane/hydrogen chemical vapor deposition (CVD) on silicon carbide (SiC). This new Gr-QHRS shows a relative accuracy of 1 ×10-9 of the Hall resistance under the lowest magnetic field ever achieved in graphene. These experimental conditions surpass those of the most wildely used GaAs-QHRS. These results confirm the promises of graphene for resistance metrology applications and emphasizes the quality of the graphene produced by the CVD on SiC for applications as demanding as the resistance metrology.

Structural and magnetic properties of nanocomposite iron-containing SiCxNy films

NASA Astrophysics Data System (ADS)

Pushkarev, R. V.; Fainer, N. I.; Maurya, K. K.

2017-02-01

New ferromagnetic films with composition SiCxNyFez were synthesized using chemical vapor deposition technique. Films were deposited using ferrocene, 1,1,1,3,3,3-hexamethyldisilazane (HMDS) and hydrogen gaseous mixture. Chemical and phase composition of the films were studied by FTIR, Raman spectroscopy and X-ray diffraction with grazing incidence (GI-XRD). FTIR spectra analysis confirmed the existence of Si-C and Si-N bonds. Graphite inclusions and amorphous carbon were determined by Raman spectra analysis. The surface of the SiCxNyFez films studied by SEM is covered by nanocrystallites of iron oxide Fe3O4 phase. The main purpose of GI-XRD analysis is to describe the layered structure of the films in detail. It was shown by GI-XRD study, that phase composition of the SiCxNyFez films varies from iron oxide Fe3O4 to iron silicide Fe3Si and silicon carbide SiC with the deposition temperature growing. It was established, that SiCxNyFez films are perspective for application in the spintronic field.

Method and Pd/V2 O5 device for H2 detection

DOEpatents

Liu, Ping [San Diego, CA; Tracy, C Edwin [Golden, CO; Pitts, J Roland [Lakewood, CO; Smith, II, R. Davis; Lee, Se-Hee [Lakewood, CO

2011-12-27

Methods and Pd/V.sub.2O.sub.5 devices for hydrogen detection are disclosed. An exemplary method of preparing an improved sensor for chemochromic detection of hydrogen gas over a wide response range exhibits stability during repeated coloring/bleaching cycles upon exposure and removal of hydrogen gas. The method may include providing a substrate. The method may also include depositing a V.sub.20.sub.5 layer that functions as a H.sub.2 insertion host in a Pd/V.sub.20.sub.5 hydrogen sensor to be formed on said substrate. The method may also include depositing a Pd layer onto said V.sub.20.sub.5 layer; said Pd layer functioning as an optical modulator.

Catalytic hydrogen sensing using microheated platinum nanoparticle-loaded graphene aerogel

DOE PAGES

Harley-Trochimczyk, Anna; Chang, Jiyoung; Zhou, Qin; ...

2014-10-02

We present that low power catalytic hydrogen sensors are fabricated by functionalizing low power polysilicon microheaters with platinum nanoparticle catalyst loaded in a high surface area graphene aerogel support. Fabrication and characterization of the polysilicon microheaters are described. The platinum nanoparticle-loaded graphene aerogel is characterized by transmission electron microscopy, scanning electron microscopy, and energy dispersive X-ray spectroscopy. Finally, the catalytic hydrogen sensors consume as little as 2.2 mW of power, have sensitivity of 1.6%/10,000 ppm hydrogen, a t90 response and recovery time of 0.97 s and 0.72 s, respectively, a lower detection limit of approximately 65 ppm, and negligible crossmore » sensitivity to methane, n-pentane, and diethylether.« less

Hydrogen sensor based on Sm-doped SnO{sub 2} nanostructures

DOE Office of Scientific and Technical Information (OSTI.GOV)

Singh, Gurpreet; Hastir, Anita; Singh, Ravi Chand, E-mail: ravichand.singh@gmail.com

2016-05-23

In this paper the effect of samarium doping on the structural and hydrogen gas sensing properties of SnO{sub 2} nanoparticles has been reported. X-ray Diffraction (XRD) results revealed tetragonal rutile structure of both undoped and Sm-doped SnO{sub 2} nanoparticles. It has been observed that doping with samarium led to reduction in crystallite size of SnO{sub 2} nanoparticles which was confirmed from XRD analysis. Shifting and broadening of Raman peaks in case of doped nanoparticles has been explained by well-known phonon confinement model. The optimum operable temperature of both the sensors was found to 400 °C and the sensor response towardsmore » hydrogen gas has been improved after doping with samarium which was attributed to increase in sensing sites for the gas adsorption.« less

Anion-selective interaction and colorimeter by an optical metalloreceptor based on ruthenium(II) 2,2'-biimidazole: hydrogen bonding and proton transfer.

PubMed

Cui, Ying; Mo, Hao-Jun; Chen, Jin-Can; Niu, Yan-Li; Zhong, Yong-Rui; Zheng, Kang-Cheng; Ye, Bao-Hui

2007-08-06

A new anion sensor [Ru(bpy)2(H2biim)](PF6)2 (1) (bpy = 2,2'-bipyridine and H2biim = 2,2'-biimidazole) has been developed, in which the Ru(II)-bpy moiety acts as a chromophore and the H2biim ligand as an anion receptor via hydrogen bonding. A systematic investigation shows that 1 is an eligible sensor for various anions. It donates protons for hydrogen bonding to Cl-, Br-, I-, NO3-, HSO4-, H2PO4-, and OAc- anions and further actualizes monoproton transfer to the OAc- anion, changing color from yellow to orange brown. The fluoride ion has a high affinity toward the N-H group of the H2biim ligand for proton transfer, rather than hydrogen bonding, because of the formation of the highly stable HF2- anion, resulting in stepwise deprotonation of the two N-H fragments. These processes are signaled by vivid color changes from yellow to orange brown and then to violet because of second-sphere donor-acceptor interactions between Ru(II)-H2biim and the anions. The significant color changes can be distinguished visually. The processes are not only determined by the basicity of anion but also by the strength of hydrogen bonding and the stability of the anion-receptor complexes. The design strategy and remarkable photophysical properties of sensor 1 help to extend the development of anion sensors.

The 11 Micron Emissions of Carbon Stars

NASA Technical Reports Server (NTRS)

Goebel, J. H.; Cheeseman, P.; Gerbault, F.

1995-01-01

A new classification scheme of the IRAS LRS carbon stars is presented. It comprises the separation of 718 probable carbon stars into 12 distinct self-similar spectral groupings. Continuum temperatures are assigned and range from 470 to 5000 K. Three distinct dust species are identifiable: SiC, alpha:C-H, and MgS. In addition to the narrow 11 + micron emission feature that is commonly attributed to SiC, a broad 11 + micron emission feature, that is correlated with the 8.5 and 7.7 micron features, is found and attributed to alpha:C-H. SiC and alpha:C-H band strengths are found to correlate with the temperature progression among the Classes. We find a spectral sequence of Classes that reflects the carbon star evolutionary sequence of spectral types, or alternatively developmental sequences of grain condensation in carbon-rich circumstellar shells. If decreasing temperature corresponds to increasing evolution, then decreasing temperature corresponds to increasing C/O resulting in increasing amounts of carbon rich dust, namely alpha:C-H. If decreasing the temperature corresponds to a grain condensation sequence, then heterogeneous, or induced nucleation scenarios are supported. SiC grains precede alpha:C-H and form the nuclei for the condensation of the latter material. At still lower temperatures, MgS appears to be quite prevalent. No 11.3 micron PAH features are identified in any of the 718 carbon stars. However, one of the coldest objects, IRAS 15048-5702, and a few others, displays an 11.9 micron emission feature characteristic of laboratory samples of coronene. That feature corresponds to the C-H out of plane deformation mode of aromatic hydrocarbon. This band indicates the presence of unsaturated, sp(sup 3), hydrocarbon bonds that may subsequently evolve into saturated bonds, sp(sup 2), if, and when, the star enters the planetary nebulae phase of stellar evolution. The effusion of hydrogen from the hydrocarbon grain results in the evolution in wavelength of this 11.9 micron emission feature to the 11.3 micron feature.

Human corneal epithelial cell shedding and fluorescein staining in response to silicone hydrogel lenses and contact lens disinfecting solutions.

PubMed

Gorbet, Maud; Peterson, Rachael; McCanna, David; Woods, Craig; Jones, Lyndon; Fonn, Desmond

2014-03-01

A pilot study was conducted to evaluate human corneal epithelial cell shedding in response to wearing a silicone hydrogel contact lens/solution combination inducing corneal staining. The nature of ex vivo collected cells staining with fluorescein was also examined. A contralateral eye study was conducted in which up to eight participants were unilaterally exposed to a multipurpose contact lens solution/silicone hydrogel lens combination previously shown to induce corneal staining (renu® fresh™ and balafilcon A; test eye), with the other eye using a combination of balafilcon A soaked in a hydrogen peroxide care system (Clear Care®; control eye). Lenses were worn for 2, 4 or 6 hours. Corneal staining was graded after lens removal. The Ocular Surface Cell Collection Apparatus was used to collect cells from the cornea and the contact lens. In the test eye, maximum solution-induced corneal staining (SICS) was observed after 2 hours of lens wear (reducing significantly by 4 hours; p < 0.001). There were significantly more cells collected from the test eye after 4 hours of lens wear when compared to the control eye and the collection from the test eye after 2 hours (for both; n = 5; p < 0.001). The total cell yield at 4 hours was 813 ± 333 and 455 ± 218 for the test and control eyes, respectively (N = 5, triplicate, p = 0.003). A number of cells were observed to have taken up the fluorescein dye from the initial fluorescein instillation. Confocal microscopy of fluorescein-stained cells revealed that fluorescein was present throughout the cell cytoplasm and was retained in the cells for many hours after recovery from the corneal surface. This pilot study indicates that increased epithelial cell shedding was associated with a lens-solution combination which induces SICS. Our data provides insight into the transient nature of the SICS reaction and the nature of fluorescein staining observed in SICS.

The 11 Micron Emissions of Cabon Stars

NASA Technical Reports Server (NTRS)

Goebel, J. H.; Cheeseman, P.; Gerbault, F.

1995-01-01

A new classification scheme of the IRAS LRS carbon stars is presented. It comprises the separation of 718 probable carbon stars into 12 distinct self-similar spectral groupings. Continuum temperatures are assigned and range from 470 to 5000 K. Three distinct dust species are identifiable: SiC, alpha:C-H, and MgS. In addition to the narrow 11 + micron emission feature that is commonly attributed to SiC, a broad 11 + micron emission feature, that is correlated with the 8.5 and 7.7 micron features, is found and attributed to alpha:C-H. SiC and alpha:C-H band strengths are found to correlate with the temperature progression among the Classes. We find a spectral sequence of Classes that reflects the carbon star evolutionary sequence of spectral types, or alternatively developmental sequences of grain condensation in carbon-rich circumstellar shells. If decreasing temperature corresponds to increasing evolution, then decreasing temperature corresponds to increasing CIO resulting in increasing amounts of carbon rich dust, namely alpha:C-H. If decreasing the temperature corresponds to a grain condensation sequence, then heterogeneous, or induced nucleation scenarios are supported. SiC grains precede alpha:C-H and form the nuclei for the condensation of the latter material. At still lower temperatures, MgS appears to be quite prevalent. No 11.3 micron PAH features are identified in any of the 718 carbon stars. However, one of the coldest objects, IRAS 15048-5702, and a few others, displays an 11.9 micron emission feature characteristic of laboratory samples of coronene. That feature corresponds to the C-H out of plane deformation mode of aromatic hydrocarbon. This band indicates the presence of unsaturated, sp(sup 3), hydrocarbon bonds that may subsequently evolve into saturated bonds, sp(sup 2), if, and when, the star enters the planetary nebulae phase of stellar evolution. The effusion of hydrogen from the hydrocarbon grain results in the evolution in wavelength of this 11.9 micron emission feature to the 11.3 micron feature.

Electrodepositing behaviors and properties of nano Fe-Ni-Cr/SiC composite coatings from trivalent chromium baths containing compound carboxylate-urea system.

PubMed

He, Xinkuai; Hou, Bailong; Cai, Youxing; Li, Chen; Jiang, Yumei; Wu, Luye

2013-06-01

The nano Fe-Ni-Cr/SiC composite coatings were prepared using pulse electrodeposition method from trivalent chromium baths containing compound carboxylate-urea system and nano SiC in ultrasonic field. The effects of the carboxylate-urea system on the nano Fe-Ni-Cr/SiC composite coatings have been investigated. These results indicated that the SiC and Cr contents and the thickness of the Fe-Ni-Cr/SiC composite coatings could be obviously improved by the compound carboxylate-urea system. The steady-state polarization curves showed that the hydrogen evolution reaction (HER) could be significantly inhibited by the compound carboxylate-urea system, which was benefit to increase the SiC and Cr contents and the thickness of the composite coatings. The cyclic voltammetry (CV) curves showed that the cathodic polarization of the matrix metal ions could be increased in the bath containing the compound carboxylate-urea system. Thus, a compact Fe-Ni-Cr/SiC composite coating could be obtained using this technique. The surface morphology of the Fe-Ni-Cr/SiC composite coatings checked with the scanning electron micrographs (SEM) showed that the surface smoothness could be also improved and the microcracks and pinholes could be decreased due to the presence of the compound carboxylate-urea system. The phase composition of the as-posited coating was measured by the X-ray diffraction (XRD). XRD data showed that the as-posited coating was Fe-Ni-Cr/SiC composite coating. The chemical composition of the coating was investigated by energy dispersive spectrum (EDS) analysis. The result showed the functional Fe-Ni-Cr/SiC composite coatings with 4.1 wt.% SiC and 25.1 wt.% Cr, and 23.9 microm thickness were obtained in this study, which had best corrosion resistance according to the results of the typical potentiodynamic polarization curves of the Fe-Ni-Cr/SiC composite coatings.

KSC-05PD-1575

NASA Technical Reports Server (NTRS)

2005-01-01

KENNEDY SPACE CENTER, FLA. The gate is open to Launch Pad 39B where Space Shuttle Discovery remains on the pad after scrub of Return to Flight mission STS-114. The July 13 mission was scrubbed when a low-level fuel cut-off sensor for the liquid hydrogen tank inside the External Tank failed a routine prelaunch check during the countdown July 13, causing mission managers to scrub Discovery's first launch attempt. The sensor protects the Shuttle's main engines by triggering their shutdown in the event fuel runs unexpectedly low. The sensor is one of four inside the liquid hydrogen section of the External Tank (ET).

Flow line sampler

DOEpatents

Nicholls, Colin I.

1992-07-14

An on-line product sampling apparatus and method for measuring product samples from a product stream (12) in a flow line (14) having a sampling aperture (11), includes a sampling tube (18) for containing product samples removed from flow line (14). A piston (22) removes product samples from the product stream (12) through the sampling aperture (11) and returns samples to product stream (12). A sensor (20) communicates with sample tube (18), and senses physical properties of samples while the samples are within sample tube (18). In one embodiment, sensor (20) comprises a hydrogen transient nuclear magnetic resonance sensor for measuring physical properties of hydrogen molecules.

Methanol, ethanol and hydrogen sensing using metal oxide and metal (TiO(2)-Pt) composite nanoclusters on GaN nanowires: a new route towards tailoring the selectivity of nanowire/nanocluster chemical sensors.

PubMed

Aluri, Geetha S; Motayed, Abhishek; Davydov, Albert V; Oleshko, Vladimir P; Bertness, Kris A; Sanford, Norman A; Mulpuri, Rao V

2012-05-04

We demonstrate a new method for tailoring the selectivity of chemical sensors using semiconductor nanowires (NWs) decorated with metal and metal oxide multicomponent nanoclusters (NCs). Here we present the change of selectivity of titanium dioxide (TiO(2)) nanocluster-coated gallium nitride (GaN) nanowire sensor devices on the addition of platinum (Pt) nanoclusters. The hybrid sensor devices were developed by fabricating two-terminal devices using individual GaN NWs followed by the deposition of TiO(2) and/or Pt nanoclusters (NCs) using the sputtering technique. This paper present the sensing characteristics of GaN/(TiO(2)-Pt) nanowire-nanocluster (NWNC) hybrids and GaN/(Pt) NWNC hybrids, and compare their selectivity with that of the previously reported GaN/TiO(2) sensors. The GaN/TiO(2) NWNC hybrids showed remarkable selectivity to benzene and related aromatic compounds, with no measurable response for other analytes. Addition of Pt NCs to GaN/TiO(2) sensors dramatically altered their sensing behavior, making them sensitive only to methanol, ethanol and hydrogen, but not to any other chemicals we tested. The GaN/(TiO(2)-Pt) hybrids were able to detect ethanol and methanol concentrations as low as 100 nmol mol(-1) (ppb) in air in approximately 100 s, and hydrogen concentrations from 1 µmol mol(-1) (ppm) to 1% in nitrogen in less than 60 s. However, GaN/Pt NWNC hybrids showed limited sensitivity only towards hydrogen and not towards any alcohols. All these hybrid sensors worked at room temperature and are photomodulated, i.e. they responded to analytes only in the presence of ultraviolet (UV) light. We propose a qualitative explanation based on the heat of adsorption, ionization energy and solvent polarity to explain the observed selectivity of the different hybrids. These results are significant from the standpoint of applications requiring room-temperature hydrogen sensing and sensitive alcohol monitoring. These results demonstrate the tremendous potential for tailoring the selectivity of the hybrid nanosensors for a multitude of environmental and industrial sensing applications.

Color Changing Hydrogen Sensors

NASA Technical Reports Server (NTRS)

Roberson, Luke B.; Williams, Martha; Captain, Janine E.; Mohajeri, Nahid; Raissi, Ali

2015-01-01

During the Space Shuttle Program, one of the most hazardous operation that occurred was the loading of liquid hydrogen (LH2) during fueling operations of the spacecraft. Due to hydrogen's low explosive limit, any amount leaked could lead to catastrophic event. Hydrogen's chemical properties make it ideal as a rocket fuel; however, the fuel is deemed unsafe for most commercial use because of the inability to easily detect the gas leaking. The increased use of hydrogen over traditional fossil fuels would reduce greenhouse gases and America's dependency on foreign oil. Therefore a technology that would improve safety at NASA and in the commercial sector while creating a new economic sector would have a huge impact to NASA's mission. The Chemochromic Detector for sensing hydrogen gas leakage is a color-changing detector that is useful in any application where it is important to know not only the presence but also the location of the hydrogen gas leak. This technology utilizes a chemochromicpigment and polymer matrix that can be molded or spun into rigid or pliable shapes useable in variable temperature environments including atmospheres of inert gas, hydrogen gas, or mixtures of gases. A change in color of the detector material indicates where gaseous hydrogen leaks are occurring. The irreversible sensor has a dramatic color change from beige to dark grey and remains dark grey after exposure. A reversible pigment changes from white to blue in the presence of hydrogen and reverts back to white in the presence of oxygen. Both versions of the sensor's pigments were comprised of a mixture of a metal oxide substrate and a hydro-chromic compound (i.e., the compound that changed color in the presence of hydrogen) and immediately notified the operator of the presence of low levels of hydrogen. The detector can be used in a variety of formats including paint, tape, caulking, injection molded parts, textiles and fabrics, composites, and films. This technology brings numerous benefits over the traditional hydrogen sensors: The technology has excellent temperature stability (4K to 373 K), it can be used in cryogenic fluid applications, it is easy to apply and remove; it requires no power to operate; it has a quick response time; the leak points can be detected visually or electronically; it is nonhazardous, thus environmentally friendly; it can be reversible or irreversible; it does not require on-site monitoring; has a long shelf life; the detector is very durable; and the technology is inexpensive to manufacture.

Bis-ureidoquinoline as a selective fluoride anion sensor through hydrogen-bond interactions.

PubMed

Jo, Yunhee; Chidalla, Nagesh; Cho, Dong-Gyu

2014-10-03

Bis-ureidoquinoline shows a characteristic UV-vis absorbance and turn-on fluorescence changes in the presence of the fluoride anion. Such selective changes probably originate from the hydrogen-bond interactions, as shown by the (1)H NMR titration and DFT calculations. Bis-ureidoquinoline can be used as a fluoride-selective sensor for the detection of fluoride anions under illumination from a laboratory hand-held UV lamp.

Automated Hydrogen Gas Leak Detection System

NASA Technical Reports Server (NTRS)

1995-01-01

The Gencorp Aerojet Automated Hydrogen Gas Leak Detection System was developed through the cooperation of industry, academia, and the Government. Although the original purpose of the system was to detect leaks in the main engine of the space shuttle while on the launch pad, it also has significant commercial potential in applications for which there are no existing commercial systems. With high sensitivity, the system can detect hydrogen leaks at low concentrations in inert environments. The sensors are integrated with hardware and software to form a complete system. Several of these systems have already been purchased for use on the Ford Motor Company assembly line for natural gas vehicles. This system to detect trace hydrogen gas leaks from pressurized systems consists of a microprocessor-based control unit that operates a network of sensors. The sensors can be deployed around pipes, connectors, flanges, and tanks of pressurized systems where leaks may occur. The control unit monitors the sensors and provides the operator with a visual representation of the magnitude and locations of the leak as a function of time. The system can be customized to fit the user's needs; for example, it can monitor and display the condition of the flanges and fittings associated with the tank of a natural gas vehicle.

The Abundance of SiC2 in Carbon Star Envelopes: Evidence that SiC2 is a gas-phase precursor of SiC dust.

PubMed

Massalkhi, Sarah; Agúndez, M; Cernicharo, J; Velilla Prieto, L; Goicoechea, J R; Quintana-Lacaci, G; Fonfría, J P; Alcolea, J; Bujarrabal, V

2018-03-01

Silicon carbide dust is ubiquitous in circumstellar envelopes around C-rich AGB stars. However, the main gas-phase precursors leading to the formation of SiC dust have not yet been identified. The most obvious candidates among the molecules containing an Si-C bond detected in C-rich AGB stars are SiC 2 , SiC, and Si 2 C. To date, the ring molecule SiC 2 has been observed in a handful of evolved stars, while SiC and Si 2 C have only been detected in the C-star envelope IRC +10216. We aim to study how widespread and abundant SiC 2 , SiC, and Si 2 C are in envelopes around C-rich AGB stars and whether or not these species play an active role as gas-phase precursors of silicon carbide dust in the ejecta of carbon stars. We carried out sensitive observations with the IRAM 30m telescope of a sample of 25 C-rich AGB stars to search for emission lines of SiC 2 , SiC, and Si 2 C in the λ 2 mm band. We performed non-LTE excitation and radiative transfer calculations based on the LVG method to model the observed lines of SiC 2 and to derive SiC 2 fractional abundances in the observed envelopes. We detect SiC 2 in most of the sources, SiC in about half of them, and do not detect Si 2 C in any source, at the exception of IRC +10216. Most of these detections are reported for the first time in this work. We find a positive correlation between the SiC and SiC 2 line emission, which suggests that both species are chemically linked, the SiC radical probably being the photodissociation product of SiC 2 in the external layer of the envelope. We find a clear trend in which the denser the envelope, the less abundant SiC 2 is. The observed trend is interpreted as an evidence of efficient incorporation of SiC 2 onto dust grains, a process which is favored at high densities owing to the higher rate at which collisions between particles take place. The observed behavior of a decline in the SiC 2 abundance with increasing density strongly suggests that SiC 2 is an important gas-phase precursor of SiC dust in envelopes around carbon stars.

Stress Analysis of Silicon Carbide Microelectromechanical Systems Using Raman Spectroscopy

DTIC Science & Technology

2003-03-01

conformally coated with SiC[2]...........................4 2.1: Silicon carbide grinding stones or “carborundum” [1...open up contact areas to SiC-2 (mask SiC2_SiC3_VIA). Then, a 1.5 µm- thick SiC “cap” layer (SiC-3) is deposited. Note that the SiC-3 conformally coats ...84 5.2: Surface profile across the teeth of a SiC3 comb drive...........................................85 xi

Silicon Carbide-Based Hydrogen and Hydrocarbon Gas Detection

NASA Technical Reports Server (NTRS)

Hunter, Gary W.; Neudeck, Philip G.; Chen, Liang-Yu; Knight, D.; Liu, C. C.; Wu, Q. H.R

1995-01-01

Hydrogen and hydrocarbon detection in aeronautical applications is important for reasons of safety and emissions control. The use of silicon carbide as a semiconductor in a metal-semiconductor or metal-insulator-semiconductor structure opens opportunities to measure hydrogen and hydrocarbons in high temperature environments beyond the capabilities of silicon-based devices. The purpose of this paper is to explore the response and stability of Pd-SiC Schottky diodes as gas sensors in the temperature range from 100 to 400 C. The effect of heat treating on the diode properties as measured at 100 C is explored. Subsequent operation at 400 C demonstrates the diodes' sensitivity to hydrogen and hydrocarbons. It is concluded that the Pd-SiC Schottky diode has potential as a hydrogen and hydrocarbon sensor over a wide range of temperatures but further studies are necessary to determine the diodes' long term stability.

High spatial resolution fiber optical sensors for simultaneous temperature and chemical sensing for energy industries

NASA Astrophysics Data System (ADS)

Yan, Aidong; Huang, Sheng; Li, Shuo; Zaghloul, Mohamed; Ohodnicki, Paul; Buric, Michael; Chen, Kevin P.

2017-05-01

This paper demonstrates optical fibers as high-temperature sensor platforms. Through engineering and onfiber integration of functional metal oxide sensory materials, we report the development of an integrated sensor solution to perform temperature and chemical measurements for high-temperature energy applications. Using the Rayleigh optical frequency domain reflectometry (OFDR) distributed sensing scheme, the temperature and hydrogen concentration were measured along the fiber. To overcome the weak Rayleighbackscattering intensity exhibited by conventional optical fibers, an ultrafast laser was used to enhance the Rayleigh scattering by a direct laser writing method. Using the Rayleigh-enhanced fiber as sensor platform, both temperature and hydrogen reaction were monitored at high temperature up to 750°C with 4-mm spatial resolution.

Miniaturized Metal (Metal Alloy)/PdO(x)/SiC Hydrogen and Hydrocarbon Gas Sensors

NASA Technical Reports Server (NTRS)

Hunter, Gary W. (Inventor); Xu, Jennifer C. (Inventor); Lukco, Dorothy (Inventor)

2008-01-01

A miniaturized Schottky diode hydrogen and hydrocarbon sensor and the method of making same is disclosed and claimed. The sensor comprises a catalytic metal layer, such as palladium, a silicon carbide substrate layer and a thin barrier layer in between the catalytic and substrate layers made of palladium oxide (PdO(x)). This highly stable device provides sensitive gas detection at temperatures ranging from at least 450 to 600 C. The barrier layer prevents reactions between the catalytic metal layer and the substrate layer. Conventional semiconductor fabrication techniques are used to fabricate the small-sided sensors. The use of a thicker palladium oxide barrier layer for other semiconductor structures such as a capacitor and transistor structures is also disclosed.

The Abundance of SiC2 in Carbon Star Envelopes⋆: Evidence that SiC2 is a gas-phase precursor of SiC dust

PubMed Central

Massalkhi, Sarah; Agúndez, M.; Cernicharo, J.; Velilla Prieto, L.; Goicoechea, J. R.; Quintana-Lacaci, G.; Fonfría, J. P.; Alcolea, J.; Bujarrabal, V.

2017-01-01

Context Silicon carbide dust is ubiquitous in circumstellar envelopes around C-rich AGB stars. However, the main gas-phase precursors leading to the formation of SiC dust have not yet been identified. The most obvious candidates among the molecules containing an Si–C bond detected in C-rich AGB stars are SiC2, SiC, and Si2C. To date, the ring molecule SiC2 has been observed in a handful of evolved stars, while SiC and Si2C have only been detected in the C-star envelope IRC +10216. Aims We aim to study how widespread and abundant SiC2, SiC, and Si2C are in envelopes around C-rich AGB stars and whether or not these species play an active role as gas-phase precursors of silicon carbide dust in the ejecta of carbon stars. Methods We carried out sensitive observations with the IRAM 30m telescope of a sample of 25 C-rich AGB stars to search for emission lines of SiC2, SiC, and Si2C in the λ 2 mm band. We performed non-LTE excitation and radiative transfer calculations based on the LVG method to model the observed lines of SiC2 and to derive SiC2 fractional abundances in the observed envelopes. Results We detect SiC2 in most of the sources, SiC in about half of them, and do not detect Si2C in any source, at the exception of IRC +10216. Most of these detections are reported for the first time in this work. We find a positive correlation between the SiC and SiC2 line emission, which suggests that both species are chemically linked, the SiC radical probably being the photodissociation product of SiC2 in the external layer of the envelope. We find a clear trend in which the denser the envelope, the less abundant SiC2 is. The observed trend is interpreted as an evidence of efficient incorporation of SiC2 onto dust grains, a process which is favored at high densities owing to the higher rate at which collisions between particles take place. Conclusions The observed behavior of a decline in the SiC2 abundance with increasing density strongly suggests that SiC2 is an important gas-phase precursor of SiC dust in envelopes around carbon stars. PMID:29628518

Effect of SiC particle size on the microstructure and properties of cold-sprayed Al/SiCp composite coating

NASA Astrophysics Data System (ADS)

Yu, Min; Hua, Junwei

2017-07-01

The Al5056/SiC composite coatings were prepared by cold spraying. Experimental results show that the SiC content in the composite coating deposited with the SiC powder having an average size of 67 μm (Al5056/SiC-67) is similar to that deposited with the SiC powder having an average size of 27 μm (Al5056/SiC-27). The microhardness and cohesion strength of Al5056/SiC-67 coating are higher than those of the Al5056/SiC-27 coating. In addition, the Al5056/SiC-67 coating having a superior wear resistance because of the coarse SiC powder with a superior kinetic energy contributes to the deformation resistance of the matrix Al5056 particles.

Modification of the amorphous carbon films by the ns-laser irradiation

NASA Astrophysics Data System (ADS)

Grigonis, Alfonsas; Marcinauskas, Liutauras; Vinciunaite, Vinga; Raciukaitis, Gediminas

2011-10-01

The effect of a nanosecond laser irradiation of thin (60 and 145 nm) amorphous, diamond-like carbon films deposited on Si substrate by an ion beam deposition (IBD) from pure acetylene and acetylene/hydrogen (1:2) gas mixture was analyzed in this work. The films were irradiated with the infrared (IR) and ultraviolet (UV) radiation of the nanosecond Nd:YAG lasers working at the first (1.16 eV) and the third (3.48 eV) harmonics, using a multi-shot regime. The IR laser irradiation stimulated a minor increase in the fraction of sp2 bonds, causing a slight decrease in the hardness of the films and initiated SiC formation. Irradiation with the UV laser caused the formation of carbides and increased hydrogenization of the Si substrate and the fraction of sp2 sites. Spalliation and ablation were observed at a higher energy density and with a large number of laser pulses per spot.

Improved Reliability of SiC Pressure Sensors for Long Term High Temperature Applications

NASA Technical Reports Server (NTRS)

Okojie, R. S.; Nguyen, V.; Savrun, E.; Lukco, D.

2011-01-01

We report advancement in the reliability of silicon carbide pressure sensors operating at 600 C for extended periods. The large temporal drifts in zero pressure offset voltage at 600 C observed previously were significantly suppressed to allow improved reliable operation. This improvement was the result of further enhancement of the electrical and mechanical integrity of the bondpad/contact metallization, and the introduction of studded bump bonding on the pad. The stud bump contact promoted strong adhesion between the Au bond pad and the Au die-attach. The changes in the zero offset voltage and bridge resistance over time at temperature were explained by the microstructure and phase changes within the contact metallization, that were analyzed with Auger electron spectroscopy (AES) and field emission scanning electron microscopy (FE-SEM).

A dual-phase microstructural approach to damage and fracture of Ti3SiC2/SiC joints

NASA Astrophysics Data System (ADS)

Nguyen, Ba Nghiep; Henager, Charles H.; Kurtz, Richard J.

2018-02-01

The microcracking mechanisms responsible for Ti3SiC2/SiC joint damage observed at the macroscopic scale after neutron irradiation experiments are investigated in detail. A dual-phase microstructural approach to damage and fracture of Ti3SiC2/SiC joints is developed that uses a finely discretized two-phase domain based on a digital image of an actual microstructure involving embedded Ti3SiC2 and SiC phases. The behaviors of SiC and Ti3SiC2 in the domain are described by the continuum damage mechanics (CDM) model reported in Nguyen et al., J. Nucl. Mater., 2017, 495:504-515. This CDM model describes microcracking damage in brittle ceramics caused by thermomechanical loading and irradiation-induced swelling. The dual-phase microstructural model is applied to predict the microcracking mechanisms occurring in a typical Ti3SiC2/SiC joint subjected to heating to 800 °C followed by irradiation-induced swelling at this temperature and cooling to room temperature after the applied swelling has reached the maximum swelling levels observed in the experiments for SiC and Ti3SiC2. The model predicts minor damage of the joint after heating but significant microcracking in the SiC phase and along the boundaries between SiC and Ti3SiC2 as well as along the bonding joint during irradiation-induced swelling and cooling to room temperature. These predictions qualitatively agree with the limited experimental observations of joint damage at this irradiation temperature.

The study of hydrogen peroxide level under cisplatin action using genetically encoded sensor hyper

NASA Astrophysics Data System (ADS)

Belova, A. S.; Orlova, A. G.; Maslennikova, A. V.; Brilkina, A. A.; Balalaeva, I. V.; Antonova, N. O.; Mishina, N. M.; Shakhova, N. M.; Belousov, V. V.

2014-03-01

The aim of the work was to study the participation of hydrogen peroxide in reaction of cervical cancer cell line HeLa Kyoto on cisplatin action. Determination of hydrogen peroxide level was performed using genetically encoded fluorescent sensor HyPer2. The dependence of cell viability on cisplatin concentration was determined using MTT assay. Mechanisms of cell death as well as HyPer2 reaction was revealed by flow cytometry after 6-hours of incubation with cisplatin in different concentrations. Cisplatin used in low concentrations had no effect on hydrogen peroxide level in HeLa Kyoto cells. Increase of HyPer2 fluorescence was detected only after exposure with cisplatin in high concentration. The reaction was not the consequence of cell death.

Development of a Hydrogen Gas Sensor Using a Double Saw Resonator System at Room Temperature

PubMed Central

Yunusa, Zainab; Hamidon, Mohd Nizar; Ismail, Alyani; Isa, Maryam Mohd; Yaacob, Mohd Hanif; Rahmanian, Saeed; Ibrahim, Siti Azlida; Shabaneh, Arafat A.A

2015-01-01

A double SAW resonator system was developed as a novel method for gas sensing applications. The proposed system was investigated for hydrogen sensing. Commercial Surface Acoustic Wave (SAW) resonators with resonance frequencies of 433.92 MHz and 433.42 MHz were employed in the double SAW resonator system configuration. The advantages of using this configuration include its ability for remote measurements, and insensitivity to vibrations and other external disturbances. The sensitive layer is composed of functionalized multiwalled carbon nanotubes and polyaniline nanofibers which were deposited on pre-patterned platinum metal electrodes fabricated on a piezoelectric substrate. This was mounted into the DSAWR circuit and connected in parallel. The sensor response was measured as the difference between the resonance frequencies of the SAW resonators, which is a measure of the gas concentration. The sensor showed good response towards hydrogen with a minimum detection limit of 1%. PMID:25730480

Note: Durability analysis of optical fiber hydrogen sensor based on Pd-Y alloy film.

PubMed

Huang, Peng-cheng; Chen, You-ping; Zhang, Gang; Song, Han; Liu, Yi

2016-02-01

The Pd-Y alloy sensing film has an excellent property for hydrogen detection, but just for one month, the sensing film's property decreases seriously. To study the failure of the sensing film, the XPS spectra analysis was used to explore the chemical content of the Pd-Y alloy film, and analysis results demonstrate that the yttrium was oxidized. The paper presented that such an oxidized process was the potential reason of the failure of the sensing film. By understanding the reason of the failure of the sensing film better, we could improve the manufacturing process to enhance the property of hydrogen sensor.

A Leak Monitor for Industry

NASA Technical Reports Server (NTRS)

1996-01-01

GenCorp Aerojet Industrial Products, Lewis Research Center, Marshall Space Flight Center, and Case Western Reserve University developed a gas leak detection system, originally for use with the Space Shuttle propulsion system and reusable launch vehicles. The Model HG200 Automated Gas Leak Detection System has miniaturized sensors that can identify extremely low concentrations of hydrogen without requiring oxygen. A microprocessor-based hardware/software system monitors the sensors and displays the source and magnitude of hydrogen leaks in real time. The system detects trace hydrogen around pipes, connectors, flanges and pressure tanks, and has been used by Ford Motor Company in the production of a natural gas-powered car.

Abundance of SiC2 in carbon star envelopes

NASA Astrophysics Data System (ADS)

Massalkhi, S.; Agúndez, M.; Cernicharo, J.; Velilla Prieto, L.; Goicoechea, J. R.; Quintana-Lacaci, G.; Fonfría, J. P.; Alcolea, J.; Bujarrabal, V.

2018-03-01

Context. Silicon carbide dust is ubiquitous in circumstellar envelopes around C-rich asymptotic giant branch (AGB) stars. However, the main gas-phase precursors leading to the formation of SiC dust have not yet been identified. The most obvious candidates among the molecules containing an Si-C bond detected in C-rich AGB stars are SiC2, SiC, and Si2C. To date, the ring molecule SiC2 has been observed in a handful of evolved stars, while SiC and Si2C have only been detected in the C-star envelope IRC +10216. Aim. We aim to study how widespread and abundant SiC2, SiC, and Si2C are in envelopes around C-rich AGB stars, and whether or not these species play an active role as gas-phase precursors of silicon carbide dust in the ejecta of carbon stars. Methods: We carried out sensitive observations with the IRAM 30 m telescope of a sample of 25 C-rich AGB stars to search for emission lines of SiC2, SiC, and Si2C in the λ 2 mm band. We performed non-LTE excitation and radiative transfer calculations based on the LVG method to model the observed lines of SiC2 and to derive SiC2 fractional abundances in the observed envelopes. Results: We detect SiC2 in most of the sources, SiC in about half of them, and do not detect Si2C in any source except IRC +10216. Most of these detections are reported for the first time in this work. We find a positive correlation between the SiC and SiC2 line emission, which suggests that both species are chemically linked; the SiC radical is probably the photodissociation product of SiC2 in the external layer of the envelope. We find a clear trend where the denser the envelope, the less abundant SiC2 is. The observed trend is interpreted as evidence of efficient incorporation of SiC2 onto dust grains, a process that is favored at high densities owing to the higher rate at which collisions between particles take place. Conclusions: The observed behavior of a decline in the SiC2 abundance with increasing density strongly suggests that SiC2 is an important gas-phase precursor of SiC dust in envelopes around carbon stars. Based on observations carried out with the IRAM 30 m Telescope. IRAM is supported by INSU/CNRS (France), MPG (Germany), and IGN (Spain).

Development and Application of Microfabricated Chemical Gas Sensors For Aerospace Applications

NASA Technical Reports Server (NTRS)

Hunter, G. W.; Neudeck, P. G.; Fralick, G.; Thomas, V.; Liu, C. C.; Wu, Q. H.; Sawayda, M. S.; Jin, A.; Hammond, J.; Makel, D.;

Properties of Hydrogen Sulfide Sensors Based on Thin Films of Tin Dioxide and Tungsten Trioxide

NASA Astrophysics Data System (ADS)

Sevastianov, E. Yu.; Maksimova, N. K.; Chernikov, E. V.; Sergeichenko, N. V.; Rudov, F. V.

2016-12-01

The effect of hydrogen sulfide in the concentration range of 0-100 ppm on the characteristics of thin films of tin dioxide and tungsten trioxide obtained by the methods of magnetron deposition and modified with gold in the bulk and on the surface is studied. The impurities of antimony and nickel have been additionally introduced into the SnO2 bulk. An optimal operating temperature of sensors 350°C was determined, at which there is a satisfactory correlation between the values of the response to H2S and the response time. Degradation of the sensor characteristics is investigated in the long-term ( 0.5-1.5 years) tests at operating temperature and periodic exposure to hydrogen sulfide, as well as after conservation of samples in the laboratory air. It is shown that for the fabrication of H2S sensors, the most promising are thin nanocrystalline Au/WO3:Au films characterized by a linear concentration dependence of the response and high stability of parameters during exploitation.

Genetically encoded proton sensors reveal activity-dependent pH changes in neurons.

PubMed

Raimondo, Joseph V; Irkle, Agnese; Wefelmeyer, Winnie; Newey, Sarah E; Akerman, Colin J

2012-01-01

The regulation of hydrogen ion concentration (pH) is fundamental to cell viability, metabolism, and enzymatic function. Within the nervous system, the control of pH is also involved in diverse and dynamic processes including development, synaptic transmission, and the control of network excitability. As pH affects neuronal activity, and can also itself be altered by neuronal activity, the existence of tools to accurately measure hydrogen ion fluctuations is important for understanding the role pH plays under physiological and pathological conditions. Outside of their use as a marker of synaptic release, genetically encoded pH sensors have not been utilized to study hydrogen ion fluxes associated with network activity. By combining whole-cell patch clamp with simultaneous two-photon or confocal imaging, we quantified the amplitude and time course of neuronal, intracellular, acidic transients evoked by epileptiform activity in two separate in vitro models of temporal lobe epilepsy. In doing so, we demonstrate the suitability of three genetically encoded pH sensors: deGFP4, E(2)GFP, and Cl-sensor for investigating activity-dependent pH changes at the level of single neurons.

Hydrogen and oxygen sensor development

NASA Technical Reports Server (NTRS)

Farber, E. A.; Mahig, J.; Schaeper, H. R. A.

1972-01-01

A reliable and low cost gas sensor was investigated for instantaneously detecting H2 in N2, H2 in air, and O2 in N2. The major portion of the research was spent in developing a sensor which would instantaneously detect H2 to + or - 50 ppm even in the presence of trace amounts of other gases. The experimental procedures used to provide the performance characteristics for the various oscillators are discussed describing the equipment with help of schematics and photographs where applicable. The resulting performance is given in graphical form. In some cases both hydrogen and helium may be present and since both of them effect gas sensors similarly, a method was found to determine the concentration of each. The methods developed are grouped into the following four broad categories: pure metal response, variation in heat conductivity, reduction methods, and exotic processes. From the above it was decided for the present to use a copper oxide reduction process as this process was demonstrated to be capable of determining the concentrations of hydrogen and helium respectively in a gas mixture with air or nitrogen.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Fang, Kuan-Chung; Chu, Chia-Ho; Hsu, Chen-Pin

In this study, a cost-effective and highly sensitive cholesterol microsensor, which is consisted of cholesterol oxidase (ChOx), horseradish peroxidase (HRP), and polyaniline (PANI), was developed based on the enzyme-induced conductivity change of PANI with fast response. Hydrogen peroxide is produced via the reaction between cholesterol and ChOx, which was immobilized in a dialysis membrane. The produced hydrogen peroxide can oxidize HRP, which can be reduced by oxidizing PANI, thus resulting in decreased conductivity of the polyaniline thin film. The reduced HRP can be oxidized again by hydrogen peroxide and the cycle of the oxidation/reduction continues until all hydrogen peroxide aremore » reacted, leading to the high sensitivity of the sensor due to the signal contributed from all hydrogen peroxide molecules. Cholesterol was detected near the physiological concentrations ranging from 100 mg/dl to 400 mg/dl with the cholesterol microsensors. The results show linear relation between cholesterol concentration and the conductivity change of the PANI. The microsensor showed no response to cholesterol when the PANI was standalone without cholesterol oxidase immobilized, indicating that the enzymatic reaction is required for cholesterol detection. The simple process of the sensor fabrication allows the sensor to be cost-effective and disposable usage. This electronic cholesterol microsensor is promising for point-of-care health monitoring in cholesterol level with low cost and fast response.« less

A dual-phase microstructural approach to damage and fracture of Ti 3SiC 2/SiC joints

DOE Office of Scientific and Technical Information (OSTI.GOV)

Nguyen, Ba Nghiep; Henager, Charles H.; Kurtz, Richard J.

We investigate the microcracking mechanisms responsible for Ti 3SiC 2/SiC joint damage observed at the macroscopic scale after neutron irradiation experiments in detail. A dual-phase microstructural approach to damage and fracture of Ti 3SiC 2/SiC joints is developed that uses a finely discretized two-phase domain based on a digital image of an actual microstructure involving embedded Ti 3SiC 2 and SiC phases. The behaviors of SiC and Ti 3SiC 2 in the domain are described by the continuum damage mechanics (CDM) model reported in Nguyen et al., J. Nucl. Mater., 2017, 495:504–515. This CDM model describes microcracking damage in brittlemore » ceramics caused by thermomechanical loading and irradiation-induced swelling. The dual-phase microstructural model is applied to predict the microcracking mechanisms occurring in a typical Ti 3SiC 2/SiC joint subjected to heating to 800 °C followed by irradiation-induced swelling at this temperature and cooling to room temperature after the applied swelling has reached the maximum swelling levels observed in the experiments for SiC and Ti 3SiC 2. The model predicts minor damage of the joint after heating but significant microcracking in the SiC phase and along the boundaries between SiC and Ti 3SiC 2 as well as along the bonding joint during irradiation-induced swelling and cooling to room temperature. Our predictions qualitatively agree with the limited experimental observations of joint damage at this irradiation temperature.« less

A dual-phase microstructural approach to damage and fracture of Ti 3SiC 2/SiC joints

DOE PAGES

Nguyen, Ba Nghiep; Henager, Charles H.; Kurtz, Richard J.

2017-12-05

We investigate the microcracking mechanisms responsible for Ti 3SiC 2/SiC joint damage observed at the macroscopic scale after neutron irradiation experiments in detail. A dual-phase microstructural approach to damage and fracture of Ti 3SiC 2/SiC joints is developed that uses a finely discretized two-phase domain based on a digital image of an actual microstructure involving embedded Ti 3SiC 2 and SiC phases. The behaviors of SiC and Ti 3SiC 2 in the domain are described by the continuum damage mechanics (CDM) model reported in Nguyen et al., J. Nucl. Mater., 2017, 495:504–515. This CDM model describes microcracking damage in brittlemore » ceramics caused by thermomechanical loading and irradiation-induced swelling. The dual-phase microstructural model is applied to predict the microcracking mechanisms occurring in a typical Ti 3SiC 2/SiC joint subjected to heating to 800 °C followed by irradiation-induced swelling at this temperature and cooling to room temperature after the applied swelling has reached the maximum swelling levels observed in the experiments for SiC and Ti 3SiC 2. The model predicts minor damage of the joint after heating but significant microcracking in the SiC phase and along the boundaries between SiC and Ti 3SiC 2 as well as along the bonding joint during irradiation-induced swelling and cooling to room temperature. Our predictions qualitatively agree with the limited experimental observations of joint damage at this irradiation temperature.« less

A Dual Sensor for pH and Hydrogen Peroxide Using Polymer-Coated Optical Fibre Tips.

PubMed

Purdey, Malcolm S; Thompson, Jeremy G; Monro, Tanya M; Abell, Andrew D; Schartner, Erik P

2015-12-17

This paper demonstrates the first single optical fibre tip probe for concurrent detection of both hydrogen peroxide (H₂O₂) concentration and pH of a solution. The sensor is constructed by embedding two fluorophores: carboxyperoxyfluor-1 (CPF1) and seminaphtharhodafluor-2 (SNARF2) within a polymer matrix located on the tip of the optical fibre. The functionalised fibre probe reproducibly measures pH, and is able to accurately detect H₂O₂ over a biologically relevant concentration range. This sensor offers potential for non-invasive detection of pH and H₂O₂ in biological environments using a single optical fibre.

Development of Fe-based superconducting wires for liquid-hydrogen level sensors

NASA Astrophysics Data System (ADS)

Ishida, S.; Tsuchiya, Y.; Mawatari, Y.; Eisaki, H.; Nakano, A.; Yoshida, Y.

2017-07-01

We developed liquid-hydrogen (LH2) level sensors with Ba(Fe1-x Co x )2As2 superconducting wires (Co-Ba122 wires) as their detection elements. We fabricated Co-Ba122 wires with different Co concentrations x by using the powder-in-tube method. The superconducting transition temperatures of the wires were successfully controlled in the range of 20-25 K by changing x from 0.06 to 0.10. The resistance-temperature curves of the wires exhibited sharp superconducting transitions with widths of 0.5-1.0 K. In addition, we performed an operation test of the Co-Ba122 level sensors with LH2. Close correspondence between the output resistance and the actual LH2 level was observed for a sensor equipped with x = 0.09 wire, demonstrating that this sensor can accurately measure LH2 levels.

Erosion and strength degradation of biomorphic SiC.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Martinez-Fernandez, J.; de Arellano-Lopez, A. R; Varela-Feria, F. M.

2004-05-01

Solid-particle-erosion studies were conducted on biomorphic SiC based on eucalyptus and pine, reaction-bonded (RB) SiC, and hot-pressed (HP) SiC. The erodents were angular SiC abrasives of average diameter 63, 143, or 390 {mu}m and the impact velocity was 100 m s{sup -1}. Impact occurred at normal incidence. Material loss in all targets occurred by brittle fracture. The biomorphic specimens eroded by formation of both lateral and radial cracks and their erosion rates were higher than both conventional SiCs. The RB SiC eroded as a classic brittle material, by formation and propagation of lateral cracks. The HP SiC, the hardest target,more » was the most erosion resistant. In erosion of the HP SiC, the abrasive particles, especially the largest ones, fragmented upon impact. The resulting dissipation of energy led to relatively low erosion rates. Flexural strength before and after erosion was measured for the biomorphic eucalyptus, RB SiC, and HP SiC. Erosion damage reduced the flexural strengths of all of the specimens. The relative strength reductions were lowest for the biomorphic eucalyptus and highest for the HP SiC. The hot-pressed SiC responded as predicted by accepted models of impact damage in brittle solids. The responses of the biomorphic and reaction-bonded SiC specimens were modeled as if they consisted of only SiC and porosity. This approximation agreed reasonably well with observed degradations of strength.« less

Shuttle propellant loading instrumenation development

NASA Technical Reports Server (NTRS)

Hamlet, J.

1975-01-01

A continuous capacitance sensor was developed and an analog signal conditioner was evaluated to demonstrate the acceptability of these items for use in the space shuttle propellant loading system. An existing basic sensor concept was redesigned to provide capability for cryogenic operation, to improve performance, and to minimize production costs. Sensor development verification consisted of evaluation of sensor linearity, cryogenic performance, and stability during vibration. The signal conditioner evaluation consisted mainly of establishing the effects of the variations in temperature and cable parameters and evaluating the stability. A sensor linearity of 0.04 in. was achieved over most of the sensor length. The sensor instability caused by vibration was 0.04 percent. The cryogenic performance data show a maximum instability of 0.19 percent at liquid hydrogen temperature; a theoretical calibration can be computed a within 1 percent. The signal conditioner evaluation showed that, with temperature compensation, all error sources typically contribute much less than 1 percent. An estimate of the accuracy achievable with the sensor and signal conditioner shows an rss estimate of 0.75 in. for liquid oxygen and 1.02 in. for liquid hydrogen. These are approximately four times better than the shuttle requirements. Comparison of continuous sensor and discrete sensor performance show the continuous sensor to be significantly better when there is surface activity due to sloshing, boiling, or other disturbances.

KSC-05PD-1592

NASA Technical Reports Server (NTRS)

2005-01-01

KENNEDY SPACE CENTER, FLA. Media gather in the television studio at the NASA News Center to hear members of the Mission Management Team reveal aspects of the troubleshooting and testing being done on the liquid hydrogen tank low-level fuel cut-off sensor. On the stage at right are (from left) Wayne Hale, Space Shuttle deputy program manager; John Muratore, manager of Systems Engineering and Integration for the Space Shuttle Program; and Mike Wetmore, director of Space Shuttle Processing. The sensor failed a routine prelaunch check during the launch countdown July 13, causing mission managers to scrub Discovery's first launch attempt. The sensor protects the Shuttle's main engines by triggering their shutdown in the event fuel runs unexpectedly low. The sensor is one of four inside the liquid hydrogen section of the External Tank (ET).

Novel fluorescent pH sensor based on coumarin with piperazine and imidazole substituents.

PubMed

Saleh, Na'il; Al-Soud, Yaseen A; Nau, Werner M

2008-12-01

A new coumarin derivative containing piperazine and imidazole moieties is reported as a fluorophore for hydrogen ions sensing. The fluorescence enhancement of the studied sensor with an increase in hydrogen ions concentration is based on the hindering of photoinduced electron transfer from the piperazinyl amine and the imidazolyl amine to the coumarin fluorophore by protonation. The presented sensor has a novel design of fluorophore-spacer-receptor(1)-receptor(2) format, which is proposed to sense two ranges of pH (from 2.5 to 5.5) and (from 10 to 12) instead of sensing one pH range. A model compound, in which the piperazinyl ring is absent, was synthesized as well to confirm the novel pH sensing of the proposed sensor.

A widely tunable, near-infrared laser-based trace gas sensor for hydrogen cyanide (HCN) detection in exhaled breath

NASA Astrophysics Data System (ADS)

Azhar, M.; Mandon, J.; Neerincx, A. H.; Liu, Z.; Mink, J.; Merkus, P. J. F. M.; Cristescu, S. M.; Harren, F. J. M.

2017-11-01

A compact, cost-effective sensor is developed for detection of hydrogen cyanide (HCN) in exhaled breath within seconds. For this, an off-axis integrated cavity output spectroscopy setup is combined with a widely tunable compact near-infrared laser (tunability 1527-1564 nm). For HCN a detection sensitivity has been obtained of 8 ppbv in nitrogen (within 1 s), equal to a noise equivalent absorption sensitivity of 1.9 × 10-9 cm-1 Hz-1/2. With this sensor we demonstrated the presence of HCN in exhaled breath; its detection could be a good indicator for bacterial lung infection. Due to its compact, cost-effective and user-friendly design, this laser-based sensor has the potential to be implemented in future clinical applications.

Miniaturized metal (metal alloy)/ PdO.sub.x/SiC hydrogen and hydrocarbon gas sensors

NASA Technical Reports Server (NTRS)

Hunter, Gary W. (Inventor); Xu, Jennifer C. (Inventor); Lukco, Dorothy (Inventor)

2011-01-01

A miniaturized Schottky diode hydrogen and hydrocarbon sensor and the method of making same is disclosed and claimed. The sensor comprises a catalytic metal layer, such as palladium, a silicon carbide substrate layer and a thin barrier layer in between the catalytic and substrate layers made of palladium oxide (PdO.sub.x ). This highly stable device provides sensitive gas detection at temperatures ranging from at least 450 to 600.degree. C. The barrier layer prevents reactions between the catalytic metal layer and the substrate layer. Conventional semiconductor fabrication techniques are used to fabricate the small-sized sensors. The use of a thicker palladium oxide barrier layer for other semiconductor structures such as a capacitor and transistor structures is also disclosed.

Miniaturized metal (metal alloy)/ PdO.sub.x/SiC hydrogen and hydrocarbon gas sensors

NASA Technical Reports Server (NTRS)

Xu, Jennifer C. (Inventor); Hunter, Gary W. (Inventor); Lukco, Dorothy (Inventor)

2008-01-01

A miniaturized Schottky diode hydrogen and hydrocarbon sensor and the method of making same is disclosed and claimed. The sensor comprises a catalytic metal layer, such as palladium, a silicon carbide substrate layer and a thin barrier layer in between the catalytic and substrate layers made of palladium oxide (PdO.sub.x). This highly stable device provides sensitive gas detection at temperatures ranging from at least 450 to 600.degree. C. The barrier layer prevents reactions between the catalytic metal layer and the substrate layer. Conventional semiconductor fabrication techniques are used to fabricate the small-sized sensors. The use of a thicker palladium oxide barrier layer for other semiconductor structures such as a capacitor and transistor structures is also disclosed.

Perovskite-type oxide thin film integrated fiber optic sensor for high-temperature hydrogen measurement.

PubMed

Tang, Xiling; Remmel, Kurtis; Lan, Xinwei; Deng, Jiangdong; Xiao, Hai; Dong, Junhang

2009-09-15

Small size fiber optic devices integrated with chemically sensitive photonic materials are emerging as a new class of high-performance optical chemical sensor that have the potential to meet many analytical challenges in future clean energy systems and environmental management. Here, we report the integration of a proton conducting perovskite oxide thin film with a long-period fiber grating (LPFG) device for high-temperature in situ measurement of bulk hydrogen in fossil- and biomass-derived syngas. The perovskite-type Sr(Ce(0.8)Zr(0.1))Y(0.1)O(2.95) (SCZY) nanocrystalline thin film is coated on the 125 microm diameter LPFG by a facile polymeric precursor route. This fiber optic sensor (FOS) operates by monitoring the LPFG resonant wavelength (lambda(R)), which is a function of the refractive index of the perovskite oxide overcoat. At high temperature, the types and population of the ionic and electronic defects in the SCZY structure depend on the surrounding hydrogen partial pressure. Thus, varying the H(2) concentration changes the SCZY film refractive index and light absorbing characteristics that in turn shifts the lambda(R) of the LPFG. The SCZY-coated LPFG sensor has been demonstrated for bulk hydrogen measurement at 500 degrees C for its sensitivity, stability/reversibility, and H(2)-selectivity over other relevant small gases including CO, CH(4), CO(2), H(2)O, and H(2)S, etc.

Intelligent Chemical Sensor Systems for In-space Safety Applications

NASA Technical Reports Server (NTRS)

Hunter, G. W.; Xu, J. C.; Neudeck, P. G.; Makel, D. B.; Ward, B.; Liu, C. C.

2006-01-01

Future in-space and lunar operations will require significantly improved monitoring and Integrated System Health Management (ISHM) throughout the mission. In particular, the monitoring of chemical species is an important component of an overall monitoring system for space vehicles and operations. For example, in leak monitoring of propulsion systems during launch, inspace, and on lunar surfaces, detection of low concentrations of hydrogen and other fuels is important to avoid explosive conditions that could harm personnel and damage the vehicle. Dependable vehicle operation also depends on the timely and accurate measurement of these leaks. Thus, the development of a sensor array to determine the concentration of fuels such as hydrogen, hydrocarbons, or hydrazine as well as oxygen is necessary. Work has been on-going to develop an integrated smart leak detection system based on miniaturized sensors to detect hydrogen, hydrocarbons, or hydrazine, and oxygen. The approach is to implement Microelectromechanical Systems (MEMS) based sensors incorporated with signal conditioning electronics, power, data storage, and telemetry enabling intelligent systems. The final sensor system will be self-contained with a surface area comparable to a postage stamp. This paper discusses the development of this "Lick and Stick" leak detection system and it s application to In-Space Transportation and other Exploration applications.

Automatic development of normal zone in composite MgB2/CuNi wires with different diameters

NASA Astrophysics Data System (ADS)

Jokinen, A.; Kajikawa, K.; Takahashi, M.; Okada, M.

2010-06-01

One of the promising applications with superconducting technology for hydrogen utilization is a sensor with a magnesium-diboride (MgB2) superconductor to detect the position of boundary between the liquid hydrogen and the evaporated gas stored in a Dewar vessel. In our previous experiment for the level sensor, the normal zone has been automatically developed and therefore any energy input with the heater has not been required for normal operation. Although the physical mechanism for such a property of the MgB2 wire has not been clarified yet, the deliberate application might lead to the realization of a simpler superconducting level sensor without heater system. In the present study, the automatic development of normal zone with increasing a transport current is evaluated for samples consisting of three kinds of MgB2 wires with CuNi sheath and different diameters immersed in liquid helium. The influences of the repeats of current excitation and heat cycle on the normal zone development are discussed experimentally. The aim of this paper is to confirm the suitability of MgB2 wire in a heater free level sensor application. This could lead to even more optimized design of the liquid hydrogen level sensor and the removal of extra heater input.

Investigation on mechanical behavior and material characteristics of various weight composition of SiCp reinforced aluminium metal matrix composite

NASA Astrophysics Data System (ADS)

Pichumani, Sivachidambaram; Srinivasan, Raghuraman; Ramamoorthi, Venkatraman

2018-02-01

Aluminium - silicon carbide (Al - SiC) metal matrix composite is produced with following wt % of SiC reinforcement (4%, 8% & 12%) using stir casting method. Mechanical testing such as micro hardness, tensile testing and bend testing were performed. Characterizations, namely micro structure, X-ray diffraction (XRD) analysis, inductive coupled plasma - optical emission spectroscopy (ICP-OES) and scanning electron microscopy (SEM) analysis, were carried out on Al - SiC composites. The presence of SiC on Al - SiC composite is confirmed through XRD technique and microstructure. The percentage of SiC was confirmed through ICP-OES technique. Increase in weight percentage of SiC tends to increase micro hardness, ultimate strength & yield strength but it reduces the bend strength and elongation (%) of the material. SEM factrography of tensile tested fractured samples of Al - 8% SiC & Al - 12% SiC showed fine dimples on fractured surface & coarse dimples fractured surface respectively. This showed significant fracture differences between Al - 8% SiC & Al - 12% SiC. From the above experiment, Al - 8% SiC had good micro hardness, ultimate strength & yield strength without significant loss in elongation (%) & bend strength.

Electrochemical hydrogen sulfide biosensors.

PubMed

Xu, Tailin; Scafa, Nikki; Xu, Li-Ping; Zhou, Shufeng; Abdullah Al-Ghanem, Khalid; Mahboob, Shahid; Fugetsu, Bunshi; Zhang, Xueji

2016-02-21

The measurement of sulfide, especially hydrogen sulfide, has held the attention of the analytical community due to its unique physiological and pathophysiological roles in biological systems. Electrochemical detection offers a rapid, highly sensitive, affordable, simple, and real-time technique to measure hydrogen sulfide concentration, which has been a well-documented and reliable method. This review details up-to-date research on the electrochemical detection of hydrogen sulfide (ion selective electrodes, polarographic hydrogen sulfide sensors, etc.) in biological samples for potential therapeutic use.

N channel JFET based digital logic gate structure

NASA Technical Reports Server (NTRS)

Krasowski, Michael J. (Inventor)

2010-01-01

A circuit topography is presented which is used to create usable digital logic gates using N (negatively doped) channel Junction Field Effect Transistors (JFETs) and load resistors, level shifting resistors, and supply rails whose values are based on the direct current (DC) parametric distributions of those JFETs. This method has direct application to the current state of the art in high temperature, for example 300.degree. C. to 500.degree. C. and higher, silicon carbide (SiC) device production. The ability to produce inverting and combinatorial logic enables the production of pulse and edge triggered latches. This scale of logic synthesis would bring digital logic and state machine capabilities to devices operating in extremely hot environments, such as the surface of Venus, near hydrothermal vents, within nuclear reactors (SiC is inherently radiation hardened), and within internal combustion engines. The basic logic gate can be configured as a driver for oscillator circuits allowing for time bases and simple digitizers for resistive or reactive sensors. The basic structure of this innovation, the inverter, can be reconfigured into various analog circuit topographies through the use of feedback structures.

2.45 GHz Rectenna Designed for Wireless Sensors Operating at 500 C

NASA Technical Reports Server (NTRS)

Ponchak, George E.; Schwartz, Zachary D.; Jordan, Jennifer L.; Downey, Alan N.; Neudeck, Philip G.

2004-01-01

High temperature wireless sensors that operate at 500 C are required for aircraft engine monitoring and performance improvement These sensors would replace currently used hard-wired sensors and lead to a substantial reduction in mass. However, even if the sensor output data is transmitted wirelessly to a receiver in the cooler part of the engine, and the associated cables are eliminated, DC power cables are still required to operate the sensors and power the wireless circuits. To solve this problem, NASA is developing a rectenna, a circuit that receives RF power and converts it to DC power. The rectenna would be integrated with the wireless sensor, and the RF transmitter that powers the rectenna would be located in the cooler part of the engine. In this way, no cables to or from the sensors are required. Rectennas haw been demonstrated at ambient room temperature, but to date, no high temperature rectennas haw been reported. In this paper, we report the first rectenna designed for 2.45 GHz operation at 500 C. The circuit consists of a microstrip dipole antenna, a stripline impedance matching circuit, and a stripline low pass filter to prevent transmission of higher harmonics created by the rectifying diode fabricated on an Alumina substrate. The rectifying diode is the gate to source junction of a 6H Sic MESFET and the capacitor and load resistor are chip elements that are each bonded to the Alumina substrate. Each element and the hybrid, rectenna circuit haw been characterized through 500 C.

Dimension towers of SICs. I. Aligned SICs and embedded tight frames

NASA Astrophysics Data System (ADS)

Appleby, Marcus; Bengtsson, Ingemar; Dumitru, Irina; Flammia, Steven

2017-11-01

Algebraic number theory relates SIC-POVMs in dimension d > 3 to those in dimension d(d - 2). We define a SIC in dimension d(d - 2) to be aligned to a SIC in dimension d if and only if the squares of the overlap phases in dimension d appear as a subset of the overlap phases in dimension d(d - 2) in a specified way. We give 19 (mostly numerical) examples of aligned SICs. We conjecture that given any SIC in dimension d, there exists an aligned SIC in dimension d(d - 2). In all our examples, the aligned SIC has lower dimensional equiangular tight frames embedded in it. If d is odd so that a natural tensor product structure exists, we prove that the individual vectors in the aligned SIC have a very special entanglement structure, and the existence of the embedded tight frames follows as a theorem. If d - 2 is an odd prime number, we prove that a complete set of mutually unbiased bases can be obtained by reducing an aligned SIC to this dimension.

Influence of calcium on glucose biosensor response and on hydrogen peroxide detection.

PubMed

Labat-Allietta, N; Thévenot, D R

1998-01-01

Of small species capable of reaching a platinum working electrode from biological samples, calcium cations have been found to inhibit significantly glucose biosensor responses. The sensitivities to glucose of sensors immersed in carbonate buffer saline solutions decreased when 0.5 mM calcium chloride was added. The degree of inhibition was proportional to the glucose response in the absence of calcium (0-17% of the normalized current). Likewise, sensor sensitivities to hydrogen peroxide decreased, in the 5-90% range, in the presence of 0.5 mM calcium. Bare Pt-lr wires show a reversible inhibition of hydrogen peroxide sensitivity. This reversible inhibition is directly related to the decrease of hydrogen peroxide oxidation rate at the platinum anode: this has been evidenced, using rotating disk electrodes, by plotting Koutecky-Levich plots. Such inhibition has been found both for free and chelated calcium cations at levels below 1 mM. Several hypotheses for possible reactions between platinum, hydrogen peroxide and calcium are discussed.

Safety Sensor Testing Laboratory | Hydrogen and Fuel Cells | NREL

Science.gov Websites

collaborations, trainings and workshops, and academic research and development support. Work in the laboratory (temperature, pressure, and relative humidity) and gas parameters (flow and composition) Quantitative sensor services to assist end-users on sensor selection and use Assist developers in quantitative assessment of

On-line monitoring of H2 generation and the HTF degradation in parabolic trough solar thermal power plants: Development of an optical sensor based on an innovative approach

NASA Astrophysics Data System (ADS)

Pagola, Iñigo; Funcia, Ibai; Sánchez, Marcelino; Gil, Javier; González-Vallejo, Victoria; Bedoya, Maxi; Orellana, Guillermo

2017-06-01

The work presented in this paper offers a robust, effective and economically competitive method for online detection and monitoring of the presence of molecular hydrogen in the heat transfer fluids of parabolic trough collector plants. The novel method is based on a specific fluorescent sensor according to the ES2425002 patent ("Method for the detection and quantification of hydrogen in a heat transfer fluid").

Free standing graphene oxide film for hydrogen peroxide sensing

NASA Astrophysics Data System (ADS)

Ranjan, Pranay; Balakrishnan, Jayakumar; Thakur, Ajay D.

2018-05-01

We report hydrogen peroxide (H2O2)sensing using free standing graphene oxide thin films prepared using a cost effective scalable approach. Such sensors may find application in pharmaceutical and food processing industries.

Electrical, Chemical, And Microstructural Analysis of the Thermal Stability of Nickel-based Ohmic Contacts to Silicon Carbide for High-Temperature Electronics

NASA Astrophysics Data System (ADS)

Virshup, Ariel R.

With increasing attention on curbing the emission of pollutants into the atmosphere, chemical sensors that can be used to monitor and control these unwanted emissions are in great demand. Examples include monitoring of hydrocarbons from automobile engines and monitoring of flue gases such as CO emitted from power plants. One of the critical limitations in high-temperature SiC gas sensors, however, is the degradation of the metal-SiC contacts over time. In this dissertation, we investigated the high-temperature stability of Pt/TaSix/Ni/SiC ohmic contacts, which have been implemented in SiC-based gas sensors developed for applications in diesel engines and power plants. The high-temperature stability of a Pt/TaSi2/Ni/SiC ohmic contact metallization scheme was characterized using a combination of current-voltage measurements, Auger electron spectroscopy, secondary ion mass spectrometry, and transmission electron microscope imaging and associated analytical techniques. Increasing the thicknesses of the Pt and TaSi2 layers promoted electrical stability of the contacts, which remained ohmic at 600°C in air for over 300 h; the specific contact resistance showed only a gradual increase from an initial value of 5.2 x 10-5 O-cm 2. We observed a continuous silicon-oxide layer in the thinner contact structures, which failed after 36 h of heating. It was found that the interface between TaSix and NiySi was weakened by the accumulation of free carbon (produced by the reaction of Ni and SiC), which in turn facilitated oxygen diffusion from the contact edges. Additional oxygen diffusion occurred along grain boundaries in the Pt overlayer. Meanwhile, thicker contacts, with less interfacial free carbon and enhanced electrical stability contained a much lower oxygen concentration that was distributed across the contact layers, precluding the formation of an electrically insulating contact structure.

Silicon carbide, an emerging high temperature semiconductor

NASA Technical Reports Server (NTRS)

Matus, Lawrence G.; Powell, J. Anthony

1991-01-01

In recent years, the aerospace propulsion and space power communities have expressed a growing need for electronic devices that are capable of sustained high temperature operation. Applications for high temperature electronic devices include development instrumentation within engines, engine control, and condition monitoring systems, and power conditioning and control systems for space platforms and satellites. Other earth-based applications include deep-well drilling instrumentation, nuclear reactor instrumentation and control, and automotive sensors. To meet the needs of these applications, the High Temperature Electronics Program at the Lewis Research Center is developing silicon carbide (SiC) as a high temperature semiconductor material. Research is focussed on developing the crystal growth, characterization, and device fabrication technologies necessary to produce a family of silicon carbide electronic devices and integrated sensors. The progress made in developing silicon carbide is presented, and the challenges that lie ahead are discussed.

Fiber optic microsensor hydrogen leak detection system on Delta IV launch vehicle

NASA Astrophysics Data System (ADS)

Kazemi, Alex A.; Goepp, John W.; Larson, David B.; Wuestling, Mark E.

2008-04-01

This paper describes the successful development and test of a multipoint fiber optic hydrogen microsensors system during the static firing of an Evolved Expandable Launch Vehicle (EELV)/Delta's common booster core (CBC) rocket engine at NASA's Stennis Space Center. The hydrogen sensitive chemistry is fully reversible and has demonstrated a response to hydrogen gas in the range of 0% to 10% with a resolution of 0.1% and a response time of <=5 seconds measured at a gas flow rate of 1 cc/min. The system consisted of a reversible chemical interaction causing a change in reflective of a thin film of coated Palladium. The sensor using a passive element consisting of chemically reactive microcoatings deposited on the surface of a glass microlens, which is then bonded to an optical fiber. The system uses a multiplexing technique with a fiber optic driver-receiver consisting of a modulated LED source that is launched into the sensor, and photodiode detector that synchronously measures the reflected signal. The system incorporates a microprocessor to perform the data analysis and storage, as well as trending and set alarm function. The paper illustrates the sensor design and performance data under field deployment conditions.

Insight into the molecular basis of pathogen abundance: group A Streptococcus inhibitor of complement inhibits bacterial adherence and internalization into human cells.

PubMed

Hoe, Nancy P; Ireland, Robin M; DeLeo, Frank R; Gowen, Brian B; Dorward, David W; Voyich, Jovanka M; Liu, Mengyao; Burns, Eugene H; Culnan, Derek M; Bretscher, Anthony; Musser, James M

2002-05-28

Streptococcal inhibitor of complement (Sic) is a secreted protein made predominantly by serotype M1 Group A Streptococcus (GAS), which contributes to persistence in the mammalian upper respiratory tract and epidemics of human disease. Unexpectedly, an isogenic sic-negative mutant adhered to human epithelial cells significantly better than the wild-type parental strain. Purified Sic inhibited the adherence of a sic negative serotype M1 mutant and of non-Sic-producing GAS strains to human epithelial cells. Sic was rapidly internalized by human epithelial cells, inducing cell flattening and loss of microvilli. Ezrin and moesin, human proteins that functionally link the cytoskeleton to the plasma membrane, were identified as Sic-binding proteins by affinity chromatography and matrix-assisted laser desorption/ionization time-of-flight mass spectrometry analysis. Sic colocalized with ezrin inside epithelial cells and bound to the F-actin-binding site region located in the carboxyl terminus of ezrin and moesin. Synthetic peptides corresponding to two regions of Sic had GAS adherence-inhibitory activity equivalent to mature Sic and inhibited binding of Sic to ezrin. In addition, the sic mutant was phagocytosed and killed by human polymorphonuclear leukocytes significantly better than the wild-type strain, and Sic colocalized with ezrin in discrete regions of polymorphonuclear leukocytes. The data suggest that binding of Sic to ezrin alters cellular processes critical for efficient GAS contact, internalization, and killing. Sic enhances bacterial survival by enabling the pathogen to avoid the intracellular environment. This process contributes to the abundance of M1 GAS in human infections and their ability to cause epidemics.

Carbon monoxide sensor and method of use thereof

DOEpatents

McDaniel; Anthony H. , Medlin; J. Will , Bastasz; Robert J.

2007-09-04

Carbon monoxide sensors suitable for use in hydrogen feed streams and methods of use thereof are disclosed. The sensors are palladium metal/insulator/semiconductor (Pd-MIS) sensors which may possess a gate metal layer having uniform, Type 1, or non-uniform, Type 2, film morphology. Type 1 sensors display an increased sensor response in the presence of carbon monoxide while Type 2 sensors display a decreased response to carbon monoxide. The methods and sensors disclosed herein are particularly suitable for use in proton exchange membrane fuel cells (PEMFCs).

A comparative study on electrical characteristics of 1-kV pnp and npn SiC bipolar junction transistors

NASA Astrophysics Data System (ADS)

Okuda, Takafumi; Kimoto, Tsunenobu; Suda, Jun

2018-04-01

We investigate the electrical characteristics of 1-kV pnp SiC bipolar junction transistors (BJTs) and compare them with those of npn SiC BJTs. The base resistance, current gain, and blocking capability are characterized. It is found that the base resistance of pnp SiC BJTs is two orders of magnitude lower than that of npn SiC BJTs. However, the obtained current gains are low below unity in pnp SiC BJTs, whereas npn SiC BJTs exhibit a current gain of 14 without surface passivation. The reason for the poor current gain of pnp SiC BJTs is discussed.

Ultra-low power hydrogen sensing based on a palladium-coated nanomechanical beam resonator

NASA Astrophysics Data System (ADS)

Henriksson, Jonas; Villanueva, Luis Guillermo; Brugger, Juergen

2012-07-01

Hydrogen sensing is essential to ensure safety in near-future zero-emission fuel cell powered vehicles. Here, we present a novel hydrogen sensor based on the resonant frequency change of a nanoelectromechanical clamped-clamped beam. The beam is coated with a Pd layer, which expands in the presence of H2, therefore generating a stress build-up that causes the frequency of the device to drop. The devices are able to detect H2 concentrations below 0.5% within 1 s of the onset of the exposure using only a few hundreds of pW of power, matching the industry requirements for H2 safety sensors. In addition, we investigate the strongly detrimental effect that relative humidity (RH) has on the Pd responsivity to H2, showing that the response is almost nullified at about 70% RH. As a remedy for this intrinsic limitation, we applied a mild heating current through the beam, generating a few μW of power, whereby the responsivity of the sensors is fully restored and the chemo-mechanical process is accelerated, significantly decreasing response times. The sensors are fabricated using standard processes, facilitating their eventual mass-production.Hydrogen sensing is essential to ensure safety in near-future zero-emission fuel cell powered vehicles. Here, we present a novel hydrogen sensor based on the resonant frequency change of a nanoelectromechanical clamped-clamped beam. The beam is coated with a Pd layer, which expands in the presence of H2, therefore generating a stress build-up that causes the frequency of the device to drop. The devices are able to detect H2 concentrations below 0.5% within 1 s of the onset of the exposure using only a few hundreds of pW of power, matching the industry requirements for H2 safety sensors. In addition, we investigate the strongly detrimental effect that relative humidity (RH) has on the Pd responsivity to H2, showing that the response is almost nullified at about 70% RH. As a remedy for this intrinsic limitation, we applied a mild heating current through the beam, generating a few μW of power, whereby the responsivity of the sensors is fully restored and the chemo-mechanical process is accelerated, significantly decreasing response times. The sensors are fabricated using standard processes, facilitating their eventual mass-production. Electronic supplementary information (ESI) available. See DOI: 10.1039/c2nr30639e

Theory after experiment on sensing mechanism of a newly developed sensor molecule: Converging or diverging?

NASA Astrophysics Data System (ADS)

Paul, Suvendu; Karar, Monaj; Das, Biswajit; Mallick, Arabinda; Majumdar, Tapas

2017-12-01

Fluoride ion sensing mechanism of 3,3‧-bis(indolyl)-4-chlorophenylmethane has been analyzed with density functional and time-dependent density functional theories. Extensive theoretical calculations on molecular geometry & energy, charge distribution, orbital energies & electronic distribution, minima on potential energy surface confirmed strong hydrogen bonded sensor-anion complex with incomplete proton transfer in S0. In S1, strong hydrogen bonding extended towards complete ESDPT. The distinct and single minima on the PES of the sensor-anion complex for both ground and first singlet excited states confirmed the concerted proton transfer mechanism. Present study well reproduced the experimental spectroscopic data and provided ESDPT as probable fluoride sensing mechanism.

Reusable Cryogenic Tank VHM Using Fiber Optic Distributed Sensing Technology

NASA Technical Reports Server (NTRS)

Bodan-Sanders, Patricia; Bouvier, Carl

1998-01-01

The reusable oxygen and hydrogen tanks are key systems for both the X-33 (sub-scale, sub-orbital technology demonstrator) and the commercial Reusable Launch Vehicle (RLV). The backbone of the X-33 Reusable Cryogenic Tank Vehicle Health Management (VHM) system lies in the optical network of distributed strain temperature and hydrogen sensors. This network of fiber sensors will create a global strain and temperature map for monitoring the health of the tank structure, cryogenic insulation, and Thermal Protection System. Lockheed Martin (Sanders and LMMSS) and NASA Langley have developed this sensor technology for the X-33 and have addressed several technical issues such as fiber bonding and laser performance in this harsh environment.

Low Activation Joining of SiC/SiC Composites for Fusion Applications: Modeling Thermal and Irradiation-induced Swelling Effects on Integrity of Ti3SiC2/SiC Joint

DOE Office of Scientific and Technical Information (OSTI.GOV)

Nguyen, Ba Nghiep; Henager, Charles H.; Kurtz, Richard J.

This work developed a continuum damage mechanics model that incorporates thermal expansion combined with irradiation-induced swelling effects to study the origin of cracking observed in recent irradiation experiments. Micromechanical modeling using an Eshelby-Mori-Tanaka approach was used to compute the thermoelastic properties of the Ti3SiC2/SiC joint needed for the model. In addition, a microstructural dual-phase Ti3SiC2/SiC model was developed to determine irradiation-induced swelling of the composite joint at a given temperature resulting from differential swelling of SiC and the Ti3SiC2 MAX phase. Three cases for the miniature torsion hourglass (THG) specimens containing a Ti3SiC2/SiC joint were analyzed corresponding to three irradiationmore » temperatures: 800oC, 500oC, and 400oC.« less

KSC-05PD-1590

NASA Technical Reports Server (NTRS)

2005-01-01

KENNEDY SPACE CENTER, FLA. Media gather in the television studio at the NASA News Center to hear members of the Mission Management Team reveal aspects of the troubleshooting and testing being done on the liquid hydrogen tank low-level fuel cut-off sensor. On the stage at right are (from left) Bruce Buckingham, NASA news chief; Wayne Hale, Space Shuttle deputy program manager; John Muratore, manager of Systems Engineering and Integration for the Space Shuttle Program; and Mike Wetmore, director of Space Shuttle Processing. The sensor failed a routine prelaunch check during the launch countdown July 13, causing mission managers to scrub Discovery's first launch attempt. The sensor protects the Shuttle's main engines by triggering their shutdown in the event fuel runs unexpectedly low. The sensor is one of four inside the liquid hydrogen section of the External Tank (ET).

Hybrid SnO2/TiO2 Nanocomposites for Selective Detection of Ultra-Low Hydrogen Sulfide Concentrations in Complex Backgrounds

PubMed Central

Larin, Alexander; Womble, Phillip C.; Dobrokhotov, Vladimir

2016-01-01

In this paper, we present a chemiresistive metal oxide (MOX) sensor for detection of hydrogen sulfide. Compared to the previous reports, the overall sensor performance was improved in multiple characteristics, including: sensitivity, selectivity, stability, activation time, response time, recovery time, and activation temperature. The superior sensor performance was attributed to the utilization of hybrid SnO2/TiO2 oxides as interactive catalytic layers deposited using a magnetron radio frequency (RF) sputtering technique. The unique advantage of the RF sputtering for sensor fabrication is the ability to create ultra-thin films with precise control of geometry, morphology and chemical composition of the product of synthesis. Chemiresistive films down to several nanometers can be fabricated as sensing elements. The RF sputtering technique was found to be very robust for bilayer and multilayer oxide structure fabrication. The geometry, morphology, chemical composition and electronic structure of interactive layers were evaluated in relation to their gas sensing performance, using scanning electron microscopy (SEM), X-ray diffraction technique (XRD), atomic force microscopy (AFM), Energy Dispersive X-ray Spectroscopy (EDAX), UV visible spectroscopy, and Kelvin probe measurements. A sensor based on multilayer SnO2/TiO2 catalytic layer with 10% vol. content of TiO2 demonstrated the best gas sensing performance in all characteristics. Based on the pattern relating material’s characteristics to gas sensing performance, the optimization strategy for hydrogen sulfide sensor fabrication was suggested. PMID:27618900

Are Nonadiabatic Reaction Dynamics the Key to Novel Organosilicon Molecules? The Silicon (Si(3P))-Dimethylacetylene (C4H6(X1A1g)) System as a Case Study.

PubMed

Thomas, Aaron M; Dangi, Beni B; Yang, Tao; Kaiser, Ralf I; Lin, Lin; Chou, Tzu-Jung; Chang, Agnes H H

2018-06-06

The bimolecular gas phase reaction of ground-state silicon (Si; 3 P) with dimethylacetylene (C 4 H 6 ; X 1 A 1g ) was investigated under single collision conditions in a crossed molecular beams machine. Merged with electronic structure calculations, the data propose nonadiabatic reaction dynamics leading to the formation of singlet SiC 4 H 4 isomer(s) and molecular hydrogen (H 2 ) via indirect scattering dynamics along with intersystem crossing (ISC) from the triplet to the singlet surface. The reaction may lead to distinct energetically accessible singlet SiC 4 H 4 isomers ( 1 p8- 1 p24) in overall exoergic reaction(s) (-107 -20 +12 kJ mol -1 ). All feasible reaction products are either cyclic, carry carbene analogous silylene moieties, or carry C-Si-H or C-Si-C bonds that would require extensive isomerization from the initial collision complex(es) to the fragmenting singlet intermediate(s). The present study demonstrates the first successful crossed beams study of an exoergic reaction channel arising from bimolecular collisions of silicon, Si( 3 P), with a hydrocarbon molecule.

Deposition of BN interphase coatings from B-trichloroborazine and its effects on the mechanical properties of SiC/SiC composites

NASA Astrophysics Data System (ADS)

Wu, Haitang; Chen, Mingwei; Wei, Xi; Ge, Min; Zhang, Weigang

2010-12-01

Boron nitride thin films were deposited on silicon carbide fibers by chemical vapor deposition at atmospheric pressure from the single source precursor B-trichloroborazine (Cl 3B 3N 3H 3, TCB). The film growth and structure, as a function of deposition temperature, hydrogen gas flow rate, and deposition time, were discussed. The deposition rate reaches a maximum at 1000 °C, then decreases with the increasing of temperature, and the apparent activation energy of the reaction is 127 kJ/mol. Above 1000 °C, gas-phase nucleation determines the deposition process. The deposited BN films were characterized by Raman spectroscopy, X-ray diffraction (XRD) and scanning electron microscopy (SEM). The effect of BN interphase on the mechanical properties of the unidirectional SiC fiber-reinforced SiC matrix (SiC/SiC) composites was also investigated. The results show that the flexural strength of SiC/SiC composites with and without coating is 276 MPa and 70 MPa, respectively, which indicates that BN interphase coating deposited from B-trichloroborazine precursor can effectively adjust the fiber/matrix interface, thus causing a dramatic increase in the mechanical properties of the composites.

Ultra-low power hydrogen sensing based on a palladium-coated nanomechanical beam resonator.

PubMed

Henriksson, Jonas; Villanueva, Luis Guillermo; Brugger, Juergen

2012-08-21

Hydrogen sensing is essential to ensure safety in near-future zero-emission fuel cell powered vehicles. Here, we present a novel hydrogen sensor based on the resonant frequency change of a nanoelectromechanical clamped-clamped beam. The beam is coated with a Pd layer, which expands in the presence of H(2), therefore generating a stress build-up that causes the frequency of the device to drop. The devices are able to detect H(2) concentrations below 0.5% within 1 s of the onset of the exposure using only a few hundreds of pW of power, matching the industry requirements for H(2) safety sensors. In addition, we investigate the strongly detrimental effect that relative humidity (RH) has on the Pd responsivity to H(2), showing that the response is almost nullified at about 70% RH. As a remedy for this intrinsic limitation, we applied a mild heating current through the beam, generating a few μW of power, whereby the responsivity of the sensors is fully restored and the chemo-mechanical process is accelerated, significantly decreasing response times. The sensors are fabricated using standard processes, facilitating their eventual mass-production.

Low-cost fabrication of highly sensitive room temperature hydrogen sensor based on ordered mesoporous Co-doped TiO2 structure

NASA Astrophysics Data System (ADS)

Li, Zhong; Haidry, Azhar Ali; Wang, Tao; Yao, Zheng Jun

2017-07-01

The development of cost-effective gas sensors with improved sensing properties and minimum power consumption for room temperature hydrogen leakage monitoring is in increasing demand. In this context, this report focus on the facile fabrication of ordered mesoporous TiO2 via evaporation-induced self-assembly route. With the controlled doping threshold (3%Co-TiO2), the output resistance change to 1000 ppm H2 is ˜4.1 × 103 with the response time of 66 s. The sensor response exhibits power law dependence with an increase in the hydrogen concentration, where the power law coefficient was found not only specific to the kind of target gas but also related to temperature. Further, the effect of structure integrity with doping level and humidity on sensing characteristics is interpreted in terms of variation in surface potential eVS and depletion region w caused by the adsorption of molecular oxygen O2-.

SiC-based Photo-detectors for UV, VUV, EUV and Soft X-ray Detection

NASA Technical Reports Server (NTRS)

Yan, Feng

2006-01-01

A viewgraph presentation describing an ideal Silicon Carbide detector for ultraviolet, vacuum ultraviolet, extreme ultraviolet and soft x-ray detection is shown. The topics include: 1) An ideal photo-detector; 2) Dark current density of SiC photodiodes at room temperature; 3) Dark current in SiC detectors; 4) Resistive and capacitive feedback trans-impedance amplifier; 5) Avalanche gain; 6) Excess noise; 7) SNR in single photon counting mode; 8) Structure of SiC single photon counting APD and testing structure; 9) Single photon counting waveform and testing circuit; 10) Amplitude of SiC single photon counter; 11) Dark count of SiC APD photon counters; 12) Temperature-dependence of dark count rate; 13) Reduce the dark count rate by reducing the breakdown electric field; 14) Spectrum range for SiC detectors; 15) QE curves of Pt/4H-SiC photodiodes; 16) QE curve of SiC; 17) QE curves of SiC photodiode vs. penetration depth; 18) Visible rejection of SiC photodiodes; 19) Advantages of SiC photodiodes; 20) Competitors of SiC detectors; 21) Extraterrestrial solar spectra; 22) Visible-blind EUV detection; 23) Terrestrial solar spectra; and 24) Less than 1KeV soft x-ray detection.

Effects of SiC on Properties of Cu-SiC Metal Matrix Composites

NASA Astrophysics Data System (ADS)

Efe, G. Celebi; Altinsoy, I.; Ipek, M.; Zeytin, S.; Bindal, C.

2011-12-01

This paper was focused on the effects of particle size and distribution on some properties of the SiC particle reinforced Cu composites. Copper powder produced by cementation method was reinforced with SiC particles having 1 and 30 μm particle size and sintered at 700 °C. SEM studies showed that SiC particles dispersed in copper matrix homogenously. The presence of Cu and SiC components in composites were verified by XRD analysis technique. The relative densities of Cu-SiC composites determined by Archimedes' principle are ranged from 96.2% to 90.9% for SiC with 1 μm particle size, 97.0 to 95.0 for SiC with 30 μm particle size. Measured hardness of sintered compacts varied from 130 to 155 HVN for SiC having 1 μm particle size, 188 to 229 HVN for SiC having 1 μm particle size. Maximum electrical conductivity of test materials was obtained as 80.0% IACS (International annealed copper standard) for SiC with 1 μm particle size and 83.0% IACS for SiC with 30 μm particle size.

Controlled surface chemistry of diamond/β-SiC composite films for preferential protein adsorption.

PubMed

Wang, Tao; Handschuh-Wang, Stephan; Yang, Yang; Zhuang, Hao; Schlemper, Christoph; Wesner, Daniel; Schönherr, Holger; Zhang, Wenjun; Jiang, Xin

2014-02-04

Diamond and SiC both process extraordinary biocompatible, electronic, and chemical properties. A combination of diamond and SiC may lead to highly stable materials, e.g., for implants or biosensors with excellent sensing properties. Here we report on the controllable surface chemistry of diamond/β-SiC composite films and its effect on protein adsorption. For systematic and high-throughput investigations, novel diamond/β-SiC composite films with gradient composition have been synthesized using the hot filament chemical vapor deposition (HFCVD) technique. As revealed by scanning electron microscopy (SEM), the diamond/β-SiC ratio of the composite films shows a continuous change from pure diamond to β-SiC over a length of ∼ 10 mm on the surface. X-ray photoelectron spectroscopy (XPS) and time-of-flight secondary ion mass spectrometry (ToF-SIMS) was employed to unveil the surface termination of chemically oxidized and hydrogen treated surfaces. The surface chemistry of the composite films was found to depend on diamond/β-SiC ratio and the surface treatment. As observed by confocal fluorescence microscopy, albumin and fibrinogen were preferentially adsorbed from buffer: after surface oxidation, the proteins preferred to adsorb on diamond rather than on β-SiC, resulting in an increasing amount of proteins adsorbed to the gradient surfaces with increasing diamond/β-SiC ratio. By contrast, for hydrogen-treated surfaces, the proteins preferentially adsorbed on β-SiC, leading to a decreasing amount of albumin adsorbed on the gradient surfaces with increasing diamond/β-SiC ratio. The mechanism of preferential protein adsorption is discussed by considering the hydrogen bonding of the water self-association network to OH-terminated surfaces and the change of the polar surface energy component, which was determined according to the van Oss method. These results suggest that the diamond/β-SiC gradient film can be a promising material for biomedical applications which require good biocompatibility and selective adsorption of proteins and cells to direct cell migration.

Aryl C—H···Cl– Hydrogen Bonding in a Fluorescent Anion Sensor

PubMed Central

Tresca, Blakely W.; Zakharov, Lev N.; Carroll, Calden N.; Johnson, Darren W.; Haley, Michael M.

2014-01-01

A new phenyl-acetylene receptor containing a carbonaceous hydrogen bond donor activates anion binding in conjunction with two stabilizing ureas. The unusual CH···Cl– hydrogen bond is apparent in solution by large 1H NMR chemical shifts and by a short, linear contact in the solid state. PMID:23843050

Properties of Resistive Hydrogen Sensors as a Function of Additives of 3 D-Metals Introduced in the Volume of Thin Nanocrystalline SnO2 Films

NASA Astrophysics Data System (ADS)

Sevast'yanov, E. Yu.; Maksimova, N. K.; Potekaev, A. I.; Sergeichenko, N. V.; Chernikov, E. V.; Almaev, A. V.; Kushnarev, B. O.

2017-11-01

Analysis of the results of studying electrical and gas sensitive characteristics of the molecular hydrogen sensors based on thin nanocrystalline SnO2 films coated with dispersed Au layers and containing Au+Ni and Au+Co impurities in the bulk showed that the characteristics of these sensors are more stable under the prolonged exposure to hydrogen in comparison with Au/SnO2:Sb, Au films modified only with gold. It has been found that introduction of the nickel and cobalt additives increases the band bending at the grain boundaries of tin dioxide already in freshly prepared samples, which indicates an increase in the density Ni of the chemisorbed oxygen. It is important that during testing, the band bending eφs at the grain boundaries of tin dioxide additionally slightly increases. It can be assumed that during crystallization of films under thermal annealing, the 3d-metal atoms in the SnO2 volume partially segregate on the surface of microcrystals and form bonds with lattice oxygen, the superstoichiometric tin atoms are formed, and the density Ni increases. If the bonds of oxygen with nickel and cobalt are stronger than those with tin, then, under the prolonged tests, atomic hydrogen will be oxidized not by lattice oxygen, but mainly by the chemisorbed one. In this case, stability of the sensors' characteristics increases.

Nanocrystalline SiC and Ti 3SiC 2 Alloys for Reactor Materials: Diffusion of Fission Product Surrogates

DOE Office of Scientific and Technical Information (OSTI.GOV)

Henager, Charles H.; Jiang, Weilin

2014-11-01

MAX phases, such as titanium silicon carbide (Ti 3SiC 2), have a unique combination of both metallic and ceramic properties, which make them attractive for potential nuclear applications. Ti 3SiC 2 has been suggested in the literature as a possible fuel cladding material. Prior to the application, it is necessary to investigate diffusivities of fission products in the ternary compound at elevated temperatures. This study attempts to obtain relevant data and make an initial assessment for Ti 3SiC 2. Ion implantation was used to introduce fission product surrogates (Ag and Cs) and a noble metal (Au) in Ti 3SiC 2,more » SiC, and a dual-phase nanocomposite of Ti 3SiC 2/SiC synthesized at PNNL. Thermal annealing and in-situ Rutherford backscattering spectrometry (RBS) were employed to study the diffusivity of the various implanted species in the materials. In-situ RBS study of Ti 3SiC 2 implanted with Au ions at various temperatures was also performed. The experimental results indicate that the implanted Ag in SiC is immobile up to the highest temperature (1273 K) applied in this study; in contrast, significant out-diffusion of both Ag and Au in MAX phase Ti 3SiC 2 occurs during ion implantation at 873 K. Cs in Ti 3SiC 2 is found to diffuse during post-irradiation annealing at 973 K, and noticeable Cs release from the sample is observed. This study may suggest caution in using Ti 3SiC 2 as a fuel cladding material for advanced nuclear reactors operating at very high temperatures. Further studies of the related materials are recommended.« less

Nanocrystalline mesoporous SMO thin films prepared by sol gel process for MEMS-based hydrogen sensor

NASA Astrophysics Data System (ADS)

Gong, Jianwei; Fei, Weifeng; Seal, Sudipta; Chen, Quanfang

2004-01-01

MEMS based SnO2 gas sensor with sol gel synthesized mesoporous nanocrystalline (<10 nm) semiconductor thin (100~150 nm) film has been recently developed. The SnO2 nano film is fabricated with the combination of polymeric sol gel chemistry with block copolymers used for structure directing agents. The novel hydrogen sensor has a fast response time (1s) and quick recovery time (3s), as well as good sensitivity (about 90%), comparing to other hydrogen sensors developed. The improved capabilities are credited to the large surface to volume ratio of gas sensing thin film with nano sized porous surface topology, which can greatly increase the sensitivity even at relatively low working temperature. The gas sensing film is deposited onto a thin dielectric membrane of low thermal conductivity, which provides good thermal isolation between substrate and the gas-sensitive heated area on the membrane. In this way the power consumption can be kept very low. Since the fabrication process is completely compatible with IC industry, it makes mass production possible and greatly reduces the cost. The working temperature of the new sensor can be reduced as low as 100°C. The low working temperature posse advantages such as lower power consumption, lower thermal induced signal shift as well as safe detection in certain environments where temperature is strictly limited.

Computational investigation of single-wall carbon nanotube functionalized with palladium nanoclusters as hydrogen sulfide gas sensor

NASA Astrophysics Data System (ADS)

Bagherzadeh-Nobari, S.; Hosseini-Istadeh, K.; Kalantarinejad, R.; Elahi, S. M.; Shokri, A. A.

2018-03-01

Our aim is to study theoretically, the sensitivity of a hydrogen sulfide gas sensor, with regard to electrical conductance behavior. Our senor consists of a semiconductor single-wall carbon nanotube (SWCNT), functionalized with palladium nanoclusters, sandwiched between two gold electrodes. Initially, we have computed the optimized structure of the sensor, via molecular dynamic simulations. Then by using non-equilibrium Green's function method, combined with density functional theory, the electronic and transport properties of the sensor were calculated, and compared before and after adsorption of H2S gas, at different bias voltages. The highest sensitivity is achieved at 40 mV bias voltage. In this bias voltage, H2S gas adsorption causes a significant decrease of current, because as a result of charge transfer from the CNT and palladium nanoclusters, to H2S gas, majority carriers (electrons) decrease. The results show that CNT decorated with palladium nanoclusters can be a promising candidate in gas-sensorics.

Processing and Properties of SiC/MoSi2-SiC Composites Fabricated by Melt Infiltration

NASA Technical Reports Server (NTRS)

Bhatt, Ramakrishna T.; Hebsur, Mohan G.

2000-01-01

Hi-Nicalon SiC fiber reinforced MoSi2-SiC matrix composites (SiC/MoSi2-SiC) have been fabricated by the melt infiltration approach. The composite consists of approximately 60 vol%, 2-D woven BN/SiC coated Hi-Nicalon SiC fibers and approximately 40 vol% MoSi2-SiC matrix. The room temperature tensile properties and thermal conductivity of the SiC/MoSi2-SiC composites were measured and compared with those of the melt infiltrated SiC/SiC composites. The influence oi fiber architecture on tensile properties was also evaluated. Results indicate that the primary modulus, stress corresponding to deviation from linearity, and transverse thermal conductivity values for the SiC/MoSi2-SiC composites are significantly lower than those for the SiC/SiC composites. Microcracking of the matrix due to the large difference in thermal expansion between MoSi2 and SiC appears to be the reason for the lower matrix dominated properties of SiC/MoSi2-SiC composites.

Liquid Hydrogen Sensor Considerations for Space Exploration

NASA Technical Reports Server (NTRS)

Moran, Matthew E.

2006-01-01

The on-orbit management of liquid hydrogen planned for the return to the moon will introduce new considerations not encountered in previous missions. This paper identifies critical liquid hydrogen sensing needs from the perspective of reliable on-orbit cryogenic fluid management, and contrasts the fundamental differences in fluid and thermodynamic behavior for ground-based versus on-orbit conditions. Opportunities for advanced sensor development and implementation are explored in the context of critical Exploration Architecture operations such as on-orbit storage, docking, and trans-lunar injection burn. Key sensing needs relative to these operations are also examined, including: liquid/vapor detection, thermodynamic condition monitoring, mass gauging, and leak detection. Finally, operational aspects of an integrated system health management approach are discussed to highlight the potential impact on mission success.

Computational Modeling of Radiation Phenomenon in SiC for Nuclear Applications

NASA Astrophysics Data System (ADS)

Ko, Hyunseok

Silicon carbide (SiC) material has been investigated for promising nuclear materials owing to its superior thermo-mechanical properties, and low neutron cross-section. While the interest in SiC has been increasing, the lack of fundamental understanding in many radiation phenomena is an important issue. More specifically, these phenomena in SiC include the fission gas transport, radiation induced defects and its evolution, radiation effects on the mechanical stability, matrix brittleness of SiC composites, and low thermal conductivities of SiC composites. To better design SiC and SiC composite materials for various nuclear applications, understanding each phenomenon and its significance under specific reactor conditions is important. In this thesis, we used various modeling approaches to understand the fundamental radiation phenomena in SiC for nuclear applications in three aspects: (a) fission product diffusion through SiC, (b) optimization of thermodynamic stable self-interstitial atom clusters, (c) interface effect in SiC composite and their change upon radiation. In (a) fission product transport work, we proposed that Ag/Cs diffusion in high energy grain boundaries may be the upper boundary in unirradiated SiC at relevant temperature, and radiation enhanced diffusion is responsible for fast diffusion measured in post-irradiated fuel particles. For (b) the self-interstitial cluster work, thermodynamically stable clusters are identified as a function of cluster size, shape, and compositions using a genetic algorithm. We found that there are compositional and configurational transitions for stable clusters as the cluster size increases. For (c) the interface effect in SiC composite, we investigated recently proposed interface, which is CNT reinforced SiC composite. The analytical model suggests that CNT/SiC composites have attractive mechanical and thermal properties, and these fortify the argument that SiC composites are good candidate materials for the cladding. We used grand canonical monte carlo to optimize the interface, as a part of the stepping stone for further study using the interface.

Streptococcal inhibitor of complement (SIC) inhibits the membrane attack complex by preventing uptake of C567 onto cell membranes

PubMed Central

Fernie-King, Barbara A; Seilly, David J; Willers, Christine; Würzner, Reinhard; Davies, Alexandra; Lachmann, Peter J

2001-01-01

Streptococcal inhibitor of complement (SIC) was first described in 1996 as a putative inhibitor of the membrane attack complex of complement (MAC). SIC is a 31 000 MW protein secreted in large quantities by the virulent Streptococcus pyogenes strains M1 and M57, and is encoded by a gene which is extremely variable. In order to study further the interactions of SIC with the MAC, we have made a recombinant form of SIC (rSIC) in Escherichia coli and purified native M1 SIC which was used to raise a polyclonal antibody. SIC prevented reactive lysis of guinea pig erythrocytes by the MAC at a stage prior to C5b67 complexes binding to cell membranes, presumably by blocking the transiently expressed membrane insertion site on C7. The ability of SIC and clusterin (another putative fluid phase complement inhibitor) to inhibit complement lysis was compared, and found to be equally efficient. In parallel, by enzyme-linked immunosorbent assay both SIC and rSIC bound strongly to C5b67 and C5b678 complexes and to a lesser extent C5b-9, but only weakly to individual complement components. The implications of these data for virulence of SIC-positive streptococci are discussed, in light of the fact that Gram-positive organisms are already protected against complement lysis by the presence of their peptidoglycan cell walls. We speculate that MAC inhibition may not be the sole function of SIC. PMID:11454069

Effects of compound carboxylate-urea system on nano Ni-Cr/SiC composite coatings from trivalent chromium baths.

PubMed

He, Xinkuai; Hou, Bailong; Cai, Youxing; Wu, Luye

2013-03-01

The effects of compound carboxylate-urea system on the nano Ni-Cr/SiC composite coatings from trivalent chromium baths have been investigated in ultrasonic field. These results indicated that the SiC and Cr contents and the thickness of the Ni-Cr/SiC composite coatings could be obviously improved by the compound carboxylate-urea system. The steady-state polarization curves showed that the hydrogen evolution reaction (HER) could be significantly inhibited by the compound carboxylate-urea system, which was benefit to increase the SiC and Cr contents and the thickness of the composite coatings. The cyclic voltammetry (CV) curves showed that both of the Cr(III) and Ni(II) cathodic polarization could be increased in the bath containing the compound carboxylate-urea system. Thus, a compact Ni-Cr/SiC composite coating could be obtained using this technique. The surface morphology of the Ni-Cr/SiC composite coatings checked with the scanning electron micrographs (SEM) showed that the surface smoothness could be also improved and the microcracks and pinholes could be decreased due to the presence of the compound carboxylate-urea system. The phase composition of the as-posited coating was measured by the X-ray diffraction. XRD data showed that the as-posited coating was Ni-Cr/SiC composite coating. The chemical composition of the coating was investigated by energy dispersive spectrum (EDS) analysis. The result showed the Ni-Cr/SiC composite coatings with 3.8 wt.% SiC and 24.68 wt.% Cr were obtained in this study, which had best corrosion resistance according to the results of the typical potentiodynamic polarization curves of the Ni-Cr/SiC composite coatings.

Advances in Hydrogen, Carbon Dioxide, and Hydrocarbon Gas Sensor Technology Using GaN and ZnO-Based Devices

PubMed Central

Anderson, Travis; Ren, Fan; Pearton, Stephen; Kang, Byoung Sam; Wang, Hung-Ta; Chang, Chih-Yang; Lin, Jenshan

2009-01-01

In this paper, we review our recent results in developing gas sensors for hydrogen using various device structures, including ZnO nanowires and GaN High Electron Mobility Transistors (HEMTs). ZnO nanowires are particularly interesting because they have a large surface area to volume ratio, which will improve sensitivity, and because they operate at low current levels, will have low power requirements in a sensor module. GaN-based devices offer the advantage of the HEMT structure, high temperature operation, and simple integration with existing fabrication technology and sensing systems. Improvements in sensitivity, recoverability, and reliability are presented. Also reported are demonstrations of detection of other gases, including CO2 and C2H4 using functionalized GaN HEMTs. This is critical for the development of lab-on-a-chip type systems and can provide a significant advance towards a market-ready sensor application. PMID:22408548

Silicon carbide ceramic membranes

NASA Astrophysics Data System (ADS)

Suwanmethanond, Varaporn

This dissertation focuses on the preparation of silicon carbide (SiC) ceramic membranes on SiC substrates. An original technique of SiC porous substrate preparation using sintering methods was developed during the work for the completion of the dissertation. The resulting SiC substrates have demonstrated high porosity, high internal surface area, well interconnected surface pore network and, at the same time, good thermal, chemical and mechanical stability. In a further development, sol-gel techniques were used to deposit micro-porous SiC membranes on these SiC porous substrates. The SiC membranes were characterized by a variety of techniques: ideal gas selectivity (He and N2), XRD, BET, SEM, XPS, and AFM. The characterization results confirmed that the asymmetric sol-gel SiC membranes were of high quality, with no cracks or pinholes, and exhibiting high resistance to corrosion and high hydro-thermal stability. In conclusion, the SiC ceramic membrane work was successfully completed. Two publications in international peer reviewed journals resulted out of this work.

Fundamental Study of Tank with MgB2 Level Sensor for Transportation of Liquid Hydrogen

NASA Astrophysics Data System (ADS)

Maekawa, Kazuma; Takeda, Minoru; Matsuno, Yu; Fujikawa, Shizuichi; Kuroda, Tsuneo; Kumakura, Hiroaki

We are currently developing an external-heating-type superconducting magnesium diboride (MgB2) level sensor for a liquid hydrogen (LH2) tank. The aim of this study is to investigate the measuring current dependence of the level-detecting characteristics of the MgB2 level sensor for LH2 under a static condition which has not yet been clarified. It was found that the linear correlation coefficient was 0.99 or more, indicating high linearity, regardless of the measuring current at heater inputs of 3 W and 6 W. Moreover, there was no effect of self-heating by the measuring current and it was found that a current of up to 100 mA can be used.

Method of detecting defects in ion exchange membranes of electrochemical cells by chemochromic sensors

DOEpatents

Brooker, Robert Paul; Mohajeri, Nahid

2016-01-05

A method of detecting defects in membranes such as ion exchange membranes of electrochemical cells. The electrochemical cell includes an assembly having an anode side and a cathode side with the ion exchange membrane in between. In a configuration step a chemochromic sensor is placed above the cathode and flow isolation hardware lateral to the ion exchange membrane which prevents a flow of hydrogen (H.sub.2) between the cathode and anode side. The anode side is exposed to a first reactant fluid including hydrogen. The chemochromic sensor is examined after the exposing for a color change. A color change evidences the ion exchange membrane has at least one defect that permits H.sub.2 transmission therethrough.

NASA Hydrogen Research for Spaceport and Space Based Applications

NASA Technical Reports Server (NTRS)

Anderson, Tim

2006-01-01

The activities presented are a broad based approach to advancing key hydrogen related technologies in areas such as hydrogen production, distributed sensors for hydrogen-leak detection, laser instrumentation for hydrogen-leak detection, and cryogenic transport and storage. Presented are the results form 15 research projects, education, and outreach activities, system and trade studies, and project management. The work will aid in advancing the state-of-the-art for several critical technologies related to the implementation of a hydrogen infrastructure. Activities conducted are relevant to a number of propulsion and power systems for terrestrial, aeronautics, and aerospace applications.

Nanocomposite polymer structures for optical sensors of hydrogen sulfide

NASA Astrophysics Data System (ADS)

Sergeev, A. A.; Mironenko, A. Yu.; Nazirov, A. E.; Leonov, A. A.; Voznesenskii, S. S.

2017-08-01

Composite coatings based on gold and silver nanoparticles reduced in situ in the film of chitosan polysaccharide are studied. In the presence of hydrogen sulfide, the maximum of plasmon resonance of the nanoparticles that is proportional to the analyte concentration decreases. The detection limits for hydrogen sulfide are 0.1 and 5 ppm for the chitosan/silver and chitosan/gold nanocomposites, respectively.

System for rapid biohydrogen phenotypic screening of microorganisms using a chemochromic sensor

DOEpatents

Seibert, Michael; Benson, David K.; Flynn, Timothy Michael

2002-01-01

Provided is a system for identifying a hydrogen gas producing organism. The system includes a sensor film having a first layer comprising a transition metal oxide or oxysalt and a second layer comprising a hydrogen-dissociative catalyst metal, the first and second layers having an inner and an outer surface wherein the inner surface of the second layer is deposited on the outer surface of the first layer, and a substrate adjacent to the outer surface of the second layer, the organism isolated on the substrate.

Method and apparatus for rapid biohydrogen phenotypic screening of microorganisms using a chemochromic sensor

DOEpatents

Seibert, Michael; Benson, David K.; Flynn, Timothy Michael

2001-01-01

The invention provides an assay system for identifying a hydrogen-gas-producing organism, including a sensor film having a first layer comprising a transition metal oxide or oxysalt and a second layer comprising hydrogen-dissociative catalyst metal, the first and second layers having an inner and an outer surface wherein the inner surface of the second layer is deposited on the outer surface of the first layer, and a substrate disposed proximally to the outer surface of the second layer, the organism being isolated on the substrate.

Proton conduction in electrolyte made of manganese dioxide for hydrogen gas sensor

DOE Office of Scientific and Technical Information (OSTI.GOV)

Koyanaka, Hideki; Ueda, Yoshikatsu; Takeuchi, K

2012-01-01

We propose a network model of oxygen-pairs to store and conduct protons on the surface of manganese dioxide with a weak covalent bond like protons stored in pressured ice. The atomic distances of oxygen-pairs were estimated between 2.57 and 2.60 angstroms in crystal structures of ramsdellite-type and lambda-type manganese dioxides by using protonated samples and inelastic neutron scattering measurements. Good properties for a hydrogen gas sensor using electrolytes made of manganese dioxides that contain such oxygen-pairs were confirmed experimentally.

Safe and simple detection of sparse hydrogen by Pd-Au alloy/air based 1D photonic crystal sensor

NASA Astrophysics Data System (ADS)

Mitra, S.; Biswas, T.; Chattopadhyay, R.; Ghosh, J.; Bysakh, S.; Bhadra, S. K.

2016-11-01

A simple integrated hydrogen sensor using Pd-Au alloy/air based one dimensional photonic crystal with an air defect layer is theoretically modeled. Structural parameters of the photonic crystal are delicately scaled to generate photonic band gap frequencies in a visible spectral regime. An optimized defect thickness permits a localized defect mode operating at a frequency within the photonic band gap region. Hydrogen absorption causes modification in the band gap characteristics due to variation of refractive index and lattice parameters of the alloy. As a result, the transmission peak appeared due to the resonant defect state gets shifted. This peak shifting is utilized to detect sparse amount of hydrogen present in the surrounding environment. A theoretical framework is built to calculate the refractive index profile of hydrogen loaded alloy using density functional theory and Bruggeman's effective medium approximation. The calculated refractive index variation of Pd3Au alloy film due to hydrogen loading is verified experimentally by measuring the reflectance characteristics. Lattice expansion properties of the alloy are studied through X-ray diffraction analyses. The proposed structure shows about 3 nm red shift of the transmission peak for a rise of 1% atomic hydrogen concentration in the alloy.

Slush hydrogen quantity gaging and mixing for the National Aerospace Plane

NASA Astrophysics Data System (ADS)

Rudland, R. S.; Kroenke, I. M.; Urbach, A. R.

The National Aerospace Plane (NASP) design team has selected slush hydrogen as the fuel needed to power the high-speed ramjet-scramjet engines. Use of slush hydrogen rather than normal hydrogen provides significant improvements in density and cooling capacity for the aircraft. The loading of slush hydrogen in the NASP tank must be determined accurately to allow the vehicle size and weight to be kept to a minimum. A unique sensor developed at Ball to measure the slush density will be used in each region of the hydrogen tank to accurately determine the total mass of fuel loaded in the vehicle. The design, analysis, and test configuration for the mixing system is described in this paper. The mixing system is used to eliminate large-scale disturbances in the fluid produced by the large heat flux through the wall. The mixer also provides off-bottom suspension of the solids to create a more uniform slush mixture. The mixer design uses a pump to supply flow to an array of jets that produce mixing throughout the tank. Density sensors will be used in the test configuration to evaluate the mixing effectiveness.

Determination of Glucose Concentration in Yeast Culture Medium

NASA Astrophysics Data System (ADS)

Hara, Seiichi; Kishimoto, Tomokazu; Muraji, Masafumi; Tsujimoto, Hiroaki; Azuma, Masayuki; Ooshima, Hiroshi

The present paper describes a sensor for measuring the glucose concentration of yeast culture medium. The sensor determines glucose concentration by measuring the yield of hydrogen peroxide produced by glucose oxidase, which is monitored as luminescence using photomultiplier. The present sensor is able to measure low glucose concentration in media in which yeast cells keep respiration state. We herein describe the system and the characteristics of the glucose sensor.

Highly stretchable strain sensor based on polyurethane substrate using hydrogen bond-assisted laminated structure for monitoring of tiny human motions

NASA Astrophysics Data System (ADS)

Huang, Ying; Zhao, Yunong; Wang, Yang; Guo, Xiaohui; Zhang, Yangyang; Liu, Ping; Liu, Caixia; Zhang, Yugang

2018-03-01

Strain sensors used as flexible and wearable electronic devices have improved prospects in the fields of artificial skin, robotics, human-machine interfaces, and healthcare. This work introduces a highly stretchable fiber-based strain sensor with a laminated structure made up of a graphene nanoplatelet layer and a carbon black/single-walled carbon nanotube synergetic conductive network layer. An ultrathin, flexible, and elastic two-layer polyurethane (PU) yarn substrate was successively deposited by a novel chemical bonding-based layered dip-coating process. These strain sensors demonstrated high stretchability (˜350%), little hysteresis, and long-term durability (over 2400 cycles) due to the favorable tensile properties of the PU substrate. The linearity of the strain sensor could reach an adjusted R-squared of 0.990 at 100% strain, which is better than most of the recently reported strain sensors. Meanwhile, the strain sensor exhibited good sensibility, rapid response, and a lower detection limit. The lower detection limit benefited from the hydrogen bond-assisted laminated structure and continuous conductive path. Finally, a series of experiments were carried out based on the special features of the PU strain sensor to show its capacity of detecting and monitoring tiny human motions.

Tuning a Schottky barrier of epitaxial graphene/4H-SiC (0001) by hydrogen intercalation

DOE Office of Scientific and Technical Information (OSTI.GOV)

Dharmaraj, P.; Justin Jesuraj, P.; Jeganathan, K., E-mail: kjeganathan@yahoo.com

We report the electron transport properties of epitaxial graphene (EG) grown on 4H-SiC (0001) by low energy electron-beam irradiation. As-grown EG (AEG) on SiC interface exhibits rectifying current-voltage characteristics with a low Schottky barrier (SB) of 0.55 ± 0.05 eV and high reverse current leakage. The SB of AEG/SiC junction is extremely impeded by the Fermi level pinning (FLP) above the Dirac point due to charged states at the interface. Nevertheless, a gentle hydrogen intercalation at 900 °C enables the alleviation of both FLP and carrier scattering owing to the saturation of dangling bonds as evidenced by the enhancement of SB (0.75 ± 0.05 eV) and highmore » electron mobility well excess of 6000 cm{sup 2} V{sup −1} s{sup −1}.« less

Ultrafast and ultrasensitive hydrogen sensors based on self-assembly monolayer promoted 2-dimensional palladium nanoclusters

DOEpatents

Xu, Tao; Zach, Michael P.; Xiao, Zhili

2007-02-06

A device and method of making same. The device or hydrogen detector has a non-conducting substrate with a metal film capable of absorbing hydrogen to form a stable metal hydride. The metal film is being on the threshold of percolation and is connected to mechanism for sensing a change in electrical resistance in response to the presence of hydrogen in contact with the metal film which causes an increase in conductivity.

Ultrafast and ultrasensitive hydrogen sensors based on self-assembly monolayer promoted 2-dimensional palladium nanoclusters

DOEpatents

Xu, Tao [Darien, IL; Zach, Michael P [Darien, IL; Xiao, Zhili [Naperville, IL

2008-06-24

A device and method of making same. The device or hydrogen detector has a non-conducting substrate with a metal film capable of absorbing hydrogen to form a stable metal hydride. The metal film is on the threshold of percolation and is connected to mechanism for sensing a change in electrical resistance in response to the presence of hydrogen in contact with the metal film which causes an increase in conductivity.

Surface plasmon resonance-based fiber-optic hydrogen gas sensor utilizing palladium supported zinc oxide multilayers and their nanocomposite.

PubMed

Tabassum, Rana; Gupta, Banshi D

2015-02-10

We analyze surface plasmon resonance-based fiber-optic sensor for sensing of small concentrations of hydrogen gas in the visible region of the electromagnetic spectrum. One of the two probes considered has multilayers of zinc oxide (ZnO) and palladium (Pd) while the other has layer of their composite over a silver coated unclad core of the fiber. The analysis is carried out for different volume fractions of palladium nanoparticles dispersed in zinc oxide host material in the nanocomposite layer. For the analysis, a Maxwell-Garnett model is adopted for calculating the dielectric function of a ZnO:Pd nanocomposite having nanoparticles of dimensions smaller than the wavelength of radiation used. The effects of the volume fraction of the nanoparticles in the nanocomposite and the thickness of the nanocomposite layer on the figure of merit of the sensor have been studied. The film thickness of the layer and the volume fraction of nanoparticles in the ZnO:Pd nanocomposite layer have been optimized to achieve the maximum value of the figure of merit of the sensor. It has been found that the figure of merit of the sensing probe coated with ZnO:Pd nanocomposite is more than twofold of the sensing probe coated with multilayers of Pd and ZnO over a silver coated unclad core of the fiber; hence, the sensor with a nanocomposite layer works better than that with multilayers of zinc oxide and palladium. The sensor can be used for online monitoring and remote sensing of hydrogen gas.

Streptococcal inhibitor of complement promotes innate immune resistance phenotypes of invasive M1T1 group A Streptococcus.

PubMed

Pence, Morgan A; Rooijakkers, Suzan H M; Cogen, Anna L; Cole, Jason N; Hollands, Andrew; Gallo, Richard L; Nizet, Victor

2010-01-01

Streptococcal inhibitor of complement (SIC) is a highly polymorphic extracellular protein and putative virulence factor secreted by M1 and M57 strains of group A Streptococcus (GAS). The sic gene is highly upregulated in invasive M1T1 GAS isolates following selection of mutations in the covR/S regulatory locus in vivo. Previous work has shown that SIC (allelic form 1.01) binds to and inactivates complement C5b67 and human cathelicidin LL-37. We examined the contribution of SIC to innate immune resistance phenotypes of GAS in the intact organism, using (1) targeted deletion of sic in wild-type and animal-passaged (covS mutant) M1T1 GAS harboring the sic 1.84 allele and (2) heterologous expression of sic in M49 GAS, which does not possess the sic genein its genome. We find that M1T1 SIC production is strongly upregulated upon covS mutation but that the sic gene is not required for generation and selection of covS mutants in vivo. SIC 1.84 bound both human and murine cathelicidins and was necessary and sufficient to promote covS mutant M1T1 GAS resistance to LL-37, growth in human whole blood and virulence in a murine model of systemic infection. Finally, the sic knockout mutant M1T1 GAS strain was deficient in growth in human serum and intracellular macrophage survival. We conclude that SIC contributes to M1T1 GAS immune resistance and virulence phenotypes. Copyright © 2010 S. Karger AG, Basel.

Amino Acids in the Capsid Protein of Tomato Yellow Leaf Curl Virus That Are Crucial for Systemic Infection, Particle Formation, and Insect Transmission

PubMed Central

Noris, E.; Vaira, A. M.; Caciagli, P.; Masenga, V.; Gronenborn, B.; Accotto, G. P.

1998-01-01

A functional capsid protein (CP) is essential for host plant infection and insect transmission in monopartite geminiviruses. We studied two defective genomic DNAs of tomato yellow leaf curl virus (TYLCV), Sic and SicRcv. Sic, cloned from a field-infected tomato, was not infectious, whereas SicRcv, which spontaneously originated from Sic, was infectious but not whitefly transmissible. A single amino acid change in the CP was found to be responsible for restoring infectivity. When the amino acid sequences of the CPs of Sic and SicRcv were compared with that of a closely related wild-type virus (TYLCV-Sar), differences were found in the following positions: 129 (P in Sic and SicRcv, Q in Sar), 134 (Q in Sic and Sar, H in SicRcv) and 152 (E in Sic and SicRcv, D in Sar). We constructed TYLCV-Sar variants containing the eight possible amino acid combinations in those three positions and tested them for infectivity and transmissibility. QQD, QQE, QHD, and QHE had a wild-type phenotype, whereas PHD and PHE were infectious but nontransmissible. PQD and PQE mutants were not infectious; however, they replicated and accumulated CP, but not virions, in Nicotiana benthamiana leaf discs. The Q129P replacement is a nonconservative change, which may drastically alter the secondary structure of the CP and affect its ability to form the capsid. The additional Q134H change, however, appeared to compensate for the structural modification. Sequence comparisons among whitefly-transmitted geminiviruses in terms of the CP region studied showed that combinations other than QQD are present in several cases, but never with a P129. PMID:9811744

Extended range chemical sensing apparatus

DOEpatents

Hughes, Robert C.; Schubert, W. Kent

1994-01-01

An apparatus for sensing chemicals over extended range of concentrations. In particular, first and second sensors each having separate, but overlapping ranges for sensing concentrations of hydrogen are provided. Preferably, the first sensor is a MOS solid state device wherein the metal electrode or gate is a nickel alloy. The second sensor is a chemiresistor comprising a nickel alloy.

Development of SiC Large Tapered Crystal Growth

NASA Technical Reports Server (NTRS)

Neudeck, Phil

2010-01-01

Majority of very large potential benefits of wide band gap semiconductor power electronics have NOT been realized due in large part to high cost and high defect density of commercial wafers. Despite 20 years of development, present SiC wafer growth approach is yet to deliver majority of SiC's inherent performance and cost benefits to power systems. Commercial SiC power devices are significantly de-rated in order to function reliably due to the adverse effects of SiC crystal dislocation defects (thousands per sq cm) in the SiC wafer.

Large Scale Production of Densified Hydrogen Using Integrated Refrigeration and Storage

NASA Technical Reports Server (NTRS)

Notardonato, William U.; Swanger, Adam Michael; Jumper, Kevin M.; Fesmire, James E.; Tomsik, Thomas M.; Johnson, Wesley L.

2017-01-01

Recent demonstration of advanced liquid hydrogen storage techniques using Integrated Refrigeration and Storage (IRAS) technology at NASA Kennedy Space Center led to the production of large quantities of solid densified liquid and slush hydrogen in a 125,000 L tank. Production of densified hydrogen was performed at three different liquid levels and LH2 temperatures were measured by twenty silicon diode temperature sensors. System energy balances and solid mass fractions are calculated. Experimental data reveal hydrogen temperatures dropped well below the triple point during testing (up to 1 K), and were continuing to trend downward prior to system shutdown. Sub-triple point temperatures were seen to evolve in a time dependent manner along the length of the horizontal, cylindrical vessel. Twenty silicon diode temperature sensors were recorded over approximately one month for testing at two different fill levels (33 67). The phenomenon, observed at both two fill levels, is described and presented detailed and explained herein., and The implications of using IRAS for energy storage, propellant densification, and future cryofuel systems are discussed.

Nano strain-amplifier: Making ultra-sensitive piezoresistance in nanowires possible without the need of quantum and surface charge effects

NASA Astrophysics Data System (ADS)

Phan, Hoang-Phuong; Dinh, Toan; Kozeki, Takahiro; Nguyen, Tuan-Khoa; Qamar, Afzaal; Namazu, Takahiro; Nguyen, Nam-Trung; Dao, Dzung Viet

2016-09-01

This paper presents an innovative nano strain-amplifier employed to significantly enhance the sensitivity of piezoresistive strain sensors. Inspired from the dogbone structure, the nano strain-amplifier consists of a nano thin frame released from the substrate, where nanowires were formed at the centre of the frame. Analytical and numerical results indicated that a nano strain-amplifier significantly increases the strain induced into a free standing nanowire, resulting in a large change in their electrical conductance. The proposed structure was demonstrated in p-type cubic silicon carbide nanowires fabricated using a top down process. The experimental data showed that the nano strain-amplifier can enhance the sensitivity of SiC strain sensors at least 5.4 times larger than that of the conventional structures. This result indicates the potential of the proposed strain-amplifier for ultra-sensitive mechanical sensing applications.

Photonic crystal fiber modal interferometer with Pd/WO3 coating for real-time monitoring of dissolved hydrogen concentration in transformer oil

NASA Astrophysics Data System (ADS)

Zhang, Ya-nan; Wu, Qilu; Peng, Huijie; Zhao, Yong

2016-12-01

A highly-sensitive and temperature-robust photonic crystal fiber (PCF) modal interferometer coated with Pd/WO3 film was fabricated and studied, aiming for real-time monitoring of dissolved hydrogen concentration in transformer oil. The sensor probe was fabricated by splicing two segments of a single mode fiber (SMF) with both ends of the PCF. Since the collapse of air holes in the PCF in the interfaces between SMF and PCF, a SMF-PCF-SMF interferometer structure was formed. The Pd/WO3 film was fabricated by sol-gel method and coated on the surface of the PCF by dip-coating method. When the Pd/WO3 film is exposed to hydrogen, both the length and cladding refractive index of the PCF would be changed, resulting in the resonant wavelength shift of the interferometer. Experimental results showed that the hydrogen measurement sensitivity of the proposed sensor can reach 0.109 pm/(μl/l) in the transformer oil, with the measurement range of 0-10 000 μl/l and response time less than 33 min. Besides, the proposed sensor was temperature-insensitive without any compensation process, easy to fabricate without any tapering, polishing, or etching process, low cost and quickly response without any oil-gas separation device. All these performances satisfy the actual need of real-time monitoring of dissolved hydrogen concentration in the transformer oil.

Photonic crystal fiber modal interferometer with Pd/WO3 coating for real-time monitoring of dissolved hydrogen concentration in transformer oil.

PubMed

Zhang, Ya-Nan; Wu, Qilu; Peng, Huijie; Zhao, Yong

2016-12-01

A highly-sensitive and temperature-robust photonic crystal fiber (PCF) modal interferometer coated with Pd/WO 3 film was fabricated and studied, aiming for real-time monitoring of dissolved hydrogen concentration in transformer oil. The sensor probe was fabricated by splicing two segments of a single mode fiber (SMF) with both ends of the PCF. Since the collapse of air holes in the PCF in the interfaces between SMF and PCF, a SMF-PCF-SMF interferometer structure was formed. The Pd/WO 3 film was fabricated by sol-gel method and coated on the surface of the PCF by dip-coating method. When the Pd/WO 3 film is exposed to hydrogen, both the length and cladding refractive index of the PCF would be changed, resulting in the resonant wavelength shift of the interferometer. Experimental results showed that the hydrogen measurement sensitivity of the proposed sensor can reach 0.109 pm/(μl/l) in the transformer oil, with the measurement range of 0-10 000 μl/l and response time less than 33 min. Besides, the proposed sensor was temperature-insensitive without any compensation process, easy to fabricate without any tapering, polishing, or etching process, low cost and quickly response without any oil-gas separation device. All these performances satisfy the actual need of real-time monitoring of dissolved hydrogen concentration in the transformer oil.

Statistical Prediction of Sea Ice Concentration over Arctic

NASA Astrophysics Data System (ADS)

Kim, Jongho; Jeong, Jee-Hoon; Kim, Baek-Min

2017-04-01

In this study, a statistical method that predict sea ice concentration (SIC) over the Arctic is developed. We first calculate the Season-reliant Empirical Orthogonal Functions (S-EOFs) of monthly Arctic SIC from Nimbus-7 SMMR and DMSP SSM/I-SSMIS Passive Microwave Data, which contain the seasonal cycles (12 months long) of dominant SIC anomaly patterns. Then, the current SIC state index is determined by projecting observed SIC anomalies for latest 12 months to the S-EOFs. Assuming the current SIC anomalies follow the spatio-temporal evolution in the S-EOFs, we project the future (upto 12 months) SIC anomalies by multiplying the SI and the corresponding S-EOF and then taking summation. The predictive skill is assessed by hindcast experiments initialized at all the months for 1980-2010. When comparing predictive skill of SIC predicted by statistical model and NCEP CFS v2, the statistical model shows a higher skill in predicting sea ice concentration and extent.

Dip-coating of nano-sized CeO2 on SiC membrane and its effect on thermal diffusivity.

PubMed

Park, Jihye; Jung, Miewon

2014-05-01

CeO2-SiC mixed composite membrane was fabricated with porous SiC ceramic and cerium oxide powder synthesized by sol-gel process. This CeO2-SiC membrane and SiC membrane which is made by the purified SiC ceramic were pressed and sintered in Ar atmosphere. And then, the SiC membrane was dip-coated by cerium oxide precursor sol solution and heat-treated in air. The surface morphology, particle size, porosity and structure analysis of the mixing and dip-coating SiC membrane were monitored by FE-SEM and X-ray diffraction analysis. Surface area, pore volume and pore diameter were determined by BET instrument. Thermal diffusivity was measured by laser flash method with increasing temperature. The relation between porosity and thermal diffusivity from different preparation process has been discussed on this study.

Natural occurrence of silicon carbide in a diamondiferous kimberlite from Fuxian

USGS Publications Warehouse

Leung, I.; Guo, W.; Friedman, I.; Gleason, J.

1990-01-01

Considerable debate surrounds the existence of silicon carbide in nature, mostly owing to the problem of possible contamination by man-made SiC. Recently, Gurney1 reviewed reports of rare SiC inclusions in diamonds, and noted that SiC can only be regarded as a probable rather than proven cogenetic mineral. Here we report our observation of clusters of SiC coexisting with diamond in a kimberlite from Fuxian, China. Macrocrysts of ??-SiC are overgrown epitaxially by ??-SiC, and both polymorphs are structurally well ordered. We have also measured the carbon isotope compositions of SiC and diamonds from Fuxian. We find that SiC is more enriched in 12C than diamond by 20% relative to the PDB standard. Isotope fractionation might have occurred through an isotope exchange reaction in a common carbon reservoir. Silicon carbide may thus ultimately provide information on carbon cycling in the Earth's mantle.

Chemical reactivity of CVC and CVD SiC with UO2 at high temperatures

NASA Astrophysics Data System (ADS)

Silva, Chinthaka M.; Katoh, Yutai; Voit, Stewart L.; Snead, Lance L.

2015-05-01

Two types of silicon carbide (SiC) synthesized using two different vapor deposition processes were embedded in UO2 pellets and evaluated for their potential chemical reaction with UO2. While minor reactivity between chemical-vapor-composited (CVC) SiC and UO2 was observed at comparatively low temperatures of 1100 and 1300 °C, chemical-vapor-deposited (CVD) SiC did not show any such reactivity. However, both CVD and CVC SiCs showed some reaction with UO2 at a higher temperature (1500 °C). Elemental maps supported by phase maps obtained using electron backscatter diffraction indicated that CVC SiC was more reactive than CVD SiC at 1500 °C. Furthermore, this investigation indicated the formation of uranium carbides and uranium silicide chemical phases such as UC, USi2, and U3Si2 as a result of SiC reaction with UO2.

New Gas Polarographic Hydrogen Sensor

NASA Technical Reports Server (NTRS)

Dominguez, Jesus A.; Barile, Ron

2004-01-01

Polarography is the measurement of the current that flows in solution as a function of an applied voltage. The actual form of the observed polarographic current depends upon the manner in which the voltage is applied and on the characteristics of the working electrode. The new gas polarographic H2 sensor shows a current level increment with concentration of the gaseous H2 similar to those relating to metal ions in liquid electrolytes in well-known polarography. This phenomenon is caused by the fact that the diffusion of the gaseous H2 through a gas diffusion hole built in the sensor is a rate-determining step in the gaseous-hydrogen sensing mechanism. The diffusion hole artificially limits the diffusion of the gaseous H2 toward the electrode located at the sensor cavity. This gas polarographic H2 sensor. is actually an electrochemical-pumping cell since the gaseous H2 is in fact pumped via the electrochemical driving force generated between the electrodes. Gaseous H2 enters the diffusion hole and reaches the first electrode (anode) located in the sensor cavity to be transformed into an H+ ions or protons; H+ ions pass through the electrolyte and reach the second electrode (cathode) to be reformed to gaseous H2. Gas polarographic 02 sensors are commercially available; a gas polarographic 02 sensor was used to prove the feasibility of building a new gas polarographic H2 sensor.

SiC Integrated Circuits for Power Device Drivers Able to Operate in Harsh Environments

NASA Astrophysics Data System (ADS)

Godignon, P.; Alexandru, M.; Banu, V.; Montserrat, J.; Jorda, X.; Vellvehi, M.; Schmidt, B.; Michel, P.; Millan, J.

2014-08-01

The currently developed SiC electronic devices are more robust to high temperature operation and radiation exposure damage than correspondingly rated Si ones. In order to integrate the existent SiC high power and high temperature electronics into more complex systems, a SiC integrated circuit (IC) technology capable of operation at temperatures substantially above the conventional ones is required. Therefore, this paper is a step towards the development of ICs-control electronics that have to attend the harsh environment power applications. Concretely, we present the development of SiC MESFET-based digital circuitry, able to integrate gate driver for SiC power devices. Furthermore, a planar lateral power MESFET is developed with the aim of its co-integration on the same chip with the previously mentioned SiC digital ICs technology. And finally, experimental results on SiC Schottky-gated devices irradiated with protons and electrons are presented. This development is based on the Tungsten-Schottky interface technology used for the fabrication of stable SiC Schottky diodes for the European Space Agency Mission BepiColombo.

40 CFR 432.1 - General Applicability.

Code of Federal Regulations, 2011 CFR

2011-07-01

... STANDARDS MEAT AND POULTRY PRODUCTS POINT SOURCE CATEGORY § 432.1 General Applicability. As defined more... the following industrial classification codes: Standard industrial classification 1 North Americanindustrial classification system 2 SIC 0751 NAICS 311611. SIC 2011 NAICS 311612. SIC 2013 NAICS 311615. SIC...

Process for the homoepitaxial growth of single-crystal silicon carbide films on silicon carbide wafers

NASA Technical Reports Server (NTRS)

Powell, J. Anthony (Inventor)

1993-01-01

The invention is a method for growing homoepitaxial films of SiC on low tilt angle vicinal (0001) SiC wafers. The invention proposes and teaches a new theoretical model for the homoepitaxial growth of SiC films on (0001) SiC substrates. The inventive method consists of preparing the growth surface of SiC wafers slightly off-axis (from less the 0.1 to 6 deg) from the (0001) plane, subjecting the growth surface to a suitable etch, and then growing the homoepitaxial film using conventional SiC growth techniques.

Influence of CO annealing in metal-oxide-semiconductor capacitors with SiO2 films thermally grown on Si and on SiC

NASA Astrophysics Data System (ADS)

Pitthan, E.; dos Reis, R.; Corrêa, S. A.; Schmeisser, D.; Boudinov, H. I.; Stedile, F. C.

2016-01-01

Understanding the influence of SiC reaction with CO, a by-product of SiC thermal oxidation, is a key point to elucidate the origin of electrical defects in SiC metal-oxide-semiconductor (MOS) devices. In this work, the effects on electrical, structural, and chemical properties of SiO2/Si and SiO2/SiC structures submitted to CO annealing were investigated. It was observed that long annealing times resulted in the incorporation of carbon from CO in the Si substrate, followed by deterioration of the SiO2/Si interface, and its crystallization as SiC. Besides, this incorporated carbon remained in the Si surface (previous SiO2/Si region) after removal of the silicon dioxide film by HF etching. In the SiC case, an even more defective surface region was observed due to the CO interaction. All MOS capacitors formed using both semiconductor materials presented higher leakage current and generation of positive effective charge after CO annealings. Such results suggest that the negative fixed charge, typically observed in SiO2/SiC structures, is not originated from the interaction of the CO by-product, formed during SiC oxidation, with the SiO2/SiC interfacial region.

A combustion products analyzer for contingency use during thermodegradation events on spacecraft

NASA Technical Reports Server (NTRS)

Wilson, Steve; Limero, Thomas F.; Beck, Steve W.; James, John T.

1993-01-01

The Toxicology Laboratory at JSC and Exidyne Instrumentation Technologies (EIT) have developed a prototype Combustion Products Analyzer (CPA) to monitor, in real time, combustion products from a thermodegradation event on board spacecraft. The CPA monitors the four gases that are the most hazardous compounds (based on the toxicity potential and quantity produced) likely to be released during thermodegradation of synthetic materials: hydrogen fluoride (HF), hydrogen chloride (HCl), hydrogen cyanide (HCN), and carbon monoxide (CO). The levels of these compounds serve as markers to assist toxicologists in determining when the cabin atmosphere is safe for the crew to breathe following the contingency event. The CPA is a hand-held, battery-operated instrument containing four electrochemical sensors, one for each target gas, and a pump for drawing air across the sensors. The sensors are unique in their small size and zero-g compatibility. The immobilized electrolytes in each sensor permit the instrument to function in space and eliminate the possibility of electrolye leaks. The sample inlet system is equipped with a particulate filter that prevents clogging from airborne particulate matter. The CPA has a large digital display for gas concentrations and warming signals for low flow and low battery conditions. The CPA has flown on 13 missions beginning with STS 41 in Oct. 1990. Current efforts include the development of a microprocessor, an improved carbon monoxide sensor, and a ground-based test program to evaluate the CPA during actual thermodegradation of selected materials.

Advanced Sensor Arrays and Packaging

DOE Office of Scientific and Technical Information (OSTI.GOV)

Ryter, John Wesley; Romero, Christopher J.; Ramaiyan, Kannan

2016-08-11

Novel sensor packaging elements were designed, fabricated, and tested in order to facilitate the transition of electrochemical mixed-potential sensors toward commercialization. Of the two designs completed, the first is currently undergoing field trials, taking direct measurements within vehicle exhaust streams, while the second is undergoing preliminary laboratory testing. The sensors’ optimal operating conditions, sensitivity to hydrogen, and long-­term baseline stability were also investigated. The sensing capabilities of lanthanum chromite (La 0.8Sr 0.2CrO 3) and indium-­doped tin oxide (ITO) working electrodes were compared, and the ITO devices were selected for pre-­commercial field trials testing at a hydrogen fuel cell vehicle fuelingmore » station in California. Previous data from that fueling station were also analyzed, and the causes of anomalous baseline drift were identified.« less

Heat flux microsensor measurements

NASA Technical Reports Server (NTRS)

Terrell, J. P.; Hager, J. M.; Onishi, S.; Diller, T. E.

1992-01-01

A thin-film heat flux sensor has been fabricated on a stainless steel substrate. The thermocouple elements of the heat flux sensor were nickel and nichrome, and the temperature resistance sensor was platinum. The completed heat flux microsensor was calibrated at the AEDC radiation facility. The gage output was linear with heat flux with no apparent temperature effect on sensitivity. The gage was used for heat flux measurements at the NASA Langley Vitiated Air Test Facility. Vitiated air was expanded to Mach 3.0 and hydrogen fuel was injected. Measurements were made on the wall of a diverging duct downstream of the injector during all stages of the hydrogen combustion tests. Because the wall and the gage were not actively cooled, the wall temperature reached over 1000 C (1900 F) during the most severe test.

Extended range chemical sensing apparatus

DOEpatents

Hughes, R.C.; Schubert, W.K.

1994-01-18

An apparatus is described for sensing chemicals over extended range of concentrations. In particular, first and second sensors each having separate, but overlapping ranges for sensing concentrations of hydrogen are provided. Preferably, the first sensor is a MOS solid state device wherein the metal electrode or gate is a nickel alloy. The second sensor is a chemiresistor comprising a nickel alloy. 6 figures.

Integrated control and health management. Orbit transfer rocket engine technology program

NASA Technical Reports Server (NTRS)

Holzmann, Wilfried A.; Hayden, Warren R.

1988-01-01

To insure controllability of the baseline design for a 7500 pound thrust, 10:1 throttleable, dual expanded cycle, Hydrogen-Oxygen, orbit transfer rocket engine, an Integrated Controls and Health Monitoring concept was developed. This included: (1) Dynamic engine simulations using a TUTSIM derived computer code; (2) analysis of various control methods; (3) Failure Modes Analysis to identify critical sensors; (4) Survey of applicable sensors technology; and, (5) Study of Health Monitoring philosophies. The engine design was found to be controllable over the full throttling range by using 13 valves, including an oxygen turbine bypass valve to control mixture ratio, and a hydrogen turbine bypass valve, used in conjunction with the oxygen bypass to control thrust. Classic feedback control methods are proposed along with specific requirements for valves, sensors, and the controller. Expanding on the control system, a Health Monitoring system is proposed including suggested computing methods and the following recommended sensors: (1) Fiber optic and silicon bearing deflectometers; (2) Capacitive shaft displacement sensors; and (3) Hot spot thermocouple arrays. Further work is needed to refine and verify the dynamic simulations and control algorithms, to advance sensor capabilities, and to develop the Health Monitoring computational methods.

Effects of varying oxygen partial pressure on molten silicon-ceramic substrate interactions

NASA Technical Reports Server (NTRS)

Ownby, D. P.; Barsoum, M. W.

1980-01-01

The silicon sessile drop contact angle was measured on hot pressed silicon nitride, silicon nitride coated on hot pressed silicon nitride, silicon carbon coated on graphite, and on Sialon to determine the degree to which silicon wets these substances. The post-sessile drop experiment samples were sectioned and photomicrographs were taken of the silicon-substrate interface to observe the degree of surface dissolution and degradation. Of these materials, silicon did not form a true sessile drop on the SiC on graphite due to infiltration of the silicon through the SiC coating, nor on the Sialon due to the formation of a more-or-less rigid coating on the liquid silicon. The most wetting was obtained on the coated Si3N4 with a value of 42 deg. The oxygen concentrations in a silicon ribbon furnace and in a sessile drop furnace were measured using the protable thoria-yttria solid solution electrolyte oxygen sensor. Oxygen partial pressures of 10 to the minus 7 power atm and 10 to the minus 8 power atm were obtained at the two facilities. These measurements are believed to represent nonequilibrium conditions.

Polyaniline assisted by TiO2:SnO2 nanoparticles as a hydrogen gas sensor at environmental conditions

NASA Astrophysics Data System (ADS)

Nasirian, Shahruz; Milani Moghaddam, Hossain

2015-02-01

In the present research, polyaniline assisted by TiO2:SnO2 nanoparticles was synthesized and deposited onto an epoxy glass substrate with Cu-interdigited electrodes for gas sensing application. To examine the efficiency of the polyaniline/TiO2:SnO2 nanocomposite (PTS) as a hydrogen (H2) gas sensor, its nature, stability, response, recovery/response time have been studied with a special focus on its ability to work at environmental conditions. H2 gas sensing results demonstrated that a PTS sensor with 20 and 10 wt% of anatase-TiO2 and SnO2 nanoparticles, respectively, has the best response time (75 s) with a recovery time of 117 s at environmental conditions. The highest (lowest) response (recovery time) was 6.18 (46 s) in PTS sensor with 30 and 15 wt% of anatase- (rutile-)TiO2 and SnO2 nanoparticles, respectively, at 0.8 vol.% H2 gas. Further, the H2 gas sensing mechanism of PTS sensor has also been studied.

Novel colorimetric sensor for oral malodour.

PubMed

Alagirisamy, Nethaji; Hardas, Sarita S; Jayaraman, Sujatha

2010-02-19

Volatile sulphur compounds are the primary constituents of oral malodour. Quantitative tools for the detection of oral malodour are beneficial to evaluate the intensity of malodour, analyse its causes and monitor the effectiveness of customized treatments. We have developed an objective, cost effective, do-it-yourself colorimetric sensor for oral malodour quantification. The sensor consisted of a sensing solution, a gas sampling unit for collecting a known volume of mouth air and a photometric detector. The sensing solution was iodine and the depletion of iodine on reaction with hydrogen sulphide was detected colorimetrically using starch. The detection limit of the sensor is 0.05 microg L(-1) of hydrogen sulphide, which is fit-for-purpose for oral malodour detection in healthy subjects as well as halitosis patients. Volatile sulphur compounds in mouth air were quantified in healthy human volunteers using this portable sensor and the detected levels were in the range of 0.2-0.4 microg L(-1). There was a good correlation between the VSC levels detected by the colorimetric sensor and halimeter (R(2)=0.934). The developed sensor can be easily fabricated in the laboratory, and it shows high potential to be used as a clinical evaluation tool for oral malodour assessments. Copyright 2009 Elsevier B.V. All rights reserved.

Photoluminescence of etched SiC nanowires

NASA Astrophysics Data System (ADS)

Stewart, Polite D., Jr.; Rich, Ryan; Zerda, T. W.

2010-10-01

SiC nanowires were produced from carbon nanotubes and nanosize silicon powder in a tube furnace at temperatures between 1100^oC and 1350^oC. SiC nanowires had average diameter of 30 nm and very narrow size distribution. The compound possesses a high melting point, high thermal conductivity, and excellent wear resistance. The surface of the SiC nanowires after formation is covered by an amorphous layer. The composition of that layer is not fully understood, but it is believed that in addition to amorphous SiC it contains various carbon and silicon compounds, and SiO2. The objective of the research was to modify the surface structure of these SiC nanowires. Modification of the surface was done using the wet etching method. The etched nanowires were then analyzed using Fourier Transform Infrared spectroscopy (FTIR), transmission electron microscopy (TEM), and photoluminescence (PL). FTIR and TEM analysis provided valid proof that the SiC nanowires were successfully etched. Also, the PL results showed that the SiC nanowire core did possess a fluorescent signal.

Chemical reactivity of CVC and CVD SiC with UO 2 at high temperatures

DOE PAGES

Silva, Chinthaka M.; Katoh, Yutai; Voit, Stewart L.; ...

2015-02-11

Two types of silicon carbide (SiC) synthesized using two different vapor deposition processes were embedded in UO 2 pellets and evaluated for their potential chemical reaction with UO 2. While minor reactivity between chemical-vapor-composited (CVC) SiC and UO 2 was observed at comparatively low temperatures of 1100 and 1300 C, chemical-vapor-deposited (CVD) SiC did not show any such reactivity, according to microstructural investigations. But, both CVD and CVC SiCs showed some reaction with UO 2 at a higher temperature (1500 C). Elemental maps supported by phase maps obtained using electron backscatter diffraction indicated that CVC SiC was more reactive thanmore » CVD SiC at 1500 C. Moreover, this investigation indicated the formation of uranium carbides and uranium silicide chemical phases such as UC, USi 2, and U 3Si 2 as a result of SiC reaction with UO 2.« less

Silicon Carbide Solar Cells Investigated

NASA Technical Reports Server (NTRS)

Bailey, Sheila G.; Raffaelle, Ryne P.

2001-01-01

The semiconductor silicon carbide (SiC) has long been known for its outstanding resistance to harsh environments (e.g., thermal stability, radiation resistance, and dielectric strength). However, the ability to produce device-quality material is severely limited by the inherent crystalline defects associated with this material and their associated electronic effects. Much progress has been made recently in the understanding and control of these defects and in the improved processing of this material. Because of this work, it may be possible to produce SiC-based solar cells for environments with high temperatures, light intensities, and radiation, such as those experienced by solar probes. Electronics and sensors based on SiC can operate in hostile environments where conventional silicon-based electronics (limited to 350 C) cannot function. Development of this material will enable large performance enhancements and size reductions for a wide variety of systems--such as high-frequency devices, high-power devices, microwave switching devices, and high-temperature electronics. These applications would supply more energy-efficient public electric power distribution and electric vehicles, more powerful microwave electronics for radar and communications, and better sensors and controls for cleaner-burning, more fuel-efficient jet aircraft and automobile engines. The 6H-SiC polytype is a promising wide-bandgap (Eg = 3.0 eV) semiconductor for photovoltaic applications in harsh solar environments that involve high-temperature and high-radiation conditions. The advantages of this material for this application lie in its extremely large breakdown field strength, high thermal conductivity, good electron saturation drift velocity, and stable electrical performance at temperatures as high as 600 C. This behavior makes it an attractive photovoltaic solar cell material for devices that can operate within three solar radii of the Sun.

The suitability of silicon carbide for photocatalytic water oxidation

NASA Astrophysics Data System (ADS)

Aslam, M.; Qamar, M. T.; Ahmed, Ikram; Rehman, Ateeq Ur; Ali, Shahid; Ismail, I. M. I.; Hameed, Abdul

2018-04-01

Silicon carbide (SiC), owing to its extraordinary chemical stability and refractory properties, is widely used in the manufacturing industry. Despite the semiconducting nature and morphology-tuned band gap, its efficacy as photocatalysts has not been thoroughly investigated. The current study reports the synthesis, characterization and the evaluation of the capability of silicon carbide for hydrogen generation from water splitting. The optical characterization of the as-synthesized powder exposed the formation of multi-wavelength absorbing entities in synthetic process. The structural analysis by XRD and the fine microstructure analysis by HRTEM revealed the cubic 3C-SiC (β-SiC) and hexagonal α-polymorphs (2H-SiC and 6H-SiC) as major and minor phases, respectively. The Mott-Schottky analysis verified the n-type nature of the material with the flat band potential of - 0.7 V. In the electrochemical evaluation, the sharp increase in the peak currents in various potential ranges, under illumination, revealed the plausible potential of the material for the oxidation of water and generation of hydrogen. The generation of hydrogen and oxygen, as a consequence of water splitting in the actual photocatalytic experiments, was observed and measured. A significant increase in the yield of hydrogen was noticed in the presence of methanol as h + scavenger, whereas a retarding effect was offered by the Fe3+ entities that served as e - scavengers. The combined effect of both methanol and Fe3+ ions in the photocatalytic process was also investigated. Besides hydrogen gas, the other evolved gasses such as methane and carbon monoxide were also measured to estimate the mechanism of the process.

Porous silicon carbide (SiC) semiconductor device

NASA Technical Reports Server (NTRS)

Shor, Joseph S. (Inventor); Kurtz, Anthony D. (Inventor)

1994-01-01

A semiconductor device employs at least one layer of semiconducting porous silicon carbide (SiC). The porous SiC layer has a monocrystalline structure wherein the pore sizes, shapes, and spacing are determined by the processing conditions. In one embodiment, the semiconductor device is a p-n junction diode in which a layer of n-type SiC is positioned on a p-type layer of SiC, with the p-type layer positioned on a layer of silicon dioxide. Because of the UV luminescent properties of the semiconducting porous SiC layer, it may also be utilized for other devices such as LEDs and optoelectronic devices.

Diodes of nanocrystalline SiC on n-/n+-type epitaxial crystalline 6H-SiC

NASA Astrophysics Data System (ADS)

Zheng, Junding; Wei, Wensheng; Zhang, Chunxi; He, Mingchang; Li, Chang

2018-03-01

The diodes of nanocrystalline SiC on epitaxial crystalline (n-/n+)6H-SiC wafers were investigated, where the (n+)6H-SiC layer was treated as cathode. For the first unit, a heavily boron doped SiC film as anode was directly deposited by plasma enhanced chemical vapor deposition method on the wafer. As to the second one, an intrinsic SiC film was fabricated to insert between the wafer and the SiC anode. The third one included the SiC anode, an intrinsic SiC layer and a lightly phosphorus doped SiC film besides the wafer. Nanocrystallization in the yielded films was illustrated by means of X-ray diffraction, transmission electronic microscope and Raman spectrum respectively. Current vs. voltage traces of the obtained devices were checked to show as rectifying behaviors of semiconductor diodes, the conduction mechanisms were studied. Reverse recovery current waveforms were detected to analyze the recovery performance. The nanocrystalline SiC films in base region of the fabricated diodes are demonstrated as local regions for lifetime control of minority carriers to improve the reverse recovery properties.

Palladium configuration dependence of hydrogen detection sensitivity based on graphene FET for breath analysis

NASA Astrophysics Data System (ADS)

Sakamoto, Yuri; Uemura, Kohei; Ikuta, Takashi; Maehashi, Kenzo

2018-04-01

We have succeeded in fabricating a hydrogen gas sensor based on palladium-modified graphene field-effect transistors (FETs). The negative-voltage shift in the transfer characteristics was observed with exposure to hydrogen gas, which was explained by the change in work function. The hydrogen concentration dependence of the voltage shift was investigated using graphene FETs with palladium deposited by three different evaporation processes. The results indicate that the hydrogen detection sensitivity of the palladium-modified graphene FETs is strongly dependent on the palladium configuration. Therefore, the palladium-modified graphene FET is a candidate for breath analysis.

Self-Interaction Corrected Electronic Structure and Energy Gap of CuAlO2 beyond Local Density Approximation

NASA Astrophysics Data System (ADS)

Nakanishi, Akitaka

2011-05-01

We implemented a self-interaction correction (SIC) into first-principles calculation code to go beyond local density approximation and applied it to CuAlO2. Our simulation shows that the valence band width calculated within the SIC is narrower than that calculated without the SIC because the SIC makes the d-band potential deeper. The energy gap calculated within the SIC expands and is close to experimental data.

Absolute pressure transducers for space shuttle and orbiter propulsion and control systems

NASA Technical Reports Server (NTRS)

Bolta, J. J.

1974-01-01

A preliminary design was completed, reviewing of such subjects as: the trade studies for media isolation and one sensor vs. two sensors for two bridges; compensation resistors; unit design; hydrogen embrittlement; sealing techniques and test station design. A design substantiation phase was finished, consisting of testing of a prototype unit and fabrication technique studies. A cryogenic test station was implemented and prototype sensor cells were fabricated, sensors assembled, and cryogenic tests performed.

Effects of in situ synthesized mullite whisker on mechanical properties of Al2O3-SiC composite by microwave sintering

NASA Astrophysics Data System (ADS)

Dang, Xudan; Wei, Meng; Fan, Bingbing; Guan, Keke; Zhang, Rui; Long, Weimin; Zhang, Hongsong

2017-06-01

In situ synthesis of mullite whisker was introduced to Al2O3-SiC composite by microwave sintering. The effects of sintering parameters (sintering temperature, holding time and SiC particle size) on thermal shock resistance of Al2O3-SiC composite were also studied in this paper. Original SiC particles coated with SiO2 by a sol-gel method were reacted with Al2O3 particles, resulting in the in situ growth of mullite. The phase composition was identified by x-ray diffraction (XRD). The bridging of mullite whisker between Al2O3 and SiC particles was observed by scanning electron microscopy (SEM) analysis. The thermal shock resistance of samples was investigated through the combination of water quenching and three-point bending methods. The results show that the thermal shock resistance of Al2O3-SiC composite with mullite whisker reinforced remarkably, indicating better mechanical properties than the Al2O3-SiC composite without mullite whisker. Finally, the optimum process parameters (the sintering temperature of 1500 °C, the holding time of 30 min, and the SiC particle size of 5 µm) for toughening Al2O3-SiC composite by in situ synthesized mullite whisker were obtained.

An Improved Metal-Packaged Strain Sensor Based on A Regenerated Fiber Bragg Grating in Hydrogen-Loaded Boron–Germanium Co-Doped Photosensitive Fiber for High-Temperature Applications

PubMed Central

Tu, Yun; Ye, Lin; Zhou, Shao-Ping; Tu, Shan-Tung

2017-01-01

Local strain measurements are considered as an effective method for structural health monitoring of high-temperature components, which require accurate, reliable and durable sensors. To develop strain sensors that can be used in higher temperature environments, an improved metal-packaged strain sensor based on a regenerated fiber Bragg grating (RFBG) fabricated in hydrogen (H2)-loaded boron–germanium (B–Ge) co-doped photosensitive fiber is developed using the process of combining magnetron sputtering and electroplating, addressing the limitation of mechanical strength degradation of silica optical fibers after annealing at a high temperature for regeneration. The regeneration characteristics of the RFBGs and the strain characteristics of the sensor are evaluated. Numerical simulation of the sensor is conducted using a three-dimensional finite element model. Anomalous decay behavior of two regeneration regimes is observed for the FBGs written in H2-loaded B–Ge co-doped fiber. The strain sensor exhibits good linearity, stability and repeatability when exposed to constant high temperatures of up to 540 °C. A satisfactory agreement is obtained between the experimental and numerical results in strain sensitivity. The results demonstrate that the improved metal-packaged strain sensors based on RFBGs in H2-loaded B–Ge co-doped fiber provide great potential for high-temperature applications by addressing the issues of mechanical integrity and packaging. PMID:28241465

An Improved Metal-Packaged Strain Sensor Based on A Regenerated Fiber Bragg Grating in Hydrogen-Loaded Boron-Germanium Co-Doped Photosensitive Fiber for High-Temperature Applications.

PubMed

Tu, Yun; Ye, Lin; Zhou, Shao-Ping; Tu, Shan-Tung

2017-02-23

Local strain measurements are considered as an effective method for structural health monitoring of high-temperature components, which require accurate, reliable and durable sensors. To develop strain sensors that can be used in higher temperature environments, an improved metal-packaged strain sensor based on a regenerated fiber Bragg grating (RFBG) fabricated in hydrogen (H₂)-loaded boron-germanium (B-Ge) co-doped photosensitive fiber is developed using the process of combining magnetron sputtering and electroplating, addressing the limitation of mechanical strength degradation of silica optical fibers after annealing at a high temperature for regeneration. The regeneration characteristics of the RFBGs and the strain characteristics of the sensor are evaluated. Numerical simulation of the sensor is conducted using a three-dimensional finite element model. Anomalous decay behavior of two regeneration regimes is observed for the FBGs written in H₂-loaded B-Ge co-doped fiber. The strain sensor exhibits good linearity, stability and repeatability when exposed to constant high temperatures of up to 540 °C. A satisfactory agreement is obtained between the experimental and numerical results in strain sensitivity. The results demonstrate that the improved metal-packaged strain sensors based on RFBGs in H₂-loaded B-Ge co-doped fiber provide great potential for high-temperature applications by addressing the issues of mechanical integrity and packaging.

Hydrogen Research for Spaceport and Space-Based Applications: Fuel Cell Projects

NASA Technical Reports Server (NTRS)

Anderson, Tim; Balaban, Canan

2008-01-01

The activities presented are a broad based approach to advancing key hydrogen related technologies in areas such as fuel cells, hydrogen production, and distributed sensors for hydrogen-leak detection, laser instrumentation for hydrogen-leak detection, and cryogenic transport and storage. Presented are the results from research projects, education and outreach activities, system and trade studies. The work will aid in advancing the state-of-the-art for several critical technologies related to the implementation of a hydrogen infrastructure. Activities conducted are relevant to a number of propulsion and power systems for terrestrial, aeronautics and aerospace applications. Fuel cell research focused on proton exchange membranes (PEM), solid oxide fuel cells (SOFC). Specific technologies included aircraft fuel cell reformers, new and improved electrodes, electrolytes, interconnect, and seals, modeling of fuel cells including CFD coupled with impedance spectroscopy. Research was conducted on new materials and designs for fuel cells, along with using embedded sensors with power management electronics to improve the power density delivered by fuel cells. Fuel cell applications considered were in-space operations, aviation, and ground-based fuel cells such as; powering auxiliary power units (APUs) in aircraft; high power density, long duration power supplies for interplanetary missions (space science probes and planetary rovers); regenerative capabilities for high altitude aircraft; and power supplies for reusable launch vehicles.

Demonstration of a Packaged Capacitive Pressure Sensor System Suitable for Jet Turbofan Engine Health Monitoring

NASA Technical Reports Server (NTRS)

Scardelletti, Maximilian C.; Jordan, Jennifer L.; Meredith, Roger D.; Harsh, Kevin; Pilant, Evan; Usrey, Michael W.; Beheim, Glenn M.; Hunter, Gary W.; Zorman, Christian A.

2016-01-01

In this paper, the development and characterization of a packaged pressure sensor system suitable for jet engine health monitoring is demonstrated. The sensing system operates from 97 to 117 MHz over a pressure range from 0 to 350 psi and a temperature range from 25 to 500 deg. The sensing system consists of a Clapp-type oscillator that is fabricated on an alumina substrate and is comprised of a Cree SiC MESFET, MIM capacitors, a wire-wound inductor, chip resistors and a SiCN capacitive pressure sensor. The pressure sensor is located in the LC tank circuit of the oscillator so that a change in pressure causes a change in capacitance, thus changing the resonant frequency of the sensing system. The chip resistors, wire-wound inductors and MIM capacitors have all been characterized at temperature and operational frequency, and perform with less than 5% variance in electrical performance. The measured capacitive pressure sensing system agrees very well with simulated results. The packaged pressure sensing system is specifically designed to measure the pressure on a jet turbofan engine. The packaged system can be installed by way of borescope plug adaptor fitted to a borescope port exposed to the gas path of a turbofan engine.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Wu, Amanda S.; Brosha, Eric

This is a progress report for the demonstration of a prototype hydrogen sensor and electronics package. There are five tasks associated with this, and four have been completed as of August 2016: Station Demonstration and Site Recommendation, Order Sensor Equipment, Build Sensors, and Install Sensors. The final task to be completed is Sensor Demonstration and Data Analysis, and expected completion date is January 26, 2017. This progress report details each of the tasks and goes into detail about what is currently being worked on, along with the budget and planned work for July 27, 2016 to January 26, 2017.

Microfabricated Chemical Sensors for Safety and Emission Control Applications

NASA Technical Reports Server (NTRS)

Hunter, G. W.; Neudeck, P. G.; Chen, L.-Y.; Knight, D.; Liu, C. C.; Wu, Q. H.

1998-01-01

Chemical sensor technology is being developed for leak detection, emission monitoring, and fire safety applications. The development of these sensors is based on progress in two types of technology: 1) Micromachining and microfabrication (MicroElectroMechanical Systems (MEMS)-based) technology to fabricate miniaturized sensors. 2) The development of high temperature semiconductors, especially silicon carbide. Using these technologies, sensors to measure hydrogen, hydrocarbons, nitrogen oxides, carbon monoxide, oxygen, and carbon dioxide are being developed. A description is given of each sensor type and its present stage of development. It is concluded that microfabricated sensor technology has significant potential for use in a range of aerospace applications.

Red fluorescent genetically encoded indicator for intracellular hydrogen peroxide

NASA Astrophysics Data System (ADS)

Ermakova, Yulia G.; Bilan, Dmitry S.; Matlashov, Mikhail E.; Mishina, Natalia M.; Markvicheva, Ksenia N.; Subach, Oksana M.; Subach, Fedor V.; Bogeski, Ivan; Hoth, Markus; Enikolopov, Grigori; Belousov, Vsevolod V.

2014-10-01

Reactive oxygen species (ROS) are conserved regulators of numerous cellular functions, and overproduction of ROS is a hallmark of various pathological processes. Genetically encoded fluorescent probes are unique tools to study ROS production in living systems of different scale and complexity. However, the currently available recombinant redox sensors have green emission, which overlaps with the spectra of many other probes. Expanding the spectral range of recombinant in vivo ROS probes would enable multiparametric in vivo ROS detection. Here we present the first genetically encoded red fluorescent sensor for hydrogen peroxide detection, HyPerRed. The performance of this sensor is similar to its green analogues. We demonstrate the utility of the sensor by tracing low concentrations of H2O2 produced in the cytoplasm of cultured cells upon growth factor stimulation. Moreover, using HyPerRed we detect local and transient H2O2 production in the mitochondrial matrix upon inhibition of the endoplasmic reticulum Ca2+ uptake.