Conformal Thin Film Packaging for SiC Sensor Circuits in Harsh Environments

NASA Technical Reports Server (NTRS)

Scardelletti, Maximilian C.; Karnick, David A.; Ponchak, George E.; Zorman, Christian A.

2011-01-01

In this investigation sputtered silicon carbide annealed at 300 C for one hour is used as a conformal thin film package. A RF magnetron sputterer was used to deposit 500 nm silicon carbide films on gold metal structures on alumina wafers. To determine the reliability and resistance to immersion in harsh environments, samples were submerged in gold etchant for 24 hours, in BOE for 24 hours, and in an O2 plasma etch for one hour. The adhesion strength of the thin film was measured by a pull test before and after the chemical immersion, which indicated that the film has an adhesion strength better than 10(exp 8) N/m2; this is similar to the adhesion of the gold layer to the alumina wafer. MIM capacitors are used to determine the dielectric constant, which is dependent on the SiC anneal temperature. Finally, to demonstrate that the SiC, conformal, thin film may be used to package RF circuits and sensors, an LC resonator circuit was fabricated and tested with and without the conformal SiC thin film packaging. The results indicate that the SiC coating adds no appreciable degradation to the circuits RF performance. Index Terms Sputter, silicon carbide, MIM capacitors, LC resonators, gold etchants, BOE, O2 plasma

Packaging Technologies for 500 C SiC Electronics and Sensors: Challenges in Material Science and Technology

NASA Technical Reports Server (NTRS)

Chen, Liang-Yu; Neudeck, Philip G.; Behelm, Glenn M.; Spry, David J.; Meredith, Roger D.; Hunter, Gary W.

2015-01-01

This paper presents ceramic substrates and thick-film metallization based packaging technologies in development for 500C silicon carbide (SiC) electronics and sensors. Prototype high temperature ceramic chip-level packages and printed circuit boards (PCBs) based on ceramic substrates of aluminum oxide (Al2O3) and aluminum nitride (AlN) have been designed and fabricated. These ceramic substrate-based chip-level packages with gold (Au) thick-film metallization have been electrically characterized at temperatures up to 550C. The 96 alumina packaging system composed of chip-level packages and PCBs has been successfully tested with high temperature SiC discrete transistor devices at 500C for over 10,000 hours. In addition to tests in a laboratory environment, a SiC junction field-effect-transistor (JFET) with a packaging system composed of a 96 alumina chip-level package and an alumina printed circuit board was tested on low earth orbit for eighteen months via a NASA International Space Station experiment. In addition to packaging systems for electronics, a spark-plug type sensor package based on this high temperature interconnection system for high temperature SiC capacitive pressure sensors was also developed and tested. In order to further significantly improve the performance of packaging system for higher packaging density, higher operation frequency, power rating, and even higher temperatures, some fundamental material challenges must be addressed. This presentation will discuss previous development and some of the challenges in material science (technology) to improve high temperature dielectrics for packaging applications.

Thin film hydrogen sensor

DOEpatents

Lauf, R.J.; Hoffheins, B.S.; Fleming, P.H.

1994-11-22

A hydrogen sensor element comprises an essentially inert, electrically-insulating substrate having a thin-film metallization deposited thereon which forms at least two resistors on the substrate. The metallization comprises a layer of Pd or a Pd alloy for sensing hydrogen and an underlying intermediate metal layer for providing enhanced adhesion of the metallization to the substrate. An essentially inert, electrically insulating, hydrogen impermeable passivation layer covers at least one of the resistors, and at least one of the resistors is left uncovered. The difference in electrical resistances of the covered resistor and the uncovered resistor is related to hydrogen concentration in a gas to which the sensor element is exposed. 6 figs.

Integrated Temperature and Hydrogen Sensors with MEMS Technology

PubMed Central

Jiang, Hongchuan; Huang, Min; Yu, Yibing; Tian, Xiaoyu; Zhang, Wanli; Zhang, Jianfeng; Huang, Yifan; Yu, Kun

2017-01-01

In this work, a PdNi thin film hydrogen gas sensor with integrated Pt thin film temperature sensor was designed and fabricated using the micro-electro-mechanical system (MEMS) process. The integrated sensors consist of two resistors: the former, based on Pt film, is used as a temperature sensor, while the latter had the function of hydrogen sensing and is based on PdNi alloy film. The temperature coefficient of resistance (TCR) in both devices was measured and the output response of the PdNi film hydrogen sensor was calibrated based on the temperature acquired by the Pt temperature sensor. The SiN layer was deposited on top of Pt film to inhibit the hydrogen diffusion and reduce consequent disturbance on temperature measurement. The TCR of the PdNi film and the Pt film was about 0.00122/K and 0.00217/K, respectively. The performances of the PdNi film hydrogen sensor were investigated with hydrogen concentrations from 0.3% to 3% on different temperatures from 294.7 to 302.2 K. With the measured temperature of the Pt resistor and the TCR of the PdNi film, the impact of the temperature on the performances of the PdNi film hydrogen sensor was reduced. The output response, response time and recovery time of the PdNi film hydrogen sensors under the hydrogen concentration of 0.5%, 1.0%, 1.5% and 2.0% were measured at 313 K. The output response of the PdNi thin film hydrogen sensors increased with increasing hydrogen concentration while the response time and recovery time decreased. A cycling test between pure nitrogen and 3% hydrogen concentration was performed at 313 K and PdNi thin film hydrogen sensor demonstrated great repeatability in the cycling test. PMID:29301220

OGS Hydrogen Sensor ORU R&R

NASA Image and Video Library

2012-04-18

ISS030-E-236919 (18 April 2012) --- NASA astronaut Dan Burbank, Expedition 30 commander, works with the Oxygen Generator System (OGS) rack in the Tranquility node of the International Space Station. Burbank unpowered the OGS, purged the hydrogen sensor Orbital Replacement Unit (ORU) with the Hydrogen Sensor ORU Purge Adapter (HOPA) for return to Earth, and replaced the hydrogen sensor with a new spare, then cleaned the rack Avionics Air Assembly (AAA).

Planar SiC MEMS flame ionization sensor for in-engine monitoring

NASA Astrophysics Data System (ADS)

Rolfe, D. A.; Wodin-Schwartz, S.; Alonso, R.; Pisano, A. P.

2013-12-01

A novel planar silicon carbide (SiC) MEMS flame ionization sensor was developed, fabricated and tested to measure the presence of a flame from the surface of an engine or other cooled surface while withstanding the high temperature and soot of a combustion environment. Silicon carbide, a ceramic semiconductor, was chosen as the sensor material because it has low surface energy and excellent mechanical and electrical properties at high temperatures. The sensor measures the conductivity of scattered charge carriers in the flame's quenching layer. This allows for flame detection, even when the sensor is situated several millimetres from the flame region. The sensor has been shown to detect the ionization of premixed methane and butane flames in a wide temperature range starting from room temperature. The sensors can measure both the flame chemi-ionization and the deposition of water vapour on the sensor surface. The width and speed of a premixed methane laminar flame front were measured with a series of two sensors fabricated on a single die. This research points to the feasibility of using either single sensors or arrays in internal combustion engine cylinders to optimize engine performance, or for using sensors to monitor flame stability in gas turbine applications.

Hydrogen gas sensor and method of manufacture

DOEpatents

McKee, John M.

1991-01-01

A sensor for measuring the pressure of hydrogen gas in a nuclear reactor, and method of manufacturing the same. The sensor comprises an elongated tube of hydrogen permeable material which is connected to a pressure transducer through a feedthrough tube which passes through a wall at the boundary of the region in which hydrogen is present. The tube is pressurized and flushed with hydrogen gas at an elevated temperature during the manufacture of the sensor in order to remove all gasses other than hydrogen from the device.

Optimization of Thermal Neutron Converter in SiC Sensors for Spectral Radiation Measurements

DOE Office of Scientific and Technical Information (OSTI.GOV)

Krolikowski, Igor; Cetnar, Jerzy; Issa, Fatima

2015-07-01

Optimization of the neutron converter in SiC sensors is presented. The sensors are used for spectral radiation measurements of thermal and fast neutrons and optionally gamma ray at elevated temperature in harsh radiation environment. The neutron converter, which is based on 10B, allows to detect thermal neutrons by means of neutron capture reaction. Two construction of the sensors were used to measure radiation in experiments. Sensor responses collected in experiments have been reproduced by the computer tool created by authors, it allows to validate the tool. The tool creates the response matrix function describing the characteristic of the sensors andmore » it was used for detailed analyses of the sensor responses. Obtained results help to optimize the neutron converter in order to increase thermal neutron detection. Several enhanced construction of the sensors, which includes the neutron converter based on {sup 10}B or {sup 6}Li, were proposed. (authors)« less

Fabrication method for a room temperature hydrogen sensor

NASA Technical Reports Server (NTRS)

Shukla, Satyajit V. (Inventor); Cho, Hyoung (Inventor); Seal, Sudipta (Inventor); Ludwig, Lawrence (Inventor)

2011-01-01

A sensor for selectively determining the presence and measuring the amount of hydrogen in the vicinity of the sensor. The sensor comprises a MEMS device coated with a nanostructured thin film of indium oxide doped tin oxide with an over layer of nanostructured barium cerate with platinum catalyst nanoparticles. Initial exposure to a UV light source, at room temperature, causes burning of organic residues present on the sensor surface and provides a clean surface for sensing hydrogen at room temperature. A giant room temperature hydrogen sensitivity is observed after making the UV source off. The hydrogen sensor of the invention can be usefully employed for the detection of hydrogen in an environment susceptible to the incursion or generation of hydrogen and may be conveniently used at room temperature.

"Un-annealed and Annealed Pd Ultra-Thin Film on SiC Characterized by Scanning Probe Microscopy and X-ray Photoelectron Spectroscopy"

NASA Technical Reports Server (NTRS)

Lu, W. J.; Shi, D. T.; Elshot, K.; Bryant, E.; Lafate, K.; Chen, H.; Burger, A.; Collins, W. E.

1998-01-01

Pd/SiC has been used as a hydrogen and a hydrocarbon gas sensor operated at high temperature. UHV (Ultra High Vacuum)-Scanning Tunneling Microscopy (STM), Atomic Force Microscopy (AFM) and X-ray Photoelectron Spectroscopy (XPS) techniques were applied to study the relationship between the morphology and chemical compositions for Pd ultra-thin films on SiC (less than 30 angstroms) at different annealing temperatures. Pd ultra-thin film on 6H-SiC was prepared by the RF sputtering method. The morphology from UHV-STM and AFM shows that the Pd thin film was well deposited on SiC substrate, and the Pd was partially aggregated to round shaped participates at an annealing temperature of 300 C. At 400 C, the amount of surface participates decreases, and some strap shape participates appear. From XPS, Pd2Si was formed on the surface after annealing at 300 C, and all Pd reacted with SiC to form Pd2Si after annealing at 400 C. The intensity of the XPS Pd peak decreases enormously at 400 C. The Pd film diffused into SiC, and the Schottky barrier height has almost no changes. The work shows the Pd sicilides/SiC have the same electronic properties with Pd/SiC, and explains why the Pd/SiC sensor still responds to hydrogen at high operating temperatures.

Micro-structured femtosecond laser assisted FBG hydrogen sensor.

PubMed

Karanja, Joseph Muna; Dai, Yutang; Zhou, Xian; Liu, Bin; Yang, Minghong

2015-11-30

We discuss hydrogen sensors based on fiber Bragg gratings (FBGs) micro-machined by femtosecond laser to form microgrooves and sputtered with Pd/Ag composite film. The atomic ratio of the two metals is controlled at Pd:Ag = 3:1. At room temperature, the hydrogen sensitivity of the sensor probe micro-machined by 75 mW laser power and sputtered with 520 nm of Pd/Ag film is 16.5 pm/%H. Comparably, the standard FBG hydrogen sensitivity becomes 2.5 pm/%H towards the same 4% hydrogen concentration. At an ambient temperature of 35°C, the processed sensor head has a dramatic rise in hydrogen sensitivity. Besides, the sensor shows good response and repeatability during hydrogen concentration test.

A survey and analysis of commercially available hydrogen sensors

NASA Technical Reports Server (NTRS)

Hunter, Gary W.

1992-01-01

The performance requirements for hydrogen detection in aerospace applications often exceed those of more traditional applications. In order to ascertain the applicability of existing hydrogen sensors to aerospace applications, a survey was conducted of commercially available point-contact hydrogen sensors, and their operation was analyzed. The operation of the majority of commercial hydrogen sensors falls into four main categories: catalytic combustion, electrochemical, semiconducting oxide sensors, and thermal conductivity detectors. The physical mechanism involved in hydrogen detection for each main category is discussed in detail. From an understanding of the detection mechanism, each category of sensor is evaluated for use in a variety of space and propulsion environments. In order to meet the needs of aerospace applications, the development of point-contact hydrogen sensors that are based on concepts beyond those used in commercial sensors is necessary.

Sensitive Capacitive-type Hydrogen Sensor Based on Ni Thin Film in Different Hydrogen Concentrations.

PubMed

Pour, Ghobad Behzadi; Aval, Leila Fekri; Eslami, Shahnaz

2018-04-01

Hydrogen sensors are micro/nano-structure that are used to locate hydrogen leaks. They are considered to have fast response/recovery time and long lifetime as compared to conventional gas sensors. In this paper, fabrication of sensitive capacitive-type hydrogen gas sensor based on Ni thin film has been investigated. The C-V curves of the sensor in different hydrogen concentrations have been reported. Dry oxidation was done in thermal chemical vapor deposition furnace (TCVD). For oxidation time of 5 min, the oxide thickness was 15 nm and for oxidation time 10 min, it was 20 nm. The Ni thin film as a catalytic metal was deposited on the oxide film using electron gun deposition. Two MOS sensors were compared with different oxide film thickness and different hydrogen concentrations. The highest response of the two MOS sensors with 15 nm and 20 nm oxide film thickness in 4% hydrogen concentration was 87.5% and 65.4% respectively. The fast response times for MOS sensors with 15 nm and 20 nm oxide film thickness in 4% hydrogen concentration was 8 s and 21 s, respectively. By increasing the hydrogen concentration from 1% to 4%, the response time for MOS sensor (20nm oxide thickness), was decreased from 28s to 21s. The recovery time was inversely increased from 237s to 360s. The experimental results showed that the MOS sensor based on Ni thin film had a quick response and a high sensitivity.

Microfabricated Hydrogen Sensor Technology for Aerospace and Commercial Applications

NASA Technical Reports Server (NTRS)

Hunter, Gary W.; Bickford, R. L.; Jansa, E. D.; Makel, D. B.; Liu, C. C.; Wu, Q. H.; Powers, W. T.

1994-01-01

Leaks on the Space Shuttle while on the Launch Pad have generated interest in hydrogen leak monitoring technology. An effective leak monitoring system requires reliable hydrogen sensors, hardware, and software to monitor the sensors. The system should process the sensor outputs and provide real-time leak monitoring information to the operator. This paper discusses the progress in developing such a complete leak monitoring system. Advanced microfabricated hydrogen sensors are being fabricated at Case Western Reserve University (CWRU) and tested at NASA Lewis Research Center (LeRC) and Gencorp Aerojet (Aerojet). Changes in the hydrogen concentrations are detected using a PdAg on silicon Schottky diode structure. Sensor temperature control is achieved with a temperature sensor and heater fabricated onto the sensor chip. Results of the characterization of these sensors are presented. These sensors can detect low concentrations of hydrogen in inert environments with high sensitivity and quick response time. Aerojet is developing the hardware and software for a multipoint leak monitoring system designed to provide leak source and magnitude information in real time. The monitoring system processes data from the hydrogen sensors and presents the operator with a visual indication of the leak location and magnitude. Work has commenced on integrating the NASA LeRC-CWRU hydrogen sensors with the Aerojet designed monitoring system. Although the leak monitoring system was designed for hydrogen propulsion systems, the possible applications of this monitoring system are wide ranged. Possible commercialization of the system will also be discussed.

A survey and analysis of experimental hydrogen sensors

NASA Technical Reports Server (NTRS)

Hunter, Gary W.

1992-01-01

In order to ascertain the applicability of hydrogen sensors to aerospace applications, a survey was conducted of promising experimental point-contact hydrogen sensors and their operation was analyzed. The techniques discussed are metal-oxide-semiconductor or MOS based sensors, catalytic resistor sensors, acoustic wave detectors, and pyroelectric detectors. All of these sensors depend on the interaction of hydrogen with Pd or a Pd-alloy. It is concluded that no single technique will meet the needs of aerospace applications but a combination of approaches is necessary. The most promising combination is an MOS based sensor with a catalytic resistor.

Plasmonic hydrogen sensor based on integrated microring resonator

NASA Astrophysics Data System (ADS)

Yi, Ya Sha; Wu, Da Chuan

2017-12-01

We have proposed and demonstrated numerically an ultrasmall and highly sensitive plasmonic hydrogen sensor based on an integrated microring resonator, with a footprint size as small as 4×4 μm2. With a palladium (Pd) or platinum (Pt) hydrogen-sensitive layer coated on the inner surface of the microring resonator and the excitation of surface plasmon modes at the interface from the microring resonator waveguide, the device is highly sensitive to low hydrogen concentration variation, and the sensitivity is at least one order of magnitude larger than that of the optical fiber-based hydrogen sensor. We have also investigated the tradeoff between the portion coverage of the Pd/Pt layer and the sensitivity, as well as the width of the hydrogen-sensitive layer. This ultrasmall plasmonic hydrogen sensor holds promise for the realization of a highly compact sensor with integration capability for applications in hydrogen fuel economy.

Dangling bond defects in SiC: An ab initio study

NASA Astrophysics Data System (ADS)

Tuttle, Blair R.

2018-01-01

We report first-principles microscopic calculations of the properties of defects with dangling bonds in crystalline 3 C -SiC. Specifically, we focus on hydrogenated Si and C vacancies, divacancies, and multivacancies. The latter is a generic model for an isolated dangling bond within a bulk SiC matrix. Hydrogen serves to passivate electrically active defects to allow the isolation of a single dangling-bond defect. We used hybrid density-functional methods to determine energetics and electrical activity. The present results are compared to previous 3 C -SiC calculations and experiments. Finally, we identify homopolar carbon dangling-bond defects as the leakage causing defects in nanoporous SiC alloys.

Hydrogen Safety Sensor Performance and Use Gap Analysis: Preprint

DOE Office of Scientific and Technical Information (OSTI.GOV)

Buttner, William J; Burgess, Robert M; Schmidt, Kara

Hydrogen sensors are recognized as an important technology for facilitating the safe implementation of hydrogen as an alternative fuel, and there are numerous reports of a sensor alarm successfully preventing a potentially serious event. However, gaps in sensor metrological specifications, as well as in their performance for some applications, exist.The U.S. Department of Energy (DOE) Fuel Cell Technology Office published a short list of critical gaps in the 2007 and 2012 multiyear project plans; more detailed gap analyses were independently performed by the JRC and NREL. There have been, however, some significant advances in sensor technologies since these assessments, includingmore » the commercial availability of hydrogen sensors with fast response times (t90 less than 1 s, which had been an elusive DOE target since 2007), improved robustness to chemical poisons, improved selectivity, and improved lifetime and stability. These improvements, however, have not been universal and typically pertain to select platforms or models. Moreover, as hydrogen markets grow and new applications are being explored, more demands will be imposed on sensor performance. The hydrogen sensor laboratories at NREL and JRC are currently updating the hydrogen safety sensor gap analysis through direct interaction with international stakeholders in the hydrogen community, especially end-users. NREL and the JRC are currently organizing a series of workshops (in Europe and the U.S.) with sensor developers, end-users, and other stakeholders in 2017 to identify technology gaps and to develop a path forward to address them. One workshop is scheduled for May 10 in Brussels, Belgium at the Headquarters of the Fuel Cell and Hydrogen Joint Undertaking. A second workshop is planned at the National Renewable Energy Laboratory in Golden, CO, USA. This presentation will review improvements in sensor technologies in the past 5 to 10 years, identify gaps in sensor performance and use requirements, and

Thick film hydrogen sensor

DOEpatents

Hoffheins, Barbara S.; Lauf, Robert J.

1995-01-01

A thick film hydrogen sensor element includes an essentially inert, electrically-insulating substrate having deposited thereon a thick film metallization forming at least two resistors. The metallization is a sintered composition of Pd and a sinterable binder such as glass frit. An essentially inert, electrically insulating, hydrogen impermeable passivation layer covers at least one of the resistors.

Thick film hydrogen sensor

DOEpatents

Hoffheins, B.S.; Lauf, R.J.

1995-09-19

A thick film hydrogen sensor element includes an essentially inert, electrically-insulating substrate having deposited thereon a thick film metallization forming at least two resistors. The metallization is a sintered composition of Pd and a sinterable binder such as glass frit. An essentially inert, electrically insulating, hydrogen impermeable passivation layer covers at least one of the resistors. 8 figs.

Hydrogen Sensors Boost Hybrids; Today's Models Losing Gas?

NASA Technical Reports Server (NTRS)

2005-01-01

Advanced chemical sensors are used in aeronautic and space applications to provide safety monitoring, emission monitoring, and fire detection. In order to fully do their jobs, these sensors must be able to operate in a range of environments. NASA has developed sensor technologies addressing these needs with the intent of improving safety, optimizing combustion efficiencies, and controlling emissions. On the ground, the chemical sensors were developed by NASA engineers to detect potential hydrogen leaks during Space Shuttle launch operations. The Space Shuttle uses a combination of hydrogen and oxygen as fuel for its main engines. Liquid hydrogen is pumped to the external tank from a storage tank located several hundred feet away. Any hydrogen leak could potentially result in a hydrogen fire, which is invisible to the naked eye. It is important to detect the presence of a hydrogen fire in order to prevent a major accident. In the air, the same hydrogen-leak dangers are present. Stress and temperature changes can cause tiny cracks or holes to form in the tubes that line the Space Shuttle s main engine nozzle. Such defects could allow the hydrogen that is pumped through the nozzle during firing to escape. Responding to the challenges associated with pinpointing hydrogen leaks, NASA endeavored to improve propellant leak-detection capabilities during assembly, pre-launch operations, and flight. The objective was to reduce the operational cost of assembling and maintaining hydrogen delivery systems with automated detection systems. In particular, efforts have been focused on developing an automated hydrogen leak-detection system using multiple, networked hydrogen sensors that are operable in harsh conditions.

Color Changing Hydrogen Sensors

NASA Technical Reports Server (NTRS)

Roberson, Luke B.; Williams, Martha; Captain, Janine E.; Mohajeri, Nahid; Raissi, Ali

2015-01-01

During the Space Shuttle Program, one of the most hazardous operation that occurred was the loading of liquid hydrogen (LH2) during fueling operations of the spacecraft. Due to hydrogen's low explosive limit, any amount leaked could lead to catastrophic event. Hydrogen's chemical properties make it ideal as a rocket fuel; however, the fuel is deemed unsafe for most commercial use because of the inability to easily detect the gas leaking. The increased use of hydrogen over traditional fossil fuels would reduce greenhouse gases and America's dependency on foreign oil. Therefore a technology that would improve safety at NASA and in the commercial sector while creating a new economic sector would have a huge impact to NASA's mission. The Chemochromic Detector for sensing hydrogen gas leakage is a color-changing detector that is useful in any application where it is important to know not only the presence but also the location of the hydrogen gas leak. This technology utilizes a chemochromicpigment and polymer matrix that can be molded or spun into rigid or pliable shapes useable in variable temperature environments including atmospheres of inert gas, hydrogen gas, or mixtures of gases. A change in color of the detector material indicates where gaseous hydrogen leaks are occurring. The irreversible sensor has a dramatic color change from beige to dark grey and remains dark grey after exposure. A reversible pigment changes from white to blue in the presence of hydrogen and reverts back to white in the presence of oxygen. Both versions of the sensor's pigments were comprised of a mixture of a metal oxide substrate and a hydro-chromic compound (i.e., the compound that changed color in the presence of hydrogen) and immediately notified the operator of the presence of low levels of hydrogen. The detector can be used in a variety of formats including paint, tape, caulking, injection molded parts, textiles and fabrics, composites, and films. This technology brings numerous

Hydrogen Research for Spaceport and Space-Based Applications: Hydrogen Sensors and Systems. Part 2

NASA Technical Reports Server (NTRS)

Anderson, Tim; Balaban, Canan

2008-01-01

The activities presented are a broad based approach to advancing key hydrogen related technologies in areas such as fuel cells, hydrogen production, and distributed sensors for hydrogen-leak detection, laser instrumentation for hydrogen-leak detection, and cryogenic transport and storage. Presented are the results from research projects, education and outreach activities, system and trade studies. The work will aid in advancing the state-of-the-art for several critical technologies related to the implementation of a hydrogen infrastructure. Activities conducted are relevant to a number of propulsion and power systems for terrestrial, aeronautics and aerospace applications. Sensor systems research was focused on hydrogen leak detection and smart sensors with adaptive feedback control for fuel cells. The goal was to integrate multifunction smart sensors, low-power high-efficiency wireless circuits, energy harvesting devices, and power management circuits in one module. Activities were focused on testing and demonstrating sensors in a realistic environment while also bringing them closer to production and commercial viability for eventual use in the actual operating environment.

Process for manufacture of thick film hydrogen sensors

DOEpatents

Perdieu, Louisa H.

2000-09-09

A thick film process for producing hydrogen sensors capable of sensing down to a one percent concentration of hydrogen in carrier gasses such as argon, nitrogen, and air. The sensor is also suitable to detect hydrogen gas while immersed in transformer oil. The sensor includes a palladium resistance network thick film printed on a substrate, a portion of which network is coated with a protective hydrogen barrier. The process utilizes a sequence of printing of the requisite materials on a non-conductive substrate with firing temperatures at each step which are less than or equal to the temperature at the previous step.

Overview of the U.S. DOE Hydrogen Safety, Codes and Standards Program. Part 4: Hydrogen Sensors; Preprint

DOE Office of Scientific and Technical Information (OSTI.GOV)

Buttner, William J.; Rivkin, Carl; Burgess, Robert

Hydrogen sensors are recognized as a critical element in the safety design for any hydrogen system. In this role, sensors can perform several important functions including indication of unintended hydrogen releases, activation of mitigation strategies to preclude the development of dangerous situations, activation of alarm systems and communication to first responders, and to initiate system shutdown. The functionality of hydrogen sensors in this capacity is decoupled from the system being monitored, thereby providing an independent safety component that is not affected by the system itself. The importance of hydrogen sensors has been recognized by DOE and by the Fuel Cellmore » Technologies Office's Safety and Codes Standards (SCS) program in particular, which has for several years supported hydrogen safety sensor research and development. The SCS hydrogen sensor programs are currently led by the National Renewable Energy Laboratory, Los Alamos National Laboratory, and Lawrence Livermore National Laboratory. The current SCS sensor program encompasses the full range of issues related to safety sensors, including development of advance sensor platforms with exemplary performance, development of sensor-related code and standards, outreach to stakeholders on the role sensors play in facilitating deployment, technology evaluation, and support on the proper selection and use of sensors.« less

Thin-film fiber optic hydrogen and temperature sensor system

DOEpatents

Nave, Stanley E.

1998-01-01

The invention discloses a sensor probe device for monitoring of hydrogen gas concentrations and temperatures by the same sensor probe. The sensor probe is constructed using thin-film deposition methods for the placement of a multitude of layers of materials sensitive to hydrogen concentrations and temperature on the end of a light transparent lens located within the sensor probe. The end of the lens within the sensor probe contains a lens containing a layer of hydrogen permeable material which excludes other reactive gases, a layer of reflective metal material that forms a metal hydride upon absorbing hydrogen, and a layer of semi-conducting solid that is transparent above a temperature dependent minimum wavelength for temperature detection. The three layers of materials are located at the distal end of the lens located within the sensor probe. The lens focuses light generated by broad-band light generator and connected by fiber-optics to the sensor probe, onto a reflective metal material layer, which passes through the semi-conducting solid layer, onto two optical fibers located at the base of the sensor probe. The reflected light is transmitted over fiberoptic cables to a spectrometer and system controller. The absence of electrical signals and electrical wires in the sensor probe provides for an elimination of the potential for spark sources when monitoring in hydrogen rich environments, and provides a sensor free from electrical interferences.

Thin-film fiber optic hydrogen and temperature sensor system

DOEpatents

Nave, S.E.

1998-07-21

The invention discloses a sensor probe device for monitoring of hydrogen gas concentrations and temperatures by the same sensor probe. The sensor probe is constructed using thin-film deposition methods for the placement of a multitude of layers of materials sensitive to hydrogen concentrations and temperature on the end of a light transparent lens located within the sensor probe. The end of the lens within the sensor probe contains a lens containing a layer of hydrogen permeable material which excludes other reactive gases, a layer of reflective metal material that forms a metal hydride upon absorbing hydrogen, and a layer of semi-conducting solid that is transparent above a temperature dependent minimum wavelength for temperature detection. The three layers of materials are located at the distal end of the lens located within the sensor probe. The lens focuses light generated by broad-band light generator and connected by fiber-optics to the sensor probe, onto a reflective metal material layer, which passes through the semi-conducting solid layer, onto two optical fibers located at the base of the sensor probe. The reflected light is transmitted over fiber optic cables to a spectrometer and system controller. The absence of electrical signals and electrical wires in the sensor probe provides for an elimination of the potential for spark sources when monitoring in hydrogen rich environments, and provides a sensor free from electrical interferences. 3 figs.

Packaging Technology for SiC High Temperature Electronics

NASA Technical Reports Server (NTRS)

Chen, Liang-Yu; Neudeck, Philip G.; Spry, David J.; Meredith, Roger D.; Nakley, Leah M.; Beheim, Glenn M.; Hunter, Gary W.

2017-01-01

High-temperature environment operable sensors and electronics are required for long-term exploration of Venus and distributed control of next generation aeronautical engines. Various silicon carbide (SiC) high temperature sensors, actuators, and electronics have been demonstrated at and above 500 C. A compatible packaging system is essential for long-term testing and application of high temperature electronics and sensors in relevant environments. This talk will discuss a ceramic packaging system developed for high temperature electronics, and related testing results of SiC integrated circuits at 500 C facilitated by this high temperature packaging system, including the most recent progress.

Hydrogen Gas Sensors Based on Semiconductor Oxide Nanostructures

PubMed Central

Gu, Haoshuang; Wang, Zhao; Hu, Yongming

2012-01-01

Recently, the hydrogen gas sensing properties of semiconductor oxide (SMO) nanostructures have been widely investigated. In this article, we provide a comprehensive review of the research progress in the last five years concerning hydrogen gas sensors based on SMO thin film and one-dimensional (1D) nanostructures. The hydrogen sensing mechanism of SMO nanostructures and some critical issues are discussed. Doping, noble metal-decoration, heterojunctions and size reduction have been investigated and proved to be effective methods for improving the sensing performance of SMO thin films and 1D nanostructures. The effect on the hydrogen response of SMO thin films and 1D nanostructures of grain boundary and crystal orientation, as well as the sensor architecture, including electrode size and nanojunctions have also been studied. Finally, we also discuss some challenges for the future applications of SMO nanostructured hydrogen sensors. PMID:22778599

MIS-based sensors with hydrogen selectivity

DOEpatents

Li,; Dongmei, [Boulder, CO; Medlin, J William [Boulder, CO; McDaniel, Anthony H [Livermore, CA; Bastasz, Robert J [Livermore, CA

2008-03-11

The invention provides hydrogen selective metal-insulator-semiconductor sensors which include a layer of hydrogen selective material. The hydrogen selective material can be polyimide layer having a thickness between 200 and 800 nm. Suitable polyimide materials include reaction products of benzophenone tetracarboxylic dianhydride 4,4-oxydianiline m-phenylene diamine and other structurally similar materials.

Flight Hydrogen Sensor for use in the ISS Oxygen Generation Assembly

NASA Technical Reports Server (NTRS)

MSadoques, George, Jr.; Makel, Darby B.

2005-01-01

This paper provides a description of the hydrogen sensor Orbital Replacement Unit (ORU) used on the Oxygen Generation Assembly (OGA), to be operated on the International Space Station (ISS). The hydrogen sensor ORU is being provided by Makel Engineering, Inc. (MEI) to monitor the oxygen outlet for the presence of hydrogen. The hydrogen sensor ORU is a triple redundant design where each sensor converts raw measurements to actual hydrogen partial pressure that is reported to the OGA system controller. The signal outputs are utilized for system shutdown in the event that the hydrogen concentration in the oxygen outlet line exceeds the specified shutdown limit. Improvements have been made to the Micro-Electro-Mechanical Systems (MEMS) based sensing element, screening, and calibration process to meet OGA operating requirements. Two flight hydrogen sensor ORUs have successfully completed the acceptance test phase. This paper also describes the sensor s performance during acceptance testing, additional tests planned to extend the operational performance calibration cycle, and integration with the OGA system.

SiC Technology

NASA Technical Reports Server (NTRS)

Neudeck, Philip G.

1998-01-01

Silicon carbide (SiC)-based semiconductor electronic devices and circuits are presently being developed for use in high-temperature, high-power, and/or high-radiation conditions under which conventional semiconductors cannot adequately perform. Silicon carbide's ability to function under such extreme conditions is expected to enable significant improvements to a far-ranging variety of applications and systems. These range from greatly improved high-voltage switching [1- 4] for energy savings in public electric power distribution and electric motor drives to more powerful microwave electronics for radar and communications [5-7] to sensors and controls for cleaner-burning more fuel-efficient jet aircraft and automobile engines. In the particular area of power devices, theoretical appraisals have indicated that SiC power MOSFET's and diode rectifiers would operate over higher voltage and temperature ranges, have superior switching characteristics, and yet have die sizes nearly 20 times smaller than correspondingly rated silicon-based devices [8]. However, these tremendous theoretical advantages have yet to be realized in experimental SiC devices, primarily due to the fact that SiC's relatively immature crystal growth and device fabrication technologies are not yet sufficiently developed to the degree required for reliable incorporation into most electronic systems [9]. This chapter briefly surveys the SiC semiconductor electronics technology. In particular, the differences (both good and bad) between SiC electronics technology and well-known silicon VLSI technology are highlighted. Projected performance benefits of SiC electronics are highlighted for several large-scale applications. Key crystal growth and device-fabrication issues that presently limit the performance and capability of high temperature and/or high power SiC electronics are identified.

Stretchable hydrogen sensors employing palladium nanosheets transferred onto an elastomeric substrate

NASA Astrophysics Data System (ADS)

Namgung, Gitae; Ta, Qui Thanh Hoai; Noh, Jin-Seo

2018-07-01

Stretchable hydrogen sensors were fabricated from Pd nanosheets that were transferred onto a PDMS substrate. To prepare the Pd nanosheets, a Pd thin film on PDMS was first biaxially stretched and then PDMS substrate was etched off. The size of Pd nanosheets decreased as the applied strain increased and the film thickness decreased. A transfer technique was utilized to implement the stretchable hydrogen sensors. The stretchable sensors exhibited negative response behaviors upon the exposure to hydrogen gas. Interestingly, the sensors worked even under large strains up to 30%, demonstrating a potential as a high-strain-tolerable hydrogen sensor for the first time.

Optical cascaded Fabry-Perot interferometer hydrogen sensor based on vernier effect

NASA Astrophysics Data System (ADS)

Li, Yina; Zhao, Chunliu; Xu, Ben; Wang, Dongning; Yang, Minghong

2018-05-01

An optical cascaded Fabry-Perot interferometer hydrogen sensor based on vernier effect has been proposed and achieved. The proposed sensor, which total length is ∼594 μm, is composed of a segment of large mode area fiber (LMAF) and a segment of hollow-core fiber (HCF). The proposed sensor is coated with the Pt-loaded WO3/SiO2 powder which will result in the increase of local temperature of the sensor head when exposed to hydrogen atmosphere. Thus the hydrogen sensor can be achieved by monitoring the change of resonant envelope wavelength. The hydrogen sensitivity is -1.04 nm/% within the range of 0 % -2.4 % which is greatly improved because of the vernier effect. The response time is ∼80 s. Due to its compact configuration, the proposed sensor provides a feasible and miniature structure to achieve detection of hydrogen.

Editors' Choice—Field Trials Testing of Mixed Potential Electrochemical Hydrogen Safety Sensors at Commercial California Hydrogen Filling Stations

DOE PAGES

Brosha, Eric Lanich; Romero, Christopher Jesse; Poppe, Daniel; ...

2017-10-27

Hydrogen safety sensors must meet specific performance requirements, mandated by the U.S. Department of Energy, for hydrogen fueling station monitoring. Here, we describe the long-term performance of two zirconia-based mixed potential electrochemical hydrogen gas sensors, developed specifically with a high sensitivity to hydrogen, low cross-sensitivity, and fast response time. Over a two-year period, sensors with tin-doped indium oxide and strontium doped lanthanum chromite electrodes were deployed at two stations in four field trials tests conducted in Los Angeles. The sensors documented the existence of hydrogen plumes ranging in concentration from 100 to as high as 2700 ppm in the areamore » surrounding the dispenser, consistent with depressurization from 700 bar following vehicle refueling. As expected, the hydrogen concentration reported by the mixed potential sensors was influenced by wind direction. Baseline stability testing at a Chino, CA station showed no measureable baseline drift throughout 206 days of uninterrupted data acquisition. The high baseline stability, excellent correlation with logged fueling/depressurization events, and absence of false alarms suggest that the zirconia-based mixed potential sensor platform is a good candidate for protecting hydrogen infrastructure where frequent calibrations or sensor replacement to reduce the false alarm frequency have been shown to be cost prohibitive.« less

Editors' Choice—Field Trials Testing of Mixed Potential Electrochemical Hydrogen Safety Sensors at Commercial California Hydrogen Filling Stations

DOE Office of Scientific and Technical Information (OSTI.GOV)

Brosha, Eric Lanich; Romero, Christopher Jesse; Poppe, Daniel

Hydrogen safety sensors must meet specific performance requirements, mandated by the U.S. Department of Energy, for hydrogen fueling station monitoring. Here, we describe the long-term performance of two zirconia-based mixed potential electrochemical hydrogen gas sensors, developed specifically with a high sensitivity to hydrogen, low cross-sensitivity, and fast response time. Over a two-year period, sensors with tin-doped indium oxide and strontium doped lanthanum chromite electrodes were deployed at two stations in four field trials tests conducted in Los Angeles. The sensors documented the existence of hydrogen plumes ranging in concentration from 100 to as high as 2700 ppm in the areamore » surrounding the dispenser, consistent with depressurization from 700 bar following vehicle refueling. As expected, the hydrogen concentration reported by the mixed potential sensors was influenced by wind direction. Baseline stability testing at a Chino, CA station showed no measureable baseline drift throughout 206 days of uninterrupted data acquisition. The high baseline stability, excellent correlation with logged fueling/depressurization events, and absence of false alarms suggest that the zirconia-based mixed potential sensor platform is a good candidate for protecting hydrogen infrastructure where frequent calibrations or sensor replacement to reduce the false alarm frequency have been shown to be cost prohibitive.« less

Fiber optic hydrogen sensors: a review

NASA Astrophysics Data System (ADS)

Yang, Minghong; Dai, Jixiang

2014-12-01

Hydrogen is one of the next generation energies in the future, which shows promising applications in aerospace and chemical industries. Hydrogen leakage monitoring is very dangerous and important because of its low ignition energy, high combustion efficiency, and smallest molecule. This paper reviews the state-of-art development of the fiber optic hydrogen sensing technology. The main developing trends of fiber optic hydrogen sensors are based on two kinds of hydrogen sensitive materials, i.e. palladium-alloy thin films and Pt-doped WO3 coatings. In this review work, the advantages and disadvantages of these two kinds of sensing technologies will be evaluated.

Thin film hydrogen sensor

DOEpatents

Cheng, Y.T.; Poli, A.A.; Meltser, M.A.

1999-03-23

A thin film hydrogen sensor includes a substantially flat ceramic substrate with first and second planar sides and a first substrate end opposite a second substrate end; a thin film temperature responsive resistor on the first planar side of the substrate proximate to the first substrate end; a thin film hydrogen responsive metal resistor on the first planar side of the substrate proximate to the fist substrate end and proximate to the temperature responsive resistor; and a heater on the second planar side of the substrate proximate to the first end. 5 figs.

Thin film hydrogen sensor

DOEpatents

Cheng, Yang-Tse; Poli, Andrea A.; Meltser, Mark Alexander

1999-01-01

A thin film hydrogen sensor, includes: a substantially flat ceramic substrate with first and second planar sides and a first substrate end opposite a second substrate end; a thin film temperature responsive resistor on the first planar side of the substrate proximate to the first substrate end; a thin film hydrogen responsive metal resistor on the first planar side of the substrate proximate to the fist substrate end and proximate to the temperature responsive resistor; and a heater on the second planar side of the substrate proximate to the first end.

Investigation of the applicability of using the triple redundant hydrogen sensor for methane sensing

NASA Technical Reports Server (NTRS)

Lantz, J. B.; Wynveen, R. A.

1983-01-01

Application specifications for the methane sensor were assembled and design guidelines, development goals and evaluation criteria were formulated. This was done to provide a framework to evaluate sensor performance and any design adjustments to the preprototype sensor that could be required to provide methane sensitivity. Good response to hydrogen was experimentally established for four hydrogen sensor elements to be later evaluated for methane response. Prior results were assembled and analyzed for other prototype hydrogen sensor performance parameters to form a comparison base. The four sensor elements previously shown to have good hydrogen response were experimentally evaluated for methane response in 2.5% methane-in-air. No response was obtained for any of the elements, despite the high methane concentration used (50% of the Lower Flammability Limit). It was concluded that the preprototype sensing elements were insensitive to methane and were hydrogen specific. Alternative sensor operating conditions and hardware design changes were considered to provide methane sensitivity to the preprototype sensor, including a variety of different methane sensing techniques. Minor changes to the existing sensor elements, sensor geometry and operating conditions will not make the preprototype hydrogen sensor respond to methane. New sensor elements that will provide methane and hydrogen sensitivity require replacement of the existing thermistor type elements. Some hydrogen sensing characteristics of the modified sensor will be compromised (larger in situ calibration gas volume and H2 nonspecificity). The preprototype hydrogen sensor should be retained for hydrogen monitoring and a separate methane sensor should be developed.

Hydrogen sensors based on catalytic metals

NASA Astrophysics Data System (ADS)

Beklemyshev, V. I.; Berezine, V.; Bykov, Victor A.; Kiselev, L.; Makhonin, I.; Pevgov, V.; Pustovoy, V.; Semynov, A.; Sencov, Y.; Shkuropat, I.; Shokin, A.

1999-11-01

On the base of microelectronical and micromechanical technology were designed and developed converters of hydrogen concentration to electrical signals. The devices of controlling concentration of hydrogen in the air were developed. These devices were applied for ensuring fire and explosion security of complex technological teste of missile oxygen-hydrogen engine, developed for cryogenic accelerations block. The sensor block of such device was installed directly on the armor-plate, to which was attached tested engine.

Hydrogen Leak Detection Sensor Database

NASA Technical Reports Server (NTRS)

Baker, Barton D.

2010-01-01

This slide presentation reviews the characteristics of the Hydrogen Sensor database. The database is the result of NASA's continuing interest in and improvement of its ability to detect and assess gas leaks in space applications. The database specifics and a snapshot of an entry in the database are reviewed. Attempts were made to determine the applicability of each of the 65 sensors for ground and/or vehicle use.

Downhole geothermal well sensors comprising a hydrogen-resistant optical fiber

DOEpatents

Weiss, Jonathan D.

2005-02-08

A new class of optical fiber based thermal sensors has been invented. The new sensors comprise hydrogen-resistant optical fibers which are able to withstand a hot, hydrogen-containing environment as is often found in the downhole well environment.

The development of a solid-state hydrogen sensor for rocket engine leakage detection

NASA Technical Reports Server (NTRS)

Liu, Chung-Chiun

1994-01-01

Hydrogen propellant leakage poses significant operational problems in the rocket propulsion industry as well as for space exploratory applications. Vigorous efforts have been devoted to minimizing hydrogen leakage in assembly, test, and launch operations related to hydrogen propellant. The objective has been to reduce the operational cost of assembling and maintaining hydrogen delivery systems. Specifically, efforts have been made to develop a hydrogen leak detection system for point-contact measurement. Under the auspices of Lewis Research Center, the Electronics Design Center at Case Western Reserve University, Cleveland, Ohio, has undertaken the development of a point-contact hydrogen gas sensor with potential applications to the hydrogen propellant industry. We envision a sensor array consisting of numbers of discrete hydrogen sensors that can be located in potential leak sites. Silicon-based microfabrication and micromachining techniques are used in the fabrication of these sensor prototypes. Evaluations of the sensor are carried out in-house at Case Western Reserve University as well as at Lewis Research Center and GenCorp Aerojet, Sacramento, California. The hydrogen gas sensor is not only applicable in a hydrogen propulsion system, but also usable in many other civilian and industrial settings. This includes vehicles or facility use, or in the production of hydrogen gas. Dual space and commercial uses of these point-contacted hydrogen sensors are feasible and will directly meet the needs and objectives of NASA as well as various industrial segments.

The development of a solid-state hydrogen sensor for rocket engine leakage detection

NASA Astrophysics Data System (ADS)

Liu, Chung-Chiun

Hydrogen propellant leakage poses significant operational problems in the rocket propulsion industry as well as for space exploratory applications. Vigorous efforts have been devoted to minimizing hydrogen leakage in assembly, test, and launch operations related to hydrogen propellant. The objective has been to reduce the operational cost of assembling and maintaining hydrogen delivery systems. Specifically, efforts have been made to develop a hydrogen leak detection system for point-contact measurement. Under the auspices of Lewis Research Center, the Electronics Design Center at Case Western Reserve University, Cleveland, Ohio, has undertaken the development of a point-contact hydrogen gas sensor with potential applications to the hydrogen propellant industry. We envision a sensor array consisting of numbers of discrete hydrogen sensors that can be located in potential leak sites. Silicon-based microfabrication and micromachining techniques are used in the fabrication of these sensor prototypes. Evaluations of the sensor are carried out in-house at Case Western Reserve University as well as at Lewis Research Center and GenCorp Aerojet, Sacramento, California. The hydrogen gas sensor is not only applicable in a hydrogen propulsion system, but also usable in many other civilian and industrial settings. This includes vehicles or facility use, or in the production of hydrogen gas. Dual space and commercial uses of these point-contacted hydrogen sensors are feasible and will directly meet the needs and objectives of NASA as well as various industrial segments.

Hydrogen and oxygen sensor development

NASA Technical Reports Server (NTRS)

Farber, E. A.; Mahig, J.; Schaeper, H. R. A.

1972-01-01

A reliable and low cost gas sensor was investigated for instantaneously detecting H2 in N2, H2 in air, and O2 in N2. The major portion of the research was spent in developing a sensor which would instantaneously detect H2 to + or - 50 ppm even in the presence of trace amounts of other gases. The experimental procedures used to provide the performance characteristics for the various oscillators are discussed describing the equipment with help of schematics and photographs where applicable. The resulting performance is given in graphical form. In some cases both hydrogen and helium may be present and since both of them effect gas sensors similarly, a method was found to determine the concentration of each. The methods developed are grouped into the following four broad categories: pure metal response, variation in heat conductivity, reduction methods, and exotic processes. From the above it was decided for the present to use a copper oxide reduction process as this process was demonstrated to be capable of determining the concentrations of hydrogen and helium respectively in a gas mixture with air or nitrogen.

Selectivity and resistance to poisons of commercial hydrogen sensors

DOE PAGES

Palmisano, V.; Weidner, E.; Boon-Brett, L.; ...

2015-03-20

The resistance of several models of catalytic, workfunction-based metal-oxide-semiconductor and electrochemical hydrogen sensors to chemical contaminants such as SO 2, H 2S, NO 2 and hexamethyldisiloxane (HMDS) has been investigated. These sensor platforms are among the most commonly used for the detection of hydrogen. The evaluation protocols were based on the methods recommended in the ISO 26142:2010 standard. Permanent alteration of the sensor response to the target analyte (H 2) following exposure to potential poisons at the concentrations specified in ISO 26142 was rarely observed. Although a shift in the baseline response was often observed during exposure to the potentialmore » poisons, only in a few cases did this shift persist after removal of the contaminants. Overall, the resistance of the sensors to poisoning was good. However, a change in sensitivity to hydrogen was observed in the electrochemical platform after exposure to NO 2 and for a catalytic sensor during exposure to SO 2. The siloxane resistance test prescribed in ISO 26142, based on exposure to 10 ppm HMDS, may possibly not properly reflect sensor robustness to siloxanes. In conclusion, further evaluation of the resistance of sensors to other Si-based contaminants and other exposure profiles (e.g., concentration, exposure times) is needed.« less

The Development of Silicon Carbide Based Hydrogen and Hydrocarbon Sensors

NASA Technical Reports Server (NTRS)

Liu, Chung-Chiun

1994-01-01

Silicon carbide is a high temperature electronic material. Its potential for development of chemical sensors in a high temperature environment has not been explored. The objective of this study is to use silicon carbide as the substrate material for the construction of chemical sensors for high temperature applications. Sensors for the detection of hydrogen and hydrocarbon are developed in this program under the auspices of Lewis Research Center, NASA. Metal-semiconductor or metal-insulator-semiconductor structures are used in this development. Specifically, using palladium-silicon carbide Schottky diodes as gas sensors in the temperature range of 100 to 400 C are designed, fabricated and assessed. The effect of heat treatment on the Pd-SiC Schottky diode is examined. Operation of the sensors at 400 C demonstrate sensitivity of the sensor to hydrogen and hydrocarbons. Substantial progress has been made in this study and we believe that the Pd-SiC Schottky diode has potential as a hydrogen and hydrocarbon sensor over a wide range of temperatures. However, the long term stability and operational life of the sensor need to be assessed. This aspect is an important part of our future continuing investigation.

Porous palladium coated conducting polymer nanoparticles for ultrasensitive hydrogen sensors

NASA Astrophysics Data System (ADS)

Lee, Jun Seop; Kim, Sung Gun; Cho, Sunghun; Jang, Jyongsik

2015-12-01

Hydrogen, a clean-burning fuel, is of key importance to various industrial applications, including fuel cells and in the aerospace and automotive industries. However, hydrogen gas is odorless, colorless, and highly flammable; thus appropriate safety protocol implementation and monitoring are essential. Highly sensitive hydrogen leak detection and surveillance sensor systems are needed; additionally, the ability to maintain uniformity through repetitive hydrogen sensing is becoming increasingly important. In this report, we detail the fabrication of porous palladium coated conducting polymer (3-carboxylate polypyrrole) nanoparticles (Pd@CPPys) to detect hydrogen gas. The Pd@CPPys are produced by means of facile alkyl functionalization and chemical reduction of a pristine 3-carboxylate polypyrrole nanoparticle-contained palladium precursor (PdCl2) solution. The resulting Pd@CPPy-based sensor electrode exhibits ultrahigh sensitivity (0.1 ppm) and stability toward hydrogen gas at room temperature due to the palladium sensing layer.Hydrogen, a clean-burning fuel, is of key importance to various industrial applications, including fuel cells and in the aerospace and automotive industries. However, hydrogen gas is odorless, colorless, and highly flammable; thus appropriate safety protocol implementation and monitoring are essential. Highly sensitive hydrogen leak detection and surveillance sensor systems are needed; additionally, the ability to maintain uniformity through repetitive hydrogen sensing is becoming increasingly important. In this report, we detail the fabrication of porous palladium coated conducting polymer (3-carboxylate polypyrrole) nanoparticles (Pd@CPPys) to detect hydrogen gas. The Pd@CPPys are produced by means of facile alkyl functionalization and chemical reduction of a pristine 3-carboxylate polypyrrole nanoparticle-contained palladium precursor (PdCl2) solution. The resulting Pd@CPPy-based sensor electrode exhibits ultrahigh sensitivity (0.1 ppm

A finite element model of a MEMS-based surface acoustic wave hydrogen sensor.

PubMed

El Gowini, Mohamed M; Moussa, Walied A

2010-01-01

Hydrogen plays a significant role in various industrial applications, but careful handling and continuous monitoring are crucial since it is explosive when mixed with air. Surface Acoustic Wave (SAW) sensors provide desirable characteristics for hydrogen detection due to their small size, low fabrication cost, ease of integration and high sensitivity. In this paper a finite element model of a Surface Acoustic Wave sensor is developed using ANSYS12© and tested for hydrogen detection. The sensor consists of a YZ-lithium niobate substrate with interdigital electrodes (IDT) patterned on the surface. A thin palladium (Pd) film is added on the surface of the sensor due to its high affinity for hydrogen. With increased hydrogen absorption the palladium hydride structure undergoes a phase change due to the formation of the β-phase, which deteriorates the crystal structure. Therefore with increasing hydrogen concentration the stiffness and the density are significantly reduced. The values of the modulus of elasticity and the density at different hydrogen concentrations in palladium are utilized in the finite element model to determine the corresponding SAW sensor response. Results indicate that with increasing the hydrogen concentration the wave velocity decreases and the attenuation of the wave is reduced.

Harsh Environment Silicon Carbide Sensor Technology for Geothermal Instrumentation

DOE Office of Scientific and Technical Information (OSTI.GOV)

Pisano, Albert P.

2013-04-26

This project utilizes Silicon Carbide (SiC) materials platform to fabricate advanced sensors to be used as high-temperature downhole instrumentation for the DOE’s Geothermal Technologies Program on Enhanced Geothermal Systems. The scope of the proposed research is to 1) develop a SiC pressure sensor that can operate in harsh supercritical conditions, 2) develop a SiC temperature sensor that can operate in harsh supercritical conditions, 3) develop a bonding process for adhering SiC sensor die to well casing couplers, and 4) perform experimental exposure testing of sensor materials and the sensor devices.

Silicon Carbide Gas Sensors for Propulsion Emissions and Safety Applications

NASA Technical Reports Server (NTRS)

Hunter, G. W.; Xu, J.; Neudeck, P. G.; Lukco, D.; Trunek, A.; Spry, D.; Lampard, P.; Androjna, D.; Makel, D.; Ward, B.

2007-01-01

Silicon carbide (SiC) based gas sensors have the ability to meet the needs of a range of aerospace propulsion applications including emissions monitoring, leak detection, and hydrazine monitoring. These applications often require sensitive gas detection in a range of environments. An effective sensing approach to meet the needs of these applications is a Schottky diode based on a SiC semiconductor. The primary advantage of using SiC as a semiconductor is its inherent stability and capability to operate at a wide range of temperatures. The complete SiC Schottky diode gas sensing structure includes both the SiC semiconductor and gas sensitive thin film metal layers; reliable operation of the SiC-based gas sensing structure requires good control of the interface between these gas sensitive layers and the SiC. This paper reports on the development of SiC gas sensors. The focus is on two efforts to better control the SiC gas sensitive Schottky diode interface. First, the use of palladium oxide (PdOx) as a barrier layer between the metal and SiC is discussed. Second, the use of atomically flat SiC to provide an improved SiC semiconductor surface for gas sensor element deposition is explored. The use of SiC gas sensors in a multi-parameter detection system is briefly discussed. It is concluded that SiC gas sensors have potential in a range of propulsion system applications, but tailoring of the sensor for each application is necessary.

Measured Attenuation of Coplanar Waveguide on 6H, p-type SiC and High Purity Semi-Insulating 4H SiC through 800 K

NASA Technical Reports Server (NTRS)

Ponchak, George E.; Schwartz, Zachary D.; Alterovitz, Samuel A.; Downey, Alan N.

2004-01-01

Wireless sensors for high temperature applications such as oil drilling and mining, automobiles, and jet engine performance monitoring require circuits built on wide bandgap semiconductors. In this paper, the characteristics of microwave transmission lines on 4H-High Purity Semi-Insulating SiC and 6H, p-type SiC is presented as a function of temperature and frequency. It is shown that the attenuation of 6H, p-type substrates is too high for microwave circuits, large leakage current will flow through the substrate, and that unusual attenuation characteristics are due to trapping in the SiC. The 4H-HPSI SiC is shown to have low attenuation and leakage currents over the entire temperature range.

Wireless Hydrogen Smart Sensor Based on Pt/Graphene-Immobilized Radio-Frequency Identification Tag.

PubMed

Lee, Jun Seop; Oh, Jungkyun; Jun, Jaemoon; Jang, Jyongsik

2015-08-25

Hydrogen, a clean-burning fuel, is of key importance to various industrial applications, including fuel cells and the aerospace and automotive industries. However, hydrogen gas is odorless, colorless, and highly flammable; thus, appropriate safety protocol implementation and monitoring are essential. Highly sensitive hydrogen-gas leak detection and surveillance systems are needed; additionally, the ability to monitor large areas (e.g., cities) via wireless networks is becoming increasingly important. In this report, we introduce a radio frequency identification (RFID)-based wireless smart-sensor system, composed of a Pt-decorated reduced graphene oxide (Pt_rGO)-immobilized RFID sensor tag and an RFID-reader antenna-connected network analyzer to detect hydrogen gas. The Pt_rGOs, produced using a simple chemical reduction process, were immobilized on an antenna pattern in the sensor tag through spin coating. The resulting Pt_rGO-based RFID sensor tag exhibited a high sensitivity to hydrogen gas at unprecedentedly low concentrations (1 ppm), with wireless communication between the sensor tag and RFID-reader antenna. The wireless sensor tag demonstrated flexibility and a long lifetime due to the strong immobilization of Pt_rGOs on the substrate and battery-independent operation during hydrogen sensing, respectively.

Nanocrystalline SiC film thermistors for cryogenic applications

NASA Astrophysics Data System (ADS)

Mitin, V. F.; Kholevchuk, V. V.; Semenov, A. V.; Kozlovskii, A. A.; Boltovets, N. S.; Krivutsa, V. A.; Slepova, A. S.; Novitskii, S. V.

2018-02-01

We developed a heat-sensitive material based on nanocrystalline SiC films obtained by direct deposition of carbon and silicon ions onto sapphire substrates. These SiC films can be used for resistance thermometers operating in the 2 K-300 K temperature range. Having high heat sensitivity, they are relatively low sensitive to the magnetic field. The designs of the sensors are presented together with a discussion of their thermometric characteristics and sensitivity to magnetic fields.

Metal-Free Cataluminescence Gas Sensor for Hydrogen Sulfide Based on Its Catalytic Oxidation on Silicon Carbide Nanocages.

PubMed

Wu, Liqian; Zhang, Lichun; Sun, Mingxia; Liu, Rui; Yu, Lingzhu; Lv, Yi

2017-12-19

Cataluminescence- (CTL-) based sensors are among the most attractive and effective tools for gas sensing, owing to their efficient selectivity, high sensitivity, and rapidity. As the sensing materials of CTL-based sensors, metal-based catalysts easily bring about high costs and environmental pollution of heavy metals. More importantly, the long-term stability of metal-based catalysts is usually rather poor. Metal-free catalysts have unique advantages such as environmental friendliness, low costs, and long-term stability, making them promising materials for CTL-based sensors. Herein, we report the fabrication of a CTL sensor based on a metal-free catalyst. F-doped cage-like SiC was synthesized by wet chemical etching. The as-prepared products showed a rapid, stable, highly selective, and sensitive cataluminescent response to H 2 S. The stability of the sensor was demonstrated to be fairly good for at least 15 days. After CTL tests, F-doped cage-like SiC retained its original morphology, structure, and chemical composition. In addition, to the best of our knowledge, this is the first report of a metal-free CTL sensor. Metal-free catalysts are environmentally friendly and low in cost and exhibit long-term stability, which could open a new avenue of CTL sensing.

Micro-machined thin film hydrogen gas sensor, and method of making and using the same

NASA Technical Reports Server (NTRS)

DiMeo, Jr., Frank (Inventor); Bhandari, Gautam (Inventor)

2001-01-01

A hydrogen sensor including a thin film sensor element formed, e.g., by metalorganic chemical vapor deposition (MOCVD) or physical vapor deposition (PVD), on a microhotplate structure. The thin film sensor element includes a film of a hydrogen-interactive metal film that reversibly interacts with hydrogen to provide a correspondingly altered response characteristic, such as optical transmissivity, electrical conductance, electrical resistance, electrical capacitance, magnetoresistance, photoconductivity, etc., relative to the response characteristic of the film in the absence of hydrogen. The hydrogen-interactive metal film may be overcoated with a thin film hydrogen-permeable barrier layer to protect the hydrogen-interactive film from deleterious interaction with non-hydrogen species. The hydrogen sensor of the invention may be usefully employed for the detection of hydrogen in an environment susceptible to the incursion or generation of hydrogen and may be conveniently configured as a hand-held apparatus.

Flashback Detection Sensor for Hydrogen Augmented Natural Gas Combustion

DOE Office of Scientific and Technical Information (OSTI.GOV)

Thornton, J.D.; Chorpening, B.T.; Sidwell, T.

2007-05-01

The use of hydrogen augmented fuel is being investigated by various researchers as a method to extend the lean operating limit, and potentially reduce thermal NOx formation in natural gas fired lean premixed (LPM) combustion systems. The resulting increase in flame speed during hydrogen augmentation, however, increases the propensity for flashback in LPM systems. Real-time in-situ monitoring of flashback is important for the development of control strategies for use of hydrogen augmented fuel in state-of-the-art combustion systems, and for the development of advanced hydrogen combustion systems. The National Energy Technology Laboratory (NETL) and Woodward Industrial Controls are developing a combustionmore » control and diagnostics sensor (CCADS), which has already been demonstrated as a useful sensor for in-situ monitoring of natural gas combustion, including detection of important combustion events such as flashback and lean blowoff. Since CCADS is a flame ionization sensor technique, the low ion concentration produced in pure hydrogen combustion raises concerns of whether CCADS can be used to monitor flashback in hydrogen augmented combustion. This paper discusses CCADS tests conducted at 0.2-0.6 MPa (2-6 atm), demonstrating flashback detection with fuel compositions up to 80% hydrogen (by volume) mixed with natural gas. NETL’s Simulation Validation (SimVal) combustor offers full optical access to pressurized combustion during these tests. The CCADS data and high-speed video show the reaction zone moves upstream into the nozzle as the hydrogen fuel concentration increases, as is expected with the increased flame speed of the mixture. The CCADS data and video also demonstrate the opportunity for using CCADS to provide the necessary in-situ monitor to control flashback and lean blowoff in hydrogen augmented combustion applications.« less

Fully-reversible optical sensor for hydrogen peroxide with fast response.

PubMed

Ding, Longjiang; Chen, Siyu; Zhang, Wei; Zhang, Yinglu; Wang, Xu-Dong

2018-05-09

A fully reversible optical sensor for hydrogen peroxide with fast response is presented. The sensor was fabricated by in-situ growing ultra-small platinum nanoparticles (PtNPs) inside the pores of fibrous silica particles (KCC-1). The nanocomposite was then embedded into a hydrogel matrix and form a sensor layer, the immobilized PtNPs can catalytically convert hydrogen peroxide into molecular oxygen, which is measured via luminescent quenching based oxygen sensor underneath. Owing to the high porosity and permeability of KCC-1 and high local concentration of PtNPs, the sensor exhibits fast response (less than 1 min) and full reversibility. The measurement range of the sensor covers 1.0 μM to 10.0 mM, and very small amount of sample is required during measurement (200 μL). Because of its high stability, excellent reversibility and selectivity, and extremely fast response, the sensor could fulfill all industry requirements for real-time measurement, and fill market vacancy.

Application of polymer-coated metal-insulator-semiconductor sensors for the detection of dissolved hydrogen

NASA Astrophysics Data System (ADS)

Li, Dongmei; Medlin, J. W.; Bastasz, R.

2006-06-01

The detection of dissolved hydrogen in liquids is crucial to many industrial applications, such as fault detection for oil-filled electrical equipment. To enhance the performance of metal-insulator-semiconductor (MIS) sensors for dissolved hydrogen detection, a palladium MIS sensor has been modified by depositing a polyimide (PI) layer above the palladium surface. Response measurements of the PI-coated sensors in mineral oil indicate that hydrogen is sensitively detected, while the effect of interfering gases on sensor response is minimized.

New Gas Polarographic Hydrogen Sensor

NASA Technical Reports Server (NTRS)

Dominguez, Jesus A.; Barile, Ron

2004-01-01

Polarography is the measurement of the current that flows in solution as a function of an applied voltage. The actual form of the observed polarographic current depends upon the manner in which the voltage is applied and on the characteristics of the working electrode. The new gas polarographic H2 sensor shows a current level increment with concentration of the gaseous H2 similar to those relating to metal ions in liquid electrolytes in well-known polarography. This phenomenon is caused by the fact that the diffusion of the gaseous H2 through a gas diffusion hole built in the sensor is a rate-determining step in the gaseous-hydrogen sensing mechanism. The diffusion hole artificially limits the diffusion of the gaseous H2 toward the electrode located at the sensor cavity. This gas polarographic H2 sensor. is actually an electrochemical-pumping cell since the gaseous H2 is in fact pumped via the electrochemical driving force generated between the electrodes. Gaseous H2 enters the diffusion hole and reaches the first electrode (anode) located in the sensor cavity to be transformed into an H+ ions or protons; H+ ions pass through the electrolyte and reach the second electrode (cathode) to be reformed to gaseous H2. Gas polarographic 02 sensors are commercially available; a gas polarographic 02 sensor was used to prove the feasibility of building a new gas polarographic H2 sensor.

Integrated multi-channel nano-engineered optical hydrogen and temperature sensor detection systems for launch vehicles

NASA Astrophysics Data System (ADS)

Alam, M. Z.; Moreno, J.; Aitchison, J. S.; Mojahedi, M.; Kazemi, A. A.

2008-08-01

Launch vehicles and other satellite users need launch services that are highly reliable, less complex, easier to test, and cost effective. Being a very small molecule, hydrogen is prone to leakage through seals and micro-cracks. Hydrogen detection in space application is very challenging; public acceptance of hydrogen fuel would require the integration of a reliable hydrogen safety sensor. For detecting leakage of cryogenic fluids in spaceport facilities, launch vehicle industry and aerospace agencies are currently relying heavily on the bulky mass spectrometers, which fill one or more equipment racks, and weigh several hundred kilograms. Therefore, there is a critical need for miniaturized sensors and instruments suitable for use in space applications. This paper describes a novel multi-channel integrated nano-engineered optical sensor to detect hydrogen and monitor the temperature. The integrated optic sensor is made of multi-channel waveguide elements that measure hydrogen concentration in real Time. Our sensor is based on the use of a high index waveguide with a Ni/Pd overlay to detect hydrogen. When hydrogen is absorbed into the Ni/Pd alloy there is a change in the absorption of the material and the optical signal in the waveguide is increased. Our design uses a thin alloy (few nanometers thick) overlay which facilitates the absorption of the hydrogen and will result in a response time of approximately few seconds. Like other Pd/Pd-Ni based sensors the device response varies with temperature and hence the effects of temperature variations must be taken into account. One solution to this problem is simultaneous measurement of temperature in addition to hydrogen concentration at the same vicinity. Our approach here is to propose a temperature sensor that can easily be integrated on the same platform as the hydrogen sensor reported earlier by our group. One suitable choice of material system is silicon on insulator (SOI). Here, we propose a micro ring resonators

Improved fuel-cell-type hydrogen sensor

NASA Technical Reports Server (NTRS)

Rudek, F. P.; Rutkowski, M. D.

1968-01-01

Modified hydrogen sensor replaces oxygen cathode with a cathode consisting of a sealed paste of gold hydroxide and a pure gold current collector. The net reaction which occurs during cell operation is the reduction of the gold hydroxide to gold and water, with a half-cell potential of 1.4 volts.

Advanced Packaging Technology Used in Fabricating a High-Temperature Silicon Carbide Pressure Sensor

NASA Technical Reports Server (NTRS)

Beheim, Glenn M.

2003-01-01

The development of new aircraft engines requires the measurement of pressures in hot areas such as the combustor and the final stages of the compressor. The needs of the aircraft engine industry are not fully met by commercially available high-temperature pressure sensors, which are fabricated using silicon. Kulite Semiconductor Products and the NASA Glenn Research Center have been working together to develop silicon carbide (SiC) pressure sensors for use at high temperatures. At temperatures above 850 F, silicon begins to lose its nearly ideal elastic properties, so the output of a silicon pressure sensor will drift. SiC, however, maintains its nearly ideal mechanical properties to extremely high temperatures. Given a suitable sensor material, a key to the development of a practical high-temperature pressure sensor is the package. A SiC pressure sensor capable of operating at 930 F was fabricated using a newly developed package. The durability of this sensor was demonstrated in an on-engine test. The SiC pressure sensor uses a SiC diaphragm, which is fabricated using deep reactive ion etching. SiC strain gauges on the surface of the diaphragm sense the pressure difference across the diaphragm. Conventionally, the SiC chip is mounted to the package with the strain gauges outward, which exposes the sensitive metal contacts on the chip to the hostile measurement environment. In the new Kulite leadless package, the SiC chip is flipped over so that the metal contacts are protected from oxidation by a hermetic seal around the perimeter of the chip. In the leadless package, a conductive glass provides the electrical connection between the pins of the package and the chip, which eliminates the fragile gold wires used previously. The durability of the leadless SiC pressure sensor was demonstrated when two 930 F sensors were tested in the combustor of a Pratt & Whitney PW4000 series engine. Since the gas temperatures in these locations reach 1200 to 1300 F, the sensors were

High-performance flexible hydrogen sensor made of WS2 nanosheet-Pd nanoparticle composite film

NASA Astrophysics Data System (ADS)

Kuru, Cihan; Choi, Duyoung; Kargar, Alireza; Liu, Chin Hung; Yavuz, Serdar; Choi, Chulmin; Jin, Sungho; Bandaru, Prabhakar R.

2016-05-01

We report a flexible hydrogen sensor, composed of WS2 nanosheet-Pd nanoparticle composite film, fabricated on a flexible polyimide substrate. The sensor offers the advantages of light-weight, mechanical durability, room temperature operation, and high sensitivity. The WS2-Pd composite film exhibits sensitivity (R 1/R 2, the ratio of the initial resistance to final resistance of the sensor) of 7.8 to 50 000 ppm hydrogen. Moreover, the WS2-Pd composite film distinctly outperforms the graphene-Pd composite, whose sensitivity is only 1.14. Furthermore, the ease of fabrication holds great potential for scalable and low-cost manufacturing of hydrogen sensors.

Ultraviolet Light-Assisted Copper Oxide Nanowires Hydrogen Gas Sensor

NASA Astrophysics Data System (ADS)

Sihar, Nabihah; Tiong, Teck Yaw; Dee, Chang Fu; Ooi, Poh Choon; Hamzah, Azrul Azlan; Mohamed, Mohd Ambri; Majlis, Burhanuddin Yeop

2018-05-01

We fabricated copper oxide nanowires (CuO NWs) ultraviolet (UV) light-assisted hydrogen gas sensor. The fabricated sensor shows promising sensor response behavior towards 100 ppm of H2 at room temperature and elevated temperature at 100 °C when exposed to UV light (3.0 mW/cm2). One hundred-cycle device stability test has been performed, and it is found that for sample elevated at 100 °C, the UV-activated sample achieved stability in the first cycle as compared to the sample without UV irradiation which needed about 10 cycles to achieve stability at the initial stage, whereas the sample tested at room temperature was able to stabilize with the aid of UV irradiation. This indicates that with the aid of UV light, after some "warming up" time, it is possible for the conventional CuO NW sensor which normally work at elevated temperature to function at room temperature because UV source is speculated to play a dominant role to increase the interaction of the surface of CuO NWs and hydrogen gas molecules absorbed after the light exposure.

Wafer-scale epitaxial graphene on SiC for sensing applications

NASA Astrophysics Data System (ADS)

Karlsson, Mikael; Wang, Qin; Zhao, Yichen; Zhao, Wei; Toprak, Muhammet S.; Iakimov, Tihomir; Ali, Amer; Yakimova, Rositza; Syväjärvi, Mikael; Ivanov, Ivan G.

2015-12-01

The epitaxial graphene-on-silicon carbide (SiC-G) has advantages of high quality and large area coverage owing to a natural interface between graphene and SiC substrate with dimension up to 100 mm. It enables cost effective and reliable solutions for bridging the graphene-based sensors/devices from lab to industrial applications and commercialization. In this work, the structural, optical and electrical properties of wafer-scale graphene grown on 2'' 4H semi-insulating (SI) SiC utilizing sublimation process were systemically investigated with focus on evaluation of the graphene's uniformity across the wafer. As proof of concept, two types of glucose sensors based on SiC-G/Nafion/Glucose-oxidase (GOx) and SiC-G/Nafion/Chitosan/GOx were fabricated and their electrochemical properties were characterized by cyclic voltammetry (CV) measurements. In addition, a few similar glucose sensors based on graphene by chemical synthesis using modified Hummer's method were also fabricated for comparison.

Freeze drying-assisted synthesis of Pt@reduced graphene oxide nanocomposites as excellent hydrogen sensor

NASA Astrophysics Data System (ADS)

Lu, Xiaojing; Song, Xinjie; Gu, Cuiping; Ren, Haibo; Sun, Yufeng; Huang, Jiarui

2018-05-01

Quick and efficient detection of low concentrations of hydrogen remains a challenge because of the stability of hydrogen. A sensor based on reduced oxide graphene functionalized with Pt nanoparticles is successfully fabricated using a freeze-drying method followed by heat treatment. The structure and morphology of the Pt@rGO nanocomposites are well analyzed by X-ray diffraction, field emission scanning electron microscopy, transmission electron microscopy, Raman spectroscopy, and X-ray photoelectron spectroscopy. The as-prepared Pt@rGO nanocomposites show excellent hydrogen gas sensing properties at a low working temperature of 50 °C. The sensitivity toward 0.5% hydrogen is 8%. The response and recovery times of the sensor exposed to 0.5% hydrogen are 63 and 104 s, respectively. The gas-sensing mechanism of Pt@rGO sensor is also discussed.

Efficient room temperature hydrogen sensor based on UV-activated ZnO nano-network

NASA Astrophysics Data System (ADS)

Kumar, Mohit; Kumar, Rahul; Rajamani, Saravanan; Ranwa, Sapana; Fanetti, Mattia; Valant, Matjaz; Kumar, Mahesh

2017-09-01

Room temperature hydrogen sensors were fabricated from Au embedded ZnO nano-networks using a 30 mW GaN ultraviolet LED. The Au-decorated ZnO nano-networks were deposited on a SiO2/Si substrate by a chemical vapour deposition process. X-ray diffraction (XRD) spectrum analysis revealed a hexagonal wurtzite structure of ZnO and presence of Au. The ZnO nanoparticles were interconnected, forming nano-network structures. Au nanoparticles were uniformly distributed on ZnO surfaces, as confirmed by FESEM imaging. Interdigitated electrodes (IDEs) were fabricated on the ZnO nano-networks using optical lithography. Sensor performances were measured with and without UV illumination, at room temperate, with concentrations of hydrogen varying from 5 ppm to 1%. The sensor response was found to be ˜21.5% under UV illumination and 0% without UV at room temperature for low hydrogen concentration of 5 ppm. The UV-photoactivated mode enhanced the adsorption of photo-induced O- and O2- ions, and the d-band electron transition from the Au nanoparticles to ZnO—which increased the chemisorbed reaction between hydrogen and oxygen. The sensor response was also measured at 150 °C (without UV illumination) and found to be ˜18% at 5 ppm. Energy efficient low cost hydrogen sensors can be designed and fabricated with the combination of GaN UV LEDs and ZnO nanostructures.

Pd/Ag coated fiber Bragg grating sensor for hydrogen monitoring in power transformers.

PubMed

Ma, G M; Jiang, J; Li, C R; Song, H T; Luo, Y T; Wang, H B

2015-04-01

Compared with conventional DGA (dissolved gas analysis) method for on-line monitoring of power transformers, FBG (fiber Bragg grating) hydrogen sensor represents marked advantages over immunity to electromagnetic field, time-saving, and convenience to defect location. Thus, a novel FBG hydrogen sensor based on Pd/Ag (Palladium/Silver) along with polyimide composite film to measure dissolved hydrogen concentration in large power transformers is proposed in this article. With the help of Pd/Ag composite coating, the enhanced performance on mechanical strength and sensitivity is demonstrated, moreover, the response time and sensitivity influenced by oil temperature are solved by correction lines. Sensitivity measurement and temperature calibration of the specific hydrogen sensor have been done respectively in the lab. And experiment results show a high sensitivity of 0.055 pm/(μl/l) with instant response time about 0.4 h under the typical operating temperature of power transformers, which proves a potential utilization inside power transformers to monitor the health status by detecting the dissolved hydrogen concentration.

Catalytic-Metal/PdO(sub x)/SiC Schottky-Diode Gas Sensors

NASA Technical Reports Server (NTRS)

Hunter, Gary W.; Xu, Jennifer C.; Lukco, Dorothy

2006-01-01

Miniaturized hydrogen- and hydrocarbon-gas sensors, heretofore often consisting of Schottky diodes based on catalytic metal in contact with SiC, can be improved by incorporating palladium oxide (PdOx, where 0 less than or equal to x less than or equal to 1) between the catalytic metal and the SiC. In prior such sensors in which the catalytic metal was the alloy PdCr, diffusion and the consequent formation of oxides and silicides of Pd and Cr during operation at high temperature were observed to cause loss of sensitivity. However, it was also observed that any PdOx layers that formed and remained at PdCr/SiC interfaces acted as barriers to diffusion, preventing further deterioration by preventing the subsequent formation of metal silicides. In the present improvement, the lesson learned from these observations is applied by placing PdOx at the catalytic metal/SiC interfaces in a controlled and uniform manner to form stable diffusion barriers that prevent formation of metal silicides. A major advantage of PdOx over other candidate diffusion-barrier materials is that PdOx is a highly stable oxide that can be incorporated into gas sensor structures by use of deposition techniques that are standard in the semiconductor industry. The PdOx layer can be used in a gas sensor structure for improved sensor stability, while maintaining sensitivity. For example, in proof-of-concept experiments, Pt/PdOx/SiC Schottky-diode gas sensors were fabricated and tested. The fabrication process included controlled sputter deposition of PdOx to a thickness of 50 Angstroms on a 400-m-thick SiC substrate, followed by deposition of Pt to a thickness of 450 Angstroms on the PdOx. The SiC substrate (400 microns in thickness) was patterned with photoresist and a Schottky-diode photomask. A lift-off process completed the definition of the Schottky-diode pattern. The sensors were tested by measuring changes in forward currents at a bias potential of 1 V during exposure to H2 in N2 at temperatures

InGaP/InGaAs field-effect transistor typed hydrogen sensor

NASA Astrophysics Data System (ADS)

Tsai, Jung-Hui; Liou, Syuan-Hao; Lin, Pao-Sheng; Chen, Yu-Chi

2018-02-01

In this article, the Pd-based mixture comprising silicon dioxide (SiO2) is applied as sensing material for the InGaP/InGaAs field-effect transistor typed hydrogen sensor. After wet selectively etching the SiO2, the mixture is turned into Pd nanoparticles on an interlayer. Experimental results depict that hydrogen atoms trapped inside the mixture could effectively decrease the gate barrier height and increase the drain current due to the improved sensing properties when Pd nanoparticles were formed by wet etching method. The sensitivity of the gate forward current from air (the reference) to 9800 ppm hydrogen/air environment approaches the high value of 1674. Thus, the studied device shows a good potential for hydrogen sensor and integrated circuit applications.

Ultraviolet Light-Assisted Copper Oxide Nanowires Hydrogen Gas Sensor.

PubMed

Sihar, Nabihah; Tiong, Teck Yaw; Dee, Chang Fu; Ooi, Poh Choon; Hamzah, Azrul Azlan; Mohamed, Mohd Ambri; Majlis, Burhanuddin Yeop

2018-05-15

We fabricated copper oxide nanowires (CuO NWs) ultraviolet (UV) light-assisted hydrogen gas sensor. The fabricated sensor shows promising sensor response behavior towards 100 ppm of H 2 at room temperature and elevated temperature at 100 °C when exposed to UV light (3.0 mW/cm 2 ). One hundred-cycle device stability test has been performed, and it is found that for sample elevated at 100 °C, the UV-activated sample achieved stability in the first cycle as compared to the sample without UV irradiation which needed about 10 cycles to achieve stability at the initial stage, whereas the sample tested at room temperature was able to stabilize with the aid of UV irradiation. This indicates that with the aid of UV light, after some "warming up" time, it is possible for the conventional CuO NW sensor which normally work at elevated temperature to function at room temperature because UV source is speculated to play a dominant role to increase the interaction of the surface of CuO NWs and hydrogen gas molecules absorbed after the light exposure.

Microstructured FBG hydrogen sensor based on Pt-loaded WO₃.

PubMed

Zhou, Xian; Dai, Yutang; Karanja, Joseph Muna; Liu, Fufei; Yang, Minghong

2017-04-17

Hydrogen gas sensing properties of Pt-WO₃ films on spiral microstructured fiber Bragg grating (FBG) has been demonstrated. Pt-WO₃ film was prepared by hydrothermal method. The spiral microsturctured FBG was fabricated using femtosecond laser. Spiral microstructure FBG hydrogen sensor can detect hydrogen concentration from 0.02% H₂ to 4% H₂ at room temperature, and the response time is shortened from a few minutes to 10~30 s. Double spiral microstructure at pitch 60 μm and sputtered with 2 μm Pt-WO₃ film recorded hydrogen sensitivity of 522 pm/%(v/v) H₂ responding to hydrogen gas in air. This translated to approximately 2~4 times higher than the unprocessed standard FBG. The humidity has little effect on the sensing property. The sensor has fast response time, good stability, large detection range and has the good prospect of practical application for hydrogen leak detection.

Development of an Inexpensive RGB Color Sensor for the Detection of Hydrogen Cyanide Gas.

PubMed

Greenawald, Lee A; Boss, Gerry R; Snyder, Jay L; Reeder, Aaron; Bell, Suzanne

2017-10-27

An inexpensive red, green, blue (RGB) color sensor was developed for detecting low ppm concentrations of hydrogen cyanide gas. A piece of glass fiber filter paper containing monocyanocobinamide [CN(H 2 O)Cbi] was placed directly above the RGB color sensor and an on chip LED. Light reflected from the paper was monitored for RGB color change upon exposure to hydrogen cyanide at concentrations of 1.0-10.0 ppm as a function of 25%, 50%, and 85% relative humidity. A rapid color change occurred within 10 s of exposure to 5.0 ppm hydrogen cyanide gas (near the NIOSH recommended exposure limit). A more rapid color change occurred at higher humidity, suggesting a more effective reaction between hydrogen cyanide and CN(H 2 O)Cbi. The sensor could provide the first real time respirator end-of-service-life alert for hydrogen cyanide gas.

Packaging Technologies for High Temperature Electronics and Sensors

NASA Technical Reports Server (NTRS)

Chen, Liang-Yu; Hunter, Gary W.; Neudeck, Philip G.; Beheim, Glenn M.; Spry, David J.; Meredith, Roger D.

2013-01-01

This paper reviews ceramic substrates and thick-film metallization based packaging technologies in development for 500 C silicon carbide (SiC) electronics and sensors. Prototype high temperature ceramic chip-level packages and printed circuit boards (PCBs) based on ceramic substrates of aluminum oxide (Al2O3) and aluminum nitride (AlN) have been designed and fabricated. These ceramic substrate-based chip-level packages with gold (Au) thick-film metallization have been electrically characterized at temperatures up to 550 C. A 96% alumina based edge connector for a PCB level subsystem interconnection has also been demonstrated recently. The 96% alumina packaging system composed of chip-level packages and PCBs has been tested with high temperature SiC devices at 500 C for over 10,000 hours. In addition to tests in a laboratory environment, a SiC JFET with a packaging system composed of a 96% alumina chip-level package and an alumina printed circuit board mounted on a data acquisition circuit board was launched as a part of the MISSE-7 suite to the International Space Station via a Shuttle mission. This packaged SiC transistor was successfully tested in orbit for eighteen months. A spark-plug type sensor package designed for high temperature SiC capacitive pressure sensors was developed. This sensor package combines the high temperature interconnection system with a commercial high temperature high pressure stainless steel seal gland (electrical feed-through). Test results of a packaged high temperature capacitive pressure sensor at 500 C are also discussed. In addition to the pressure sensor package, efforts for packaging high temperature SiC diode-based gas chemical sensors are in process.

Packaging Technologies for High Temperature Electronics and Sensors

NASA Technical Reports Server (NTRS)

Chen, Liangyu; Hunter, Gary W.; Neudeck, Philip G.; Beheim, Glenn M.; Spry, David J.; Meredith, Roger D.

2013-01-01

This paper reviews ceramic substrates and thick-film metallization based packaging technologies in development for 500degC silicon carbide (SiC) electronics and sensors. Prototype high temperature ceramic chip-level packages and printed circuit boards (PCBs) based on ceramic substrates of aluminum oxide (Al2O3) and aluminum nitride (AlN) have been designed and fabricated. These ceramic substrate-based chiplevel packages with gold (Au) thick-film metallization have been electrically characterized at temperatures up to 550degC. A 96% alumina based edge connector for a PCB level subsystem interconnection has also been demonstrated recently. The 96% alumina packaging system composed of chip-level packages and PCBs has been tested with high temperature SiC devices at 500degC for over 10,000 hours. In addition to tests in a laboratory environment, a SiC JFET with a packaging system composed of a 96% alumina chip-level package and an alumina printed circuit board mounted on a data acquisition circuit board was launched as a part of the MISSE-7 suite to the International Space Station via a Shuttle mission. This packaged SiC transistor was successfully tested in orbit for eighteen months. A spark-plug type sensor package designed for high temperature SiC capacitive pressure sensors was developed. This sensor package combines the high temperature interconnection system with a commercial high temperature high pressure stainless steel seal gland (electrical feed-through). Test results of a packaged high temperature capacitive pressure sensor at 500degC are also discussed. In addition to the pressure sensor package, efforts for packaging high temperature SiC diode-based gas chemical sensors are in process.

High Temperature Dynamic Pressure Measurements Using Silicon Carbide Pressure Sensors

NASA Technical Reports Server (NTRS)

Okojie, Robert S.; Meredith, Roger D.; Chang, Clarence T.; Savrun, Ender

2014-01-01

Un-cooled, MEMS-based silicon carbide (SiC) static pressure sensors were used for the first time to measure pressure perturbations at temperatures as high as 600 C during laboratory characterization, and subsequently evaluated in a combustor rig operated under various engine conditions to extract the frequencies that are associated with thermoacoustic instabilities. One SiC sensor was placed directly in the flow stream of the combustor rig while a benchmark commercial water-cooled piezoceramic dynamic pressure transducer was co-located axially but kept some distance away from the hot flow stream. In the combustor rig test, the SiC sensor detected thermoacoustic instabilities across a range of engine operating conditions, amplitude magnitude as low as 0.5 psi at 585 C, in good agreement with the benchmark piezoceramic sensor. The SiC sensor experienced low signal to noise ratio at higher temperature, primarily due to the fact that it was a static sensor with low sensitivity.

Dimension towers of SICs. I. Aligned SICs and embedded tight frames

NASA Astrophysics Data System (ADS)

Appleby, Marcus; Bengtsson, Ingemar; Dumitru, Irina; Flammia, Steven

2017-11-01

Algebraic number theory relates SIC-POVMs in dimension d > 3 to those in dimension d(d - 2). We define a SIC in dimension d(d - 2) to be aligned to a SIC in dimension d if and only if the squares of the overlap phases in dimension d appear as a subset of the overlap phases in dimension d(d - 2) in a specified way. We give 19 (mostly numerical) examples of aligned SICs. We conjecture that given any SIC in dimension d, there exists an aligned SIC in dimension d(d - 2). In all our examples, the aligned SIC has lower dimensional equiangular tight frames embedded in it. If d is odd so that a natural tensor product structure exists, we prove that the individual vectors in the aligned SIC have a very special entanglement structure, and the existence of the embedded tight frames follows as a theorem. If d - 2 is an odd prime number, we prove that a complete set of mutually unbiased bases can be obtained by reducing an aligned SIC to this dimension.

D-region ion-neutral coupled chemistry (Sodankylä Ion Chemistry, SIC) within the Whole Atmosphere Community Climate Model (WACCM 4) - WACCM-SIC and WACCM-rSIC

NASA Astrophysics Data System (ADS)

Kovács, Tamás; Plane, John M. C.; Feng, Wuhu; Nagy, Tibor; Chipperfield, Martyn P.; Verronen, Pekka T.; Andersson, Monika E.; Newnham, David A.; Clilverd, Mark A.; Marsh, Daniel R.

2016-09-01

This study presents a new ion-neutral chemical model coupled into the Whole Atmosphere Community Climate Model (WACCM). The ionospheric D-region (altitudes ˜ 50-90 km) chemistry is based on the Sodankylä Ion Chemistry (SIC) model, a one-dimensional model containing 307 ion-neutral and ion recombination, 16 photodissociation and 7 photoionization reactions of neutral species, positive and negative ions, and electrons. The SIC mechanism was reduced using the simulation error minimization connectivity method (SEM-CM) to produce a reaction scheme of 181 ion-molecule reactions of 181 ion-molecule reactions of 27 positive and 18 negative ions. This scheme describes the concentration profiles at altitudes between 20 km and 120 km of a set of major neutral species (HNO3, O3, H2O2, NO, NO2, HO2, OH, N2O5) and ions (O2+, O4+, NO+, NO+(H2O), O2+(H2O), H+(H2O), H+(H2O)2, H+(H2O)3, H+(H2O)4, O3-, NO2-, O-, O2, OH-, O2-(H2O), O2-(H2O)2, O4-, CO3-, CO3-(H2O), CO4-, HCO3-, NO2-, NO3-, NO3-(H2O), NO3-(H2O)2, NO3-(HNO3), NO3-(HNO3)2, Cl-, ClO-), which agree with the full SIC mechanism within a 5 % tolerance. Four 3-D model simulations were then performed, using the impact of the January 2005 solar proton event (SPE) on D-region HOx and NOx chemistry as a test case of four different model versions: the standard WACCM (no negative ions and a very limited set of positive ions); WACCM-SIC (standard WACCM with the full SIC chemistry of positive and negative ions); WACCM-D (standard WACCM with a heuristic reduction of the SIC chemistry, recently used to examine HNO3 formation following an SPE); and WACCM-rSIC (standard WACCM with a reduction of SIC chemistry using the SEM-CM method). The standard WACCM misses the HNO3 enhancement during the SPE, while the full and reduced model versions predict significant NOx, HOx and HNO3 enhancements in the mesosphere during solar proton events. The SEM-CM reduction also identifies the important ion-molecule reactions that affect the partitioning of

Residual stress in thick low-pressure chemical-vapor deposited polycrystalline SiC coatings on Si substrates

NASA Astrophysics Data System (ADS)

Choi, D.; Shinavski, R. J.; Steffier, W. S.; Spearing, S. M.

2005-04-01

Residual stress in thick coatings of polycrystalline chemical-vapor deposited SiC on Si substrates is a key variable that must be controlled if SiC is to be used in microelectromechanical systems. Studies have been conducted to characterize the residual stress level as a function of deposition temperature, Si wafer and SiC coating thickness, and the ratios of methyltrichlorosilane to hydrogen and hydrogen chloride. Wafer curvature was used to monitor residual stress in combination with a laminated plate analysis. Compressive intrinsic (growth) stresses were measured with magnitudes in the range of 200-300MPa; however, these can be balanced with the tensile stress due to the thermal-expansion mismatch to leave near-zero stress at room temperature. The magnitude of the compressive intrinsic stress is consistent with previously reported values of surface stress in combination with the competition between grain-boundary energy and elastic strain energy.

Palladium Gate All Around - Hetero Dielectric -Tunnel FET based highly sensitive Hydrogen Gas Sensor

NASA Astrophysics Data System (ADS)

Madan, Jaya; Chaujar, Rishu

2016-12-01

The paper presents a novel highly sensitive Hetero-Dielectric-Gate All Around Tunneling FET (HD-GAA-TFET) based Hydrogen Gas Sensor, incorporating the advantages of band to band tunneling (BTBT) mechanism. Here, the Palladium supported silicon dioxide is used as a sensing media and sensing relies on the interaction of hydrogen with Palladium-SiO2-Si. The high surface to volume ratio in the case of cylindrical GAA structure enhances the fortuities for surface reactions between H2 gas and Pd, and thus improves the sensitivity and stability of the sensor. Behaviour of the sensor in presence of hydrogen and at elevated temperatures is discussed. The conduction path of the sensor which is dependent on sensors radius has also been varied for the optimized sensitivity and static performance analysis of the sensor where the proposed design exhibits a superior performance in terms of threshold voltage, subthreshold swing, and band to band tunneling rate. Stability of the sensor with respect to temperature affectability has also been studied, and it is found that the device is reasonably stable and highly sensitive over the bearable temperature range. The successful utilization of HD-GAA-TFET in gas sensors may open a new door for the development of novel nanostructure gas sensing devices.

Improved Method of Manufacturing SiC Devices

NASA Technical Reports Server (NTRS)

Okojie, Robert S.

2005-01-01

The phrase, "common-layered architecture for semiconductor silicon carbide" ("CLASSiC") denotes a method of batch fabrication of microelectromechanical and semiconductor devices from bulk silicon carbide. CLASSiC is the latest in a series of related methods developed in recent years in continuing efforts to standardize SiC-fabrication processes. CLASSiC encompasses both institutional and technological innovations that can be exploited separately or in combination to make the manufacture of SiC devices more economical. Examples of such devices are piezoresistive pressure sensors, strain gauges, vibration sensors, and turbulence-intensity sensors for use in harsh environments (e.g., high-temperature, high-pressure, corrosive atmospheres). The institutional innovation is to manufacture devices for different customers (individuals, companies, and/or other entities) simultaneously in the same batch. This innovation is based on utilization of the capability for fabrication, on the same substrate, of multiple SiC devices having different functionalities (see figure). Multiple customers can purchase shares of the area on the same substrate, each customer s share being apportioned according to the customer s production-volume requirement. This makes it possible for multiple customers to share costs in a common foundry, so that the capital equipment cost per customer in the inherently low-volume SiC-product market can be reduced significantly. One of the technological innovations is a five-mask process that is based on an established set of process design rules. The rules provide for standardization of the fabrication process, yet are flexible enough to enable multiple customers to lay out masks for their portions of the SiC substrate to provide for simultaneous batch fabrication of their various devices. In a related prior method, denoted multi-user fabrication in silicon carbide (MUSiC), the fabrication process is based largely on surface micromachining of poly SiC

Research on High Sensitive D-Shaped FBG Hydrogen Sensors in Power Transformer Oil

PubMed Central

Luo, Ying-Ting; Wang, Hong-Bin; Ma, Guo-Ming; Song, Hong-Tu; Li, Chengrong; Jiang, Jun

2016-01-01

Dissolved hydrogen is a symbol gas decomposed by power transformer oil for electrical faults such as overheat or partial discharges. A novel D-shaped fiber Bragg grating (D-FBG) sensor is herein proposed and was fabricated with magnetron sputtering to measure the dissolved hydrogen concentration in power transformer oil in this paper. Different from the RI (refractive index)-based effect, D-FBG in this case is sensitive to curvature caused by stress from sensing coating, leading to Bragg wavelength shifts accordingly. The relationship between the D-FBG wavelength shift and dissolved hydrogen concentration in oil was measured experimentally in the laboratory. The detected sensitivity could be as high as 1.96 μL/L at every 1-pm wavelength shift. The results proved that a simple, polished FBG-based hydrogen sensor provides a linear measuring characteristic in the range of low hydrogen concentrations in transformer oil. Moreover, the stable hydrogen sensing performance was investigated by X-ray diffraction analysis. PMID:27782034

Research on High Sensitive D-Shaped FBG Hydrogen Sensors in Power Transformer Oil.

PubMed

Luo, Ying-Ting; Wang, Hong-Bin; Ma, Guo-Ming; Song, Hong-Tu; Li, Chengrong; Jiang, Jun

2016-10-04

Dissolved hydrogen is a symbol gas decomposed by power transformer oil for electrical faults such as overheat or partial discharges. A novel D-shaped fiber Bragg grating (D-FBG) sensor is herein proposed and was fabricated with magnetron sputtering to measure the dissolved hydrogen concentration in power transformer oil in this paper. Different from the RI (refractive index)-based effect, D-FBG in this case is sensitive to curvature caused by stress from sensing coating, leading to Bragg wavelength shifts accordingly. The relationship between the D-FBG wavelength shift and dissolved hydrogen concentration in oil was measured experimentally in the laboratory. The detected sensitivity could be as high as 1.96 μL/L at every 1-pm wavelength shift. The results proved that a simple, polished FBG-based hydrogen sensor provides a linear measuring characteristic in the range of low hydrogen concentrations in transformer oil. Moreover, the stable hydrogen sensing performance was investigated by X-ray diffraction analysis.

Characteristics of Hydrogen Sensors Based on Thin Tin Dioxide Films Modified with Gold

NASA Astrophysics Data System (ADS)

Almaev, A. V.; Gaman, V. I.

2017-11-01

Effect of hydrogen in the concentration range from 10 to 2000 ppm on the characteristics of sensors based on thin films of tin dioxide modified with gold (Au/SnO2:Sb, Au) is studied in the thermo-cyclic mode at temperatures from 623 to 773 K and absolute humidity from 2.5 to 20 g/m3. Experimental data are discussed using expressions obtained within the framework of a model that takes into account the presence of three types of adsorbed particles (O¯, OH, and OH¯) on the surface of SnO2 nanocrystals. The characteristics of the sensors based on thin Pt/Pd/SnO2:Sb films (the first series) are compared with those of Au/SnO2:Sb, Au films (the second series). It is found that the degree of dissociation of molecular hydrogen into atoms during adsorption on the sensor under interaction with Au particles on the SnO2 surface is 4 times greater than that under interaction with Pt/Pd particles. The degree of dissociation of H2O molecules into hydrogen atoms and hydroxyl groups in pure moist air on the surface of the sensors of the second series is 1.6 times greater than that for the sensors of the first series. Thus, gold is a more effective stimulator of the dissociation of H2 and H2O molecules than platinum and palladium. A formula is obtained that describes more accurately the dependence of the response of the sensors of both series to the effect of hydrogen on the concentration of this gas and on the temperature of the measuring devices.

Facile one-step electrochemical deposition of copper nanoparticles and reduced graphene oxide as nonenzymatic hydrogen peroxide sensor

NASA Astrophysics Data System (ADS)

Moozarm Nia, Pooria; Woi, Pei Meng; Alias, Yatimah

2017-08-01

For several decades, hydrogen peroxide has exhibited to be an extremely significant analyte as an intermediate in several biological devices as well as in many industrial systems. A straightforward and novel one-step technique was employed to develop a sensitive non-enzymatic hydrogen peroxide (H2O2) sensor by simultaneous electrodeposition of copper nanoparticles (CuNPs) and reduced graphene oxide (rGO). The electroreduction performance of the CuNPs-rGO for hydrogen peroxide detection was studied by cyclic voltammetry (CV) and chronoamperometry (AMP) methods The CuNPs-rGO showed a synergistic effect of reduced graphene oxide and copper nanoparticles towards the electroreduction of hydrogen peroxide, indicating high reduction current. At detection potential of -0.2 V, the CuNPs-rGO sensor demonstrated a wide linear range up to 18 mM with a detection limit of 0.601 mM (S/N = 3). Furthermore, with addition of hydrogen peroxide, the sensor responded very quickly (<3 s). The CuNPs-rGO presents high selectivity, sensitivity, stability and fast amperometric sensing towards hydrogen peroxide which makes it favorable for the development of non-enzymatic hydrogen peroxide sensor.

Electronic and optical properties of hydrogenated silicon carbide nanosheets: A DFT study

NASA Astrophysics Data System (ADS)

Delavari, Najmeh; Jafari, Mahmoud

2018-07-01

Density-functional theory has been applied to investigate the effect of hydrogen adsorption on silicon carbide (SiC) nanosheets, considering six, different configurations for adsorption process. The chair-like configuration is found to be the most stable because of the adsorption of hydrogen atoms by silicon and carbon atoms on the opposite sides. The pure and hydrogenated SiC monolayers are also found to be sp2- and sp3-hybridized, respectively. The binding energy of the hydrogen atoms in the chair-like structure is calculated about -3.845 eV, implying the system to be much more stable than the same study based on graphene, though with nearly the same electronic properties, strongly proposing the SiC monolayer to be a promising material for next generation hydrogen storage. Optical properties presented in terms of the real and the imaginary parts of the dielectric function also demonstrate a decrease in the dielectric constant and the static refractive index due to hydrogen adsorption with the Plasmon frequency of the chair-like, hydrogenated monolayer, occurring at higher energies compared to that of the pure one.

High Temperature Electronics for Intelligent Harsh Environment Sensors

NASA Technical Reports Server (NTRS)

Evans, Laura J.

2008-01-01

The development of intelligent instrumentation systems is of high interest in both public and private sectors. In order to obtain this ideal in extreme environments (i.e., high temperature, extreme vibration, harsh chemical media, and high radiation), both sensors and electronics must be developed concurrently in order that the entire system will survive for extended periods of time. The semiconductor silicon carbide (SiC) has been studied for electronic and sensing applications in extreme environment that is beyond the capability of conventional semiconductors such as silicon. The advantages of SiC over conventional materials include its near inert chemistry, superior thermomechanical properties in harsh environments, and electronic properties that include high breakdown voltage and wide bandgap. An overview of SiC sensors and electronics work ongoing at NASA Glenn Research Center (NASA GRC) will be presented. The main focus will be two technologies currently being investigated: 1) harsh environment SiC pressure transducers and 2) high temperature SiC electronics. Work highlighted will include the design, fabrication, and application of SiC sensors and electronics, with recent advancements in state-of-the-art discussed as well. These combined technologies are studied for the goal of developing advanced capabilities for measurement and control of aeropropulsion systems, as well as enhancing tools for exploration systems.

A fast response hydrogen sensor with Pd metallic grating onto a fiber's end-face

NASA Astrophysics Data System (ADS)

Yan, Haitao; Zhao, Xiaoyan; Zhang, Chao; Li, Qiu-Ze; Cao, Jingxiao; Han, Dao-Fu; Hao, Hui; Wang, Ming

2016-01-01

We demonstrated an integrated hydrogen sensor with Pd metallic grating fabricated on a fiber end-face. The grating consists of three thin metal layers in stacks, Au, WO3 and Pd. The WO3 is used as a waveguide layer between the Pd and Au layer. The Pd layer is etched by using a focused ion beam (FIB) method, forming a Pd metallic grating with period of 450 nm. The sensor is experimentally exposed to hydrogen gas environment. Changing the concentration from 0% to 4% which is the low explosive limit (LEL), the resonant wavelength measured from the reflection experienced 28.10 nm spectral changes in the visible range. The results demonstrated that the sensor is sensitive for hydrogen detection and it has fast response and low temperature effect.

The Abundance of SiC2 in Carbon Star Envelopes: Evidence that SiC2 is a gas-phase precursor of SiC dust.

PubMed

Massalkhi, Sarah; Agúndez, M; Cernicharo, J; Velilla Prieto, L; Goicoechea, J R; Quintana-Lacaci, G; Fonfría, J P; Alcolea, J; Bujarrabal, V

2018-03-01

Silicon carbide dust is ubiquitous in circumstellar envelopes around C-rich AGB stars. However, the main gas-phase precursors leading to the formation of SiC dust have not yet been identified. The most obvious candidates among the molecules containing an Si-C bond detected in C-rich AGB stars are SiC 2 , SiC, and Si 2 C. To date, the ring molecule SiC 2 has been observed in a handful of evolved stars, while SiC and Si 2 C have only been detected in the C-star envelope IRC +10216. We aim to study how widespread and abundant SiC 2 , SiC, and Si 2 C are in envelopes around C-rich AGB stars and whether or not these species play an active role as gas-phase precursors of silicon carbide dust in the ejecta of carbon stars. We carried out sensitive observations with the IRAM 30m telescope of a sample of 25 C-rich AGB stars to search for emission lines of SiC 2 , SiC, and Si 2 C in the λ 2 mm band. We performed non-LTE excitation and radiative transfer calculations based on the LVG method to model the observed lines of SiC 2 and to derive SiC 2 fractional abundances in the observed envelopes. We detect SiC 2 in most of the sources, SiC in about half of them, and do not detect Si 2 C in any source, at the exception of IRC +10216. Most of these detections are reported for the first time in this work. We find a positive correlation between the SiC and SiC 2 line emission, which suggests that both species are chemically linked, the SiC radical probably being the photodissociation product of SiC 2 in the external layer of the envelope. We find a clear trend in which the denser the envelope, the less abundant SiC 2 is. The observed trend is interpreted as an evidence of efficient incorporation of SiC 2 onto dust grains, a process which is favored at high densities owing to the higher rate at which collisions between particles take place. The observed behavior of a decline in the SiC 2 abundance with increasing density strongly suggests that SiC 2 is an important gas

U.S. Department of Energy Accident Resistant SiC Clad Nuclear Fuel Development

DOE Office of Scientific and Technical Information (OSTI.GOV)

George W. Griffith

2011-10-01

A significant effort is being placed on silicon carbide ceramic matrix composite (SiC CMC) nuclear fuel cladding by Light Water Reactor Sustainability (LWRS) Advanced Light Water Reactor Nuclear Fuels Pathway. The intent of this work is to invest in a high-risk, high-reward technology that can be introduced in a relatively short time. The LWRS goal is to demonstrate successful advanced fuels technology that suitable for commercial development to support nuclear relicensing. Ceramic matrix composites are an established non-nuclear technology that utilizes ceramic fibers embedded in a ceramic matrix. A thin interfacial layer between the fibers and the matrix allows formore » ductile behavior. The SiC CMC has relatively high strength at high reactor accident temperatures when compared to metallic cladding. SiC also has a very low chemical reactivity and doesn't react exothermically with the reactor cooling water. The radiation behavior of SiC has also been studied extensively as structural fusion system components. The SiC CMC technology is in the early stages of development and will need to mature before confidence in the developed designs can created. The advanced SiC CMC materials do offer the potential for greatly improved safety because of their high temperature strength, chemical stability and reduced hydrogen generation.« less

Hafnium—an optical hydrogen sensor spanning six orders in pressure

PubMed Central

Boelsma, C.; Bannenberg, L. J.; van Setten, M. J.; Steinke, N.-J.; van Well, A. A.; Dam, B.

2017-01-01

Hydrogen detection is essential for its implementation as an energy vector. So far, palladium is considered to be the most effective hydrogen sensing material. Here we show that palladium-capped hafnium thin films show a highly reproducible change in optical transmission in response to a hydrogen exposure ranging over six orders of magnitude in pressure. The optical signal is hysteresis-free within this range, which includes a transition between two structural phases. A temperature change results in a uniform shift of the optical signal. This, to our knowledge unique, feature facilitates the sensor calibration and suggests a constant hydrogenation enthalpy. In addition, it suggests an anomalously steep increase of the entropy with the hydrogen/metal ratio that cannot be explained on the basis of a classical solid solution model. The optical behaviour as a function of its hydrogen content makes hafnium well-suited for use as a hydrogen detection material. PMID:28580959

A new amperometric nanostructured sensor for the analytical determination of hydrogen peroxide.

PubMed

Guascito, M R; Filippo, E; Malitesta, C; Manno, D; Serra, A; Turco, A

2008-12-01

A new amperometric, nanostructured sensor for the analytical determination of hydrogen peroxide is proposed. This sensor was constructed by immobilizing silver nanoparticles in a polyvinyl alcohol (PVA) film on a platinum electrode, which was performed by direct drop-casting silver nanoparticles that were capped in a PVA colloidal suspension. UV-vis spectroscopy, X-ray diffraction and transmission electron microscopy were used to give a complete characterization of the nanostructured film. Cyclic voltammetry experiments yielded evidence that silver nanoparticles facilitate hydrogen peroxide reduction, showing excellent catalytic activity. Moreover, the cronoamperometric response of modified sensors was dependent on nanoparticle lifetime. Experiments were performed, using freshly prepared solutions, after 4 and 8 days. Results concerning the quantitative analysis of hydrogen peroxide, in terms of detection limit, linear range, sensitivity and standard deviation (STD), are discussed for each tested sensor type. Utilization of two different linear ranges (40 microM to 6mM and 1.25 microM to 1.0mM) enabled the assessment of concentration intervals having up to three orders of magnitude. Moreover, the electrode made using a 4-day-old solution showed the maximal sensitivity of 128 nA microM(-1)(4090 nA microM(-1)cm(-2)), yielding a limit of detection of 1 microuM and STD of 2.5 microAmM(-1). All of these analytical parameters make the constructed sensors suitable for peroxide determination in aqueous solution.

A reflective hydrogen sensor based on fiber ring laser with PCF modal interferometer

NASA Astrophysics Data System (ADS)

Zhang, Ya-Nan; Zhang, Aozhuo; Han, Bo; E, Siyu

2018-06-01

A new hydrogen sensor based on a fiber ring laser with a photonic crystal fiber (PCF) modal interferometer is proposed. The reflective PCF modal interferometer, which is fabricated by forming two collapse regions on the two ends of PCF with a fusion discharge technique, is utilized as the sensing head and filter. Particularly, the Pd/WO3 hydrogen-sensitive thin film is coated on the PCF for hydrogen sensing. The combination of the fiber ring laser and PCF modal interferometer gives the sensor a high signal-to-noise ratio and an improved detection limit. Experimental results show that the sensing system can achieve a hydrogen sensitivity of 1.28 nm/%, a high signal-to-noise ratio (∼30 dB), a narrow full width at half maximum (∼0.05 nm), and low detection limit of 0.0133%.

Highly Sensitive and Selective Hydrogen Gas Sensor Using the Mesoporous SnO₂ Modified Layers.

PubMed

Xue, Niuzi; Zhang, Qinyi; Zhang, Shunping; Zong, Pan; Yang, Feng

2017-10-14

It is important to improve the sensitivities and selectivities of metal oxide semiconductor (MOS) gas sensors when they are used to monitor the state of hydrogen in aerospace industry and electronic field. In this paper, the ordered mesoporous SnO₂ (m-SnO₂) powders were prepared by sol-gel method, and the morphology and structure were characterized by X-ray diffraction analysis (XRD), transmission electron microscope (TEM) and Brunauer-Emmett-Teller (BET). The gas sensors were fabricated using m-SnO₂ as the modified layers on the surface of commercial SnO₂ (c-SnO₂) by screen printing technology, and tested for gas sensing towards ethanol, benzene and hydrogen with operating temperatures ranging from 200 °C to 400 °C. Higher sensitivity was achieved by using the modified m-SnO₂ layers on the c-SnO₂ gas sensor, and it was found that the S(c/m2) sensor exhibited the highest response (Ra/Rg = 22.2) to 1000 ppm hydrogen at 400 °C. In this paper, the mechanism of the sensitivity and selectivity improvement of the gas sensors is also discussed.

The Abundance of SiC2 in Carbon Star Envelopes⋆: Evidence that SiC2 is a gas-phase precursor of SiC dust

PubMed Central

Massalkhi, Sarah; Agúndez, M.; Cernicharo, J.; Velilla Prieto, L.; Goicoechea, J. R.; Quintana-Lacaci, G.; Fonfría, J. P.; Alcolea, J.; Bujarrabal, V.

2017-01-01

Context Silicon carbide dust is ubiquitous in circumstellar envelopes around C-rich AGB stars. However, the main gas-phase precursors leading to the formation of SiC dust have not yet been identified. The most obvious candidates among the molecules containing an Si–C bond detected in C-rich AGB stars are SiC2, SiC, and Si2C. To date, the ring molecule SiC2 has been observed in a handful of evolved stars, while SiC and Si2C have only been detected in the C-star envelope IRC +10216. Aims We aim to study how widespread and abundant SiC2, SiC, and Si2C are in envelopes around C-rich AGB stars and whether or not these species play an active role as gas-phase precursors of silicon carbide dust in the ejecta of carbon stars. Methods We carried out sensitive observations with the IRAM 30m telescope of a sample of 25 C-rich AGB stars to search for emission lines of SiC2, SiC, and Si2C in the λ 2 mm band. We performed non-LTE excitation and radiative transfer calculations based on the LVG method to model the observed lines of SiC2 and to derive SiC2 fractional abundances in the observed envelopes. Results We detect SiC2 in most of the sources, SiC in about half of them, and do not detect Si2C in any source, at the exception of IRC +10216. Most of these detections are reported for the first time in this work. We find a positive correlation between the SiC and SiC2 line emission, which suggests that both species are chemically linked, the SiC radical probably being the photodissociation product of SiC2 in the external layer of the envelope. We find a clear trend in which the denser the envelope, the less abundant SiC2 is. The observed trend is interpreted as an evidence of efficient incorporation of SiC2 onto dust grains, a process which is favored at high densities owing to the higher rate at which collisions between particles take place. Conclusions The observed behavior of a decline in the SiC2 abundance with increasing density strongly suggests that SiC2 is an important

Liquid Hydrogen Sensor Considerations for Space Exploration

NASA Technical Reports Server (NTRS)

Moran, Matthew E.

2006-01-01

The on-orbit management of liquid hydrogen planned for the return to the moon will introduce new considerations not encountered in previous missions. This paper identifies critical liquid hydrogen sensing needs from the perspective of reliable on-orbit cryogenic fluid management, and contrasts the fundamental differences in fluid and thermodynamic behavior for ground-based versus on-orbit conditions. Opportunities for advanced sensor development and implementation are explored in the context of critical Exploration Architecture operations such as on-orbit storage, docking, and trans-lunar injection burn. Key sensing needs relative to these operations are also examined, including: liquid/vapor detection, thermodynamic condition monitoring, mass gauging, and leak detection. Finally, operational aspects of an integrated system health management approach are discussed to highlight the potential impact on mission success.

Early implementation of SiC cladding fuel performance models in BISON

DOE Office of Scientific and Technical Information (OSTI.GOV)

Powers, Jeffrey J.

2015-09-18

SiC-based ceramic matrix composites (CMCs) [5–8] are being developed and evaluated internationally as potential LWR cladding options. These development activities include interests within both the DOE-NE LWR Sustainability (LWRS) Program and the DOE-NE Advanced Fuels Campaign. The LWRS Program considers SiC ceramic matrix composites (CMCs) as offering potentially revolutionary gains as a cladding material, with possible benefits including more efficient normal operating conditions and higher safety margins under accident conditions [9]. Within the Advanced Fuels Campaign, SiC-based composites are a candidate ATF cladding material that could achieve several goals, such as reducing the rates of heat and hydrogen generation duemore » to lower cladding oxidation rates in HT steam [10]. This work focuses on the application of SiC cladding as an ATF cladding material in PWRs, but these work efforts also support the general development and assessment of SiC as an LWR cladding material in a much broader sense.« less

Test Methodologies for Hydrogen Sensor Performance Assessment: Chamber vs. Flow Through Test Apparatus: Preprint

DOE Office of Scientific and Technical Information (OSTI.GOV)

Buttner, William J; Hartmann, Kevin S; Schmidt, Kara

Certification of hydrogen sensors to standards often prescribes using large-volume test chambers [1, 2]. However, feedback from stakeholders such as sensor manufacturers and end-users indicate that chamber test methods are often viewed as too slow and expensive for routine assessment. Flow through test methods potentially are an efficient, cost-effective alternative for sensor performance assessment. A large number of sensors can be simultaneously tested, in series or in parallel, with an appropriate flow through test fixture. The recent development of sensors with response times of less than 1s mandates improvements in equipment and methodology to properly capture the performance of thismore » new generation of fast sensors; flow methods are a viable approach for accurate response and recovery time determinations, but there are potential drawbacks. According to ISO 26142 [1], flow through test methods may not properly simulate ambient applications. In chamber test methods, gas transport to the sensor can be dominated by diffusion which is viewed by some users as mimicking deployment in rooms and other confined spaces. Alternatively, in flow through methods, forced flow transports the gas to the sensing element. The advective flow dynamics may induce changes in the sensor behaviour relative to the quasi-quiescent condition that may prevail in chamber test methods. One goal of the current activity in the JRC and NREL sensor laboratories [3, 4] is to develop a validated flow through apparatus and methods for hydrogen sensor performance testing. In addition to minimizing the impact on sensor behaviour induced by differences in flow dynamics, challenges associated with flow through methods include the ability to control environmental parameters (humidity, pressure and temperature) during the test and changes in the test gas composition induced by chemical reactions with upstream sensors. Guidelines on flow through test apparatus design and protocols for the

Highly Sensitive and Selective Hydrogen Gas Sensor Using the Mesoporous SnO2 Modified Layers

PubMed Central

Xue, Niuzi; Zhang, Qinyi; Zhang, Shunping; Zong, Pan; Yang, Feng

2017-01-01

It is important to improve the sensitivities and selectivities of metal oxide semiconductor (MOS) gas sensors when they are used to monitor the state of hydrogen in aerospace industry and electronic field. In this paper, the ordered mesoporous SnO2 (m-SnO2) powders were prepared by sol-gel method, and the morphology and structure were characterized by X-ray diffraction analysis (XRD), transmission electron microscope (TEM) and Brunauer–Emmett–Teller (BET). The gas sensors were fabricated using m-SnO2 as the modified layers on the surface of commercial SnO2 (c-SnO2) by screen printing technology, and tested for gas sensing towards ethanol, benzene and hydrogen with operating temperatures ranging from 200 °C to 400 °C. Higher sensitivity was achieved by using the modified m-SnO2 layers on the c-SnO2 gas sensor, and it was found that the S(c/m2) sensor exhibited the highest response (Ra/Rg = 22.2) to 1000 ppm hydrogen at 400 °C. In this paper, the mechanism of the sensitivity and selectivity improvement of the gas sensors is also discussed. PMID:29036898

Study of a solid hydrogen cooler for spacecraft instruments and sensors

NASA Astrophysics Data System (ADS)

Sherman, A.

1980-08-01

The results of tests and studies to investigate the utilization of solid hydrogen for cooling of spacecraft instruments and sensors are presented. The results are presented in two sections; the first describing the tests in which an existing single stage solid cooler was filled and tested with solid hydrogen and the second which describes the analysis and design of a catalytic converter which will be tested in the vent line of the cooler.

Study of a solid hydrogen cooler for spacecraft instruments and sensors

NASA Technical Reports Server (NTRS)

Sherman, A.

1980-01-01

The results of tests and studies to investigate the utilization of solid hydrogen for cooling of spacecraft instruments and sensors are presented. The results are presented in two sections; the first describing the tests in which an existing single stage solid cooler was filled and tested with solid hydrogen and the second which describes the analysis and design of a catalytic converter which will be tested in the vent line of the cooler.

An Overview of Wide Bandgap Silicon Carbide Sensors and Electronics Development at NASA Glenn Research Center

NASA Technical Reports Server (NTRS)

Hunter, Gary W.; Neudeck, Philip G.; Beheim, Glenn M.; Okojie, Robert S.; Chen, Liangyu; Spry, D.; Trunek, A.

2007-01-01

A brief overview is presented of the sensors and electronics development work ongoing at NASA Glenn Research Center which is intended to meet the needs of future aerospace applications. Three major technology areas are discussed: 1) high temperature SiC electronics, 2) SiC gas sensor technology development, and 3) packaging of harsh environment devices. Highlights of this work include world-record operation of SiC electronic devices including 500?C JFET transistor operation with excellent properties, atomically flat SiC gas sensors integrated with an on-chip temperature detector/heater, and operation of a packaged AC amplifier. A description of the state-of-the-art is given for each topic. It is concluded that significant progress has been made and that given recent advancements the development of high temperature smart sensors is envisioned.

Silicon Carbide Sensors and Electronics for Harsh Environment Applications

NASA Technical Reports Server (NTRS)

Evans, Laura J.

2007-01-01

Silicon carbide (SiC) semiconductor has been studied for electronic and sensing applications in extreme environment (high temperature, extreme vibration, harsh chemical media, and high radiation) that is beyond the capability of conventional semiconductors such as silicon. This is due to its near inert chemistry, superior thermomechanical and electronic properties that include high breakdown voltage and wide bandgap. An overview of SiC sensors and electronics work ongoing at NASA Glenn Research Center (NASA GRC) will be presented. The main focus will be two technologies currently being investigated: 1) harsh environment SiC pressure transducers and 2) high temperature SiC electronics. Work highlighted will include the design, fabrication, and application of SiC sensors and electronics, with recent advancements in state-of-the-art discussed as well. These combined technologies are studied for the goal of developing advanced capabilities for measurement and control of aeropropulsion systems, as well as enhancing tools for exploration systems.

A modified cross-correlation method for white-light optical fiber extrinsic Fabry-Perot interferometric hydrogen sensors

NASA Astrophysics Data System (ADS)

Yang, Zhen; Zhang, Min; Liao, Yanbiao; Lai, Shurong; Tian, Qian; Li, Qisheng; Zhang, Yi; Zhuang, Zhi

2009-11-01

An extrinsic Fabry-Perot interferometric (EFPI) optical fiber hydrogen sensor based on palladium silver (Pd-Ag) film is designed for hydrogen leakage detection. A modified cross correlation signal processing method for an optical fiber EFPI hydrogen sensor is presented. As the applying of a special correlating factor which advises the effect on the fringe visibility of the gap length and wavelength, the cross correlation method has a high accuracy which is insensitive to light source power drift or changes in attenuation in the fiber, and the segment search method is employed to reduce computation and demodulating speed is fast. The Fabry-Perot gap length resolution of better than 0.2nm is achieved in a certain concentration of hydrogen.

Polyaniline nanowires-gold nanoparticles hybrid network based chemiresistive hydrogen sulfide sensor

NASA Astrophysics Data System (ADS)

Shirsat, Mahendra D.; Bangar, Mangesh A.; Deshusses, Marc A.; Myung, Nosang V.; Mulchandani, Ashok

2009-02-01

We report a sensitive, selective, and fast responding room temperature chemiresistive sensor for hydrogen sulfide detection and quantification using polyaniline nanowires-gold nanoparticles hybrid network. The sensor was fabricated by facile electrochemical technique. Initially, polyaniline nanowires with a diameter of 250-320 nm bridging the gap between a pair of microfabricated gold electrodes were synthesized using templateless electrochemical polymerization using a two step galvanostatic technique. Polyaniline nanowires were then electrochemically functionalized with gold nanoparticles using cyclic voltammetry technique. These chemiresistive sensors show an excellent limit of detection (0.1 ppb), wide dynamic range (0.1-100 ppb), and very good selectivity and reproducibility.

Superconducting characteristics of short MgB2 wires of long level sensor for liquid hydrogen

NASA Astrophysics Data System (ADS)

Takeda, M.; Inoue, Y.; Maekawa, K.; Matsuno, Y.; Fujikawa, S.; Kumakura, H.

2015-12-01

To establish the worldwide storage and marine transport of hydrogen, it is important to develop a high-precision and long level sensor, such as a superconducting magnesium diboride (MgB2) level sensor for large liquid hydrogen (LH2) tanks on board ships. Three 1.7- m-long MgB2 wires were fabricated by an in situ method, and the superconducting characteristics of twenty-four 20-mm-long MgB2 wires on the 1.7-m-long wires were studied. In addition, the static level-detecting characteristics of five 500-mm-long MgB2 level sensors were evaluated under atmospheric pressure.

Hydrogen sensor based on Sm-doped SnO{sub 2} nanostructures

DOE Office of Scientific and Technical Information (OSTI.GOV)

Singh, Gurpreet; Hastir, Anita; Singh, Ravi Chand, E-mail: ravichand.singh@gmail.com

2016-05-23

In this paper the effect of samarium doping on the structural and hydrogen gas sensing properties of SnO{sub 2} nanoparticles has been reported. X-ray Diffraction (XRD) results revealed tetragonal rutile structure of both undoped and Sm-doped SnO{sub 2} nanoparticles. It has been observed that doping with samarium led to reduction in crystallite size of SnO{sub 2} nanoparticles which was confirmed from XRD analysis. Shifting and broadening of Raman peaks in case of doped nanoparticles has been explained by well-known phonon confinement model. The optimum operable temperature of both the sensors was found to 400 °C and the sensor response towardsmore » hydrogen gas has been improved after doping with samarium which was attributed to increase in sensing sites for the gas adsorption.« less

A fiber-optic sensor for accurately monitoring biofilm growth in a hydrogen production photobioreactor.

PubMed

Zhong, Nianbing; Liao, Qiang; Zhu, Xun; Chen, Rong

2014-04-15

A new simple fiber-optic evanescent wave sensor was created to accurately monitor the growth and hydrogen production performance of biofilms. The proposed sensor consists of two probes (i.e., a sensor and reference probe), using the etched fibers with an appropriate surface roughness to improve its sensitivity. The sensor probe measures the biofilm growth and change of liquid-phase concentration inside the biofilm. The reference probe is coated with a hydrophilic polytetrafluoroethylene membrane to separate the liquids from photosynthetic bacteria Rhodopseudomonas palustris CQK 01 and to measure the liquid concentration. We also developed a model to demonstrate the accuracy of the measurement. The biofilm measurement was calibrated using an Olympus microscope. A linear relationship was obtained for the biofilm thickness range from 0 to 120 μm with a synthetic medium under continuous supply to the bioreactor. The highest level of hydrogen production rate occurred at a thickness of 115 μm.

High-temperature effect of hydrogen on sintered alpha-silicon carbide

NASA Technical Reports Server (NTRS)

Hallum, G. W.; Herbell, T. P.

1986-01-01

Sintered alpha-silicon carbide was exposed to pure, dry hydrogen at high temperatures for times up to 500 hr. Weight loss and corrosion were seen after 50 hr at temperatures as low as 1000 C. Corrosion of SiC by hydrogen produced grain boundary deterioration at 1100 C and a mixture of grain and grain boundary deterioration at 1300 C. Statistically significant strength reductions were seen in samples exposed to hydrogen for times greater than 50 hr and temperatures above 1100 C. Critical fracture origins were identified by fractography as either general grain boundary corrision at 1100 C or as corrosion pits at 1300 C. A maximum strength decrease of approximately 33 percent was seen at 1100 and 1300 C after 500 hr exposure to hydrogen. A computer assisted thermodynamic program was also used to predict possible reaction species of SiC and hydrogen.

A dual-phase microstructural approach to damage and fracture of Ti 3SiC 2/SiC joints

DOE PAGES

Nguyen, Ba Nghiep; Henager, Charles H.; Kurtz, Richard J.

2017-12-05

We investigate the microcracking mechanisms responsible for Ti 3SiC 2/SiC joint damage observed at the macroscopic scale after neutron irradiation experiments in detail. A dual-phase microstructural approach to damage and fracture of Ti 3SiC 2/SiC joints is developed that uses a finely discretized two-phase domain based on a digital image of an actual microstructure involving embedded Ti 3SiC 2 and SiC phases. The behaviors of SiC and Ti 3SiC 2 in the domain are described by the continuum damage mechanics (CDM) model reported in Nguyen et al., J. Nucl. Mater., 2017, 495:504–515. This CDM model describes microcracking damage in brittlemore » ceramics caused by thermomechanical loading and irradiation-induced swelling. The dual-phase microstructural model is applied to predict the microcracking mechanisms occurring in a typical Ti 3SiC 2/SiC joint subjected to heating to 800 °C followed by irradiation-induced swelling at this temperature and cooling to room temperature after the applied swelling has reached the maximum swelling levels observed in the experiments for SiC and Ti 3SiC 2. The model predicts minor damage of the joint after heating but significant microcracking in the SiC phase and along the boundaries between SiC and Ti 3SiC 2 as well as along the bonding joint during irradiation-induced swelling and cooling to room temperature. Our predictions qualitatively agree with the limited experimental observations of joint damage at this irradiation temperature.« less

A dual-phase microstructural approach to damage and fracture of Ti 3SiC 2/SiC joints

DOE Office of Scientific and Technical Information (OSTI.GOV)

Nguyen, Ba Nghiep; Henager, Charles H.; Kurtz, Richard J.

We investigate the microcracking mechanisms responsible for Ti 3SiC 2/SiC joint damage observed at the macroscopic scale after neutron irradiation experiments in detail. A dual-phase microstructural approach to damage and fracture of Ti 3SiC 2/SiC joints is developed that uses a finely discretized two-phase domain based on a digital image of an actual microstructure involving embedded Ti 3SiC 2 and SiC phases. The behaviors of SiC and Ti 3SiC 2 in the domain are described by the continuum damage mechanics (CDM) model reported in Nguyen et al., J. Nucl. Mater., 2017, 495:504–515. This CDM model describes microcracking damage in brittlemore » ceramics caused by thermomechanical loading and irradiation-induced swelling. The dual-phase microstructural model is applied to predict the microcracking mechanisms occurring in a typical Ti 3SiC 2/SiC joint subjected to heating to 800 °C followed by irradiation-induced swelling at this temperature and cooling to room temperature after the applied swelling has reached the maximum swelling levels observed in the experiments for SiC and Ti 3SiC 2. The model predicts minor damage of the joint after heating but significant microcracking in the SiC phase and along the boundaries between SiC and Ti 3SiC 2 as well as along the bonding joint during irradiation-induced swelling and cooling to room temperature. Our predictions qualitatively agree with the limited experimental observations of joint damage at this irradiation temperature.« less

A dual-phase microstructural approach to damage and fracture of Ti3SiC2/SiC joints

NASA Astrophysics Data System (ADS)

Nguyen, Ba Nghiep; Henager, Charles H.; Kurtz, Richard J.

2018-02-01

The microcracking mechanisms responsible for Ti3SiC2/SiC joint damage observed at the macroscopic scale after neutron irradiation experiments are investigated in detail. A dual-phase microstructural approach to damage and fracture of Ti3SiC2/SiC joints is developed that uses a finely discretized two-phase domain based on a digital image of an actual microstructure involving embedded Ti3SiC2 and SiC phases. The behaviors of SiC and Ti3SiC2 in the domain are described by the continuum damage mechanics (CDM) model reported in Nguyen et al., J. Nucl. Mater., 2017, 495:504-515. This CDM model describes microcracking damage in brittle ceramics caused by thermomechanical loading and irradiation-induced swelling. The dual-phase microstructural model is applied to predict the microcracking mechanisms occurring in a typical Ti3SiC2/SiC joint subjected to heating to 800 °C followed by irradiation-induced swelling at this temperature and cooling to room temperature after the applied swelling has reached the maximum swelling levels observed in the experiments for SiC and Ti3SiC2. The model predicts minor damage of the joint after heating but significant microcracking in the SiC phase and along the boundaries between SiC and Ti3SiC2 as well as along the bonding joint during irradiation-induced swelling and cooling to room temperature. These predictions qualitatively agree with the limited experimental observations of joint damage at this irradiation temperature.

SiC Optically Modulated Field-Effect Transistor

NASA Technical Reports Server (NTRS)

Tabib-Azar, Massood

2009-01-01

An optically modulated field-effect transistor (OFET) based on a silicon carbide junction field-effect transistor (JFET) is under study as, potentially, a prototype of devices that could be useful for detecting ultraviolet light. The SiC OFET is an experimental device that is one of several devices, including commercial and experimental photodiodes, that were initially evaluated as detectors of ultraviolet light from combustion and that could be incorporated into SiC integrated circuits to be designed to function as combustion sensors. The ultraviolet-detection sensitivity of the photodiodes was found to be less than desired, such that it would be necessary to process their outputs using high-gain amplification circuitry. On the other hand, in principle, the function of the OFET could be characterized as a combination of detection and amplification. In effect, its sensitivity could be considerably greater than that of a photodiode, such that the need for amplification external to the photodetector could be reduced or eliminated. The experimental SiC OFET was made by processes similar to JFET-fabrication processes developed at Glenn Research Center. The gate of the OFET is very long, wide, and thin, relative to the gates of typical prior SiC JFETs. Unlike in prior SiC FETs, the gate is almost completely transparent to near-ultraviolet and visible light. More specifically: The OFET includes a p+ gate layer less than 1/4 m thick, through which photons can be transported efficiently to the p+/p body interface. The gate is relatively long and wide (about 0.5 by 0.5 mm), such that holes generated at the body interface form a depletion layer that modulates the conductivity of the channel between the drain and the source. The exact physical mechanism of modulation of conductivity is a subject of continuing research. It is known that injection of minority charge carriers (in this case, holes) at the interface exerts a strong effect on the channel, resulting in amplification

Effect of high-temperature hydrogen exposure on sintered alpha-SiC

NASA Technical Reports Server (NTRS)

Hallum, Gary W.; Herbell, Thomas P.

1988-01-01

Sintered alpha-silicon carbide was exposed to pure, dry hydrogen at high temperatures for times up to 500 hr. Weight loss and corrosion were seen after 50 hr at temperatures as low as 1000 C. Corrosion of SiC by hydrogen produced grain boundary deterioration at 1100 C and a mixture of grain and grain boundary deterioration at 1300 C. Statistically significant strength reductions were seen in samples exposed to hydrogen for times greater than 50 hr and temperatures above 1100 C. Critical fracture origins were identified by fractography as either general grain boundary corrosion at 1100 C or as corrosion pits at 1300 C. A maximum strength decrease of approximately 33 percent was seen at 1100 and 1300 C after 500 hr exposure to hydrogen. A computer assisted thermodynamic program was also used to predict possible reaction species of SiC and hydrogen.

Development of Fe-based superconducting wires for liquid-hydrogen level sensors

NASA Astrophysics Data System (ADS)

Ishida, S.; Tsuchiya, Y.; Mawatari, Y.; Eisaki, H.; Nakano, A.; Yoshida, Y.

2017-07-01

We developed liquid-hydrogen (LH2) level sensors with Ba(Fe1-x Co x )2As2 superconducting wires (Co-Ba122 wires) as their detection elements. We fabricated Co-Ba122 wires with different Co concentrations x by using the powder-in-tube method. The superconducting transition temperatures of the wires were successfully controlled in the range of 20-25 K by changing x from 0.06 to 0.10. The resistance-temperature curves of the wires exhibited sharp superconducting transitions with widths of 0.5-1.0 K. In addition, we performed an operation test of the Co-Ba122 level sensors with LH2. Close correspondence between the output resistance and the actual LH2 level was observed for a sensor equipped with x = 0.09 wire, demonstrating that this sensor can accurately measure LH2 levels.

Hydrogen FBG sensor using Pd/Ag film with application in propulsion system fuel tank model of aerospace vehicle

NASA Astrophysics Data System (ADS)

Saad, Said; Hassine, Lotfi; Elfahem, Wassim

2014-09-01

The high efficiency hydrogen fiber Bragg grating (FBG) sensor is presented. The sensitive film was a new alliance of palladium-silver (Pd-Ag). In addition, the titanium (Ti) layer was used as the adhesive layer. The presented sensor showed the resolution of more than 60 pm/1% H2, and a fast response time of 4 s-5 s was guaranteed in the 0.1% H2-4% H2 range. Moreover, the life time of the sensor was investigated. The obtained results showed that the sensor had an enhanced life time. Furthermore, the sensor was applied in the propulsion system fuel tank model of the aerospace vehicle. The obtained results indicated that it is a prevention system against the disaster aerospace due to hydrogen leakage.

Amplifiers dedicated for large area SiC photodiodes

NASA Astrophysics Data System (ADS)

Doroz, P.; Duk, M.; Korwin-Pawlowski, M. L.; Borecki, M.

2016-09-01

Large area SiC photodiodes find applications in optoelectronic sensors working at special conditions. These conditions include detection of UV radiation in harsh environment. Moreover, the mentioned sensors have to be selective and resistant to unwanted signals. For this purpose, the modulation of light at source unit and the rejection of constant current and low frequency component of signal at detector unit are used. The popular frequency used for modulation in such sensor is 1kHz. The large area photodiodes are characterized by a large capacitance and low shunt resistance that varies with polarization of the photodiode and can significantly modify the conditions of signal pre-amplification. In this paper two pre-amplifiers topology are analyzed: the transimpedance amplifier and the non-inverting voltage to voltage amplifier with negative feedback. The feedback loops of both pre-amplifiers are equipped with elements used for initial constant current and low frequency signals rejections. Both circuits are analyzed and compared using simulation and experimental approaches.

A High Frequency (HF) Inductive Power Transfer Circuit for High Temperature Applications Using SiC Schottky Diodes

NASA Technical Reports Server (NTRS)

Jordan, Jennifer L.; Ponchak, George E.; Spry, David J.; Neudeck, Philip G.

2018-01-01

Wireless sensors placed in high temperature environments, such as aircraft engines, are desirable to reduce the mass and complexity of routing wires. While communication with the sensors is straight forward, providing power wirelessly is still a challenge. This paper introduces an inductive wireless power transfer circuit incorporating SiC Schottky diodes and its operation from room temperature (25 C) to 500 C.

Optimal base station placement for wireless sensor networks with successive interference cancellation.

PubMed

Shi, Lei; Zhang, Jianjun; Shi, Yi; Ding, Xu; Wei, Zhenchun

2015-01-14

We consider the base station placement problem for wireless sensor networks with successive interference cancellation (SIC) to improve throughput. We build a mathematical model for SIC. Although this model cannot be solved directly, it enables us to identify a necessary condition for SIC on distances from sensor nodes to the base station. Based on this relationship, we propose to divide the feasible region of the base station into small pieces and choose a point within each piece for base station placement. The point with the largest throughput is identified as the solution. The complexity of this algorithm is polynomial. Simulation results show that this algorithm can achieve about 25% improvement compared with the case that the base station is placed at the center of the network coverage area when using SIC.

Optimal Base Station Placement for Wireless Sensor Networks with Successive Interference Cancellation

PubMed Central

Shi, Lei; Zhang, Jianjun; Shi, Yi; Ding, Xu; Wei, Zhenchun

2015-01-01

We consider the base station placement problem for wireless sensor networks with successive interference cancellation (SIC) to improve throughput. We build a mathematical model for SIC. Although this model cannot be solved directly, it enables us to identify a necessary condition for SIC on distances from sensor nodes to the base station. Based on this relationship, we propose to divide the feasible region of the base station into small pieces and choose a point within each piece for base station placement. The point with the largest throughput is identified as the solution. The complexity of this algorithm is polynomial. Simulation results show that this algorithm can achieve about 25% improvement compared with the case that the base station is placed at the center of the network coverage area when using SIC. PMID:25594600

Optimization of KOH etching parameters for quantitative defect recognition in n- and p-type doped SiC

NASA Astrophysics Data System (ADS)

Sakwe, S. A.; Müller, R.; Wellmann, P. J.

2006-04-01

We have developed a KOH-based defect etching procedure for silicon carbide (SiC), which comprises in situ temperature measurement and control of melt composition. As benefit for the first time reproducible etching conditions were established (calibration plot, etching rate versus temperature and time); the etching procedure is time independent, i.e. no altering in KOH melt composition takes place, and absolute melt temperature values can be set. The paper describes this advanced KOH etching furnace, including the development of a new temperature sensor resistant to molten KOH. We present updated, absolute KOH etching parameters of n-type SiC and new absolute KOH etching parameters for low and highly p-type doped SiC, which are used for quantitative defect analysis. As best defect etching recipes we found T=530 °C/5 min (activation energy: 16.4 kcal/mol) and T=500 °C/5 min (activation energy: 13.5 kcal/mol) for n-type and p-type SiC, respectively.

Fabrication of All-SiC Fiber-Optic Pressure Sensors for High-Temperature Applications.

PubMed

Jiang, Yonggang; Li, Jian; Zhou, Zhiwen; Jiang, Xinggang; Zhang, Deyuan

2016-10-17

Single-crystal silicon carbide (SiC)-based pressure sensors can be used in harsh environments, as they exhibit stable mechanical and electrical properties at elevated temperatures. A fiber-optic pressure sensor with an all-SiC sensor head was fabricated and is herein proposed. SiC sensor diaphragms were fabricated via an ultrasonic vibration mill-grinding (UVMG) method, which resulted in a small grinding force and low surface roughness. The sensor head was formed by hermetically bonding two layers of SiC using a nickel diffusion bonding method. The pressure sensor illustrated a good linearity in the range of 0.1-0.9 MPa, with a resolution of 0.27% F.S. (full scale) at room temperature.

Characteristics of Commercial SiC and Synthetic SiC as an Aggregate in Geopolymer Composites

NASA Astrophysics Data System (ADS)

Irfanita, R.; Afifah, K. N.; Asrianti; Subaer

2017-03-01

This main objective of this study is to investigate the effect silicon carbide (SiC) as an aggregate on the mechanical strength and microstructure of the geopolymer composites. The geopolymers binder were produced by using alkaline activation method of metakaolin and cured at 70oC for 2 hours. In this study commercial and synthetic SiC were used as aggregate to produce composite structure. Synthetic SiC was produced from rice husk ash and coconut shell carbon calcined at 750oC for 2 hours. The addition of SiC in geopolymers paste was varied from 0.25g, 0.50g to 0.75g to form geopolymers composites. The chemical compositions and crystallinity level of SiC and the resulting composites were measured by means of Rigaku MiniFlexII X-Ray Diffraction (XRD). The microstructure of SiC and the composites were examined by using Tescan Vega3SB Scanning Electron Microscopy (SEM). The physical and mechanical properties of the samples were determined based on apparent porosity, bulk density, and three bending flexural strength measurements. The results showed that the commercial and synthetic SiC were effectively produced geopolymers composites with different microstructure, physical and mechanical strength.

Thermomechanical Performance of C and SiC Multilayer, Fiber-Reinforced, CVI SiC Matrix Composites

NASA Technical Reports Server (NTRS)

Morscher, Gregory N.; Singh, Mrityunjay

2004-01-01

Hybrid fiber approaches have been attempted in the past to alloy desirable properties of different fiber-types for mechanical properties, thermal stress management, and oxidation resistance. Such an approach has potential for the CrSiC and SiCrSiC composite systems. SiC matrix composites with different stacking sequences of woven C fiber (T300) layers and woven Sic fiber (Hi-NicalonTM) layers were fabricated using the standard CVI process. Delamination occurred to some extent due to thermal mismatch for all of the composites. However, for the composites with a more uniform stacking sequence, minimal delamination occurred, enabling tensile properties to be determined at room temperature and elevated temperatures (stress-rupture in air). Composites were seal-coated with a CVI SiC layer as well as a proprietary C-B-Si (CBS) layer. Definite improvement in rupture behavior was observed in air for composites with increasing SiC fiber content and a CBS layer. The results will be compared to standard C fiber reinforced CVI SiC matrix and Hi-Nicalon reinforced CVI SiC matrix composites.

Photoluminescence of etched SiC nanowires

NASA Astrophysics Data System (ADS)

Stewart, Polite D., Jr.; Rich, Ryan; Zerda, T. W.

2010-10-01

SiC nanowires were produced from carbon nanotubes and nanosize silicon powder in a tube furnace at temperatures between 1100^oC and 1350^oC. SiC nanowires had average diameter of 30 nm and very narrow size distribution. The compound possesses a high melting point, high thermal conductivity, and excellent wear resistance. The surface of the SiC nanowires after formation is covered by an amorphous layer. The composition of that layer is not fully understood, but it is believed that in addition to amorphous SiC it contains various carbon and silicon compounds, and SiO2. The objective of the research was to modify the surface structure of these SiC nanowires. Modification of the surface was done using the wet etching method. The etched nanowires were then analyzed using Fourier Transform Infrared spectroscopy (FTIR), transmission electron microscopy (TEM), and photoluminescence (PL). FTIR and TEM analysis provided valid proof that the SiC nanowires were successfully etched. Also, the PL results showed that the SiC nanowire core did possess a fluorescent signal.

Nanocrystalline SiC and Ti 3SiC 2 Alloys for Reactor Materials: Diffusion of Fission Product Surrogates

DOE Office of Scientific and Technical Information (OSTI.GOV)

Henager, Charles H.; Jiang, Weilin

2014-11-01

MAX phases, such as titanium silicon carbide (Ti 3SiC 2), have a unique combination of both metallic and ceramic properties, which make them attractive for potential nuclear applications. Ti 3SiC 2 has been suggested in the literature as a possible fuel cladding material. Prior to the application, it is necessary to investigate diffusivities of fission products in the ternary compound at elevated temperatures. This study attempts to obtain relevant data and make an initial assessment for Ti 3SiC 2. Ion implantation was used to introduce fission product surrogates (Ag and Cs) and a noble metal (Au) in Ti 3SiC 2,more » SiC, and a dual-phase nanocomposite of Ti 3SiC 2/SiC synthesized at PNNL. Thermal annealing and in-situ Rutherford backscattering spectrometry (RBS) were employed to study the diffusivity of the various implanted species in the materials. In-situ RBS study of Ti 3SiC 2 implanted with Au ions at various temperatures was also performed. The experimental results indicate that the implanted Ag in SiC is immobile up to the highest temperature (1273 K) applied in this study; in contrast, significant out-diffusion of both Ag and Au in MAX phase Ti 3SiC 2 occurs during ion implantation at 873 K. Cs in Ti 3SiC 2 is found to diffuse during post-irradiation annealing at 973 K, and noticeable Cs release from the sample is observed. This study may suggest caution in using Ti 3SiC 2 as a fuel cladding material for advanced nuclear reactors operating at very high temperatures. Further studies of the related materials are recommended.« less

Numerical Simulation of Temperature Sensor Self-Heating Effects in Gaseous and Liquid Hydrogen Under Cryogenic Conditions

NASA Astrophysics Data System (ADS)

Langebach, R.; Haberstroh, Ch.

2010-04-01

In this paper a numerical investigation is presented that characterizes the free convective flow field and the resulting heat transfer mechanisms for a resistance temperature sensor in liquid and gaseous hydrogen at various cryogenic conditions. Motivation for this is the detection of stratification effects e.g. inside a liquid hydrogen storage vessel. In this case, the local temperature measurement in still resting fluid requires a very high standard of precision despite an extremely poor thermal anchoring of the sensor. Due to electrical power dissipation a certain amount of heat has to be transferred from sensor to fluid. This can cause relevant measurement errors due to a slightly elevated sensor temperature. A commercial CFD code was employed to calculate the heat and mass transfer around the typical sensor geometry. The results were compared with existing heat transfer correlations from the literature. As a result the magnitude of averaged heat transfer coefficients and sensor over-heating as a function of power dissipation are given in figures. From the gained numerical results a new correlation for the averaged Nusselt Number is presented that represents very low Rayleigh Number flows. The correlation can be used to estimate sensor self-heating effects in similar situations.

A titania nanotube-array room-temperature sensor for selective detection of hydrogen at low concentrations.

PubMed

Varghese, Oomman K; Mor, Gopal K; Grimes, Craig A; Paulose, Maggie; Mukherjee, Niloy

2004-09-01

A tremendous variation in electrical resistance, from the semiconductor to metallic range, has been observed in titania nanotube arrays at room temperature, approximately 25 degrees C, in the presence of < or = 1000 ppm hydrogen gas. The nanotube arrays are fabricated by anodizing titanium foil in an aqueous electrolyte solution containing hydrofluoric acid and acetic acid. Subsequently, the arrays are coated with a 10 nm layer of palladium by evaporation. Electrical contacts are made by sputtering a 2 mm diameter platinum disk atop the Pd-coated nanotube array. These sensors exhibit a resistance variation of the order of 10(4) in the presence of 100 ppm hydrogen at 25 degrees C. The sensors demonstrate complete reversibility, repeatability, high selectivity, negligible drift and wide dynamic range. The nanoscale geometry of the nanotubes, in particular the points of tube-to-tube contact, is believed to be responsible for the outstanding hydrogen gas sensitivities.

High-Sensitivity and Low-Power Flexible Schottky Hydrogen Sensor Based on Silicon Nanomembrane.

PubMed

Cho, Minkyu; Yun, Jeonghoon; Kwon, Donguk; Kim, Kyuyoung; Park, Inkyu

2018-04-18

High-performance and low-power flexible Schottky diode-based hydrogen sensor was developed. The sensor was fabricated by releasing Si nanomembrane (SiNM) and transferring onto a plastic substrate. After the transfer, palladium (Pd) and aluminum (Al) were selectively deposited as a sensing material and an electrode, respectively. The top-down fabrication process of flexible Pd/SiNM diode H 2 sensor is facile compared to other existing bottom-up fabricated flexible gas sensors while showing excellent H 2 sensitivity (Δ I/ I 0 > 700-0.5% H 2 concentrations) and fast response time (τ 10-90 = 22 s) at room temperature. In addition, selectivity, humidity, and mechanical tests verify that the sensor has excellent reliability and robustness under various environments. The operating power consumption of the sensor is only in the nanowatt range, which indicates its potential applications in low-power portable and wearable electronics.

Fabrication of All-SiC Fiber-Optic Pressure Sensors for High-Temperature Applications

PubMed Central

Jiang, Yonggang; Li, Jian; Zhou, Zhiwen; Jiang, Xinggang; Zhang, Deyuan

2016-01-01

Single-crystal silicon carbide (SiC)-based pressure sensors can be used in harsh environments, as they exhibit stable mechanical and electrical properties at elevated temperatures. A fiber-optic pressure sensor with an all-SiC sensor head was fabricated and is herein proposed. SiC sensor diaphragms were fabricated via an ultrasonic vibration mill-grinding (UVMG) method, which resulted in a small grinding force and low surface roughness. The sensor head was formed by hermetically bonding two layers of SiC using a nickel diffusion bonding method. The pressure sensor illustrated a good linearity in the range of 0.1–0.9 MPa, with a resolution of 0.27% F.S. (full scale) at room temperature. PMID:27763494

Hydrogen Sensors Using Nitride-Based Semiconductor Diodes: The Role of Metal/Semiconductor Interfaces

PubMed Central

Irokawa, Yoshihiro

2011-01-01

In this paper, I review my recent results in investigating hydrogen sensors using nitride-based semiconductor diodes, focusing on the interaction mechanism of hydrogen with the devices. Firstly, effects of interfacial modification in the devices on hydrogen detection sensitivity are discussed. Surface defects of GaN under Schottky electrodes do not play a critical role in hydrogen sensing characteristics. However, dielectric layers inserted in metal/semiconductor interfaces are found to cause dramatic changes in hydrogen sensing performance, implying that chemical selectivity to hydrogen could be realized. The capacitance-voltage (C–V) characteristics reveal that the work function change in the Schottky metal is not responsible mechanism for hydrogen sensitivity. The interface between the metal and the semiconductor plays a critical role in the interaction of hydrogen with semiconductor devises. Secondly, low-frequency C–V characterization is employed to investigate the interaction mechanism of hydrogen with diodes. As a result, it is suggested that the formation of a metal/semiconductor interfacial polarization could be attributed to hydrogen-related dipoles. In addition, using low-frequency C–V characterization leads to clear detection of 100 ppm hydrogen even at room temperature where it is hard to detect hydrogen by using conventional current-voltage (I–V) characterization, suggesting that low-frequency C–V method would be effective in detecting very low hydrogen concentrations. PMID:22346597

Experimental study of temperature sensor for an ocean-going liquid hydrogen (LH2) carrier

NASA Astrophysics Data System (ADS)

Nakano, A.; Shimazaki, T.; Sekiya, M.; Shiozawa, H.; Aoyagi, A.; Ohtsuka, K.; Iwakiri, T.; Mikami, Z.; Sato, M.; Kinoshita, K.; Matsuoka, T.; Takayama, Y.; Yamamoto, K.

2018-04-01

The prototype temperature sensors for an ocean-going liquid hydrogen (LH2) carrier were manufactured by way of trial. All of the sensors adopted Platinum 1000 (PT-1000) resistance thermometer elements. Various configurations of preproduction temperature sensors were tested in AIST's LH2 test facility. In the experiments, a PT-1000 resistance thermometer, calibrated at the National Metrology Institute of Japan at AIST, was used as the standard thermometer. The temperatures measured by the preproduction sensors were compared with the temperatures measured by the standard thermometer, and the measurement accuracy of the temperature sensors in LH2 was investigated and discussed. It was confirmed that the measurement accuracies of the preproduction temperature sensors were within ±50 mK, which is the required measurement accuracy for a technical demonstration ocean-going LH2 carrier.

Oxidation of SiC

NASA Astrophysics Data System (ADS)

Cooper, James A.

1997-03-01

SiC is a wide band gap hexagonal anisotropic semiconductor which is attractive for use in high voltage, high temperature, or high power applications. SiC is also the only compound semiconductor that can be thermally oxidized to form SiO_2, making it possible to construct many conventional MOS devices in this material. The electrical quality of the SiO_2/SiC interface is far from ideal, however, and considerable research is presently directed to understanding and improving this interface. Electrical characterization of the SiC MOS interface is complicated by the wide band gap, since most interface states are energetically too far removed from the conduction or valence bands to respond to electrical stimulation at room temperature. Moreover, very little information is yet available on the properties of the MOS interface on the 4H polytype of SiC (preferred because of it's higher bulk electron mobility) or on interfaces on crystalline surfaces perpendicular to the basal plane (where an equal number of Si and C atoms are present). Finally, electron mobilities in inversion layers on 4H-SiC reported to date are anomolously low, especially in consideration of the relatively high bulk mobilities in this polytype. In this talk we will discuss MOS characterization techniques for wide band gap semiconductors and review the current understanding of the physics of the MOS interface on thermally oxidized SiC.

Perovskite-type oxide thin film integrated fiber optic sensor for high-temperature hydrogen measurement.

PubMed

Tang, Xiling; Remmel, Kurtis; Lan, Xinwei; Deng, Jiangdong; Xiao, Hai; Dong, Junhang

2009-09-15

Small size fiber optic devices integrated with chemically sensitive photonic materials are emerging as a new class of high-performance optical chemical sensor that have the potential to meet many analytical challenges in future clean energy systems and environmental management. Here, we report the integration of a proton conducting perovskite oxide thin film with a long-period fiber grating (LPFG) device for high-temperature in situ measurement of bulk hydrogen in fossil- and biomass-derived syngas. The perovskite-type Sr(Ce(0.8)Zr(0.1))Y(0.1)O(2.95) (SCZY) nanocrystalline thin film is coated on the 125 microm diameter LPFG by a facile polymeric precursor route. This fiber optic sensor (FOS) operates by monitoring the LPFG resonant wavelength (lambda(R)), which is a function of the refractive index of the perovskite oxide overcoat. At high temperature, the types and population of the ionic and electronic defects in the SCZY structure depend on the surrounding hydrogen partial pressure. Thus, varying the H(2) concentration changes the SCZY film refractive index and light absorbing characteristics that in turn shifts the lambda(R) of the LPFG. The SCZY-coated LPFG sensor has been demonstrated for bulk hydrogen measurement at 500 degrees C for its sensitivity, stability/reversibility, and H(2)-selectivity over other relevant small gases including CO, CH(4), CO(2), H(2)O, and H(2)S, etc.

Development of a Prototype Optical Hydrogen Gas Sensor Using a Getter-Doped Polymer Transducer for Monitoring Cumulative Exposure: Preliminary Results

DOE Office of Scientific and Technical Information (OSTI.GOV)

Small IV, W; Maitland, D J; Wilson, T S

2008-06-05

A novel prototype optical sensor for monitoring cumulative hydrogen gas exposure was fabricated and evaluated. Chemical-to-optical transduction was accomplished by detecting the intensity of 670 nm laser light transmitted through a hydrogen getter-doped polymer film mounted at the end of an optical fiber; the transmittance of the composite film increased with uptake of hydrogen by the embedded getter. The composite film consisted of the hydrogen getter 1,4-bis(phenylethynyl)benzene, also known as DEB, with carbon-supported palladium catalyst embedded in silicone elastomer. Because the change in transmittance was irreversible and occurred continuously as the getter captured hydrogen, the sensor behaved like a dosimeter,more » providing a unique indication of the cumulative gas exposure.« less

New generation of α-MnO2 nanowires @PDMS composite as a hydrogen gas sensor

NASA Astrophysics Data System (ADS)

Hamidi, Seyedeh Mehri; Mosivand, Alireza; Mahboubi, Mina; Arabi, Hadi; Azad, Narin; Jamal, Murtada Riyadh

2018-03-01

New hydrogen gas sensor has been prepared by α-MnO2 nanowires in polydimethylsiloxane matrix. For this purpose, the high aspect ratio α-MnO2 nanowires has been prepared by the aid of hydrothermal method and then dispersed into poly-dimethyl siloxane polymer media. For gas sensing, the samples have been exposed under different gas concentrations from 0 to 5%. The sensor responses have been examined by normalized ellipsometric parameter with respect to the chamber filled with N2 Gas. Our results indicate linear behavior of resonance wavelength in ellipsometric parameter as a function of gas concentrations which can open a new insight for the sample's capability to hydrogen gas sensing applications.

Erosion and strength degradation of biomorphic SiC.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Martinez-Fernandez, J.; de Arellano-Lopez, A. R; Varela-Feria, F. M.

2004-05-01

Solid-particle-erosion studies were conducted on biomorphic SiC based on eucalyptus and pine, reaction-bonded (RB) SiC, and hot-pressed (HP) SiC. The erodents were angular SiC abrasives of average diameter 63, 143, or 390 {mu}m and the impact velocity was 100 m s{sup -1}. Impact occurred at normal incidence. Material loss in all targets occurred by brittle fracture. The biomorphic specimens eroded by formation of both lateral and radial cracks and their erosion rates were higher than both conventional SiCs. The RB SiC eroded as a classic brittle material, by formation and propagation of lateral cracks. The HP SiC, the hardest target,more » was the most erosion resistant. In erosion of the HP SiC, the abrasive particles, especially the largest ones, fragmented upon impact. The resulting dissipation of energy led to relatively low erosion rates. Flexural strength before and after erosion was measured for the biomorphic eucalyptus, RB SiC, and HP SiC. Erosion damage reduced the flexural strengths of all of the specimens. The relative strength reductions were lowest for the biomorphic eucalyptus and highest for the HP SiC. The hot-pressed SiC responded as predicted by accepted models of impact damage in brittle solids. The responses of the biomorphic and reaction-bonded SiC specimens were modeled as if they consisted of only SiC and porosity. This approximation agreed reasonably well with observed degradations of strength.« less

Quantification Of 4H- To 3C-Polymorphism In Silicon Carbide (SiC) Epilayers And An Investigation Of Recombination-Enhanced Dislocation Motion In SiC By Optical Emission Microscopy (Oem) Techniques

NASA Technical Reports Server (NTRS)

Speer, Kevin M.

2004-01-01

Environments that impose operational constraints on conventional silicon-(Si) based semiconductor devices frequently appear in military- and space-grade applications. These constraints include high temperature, high power, and high radiation environments. Silicon carbide (SiC), an alternative type of semiconductor material, has received abundant research attention in the past few years, owing to its radiation-hardened properties as well as its capability to withstand high temperatures and power levels. However, the growth and manufacture of SiC devices is still comparatively immature, and there are severe limitations in present crystal growth and device fabrication processes. Among these limitations is a variety of crystal imperfections known as defects. These imperfections can be point defects (e.g., vacancies and interstitials), line defects (e.g., edge and screw dislocations), or planar defects (e.g., stacking faults and double-positioning boundaries). All of these defects have been experimentally shown to be detrimental to the performance of electron devices made from SiC. As such, it is imperative that these defects are significantly reduced in order for SiC devices to become a viable entity in the electronics world. The NASA Glenn High Temperature Integrated Electronics & Sensors Team (HTIES) is working to identify and eliminate these defects in SiC by implementing improved epitaxial crystal growth procedures. HTIES takes two-inch SiC wafers and etches patterns, producing thousands of mesas into each wafer. Crystal growth is then carried out on top of these mesas in an effort to produce films of improved quality-resulting in electron devices that demonstrate superior performance-as well as fabrication processes that are cost-effective, reliable, and reproducible. In this work, further steps are taken to automate HTIES' SiC wafer inspection system. National Instruments LabVIEW image processing and pattern recognition routines are developed that are capable of

Development of a Hydrogen Peroxide Sensor Based on Screen-Printed Electrodes Modified with Inkjet-Printed Prussian Blue Nanoparticles

PubMed Central

Cinti, Stefano; Arduini, Fabiana; Moscone, Danila; Palleschi, Giuseppe; Killard, Anthony J.

2014-01-01

A sensor for the simple and sensitive measurement of hydrogen peroxide has been developed which is based on screen printed electrodes (SPEs) modified with Prussian blue nanoparticles (PBNPs) deposited using piezoelectric inkjet printing. PBNP-modified SPEs were characterized using physical and electrochemical techniques to optimize the PBNP layer thickness and electroanalytical conditions for optimum measurement of hydrogen peroxide. Sensor optimization resulted in a limit of detection of 2 × 10−7 M, a linear range from 0 to 4.5 mM and a sensitivity of 762 μA·mM−1·cm−2 which was achieved using 20 layers of printed PBNPs. Sensors also demonstrated excellent reproducibility (<5% rsd). PMID:25093348

Investigation of a para-ortho hydrogen reactor for application to spacecraft sensor cooling

NASA Technical Reports Server (NTRS)

Nast, T. C.

1983-01-01

The utilization of solid hydrogen in space for sensor and instrument cooling is a very efficient technique for long term cooling or for cooling at high heat rates. The solid hydrogen can provide temperatures as low as 7 to 8 K to instruments. Vapor cooling is utilized to reduce parasitic heat inputs to the 7 to 8 K stage and is effective in providing intermediate cooling for instrument components operating at higher temperatures. The use of solid hydrogen in place of helium may lead to weight reductions as large as a factor of ten and an attendent reduction in system volume. The results of an investigation of a catalytic reactor for use with a solid hydrogen cooling system is presented. Trade studies were performed on several configurations of reactor to meet the requirements of high reactor efficiency with low pressure drop. Results for the selected reactor design are presented for both liquid hydrogen systems operating at near atmospheric pressure and the solid hydrogen cooler operating as low as 1 torr.

Fluidic hydrogen detector production prototype development

NASA Technical Reports Server (NTRS)

Roe, G. W.; Wright, R. E.

1976-01-01

A hydrogen gas sensor that can replace catalytic combustion sensors used to detect leaks in the liquid hydrogen transfer systems at Kennedy Space Center was developed. A fluidic sensor concept, based on the principle that the frequency of a fluidic oscillator is proportional to the square root of the molecular weight of its operating fluid, was utilized. To minimize sensitivity to pressure and temperature fluctuations, and to make the sensor specific for hydrogen, two oscillators are used. One oscillator operates on sample gas containing hydrogen, while the other operates on sample gas with the hydrogen converted to steam. The conversion is accomplished with a small catalytic converter. The frequency difference is taken, and the hydrogen concentration computed with a simple digital processing circuit. The output from the sensor is an analog signal proportional to hydrogen content. The sensor is shown to be accurate and insensitive to severe environmental disturbances. It is also specific for hydrogen, even with large helium concentrations in the sample gas.

Fiber optic hydrogen sensor

DOEpatents

Buchanan, B.R.; Prather, W.S.

1991-01-01

Apparatus and method for detecting a chemical substance by exposing an optic fiber having a core and a cladding to the chemical substance so that the chemical substance can be adsorbed onto the surface of the cladding. The optic fiber is coiled inside a container having a pair of valves for controlling the entrance and exit of the substance. Light from a light source is received by one end of the optic fiber, preferably external to the container, and carried by the core of the fiber. Adsorbed substance changes the transmissivity of the fiber as measured by a spectrophotometer at the other end, also preferably external to the container. Hydrogen is detected by the absorption of infrared light carried by an optic fiber with a silica cladding. Since the adsorption is reversible, a sensor according to the present invention can be used repeatedly. Multiple positions in a process system can be monitored using a single container that can be connected to each location to be monitored so that a sample can be obtained for measurement, or, alternatively, containers can be placed near each position and the optic fibers carrying the partially-absorbed light can be multiplexed for rapid sequential reading, by a single spectrophotometer.

Fiber optic hydrogen sensor

DOEpatents

Buchanan, B.R.; Prather, W.S.

1992-10-06

An apparatus and method are described for detecting a chemical substance by exposing an optic fiber having a core and a cladding to the chemical substance so that the chemical substance can be adsorbed onto the surface of the cladding. The optic fiber is coiled inside a container having a pair of valves for controlling the entrance and exit of the substance. Light from a light source is received by one end of the optic fiber, preferably external to the container, and carried by the core of the fiber. Adsorbed substance changes the transmissivity of the fiber as measured by a spectrophotometer at the other end, also preferably external to the container. Hydrogen is detected by the absorption of infrared light carried by an optic fiber with a silica cladding. Since the adsorption is reversible, a sensor according to the present invention can be used repeatedly. Multiple positions in a process system can be monitored using a single container that can be connected to each location to be monitored so that a sample can be obtained for measurement, or, alternatively, containers can be placed near each position and the optic fibers carrying the partially-absorbed light can be multiplexed for rapid sequential reading by a single spectrophotometer. 4 figs.

Fiber optic hydrogen sensor

DOEpatents

Buchanan, Bruce R.; Prather, William S.

1992-01-01

An apparatus and method for detecting a chemical substance by exposing an optic fiber having a core and a cladding to the chemical substance so that the chemical substance can be adsorbed onto the surface of the cladding. The optic fiber is coiled inside a container having a pair of valves for controlling the entrance and exit of the substance. Light from a light source is received by one end of the optic fiber, preferably external to the container, and carried by the core of the fiber. Adsorbed substance changes the transmissivity of the fiber as measured by a spectrophotometer at the other end, also preferably external to the container. Hydrogen is detected by the absorption of infrared light carried by an optic fiber with a silica cladding. Since the adsorption is reversible, a sensor according to the present invention can be used repeatedly. Multiple positions in a process system can be monitored using a single container that can be connected to each location to be monitored so that a sample can be obtained for measurement, or, alternatively, containers can be placed near each position and the optic fibers carrying the partially-absorbed light can be multiplexed for rapid sequential reading by a single spectrophotometer.

Fast neutron detection at near-core location of a research reactor with a SiC detector

NASA Astrophysics Data System (ADS)

Wang, Lei; Jarrell, Josh; Xue, Sha; Tan, Chuting; Blue, Thomas; Cao, Lei R.

2018-04-01

The measurable charged-particle produced from the fast neutron interactions with the Si and C nucleuses can make a wide bandgap silicon carbide (SiC) sensor intrinsically sensitive to neutrons. The 4H-SiC Schottky detectors have been fabricated and tested at up to 500 °C, presenting only a slightly degraded energy resolution. The response spectrum of the SiC detectors were also obtained by exposing the detectors to external neutron beam irradiation and at a near-core location where gamma-ray field is intense. The fast neutron flux of these two locations are ∼ 4 . 8 × 104cm-2 ṡs-1 and ∼ 2 . 2 × 107cm-2 ṡs-1, respectively. At the external beam location, a Si detector was irradiated side-by-side with SiC detector to disjoin the neutron response from Si atoms. The contribution of gamma ray, neutron scattering, and charged-particles producing reactions in the SiC was discussed. The fast neutron detection efficiencies were determined to be 6 . 43 × 10-4 for the external fast neutron beam irradiation and 6 . 13 × 10-6 for the near-core fast neutron irradiation.

Abundance of SiC2 in carbon star envelopes

NASA Astrophysics Data System (ADS)

Massalkhi, S.; Agúndez, M.; Cernicharo, J.; Velilla Prieto, L.; Goicoechea, J. R.; Quintana-Lacaci, G.; Fonfría, J. P.; Alcolea, J.; Bujarrabal, V.

2018-03-01

Context. Silicon carbide dust is ubiquitous in circumstellar envelopes around C-rich asymptotic giant branch (AGB) stars. However, the main gas-phase precursors leading to the formation of SiC dust have not yet been identified. The most obvious candidates among the molecules containing an Si-C bond detected in C-rich AGB stars are SiC2, SiC, and Si2C. To date, the ring molecule SiC2 has been observed in a handful of evolved stars, while SiC and Si2C have only been detected in the C-star envelope IRC +10216. Aim. We aim to study how widespread and abundant SiC2, SiC, and Si2C are in envelopes around C-rich AGB stars, and whether or not these species play an active role as gas-phase precursors of silicon carbide dust in the ejecta of carbon stars. Methods: We carried out sensitive observations with the IRAM 30 m telescope of a sample of 25 C-rich AGB stars to search for emission lines of SiC2, SiC, and Si2C in the λ 2 mm band. We performed non-LTE excitation and radiative transfer calculations based on the LVG method to model the observed lines of SiC2 and to derive SiC2 fractional abundances in the observed envelopes. Results: We detect SiC2 in most of the sources, SiC in about half of them, and do not detect Si2C in any source except IRC +10216. Most of these detections are reported for the first time in this work. We find a positive correlation between the SiC and SiC2 line emission, which suggests that both species are chemically linked; the SiC radical is probably the photodissociation product of SiC2 in the external layer of the envelope. We find a clear trend where the denser the envelope, the less abundant SiC2 is. The observed trend is interpreted as evidence of efficient incorporation of SiC2 onto dust grains, a process that is favored at high densities owing to the higher rate at which collisions between particles take place. Conclusions: The observed behavior of a decline in the SiC2 abundance with increasing density strongly suggests that SiC2 is an

The Different Sensitive Behaviors of a Hydrogen-Bond Acidic Polymer-Coated SAW Sensor for Chemical Warfare Agents and Their Simulants

PubMed Central

Long, Yin; Wang, Yang; Du, Xiaosong; Cheng, Luhua; Wu, Penglin; Jiang, Yadong

2015-01-01

A linear hydrogen-bond acidic (HBA) linear functionalized polymer (PLF), was deposited onto a bare surface acoustic wave (SAW) device to fabricate a chemical sensor. Real-time responses of the sensor to a series of compounds including sarin (GB), dimethyl methylphosphonate (DMMP), mustard gas (HD), chloroethyl ethyl sulphide (2-CEES), 1,5-dichloropentane (DCP) and some organic solvents were studied. The results show that the sensor is highly sensitive to GB and DMMP, and has low sensitivity to HD and DCP, as expected. However, the sensor possesses an unexpected high sensitivity toward 2-CEES. This good sensing performance can’t be solely or mainly attributed to the dipole-dipole interaction since the sensor is not sensitive to some high polarity solvents. We believe the lone pair electrons around the sulphur atom of 2-CEES provide an electron-rich site, which facilitates the formation of hydrogen bonding between PLF and 2-CEES. On the contrary, the electron cloud on the sulphur atom of the HD molecule is offset or depleted by its two neighbouring strong electron-withdrawing groups, hence, hydrogen bonding can hardly be formed. PMID:26225975

Investigation of hydrogen sulfide gas using Pd/Pt material based fiber Bragg grating sensor

NASA Astrophysics Data System (ADS)

Bedi, Amna; Rao, Dusari Nageswara; Kumar, Santosh

2018-02-01

In this work, Pd/Pt material based fiber Bragg grating (FBG) sensors has been proposed for detection of hydrogen sulfide gas. Here, characteristics of FBG parameters were numerically calculated and simulated. The variation in reflectivity based on refractive index has been shown. The reflectivity of FBG can be varied when refractive index is changed. The proposed sensor works on very low concentration i.e., 0% to 1%, which has the capability to detect in the early stage.

Porous silicon carbide (SiC) semiconductor device

NASA Technical Reports Server (NTRS)

Shor, Joseph S. (Inventor); Kurtz, Anthony D. (Inventor)

1994-01-01

A semiconductor device employs at least one layer of semiconducting porous silicon carbide (SiC). The porous SiC layer has a monocrystalline structure wherein the pore sizes, shapes, and spacing are determined by the processing conditions. In one embodiment, the semiconductor device is a p-n junction diode in which a layer of n-type SiC is positioned on a p-type layer of SiC, with the p-type layer positioned on a layer of silicon dioxide. Because of the UV luminescent properties of the semiconducting porous SiC layer, it may also be utilized for other devices such as LEDs and optoelectronic devices.

Improved Sensitivity with Low Limit of Detection of a Hydrogen Gas Sensor Based on rGO-Loaded Ni-Doped ZnO Nanostructures.

PubMed

Bhati, Vijendra Singh; Ranwa, Sapana; Rajamani, Saravanan; Kumari, Kusum; Raliya, Ramesh; Biswas, Pratim; Kumar, Mahesh

2018-04-04

We report enhanced hydrogen-gas-sensing performance of a Ni-doped ZnO sensor decorated with the optimum concentration of reduced graphene oxide (rGO). Ni-doped ZnO nanoplates were grown by radio frequency sputtering, rGO was synthesized by Hummer's method and decorated by the drop cast method of various concentration of rGO (0-1.5 wt %). The current-voltage characteristics of the rGO-loaded sensor are highly influenced by the loading concentration of rGO, where current conduction decreases and sensor resistance increases as the rGO concentration is increased up to 0.75 wt % because of the formation of various Schottky heterojunctions at rGO/ZnO interfaces. With the combined effect of more active site availability and formation of various p-n heterojunctions due to the optimum loading concentration of rGO (0.75 wt %), the sensor shows the maximum sensing response of ∼63.8% for 100 ppm hydrogen at moderate operating temperature (150 °C). The rGO-loaded sensors were able to detect a minimum of 1 ppm hydrogen concentration and showed high selectivity. However, a further increase in the rGO concentration (1.5 wt %) leads to the reduction of the relative response of hydrogen gas, ascribed to the formation of interconnections of rGO between electrodes. Therefore, it reduces the total resistance of the sensor and minimizes the effect of p-n heterojunction on sensor response.

Extreme-Environment Silicon-Carbide (SiC) Wireless Sensor Suite

NASA Technical Reports Server (NTRS)

Yang, Jie

2015-01-01

Phase II objectives: Develop an integrated silicon-carbide wireless sensor suite capable of in situ measurements of critical characteristics of NTP engine; Compose silicon-carbide wireless sensor suite of: Extreme-environment sensors center, Dedicated high-temperature (450 deg C) silicon-carbide electronics that provide power and signal conditioning capabilities as well as radio frequency modulation and wireless data transmission capabilities center, An onboard energy harvesting system as a power source.

Benzene Adsorption on C24, Si@C24, Si-Doped C24, and C20 Fullerenes

NASA Astrophysics Data System (ADS)

Baei, Mohammad T.

2017-12-01

The absorption feasibility of benzene molecule in the C24, Si@C24, Si-doped C24, and C20 fullerenes has been studied based on calculated electronic properties of these fullerenes using Density functional Theory (DFT). It is found that energy of benzene adsorption on C24, Si@C24, and Si-doped C24 fullerenes were in range of -2.93 and -51.19 kJ/mol with little changes in their electronic structure. The results demonstrated that the C24, Si@C24, and Si-doped C24 fullerenes cannot be employed as a chemical adsorbent or sensor for benzene. Silicon doping cannot significantly modify both the electronic properties and benzene adsorption energy of C24 fullerene. On the other hand, C20 fullerene exhibits a high sensitivity, so that the energy gap of the fullerene is changed almost 89.19% after the adsorption process. We concluded that the C20 fullerene can be employed as a reliable material for benzene detection.

Nanoparticle-based electrochemical sensors for the detection of lactate and hydrogen peroxide

NASA Astrophysics Data System (ADS)

Uzunoglu, Aytekin

In the present study, electrochemical sensors for the detection of lactate and hydrogen peroxide were constructed by exploiting the physicochemical properties of metal ad metal oxide nanoparticles. This study can be divided into two main sections. While chapter 2, 3, and 4 report on the construction of electrochemical lactate biosensors using CeO2 and CeO2-based mixed metal oxide nanoparticles, chapter 5 and 6 show the development of electrochemical hydrogen peroxide sensors by the decoration of the electrode surface with palladium-based nanoparticles. First generation oxidase enzyme-based sensors suffer from oxygen dependency which results in errors in the response current of the sensors in O2-lean environments. To address this challenge, the surface of the sensors must be modified with oxygen rich materials. In this regard, we developed a novel electrochemical lactate biosensor design by exploiting the oxygen storage capacity of CeO2 and CeO 2-CuO nanoparticles. By the introduction of CeO2 nanoparticles into the enzyme layer of the sensors, negative interference effect of ascorbate which resulted from the formation of oxygen-lean regions was eliminated successfully. When CeO2-based design was exposed to higher degree of O2 -depleted environments, however, the response current of the biosensors experienced an almost 21 % decrease, showing that the OSC of CeO2 was not high enough to sustain the enzymatic reactions. When CeO2-CuO nanoparticles, which have 5 times higher OSC than pristine CeO2, were used as an oxygen supply in the enzyme layer, the biosensors did not show any drop in the performance when moving from oxygen-rich to oxygen-lean conditions. In the second part of the study, PdCu/SPCE and PdAg/rGO-based electrochemical H2O2 sensors were designed and their performances were evaluated to determine their sensitivity, linear range, detection limit, and storage stability. In addition, practical applicability of the sensors was studied in human serum. The

Water and hydrogen are immiscible in Earth's mantle.

PubMed

Bali, Enikő; Audétat, Andreas; Keppler, Hans

2013-03-14

In the deep, chemically reducing parts of Earth's mantle, hydrous fluids contain significant amounts of molecular hydrogen (H2). Thermodynamic models of fluids in Earth's mantle so far have always assumed that molecular hydrogen and water are completely miscible. Here we show experimental evidence that water and hydrogen can coexist as two separate, immiscible phases. Immiscibility between water and hydrogen may be the cause of the formation of enigmatic, ultra-reducing domains in the mantle that contain moissanite (SiC) and other phases indicative of extremely reducing conditions. Moreover, the immiscibility between water and hydrogen may provide a mechanism for the rapid oxidation of Earth's upper mantle immediately following core formation.

Alkali (Li, K and Na) and alkali-earth (Be, Ca and Mg) adatoms on SiC single layer

NASA Astrophysics Data System (ADS)

Baierle, Rogério J.; Rupp, Caroline J.; Anversa, Jonas

2018-03-01

First-principles calculations within the density functional theory (DFT) have been addressed to study the energetic stability, and electronic properties of alkali and alkali-earth atoms adsorbed on a silicon carbide (SiC) single layer. We observe that all atoms are most stable (higher binding energy) on the top of a Si atom, which moves out of the plane (in the opposite direction to the adsorbed atom). Alkali atoms adsorbed give raise to two spin unpaired electronic levels inside the band gap leading the SiC single layer to exhibit n-type semiconductor properties. For alkaline atoms adsorbed there is a deep occupied spin paired electronic level inside the band gap. These finding suggest that the adsorption of alkaline and alkali-earth atoms on SiC layer is a powerful feature to functionalize two dimensional SiC structures, which can be used to produce new electronic, magnetic and optical devices as well for hydrogen and oxygen evolution reaction (HER and OER, respectively). Furthermore, we observe that the adsorption of H2 is ruled by dispersive forces (van der Waals interactions) while the O2 molecule is strongly adsorbed on the functionalized system.

Properties of Hydrogen Sulfide Sensors Based on Thin Films of Tin Dioxide and Tungsten Trioxide

NASA Astrophysics Data System (ADS)

Sevastianov, E. Yu.; Maksimova, N. K.; Chernikov, E. V.; Sergeichenko, N. V.; Rudov, F. V.

2016-12-01

The effect of hydrogen sulfide in the concentration range of 0-100 ppm on the characteristics of thin films of tin dioxide and tungsten trioxide obtained by the methods of magnetron deposition and modified with gold in the bulk and on the surface is studied. The impurities of antimony and nickel have been additionally introduced into the SnO2 bulk. An optimal operating temperature of sensors 350°C was determined, at which there is a satisfactory correlation between the values of the response to H2S and the response time. Degradation of the sensor characteristics is investigated in the long-term ( 0.5-1.5 years) tests at operating temperature and periodic exposure to hydrogen sulfide, as well as after conservation of samples in the laboratory air. It is shown that for the fabrication of H2S sensors, the most promising are thin nanocrystalline Au/WO3:Au films characterized by a linear concentration dependence of the response and high stability of parameters during exploitation.

Smart Sensor Systems for Aerospace Applications: From Sensor Development to Application Testing

NASA Technical Reports Server (NTRS)

Hunter, G. W.; Xu, J. C.; Dungan, L. K.; Ward, B. J.; Rowe, S.; Williams, J.; Makel, D. B.; Liu, C. C.; Chang, C. W.

2008-01-01

The application of Smart Sensor Systems for aerospace applications is a multidisciplinary process consisting of sensor element development, element integration into Smart Sensor hardware, and testing of the resulting sensor systems in application environments. This paper provides a cross-section of these activities for multiple aerospace applications illustrating the technology challenges involved. The development and application testing topics discussed are: 1) The broadening of sensitivity and operational range of silicon carbide (SiC) Schottky gas sensor elements; 2) Integration of fire detection sensor technology into a "Lick and Stick" Smart Sensor hardware platform for Crew Exploration Vehicle applications; 3) Extended testing for zirconia based oxygen sensors in the basic "Lick and Stick" platform for environmental monitoring applications. It is concluded that that both core sensor platform technology and a basic hardware platform can enhance the viability of implementing smart sensor systems in aerospace applications.

SiC As An Energetic Particle Detector

NASA Technical Reports Server (NTRS)

Yan, F.; Hicks, J.; Shappirio, Mark D.; Brown, S.; Smith, C.; Xin, X.; Zhao, J. H.

2005-01-01

Several new technologies have been introduced recently in the region of semiconductor material for solid state detectors (SSD). Of particular interest is silicon carbide (SIC) since its band gap is larger than that of pure silicon, reducing its dark current and making SIC capable of operating at high temperatures and more tolerant of radiation damage. But the trade off is that a higher band gap also means fewer electron hole pairs generated, and thus a smaller signal, for detecting incident radiation. To determine what the lower limit of SiC detectors to energetic particles is, we irradiated a SiC diode with particles ranging in energy from 50 keV to 1.6 MeV and masses from 1 to 16 amu. We found that the SiC detectors sensitivity was comparable to that of pure silicon, with the SiC detector being able to measure particles down to 50 keV/amu and possibly lower.

Development of SiC Large Tapered Crystal Growth

NASA Technical Reports Server (NTRS)

Neudeck, Phil

2010-01-01

Majority of very large potential benefits of wide band gap semiconductor power electronics have NOT been realized due in large part to high cost and high defect density of commercial wafers. Despite 20 years of development, present SiC wafer growth approach is yet to deliver majority of SiC's inherent performance and cost benefits to power systems. Commercial SiC power devices are significantly de-rated in order to function reliably due to the adverse effects of SiC crystal dislocation defects (thousands per sq cm) in the SiC wafer.

Bismuth-Based, Disposable Sensor for the Detection of Hydrogen Sulfide Gas.

PubMed

Rosolina, Samuel M; Carpenter, Thomas S; Xue, Zi-Ling

2016-02-02

A new sensor for the detection of hydrogen sulfide (H2S) gas has been developed to replace commercial lead(II) acetate-based test papers. The new sensor is a wet, porous, paper-like substrate coated with Bi(OH)3 or its alkaline derivatives at pH 11. In contrast to the neurotoxic lead(II) acetate, bismuth is used due to its nontoxic properties, as Bi(III) has been a reagent in medications such as Pepto-Bismol. The reaction between H2S gas and the current sensor produces a visible color change from white to yellow/brown, and the sensor responds to ≥ 30 ppb H2S in a total volume of 1.35 L of gas, a typical volume of human breath. The alkaline, wet coating helps the trapping of acidic H2S gas and its reaction with Bi(III) species, forming colored Bi2S3. The sensor is suitable for testing human bad breath and is at least 2 orders of magnitude more sensitive than a commercial H2S test paper based on Pb(II)(acetate)2. The small volume of 1.35-L H2S is important, as the commercial Pb(II)(acetate)2-based paper requires large volumes of 5 ppm H2S gas. The new sensor reported here is inexpensive, disposable, safe, and user-friendly. A simple, laboratory setup for generating small volumes of ppb-ppm of H2S gas is also reported.

Miniaturized Metal (Metal Alloy)/PdO(x)/SiC Hydrogen and Hydrocarbon Gas Sensors

NASA Technical Reports Server (NTRS)

Hunter, Gary W. (Inventor); Xu, Jennifer C. (Inventor); Lukco, Dorothy (Inventor)

2008-01-01

A miniaturized Schottky diode hydrogen and hydrocarbon sensor and the method of making same is disclosed and claimed. The sensor comprises a catalytic metal layer, such as palladium, a silicon carbide substrate layer and a thin barrier layer in between the catalytic and substrate layers made of palladium oxide (PdO(x)). This highly stable device provides sensitive gas detection at temperatures ranging from at least 450 to 600 C. The barrier layer prevents reactions between the catalytic metal layer and the substrate layer. Conventional semiconductor fabrication techniques are used to fabricate the small-sided sensors. The use of a thicker palladium oxide barrier layer for other semiconductor structures such as a capacitor and transistor structures is also disclosed.

The role of boron nitride nanotube as a new chemical sensor and potential reservoir for hydrogen halides environmental pollutants

NASA Astrophysics Data System (ADS)

Yoosefian, Mehdi; Etminan, Nazanin; Moghani, Maryam Zeraati; Mirzaei, Samaneh; Abbasi, Shima

2016-10-01

Density functional theory (DFT) studies on the interaction of hydrogen halides (HX) environmental pollutants and the boron nitride nanotubes (BNNTs) have been reported. To exploit the possibility of BNNTs as gas sensors, the adsorption of hydrogen fluoride (HF), hydrogen chloride (HCl) and hydrogen bromide (HBr) on the side wall of armchair (5,5) boron nitride nanotubes have been investigated. B3LYP/6-31G (d) level were used to analyze the structural and electronic properties of investigate sensor. The adsorption process were interpreted by highest occupied molecular orbital (HOMO)-lowest unoccupied molecular orbital (LUMO), quantum theory of atoms in molecules (QTAIM), natural bond orbital (NBO) and molecular electrostatic potential (MEP) analysis. Topological parameters of bond critical points have been used to calculate as measure of hydrogen bond (HB) strength. Stronger binding energy, larger charge transfer and charge density illustrate that HF gas possesses chemisorbed adsorption process. The obtained results also show the strongest HB in HF/BNNT complex. We expect that results could provide helpful information for the design of new BNNTs based sensing devices.

Bis-ureidoquinoline as a selective fluoride anion sensor through hydrogen-bond interactions.

PubMed

Jo, Yunhee; Chidalla, Nagesh; Cho, Dong-Gyu

2014-10-03

Bis-ureidoquinoline shows a characteristic UV-vis absorbance and turn-on fluorescence changes in the presence of the fluoride anion. Such selective changes probably originate from the hydrogen-bond interactions, as shown by the (1)H NMR titration and DFT calculations. Bis-ureidoquinoline can be used as a fluoride-selective sensor for the detection of fluoride anions under illumination from a laboratory hand-held UV lamp.

Aerospace Sensor Systems: From Sensor Development To Vehicle Application

NASA Technical Reports Server (NTRS)

Hunter, Gary W.

2008-01-01

This paper presents an overview of years of sensor system development and application for aerospace systems. The emphasis of this work is on developing advanced capabilities for measurement and control of aeropropulsion and crew vehicle systems as well as monitoring the safety of those systems. Specific areas of work include chemical species sensors, thin film thermocouples and strain gages, heat flux gages, fuel gages, SiC based electronic devices and sensors, space qualified electronics, and MicroElectroMechanical Systems (MEMS) as well as integrated and multifunctional sensor systems. Each sensor type has its own technical challenges related to integration and reliability in a given application. The general approach has been to develop base sensor technology using microfabrication techniques, integrate sensors with "smart" hardware and software, and demonstrate those systems in a range of aerospace applications. Descriptions of the sensor elements, their integration into sensors systems, and examples of sensor system applications will be discussed. Finally, suggestions related to the future of sensor technology will be given. It is concluded that smart micro/nano sensor technology can revolutionize aerospace applications, but significant challenges exist in maturing the technology and demonstrating its value in real-life applications.

The study of hydrogen peroxide level under cisplatin action using genetically encoded sensor hyper

NASA Astrophysics Data System (ADS)

Belova, A. S.; Orlova, A. G.; Maslennikova, A. V.; Brilkina, A. A.; Balalaeva, I. V.; Antonova, N. O.; Mishina, N. M.; Shakhova, N. M.; Belousov, V. V.

2014-03-01

The aim of the work was to study the participation of hydrogen peroxide in reaction of cervical cancer cell line HeLa Kyoto on cisplatin action. Determination of hydrogen peroxide level was performed using genetically encoded fluorescent sensor HyPer2. The dependence of cell viability on cisplatin concentration was determined using MTT assay. Mechanisms of cell death as well as HyPer2 reaction was revealed by flow cytometry after 6-hours of incubation with cisplatin in different concentrations. Cisplatin used in low concentrations had no effect on hydrogen peroxide level in HeLa Kyoto cells. Increase of HyPer2 fluorescence was detected only after exposure with cisplatin in high concentration. The reaction was not the consequence of cell death.

Refractory Oxide Coatings on Sic Ceramics

NASA Technical Reports Server (NTRS)

Lee, Kang N.; Jacobson, Nathan S.; Miller, Robert A.

1994-01-01

Silicon carbide with a refractory oxide coating is potentially a very attractive ceramic system. It offers the desirable mechanical and physical properties of SiC and the environmental durability of a refractory oxide. The development of a thermal shock resistant plasma-sprayed mullite coating on SiC is discussed. The durability of the mullite/SiC in oxidizing, reducing, and molten salt environments is discussed. In general, this system exhibits better behavior than uncoated SiC. Areas for further developments are discussed.

Nanocrystalline mesoporous SMO thin films prepared by sol gel process for MEMS-based hydrogen sensor

NASA Astrophysics Data System (ADS)

Gong, Jianwei; Fei, Weifeng; Seal, Sudipta; Chen, Quanfang

2004-01-01

MEMS based SnO2 gas sensor with sol gel synthesized mesoporous nanocrystalline (<10 nm) semiconductor thin (100~150 nm) film has been recently developed. The SnO2 nano film is fabricated with the combination of polymeric sol gel chemistry with block copolymers used for structure directing agents. The novel hydrogen sensor has a fast response time (1s) and quick recovery time (3s), as well as good sensitivity (about 90%), comparing to other hydrogen sensors developed. The improved capabilities are credited to the large surface to volume ratio of gas sensing thin film with nano sized porous surface topology, which can greatly increase the sensitivity even at relatively low working temperature. The gas sensing film is deposited onto a thin dielectric membrane of low thermal conductivity, which provides good thermal isolation between substrate and the gas-sensitive heated area on the membrane. In this way the power consumption can be kept very low. Since the fabrication process is completely compatible with IC industry, it makes mass production possible and greatly reduces the cost. The working temperature of the new sensor can be reduced as low as 100°C. The low working temperature posse advantages such as lower power consumption, lower thermal induced signal shift as well as safe detection in certain environments where temperature is strictly limited.

Extreme temperature robust optical sensor designs and fault-tolerant signal processing

DOEpatents

Riza, Nabeel Agha [Oviedo, FL; Perez, Frank [Tujunga, CA

2012-01-17

Silicon Carbide (SiC) probe designs for extreme temperature and pressure sensing uses a single crystal SiC optical chip encased in a sintered SiC material probe. The SiC chip may be protected for high temperature only use or exposed for both temperature and pressure sensing. Hybrid signal processing techniques allow fault-tolerant extreme temperature sensing. Wavelength peak-to-peak (or null-to-null) collective spectrum spread measurement to detect wavelength peak/null shift measurement forms a coarse-fine temperature measurement using broadband spectrum monitoring. The SiC probe frontend acts as a stable emissivity Black-body radiator and monitoring the shift in radiation spectrum enables a pyrometer. This application combines all-SiC pyrometry with thick SiC etalon laser interferometry within a free-spectral range to form a coarse-fine temperature measurement sensor. RF notch filtering techniques improve the sensitivity of the temperature measurement where fine spectral shift or spectrum measurements are needed to deduce temperature.

Integrated High Payoff Rocket Propulsion Technology (IHPRPT) SiC Recession Model

NASA Technical Reports Server (NTRS)

Opila, E. J.

2009-01-01

SiC stability and recession rates were modeled in hydrogen/oxygen combustion environments for the Integrated High Payoff Rocket Propulsion Technology (IHPRPT) program. The IHPRPT program is a government and industry program to improve U.S. rocket propulsion systems. Within this program SiC-based ceramic matrix composites are being considered for transpiration cooled injector faceplates or rocket engine thrust chamber liners. Material testing under conditions representative of these environments was conducted at the NASA Glenn Research Center, Cell 22. For the study described herein, SiC degradation was modeled under these Cell 22 test conditions for comparison to actual test results: molar mixture ratio, MR (O2:H2) = 6, material temperatures to 1700 C, combustion gas pressures between 0.34 and 2.10 atm, and gas velocities between 8,000 and 12,000 fps. Recession was calculated assuming rates were controlled by volatility of thermally grown silica limited by gas boundary layer transport. Assumptions for use of this model were explored, including the presence of silica on the SiC surface, laminar gas boundary layer limited volatility, and accuracy of thermochemical data for volatile Si-O-H species. Recession rates were calculated as a function of temperature. It was found that at 1700 C, the highest temperature considered, the calculated recession rates were negligible, about 200 m/h, relative to the expected lifetime of the material. Results compared favorably to testing observations. Other mechanisms contributing to SiC recession are briefly described including consumption of underlying carbon and pitting. A simple expression for liquid flow on the material surface was developed from a one-dimensional treatment of the Navier-Stokes Equation. This relationship is useful to determine under which conditions glassy coatings or thermally grown silica would flow on the material surface, removing protective layers by shear forces. The velocity of liquid flow was found to

Development of a Hydrogen Gas Sensor Using a Double Saw Resonator System at Room Temperature

PubMed Central

Yunusa, Zainab; Hamidon, Mohd Nizar; Ismail, Alyani; Isa, Maryam Mohd; Yaacob, Mohd Hanif; Rahmanian, Saeed; Ibrahim, Siti Azlida; Shabaneh, Arafat A.A

2015-01-01

A double SAW resonator system was developed as a novel method for gas sensing applications. The proposed system was investigated for hydrogen sensing. Commercial Surface Acoustic Wave (SAW) resonators with resonance frequencies of 433.92 MHz and 433.42 MHz were employed in the double SAW resonator system configuration. The advantages of using this configuration include its ability for remote measurements, and insensitivity to vibrations and other external disturbances. The sensitive layer is composed of functionalized multiwalled carbon nanotubes and polyaniline nanofibers which were deposited on pre-patterned platinum metal electrodes fabricated on a piezoelectric substrate. This was mounted into the DSAWR circuit and connected in parallel. The sensor response was measured as the difference between the resonance frequencies of the SAW resonators, which is a measure of the gas concentration. The sensor showed good response towards hydrogen with a minimum detection limit of 1%. PMID:25730480

Application of a catalytic combustion sensor (Pellistor) for the monitoring of the explosiveness of a hydrogen-air mixture in the upper explosive limit range

PubMed Central

Krawczyk, M.; Namiesnik, J.

2003-01-01

A new technique is presented for continuous measurements of hydrogen contamination by air in the upper explosive limit range. It is based on the application of a catalytic combustion sensor placed in a cell through which the tested sample passes. The air content is the function of the quantity of formed heat during catalytic combustion of hydrogen inside the sensor. There is the possibility of using the method in industrial installations by using hydrogen for cooling electric current generators. PMID:18924620

Nanoplasmonic hydrogen sensing

NASA Astrophysics Data System (ADS)

Wadell, Carl; Syrenova, Svetlana; Langhammer, Christoph

2014-09-01

In this review we discuss the evolution of surface plasmon resonance and localized surface plasmon resonance based hydrogen sensors. We put particular focus on how they are used to study metal-hydrogen interactions at the nanoscale, both at the ensemble and the single nanoparticle level. Such efforts are motivated by a fundamental interest in understanding the role of nanosizing on metal hydride formation processes. However, nanoplasmonic hydrogen sensors are not only of academic interest but may also find more practical use as all-optical gas detectors in industrial and medical applications, as well in a future hydrogen economy, where hydrogen is used as a carbon free energy carrier.

Chemical reactivity of SiC fibre-reinforced SiC with beryllium and lithium ceramic breeder materials

NASA Astrophysics Data System (ADS)

Kleykamp, H.

2000-12-01

SiC fibre-reinforced SiC fabrics (f-SiC/SiC) are considered for structural materials of advanced fusion blanket concepts. Priority tasks are compatibility studies of SiC with Li breeder ceramics and the Be neutron multiplier. Isothermal and anisothermal powder reactions by DTA up to 1220°C were examined between Li 4SiO 4, Li 2ZrO 3 and Li 2TiO 3, respectively, and SiC and SiC/SiO 2 mixtures, respectively. The SiC/SiO 2 mixture simulated the chemical state of Nicalon fibres. Solid state reactions between SiC and Be pellets were studied by capsule experiments. The reaction products Be 2C and Si were observed between the initial phases after annealing at 800°C and 900°C. A parabolic time law with a chemical diffusion coefficient D˜=2.6×10 -15 m 2/s of Be in the products was deduced at 900°C. Additional oxygen released from SiO 2 as a component of the simulated fibres oxidised the reaction products via the gas phase by formation of a Be 2SiO 4 layer. All reactions are kinetically hindered below 700°C.

Note: Durability analysis of optical fiber hydrogen sensor based on Pd-Y alloy film.

PubMed

Huang, Peng-cheng; Chen, You-ping; Zhang, Gang; Song, Han; Liu, Yi

2016-02-01

The Pd-Y alloy sensing film has an excellent property for hydrogen detection, but just for one month, the sensing film's property decreases seriously. To study the failure of the sensing film, the XPS spectra analysis was used to explore the chemical content of the Pd-Y alloy film, and analysis results demonstrate that the yttrium was oxidized. The paper presented that such an oxidized process was the potential reason of the failure of the sensing film. By understanding the reason of the failure of the sensing film better, we could improve the manufacturing process to enhance the property of hydrogen sensor.

SiC Protective Coating for Photovoltaic Retinal Prostheses

PubMed Central

Lei, Xin; Kane, Sheryl; Cogan, Stuart; Lorach, Henri; Galambos, Ludwig; Huie, Philip; Mathieson, Keith; Kamins, Theodore; Harris, James; Palanker, Daniel

2016-01-01

Objective To evaluate PECVD SiC as a protective coating for retinal prostheses and other implantable devices, and to study their failure mechanisms in vivo. Approach Retinal prostheses were implanted in rats subretinally for up to 1 year. Degradation of implants was characterized by optical and scanning electron microscopy. Dissolution rates of SiC, SiNx and thermal SiO2 were measured in accelerated soaking tests in saline at 87°C. Defects in SiC films were revealed and analyzed by selectively removing the materials underneath those defects. Main results At 87°C SiNx dissolved at 18.3±0.3nm/day, while SiO2 grown at high temperature (1000°C) dissolved at 1.04±0.08A/day. SiC films demonstrated the best stability, with no quantifiable change after 112 days. Defects in thin SiC films appeared primarily over complicated topography and rough surfaces. Significance SiC coatings demonstrating no erosion in accelerated aging test for 112 days at 87°C, equivalent to about 10 years in vivo, can offer effective protection of the implants. Photovoltaic retinal prostheses with PECVD SiC coatings exhibited effective protection from erosion during the 4-month follow-up in vivo. The optimal thickness of SiC layers is about 560nm, as defined by anti-reflective properties and by sufficient coverage to eliminate defects. PMID:27323882

Bulk Thermoelectric Materials Reinforced with SiC Whiskers

NASA Astrophysics Data System (ADS)

Akao, Takahiro; Fujiwara, Yuya; Tarui, Yuki; Onda, Tetsuhiko; Chen, Zhong-Chun

2014-06-01

SiC whiskers have been incorporated into Zn4Sb3 compound as reinforcements to overcome its extremely brittle nature. The bulk samples were prepared by either hot-extrusion or hot-pressing techniques. The obtained products containing 1 vol.% to 5 vol.% SiC whiskers were confirmed to exhibit sound appearance, high density, and fine-grained microstructure. Mechanical properties such as the hardness and fracture resistance were improved by the addition of SiC whiskers, as a result of dispersion strengthening and microstructural refinement induced by a pinning effect. Furthermore, crack deflection and/or bridging/pullout mechanisms are invoked by the whiskers. Regarding the thermoelectric properties, the Seebeck coefficient and electrical resistivity values comparable to those of the pure compound are retained over the entire range of added whisker amount. However, the thermal conductivity becomes large with increasing amount of SiC whiskers because of the much higher conductivity of SiC relative to the Zn4Sb3 matrix. This results in a remarkable degradation of the dimensionless figure of merit in the samples with addition of SiC whiskers. Therefore, the optimum amount of SiC whiskers in the Zn4Sb3 matrix should be determined by balancing the mechanical properties and thermoelectric performance.

Displacement damage dose and implantation temperature effects on the trapping and release of deuterium implanted into SiC

NASA Astrophysics Data System (ADS)

Muñoz, P.; García-Cortés, I.; Sánchez, F. J.; Moroño, A.; Malo, M.; Hodgson, E. R.

2017-09-01

Radiation damage to flow channel insert (FCI) materials is an important issue for the concept of dual-coolant blanket development in future fusion devices. Silicon Carbide (SiC) is one of the most suitable materials for FCI. Because of the severe radiation environment and exposure to tritium during operation it is of fundamental importance to study hydrogen isotope trapping and release in these materials. Here the trapping, detrapping, and diffusion of deuterium implanted into SiC is studied in correlation with pre- and post-damage induced under different conditions. For this, SiC samples are pre-damaged with 50 keV Ne+ ions at different temperatures (20, 200, 450, 700 °C) to different damage doses (1, 3.6, 7 dpa). Next, deuterium is introduced into the samples at 450 °C by ion implantation at 7 keV. The implanted deuterium retained in the sample is analysed using secondary ion mass spectrometry (SIMS) and thermo-stimulated desorption (TSD) measurements. The results indicate that with increasing neon damage dose, the maximum deuterium desorption occurs at higher temperatures. In contrast, when increasing neon implantation temperature for a fixed dose, the maximum deuterium desorption release temperature decreases. It is interpreted that the neon bombardment produces thermally stable traps for hydrogen isotopes and the stability of this damage increases with neon pre-implantation dose. A decrease of the trapping of implanted deuterium is also observed to occur due to damage recovery by thermal annealing during pre-implantation at the higher temperatures. Finally, direct particle bombardment induced deuterium release is also observed.

Corrosion pitting of SiC by molten salts

NASA Technical Reports Server (NTRS)

Jacobson, N. S.; Smialek, J. L.

1986-01-01

The corrosion of SiC by thin films of Na2CO3 and Na2SO4 at 1000 C is characterized by a severe pitting attack of the SiC substrate. A range of different Si and SiC substrates were examined to isolate the factors critical to pitting. Two types of pitting attack are identified: attack at structural discontinuities and a crater-like attack. The crater-like pits are correlated with bubble formation during oxidation of the SiC. It appears that bubbles create unprotected regions, which are susceptible to enhanced attack and, hence, pit formation.

Fast detection and low power hydrogen sensor using edge-oriented vertically aligned 3-D network of MoS2 flakes at room temperature

NASA Astrophysics Data System (ADS)

Agrawal, A. V.; Kumar, R.; Venkatesan, S.; Zakhidov, A.; Zhu, Z.; Bao, Jiming; Kumar, Mahesh; Kumar, Mukesh

2017-08-01

The increased usage of hydrogen as a next generation clean fuel strongly demands the parallel development of room temperature and low power hydrogen sensors for their safety operation. In this work, we report strong evidence for preferential hydrogen adsorption at edge-sites in an edge oriented vertically aligned 3-D network of MoS2 flakes at room temperature. The vertically aligned edge-oriented MoS2 flakes were synthesised by a modified CVD process on a SiO2/Si substrate and confirmed by Scanning Electron Microscopy. Raman spectroscopy and PL spectroscopy reveal the signature of few-layer MoS2 flakes in the sample. The sensor's performance was tested from room temperature to 150 °C for 1% hydrogen concentration. The device shows a fast response of 14.3 s even at room temperature. The sensitivity of the device strongly depends on temperature and increases from ˜1% to ˜11% as temperature increases. A detail hydrogen sensing mechanism was proposed based on the preferential hydrogen adsorption at MoS2 edge sites. The proposed gas sensing mechanism was verified by depositing ˜2-3 nm of ZnO on top of the MoS2 flakes that partially passivated the edge sites. We found a decrease in the relative response of MoS2-ZnO hybrid structures. This study provides a strong experimental evidence for the role of MoS2 edge-sites in the fast hydrogen sensing and a step closer towards room temperature, low power (0.3 mW), hydrogen sensor development.

Fabrication of large aperture SiC brazing mirror

NASA Astrophysics Data System (ADS)

Li, Ang; Wang, Peipei; Dong, Huiwen; Wang, Peng

2016-10-01

The SiC brazing mirror is the mirror whose blank is made by assembling together smaller SiC pieces with brazing technique. Using such kinds of joining techniques, people can manufacture large and complex SiC assemblies. The key technologies of fabricating and testing SiC brazing flat mirror especially for large aperture were studied. The SiC brazing flat mirror was ground by smart ultrasonic-milling machine, and then it was lapped by the lapping smart robot and measured by Coordinate Measuring Machine (CMM). After the PV of the surface below 4um, we did classic coarse polishing to the surface and studied the shape of the polishing tool which directly effects removal amount distribution. Finally, it was figured by the polishing smart robot and measured by Fizeau interferometer. We also studied the influence of machining path and removal functions of smart robots on the manufacturing results and discussed the use of abrasive in this process. At last, an example for fabricating and measuring a similar SiC brazing flat mirror with the aperture of 600 mm made by Shanghai Institute of Ceramics was given. The mirror blank consists of 6 SiC sectors and the surface was finally processed to a result of the Peak-to-Valley (PV) 150nm and Root Mean Square (RMS) 12nm.

29 CFR 510.21 - SIC codes.

Code of Federal Regulations, 2010 CFR

2010-07-01

... 29 Labor 3 2010-07-01 2010-07-01 false SIC codes. 510.21 Section 510.21 Labor Regulations Relating to Labor (Continued) WAGE AND HOUR DIVISION, DEPARTMENT OF LABOR REGULATIONS IMPLEMENTATION OF THE... Classification of Industries § 510.21 SIC codes. (a) The Conference Report specifically cites Puerto Rico's...

Miniaturized metal (metal alloy)/ PdO.sub.x/SiC hydrogen and hydrocarbon gas sensors

NASA Technical Reports Server (NTRS)

Hunter, Gary W. (Inventor); Xu, Jennifer C. (Inventor); Lukco, Dorothy (Inventor)

2011-01-01

A miniaturized Schottky diode hydrogen and hydrocarbon sensor and the method of making same is disclosed and claimed. The sensor comprises a catalytic metal layer, such as palladium, a silicon carbide substrate layer and a thin barrier layer in between the catalytic and substrate layers made of palladium oxide (PdO.sub.x ). This highly stable device provides sensitive gas detection at temperatures ranging from at least 450 to 600.degree. C. The barrier layer prevents reactions between the catalytic metal layer and the substrate layer. Conventional semiconductor fabrication techniques are used to fabricate the small-sized sensors. The use of a thicker palladium oxide barrier layer for other semiconductor structures such as a capacitor and transistor structures is also disclosed.

Miniaturized metal (metal alloy)/ PdO.sub.x/SiC hydrogen and hydrocarbon gas sensors

NASA Technical Reports Server (NTRS)

Xu, Jennifer C. (Inventor); Hunter, Gary W. (Inventor); Lukco, Dorothy (Inventor)

2008-01-01

A miniaturized Schottky diode hydrogen and hydrocarbon sensor and the method of making same is disclosed and claimed. The sensor comprises a catalytic metal layer, such as palladium, a silicon carbide substrate layer and a thin barrier layer in between the catalytic and substrate layers made of palladium oxide (PdO.sub.x). This highly stable device provides sensitive gas detection at temperatures ranging from at least 450 to 600.degree. C. The barrier layer prevents reactions between the catalytic metal layer and the substrate layer. Conventional semiconductor fabrication techniques are used to fabricate the small-sized sensors. The use of a thicker palladium oxide barrier layer for other semiconductor structures such as a capacitor and transistor structures is also disclosed.

Electronic and Interfacial Properties of PD/6H-SiC Schottky Diode Gas Sensors

NASA Technical Reports Server (NTRS)

Chen, Liang-Yu; Hunter, Gary W.; Neudeck, Philip G.; Bansal, Gaurav; Petit, Jeremy B.; Knight, Dak; Liu, Chung-Chiun; Wu, Qinghai

1996-01-01

Pd/SiC Schottky diodes detect hydrogen and hydrocarbons with high sensitivity. Variation of the diode temperature from 100 C to 200 C shows that the diode sensitivity to propylene is temperature dependent. Long-term heat treating at 425 C up to 140 hours is carried out to determine the effect of extended heat treating on the diode properties and gas sensitivity. The heat treating significantly affects the diode's capacitive characteristics, but the diode's current carrying characteristics are much more stable with a large response to hydrogen. Scanning Electron Microscopy and X-ray Spectrometry studies of the Pd surface after the heating show cluster formation and background regions with grain structure observed in both regions. The Pd and Si concentrations vary between grains. Auger Electron Spectroscopy depth profiles revealed that the heat treating promoted interdiffusion and reaction between the Pd and SiC dw broadened the interface region. This work shows that Pd/SiC Schottky diodes have significant potential as high temperature gas sensors, but stabilization of the structure is necessary to insure their repeatability in long-term, high temperature applications.

A nanocomposite-based electrochemical sensor for non-enzymatic detection of hydrogen peroxide

PubMed Central

Du, Xin; Chen, Yuan; Dong, Wenhao; Han, Bingkai; Liu, Min; Chen, Qiang; Zhou, Jun

2017-01-01

Hydrogen peroxide (H2O2) plays important signaling roles in normal physiology and disease. However, analyzing the actions of H2O2 is often impeded by the difficulty in detecting this molecule. Herein, we report a novel nanocomposite-based electrochemical sensor for non-enzymatic detection of H2O2. Graphene oxide (GO) was selected as the dopant for the synthesis of polyaniline (PANI), leading to the successful fabrication of a water-soluble and stable GO-PANI composite. GO-PANI was subsequently subject to cyclic voltammetry to generate reduced GO-PANI (rGO-PANI), enhancing the conductivity of the material. Platinum nanoparticles (PtNPs) were then electrodeposited on the surface of the rGO-PANI-modified glassy carbon electrode (GCE) to form an electrochemical H2O2 sensor. Compared to previously reported sensors, the rGO-PANI-PtNP/GCE exhibited an expanded linear range, higher sensitivity, and lower detection limit in the quantification of H2O2. In addition, the sensor displayed outstanding reproducibility and selectivity in real-sample examination. Our study suggests that the rGO-PANI-PtNP/GCE may have broad utility in H2O2 detection under physiological and pathological conditions. PMID:28035076

Safe Detection System for Hydrogen Leaks

DOE Office of Scientific and Technical Information (OSTI.GOV)

Lieberman, Robert A.; Beshay, Manal

2012-02-29

Hydrogen is an "environmentally friendly" fuel for future transportation and other applications, since it produces only pure ("distilled") water when it is consumed. Thus, hydrogen-powered vehicles are beginning to proliferate, with the total number of such vehicles expected to rise to nearly 100,000 within the next few years. However, hydrogen is also an odorless, colorless, highly flammable gas. Because of this, there is an important need for hydrogen safety monitors that can warn of hazardous conditions in vehicles, storage facilities, and hydrogen production plants. To address this need, IOS has developed a unique intrinsically safe optical hydrogen sensing technology, andmore » has embodied it in detector systems specifically developed for safety applications. The challenge of using light to detect a colorless substance was met by creating chemically-sensitized optical materials whose color changes in the presence of hydrogen. This reversible reaction provides a sensitive, reliable, way of detecting hydrogen and measuring its concentration using light from low-cost LEDs. Hydrogen sensors based on this material were developed in three completely different optical formats: point sensors ("optrodes"), integrated optic sensors ("optical chips"), and optical fibers ("distributed sensors") whose entire length responds to hydrogen. After comparing performance, cost, time-to-market, and relative market need for these sensor types, the project focused on designing a compact optrode-based single-point hydrogen safety monitor. The project ended with the fabrication of fifteen prototype units, and the selection of two specific markets: fuel cell enclosure monitoring, and refueling/storage safety. Final testing and development of control software for these markets await future support.« less

Packaging Technology Designed, Fabricated, and Assembled for High-Temperature SiC Microsystems

NASA Technical Reports Server (NTRS)

Chen, Liang-Yu

2003-01-01

A series of ceramic substrates and thick-film metalization-based prototype microsystem packages designed for silicon carbide (SiC) high-temperature microsystems have been developed for operation in 500 C harsh environments. These prototype packages were designed, fabricated, and assembled at the NASA Glenn Research Center. Both the electrical interconnection system and the die-attach scheme for this packaging system have been tested extensively at high temperatures. Printed circuit boards used to interconnect these chip-level packages and passive components also are being fabricated and tested. NASA space and aeronautical missions need harsh-environment, especially high-temperature, operable microsystems for probing the inner solar planets and for in situ monitoring and control of next-generation aeronautical engines. Various SiC high-temperature-operable microelectromechanical system (MEMS) sensors, actuators, and electronics have been demonstrated at temperatures as high as 600 C, but most of these devices were demonstrated only in the laboratory environment partially because systematic packaging technology for supporting these devices at temperatures of 500 C and beyond was not available. Thus, the development of a systematic high-temperature packaging technology is essential for both in situ testing and the commercialization of high-temperature SiC MEMS. Researchers at Glenn developed new prototype packages for high-temperature microsystems using ceramic substrates (aluminum nitride and 96- and 90-wt% aluminum oxides) and gold (Au) thick-film metalization. Packaging components, which include a thick-film metalization-based wirebond interconnection system and a low-electrical-resistance SiC die-attachment scheme, have been tested at temperatures up to 500 C. The interconnection system composed of Au thick-film printed wire and 1-mil Au wire bond was tested in 500 C oxidizing air with and without 50-mA direct current for over 5000 hr. The Au thick

SiC Nanoparticles Toughened-SiC/MoSi2-SiC Multilayer Functionally Graded Oxidation Protective Coating for Carbon Materials at High Temperatures

NASA Astrophysics Data System (ADS)

Abdollahi, Alireza; Ehsani, Naser; Valefi, Zia; Khalifesoltani, Ali

2017-05-01

A SiC nanoparticle toughened-SiC/MoSi2-SiC functionally graded oxidation protective coating on graphite was prepared by reactive melt infiltration (RMI) at 1773 and 1873 K under argon atmosphere. The phase composition and anti-oxidation behavior of the coatings were investigated. The results show that the coating was composed of MoSi2, α-SiC and β-SiC. By the variations of Gibbs free energy (calculated by HSC Chemistry 6.0 software), it could be suggested that the SiC coating formed at low temperatures by solution-reprecipitation mechanism and at high temperatures by gas-phase reactions and solution-reprecipitation mechanisms simultaneously. SiC nanoparticles could improve the oxidation resistance of SiC/MoSi2-SiC multiphase coating. Addition of SiC nanoparticles increases toughness of the coating and prevents spreading of the oxygen diffusion channels in the coating during the oxidation test. The mass loss and oxidation rate of the SiC nanoparticle toughened-SiC/MoSi2-SiC-coated sample after 10-h oxidation at 1773 K were only 1.76% and 0.32 × 10-2 g/cm3/h, respectively.

A Dual Sensor for pH and Hydrogen Peroxide Using Polymer-Coated Optical Fibre Tips.

PubMed

Purdey, Malcolm S; Thompson, Jeremy G; Monro, Tanya M; Abell, Andrew D; Schartner, Erik P

2015-12-17

This paper demonstrates the first single optical fibre tip probe for concurrent detection of both hydrogen peroxide (H₂O₂) concentration and pH of a solution. The sensor is constructed by embedding two fluorophores: carboxyperoxyfluor-1 (CPF1) and seminaphtharhodafluor-2 (SNARF2) within a polymer matrix located on the tip of the optical fibre. The functionalised fibre probe reproducibly measures pH, and is able to accurately detect H₂O₂ over a biologically relevant concentration range. This sensor offers potential for non-invasive detection of pH and H₂O₂ in biological environments using a single optical fibre.

Hysteresis in the Active Oxidation of SiC

NASA Technical Reports Server (NTRS)

Jacobson, Nathan S.; Harder, Bryan J.; Myers, Dwight L.

2011-01-01

Si and SiC show both passive oxidation behavior where a protective film of SiO2 forms and active oxidation behavior where a volatile suboxide SiO(g) forms. The active-to-passive and passive-to-active oxidation transitions are explored for both Si and SiC. Si shows a dramatic difference between the P(O2) for the two transitions of 10-4 bar. The active-to-passive transition is controlled by the condition for SiO2/Si equilibrium and the passive-to-active transition is controlled by the decomposition of SiO2. In the case of SiC, the P(O2) for these transitions are much closer. The active-to-passive transition appears to be controlled by the condition for SiO2/SiC equilibrium. The passive-to-active transition appears to be controlled by the interfacial reaction of SiC and SiO2 and subsequent generation of gases at the interface which leads to scale breakdown.

Study of Erosive Wear Behaviour on SIC/SIC Composites

NASA Astrophysics Data System (ADS)

Suh, Min-Soo

In the field of aerospace propulsion system, erosive wear on continuous silicon carbide (SiC) fibre-reinforced SiC (SiC/SiC) composites is of significant issue to achieve high energy efficiency. This paper proposes a crucial factor and a design guideline of SiC/SiC composites for higher erosion performance regarding cost effectiveness. Fabrication and evaluation of impacts and wear on SiC/SiC composites are successfully carried out. Erosive wear behaviours of the CVI and the LPS composites evidently show that the crucial fabrication factor against solid particle erosion (SPE). Erosive wear mechanisms on various SiC/SiC composites are determined based on the analysis of erosive wear behaviour. Designing guideline for the SiC/SiC composites for pursuit of high erosion performance is also proposed as focusing on the followings; volume fraction of matrix, strength of the matrix, bonding strength, and PyC interface.

SiC Seeded Crystal Growth

NASA Astrophysics Data System (ADS)

Glass, R. C.; Henshall, D.; Tsvetkov, V. F.; Carter, C. H., Jr.

1997-07-01

The availability of relatively large (30 mm) SiC wafers has been a primary reason for the renewed high level of interest in SiC semiconductor technology. Projections that 75 mm SiC wafers will be available in 2 to 3 years have further peaked this interest. Now both 4H and 6H polytypes are available, however, the micropipe defects that occur to a varying extent in all wafers produced to date are seen by many as preventing the commercialization of many types of SiC devices, especially high current power devices. Most views on micropipe formation are based around Frank's theory of a micropipe being the hollow core of a screw dislocation with a huge Burgers vector (several times the unit cell) and with the diameter of the core having a direct relationship with the magnitude of the Burgers vector. Our results show that there are several mechanisms or combinations of these mechanisms which cause micropipes in SiC boules grown by the seeded sublimation method. Additional considerations such as polytype variations, dislocations and both impurity and diameter control add to the complexity of producing high quality wafers. Recent results at Cree Research, Inc., including wafers with micropipe densities of less than 1 cm - 2 (with 1 cm2 areas void of micropipes), indicate that micropipes will be reduced to a level that makes high current devices viable and that they may be totally eliminated in the next few years. Additionally, efforts towards larger diameter high quality substrates have led to production of 50 mm diameter 4H and 6H wafers for fabrication of LEDs and the demonstration of 75 mm wafers. Low resistivity and semi-insulating electrical properties have also been attained through improved process and impurity control. Although challenges remain, the industry continues to make significant progress towards large volume SiC-based semiconductor fabrication.

Development of SiC Large Tapered Crystal Growth

NASA Technical Reports Server (NTRS)

Neudeck, Phil

2011-01-01

Research Focus Area: Power Electronics, Temperature Tolerant Devices. Demonstrate initial feasibility of totally new "Large Tapered Crystal" (LTC) process for growing vastly improved large-diameter wide-band gap wafers. Addresses Targets: The goal of this research is to experimentally investigate and demonstrate feasibility of the key unproven LTC growth processes in SiC. Laser-assisted growth of long SiC fiber seeds. Radial epitaxial growth enlargement of seeds into large SiC boules. Uniqueness and Impacts open a new technology path to large-diameter SiC and GaN wafers with 1000-fold defect density improvement at 2-4 fold lower cost. Leapfrog improvement in wide band gap power device capability and cost.

Predictive sensor method and apparatus

NASA Technical Reports Server (NTRS)

Cambridge, Vivien J.; Koger, Thomas L.

1993-01-01

A microprocessor and electronics package employing predictive methodology was developed to accelerate the response time of slowly responding hydrogen sensors. The system developed improved sensor response time from approximately 90 seconds to 8.5 seconds. The microprocessor works in real-time providing accurate hydrogen concentration corrected for fluctuations in sensor output resulting from changes in atmospheric pressure and temperature. Following the successful development of the hydrogen sensor system, the system and predictive methodology was adapted to a commercial medical thermometer probe. Results of the experiment indicate that, with some customization of hardware and software, response time improvements are possible for medical thermometers as well as other slowly responding sensors.

Paralinear Oxidation of CVD SiC in Water Vapor

NASA Technical Reports Server (NTRS)

Opila, Elizabeth J.; Hann, Raiford E., Jr.

1997-01-01

The oxidation kinetics of CVD SiC were monitored by thermogravimetric analysis (TGA) in a 50% H2O/50% O2 gas mixture flowing at 4.4 cm/s for temperatures between 1200 and 1400 C. Paralinear weight change kinetics were observed as the water vapor oxidized the SiC and simultaneously volatilized the silica scale. The long-term degradation rate of SiC is determined by the volatility of the silica scale. Rapid SiC surface recession rates were estimated from these data for actual aircraft engine combustor conditions.

Fiber-optic temperature sensor using a spectrum-modulating semiconductor etalon

NASA Technical Reports Server (NTRS)

Beheim, Glenn; Anthan, Donald J.; Beheim, Glenn; Anthan, Donald J.

1987-01-01

Described is a fiber-optic temperature sensor that uses a spectrum modulating SiC etalon. The spectral output of this type of sensor may be analyzed to obtain a temperature measurement which is largely independent of the transmission properties of the sensor's fiber-optic link. A highly precise laboratory spectrometer is described in detail, and this instrument is used to study the properties of this type of sensor. Also described are a number of different spectrum analyzers that are more suitable for use in a practical thermometer.

Proton conduction in electrolyte made of manganese dioxide for hydrogen gas sensor

DOE Office of Scientific and Technical Information (OSTI.GOV)

Koyanaka, Hideki; Ueda, Yoshikatsu; Takeuchi, K

2012-01-01

We propose a network model of oxygen-pairs to store and conduct protons on the surface of manganese dioxide with a weak covalent bond like protons stored in pressured ice. The atomic distances of oxygen-pairs were estimated between 2.57 and 2.60 angstroms in crystal structures of ramsdellite-type and lambda-type manganese dioxides by using protonated samples and inelastic neutron scattering measurements. Good properties for a hydrogen gas sensor using electrolytes made of manganese dioxides that contain such oxygen-pairs were confirmed experimentally.

Computational Modeling of Radiation Phenomenon in SiC for Nuclear Applications

NASA Astrophysics Data System (ADS)

Ko, Hyunseok

Silicon carbide (SiC) material has been investigated for promising nuclear materials owing to its superior thermo-mechanical properties, and low neutron cross-section. While the interest in SiC has been increasing, the lack of fundamental understanding in many radiation phenomena is an important issue. More specifically, these phenomena in SiC include the fission gas transport, radiation induced defects and its evolution, radiation effects on the mechanical stability, matrix brittleness of SiC composites, and low thermal conductivities of SiC composites. To better design SiC and SiC composite materials for various nuclear applications, understanding each phenomenon and its significance under specific reactor conditions is important. In this thesis, we used various modeling approaches to understand the fundamental radiation phenomena in SiC for nuclear applications in three aspects: (a) fission product diffusion through SiC, (b) optimization of thermodynamic stable self-interstitial atom clusters, (c) interface effect in SiC composite and their change upon radiation. In (a) fission product transport work, we proposed that Ag/Cs diffusion in high energy grain boundaries may be the upper boundary in unirradiated SiC at relevant temperature, and radiation enhanced diffusion is responsible for fast diffusion measured in post-irradiated fuel particles. For (b) the self-interstitial cluster work, thermodynamically stable clusters are identified as a function of cluster size, shape, and compositions using a genetic algorithm. We found that there are compositional and configurational transitions for stable clusters as the cluster size increases. For (c) the interface effect in SiC composite, we investigated recently proposed interface, which is CNT reinforced SiC composite. The analytical model suggests that CNT/SiC composites have attractive mechanical and thermal properties, and these fortify the argument that SiC composites are good candidate materials for the cladding

AIN-Based Packaging for SiC High-Temperature Electronics

NASA Technical Reports Server (NTRS)

Savrun, Ender

2004-01-01

Packaging made primarily of aluminum nitride has been developed to enclose silicon carbide-based integrated circuits (ICs), including circuits containing SiC-based power diodes, that are capable of operation under conditions more severe than can be withstood by silicon-based integrated circuits. A major objective of this development was to enable packaged SiC electronic circuits to operate continuously at temperatures up to 500 C. AlN-packaged SiC electronic circuits have commercial potential for incorporation into high-power electronic equipment and into sensors that must withstand high temperatures and/or high pressures in diverse applications that include exploration in outer space, well logging, and monitoring of nuclear power systems. This packaging embodies concepts drawn from flip-chip packaging of silicon-based integrated circuits. One or more SiC-based circuit chips are mounted on an aluminum nitride package substrate or sandwiched between two such substrates. Intimate electrical connections between metal conductors on the chip(s) and the metal conductors on external circuits are made by direct bonding to interconnections on the package substrate(s) and/or by use of holes through the package substrate(s). This approach eliminates the need for wire bonds, which have been the most vulnerable links in conventional electronic circuitry in hostile environments. Moreover, the elimination of wire bonds makes it possible to pack chips more densely than was previously possible.

Ab initio study of friction of graphene flake on graphene/graphite or SiC surface

NASA Astrophysics Data System (ADS)

Gulseren, Oguz; Tayran, Ceren; Sayin, Ceren Sibel

Recently, the rich dynamics of graphene flake on graphite or SiC surfaces are revealed from atomic force microcopy experiments. The studies toward to the understanding of microscopic origin of friction are getting a lot of attention. Despite the several studies of these systems using molecular dynamics methods, density functional theory based investigations are limited because of the huge system sizes. In this study, we investigated the frictional force on graphene flake on graphite or SiC surfaces from pseudopotential planewave calculations based on density functional theory. In both cases, graphene flake (24 C) on graphite or SiC surface, bilayer flake is introduced by freezing the top layer as well as the bottom layer of the surface slab. After fixing the load with these frozen layers, we checked the relative motion of the flake over the surface. A minimum energy is reached when the flake is moved on graphene to attain AB stacking. We also conclude that edge reconstruction because of the finite size of the flake is very critical for frictional properties of the flake; therefore the saturation of dangling bonds with hydrogen is also addressed. Not only the symmetric configurations remaining parameter space is extensively studied. Supported by TUBITAK Project No: 114F162. This work is supported by TUBITAK Project No: 114F162.

Comparative study of SiC- and Si-based photovoltaic inverters

NASA Astrophysics Data System (ADS)

Ando, Yuji; Oku, Takeo; Yasuda, Masashi; Shirahata, Yasuhiro; Ushijima, Kazufumi; Murozono, Mikio

2017-01-01

This article reports comparative study of 150-300 W class photovoltaic inverters (Si inverter, SiC inverter 1, and SiC inverter 2). In these sub-kW class inverters, the ON-resistance was considered to have little influence on the efficiency. The developed SiC inverters, however, have exhibited an approximately 3% higher direct current (DC)-alternating current (AC) conversion efficiency as compared to the Si inverter. Power loss analysis indicated a reduction in the switching and reverse recovery losses of SiC metal-oxide-semiconductor field-effect transistors used for the DC-AC converter is responsible for this improvement. In the SiC inverter 2, an increase of the switching frequency up to 100 kHz achieved a state-of-the-art combination of the weight (1.25 kg) and the volume (1260 cm3) as a 150-250 W class inverter. Even though the increased switching frequency should cause the increase of the switching losses, the SiC inverter 2 exhibited an efficiency comparable to the SiC inverter 1 with a switching frequency of 20 kHz. The power loss analysis also indicated a decreased loss of the DC-DC converter built with SiC Schottky barrier diodes led to the high efficiency for its increased switching frequency. These results clearly indicated feasibility of SiC devices even for sub-kW photovoltaic inverters, which will be available for the applications where compactness and efficiency are of tremendous importance.

Highly flexible, nonflammable and free-standing SiC nanowire paper

NASA Astrophysics Data System (ADS)

Chen, Jianjun; Liao, Xin; Wang, Mingming; Liu, Zhaoxiang; Zhang, Judong; Ding, Lijuan; Gao, Li; Li, Ye

2015-03-01

Flexible paper-like semiconductor nanowire materials are expected to meet the criteria for some emerging applications, such as components of flexible solar cells, electrical batteries, supercapacitors, nanocomposites, bendable or wearable electronic or optoelectronic components, and so on. As a new generation of wide-bandgap semiconductors and reinforcements in composites, SiC nanowires have advantages in power electronic applications and nanofiber reinforced ceramic composites. Herein, free-standing SiC nanowire paper consisting of ultralong single-crystalline SiC nanowires was prepared through a facile vacuum filtration approach. The ultralong SiC nanowires were synthesized by a sol-gel and carbothermal reduction method. The flexible paper composed of SiC nanowires is ~100 nm in width and up to several hundreds of micrometers in length. The nanowires are intertwisted with each other to form a three-dimensional network-like structure. SiC nanowire paper exhibits high flexibility and strong mechanical stability. The refractory performance and thermal stability of SiC nanowire paper were also investigated. The paper not only exhibits excellent nonflammability in fire, but also remains well preserved without visible damage when it is heated in an electric oven at a high temperature (1000 °C) for 3 h. With its high flexibility, excellent nonflammability, and high thermal stability, the free-standing SiC nanowire paper may have the potential to improve the ablation resistance of high temperature ceramic composites.Flexible paper-like semiconductor nanowire materials are expected to meet the criteria for some emerging applications, such as components of flexible solar cells, electrical batteries, supercapacitors, nanocomposites, bendable or wearable electronic or optoelectronic components, and so on. As a new generation of wide-bandgap semiconductors and reinforcements in composites, SiC nanowires have advantages in power electronic applications and nanofiber

New constructions of approximately SIC-POVMs via difference sets

NASA Astrophysics Data System (ADS)

Luo, Gaojun; Cao, Xiwang

2018-04-01

In quantum information theory, symmetric informationally complete positive operator-valued measures (SIC-POVMs) are related to quantum state tomography (Caves et al., 2004), quantum cryptography (Fuchs and Sasaki, 2003) [1], and foundational studies (Fuchs, 2002) [2]. However, constructing SIC-POVMs is notoriously hard. Although some SIC-POVMs have been constructed numerically, there does not exist an infinite class of them. In this paper, we propose two constructions of approximately SIC-POVMs, where a small deviation from uniformity of the inner products is allowed. We employ difference sets to present the first construction and the dimension of the approximately SIC-POVMs is q + 1, where q is a prime power. Notably, the dimension of this framework is new. The second construction is based on partial geometric difference sets and works whenever the dimension of the framework is a prime power.

Influence of the hydrogen bond quantum nature in liquid water and heavy water on stimulated Raman scattering

NASA Astrophysics Data System (ADS)

Li, Fabing; Li, Zhanlong; Li, Shuo; Fang, Wenhui; Sun, Chenglin; Men, Zhiwei

2018-06-01

Stimulated Raman scattering (SRS) of liquid water and heavy water have been investigated using Nd:YAG laser. The SRS spectra of liquid heavy water indicate that ice-VII and ice-VIII structures are formed by shock-induced compression (SIC) in forward and backward directions, respectively. Simultaneously, the SRS spectra reveal of liquid water that only ice-VII structure is formed in the backward direction. The difference in ice structures formed by SIC in liquid water and heavy water could be attributed to the effect of the hydrogen bond quantum nature with H+. SRS spectra of 2 M NaOH water solution with ice-VII and ice-VIII structures have been successfully obtained in forward and backward, respectively, as OH- greatly reduce the quantum nature of hydrogen bonds by neutralizing H+ in water. The hydrogen bond quantum nature is important for understanding isotope calibration test structure and isotopic effect.

Arrays of Regenerated Fiber Bragg Gratings in Non-Hydrogen-Loaded Photosensitive Fibers for High-Temperature Sensor Networks

PubMed Central

Lindner, Eric; Chojetztki, Christoph; Brueckner, Sven; Becker, Martin; Rothhardt, Manfred; Vlekken, Johan; Bartelt, Hartmut

2009-01-01

We report about the possibility of using regenerated fiber Bragg gratings generated in photosensitive fibers without applying hydrogen loading for high temperature sensor networks. We use a thermally induced regenerative process which leads to a secondary increase in grating reflectivity. This refractive index modification has shown to become more stable after the regeneration up to temperatures of 600 °C. With the use of an interferometric writing technique, it is possible also to generate arrays of regenerated fiber Bragg gratings for sensor networks. PMID:22408510

Predictive sensor method and apparatus

NASA Technical Reports Server (NTRS)

Nail, William L. (Inventor); Koger, Thomas L. (Inventor); Cambridge, Vivien (Inventor)

1990-01-01

A predictive algorithm is used to determine, in near real time, the steady state response of a slow responding sensor such as hydrogen gas sensor of the type which produces an output current proportional to the partial pressure of the hydrogen present. A microprocessor connected to the sensor samples the sensor output at small regular time intervals and predicts the steady state response of the sensor in response to a perturbation in the parameter being sensed, based on the beginning and end samples of the sensor output for the current sample time interval.

Sensitive hydrogen leak detector

DOEpatents

Myneni, Ganapati Rao

1999-01-01

A sensitive hydrogen leak detector system using passivation of a stainless steel vacuum chamber for low hydrogen outgassing, a high compression ratio vacuum system, a getter operating at 77.5 K and a residual gas analyzer as a quantitative hydrogen sensor.

Rare earth element abundances in presolar SiC

NASA Astrophysics Data System (ADS)

Ireland, T. R.; Ávila, J. N.; Lugaro, M.; Cristallo, S.; Holden, P.; Lanc, P.; Nittler, L.; Alexander, C. M. O'D.; Gyngard, F.; Amari, S.

2018-01-01

Individual isotope abundances of Ba, lanthanides of the rare earth element (REE) group, and Hf have been determined in bulk samples of fine-grained silicon carbide (SiC) from the Murchison CM2 chondrite. The analytical protocol involved secondary ion mass spectrometry with combined high mass resolution and energy filtering to exclude REE oxide isobars and Si-C-O clusters from the peaks of interest. Relative sensitivity factors were determined through analysis of NIST SRM reference glasses (610 and 612) as well as a trace-element enriched SiC ceramic. When normalised to chondrite abundances, the presolar SiC REE pattern shows significant deficits at Eu and Yb, which are the most volatile of the REE. The pattern is very similar to that observed for Group III refractory inclusions. The SiC abundances were also normalised to s-process model predictions for the envelope compositions of low-mass (1.5-3 M⊙) AGB stars with close-to-solar metallicities (Z = 0.014 and 0.02). The overall trace element abundances (excluding Eu and Yb) appear consistent with the predicted s-process patterns. The depletions of Eu and Yb suggest that these elements remained in the gas phase during the condensation of SiC. The lack of depletion in some other moderately refractory elements (like Ba), and the presence of volatile elements (e.g. Xe) indicates that these elements were incorporated into SiC by other mechanisms, most likely ion implantation.

Fabrication of mullite-bonded porous SiC ceramics from multilayer-coated SiC particles through sol-gel and in-situ polymerization techniques

NASA Astrophysics Data System (ADS)

Ebrahimpour, Omid

In this work, mullite-bonded porous silicon carbide (SiC) ceramics were prepared via a reaction bonding technique with the assistance of a sol-gel technique or in-situ polymerization as well as a combination of these techniques. In a typical procedure, SiC particles were first coated by alumina using calcined powder and alumina sol via a sol-gel technique followed by drying and passing through a screen. Subsequently, they were coated with the desired amount of polyethylene via an in-situ polymerization technique in a slurry phase reactor using a Ziegler-Natta catalyst. Afterward, the coated powders were dried again and passed through a screen before being pressed into a rectangular mold to make a green body. During the heating process, the polyethylene was burnt out to form pores at a temperature of about 500°C. Increasing the temperature above 800°C led to the partial oxidation of SiC particles to silica. At higher temperatures (above 1400°C) derived silica reacted with alumina to form mullite, which bonds SiC particles together. The porous SiC specimens were characterized with various techniques. The first part of the project was devoted to investigating the oxidation of SiC particles using a Thermogravimetric analysis (TGA) apparatus. The effects of particle size (micro and nano) and oxidation temperature (910°C--1010°C) as well as the initial mass of SiC particles in TGA on the oxidation behaviour of SiC powders were evaluated. To illustrate the oxidation rate of SiC in the packed bed state, a new kinetic model, which takes into account all of the diffusion steps (bulk, inter and intra particle diffusion) and surface oxidation rate, was proposed. Furthermore, the oxidation of SiC particles was analyzed by the X-ray Diffraction (XRD) technique. The effect of different alumina sources (calcined Al2O 3, alumina sol or a combination of the two) on the mechanical, physical, and crystalline structure of mullite-bonded porous SiC ceramics was studied in the

Computational investigation of single-wall carbon nanotube functionalized with palladium nanoclusters as hydrogen sulfide gas sensor

NASA Astrophysics Data System (ADS)

Bagherzadeh-Nobari, S.; Hosseini-Istadeh, K.; Kalantarinejad, R.; Elahi, S. M.; Shokri, A. A.

2018-03-01

Our aim is to study theoretically, the sensitivity of a hydrogen sulfide gas sensor, with regard to electrical conductance behavior. Our senor consists of a semiconductor single-wall carbon nanotube (SWCNT), functionalized with palladium nanoclusters, sandwiched between two gold electrodes. Initially, we have computed the optimized structure of the sensor, via molecular dynamic simulations. Then by using non-equilibrium Green's function method, combined with density functional theory, the electronic and transport properties of the sensor were calculated, and compared before and after adsorption of H2S gas, at different bias voltages. The highest sensitivity is achieved at 40 mV bias voltage. In this bias voltage, H2S gas adsorption causes a significant decrease of current, because as a result of charge transfer from the CNT and palladium nanoclusters, to H2S gas, majority carriers (electrons) decrease. The results show that CNT decorated with palladium nanoclusters can be a promising candidate in gas-sensorics.

Surface plasmon resonance-based fiber-optic hydrogen gas sensor utilizing palladium supported zinc oxide multilayers and their nanocomposite.

PubMed

Tabassum, Rana; Gupta, Banshi D

2015-02-10

We analyze surface plasmon resonance-based fiber-optic sensor for sensing of small concentrations of hydrogen gas in the visible region of the electromagnetic spectrum. One of the two probes considered has multilayers of zinc oxide (ZnO) and palladium (Pd) while the other has layer of their composite over a silver coated unclad core of the fiber. The analysis is carried out for different volume fractions of palladium nanoparticles dispersed in zinc oxide host material in the nanocomposite layer. For the analysis, a Maxwell-Garnett model is adopted for calculating the dielectric function of a ZnO:Pd nanocomposite having nanoparticles of dimensions smaller than the wavelength of radiation used. The effects of the volume fraction of the nanoparticles in the nanocomposite and the thickness of the nanocomposite layer on the figure of merit of the sensor have been studied. The film thickness of the layer and the volume fraction of nanoparticles in the ZnO:Pd nanocomposite layer have been optimized to achieve the maximum value of the figure of merit of the sensor. It has been found that the figure of merit of the sensing probe coated with ZnO:Pd nanocomposite is more than twofold of the sensing probe coated with multilayers of Pd and ZnO over a silver coated unclad core of the fiber; hence, the sensor with a nanocomposite layer works better than that with multilayers of zinc oxide and palladium. The sensor can be used for online monitoring and remote sensing of hydrogen gas.

SiC nanoparticles as potential carriers for biologically active substances

NASA Astrophysics Data System (ADS)

Guevara-Lora, Ibeth; Czosnek, Cezary; Smycz, Aleksandra; Janik, Jerzy F.; Kozik, Andrzej

2009-01-01

Silicon carbide SiC thanks to its many advantageous properties has found numerous applications in diverse areas of technology. In this regard, its nanosized forms often with novel properties have been the subject of intense research in recent years. The aim of this study was to investigate the binding of biologically active substances onto SiC nanopowders as a new approach to biomolecule immobilization in terms of their prospective applications in medicine or for biochemical detection. The SiC nanoparticles were prepared by a two-stage aerosol-assisted synthesis from neat hexamethyldisiloxane. The binding of several proteins (bovine serum albumin, high molecular weight kininogen, immunoglobulin G) on SiC particle surfaces was demonstrated at the levels of 1-2 nanograms per mg of SiC. These values were found to significantly increase after suitable chemical modifications of nanoparticle surfaces (by carbodiimide or 3-aminopropyltrietoxysilane treatment). The study of SiC biocompatibility showed a lack of cytotoxicity against macrophages-like cells below the concentration of 1 mg nanoparticles per mL. In summary, we demonstrated the successful immobilization of the selected substances on the SiC nanoparticles. These results including the cytotoxicity study make nano-SiC highly attractive for potential applications in medicine, biotechnology or molecular detection.

Fundamental Study of Tank with MgB2 Level Sensor for Transportation of Liquid Hydrogen

NASA Astrophysics Data System (ADS)

Maekawa, Kazuma; Takeda, Minoru; Matsuno, Yu; Fujikawa, Shizuichi; Kuroda, Tsuneo; Kumakura, Hiroaki

We are currently developing an external-heating-type superconducting magnesium diboride (MgB2) level sensor for a liquid hydrogen (LH2) tank. The aim of this study is to investigate the measuring current dependence of the level-detecting characteristics of the MgB2 level sensor for LH2 under a static condition which has not yet been clarified. It was found that the linear correlation coefficient was 0.99 or more, indicating high linearity, regardless of the measuring current at heater inputs of 3 W and 6 W. Moreover, there was no effect of self-heating by the measuring current and it was found that a current of up to 100 mA can be used.

The impact resistance of SiC and other mechanical properties of SiC and Si3N4

NASA Technical Reports Server (NTRS)

Bradt, R. C.

1984-01-01

Studies focused on the impact and mechanical behavior of SiC and Si3N4 at high temperatures are summarized. Instrumented Charpy impact testing is analyzed by a compliance method and related to strength; slow crack growth is related to processing, and creep is discussed. The transient nature of flaw populations during oxidation under load is emphasized for both SiC and Si3N4.

Radiolytic hydrogen generation at silicon carbide-water interfaces

NASA Astrophysics Data System (ADS)

Schofield, Jennifer; Reiff, Sarah C.; Pimblott, Simon M.; LaVerne, Jay A.

2016-02-01

While many of the proposed uses of SiC in the nuclear industry involve systems that are assumed to be dry, almost all materials have dissociated chemisorbed water associated with their surface, which can undergo chemistry in radiation fields. Silicon carbide α-phase and β-phase nanoparticles with water were irradiated with γ-rays and 5 MeV 4He ions followed by the determination of the production of molecular hydrogen, H2, and characterization of changes in the particle surface. The yields of H2 from SiC-water slurries were always greater than expected from a simple mixture rule indicating that the presence of SiC was influencing the production of H2 from water, probably through an energy transfer from the solid to liquid phase. Although the increase in H2 yields was modest, a decrease in the water mass percentage led to an increase in H2 yields, especially for very low amounts of water. Surface analysis techniques included diffuse reflectance infrared Fourier transform spectroscopy (DRIFT), nitrogen absorption with the Brunauer - Emmett - Teller (BET) methodology for surface area determination, X-ray diffraction (XRD), Raman spectroscopy, and X-ray photoelectron spectroscopy (XPS). Little change in the SiC surface was observed following radiolysis except for some conversion of β-phase SiC to the α-phase and the formation of SiO2 with He ion radiolysis.

Hydrogen sulfide as an oxygen sensor.

PubMed

Olson, Kenneth R

2015-02-10

Although oxygen (O2)-sensing cells and tissues have been known for decades, the identity of the O2-sensing mechanism has remained elusive. Evidence is accumulating that O2-dependent metabolism of hydrogen sulfide (H2S) is this enigmatic O2 sensor. The elucidation of biochemical pathways involved in H2S synthesis and metabolism have shown that reciprocal H2S/O2 interactions have been inexorably linked throughout eukaryotic evolution; there are multiple foci by which O2 controls H2S inactivation, and the effects of H2S on downstream signaling events are consistent with those activated by hypoxia. H2S-mediated O2 sensing has been demonstrated in a variety of O2-sensing tissues in vertebrate cardiovascular and respiratory systems, including smooth muscle in systemic and respiratory blood vessels and airways, carotid body, adrenal medulla, and other peripheral as well as central chemoreceptors. Information is now needed on the intracellular location and stoichometry of these signaling processes and how and which downstream effectors are activated by H2S and its metabolites. Development of specific inhibitors of H2S metabolism and effector activation as well as cellular organelle-targeted compounds that release H2S in a time- or environmentally controlled way will not only enhance our understanding of this signaling process but also provide direction for future therapeutic applications.

Low Activation Joining of SiC/SiC Composites for Fusion Applications: Modeling Thermal and Irradiation-induced Swelling Effects on Integrity of Ti3SiC2/SiC Joint

DOE Office of Scientific and Technical Information (OSTI.GOV)

Nguyen, Ba Nghiep; Henager, Charles H.; Kurtz, Richard J.

This work developed a continuum damage mechanics model that incorporates thermal expansion combined with irradiation-induced swelling effects to study the origin of cracking observed in recent irradiation experiments. Micromechanical modeling using an Eshelby-Mori-Tanaka approach was used to compute the thermoelastic properties of the Ti3SiC2/SiC joint needed for the model. In addition, a microstructural dual-phase Ti3SiC2/SiC model was developed to determine irradiation-induced swelling of the composite joint at a given temperature resulting from differential swelling of SiC and the Ti3SiC2 MAX phase. Three cases for the miniature torsion hourglass (THG) specimens containing a Ti3SiC2/SiC joint were analyzed corresponding to three irradiationmore » temperatures: 800oC, 500oC, and 400oC.« less

High Temperature Capacitive Pressure Sensor Employing a SiC Based Ring Oscillator

NASA Technical Reports Server (NTRS)

Meredith, Roger D.; Neudeck, Philip G.; Ponchak, George E.; Beheim, Glenn M.; Scardelletti, Maximilian; Jordan, Jennifer L.; Chen, Liang-Yu; Spry, David J.; Krawowski, Michael J.; Hunter, Gary W.

2011-01-01

In an effort to develop harsh environment electronic and sensor technologies for aircraft engine safety and monitoring, we have used capacitive-based pressure sensors to shift the frequency of a SiC-electronics-based oscillator to produce a pressure-indicating signal that can be readily transmitted, e.g. wirelessly, to a receiver located in a more benign environment. Our efforts target 500 C, a temperature well above normal operating conditions of commercial circuits but within areas of interest in aerospace engines, deep mining applications and for future missions to the Venus atmosphere. This paper reports for the first time a ring oscillator circuit integrated with a capacitive pressure sensor, both operating at 500 C. This demonstration represents a significant step towards a wireless pressure sensor that can operate at 500 C and confirms the viability of 500 C electronic sensor systems.

Sensitive hydrogen leak detector

DOEpatents

Myneni, G.R.

1999-08-03

A sensitive hydrogen leak detector system is described which uses passivation of a stainless steel vacuum chamber for low hydrogen outgassing, a high compression ratio vacuum system, a getter operating at 77.5 K and a residual gas analyzer as a quantitative hydrogen sensor. 1 fig.

Effects of SiC on Properties of Cu-SiC Metal Matrix Composites

NASA Astrophysics Data System (ADS)

Efe, G. Celebi; Altinsoy, I.; Ipek, M.; Zeytin, S.; Bindal, C.

2011-12-01

This paper was focused on the effects of particle size and distribution on some properties of the SiC particle reinforced Cu composites. Copper powder produced by cementation method was reinforced with SiC particles having 1 and 30 μm particle size and sintered at 700 °C. SEM studies showed that SiC particles dispersed in copper matrix homogenously. The presence of Cu and SiC components in composites were verified by XRD analysis technique. The relative densities of Cu-SiC composites determined by Archimedes' principle are ranged from 96.2% to 90.9% for SiC with 1 μm particle size, 97.0 to 95.0 for SiC with 30 μm particle size. Measured hardness of sintered compacts varied from 130 to 155 HVN for SiC having 1 μm particle size, 188 to 229 HVN for SiC having 1 μm particle size. Maximum electrical conductivity of test materials was obtained as 80.0% IACS (International annealed copper standard) for SiC with 1 μm particle size and 83.0% IACS for SiC with 30 μm particle size.

Slush hydrogen liquid level system

NASA Technical Reports Server (NTRS)

Hamlet, J. F.; Adams, R. G.

1972-01-01

A discrete capacitance liquid level system developed is specifically for slush hydrogen, but applicable to LOX, LN2, LH2, and RP1 without modification is described. The signal processing portion of the system is compatible with conventional liquid level sensors. Compatibility with slush hydrogen was achieved by designing the sensor with adequate spacing, while retaining the electrical characteristics of conventional sensors. Tests indicate excellent stability of the system over a temperature range of -20 C to 70 C for the circuit and to cryogenic temperatures of the sensor. The sensor was tested up to 40 g's rms random vibration with no damage to the sensor. Operation with 305 m of cable between the sensor and signal processor was demonstrated. It is concluded that this design is more than adequate for most flight and ground applications.

Energy Systems Sensor Laboratory | Energy Systems Integration Facility |

Science.gov Websites

NREL Sensor Laboratory Energy Systems Sensor Laboratory The Energy Systems Integration Facility's Energy Systems Sensor Laboratory is designed to support research, development, testing, and evaluation of advanced hydrogen sensor technologies to support the needs of the emerging hydrogen

Sensors Increase Productivity in Harsh Environments

NASA Technical Reports Server (NTRS)

2008-01-01

California's San Juan Capistrano-based Endevco Corporation licensed three patents covering high-temperature, harsh-environment silicon carbide (Si-C) pressure sensors from Glenn Research Center. The company is exploring their use in government markets, as well as in commercial markets, including commercial jet testing, deep well drilling applications where pressure and temperature increase with drilling depth, and in automobile combustion chambers.

Velcro-Inspired SiC Fuzzy Fibers for Aerospace Applications.

PubMed

Hart, Amelia H C; Koizumi, Ryota; Hamel, John; Owuor, Peter Samora; Ito, Yusuke; Ozden, Sehmus; Bhowmick, Sanjit; Syed Amanulla, Syed Asif; Tsafack, Thierry; Keyshar, Kunttal; Mital, Rahul; Hurst, Janet; Vajtai, Robert; Tiwary, Chandra Sekhar; Ajayan, Pulickel M

2017-04-19

The most recent and innovative silicon carbide (SiC) fiber ceramic matrix composites, used for lightweight high-heat engine parts in aerospace applications, are woven, layered, and then surrounded by a SiC ceramic matrix composite (CMC). To further improve both the mechanical properties and thermal and oxidative resistance abilities of this material, SiC nanotubes and nanowires (SiCNT/NWs) are grown on the surface of the SiC fiber via carbon nanotube conversion. This conversion utilizes the shape memory synthesis (SMS) method, starting with carbon nanotube (CNT) growth on the SiC fiber surface, to capitalize on the ease of dense surface morphology optimization and the ability to effectively engineer the CNT-SiC fiber interface to create a secure nanotube-fiber attachment. Then, by converting the CNTs to SiCNT/NWs, the relative morphology, advantageous mechanical properties, and secure connection of the initial CNT-SiC fiber architecture are retained, with the addition of high temperature and oxidation resistance. The resultant SiCNT/NW-SiC fiber can be used inside the SiC ceramic matrix composite for a high-heat turbo engine part with longer fatigue life and higher temperature resistance. The differing sides of the woven SiCNT/NWs act as the "hook and loop" mechanism of Velcro but in much smaller scale.

Highly sensitive hydrogen sulfide (H2 S) gas sensors from viral-templated nanocrystalline gold nanowires

NASA Astrophysics Data System (ADS)

Moon, Chung Hee; Zhang, Miluo; Myung, Nosang V.; Haberer, Elaine D.

2014-04-01

A facile, site-specific viral-templated assembly method was used to fabricate sensitive hydrogen sulfide (H2S) gas sensors at room temperature. A gold-binding M13 bacteriophage served to organize gold nanoparticles into linear arrays which were used as seeds for subsequent nanowire formation through electroless deposition. Nanowire widths and densities within the sensors were modified by electroless deposition time and phage concentration, respectively, to tune device resistance. Chemiresistive H2S gas sensors with superior room temperature sensing performance were produced with sensitivity of 654%/ppmv, theoretical lowest detection limit of 2 ppbv, and 70% recovery within 9 min for 0.025 ppmv. The role of the viral template and associated gold-binding peptide was elucidated by removing organics using a short O2 plasma treatment followed by an ethanol dip. The template and gold-binding peptide were crucial to electrical and sensor performance. Without surface organics, the resistance fell by several orders of magnitude, the sensitivity dropped by more than a factor of 100 to 6%/ppmv, the lower limit of detection increased, and no recovery was detected with dry air flow. Viral templates provide a novel, alternative fabrication route for highly sensitive, nanostructured H2S gas sensors.

Electrical Impact of SiC Structural Crystal Defects on High Electric Field Devices

NASA Technical Reports Server (NTRS)

Neudeck, Philip G.

1999-01-01

Commercial epilayers are known to contain a variety of crystallographic imperfections. including micropipes, closed core screw dislocations. low-angle boundaries, basal plane dislocations, heteropolytypic inclusions, and non-ideal surface features like step bunching and pits. This paper reviews the limited present understanding of the operational impact of various crystal defects on SiC electrical devices. Aside from micropipes and triangular inclusions whose densities have been shrinking towards manageably small values in recent years, many of these defects appear to have little adverse operational and/or yield impact on SiC-based sensors, high-frequency RF, and signal conditioning electronics. However high-power switching devices used in power management and distribution circuits have historically (in silicon experience) demanded the highest material quality for prolonged safe operation, and are thus more susceptible to operational reliability problems that arise from electrical property nonuniformities likely to occur at extended crystal defects. A particular emphasis is placed on the impact of closed-core screw dislocations on high-power switching devices, because these difficult to observe defects are present in densities of thousands per cm,in commercial SiC epilayers. and their reduction to acceptable levels seems the most problematic at the present time.

Joule heating a palladium nanowire sensor for accelerated response and recovery to hydrogen gas.

PubMed

Yang, Fan; Taggart, David K; Penner, Reginald M

2010-07-05

The properties of a single heated palladium (Pd) nanowire for the detection of hydrogen gas (H(2)) are explored. In these experiments, a Pd nanowire, 48-98 microm in length, performs three functions in parallel: 1) Joule self-heating is used to elevate the nanowire temperature by up to 128 K, 2) the 4-contact wire resistance in the absence of H(2) is used to measure its temperature, and 3) the nanowire resistance in the presence of H(2) is correlated with its concentration, allowing it to function as a H(2) sensor. Compared with the room-temperature response of a Pd nanowire, the response of the heated nanowire to hydrogen is altered in two ways: First, the resistance change (DeltaR/R(0)) induced by H(2) exposure at any concentration is reduced by a factor of up to 30 and second, the rate of the resistance change - observed at the beginning ("response") and at the end ("recovery") of a pulse of H(2) - is increased by more than a factor of 50 at some H(2) concentrations. Heating nearly eliminates the retardation of response and recovery seen from 1-2% H(2), caused by the alpha --> beta phase transition of PdH(x), a pronounced effect for nanowires at room temperature. The activation energies associated with sensor response and recovery are measured and interpreted.

First fluorescent sensor for fluoride based on 2-ureido-4[1H]-pyrimidinone quadruple hydrogen-bonded AADD supramolecular assembly.

PubMed

Zhao, Yao-Peng; Zhao, Chun-Chang; Wu, Li-Zhu; Zhang, Li-Ping; Tung, Chen-Ho; Pan, Yuan-Jiang

2006-03-03

A simple, highly selective, neutral, fluorescent sensor for fluoride anions is reported. It is based on 2-ureido-4[1H]-pyrimidinone quadruple hydrogen-bonded AADD supramolecular assembly, and its assembling and disassembling processes are also able to respond to external stimuli reversibly.

SiC (SCS-6) Fiber Reinforced-Reaction Formed SiC Matrix Composites: Microstructure and Interfacial Properties

NASA Technical Reports Server (NTRS)

Singh, M.; Dickerson, R. M.; Olmstead, Forrest A.; Eldridge, J. I.

1997-01-01

Microstructural and interfacial characterization of unidirectional SiC (SCS-6) fiber reinforced-reaction formed SiC (RFSC) composites has been carried out. Silicon-1.7 at.% molybdenum alloy was used as the melt infiltrant, instead of pure silicon, to reduce the activity of silicon in the melt as well as to reduce the amount of free silicon in the matrix. Electron microprobe analysis was used to evaluate the microstructure and phase distribution in these composites. The matrix is SiC with a bi-modal grain-size distribution and small amounts of MoSi2, silicon, and carbon. Fiber push-outs tests on these composites showed that a desirably low interfacial shear strength was achieved. The average debond shear stress at room temperature varied with specimen thickness from 29 to 64 MPa, with higher values observed for thinner specimens. Initial frictional sliding stresses showed little thickness dependence with values generally close to 30 MPa. Push-out test results showed very little change when the test temperature was increased to 800 C from room temperature, indicating an absence of significant residual stresses in the composite.

Silicon carbide novel optical sensor for combustion systems and nuclear reactors

NASA Astrophysics Data System (ADS)

Lim, Geunsik; Kar, Aravinda

2014-09-01

Crystalline silicon carbide is a wide bandgap semiconductor material with excellent optical properties, chemical inertness, radiation hardness and high mechanical strength at high temperatures. It is an excellent material platform for sensor applications in harsh environments such as combustion systems and nuclear reactors. A laser doping technique is used to fabricate SiC sensors for different combustion gases such as CO2, CO, NO and NO2. The sensor operates based on the principle of semiconductor optics, producing optical signal in contrast to conventional electrical sensors that produces electrical signal. The sensor response is measured with a low power He-Ne or diode laser.

The Effect of Fiber Architecture on Matrix Cracking in Sic/sic Cmc's

NASA Technical Reports Server (NTRS)

Morscher, Gregory N.

2005-01-01

Applications incorporating silicon carbide fiber reinforced silicon carbide matrix composites (CMC's) will require a wide range of fiber architectures in order to fabricate complex shape. The stress-strain response of a given SiC/SiC system for different architectures and orientations will be required in order to design and effectively life-model future components. The mechanism for non-linear stress-strain behavior in CMC's is the formation and propagation of bridged-matrix cracks throughout the composite. A considerable amount of understanding has been achieved for the stress-dependent matrix cracking behavior of SiC fiber reinforced SiC matrix systems containing melt-infiltrated Si. This presentation will outline the effect of 2D and 3D architectures and orientation on stress-dependent matrix-cracking and how this information can be used to model material behavior and serve as the starting point foe mechanistic-based life-models.

Ag Transport Through Non-Irradiated and Irradiated SiC

DOE Office of Scientific and Technical Information (OSTI.GOV)

Szlufarska, Izabela; Morgan, Dane; Blanchard, James

Silicon carbide is the main barrier to diffusion of fission products in the current design of TRistuctural ISOtropic (TRISO) coated fuel particles, and Ag is one of the few fission products that have been shown to escape through this barrier. Because the SiC coating in TRISO is exposed to radiation throughout the lifetime of the fuel, understanding of how radiation changes the transport of the fission products is essential for the safety of the reactor. The goals of this project are: (i) to determine whether observed variation in integral release measurements of Ag through SiC can be explained by differencesmore » in grain size and grain boundary (GB) types among the samples; (2) to identify the effects of irradiation on diffusion of Ag through SiC; (3) to discover phenomena responsible for significant solubility of Ag in polycrystalline SiC. To address these goals, we combined experimental analysis of SiC diffusion couples with modeling studies of diffusion mechanisms through bulk and GBs of this material. Comparison between results obtained for pristine and irradiated samples brings in insights into the effects of radiation on Ag transport.« less

Safe and simple detection of sparse hydrogen by Pd-Au alloy/air based 1D photonic crystal sensor

NASA Astrophysics Data System (ADS)

Mitra, S.; Biswas, T.; Chattopadhyay, R.; Ghosh, J.; Bysakh, S.; Bhadra, S. K.

2016-11-01

A simple integrated hydrogen sensor using Pd-Au alloy/air based one dimensional photonic crystal with an air defect layer is theoretically modeled. Structural parameters of the photonic crystal are delicately scaled to generate photonic band gap frequencies in a visible spectral regime. An optimized defect thickness permits a localized defect mode operating at a frequency within the photonic band gap region. Hydrogen absorption causes modification in the band gap characteristics due to variation of refractive index and lattice parameters of the alloy. As a result, the transmission peak appeared due to the resonant defect state gets shifted. This peak shifting is utilized to detect sparse amount of hydrogen present in the surrounding environment. A theoretical framework is built to calculate the refractive index profile of hydrogen loaded alloy using density functional theory and Bruggeman's effective medium approximation. The calculated refractive index variation of Pd3Au alloy film due to hydrogen loading is verified experimentally by measuring the reflectance characteristics. Lattice expansion properties of the alloy are studied through X-ray diffraction analyses. The proposed structure shows about 3 nm red shift of the transmission peak for a rise of 1% atomic hydrogen concentration in the alloy.

Saturn V S-IC (First) Stage

NASA Technical Reports Server (NTRS)

2004-01-01

This cutaway illustration shows the Saturn V S-IC (first) stage with detailed callouts of the components. The S-IC Stage is 138 feet long and 33 feet in diameter, producing 7,500,000 pounds of thrust through five F-1 engines that are powered by liquid oxygen and kerosene. Four of the engines are mounted on an outer ring and gimbal for control purposes. The fifth engine is rigidly mounted in the center. When ignited, the roar produced by the five engines equals the sound of 8,000,000 hi-fi sets.

Sensors and devices containing ultra-small nanowire arrays

DOEpatents

Xiao, Zhili

2014-09-23

A network of nanowires may be used for a sensor. The nanowires are metallic, each nanowire has a thickness of at most 20 nm, and each nanowire has a width of at most 20 nm. The sensor may include nanowires comprising Pd, and the sensor may sense a change in hydrogen concentration from 0 to 100%. A device may include the hydrogen sensor, such as a vehicle, a fuel cell, a hydrogen storage tank, a facility for manufacturing steel, or a facility for refining petroleum products.

Sensors and devices containing ultra-small nanowire arrays

DOEpatents

Xiao, Zhili

2017-04-11

A network of nanowires may be used for a sensor. The nanowires are metallic, each nanowire has a thickness of at most 20 nm, and each nanowire has a width of at most 20 nm. The sensor may include nanowires comprising Pd, and the sensor may sense a change in hydrogen concentration from 0 to 100%. A device may include the hydrogen sensor, such as a vehicle, a fuel cell, a hydrogen storage tank, a facility for manufacturing steel, or a facility for refining petroleum products.

A widely tunable, near-infrared laser-based trace gas sensor for hydrogen cyanide (HCN) detection in exhaled breath

NASA Astrophysics Data System (ADS)

Azhar, M.; Mandon, J.; Neerincx, A. H.; Liu, Z.; Mink, J.; Merkus, P. J. F. M.; Cristescu, S. M.; Harren, F. J. M.

2017-11-01

A compact, cost-effective sensor is developed for detection of hydrogen cyanide (HCN) in exhaled breath within seconds. For this, an off-axis integrated cavity output spectroscopy setup is combined with a widely tunable compact near-infrared laser (tunability 1527-1564 nm). For HCN a detection sensitivity has been obtained of 8 ppbv in nitrogen (within 1 s), equal to a noise equivalent absorption sensitivity of 1.9 × 10-9 cm-1 Hz-1/2. With this sensor we demonstrated the presence of HCN in exhaled breath; its detection could be a good indicator for bacterial lung infection. Due to its compact, cost-effective and user-friendly design, this laser-based sensor has the potential to be implemented in future clinical applications.

Amorphization resistance of nano-engineered SiC under heavy ion irradiation

NASA Astrophysics Data System (ADS)

Imada, Kenta; Ishimaru, Manabu; Xue, Haizhou; Zhang, Yanwen; Shannon, Steven C.; Weber, William J.

2016-09-01

Silicon carbide (SiC) with a high-density of planar defects (hereafter, 'nano-engineered SiC') and epitaxially-grown single-crystalline 3C-SiC were simultaneously irradiated with Au ions at room temperature, in order to compare their relative resistance to radiation-induced amorphization. It was found that the local threshold dose for amorphization is comparable for both samples under 2 MeV Au ion irradiation; whereas, nano-engineered SiC exhibits slightly greater radiation tolerance than single crystalline SiC under 10 MeV Au irradiation. Under 10 MeV Au ion irradiation, the dose for amorphization increased by about a factor of two in both nano-engineered and single crystal SiC due to the local increase in electronic energy loss that enhanced dynamic recovery.

Si/C hybrid nanostructures for Li-ion anodes: An overview

NASA Astrophysics Data System (ADS)

Terranova, Maria Letizia; Orlanducci, Silvia; Tamburri, Emanuela; Guglielmotti, Valeria; Rossi, Marco

2014-01-01

This review article summarizes recent and increasing efforts in the development of novel Li ion cell anode nanomaterials based on the coupling of C with Si. The rationale behind such efforts is based on the fact that the Si-C coupling realizes a favourable combination of the two materials properties, such as the high lithiation capacity of Si and the mechanical and conductive properties of C, making Si/C hybrid nanomaterials the ideal candidates for innovative and improved Li-ion anodes. Together with an overview of the methodologies proposed in the last decade for material preparation, a discussion on relationship between organization at the nanoscale of the hybrid Si/C systems and battery performances is given. An emerging indication is that the enhancement of the batteries efficiency in terms of mass capacity, energy density and cycling stability, resides in the ability to arrange Si/C bi-component nanostructures in pre-defined architectures. Starting from the results obtained so far, this paper aims to indicate some emerging directions and to inspire promising routes to optimize fabrication of Si/C nanomaterials and engineering of Li-ion anodes structures. The use of Si/C hybrid nanostructures could represents a viable and effective solution to the foreseen limits of present lithium ion technology.

A SiC MOSFET Based Inverter for Wireless Power Transfer Applications

DOE Office of Scientific and Technical Information (OSTI.GOV)

Onar, Omer C; Chinthavali, Madhu Sudhan; Campbell, Steven L

2014-01-01

In a wireless power transfer (WPT) system, efficiency of the power conversion stages is crucial so that the WPT technology can compete with the conventional conductive charging systems. Since there are 5 or 6 power conversion stages, each stage needs to be as efficient as possible. SiC inverters are crucial in this case; they can handle high frequency operation and they can operate at relatively higher temperatures resulting in reduces cost and size for the cooling components. This study presents the detailed power module design, development, and fabrication of a SiC inverter. The proposed inverter has been tested at threemore » center frequencies that are considered for the WPT standardization. Performance of the inverter at the same target power transfer level is analyzed along with the other system components. In addition, another SiC inverter has been built in authors laboratory by using the ORNL designed and developed SiC modules. It is shown that the inverter with ORNL packaged SiC modules performs simular to that of the inverter having commercially available SiC modules.« less

Selective detection of vapor phase hydrogen peroxide with phthalocyanine chemiresistors.

PubMed

Bohrer, Forest I; Colesniuc, Corneliu N; Park, Jeongwon; Schuller, Ivan K; Kummel, Andrew C; Trogler, William C

2008-03-26

The use of hydrogen peroxide as a precursor to improvised explosives has made its detection a topic of critical importance. Chemiresistor arrays comprised of 50 nm thick films of metallophthalocyanines (MPcs) are redox selective vapor sensors of hydrogen peroxide. Hydrogen peroxide is shown to decrease currents in cobalt phthalocyanine sensors while it increases currents in nickel, copper, and metal-free phthalocyanine sensors; oxidation and reduction of hydrogen peroxide via catalysis at the phthalocyanine surface are consistent with the pattern of sensor responses. This represents the first example of MPc vapor sensors being oxidized and reduced by the same analyte by varying the metal center. Consequently, differential analysis by redox contrast with catalytic amplification using a small array of sensors may be used to uniquely identify peroxide vapors. Metallophthalocyanine chemiresistors represent an improvement over existing peroxide vapor detection technologies in durability and selectivity in a greatly decreased package size.

Solar Water Splitting Utilizing a SiC Photocathode, a BiVO4 Photoanode, and a Perovskite Solar Cell.

PubMed

Iwase, Akihide; Kudo, Akihiko; Numata, Youhei; Ikegami, Masashi; Miyasaka, Tsutomu; Ichikawa, Naoto; Kato, Masashi; Hashimoto, Hideki; Inoue, Haruo; Ishitani, Osamu; Tamiaki, Hitoshi

2017-11-23

We have successfully demonstrated solar water splitting using a newly fabricated photoelectrochemical system with a Pt-loaded SiC photocathode, a CoO x -loaded BiVO 4 photoanode, and a perovskite solar cell. Detection of the evolved H 2 and O 2 with a 100 % Faradaic efficiency indicates that the observed photocurrent was used for water splitting. The solar-to-hydrogen (STH) efficiency was 0.55 % under no additional bias conditions. © 2017 Wiley-VCH Verlag GmbH & Co. KGaA, Weinheim.

Annite stability revised. 1. Hydrogen-sensor data for the reaction annite = sanidine + magnetite + H2

NASA Astrophysics Data System (ADS)

Dachs, E.

1994-08-01

In P - T - log fO2 space, the stability of annite (ideally KFe{3/2+}(OH)2AlSi3O10) at high fO2 (low fH2) is limited by the reaction: annite = sanidine + magnetite + H2. Using the hydrogen-sensor technique, the equilibrium fH2 of this reaction was measured between 500 and 800° C at 2.8 kbar in 50° C intervals. Microbrobe analyses of the reacted annite+sanidine+magnetite mixtures show that tetrahedral positions of annite have a lower Si/Al ratio than the ideal value of 3/1. Silicon decreases from ˜2.9 per formula unit at low temperatures to ˜2.76 at high temperatures. As determined by Mössbauer spectroscopy in three experimental runs, the Fe3+ content of annite in the equilibrium assemblage is 11%±3. A least squares fit to the hydrogensensor data gives Δ H {R/0} = 50.269 ± 3.987 kJ and Δ S {R/0} = 83.01 ± 4.35 J/K for equilibrium (1). The hydrogene-sensor data are consistent with temperature half brackets determined in the classical way along the nickel-nickel oxide (NNO) and quartz-fayalite-magnetite (QFM) buffers with a mixture of annite+sanidine+magnetite for control. Compared to published oxygen buffer reversals, agreement is only found at high temperature and possible reasons for that discrepancy are discussed. The resulting slope of equilibrium (1) in log fO2 - T dimensions is considerably steeper than previously determined and between 400 and 800°C only intersects with the QFM buffer curve. Based on the hydrogen-sensor data and on the thermodynamic dataset of Berman (1988, and TWEEQ data base) for sanidine, magnetite and H2, the deduced standard-state properties of annite are: H {f/0}=-5127.376±5.279 kJ and S 0=422.84±5.29 J/(mol K). From the recently published unit cell refinements of annites and their Fe3+ contents, determined by Mössbauer spectroscopy (Redhammer et al. 1993), the molar volume of pure annite was constrained as 15.568±0.030 J/bar. A revised stability field for annite is presented, calculated between 400 and 800°C.

Durability Evaluation of a Thin Film Sensor System With Enhanced Lead Wire Attachments on SiC/SiC Ceramic Matrix Composites

NASA Technical Reports Server (NTRS)

Lei, Jih-Fen; Kiser, J. Douglas; Singh, Mrityunjay; Cuy, Mike; Blaha, Charles A.; Androjna, Drago

2000-01-01

An advanced thin film sensor system instrumented on silicon carbide (SiC) fiber reinforced SiC matrix ceramic matrix composites (SiC/SiC CMCs), was evaluated in a Mach 0.3 burner rig in order to determine its durability to monitor material/component surface temperature in harsh environments. The sensor system included thermocouples in a thin film form (5 microns thick), fine lead wires (75 microns diameter), and the bonds between these wires and the thin films. Other critical components of the overall system were the heavy, swaged lead wire cable (500 microns diameter) that contained the fine lead wires and was connected to the temperature readout, and ceramic attachments which were bonded onto the CMCs for the purpose of securing the lead wire cables, The newly developed ceramic attachment features a combination of hoops made of monolithic SiC or SiC/SiC CMC (which are joined to the test article) and high temperature ceramic cement. Two instrumented CMC panels were tested in a burner rig for a total of 40 cycles to 1150 C (2100 F). A cycle consisted of rapid heating to 1150 C (2100 F), a 5 minute hold at 1150 C (2100 F), and then cooling down to room temperature in 2 minutes. The thin film sensor systems provided repeatable temperature measurements for a maximum of 25 thermal cycles. Two of the monolithic SiC hoops debonded during the sensor fabrication process and two of the SiC/SiC CMC hoops failed during testing. The hoops filled with ceramic cement, however, showed no sign of detachment after 40 thermal cycle test. The primary failure mechanism of this sensor system was the loss of the fine lead wire-to-thin film connection, which either due to detachment of the fine lead wires from the thin film thermocouples or breakage of the fine wire.

SIC mirrors polishing

NASA Astrophysics Data System (ADS)

Rodolfo, J.; Ruch, E.; Tarreau, M.; Merceron, J.-M.; Ferré, J.; Rousselet, N.; Leplan, H.; Geyl, R.; Harnisch, B.

2017-11-01

Silicon Carbide is a material of high interest in the design and manufacturing of space telescopes, thanks to its mechanical and thermal properties. Since many years, Reosc has gathered a large experience in the polishing, testing, integration and coating of large size Silicon Carbide mirrors as well as in the integration of full SiC TMAs.

Transfer of Graphene Layers Grown on SiC Wafers to Other Substrates and Their Integration into Field Effect Transistors

NASA Astrophysics Data System (ADS)

Unarunotai, Sakulsuk; Murata, Yuya; Chialvo, Cesar; Kim, Hoon-Sik; MacLaren, Scott; Mason, Nadya; Petrov, Ivan; Rogers, John

2010-03-01

An approach to produce graphene films by epitaxial growth on silicon carbide substrate is promising, but its current implementation requires the use of SiC as the device substrate. We present a simple method for transferring epitaxial sheets of graphene on SiC to other substrates. The graphene was grown on the (0001) face of 6H-SiC by thermal annealing in a hydrogen atmosphere. Transfer was accomplished using a peeling process with a bilayer film of Gold/polyimide, to yield graphene with square millimeters of coverage on the target substrate. Back gated field-effect transistors fabricated on oxidized silicon substrates with Cr/Au as source-drain electrodes exhibited ambipolar characteristics with hole mobilities of ˜100 cm^2/V-s, and negligible influence of resistance at the contacts. This work was supported by the U.S. DOE, under Award No. DE-FG02-07ER46471, through the Frederick Seitz Materials Research Laboratory at the University of Illinois at Urbana-Champaign.

Additive Manufacturing of SiC Based Ceramics and Ceramic Matrix Composites

NASA Technical Reports Server (NTRS)

Halbig, Michael Charles; Singh, Mrityunjay

2015-01-01

Silicon carbide (SiC) ceramics and SiC fiber reinforcedSiC ceramic matrix composites (SiCSiC CMCs) offer high payoff as replacements for metals in turbine engine applications due to their lighter weight, higher temperature capability, and lower cooling requirements. Additive manufacturing approaches can offer game changing technologies for the quick and low cost fabrication of parts with much greater design freedom and geometric complexity. Four approaches for developing these materials are presented. The first two utilize low cost 3D printers. The first uses pre-ceramic pastes developed as feed materials which are converted to SiC after firing. The second uses wood containing filament to print a carbonaceous preform which is infiltrated with a pre-ceramic polymer and converted to SiC. The other two approaches pursue the AM of CMCs. The first is binder jet SiC powder processing in collaboration with rp+m (Rapid Prototyping+Manufacturing). Processing optimization was pursued through SiC powder blending, infiltration with and without SiC nano powder loading, and integration of nanofibers into the powder bed. The second approach was laminated object manufacturing (LOM) in which fiber prepregs and laminates are cut to shape by a laser and stacked to form the desired part. Scanning electron microscopy was conducted on materials from all approaches with select approaches also characterized with XRD, TGA, and bend testing.

Field-rugged sensitive hydrogen peroxide sensor based on tunable diode laser absorption spectroscopy (TDLAS)

NASA Astrophysics Data System (ADS)

Frish, M. B.; Morency, J. R.; Laderer, M. C.; Wainner, R. T.; Parameswaran, K. R.; Kessler, W. J.; Druy, M. A.

2010-04-01

This paper reports the development and initial testing of a field-portable sensor for monitoring hydrogen peroxide (H2O2) and water (H2O) vapor concentrations during building decontamination after accidental or purposeful exposure to hazardous biological materials. During decontamination, a sterilization system fills ambient air with water and peroxide vapor to near-saturation. The peroxide concentration typically exceeds several hundred ppm for tens of minutes, and subsequently diminishes below 1 ppm. The H2O2/ H2O sensor is an adaptation of a portable gas-sensing platform based on Tunable Diode Laser Absorption Spectroscopy (TDLAS) technology. By capitalizing on its spectral resolution, the TDLAS analyzer isolates H2O2 and H2O spectral lines to measure both vapors using a single laser source. It offers a combination of sensitivity, specificity, fast response, dynamic range, linearity, ease of operation and calibration, ruggedness, and portability not available in alternative H2O2 detectors. The H2O2 range is approximately 0- 5,000 ppm. The autonomous and rugged instrument provides real-time data. It has been tested in a closed-loop liquid/vapor equilibrium apparatus and by comparison against electrochemical sensors.

SiC: filter for extreme ultraviolet

NASA Astrophysics Data System (ADS)

Mitrofanov, Alexander V.; Pudonin, Fedor A.; Zhitnik, Igor A.

1994-09-01

It is proposed to use thin films of silicon carbide as Extreme Ultraviolet bandpass filters transparent within 135-304 A band and with excellent cutoff blocking of the strong L(subscript (alpha) ) 1216 A line radiation. Mesh or particle track porous membrane supporting 200-800 A thickness SiC filters have been made by RF sputtering techniques. We describe the design and performance of these filters. Such type SiC filter was used in front of the microchannel plate detector of the TEREK X-Ray Telescope mounted on the Solar Observatory CORONAS-I which was successfully launched on March 2, 1994.

Safety, Codes, and Standards | Hydrogen and Fuel Cells | NREL

Science.gov Websites

to develop and test hydrogen sensor technologies. In addition to partnering with organizations in the and Validation of Prototype Hydrogen Sensors, P.K. Sekhar, J. Zhou, M.B. Post, L. Woo, W.J. Buttner , M.B. Post, C. Rivkin, R. Burgess, and W.J. Buttner, International Journal of Hydrogen Energy (March

Wear Behaviour of Al-6061/SiC Metal Matrix Composites

NASA Astrophysics Data System (ADS)

Mishra, Ashok Kumar; Srivastava, Rajesh Kumar

2017-04-01

Aluminium Al-6061 base composites, reinforced with SiC particles having mesh size of 150 and 600, which is fabricated by stir casting method and their wear resistance and coefficient of friction has been investigated in the present study as a function of applied load and weight fraction of SiC varying from 5, 10, 15, 20, 25, 30, 35 and 40 %. The dry sliding wear properties of composites were investigated by using Pin-on-disk testing machine at sliding velocity of 2 m/s and sliding distance of 2000 m over a various loads of 10, 20 and 30 N. The result shows that the reinforcement of the metal matrix with SiC particulates up to weight percentage of 35 % reduces the wear rate. The result also show that the wear of the test specimens increases with the increasing load and sliding distance. The coefficient of friction slightly decreases with increasing weight percentage of reinforcements. The wear surfaces are examined by optical microscopy which shows that the large grooved regions and cavities with ceramic particles are found on the worn surface of the composite alloy. This indicates an abrasive wear mechanism, which is essentially a result of hard ceramic particles exposed on the worn surfaces. Further, it was found from the experimentation that the wear rate decreases linearly with increasing weight fraction of SiC and average coefficient of friction decreases linearly with increasing applied load, weight fraction of SiC and mesh size of SiC. The best result has been obtained at 35 % weight fraction and 600 mesh size of SiC.

Observations of Ag diffusion in ion implanted SiC

DOE PAGES

Gerczak, Tyler J.; Leng, Bin; Sridharan, Kumar; ...

2015-03-17

The nature and magnitude of Ag diffusion in SiC has been a topic of interest in connection with the performance of tristructural isotropic (TRISO) coated particle fuel for high temperature gas-cooled nuclear reactors. Ion implantation diffusion couples have been revisited to continue developing a more complete understanding of Ag fission product diffusion in SiC. Ion implantation diffusion couples fabricated from single crystal 4H-SiC and polycrystalline 3C-SiC substrates and exposed to 1500–1625°C, were investigated in this study by transmission electron microscopy and secondary ion mass spectrometry (SIMS). The high dynamic range of SIMS allowed for multiple diffusion régimes to be investigated,more » including enhanced diffusion by implantation-induced defects and grain boundary (GB) diffusion in undamaged SiC. Lastly, estimated diffusion coefficients suggest GB diffusion in bulk SiC does not properly describe the release observed from TRISO fuel.« less

Advanced Capacitor with SiC for High Temperature Applications

NASA Astrophysics Data System (ADS)

Tsao, B. H.; Ramalingam, M. L.; Bhattacharya, R. S.; Carr, Sandra Fries

1994-07-01

An advanced capacitor using SiC as the dielectric material has been developed for high temperature, high power, and high density electronic components for aircraft and aerospace application. The conventional capacitor consists of a large number of metallized polysulfone films that are arranged in parallel and enclosed in a sealed metal case. However, problems with electrical failure, thermal failure, and dielectric flow were experienced by Air Force suppliers for the component and subsystem for lack of suitable properties of the dielectric material. The high breakdown electrical field, high thermal conductivity, and high temperature operational resistance of SiC compared to similar properties of the conventional ceramic and polymer capacitor would make it a better choice for a high temperature, and high power capacitor. The quality of the SiC film was evaluated. The electrical parameters, such as the capacitance, dissipation factor, equivalent series resistance, and dielectric withstand voltage, were evaluated. The prototypical capacitors are currently being fabricated using SiC film.

SiC-Based Schottky Diode Gas Sensors

NASA Technical Reports Server (NTRS)

Hunter, Gary W.; Neudeck, Philip G.; Chen, Liang-Yu; Knight, Dak; Liu, Chung-Chiun; Wu, Quing-Hai

1997-01-01

Silicon carbide based Schottky diode gas sensors are being developed for high temperature applications such as emission measurements. Two different types of gas sensitive diodes will be discussed in this paper. By varying the structure of the diode, one can affect the diode stability as well as the diode sensitivity to various gases. It is concluded that the ability of SiC to operate as a high temperature semiconductor significantly enhances the versatility of the Schottky diode gas sensing structure and will potentially allow the fabrication of a SiC-based gas sensor arrays for versatile high temperature gas sensing applications.

An Extension of SIC Predictions to the Wiener Coactive Model

PubMed Central

Houpt, Joseph W.; Townsend, James T.

2011-01-01

The survivor interaction contrasts (SIC) is a powerful measure for distinguishing among candidate models of human information processing. One class of models to which SIC analysis can apply are the coactive, or channel summation, models of human information processing. In general, parametric forms of coactive models assume that responses are made based on the first passage time across a fixed threshold of a sum of stochastic processes. Previous work has shown that that the SIC for a coactive model based on the sum of Poisson processes has a distinctive down-up-down form, with an early negative region that is smaller than the later positive region. In this note, we demonstrate that a coactive process based on the sum of two Wiener processes has the same SIC form. PMID:21822333

An Extension of SIC Predictions to the Wiener Coactive Model.

PubMed

Houpt, Joseph W; Townsend, James T

2011-06-01

The survivor interaction contrasts (SIC) is a powerful measure for distinguishing among candidate models of human information processing. One class of models to which SIC analysis can apply are the coactive, or channel summation, models of human information processing. In general, parametric forms of coactive models assume that responses are made based on the first passage time across a fixed threshold of a sum of stochastic processes. Previous work has shown that that the SIC for a coactive model based on the sum of Poisson processes has a distinctive down-up-down form, with an early negative region that is smaller than the later positive region. In this note, we demonstrate that a coactive process based on the sum of two Wiener processes has the same SIC form.

Toxicity assessment of SiC nanofibers and nanorods against bacteria.

PubMed

Szala, Mateusz; Borkowski, Andrzej

2014-02-01

In the present study, evidence of the antibacterial effects of silicon carbide (SiC) nanofibers (NFSiC) and nanorods (NRSiC) obtained by combustion synthesis has been presented. It has been shown that the examined bacteria, Pseudomonas putida, could bind to the surface of the investigated SiC nanostructures. The results of respiration measurements, dehydrogenase activity measurements, and evaluation of viable bacteria after incubation with NFSiC and NRSiC demonstrated that the nanostructures of SiC affect the growth and activity of the bacteria examined. The direct count of bacteria stained with propidium iodide after incubation with SiC nanostructures revealed that the loss of cell membrane integrity could be one of the main effects leading to the death of the bacteria. © 2013 Published by Elsevier Inc.

Update on Development of SiC Multi-Chip Power Modules

NASA Technical Reports Server (NTRS)

Lostetter, Alexander; Cilio, Edgar; Mitchell, Gavin; Schupbach, Roberto

2008-01-01

Progress has been made in a continuing effort to develop multi-chip power modules (SiC MCPMs). This effort at an earlier stage was reported in 'SiC Multi-Chip Power Modules as Power-System Building Blocks' (LEW-18008-1), NASA Tech Briefs, Vol. 31, No. 2 (February 2007), page 28. The following recapitulation of information from the cited prior article is prerequisite to a meaningful summary of the progress made since then: 1) SiC MCPMs are, more specifically, electronic power-supply modules containing multiple silicon carbide power integrated-circuit chips and silicon-on-insulator (SOI) control integrated-circuit chips. SiC MCPMs are being developed as building blocks of advanced expandable, reconfigurable, fault-tolerant power-supply systems. Exploiting the ability of SiC semiconductor devices to operate at temperatures, breakdown voltages, and current densities significantly greater than those of conventional Si devices, the designs of SiC MCPMs and of systems comprising multiple SiC MCPMs are expected to afford a greater degree of miniaturization through stacking of modules with reduced requirements for heat sinking; 2) The stacked SiC MCPMs in a given system can be electrically connected in series, parallel, or a series/parallel combination to increase the overall power-handling capability of the system. In addition to power connections, the modules have communication connections. The SOI controllers in the modules communicate with each other as nodes of a decentralized control network, in which no single controller exerts overall command of the system. Control functions effected via the network include synchronization of switching of power devices and rapid reconfiguration of power connections to enable the power system to continue to supply power to a load in the event of failure of one of the modules; and, 3) In addition to serving as building blocks of reliable power-supply systems, SiC MCPMs could be augmented with external control circuitry to make them

Synthesis of micro-sized interconnected Si-C composites

DOEpatents

Wang, Donghai; Yi, Ran; Dai, Fang

2016-02-23

Embodiments provide a method of producing micro-sized Si--C composites or doped Si--C and Si alloy-C with interconnected nanoscle Si and C building blocks through converting commercially available SiO.sub.x (0

Viral-templated nanocrystalline Pd nanowires for chemiresistive hydrogen (H2) sensors

NASA Astrophysics Data System (ADS)

Moon, Chung Hee; Yan, Yiran; Zhang, Miluo; Myung, Nosang V.; Haberer, Elaine D.

2014-08-01

A palladium (Pd) nanowire-based hydrogen (H2) sensor has been fabricated with a novel viral-templated assembly route. A filamentous M13 bacteriophage was used as the viral-template for assembly of Pd nanowires at ambient conditions. Scanning electron microscopy determined Pd nanowire distribution and morphology with the devices. The phage template concentration controlled the number of physical and electrical nanowire connections across the device. A greater phage concentration resulted in a higher connection density and thicker Pd deposition. A lower phage concentration generated devices which formed chain-like nanowires of Pd nanocrystals, whereas a higher phage concentration formed devices with a continuous mesh-like structure. The lower concentration devices showed 51-78% instantaneous response to 2000 ppm H2 and response time less than 30 s.

Hydrogen Sulfide as an Oxygen Sensor

PubMed Central

2015-01-01

Abstract Significance Although oxygen (O2)-sensing cells and tissues have been known for decades, the identity of the O2-sensing mechanism has remained elusive. Evidence is accumulating that O2-dependent metabolism of hydrogen sulfide (H2S) is this enigmatic O2 sensor. Recent Advances The elucidation of biochemical pathways involved in H2S synthesis and metabolism have shown that reciprocal H2S/O2 interactions have been inexorably linked throughout eukaryotic evolution; there are multiple foci by which O2 controls H2S inactivation, and the effects of H2S on downstream signaling events are consistent with those activated by hypoxia. H2S-mediated O2 sensing has been demonstrated in a variety of O2-sensing tissues in vertebrate cardiovascular and respiratory systems, including smooth muscle in systemic and respiratory blood vessels and airways, carotid body, adrenal medulla, and other peripheral as well as central chemoreceptors. Critical Issues Information is now needed on the intracellular location and stoichometry of these signaling processes and how and which downstream effectors are activated by H2S and its metabolites. Future Directions Development of specific inhibitors of H2S metabolism and effector activation as well as cellular organelle-targeted compounds that release H2S in a time- or environmentally controlled way will not only enhance our understanding of this signaling process but also provide direction for future therapeutic applications. Antioxid. Redox Signal. 22, 377–397. “Nothing in Biology Makes Sense Except in the Light of Evolution” —Theodosius Dobzhansky (29) PMID:24801248

InP-based photonic integrated circuit platform on SiC wafer.

PubMed

Takenaka, Mitsuru; Takagi, Shinichi

2017-11-27

We have numerically investigated the properties of an InP-on-SiC wafer as a photonic integrated circuit (PIC) platform. By bonding a thin InP-based semiconductor on a SiC wafer, SiC can be used as waveguide cladding, a heat sink, and a support substrate simultaneously. Since the refractive index of SiC is sufficiently low, PICs can be fabricated using InP-based strip and rib waveguides with a minimum bend radius of approximately 7 μm. High-thermal-conductivity SiC underneath an InP-based waveguide core markedly improves heat dissipation, resulting in superior thermal properties of active devices such as laser diodes. The InP-on-SiC wafer has significantly smaller thermal stress than InP-on-SiO 2 /Si wafer, which prevents the thermal degradation of InP-based devices during high-temperature processes. Thus, InP on SiC provides an ideal platform for high-performance PICs.

SiC JFET Transistor Circuit Model for Extreme Temperature Range

NASA Technical Reports Server (NTRS)

Neudeck, Philip G.

2008-01-01

A technique for simulating extreme-temperature operation of integrated circuits that incorporate silicon carbide (SiC) junction field-effect transistors (JFETs) has been developed. The technique involves modification of NGSPICE, which is an open-source version of the popular Simulation Program with Integrated Circuit Emphasis (SPICE) general-purpose analog-integrated-circuit-simulating software. NGSPICE in its unmodified form is used for simulating and designing circuits made from silicon-based transistors that operate at or near room temperature. Two rapid modifications of NGSPICE source code enable SiC JFETs to be simulated to 500 C using the well-known Level 1 model for silicon metal oxide semiconductor field-effect transistors (MOSFETs). First, the default value of the MOSFET surface potential must be changed. In the unmodified source code, this parameter has a value of 0.6, which corresponds to slightly more than half the bandgap of silicon. In NGSPICE modified to simulate SiC JFETs, this parameter is changed to a value of 1.6, corresponding to slightly more than half the bandgap of SiC. The second modification consists of changing the temperature dependence of MOSFET transconductance and saturation parameters. The unmodified NGSPICE source code implements a T(sup -1.5) temperature dependence for these parameters. In order to mimic the temperature behavior of experimental SiC JFETs, a T(sup -1.3) temperature dependence must be implemented in the NGSPICE source code. Following these two simple modifications, the Level 1 MOSFET model of the NGSPICE circuit simulation program reasonably approximates the measured high-temperature behavior of experimental SiC JFETs properly operated with zero or reverse bias applied to the gate terminal. Modification of additional silicon parameters in the NGSPICE source code was not necessary to model experimental SiC JFET current-voltage performance across the entire temperature range from 25 to 500 C.

Immobilization of functional oxide nanoparticles on silicon surfaces via Si-C bonded polymer brushes.

PubMed

Xu, F J; Wuang, S C; Zong, B Y; Kang, E T; Neoh, K G

2006-05-01

A method for immobilizing and mediating the spatial distribution of functional oxide (such as SiO2 and Fe3O4) nanoparticles (NPs) on (100)-oriented single crystal silicon surface, via Si-C bonded poly(3-(trimethoxysilyl)propyl methacrylate) (P(TMSPM)) brushes from surface-initiated atom transfer radical polymerization (ATRP) of (3-(trimethoxysilyl)propyl methacrylate) (TMSPM), was described. The ATRP initiator was covalently immobilized via UV-induced hydrosilylation of 4-vinylbenzyl chloride (VBC) with the hydrogen-terminated Si(100) surface (Si-H surface). The surface-immobilized Fe3O4 NPs retained their superparamagnetic characteristics and their magnetization intensity could be mediated by adjusting the thickness of the P(TMSPM) brushes.

SiC Integrated Circuits for Power Device Drivers Able to Operate in Harsh Environments

NASA Astrophysics Data System (ADS)

Godignon, P.; Alexandru, M.; Banu, V.; Montserrat, J.; Jorda, X.; Vellvehi, M.; Schmidt, B.; Michel, P.; Millan, J.

2014-08-01

The currently developed SiC electronic devices are more robust to high temperature operation and radiation exposure damage than correspondingly rated Si ones. In order to integrate the existent SiC high power and high temperature electronics into more complex systems, a SiC integrated circuit (IC) technology capable of operation at temperatures substantially above the conventional ones is required. Therefore, this paper is a step towards the development of ICs-control electronics that have to attend the harsh environment power applications. Concretely, we present the development of SiC MESFET-based digital circuitry, able to integrate gate driver for SiC power devices. Furthermore, a planar lateral power MESFET is developed with the aim of its co-integration on the same chip with the previously mentioned SiC digital ICs technology. And finally, experimental results on SiC Schottky-gated devices irradiated with protons and electrons are presented. This development is based on the Tungsten-Schottky interface technology used for the fabrication of stable SiC Schottky diodes for the European Space Agency Mission BepiColombo.

Precursor Selection for Property Optimization in Biomorphic SiC Ceramics

NASA Technical Reports Server (NTRS)

Varela-Feria, F. M.; Lopez-Robledo, M. J.; Martinez-Fernandez, J.; deArellano-Lopez, A. R.; Singh, M.; Gray, Hugh R. (Technical Monitor)

2002-01-01

Biomorphic SiC ceramics have been fabricated using different wood precursors. The evolution of volume, density and microstructure of the woods, carbon performs, and final SiC products are systematically studied in order to establish experimental guidelines that allow materials selection. The wood density is a critical characteristic, which results in a particular final SiC density, and the level of anisotropy in mechanical properties in directions parallel (axial) and perpendicular (radial) to the growth of the wood. The purpose of this work is to explore experimental laws that can help choose a type of wood as precursor for a final SiC product, with a given microstructure, density and level of anisotropy. Preliminary studies of physical properties suggest that not only mechanical properties are strongly anisotropic, but also electrical conductivity and gas permeability, which have great technological importance.

Low-cost fabrication of highly sensitive room temperature hydrogen sensor based on ordered mesoporous Co-doped TiO2 structure

NASA Astrophysics Data System (ADS)

Li, Zhong; Haidry, Azhar Ali; Wang, Tao; Yao, Zheng Jun

2017-07-01

The development of cost-effective gas sensors with improved sensing properties and minimum power consumption for room temperature hydrogen leakage monitoring is in increasing demand. In this context, this report focus on the facile fabrication of ordered mesoporous TiO2 via evaporation-induced self-assembly route. With the controlled doping threshold (3%Co-TiO2), the output resistance change to 1000 ppm H2 is ˜4.1 × 103 with the response time of 66 s. The sensor response exhibits power law dependence with an increase in the hydrogen concentration, where the power law coefficient was found not only specific to the kind of target gas but also related to temperature. Further, the effect of structure integrity with doping level and humidity on sensing characteristics is interpreted in terms of variation in surface potential eVS and depletion region w caused by the adsorption of molecular oxygen O2-.

Chemical reactivity of CVC and CVD SiC with UO2 at high temperatures

NASA Astrophysics Data System (ADS)

Silva, Chinthaka M.; Katoh, Yutai; Voit, Stewart L.; Snead, Lance L.

2015-05-01

Two types of silicon carbide (SiC) synthesized using two different vapor deposition processes were embedded in UO2 pellets and evaluated for their potential chemical reaction with UO2. While minor reactivity between chemical-vapor-composited (CVC) SiC and UO2 was observed at comparatively low temperatures of 1100 and 1300 °C, chemical-vapor-deposited (CVD) SiC did not show any such reactivity. However, both CVD and CVC SiCs showed some reaction with UO2 at a higher temperature (1500 °C). Elemental maps supported by phase maps obtained using electron backscatter diffraction indicated that CVC SiC was more reactive than CVD SiC at 1500 °C. Furthermore, this investigation indicated the formation of uranium carbides and uranium silicide chemical phases such as UC, USi2, and U3Si2 as a result of SiC reaction with UO2.

Research | Hydrogen and Fuel Cells | NREL

Science.gov Websites

a laboratory apparatus to measure thermal conductivity Hydrogen Storage Characterizing hydrogen and fuel cell technology commercialization Photo of a researcher working with sensor testing equipment hydrogen station equipment Technology Validation Collecting and analyzing real-world data to show the

Novel High Temperature Capacitive Pressure Sensor Utilizing SiC Integrated Circuit Twin Ring Oscillators

NASA Technical Reports Server (NTRS)

Scardelletti, M.; Neudeck, P.; Spry, D.; Meredith, R.; Jordan, J.; Prokop, N.; Krasowski, M.; Beheim, G.; Hunter, G.

2017-01-01

This paper describes initial development and testing of a novel high temperature capacitive pressure sensor system. The pressure sensor system consists of two 4H-SiC 11-stage ring oscillators and a SiCN capacitive pressure sensor. One oscillator has the capacitive pressure sensor fixed at one node in its feedback loop and varies as a function of pressure and temperature while the other provides a pressure-independent reference frequency which can be used to temperature compensate the output of the first oscillator. A two-day repeatability test was performed up to 500C on the oscillators and the oscillator fundamental frequency changed by only 1. The SiCN capacitive pressure sensor was characterized at room temperature from 0 to 300 psi. The sensor had an initial capacitance of 3.76 pF at 0 psi and 1.75 pF at 300 psi corresponding to a 54 change in capacitance. The integrated pressure sensor system was characterized from 0 to 300 psi in steps of 50 psi over a temperature range of 25 to 500C. The pressure sensor system sensitivity was 0.113 kHzpsi at 25C and 0.026 kHzpsi at 500C.

The Paralinear Oxidation of SiC in Combustion Environments

NASA Technical Reports Server (NTRS)

Opila, Elizabeth J.; Greenbauer-Seng, Leslie (Technical Monitor)

2000-01-01

SiC is proposed for structural applications in high pressure, high temperature. high gas velocity environments of turbine and rocket engines. These environments are typically composed of complex gas mixtures containing carbon dioxide, oxygen, water vapor, and nitrogen. It is known that the primary oxidant for SiC in these environments is water vapor.

Laser ablation for membrane processing of AlGaN/GaN- and micro structured ferroelectric thin film MEMS and SiC pressure sensors for extreme conditions

NASA Astrophysics Data System (ADS)

Zehetner, J.; Vanko, G.; Dzuba, J.; Ryger, I.; Lalinsky, T.; Benkler, Manuel; Lucki, Michal

2015-05-01

AlGaN/GaN based high electron mobility transistors (HEMTs), Schottky diodes and/or resistors have been presented as sensing devices for mechanical or chemical sensors operating in extreme conditions. In addition we investigate ferroelectric thin films for integration into micro-electro-mechanical-systems (MEMS). Creation of appropriate diaphragms and/or cantilevers out of SiC is necessary for further improvement of sensing properties of such MEMS sensors. For example sensitivity of the AlGaN/GaN based MEMS pressure sensor can be modified by membrane thickness. We demonstrated that a 4H-SiC 80μm thick diaphragms can be fabricated much faster with laser ablation than by electrochemical, photochemical or reactive ion etching (RIE). We were able to verify the feasibility of this process by fabrication of micromechanical membrane structures also in bulk 3C-SiC, borosilicate glass, sapphire and Al2O3 ceramic substrates by femtosecond laser (520nm) ablation. On a 350μm thick 4H-SiC substrate we produced an array of 275μm deep and 1000μm to 3000μm of diameter blind holes without damaging the 2μm AlN layer at the back side. In addition we investigated ferroelectric thin films as they can be deposited and micro-patterned by a direct UV-lithography method after the ablation process for a specific membrane design. The risk to harm or damage the function of thin films was eliminated by that means. Some defects in the ablated membranes are also affected by the polarisation of the laser light. Ripple structures oriented perpendicular to the laser polarisation promote creation of pin holes which would perforate a thin membrane. We developed an ablation technique strongly inhibiting formation of ripples and pin poles.

Electrochemical hydrogen sulfide biosensors.

PubMed

Xu, Tailin; Scafa, Nikki; Xu, Li-Ping; Zhou, Shufeng; Abdullah Al-Ghanem, Khalid; Mahboob, Shahid; Fugetsu, Bunshi; Zhang, Xueji

2016-02-21

The measurement of sulfide, especially hydrogen sulfide, has held the attention of the analytical community due to its unique physiological and pathophysiological roles in biological systems. Electrochemical detection offers a rapid, highly sensitive, affordable, simple, and real-time technique to measure hydrogen sulfide concentration, which has been a well-documented and reliable method. This review details up-to-date research on the electrochemical detection of hydrogen sulfide (ion selective electrodes, polarographic hydrogen sulfide sensors, etc.) in biological samples for potential therapeutic use.

Thin Film Heat Flux Sensor Development for Ceramic Matrix Composite (CMC) Systems

NASA Technical Reports Server (NTRS)

Wrbanek, John D.; Fralick, Gustave C.; Hunter, Gary W.; Zhu, Dongming; Laster, Kimala L.; Gonzalez, Jose M.; Gregory, Otto J.

2010-01-01

The NASA Glenn Research Center (GRC) has an on-going effort for developing high temperature thin film sensors for advanced turbine engine components. Stable, high temperature thin film ceramic thermocouples have been demonstrated in the lab, and novel methods of fabricating sensors have been developed. To fabricate thin film heat flux sensors for Ceramic Matrix Composite (CMC) systems, the rough and porous nature of the CMC system posed a significant challenge for patterning the fine features required. The status of the effort to develop thin film heat flux sensors specifically for use on silicon carbide (SiC) CMC systems with these new technologies is described.

Chemical reactivity of CVC and CVD SiC with UO 2 at high temperatures

DOE PAGES

Silva, Chinthaka M.; Katoh, Yutai; Voit, Stewart L.; ...

2015-02-11

Two types of silicon carbide (SiC) synthesized using two different vapor deposition processes were embedded in UO 2 pellets and evaluated for their potential chemical reaction with UO 2. While minor reactivity between chemical-vapor-composited (CVC) SiC and UO 2 was observed at comparatively low temperatures of 1100 and 1300 C, chemical-vapor-deposited (CVD) SiC did not show any such reactivity, according to microstructural investigations. But, both CVD and CVC SiCs showed some reaction with UO 2 at a higher temperature (1500 C). Elemental maps supported by phase maps obtained using electron backscatter diffraction indicated that CVC SiC was more reactive thanmore » CVD SiC at 1500 C. Moreover, this investigation indicated the formation of uranium carbides and uranium silicide chemical phases such as UC, USi 2, and U 3Si 2 as a result of SiC reaction with UO 2.« less

Fiber optic microsensor technology for detection of hydrogen in space applications

NASA Astrophysics Data System (ADS)

Kazemi, Alex A.

2008-04-01

Optical hydrogen sensors are intrinsically safe since they produce no arc or spark in an explosive environment caused by the leakage of hydrogen. Safety remains a top priority since leakage of hydrogen in air during production, storage, transfer and distribution creates an explosive atmosphere for concentrations between 4% (v/v) - the lower explosive limit (LEL) and 74.5% (v/v) - the upper explosive limit (UEL) at room temperature and pressure. Being a very small molecule, hydrogen is prone to leakage through seals and micro-cracks. Hydrogen detection in space application is very challenging; public acceptance of hydrogen fuel would require the integration of a reliable hydrogen safety sensor. For detecting leakage of cryogenic fluids in spaceport facilities, Launch vehicle industry and aerospace agencies are currently relying heavily on the bulky mass spectrometers, which fill one or more equipment racks, and weigh several hundred kilograms. This paper describes the successful development and test of a multi-point fiber optic hydrogen sensor system during the static firing of an Evolved Expandable Launch Vehicle at NASA's Stennis Space Center. The system consisted of microsensors (optrodes) using hydrogen gas sensitive indicator incorporated onto an optically transparent porous substrate. The modular optoelectronics and multiplexing network system was designed and assembled utilizing a multi-channel optoelectronic sensor readout unit that monitored the hydrogen and temperature response of the individual optrodes in real-time and communicated this information via a serial communication port to a remote laptop computer. The paper would discuss the sensor design and performance data under field deployment conditions.

A Nose for Hydrogen Gas: Fast, Sensitive H2 Sensors Using Electrodeposited Nanomaterials.

PubMed

Penner, Reginald M

2017-08-15

Hydrogen gas (H 2 ) is odorless and flammable at concentrations above 4% (v/v) in air. Sensors capable of detecting it rapidly at lower concentrations are needed to "sniff" for leaked H 2 wherever it is used. Electrical H 2 sensors are attractive because of their simplicity and low cost: Such sensors consist of a metal (usually palladium, Pd) resistor. Exposure to H 2 causes a resistance increase, as Pd metal is converted into more resistive palladium hydride (PdH x ). Sensors based upon Pd alloy films, developed in the early 1990s, were both too slow and too insensitive to meet the requirements of H 2 safety sensing. In this Account, we describe the development of H 2 sensors that are based upon electrodeposited nanomaterials. This story begins with the rise to prominence of nanowire-based sensors in 2001 and our demonstration that year of the first nanowire-based H 2 sensor. The Pd nanowires used in these experiments were prepared by electrodepositing Pd at linear step-edge defects on a graphite electrode surface. In 2005, lithographically patterned nanowire electrodeposition (LPNE) provided the capability to pattern single Pd nanowires on dielectrics using electrodeposition. LPNE also provided control over the nanowire thickness (±1 nm) and width (±10-15%). Using single Pd nanowires, it was demonstrated in 2010 that smaller nanowires responded more rapidly to H 2 exposure. Heating the nanowire using Joule self-heating (2010) also dramatically accelerated sensor response and recovery, leading to the conclusion that thermally activated H 2 chemisorption and desorption of H 2 were rate-limiting steps in sensor response to and recovery from H 2 exposure. Platinum (Pt) nanowires, studied in 2012, showed an inverted resistance response to H 2 exposure, that is, the resistance of Pt nanowires decreased instead of increased upon H 2 exposure. H 2 dissociatively chemisorbs at a Pt surface to form Pt-H, but in contrast to Pd, it stays on the Pt surface. Pt nanowires

Modeling the Elastic Modulus of 2D Woven CVI SiC Composites

NASA Technical Reports Server (NTRS)

Morscher, Gregory N.

2006-01-01

The use of fiber, interphase, CVI SiC minicomposites as structural elements for 2D-woven SiC fiber reinforced chemically vapor infiltrated (CVI) SiC matrix composites is demonstrated to be a viable approach to model the elastic modulus of these composite systems when tensile loaded in an orthogonal direction. The 0deg (loading direction) and 90deg (perpendicular to loading direction) oriented minicomposites as well as the open porosity and excess SiC associated with CVI SiC composites were all modeled as parallel elements using simple Rule of Mixtures techniques. Excellent agreement for a variety of 2D woven Hi-Nicalon(TradeMark) fiber-reinforced and Sylramic-iBN reinforced CVI SiC matrix composites that differed in numbers of plies, constituent content, thickness, density, and number of woven tows in either direction (i.e, balanced weaves versus unbalanced weaves) was achieved. It was found that elastic modulus was not only dependent on constituent content, but also the degree to which 90deg minicomposites carried load. This depended on the degree of interaction between 90deg and 0deg minicomposites which was quantified to some extent by composite density. The relationships developed here for elastic modulus only necessitated the knowledge of the fractional contents of fiber, interphase and CVI SiC as well as the tow size and shape. It was concluded that such relationships are fairly robust for orthogonally loaded 2D woven CVI SiC composite system and can be implemented by ceramic matrix composite component modelers and designers for modeling the local stiffness in simple or complex parts fabricated with variable constituent contents.

Color Changing Material for Hydrogen Leak Detection

NASA Technical Reports Server (NTRS)

Victor, Megan E.

2014-01-01

Kennedy Space Center scientists developed a hydrogen leak sensor utilizing a combination of chemochromic pigment and polymer that can be molded or fiber spun into rigid or flexible shapes such as tape. The sensor turns a dark color when exposed to hydrogen gas. This sensor has proven to be very effective for pinpointing the exact location of leaks in hydrogen gas lines and fittings at launch pads. Kennedy Space Center exclusively licensed this technology to the University of Central Florida (UCF), who also holds patents that are complimentary to KSC's. UCF has bundled the patents and exclusively licensed the portfolio to HySense Technology LLC, a startup company founded by a UCF professor who supports the UCF Florida Solar Energy Center (FSEC). HySense has fully developed its product (known as Intellipigment"TM"), and currently has five commercial customers. The company recently won the $100,000 first-place award at the CAT5 innovation competition at the Innovation Concourse of the Southeast: Safety & Manufacturing event in Orlando, FL. Commercial production and sales of this technology by HySense Technology will make this leak sensor widely available for use by NASA, DoD, and industries that utilize hydrogen gas.

Highly stretchable strain sensor based on polyurethane substrate using hydrogen bond-assisted laminated structure for monitoring of tiny human motions

NASA Astrophysics Data System (ADS)

Huang, Ying; Zhao, Yunong; Wang, Yang; Guo, Xiaohui; Zhang, Yangyang; Liu, Ping; Liu, Caixia; Zhang, Yugang

2018-03-01

Strain sensors used as flexible and wearable electronic devices have improved prospects in the fields of artificial skin, robotics, human-machine interfaces, and healthcare. This work introduces a highly stretchable fiber-based strain sensor with a laminated structure made up of a graphene nanoplatelet layer and a carbon black/single-walled carbon nanotube synergetic conductive network layer. An ultrathin, flexible, and elastic two-layer polyurethane (PU) yarn substrate was successively deposited by a novel chemical bonding-based layered dip-coating process. These strain sensors demonstrated high stretchability (˜350%), little hysteresis, and long-term durability (over 2400 cycles) due to the favorable tensile properties of the PU substrate. The linearity of the strain sensor could reach an adjusted R-squared of 0.990 at 100% strain, which is better than most of the recently reported strain sensors. Meanwhile, the strain sensor exhibited good sensibility, rapid response, and a lower detection limit. The lower detection limit benefited from the hydrogen bond-assisted laminated structure and continuous conductive path. Finally, a series of experiments were carried out based on the special features of the PU strain sensor to show its capacity of detecting and monitoring tiny human motions.

A Hydrogen Leak Detection System for Aerospace and Commercial Applications

NASA Technical Reports Server (NTRS)

Hunter, Gary W.; Makel, D. B.; Jansa, E. D.; Patterson, G.; Cova, P. J.; Liu, C. C.; Wu, Q. H.; Powers, W. T.

1995-01-01

Leaks on the space shuttle while on the launch pad have generated interest in hydrogen leak monitoring technology. Microfabricated hydrogen sensors are being fabricated at Case Western Reserve University (CWRU) and tested at NASA Lewis Research Center (LeRC). These sensors have been integrated into hardware and software designed by Aerojet. This complete system allows for multipoint leak monitoring designed to provide leak source and magnitude information in real time. The monitoring system processes data from the hydrogen sensors and presents the operator with a visual indication of the leak location and magnitude. Although the leak monitoring system was designed for hydrogen propulsion systems, the possible applications of this monitoring system are wide ranged. This system is in operation in an automotive application which requires high sensitivity to hydrogen.

Reliability Concerns for Flying SiC Power MOSFETs in Space

NASA Technical Reports Server (NTRS)

Galloway, K. F.; Witulski, A. F.; Schrimpf, R. D.; Sternberg, A. L.; Ball, D. R.; Javanainen, A.; Reed, R. A.; Sierawski, B. D.; Lauenstein, J.-M.

2018-01-01

SiC power MOSFETs are space-ready in terms of typical reliability measures. However, single event burnout (SEB) often occurs at voltages 50% or lower than specified breakdown. Data illustrating burnout for 1200 V devices is reviewed and the space reliability of SiC MOSFETs is discussed.

Properties of thin SiC membrane for x-ray mask

NASA Astrophysics Data System (ADS)

Shoki, Tsutomu; Nagasawa, Hiroyuki; Kosuga, Hiroyuki; Yamaguchi, Yoichi; Annaka, Noromichi; Amemiya, Isao; Nagarekawa, Osamu

1993-06-01

We have investigated the effects of film thickness, anti-reflective (AR) coating and surface roughness on the optical transparency of silicon carbide (SiC) membrane. Peak transmittances monotonously increased as the thickness decreased. The transmittance at 633 nm for 1.05 micrometers thick SiC membrane adjusted by reactive ion etching was 70%, and increased up to 80% by an AR coating. SiC membrane with extremely smooth surface of 0.12 nm (Ra) has been obtained by polishing, and had peak transmittances of 69% and 80% at 633 nm for 2.0 micrometers and 1.0 micrometers in thickness, respectively. Poly-crystalline (beta) -SiC membrane in the suitable tensile stress range of 0.3 to 2.0 X 108 Pa and with high Young's modulus of 4.5 X 1011 Pa has been prepared by a hot wall type low pressure chemical vapor deposition, and been found to need to have thickness over 0.7 micrometers to maintain sufficient mechanical strength in processing.

Polyaniline assisted by TiO2:SnO2 nanoparticles as a hydrogen gas sensor at environmental conditions

NASA Astrophysics Data System (ADS)

Nasirian, Shahruz; Milani Moghaddam, Hossain

2015-02-01

In the present research, polyaniline assisted by TiO2:SnO2 nanoparticles was synthesized and deposited onto an epoxy glass substrate with Cu-interdigited electrodes for gas sensing application. To examine the efficiency of the polyaniline/TiO2:SnO2 nanocomposite (PTS) as a hydrogen (H2) gas sensor, its nature, stability, response, recovery/response time have been studied with a special focus on its ability to work at environmental conditions. H2 gas sensing results demonstrated that a PTS sensor with 20 and 10 wt% of anatase-TiO2 and SnO2 nanoparticles, respectively, has the best response time (75 s) with a recovery time of 117 s at environmental conditions. The highest (lowest) response (recovery time) was 6.18 (46 s) in PTS sensor with 30 and 15 wt% of anatase- (rutile-)TiO2 and SnO2 nanoparticles, respectively, at 0.8 vol.% H2 gas. Further, the H2 gas sensing mechanism of PTS sensor has also been studied.

Amorphization resistance of nano-engineered SiC under heavy ion irradiation

DOE Office of Scientific and Technical Information (OSTI.GOV)

Imada, Kenta; Ishimaru, Manabu; Xue, Haizhou

Silicon carbide (SiC) with a high-density of planar defects (hereafter, ‘nano-engineered SiC’) and epitaxially-grown single-crystalline 3C-SiC were simultaneously irradiated with Au ions at room temperature, in order to compare their relative resistance to radiation-induced amorphization. Furthermore, it was found that the local threshold dose for amorphization is comparable for both samples under 2 MeV Au ion irradiation; whereas, nano-engineered SiC exhibits slightly greater radiation tolerance than single crystalline SiC under 10 MeV Au irradiation. Under 10 MeV Au ion irradiation, the dose for amorphization increased by about a factor of two in both nano-engineered and single crystal SiC due tomore » the local increase in electronic energy loss that enhanced dynamic recovery.« less

Amorphization resistance of nano-engineered SiC under heavy ion irradiation

DOE PAGES

Imada, Kenta; Ishimaru, Manabu; Xue, Haizhou; ...

2016-06-19

Silicon carbide (SiC) with a high-density of planar defects (hereafter, ‘nano-engineered SiC’) and epitaxially-grown single-crystalline 3C-SiC were simultaneously irradiated with Au ions at room temperature, in order to compare their relative resistance to radiation-induced amorphization. Furthermore, it was found that the local threshold dose for amorphization is comparable for both samples under 2 MeV Au ion irradiation; whereas, nano-engineered SiC exhibits slightly greater radiation tolerance than single crystalline SiC under 10 MeV Au irradiation. Under 10 MeV Au ion irradiation, the dose for amorphization increased by about a factor of two in both nano-engineered and single crystal SiC due tomore » the local increase in electronic energy loss that enhanced dynamic recovery.« less

Effects of high-temperature hydrogenation treatment on sliding friction and wear behavior of carbide-derived carbon films.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Erdemir, A.; Kovalchenko, A.; McNallan, M. J.

2004-01-01

In this study, we investigated the effects of a high-temperature hydrogenation treatment on the sliding friction and wear behavior of nanostructured carbide-derived carbon (CDC) films in dry nitrogen and humid air environments. These films are produced on the surfaces of silicon carbide substrates by reacting the carbide phase with chlorine or chlorine-hydrogen gas mixtures at 1000 to 1100 C in a sealed tube furnace. The typical friction coefficients of CDC films in open air are in the range of 0.2 to 0.25, but in dry nitrogen, the friction coefficients are 0.15. In an effort to achieve lower friction on CDCmore » films, we developed and used a special hydrogenation process that was proven to be very effective in lowering friction of CDC films produced on SiC substrates. Specifically, the films that were post-hydrogen-treated exhibited friction coefficients as low as 0.03 in dry nitrogen, while the friction coefficients in humid air were 0.2. The wear of Si{sub 3}N{sub 4} counterface balls was hard to measure after the tests, while shallow wear tracks had formed on CDC films on SiC disks. Detailed mechanical and structural characterizations of the CDC films and sliding contact surfaces were done using a series of analytical techniques and these findings were correlated with the friction and wear behaviors of as-produced and hydrogen-treated CDC films.« less

Advances in Hydrogen, Carbon Dioxide, and Hydrocarbon Gas Sensor Technology Using GaN and ZnO-Based Devices

PubMed Central

Anderson, Travis; Ren, Fan; Pearton, Stephen; Kang, Byoung Sam; Wang, Hung-Ta; Chang, Chih-Yang; Lin, Jenshan

2009-01-01

In this paper, we review our recent results in developing gas sensors for hydrogen using various device structures, including ZnO nanowires and GaN High Electron Mobility Transistors (HEMTs). ZnO nanowires are particularly interesting because they have a large surface area to volume ratio, which will improve sensitivity, and because they operate at low current levels, will have low power requirements in a sensor module. GaN-based devices offer the advantage of the HEMT structure, high temperature operation, and simple integration with existing fabrication technology and sensing systems. Improvements in sensitivity, recoverability, and reliability are presented. Also reported are demonstrations of detection of other gases, including CO2 and C2H4 using functionalized GaN HEMTs. This is critical for the development of lab-on-a-chip type systems and can provide a significant advance towards a market-ready sensor application. PMID:22408548

Fractographic Analysis of HfB2-SiC and ZrB2-SiC Composites

NASA Technical Reports Server (NTRS)

Mecholsky, J.J., Jr.; Ellerby, D. T.; Johnson, S. M.; Stackpoole, M. M.; Loehman, R. E.; Arnold, Jim (Technical Monitor)

2001-01-01

Hafnium diboride-silicon carbide and zirconium diboride-silicon carbide composites are potential materials for high temperature leading edge applications on reusable launch vehicles. In order to establish material constants necessary for evaluation of in-situ fracture, bars fractured in four point flexure were examined using fractographic principles. The fracture toughness was determined from measurements of the critical crack sizes and the strength values, and the crack branching constants were established to use in forensic fractography of materials for future flight applications. The fracture toughnesses range from about 13 MPam (sup 1/2) at room temperature to about 6 MPam (sup 1/2) at 1400 C for ZrB2-SiC composites and from about 11 MPam (sup 1/2) at room temperature to about 4 MPam (sup 1/2) at 1400 C for HfB2-SiC composites.

Method of maintaining activity of hydrogen-sensing platinum electrode

NASA Technical Reports Server (NTRS)

Harman, J. N., III

1968-01-01

Three-electrode hydrogen sensor containing a platinum electrode maintained in a highly catalytic state, operates with a minimal response time and maximal sensitivity to the hydrogen gas being sensed. Electronic control and readout circuitry reactivates the working electrode of the sensor to a state of maximal catalytic activity.

Stress Analysis of SiC MEMS Using Raman Spectroscopy

NASA Astrophysics Data System (ADS)

Ness, Stanley J.; Marciniak, M. A.; Lott, J. A.; Starman, L. A.; Busbee, J. D.; Melzak, J. M.

2003-03-01

During the fabrication of Micro-Electro-Mechanical Systems (MEMS), residual stress is often induced in the thin films that are deposited to create these systems. These stresses can cause the device to fail due to buckling, curling, or fracture. Industry is looking for ways to characterize the stress during the deposition of thin films in order to reduce or eliminate device failure. Micro-Raman spectroscopy has been successfully used to characterize poly-Si MEMS devices made with the MUMPS® process. Raman spectroscopy was selected because it is nondestructive, fast and has the potential for in situ stress monitoring. This research attempts to use Raman spectroscopy to analyze the stress in SiC MEMS made with the MUSiC® process. Raman spectroscopy is performed on 1-2-micron-thick SiC thin films deposited on silicon, silicon nitride, and silicon oxide substrates. The most common poly-type of SiC found in thin film MEMS made with the MUSiC® process is 3C-SiC. Research also includes baseline spectra of 6H, 4H, and 15R poly-types of bulk SiC.

Research on Antiphonic Characteristic of AlMg10-SiC Ultralight Composite Materials

NASA Astrophysics Data System (ADS)

Rusu, O.; Rusu, I.

2018-06-01

The paper presents the results on the absorption sound testing of an ultralight cellular composite material AlMg10-SiC, obtained by sputtering method. We have chosen this type of material because its microstructure generally comprises open cells (and relatively few semi-open cells), evenly distributed in the material, a structure that, at least theoretically, has a favorable behavior in relation to sound damping. The tests were performed on three types of samples, namely P11 – AlMg10 – 5%SiC, P12 – AlMg10 – 10%SiC şi P13 – AlMg10 – 15%SiC. The 15% SiC (P13) cellular material sample has the best sound-absorbing characteristics and the highest practical absorption degree.

Processing and Properties of SiC/MoSi2-SiC Composites Fabricated by Melt Infiltration

NASA Technical Reports Server (NTRS)

Bhatt, Ramakrishna T.; Hebsur, Mohan G.

2000-01-01

Hi-Nicalon SiC fiber reinforced MoSi2-SiC matrix composites (SiC/MoSi2-SiC) have been fabricated by the melt infiltration approach. The composite consists of approximately 60 vol%, 2-D woven BN/SiC coated Hi-Nicalon SiC fibers and approximately 40 vol% MoSi2-SiC matrix. The room temperature tensile properties and thermal conductivity of the SiC/MoSi2-SiC composites were measured and compared with those of the melt infiltrated SiC/SiC composites. The influence oi fiber architecture on tensile properties was also evaluated. Results indicate that the primary modulus, stress corresponding to deviation from linearity, and transverse thermal conductivity values for the SiC/MoSi2-SiC composites are significantly lower than those for the SiC/SiC composites. Microcracking of the matrix due to the large difference in thermal expansion between MoSi2 and SiC appears to be the reason for the lower matrix dominated properties of SiC/MoSi2-SiC composites.

Stability of Ceramics in Hydrogen between 4000 and 4500 F

NASA Technical Reports Server (NTRS)

May, Charles E.; Koneval, Donald; Fryburg, George C.

1959-01-01

The various reactions that are possible between hydrogen and certain ceramic materials are discussed as well as the means of measuring the extent of such reactions. Powdered carbides, nitrides, borides, and oxides were tested. These materials were heated inductively in a tungsten cup between 4000 and 4500 F for two 1-hour periods under a static hydrogen atmosphere. Weight, pressure, and diffraction pattern changes were observed, and these served to indicate the extent of reaction. Most of the ceramics, HfC, ZrC, TiC, TaC, NbC, WC, MO2C, HfN, ZrN, NbN, ZrB2, NbB2, and WB, showed less reaction than the minimum detectable value. However, the ceramics, TiN, TaN, HfB2, TiB2, ZrO2, and Cr2O3, apparently reacted to a measurable extent with hydrogen. Reactions of SiC, VC, and TaB2 with hydrogen were not determinable because of their incompatibility with the tungsten container.

PhySIC: a veto supertree method with desirable properties.

PubMed

Ranwez, Vincent; Berry, Vincent; Criscuolo, Alexis; Fabre, Pierre-Henri; Guillemot, Sylvain; Scornavacca, Celine; Douzery, Emmanuel J P

2007-10-01

This paper focuses on veto supertree methods; i.e., methods that aim at producing a conservative synthesis of the relationships agreed upon by all source trees. We propose desirable properties that a supertree should satisfy in this framework, namely the non-contradiction property (PC) and the induction property (PI). The former requires that the supertree does not contain relationships that contradict one or a combination of the source topologies, whereas the latter requires that all topological information contained in the supertree is present in a source tree or collectively induced by several source trees. We provide simple examples to illustrate their relevance and that allow a comparison with previously advocated properties. We show that these properties can be checked in polynomial time for any given rooted supertree. Moreover, we introduce the PhySIC method (PHYlogenetic Signal with Induction and non-Contradiction). For k input trees spanning a set of n taxa, this method produces a supertree that satisfies the above-mentioned properties in O(kn(3) + n(4)) computing time. The polytomies of the produced supertree are also tagged by labels indicating areas of conflict as well as those with insufficient overlap. As a whole, PhySIC enables the user to quickly summarize consensual information of a set of trees and localize groups of taxa for which the data require consolidation. Lastly, we illustrate the behaviour of PhySIC on primate data sets of various sizes, and propose a supertree covering 95% of all primate extant genera. The PhySIC algorithm is available at http://atgc.lirmm.fr/cgi-bin/PhySIC.

High-efficient photo-electron transport channel in SiC constructed by depositing cocatalysts selectively on specific surface sites for visible-light H{sub 2} production

DOE Office of Scientific and Technical Information (OSTI.GOV)

Wang, Da; Peng, Yuan; Wang, Qi

2016-04-18

Control cocatalyst location on a metal-free semiconductor to promote surface charge transfer for decreasing the electron-hole recombination is crucial for enhancing solar energy conversion. Based on the findings that some metals have an affinity for bonding with the specific atoms of polar semiconductors at a heterostructure interface, we herein control Pt deposition selectively on the Si sites of a micro-SiC photocatalyst surface via in-situ photo-depositing. The Pt-Si bond forming on the interface constructs an excellent channel, which is responsible for accelerating photo-electron transfer from SiC to Pt and then reducing water under visible-light. The hydrogen production is enhanced by twomore » orders of magnitude higher than that of bare SiC, and 2.5 times higher than that of random-depositing nano-Pt with the same loading amount.« less

CVD of SiC and AlN using cyclic organometallic precursors

NASA Technical Reports Server (NTRS)

Interrante, L. V.; Larkin, D. J.; Amato, C.

1992-01-01

The use of cyclic organometallic molecules as single-source MOCVD precursors is illustrated by means of examples taken from our recent work on AlN and SiC deposition, with particular focus on SiC. Molecules containing (AlN)3 and (SiC)2 rings as the 'core structure' were employed as the source materials for these studies. The organoaluminum amide, (Me2AlNH2)3, was used as the AlN source and has been studied in a molecular beam sampling apparatus in order to determine the gas phase species present in a hot-wall CVD reactor environment. In the case of SiC CVD, a series of disilacyclobutanes (Si(XX')CH2)2 (with X and X' = H, CH3, and CH2SiH2CH3), were examined in a cold-wall, hot-stage CVD reactor in order to compare their relative reactivities and prospective utility as single-source CVD precursors. The parent compound, disilacyclobutane, (SiH2CH2)2, was found to exhibit the lowest deposition temperature (ca. 670 C) and to yield the highest purity SiC films. This precursor gave a highly textured, polycrystalline film on the Si(100) substrates.

The microstructures of SCS-6 and SCS-8 SiC reinforcing fibers

DOE Office of Scientific and Technical Information (OSTI.GOV)

Sattler, M.L.; Kinney, J.H.; Zywicz, E.

The microstructures of SCS-6 and SCS-8 SiC fibers have been examined and analyzed using high resolution transmission electron microscopy (HRTEM), microdiffraction, parallel electron energy loss spectroscopy (PEELS), x-ray diffraction and x-ray spectroscopy. The results of the study confirm findings from earlier studies wherein the microstructure of the fibers have been described as consisting of {beta}-SiC grown upon a monofilament turbostratic carbon core. The present study, however, provides much more detail regarding this microstructure. For example, PEELS spectroscopy and x-ray microscopy indicate that the composition of the SiC varies smoothly from SiC plus free C near the carbon core to SiCmore » at the midradial boundary. The SiC stoichiometry is roughly preserved from the midradial boundary to the exterior interface. HRTEM, microdiffraction, and dark field images provide evidence that the excess carbon is amorphous free carbon which is most likely situated at the grain boundaries of the SiC. The x-ray microscopy results are also consistent with the presence of two phases near the core which consist of SiC and free carbon having density less than graphite (2.25 g/cc). This complex microstructure may explain the recent observations of nonplanar failure in composites fabricated with SCS fibers.« less

Calorimetric Thermoelectric Gas Sensor for the Detection of Hydrogen, Methane and Mixed Gases

PubMed Central

Park, Nam-Hee; Akamatsu, Takafumi; Itoh, Toshio; Izu, Noriya; Shin, Woosuck

2014-01-01

A novel miniaturized calorimeter-type sensor device with a dual-catalyst structure was fabricated by integrating different catalysts on the hot (Pd/θ-Al2O3) and cold (Pt/α-Al2O3) ends of the device. The device comprises a calorimeter with a thermoelectric gas sensor (calorimetric-TGS), combining catalytic combustion and thermoelectric technologies. Its response for a model fuel gas of hydrogen and methane was investigated with various combustor catalyst compositions. The calorimetric-TGS devices detected H2, CH4, and a mixture of the two with concentrations ranging between 200 and 2000 ppm at temperatures of 100–400 °C, in terms of the calorie content of the gases. It was necessary to reduce the much higher response voltage of the TGS to H2 compared to CH4. We enhanced the H2 combustion on the cold side so that the temperature differences and response voltages to H2 were reduced. The device response to H2 combustion was reduced by 50% by controlling the Pt concentration in the Pt/α-Al2O3 catalyst on the cold side to 3 wt%. PMID:24818660

Fabrication of multiwall carbon nanotube sheet based hydrogen sensor on a stacking multi-layer structure.

PubMed

Yan, Keyi; Toku, Yuhki; Morita, Yasuyuki; Ju, Yang

2018-06-22

In this research, we propose a new simple method to fabricate hydrogen gas sensor by stacking the multiwall carbon nanotube (MWCNT) sheets. MWCNT sheet offers a larger surface area and more CNT contacts, which are key factors for gas sensing, because of its super-high alignment and end-to-end structure comparing to the traditional CNT film. Besides, MWCNT sheet can be directly drawn from the spinnable CNT array in large scales. Therefore, this method is a potential answer for the mass production and commercialization of CNT based sensor with high response. By stacking different layers of sheet, microstructure and CNT interactions in the layers were changed and their influences towards gas sensing were investigated. It was observed that the sample with 3 layers of sheet and functionalized with 3 nm-thick Pd showed the best gas sensing performance with a response of 12.31% at 4% H2 and response time below 200 s. © 2018 IOP Publishing Ltd.

Diodes of nanocrystalline SiC on n-/n+-type epitaxial crystalline 6H-SiC

NASA Astrophysics Data System (ADS)

Zheng, Junding; Wei, Wensheng; Zhang, Chunxi; He, Mingchang; Li, Chang

2018-03-01

The diodes of nanocrystalline SiC on epitaxial crystalline (n-/n+)6H-SiC wafers were investigated, where the (n+)6H-SiC layer was treated as cathode. For the first unit, a heavily boron doped SiC film as anode was directly deposited by plasma enhanced chemical vapor deposition method on the wafer. As to the second one, an intrinsic SiC film was fabricated to insert between the wafer and the SiC anode. The third one included the SiC anode, an intrinsic SiC layer and a lightly phosphorus doped SiC film besides the wafer. Nanocrystallization in the yielded films was illustrated by means of X-ray diffraction, transmission electronic microscope and Raman spectrum respectively. Current vs. voltage traces of the obtained devices were checked to show as rectifying behaviors of semiconductor diodes, the conduction mechanisms were studied. Reverse recovery current waveforms were detected to analyze the recovery performance. The nanocrystalline SiC films in base region of the fabricated diodes are demonstrated as local regions for lifetime control of minority carriers to improve the reverse recovery properties.

Sniffer used as portable hydrogen leak detector

NASA Technical Reports Server (NTRS)

Dayan, V. H.; Rommel, M. A.

1966-01-01

Sniffer type portable monitor detects hydrogen in air, oxygen, nitrogen, or helium. It indicates the presence of hydrogen in contact with activated palladium black by a change in color of a thermochromic paint, and indicates the quantity of hydrogen by a sensor probe and continuous readout.

Ultra-Low-Cost Room Temperature SiC Thin Films

NASA Technical Reports Server (NTRS)

Faur, Maria

1997-01-01

The research group at CSU has conducted theoretical and experimental research on 'Ultra-Low-Cost Room Temperature SiC Thin Films. The effectiveness of a ultra-low-cost room temperature thin film SiC growth technique on Silicon and Germanium substrates and structures with applications to space solar sells, ThermoPhotoVoltaic (TPV) cells and microelectronic and optoelectronic devices was investigated and the main result of this effort are summarized.

Preparation of Sic/AIN Solid Solutions Using Organometallic Precursors

DTIC Science & Technology

1989-02-15

pyrolysis of organoaluminum and organosilicon compounds was investigated as a potential source of SiC /AUI solid solutions. Using two different co... pyrolysis methods, homogeneous mixtures of organoaluminum amides and both a vinylic polysilane and a poly- carbosilane were convertec to a preceramic ...solid that transformed to crystalline SiC /AiN solid solutions at 򒸀 C. Moreover, the liquid, polymeric , form of these precursor mixtures provides a

Effect of SiC particle size on the microstructure and properties of cold-sprayed Al/SiCp composite coating

NASA Astrophysics Data System (ADS)

Yu, Min; Hua, Junwei

2017-07-01

The Al5056/SiC composite coatings were prepared by cold spraying. Experimental results show that the SiC content in the composite coating deposited with the SiC powder having an average size of 67 μm (Al5056/SiC-67) is similar to that deposited with the SiC powder having an average size of 27 μm (Al5056/SiC-27). The microhardness and cohesion strength of Al5056/SiC-67 coating are higher than those of the Al5056/SiC-27 coating. In addition, the Al5056/SiC-67 coating having a superior wear resistance because of the coarse SiC powder with a superior kinetic energy contributes to the deformation resistance of the matrix Al5056 particles.

Technological state of the art of SiC

NASA Astrophysics Data System (ADS)

Tyc, Stdphane

1993-10-01

In a recent paper [1], Locatelli and Gamal describe the technological state of the art of SiC compared with Si. I would like to bear witness to the rapid advancement of SiC technology by giving a slighty updated account of SiC technology. The boule growth of SiC now achieves diameters up to 60 mm. One of the most problematic standing issues is the presence of micropipes in the wafers with a density of the order of 100 cm^{-2} or more [2]. The doping range available in epilayers is now wider. CAFE Research [3] accepts orders for doping densities from 5 × 10^{15} cm^{-3} to 1 × 10^{19} cm^{-3} in both N and P type. However their state of the art is better (we have received P type with doping 4 × 10^{14} cm^{-3} and N type with doping over 2 × 10^{19} cm^{-3} and they have also delivered [4] N type doping of 5 × 10^{14} cm^{-3}). As for large P dopings, Dmitriev has published [5] dopings over 10^{20} cm^{-3} The specific resistance of contacts on N type layers has also rapidly improved. Kelner has published results of 3 × 10^{-6} Ohm.cm2 with Ni contacts [6]. We have obtained with molybdenum [7] specific resistances of 2 × 10^{-5} Ohm.cm2 on epitaxies doped to 5 × 10^{18} cm^{-3} This value should be rapidly lowered as higher doped layers are used. In sum, I do agree with the authors of [1] that the technology of 6H SiC is rapidly advancing, thanks to breakthroughs in material growth and to a wide ranging renewed interest in this material. The pace may actually be higher than hitherto realized. References: [1] Locatelli and Gamal, J. Phys. III France 3 (1993) 1101. [2] Barret D. L. et al., Tenth Int. Conf. on Crystal Growth, San Diego, CA, USA 16-21 (August 1992). [3] CREE Research Inc., 2810 Meridian Parkway, Durham, NC 27713, USA. [4] Parrish M., private communication. [5] Dmitriev et al., Ext. Abstracts of the Electrochemical Soc. Meeting, 4, 89-2 (1989) 711. [6] Workshop on SiC Material and Devices (Charlottesville, September 10-11 1992) VA 22901. [7] Tyc

Silicon Carbide (SiC) MOSFET-based Full-Bridge for Fusion Science Applications

NASA Astrophysics Data System (ADS)

Ziemba, Timothy; Miller, Kenneth; Prager, James; Picard, Julian; Hashim, Akel

2014-10-01

Switching power amplifiers (SPAs) have a wide variety of applications within the fusion science community, including feedback and control systems for dynamic plasma stabilization in tokamaks, inductive and arc plasma sources, Radio Frequency (RF) helicity and flux injection, RF plasma heating and current drive schemes, ion beam generation, and RF pre-ionizer systems. SiC MOSFETs offer many advantages over IGBTs including lower drive energy requirements, lower conduction and switching losses, and higher switching frequency capabilities. When comparing SiC and traditional silicon-based MOSFETs, SiC MOSFETs provide higher current carrying capability allowing for smaller package weights and sizes and lower operating temperature. Eagle Harbor Technologies (EHT) is designing, constructing, and testing a SiC MOSFET-based full-bridge SPA. EHT will leverage the proprietary gate drive technology previously developed with the support of a DOE SBIR, which will enable fast, efficient switching in a small form factor. The primary goal is to develop a SiC MOSFET-based SPA for fusion science applications. Work supported in part by the DOE under Contract Number DE-SC0011907.

SiC Multi-Chip Power Modules as Power-System Building Blocks

NASA Technical Reports Server (NTRS)

Lostetter, Alexander; Franks, Steven

2007-01-01

The term "SiC MCPMs" (wherein "MCPM" signifies "multi-chip power module") denotes electronic power-supply modules containing multiple silicon carbide power devices and silicon-on-insulator (SOI) control integrated-circuit chips. SiC MCPMs are being developed as building blocks of advanced expandable, reconfigurable, fault-tolerant power-supply systems. Exploiting the ability of SiC semiconductor devices to operate at temperatures, breakdown voltages, and current densities significantly greater than those of conventional Si devices, the designs of SiC MCPMs and of systems comprising multiple SiC MCPMs are expected to afford a greater degree of miniaturization through stacking of modules with reduced requirements for heat sinking. Moreover, the higher-temperature capabilities of SiC MCPMs could enable operation in environments hotter than Si-based power systems can withstand. The stacked SiC MCPMs in a given system can be electrically connected in series, parallel, or a series/parallel combination to increase the overall power-handling capability of the system. In addition to power connections, the modules have communication connections. The SOI controllers in the modules communicate with each other as nodes of a decentralized control network, in which no single controller exerts overall command of the system. Control functions effected via the network include synchronization of switching of power devices and rapid reconfiguration of power connections to enable the power system to continue to supply power to a load in the event of failure of one of the modules. In addition to serving as building blocks of reliable power-supply systems, SiC MCPMs could be augmented with external control circuitry to make them perform additional power-handling functions as needed for specific applications: typical functions could include regulating voltages, storing energy, and driving motors. Because identical SiC MCPM building blocks could be utilized in a variety of ways, the cost

The Development of SiC MOSFET-based Switching Power Amplifiers for Fusion Science

NASA Astrophysics Data System (ADS)

Prager, James; Ziemba, Timothy; Miller, Kenneth; Picard, Julian

2015-11-01

Eagle Harbor Technologies (EHT), Inc. is developing a switching power amplifier (SPA) based on silicon carbide (SiC) metal-oxide-semiconductor field-effect transistor (MOSFET). SiC MOSFETs offer many advantages over IGBTs including lower drive energy requirements, lower conduction and switching losses, and higher switching frequency capabilities. When comparing SiC and traditional silicon-based MOSFETs, SiC MOSFETs provide higher current carrying capability allowing for smaller package weights and sizes and lower operating temperature. EHT has conducted single device testing that directly compares the capabilities of SiC MOSFETs and IGBTs to demonstrate the utility of SiC MOSFETs for fusion science applications. These devices have been built into a SPA that can drive resistive loads and resonant tank loads at 800 V, 4.25 kA at pulse repetition frequencies up to 1 MHz. During the Phase II program, EHT will finalize the design of the SPA. In Year 2, EHT will replace the SPAs used in the HIT-SI lab at the University of Washington to allow for operation over 100 kHz. SPA prototype results will be presented. This work is supported under DOE Grant # DE-SC0011907.

Ultrasensitive hydrogen sensor based on Pt-decorated WO₃ nanorods prepared by glancing-angle dc magnetron sputtering.

PubMed

Horprathum, M; Srichaiyaperk, T; Samransuksamer, B; Wisitsoraat, A; Eiamchai, P; Limwichean, S; Chananonnawathorn, C; Aiempanakit, K; Nuntawong, N; Patthanasettakul, V; Oros, C; Porntheeraphat, S; Songsiriritthigul, P; Nakajima, H; Tuantranont, A; Chindaudom, P

2014-12-24

In this work, we report an ultrasensitive hydrogen (H2) sensor based on tungsten trioxide (WO3) nanorods decorated with platinum (Pt) nanoparticles. WO3 nanorods were fabricated by dc magnetron sputtering with a glancing angle deposition (GLAD) technique, and decorations of Pt nanoparticles were performed by normal dc sputtering on WO3 nanorods with varying deposition time from 2.5 to 15 s. Crystal structures, morphologies, and chemical information on Pt-decorated WO3 nanorods were characterized by grazing-incident X-ray diffraction, field-emission scanning electron microscopy, energy-dispersive X-ray spectroscopy, and photoelectron spectroscopy, respectively. The effect of the Pt nanoparticles on the H2-sensing performance of WO3 nanorods was investigated over a low concentration range of 150-3000 ppm of H2 at 150-350 °C working temperatures. The results showed that the H2 response greatly increased with increasing Pt-deposition time up to 10 s but then substantially deteriorated as the deposition time increased further. The optimally decorated Pt-WO3 nanorod sensor exhibited an ultrahigh H2 response from 1530 and 214,000 to 150 and 3000 ppm of H2, respectively, at 200 °C. The outstanding gas-sensing properties may be attributed to the excellent dispersion of fine Pt nanoparticles on WO3 nanorods having a very large effective surface area, leading to highly effective spillover of molecular hydrogen through Pt nanoparticles onto the WO3 nanorod surface.

Ba isotopic compositions in stardust SiC grains from the Murchison meteorite: Insights into the stellar origins of large SiC grains

NASA Astrophysics Data System (ADS)

Ávila, Janaína N.; Ireland, Trevor R.; Gyngard, Frank; Zinner, Ernst; Mallmann, Guilherme; Lugaro, Maria; Holden, Peter; Amari, Sachiko

2013-11-01

We report barium isotopic measurements in 12 large (7-58 μm) stardust silicon carbide grains recovered from the Murchison carbonaceous chondrite. The C-, N-, and Si-isotopic compositions indicate that all 12 grains belong to the mainstream population and, as such, are interpreted to have condensed in the outflows of low-mass carbon-rich asymptotic giant branch (AGB) stars with close-to-solar metallicity. Barium isotopic analyses were carried out on the Sensitive High Resolution Ion Microprobe - Reverse Geometry (SHRIMP-RG) with combined high mass resolution and energy filtering to eliminate isobaric interferences from molecular ions. Contrary to previous measurements in small (<5 μm) mainstream grains, the analyzed large SiC grains do not show the classical s-process enrichment, having near solar Ba isotopic compositions. While contamination with solar material is a common explanation for the lack of large isotopic anomalies in stardust SiC grains, particularly for these large grains which have low trace element abundances, our results are consistent with previous observations that Ba isotopic ratios are dependent on grain size. We have compared the SiC data with theoretical predictions of the evolution of Ba isotopic ratios in the envelopes of low-mass AGB stars with a range of stellar masses and metallicities. The Ba isotopic measurements obtained for large SiC grains from the LS + LU fractions are consistent with grain condensation in the envelope of very low-mass AGB stars (1.25 M⊙) with close-to-solar metallicity, which suggests that conditions for growth of large SiC might be more favorable in very low-mass AGB stars during the early C-rich stages of AGB evolution or in stable structures around AGB stars whose evolution was cut short due to binary interaction, before the AGB envelope had already been largely enriched with the products of s-process nucleosynthesis.

SIC-POVMS and MUBS: Geometrical Relationships in Prime Dimension

NASA Astrophysics Data System (ADS)

Appleby, D. M.

2009-03-01

The paper concerns Weyl-Heisenberg covariant SIC-POVMs (symmetric informationally complete positive operator valued measures) and full sets of MUBs (mutually unbiased bases) in prime dimension. When represented as vectors in generalized Bloch space a SIC-POVM forms a d2-1 dimensional regular simplex (d being the Hilbert space dimension). By contrast, the generalized Bloch vectors representing a full set of MUBs form d+1 mutually orthogonal d-1 dimensional regular simplices. In this paper we show that, in the Weyl-Heisenberg case, there are some simple geometrical relationships between the single SIC-POVM simplex and the d+1 MUB simplices. We go on to give geometrical interpretations of the minimum uncertainty states introduced by Wootters and Sussman, and by Appleby, Dang and Fuchs, and of the fiduciality condition given by Appleby, Dang and Fuchs.

Ultralight, Recoverable, and High-Temperature-Resistant SiC Nanowire Aerogel.

PubMed

Su, Lei; Wang, Hongjie; Niu, Min; Fan, Xingyu; Ma, Mingbo; Shi, Zhongqi; Guo, Sheng-Wu

2018-04-24

Ultralight ceramic aerogels with the property combination of recoverable compressibility and excellent high-temperature stability are attractive for use in harsh environments. However, conventional ceramic aerogels are usually constructed by oxide ceramic nanoparticles, and their practical applications have always been limited by the brittle nature of ceramics and volume shrinkage at high temperature. Silicon carbide (SiC) nanowire offers the integrated properties of elasticity and flexibility of one-dimensional (1D) nanomaterials and superior high-temperature thermal and chemical stability of SiC ceramics, which makes it a promising building block for compressible ceramic nanowire aerogels (NWAs). Here, we report the fabrication and properties of a highly porous three-dimensional (3D) SiC NWA assembled by a large number of interweaving 3C-SiC nanowires of 20-50 nm diameter and tens to hundreds of micrometers in length. The SiC NWA possesses ultralow density (∼5 mg cm -3 ), excellent mechanical properties of large recoverable compression strain (>70%) and fatigue resistance, refractory property, oxidation and high-temperature resistance, and thermal insulating property (0.026 W m -1 K -1 at room temperature in N 2 ). When used as absorbents, the SiC NWAs exhibit an adsorption selectivity of low-viscosity organic solvents with high absorption capacity (130-237 g g -1 ). The successful fabrication of such an attractive material may provide promising perspectives to the design and fabrication of other compressible and multifunctional ceramic NWAs.

Properties of Resistive Hydrogen Sensors as a Function of Additives of 3 D-Metals Introduced in the Volume of Thin Nanocrystalline SnO2 Films

NASA Astrophysics Data System (ADS)

Sevast'yanov, E. Yu.; Maksimova, N. K.; Potekaev, A. I.; Sergeichenko, N. V.; Chernikov, E. V.; Almaev, A. V.; Kushnarev, B. O.

2017-11-01

Analysis of the results of studying electrical and gas sensitive characteristics of the molecular hydrogen sensors based on thin nanocrystalline SnO2 films coated with dispersed Au layers and containing Au+Ni and Au+Co impurities in the bulk showed that the characteristics of these sensors are more stable under the prolonged exposure to hydrogen in comparison with Au/SnO2:Sb, Au films modified only with gold. It has been found that introduction of the nickel and cobalt additives increases the band bending at the grain boundaries of tin dioxide already in freshly prepared samples, which indicates an increase in the density Ni of the chemisorbed oxygen. It is important that during testing, the band bending eφs at the grain boundaries of tin dioxide additionally slightly increases. It can be assumed that during crystallization of films under thermal annealing, the 3d-metal atoms in the SnO2 volume partially segregate on the surface of microcrystals and form bonds with lattice oxygen, the superstoichiometric tin atoms are formed, and the density Ni increases. If the bonds of oxygen with nickel and cobalt are stronger than those with tin, then, under the prolonged tests, atomic hydrogen will be oxidized not by lattice oxygen, but mainly by the chemisorbed one. In this case, stability of the sensors' characteristics increases.

Synthesis of Ti3AuC2, Ti3Au2C2 and Ti3IrC2 by noble metal substitution reaction in Ti3SiC2 for high-temperature-stable Ohmic contacts to SiC

NASA Astrophysics Data System (ADS)

Fashandi, Hossein; Dahlqvist, Martin; Lu, Jun; Palisaitis, Justinas; Simak, Sergei I.; Abrikosov, Igor A.; Rosen, Johanna; Hultman, Lars; Andersson, Mike; Lloyd Spetz, Anita; Eklund, Per

2017-08-01

The large class of layered ceramics encompasses both van der Waals (vdW) and non-vdW solids. While intercalation of noble metals in vdW solids is known, formation of compounds by incorporation of noble-metal layers in non-vdW layered solids is largely unexplored. Here, we show formation of Ti3AuC2 and Ti3Au2C2 phases with up to 31% lattice swelling by a substitutional solid-state reaction of Au into Ti3SiC2 single-crystal thin films with simultaneous out-diffusion of Si. Ti3IrC2 is subsequently produced by a substitution reaction of Ir for Au in Ti3Au2C2. These phases form Ohmic electrical contacts to SiC and remain stable after 1,000 h of ageing at 600 °C in air. The present results, by combined analytical electron microscopy and ab initio calculations, open avenues for processing of noble-metal-containing layered ceramics that have not been synthesized from elemental sources, along with tunable properties such as stable electrical contacts for high-temperature power electronics or gas sensors.

A comparative study on electrical characteristics of 1-kV pnp and npn SiC bipolar junction transistors

NASA Astrophysics Data System (ADS)

Okuda, Takafumi; Kimoto, Tsunenobu; Suda, Jun

2018-04-01

We investigate the electrical characteristics of 1-kV pnp SiC bipolar junction transistors (BJTs) and compare them with those of npn SiC BJTs. The base resistance, current gain, and blocking capability are characterized. It is found that the base resistance of pnp SiC BJTs is two orders of magnitude lower than that of npn SiC BJTs. However, the obtained current gains are low below unity in pnp SiC BJTs, whereas npn SiC BJTs exhibit a current gain of 14 without surface passivation. The reason for the poor current gain of pnp SiC BJTs is discussed.

SiC lightweight telescopes for advanced space applications. II - Structures technology

NASA Technical Reports Server (NTRS)

Anapol, Michael I.; Hadfield, Peter; Tucker, Theodore

1992-01-01

A critical technology area for lightweight SiC-based telescope systems is the structural integrity and thermal stability over spaceborne environmental launch and thermal operating conditions. Note, it is highly desirable to have an inherently athermal design of both SiC mirrors and structure. SSG has developed an 8 inch diameter SiC telescope system for brassboard level optical and thermal testing. The brassboard telescope has demonstrated less than 0.2 waves P-V in the visible wavefront change over +50 C to -200 C temperature range. SSG has also fabricated a SiC truss structural assembly and successfully qualified this hardware at environmental levels greater than 3 times higher than normal Delta, Titan, and ARIES launch loads. SSG is currently developing two SiC telescopes; an 20 cm diameter off-axis 3 mirror re-imaging and a 60 cm aperture on-axis 3 mirror re-imager. Both hardware developments will be tested to flight level environmental, optical, and thermal specifications.

Nanoparticle-density-dependent field emission of surface-decorated SiC nanowires

DOE Office of Scientific and Technical Information (OSTI.GOV)

Dong, Qizheng; School of Materials and Chemical Engineering, Ningbo University of Technology, Ningbo City 315016; State Key Lab of New Fine Ceramics and Fine Processing, Tsinghua University, Beijing City 100084

2016-08-22

Increasing the electron emission site density of nanostructured emitters with limited field screening effects is one of the key issues for improving the field emission (FE) properties. In this work, we reported the Au-nanoparticles-density-dependent field emission behaviors of surface-decorated SiC nanowires. The Au nanoparticles (AuNPs) decorated around the surface of the SiC nanowires were achieved via an ion sputtering technique, by which the densities of the isolated AuNPs could be adjusted by controlling the fixed sputtering times. The measured FE characteristics demonstrated that the turn-on fields of the SiC nanowires were tuned to be of 2.06, 1.14, and 3.35 V/μm withmore » the increase of the decorated AuNPs densities, suggesting that a suitable decorated AuNPs density could render the SiC nanowires with totally excellent FE performances by increasing the emission sites and limiting the field screening effects.« less

Freestanding ultrathin single-crystalline SiC substrate by MeV H ion-slicing

NASA Astrophysics Data System (ADS)

Jia, Qi; Huang, Kai; You, Tiangui; Yi, Ailun; Lin, Jiajie; Zhang, Shibin; Zhou, Min; Zhang, Bin; Zhang, Bo; Yu, Wenjie; Ou, Xin; Wang, Xi

2018-05-01

SiC is a widely used wide-bandgap semiconductor, and the freestanding ultrathin single-crystalline SiC substrate provides the material platform for advanced devices. Here, we demonstrate the fabrication of a freestanding ultrathin single-crystalline SiC substrate with a thickness of 22 μm by ion slicing using 1.6 MeV H ion implantation. The ion-slicing process performed in the MeV energy range was compared to the conventional case using low-energy H ion implantation in the keV energy range. The blistering behavior of the implanted SiC surface layer depends on both the implantation temperature and the annealing temperature. Due to the different straggling parameter for two implant energies, the distribution of implantation-induced damage is significantly different. The impact of implantation temperature on the high-energy and low-energy slicing was opposite, and the ion-slicing SiC in the MeV range initiates at a much higher temperature.

Detection and analysis of particles with failed SiC in AGR-1 fuel compacts

DOE PAGES

Hunn, John D.; Baldwin, Charles A.; Gerczak, Tyler J.; ...

2016-04-06

As the primary barrier to release of radioactive isotopes emitted from the fuel kernel, retention performance of the SiC layer in tristructural isotropic (TRISO) coated particles is critical to the overall safety of reactors that utilize this fuel design. Most isotopes are well-retained by intact SiC coatings, so pathways through this layer due to cracking, structural defects, or chemical attack can significantly contribute to radioisotope release. In the US TRISO fuel development effort, release of 134Cs and 137Cs are used to detect SiC failure during fuel compact irradiation and safety testing because the amount of cesium released by a compactmore » containing one particle with failed SiC is typically ten or more times higher than that released by compacts without failed SiC. Compacts with particles that released cesium during irradiation testing or post-irradiation safety testing at 1600–1800 °C were identified, and individual particles with abnormally low cesium retention were sorted out with the Oak Ridge National Laboratory (ORNL) Irradiated Microsphere Gamma Analyzer (IMGA). X-ray tomography was used for three-dimensional imaging of the internal coating structure to locate low-density pathways through the SiC layer and guide subsequent materialography by optical and scanning electron microscopy. In addition, all three cesium-releasing particles recovered from as-irradiated compacts showed a region where the inner pyrocarbon (IPyC) had cracked due to radiation-induced dimensional changes in the shrinking buffer and the exposed SiC had experienced concentrated attack by palladium; SiC failures observed in particles subjected to safety testing were related to either fabrication defects or showed extensive Pd corrosion through the SiC where it had been exposed by similar IPyC cracking.« less

Men Working on Mock-Up of S-IC Thrust Structure

NASA Technical Reports Server (NTRS)

1963-01-01

This photograph depicts Marshall Space Flight Center employees, James Reagin, machinist (top); Floyd McGinnis, machinist; and Ernest Davis, experimental test mechanic (foreground), working on a mock up of the S-IC thrust structure. The S-IC stage is the first stage, or booster, of the 364-foot long Saturn V rocket that ultimately took astronauts to the Moon. The S-IC stage, burned over 15 tons of propellant per second during its 2.5 minutes of operation to take the vehicle to a height of about 36 miles and to a speed of about 6,000 miles per hour. The stage was 138 feet long and 33 feet in diameter. Operating at maximum power, all five of the engines produced 7,500,000 pounds of thrust.

SiC Composite for Fuel Structure Applications

DOE Office of Scientific and Technical Information (OSTI.GOV)

Yueh, Ken

Extensive evaluation was performed to determine the suitability of using SiC composite as a boiling water reactor (BWR) fuel channel material. A thin walled SiC composite box, 10 cm in dimension by approximately 1.5 mm wall thickness was fabricated using chemical vapor deposition (CVD) for testing. Mechanical test results and performance evaluations indicate the material could meet BWR channel mechanical design requirement. However, large mass loss of up to 21% was measured in in-pile corrosion test under BWR-like conditions in under 3 months of irradiation. A fresh sister sample irradiated in a follow-up cycle under PWR conditions showed no measureablemore » weight loss and thus supports the hypothesis that the oxidizing condition of the BWR-like coolant chemistry was responsible for the high corrosion rate. A thermodynamic evaluation showed SiC is not stable and the material may oxidize to form SiO 2 and CO 2. Silica has demonstrated stability in high temperature steam environment and form a protective oxide layer under severe accident conditions. However, it does not form a protective layer in water under normal BWR operational conditions due to its high solubility. Corrosion product stabilization by modifying the SiC CVD surface is an approach evaluated in this study to mitigate the high corrosion rate. Titanium and zirconium have been selected as stabilizing elements since both TiSiO 4 and ZrSiO 4 are insoluble in water. Corrosion test results in oxygenated water autoclave indicate TiSiO4 does not form a protective layer. However, zirconium doped test samples appear to form a stable continuous layer of ZrSiO 4 during the corrosion process. Additional process development is needed to produce a good ZrSiC coating to verify functionality of the mitigation concept.« less

Effects of SiC whiskers and particles on precipitation in aluminum matrix composites

NASA Astrophysics Data System (ADS)

Papazian, John M.

1988-12-01

The age-hardening precipitation reactions in aluminum matrix composites reinforced with discontinuous SiC were studied using a calorimetric technique. Composites fabricated with 2124, 2219, 6061, and 7475 alloy matrices were obtained from commercial sources along with unreinforced control materials fabricated in a similar manner. The 7475 materials were made by a casting process while the others were made by powder metallurgy: the SiC reinforcement was in the form of whiskers or particulate. It was found that the overall age-hardening sequence of the alloy was not changed by the addition of SiC, but that the volume fractions of various phases and the precipitation kinetics were substantially modified. Precipitation and dissolution kinetics were generally accelerated. A substantial portion of this acceleration was found to be due to the powder metallurgy process employed to make the composites, but the formation kinetics of some particular precipitate phases were also strongly affected by the presence of SiC. It was observed that the volume fraction of GP zones able to form in the SiC containing materials was significantly reduced. The presence of SiC particles also caused normally quench insensitive materials such as 6061 to become quench sensitive. The microstructural origins of these effects are discussed.

PhySIC_IST: cleaning source trees to infer more informative supertrees

PubMed Central

Scornavacca, Celine; Berry, Vincent; Lefort, Vincent; Douzery, Emmanuel JP; Ranwez, Vincent

2008-01-01

Background Supertree methods combine phylogenies with overlapping sets of taxa into a larger one. Topological conflicts frequently arise among source trees for methodological or biological reasons, such as long branch attraction, lateral gene transfers, gene duplication/loss or deep gene coalescence. When topological conflicts occur among source trees, liberal methods infer supertrees containing the most frequent alternative, while veto methods infer supertrees not contradicting any source tree, i.e. discard all conflicting resolutions. When the source trees host a significant number of topological conflicts or have a small taxon overlap, supertree methods of both kinds can propose poorly resolved, hence uninformative, supertrees. Results To overcome this problem, we propose to infer non-plenary supertrees, i.e. supertrees that do not necessarily contain all the taxa present in the source trees, discarding those whose position greatly differs among source trees or for which insufficient information is provided. We detail a variant of the PhySIC veto method called PhySIC_IST that can infer non-plenary supertrees. PhySIC_IST aims at inferring supertrees that satisfy the same appealing theoretical properties as with PhySIC, while being as informative as possible under this constraint. The informativeness of a supertree is estimated using a variation of the CIC (Cladistic Information Content) criterion, that takes into account both the presence of multifurcations and the absence of some taxa. Additionally, we propose a statistical preprocessing step called STC (Source Trees Correction) to correct the source trees prior to the supertree inference. STC is a liberal step that removes the parts of each source tree that significantly conflict with other source trees. Combining STC with a veto method allows an explicit trade-off between veto and liberal approaches, tuned by a single parameter. Performing large-scale simulations, we observe that STC+PhySIC_IST infers much

PhySIC_IST: cleaning source trees to infer more informative supertrees.

PubMed

Scornavacca, Celine; Berry, Vincent; Lefort, Vincent; Douzery, Emmanuel J P; Ranwez, Vincent

2008-10-04

Supertree methods combine phylogenies with overlapping sets of taxa into a larger one. Topological conflicts frequently arise among source trees for methodological or biological reasons, such as long branch attraction, lateral gene transfers, gene duplication/loss or deep gene coalescence. When topological conflicts occur among source trees, liberal methods infer supertrees containing the most frequent alternative, while veto methods infer supertrees not contradicting any source tree, i.e. discard all conflicting resolutions. When the source trees host a significant number of topological conflicts or have a small taxon overlap, supertree methods of both kinds can propose poorly resolved, hence uninformative, supertrees. To overcome this problem, we propose to infer non-plenary supertrees, i.e. supertrees that do not necessarily contain all the taxa present in the source trees, discarding those whose position greatly differs among source trees or for which insufficient information is provided. We detail a variant of the PhySIC veto method called PhySIC_IST that can infer non-plenary supertrees. PhySIC_IST aims at inferring supertrees that satisfy the same appealing theoretical properties as with PhySIC, while being as informative as possible under this constraint. The informativeness of a supertree is estimated using a variation of the CIC (Cladistic Information Content) criterion, that takes into account both the presence of multifurcations and the absence of some taxa. Additionally, we propose a statistical preprocessing step called STC (Source Trees Correction) to correct the source trees prior to the supertree inference. STC is a liberal step that removes the parts of each source tree that significantly conflict with other source trees. Combining STC with a veto method allows an explicit trade-off between veto and liberal approaches, tuned by a single parameter.Performing large-scale simulations, we observe that STC+PhySIC_IST infers much more informative

Construction Progress of the S-IC Test Stand Complex Bunker House

NASA Technical Reports Server (NTRS)

1963-01-01

At its founding, the Marshall Space Flight Center (MSFC) inherited the Army's Jupiter and Redstone test stands, but much larger facilities were needed for the giant stages of the Saturn V. From 1960 to 1964, the existing stands were remodeled and a sizable new test area was developed. The new comprehensive test complex for propulsion and structural dynamics was unique within the nation and the free world, and they remain so today because they were constructed with foresight to meet the future as well as on going needs. Construction of the S-IC Static test stand complex began in 1961 in the west test area of MSFC, and was completed in 1964. The S-IC static test stand was designed to develop and test the 138-ft long and 33-ft diameter Saturn V S-IC first stage, or booster stage, weighing in at 280,000 pounds. Required to hold down the brute force of a 7,500,000-pound thrust produced by 5 F-1 engines, the S-IC static test stand was designed and constructed with the strength of hundreds of tons of steel and 12,000,000 pounds of cement, planted down to bedrock 40 feet below ground level. The foundation walls, constructed with concrete and steel, are 4 feet thick. The base structure consists of four towers with 40-foot-thick walls extending upward 144 feet above ground level. The structure was topped by a crane with a 135-foot boom. With the boom in the upright position, the stand was given an overall height of 405 feet, placing it among the highest structures in Alabama at the time. In addition to the S-IC stand, additional related facilities were built during this time frame. Built to the east of the S-IC stand, the block house served as the control room. To the south of the blockhouse was a newly constructed pump house used for delivering water to the S-IC stand during testing. North of the massive test stand, the F-1 Engine test stand was built for testing a single F-1 engine. Just southeast of the S-IC stand a concrete bunker house was constructed. The bunker housed

Mechanical property degradation of high crystalline SiC fiber–reinforced SiC matrix composite neutron irradiated to ~100 displacements per atom

DOE PAGES

Koyanagi, Takaaki; Nozawa, Takashi; Katoh, Yutai; ...

2017-12-20

For the development of silicon carbide (SiC) materials for next-generation nuclear structural applications, degradation of material properties under intense neutron irradiation is a critical feasibility issue. This paper evaluated the mechanical properties and microstructure of a chemical vapor infiltrated SiC matrix composite, reinforced with a multi-layer SiC/pyrolytic carbon–coated Hi-Nicalon TM Type S SiC fiber, following neutron irradiation at 319 and 629 °C to ~100 displacements per atom. Both the proportional limit stress and ultimate flexural strength were significantly degraded as a result of irradiation at both temperatures. After irradiation at 319 °C, the quasi-ductile fracture behavior of the nonirradiated compositemore » became brittle, a result that was explained by a loss of functionality of the fiber/matrix interface associated with the disappearance of the interphase due to irradiation. Finally, the specimens irradiated at 629 °C showed increased apparent failure strain because the fiber/matrix interphase was weakened by irradiation-induced partial debonding.« less

Mechanical property degradation of high crystalline SiC fiber–reinforced SiC matrix composite neutron irradiated to ~100 displacements per atom

DOE Office of Scientific and Technical Information (OSTI.GOV)

Koyanagi, Takaaki; Nozawa, Takashi; Katoh, Yutai

For the development of silicon carbide (SiC) materials for next-generation nuclear structural applications, degradation of material properties under intense neutron irradiation is a critical feasibility issue. This paper evaluated the mechanical properties and microstructure of a chemical vapor infiltrated SiC matrix composite, reinforced with a multi-layer SiC/pyrolytic carbon–coated Hi-Nicalon TM Type S SiC fiber, following neutron irradiation at 319 and 629 °C to ~100 displacements per atom. Both the proportional limit stress and ultimate flexural strength were significantly degraded as a result of irradiation at both temperatures. After irradiation at 319 °C, the quasi-ductile fracture behavior of the nonirradiated compositemore » became brittle, a result that was explained by a loss of functionality of the fiber/matrix interface associated with the disappearance of the interphase due to irradiation. Finally, the specimens irradiated at 629 °C showed increased apparent failure strain because the fiber/matrix interphase was weakened by irradiation-induced partial debonding.« less

A New Method to Grow SiC: Solvent-Laser Heated Floating Zone

NASA Technical Reports Server (NTRS)

Woodworth, Andrew A.; Neudeck, Philip G.; Sayir, Ali

2012-01-01

The solvent-laser heated floating zone (solvent-LHFZ) growth method is being developed to grow long single crystal SiC fibers. The technique combines the single crystal fiber growth ability of laser heated floating zone with solvent based growth techniques (e.g. traveling solvent method) ability to grow SiC from the liquid phase. Initial investigations reported in this paper show that the solvent-LHFZ method readily grows single crystal SiC (retains polytype and orientation), but has a significant amount of inhomogeneous strain and solvent rich inclusions.

Automated Hydrogen Gas Leak Detection System

NASA Technical Reports Server (NTRS)

1995-01-01

The Gencorp Aerojet Automated Hydrogen Gas Leak Detection System was developed through the cooperation of industry, academia, and the Government. Although the original purpose of the system was to detect leaks in the main engine of the space shuttle while on the launch pad, it also has significant commercial potential in applications for which there are no existing commercial systems. With high sensitivity, the system can detect hydrogen leaks at low concentrations in inert environments. The sensors are integrated with hardware and software to form a complete system. Several of these systems have already been purchased for use on the Ford Motor Company assembly line for natural gas vehicles. This system to detect trace hydrogen gas leaks from pressurized systems consists of a microprocessor-based control unit that operates a network of sensors. The sensors can be deployed around pipes, connectors, flanges, and tanks of pressurized systems where leaks may occur. The control unit monitors the sensors and provides the operator with a visual representation of the magnitude and locations of the leak as a function of time. The system can be customized to fit the user's needs; for example, it can monitor and display the condition of the flanges and fittings associated with the tank of a natural gas vehicle.

Seroprevalence of Streptococcal Inhibitor of Complement (SIC) suggests association of streptococcal infection with chronic kidney disease

PubMed Central

2013-01-01

Background Group A streptococcus (GAS) is an etiological agent for the immune mediated sequela post streptococcal glomerulonephritis (PSGN). In some populations PSGN is recognized as a risk factor for chronic kidney disease (CKD) and end-stage renal disease (ESRD). It was found that a significantly greater proportion of subjects with past history of PSGN than without the history exhibited seroreactions to streptococcal antigens called streptococcal inhibitor of complement (SIC) and to distantly related SIC (DRS). These antigens are expressed by major PSGN-associated GAS types. We therefore predicted that in populations such as India, which is endemic for streptococcal diseases and which has high prevalence of CKD and ESRD, greater proportions of CKD and ESRD patients exhibit seroreaction to SIC and DRS than healthy controls. Methods To test this we conducted a SIC and DRS seroprevalence study in subjects from Mumbai area. We recruited 100 CKD, 70 ESRD and 70 healthy individuals. Results Nineteen and 35.7% of CKD and ESRD subjects respectively were SIC antibody-positive, whereas only 7% of healthy cohort was seropositive to SIC. Furthermore, significantly greater proportion of the ESRD patients than the CKD patients is seropositive to SIC (p=0.02; odds ratio 2.37). No association was found between the renal diseases and DRS-antibody-positivity. Conclusions Past infection with SIC-positive GAS is a risk factor for CKD and ESRD in Mumbai population. Furthermore, SIC seropositivity is predictive of poor prognosis of CKD patients. PMID:23642030

Theoretical investigation of the breakdown electric field of SiC polymorphs

NASA Astrophysics Data System (ADS)

Yamaguchi, Kikou; Kobayashi, Daisuke; Yamamoto, Tomoyuki; Hirose, Kazuyuki

2018-03-01

The breakdown electric field of several SiC polymorphs has been investigated theoretically using a concept of "recovery rate," which is obtained by first principles calculations. A good relationship between the experimental breakdown electric fields and the calculated recovery rate of 4H-, 6H-, and 3C-SiC was obtained. In order to examine the stability of SiC polymorphs, the total electronic energies of various types of SiC crystal structures were calculated. Here, two candidates of polymorphs-GeS-type- and 2H-SiC-with energies comparable to those of experimentally well-established structures, have been obtained. The breakdown electric fields of these two polymorphs were estimated using a relationship obtained from the results of 4H-, 6H-, and 3C-SiC. This indicates that one of these polymorphs, GeS-type-SiC, has higher breakdown electric field than any other SiC polymorphs. In addition to the investigation with the recovery rate, relationship between experimental breakdown electric field and calculated band gap with recently developed accurate electron-correlation potential has been also discussed.

Microstructural and strength stability of a developmental CVD SiC fiber

NASA Technical Reports Server (NTRS)

Bhatt, Ramakrishna T.; Garg, Anita; Hull, David R.

1995-01-01

The effects of thermal exposure on the room temperature tensile strength and microstructure of a developmental 50 micron CVD SiC fiber have been studied. The fibers were heat treated between 600 and 2000 C in 0.1 MPa argon and air environments for up to 100 hr. In the as-fabricated condition, the fibers showed approximately 6 GPa tensile strength. After argon treatment, the fibers showed strength degradation after 1 hr exposure beyond 1000 C, but those exposed between 1600 and 2000 C retained approximately 2 GPa strength. TEM results showed microstructural changes both in the surface coating and SiC sheath. Flaws created by the rearrangement of carbon in the surface coating and growth of equiaxed SiC grain zone in the SiC sheath are the suggested mechanisms of strength degradation. After air treatment, fibers showed strength degradation after only 2 min exposure at 600 C. Strength retention after 2 min at 1500 C was approximately 2 GPa. Oxidation of the surface coating is the primary reason for strength degradation.

Low CTE glass, SiC & Beryllium for lightweight mirror substrates

NASA Astrophysics Data System (ADS)

Geyl, Roland; Cayrel, Marc

2005-10-01

This paper is intended to analyze the relative merits of low CTE glass, SiC and Beryllium as candidates for lightweight mirror substrates in connection with real practical experience and example or three major projects using these three materials and running presently at SAGEM-REOSC. Beryllium and SiC have nice thermal and mechanical properties but machined glass ceramic can still well compete technically or economically in some cases.

A highly sensitive hydrogen sensor with gas selectivity using a PMMA membrane-coated Pd nanoparticle/single-layer graphene hybrid.

PubMed

Hong, Juree; Lee, Sanggeun; Seo, Jungmok; Pyo, Soonjae; Kim, Jongbaeg; Lee, Taeyoon

2015-02-18

A polymer membrane-coated palladium (Pd) nanoparticle (NP)/single-layer graphene (SLG) hybrid sensor was fabricated for highly sensitive hydrogen gas (H2) sensing with gas selectivity. Pd NPs were deposited on SLG via the galvanic displacement reaction between graphene-buffered copper (Cu) and Pd ion. During the galvanic displacement reaction, graphene was used as a buffer layer, which transports electrons from Cu for Pd to nucleate on the SLG surface. The deposited Pd NPs on the SLG surface were well-distributed with high uniformity and low defects. The Pd NP/SLG hybrid was then coated with polymer membrane layer for the selective filtration of H2. Because of the selective H2 filtration effect of the polymer membrane layer, the sensor had no responses to methane, carbon monoxide, or nitrogen dioxide gas. On the contrary, the PMMA/Pd NP/SLG hybrid sensor exhibited a good response to exposure to 2% H2: on average, 66.37% response within 1.81 min and recovery within 5.52 min. In addition, reliable and repeatable sensing behaviors were obtained when the sensor was exposed to different H2 concentrations ranging from 0.025 to 2%.

Trace hydrogen sulfide gas sensor based on tungsten sulfide membrane-coated thin-core fiber modal interferometer

NASA Astrophysics Data System (ADS)

Deng, Dashen; Feng, Wenlin; Wei, Jianwei; Qin, Xiang; Chen, Rong

2017-11-01

A novel fiber-optic hydrogen sulfide sensor based on a thin-core Mach-Zehnder fiber modal interferometer (TMZFI) is demonstrated and fabricated. This in-line interferometer is composed of a short section of thin-core fiber sandwiched between two standard single mode fibers, and the fast response to hydrogen sulfide is achieved via the construction of tungsten sulfide film on the outside surface of the TMZFI using the dip-coating and calcination technique. The fabricated sensing nanofilm is characterized by X-ray powder diffraction (XRD), scanning electron microscopy (SEM), high resolution transmission electron microscopy (HRTEM), X-ray photoelectron spectroscopy (XPS) spectrometer, Fourier transform infrared (FTIR) and spectroscopic analysis technology, etc. Experimental results showed that the WS2 sensing film has a hexagonal structure with a compact and porous morphology. The XPS and FTIR indicate that the existence of two elements (W and S) is demonstrated. With the increasing concentration of hydrogen sulfide, the interference spectra appear blue shift. In addition, a high sensitivity of 18.37 pm/ppm and a good linear relationship are obtained within a measurement range from 0 to 80 ppm. In addition, there is an excellent selectivity for H2S, which has also been proved by the surface adsorption energy results of tungsten sulfide with four gases (H2S, N2, O2 and CO2) by using the density functional theory calculations. This interferometer has the advantages of simple structure, high sensitivity and easy manufacture, and could be used in the safety monitoring field of hydrogen sulfide gas.

SiC challenging parts for GAIA

NASA Astrophysics Data System (ADS)

Bougoin, M.

2017-11-01

GAIA is one of the cornerstone ESA missions which aims at compiling a catalogue of about one billion stars of our galaxy. Reaching the highly demanding scientific requirements lead ASTRIUM engineers to design a mechanically and thermally ultra-stable instrument. This is the reason why, thanks to its physical properties, the SiC turned out to be indispensable. The GAIA payload includes the following hardware which is mainly made of SiC i) the 3 meters quasi octagonal torus structure, ii) two identical 1.5 meters TMA type telescopes, iii) the central sub-assembly which holds several folding mirrors and the "Radial Velocity Spectrometer", iv) the focal plane and v) the "Basic Angle Monitoring". Due to the required large size (1 - 3 meters class), accuracy and shape complexity, developing and manufacturing these SiC parts was a real challenge for BOOSTEC. It is reviewed in this paper.

Creep deformation of grain boundary in a highly crystalline SiC fibre.

PubMed

Shibayama, Tamaki; Yoshida, Yutaka; Yano, Yasuhide; Takahashi, Heishichiro

2003-01-01

Silicon carbide (SiC) matrix composites reinforced by SiC fibres (SiC/SiC composites) are currently being considered as alternative materials in high Ni alloys for high-temperature applications, such as aerospace components, gas-turbine energy-conversion systems and nuclear fusion reactors, because of their high specific strength and fracture toughness at elevated temperatures compared with monolithic SiC ceramics. It is important to evaluate the creep properties of SiC fibres under tensile loading in order to determine their usefulness as structural components. However, it would be hard to evaluate creep properties by monoaxial tensile properties when we have little knowledge on the microstructure of crept specimens, especially at the grain boundary. Recently, a simple fibre bend stress relaxation (BSR) test was introduced by Morscher and DiCarlo to address this problem. Interpretation of the fracture mechanism at the grain boundary is also essential to allow improvement of the mechanical properties. In this paper, effects of stress applied by BSR test on microstructural evolution in advanced SiC fibres, such as Tyranno-SA including small amounts of Al, are described and discussed along with the results of microstructure analysis on an atomic scale by using advanced microscopy.

Electron Microprobe Measurements of Nitrogen in SiC

NASA Astrophysics Data System (ADS)

Ross, K.

2007-12-01

Methods have been developed for the measurement of low abundances of nitrogen in SiC films. These techniques were developed for measurements of synthetic thin-film samples prepared by materials scientists but the technique can also be applied to natural SiC grains in meteorites. One problem associated with measuring nitrogen at low abundance levels is the low count rates due to strong absorption of the nitrogen signal in the matrix material. In thin film samples, (SiC deposited on elemental Si) it is preferable to limit x-ray production and emission to the overlayer. This eliminates the need for data reduction using thin-film methods. Thin film data reduction is inevitably less accurate than bulk material data reduction methods. In order to limit x-ray emission to the film layer, data has been collected at 5 kV and 3.5 kV accelerating voltage (depending on film thickness estimates provided by scientists who prepared these samples). These low beam energies also promote production of x-rays in the shallow region of the samples, and this minimizes strong absorption, leading to more abundant nitrogen x-ray detection, which improves counting statistics and overall precision. The CASINO monte carlo modeling program was used to model electron penetration and x-ray production as a function of beam energy and depth in the sample in order to ensure that the excited volume is limited to the film. The beam was set to 200 nA beam current. This high beam current also improves counting statistics by providing more abundant count rates. One drawback of these beam conditions is the limited spatial resolution provided. In our Cameca probe, a 5 kV, 200 nA beam is approximately 10 microns in diameter. SiC samples and standard were not carbon coated (they are conducting). AlN was used as the nitrogen standard. These films contained 0.3 to 0.7 wt. per cent nitrogen, with analytical uncertainties in the range of 10-20 per cent relative errors. The Si:C ratios were very near 1

800 C Silicon Carbide (SiC) Pressure Sensors for Engine Ground Testing

NASA Technical Reports Server (NTRS)

Okojie, Robert S.

2016-01-01

MEMS-based 4H-SiC piezoresistive pressure sensors have been demonstrated at 800 C, leading to the discovery of strain sensitivity recovery with increasing temperatures above 400 C, eventually achieving up to, or near, 100 recovery of the room temperature values at 800 C. This result will allow the insertion of highly sensitive pressure sensors closer to jet, rocket, and hypersonic engine combustion chambers to improve the quantification accuracy of combustor dynamics, performance, and increase safety margin. Also, by operating at higher temperature and locating closer to the combustion chamber, reduction of the length (weight) of pressure tubes that are currently used will be achieved. This will result in reduced costlb to access space.

Understanding the Mechanism of SiC Plasma-Enhanced Chemical Vapor Deposition (PECVD) and Developing Routes toward SiC Atomic Layer Deposition (ALD) with Density Functional Theory.

PubMed

Filatova, Ekaterina A; Hausmann, Dennis; Elliott, Simon D

2018-05-02

Understanding the mechanism of SiC chemical vapor deposition (CVD) is an important step in investigating the routes toward future atomic layer deposition (ALD) of SiC. The energetics of various silicon and carbon precursors reacting with bare and H-terminated 3C-SiC (011) are analyzed using ab initio density functional theory (DFT). Bare SiC is found to be reactive to silicon and carbon precursors, while H-terminated SiC is found to be not reactive with these precursors at 0 K. Furthermore, the reaction pathways of silane plasma fragments SiH 3 and SiH 2 are calculated along with the energetics for the methane plasma fragments CH 3 and CH 2 . SiH 3 and SiH 2 fragments follow different mechanisms toward Si growth, of which the SiH 3 mechanism is found to be more thermodynamically favorable. Moreover, both of the fragments were found to show selectivity toward the Si-H bond and not C-H bond of the surface. On the basis of this, a selective Si deposition process is suggested for silicon versus carbon-doped silicon oxide surfaces.

Injected ion energy dependence of SiC film deposited by low-energy SiC3H9+ ion beam produced from hexamethyldisilane

NASA Astrophysics Data System (ADS)

Yoshimura, Satoru; Sugimoto, Satoshi; Takeuchi, Takae; Murai, Kensuke; Kiuchi, Masato

2018-04-01

We mass-selected SiC3H9+ ions from various fragments produced through the decomposition of hexamethyldisilane, and finally produced low-energy SiC3H9+ ion beams. The ion beams were injected into Si(1 0 0) substrates and the dependence of deposited films on injected ion energy was then investigated. Injected ion energies were 20, 100, or 200 eV. Films obtained were investigated with X-ray diffraction, X-ray photoelectron spectroscopy, and Raman spectroscopy. X-ray diffraction and X-ray photoelectron spectroscopy of the substrates obtained following the injection of 20 eV ions demonstrated the occurrence of silicon carbide film (3C-SiC) deposition. On the other hand, Raman spectroscopy showed that the films deposited by the injection of 100 or 200 eV ions included 3C-SiC plus diamond-like carbon. Ion beam deposition using hexamethyldisilane-derived 20 eV SiC3H9+ ions is an efficient technique for 3C-SiC film formation on Si substrates.

Stable oxygen and hydrogen isotope analyses of bowhead whale baleen as biochemical recorders of migration and arctic environmental change

NASA Astrophysics Data System (ADS)

deHart, Pieter A. P.; Picco, Candace M.

2015-06-01

An analysis of the stable isotopes of oxygen (δ18O) and hydrogen (δD) was used to examine the linkage between sea ice concentration and the migration of western arctic bowhead whales (Balaena mysticetus; WABW). We compared δ18O and δD variability along the length of WABW baleen with isotopic values of zooplankton prey from different WABW habitat, with published δ13C and δ15N data, and with historical sea ice records. Zooplankton signatures varied widely (δ18O = -13‰-56‰; δD = -220‰ to -75‰), with regional separation between winter (Bering Sea) and summer (eastern Beaufort Sea) habitats of WABW observable in δD. The δ18O and δD of WABW varied significantly along the length of baleen (δ18O = 8-18‰; δD = -180 to -80‰), confirming seasonal migration and reflecting distinct regional dietary variation in isotopes. WABW migration appears to have varied concomitant with temporal sea ice concentration (SIC) changes; in years with high SIC, the difference in δD of WABW baleen between seasonal habitats was significantly greater than low SIC periods. This work shows that SIC is not only a determinant of habitat accessibility for WABW, but baleen may also be a record of historical SIC and Arctic climate.

Gas Sensor Evaluations in Polymer Combustion Product Atmospheres

NASA Technical Reports Server (NTRS)

Delgado, Rafael H.; Davis, Dennis D.; Beeson, Harold D.

1999-01-01

Toxic gases produced by the combustion or thermo-oxidative degradation of materials such as wire insulation, foam, plastics, or electronic circuit boards in space shuttle or space station crew cabins may pose a significant hazard to the flight crew. Toxic gas sensors are routinely evaluated in pure gas standard mixtures, but the possible interferences from polymer combustion products are not routinely evaluated. The NASA White Sands Test Facility (WSTF) has developed a test system that provides atmospheres containing predetermined quantities of target gases combined with the coincidental combustion products of common spacecraft materials. The target gases are quantitated in real time by infrared (IR) spectroscopy and verified by grab samples. The sensor responses are recorded in real time and are compared to the IR and validation analyses. Target gases such as carbon monoxide, hydrogen cyanide, hydrogen chloride, and hydrogen fluoride can be generated by the combustion of poly(vinyl chloride), polyimide-fluoropolymer wire insulation, polyurethane foam, or electronic circuit board materials. The kinetics and product identifications for the combustion of the various materials were determined by thermogravimetric-IR spectroscopic studies. These data were then scaled to provide the required levels of target gases in the sensor evaluation system. Multisensor toxic gas monitors from two manufacturers were evaluated using this system. In general, the sensor responses satisfactorily tracked the real-time concentrations of toxic gases in a dynamic mixture. Interferences from a number of organic combustion products including acetaldehyde and bisphenol-A were minimal. Hydrogen bromide in the products of circuit board combustion registered as hydrogen chloride. The use of actual polymer combustion atmospheres for the evaluation of sensors can provide additional confidence in the reliability of the sensor response.

Quantifying Appropriate De-rating of SiC MOSFETs Subject to Cosmic Rays

DOE Office of Scientific and Technical Information (OSTI.GOV)

Chatty, Kiran

Terrestrial Cosmic Radiation (TCR) is known to cause failures in high-voltage Si devices resulting in de-rating of the maximum reverse blocking voltage. In this work, a test setup was developed and unaccelerated TCR testing was performed on 1200V Si IGBTs, 1200V SiC MOSFETs and 1200V SiC Schottky diodes. Failures due to TCR were generated on 1200V Si IGBTs at reverse voltages from 900V to 1175V. Si IGBTs investigated in this work will need to be operated at a maximum voltage of 800V to achieve a Failure in Time (FIT) rate of 100. No failures were observed on 1200V SiC MOSFETsmore » and Schottky diodes after testing at 1200V for over 1.5 years demonstrating low FIT rates compared to Si IGBTs. 1200V SiC Schottky diodes were fabricated in this program and the packaged devices were used in the TCR testing.« less

A Novel Polymeric Organosilazane Precursor to Si3N4/SiC Ceramics.

DTIC Science & Technology

1985-02-06

prepared by pyrolysis of the appropriately-shaped polymeric precursor. These polysilazanes also may prove to be useful as dispersants for SiC and Si3N4...I[AD-Ri58 748 A NOVEL POLYMERIC ORGANOSILAZANE PRECURSOR TO S13N4/ SIC i/I CERRMICS(U) MASSACHUSETTS INST OF TECH CAMBRIDGE DEPT OF CHEMISTRY D...Security C ificatlion" 0322 A Novel Polymeric Organosilazane Precursor to Si3N/ SiC C_ramics._I 12. PERSONAL AUTHOR(S) Dietmar Seyferth and Gary H. Wiseman 13

Streptococcal inhibitor of complement (SIC) inhibits the membrane attack complex by preventing uptake of C567 onto cell membranes

PubMed Central

Fernie-King, Barbara A; Seilly, David J; Willers, Christine; Würzner, Reinhard; Davies, Alexandra; Lachmann, Peter J

2001-01-01

Streptococcal inhibitor of complement (SIC) was first described in 1996 as a putative inhibitor of the membrane attack complex of complement (MAC). SIC is a 31 000 MW protein secreted in large quantities by the virulent Streptococcus pyogenes strains M1 and M57, and is encoded by a gene which is extremely variable. In order to study further the interactions of SIC with the MAC, we have made a recombinant form of SIC (rSIC) in Escherichia coli and purified native M1 SIC which was used to raise a polyclonal antibody. SIC prevented reactive lysis of guinea pig erythrocytes by the MAC at a stage prior to C5b67 complexes binding to cell membranes, presumably by blocking the transiently expressed membrane insertion site on C7. The ability of SIC and clusterin (another putative fluid phase complement inhibitor) to inhibit complement lysis was compared, and found to be equally efficient. In parallel, by enzyme-linked immunosorbent assay both SIC and rSIC bound strongly to C5b67 and C5b678 complexes and to a lesser extent C5b-9, but only weakly to individual complement components. The implications of these data for virulence of SIC-positive streptococci are discussed, in light of the fact that Gram-positive organisms are already protected against complement lysis by the presence of their peptidoglycan cell walls. We speculate that MAC inhibition may not be the sole function of SIC. PMID:11454069

Nanoporous SiC: a candidate semi-permeable material for biomedical applications.

PubMed

Rosenbloom, A J; Sipe, D M; Shishkin, Y; Ke, Y; Devaty, R P; Choyke, W J

2004-12-01

We have fabricated free-standing SiC nanoporous membranes in both p -type and n -type material. We showed that these membranes will permit the diffusion of proteins up to 29000 Daltons, while excluding larger proteins. By using radioactively labeled albumin, we also show that porous SiC has very low protein adsorption, comparable to the best commercially available polymer nanoporous membrane.

Structural, thermal, dielectric spectroscopic and AC impedance properties of SiC nanoparticles doped PVK/PVC blend

NASA Astrophysics Data System (ADS)

Alghunaim, Naziha Suliman

2018-06-01

Nanocomposite films based on poly (N-vinylcarbazole)/polyvinylchloride (PVK/PVC) blend doped with different concentrations of Silicon Carbide (SiC) nanoparticles have been prepared. The X-ray diffraction, Ultra violet-visible spectroscopy, thermogravimetric analysis and electrical spectroscopic has been used to characterize these nanocomposites. The X-ray analysis confirms the semi-crystalline nature of the films. The intensity of the main X-ray peak is decreased due to the interaction between the PVK/PVC and SiC. The main SiC peaks are absent due to complete dissolution of SiC in polymeric matrices. The UV-Vis spectra indicated that the band gap optical energy is affected by adding SiC nanoparticles because the charges transfer complexes between PVK/PVC with amount of SiC. The thermal stability is improved and the estimated values of ε‧ and ε″ are increased with increasing for SiC content due to the free charge carriers which in turn increase the ionic conductivity of the doped samples. The plots of tan δ with frequency are studied. A single peak from the plot between tan δ and Log (f) is appeared and shifted towards the higher frequency confirmed the presence of relaxing dipoles moment.

Construction Progress of the S-IC Test Stand-Pumps

NASA Technical Reports Server (NTRS)

1962-01-01

At its founding, the Marshall Space Flight Center (MSFC) inherited the Army's Jupiter and Redstone test stands, but much larger facilities were needed for the giant stages of the Saturn V. From 1960 to 1964, the existing stands were remodeled and a sizable new test area was developed. The new comprehensive test complex for propulsion and structural dynamics was unique within the nation and the free world, and they remain so today because they were constructed with foresight to meet the future as well as on going needs. Construction of the S-IC Static test stand complex began in 1961 in the west test area of MSFC, and was completed in 1964. The S-IC static test stand was designed to develop and test the 138-ft long and 33-ft diameter Saturn V S-IC first stage, or booster stage, weighing in at 280,000 pounds. Required to hold down the brute force of a 7,500,000-pound thrust produced by 5 F-1 engines, the S-IC static test stand was designed and constructed with the strength of hundreds of tons of steel and 12,000,000 pounds of cement, planted down to bedrock 40 feet below ground level. The foundation walls, constructed with concrete and steel, are 4 feet thick. The base structure consists of four towers with 40-foot-thick walls extending upward 144 feet above ground level. The structure was topped by a crane with a 135-foot boom. With the boom in the upright position, the stand was given an overall height of 405 feet, placing it among the highest structures in Alabama at the time. This photo, taken April 4, 1961, shows the S-IC test stand dry once again when workers resumed construction after a 6 month delay due to booster size reconfiguration back in September of 1961. The disturbance of a natural spring during the excavation of the site required water to be pumped from the site continuously. The site was completely flooded after the pumps were shut down during the construction delay.

Dip-coating of nano-sized CeO2 on SiC membrane and its effect on thermal diffusivity.

PubMed

Park, Jihye; Jung, Miewon

2014-05-01

CeO2-SiC mixed composite membrane was fabricated with porous SiC ceramic and cerium oxide powder synthesized by sol-gel process. This CeO2-SiC membrane and SiC membrane which is made by the purified SiC ceramic were pressed and sintered in Ar atmosphere. And then, the SiC membrane was dip-coated by cerium oxide precursor sol solution and heat-treated in air. The surface morphology, particle size, porosity and structure analysis of the mixing and dip-coating SiC membrane were monitored by FE-SEM and X-ray diffraction analysis. Surface area, pore volume and pore diameter were determined by BET instrument. Thermal diffusivity was measured by laser flash method with increasing temperature. The relation between porosity and thermal diffusivity from different preparation process has been discussed on this study.

CTE homogeneity, isotropy and reproducibility in large parts made of sintered SiC

NASA Astrophysics Data System (ADS)

Bougoin, Michel; Castel, Didier; Levallois, Franck

2017-11-01

For Herschel SiC primary mirror purpose, a new approach of comparative CTE measurement has been developed; it is based on the well known bimetallic effect ("biceramic" in this case) and also optical measurements. This method offers a good CTE comparison capability in the range of 170-420K (extensible to 5-420K) depending of the thermal test facilities performance, with a resolution of only 0.001 μm/m.K. The Herschel primary mirror is made of 12 SiC segments which are brazed together. The CTE of each segment has been compared with the one of a witness sample and no visible change, higher than the measurement accuracy, has been observed. Furthermore, a lot of samples have been cut out from a spare segment, from different places and also from all X, Y and Z direction of the reference frame. No deviation was seen in all of these tests, thus demonstrating the very good homogeneity, reproducibility and isotropy of the Boostec® SiC material. Some recent literature about SiC material measurements at cryogenic temperature shows a better behaviour of Boostec® SiC material in comparison with other kind of SiC which are also candidate for space optics, in particular for isotropy purpose. After a review of the available literature, this paper describes the comparative CTE measurement method and details the results obtained during the measurement campaigns related to Herschel project.

In-situ synchrotron x-ray study of MgB2 formation when doped by SiC

NASA Astrophysics Data System (ADS)

Abrahamsen, A. B.; Grivel, J.-C.; Andersen, N. H.; Herrmann, M.; Häßler, W.; Birajdar, B.; Eibl, O.; Saksl, K.

2008-02-01

We have studied the evolution of the reaction xMg + 2B + ySiC → zMg1-p(B1-qCq)2 + yMg2Si in samples of 1, 2, 5 and 10 wt% SiC doping. We found a coincident formation of MgB2 and Mg2Si, whereas the crystalline part of the SiC nano particles is not reacting at all. Evidence for incorporation of carbon into the MgB2 phase was established from the decrease of the a-axis lattice parameter upon increasing SiC doping. An estimate of the MgB2 lower limit grain size was found to decrease from L100 = 795 Å and L002 = 337 Å at 1 wt% SiC to L100 = 227 Å and L002= 60 Å at 10 wt% SiC. Thus superconductivity might be suppressed at 10 wt% SiC doping due to the grain size approaching the coherence length.

Final Technical Report - 300°C Capable Electronics Platform and Temperature Sensor System For Enhanced Geothermal Systems

DOE Office of Scientific and Technical Information (OSTI.GOV)

Chen, Cheng-Po; Shaddock, David; Sandvik, Peter

2012-11-30

A silicon carbide (SiC) based electronic temperature sensor prototype has been demonstrated to operate at 300°C. We showed continuous operation of 1,000 hours with SiC operational amplifier and surface mounted discreet resistors and capacitors on a ceramic circuit board. This feasibility demonstration is a major milestone in the development of high temperature electronics in general and high temperature geothermal exploration and well management tools in particular. SiC technology offers technical advantages that are not found in competing technologies such as silicon-on-insulator (SOI) at high temperatures of 200°C to 300°C and beyond. The SiC integrated circuits and packaging methods can bemore » used in new product introduction by GE Oil and Gas for high temperature down-hole tools. The existing SiC fabrication facility at GE is sufficient to support the quantities currently demanded by the marketplace, and there are other entities in the United States and other countries capable of ramping up SiC technology manufacturing. The ceramic circuit boards are different from traditional organic-based electronics circuit boards, but the fabrication process is compatible with existing ceramic substrate manufacturing. This project has brought high temperature electronics forward, and brings us closer to commercializing tools that will enable and reduce the cost of enhanced geothermal technology to benefit the public in terms of providing clean renewable energy at lower costs.« less

Oxidation of ZrB2-SiC

NASA Technical Reports Server (NTRS)

Opila, Elizabeth J.; Halbig, Michael C.

2001-01-01

In this paper the oxidation behavior of ZrB2-20 vol% SiC is examined. Samples were exposed in stagnant air in a zirconia furnace (Deltech, Inc.) at temperatures of 1327, 1627, and 1927 C for ten ten-minute cycles. Samples were removed from the furnace after one, five, and ten cycles. Oxidized material was characterized by mass change when possible, x-ray diffraction (XRD), scanning electron microscopy (SEM), and energy dispersive spectroscopy (EDS). Oxidation kinetics, oxide scale development, and matrix recession were monitored as a function of time and temperature. Oxidation and recession rates of ZrB2 - 20 vol% SiC were adequately modeled by parabolic kinetics. Oxidation rates of this material are rapid, allowing only very short-term application in air or other high oxygen partial pressure environments.

29 CFR 510.21 - SIC codes.

Code of Federal Regulations, 2012 CFR

2012-07-01

... annual Census of Manufacturing Industries as a source of average hourly wage data by industry. Industries in that census are organized by Standard Industrial Classification (SIC), the statistical... stated that data “should be at a level of specificity comparable to the four digit Standard Industry Code...

29 CFR 510.21 - SIC codes.

Code of Federal Regulations, 2014 CFR

2014-07-01

... annual Census of Manufacturing Industries as a source of average hourly wage data by industry. Industries in that census are organized by Standard Industrial Classification (SIC), the statistical... stated that data “should be at a level of specificity comparable to the four digit Standard Industry Code...

29 CFR 510.21 - SIC codes.

Code of Federal Regulations, 2013 CFR

2013-07-01

... annual Census of Manufacturing Industries as a source of average hourly wage data by industry. Industries in that census are organized by Standard Industrial Classification (SIC), the statistical... stated that data “should be at a level of specificity comparable to the four digit Standard Industry Code...

29 CFR 510.21 - SIC codes.

Code of Federal Regulations, 2011 CFR

2011-07-01

... annual Census of Manufacturing Industries as a source of average hourly wage data by industry. Industries in that census are organized by Standard Industrial Classification (SIC), the statistical... stated that data “should be at a level of specificity comparable to the four digit Standard Industry Code...

Nucleation of uniform mono- and bilayer epitaxial graphene on SiC(0001)

NASA Astrophysics Data System (ADS)

Wu, Xiaosong; Zhang, Rui; Dong, Yunliang; Guo, Shuai; Kong, Wenjie; Liao, Zhimin; Yu, Dapeng

2012-02-01

Early stage of epitaxial graphene growth on SiC(0001) has been investigated. Using the confinement controlled sublimation (CCS) method, we has achieved well controlled growth and been able to see the formation of mono- and bilayer graphene islands. The growth features reveal the intriguing growth mechanism. In particular, a new ``stepdown'' growth mode has been identified. Graphene can propagate tens of micrometers across many SiC steps, while, most importantly, step bunching is avoided and the initial regular stepped SiC surface morphology is preserved. The stepdown growth demonstrates a route towards uniform epitaxial graphene in wafer size without sacrificing the initial substrate surface morphology.

The intensive terahertz electroluminescence induced by Bloch oscillations in SiC natural superlattices

PubMed Central

2012-01-01

We report on efficient terahertz (THz) emission from high-electric-field-biased SiC structures with a natural superlattice at liquid helium temperatures. The emission spectrum demonstrates a single line, the maximum of which shifts linearly with increases in bias field. We attribute this emission to steady-state Bloch oscillations of electrons in the SiC natural superlattice. The properties of the THz emission agree fairly with the parameters of the Bloch oscillator regime, which have been proven by high-field electron transport studies of SiC structures with natural superlattices. PMID:23043773

Growth and characterization of high-purity SiC single crystals

NASA Astrophysics Data System (ADS)

Augustine, G.; Balakrishna, V.; Brandt, C. D.

2000-04-01

High-purity SiC single crystals with diameter up to 50 mm have been grown by the physical vapor transport method. Finite element analysis was used for thermal modeling of the crystal growth cavity in order to reduce stress in the grown crystal. Crystals are grown in high-purity growth ambient using purified graphite furniture and high-purity SiC sublimation sources. Undoped crystals up to 50 mm in diameter with micropipe density less than 100 cm -2 have been grown using this method. These undoped crystals exhibit resistivities in the 10 3 Ω cm range and are p-type due to the presence of residual acceptor impurities, mainly boron. Semi-insulating SiC material is obtained by doping the crystal with vanadium. Vanadium has a deep donor level located near the middle of the band gap, which compensates the residual acceptor resulting in semi-insulating behavior.

Chemochromic Hydrogen Leak Detectors

NASA Technical Reports Server (NTRS)

Roberson, Luke; Captain, Janine; Williams, Martha; Smith, Trent; Tate, LaNetra; Raissi, Ali; Mohajeri, Nahid; Muradov, Nazim; Bokerman, Gary

2009-01-01

At NASA, hydrogen safety is a key concern for space shuttle processing. Leaks of any level must be quickly recognized and addressed due to hydrogen s lower explosion limit. Chemo - chromic devices have been developed to detect hydrogen gas in several embodiments. Because hydrogen is odorless and colorless and poses an explosion hazard, there is an emerging need for sensors to quickly and accurately detect low levels of leaking hydrogen in fuel cells and other advanced energy- generating systems in which hydrogen is used as fuel. The device incorporates a chemo - chromic pigment into a base polymer. The article can reversibly or irreversibly change color upon exposure to hydrogen. The irreversible pigment changes color from a light beige to a dark gray. The sensitivity of the pigment can be tailored to its application by altering its exposure to gas through the incorporation of one or more additives or polymer matrix. Furthermore, through the incorporation of insulating additives, the chemochromic sensor can operate at cryogenic temperatures as low as 78 K. A chemochromic detector of this type can be manufactured into any feasible polymer part including injection molded plastic parts, fiber-spun textiles, or extruded tapes. The detectors are simple, inexpensive, portable, and do not require an external power source. The chemochromic detectors were installed and removed easily at the KSC launch pad without need for special expertise. These detectors may require an external monitor such as the human eye, camera, or electronic detector; however, they could be left in place, unmonitored, and examined later for color change to determine whether there had been exposure to hydrogen. In one type of envisioned application, chemochromic detectors would be fabricated as outer layers (e.g., casings or coatings) on high-pressure hydrogen storage tanks and other components of hydrogen-handling systems to provide visible indications of hydrogen leaks caused by fatigue failures or

Methanol, ethanol and hydrogen sensing using metal oxide and metal (TiO(2)-Pt) composite nanoclusters on GaN nanowires: a new route towards tailoring the selectivity of nanowire/nanocluster chemical sensors.

PubMed

Aluri, Geetha S; Motayed, Abhishek; Davydov, Albert V; Oleshko, Vladimir P; Bertness, Kris A; Sanford, Norman A; Mulpuri, Rao V

2012-05-04

We demonstrate a new method for tailoring the selectivity of chemical sensors using semiconductor nanowires (NWs) decorated with metal and metal oxide multicomponent nanoclusters (NCs). Here we present the change of selectivity of titanium dioxide (TiO(2)) nanocluster-coated gallium nitride (GaN) nanowire sensor devices on the addition of platinum (Pt) nanoclusters. The hybrid sensor devices were developed by fabricating two-terminal devices using individual GaN NWs followed by the deposition of TiO(2) and/or Pt nanoclusters (NCs) using the sputtering technique. This paper present the sensing characteristics of GaN/(TiO(2)-Pt) nanowire-nanocluster (NWNC) hybrids and GaN/(Pt) NWNC hybrids, and compare their selectivity with that of the previously reported GaN/TiO(2) sensors. The GaN/TiO(2) NWNC hybrids showed remarkable selectivity to benzene and related aromatic compounds, with no measurable response for other analytes. Addition of Pt NCs to GaN/TiO(2) sensors dramatically altered their sensing behavior, making them sensitive only to methanol, ethanol and hydrogen, but not to any other chemicals we tested. The GaN/(TiO(2)-Pt) hybrids were able to detect ethanol and methanol concentrations as low as 100 nmol mol(-1) (ppb) in air in approximately 100 s, and hydrogen concentrations from 1 µmol mol(-1) (ppm) to 1% in nitrogen in less than 60 s. However, GaN/Pt NWNC hybrids showed limited sensitivity only towards hydrogen and not towards any alcohols. All these hybrid sensors worked at room temperature and are photomodulated, i.e. they responded to analytes only in the presence of ultraviolet (UV) light. We propose a qualitative explanation based on the heat of adsorption, ionization energy and solvent polarity to explain the observed selectivity of the different hybrids. These results are significant from the standpoint of applications requiring room-temperature hydrogen sensing and sensitive alcohol monitoring. These results demonstrate the tremendous potential for

Normal Isocurvature Surfaces and Special Isocurvature Circles (SIC)

NASA Astrophysics Data System (ADS)

Manoussakis, Gerassimos; Delikaraoglou, Demitris

2010-05-01

An isocurvature surface of a gravity field is a surface on which the value of the plumblines' curvature is constant. Here we are going to study the isocurvature surfaces of the Earth's normal gravity field. The normal gravity field is a symmetric gravity field therefore the isocurvature surfaces are surfaces of revolution. But even in this case the necessary relations for their study are not simple at all. Therefore to study an isocurvature surface we make special assumptions to form a vector equation which will hold only for a small coordinate patch of the isocurvature surface. Yet from the definition of the isocurvature surface and the properties of the normal gravity field is possible to express very interesting global geometrical properties of these surfaces without mixing surface differential calculus. The gradient of the plumblines' curvature function is vertical to an isocurvature surface. If P is a point of an isocurvature surface and "Φ" is the angle of the gradient of the plumblines' curvature with the equatorial plane then this direction points to the direction along which the curvature of the plumbline decreases / increases the most, and therefore is related to the strength of the normal gravity field. We will show that this direction is constant along a line of curvature of the isocurvature surface and this line is an isocurvature circle. In addition we will show that at each isocurvature surface there is at least one isocurvature circle along which the direction of the maximum variation of the plumblines' curvature function is parallel to the equatorial plane of the ellipsoid of revolution. This circle is defined as a Special Isocurvature Circle (SIC). Finally we shall prove that all these SIC lye on a special surface of revolution, the so - called SIC surface. That is to say, a SIC is not an isolated curve in the three dimensional space.

Hydrogen desorption from hydrogen fluoride and remote hydrogen plasma cleaned silicon carbide (0001) surfaces

DOE Office of Scientific and Technical Information (OSTI.GOV)

King, Sean W., E-mail: sean.king@intel.com; Tanaka, Satoru; Davis, Robert F.

2015-09-15

Due to the extreme chemical inertness of silicon carbide (SiC), in-situ thermal desorption is commonly utilized as a means to remove surface contamination prior to initiating critical semiconductor processing steps such as epitaxy, gate dielectric formation, and contact metallization. In-situ thermal desorption and silicon sublimation has also recently become a popular method for epitaxial growth of mono and few layer graphene. Accordingly, numerous thermal desorption experiments of various processed silicon carbide surfaces have been performed, but have ignored the presence of hydrogen, which is ubiquitous throughout semiconductor processing. In this regard, the authors have performed a combined temperature programmed desorptionmore » (TPD) and x-ray photoelectron spectroscopy (XPS) investigation of the desorption of molecular hydrogen (H{sub 2}) and various other oxygen, carbon, and fluorine related species from ex-situ aqueous hydrogen fluoride (HF) and in-situ remote hydrogen plasma cleaned 6H-SiC (0001) surfaces. Using XPS, the authors observed that temperatures on the order of 700–1000 °C are needed to fully desorb C-H, C-O and Si-O species from these surfaces. However, using TPD, the authors observed H{sub 2} desorption at both lower temperatures (200–550 °C) as well as higher temperatures (>700 °C). The low temperature H{sub 2} desorption was deconvoluted into multiple desorption states that, based on similarities to H{sub 2} desorption from Si (111), were attributed to silicon mono, di, and trihydride surface species as well as hydrogen trapped by subsurface defects, steps, or dopants. The higher temperature H{sub 2} desorption was similarly attributed to H{sub 2} evolved from surface O-H groups at ∼750 °C as well as the liberation of H{sub 2} during Si-O desorption at temperatures >800 °C. These results indicate that while ex-situ aqueous HF processed 6H-SiC (0001) surfaces annealed at <700 °C remain terminated by some surface C�

SiC Composite Turbine Vanes

NASA Technical Reports Server (NTRS)

Calomino, Anthony M.; Verilli, Michael J.

2006-01-01

Turbine inlet guide vanes have been fabricated from composites of silicon carbide fibers in silicon carbide matrices. A unique design for a cloth made from SiC fibers makes it possible to realize the geometric features necessary to form these vanes in the same airfoil shapes as those of prior metal vanes. The fiber component of each of these vanes was made from SiC-fiber cloth coated with boron nitride. The matrix was formed by chemical-vapor infiltration with SiC, then slurry-casting of SiC, followed by melt infiltration with silicon. These SiC/SiC vanes were found to be capable of withstanding temperatures 400 F (222 C) greater than those that can be withstood by nickel-base-superalloy turbine airfoils now in common use in gas turbine engines. The higher temperature capability of SiC/SiC parts is expected to make it possible to use them with significantly less cooling than is used for metallic parts, thereby enabling engines to operate more efficiently while emitting smaller amounts of NOx and CO. The SiC/SiC composite vanes were fabricated in two different configurations. Each vane of one of the configurations has two internal cavities formed by a web between the suction and the pressure sides of the vane. Each vane of the other configuration has no web (see Figure 1). It is difficult to fabricate components having small radii, like those of the trailing edges of these vanes, by use of stiff stoichiometric SiC fibers currently preferred for SiC/SiC composites. To satisfy the severe geometric and structural requirements for these vanes, the aforementioned unique cloth design, denoted by the term Y-cloth, was conceived (see Figure 2). In the regions away from the trailing edge, the Y-cloth features a fiber architecture that had been well characterized and successfully demonstrated in combustor liners. To form a sharp trailing edge (having a radius of 0.3 mm), the cloth was split into two planes during the weaving process. The fiber tows forming the trailing

Electrochemical sensor for monitoring electrochemical potentials of fuel cell components

DOEpatents

Kunz, Harold R.; Breault, Richard D.

1993-01-01

An electrochemical sensor comprised of wires, a sheath, and a conduit can be utilized to monitor fuel cell component electric potentials during fuel cell shut down or steady state. The electrochemical sensor contacts an electrolyte reservoir plate such that the conduit wicks electrolyte through capillary action to the wires to provide water necessary for the electrolysis reaction which occurs thereon. A voltage is applied across the wires of the electrochemical sensor until hydrogen evolution occurs at the surface of one of the wires, thereby forming a hydrogen reference electrode. The voltage of the fuel cell component is then determined with relation to the hydrogen reference electrode.

Structural changes of Ti3SiC2 induced by helium irradiation with different doses

NASA Astrophysics Data System (ADS)

Zhang, Hongliang; Su, Ranran; Shi, Liqun; O'Connor, Daryl J.; Wen, Haiming

2018-03-01

In this study, the microstructure changes of Ti3SiC2 MAX phase material induced by helium irradiation and evolution with a sequence of different helium irradiation doses of 5 × 1015, 1 × 1016, 5 × 1016 and 1 × 1017 cm-2 at room temperature (RT) were characterized with grazing incidence X-ray diffraction (GIXRD) and Raman spectra analysis. The irradiation damage process of Ti3SiC2 can be roughly divided into three stages according to the level of helium irradiation dose: (1) for a low damage dose, only crystal and damaged Ti3SiC2 exit; (2) at a higher irradiation dose, there is some damaged TiC phase additionally; (3) with a much higher irradiation dose, crystal TiC phase could be found inside the samples as well. Moreover, the 450 °C 5 × 1016 cm-2 helium irradiation on Ti3SiC2 has confirmed that Ti3SiC2 has much higher irradiation tolerance at higher temperature, which implies that Ti3SiC2 could be a potential future structural and fuel coating material working at high temperature environments.

Liquid-vapour surface sensors for liquid nitrogen and hydrogen

NASA Technical Reports Server (NTRS)

Siegwarth, J. D.; Voth, R. O.; Snyder, S. M.

1992-01-01

The present paper identifies devices to serve as liquid-vapor detectors in zero gravity. The testing in LH2 was done in a sealed glass Dewar system to eliminate any chance of mixing H2 and air. Most of the tests were performed with the leads to the sensor horizontal. Some results of rapid cycle testing of LVDG in LH2 are presented. Findings of rapid-cycle testing of LVDG in LH2 are discussed. The sensor crossed the liquid surface when the position sensor registered 1.9 V, which occurred at about 0.4075 s. The delay time was about 1.5 ms. From the estimated slope of the position sensor curve at 1.9 V, the velocity of the sensor through the liquid surface is over 3 m/s. Results of tests of optical sensors are presented as well.

Molten salt corrosion of SiC: Pitting mechanism

NASA Technical Reports Server (NTRS)

Jacobson, N. S.; Smialek, J. L.

1985-01-01

Thin films of Na2SO4 and Na2CO3 at 1000 C lead to severe pitting of sintered alpha-SiC. These pits are important as they cause a strength reduction in this material. The growth of product layers is related to pit formation for the Na2CO3 case. The early reaction stages involve repeated oxidation and dissolution to form sodium silicate. This results in severe grain boundary attack. After this a porous silica layer forms between the sodium silicate melt and the SiC. The pores in this layer appear to act as paths for the melt to reach the SiC and create larger pits.

UV-IR Hydrogen Fire Detector

NASA Technical Reports Server (NTRS)

Medelius, Pedro J.; Steinrock, T. (Technical Monitor)

2001-01-01

The objective of this project is to design a sensor than can accurately determine the presence of a hydrogen fire within its field of view and to eliminate the main cause of false alarms: reflections from the flare stack. Details are given in viewgraph presentation form on the technical approach, initial testing, sensor testing, intellectual property, patented technology, and licensing.

Hydrogen peroxide and glucose concentration measurement using optical fiber grating sensors with corrodible plasmonic nanocoatings

PubMed Central

Zhang, Xuejun; Wu, Ze; Liu, Fu; Fu, Qiangqiang; Chen, Xiaoyong; Xu, Jian; Zhang, Zhaochuan; Huang, Yunyun; Tang, Yong; Guo, Tuan; Albert, Jacques

2018-01-01

We propose and demonstrate hydrogen peroxide (H2O2) and glucose concentration measurements using a plasmonic optical fiber sensor. The sensor utilizes a tilted fiber Bragg grating (TFBG) written in standard single mode communication fiber. The fiber is over coated with an nm-scale film of silver that supports surface plasmon resonances (SPRs). Such a tilted grating SPR structure provides a high density of narrow spectral resonances (Q-factor about 105) that overlap with the broader absorption band of the surface plasmon waves in the silver film, thereby providing an accurate tool to measure small shifts of the plasmon resonance frequencies. The H2O2 to be detected acts as an oxidant to etch the silver film, which has the effect of gradually decreasing the SPR attenuation. The etching rate of the silver film shows a clear relationship with the H2O2 concentration so that monitoring the progressively increasing attenuation of a selected surface plasmon resonance over a few minutes enables us to measure the H2O2 concentration with a limit of detection of 0.2 μM. Furthermore, the proposed method can be applied to the determination of glucose in human serum for a concentration range from 0 to 12 mM (within the physiological range of 3-8 mM) by monitoring the H2O2 produced by an enzymatic oxidation process. The sensor does not require accurate temperature control because of the inherent temperature insensitivity of TFBG devices referenced to the core mode resonance. A gold mirror coated on the fiber allows the sensor to work in reflection, which will facilitate the integration of the sensor with a hypodermic needle for in vitro measurements. The present study shows that Ag-coated TFBG-SPR can be applied as a promising type of sensing probe for optical detection of H2O2 and glucose detection in human serum. PMID:29675315

Hydrogen peroxide and glucose concentration measurement using optical fiber grating sensors with corrodible plasmonic nanocoatings.

PubMed

Zhang, Xuejun; Wu, Ze; Liu, Fu; Fu, Qiangqiang; Chen, Xiaoyong; Xu, Jian; Zhang, Zhaochuan; Huang, Yunyun; Tang, Yong; Guo, Tuan; Albert, Jacques

2018-04-01

We propose and demonstrate hydrogen peroxide (H 2 O 2 ) and glucose concentration measurements using a plasmonic optical fiber sensor. The sensor utilizes a tilted fiber Bragg grating (TFBG) written in standard single mode communication fiber. The fiber is over coated with an nm-scale film of silver that supports surface plasmon resonances (SPRs). Such a tilted grating SPR structure provides a high density of narrow spectral resonances (Q-factor about 10 5 ) that overlap with the broader absorption band of the surface plasmon waves in the silver film, thereby providing an accurate tool to measure small shifts of the plasmon resonance frequencies. The H 2 O 2 to be detected acts as an oxidant to etch the silver film, which has the effect of gradually decreasing the SPR attenuation. The etching rate of the silver film shows a clear relationship with the H 2 O 2 concentration so that monitoring the progressively increasing attenuation of a selected surface plasmon resonance over a few minutes enables us to measure the H 2 O 2 concentration with a limit of detection of 0.2 μM. Furthermore, the proposed method can be applied to the determination of glucose in human serum for a concentration range from 0 to 12 mM (within the physiological range of 3-8 mM) by monitoring the H 2 O 2 produced by an enzymatic oxidation process. The sensor does not require accurate temperature control because of the inherent temperature insensitivity of TFBG devices referenced to the core mode resonance. A gold mirror coated on the fiber allows the sensor to work in reflection, which will facilitate the integration of the sensor with a hypodermic needle for in vitro measurements. The present study shows that Ag-coated TFBG-SPR can be applied as a promising type of sensing probe for optical detection of H 2 O 2 and glucose detection in human serum.

Hydrogen Research for Spaceport and Space-Based Applications: Hydrogen Production, Storage, and Transport. Part 3

NASA Technical Reports Server (NTRS)

Anderson, Tim; Balaban, Canan

2008-01-01

The activities presented are a broad based approach to advancing key hydrogen related technologies in areas such as fuel cells, hydrogen production, and distributed sensors for hydrogen-leak detection, laser instrumentation for hydrogen-leak detection, and cryogenic transport and storage. Presented are the results from research projects, education and outreach activities, system and trade studies. The work will aid in advancing the state-of-the-art for several critical technologies related to the implementation of a hydrogen infrastructure. Activities conducted are relevant to a number of propulsion and power systems for terrestrial, aeronautics and aerospace applications. Hydrogen storage and in-space hydrogen transport research focused on developing and verifying design concepts for efficient, safe, lightweight liquid hydrogen cryogenic storage systems. Research into hydrogen production had a specific goal of further advancing proton conducting membrane technology in the laboratory at a larger scale. System and process trade studies evaluated the proton conducting membrane technology, specifically, scale-up issues.

Comparison of the dynamic fatigue behavior of two monolithic SiC and an Al{sub 2}O{sub 3}/SiC composite

DOE Office of Scientific and Technical Information (OSTI.GOV)

Breder, K.; Tennery, V.J.

1994-09-01

Two monolithic silicon carbides, NT230 siliconized SiC from Norton Saint Gobain and sintered {beta}-SiC from Coors, and a silicon carbide particulate reinforced alumina ceramic composite from Lanxide, which all are candidate materials for pressurized heat exchangers in coal-fired power plants have been evaluated. The fast fracture flexure strength was measured as a function of temperature. All candidate materials retained a sufficient strength level up to 1400C. The susceptibility to slow crack growth (SCG) was evaluated by the dynamic fatigue method at 1100C and 1400C. None of the materials exhibited SCG at 1100C. At 1400C the siliconized SiC ceramic showed limitedmore » SCG and the composite ceramic exhibited creep damage when stressed to 50% of fast fracture strength at the intermediate and slow stressing rates. This prevented the evaluation of the SCG properties of this material at 1400C. Fractography supported the mechanical observations and with the exception of the specimens which exhibited creep damage, only the siliconized SiC showed a small SCG damage zone at long times at 1400C.« less

Chemical Gas Sensors for Aeronautic and Space Applications

NASA Technical Reports Server (NTRS)

Hunter, Gary W.; Chen, Liang-Yu; Neudeck, Philip G.; Knight, Dak; Liu, Chung-Chiun; Wu, Quing-Hai; Zhou, Huan-Jun

1997-01-01

Aeronautic and space applications require the development of chemical sensors with capabilities beyond those of commercially available sensors. Two areas of particular interest are safety monitoring and emission monitoring. In safety monitoring, detection of low concentrations of hydrogen at potentially low temperatures is important while for emission monitoring the detection of nitrogen oxides, hydrogen, hydrocarbons and oxygen is of interest. This paper discusses the needs of aeronautic and space applications and the point-contact sensor technology being developed to address these needs. The development of these sensors is based on progress in two types of technology: (1) Micromachining and microfabrication technology to fabricate miniaturized sensors. (2) The development of high temperature semiconductors, especially silicon carbide. The detection of each type of gas involves its own challenges in the fields of materials science and fabrication technology. The number of dual-use commercial applications of this microfabricated gas sensor technology make this general area of sensor development a field of significant interest.

Microstructure, hardness and modulus of carbon-ion-irradiated new SiC fiber (601-4)

NASA Astrophysics Data System (ADS)

Huang, Qing; Lei, Guanhong; Liu, Renduo; Li, Jianjian; Yan, Long; Li, Cheng; Liu, Weihua; Wang, Mouhua

2018-05-01

Two types of SiC fibers, one is low-oxygen and carbon-rich fiber denoted by 601-4 and the other is low-oxygen and near-stoichiometric Tyranno SA, were irradiated with 450 keV C+ ions at room temperature. The Raman spectra indicate that irradiation induced distortion and amorphization of SiC crystallites in fibers. TEM characterization of Tyranno SA suggests that SiC crystallites undergo a continued fragmentation into smaller crystalline islands and a continued increase of surrounding amorphous structure. The SiC nano-crystallites (<15 nm) in 601-4 fiber are more likely to be amorphized than larger crystallites (∼200 nm) in Tyranno SA. The hardness and modulus of 601-4 continuously decreases with increasing fluence, while that of Tyranno SA first increases and then decreases.

Active Oxidation of SiC

NASA Technical Reports Server (NTRS)

Jacobson, Nathan S.; Myers,Dwight L.; Harder, Bryan J.

2011-01-01

The high temperature oxidation of silicon carbide occurs in either a passive or active mode, depending on temperature and oxygen potential. Passive oxidation forms a protective oxide film which limits attack of the SiC:SiC(s) + 3/2 O2(g) = SiO2(s) + CO(g.) Active oxidation forms a volatile oxide and leads to extensive attack of the SiC: SiC(s) + O2(g) = SiO(g) + CO(g). The transition points and rates of active oxidation are a major issue. Previous studies are reviewed and the leading theories of passive/active transitions summarized. Comparisons are made to the active/passive transitions in pure Si, which are relatively well-understood. Critical questions remain about the difference between the active-to-passive transition and passive-to-active transition. For Si, Wagner [2] points out that the active-to-passive transition is governed by the criterion for a stable Si/SiO2 equilibria and the passive-to-active transition is governed by the decomposition of the SiO2 film. This suggests a significant oxygen potential difference between these two transitions and our experiments confirm this. For Si, the initial stages of active oxidation are characterized by the formation of SiO(g) and further oxidation to SiO2(s) as micron-sized rods, with a distinctive morphology. SiC shows significant differences. The active-to-passive and the passive-to-active transitions are close. The SiO2 rods only appear as the passive film breaks down. These differences are explained in terms of the reactions at the SiC/SiO2 interface. In order to understand the breakdown of the passive film, pre-oxidation experiments are conducted. These involve forming dense protective scales of 0.5, 1, and 2 microns and then subjecting the samples with these scales to a known active oxidation environment. Microstructural studies show that SiC/SiO2 interfacial reactions lead to a breakdown of the scale with a distinct morphology.

Characterization and Modeling of Electrical Response of Electrode Catalyzed Reactions in AIGaN/GaN-Based Gas Sensors

NASA Astrophysics Data System (ADS)

Melby, Jacob H.

AlGaN/GaN high electron mobility transistors (HEMT) and AlGaN/GaN diodes have promise for use as hydrogen and hydrocarbon sensors for a variety of industrial, military, and commercial applications. These semiconductor-based sensors have a number of advantages over other sensor technologies, such as the ability to operate at high temperatures, in corrosive environments, or under ionizing radiation. The high sensitivity of these devices to hydrogen-containing gases is associated with polarization differences within the AlGaN/GaN heterostructure that give rise to the formation of a two-dimensional electron gas (2DEG); exposure of the device to hydrogen changes the density of the 2DEG, which can be detected in a HEMT or diode structure. Although sensitivity to a range of gases has been reported, the factors that influence the behavior of the sensors are not well studied. The overarching goals of the research that follows were to determine how gas exposure conditions affect sensor behavior, to characterize and model the relationship between the electrical response of the sensors and the external gaseous environment, and to investigate the effects of using different metal catalysts on sensor behavior. The heterostructures used in this work were grown via metalorganic vapor phase epitaxy (MOVPE). Schottky diode and transistor devices employing platinum-group (Pd, Pt, Rh, Ir, Ru, and Os) catalysts were fabricated to allow electrical sensitivity in the presence of hydrogen and hydrogen containing gases. The generation of atomic hydrogen on the catalyst surface results in the rapid formation of hydrogen dipoles at the metal-semiconductor interface, which produces a measurable electronic response. The electrical response of Pt-gated HEMT-based sensors were measured in a flowing gaseous stream consisting of hydrogen in a pure nitrogen diluent at ambient and elevated temperatures. The transistors exhibited excellent transfer characteristics for temperatures ranging from 25�

Epitaxial Growth of beta-Silicon Carbide (SiC) on a Compliant Substrate via Chemical Vapor Deposition (CVD)

NASA Technical Reports Server (NTRS)

Mitchell, Sharanda L.

1996-01-01

Many lattice defects have been attributed to the lattice mismatch and the difference in the thermal coefficient of expansion between SiC and silicon (Si). Stacking faults, twins and antiphase boundaries are some of the lattice defects found in these SiC films. These defects may be a partial cause of the disappointing performance reported for the prototype devices fabricated from beta-SiC films. The objective of this research is to relieve some of the thermal stress due to lattice mismatch when SiC is epitaxially grown on Si. The compliant substrate is a silicon membrane 2-4 microns thick. The CVD process includes the buffer layer which is grown at 1360 C followed by a very thin epitaxial growth of SiC. Then the temperature is raised to 1500 C for the subsequent growth of SiC. Since silicon melts at 1415 C, the SiC will be grown on molten Silicon which is absorbed by a porous graphite susceptor eliminating the SiC/Si interface. We suspect that this buffer layer will yield less stressed material to help in the epitaxial growth of SiC.

Surface acoustic wave hydrogen sensor

NASA Technical Reports Server (NTRS)

Bhethanabotla, Venkat R. (Inventor); Bhansali, Shekhar (Inventor)

2006-01-01

The present invention provides a delay line SAW device fabricated on a lithium niobate substrate and coated with a bilayer of nanocrystalline or other nanomaterials such as nanoparticles or nanowires of palladiumn and metal free pthalocyanine which will respond to hydrogen gas in near real time, at low (room) temperature, without being affected by CO, O.sub.2, CH.sub.4 and other gases, in air ambient or controlled ambient, providing sensitivity to low ppm levels.

Microfabricated Chemical Gas Sensors and Sensor Arrays for Aerospace Applications

NASA Technical Reports Server (NTRS)

Hunter, Gary W.

2005-01-01

Aerospace applications require the development of chemical sensors with capabilities beyond those of commercially available sensors. In particular, factors such as minimal sensor size, weight, and power consumption are particularly important. Development areas which have potential aerospace applications include launch vehicle leak detection, engine health monitoring, and fire detection. Sensor development for these applications is based on progress in three types of technology: 1) Micromachining and microfabrication (Microsystem) technology to fabricate miniaturized sensors; 2) The use of nanocrystalline materials to develop sensors with improved stability combined with higher sensitivity; 3) The development of high temperature semiconductors, especially silicon carbide. This presentation discusses the needs of space applications as well as the point-contact sensor technology and sensor arrays being developed to address these needs. Sensors to measure hydrogen, hydrocarbons, nitrogen oxides (NO,), carbon monoxide, oxygen, and carbon dioxide are being developed as well as arrays for leak, fire, and emissions detection. Demonstrations of the technology will also be discussed. It is concluded that microfabricated sensor technology has significant potential for use in a range of aerospace applications.

The Social Interactive Coding System (SICS): An On-Line, Clinically Relevant Descriptive Tool.

ERIC Educational Resources Information Center

Rice, Mabel L.; And Others

1990-01-01

The Social Interactive Coding System (SICS) assesses the continuous verbal interactions of preschool children as a function of play areas, addressees, script codes, and play levels. This paper describes the 26 subjects and the setting involved in SICS development, coding definitions and procedures, training procedures, reliability, sample…

An effective temperature compensation approach for ultrasonic hydrogen sensors

NASA Astrophysics Data System (ADS)

Tan, Xiaolong; Li, Min; Arsad, Norhana; Wen, Xiaoyan; Lu, Haifei

2018-03-01

Hydrogen is a kind of promising clean energy resource with a wide application prospect, which will, however, cause a serious security issue upon the leakage of hydrogen gas. The measurement of its concentration is of great significance. In a traditional approach of ultrasonic hydrogen sensing, a temperature drift of 0.1 °C results in a concentration error of about 250 ppm, which is intolerable for trace amount of gas sensing. In order to eliminate the influence brought by temperature drift, we propose a feasible approach named as linear compensation algorithm, which utilizes the linear relationship between the pulse count and temperature to compensate for the pulse count error (ΔN) caused by temperature drift. Experimental results demonstrate that our proposed approach is capable of improving the measurement accuracy and can easily detect sub-100 ppm of hydrogen concentration under variable temperature conditions.

A portable gas sensor based on cataluminescence.

PubMed

Kang, C; Tang, F; Liu, Y; Wu, Y; Wang, X

2013-01-01

We describe a portable gas sensor based on cataluminescence. Miniaturization of the gas sensor was achieved by using a miniature photomultiplier tube, a miniature gas pump and a simple light seal. The signal to noise ratio (SNR) was considered as the evaluation criteria for the design and testing of the sensor. The main source of noise was from thermal background. Optimal working temperature and flow rate were determined experimentally from the viewpoint of improvement in SNR. A series of parameters related to analytical performance was estimated. The limitation of detection of the sensor was 7 ppm (SNR = 3) for ethanol and 10 ppm (SNR = 3) for hydrogen sulphide. Zirconia and barium carbonate were respectively selected as nano-sized catalysts for ethanol and hydrogen sulphide. Copyright © 2012 John Wiley & Sons, Ltd.

Thermostructural Properties Of Sic/Sic Panels With 2.5d And 3d Fiber Architectures

NASA Technical Reports Server (NTRS)

Yun, H. M.; DeCarlo, J. A.; Bhatt, R. H.; Jaskowiak, M. H.

2005-01-01

CMC hot-section components in advanced engines for power and propulsion will typically require high cracking strength, high ultimate strength and strain, high creep- rupture resistance, and high thermal conductivity in all directions. In the past, NASA has demonstrated fabrication of a variety of SiC/SiC flat panels and round tubes with various 2D fiber architectures using the high-modulus high-performance Sylramic-iBN Sic fiber and Sic-based matrices derived by CVI, MI, and/or PIP processes. The thermo- mechanical properties of these CMC have shown state-of-the-art performance, but primarily in the in-plane directions. Currently NASA is extending the thermostructural capability of these SiC/SiC systems in the thru-thickness direction by using various 2.5D and 3D fiber architectures. NASA is also using specially designed fabrication steps to optimize the properties of the BN-based interphase and Sic-based matrices. In this study, Sylramic-iBN/SiC panels with 2D plain weave, 2.5D satin weave, 2.5D ply-to-ply interlock weave, and 3D angle interlock fiber architectures, all woven at AITI, were fabricated using matrix densification routes previously established between NASA and GEPSC for CVI-MI processes and between NASA and Starfire-Systems for PIP processes. Introduction of the 2.5 D fiber architecture along with an improved matrix process was found to increase inter-laminar tensile strength from 1.5 -2 to 3 - 4 ksi and thru-thickness thermal conductivity from 15-20 to 30-35 BTU/ft.hr.F with minimal reduction in in-plane strength and creep-rupture properties. Such improvements should reduce thermal stresses and increase the thermostructural operating envelope for SiC/SiC engine components. These results are analyzed to offer general guidelines for selecting fiber architectures and constituent processes for high-performance SiC/SiC engine components.

Packaged Capacitive Pressure Sensor System for Aircraft Engine Health Monitoring

NASA Technical Reports Server (NTRS)

Scardelletti, Maximilian C.; Zorman, Christian A.

2016-01-01

This paper describes the development of a packaged silicon carbide (SiC) based MEMS pressure sensor system designed specifically for a conventional turbofan engine. The electronic circuit is based on a Clapp-type oscillator that incorporates a 6H-SiC MESFET, a SiCN MEMS capacitive pressure sensor, titanate MIM capacitors, wirewound inductors, and thick film resistors. The pressure sensor serves as the capacitor in the LC tank circuit, thereby linking pressure to the resonant frequency of the oscillator. The oscillator and DC bias circuitry were fabricated on an alumina substrate and secured inside a metal housing. The packaged sensing system reliably operates at 0 to 350 psi and 25 to 540C. The system has a pressure sensitivity of 6.8 x 10E-2 MHzpsi. The packaged system shows negligible difference in frequency response between 25 and 400C. The fully packaged sensor passed standard benchtop acceptance tests and was evaluated on a flight-worthy engine.

Silicon Carbide-Based Hydrogen and Hydrocarbon Gas Detection

NASA Technical Reports Server (NTRS)

Hunter, Gary W.; Neudeck, Philip G.; Chen, Liang-Yu; Knight, D.; Liu, C. C.; Wu, Q. H.R

1995-01-01

Hydrogen and hydrocarbon detection in aeronautical applications is important for reasons of safety and emissions control. The use of silicon carbide as a semiconductor in a metal-semiconductor or metal-insulator-semiconductor structure opens opportunities to measure hydrogen and hydrocarbons in high temperature environments beyond the capabilities of silicon-based devices. The purpose of this paper is to explore the response and stability of Pd-SiC Schottky diodes as gas sensors in the temperature range from 100 to 400 C. The effect of heat treating on the diode properties as measured at 100 C is explored. Subsequent operation at 400 C demonstrates the diodes' sensitivity to hydrogen and hydrocarbons. It is concluded that the Pd-SiC Schottky diode has potential as a hydrogen and hydrocarbon sensor over a wide range of temperatures but further studies are necessary to determine the diodes' long term stability.

Creep behavior for advanced polycrystalline SiC fibers

DOE Office of Scientific and Technical Information (OSTI.GOV)

Youngblood, G.E.; Jones, R.H.; Kohyama, Akira

1997-04-01

A bend stress relaxation (BSR) test has been utilized to examine irradiation enhanced creep in polycrystalline SiC fibers which are under development for use as fiber reinforcement in SiC/SiC composite. Qualitative, S-shaped 1hr BSR curves were compared for three selected advanced SiC fiber types and standard Nicalon CG fiber. The temperature corresponding to the middle of the S-curve (where the BSR parameter m = 0.5) is a measure of a fiber`s thermal stability as well as it creep resistance. In order of decreasing thermal creep resistance, the measured transition temperatures were Nicalon S (1450{degrees}C), Sylramic (1420{degrees}C), Hi-Nicalon (1230{degrees}C) and Nicalonmore » CG (1110{degrees}C).« less

Comparison of ocular comfort, vision, and SICS during silicone hydrogel contact lens daily wear.

PubMed

Diec, Jennie; Evans, Victoria E; Tilia, Daniel; Naduvilath, Thomas; Holden, Brien A; Lazon de la Jara, Percy

2012-01-01

The aim of this study was to investigate the relationship between solution-induced corneal staining (SICS) and silicone hydrogel contact lens comfort and vision. A retrospective analysis of a series of open-label studies were conducted with 24 groups of approximately 40 participants, each wearing 1 of 6 silicone hydrogel contact lenses with 1 of 4 lens care products bilaterally for 3 months of daily wear. The presence of SICS and subjective ocular ratings were collected at 2 weeks and at 1 and 3 months. A total of 1,051 participants were enrolled. The participants with SICS rated significantly less favorably than did the participants without SICS for comfort during the day (7.9±1.7 vs. 8.5±1.4, P=0.03), comfort at the end of the day (6.6±2.1 vs. 7.4±1.9, P=0.03), overall dryness (7.4±1.9 vs. 8.0±1.7, P=0.04), dryness at the end of the day (6.7±2.2 vs. 7.5±2.1, P=0.01), feelings of burning and stinging (8.5±2.0 vs. 8.9±1.8, P=0.02), and overall vision (8.2±1.6 vs. 8.7±1.3, P<0.001). The participants with SICS had lower subjective comfort and vision compared with those who did not experience SICS.