Concept Demonstration of Dopant Selective Reactive Etching (DSRIE) in Silicon Carbide

NASA Technical Reports Server (NTRS)

Okojie, Robert S.

2015-01-01

Accurate quantification of combustor pressure dynamics for the primary purpose of experimental validation of computational fluid dynamics (CFD) codes requires the use of robust, reliable and sensitive pressure sensors that can resolve sub--pound-per-square-inch pressure levels in high temperature environments (i.e., combustor). The state of the art microfabricated piezoresistive silicon carbide (SiC) pressure sensors that we have developed are capable of operating reliably at 600 degrees Centigrade. This technology was used in support of the ARMD ISRP-ERA (NASA's Aeronautics Research Mission Directorate, Integrated System Research Project - Environmentally Responsible Aviation) program to quantify combustor thermoacoustic instabilities. The results showed that while the SiC pressure sensors survived the high temperature and measured instabilities, the diaphragm (force collector) was not thin enough to be sensitive in resolving sub-pound-per-square-inch pressures; 30 meters is the thinnest diaphragm achievable with conventional reactive ion etching (RIE) processes. Therefore, this precludes its use for sub-pound-per-square-inch pressure measurement with high fidelity. In order to effectively resolve sub-pound-per-square-inch pressures, a thinner more sensitive diaphragm (10 meters) is needed. To achieve this would require a new and innovative fabrication process technique.

Sensors Increase Productivity in Harsh Environments

NASA Technical Reports Server (NTRS)

2008-01-01

California's San Juan Capistrano-based Endevco Corporation licensed three patents covering high-temperature, harsh-environment silicon carbide (Si-C) pressure sensors from Glenn Research Center. The company is exploring their use in government markets, as well as in commercial markets, including commercial jet testing, deep well drilling applications where pressure and temperature increase with drilling depth, and in automobile combustion chambers.

The Commercialization of the SiC Flame Sensor

NASA Astrophysics Data System (ADS)

Fedison, Jeffrey B.

2002-03-01

The technical and scientific steps required to produce large quantities of SiC flame sensors is described. The technical challenges required to understand, fabricate, test and package SiC photodiodes in 1990 were numerous since SiC device know how was embryonic. A sense of urgency for a timely replacement of the Geiger Muller gas discharge tube soon entered the scene. New dual fuel GE Power Systems gas turbines, which were designed to lean burn either natural gas or oil for low NOx emissions required a much higher sensitivity sensor. Joint work between GE CRD and Cree Research sponsored by the GE Aircraft Engine Division developed the know how for the fabrication of high sensitivity, high yield, reliable SiC photodiodes. Yield issues were uncovered and overcome. The urgency for system insertion required that SiC diode and sensor circuitry development needed to be carried out simultaneously with power plant field tests of laboratory or prototype sensor assemblies. The sensor and reliability specifications were stringent since the sensors installed on power plant turbine combustor walls are subjected to high levels of vibration, elevated temperatures, and high pressures. Furthermore a fast recovery time was required to sense flame out in spite of the fact that the amplifier circuit needed have high gain and high dynamic range. SiC diode technical difficulties were encountered and overcome. The science of hydrocarbon flames will also be described together with the fortunate overlap of the strong OH emission band with the SiC photodiode sensitivity versus wavelength characteristic. The extremely low dark current (<1pA/cm^2) afforded by the wide band gap and the 3eV sensitivity cutoff at 400nm made if possible to produce low amplifier offsets, high sensitivity and high dynamic range along with immunity to black body radiation from combustor walls. Field tests at power plants that had experienced turbine tripping, whenever oil fuel and/or oil with steam injection for power augmentation, were extremely encouraging. This warrantee problem previously due to the low sensitivity of the Geiger Muller tube was solved using the much higher sensitivity SiC detector. This sensitivity increase is partially due to the fact that the SiC photodiode “sees” the strong OH emission band whereas the Geiger Muller tube can only respond to the shorter wavelength CO emission band. Other successful field tests were observed and acclaimed by power plant operators, which for the first time could track mode switching and power level (flame intensity) because of the high dynamic range (>5000:1). The demand for this product thereupon rose dramatically. This success, the first for SiC devices other than that of SiC blue LEDs, is leading GE to implement this technology in other application fields.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Nabeel A. Riza

The goals of the Year 2006 Continuation Phase 2 three months period (April 1 to Sept. 30) of this project were to (a) conduct a probe elements industrial environment feasibility study and (b) fabricate embedded optical phase or microstructured SiC chips for individual gas species sensing. Specifically, SiC chips for temperature and pressure probe industrial applications were batch fabricated. Next, these chips were subject to a quality test for use in the probe sensor. A batch of the best chips for probe design were selected and subject to further tests that included sensor performance based on corrosive chemical exposure, powermore » plant soot exposure, light polarization variations, and extreme temperature soaking. Experimental data were investigated in detail to analyze these mentioned industrial parameters relevant to a power plant. Probe design was provided to overcome mechanical vibrations. All these goals have been achieved and are described in detail in the report. The other main focus of the reported work is to modify the SiC chip by fabricating an embedded optical phase or microstructures within the chip to enable gas species sensing under high temperature and pressure. This has been done in the Kar UCF Lab. using a laser-based system whose design and operation is explained. Experimental data from the embedded optical phase-based chip for changing temperatures is provided and shown to be isolated from gas pressure and species. These design and experimentation results are summarized to give positive conclusions on the proposed high temperature high pressure gas species detection optical sensor technology.« less

Development of Sic Gas Sensor Systems

NASA Technical Reports Server (NTRS)

Hunter, G. W.; Neudeck, P. G.; Okojie, R. S.; Beheim, G. M.; Thomas, V.; Chen, L.; Lukco, D.; Liu, C. C.; Ward, B.; Makel, D.

2002-01-01

Silicon carbide (SiC) based gas sensors have significant potential to address the gas sensing needs of aerospace applications such as emission monitoring, fuel leak detection, and fire detection. However, in order to reach that potential, a range of technical challenges must be overcome. These challenges go beyond the development of the basic sensor itself and include the need for viable enabling technologies to make a complete gas sensor system: electrical contacts, packaging, and transfer of information from the sensor to the outside world. This paper reviews the status at NASA Glenn Research Center of SiC Schottky diode gas sensor development as well as that of enabling technologies supporting SiC gas sensor system implementation. A vision of a complete high temperature microfabricated SiC gas sensor system is proposed. In the long-term, it is believed that improvements in the SiC semiconductor material itself could have a dramatic effect on the performance of SiC gas sensor systems.

High Temperature Capacitive Pressure Sensor Employing a SiC Based Ring Oscillator

NASA Technical Reports Server (NTRS)

Meredith, Roger D.; Neudeck, Philip G.; Ponchak, George E.; Beheim, Glenn M.; Scardelletti, Maximilian; Jordan, Jennifer L.; Chen, Liang-Yu; Spry, David J.; Krawowski, Michael J.; Hunter, Gary W.

2011-01-01

In an effort to develop harsh environment electronic and sensor technologies for aircraft engine safety and monitoring, we have used capacitive-based pressure sensors to shift the frequency of a SiC-electronics-based oscillator to produce a pressure-indicating signal that can be readily transmitted, e.g. wirelessly, to a receiver located in a more benign environment. Our efforts target 500 C, a temperature well above normal operating conditions of commercial circuits but within areas of interest in aerospace engines, deep mining applications and for future missions to the Venus atmosphere. This paper reports for the first time a ring oscillator circuit integrated with a capacitive pressure sensor, both operating at 500 C. This demonstration represents a significant step towards a wireless pressure sensor that can operate at 500 C and confirms the viability of 500 C electronic sensor systems.

Novel High Temperature Capacitive Pressure Sensor Utilizing SiC Integrated Circuit Twin Ring Oscillators

NASA Technical Reports Server (NTRS)

Scardelletti, M.; Neudeck, P.; Spry, D.; Meredith, R.; Jordan, J.; Prokop, N.; Krasowski, M.; Beheim, G.; Hunter, G.

2017-01-01

This paper describes initial development and testing of a novel high temperature capacitive pressure sensor system. The pressure sensor system consists of two 4H-SiC 11-stage ring oscillators and a SiCN capacitive pressure sensor. One oscillator has the capacitive pressure sensor fixed at one node in its feedback loop and varies as a function of pressure and temperature while the other provides a pressure-independent reference frequency which can be used to temperature compensate the output of the first oscillator. A two-day repeatability test was performed up to 500C on the oscillators and the oscillator fundamental frequency changed by only 1. The SiCN capacitive pressure sensor was characterized at room temperature from 0 to 300 psi. The sensor had an initial capacitance of 3.76 pF at 0 psi and 1.75 pF at 300 psi corresponding to a 54 change in capacitance. The integrated pressure sensor system was characterized from 0 to 300 psi in steps of 50 psi over a temperature range of 25 to 500C. The pressure sensor system sensitivity was 0.113 kHzpsi at 25C and 0.026 kHzpsi at 500C.

Silicon Carbide Gas Sensors for Propulsion Emissions and Safety Applications

NASA Technical Reports Server (NTRS)

Hunter, G. W.; Xu, J.; Neudeck, P. G.; Lukco, D.; Trunek, A.; Spry, D.; Lampard, P.; Androjna, D.; Makel, D.; Ward, B.

2007-01-01

Silicon carbide (SiC) based gas sensors have the ability to meet the needs of a range of aerospace propulsion applications including emissions monitoring, leak detection, and hydrazine monitoring. These applications often require sensitive gas detection in a range of environments. An effective sensing approach to meet the needs of these applications is a Schottky diode based on a SiC semiconductor. The primary advantage of using SiC as a semiconductor is its inherent stability and capability to operate at a wide range of temperatures. The complete SiC Schottky diode gas sensing structure includes both the SiC semiconductor and gas sensitive thin film metal layers; reliable operation of the SiC-based gas sensing structure requires good control of the interface between these gas sensitive layers and the SiC. This paper reports on the development of SiC gas sensors. The focus is on two efforts to better control the SiC gas sensitive Schottky diode interface. First, the use of palladium oxide (PdOx) as a barrier layer between the metal and SiC is discussed. Second, the use of atomically flat SiC to provide an improved SiC semiconductor surface for gas sensor element deposition is explored. The use of SiC gas sensors in a multi-parameter detection system is briefly discussed. It is concluded that SiC gas sensors have potential in a range of propulsion system applications, but tailoring of the sensor for each application is necessary.

800 C Silicon Carbide (SiC) Pressure Sensors for Engine Ground Testing

NASA Technical Reports Server (NTRS)

Okojie, Robert S.

2016-01-01

MEMS-based 4H-SiC piezoresistive pressure sensors have been demonstrated at 800 C, leading to the discovery of strain sensitivity recovery with increasing temperatures above 400 C, eventually achieving up to, or near, 100 recovery of the room temperature values at 800 C. This result will allow the insertion of highly sensitive pressure sensors closer to jet, rocket, and hypersonic engine combustion chambers to improve the quantification accuracy of combustor dynamics, performance, and increase safety margin. Also, by operating at higher temperature and locating closer to the combustion chamber, reduction of the length (weight) of pressure tubes that are currently used will be achieved. This will result in reduced costlb to access space.

Wireless Capacitive Pressure Sensor Operating up to 400 Celcius from 0 to 100 psi Utilizing Power Scavenging

NASA Technical Reports Server (NTRS)

Scardelletti, Maximilian C.; Ponchak, George E.; Harsh, Kevin; Mackey, Jonathan A.; Meredith, Roger D.; Zorman, Christian A.; Beheim, Glenn M.; Dynys, Frederick W.; Hunter, Gary W.

2014-01-01

In this paper, a wireless capacitive pressure sensor developed for the health monitoring of aircraft engines has been demonstrated. The sensing system is composed of a Clapp-type oscillator that operates at 131 MHz. The Clapp oscillator is fabricated on a alumina substrate and consists of a Cree SiC (silicon carbide) MESFET (Metal Semiconductor Field Effect Transistors), this film inductor, Compex chip capacitors and Sporian Microsystem capacitive pressure sensor. The resonant tank circuit within the oscillator is made up of the pressure sensor and a spiral thin film inductor, which is used to magnetically couple the wireless pressure sensor signal to a coil antenna placed over 1 meter away. 75% of the power used to bias the sensing system is generated from thermoelectric power modules. The wireless pressure sensor is operational at room temperature through 400 C from 0 to 100 psi and exhibits a frequency shift of over 600 kHz.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Nabeel A. Riza

The goals of the first six months of this project were to lay the foundations for both the SiC front-end optical chip fabrication as well as the free-space laser beam interferometer designs and preliminary tests. In addition, a Phase I goal was to design and experimentally build the high temperature and pressure infrastructure and test systems that will be used in the next 6 months for proposed sensor experimentation and data processing. All these goals have been achieved and are described in detail in the report. Both design process and diagrams for the mechanical elements as well as the opticalmore » systems are provided. In addition, photographs of the fabricated SiC optical chips, the high temperature & pressure test chamber instrument, the optical interferometer, the SiC sample chip holder, and signal processing data are provided. The design and experimentation results are summarized to give positive conclusions on the proposed novel high temperature optical sensor technology. The goals of the second six months of this project were to conduct high temperature sensing tests using the test chamber and optical sensing instrument designs developed in the first part of the project. In addition, a Phase I goal was to develop the basic processing theory and physics for the proposed first sensor experimentation and data processing. All these goals have been achieved and are described in detail. Both optical experimental design process and sensed temperature are provided. In addition, photographs of the fabricated SiC optical chips after deployment in the high temperature test chamber are shown from a material study point-of-view.« less

Packaging Technologies for 500 C SiC Electronics and Sensors: Challenges in Material Science and Technology

NASA Technical Reports Server (NTRS)

Chen, Liang-Yu; Neudeck, Philip G.; Behelm, Glenn M.; Spry, David J.; Meredith, Roger D.; Hunter, Gary W.

2015-01-01

This paper presents ceramic substrates and thick-film metallization based packaging technologies in development for 500C silicon carbide (SiC) electronics and sensors. Prototype high temperature ceramic chip-level packages and printed circuit boards (PCBs) based on ceramic substrates of aluminum oxide (Al2O3) and aluminum nitride (AlN) have been designed and fabricated. These ceramic substrate-based chip-level packages with gold (Au) thick-film metallization have been electrically characterized at temperatures up to 550C. The 96 alumina packaging system composed of chip-level packages and PCBs has been successfully tested with high temperature SiC discrete transistor devices at 500C for over 10,000 hours. In addition to tests in a laboratory environment, a SiC junction field-effect-transistor (JFET) with a packaging system composed of a 96 alumina chip-level package and an alumina printed circuit board was tested on low earth orbit for eighteen months via a NASA International Space Station experiment. In addition to packaging systems for electronics, a spark-plug type sensor package based on this high temperature interconnection system for high temperature SiC capacitive pressure sensors was also developed and tested. In order to further significantly improve the performance of packaging system for higher packaging density, higher operation frequency, power rating, and even higher temperatures, some fundamental material challenges must be addressed. This presentation will discuss previous development and some of the challenges in material science (technology) to improve high temperature dielectrics for packaging applications.

Design and fabrication of a differential scanning nanocalorimeter

NASA Astrophysics Data System (ADS)

Zuo, Lei; Chen, Xiaoming; Yu, Shifeng; Lu, Ming

2017-02-01

This paper describes the design, fabrication, and characterization of a differential scanning nanocalorimeter that significantly reduces the sample volume to microliters and can potentially improve the temperature sensitivity to 10 µK. The nanocalorimeter consists of a polymeric freestanding membrane, four high-sensitive low-noise thermistors based on silicon carbide (SiC), and a platinum heater and temperature sensor. With the integrated heater and sensors, temperature scanning and power compensation can be achieved for calorimetric measurement. Temperature sensing SiC film was prepared by using sintered SiC target and DC magnetron sputtering under different gas pressures and sputtering power. The SiC sensing material is characterized through the measurement of current-voltage curves and noise levels. The thermal performance of a fabricated nanocalorimeter is studied in simulation and experiment. The experiment results show the device has excellent thermal isolation to hold thermal energy. The noise test together with the simulation show the device is promising for micro 10 µK temperature sensitivity and nanowatt resolution which will lead to low-volume ultra-sensitive nanocalorimetry for biological processes, such as protein folding and ligand binding.

Packaged Capacitive Pressure Sensor System for Aircraft Engine Health Monitoring

NASA Technical Reports Server (NTRS)

Scardelletti, Maximilian C.; Zorman, Christian A.

2016-01-01

This paper describes the development of a packaged silicon carbide (SiC) based MEMS pressure sensor system designed specifically for a conventional turbofan engine. The electronic circuit is based on a Clapp-type oscillator that incorporates a 6H-SiC MESFET, a SiCN MEMS capacitive pressure sensor, titanate MIM capacitors, wirewound inductors, and thick film resistors. The pressure sensor serves as the capacitor in the LC tank circuit, thereby linking pressure to the resonant frequency of the oscillator. The oscillator and DC bias circuitry were fabricated on an alumina substrate and secured inside a metal housing. The packaged sensing system reliably operates at 0 to 350 psi and 25 to 540C. The system has a pressure sensitivity of 6.8 x 10E-2 MHzpsi. The packaged system shows negligible difference in frequency response between 25 and 400C. The fully packaged sensor passed standard benchtop acceptance tests and was evaluated on a flight-worthy engine.

Deep Etching Process Developed for the Fabrication of Silicon Carbide Microsystems

NASA Technical Reports Server (NTRS)

Beheim, Glenn M.

2000-01-01

Silicon carbide (SiC), because of its superior electrical and mechanical properties at elevated temperatures, is a nearly ideal material for the microminiature sensors and actuators that are used in harsh environments where temperatures may reach 600 C or greater. Deep etching using plasma methods is one of the key processes used to fabricate silicon microsystems for more benign environments, but SiC has proven to be a more difficult material to etch, and etch depths in SiC have been limited to several micrometers. Recently, the Sensors and Electronics Technology Branch at the NASA Glenn Research Center at Lewis Field developed a plasma etching process that was shown to be capable of etching SiC to a depth of 60 mm. Deep etching of SiC is achieved by inductive coupling of radiofrequency electrical energy to a sulfur hexafluoride (SF6) plasma to direct a high flux of energetic ions and reactive fluorine atoms to the SiC surface. The plasma etch is performed at a low pressure, 5 mtorr, which together with a high gas throughput, provides for rapid removal of the gaseous etch products. The lateral topology of the SiC microstructure is defined by a thin film of etch-resistant material, such as indium-tin-oxide, which is patterned using conventional photolithographic processes. Ions from the plasma bombard the exposed SiC surfaces and supply the energy needed to initiate a reaction between SiC and atomic fluorine. In the absence of ion bombardment, no reaction occurs, so surfaces perpendicular to the wafer surface (the etch sidewalls) are etched slowly, yielding the desired vertical sidewalls.

MEMS for Practical Applications

NASA Astrophysics Data System (ADS)

Esashi, Masayoshi

Silicon MEMS as electrostatically levitated rotational gyroscopes and 2D optical scanners, and wafer level packaged devices as integrated capacitive pressure sensors and MEMS switches are described. MEMS which use non-silicon materials as LTCC with electrical feedthrough, SiC and LiNbO3 for probe cards for wafer-level burn-in test, molds for glass press molding and SAW wireless passive sensors respectively are also described.

Design and fabrication of a differential scanning nanocalorimeter

DOE PAGES

Zuo, Lei; Chen, Xiaoming; Yu, Shifeng; ...

2016-12-19

This paper describes the design, fabrication, and characterization of a differential scanning nanocalorimeter that significantly reduces the sample volume to microliters and can potentially improve the temperature sensitivity to 10 µK. The nanocalorimeter consists of a polymeric freestanding membrane, four high-sensitive low-noise thermistors based on silicon carbide (SiC), and a platinum heater and temperature sensor. With the integrated heater and sensors, temperature scanning and power compensation can be achieved for calorimetric measurement. Temperature sensing SiC film was prepared by using sintered SiC target and DC magnetron sputtering under different gas pressures and sputtering power. The SiC sensing material is characterizedmore » through the measurement of current–voltage curves and noise levels. The thermal performance of a fabricated nanocalorimeter is studied in simulation and experiment. The experiment results show the device has excellent thermal isolation to hold thermal energy. As a result, the noise test together with the simulation show the device is promising for micro 10 µK temperature sensitivity and nanowatt resolution which will lead to low-volume ultra-sensitive nanocalorimetry for biological processes, such as protein folding and ligand binding.« less

Temperature Induced Voltage Offset Drifts in Silicon Carbide Pressure Sensors

NASA Technical Reports Server (NTRS)

Okojie, Robert S.; Lukco, Dorothy; Nguyen, Vu; Savrun, Ender

2012-01-01

We report the reduction of transient drifts in the zero pressure offset voltage in silicon carbide (SiC) pressure sensors when operating at 600 C. The previously observed maximum drift of +/- 10 mV of the reference offset voltage at 600 C was reduced to within +/- 5 mV. The offset voltage drifts and bridge resistance changes over time at test temperature are explained in terms of the microstructure and phase changes occurring within the contact metallization, as analyzed by Auger electron spectroscopy and field emission scanning electron microscopy. The results have helped to identify the upper temperature reliable operational limit of this particular metallization scheme to be 605 C.

An Overview of Wide Bandgap Silicon Carbide Sensors and Electronics Development at NASA Glenn Research Center

NASA Technical Reports Server (NTRS)

Hunter, Gary W.; Neudeck, Philip G.; Beheim, Glenn M.; Okojie, Robert S.; Chen, Liangyu; Spry, D.; Trunek, A.

2007-01-01

A brief overview is presented of the sensors and electronics development work ongoing at NASA Glenn Research Center which is intended to meet the needs of future aerospace applications. Three major technology areas are discussed: 1) high temperature SiC electronics, 2) SiC gas sensor technology development, and 3) packaging of harsh environment devices. Highlights of this work include world-record operation of SiC electronic devices including 500?C JFET transistor operation with excellent properties, atomically flat SiC gas sensors integrated with an on-chip temperature detector/heater, and operation of a packaged AC amplifier. A description of the state-of-the-art is given for each topic. It is concluded that significant progress has been made and that given recent advancements the development of high temperature smart sensors is envisioned.

Micro/nano electro mechanical systems for practical applications

NASA Astrophysics Data System (ADS)

Esashi, Masayoshi

2009-09-01

Silicon MEMS as electrostatically levitated rotational gyroscope, 2D optical scanner and wafer level packaged devices as integrated capacitive pressure sensor and MEMS switch are described. MEMS which use non-silicon materials as diamond, PZT, conductive polymer, CNT (carbon nano tube), LTCC with electrical feedthrough, SiC (silicon carbide) and LiNbO3 for multi-probe data storage, multi-column electron beam lithography system, probe card for wafer-level burn-in test, mould for glass press moulding and SAW wireless passive sensor respectively are also described.

Demonstration of a Packaged Capacitive Pressure Sensor System Suitable for Jet Turbofan Engine Health Monitoring

NASA Technical Reports Server (NTRS)

Scardelletti, Maximilian C.; Jordan, Jennifer L.; Meredith, Roger D.; Harsh, Kevin; Pilant, Evan; Usrey, Michael W.; Beheim, Glenn M.; Hunter, Gary W.; Zorman, Christian A.

2016-01-01

In this paper, the development and characterization of a packaged pressure sensor system suitable for jet engine health monitoring is demonstrated. The sensing system operates from 97 to 117 MHz over a pressure range from 0 to 350 psi and a temperature range from 25 to 500 deg. The sensing system consists of a Clapp-type oscillator that is fabricated on an alumina substrate and is comprised of a Cree SiC MESFET, MIM capacitors, a wire-wound inductor, chip resistors and a SiCN capacitive pressure sensor. The pressure sensor is located in the LC tank circuit of the oscillator so that a change in pressure causes a change in capacitance, thus changing the resonant frequency of the sensing system. The chip resistors, wire-wound inductors and MIM capacitors have all been characterized at temperature and operational frequency, and perform with less than 5% variance in electrical performance. The measured capacitive pressure sensing system agrees very well with simulated results. The packaged pressure sensing system is specifically designed to measure the pressure on a jet turbofan engine. The packaged system can be installed by way of borescope plug adaptor fitted to a borescope port exposed to the gas path of a turbofan engine.

Improved Reliability of SiC Pressure Sensors for Long Term High Temperature Applications

NASA Technical Reports Server (NTRS)

Okojie, R. S.; Nguyen, V.; Savrun, E.; Lukco, D.

2011-01-01

We report advancement in the reliability of silicon carbide pressure sensors operating at 600 C for extended periods. The large temporal drifts in zero pressure offset voltage at 600 C observed previously were significantly suppressed to allow improved reliable operation. This improvement was the result of further enhancement of the electrical and mechanical integrity of the bondpad/contact metallization, and the introduction of studded bump bonding on the pad. The stud bump contact promoted strong adhesion between the Au bond pad and the Au die-attach. The changes in the zero offset voltage and bridge resistance over time at temperature were explained by the microstructure and phase changes within the contact metallization, that were analyzed with Auger electron spectroscopy (AES) and field emission scanning electron microscopy (FE-SEM).

CARES/Life Used for Probabilistic Characterization of MEMS Pressure Sensor Membranes

NASA Technical Reports Server (NTRS)

Nemeth, Noel N.

2002-01-01

Microelectromechanical systems (MEMS) devices are typically made from brittle materials such as silicon using traditional semiconductor manufacturing techniques. They can be etched (or micromachined) from larger structures or can be built up with material deposition processes. Maintaining dimensional control and consistent mechanical properties is considerably more difficult for MEMS because feature size is on the micrometer scale. Therefore, the application of probabilistic design methodology becomes necessary for MEMS. This was demonstrated at the NASA Glenn Research Center and Case Western Reserve University in an investigation that used the NASA-developed CARES/Life brittle material design program to study the probabilistic fracture strength behavior of single-crystal SiC, polycrystalline SiC, and amorphous Si3N4 pressurized 1-mm-square thin-film diaphragms. These materials are of interest because of their superior high-temperature characteristics, which are desirable for harsh environment applications such as turbine engine and rocket propulsion system hot sections.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Nabeel A. Riza

The goals of the this part of the Continuation Phase 2 period (Oct. 1, 06 to March 31, 07) of this project were to (a) fabricate laser-doped SiC wafers and start testing the SiC chips for individual gas species sensing under high temperature and pressure conditions and (b) demonstrate the designs and workings of a temperature probe suited for industrial power generation turbine environment. A focus of the reported work done via Kar UCF LAMP lab. is to fabricate the embedded optical phase or doped microstructures based SiC chips, namely, Chromium (C), Boron (B) and Aluminum (Al) doped 4H-SiC, andmore » to eventually deploy such laser-doped chips to enable gas species sensing under high temperature and pressure. Experimental data is provided from SiC chip optical response for various gas species such as pure N2 and mixtures of N2 and H{sub 2}, N{sub 2} and CO, N{sub 2} and CO{sub 2}, and N{sub 2} and CH{sub 4}. Another main focus of the reported work was a temperature sensor probe assembly design and initial testing. The probe transmit-receive fiber optics were designed and tested for electrically controlled alignment. This probe design was provided to overcome mechanical vibrations in typical industrial scenarios. All these goals have been achieved and are described in detail in the report.« less

Bare and boron-doped cubic silicon carbide nanowires for electrochemical detection of nitrite sensitively

PubMed Central

Yang, Tao; Zhang, Liqin; Hou, Xinmei; Chen, Junhong; Chou, Kuo-Chih

2016-01-01

Fabrication of eletrochemical sensors based on wide bandgap compound semiconductors has attracted increasing interest in recent years. Here we report for the first time electrochemical nitrite sensors based on cubic silicon carbide (SiC) nanowires (NWs) with smooth surface and boron-doped cubic SiC NWs with fin-like structure. Multiple techniques including scanning electron microscopy (SEM), transmission electron microscopy (TEM), X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS) and electron energy loss spectroscopy (EELS) were used to characterize SiC and boron-doped SiC NWs. As for the electrochemical behavior of both SiC NWs electrode, the cyclic voltammetric results show that both SiC electrodes exhibit wide potential window and excellent electrocatalytic activity toward nitrite oxidation. Differential pulse voltammetry (DPV) determination reveals that there exists a good linear relationship between the oxidation peak current and the concentration in the range of 50–15000 μmoL L−1 (cubic SiC NWs) and 5–8000 μmoL L−1 (B-doped cubic SiC NWs) with the detection limitation of 5 and 0.5 μmoL L−1 respectively. Compared with previously reported results, both as-prepared nitrite sensors exhibit wider linear response range with comparable high sensitivity, high stability and reproducibility. PMID:27109361

Optimal base station placement for wireless sensor networks with successive interference cancellation.

PubMed

Shi, Lei; Zhang, Jianjun; Shi, Yi; Ding, Xu; Wei, Zhenchun

2015-01-14

We consider the base station placement problem for wireless sensor networks with successive interference cancellation (SIC) to improve throughput. We build a mathematical model for SIC. Although this model cannot be solved directly, it enables us to identify a necessary condition for SIC on distances from sensor nodes to the base station. Based on this relationship, we propose to divide the feasible region of the base station into small pieces and choose a point within each piece for base station placement. The point with the largest throughput is identified as the solution. The complexity of this algorithm is polynomial. Simulation results show that this algorithm can achieve about 25% improvement compared with the case that the base station is placed at the center of the network coverage area when using SIC.

Packaging Technology for SiC High Temperature Electronics

NASA Technical Reports Server (NTRS)

Chen, Liang-Yu; Neudeck, Philip G.; Spry, David J.; Meredith, Roger D.; Nakley, Leah M.; Beheim, Glenn M.; Hunter, Gary W.

2017-01-01

High-temperature environment operable sensors and electronics are required for long-term exploration of Venus and distributed control of next generation aeronautical engines. Various silicon carbide (SiC) high temperature sensors, actuators, and electronics have been demonstrated at and above 500 C. A compatible packaging system is essential for long-term testing and application of high temperature electronics and sensors in relevant environments. This talk will discuss a ceramic packaging system developed for high temperature electronics, and related testing results of SiC integrated circuits at 500 C facilitated by this high temperature packaging system, including the most recent progress.

Decomposition of silicon carbide at high pressures and temperatures

DOE Office of Scientific and Technical Information (OSTI.GOV)

Daviau, Kierstin; Lee, Kanani K. M.

We measure the onset of decomposition of silicon carbide, SiC, to silicon and carbon (e.g., diamond) at high pressures and high temperatures in a laser-heated diamond-anvil cell. We identify decomposition through x-ray diffraction and multiwavelength imaging radiometry coupled with electron microscopy analyses on quenched samples. We find that B3 SiC (also known as 3C or zinc blende SiC) decomposes at high pressures and high temperatures, following a phase boundary with a negative slope. The high-pressure decomposition temperatures measured are considerably lower than those at ambient, with our measurements indicating that SiC begins to decompose at ~ 2000 K at 60more » GPa as compared to ~ 2800 K at ambient pressure. Once B3 SiC transitions to the high-pressure B1 (rocksalt) structure, we no longer observe decomposition, despite heating to temperatures in excess of ~ 3200 K. The temperature of decomposition and the nature of the decomposition phase boundary appear to be strongly influenced by the pressure-induced phase transitions to higher-density structures in SiC, silicon, and carbon. The decomposition of SiC at high pressure and temperature has implications for the stability of naturally forming moissanite on Earth and in carbon-rich exoplanets.« less

Optimal Base Station Placement for Wireless Sensor Networks with Successive Interference Cancellation

PubMed Central

Shi, Lei; Zhang, Jianjun; Shi, Yi; Ding, Xu; Wei, Zhenchun

2015-01-01

We consider the base station placement problem for wireless sensor networks with successive interference cancellation (SIC) to improve throughput. We build a mathematical model for SIC. Although this model cannot be solved directly, it enables us to identify a necessary condition for SIC on distances from sensor nodes to the base station. Based on this relationship, we propose to divide the feasible region of the base station into small pieces and choose a point within each piece for base station placement. The point with the largest throughput is identified as the solution. The complexity of this algorithm is polynomial. Simulation results show that this algorithm can achieve about 25% improvement compared with the case that the base station is placed at the center of the network coverage area when using SIC. PMID:25594600

Fabrication and characterization of 3C-silicon carbide micro sensor for wireless blood pressure measurements

NASA Astrophysics Data System (ADS)

Basak, Nupur

A potentially implantable single crystal 3C-SiC pressure sensor for blood pressure measurement was designed, simulated, fabricated, characterized and optimized. This research uses a single crystal 3C-SiC, for the first time, to demonstrate its application as a blood pressure measurement sensor. The sensor, which uses the epitaxial grown 3C-SiC membrane to measure changes in pressure, is designed to be wireless, biocompatible and linear. The SiC material was chosen for its superior physical, chemical and mechanical properties; the capacitive sensor uses a 3C-SiC membrane as one of the electrodes; and, the sensor system is wireless for comfort and to allow for convenient reading of real-time pressure data (wireless communication is enabled by connecting the sensor parallel to a planar inductor). Together, the variable capacitive sensor and planar inductor create a pressure sensitive resonant circuit. The sensor system described above allows for implantation into a human patient's body, after which the planar inductor can be coupled with an external inductor to receive data for real-time blood pressure measurement. Electroplating, thick photo-resist characterization, RIE etching, oxidation, CVD, chemical mechanical polishing and wafer bonding were optimized during the process of fabricating the sensor system and, in addition to detailing the sensor system simulation and characterization; the optimized processes are detailed in the dissertation. This absolute pressure sensor is designed to function optimally within the human blood pressure range of 50-350mmHg. The layout and modeling of the sensor uses finite element analysis (FEA) software. The simulations for membrane deflection, stress analysis and electro-mechanical analysis are performed for 100 μm2 and 400μm2sensors. The membrane deflection-pressure, capacitance-pressure and resonant frequency-pressure graphs were obtained, and detailed in the dissertation, along with the planar inductor simulation for differently sized inductors. Ultimately, an optimized sensor with a size of 400μm2 was chosen because of its high sensitivity. The sensor, and the planar inductor, which is 3mm 2, is comparable to the presently researched implantable chip size. The measured inductance of the gold electroplated inductor is 0.371μH. The capacitance changes from 0.934 pF to 0.997pF with frequency shift of 248MHz to 256 MHz. The sensitivity of the sensor is found to be 0.21 fF/mmHg or 27.462 kHz/mmHg with an average non-linearity of 0.23216%.

Improved Method of Manufacturing SiC Devices

NASA Technical Reports Server (NTRS)

Okojie, Robert S.

2005-01-01

The phrase, "common-layered architecture for semiconductor silicon carbide" ("CLASSiC") denotes a method of batch fabrication of microelectromechanical and semiconductor devices from bulk silicon carbide. CLASSiC is the latest in a series of related methods developed in recent years in continuing efforts to standardize SiC-fabrication processes. CLASSiC encompasses both institutional and technological innovations that can be exploited separately or in combination to make the manufacture of SiC devices more economical. Examples of such devices are piezoresistive pressure sensors, strain gauges, vibration sensors, and turbulence-intensity sensors for use in harsh environments (e.g., high-temperature, high-pressure, corrosive atmospheres). The institutional innovation is to manufacture devices for different customers (individuals, companies, and/or other entities) simultaneously in the same batch. This innovation is based on utilization of the capability for fabrication, on the same substrate, of multiple SiC devices having different functionalities (see figure). Multiple customers can purchase shares of the area on the same substrate, each customer s share being apportioned according to the customer s production-volume requirement. This makes it possible for multiple customers to share costs in a common foundry, so that the capital equipment cost per customer in the inherently low-volume SiC-product market can be reduced significantly. One of the technological innovations is a five-mask process that is based on an established set of process design rules. The rules provide for standardization of the fabrication process, yet are flexible enough to enable multiple customers to lay out masks for their portions of the SiC substrate to provide for simultaneous batch fabrication of their various devices. In a related prior method, denoted multi-user fabrication in silicon carbide (MUSiC), the fabrication process is based largely on surface micromachining of poly SiC. However, in MUSiC one cannot exploit the superior sensing, thermomechanical, and electrical properties of single-crystal 6H-SiC or 4H-SiC. As a complement to MUSiC, the CLASSiC five-mask process can be utilized to fabricate multiple devices in bulk single-crystal SiC of any polytype. The five-mask process makes fabrication less complex because it eliminates the need for large-area deposition and removal of sacrificial material. Other innovations in CLASSiC pertain to selective etching of indium tin oxide and aluminum in connection with multilayer metallization. One major characteristic of bulk micromachined microelectromechanical devices is the presence of three-dimensional (3D) structures. Any 3D recesses that already exist at a given step in a fabrication process usually make it difficult to apply a planar coat of photoresist for metallization and other subsequent process steps. To overcome this difficulty, the CLASSiC process includes a reversal of part of the conventional flow: Metallization is performed before the recesses are etched.

Melt infiltration of silicon carbide compacts. I - Study of infiltration dynamics

NASA Technical Reports Server (NTRS)

Asthana, Rajiv; Rohatgi, Pradeep K.

1992-01-01

Countergravity, pressure-assisted infiltration with a 2014 Al alloy of suitably tamped porous compacts of platelet shaped single crystals of alpha (hexagonal) silicon carbide was used to measure particulate wettability and infiltration kinetics under dynamic conditions relevant to pressure casting of composites. A threshold pressure P(th) for ingression of the infiltrant was identified based on the experimental penetration length versus pressure profiles for a range of experimental variables which included infiltration pressure, infiltration time, SiC size and SiC surface chemistry. The results showed that P(th) decreased whereas the penetration length increased with increasing SiC size and infiltration time. Cu-coated SiC led to lower P(th) and larger penetration lengths compared to uncoated SiC under identical conditions. These observations have been discussed in the light of theoretical models of infiltration and the kinetics of wetting.

A study of metal-ceramic wettability in SiC-Al using dynamic melt infiltration of SiC

NASA Technical Reports Server (NTRS)

Asthana, R.; Rohatgi, P. K.

1993-01-01

Pressure-assisted infiltration with a 2014 Al alloy of plain and Cu-coated single crystal platelets of alpha silicon carbide was used to study particulate wettability under dynamic conditions relevant to pressure casting of metal-matrix composites. The total penetration length of infiltrant metal in porous compacts was measured at the conclusion of solidification as a function of pressure, infiltration time, and SiC size for both plain and Cu-coated SiC. The experimental data were analyzed to obtain a threshold pressure for the effect of melt intrusion through SiC compacts. The threshold pressure was taken either directly as a measure of wettability or converted to an effective wetting angle using the Young-Laplace capillary equation. Cu coating resulted in partial but beneficial improvements in wettability as a result of its dissolution in the melt, compared to uncoated SiC.

Surface Micromachined Silicon Carbide Accelerometers for Gas Turbine Applications

NASA Technical Reports Server (NTRS)

DeAnna, Russell G.

1998-01-01

A finite-element analysis of possible silicon carbide (SIC) folded-beam, lateral-resonating accelerometers is presented. Results include stiffness coefficients, acceleration sensitivities, resonant frequency versus temperature, and proof-mass displacements due to centripetal acceleration of a blade-mounted sensor. The surface micromachined devices, which are similar to the Analog Devices Inc., (Norwood, MA) air-bag crash detector, are etched from 2-pm thick, 3C-SiC films grown at 1600 K using atmospheric pressure chemical vapor deposition (APCVD). The substrate is a 500 gm-thick, (100) silicon wafer. Polysilicon or silicon dioxide is used as a sacrificial layer. The finite element analysis includes temperature-dependent properties, shape change due to volume expansion, and thermal stress caused by differential thermal expansion of the materials. The finite-element results are compared to experimental results for a SiC device of similar, but not identical, geometry. Along with changes in mechanical design, blade-mounted sensors would require on-chip circuitry to cancel displacements due to centripetal acceleration and improve sensitivity and bandwidth. These findings may result in better accelerometer designs for this application.

Chemical Vapor Deposition Of Silicon Carbide

NASA Technical Reports Server (NTRS)

Powell, J. Anthony; Larkin, David J.; Matus, Lawrence G.; Petit, Jeremy B.

1993-01-01

Large single-crystal SiC boules from which wafers of large area cut now being produced commerically. Availability of wafers opens door for development of SiC semiconductor devices. Recently developed chemical vapor deposition (CVD) process produces thin single-crystal SiC films on SiC wafers. Essential step in sequence of steps used to fabricate semiconductor devices. Further development required for specific devices. Some potential high-temperature applications include sensors and control electronics for advanced turbine engines and automobile engines, power electronics for electromechanical actuators for advanced aircraft and for space power systems, and equipment used in drilling of deep wells. High-frequency applications include communication systems, high-speed computers, and microwave power transistors. High-radiation applications include sensors and controls for nuclear reactors.

Pd/CeO2/SiC Chemical Sensors

NASA Technical Reports Server (NTRS)

Lu, Weijie; Collins, W. Eugene

2005-01-01

The incorporation of nanostructured interfacial layers of CeO2 has been proposed to enhance the performances of Pd/SiC Schottky diodes used to sense hydrogen and hydrocarbons at high temperatures. If successful, this development could prove beneficial in numerous applications in which there are requirements to sense hydrogen and hydrocarbons at high temperatures: examples include monitoring of exhaust gases from engines and detecting fires. Sensitivity and thermal stability are major considerations affecting the development of high-temperature chemical sensors. In the case of a metal/SiC Schottky diode for a number of metals, the SiC becomes more chemically active in the presence of the thin metal film on the SiC surface at high temperature. This increase in chemical reactivity causes changes in chemical composition and structure of the metal/SiC interface. The practical effect of the changes is to alter the electronic and other properties of the device in such a manner as to degrade its performance as a chemical sensor. To delay or prevent these changes, it is necessary to limit operation to a temperature <450 C for these sensor structures. The present proposal to incorporate interfacial CeO2 films is based partly on the observation that nanostructured materials in general have potentially useful electrical properties, including an ability to enhance the transfer of electrons. In particular, nanostructured CeO2, that is CeO2 with nanosized grains, has shown promise for incorporation into hightemperature electronic devices. Nanostructured CeO2 films can be formed on SiC and have been shown to exhibit high thermal stability on SiC, characterized by the ability to withstand temperatures somewhat greater than 700 C for limited times. The exchanges of oxygen between CeO2 and SiC prevent the formation of carbon and other chemical species that are unfavorable for operation of a SiC-based Schottky diode as a chemical sensor. Consequently, it is anticipated that in a Pd/CeO2/SiC Schottky diode, the nanostructured interfacial CeO2 layer would contribute to thermal stability and, by contributing to transfer of electrons, would also contribute to sensitivity.

The Oxidation Rate of SiC in High Pressure Water Vapor Environments

NASA Technical Reports Server (NTRS)

Opila, Elizabeth J.; Robinson, R. Craig

1999-01-01

CVD SiC and sintered alpha-SiC samples were exposed at 1316 C in a high pressure burner rig at total pressures of 5.7, 15, and 25 atm for times up to 100h. Variations in sample emittance for the first nine hours of exposure were used to determine the thickness of the silica scale as a function of time. After accounting for volatility of silica in water vapor, the parabolic rate constants for Sic in water vapor pressures of 0.7, 1.8 and 3.1 atm were determined. The dependence of the parabolic rate constant on the water vapor pressure yielded a power law exponent of one. Silica growth on Sic is therefore limited by transport of molecular water vapor through the silica scale.

500 C Electronic Packaging and Dielectric Materials for High Temperature Applications

NASA Technical Reports Server (NTRS)

Chen, Liang-yu; Neudeck, Philip G.; Spry, David J.; Beheim, Glenn M.; Hunter, Gary W.

2016-01-01

High-temperature environment operable sensors and electronics are required for exploring the inner solar planets and distributed control of next generation aeronautical engines. Various silicon carbide (SiC) high temperature sensors, actuators, and electronics have been demonstrated at and above 500C. A compatible packaging system is essential for long-term testing and application of high temperature electronics and sensors. High temperature passive components are also necessary for high temperature electronic systems. This talk will discuss ceramic packaging systems developed for high temperature electronics, and related testing results of SiC circuits at 500C and silicon-on-insulator (SOI) integrated circuits at temperatures beyond commercial limit facilitated by these high temperature packaging technologies. Dielectric materials for high temperature multilayers capacitors will also be discussed. High-temperature environment operable sensors and electronics are required for probing the inner solar planets and distributed control of next generation aeronautical engines. Various silicon carbide (SiC) high temperature sensors, actuators, and electronics have been demonstrated at and above 500C. A compatible packaging system is essential for long-term testing and eventual applications of high temperature electronics and sensors. High temperature passive components are also necessary for high temperature electronic systems. This talk will discuss ceramic packaging systems developed for high electronics and related testing results of SiC circuits at 500C and silicon-on-insulator (SOI) integrated circuits at temperatures beyond commercial limit facilitated by high temperature packaging technologies. Dielectric materials for high temperature multilayers capacitors will also be discussed.

On the melt infiltration of copper coated silicon carbide with an aluminium alloy

NASA Technical Reports Server (NTRS)

Asthana, R.; Rohatgi, P. K.

1992-01-01

Pressure-assisted infiltration of porous compacts of Cu coated and uncoated single crystals of platelet shaped alpha (hexagonal) SiC was used to study infiltration dynamics and particulate wettability with a 2014 Al alloy. The infiltration lengths were measured for a range of experimental variables which included infiltration pressure, infiltration time, and SiC size. A threshold pressure (P(th)) for flow initiation through compacts was identified from an analysis of infiltration data; P(th) decreased while penetration lengths increased with increasing SiC size (more fundamentally, due to changes in interparticle pore size) and with increasing infiltration times. Cu coated SiC led to lower P(th) and 60-80 percent larger penetration lengths compared to uncoated SiC under identical processing conditions.

High Temperature Pt/Alumina Co-Fired System for 500 C Electronic Packaging Applications

NASA Technical Reports Server (NTRS)

Chen, Liang-Yu; Neudeck, Philip G.; Spry, David J.; Beheim, Glenn M.; Hunter, Gary W.

2015-01-01

Gold thick-film metallization and 96 alumina substrate based prototype packaging system developed for 500C SiC electronics and sensors is briefly reviewed, the needs of improvement are discussed. A high temperature co-fired alumina material system based packaging system composed of 32-pin chip-level package and printed circuit board is discussed for packaging 500C SiC electronics and sensors.

A High Frequency (HF) Inductive Power Transfer Circuit for High Temperature Applications Using SiC Schottky Diodes

NASA Technical Reports Server (NTRS)

Jordan, Jennifer L.; Ponchak, George E.; Spry, David J.; Neudeck, Philip G.

2018-01-01

Wireless sensors placed in high temperature environments, such as aircraft engines, are desirable to reduce the mass and complexity of routing wires. While communication with the sensors is straight forward, providing power wirelessly is still a challenge. This paper introduces an inductive wireless power transfer circuit incorporating SiC Schottky diodes and its operation from room temperature (25 C) to 500 C.

Laser ablation for membrane processing of AlGaN/GaN- and micro structured ferroelectric thin film MEMS and SiC pressure sensors for extreme conditions

NASA Astrophysics Data System (ADS)

Zehetner, J.; Vanko, G.; Dzuba, J.; Ryger, I.; Lalinsky, T.; Benkler, Manuel; Lucki, Michal

2015-05-01

AlGaN/GaN based high electron mobility transistors (HEMTs), Schottky diodes and/or resistors have been presented as sensing devices for mechanical or chemical sensors operating in extreme conditions. In addition we investigate ferroelectric thin films for integration into micro-electro-mechanical-systems (MEMS). Creation of appropriate diaphragms and/or cantilevers out of SiC is necessary for further improvement of sensing properties of such MEMS sensors. For example sensitivity of the AlGaN/GaN based MEMS pressure sensor can be modified by membrane thickness. We demonstrated that a 4H-SiC 80μm thick diaphragms can be fabricated much faster with laser ablation than by electrochemical, photochemical or reactive ion etching (RIE). We were able to verify the feasibility of this process by fabrication of micromechanical membrane structures also in bulk 3C-SiC, borosilicate glass, sapphire and Al2O3 ceramic substrates by femtosecond laser (520nm) ablation. On a 350μm thick 4H-SiC substrate we produced an array of 275μm deep and 1000μm to 3000μm of diameter blind holes without damaging the 2μm AlN layer at the back side. In addition we investigated ferroelectric thin films as they can be deposited and micro-patterned by a direct UV-lithography method after the ablation process for a specific membrane design. The risk to harm or damage the function of thin films was eliminated by that means. Some defects in the ablated membranes are also affected by the polarisation of the laser light. Ripple structures oriented perpendicular to the laser polarisation promote creation of pin holes which would perforate a thin membrane. We developed an ablation technique strongly inhibiting formation of ripples and pin poles.

Wafer-scale epitaxial graphene on SiC for sensing applications

NASA Astrophysics Data System (ADS)

Karlsson, Mikael; Wang, Qin; Zhao, Yichen; Zhao, Wei; Toprak, Muhammet S.; Iakimov, Tihomir; Ali, Amer; Yakimova, Rositza; Syväjärvi, Mikael; Ivanov, Ivan G.

2015-12-01

The epitaxial graphene-on-silicon carbide (SiC-G) has advantages of high quality and large area coverage owing to a natural interface between graphene and SiC substrate with dimension up to 100 mm. It enables cost effective and reliable solutions for bridging the graphene-based sensors/devices from lab to industrial applications and commercialization. In this work, the structural, optical and electrical properties of wafer-scale graphene grown on 2'' 4H semi-insulating (SI) SiC utilizing sublimation process were systemically investigated with focus on evaluation of the graphene's uniformity across the wafer. As proof of concept, two types of glucose sensors based on SiC-G/Nafion/Glucose-oxidase (GOx) and SiC-G/Nafion/Chitosan/GOx were fabricated and their electrochemical properties were characterized by cyclic voltammetry (CV) measurements. In addition, a few similar glucose sensors based on graphene by chemical synthesis using modified Hummer's method were also fabricated for comparison.

Effects of varying oxygen partial pressure on molten silicon-ceramic substrate interactions

NASA Technical Reports Server (NTRS)

Ownby, D. P.; Barsoum, M. W.

1980-01-01

The silicon sessile drop contact angle was measured on hot pressed silicon nitride, silicon nitride coated on hot pressed silicon nitride, silicon carbon coated on graphite, and on Sialon to determine the degree to which silicon wets these substances. The post-sessile drop experiment samples were sectioned and photomicrographs were taken of the silicon-substrate interface to observe the degree of surface dissolution and degradation. Of these materials, silicon did not form a true sessile drop on the SiC on graphite due to infiltration of the silicon through the SiC coating, nor on the Sialon due to the formation of a more-or-less rigid coating on the liquid silicon. The most wetting was obtained on the coated Si3N4 with a value of 42 deg. The oxygen concentrations in a silicon ribbon furnace and in a sessile drop furnace were measured using the protable thoria-yttria solid solution electrolyte oxygen sensor. Oxygen partial pressures of 10 to the minus 7 power atm and 10 to the minus 8 power atm were obtained at the two facilities. These measurements are believed to represent nonequilibrium conditions.

Zinc-blende to rocksalt transition in SiC in a laser-heated diamond-anvil cell

DOE Office of Scientific and Technical Information (OSTI.GOV)

Daviau, Kierstin; Lee, Kanani K. M.

2017-04-18

We explore the stability of the ambient pressure zinc-blende polymorph (B3) structure of silicon carbide (SiC) at high pressures and temperatures where it transforms to the rocksalt (B1) structure. We find that the transition occurs ~40 GPa lower than previously measured when heated to moderately high temperatures. A lower transition pressure is consistent with the transition pressures predicted in numerous ab initio computations. We find a large volume decrease across the transition of ~17%, with the volume drop increasing at higher formation pressures, suggesting this transition is volume driven yielding a nearly pressure-independent Clapeyron slope. Such a dramatic density increasemore » occurring at pressure is important to consider in applications where SiC is exposed to extreme conditions, such as in industrial applications or planetary interiors.« less

A silicon carbide nanowire field effect transistor for DNA detection

NASA Astrophysics Data System (ADS)

Fradetal, L.; Bano, E.; Attolini, G.; Rossi, F.; Stambouli, V.

2016-06-01

This work reports on the label-free electrical detection of DNA molecules for the first time, using silicon carbide (SiC) as a novel material for the realization of nanowire field effect transistors (NWFETs). SiC is a promising semiconductor for this application due to its specific characteristics such as chemical inertness and biocompatibility. Non-intentionally n-doped SiC NWs are first grown using a bottom-up vapor-liquid-solid (VLS) mechanism, leading to the NWs exhibiting needle-shaped morphology, with a length of approximately 2 μm and a diameter ranging from 25 to 60 nm. Then, the SiC NWFETs are fabricated and functionalized with DNA molecule probes via covalent coupling using an amino-terminated organosilane. The drain current versus drain voltage (I d-V d) characteristics obtained after the DNA grafting and hybridization are reported from the comparative and simultaneous measurements carried out on the SiC NWFETs, used either as sensors or references. As a representative result, the current of the sensor is lowered by 22% after probe DNA grafting and by 7% after target DNA hybridization, while the current of the reference does not vary by more than ±0.6%. The current decrease confirms the field effect induced by the negative charges of the DNA molecules. Moreover, the selectivity, reproducibility, reversibility and stability of the studied devices are emphasized by de-hybridization, non-complementary hybridization and re-hybridization experiments. This first proof of concept opens the way for future developments using SiC-NW-based sensors.

Measured Attenuation of Coplanar Waveguide on 6H, p-type SiC and High Purity Semi-Insulating 4H SiC through 800 K

NASA Technical Reports Server (NTRS)

Ponchak, George E.; Schwartz, Zachary D.; Alterovitz, Samuel A.; Downey, Alan N.

2004-01-01

Wireless sensors for high temperature applications such as oil drilling and mining, automobiles, and jet engine performance monitoring require circuits built on wide bandgap semiconductors. In this paper, the characteristics of microwave transmission lines on 4H-High Purity Semi-Insulating SiC and 6H, p-type SiC is presented as a function of temperature and frequency. It is shown that the attenuation of 6H, p-type substrates is too high for microwave circuits, large leakage current will flow through the substrate, and that unusual attenuation characteristics are due to trapping in the SiC. The 4H-HPSI SiC is shown to have low attenuation and leakage currents over the entire temperature range.

A Silicon Carbide Wireless Temperature Sensing System for High Temperature Applications

PubMed Central

Yang, Jie

2013-01-01

In this article, an extreme environment-capable temperature sensing system based on state-of-art silicon carbide (SiC) wireless electronics is presented. In conjunction with a Pt-Pb thermocouple, the SiC wireless sensor suite is operable at 450 °C while under centrifugal load greater than 1,000 g. This SiC wireless temperature sensing system is designed to be non-intrusively embedded inside the gas turbine generators, acquiring the temperature information of critical components such as turbine blades, and wirelessly transmitting the information to the receiver located outside the turbine engine. A prototype system was developed and verified up to 450 °C through high temperature lab testing. The combination of the extreme temperature SiC wireless telemetry technology and integrated harsh environment sensors will allow for condition-based in-situ maintenance of power generators and aircraft turbines in field operation, and can be applied in many other industries requiring extreme environment monitoring and maintenance. PMID:23377189

Optimization of Thermal Neutron Converter in SiC Sensors for Spectral Radiation Measurements

DOE Office of Scientific and Technical Information (OSTI.GOV)

Krolikowski, Igor; Cetnar, Jerzy; Issa, Fatima

2015-07-01

Optimization of the neutron converter in SiC sensors is presented. The sensors are used for spectral radiation measurements of thermal and fast neutrons and optionally gamma ray at elevated temperature in harsh radiation environment. The neutron converter, which is based on 10B, allows to detect thermal neutrons by means of neutron capture reaction. Two construction of the sensors were used to measure radiation in experiments. Sensor responses collected in experiments have been reproduced by the computer tool created by authors, it allows to validate the tool. The tool creates the response matrix function describing the characteristic of the sensors andmore » it was used for detailed analyses of the sensor responses. Obtained results help to optimize the neutron converter in order to increase thermal neutron detection. Several enhanced construction of the sensors, which includes the neutron converter based on {sup 10}B or {sup 6}Li, were proposed. (authors)« less

Nanocrystalline SiC film thermistors for cryogenic applications

NASA Astrophysics Data System (ADS)

Mitin, V. F.; Kholevchuk, V. V.; Semenov, A. V.; Kozlovskii, A. A.; Boltovets, N. S.; Krivutsa, V. A.; Slepova, A. S.; Novitskii, S. V.

2018-02-01

We developed a heat-sensitive material based on nanocrystalline SiC films obtained by direct deposition of carbon and silicon ions onto sapphire substrates. These SiC films can be used for resistance thermometers operating in the 2 K-300 K temperature range. Having high heat sensitivity, they are relatively low sensitive to the magnetic field. The designs of the sensors are presented together with a discussion of their thermometric characteristics and sensitivity to magnetic fields.

Durability Evaluation of a Thin Film Sensor System With Enhanced Lead Wire Attachments on SiC/SiC Ceramic Matrix Composites

NASA Technical Reports Server (NTRS)

Lei, Jih-Fen; Kiser, J. Douglas; Singh, Mrityunjay; Cuy, Mike; Blaha, Charles A.; Androjna, Drago

2000-01-01

An advanced thin film sensor system instrumented on silicon carbide (SiC) fiber reinforced SiC matrix ceramic matrix composites (SiC/SiC CMCs), was evaluated in a Mach 0.3 burner rig in order to determine its durability to monitor material/component surface temperature in harsh environments. The sensor system included thermocouples in a thin film form (5 microns thick), fine lead wires (75 microns diameter), and the bonds between these wires and the thin films. Other critical components of the overall system were the heavy, swaged lead wire cable (500 microns diameter) that contained the fine lead wires and was connected to the temperature readout, and ceramic attachments which were bonded onto the CMCs for the purpose of securing the lead wire cables, The newly developed ceramic attachment features a combination of hoops made of monolithic SiC or SiC/SiC CMC (which are joined to the test article) and high temperature ceramic cement. Two instrumented CMC panels were tested in a burner rig for a total of 40 cycles to 1150 C (2100 F). A cycle consisted of rapid heating to 1150 C (2100 F), a 5 minute hold at 1150 C (2100 F), and then cooling down to room temperature in 2 minutes. The thin film sensor systems provided repeatable temperature measurements for a maximum of 25 thermal cycles. Two of the monolithic SiC hoops debonded during the sensor fabrication process and two of the SiC/SiC CMC hoops failed during testing. The hoops filled with ceramic cement, however, showed no sign of detachment after 40 thermal cycle test. The primary failure mechanism of this sensor system was the loss of the fine lead wire-to-thin film connection, which either due to detachment of the fine lead wires from the thin film thermocouples or breakage of the fine wire.

Conformal Thin Film Packaging for SiC Sensor Circuits in Harsh Environments

NASA Technical Reports Server (NTRS)

Scardelletti, Maximilian C.; Karnick, David A.; Ponchak, George E.; Zorman, Christian A.

2011-01-01

In this investigation sputtered silicon carbide annealed at 300 C for one hour is used as a conformal thin film package. A RF magnetron sputterer was used to deposit 500 nm silicon carbide films on gold metal structures on alumina wafers. To determine the reliability and resistance to immersion in harsh environments, samples were submerged in gold etchant for 24 hours, in BOE for 24 hours, and in an O2 plasma etch for one hour. The adhesion strength of the thin film was measured by a pull test before and after the chemical immersion, which indicated that the film has an adhesion strength better than 10(exp 8) N/m2; this is similar to the adhesion of the gold layer to the alumina wafer. MIM capacitors are used to determine the dielectric constant, which is dependent on the SiC anneal temperature. Finally, to demonstrate that the SiC, conformal, thin film may be used to package RF circuits and sensors, an LC resonator circuit was fabricated and tested with and without the conformal SiC thin film packaging. The results indicate that the SiC coating adds no appreciable degradation to the circuits RF performance. Index Terms Sputter, silicon carbide, MIM capacitors, LC resonators, gold etchants, BOE, O2 plasma

Planar SiC MEMS flame ionization sensor for in-engine monitoring

NASA Astrophysics Data System (ADS)

Rolfe, D. A.; Wodin-Schwartz, S.; Alonso, R.; Pisano, A. P.

2013-12-01

A novel planar silicon carbide (SiC) MEMS flame ionization sensor was developed, fabricated and tested to measure the presence of a flame from the surface of an engine or other cooled surface while withstanding the high temperature and soot of a combustion environment. Silicon carbide, a ceramic semiconductor, was chosen as the sensor material because it has low surface energy and excellent mechanical and electrical properties at high temperatures. The sensor measures the conductivity of scattered charge carriers in the flame's quenching layer. This allows for flame detection, even when the sensor is situated several millimetres from the flame region. The sensor has been shown to detect the ionization of premixed methane and butane flames in a wide temperature range starting from room temperature. The sensors can measure both the flame chemi-ionization and the deposition of water vapour on the sensor surface. The width and speed of a premixed methane laminar flame front were measured with a series of two sensors fabricated on a single die. This research points to the feasibility of using either single sensors or arrays in internal combustion engine cylinders to optimize engine performance, or for using sensors to monitor flame stability in gas turbine applications.

Hydrogen gas sensors using a thin Ta2O5 dielectric film

NASA Astrophysics Data System (ADS)

Kim, Seongjeen

2014-12-01

A capacitive-type hydrogen gas sensor with a MIS (metal-insulator-semiconductor) structure was investigated for high-temperature applications. In this work, a tantalum oxide (Ta2O5) layer of tens of nanometers in thickness formed by oxidizing tantalum film in rapid thermal processing (RTP) was exploited with the purpose of sensitivity improvement. Silicon carbide (SiC), which is good even at high temperatures over 500 °C, was used as the substrate. We fabricated sensors composed of Pd/Ta2O5/SiC, and the dependences of the capacitance response properties and the I-V characteristics on the hydrogen concentration were analyzed from the temperature range of room temperature to 500 °C. As a result, our hydrogen sensor showed promising performance with respect to the sensitivity and the adaptability at high temperature.

Final Technical Report - 300°C Capable Electronics Platform and Temperature Sensor System For Enhanced Geothermal Systems

DOE Office of Scientific and Technical Information (OSTI.GOV)

Chen, Cheng-Po; Shaddock, David; Sandvik, Peter

2012-11-30

A silicon carbide (SiC) based electronic temperature sensor prototype has been demonstrated to operate at 300°C. We showed continuous operation of 1,000 hours with SiC operational amplifier and surface mounted discreet resistors and capacitors on a ceramic circuit board. This feasibility demonstration is a major milestone in the development of high temperature electronics in general and high temperature geothermal exploration and well management tools in particular. SiC technology offers technical advantages that are not found in competing technologies such as silicon-on-insulator (SOI) at high temperatures of 200°C to 300°C and beyond. The SiC integrated circuits and packaging methods can bemore » used in new product introduction by GE Oil and Gas for high temperature down-hole tools. The existing SiC fabrication facility at GE is sufficient to support the quantities currently demanded by the marketplace, and there are other entities in the United States and other countries capable of ramping up SiC technology manufacturing. The ceramic circuit boards are different from traditional organic-based electronics circuit boards, but the fabrication process is compatible with existing ceramic substrate manufacturing. This project has brought high temperature electronics forward, and brings us closer to commercializing tools that will enable and reduce the cost of enhanced geothermal technology to benefit the public in terms of providing clean renewable energy at lower costs.« less

The Paralinear Oxidation of SiC in Combustion Environments

NASA Technical Reports Server (NTRS)

Opila, Elizabeth J.; Greenbauer-Seng, Leslie (Technical Monitor)

2000-01-01

SiC is proposed for structural applications in high pressure, high temperature. high gas velocity environments of turbine and rocket engines. These environments are typically composed of complex gas mixtures containing carbon dioxide, oxygen, water vapor, and nitrogen. It is known that the primary oxidant for SiC in these environments is water vapor.

Surface Control of Actuated Hybrid Space Mirrors

DTIC Science & Technology

2010-10-01

precision Nanolaminate foil facesheet and Silicon Carbide ( SiC ) substrate embedded with electroactive ceramic actuators. Wavefront sensors are used to...integrate precision Nanolaminate foil facesheet with Silicon Carbide ( SiC ) substrate equipped with embedded electroactive ceramic actuators...IAC-10.C2.5.8 SURFACE CONTROL OF ACTUATED HYBRID SPACE MIRRORS Brij. N. Agrawal Naval Postgraduate School, Monterey, CA, 93943, agrawal

Catalytic-Metal/PdO(sub x)/SiC Schottky-Diode Gas Sensors

NASA Technical Reports Server (NTRS)

Hunter, Gary W.; Xu, Jennifer C.; Lukco, Dorothy

2006-01-01

Miniaturized hydrogen- and hydrocarbon-gas sensors, heretofore often consisting of Schottky diodes based on catalytic metal in contact with SiC, can be improved by incorporating palladium oxide (PdOx, where 0 less than or equal to x less than or equal to 1) between the catalytic metal and the SiC. In prior such sensors in which the catalytic metal was the alloy PdCr, diffusion and the consequent formation of oxides and silicides of Pd and Cr during operation at high temperature were observed to cause loss of sensitivity. However, it was also observed that any PdOx layers that formed and remained at PdCr/SiC interfaces acted as barriers to diffusion, preventing further deterioration by preventing the subsequent formation of metal silicides. In the present improvement, the lesson learned from these observations is applied by placing PdOx at the catalytic metal/SiC interfaces in a controlled and uniform manner to form stable diffusion barriers that prevent formation of metal silicides. A major advantage of PdOx over other candidate diffusion-barrier materials is that PdOx is a highly stable oxide that can be incorporated into gas sensor structures by use of deposition techniques that are standard in the semiconductor industry. The PdOx layer can be used in a gas sensor structure for improved sensor stability, while maintaining sensitivity. For example, in proof-of-concept experiments, Pt/PdOx/SiC Schottky-diode gas sensors were fabricated and tested. The fabrication process included controlled sputter deposition of PdOx to a thickness of 50 Angstroms on a 400-m-thick SiC substrate, followed by deposition of Pt to a thickness of 450 Angstroms on the PdOx. The SiC substrate (400 microns in thickness) was patterned with photoresist and a Schottky-diode photomask. A lift-off process completed the definition of the Schottky-diode pattern. The sensors were tested by measuring changes in forward currents at a bias potential of 1 V during exposure to H2 in N2 at temperatures ranging from 450 to 600 C for more than 750 hours. The sensors were found to be stable after a break-in time of nearly 200 hours. The sensors exhibited high sensitivity: sensor currents changed by factors ranging from 300 to 800 when the gas was changed from pure N2 to 0.5 percent H2 in N2.

A 1 GHz Oscillator-Type Active Antenna

NASA Technical Reports Server (NTRS)

Jordan, Jennifer L.; Scardelletti, Maximilian; Ponchak, George E.

2008-01-01

Wireless sensors are desired for monitoring aircraft engines, automotive engines, industrial machinery, and many other applications. The most important requirement of sensors is that they do not interfere with the environment that they are monitoring. Therefore, wireless sensors must be small, which demands a high level of integration. Sensors that modulate an oscillator active antenna have advantages of small size, high level of integration, and lower packaging cost. Several types of oscillator active antennas have been reported. Ip et al. demonstrated a CPW line fed patch antenna with a feedback loop [1]. No degradation in performance was noticed without a ground plane. A GaAs FET was used in an amplifier/oscillator-based active antenna [2]. An oscillator based on a Cree SiC transistor was designed and characterized in [3]. This paper reports the integration of the SiC Clapp oscillator to a slotline loop antenna.

A Microstructural Comparison of the Initial Growth of AIN and GaN Layers on Basal Plane Sapphire and SiC Substrates by Low Pressure Metalorganic Chemical Vapor Depositon

NASA Technical Reports Server (NTRS)

George, T.; Pike, W. T.; Khan, M. A.; Kuznia, J. N.; Chang-Chien, P.

1994-01-01

The initial growth by low pressure metalorganic chemical vapor deposition and subsequent thermal annealing of AIN and GaN epitaxial layers on SiC and sapphire substrates is examined using high resolution transmission electron microscopy and atomic force microscopy.

Development of High Temperature SiC Based Hydrogen/Hydrocarbon Sensors with Bond Pads for Packaging

NASA Technical Reports Server (NTRS)

Xu, Jennifer C.; Hunter, Gary W.; Chen, Liangyu; Biagi-Labiosa, Azlin M.; Ward, Benjamin J.; Lukco, Dorothy; Gonzalez, Jose M., III; Lampard, Peter S.; Artale, Michael A.; Hampton, Christopher L.

2011-01-01

This paper describes efforts towards the transition of existing high temperature hydrogen and hydrocarbon Schottky diode sensor elements to packaged sensor structures that can be integrated into a testing system. Sensor modifications and the technical challenges involved are discussed. Testing of the sensors at 500 C or above is also presented along with plans for future development.

Theoretical study of band gap in CuAlO2: Pressure dependence and self-interaction correction

NASA Astrophysics Data System (ADS)

Nakanishi, Akitaka; Katayama-Yoshida, Hiroshi

2012-08-01

By using first-principles calculations, we studied the energy gaps of delafossite CuAlO2: (1) pressure dependence and (2) self-interaction correction (SIC). Our simulation shows that CuAlO2 transforms from a delafossite structure to a leaning delafossite structure at 60 GPa. The energy gap of CuAlO2 increases through the structural transition due to the enhanced covalency of Cu 3d and O 2p states. We implemented a self-interaction correction (SIC) into first-principles calculation code to go beyond local density approximation and applied it to CuAlO2. The energy gap calculated within the SIC is close to experimental data while one calculated without the SIC is about 1 eV smaller than the experimental data.

Shock-activated reaction synthesis and high pressure response of titanium-based ternary carbide and nitride ceramics

NASA Astrophysics Data System (ADS)

Jordan, Jennifer Lynn

The objectives of this study were to (a) investigate the effect of shock activation of precursor powders for solid-state reaction synthesis of Ti-based ternary ceramics and (b) to determine the high pressure phase stability and Hugoniot properties of Ti3SiC2. Dynamically densified compacts of Ti, SiC, and graphite precursor powders and Ti and AlN precursor powders were used to study the shock-activated formation of Ti 3SiC2 and Ti2AlN ternary compounds, respectively, which are considered to be novel ceramics having high stiffness but low hardness. Gas gun and explosive loading techniques were used to obtain a range of loading conditions resulting in densification and activation. Measurements of fraction reacted as a function of time and temperature and activation energies obtained from DTA experiments were used to determine the degree of activation caused by shock compression and its subsequent effect on the reaction mechanisms and kinetics. In both systems, shock activation led to an accelerated rate of reaction at temperatures less than 1600°C and, above that temperature, it promoted the formation of almost 100% of the ternary compound. A kinetics-based mathematical model based on mass and thermal transport was developed to predict the effect of shock activation and reaction synthesis conditions that ensure formation of the ternary compounds. Model predictions revealed a transition temperature above which the reaction is taken over by the "run-away" combustion-type mode. The high pressure phase stability of pre-alloyed Ti 3SiC2 compound was investigated by performing Hugoniot shock and particle velocity measurements using the facilities at the National Institute for Materials Science (Tsukuba, Japan). Experiments performed at pressures of 95--120 GPa showed that the compressibility of Ti3SiC 2 at these pressures deviates from the previously reported compressibility of the material under static high pressure loading. The deviation in compressibility behavior is indicative of the transformation of the Ti3 SiC2 ceramic to a high pressure, high density phase.

"Un-annealed and Annealed Pd Ultra-Thin Film on SiC Characterized by Scanning Probe Microscopy and X-ray Photoelectron Spectroscopy"

NASA Technical Reports Server (NTRS)

Lu, W. J.; Shi, D. T.; Elshot, K.; Bryant, E.; Lafate, K.; Chen, H.; Burger, A.; Collins, W. E.

1998-01-01

Pd/SiC has been used as a hydrogen and a hydrocarbon gas sensor operated at high temperature. UHV (Ultra High Vacuum)-Scanning Tunneling Microscopy (STM), Atomic Force Microscopy (AFM) and X-ray Photoelectron Spectroscopy (XPS) techniques were applied to study the relationship between the morphology and chemical compositions for Pd ultra-thin films on SiC (less than 30 angstroms) at different annealing temperatures. Pd ultra-thin film on 6H-SiC was prepared by the RF sputtering method. The morphology from UHV-STM and AFM shows that the Pd thin film was well deposited on SiC substrate, and the Pd was partially aggregated to round shaped participates at an annealing temperature of 300 C. At 400 C, the amount of surface participates decreases, and some strap shape participates appear. From XPS, Pd2Si was formed on the surface after annealing at 300 C, and all Pd reacted with SiC to form Pd2Si after annealing at 400 C. The intensity of the XPS Pd peak decreases enormously at 400 C. The Pd film diffused into SiC, and the Schottky barrier height has almost no changes. The work shows the Pd sicilides/SiC have the same electronic properties with Pd/SiC, and explains why the Pd/SiC sensor still responds to hydrogen at high operating temperatures.

AIN-Based Packaging for SiC High-Temperature Electronics

NASA Technical Reports Server (NTRS)

Savrun, Ender

2004-01-01

Packaging made primarily of aluminum nitride has been developed to enclose silicon carbide-based integrated circuits (ICs), including circuits containing SiC-based power diodes, that are capable of operation under conditions more severe than can be withstood by silicon-based integrated circuits. A major objective of this development was to enable packaged SiC electronic circuits to operate continuously at temperatures up to 500 C. AlN-packaged SiC electronic circuits have commercial potential for incorporation into high-power electronic equipment and into sensors that must withstand high temperatures and/or high pressures in diverse applications that include exploration in outer space, well logging, and monitoring of nuclear power systems. This packaging embodies concepts drawn from flip-chip packaging of silicon-based integrated circuits. One or more SiC-based circuit chips are mounted on an aluminum nitride package substrate or sandwiched between two such substrates. Intimate electrical connections between metal conductors on the chip(s) and the metal conductors on external circuits are made by direct bonding to interconnections on the package substrate(s) and/or by use of holes through the package substrate(s). This approach eliminates the need for wire bonds, which have been the most vulnerable links in conventional electronic circuitry in hostile environments. Moreover, the elimination of wire bonds makes it possible to pack chips more densely than was previously possible.

Oxidation of C/SiC Composites at Reduced Oxygen Partial Pressures

NASA Technical Reports Server (NTRS)

Opila, E. J.; Serra, J. L.

2007-01-01

T-300 carbon fibers and T-300 carbon fiber reinforced silicon carbide composites (C/SiC) were oxidized in flowing reduced oxygen partial pressure environments at a total pressure of one atmosphere (0.5 atm O2, 0.05 atm O2 and 0.005 atm O2, balance argon). Experiments were conducted at four temperatures (816deg, 1149deg, 1343deg, and 1538 C). The oxidation kinetics were monitored using thermogravimetric analysis. T-300 fibers were oxidized to completion for times between 0.6 and 90 h. Results indicated that fiber oxidation kinetics were gas phase diffusion controlled. Oxidation rates had an oxygen partial pressure dependence with a power law exponent close to one. In addition, oxidation rates were only weakly dependent on temperature. The C/SiC coupon oxidation kinetics showed some variability, attributed to differences in the number and width of cracks in the SiC seal coat. In general, weight losses were observed indicating oxidation of the carbon fibers dominated the oxidation behavior. Low temperatures and high oxygen pressures resulted in the most rapid consumption of the carbon fibers. At higher temperatures, the lower oxidation rates were primarily attributed to crack closure due to SiC thermal expansion, rather than oxidation of SiC since these reduced rates were observed even at the lowest oxygen partial pressures where SiC oxidation is minimal.

Multi-functional micro electromechanical devices and method of bulk manufacturing same

NASA Technical Reports Server (NTRS)

Okojie, Robert S. (Inventor)

2004-01-01

A method of bulk manufacturing SiC sensors is disclosed and claimed. Materials other than SiC may be used as the substrate material. Sensors requiring that the SiC substrate be pierced are also disclosed and claimed. A process flow reversal is employed whereby the metallization is applied first before the recesses are etched into or through the wafer. Aluminum is deposited on the entire planar surface of the metallization. Photoresist is spun onto the substantially planar surface of the Aluminum which is subsequently masked (and developed and removed). Unwanted Aluminum is etched with aqueous TMAH and subsequently the metallization is dry etched. Photoresist is spun onto the still substantially planar surface of Aluminum and oxide and then masked (and developed and removed) leaving the unimidized photoresist behind. Next, ITO is applied over the still substantially planar surface of Aluminum, oxide and unimidized photoresist. Unimidized and exposed photoresist and ITO directly above it are removed with Acetone. Next, deep reactive ion etching attacks exposed oxide not protected by ITO. Finally, hot phosphoric acid removes the Al and ITO enabling wires to connect with the metallization. The back side of the SiC wafer may be also be etched.

New Deep Reactive Ion Etching Process Developed for the Microfabrication of Silicon Carbide

NASA Technical Reports Server (NTRS)

Evans, Laura J.; Beheim, Glenn M.

2005-01-01

Silicon carbide (SiC) is a promising material for harsh environment sensors and electronics because it can enable such devices to withstand high temperatures and corrosive environments. Microfabrication techniques have been studied extensively in an effort to obtain the same flexibility of machining SiC that is possible for the fabrication of silicon devices. Bulk micromachining using deep reactive ion etching (DRIE) is attractive because it allows the fabrication of microstructures with high aspect ratios (etch depth divided by lateral feature size) in single-crystal or polycrystalline wafers. Previously, the Sensors and Electronics Branch of the NASA Glenn Research Center developed a DRIE process for SiC using the etchant gases sulfur hexafluoride (SF6) and argon (Ar). This process provides an adequate etch rate of 0.2 m/min and yields a smooth surface at the etch bottom. However, the etch sidewalls are rougher than desired, as shown in the preceding photomicrograph. Furthermore, the resulting structures have sides that slope inwards, rather than being precisely vertical. A new DRIE process for SiC was developed at Glenn that produces smooth, vertical sidewalls, while maintaining an adequately high etch rate.

MEMS Applications in Aerodynamic Measurement Technology

NASA Technical Reports Server (NTRS)

Reshotko, E.; Mehregany, M.; Bang, C.

1998-01-01

Microelectromechanical systems (MEMS) embodies the integration of sensors, actuators, and electronics on a single substrate using integrated circuit fabrication techniques and compatible bulk and surface micromachining processes. Silicon and its derivatives form the material base for the MEMS technology. MEMS devices, including microsensors and microactuators, are attractive because they can be made small (characteristic dimension about 100 microns), be produced in large numbers with uniform performance, include electronics for high performance and sophisticated functionality, and be inexpensive. For aerodynamic measurements, it is preferred that sensors be small so as to approximate measurement at a point, and in fact, MEMS pressure sensors, wall shear-stress sensors, heat flux sensors and micromachined hot wires are nearing application. For the envisioned application to wind tunnel models, MEMS sensors can be placed on the surface or in very shallow grooves. MEMS devices have often been fabricated on stiff, flat silicon substrates, about 0.5 mm thick, and therefore were not easily mounted on curved surfaces. However, flexible substrates are now available and heat-flux sensor arrays have been wrapped around a curved turbine blade. Electrical leads can also be built into the flexible substrate. Thus MEMS instrumented wind tunnel models do not require deep spanwise grooves for tubes and leads that compromise the strength of conventionally instrumented models. With MEMS, even the electrical leads can potentially be eliminated if telemetry of the signals to an appropriate receiver can be implemented. While semiconductor silicon is well known for its electronic properties, it is also an excellent mechanical material for MEMS applications. However, silicon electronics are limited to operations below about 200 C, and silicon's mechanical properties start to diminish above 400 C. In recent years, silicon carbide (SiC) has emerged as the leading material candidate for applications in high temperature environments and can be used for high-temperature MEMS applications. With SiC, diodes and more complex electronics have been shown to operate to about 600 C, while the mechanical properties of SiC are maintained to much higher temperatures. Even when MEMS devices show benefits in the laboratory, there are many packaging challenges for any aeronautics application. Incorporating MEMS into these applications requires new approaches to packaging that goes beyond traditional integrated circuit (IC) packaging technologies. MEMS must interact mechanically, as well as electrically with their environment, making most traditional chip packaging and mounting techniques inadequate. Wind tunnels operate over wide temperature ranges in an environment that is far from being a 'clean-room.' In flight, aircraft are exposed to natural elements (e.g. rain, sun, ice, insects and dirt) and operational interferences(e.g. cleaning and deicing fluids, and maintenance crews). In propulsion systems applications, MEMS devices will have to operate in environments containing gases with very high temperatures, abrasive particles and combustion products. Hence deployment and packaging that maintains the integrity of the MEMS system is crucial. This paper presents an overview of MEMS fabrication and materials, descriptions of available sensors with more details on those being developed in our laboratories, and a discussion of sensor deployment options for wind tunnel and flight applications.

Extreme-Environment Silicon-Carbide (SiC) Wireless Sensor Suite

NASA Technical Reports Server (NTRS)

Yang, Jie

2015-01-01

Phase II objectives: Develop an integrated silicon-carbide wireless sensor suite capable of in situ measurements of critical characteristics of NTP engine; Compose silicon-carbide wireless sensor suite of: Extreme-environment sensors center, Dedicated high-temperature (450 deg C) silicon-carbide electronics that provide power and signal conditioning capabilities as well as radio frequency modulation and wireless data transmission capabilities center, An onboard energy harvesting system as a power source.

Ultra-reducing conditions in average mantle peridotites and in podiform chromitites: a thermodynamic model for moissanite (SiC) formation

NASA Astrophysics Data System (ADS)

Golubkova, Anastasia; Schmidt, Max W.; Connolly, James A. D.

2016-05-01

Natural moissanite (SiC) is reported from mantle-derived samples ranging from lithospheric mantle keel diamonds to serpentinites to podiform chromitites in ophiolites related to suprasubduction zone settings (Luobusa, Dongqiao, Semail, and Ray-Iz). To simulate ultra-reducing conditions and the formation of moissanite, we compiled thermodynamic data for alloys (Fe-Si-C and Fe-Cr), carbides (Fe3C, Fe7C3, SiC), and Fe-silicides; these data were augmented by commonly used thermodynamic data for silicates and oxides. Computed phase diagram sections then constrain the P- T- fO2 conditions of SiC stability in the upper mantle. Our results demonstrate that: Moissanite only occurs at oxygen fugacities 6.5-7.5 log units below the iron-wustite buffer; moissanite and chromite cannot stably coexist; increasing pressure does not lead to the stability of this mineral pair; and silicates that coexist with moissanite have X Mg > 0.99. At upper mantle conditions, chromite reduces to Fe-Cr alloy at fO2 values 3.7-5.3 log units above the moissanite-olivine-(ortho)pyroxene-carbon (graphite or diamond) buffer (MOOC). The occurrence of SiC in chromitites and the absence of domains with almost Fe-free silicates suggest that ultra-reducing conditions allowing for SiC are confined to grain scale microenvironments. In contrast to previous ultra-high-pressure and/or temperature hypotheses for SiC origin, we postulate a low to moderate temperature mechanism, which operates via ultra-reducing fluids. In this model, graphite-/diamond-saturated moderately reducing fluids evolve in chemical isolation from the bulk rock to ultra-reducing methane-dominated fluids by sequestering H2O into hydrous phases (serpentine, brucite, phase A). Carbon isotope compositions of moissanite are consistent with an origin of such fluids from sediments originally rich in organic compounds. Findings of SiC within rocks mostly comprised by hydrous phases (serpentine + brucite) support this model. Both the hydrous phases and the limited diffusive equilibration of SiC with most minerals in the rocks indicate temperatures below 700-800 °C. Moissanite from mantle environments is hence a mineral that does not inform on pressure but on a low to moderate temperature environment involving ultra-reduced fluids. Any mineral in equilibrium with SiC could only contain traces of Fe2+ or Cr3+.

Silicon Carbide High-Temperature Power Rectifiers Fabricated and Characterized

NASA Technical Reports Server (NTRS)

1996-01-01

The High Temperature Integrated Electronics and Sensors (HTIES) team at the NASA Lewis Research Center is developing silicon carbide (SiC) for use in harsh conditions where silicon, the semiconductor used in nearly all of today's electronics, cannot function. Silicon carbide's demonstrated ability to function under extreme high-temperature, high power, and/or high-radiation conditions will enable significant improvements to a far ranging variety of applications and systems. These improvements range from improved high-voltage switching for energy savings in public electric power distribution and electric vehicles, to more powerful microwave electronics for radar and cellular communications, to sensors and controls for cleaner-burning, more fuel-efficient jet aircraft and automobile engines. In the case of jet engines, uncooled operation of 300 to 600 C SiC power actuator electronics mounted in key high-temperature areas would greatly enhance system performance and reliability. Because silicon cannot function at these elevated temperatures, the semiconductor device circuit components must be made of SiC. Lewis' HTIES group recently fabricated and characterized high-temperature SiC rectifier diodes whose record-breaking characteristics represent significant progress toward the realization of advanced high-temperature actuator control circuits. The first figure illustrates the 600 C probe-testing of a Lewis SiC pn-junction rectifier diode sitting on top of a glowing red-hot heating element. The second figure shows the current-versus voltage rectifying characteristics recorded at 600 C. At this high temperature, the diodes were able to "turn-on" to conduct 4 A of current when forward biased, and yet block the flow of current ($quot;turn-off") when reverse biases as high as 150 V were applied. This device represents a new record for semiconductor device operation, in that no previous semiconductor electronic device has ever simultaneously demonstrated 600 C functionality, and 4-A turn-on and 150-V rectification. The high operating current was achieved despite severe device size limitations imposed by present-day SiC wafer defect densities. Further substantial increases in device performance can be expected when SiC wafer defect densities decrease as SiC wafer production technology matures.

Mott Transition of MnO under Pressure: A Comparison of Correlated Band Theories

DOE Office of Scientific and Technical Information (OSTI.GOV)

Kasinathan, Deepa; Kunes, Jan; Koepernik, K

The electronic structure, magnetic moment, and volume collapse of MnO under pressure are obtained from four different correlated band theory methods; local density approximation+Hubbard U (LDA+U), pseudopotential self-interaction correction (pseudo-SIC), the hybrid functional (combined local exchange plus Hartree-Fock exchange), and the local spin density SIC (SIC-LSD) method. Each method treats correlation among the five Mn 3d orbitals (per spin), including their hybridization with three O 2p orbitals in the valence bands and their changes with pressure. The focus is on comparison of the methods for rock salt MnO (neglecting the observed transition to the NiAs structure in the 90-100 GPamore » range). Each method predicts a first-order volume collapse, but with variation in the predicted volume and critical pressure. Accompanying the volume collapse is a moment collapse, which for all methods is from high-spin to low-spin ((5/2){yields}(1/2)), not to nonmagnetic as the simplest scenario would have. The specific manner in which the transition occurs varies considerably among the methods: pseudo-SIC and SIC-LSD give insulator-to-metal, while LDA+U gives insulator-to-insulator and the hybrid method gives an insulator-to-semimetal transition. Projected densities of states above and below the transition are presented for each of the methods and used to analyze the character of each transition. In some cases the rhombohedral symmetry of the antiferromagnetically ordered phase clearly influences the character of the transition.« less

Injection molding of silicon carbide capable of being sintered without pressure

NASA Technical Reports Server (NTRS)

Muller-Zell, A.; Schwarzmeier, R.

1984-01-01

The most suitable SiC mass for injection molding of SiC articles (for subsequent pressureless sintering) consisted of beta SiC 84, a wax mixture 8, and polyethylene or polystyrene 8 parts. The most effective method for adding the binders was by dissolving them in a solvent and subsequent evaporation. The sequence of component addition was significant, and all parameters were optimized together rather than individually.

Optimization of KOH etching parameters for quantitative defect recognition in n- and p-type doped SiC

NASA Astrophysics Data System (ADS)

Sakwe, S. A.; Müller, R.; Wellmann, P. J.

2006-04-01

We have developed a KOH-based defect etching procedure for silicon carbide (SiC), which comprises in situ temperature measurement and control of melt composition. As benefit for the first time reproducible etching conditions were established (calibration plot, etching rate versus temperature and time); the etching procedure is time independent, i.e. no altering in KOH melt composition takes place, and absolute melt temperature values can be set. The paper describes this advanced KOH etching furnace, including the development of a new temperature sensor resistant to molten KOH. We present updated, absolute KOH etching parameters of n-type SiC and new absolute KOH etching parameters for low and highly p-type doped SiC, which are used for quantitative defect analysis. As best defect etching recipes we found T=530 °C/5 min (activation energy: 16.4 kcal/mol) and T=500 °C/5 min (activation energy: 13.5 kcal/mol) for n-type and p-type SiC, respectively.

Silicon Carbide Temperature Monitor Processing Improvements. Status Report

DOE Office of Scientific and Technical Information (OSTI.GOV)

Unruh, Troy Casey; Daw, Joshua Earl; Ahamad Al Rashdan

2016-01-29

Silicon carbide (SiC) temperature monitors are used as temperature sensors in Advanced Test Reactor (ATR) irradiations at the Idaho National Laboratory (INL). Although thermocouples are typically used to provide real-time temperature indication in instrumented lead tests, other indicators, such as melt wires, are also often included in such tests as an independent technique of detecting peak temperatures incurred during irradiation. In addition, less expensive static capsule tests, which have no leads attached for real-time data transmission, often rely on melt wires as a post-irradiation technique for peak temperature indication. Melt wires are limited in that they can only detect whethermore » a single temperature is or is not exceeded. SiC monitors are advantageous because a single monitor can be used to detect for a range of temperatures that occurred during irradiation. As part of the process initiated to make SiC temperature monitors available at the ATR, post-irradiation evaluations of these monitors have been previously completed at the High Temperature Test Laboratory (HTTL). INL selected the resistance measurement approach for determining irradiation temperature from SiC temperature monitors because it is considered to be the most accurate measurement. The current process involves the repeated annealing of the SiC monitors at incrementally increasing temperature, with resistivity measurements made between annealing steps. The process is time consuming and requires the nearly constant attention of a trained staff member. In addition to the expensive and lengthy post analysis required, the current process adds many potential sources of error in the measurement, as the sensor must be repeatedly moved from furnace to test fixture. This time-consuming post irradiation analysis is a significant portion of the total cost of using these otherwise inexpensive sensors. An additional consideration of this research is that, if the SiC post processing can be automated, it could be performed in an MFC hot cell, further reducing the time and expense of lengthy decontaminations prior to processing. Sections of this report provide a general description of resistivity techniques currently used to infer peak irradiation temperature from silicon carbide temperature monitors along with some representative data, the proposed concepts to improve the process of analyzing irradiated SiC temperature monitors, the completed efforts to prove the proposed concepts, and future activities. The efforts detailed here succeeded in designing and developing a real-time automated SiC resistivity measurement system, and performed two initial test runs. Activities carried out include the assembly and integration of the system hardware; the design and development of a preliminary monitor fixture; the design of a technique to automate the data analysis and processing; the development of the communication, coordination, and user software; and the execution and troubleshooting of test run experiments using the box furnace. Although the automation system performed as required, the designed fixture did not succeed in establishing the needed electrical contacts with the SiC monitor.« less

Pellet cladding mechanical interactions of ceramic claddings fuels under light water reactor conditions

NASA Astrophysics Data System (ADS)

Li, Bo-Shiuan

Ceramic materials such as silicon carbide (SiC) are promising candidate materials for nuclear fuel cladding and are of interest as part of a potential accident tolerant fuel design due to its high temperature strength, dimensional stability under irradiation, corrosion resistance, and lower neutron absorption cross-section. It also offers drastically lower hydrogen generation in loss of coolant accidents such as that experienced at Fukushima. With the implementation of SiC material properties to the fuel performance code, FRAPCON, performances of the SiC-clad fuel are compared with the conventional Zircaloy-clad fuel. Due to negligible creep and high stiffness, SiC-clad fuel allows gap closure at higher burnup and insignificant cladding dimensional change. However, severe degradation of SiC thermal conductivity with neutron irradiation will lead to higher fuel temperature with larger fission gas release. High stiffness of SiC has a drawback of accumulating large interfacial pressure upon pellet-cladding mechanical interactions (PCMI). This large stress will eventually reach the flexural strength of SiC, causing failure of SiC cladding instantly in a brittle manner instead of the graceful failure of ductile metallic cladding. The large interfacial pressure causes phenomena that were previously of only marginal significance and thus ignored (such as creep of the fuel) to now have an important role in PCMI. Consideration of the fuel pellet creep and elastic deformation in PCMI models in FRAPCON provide for an improved understanding of the magnitude of accumulated interfacial pressure. Outward swelling of the pellet is retarded by the inward irradiation-induced creep, which then reduces the rate of interfacial pressure buildup. Effect of PCMI can also be reduced and by increasing gap width and cladding thickness. However, increasing gap width and cladding thickness also increases the overall thermal resistance which leads to higher fuel temperature and larger fission gas release. An optimum design is sought considering both thermal and mechanical models of this ceramic cladding with UO2 and advanced high density fuels.

Metal-Free Cataluminescence Gas Sensor for Hydrogen Sulfide Based on Its Catalytic Oxidation on Silicon Carbide Nanocages.

PubMed

Wu, Liqian; Zhang, Lichun; Sun, Mingxia; Liu, Rui; Yu, Lingzhu; Lv, Yi

2017-12-19

Cataluminescence- (CTL-) based sensors are among the most attractive and effective tools for gas sensing, owing to their efficient selectivity, high sensitivity, and rapidity. As the sensing materials of CTL-based sensors, metal-based catalysts easily bring about high costs and environmental pollution of heavy metals. More importantly, the long-term stability of metal-based catalysts is usually rather poor. Metal-free catalysts have unique advantages such as environmental friendliness, low costs, and long-term stability, making them promising materials for CTL-based sensors. Herein, we report the fabrication of a CTL sensor based on a metal-free catalyst. F-doped cage-like SiC was synthesized by wet chemical etching. The as-prepared products showed a rapid, stable, highly selective, and sensitive cataluminescent response to H 2 S. The stability of the sensor was demonstrated to be fairly good for at least 15 days. After CTL tests, F-doped cage-like SiC retained its original morphology, structure, and chemical composition. In addition, to the best of our knowledge, this is the first report of a metal-free CTL sensor. Metal-free catalysts are environmentally friendly and low in cost and exhibit long-term stability, which could open a new avenue of CTL sensing.

Smoothing single-crystalline SiC surfaces by reactive ion etching using pure NF{sub 3} and NF{sub 3}/Ar mixture gas plasmas

DOE Office of Scientific and Technical Information (OSTI.GOV)

Tasaka, Akimasa, E-mail: aki-tasaka-load@yahoo.co.jp; Kotaka, Yuki; Oda, Atsushi

2014-09-01

In pure NF{sub 3} plasma, the etching rates of four kinds of single-crystalline SiC wafer etched at NF{sub 3} pressure of 2 Pa were the highest and it decreased with an increase in NF{sub 3} pressure. On the other hand, they increased with an increase in radio frequency (RF) power and were the highest at RF power of 200 W. A smooth surface was obtained on the single-crystalline 4H-SiC after reactive ion etching at NF{sub 3}/Ar gas pressure of 2 Pa and addition of Ar to NF{sub 3} plasma increased the smoothness of SiC surface. Scanning electron microscopy observation revealed that the numbermore » of pillars decreased with an increase in the Ar-concentration in the NF{sub 3}/Ar mixture gas. The roughness factor (R{sub a}) values were decreased from 51.5 nm to 25.5 nm for the As-cut SiC, from 0.25 nm to 0.20 nm for the Epi-SiC, from 5.0 nm to 0.7 nm for the Si-face mirror-polished SiC, and from 0.20 nm to 0.16 nm for the C-face mirror-polished SiC by adding 60% Ar to the NF{sub 3} gas. Both the R{sub a} values of the Epi- and the C-face mirror-polished wafer surfaces etched using the NF{sub 3}/Ar (40:60) plasma were similar to that treated with mirror polishing, so-called the Catalyst-Referred Etching (CARE) method, with which the lowest roughness of surface was obtained among the chemical mirror polishing methods. Etching duration for smoothing the single-crystalline SiC surface using its treatment was one third of that with the CARE method.« less

In-pile Hydrothermal Corrosion Evaluation of Coated SiC Ceramics and Composites

DOE Office of Scientific and Technical Information (OSTI.GOV)

Carpenter, David; Ang, Caen; Katoh, Yutai

2017-09-01

Hydrothermal corrosion accelerated by water radiolysis during normal operation is among the most critical technical feasibility issues remaining for silicon carbide (SiC) composite-based cladding that could provide enhanced accident-tolerance fuel technology for light water reactors. An integrated in-pile test was developed and performed to determine the synergistic effects of neutron irradiation, radiolysis, and pressurized water flow, all of which are relevant to a typical pressurized water reactor (PWR). The test specimens were chosen to cover a range of SiC materials and a variety of potential options for environmental barrier coatings. This document provides a summary of the irradiation vehicle design,more » operations of the experiment, and the specimen loading into the irradiation vehicle.« less

Development of an Extreme High Temperature n-type Ohmic Contact to Silicon Carbide

NASA Technical Reports Server (NTRS)

Evans, Laura J.; Okojie, Robert S.; Lukco, Dorothy

2011-01-01

We report on the initial demonstration of a tungsten-nickel (75:25 at. %) ohmic contact to silicon carbide (SiC) that performed for up to fifteen hours of heat treatment in argon at 1000 C. The transfer length method (TLM) test structure was used to evaluate the contacts. Samples showed consistent ohmic behavior with specific contact resistance values averaging 5 x 10-4 -cm2. The development of this contact metallization should allow silicon carbide devices to operate more reliably at the present maximum operating temperature of 600 C while potentially extending operations to 1000 C. Introduction Silicon Carbide (SiC) is widely recognized as one of the materials of choice for high temperature, harsh environment sensors and electronics due to its ability to survive and continue normal operation in such environments [1]. Sensors and electronics in SiC have been developed that are capable of operating at temperatures of 600 oC. However operating these devices at the upper reliability temperature threshold increases the potential for early degradation. Therefore, it is important to raise the reliability temperature ceiling higher, which would assure increased device reliability when operated at nominal temperature. There are also instances that require devices to operate and survive for prolonged periods of time above 600 oC [2, 3]. This is specifically needed in the area of hypersonic flight where robust sensors are needed to monitor vehicle performance at temperature greater than 1000 C, as well as for use in the thermomechanical characterization of high temperature materials (e.g. ceramic matrix composites). While SiC alone can withstand these temperatures, a major challenge is to develop reliable electrical contacts to the device itself in order to facilitate signal extraction

Material Development of Faraday Cup Grids for the Solar Probe Plus Mission

NASA Technical Reports Server (NTRS)

Volz, M. P.; Mazuruk, K.; Wright, K. H.; Cirtain, J. W.; Lee, R.; Kasper, J. C.

2011-01-01

The Solar Probe Plus mission will launch a spacecraft to the Sun to study it's outer atmosphere. One of the instruments on board will be a Faraday Cup (FC) sensor. The FC will determine solar wind properties by measuring the current produced by ions striking a metal collector plate. It will be directly exposed to the Sun and will be subject to the temperature and radiation environment that exist within 10 solar radii. Conducting grids within the FC are biased up to 10 kV and are used to selectively transmit particles based on their energy to charge ratio. We report on the development of SiC grids. Tests were done on nitrogen-doped SiC starting disks obtained from several vendors, including annealing under vacuum at 1400 C and measurement of their electrical properties. SiC grids were manufactured using a photolithographic and plasma-etching process. The grids were incorporated into a prototype FC and tested in a simulated solar wind chamber. The energy cutoffs were measured for both proton and electron fluxes and met the anticipated sensor requirements.

Low Temperature, Low Pressure Fabrication of Ultra High Temperature Ceramics (UHTCs)

DTIC Science & Technology

2006-08-01

preceramic polymers that convert by pyrolysis to SiC , SiOC or C. Potential polymeric precursors to ZrB2 and ZrC were not selected, because they were not...limited extent, C/ SiC composite substrates using preceramic and precarbon polymers combined with inert fillers and/or reactive metals. The evolved... SiC is an obvious example for powder mixed with a preceramic polymer binder to achieve the desired low-temperature processing. The polymeric

Ultra-high strain in epitaxial silicon carbide nanostructures utilizing residual stress amplification

NASA Astrophysics Data System (ADS)

Phan, Hoang-Phuong; Nguyen, Tuan-Khoa; Dinh, Toan; Ina, Ginnosuke; Kermany, Atieh Ranjbar; Qamar, Afzaal; Han, Jisheng; Namazu, Takahiro; Maeda, Ryutaro; Dao, Dzung Viet; Nguyen, Nam-Trung

2017-04-01

Strain engineering has attracted great attention, particularly for epitaxial films grown on a different substrate. Residual strains of SiC have been widely employed to form ultra-high frequency and high Q factor resonators. However, to date, the highest residual strain of SiC was reported to be limited to approximately 0.6%. Large strains induced into SiC could lead to several interesting physical phenomena, as well as significant improvement of resonant frequencies. We report an unprecedented nanostrain-amplifier structure with an ultra-high residual strain up to 8% utilizing the natural residual stress between epitaxial 3C-SiC and Si. In addition, the applied strain can be tuned by changing the dimensions of the amplifier structure. The possibility of introducing such a controllable and ultra-high strain will open the door to investigating the physics of SiC in large strain regimes and the development of ultra sensitive mechanical sensors.

Hydrothermal corrosion of silicon carbide joints without radiation

DOE PAGES

Koyanagi, Takaaki; Katoh, Yutai; Terrani, Kurt A.; ...

2016-09-28

In this paper, hydrothermal corrosion of four types of the silicon carbide (SiC) to SiC plate joints were investigated under pressurized water reactor and boiling water reactor relevant chemical conditions without irradiation. The joints were formed by metal diffusion bonding using molybdenum or titanium interlayer, reaction sintering using Ti—Si—C system, and SiC nanopowder sintering. Most of the joints withstood the corrosion tests for five weeks. The recession of the SiC substrates was limited. Based on the recession of the bonding layers, it was concluded that all the joints except for the molybdenum diffusion bond are promising under the reducing environmentsmore » without radiation. Finally, the SiC nanopowder sintered joint was the most corrosion tolerant under the oxidizing environment among the four joints.« less

High Temperature Characteristics of Pt/TaSi2/Pt/W and Pt/Ti/W Diffusion Barrier Systems for Ohmic Contacts to 4H-SiC

NASA Technical Reports Server (NTRS)

Okojie, Robert S.; Lukco, Dorothy

2017-01-01

The degradation of ohmic contacts to 4H-SiC pressure sensors over time at high temperature is primarily due to two failure mechanisms: migrating bond pad Au and atmospheric O toward the ohmic contact SiC interface and the inter-metallic mixing between diffusion barrier systems (DBS) and the underlying ohmic contact metallization. We investigated the effectiveness of Pt/TaSi2/Pt/W (DBS-A) and Pt/Ti/W (DBS-B) in preventing Au and O diffusion through the underlying binary Ti/W or alloyed W50:Ni50 ohmic contacts to 4H-SiC and the DBS ohmic contact intermixing at temperature up to 700 C.

Fiber-optic temperature sensor using a spectrum-modulating semiconductor etalon

NASA Technical Reports Server (NTRS)

Beheim, Glenn; Anthan, Donald J.; Beheim, Glenn; Anthan, Donald J.

1987-01-01

Described is a fiber-optic temperature sensor that uses a spectrum modulating SiC etalon. The spectral output of this type of sensor may be analyzed to obtain a temperature measurement which is largely independent of the transmission properties of the sensor's fiber-optic link. A highly precise laboratory spectrometer is described in detail, and this instrument is used to study the properties of this type of sensor. Also described are a number of different spectrum analyzers that are more suitable for use in a practical thermometer.

The Active Oxidation of Silicon Carbide

NASA Technical Reports Server (NTRS)

Jacobson, Nathan S.; Myers, Dwight L.

2009-01-01

The high temperature oxidation of silicon carbide occurs in two very different modes. Passive oxidation forms a protective oxide film which limits further attack of the SiC: SiC(s) + 3/2 O2(g) = SiO2(s) + CO(g) Active oxidation forms a volatile oxide and may lead to extensive attack of the SiC: SiC(s) + O2(g) = SiO(g) + CO(g) Generally passive oxidation occurs at higher oxidant pressures and active oxidation occurs at lower oxidant pressures and elevated temperatures. Active oxidation is a concern for reentry, where the flight trajectory involves the latter conditions. Thus the transition points and rates of active oxidation are a major concern. Passive/active transitions have been studied by a number of investigators. An examination of the literature indicates many questions remain regarding the effect of impurity, the hysteresis of the transition (i.e. the difference between active-to-passive and passive-toactive), and the effect of total pressure. In this study we systematically investigate each of these effects. Experiments were done in both an alumina furnace tube and a quartz furnace tube. It is known that alumina tubes release impurities such as sodium and increase the kinetics in the passive region [1]. We have observed that the active-to-passive transition occurs at a lower oxygen pressure when the experiment is conducted in alumina tubes and the resultant passive silica scale contains sodium. Thus the tests in this study are conducted in quartz tubes. The hysteresis of the transition has been discussed in the detail in the original theoretical treatise of this problem for pure silicon by Wagner [2], yet there is little mention of it in subsequent literature. Essentially Wagner points out that the active-to-passive transition is governed by the criterion for a stable Si/SiO2 equilibria and the passive-to-active transition is governed by the decomposition of the SiO2 film. A series of experiments were conducted for active-to-passive and passive-to-active transitions by increasing and decreasing oxygen pressure, respectively. For pure silicon a dramatic difference was found; whereas for SiC the difference was not as great. This may be due to the oxidation of the carbon in SiC which may break down the scale [3]. The third area is the effect of total pressure. In the literature, low oxygen potentials are achieved via either low total pressure or low oxygen pressure in an O2/Ar mixture. Both types of experiments are done in this study and the differences are discussed with regard to the presence or absence of a boundary layer.

Improvement on the electrical characteristics of Pd/HfO2/6H-SiC MIS capacitors using post deposition annealing and post metallization annealing

NASA Astrophysics Data System (ADS)

Esakky, Papanasam; Kailath, Binsu J.

2017-08-01

HfO2 as a gate dielectric enables high electric field operation of SiC MIS structure and as gas sensor HfO2/SiC capacitors offer higher sensitivity than SiO2/SiC capacitors. The issue of higher density of oxygen vacancies and associated higher leakage current necessitates better passivation of HfO2/SiC interface. Effect of post deposition annealing in N2O plasma and post metallization annealing in forming gas on the structural and electrical characteristics of Pd/HfO2/SiC MIS capacitors are reported in this work. N2O plasma annealing suppresses crystallization during high temperature annealing thereby improving the thermal stability and plasma annealing followed by rapid thermal annealing in N2 result in formation of Hf silicate at the HfO2/SiC interface resulting in order of magnitude lower density of interface states and gate leakage current. Post metallization annealing in forming gas for 40 min reduces interface state density by two orders while gate leakage current density is reduced by thrice. Post deposition annealing in N2O plasma and post metallization annealing in forming gas are observed to be effective passivation techniques improving the electrical characteristics of HfO2/SiC capacitors.

Amplifiers dedicated for large area SiC photodiodes

NASA Astrophysics Data System (ADS)

Doroz, P.; Duk, M.; Korwin-Pawlowski, M. L.; Borecki, M.

2016-09-01

Large area SiC photodiodes find applications in optoelectronic sensors working at special conditions. These conditions include detection of UV radiation in harsh environment. Moreover, the mentioned sensors have to be selective and resistant to unwanted signals. For this purpose, the modulation of light at source unit and the rejection of constant current and low frequency component of signal at detector unit are used. The popular frequency used for modulation in such sensor is 1kHz. The large area photodiodes are characterized by a large capacitance and low shunt resistance that varies with polarization of the photodiode and can significantly modify the conditions of signal pre-amplification. In this paper two pre-amplifiers topology are analyzed: the transimpedance amplifier and the non-inverting voltage to voltage amplifier with negative feedback. The feedback loops of both pre-amplifiers are equipped with elements used for initial constant current and low frequency signals rejections. Both circuits are analyzed and compared using simulation and experimental approaches.

Enhanced capabilities of separation in Sequential Injection Chromatography--fused-core particle column and its comparison with narrow-bore monolithic column.

PubMed

Chocholouš, Petr; Kosařová, Lucie; Satínský, Dalibor; Sklenářová, Hana; Solich, Petr

2011-08-15

In the Sequential Injection Chromatography (SIC) only monolithic columns for chromatographic separations have been used so far. This article presents the first use of fused-core particle packed column in an attempt to extend of the chromatographic capabilities of the SIC system. A new fused-core particle column (2.7 μm) Ascentis(®) Express C18 (Supelco™ Analytical) 30 mm × 4.6 mm brings high separation efficiency within flow rates and pressures comparable to monolithic column Chromolith(®) Performance RP-18e 100-3 (Merck(®)) 100 mm × 3 mm. Both columns matches the conditions of the commercially produced SIC system - SIChrom™ (8-port high-pressure selection valve and medium-pressure Sapphire™ syringe pump with 4 mL reservoir - maximal work pressure 1000 PSI) (FIAlab(®), USA). The system was tested by the separation of four estrogens with similar structure and an internal standard - ethylparaben. The mobile phase composed of acetonitrile/water (40/60 (v/v)) was pumped isocratic at flow rate 0.48 mL min(-1). Spectrophotometric detection was performed at wavelength of 225 nm and injected volume of sample solutions was 10 μL. The chromatographic characteristics of both columns were compared. Obtained results and conclusions have shown that both fused-core particle column and longer narrow shaped monolithic column bring benefits into the SIC method. Copyright © 2011 Elsevier B.V. All rights reserved.

Silicon Carbide Epitaxial Films Studied by Atomic Force Microscopy

NASA Technical Reports Server (NTRS)

1996-01-01

Silicon carbide (SiC) holds great potential as an electronic material because of its wide band gap energy, high breakdown electric field, thermal stability, and resistance to radiation damage. Possible aerospace applications of high-temperature, high-power, or high-radiation SiC electronic devices include sensors, control electronics, and power electronics that can operate at temperatures up to 600 C and beyond. Commercially available SiC devices now include blue light-emitting diodes (LED's) and high-voltage diodes for operation up to 350 C, with other devices under development. At present, morphological defects in epitaxially grown SiC films limit their use in device applications. Research geared toward reducing the number of structural inhomogeneities can benefit from an understanding of the type and nature of problems that cause defects. The Atomic Force Microscope (AFM) has proven to be a useful tool in characterizing defects present on the surface of SiC epitaxial films. The in-house High-Temperature Integrated Electronics and Sensors (HTIES) Program at the NASA Lewis Research Center not only extended the dopant concentration range achievable in epitaxial SiC films, but it reduced the concentration of some types of defects. Advanced structural characterization using the AFM was warranted to identify the type and structure of the remaining film defects and morphological inhomogeneities. The AFM can give quantitative information on surface topography down to molecular scales. Acquired, in part, in support of the Advanced High Temperature Engine Materials Technology Program (HITEMP), the AFM had been used previously to detect partial fiber debonding in composite material cross sections. Atomic force microscopy examination of epitaxial SiC film surfaces revealed molecular-scale details of some unwanted surface features. Growth pits propagating from defects in the substrate, and hillocks due, presumably, to existing screw dislocations in the substrates, were imaged. Away from local defects, step bunching was observed to yield step heights of hundreds of angstroms, with possible implications for the uniformity of dopants incorporated in SiC devices during fabrication. The quantitative topographic data from the AFM allow the relevant defect information to be extracted, such as the size and distribution of step bunching and the Burgers vector of screw dislocations. These atomic force microscopy results have furthered the understanding of the dynamic epitaxial SiC growth process. A model describing the observed hillock step bunching has been proposed. This cooperation between researchers involved in crystal growth, electronic device fabrication, and surface structural characterization is likely to continue as atomic force microscopy is used to improve SiC films for high-temperature electronic devices for NASA's advanced turbine engines and space power devices, as well as for future applications in the automotive industry.

High Temperature Corrosion of Silicon Carbide and Silicon Nitride in Water Vapor

NASA Technical Reports Server (NTRS)

Opila, E. J.; Robinson, Raymond C.; Cuy, Michael D.; Gray, Hugh R. (Technical Monitor)

2002-01-01

Silicon carbide (SiC) and silicon nitride (Si3N4) are proposed for applications in high temperature combustion environments containing water vapor. Both SiC and Si3N4 react with water vapor to form a silica (SiO2) scale. It is therefore important to understand the durability of SiC, Si3N4 and SiO2 in water vapor. Thermogravimetric analyses, furnace exposures and burner rig results were obtained for these materials in water vapor at temperatures between 1100 and 1450 C and water vapor partial pressures ranging from 0.1 to 3.1 atm. First, the oxidation of SiC and Si3N4 in water vapor is considered. The parabolic kinetic rate law, rate dependence on water vapor partial pressure, and oxidation mechanism are discussed. Second, the volatilization of silica to form Si(OH)4(g) is examined. Mass spectrometric results, the linear kinetic rate law and a volatilization model based on diffusion through a gas boundary layer are discussed. Finally, the combined oxidation and volatilization reactions, which occur when SiC or Si3N4 are exposed in a water vapor-containing environment, are presented. Both experimental evidence and a model for the paralinear kinetic rate law are shown for these simultaneous oxidation and volatilization reactions.

Effect of SiC Nanowhisker on the Microstructure and Mechanical Properties of WC-Ni Cemented Carbide Prepared by Spark Plasma Sintering

PubMed Central

Fu, Zhiqiang; Wang, Chengbiao

2014-01-01

Ultrafine tungsten carbide-nickel (WC-Ni) cemented carbides with varied fractions of silicon carbide (SiC) nanowhisker (0–3.75 wt.%) were fabricated by spark plasma sintering at 1350°C under a uniaxial pressure of 50 MPa with the assistance of vanadium carbide (VC) and tantalum carbide (TaC) as WC grain growth inhibitors. The effects of SiC nanowhisker on the microstructure and mechanical properties of the as-prepared WC-Ni cemented carbides were investigated. X-ray diffraction analysis revealed that during spark plasma sintering (SPS) Ni may react with the applied SiC nanowhisker, forming Ni2Si and graphite. Scanning electron microscopy examination indicated that, with the addition of SiC nanowhisker, the average WC grain size decreased from 400 to 350 nm. However, with the additional fractions of SiC nanowhisker, more and more Si-rich aggregates appeared. With the increase in the added fraction of SiC nanowhisker, the Vickers hardness of the samples initially increased and then decreased, reaching its maximum of about 24.9 GPa when 0.75 wt.% SiC nanowhisker was added. However, the flexural strength of the sample gradually decreased with increasing addition fraction of SiC nanowhisker. PMID:25003143

Plastic Deformation of Micromachined Silicon Diaphragms with a Sealed Cavity at High Temperatures

PubMed Central

Ren, Juan; Ward, Michael; Kinnell, Peter; Craddock, Russell; Wei, Xueyong

2016-01-01

Single crystal silicon (SCS) diaphragms are widely used as pressure sensitive elements in micromachined pressure sensors. However, for harsh environments applications, pure silicon diaphragms are hardly used because of the deterioration of SCS in both electrical and mechanical properties. To survive at the elevated temperature, the silicon structures must work in combination with other advanced materials, such as silicon carbide (SiC) or silicon on insulator (SOI), for improved performance and reduced cost. Hence, in order to extend the operating temperatures of existing SCS microstructures, this work investigates the mechanical behavior of pressurized SCS diaphragms at high temperatures. A model was developed to predict the plastic deformation of SCS diaphragms and was verified by the experiments. The evolution of the deformation was obtained by studying the surface profiles at different anneal stages. The slow continuous deformation was considered as creep for the diaphragms with a radius of 2.5 mm at 600 °C. The occurrence of plastic deformation was successfully predicted by the model and was observed at the operating temperature of 800 °C and 900 °C, respectively. PMID:26861332

Effect of Copper Coated SiC Reinforcements on Microstructure, Mechanical Properties and Wear of Aluminium Composites

NASA Astrophysics Data System (ADS)

Kori, P. S.; Vanarotti, Mohan; Angadi, B. M.; Nagathan, V. V.; Auradi, V.; Sakri, M. I.

2017-08-01

Experimental investigations are carried out to study the influence of copper coated Silicon carbide (SiC) reinforcements in Aluminum (Al) based Al-SiC composites. Wear behavior and mechanical Properties like, ultimate tensile strength (UTS) and hardness are studied in the present work. Experimental results clearly revealed that, an addition of SiC particles (5, 10 and 15 Wt %) has lead in the improvement of hardness and ultimate tensile strength. Al-SiC composites containing the Copper coated SiC reinforcements showed better improvement in mechanical properties compared to uncoated ones. Characterization of Al-SiC composites are carried out using optical photomicrography and SEM analysis. Wear tests are carried out to study the effects of composition and normal pressure using Pin-On Disc wear testing machine. Results suggested that, wear rate decreases with increasing SiC composition, further an improvement in wear resistance is observed with copper coated SiC reinforcements in the Al-SiC metal matrix composites (MMC’s).

Multi-Functional, Micro Electromechanical Silicon Carbide Accelerometer

NASA Technical Reports Server (NTRS)

Okojie, Robert S. (Inventor)

2004-01-01

A method of bulk manufacturing SiC sensors is disclosed and claimed. Materials other than SiC may be used as the substrate material. Sensors requiring that the SiC substrate be pierced are also disclosed and claimed. A process flow reversal is employed whereby the metallization is applied first before the recesses are etched into or through the wafer. Aluminum is deposited on the entire planar surface of the metallization. Photoresist is spun onto the substantially planar surface of the Aluminum which is subsequently masked (and developed and removed). Unwanted Aluminum is etched with aqueous TMAH and subsequently the metallization is dry etched. Photoresist is spun onto the still substantially planar surface of Aluminum and oxide and then masked (and developed and removed) leaving the unimidized photoresist behind. Next, ITO is applied over the still substantially planar surface of Aluminum, oxide and unimidized photoresist. Unimidized and exposed photoresist and ITO directly above it are removed with Acetone. Next, deep reactive ion etching attacks exposed oxide not protected by ITO. Finally, hot phosphoric acid removes the Al and ITO enabling wires to connect with the metallization. The back side of the SiS wafer may be also etched.

SiC Technology

NASA Technical Reports Server (NTRS)

Neudeck, Philip G.

1998-01-01

Silicon carbide (SiC)-based semiconductor electronic devices and circuits are presently being developed for use in high-temperature, high-power, and/or high-radiation conditions under which conventional semiconductors cannot adequately perform. Silicon carbide's ability to function under such extreme conditions is expected to enable significant improvements to a far-ranging variety of applications and systems. These range from greatly improved high-voltage switching [1- 4] for energy savings in public electric power distribution and electric motor drives to more powerful microwave electronics for radar and communications [5-7] to sensors and controls for cleaner-burning more fuel-efficient jet aircraft and automobile engines. In the particular area of power devices, theoretical appraisals have indicated that SiC power MOSFET's and diode rectifiers would operate over higher voltage and temperature ranges, have superior switching characteristics, and yet have die sizes nearly 20 times smaller than correspondingly rated silicon-based devices [8]. However, these tremendous theoretical advantages have yet to be realized in experimental SiC devices, primarily due to the fact that SiC's relatively immature crystal growth and device fabrication technologies are not yet sufficiently developed to the degree required for reliable incorporation into most electronic systems [9]. This chapter briefly surveys the SiC semiconductor electronics technology. In particular, the differences (both good and bad) between SiC electronics technology and well-known silicon VLSI technology are highlighted. Projected performance benefits of SiC electronics are highlighted for several large-scale applications. Key crystal growth and device-fabrication issues that presently limit the performance and capability of high temperature and/or high power SiC electronics are identified.

Benzene Adsorption on C24, Si@C24, Si-Doped C24, and C20 Fullerenes

NASA Astrophysics Data System (ADS)

Baei, Mohammad T.

2017-12-01

The absorption feasibility of benzene molecule in the C24, Si@C24, Si-doped C24, and C20 fullerenes has been studied based on calculated electronic properties of these fullerenes using Density functional Theory (DFT). It is found that energy of benzene adsorption on C24, Si@C24, and Si-doped C24 fullerenes were in range of -2.93 and -51.19 kJ/mol with little changes in their electronic structure. The results demonstrated that the C24, Si@C24, and Si-doped C24 fullerenes cannot be employed as a chemical adsorbent or sensor for benzene. Silicon doping cannot significantly modify both the electronic properties and benzene adsorption energy of C24 fullerene. On the other hand, C20 fullerene exhibits a high sensitivity, so that the energy gap of the fullerene is changed almost 89.19% after the adsorption process. We concluded that the C20 fullerene can be employed as a reliable material for benzene detection.

Silicon carbide novel optical sensor for combustion systems and nuclear reactors

NASA Astrophysics Data System (ADS)

Lim, Geunsik; Kar, Aravinda

2014-09-01

Crystalline silicon carbide is a wide bandgap semiconductor material with excellent optical properties, chemical inertness, radiation hardness and high mechanical strength at high temperatures. It is an excellent material platform for sensor applications in harsh environments such as combustion systems and nuclear reactors. A laser doping technique is used to fabricate SiC sensors for different combustion gases such as CO2, CO, NO and NO2. The sensor operates based on the principle of semiconductor optics, producing optical signal in contrast to conventional electrical sensors that produces electrical signal. The sensor response is measured with a low power He-Ne or diode laser.

Nanoparticles and nanorods of silicon carbide from the residues of corn

NASA Astrophysics Data System (ADS)

Qadri, S. B.; Gorzkowski, E.; Rath, B. B.; Feng, J.; Qadri, S. N.; Kim, H.; Caldwell, J. D.; Imam, M. A.

2015-01-01

We have investigated the thermally induced transformation of various residues of the corn plant into nanoparticles and nanorods of different silicon carbide (SiC) polytypes. This has been accomplished by both microwave-induced and conventional furnace pyrolysis in excess of 1450 °C in an inert atmosphere. This simple process of producing nanoparticles of different polytypes of SiC from the corn plant opens a new method of utilizing agricultural waste to produce viable industrial products that are technologically important for nanoelectronics, molecular sensors, nanophotonics, biotechnology, and other mechanical applications. Using x-ray and Raman scattering characterization, we have demonstrated that the processed samples of corn husk, leaves, stalks, and cob consist of SiC nanostructures of the 2H, 3C, 4H, and 6H polytypes.

Fast neutron detection at near-core location of a research reactor with a SiC detector

NASA Astrophysics Data System (ADS)

Wang, Lei; Jarrell, Josh; Xue, Sha; Tan, Chuting; Blue, Thomas; Cao, Lei R.

2018-04-01

The measurable charged-particle produced from the fast neutron interactions with the Si and C nucleuses can make a wide bandgap silicon carbide (SiC) sensor intrinsically sensitive to neutrons. The 4H-SiC Schottky detectors have been fabricated and tested at up to 500 °C, presenting only a slightly degraded energy resolution. The response spectrum of the SiC detectors were also obtained by exposing the detectors to external neutron beam irradiation and at a near-core location where gamma-ray field is intense. The fast neutron flux of these two locations are ∼ 4 . 8 × 104cm-2 ṡs-1 and ∼ 2 . 2 × 107cm-2 ṡs-1, respectively. At the external beam location, a Si detector was irradiated side-by-side with SiC detector to disjoin the neutron response from Si atoms. The contribution of gamma ray, neutron scattering, and charged-particles producing reactions in the SiC was discussed. The fast neutron detection efficiencies were determined to be 6 . 43 × 10-4 for the external fast neutron beam irradiation and 6 . 13 × 10-6 for the near-core fast neutron irradiation.

Normal incidence reflectance of ion beam deposited SiC films in the EUV

NASA Technical Reports Server (NTRS)

Keski-Kuha, Ritva A. M.; Osantowski, John F.; Herzig, Howard; Gum, Jeffrey S.; Toft, Albert R.

1988-01-01

Results are presented from an experimental investigation of the normal-incidence reflectance at 58.4, 92.0, and 121.6 nm wavelength of 30- and 80-nm-thick SiC films produced by ion-beam deposition on unheated 5 x 5-cm microscope slides. The films were deposited in the 2-m evaporator described by Bradford et al. (1969) with chamber base pressure 1 microtorr, operating pressure 40 microtorr, and a 50-62-mA 750-eV Ar ion beam; the reflectance measurements were obtained in the reflector-monochromator system described by Osantowski (1974). Reflectances of over 30 percent were found at 92 and 121.6 nm, almost equal to those of polished CVD films of SiC and degrading only slightly after aging for 4 months. It is suggested that ion-beam deposition may be the best low-temperature technique for coating EUV optics for space astronomy.

Formation of boron nitride coatings on silicon carbide fibers using trimethylborate vapor

NASA Astrophysics Data System (ADS)

Yuan, Mengjiao; Zhou, Tong; He, Jing; Chen, Lifu

2016-09-01

High quality boron nitride (BN) coatings have been grown on silicon carbide (SiC) fibers by carbothermal nitridation and at atmospheric pressure. SiC fibers were first treated in chlorine gas to form CDC (carbide-derived carbon) film on the fiber surface. The CDC-coated SiC fibers were then reacted with trimethylborate vapor and ammonia vapor at high temperature, forming BN coatings by carbothermal reduction. The FT-IR, XPS, XRD, SEM, TEM and AES were used to investigate the formation of the obtained coatings. It has been found that the obtained coatings are composed of phase mixture of h-BN and amorphous carbon, very uniform in thickness, have smooth surface and adhere well with the SiC fiber substrates. The BN-coated SiC fibers retain ∼80% strength of the as-received SiC fibers and show an obvious interfacial debonding and fiber pullout in the SiCf/SiOC composites. This method may be useful for the large scale production of high quality BN coating on silicon carbide fiber.

Thin Film Heat Flux Sensor Development for Ceramic Matrix Composite (CMC) Systems

NASA Technical Reports Server (NTRS)

Wrbanek, John D.; Fralick, Gustave C.; Hunter, Gary W.; Zhu, Dongming; Laster, Kimala L.; Gonzalez, Jose M.; Gregory, Otto J.

2010-01-01

The NASA Glenn Research Center (GRC) has an on-going effort for developing high temperature thin film sensors for advanced turbine engine components. Stable, high temperature thin film ceramic thermocouples have been demonstrated in the lab, and novel methods of fabricating sensors have been developed. To fabricate thin film heat flux sensors for Ceramic Matrix Composite (CMC) systems, the rough and porous nature of the CMC system posed a significant challenge for patterning the fine features required. The status of the effort to develop thin film heat flux sensors specifically for use on silicon carbide (SiC) CMC systems with these new technologies is described.

Electronic-structure calculations of praseodymium metal by means of modified density-functional theory

DOE Office of Scientific and Technical Information (OSTI.GOV)

Svane, A.; Trygg, J.; Johansson, B.

1997-09-01

Electronic-structure calculations of elemental praseodymium are presented. Several approximations are used to describe the Pr f electrons. It is found that the low-pressure, trivalent phase is well described using either the self-interaction corrected (SIC) local-spin-density (LSD) approximation or the generalized-gradient approximation (GGA) with spin and orbital polarization (OP). In the SIC-LSD approach the Pr f electrons are treated explicitly as localized with a localization energy given by the self-interaction of the f orbital. In the GGA+OP scheme the f-electron localization is described by the onset of spin and orbital polarization, the energetics of which is described by spin-moment formation energymore » and a term proportional to the total orbital moment, L{sub z}{sup 2}. The high-pressure phase is well described with the f electrons treated as band electrons, in either the LSD or the GGA approximations, of which the latter describes more accurately the experimental equation of state. The calculated pressure of the transition from localized to delocalized behavior is 280 kbar in the SIC-LSD approximation and 156 kbar in the GGA+OP approach, both comparing favorably with the experimentally observed transition pressure of 210 kbar. {copyright} {ital 1997} {ital The American Physical Society}« less

Silicon Carbide Technology

NASA Technical Reports Server (NTRS)

Neudeck, Philip G.

2006-01-01

Silicon carbide based semiconductor electronic devices and circuits are presently being developed for use in high-temperature, high-power, and high-radiation conditions under which conventional semiconductors cannot adequately perform. Silicon carbide's ability to function under such extreme conditions is expected to enable significant improvements to a far-ranging variety of applications and systems. These range from greatly improved high-voltage switching for energy savings in public electric power distribution and electric motor drives to more powerful microwave electronics for radar and communications to sensors and controls for cleaner-burning more fuel-efficient jet aircraft and automobile engines. In the particular area of power devices, theoretical appraisals have indicated that SiC power MOSFET's and diode rectifiers would operate over higher voltage and temperature ranges, have superior switching characteristics, and yet have die sizes nearly 20 times smaller than correspondingly rated silicon-based devices [8]. However, these tremendous theoretical advantages have yet to be widely realized in commercially available SiC devices, primarily owing to the fact that SiC's relatively immature crystal growth and device fabrication technologies are not yet sufficiently developed to the degree required for reliable incorporation into most electronic systems. This chapter briefly surveys the SiC semiconductor electronics technology. In particular, the differences (both good and bad) between SiC electronics technology and the well-known silicon VLSI technology are highlighted. Projected performance benefits of SiC electronics are highlighted for several large-scale applications. Key crystal growth and device-fabrication issues that presently limit the performance and capability of high-temperature and high-power SiC electronics are identified.

NASA Sea Ice Validation Program for the Defense Meteorological Satellite Program Special Sensor Microwave Imager

NASA Technical Reports Server (NTRS)

Cavalieri, Donald J. (Editor); Crawford, John P.; Drinkwater, Mark R.; Emery, William J.; Eppler, Duane T.; Farmer, L. Dennis; Fowler, Charles W.; Goodberlet, Mark; Jentz, Robert R.; Milman, Andrew

1992-01-01

The history of the program is described along with the SSM/I sensor, including its calibration and geolocation correction procedures used by NASA, SSM/I data flow, and the NASA program to distribute polar gridded SSM/I radiances and sea ice concentrations (SIC) on CD-ROMs. Following a discussion of the NASA algorithm used to convert SSM/I radiances to SICs, results of 95 SSM/I-MSS Landsat IC comparisons for regions in both the Arctic and the Antarctic are presented. The Landsat comparisons show that the overall algorithm accuracy under winter conditions is 7 pct. on average with 4 pct. negative bias. Next, high resolution active and passive microwave image mosaics from coordinated NASA and Navy aircraft underflights over regions of the Beaufort and Chukchi seas in March 1988 were used to show that the algorithm multiyear IC accuracy is 11 pct. on average with a positive bias of 12 pct. Ice edge crossings of the Bering Sea by the NASA DC-8 aircraft were used to show that the SSM/I 15 pct. ice concentration contour corresponds best to the location of the initial bands at the ice edge. Finally, a summary of results and recommendations for improving the SIC retrievals from spaceborne radiometers are provided.

Sintering Behavior of Nanocrystalline Silicon Carbide Using a Plasma Pressure Compaction System: Master Sintering Curve Analysis

NASA Astrophysics Data System (ADS)

Bothara, Manish G.; Atre, Sundar V.; Park, Seong-Jin; German, Randall M.; Sudarshan, T. S.; Radhakrishnan, R.

2010-12-01

Nanostructured ceramics offer significant improvements in properties over corresponding materials with larger grain sizes on the order of tens to hundreds of micrometers. Silicon carbide (SiC) samples with grain sizes on the order of 100 nm can result in improved strength, chemical resistance, thermal stability, and tailored electrical resistivity. In this study, nanocrystalline SiC was processed in a plasma pressure compaction (P2C) system at a temperature of 1973 K (1700 °C) that was much lower than the temperatures reported for other sintering techniques. Microstructure of the resulting samples was studied and the hardness and the fracture toughness were measured. The grain sizes were on the order of 700 nm, the hardness between 22 and 24 GPa, and the toughness between 5 and 6.5 MPa·m1/2. The master sintering curve (MSC) analysis was used to model the densification behavior of SiC powder sintered by the P2C method. The apparent activation energies for three different pressures of 10, 30, and 50 MPa were obtained to be 1666, 1034, and 1162 kJ/mol, respectively. Although densification occurs via diffusion, the activation energies were higher than those associated with self-diffusion in SiC (between 570 and 920 kJ/mol). A validation study of the MSC was also conducted and the variation in observed density from the density predicted by the MSC was found to range from 1 to 10 pct.

Laser erosion diagnostics of plasma facing materials with displacement sensors and their application to safeguard monitors to protect nuclear fusion chambers

NASA Astrophysics Data System (ADS)

Kasuya, Koichi; Motokoshi, Shinji; Taniguchi, Seiji; Nakai, Mitsuo; Tokunaga, Kazutoshi; Mroz, Waldemar; Budner, Boguslaw; Korczyc, Barbara

2015-02-01

Tungsten and SiC are candidates for the structural materials of the nuclear fusion reactor walls, while CVD poly-crystal diamond is candidate for the window material under the hazardous fusion stresses. We measured the surface endurance strength of such materials with commercial displacement sensors and our recent evaluation method. The pulsed high thermal input was put into the material surfaces by UV lasers, and the surface erosions were diagnosed. With the increase of the total number of the laser shots per position, the crater depth increased gradually. The 3D and 2D pictures of the craters were gathered and compared under various experimental conditions. For example, the maximum crater depths were plotted as a function of shot accumulated numbers, from which we evaluated the threshold thermal input for the surface erosions to be induced. The simple comparison-result showed that tungsten was stronger roughly two times than SiC. Then we proposed how to monitor the surface conditions of combined samples with such diamonds coated with thin tungsten layers, when we use such samples as parts of divertor inner walls, fusion chamber first walls, and various diagnostic windows. We investigated how we might be able to measure the inner surface erosions with the same kinds of displacement sensors. We found out the measurable maximum thickness of such diamond which is useful to monitor the erosion. Additionally we showed a new scheme of fusion reactor systems with injectors for anisotropic pellets and heating lasers under the probable use of W and/or SiC.

Ultra-High Temperature Steam Corrosion of Complex Silicates for Nuclear Applications: A Computational Study

DOE Office of Scientific and Technical Information (OSTI.GOV)

Rashkeev, Sergey N.; Glazoff, Michael V.; Tokuhiro, Akira

2014-01-01

Stability of materials under extreme conditions is an important issue for safety of nuclear reactors. Presently, silicon carbide (SiC) is being studied as a cladding material candidate for fuel rods in boiling-water and pressurized water-cooled reactors (BWRs and PWRs) that would substitute or modify traditional zircaloy materials. The rate of corrosion of the SiC ceramics in hot vapor environment (up to 2200 degrees C) simulating emergency conditions of light water reactor (LWR) depends on many environmental factors such as pressure, temperature, viscosity, and surface quality. Using the paralinear oxidation theory developed for ceramics in the combustion reactor environment, we estimatedmore » the corrosion rate of SiC ceramics under the conditions representing a significant power excursion in a LWR. It was established that a significant time – at least 100 h – is required for a typical SiC braiding to significantly degrade even in the most aggressive vapor environment (with temperatures up to 2200 °C) which is possible in a LWR at emergency condition. This provides evidence in favor of using the SiC coatings/braidings for additional protection of nuclear reactor rods against off-normal material degradation during power excursions or LOCA incidents. Additionally, we discuss possibilities of using other silica based ceramics in order to find materials with even higher corrosion resistance than SiC. In particular, we found that zircon (ZrSiO4) is also a very promising material for nuclear applications. Thermodynamic and first-principles atomic-scale calculations provide evidence of zircon thermodynamic stability in aggressive environments at least up to 1535 degrees C.« less

Packaging Technology Developed for High-Temperature Silicon Carbide Microsystems

NASA Technical Reports Server (NTRS)

Chen, Liang-Yu; Hunter, Gary W.; Neudeck, Philip G.

2001-01-01

High-temperature electronics and sensors are necessary for harsh-environment space and aeronautical applications, such as sensors and electronics for space missions to the inner solar system, sensors for in situ combustion and emission monitoring, and electronics for combustion control for aeronautical and automotive engines. However, these devices cannot be used until they can be packaged in appropriate forms for specific applications. Suitable packaging technology for operation temperatures up to 500 C and beyond is not commercially available. Thus, the development of a systematic high-temperature packaging technology for SiC-based microsystems is essential for both in situ testing and commercializing high-temperature SiC sensors and electronics. In response to these needs, researchers at Glenn innovatively designed, fabricated, and assembled a new prototype electronic package for high-temperature electronic microsystems using ceramic substrates (aluminum nitride and aluminum oxide) and gold (Au) thick-film metallization. Packaging components include a ceramic packaging frame, thick-film metallization-based interconnection system, and a low electrical resistance SiC die-attachment scheme. Both the materials and fabrication process of the basic packaging components have been tested with an in-house-fabricated SiC semiconductor test chip in an oxidizing environment at temperatures from room temperature to 500 C for more than 1000 hr. These test results set lifetime records for both high-temperature electronic packaging and high-temperature electronic device testing. As required, the thick-film-based interconnection system demonstrated low (2.5 times of the room-temperature resistance of the Au conductor) and stable (decreased 3 percent in 1500 hr of continuous testing) electrical resistance at 500 C in an oxidizing environment. Also as required, the electrical isolation impedance between printed wires that were not electrically joined by a wire bond remained high (greater than 0.4 GW) at 500 C in air. The attached SiC diode demonstrated low (less than 3.8 W/mm2) and relatively consistent dynamic resistance from room temperature to 500 C. These results indicate that the prototype package and the compatible die-attach scheme meet the initial design standards for high-temperature, low-power, and long-term operation. This technology will be further developed and evaluated, especially with more mechanical tests of each packaging element for operation at higher temperatures and longer lifetimes.

Properties of thin SiC membrane for x-ray mask

NASA Astrophysics Data System (ADS)

Shoki, Tsutomu; Nagasawa, Hiroyuki; Kosuga, Hiroyuki; Yamaguchi, Yoichi; Annaka, Noromichi; Amemiya, Isao; Nagarekawa, Osamu

1993-06-01

We have investigated the effects of film thickness, anti-reflective (AR) coating and surface roughness on the optical transparency of silicon carbide (SiC) membrane. Peak transmittances monotonously increased as the thickness decreased. The transmittance at 633 nm for 1.05 micrometers thick SiC membrane adjusted by reactive ion etching was 70%, and increased up to 80% by an AR coating. SiC membrane with extremely smooth surface of 0.12 nm (Ra) has been obtained by polishing, and had peak transmittances of 69% and 80% at 633 nm for 2.0 micrometers and 1.0 micrometers in thickness, respectively. Poly-crystalline (beta) -SiC membrane in the suitable tensile stress range of 0.3 to 2.0 X 108 Pa and with high Young's modulus of 4.5 X 1011 Pa has been prepared by a hot wall type low pressure chemical vapor deposition, and been found to need to have thickness over 0.7 micrometers to maintain sufficient mechanical strength in processing.

Behavior of HfB2-SiC Materials in Simulated Re-Entry Environments

NASA Technical Reports Server (NTRS)

Ellerby, Don; Beckman, Sarah; Irby, Edward; Johnson, Sylvia M.; Gunsman, Michael; Gasch, Matthew; Ridge, Jerry; Martinez, Ed; Squire, Tom; Olejniczak, Joe

2003-01-01

The objectives of this research are to: 1) Investigate the oxidation/ablation behavior of HfB2/SiC materials in simulated re-entry environments; 2) Use the arc jet test results to define appropriate use environments for these materials for use in vehicle design. The parameters to be investigated include: surface temperature, stagnation pressure, duration, number of cycles, and thermal stresses.

Characterization of 720 and 940 MHz Oscillators with Chip Antenna for Wireless Sensors from Room Temperature to 200 and 250 deg C

NASA Technical Reports Server (NTRS)

Scardelletti, Maximilian C.; Ponchak, George E.

2011-01-01

Oscillators that operate at 720 and 940 MHz and characterized over a temperature range of 25 C to 200 C and 250 C, respectively, are presented. The oscillators are designed on alumina substrates with typical integrated circuit fabrication techniques. Cree SiC MESFETs, thin film metal-insulator-metal capacitors and spiral inductors, and Johanson miniature chip antennas make-up the circuits. The output power and phase noise are presented as a function of temperature and frequency. Index Terms MESFETS, chip antennas, oscillators SiC alumina.

Examination of the Atomic Pair Distribution Function (PDF) of SiC Nanocrystals by In-situ High Pressure Diffraction

NASA Technical Reports Server (NTRS)

Grzanka, E.; Stelmakh, S.; Gierlotka, S.; Zhao, Y.; Palosz, B.; Palosz, W.

2003-01-01

Key properties of nanocrystals are determined by their real atomic structure, therefore a reasonable understanding and meaningful interpretation of their properties requires a realistic model of the structure. In this paper we present an evidence of a complex response of the lattice distances to external pressure indicating a presence of a complex structure of Sic nanopowders. The experiments were performed on nanocrystalline Sic subjected to hydrostatic or isostatic pressure using synchrotron and neutron powder diffraction. Elastic properties of the samples were examined based on X-ray diffraction data using a Diamond Anvil Cell (DAC) in HASYLAB at DESY. The dependence'of the lattice parameters and of the Bragg reflections width with pressure exhibits a ha1 nature of the properties (compressibilities) of the powders and indicates a complex structure of the grains. We interpreted tws behaviour as originating from different elastic properties of the grain interior and surface. Analysis of the dependence of individual interatomic distances on pressure was based on in-situ neutron diffraction measurements done with HbD diffractometer at LANSCE in Los Alamos National Laboratory with the Paris-Edinburgh cell under pressures up to 8 GPa (Qmax = 26/A). Interatomic distances were obtained by PDF analysis using the PDFgetN program. We have found that the interatomic distances undergo a complex, non-monotonic changes. Even under substantial pressures a considerable relaxation of the lattice may take place: some interatomic distances increase with an increase in pressure. We relate this phenomenon to: (1), changes of the microstructure of the densified material, in particular breaking of its fractal chain structure and, (2), its complex structure resembling that of a material composed of two phases, each with its distinct elastic properties.

Thermochemical Assessment of Oxygen Gettering by SiC or ZrC in PuO2-x TRISO Fuel

DOE Office of Scientific and Technical Information (OSTI.GOV)

Besmann, Theodore M

2010-01-01

Particulate nuclear fuel in a modular helium reactor is being considered for the consumption of excess plutonium and related transuranics. In particular, efforts to largely consume transuranics in a single-pass will require the fuel to undergo very high burnup. This deep burn concept will thus make the proposed plutonia TRISO fuel particularly likely to suffer kernel migration where carbon in the buffer layer and inner pyrolytic carbon layer is transported from the high temperature side of the particle to the low temperature side. This phenomenon is oberved to cause particle failure and therefore must be mitigated. The addition of SiCmore » or ZrC in the oxide kernel or in a layer in communication with the kernel will lower the oxygen potential and therefore prevent kernel migration, and this has been demonstrated with SiC. In this work a thermochemical analysis was performed to predict oxygen potential behavior in the plutonia TRISO fuel to burnups of 50% FIMA with and without the presence of oxygen gettering SiC and ZrC. Kernel migration is believed to be controlled by CO gas transporting carbon from the hot side to the cool side, and CO pressure is governed by the oxygen potential in the presence of carbon. The gettering phases significantly reduce the oxygen potential and thus CO pressure in an otherwise PuO2-x kernel, and prevent kernel migration by limiting CO gas diffusion through the buffer layer. The reduction in CO pressure can also reduce the peak pressure within the particles by ~50%, thus reducing the likelihood of pressure-induced particle failure. A model for kernel migration was used to semi-quantitatively assess the effect of controlling oxygen potential with SiC or ZrC and did demonstrated the dramatic effect of the addition of these phases on carbon transport.« less

Burner rig hot corrosion of silicon carbide and silicon nitride

NASA Technical Reports Server (NTRS)

Fox, Dennis S.; Smialek, James L.

1990-01-01

A number of commercially available SiC and Si3N4 materials were exposed to 1000 C for 40 h in a high-velocity, pressurized burner rig as a simulation of an aircraft turbine environment. Na impurities (2 ppm) added to the burner flame resulted in molten Na2SO4 deposition, attack of the SiC and Si3N4, and formation of substantial Na2O+x(SiO2) corrosion product. Room-temperature strength of the materials decreased as a result of the formation of corrosion pits in SiC and grain-boundary dissolution and pitting in Si3N4.

Microstructural and strength stability of CVD SiC fibers in argon environment

NASA Technical Reports Server (NTRS)

Bhatt, Ramakrishna T.; Hull, David R.

1991-01-01

The room temperature tensile strength and microstructure of three types of commercially available chemically vapor deposited silicon carbide fibers were measured after 1, 10, and 100 hour heat treatments under argon pressures of 0.1 to 310 MPa at temperatures to 2100 C. Two types of fiber had carbon-rich surface coatings and the other contained no coating. All three fiber types showed strength degradation beyond 1400 C. Time and temperature of exposure had greater influence on strength degradation than argon pressure. Recrystallization and growth of near stoichiometric SiC grains appears to be the dominant mechanism for the strength degradation.

Microstructural and strength stability of CVD SiC fibers in argon environments

NASA Technical Reports Server (NTRS)

Bhatt, Ramakrishna T.; Hull, David R.

1991-01-01

The room temperature tensile strength and microstructure of three types of commercially available chemically vapor deposited silicon carbide fibers were measured after 1, 10, and 100 hour heat treatments under argon pressures of 0.1 to 310 MPa at temperatures to 2100 C. Two types of fiber had carbon-rich surface coatings and the other contained no coating. All three fiber types showed strength degradation beyond 1400 C. Time and temperature of exposure had greater influence on strength degradation than argon pressure. Recrystallization and growth of near stoichiometric SiC grains appears to be the dominant mechanism for the strength degradation.

Oxidation of SiC Fiber-Reinforced SiC Matrix Composites with a BN Interphase

NASA Technical Reports Server (NTRS)

Opila, Elizabeth; Boyd, Meredith K.

2010-01-01

SiC-fiber reinforced SiC matrix composites with a BN interphase were oxidized in reduced oxygen partial pressures of oxygen to simulate the environment for hypersonic vehicle leading edge applications. The constituent fibers as well as composite coupons were oxidized in oxygen partial pressures ranging from 1000 ppm O2 to 5% O2 balance argon. Exposure temperatures ranged from 816 C to 1353 C (1500 F to 2450 F). The oxidation kinetics of the coated fibers were monitored by thermogravimetric analysis (TGA). An initial rapid transient weight gain was observed followed by parabolic kinetics. Possible mechanisms for the transient oxidation are discussed. One edge of the composite coupon seal coat was ground off to simulate damage to the composite which allowed oxygen ingress to the interior of the composite. Oxidation kinetics of the coupons were characterized by scanning electron microscopy since the weight changes were minimal. It was found that sealing of the coupon edge by silica formation occurred. Differences in the amount and morphology of the sealing silica as a function of time, temperature and oxygen partial pressure are discussed. Implications for use of these materials for hypersonic vehicle leading edge materials are summarized.

SiC and Si3N4 Recession Due to SiO2 Scale Volatility Under Combustor Conditions

NASA Technical Reports Server (NTRS)

Smialek, James L.; Robinson, R. Craig; Opila, Elizabeth J.; Fox, Dennis S.; Jacobson, Nathan S.

1999-01-01

SiC and Si3N4 materials were tested under various turbine engine combustion environments, chosen to represent either conventional fuel-lean or fuel-rich mixtures proposed for high speed aircraft. Representative CVD, sintered, and composite materials were evaluated in both furnace and high pressure burner rig exposure. While protective SiO2 scales form in all cases, evidence is presented to support paralinear growth kinetics, i.e. parabolic growth moderated simultaneously by linear volatilization. The volatility rate is dependent on temperature, moisture content, system pressure, and gas velocity. The burner tests were used to map SiO2 volatility (and SiC recession) over a range of temperature, pressure, and velocity. The functional dependency of material recession (volatility) that emerged followed the form: exp(-QIRT) * P(exp x) * v(exp y). These empirical relations were compared to rates predicted from the thermodynamics of volatile SiO and SiO(sub x)H(sub Y) reaction products and a kinetic model of diffusion through a moving, boundary layer. For typical combustion conditions, recession of 0.2 to 2 micron/h is predicted at 1200- 1400C, far in excess of acceptable long term limits.

Direct Transformation of Amorphous Silicon Carbide into Graphene under Low Temperature and Ambient Pressure

PubMed Central

Peng, Tao; Lv, Haifeng; He, Daping; Pan, Mu; Mu, Shichun

2013-01-01

A large-scale availability of the graphene is critical to the successful application of graphene-based electronic devices. The growth of epitaxial graphene (EG) on insulating silicon carbide (SiC) surfaces has opened a new promising route for large-scale high-quality graphene production. However, two key obstacles to epitaxial growth are extremely high requirements for almost perfectly ordered crystal SiC and harsh process conditions. Here, we report that the amorphous SiC (a-Si1−xCx) nano-shell (nano-film) can be directly transformed into graphene by using chlorination method under very mild reaction conditions of relative low temperature (800°C) and the ambient pressure in chlorine (Cl2) atmosphere. Therefore, our finding, the direct transformation of a-Si1−xCx into graphene under much milder condition, will open a door to apply this new method to the large-scale production of graphene at low costs. PMID:23359349

Hot isostatic pressing of SiC particulate reinforced metal matrix composites

DOE Office of Scientific and Technical Information (OSTI.GOV)

Loh, N.L.; Wei, Z.; Xu, Z.

1996-12-31

Two as-cast SiC particulate reinforced A359-based composites were hot isostatically pressed for a fixed length of time but at various pressures (in the range 100--150 MPa) and temperatures (in the range 450--550 C). It was found that HIP treatment generally increased the ductility but reduced the yield stress drastically. The improvement of ductility was attributed to a reduction of the porosity levels. Quantitative image analyses showed that the HIP treatment reduced the porosity levels significantly. It is of interest to observe that increasing HIP temperature is more effective than increasing HIP pressure in terms of improvement in strength and ductility.more » Another interesting observation is that most eutectic Si particles were spheroidized during HIP. The spheroidization of Si was believed to contribute to the improvement of mechanical properties, because fracture initiation of the composites was observed to be related to either the breaking of Si particles or the debonding of Si particles from the nearby SiC particles.« less

Processing of sintered alpha SiC

NASA Technical Reports Server (NTRS)

Storm, R. S.

1984-01-01

Processing methods of sintered alpha SiC for engine applications are developed in a cost effective manner, using a submicron sized powder blended with sintering aids (boron and carbon). The processes for forming a green powder compact, such as dry pressing, cold isostatic pressing and green machining, slip casting, aqueous extrusion, plastic extrusion, and injection molding, are described. Dry pressing is the simplest route to component fabrication, and is carried out at approximately 10,000 psi pressure, while in the cold isostatic method the pressure could go as high as 20,000 psi. Surfactants are added to control settling rates and casting characteristics in the slip casting. The aqueous extrusion process is accomplished by a hydraulic ram forcing the aqueous mixture through a die. The plastic forming processes of extrusion and injection molding offer the potential of greater diversity in shape capacity. The physical properties of sintered alpha SiC (hardness, Young's modulus, shear modulus, and thermal diffusivity) are extensively tested. Corrosion resistance test results of silicon carbide are included.

Thermal Stability of Hi-Nicalon SiC Fiber in Nitrogen and Silicon Environments

NASA Technical Reports Server (NTRS)

Bhatt, R. T.; Garg, A.

1995-01-01

The room temperature tensile strength of uncoated and two types of pyrolytic boron nitride coated (PBN and Si-rich PBN) Hi-Nicalon SiC fibers was determined after 1 to 400 hr heat treatments to 1800 C under N2 pressures of 0.1, 2, and 4 MPa, and under 0.1 Mpa argon and vacuum environments. In addition, strength stability of both uncoated and coated fibers embedded in silicon powder and exposed to 0.1 MPa N2 for 24 hrs at temperatures to 1400 C was investigated. The uncoated and both types of BN coated fibers exposed to N2 for 1 hr showed noticeable strength degradation above 1400 C and 1600 C, respectively. The strength degradation appeared independent of nitrogen pressure, time of heat treatment, and surface coatings. TEM microstructural analysis suggests that flaws created due to SiC grain growth are responsible for the strength degradation. In contact with silicon powder, the uncoated and both types of PBN coated fibers degrade rapidly above 1350 C.

High-efficiency impurity activation by precise control of cooling rate during atmospheric pressure thermal plasma jet annealing of 4H-SiC wafer

NASA Astrophysics Data System (ADS)

Maruyama, Keisuke; Hanafusa, Hiroaki; Ashihara, Ryuhei; Hayashi, Shohei; Murakami, Hideki; Higashi, Seiichiro

2015-06-01

We have investigated high-temperature and rapid annealing of a silicon carbide (SiC) wafer by atmospheric pressure thermal plasma jet (TPJ) irradiation for impurity activation. To reduce the temperature gradient in the SiC wafer, a DC current preheating system and the lateral back-and-forth motion of the wafer were introduced. A maximum surface temperature of 1835 °C within 2.4 s without sample breakage was achieved, and aluminum (Al), phosphorus (P), and arsenic (As) activations in SiC were demonstrated. We have investigated precise control of heating rate (Rh) and cooling rate (Rc) during rapid annealing of P+-implanted 4H-SiC and its impact on impurity activation. No dependence of resistivity on Rh was observed, while increasing Rc significantly decreased resistivity. A minimum resistivity of 0.0025 Ω·cm and a maximum carrier concentration of 2.9 × 1020 cm-3 were obtained at Rc = 568 °C/s.

Smart Sensor Systems for Aerospace Applications: From Sensor Development to Application Testing

NASA Technical Reports Server (NTRS)

Hunter, G. W.; Xu, J. C.; Dungan, L. K.; Ward, B. J.; Rowe, S.; Williams, J.; Makel, D. B.; Liu, C. C.; Chang, C. W.

2008-01-01

The application of Smart Sensor Systems for aerospace applications is a multidisciplinary process consisting of sensor element development, element integration into Smart Sensor hardware, and testing of the resulting sensor systems in application environments. This paper provides a cross-section of these activities for multiple aerospace applications illustrating the technology challenges involved. The development and application testing topics discussed are: 1) The broadening of sensitivity and operational range of silicon carbide (SiC) Schottky gas sensor elements; 2) Integration of fire detection sensor technology into a "Lick and Stick" Smart Sensor hardware platform for Crew Exploration Vehicle applications; 3) Extended testing for zirconia based oxygen sensors in the basic "Lick and Stick" platform for environmental monitoring applications. It is concluded that that both core sensor platform technology and a basic hardware platform can enhance the viability of implementing smart sensor systems in aerospace applications.

Severe accident modeling of a PWR core with different cladding materials

DOE Office of Scientific and Technical Information (OSTI.GOV)

Johnson, S. C.; Henry, R. E.; Paik, C. Y.

2012-07-01

The MAAP v.4 software has been used to model two severe accident scenarios in nuclear power reactors with three different materials as fuel cladding. The TMI-2 severe accident was modeled with Zircaloy-2 and SiC as clad material and a SBO accident in a Zion-like, 4-loop, Westinghouse PWR was modeled with Zircaloy-2, SiC, and 304 stainless steel as clad material. TMI-2 modeling results indicate that lower peak core temperatures, less H 2 (g) produced, and a smaller mass of molten material would result if SiC was substituted for Zircaloy-2 as cladding. SBO modeling results indicate that the calculated time to RCSmore » rupture would increase by approximately 20 minutes if SiC was substituted for Zircaloy-2. Additionally, when an extended SBO accident (RCS creep rupture failure disabled) was modeled, significantly lower peak core temperatures, less H 2 (g) produced, and a smaller mass of molten material would be generated by substituting SiC for Zircaloy-2 or stainless steel cladding. Because the rate of SiC oxidation reaction with elevated temperature H{sub 2}O (g) was set to 0 for this work, these results should be considered preliminary. However, the benefits of SiC as a more accident tolerant clad material have been shown and additional investigation of SiC as an LWR core material are warranted, specifically investigations of the oxidation kinetics of SiC in H{sub 2}O (g) over the range of temperatures and pressures relevant to severe accidents in LWR 's. (authors)« less

Pressure effects on the thermal stability of SiC fibers

NASA Technical Reports Server (NTRS)

Jaskowiak, Martha H.; Dicarlo, James A.

1986-01-01

Commercially available polymer derived SiC fibers were treated at temperatures from 1000 to 2200 C in vacuum and argon gas pressure of 1 and 1360 atm. Effects of gas pressure on the thermal stability of the fibers were determined through property comparison between the pressure treated fibers and vacuum treated fibers. Investigation of the thermal stability included studies of the fiber microstructure, weight loss, grain growth, and tensile strength. The 1360 atm argon gas treatment was found to shift the onset of fiber weight loss from 1200 to above 1500 C. Grain growth and tensile strength degradation were correlated with weight loss and were thus also inhibited by high pressure treatments. Additional heat treatment in 1 atm argon of the fibers initially treated at 1360 atm argon caused further weight loss and tensile strength degradation, thus indicating that high pressure inert gas conditions would be effective only in delaying fiber strength degradation. However, if the high gas pressure could be maintained throughout composite fabrication, then the composites could be processed at higher temperatures.

Ceramic Strain Gages for Use at Temperatures up to 1500 Celsius

NASA Technical Reports Server (NTRS)

Gregory, Otto; Fralick, Gustave (Technical Monitor)

2003-01-01

Indium-tin-oxide (ITO) thin film strain gages were successfully demonstrated at temperatures beyond 1500 C. High temperature static strain tests revealed that the piezoresistive response and electrical stability of the ceramic sensors depended on the thickness of the ITO films comprising the active strain elements. When 2.5 microns-thick ITO films were employed as the active strain elements, the piezoresistive response became unstable at temperatures above 1225 C. In contrast to this, ceramic sensors prepared with 5 microns-thick ITO were stable beyond 1430 C and sensors prepared with 8 microns-thick ITO survived more than 20 hr of operation at 1481 C. Very thick (10 microns) ITo strain gages were extremely stable and responsive at 1528 C. ESCA depth profiles confirmed that an interfacial reaction between the ITO strain gage and alumina substrate was responsible for the high temperature electrical stability observed. Similar improvements in high temperature stability were achieved by doping the active ITO strain elements with aluminum. Several Sic-Sic CMC constant strain beams were instrumented with ITO strain gages and delivered to NASA for testing. Due to the extreme surface roughness of the CMC substrates, new lithography techniques and surface preparation methods were developed. These techniques relied heavily on a combination of Sic and A12O3 cement layers to provide the necessary surface finish for efficient pattern transfer. Micro-contact printing using soft lithography and PDMS stamps was also used to successfully transfer the thin film strain gage patterns to the resist coated CMC substrates. This latter approach has considerable potential for transferring the thin film strain gage patterns to the extremely rough surfaces associated with the CMC's.

Residual stress in thick low-pressure chemical-vapor deposited polycrystalline SiC coatings on Si substrates

NASA Astrophysics Data System (ADS)

Choi, D.; Shinavski, R. J.; Steffier, W. S.; Spearing, S. M.

2005-04-01

Residual stress in thick coatings of polycrystalline chemical-vapor deposited SiC on Si substrates is a key variable that must be controlled if SiC is to be used in microelectromechanical systems. Studies have been conducted to characterize the residual stress level as a function of deposition temperature, Si wafer and SiC coating thickness, and the ratios of methyltrichlorosilane to hydrogen and hydrogen chloride. Wafer curvature was used to monitor residual stress in combination with a laminated plate analysis. Compressive intrinsic (growth) stresses were measured with magnitudes in the range of 200-300MPa; however, these can be balanced with the tensile stress due to the thermal-expansion mismatch to leave near-zero stress at room temperature. The magnitude of the compressive intrinsic stress is consistent with previously reported values of surface stress in combination with the competition between grain-boundary energy and elastic strain energy.

Statistical Analysis of SSMIS Sea Ice Concentration Threshold at the Arctic Sea Ice Edge during Summer Based on MODIS and Ship-Based Observational Data.

PubMed

Ji, Qing; Li, Fei; Pang, Xiaoping; Luo, Cong

2018-04-05

The threshold of sea ice concentration (SIC) is the basis for accurately calculating sea ice extent based on passive microwave (PM) remote sensing data. However, the PM SIC threshold at the sea ice edge used in previous studies and released sea ice products has not always been consistent. To explore the representable value of the PM SIC threshold corresponding on average to the position of the Arctic sea ice edge during summer in recent years, we extracted sea ice edge boundaries from the Moderate-resolution Imaging Spectroradiometer (MODIS) sea ice product (MOD29 with a spatial resolution of 1 km), MODIS images (250 m), and sea ice ship-based observation points (1 km) during the fifth (CHINARE-2012) and sixth (CHINARE-2014) Chinese National Arctic Research Expeditions, and made an overlay and comparison analysis with PM SIC derived from Special Sensor Microwave Imager Sounder (SSMIS, with a spatial resolution of 25 km) in the summer of 2012 and 2014. Results showed that the average SSMIS SIC threshold at the Arctic sea ice edge based on ice-water boundary lines extracted from MOD29 was 33%, which was higher than that of the commonly used 15% discriminant threshold. The average SIC threshold at sea ice edge based on ice-water boundary lines extracted by visual interpretation from four scenes of the MODIS image was 35% when compared to the average value of 36% from the MOD29 extracted ice edge pixels for the same days. The average SIC of 31% at the sea ice edge points extracted from ship-based observations also confirmed that choosing around 30% as the SIC threshold during summer is recommended for sea ice extent calculations based on SSMIS PM data. These results can provide a reference for further studying the variation of sea ice under the rapidly changing Arctic.

Tweens feel the burn: "salt and ice challenge" burns.

PubMed

Roussel, Lauren O; Bell, Derek E

2016-05-01

To review our institution's experience with frostbite injury secondary to "salt and ice challenge" (SIC) participation. We conducted a retrospective analysis of intentional freezing burns from 2012 to 2014. Demographics, depth and location of burn, total body surface area of burn, treatment, time to wound healing, length of stay, complications, and motives behind participation were analyzed. Five patients were seen in the emergency department for intentional freezing burns that resulted from SIC (all females; mean age: 12.3 years; range age: 10.0-13.2 years). Mean total body surface area was 0.408%. Salt and ice was in contact with skin for >10 min for two patients, >20 min for two patients, and an unknown duration for one patient. Complications included pain and burn scar dyschromia. Four patients cited peer pressure and desire to replicate SIC as seen on the Internet as their motivation in attempting the challenge. SIC has become a popular, self-harming behavior among youths. Increased public education, and provider and parent awareness of SIC are essential to address this public health concern.

Fabrication of cast particle-reinforced metals via pressure infiltration

NASA Technical Reports Server (NTRS)

Klier, E. M.; Mortensen, A.; Cornie, J. A.; Flemings, M. C.

1991-01-01

A new casting process for fabrication of particle-reinforced metals is presented whereby a composite of particulate reinforcing phase in metal is first produced by pressure infiltration. This composite is then diluted in additional molten metal to obtain the desired reinforcement volume fraction and metal composition. This process produces a pore-free as-cast particulate metal-matrix composite. This process is demonstrated for fabrication of magnesium-matrix composites containing SiC reinforcements of average diameter 30, 10 and 3 microns. It is compared with the compocasting process, which was investigated as well for similar SiC particles in Mg-10 wt pct Al, and resulted in unacceptable levels of porosity in the as-cast composite.

Surface and Interface Study of PdCr/SiC Schottky Diode Gas Sensor Annealed at 425 C

NASA Technical Reports Server (NTRS)

Chen, Liang-Yu; Hunter, Gary W.; Neudeck, Philip G.; Knight, Dak

1998-01-01

The surface and interface properties of Pd(sub 0.9)Cr(sub 0.1/SiC Schottky diode gas sensor both before and after annealing are investigated using Auger Electron Spectroscopy (AES), Scanning Electron Microscopy (SEM), and Energy Dispersive Spectroscopy (EDS). At room temperature the alloy reacted with SiC and formed Pd(sub x)Si only in a very narrow interfacial region. After annealing for 250 hours at 425 deg. C, the surface of the Schottky contact area has much less silicon and carbon contamination than that found on the surface of an annealed Pd/SiC structure. Pd(sub x)Si formed at a broadened interface after annealing, but a significant layer of alloy film is still free of silicon and carbon. The chromium concentration with respect to palladium is quite uniform down to the deep interface region. A stable catalytic surface and a clean layer of Pd(sub 0.9)Cr(sub 0.1) film are likely responsible for significantly improved device sensitivity.

Surface and Interface Properties of PdCr/SiC Schottky Diode Gas Sensor Annealed at 425 C

NASA Technical Reports Server (NTRS)

Chen, Liang-Yu; Hunter, Gary W.; Neudeck, Philip G.; Knight, Dak

1998-01-01

The surface and interface properties of Pd(0.9,)Cr(0.1)/SiC Schottky diode gas sensors both before and after annealing are investigated using Auger electron spectroscopy (AES), scanning electron microscopy (SEM), and energy dispersive spectroscopy (EDS). At room temperature the alloy reacted with SiC and formed Pd,Si only in a very narrow interfacial region. After annealing for 250 h ,It 425 C, the surface of the Schottky contact area his much less silicon and carbon contamination than that found on the surface of an annealed Pd/SiC structure. Palladium silicides (Pd(x)Si) formed at a broadened interface after annealing, but a significant layer of alloy film is still free of silicon and carbon. The chromium concentration with respect to palladium is quite uniform down to the deep interface region. A stable catalytic surface and a clean layer of Pd(0.9)Cr(0.1) film are likely responsible for significantly improved device sensitivity.

Surface and Interface Properties of PdCr/SiC Schottky Diode Gas Sensor Annealed at 425 C

NASA Technical Reports Server (NTRS)

Chen, Liang-Yu; Hunter, Gary W.; Neudeck, Philip G.; Knight, Dak

1998-01-01

The surface and interface properties of Pd(0.9)Cr(0.1)/SiC Schottky diode gas sensors both before and after annealing are investigated using Auger Electron Spectroscopy (AES), Scanning Electron Microscopy (SEM), and Energy Dispersive Spectroscopy (EDS). At room temperature the alloy reacted with SiC and formed Pd(x)Si only in a very narrow interfacial region. After annealing for 250 hours at 425 C, the surface of the Schottky contact area has much less silicon and carbon contamination than that found on the surface of an annealed Pd/SiC structure. Palladium silicides (Pd(x)Si) formed at a broadened interface after annealing, but a significant layer of alloy film is still free of silicon and carbon. The chromium concentration with respect to palladium is quite uniform down to the deep interface region. A stable catalytic surface and a clean layer of Pd(0.9)Cr(0.1) film are likely responsible for significantly improved device sensitivity.

Novel Approach for Positioning Sensor Lead Wires on SiC-Based Monolithic Ceramic and FRCMC Components/Subcomponents Having Flat and Curved Surfaces

NASA Technical Reports Server (NTRS)

Kiser, J. Douglas; Singh, Mrityunjay; Lei, Jin-Fen; Martin, Lisa C.

1999-01-01

A novel attachment approach for positioning sensor lead wires on silicon carbide-based monolithic ceramic and fiber reinforced ceramic matrix composite (FRCMC) components has been developed. This approach is based on an affordable, robust ceramic joining technology, named ARCJoinT, which was developed for the joining of silicon carbide-based ceramic and fiber reinforced composites. The ARCJoinT technique has previously been shown to produce joints with tailorable thickness and good high temperature strength. In this study, silicon carbide-based ceramic and FRCMC attachments of different shapes and sizes were joined onto silicon carbide fiber reinforced silicon carbide matrix (SiC/ SiC) composites having flat and curved surfaces. Based on results obtained in previous joining studies. the joined attachments should maintain their mechanical strength and integrity at temperatures up to 1350 C in air. Therefore they can be used to position and secure sensor lead wires on SiC/SiC components that are being tested in programs that are focused on developing FRCMCs for a number of demanding high temperature applications in aerospace and ground-based systems. This approach, which is suitable for installing attachments on large and complex shaped monolithic ceramic and composite components, should enhance the durability of minimally intrusive high temperature sensor systems. The technology could also be used to reinstall attachments on ceramic components that were damaged in service.

Quantification Of 4H- To 3C-Polymorphism In Silicon Carbide (SiC) Epilayers And An Investigation Of Recombination-Enhanced Dislocation Motion In SiC By Optical Emission Microscopy (Oem) Techniques

NASA Technical Reports Server (NTRS)

Speer, Kevin M.

2004-01-01

Environments that impose operational constraints on conventional silicon-(Si) based semiconductor devices frequently appear in military- and space-grade applications. These constraints include high temperature, high power, and high radiation environments. Silicon carbide (SiC), an alternative type of semiconductor material, has received abundant research attention in the past few years, owing to its radiation-hardened properties as well as its capability to withstand high temperatures and power levels. However, the growth and manufacture of SiC devices is still comparatively immature, and there are severe limitations in present crystal growth and device fabrication processes. Among these limitations is a variety of crystal imperfections known as defects. These imperfections can be point defects (e.g., vacancies and interstitials), line defects (e.g., edge and screw dislocations), or planar defects (e.g., stacking faults and double-positioning boundaries). All of these defects have been experimentally shown to be detrimental to the performance of electron devices made from SiC. As such, it is imperative that these defects are significantly reduced in order for SiC devices to become a viable entity in the electronics world. The NASA Glenn High Temperature Integrated Electronics & Sensors Team (HTIES) is working to identify and eliminate these defects in SiC by implementing improved epitaxial crystal growth procedures. HTIES takes two-inch SiC wafers and etches patterns, producing thousands of mesas into each wafer. Crystal growth is then carried out on top of these mesas in an effort to produce films of improved quality-resulting in electron devices that demonstrate superior performance-as well as fabrication processes that are cost-effective, reliable, and reproducible. In this work, further steps are taken to automate HTIES' SiC wafer inspection system. National Instruments LabVIEW image processing and pattern recognition routines are developed that are capable of quantifying and mapping defects on both the substrate and mesa surfaces, and of quantifying polymorphic changes in the grown materials. In addition, an optical emission microscopy (OEM) system is developed that will facilitate comprehensive study of recombination-enhanced dislocation motion (REDM).

SiC-Based Schottky Diode Gas Sensors

NASA Technical Reports Server (NTRS)

Hunter, Gary W.; Neudeck, Philip G.; Chen, Liang-Yu; Knight, Dak; Liu, Chung-Chiun; Wu, Quing-Hai

1997-01-01

Silicon carbide based Schottky diode gas sensors are being developed for high temperature applications such as emission measurements. Two different types of gas sensitive diodes will be discussed in this paper. By varying the structure of the diode, one can affect the diode stability as well as the diode sensitivity to various gases. It is concluded that the ability of SiC to operate as a high temperature semiconductor significantly enhances the versatility of the Schottky diode gas sensing structure and will potentially allow the fabrication of a SiC-based gas sensor arrays for versatile high temperature gas sensing applications.

Carbothermal synthesis of coatings on silicon carbide fibers

NASA Astrophysics Data System (ADS)

Chen, Linlin

Four kinds of protective coatings---carbide derived carbon (CDC), boron nitride (BN), Al-O-N and BN doped Al-O-N (BAN) have been successfully synthesized on the surface of SiC fibers on the target to enhance the mechanical properties and oxidation resistance of the coated SiC fibers for the application as the reinforcements in the Ceramic Matrix Composites (CMCs) in the high temperatures. First of all, CDC coatings have been uniformly produced on Tyranno ZMI SiC fibers with good thickness control within nanometer accuracy by the chlorination in the temperature range of 550--700°C at atmospheric pressure. Kinetics of the carbon coating growth on the fibers has been systematically studied and thus a good foundation was set up for the further coating synthesis. BN coatings have been synthesized on the surface of SiC powders, fibers and fabrics by a novel carbothermal nitridation method. Non-bridging has been achieved in the BN-coated fiber tows by the nitridation in ammonia at atmospheric pressure in a temperature below 1200°C, which is lower compared to the traditional BN synthesis method and does not cause the degradation of the coated-fibers. BN coatings on the carbon nanotubes have also been formed and unlike the common methods, no additional dopant (such as metal catalyst) is introduced into the system during the BN coatings syntheses, thus the contamination of the final product is avoided. A novel Al-O-N coating has been explored with the most impressive point is that a more than 65% improvement in the tensile strength (up to ˜5.1GPa) and a three-time increase in the Weibull modulus compared to the as-received fibers are resulted by the formation of 200nm Al-O-N coating on the SiC fibers. It exceeds the strength of all other small diameter SiC fibers reported in the literature. Furthermore, BAN coating has also been produced on the surface of SiC fibers and about 20% enhancement in mechanical strength is achieved compared to that of the original fibers. Oxidation experiments of the SiC fibers with four kinds of coatings under 1000°C and 1200°C in air have been carried out and better oxidation resistance of the coated fibers are presented compared to the as-received fibers. In summary, exploration of various coatings synthesis for the SiC fibers has been successfully conducted in this work. The coating material suitable for the SiC fibers should be chosen properly according to its specific application in the CFCCs and well thickness-control to meet the corresponding requirements.

Oxidation of SiC/BN/SiC Composites in Reduced Oxygen Partial Pressures

NASA Technical Reports Server (NTRS)

Opila, Elizabeth J.; Boyd, Meredith

2010-01-01

SiC fiber-reinforced SiC composites with a BN interphase are proposed for use as leading edge structures of hypersonic vehicles. The durability of these materials under hypersonic flight conditions is therefore of interest. Thermogravimetric analysis was used to characterize the oxidation kinetics of both the constituent fibers and composite coupons at four temperatures: 816, 1149, 1343, and 1538 C (1500, 2100, 2450, and 2800 F) and in oxygen partial pressures between 5% and 0.1% (balance argon) at 1 atm total pressure. One edge of the coupons was ground off so the effects of oxygen ingress into the composite could be monitored by post-test SEM and EDS. Additional characterization of the oxidation products was conducted by XPS and TOF-SIMS. Under most conditions, the BN oxidized rapidly, leading to the formation of borosilicate glass. Rapid initial oxidation followed by volatilization of boria lead to protective oxide formation and further oxidation was slow. At 1538C in 5% oxygen, both the fibers and coupons exhibited borosilicate glass formation and bubbling. At 1538C in 0.1% oxygen, active oxidation of both the fibers and the composites was observed leading to rapid SiC degradation. BN oxidation at 1538C in 0.1% oxygen was not significant.

SiC and Si3N4 Recession Due to SiO2 Scale Volatility Under Combustor Conditions

NASA Technical Reports Server (NTRS)

Smialek, James L.; Robinson, Raymond C.; Opila, Elizabeth J.; Fox, Dennis S.; Jacobson, Nathan S.

1999-01-01

Silicon carbide (SiC) and Si3N4 materials were tested in various turbine engine combustion environments chosen to represent either conventional fuel-lean or fuel-rich mixtures proposed for high-speed aircraft. Representative chemical vapor-deposited (CVD), sintered, and composite materials were evaluated by furnace and high-pressure burner rig exposures. Although protective SiO2 scales formed in all cases, the evidence presented supports a model based on paralinear growth kinetics (i.e., parabolic growth moderated simultaneously by linear volatilization). The volatility rate is dependent on temperature, moisture content, system pressure, and gas velocity. The burner tests were thus used to map SiO2 volatility (and SiC recession) over a range of temperatures, pressures, and velocities. The functional dependency of material recession (volatility) that emerged followed the form A[exp(-Q / RT)](P(sup x)v(sup y). These empirical relations were compared with rates predicted from the thermodynamics of volatile SiO and SiOxHy reaction products and a kinetic model of diffusion through a moving boundary layer. For typical combustion conditions, recession of 0.2 to 2 micrometers/hr is predicted at 1200 to 1400 C, far in excess of acceptable long-term limits.

CaO-Al2O3 glass-ceramic as a joining material for SiC based components: A microstructural study of the effect of Si-ion irradiation

NASA Astrophysics Data System (ADS)

Casalegno, Valentina; Kondo, Sosuke; Hinoki, Tatsuya; Salvo, Milena; Czyrska-Filemonowicz, Aleksandra; Moskalewicz, Tomasz; Katoh, Yutai; Ferraris, Monica

2018-04-01

The aim of this work was to investigate and discuss the microstructure and interface reaction of a calcia-alumina based glass-ceramic (CA) with SiC. CA has been used for several years as a glass-ceramic for pressure-less joining of SiC based components. In the present work, the crystalline phases in the CA glass-ceramic and at the CA/SiC interface were investigated and the absence of any detectable amorphous phase was assessed. In order to provide a better understanding of the effect of irradiation on the joining material and on the joints, Si ion irradiation was performed both on bulk CA and CA joined SiC. CA glass-ceramic and CA joined SiC were both irradiated with 5.1 MeV Si2+ ions to 3.3 × 1020 ions/m2 at temperatures of 400 and 800 °C at DuET facility, Kyoto University. This corresponds to a damage level of 5 dpa for SiC averaged over the damage range. This paper presents the results of a microstructural analysis of the irradiated samples as well as an evaluation of the dimensional stability of the CA glass-ceramic and its irradiation temperature and/or damage dependence.

High Temperature Wireless Communication And Electronics For Harsh Environment Applications

NASA Technical Reports Server (NTRS)

Hunter, G. W.; Neudeck, P. G.; Beheim, G. M.; Ponchak, G. E.; Chen, L.-Y

2007-01-01

In order for future aerospace propulsion systems to meet the increasing requirements for decreased maintenance, improved capability, and increased safety, the inclusion of intelligence into the propulsion system design and operation becomes necessary. These propulsion systems will have to incorporate technology that will monitor propulsion component conditions, analyze the incoming data, and modify operating parameters to optimize propulsion system operations. This implies the development of sensors, actuators, and electronics, with associated packaging, that will be able to operate under the harsh environments present in an engine. However, given the harsh environments inherent in propulsion systems, the development of engine-compatible electronics and sensors is not straightforward. The ability of a sensor system to operate in a given environment often depends as much on the technologies supporting the sensor element as the element itself. If the supporting technology cannot handle the application, then no matter how good the sensor is itself, the sensor system will fail. An example is high temperature environments where supporting technologies are often not capable of operation in engine conditions. Further, for every sensor going into an engine environment, i.e., for every new piece of hardware that improves the in-situ intelligence of the components, communication wires almost always must follow. The communication wires may be within or between parts, or from the engine to the controller. As more hardware is added, more wires, weight, complexity, and potential for unreliability is also introduced. Thus, wireless communication combined with in-situ processing of data would significantly improve the ability to include sensors into high temperature systems and thus lead toward more intelligent engine systems. NASA Glenn Research Center (GRC) is presently leading the development of electronics, communication systems, and sensors capable of prolonged stable operation in harsh 500C environments. This has included world record operation of SiC-based transistor technology (including packaging) that has demonstrated continuous electrical operation at 500C for over 2000 hours. Based on SiC electronics, development of high temperature wireless communication has been on-going. This work has concentrated on maturing the SiC electronic devices for communication purposes as well as the passive components such as resistors and capacitors needed to enable a high temperature wireless system. The objective is to eliminate wires associated with high temperature sensors which add weight to a vehicle and can be a cause of sensor unreliability. This paper discusses the development of SiC based electronics and wireless communications technology for harsh environment applications such as propulsion health management systems and in Venus missions. A brief overview of the future directions in sensor technology is given including maturing of near-room temperature "Lick and Stick" leak sensor technology for possible implementation in the Crew Launch Vehicle program. Then an overview of high temperature electronics and the development of high temperature communication systems is presented. The maturity of related technologies such as sensor and packaging will also be discussed. It is concluded that a significant component of efforts to improve the intelligence of harsh environment operating systems is the development and implementation of high temperature wireless technology

Effect of consolidation techniques on the properties of Al matrix composite reinforced with nano Ni-coated SiC

NASA Astrophysics Data System (ADS)

Abolkassem, Shimaa A.; Elkady, Omayma A.; Elsayed, Ayman H.; Hussein, Walaa A.; Yehya, Hosam M.

2018-06-01

Al /Ni-SiC composite was prepared via powder metallurgy technique. SiC particles were coated with 10 wt% nano nickel by electroless deposition, then mixed by three percents (5, 10 and 15 wt%) with Al powder in a ball mill using 10:1 ball to powder ratio for 5 h. Three types of sintering techniques were used to prepare the composite. Uniaxial cold compacted samples were sintered in a vacuum furnace at 600 °C for 1 h. The second group was the vacuum sintered samples which were post-processed by hot isostatic press (HIP) at 600 °C for 1hr under the pressure of 190 MPa. The third group was the hot pressed samples that were consolidated at 550 °C under the uniaxial pressure of 840 MPa. The results showed that the hot pressed samples have the highest densification values (97-100%), followed by the HIP samples (94-98%), then come the vacuum sintered ones (92-96%). X-ray diffraction analysis (XRD) indicated the presence of Al and Al3Ni, which means that all SiC particles were encapsulated with nickel as short peaks for SiC were observed. Hardness results revealed that HIP samples have the highest hardness values. The magnetization properties were improved by increasing SiC/Ni percent, and HIP samples showed the highest magnetization parameter values.

High-pressure phase transition in silicon carbide under shock loading using ultrafast x-ray diffraction

NASA Astrophysics Data System (ADS)

Tracy, S. J.; Smith, R. F.; Wicks, J. K.; Fratanduono, D. E.; Gleason, A. E.; Bolme, C.; Speziale, S.; Appel, K.; Prakapenka, V. B.; Fernandez Panella, A.; Lee, H. J.; MacKinnon, A.; Eggert, J.; Duffy, T. S.

2017-12-01

The behavior of silicon carbide (SiC) under shock loading was investigated through a series of time-resolved pump-probe x-ray diffraction (XRD) measurements. SiC is found at impact sites and has been put forward as a possible constituent in the proposed class of extra-solar planets known as carbon planets. Previous studies have used wave profile measurements to identify a phase transition under shock loading near 1 Mbar, but crystal structure information was not obtained. We have carried out an in situ XRD study of shock-compressed SiC using the Matter in Extreme Conditions instrument of the Linac Coherent Light Source. The femtosecond time resolution of the x-ray free electron laser allows for the determination of time-dependent atomic arrangements during shock loading and release. Two high-powered lasers were used to generate ablation-driven compression waves in the samples. Time scans were performed using the same drive conditions and nominally identical targets. For each shot in a scan, XRD data was collected at a different probe time after the shock had entered the SiC. Probe times extended up to 40 ns after release. Scans were carried out for peak pressures of 120 and 185 GPa. Our results demonstrate that SiC transforms directly from the ambient tetrahedrally-coordinated phase to the octahedral B1 structure on the nanosecond timescale of laser-drive experiments and reverts to the tetrahedrally coordinated ambient phase within nanoseconds of release. The data collected at 120 GPa exhibit diffraction peaks from both compressed ambient phase and transformed B1 phase, while the data at 185 GPa show a complete transformation to the B1 phase. Densities determined from XRD peaks are in agreement with an extrapolation of previous continuum data as well as theoretical predictions. Additionally, a high degree of texture was retained in both the high-pressure phase as well as on back transformation. Two-dimensional fits to the XRD data reveal details of the orientational relationships between the low- and high-pressure phases that can be interpreted to provide information about transformation pathways between tetrahedral and octahedral coordination structures. We acknowledge support for this work from SLAC National Accelerator Laboratory, Lawrence Livermore National Laboratory, and Los Alamos National Laboratory.

Effect of process conditions and chemical composition on the microstructure and properties of chemically vapor deposited SiC, Si, ZnSe, ZnS and ZnS(x)Se(1-x)

NASA Technical Reports Server (NTRS)

Pickering, Michael A.; Taylor, Raymond L.; Goela, Jitendra S.; Desai, Hemant D.

1992-01-01

Subatmospheric pressure CVD processes have been developed to produce theoretically dense, highly pure, void-free and large area bulk materials, SiC, Si, ZnSe, ZnS and ZnS(x)Se(1-x). These materials are used for optical elements, such as mirrors, lenses and windows, over a wide spectral range from the VUV to the IR. We discuss the effect of CVD process conditions on the microstructure and properties of these materials, with emphasis on optical performance. In addition, we discuss the effect of chemical composition on the properties of the composite material ZnS(x)Se(1-x). We first present a general overview of the bulk CVD process and the relationship between process conditions, such as temperature, pressure, reactant gas concentration and growth rate, and the microstructure, morphology and properties of CVD-grown materials. Then we discuss specific results for CVD-grown SiC, Si, ZnSe, ZnS and ZnS(x)Se(1-x).

Evaluation of low-cost aluminum composites for aircraft engine structural applications

NASA Technical Reports Server (NTRS)

Mcdanels, D. L.; Signorelli, R. A.

1983-01-01

Panels of discontinuous SiC composites, with several aluminum matrices, were fabricated and evaluated. Modulus, yield strength and tensile strength results indicated that the properties of composites containing SiC whisker, nodule or particulate reinforcements were similar. The modulus of the composites was controlled by the volume percentage of the SiC reinforcement content, while the strength and ductility were controlled by both the reinforcement content and the matrix alloy. The feasibility of fabricating structural shapes by both wire performs and direct casting was demonstrated for Al2O3/Al composites. The feasibility of fabricating high performance composites into structural shapes by low pressure hot molding was demonstrated for B4C-coated B/Al composites.

Microstructure and hardness of the Cu-SiC and Cu-diamond composites produced by vacuum hot pressing

NASA Astrophysics Data System (ADS)

Krishna, S. Chenna; Vikram, T.; Viswanath, S.; Subramanian, P. K.; Janardhana Reddy, J.

2018-03-01

In the present investigation, Cu-SiC and Cu-diamond composites with different volume percent of reinforcements were produced by vacuum hot pressing. Copper powder with different amount of SiC and diamond were hot pressed at 1000°C for 0.5 h at an applied pressure of 32 MPa. The achieved sintered density of the composites was in the range of 94-98 %. The sintered density decreased with an increase in the amount of SiC and diamond. Hardness of the composites improved with an increase in the volume percent of the reinforcements. Hardness of the Cu-30 vol.% diamond and Cu-30vol. % SiC composites was 88 VHN and 104 VHN, respectively.

High Pressure X-Ray Diffraction Studies of Nanocrystalline Materials

NASA Technical Reports Server (NTRS)

Palosz, B.; Stel'makh, S.; Grzanka, E.; Gierlotka, S.; Palosz, W.

2004-01-01

Experimental evidence obtained for a variety of nanocrystalline materials suggest that the crystallographic structure of a very small size particle deviates from that in the bulk crystals. In this paper we show the effect of the surface of nanocrystals on their structure by the analysis of generation and distribution of macro- and micro-strains at high pressures and their dependence on the grain size in nanocrystalline powders of Sic. We studied the structure of Sic nanocrystals by in-situ high-pressure powder diffraction technique using synchrotron and neutron sources and hydrostatic or isostatic pressure conditions. The diffraction measurements were done in HASYLAB at DESY using a Diamond Anvil Cell (DAC) in the energy dispersive geometry in the diffraction vector range up to 3.5 - 4/A and under pressures up to 50 GPa at room temperature. In-situ high pressure neutron diffraction measurements were done at LANSCE in Los Alamos National Laboratory using the HIPD and HIPPO diffractometers with the Paris-Edinburgh and TAP-98 cells, respectively, in the diffraction vector range up to 26 Examination of the response of the material to external stresses requires nonstandard methodology of the materials characterization and description. Although every diffraction pattern contains a complete information on macro- and micro-strains, a high pressure experiment can reveal only those factors which contribute to the characteristic diffraction patterns of the crystalline phases present in the sample. The elastic properties of powders with the grain size from several nm to micrometers were examined using three methodologies: (l), the analysis of positions and widths of individual Bragg reflections (used for calculating macro- and micro-strains generated during densification) [I], (2). the analysis of the dependence of the experimental apparent lattice parameter, alp, on the diffraction vector Q [2], and (3), the atomic Pair Distribution Function (PDF) technique [3]. The results of our studies show, that Sic nanocrystals have the features of two phases, each with its distinct elastic properties. and under pressures up to 8 GPa.

Manufacture of dense sintered bodies containing silicon nitride

NASA Technical Reports Server (NTRS)

Hirota, K.; Hasegawa, Y.; Ogura, K.; Yashima, Y.

1985-01-01

Sintered bodies containing 1-32.5 Si oxide and 1.5 wt.% SiC (Si oxide/SiC wt. ratio 3/2) are prepared and kept in a 10-3000 kg/2 sq. cm. N (g) atmosphere at 1500-2300 degrees, while simultaneously maintaining the CO (g) partial pressure around the body lower than the nitrogenation equil. pressure to give a dense sintered body. The prepared dense sintered body has high strength at high temperatures. Thus, SiC 40, oxide 30 and Si3N4 30 wt% were fired to a body which was kept in 1500 kg/sq. cm. N (g) for 20 h at 2000 degrees to give a dense sintered body having high bending strength at high temperatures.

Comparison of the dynamic fatigue behavior of two monolithic SiC and an Al{sub 2}O{sub 3}/SiC composite

DOE Office of Scientific and Technical Information (OSTI.GOV)

Breder, K.; Tennery, V.J.

1994-09-01

Two monolithic silicon carbides, NT230 siliconized SiC from Norton Saint Gobain and sintered {beta}-SiC from Coors, and a silicon carbide particulate reinforced alumina ceramic composite from Lanxide, which all are candidate materials for pressurized heat exchangers in coal-fired power plants have been evaluated. The fast fracture flexure strength was measured as a function of temperature. All candidate materials retained a sufficient strength level up to 1400C. The susceptibility to slow crack growth (SCG) was evaluated by the dynamic fatigue method at 1100C and 1400C. None of the materials exhibited SCG at 1100C. At 1400C the siliconized SiC ceramic showed limitedmore » SCG and the composite ceramic exhibited creep damage when stressed to 50% of fast fracture strength at the intermediate and slow stressing rates. This prevented the evaluation of the SCG properties of this material at 1400C. Fractography supported the mechanical observations and with the exception of the specimens which exhibited creep damage, only the siliconized SiC showed a small SCG damage zone at long times at 1400C.« less

Effect of SiC Content on the Ablation and Oxidation Behavior of ZrB2-Based Ultra High Temperature Ceramic Composites

PubMed Central

Hu, Ping; Gui, Kaixuan; Yang, Yang; Dong, Shun; Zhang, Xinghong

2013-01-01

The ablation and oxidation of ZrB2-based ultra high temperature ceramic (UHTC) composites containing 10%, 15% and 30% v/v SiC were tested under different heat fluxes in a high frequency plasma wind tunnel. Performance was significantly affected by the surface temperature, which was strongly dependent on the composition. Composites containing 10% SiC showed the highest surface temperature (>2300 °C) and underwent a marked degradation under both conditions. In contrast, composites with 30% SiC exhibited the lowest surface temperature (<2000 °C) and demonstrated excellent ablation resistance. The surface temperature of UHTCs in aerothermal testing was closely associated with the dynamic evolution of the surface and bulk oxide properties, especially for the change in chemical composition on the exposed surface, which was strongly dependent on the material composition and testing parameters (i.e., heat flux, enthalpy, pressure and test time), and in turn affected its oxidation performance. PMID:28809239

Hot corrosion of ceramic engine materials

NASA Technical Reports Server (NTRS)

Fox, Dennis S.; Jacobson, Nathan S.; Smialek, James L.

1988-01-01

A number of commercially available SiC and Si3N4 materials were exposed to 1000 C in a high velocity, pressurized burner rig as a simulation of a turbine engine environment. Sodium impurities added to the burner flame resulted in molten Na2SO4 deposition, attack of the SiC and Si4N4 and formation of substantial Na2O-x(SiO2) corrosion product. Room temperature strength of the materials decreased. This was a result of the formation of corrosion pits in SiC, and grain boundary dissolution and pitting in Si3N4. Corrosion regimes for such Si-based ceramics have been predicted using thermodynamics and verified in rig tests of SiO2 coupons. Protective mullite coatings are being investigated as a solution to the corrosion problem for SiC and Si3N4. Limited corrosion occurred to cordierite (Mg2Al4Si5O18) but some cracking of the substrate occurred.

Effect of SiC Content on the Ablation and Oxidation Behavior of ZrB₂-Based Ultra High Temperature Ceramic Composites.

PubMed

Hu, Ping; Gui, Kaixuan; Yang, Yang; Dong, Shun; Zhang, Xinghong

2013-04-29

The ablation and oxidation of ZrB₂-based ultra high temperature ceramic (UHTC) composites containing 10%, 15% and 30% v/v SiC were tested under different heat fluxes in a high frequency plasma wind tunnel. Performance was significantly affected by the surface temperature, which was strongly dependent on the composition. Composites containing 10% SiC showed the highest surface temperature (>2300 °C) and underwent a marked degradation under both conditions. In contrast, composites with 30% SiC exhibited the lowest surface temperature (<2000 °C) and demonstrated excellent ablation resistance. The surface temperature of UHTCs in aerothermal testing was closely associated with the dynamic evolution of the surface and bulk oxide properties, especially for the change in chemical composition on the exposed surface, which was strongly dependent on the material composition and testing parameters ( i.e. , heat flux, enthalpy, pressure and test time), and in turn affected its oxidation performance.

Paralinear Oxidation of CVD SiC in Simulated Fuel-Rich Combustion

NASA Technical Reports Server (NTRS)

Fox, Dennis S.; Opila, Elizabeth J.; Hann, Raiford E.

2000-01-01

The oxidation kinetics of CVD SiC were measured by thermogravimetric analysis (TGA) in a 4H2 (central dot) 12H2O (central dot) 10CO (central dot) 7CO2 (central dot) 67N2 gas mixture flowing at 0.44 cm/s at temperatures between 1300 and 1450 C in fused quartz furnace tubes at I atm total pressure. The SiC was oxidized to form solid SiO2. At less than or = 1350 C, the SiO2 was in turn volatilized. Volatilization kinetics were consistent with the thermodynamic predictions based on SiO formation. These two simultaneous reactions resulted in overall paralinear kinetics. A curve fitting technique was used to determine the linear and parabolic rate constants from the paralinear kinetic data. Volatilization of the protective SiO2 scale resulted in accelerated consumption of SiC. Recession rates under conditions more representative of actual combustors were estimated from the furnace data.

(abstract) Transmission Electron Microscopy of Al(sub x)Ga(sub 1-x)N/SiC Multilayer Structures Grown on Sapphire Substrates

NASA Technical Reports Server (NTRS)

Pike, W. T.; George, T.; Khan, M. A.; Kuznia, J. N.

1994-01-01

The potential of wide-band-gap III-V nitrides as ultraviolet sensors and light emitters has prompted an increasing amount of work recently, including the fabrication of the first UV sensors from as-deposited single crystal GaN. We have used high resolution transmission electron microscopy (TEM) to study the microstructure of two novel developments of wide-band-gap III-V nitrides: the growth of ultra-short period GaN/AlN superlattices; and the incorporation of SiC layers into Al(sub x)Ga(sub 1-x)N structures. By varying the relative periods in a GaN/AlN superlattice, the band gap of the composite can be tailored to lie between the elemental values of 365 nm for GaN and 200 nm for AlN. The group IV semiconductor, SiC, has a wide band-gap and has a close lattice match (less than 3 %) to Al(sub x)Ga(sub 1-x)N for growth on the basal plane. Demonstration of epitaxial growth for Al(sub x)Ga(sub 1-x)N/SiC multilayers would introduce a wide band-gap analog to the already existing family of III-V and Si(sub 1-x)Ge(sub x) heteroepitaxial growth systems. Although good quality growth of GaN on SiC substrates has been demonstrated, Al(sub x)Ga(sub 1-x)N/SiC multilayer structures have never been grown and the interfacial structure is unknown.

Atmospheric forcing of sea ice anomalies in the Ross Sea Polynya region

NASA Astrophysics Data System (ADS)

Dale, Ethan; McDonald, Adrian; Rack, Wolfgang

2016-04-01

Despite warming trends in global temperatures, sea ice extent in the southern hemisphere has shown an increasing trend over recent decades. Wind-driven sea ice export from coastal polynyas is an important source of sea ice production. Areas of major polynyas in the Ross Sea, the region with largest increase in sea ice extent, have been suggested to produce the vast amount of the sea ice in the region. We investigate the impacts of strong wind events on polynyas and the subsequent sea ice production. We utilize Bootstrap sea ice concentration (SIC) measurements derived from satellite based, Special Sensor Microwave Imager (SSM/I) brightness temperature images. These are compared with surface wind measurements made by automatic weather stations of the University of Wisconsin-Madison Antarctic Meteorology Program. Our analysis focusses on the winter period defined as 1st April to 1st November in this study. Wind data was used to classify each day into characteristic regimes based on the change of wind speed. For each regime, a composite of SIC anomaly was formed for the Ross Sea region. We found that persistent weak winds near the edge of the Ross Ice Shelf are generally associated with positive SIC anomalies in the Ross Sea polynya area (RSP). Conversely we found negative SIC anomalies in this area during persistent strong winds. By analyzing sea ice motion vectors derived from SSM/I brightness temperatures, we find significant sea ice motion anomalies throughout the Ross Sea during strong wind events. These anomalies persist for several days after the strong wing event. Strong, negative correlations are found between SIC within the RSP and wind speed indicating that strong winds cause significant advection of sea ice in the RSP. This rapid decrease in SIC is followed by a more gradual recovery in SIC. This increase occurs on a time scale greater than the average persistence of strong wind events and the resulting Sea ice motion anomalies, highlighting the production of new sea ice through thermodynamic processes.

Processing and properties of SiC whisker reinforced Si sub 3 N sub 4 ceramic matrix composites

DOE Office of Scientific and Technical Information (OSTI.GOV)

Nunn, S.D.

1991-01-01

Silicon carbide whiskers reinforced silicon nitride ceramic matrix composites were pressureless sintered to high density by liquid phase sintering. Important processing parameters included: whisker dispersion by ultrasonic shear homogenization, particle refinement by attrition milling, pressure slip casting to obtain high greed densities, and sintering in a protective powder bed to limit decomposition. Composites with a {beta}20-Si{sub 3}N{sub 4} solid solution matrix containing 20 vol.% SiC whiskers were sintered to 98-100% theoretical density; composites having a Si{sub 3}N{sub 4} matrix containing YAG sintering aid were sintered to 98% of the theoretical density with 20 vol.% SiC whiskers, and 94% density withmore » 30 vol.% SiC whiskers. Analysis of the pressureless sintered composites revealed orientation of the SiC whiskers and the Si{sub 3}N{sub 4} matrix grains. The mechanical properties of hot pressed Si{sub 3}N{sub 4} composites reinforced with 20 vol.% SiC whiskers were shown to depend on the characteristics of the intergranular phase. Variations in the properties of the composites were analyzed in terms of the amount and morphology of the secondary phase, and the development of internal residual stresses due to the thermal expansion mismatch between the sintering aid phase at the grain boundaries.« less

The development of hydrogen sensor technology at NASA Lewis Research Center

NASA Technical Reports Server (NTRS)

Hunter, Gary W.; Neudeck, Philip G.; Jefferson, G. D.; Madzsar, G. C.; Liu, C. C.; Wu, Q. H.

1993-01-01

The detection of hydrogen leaks in aerospace applications, especially those involving hydrogen fuel propulsion systems, is of extreme importance for reasons of reliability, safety, and economy. Motivated by leaks occurring in liquid hydrogen lines supplying the main engine of the Space Shuttle, NASA Lewis has initiated a program to develop point-contact hydrogen sensors which address the needs of aerospace applications. Several different approaches are being explored. They include the fabrication of PdAg Schottky diode structures, the characterization of PdCr as a hydrogen sensitive alloy, and the use of SiC as a semiconductor for hydrogen sensors. This paper discusses the motivation behind and present status of each of the major components of the NASA LeRC hydrogen sensor program.

Processes and applications of silicon carbide nanocomposite fibers

NASA Astrophysics Data System (ADS)

Shin, D. G.; Cho, K. Y.; Jin, E. J.; Riu, D. H.

2011-10-01

Various types of SiC such as nanowires, thin films, foam, and continuous fibers have been developed since the early 1980s, and their applications have been expanded into several new applications, such as for gas-fueled radiation heater, diesel particulate filter (DPF), ceramic fiber separators and catalyst/catalyst supports include for the military, aerospace, automobile and electronics industries. For these new applications, high specific surface area is demanded and it has been tried by reducing the diameter of SiC fiber. Furthermore, functional nanocomposites show potentials in various harsh environmental applications. In this study, silicon carbide fiber was prepared through electrospinning of the polycarbosilane (PCS) with optimum molecular weight distribution which was synthesized by new method adopting solid acid catalyst such as ZSM-5 and γ-Al2O3. Functional elements such as aluminum, titanium, tungsten and palladium easily doped in the precursor fiber and remained in the SiC fiber after pyrolysis. The uniform SiC fibers were produced at the condition of spinning voltage over 20 kV from the PCS solution as the concentration of 1.3 g/ml in DMF/Toluene (3:7) and pyrolysis at 1200°C. Pyrolyzed products were processed into several interesting applications such as thermal batteries, hydrogen sensors and gas filters.

Synthesis of Ti3AuC2, Ti3Au2C2 and Ti3IrC2 by noble metal substitution reaction in Ti3SiC2 for high-temperature-stable Ohmic contacts to SiC

NASA Astrophysics Data System (ADS)

Fashandi, Hossein; Dahlqvist, Martin; Lu, Jun; Palisaitis, Justinas; Simak, Sergei I.; Abrikosov, Igor A.; Rosen, Johanna; Hultman, Lars; Andersson, Mike; Lloyd Spetz, Anita; Eklund, Per

2017-08-01

The large class of layered ceramics encompasses both van der Waals (vdW) and non-vdW solids. While intercalation of noble metals in vdW solids is known, formation of compounds by incorporation of noble-metal layers in non-vdW layered solids is largely unexplored. Here, we show formation of Ti3AuC2 and Ti3Au2C2 phases with up to 31% lattice swelling by a substitutional solid-state reaction of Au into Ti3SiC2 single-crystal thin films with simultaneous out-diffusion of Si. Ti3IrC2 is subsequently produced by a substitution reaction of Ir for Au in Ti3Au2C2. These phases form Ohmic electrical contacts to SiC and remain stable after 1,000 h of ageing at 600 °C in air. The present results, by combined analytical electron microscopy and ab initio calculations, open avenues for processing of noble-metal-containing layered ceramics that have not been synthesized from elemental sources, along with tunable properties such as stable electrical contacts for high-temperature power electronics or gas sensors.

Controllable growth of vertically aligned graphene on C-face SiC

DOE PAGES

Liu, Yu; Chen, Lianlian; Hilliard, Donovan; ...

2016-10-06

We investigated how to control the growth of vertically aligned graphene on C-face SiC by varying the processing conditions. It is found that, the growth rate scales with the annealing temperature and the graphene height is proportional to the annealing time. Temperature gradient and crystalline quality of the SiC substrates influence their vaporization. The partial vapor pressure is crucial as it can interfere with further vaporization. A growth mechanism is proposed in terms of physical vapor transport. The monolayer character of vertically aligned graphene is verified by Raman and X-ray absorption spectroscopy. With the processed samples, d 0 magnetism ismore » realized and negative magnetoresistance is observed after Cu implantation. We also prove that multiple carriers exist in vertically aligned graphene.« less

STM/STS study of ridges on epitaxial graphene/SiC

NASA Astrophysics Data System (ADS)

Li, Y. Y.; Liu, Y.; Weinert, M.; Li, L.

2012-02-01

The graphitization of hexagonal SiC surfaces provides a viable alternative for the synthesis of wafer-sized graphene for mass device production. During later stages of growth, ridges are often observed on the graphene layers as a result of bending and buckling to relieve the strain between the graphene and SiC substrate. In this work, we show, by atomic resolution STM/STS, that these ridges are in fact bulged regions of the graphene layer, forming one-dimentional (nanowire) and zero-dimentional (quantum dot) nanostructures. We further show that their structures can be manipulated by the pressure exerted by the STM tip during imaging. These results and their impact on the electronic properties of epitaxial graphene on SiC(0001) will be presented at the meeting.

Oxidation of ZrB2-SiC

NASA Technical Reports Server (NTRS)

Opila, Elizabeth J.; Halbig, Michael C.

2001-01-01

In this paper the oxidation behavior of ZrB2-20 vol% SiC is examined. Samples were exposed in stagnant air in a zirconia furnace (Deltech, Inc.) at temperatures of 1327, 1627, and 1927 C for ten ten-minute cycles. Samples were removed from the furnace after one, five, and ten cycles. Oxidized material was characterized by mass change when possible, x-ray diffraction (XRD), scanning electron microscopy (SEM), and energy dispersive spectroscopy (EDS). Oxidation kinetics, oxide scale development, and matrix recession were monitored as a function of time and temperature. Oxidation and recession rates of ZrB2 - 20 vol% SiC were adequately modeled by parabolic kinetics. Oxidation rates of this material are rapid, allowing only very short-term application in air or other high oxygen partial pressure environments.

Controllable growth of vertically aligned graphene on C-face SiC

DOE Office of Scientific and Technical Information (OSTI.GOV)

Liu, Yu; Chen, Lianlian; Hilliard, Donovan

We investigated how to control the growth of vertically aligned graphene on C-face SiC by varying the processing conditions. It is found that, the growth rate scales with the annealing temperature and the graphene height is proportional to the annealing time. Temperature gradient and crystalline quality of the SiC substrates influence their vaporization. The partial vapor pressure is crucial as it can interfere with further vaporization. A growth mechanism is proposed in terms of physical vapor transport. The monolayer character of vertically aligned graphene is verified by Raman and X-ray absorption spectroscopy. With the processed samples, d 0 magnetism ismore » realized and negative magnetoresistance is observed after Cu implantation. We also prove that multiple carriers exist in vertically aligned graphene.« less

Laser ultrasonic characterization of membranes for use as micro-electronic mechanical systems (MEMS)

NASA Astrophysics Data System (ADS)

Edwards, R. S.; Zhou, L. Q.; Pearce, M. J.; Prince, R. G.; Colston, G.; Myronov, M.; Leadley, D. R.; Trushkevych, O.

2017-02-01

Germanium (Ge) on Silicon (Si) has the potential to produce a wide variety of devices, including sensors, solar cells and transistors. Modification of these materials so that a suspended membrane layer is formed, through removing regions of the Si substrate, offers the potential for sensors with a more rapid response and higher sensitivity. Such membranes are a very simple micro-electronic mechanical system (MEMS). It is essential to ensure that the membranes are robust against shock and vibration, with well-characterised resonant frequencies, prior to any practical application. We present work using laser interferometry to characterise the resonant modes of membranes produced from Ge or silicon carbide (SiC) on a Si substrate, with the membranes typically having around 1 mm lateral dimensions. Two dimensional scanning of the sample enables visualisation of each mode. The stress measured from the resonant frequencies agrees well with that calculated from the growth conditions. SiC provides a more robust platform for electronics, while Ge offers better resonant properties. This offers a potential technique for characterising production quality or lifetime testing for the MEMS produced.

Soil Inorganic Carbon Formation: Can Parent Material Overcome Climate?

NASA Astrophysics Data System (ADS)

Stanbery, C.; Will, R. M.; Seyfried, M. S.; Benner, S. G.; Flores, A. N.; Guilinger, J.; Lohse, K. A.; Good, A.; Black, C.; Pierce, J. L.

2014-12-01

Soil carbon is the third largest carbon reservoir and is composed of both organic and inorganic constituents. However, the storage and flux of soil carbon within the global carbon cycle are not fully understood. While organic carbon is often the focus of research, the factors controlling the formation and dissolution of soil inorganic carbon (SIC) are complex. Climate is largely accepted as the primary control on SIC, but the effects of soil parent material are less clear. We hypothesize that effects of parent material are significant and that SIC accumulation will be greater in soils formed from basalts than granites due to the finer textured soils and more abundant calcium and magnesium cations. This research is being conducted in the Reynolds Creek Experimental Watershed (RCEW) in southwestern Idaho. The watershed is an ideal location because it has a range of gradients in precipitation (250 mm to 1200 mm), ecology (sagebrush steppe to juniper), and parent materials (a wide array of igneous and sedimentary rock types) over a relatively small area. Approximately 20 soil profiles will be excavated throughout the watershed and will capture the effects of differing precipitation amounts and parent material on soil characteristics. Several samples at each site will be collected for analysis of SIC content and grain size distribution using a pressure calcimeter and hydrometers, respectively. Initial field data suggests that soils formed over basalts have a higher concentration of SIC than those on granitic material. If precipitation is the only control on SIC, we would expect to see comparable amounts in soils formed on both rock types within the same precipitation zone. However, field observations suggest that for all but the driest sites, soils formed over granite had no SIC detected while basalt soils with comparable precipitation had measurable amounts of SIC. Grain size distribution appears to be a large control on SIC as the sandier, granitic soils promote deeper percolation. This ongoing research will clarify the processes involved in SIC formation and identify the situations where it is an atmospheric source or sink.

Measurement of Young's modulus and residual stress of thin SiC layers for MEMS high temperature applications

NASA Astrophysics Data System (ADS)

Pabst, Oliver; Schiffer, Michael; Obermeier, Ernst; Tekin, Tolga; Lang, Klaus Dieter; Ngo, Ha-Duong

2011-06-01

Silicon carbide (SiC) is a promising material for applications in harsh environments. Standard silicon (Si) microelectromechanical systems (MEMS) are limited in operating temperature to temperatures below 130 °C for electronic devices and below 600 °C for mechanical devices. Due to its large bandgap SiC enables MEMS with significantly higher operating temperatures. Furthermore, SiC exhibits high chemical stability and thermal conductivity. Young's modulus and residual stress are important mechanical properties for the design of sophisticated SiC-based MEMS devices. In particular, residual stresses are strongly dependent on the deposition conditions. Literature values for Young's modulus range from 100 to 400 GPa, and residual stresses range from 98 to 486 MPa. In this paper we present our work on investigating Young's modulus and residual stress of SiC films deposited on single crystal bulk silicon using bulge testing. This method is based on measurement of pressure-dependent membrane deflection. Polycrystalline as well as single crystal cubic silicon carbide samples are studied. For the samples tested, average Young's modulus and residual stress measured are 417 GPa and 89 MPa for polycrystalline samples. For single crystal samples, the according values are 388 GPa and 217 MPa. These results compare well with literature values.

Interaction mechanisms between ceramic particles and atomized metallic droplets

NASA Astrophysics Data System (ADS)

Wu, Yue; Lavernia, Enrique J.

1992-10-01

The present study was undertaken to provide insight into the dynamic interactions that occur when ceramic particles are placed in intimate contact with a metallic matrix undergoing a phase change. To that effect, Al-4 wt pct Si/SiCp composite droplets were synthesized using a spray atomization and coinjection approach, and their solidification microstructures were studied both qualitatively and quantitatively. The present results show that SiC particles (SiCp) were incor- porated into the matrix and that the extent of incorporation depends on the solidification con- dition of the droplets at the moment of SiC particle injection. Two factors were found to affect the distribution and volume fraction of SiC particles in droplets: the penetration of particles into droplets and the entrapment and/or rejection of particles by the solidification front. First, during coinjection, particles collide with the atomized droplets with three possible results: they may penetrate the droplets, adhere to the droplet surface, or bounce back after impact. The extent of penetration of SiC particles into droplets was noted to depend on the kinetic energy of the particles and the magnitude of the surface energy change in the droplets that occurs upon impact. In liquid droplets, the extent of penetration of SiC particles was shown to depend on the changes in surface energy, ΔEs, experienced by the droplets. Accordingly, large SiC particles encoun- tered more resistance to penetration relative to small ones. In solid droplets, the penetration of SiC particles was correlated with the dynamic pressure exerted by the SiC particles on the droplets during impact and the depth of the ensuing crater. The results showed that no pene- tration was possible in such droplets. Second, once SiC particles have penetrated droplets, their final location in the microstructure is governed by their interactions with the solidification front. As a result of these interactions, both entrapment and rejection of SiC particles occurred during droplet solidification. A comparison of the present results to those anticipated from well-established kinetic and thermodynamic models led to some interesting findings. First, the models proposed by Boiling and Cisse[24] and Chernov et al.[58] predict relative low critical interface velocities necessary for entrapment, inconsistent with the present experimental findings. Second, although the observed correlation between the critical front velocity and droplet diameter was generally consistent with that predicted by Stefanescu et a/.’s model,[27] the dependence on the size of SiC particles was not. In view of this discrepancy, three possible mechanisms were proposed to account for the experimental findings: nucleation of α-Al on SiC particles, entrapment of SiC particles between primary dendrite arms, and entrapment of SiC particles between secondary dendrite arms.

ProTEK PSB as Biotechnology Photosensitive Protection Mask on 3C-SiC-on-Si in MEMS Sensor

NASA Astrophysics Data System (ADS)

Marsi, N.; Majlis, B. Y.; Mohd-Yasin, F.; Hamzah, A. A.; Mohd Rus, A. Z.

2016-11-01

This project presents the fabrication of MEMS employing a cubic silicon carbide (3C- SiC) on silicon wafer using newly developed ProTEK PSB as biotechnology photosensitive protection mask. This new biotechnology can reduce the number of processes and simplify the process flow with minimal impact on overall undercut performance. The 680 pm thick wafer is back-etched, leaving the 3C-SiC thin film with a thickness of 1.0 μm as the flexible diaphragm to detect pressure. The effect of the new coating of ProTEK PSB on different KOH solvents were investigated depending on various factors such as development time, final cure temperature and the thickness of the ProTEK PSB deposited layer. It is found that 6.174 μm thickness of ProTEK PSB offers some possibility of reducing the processing time compared to silicon nitride etch masks in KOH (55%wt, 80°C). The new ProTEK PSB biotechnology photosensitive protection mask indicates good stability and sustains its performance in different treatments under KOH and IPA for 8 hours. This work also revealed that the fabrication of MEMS sensors using the new biotechnology photosensitive protection mask provides a simple assembly approach and reduces manufacturing costs. The MEMS sensor can operate up to 500 °C as indicated under the sensitivity of 0.826 pF/MPa with nonlinearity and hysteresis of 0.61% and 3.13%, respectively.

Effects of high pressure nitrogen on the thermal stability of SiC fibers

NASA Technical Reports Server (NTRS)

Jaskowiak, Martha H.

1991-01-01

Polymer-derived SiC fibers were exposed to nitrogen gas pressures of 7 and 50 atm at temperatures up to 1800 C. The fiber weight loss, chemical composition, and tensile strength were then measured at room temperature in order to understand the effects of nitrogen exposure on fiber stability. High pressure nitrogen treatments limited weight loss to 3 percent or less for temperatures up to 1800 C. The bulk Si-C-O chemical composition of the fiber remained relatively constant up to 1800 C with only a slight increase in nitrogen content after treatment at 50 atm; however, fiber strength retention was significantly improved. To further understand the effects of the nitrogen atmosphere on the fiber stability, the results of previous high pressure argon treatments were compared to those of the high pressure nitrogen treatments. High pressure inert gas can temporarily maintain fiber strength by physically inhibiting the evolution of gaseous species which result from internal reactions. In addition to this physical effect, it would appear that high pressure nitrogen further improved fiber temperature capability by chemically reacting with the fiber surface, thereby reducing the rate of gas evolution. Subsequent low pressure argon treatments following the initial nitrogen treatments resulted in stronger fibers than after argon treatment alone, further supporting the chemical reaction mechanism and its beneficial effects on fiber strength.

PVD Silicon Carbide as a Thin Film Packaging Technology for Antennas on LCP Substrates for Harsh Environments

NASA Technical Reports Server (NTRS)

Scardelletti, Maximilian C.; Stanton, John W.; Ponchak, George E.; Jordan, Jennifer L.; Zorman, Christian A.

2010-01-01

This paper describes an effort to develop a thin film packaging technology for microfabricated planar antennas on polymeric substrates based on silicon carbide (SiC) films deposited by physical vapor deposition (PVD). The antennas are coplanar waveguide fed dual frequency folded slot antennas fabricated on liquid crystal polymer (LCP) substrates. The PVD SiC thin films were deposited directly onto the antennas by RF sputtering at room temperature at a chamber pressure of 30 mTorr and a power level of 300 W. The SiC film thickness is 450 nm. The return loss and radiation patterns were measured before and after the SiC-coated antennas were submerged into perchloric acid for 1 hour. No degradation in RF performance or physical integrity of the antenna was observed.

Application of X-ray micro-CT for micro-structural characterization of APCVD deposited SiC coatings on graphite conduit.

PubMed

Agrawal, A K; Sarkar, P S; Singh, B; Kashyap, Y S; Rao, P T; Sinha, A

2016-02-01

SiC coatings are commonly used as oxidation protective materials in high-temperature applications. The operational performance of the coating depends on its microstructure and uniformity. This study explores the feasibility of applying tabletop X-ray micro-CT for the micro-structural characterization of SiC coating. The coating is deposited over the internal surface of pipe structured graphite fuel tube, which is a prototype of potential components of compact high-temperature reactor (CHTR). The coating is deposited using atmospheric pressure chemical vapor deposition (APCVD) and properties such as morphology, porosity, thickness variation are evaluated. Micro-structural differences in the coating caused by substrate distance from precursor inlet in a CVD reactor are also studied. The study finds micro-CT a potential tool for characterization of SiC coating during its future course of engineering. We show that depletion of reactants at larger distances causes development of larger pores in the coating, which affects its morphology, density and thickness. Copyright © 2015 Elsevier Ltd. All rights reserved.

SiC Recession Due to SiO2 Scale Volatility Under Combustor Conditions

NASA Technical Reports Server (NTRS)

Robinson, Raymond Craig

1997-01-01

One of today's most important and challenging technological problems is the development of advanced materials and processes required to design and build a fleet of supersonic High Speed Civil Transport (HSCT) airliners, a follow-up to the Concorde SST. The innovative combustor designs required for HSCT engines will need high-temperature materials with long-term environmental stability. Higher combustor liner temperatures than today's engines and the need for lightweight materials will require the use of advanced ceramic-matrix composites (CMC's) in hot-section components. The HSCT is just one example being used to demonstrate the need for such materials. This thesis evaluates silicon carbide (SiC) as a potential base material for HSCT and other similar applications. Key issues are the environmental durability for the materials of interest. One of the leading combustor design schemes leads to an environment which will contain both oxidizing and reducing gas mixtures. The concern is that these environments may affect the stability of the silica (SiO2) scale on which SiC depends for environmental protection. A unique High Pressure Burner Rig (HPBR) was developed to simulate the combustor conditions of future gas turbine engines, and a series of tests were conducted on commercially available SiC material. These tests are intended as a feasibility study for the use of these materials in applications such as the HSCT. Linear weight loss and surface recession of the SiC is observed as a result of SiO2 volatility for both fuel-lean and fuel-rich gas mixtures. These observations are compared and agree well with thermogravimetric analysis (TGA) experiments. A strong Arrhenius-type temperature dependence exists. In addition, the secondary dependencies of pressure and gas velocity are defined. As a result, a model is developed to enable extrapolation to points outside the experimental space of the burner rig, and in particular, to potential gas turbine engine conditions.

Alumina Based 500 C Electronic Packaging Systems and Future Development

NASA Technical Reports Server (NTRS)

Chen, Liang-Yu

2012-01-01

NASA space and aeronautical missions for probing the inner solar planets as well as for in situ monitoring and control of next-generation aeronautical engines require high-temperature environment operable sensors and electronics. A 96% aluminum oxide and Au thick-film metallization based packaging system including chip-level packages, printed circuit board, and edge-connector is in development for high temperature SiC electronics. An electronic packaging system based on this material system was successfully tested and demonstrated with SiC electronics at 500 C for over 10,000 hours in laboratory conditions previously. In addition to the tests in laboratory environments, this packaging system has more recently been tested with a SiC junction field effect transistor (JFET) on low earth orbit through the NASA Materials on the International Space Station Experiment 7 (MISSE7). A SiC JFET with a packaging system composed of a 96% alumina chip-level package and an alumina printed circuit board mounted on a data acquisition circuit board was launched as a part of the MISSE7 suite to International Space Station via a Shuttle mission and tested on the orbit for eighteen months. A summary of results of tests in both laboratory and space environments will be presented. The future development of alumina based high temperature packaging using co-fired material systems for improved performance at high temperature and more feasible mass production will also be discussed.

Aerospace Sensor Systems: From Sensor Development To Vehicle Application

NASA Technical Reports Server (NTRS)

Hunter, Gary W.

2008-01-01

This paper presents an overview of years of sensor system development and application for aerospace systems. The emphasis of this work is on developing advanced capabilities for measurement and control of aeropropulsion and crew vehicle systems as well as monitoring the safety of those systems. Specific areas of work include chemical species sensors, thin film thermocouples and strain gages, heat flux gages, fuel gages, SiC based electronic devices and sensors, space qualified electronics, and MicroElectroMechanical Systems (MEMS) as well as integrated and multifunctional sensor systems. Each sensor type has its own technical challenges related to integration and reliability in a given application. The general approach has been to develop base sensor technology using microfabrication techniques, integrate sensors with "smart" hardware and software, and demonstrate those systems in a range of aerospace applications. Descriptions of the sensor elements, their integration into sensors systems, and examples of sensor system applications will be discussed. Finally, suggestions related to the future of sensor technology will be given. It is concluded that smart micro/nano sensor technology can revolutionize aerospace applications, but significant challenges exist in maturing the technology and demonstrating its value in real-life applications.

Oxidation of Ultra-High Temperature Ceramics in Water Vapor

NASA Technical Reports Server (NTRS)

Nguyen, QuynhGiao N.; Opila, Elizabeth J.; Robinson, Raymond C.

2003-01-01

Ultra high temperature ceramics (UHTCs) including HfB2 + SiC (20% by volume), ZrB2 + SiC (20% by volume) and ZrB2 + SiC (14% by volume) + C (30% by volume) have historically been evaluated as reusable thermal protection systems for hypersonic vehicles. This study investigates UHTCs for use as potential combustion and aeropropulsion engine materials. These materials were oxidized in water vapor (90%) using a cyclic vertical furnace at 1 atm. The total exposure time was 10 hours at temperatures of 1200, 1300, and 1400 C. CVD SiC was also evaluated as a baseline comparison. Weight change measurements, X-ray diffraction analyses, surface and cross-sectional SEM and EDS were performed. These results will be compared with tests ran in static air at temperatures of 1327, 1627, and 1927 C. Oxidation comparisons will also be made to the study by Tripp. A small number of high pressure burner rig (HPBR) results at 1100 and 1300 C will also be discussed. Specific weight changes at all three temperatures along with the SIC results are shown. SiC weight change is negligible at such short duration times. HB2 + SiC (HS) performed the best out of all the tested UHTCS for all exposure temperatures. ZrB2 + Sic (ZS) results indicate a slightly lower oxidation rate than that of ZrBl + SiC + C (ZCS) at 1200 and 1400 C, but a clear distinction can not be made based on the limited number of tested samples. Scanning electron micrographs of the cross-sections of all the UHTCs were evaluated. A representative area for HS is presented at 1400 C for 26 hours which was the composition with the least amount of oxidation. A continuous SiO2 scale is present in the outer most edge of the surface. An image of ZCS is presented at 1400 C for 10 hours, which shows the most degradation of all the compositions studied. Here, the oxide surface is a mixture of ZrSiO4, ZrO2 and SO2.

Nanoporous Silicon Carbide for Nanoelectromechanical Systems Applications

NASA Technical Reports Server (NTRS)

Hossain, T.; Khan, F.; Adesida, I.; Bohn, P.; Rittenhouse, T.; Lienhard, Michael (Technical Monitor)

2003-01-01

A major goal of this project is to produce porous silicon carbide (PSiC) via an electroless process for eventual utilization in nanoscale sensing platforms. Results in the literature have shown a variety of porous morphologies in SiC produced in anodic cells. Therefore, predictability and reproducibility of porous structures are initial concerns. This work has concentrated on producing morphologies of known porosity, with particular attention paid toward producing the extremely high surface areas required for a porous flow sensor. We have conducted a parametric study of electroless etching conditions and characteristics of the resulting physical nanostructure and also investigated the relationship between morphology and materials properties. Further, we have investigated bulk etching of SiC using both photo-electrochemical etching and inductively-coupled-plasma reactive ion etching techniques.

Multilayered BN Coatings Processed by a Continuous LPCVD Treatment onto Hi-Nicalon Fibers

NASA Astrophysics Data System (ADS)

Jacques, S.; Vincent, H.; Vincent, C.; Lopez-Marure, A.; Bouix, J.

2001-12-01

Boron nitride coatings were deposited onto SiC fibers by means of continuous low-pressure chemical vapor deposition (LPCVD) treatment from BF3/NH3 mixtures. This process lies in unrolling the fiber in the reactor axis. The relationships between the processing parameters and the structure of the BN deposits are presented. Thanks to a temperature gradient present in the reactor, multilayered BN films can be performed by stacking successive isotropic and anisotropic sublayers. Tensile tests show that when the temperature profile is well adapted, the SiC fibers are not damaged by the LPCVD treatment.

A kinetic and equilibrium analysis of silicon carbide chemical vapor deposition on monofilaments

NASA Technical Reports Server (NTRS)

Gokoglu, S. A.; Kuczmarski, M. A.

1993-01-01

Chemical kinetics of atmospheric pressure silicon carbide (SiC) chemical vapor deposition (CVD) from dilute silane and propane source gases in hydrogen is numerically analyzed in a cylindrical upflow reactor designed for CVD on monofilaments. The chemical composition of the SiC deposit is assessed both from the calculated total fluxes of carbon and silicon and from chemical equilibrium considerations for the prevailing temperatures and species concentrations at and along the filament surface. The effects of gas and surface chemistry on the evolution of major gas phase species are considered in the analysis.

In situ observation of high-pressure phase transition in silicon carbide under shock loading using ultrafast x-ray diffraction

NASA Astrophysics Data System (ADS)

Tracy, Sally June

2017-06-01

SiC is an important high-strength ceramic material used for a range of technological applications, including lightweight impact shielding and abrasives. SiC is also relevant to geology and planetary science. It may be a host of reduced carbon in the Earth's interior and also occurs in meteorites and impact sites. SiC has also been put forward as a possible major constituent in the proposed class of extra-solar planets known as carbon planets. Previous studies have used wave profile measurements to identify a phase transition under shock loading near 1 Mbar, but lattice-level structural information was not obtained. Here we present the behavior of silicon carbide under shock loading as investigated through a series of time-resolved pump-probe x-ray diffraction measurements up to 200 GPa. Our experiments were conducted at the Materials in Extreme Conditions beamline of the Linac Coherent Light Source. In situ x-ray diffraction data on shock-compressed SiC was collected using a free electron laser source combined with a pulsed high-energy laser. These measurements allow for the determination of time-dependent atomic arrangements, demonstrating that the wurtzite phase of SiC transforms directly to the B1 structure. Our measurements also reveal details of the material texture evolution under shock loading and release.

Unraveling Crystalline Structure of High-Pressure Phase of Silicon Carbonate

NASA Astrophysics Data System (ADS)

Zhou, Rulong; Qu, Bingyan; Dai, Jun; Zeng, Xiao Cheng

2014-03-01

Although CO2 and SiO2 both belong to group-IV oxides, they exhibit remarkably different bonding characteristics and phase behavior at ambient conditions. At room temperature, CO2 is a gas, whereas SiO2 is a covalent solid with rich polymorphs. A recent successful synthesis of the silicon-carbonate solid from the reaction between CO2 and SiO2 under high pressure [M. Santoro et al., Proc. Natl. Acad. Sci. U.S.A. 108, 7689 (2011)] has resolved a long-standing puzzle regarding whether a SixC1-xO2 compound between CO2 and SiO2 exists in nature. Nevertheless, the detailed atomic structure of the SixC1-xO2 crystal is still unknown. Here, we report an extensive search for the high-pressure crystalline structures of the SixC1-xO2 compound with various stoichiometric ratios (SiO2:CO2) using an evolutionary algorithm. Based on the low-enthalpy structures obtained for each given stoichiometric ratio, several generic structural features and bonding characteristics of Si and C in the high-pressure phases are identified. The computed formation enthalpies show that the SiC2O6 compound with a multislab three-dimensional (3D) structure is energetically the most favorable at 20 GPa. Hence, a stable crystalline structure of the elusive SixC1-xO2 compound under high pressure is predicted and awaiting future experimental confirmation. The SiC2O6 crystal is an insulator with elastic constants comparable to typical hard solids, and it possesses nearly isotropic tensile strength as well as extremely low shear strength in the 2D plane, suggesting that the multislab 3D crystal is a promising solid lubricant. These valuable mechanical and electronic properties endow the SiC2O6 crystal for potential applications in tribology and nanoelectronic devices, or as a stable solid-state form for CO2 sequestration.

Silicon Carbide-Based Hydrogen Gas Sensors for High-Temperature Applications

PubMed Central

Kim, Seongjeen; Choi, Jehoon; Jung, Minsoo; Joo, Sungjae; Kim, Sangchoel

2013-01-01

We investigated SiC-based hydrogen gas sensors with metal-insulator-semiconductor (MIS) structure for high temperature process monitoring and leak detection applications in fields such as the automotive, chemical and petroleum industries. In this work, a thin tantalum oxide (Ta2O5) layer was exploited with the purpose of sensitivity improvement, because tantalum oxide has good stability at high temperature with high permeability for hydrogen gas. Silicon carbide (SiC) was used as a substrate for high-temperature applications. We fabricated Pd/Ta2O5/SiC-based hydrogen gas sensors, and the dependence of their I-V characteristics and capacitance response properties on hydrogen concentrations were analyzed in the temperature range from room temperature to 500 °C. According to the results, our sensor shows promising performance for hydrogen gas detection at high temperatures. PMID:24113685

Silicon carbide-based hydrogen gas sensors for high-temperature applications.

PubMed

Kim, Seongjeen; Choi, Jehoon; Jung, Minsoo; Joo, Sungjae; Kim, Sangchoel

2013-10-09

We investigated SiC-based hydrogen gas sensors with metal-insulator-semiconductor (MIS) structure for high temperature process monitoring and leak detection applications in fields such as the automotive, chemical and petroleum industries. In this work, a thin tantalum oxide (Ta2O5) layer was exploited with the purpose of sensitivity improvement, because tantalum oxide has good stability at high temperature with high permeability for hydrogen gas. Silicon carbide (SiC) was used as a substrate for high-temperature applications. We fabricated Pd/Ta2O5/SiC-based hydrogen gas sensors, and the dependence of their I-V characteristics and capacitance response properties on hydrogen concentrations were analyzed in the temperature range from room temperature to 500 °C. According to the results, our sensor shows promising performance for hydrogen gas detection at high temperatures.

Interior phase transformations and mass-radius relationships of silicon-carbon planets

DOE Office of Scientific and Technical Information (OSTI.GOV)

Wilson, Hugh F.; Militzer, Burkhard, E-mail: hughfw@gmail.com

2014-09-20

Planets such as 55 Cancri e orbiting stars with a high carbon-to-oxygen ratio may consist primarily of silicon and carbon, with successive layers of carbon, silicon carbide, and iron. The behavior of silicon-carbon materials at the extreme pressures prevalent in planetary interiors, however, has not yet been sufficiently understood. In this work, we use simulations based on density functional theory to determine high-pressure phase transitions in the silicon-carbon system, including the prediction of new stable compounds with Si{sub 2}C and SiC{sub 2} stoichiometry at high pressures. We compute equations of state for these silicon-carbon compounds as a function of pressure,more » and hence derive interior structural models and mass-radius relationships for planets composed of silicon and carbon. Notably, we predict a substantially smaller radius for SiC planets than in previous models, and find that mass radius relationships for SiC planets are indistinguishable from those of silicate planets. We also compute a new equation of state for iron. We rederive interior models for 55 Cancri e and are able to place more stringent restrictions on its composition.« less

Thermal equation of state of silicon carbide

NASA Astrophysics Data System (ADS)

Wang, Yuejian; Liu, Zhi T. Y.; Khare, Sanjay V.; Collins, Sean Andrew; Zhang, Jianzhong; Wang, Liping; Zhao, Yusheng

2016-02-01

A large volume press coupled with in-situ energy-dispersive synchrotron X-ray was used to probe the change of silicon carbide (SiC) under high pressure and temperature (P-T) up to 8.1 GPa and 1100 K. The obtained pressure-volume-temperature data were fitted to a modified high-T Birch-Murnaghan equation of state, yielding values of a series of thermo-elastic parameters, such as the ambient bulk modulus KTo = 237(2) GPa, temperature derivative of the bulk modulus at a constant pressure (∂K/∂T)P = -0.037(4) GPa K-1, volumetric thermal expansivity α(0, T) = a + bT with a = 5.77(1) × 10-6 K-1 and b = 1.36(2) × 10-8 K-2, and pressure derivative of the thermal expansion at a constant temperature (∂α/∂P)T = 6.53 ± 0.64 × 10-7 K-1 GPa-1. Furthermore, we found the temperature derivative of the bulk modulus at a constant volume, (∂KT/∂T)V, equal to -0.028(4) GPa K-1 by using a thermal pressure approach. In addition, the elastic properties of SiC were determined by density functional theory through the calculation of Helmholtz free energy. The computed results generally agree well with the experimentally determined values.

Reduction of structural defects in thick 4H-SiC epitaxial layers grown on 4° off-axis substrates

NASA Astrophysics Data System (ADS)

Yazdanfar, M.; Ivanov, I. G.; Pedersen, H.; Kordina, O.; Janzén, E.

2013-06-01

By carefully controlling the surface chemistry of the chemical vapor deposition process for silicon carbide (SiC), 100 μm thick epitaxial layers with excellent morphology were grown on 4° off-axis SiC substrates at growth rates exceeding 100 μm/h. In order to reduce the formation of step bunching and structural defects, mainly triangular defects, the effect of varying parameters such as growth temperature, C/Si ratio, Cl/Si ratio, Si/H2 ratio, and in situ pre-growth surface etching time are studied. It was found that an in-situ pre growth etch at growth temperature and pressure using 0.6% HCl in hydrogen for 12 min reduced the structural defects by etching preferentially on surface damages of the substrate surface. By then applying a slightly lower growth temperature of 1575 °C, a C/Si ratio of 0.8, and a Cl/Si ratio of 5, 100 μm thick, step-bunch free epitaxial layer with a minimum triangular defect density and excellent morphology could be grown, thus enabling SiC power device structures to be grown on 4° off axis SiC substrates.

A comparative study of the constitutive models for silicon carbide

NASA Astrophysics Data System (ADS)

Ding, Jow-Lian; Dwivedi, Sunil; Gupta, Yogendra

2001-06-01

Most of the constitutive models for polycrystalline silicon carbide were developed and evaluated using data from either normal plate impact or Hopkinson bar experiments. At ISP, extensive efforts have been made to gain detailed insight into the shocked state of the silicon carbide (SiC) using innovative experimental methods, viz., lateral stress measurements, in-material unloading measurements, and combined compression shear experiments. The data obtained from these experiments provide some unique information for both developing and evaluating material models. In this study, these data for SiC were first used to evaluate some of the existing models to identify their strength and possible deficiencies. Motivated by both the results of this comparative study and the experimental observations, an improved phenomenological model was developed. The model incorporates pressure dependence of strength, rate sensitivity, damage evolution under both tension and compression, pressure confinement effect on damage evolution, stiffness degradation due to damage, and pressure dependence of stiffness. The model developments are able to capture most of the material features observed experimentally, but more work is needed to better match the experimental data quantitatively.

Electrical Impact of SiC Structural Crystal Defects on High Electric Field Devices

NASA Technical Reports Server (NTRS)

Neudeck, Philip G.

1999-01-01

Commercial epilayers are known to contain a variety of crystallographic imperfections. including micropipes, closed core screw dislocations. low-angle boundaries, basal plane dislocations, heteropolytypic inclusions, and non-ideal surface features like step bunching and pits. This paper reviews the limited present understanding of the operational impact of various crystal defects on SiC electrical devices. Aside from micropipes and triangular inclusions whose densities have been shrinking towards manageably small values in recent years, many of these defects appear to have little adverse operational and/or yield impact on SiC-based sensors, high-frequency RF, and signal conditioning electronics. However high-power switching devices used in power management and distribution circuits have historically (in silicon experience) demanded the highest material quality for prolonged safe operation, and are thus more susceptible to operational reliability problems that arise from electrical property nonuniformities likely to occur at extended crystal defects. A particular emphasis is placed on the impact of closed-core screw dislocations on high-power switching devices, because these difficult to observe defects are present in densities of thousands per cm,in commercial SiC epilayers. and their reduction to acceptable levels seems the most problematic at the present time.

Seasonal Ice Zone Reconnaissance Surveys Coordination

DTIC Science & Technology

2014-09-30

profiler (AXCP) ocean velocity shear (Morison), UpTempO buoy measurements of sea surface temperature (SST), sea level atmospheric pressure ( SLP ), and...and prediction…. Steele UpTempO buoy drops for SLP , SST, SSS, & surface velocity Visible and Thermal Images of the SIZ from the Coast Guard...Expendable CTD, AXCP= Air Expendable Current Profiler, SLP = Sea Level atmospheric Pressure, SST= Seas Surface Temperature, A/C= aircraft, SIC=Sea Ice

Systems and methods for measuring component matching

NASA Technical Reports Server (NTRS)

Courter, Kelly J. (Inventor); Slenk, Joel E. (Inventor)

2006-01-01

Systems and methods for measuring a contour match between adjacent components are disclosed. In one embodiment, at least two pressure sensors are located between adjacent components. Each pressure sensor is adapted to obtain a pressure measurement at a location a predetermined distance away from the other pressure sensors, and to output a pressure measurement for each sensor location. An output device is adapted to receive the pressure measurements from at least two pressure sensors and display the pressure measurements. In one aspect, the pressure sensors include flexible thin film pressure sensors. In accordance with other aspects of the invention, a method is provided for measuring a contour match between two interfacing components including measuring at least one pressure applied to at least one sensor between the interfacing components.

Cryogenic High Pressure Sensor Module

NASA Technical Reports Server (NTRS)

Chapman, John J. (Inventor); Shams, Qamar A. (Inventor); Powers, William T. (Inventor)

1999-01-01

A pressure sensor is provided for cryogenic, high pressure applications. A highly doped silicon piezoresistive pressure sensor is bonded to a silicon substrate in an absolute pressure sensing configuration. The absolute pressure sensor is bonded to an aluminum nitride substrate. Aluminum nitride has appropriate coefficient of thermal expansion for use with highly doped silicon at cryogenic temperatures. A group of sensors, either two sensors on two substrates or four sensors on a single substrate are packaged in a pressure vessel.

Cryogenic, Absolute, High Pressure Sensor

NASA Technical Reports Server (NTRS)

Chapman, John J. (Inventor); Shams. Qamar A. (Inventor); Powers, William T. (Inventor)

2001-01-01

A pressure sensor is provided for cryogenic, high pressure applications. A highly doped silicon piezoresistive pressure sensor is bonded to a silicon substrate in an absolute pressure sensing configuration. The absolute pressure sensor is bonded to an aluminum nitride substrate. Aluminum nitride has appropriate coefficient of thermal expansion for use with highly doped silicon at cryogenic temperatures. A group of sensors, either two sensors on two substrates or four sensors on a single substrate are packaged in a pressure vessel.

Limited inflammatory response in rats after acute exposure to a silicon carbide nanoaerosol

NASA Astrophysics Data System (ADS)

Laloy, J.; Lozano, O.; Alpan, L.; Masereel, B.; Toussaint, O.; Dogné, J. M.; Lucas, S.

2015-08-01

Inhalation represents the major route of human exposure to manufactured nanomaterials (NMs). Assessments are needed about the potential risks of NMs from inhalation on different tissues and organs, especially the respiratory tract. The aim of this limited study is to determine the potential acute pulmonary toxicity in rats exposed to a dry nanoaerosol of silicon carbide (SiC) nanoparticles (NPs) in a whole-body exposure (WBE) model. The SiC nanoaerosol is composed of a bimodal size distribution of 92.8 and 480 nm. The exposure concentration was 4.91 mg/L, close to the highest recommended concentration of 5 mg/L by the Organisation for Economic Co-operation and Development. Rats were exposed for 6 h to a stable and reproducible SiC nanoaerosol under real-time measurement conditions. A control group was exposed to the filtered air used to create the nanoaerosol. Animals were sacrificed immediately, 24 or 72 h after exposure. The bronchoalveolar lavage fluid from rat lungs was recovered. Macrophages filled with SiC NPs were observed in the rat lungs. The greatest load of SiC and macrophages filled with SiC were observed on the rat lungs sacrificed 24 h after acute exposure. A limited acute inflammatory response was found up to 24 h after exposure characterized by a lactate dehydrogenase and total protein increase or presence of inflammatory cells in pulmonary lavage. For this study a WBE model has been developed, it allows the simultaneous exposure of six rats to a nanoaerosol and six rats to clean-filtered air. The nanoaerosol was generated using a rotating brush system (RBG-1000) and analyzed with an electrical low pressure impactor in real time.

Progress in Solving the Elusive Ag Transport Mechanism in TRISO Coated Particles: What is new?

DOE Office of Scientific and Technical Information (OSTI.GOV)

Isabella Van Rooyen

2014-10-01

The TRISO particle for HTRs has been developed to an advanced state where the coating withstands internal gas pressures and retains fission products during irradiation and under postulated accidents. However, one exception is Ag that has been found to be released from high quality TRISO coated particles when irradiated and can also during high temperature accident heating tests. Although out- of- pile laboratory tests have never hither to been able to demonstrate a diffusion process of Ag in SiC, effective diffusion coefficients have been derived to successfully reproduce measured Ag-110m releases from irradiated HTR fuel elements, compacts and TRISO particlesmore » It was found that silver transport through SiC does not proceed via bulk volume diffusion. Presently grain boundary diffusion that may be irradiation enhanced either by neutron bombardment or by the presence of fission products such as Pd, are being investigated. Recent studies of irradiated AGR-1 TRISO fuel using scanning transmission electron microscopy (STEM), transmission kukuchi diffraction (TKD) patterns and high resolution transmission electron microscopy (HRTEM) have been used to further the understanding of Ag transport through TRISO particles. No silver was observed in SiC grains, but Ag was identified at triple-points and grain boundaries of the SiC layer in the TRISO particle. Cadmium was also found in some of the very same triple junctions, but this could be related to silver behavior as Ag-110m decays to Cd-110. Palladium was identified as the main constituent of micron-sized precipitates present at the SiC grain boundaries and in most SiC grain boundaries and the potential role of Pd in the transport of Ag will be discussed.« less

Material removal characteristics of orthogonal velocity polishing tool for efficient fabrication of CVD SiC mirror surfaces

NASA Astrophysics Data System (ADS)

Seo, Hyunju; Han, Jeong-Yeol; Kim, Sug-Whan; Seong, Sehyun; Yoon, Siyoung; Lee, Kyungmook; Lee, Haengbok

2015-09-01

Today, CVD SiC mirrors are readily available in the market. However, it is well known to the community that the key surface fabrication processes and, in particular, the material removal characteristics of the CVD SiC mirror surface varies sensitively depending on the shop floor polishing and figuring variables. We investigated the material removal characteristics of CVD SiC mirror surfaces using a new and patented polishing tool called orthogonal velocity tool (OVT) that employs two orthogonal velocity fields generated simultaneously during polishing and figuring machine runs. We built an in-house OVT machine and its operating principle allows for generation of pseudo Gaussian shapes of material removal from the target surface. The shapes are very similar to the tool influence functions (TIFs) of other polishing machine such as IRP series polishing machines from Zeeko. Using two CVD SiC mirrors of 150 mm in diameter and flat surface, we ran trial material removal experiments over the machine run parameter ranges from 12.901 to 25.867 psi in pressure, 0.086 m/sec to 0.147 m/sec in tool linear velocity, and 5 to 15 sec in dwell time. An in-house developed data analysis program was used to obtain a number of Gaussian shaped TIFs and the resulting material removal coefficient varies from 3.35 to 9.46 um/psi hour m/sec with the mean value to 5.90 ± 1.26(standard deviation). We report the technical details of the new OVT machine, of the data analysis program, of the experiments and the results together with the implications to the future development of the OVT machine and process for large CVD SiC mirror surfaces.

Carbothermal transformation of a graphitic carbon nanofiber/silica aerogel composite to a SiC/silica nanocomposite.

PubMed

Lu, Weijie; Steigerwalt, Eve S; Moore, Joshua T; Sullivan, Lisa M; Collins, W Eugene; Lukehart, C M

2004-09-01

Carbon nanofiber/silica aerogel composites are prepared by sol-gel processing of surface-enhanced herringbone graphitic carbon nanofibers (GCNF) and Si(OMe)4, followed by supercritical CO2 drying. Heating the resulting GCNF/silica aerogel composites to 1650 degrees C under a partial pressure of Ar gas initiates carbothermal reaction between the silica aerogel matrix and the carbon nanofiber component to form SiC/silica nanocomposites. The SiC phase is present as nearly spherical nanoparticles, having an average diameter of ca. 8 nm. Formation of SiC is confirmed by powder XRD and by Raman spectroscopy.

Development of a metal-based composite actuator

NASA Astrophysics Data System (ADS)

Asanuma, Hiroshi; Haga, Osamu; Ishii, Toshio; Kurihara, Haruki; Ohira, Junichiro; Hakoda, Genji

2000-06-01

This paper describes a basic concept and elemental developments to realize a metal based composite actuator to be used for smart structures. In this study, CFRP prepreg was laminated on aluminum plate to develop an actuator and this laminate could perform unidirectional actuation. SiC continuous fiber/Al composite thin plate could also be used for form a modified type of actuator instead of using CFRP. As sensors to be embedded in this actuator, the following ones wee developed. (1) A pre-notched optical fiber filament could be embedded in aluminum matrix without fracture by the interphase forming/bonding method with copper insert and could be fractured in it at the notch, which enabled forming of an optical interference type strain sensor. (2) Nickel wire could be uniformly oxidized and embedded in aluminum matrix without fracture, which could successfully work as a temperature sensor and a strain sensor.

Study of silicon carbide formation by liquid silicon infiltration of porous carbon structures

NASA Astrophysics Data System (ADS)

Margiotta, Jesse C.

Silicon carbide (SiC) materials are prime candidates for high temperature heat exchangers for next generation nuclear reactors due to their refractory nature and high thermal conductivity at elevated temperatures. This research has focused on demonstrating the potential of liquid silicon infiltration (LSI) for making SiC to achieve this goal. The major advantage of this method over other ceramic processing techniques is the enhanced capability of making fully dense, high purity SiC materials in complex net shapes. For successful formation of net shape SiC using LSI techniques, the carbon preform reactivity and pore structure must be controlled to allow the complete infiltration of the porous carbon structure followed by conversion of this carbon to SiC. We have established a procedure for achieving desirable carbon properties by using carbon precursors consisting of two readily available high purity organic materials, crystalline cellulose and phenolic resin. Phenolic resin yields a glassy carbon with low reactivity and porosity, and cellulose carbon is highly reactive and porous. By adjusting the ratio of these two materials in the precursor mixtures, the properties of the carbons produced can be controlled. We have identified the most favorable carbon precursor composition to be a cellulose:resin mass ratio of 6:4 for LSI formation of SiC. The optimum reaction conditions are a temperature of 1800°C, a pressure of 0.5 Torr of argon, and a time of 120 minutes. The fully dense net shape SiC material produced has a density of 2.96 g cm-3 (about 92% of pure SiC) and a SiC volume fraction of over 0.82. Kinetics of the LSI SiC formation process were studied by optical microscopy and quantitative digital image analysis. This study identified six reaction stages and provided important understanding of the process. Such knowledge can be used to further refine the LSI technique. Although the thermal conductivity of pure SiC at elevated temperatures is very high, thermal conductivities of most commercial SiC materials are much lower due to phonon scattering by impurities (e.g., sintering aids located at the grain boundaries of these materials). The thermal conductivity of our SiC was determined using the laser flash method and it is 214 W/mK at 373 K and 64 W/mK at 1273 K. These values are very close to those of pure SiC and are much higher than those of SiC materials made by industrial processes. Thus, SiC made by our LSI process is an ideally suited material for use in high temperature heat exchanger applications. Electron probe microanalysis (EPMA) and Auger electron spectroscopy (AES) were used to study the chemical composition of LSI SiC materials. Optimized low voltage microanalysis conditions for EPMA of SiC were theoretically determined. EPMA and AES measurements indicate that the SiC phase in our materials is slightly carbon rich. Carbon contamination was identified as a possible source of error during EPMA of SiC, and this error was corrected by using high purity SiC standards. Cellulose and phenolic resin carbons lack the well-defined atomic structures associated with common carbon allotropes. Atomic-scale structure was studied using high resolution transmission electron microscopy (HRTEM), nitrogen gas adsorption and helium gas pycnometry. These studies revealed that cellulose carbon exhibits a very high degree of atomic disorder and angstrom-scale porosity. It has a density of only 93% of that of pure graphite, with primarily sp2 bonding character and a low concentration of graphene clusters. Phenolic resin carbon shows more structural order and substantially less angstrom-scale porosity. Its density is 98% of that of pure graphite, and Fourier transform analysis of its TEM micrographs has revealed high concentrations of sp3 diamond and sp 2 graphene nano-clusters. This is the first time that diamond nano-clusters have been observed in carbons produced from phenolic resin.

Design of an interface to allow microfluidic electrophoresis chips to drink from the fire hose of the external environment.

PubMed

Attiya, S; Jemere, A B; Tang, T; Fitzpatrick, G; Seiler, K; Chiem, N; Harrison, D J

2001-01-01

An interface design is presented that facilitates automated sample introduction into an electrokinetic microchip, without perturbing the liquids within the microfluidic device. The design utilizes an interface flow channel with a volume flow resistance that is 0.54-4.1 x 10(6) times lower than the volume flow resistance of the electrokinetic fluid manifold used for mixing, reaction, separation, and analysis. A channel, 300 microm deep, 1 mm wide and 15-20 mm long, was etched in glass substrates to create the sample introduction channel (SIC) for a manifold of electrokinetic flow channels in the range of 10-13 microm depth and 36-275 microm width. Volume flow rates of up to 1 mL/min were pumped through the SIC without perturbing the solutions within the electrokinetic channel manifold. Calculations support this observation, suggesting a leakage flow to electroosmotic flow ratio of 0.1:1% in the electrokinetic channels, arising from 66-700 microL/min pressure-driven flow rates in the SIC. Peak heights for capillary electrophoresis separations in the electrokinetic flow manifold showed no dependence on whether the SIC pump was on or off. On-chip mixing, reaction and separation of anti-ovalbumin and ovalbumin could be performed with good quantitative results, independent of the SIC pump operation. Reproducibility of injection performance, estimated from peak height variations, ranged from 1.5-4%, depending upon the device design and the sample composition.

High-Temperature Active Soldering of SiC Particle-Reinforced Al-MMC Using a Novel ZnAlGaMgTi Filler Metal

NASA Astrophysics Data System (ADS)

Chen, Biqiang; Zhang, Guifeng; Zhang, Linjie; Xu, Tingting

2017-10-01

In order to broaden the application of SiC particle-reinforced aluminum matrix composite in electronics packaging, newly developed ZnAlGaMgTi filler with a low melting point of 418-441 °C was utilized as filler metal for active soldering of aluminum matrix composites (70 vol.%, SiCp/Al-MMCs) for the first time. The effect of loading pressure on joint properties of ZnAlGaMgTi active filler was investigated. The experimental results indicated that novel filler could successfully solder Al-MMCs, and the presence of Mg in the filler enhanced the penetration of Zn, while the forming of Zn-rich barrier layer influenced the active element MPD (melting point depressant) diffusion into parent composite, and the bulk-like (Mg-Si)-rich phase and Ti-containing phase were readily observed at the interface and bond seam. With the increase in loading pressure, the runout phenomenon appeared more significant, and the filler foil thickness and the Zn penetration depth varied pronouncedly. Sound joints with maximum shear strength of 29.6 MPa were produced at 480 °C at 1 MPa, and the crack occurred adjacent to the boundary of SiC particle and then propagated along the interface. A novel model describing the significant mutual diffusion of Al and Zn atoms between the parent material and solder was proposed.

Systems and methods for detecting a flame in a fuel nozzle of a gas turbine

DOEpatents

Kraemer, Gilbert Otto; Storey, James Michael; Lipinski, John; Mestroni, Julio Enrique; Williamson, David Lee; Marshall, Jason Randolph; Krull, Anthony

2013-05-07

A system may detect a flame about a fuel nozzle of a gas turbine. The gas turbine may have a compressor and a combustor. The system may include a first pressure sensor, a second pressure sensor, and a transducer. The first pressure sensor may detect a first pressure upstream of the fuel nozzle. The second pressure sensor may detect a second pressure downstream of the fuel nozzle. The transducer may be operable to detect a pressure difference between the first pressure sensor and the second pressure sensor.

Seasonal Ice Zone Reconnaissance Surveys Coordination and Ocean Profiles

DTIC Science & Technology

2015-09-30

Morison), UpTempO buoy measurements of sea surface temperature (SST), sea level atmospheric pressure ( SLP ), and velocity (Steele), and dropsonde...dropsondes, micro-aircraft), cloud top/base heights UpTempO buoys for understanding and prediction…. Steele UpTempO buoy drops for SLP , SST, SSS...Air Expendable Current Profiler, SLP = Sea Level atmospheric Pressure, SST= Seas Surface Temperature, A/C= aircraft, SIC=Sea Ice Concentration We

Atomically Flat Surfaces Developed for Improved Semiconductor Devices

NASA Technical Reports Server (NTRS)

Powell, J. Anthony

2001-01-01

New wide bandgap semiconductor materials are being developed to meet the diverse high temperature, -power, and -frequency demands of the aerospace industry. Two of the most promising emerging materials are silicon carbide (SiC) for high-temperature and high power applications and gallium nitride (GaN) for high-frequency and optical (blue-light-emitting diodes and lasers) applications. This past year Glenn scientists implemented a NASA-patented crystal growth process for producing arrays of device-size mesas whose tops are atomically flat (i.e., step-free). It is expected that these mesas can be used for fabricating SiC and GaN devices with major improvements in performance and lifetime. The promising new SiC and GaN devices are fabricated in thin-crystal films (known as epi films) that are grown on commercial single-crystal SiC wafers. At this time, no commercial GaN wafers exist. Crystal defects, known as screw defects and micropipes, that are present in the commercial SiC wafers propagate into the epi films and degrade the performance and lifetime of subsequently fabricated devices. The new technology isolates the screw defects in a small percentage of small device-size mesas on the surface of commercial SiC wafers. This enables atomically flat surfaces to be grown on the remaining defect-free mesas. We believe that the atomically flat mesas can also be used to grow GaN epi films with a much lower defect density than in the GaN epi films currently being grown. Much improved devices are expected from these improved low-defect epi films. Surface-sensitive SiC devices such as Schottky diodes and field effect transistors should benefit from atomically flat substrates. Also, we believe that the atomically flat SiC surface will be an ideal surface on which to fabricate nanoscale sensors and devices. The process for achieving atomically flat surfaces is illustrated. The surface steps present on the "as-received" commercial SiC wafer is also illustrated. because of the small tilt angle between the crystal "basal" plane and the polished wafer surface. These steps are used in normal SiC epi film growth in a process known as stepflow growth to produce material for device fabrication. In the new process, the first step is to etch an array of mesas on the SiC wafer top surface. Then, epi film growth is carried out in the step flow fashion until all steps have grown themselves out of existence on each defect-free mesa. If the size of the mesas is sufficiently small (about 0.1 by 0.1 mm), then only a small percentage of the mesas will contain an undesired screw defect. Mesas with screw defects supply steps during the growth process, allowing a rough surface with unwanted hillocks to form on the mesa. The improvement in SiC epi surface morphology achievable with the new technology is shown. An atomic force microscope image of a typical SiC commercial epilayer surface is also shown. A similar image of an SiC atomically flat epi surface grown in a Glenn laboratory is given. With the current screw defect density of commercial wafers (about 5000 defects/cm2), the yield of atomically free 0.1 by 0.l mm mesas is expected to be about 90 percent. This is large enough for many types of electronic and optical devices. The implementation of this new technology was recently published in Applied Physics Letters. This work was initially carried out in-house under a Director's Discretionary Fund project and is currently being further developed under the Information Technology Base Program.

Molecular equilibria and condensation sequences in carbon rich gases

NASA Technical Reports Server (NTRS)

Sharp, C. M.; Wasserburg, G. J.

1993-01-01

Chemical equilibria in stellar atmospheres have been investigated by many authors. Lattimer, Schramm, and Grossman presented calculations in both O rich and C rich environments and predicted possible presolar condensates. A recent paper by Cherchneff and Barker considered a C rich composition with PAH's included in the calculations. However, the condensation sequences of C bearing species have not been investigated in detail. In a carbon rich gas surrounding an AGB star, it is often assumed that graphite (or diamond) condenses out before TiC and SiC. However, Lattimer et al. found some conditions under which TiC condenses before graphite. We have performed molecular equilibrium calculations to establish the stability fields of C(s), TiC(s), and SiC(s) and other high temperature phases under conditions of different pressures and C/O. The preserved presolar interstellar dust grains so far discovered in meteorites are graphite, diamond, SiC, TiC, and possibly Al2O3.

Thermal equation of state of silicon carbide

DOE PAGES

Wang, Yuejian; Liu, Zhi T. Y.; Khare, Sanjay V.; ...

2016-02-11

A large volume press coupled with in-situ energy-dispersive synchrotron X-ray was used to probe the change of silicon carbide (SiC) under high pressure and temperature (P-T) up to 8.1 GPa and 1100 K. The obtained pressure–volume–temperature (P-V-T) data were fitted to a modified high-T Birch-Murnaghan equation of state, yielding values of a series of thermo-elastic parameters, such as, the ambient bulk modulus K To = 237(2) GPa, temperature derivative of bulk modulus at constant pressure (∂K/∂T)P = -0.037(4) GPa K -1, volumetric thermal expansivity α(0, T)=a+bT with a = 5.77(1)×10 -6 K -1 and b = 1.36(2)×10 -8 K -2,more » and pressure derivative of thermal expansion at constant temperature (∂α/∂P) T =6.53±0.64×10 -7 K -1GPa -1. Furthermore, we found the temperature derivative of bulk modulus at constant volume, (∂K T/∂T) V, equal to -0.028(4) GPa K -1 by using a thermal pressure approach. In addition, the elastic properties of SiC were determined by density functional theory through the calculation of Helmholtz free energy. Lastly, the computed results generally agree well with the experimental values.« less

Packaging Technology Designed, Fabricated, and Assembled for High-Temperature SiC Microsystems

NASA Technical Reports Server (NTRS)

Chen, Liang-Yu

2003-01-01

A series of ceramic substrates and thick-film metalization-based prototype microsystem packages designed for silicon carbide (SiC) high-temperature microsystems have been developed for operation in 500 C harsh environments. These prototype packages were designed, fabricated, and assembled at the NASA Glenn Research Center. Both the electrical interconnection system and the die-attach scheme for this packaging system have been tested extensively at high temperatures. Printed circuit boards used to interconnect these chip-level packages and passive components also are being fabricated and tested. NASA space and aeronautical missions need harsh-environment, especially high-temperature, operable microsystems for probing the inner solar planets and for in situ monitoring and control of next-generation aeronautical engines. Various SiC high-temperature-operable microelectromechanical system (MEMS) sensors, actuators, and electronics have been demonstrated at temperatures as high as 600 C, but most of these devices were demonstrated only in the laboratory environment partially because systematic packaging technology for supporting these devices at temperatures of 500 C and beyond was not available. Thus, the development of a systematic high-temperature packaging technology is essential for both in situ testing and the commercialization of high-temperature SiC MEMS. Researchers at Glenn developed new prototype packages for high-temperature microsystems using ceramic substrates (aluminum nitride and 96- and 90-wt% aluminum oxides) and gold (Au) thick-film metalization. Packaging components, which include a thick-film metalization-based wirebond interconnection system and a low-electrical-resistance SiC die-attachment scheme, have been tested at temperatures up to 500 C. The interconnection system composed of Au thick-film printed wire and 1-mil Au wire bond was tested in 500 C oxidizing air with and without 50-mA direct current for over 5000 hr. The Au thick-film metalization-based wirebond electrical interconnection system was also tested in an extremely dynamic thermal environment to assess thermal reliability. The I-V curve1 of a SiC high-temperature diode was measured in oxidizing air at 500 C for 1000 hr to electrically test the Au thick-film material-based die-attach assembly.

SiC Optically Modulated Field-Effect Transistor

NASA Technical Reports Server (NTRS)

Tabib-Azar, Massood

2009-01-01

An optically modulated field-effect transistor (OFET) based on a silicon carbide junction field-effect transistor (JFET) is under study as, potentially, a prototype of devices that could be useful for detecting ultraviolet light. The SiC OFET is an experimental device that is one of several devices, including commercial and experimental photodiodes, that were initially evaluated as detectors of ultraviolet light from combustion and that could be incorporated into SiC integrated circuits to be designed to function as combustion sensors. The ultraviolet-detection sensitivity of the photodiodes was found to be less than desired, such that it would be necessary to process their outputs using high-gain amplification circuitry. On the other hand, in principle, the function of the OFET could be characterized as a combination of detection and amplification. In effect, its sensitivity could be considerably greater than that of a photodiode, such that the need for amplification external to the photodetector could be reduced or eliminated. The experimental SiC OFET was made by processes similar to JFET-fabrication processes developed at Glenn Research Center. The gate of the OFET is very long, wide, and thin, relative to the gates of typical prior SiC JFETs. Unlike in prior SiC FETs, the gate is almost completely transparent to near-ultraviolet and visible light. More specifically: The OFET includes a p+ gate layer less than 1/4 m thick, through which photons can be transported efficiently to the p+/p body interface. The gate is relatively long and wide (about 0.5 by 0.5 mm), such that holes generated at the body interface form a depletion layer that modulates the conductivity of the channel between the drain and the source. The exact physical mechanism of modulation of conductivity is a subject of continuing research. It is known that injection of minority charge carriers (in this case, holes) at the interface exerts a strong effect on the channel, resulting in amplification of the photon-detection signal. A family of operating curves characterizing the OFET can be generated in a series of measurements performed at different intensities of incident ultraviolet light.

SiC nanoparticles-modified glassy carbon electrodes for simultaneous determination of purine and pyrimidine DNA bases.

PubMed

Ghavami, Raouf; Salimi, Abdollah; Navaee, Aso

2011-05-15

For the first time a novel and simple electrochemical method was used for simultaneous detection of DNA bases (guanine, adenine, thymine and cytosine) without any pretreatment or separation process. Glassy carbon electrode modified with silicon carbide nanoparticles (SiCNP/GC), have been used for electrocatalytic oxidation of purine (guanine and adenine) and pyrimidine bases (thymine and cytosine) nucleotides. Field emission scanning electron microscopy (FE-SEM) and transmission electron microscopy (TEM) techniques were used to examine the structure of the SiCNP/GC modified electrode. The modified electrode shows excellent electrocatalytic activity toward guanine, adenine, thymine and cytosine. Differential pulse voltammetry (DPV) was proposed for simultaneous determination of four DNA bases. The effects of different parameters such as the thickness of SiC layer, pulse amplitude, scan rate, supporting electrolyte composition and pH were optimized to obtain the best peak potential separation and higher sensitivity. Detection limit, sensitivity and linear concentration range of the modified electrode toward proposed analytes were calculated for, guanine, adenine, thymine and cytosine, respectively. As shown this sensor can be used for nanomolar or micromolar detection of different DNA bases simultaneously or individually. This sensor also exhibits good stability, reproducibility and long lifetime. Copyright © 2011 Elsevier B.V. All rights reserved.

Determination of He and D permeability of neutron-irradiated SiC tubes to examine the potential for release due to micro-cracking

DOE Office of Scientific and Technical Information (OSTI.GOV)

Katoh, Yutai; Hu, Xunxiang; Koyanagi, Takaaki

Driven by the need to enlarge the safety margins of light water reactors in both design-basis and beyond-design-basis accident scenarios, the research and development of accident-tolerant fuel (ATF) has become an importance topic in the nuclear engineering and materials community. Continuous SiC fiber-reinforced SiC matrix ceramic composites are under consideration as a replacement for traditional zirconium alloy cladding owing to their high-temperature stability, chemical inertness, and exceptional irradiation resistance. Among the key technical feasibility issues, potential failure of the fission product containment due to probabilistic penetrating cracking has been identified as one of the two most critical feasibility issues, togethermore » with the radiolysisassisted hydrothermal corrosion of SiC. The experimental capability to evaluate the hermeticity of SiC-based claddings is an urgent need. In this report, we present the development of a comprehensive permeation testing station established in the Low Activation Materials Development and Analysis laboratory at Oak Ridge National Laboratory. Preliminary results for the hermeticity evaluation of un-irradiated monolithic SiC tubes, uncoated and coated SiC/SiC composite tubes, and neutron-irradiated monolithic SiC tubes at room temperature are exhibited. The results indicate that this new permeation testing station is capable of evaluating the hermeticity of SiC-based tubes by determining the helium and deuterium permeation flux as a function of gas pressure at a high resolution of 8.07 x 10 -12 atm-cc/s for helium and 2.83 x 10 -12 atm-cc/s for deuterium, respectively. The detection limit of this system is sufficient to evaluate the maximum allowable helium leakage rate of lab-scale tubular samples, which is linearly extrapolated from the evaluation standard used for a commercial as-manufactured light water reactor fuel rod at room temperature. The un-irradiated monolithic SiC tube is hermetic, as is manifested by the un-detectable deuterium permeation flux at various feeding gas pressures. A large helium leakage rate was detected for the uncoated SiC/SiC composite tube exposed to atmosphere, indicating it is inherently not hermetic. The hermeticity of coated SiC/SiC composite tubes is strongly dependent on the coating materials and the preparation of the substrate SiC/SiC composite samples. To simulate the practical application environment, monolithic CVD SiC tubes were exposed to neutron irradiation at the High Flux Isotope Reactor under high heat flux from the internal surface to the external surface. Although finite element analysis and resonant ultrasound spectroscopy measurement indicated that the combined neutron irradiation and high heat flux gave rise to a high probability of cracking within the sample, the hermeticity evaluation of the tested sample still exhibited gas tightness, emphasizing that SiC cracking is inherently a statistical phenomenon. The developed permeation testing station is capable of measuring the gas permeation flux in the range of interest with full confidence based on the presented results. It is considered a critical pre- /post-irradiation examination technique to characterize SiC-based cladding materials in asreceived and irradiated states to aid the research and development of ATF.« less

X-ray reflectometry and simulation of the parameters of SiC epitaxial films on Si(111), grown by the atomic substitution method

NASA Astrophysics Data System (ADS)

Kukushkin, S. A.; Nussupov, K. Kh.; Osipov, A. V.; Beisenkhanov, N. B.; Bakranova, D. I.

2017-05-01

The structure and composition of SiC nanolayers are comprehensively studied by X-ray reflectometry, IR-spectroscopy, and atomic-force microscopy (AFM) methods for the first time. SiC films were synthesized by the new method of topochemical substitution of substrate atoms at various temperatures and pressure of CO active gas on the surface of high-resistivity low-dislocation single-crystal n-type silicon (111). Based on an analysis and generalization of experimental data obtained using X-ray reflectometry, IR spectroscopy, and AFM methods, a structural model of SiC films on Si was proposed. According to this model, silicon carbide film consists of a number of layers parallel to the substrate, reminiscent of a layer cake. The composition and thickness of each layer entering the film structure is experimentally determined. It was found that all samples contain superstoichiometric carbon; however, its structure is significantly different for the samples synthesized at temperatures of 1250 and 1330°C, respectively. In the former case, the film surface is saturated with silicon vacancies and carbon in the structurally loose form reminiscent of HOPG carbon. In the films grown at 1330°C, carbon is in a dense structure with a close-to-diamond density.

Synthesis and Comparison of Two cBN Composites with Starting Ternary Carbide Binders

NASA Astrophysics Data System (ADS)

Yue, Zhenming; Yang, Limin; Gong, Jianhong; Gao, Jun

2018-04-01

Ti3SiC2 and Ti3AlC2 are two promising binders for the ultrahard composite polycrystalline cubic boron nitride (PcBN). In this study, the cBN composites with Ti3SiC2 and Ti3AlC2 binders with different binder contents were synthesized under the same high pressure ( 5.5 GPa) and high temperature (1350 °C) conditions. Their mechanical properties were measured separately, including Vickers hardness, bending hardening, and compression hardening. Together with XRD results, the phase compounds were also investigated. The decomposition and reaction processes were affected by binder content. Some new compounds formed during sintering, these compounds were TiC, TiSi2, SiC, TiB2, SiB4, TiB2, and TiC0.7N0.3 in Ti3SiC2-cBN composites, as well as TiC0.7N0.3, TiB2, and AlN in Ti3AlC2-cBN composites. The microstructure of the cracks surface was obtained after the bending tests, and was used to further investigate and compare their crack mode by SEM. The crack surface profile and elementary analysis on the oxidative surface were also discussed.

Safety and efficacy of fibrin glue versus infinity suture in SICS with extended scleral flap

PubMed Central

Ambastha, Anita; Kusumesh, Rakhi; Bhasker, Gyan; Sinha, Bibhuti Prassan

2018-01-01

Purpose: To study the safety and efficacy of biologic fibrin glue (FG) in comparison with infinity suture in SICS with compromised scleral flap. Methods: A retrospective comparative study of patients who were treated with FG (Group A) with 10–0 nylon (Group B) as sealing agent for intraoperative compromised tunnels in SICS. Parameters noted were postoperative inflammation, wound integrity, anterior chamber (AC) depth, intraocular pressure (IOP), and surgically induced astigmatism (SIA) at postoperative day 1, 4 weeks, 6 weeks, and 6 months, respectively. Epi Info 7 software and SIA calculator, Version 2.1 were used to analyze the result. Results: We reviewed the two groups of 18 patients each and noted that there was no statistically significant difference in postoperative inflammation (P > 0.05), AC depth (P > 0.05), and IOP (P > 0.05) between both groups at each postoperative visit. One patient in Group A showed postoperative shallow AC and subconjunctival bleb. Exposed sutures causing foreign body sensation had to be removed in five patients in Group B. At the end of 6-month postoperative period, no statistically significant difference was found in SIA (P = 0.92) between the two groups. Conclusion: Biologic FG can be safely used in securing the compromised scleral incisions in SICS. It also avoids suture-related complications. PMID:29676309

Synthesis and Comparison of Two cBN Composites with Starting Ternary Carbide Binders

NASA Astrophysics Data System (ADS)

Yue, Zhenming; Yang, Limin; Gong, Jianhong; Gao, Jun

2018-05-01

Ti3SiC2 and Ti3AlC2 are two promising binders for the ultrahard composite polycrystalline cubic boron nitride (PcBN). In this study, the cBN composites with Ti3SiC2 and Ti3AlC2 binders with different binder contents were synthesized under the same high pressure ( 5.5 GPa) and high temperature (1350 °C) conditions. Their mechanical properties were measured separately, including Vickers hardness, bending hardening, and compression hardening. Together with XRD results, the phase compounds were also investigated. The decomposition and reaction processes were affected by binder content. Some new compounds formed during sintering, these compounds were TiC, TiSi2, SiC, TiB2, SiB4, TiB2, and TiC0.7N0.3 in Ti3SiC2-cBN composites, as well as TiC0.7N0.3, TiB2, and AlN in Ti3AlC2-cBN composites. The microstructure of the cracks surface was obtained after the bending tests, and was used to further investigate and compare their crack mode by SEM. The crack surface profile and elementary analysis on the oxidative surface were also discussed.

The digital compensation technology system for automotive pressure sensor

NASA Astrophysics Data System (ADS)

Guo, Bin; Li, Quanling; Lu, Yi; Luo, Zai

2011-05-01

Piezoresistive pressure sensor be made of semiconductor silicon based on Piezoresistive phenomenon, has many characteristics. But since the temperature effect of semiconductor, the performance of silicon sensor is also changed by temperature, and the pressure sensor without temperature drift can not be produced at present. This paper briefly describe the principles of sensors, the function of pressure sensor and the various types of compensation method, design the detailed digital compensation program for automotive pressure sensor. Simulation-Digital mixed signal conditioning is used in this dissertation, adopt signal conditioning chip MAX1452. AVR singlechip ATMEGA128 and other apparatus; fulfill the design of digital pressure sensor hardware circuit and singlechip hardware circuit; simultaneously design the singlechip software; Digital pressure sensor hardware circuit is used to implementing the correction and compensation of sensor; singlechip hardware circuit is used to implementing to controll the correction and compensation of pressure sensor; singlechip software is used to implementing to fulfill compensation arithmetic. In the end, it implement to measure the output of sensor, and contrast to the data of non-compensation, the outcome indicates that the compensation precision of compensated sensor output is obviously better than non-compensation sensor, not only improving the compensation precision but also increasing the stabilization of pressure sensor.

Thermally Stable Ohmic Contacts on Silicon Carbide Developed for High- Temperature Sensors and Electronics

NASA Technical Reports Server (NTRS)

Okojie, Robert S.

2001-01-01

The NASA aerospace program, in particular, requires breakthrough instrumentation inside the combustion chambers of engines for the purpose of, among other things, improving computational fluid dynamics code validation and active engine behavioral control (combustion, flow, stall, and noise). This environment can be as high as 600 degrees Celsius, which is beyond the capability of silicon and gallium arsenide devices. Silicon-carbide- (SiC-) based devices appear to be the most technologically mature among wide-bandgap semiconductors with the proven capability to function at temperatures above 500 degrees Celsius. However, the contact metalization of SiC degrades severely beyond this temperature because of factors such as the interdiffusion between layers, oxidation of the contact, and compositional and microstructural changes at the metal/semiconductor interface. These mechanisms have been proven to be device killers. Very costly and weight-adding packaging schemes that include vacuum sealing are sometimes adopted as a solution.

High Resolution and Large Dynamic Range Resonant Pressure Sensor Based on Q-Factor Measurement

NASA Technical Reports Server (NTRS)

Gutierrez, Roman C. (Inventor); Stell, Christopher B. (Inventor); Tang, Tony K. (Inventor); Vorperian, Vatche (Inventor); Wilcox, Jaroslava (Inventor); Shcheglov, Kirill (Inventor); Kaiser, William J. (Inventor)

2000-01-01

A pressure sensor has a high degree of accuracy over a wide range of pressures. Using a pressure sensor relying upon resonant oscillations to determine pressure, a driving circuit drives such a pressure sensor at resonance and tracks resonant frequency and amplitude shifts with changes in pressure. Pressure changes affect the Q-factor of the resonating portion of the pressure sensor. Such Q-factor changes are detected by the driving/sensing circuit which in turn tracks the changes in resonant frequency to maintain the pressure sensor at resonance. Changes in the Q-factor are reflected in changes of amplitude of the resonating pressure sensor. In response, upon sensing the changes in the amplitude, the driving circuit changes the force or strength of the electrostatic driving signal to maintain the resonator at constant amplitude. The amplitude of the driving signals become a direct measure of the changes in pressure as the operating characteristics of the resonator give rise to a linear response curve for the amplitude of the driving signal. Pressure change resolution is on the order of 10(exp -6) torr over a range spanning from 7,600 torr to 10(exp -6) torr. No temperature compensation for the pressure sensor of the present invention is foreseen. Power requirements for the pressure sensor are generally minimal due to the low-loss mechanical design of the resonating pressure sensor and the simple control electronics.

Oxidation Behavior of HfB2-SiC Materials in Dissociated Environments

NASA Technical Reports Server (NTRS)

Ellerby, Don; Irby, Edward; Johnson, Sylvia M.; Beckman, Sarah; Gusman, Michael; Gasch, Matthew

2002-01-01

Hafnium diboride based materials have shown promise for use in extremely high temperature applications, such as sharp leading edges on future reentry vehicles. During reentry, the oxygen and nitrogen in the atmosphere are dissociated by the shock layer ahead of the sharp leading edge such that surface reactions are determined by reactions of monatomic oxygen and nitrogen rather than O2, and N2. Simulation of the reentry environment on the ground requires the use of arc jet (plasma jet) facilities that provide monatomic species and are the closest approximation to actual flight conditions. Simple static or flowing oxidation studies under ambient pressures and atmospheres are not adequate to develop an understanding of a materials behavior in flight. Arc jet testing is required to provide the appropriate stagnation pressures, heat fluxes, enthalpies, heat loads and atmospheres encountered during flight. This work looks at the response of HfB2/SiC materials exposed to various simulated reentry environments.

Characterization of Ceramic Matrix Composite Vane Subelements Subjected to Rig Testing in a Gas Turbine Environment

NASA Technical Reports Server (NTRS)

Verrilli, Michael; Calomino, Anthony; Thomas, David J.; Robinson, R. Craig

2004-01-01

Vane subelements were fabricated from a silicon carbide fiber-reinforced silicon carbide matrix (SiC/SiC) composite. A cross-sectional slice of an aircraft engine metal vane was the basis of the vane subelement geometry. To fabricate the small radius of the vane's trailing edge using stiff Sylramic SiC fibers, a unique SiC fiber architecture was developed. A test configuration for the vanes in a high pressure gas turbine environment was designed and fabricated. Testing was conducted using a pressure of 6 atm and combustion flow rate of 0.5 kg/sec, and consisted of fifty hours of steady state operation followed by 102 2-minute thermal cycles. A surface temperature of 1320 C was obtained for the EBC-coated SiC/SiC vane subelement. This paper will briefly discuss the vane fabrication, test configuration, and results of the vane testing. The emphasis of the paper is on characterization of the post-test condition of the vanes.

Sequential Injection Chromatography with an Ultra-short Monolithic Column for the Low-Pressure Separation of α-Tocopherol and γ-Oryzanol in Vegetable Oils and Nutrition Supplements.

PubMed

Thaithet, Sujitra; Kradtap Hartwell, Supaporn; Lapanantnoppakhun, Somchai

2017-01-01

A low-pressure separation procedure of α-tocopherol and γ-oryzanol was developed based on a sequential injection chromatography (SIC) system coupled with an ultra-short (5 mm) C-18 monolithic column, as a lower cost and more compact alternative to the HPLC system. A green sample preparation, dilution with a small amount of hexane followed by liquid-liquid extraction with 80% ethanol, was proposed. Very good separation resolution (R s = 3.26), a satisfactory separation time (10 min) and a total run time including column equilibration (16 min) were achieved. The linear working range was found to be 0.4 - 40 μg with R 2 being more than 0.99. The detection limits of both analytes were 0.28 μg with the repeatability within 5% RSD (n = 7). Quantitative analyses of the two analytes in vegetable oil and nutrition supplement samples, using the proposed SIC method, agree well with the results from HPLC.

Instrumentation Of C-Sic Tiles To Quantify Their Mechanical Behavior During Atmospheric Re-Entry

NASA Astrophysics Data System (ADS)

Pereira, C.; Romano, R.; Walz, S.; Schwarz, R.; Fremont, E.; Girard, F.

2011-05-01

The windward surfaces of re-entry vehicles are exposed to large thermal gradients and pressure loadings which result in changes to the surface topology and high transient loading of fixation elements. In particular positive steps result in local aero-thermodynamic effects with increased thermal loading of the adjacent tiles. An objective of the in-flight instrumentation of IXV is to document the aerodynamic and thermal loads on the tiles including deflection and the evolution of steps along the vehicle. To this end a combination of high temperature strain gauges and thermocouples will be placed at the metallic stand-offs behind the highest loaded tiles and on one half of the nose cap attachments. The deflection at the edges of the tiles and the steps will be measured using linear variable differential sensors (L VDT). This paper presents background information, the rationale for the chosen measurement points, the design evolution and the validation of the instrumentation both in terms of functionality and ability to withstand the launch and re-entry environment of the IXV

Recent advance in high manufacturing readiness level and high temperature CMOS mixed-signal integrated circuits on silicon carbide

NASA Astrophysics Data System (ADS)

Weng, M. H.; Clark, D. T.; Wright, S. N.; Gordon, D. L.; Duncan, M. A.; Kirkham, S. J.; Idris, M. I.; Chan, H. K.; Young, R. A. R.; Ramsay, E. P.; Wright, N. G.; Horsfall, A. B.

2017-05-01

A high manufacturing readiness level silicon carbide (SiC) CMOS technology is presented. The unique process flow enables the monolithic integration of pMOS and nMOS transistors with passive circuit elements capable of operation at temperatures of 300 °C and beyond. Critical to this functionality is the behaviour of the gate dielectric and data for high temperature capacitance-voltage measurements are reported for SiO2/4H-SiC (n and p type) MOS structures. In addition, a summary of the long term reliability for a range of structures including contact chains to both n-type and p-type SiC, as well as simple logic circuits is presented, showing function after 2000 h at 300 °C. Circuit data is also presented for the performance of digital logic devices, a 4 to 1 analogue multiplexer and a configurable timer operating over a wide temperature range. A high temperature micro-oven system has been utilised to enable the high temperature testing and stressing of units assembled in ceramic dual in line packages, including a high temperature small form-factor SiC based bridge leg power module prototype, operated for over 1000 h at 300 °C. The data presented show that SiC CMOS is a key enabling technology in high temperature integrated circuit design. In particular it provides the ability to realise sensor interface circuits capable of operating above 300 °C, accommodate shifts in key parameters enabling deployment in applications including automotive, aerospace and deep well drilling.

An Annular Mechanical Temperature Compensation Structure for Gas-Sealed Capacitive Pressure Sensor

PubMed Central

Hao, Xiuchun; Jiang, Yonggang; Takao, Hidekuni; Maenaka, Kazusuke; Higuchi, Kohei

2012-01-01

A novel gas-sealed capacitive pressure sensor with a temperature compensation structure is reported. The pressure sensor is sealed by Au-Au diffusion bonding under a nitrogen ambient with a pressure of 100 kPa and integrated with a platinum resistor-based temperature sensor for human activity monitoring applications. The capacitance-pressure and capacitance-temperature characteristics of the gas-sealed capacitive pressure sensor without temperature compensation structure are calculated. It is found by simulation that a ring-shaped structure on the diaphragm of the pressure sensor can mechanically suppress the thermal expansion effect of the sealed gas in the cavity. Pressure sensors without/with temperature compensation structures are fabricated and measured. Through measured results, it is verified that the calculation model is accurate. Using the compensation structures with a 900 μm inner radius, the measured temperature coefficient is much reduced as compared to that of the pressure sensor without compensation. The sensitivities of the pressure sensor before and after compensation are almost the same in the pressure range from 80 kPa to 100 kPa. PMID:22969385

Improved Oxidation Resistance of 3-D Carbon/Carbon Composites

DTIC Science & Technology

1994-01-14

extraction process (which might be the extraction of the flavoring agents from hops or decaffeination of coffee beans) to point out how the pressure dependent...SiC) were made by a process termed Supercritical Fluid Infiltration. A preceramic polymer, e.g., a polycarbosilane which can pyrolyze to form SiC, is...using supercritical propane (in a process termed increasing pressure profiling), and it was found that some of the low molecular weight fractions gave

Pressure-reaction synthesis of titanium composite materials

DOEpatents

Oden, Laurance L.; Ochs, Thomas L.; Turner, Paul C.

1993-01-01

A pressure-reaction synthesis process for producing increased stiffness and improved strength-to-weight ratio titanium metal matrix composite materials comprising exothermically reacting a titanium powder or titanium powder alloys with non-metal powders or gas selected from the group consisting of C, B, N, BN, B.sub.4 C, SiC and Si.sub.3 N.sub.4 at temperatures from about 900.degree. to about 1300.degree. C., for about 5 to about 30 minutes in a forming die under pressures of from about 1000 to 5000 psi.

Electronically scanned pressure sensor module with in SITU calibration capability

NASA Technical Reports Server (NTRS)

Gross, C. (Inventor)

1978-01-01

This high data rate pressure sensor module helps reduce energy consumption in wind tunnel facilities without loss of measurement accuracy. The sensor module allows for nearly a two order of magnitude increase in data rates over conventional electromechanically scanned pressure sampling techniques. The module consists of 16 solid state pressure sensor chips and signal multiplexing electronics integrally mounted to a four position pressure selector switch. One of the four positions of the pressure selector switch allows the in situ calibration of the 16 pressure sensors; the three other positions allow 48 channels (three sets of 16) pressure inputs to be measured by the sensors. The small size of the sensor module will allow mounting within many wind tunnel models, thus eliminating long tube lengths and their corresponding slow pressure response.

Fast Solar Polarimeter: Prototype Characterization and First Results

NASA Astrophysics Data System (ADS)

Iglesias, F. A.; Feller, A.; Krishnappa, N.; Solanki, S. K.

2016-04-01

Due to the differential and non-simultaneous nature of polarization measurements, seeing induced crosstalk (SIC) and seeing limited spatial resolution can easily counterbalance the benefits of solar imaging polarimetry from the ground. The development of instrumental techniques to treat these issues is necessary to fully exploit the next generation of large-aperture solar facilities, and maintain ground-based data at a competitive level with respect to its space-based counterpart. In particular, considering that many open questions in modern solar physics demand data with challenging specifications of resolution and polarimetric sensitivity that can only be achieved with large telescope apertures (Stenflo 1999). Even if state-of-the-art adaptive optics systems greatly improve image quality, their limited correction —due to finite bandwidth, mode number and seeing anisoplanat- ism— produces large residual values of SIC (Krishnappa & Feller 2012). Dual beam polarimeters are commonly used to reduce SIC between the intensity and polarization signals, however, they cannot compensate for the SIC introduced between circular and linear polarization, which can be relevant for high-precision polarimetry. It is known that fast modulation effectively reduces SIC, but the demodulation of the corresponding intensity signals imposes hard requirements on the frame rate of the associated cameras. One way to avoid a fast sensor, is to decouple the camera readout from the intensity demodulation step. This concept is the cornerstone of the very successful Zurich Imaging Polarimeter (ZIMPOL). Even though the ZIMPOL solution allows the detection of very faint signals (˜10-5), its design is not suitable for high-spatial-resolution applications. We are developing a polarimeter that focuses on both spatial resolution (<0.5 arcsec) and polarimetric sensitivity (10-4). The prototype of this Fast Solar Polarimeter (FSP, see Feller et al. 2014), employs a high frame-rate (400 fps), low-noise (<4 e- RMS), pnCCD camera (Hartmann et al. 2006) that is read in synchronization with a polarization modulator based on ferroelectric liquid crystals. The modulator package is similar to the SOLIS (Keller et al. 2003) design and optimized to have an achromatic total polarimetric efficiency above 80 % in the 400-700 nm wavelength range. The fast modulation frequency of FSP, yielding up to 100 full-Stokes measurements per second, and high duty cycle (>95%), have the double benefit of reducing seeing induced artifacts and improving the final spatial resolution by providing an optimal regime for the application of post-facto image reconstruction techniques. In this poster we describe the FSP prototype, including the characterization results, a technique to correct image smearing due to the sensor frame transfer (Iglesias et al. 2015) and some of the first measurements obtained with the 68-cm Vacuum Tower Telescope located at the Observatorio del Teide, Spain.

Reliable Breakdown Obtained in Silicon Carbide Rectifiers

NASA Technical Reports Server (NTRS)

Neudeck, Philip G.

1997-01-01

The High Temperature Integrated Electronics and Sensor (HTIES) Program at the NASA Lewis Research Center is currently developing silicon carbide (SiC) for use in harsh conditions where silicon, the semiconductor used in nearly all of today's electronics, cannot function. Silicon carbide's demonstrated ability to function under extreme high-temperature, high-power, and/or high-radiation conditions will enable significant improvements to a far-ranging variety of applications and systems. These range from improved high-voltage switching for energy savings in public electric power distribution and electric vehicles, to more powerful microwave electronics for radar and cellular communications, to sensor and controls for cleaner-burning, more fuel-efficient jet aircraft and automobile engines.

A Graphene-Based Resistive Pressure Sensor with Record-High Sensitivity in a Wide Pressure Range

PubMed Central

Tian, He; Shu, Yi; Wang, Xue-Feng; Mohammad, Mohammad Ali; Bie, Zhi; Xie, Qian-Yi; Li, Cheng; Mi, Wen-Tian; Yang, Yi; Ren, Tian-Ling

2015-01-01

Pressure sensors are a key component in electronic skin (e-skin) sensing systems. Most reported resistive pressure sensors have a high sensitivity at low pressures (<5 kPa) to enable ultra-sensitive detection. However, the sensitivity drops significantly at high pressures (>5 kPa), which is inadequate for practical applications. For example, actions like a gentle touch and object manipulation have pressures below 10 kPa, and 10–100 kPa, respectively. Maintaining a high sensitivity in a wide pressure range is in great demand. Here, a flexible, wide range and ultra-sensitive resistive pressure sensor with a foam-like structure based on laser-scribed graphene (LSG) is demonstrated. Benefitting from the large spacing between graphene layers and the unique v-shaped microstructure of the LSG, the sensitivity of the pressure sensor is as high as 0.96 kPa−1 in a wide pressure range (0 ~ 50 kPa). Considering both sensitivity and pressure sensing range, the pressure sensor developed in this work is the best among all reported pressure sensors to date. A model of the LSG pressure sensor is also established, which agrees well with the experimental results. This work indicates that laser scribed flexible graphene pressure sensors could be widely used for artificial e-skin, medical-sensing, bio-sensing and many other areas. PMID:25721159

High pressure fiber optic sensor system

DOE Office of Scientific and Technical Information (OSTI.GOV)

Guida, Renato; Xia, Hua; Lee, Boon K

2013-11-26

The present application provides a fiber optic sensor system. The fiber optic sensor system may include a small diameter bellows, a large diameter bellows, and a fiber optic pressure sensor attached to the small diameter bellows. Contraction of the large diameter bellows under an applied pressure may cause the small diameter bellows to expand such that the fiber optic pressure sensor may measure the applied pressure.

Implanted Blood-Pressure-Measuring Device

NASA Technical Reports Server (NTRS)

Fischell, Robert E.

1988-01-01

Arterial pressure compared with ambient bodily-fluid pressure. Implanted apparatus, capable of measuring blood pressure of patient, includes differential-pressure transducer connected to pressure sensor positioned in major artery. Electrical signal is function of differential pressure between blood-pressure sensor and reference-pressure sensor transmitted through skin of patient to recorder or indicator.

Development of microbend sensors for pressure, load, and displacement measurements in civil engineering

NASA Astrophysics Data System (ADS)

Grossman, Barry G.; Cosentino, Paul J.; Doi, Shinobu; Kumar, Girish; Verghese, John

1994-05-01

We are developing low cost, rugged, and reliable fiberoptic sensors to meet current and future needs in civil engineering, including those of smart civil structures. Our work has concentrated on load, pressure, and displacement sensors, including pore water pressure sensors. We have built and demonstrated sensors in the laboratory with loads up to 50 lb., water pressures of 100 psi, and displacements up to 1 mm. Repeatability of sensor measurements are within 5% and are being improved with continued development. The range and sensitivity of the sensors can be easily changed without changing the basic sensor design. We also have multiplexed two water pressure sensors on a single fiber. We describe the sensor construction and experimental performance.

A miniature 48-channel pressure sensor module capable of in situ calibration

NASA Technical Reports Server (NTRS)

Gross, C.; Juanarena, D. B.

1977-01-01

A new high data rate pressure sensor module with in situ calibration capability has been developed by the Langley Research Center to help reduce energy consumption in wind-tunnel facilities without loss of measurement accuracy. The sensor module allows for nearly a two order of magnitude increase in data rates over conventional electromechanically scanned pressure sampling techniques. This module consists of 16 solid state pressure sensor chips and signal multiplexing electronics integrally mounted to a four position pressure selector switch. One of the four positions of the pressure selector switch allows the in situ calibration of the 16 pressure sensors; the three other positions allow 48 channels (three sets of 16) pressure inputs to be measured by sensors. The small size of the sensor module will allow mounting within many wind-tunnel models, thus eliminating long tube lengths and their corresponding slow pressure response.

Feasibility study of the welding of SiC

NASA Technical Reports Server (NTRS)

Moore, T. J.

1985-01-01

In a brief study of the feasibility of welding sintered alpha-SiC, solid-state welding and brazing were investigated. Joint quality was determined solely by microstructural examination. Hot-pressure welding was shown to be feasible at 1950 C. Diffusion welding and brazing were also successful under hot isostatic pressure at 1950 C when boride, carbide, and silicide interlayers were used. Furnace brazing was accomplished at 1750 C when a TiSi2 interlayer was introduced.

Young Investigator Program: Tribology of Nanostructured Silicon Carbide for MEMS and NEMS Applications in Extreme Environments

DTIC Science & Technology

2011-02-01

was calculated as the difference between the lowest point of the rigid indenter and the initial position of the sample’s free surface. The total...SiC A high pressure structural phase transformation (HPPT) was previously reported for silicon, gallium arsenide, and silicon nitride and indirect...molecular dynamics (MD) simulations with thermodynamic analysis to settle this debate whether silicon carbide (SiC) can undergo a high pressure phase

The baseline pressure of intracranial pressure (ICP) sensors can be altered by electrostatic discharges.

PubMed

Eide, Per K; Bakken, André

2011-08-22

The monitoring of intracranial pressure (ICP) has a crucial role in the surveillance of patients with brain injury. During long-term monitoring of ICP, we have seen spontaneous shifts in baseline pressure (ICP sensor zero point), which are of technical and not physiological origin. The aim of the present study was to explore whether or not baseline pressures of ICP sensors can be affected by electrostatics discharges (ESD's), when ESD's are delivered at clinically relevant magnitudes. We performed bench-testing of a set of commercial ICP sensors. In our experimental setup, the ICP sensor was placed in a container with 0.9% NaCl solution. A test person was charged 0.5-10 kV, and then delivered ESD's to the sensor by touching a metal rod that was located in the container. The continuous pressure signals were recorded continuously before/after the ESD's, and the pressure readings were stored digitally using a computerized system A total of 57 sensors were tested, including 25 Codman ICP sensors and 32 Raumedic sensors. When charging the test person in the range 0.5-10 kV, typically ESD's in the range 0.5-5 kV peak pulse were delivered to the ICP sensor. Alterations in baseline pressure ≥ 2 mmHg was seen in 24 of 25 (96%) Codman sensors and in 17 of 32 (53%) Raumedic sensors. Lasting changes in baseline pressure > 10 mmHg that in the clinical setting would affect patient management, were seen frequently for both sensor types. The changes in baseline pressure were either characterized by sudden shifts or gradual drifts in baseline pressure. The baseline pressures of commercial solid ICP sensors can be altered by ESD's at discharge magnitudes that are clinically relevant. Shifts in baseline pressure change the ICP levels visualised to the physician on the monitor screen, and thereby reveal wrong ICP values, which likely represent a severe risk to the patient.

The baseline pressure of intracranial pressure (ICP) sensors can be altered by electrostatic discharges

PubMed Central

2011-01-01

Background The monitoring of intracranial pressure (ICP) has a crucial role in the surveillance of patients with brain injury. During long-term monitoring of ICP, we have seen spontaneous shifts in baseline pressure (ICP sensor zero point), which are of technical and not physiological origin. The aim of the present study was to explore whether or not baseline pressures of ICP sensors can be affected by electrostatics discharges (ESD's), when ESD's are delivered at clinically relevant magnitudes. Methods We performed bench-testing of a set of commercial ICP sensors. In our experimental setup, the ICP sensor was placed in a container with 0.9% NaCl solution. A test person was charged 0.5 - 10 kV, and then delivered ESD's to the sensor by touching a metal rod that was located in the container. The continuous pressure signals were recorded continuously before/after the ESD's, and the pressure readings were stored digitally using a computerized system Results A total of 57 sensors were tested, including 25 Codman ICP sensors and 32 Raumedic sensors. When charging the test person in the range 0.5-10 kV, typically ESD's in the range 0.5 - 5 kV peak pulse were delivered to the ICP sensor. Alterations in baseline pressure ≥ 2 mmHg was seen in 24 of 25 (96%) Codman sensors and in 17 of 32 (53%) Raumedic sensors. Lasting changes in baseline pressure > 10 mmHg that in the clinical setting would affect patient management, were seen frequently for both sensor types. The changes in baseline pressure were either characterized by sudden shifts or gradual drifts in baseline pressure. Conclusions The baseline pressures of commercial solid ICP sensors can be altered by ESD's at discharge magnitudes that are clinically relevant. Shifts in baseline pressure change the ICP levels visualised to the physician on the monitor screen, and thereby reveal wrong ICP values, which likely represent a severe risk to the patient. PMID:21859487

Semiconductor nanomembrane-based sensors for high frequency pressure measurements

NASA Astrophysics Data System (ADS)

Ruan, Hang; Kang, Yuhong; Homer, Michelle; Claus, Richard O.; Mayo, David; Sibold, Ridge; Jones, Tyler; Ng, Wing

2017-04-01

This paper demonstrates improvements on semiconductor nanomembrane based high frequency pressure sensors that utilize silicon on insulator techniques in combination with nanocomposite materials. The low-modulus, conformal nanomembrane sensor skins with integrated interconnect elements and electronic devices could be applied to vehicles or wind tunnel models for full spectrum pressure analysis. Experimental data demonstrates that: 1) silicon nanomembrane may be used as single pressure sensor transducers and elements in sensor arrays, 2) the arrays may be instrumented to map pressure over the surfaces of test articles over a range of Reynolds numbers, temperature and other environmental conditions, 3) in the high frequency range, the sensor is comparable to the commercial high frequency sensor, and 4) in the low frequency range, the sensor is much better than the commercial sensor. This supports the claim that nanomembrane pressure sensors may be used for wide bandwidth flow analysis.

A simple sensing mechanism for wireless, passive pressure sensors.

PubMed

Drazan, John F; Wassick, Michael T; Dahle, Reena; Beardslee, Luke A; Cady, Nathaniel C; Ledet, Eric H

2016-08-01

We have developed a simple wireless pressure sensor that consists of only three electrically isolated components. Two conductive spirals are separated by a closed cell foam that deforms when exposed to changing pressures. This deformation changes the capacitance and thus the resonant frequency of the sensors. Prototype sensors were submerged and wirelessly interrogated while being exposed to physiologically relevant pressures from 10 to 130 mmHg. Sensors consistently exhibited a sensitivity of 4.35 kHz/mmHg which is sufficient for resolving physiologically relevant pressure changes in vivo. These simple sensors have the potential for in vivo pressure sensing.

Shock-induced bubble collapse in a vessel: Implications for vascular injury in shockwave lithotripsy

NASA Astrophysics Data System (ADS)

Coralic, Vedran; Colonius, Tim

2014-11-01

In shockwave lithotripsy, shocks are repeatedly focused on kidney stones so to break them. The process leads to cavitation in tissue, which leads to hemorrhage. We hypothesize that shock-induced collapse (SIC) of preexisting bubbles is a potential mechanism for vascular injury. We study it numerically with an idealized problem consisting of the three-dimensional SIC of an air bubble immersed in a cylindrical water column embedded in gelatin. The gelatin is a tissue simulant and can be treated as a fluid due to fast time scales and small spatial scales of collapse. We thus model the problem as a compressible multicomponent flow and simulate it with a shock- and interface-capturing numerical method. The method is high-order, conservative and non-oscillatory. Fifth-order WENO is used for spatial reconstruction and an HLLC Riemann solver upwinds the fluxes. A third-order TVD-RK scheme evolves the solution. We evaluate the potential for injury in SIC for a range of pressures, bubble and vessel sizes, and tissue properties. We assess the potential for injury by comparing the finite strains in tissue, obtained by particle tracking, to ultimate strains from experiments. We conclude that SIC may contribute to vascular rupture and discuss the smallest bubble sizes needed for injury. This research was supported by NIH Grant No. 2PO1DK043881 and utilized XSEDE, which is supported by NSF Grant No. OCI-1053575.

40 CFR 63.11583 - What are my monitoring requirements?

Code of Federal Regulations, 2012 CFR

2012-07-01

... applicable, and the following: (1) Locate the pressure sensor(s) in, or as close as possible to, a position... comparing the sensor output to redundant sensor output. (4) Conduct calibration checks any time the sensor exceeds the manufacturer's specified maximum operating pressure range or install a new pressure sensor. (5...

Reactions of silicon-based ceramics in mixed oxidation chlorination environments

NASA Technical Reports Server (NTRS)

Marra, John E.; Kreidler, Eric R.; Jacobson, Nathan S.; Fox, Dennis S.

1988-01-01

The reaction of silicon-based ceramics with 2 percent Cl2/Ar and 1 percent Cl2/1 percent to 20 percent O2/Ar at 950 C was studied with thermogravimetric analysis and high-pressure mass spectrometry. Pure Si, SiO2, several types of SiC, and Si3N4 were examined. The primary corrosion products were SiCl4(g) and SiO2(s) with smaller amounts of volatile silicon oxychlorides. The reactions appear to occur by chlorine penetration of the SiO2 layer, and gas-phase diffusion of the silicon chlorides away from the sample appears to be rate limiting. Pure SiO2 shows very little reaction with Cl2, SiC with excess Si is more reactive than the other materials with Cl2, whereas SiC with excess carbon is more reactive than the other materials with Cl2/O2. Si3N4 shows very little reaction with Cl2. These differences are explained on the basis of thermodynamic and microstructural factors.

Design, fabrication and metrological evaluation of wearable pressure sensors.

PubMed

Goy, C B; Menichetti, V; Yanicelli, L M; Lucero, J B; López, M A Gómez; Parodi, N F; Herrera, M C

2015-04-01

Pressure sensors are valuable transducers that are necessary in a huge number of medical application. However, the state of the art of compact and lightweight pressure sensors with the capability of measuring the contact pressure between two surfaces (contact pressure sensors) is very poor. In this work, several types of wearable contact pressure sensors are fabricated using different conductive textile materials and piezo-resistive films. The fabricated sensors differ in size, the textile conductor used and/or the number of layers of the sandwiched piezo-resistive film. The intention is to study, through the obtaining of their calibration curves, their metrological properties (repeatability, sensitivity and range) and determine which physical characteristics improve their ability for measuring contact pressures. It has been found that it is possible to obtain wearable contact pressure sensors through the proposed fabrication process with satisfactory repeatability, range and sensitivity; and that some of these properties can be improved by the physical characteristics of the sensors.

More than the sum of its parts? A merged satellite product from MODIS and AMSR2 sea ice concentration

NASA Astrophysics Data System (ADS)

Ludwig, V. S.; Istomina, L.; Spreen, G.

2017-12-01

Arctic sea ice concentration (SIC), the fraction of a grid cell that is covered by sea ice, is relevant for a multitude of branches: physics (heat/momentum exchange), chemistry (gas exchange), biology (photosynthesis), navigation (location of pack ice) and others. It has been observed from passive microwave (PMW) radiometers on satellites continuously since 1979, providing an almost 40-year time series. However, the resolution is limited to typically 25 km which is good enough for climate studies but too coarse to properly resolve the ice edge or to show leads. The highest resolution from PMW sensors today is 5 km of the AMSR2 89 GHz channels. Thermal infrared (TIR) and visible (VIS) measurements provide much higher resolutions between 1 km (TIR) and 30 m (VIS, regional daily coverage). The higher resolutions come at the cost of depending on cloud-free fields of view (TIR and VIS) and daylight (VIS). We present a merged product of ASI-AMSR2 SIC (PMW) and MODIS SIC (TIR) at a nominal resolution of 1 km. This product benefits from both the independence of PMW towards cloud coverage and the high resolution of TIR data. An independent validation data set has been produced from manually selected, cloud-free Landsat VIS data at 30 m resolution. This dataset is used to evaluate the performance of the merged SIC dataset. Our results show that the merged product resolves features which are smeared out by the PMW data while benefitting from the PMW data in cloudy cases and is thus indeed more than the sum of its parts.

Study of properties and development of sensors based on graphene films grown on SiC (0001) by thermal destruction method

NASA Astrophysics Data System (ADS)

Lebedev, A. A.; Davydov, V. Y.; Usachov, D. Y.; Lebedev, S. P.; Smirnov, A. N.; Levitskii, V. S.; Eliseyev, I. A.; Alekseev, P. A.; Dunaevskiy, M. S.; Rybkin, A. G.; Novikov, S. N.; Makarov, Yu N.

2018-01-01

The structural, chemical, and electronic properties of epitaxial graphene films grown by thermal decomposition of the Si-face of a semi-insulating 6H-SiC substrate in an argon environment are studied by Raman spectroscopy, X-ray photoelectron spectroscopy and angle-resolved photoemission. It was demonstrated the possibility of fabrication of the gas and biosensors that is based on grown graphene films. The gas sensors are sufficiently sensitive to NO2 at low concentrations. The biosensor operation was checked using an immunochemical system comprising fluorescein dye and monoclonal anti fluorescein antibodies. The sensor detects fluorescein concentration on a level of 1-10 ng/mL and bovine serum albumin- fluorescein conjugate on a level of 1-5 ng/mL. The proposed device has good prospects for use for early diagnostics of various diseases.

Capacitive Micro Pressure Sensor Integrated with a Ring Oscillator Circuit on Chip

PubMed Central

Dai, Ching-Liang; Lu, Po-Wei; Chang, Chienliu; Liu, Cheng-Yang

2009-01-01

The study investigates a capacitive micro pressure sensor integrated with a ring oscillator circuit on a chip. The integrated capacitive pressure sensor is fabricated using the commercial CMOS (complementary metal oxide semiconductor) process and a post-process. The ring oscillator is employed to convert the capacitance of the pressure sensor into the frequency output. The pressure sensor consists of 16 sensing cells in parallel. Each sensing cell contains a top electrode and a lower electrode, and the top electrode is a sandwich membrane. The pressure sensor needs a post-CMOS process to release the membranes after completion of the CMOS process. The post-process uses etchants to etch the sacrificial layers, and to release the membranes. The advantages of the post-process include easy execution and low cost. Experimental results reveal that the pressure sensor has a high sensitivity of 7 Hz/Pa in the pressure range of 0–300 kPa. PMID:22303167

Capacitive micro pressure sensor integrated with a ring oscillator circuit on chip.

PubMed

Dai, Ching-Liang; Lu, Po-Wei; Chang, Chienliu; Liu, Cheng-Yang

2009-01-01

The study investigates a capacitive micro pressure sensor integrated with a ring oscillator circuit on a chip. The integrated capacitive pressure sensor is fabricated using the commercial CMOS (complementary metal oxide semiconductor) process and a post-process. The ring oscillator is employed to convert the capacitance of the pressure sensor into the frequency output. The pressure sensor consists of 16 sensing cells in parallel. Each sensing cell contains a top electrode and a lower electrode, and the top electrode is a sandwich membrane. The pressure sensor needs a post-CMOS process to release the membranes after completion of the CMOS process. The post-process uses etchants to etch the sacrificial layers, and to release the membranes. The advantages of the post-process include easy execution and low cost. Experimental results reveal that the pressure sensor has a high sensitivity of 7 Hz/Pa in the pressure range of 0-300 kPa.

Design And Development The Ixo Mirrors By Innovative Slumping Glass Technologies

NASA Astrophysics Data System (ADS)

Pareschi, Giovanni; Ghigo, M.; Basso, S.; Citterio, O.; Canestrari, R.; Dell'Orto, E.; Conconi, P.; Parodi, G.; Proserpio, L.

2009-01-01

At INAF Brera Astronomical Observatory development activities are ongoing aiming at the design and development of the IXO mirrors based on slumping glass technique. Our approach is based on the use of thermal slumping of thin glass optics and it presents a number of innovative solution for the implementation. In particular our approach foresees the use of a ceramic mould made of SiC for thermal shaping of the glass segments, which occurs exerting a proper pressure during the moulding process. A thin layer (a few hundred Angstroms) of Pt or Ir is previously deposited on the glass segment, to prevent the adhesion on the SiC mould surface. Therefore this coating not only acts as a release agent of the process but, at the same time, it has also the role of reflecting layer of the X-ray mirror (in a sense like it was the role of gold in the Ni electroforming replication method used for the XMM shells). SiC is chosen for its very good T/M characteristics and, in particular, a very high thermal conductivity and very low CTE. SiC mould will be produced via injection moulding process, followed by a the application of a cladding layer (a few tens microns) application of CVD SiC for allowing a superpolishing of the surface until a roughness of a few Angstrom rms is achieved. Once the mirror segments are produced, they are integrated in petals by means of air-bearings supports, that allows us to maintain the proper shape of the segments without deformations. The segments are stacked into the petals by the use of connecting ribs, glued to the front surface of each mirror and to the rear of the next one.

Structural Engineering for High Sensitivity, Ultrathin Pressure Sensors Based on Wrinkled Graphene and Anodic Aluminum Oxide Membrane.

PubMed

Chen, Wenjun; Gui, Xuchun; Liang, Binghao; Yang, Rongliang; Zheng, Yongjia; Zhao, Chengchun; Li, Xinming; Zhu, Hai; Tang, Zikang

2017-07-19

Nature-motivated pressure sensors have been greatly important components integrated into flexible electronics and applied in artificial intelligence. Here, we report a high sensitivity, ultrathin, and transparent pressure sensor based on wrinkled graphene prepared by a facile liquid-phase shrink method. Two pieces of wrinkled graphene are face to face assembled into a pressure sensor, in which a porous anodic aluminum oxide (AAO) membrane with the thickness of only 200 nm was used to insulate the two layers of graphene. The pressure sensor exhibits ultrahigh operating sensitivity (6.92 kPa -1 ), resulting from the insulation in its inactive state and conduction under compression. Formation of current pathways is attributed to the contact of graphene wrinkles through the pores of AAO membrane. In addition, the pressure sensor is also an on/off and energy saving device, due to the complete isolation between the two graphene layers when the sensor is not subjected to any pressure. We believe that our high-performance pressure sensor is an ideal candidate for integration in flexible electronics, but also paves the way for other 2D materials to be involved in the fabrication of pressure sensors.

Respiration and body movement analysis during sleep in bed using hetero-core fiber optic pressure sensors without constraint to human activity.

PubMed

Nishyama, Michiko; Miyamoto, Mitsuo; Watanabe, Kazuhiro

2011-01-01

We describe respiration monitoring in sleep using hetero-core fiber optic pressure sensors. The proposed hetero-core fiber optic sensor is highly sensitive to macrobending as a result of the core diameter difference due to stable single-mode transmission. Pressure sensors based on hetero-core fiber optics were fabricated to have a high sensitivity to small pressure changes resulting from minute body motions, such as respiration, during sleep and large pressure changes, such as those caused by a rollover. The sensors are installed in a conventional bed. The pressure characteristic performance of all the fabricated hetero-core fiber optic pressure sensors is found to show a monotonic response with weight changes. A respiration monitoring test in seven subjects efficiently demonstrates the effective use of eight hetero-core pressure sensors installed in a bed. Additionally, even in the case of different body postures, such as lying on one's side, a slight body movement due to respiration is detected by the hetero-core pressure sensors.

Respiration and body movement analysis during sleep in bed using hetero-core fiber optic pressure sensors without constraint to human activity

NASA Astrophysics Data System (ADS)

Nishyama, Michiko; Miyamoto, Mitsuo; Watanabe, Kazuhiro

2011-01-01

We describe respiration monitoring in sleep using hetero-core fiber optic pressure sensors. The proposed hetero-core fiber optic sensor is highly sensitive to macrobending as a result of the core diameter difference due to stable single-mode transmission. Pressure sensors based on hetero-core fiber optics were fabricated to have a high sensitivity to small pressure changes resulting from minute body motions, such as respiration, during sleep and large pressure changes, such as those caused by a rollover. The sensors are installed in a conventional bed. The pressure characteristic performance of all the fabricated hetero-core fiber optic pressure sensors is found to show a monotonic response with weight changes. A respiration monitoring test in seven subjects efficiently demonstrates the effective use of eight hetero-core pressure sensors installed in a bed. Additionally, even in the case of different body postures, such as lying on one's side, a slight body movement due to respiration is detected by the hetero-core pressure sensors.

Capacitive Pressure Sensor with High Sensitivity and Fast Response to Dynamic Interaction Based on Graphene and Porous Nylon Networks.

PubMed

He, Zhongfu; Chen, Wenjun; Liang, Binghao; Liu, Changyong; Yang, Leilei; Lu, Dongwei; Mo, Zichao; Zhu, Hai; Tang, Zikang; Gui, Xuchun

2018-04-18

Flexible pressure sensors are of great importance to be applied in artificial intelligence and wearable electronics. However, assembling a simple structure, high-performance capacitive pressure sensor, especially for monitoring the flow of liquids, is still a big challenge. Here, on the basis of a sandwich-like structure, we propose a facile capacitive pressure sensor optimized by a flexible, low-cost nylon netting, showing many merits including a high response sensitivity (0.33 kPa -1 ) in a low-pressure regime (<1 kPa), an ultralow detection limit as 3.3 Pa, excellent working stability after more than 1000 cycles, and synchronous monitoring for human pulses and clicks. More important, this sensor exhibits an ultrafast response speed (<20 ms), which enables its detection for the fast variations of a small applied pressure from the morphological changing processes of a droplet falling onto the sensor. Furthermore, a capacitive pressure sensor array is fabricated for demonstrating the ability to spatial pressure distribution. Our developed pressure sensors show great prospects in practical applications such as health monitoring, flexible tactile devices, and motion detection.

Conductive fiber-based ultrasensitive textile pressure sensor for wearable electronics.

PubMed

Lee, Jaehong; Kwon, Hyukho; Seo, Jungmok; Shin, Sera; Koo, Ja Hoon; Pang, Changhyun; Son, Seungbae; Kim, Jae Hyung; Jang, Yong Hoon; Kim, Dae Eun; Lee, Taeyoon

2015-04-17

A flexible and sensitive textile-based pressure sensor is developed using highly conductive fibers coated with dielectric rubber materials. The pressure sensor exhibits superior sensitivity, very fast response time, and high stability, compared with previous textile-based pressure sensors. By using a weaving method, the pressure sensor can be applied to make smart gloves and clothes that can control machines wirelessly as human-machine interfaces. © 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

A minimally invasive in-fiber Bragg grating sensor for intervertebral disc pressure measurements

NASA Astrophysics Data System (ADS)

Dennison, Christopher R.; Wild, Peter M.; Wilson, David R.; Cripton, Peter A.

2008-08-01

We present an in-fiber Bragg grating (FBG) based intervertebral disc (IVD) pressure sensor that has pressure sensitivity seven times greater than that of a bare fiber, and a major diameter and sensing area of only 400 µm and 0.03 mm2, respectively. This is the only optical, the smallest and the most mechanically compliant disc pressure sensor reported in the literature. This is also an improvement over other FBG pressure sensors that achieve increased sensitivity through mechanical amplification schemes, usually resulting in major diameters and sensing lengths of many millimeters. Sensor sensitivity is predicted using numerical models, and the predicted sensitivity is verified through experimental calibrations. The sensor is validated by conducting IVD pressure measurements in porcine discs and comparing the FBG measurements to those obtained using the current standard sensor for IVD pressure. The predicted sensitivity of the FBG sensor matched with that measured experimentally. IVD pressure measurements showed excellent repeatability and agreement with those obtained from the standard sensor. Unlike the current larger sensors, the FBG sensor could be used in discs with small disc height (i.e. cervical or degenerated discs). Therefore, there is potential to conduct new measurements that could lead to new understanding of the biomechanics.

[Implantable sensors for outpatient assessment of ventricular filling pressure in advanced heart failure : Which telemonitoring design is optimal?

PubMed

Herrmann, E; Fichtlscherer, S; Hohnloser, S H; Zeiher, A M; Aßmus, B

2016-12-01

Patients with advanced heart failure suffer from frequent hospitalizations. Non-invasive hemodynamic telemonitoring for assessment of ventricular filling pressure has been shown to reduce hospitalizations. We report on the right ventricular (RVP), the pulmonary artery (PAP) and the left atrial pressure (LAP) sensor for non-invasive assessment of the ventricular filling pressure. A literature search concerning the available implantable pressure sensors for noninvasive haemodynamic telemonitoring in patients with advanced heart failure was performed. Until now, only implantation of the PAP-sensor was able to reduce hospitalizations for cardiac decompensation and to improve quality of life. The right ventricular pressure sensor missed the primary endpoint of a significant reduction of hospitalizations, clinical data using the left atrial pressure sensor are still pending. The implantation of a pressure sensor for assessment of pulmonary artery filling pressure is suitable for reducing hospitalizations for heart failure and for improving quality of life in patients with advanced heart failure.

FBG based high sensitive pressure sensor and its low-cost interrogation system with enhanced resolution

NASA Astrophysics Data System (ADS)

Pachava, Vengal Rao; Kamineni, Srimannarayana; Madhuvarasu, Sai Shankar; Putha, Kishore; Mamidi, Venkata Reddy

2015-12-01

A fiber Bragg grating (FBG) pressure sensor with high sensitivity and resolution has been designed and demonstrated. The sensor is configured by firmly fixing the FBG with a metal bellows structure. The sensor works by means of measuring the Bragg wavelength shift of the FBG with respect to pressure change. From the experimental results, the pressure sensitivity of the sensor is found to be 90.6 pm/psi, which is approximately 4000 times as that of a bare fiber Bragg grating. A very good linearity of 99.86% is observed between the Bragg wavelength of the FBG and applied pressure. The designed sensor shows good repeatability with a negligible hysteresis error of ± 0.29 psi. A low-cost interrogation system that includes a long period grating (LPG) and a photodiode (PD) accompanied with simple electronic circuitry is demonstrated for the FBG sensor, which enables the sensor to attain high resolution of up to 0.025 psi. Thermal-strain cross sensitivity of the FBG pressure sensor is compensated using a reference FBG temperature sensor. The designed sensor can be used for liquid level, specific gravity, and static/dynamic low pressure measurement applications.

Stretchable Array of Highly Sensitive Pressure Sensors Consisting of Polyaniline Nanofibers and Au-Coated Polydimethylsiloxane Micropillars.

PubMed

Park, Heun; Jeong, Yu Ra; Yun, Junyeong; Hong, Soo Yeong; Jin, Sangwoo; Lee, Seung-Jung; Zi, Goangseup; Ha, Jeong Sook

2015-10-27

We report on the facile fabrication of a stretchable array of highly sensitive pressure sensors. The proposed pressure sensor consists of the top layer of Au-deposited polydimethylsiloxane (PDMS) micropillars and the bottom layer of conductive polyaniline nanofibers on a polyethylene terephthalate substrate. The sensors are operated by the changes in contact resistance between Au-coated micropillars and polyaniline according to the varying pressure. The fabricated pressure sensor exhibits a sensitivity of 2.0 kPa(-1) in the pressure range below 0.22 kPa, a low detection limit of 15 Pa, a fast response time of 50 ms, and high stability over 10000 cycles of pressure loading/unloading with a low operating voltage of 1.0 V. The sensor is also capable of noninvasively detecting human-pulse waveforms from carotid and radial artery. A 5 × 5 array of the pressure sensors on the deformable substrate, which consists of PDMS islands for sensors and the mixed thin film of PDMS and Ecoflex with embedded liquid metal interconnections, shows stable sensing of pressure under biaxial stretching by 15%. The strain distribution obtained by the finite element method confirms that the maximum strain applied to the pressure sensor in the strain-suppressed region is less than 0.04% under a 15% biaxial strain of the unit module. This work demonstrates the potential application of our proposed stretchable pressure sensor array for wearable and artificial electronic skin devices.

Flexible Sensors for Pressure Therapy: Effect of Substrate Curvature and Stiffness on Sensor Performance.

PubMed

Khodasevych, Iryna; Parmar, Suresh; Troynikov, Olga

2017-10-20

Flexible pressure sensors are increasingly being used in medical and non-medical applications, and particularly in innovative health monitoring. Their efficacy in medical applications such as compression therapy depends on the accuracy and repeatability of their output, which in turn depend on factors such as sensor type, shape, pressure range, and conformability of the sensor to the body surface. Numerous researchers have examined the effects of sensor type and shape, but little information is available on the effect of human body parameters such as support surfaces' curvature and the stiffness of soft tissues on pressure sensing performance. We investigated the effects of body parameters on the performance of pressure sensors using a custom-made human-leg-like test setup. Pressure sensing parameters such as accuracy, drift and repeatability were determined in both static (eight hours continuous pressure) and dynamic (10 cycles of pressure application of 30 s duration) testing conditions. The testing was performed with a focus on compression therapy application for venous leg ulcer treatments, and was conducted in a low-pressure range of 20-70 mmHg. Commercially available sensors manufactured by Peratech and Sensitronics were used under various loading conditions to determine the influence of stiffness and curvature. Flat rigid, flat soft silicone and three cylindrical silicone surfaces of radii of curvature of 3.5 cm, 5.5 cm and 6.5 cm were used as substrates under the sensors. The Peratech sensor averaged 94% accuracy for both static and dynamic measurements on all substrates; the Sensitronics sensor averaged 88% accuracy. The Peratech sensor displayed moderate variations and the Sensitronics sensor large variations in output pressure readings depending on the underlying test surface, both of which were reduced markedly by individual pressure calibration for surface type. Sensor choice and need for calibration to surface type are important considerations for their application in healthcare monitoring.

Flexible Sensors for Pressure Therapy: Effect of Substrate Curvature and Stiffness on Sensor Performance

PubMed Central

Khodasevych, Iryna; Parmar, Suresh

2017-01-01

Flexible pressure sensors are increasingly being used in medical and non-medical applications, and particularly in innovative health monitoring. Their efficacy in medical applications such as compression therapy depends on the accuracy and repeatability of their output, which in turn depend on factors such as sensor type, shape, pressure range, and conformability of the sensor to the body surface. Numerous researchers have examined the effects of sensor type and shape, but little information is available on the effect of human body parameters such as support surfaces’ curvature and the stiffness of soft tissues on pressure sensing performance. We investigated the effects of body parameters on the performance of pressure sensors using a custom-made human-leg-like test setup. Pressure sensing parameters such as accuracy, drift and repeatability were determined in both static (eight hours continuous pressure) and dynamic (10 cycles of pressure application of 30 s duration) testing conditions. The testing was performed with a focus on compression therapy application for venous leg ulcer treatments, and was conducted in a low-pressure range of 20–70 mmHg. Commercially available sensors manufactured by Peratech and Sensitronics were used under various loading conditions to determine the influence of stiffness and curvature. Flat rigid, flat soft silicone and three cylindrical silicone surfaces of radii of curvature of 3.5 cm, 5.5 cm and 6.5 cm were used as substrates under the sensors. The Peratech sensor averaged 94% accuracy for both static and dynamic measurements on all substrates; the Sensitronics sensor averaged 88% accuracy. The Peratech sensor displayed moderate variations and the Sensitronics sensor large variations in output pressure readings depending on the underlying test surface, both of which were reduced markedly by individual pressure calibration for surface type. Sensor choice and need for calibration to surface type are important considerations for their application in healthcare monitoring. PMID:29053605

Fabrication of mullite-bonded porous SiC ceramics from multilayer-coated SiC particles through sol-gel and in-situ polymerization techniques

NASA Astrophysics Data System (ADS)

Ebrahimpour, Omid

In this work, mullite-bonded porous silicon carbide (SiC) ceramics were prepared via a reaction bonding technique with the assistance of a sol-gel technique or in-situ polymerization as well as a combination of these techniques. In a typical procedure, SiC particles were first coated by alumina using calcined powder and alumina sol via a sol-gel technique followed by drying and passing through a screen. Subsequently, they were coated with the desired amount of polyethylene via an in-situ polymerization technique in a slurry phase reactor using a Ziegler-Natta catalyst. Afterward, the coated powders were dried again and passed through a screen before being pressed into a rectangular mold to make a green body. During the heating process, the polyethylene was burnt out to form pores at a temperature of about 500°C. Increasing the temperature above 800°C led to the partial oxidation of SiC particles to silica. At higher temperatures (above 1400°C) derived silica reacted with alumina to form mullite, which bonds SiC particles together. The porous SiC specimens were characterized with various techniques. The first part of the project was devoted to investigating the oxidation of SiC particles using a Thermogravimetric analysis (TGA) apparatus. The effects of particle size (micro and nano) and oxidation temperature (910°C--1010°C) as well as the initial mass of SiC particles in TGA on the oxidation behaviour of SiC powders were evaluated. To illustrate the oxidation rate of SiC in the packed bed state, a new kinetic model, which takes into account all of the diffusion steps (bulk, inter and intra particle diffusion) and surface oxidation rate, was proposed. Furthermore, the oxidation of SiC particles was analyzed by the X-ray Diffraction (XRD) technique. The effect of different alumina sources (calcined Al2O 3, alumina sol or a combination of the two) on the mechanical, physical, and crystalline structure of mullite-bonded porous SiC ceramics was studied in the second part of the project. Alumina sol was synthesized by the hydrolysis of Aluminum isopropoxide using the Yoldas method. Alumina sol was homogenous and had a needle-like shape with a thickness of 2--3 nm. Crystalline changes during the heating process of alumina sol were studied using XRD. In addition, Fourier transform infrared (FTIR) spectroscopy was performed to identify the functional groups on the alumina sol surface as a function of temperature. In the third part of the project, the feasibility of the in-situ polymerization technique was investigated to fabricate porous SiC ceramics. In this part, the mixture of SiC and calcined alumina powders were coated by polyethylene via in-situ polymerizing referred to as the polymerization compounding process in a slurry phase. The polymerization was conducted under very moderate operational conditions using the Ziegler-Natta catalyst system. Differential scanning calorimetry (DSC) and TGA analysis and morphological studies (SEM and TEM) revealed the presence of a high density of polyethylene on the surface of SiC and alumina powders. The amount of polymer was controlled by the polymerization reaction time. Most parts of particles were coated by a thin layer of polyethylene and polymer. The porous SiC ceramics, which were fabricated by these treated particles showed higher mechanical and physical properties compared to the samples made without any treatment. The relative intensity of mullite was higher compared to the samples prepared by the traditional process. The effects of the sintering temperature, forming pressure and polymer content were also studied on the physical and mechanical properties of the final product. In the last phase of this research work, the focus of the investigation was to take advantage of both the sol-gel processing and in-situ polymerization method to develop a new process to manufacture mullite-bonded porous SiC ceramic with enhanced mechanical and physical properties. Therefore, first the SiC particles and alumina nano powders were mixed in alumina sol to adjust the alumina weight to 35 wt%. Then, the desired amount of catalyst, which depends on the total surface area of the particles, was grafted onto the surface of the powders under an inert atmosphere. Consequently, the polymerization started from the surface of the substrate. The treated powders were characterized by SEM, XPS and TGA. In addition, the amount of pore-former was determined by TGA analysis. Porous SiC ceramics, which were fabricated by the novel process, consist of mullite, SiC, cristobalite and a small amount of alumina and TiO 2 as a result of reaction of TiCl4 with air. Furthermore, the effect of the sintering temperatures (1500°C, 1550°C and 1600°C) on the crystalline structure of the porous samples was investigated. Furthermore, it was proposed that converting TiCl4 to TiO2 acted as the sintering additive to form mullite at a lower sintering temperature. (Abstract shortened by UMI.).

Multiscale Hierarchical Design of a Flexible Piezoresistive Pressure Sensor with High Sensitivity and Wide Linearity Range.

PubMed

Shi, Jidong; Wang, Liu; Dai, Zhaohe; Zhao, Lingyu; Du, Mingde; Li, Hongbian; Fang, Ying

2018-05-30

Flexible piezoresistive pressure sensors have been attracting wide attention for applications in health monitoring and human-machine interfaces because of their simple device structure and easy-readout signals. For practical applications, flexible pressure sensors with both high sensitivity and wide linearity range are highly desirable. Herein, a simple and low-cost method for the fabrication of a flexible piezoresistive pressure sensor with a hierarchical structure over large areas is presented. The piezoresistive pressure sensor consists of arrays of microscale papillae with nanoscale roughness produced by replicating the lotus leaf's surface and spray-coating of graphene ink. Finite element analysis (FEA) shows that the hierarchical structure governs the deformation behavior and pressure distribution at the contact interface, leading to a quick and steady increase in contact area with loads. As a result, the piezoresistive pressure sensor demonstrates a high sensitivity of 1.2 kPa -1 and a wide linearity range from 0 to 25 kPa. The flexible pressure sensor is applied for sensitive monitoring of small vibrations, including wrist pulse and acoustic waves. Moreover, a piezoresistive pressure sensor array is fabricated for mapping the spatial distribution of pressure. These results highlight the potential applications of the flexible piezoresistive pressure sensor for health monitoring and electronic skin. © 2018 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

A Wireless Pressure Sensor Integrated with a Biodegradable Polymer Stent for Biomedical Applications

PubMed Central

Park, Jongsung; Kim, Ji-Kwan; Patil, Swati J.; Park, Jun-Kyu; Park, SuA; Lee, Dong-Weon

2016-01-01

This paper describes the fabrication and characterization of a wireless pressure sensor for smart stent applications. The micromachined pressure sensor has an area of 3.13 × 3.16 mm2 and is fabricated with a photosensitive SU-8 polymer. The wireless pressure sensor comprises a resonant circuit and can be used without the use of an internal power source. The capacitance variations caused by changes in the intravascular pressure shift the resonance frequency of the sensor. This change can be detected using an external antenna, thus enabling the measurement of the pressure changes inside a tube with a simple external circuit. The wireless pressure sensor is capable of measuring pressure from 0 mmHg to 230 mmHg, with a sensitivity of 0.043 MHz/mmHg. The biocompatibility of the pressure sensor was evaluated using cardiac cells isolated from neonatal rat ventricular myocytes. After inserting a metal stent integrated with the pressure sensor into a cardiovascular vessel of an animal, medical systems such as X-ray were employed to consistently monitor the condition of the blood vessel. No abnormality was found in the animal blood vessel for approximately one month. Furthermore, a biodegradable polymer (polycaprolactone) stent was fabricated with a 3D printer. The polymer stent exhibits better sensitivity degradation of the pressure sensor compared to the metal stent. PMID:27271619

A Wireless Pressure Sensor Integrated with a Biodegradable Polymer Stent for Biomedical Applications.

PubMed

Park, Jongsung; Kim, Ji-Kwan; Patil, Swati J; Park, Jun-Kyu; Park, SuA; Lee, Dong-Weon

2016-06-02

This paper describes the fabrication and characterization of a wireless pressure sensor for smart stent applications. The micromachined pressure sensor has an area of 3.13 × 3.16 mm² and is fabricated with a photosensitive SU-8 polymer. The wireless pressure sensor comprises a resonant circuit and can be used without the use of an internal power source. The capacitance variations caused by changes in the intravascular pressure shift the resonance frequency of the sensor. This change can be detected using an external antenna, thus enabling the measurement of the pressure changes inside a tube with a simple external circuit. The wireless pressure sensor is capable of measuring pressure from 0 mmHg to 230 mmHg, with a sensitivity of 0.043 MHz/mmHg. The biocompatibility of the pressure sensor was evaluated using cardiac cells isolated from neonatal rat ventricular myocytes. After inserting a metal stent integrated with the pressure sensor into a cardiovascular vessel of an animal, medical systems such as X-ray were employed to consistently monitor the condition of the blood vessel. No abnormality was found in the animal blood vessel for approximately one month. Furthermore, a biodegradable polymer (polycaprolactone) stent was fabricated with a 3D printer. The polymer stent exhibits better sensitivity degradation of the pressure sensor compared to the metal stent.

Fixture For Mounting A Pressure Sensor

NASA Technical Reports Server (NTRS)

Cagle, Christopher M.

1995-01-01

Fixture for mounting pressure sensor in aerodynamic model simplifies task of removal and replacement of sensor in event sensor becomes damaged. Makes it unnecessary to dismantle model. Also minimizes any change in aerodynamic characteristics of model in event of replacement. Removable pressure sensor installed in fixture in wall of model. Wires from sensor pass through channel under surface.

Micro packaged MEMS pressure sensor for intracranial pressure measurement

NASA Astrophysics Data System (ADS)

Xiong, Liu; Yan, Yao; Jiahao, Ma; Yanhang, Zhang; Qian, Wang; Zhaohua, Zhang; Tianling, Ren

2015-06-01

This paper presents a micro packaged MEMS pressure sensor for intracranial pressure measurement which belongs to BioMEMS. It can be used in lumbar puncture surgery to measure intracranial pressure. Miniaturization is key for lumbar puncture surgery because the sensor must be small enough to allow it be placed in the reagent chamber of the lumbar puncture needle. The size of the sensor is decided by the size of the sensor chip and package. Our sensor chip is based on silicon piezoresistive effect and the size is 400 × 400 μm2. It is much smaller than the reported polymer intracranial pressure sensors such as liquid crystal polymer sensors. In terms of package, the traditional dual in-line package obviously could not match the size need, the minimal size of recently reported MEMS-based intracranial pressure sensors after packaging is 10 × 10 mm2. In this work, we are the first to introduce a quad flat no-lead package as the package form of piezoresistive intracranial pressure sensors, the whole size of the sensor is minimized to only 3 × 3 mm2. Considering the liquid measurement environment, the sensor is gummed and waterproof performance is tested; the sensitivity of the sensor is 0.9 × 10-2 mV/kPa. Project supported by the National Natural Science Foundation of China (Nos. 61025021, 61434001), and the ‘Thousands Talents’ Program for Pioneer Researchers and Its Innovation Team, China.

A Wireless Embedded Sensor based on Magnetic Higher-order Harmonic Fields: Application to Liquid Pressure Monitoring

PubMed Central

Tan, Ee Lim; Pereles, Brandon D.

2010-01-01

A wireless sensor based on the magnetoelastic, magnetically soft ferromagnetic alloy was constructed for remote measurement of pressure in flowing fluids. The pressure sensor was a rectangular strip of ferromagnetic alloy Fe40Ni38Mo4B18 adhered on a solid polycarbonate substrate and protected by a thin polycarbonate film. Upon excitation of a time-varying magnetic field through an excitation coil, the magnetically soft sensor magnetized and produced higher-order harmonic fields, which were detected through a detection coil. Under varying pressures, the sensor's magnetoelastic property caused a change in its magnetization, altering the amplitudes of the higher-order harmonic fields. A theoretical model was developed to describe the effect of pressure on the sensor's higher order harmonic fields. Experimental observations showed the 2nd order harmonic field generated by the pressure sensor was correlated to the surrounding fluid pressure, consistent with the theoretical results. Furthermore, it was demonstrated that the sensor exhibited good repeatability and stability with minimal drift. Sensors with smaller dimensions were shown to have greater sensitivity but lower pressure range as compared to their larger counterparts. Since the sensor signal was also dependent on the location of the sensor with respect to the excitation/detection coil, a calibration algorithm was developed to eliminate signal variations due to the changing sensor location. Because of its wireless and passive nature, this sensor is useful for continuous and long-term monitoring of pressure at inaccessible areas. For example, sensors with these capabilities are suitable to be used in biomedical applications where permanent implantation and long-term monitoring are needed. PMID:20514363

Integrated arrays of air-dielectric graphene transistors as transparent active-matrix pressure sensors for wide pressure ranges.

PubMed

Shin, Sung-Ho; Ji, Sangyoon; Choi, Seiho; Pyo, Kyoung-Hee; Wan An, Byeong; Park, Jihun; Kim, Joohee; Kim, Ju-Young; Lee, Ki-Suk; Kwon, Soon-Yong; Heo, Jaeyeong; Park, Byong-Guk; Park, Jang-Ung

2017-03-31

Integrated electronic circuitries with pressure sensors have been extensively researched as a key component for emerging electronics applications such as electronic skins and health-monitoring devices. Although existing pressure sensors display high sensitivities, they can only be used for specific purposes due to the narrow range of detectable pressure (under tens of kPa) and the difficulty of forming highly integrated arrays. However, it is essential to develop tactile pressure sensors with a wide pressure range in order to use them for diverse application areas including medical diagnosis, robotics or automotive electronics. Here we report an unconventional approach for fabricating fully integrated active-matrix arrays of pressure-sensitive graphene transistors with air-dielectric layers simply formed by folding two opposing panels. Furthermore, this realizes a wide tactile pressure sensing range from 250 Pa to ∼3 MPa. Additionally, fabrication of pressure sensor arrays and transparent pressure sensors are demonstrated, suggesting their substantial promise as next-generation electronics.

Integrated arrays of air-dielectric graphene transistors as transparent active-matrix pressure sensors for wide pressure ranges

NASA Astrophysics Data System (ADS)

Shin, Sung-Ho; Ji, Sangyoon; Choi, Seiho; Pyo, Kyoung-Hee; Wan An, Byeong; Park, Jihun; Kim, Joohee; Kim, Ju-Young; Lee, Ki-Suk; Kwon, Soon-Yong; Heo, Jaeyeong; Park, Byong-Guk; Park, Jang-Ung

2017-03-01

Integrated electronic circuitries with pressure sensors have been extensively researched as a key component for emerging electronics applications such as electronic skins and health-monitoring devices. Although existing pressure sensors display high sensitivities, they can only be used for specific purposes due to the narrow range of detectable pressure (under tens of kPa) and the difficulty of forming highly integrated arrays. However, it is essential to develop tactile pressure sensors with a wide pressure range in order to use them for diverse application areas including medical diagnosis, robotics or automotive electronics. Here we report an unconventional approach for fabricating fully integrated active-matrix arrays of pressure-sensitive graphene transistors with air-dielectric layers simply formed by folding two opposing panels. Furthermore, this realizes a wide tactile pressure sensing range from 250 Pa to ~3 MPa. Additionally, fabrication of pressure sensor arrays and transparent pressure sensors are demonstrated, suggesting their substantial promise as next-generation electronics.

Integrated arrays of air-dielectric graphene transistors as transparent active-matrix pressure sensors for wide pressure ranges

PubMed Central

Shin, Sung-Ho; Ji, Sangyoon; Choi, Seiho; Pyo, Kyoung-Hee; Wan An, Byeong; Park, Jihun; Kim, Joohee; Kim, Ju-Young; Lee, Ki-Suk; Kwon, Soon-Yong; Heo, Jaeyeong; Park, Byong-Guk; Park, Jang-Ung

2017-01-01

Integrated electronic circuitries with pressure sensors have been extensively researched as a key component for emerging electronics applications such as electronic skins and health-monitoring devices. Although existing pressure sensors display high sensitivities, they can only be used for specific purposes due to the narrow range of detectable pressure (under tens of kPa) and the difficulty of forming highly integrated arrays. However, it is essential to develop tactile pressure sensors with a wide pressure range in order to use them for diverse application areas including medical diagnosis, robotics or automotive electronics. Here we report an unconventional approach for fabricating fully integrated active-matrix arrays of pressure-sensitive graphene transistors with air-dielectric layers simply formed by folding two opposing panels. Furthermore, this realizes a wide tactile pressure sensing range from 250 Pa to ∼3 MPa. Additionally, fabrication of pressure sensor arrays and transparent pressure sensors are demonstrated, suggesting their substantial promise as next-generation electronics. PMID:28361867

Integration of piezo-capacitive and piezo-electric nanoweb based pressure sensors for imaging of static and dynamic pressure distribution.

PubMed

Jeong, Y J; Oh, T I; Woo, E J; Kim, K J

2017-07-01

Recently, highly flexible and soft pressure distribution imaging sensor is in great demand for tactile sensing, gait analysis, ubiquitous life-care based on activity recognition, and therapeutics. In this study, we integrate the piezo-capacitive and piezo-electric nanowebs with the conductive fabric sheets for detecting static and dynamic pressure distributions on a large sensing area. Electrical impedance tomography (EIT) and electric source imaging are applied for reconstructing pressure distribution images from measured current-voltage data on the boundary of the hybrid fabric sensor. We evaluated the piezo-capacitive nanoweb sensor, piezo-electric nanoweb sensor, and hybrid fabric sensor. The results show the feasibility of static and dynamic pressure distribution imaging from the boundary measurements of the fabric sensors.

Novel designs for application specific MEMS pressure sensors.

PubMed

Fragiacomo, Giulio; Reck, Kasper; Lorenzen, Lasse; Thomsen, Erik V

2010-01-01

In the framework of developing innovative microfabricated pressure sensors, we present here three designs based on different readout principles, each one tailored for a specific application. A touch mode capacitive pressure sensor with high sensitivity (14 pF/bar), low temperature dependence and high capacitive output signal (more than 100 pF) is depicted. An optical pressure sensor intrinsically immune to electromagnetic interference, with large pressure range (0-350 bar) and a sensitivity of 1 pm/bar is presented. Finally, a resonating wireless pressure sensor power source free with a sensitivity of 650 KHz/mmHg is described. These sensors will be related with their applications in harsh environment, distributed systems and medical environment, respectively. For many aspects, commercially available sensors, which in vast majority are piezoresistive, are not suited for the applications proposed.

Experimental and Numerical Investigation of Pressure Drop in Silicon Carbide Fuel Rod for Application in Pressurized Water Reactors

NASA Astrophysics Data System (ADS)

Abir, Ahmed Musafi

Spacer grids are used in Pressurized Water Reactors (PWRs) fuel assemblies which enhances heat transfer from fuel rods. However, there remain regions of low turbulence in between the spacer grids. To enhance turbulence in these regions surface roughness is applied on the fuel rod walls. Meyer [1] used empirical correlations to predict heat transfer and friction factor for artificially roughened fuel rod bundles at High Performance Light Water Reactors (LWRs). Their applicability was tested by Carrilho at University of South Carolina's (USC) Single Heated Element Loop Tester (SHELT). He attained a heat transfer and friction factor enhancement of 50% and 45% respectively, using Inconel nuclear fuel rods with square transverse ribbed surface. Following him Najeeb conducted a similar study due to three dimensional diamond shaped blocks in turbulent flow. He recorded a maximum heat transfer enhancement of 83%. At present, several types of materials are being used for fuel rod cladding including Zircaloy, Uranium oxide, etc. But researchers are actively searching for new material that can be a more practical alternative. Silicon Carbide (SiC) has been identified as a material of interest for application as fuel rod cladding [2]. The current study deals with the experimental investigation to find out the friction factor increase of a SiC fuel rod with 3D surface roughness. The SiC rod was tested at USC's SHELT loop. The experiment was conducted in turbulent flowing Deionized (DI) water at steady state conditions. Measurements of Flow rate and pressure drop were made. The experimental results were also validated by Computational Fluid Dynamics (CFD) analysis in ANSYS Fluent. To simplify the CFD analysis and to save computational resources the 3D roughness was approximated as a 2D one. The friction factor results of the CFD investigation was found to lie within +/-8% of the experimental results. A CFD model was also run with the energy equation turned on, and a heat generation of 8 kW applied to the rod. A maximum heat transfer enhancement of 18.4% was achieved at the highest flow rate investigated (i.e. Re=109204).

Flexible Piezoelectric-Induced Pressure Sensors for Static Measurements Based on Nanowires/Graphene Heterostructures.

PubMed

Chen, Zefeng; Wang, Zhao; Li, Xinming; Lin, Yuxuan; Luo, Ningqi; Long, Mingzhu; Zhao, Ni; Xu, Jian-Bin

2017-05-23

The piezoelectric effect is widely applied in pressure sensors for the detection of dynamic signals. However, these piezoelectric-induced pressure sensors have challenges in measuring static signals that are based on the transient flow of electrons in an external load as driven by the piezopotential arisen from dynamic stress. Here, we present a pressure sensor with nanowires/graphene heterostructures for static measurements based on the synergistic mechanisms between strain-induced polarization charges in piezoelectric nanowires and the caused change of carrier scattering in graphene. Compared to the conventional piezoelectric nanowire or graphene pressure sensors, this sensor is capable of measuring static pressures with a sensitivity of up to 9.4 × 10 -3 kPa -1 and a fast response time down to 5-7 ms. This demonstration of pressure sensors shows great potential in the applications of electronic skin and wearable devices.

40 CFR 63.9921 - What are the installation, operation and maintenance requirements for my monitors?

Code of Federal Regulations, 2011 CFR

2011-07-01

...) For the pressure drop CPMS, you must: (i) Locate the pressure sensor(s) in or as close to a position... calibration quarterly and transducer calibration monthly. (v) Conduct calibration checks any time the sensor exceeds the manufacturer's specified maximum operating pressure range, or install a new pressure sensor...

40 CFR 63.9921 - What are the installation, operation and maintenance requirements for my monitors?

Code of Federal Regulations, 2014 CFR

2014-07-01

...) For the pressure drop CPMS, you must: (i) Locate the pressure sensor(s) in or as close to a position... calibration quarterly and transducer calibration monthly. (v) Conduct calibration checks any time the sensor exceeds the manufacturer's specified maximum operating pressure range, or install a new pressure sensor...

40 CFR 63.9921 - What are the installation, operation and maintenance requirements for my monitors?

Code of Federal Regulations, 2012 CFR

2012-07-01

...) For the pressure drop CPMS, you must: (i) Locate the pressure sensor(s) in or as close to a position... calibration quarterly and transducer calibration monthly. (v) Conduct calibration checks any time the sensor exceeds the manufacturer's specified maximum operating pressure range, or install a new pressure sensor...

40 CFR 63.9921 - What are the installation, operation and maintenance requirements for my monitors?

Code of Federal Regulations, 2013 CFR

2013-07-01

...) For the pressure drop CPMS, you must: (i) Locate the pressure sensor(s) in or as close to a position... calibration quarterly and transducer calibration monthly. (v) Conduct calibration checks any time the sensor exceeds the manufacturer's specified maximum operating pressure range, or install a new pressure sensor...

Distributed pressure sensors for a urethral catheter.

PubMed

Ahmadi, Mahdi; Rajamani, Rajesh; Timm, Gerald; Sezen, A S

2015-01-01

A flexible strip that incorporates multiple pressure sensors and is capable of being fixed to a urethral catheter is developed. The urethral catheter thus instrumented will be useful for measurement of pressure in a human urethra during urodynamic testing in a clinic. This would help diagnose the causes of urinary incontinence in patients. Capacitive pressure sensors are fabricated on a flexible polyimide-copper substrate using surface micromachining processes and alignment/assembly of the top and bottom portions of the sensor strip. The developed sensor strip is experimentally evaluated in an in vitro test rig using a pressure chamber. The sensor strip is shown to have adequate sensitivity and repeatability. While the calibration factors for the sensors on the strip vary from one sensor to another, even the least sensitive sensor has a resolution better than 0.1 psi.

Piezoresistive pressure sensor with high sensitivity for medical application using peninsula-island structure

NASA Astrophysics Data System (ADS)

Xu, Tingzhong; Wang, Hongyan; Xia, Yong; Zhao, Zhiming; Huang, Mimi; Wang, Jiuhong; Zhao, Libo; Zhao, Yulong; Jiang, Zhuangde

2017-12-01

A novel micro-electromechanical systems piezoresistive pressure sensor with a diagonally positioned peninsula-island structure has high sensitivity for ultralow- pressure measurement. The pressure sensor was designed with a working range of 0-500 Pa and had a high sensitivity of 0.06 mV·V-1·Pa-1. The trade-off between high sensitivity and linearity was alleviated. Moreover, the influence of the installation angle on the sensing chip output was analyzed, and an application experiment of the sensor was conducted using the built pipettor test platform. Findings indicated that the proposed pressure sensor had sufficient resolution ability and accuracy to detect the pressure variation in the pipettor chamber. Therefore, the proposed pressure sensor has strong potential for medical equipment application.

Flight testing of a luminescent surface pressure sensor

NASA Technical Reports Server (NTRS)

Mclachlan, B. G.; Bell, J. H.; Espina, J.; Gallery, J.; Gouterman, M.; Demandante, C. G. N.; Bjarke, L.

1992-01-01

NASA ARC has conducted flight tests of a new type of aerodynamic pressure sensor based on a luminescent surface coating. Flights were conducted at the NASA ARC-Dryden Flight Research Facility. The luminescent pressure sensor is based on a surface coating which, when illuminated with ultraviolet light, emits visible light with an intensity dependent on the local air pressure on the surface. This technique makes it possible to obtain pressure data over the entire surface of an aircraft, as opposed to conventional instrumentation, which can only make measurements at pre-selected points. The objective of the flight tests was to evaluate the effectiveness and practicality of a luminescent pressure sensor in the actual flight environment. A luminescent pressure sensor was installed on a fin, the Flight Test Fixture (FTF), that is attached to the underside of an F-104 aircraft. The response of one particular surface coating was evaluated at low supersonic Mach numbers (M = 1.0-1.6) in order to provide an initial estimate of the sensor's capabilities. This memo describes the test approach, the techniques used, and the pressure sensor's behavior under flight conditions. A direct comparison between data provided by the luminescent pressure sensor and that produced by conventional pressure instrumentation shows that the luminescent sensor can provide quantitative data under flight conditions. However, the test results also show that the sensor has a number of limitations which must be addressed if this technique is to prove useful in the flight environment.

Validation of a new micro-manometer pressure sensor for cardiovascular measurements in mice.

PubMed

Trevino, Rodolfo J; Jones, Douglas L; Escobedo, Daniel; Porterfield, John; Larson, Erik; Chisholm, Gary B; Barton, Amanda; Feldman, Marc D

2010-01-01

Abstract The Scisense (London, ON, Canada) micro-manometer pressure sensor is currently being used by investigators to evaluate cardiovascular physiology in mice, but has not been validated to date. The purpose of the current study is to compare the 1.2 F Scisense pressure sensor to the current gold standard produced by Millar Instruments (Houston, TX) (1.4 F). In vitro comparisons were preformed including temperature drift, frequency response analysis up to 250 Hz, and damping coefficient and natural frequency determined via a pop test. The authors also performed in vivo comparisons including pressure drift, dose-response studies to IV isoproterenol, maximum adrenergic stimulation with IV dobutamine, and simultaneous placement of both micro-manometer pressure sensors in the same intact murine hearts. The authors conclude that both sensors are equivalent, and that the Scisense pressure sensor represents an alternative to the current gold standard, the Millar micro-manometer pressure sensor for in vivo pressure measurements in the mouse.

EIT-based fabric pressure sensing.

PubMed

Yao, A; Yang, C L; Seo, J K; Soleimani, M

2013-01-01

This paper presents EIT-based fabric sensors that aim to provide a pressure mapping using the current carrying and voltage sensing electrodes attached to the boundary of the fabric patch. Pressure-induced shape change over the sensor area makes a change in the conductivity distribution which can be conveyed to the change of boundary current-voltage data. This boundary data is obtained through electrode measurements in EIT system. The corresponding inverse problem is to reconstruct the pressure and deformation map from the relationship between the applied current and the measured voltage on the fabric boundary. Taking advantage of EIT in providing dynamical images of conductivity changes due to pressure induced shape change, the pressure map can be estimated. In this paper, the EIT-based fabric sensor was presented for circular and rectangular sensor geometry. A stretch sensitive fabric was used in circular sensor with 16 electrodes and a pressure sensitive fabric was used in a rectangular sensor with 32 electrodes. A preliminary human test was carried out with the rectangular sensor for foot pressure mapping showing promising results.

An Optical Fibre Depth (Pressure) Sensor for Remote Operated Vehicles in Underwater Applications

PubMed Central

Duraibabu, Dinesh Babu; Poeggel, Sven; Omerdic, Edin; Capocci, Romano; Lewis, Elfed; Newe, Thomas; Leen, Gabriel; Toal, Daniel; Dooly, Gerard

2017-01-01

A miniature sensor for accurate measurement of pressure (depth) with temperature compensation in the ocean environment is described. The sensor is based on an optical fibre Extrinsic Fabry-Perot interferometer (EFPI) combined with a Fibre Bragg Grating (FBG). The EFPI provides pressure measurements while the Fibre Bragg Grating (FBG) provides temperature measurements. The sensor is mechanically robust, corrosion-resistant and suitable for use in underwater applications. The combined pressure and temperature sensor system was mounted on-board a mini remotely operated underwater vehicle (ROV) in order to monitor the pressure changes at various depths. The reflected optical spectrum from the sensor was monitored online and a pressure or temperature change caused a corresponding observable shift in the received optical spectrum. The sensor exhibited excellent stability when measured over a 2 h period underwater and its performance is compared with a commercially available reference sensor also mounted on the ROV. The measurements illustrates that the EFPI/FBG sensor is more accurate for depth measurements (depth of ~0.020 m). PMID:28218727

Applications of pressure-sensitive dielectric elastomer sensors

NASA Astrophysics Data System (ADS)

Böse, Holger; Ocak, Deniz; Ehrlich, Johannes

2016-04-01

Dielectric elastomer sensors for the measurement of compression loads with high sensitivity are described. The basic design of the sensors exhibits two profiled surfaces between which an elastomer film is confined. All components of the sensor were prepared with silicone whose stiffness can be varied in a wide range. Depending on details of the sensor design, various effects contribute to the enhancement of the capacitance. The intermediate elastomer film is stretched upon compression and electrode layers on the elastomer profiles and in the elastomer film approach each other. Different designs of the pressure sensor give rise to very different sensor characteristics in terms of the dependence of electric capacitance on compression force. Due to their inherent flexibility, the pressure sensors can be used on compliant substrates such as seats or beds or on the human body. This gives rise to numerous possible applications. The contribution describes also some examples of possible sensor applications. A glove was equipped with various sensors positioned at the finger tips. When grabbing an object with the glove, the sensors can detect the gripping forces of the individual fingers with high sensitivity. In a demonstrator of the glove equipped with seven sensors, the capacitances representing the gripping forces are recorded on a display. In another application example, a lower limb prosthesis was equipped with a pressure sensor to detect the load on the remaining part of the leg and the load is displayed in terms of the measured capacitance. The benefit of such sensors is to detect an eventual overload in order to prevent possible pressure sores. A third example introduces a seat load sensor system based on four extended pressure sensor mats. The sensor system detects the load distribution of a person on the seat. The examples emphasize the high performance of the new pressure sensor technology.

Fabrication and Performance of MEMS-Based Pressure Sensor Packages Using Patterned Ultra-Thick Photoresists

PubMed Central

Chen, Lung-Tai; Chang, Jin-Sheng; Hsu, Chung-Yi; Cheng, Wood-Hi

2009-01-01

A novel plastic packaging of a piezoresistive pressure sensor using a patterned ultra-thick photoresist is experimentally and theoretically investigated. Two pressure sensor packages of the sacrifice-replacement and dam-ring type were used in this study. The characteristics of the packaged pressure sensors were investigated by using a finite-element (FE) model and experimental measurements. The results show that the thermal signal drift of the packaged pressure sensor with a small sensing-channel opening or with a thin silicon membrane for the dam-ring approach had a high packaging induced thermal stress, leading to a high temperature coefficient of span (TCO) response of −0.19% span/°C. The results also show that the thermal signal drift of the packaged pressure sensors with a large sensing-channel opening for sacrifice-replacement approach significantly reduced packaging induced thermal stress, and hence a low TCO response of −0.065% span/°C. However, the packaged pressure sensors of both the sacrifice-replacement and dam-ring type still met the specification −0.2% span/°C of the unpackaged pressure sensor. In addition, the size of proposed packages was 4 × 4 × 1.5 mm3 which was about seven times less than the commercialized packages. With the same packaging requirement, the proposed packaging approaches may provide an adequate solution for use in other open-cavity sensors, such as gas sensors, image sensors, and humidity sensors. PMID:22454580

HOPG/ZnO/HOPG pressure sensor

NASA Astrophysics Data System (ADS)

Jahangiri, Mojtaba; Yousefiazari, Ehsan; Ghalamboran, Milad

2017-12-01

Pressure sensor is one of the most commonly used sensors in the research laboratories and industries. These are generally categorized in three different classes of absolute pressure sensors, gauge pressure sensors, and differential pressure sensors. In this paper, we fabricate and assess the pressure sensitivity of the current vs. voltage diagrams in a graphite/ZnO/graphite structure. Zinc oxide layers are deposited on highly oriented pyrolytic graphite (HOPG) substrates by sputtering a zinc target under oxygen plasma. The top electrode is also a slice of HOPG which is placed on the ZnO layer and connected to the outside electronic circuits. By recording the I-V characteristics of the device under different forces applied to the top HOPG electrode, the pressure sensitivity is demonstrated; at the optimum biasing voltage, the device current changes 10 times upon changing the pressure level on the top electrode by 20 times. Repeatability and reproducibility of the observed effect is studied on the same and different samples. All the materials used for the fabrication of this pressure sensor are biocompatible, the fabricated device is anticipated to find potential applications in biomedical engineering.

Test Structures for Rapid Prototyping of Gas and Pressure Sensors

NASA Technical Reports Server (NTRS)

Buehler, M.; Cheng, L. J.; Martin, D.

1996-01-01

A multi-project ceramic substrate was used in developing a gas sensor and pressure sensor. The ceramic substrate cantained 36 chips with six variants including sensors, process control monitors, and an interconnect ship. Tha gas sensor is being developed as an air quality monitor and the pressure gauge as a barometer.

Novel Designs for Application Specific MEMS Pressure Sensors

PubMed Central

Fragiacomo, Giulio; Reck, Kasper; Lorenzen, Lasse; Thomsen, Erik V.

2010-01-01

In the framework of developing innovative microfabricated pressure sensors, we present here three designs based on different readout principles, each one tailored for a specific application. A touch mode capacitive pressure sensor with high sensitivity (14 pF/bar), low temperature dependence and high capacitive output signal (more than 100 pF) is depicted. An optical pressure sensor intrinsically immune to electromagnetic interference, with large pressure range (0–350 bar) and a sensitivity of 1 pm/bar is presented. Finally, a resonating wireless pressure sensor power source free with a sensitivity of 650 KHz/mmHg is described. These sensors will be related with their applications in harsh environment, distributed systems and medical environment, respectively. For many aspects, commercially available sensors, which in vast majority are piezoresistive, are not suited for the applications proposed. PMID:22163425

Research of pressure sensor based on the fiber Bragg grating for permanent downwell monitoring application

NASA Astrophysics Data System (ADS)

Liu, Lina; Long, Pin; Liu, Tiegen

2004-11-01

Timely, accurate and reliable pressure information about how the reservoir is performing is an important component to optimizing oil yield and production rates. This paper reviews the use of fiber optical pressure sensor for downhole monitoring in the oil industry. Several types of pressure transducer with different characteristics have been introduced. Due to their multiplexing capabilities and versatility ,the use of Bragg grating sensors appears to be particularly suited for this application. A sensor for accurate and long term fluid pressure monitoring based on optical fiber Bragg gratings(FBGs) is developed. The sensor converts fluid pressure into optical fiber strain by means of a mechanical transducer to enhance its sensitivity to pressure. It can also implement distributed or multiplexed sensing. The sensor operation is studied at pressure up to 100 Mpa(1000bar) and the tested temperature to ~175°. It is possible to be used in the well.

Advantages of core-shell particle columns in Sequential Injection Chromatography for determination of phenolic acids.

PubMed

Chocholouš, Petr; Vacková, Jana; Srámková, Ivana; Satínský, Dalibor; Solich, Petr

2013-01-15

Currently, for Sequential Injection Chromatography (SIC), only reversed phase C18 columns have been used for chromatographic separations. This article presents the first use of three different stationary phases: three core-shell particle-packed reversed phase columns in flow systems. The aim of this work was to extend the chromatographic capabilities of the SIC system. Despite the particle-packed columns reaching system pressures of ≤ 610 PSI, their conditions matched those of a commercially produced and optimised SIC system (SIChrom™ (FIAlab(®), USA)) with a 8-port high-pressure selection valve and medium-pressure Sapphire™ syringe pump with a 4 mL reservoir and maximum system pressure of ≤ 1000 PSI. The selectivity of each of the tested columns, Ascentis(®) Express RP-Amide, Ascentis(®) Express Phenyl-Hexyl and Ascentis(®) Express C18 (30 mm × 4.6mm, core-shell particle size 2.7 μm), was compared by their ability to separate seven phenolic acids that are secondary metabolite substances widely distributed in plants. The separations of all of the components were performed by isocratic elution using binary mobile phases composed of acetonitrile and 0.065% phosphoric acid at pH 2.4 (a specific ratio was used for each column) at a flow-rate of 0.60 mL/min. The volume of the mobile phase was 3.8 mL for each separation. The injection volume of the sample was 10 μL for each separation. The UV detection wavelengths were set to 250, 280 and 325 nm. The RP-Amide column provided the highest chromatographic resolution and allowed for complete baseline separation of protocatechuic, syringic, vanillic, ferulic, sinapinic, p-coumaric and o-coumaric acids. The Phenyl-Hexyl and C18 columns were unable to completely separate the tested mixture, syringic and vanillic acid and ferulic and sinapinic acids could not be separated from one another. The analytical parameters were a LOD of 0.3 mg L(-1), a LOQ of 1.0 mg L(-1), a calibration range of 1.0-50.0 (100.0) mg L(-1) (r>0.997) and a system precision of 10 mg L(-1) with a RSD ≤ 1.65%. The high performance of the chromatography process with the RP-Amide column under optimised conditions was highlighted and well documented (HETP values ≤ 10 μm, peak symmetry ≤ 1.33, resolution ≥ 1.87 and time for one analysis <8.0 min). The results of these experiments confirmed the benefits of extending chromatographic selectivity using core-shell particle column technology in a SIC manifold. Copyright © 2012 Elsevier B.V. All rights reserved.

Isolating Gas Sensor From Pressure And Temperature Effects

NASA Technical Reports Server (NTRS)

Sprinkle, Danny R.; Chen, Tony T. D.; Chaturvedi, Sushi K.

1994-01-01

Two-stage flow system enables oxygen sensor in system to measure oxygen content of low-pressure, possibly-high-temperature atmosphere in test environment while protecting sensor against possibly high temperature and fluctuations in pressure of atmosphere. Sensor for which flow system designed is zirconium oxide oxygen sensor sampling atmospheres in high-temperature wind tunnels. Also adapted to other gas-analysis instruments that must be isolated from pressure and temperature effects of test environments.

Field assisted sintering of refractory carbide ceramics and fiber reinforced ceramic matrix composites

NASA Astrophysics Data System (ADS)

Gephart, Sean

The sintering behaviors of silicon carbide (SiC) and boron carbide (B4C) based materials were investigated using an emerging sintering technology known as field assisted sintering technology (FAST), also known as spark plasma sintering (SPS) and pulse electric current sintering (PECS). Sintering by FAST utilizes high density electric current, uniaxial pressure, and relatively high heating rate compared to conventional sintering techniques. This effort investigated issues of scaling from laboratory FAST system (25 ton capacity) to industrial FAST system (250 ton capacity), as well as exploring the difference in sintering behavior of single phase B4C and SiC using FAST and conventional sintering techniques including hot-pressing (HP) and pressure-less sintering (PL). Materials were analyzed for mechanical and bulk properties, including characterization of density, hardness, fracture toughness, fracture (bend) strength, elastic modulus and microstructure. A parallel investigation was conducted in the development of ceramic matrix composites (CMC) using SiC powder impregnation of fiber compacts followed by FAST sintering. The FAST technique was used to sinter several B4C and SiC materials to near theoretical density. Preliminary efforts established optimized sintering temperatures using the smaller 25 ton laboratory unit, targeting a sample size of 40 mm diameter and 8 mm thickness. Then the same B4C and SiC materials were sintered by the larger 250 ton industrial FAST system, a HP system, and PL sintering system with a targeted dense material geometry of 4 x 4 x 0.315 inches3 (101.6 x 101.6 x 8 mm3). The resulting samples were studied to determine if the sintering dynamics and/or the resulting material properties were influenced by the sintering technique employed. This study determined that FAST sintered ceramic materials resulted in consistently higher averaged values for mechanical properties as well as smaller grain size when compared to conventionally sintered materials. While FAST sintered materials showed higher average values, in general they also showed consistently larger variation in the scattered data and consequently larger standard deviation for the resulting material properties. In addition, dynamic impact testing (V50 test) was conducted on the resulting materials and it was determined that there was no discernable correlation between observed mechanical properties of the ceramic materials and the resulting dynamic testing. Another study was conducted on the sintering of SiC and carbon fiber reinforced SiC ceramic matrix composites (CMC) using FAST. There has been much interest recently in fabricating high strength, low porosity SiC CMC.s for high temperature structural applications, but the current methods of production, namely chemical vapor infiltration (CVI), melt infiltration (MI), and polymer infiltration and pyrolysis (PIP), are considered time consuming and involve material related shortcomings associated with their respective methodologies. In this study, SiC CMC.s were produced using the 25 ton laboratory unit with a target sample size of 40 mm diameter and 3 mm thickness, as well as on the larger 250 ton industrial FAST system targeting a sample size of 101.6 x 101.6 x 3 mm3 to investigate issues associated with scaling. Several sintering conditions were explored including: pressure of 35-65 MPa, temperature of 1700-1900°C, and heating rates between 50-400°C/min. The SiC fibers used in this study were coated using chemical vapor deposition (CVD) with boron nitride (BN) and pyrolytic carbon to act as a barrier layer and preserve the integrity of the fibers during sintering. Then the barrier coating was coated by an outer layer of SiC to enhance the bonding between the fibers and the SiC matrix. Microstructures of the sintered samples were examined by FE-SEM. Mechanical properties including flexural strength-deflection and stress-strain were characterized using 4-point bend testing. Tensile testing was performed on the larger 101.6 x 101.6 x 3 mm samples. The microstructures of samples sintered using the 25 ton laboratory FAST system showed a reduction in porosity and good adhesion between the fiber-fiber and fiber-matrix interface. The microstructures of samples sintered on the 250 ton industrial FAST system showed a reduction in porosity, but there was visible reaction of the fiber and fiber coatings with the surrounding matrix. Additionally, there was significant radial cracking of the fibers visible in the microstructures. There is gap in the understanding of sintering behavior between laboratory and industrial scale FAST systems. The vast majority of publications on FAST sintering have been primarily focused on small sample geometries (20 mm diameter, less than 3 mm thick). A study was coordinated to investigate the thermal properties during heating and cooling using a 250 ton industrial FAST system at 900°C using B4C and SiC materials inside the graphite die assembly. The thermal properties were then compared to the resulting material properties of the identically sintered B4C and SiC to approximately 94% relative density, at a temperature of 1950°C, pressure of 45 MPa, 10 minute hold, and heated at a rate of 100°C/min. The study determined that at 900°C there were significant thermal gradients within the system for the examined materials, and that these gradients correlated well with the material property difference of the samples sintered at higher temperatures where the gradients are presumably larger due to an increase in radiative heat loss. The observed temperatures throughout the graphite were significantly different between B4C and SiC. These temperatures also correlated well with the material properties of the sintered products which showed more substantial variation for B4C when compared to SiC which was overall less affected by thermal gradients. This was attributed to the intrinsic thermal conductivity difference between the two subject materials which was manifested as thermal gradients throughout the material and graphite die assembly. Additionally, both the observed temperature gradients throughout the graphite die assembly and the difference in temperature reading between the optical pyrometer and thermocouples were significantly larger for the 250 ton FAST system than previous publications have demonstrated experimentally or via modeling of smaller laboratory scale systems. The findings from this work showed that relative to conventional sintering methods, the FAST process demonstrated comparable or improved material and mechanical properties with a significantly shorter processing cycle. However, the results demonstrated on the 25 ton laboratory scale unit were significantly different compared to results for the same materials sintered using the 250 ton industrial scale unit. The temperature gradients observed on the 250 ton FAST unit were significantly larger than previous reports on smaller FAST units. This result showed future efforts to scale up the FAST sintering process while maintaining similar results will require careful attention to minimizing temperature gradients. This could potentially be achieved by reducing radiative heat loss during processing and/or optimizing the graphite die design and implementing heat spreaders in specific locations dependent on the host material.s thermal and electrical properties as well as the sample geometry.

Noncontact Monitoring of Respiration by Dynamic Air-Pressure Sensor.

PubMed

Takarada, Tohru; Asada, Tetsunosuke; Sumi, Yoshihisa; Higuchi, Yoshinori

2015-01-01

We have previously reported that a dynamic air-pressure sensor system allows respiratory status to be visually monitored for patients in minimally clothed condition. The dynamic air-pressure sensor measures vital information using changes in air pressure. To utilize this device in the field, we must clarify the influence of clothing conditions on measurement. The present study evaluated use of the dynamic air-pressure sensor system as a respiratory monitor that can reliably detect change in breathing patterns irrespective of clothing. Twelve healthy volunteers reclined on a dental chair positioned horizontally with the sensor pad for measuring air-pressure signals corresponding to respiration placed on the seat back of the dental chair in the central lumbar region. Respiratory measurements were taken under 2 conditions: (a) thinly clothed (subject lying directly on the sensor pad); and (b) thickly clothed (subject lying on the sensor pad covered with a pressure-reducing sheet). Air-pressure signals were recorded and time integration values for air pressure during each expiration were calculated. This information was compared with expiratory tidal volume measured simultaneously by a respirometer connected to the subject via face mask. The dynamic air-pressure sensor was able to receive the signal corresponding to respiration regardless of clothing conditions. A strong correlation was identified between expiratory tidal volume and time integration values for air pressure during each expiration for all subjects under both clothing conditions (0.840-0.988 for the thinly clothed condition and 0.867-0.992 for the thickly clothed condition). These results show that the dynamic air-pressure sensor is useful for monitoring respiratory physiology irrespective of clothing.

Investigation of the Surface Stress in SiC and Diamond Nanocrystals by In-situ High Pressure Powder Diffraction Technique

NASA Technical Reports Server (NTRS)

Palosz, B.; Stelmakh, S.; Grzanka, E.; Gierlotka, S.; Zhao, Y.; Palosz, W.

2003-01-01

The real atomic structure of nanocrystals determines key properties of the materials. For such materials the serious experimental problem lies in obtaining sufficiently accurate measurements of the structural parameters of the crystals, since very small crystals constitute rather a two-phase than a uniform crystallographic phase system. As a result, elastic properties of nanograins may be expected to reflect a dual nature of their structure, with a corresponding set of different elastic property parameters. We studied those properties by in-situ high-pressure powder diffraction technique. For nanocrystalline, even one-phase materials such measurements are particularly difficult to make since determination of the lattice parameters of very small crystals presents a challenge due to inherent limitations of standard elaboration of powder diffractograms. In this investigation we used our methodology of the structural analysis, the 'apparent lattice parameter' (alp) concept. The methodology allowed us to avoid the traps (if applied to nanocrystals) of standard powder diffraction evaluation techniques. The experiments were performed for nanocrystalline Sic and GaN powders using synchrotron sources. We applied both hydrostatic and isostatic pressures in the range of up to 40 GPa. Elastic properties of the samples were examined based on the measurements of a change of the lattice parameters with pressure. The results show a dual nature of the mechanical properties (compressibilities) of the materials, indicating a complex, core-shell structure of the grains.

Fully wireless pressure sensor based on endoscopy images

NASA Astrophysics Data System (ADS)

Maeda, Yusaku; Mori, Hirohito; Nakagawa, Tomoaki; Takao, Hidekuni

2018-04-01

In this paper, the result of developing a fully wireless pressure sensor based on endoscopy images for an endoscopic surgery is reported for the first time. The sensor device has structural color with a nm-scale narrow gap, and the gap is changed by air pressure. The structural color of the sensor is acquired from camera images. Pressure detection can be realized with existing endoscope configurations only. The inner air pressure of the human body should be measured under flexible-endoscope operation using the sensor. Air pressure monitoring, has two important purposes. The first is to quantitatively measure tumor size under a constant air pressure for treatment selection. The second purpose is to prevent the endangerment of a patient due to over transmission of air. The developed sensor was evaluated, and the detection principle based on only endoscopy images has been successfully demonstrated.

Application of Powder Diffraction Methods to the Analysis of Short- and Long-Range Atomic Order in Nanocrystalline Diamond and SiC: The Concept of the Apparent Lattice Parameter (alp)

NASA Technical Reports Server (NTRS)

Palosz, B.; Grzanka, E.; Gierlotka, S.; Stelmakh, S.; Pielaszek, R.; Bismayer, U.; Weber, H.-P.; Palosz, W.

2003-01-01

Two methods of the analysis of powder diffraction patterns of diamond and SiC nanocrystals are presented: (a) examination of changes of the lattice parameters with diffraction vector Q ('apparent lattice parameter', alp) which refers to Bragg scattering, and (b), examination of changes of inter-atomic distances based on the analysis of the atomic Pair Distribution Function, PDF. Application of these methods was studied based on the theoretical diffraction patterns computed for models of nanocrystals having (i) a perfect crystal lattice, and (ii), a core-shell structure, i.e. constituting a two-phase system. The models are defined by the lattice parameter of the grain core, thickness of the surface shell, and the magnitude and distribution of the strain field in the shell. X-ray and neutron experimental diffraction data of nanocrystalline SiC and diamond powders of the grain diameter from 4 nm up to micrometers were used. The effects of the internal pressure and strain at the grain surface on the structure are discussed based on the experimentally determined dependence of the alp values on the Q-vector, and changes of the interatomic distances with the grain size determined experimentally by the atomic Pair Distribution Function (PDF) analysis. The experimental results lend a strong support to the concept of a two-phase, core and the surface shell structure of nanocrystalline diamond and SiC.

Oxidation of Ultra High Temperature Ceramics in Water Vapor

NASA Technical Reports Server (NTRS)

Nguyen, QuynhGiao N.; Opila, Elizabeth J.; Robinson, Raymond C.

2004-01-01

Ultra High Temperature Ceramics (UHTCs) including HfB2 + 20v/0 SiC (HS), ZrB2 + 20v/0 SiC (ZS), and ZrB2 + 30v/0 C + 14v/0 SiC (ZCS) have been investigated for use as potential aeropropulsion engine materials. These materials were oxidized in water vapor (90 percent) using a cyclic vertical furnace at 1 atm. The total exposure time was 10 h at temperatures of 1200, 1300, and 1400 C. CVD SiC was also evaluated as a baseline for comparison. Weight change, X-ray diffraction analyses, surface and cross-sectional SEM and EDS were performed. These results are compared with tests ran in a stagnant air furnace at temperatures of 1327 C for 100 min, and with high pressure burner rig (HPBR) results at 1100 and 1300 C at 6 atm for 50 h. Low velocity water vapor does not make a significant contribution to the oxidation rates of UHTCs when compared to stagnant air. The parabolic rate constants at 1300 C, range from 0.29 to 16.0 mg(sup 2)cm(sup 4)/h for HS and ZCS, respectively, with ZS results between these two values. Comparison of results for UHTCs tested in the furnace in 90 percent water vapor with HPBR results was difficult due to significant sample loss caused by spallation in the increased velocity of the HPBR. Total recession measurements are also reported for the two test environments.

Static and cyclic performance evaluation of sensors for human interface pressure measurement.

PubMed

Dabling, Jeffrey G; Filatov, Anton; Wheeler, Jason W

2012-01-01

Researchers and clinicians often desire to monitor pressure distributions on soft tissues at interfaces to mechanical devices such as prosthetics, orthotics or shoes. The most common type of sensor used for this type of applications is a Force Sensitive Resistor (FSR) as these are convenient to use and inexpensive. Several other types of sensors exist that may have superior sensing performance but are less ubiquitous or more expensive, such as optical or capacitive sensors. We tested five sensors (two FSRs, one optical, one capacitive and one fluid pressure) in a static drift and cyclic loading configuration. The results show that relative to the important performance characteristics for soft tissue pressure monitoring (i.e. hysteresis, drift), many of the sensors tested have significant limitations. The FSRs exhibited hysteresis, drift and loss of sensitivity under cyclic loading. The capacitive sensor had substantial drift. The optical sensor had some hysteresis and temperature-related drift. The fluid pressure sensor performed well in these tests but is not as flat as the other sensors and is not commercially available. Researchers and clinicians should carefully consider the convenience and performance trade-offs when choosing a sensor for soft-tissue pressure monitoring.

Method and Apparatus for Characterizing Pressure Sensors using Modulated Light Beam Pressure

NASA Technical Reports Server (NTRS)

Youngquist, Robert C. (Inventor)

2003-01-01

Embodiments of apparatuses and methods are provided that use light sources instead of sound sources for characterizing and calibrating sensors for measuring small pressures to mitigate many of the problems with using sound sources. In one embodiment an apparatus has a light source for directing a beam of light on a sensing surface of a pressure sensor for exerting a force on the sensing surface. The pressure sensor generates an electrical signal indicative of the force exerted on the sensing surface. A modulator modulates the beam of light. A signal processor is electrically coupled to the pressure sensor for receiving the electrical signal.

Embedded Acoustic Sensor Array for Engine Fan Noise Source Diagnostic Test: Feasibility of Noise Telemetry via Wireless Smart Sensors

NASA Technical Reports Server (NTRS)

Zaman, Afroz; Bauch, Matthew; Raible, Daniel

2011-01-01

Aircraft engines have evolved into a highly complex system to meet ever-increasing demands. The evolution of engine technologies has primarily been driven by fuel efficiency, reliability, as well as engine noise concerns. One of the sources of engine noise is pressure fluctuations that are induced on the stator vanes. These local pressure fluctuations, once produced, propagate and coalesce with the pressure waves originating elsewhere on the stator to form a spinning pressure pattern. Depending on the duct geometry, air flow, and frequency of fluctuations, these spinning pressure patterns are self-sustaining and result in noise which eventually radiate to the far-field from engine. To investigate the nature of vane pressure fluctuations and the resulting engine noise, unsteady pressure signatures from an array of embedded acoustic sensors are recorded as a part of vane noise source diagnostics. Output time signatures from these sensors are routed to a control and data processing station adding complexity to the system and cable loss to the measured signal. "Smart" wireless sensors have data processing capability at the sensor locations which further increases the potential of wireless sensors. Smart sensors can process measured data locally and transmit only the important information through wireless communication. The aim of this wireless noise telemetry task was to demonstrate a single acoustic sensor wireless link for unsteady pressure measurement, and thus, establish the feasibility of distributed smart sensors scheme for aircraft engine vane surface unsteady pressure data transmission and characterization.

An optical method for measuring exhaust gas pressure from an internal combustion engine at high speed

NASA Astrophysics Data System (ADS)

Leach, Felix C. P.; Davy, Martin H.; Siskin, Dmitrij; Pechstedt, Ralf; Richardson, David

2017-12-01

Measurement of exhaust gas pressure at high speed in an engine is important for engine efficiency, computational fluid dynamics analysis, and turbocharger matching. Currently used piezoresistive sensors are bulky, require cooling, and have limited lifetimes. A new sensor system uses an interferometric technique to measure pressure by measuring the size of an optical cavity, which varies with pressure due to movement of a diaphragm. This pressure measurement system has been used in gas turbine engines where the temperatures and pressures have no significant transients but has never been applied to an internal combustion engine before, an environment where both temperature and pressure can change rapidly. This sensor has been compared with a piezoresistive sensor representing the current state-of-the-art at three engine operating points corresponding to both light load and full load. The results show that the new sensor can match the measurements from the piezoresistive sensor except when there are fast temperature swings, so the latter part of the pressure during exhaust blowdown is only tracked with an offset. A modified sensor designed to compensate for these temperature effects is also tested. The new sensor has shown significant potential as a compact, durable sensor, which does not require external cooling.

An optical method for measuring exhaust gas pressure from an internal combustion engine at high speed.

PubMed

Leach, Felix C P; Davy, Martin H; Siskin, Dmitrij; Pechstedt, Ralf; Richardson, David

2017-12-01

Measurement of exhaust gas pressure at high speed in an engine is important for engine efficiency, computational fluid dynamics analysis, and turbocharger matching. Currently used piezoresistive sensors are bulky, require cooling, and have limited lifetimes. A new sensor system uses an interferometric technique to measure pressure by measuring the size of an optical cavity, which varies with pressure due to movement of a diaphragm. This pressure measurement system has been used in gas turbine engines where the temperatures and pressures have no significant transients but has never been applied to an internal combustion engine before, an environment where both temperature and pressure can change rapidly. This sensor has been compared with a piezoresistive sensor representing the current state-of-the-art at three engine operating points corresponding to both light load and full load. The results show that the new sensor can match the measurements from the piezoresistive sensor except when there are fast temperature swings, so the latter part of the pressure during exhaust blowdown is only tracked with an offset. A modified sensor designed to compensate for these temperature effects is also tested. The new sensor has shown significant potential as a compact, durable sensor, which does not require external cooling.

Optical detection system for MEMS-type pressure sensor

NASA Astrophysics Data System (ADS)

Sareło, K.; Górecka-Drzazga, A.; Dziuban, J. A.

2015-07-01

In this paper a special optical detection system designed for a MEMS-type (micro-electro-mechanical system) silicon pressure sensor is presented. The main part of the optical system—a detection unit with a perforated membrane—is bonded to the silicon sensor, and placed in a measuring system. An external light source illuminates the membrane of the pressure sensor. Owing to the light reflected from the deflected membrane sensor, the optical pattern consisting of light points is visible, and pressure can be estimated. The optical detection unit (20   ×   20   ×   20.4 mm3) is fabricated using microengineering techniques. Its dimensions are adjusted to the dimensions of the pressure sensor (5   ×   5 mm2 silicon membrane). Preliminary tests of the optical detection unit integrated with the silicon pressure sensor are carried out. For the membrane sensor from 15 to 60 µm thick, a repeatable detection of the differential pressure in the range of 0 to 280 kPa is achieved. The presented optical microsystem is especially suitable for the pressure measurements in a high radiation environment.

A Comparative Study of Sound Speed in Air at Room Temperature between a Pressure Sensor and a Sound Sensor

ERIC Educational Resources Information Center

Amrani, D.

2013-01-01

This paper deals with the comparison of sound speed measurements in air using two types of sensor that are widely employed in physics and engineering education, namely a pressure sensor and a sound sensor. A computer-based laboratory with pressure and sound sensors was used to carry out measurements of air through a 60 ml syringe. The fast Fourier…

Recommendation of Sensors for Vehicle Transmission Diagnostics

DTIC Science & Technology

2012-05-01

and a pressure switch module form the Control value module. A thermistor is contained within the pressure switch module in order to monitor the sump...fluid temperature. Sensor information is provided to the TCM through various sensors such as throttle position, speed sensor, pressure switch module

40 CFR 1065.215 - Pressure transducers, temperature sensors, and dewpoint sensors.

Code of Federal Regulations, 2014 CFR

2014-07-01

... sensors, such as resistive temperature detectors (RTDs). (d) Pressure. Pressure transducers must be... chilled-surface hygrometers, which include chilled mirror detectors and chilled surface acoustic wave (SAW) detectors. For other applications, we recommend thin-film capacitance sensors. You may use other dewpoint...

40 CFR 1065.215 - Pressure transducers, temperature sensors, and dewpoint sensors.

Code of Federal Regulations, 2013 CFR

2013-07-01

... sensors, such as resistive temperature detectors (RTDs). (d) Pressure. Pressure transducers must be... chilled-surface hygrometers, which include chilled mirror detectors and chilled surface acoustic wave (SAW) detectors. For other applications, we recommend thin-film capacitance sensors. You may use other dewpoint...

40 CFR 1065.215 - Pressure transducers, temperature sensors, and dewpoint sensors.

Code of Federal Regulations, 2011 CFR

2011-07-01

... sensors, such as resistive temperature detectors (RTDs). (d) Pressure. Pressure transducers must be... chilled-surface hygrometers, which include chilled mirror detectors and chilled surface acoustic wave (SAW) detectors. For other applications, we recommend thin-film capacitance sensors. You may use other dewpoint...

40 CFR 1065.215 - Pressure transducers, temperature sensors, and dewpoint sensors.

Code of Federal Regulations, 2012 CFR

2012-07-01

... sensors, such as resistive temperature detectors (RTDs). (d) Pressure. Pressure transducers must be... chilled-surface hygrometers, which include chilled mirror detectors and chilled surface acoustic wave (SAW) detectors. For other applications, we recommend thin-film capacitance sensors. You may use other dewpoint...

An Insertable Passive LC Pressure Sensor Based on an Alumina Ceramic for In Situ Pressure Sensing in High-Temperature Environments.

PubMed

Xiong, Jijun; Li, Chen; Jia, Pinggang; Chen, Xiaoyong; Zhang, Wendong; Liu, Jun; Xue, Chenyang; Tan, Qiulin

2015-08-31

Pressure measurements in high-temperature applications, including compressors, turbines, and others, have become increasingly critical. This paper proposes an implantable passive LC pressure sensor based on an alumina ceramic material for in situ pressure sensing in high-temperature environments. The inductance and capacitance elements of the sensor were designed independently and separated by a thermally insulating material, which is conducive to reducing the influence of the temperature on the inductance element and improving the quality factor of the sensor. In addition, the sensor was fabricated using thick film integrated technology from high-temperature materials that ensure stable operation of the sensor in high-temperature environments. Experimental results showed that the sensor accurately monitored pressures from 0 bar to 2 bar at temperatures up to 800 °C. The sensitivity, linearity, repeatability error, and hysteretic error of the sensor were 0.225 MHz/bar, 95.3%, 5.5%, and 6.2%, respectively.

An Insertable Passive LC Pressure Sensor Based on an Alumina Ceramic for In Situ Pressure Sensing in High-Temperature Environments

PubMed Central

Xiong, Jijun; Li, Chen; Jia, Pinggang; Chen, Xiaoyong; Zhang, Wendong; Liu, Jun; Xue, Chenyang; Tan, Qiulin

2015-01-01

Pressure measurements in high-temperature applications, including compressors, turbines, and others, have become increasingly critical. This paper proposes an implantable passive LC pressure sensor based on an alumina ceramic material for in situ pressure sensing in high-temperature environments. The inductance and capacitance elements of the sensor were designed independently and separated by a thermally insulating material, which is conducive to reducing the influence of the temperature on the inductance element and improving the quality factor of the sensor. In addition, the sensor was fabricated using thick film integrated technology from high-temperature materials that ensure stable operation of the sensor in high-temperature environments. Experimental results showed that the sensor accurately monitored pressures from 0 bar to 2 bar at temperatures up to 800 °C. The sensitivity, linearity, repeatability error, and hysteretic error of the sensor were 0.225 MHz/bar, 95.3%, 5.5%, and 6.2%, respectively. PMID:26334279

A Ubiquitous Blood Pressure Sensor Worn at the Ear

NASA Astrophysics Data System (ADS)

Koizumi, Hiroshi; Shimada, Junichi; Uenishi, Yuji; Tochikubo, Osamu

2009-12-01

Blood pressure (BP) measurement and BP control are important for the prevention of lifestyle diseases, especially hypertension, which can lead to more serious conditions, such as cardiac infarction and cerebral apoplexy. The purpose of our study is to develop a ubiquitous blood pressure sensor that is more comfortable and less disruptive of users' daily activities than conventional blood pressure sensors. Our developed sensor is worn at an ear orifice and measures blood pressure at the tragus. This paper describes the concept, configuration, and the optical and electronic details of the developed ear-worn blood pressure sensor and presents preliminary evaluation results. The developed sensor causes almost no discomfort and produces signals whose quality is high enough for detecting BP at an ear, making it suitable for ubiquitous usage.

The Abundance of SiC2 in Carbon Star Envelopes: Evidence that SiC2 is a gas-phase precursor of SiC dust.

PubMed

Massalkhi, Sarah; Agúndez, M; Cernicharo, J; Velilla Prieto, L; Goicoechea, J R; Quintana-Lacaci, G; Fonfría, J P; Alcolea, J; Bujarrabal, V

2018-03-01

Silicon carbide dust is ubiquitous in circumstellar envelopes around C-rich AGB stars. However, the main gas-phase precursors leading to the formation of SiC dust have not yet been identified. The most obvious candidates among the molecules containing an Si-C bond detected in C-rich AGB stars are SiC 2 , SiC, and Si 2 C. To date, the ring molecule SiC 2 has been observed in a handful of evolved stars, while SiC and Si 2 C have only been detected in the C-star envelope IRC +10216. We aim to study how widespread and abundant SiC 2 , SiC, and Si 2 C are in envelopes around C-rich AGB stars and whether or not these species play an active role as gas-phase precursors of silicon carbide dust in the ejecta of carbon stars. We carried out sensitive observations with the IRAM 30m telescope of a sample of 25 C-rich AGB stars to search for emission lines of SiC 2 , SiC, and Si 2 C in the λ 2 mm band. We performed non-LTE excitation and radiative transfer calculations based on the LVG method to model the observed lines of SiC 2 and to derive SiC 2 fractional abundances in the observed envelopes. We detect SiC 2 in most of the sources, SiC in about half of them, and do not detect Si 2 C in any source, at the exception of IRC +10216. Most of these detections are reported for the first time in this work. We find a positive correlation between the SiC and SiC 2 line emission, which suggests that both species are chemically linked, the SiC radical probably being the photodissociation product of SiC 2 in the external layer of the envelope. We find a clear trend in which the denser the envelope, the less abundant SiC 2 is. The observed trend is interpreted as an evidence of efficient incorporation of SiC 2 onto dust grains, a process which is favored at high densities owing to the higher rate at which collisions between particles take place. The observed behavior of a decline in the SiC 2 abundance with increasing density strongly suggests that SiC 2 is an important gas-phase precursor of SiC dust in envelopes around carbon stars.

Diaphragm-Free Fiber-Optic Fabry-Perot Interferometric Gas Pressure Sensor for High Temperature Application.

PubMed

Liang, Hao; Jia, Pinggang; Liu, Jia; Fang, Guocheng; Li, Zhe; Hong, Yingping; Liang, Ting; Xiong, Jijun

2018-03-28

A diaphragm-free fiber-optic Fabry-Perot (FP) interferometric gas pressure sensor is designed and experimentally verified in this paper. The FP cavity was fabricated by inserting a well-cut fiber Bragg grating (FBG) and hollow silica tube (HST) from both sides into a silica casing. The FP cavity length between the ends of the SMF and HST changes with the gas density. Using temperature decoupling method to improve the accuracy of the pressure sensor in high temperature environments. An experimental system for measuring the pressure under different temperatures was established to verify the performance of the sensor. The pressure sensitivity of the FP gas pressure sensor is 4.28 nm/MPa with a high linear pressure response over the range of 0.1-0.7 MPa, and the temperature sensitivity is 14.8 pm/°C under the range of 20-800 °C. The sensor has less than 1.5% non-linearity at different temperatures by using temperature decoupling method. The simple fabrication and low-cost will help sensor to maintain the excellent features required by pressure measurement in high temperature applications.

EIT-Based Fabric Pressure Sensing

PubMed Central

Yao, A.; Yang, C. L.; Seo, J. K.; Soleimani, M.

2013-01-01

This paper presents EIT-based fabric sensors that aim to provide a pressure mapping using the current carrying and voltage sensing electrodes attached to the boundary of the fabric patch. Pressure-induced shape change over the sensor area makes a change in the conductivity distribution which can be conveyed to the change of boundary current-voltage data. This boundary data is obtained through electrode measurements in EIT system. The corresponding inverse problem is to reconstruct the pressure and deformation map from the relationship between the applied current and the measured voltage on the fabric boundary. Taking advantage of EIT in providing dynamical images of conductivity changes due to pressure induced shape change, the pressure map can be estimated. In this paper, the EIT-based fabric sensor was presented for circular and rectangular sensor geometry. A stretch sensitive fabric was used in circular sensor with 16 electrodes and a pressure sensitive fabric was used in a rectangular sensor with 32 electrodes. A preliminary human test was carried out with the rectangular sensor for foot pressure mapping showing promising results. PMID:23533538

Integrated High Payoff Rocket Propulsion Technology (IHPRPT) SiC Recession Model

NASA Technical Reports Server (NTRS)

Opila, E. J.

2009-01-01

SiC stability and recession rates were modeled in hydrogen/oxygen combustion environments for the Integrated High Payoff Rocket Propulsion Technology (IHPRPT) program. The IHPRPT program is a government and industry program to improve U.S. rocket propulsion systems. Within this program SiC-based ceramic matrix composites are being considered for transpiration cooled injector faceplates or rocket engine thrust chamber liners. Material testing under conditions representative of these environments was conducted at the NASA Glenn Research Center, Cell 22. For the study described herein, SiC degradation was modeled under these Cell 22 test conditions for comparison to actual test results: molar mixture ratio, MR (O2:H2) = 6, material temperatures to 1700 C, combustion gas pressures between 0.34 and 2.10 atm, and gas velocities between 8,000 and 12,000 fps. Recession was calculated assuming rates were controlled by volatility of thermally grown silica limited by gas boundary layer transport. Assumptions for use of this model were explored, including the presence of silica on the SiC surface, laminar gas boundary layer limited volatility, and accuracy of thermochemical data for volatile Si-O-H species. Recession rates were calculated as a function of temperature. It was found that at 1700 C, the highest temperature considered, the calculated recession rates were negligible, about 200 m/h, relative to the expected lifetime of the material. Results compared favorably to testing observations. Other mechanisms contributing to SiC recession are briefly described including consumption of underlying carbon and pitting. A simple expression for liquid flow on the material surface was developed from a one-dimensional treatment of the Navier-Stokes Equation. This relationship is useful to determine under which conditions glassy coatings or thermally grown silica would flow on the material surface, removing protective layers by shear forces. The velocity of liquid flow was found to depend on the gas velocity, the viscosity of gas and liquid, as well as the thickness of the gas boundary layer and the liquid layer. Calculated flow rates of a borosilicate glass coating compared well to flow rates observed for this coating tested on a SiC panel in Cell 22.

Pressure sensor to determine spatial pressure distributions on boundary layer flows

NASA Astrophysics Data System (ADS)

Sciammarella, Cesar A.; Piroozan, Parham; Corke, Thomas C.

1997-03-01

The determination of pressures along the surface of a wind tunnel proves difficult with methods that must introduce devices into the flow stream. This paper presents a sensor that is part of the wall. A special interferometric reflection moire technique is developed and used to produce signals that measures pressure both in static and dynamic settings. The sensor developed is an intelligent sensor that combines optics and electronics to analyze the pressure patterns. The sensor provides the input to a control system that is capable of modifying the shape of the wall and preserve the stability of the flow.

A temperature and pressure controlled calibration system for pressure sensors

NASA Technical Reports Server (NTRS)

Chapman, John J.; Kahng, Seun K.

1989-01-01

A data acquisition and experiment control system capable of simulating temperatures from -184 to +220 C and pressures either absolute or differential from 0 to 344.74 kPa is developed to characterize silicon pressure sensor response to temperature and pressure. System software is described that includes sensor data acquisition, algorithms for numerically derived thermal offset and sensitivity correction, and operation of the environmental chamber and pressure standard. This system is shown to be capable of computer interfaced cryogenic testing to within 1 C and 34.47 Pa of single channel or multiplexed arrays of silicon pressure sensors.

Design, Fabrication, and Implementation of a Wireless, Passive Implantable Pressure Sensor Based on Magnetic Higher-Order Harmonic Fields

PubMed Central

Tan, Ee Lim; DeRouin, Andrew J.; Pereles, Brandon D.; Ong, Keat Ghee

2011-01-01

A passive and wireless sensor was developed for monitoring pressure in vivo. Structurally, the pressure sensor, referred to as the magneto-harmonic pressure sensor, is an airtight chamber sealed with an elastic pressure membrane. A strip of magnetically-soft material is attached to the bottom of the chamber and a permanent magnet strip is embedded inside the membrane. Under the excitation of an externally applied AC magnetic field, the magnetically-soft strip produces a higher-order magnetic signature that can be remotely detected with an external receiving coil. As ambient pressure varies, the pressure membrane deflects, altering the separation distance between the magnetically-soft strip and the permanent magnet. This shifts the higher-order harmonic signal, allowing for detection of pressure change as a function of harmonic shifting. The wireless, passive nature of this sensor technology allows for continuous long-term pressure monitoring, particularly useful for biomedical applications such as monitoring pressure in aneurysm sac and sphincter of Oddi. In addition to demonstrating its pressure sensing capability, an animal model was used to investigate the efficacy and feasibility of the pressure sensor in a biological environment. PMID:25585564

Surface pressure measurement by oxygen quenching of luminescence

NASA Technical Reports Server (NTRS)

Gouterman, Martin P. (Inventor); Kavandi, Janet L. (Inventor); Gallery, Jean (Inventor); Callis, James B. (Inventor)

1993-01-01

Methods and compositions for measuring the pressure of an oxygen-containing gas on an aerodynamic surface, by oxygen-quenching of luminescence of molecular sensors is disclosed. Objects are coated with luminescent films containing a first sensor and at least one of two additional sensors, each of the sensors having luminescences that have different dependencies on temperature and oxygen pressure. Methods and compositions are also provided for improving pressure measurements (qualitative or quantitive) on surfaces coated with a film having one or more types of sensor.

Surface pressure measurement by oxygen quenching of luminescence

NASA Technical Reports Server (NTRS)

Gouterman, Martin P. (Inventor); Kavandi, Janet L. (Inventor); Gallery, Jean (Inventor); Callis, James B. (Inventor)

1994-01-01

Methods and compositions for measuring the pressure of an oxygen-containing gas on an aerodynamic surface, by oxygen-quenching of luminescence of molecular sensors is disclosed. Objects are coated with luminescent films containing a first sensor and at least one of two additional sensors, each of the sensors having luminescences that have different dependencies on temperature and oxygen pressure. Methods and compositions are also provided for improving pressure measurements (qualitative or quantitive) on surfaces coated with a film having one or more types of sensor.

Combined application of FBG and PZT sensors for plantar pressure monitoring at low and high speed walking.

PubMed

Suresh, R; Bhalla, S; Singh, C; Kaur, N; Hao, J; Anand, S

2015-01-01

Clinical monitoring of planar pressure is vital in several pathological conditions, such as diabetes, where excess pressure might have serious repercussions on health of the patient, even to the extent of amputation. The main objective of this paper is to experimentally evaluate the combined application of the Fibre Bragg Grating (FBG) and the lead zirconate titanate (PZT) piezoceramic sensors for plantar pressure monitoring during walk at low and high speeds. For fabrication of the pressure sensors, the FBGs are embedded within layers of carbon composite material and stacked in an arc shape. From this embedding technique, average pressure sensitivity of 1.3 pm/kPa and resolution of nearly 0.8 kPa is obtained. These sensors are found to be suitable for measuring the static and the low-speed walk generated foot pressure. Simultaneously, PZT patches of size 10 × 10 × 0.3 mm were used as sensors, utilizing the d_{33} (thickness) coupling mode. A sensitivity of 7.06 mV/kPa and a pressure resolution of 0.14 kPa is obtained from these sensors, which are found to be suitable for foot pressure measurement during high speed walking and running. Both types of sensors are attached to the underside of the sole of commercially available shoes. In the experiments, a healthy male subject walks/runs over the treadmill wearing the fabricated shoes at various speeds and the peak pressure is measured using both the sensors. Commercially available low-cost hardware is used for interrogation of the two sensor types. The test results clearly show the feasibility of the FBG and the PZT sensors for measurement of plantar pressure. The PZT sensors are more accurate for measurement of pressure during walking at high speeds. The FBG sensors, on the other hand, are found to be suitable for static and quasi-dynamic (slow walking) conditions. Typically, the measured pressure varied from 400 to 600 kPa below the forefoot and 100 to 1000 kPa below the heel as the walking speed varied from 1 kilometer per hour (kmph) to 7 kmph. When instrumented in combination, the two sensors can enable measurements ranging from static to high speed conditions Both the sensor types are rugged, small sized and can be easily embedded in commercial shoes and enable plantar pressure measurement in a cost-effective manner. This research is expected to have application in the treatment of patients suffering from diabetes and gonarthrosis.

Stress Analysis of Silicon Carbide Microelectromechanical Systems Using Raman Spectroscopy

DTIC Science & Technology

2003-03-01

conformally coated with SiC[2]...........................4 2.1: Silicon carbide grinding stones or “carborundum” [1...open up contact areas to SiC-2 (mask SiC2_SiC3_VIA). Then, a 1.5 µm- thick SiC “cap” layer (SiC-3) is deposited. Note that the SiC-3 conformally coats ...84 5.2: Surface profile across the teeth of a SiC3 comb drive...........................................85 xi

Volatile Reaction Products From Silicon-Based Ceramics in Combustion Environments Identified

NASA Technical Reports Server (NTRS)

Opila, Elizabeth J.

1997-01-01

Silicon-based ceramics and composites are prime candidates for use as components in the hot sections of advanced aircraft engines. These materials must have long-term durability in the combustion environment. Because water vapor is always present as a major product of combustion in the engine environment, its effect on the durability of silicon-based ceramics must be understood. In combustion environments, silicon-based ceramics react with water vapor to form a surface silica (SiO2) scale. This SiO2 scale, in turn, has been found to react with water vapor to form volatile hydroxides. Studies to date have focused on how water vapor reacts with high-purity silicon carbide (SiC) and SiO2 in model combustion environments. Because the combustion environment in advanced aircraft engines is expected to contain about 10-percent water vapor at 10-atm total pressure, the durability of SiC and SiO2 in gas mixtures containing 0.1- to 1-atm water vapor is of interest. The reactions of SiC and SiO2 with water vapor were monitored by measuring weight changes of sample coupons in a 0.5-atm water vapor/0.5-atm oxygen gas mixture with thermogravimetric analysis.

Embedding piezoresistive pressure sensors to obtain online pressure profiles inside fiber composite laminates.

PubMed

Moghaddam, Maryam Kahali; Breede, Arne; Brauner, Christian; Lang, Walter

2015-03-27

The production of large and complex parts using fiber composite materials is costly due to the frequent formation of voids, porosity and waste products. By embedding different types of sensors and monitoring the process in real time, the amount of wastage can be significantly reduced. This work focuses on developing a knowledge-based method to improve and ensure complete impregnation of the fibers before initiation of the resin cure. Piezoresistive and capacitive pressure sensors were embedded in fiber composite laminates to measure the real-time the pressure values inside the laminate. A change of pressure indicates resin infusion. The sensors were placed in the laminate and the resin was infused by vacuum. The embedded piezoresistive pressure sensors were able to track the vacuum pressure in the fiber composite laminate setup, as well as the arrival of the resin at the sensor. The pressure increase due to closing the resin inlet was also measured. In contrast, the capacitive type of sensor was found to be inappropriate for measuring these quantities. The following study demonstrates real-time monitoring of pressure changes inside the fiber composite laminate, which validate the use of Darcy's law in porous media to control the resin flow during infusion.

Contact stress sensor

DOEpatents

Kotovsky, Jack

2014-02-11

A method for producing a contact stress sensor that includes one or more MEMS fabricated sensor elements, where each sensor element of includes a thin non-recessed portion, a recessed portion and a pressure sensitive element adjacent to the recessed portion. An electric circuit is connected to the pressure sensitive element. The circuit includes a pressure signal circuit element configured to provide a signal upon movement of the pressure sensitive element.

Contact stress sensor

DOEpatents

Kotovsky, Jack [Oakland, CA

2012-02-07

A contact stress sensor includes one or more MEMS fabricated sensor elements, where each sensor element of includes a thin non-recessed portion, a recessed portion and a pressure sensitive element adjacent to the recessed portion. An electric circuit is connected to the pressure sensitive element. The circuit includes a thermal compensator and a pressure signal circuit element configured to provide a signal upon movement of the pressure sensitive element.

The Abundance of SiC2 in Carbon Star Envelopes⋆: Evidence that SiC2 is a gas-phase precursor of SiC dust

PubMed Central

Massalkhi, Sarah; Agúndez, M.; Cernicharo, J.; Velilla Prieto, L.; Goicoechea, J. R.; Quintana-Lacaci, G.; Fonfría, J. P.; Alcolea, J.; Bujarrabal, V.

2017-01-01

Context Silicon carbide dust is ubiquitous in circumstellar envelopes around C-rich AGB stars. However, the main gas-phase precursors leading to the formation of SiC dust have not yet been identified. The most obvious candidates among the molecules containing an Si–C bond detected in C-rich AGB stars are SiC2, SiC, and Si2C. To date, the ring molecule SiC2 has been observed in a handful of evolved stars, while SiC and Si2C have only been detected in the C-star envelope IRC +10216. Aims We aim to study how widespread and abundant SiC2, SiC, and Si2C are in envelopes around C-rich AGB stars and whether or not these species play an active role as gas-phase precursors of silicon carbide dust in the ejecta of carbon stars. Methods We carried out sensitive observations with the IRAM 30m telescope of a sample of 25 C-rich AGB stars to search for emission lines of SiC2, SiC, and Si2C in the λ 2 mm band. We performed non-LTE excitation and radiative transfer calculations based on the LVG method to model the observed lines of SiC2 and to derive SiC2 fractional abundances in the observed envelopes. Results We detect SiC2 in most of the sources, SiC in about half of them, and do not detect Si2C in any source, at the exception of IRC +10216. Most of these detections are reported for the first time in this work. We find a positive correlation between the SiC and SiC2 line emission, which suggests that both species are chemically linked, the SiC radical probably being the photodissociation product of SiC2 in the external layer of the envelope. We find a clear trend in which the denser the envelope, the less abundant SiC2 is. The observed trend is interpreted as an evidence of efficient incorporation of SiC2 onto dust grains, a process which is favored at high densities owing to the higher rate at which collisions between particles take place. Conclusions The observed behavior of a decline in the SiC2 abundance with increasing density strongly suggests that SiC2 is an important gas-phase precursor of SiC dust in envelopes around carbon stars. PMID:29628518

Effect of SiC particle size on the microstructure and properties of cold-sprayed Al/SiCp composite coating

NASA Astrophysics Data System (ADS)

Yu, Min; Hua, Junwei

2017-07-01

The Al5056/SiC composite coatings were prepared by cold spraying. Experimental results show that the SiC content in the composite coating deposited with the SiC powder having an average size of 67 μm (Al5056/SiC-67) is similar to that deposited with the SiC powder having an average size of 27 μm (Al5056/SiC-27). The microhardness and cohesion strength of Al5056/SiC-67 coating are higher than those of the Al5056/SiC-27 coating. In addition, the Al5056/SiC-67 coating having a superior wear resistance because of the coarse SiC powder with a superior kinetic energy contributes to the deformation resistance of the matrix Al5056 particles.

Peristaltic pump-based low range pressure sensor calibration system

NASA Astrophysics Data System (ADS)

Vinayakumar, K. B.; Naveen Kumar, G.; Nayak, M. M.; Dinesh, N. S.; Rajanna, K.

2015-11-01

Peristaltic pumps were normally used to pump liquids in several chemical and biological applications. In the present study, a peristaltic pump was used to pressurize the chamber (positive as well negative pressures) using atmospheric air. In the present paper, we discuss the development and performance study of an automatic pressurization system to calibrate low range (millibar) pressure sensors. The system includes a peristaltic pump, calibrated pressure sensor (master sensor), pressure chamber, and the control electronics. An in-house developed peristaltic pump was used to pressurize the chamber. A closed loop control system has been developed to detect and adjust the pressure leaks in the chamber. The complete system has been integrated into a portable product. The system performance has been studied for a step response and steady state errors. The system is portable, free from oil contaminants, and consumes less power compared to existing pressure calibration systems. The veracity of the system was verified by calibrating an unknown diaphragm based pressure sensor and the results obtained were satisfactory.

Carbon nanotube temperature and pressure sensors

DOEpatents

Ivanov, Ilia N.; Geohegan, David B.

2016-11-15

The present invention, in one embodiment, provides a method of measuring pressure or temperature using a sensor including a sensor element composed of a plurality of carbon nanotubes. In one example, the resistance of the plurality of carbon nanotubes is measured in response to the application of temperature or pressure. The changes in resistance are then recorded and correlated to temperature or pressure. In one embodiment, the present invention provides for independent measurement of pressure or temperature using the sensors disclosed herein.

Carbon nanotube temperature and pressure sensors

DOEpatents

Ivanov, Ilia N.; Geohegan, David B.

2016-12-13

The present invention, in one embodiment, provides a method of measuring pressure or temperature using a sensor including a sensor element composed of a plurality of carbon nanotubes. In one example, the resistance of the plurality of carbon nanotubes is measured in response to the application of temperature or pressure. The changes in resistance are then recorded and correlated to temperature or pressure. In one embodiment, the present invention provides for independent measurement of pressure or temperature using the sensors disclosed herein.

Carbon nanotube temperature and pressure sensors

DOEpatents

Ivanov, Ilia N; Geohegan, David Bruce

2013-10-29

The present invention, in one embodiment, provides a method of measuring pressure or temperature using a sensor including a sensor element composed of a plurality of carbon nanotubes. In one example, the resistance of the plurality of carbon nanotubes is measured in response to the application of temperature or pressure. The changes in resistance are then recorded and correlated to temperature or pressure. In one embodiment, the present invention provides for independent measurement of pressure or temperature using the sensors disclosed herein.

Carbon nanotube temperature and pressure sensors

DOEpatents

Ivanov, Ilia N.; Geohegan, David B.

2016-10-25

The present invention, in one embodiment, provides a method of measuring pressure or temperature using a sensor including a sensor element composed of a plurality of carbon nanotubes. In one example, the resistance of the plurality of carbon nanotubes is measured in response to the application of temperature or pressure. The changes in resistance are then recorded and correlated to temperature or pressure. In one embodiment, the present invention provides for independent measurement of pressure or temperature using the sensors disclosed herein.

Carbon nanotube temperature and pressure sensors

DOEpatents

Ivanov, Ilia N.; Geohegan, David B.

2017-09-12

The present invention, in one embodiment, provides a method of measuring pressure or temperature using a sensor including a sensor element composed of a plurality of carbon nanotubes. In one example, the resistance of the plurality of carbon nanotubes is measured in response to the application of temperature or pressure. The changes in resistance are then recorded and correlated to temperature or pressure. In one embodiment, the present invention provides for independent measurement of pressure or temperature using the sensors disclosed herein.

A dual-phase microstructural approach to damage and fracture of Ti3SiC2/SiC joints

NASA Astrophysics Data System (ADS)

Nguyen, Ba Nghiep; Henager, Charles H.; Kurtz, Richard J.

2018-02-01

The microcracking mechanisms responsible for Ti3SiC2/SiC joint damage observed at the macroscopic scale after neutron irradiation experiments are investigated in detail. A dual-phase microstructural approach to damage and fracture of Ti3SiC2/SiC joints is developed that uses a finely discretized two-phase domain based on a digital image of an actual microstructure involving embedded Ti3SiC2 and SiC phases. The behaviors of SiC and Ti3SiC2 in the domain are described by the continuum damage mechanics (CDM) model reported in Nguyen et al., J. Nucl. Mater., 2017, 495:504-515. This CDM model describes microcracking damage in brittle ceramics caused by thermomechanical loading and irradiation-induced swelling. The dual-phase microstructural model is applied to predict the microcracking mechanisms occurring in a typical Ti3SiC2/SiC joint subjected to heating to 800 °C followed by irradiation-induced swelling at this temperature and cooling to room temperature after the applied swelling has reached the maximum swelling levels observed in the experiments for SiC and Ti3SiC2. The model predicts minor damage of the joint after heating but significant microcracking in the SiC phase and along the boundaries between SiC and Ti3SiC2 as well as along the bonding joint during irradiation-induced swelling and cooling to room temperature. These predictions qualitatively agree with the limited experimental observations of joint damage at this irradiation temperature.

On the Interior of Carbon-Rich Exoplanets: New Insight from Si-C System at Ultra High Pressure

NASA Astrophysics Data System (ADS)

Miozzi Ferrini, F.; Morard, G.; Antonangeli, D.; Clark, A. N.; Edmund, E.; Fiquet, G.; Mezouar, M.

2017-12-01

The variability in the mass/radius ratio of the more than 3200 exoplanets discovered so far, is a direct consequence of the large diversity of their internal composition. Exoplanets with a mass between 1 and 10 times the mass of the Earth are typically referred to as super-Earths, and their mineralogical composition depends on that of the protoplanetary disk. The key variable in determining the chemical makeup of such planets is the C/O ratio. Values of C/O ratio smaller than 0.8 correspond to an interior dominated by silicates (e.g. terrestrial planets), whereas for C/O ratios > 0.8 the interior is enriched in carbon. In these C-rich planets, Si may form carbides instead of silicates (Duffy et al., 2015). The detection of planet 55 Cancri e, with a particularly high C/O ratio, has increased the interest in carbon-rich planets. 55 Cancri e has been modelled as a layered structure made by different assemblages of carbon, silicon and iron (Madhusudan et al., 2012). However, the accuracy of such type of models suffers the lack of experimental data on the Si - C system at extreme conditions of pressure and temperature. Experimental equations of state are limited to 80 GPa (Nisr et al., 2017) and little is known about subsolidus relation, with only one theoretical study from Wilson and Militzer (2004) at multi-megabar pressures. Here we present experiments on SiC samples by synchrotron X-ray diffraction, in laser heated diamond anvil cell between 30-200 GPa and 300-3500 K. The results show evidences of coexistence of SiC with Si or C, without the appearance of intermediate compounds. Moreover, between 60 and 75 GPa, SiC undergoes a phase transition from the zinc blend structure (B3), to the rock salt structure (B1). This phase transition, also reported in previous literature work (e.g. Daviau and Lee, 2017), corresponds to a change in the atoms coordination, and is accompanied by an important volume reduction. Acknowledgements: This work was supported by the ERC PlanetDive advanced grant 670787. ReferencesDuffy T. 2015. Mineralogy of Super-Earth Planets. Treatise on Geophysics. Volume 2. Elsevier Daviau K. & Lee K.K.M. 2017. Physical Review B, 95(13), 134108 Madhusudhan N. et al., 2012. Astrophys. J. 759, L40. Nisr C. et al., 2017. J. Geophys. Res. Planets., 122, 124-133. Wilson H.F. & Militzer B. 2004. Astrophys. J. 793, 34.

Graphene Squeeze-Film Pressure Sensors.

PubMed

Dolleman, Robin J; Davidovikj, Dejan; Cartamil-Bueno, Santiago J; van der Zant, Herre S J; Steeneken, Peter G

2016-01-13

The operating principle of squeeze-film pressure sensors is based on the pressure dependence of a membrane's resonance frequency, caused by the compression of the surrounding gas which changes the resonator stiffness. To realize such sensors, not only strong and flexible membranes are required, but also minimization of the membrane's mass is essential to maximize responsivity. Here, we demonstrate the use of a few-layer graphene membrane as a squeeze-film pressure sensor. A clear pressure dependence of the membrane's resonant frequency is observed, with a frequency shift of 4 MHz between 8 and 1000 mbar. The sensor shows a reproducible response and no hysteresis. The measured responsivity of the device is 9000 Hz/mbar, which is a factor 45 higher than state-of-the-art MEMS-based squeeze-film pressure sensors while using a 25 times smaller membrane area.

Epidermis Microstructure Inspired Graphene Pressure Sensor with Random Distributed Spinosum for High Sensitivity and Large Linearity.

PubMed

Pang, Yu; Zhang, Kunning; Yang, Zhen; Jiang, Song; Ju, Zhenyi; Li, Yuxing; Wang, Xuefeng; Wang, Danyang; Jian, Muqiang; Zhang, Yingying; Liang, Renrong; Tian, He; Yang, Yi; Ren, Tian-Ling

2018-03-27

Recently, wearable pressure sensors have attracted tremendous attention because of their potential applications in monitoring physiological signals for human healthcare. Sensitivity and linearity are the two most essential parameters for pressure sensors. Although various designed micro/nanostructure morphologies have been introduced, the trade-off between sensitivity and linearity has not been well balanced. Human skin, which contains force receptors in a reticular layer, has a high sensitivity even for large external stimuli. Herein, inspired by the skin epidermis with high-performance force sensing, we have proposed a special surface morphology with spinosum microstructure of random distribution via the combination of an abrasive paper template and reduced graphene oxide. The sensitivity of the graphene pressure sensor with random distribution spinosum (RDS) microstructure is as high as 25.1 kPa -1 in a wide linearity range of 0-2.6 kPa. Our pressure sensor exhibits superior comprehensive properties compared with previous surface-modified pressure sensors. According to simulation and mechanism analyses, the spinosum microstructure and random distribution contribute to the high sensitivity and large linearity range, respectively. In addition, the pressure sensor shows promising potential in detecting human physiological signals, such as heartbeat, respiration, phonation, and human motions of a pushup, arm bending, and walking. The wearable pressure sensor array was further used to detect gait states of supination, neutral, and pronation. The RDS microstructure provides an alternative strategy to improve the performance of pressure sensors and extend their potential applications in monitoring human activities.

Distributed Autonomous Control Action Based on Sensor and Mission Fusion

DTIC Science & Technology

2005-09-01

programmable control algorithm driven by the readings of two pressure switch sensors located on either side of the valve unit. Thus, a micro-controller...and Characterization The process of leak detection and characterization must be accomplished with a set of pressure switch sensors. This sensor...economically supplementing existing widely used pressure switch type sensors which are characterized by prohibitively long inertial lag responses

An Universal packaging technique for low-drift implantable pressure sensors.

PubMed

Kim, Albert; Powell, Charles R; Ziaie, Babak

2016-04-01

Monitoring bodily pressures provide valuable diagnostic and prognostic information. In particular, long-term measurement through implantable sensors is highly desirable in situations where percutaneous access can be complicated or dangerous (e.g., intracranial pressure in hydrocephalic patients). In spite of decades of progress in the fabrication of miniature solid-state pressure sensors, sensor drift has so far severely limited their application in implantable systems. In this paper, we report on a universal packaging technique for reducing the sensor drift. The described method isolates the pressure sensor from a major source of drift, i.e., contact with the aqueous surrounding environment, by encasing the sensor in a silicone-filled medical-grade polyurethane balloon. In-vitro soak tests for 100 days using commercial micromachined piezoresistive pressure sensors demonstrate a stable operation with the output remaining within 1.8 cmH2O (1.3 mmHg) of a reference pressure transducer. Under similar test conditions, a non-isolated sensor fluctuates between 10 and 20 cmH2O (7.4-14.7 mmHg) of the reference, without ever settling to a stable operation regime. Implantation in Ossabow pigs demonstrate the robustness of the package and its in-vivo efficacy in reducing the baseline drift.

Fabrication of amorphous InGaZnO thin-film transistor-driven flexible thermal and pressure sensors

NASA Astrophysics Data System (ADS)

Park, Ick-Joon; Jeong, Chan-Yong; Cho, In-Tak; Lee, Jong-Ho; Cho, Eou-Sik; Kwon, Sang Jik; Kim, Bosul; Cheong, Woo-Seok; Song, Sang-Hun; Kwon, Hyuck-In

2012-10-01

In this work, we present the results concerning the use of amorphous indium-gallium-zinc-oxide (a-IGZO) thin-film transistor (TFT) as a driving transistor of the flexible thermal and pressure sensors which are applicable to artificial skin systems. Although the a-IGZO TFT has been attracting much attention as a driving transistor of the next-generation flat panel displays, no study has been performed about the application of this new device to the driving transistor of the flexible sensors yet. The proposed thermal sensor pixel is composed of the series-connected a-IGZO TFT and ZnO-based thermistor fabricated on a polished metal foil, and the ZnO-based thermistor is replaced by the pressure sensitive rubber in the pressure sensor pixel. In both sensor pixels, the a-IGZO TFT acts as the driving transistor and the temperature/pressure-dependent resistance of the ZnO-based thermistor/pressure-sensitive rubber mainly determines the magnitude of the output currents. The fabricated a-IGZO TFT-driven flexible thermal sensor shows around a seven times increase in the output current as the temperature increases from 20 °C to 100 °C, and the a-IGZO TFT-driven flexible pressure sensors also exhibit high sensitivity under various pressure environments.

Abundance of SiC2 in carbon star envelopes

NASA Astrophysics Data System (ADS)

Massalkhi, S.; Agúndez, M.; Cernicharo, J.; Velilla Prieto, L.; Goicoechea, J. R.; Quintana-Lacaci, G.; Fonfría, J. P.; Alcolea, J.; Bujarrabal, V.

2018-03-01

Context. Silicon carbide dust is ubiquitous in circumstellar envelopes around C-rich asymptotic giant branch (AGB) stars. However, the main gas-phase precursors leading to the formation of SiC dust have not yet been identified. The most obvious candidates among the molecules containing an Si-C bond detected in C-rich AGB stars are SiC2, SiC, and Si2C. To date, the ring molecule SiC2 has been observed in a handful of evolved stars, while SiC and Si2C have only been detected in the C-star envelope IRC +10216. Aim. We aim to study how widespread and abundant SiC2, SiC, and Si2C are in envelopes around C-rich AGB stars, and whether or not these species play an active role as gas-phase precursors of silicon carbide dust in the ejecta of carbon stars. Methods: We carried out sensitive observations with the IRAM 30 m telescope of a sample of 25 C-rich AGB stars to search for emission lines of SiC2, SiC, and Si2C in the λ 2 mm band. We performed non-LTE excitation and radiative transfer calculations based on the LVG method to model the observed lines of SiC2 and to derive SiC2 fractional abundances in the observed envelopes. Results: We detect SiC2 in most of the sources, SiC in about half of them, and do not detect Si2C in any source except IRC +10216. Most of these detections are reported for the first time in this work. We find a positive correlation between the SiC and SiC2 line emission, which suggests that both species are chemically linked; the SiC radical is probably the photodissociation product of SiC2 in the external layer of the envelope. We find a clear trend where the denser the envelope, the less abundant SiC2 is. The observed trend is interpreted as evidence of efficient incorporation of SiC2 onto dust grains, a process that is favored at high densities owing to the higher rate at which collisions between particles take place. Conclusions: The observed behavior of a decline in the SiC2 abundance with increasing density strongly suggests that SiC2 is an important gas-phase precursor of SiC dust in envelopes around carbon stars. Based on observations carried out with the IRAM 30 m Telescope. IRAM is supported by INSU/CNRS (France), MPG (Germany), and IGN (Spain).

Reconstruction of an acoustic pressure field in a resonance tube by particle image velocimetry.

PubMed

Kuzuu, K; Hasegawa, S

2015-11-01

A technique for estimating an acoustic field in a resonance tube is suggested. The estimation of an acoustic field in a resonance tube is important for the development of the thermoacoustic engine, and can be conducted employing two sensors to measure pressure. While this measurement technique is known as the two-sensor method, care needs to be taken with the location of pressure sensors when conducting pressure measurements. In the present study, particle image velocimetry (PIV) is employed instead of a pressure measurement by a sensor, and two-dimensional velocity vector images are extracted as sequential data from only a one- time recording made by a video camera of PIV. The spatial velocity amplitude is obtained from those images, and a pressure distribution is calculated from velocity amplitudes at two points by extending the equations derived for the two-sensor method. By means of this method, problems relating to the locations and calibrations of multiple pressure sensors are avoided. Furthermore, to verify the accuracy of the present method, the experiments are conducted employing the conventional two-sensor method and laser Doppler velocimetry (LDV). Then, results by the proposed method are compared with those obtained with the two-sensor method and LDV.

40 CFR 1065.215 - Pressure transducers, temperature sensors, and dewpoint sensors.

Code of Federal Regulations, 2010 CFR

2010-07-01

... sensors, and dewpoint sensors. 1065.215 Section 1065.215 Protection of Environment ENVIRONMENTAL... Measurement of Engine Parameters and Ambient Conditions § 1065.215 Pressure transducers, temperature sensors, and dewpoint sensors. (a) Application. Use instruments as specified in this section to measure...

An ultra-fast fiber optic pressure sensor for blast event measurements

NASA Astrophysics Data System (ADS)

Wu, Nan; Zou, Xiaotian; Tian, Ye; Fitek, John; Maffeo, Michael; Niezrecki, Christopher; Chen, Julie; Wang, Xingwei

2012-05-01

Soldiers who are exposed to explosions are at risk of suffering traumatic brain injury (TBI). Since the causal relationship between a blast and TBI is poorly understood, it is critical to have sensors that can accurately quantify the blast dynamics and resulting wave propagation through a helmet and skull that are imparted onto and inside the brain. To help quantify the cause of TBI, it is important to record transient pressure data during a blast event. However, very few sensors feature the capabilities of tracking the dynamic pressure transients due to the rapid change of the pressure during blast events, while not interfering with the physical material layers or wave propagation. In order to measure the pressure transients efficiently, a pressure sensor should have a high resonant frequency and a high spatial resolution. This paper describes an ultra-fast fiber optic pressure sensor based on the Fabry-Perot principle for the application of measuring the rapid pressure changes in a blast event. A shock tube experiment performed in US Army Natick Soldier Research, Development and Engineering Center has demonstrated that the resonant frequency of the sensor is 4.12 MHz, which is relatively close to the designed theoretical value of 4.113 MHz. Moreover, the experiment illustrated that the sensor has a rise time of 120 ns, which demonstrates that the sensor is capable of observing the dynamics of the pressure transient during a blast event.

Capacitance pressure sensor

DOEpatents

Eaton, William P.; Staple, Bevan D.; Smith, James H.

2000-01-01

A microelectromechanical (MEM) capacitance pressure sensor integrated with electronic circuitry on a common substrate and a method for forming such a device are disclosed. The MEM capacitance pressure sensor includes a capacitance pressure sensor formed at least partially in a cavity etched below the surface of a silicon substrate and adjacent circuitry (CMOS, BiCMOS, or bipolar circuitry) formed on the substrate. By forming the capacitance pressure sensor in the cavity, the substrate can be planarized (e.g. by chemical-mechanical polishing) so that a standard set of integrated circuit processing steps can be used to form the electronic circuitry (e.g. using an aluminum or aluminum-alloy interconnect metallization).

40 CFR 63.1452 - What are my monitoring requirements?

Code of Federal Regulations, 2011 CFR

2011-07-01

... a flow sensor calibration check at least semiannually. (3) If a pressure measurement device is used...) through (v) of this section. (i) Locate the pressure sensor(s) in or as close to a position that provides a representative measurement of the pressure. (ii) Minimize or eliminate pulsating pressure...

The use of combined thermal/pressure polyvinylidene fluoride film airflow sensor in polysomnography.

PubMed

Kryger, Meir; Eiken, Todd; Qin, Li

2013-12-01

The technologies recommended by the American Academy of Sleep Medicine (AASM) to monitor airflow in polysomnography (PSG) include the simultaneous monitoring of two physical variables: air temperature (for thermal airflow) and air pressure (for nasal pressure). To comply with airflow monitoring standards in the sleep lab setting thus often requires the patient to wear two sensors under the nose during testing. We hypothesized that a single combined thermal/pressure sensor using polyvinylidene fluoride (PVDF) film responsive to both airflow temperature and pressure would be effective in documenting abnormal breathing events during sleep. Sixty patients undergoing routine PSG testing to rule out obstructive sleep apnea at two different sleep laboratories were asked to wear a third PVDF airflow sensor in addition to the traditional thermal sensor and pressure sensor. Apnea and hypopnea events were scored by the sleep lab technologists using the AASM guidelines (CMS option) using the thermal sensor for apnea and the pressure sensor for hypopnea (scorer 1). The digital PSG data were also forwarded to an outside registered polysomnographic technologist for scoring of respiratory events detected in the PVDF airflow channels (scorer 2). The Pearson correlation coefficient, r, between apnea and hypopnea indices obtained using the AASM sensors and the combined PVDF sensor was almost unity for the four calculated indices: apnea-hypopnea index (0.990), obstructive apnea index (0.992), hypopnea index (0.958), and central apnea index (1.0). The slope of the four relationships was virtually unity and the coefficient of determination (r (2)) was also close to 1. The results of intraclass correlation coefficients (>0.95) and Bland-Altman plots also provide excellent agreement between the combined PVDF sensor and the AASM sensors. The indices used to calculate apnea severity obtained with the combined PVDF thermal and pressure sensor were equivalent to those obtained using AASM-recommended sensors.

Peristaltic pump-based low range pressure sensor calibration system

DOE Office of Scientific and Technical Information (OSTI.GOV)

Vinayakumar, K. B.; Department of Electronic Systems Engineering, Indian Institute of Science, Bangalore 5600012; Naveen Kumar, G.

2015-11-15

Peristaltic pumps were normally used to pump liquids in several chemical and biological applications. In the present study, a peristaltic pump was used to pressurize the chamber (positive as well negative pressures) using atmospheric air. In the present paper, we discuss the development and performance study of an automatic pressurization system to calibrate low range (millibar) pressure sensors. The system includes a peristaltic pump, calibrated pressure sensor (master sensor), pressure chamber, and the control electronics. An in-house developed peristaltic pump was used to pressurize the chamber. A closed loop control system has been developed to detect and adjust the pressuremore » leaks in the chamber. The complete system has been integrated into a portable product. The system performance has been studied for a step response and steady state errors. The system is portable, free from oil contaminants, and consumes less power compared to existing pressure calibration systems. The veracity of the system was verified by calibrating an unknown diaphragm based pressure sensor and the results obtained were satisfactory.« less

An acousto-optic sensor based on resonance grating waveguide structure

PubMed Central

Xie, Antonio Jou; Song, Fuchuan; Seo, Sang-Woo

2014-01-01

This paper presents an acousto-optic (AO) sensor based on resonance grating waveguide structure. The sensor is fabricated using elastic polymer materials to achieve a good sensitivity to ultrasound pressure waves. Ultrasound pressure waves modify the structural parameters of the sensor and result in the optical resonance shift of the sensor. This converts into a light intensity modulation. A commercial ultrasound transducer at 20 MHz is used to characterize a fabricated sensor and detection sensitivity at different optical source wavelength within a resonance spectrum is investigated. Practical use of the sensor at a fixed optical source wavelength is presented. Ultimately, the geometry of the planar sensor structure is suitable for two-dimensional, optical pressure imaging applications such as pressure wave detection and mapping, and ultrasound imaging. PMID:25045203

A dual-phase microstructural approach to damage and fracture of Ti 3SiC 2/SiC joints

DOE Office of Scientific and Technical Information (OSTI.GOV)

Nguyen, Ba Nghiep; Henager, Charles H.; Kurtz, Richard J.

We investigate the microcracking mechanisms responsible for Ti 3SiC 2/SiC joint damage observed at the macroscopic scale after neutron irradiation experiments in detail. A dual-phase microstructural approach to damage and fracture of Ti 3SiC 2/SiC joints is developed that uses a finely discretized two-phase domain based on a digital image of an actual microstructure involving embedded Ti 3SiC 2 and SiC phases. The behaviors of SiC and Ti 3SiC 2 in the domain are described by the continuum damage mechanics (CDM) model reported in Nguyen et al., J. Nucl. Mater., 2017, 495:504–515. This CDM model describes microcracking damage in brittlemore » ceramics caused by thermomechanical loading and irradiation-induced swelling. The dual-phase microstructural model is applied to predict the microcracking mechanisms occurring in a typical Ti 3SiC 2/SiC joint subjected to heating to 800 °C followed by irradiation-induced swelling at this temperature and cooling to room temperature after the applied swelling has reached the maximum swelling levels observed in the experiments for SiC and Ti 3SiC 2. The model predicts minor damage of the joint after heating but significant microcracking in the SiC phase and along the boundaries between SiC and Ti 3SiC 2 as well as along the bonding joint during irradiation-induced swelling and cooling to room temperature. Our predictions qualitatively agree with the limited experimental observations of joint damage at this irradiation temperature.« less

A dual-phase microstructural approach to damage and fracture of Ti 3SiC 2/SiC joints

DOE PAGES

Nguyen, Ba Nghiep; Henager, Charles H.; Kurtz, Richard J.

2017-12-05

We investigate the microcracking mechanisms responsible for Ti 3SiC 2/SiC joint damage observed at the macroscopic scale after neutron irradiation experiments in detail. A dual-phase microstructural approach to damage and fracture of Ti 3SiC 2/SiC joints is developed that uses a finely discretized two-phase domain based on a digital image of an actual microstructure involving embedded Ti 3SiC 2 and SiC phases. The behaviors of SiC and Ti 3SiC 2 in the domain are described by the continuum damage mechanics (CDM) model reported in Nguyen et al., J. Nucl. Mater., 2017, 495:504–515. This CDM model describes microcracking damage in brittlemore » ceramics caused by thermomechanical loading and irradiation-induced swelling. The dual-phase microstructural model is applied to predict the microcracking mechanisms occurring in a typical Ti 3SiC 2/SiC joint subjected to heating to 800 °C followed by irradiation-induced swelling at this temperature and cooling to room temperature after the applied swelling has reached the maximum swelling levels observed in the experiments for SiC and Ti 3SiC 2. The model predicts minor damage of the joint after heating but significant microcracking in the SiC phase and along the boundaries between SiC and Ti 3SiC 2 as well as along the bonding joint during irradiation-induced swelling and cooling to room temperature. Our predictions qualitatively agree with the limited experimental observations of joint damage at this irradiation temperature.« less

Matrix density effects on the mechanical properties of SiC fiber-reinforced silicon nitride matrix properties

NASA Technical Reports Server (NTRS)

Bhatt, Ramakrishna T.; Kiser, Lames D.

1990-01-01

The room temperature mechanical properties were measured for SiC fiber reinforced reaction-bonded silicon nitride composites (SiC/RBSN) of different densities. The composites consisted of approx. 30 vol percent uniaxially aligned 142 micron diameter SiC fibers (Textron SCS-6) in a reaction-bonded Si3N4 matrix. The composite density was varied by changing the consolidation pressure during RBSN processing and by hot isostatically pressing the SiC/RBSN composites. Results indicate that as the consolidation pressure was increased from 27 to 138 MPa, the average pore size of the nitrided composites decreased from 0.04 to 0.02 microns and the composite density increased from 2.07 to 2.45 gm/cc. Nonetheless, these improvements resulted in only small increases in the first matrix cracking stress, primary elastic modulus, and ultimate tensile strength values of the composites. In contrast, HIP consolidation of SiC/RBSN resulted in a fully dense material whose first matrix cracking stress and elastic modulus were approx. 15 and 50 percent higher, respectively, and ultimate tensile strength values were approx. 40 percent lower than those for unHIPed SiC/RBSN composites. The modulus behavior for all specimens can be explained by simple rule-of-mixture theory. Also, the loss in ultimate strength for the HIPed composites appears to be related to a degradation in fiber strength at the HIP temperature. However, the density effect on matrix fracture strength was much less than would be expected based on typical monolithic Si3N4 behavior, suggesting that composite theory is indeed operating. Possible practical implications of these observations are discussed.

Characterizing the Chemical Stability of High Temperature Materials for Application in Extreme Environments

NASA Technical Reports Server (NTRS)

Opila, Elizabeth

2005-01-01

The chemical stability of high temperature materials must be known for use in the extreme environments of combustion applications. The characterization techniques available at NASA Glenn Research Center vary from fundamental thermodynamic property determination to material durability testing in actual engine environments. In this paper some of the unique techniques and facilities available at NASA Glenn will be reviewed. Multiple cell Knudsen effusion mass spectrometry is used to determine thermodynamic data by sampling gas species formed by reaction or equilibration in a Knudsen cell held in a vacuum. The transpiration technique can also be used to determine thermodynamic data of volatile species but at atmospheric pressures. Thermodynamic data in the Si-O-H(g) system were determined with this technique. Free Jet Sampling Mass Spectrometry can be used to study gas-solid interactions at a pressure of one atmosphere. Volatile Si(OH)4(g) was identified by this mass spectrometry technique. A High Pressure Burner Rig is used to expose high temperature materials in hydrocarbon-fueled combustion environments. Silicon carbide (SiC) volatility rates were measured in the burner rig as a function of total pressure, gas velocity and temperature. Finally, the Research Combustion Lab Rocket Test Cell is used to expose high temperature materials in hydrogen/oxygen rocket engine environments to assess material durability. SiC recession due to rocket engine exposures was measured as a function of oxidant/fuel ratio, temperature, and total pressure. The emphasis of the discussion for all techniques will be placed on experimental factors that must be controlled for accurate acquisition of results and reliable prediction of high temperature material chemical stability.

Si impurity concentration in nominally undoped Al0.7Ga0.3N grown in a planetary MOVPE reactor

NASA Astrophysics Data System (ADS)

Jeschke, J.; Knauer, A.; Weyers, M.

2018-02-01

The unintentional silicon incorporation during the metalorganic vapor phase epitaxy (MOVPE) of nominally undoped Al0.7Ga0.3N in a Planetary Reactor under various growth conditions was investigated. Dependent on growth temperature, pressure and V/III ratio, Si concentrations of below 1 × 1016 up to 4 × 1017 cm-3 were measured. Potential Si sources are discussed and, by comparing samples grown in a SiC coated reactor setup and in a TaC coated setup, the SiC coatings in the reactor are identified as the most likely source for the unintentional Si doping at elevated temperatures above 1080 °C. Under identical growth conditions the background Si concentration can be reduced by up to an order of magnitude when using TaC coatings.

Silicon carbide whisker reinforced ceramic composites and method for making same

DOEpatents

Wei, G.C.

1989-01-24

The present invention is directed to the fabrication of ceramic composites which possess improved mechanical properties especially increased fracture toughness. In the formation of these ceramic composites, the single crystal SiC whiskers are mixed with fine ceramic powders of a ceramic material such as Al{sub 2}O{sub 3}, mullite, or B{sub 4}C. The mixtures which contain a homogeneous dispersion of the SiC whiskers are hot pressed at pressures in a range of about 28 to 70 MPa and temperatures in the range of about 1,600 to 1,950 C with pressing times varying from about 0.75 to 2.5 hours. The resulting ceramic composites show an increase in fracture toughness which represents as much as a two-fold increase over that of the matrix material.

Chlorine-trapped CVD bilayer graphene for resistive pressure sensor with high detection limit and high sensitivity

NASA Astrophysics Data System (ADS)

Phuong Pham, Viet; Triet Nguyen, Minh; Park, Jin Woo; Kwak, Sung Soo; Nguyen, Dieu Hien Thi; Kyeom Mun, Mu; Danh Phan, Hoang; San Kim, Doo; Kim, Ki Hyun; Lee, Nae-Eung; Yeom, Geun Young

2017-06-01

Pressure sensing is one of the key functions for smart electronics. Considerably more effort is required to achieve the fabrication of pressure sensors that can imitate and overcome the sophisticated pressure sensing characteristics in nature and industry, especially in the innovation of materials and structures. Almost all of the pressure sensors reported until now have a high sensitivity at a low-pressure detection limit (<10 kPa). While the exploration of a pressure sensor with a high sensitivity and a high responsivity at a high-pressure is challenging, it is required for next generation smart electronics. Here, we report an exotic heterostructure pressure sensor based on ZnO/chlorine radical-trap doped bilayer graphene (ZGClG) as an ideal channel for pressure sensors. Using this ZGClG as the channel, this study shows the possibility of forming a pressure sensor with a high sensitivity (0.19 kPa-1) and a high responsivity (0.575 s) at V  =  1 V on glass substrate. Further, the pressure detection limit of this device was as high as 98 kPa. The investigation of the sensing mechanism under pressure has revealed that the significant improved sensing effect is related to the heavy p-type chlorine trap doping in the channel graphene with chlorine radicals without damaging the graphene. This work indicates that the ZGClG channel used for the pressure sensing device could also provide a simple and essential sensing platform for chemical-, medical-, and biological-sensing for future smart electronics.

A High-Temperature Piezoresistive Pressure Sensor with an Integrated Signal-Conditioning Circuit.

PubMed

Yao, Zong; Liang, Ting; Jia, Pinggang; Hong, Yingping; Qi, Lei; Lei, Cheng; Zhang, Bin; Xiong, Jijun

2016-06-18

This paper focuses on the design and fabrication of a high-temperature piezoresistive pressure sensor with an integrated signal-conditioning circuit, which consists of an encapsulated pressure-sensitive chip, a temperature compensation circuit and a signal-conditioning circuit. A silicon on insulation (SOI) material and a standard MEMS process are used in the pressure-sensitive chip fabrication, and high-temperature electronic components are adopted in the temperature-compensation and signal-conditioning circuits. The entire pressure sensor achieves a hermetic seal and can be operated long-term in the range of -50 °C to 220 °C. Unlike traditional pressure sensor output voltage ranges (in the dozens to hundreds of millivolts), the output voltage of this sensor is from 0 V to 5 V, which can significantly improve the signal-to-noise ratio and measurement accuracy in practical applications of long-term transmission based on experimental verification. Furthermore, because this flexible sensor's output voltage is adjustable, general follow-up pressure transmitter devices for voltage converters need not be used, which greatly reduces the cost of the test system. Thus, the proposed high-temperature piezoresistive pressure sensor with an integrated signal-conditioning circuit is expected to be highly applicable to pressure measurements in harsh environments.

Embedding Piezoresistive Pressure Sensors to Obtain Online Pressure Profiles Inside Fiber Composite Laminates

PubMed Central

Kahali Moghaddam, Maryam; Breede, Arne; Brauner, Christian; Lang, Walter

2015-01-01

The production of large and complex parts using fiber composite materials is costly due to the frequent formation of voids, porosity and waste products. By embedding different types of sensors and monitoring the process in real time, the amount of wastage can be significantly reduced. This work focuses on developing a knowledge-based method to improve and ensure complete impregnation of the fibers before initiation of the resin cure. Piezoresistive and capacitive pressure sensors were embedded in fiber composite laminates to measure the real-time the pressure values inside the laminate. A change of pressure indicates resin infusion. The sensors were placed in the laminate and the resin was infused by vacuum. The embedded piezoresistive pressure sensors were able to track the vacuum pressure in the fiber composite laminate setup, as well as the arrival of the resin at the sensor. The pressure increase due to closing the resin inlet was also measured. In contrast, the capacitive type of sensor was found to be inappropriate for measuring these quantities. The following study demonstrates real-time monitoring of pressure changes inside the fiber composite laminate, which validate the use of Darcy’s law in porous media to control the resin flow during infusion. PMID:25825973

Improved response time of flexible microelectromechanical sensors employing eco-friendly nanomaterials.

PubMed

Fan, Shicheng; Dan, Li; Meng, Lingju; Zheng, Wei; Elias, Anastasia; Wang, Xihua

2017-11-09

Flexible force/pressure sensors are of interest for academia and industry and have applications in wearable technologies. Most of such sensors on the market or reported in journal publications are based on the operation mechanism of probing capacitance or resistance changes of the materials under pressure. Recently, we reported the microelectromechanical (MEM) sensors based on a different mechanism: mechanical switches. Multiples of such MEM sensors can be integrated to achieve the same function of regular force/pressure sensors while having the advantages of ease of fabrication and long-term stability in operation. Herein, we report the dramatically improved response time (more than one order of magnitude) of these MEM sensors by employing eco-friendly nanomaterials-cellulose nanocrystals. For instance, the incorporation of polydimethysiloxane filled with cellulose nanocrystals shortened the response time of MEM sensors from sub-seconds to several milliseconds, leading to the detection of both diastolic and systolic pressures in the radial arterial blood pressure measurement. Comprehensive mechanical and electrical characterization of the materials and the devices reveal that greatly enhanced storage modulus and loss modulus play key roles in this improved response time. The demonstrated fast-response flexible sensors enabled continuous monitoring of heart rate and complex cardiovascular signals using pressure sensors for future wearable sensing platforms.

Flat-plate solar array project. Task 1: Silicon material. Investigation of the hydrochlorination of SiC14

NASA Technical Reports Server (NTRS)

Mui, J. Y. P.

1982-01-01

A two inch diameter stainless steel reactor was designed and built to operate at pressures up to 500 psig for the experimental studies on the hydrochlorination of SiCl4 and metallurgical grade (m.g.) silicon metal to SiHCl3. In order to clearly see the effect of pressure, the experiments were carried out at low reactor pressures of 73 psig and 150 psig, respectively. A large pressure effect on the hydrochlorination reaction was observed between the results of the low pressure experiments and the results of the high pressure experiments. In general, higher pressure produces a higher conversion of SiHCl3, but at a lower reaction rate. The effect of temperature on the reaction rate was studied at 73 psig. Higher reaction temperature gave a higher conversion and a higher reaction rate. Samples of the materials used to construct the hydrochlorination reactor were prepared for corrosion tests.

Phase Interrogation Used for a Wireless Passive Pressure Sensor in an 800 °C High-Temperature Environment

PubMed Central

Zhang, Huixin; Hong, Yingping; Liang, Ting; Zhang, Hairui; Tan, Qiulin; Xue, Chenyang; Liu, Jun; Zhang, Wendong; Xiong, Jijun

2015-01-01

A wireless passive pressure measurement system for an 800 °C high-temperature environment is proposed and the impedance variation caused by the mutual coupling between a read antenna and a LC resonant sensor is analyzed. The system consists of a ceramic-based LC resonant sensor, a readout device for impedance phase interrogation, heat insulating material, and a composite temperature-pressure test platform. Performances of the pressure sensor are measured by the measurement system sufficiently, including pressure sensitivity at room temperature, zero drift from room temperature to 800 °C, and the pressure sensitivity under the 800 °C high temperature environment. The results show that the linearity of sensor is 0.93%, the repeatability is 6.6%, the hysteretic error is 1.67%, and the sensor sensitivity is 374 KHz/bar. The proposed measurement system, with high engineering value, demonstrates good pressure sensing performance in a high temperature environment. PMID:25690546

Embedding of MEMS pressure and temperature sensors in carbon fiber composites: a manufacturing approach

NASA Astrophysics Data System (ADS)

Javidinejad, Amir; Joshi, Shiv P.

2000-06-01

In this paper embedding of surface mount pressure and temperature sensors in the Carbon fiber composites are described. A commercially available surface mount pressure and temperature sensor are used for embedding in a composite lay- up of IM6/HST-7, IM6/3501 and AS4/E7T1-2 prepregs. The fabrication techniques developed here are the focus of this paper and provide for a successful embedding procedure of pressure sensors in fibrous composites. The techniques for positioning and insulating, the sensor and the lead wires, from the conductive carbon prepregs are described and illustrated. Procedural techniques are developed and discussed for isolating the sensor's flow-opening, from the exposure to the prepreg epoxy flow and exposure to the fibrous particles, during the autoclave curing of the composite laminate. The effects of the autoclave cycle (if any) on the operation of the embedded pressure sensor are discussed.

Erosion and strength degradation of biomorphic SiC.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Martinez-Fernandez, J.; de Arellano-Lopez, A. R; Varela-Feria, F. M.

2004-05-01

Solid-particle-erosion studies were conducted on biomorphic SiC based on eucalyptus and pine, reaction-bonded (RB) SiC, and hot-pressed (HP) SiC. The erodents were angular SiC abrasives of average diameter 63, 143, or 390 {mu}m and the impact velocity was 100 m s{sup -1}. Impact occurred at normal incidence. Material loss in all targets occurred by brittle fracture. The biomorphic specimens eroded by formation of both lateral and radial cracks and their erosion rates were higher than both conventional SiCs. The RB SiC eroded as a classic brittle material, by formation and propagation of lateral cracks. The HP SiC, the hardest target,more » was the most erosion resistant. In erosion of the HP SiC, the abrasive particles, especially the largest ones, fragmented upon impact. The resulting dissipation of energy led to relatively low erosion rates. Flexural strength before and after erosion was measured for the biomorphic eucalyptus, RB SiC, and HP SiC. Erosion damage reduced the flexural strengths of all of the specimens. The relative strength reductions were lowest for the biomorphic eucalyptus and highest for the HP SiC. The hot-pressed SiC responded as predicted by accepted models of impact damage in brittle solids. The responses of the biomorphic and reaction-bonded SiC specimens were modeled as if they consisted of only SiC and porosity. This approximation agreed reasonably well with observed degradations of strength.« less

Multi-parameter brain tissue microsensor and interface systems: calibration, reliability and user experiences of pressure and temperature sensors in the setting of neurointensive care.

PubMed

Childs, Charmaine; Wang, Li; Neoh, Boon Kwee; Goh, Hok Liok; Zu, Mya Myint; Aung, Phyo Wai; Yeo, Tseng Tsai

2014-10-01

The objective was to investigate sensor measurement uncertainty for intracerebral probes inserted during neurosurgery and remaining in situ during neurocritical care. This describes a prospective observational study of two sensor types and including performance of the complete sensor-bedside monitoring and readout system. Sensors from 16 patients with severe traumatic brain injury (TBI) were obtained at the time of removal from the brain. When tested, 40% of sensors achieved the manufacturer temperature specification of 0.1 °C. Pressure sensors calibration differed from the manufacturers at all test pressures in 8/20 sensors. The largest pressure measurement error was in the intraparenchymal triple sensor. Measurement uncertainty is not influenced by duration in situ. User experiences reveal problems with sensor 'handling', alarms and firmware. Rigorous investigation of the performance of intracerebral sensors in the laboratory and at the bedside has established measurement uncertainty in the 'real world' setting of neurocritical care.

Determination of ambroxol hydrochloride, methylparaben and benzoic acid in pharmaceutical preparations based on sequential injection technique coupled with monolithic column.

PubMed

Satínský, Dalibor; Huclová, Jitka; Ferreira, Raquel L C; Montenegro, Maria Conceição B S M; Solich, Petr

2006-02-13

The porous monolithic columns show high performance at relatively low pressure. The coupling of short monoliths with sequential injection technique (SIA) results in a new approach to implementation of separation step to non-separation low-pressure method. In this contribution, a new separation method for simultaneous determination of ambroxol, methylparaben and benzoic acid was developed based on a novel reversed-phase sequential injection chromatography (SIC) technique with UV detection. A Chromolith SpeedROD RP-18e, 50-4.6 mm column with 10 mm precolumn and a FIAlab 3000 system with a six-port selection valve and 5 ml syringe were used for sequential injection chromatographic separations in our study. The mobile phase used was acetonitrile-tetrahydrofuran-0.05M acetic acid (10:10:90, v/v/v), pH 3.75 adjusted with triethylamine, flow rate 0.48 mlmin(-1), UV-detection was at 245 nm. The analysis time was <11 min. A new SIC method was validated and compared with HPLC. The method was found to be useful for the routine analysis of the active compounds ambroxol and preservatives (methylparaben or benzoic acid) in various pharmaceutical syrups and drops.

Bio-Inspired Stretchable Absolute Pressure Sensor Network

PubMed Central

Guo, Yue; Li, Yu-Hung; Guo, Zhiqiang; Kim, Kyunglok; Chang, Fu-Kuo; Wang, Shan X.

2016-01-01

A bio-inspired absolute pressure sensor network has been developed. Absolute pressure sensors, distributed on multiple silicon islands, are connected as a network by stretchable polyimide wires. This sensor network, made on a 4’’ wafer, has 77 nodes and can be mounted on various curved surfaces to cover an area up to 0.64 m × 0.64 m, which is 100 times larger than its original size. Due to Micro Electro-Mechanical system (MEMS) surface micromachining technology, ultrathin sensing nodes can be realized with thicknesses of less than 100 µm. Additionally, good linearity and high sensitivity (~14 mV/V/bar) have been achieved. Since the MEMS sensor process has also been well integrated with a flexible polymer substrate process, the entire sensor network can be fabricated in a time-efficient and cost-effective manner. Moreover, an accurate pressure contour can be obtained from the sensor network. Therefore, this absolute pressure sensor network holds significant promise for smart vehicle applications, especially for unmanned aerial vehicles. PMID:26729134

Inductive passive sensor for intraparenchymal and intraventricular monitoring of intracranial pressure.

PubMed

Behfar, Mohammad H; Abada, Emily; Sydanheimo, Lauri; Goldman, Ken; Fleischman, Aaron J; Gupta, Nalin; Ukkonen, Leena; Roy, Shuvo

2016-08-01

Accurate measurement of intracranial hypertension is crucial for the management of elevated intracranial pressure (ICP). Catheter-based intraventricular ICP measurement is regarded as the gold standard for accurate ICP monitoring. However, this method is invasive, time-limited, and associated with complications. In this paper, we propose an implantable passive sensor that could be used for continuous intraparenchymal and intraventricular ICP monitoring. Moreover, the sensor can be placed simultaneously along with a cerebrospinal fluid shunt system in order to monitor its function. The sensor consists of a flexible coil which is connected to a miniature pressure sensor via an 8-cm long, ultra-thin coaxial cable. An external orthogonal-coil RF probe communicates with the sensor to detect pressure variation. The performance of the sensor was evaluated in an in vitro model for intraparenchymal and intraventricular ICP monitoring. The findings from this study demonstrate proof-of-concept of intraparenchymal and intraventricular ICP measurement using inductive passive pressure sensors.

A High Temperature Capacitive Pressure Sensor Based on Alumina Ceramic for in Situ Measurement at 600 °C

PubMed Central

Tan, Qiulin; Li, Chen; Xiong, Jijun; Jia, Pinggang; Zhang, Wendong; Liu, Jun; Xue, Chenyang; Hong, Yingping; Ren, Zhong; Luo, Tao

2014-01-01

In response to the growing demand for in situ measurement of pressure in high-temperature environments, a high temperature capacitive pressure sensor is presented in this paper. A high-temperature ceramic material-alumina is used for the fabrication of the sensor, and the prototype sensor consists of an inductance, a variable capacitance, and a sealed cavity integrated in the alumina ceramic substrate using a thick-film integrated technology. The experimental results show that the proposed sensor has stability at 850 °C for more than 20 min. The characterization in high-temperature and pressure environments successfully demonstrated sensing capabilities for pressure from 1 to 5 bar up to 600 °C, limited by the sensor test setup. At 600 °C, the sensor achieves a linear characteristic response, and the repeatability error, hysteresis error and zero-point drift of the sensor are 8.3%, 5.05% and 1%, respectively. PMID:24487624

Proceedings of a U.S. Geological Survey pressure-sensor Workshop, Denver, Colorado, July 28-31, 1992

USGS Publications Warehouse

Wilbourn, Sammy L.

1994-01-01

The U.S. Geological Survey (USGS) conducted a Pressure Sensor Workshop, oriented toward the measurement of stage in surface waters, in Denver, Colorado, July 28-31, 1992. Twenty attendees from the U.S. Geological Survey and the National Oceanic and Atmospheric Administration gave presentations concerning their experiences with the use of pressure sensors in hydrologic investigations. This report is a compilation of the abstracts of the presentations made at the workshop. Workshop participants concluded that each of the sensors evaluated by the U.S. Geological Survey has strengths and weaknesses. Personnel contemplating the use of pressure sensors discussed at this workshop should contact workshop attendees and consult with them about their experiences with those sensors. The attendees preferred to use stilling wells with float-operated water-level sensors as the primary means for monitoring water levels. However, pressure sensor systems were favored as replacements for mercury manometers and as alternatives to stilling wells at sites where stilling wells are not practical or cost effective.

Calculation Of Pneumatic Attenuation In Pressure Sensors

NASA Technical Reports Server (NTRS)

Whitmore, Stephen A.

1991-01-01

Errors caused by attenuation of air-pressure waves in narrow tubes calculated by method based on fundamental equations of flow. Changes in ambient pressure transmitted along narrow tube to sensor. Attenuation of high-frequency components of pressure wave calculated from wave equation derived from Navier-Stokes equations of viscous flow in tube. Developed to understand and compensate for frictional attenuation in narrow tubes used to connect aircraft pressure sensors with pressure taps on affected surfaces.

Measurement of interface strength by a laser spallation technique

NASA Astrophysics Data System (ADS)

Gupta, V.; Argon, A. S.; Parks, D. M.; Cornie, J. A.

A LASER spallation experiment has been developed to measure the strength of planar interfaces between a substrate and a thin coating (in the thickness range of 0.3-3 μm). In this technique a laser pulse of a high enough energy and a pre-determined duration is converted into a pressure pulse of a critical amplitude and width that is sent through the substrate toward the free surface with the coating. The reflected tensile wave from the free surface of the coating pries-off the coating. The critical stress amplitude that accomplishes the removal of the coating is determined from a computer simulation of the process. The simulation itself is verified by means of a piezo-electric crystal probe that is capable of mapping out the profile of the stress pulse generated by the laser pulse. Interface strength values ranging from 3.7 to 10.5 GPa were determined for the Si/SiC system. For the interfaces between pyrolytic graphite and SiC coatings an average strength of 7.2 GPA was measured, while the corresponding interface strength between a Pitch-55 type ribbon with a fiber-like morphology and SiC coatings was found to be 0.23 GPa. Intrinsic strengths of SiC coatings and Si crystal were also determined using this technique. These were, on the average, 8.6 GPa for Si crystals and 11.9 GPa for a SiC coating. Furthermore, the potential of the laser technique to determine the interface toughness was also demonstrated, provided well-characterizable flaws can be planted on the interface.

Spatially digitized tactile pressure sensors with tunable sensitivity and sensing range.

PubMed

Choi, Eunsuk; Sul, Onejae; Hwang, Soonhyung; Cho, Joonhyung; Chun, Hyunsuk; Kim, Hongjun; Lee, Seung-Beck

2014-10-24

When developing an electronic skin with touch sensation, an array of tactile pressure sensors with various ranges of pressure detection need to be integrated. This requires low noise, highly reliable sensors with tunable sensing characteristics. We demonstrate the operation of tactile pressure sensors that utilize the spatial distribution of contact electrodes to detect various ranges of tactile pressures. The device consists of a suspended elastomer diaphragm, with a carbon nanotube thin-film on the bottom, which makes contact with the electrodes on the substrate with applied pressure. The electrodes separated by set distances become connected in sequence with tactile pressure, enabling consecutive electrodes to produce a signal. Thus, the pressure is detected not by how much of a signal is produced but by which of the electrodes is registering an output. By modulating the diaphragm diameter, and suspension height, it was possible to tune the pressure sensitivity and sensing range. Also, adding a fingerprint ridge structure enabled the sensor to detect the periodicity of sub-millimeter grating patterns on a silicon wafer.

Pressure standards and sensors up to 3 GPa, actual state and development trends

NASA Astrophysics Data System (ADS)

Wisniewski, Roland; Molinar, Gianfranco

1999-04-01

Metrological problems connected with pressure standards and sensors up to 3 GPa as an introduction to the pressure measurements in the so-called “GIGAPASCAL REGION”, 1-100 GPa, are discussed. Re-examination of Bi I-Bi II phase transition pressure as a fixed point of the International Practical Pressure Scale and correction of the NaCl Pressure Scale is proposed. Well-established sensors as candidates for secondary pressure standards up to 3 GPa are briefly presented.

Suppression of span in sealed microcavity Fabry-Perot pressure sensors

NASA Astrophysics Data System (ADS)

Mishra, Shivam; Rajappa, Balasubramaniam; Chandra, Sudhir

2017-01-01

Optical microelectromechanical system pressure sensors working on the principle of extrinsic Fabry-Perot (FP) interferometer are designed and fabricated for pressure range of 1-bar absolute. Anodic bonding of silicon with glass is performed under atmospheric pressure to form FP cavity. This process results in entrapment of gas in the sealed microcavity. The effect of trapped gas is investigated on sensor characteristics. A closed-loop solution is derived for the deflection of the diaphragm of a sealed microcavity pressure sensor. Phenomenon of "suppression of span" is brought out. The sensors are tested using white light interferometry technique. The residual pressure of the trapped gas is estimated from the experiments. The developed model has been used to estimate the deflection sensitivity of the free diaphragm and the extent of suppression of span after bonding.

Highly Sensitive, Transparent, and Durable Pressure Sensors Based on Sea-Urchin Shaped Metal Nanoparticles.

PubMed

Lee, Donghwa; Lee, Hyungjin; Jeong, Youngjun; Ahn, Yumi; Nam, Geonik; Lee, Youngu

2016-11-01

Highly sensitive, transparent, and durable pressure sensors are fabricated using sea-urchin-shaped metal nanoparticles and insulating polyurethane elastomer. The pressure sensors exhibit outstanding sensitivity (2.46 kPa -1 ), superior optical transmittance (84.8% at 550 nm), fast response/relaxation time (30 ms), and excellent operational durability. In addition, the pressure sensors successfully detect minute movements of human muscles. © 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Evaluation of Flexible Force Sensors for Pressure Monitoring in Treatment of Chronic Venous Disorders.

PubMed

Parmar, Suresh; Khodasevych, Iryna; Troynikov, Olga

2017-08-21

The recent use of graduated compression therapy for treatment of chronic venous disorders such as leg ulcers and oedema has led to considerable research interest in flexible and low-cost force sensors. Properly applied low pressure during compression therapy can substantially improve the treatment of chronic venous disorders. However, achievement of the recommended low pressure levels and its accurate determination in real-life conditions is still a challenge. Several thin and flexible force sensors, which can also function as pressure sensors, are commercially available, but their real-life sensing performance has not been evaluated. Moreover, no researchers have reported information on sensor performance during static and dynamic loading within the realistic test conditions required for compression therapy. This research investigated the sensing performance of five low-cost commercial pressure sensors on a human-leg-like test apparatus and presents quantitative results on the accuracy and drift behaviour of these sensors in both static and dynamic conditions required for compression therapy. Extensive experimental work on this new human-leg-like test setup demonstrated its utility for evaluating the sensors. Results showed variation in static and dynamic sensing performance, including accuracy and drift characteristics. Only one commercially available pressure sensor was found to reliably deliver accuracy of 95% and above for all three test pressure points of 30, 50 and 70 mmHg.

Evaluation of Flexible Force Sensors for Pressure Monitoring in Treatment of Chronic Venous Disorders

PubMed Central

Parmar, Suresh; Khodasevych, Iryna; Troynikov, Olga

2017-01-01

The recent use of graduated compression therapy for treatment of chronic venous disorders such as leg ulcers and oedema has led to considerable research interest in flexible and low-cost force sensors. Properly applied low pressure during compression therapy can substantially improve the treatment of chronic venous disorders. However, achievement of the recommended low pressure levels and its accurate determination in real-life conditions is still a challenge. Several thin and flexible force sensors, which can also function as pressure sensors, are commercially available, but their real-life sensing performance has not been evaluated. Moreover, no researchers have reported information on sensor performance during static and dynamic loading within the realistic test conditions required for compression therapy. This research investigated the sensing performance of five low-cost commercial pressure sensors on a human-leg-like test apparatus and presents quantitative results on the accuracy and drift behaviour of these sensors in both static and dynamic conditions required for compression therapy. Extensive experimental work on this new human-leg-like test setup demonstrated its utility for evaluating the sensors. Results showed variation in static and dynamic sensing performance, including accuracy and drift characteristics. Only one commercially available pressure sensor was found to reliably deliver accuracy of 95% and above for all three test pressure points of 30, 50 and 70 mmHg. PMID:28825672

A novel integrated multifunction micro-sensor for three-dimensional micro-force measurements.

PubMed

Wang, Weizhong; Zhao, Yulong; Qin, Yafei

2012-01-01

An integrated multifunction micro-sensor for three-dimensional micro-force precision measurement under different pressure and temperature conditions is introduced in this paper. The integrated sensor consists of three kinds of sensors: a three-dimensional micro-force sensor, an absolute pressure sensor and a temperature sensor. The integrated multifunction micro-sensor is fabricated on silicon wafers by micromachining technology. Different doping doses of boron ion, placement and structure of resistors are tested for the force sensor, pressure sensor and temperature sensor to minimize the cross interference and optimize the properties. A glass optical fiber, with a ladder structure and sharp tip etched by buffer oxide etch solution, is glued on the micro-force sensor chip as the tactile probe. Experimental results show that the minimum force that can be detected by the force sensor is 300 nN; the lateral sensitivity of the force sensor is 0.4582 mV/μN; the probe length is linearly proportional to sensitivity of the micro-force sensor in lateral; the sensitivity of the pressure sensor is 0.11 mv/KPa; the sensitivity of the temperature sensor is 5.836 × 10(-3) KΩ/°C. Thus it is a cost-effective method to fabricate integrated multifunction micro-sensors with different measurement ranges that could be used in many fields.

Development of two-dimensional interdigitated center of pressure sensor

NASA Astrophysics Data System (ADS)

Yoo, Byungseok; Pines, Darryll J.

2017-12-01

This paper presents the development of a two-dimensional (2D) flexible patch sensor to detect and monitor the center of pressure (CoP) location and the total magnitude of a spatially distributed pressure to the specific surface areas of engineering structures. The CoP sensor with the contact mode induced by a pressure distribution was formulated by force sensitive resistor technology and was mainly composed of a thin conductive polymer layer, adhesive spacers, and two interdigitated patterned electrode films with unique sensing aperture shadings. By properly mapping the interdigitated electrode patterns to the top and bottom surfaces of the conductive polymer, the proposed sensor ideally enables to measure an overall applied pressure level and its centroid location within a predetermined sensing region in real-time. The CoP sensor containing 36 sensing sections within a dimension of around 3 × 3 inches was prototyped and experimentally investigated to verify its capability to identify the CoP location and magnitude due to the presence of a permanent magnet-based local pressure distribution. Only five electric wires connected to the CoP sensor to inspect the pressure-sensing positions of 36 segments. The evaluation results of the measured sensor data demonstrate good agreements with the actual test parameters such as the total pressure and its centroid position with about 5% locational error. However, to provide accurate information on the overall pressure range, the compensation factors must be determined and applied to the individual sensing sections of the sensor.

A Wind Tunnel Study on the Mars Pathfinder (MPF) Lander Descent Pressure Sensor

NASA Technical Reports Server (NTRS)

Soriano, J. Francisco; Coquilla, Rachael V.; Wilson, Gregory R.; Seiff, Alvin; Rivell, Tomas

2001-01-01

The primary focus of this study was to determine the accuracy of the Mars Pathfinder lander local pressure readings in accordance with the actual ambient atmospheric pressures of Mars during parachute descent. In order to obtain good measurements, the plane of the lander pressure sensor opening should ideally be situated so that it is parallel to the freestream. However, due to two unfavorable conditions, the sensor was positioned in locations where correction factors are required. One of these disadvantages is due to the fact that the parachute attachment point rotated the lander's center of gravity forcing the location of the pressure sensor opening to be off tangent to the freestream. The second and most troublesome factor was that the lander descends with slight oscillations that could vary the amplitude of the sensor readings. In order to accurately map the correction factors required at each sensor position, an experiment simulating the lander descent was conducted in the Martian Surface Wind Tunnel at NASA Ames Research Center. Using a 115 scale model at Earth ambient pressures, the test settings provided the necessary Reynolds number conditions in which the actual lander was possibly subjected to during the descent. In the analysis and results of this experiment, the readings from the lander sensor were converted to the form of pressure coefficients. With a contour map of pressure coefficients at each lander oscillatory position, this report will provide a guideline to determine the correction factors required for the Mars Pathfinder lander descent pressure sensor readings.

Air pressure measurement

NASA Technical Reports Server (NTRS)

Ballard, H. N.

1978-01-01

The pressure measurement was made by a Model 830J Rosemont sensor which utilized the principle of a changing pressure to change correspondingly the capacitance of the pressure sensitive element. The sensor's range was stated to be from zero to 100 Torr (14 km); however, the sensor was not activated until an altitude of 20 km (41 Torr) was reached during the balloon ascent. The resolution of the sensor was specified by the manufacturer as infinitesimal; however, associated electronic and pressure readout systems limit the resolution to .044 Torr. Thus in the vicinity of an altitude of 30 km the pressure resolution corresponded to an altitude resolution of approximately 33 meters.

Characterization of Piezoresistive PEDOT:PSS Pressure Sensors with Inter-Digitated and Cross-Point Electrode Structures

PubMed Central

Wang, Jer-Chyi; Karmakar, Rajat Subhra; Lu, Yu-Jen; Huang, Chiung-Yin; Wei, Kuo-Chen

2015-01-01

The piezoresistive characteristics of poly(3,4-ethylenedioxythiophene):polystyrene sulfonate (PEDOT:PSS) pressure sensors with inter-digitated (IDE) and cross-point electrode (CPE) structures have been investigated. A small variation of the resistance of the pressure sensors with IDE without bottom indium-tin-oxide (b-ITO) film and with CPE structures was observed owing to the single carrier-conducting pathway. For the IDE pressure sensors with b-ITO, the piezoresistive characteristics at low and high pressure were similar to those of the pressure sensors with IDE without b-ITO and with CPE structures, respectively, leading to increased piezoresistive pressure sensitivity as the PEDOT:PSS film thickness decreased. A maximum sensitivity of more than 42 kΩ/Pa was achieved. When the normal pressure was applied, the increased number of conducting points or the reduced distance between the PEDOT oligomers within the PEDOT:PSS film resulted in a decrease of the resistance. The piezoresistive pressure sensors with a single carrier-conducting pathway, i.e., IDE without b-ITO and CPE structures, exhibited a small relaxation time and a superior reversible operation, which can be advantageous for fast piezoresistive response applications. PMID:25569756

Characterization of piezoresistive PEDOT:PSS pressure sensors with inter-digitated and cross-point electrode structures.

PubMed

Wang, Jer-Chyi; Karmakar, Rajat Subhra; Lu, Yu-Jen; Huang, Chiung-Yin; Wei, Kuo-Chen

2015-01-05

The piezoresistive characteristics of poly(3,4-ethylenedioxythiophene):polystyrene sulfonate (PEDOT:PSS) pressure sensors with inter-digitated (IDE) and cross-point electrode (CPE) structures have been investigated. A small variation of the resistance of the pressure sensors with IDE without bottom indium-tin-oxide (b-ITO) film and with CPE structures was observed owing to the single carrier-conducting pathway. For the IDE pressure sensors with b-ITO, the piezoresistive characteristics at low and high pressure were similar to those of the pressure sensors with IDE without b-ITO and with CPE structures, respectively, leading to increased piezoresistive pressure sensitivity as the PEDOT:PSS film thickness decreased. A maximum sensitivity of more than 42 kΩ/Pa was achieved. When the normal pressure was applied, the increased number of conducting points or the reduced distance between the PEDOT oligomers within the PEDOT:PSS film resulted in a decrease of the resistance. The piezoresistive pressure sensors with a single carrier-conducting pathway, i.e., IDE without b-ITO and CPE structures, exhibited a small relaxation time and a superior reversible operation, which can be advantageous for fast piezoresistive response applications.

Temperature Compensation Fiber Bragg Grating Pressure Sensor Based on Plane Diaphragm

NASA Astrophysics Data System (ADS)

Liang, Minfu; Fang, Xinqiu; Ning, Yaosheng

2018-06-01

Pressure sensors are the essential equipments in the field of pressure measurement. In this work, we propose a temperature compensation fiber Bragg grating (FBG) pressure sensor based on the plane diaphragm. The plane diaphragm and pressure sensitivity FBG (PS FBG) are used as the pressure sensitive components, and the temperature compensation FBG (TC FBG) is used to improve the temperature cross-sensitivity. Mechanical deformation model and deformation characteristics simulation analysis of the diaphragm are presented. The measurement principle and theoretical analysis of the mathematical relationship between the FBG central wavelength shift and pressure of the sensor are introduced. The sensitivity and measure range can be adjusted by utilizing the different materials and sizes of the diaphragm to accommodate different measure environments. The performance experiments are carried out, and the results indicate that the pressure sensitivity of the sensor is 35.7 pm/MPa in a range from 0 MPa to 50 MPa and has good linearity with a linear fitting correlation coefficient of 99.95%. In addition, the sensor has the advantages of low frequency chirp and high stability, which can be used to measure pressure in mining engineering, civil engineering, or other complex environment.

Fabrication and characterization of bending and pressure sensors for a soft prosthetic hand

NASA Astrophysics Data System (ADS)

Rocha, Rui Pedro; Alhais Lopes, Pedro; de Almeida, Anibal T.; Tavakoli, Mahmoud; Majidi, Carmel

2018-03-01

We demonstrate fabrication, characterization, and implementation of ‘soft-matter’ pressure and bending sensors for a soft robotic hand. The elastomer-based sensors are embedded in a robot finger composed of a 3D printed endoskeleton and covered by an elastomeric skin. Two types of sensors are evaluated, resistive pressure sensors and capacitive pressure sensors. The sensor is fabricated entirely out of insulating and conductive rubber, the latter composed of polydimethylsiloxane (PDMS) elastomer embedded with a percolating network of structured carbon black (CB). The sensor-integrated fingers have a simple materials architecture, can be fabricated with standard rapid prototyping methods, and are inexpensive to produce. When incorporated into a robotic hand, the CB-PDMS sensors and PDMS carrier medium function as an ‘artificial skin’ for touch and bend detection. Results show improved response with a capacitive sensor architecture, which, unlike a resistive sensor, is robust to electromechanical hysteresis, creep, and drift in the CB-PDMS composite. The sensorized fingers are integrated in an anthropomorphic hand and results for a variety of grasping tasks are presented.

Investigation on mechanical behavior and material characteristics of various weight composition of SiCp reinforced aluminium metal matrix composite

NASA Astrophysics Data System (ADS)

Pichumani, Sivachidambaram; Srinivasan, Raghuraman; Ramamoorthi, Venkatraman

2018-02-01

Aluminium - silicon carbide (Al - SiC) metal matrix composite is produced with following wt % of SiC reinforcement (4%, 8% & 12%) using stir casting method. Mechanical testing such as micro hardness, tensile testing and bend testing were performed. Characterizations, namely micro structure, X-ray diffraction (XRD) analysis, inductive coupled plasma - optical emission spectroscopy (ICP-OES) and scanning electron microscopy (SEM) analysis, were carried out on Al - SiC composites. The presence of SiC on Al - SiC composite is confirmed through XRD technique and microstructure. The percentage of SiC was confirmed through ICP-OES technique. Increase in weight percentage of SiC tends to increase micro hardness, ultimate strength & yield strength but it reduces the bend strength and elongation (%) of the material. SEM factrography of tensile tested fractured samples of Al - 8% SiC & Al - 12% SiC showed fine dimples on fractured surface & coarse dimples fractured surface respectively. This showed significant fracture differences between Al - 8% SiC & Al - 12% SiC. From the above experiment, Al - 8% SiC had good micro hardness, ultimate strength & yield strength without significant loss in elongation (%) & bend strength.

Size effect of optical silica microsphere pressure sensors

NASA Astrophysics Data System (ADS)

Jiao, Xinbing; Hao, Ruirui; Pan, Qian; Zhao, Xinwei; Bai, Xue

2018-07-01

Two types of optical pressure sensors with silica microspheres are proposed. The size effect of optical silica microsphere pressure sensors is studied by using a single-wavelength laser beam and polarimeters. The silica microspheres with diameters of 1.0 μm, 1.5 μm and 2.0 μm are prepared on garnet substrates by a self-assembly method. The pressure and the optical properties of the silica microspheres are measured by a resistance strain sensor and Thorlabs Stokes polarimeters as a function of the external direct current (DC) voltage. The optical silica microsphere sensor in transmission mode is suitable for pressure measuring. The results show that the pressure increases, while the diameter of the silica microspheres decreases. The maximum internal pressure can reach up to 7.3 × 107 Pa when the diameter of the silica microspheres is 1.0 μm.

MEMS capacitive pressure sensor monolithically integrated with CMOS readout circuit by using post CMOS processes

NASA Astrophysics Data System (ADS)

Jang, Munseon; Yun, Kwang-Seok

2017-12-01

In this paper, we presents a MEMS pressure sensor integrated with a readout circuit on a chip for an on-chip signal processing. The capacitive pressure sensor is formed on a CMOS chip by using a post-CMOS MEMS processes. The proposed device consists of a sensing capacitor that is square in shape, a reference capacitor and a readout circuitry based on a switched-capacitor scheme to detect capacitance change at various environmental pressures. The readout circuit was implemented by using a commercial 0.35 μm CMOS process with 2 polysilicon and 4 metal layers. Then, the pressure sensor was formed by wet etching of metal 2 layer through via hole structures. Experimental results show that the MEMS pressure sensor has a sensitivity of 11 mV/100 kPa at the pressure range of 100-400 kPa.

Flexible, highly sensitive pressure sensor with a wide range based on graphene-silk network structure

NASA Astrophysics Data System (ADS)

Liu, Ying; Tao, Lu-Qi; Wang, Dan-Yang; Zhang, Tian-Yu; Yang, Yi; Ren, Tian-Ling

2017-03-01

In this paper, a flexible, simple-preparation, and low-cost graphene-silk pressure sensor based on soft silk substrate through thermal reduction was demonstrated. Taking silk as the support body, the device had formed a three-dimensional structure with ordered multi-layer structure. Through a simple and low-cost process technology, graphene-silk pressure sensor can achieve the sensitivity value of 0.4 kPa - 1 , and the measurement range can be as high as 140 kPa. Besides, pressure sensor can have a good combination with knitted clothing and textile product. The signal had good reproducibility in response to different pressures. Furthermore, graphene-silk pressure sensor can not only detect pressure higher than 100 kPa, but also can measure weak body signals. The characteristics of high-sensitivity, good repeatability, flexibility, and comfort for skin provide the high possibility to fit on various wearable electronics.

Fiber optic and laser sensors IX; Proceedings of the Meeting, Boston, MA, Sept. 3-5, 1991

NASA Technical Reports Server (NTRS)

Depaula, Ramon P. (Editor); Udd, Eric (Editor)

1991-01-01

The present volume on fiber-optic and laser sensors discusses industrial applications of fiber-optic sensors, fiber-optic temperature sensors, fiber-optic current sensors, fiber-optic pressure/displacement/vibration sensors, and generic fiber-optic systems. Attention is given to a fiber-sensor design for turbine engines, fiber-optic remote Fourier transform IR spectroscopy, near-IR fiber-optic temperature sensors, and an intensity-type fiber-optic electric current sensor. Topics addressed include fiber-optic magnetic field sensors based on the Faraday effect in new materials, diaphragm size and sensitivity for fiber-optic pressure sensors, a microbend pressure sensor for high-temperature environments, and linear position sensing by light exchange between two lossy waveguides. Also discussed are two-mode elliptical-core fiber sensors for measurement of strain and temperature, a fiber-optic interferometric X-ray dosimeter, fiber-optic interferometric sensors using multimode fibers, and optical fiber sensing of corona discharges.

Design optimization and fabrication of a novel structural piezoresistive pressure sensor for micro-pressure measurement

NASA Astrophysics Data System (ADS)

Li, Chuang; Cordovilla, Francisco; Ocaña, José L.

2018-01-01

This paper presents a novel structural piezoresistive pressure sensor with a four-beams-bossed-membrane (FBBM) structure that consisted of four short beams and a central mass to measure micro-pressure. The proposed structure can alleviate the contradiction between sensitivity and linearity to realize the micro measurement with high accuracy. In this study, the design, fabrication and test of the sensor are involved. By utilizing the finite element analysis (FEA) to analyze the stress distribution of sensitive elements and subsequently deducing the relationships between structural dimensions and mechanical performance, the optimization process makes the sensor achieve a higher sensitivity and a lower pressure nonlinearity. Based on the deduced equations, a series of optimized FBBM structure dimensions are ultimately determined. The designed sensor is fabricated on a silicon wafer by using traditional MEMS bulk-micromachining and anodic bonding technology. Experimental results show that the sensor achieves the sensitivity of 4.65 mV/V/kPa and pressure nonlinearity of 0.25% FSS in the operating range of 0-5 kPa at room temperature, indicating that this novel structure sensor can be applied in measuring the absolute micro pressure lower than 5 kPa.

Ultrasensitive and Highly Stable Resistive Pressure Sensors with Biomaterial-Incorporated Interfacial Layers for Wearable Health-Monitoring and Human-Machine Interfaces.

PubMed

Chang, Hochan; Kim, Sungwoong; Jin, Sumin; Lee, Seung-Woo; Yang, Gil-Tae; Lee, Ki-Young; Yi, Hyunjung

2018-01-10

Flexible piezoresistive sensors have huge potential for health monitoring, human-machine interfaces, prosthetic limbs, and intelligent robotics. A variety of nanomaterials and structural schemes have been proposed for realizing ultrasensitive flexible piezoresistive sensors. However, despite the success of recent efforts, high sensitivity within narrower pressure ranges and/or the challenging adhesion and stability issues still potentially limit their broad applications. Herein, we introduce a biomaterial-based scheme for the development of flexible pressure sensors that are ultrasensitive (resistance change by 5 orders) over a broad pressure range of 0.1-100 kPa, promptly responsive (20 ms), and yet highly stable. We show that employing biomaterial-incorporated conductive networks of single-walled carbon nanotubes as interfacial layers of contact-based resistive pressure sensors significantly enhances piezoresistive response via effective modulation of the interlayer resistance and provides stable interfaces for the pressure sensors. The developed flexible sensor is capable of real-time monitoring of wrist pulse waves under external medium pressure levels and providing pressure profiles applied by a thumb and a forefinger during object manipulation at a low voltage (1 V) and power consumption (<12 μW). This work provides a new insight into the material candidates and approaches for the development of wearable health-monitoring and human-machine interfaces.

Using smartphone pressure sensors to measure vertical velocities of elevators, stairways, and drones

NASA Astrophysics Data System (ADS)

Monteiro, Martín; Martí, Arturo C.

2017-01-01

We measure the vertical velocities of elevators, pedestrians climbing stairs, and drones (flying unmanned aerial vehicles), by means of smartphone pressure sensors. The barometric pressure obtained with the smartphone is related to the altitude of the device via the hydrostatic approximation. From the altitude values, vertical velocities are derived. The approximation considered is valid in the first hundred meters of the inner layers of the atmosphere. In addition to pressure, acceleration values were also recorded using the built-in accelerometer. Numerical integration was performed, obtaining both vertical velocity and altitude. We show that data obtained using the pressure sensor is significantly less noisy than that obtained using the accelerometer. Error accumulation is also evident in the numerical integration of the acceleration values. In the proposed experiments, the pressure sensor also outperforms GPS, because this sensor does not receive satellite signals indoors and, in general, the operating frequency is considerably lower than that of the pressure sensor. In the cases in which it is possible, comparison with reference values taken from the architectural plans of buildings validates the results obtained using the pressure sensor. This proposal is ideally performed as an external or outreach activity with students to gain insight about fundamental questions in mechanics, fluids, and thermodynamics.

Microfabricated pressure and shear stress sensors

NASA Technical Reports Server (NTRS)

Liu, Chang (Inventor); Chen, Jack (Inventor); Engel, Jonathan (Inventor)

2009-01-01

A microfabricated pressure sensor. The pressure sensor comprises a raised diaphragm disposed on a substrate. The diaphragm is configured to bend in response to an applied pressure difference. A strain gauge of a conductive material is coupled to a surface of the raised diaphragm and to at least one of the substrate and a piece rigidly connected to the substrate.

Low cost self-made pressure distribution sensors for ergonomic chair: Are they suitable for posture monitoring?

PubMed

Martinaitis, Arnas; Daunoraviciene, Kristina

2018-05-18

Long sitting causes many health problems for people. Healthy sitting monitoring systems, like real-time pressure distribution measuring, is in high demand and many methods of posture recognition were developed. Such systems are usually expensive and hardly available for the regular user. The aim of study is to develop low cost but sensitive enough pressure sensors and posture monitoring system. New self-made pressure sensors have been developed and tested, and prototype of pressure distribution measuring system was designed. Sensors measured at average noise amplitude of a = 56 mV (1.12%), average variation in sequential measurements of the same sensor s = 17 mV (0.34%). Signal variability between sensors averaged at 100 mV (2.0%). Weight to signal dependency graph was measured and hysteresis calculated. Results suggested the use of total sixteen sensors for posture monitoring system with accuracy of < 1.5% after relaxation and repeatability of around 2%. Results demonstrate that hand-made sensor sensitivity and repeatability are acceptable for posture monitoring, and it is possible to build low cost pressure distribution measurement system with graphical visualization without expensive equipment or complicated software.

N channel JFET based digital logic gate structure

NASA Technical Reports Server (NTRS)

Krasowski, Michael J. (Inventor)

2010-01-01

A circuit topography is presented which is used to create usable digital logic gates using N (negatively doped) channel Junction Field Effect Transistors (JFETs) and load resistors, level shifting resistors, and supply rails whose values are based on the direct current (DC) parametric distributions of those JFETs. This method has direct application to the current state of the art in high temperature, for example 300.degree. C. to 500.degree. C. and higher, silicon carbide (SiC) device production. The ability to produce inverting and combinatorial logic enables the production of pulse and edge triggered latches. This scale of logic synthesis would bring digital logic and state machine capabilities to devices operating in extremely hot environments, such as the surface of Venus, near hydrothermal vents, within nuclear reactors (SiC is inherently radiation hardened), and within internal combustion engines. The basic logic gate can be configured as a driver for oscillator circuits allowing for time bases and simple digitizers for resistive or reactive sensors. The basic structure of this innovation, the inverter, can be reconfigured into various analog circuit topographies through the use of feedback structures.

2.45 GHz Rectenna Designed for Wireless Sensors Operating at 500 C

NASA Technical Reports Server (NTRS)

Ponchak, George E.; Schwartz, Zachary D.; Jordan, Jennifer L.; Downey, Alan N.; Neudeck, Philip G.

2004-01-01

High temperature wireless sensors that operate at 500 C are required for aircraft engine monitoring and performance improvement These sensors would replace currently used hard-wired sensors and lead to a substantial reduction in mass. However, even if the sensor output data is transmitted wirelessly to a receiver in the cooler part of the engine, and the associated cables are eliminated, DC power cables are still required to operate the sensors and power the wireless circuits. To solve this problem, NASA is developing a rectenna, a circuit that receives RF power and converts it to DC power. The rectenna would be integrated with the wireless sensor, and the RF transmitter that powers the rectenna would be located in the cooler part of the engine. In this way, no cables to or from the sensors are required. Rectennas haw been demonstrated at ambient room temperature, but to date, no high temperature rectennas haw been reported. In this paper, we report the first rectenna designed for 2.45 GHz operation at 500 C. The circuit consists of a microstrip dipole antenna, a stripline impedance matching circuit, and a stripline low pass filter to prevent transmission of higher harmonics created by the rectifying diode fabricated on an Alumina substrate. The rectifying diode is the gate to source junction of a 6H Sic MESFET and the capacitor and load resistor are chip elements that are each bonded to the Alumina substrate. Each element and the hybrid, rectenna circuit haw been characterized through 500 C.

Microoptomechanical sensor for intracranial pressure monitoring

NASA Astrophysics Data System (ADS)

Andreeva, A. V.; Luchinin, V. V.; Lutetskiy, N. A.; Sergushichev, A. N.

2014-12-01

The main idea of this research is the development of microoptomechanical sensor for intracranial pressure monitoring. Currently, the authors studied the scientific and technical knowledge in this field, as well as develop and test a prototype of microoptomechanical sensor for intracranial pressure (ICP) monitoring.

Methods and Systems for Configuring Sensor Acquisition Based on Pressure Steps

NASA Technical Reports Server (NTRS)

DeDonato, Mathew (Inventor)

2015-01-01

Technologies are provided for underwater measurements. A system includes an underwater vessels including: a plurality of sensors disposed thereon for measuring underwater properties; and a programmable controller configured to selectively activate the plurality of sensors based at least in part on underwater pressure. A user may program at what pressure ranges certain sensors are activated to measure selected properties, and may also program the ascent/descent rate of the underwater vessel, which is correlated with the underwater pressure.

Fiber optic photoelastic pressure sensor for high temperature gases

NASA Technical Reports Server (NTRS)

Wesson, Laurence N.; Redner, Alex S.; Baumbick, Robert J.

1990-01-01

A novel fiber optic pressure sensor based on the photoelastic effects has been developed for extremely high temperature gases. At temperatures varying from 25 to 650 C, the sensor experiences no change in the peak pressure of the transfer function and only a 10 percent drop in dynamic range. Refinement of the sensor has resulted in an optoelectronic interface and processor software which can calculate pressure values within 1 percent of full scale at any temperature within the full calibrated temperature range.

Thermoelectric Control Of Temperatures Of Pressure Sensors

NASA Technical Reports Server (NTRS)

Burkett, Cecil G., Jr.; West, James W.; Hutchinson, Mark A.; Lawrence, Robert M.; Crum, James R.

1995-01-01

Prototype controlled-temperature enclosure containing thermoelectric devices developed to house electronically scanned array of pressure sensors. Enclosure needed because (1) temperatures of transducers in sensors must be maintained at specified set point to ensure proper operation and calibration and (2) sensors sometimes used to measure pressure in hostile environments (wind tunnels in original application) that are hotter or colder than set point. Thus, depending on temperature of pressure-measurement environment, thermoelectric devices in enclosure used to heat or cool transducers to keep them at set point.

Miniature piezoresistive solid state integrated pressure sensors

NASA Technical Reports Server (NTRS)

Kahng, S. K.

1980-01-01

The characteristics of silicon pressure sensors with an ultra-small diaphragm are described. The pressure sensors utilize rectangular diaphragm as small as 0.0127 x 0.0254 cm and a p-type Wheatstone bridge consisting of diffused piezoresistive elements, 0.000254 cm by 0.00254 cm. These sensors exhibit as high as 0.5 MHz natural frequency and 1 mV/V/psi pressure sensitivity. Fabrication techniques and high frequency results from shock tube testing and low frequency comparison with microphones are presented.

Dimension towers of SICs. I. Aligned SICs and embedded tight frames

NASA Astrophysics Data System (ADS)

Appleby, Marcus; Bengtsson, Ingemar; Dumitru, Irina; Flammia, Steven

2017-11-01

Algebraic number theory relates SIC-POVMs in dimension d > 3 to those in dimension d(d - 2). We define a SIC in dimension d(d - 2) to be aligned to a SIC in dimension d if and only if the squares of the overlap phases in dimension d appear as a subset of the overlap phases in dimension d(d - 2) in a specified way. We give 19 (mostly numerical) examples of aligned SICs. We conjecture that given any SIC in dimension d, there exists an aligned SIC in dimension d(d - 2). In all our examples, the aligned SIC has lower dimensional equiangular tight frames embedded in it. If d is odd so that a natural tensor product structure exists, we prove that the individual vectors in the aligned SIC have a very special entanglement structure, and the existence of the embedded tight frames follows as a theorem. If d - 2 is an odd prime number, we prove that a complete set of mutually unbiased bases can be obtained by reducing an aligned SIC to this dimension.

Dual-mode operation of flexible piezoelectric polymer diaphragm for intracranial pressure measurement

NASA Astrophysics Data System (ADS)

Li, Chunyan; Wu, Pei-Ming; Shutter, Lori A.; Narayan, Raj K.

2010-02-01

The dual-mode operation of a polyvinylidene fluoride trifluoroethylene (PVDF-TrFE) piezoelectric polymer diaphragm, in a capacitive or resonant mode, is reported as a flexible intracranial pressure (ICP) sensor. The pressure sensor using a capacitive mode exhibits a higher linearity and less power consumption than resonant mode operated pressure sensor. In contrast, the latter provides better sensitivity and easier adaption for wireless application. The metrological properties of the dual-mode ICP sensor being described are satisfactory in vitro. We propose that the piezoelectric polymer diaphragm has a promising future in intracranial pressure monitoring.

Non-destructive residual pressure self-measurement method for the sensing chip of optical Fabry-Perot pressure sensor.

PubMed

Wang, Xue; Wang, Shuang; Jiang, Junfeng; Liu, Kun; Zhang, Xuezhi; Xiao, Mengnan; Xiao, Hai; Liu, Tiegen

2017-12-11

We introduce a simple residual pressure self-measurement method for the Fabry-Perot (F-P) cavity of optical MEMS pressure sensor. No extra installation is required and the structure of the sensor is unchanged. In the method, the relationship between residual pressure and external pressure under the same diaphragm deflection condition at different temperatures is analyzed by using the deflection formula of the circular plate with clamped edges and the ideal gas law. Based on this, the residual pressure under the flat condition can be obtained by pressure scanning process and calculation process. We carried out the experiment to compare the residual pressures of two batches MEMS sensors fabricated by two kinds of bonding process. The measurement result indicates that our approach is reliable enough for the measurement.

Ceramic MEMS Designed for Wireless Pressure Monitoring in the Industrial Environment

PubMed Central

Pavlin, Marko; Belavic, Darko; Novak, Franc

2012-01-01

This paper presents the design of a wireless pressure-monitoring system for harsh-environment applications. Two types of ceramic pressure sensors made with a low-temperature cofired ceramic (LTCC) were considered. The first type is a piezoresistive strain gauge pressure sensor. The second type is a capacitive pressure sensor, which is based on changes of the capacitance values between two electrodes: one electrode is fixed and the other is movable under an applied pressure. The design was primarily focused on low power consumption. Reliable operation in the presence of disturbances, like electromagnetic interference, parasitic capacitances, etc., proved to be contradictory constraints. A piezoresistive ceramic pressure sensor with a high bridge impedance was chosen for use in a wireless pressure-monitoring system and an acceptable solution using energy-harvesting techniques has been achieved. The described solution allows for the integration of a sensor element with an energy harvester that has a printed thick-film battery and complete electronics in a single substrate packaged inside a compact housing. PMID:22368471

A flexible touch-pressure sensor array with wireless transmission system for robotic skin

NASA Astrophysics Data System (ADS)

Huang, Ying; Fang, Ding; Wu, Can; Wang, Weihua; Guo, Xiaohui; Liu, Ping

2016-06-01

Human skin contains multiple receptors and is able to sense various stimuli such as temperature, touch, pressure, and deformation, with high sensitivity and resolution. The development of skin-like sensors capable of sensing these stimuli is of great importance for various applications such as robots, touch detection, temperature monitoring, and strain gauges. Great efforts have been made to develop high performance touch sensor and pressure sensor. Compared with general sensor, the touch-pressure sensor which is reported in this paper not only can measure large pressure but also has a high resolution in the small range so that it can feel slight touch. The sensor has a vertical structure. The upper layer is made of silicone rubber as the capacitive layer and the lower layer employs multiwall carbon nanotubes and carbon black filled silicone rubber as the resistive layer. The electrodes are made by conductive silver adhesives. In addition, the electrodes are connected to the pads on the top surface of the flexible printed circuit board by enamelled wires which made it easier to fabricate sensor array. The resolution of the touch-pressure sensor in the range of 0-10 N and 10-100 N are 0.1 N and 1 N, respectively. The experimental data of the sensor are sent by ZigBee wireless technology which reduces the complexity of the wiring and provides a convenient way to apply and maintain the sensor array.

A flexible touch-pressure sensor array with wireless transmission system for robotic skin.

PubMed

Huang, Ying; Fang, Ding; Wu, Can; Wang, Weihua; Guo, Xiaohui; Liu, Ping

2016-06-01

Human skin contains multiple receptors and is able to sense various stimuli such as temperature, touch, pressure, and deformation, with high sensitivity and resolution. The development of skin-like sensors capable of sensing these stimuli is of great importance for various applications such as robots, touch detection, temperature monitoring, and strain gauges. Great efforts have been made to develop high performance touch sensor and pressure sensor. Compared with general sensor, the touch-pressure sensor which is reported in this paper not only can measure large pressure but also has a high resolution in the small range so that it can feel slight touch. The sensor has a vertical structure. The upper layer is made of silicone rubber as the capacitive layer and the lower layer employs multiwall carbon nanotubes and carbon black filled silicone rubber as the resistive layer. The electrodes are made by conductive silver adhesives. In addition, the electrodes are connected to the pads on the top surface of the flexible printed circuit board by enamelled wires which made it easier to fabricate sensor array. The resolution of the touch-pressure sensor in the range of 0-10 N and 10-100 N are 0.1 N and 1 N, respectively. The experimental data of the sensor are sent by ZigBee wireless technology which reduces the complexity of the wiring and provides a convenient way to apply and maintain the sensor array.

Electrical, Chemical, And Microstructural Analysis of the Thermal Stability of Nickel-based Ohmic Contacts to Silicon Carbide for High-Temperature Electronics

NASA Astrophysics Data System (ADS)

Virshup, Ariel R.

With increasing attention on curbing the emission of pollutants into the atmosphere, chemical sensors that can be used to monitor and control these unwanted emissions are in great demand. Examples include monitoring of hydrocarbons from automobile engines and monitoring of flue gases such as CO emitted from power plants. One of the critical limitations in high-temperature SiC gas sensors, however, is the degradation of the metal-SiC contacts over time. In this dissertation, we investigated the high-temperature stability of Pt/TaSix/Ni/SiC ohmic contacts, which have been implemented in SiC-based gas sensors developed for applications in diesel engines and power plants. The high-temperature stability of a Pt/TaSi2/Ni/SiC ohmic contact metallization scheme was characterized using a combination of current-voltage measurements, Auger electron spectroscopy, secondary ion mass spectrometry, and transmission electron microscope imaging and associated analytical techniques. Increasing the thicknesses of the Pt and TaSi2 layers promoted electrical stability of the contacts, which remained ohmic at 600°C in air for over 300 h; the specific contact resistance showed only a gradual increase from an initial value of 5.2 x 10-5 O-cm 2. We observed a continuous silicon-oxide layer in the thinner contact structures, which failed after 36 h of heating. It was found that the interface between TaSix and NiySi was weakened by the accumulation of free carbon (produced by the reaction of Ni and SiC), which in turn facilitated oxygen diffusion from the contact edges. Additional oxygen diffusion occurred along grain boundaries in the Pt overlayer. Meanwhile, thicker contacts, with less interfacial free carbon and enhanced electrical stability contained a much lower oxygen concentration that was distributed across the contact layers, precluding the formation of an electrically insulating contact structure.

Direct Printing of Stretchable Elastomers for Highly Sensitive Capillary Pressure Sensors.

PubMed

Liu, Wenguang; Yan, Chaoyi

2018-03-28

We demonstrate the successful fabrication of highly sensitive capillary pressure sensors using an innovative 3D printing method. Unlike conventional capacitive pressure sensors where the capacitance changes were due to the pressure-induced interspace variations between the parallel plate electrodes, in our capillary sensors the capacitance was determined by the extrusion and extraction of liquid medium and consequent changes of dielectric constants. Significant pressure sensitivity advances up to 547.9 KPa -1 were achieved. Moreover, we suggest that our innovative capillary pressure sensors can adopt a wide range of liquid mediums, such as ethanol, deionized water, and their mixtures. The devices also showed stable performances upon repeated pressing cycles. The direct and versatile printing method combined with the significant performance advances are expected to find important applications in future stretchable and wearable electronics.

Microwave fluid flow meter

DOEpatents

Billeter, Thomas R.; Philipp, Lee D.; Schemmel, Richard R.

1976-01-01

A microwave fluid flow meter is described utilizing two spaced microwave sensors positioned along a fluid flow path. Each sensor includes a microwave cavity having a frequency of resonance dependent upon the static pressure of the fluid at the sensor locations. The resonant response of each cavity with respect to a variation in pressure of the monitored fluid is represented by a corresponding electrical output which can be calibrated into a direct pressure reading. The pressure drop between sensor locations is then correlated as a measure of fluid velocity. In the preferred embodiment the individual sensor cavities are strategically positioned outside the path of fluid flow and are designed to resonate in two distinct frequency modes yielding a measure of temperature as well as pressure. The temperature response can then be used in correcting for pressure responses of the microwave cavity encountered due to temperature fluctuations.

Silicon carbide, an emerging high temperature semiconductor

NASA Technical Reports Server (NTRS)

Matus, Lawrence G.; Powell, J. Anthony

1991-01-01

In recent years, the aerospace propulsion and space power communities have expressed a growing need for electronic devices that are capable of sustained high temperature operation. Applications for high temperature electronic devices include development instrumentation within engines, engine control, and condition monitoring systems, and power conditioning and control systems for space platforms and satellites. Other earth-based applications include deep-well drilling instrumentation, nuclear reactor instrumentation and control, and automotive sensors. To meet the needs of these applications, the High Temperature Electronics Program at the Lewis Research Center is developing silicon carbide (SiC) as a high temperature semiconductor material. Research is focussed on developing the crystal growth, characterization, and device fabrication technologies necessary to produce a family of silicon carbide electronic devices and integrated sensors. The progress made in developing silicon carbide is presented, and the challenges that lie ahead are discussed.

Insight into the molecular basis of pathogen abundance: group A Streptococcus inhibitor of complement inhibits bacterial adherence and internalization into human cells.

PubMed

Hoe, Nancy P; Ireland, Robin M; DeLeo, Frank R; Gowen, Brian B; Dorward, David W; Voyich, Jovanka M; Liu, Mengyao; Burns, Eugene H; Culnan, Derek M; Bretscher, Anthony; Musser, James M

2002-05-28

Streptococcal inhibitor of complement (Sic) is a secreted protein made predominantly by serotype M1 Group A Streptococcus (GAS), which contributes to persistence in the mammalian upper respiratory tract and epidemics of human disease. Unexpectedly, an isogenic sic-negative mutant adhered to human epithelial cells significantly better than the wild-type parental strain. Purified Sic inhibited the adherence of a sic negative serotype M1 mutant and of non-Sic-producing GAS strains to human epithelial cells. Sic was rapidly internalized by human epithelial cells, inducing cell flattening and loss of microvilli. Ezrin and moesin, human proteins that functionally link the cytoskeleton to the plasma membrane, were identified as Sic-binding proteins by affinity chromatography and matrix-assisted laser desorption/ionization time-of-flight mass spectrometry analysis. Sic colocalized with ezrin inside epithelial cells and bound to the F-actin-binding site region located in the carboxyl terminus of ezrin and moesin. Synthetic peptides corresponding to two regions of Sic had GAS adherence-inhibitory activity equivalent to mature Sic and inhibited binding of Sic to ezrin. In addition, the sic mutant was phagocytosed and killed by human polymorphonuclear leukocytes significantly better than the wild-type strain, and Sic colocalized with ezrin in discrete regions of polymorphonuclear leukocytes. The data suggest that binding of Sic to ezrin alters cellular processes critical for efficient GAS contact, internalization, and killing. Sic enhances bacterial survival by enabling the pathogen to avoid the intracellular environment. This process contributes to the abundance of M1 GAS in human infections and their ability to cause epidemics.

Flexible pressure sensors for burnt skin patient monitoring

NASA Astrophysics Data System (ADS)

Hong, Gwang-Wook; Kim, Se-Hoon; Kim, Joo-Hyung

2015-04-01

To monitor hypertrophic scars in burnt skin we proposed and demonstrated a hybrid polymer/carbon tube-based flexible pressure sensor. To monitor the pressure on skin by measurement, we were focusing on the fabrication of a well-defined hybrid polydimethylsiloxsane/functionalized multi-walled carbon tube array formed on the patterned interdigital transducer in a controllable way for the application of flexible pressure sensing devices. As a result, the detection at the pressure of 20 mmHg is achieved, which is a suggested optimal value of resistance for sensing pressure. It should be noted that the achieved value of resistance at the pressure of 20 mmHg is highly desirable for the further development of sensitive flexible pressure sensors. In addition we demonstrate a feasibility of a wearable pressure sensor which can be in real-time detection of local pressure by wireless communication module. Keywords:

A comparative study on electrical characteristics of 1-kV pnp and npn SiC bipolar junction transistors

NASA Astrophysics Data System (ADS)

Okuda, Takafumi; Kimoto, Tsunenobu; Suda, Jun

2018-04-01

We investigate the electrical characteristics of 1-kV pnp SiC bipolar junction transistors (BJTs) and compare them with those of npn SiC BJTs. The base resistance, current gain, and blocking capability are characterized. It is found that the base resistance of pnp SiC BJTs is two orders of magnitude lower than that of npn SiC BJTs. However, the obtained current gains are low below unity in pnp SiC BJTs, whereas npn SiC BJTs exhibit a current gain of 14 without surface passivation. The reason for the poor current gain of pnp SiC BJTs is discussed.

Tests Of Array Of Flush Pressure Sensors

NASA Technical Reports Server (NTRS)

Larson, Larry J.; Moes, Timothy R.; Siemers, Paul M., III

1992-01-01

Report describes tests of array of pressure sensors connected to small orifices flush with surface of 1/7-scale model of F-14 airplane in wind tunnel. Part of effort to determine whether pressure parameters consisting of various sums, differences, and ratios of measured pressures used to compute accurately free-stream values of stagnation pressure, static pressure, angle of attack, angle of sideslip, and mach number. Such arrays of sensors and associated processing circuitry integrated into advanced aircraft as parts of flight-monitoring and -controlling systems.

Low Activation Joining of SiC/SiC Composites for Fusion Applications: Modeling Thermal and Irradiation-induced Swelling Effects on Integrity of Ti3SiC2/SiC Joint

DOE Office of Scientific and Technical Information (OSTI.GOV)

Nguyen, Ba Nghiep; Henager, Charles H.; Kurtz, Richard J.

This work developed a continuum damage mechanics model that incorporates thermal expansion combined with irradiation-induced swelling effects to study the origin of cracking observed in recent irradiation experiments. Micromechanical modeling using an Eshelby-Mori-Tanaka approach was used to compute the thermoelastic properties of the Ti3SiC2/SiC joint needed for the model. In addition, a microstructural dual-phase Ti3SiC2/SiC model was developed to determine irradiation-induced swelling of the composite joint at a given temperature resulting from differential swelling of SiC and the Ti3SiC2 MAX phase. Three cases for the miniature torsion hourglass (THG) specimens containing a Ti3SiC2/SiC joint were analyzed corresponding to three irradiationmore » temperatures: 800oC, 500oC, and 400oC.« less

Optical fiber pressure sensor based on fiber Bragg grating

NASA Astrophysics Data System (ADS)

Song, Dongcao

In oil field, it is important to measure the high pressure and temperature for down-hole oil exploration and well-logging, the available traditional electronic sensor is challenged due to the harsh, flammable environment. Recently, applications based on fiber Bragg grating (FBG) sensor in the oil industry have become a popular research because of its distinguishing advantages such as electrically passive operation, immunity to electromagnetic interference, high resolution, insensitivity to optical power fluctuation etc. This thesis is divided into two main sections. In the first section, the design of high pressure sensor based on FBG is described. Several sensing elements based on FBG for high pressure measurements have been proposed, for example bulk-modulus or free elastic modulus. But the structure of bulk-modulus and free elastic modulus is relatively complex and not easy to fabricate. In addition, the pressure sensitivity is not high and the repeatability of the structure has not been investigated. In this thesis, a novel host material of carbon fiber laminated composite (CFLC) for high pressure sensing is proposed. The mechanical characteristics including principal moduli in three directions and the shape repeatability are investigated. Because of it's Young's modulus in one direction and anisotropic characteristics, the pressure sensor made by CFLC has excellent sensitivity. This said structure can be used in very high pressure measurement due to carbon fiber composite's excellent shape repetition even under high pressure. The experimental results show high pressure sensitivity of 0.101nm/MPa and high pressure measurement up to 70MPa. A pressure sensor based on CFLC and FBG with temperature compensation has been designed. In the second section, the design of low pressure sensor based on FBG is demonstrated. Due to the trade off between measurement range and sensitivity, a sensor for lower pressure range needs more sensitivity. A novel material of carbon fiber ribbon-wound composite cylindrical shell is proposed. The mechanical characteristics are analyzed. Due to the smaller longitudinal Young's modulus of this novel material, the sensitivity is improved to 0.452nm/MPa and the measurement range can reach 8MPa. The experimental results indicated excellent repeatability of the material and a good linearity between Bragg wavelength shift and the applied pressure. The sensor has the potential to find many industrial low pressure applications.

Development, Fabrication, and Characterization of Hydrogel Based Piezoresistive Pressure Sensors with Perforated Diaphragms

PubMed Central

Orthner, M.P.; Buetefisch, Sebastian; Magda, J.; Rieth, L.W.; Solzbacher, F.

2010-01-01

Hydrogels have been demonstrated to swell in response to a number of external stimuli including pH, CO2, glucose, and ionic strength making them useful for detection of metabolic analytes. To measure hydrogel swelling pressure, we have fabricated and tested novel perforated diaphragm piezoresistive pressure sensor arrays that couple the pressure sensing diaphragm with a perforated semi-permeable membrane. The 2×2 arrays measure approximately 3 × 5 mm2 and consist of four square sensing diaphragms with widths of 1.0, 1.25, and 1.5 mm used to measure full scale pressures of 50, 25, and 5 kPa, respectively. An optimized geometry of micro pores was etched in silicon diaphragm to allow analyte diffusion into the sensor cavity where the hydrogel material is located. The 14-step front side wafer process was carried out by a commercial foundry service (MSF, Frankfurt (Oder), Germany) and diaphragm pores were created using combination of potassium hydroxide (KOH) etching and deep reactive ion etching (DRIE). Sensor characterization was performed (without the use of hydrogels) using a custom bulge testing apparatus that simultaneously measured deflection, pressure, and electrical output. Test results are used to quantify the sensor sensitivity and demonstrate proof-of-concept. Simulations showed that the sensitivity was slightly improved for the perforated diaphragm designs while empirical electrical characterization showed that the perforated diaphragm sensors were slightly less sensitive than solid diaphragm sensors. This discrepancy is believed to be due to the influence of compressive stress found within passivation layers and poor etching uniformity. The new perforated diaphragm sensors were fully functional with sensitivities ranging from 23 to 252 μV/V-kPa (FSO= 5 to 80mV), and show a higher nonlinearity at elevated pressures than identical sensors with solid diaphragms. Sensors (1.5×1.5 mm2) with perforated diaphragms (pores=40 μm) have a nonlinearity of approximately 10% while for the identical solid diaphragm sensor it was roughly 3 % over the entire 200 kPa range. This is the first time piezoresistive pressure sensors with integrated diffusion pores for detection of hydrogel swelling pressure have been fabricated and tested. PMID:20657810

The Use of a Pressure-Indicating Sensor Film to Provide Feedback upon Hydrogel-Forming Microneedle Array Self-Application In Vivo.

PubMed

Vicente-Pérez, Eva M; Quinn, Helen L; McAlister, Emma; O'Neill, Shannon; Hanna, Lezley-Anne; Barry, Johanne G; Donnelly, Ryan F

2016-12-01

To evaluate the combination of a pressure-indicating sensor film with hydrogel-forming microneedle arrays, as a method of feedback to confirm MN insertion in vivo. Pilot in vitro insertion studies were conducted using a Texture Analyser to insert MN arrays, coupled with a pressure-indicating sensor film, at varying forces into excised neonatal porcine skin. In vivo studies involved twenty human volunteers, who self-applied two hydrogel-forming MN arrays, one with a pressure-indicating sensor film incorporated and one without. Optical coherence tomography was employed to measure the resulting penetration depth and colorimetric analysis to investigate the associated colour change of the pressure-indicating sensor film. Microneedle insertion was achieved in vitro at three different forces, demonstrating the colour change of the pressure-indicating sensor film upon application of increasing pressure. When self-applied in vivo, there was no significant difference in the microneedle penetration depth resulting from each type of array, with a mean depth of 237 μm recorded. When the pressure-indicating sensor film was present, a colour change occurred upon each application, providing evidence of insertion. For the first time, this study shows how the incorporation of a simple, low-cost pressure-indicating sensor film can indicate microneedle insertion in vitro and in vivo, providing visual feedback to assure the user of correct application. Such a strategy may enhance usability of a microneedle device and, hence, assist in the future translation of the technology to widespread clinical use.

High precision silicon piezo resistive SMART pressure sensor

NASA Astrophysics Data System (ADS)

Brown, Rod

2005-01-01

Instruments for test and calibration require a pressure sensor that is precise and stable. Market forces also dictate a move away from single measurand test equipment and, certainly in the case of pressure, away from single range equipment. A pressure `module' is required which excels in pressure measurement but is interchangble with sensors for other measurands. A communications interface for such a sensor has been specified. Instrument Digital Output Sensor (IDOS) that permits this interchanagability and allows the sensor to be inside or outside the measuring instrument. This paper covers the design and specification of a silicon diaphragm piezo resistive SMART sensor using this interface. A brief history of instrument sensors will be given to establish the background to this development. Design choices of the silicon doping, bridge energisation method, temperature sensing, signal conversion, data processing, compensation method, communications interface will be discussed. The physical format of the `in-instrument' version will be shown and then extended to the packaging design for the external version. Test results will show the accuracy achieved exceeds the target of 0.01%FS over a range of temperatures.

A hybrid electronically scanned pressure module for cryogenic environments

NASA Technical Reports Server (NTRS)

Chapman, J. J.; Hopson, P., Jr.; Kruse, N.

1995-01-01

Pressure is one of the most important parameters measured when testing models in wind tunnels. For models tested in the cryogenic environment of the National Transonic Facility at NASA Langley Research Center, the technique of utilizing commercially available multichannel pressure modules inside the models is difficult due to the small internal volume of the models and the requirement of keeping the pressure transducer modules within an acceptable temperature range well above the -173 degrees C tunnel temperature. A prototype multichannel pressure transducer module has been designed and fabricated with stable, repeatable sensors and materials optimized for reliable performance in the cryogenic environment. The module has 16 single crystal silicon piezoresistive pressure sensors electrostatically bonded to a metalized Pyrex substrate for sensing the wind tunnel model pressures. An integral temperature sensor mounted on each silicon micromachined pressure sensor senses real-time temperature fluctuations to within 0.1 degrees C to correct for thermally induced non-random sensor drift. The data presented here are from a prototype sensor module tested in the 0.3 M cryogenic tunnel and thermal equilibrium conditions in an environmental chamber which approximates the thermal environment (-173 degrees C to +60 degrees C) of the National Transonic Facility.

Fiber-optic liquid level sensor

DOEpatents

Weiss, Jonathan D.

1991-01-01

A fiber-optic liquid level sensor measures the height of a column of liquid through the hydrostatic pressure it produces. The sensor employs a fiber-optic displacement sensor to detect the pressure-induced displacement of the center of a corrugated diaphragm.

A silicon micromachined resonant pressure sensor

NASA Astrophysics Data System (ADS)

Tang, Zhangyang; Fan, Shangchun; Cai, Chenguang

2009-09-01

This paper describes the design, fabrication and test of a silicon micromachined resonant pressure sensor. A square membrane and a doubly clamped resonant beam constitute a compound structure. The former senses the pressure directly, while the latter changes its resonant frequency according to deformation of the membrane. The final output relation between the resonant frequency and the applied pressure is deducted according to the structure mechanical properties. Sensors are fabricated by micromachining technology, and then sealed in vaccum. These sensors are tested by open-loop and close-loop system designed on purpose. The experiment results demonstrate that the sensor has a sensitivity of 49.8Hz/kPa and repeatability of 0.08%.

Diffraction Studies of the Atomic Vibrations of Bulk and Surface Atoms in the Reciprocal and Real Spaces of Nanocrystalline SiC

NASA Technical Reports Server (NTRS)

Stelmakh, S.; Grzanka, E.; Weber, H.-P.; Vogel, S.; Palosz, B.; Palosz, B.

2004-01-01

To describe and evaluate the vibrational properties of nanoparticles it is necessary to distinguish between the surface and the core of the particles. Theoretical calculations show that vibrational density of states of the inner atoms of nanograins is similar to bulk material but shifted to higher energies which can be explained by the fact that the gain core is stressed (hardened) due to the presence of internal pressure. Theoretical calculations also show that there is a difference between vibrational properties of a crystal lattice of the grain interior in isolated particles and in a dense (sintered) nanocrystalline material. This is probably due to a coupling of the modes inside the grains via the grain boundaries in dense nanocrystalline bodies. We examined strains present in the surface shell based on examination of diamond and Sic nanocrystals in reciprocal (Bragg-type scattering) and real (PDF analysis) space analysis of neutron diffraction data. Recently we examined the atomic thermal motions in nanocrystalline Sic based on the assumption of a simple Einstein model for uncorrelated atomic notions. According to this model, the Bragg intensity is attenuated as a function of scattering angle by the Debye-Waller factor. Based on this assumption overall temperature factors were determined from the Wilson plots.

Taguchi Analysis on the Effect of Process Parameters on Densification During Spark Plasma Sintering of HfB2-20SiC (Preprint)

DTIC Science & Technology

2011-11-01

30 kN pressure and heating rate of 100 K/min. Introduction Boride , carbides and nitrides of the group IVB and VB transition metals are considered...10. Sciti D., Silvestroni L., Nygren M. Spark plasma sintering of Zr- and Hf- borides with decreasing amounts of MoSi2 as sintering aid Journal of

Flat-plate solar array project. Task 1: Silicon material: Investigation of the hydrochlorination of SiC1sub4

NASA Technical Reports Server (NTRS)

Mui, J. Y. P.

1981-01-01

A two inch-diameter stainless steel reactor was designed to operate at pressure up to 500 psig and at temperature up to 600 C in order to study the hydrochlorination of silicon tetrachloride and metallurgical grade (m.g.) silicon metal to trichlorosilane. The hydrochlorination apparatus is described and operation safety and pollution control are discussed.

Flexible Ferroelectric Sensors with Ultrahigh Pressure Sensitivity and Linear Response over Exceptionally Broad Pressure Range.

PubMed

Lee, Youngoh; Park, Jonghwa; Cho, Soowon; Shin, Young-Eun; Lee, Hochan; Kim, Jinyoung; Myoung, Jinyoung; Cho, Seungse; Kang, Saewon; Baig, Chunggi; Ko, Hyunhyub

2018-04-24

Flexible pressure sensors with a high sensitivity over a broad linear range can simplify wearable sensing systems without additional signal processing for the linear output, enabling device miniaturization and low power consumption. Here, we demonstrate a flexible ferroelectric sensor with ultrahigh pressure sensitivity and linear response over an exceptionally broad pressure range based on the material and structural design of ferroelectric composites with a multilayer interlocked microdome geometry. Due to the stress concentration between interlocked microdome arrays and increased contact area in the multilayer design, the flexible ferroelectric sensors could perceive static/dynamic pressure with high sensitivity (47.7 kPa -1 , 1.3 Pa minimum detection). In addition, efficient stress distribution between stacked multilayers enables linear sensing over exceptionally broad pressure range (0.0013-353 kPa) with fast response time (20 ms) and high reliability over 5000 repetitive cycles even at an extremely high pressure of 272 kPa. Our sensor can be used to monitor diverse stimuli from a low to a high pressure range including weak gas flow, acoustic sound, wrist pulse pressure, respiration, and foot pressure with a single device.

Temperature-independent fiber-Bragg-grating-based atmospheric pressure sensor

NASA Astrophysics Data System (ADS)

Zhang, Zhiguo; Shen, Chunyan; Li, Luming

2018-03-01

Atmospheric pressure is an important way to achieve a high degree of measurement for modern aircrafts, moreover, it is also an indispensable parameter in the meteorological telemetry system. With the development of society, people are increasingly concerned about the weather. Accurate and convenient atmospheric pressure parameters can provide strong support for meteorological analysis. However, electronic atmospheric pressure sensors currently in application suffer from several shortcomings. After an analysis and discussion, we propose an innovative structural design, in which a vacuum membrane box and a temperature-independent strain sensor based on an equal strength cantilever beam structure and fiber Bragg grating (FBG) sensors are used. We provide experimental verification of that the atmospheric pressure sensor device has the characteristics of a simple structure, lack of an external power supply, automatic temperature compensation, and high sensitivity. The sensor system has good sensitivity, which can be up to 100 nm/MPa, and repeatability. In addition, the device exhibits desired hysteresis.

Micromachined pressure sensors: Review and recent developments

DOE Office of Scientific and Technical Information (OSTI.GOV)

Eaton, W.P.; Smith, J.H.

1997-03-01

Since the discovery of piezoresistivity in silicon in the mid 1950s, silicon-based pressure sensors have been widely produced. Micromachining technology has greatly benefited from the success of the integrated circuits industry, burrowing materials, processes, and toolsets. Because of this, microelectromechanical systems (MEMS) are now poised to capture large segments of existing sensor markets and to catalyze the development of new markets. Given the emerging importance of MEMS, it is instructive to review the history of micromachined pressure sensors, and to examine new developments in the field. Pressure sensors will be the focus of this paper, starting from metal diaphragm sensorsmore » with bonded silicon strain gauges, and moving to present developments of surface-micromachined, optical, resonant, and smart pressure sensors. Considerations for diaphragm design will be discussed in detail, as well as additional considerations for capacitive and piezoresistive devices.« less

Design of Diaphragm and Coil for Stable Performance of an Eddy Current Type Pressure Sensor.

PubMed

Lee, Hyo Ryeol; Lee, Gil Seung; Kim, Hwa Young; Ahn, Jung Hwan

2016-07-01

The aim of this work was to develop an eddy current type pressure sensor and investigate its fundamental characteristics affected by the mechanical and electrical design parameters of sensor. The sensor has two key components, i.e., diaphragm and coil. On the condition that the outer diameter of sensor is 10 mm, two key parts should be designed so as to keep a good linearity and sensitivity. Experiments showed that aluminum is the best target material for eddy current detection. A round-grooved diaphragm is suggested in order to measure more precisely its deflection caused by applied pressures. The design parameters of a round-grooved diaphragm can be selected depending on the measuring requirements. A developed pressure sensor with diaphragm of t = 0.2 mm and w = 1.05 mm was verified to measure pressure up to 10 MPa with very good linearity and errors of less than 0.16%.

Optical fiber pressure sensors for adaptive wings

NASA Astrophysics Data System (ADS)

Duncan, Paul G.; Jones, Mark E.; Shinpaugh, Kevin A.; Poland, Stephen H.; Murphy, Kent A.; Claus, Richard O.

1997-06-01

Optical fiber pressure sensors have been developed for use on a structurally-adaptive `smart wing'; further details of the design, fabrication and testing of the smart wing concept are presented in companion papers. This paper describes the design, construction, and performance of the pressure sensor and a combined optical and electronic signal processing system implemented to permit the measurement of a large number of sensors distributed over the control surfaces of a wing. Optical fiber pressure sensors were implemented due to anticipated large electromagnetic interference signals within the operational environment. The sensors utilized the principle of the extrinsic Fabry-Perot interferometer (EFPI) already developed for the measurement of strain and temperature. Here, the cavity is created inside a micromachined hollow-core tube with a silicon diaphragm at one end. The operation of the sensor is similar to that of the EFPI strain gage also discussed in several papers at this conference. The limitations placed upon the performance of the digital signal processing system were determined by the required pressure range of the sensors and the cycle time of the control system used to adaptively modify the shape of the wing. Sensor calibration and the results of testing performed are detailed.

High resolution gas volume change sensor

DOE Office of Scientific and Technical Information (OSTI.GOV)

Dirckx, Joris J. J.; Aernouts, Jef E. F.; Aerts, Johan R. M.

2007-05-15

Changes of gas quantity in a system can be measured either by measuring pressure changes or by measuring volume changes. As sensitive pressure sensors are readily available, pressure change is the commonly used technique. In many physiologic systems, however, buildup of pressure influences the gas exchange mechanisms, thus changing the gas quantity change rate. If one wants to study the gas flow in or out of a biological gas pocket, measurements need to be done at constant pressure. In this article we present a highly sensitive sensor for quantitative measurements of gas volume change at constant pressure. The sensor ismore » based on optical detection of the movement of a droplet of fluid enclosed in a capillary. The device is easy to use and delivers gas volume data at a rate of more than 15 measurements/s and a resolution better than 0.06 {mu}l. At the onset of a gas quantity change the sensor shows a small pressure artifact of less than 15 Pa, and at constant change rates the pressure artifact is smaller than 10 Pa or 0.01% of ambient pressure.« less

Ultra fast all-optical fiber pressure sensor for blast event evaluation

NASA Astrophysics Data System (ADS)

Wu, Nan; Wang, Wenhui; Tian, Ye; Niezrecki, Christopher; Wang, Xingwei

2011-05-01

Traumatic brain injury (TBI) is a great potential threat to soldiers who are exposed to explosions or athletes who receive cranial impacts. Protecting people from TBI has recently attracted a significant amount of attention due to recent military operations in the Middle East. Recording pressure transient data in a blast event is very critical to the understanding of the effects of blast events on TBI. However, due to the fast change of the pressure during blast events, very few sensors have the capability to effectively track the dynamic pressure transients. This paper reports an ultra fast, miniature and all-optical fiber pressure sensor which could be mounted at different locations of a helmet to measure the fast changing pressure simultaneously. The sensor is based on Fabry-Perot (FP) principle. The end face of the fiber is wet etched. A well controlled thickness silicon dioxide diaphragm is thermal bonded on the end face to form an FP cavity. A shock tube test was conducted at Natick Soldier Research Development and Engineering Center, where the sensors were mounted in a shock tube side by side with a reference sensor to measure the rapidly changing pressure. The results of the test demonstrated that the sensor developed had an improved rise time (shorter than 0.4 μs) when compared to a commercially available reference sensor.

Microstructure and Dielectric Properties of LPCVD/CVI-SiBCN Ceramics Annealed at Different Temperatures

PubMed Central

Li, Jianping; Zhao, Mingxi; Liu, Yongsheng; Chai, Nan; Ye, Fang; Qin, Hailong; Cheng, Laifei; Zhang, Litong

2017-01-01

SiBCN ceramics were introduced into porous Si3N4 ceramics via a low-pressure chemical vapor deposition and infiltration (LPCVD/CVI) technique, and then the composite ceramics were heat-treated from 1400 °C to 1700 °C in a N2 atmosphere. The effects of annealing temperatures on microstructure, phase evolution, dielectric properties of SiBCN ceramics were investigated. The results revealed that α-Si3N4 and free carbon were separated below 1700 °C, and then SiC grains formed in the SiBCN ceramic matrix after annealing at 1700 °C through a phase-reaction between free carbon and α-Si3N4. The average dielectric loss of composites increased from 0 to 0.03 due to the formation of dispersive SiC grains and the increase of grain boundaries. PMID:28773015

Silicon carbide whisker reinforced ceramic composites and method for making same

DOEpatents

Wei, George C.

1993-01-01

The present invention is directed to the fabrication of ceramic composites which possess improved mechanical properties especially increased fracture toughness. In the formation of these ceramic composites, the single crystal SiC whiskers are mixed with fine ceramic powders of a ceramic material such as Al.sub.2 O.sub.3, mullite, or B.sub.4 C. The mixtures which contain a homogeneous disperson of the SiC whiskers are hot pressed at pressures in a range of about 28 to 70 MPa and temperatures in the range of about 1600.degree. to 1950.degree. C. with pressing times varying from about 0.075 to 2.5 hours. The resulting ceramic composites show an increase in fracture toughness of up to about 9 MPa.m.sup.1/2 which represents as much as a two-fold increase over that of the matrix material.

Silicon carbide whisker reinforced composites and method for making same

DOEpatents

Wei, G.C.

1984-02-09

The present invention is directed to the fabrication of ceramic composites which possess improved mechanical properties, especially increased fracture toughness. In the formation of these ceramic composites, the single-crystal SiC whiskers are mixed with fine ceramic powders of a ceramic material such as Al/sub 2/O/sub 3/, mullite, or B/sub 4/C. The mixtures which contain a homogeneous dispersion of the SiC whiskers are hot pressed at pressures in a range of about 28 to 70 MPa and temperatures in the range of about 1600 to 1950/sup 0/C with pressing times varying from about 0.75 to 2.5 hours. The resulting ceramic composites show an increase in fracture toughness of up to about 9 MPa.m/sup 1/2/ which represents as much as a two-fold increase over that of the matrix material.

Silicon carbide whisker reinforced ceramic composites and method for making same

DOEpatents

Wei, George C.

1985-01-01

The present invention is directed to the fabrication of ceramic composites which possess improved mechanical properties especially increased fracture toughness. In the formation of these ceramic composites, the single crystal SiC whiskers are mixed with fine ceramic powders of a ceramic material such as Al.sub.2 O.sub.3, mullite, or B.sub.4 C. The mixtures which contain a homogeneous dispersion of the SiC whiskers are hot pressed at pressures in a range of about 28 to 70 MPa and temperatures in the range of about 1600.degree. to 1950.degree. C. with pressing times varying from about 0.75 to 2.5 hours. The resulting ceramic composites show an increase in fracture toughness of up to about 9 MPa.m.sup.1/2 which represents as much as a two-fold increase over that of the matrix material.

Silicon carbide whisker reinforced ceramic composites and method for making same

DOEpatents

Wei, George C.

1993-11-16

The present invention is directed to the fabrication of ceramic composites which possess improved mechanical properties especially increased fracture toughness. In the formation of these ceramic composites, the single crystal SiC whiskers are mixed with fine ceramic powders of a ceramic material such as Al.sub.2 O.sub.3, mullite, or B.sub.4 C. The mixtures which contain a homogeneous disperson of the SiC whiskers are hot pressed at pressures in a range of about 28 to 70 MPa and temperatures in the range of about 1600.degree. to 1950.degree. C. with pressing times varying from about 0.075 to 2.5 hours. The resulting ceramic composites show an increase in fracture toughness of up to about 9 MPa.m.sup.1/2 which represents as much as a two-fold increase over that of the matrix material.

Silicon carbide whisker reinforced ceramic composites and method for making same

DOEpatents

Wei, George C.

1989-01-24

The present invention is directed to the fabrication of ceramic composites which possess improved mechanical properties especially increased fracture toughness. In the formation of these ceramic composites, the single crystal SiC whiskers are mixed with fine ceramic powders of a ceramic material such as Al.sub.2 O.sub.3, mullite, or B.sub.4 C. The mixtures which contain a homogeneous disperson of the SiC whiskers are hot pressed at pressures in a range of about 28 to 70 MPa and temperatures in the range of about 1600.degree. to 1950.degree. C. with pressing times varying from about 0.75 to 2.5 hours. The resulting ceramic composites show an increase in fracture toughness of up to about 9 MP.am.sup.1/2 which represents as much as a two-fold increase over that of the matrix material.

Wearable Resistive Pressure Sensor Based on Highly Flexible Carbon Composite Conductors with Irregular Surface Morphology.

PubMed

Kim, Kang-Hyun; Hong, Soon Kyu; Jang, Nam-Su; Ha, Sung-Hun; Lee, Hyung Woo; Kim, Jong-Man

2017-05-24

Wearable pressure sensors are crucial building blocks for potential applications in real-time health monitoring, artificial electronic skins, and human-to-machine interfaces. Here we present a highly sensitive, simple-architectured wearable resistive pressure sensor based on highly compliant yet robust carbon composite conductors made of a vertically aligned carbon nanotube (VACNT) forest embedded in a polydimethylsiloxane (PDMS) matrix with irregular surface morphology. A roughened surface of the VACNT/PDMS composite conductor is simply formed using a sandblasted silicon master in a low-cost and potentially scalable manner and plays an important role in improving the sensitivity of resistive pressure sensor. After assembling two of the roughened composite conductors, our sensor shows considerable pressure sensitivity of ∼0.3 kPa -1 up to 0.7 kPa as well as stable steady-state responses under various pressures, a wide detectable range of up to 5 kPa before saturation, a relatively fast response time of ∼162 ms, and good reproducibility over 5000 cycles of pressure loading/unloading. The fabricated pressure sensor can be used to detect a wide range of human motions ranging from subtle blood pulses to dynamic joint movements, and it can also be used to map spatial pressure distribution in a multipixel platform (in a 4 × 4 pixel array).

Fabrication and Characteristics of an nc-Si/c-Si Heterojunction MOSFETs Pressure Sensor

PubMed Central

Zhao, Xiaofeng; Wen, Dianzhong; Li, Gang

2012-01-01

A novel nc-Si/c-Si heterojunction MOSFETs pressure sensor is proposed in this paper, with four p-MOSFETs with nc-Si/c-Si heterojunction as source and drain. The four p-MOSFETs are designed and fabricated on a square silicon membrane by CMOS process and MEMS technology where channel resistances of the four nc-Si/c-Si heterojunction MOSFETs form a Wheatstone bridge. When the additional pressure is P, the nc-Si/c-Si heterojunction MOSFETs pressure sensor can measure this additional pressure P. The experimental results show that when the supply voltage is 3 V, length-width (L:W) ratio is 2:1, and the silicon membrane thickness is 75 μm, the full scale output voltage of the pressure sensor is 15.50 mV at room temperature, and pressure sensitivity is 0.097 mV/kPa. When the supply voltage and L:W ratio are the same as the above, and the silicon membrane thickness is 45 μm, the full scale output voltage is 43.05 mV, and pressure sensitivity is 2.153 mV/kPa. Therefore, the sensor has higher sensitivity and good temperature characteristics compared to the traditional piezoresistive pressure sensor. PMID:22778646

Highly Sensitive and Patchable Pressure Sensors Mimicking Ion-Channel-Engaged Sensory Organs.

PubMed

Chun, Kyoung-Yong; Son, Young Jun; Han, Chang-Soo

2016-04-26

Biological ion channels have led to much inspiration because of their unique and exquisite operational functions in living cells. Specifically, their extreme and dynamic sensing abilities can be realized by the combination of receptors and nanopores coupled together to construct an ion channel system. In the current study, we demonstrated that artificial ion channel pressure sensors inspired by nature for detecting pressure are highly sensitive and patchable. Our ion channel pressure sensors basically consisted of receptors and nanopore membranes, enabling dynamic current responses to external forces for multiple applications. The ion channel pressure sensors had a sensitivity of ∼5.6 kPa(-1) and a response time of ∼12 ms at a frequency of 1 Hz. The power consumption was recorded as less than a few μW. Moreover, a reliability test showed stability over 10 000 loading-unloading cycles. Additionally, linear regression was performed in terms of temperature, which showed no significant variations, and there were no significant current variations with humidity. The patchable ion channel pressure sensors were then used to detect blood pressure/pulse in humans, and different signals were clearly observed for each person. Additionally, modified ion channel pressure sensors detected complex motions including pressing and folding in a high-pressure range (10-20 kPa).

A High-Temperature Piezoresistive Pressure Sensor with an Integrated Signal-Conditioning Circuit

PubMed Central

Yao, Zong; Liang, Ting; Jia, Pinggang; Hong, Yingping; Qi, Lei; Lei, Cheng; Zhang, Bin; Xiong, Jijun

2016-01-01

This paper focuses on the design and fabrication of a high-temperature piezoresistive pressure sensor with an integrated signal-conditioning circuit, which consists of an encapsulated pressure-sensitive chip, a temperature compensation circuit and a signal-conditioning circuit. A silicon on insulation (SOI) material and a standard MEMS process are used in the pressure-sensitive chip fabrication, and high-temperature electronic components are adopted in the temperature-compensation and signal-conditioning circuits. The entire pressure sensor achieves a hermetic seal and can be operated long-term in the range of −50 °C to 220 °C. Unlike traditional pressure sensor output voltage ranges (in the dozens to hundreds of millivolts), the output voltage of this sensor is from 0 V to 5 V, which can significantly improve the signal-to-noise ratio and measurement accuracy in practical applications of long-term transmission based on experimental verification. Furthermore, because this flexible sensor’s output voltage is adjustable, general follow-up pressure transmitter devices for voltage converters need not be used, which greatly reduces the cost of the test system. Thus, the proposed high-temperature piezoresistive pressure sensor with an integrated signal-conditioning circuit is expected to be highly applicable to pressure measurements in harsh environments. PMID:27322288

SiC-based Photo-detectors for UV, VUV, EUV and Soft X-ray Detection

NASA Technical Reports Server (NTRS)

Yan, Feng

2006-01-01

A viewgraph presentation describing an ideal Silicon Carbide detector for ultraviolet, vacuum ultraviolet, extreme ultraviolet and soft x-ray detection is shown. The topics include: 1) An ideal photo-detector; 2) Dark current density of SiC photodiodes at room temperature; 3) Dark current in SiC detectors; 4) Resistive and capacitive feedback trans-impedance amplifier; 5) Avalanche gain; 6) Excess noise; 7) SNR in single photon counting mode; 8) Structure of SiC single photon counting APD and testing structure; 9) Single photon counting waveform and testing circuit; 10) Amplitude of SiC single photon counter; 11) Dark count of SiC APD photon counters; 12) Temperature-dependence of dark count rate; 13) Reduce the dark count rate by reducing the breakdown electric field; 14) Spectrum range for SiC detectors; 15) QE curves of Pt/4H-SiC photodiodes; 16) QE curve of SiC; 17) QE curves of SiC photodiode vs. penetration depth; 18) Visible rejection of SiC photodiodes; 19) Advantages of SiC photodiodes; 20) Competitors of SiC detectors; 21) Extraterrestrial solar spectra; 22) Visible-blind EUV detection; 23) Terrestrial solar spectra; and 24) Less than 1KeV soft x-ray detection.

Effects of SiC on Properties of Cu-SiC Metal Matrix Composites

NASA Astrophysics Data System (ADS)

Efe, G. Celebi; Altinsoy, I.; Ipek, M.; Zeytin, S.; Bindal, C.

2011-12-01

This paper was focused on the effects of particle size and distribution on some properties of the SiC particle reinforced Cu composites. Copper powder produced by cementation method was reinforced with SiC particles having 1 and 30 μm particle size and sintered at 700 °C. SEM studies showed that SiC particles dispersed in copper matrix homogenously. The presence of Cu and SiC components in composites were verified by XRD analysis technique. The relative densities of Cu-SiC composites determined by Archimedes' principle are ranged from 96.2% to 90.9% for SiC with 1 μm particle size, 97.0 to 95.0 for SiC with 30 μm particle size. Measured hardness of sintered compacts varied from 130 to 155 HVN for SiC having 1 μm particle size, 188 to 229 HVN for SiC having 1 μm particle size. Maximum electrical conductivity of test materials was obtained as 80.0% IACS (International annealed copper standard) for SiC with 1 μm particle size and 83.0% IACS for SiC with 30 μm particle size.

A Seafloor Test of the A-0-A Approach to Calibrating Pressure Sensors for Vertical Geodesy

NASA Astrophysics Data System (ADS)

Wilcock, W. S. D.; Manalang, D.; Harrington, M.; Cram, G.; Tilley, J.; Burnett, J.; Martin, D.; Paros, J. M.

2017-12-01

Seafloor geodetic observations are critical for understanding the locking and slip of the megathrust in Cascadia and other subduction zones. Differences of bottom pressure time series have been used successfully in several subduction zones to detect slow-slip earthquakes centered offshore. Pressure sensor drift rates are much greater than the long-term rates of strain build-up and thus, in-situ calibration is required to measure secular strain. One approach to calibration is to use a dead-weight tester, a laboratory apparatus that produces an accurate reference pressure, to calibrate a pressure sensor deployed on the seafloor by periodically switching between the external pressure and the deadweight tester (Cook et al, this session). The A-0-A method replaces the dead weight tester by using the internal pressure of the instrument housing as the reference pressure. We report on the first non-proprietary ocean test of this approach on the MARS cabled observatory at a depth of 900 m depth in Monterey Bay. We use the Paroscientific Seismic + Oceanic Sensors module that is designed for combined geodetic, oceanographic and seismic observations. The module comprises a three-component broadband accelerometer, two pressure sensors that for this deployment measure ocean pressures, A, up to 2000 psia (14 MPa), and a barometer to measure the internal housing reference pressure, 0. A valve periodically switches between external and internal pressures for 5 minute calibrations. The seafloor test started in mid-June and the results of 30 calibrations collected over the first 6 weeks of operation are very encouraging. After correcting for variations in the internal temperature of the housing, the offset of the pressure sensors from the barometer reading as a function of time, can be fit with a straight line for each sensor with a rms misfit of 0.1 hPa (1 mm of water). The slopes of these lines (-4 cm/yr and -0.4 cm/yr) vary by an order of magnitude but the difference in the span (external minus internal pressure) of the two sensors is constant to 0.05 hPa. We will present the results for the first 6 months of A-0-A calibrations for vertical geodesy and also discuss the performance of the pressure sensors and accelerometer for monitoring seismic activity, tilt and ocean infragravity waves.

Evaluation of eating and rumination behaviour in cows using a noseband pressure sensor

PubMed Central

2013-01-01

Background An automated technique for recording eating and rumination behaviour was evaluated in ten lactating Brown Swiss cows by comparing data obtained from a pressure sensor with data obtained via direct observation over a 24-hour period. The recording device involved a pressure sensor integrated in the noseband of a halter. The analysed variables included number and duration of individual rumination, eating and resting phases, total daily length of these phases and number of cuds chewed per day. Results Eating and rumination phases were readily differentiated based on characteristic pressure profiles. Chewing movements during rumination were regular and generated regular waveforms with uniform amplitudes, whereas eating generated irregular waveforms with variable amplitudes. There was complete or almost complete agreement and no significant differences between data obtained via direct observation and pressure sensor technique. Both methods yielded an average of 16 daily eating phases with a mean duration of 28.3 minutes. Total time spent eating was 445.0 minutes for direct observation and 445.4 minutes for the pressure sensor technique. Both techniques recorded an average of 13.3 rumination phases with a mean duration of 30.3 (direct observation) and of 30.2 (pressure sensor) minutes. Total time spent ruminating per day, number of cuds per day and chewing cycles per cud were 389.3 and 388.3 minutes, 410.1 and 410.0 and 60.0 and 60.3 for direct observation and pressure sensor technique, respectively. There was a significant difference between the two methods with respect to mean number of chewing cycles per day (24′669, direct observation vs. 24′751, pressure sensor, P < 0.05, paired t-test). There were strong correlations between the two recording methods with correlation coefficients ranging from 0.98 to 1.00. Conclusions The results confirmed that measurements of eating and rumination variables obtained via the pressure sensor technique are in excellent agreement with data obtained via direct observation. PMID:23941142

Recent Improvement of Medical Optical Fibre Pressure and Temperature Sensors.

PubMed

Poeggel, Sven; Duraibabu, Dineshbabu; Kalli, Kyriacos; Leen, Gabriel; Dooly, Gerard; Lewis, Elfed; Kelly, Jimmy; Munroe, Maria

2015-07-13

This investigation describes a detailed analysis of the fabrication and testing of optical fibre pressure and temperature sensors (OFPTS). The optical sensor of this research is based on an extrinsic Fabry-Perot interferometer (EFPI) with integrated fibre Bragg grating (FBG) for simultaneous pressure and temperature measurements. The sensor is fabricated exclusively in glass and with a small diameter of 0.2 mm, making it suitable for volume-restricted bio-medical applications. Diaphragm shrinking techniques based on polishing, hydrofluoric (HF) acid and femtosecond (FS) laser micro-machining are described and analysed. The presented sensors were examined carefully and demonstrated a pressure sensitivity in the range of sp = 2-10 nm/kPa and a resolution of better than ΔP = 10 Pa protect (0.1 cm H2O). A static pressure test in 38 cm H2O shows no drift of the sensor in a six-day period. Additionally, a dynamic pressure analysis demonstrated that the OFPTS never exceeded a drift of more than 130 Pa (1.3 cm H2O) in a 12-h measurement, carried out in a cardiovascular simulator. The temperature sensitivity is given by k = 10.7 pm/K, which results in a temperature resolution of better than ΔT = 0.1 K. Since the temperature sensing element is placed close to the pressure sensing element, the pressure sensor is insensitive to temperature changes.

Recent Improvement of Medical Optical Fibre Pressure and Temperature Sensors

PubMed Central

Poeggel, Sven; Duraibabu, Dineshbabu; Kalli, Kyriacos; Leen, Gabriel; Dooly, Gerard; Lewis, Elfed; Kelly, Jimmy; Munroe, Maria

2015-01-01

This investigation describes a detailed analysis of the fabrication and testing of optical fibre pressure and temperature sensors (OFPTS). The optical sensor of this research is based on an extrinsic Fabry–Perot interferometer (EFPI) with integrated fibre Bragg grating (FBG) for simultaneous pressure and temperature measurements. The sensor is fabricated exclusively in glass and with a small diameter of 0.2 mm, making it suitable for volume-restricted bio-medical applications. Diaphragm shrinking techniques based on polishing, hydrofluoric (HF) acid and femtosecond (FS) laser micro-machining are described and analysed. The presented sensors were examined carefully and demonstrated a pressure sensitivity in the range of sp = 2–10 nmkPa and a resolution of better than ΔP = 10 Pa (0.1 cm H2O). A static pressure test in 38 cmH2O shows no drift of the sensor in a six-day period. Additionally, a dynamic pressure analysis demonstrated that the OFPTS never exceeded a drift of more than 130 Pa (1.3 cm H2O) in a 12-h measurement, carried out in a cardiovascular simulator. The temperature sensitivity is given by k=10.7 pmK, which results in a temperature resolution of better than ΔT = 0.1 K. Since the temperature sensing element is placed close to the pressure sensing element, the pressure sensor is insensitive to temperature changes. PMID:26184331

Rugged, no-moving-parts windspeed and static pressure probe designs for measurements in planetary atmospheres

NASA Technical Reports Server (NTRS)

Bedard, A. J., Jr.; Nishiyama, R. T.

1993-01-01

Instruments developed for making meteorological observations under adverse conditions on Earth can be applied to systems designed for other planetary atmospheres. Specifically, a wind sensor developed for making measurements within tornados is capable of detecting induced pressure differences proportional to wind speed. Adding strain gauges to the sensor would provide wind direction. The device can be constructed in a rugged form for measuring high wind speeds in the presence of blowing dust that would clog bearings and plug passages of conventional wind speed sensors. Sensing static pressure in the lower boundary layer required development of an omnidirectional, tilt-insensitive static pressure probe. The probe provides pressure inputs to a sensor with minimum error and is inherently weather-protected. The wind sensor and static pressure probes have been used in a variety of field programs and can be adapted for use in different planetary atmospheres.

33 CFR 154.2180 - Alternative testing program-Generally.

Code of Federal Regulations, 2014 CFR

2014-07-01

... Control Systems Alternative Analyzer and Pressure Sensor Reliability Testing § 154.2180 Alternative... and pressure sensor safety testing requirements provided by 33 CFR 154.2150(c) and 33 CFR 154.2250(c... 33 CFR 154.2181. (d) All pressure sensors/switches used in a VCS must be tested for safety system...

Electronically-Scanned Pressure Sensors

NASA Technical Reports Server (NTRS)

Coe, C. F.; Parra, G. T.; Kauffman, R. C.

1984-01-01

Sensors not pneumatically switched. Electronic pressure-transducer scanning system constructed in modular form. Pressure transducer modules and analog to digital converter module small enough to fit within cavities of average-sized wind-tunnel models. All switching done electronically. Temperature controlled environment maintained within sensor modules so accuracy maintained while ambient temperature varies.

Self-correcting electronically scanned pressure sensor

NASA Technical Reports Server (NTRS)

Gross, C. (Inventor)

1983-01-01

A multiple channel high data rate pressure sensing device is disclosed for use in wind tunnels, spacecraft, airborne, process control, automotive, etc., pressure measurements. Data rates in excess of 100,000 measurements per second are offered with inaccuracies from temperature shifts less than 0.25% (nominal) of full scale over a temperature span of 55 C. The device consists of thirty-two solid state sensors, signal multiplexing electronics to electronically address each sensor, and digital electronic circuitry to automatically correct the inherent thermal shift errors of the pressure sensors and their associated electronics.

High-temperature fiber optic pressure sensor

NASA Technical Reports Server (NTRS)

Berthold, J. W.

1984-01-01

Attention is given to a program to develop fiber optic methods to measure diaphragm deflection. The end application is intended for pressure transducers capable of operating to 540 C. In this paper are reported the results of a laboratory study to characterize the performance of the fiber-optic microbend sensor. The data presented include sensitivity and spring constant. The advantages and limitations of the microbend sensor for static pressure measurement applications are described. A proposed design is presented for a 540 C pressure transducer using the fiber optic microbend sensor.

Flexible, Highly Sensitive, and Wearable Pressure and Strain Sensors with Graphene Porous Network Structure.

PubMed

Pang, Yu; Tian, He; Tao, Luqi; Li, Yuxing; Wang, Xuefeng; Deng, Ningqin; Yang, Yi; Ren, Tian-Ling

2016-10-03

A mechanical sensor with graphene porous network (GPN) combined with polydimethylsiloxane (PDMS) is demonstrated by the first time. Using the nickel foam as template and chemically etching method, the GPN can be created in the PDMS-nickel foam coated with graphene, which can achieve both pressure and strain sensing properties. Because of the pores in the GPN, the composite as pressure and strain sensor exhibit wide pressure sensing range and highest sensitivity among the graphene foam-based sensors, respectively. In addition, it shows potential applications in monitoring or even recognize the walking states, finger bending degree, and wrist blood pressure.

Optical Pressure-Temperature Sensor for a Combustion Chamber

NASA Technical Reports Server (NTRS)

Wiley, John; Korman, Valentin; Gregory, Don

2008-01-01

A compact sensor for measuring temperature and pressure in a combusti on chamber has been proposed. The proposed sensor would include two optically birefringent, transmissive crystalline wedges: one of sapph ire (Al2O3) and one of magnesium oxide (MgO), the optical properties of both of which vary with temperature and pressure. The wedges wou ld be separated by a vapor-deposited thin-film transducer, which wou ld be primarily temperaturesensitive (in contradistinction to pressur e- sensitive) when attached to a crystalline substrate. The sensor w ould be housed in a rugged probe to survive the extreme temperatures and pressures in a combustion chamber.

Acceleration sensitivity of micromachined pressure sensors

NASA Astrophysics Data System (ADS)

August, Richard; Maudie, Theresa; Miller, Todd F.; Thompson, Erik

1999-08-01

Pressure sensors serve a variety of automotive applications, some which may experience high levels of acceleration such as tire pressure monitoring. To design pressure sensors for high acceleration environments it is important to understand their sensitivity to acceleration especially if thick encapsulation layers are used to isolate the device from the hostile environment in which they reside. This paper describes a modeling approach to determine their sensitivity to acceleration that is very general and is applicable to different device designs and configurations. It also describes the results of device testing of a capacitive surface micromachined pressure sensor at constant acceleration levels from 500 to 2000 g's.

A GENERIC PACKAGING TECHNIQUE USING FLUIDIC ISOLATION FOR LOW-DRIFT IMPLANTABLE PRESSURE SENSORS.

PubMed

Kim, A; Powell, C R; Ziaie, B

2015-06-01

This paper reports on a generic packaging method for reducing drift in implantable pressure sensors. The described technique uses fluidic isolation by encasing the pressure sensor in a liquid-filled medical-grade polyurethane balloon; thus, isolating it from surrounding aqueous environment that is the major source of baseline drift. In-vitro tests using commercial micromachined piezoresistive pressure sensors show an average baseline drift of 0.006 cmH 2 O/day (0.13 mmHg/month) for over 100 days of saline soak test, as compared to 0.101 cmH 2 O/day (2.23 mmHg/month) for a non-fluidic-isolated one soaked for 18 days. To our knowledge, this is the lowest reported drift for an implantable pressure sensor.

Online, In-Situ Monitoring Combustion Turbines Using Wireless Passive Ceramic Sensors

DOE Office of Scientific and Technical Information (OSTI.GOV)

Gong, Xun; An, Linan; Xu, Chengying

2013-06-30

The overall objective of this project is to develop high-temperature wireless passive ceramic sensors for online, real-time monitoring combustion turbines. During this project period, we have successfully demonstrated temperature sensors up to 1300°C and pressure sensors up to 800°C. The temperature sensor is based on a high-Q-factor dielectric resonator and the pressure sensor utilizes the evanescent-mode cavity to realize a pressure-sensitive high-Q-factor resonator. Both sensors are efficiently integrated with a compact antenna. These sensors are wirelessly interrogated. The resonant frequency change corresponding to either temperature or pressure can be identified using a time-domain gating technique. The sensors realized in thismore » project can survive harsh environments characterized by high temperatures (>1000°C) and corrosive gases, owing to the excellent material properties of polymer-derived ceramics (PDCs) developed at University of Central Florida. It is anticipated that this work will significantly advance the capability of high-temperature sensor technologies and be of a great benefit to turbine industry and their customers.« less

Nanocrystalline SiC and Ti 3SiC 2 Alloys for Reactor Materials: Diffusion of Fission Product Surrogates

DOE Office of Scientific and Technical Information (OSTI.GOV)

Henager, Charles H.; Jiang, Weilin

2014-11-01

MAX phases, such as titanium silicon carbide (Ti 3SiC 2), have a unique combination of both metallic and ceramic properties, which make them attractive for potential nuclear applications. Ti 3SiC 2 has been suggested in the literature as a possible fuel cladding material. Prior to the application, it is necessary to investigate diffusivities of fission products in the ternary compound at elevated temperatures. This study attempts to obtain relevant data and make an initial assessment for Ti 3SiC 2. Ion implantation was used to introduce fission product surrogates (Ag and Cs) and a noble metal (Au) in Ti 3SiC 2,more » SiC, and a dual-phase nanocomposite of Ti 3SiC 2/SiC synthesized at PNNL. Thermal annealing and in-situ Rutherford backscattering spectrometry (RBS) were employed to study the diffusivity of the various implanted species in the materials. In-situ RBS study of Ti 3SiC 2 implanted with Au ions at various temperatures was also performed. The experimental results indicate that the implanted Ag in SiC is immobile up to the highest temperature (1273 K) applied in this study; in contrast, significant out-diffusion of both Ag and Au in MAX phase Ti 3SiC 2 occurs during ion implantation at 873 K. Cs in Ti 3SiC 2 is found to diffuse during post-irradiation annealing at 973 K, and noticeable Cs release from the sample is observed. This study may suggest caution in using Ti 3SiC 2 as a fuel cladding material for advanced nuclear reactors operating at very high temperatures. Further studies of the related materials are recommended.« less

Active Temperature Compensation Using a High-Temperature, Fiber Optic, Hybrid Pressure and Temperature Sensor

NASA Astrophysics Data System (ADS)

Fielder, Robert S.; Palmer, Matthew E.; Davis, Matthew A.; Engelbrecht, Gordon P.

2006-01-01

Luna Innovations has developed a novel, fiber optic, hybrid pressure-temperature sensor system for extremely high-temperature environments that is capable of reliable operation up to 1050 °C. This system is based on the extremely high-temperature fiber optic sensors already demonstrated during previous work. The novelty of the sensors presented here lies in the fact that pressure and temperature are measured simultaneously with a single fiber and a single transducer. This hybrid approach will enable highly accurate active temperature compensation and sensor self-diagnostics not possible with other platforms. Hybrid pressure and temperature sensors were calibrated by varying both pressure and temperature. Implementing active temperature compensation resulted in a ten-fold reduction in the temperature-dependence of the pressure measurement. Sensors were tested for operability in a relatively high neutron dose environment up to 6.9×1017 n/cm2. In addition to harsh environment survivability, fiber optic sensors offer a number of intrinsic advantages for space nuclear power applications including extremely low mass, immunity to electromagnetic interference, self diagnostics / prognostics, and smart sensor capability. Deploying fiber optic sensors on future space exploration missions would provide a substantial improvement in spacecraft instrumentation. Additional development is needed, however, before these advantages can be realized. This paper will highlight recent demonstrations of fiber optic sensors in environments relevant to space nuclear applications. Successes and lessons learned will be highlighted. Additionally, development needs will be covered which will suggest a framework for a coherent plan to continue work in this area.

Integrated pressure and temperature sensor with high immunity against external disturbance for flexible endoscope operation

NASA Astrophysics Data System (ADS)

Maeda, Yusaku; Maeda, Kohei; Kobara, Hideki; Mori, Hirohito; Takao, Hidekuni

2017-04-01

In this study, an integrated pressure and temperature sensor device for a flexible endoscope with long-term stability in in vivo environments was developed and demonstrated. The sensor, which is embedded in the thin wall of the disposable endoscope hood, is intended for use in endoscopic surgery. The device surface is coated with a Cr layer to prevent photoelectronic generation induced by the strong light of the endoscope. The integrated temperature sensor allows compensation for the effect of the temperature drift on a pressure signal. The fabricated device pressure resolution is 0.4 mmHg; the corresponding pressure error is 3.2 mmHg. The packaged device was used in a surgical simulation in an animal experiment. Pressure and temperature monitoring was achieved even in a pH 1 acid solution. The device enables intraluminal pressure and temperature measurements of the stomach, which facilitate the maintenance of internal stomach conditions. The applicability of the sensor was successfully demonstrated in animal experiments.

Processing and Properties of SiC/MoSi2-SiC Composites Fabricated by Melt Infiltration

NASA Technical Reports Server (NTRS)

Bhatt, Ramakrishna T.; Hebsur, Mohan G.

2000-01-01

Hi-Nicalon SiC fiber reinforced MoSi2-SiC matrix composites (SiC/MoSi2-SiC) have been fabricated by the melt infiltration approach. The composite consists of approximately 60 vol%, 2-D woven BN/SiC coated Hi-Nicalon SiC fibers and approximately 40 vol% MoSi2-SiC matrix. The room temperature tensile properties and thermal conductivity of the SiC/MoSi2-SiC composites were measured and compared with those of the melt infiltrated SiC/SiC composites. The influence oi fiber architecture on tensile properties was also evaluated. Results indicate that the primary modulus, stress corresponding to deviation from linearity, and transverse thermal conductivity values for the SiC/MoSi2-SiC composites are significantly lower than those for the SiC/SiC composites. Microcracking of the matrix due to the large difference in thermal expansion between MoSi2 and SiC appears to be the reason for the lower matrix dominated properties of SiC/MoSi2-SiC composites.

Development of a conformable electronic skin based on silver nanowires and PDMS

NASA Astrophysics Data System (ADS)

Wang, Haopeng

2017-06-01

This paper presented the designed and tested a flexible and stretchable pressure sensor array that could be used to cover 3D surface to measure contact pressure. The sensor array is laminated into a thin film with 1 mm in thickness and can easily be stretched without losing its functionality. The fabricated sensor array contained 8×8 sensing elements, each could measure the pressure up to 180 kPa. An improved sandwich structure is used to build the sensor array. The upper and lower layers were PDMS thin films embedded with conductor strips formed by PDMS-based silver nanowires (AgNWs) networks covered with nano-scale thin metal film. The middle layer was formed a porous PDMS film inserted with circular conductive rubber. The sensor array could detect the contact pressure within 30% stretching rate. In this paper, the performance of the pressure sensor array was systematically studied. With the corresponding scanning power-supply circuit and data acquisition system, it is demonstrated that the system can successfully capture the tactile images induced by objects of different shapes. Such sensor system could be applied on complex surfaces in robots or medical devices for contact pressure detection and feedback.

Pressure sensor based on the fiber-optic extrinsic Fabry-Perot interferometer

NASA Astrophysics Data System (ADS)

Yu, Qingxu; Zhou, Xinlei

2011-03-01

Pressure sensors based on fiber-optic extrinsic Fabry-Perot interferometer (EFPI) have been extensively applied in various industrial and biomedical fields. In this paper, some key improvements of EFPI-based pressure sensors such as the controlled thermal bonding technique, diaphragm-based EFPI sensors, and white light interference technology have been reviewed. Recent progress on signal demodulation method and applications of EFPI-based pressure sensors has been introduced. Signal demodulation algorithms based on the cross correlation and mean square error (MSE) estimation have been proposed for retrieving the cavity length of EFPI. Absolute measurement with a resolution of 0.08 nm over large dynamic range has been carried out. For downhole monitoring, an EFPI and a fiber Bragg grating (FBG) cascade multiplexing fiber-optic sensor system has been developed, which can operate in temperature 300 °C with a good long-term stability and extremely low temperature cross-sensitivity. Diaphragm-based EFPI pressure sensors have been successfully used for low pressure and acoustic wave detection. Experimental results show that a sensitivity of 31 mV/Pa in the frequency range of 100 Hz to 12.7 kHz for aeroacoustic wave detection has been obtained.

Computational Modeling of Radiation Phenomenon in SiC for Nuclear Applications

NASA Astrophysics Data System (ADS)

Ko, Hyunseok

Silicon carbide (SiC) material has been investigated for promising nuclear materials owing to its superior thermo-mechanical properties, and low neutron cross-section. While the interest in SiC has been increasing, the lack of fundamental understanding in many radiation phenomena is an important issue. More specifically, these phenomena in SiC include the fission gas transport, radiation induced defects and its evolution, radiation effects on the mechanical stability, matrix brittleness of SiC composites, and low thermal conductivities of SiC composites. To better design SiC and SiC composite materials for various nuclear applications, understanding each phenomenon and its significance under specific reactor conditions is important. In this thesis, we used various modeling approaches to understand the fundamental radiation phenomena in SiC for nuclear applications in three aspects: (a) fission product diffusion through SiC, (b) optimization of thermodynamic stable self-interstitial atom clusters, (c) interface effect in SiC composite and their change upon radiation. In (a) fission product transport work, we proposed that Ag/Cs diffusion in high energy grain boundaries may be the upper boundary in unirradiated SiC at relevant temperature, and radiation enhanced diffusion is responsible for fast diffusion measured in post-irradiated fuel particles. For (b) the self-interstitial cluster work, thermodynamically stable clusters are identified as a function of cluster size, shape, and compositions using a genetic algorithm. We found that there are compositional and configurational transitions for stable clusters as the cluster size increases. For (c) the interface effect in SiC composite, we investigated recently proposed interface, which is CNT reinforced SiC composite. The analytical model suggests that CNT/SiC composites have attractive mechanical and thermal properties, and these fortify the argument that SiC composites are good candidate materials for the cladding. We used grand canonical monte carlo to optimize the interface, as a part of the stepping stone for further study using the interface.

Vibration modes interference in the MEMS resonant pressure sensor

NASA Astrophysics Data System (ADS)

Zhang, Fangfang; Li, Anlin; Bu, Zhenxiang; Wang, Lingyun; Sun, Daoheng; Du, Xiaohui; Gu, Dandan

2017-11-01

A new type of coupled balanced-mass double-ended tuning fork resonator (CBDETF) pressure sensor is fabricated and tested. However, the low accuracy of the CBDETF pressure sensor is not satisfied to us. Based on systematic analysis and tests, the coupling effect between the operational mode and interference mode is considered to be the main cause for the sensor in accuracy. To solve this problem, the stiffness of the serpentine beams is increased to pull up the resonant frequency of the interfering mode and make it separate far from the operational mode. Finally, the accuracy of the CBDETF pressure sensor is improved from + /-0.5% to less than + /-0.03% of the Full Scale (F.S.).

A miniature fiber optic pressure sensor for intradiscal pressure measurements of rodents

NASA Astrophysics Data System (ADS)

Nesson, Silas; Yu, Miao; Hsieh, Adam H.

2007-04-01

Lower back pain continues to be a leading cause of disability in people of all ages, and has been associated with degenerative disc disease. It is well accepted that mechanical stress, among other factors, can play a role in the development of disc degeneration. Pressures generated in the intervertebral disc have been measured both in vivo and in vitro for humans and animals. However, thus far it has been difficult to measure pressure experimentally in rodent discs due to their small size. With the prevalent use of rodent tail disc models in mechanobiology, it is important to characterize the intradiscal pressures generated with externally applied stresses. In this paper, a miniature fiber optic Fabry-Perot interferometric pressure sensor with an outer diameter of 360 μm was developed to measure intradiscal pressures in rat caudal discs. A low coherence interferometer based optical system was used, which includes a broadband light source, a high-speed spectrometer, and a Fabry-Perot sensor. The sensor employs a capillary tube, a flexible, polymer diaphragm coated with titanium as a partial mirror, and a fiber tip as another mirror. The pressure induced deformation of the diaphragm results in a cavity length change of the Fabry-Perot interferometer which can be calculated from the wavelength shift of interference fringes. The sensor exhibited good linearity with small applied pressures. Our validation experiments show that owing to the small size, inserting the sensor does not disrupt the annulus fibrosus and will not alter intradiscal pressures generated. Measurements also demonstrate the feasibility of using this sensor to quantify external load intradiscal pressure relationships in small animal discs.

Streptococcal inhibitor of complement (SIC) inhibits the membrane attack complex by preventing uptake of C567 onto cell membranes

PubMed Central

Fernie-King, Barbara A; Seilly, David J; Willers, Christine; Würzner, Reinhard; Davies, Alexandra; Lachmann, Peter J

2001-01-01

Streptococcal inhibitor of complement (SIC) was first described in 1996 as a putative inhibitor of the membrane attack complex of complement (MAC). SIC is a 31 000 MW protein secreted in large quantities by the virulent Streptococcus pyogenes strains M1 and M57, and is encoded by a gene which is extremely variable. In order to study further the interactions of SIC with the MAC, we have made a recombinant form of SIC (rSIC) in Escherichia coli and purified native M1 SIC which was used to raise a polyclonal antibody. SIC prevented reactive lysis of guinea pig erythrocytes by the MAC at a stage prior to C5b67 complexes binding to cell membranes, presumably by blocking the transiently expressed membrane insertion site on C7. The ability of SIC and clusterin (another putative fluid phase complement inhibitor) to inhibit complement lysis was compared, and found to be equally efficient. In parallel, by enzyme-linked immunosorbent assay both SIC and rSIC bound strongly to C5b67 and C5b678 complexes and to a lesser extent C5b-9, but only weakly to individual complement components. The implications of these data for virulence of SIC-positive streptococci are discussed, in light of the fact that Gram-positive organisms are already protected against complement lysis by the presence of their peptidoglycan cell walls. We speculate that MAC inhibition may not be the sole function of SIC. PMID:11454069

A transparent bending-insensitive pressure sensor

NASA Astrophysics Data System (ADS)

Lee, Sungwon; Reuveny, Amir; Reeder, Jonathan; Lee, Sunghoon; Jin, Hanbit; Liu, Qihan; Yokota, Tomoyuki; Sekitani, Tsuyoshi; Isoyama, Takashi; Abe, Yusuke; Suo, Zhigang; Someya, Takao

2016-05-01

Measuring small normal pressures is essential to accurately evaluate external stimuli in curvilinear and dynamic surfaces such as natural tissues. Usually, sensitive and spatially accurate pressure sensors are achieved through conformal contact with the surface; however, this also makes them sensitive to mechanical deformation (bending). Indeed, when a soft object is pressed by another soft object, the normal pressure cannot be measured independently from the mechanical stress. Here, we show a pressure sensor that measures only the normal pressure, even under extreme bending conditions. To reduce the bending sensitivity, we use composite nanofibres of carbon nanotubes and graphene. Our simulations show that these fibres change their relative alignment to accommodate bending deformation, thus reducing the strain in individual fibres. Pressure sensitivity is maintained down to a bending radius of 80 μm. To test the suitability of our sensor for soft robotics and medical applications, we fabricated an integrated sensor matrix that is only 2 μm thick. We show real-time (response time of ∼20 ms), large-area, normal pressure monitoring under different, complex bending conditions.

Wireless Prototype Based on Pressure and Bending Sensors for Measuring Gate Quality

PubMed Central

Grenez, Florent; Villarejo, María Viqueira; Zapirain, Begoña García; Zorrilla, Amaia Méndez

2013-01-01

This paper presents a technological solution based on sensors controlled remotely in order to monitor, track and evaluate the gait quality in people with or without associated pathology. Special hardware simulating a shoe was developed, which consists of three pressure sensors, two bending sensors, an Arduino mini and a Bluetooth module. The obtained signals are digitally processed, calculating the standard deviation and establishing thresholds obtained empirically. A group of users was chosen with the aim of executing two modalities: natural walking and dragging the left foot. The gait was parameterized with the following variables: as far as pressure sensors are concerned, one pressure sensor under the first metatarsal (right sensor), another one under the fifth metatarsal (left) and a third one under the heel were placed. With respect to bending sensors, one bending sensor was placed for the ankle movement and another one for the foot sole. The obtained results show a rate accuracy oscillating between 85% (right sensor) and 100% (heel and bending sensors). Therefore, the developed prototype is able to differentiate between healthy gait and pathological gait, and it will be used as the base of a more complex and integral technological solution, which is being developed currently. PMID:23899935

Wireless prototype based on pressure and bending sensors for measuring gait [corrected] quality.

PubMed

Grenez, Florent; Viqueira Villarejo, María; García Zapirain, Begoña; Méndez Zorrilla, Amaia

2013-07-29

This paper presents a technological solution based on sensors controlled remotely in order to monitor, track and evaluate the gait quality in people with or without associated pathology. Special hardware simulating a shoe was developed, which consists of three pressure sensors, two bending sensors, an Arduino mini and a Bluetooth module. The obtained signals are digitally processed, calculating the standard deviation and establishing thresholds obtained empirically. A group of users was chosen with the aim of executing two modalities: natural walking and dragging the left foot. The gait was parameterized with the following variables: as far as pressure sensors are concerned, one pressure sensor under the first metatarsal (right sensor), another one under the fifth metatarsal (left) and a third one under the heel were placed. With respect to bending sensors, one bending sensor was placed for the ankle movement and another one for the foot sole. The obtained results show a rate accuracy oscillating between 85% (right sensor) and 100% (heel and bending sensors). Therefore, the developed prototype is able to differentiate between healthy gait and pathological gait, and it will be used as the base of a more complex and integral technological solution, which is being developed currently.

Acoustic Detection Of Loose Particles In Pressure Sensors

NASA Technical Reports Server (NTRS)

Kwok, Lloyd C.

1995-01-01

Particle-impact-noise-detector (PIND) apparatus used in conjunction with computer program analyzing output of apparatus to detect extraneous particles trapped in pressure sensors. PIND tester essentially shaker equipped with microphone measuring noise in pressure sensor or other object being shaken. Shaker applies controlled vibration. Output of microphone recorded and expressed in terms of voltage, yielding history of noise subsequently processed by computer program. Data taken at sampling rate sufficiently high to enable identification of all impacts of particles on sensor diaphragm and on inner surfaces of sensor cavities.

Highly sensitive, self-powered and wearable electronic skin based on pressure-sensitive nanofiber woven fabric sensor.

PubMed

Zhou, Yuman; He, Jianxin; Wang, Hongbo; Qi, Kun; Nan, Nan; You, Xiaolu; Shao, Weili; Wang, Lidan; Ding, Bin; Cui, Shizhong

2017-10-11

The wearable electronic skin with high sensitivity and self-power has shown increasing prospects for applications such as human health monitoring, robotic skin, and intelligent electronic products. In this work, we introduced and demonstrated a design of highly sensitive, self-powered, and wearable electronic skin based on a pressure-sensitive nanofiber woven fabric sensor fabricated by weaving PVDF electrospun yarns of nanofibers coated with PEDOT. Particularly, the nanofiber woven fabric sensor with multi-leveled hierarchical structure, which significantly induced the change in contact area under ultra-low load, showed combined superiority of high sensitivity (18.376 kPa -1 , at ~100 Pa), wide pressure range (0.002-10 kPa), fast response time (15 ms) and better durability (7500 cycles). More importantly, an open-circuit voltage signal of the PPNWF pressure sensor was obtained through applying periodic pressure of 10 kPa, and the output open-circuit voltage exhibited a distinct switching behavior to the applied pressure, indicating the wearable nanofiber woven fabric sensor could be self-powered under an applied pressure. Furthermore, we demonstrated the potential application of this wearable nanofiber woven fabric sensor in electronic skin for health monitoring, human motion detection, and muscle tremor detection.