Broadband image sensor array based on graphene-CMOS integration

NASA Astrophysics Data System (ADS)

Goossens, Stijn; Navickaite, Gabriele; Monasterio, Carles; Gupta, Shuchi; Piqueras, Juan José; Pérez, Raúl; Burwell, Gregory; Nikitskiy, Ivan; Lasanta, Tania; Galán, Teresa; Puma, Eric; Centeno, Alba; Pesquera, Amaia; Zurutuza, Amaia; Konstantatos, Gerasimos; Koppens, Frank

2017-06-01

Integrated circuits based on complementary metal-oxide-semiconductors (CMOS) are at the heart of the technological revolution of the past 40 years, enabling compact and low-cost microelectronic circuits and imaging systems. However, the diversification of this platform into applications other than microcircuits and visible-light cameras has been impeded by the difficulty to combine semiconductors other than silicon with CMOS. Here, we report the monolithic integration of a CMOS integrated circuit with graphene, operating as a high-mobility phototransistor. We demonstrate a high-resolution, broadband image sensor and operate it as a digital camera that is sensitive to ultraviolet, visible and infrared light (300-2,000 nm). The demonstrated graphene-CMOS integration is pivotal for incorporating 2D materials into the next-generation microelectronics, sensor arrays, low-power integrated photonics and CMOS imaging systems covering visible, infrared and terahertz frequencies.

A Brief History of ... Semiconductors

ERIC Educational Resources Information Center

Jenkins, Tudor

2005-01-01

The development of studies in semiconductor materials is traced from its beginnings with Michael Faraday in 1833 to the production of the first silicon transistor in 1954, which heralded the age of silicon electronics and microelectronics. Prior to the advent of band theory, work was patchy and driven by needs of technology. However, the arrival…

On-chip photonic microsystem for optical signal processing based on silicon and silicon nitride platforms

NASA Astrophysics Data System (ADS)

Li, Yu; Li, Jiachen; Yu, Hongchen; Yu, Hai; Chen, Hongwei; Yang, Sigang; Chen, Minghua

2018-04-01

The explosive growth of data centers, cloud computing and various smart devices is limited by the current state of microelectronics, both in terms of speed and heat generation. Benefiting from the large bandwidth, promising low power consumption and passive calculation capability, experts believe that the integrated photonics-based signal processing and transmission technologies can break the bottleneck of microelectronics technology. In recent years, integrated photonics has become increasingly reliable and access to the advanced fabrication process has been offered by various foundries. In this paper, we review our recent works on the integrated optical signal processing system. We study three different kinds of on-chip signal processors and use these devices to build microsystems for the fields of microwave photonics, optical communications and spectrum sensing. The microwave photonics front receiver was demonstrated with a signal processing range of a full-band (L-band to W-band). A fully integrated microwave photonics transceiver without the on-chip laser was realized on silicon photonics covering the signal frequency of up 10 GHz. An all-optical orthogonal frequency division multiplexing (OFDM) de-multiplier was also demonstrated and used for an OFDM communication system with the rate of 64 Gbps. Finally, we show our work on the monolithic integrated spectrometer with a high resolution of about 20 pm at the central wavelength of 1550 nm. These proposed on-chip signal processing systems potential applications in the fields of radar, 5G wireless communication, wearable devices and optical access networks.

Grafting of functionalized polymer on porous silicon surface using Grignard reagent

NASA Astrophysics Data System (ADS)

Tighilt, F.-Z.; Belhousse, S.; Sam, S.; Hamdani, K.; Lasmi, K.; Chazalviel, J. N.; Gabouze, N.

2017-11-01

Recently, considerable attention has been paid to the manipulation and the control of the physicochemical properties of porous silicon surfaces because of their crucial importance to the modern microelectronics industry. Hybrid structures consisting of deposited polymer on porous silicon surfaces are important to applications in microelectronics, photovoltaics and sensors (Ensafi et al., 2016; Kashyout et al., 2015; Osorio et al.; 2015; Hejjo et al., 2002) [1-4]. In many cases, the polymer can provide excellent mechanical and chemical protection of the substrate, changes the electrochemical interface characteristics of the substrate, and provides new ways to the functionalization of porous silicon surfaces for molecular recognition and sensing. In this work, porous silicon surface was modified by anodic treatment in ethynylmagnesium bromide electrolyte leading to the formation of a polymeric layer bearing some bromine substituents. Subsequently, the formed polymer is functionalized with amine molecules containing functional groups (carboxylic acid or pyridine) by a substitution reaction between bromine sites and amine groups (Hofmann reaction). The chemical composition of the modified porous silicon surfaces was investigated and the grafting of polymeric chains and functional groups on the porous silicon surface was confirmed by Fourier transform infrared spectroscopy (FTIR) and X-ray photoelectron spectroscopy (XPS) which displayed the principal characteristic peaks attributed to the different functional groups. Furthermore, the surface of the material was examined by scanning electron microscopy (SEM).

Development and ESCC evaluation of a monolithic silicon phototransistor array for optical encoders

NASA Astrophysics Data System (ADS)

Bregoli, M.; Ceriani, S.; Erspan, M.; Collini, A.; Ficorella, F.; Giacomini, G.; Bellutti, P.; How, L. S.; Hernandez, S.; Lundmark, K.

2017-11-01

Optoelettronica Italia Srl, better known as Optoi, is an Italian Company dealing with optoelectronics and microelectronics and focusing on back-end technologies. The growing volume of activities concerning the aerospace field has recently brought to the creation of a company unit, with collaborations with ESA, CNES and ASI. In this context, Optoi's key partner for the microelectronic front-end is Fondazione Bruno Kessler (FBK) and specifically its Micro Nano Facility (MNF).

Self-formed cylindrical microcapillaries through surface migration of silicon and their application to single-cell analysis

NASA Astrophysics Data System (ADS)

Zeng, Fan; Luo, Yuan; Yobas, Levent; Wong, Man

2013-05-01

Surface migration of monocrystalline silicon has been applied to demonstrate self-formed cylindrical microcapillaries with diameters from 0.8 to 2.8 µm based on the microstructured substrate topography. The microcapillaries are entirely enclosed in silicon and can be conveniently etched to create fluidic access ports and microchannels for their subsequent integration into functional microfluidic devices. Moreover, the microcapillaries can be thermally oxidized through their access ports with silica walls remain intact upon release from surrounding silicon in an effort to enhance optical clarity. Straight microcapillaries and microcapillaries with perpendicular turns and crossings (junctions) have all been fabricated and validated for fluidic continuity with a fluorescein solution pumped through. The utility of the microcapillaries has been showcased on particle traps in which biological cells are probed for single-cell impedance spectroscopy. The approach disclosed, given its full compatibility with semiconductor device fabrication, offers great potential towards intelligent cell and molecule-based devices merging microelectronics and microfluidics.

The Development of Spectroscopic Techniques to Study Defects in Thin Film Silicon-Dioxide

NASA Astrophysics Data System (ADS)

Zvanut, Mary Ellen

This dissertation research concerns the study of defects in thin film sputtered SiO_2 which is used as an optical coating material. The capacitance-voltage and current-voltage techniques typically used in microelectronics investigations were used to examine the concentration, location, and kinetics of charge in an aluminum-sputtered oxide-native oxide-silicon capacitor. The response of the capacitor to low field bias stress reveals a hysteretic trapping behavior similar to that observed in microelectronic grade oxide films. In an effort to understand this phenomenon, a band-to-trap tunneling model was developed based on the assumption that the defect involved exhibits a delta function spatial distribution and an extended energy distribution. The central feature of this model, defect relaxation, provides a physical explanation for the hysteretic trapping behavior. Analysis yields that the trap is located spatially within 2 nm of the Si/SiO _2 interface and energetically less than 5 eV from the SiO_2 conduction band edge. The relaxation energy associated with the capture of an electron at the trap is 0.1-2.2 eV. Correlation of the electrical measurements executed for this investigation with electron paramagnetic resonance (EPR) data obtained by Dr. P. Caplan provides structural information about the defect involved with the hysteretic trapping phenomenon. EPR results obtained before and after subjecting an oxide-silicon structure to corona discharge suggest that the trapping center is an E^ ' defect. The technique of band-to-trap tunneling spectroscopy combined with the EPR experiments provides the first reported trap depth associated with the capture of a hole at an E^' center located near the silicon surface of an oxide/silicon system.

Method of forming crystalline silicon devices on glass

DOEpatents

McCarthy, Anthony M.

1995-01-01

A method for fabricating single-crystal silicon microelectronic components on a silicon substrate and transferring same to a glass substrate. This is achieved by utilizing conventional silicon processing techniques for fabricating components of electronic circuits and devices on bulk silicon, wherein a bulk silicon surface is prepared with epitaxial layers prior to the conventional processing. The silicon substrate is bonded to a glass substrate and the bulk silicon is removed leaving the components intact on the glass substrate surface. Subsequent standard processing completes the device and circuit manufacturing. This invention is useful in applications requiring a transparent or insulating substrate, particularly for display manufacturing. Other applications include sensors, actuators, optoelectronics, radiation hard electronics, and high temperature electronics.

Integrated Amorphous Silicon p-i-n Temperature Sensor for CMOS Photonics.

PubMed

Rao, Sandro; Pangallo, Giovanni; Della Corte, Francesco Giuseppe

2016-01-06

Hydrogenated amorphous silicon (a-Si:H) shows interesting optoelectronic and technological properties that make it suitable for the fabrication of passive and active micro-photonic devices, compatible moreover with standard microelectronic devices on a microchip. A temperature sensor based on a hydrogenated amorphous silicon p-i-n diode integrated in an optical waveguide for silicon photonics applications is presented here. The linear dependence of the voltage drop across the forward-biased diode on temperature, in a range from 30 °C up to 170 °C, has been used for thermal sensing. A high sensitivity of 11.9 mV/°C in the bias current range of 34-40 nA has been measured. The proposed device is particularly suitable for the continuous temperature monitoring of CMOS-compatible photonic integrated circuits, where the behavior of the on-chip active and passive devices are strongly dependent on their operating temperature.

Silicon Qubits

DOE Office of Scientific and Technical Information (OSTI.GOV)

Ladd, Thaddeus D.; Carroll, Malcolm S.

2018-02-28

Silicon is a promising material candidate for qubits due to the combination of worldwide infrastructure in silicon microelectronics fabrication and the capability to drastically reduce decohering noise channels via chemical purification and isotopic enhancement. However, a variety of challenges in fabrication, control, and measurement leaves unclear the best strategy for fully realizing this material’s future potential. In this article, we survey three basic qubit types: those based on substitutional donors, on metal-oxide-semiconductor (MOS) structures, and on Si/SiGe heterostructures. We also discuss the multiple schema used to define and control Si qubits, which may exploit the manipulation and detection of amore » single electron charge, the state of a single electron spin, or the collective states of multiple spins. Far from being comprehensive, this article provides a brief orientation to the rapidly evolving field of silicon qubit technology and is intended as an approachable entry point for a researcher new to this field.« less

Nano-interconnection for microelectronics and polymers with benzo-triazole

NASA Technical Reports Server (NTRS)

Park, Yeonjoon; Choi, Sang H.; Noh, Hyunpil; Kuk, Young

2006-01-01

Benzo-Triazole (BTA) is considered as an important bridging material that can connect an organic polymer to the metal electrode on silicon wafers as a part of the microelectronics fabrication technology. We report a detailed process of surface induced 3-D polymerization of BTA on the Cu electrode material which was measured with the Ultraviolet Photoemission Spectroscopy (UPS), X-ray Photoemission Spectroscopy (XPS), and Scanning Tunneling Microscope (STM). The electric utilization of shield and chain polymerization of BTA on Cu surface is contemplated in this study.

A molecular shift register based on electron transfer

NASA Technical Reports Server (NTRS)

Hopfield, J. J.; Onuchic, Josenelson; Beratan, David N.

1988-01-01

An electronic shift-register memory at the molecular level is described. The memory elements are based on a chain of electron-transfer molecules and the information is shifted by photoinduced electron-transfer reactions. This device integrates designed electronic molecules onto a very large scale integrated (silicon microelectronic) substrate, providing an example of a 'molecular electronic device' that could actually be made. The design requirements for such a device and possible synthetic strategies are discussed. Devices along these lines should have lower energy usage and enhanced storage density.

Advanced Silicon-on-Insulator: Crystalline Silicon on Atomic Layer Deposited Beryllium Oxide.

PubMed

Min Lee, Seung; Hwan Yum, Jung; Larsen, Eric S; Chul Lee, Woo; Keun Kim, Seong; Bielawski, Christopher W; Oh, Jungwoo

2017-10-16

Silicon-on-insulator (SOI) technology improves the performance of devices by reducing parasitic capacitance. Devices based on SOI or silicon-on-sapphire technology are primarily used in high-performance radio frequency (RF) and radiation sensitive applications as well as for reducing the short channel effects in microelectronic devices. Despite their advantages, the high substrate cost and overheating problems associated with complexities in substrate fabrication as well as the low thermal conductivity of silicon oxide prevent broad applications of this technology. To overcome these challenges, we describe a new approach of using beryllium oxide (BeO). The use of atomic layer deposition (ALD) for producing this material results in lowering the SOI wafer production cost. Furthermore, the use of BeO exhibiting a high thermal conductivity might minimize the self-heating issues. We show that crystalline Si can be grown on ALD BeO and the resultant devices exhibit potential for use in advanced SOI technology applications.

Texture in thin film silicides and germanides: A review

DOE Office of Scientific and Technical Information (OSTI.GOV)

De Schutter, B., E-mail: bob.deschutter@ugent.be; De Keyser, K.; Detavernier, C.

Silicides and germanides are compounds consisting of a metal and silicon or germanium. In the microelectronics industry, silicides are the material of choice for contacting silicon based devices (over the years, CoSi{sub 2}, C54-TiSi{sub 2}, and NiSi have been adopted), while germanides are considered as a top candidate for contacting future germanium based electronics. Since also strain engineering through the use of Si{sub 1−x}Ge{sub x} in the source/drain/gate regions of MOSFET devices is an important technique for improving device characteristics in modern Si-based microelectronics industry, a profound understanding of the formation of silicide/germanide contacts to silicon and germanium is ofmore » utmost importance. The crystallographic texture of these films, which is defined as the statistical distribution of the orientation of the grains in the film, has been the subject of scientific studies since the 1970s. Different types of texture like epitaxy, axiotaxy, fiber, or combinations thereof have been observed in such films. In recent years, it has become increasingly clear that film texture can have a profound influence on the formation and stability of silicide/germanide contacts, as it controls the type and orientation of grain boundaries (affecting diffusion and agglomeration) and the interface energy (affecting nucleation during the solid-state reaction). Furthermore, the texture also has an impact on the electrical characteristics of the contact, as the orientation and size of individual grains influences functional properties such as contact resistance and sheet resistance and will induce local variations in strain and Schottky barrier height. This review aims to give a comprehensive overview of the scientific work that has been published in the field of texture studies on thin film silicide/germanide contacts.« less

Texture in thin film silicides and germanides: A review

NASA Astrophysics Data System (ADS)

De Schutter, B.; De Keyser, K.; Lavoie, C.; Detavernier, C.

2016-09-01

Silicides and germanides are compounds consisting of a metal and silicon or germanium. In the microelectronics industry, silicides are the material of choice for contacting silicon based devices (over the years, CoSi2, C54-TiSi2, and NiSi have been adopted), while germanides are considered as a top candidate for contacting future germanium based electronics. Since also strain engineering through the use of Si1-xGex in the source/drain/gate regions of MOSFET devices is an important technique for improving device characteristics in modern Si-based microelectronics industry, a profound understanding of the formation of silicide/germanide contacts to silicon and germanium is of utmost importance. The crystallographic texture of these films, which is defined as the statistical distribution of the orientation of the grains in the film, has been the subject of scientific studies since the 1970s. Different types of texture like epitaxy, axiotaxy, fiber, or combinations thereof have been observed in such films. In recent years, it has become increasingly clear that film texture can have a profound influence on the formation and stability of silicide/germanide contacts, as it controls the type and orientation of grain boundaries (affecting diffusion and agglomeration) and the interface energy (affecting nucleation during the solid-state reaction). Furthermore, the texture also has an impact on the electrical characteristics of the contact, as the orientation and size of individual grains influences functional properties such as contact resistance and sheet resistance and will induce local variations in strain and Schottky barrier height. This review aims to give a comprehensive overview of the scientific work that has been published in the field of texture studies on thin film silicide/germanide contacts.

The MOS silicon gate technology and the first microprocessors

NASA Astrophysics Data System (ADS)

Faggin, F.

2015-12-01

Today we are so used to the enormous capabilities of microelectronics that it is hard to imagine what it might have been like in the early Sixties and Seventies when much of the technology we use today was being developed. This paper will first present a brief history of microelectronics and computers, taking us to the threshold of the inventions of the MOS silicon gate technology and the microprocessor. These two creations provided the basic technology that would allow only a few years later to merge microelectronics and computers into the first commercial monolithic computer. By the late Seventies, the first monolithic computer weighting less than one gram, occupying a volume of less than one cubic centimeter, dissipating less than one Watt, and selling for less than ten dollars, could perform more information processing than the UNIVAC I, the first commercial electronic computer introduced in 1951, made with 5200 vacuum tubes, dissipating 125kW, weighting 13 metric tons, occupying a room larger than 35m2, and selling for more than one million dollars per unit. The first-person story of the SGT and the early microprocessors will be told by the Italian-born physicist who led both projects.

Method of forming crystalline silicon devices on glass

DOEpatents

McCarthy, A.M.

1995-03-21

A method is disclosed for fabricating single-crystal silicon microelectronic components on a silicon substrate and transferring same to a glass substrate. This is achieved by utilizing conventional silicon processing techniques for fabricating components of electronic circuits and devices on bulk silicon, wherein a bulk silicon surface is prepared with epitaxial layers prior to the conventional processing. The silicon substrate is bonded to a glass substrate and the bulk silicon is removed leaving the components intact on the glass substrate surface. Subsequent standard processing completes the device and circuit manufacturing. This invention is useful in applications requiring a transparent or insulating substrate, particularly for display manufacturing. Other applications include sensors, actuators, optoelectronics, radiation hard electronics, and high temperature electronics. 7 figures.

Hybrid III-V/silicon lasers

NASA Astrophysics Data System (ADS)

Kaspar, P.; Jany, C.; Le Liepvre, A.; Accard, A.; Lamponi, M.; Make, D.; Levaufre, G.; Girard, N.; Lelarge, F.; Shen, A.; Charbonnier, P.; Mallecot, F.; Duan, G.-H.; Gentner, J.-.; Fedeli, J.-M.; Olivier, S.; Descos, A.; Ben Bakir, B.; Messaoudene, S.; Bordel, D.; Malhouitre, S.; Kopp, C.; Menezo, S.

2014-05-01

The lack of potent integrated light emitters is one of the bottlenecks that have so far hindered the silicon photonics platform from revolutionizing the communication market. Photonic circuits with integrated light sources have the potential to address a wide range of applications from short-distance data communication to long-haul optical transmission. Notably, the integration of lasers would allow saving large assembly costs and reduce the footprint of optoelectronic products by combining photonic and microelectronic functionalities on a single chip. Since silicon and germanium-based sources are still in their infancy, hybrid approaches using III-V semiconductor materials are currently pursued by several research laboratories in academia as well as in industry. In this paper we review recent developments of hybrid III-V/silicon lasers and discuss the advantages and drawbacks of several integration schemes. The integration approach followed in our laboratory makes use of wafer-bonded III-V material on structured silicon-on-insulator substrates and is based on adiabatic mode transfers between silicon and III-V waveguides. We will highlight some of the most interesting results from devices such as wavelength-tunable lasers and AWG lasers. The good performance demonstrates that an efficient mode transfer can be achieved between III-V and silicon waveguides and encourages further research efforts in this direction.

Crystallization Process of Superlattice-Like Sb/SiO2 Thin Films for Phase Change Memory Application

NASA Astrophysics Data System (ADS)

Zhu, Xiao-Qin; Zhang, Rui; Hu, Yi-Feng; Lai, Tian-Shu; Zhang, Jian-Hao; Zou, Hua; Song, Zhi-Tang

2018-05-01

Not Available Supported by the National Natural Science Foundation of China under Grant No 11774438, the Natural Science Foundation of Jiangsu Province under Grant No BK20151172, the Changzhou Science and Technology Bureau under Grant No CJ20160028, the Qing Lan Project, the Opening Project of State Key Laboratory of Silicon Materials under Grant No SKL2017-04, and the Opening Project of Key Laboratory of Microelectronic Devices and Integrated Technology of Institute of Microelectronics of Chinese Academy of Sciences.

NOVEL SYNTHETIC METHOD FOR NARROW DISTRIBUTED COLLOIDAL SILICALITE

EPA Science Inventory

Preparation of zeolites is important for a variety of applications such as microelectronics, separation agents, ion exchange, catalysis, adsorbents, nanocomposites and zeolite membranes. Silicalite-1 is a crystalline, microporous polymorph of silicon dioxide with the MFI framewo...

Phase transformation in SiOx/SiO₂ multilayers for optoelectronics and microelectronics applications.

PubMed

Roussel, M; Talbot, E; Pratibha Nalini, R; Gourbilleau, F; Pareige, P

2013-09-01

Due to the quantum confinement, silicon nanoclusters (Si-ncs) embedded in a dielectric matrix are of prime interest for new optoelectronics and microelectronics applications. In this context, SiO(x)/SiO₂ multilayers have been prepared by magnetron sputtering and subsequently annealed to induce phase separation and Si clusters growth. The aim of this paper is to study phase separation processes and formation of nanoclusters in SiO(x)/SiO₂ multilayers by atom probe tomography. Influences of the silicon supersaturation, annealing temperature and SiO(x) and SiO₂ layer thicknesses on the final microstructure have been investigated. It is shown that supersaturation directly determines phase separation regime between nucleation/classical growth and spinodal decomposition. Annealing temperature controls size of the particles and interface with the surrounding matrix. Layer thicknesses directly control Si-nc shapes from spherical to spinodal-like structures. Copyright © 2012 Elsevier B.V. All rights reserved.

High peak power solid-state laser for micromachining of hard materials

NASA Astrophysics Data System (ADS)

Herbst, Ludolf; Quitter, John P.; Ray, Gregory M.; Kuntze, Thomas; Wiessner, Alexander O.; Govorkov, Sergei V.; Heglin, Mike

2003-06-01

Laser micromachining has become a key enabling technology in the ever-continuing trend of miniaturization in microelectronics, micro-optics, and micromechanics. New applications have become commercially viable due to the emergence of innovative laser sources, such as diode pumped solid-state lasers (DPSSL), and the progress in processing technology. Examples of industrial applications are laser-drilled micro-injection nozzles for highly efficient automobile engines, or manufacturing of complex spinnerets for production of synthetic fibers. The unique advantages of laser-based techniques stem from their ability to produce high aspect ratio holes, while yielding low heat affected zones with exceptional surface quality, roundness and taper tolerances. Additionally, the ability to drill blind holes and slots in very hard materials such as diamond, silicon, sapphire, ceramics and steel is of great interest for many applications in microelectronics, semiconductor and automotive industry. This kind of high quality, high aspect ratio micromachining requires high peak power and short pulse durations.

Silicon waveguided components for the long-wave infrared region

NASA Astrophysics Data System (ADS)

Soref, Richard A.; Emelett, Stephen J.; Buchwald, Walter R.

2006-10-01

We propose that the operational wavelength of waveguided Si-based photonic integrated circuits and optoelectronic integrated circuits can be extended beyond the 1.55 µm telecom range into the wide infrared from 1.55 to 100 µm. The Si rib-membrane waveguide offers low-loss transmission from 1.2 to 6 µm and from 24 to 100 µm. This waveguide, which is compatible with Si microelectronics manufacturing, is constructed from silicon-on-insulator by etching away the oxide locally beneath the rib. Alternatively, low-loss waveguiding from 1.9 to 14.7 µm is assured by employing a crystal Ge rib grown directly upon the Si substrate. The Si-based hollow-core waveguide is an excellent device that minimizes loss due to silicon's 6-24 µm multi-phonon absorption. Here the rectangular air-filled core is surrounded by SiGe/Si multi-layer anti-resonant or Bragg claddings. The hollow channel offers less than 1.7 dB cm-1 loss from 1.2 to 100 µm. .

Hybrid indium phosphide-on-silicon nanolaser diode

NASA Astrophysics Data System (ADS)

Crosnier, Guillaume; Sanchez, Dorian; Bouchoule, Sophie; Monnier, Paul; Beaudoin, Gregoire; Sagnes, Isabelle; Raj, Rama; Raineri, Fabrice

2017-04-01

The most-awaited convergence of microelectronics and photonics promises to bring about a revolution for on-chip data communications and processing. Among all the optoelectronic devices to be developed, power-efficient nanolaser diodes able to be integrated densely with silicon photonics and electronics are essential to convert electrical data into the optical domain. Here, we report a demonstration of ultracompact laser diodes based on one-dimensional (1D) photonic crystal (PhC) nanocavities made in InP nanoribs heterogeneously integrated on a silicon-waveguide circuitry. The specific nanorib design enables an efficient electrical injection of carriers in the nanocavity without spoiling its optical properties. Room-temperature continuous-wave (CW) single-mode operation is obtained with a low current threshold of 100 µA. Laser emission at 1.56 µm in the silicon waveguides is obtained with wall-plug efficiencies greater than 10%. This result opens up exciting avenues for constructing optical networks at the submillimetre scale for on-chip interconnects and signal processing.

Lasing in silicon–organic hybrid waveguides

PubMed Central

Korn, Dietmar; Lauermann, Matthias; Koeber, Sebastian; Appel, Patrick; Alloatti, Luca; Palmer, Robert; Dumon, Pieter; Freude, Wolfgang; Leuthold, Juerg; Koos, Christian

2016-01-01

Silicon photonics enables large-scale photonic–electronic integration by leveraging highly developed fabrication processes from the microelectronics industry. However, while a rich portfolio of devices has already been demonstrated on the silicon platform, on-chip light sources still remain a key challenge since the indirect bandgap of the material inhibits efficient photon emission and thus impedes lasing. Here we demonstrate a class of infrared lasers that can be fabricated on the silicon-on-insulator (SOI) integration platform. The lasers are based on the silicon–organic hybrid (SOH) integration concept and combine nanophotonic SOI waveguides with dye-doped organic cladding materials that provide optical gain. We demonstrate pulsed room-temperature lasing with on-chip peak output powers of up to 1.1 W at a wavelength of 1,310 nm. The SOH approach enables efficient mass-production of silicon photonic light sources emitting in the near infrared and offers the possibility of tuning the emission wavelength over a wide range by proper choice of dye materials and resonator geometry. PMID:26949229

Microsensor research

NASA Astrophysics Data System (ADS)

Hughes, R. C.; Drebing, C. G.

1990-04-01

The technology that led to very large scale integrated circuits on silicon chips also provides a basis for new microsensors that are small, inexpensive, low power, rugged, and reliable. Two examples of microsensors Sandia is developing that take advantage of this technology are the microelectronic chemical sensor array and the radiation sensing field effect transistor (RADFET). Increasingly, the technology of chemical sensing needs new microsensor concepts. Applications in this area include environmental monitoring, criminal investigations, and state-of-health monitoring, both for equipment and living things. Chemical microsensors can satisfy sensing needs in the industrial, consumer, aerospace, and defense sectors. The microelectronic chemical-sensor array may address some of these applications. We have fabricated six separate chemical gas sensing areas on the microelectronic chemical sensor array. By using different catalytic metals on the gate areas of the diodes, we can selectively sense several gases.

Applicability of LET to single events in microelectronic structures

NASA Astrophysics Data System (ADS)

Xapsos, Michael A.

1992-12-01

LET is often used as a single parameter to determine the energy deposited in a microelectronic structure by a single event. The accuracy of this assumption is examined for ranges of ion energies and volumes of silicon appropriate for modern microelectronics. It is shown to be accurate only under very restricted conditions. Significant differences arise because (1) LET is related to energy lost by the ion, not energy deposited in the volume; and (2) LET is an average value and does not account for statistical variations in energy deposition. Criteria are suggested for determining when factors other than LET should be considered, and new analytical approaches are presented to account for them. One implication of these results is that improvements can be made in space upset rate predictions by incorporating the new methods into currently used codes such as CREME and CRUP.

Fundamental Studies of the Mechanical Behavior of Microelectronic Thin Film Materials

DTIC Science & Technology

1991-01-01

scanning, wafer curvature technique to study the kinetics of crystallization of amorphous silicon. When a thin film of amorphous silicon crystallizes...the film and the kinetics of the crystallization process. We find the tensile stress in the film to increase by about 500 MPa when crystallization...occurs. This is a very large stress that could have significance for device processing and applications. By measuring the kinetics of this stress change

Memory device using movement of protons

DOEpatents

Warren, William L.; Vanheusden, Karel J. R.; Fleetwood, Daniel M.; Devine, Roderick A. B.; Archer, Leo B.; Brown, George A.; Wallace, Robert M.

2000-01-01

An enhancement of an electrically written memory element utilizing the motion of protons within a dielectric layer surrounded by layers on either side to confine the protons within the dielectric layer with electrode means attached to the surrounding layers to change the spatial position of the protons within the dielectric layer. The device is preferably constructed as a silicon-silicon dioxide-silicon layered structure with the protons being introduced to the structure during an anneal in an atmosphere containing hydrogen gas. Device operation is enhanced by concluding this anneal step with a sudden cooling. The device operates at low power, is preferably nonvolatile, is radiation tolerant, and is compatible with convention silicon MOS processing for integration with other microelectronics elements on the same silicon substrate.

Structural and optical properties of silicon-carbide nanowires produced by the high-temperature carbonization of silicon nanostructures

DOE Office of Scientific and Technical Information (OSTI.GOV)

Pavlikov, A. V., E-mail: pavlikov@physics.msu.ru; Latukhina, N. V.; Chepurnov, V. I.

Silicon-carbide (SiC) nanowire structures 40–50 nm in diameter are produced by the high-temperature carbonization of porous silicon and silicon nanowires. The SiC nanowires are studied by scanning electron microscopy, X-ray diffraction analysis, Raman spectroscopy, and infrared reflectance spectroscopy. The X-ray structural and Raman data suggest that the cubic 3C-SiC polytype is dominant in the samples under study. The shape of the infrared reflectance spectrum in the region of the reststrahlen band 800–900 cm{sup –1} is indicative of the presence of free charge carriers. The possibility of using SiC nanowires in microelectronic, photonic, and gas-sensing devices is discussed.

Fabrication and characterization of resonant SOI micromechanical silicon sensors based on DRIE micromachining, freestanding release process and silicon direct bonding

NASA Astrophysics Data System (ADS)

Gigan, Olivier; Chen, Hua; Robert, Olivier; Renard, Stephane; Marty, Frederic

2002-11-01

This paper is dedicated to the fabrication and technological aspect of a silicon microresonator sensor. The entire project includes the fabrication processes, the system modelling/simulation, and the electronic interface. The mechanical model of such resonator is presented including description of frequency stability and Hysterises behaviour of the electrostatically driven resonator. Numeric model and FEM simulations are used to simulate the system dynamic behaviour. The complete fabrication process is based on standard microelectronics technology with specific MEMS technological steps. The key steps are described: micromachining on SOI by Deep Reactive Ion Etching (DRIE), specific release processes to prevent sticking (resist and HF-vapour release process) and collective vacuum encapsulation by Silicon Direct Bonding (SDB). The complete process has been validated and prototypes have been fabricated. The ASIC was designed to interface the sensor and to control the vibration amplitude. This electronic was simulated and designed to work up to 200°C and implemented in a standard 0.6μ CMOS technology. Characterizations of sensor prototypes are done both mechanically and electrostatically. These measurements showed good agreements with theory and FEM simulations.

Fabrication of planarised conductively patterned diamond for bio-applications.

PubMed

Tong, Wei; Fox, Kate; Ganesan, Kumaravelu; Turnley, Ann M; Shimoni, Olga; Tran, Phong A; Lohrmann, Alexander; McFarlane, Thomas; Ahnood, Arman; Garrett, David J; Meffin, Hamish; O'Brien-Simpson, Neil M; Reynolds, Eric C; Prawer, Steven

2014-10-01

The development of smooth, featureless surfaces for biomedical microelectronics is a challenging feat. Other than the traditional electronic materials like silicon, few microelectronic circuits can be produced with conductive features without compromising the surface topography and/or biocompatibility. Diamond is fast becoming a highly sought after biomaterial for electrical stimulation, however, its inherent surface roughness introduced by the growth process limits its applications in electronic circuitry. In this study, we introduce a fabrication method for developing conductive features in an insulating diamond substrate whilst maintaining a planar topography. Using a combination of microwave plasma enhanced chemical vapour deposition, inductively coupled plasma reactive ion etching, secondary diamond growth and silicon wet-etching, we have produced a patterned substrate in which the surface roughness at the interface between the conducting and insulating diamond is approximately 3 nm. We also show that the patterned smooth topography is capable of neuronal cell adhesion and growth whilst restricting bacterial adhesion. Copyright © 2014 Elsevier B.V. All rights reserved.

Growth and Etch Rate Study of Low Temperature Anodic Silicon Dioxide Thin Films

PubMed Central

Ashok, Akarapu; Pal, Prem

2014-01-01

Silicon dioxide (SiO2) thin films are most commonly used insulating films in the fabrication of silicon-based integrated circuits (ICs) and microelectromechanical systems (MEMS). Several techniques with different processing environments have been investigated to deposit silicon dioxide films at temperatures down to room temperature. Anodic oxidation of silicon is one of the low temperature processes to grow oxide films even below room temperature. In the present work, uniform silicon dioxide thin films are grown at room temperature by using anodic oxidation technique. Oxide films are synthesized in potentiostatic and potentiodynamic regimes at large applied voltages in order to investigate the effect of voltage, mechanical stirring of electrolyte, current density and the water percentage on growth rate, and the different properties of as-grown oxide films. Ellipsometry, FTIR, and SEM are employed to investigate various properties of the oxide films. A 5.25 Å/V growth rate is achieved in potentiostatic mode. In the case of potentiodynamic mode, 160 nm thickness is attained at 300 V. The oxide films developed in both modes are slightly silicon rich, uniform, and less porous. The present study is intended to inspect various properties which are considered for applications in MEMS and Microelectronics. PMID:24672287

Silicon Integrated Optics: Fabrication and Characterization

NASA Astrophysics Data System (ADS)

Shearn, Michael Joseph, II

For decades, the microelectronics industry has sought integration and miniaturization as canonized in Moore's Law, and has continued doubling transistor density about every two years. However, further miniaturization of circuit elements is creating a bandwidth problem as chip interconnect wires shrink as well. A potential solution is the creation of an on-chip optical network with low delays that would be impossible to achieve using metal buses. However, this technology requires integrating optics with silicon microelectronics. The lack of efficient silicon optical sources has stymied efforts of an all-Si optical platform. Instead, the integration of efficient emitter materials, such as III-V semiconductors, with Si photonic structures is a low-cost, CMOS-compatible alternative platform. This thesis focuses on making and measuring on-chip photonic structures suitable for on-chip optical networking. The first part of the thesis assesses processing techniques of silicon and other semiconductor materials. Plasmas for etching and surface modification are described and used to make bonded, hybrid Si/III-V structures. Additionally, a novel masking method using gallium implantation into silicon for pattern definition is characterized. The second part of the thesis focuses on demonstrations of fabricated optical structures. A dense array of silicon devices is measured, consisting of fully-etched grating couplers, low-loss waveguides and ring resonators. Finally, recent progress in the Si/III-V hybrid system is discussed. Supermode control of devices is described, which uses changing Si waveguide width to control modal overlap with the gain material. Hybrid Si/III-V, Fabry-Perot evanescent lasers are demonstrated, utilizing a CMOS-compatible process suitable for integration on in electronics platforms. Future prospects and ultimate limits of Si devices and the hybrid Si/III-V system are also considered.

Memory device using movement of protons

DOEpatents

Warren, W.L.; Vanheusden, K.J.R.; Fleetwood, D.M.; Devine, R.A.B.

1998-11-03

An electrically written memory element is disclosed utilizing the motion of protons within a dielectric layer surrounded by layers on either side to confine the protons within the dielectric layer with electrode means attached to the surrounding layers to change the spatial position of the protons within the dielectric layer. The device is preferably constructed as a silicon-silicon dioxide-silicon layered structure with the protons being introduced to the structure laterally through the exposed edges of the silicon dioxide layer during a high temperature anneal in an atmosphere containing hydrogen gas. The device operates at low power, is preferably nonvolatile, is radiation tolerant, and is compatible with convention silicon MOS processing for integration with other microelectronic elements on the same silicon substrate. With the addition of an optically active layer, the memory element becomes an electrically written, optically read optical memory element. 19 figs.

Memory device using movement of protons

DOEpatents

Warren, William L.; Vanheusden, Karel J. R.; Fleetwood, Daniel M.; Devine, Roderick A. B.

1998-01-01

An electrically written memory element utilizing the motion of protons within a dielectric layer surrounded by layers on either side to confine the protons within the dielectric layer with electrode means attached to the surrounding layers to change the spatial position of the protons within the dielectric layer. The device is preferably constructed as a silicon-silicon dioxide-silicon layered structure with the protons being introduced to the structure laterally through the exposed edges of the silicon dioxide layer during a high temperature anneal in an atmosphere containing hydrogen gas. The device operates at low power, is preferably nonvolatile, is radiation tolerant, and is compatible with convention silicon MOS processing for integration with other microelectronic elements on the same silicon substrate. With the addition of an optically active layer, the memory element becomes an electrically written, optically read optical memory element.

Memory device using movement of protons

DOEpatents

Warren, William L.; Vanheusden, Karel J. R.; Fleetwood, Daniel M.; Devine, Roderick A. B.

2000-01-01

An electrically written memory element utilizing the motion of protons within a dielectric layer surrounded by layers on either side to confine the protons within the dielectric layer with electrode means attached to the surrounding layers to change the spatial position of the protons within the dielectric layer. The device is preferably constructed as a silicon-silicon dioxide-silicon layered structure with the protons being introduced to the structure laterally through the exposed edges of the silicon dioxide layer during a high temperature anneal in an atmosphere containing hydrogen gas. The device operates at low power, is preferably nonvolatile, is radiation tolerant, and is compatible with convention silicon MOS processing for integration with other microelectronic elements on the same silicon substrate. With the addition of an optically active layer, the memory element becomes an electrically written, optically read optical memory element.

Modulation Doping of Silicon using Aluminium-induced Acceptor States in Silicon Dioxide

PubMed Central

König, Dirk; Hiller, Daniel; Gutsch, Sebastian; Zacharias, Margit; Smith, Sean

2017-01-01

All electronic, optoelectronic or photovoltaic applications of silicon depend on controlling majority charge carriers via doping with impurity atoms. Nanoscale silicon is omnipresent in fundamental research (quantum dots, nanowires) but also approached in future technology nodes of the microelectronics industry. In general, silicon nanovolumes, irrespective of their intended purpose, suffer from effects that impede conventional doping due to fundamental physical principles such as out-diffusion, statistics of small numbers, quantum- or dielectric confinement. In analogy to the concept of modulation doping, originally invented for III-V semiconductors, we demonstrate a heterostructure modulation doping method for silicon. Our approach utilizes a specific acceptor state of aluminium atoms in silicon dioxide to generate holes as majority carriers in adjacent silicon. By relocating the dopants from silicon to silicon dioxide, Si nanoscale doping problems are circumvented. In addition, the concept of aluminium-induced acceptor states for passivating hole selective tunnelling contacts as required for high-efficiency photovoltaics is presented and corroborated by first carrier lifetime and tunnelling current measurements. PMID:28425460

"Silicon millefeuille": From a silicon wafer to multiple thin crystalline films in a single step

NASA Astrophysics Data System (ADS)

Hernández, David; Trifonov, Trifon; Garín, Moisés; Alcubilla, Ramon

2013-04-01

During the last years, many techniques have been developed to obtain thin crystalline films from commercial silicon ingots. Large market applications are foreseen in the photovoltaic field, where important cost reductions are predicted, and also in advanced microelectronics technologies as three-dimensional integration, system on foil, or silicon interposers [Dross et al., Prog. Photovoltaics 20, 770-784 (2012); R. Brendel, Thin Film Crystalline Silicon Solar Cells (Wiley-VCH, Weinheim, Germany 2003); J. N. Burghartz, Ultra-Thin Chip Technology and Applications (Springer Science + Business Media, NY, USA, 2010)]. Existing methods produce "one at a time" silicon layers, once one thin film is obtained, the complete process is repeated to obtain the next layer. Here, we describe a technology that, from a single crystalline silicon wafer, produces a large number of crystalline films with controlled thickness in a single technological step.

Numerical Simulation and Experiments of Fatigue Crack Growth in Multi-Layer Structures of MEMS and Microelectronic Devices

DTIC Science & Technology

2006-12-01

ABAQUS by use of the UEL subroutine feature. The damage variable was defined on averaged variables per element (Roe and Siegmund, 2003). The location of... thermal expansion (CTE) which is similar to silicon. During the anodic bonding process, the stack of silicon and glass wafers is placed on a hot plate and...Brinckmann, T. Siegmund, "Modeling fatigue crack growth with ABAQUS ," 2005 ABAQUS Fracture Review Team Meeting, Providence, RI, (2005). 8. S

Proton Upset Monte Carlo Simulation

NASA Technical Reports Server (NTRS)

O'Neill, Patrick M.; Kouba, Coy K.; Foster, Charles C.

2009-01-01

The Proton Upset Monte Carlo Simulation (PROPSET) program calculates the frequency of on-orbit upsets in computer chips (for given orbits such as Low Earth Orbit, Lunar Orbit, and the like) from proton bombardment based on the results of heavy ion testing alone. The software simulates the bombardment of modern microelectronic components (computer chips) with high-energy (.200 MeV) protons. The nuclear interaction of the proton with the silicon of the chip is modeled and nuclear fragments from this interaction are tracked using Monte Carlo techniques to produce statistically accurate predictions.

In-chip microstructures and photonic devices fabricated by nonlinear laser lithography deep inside silicon

PubMed Central

Makey, Ghaith; Elahi, Parviz; Çolakoğlu, Tahir; Ergeçen, Emre; Yavuz, Özgün; Hübner, René; Borra, Mona Zolfaghari; Pavlov, Ihor; Bek, Alpan; Turan, Raşit; Kesim, Denizhan Koray; Tozburun, Serhat; Ilday, Serim; Ilday, F. Ömer

2017-01-01

Silicon is an excellent material for microelectronics and integrated photonics1–3 with untapped potential for mid-IR optics4. Despite broad recognition of the importance of the third dimension5,6, current lithography methods do not allow fabrication of photonic devices and functional microelements directly inside silicon chips. Even relatively simple curved geometries cannot be realised with techniques like reactive ion etching. Embedded optical elements, like in glass7, electronic devices, and better electronic-photonic integration are lacking8. Here, we demonstrate laser-based fabrication of complex 3D structures deep inside silicon using 1 µm-sized dots and rod-like structures of adjustable length as basic building blocks. The laser-modified Si has a different optical index than unmodified parts, which enables numerous photonic devices. Optionally, these parts are chemically etched to produce desired 3D shapes. We exemplify a plethora of subsurface, i.e., “in-chip” microstructures for microfluidic cooling of chips, vias, MEMS, photovoltaic applications and photonic devices that match or surpass the corresponding state-of-the-art device performances. PMID:28983323

In-chip microstructures and photonic devices fabricated by nonlinear laser lithography deep inside silicon

NASA Astrophysics Data System (ADS)

Tokel, Onur; Turnalı, Ahmet; Makey, Ghaith; Elahi, Parviz; ćolakoǧlu, Tahir; Ergeçen, Emre; Yavuz, Ã.-zgün; Hübner, René; Zolfaghari Borra, Mona; Pavlov, Ihor; Bek, Alpan; Turan, Raşit; Kesim, Denizhan Koray; Tozburun, Serhat; Ilday, Serim; Ilday, F. Ã.-mer

2017-10-01

Silicon is an excellent material for microelectronics and integrated photonics1-3, with untapped potential for mid-infrared optics4. Despite broad recognition of the importance of the third dimension5,6, current lithography methods do not allow the fabrication of photonic devices and functional microelements directly inside silicon chips. Even relatively simple curved geometries cannot be realized with techniques like reactive ion etching. Embedded optical elements7, electronic devices and better electronic-photonic integration are lacking8. Here, we demonstrate laser-based fabrication of complex 3D structures deep inside silicon using 1-µm-sized dots and rod-like structures of adjustable length as basic building blocks. The laser-modified Si has an optical index different to that in unmodified parts, enabling the creation of numerous photonic devices. Optionally, these parts can be chemically etched to produce desired 3D shapes. We exemplify a plethora of subsurface—that is, `in-chip'—microstructures for microfluidic cooling of chips, vias, micro-electro-mechanical systems, photovoltaic applications and photonic devices that match or surpass corresponding state-of-the-art device performances.

Active layers of high-performance lead zirconate titanate at temperatures compatible with silicon nano- and microelecronic devices

PubMed Central

Bretos, Iñigo; Jiménez, Ricardo; Tomczyk, Monika; Rodríguez-Castellón, Enrique; Vilarinho, Paula M.; Calzada, M. Lourdes

2016-01-01

Applications of ferroelectric materials in modern microelectronics will be greatly encouraged if the thermal incompatibility between inorganic ferroelectrics and semiconductor devices is overcome. Here, solution-processable layers of the most commercial ferroelectric compound ─ morphotrophic phase boundary lead zirconate titanate, namely Pb(Zr0.52Ti0.48)O3 (PZT) ─ are grown on silicon substrates at temperatures well below the standard CMOS process of semiconductor technology. The method, potentially transferable to a broader range of Zr:Ti ratios, is based on the addition of crystalline nanoseeds to photosensitive solutions of PZT resulting in perovskite crystallization from only 350 °C after the enhanced decomposition of metal precursors in the films by UV irradiation. A remanent polarization of 10.0 μC cm−2 is obtained for these films that is in the order of the switching charge densities demanded for FeRAM devices. Also, a dielectric constant of ~90 is measured at zero voltage which exceeds that of current single-oxide candidates for capacitance applications. The multifunctionality of the films is additionally demonstrated by their pyroelectric and piezoelectric performance. The potential integration of PZT layers at such low fabrication temperatures may redefine the concept design of classical microelectronic devices, besides allowing inorganic ferroelectrics to enter the scene of the emerging large-area, flexible electronics. PMID:26837240

Active layers of high-performance lead zirconate titanate at temperatures compatible with silicon nano- and microeletronic [corrected] devices.

PubMed

Bretos, Iñigo; Jiménez, Ricardo; Tomczyk, Monika; Rodríguez-Castellón, Enrique; Vilarinho, Paula M; Calzada, M Lourdes

2016-02-03

Applications of ferroelectric materials in modern microelectronics will be greatly encouraged if the thermal incompatibility between inorganic ferroelectrics and semiconductor devices is overcome. Here, solution-processable layers of the most commercial ferroelectric compound--morphotrophic phase boundary lead zirconate titanate, namely Pb(Zr0.52Ti0.48)O3 (PZT)--are grown on silicon substrates at temperatures well below the standard CMOS process of semiconductor technology. The method, potentially transferable to a broader range of Zr:Ti ratios, is based on the addition of crystalline nanoseeds to photosensitive solutions of PZT resulting in perovskite crystallization from only 350 °C after the enhanced decomposition of metal precursors in the films by UV irradiation. A remanent polarization of 10.0 μC cm(-2) is obtained for these films that is in the order of the switching charge densities demanded for FeRAM devices. Also, a dielectric constant of ~90 is measured at zero voltage which exceeds that of current single-oxide candidates for capacitance applications. The multifunctionality of the films is additionally demonstrated by their pyroelectric and piezoelectric performance. The potential integration of PZT layers at such low fabrication temperatures may redefine the concept design of classical microelectronic devices, besides allowing inorganic ferroelectrics to enter the scene of the emerging large-area, flexible electronics.

An Electronic Patch for wearable health monitoring by reflectance pulse oximetry.

PubMed

Haahr, Rasmus G; Duun, Sune B; Toft, Mette H; Belhage, Bo; Larsen, Jan; Birkelund, Karen; Thomsen, Erik V

2012-02-01

We report the development of an Electronic Patch for wearable health monitoring. The Electronic Patch is a new health monitoring system incorporating biomedical sensors, microelectronics, radio frequency (RF) communication, and a battery embedded in a 3-dimensional hydrocolloid polymer. In this paper the Electronic Patch is demonstrated with a new optical biomedical sensor for reflectance pulse oximetry so that the Electronic Patch in this case can measure the pulse and the oxygen saturation. The reflectance pulse oximetry solution is based on a recently developed annular backside silicon photodiode to enable low power consumption by the light emitting components. The Electronic Patch has a disposable part of soft adhesive hydrocolloid polymer and a reusable part of hard polylaurinlactam. The disposable part contains the battery. The reusable part contains the reflectance pulse oximetry sensor and microelectronics. The reusable part is 'clicked' into the disposable part when the patch is prepared for use. The patch has a size of 88 mm by 60 mm and a thickness of 5 mm.

Photopolymerizable liquid encapsulants for microelectronic devices

NASA Astrophysics Data System (ADS)

Baikerikar, Kiran K.

2000-10-01

Plastic encapsulated microelectronic devices consist of a silicon chip that is physically attached to a leadframe, electrically interconnected to input-output leads, and molded in a plastic that is in direct contact with the chip, leadframe, and interconnects. The plastic is often referred to as the molding compound, and is used to protect the chip from adverse mechanical, thermal, chemical, and electrical environments. Encapsulation of microelectronic devices is typically accomplished using a transfer molding process in which the molding compound is cured by heat. Most transfer molding processes suffer from significant problems arising from the high operating temperatures and pressures required to fill the mold. These aspects of the current process can lead to thermal stresses, incomplete mold filling, and wire sweep. In this research, a new strategy for encapsulating microelectronic devices using photopolymerizable liquid encapsulants (PLEs) has been investigated. The PLEs consist of an epoxy novolac-based vinyl ester resin (˜25 wt.%), fused silica filler (70--74 wt.%), and a photoinitiator, thermal initiator, and silane coupling agent. For these encapsulants, the use of light, rather than heat, to initiate the polymerization allows precise control over when the reaction starts, and therefore completely decouples the mold filling and the cure. The low viscosity of the PLEs allows for low operating pressures and minimizes problems associated with wire sweep. In addition, the in-mold cure time for the PLEs is equivalent to the in-mold cure times of current transfer molding compounds. In this thesis, the thermal and mechanical properties, as well as the viscosity and adhesion of photopolymerizable liquid encapsulants, are reported in order to demonstrate that a UV-curable formulation can have the material properties necessary for microelectronic encapsulation. In addition, the effects of the illumination time, postcure time, fused silica loading, and the inclusion of a thermal initiator on the thermal and mechanical properties of the final cured encapsulants have been investigated. The results show that the material properties of the PLEs are the same, if not better, than those exhibited by conventional transfer molding compounds and demonstrate the potential of using PLEs for encapsulating microelectronic devices.

Vacuum Microelectronic Field Emission Array Devices for Microwave Amplification.

NASA Astrophysics Data System (ADS)

Mancusi, Joseph Edward

This dissertation presents the design, analysis, and measurement of vacuum microelectronic devices which use field emission to extract an electron current from arrays of silicon cones. The arrays of regularly-spaced silicon cones, the field emission cathodes or emitters, are fabricated with an integrated gate electrode which controls the electric field at the tip of the cone, and thus the electron current. An anode or collector electrode is placed above the array to collect the emission current. These arrays, which are fabricated in a standard silicon processing facility, are developed for use as high power microwave amplifiers. Field emission has been studied extensively since it was first characterized in 1928, however due to the large electric fields required practical field emission devices are difficult to make. With the development of the semiconductor industry came the development of fabrication equipment and techniques which allow for the manufacture of the precision micron-scale structures necessary for practical field emission devices. The active region of a field emission device is a vacuum, therefore the electron travel is ballistic. This analysis of field emission devices includes electric field and electron emission modeling, development of a device equivalent circuit, analysis of the parameters in the equivalent circuit, and device testing. Variations in device structure are taken into account using a statistical model based upon device measurements. Measurements of silicon field emitter arrays at DC and RF are presented and analyzed. In this dissertation, the equivalent circuit is developed from the analysis of the device structure. The circuit parameters are calculated from geometrical considerations and material properties, or are determined from device measurements. It is necessary to include the emitter resistance in the equivalent circuit model since relatively high resistivity silicon wafers are used. As is demonstrated, the circuit model accurately predicts the magnitude of the emission current at a number of typical bias current levels when the device is operating at frequencies within the range of 10 MHz to 1 GHz. At low frequencies and at high frequencies within this range, certain parameters are negligible, and simplifications may be made in the equivalent circuit model.

Modified low-temperture direct bonding method for vacuum microelectronics application

NASA Astrophysics Data System (ADS)

Ju, Byeong-Kwon; Lee, Duck-Jung; Choi, Woo-Beom; Lee, Yun-Hi; Jang, Jin; Lee, Kwang-Bae; Oh, Myung-Hwan

1997-06-01

This paper presents the process and experimental results for the improved silicon-to-glass bonding using silicon direct bonding (SDB) followed by anodic bonding. The initial bonding between glass and silicon was caused by the hydrophilic surfaces of silicon-glass ensemble using SDB method. Then the initially bonded specimen had to be strongly bonded by anodic bonding process. The effects of the bonding process parameters on the interface energy were investigated as functions of the bonding temperature and voltage. We found that the specimen which was bonded using SDB process followed by anodic bonding process had higher interface energy than one using anodic bonding process only. The main factor contributing to the higher interface energy in the glass-to-silicon assemble bonded by SDB followed by anodic bonding was investigated by secondary ion mass spectroscopy analysis.

Silicon Modulators, Switches and Sub-systems for Optical Interconnect

NASA Astrophysics Data System (ADS)

Li, Qi

Silicon photonics is emerging as a promising platform for manufacturing and integrating photonic devices for light generation, modulation, switching and detection. The compatibility with existing CMOS microelectronic foundries and high index contrast in silicon could enable low cost and high performance photonic systems, which find many applications in optical communication, data center networking and photonic network-on-chip. This thesis first develops and demonstrates several experimental work on high speed silicon modulators and switches with record performance and novel functionality. A 8x40 Gb/s transmitter based on silicon microrings is first presented. Then an end-to-end link using microrings for Binary Phase Shift Keying (BPSK) modulation and demodulation is shown, and its performance with conventional BPSK modulation/ demodulation techniques is compared. Next, a silicon traveling-wave Mach- Zehnder modulator is demonstrated at data rate up to 56 Gb/s for OOK modulation and 48 Gb/s for BPSK modulation, showing its capability at high speed communication systems. Then a single silicon microring is shown with 2x2 full crossbar switching functionality, enabling optical interconnects with ultra small footprint. Then several other experiments in the silicon platform are presented, including a fully integrated in-band Optical Signal to Noise Ratio (OSNR) monitor, characterization of optical power upper bound in a silicon microring modulator, and wavelength conversion in a dispersion-engineered waveguide. The last part of this thesis is on network-level application of photonics, specically a broadcast-and-select network based on star coupler is introduced, and its scalability performance is studied. Finally a novel switch architecture for data center networks is discussed, and its benefits as a disaggregated network are presented.

A stable solution-processed polymer semiconductor with record high-mobility for printed transistors

PubMed Central

Li, Jun; Zhao, Yan; Tan, Huei Shuan; Guo, Yunlong; Di, Chong-An; Yu, Gui; Liu, Yunqi; Lin, Ming; Lim, Suo Hon; Zhou, Yuhua; Su, Haibin; Ong, Beng S.

2012-01-01

Microelectronic circuits/arrays produced via high-speed printing instead of traditional photolithographic processes offer an appealing approach to creating the long-sought after, low-cost, large-area flexible electronics. Foremost among critical enablers to propel this paradigm shift in manufacturing is a stable, solution-processable, high-performance semiconductor for printing functionally capable thin-film transistors — fundamental building blocks of microelectronics. We report herein the processing and optimisation of solution-processable polymer semiconductors for thin-film transistors, demonstrating very high field-effect mobility, high on/off ratio, and excellent shelf-life and operating stabilities under ambient conditions. Exceptionally high-gain inverters and functional ring oscillator devices on flexible substrates have been demonstrated. This optimised polymer semiconductor represents a significant progress in semiconductor development, dispelling prevalent skepticism surrounding practical usability of organic semiconductors for high-performance microelectronic devices, opening up application opportunities hitherto functionally or economically inaccessible with silicon technologies, and providing an excellent structural framework for fundamental studies of charge transport in organic systems. PMID:23082244

Polycrystalline silicon thin-film transistors on quartz fiber

NASA Astrophysics Data System (ADS)

Sugawara, Yuta; Uraoka, Yukiharu; Yano, Hiroshi; Hatayama, Tomoaki; Fuyuki, Takashi; Nakamura, Toshihiro; Toda, Sadayuki; Koaizawa, Hisashi; Mimura, Akio; Suzuki, Kenkichi

2007-11-01

We demonstrate the fabrication of polycrystalline silicon (poly-Si) thin-film transistors (TFTs) on a thin quartz fiber for the first time. The poly-Si used in the active layer of the TFTs was prepared by excimer laser annealing of an amorphous Si thin film deposited on the fiber. Top-gated TFTs were fabricated on the fiber, and a field effect mobility of 10cm2/Vs was obtained. The proposed TFTs on a thin quartz fiber, named fiber TFTs, have potential application in microelectronic devices using TFTs fabricated on one-dimensional substrates.

Breakthrough: micro-electronic photovoltaics

ScienceCinema

Okandan, Murat; Gupta, Vipin

2018-01-16

Sandia developed tiny glitter-sized photovoltaic (PV) cells that could revolutionize solar energy collection. The crystalline silicon micro-PV cells will be cheaper and have greater efficiencies than current PV collectors. Micro-PV cells require relatively little material to form well-controlled, highly efficient devices. Cell fabrication uses common microelectric and micro-electromechanical systems (MEMS) techniques.

Laser ultrasonic characterization of membranes for use as micro-electronic mechanical systems (MEMS)

NASA Astrophysics Data System (ADS)

Edwards, R. S.; Zhou, L. Q.; Pearce, M. J.; Prince, R. G.; Colston, G.; Myronov, M.; Leadley, D. R.; Trushkevych, O.

2017-02-01

Germanium (Ge) on Silicon (Si) has the potential to produce a wide variety of devices, including sensors, solar cells and transistors. Modification of these materials so that a suspended membrane layer is formed, through removing regions of the Si substrate, offers the potential for sensors with a more rapid response and higher sensitivity. Such membranes are a very simple micro-electronic mechanical system (MEMS). It is essential to ensure that the membranes are robust against shock and vibration, with well-characterised resonant frequencies, prior to any practical application. We present work using laser interferometry to characterise the resonant modes of membranes produced from Ge or silicon carbide (SiC) on a Si substrate, with the membranes typically having around 1 mm lateral dimensions. Two dimensional scanning of the sample enables visualisation of each mode. The stress measured from the resonant frequencies agrees well with that calculated from the growth conditions. SiC provides a more robust platform for electronics, while Ge offers better resonant properties. This offers a potential technique for characterising production quality or lifetime testing for the MEMS produced.

Microbridge testing of plasma-enhanced chemical-vapor deposited silicon oxide films on silicon wafers

NASA Astrophysics Data System (ADS)

Cao, Zhiqiang; Zhang, Tong-Yi; Zhang, Xin

2005-05-01

Plasma-enhanced chemical-vapor deposited (PECVD) silane-based oxides (SiOx) have been widely used in both microelectronics and microelectromechanical systems (MEMS) to form electrical and/or mechanical components. In this paper, a nanoindentation-based microbridge testing method is developed to measure both the residual stresses and Young's modulus of PECVD SiOx films on silicon wafers. Theoretically, we considered both the substrate deformation and residual stress in the thin film and derived a closed formula of deflection versus load. The formula fitted the experimental curves almost perfectly, from which the residual stresses and Young's modulus of the film were determined. Experimentally, freestanding microbridges made of PECVD SiOx films were fabricated using the silicon undercut bulk micromachining technique. Some microbridges were subjected to rapid thermal annealing (RTA) at a temperature of 400 °C, 600 °C, or 800 °C to simulate the thermal process in the device fabrication. The results showed that the as-deposited PECVD SiOx films had a residual stress of -155±17MPa and a Young's modulus of 74.8±3.3GPa. After the RTA, Young's modulus remained relatively unchanged at around 75 GPa, however, significant residual stress hysteresis was found in all the films. A microstructure-based mechanism was then applied to explain the experimental results of the residual stress changes in the PECVD SiOx films after the thermal annealing.

Method for forming silicon on a glass substrate

DOEpatents

McCarthy, Anthony M.

1995-01-01

A method by which single-crystal silicon microelectronics may be fabricated on glass substrates at unconventionally low temperatures. This is achieved by fabricating a thin film of silicon on glass and subsequently forming the doped components by a short wavelength (excimer) laser doping procedure and conventional patterning techniques. This method may include introducing a heavily boron doped etch stop layer on a silicon wafer using an excimer laser, which permits good control of the etch stop layer removal process. This method additionally includes dramatically reducing the remaining surface roughness of the silicon thin films after etching in the fabrication of silicon on insulator wafers by scanning an excimer laser across the surface of the silicon thin film causing surface melting, whereby the surface tension of the melt causes smoothing of the surface during recrystallization. Applications for this method include those requiring a transparent or insulating substrate, such as display manufacturing. Other applications include sensors, actuators, optoelectronics, radiation hard and high temperature electronics.

Method for forming silicon on a glass substrate

DOEpatents

McCarthy, A.M.

1995-03-07

A method by which single-crystal silicon microelectronics may be fabricated on glass substrates at unconventionally low temperatures. This is achieved by fabricating a thin film of silicon on glass and subsequently forming the doped components by a short wavelength (excimer) laser doping procedure and conventional patterning techniques. This method may include introducing a heavily boron doped etch stop layer on a silicon wafer using an excimer laser, which permits good control of the etch stop layer removal process. This method additionally includes dramatically reducing the remaining surface roughness of the silicon thin films after etching in the fabrication of silicon on insulator wafers by scanning an excimer laser across the surface of the silicon thin film causing surface melting, whereby the surface tension of the melt causes smoothing of the surface during recrystallization. Applications for this method include those requiring a transparent or insulating substrate, such as display manufacturing. Other applications include sensors, actuators, optoelectronics, radiation hard and high temperature electronics. 15 figs.

High quality silicon-based substrates for microwave and millimeter wave passive circuits

NASA Astrophysics Data System (ADS)

Belaroussi, Y.; Rack, M.; Saadi, A. A.; Scheen, G.; Belaroussi, M. T.; Trabelsi, M.; Raskin, J.-P.

2017-09-01

Porous silicon substrate is very promising for next generation wireless communication requiring the avoidance of high-frequency losses originating from the bulk silicon. In this work, new variants of porous silicon (PSi) substrates have been introduced. Through an experimental RF performance, the proposed PSi substrates have been compared with different silicon-based substrates, namely, standard silicon (Std), trap-rich (TR) and high resistivity (HR). All of the mentioned substrates have been fabricated where identical samples of CPW lines have been integrated on. The new PSi substrates have shown successful reduction in the substrate's effective relative permittivity to values as low as 3.7 and great increase in the substrate's effective resistivity to values higher than 7 kΩ cm. As a concept proof, a mm-wave bandpass filter (MBPF) centred at 27 GHz has been integrated on the investigated substrates. Compared with the conventional MBPF implemented on standard silicon-based substrates, the measured S-parameters of the PSi-based MBPF have shown high filtering performance, such as a reduction in insertion loss and an enhancement of the filter selectivity, with the joy of having the same filter performance by varying the temperature. Therefore, the efficiency of the proposed PSi substrates has been well highlighted. From 1994 to 1995, she was assistant of physics at (USTHB), Algiers . From 1998 to 2011, she was a Researcher at characterization laboratory in ionized media and laser division at the Advanced Technologies Development Center. She has integrated the Analog Radio Frequency Integrated Circuits team as Researcher since 2011 until now in Microelectronic and Nanotechnology Division at Advanced Technologies Development Center (CDTA), Algiers. She has been working towards her Ph.D. degree jointly at CDTA and Ecole Nationale Polytechnique, Algiers, since 2012. Her research interest includes fabrication and characterization of microwave passive devices on porous silicon as new substrate, such as characterization of FinFET components.

Linear and passive silicon diodes, isolators, and logic gates

NASA Astrophysics Data System (ADS)

Li, Zhi-Yuan

2013-12-01

Silicon photonic integrated devices and circuits have offered a promising means to revolutionalize information processing and computing technologies. One important reason is that these devices are compatible with conventional complementary metal oxide semiconductor (CMOS) processing technology that overwhelms current microelectronics industry. Yet, the dream to build optical computers has yet to come without the breakthrough of several key elements including optical diodes, isolators, and logic gates with low power, high signal contrast, and large bandwidth. Photonic crystal has a great power to mold the flow of light in micrometer/nanometer scale and is a promising platform for optical integration. In this paper we present our recent efforts of design, fabrication, and characterization of ultracompact, linear, passive on-chip optical diodes, isolators and logic gates based on silicon two-dimensional photonic crystal slabs. Both simulation and experiment results show high performance of these novel designed devices. These linear and passive silicon devices have the unique properties of small fingerprint, low power request, large bandwidth, fast response speed, easy for fabrication, and being compatible with COMS technology. Further improving their performance would open up a road towards photonic logics and optical computing and help to construct nanophotonic on-chip processor architectures for future optical computers.

Nanocrystalline Si pathway induced unipolar resistive switching behavior from annealed Si-rich SiNx/SiNy multilayers

NASA Astrophysics Data System (ADS)

Jiang, Xiaofan; Ma, Zhongyuan; Yang, Huafeng; Yu, Jie; Wang, Wen; Zhang, Wenping; Li, Wei; Xu, Jun; Xu, Ling; Chen, Kunji; Huang, Xinfan; Feng, Duan

2014-09-01

Adding a resistive switching functionality to a silicon microelectronic chip is a new challenge in materials research. Here, we demonstrate that unipolar and electrode-independent resistive switching effects can be realized in the annealed Si-rich SiNx/SiNy multilayers with high on/off ratio of 109. High resolution transmission electron microscopy reveals that for the high resistance state broken pathways composed of discrete nanocrystalline silicon (nc-Si) exist in the Si nitride multilayers. While for the low resistance state the discrete nc-Si regions is connected, forming continuous nc-Si pathways. Based on the analysis of the temperature dependent I-V characteristics and HRTEM photos, we found that the break-and-bridge evolution of nc-Si pathway is the origin of resistive switching memory behavior. Our findings provide insights into the mechanism of the resistive switching behavior in nc-Si films, opening a way for it to be utilized as a material in Si-based memories.

Fabrication of silicon-based template-assisted nanoelectrode arrays and ohmic contact properties investigation.

PubMed

Bai, Anqi; Cheng, Buwen; Wang, Xiaofeng; Xue, Chunlai; Zuo, Yuhua; Wang, Qiming

2010-11-01

A convenient fabrication technology for large-area, highly-ordered nanoelectrode arrays on silicon substrate has been described here, using porous anodic alumina (PAA) as a template. The ultrathin PAA membranes were anodic oxidized utilizing a two-step anodization method, from Al film evaporated on substrate. The purposes for the use of two-step anodization were, first, improving the regularity of the porous structures, and second reducing the thickness of the membranes to 100-200 nm we desired. Then the nanoelectrode arrays were obtained by electroless depositing Ni-W alloy into the through pores of PAA membranes, making the alloy isolated by the insulating pore walls and contacting with the silicon substrates at the bottoms of pores. The Ni-W alloy was also electroless deposited at the back surface of silicon to form back electrode. Then ohmic contact properties between silicon and Ni-W alloy were investigated after rapid thermal annealing. Scanning electron microscopy (SEM) observations showed the structure characteristics, and the influence factors of fabrication effect were discussed. The current-voltage (I-V) curves revealed the contact properties. After annealing in N2 at 700 degrees C, good linear property was shown with contact resistance of 33 omega, which confirmed ohmic contacts between silicon and electrodes. These results presented significant application potential of this technology in nanosize current-injection devices in optoelectronics, microelectronics and bio-medical fields.

Free-world microelectronic manufacturing equipment

NASA Astrophysics Data System (ADS)

Kilby, J. S.; Arnold, W. H.; Booth, W. T.; Cunningham, J. A.; Hutcheson, J. D.; Owen, R. W.; Runyan, W. R.; McKenney, Barbara L.; McGrain, Moira; Taub, Renee G.

1988-12-01

Equipment is examined and evaluated for the manufacture of microelectronic integrated circuit devices and sources for that equipment within the Free World. Equipment suitable for the following are examined: single-crystal silicon slice manufacturing and processing; required lithographic processes; wafer processing; device packaging; and test of digital integrated circuits. Availability of the equipment is also discussed, now and in the near future. Very adequate equipment for most stages of the integrated circuit manufacturing process is available from several sources, in different countries, although the best and most widely used versions of most manufacturing equipment are made in the United States or Japan. There is also an active market in used equipment, suitable for manufacture of capable integrated circuits with performance somewhat short of the present state of the art.

Development of microchannel plate x-ray optics

NASA Technical Reports Server (NTRS)

Kaaret, Philip

1995-01-01

The goal of this research program was to develop a novel technique for focusing x-rays based on the optical system of a lobster's eye. A lobster eye employs many closely packed reflecting surfaces arranged within a spherical or cylindrical shell. These optics have two unique properties: they have unlimited fields of view and can be manufactured via replication of identical structures. Because the angular resolution is given by the ratio of the size of the individual optical elements to the focal length, optical elements with size on the order of one hundred microns are required to achieve good angular resolution with a compact telescope. We employed anisotropic etching of single crystal silicon wafers for the fabrication of micron-scale optical elements. This technique, commonly referred to as silicon micromachining, is based on silicon fabrication techniques developed by the microelectronics industry. We have succeeded in producing silicon lenses with a geometry suitable for a 1-d focusing x-ray optics. These lenses have an aspect ratio (40:1) suitable for x-ray reflection and have very good optical surface alignment. We have developed a number of process refinements which improved the quality of the lens geometry and the repeatability of the etch process. In addition to the silicon fabrication, an x-ray beam line was constructed at Columbia for testing the optics. Most recently, we have done several experiments to find the fundamental limits that the anisotropic etch process placed on the etched surface roughness.

Heterogeneously integrated silicon photonics for the mid-infrared and spectroscopic sensing.

PubMed

Chen, Yu; Lin, Hongtao; Hu, Juejun; Li, Mo

2014-07-22

Besides being the foundational material for microelectronics, crystalline silicon has long been used for the production of infrared lenses and mirrors. More recently, silicon has become the key material to achieve large-scale integration of photonic devices for on-chip optical interconnect and signal processing. For optics, silicon has significant advantages: it offers a very high refractive index and is highly transparent in the spectral range from 1.2 to 8 μm. To fully exploit silicon’s superior performance in a remarkably broad range and to enable new optoelectronic functionalities, here we describe a general method to integrate silicon photonic devices on arbitrary foreign substrates. In particular, we apply the technique to integrate silicon microring resonators on mid-infrared compatible substrates for operation in the mid-infrared. These high-performance mid-infrared optical resonators are utilized to demonstrate, for the first time, on-chip cavity-enhanced mid-infrared spectroscopic analysis of organic chemicals with a limit of detection of less than 0.1 ng.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Akhter, Perveen; Huang, Mengbing, E-mail: mhuang@albany.edu; Spratt, William

Plasmonic effects associated with metal nanostructures are expected to hold the key to tailoring light emission/propagation and harvesting solar energy in materials including single crystal silicon which remains the backbone in the microelectronics and photovoltaics industries but unfortunately, lacks many functionalities needed for construction of advanced photonic and optoelectronics devices. Currently, silicon plasmonic structures are practically possible only in the configuration with metal nanoparticles or thin film arrays on a silicon surface. This does not enable one to exploit the full potential of plasmonics for optical engineering in silicon, because the plasmonic effects are dominant over a length of ∼50 nm,more » and the active device region typically lies below the surface much beyond this range. Here, we report on a novel method for the formation of silver nanoparticles embedded within a silicon crystal through metal gettering from a silver thin film deposited at the surface to nanocavities within the Si created by hydrogen ion implantation. The refractive index of the Ag-nanostructured layer is found to be 3–10% lower or higher than that of silicon for wavelengths below or beyond ∼815–900 nm, respectively. Around this wavelength range, the optical extinction values increase by a factor of 10–100 as opposed to the pure silicon case. Increasing the amount of gettered silver leads to an increased extinction as well as a redshift in wavelength position for the resonance. This resonance is attributed to the surface plasmon excitation of the resultant silver nanoparticles in silicon. Additionally, we show that the profiles for optical constants in silicon can be tailored by varying the position and number of nanocavity layers. Such silicon crystals with embedded metal nanostructures would offer novel functional base structures for applications in silicon photonics, optoelectronics, photovoltaics, and plasmonics.« less

Processing-Induced Electrically Active Defects in Black Silicon Nanowire Devices.

PubMed

Carapezzi, Stefania; Castaldini, Antonio; Mancarella, Fulvio; Poggi, Antonella; Cavallini, Anna

2016-04-27

Silicon nanowires (Si NWs) are widely investigated nowadays for implementation in advanced energy conversion and storage devices, as well as many other possible applications. Black silicon (BSi)-NWs are dry etched NWs that merge the advantages related to low-dimensionality with the special industrial appeal connected to deep reactive ion etching (RIE). In fact, RIE is a well established technique in microelectronics manufacturing. However, RIE processing could affect the electrical properties of BSi-NWs by introducing deep states into their forbidden gap. This work applies deep level transient spectroscopy (DLTS) to identify electrically active deep levels and the associated defects in dry etched Si NW arrays. Besides, the successful fitting of DLTS spectra of BSi-NWs-based Schottky barrier diodes is an experimental confirmation that the same theoretical framework of dynamic electronic behavior of deep levels applies in bulk as well as in low dimensional structures like NWs, when quantum confinement conditions do not occur. This has been validated for deep levels associated with simple pointlike defects as well as for deep levels associated with defects with richer structures, whose dynamic electronic behavior implies a more complex picture.

Electric measurements of PV heterojunction structures a-SiC/c-Si

NASA Astrophysics Data System (ADS)

Perný, Milan; Šály, Vladimír; Janíček, František; Mikolášek, Miroslav; Váry, Michal; Huran, Jozef

2018-01-01

Due to the particular advantages of amorphous silicon or its alloys with carbon in comparison to conventional crystalline materials makes such a material still interesting for study. The amorphous silicon carbide may be used in a number of micro-mechanical and micro-electronics applications and also for photovoltaic energy conversion devices. Boron doped thin layers of amorphous silicon carbide, presented in this paper, were prepared due to the optimization process for preparation of heterojunction solar cell structure. DC and AC measurement and subsequent evaluation were carried out in order to comprehensively assess the electrical transport processes in the prepared a-SiC/c-Si structures. We have investigated the influence of methane content in deposition gas mixture and different electrode configuration.

Electrodeposition of Gold to Conformally Fill High Aspect Ratio Nanometric Silicon Grating Trenches: A Comparison of Pulsed and Direct Current Protocols

PubMed Central

Znati, Sami A.; Chedid, Nicholas; Miao, Houxun; Chen, Lei; Bennett, Eric E.; Wen, Han

2016-01-01

Filling high-aspect-ratio trenches with gold is a frequent requirement in the fabrication of x-ray optics as well as micro-electronic components and other fabrication processes. Conformal electrodeposition of gold in sub-micron-width silicon trenches with an aspect ratio greater than 35 over a grating area of several square centimeters is challenging and has not been described in the literature previously. A comparison of pulsed plating and constant current plating led to a gold electroplating protocol that reliably filled trenches for such structures. PMID:27042384

Ultrafast and sensitive photodetector based on a PtSe2/silicon nanowire array heterojunction with a multiband spectral response from 200 to 1550 nm

NASA Astrophysics Data System (ADS)

Zeng, Longhui; Lin, Shenghuang; Lou, Zhenhua; Yuan, Huiyu; Long, Hui; Li, Yanyong; Lu, Wei; Lau, Shu Ping; Wu, Di; Tsang, Yuen Hong

2018-04-01

The newly discovered Group-10 transition metal dichalcogenides (TMDs) like PtSe2 have promising applications in high-performance microelectronic and optoelectronic devices due to their high carrier mobilities, widely tunable bandages and ultrastabilities. However, the optoelectronic performance of broadband PtSe2 photodetectors integrated with silicon remains undiscovered. Here, we report the successful preparation of large-scale, uniform and vertically grown PtSe2 films by simple selenization method for the design of a PtSe2/Si nanowire array heterostructure, which exhibited a very good photoresponsivity of 12.65 A/W, a high specific detectivity of 2.5 × 1013 Jones at -5 V and fast rise/fall times of 10.1/19.5 μs at 10 kHz without degradation while being capable of responding to high frequencies of up to 120 kHz. Our work has demonstrated the compatibility of PtSe2 with the existing silicon technology and ultrabroad band detection ranging from deep ultraviolet to optical telecommunication wavelengths, which can largely cover the limitations of silicon detectors. Further investigation of the device revealed pronounced photovoltaic behavior at 0 V, making it capable of operating as a self-powered photodetector. Overall, this representative PtSe2/Si nanowire array-based photodetector offers great potential for applications in next-generation optoelectronic and electronic devices.

Probing low noise at the MOS interface with a spin-orbit qubit.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Jock, Ryan Michael; Jacobson, Noah Tobias; Harvey-Collard, Patrick

The silicon metal-oxide-semiconductor (MOS) material system is technologically important for the implementation of electron spin-based quantum information technologies. Researchers predict the need for an integrated platform in order to implement useful computation, and decades of advancements in silicon microelectronics fabrication lends itself to this challenge. However, fundamental concerns have been raised about the MOS interface (e.g. trap noise, variations in electron g-factor and practical implementation of multi-QDs). Furthermore, two-axis control of silicon qubits has, to date, required the integration of non-ideal components (e.g. microwave strip-lines, micro-magnets, triple quantum dots, or introduction of donor atoms). In this paper, we introduce amore » spin-orbit (SO) driven singlet- triplet (ST) qubit in silicon, demonstrating all-electrical two-axis control that requires no additional integrated elements and exhibits charge noise properties equivalent to other more model, but less commercially mature, semiconductor systems. We demonstrate the ability to tune an intrinsic spin-orbit interface effect, which is consistent with Rashba and Dresselhaus contributions that are remarkably strong for a low spin-orbit material such as silicon. The qubit maintains the advantages of using isotopically enriched silicon for producing a quiet magnetic environment, measuring spin dephasing times of 1.6 μs using 99.95% 28Si epitaxy for the qubit, comparable to results from other isotopically enhanced silicon ST qubit systems. This work, therefore, demonstrates that the interface inherently provides properties for two-axis control, and the technologically important MOS interface does not add additional detrimental qubit noise. isotopically enhanced silicon ST qubit systems« less

Fixture for mounting small parts for processing

DOEpatents

Foreman, Larry R.; Gomez, Veronica M.; Thomas, Michael H.

1990-01-01

A fixture for mounting small parts, such as fusion target spheres or microelectronic components. A glass stalk is drawn and truncated near its tip. The truncated end of the glass stalk is dipped into silicone rubber forming an extending streamer. After the rubber cures for approximately 24 hours, a small part is touched to the streamer, and will be held securely throughout processing.

Thermal oxidation of silicon in a residual oxygen atmosphere—the RESOX process—for self-limiting growth of thin silicon dioxide films

NASA Astrophysics Data System (ADS)

Wright, Jason T.; Carbaugh, Daniel J.; Haggerty, Morgan E.; Richard, Andrea L.; Ingram, David C.; Kaya, Savas; Jadwisienczak, Wojciech M.; Rahman, Faiz

2016-10-01

We describe in detail the growth procedures and properties of thermal silicon dioxide grown in a limited and dilute oxygen atmosphere. Thin thermal oxide films have become increasingly important in recent years due to the continuing down-scaling of ultra large scale integration metal oxide silicon field effect transistors. Such films are also of importance for organic transistors where back-gating is needed. The technique described here is novel and allows self-limited formation of high quality thin oxide films on silicon surfaces. This technique is easy to implement in both research laboratory and industrial settings. Growth conditions and their effects on film growth have been described. Properties of the resulting oxide films, relevant for microelectronic device applications, have also been investigated and reported here. Overall, our findings are that thin, high quality, dense silicon dioxide films of thicknesses up to 100 nm can be easily grown in a depleted oxygen environment at temperatures similar to that used for usual silicon dioxide thermal growth in flowing dry oxygen.

Thick, low-stress films, and coated substrates formed therefrom

DOEpatents

Henager, Jr., Charles H.; Knoll, Robert W.

1991-01-01

Stress-induced deformation, and the damage resulting therefrom, increases with film thickness. The overcoming of excessive stress by the use of the film material of the present invention, permits the formation of thick films that are necessary for certain of the above described applications. The most likely use for the subject film materials, other than their specialized views as an optical film, is for microelectronic packaging of components on silicon substrates. In general, the subject Si-Al-O-N films have excellent adherence to the underlying substrate, a high degree of hardness and durability, and are excellent insulators. Prior art elevated temperature deposition processes cannot meet the microelectronic packaging temperature formation constraints. The process of the present invention is conducted under non-elevated temperature conditions, typically 500# C. or less.

Semiconductor Metal-Organic Frameworks: Future Low-Bandgap Materials.

PubMed

Usman, Muhammad; Mendiratta, Shruti; Lu, Kuang-Lieh

2017-02-01

Metal-organic frameworks (MOFs) with low density, high porosity, and easy tunability of functionality and structural properties, represent potential candidates for use as semiconductor materials. The rapid development of the semiconductor industry and the continuous miniaturization of feature sizes of integrated circuits toward the nanometer (nm) scale require novel semiconductor materials instead of traditional materials like silicon, germanium, and gallium arsenide etc. MOFs with advantageous properties of both the inorganic and the organic components promise to serve as the next generation of semiconductor materials for the microelectronics industry with the potential to be extremely stable, cheap, and mechanically flexible. Here, a perspective of recent research is provided, regarding the semiconducting properties of MOFs, bandgap studies, and their potential in microelectronic devices. © 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Thomson backscattering diagnostics of nanosecond electron bunches in high space charge regime

NASA Astrophysics Data System (ADS)

Plachinda, Pavel

The trend over the last 50 years of down-scaling the silicon transistor to achieve faster computations has led to doubling of the number of transistors and computation speed over about every two years. However, this trend cannot be maintained due to the fundamental limitations of silicon as the main material for the semiconducting industry. Therefore, there is an active search for exploration of alternate materials. Among the possible candidates that can may be able to replace silicon is graphene which has recently gained the most attention. Unique properties of graphene include exceedingly high carrier mobility, tunable band gap, huge optical density of a monolayer, anomalous quantum Hall effect, and many others. To be suitable for microelectronic applications the material should be semiconductive, i.e. have a non-zero band gap. Pristine graphene is a semimetal, but by the virtue of doping the graphene surface with different molecules and radicals a band gap can be opened. Because the electronic properties of all materials are intimately related to their atomic structure, characterization of molecular and electronic structure of functionalizing groups is of high interest. The ab-inito (from the first principles) calculations provide a unique opportunity to study the influence of the dopants and thus allow exploration of the physical phenomena in functionalized graphene structures. This ability paves the road to probe the properties based on the intuitive structural information only. A great advantage of this approach lies in the opportunity for quick screening of various atomic structures. We conducted a series of ab-inito investigations of graphene functionalized with covalently and hapticly bound groups, and demonstrated possible practical usage of functionalized graphene for microelectronic and optical applications. This investigation showed that it is possible produce band gaps in graphene (i.e., produce semiconducting graphene) of about 1 eV, without degrading the carrier mobility. This was archived by considering the influence of those adducts on electronic band structure and conductivity properties.

Three levels of neuroelectronic interfacing: silicon chips with ion channels, nerve cells, and brain tissue.

PubMed

Fromherz, Peter

2006-12-01

We consider the direct electrical interfacing of semiconductor chips with individual nerve cells and brain tissue. At first, the structure of the cell-chip contact is studied. Then we characterize the electrical coupling of ion channels--the electrical elements of nerve cells--with transistors and capacitors in silicon chips. On that basis it is possible to implement signal transmission between microelectronics and the microionics of nerve cells in both directions. Simple hybrid neuroelectronic systems are assembled with neuron pairs and with small neuronal networks. Finally, the interfacing with capacitors and transistors is extended to brain tissue cultured on silicon chips. The application of highly integrated silicon chips allows an imaging of neuronal activity with high spatiotemporal resolution. The goal of the work is an integration of neuronal network dynamics with digital electronics on a microscopic level with respect to experiments in brain research, medical prosthetics, and information technology.

High-temperature microelectromechanical pressure sensors based on a SOI heterostructure for an electronic automatic aircraft engine control system

NASA Astrophysics Data System (ADS)

Sokolov, Leonid V.

2010-08-01

There is a need of measuring distributed pressure on the aircraft engine inlet with high precision within a wide operating temperature range in the severe environment to improve the efficiency of aircraft engine control. The basic solutions and principles of designing high-temperature (to 523K) microelectromechanical pressure sensors based on a membrane-type SOI heterostructure with a monolithic integral tensoframe (MEMS-SOIMT) are proposed in accordance with the developed concept, which excludes the use of electric p-n junctions in semiconductor microelectromechanical sensors. The MEMS-SOIMT technology relies on the group processes of microelectronics and micromechanics for high-precision microprofiling of a three-dimension micromechanical structure, which exclude high-temperature silicon doping processes.

Fine Collimator Grids Using Silicon Metering Structure

NASA Technical Reports Server (NTRS)

Eberhard, Carol

1998-01-01

The project Fine Collimator Grids Using Silicon Metering Structure was managed by Dr. Carol Eberhard of the Electromagnetic Systems & Technology Department (Space & Technology Division) of TRW who also wrote this final report. The KOH chemical etching of the silicon wafers was primarily done by Dr. Simon Prussin of the Electrical Engineering Department of UCLA at the laboratory on campus. Moshe Sergant of the Superconductor Electronics Technology Department (Electronics Systems & Technology Division) of TRW and Dr. Prussin were instrumental in developing the low temperature silicon etching processes. Moshe Sergant and George G. Pinneo of the Microelectronics Production Department (Electronics Systems & Technology Division) of TRW were instrumental in developing the processes for filling the slots etched in the silicon wafers with metal-filled materials. Their work was carried out in the laboratories at the Space Park facility. Moshe Sergant is also responsible for the impressive array of Scanning Electron Microscope images with which the various processes were monitored. Many others also contributed their time and expertise to the project. I wish to thank them all.

Reactions of Persistent Carbenes with Hydrogen-Terminated Silicon Surfaces.

PubMed

Zhukhovitskiy, Aleksandr V; Mavros, Michael G; Queeney, K T; Wu, Tony; Voorhis, Troy Van; Johnson, Jeremiah A

2016-07-13

Surface passivation has enabled the development of silicon-based solar cells and microelectronics. However, a number of emerging applications require a paradigm shift from passivation to functionalization, wherein surface functionality is installed proximal to the silicon surface. To address this need, we report here the use of persistent aminocarbenes to functionalize hydrogen-terminated silicon surfaces via Si-H insertion reactions. Through the use of model compounds (H-Si(TMS)3 and H-Si(OTMS)3), nanoparticles (H-SiNPs), and planar Si(111) wafers (H-Si(111)), we demonstrate that among different classes of persistent carbenes, the more electrophilic and nucleophilic ones, in particular, a cyclic (alkyl)(amino)carbene (CAAC) and an acyclic diaminocarbene (ADAC), are able to undergo insertion into Si-H bonds at the silicon surface, forming persistent C-Si linkages and simultaneously installing amine or aminal functionality in proximity to the surface. The CAAC (6) is particularly notable for its clean insertion reactivity under mild conditions that produces monolayers with 21 ± 3% coverage of Si(111) atop sites, commensurate with the expected maximum of ∼20%. Atomic force and transmission electron microscopy, nuclear magnetic resonance, X-ray photoelectron, and infrared spectroscopy, and time-of-flight secondary ion mass spectrometry provided evidence for the surface Si-H insertion process. Furthermore, computational studies shed light on the reaction energetics and indicated that CAAC 6 should be particularly effective at binding to silicon dihydride, trihydride, and coupled monohyride motifs, as well as oxidized surface sites. Our results pave the way for the further development of persistent carbenes as universal ligands for silicon and potentially other nonmetallic substrates.

Thermally-Activated Metal-to-Glass Bonding

NASA Technical Reports Server (NTRS)

Gallagher, B. D.

1986-01-01

Hermetic seals formed easily by use of metallo-organic film. Metallo-organic film thermally bonded to glass and soldered or welded to form hermetic seal. Film applied as ink consisting of silver neodecanoate in xylene. Relative amounts of ingredients selected to obtain desired viscosity. Material applied by printing or even by scribing with pen. Sealing technique useful in making solar-cell modules, microelectronic packages, and other hermetic silicon devices.

Fixture for mounting small parts for processing

DOEpatents

Foreman, L.R.; Gomez, V.M.; Thomas, M.H.

1990-05-29

A fixture for mounting small parts, such as fusion target spheres or microelectronic components is disclosed. A glass stalk is drawn and truncated near its tip. The truncated end of the glass stalk is dipped into silicone rubber forming an extending streamer. After the rubber cures for approximately 24 hours, a small part is touched to the streamer, and will be held securely throughout processing. 5 figs.

In-situ microscale through-silicon via strain measurements by synchrotron x-ray microdiffraction exploring the physics behind data interpretation

DOE Office of Scientific and Technical Information (OSTI.GOV)

Liu, Xi; School of Electrical and Computer Engineering, Georgia Institute of Technology, Atlanta, Georgia 30332; Thadesar, Paragkumar A.

2014-09-15

In-situ microscale thermomechanical strain measurements have been performed in combination with synchrotron x-ray microdiffraction to understand the fundamental cause of failures in microelectronics devices with through-silicon vias. The physics behind the raster scan and data analysis of the measured strain distribution maps is explored utilizing the energies of indexed reflections from the measured data and applying them for beam intensity analysis and effective penetration depth determination. Moreover, a statistical analysis is performed for the beam intensity and strain distributions along the beam penetration path to account for the factors affecting peak search and strain refinement procedure.

Biosensor system-on-a-chip including CMOS-based signal processing circuits and 64 carbon nanotube-based sensors for the detection of a neurotransmitter.

PubMed

Lee, Byung Yang; Seo, Sung Min; Lee, Dong Joon; Lee, Minbaek; Lee, Joohyung; Cheon, Jun-Ho; Cho, Eunju; Lee, Hyunjoong; Chung, In-Young; Park, Young June; Kim, Suhwan; Hong, Seunghun

2010-04-07

We developed a carbon nanotube (CNT)-based biosensor system-on-a-chip (SoC) for the detection of a neurotransmitter. Here, 64 CNT-based sensors were integrated with silicon-based signal processing circuits in a single chip, which was made possible by combining several technological breakthroughs such as efficient signal processing, uniform CNT networks, and biocompatible functionalization of CNT-based sensors. The chip was utilized to detect glutamate, a neurotransmitter, where ammonia, a byproduct of the enzymatic reaction of glutamate and glutamate oxidase on CNT-based sensors, modulated the conductance signals to the CNT-based sensors. This is a major technological advancement in the integration of CNT-based sensors with microelectronics, and this chip can be readily integrated with larger scale lab-on-a-chip (LoC) systems for various applications such as LoC systems for neural networks.

Nanocrystalline Si pathway induced unipolar resistive switching behavior from annealed Si-rich SiN{sub x}/SiN{sub y} multilayers

DOE Office of Scientific and Technical Information (OSTI.GOV)

Jiang, Xiaofan; Ma, Zhongyuan, E-mail: zyma@nju.edu.cn; Yang, Huafeng

2014-09-28

Adding a resistive switching functionality to a silicon microelectronic chip is a new challenge in materials research. Here, we demonstrate that unipolar and electrode-independent resistive switching effects can be realized in the annealed Si-rich SiN{sub x}/SiN{sub y} multilayers with high on/off ratio of 10{sup 9}. High resolution transmission electron microscopy reveals that for the high resistance state broken pathways composed of discrete nanocrystalline silicon (nc-Si) exist in the Si nitride multilayers. While for the low resistance state the discrete nc-Si regions is connected, forming continuous nc-Si pathways. Based on the analysis of the temperature dependent I-V characteristics and HRTEM photos,more » we found that the break-and-bridge evolution of nc-Si pathway is the origin of resistive switching memory behavior. Our findings provide insights into the mechanism of the resistive switching behavior in nc-Si films, opening a way for it to be utilized as a material in Si-based memories.« less

Thick, low-stress films, and coated substrates formed therefrom, and methods for making same

DOEpatents

Henager, Jr., Charles H.; Knoll, Robert W.

1992-01-01

Stress-induced deformation, and the damage resulting therefrom, increases with film thickness. The overcoming of excessive stress by the use of the Si-Al-N film material of the present invention, permits the formation of thick films that are necessary for certain of the above described applications. The most likely use for the subject film materials, other than their specialized views as an optical film, is for microelectronic packaging of components on silicon substrates. In general, the subject films have excellent adherence to the underlying substrate, a high degree of hardness and durability, and are excellent insulators. Prior art elevated temperature deposition processes cannot meet the microelectronic packaging temperature formation constraints. The process of the present invention is conducted under non-elevated temperature conditions, typically 500.degree. C. or less.

Evaluation of advanced microelectronic fluxless solder-bump contacts for hybrid microcircuits

NASA Technical Reports Server (NTRS)

Mandal, R. P.

1976-01-01

Technology for interconnecting monolithic integrated circuit chips with other components is investigated. The advantages and disadvantages of the current flip-chip approach as compared to other interconnection methods are outlined. A fluxless solder-bump contact technology is evaluated. Multiple solder-bump contacts were formed on silicon integrated circuit chips. The solder-bumps, comprised of a rigid nickel under layer and a compliant solder overlayer, were electroformed onto gold device pads with the aid of thick dry film photomasks. Different solder alloys and the use of conductive epoxy for bonding were explored. Fluxless solder-bump bond quality and reliability were evaluated by measuring the effects of centrifuge, thermal cycling, and high temperature storage on bond visual characteristics, bond electrical continuity, and bond shear tests. The applicability and suitability of this technology for hybrid microelectronic packaging is discussed.

Memory switches based on metal oxide thin films

NASA Technical Reports Server (NTRS)

Ramesham, Rajeshuni (Inventor); Thakoor, Anilkumar P. (Inventor); Lambe, John J. (Inventor)

1990-01-01

MnO.sub.2-x thin films (12) exhibit irreversible memory switching (28) with an OFF/ON resistance ratio of at least about 10.sup.3 and the tailorability of ON state (20) resistance. Such films are potentially extremely useful as a connection element in a variety of microelectronic circuits and arrays (24). Such films provide a pre-tailored, finite, non-volatile resistive element at a desired place in an electric circuit, which can be electrically turned OFF (22) or disconnected as desired, by application of an electrical pulse. Microswitch structures (10) constitute the thin film element, contacted by a pair of separate electrodes (16a, 16b) and have a finite, pre-selected ON resistance which is ideally suited, for example, as a programmable binary synaptic connection for electronic implementation of neural network architectures. The MnO.sub.2-x microswitch is non-volatile, patternable, insensitive to ultraviolet light, and adherent to a variety of insulating substrates (14), such as glass and silicon dioxide-coated silicon substrates.

Substrate-Influenced Thermo-Mechanical Fatigue of Copper Metallizations: Limits of Stoney’s Equation

PubMed Central

Bigl, Stephan; Wurster, Stefan; Cordill, Megan J.

2017-01-01

Rapid progress in the reduction of substrate thickness for silicon-based microelectronics leads to a significant reduction of the device bending stiffness and the need to address its implication for the thermo-mechanical fatigue behavior of metallization layers. Results on 5 µm thick Cu films reveal a strong substrate thickness-dependent microstructural evolution. Substrates with hs = 323 and 220 µm showed that the Cu microstructure exhibits accelerated grain growth and surface roughening. Moreover, curvature-strain data indicates that Stoney’s simplified curvature-stress relation is not valid for thin substrates with regard to the expected strains, but can be addressed using more sophisticated plate bending theories. PMID:29120407

Encapsulation methods for organic electrical devices

DOEpatents

Blum, Yigal D.; Chu, William Siu-Keung; MacQueen, David Brent; Shi, Yijian

2013-06-18

The disclosure provides methods and materials suitable for use as encapsulation barriers in electronic devices. In one embodiment, for example, there is provided an electroluminescent device or other electronic device encapsulated by alternating layers of a silicon-containing bonding material and a ceramic material. The encapsulation methods provide, for example, electronic devices with increased stability and shelf-life. The invention is useful, for example, in the field of microelectronic devices.

Ultra-Low-Cost Room Temperature SiC Thin Films

NASA Technical Reports Server (NTRS)

Faur, Maria

1997-01-01

The research group at CSU has conducted theoretical and experimental research on 'Ultra-Low-Cost Room Temperature SiC Thin Films. The effectiveness of a ultra-low-cost room temperature thin film SiC growth technique on Silicon and Germanium substrates and structures with applications to space solar sells, ThermoPhotoVoltaic (TPV) cells and microelectronic and optoelectronic devices was investigated and the main result of this effort are summarized.

Proceedings of the International Conference on Integrated Micro/Nanotechnology for Space Applications

NASA Technical Reports Server (NTRS)

1995-01-01

The recent evolution of microelectronic technologies coupled with the growth of micro-electro-mechanical systems (MEMS) has had significant impact in the commercial sector. The focus of this conference was to anticipate and extend the incorporation of nano-electronics and MEMS into application specific integrated microinstruments (ASIM's) in space systems. Presentations ranged from mission application of nano-satellites to silicon micromachining for photonic applications.

The RACE (R&D in Advanced Communications Technologies for Europe) Program of the European Communities

DTIC Science & Technology

1988-08-17

asynchronous TDM for all channels; and hybrid solu- However, since technoeconomic considerations may im- tions, possibly involving dynamic rearranging. A...qualitative electronic switching are favored: CMOS, silicon bipolar, analysis , under the headings: timing of introduction, net- and gallium arsenide...or ring configurations. tem requirements. Project 1029. In this project an up-to-date analysis Microelectronic Components was made of the state of the

A manufacturable process integration approach for graphene devices

NASA Astrophysics Data System (ADS)

Vaziri, Sam; Lupina, Grzegorz; Paussa, Alan; Smith, Anderson D.; Henkel, Christoph; Lippert, Gunther; Dabrowski, Jarek; Mehr, Wolfgang; Östling, Mikael; Lemme, Max C.

2013-06-01

In this work, we propose an integration approach for double gate graphene field effect transistors. The approach includes a number of process steps that are key for future integration of graphene in microelectronics: bottom gates with ultra-thin (2 nm) high-quality thermally grown SiO2 dielectrics, shallow trench isolation between devices and atomic layer deposited Al2O3 top gate dielectrics. The complete process flow is demonstrated with fully functional GFET transistors and can be extended to wafer scale processing. We assess, through simulation, the effects of the quantum capacitance and band bending in the silicon substrate on the effective electric fields in the top and bottom gate oxide. The proposed process technology is suitable for other graphene-based devices such as graphene-based hot electron transistors and photodetectors.

Toward three-dimensional microelectronic systems: directed self-assembly of silicon microcubes via DNA surface functionalization.

PubMed

Lämmerhardt, Nico; Merzsch, Stephan; Ledig, Johannes; Bora, Achyut; Waag, Andreas; Tornow, Marc; Mischnick, Petra

2013-07-02

The huge and intelligent processing power of three-dimensional (3D) biological "processors" like the human brain with clock speeds of only 0.1 kHz is an extremely fascinating property, which is based on a massively parallel interconnect strategy. Artificial silicon microprocessors are 7 orders of magnitude faster. Nevertheless, they do not show any indication of intelligent processing power, mostly due to their very limited interconnectivity. Massively parallel interconnectivity can only be realized in three dimensions. Three-dimensional artificial processors would therefore be at the root of fabricating artificially intelligent systems. A first step in this direction would be the self-assembly of silicon based building blocks into 3D structures. We report on the self-assembly of such building blocks by molecular recognition, and on the electrical characterization of the formed assemblies. First, planar silicon substrates were functionalized with self-assembling monolayers of 3-aminopropyltrimethoxysilane for coupling of oligonucleotides (single stranded DNA) with glutaric aldehyde. The oligonucleotide immobilization was confirmed and quantified by hybridization with fluorescence-labeled complementary oligonucleotides. After the individual processing steps, the samples were analyzed by contact angle measurements, ellipsometry, atomic force microscopy, and fluorescence microscopy. Patterned DNA-functionalized layers were fabricated by microcontact printing (μCP) and photolithography. Silicon microcubes of 3 μm edge length as model objects for first 3D self-assembly experiments were fabricated out of silicon-on-insulator (SOI) wafers by a combination of reactive ion etching (RIE) and selective wet etching. The microcubes were then surface-functionalized using the same protocol as on planar substrates, and their self-assembly was demonstrated both on patterned silicon surfaces (88% correctly placed cubes), and to cube aggregates by complementary DNA functionalization and hybridization. The yield of formed aggregates was found to be about 44%, with a relative fraction of dimers of some 30%. Finally, the electrical properties of the formed dimers were characterized using probe tips inside a scanning electron microscope.

Photoemission-based microelectronic devices

PubMed Central

Forati, Ebrahim; Dill, Tyler J.; Tao, Andrea R.; Sievenpiper, Dan

2016-01-01

The vast majority of modern microelectronic devices rely on carriers within semiconductors due to their integrability. Therefore, the performance of these devices is limited due to natural semiconductor properties such as band gap and electron velocity. Replacing the semiconductor channel in conventional microelectronic devices with a gas or vacuum channel may scale their speed, wavelength and power beyond what is available today. However, liberating electrons into gas/vacuum in a practical microelectronic device is quite challenging. It often requires heating, applying high voltages, or using lasers with short wavelengths or high powers. Here, we show that the interaction between an engineered resonant surface and a low-power infrared laser can cause enough photoemission via electron tunnelling to implement feasible microelectronic devices such as transistors, switches and modulators. The proposed photoemission-based devices benefit from the advantages of gas-plasma/vacuum electronic devices while preserving the integrability of semiconductor-based devices. PMID:27811946

Second-harmonic generation in substoichiometric silicon nitride layers

NASA Astrophysics Data System (ADS)

Pecora, Emanuele; Capretti, Antonio; Miano, Giovanni; Dal Negro, Luca

2013-03-01

Harmonic generation in optical circuits offers the possibility to integrate wavelength converters, light amplifiers, lasers, and multiple optical signal processing devices with electronic components. Bulk silicon has a negligible second-order nonlinear optical susceptibility owing to its crystal centrosymmetry. Silicon nitride has its place in the microelectronic industry as an insulator and chemical barrier. In this work, we propose to take advantage of silicon excess in silicon nitride to increase the Second Harmonic Generation (SHG) efficiency. Thin films have been grown by reactive magnetron sputtering and their nonlinear optical properties have been studied by femtosecond pumping over a wide range of excitation wavelengths, silicon nitride stoichiometry and thermal processes. We demonstrate SHG in the visible range (375 - 450 nm) using a tunable 150 fs Ti:sapphire laser, and we optimize the SH emission at a silicon excess of 46 at.% demonstrating a maximum SHG efficiency of 4x10-6 in optimized films. Polarization properties, generation efficiency, and the second order nonlinear optical susceptibility are measured for all the investigated samples and discussed in terms of an effective theoretical model. Our findings show that the large nonlinear optical response demonstrated in optimized Si-rich silicon nitride materials can be utilized for the engineering of nonlinear optical functions and devices on a Si chip.

Dynamic observation on the growth behaviors in manganese silicide/silicon nanowire heterostructures.

PubMed

Hsieh, Yu-Hsun; Chiu, Chung-Hua; Huang, Chun-Wei; Chen, Jui-Yuan; Lin, Wan-Jhen; Wu, Wen-Wei

2015-02-07

Metal silicide nanowires (NWs) are very interesting materials with diverse physical properties. Among the silicides, manganese silicide nanostructures have attracted wide attention due to their several potential applications, including in microelectronics, optoelectronics, spintronics and thermoelectric devices. In this work, we exhibited the formation of pure manganese silicide and manganese silicide/silicon nanowire heterostructures through solid state reaction with line contacts between manganese pads and silicon NWs. Dynamical process and phase characterization were investigated by in situ transmission electron microscopy (in situ TEM) and spherical aberration corrected scanning transmission electron microscopy (Cs-corrected STEM), respectively. The growth dynamics of the manganese silicide phase under thermal effects were systematically studied. Additionally, Al2O3, serving as the surface oxide, altered the growth behavior of the MnSi nanowire, enhancing the silicide/Si epitaxial growth and effecting the diffusion process in the silicon nanowire as well. In addition to fundamental science, this significant study has great potential in advancing future processing techniques in nanotechnology and related applications.

Patterning of novel breast implant surfaces by enhancing silicone biocompatibility, using biomimetic topographies.

PubMed

Barr, S; Hill, E; Bayat, A

2010-04-26

Silicone biocompatibility is dictated by cell-surface interaction and its understanding is important in the field of implantation. The role of surface topography and its associated cellular morphology needs investigation to identify qualities that enhance silicone surface biocompatability. This study aims to create well-defined silicone topographies and examine how breast tissue-derived fibroblasts react and align to these surfaces. Photolithographic microelectronic techniques were modified to produce naturally inspired topographies in silicone, which were cultured with breast tissue-derived human fibroblasts. Using light, immunofluorescent and atomic force microscopy, the cytoskeletal reaction of fibroblasts to these silicone surfaces was investigated. Numerous, well-defined micron-sized pillars, pores, grooves, and ridges were manufactured and characterized in medical grade silicone. Inimitable immunofluorescent microscopy represented in our high magnification images of vinculin, vimentin, and the actin cytoskeleton highlights the differences in fibroblast adhesion between fabricated silicone surfaces. These unique figures illustrate that fibroblast adhesion and the reactions these cells have to silicone can be manipulated to enhance biointegration between the implant and the breast tissue. An alteration of fibroblast phenotype was also observed, exhibiting the propensity of these surfaces to induce categorical remodeling of fibroblasts. This unique study shows that fibroblast reactions to silicone topographies can be tailored to induce physiological changes in cells. This paves the way for further research necessary to develop more biocompatible constructs capable of eliminating capsular contracture by subverting the foreign body response.

Affordable, Robust Ceramic Joining Technology (ARCJoint) Developed

NASA Technical Reports Server (NTRS)

Steele, Gynelle C.

2001-01-01

Affordable, Robust Ceramic Joining Technology (ARCJoint) is a method for joining high temperature- resistant ceramic pieces together, establishing joints that are strong, and allowing joining to be done in the field. This new way of joining allows complex shapes to be formed by joining together geometrically simple shapes. The joining technology at NASA is one of the enabling technologies for the application of silicon-carbide-based ceramic and composite components in demanding and high-temperature applications. The technology is being developed and tested for high-temperature propulsion parts for aerospace use. Commercially, it can be used for joining ceramic pieces used for high temperature applications in the power-generating and chemical industries, as well as in the microelectronics industry. This innovation could yield big payoffs for not only the power-generating industry but also the Silicon Valley chipmakers. This technology, which was developed at the NASA Glenn Research Center by Dr. Mrityunjay Singh, is a two-step process involving first using a paste to join together ceramic pieces and bonding them by heating the joint to 110 to 120 C for between 10 and 20 min. This makes the joint strong enough to be handled for the final joining. Then, a silicon-based substance is applied to the joint and heated to 1400 C for 10 to 15 min. The resulting joint is as strong as the original ceramic material and can withstand the same high temperatures.

Perspectives on integrated modeling of transport processes in semiconductor crystal growth

NASA Technical Reports Server (NTRS)

Brown, Robert A.

1992-01-01

The wide range of length and time scales involved in industrial scale solidification processes is demonstrated here by considering the Czochralski process for the growth of large diameter silicon crystals that become the substrate material for modern microelectronic devices. The scales range in time from microseconds to thousands of seconds and in space from microns to meters. The physics and chemistry needed to model processes on these different length scales are reviewed.

Nuclear fragmentation studies for microelectronic application

NASA Technical Reports Server (NTRS)

Ngo, Duc M.; Wilson, John W.; Buck, Warren W.; Fogarty, Thomas N.

1989-01-01

A formalism for target fragment transport is presented with application to energy loss spectra in thin silicon devices. Predicted results are compared to experiments with the surface barrier detectors of McNulty et al. The intranuclear cascade nuclear reaction model does not predict the McNulty experimental data for the highest energy events. A semiempirical nuclear cross section gives an adequate explanation of McNulty's experiments. Application of the formalism to specific electronic devices is discussed.

Highly organised and dense vertical silicon nanowire arrays grown in porous alumina template on <100> silicon wafers

PubMed Central

2013-01-01

In this work, nanoimprint lithography combined with standard anodization etching is used to make perfectly organised triangular arrays of vertical cylindrical alumina nanopores onto standard <100>−oriented silicon wafers. Both the pore diameter and the period of alumina porous array are well controlled and can be tuned: the periods vary from 80 to 460 nm, and the diameters vary from 15 nm to any required diameter. These porous thin layers are then successfully used as templates for the guided epitaxial growth of organised mono-crystalline silicon nanowire arrays in a chemical vapour deposition chamber. We report the densities of silicon nanowires up to 9 × 109 cm−2 organised in highly regular arrays with excellent diameter distribution. All process steps are demonstrated on surfaces up to 2 × 2 cm2. Specific emphasis was made to select techniques compatible with microelectronic fabrication standards, adaptable to large surface samples and with a reasonable cost. Achievements made in the quality of the porous alumina array, therefore on the silicon nanowire array, widen the number of potential applications for this technology, such as optical detectors or biological sensors. PMID:23773702

Short-pulse laser interactions with disordered materials and liquids

DOE Office of Scientific and Technical Information (OSTI.GOV)

Phinney, L.M.; Goldman, C.H.; Longtin, J.P.

High-power, short-pulse lasers in the picosecond and subpicosecond range are utilized in an increasing number of technologies, including materials processing and diagnostics, micro-electronics and devices, and medicine. In these applications, the short-pulse radiation interacts with a wide range of media encompassing disordered materials and liquids. Examples of disordered materials include porous media, polymers, organic tissues, and amorphous forms of silicon, silicon nitride, and silicon dioxide. In order to accurately model, efficiently control, and optimize short-pulse, laser-material interactions, a thorough understanding of the energy transport mechanisms is necessary. Thus, fractals and percolation theory are used to analyze the anomalous diffusion regimemore » in random media. In liquids, the thermal aspects of saturable and multiphoton absorption are examined. Finally, a novel application of short-pulse laser radiation to reduce surface adhesion forces in microstructures through short-pulse laser-induced water desorption is presented.« less

Sensing systems using chip-based spectrometers

NASA Astrophysics Data System (ADS)

Nitkowski, Arthur; Preston, Kyle J.; Sherwood-Droz, Nicolás.; Behr, Bradford B.; Bismilla, Yusuf; Cenko, Andrew T.; DesRoches, Brandon; Meade, Jeffrey T.; Munro, Elizabeth A.; Slaa, Jared; Schmidt, Bradley S.; Hajian, Arsen R.

2014-06-01

Tornado Spectral Systems has developed a new chip-based spectrometer called OCTANE, the Optical Coherence Tomography Advanced Nanophotonic Engine, built using a planar lightwave circuit with integrated waveguides fabricated on a silicon wafer. While designed for spectral domain optical coherence tomography (SD-OCT) systems, the same miniaturized technology can be applied to many other spectroscopic applications. The field of integrated optics enables the design of complex optical systems which are monolithically integrated on silicon chips. The form factors of these systems can be significantly smaller, more robust and less expensive than their equivalent free-space counterparts. Fabrication techniques and material systems developed for microelectronics have previously been adapted for integrated optics in the telecom industry, where millions of chip-based components are used to power the optical backbone of the internet. We have further adapted the photonic technology platform for spectroscopy applications, allowing unheard-of economies of scale for these types of optical devices. Instead of changing lenses and aligning systems, these devices are accurately designed programmatically and are easily customized for specific applications. Spectrometers using integrated optics have large advantages in systems where size, robustness and cost matter: field-deployable devices, UAVs, UUVs, satellites, handheld scanning and more. We will discuss the performance characteristics of our chip-based spectrometers and the type of spectral sensing applications enabled by this technology.

Microfabricated biocapsules for the immunoisolation of pancreatic islets of Langerhans

NASA Astrophysics Data System (ADS)

Desai, Tejal Ashwin

1998-08-01

A silicon-based microfabricated biocapsule was developed and evaluated for use in the immunoisolation of transplanted cells, specifically pancreatic islets of Langerhans for the treatment of Type I diabetes. The transplantation of cells with specific functions is a promising therapy for a wide variety of pathologies including diabetes, Parkinson's, and hemophilia. Such transplanted cells, however, are sensitive to both cellular and humoral immune rejection as well as damage by autoimmune activity, without chronic immunosuppression. The research presented in this dissertation investigated whether microfabricated silicon-based biocapsules, with uniform membrane pore sizes in the tens of nanometer range, could provide an immunoprotective environment for pancreatic islets and other insulin-secreting cell lines, while maintaining cell viability and functionality. By utilizing fabrication techniques commonly employed in the microelectronics industry (MEMS), membranes were fabricated with precisely controlled and uniform pore sizes, allowing the optimization of biocapsule membrane parameters for the encapsulation of specific hormone-secreting cell types. The biocapsule-forming process employed bulk micromachining to define cell-containing chambers within single crystalline silicon wafers. These chambers interface with the surrounding biological environment through polycrystalline silicon filter membranes, which were surface micromachined to present a high density of uniform pores to allow sufficient permeability to oxygen, glucose, and insulin. Both in vitro and in vivo experiments established the biocompatibility of the microfabricated biocapsule, and demonstrated that encapsulated cells could live and function normally in terms of insulin-secretion within microfabricated environments for extended periods of time. This novel research shows the potential of using microfabricated biocapsules for the encapsulation of several different cell xenografts. The semipermeability of microfabricated biocapsules, their biocompatibility, along with their thermal and chemical stability, may provide an improved encapsulation device for the immunoisolation of cell xenografts in hormone-replacement and cell-based therapies.

Low temperature plasma enhanced CVD epitaxial growth of silicon on GaAs: a new paradigm for III-V/Si integration

NASA Astrophysics Data System (ADS)

Cariou, Romain; Chen, Wanghua; Maurice, Jean-Luc; Yu, Jingwen; Patriarche, Gilles; Mauguin, Olivia; Largeau, Ludovic; Decobert, Jean; Roca I Cabarrocas, Pere

2016-05-01

The integration of III-V semiconductors with silicon is a key issue for photonics, microelectronics and photovoltaics. With the standard approach, namely the epitaxial growth of III-V on silicon, thick and complex buffer layers are required to limit the crystalline defects caused by the interface polarity issues, the thermal expansion, and lattice mismatches. To overcome these problems, we have developed a reverse and innovative approach to combine III-V and silicon: the straightforward epitaxial growth of silicon on GaAs at low temperature by plasma enhanced CVD (PECVD). Indeed we show that both GaAs surface cleaning by SiF4 plasma and subsequent epitaxial growth from SiH4/H2 precursors can be achieved at 175 °C. The GaAs native oxide etching is monitored with in-situ spectroscopic ellipsometry and Raman spectroscopy is used to assess the epitaxial silicon quality. We found that SiH4 dilution in hydrogen during deposition controls the layer structure: the epitaxial growth happens for deposition conditions at the transition between the microcrystalline and amorphous growth regimes. SIMS and STEM-HAADF bring evidences for the interface chemical sharpness. Together, TEM and XRD analysis demonstrate that PECVD enables the growth of high quality relaxed single crystal silicon on GaAs.

Encapsulation methods and dielectric layers for organic electrical devices

DOEpatents

Blum, Yigal D; Chu, William Siu-Keung; MacQueen, David Brent; Shi, Yijan

2013-07-02

The disclosure provides methods and materials suitable for use as encapsulation barriers and dielectric layers in electronic devices. In one embodiment, for example, there is provided an electroluminescent device or other electronic device with a dielectric layer comprising alternating layers of a silicon-containing bonding material and a ceramic material. The methods provide, for example, electronic devices with increased stability and shelf-life. The invention is useful, for example, in the field of microelectronic devices.

Solar Cells for Lunar Application

NASA Technical Reports Server (NTRS)

Freundlich, Alex; Ignatiev, Alex

1997-01-01

In this work a preliminary study of the vacuum evaporation of silicon extracted from the lunar regolith has been undertaken. An electron gun vacuum evaporation system has been adapted for this purpose. Following the calibration of the system using ultra high purity silicon deposited on Al coated glass substrates, thin films of lunar Si were evaporated on a variety of crystalline substrates as well as on glass and lightweight 1 mil (25 microns) Al foil. Extremely smooth and featureless films with essentially semiconducting properties were obtained. Optical absorption analysis sets the bandgap (about 1.1 eV) and the refractive index (n=3.5) of the deposited thin films close to that of crystalline silicon. Secondary ion mass spectroscopy and energy dispersive spectroscopy analysis indicated that these films are essentially comparable to high purity silicon and that the evaporation process resulted in a substantial reduction of impurity levels. All layers exhibited a p-type conductivity suggesting the presence of a p-type dopant in the fabricated layers. While the purity of the 'lunar waste material' is below that of the 'microelectronic-grade silicon', the vacuum evaporated material properties seems to be adequate for the fabrication of average performance Si-based devices such as thin film solar cells. Taking into account solar cell thickness requirements (greater than 10 microns) and the small quantities of lunar material available for this study, solar cell fabrication was not possible. However, the high quality of the optical and electronic properties of evaporated thin films was found to be similar to those obtained using ultra-high purity silicon suggest that thin film solar cell production on the lunar surface with in situ resource utilization may be a viable approach for electric power generation on the moon.

Biosensor for detection of dissolved chromium in potable water: A review.

PubMed

Biswas, Puja; Karn, Abhinav Kumar; Balasubramanian, P; Kale, Paresh G

2017-08-15

The unprecedented deterioration rate of the environmental quality due to rapid urbanization and industrialization causes a severe global health concern to both ecosystem and humanity. Heavy metals are ubiquitous in nature and being used extensively in industrial processes, the exposure to excessive levels could alter the biochemical cycles of living systems. Hence the environmental monitoring through rapid and specific detection of heavy metal contamination in potable water is of paramount importance. Various standard analytical techniques and sensors are used for the detection of heavy metals include spectroscopy and chromatographic methods along with electrochemical, optical waveguide and polymer based sensors. However, the mentioned techniques lack the point of care application as it demands huge capital cost as well as the attention of expert personnel for sample preparation and operation. Recent advancements in the synergetic interaction among biotechnology and microelectronics have advocated the biosensor technology for a wide array of applications due to its characteristic features of sensitivity and selectivity. This review paper has outlined the overview of chromium toxicity, conventional analytical techniques along with a particular emphasis on electrochemical based biosensors for chromium detection in potable water. This article emphasized porous silicon as a host material for enzyme immobilization and elaborated the working principle, mechanism, kinetics of an enzyme-based biosensor for chromium detection. The significant characteristics such as pore size, thickness, and porosity make the porous silicon suitable for enzyme entrapment. Further, several schemes on porous silicon-based immobilized enzyme biosensors for the detection of chromium in potable water are proposed. Copyright © 2017 Elsevier B.V. All rights reserved.

High-contrast gratings for long-wavelength laser integration on silicon

NASA Astrophysics Data System (ADS)

Sciancalepore, Corrado; Descos, Antoine; Bordel, Damien; Duprez, Hélène; Letartre, Xavier; Menezo, Sylvie; Ben Bakir, Badhise

2014-02-01

Silicon photonics is increasingly considered as the most promising way-out to the relentless growth of data traffic in today's telecommunications infrastructures, driving an increase in transmission rates and computing capabilities. This is in fact challenging the intrinsic limit of copper-based, short-reach interconnects and microelectronic circuits in data centers and server architectures to offer enough modulation bandwidth at reasonable power dissipation. In the context of the heterogeneous integration of III-V direct-bandgap materials on silicon, optics with high-contrast metastructures enables the efficient implementation of optical functions such as laser feedback, input/output (I/O) to active/passive components, and optical filtering, while heterogeneous integration of III-V layers provides sufficient optical gain, resulting in silicon-integrated laser sources. The latest ensure reduced packaging costs and reduced footprint for the optical transceivers, a key point for the short reach communications. The invited talk will introduce the audience to the latest breakthroughs concerning the use of high-contrast gratings (HCGs) for the integration of III-V-on-Si verticalcavity surface-emitting lasers (VCSELs) as well as Fabry-Perot edge-emitters (EELs) in the main telecom band around 1.55 μm. The strong near-field mode overlap within HCG mirrors can be exploited to implement unique optical functions such as dense wavelength division multiplexing (DWDM): a 16-λ100-GHz-spaced channels VCSEL array is demonstrated. On the other hand, high fabrication yields obtained via molecular wafer bonding of III-V alloys on silicon-on-insulator (SOI) conjugate excellent device performances with cost-effective high-throughput production, supporting industrial needs for a rapid research-to-market transfer.

Patterning of Novel Breast Implant Surfaces by Enhancing Silicone Biocompatibility, Using Biomimetic Topographies

PubMed Central

Barr, S.; Hill, E.; Bayat, A.

2010-01-01

Introduction and Aims: Silicone biocompatibility is dictated by cell-surface interaction and its understanding is important in the field of implantation. The role of surface topography and its associated cellular morphology needs investigation to identify qualities that enhance silicone surface biocompatability. This study aims to create well-defined silicone topographies and examine how breast tissue–derived fibroblasts react and align to these surfaces. Methods: Photolithographic microelectronic techniques were modified to produce naturally inspired topographies in silicone, which were cultured with breast tissue–derived human fibroblasts. Using light, immunofluorescent and atomic force microscopy, the cytoskeletal reaction of fibroblasts to these silicone surfaces was investigated. Results: Numerous, well-defined micron-sized pillars, pores, grooves, and ridges were manufactured and characterized in medical grade silicone. Inimitable immunofluorescent microscopy represented in our high magnification images of vinculin, vimentin, and the actin cytoskeleton highlights the differences in fibroblast adhesion between fabricated silicone surfaces. These unique figures illustrate that fibroblast adhesion and the reactions these cells have to silicone can be manipulated to enhance biointegration between the implant and the breast tissue. An alteration of fibroblast phenotype was also observed, exhibiting the propensity of these surfaces to induce categorical remodeling of fibroblasts. Conclusions: This unique study shows that fibroblast reactions to silicone topographies can be tailored to induce physiological changes in cells. This paves the way for further research necessary to develop more biocompatible constructs capable of eliminating capsular contracture by subverting the foreign body response. PMID:20458346

Microstereolithography for polymer-based based MEMS

NASA Astrophysics Data System (ADS)

Varadan, Vijay K.; Xie, Jining

2003-07-01

Microfabrication techniques such as bulk micromachining and surface micromachining currently employed to conceive MEMS are largely derived from the standard IC and microelectronics technology. Even though many MEMS devices with integrated electronics have been achieved by using the traditional micromachining techniques, some limitations have nevertheless to be underlined: 1) these techniques are very expensive and need specific installations as well as a cleanroom environment, 2) the materials that can be used up to now are restricted to silicon and metals, 3) the manufacture of 3D parts having curved surfaces or an important number of layers is not possible. Moreover, for some biological applications, the materials used for sensors must be compatible with human body and the actuators need to have high strain and displacement which the current silicon based MEMS do not provide. It is thus natural for the researchers to 'look' for alternative methods such as Microstereolithography (MSL) to make 3D sensors and actuators using polymeric based materials. For MSL techniques to be successful as their silicon counterparts, one has to come up with multifunctional polymers with electrical properties comparable to silicon. These multifunctional polymers should not only have a high sensing capability but also a high strain and actuation performance. A novel UV-curable polymer uniformly bonded with functionalized nanotubes was synthesized via a modified three-step in-situ polymerization. Purified multi-walled nanotubes, gained from the microwave chemical vapor deposition method, were functionalized by oxidation. The UV curable polymer was prepared from toluene diisocyanate (TDI), functionalized nanotubes, and 2-hydroxyethyl methacrylate (HEMA). The chemical bonds between -NCO groups of TDI and -OH, -COOH groups of functionalized nanotubes help for conceiving polymeric based MEMS devices. A cost effective fabrication techniques was presented using Micro Stereo Lithography and an example of a micropump was also described. The wireless concept of the device has many applications including implanted medical delivery systems, chemical and biological instruments, fluid delivery in engines, pump coolants and refrigerants for local cooling of electronic components.

Polysilicon for everything?

NASA Astrophysics Data System (ADS)

Ward, M. C. L.; McNie, Mark E.; Bunyan, Robert J.; King, David O.; Carline, Roger T.; Wilson, Rebecca; Gillham, J. P.

1998-09-01

We review some of the attractive attributes of microengineering and relate them to features of the highly successful silicon microelectronics industry. We highlight the need for cost effective functionality rather than ultimate performance as a driver for success and review key examples of polysilicon devices from this point of view. The effective exploitation of the data generated by the cost effective polysilicon sensors is also considered and we conclude that `non traditional' data analysis will need to be exploited if full use is to be made of polysilicon devices.

Silicon Nanoclusters Embedded in SiO2 Studies by Raman Scattering

DTIC Science & Technology

2001-06-01

was partially supported by a CON- CYTEQ (Consejo de Ciencia y Tecnologia del Estado de Quer~taro) and CONACyT from Mexico. References [1] L. Rebohle, J...scattering F J. Espinoza-Beltrdnt, L. L. Diaz-FloresT, J. Morales-Herndndezl, J. M. Ydfiez-Lim6nt, F Rodriguez-Melgarejot, Y . V. VorobievT and J. Gonzflez...F. PNrez-Robles, R. Ramirez- Bon, Y . V. Vorobiev and J. Gonzdilez-Hern~indez, Microelectronic Engineering, 51-52, 659- 666 (2000). [6] K. Kim, Phys

Doping profile measurements in silicon using terahertz time domain spectroscopy (THz-TDS) via electrochemical anodic oxidation

NASA Astrophysics Data System (ADS)

Tulsyan, Gaurav

Doping profiles are engineered to manipulate device properties and to determine electrical performances of microelectronic devices frequently. To support engineering studies afterward, essential information is usually required from physically characterized doping profiles. Secondary Ion Mass Spectrometry (SIMS), Spreading Resistance Profiling (SRP) and Electrochemical Capacitance Voltage (ECV) profiling are standard techniques for now to map profile. SIMS yields a chemical doping profile via ion sputtering process and owns a better resolution, whereas ECV and SRP produce an electrical doping profile detecting free carriers in microelectronic devices. The major difference between electrical and chemical doping profiles is at heavily doped regions greater than 1020 atoms/cm3. At the profile region over the solubility limit, inactive dopants induce a flat plateau and detected by electrical measurements only. Destructive techniques are usually designed as stand-alone systems to study impurities. For an in-situ process control purpose, non-contact methods, such as ellipsometry and non-contact capacitance voltage (CV) techniques are current under development. In this theses work, terahertz time domain spectroscopy (THz-TDS) is utilized to achieve electrical doping profile in both destructive and non-contact manners. In recent years the Terahertz group at Rochester Institute Technology developed several techniques that use terahertz pulses to non-destructively map doping profiles. In this thesis, we study a destructive but potentially higher resolution version of the terahertz based approach to map the profile of activated dopants and augment the non-destructive approaches already developed. The basic idea of the profile mapping approach developed in this MS thesis is to anodize, and thus oxidize to silicon dioxide, thin layers (down to below 10 nm) of the wafer with the doping profile to be mapped. Since the dopants atoms and any free carriers in the silicon oxide thin film are invisible to the terahertz probe this anodization step very effectively removes a 'thin slice' from the doping profile to be mapped. By iterating between anodization and terahertz measurements that detect only the 'remaining' non-oxidized portion of the doping profile one can re-construct the doping profile with significantly higher precision compared to what is possible by only a single non-destructive measurement of the un-anodized profile as used in the non-destructive version of our technique. In this MS thesis we explore all aspects of this anodization based variation of doping profile mapping using free space terahertz pulses. This includes a study of silicon dioxide thin film growth using a room temperature electrochemical oxidation process. Etching procedures providing the option to remove between successive anodization and terahertz measurement steps. THz-TDS measurements of successively anodized profiles will be compared with sheet resistance and SIMS measurements to benchmark and improve the new technique.

Monolithic integration of SOI waveguide photodetectors and transimpedance amplifiers

NASA Astrophysics Data System (ADS)

Li, Shuxia; Tarr, N. Garry; Ye, Winnie N.

2018-02-01

In the absence of commercial foundry technologies offering silicon-on-insulator (SOI) photonics combined with Complementary Metal Oxide Semiconductor (CMOS) transistors, monolithic integration of conventional electronics with SOI photonics is difficult. Here we explore the implementation of lateral bipolar junction transistors (LBJTs) and Junction Field Effect Transistors (JFETs) in a commercial SOI photonics technology lacking MOS devices but offering a variety of n- and p-type ion implants intended to provide waveguide modulators and photodetectors. The fabrication makes use of the commercial Institute of Microelectronics (IME) SOI photonics technology. Based on knowledge of device doping and geometry, simple compact LBJT and JFET device models are developed. These models are then used to design basic transimpedance amplifiers integrated with optical waveguides. The devices' experimental current-voltage characteristics results are reported.

Development of microchannel plate x-ray optics

NASA Technical Reports Server (NTRS)

Kaaret, Philip; Chen, Andrew

1994-01-01

The goal of this research program was to develop a novel technique for focusing x-rays based on the optical system of a lobster's eye. A lobster eye employs many closely packed reflecting surfaces arranged within a spherical or cylindrical shell. These optics have two unique properties: they have unlimited fields of view and can be manufactured via replication of identical structures. Because the angular resolution is given by the ratio of the size of the individual optical elements to the focal length, optical elements with sizes on the order of one hundred microns are required to achieve good angular resolution with a compact telescope. We employed anisotropic etching of single crystal silicon wafers for the fabrication of micron-scale optical elements. This technique, commonly referred to as silicon micromachining, is based on silicon fabrication techniques developed by the microelectronics industry. An anisotropic etchant is a chemical which etches certain silicon crystal planes much more rapidly than others. Using wafers in which the slowly etched crystal planes are aligned perpendicularly to the wafer surface, it is possible to etch a pattern completely through a wafer with very little distortion. Our optics consist of rectangular pores etched completely through group of zone axes (110) oriented silicon wafers. The larger surfaces of the pores (the mirror elements) were aligned with the group of zone axes (111) planes of the crystal perpendicular to the wafer surface. We have succeeded in producing silicon lenses with a geometry suitable for 1-d focusing x-ray optics. These lenses have an aspect ratio (40:1) suitable for x-ray reflection and have very good optical surface alignment. We have developed a number of process refinements which improved the quality of the lens geometry and the repeatability of the etch process. A significant progress was made in obtaining good optical surface quality. The RMS roughness was decreased from 110 A for our initial lenses to 30 A in the final lenses. A further factor of three improvement in surface quality is required for the production of efficient x-ray optics. In addition to the silicon fabrication, an x-ray beam line was constructed at Columbia for testing the optics.

Germanium Based Field-Effect Transistors: Challenges and Opportunities

PubMed Central

Goley, Patrick S.; Hudait, Mantu K.

2014-01-01

The performance of strained silicon (Si) as the channel material for today’s metal-oxide-semiconductor field-effect transistors may be reaching a plateau. New channel materials with high carrier mobility are being investigated as alternatives and have the potential to unlock an era of ultra-low-power and high-speed microelectronic devices. Chief among these new materials is germanium (Ge). This work reviews the two major remaining challenges that Ge based devices must overcome if they are to replace Si as the channel material, namely, heterogeneous integration of Ge on Si substrates, and developing a suitable gate stack. Next, Ge is compared to compound III-V materials in terms of p-channel device performance to review how it became the first choice for PMOS devices. Different Ge device architectures, including surface channel and quantum well configurations, are reviewed. Finally, state-of-the-art Ge device results and future prospects are also discussed. PMID:28788569

Two- to three-dimensional crossover in a dense electron liquid in silicon

NASA Astrophysics Data System (ADS)

Matmon, Guy; Ginossar, Eran; Villis, Byron J.; Kölker, Alex; Lim, Tingbin; Solanki, Hari; Schofield, Steven R.; Curson, Neil J.; Li, Juerong; Murdin, Ben N.; Fisher, Andrew J.; Aeppli, Gabriel

2018-04-01

Doping of silicon via phosphine exposures alternating with molecular beam epitaxy overgrowth is a path to Si:P substrates for conventional microelectronics and quantum information technologies. The technique also provides a well-controlled material for systematic studies of two-dimensional lattices with a half-filled band. We show here that for a dense (ns=2.8 ×1014 cm-2) disordered two-dimensional array of P atoms, the full field magnitude and angle-dependent magnetotransport is remarkably well described by classic weak localization theory with no corrections due to interaction. The two- to three-dimensional crossover seen upon warming can also be interpreted using scaling concepts developed for anistropic three-dimensional materials, which work remarkably except when the applied fields are nearly parallel to the conducting planes.

Advanced Microelectronics Technologies for Future Small Satellite Systems

NASA Technical Reports Server (NTRS)

Alkalai, Leon

1999-01-01

Future small satellite systems for both Earth observation as well as deep-space exploration are greatly enabled by the technological advances in deep sub-micron microelectronics technologies. Whereas these technological advances are being fueled by the commercial (non-space) industries, more recently there has been an exciting new synergism evolving between the two otherwise disjointed markets. In other words, both the commercial and space industries are enabled by advances in low-power, highly integrated, miniaturized (low-volume), lightweight, and reliable real-time embedded systems. Recent announcements by commercial semiconductor manufacturers to introduce Silicon On Insulator (SOI) technology into their commercial product lines is driven by the need for high-performance low-power integrated devices. Moreover, SOI has been the technology of choice for many space semiconductor manufacturers where radiation requirements are critical. This technology has inherent radiation latch-up immunity built into the process, which makes it very attractive to space applications. In this paper, we describe the advanced microelectronics and avionics technologies under development by NASA's Deep Space Systems Technology Program (also known as X2000). These technologies are of significant benefit to both the commercial satellite as well as the deep-space and Earth orbiting science missions. Such a synergistic technology roadmap may truly enable quick turn-around, low-cost, and highly capable small satellite systems for both Earth observation as well as deep-space missions.

Vertical and bevel-structured SiC etching techniques incorporating different gas mixture plasmas for various microelectronic applications.

PubMed

Sung, Ho-Kun; Qiang, Tian; Yao, Zhao; Li, Yang; Wu, Qun; Lee, Hee-Kwan; Park, Bum-Doo; Lim, Woong-Sun; Park, Kyung-Ho; Wang, Cong

2017-06-20

This study presents a detailed fabrication method, together with validation, discussion, and analysis, for state-of-the-art silicon carbide (SiC) etching of vertical and bevelled structures by using inductively coupled plasma reactive ion etching (ICP-RIE) for microelectronic applications. Applying different gas mixtures, a maximum bevel angle of 87° (almost vertical), large-angle bevels ranging from 40° to 80°, and small-angel bevels ranging from 7° to 17° were achieved separately using distinct gas mixtures at different ratios. We found that SF 6 with additive O 2 was effective for vertical etching, with a best etching rate of 3050 Å/min. As for the large-angle bevel structures, BCl 3  + N 2 gas mixtures show better characteristics, exhibiting a controllable and large etching angle range from 40° to 80° through the adjustment of the mixture ratio. Additionally, a Cl 2  + O 2 mixture at different ratios is applied to achieve a small-angel bevels ranging from 7° to 17°. A minimum bevel angel of approximately 7° was achieved under the specific volume of 2.4 sccm Cl 2 and 3.6 sccm O 2 . These results can be used to improve performance in various microelectronic applications including MMIC via holes, PIN diodes, Schottky diodes, JFETs' bevel mesa, and avalanche photodiode fabrication.

Chemical vapor deposition of silicon, silicon dioxide, titanium and ferroelectric thin films

NASA Astrophysics Data System (ADS)

Chen, Feng

Various silicon-based thin films (such as epitaxial, polycrystalline and amorphous silicon thin films, silicon dioxide thin films and silicon nitride thin films), titanium thin film and various ferroelectric thin films (such as BaTiO3 and PbTiO3 thin films) play critical roles in the manufacture of microelectronics circuits. For the past few years, there have been tremendous interests to search for cheap, safe and easy-to-use methods to develop those thin films with high quality and good step coverage. Silane is a critical chemical reagent widely used to deposit silicon-based thin films. Despite its wide use, silane is a dangerous material. It is pyrophoric, extremely flammable and may explode from heat, shock and/or friction. Because of the nature of silane, serious safety issues have been raised concerning the use, transportation, and storage of compressed gas cylinders of silane. Therefore it is desired to develop safer ways to deposit silicon-based films. In chapter III, I present the results of our research in the following fields: (1) Silane generator, (2) Substitutes of silane for deposition of silicon and silicon dioxide thin films, (3) Substitutes of silane for silicon dioxide thin film deposition. In chapter IV, hydropyridine is introduced as a new ligand for use in constructing precursors for chemical vapor deposition. Detachement of hydropyridine occurs by a low-temperature reaction leaving hydrogen in place of the hydropyridine ligands. Hydropyridine ligands can be attached to a variety of elements, including main group metals, such as aluminum and antimony, transition metals, such as titanium and tantalum, semiconductors such as silicon, and non-metals such as phosphorus and arsenic. In this study, hydropyridine-containing titanium compounds were synthesized and used as chemical vapor deposition precursors for deposition of titanium containing thin films. Some other titanium compounds were also studied for comparison. In chapter V, Chemical Vapor Depositions (CVD) of many oxide thin films including ferroelectric and high dielectric constant BaTiO3, SrTiO 3 and PbTiO3 films had been carried out under reduced pressure (30 torr--80 torr) using liquid precursors containing beta-diketone ligands. The relative reactivities of Ba(beta-diketonate)2, Sr(beta-diketonate) 2, Pb(beta-diketonate)2, Ti(beta-diketonate)3, TiO(beta-diketonate)2 and Ti(OiPr)2(beta-diketonate) 2 had been studied individually prior to the deposition of BaTiO 3, SrTiO3 and PbTiO3 thin films from the mixtures of corresponding precursors. By using multi-step deposition method, carbon free stoichiometric BaTiO3 thin films uniform in large area have been achieved.

Channel add-drop filter based on dual photonic crystal cavities in push-pull mode.

PubMed

Poulton, Christopher V; Zeng, Xiaoge; Wade, Mark T; Popović, Miloš A

2015-09-15

We demonstrate an add-drop filter based on a dual photonic crystal nanobeam cavity system that emulates the operation of a traveling wave resonator, and, thus, provides separation of the through and drop port transmission from the input port. The device is on a 3×3  mm chip fabricated in an advanced microelectronics silicon-on-insulator complementary metal-oxide semiconductor (SOI CMOS) process (IBM 45 nm SOI) without any foundry process modifications. The filter shows 1 dB of insertion loss in the drop port with a 3 dB bandwidth of 64 GHz, and 16 dB extinction in the through port. To the best of our knowledge, this is the first implementation of a port-separating, add-drop filter based on standing wave cavities coupled to conventional waveguides, and demonstrates a performance that suggests potential for photonic crystal devices within optical immersion lithography-based advanced CMOS electronics-photonics integration.

Fabrication of Refractive Index Tunable Polydimethylsiloxane Photonic Crystal for Biosensor Application

NASA Astrophysics Data System (ADS)

Raman, Karthik; Murthy, T. R. Srinivasa; Hegde, G. M.

Photonic crystal based nanostructures are expected to play a significant role in next generation nanophotonic devices. Recent developments in two-dimensional (2D) photonic crystal based devices have created widespread interest as such planar photonic structures are compatible with conventional microelectronic and photonic devices. Various optical components such as waveguides, resonators, modulators and demultiplexers have been designed and fabricated based on 2D photonic crystal geometry. This paper presents the fabrication of refractive index tunable Polydimethylsiloxane (PDMS) polymer based photonic crystals. The advantages of using PDMS are mainly its chemical stability, bio-compatibility and the stack reduces sidewall roughness scattering. The PDMS structure with square lattice was fabricated by using silicon substrate patterned with SU8-2002 resist. The 600 nm period grating of PDMS is then fabricated using Nano-imprinting. In addition, the refractive index of PDMS is modified using certain additive materials. The resulting photonic crystals are suitable for application in photonic integrated circuits and biological applications such as filters, cavities or microlaser waveguides.

InP on SOI devices for optical communication and optical network on chip

NASA Astrophysics Data System (ADS)

Fedeli, J.-M.; Ben Bakir, B.; Olivier, N.; Grosse, Ph.; Grenouillet, L.; Augendre, E.; Phillippe, P.; Gilbert, K.; Bordel, D.; Harduin, J.

2011-01-01

For about ten years, we have been developing InP on Si devices under different projects focusing first on μlasers then on semicompact lasers. For aiming the integration on a CMOS circuit and for thermal issue, we relied on SiO2 direct bonding of InP unpatterned materials. After the chemical removal of the InP substrate, the heterostructures lie on top of silicon waveguides of an SOI wafer with a separation of about 100nm. Different lasers or photodetectors have been achieved for off-chip optical communication and for intra-chip optical communication within an optical network. For high performance computing with high speed communication between cores, we developed InP microdisk lasers that are coupled to silicon waveguide and produced 100μW of optical power and that can be directly modulated up to 5G at different wavelengths. The optical network is based on wavelength selective circuits with ring resonators. InGaAs photodetectors are evanescently coupled to the silicon waveguide with an efficiency of 0.8A/W. The fabrication has been demonstrated at 200mm wafer scale in a microelectronics clean room for CMOS compatibility. For off-chip communication, silicon on InP evanescent laser have been realized with an innovative design where the cavity is defined in silicon and the gain localized in the QW of bonded InP hererostructure. The investigated devices operate at continuous wave regime with room temperature threshold current below 100 mA, the side mode suppression ratio is as high as 20dB, and the fibercoupled output power is {7mW. Direct modulation can be achieved with already 6G operation.

Synchrotron-based measurement of the impact of thermal cycling on the evolution of stresses in Cu through-silicon vias

DOE Office of Scientific and Technical Information (OSTI.GOV)

Okoro, Chukwudi, E-mail: chukwudi.okoro@nist.gov; Obeng, Yaw; Levine, Lyle E.

2014-06-28

One of the main causes of failure during the lifetime of microelectronics devices is their exposure to fluctuating temperatures. In this work, synchrotron-based X-ray micro-diffraction is used to study the evolution of stresses in copper through-silicon via (TSV) interconnects, “as-received” and after 1000 thermal cycles. For both test conditions, significant fluctuations in the measured normal and shear stresses with depth are attributed to variations in the Cu grain orientation. Nevertheless, the mean hydrostatic stresses in the “as-received” Cu TSV were very low, at (16 ± 44) MPa, most likely due to room temperature stress relaxation. In contrast, the mean hydrostatic stresses alongmore » the entire length of the Cu TSV that had undergone 1000 thermal cycles (123 ± 37) MPa were found to be eight times greater, which was attributed to increased strain-hardening. The evolution in stresses with thermal cycling is a clear indication that the impact of Cu TSVs on front-end-of-line (FEOL) device performance will change through the lifetime of the 3D stacked dies, and ought to be accounted for during FEOL keep-out-zone design rules development.« less

Mechanical integrity of a carbon nanotube/copper-based through-silicon via for 3D integrated circuits: a multi-scale modeling approach.

PubMed

Awad, Ibrahim; Ladani, Leila

2015-12-04

Carbon nanotube (CNT)/copper (Cu) composite material is proposed to replace Cu-based through-silicon vias (TSVs) in micro-electronic packages. The proposed material is believed to offer extraordinary mechanical and electrical properties and the presence of CNTs in Cu is believed to overcome issues associated with miniaturization of Cu interconnects, such as electromigration. This study introduces a multi-scale modeling of the proposed TSV in order to evaluate its mechanical integrity under mechanical and thermo-mechanical loading conditions. Molecular dynamics (MD) simulation was used to determine CNT/Cu interface adhesion properties. A cohesive zone model (CZM) was found to be most appropriate to model the interface adhesion, and CZM parameters at the nanoscale were determined using MD simulation. CZM parameters were then used in the finite element analysis in order to understand the mechanical and thermo-mechanical behavior of composite TSV at micro-scale. From the results, CNT/Cu separation does not take place prior to plastic deformation of Cu in bending, and separation does not take place when standard thermal cycling is applied. Further investigation is recommended in order to alleviate the increased plastic deformation in Cu at the CNT/Cu interface in both loading conditions.

Contributions to the initial development of a microelectromechanical loop heat pipe, which is based on coherent porous silicon

NASA Astrophysics Data System (ADS)

Cytrynowicz, Debra G.

The research project itself was the initiation of the development of a planar miniature loop heat pipe based on a capillary wick structure made of coherent porous silicon. Work on this project fell into four main categories, which were component fabrication, test system construction, characterization testing and test data collection, performance analysis and thermal modeling. Component fabrication involved the production of various components for the evaporator. When applicable, these components were to be produced by microelectronic and MEMS or microelectromechanical fabrication techniques. Required work involved analyses and, where necessary, modifications to the wafer processing sequence, the photo-electrochemical etching process, system and controlling computer program to make it more reliable, flexible and efficient. The development of more than one wick production process was also extremely necessary in the event of equipment failure. Work on developing this alternative also involved investigations into various details of the photo-electrochemical etching process itself. Test system construction involved the actual assembly of open and closed loop test systems. Characterization involved developing and administering a series of tests to evaluate the performance of the wicks and test systems. Although there were some indications that the devices were operating according to loop heat pipe theory, they were transient and unstable. Performance analysis involved the construction of a transparent evaporator, which enabled the visual observation of the phenomena, which occurred in the evaporator during operation. It also involved investigating the effect of the quartz wool secondary wick on the operation of the device. Observations made during the visualization study indicated that the capillary and boiling limits were being reached at extremely low values of input power. The work was performed in a collaborative effort between the Biomedical Nanotechnology Research Laboratory at the University of Toledo, the Center for Microelectronics and Sensors and MEMS at the University of Cincinnati and the Thermo-Mechanical Systems Branch of the Power and On-Board Propulsion Division at the John H. Glenn Research Center of the National Aeronautics and Space Administration in Cleveland, Ohio. Work on the project produced six publications, which presented various details on component fabrication, tests system construction and characterization and thermal modeling.

The Impact of Dopant Segregation on the Maximum Carrier Density in Si:P Multilayers.

PubMed

Keizer, Joris G; McKibbin, Sarah R; Simmons, Michelle Y

2015-07-28

Abrupt dopant profiles and low resistivity are highly sought after qualities in the silicon microelectronics industry and, more recently, in the development of an all epitaxial Si:P based quantum computer. If we increase the active carrier density in silicon to the point where the material becomes superconducting, while maintaining a low thermal budget, it will be possible to fabricate nanoscale superconducting devices using the highly successful technique of depassivation lithography. In this work, we investigate the dopant profile and activation in multiple high density Si:P δ-layers fabricated by stacking individual layers with intervening silicon growth. We determine that dopant activation is ultimately limited by the formation of P-P dimers due to the segregation of dopants between multilayers. By increasing the encapsulation thickness between subsequent layers, thereby minimizing the formation of these deactivating defects, we are able to achieve an active carrier density of ns = 4.5 ×10(14) cm(-2) for a triple layer. The results of electrical characterization are combined with those of secondary ion mass spectroscopy to construct a model that accurately describes the impact of P segregation on the final active carrier density in Si:P multilayers. Our model predicts that a 3D active carrier density of 8.5 × 10(20) cm(-3) (1.7 atom %) can be achieved.

A Novel Silicon Micromachined Integrated MCM Thermal Management System

NASA Technical Reports Server (NTRS)

Kazmierczak, M. J.; Henderson, H. T.; Gerner, F. M.

1997-01-01

"Micromachining" is a chemical means of etching three-dimensional structures, typically in single- crystalline silicon. These techniques are leading toward what is coming to be referred to as MEMS (Micro Electro Mechanical Systems), where in addition to the ordinary two-dimensional (planar) microelectronics, it is possible to build three-dimensional n-ticromotors, electrically- actuated raicrovalves, hydraulic systems and much more on the same microchip. These techniques become possible because of differential etching rates of various crystallographic planes and materials used for semiconductor n-ticrofabfication. The University of Cincinnati group in collaboration with Karl Baker at NASA Lewis were the first to form micro heat pipes in silicon by the above techniques. Current work now in progress using MEMS technology is now directed towards the development of the next generation in MCM (Multi Chip Module) packaging. Here we propose to develop a complete electronic thermal management system which will allow densifica6on in chip stacking by perhaps two orders of magnitude. Furthermore the proposed technique will allow ordinary conu-nercial integrated chips to be utilized. Basically, the new technique involves etching square holes into a silicon substrate and then inserting and bonding commercially available integrated chips into these holes. For example, over a 100 1/4 in. by 1 /4 in. integrated chips can be placed on a 4 in. by 4 in. silicon substrate to form a Multi-Chip Module (MCM). Placing these MCM's in-line within an integrated rack then allows for three-diniensional stacking. Increased miniaturization of microelectronic circuits will lead to very high local heat fluxes. A high performance thermal management system will be specifically designed to remove the generated energy. More specifically, a compact heat exchanger with milli / microchannels will be developed and tested to remove the heat through the back side of this MCM assembly for moderate and high heat flux applications, respectively. The high heat load application of particular interest in mind is the motor controller developed by Martin Marietta for Nasa to control the thruster's directional actuators on space vechicles. Work is also proposed to develop highly advanced and improved porous wick structures for use in advanced heat loops. The porous wick will be micromachined from silicon using MEMS technology, thus permitting far superior control of pore size and pore distribution (over wicks made from sintered n-ietals), which in turn is expected to led to significantly improved heat loop performance.

Nanostructured silicon for thermoelectric

NASA Astrophysics Data System (ADS)

Stranz, A.; Kähler, J.; Waag, A.; Peiner, E.

2011-06-01

Thermoelectric modules convert thermal energy into electrical energy and vice versa. At present bismuth telluride is the most widely commercial used material for thermoelectric energy conversion. There are many applications where bismuth telluride modules are installed, mainly for refrigeration. However, bismuth telluride as material for energy generation in large scale has some disadvantages. Its availability is limited, it is hot stable at higher temperatures (>250°C) and manufacturing cost is relatively high. An alternative material for energy conversion in the future could be silicon. The technological processing of silicon is well advanced due to the rapid development of microelectronics in recent years. Silicon is largely available and environmentally friendly. The operating temperature of silicon thermoelectric generators can be much higher than of bismuth telluride. Today silicon is rarely used as a thermoelectric material because of its high thermal conductivity. In order to use silicon as an efficient thermoelectric material, it is necessary to reduce its thermal conductivity, while maintaining high electrical conductivity and high Seebeck coefficient. This can be done by nanostructuring into arrays of pillars. Fabrication of silicon pillars using ICP-cryogenic dry etching (Inductive Coupled Plasma) will be described. Their uniform height of the pillars allows simultaneous connecting of all pillars of an array. The pillars have diameters down to 180 nm and their height was selected between 1 micron and 10 microns. Measurement of electrical resistance of single silicon pillars will be presented which is done in a scanning electron microscope (SEM) equipped with nanomanipulators. Furthermore, measurement of thermal conductivity of single pillars with different diameters using the 3ω method will be shown.

Electric Field Control of Magnetism Using BiFeO3-Based Heterostructures

DTIC Science & Technology

2014-04-22

dissipation in the form of heat has become a center stage issue for the microelectronics industry. By taking advantage of the strong correlations...speed and storage density, significant energy dissipation in the form of heat has become a center stage issue for the microelectronics industry. By...and storage density, significant energy dissipation in the form of heat has become a center stage issue for the microelectronics industry. By taking

Three-dimensional polymer MEMS with functionalized carbon nanotubes by microstereolithography

NASA Astrophysics Data System (ADS)

Varadan, Vijay K.; Xie, Jining

2003-04-01

Microfabrication techniques such as bulk micromachining and surface micromachining currently employed to conceive MEMS are largely derived from the standard IC and microelectronics technology. Even though many MEMS devices with integrated electronics have been achieved by using the traditional micromachining techniques, some limitations have nevertheless to be underlined: 1) these techniques are very expensive and need specific installations as well as a cleanroom environment, 2) the materials that can be used up to now are restricted to silicon and metals, 3) the manufacture of 3D parts having curved surfaces or an important number of layers is not possible. Moreover, for some biological applications, the materials used for sensors must be compatible with human body and the actuators need to have high strain and displacement which the current silicon based MEMS do not provide. It is thus natural for the researchers to look for alternative methods such as Microstereolithography (MSL) to make 3D sensors and actuators using polymeric based materials. For MSL techniques to be successful as their silicon counterparts, one has to come up with multifunctional polymers with electrical properties comparable to silicon. These multifunctional polymers should not only have a high sensing capability but also a high strain and actuation performance. A novel UV-curable polymer uniformly bonded with functionalised nanotubes was synthesized via a modified three-step in-situ polymerization. Purified multi-walled nanotubes, gained from the microwave chemical vapor deposition method, were functionalised by oxidation. The UV curable polymer was prepared from toluene diisocyantae (TDI), functionalised nanotubes, and 2-hydroxyethyl methacrylate (HEMA). The chemical bonds between -NCO groups of TDI and -OH, -COOH groups of functionalised nanotubes help for conceiving polymeric based MEMS devices. A cost effective fabrication techniques was presented using Micro Stereo Lithography and an example of a micropump was also described. The wireless concept of the device has many applications including implanted medical delivery systems, chemical and biological instruments, fluid delivery in engines, pump coolants and refrigerants for local cooling of electronic components.

Three-dimensional polymer MEMS with functionalized carbon nanotubes by microstereolithography

NASA Astrophysics Data System (ADS)

Varadan, Vijay K.; Xie, Jining

2002-11-01

Microfabrication techniques such as bulk micromachining and surface micromachining currently employed to conceive MEMS are largely derived from the standard IC and microelectronics technology. Even though many MEMS devices with integrated electronics have been achieved by using the traditional micromachining techniques, some limitations have nevertheless to be underlined: 1) these techniques are very expensive and need specific installations as well as a cleanroom environment, 2) the materials that can be used up to now are restricted to silicon and metals, 3) the manufacture of 3D parts having curved surfaces or an important numberof layers is not possible. Moreover, for some biological applications, the materials used for sensors must be compatible with human body and the actuators need to have high strain and displacement which the current silicon based MEMS do not provide. It is thus natural for the researchers to 'look' for alternative methods such as Microstereolithography (MSL) to make 3D sensors and actuators using polymeric based materials. For MSL techniques to be successful as their silicon counterparts, one has to come up with multifunctional polyers with electrical properties comparable to silicon. These multifunctional polymers should not only have a high sensing capability but also a high strain and actuation performance. A novel UV-curable polymer uniformly bonded with functionalized nanotubes was synthesized via a modified three-step in-sity polumerization. Purified multi-walled nanotubes, gained from the microwave chemical vapor deposition method, were functionalized by oxidation. The UV curable polymer was prepared from toluene diisocyanate (TDI), functionalized nanotubes, and 2-hydroxyethyl methacrylate (HEMA). The chemical bonds between -NCO groups of TDI and -OH, -COOH groups of functionalized nanotubes help for conceiving polymeric based MEMS devices. A cost effective fabrication techniques was presented using Micro Stereo Lithography and an example of a micropump was also described. The wireless concept of the device has many applications including implanted medical delivery systems, chemical and biological instruments, fluid delivery engines, pump coolants and refrigerants for local cooling of electronic components.

Three-dimensional polymer MEMS with functionalized carbon nanotubes by microstereolithography

NASA Astrophysics Data System (ADS)

Varadan, Vijay K.; Xie, Jining

2003-01-01

Microfabrication techniques such as bulk micromachining and surface micromachining currently employed to conceive MEMS are largely derived from the standard IC and microelectronics technology. Even though many MEMS devices with integrated electronics have been achieved by using the traditional micromachining techniques, some limitations have nevertheless to be underlined: 1) these techniques are very expensive and need specific installations as well as a cleanroom environment, 2) the materials that can be used up to now are restricted to silicon and metals, 3) the manufacture of 3D parts having curved surfaces or an important number of layers is not possible. Moreover, for some biological applications, the materials used for sensors must be compatible with human body and the actuators need to have high strain and displacement which the current silicon based MEMS do not provide. It is thus natural for the researchers to look for alternative methods such as Microstereolithography (MSL) to make 3D sensors and actuators using polymeric based materials. For MSL techniques to be successful as their silicon counterparts, one has to come up with multifunctional polymers with electrical properties comparable to silicon. These multifunctional polymers should not only have a high sensing capability but also a high strain and actuation performance. A novel UV-curable polymer uniformly bonded with functionalized nanotubes was synthesized via a modified three-step in-situ polymerization. Purified multi-walled nanotubes, gained from the microwave chemical vapor deposition method, were functionalized by oxidation. The UV curable polymer was prepared from toluene diisocyanate (TDI), functionalized nanotubes, and 2 hydroxyethyl methacrylate (HEMA). The chemical bonds between NCO groups of TDI and OH, COOH groups of functionalized nanotubes help for conceiving polymeric based MEMS devices. A cost effective fabrication techniques was presented using Micro Stereo Lithography and an example of a micropump was also described. The wireless concept of the device has many applications including implanted medical delivery systems, chemical and biological instruments, fluid delivery in engines, pump coolants and refrigerants for local cooling of electronic components.

Planar Fully-Depleted-Silicon-On-Insulator technologies: Toward the 28 nm node and beyond

NASA Astrophysics Data System (ADS)

Doris, B.; DeSalvo, B.; Cheng, K.; Morin, P.; Vinet, M.

2016-03-01

This paper presents a comprehensive overview of the research done in the last decade on planar Fully-Depleted-Silicon-On-Insulator (FDSOI) technologies in the frame of the joint development program between IBM, ST Microelectronics and CEA-LETI. In particular, we review the technological developments ranging from substrate engineering to process modules that enable functionality and improve FDSOI performance over several generations. Various multi Vt integration schemes to maximize the benefits of the thin BOX FDSOI platform are discussed. Manufacturability as well as scalability concerns are highlighted and addressed. In addition, this work provides understanding of the performance/power trade-offs for FDSOI circuits and device variability. Finally, clear directions for future application-specific products are given, demonstrating that FDSOI is an attractive CMOS option for next generation high performance and low-power applications.

Effects of doping Na and Cl atom on electronic structure of silicene: Density functional theory calculation

NASA Astrophysics Data System (ADS)

Pamungkas, Mauludi Ariesto; Sobirin, Kafi; Abdurrouf

2018-04-01

Silicene is a material in which silicon atoms are packed in two-dimensional hexagonal lattice, similar to that of graphene. Compared to graphene, silicene has promising potential to be applied in microelectronic technology because of its compatibility with silicon comonly used in semiconducting devices. Natrium and chlorine are easy to extract and can be used as dopants in FET (Field Effect Transistor). In this work, the effects of adsorption energy and electronic structure of silicene to both natrium and chlorine atoms are calculated with Density Functional Theory (DFT). The results show that dopings of Na transform silicene which is initially semimetal into a metal. Then dopings of Cl Top-site transform silicene into a semiconducting material and doping of Na and Cl simultaneously transfoms silicene into a conducting material.

RF plasma cleaning of silicon substrates with high-density polyethylene contamination

NASA Astrophysics Data System (ADS)

Cagomoc, Charisse Marie D.; De Leon, Mark Jeffry D.; Ebuen, Anna Sophia M.; Gilos, Marlo Nicole R.; Vasquez, Magdaleno R., Jr.

2018-01-01

Upon contact with a polymeric material, microparticles from the polymer may adhere to a silicon (Si) substrate during device processing. The adhesion contaminates the surface and, in turn, leads to defects in the fabricated Si-based microelectronic devices. In this study, Si substrates with artificially induced high-density polyethylene (HDPE) contamination was exposed to 13.56 MHz radio frequency (RF) plasma utilizing argon and oxygen gas admixtures at a power density of 5.6 W/cm2 and a working pressure of 110 Pa for up to 6 min of treatment. Optical microscopy studies revealed the removal of up to 74% of the polymer contamination upon plasma exposure. Surface free energy (SFE) increased owing to the removal of contaminants as well as the formation of polar groups on the Si surface after plasma treatment. Atomic force microscopy scans showed a decrease in surface roughness from 12.25 nm for contaminated samples to 0.77 nm after plasma cleaning. The smoothening effect can be attributed to the removal of HDPE particles from the surface. In addition, scanning electron microscope images showed that there was a decrease in the amount of HDPE contaminants adhering onto the surface after plasma exposure.

Uncooled Terahertz real-time imaging 2D arrays developed at LETI: present status and perspectives

NASA Astrophysics Data System (ADS)

Simoens, François; Meilhan, Jérôme; Dussopt, Laurent; Nicolas, Jean-Alain; Monnier, Nicolas; Sicard, Gilles; Siligaris, Alexandre; Hiberty, Bruno

2017-05-01

As for other imaging sensor markets, whatever is the technology, the commercial spread of terahertz (THz) cameras has to fulfil simultaneously the criteria of high sensitivity and low cost and SWAP (size, weight and power). Monolithic silicon-based 2D sensors integrated in uncooled THz real-time cameras are good candidates to meet these requirements. Over the past decade, LETI has been studying and developing such arrays with two complimentary technological approaches, i.e. antenna-coupled silicon bolometers and CMOS Field Effect Transistors (FET), both being compatible to standard silicon microelectronics processes. LETI has leveraged its know-how in thermal infrared bolometer sensors in developing a proprietary architecture for THz sensing. High technological maturity has been achieved as illustrated by the demonstration of fast scanning of large field of view and the recent birth of a commercial camera. In the FET-based THz field, recent works have been focused on innovative CMOS read-out-integrated circuit designs. The studied architectures take advantage of the large pixel pitch to enhance the flexibility and the sensitivity: an embedded in-pixel configurable signal processing chain dramatically reduces the noise. Video sequences at 100 frames per second using our 31x31 pixels 2D Focal Plane Arrays (FPA) have been achieved. The authors describe the present status of these developments and perspectives of performance evolutions are discussed. Several experimental imaging tests are also presented in order to illustrate the capabilities of these arrays to address industrial applications such as non-destructive testing (NDT), security or quality control of food.

Superconducting Microelectronics.

ERIC Educational Resources Information Center

Henry, Richard W.

1984-01-01

Discusses superconducting microelectronics based on the Josephson effect and its advantages over conventional integrated circuits in speed and sensitivity. Considers present uses in standards laboratories (voltage) and in measuring weak magnetic fields. Also considers future applications in superfast computer circuitry using Superconducting…

Negative-tone development of photoresists in environmentally friendly silicone fluids

NASA Astrophysics Data System (ADS)

Ouyang, Christine Y.; Lee, Jin-Kyun; Ober, Christopher K.

2012-03-01

The large amount of organic solvents and chemicals that are used in today's microelectronic fabrication process can lead to environmental, health and safety hazards. It is therefore necessary to design new materials and new processes to reduce the environmental impact of the lithographic process. In addition, as the feature sizes decrease, other issues such as pattern collapse, which is related to the undesirable high surface tension of the developers and rinse liquids, can occur and limit the resolution. In order to solve these issues, silicone fluids are chosen as alternative developing solvents in this paper. Silicone fluids, also known as linear methyl siloxanes, are a class of mild, non-polar solvents that are non-toxic, not ozone-depleting, and contribute little to global warming. They are considered as promising developers because of their environmental-friendliness and their unique physical properties such as low viscosity and low surface tension. Recently, there have been emerging interests in negative-tone development (NTD) due to its better ability in printing contact holes and trenches. It is also found that the performance of negative-tone development is closely related to the developing solvents. Silicone fluids are thus promising developers for NTD because of their non-polar nature and high contrast negative-tone images are expected with chemical amplification photoresists due to the high chemical contrast of chemical amplification. We have previously shown some successful NTD with conventional photoresists such as ESCAP in silicone fluids. In this paper, another commercially available TOK resist was utilized to study the NTD process in silicone fluids. Because small and non-polar molecules are intrinsically soluble in silicone fluids, we have designed a molecular glass resist for silicone fluids. Due to the low surface tension of silicone fluids, we are able achieve high aspect-ratio, high-resolution patterns without pattern collapse.

Reproductive Hazards Still Persist in the Microelectronics Industry: Increased Risk of Spontaneous Abortion and Menstrual Aberration among Female Workers in the Microelectronics Industry in South Korea.

PubMed

Kim, Inah; Kim, Myoung-Hee; Lim, Sinye

2015-01-01

Despite the global expansion of supply chains and changes to the production process, few studies since the mid-1990 s and 2000s have examined reproductive risks of the microelectronics industry; we examined the reproductive risks among female microelectronics workers in South Korea. Based on claim data from the National Health Insurance (2008-2012), we estimated age-specific rates of spontaneous abortion (SAB) and menstrual aberration (MA) among women aged 20 to 39 years. We compared data between microelectronics workers and three different control groups: economically inactive women, the working population as a whole, and workers employed in the bank industry. For an effect measure, age-stratified relative risks (RRs) were estimated. Female workers in the microelectronics industry showed significantly higher risk for SAB and MA compared to control groups. The RRs for SAB with reference to economically inactive women, working population, and bank workers in their twenties were 1.57, 1.40, and 1.37, respectively, and the RRs for MA among females in their twenties were 1.54, 1.38, and 1.48, respectively. For women in their thirties, RRs for SAB were 1.58, 1.67, and 1.13, and those for MA were 1.25, 1.35, and 1.23 compared to the three control populations, respectively. All RRs were statistically significant at a level of 0.05, except for the SAB case comparison with bank workers in their thirties. Despite technical innovations and health and safety measures, female workers in microelectronics industry in South Korea have high rates of SAB and MA, suggesting continued exposure to reproductive hazards. Further etiologic studies based on primary data collection and careful surveillance are required to confirm these results.

Enhanced lifetime for thin-dielectric microdischarge-arrays operating in DC

NASA Astrophysics Data System (ADS)

Dussart, Remi; Felix, Valentin; Overzet, Lawrence; Aubry, Olivier; Stolz, Arnaud; Lefaucheux, Philippe; Gremi-Univ Orleans-Cnrs Collaboration; University Of Texas At Dallas Collaboration

2016-09-01

Micro-hollow cathode discharge arrays using silicon as the cathode have a very limited lifetime because the silicon bubbles and initiates micro-arcing. To avoid this destructive behavior, the same configuration was kept but, another material was selected for the cathode. Using micro and nanotechnologies ordinarily used in microelectronic and MEMS device fabrication, we made arrays of cathode boundary layer (CBL)-type microreactors consisting of nickel electrodes separated by a 6 µm thick SiO2 layer. Microdischarges were ignited in arrays of 100 µm diameter holes at different pressures (200750 Torr) in different gases. Electrical and optical measurements were made to characterize the arrays. Unlike the microdischarges produced using silicon cathodes, the Ni cathode discharges remain very stable with essentially no micro-arcing. DC currents between 50 and 900 µA flowed through each microreactor with a discharge voltage of typically 200 V. Stable V-I characteristics showing both the normal and abnormal regimes were observed and are consistent with the spread of the plasma over the cathode area. Due to their stability and lifetime, new applications of these DC, CBL-type microreactors can now be envisaged.

Application of Self-Assembled Monolayers to the Electroless Metallization of High Aspect Ratio Vias for Microelectronics

NASA Astrophysics Data System (ADS)

Bernasconi, R.; Molazemhosseini, A.; Cervati, M.; Armini, S.; Magagnin, L.

2016-10-01

All-wet electroless metallization of through-silicon vias (TSVs) with a width of 5 μm and a 1:10 aspect ratio was carried out. Immersion in a n-(2-aminoethyl) 3-aminopropyl-trimethoxysilane (AEAPTMS) self-assembled monolayer (SAM) was used to enhance the adhesion between the metal film and substrate. Contact angle variation and atomic force microscopy were used to verify the formation of a SAM layer. A PdCl2 solution was later used to activate the silanized substrates, exploiting the affinity of the -NH3 functional group of AEAPTMS to palladium. A nickel-phosphorus-boron electroless bath was employed to deposit the first barrier layer onto silicon. The NiPB growth rate was evaluated on flat silicon wafers, while the structure of the coating obtained was investigated via glow discharge optical emission spectroscopy. Cross-sectional scanning electron microscope observations were carried out on metallized TSVs to characterize the NiPB seed, the Cu seed layer deposited with a second electroless step, and the Cu superfilling obtained with a commercial solution. Complete filling of TSV was achieved.

Nucleation and atomic layer reaction in nickel silicide for defect-engineered Si nanochannels.

PubMed

Tang, Wei; Picraux, S Tom; Huang, Jian Yu; Gusak, Andriy M; Tu, King-Ning; Dayeh, Shadi A

2013-06-12

At the nanoscale, defects can significantly impact phase transformation processes and change materials properties. The material nickel silicide has been the industry standard electrical contact of silicon microelectronics for decades and is a rich platform for scientific innovation at the conjunction of materials and electronics. Its formation in nanoscale silicon devices that employ high levels of strain, intentional, and unintentional twins or grain boundaries can be dramatically different from the commonly conceived bulk processes. Here, using in situ high-resolution transmission electron microscopy (HRTEM), we capture single events during heterogeneous nucleation and atomic layer reaction of nickel silicide at various crystalline boundaries in Si nanochannels for the first time. We show through systematic experiments and analytical modeling that unlike other typical face-centered cubic materials such as copper or silicon the twin defects in NiSi2 have high interfacial energies. We observe that these twin defects dramatically change the behavior of new phase nucleation and can have direct implications for ultrascaled devices that are prone to defects or may utilize them to improve device performance.

Phosphorus-doped glass proton exchange membranes for low temperature direct methanol fuel cells

NASA Astrophysics Data System (ADS)

Prakash, Shruti; Mustain, William E.; Park, SeongHo; Kohl, Paul A.

Phosphorus-doped silicon dioxide thin films were used as ion exchange membranes in low temperature proton exchange membrane fuel cells. Phosphorus-doped silicon dioxide glass (PSG) was deposited via plasma-enhanced chemical vapor deposition (PECVD). The plasma deposition of PSG films allows for low temperature fabrication that is compatible with current microelectronic industrial processing. SiH 4, PH 3 and N 2O were used as the reactant gases. The effect of plasma deposition parameters, substrate temperature, RF power, and chamber pressure, on the ionic conductivity of the PSG films is elucidated. PSG conductivities as high as 2.54 × 10 -4 S cm -1 were realized, which is 250 times higher than the conductivity of pure SiO 2 films (1 × 10 -6 S cm -1) under identical deposition conditions. The higher conductivity films were deposited at low temperature, moderate pressure, limited reactant gas flow rate, and high RF power.

High-fidelity readout and control of a nuclear spin qubit in silicon.

PubMed

Pla, Jarryd J; Tan, Kuan Y; Dehollain, Juan P; Lim, Wee H; Morton, John J L; Zwanenburg, Floris A; Jamieson, David N; Dzurak, Andrew S; Morello, Andrea

2013-04-18

Detection of nuclear spin precession is critical for a wide range of scientific techniques that have applications in diverse fields including analytical chemistry, materials science, medicine and biology. Fundamentally, it is possible because of the extreme isolation of nuclear spins from their environment. This isolation also makes single nuclear spins desirable for quantum-information processing, as shown by pioneering studies on nitrogen-vacancy centres in diamond. The nuclear spin of a (31)P donor in silicon is very promising as a quantum bit: bulk measurements indicate that it has excellent coherence times and silicon is the dominant material in the microelectronics industry. Here we demonstrate electrical detection and coherent manipulation of a single (31)P nuclear spin qubit with sufficiently high fidelities for fault-tolerant quantum computing. By integrating single-shot readout of the electron spin with on-chip electron spin resonance, we demonstrate quantum non-demolition and electrical single-shot readout of the nuclear spin with a readout fidelity higher than 99.8 percent-the highest so far reported for any solid-state qubit. The single nuclear spin is then operated as a qubit by applying coherent radio-frequency pulses. For an ionized (31)P donor, we find a nuclear spin coherence time of 60 milliseconds and a one-qubit gate control fidelity exceeding 98 percent. These results demonstrate that the dominant technology of modern electronics can be adapted to host a complete electrical measurement and control platform for nuclear-spin-based quantum-information processing.

A new direct growth method of graphene on Si-face of 6H-SiC by synergy of the inner and external carbon sources

NASA Astrophysics Data System (ADS)

Yang, Zhiyuan; Xu, Shicai; Zhao, Lili; Zhang, Jing; Wang, Zhengping; Chen, Xiufang; Cheng, Xiufeng; Yu, Fapeng; Zhao, Xian

2018-04-01

Graphene is a promising two-dimensional material that has possible application in various disciplines, due to its super properties, including high carrier mobility, chemical stability, and optical transparency etc. In this paper, we report an inner and external carbon synergy (IECS) method to grow graphene on Si-face of 6H-SiC. This method combined the advantages of chemical vapor deposition (CVD) and traditional epitaxial growth (EG) based on silicon carbide, which providing a feasible approach for growing graphene on the SiC substrates. The graphene was synthesized within just 3 min, which was more than one order of magnitude faster than the graphene grown on 6H-SiC substrates by the traditional EG method. The growth temperature was ∼200 °C lower than the EG process. The directly grown graphene maintained the compatibility with the semiconductor technique, which is benefit for use in graphene-based microelectronic devices.

A hybrid magnetic/complementary metal oxide semiconductor three-context memory bit cell for non-volatile circuit design

NASA Astrophysics Data System (ADS)

Jovanović, B.; Brum, R. M.; Torres, L.

2014-04-01

After decades of continued scaling to the beat of Moore's law, it now appears that conventional silicon based devices are approaching their physical limits. In today's deep-submicron nodes, a number of short-channel and quantum effects are emerging that affect the manufacturing process, as well as, the functionality of the microelectronic systems-on-chip. Spintronics devices that exploit both the intrinsic spin of the electron and its associated magnetic moment, in addition to its fundamental electronic charge, are promising solutions to circumvent these scaling threats. Being compatible with the CMOS technology, such devices offer a promising synergy of radiation immunity, infinite endurance, non-volatility, increased density, etc. In this paper, we present a hybrid (magnetic/CMOS) cell that is able to store and process data both electrically and magnetically. The cell is based on perpendicular spin-transfer torque magnetic tunnel junctions (STT-MTJs) and is suitable for use in magnetic random access memories and reprogrammable computing (non-volatile registers, processor cache memories, magnetic field-programmable gate arrays, etc). To demonstrate the potential our hybrid cell, we physically implemented a small hybrid memory block using 45 nm × 45 nm round MTJs for the magnetic part and 28 nm fully depleted silicon on insulator (FD-SOI) technology for the CMOS part. We also report the cells measured performances in terms of area, robustness, read/write speed and energy consumption.

Application of laser driven fast high density plasma blocks for ion implantation

NASA Astrophysics Data System (ADS)

Sari, Amir H.; Osman, F.; Doolan, K. R.; Ghoranneviss, M.; Hora, H.; Höpfl, R.; Benstetter, G.; Hantehzadeh, M. H.

2005-10-01

The measurement of very narrow high density plasma blocks of high ion energy from targets irradiated with ps-TW laser pulses based on a new skin depth interaction process is an ideal tool for application of ion implantation in materials, especially of silicon, GaAs, or conducting polymers, for micro-electronics as well as for low cost solar cells. A further application is for ion sources in accelerators with most specifications of many orders of magnitudes advances against classical ion sources. We report on near band gap generation of defects by implantation of ions as measured by optical absorption spectra. A further connection is given for studying the particle beam transforming of n-type semiconductors into p-type and vice versa as known from sub-threshold particle beams. The advantage consists in the use of avoiding aggressive or rare chemical materials when using the beam techniques for industrial applications.

Miniaturized Environmental Monitoring Instrumentation

DOE Office of Scientific and Technical Information (OSTI.GOV)

C. B. Freidhoff

1997-09-01

The objective of the Mass Spectrograph on a Chip (MSOC) program is the development of a miniature, multi-species gas sensor fabricated using silicon micromachining technology which will be orders of magnitude smaller and lower power consumption than a conventional mass spectrometer. The sensing and discrimination of this gas sensor are based on an ionic mass spectrograph, using magnetic and/or electrostatic fields. The fields cause a spatial separation of the ions according to their respective mass-to-charge ratio. The fabrication of this device involves the combination of microelectronics with micromechanically built sensors and, ultimately, vacuum pumps. The prototype of a chemical sensormore » would revolutionize the method of performing environmental monitoring for both commercial and government applications. The portable unit decided upon was the miniaturized gas chromatograph with a mass spectrometer detector, referred to as a GC/MS in the analytical marketplace.« less

Two-dimensional high efficiency thin-film silicon solar cells with a lateral light trapping architecture.

PubMed

Fang, Jia; Liu, Bofei; Zhao, Ying; Zhang, Xiaodan

2014-08-22

Introducing light trapping structures into thin-film solar cells has the potential to enhance their solar energy harvesting as well as the performance of the cells; however, current strategies have been focused mainly on harvesting photons without considering the light re-escaping from cells in two-dimensional scales. The lateral out-coupled solar energy loss from the marginal areas of cells has reduced the electrical yield indeed. We therefore herein propose a lateral light trapping structure (LLTS) as a means of improving the light-harvesting capacity and performance of cells, achieving a 13.07% initial efficiency and greatly improved current output of a-Si:H single-junction solar cell based on this architecture. Given the unique transparency characteristics of thin-film solar cells, this proposed architecture has great potential for integration into the windows of buildings, microelectronics and other applications requiring transparent components.

Efficient 1535 nm light emission from an all-Si-based optical micro-cavity containing Er³⁺ and Yb³⁺ ions.

PubMed

Gallo, I B; Braud, A; Zanatta, A R

2013-11-18

This work reports on the construction and spectroscopic analyses of optical micro-cavities (OMCs) that efficiently emit at ~1535 nm. The emission wavelength matches the third transmission window of commercial optical fibers and the OMCs were entirely based on silicon. The sputtering deposition method was adopted in the preparation of the OMCs, which comprised two Bragg reflectors and one spacer layer made of either Er- or ErYb-doped amorphous silicon nitride. The luminescence signal extracted from the OMCs originated from the 4I(13/2)→<4I(15/2) transition (due to Er3 ions) and its intensity showed to be highly dependent on the presence of Yb3+ ions. According to the results, the Er3+-related light emission was improved by a factor of 48 when combined with Yb3+ ions and inserted in the spacer layer of the OMC. The results also showed the effectiveness of the present experimental approach in producing Si-based light-emitting structures in which the main characteristics are: (a) compatibility with the actual micro-electronics industry, (b) the deposition of optical quality layers with accurate composition control, and (c) no need of uncommon elements-compounds nor extensive thermal treatments. Along with the fundamental characteristics of the OMCs, this work also discusses the impact of the Er3+-Yb3+ ion interaction on the emission intensity as well as the potential of the present findings.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Sopori, B.

The 11th Workshop will provide a forum for an informal exchange of technical and scientific information between international researchers in the photovoltaic and non-photovoltaic fields. Discussions will include the various aspects of impurities and defects in silicon--their properties, the dynamics during device processing, and their application for developing low-cost processes for manufacturing high-efficiency silicon solar cells. Sessions and panel discussions will review impurities and defects in crystalline-silicon PV, advanced cell structures, new processes and process characterization techniques, and future manufacturing demands. The workshop will emphasize some of the promising new technologies in Si solar cell fabrication that can lower PVmore » energy costs and meet the throughput demands of the future. The three-day workshop will consist of presentations by invited speakers, followed by discussion sessions. Topics to be discussed are: Si Mechanical properties and Wafer Handling, Advanced Topics in PV Fundamentals, Gettering and Passivation, Impurities and Defects, Advanced Emitters, Crystalline Silicon Growth, and Solar Cell Processing. The workshop will also include presentations by NREL subcontractors who will review the highlights of their research during the current subcontract period. In addition, there will be two poster sessions presenting the latest research and development results. Some presentations will address recent technologies in the microelectronics field that may have a direct bearing on PV.« less

Nanoscale hotspots due to nonequilibrium thermal transport.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Sinha, Sanjiv; Goodson, Kenneth E.

2004-01-01

Recent experimental and modeling efforts have been directed towards the issue of temperature localization and hotspot formation in the vicinity of nanoscale heat generating devices. The nonequilibrium transport conditions which develop around these nanoscale devices results in elevated temperatures near the heat source which can not be predicted by continuum diffusion theory. Efforts to determine the severity of this temperature localization phenomena in silicon devices near and above room temperature are of technological importance to the development of microelectronics and other nanotechnologies. In this work, we have developed a new modeling tool in order to explore the magnitude of themore » additional thermal resistance which forms around nanoscale hotspots from temperatures of 100-1000K. The models are based on a two fluid approximation in which thermal energy is transferred between ''stationary'' optical phonons and fast propagating acoustic phonon modes. The results of the model have shown excellent agreement with experimental results of localized hotspots in silicon at lower temperatures. The model predicts that the effect of added thermal resistance due to the nonequilibrium phonon distribution is greatest at lower temperatures, but is maintained out to temperatures of 1000K. The resistance predicted by the numerical code can be easily integrated with continuum models in order to predict the temperature distribution around nanoscale heat sources with improved accuracy. Additional research efforts also focused on the measurements of the thermal resistance of silicon thin films at higher temperatures, with a focus on polycrystalline silicon. This work was intended to provide much needed experimental data on the thermal transport properties for micro and nanoscale devices built with this material. Initial experiments have shown that the exposure of polycrystalline silicon to high temperatures may induce recrystallization and radically increase the thermal transport properties at room temperature. In addition, the defect density was observed to play a major role in the rate of change in thermal resistivity as a function of temperature.« less

Stepwise mechanism and H2O-assisted hydrolysis in atomic layer deposition of SiO2 without a catalyst.

PubMed

Fang, Guo-Yong; Xu, Li-Na; Wang, Lai-Guo; Cao, Yan-Qiang; Wu, Di; Li, Ai-Dong

2015-01-01

Atomic layer deposition (ALD) is a powerful deposition technique for constructing uniform, conformal, and ultrathin films in microelectronics, photovoltaics, catalysis, energy storage, and conversion. The possible pathways for silicon dioxide (SiO2) ALD using silicon tetrachloride (SiCl4) and water (H2O) without a catalyst have been investigated by means of density functional theory calculations. The results show that the SiCl4 half-reaction is a rate-determining step of SiO2 ALD. It may proceed through a stepwise pathway, first forming a Si-O bond and then breaking Si-Cl/O-H bonds and forming a H-Cl bond. The H2O half-reaction may undergo hydrolysis and condensation processes, which are similar to conventional SiO2 chemical vapor deposition (CVD). In the H2O half-reaction, there are massive H2O molecules adsorbed on the surface, which can result in H2O-assisted hydrolysis of the Cl-terminated surface and accelerate the H2O half-reaction. These findings may be used to improve methods for the preparation of SiO2 ALD and H2O-based ALD of other oxides, such as Al2O3, TiO2, ZrO2, and HfO2.

Stepwise mechanism and H2O-assisted hydrolysis in atomic layer deposition of SiO2 without a catalyst

NASA Astrophysics Data System (ADS)

Fang, Guo-Yong; Xu, Li-Na; Wang, Lai-Guo; Cao, Yan-Qiang; Wu, Di; Li, Ai-Dong

2015-02-01

Atomic layer deposition (ALD) is a powerful deposition technique for constructing uniform, conformal, and ultrathin films in microelectronics, photovoltaics, catalysis, energy storage, and conversion. The possible pathways for silicon dioxide (SiO2) ALD using silicon tetrachloride (SiCl4) and water (H2O) without a catalyst have been investigated by means of density functional theory calculations. The results show that the SiCl4 half-reaction is a rate-determining step of SiO2 ALD. It may proceed through a stepwise pathway, first forming a Si-O bond and then breaking Si-Cl/O-H bonds and forming a H-Cl bond. The H2O half-reaction may undergo hydrolysis and condensation processes, which are similar to conventional SiO2 chemical vapor deposition (CVD). In the H2O half-reaction, there are massive H2O molecules adsorbed on the surface, which can result in H2O-assisted hydrolysis of the Cl-terminated surface and accelerate the H2O half-reaction. These findings may be used to improve methods for the preparation of SiO2 ALD and H2O-based ALD of other oxides, such as Al2O3, TiO2, ZrO2, and HfO2.

Modeling biology with HDL languages: a first step toward a genetic design automation tool inspired from microelectronics.

PubMed

Gendrault, Yves; Madec, Morgan; Lallement, Christophe; Haiech, Jacques

2014-04-01

Nowadays, synthetic biology is a hot research topic. Each day, progresses are made to improve the complexity of artificial biological functions in order to tend to complex biodevices and biosystems. Up to now, these systems are handmade by bioengineers, which require strong technical skills and leads to nonreusable development. Besides, scientific fields that share the same design approach, such as microelectronics, have already overcome several issues and designers succeed in building extremely complex systems with many evolved functions. On the other hand, in systems engineering and more specifically in microelectronics, the development of the domain has been promoted by both the improvement of technological processes and electronic design automation tools. The work presented in this paper paves the way for the adaptation of microelectronics design tools to synthetic biology. Considering the similarities and differences between the synthetic biology and microelectronics, the milestones of this adaptation are described. The first one concerns the modeling of biological mechanisms. To do so, a new formalism is proposed, based on an extension of the generalized Kirchhoff laws to biology. This way, a description of all biological mechanisms can be made with languages widely used in microelectronics. Our approach is therefore successfully validated on specific examples drawn from the literature.

Scalable Sub-micron Patterning of Organic Materials Toward High Density Soft Electronics.

PubMed

Kim, Jaekyun; Kim, Myung-Gil; Kim, Jaehyun; Jo, Sangho; Kang, Jingu; Jo, Jeong-Wan; Lee, Woobin; Hwang, Chahwan; Moon, Juhyuk; Yang, Lin; Kim, Yun-Hi; Noh, Yong-Young; Jaung, Jae Yun; Kim, Yong-Hoon; Park, Sung Kyu

2015-09-28

The success of silicon based high density integrated circuits ignited explosive expansion of microelectronics. Although the inorganic semiconductors have shown superior carrier mobilities for conventional high speed switching devices, the emergence of unconventional applications, such as flexible electronics, highly sensitive photosensors, large area sensor array, and tailored optoelectronics, brought intensive research on next generation electronic materials. The rationally designed multifunctional soft electronic materials, organic and carbon-based semiconductors, are demonstrated with low-cost solution process, exceptional mechanical stability, and on-demand optoelectronic properties. Unfortunately, the industrial implementation of the soft electronic materials has been hindered due to lack of scalable fine-patterning methods. In this report, we demonstrated facile general route for high throughput sub-micron patterning of soft materials, using spatially selective deep-ultraviolet irradiation. For organic and carbon-based materials, the highly energetic photons (e.g. deep-ultraviolet rays) enable direct photo-conversion from conducting/semiconducting to insulating state through molecular dissociation and disordering with spatial resolution down to a sub-μm-scale. The successful demonstration of organic semiconductor circuitry promise our result proliferate industrial adoption of soft materials for next generation electronics.

Scalable Sub-micron Patterning of Organic Materials Toward High Density Soft Electronics

NASA Astrophysics Data System (ADS)

Kim, Jaekyun; Kim, Myung-Gil; Kim, Jaehyun; Jo, Sangho; Kang, Jingu; Jo, Jeong-Wan; Lee, Woobin; Hwang, Chahwan; Moon, Juhyuk; Yang, Lin; Kim, Yun-Hi; Noh, Yong-Young; Yun Jaung, Jae; Kim, Yong-Hoon; Kyu Park, Sung

2015-09-01

The success of silicon based high density integrated circuits ignited explosive expansion of microelectronics. Although the inorganic semiconductors have shown superior carrier mobilities for conventional high speed switching devices, the emergence of unconventional applications, such as flexible electronics, highly sensitive photosensors, large area sensor array, and tailored optoelectronics, brought intensive research on next generation electronic materials. The rationally designed multifunctional soft electronic materials, organic and carbon-based semiconductors, are demonstrated with low-cost solution process, exceptional mechanical stability, and on-demand optoelectronic properties. Unfortunately, the industrial implementation of the soft electronic materials has been hindered due to lack of scalable fine-patterning methods. In this report, we demonstrated facile general route for high throughput sub-micron patterning of soft materials, using spatially selective deep-ultraviolet irradiation. For organic and carbon-based materials, the highly energetic photons (e.g. deep-ultraviolet rays) enable direct photo-conversion from conducting/semiconducting to insulating state through molecular dissociation and disordering with spatial resolution down to a sub-μm-scale. The successful demonstration of organic semiconductor circuitry promise our result proliferate industrial adoption of soft materials for next generation electronics.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Kim, Jaekyun; Kim, Myung -Gil; Kim, Jaehyun

The success of silicon based high density integrated circuits ignited explosive expansion of microelectronics. Although the inorganic semiconductors have shown superior carrier mobilities for conventional high speed switching devices, the emergence of unconventional applications, such as flexible electronics, highly sensitive photosensors, large area sensor array, and tailored optoelectronics, brought intensive research on next generation electronic materials. The rationally designed multifunctional soft electronic materials, organic and carbon-based semiconductors, are demonstrated with low-cost solution process, exceptional mechanical stability, and on-demand optoelectronic properties. Unfortunately, the industrial implementation of the soft electronic materials has been hindered due to lack of scalable fine-patterning methods. Inmore » this report, we demonstrated facile general route for high throughput sub-micron patterning of soft materials, using spatially selective deep-ultraviolet irradiation. For organic and carbon-based materials, the highly energetic photons (e.g. deep-ultraviolet rays) enable direct photo-conversion from conducting/semiconducting to insulating state through molecular dissociation and disordering with spatial resolution down to a sub-μm-scale. As a result, the successful demonstration of organic semiconductor circuitry promise our result proliferate industrial adoption of soft materials for next generation electronics.« less

Method of fabricating free-form, high-aspect ratio components for high-current, high-speed microelectrics

DOEpatents

Maxwell, James L; Rose, Chris R; Black, Marcie R; Springer, Robert W

2014-03-11

Microelectronic structures and devices, and method of fabricating a three-dimensional microelectronic structure is provided, comprising passing a first precursor material for a selected three-dimensional microelectronic structure into a reaction chamber at temperatures sufficient to maintain said precursor material in a predominantly gaseous state; maintaining said reaction chamber under sufficient pressures to enhance formation of a first portion of said three-dimensional microelectronic structure; applying an electric field between an electrode and said microelectronic structure at a desired point under conditions whereat said first portion of a selected three-dimensional microelectronic structure is formed from said first precursor material; positionally adjusting either said formed three-dimensional microelectronic structure or said electrode whereby further controlled growth of said three-dimensional microelectronic structure occurs; passing a second precursor material for a selected three-dimensional microelectronic structure into a reaction chamber at temperatures sufficient to maintain said precursor material in a predominantly gaseous state; maintaining said reaction chamber under sufficient pressures whereby a second portion of said three-dimensional microelectronic structure formation is enhanced; applying an electric field between an electrode and said microelectronic structure at a desired point under conditions whereat said second portion of a selected three-dimensional microelectronic structure is formed from said second precursor material; and, positionally adjusting either said formed three-dimensional microelectronic structure or said electrode whereby further controlled growth of said three-dimensional microelectronic structure occurs.

A cryogenic DAC operating down to 4.2 K

NASA Astrophysics Data System (ADS)

Rahman, M. T.; Lehmann, T.

2016-04-01

This paper presents a 10 bit CMOS current steering digital to analog converter (DAC) that operates from room temperature to as low as 4.2 K. It works as the core part of a cryogenic Silicon quantum computer controller circuit producing rapid control gate voltage pulses for quantum bits (qubits) initialization. An improved analog calibration method with a unique unit current cell design is included in the D/A converter structure to overcome the extended cryogenic nonlinear and mismatch effects. The DAC retains its 10 bit linear monotonic behavior over the wide temperature range and it drives a 50 Ω load to 516 mV with a full scale rise time of 10 ns. The differential non-linearity (DNL) of the converter is 0.35LSB while its average power consumption is 32.18 mW from a 3 V power supply. The complete converter is fabricated using a commercial 0.5 μm 1 poly 3 metal Silicon on Sapphire (SOS) CMOS process. He briefly worked as a Lecturer in the Stamford University Bangladesh prior to starting his Ph.D. in 2012 in the School of Electrical Engineering and Telecommunications, UNSW. His Ph.D. research is focused on cryogenic electronics for Quantum Computer Interface. His main research interests are in designing data converters for ultra-low temperature electronics and biomedical applications. He spent two years as a Research Fellow at the University of Edinburgh, U.K., where he worked with biologically inspired artificial neural systems. From 1997 to 2000, he was an Assistant Professor in electronics at the Technical University of Denmark, working with low-power low-noise low-voltage analog and mixed analog-digital integrated circuits. From 2001 to 2003 he was Principal Engineer with Cochlear Ltd., Australia, where he was involved in the design of the world's first fully implantable cochlear implant. Today he is Associate Professor in microelectronics at the University of New South Wales, Australia. He has authored over 100 journal papers, conference papers, book chapters and patents in microelectronic circuit design for a range of applications. His main research interests are in solid-state circuits and systems (analog and digital), biomedical microelectronics, ultra-low temperature electronics, nanometre CMOS, and green electronics.

Reproductive Hazards Still Persist in the Microelectronics Industry: Increased Risk of Spontaneous Abortion and Menstrual Aberration among Female Workers in the Microelectronics Industry in South Korea

PubMed Central

Kim, Inah; Kim, Myoung-Hee; Lim, Sinye

2015-01-01

Objectives Despite the global expansion of supply chains and changes to the production process, few studies since the mid-1990s and 2000s have examined reproductive risks of the microelectronics industry; we examined the reproductive risks among female microelectronics workers in South Korea. Methods Based on claim data from the National Health Insurance (2008–2012), we estimated age-specific rates of spontaneous abortion (SAB) and menstrual aberration (MA) among women aged 20 to 39 years. We compared data between microelectronics workers and three different control groups: economically inactive women, the working population as a whole, and workers employed in the bank industry. For an effect measure, age-stratified relative risks (RRs) were estimated. Results Female workers in the microelectronics industry showed significantly higher risk for SAB and MA compared to control groups. The RRs for SAB with reference to economically inactive women, working population, and bank workers in their twenties were 1.57, 1.40, and 1.37, respectively, and the RRs for MA among females in their twenties were 1.54, 1.38, and 1.48, respectively. For women in their thirties, RRs for SAB were 1.58, 1.67, and 1.13, and those for MA were 1.25, 1.35, and 1.23 compared to the three control populations, respectively. All RRs were statistically significant at a level of 0.05, except for the SAB case comparison with bank workers in their thirties. Conclusions Despite technical innovations and health and safety measures, female workers in microelectronics industry in South Korea have high rates of SAB and MA, suggesting continued exposure to reproductive hazards. Further etiologic studies based on primary data collection and careful surveillance are required to confirm these results. PMID:25938673

Probing Stress States in Silicon Nanowires During Electrochemical Lithiation Using In Situ Synchrotron X-Ray Microdiffraction

DOE PAGES

Ali, Imran; Tippabhotla, Sasi Kumar; Radchenko, Ihor; ...

2018-04-04

Silicon is considered as a promising anode material for the next-generation lithium-ion battery (LIB) due to its high capacity at nanoscale. However, silicon expands up to 300% during lithiation, which induces high stresses and leads to fractures. To design silicon nanostructures that could minimize fracture, it is important to understand and characterize stress states in the silicon nanostructures during lithiation. Synchrotron X-ray microdiffraction has proven to be effective in revealing insights of mechanical stress and other mechanics considerations in small-scale crystalline structures used in many important technological applications, such as microelectronics, nanotechnology, and energy systems. In the present study, anmore » in situ synchrotron X-ray microdiffraction experiment was conducted to elucidate the mechanical stress states during the first electrochemical cycle of lithiation in single-crystalline silicon nanowires (SiNWs) in an LIB test cell. Morphological changes in the SiNWs at different levels of lithiation were also studied using scanning electron microscope (SEM). It was found from SEM observation that lithiation commenced predominantly at the top surface of SiNWs followed by further progression toward the bottom of the SiNWs gradually. The hydrostatic stress of the crystalline core of the SiNWs at different levels of electrochemical lithiation was determined using the in situ synchrotron X-ray microdiffraction technique. We found that the crystalline core of the SiNWs became highly compressive (up to -325.5 MPa) once lithiation started. In conclusion, this finding helps unravel insights about mechanical stress states in the SiNWs during the electrochemical lithiation, which could potentially pave the path toward the fracture-free design of silicon nanostructure anode materials in the next-generation LIB.« less

Probing Stress States in Silicon Nanowires During Electrochemical Lithiation Using In Situ Synchrotron X-Ray Microdiffraction

DOE Office of Scientific and Technical Information (OSTI.GOV)

Ali, Imran; Tippabhotla, Sasi Kumar; Radchenko, Ihor

Silicon is considered as a promising anode material for the next-generation lithium-ion battery (LIB) due to its high capacity at nanoscale. However, silicon expands up to 300% during lithiation, which induces high stresses and leads to fractures. To design silicon nanostructures that could minimize fracture, it is important to understand and characterize stress states in the silicon nanostructures during lithiation. Synchrotron X-ray microdiffraction has proven to be effective in revealing insights of mechanical stress and other mechanics considerations in small-scale crystalline structures used in many important technological applications, such as microelectronics, nanotechnology, and energy systems. In the present study, anmore » in situ synchrotron X-ray microdiffraction experiment was conducted to elucidate the mechanical stress states during the first electrochemical cycle of lithiation in single-crystalline silicon nanowires (SiNWs) in an LIB test cell. Morphological changes in the SiNWs at different levels of lithiation were also studied using scanning electron microscope (SEM). It was found from SEM observation that lithiation commenced predominantly at the top surface of SiNWs followed by further progression toward the bottom of the SiNWs gradually. The hydrostatic stress of the crystalline core of the SiNWs at different levels of electrochemical lithiation was determined using the in situ synchrotron X-ray microdiffraction technique. We found that the crystalline core of the SiNWs became highly compressive (up to -325.5 MPa) once lithiation started. In conclusion, this finding helps unravel insights about mechanical stress states in the SiNWs during the electrochemical lithiation, which could potentially pave the path toward the fracture-free design of silicon nanostructure anode materials in the next-generation LIB.« less

Design, Fabrication, and Characterization of Carbon Nanotube Field Emission Devices for Advanced Applications

NASA Astrophysics Data System (ADS)

Radauscher, Erich Justin

Carbon nanotubes (CNTs) have recently emerged as promising candidates for electron field emission (FE) cathodes in integrated FE devices. These nanostructured carbon materials possess exceptional properties and their synthesis can be thoroughly controlled. Their integration into advanced electronic devices, including not only FE cathodes, but sensors, energy storage devices, and circuit components, has seen rapid growth in recent years. The results of the studies presented here demonstrate that the CNT field emitter is an excellent candidate for next generation vacuum microelectronics and related electron emission devices in several advanced applications. The work presented in this study addresses determining factors that currently confine the performance and application of CNT-FE devices. Characterization studies and improvements to the FE properties of CNTs, along with Micro-Electro-Mechanical Systems (MEMS) design and fabrication, were utilized in achieving these goals. Important performance limiting parameters, including emitter lifetime and failure from poor substrate adhesion, are examined. The compatibility and integration of CNT emitters with the governing MEMS substrate (i.e., polycrystalline silicon), and its impact on these performance limiting parameters, are reported. CNT growth mechanisms and kinetics were investigated and compared to silicon (100) to improve the design of CNT emitter integrated MEMS based electronic devices, specifically in vacuum microelectronic device (VMD) applications. Improved growth allowed for design and development of novel cold-cathode FE devices utilizing CNT field emitters. A chemical ionization (CI) source based on a CNT-FE electron source was developed and evaluated in a commercial desktop mass spectrometer for explosives trace detection. This work demonstrated the first reported use of a CNT-based ion source capable of collecting CI mass spectra. The CNT-FE source demonstrated low power requirements, pulsing capabilities, and average lifetimes of over 320 hours when operated in constant emission mode under elevated pressures, without sacrificing performance. Additionally, a novel packaged ion source for miniature mass spectrometer applications using CNT emitters, a MEMS based Nier-type geometry, and a Low Temperature Cofired Ceramic (LTCC) 3D scaffold with integrated ion optics were developed and characterized. While previous research has shown other devices capable of collecting ion currents on chip, this LTCC packaged MEMS micro-ion source demonstrated improvements in energy and angular dispersion as well as the ability to direct the ions out of the packaged source and towards a mass analyzer. Simulations and experimental design, fabrication, and characterization were used to make these improvements. Finally, novel CNT-FE devices were developed to investigate their potential to perform as active circuit elements in VMD circuits. Difficulty integrating devices at micron-scales has hindered the use of vacuum electronic devices in integrated circuits, despite the unique advantages they offer in select applications. Using a combination of particle trajectory simulation and experimental characterization, device performance in an integrated platform was investigated. Solutions to the difficulties in operating multiple devices in close proximity and enhancing electron transmission (i.e., reducing grid loss) are explored in detail. A systematic and iterative process was used to develop isolation structures that reduced crosstalk between neighboring devices from 15% on average, to nearly zero. Innovative geometries and a new operational mode reduced grid loss by nearly threefold, thereby improving transmission of the emitted cathode current to the anode from 25% in initial designs to 70% on average. These performance enhancements are important enablers for larger scale integration and for the realization of complex vacuum microelectronic circuits.

Silicon-based optoelectronics: Monolithic integration for WDM

NASA Astrophysics Data System (ADS)

Pearson, Matthew Richard T.

2000-10-01

This thesis details the development of enabling technologies required for inexpensive, monolithic integration of Si-based wavelength division multiplexing (WDM) components and photodetectors. The work involves the design and fabrication of arrayed waveguide grating demultiplexers in silicon-on-insulator (SOI), the development of advanced SiGe photodetectors capable of photodetection at 1.55 mum wavelengths, and the development of a low cost fabrication technique that enables the high volume production of Si-based photonic components. Arrayed waveguide grating (AWG) demultiplexers were designed and fabricated in SOI. The fabrication of AWGs in SOI has been reported in the literature, however there are a number of design issues specific to the SOI material system that can have a large effect on device performance and design, and have not been theoretically examined in earlier work. The SOI AWGs presented in this thesis are the smallest devices of this type reported, and they exhibit performance acceptable for commercial applications. The SiGe photodetectors reported in the literature exhibit extremely low responsivities at wavelengths near 1.55 mum. We present the first use of three dimensional growth modes to enhance the photoresponse of SiGe at 1.55 mum wavelengths. Metal semiconductor-metal (MSM) photodetectors were fabricated using this undulating quantum well structure, and demonstrate the highest responsivities yet reported for a SiGe-based photodetector at 1.55 mum. These detectors were monolithically integrated with low-loss SOI waveguides, enabling integration with nearly any Si-based passive WDM component. The pursuit of inexpensive Si-based photonic components also requires the development of new manufacturing techniques that are more suitable for high volume production. This thesis presents the development of a low cost fabrication technique based on the local oxidation of silicon (LOCOS), a standard processing technique used for Si integrated circuits. This process is developed for both SiGe and SOI waveguides, but is shown to be commercially suitable only for SOI waveguide devices. The technique allows nearly any Si microelectronics fabrication facility to begin manufacturing optical components with minimal change in processing equipment or techniques. These enabling technologies provide the critical elements for inexpensive, monolithic integration in a Si-based system.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Ji, Yanfeng; Hui, Fei; Shi, Yuanyuan

The atomic force microscope is one of the most widespread tools in science, but many suppliers do not provide a competitive solution to make experiments in controlled atmospheres. Here, we provide a solution to this problem by fabricating a fast-response and user-friendly environmental chamber. We corroborate the correct functioning of the chamber by studying the formation of local anodic oxidation on a silicon sample (biased under opposite polarities), an effect that can be suppressed by measuring in a dry nitrogen atmosphere. The usefulness of this chamber goes beyond the example here presented, and it could be used in many othermore » fields of science, including physics, mechanics, microelectronics, nanotechnology, medicine, and biology.« less

Microelectronics and nanotechnology, and the fractal-like structure of information, knowledge, and science

NASA Astrophysics Data System (ADS)

Nutu, Catalin Silviu; Axinte, Tiberiu

2016-12-01

The article is centralizing and is concentrating the information from a considerable amount of papers related to the field of microelectronics and nanotechnology and also provides an approach to science and to the future evolution of science, based on the theory of the fractals. The new science of microelectronics and nanotechnology is one of the best examples of how the science of future will look like, namely at the confluence of increasingly more other sciences, where increasingly more sciences are to be added in the structure of the new science and the role of the multidisciplinary and interdisciplinary is becoming more and more important. Although not giving explicit details (e.g. specific formulas) the theory of fractals is used in the paper to explain the way of generation of new science for the specific case of microelectronics and nanotechnology, but is also used in the paper to outline a different way to approach new science and eventually to approach new sciences to come. There are mainly two motivations for the present article, namely: on the one hand, the position of the microelectronics and nanotechnologies in the fractal-like structure of science, and, on the other hand, that much of the communication, information, knowledge and science transfer, dissemination and advancement in sciences are taking place using the new technologies related to microelectronics and nanotechnologies.

Hot Electron Injection into Uniaxially Strained Silicon

NASA Astrophysics Data System (ADS)

Kim, Hyun Soo

In semiconductor spintronics, silicon attracts great attention due to the long electron spin lifetime. Silicon is also one of the most commonly used semiconductor in microelectronics industry. The spin relaxation process of diamond crystal structure such as silicon is dominant by Elliot-Yafet mechanism. Yafet shows that intravalley scattering process is dominant. The conduction electron spin lifetime measured by electron spin resonance measurement and electronic measurement using ballistic hot electron method well agrees with Yafet's theory. However, the recent theory predicts a strong contribution of intervalley scattering process such as f-process in silicon. The conduction band minimum is close the Brillouin zone edge, X point which causes strong spin mixing at the conduction band. A recent experiment of electric field-induced hot electron spin relaxation also shows the strong effect of f-process in silicon. In uniaxially strained silicon along crystal axis [100], the suppression of f-process is predicted which leads to enhance electron spin lifetime. By inducing a change in crystal structure due to uniaxial strain, the six fold degeneracy becomes two fold degeneracy, which is valley splitting. As the valley splitting increases, intervalley scattering is reduced. A recent theory predicts 4 times longer electron spin lifetime in 0.5% uniaxially strained silicon. In this thesis, we demonstrate ballistic hot electron injection into silicon under various uniaxial strain. Spin polarized hot electron injection under strain is experimentally one of the most challenging part to measure conduction electron spin lifetime in silicon. Hot electron injection adopts tunnel junction which is a thin oxide layer between two conducting materials. Tunnel barrier, which is an oxide layer, is only 4 ˜ 5 nm thick. Also, two conducting materials are only tens of nanometer. Therefore, under high pressure to apply 0.5% strain on silicon, thin films on silicon substrate can be easily destroyed. In order to confirm the performance of tunnel junction, we use tunnel magnetoresistance(TMR). TMR consists of two kinds of ferromagnetic materials and an oxide layer as tunnel barrier in order to measure spin valve effect. Using silicon as a collector with Schottky barrier interface between metal and silicon, ballistic hot spin polarized electron injection into silicon is demonstrated. We also observed change of coercive field and magnetoresistance due to modification of local states in ferromagnetic materials and surface states at the interface between metal and silicon due to strain.

Fabrication and Doping Methods for Silicon Nano- and Micropillar Arrays for Solar-Cell Applications: A Review.

PubMed

Elbersen, Rick; Vijselaar, Wouter; Tiggelaar, Roald M; Gardeniers, Han; Huskens, Jurriaan

2015-11-18

Silicon is one of the main components of commercial solar cells and is used in many other solar-light-harvesting devices. The overall efficiency of these devices can be increased by the use of structured surfaces that contain nanometer- to micrometer-sized pillars with radial p/n junctions. High densities of such structures greatly enhance the light-absorbing properties of the device, whereas the 3D p/n junction geometry shortens the diffusion length of minority carriers and diminishes recombination. Due to the vast silicon nano- and microfabrication toolbox that exists nowadays, many versatile methods for the preparation of such highly structured samples are available. Furthermore, the formation of p/n junctions on structured surfaces is possible by a variety of doping techniques, in large part transferred from microelectronic circuit technology. The right choice of doping method, to achieve good control of junction depth and doping level, can contribute to an improvement of the overall efficiency that can be obtained in devices for energy applications. A review of the state-of-the-art of the fabrication and doping of silicon micro and nanopillars is presented here, as well as of the analysis of the properties and geometry of thus-formed 3D-structured p/n junctions. © 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Evaluation of elastic properties of nanoporous silicon oxide thin films by picosecond laser ultrasonics

NASA Astrophysics Data System (ADS)

Mechri, C.; Ruello, P.; Gusev, V.; Breteau, J. M.; Mounier, D.; Henderson, M.; Gibaud, A.; Dourdain, S.

2008-01-01

Picosecond laser ultrasonics uses femtosecond laser pulses for the generation and detection of acoustic pulses with a typical duration between few picoseconds and few hundreds of pico seconds. The shorter the duration of the acoustic pulse is, the more precisely could be made the measurements of the film thickness [C. Thomsen et al., Phys. Rev. B 34, 4129 (1986)] and the elastic modulus by pulse-echo method or through Brillouin scattering detection. In this short communication we report the results of the evaluation of the properties of nanoporous silicon oxide thin films which present potential low-k and thermal barrier properties and are also of great interest for the microelectronic industry to replace the traditional silicate glass films in order to decrease the resistance-capacitance transition delay in the VLSI circuits. Most of the studies that have been carried so far have treated the optical properties of such structures. We report the results of the evaluation of acoustic properties of nanoporous thin films.

Atomic characterization of Si nanoclusters embedded in SiO2 by atom probe tomography

PubMed Central

2011-01-01

Silicon nanoclusters are of prime interest for new generation of optoelectronic and microelectronics components. Physical properties (light emission, carrier storage...) of systems using such nanoclusters are strongly dependent on nanostructural characteristics. These characteristics (size, composition, distribution, and interface nature) are until now obtained using conventional high-resolution analytic methods, such as high-resolution transmission electron microscopy, EFTEM, or EELS. In this article, a complementary technique, the atom probe tomography, was used for studying a multilayer (ML) system containing silicon clusters. Such a technique and its analysis give information on the structure at the atomic level and allow obtaining complementary information with respect to other techniques. A description of the different steps for such analysis: sample preparation, atom probe analysis, and data treatment are detailed. An atomic scale description of the Si nanoclusters/SiO2 ML will be fully described. This system is composed of 3.8-nm-thick SiO layers and 4-nm-thick SiO2 layers annealed 1 h at 900°C. PMID:21711666

Tailoring femtosecond 1.5-μm Bessel beams for manufacturing high-aspect-ratio through-silicon vias

NASA Astrophysics Data System (ADS)

He, Fei; Yu, Junjie; Tan, Yuanxin; Chu, Wei; Zhou, Changhe; Cheng, Ya; Sugioka, Koji

2017-01-01

Three-dimensional integrated circuits (3D ICs) are an attractive replacement for conventional 2D ICs as high-performance, low-power-consumption, and small-footprint microelectronic devices. However, one of the major remaining challenges is the manufacture of high-aspect-ratio through-silicon vias (TSVs), which is a crucial technology for the assembly of 3D Si ICs. Here, we present the fabrication of high-quality TSVs using a femtosecond (fs) 1.5-μm Bessel beam. To eliminate the severe ablation caused by the sidelobes of a conventional Bessel beam, a fs Bessel beam is tailored using a specially designed binary phase plate. We demonstrate that the tailored fs Bessel beam can be used to fabricate a 2D array of approximately ∅10-μm TSVs on a 100-μm-thick Si substrate without any sidelobe damage, suggesting potential application in the 3D assembly of 3D Si ICs.

Tailoring femtosecond 1.5-μm Bessel beams for manufacturing high-aspect-ratio through-silicon vias.

PubMed

He, Fei; Yu, Junjie; Tan, Yuanxin; Chu, Wei; Zhou, Changhe; Cheng, Ya; Sugioka, Koji

2017-01-18

Three-dimensional integrated circuits (3D ICs) are an attractive replacement for conventional 2D ICs as high-performance, low-power-consumption, and small-footprint microelectronic devices. However, one of the major remaining challenges is the manufacture of high-aspect-ratio through-silicon vias (TSVs), which is a crucial technology for the assembly of 3D Si ICs. Here, we present the fabrication of high-quality TSVs using a femtosecond (fs) 1.5-μm Bessel beam. To eliminate the severe ablation caused by the sidelobes of a conventional Bessel beam, a fs Bessel beam is tailored using a specially designed binary phase plate. We demonstrate that the tailored fs Bessel beam can be used to fabricate a 2D array of approximately ∅10-μm TSVs on a 100-μm-thick Si substrate without any sidelobe damage, suggesting potential application in the 3D assembly of 3D Si ICs.

Low-temperature TCT characterization of heavily proton irradiated p-type magnetic Czochralski silicon detectors

NASA Astrophysics Data System (ADS)

Härkönen, J.; Tuovinen, E.; Luukka, P.; Kassamakov, I.; Autioniemi, M.; Tuominen, E.; Sane, P.; Pusa, P.; Räisänen, J.; Eremin, V.; Verbitskaya, E.; Li, Z.

2007-12-01

n +/p -/p + pad detectors processed at the Microelectronics Center of Helsinki University of Technology on boron-doped p-type high-resistivity magnetic Czochralski (MCz-Si) silicon substrates have been investigated by the transient current technique (TCT) measurements between 100 and 240 K. The detectors were irradiated by 9 MeV protons at the Accelerator Laboratory of University of Helsinki up to 1 MeV neutron equivalent fluence of 2×10 15 n/cm 2. In some of the detectors the thermal donors (TD) were introduced by intentional heat treatment at 430 °C. Hole trapping time constants and full depletion voltage values were extracted from the TCT data. We observed that hole trapping times in the order of 10 ns were found in heavily (above 1×10 15 n eq/cm 2) irradiated samples. These detectors could be fully depleted below 500 V in the temperature range of 140-180 K.

Controlling Kink Geometry in Nanowires Fabricated by Alternating Metal-Assisted Chemical Etching.

PubMed

Chen, Yun; Li, Liyi; Zhang, Cheng; Tuan, Chia-Chi; Chen, Xin; Gao, Jian; Wong, Ching-Ping

2017-02-08

Kinked silicon (Si) nanowires (NWs) have many special properties that make them attractive for a number of applications, such as microfluidics devices, microelectronic devices, and biosensors. However, fabricating NWs with controlled three-dimensional (3D) geometry has been challenging. In this work, a novel method called alternating metal-assisted chemical etching is reported for the fabrication of kinked Si NWs with controlled 3D geometry. By the use of multiple etchants with carefully selected composition, one can control the number of kinks, their locations, and their angles by controlling the number of etchant alternations and the time in each etchant. The resulting number of kinks equals the number times the etchant is alternated, the length of each segment separated by kinks has a linear relationship with the etching time, and the kinking angle is related to the surface tension and viscosity of the etchants. This facile method may provide a feasible and economical way to fabricate novel silicon nanowires, nanostructures, and devices for broad applications.

Nano-deformation behavior of silicon (100) film studied by depth sensing indentation and nanoscratch technique

NASA Astrophysics Data System (ADS)

Geetha, D.; Pratyank, R.; Kiran, P.

2018-04-01

Silicon being the most important material applied in microelectronic and photovoltaic technology, repeated investigation of the mechanical properties becomes essential. The nanoscale elastic-plastic deformation characteristics of Si (100) film were analyzed using nanoindentation and nanoscratch techniques. The hardness and elastic modulus values of the film obtained from nanoindentation tests were found to be consistent with the reported values. The load-displacement curves showed discontinuities and kinks which confirms the plastic behaviour of Si. The indentation induced plastic deformations were the consequences of the phase transformations. The critical shear stress, tensile strength and plastic zone size, of the Si film when subjected to nanoindentation were determined. The nanoscratch tests were performed to understand the tribological properties of the film. The SPM images of both the nanoindentation and nanoscratch profiles were useful in revealing the plastic character in terms of the piling up of matter in the vicinity of the dents. Conclusions were drawn in quantifying the plastic deformations and phase transformations.

Flexible packaging for microelectronic devices

DOE Office of Scientific and Technical Information (OSTI.GOV)

Anderson, Benjamin John; Nielson, Gregory N.; Cruz-Campa, Jose Luis

An apparatus, method, and system, the apparatus and system including a flexible microsystems enabled microelectronic device package including a microelectronic device positioned on a substrate; an encapsulation layer encapsulating the microelectronic device and the substrate; a protective layer positioned around the encapsulating layer; and a reinforcing layer coupled to the protective layer, wherein the substrate, encapsulation layer, protective layer and reinforcing layer form a flexible and optically transparent package around the microelectronic device. The method including encapsulating a microelectronic device positioned on a substrate within an encapsulation layer; sealing the encapsulated microelectronic device within a protective layer; and coupling themore » protective layer to a reinforcing layer, wherein the substrate, encapsulation layer, protective layer and reinforcing layer form a flexible and optically transparent package around the microelectronic device.« less

Integrating photonics with silicon nanoelectronics for the next generation of systems on a chip.

PubMed

Atabaki, Amir H; Moazeni, Sajjad; Pavanello, Fabio; Gevorgyan, Hayk; Notaros, Jelena; Alloatti, Luca; Wade, Mark T; Sun, Chen; Kruger, Seth A; Meng, Huaiyu; Al Qubaisi, Kenaish; Wang, Imbert; Zhang, Bohan; Khilo, Anatol; Baiocco, Christopher V; Popović, Miloš A; Stojanović, Vladimir M; Ram, Rajeev J

2018-04-01

Electronic and photonic technologies have transformed our lives-from computing and mobile devices, to information technology and the internet. Our future demands in these fields require innovation in each technology separately, but also depend on our ability to harness their complementary physics through integrated solutions 1,2 . This goal is hindered by the fact that most silicon nanotechnologies-which enable our processors, computer memory, communications chips and image sensors-rely on bulk silicon substrates, a cost-effective solution with an abundant supply chain, but with substantial limitations for the integration of photonic functions. Here we introduce photonics into bulk silicon complementary metal-oxide-semiconductor (CMOS) chips using a layer of polycrystalline silicon deposited on silicon oxide (glass) islands fabricated alongside transistors. We use this single deposited layer to realize optical waveguides and resonators, high-speed optical modulators and sensitive avalanche photodetectors. We integrated this photonic platform with a 65-nanometre-transistor bulk CMOS process technology inside a 300-millimetre-diameter-wafer microelectronics foundry. We then implemented integrated high-speed optical transceivers in this platform that operate at ten gigabits per second, composed of millions of transistors, and arrayed on a single optical bus for wavelength division multiplexing, to address the demand for high-bandwidth optical interconnects in data centres and high-performance computing 3,4 . By decoupling the formation of photonic devices from that of transistors, this integration approach can achieve many of the goals of multi-chip solutions 5 , but with the performance, complexity and scalability of 'systems on a chip' 1,6-8 . As transistors smaller than ten nanometres across become commercially available 9 , and as new nanotechnologies emerge 10,11 , this approach could provide a way to integrate photonics with state-of-the-art nanoelectronics.

A top-down approach for fabricating three-dimensional closed hollow nanostructures with permeable thin metal walls.

PubMed

Barrios, Carlos Angulo; Canalejas-Tejero, Víctor

2017-01-01

We report on a top-down method for the controlled fabrication of three-dimensional (3D), closed, thin-shelled, hollow nanostructures (nanocages) on planar supports. The presented approach is based on conventional microelectronic fabrication processes and exploits the permeability of thin metal films to hollow-out polymer-filled metal nanocages through an oxygen-plasma process. The technique is used for fabricating arrays of cylindrical nanocages made of thin Al shells on silicon substrates. This hollow metal configuration features optical resonance as revealed by spectral reflectance measurements and numerical simulations. The fabricated nanocages were demonstrated as a refractometric sensor with a measured bulk sensitivity of 327 nm/refractive index unit (RIU). The pattern design flexibility and controllability offered by top-down nanofabrication techniques opens the door to the possibility of massive integration of these hollow 3D nano-objects on a chip for applications such as nanocontainers, nanoreactors, nanofluidics, nano-biosensors and photonic devices.

NASA Tech Briefs, November 2013

NASA Technical Reports Server (NTRS)

2013-01-01

Topics include: Cryogenic Liquid Sample Acquisition System for Remote Space Applications; 5 Spatial Statistical Data Fusion (SSDF); GPS Estimates of Integrated Precipitable Water Aid Weather Forecasters; Integrating a Microwave Radiometer into Radar Hardware for Simultaneous Data Collection Between the Instruments; Rapid Detection of Herpes Viruses for Clinical Applications; High-Speed Data Recorder for Space, Geodesy, and Other High-Speed Recording Applications; Datacasting V3.0; An All-Solid-State, Room-Temperature, Heterodyne Receiver for Atmospheric Spectroscopy at 1.2 THz; Stacked Transformer for Driver Gain and Receive Signal Splitting; Wireless Integrated Microelectronic Vacuum Sensor System; Fabrication Method for LOBSTER-Eye Optics in <110> Silicon; Compact Focal Plane Assembly for Planetary Science; Fabrication Methods for Adaptive Deformable Mirrors; Visiting Vehicle Ground Trajectory Tool; Workflow-Based Software Development Environment; Mobile Thread Task Manager; A Kinematic Calibration Process for Flight Robotic Arms; Magnetostrictive Alternator; Bulk Metallic Glasses and Composites for Optical and Compliant Mechanisms; Detection of Only Viable Bacterial Spores Using a Live/Dead Indicator in Mixed Populations; and Intravenous Fluid Generation System.

New test structures and techniques for measurement of mechanical properties of MEMS materials

NASA Astrophysics Data System (ADS)

Sharpe, William N., Jr.; Yuan, Bin; Vaidyanathan, Ranji; Edwards, Richard L.

1996-09-01

This paper presents techniques and procedures for addressing the three major problems of mechanical testing of the thin films used in surface micromachined microelectromechanical systems--specimen handling, friction, and strain measurement. The polysilicon tensile specimens are fabricated with two supporting side strips on silicon wafers at the Microelectronic Center of North Carolina. The tensile specimen is released by etching away the wafer, and the two support strips are cut after the specimen is glued in the test machine. Friction is reduced by a linear air bearing in the load train, and strain is measured with a noncontacting technique based on laser interferometry between two gold lines on the tensile specimen. The Young's modulus of polysilicon is 170 +/- 7 GPa and the strength is 1.21 +/- 0.16 GPa from a series of 29 tests. preliminary measurements have been made of Poisson's ratio and the fatigue behavior, and an attempt is underway to measure the fracture toughness.

Direct Growth of Graphene Film on Germanium Substrate

PubMed Central

Wang, Gang; Zhang, Miao; Zhu, Yun; Ding, Guqiao; Jiang, Da; Guo, Qinglei; Liu, Su; Xie, Xiaoming; Chu, Paul K.; Di, Zengfeng; Wang, Xi

2013-01-01

Graphene has been predicted to play a role in post-silicon electronics due to the extraordinary carrier mobility. Chemical vapor deposition of graphene on transition metals has been considered as a major step towards commercial realization of graphene. However, fabrication based on transition metals involves an inevitable transfer step which can be as complicated as the deposition of graphene itself. By ambient-pressure chemical vapor deposition, we demonstrate large-scale and uniform depositon of high-quality graphene directly on a Ge substrate which is wafer scale and has been considered to replace conventional Si for the next generation of high-performance metal-oxide-semiconductor field-effect transistors (MOSFETs). The immiscible Ge-C system under equilibrium conditions dictates graphene depositon on Ge via a self-limiting and surface-mediated process rather than a precipitation process as observed from other metals with high carbon solubility. Our technique is compatible with modern microelectronics technology thus allowing integration with high-volume production of complementary metal-oxide-semiconductors (CMOS). PMID:23955352

Silicon as a model ion trap: Time domain measurements of donor Rydberg states

PubMed Central

Vinh, N. Q.; Greenland, P. T.; Litvinenko, K.; Redlich, B.; van der Meer, A. F. G.; Lynch, S. A.; Warner, M.; Stoneham, A. M.; Aeppli, G.; Paul, D. J.; Pidgeon, C. R.; Murdin, B. N.

2008-01-01

One of the great successes of quantum physics is the description of the long-lived Rydberg states of atoms and ions. The Bohr model is equally applicable to donor impurity atoms in semiconductor physics, where the conduction band corresponds to the vacuum, and the loosely bound electron orbiting a singly charged core has a hydrogen-like spectrum according to the usual Bohr–Sommerfeld formula, shifted to the far-infrared because of the small effective mass and high dielectric constant. Manipulation of Rydberg states in free atoms and ions by single and multiphoton processes has been tremendously productive since the development of pulsed visible laser spectroscopy. The analogous manipulations have not been conducted for donor impurities in silicon. Here, we use the FELIX pulsed free electron laser to perform time-domain measurements of the Rydberg state dynamics in phosphorus- and arsenic-doped silicon and we have obtained lifetimes consistent with frequency domain linewidths for isotopically purified silicon. This implies that the dominant decoherence mechanism for excited Rydberg states is lifetime broadening, just as for atoms in ion traps. The experiments are important because they represent a step toward coherent control and manipulation of atomic-like quantum levels in the most common semiconductor and complement magnetic resonance experiments in the literature, which show extraordinarily long spin lattice relaxation times—key to many well known schemes for quantum computing qubits—for the same impurities. Our results, taken together with the magnetic resonance data and progress in precise placement of single impurities, suggest that doped silicon, the basis for modern microelectronics, is also a model ion trap.

Silicon carbide as a basis for spaceflight optical systems

NASA Astrophysics Data System (ADS)

Curcio, Michael E.

1994-09-01

New advances in the areas of microelectronics and micro-mechanical devices have created a momentum in the development of lightweight, miniaturized, electro-optical space subsystems. The performance improvements achieved and new observational techniques developed as a result, have provided a basis for a new range of Small Explorer, Discovery-class and other low-cost mission concepts for space exploration. However, the ultimate objective of low-mass, inexpensive space science missions will only be achieved with a companion development in the areas of flight optical systems and sensor instrument benches. Silicon carbide (SiC) is currently emerging as an attractive technology to fill this need. As a material basis for reflective, flight telescopes and optical benches, SiC offers: the lightweight and stiffness characteristics of beryllium; glass-like inherent stability consistent with performance to levels of diffraction-limited visible resolution; superior thermal properties down to cryogenic temperatures; and an existing, commercially-based material and processing infrastructure like aluminum. This paper will describe the current status and results of on-going technology developments to utilize these material properties in the creation of lightweight, high- performing, thermally robust, flight optical assemblies. System concepts to be discussed range from an 18 cm aperture, 4-mirror, off-axis system weighing less than 2 kg to a 0.5 m, 15 kg reimager. In addition, results in the development of a thermally-stable, `GOES-like' scan mirror will be presented.

High-speed thin-film transistors on single-crystalline, unstrained- and strained-silicon-based nanomembranes

NASA Astrophysics Data System (ADS)

Yuan, Hao-Chih

This research focuses on developing high-performance single-crystal Si-based nanomembranes and high-frequency thin-film transistors (TFTs) using these nanomembranes on flexible plastic substrates. Unstrained Si or SiGe nanomembranes with thickness of several tens to a couple of hundred nanometers are derived from silicon-on-insulator (SOI) or silicon-germanium-on-insulator (SGOI) and are subsequently transferred and integrated with flexible plastic host substrates via a one-step dry printing technique. Biaxial tensile-strained Si membranes that utilize elastic strain-sharing between Si and additionally grown SiGe thin films are also successfully integrated with plastic host substrates and exhibit predicted strain status and negligible density of dislocations. Biaxial tensile strain enhances electron mobility and lowers Schottky contact resistance. As a result, flexible TFTs built on the strained Si-membranes demonstrate much higher electron effective mobility and higher drive current than the unstrained counterpart. The dependence of drive current and transconductance on uniaxial tensile strain introducing by mechanical bending is also discussed. A novel combined "hot-and-cold" TFT fabrication process is developed specifically for realizing a wide spectrum of micro-electronics that can exhibit RF performance and can be integrated on low-temperature plastic substrate. The "hot" process that consists of ion implant and high-temperature annealing for desired doping type, profile, and concentration is realized on the bulk SOI/SGOI substrates followed by the "cold" process that includes room-temperature silicon-monoxide (SiO) deposition as gate dielectric layer to ensure the process compatibility with low-temperature, low-cost plastics. With these developments flexible Si-membrane n-type RF TFTs for analog applications and complementary TFTs for digital applications are demonstrated for the first time. RF TFTs with 1.5-mum channel length have demonstrated record-high f T and fmax values of 2.04 and 7.8 GHz, respectively. A small-signal equivalent circuit model study on the RF TFTs reveals the physics of how device layout affects fT and f max, which paves the way for further performance optimization and realization of integrated circuit on flexible substrate in the future.

Silicon photonics for high-performance interconnection networks

NASA Astrophysics Data System (ADS)

Biberman, Aleksandr

2011-12-01

We assert in the course of this work that silicon photonics has the potential to be a key disruptive technology in computing and communication industries. The enduring pursuit of performance gains in computing, combined with stringent power constraints, has fostered the ever-growing computational parallelism associated with chip multiprocessors, memory systems, high-performance computing systems, and data centers. Sustaining these parallelism growths introduces unique challenges for on- and off-chip communications, shifting the focus toward novel and fundamentally different communication approaches. This work showcases that chip-scale photonic interconnection networks, enabled by high-performance silicon photonic devices, enable unprecedented bandwidth scalability with reduced power consumption. We demonstrate that the silicon photonic platforms have already produced all the high-performance photonic devices required to realize these types of networks. Through extensive empirical characterization in much of this work, we demonstrate such feasibility of waveguides, modulators, switches, and photodetectors. We also demonstrate systems that simultaneously combine many functionalities to achieve more complex building blocks. Furthermore, we leverage the unique properties of available silicon photonic materials to create novel silicon photonic devices, subsystems, network topologies, and architectures to enable unprecedented performance of these photonic interconnection networks and computing systems. We show that the advantages of photonic interconnection networks extend far beyond the chip, offering advanced communication environments for memory systems, high-performance computing systems, and data centers. Furthermore, we explore the immense potential of all-optical functionalities implemented using parametric processing in the silicon platform, demonstrating unique methods that have the ability to revolutionize computation and communication. Silicon photonics enables new sets of opportunities that we can leverage for performance gains, as well as new sets of challenges that we must solve. Leveraging its inherent compatibility with standard fabrication techniques of the semiconductor industry, combined with its capability of dense integration with advanced microelectronics, silicon photonics also offers a clear path toward commercialization through low-cost mass-volume production. Combining empirical validations of feasibility, demonstrations of massive performance gains in large-scale systems, and the potential for commercial penetration of silicon photonics, the impact of this work will become evident in the many decades that follow.

Apparatus for assembly of microelectronic devices

DOE Office of Scientific and Technical Information (OSTI.GOV)

Okandan, Murat; Nielson, Gregory N.; Cruz-Campa, Jose Luis

An apparatus including a carrier substrate configured to move a microelectronic device. The apparatus further includes a rotatable body configured to receive the microelectronic device. Additionally, the apparatus includes a second substrate configured to receive the microelectronic device from the rotatable body.

A high density two-dimensional electron gas in an oxide heterostructure on Si (001)

NASA Astrophysics Data System (ADS)

Jin, E. N.; Kornblum, L.; Kumah, D. P.; Zou, K.; Broadbridge, C. C.; Ngai, J. H.; Ahn, C. H.; Walker, F. J.

2014-11-01

We present the growth and characterization of layered heterostructures comprised of LaTiO3 and SrTiO3 epitaxially grown on Si (001). Magnetotransport measurements show that the sheet carrier densities of the heterostructures scale with the number of LaTiO3/SrTiO3 interfaces, consistent with the presence of an interfacial 2-dimensional electron gas (2DEG) at each interface. Sheet carrier densities of 8.9 × 1014 cm-2 per interface are observed. Integration of such high density oxide 2DEGs on silicon provides a bridge between the exceptional properties and functionalities of oxide 2DEGs and microelectronic technologies.

Preface to the special issue of Solid State Electronics EUROSOI/ULIS 2017

NASA Astrophysics Data System (ADS)

Nassiopoulou, Androula G.

2018-05-01

This special issue is devoted to selected papers presented at the EuroSOI-ULIS2017 international conference, held in Athens on 3-5 April 2017. EuroSOI-ULIS2017 Conference was mainly devoted to Si devices, which constitute the basic building blocks of any microelectronic circuit. It included papers on advanced Si technologies, novel nanoscale devices, advanced electronic materials and device architectures, mechanisms involved, test structures, substrate materials and technologies, modeling/simulation and characterization. Both CMOS and beyond CMOS devices were presented, covering the More Moore domain, as well as new functionalities in silicon-compatible nanostructures and innovative devices, representing the More than Moore domain (on-chip sensors, biosensors, energy harvesting devices, RF passives, etc.).

Contamination control in hybrid microelectronic modules. Part 3: Specifications for coating material and process controls

NASA Technical Reports Server (NTRS)

Himmel, R. P.

1975-01-01

Resin systems for coating hybrids prior to hermetic sealing are described. The resin systems are a flexible silicone junction resin system and a flexible cycloaliphatic epoxy resin system. The coatings are intended for application to the hybrid after all the chips have been assembled and wire bonded, but prior to hermetic sealing of the package. The purpose of the coating is to control particulate contamination by immobilizing particles and by passivating the hybrid. Recommended process controls for the purpose of minimizing contamination in hybrid microcircuit packages are given. Emphasis is placed on those critical hybrid processing steps in which contamination is most likely to occur.

From Microelectronics to Nanoelectronics

NASA Astrophysics Data System (ADS)

Hoefflinger, Bernd

We highlight key events in over 100 years of electronic amplifiers and their incorporation in computers and communication in order to appreciate the electron as man's most powerful token of information. We recognize that it has taken about 25 years or almost a generation for inventions to make it into new products, and that, within these periods, it still took major campaigns, like the Sputnik effect or what we shall call 10× programs, to achieve major technology steps. From Lilienfeld's invention 1926 of the solid-state field-effect triode to its realization 1959 in Kahng's MOS field-effect transistor, it took 33 years, and this pivotal year also saw the first planar integrated silicon circuit as patented by Noyce. This birth of the integrated microchip launched the unparalleled exponential growth of microelectronics with many great milestones. Among these, we point out the 3D integration of CMOS transistors by Gibbons in 1979 and the related Japanese program on Future Electron Devices (FED). The 3D domain has finally arrived as a broad development since 2005. Consecutively, we mark the neural networks on-chip of 1989 by Mead and others, now, 20 years later, a major project by DARPA. We highlight cooperatives like SRC and SEMATECH, their impact on progress and more recent nanoelectronic milestones until 2010.

First-principles investigations of proton generation in α-quartz

NASA Astrophysics Data System (ADS)

Yue, Yunliang; Song, Yu; Zuo, Xu

2018-03-01

Proton plays a key role in the interface-trap formation that is one of the primary reliability concerns, thus learning how it behaves is key to understand the radiation response of microelectronic devices. The first-principles calculations have been applied to explore the defects and their reactions associated with the proton release in α-quartz, the well-known crystalline isomer of amorphous silica. When a high concentration of molecular hydrogen (H2) is present, the proton generation can be enhanced by cracking the H2 molecules at the positively charged oxygen vacancies in dimer configuration. If the concentration of molecular hydrogen is low, the proton generation mainly depends on the proton dissociation of the doubly-hydrogenated defects. In particular, a fully passivated {E}2^{\\prime } center can dissociate to release a proton barrierlessly by structure relaxation once trapping a hole. This research provides a microscopic insight into the proton release in silicon dioxide, the critical step associated with the interface-trap formation under radiation in microelectronic devices. Project supported by the Science Challenge Project, China (Grant No. TZ2016003-1-105), CAEP Microsystem and THz Science and Technology Foundation, China (Grant No. CAEPMT201501), the National Natural Science Foundation China (Grant No. NSFC 11404300), and the National Basic Research Program of China (Grant No. 2011CB606405).

Design Considerations in Capacitively Coupled Plasmas

NASA Astrophysics Data System (ADS)

Song, Sang-Heon; Ventzek, Peter; Ranjan, Alok

2015-11-01

Microelectronics industry has driven transistor feature size scaling from 10-6 m to 10-9 m during the past 50 years, which is often referred to as Moore's law. It cannot be overstated that today's information technology would not have been so successful without plasma material processing. One of the major plasma sources for the microelectronics fabrication is capacitively coupled plasmas (CCPs). The CCP reactor has been intensively studied and developed for the deposition and etching of different films on the silicon wafer. As the feature size gets to around 10 nm, the requirement for the process uniformity is less than 1-2 nm across the wafer (300 mm). In order to achieve the desired uniformity, the hardware design should be as precise as possible before the fine tuning of process condition is applied to make it even better. In doing this procedure, the computer simulation can save a significant amount of resources such as time and money which are critical in the semiconductor business. In this presentation, we compare plasma properties using a 2-dimensional plasma hydrodynamics model for different kinds of design factors that can affect the plasma uniformity. The parameters studied in this presentation include chamber accessing port, pumping port, focus ring around wafer substrate, and the geometry of electrodes of CCP.

Scalable Sub-micron Patterning of Organic Materials Toward High Density Soft Electronics

PubMed Central

Kim, Jaekyun; Kim, Myung-Gil; Kim, Jaehyun; Jo, Sangho; Kang, Jingu; Jo, Jeong-Wan; Lee, Woobin; Hwang, Chahwan; Moon, Juhyuk; Yang, Lin; Kim, Yun-Hi; Noh, Yong-Young; Yun Jaung, Jae; Kim, Yong-Hoon; Kyu Park, Sung

2015-01-01

The success of silicon based high density integrated circuits ignited explosive expansion of microelectronics. Although the inorganic semiconductors have shown superior carrier mobilities for conventional high speed switching devices, the emergence of unconventional applications, such as flexible electronics, highly sensitive photosensors, large area sensor array, and tailored optoelectronics, brought intensive research on next generation electronic materials. The rationally designed multifunctional soft electronic materials, organic and carbon-based semiconductors, are demonstrated with low-cost solution process, exceptional mechanical stability, and on-demand optoelectronic properties. Unfortunately, the industrial implementation of the soft electronic materials has been hindered due to lack of scalable fine-patterning methods. In this report, we demonstrated facile general route for high throughput sub-micron patterning of soft materials, using spatially selective deep-ultraviolet irradiation. For organic and carbon-based materials, the highly energetic photons (e.g. deep-ultraviolet rays) enable direct photo-conversion from conducting/semiconducting to insulating state through molecular dissociation and disordering with spatial resolution down to a sub-μm-scale. The successful demonstration of organic semiconductor circuitry promise our result proliferate industrial adoption of soft materials for next generation electronics. PMID:26411932

Scalable sub-micron patterning of organic materials toward high density soft electronics

DOE PAGES

Kim, Jaekyun; Kim, Myung -Gil; Kim, Jaehyun; ...

2015-09-28

The success of silicon based high density integrated circuits ignited explosive expansion of microelectronics. Although the inorganic semiconductors have shown superior carrier mobilities for conventional high speed switching devices, the emergence of unconventional applications, such as flexible electronics, highly sensitive photosensors, large area sensor array, and tailored optoelectronics, brought intensive research on next generation electronic materials. The rationally designed multifunctional soft electronic materials, organic and carbon-based semiconductors, are demonstrated with low-cost solution process, exceptional mechanical stability, and on-demand optoelectronic properties. Unfortunately, the industrial implementation of the soft electronic materials has been hindered due to lack of scalable fine-patterning methods. Inmore » this report, we demonstrated facile general route for high throughput sub-micron patterning of soft materials, using spatially selective deep-ultraviolet irradiation. For organic and carbon-based materials, the highly energetic photons (e.g. deep-ultraviolet rays) enable direct photo-conversion from conducting/semiconducting to insulating state through molecular dissociation and disordering with spatial resolution down to a sub-μm-scale. As a result, the successful demonstration of organic semiconductor circuitry promise our result proliferate industrial adoption of soft materials for next generation electronics.« less

Limits in point to point resolution of MOS based pixels detector arrays

NASA Astrophysics Data System (ADS)

Fourches, N.; Desforge, D.; Kebbiri, M.; Kumar, V.; Serruys, Y.; Gutierrez, G.; Leprêtre, F.; Jomard, F.

2018-01-01

In high energy physics point-to-point resolution is a key prerequisite for particle detector pixel arrays. Current and future experiments require the development of inner-detectors able to resolve the tracks of particles down to the micron range. Present-day technologies, although not fully implemented in actual detectors, can reach a 5-μm limit, this limit being based on statistical measurements, with a pixel-pitch in the 10 μm range. This paper is devoted to the evaluation of the building blocks for use in pixel arrays enabling accurate tracking of charged particles. Basing us on simulations we will make here a quantitative evaluation of the physical and technological limits in pixel size. Attempts to design small pixels based on SOI technology will be briefly recalled here. A design based on CMOS compatible technologies that allow a reduction of the pixel size below the micrometer is introduced here. Its physical principle relies on a buried carrier-localizing collecting gate. The fabrication process needed by this pixel design can be based on existing process steps used in silicon microelectronics. The pixel characteristics will be discussed as well as the design of pixel arrays. The existing bottlenecks and how to overcome them will be discussed in the light of recent ion implantation and material characterization experiments.

Dopant mapping in thin FIB prepared silicon samples by Off-Axis Electron Holography.

PubMed

Pantzer, Adi; Vakahy, Atsmon; Eliyahou, Zohar; Levi, George; Horvitz, Dror; Kohn, Amit

2014-03-01

Modern semiconductor devices function due to accurate dopant distribution. Off-Axis Electron Holography (OAEH) in the transmission electron microscope (TEM) can map quantitatively the electrostatic potential in semiconductors with high spatial resolution. For the microelectronics industry, ongoing reduction of device dimensions, 3D device geometry, and failure analysis of specific devices require preparation of thin TEM samples, under 70 nm thick, by focused ion beam (FIB). Such thicknesses, which are considerably thinner than the values reported to date in the literature, are challenging due to FIB induced damage and surface depletion effects. Here, we report on preparation of TEM samples of silicon PN junctions in the FIB completed by low-energy (5 keV) ion milling, which reduced amorphization of the silicon to 10nm thick. Additional perpendicular FIB sectioning enabled a direct measurement of the TEM sample thickness in order to determine accurately the crystalline thickness of the sample. Consequently, we find that the low-energy milling also resulted in a negligible thickness of electrically inactive regions, approximately 4nm thick. The influence of TEM sample thickness, FIB induced damage and doping concentrations on the accuracy of the OAEH measurements were examined by comparison to secondary ion mass spectrometry measurements as well as to 1D and 3D simulations of the electrostatic potentials. We conclude that for TEM samples down to 100 nm thick, OAEH measurements of Si-based PN junctions, for the doping levels examined here, resulted in quantitative mapping of potential variations, within ~0.1 V. For thinner TEM samples, down to 20 nm thick, mapping of potential variations is qualitative, due to a reduced accuracy of ~0.3 V. This article is dedicated to the memory of Zohar Eliyahou. Copyright © 2014 Elsevier B.V. All rights reserved.

Surface Passivation of Silicon Using HfO2 Thin Films Deposited by Remote Plasma Atomic Layer Deposition System.

PubMed

Zhang, Xiao-Ying; Hsu, Chia-Hsun; Lien, Shui-Yang; Chen, Song-Yan; Huang, Wei; Yang, Chih-Hsiang; Kung, Chung-Yuan; Zhu, Wen-Zhang; Xiong, Fei-Bing; Meng, Xian-Guo

2017-12-01

Hafnium oxide (HfO 2 ) thin films have attracted much attention owing to their usefulness in equivalent oxide thickness scaling in microelectronics, which arises from their high dielectric constant and thermodynamic stability with silicon. However, the surface passivation properties of such films, particularly on crystalline silicon (c-Si), have rarely been reported upon. In this study, the HfO 2 thin films were deposited on c-Si substrates with and without oxygen plasma pretreatments, using a remote plasma atomic layer deposition system. Post-annealing was performed using a rapid thermal processing system at different temperatures in N 2 ambient for 10 min. The effects of oxygen plasma pretreatment and post-annealing on the properties of the HfO 2 thin films were investigated. They indicate that the in situ remote plasma pretreatment of Si substrate can result in the formation of better SiO 2 , resulting in a better chemical passivation. The deposited HfO 2 thin films with oxygen plasma pretreatment and post-annealing at 500 °C for 10 min were effective in improving the lifetime of c-Si (original lifetime of 1 μs) to up to 67 μs.

New 3D structuring process for non-integrated circuit related technologies (Conference Presentation)

NASA Astrophysics Data System (ADS)

Nouri, Lamia; Possémé, Nicolas; Landis, Stéfan; Milesi, Frédéric; Gaillard, Frédéric-Xavier

2017-04-01

Fabrication processes that microelectronic developed for Integrated circuit (IC) technologies for decades, do not meet the new emerging structuration's requirements, in particular non-IC related technologies one, such as MEMS/NEMS, Micro-Fluidics, photovoltaics, lenses. Actually complex 3D structuration requires complex lithography patterning approaches such as gray-scale electron beam lithography, laser ablation, focused ion beam lithography, two photon polymerization. It is now challenging to find cheaper and easiest technique to achieve 3D structures. In this work, we propose a straightforward process to realize 3D structuration, intended for silicon based materials (Si, SiN, SiOCH). This structuration technique is based on nano-imprint lithography (NIL), ion implantation and selective wet etching. In a first step a pattern is performed by lithography on a substrate, then ion implantation is realized through a resist mask in order to create localized modifications in the material, thus the pattern is transferred into the subjacent layer. Finally, after the resist stripping, a selective wet etching is carried out to remove selectively the modified material regarding the non-modified one. In this paper, we will first present results achieved with simple 2D line array pattern processed either on Silicon or SiOCH samples. This step have been carried out to demonstrate the feasibility of this new structuration process. SEM pictures reveals that "infinite" selectivity between the implanted areas versus the non-implanted one could be achieved. We will show that a key combination between the type of implanted ion species and wet etching chemistries is required to obtain such results. The mechanisms understanding involved during both implantation and wet etching processes will also be presented through fine characterizations with Photoluminescence, Raman and Secondary Ion Mass Spectrometry (SIMS) for silicon samples, and ellipso-porosimetry and Fourier Transform InfraRed spectroscopy (FTIR) for SiOCH samples. Finally the benefit of this new patterning approach will be presented on 3D patterns structures.

Diffraction-analysis-based characterization of very fine gratings

NASA Astrophysics Data System (ADS)

Bischoff, Joerg; Truckenbrodt, Horst; Bauer, Joachim J.

1997-09-01

Fine gratings with spatial periods below one micron, either ruled mechanically or patterned holographically, play a key role as encoders in high precision translational or rotational coordinate or measuring machines. Besides, the fast in-line characterization of submicron patterns is a stringent demand in recent microelectronic technology. Thus, a rapid, destruction free and highly accurate measuring technique is required to ensure the quality during manufacturing and for final testing. We propose an optical method which was already successfully introduced in semiconductor industry. Here, the inverse scatter problem inherent in this diffraction based approach is overcome by sophisticated data analysis such as multivariate regression or neural networks. Shortly sketched, the procedure is as follows: certain diffraction efficiencies are measured with an optical angle resolved scatterometer and assigned to a number of profile parameters via data analysis (prediction). Before, the specific measuring model has to be calibrated. If the wavelength-to-period rate is well below unity, it is quite easy to gather enough diffraction orders. However, for gratings with spatial periods being smaller than the probing wavelength, merely the specular reflex will propagate for perpendicular incidence (zero order grating). Consequently, it is virtually impossible to perform a regression analysis. A proper mean to tackle this bottleneck is to record the zero-order reflex as a function of the incident angle. In this paper, the measurement of submicron gratings is discussed with the examples of 0.8, 1.0 and 1.4 micron period resist gratings on silicon, etched silicon oxide on silicon (same periods) and a 512 nm pitch chromium grating on quartz. Using a He-Ne laser with 633 nm wavelength and measuring the direct reflex in both linear polarizations, it is shown that even submicron patterning processes can be monitored and the resulting profiles with linewidths below a half micron can be characterized reliably with 2(theta) - scatterometry.

Two different ways for waveguides and optoelectronics components on top of C-MOS

NASA Astrophysics Data System (ADS)

Fedeli, J. M.; Jeannot, S.; Kostrzewa, M.; Di Cioccio, L.; Jousseaume, V.; Orobtchouk, R.; Maury, P.; Zussy, M.

2006-02-01

While fabrication of photonic components at the wafer level is a long standing goal of integrated optics, new applications such as optical interconnects are introducing new challenges for waveguides and optoelectronic component fabrication. Indeed, global interconnects are expected to face severe limitations in the near future. To face this problem, optical links on top of a CMOS circuits could be an alternative. The critical points to perform an optical link on a chip are firstly the realization of compact passive optical distribution and secondly the report of optoelectronic components for the sources and detectors. This paper presents two different approaches for the integration of both waveguides and optoelectronic components. In a first "total bonding" approach, waveguides have been elaborated using classical "Silicon On Insulators" technology and then reported using molecular bonding on top off Si wafers. The S0I substrate was then chemically etched, after what InP dies were moleculary bonded on top of the waveguides. With this approach, optical components with low loses and a good equilibrium are demonsrated. Using molecular bonding, InP dies were reported with no degradation of the optoelectronic properties of the films. In a second approach, using PECVD silicon nitride or amorphous silicon coupled to PECVD silicon oxide, basic optical components are demonstrated. This low temperature technology is compatible with a microelectronic Back End process, allowing an integration of the waveguides directly on top of CMOS circuits. InP dies can then be bonded on top of the waveguides.

Robust integration schemes for junction-based modulators in a 200mm CMOS compatible silicon photonic platform (Conference Presentation)

NASA Astrophysics Data System (ADS)

Szelag, Bertrand; Abraham, Alexis; Brision, Stéphane; Gindre, Paul; Blampey, Benjamin; Myko, André; Olivier, Segolene; Kopp, Christophe

2017-05-01

Silicon photonic is becoming a reality for next generation communication system addressing the increasing needs of HPC (High Performance Computing) systems and datacenters. CMOS compatible photonic platforms are developed in many foundries integrating passive and active devices. The use of existing and qualified microelectronics process guarantees cost efficient and mature photonic technologies. Meanwhile, photonic devices have their own fabrication constraints, not similar to those of cmos devices, which can affect their performances. In this paper, we are addressing the integration of PN junction Mach Zehnder modulator in a 200mm CMOS compatible photonic platform. Implantation based device characteristics are impacted by many process variations among which screening layer thickness, dopant diffusion, implantation mask overlay. CMOS devices are generally quite robust with respect to these processes thanks to dedicated design rules. For photonic devices, the situation is different since, most of the time, doped areas must be carefully located within waveguides and CMOS solutions like self-alignment to the gate cannot be applied. In this work, we present different robust integration solutions for junction-based modulators. A simulation setup has been built in order to optimize of the process conditions. It consist in a Mathlab interface coupling process and device electro-optic simulators in order to run many iterations. Illustrations of modulator characteristic variations with process parameters are done using this simulation setup. Parameters under study are, for instance, X and Y direction lithography shifts, screening oxide and slab thicknesses. A robust process and design approach leading to a pn junction Mach Zehnder modulator insensitive to lithography misalignment is then proposed. Simulation results are compared with experimental datas. Indeed, various modulators have been fabricated with different process conditions and integration schemes. Extensive electro-optic characterization of these components will be presented.

Bioactivity of plasma implanted biomaterials

NASA Astrophysics Data System (ADS)

Chu, Paul K.

2006-01-01

Plasma immersion ion implantation and deposition (PIII&D) is an effective technique to enhance the surface bioactivity of materials. In this paper, recent progress made in our laboratory on plasma surface modification of biomedical materials is described. NiTi alloys have unique super-elastic and shape memory properties and are suitable for orthopedic implants but the leaching of toxic Ni may pose health hazards in humans. We have recently investigated the use of acetylene, oxygen and nitrogen PIII&D to prevent out-diffusion of nickel and good results have been obtained. Silicon is the most important material in the microelectronics industry but its surface biocompatibility has not been investigated in details. We have recently performed hydrogen PIII into silicon to improve the surface bioactivity and observed biomimetic growth of apatite on the surface in simulated body fluids. Diamond-like carbon (DLC) is widely used in the industry due to its excellent mechanical properties and chemical inertness and by incorporation of elements such as nitrogen and phosphorus, the surface blood compatibility can be improved. The properties as well as in vitro biological test results are discussed in this article.

Materials and processing science: Limits for microelectronics

NASA Astrophysics Data System (ADS)

Rosenberg, R.

1988-09-01

The theme of this talk will be to illustrate examples of technologies that will drive materials and processing sciences to the limit and to describe some of the research being pursued to understand materials interactions which are pervasive to projected structure fabrication. It is to be expected that the future will see a progression to nanostructures where scaling laws will be tested and quantum transport will become more in evidence, to low temperature operation for tighter control and improved performance, to complex vertical profiles where 3D stacking and superlattices will produce denser packing and device flexibility, to faster communication links with optoelectronics, and to compatible packaging technologies. New low temperature processing techniques, such as epitaxy of silicon, PECVD of dielectrics, low temperature high pressure oxidation, silicon-germanium heterostructures, etc., must be combined with shallow metallurgies, new lithographic technologies, maskless patterning, rapid thermal processing (RTP) to produce needed profile control, reduce process incompatibilities and develop new device geometries. Materials interactions are of special consequence for chip substrates and illustrations of work in metal-ceramic and metal-polymer adhesion will be offered.

Visible emission from bismuth-doped yttrium oxide thin films for lighting and display applications.

PubMed

Scarangella, Adriana; Fabbri, Filippo; Reitano, Riccardo; Rossi, Francesca; Priolo, Francesco; Miritello, Maria

2017-12-11

Due to the great development of light sources for several applications from displays to lighting, great efforts are devoted to find stable and efficient visible emitting materials. Moreover, the requirement of Si compatibility could enlarge the range of applications inside microelectronic chips. In this scenario, we have studied the emission properties of bismuth doped yttrium oxide thin films grown on crystalline silicon. Under optical pumping at room temperature a stable and strong visible luminescence has been observed. In particular, by the involvement of Bi ions in the two available lattice sites, the emission can be tuned from violet to green by changing the excitation wavelength. Moreover, under electron beam at low accelerating voltages (3 keV) a blue emission with high efficiency and excellent stability has been recorded. The color is generated by the involvement of Bi ions in both the lattice sites. These peculiarities make this material interesting as a luminescent medium for applications in light emitting devices and field emission displays by opening new perspectives for the realization of silicon-technology compatible light sources operating at room temperature.

Preliminary Flight Results of the Microelectronics and Photonics Test Bed: NASA DR1773 Fiber Optic Data Bus Experiment

NASA Technical Reports Server (NTRS)

Jackson, George L.; LaBel, Kenneth A.; Marshall, Cheryl; Barth, Janet; Seidleck, Christina; Marshall, Paul

1998-01-01

NASA Goddard Spare Flight Center's (GSFC) Dual Rate 1773 (DR1773) Experiment on the Microelectronic and Photonic Test Bed (MPTB) has provided valuable information on the performance of the AS 1773 fiber optic data bus in the space radiation environment. Correlation of preliminary experiment data to ground based radiation test results show the AS 1773 bus is employable in future spacecraft applications requiring radiation tolerant communication links.

Three-dimensional modeling of n+-nu-n+ and p+-pi-p+ semiconducting devices for analog ULSI microelectronics

NASA Astrophysics Data System (ADS)

Gillet, Jean-Numa; Degorce, Jean-Yves; Belisle, Jonathan; Meunier, Michel

2004-03-01

Three-dimensional modeling of n^+-ν -n^+ and p^+-π -p^+ semiconducting devices for analog ULSI microelectronics Jean-Numa Gillet,^a,b Jean-Yves Degorce,^a Jonathan Bélisle^a and Michel Meunier.^a,c ^a École Polytechnique de Montréal, Dept. of Engineering Physics, CP 6079, Succ. Centre-vile, Montréal, Québec H3C 3A7, Canada. ^b Corresponding author. Email: Jean-Numa.Gillet@polymtl.ca ^c Also with LTRIM Technologies, 140-440, boul. A.-Frappier, Laval, Québec H7V 4B4, Canada. We present for the first time three-dimensional (3-D) modeling of n^+-ν -n^+ and p^+-π -p^+ semiconducting resistors, which are fabricated by laser-induced doping in a gateless MOSFET and present significant applications for analog ULSI microelectronics. Our modeling software is made up of three steps. The two first concerns modeling of a new laser-trimming fabrication process. With the molten-silicon temperature distribution obtained from the first, we compute in the second the 3-D dopant distribution, which creates the electrical link through the device gap. In this paper the emphasis is on the third step, which concerns 3-D modeling of the resistor electronic behavior with a new tube multiplexing algorithm (TMA). The device current-voltage (I-V) curve is usually obtained by solving three coupled partial differential equations with a finite-element method. A 3-D device as our resistor cannot be modeled with this classical method owing to its prohibitive computational cost in three dimensions. This problem is however avoided by our TMA, which divides the 3-D device into one-dimensional (1-D) multiplexed tubes. In our TMA 1-D systems of three ordinary differential equations are solved to determine the 3-D device I-V curve, which substantially increases computation speed compared with the classical method. Numerical results show a good agreement with experiments.

Silicon Micromachined Sensor for Broadband Vibration Analysis

NASA Technical Reports Server (NTRS)

Gutierrez, Adolfo; Edmans, Daniel; Cormeau, Chris; Seidler, Gernot; Deangelis, Dave; Maby, Edward

1995-01-01

The development of a family of silicon based integrated vibration sensors capable of sensing mechanical resonances over a broad range of frequencies with minimal signal processing requirements is presented. Two basic general embodiments of the concept were designed and fabricated. The first design was structured around an array of cantilever beams and fabricated using the ARPA sponsored multi-user MEMS processing system (MUMPS) process at the Microelectronics Center of North Carolina (MCNC). As part of the design process for this first sensor, a comprehensive finite elements analysis of the resonant modes and stress distribution was performed using PATRAN. The dependence of strain distribution and resonant frequency response as a function of Young's modulus in the Poly-Si structural material was studied. Analytical models were also studied. In-house experimental characterization using optical interferometry techniques were performed under controlled low pressure conditions. A second design, intended to operate in a non-resonant mode and capable of broadband frequency response, was proposed and developed around the concept of a cantilever beam integrated with a feedback control loop to produce a null mode vibration sensor. A proprietary process was used to integrat a metal-oxide semiconductor (MOS) sensing device, with actuators and a cantilever beam, as part of a compatible process. Both devices, once incorporated as part of multifunction data acquisition and telemetry systems will constitute a useful system for NASA launch vibration monitoring operations. Satellite and other space structures can benefit from the sensor for mechanical condition monitoring functions.

Static time-of-flight secondary ion mass spectrometry analysis of microelectronics related substrates using a polyatomic ion source

NASA Astrophysics Data System (ADS)

Ravanel, X.; Trouiller, C.; Juhel, M.; Wyon, C.; Kwakman, L. F. Tz.; Léonard, D.

2008-12-01

Recent time-of-flight secondary ion mass spectrometry studies using primary ion cluster sources such as Au n+, SF 5+, Bi n+ or C 60+ have shown the great advantages in terms of secondary ion yield enhancement and ion formation efficiency of polyatomic ion sources as compared to monoatomic ion sources like the commonly used Ga +. In this work, the effective gains provided by such a source in the static ToF-SIMS analysis of microelectronics devices were investigated. Firstly, the influence of the number of atoms in the primary cluster ion on secondary ion formation was studied for physically adsorbed di-isononyl phthalate (DNP) (plasticizer) and perfluoropolyether (PFPE). A drastic increase in secondary ion formation efficiency and a much lower detection limit were observed when using a polyatomic primary ion. Moreover, the yield of the higher mass species was much enhanced indicating a lower degree of fragmentation that can be explained by the fact that the primary ion energy is spread out more widely, or that there is a lower energy per incoming ion. Secondly, the influence of the number of Bi atoms in the Bi n primary ion on the information depth was studied using reference thermally grown silicon oxide samples. The information depth provided by a Bi n cluster was shown to be lowered when the number of atoms in the aggregate was increased.

Liquid metal micro heat pipes for space radiator applications

NASA Technical Reports Server (NTRS)

Gerner, F. M.; Henderson, H. T.

1995-01-01

Micromachining is a chemical means of etching three-dimensional structures, typically in single-crystalline silicon. These techniques are leading toward what is coming to be referred to as MEMS (micro electro mechanical systems), where in addition to the ordinary two dimensional (planar) microelectronics, it is possible to build three-dimensional micromotors, electrically-actuated microvalves, hydraulic systems, and much more on the same microchip. These techniques become possible because of differential etching rates of various crystallographic planes and materials used for semiconductor microfabrication. The University of Cincinnati group in collaboration with NASA Lewis formed micro heat pipes in silicon by the above techniques. Work is ongoing at a modest level, but several essential bonding and packaging techniques have been recently developed. Currently, we have constructed and filled water/silicon micro heat pipes. Preliminary thermal tests of arrays of 125 micro heat pipes etched in a 1 inch x 1 inch x 250 micron silicon wafer have been completed. These pipes are instrumented with extremely small P-N junctions to measure their effective conductivity and their maximum operating power. A relatively simple one-dimensional model has been developed in order to predict micro heat pipes' operating characteristics. This information can be used to optimize micro heat pipe design with respect to length, hydraulic diameter, and number of pipes. Work is progressing on the fabrication of liquid-metal micro heat pipes. In order to be compatible with liquid metal (sodium or potassium), the inside of the micro heat pipes will be coated with a refractory metal (such as tungsten, molybdenum, or titanium).

The effect of electrospun nanofibers alignment on the synthesis of one-dimensional silicon carbide nanostructure

NASA Astrophysics Data System (ADS)

Hooshyar, Ali; Kokabi, Mehrdad

2018-01-01

One-dimensional silicon carbide (1D SiC) nanostructure has shown unusual properties such as extremely high strength, good flexibility, fracture toughness, wide band gap ( 3.2eV), large breakdown electric field strength (>2 MV cm-1, 10 times that of silicon), and inverse Hall-Petch effect. Because of these advantages, 1D SiC nanomaterial has gained extensive attention on the wide range of applications in microelectronics, optoelectronics, nanocomposites, and catalyst supports. Many methods have been used for the synthesis of 1D SiC nanostructures such as chemical vapor deposition, carbon nanotube-confined reaction, laser ablation, high-frequency induction heating, and arc discharge. However, these methods have also some shortcomings such as using catalyst, high-cost, low yield, irregular geometry and impurity. In this work, electrospinning was used to prepare aligned PVA/SiO2 composite nanofibers and the effect of fiber alignment on the production efficiency and quality of 1D SiC nanostructure was investigated. For this purpose, aligned electrospun nanofibers, as the desirable precursor, were put in a tube furnace and heated up to 1250°C under a controlled program in an inert atmosphere. Finally, the grown 1D SiC nanostructure product was characterized using SEM, XRD, and FTIR. The results confirmed the successful synthesis of pure crystalline1D β-SiC nanostructure with high yield, more regular, and metal catalyst-free.

Piezo-Phototronic Effect on Selective Electron or Hole Transport through Depletion Region of Vis-NIR Broadband Photodiode.

PubMed

Zou, Haiyang; Li, Xiaogan; Peng, Wenbo; Wu, Wenzhuo; Yu, Ruomeng; Wu, Changsheng; Ding, Wenbo; Hu, Fei; Liu, Ruiyuan; Zi, Yunlong; Wang, Zhong Lin

2017-08-01

Silicon underpins nearly all microelectronics today and will continue to do so for some decades to come. However, for silicon photonics, the indirect band gap of silicon and lack of adjustability severely limit its use in applications such as broadband photodiodes. Here, a high-performance p-Si/n-ZnO broadband photodiode working in a wide wavelength range from visible to near-infrared light with high sensitivity, fast response, and good stability is reported. The absorption of near-infrared wavelength light is significantly enhanced due to the nanostructured/textured top surface. The general performance of the broadband photodiodes can be further improved by the piezo-phototronic effect. The enhancement of responsivity can reach a maximum of 78% to 442 nm illumination, the linearity and saturation limit to 1060 nm light are also significantly increased by applying external strains. The photodiode is illuminated with different wavelength lights to selectively choose the photogenerated charge carriers (either electrons or holes) passing through the depletion region, to investigate the piezo-phototronic effect on electron or hole transport separately for the first time. This is essential for studying the basic principles in order to develop a full understanding about piezotronics and it also enables the development of the better performance of optoelectronics. © 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Photovoltaic energy converter as a chipscale high efficiency power source for implanted active microelectronic devices.

PubMed

Hwang, N-J; Patterson, W R; Song, Y-K; Atay, T; Nurmikko, A V

2004-01-01

We report the development of a microscale photovoltaic energy converter which has been designed and implemented to deliver power to CMOS-based microelectronic chips. The design targets the delivery of voltages on the order of 3V with power levels in excess of 10 mW. The geometry of the prototype device, which has been fabricated and tested, is specifically designed for coupling to an optical fiber, to facilitate remote power delivery in implantable component environment.

Self-transducing silicon nanowire electromechanical systems at room temperature.

PubMed

He, Rongrui; Feng, X L; Roukes, M L; Yang, Peidong

2008-06-01

Electronic readout of the motions of genuinely nanoscale mechanical devices at room temperature imposes an important challenge for the integration and application of nanoelectromechanical systems (NEMS). Here, we report the first experiments on piezoresistively transduced very high frequency Si nanowire (SiNW) resonators with on-chip electronic actuation at room temperature. We have demonstrated that, for very thin (~90 nm down to ~30 nm) SiNWs, their time-varying strain can be exploited for self-transducing the devices' resonant motions at frequencies as high as approximately 100 MHz. The strain of wire elongation, which is only second-order in doubly clamped structures, enables efficient displacement transducer because of the enhanced piezoresistance effect in these SiNWs. This intrinsically integrated transducer is uniquely suited for a class of very thin wires and beams where metallization and multilayer complex patterning on devices become impractical. The 30 nm thin SiNW NEMS offer exceptional mass sensitivities in the subzeptogram range. This demonstration makes it promising to advance toward NEMS sensors based on ultrathin and even molecular-scale SiNWs, and their monolithic integration with microelectronics on the same chip.

Analytical techniques for mechanistic characterization of EUV photoresists

NASA Astrophysics Data System (ADS)

Grzeskowiak, Steven; Narasimhan, Amrit; Murphy, Michael; Ackerman, Christian; Kaminsky, Jake; Brainard, Robert L.; Denbeaux, Greg

2017-03-01

Extreme ultraviolet (EUV, 13.5 nm) lithography is the prospective technology for high volume manufacturing by the microelectronics industry. Significant strides towards achieving adequate EUV source power and availability have been made recently, but a limited rate of improvement in photoresist performance still delays the implementation of EUV. Many fundamental questions remain to be answered about the exposure mechanisms of even the relatively well understood chemically amplified EUV photoresists. Moreover, several groups around the world are developing revolutionary metal-based resists whose EUV exposure mechanisms are even less understood. Here, we describe several evaluation techniques to help elucidate mechanistic details of EUV exposure mechanisms of chemically amplified and metal-based resists. EUV absorption coefficients are determined experimentally by measuring the transmission through a resist coated on a silicon nitride membrane. Photochemistry can be evaluated by monitoring small outgassing reaction products to provide insight into photoacid generator or metal-based resist reactivity. Spectroscopic techniques such as thin-film Fourier transform infrared (FTIR) spectroscopy can measure the chemical state of a photoresist system pre- and post-EUV exposure. Additionally, electrolysis can be used to study the interaction between photoresist components and low energy electrons. Collectively, these techniques improve our current understanding of photomechanisms for several EUV photoresist systems, which is needed to develop new, better performing materials needed for high volume manufacturing.

Smart single-chip gas sensor microsystem

NASA Astrophysics Data System (ADS)

Hagleitner, C.; Hierlemann, A.; Lange, D.; Kummer, A.; Kerness, N.; Brand, O.; Baltes, H.

2001-11-01

Research activity in chemical gas sensing is currently directed towards the search for highly selective (bio)chemical layer materials, and to the design of arrays consisting of different partially selective sensors that permit subsequent pattern recognition and multi-component analysis. Simultaneous use of various transduction platforms has been demonstrated, and the rapid development of integrated-circuit technology has facilitated the fabrication of planar chemical sensors and sensors based on three-dimensional microelectromechanical systems. Complementary metal-oxide silicon processes have previously been used to develop gas sensors based on metal oxides and acoustic-wave-based sensor devices. Here we combine several of these developments to fabricate a smart single-chip chemical microsensor system that incorporates three different transducers (mass-sensitive, capacitive and calorimetric), all of which rely on sensitive polymeric layers to detect airborne volatile organic compounds. Full integration of the microelectronic and micromechanical components on one chip permits control and monitoring of the sensor functions, and enables on-chip signal amplification and conditioning that notably improves the overall sensor performance. The circuitry also includes analog-to-digital converters, and an on-chip interface to transmit the data to off-chip recording units. We expect that our approach will provide a basis for the further development and optimization of gas microsystems.

Carbon nanotubes for thermal interface materials in microelectronic packaging

NASA Astrophysics Data System (ADS)

Lin, Wei

As the integration scale of transistors/devices in a chip/system keeps increasing, effective cooling has become more and more important in microelectronics. To address the thermal dissipation issue, one important solution is to develop thermal interface materials with higher performance. Carbon nanotubes, given their high intrinsic thermal and mechanical properties, and their high thermal and chemical stabilities, have received extensive attention from both academia and industry as a candidate for high-performance thermal interface materials. The thesis is devoted to addressing some challenges related to the potential application of carbon nanotubes as thermal interface materials in microelectronics. These challenges include: 1) controlled synthesis of vertically aligned carbon nanotubes on various bulk substrates via chemical vapor deposition and the fundamental understanding involved; 2) development of a scalable annealing process to improve the intrinsic properties of synthesized carbon nanotubes; 3) development of a state-of-art assembling process to effectively implement high-quality vertically aligned carbon nanotubes into a flip-chip assembly; 4) a reliable thermal measurement of intrinsic thermal transport property of vertically aligned carbon nanotube films; 5) improvement of interfacial thermal transport between carbon nanotubes and other materials. The major achievements are summarized. 1. Based on the fundamental understanding of catalytic chemical vapor deposition processes and the growth mechanism of carbon nanotube, fast synthesis of high-quality vertically aligned carbon nanotubes on various bulk substrates (e.g., copper, quartz, silicon, aluminum oxide, etc.) has been successfully achieved. The synthesis of vertically aligned carbon nanotubes on the bulk copper substrate by the thermal chemical vapor deposition process has set a world record. In order to functionalize the synthesized carbon nanotubes while maintaining their good vertical alignment, an in situ functionalization process has for the first time been demonstrated. The in situ functionalization renders the vertically aligned carbon nanotubes a proper chemical reactivity for forming chemical bonding with other substrate materials such as gold and silicon. 2. An ultrafast microwave annealing process has been developed to reduce the defect density in vertically aligned carbon nanotubes. Raman and thermogravimetric analyses have shown a distinct defect reduction in the CNTs annealed in microwave for 3 min. Fibers spun from the as-annealed CNTs, in comparison with those from the pristine CNTs, show increases of ˜35% and ˜65%, respectively, in tensile strength (˜0.8 GPa) and modulus (˜90 GPa) during tensile testing; an ˜20% improvement in electrical conductivity (˜80000 S m-1) was also reported. The mechanism of the microwave response of CNTs was discussed. Such a microwave annealing process has been extended to the preparation of reduced graphene oxide. 3. Based on the fundamental understanding of interfacial thermal transport and surface chemistry of metals and carbon nanotubes, two major transfer/assembling processes have been developed: molecular bonding and metal bonding. Effective improvement of the interfacial thermal transport has been achieved by the interfacial bonding. 4. The thermal diffusivity of vertically aligned carbon nanotube (VACNT, multi-walled) films was measured by a laser flash technique, and shown to be ˜30 mm2 s-1 along the tube-alignment direction. The calculated thermal conductivities of the VACNT film and the individual CNTs are ˜27 and ˜540 W m-1 K-1, respectively. The technique was verified to be reliable although a proper sampling procedure is critical. A systematic parametric study of the effects of defects, buckling, tip-to-tip contacts, packing density, and tube-tube interaction on the thermal diffusivity was carried out. Defects and buckling decreased the thermal diffusivity dramatically. An increased packing density was beneficial in increasing the collective thermal conductivity of the VACNT film; however, the increased tube-tube interaction in dense VACNT films decreased the thermal conductivity of the individual CNTs. The tip-to-tip contact resistance was shown to be ˜1x10-7 m2 K W -1. The study will shed light on the potential application of VACNTs as thermal interface materials in microelectronic packaging. 5. A combined process of in situ functionalization and microwave curing has been developed to effective enhance the interface between carbon nanotubes and the epoxy matrix. Effective medium theory has been used to analyze the interfacial thermal resistance between carbon nanotubes and polymer matrix, and that between graphite nanoplatlets and polymer matrix.

GeNeDA: An Open-Source Workflow for Design Automation of Gene Regulatory Networks Inspired from Microelectronics.

PubMed

Madec, Morgan; Pecheux, François; Gendrault, Yves; Rosati, Elise; Lallement, Christophe; Haiech, Jacques

2016-10-01

The topic of this article is the development of an open-source automated design framework for synthetic biology, specifically for the design of artificial gene regulatory networks based on a digital approach. In opposition to other tools, GeNeDA is an open-source online software based on existing tools used in microelectronics that have proven their efficiency over the last 30 years. The complete framework is composed of a computation core directly adapted from an Electronic Design Automation tool, input and output interfaces, a library of elementary parts that can be achieved with gene regulatory networks, and an interface with an electrical circuit simulator. Each of these modules is an extension of microelectronics tools and concepts: ODIN II, ABC, the Verilog language, SPICE simulator, and SystemC-AMS. GeNeDA is first validated on a benchmark of several combinatorial circuits. The results highlight the importance of the part library. Then, this framework is used for the design of a sequential circuit including a biological state machine.

Goals, achievements of microelectronics program

NASA Astrophysics Data System (ADS)

Schronk, L.

1985-05-01

Besides reviewing the objectives of the government's microelectronics program, the Microelectronics Enterprise, the production of metal oxide semiconductors and bipolar integrated-circuit chips, specific research and development results to date, and the plans for future activity are discussed. Marketing and domestic demand are discussed.

Quantum information density scaling and qubit operation time constraints of CMOS silicon-based quantum computer architectures

NASA Astrophysics Data System (ADS)

Rotta, Davide; Sebastiano, Fabio; Charbon, Edoardo; Prati, Enrico

2017-06-01

Even the quantum simulation of an apparently simple molecule such as Fe2S2 requires a considerable number of qubits of the order of 106, while more complex molecules such as alanine (C3H7NO2) require about a hundred times more. In order to assess such a multimillion scale of identical qubits and control lines, the silicon platform seems to be one of the most indicated routes as it naturally provides, together with qubit functionalities, the capability of nanometric, serial, and industrial-quality fabrication. The scaling trend of microelectronic devices predicting that computing power would double every 2 years, known as Moore's law, according to the new slope set after the 32-nm node of 2009, suggests that the technology roadmap will achieve the 3-nm manufacturability limit proposed by Kelly around 2020. Today, circuital quantum information processing architectures are predicted to take advantage from the scalability ensured by silicon technology. However, the maximum amount of quantum information per unit surface that can be stored in silicon-based qubits and the consequent space constraints on qubit operations have never been addressed so far. This represents one of the key parameters toward the implementation of quantum error correction for fault-tolerant quantum information processing and its dependence on the features of the technology node. The maximum quantum information per unit surface virtually storable and controllable in the compact exchange-only silicon double quantum dot qubit architecture is expressed as a function of the complementary metal-oxide-semiconductor technology node, so the size scale optimizing both physical qubit operation time and quantum error correction requirements is assessed by reviewing the physical and technological constraints. According to the requirements imposed by the quantum error correction method and the constraints given by the typical strength of the exchange coupling, we determine the workable operation frequency range of a silicon complementary metal-oxide-semiconductor quantum processor to be within 1 and 100 GHz. Such constraint limits the feasibility of fault-tolerant quantum information processing with complementary metal-oxide-semiconductor technology only to the most advanced nodes. The compatibility with classical complementary metal-oxide-semiconductor control circuitry is discussed, focusing on the cryogenic complementary metal-oxide-semiconductor operation required to bring the classical controller as close as possible to the quantum processor and to enable interfacing thousands of qubits on the same chip via time-division, frequency-division, and space-division multiplexing. The operation time range prospected for cryogenic control electronics is found to be compatible with the operation time expected for qubits. By combining the forecast of the development of scaled technology nodes with operation time and classical circuitry constraints, we derive a maximum quantum information density for logical qubits of 2.8 and 4 Mqb/cm2 for the 10 and 7-nm technology nodes, respectively, for the Steane code. The density is one and two orders of magnitude less for surface codes and for concatenated codes, respectively. Such values provide a benchmark for the development of fault-tolerant quantum algorithms by circuital quantum information based on silicon platforms and a guideline for other technologies in general.

The Legacy of the Microelectronics Education Programme.

ERIC Educational Resources Information Center

Thorne, Michael

1987-01-01

Describes the Microelectronics Education Programme (MEP), a plan developed to help British secondary school students learn about microcomputers and the role of technology in society, and its successor, the Microelectronics Support Unit (MESU). Highlights include curriculum development, teacher training, computer assisted instruction and the…

Educational Implications of Microelectronics and Microprocessors.

ERIC Educational Resources Information Center

Harris, N. D. C., Ed.

This conference report explores microelectronic technology, its effect on educational methods and objectives, and its implications for educator responsibilities. Two main areas were considered: the significance of the likely impact of the large scale introduction of microprocessors and microelectronics on commercial and industrial processes, the…

Telerobotic electronic materials processing experiment

NASA Technical Reports Server (NTRS)

Ollendorf, Stanford

1991-01-01

The Office of Commercial Programs (OCP), working in conjunction with NASA engineers at the Goddard Space Flight Center, is supporting research efforts in robot technology and microelectronics materials processing that will provide many spinoffs for science and industry. The Telerobotic Materials Processing Experiment (TRMPX) is a Shuttle-launched materials processing test payload using a Get Away Special can. The objectives of the project are to define, develop, and demonstrate an automated materials processing capability under realistic flight conditions. TRMPX will provide the capability to test the production processes that are dependent on microgravity. The processes proposed for testing include the annealing of amorphous silicon to increase grain size for more efficient solar cells, thin film deposition to demonstrate the potential of fabricating solar cells in orbit, and the annealing of radiation damaged solar cells.

High-voltage solar-cell chip

NASA Technical Reports Server (NTRS)

Kapoor, V. J.; Valco, G. J.; Skebe, G. G.; Evans, J. C., Jr.

1985-01-01

Integrated circuit technology has been successfully applied to the design and fabrication of 0.5 x 0.5-cm planar multijunction solar-cell chips. Each of these solar cells consisted of six voltage-generating unit cells monolithically connected in series and fabricated on a 75-micron-thick, p-type, single crystal, silicon substrate. A contact photolithic process employing five photomask levels together with a standard microelectronics batch-processing technique were used to construct the solar-cell chip. The open-circuit voltage increased rapidly with increasing illumination up to 5 AM1 suns where it began to saturate at the sum of the individual unit-cell voltages at a maximum of 3.0 V. A short-circuit current density per unit cell of 240 mA/sq cm was observed at 10 AM1 suns.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Hernández-Rosales, E.; Cedeño, E.; Instituto Politécnico Nacional, Centro de Investigación en Ciencia Aplicada y Tecnología Avanzada, Legaria 694, Colonia Irrigación, CP 11500, México, DF

In this work a combined thermoacoustic and thermoreflectance set-up was designed for imaging biased microelectronic circuits. In particular, it was used with polycrystalline silicon resistive tracks grown on a monocrystalline Si substrate mounted on a test chip. Thermoreflectance images, obtained by scanning a probe laser beam on the sample surface, clearly show the regions periodically heated by Joule effect, which are associated to the electric current distribution in the circuit. The thermoacoustic signal, detected by a pyroelectric/piezoelectric sensor beneath the chip, also discloses the Joule contribution of the whole sample. However, additional information emerges when a non-modulated laser beam ismore » focused on the sample surface in a raster scan mode allowing imaging of the sample. The distribution of this supplementary signal is related to the voltage distribution along the circuit.« less

A Survey of Current Trends in Master's Programs in Microelectronics

ERIC Educational Resources Information Center

Bozanic, Mladen; Sinha, Saurabh

2018-01-01

Contribution: This paper brings forward a paradigm shift in microelectronic and nanoelectronic engineering education. Background: An increasing number of universities are offering graduate-level electrical engineering degree programs with multi-disciplinary Master's-level specialization in microelectronics or nanoelectronics. The paradigm shift…

Microelectronics in Education

ERIC Educational Resources Information Center

Orton, Richard J. J.

2011-01-01

The history and meaning of the term "microelectronics" is reviewed, followed by a discussion of the key inventions of the Intel microprocessor in 1971 and the Texas Instruments electronic pocket calculator in 1975. The six characteristic features of microelectronic components are then defined. The UK prime minister Jim Callaghan's…

Using SDI-12 with ST microelectronics MCU's

DOE Office of Scientific and Technical Information (OSTI.GOV)

Saari, Alexandra; Hinzey, Shawn Adrian; Frigo, Janette Rose

2015-09-03

ST Microelectronics microcontrollers and processors are readily available, capable and economical processors. Unfortunately they lack a broad user base like similar offerings from Texas Instrument, Atmel, or Microchip. All of these devices could be useful in economical devices for remote sensing applications used with environmental sensing. With the increased need for environmental studies, and limited budgets, flexibility in hardware is very important. To that end, and in an effort to increase open support of ST devices, I am sharing my teams' experience in interfacing a common environmental sensor communication protocol (SDI-12) with ST devices.

An integrated eddy current detection and imaging system on a silicon chip

NASA Technical Reports Server (NTRS)

Henderson, H. Thurman; Kartalia, K. P.; Dury, Joseph D.

1991-01-01

Eddy current probes have been used for many years for numerous sensing applications including crack detection in metals. However, these applications have traditionally used the eddy current effect in the form of a physically wound single or different probe pairs which of necessity must be made quite large compared to microelectronics dimensions. Also, the traditional wound probe can only take a point reading, although that point might include tens of individual cracks or crack arrays; thus, conventional eddy current probes are beset by two major problems: (1) no detailed information can be obtained about the crack or crack array; and (2) for applications such as quality assurance, a vast amount of time must be taken to scan a complete surface. Laboratory efforts have been made to fabricate linear arrays of single turn probes in a thick film format on a ceramic substrate as well as in a flexible cable format; however, such efforts inherently suffer from relatively large size requirements as well as sensitivity issues. Preliminary efforts to fully extend eddy current probing from a point or single dimensional level to a two dimensional micro-eddy current format on a silicon chip, which might overcome all of the above problems, are presented.

Silicon microelectronic field-emissive devices for advanced display technology

NASA Astrophysics Data System (ADS)

Morse, J. D.

1993-03-01

Field-emission displays (FED's) offer the potential advantages of high luminous efficiency, low power consumption, and low cost compared to AMLCD or CRT technologies. An LLNL team has developed silicon-point field emitters for vacuum triode structures and has also used thin-film processing techniques to demonstrate planar edge-emitter configurations. LLNL is interested in contributing its experience in this and other FED-related technologies to collaborations for commercial FED development. At LLNL, FED development is supported by computational capabilities in charge transport and surface/interface modeling in order to develop smaller, low-work-function field emitters using a variety of materials and coatings. Thin-film processing, microfabrication, and diagnostic/test labs permit experimental exploration of emitter and resistor structures. High field standoff technology is an area of long-standing expertise that guides development of low-cost spacers for FEDS. Vacuum sealing facilities are available to complete the FED production engineering process. Drivers constitute a significant fraction of the cost of any flat-panel display. LLNL has an advanced packaging group that can provide chip-on-glass technologies and three-dimensional interconnect generation permitting driver placement on either the front or the back of the display substrate.

Microelectronics and Special Education. CET/MEP Information Sheet.

ERIC Educational Resources Information Center

Council for Educational Technology, London (England).

Used as an additional aid by the teacher, microelectronics can assist mentally and physically handicapped children to meet educational objectives that have been specifically agreed upon for the individual child. Microelectronics can help deaf children develop speech production, communication skills, and grammar and sentence construction;…

Microelectronics and Music Education.

ERIC Educational Resources Information Center

Hofstetter, Fred T.

1979-01-01

This look at the impact of microelectronics on computer-assisted instruction (CAI) in music notes trends toward new applications and lower costs. Included are: a rationale for CAI in music, a list of sample programs, comparison of five microelectronic music systems, PLATO cost projections, and sources of further information. (SJL)

Integrated circuit-based instrumentation for microchip capillary electrophoresis.

PubMed

Behnam, M; Kaigala, G V; Khorasani, M; Martel, S; Elliott, D G; Backhouse, C J

2010-09-01

Although electrophoresis with laser-induced fluorescence (LIF) detection has tremendous potential in lab on chip-based point-of-care disease diagnostics, the wider use of microchip electrophoresis has been limited by the size and cost of the instrumentation. To address this challenge, the authors designed an integrated circuit (IC, i.e. a microelectronic chip, with total silicon area of <0.25 cm2, less than 5 mmx5 mm, and power consumption of 28 mW), which, with a minimal additional infrastructure, can perform microchip electrophoresis with LIF detection. The present work enables extremely compact and inexpensive portable systems consisting of one or more complementary metal-oxide-semiconductor (CMOS) chips and several other low-cost components. There are, to the authors' knowledge, no other reports of a CMOS-based LIF capillary electrophoresis instrument (i.e. high voltage generation, switching, control and interface circuit combined with LIF detection). This instrument is powered and controlled using a universal serial bus (USB) interface to a laptop computer. The authors demonstrate this IC in various configurations and can readily analyse the DNA produced by a standard medical diagnostic protocol (end-labelled polymerase chain reaction (PCR) product) with a limit of detection of approximately 1 ng/microl (approximately 1 ng of total DNA). The authors believe that this approach may ultimately enable lab-on-a-chip-based electrophoretic instruments that cost on the order of several dollars.

Using FLUKA to Calculate Spacecraft: Single Event Environments: A Practical Approach

NASA Technical Reports Server (NTRS)

Koontz, Steve; Boeder, Paul; Reddell, Brandon

2009-01-01

The FLUKA nuclear transport and reaction code can be developed into a practical tool for calculation of spacecraft and planetary surface asset SEE and TID environments. Nuclear reactions and secondary particle shower effects can be estimated with acceptable accuracy both in-flight and in test. More detailed electronic device and/or spacecraft geometries than are reported here are possible using standard FLUKA geometry utilities. Spacecraft structure and shielding mass. Effects of high Z elements in microelectronic structure as reported previously. Median shielding mass in a generic slab or concentric sphere target geometry are at least approximately applicable to more complex spacecraft shapes. Need the spacecraft shielding mass distribution function applicable to the microelectronic system of interest. SEE environment effects can be calculated for a wide range of spacecraft and microelectronic materials with complete nuclear physics. Evaluate benefits of low Z shielding mass can be evaluated relative to aluminum. Evaluate effects of high Z elements as constituents of microelectronic devices. The principal limitation on the accuracy of the FLUKA based method reported here are found in the limited accuracy and incomplete character of affordable heavy ion test data. To support accurate rate estimates with any calculation method, the aspect ratio of the sensitive volume(s) and the dependence must be better characterized.

Microelectronics in the Curriculum--The Science Teacher's Contribution.

ERIC Educational Resources Information Center

Association for Science Education, Cambridge (England).

Rapid advances in microelectronics over the past few years have generally been beneficial, but they have also created some problems, and questions must be asked about the philosophy for including aspects of the new technology in the school curriculum. This statement, prepared by the Microelectronics and Science Education Subcommittee of the…

Physical mechanisms of SiN{sub x} layer structuring with ultrafast lasers by direct and confined laser ablation

DOE Office of Scientific and Technical Information (OSTI.GOV)

Rapp, S., E-mail: rapp@hm.edu; Erlangen Graduate School in Advanced Optical Technologies; Heinrich, G.

2015-03-14

In the production process of silicon microelectronic devices and high efficiency silicon solar cells, local contact openings in thin dielectric layers are required. Instead of photolithography, these openings can be selectively structured with ultra-short laser pulses by confined laser ablation in a fast and efficient lift off production step. Thereby, the ultrafast laser pulse is transmitted by the dielectric layer and absorbed at the substrate surface leading to a selective layer removal in the nanosecond time domain. Thermal damage in the substrate due to absorption is an unwanted side effect. The aim of this work is to obtain a deepermore » understanding of the physical laser-material interaction with the goal of finding a damage-free ablation mechanism. For this, thin silicon nitride (SiN{sub x}) layers on planar silicon (Si) wafers are processed with infrared fs-laser pulses. Two ablation types can be distinguished: The known confined ablation at fluences below 300 mJ/cm{sup 2} and a combined partial confined and partial direct ablation at higher fluences. The partial direct ablation process is caused by nonlinear absorption in the SiN{sub x} layer in the center of the applied Gaussian shaped laser pulses. Pump-probe investigations of the central area show ultra-fast reflectivity changes typical for direct laser ablation. Transmission electron microscopy results demonstrate that the Si surface under the remaining SiN{sub x} island is not damaged by the laser ablation process. At optimized process parameters, the method of direct laser ablation could be a good candidate for damage-free selective structuring of dielectric layers on absorbing substrates.« less

Determination of recombination radius in Si for binary collision approximation codes

DOE PAGES

Vizkelethy, Gyorgy; Foiles, Stephen M.

2015-09-11

Displacement damage caused by ions or neutrons in microelectronic devices can have significant effect on the performance of these devices. Therefore, it is important to predict not only the displacement damage profile, but also its magnitude precisely. Analytical methods and binary collision approximation codes working with amorphous targets use the concept of displacement energy, the energy that a lattice atom has to receive to create a permanent replacement. It was found that this “displacement energy” is direction dependent; it can range from 12 to 32 eV in silicon. Obviously, this model fails in BCA codes that work with crystalline targets,more » such as Marlowe. Marlowe does not use displacement energy; instead, it uses lattice binding energy only and then pairs the interstitial atoms with vacancies. Then based on the configuration of the Frenkel pairs it classifies them as close, near, or distant pairs, and considers the distant pairs the permanent replacements. Unfortunately, this separation is an ad hoc assumption, and the results do not agree with molecular dynamics calculations. After irradiation, there is a prompt recombination of interstitials and vacancies if they are nearby, within a recombination radius. In order to implement this recombination radius in Marlowe, we used the comparison of MD and Marlowe calculation in a range of ion energies in single crystal silicon target. As a result, the calculations showed that a single recombination radius of ~7.4 Å in Marlowe for a range of ion energies gives an excellent agreement with MD.« less

Integrated low noise low power interface for neural bio-potentials recording and conditioning

NASA Astrophysics Data System (ADS)

Bottino, Emanuele; Martinoia, Sergio; Valle, Maurizio

2005-06-01

The recent progress in both neurobiology and microelectronics suggests the creation of new, powerful tools to investigate the basic mechanisms of brain functionality. In particular, a lot of efforts are spent by scientific community to define new frameworks devoted to the analysis of in-vitro cultured neurons. One possible approach is recording their spiking activity to monitor the coordinated cellular behaviour and get insights about neural plasticity. Due to the nature of neurons action-potentials, when considering the design of an integrated microelectronic-based recording system, a number of problems arise. First, one would desire to have a high number of recording sites (i.e. several hundreds): this poses constraints on silicon area and power consumption. In this regard, our aim is to integrate-through on-chip post-processing techniques-hundreds of bio-compatible microsensors together with CMOS standard-process low-power (i.e. some tenths of uW per channel) conditioning electronics. Each recording channel is provided with sampling electronics to insure synchronous recording so that, for example, cross-correlation between signals coming from different sites can be performed. Extra-cellular potentials are in the range of [50-150] uV, so a comparison in terms of noise-efficiency was carried out among different architectures and very low-noise pre-amplification electronics (i.e. less than 5 uVrms) was designed. As spikes measurements are made with respect to the voltage of a reference electrode, we opted for an AC-coupled differential-input preamplifier provided with band-pass filtering capability. To achieve this, we implemented large time-constant (up to seconds) integrated components in the preamp feedback path. Thus, we got rid also of random slow-drifting DC-offsets and common mode signals. The paper will present our achievements in the design and implementation of a fully integrated bio-abio interface to record neural spiking activity. In particular, preliminary results will be reported.

Risk Management of New Microelectronics for NASA: Radiation Knowledge-base

NASA Technical Reports Server (NTRS)

LaBel, Kenneth A.

2004-01-01

Contents include the following: NASA Missions - implications to reliability and radiation constraints. Approach to Insertion of New Technologies Technology Knowledge-base development. Technology model/tool development and validation. Summary comments.

Effect of the order of He{sup +} and H{sup +} ion co-implantation on damage generation and thermal evolution of complexes, platelets, and blisters in silicon

DOE Office of Scientific and Technical Information (OSTI.GOV)

Daghbouj, N.; Faculté des Sciences de Monastir, Université de Monastir, Monastir; Cherkashin, N., E-mail: nikolay.cherkashin@cemes.fr

2016-04-07

Hydrogen and helium co-implantation is nowadays used to efficiently transfer thin Si layers and fabricate silicon on insulator wafers for the microelectronic industry. The synergy between the two implants which is reflected through the dramatic reduction of the total fluence needed to fracture silicon has been reported to be strongly influenced by the implantation order. Contradictory conclusions on the mechanisms involved in the formation and thermal evolution of defects and complexes have been drawn. In this work, we have experimentally studied in detail the characteristics of Si samples co-implanted with He and H, comparing the defects which are formed followingmore » each implantation and after annealing. We show that the second implant always ballistically destroys the stable defects and complexes formed after the first implant and that the redistribution of these point defects among new complexes drives the final difference observed in the samples after annealing. When H is implanted first, He precipitates in the form of nano-bubbles and agglomerates within H-related platelets and nano-cracks. When He is implanted first, the whole He fluence is ultimately used to pressurize H-related platelets which quickly evolve into micro-cracks and surface blisters. We provide detailed scenarios describing the atomic mechanisms involved during and after co-implantation and annealing which well-explain our results and the reasons for the apparent contradictions reported at the state of the art.« less

Silicon exfoliation by hydrogen implantation: Actual nature of precursor defects

NASA Astrophysics Data System (ADS)

Kuisseu, Pauline Sylvia Pokam; Pingault, Timothée; Ntsoenzok, Esidor; Regula, Gabrielle; Mazen, Frédéric; Sauldubois, Audrey; Andreazza, Caroline

2017-06-01

MeV energy hydrogen implantation in silicon followed by a thermal annealing is a very smart way to produce high crystalline quality silicon substrates, much thinner than what can be obtained by diamond disk or wire sawing. Using this kerf-less approach, ultra-thin substrates with thicknesses between 15 μm and 100 μm, compatible with microelectronic and photovoltaic applications are reported. But, despite the benefits of this approach, there is still a lack of fundamental studies at this implantation energy range. However, if very few papers have addressed the MeV energy range, a lot of works have been carried out in the keV implantation energy range, which is the one used in the smart-cut® technology. In order to check if the nature and the growth mechanism of extended defects reported in the widely studied keV implantation energy range could be extrapolated in the MeV range, the thermal evolution of extended defects formed after MeV hydrogen implantation in (100) Si was investigated in this study. Samples were implanted at 1 MeV with different fluences ranging from 6 × 1016 H/cm2 to 2 × 1017 H/cm2 and annealed at temperatures up to 873 K. By cross-section transmission electron microscopy, we found that the nature of extended defects in the MeV range is quite different of what is observed in the keV range. In fact, in our implantation conditions, the generated extended defects are some kinds of planar clusters of gas-filled lenses, instead of platelets as commonly reported in the keV energy range. This result underlines that hydrogen behaves differently when it is introduced in silicon at high or low implantation energy. The activation energy of the growth of these extended defects is independent of the chosen fluence and is between (0.5-0.6) eV, which is very close to the activation energy reported for atomic hydrogen diffusion in a perfect silicon crystal.

Glass-to-Metal Seal Quality.

DTIC Science & Technology

1982-05-01

SELECTION AND EVALUATION . . . . . . . . . . . . . . 2 2.2 MICROELECTRONIC PACKAGES AND THEIR QUALITY . . . * . . . . . . . . 5 2.3 EQUIPMENT...liquid penetrant testing for various microelectronic package hermeticity. I t I MATERIALS AND EQUIPMENT 2.1 DYE PENETRANT SELECTION AND EVALUATION...a commercial visible dye penetrant and a commercial fluorescent dye penetrant were selected as being suitable for the testing of microelectronic

Studying tantalum-based high-κ dielectrics in terms of capacitance measurements

NASA Astrophysics Data System (ADS)

Stojanovska-Georgievska, L.

2016-08-01

The trend of rapid development of microelectronics towards nano-miniaturization dictates the inevitable introduction of dielectrics with high permittivity (high-κ dielectrics), as alternative material for replacing SiO2. Therefore, studying these materials in terms of their characteristics, especially in terms of reliability, is of great importance for proper design and manufacture of devices. In this paper, alteration of capacitance in different frequency regimes is used, in order to determine the overall behavior of the material. Samples investigated here are MOS structures containing nanoscale tantalum based dielectrics. Layers of pure Ta2O5, but also Hf and Ti doped tantalum pentoxide, i.e. Ta2O5:Hf and Ta2O5:Ti are studied here. All samples are considered as ultrathin oxide layers with thicknesses less than 15 nm, obtained by radio frequent sputtering on p-type silicon substrate. Measuring capacitive characteristics enables determination of several specific parameters of the structures. The obtained results for capacitance in accumulation, the thickness and time evolution of the interfacial SiO2 layer, values of flatband and threshold voltage, density of oxide charges, interfacial and border states, and reliability properties favor the possibilities for more intensive use of studied materials in new nanoelectronic technologies.

Fabrication of highly sensitive and selective H₂ gas sensor based on SnO₂ thin film sensitized with microsized Pd islands.

PubMed

Nguyen, Van Toan; Nguyen, Viet Chien; Nguyen, Van Duy; Hoang, Si Hong; Hugo, Nguyen; Nguyen, Duc Hoa; Nguyen, Van Hieu

2016-01-15

Ultrasensitive and selective hydrogen gas sensor is vital component in safe use of hydrogen that requires a detection and alarm of leakage. Herein, we fabricated a H2 sensing devices by adopting a simple design of planar-type structure sensor in which the heater, electrode, and sensing layer were patterned on the front side of a silicon wafer. The SnO2 thin film-based sensors that were sensitized with microsized Pd islands were fabricated at a wafer-scale by using a sputtering system combined with micro-electronic techniques. The thicknesses of SnO2 thin film and microsized Pd islands were optimized to maximize the sensing performance of the devices. The optimized sensor could be used for monitoring hydrogen gas at low concentrations of 25-250 ppm, with a linear dependence to H2 concentration and a fast response and recovery time. The sensor also showed excellent selectivity for monitoring H2 among other gases, such as CO, NH3, and LPG, and satisfactory characteristics for ensuring safety in handling hydrogen. The hydrogen sensing characteristics of the sensors sensitized with Pt and Au islands were also studied to clarify the sensing mechanisms. Copyright © 2015 Elsevier B.V. All rights reserved.

Microelectronics bioinstrumentation systems

NASA Technical Reports Server (NTRS)

Ko, W. H.

1977-01-01

Microelectronic bioinstrumentation systems to be employed in the Cardiovascular Deconditioning Program were developed. Implantable telemetry systems for long-term monitoring of animals on earth were designed to collect physiological data necessary for the understanding of the mechanisms of cardiovascular deconditioning. In-flight instrumentation systems, microelectronic instruments, and RF powering techniques for other life science experiments in the NASA program were studied.

Relevance of microelectronic education to industrial needs

NASA Technical Reports Server (NTRS)

Prince, J. L.; Lathrop, J. W.

1977-01-01

The relevance of microelectronic education to industrial needs was evaluated, and four categories were surveyed: (1) facts and rules; (2) skills; (3) personality; and (4) deductive-inductive reasoning. Examples of specific items in each category are given to illustrate their meaning and it was indicated as to which items in each category are strongly impacted by microelectronics courses and laboratories.

Ceramic materials of low-temperature synthesis for dielectric coating applied by 3D aerosol printing used in nano- and microelectronics, lighting engineering, and spacecraft control devices

NASA Astrophysics Data System (ADS)

Ivanov, A. A.; Tuev, V. I.; Nisan, A. V.; Potapov, G. N.

2016-11-01

A synthesis technique of low-temperature ceramic material based on aluminosilicates of dendrimer morphology capable to contain up to 80 wt % of nitrides and oxides of high-melting compounds as filler has been developed. The synthesis is based on a sol-gel method followed by mechanochemical treatment and ultrasonic dispersing. Dielectric ceramic layers with the layer thickness in the nanometer range and high thermal conductivity have been obtained for the first time by 3D aerosol printing of the synthesized material. The study of the obtained ceramic coating on the metal surface (Al) has proved its use prospects in microelectronics, light engineering, and devices for special purposes.

Annealing improves tribological property of poly(octadecene- alt -maleic anhydride) self-assembled film

NASA Astrophysics Data System (ADS)

Song, Shiyong; Liu, Lei; Zhang, Junyan

2011-09-01

A poly(octadecene-alt-maleic anhydride) (POMA) film was covalently immobilized on N-[3-(trimethoxylsilyl)propyl]ethylenediamine self-assembled monolayer modified silicon surface. Attenuated total reflectance Fourier transform infrared spectra were used to confirm the chemical bonding. Water contact angles and ellipsometric thicknesses were measured before and after annealing treatment. Atomic force microscopy was applied for top morphology, surface adhesion force and friction force. Anti-wear properties of the films were also evaluated on a ball-on-plate tribometer. It was found that annealing treatment which would evoke a conformation transform thermodynamically, was a critical step in the preparation of anti-wear films, especially for polymer ones. The correlation between structure and tribological property was revealed, which has profound meaning in designing excellent anti-wear nano-coatings used in microelectronic mechanical systems (MEMS).

Two-dimensional imaging detectors for structural biology with X-ray lasers.

PubMed

Denes, Peter

2014-07-17

Our ability to harness the advances in microelectronics over the past decade(s) for X-ray detection has resulted in significant improvements in the state of the art. Biology with X-ray free-electron lasers present daunting detector challenges: all of the photons arrive at the same time, and individual high peak power pulses must be read out shot-by-shot. Direct X-ray detection in silicon pixel detectors--monolithic or hybrid--are the standard for XFELs today. For structural biology, improvements are needed for today's 10-100 Hz XFELs, and further improvements are required for tomorrow's 10+ kHz XFELs. This article will discuss detector challenges, why they arise and ways to overcome them, along with the current state of the art. © 2014 The Author(s) Published by the Royal Society. All rights reserved.

Miniaturized flow injection analysis system

DOEpatents

Folta, James A.

1997-01-01

A chemical analysis technique known as flow injection analysis, wherein small quantities of chemical reagents and sample are intermixed and reacted within a capillary flow system and the reaction products are detected optically, electrochemically, or by other means. A highly miniaturized version of a flow injection analysis system has been fabricated utilizing microfabrication techniques common to the microelectronics industry. The microflow system uses flow capillaries formed by etching microchannels in a silicon or glass wafer followed by bonding to another wafer, commercially available microvalves bonded directly to the microflow channels, and an optical absorption detector cell formed near the capillary outlet, with light being both delivered and collected with fiber optics. The microflow system is designed mainly for analysis of liquids and currently measures 38.times.25.times.3 mm, but can be designed for gas analysis and be substantially smaller in construction.

Bi-level microelectronic device package with an integral window

DOEpatents

Peterson, Kenneth A.; Watson, Robert D.

2004-01-06

A package with an integral window for housing a microelectronic device. The integral window is bonded directly to the package without having a separate layer of adhesive material disposed in-between the window and the package. The device can be a semiconductor chip, CCD chip, CMOS chip, VCSEL chip, laser diode, MEMS device, or IMEMS device. The multilayered package can be formed of a LTCC or HTCC cofired ceramic material, with the integral window being simultaneously joined to the package during LTCC or HTCC processing. The microelectronic device can be flip-chip bonded so that the light-sensitive side is optically accessible through the window. The package has at least two levels of circuits for making electrical interconnections to a pair of microelectronic devices. The result is a compact, low-profile package having an integral window that is hermetically sealed to the package prior to mounting and interconnecting the microelectronic device(s).

Single level microelectronic device package with an integral window

DOEpatents

Peterson, Kenneth A.; Watson, Robert D.

2003-12-09

A package with an integral window for housing a microelectronic device. The integral window is bonded directly to the package without having a separate layer of adhesive material disposed in-between the window and the package. The device can be a semiconductor chip, CCD chip, CMOS chip, VCSEL chip, laser diode, MEMS device, or IMEMS device. The package can be formed of a multilayered LTCC or HTCC cofired ceramic material, with the integral window being simultaneously joined to the package during cofiring. The microelectronic device can be flip-chip interconnected so that the light-sensitive side is optically accessible through the window. A glob-top encapsulant or protective cover can be used to protect the microelectronic device and electrical interconnections. The result is a compact, low profile package having an integral window that is hermetically sealed to the package prior to mounting and interconnecting the microelectronic device.

Spreading devices into a 2-D module layout

DOE Office of Scientific and Technical Information (OSTI.GOV)

Koplow, Jeffrey P.; Gupta, Vipin P.; Nielson, Gregory N.

An apparatus, method, and system, the apparatus including a receiving member dimensioned to receive an array of microelectronic devices; and a linkage member coupled to the receiving member, the linkage member configured to move the receiving member in at least two dimensions so as to modify a spacing between the electronic devices within the array of microelectronic devices received by the receiving member. The method including coupling an array of microelectronic devices to an expansion assembly; and expanding the expansion assembly so as to expand the array of microelectronic devices in at least two directions within a single plane. Themore » system including a support member; an expansion assembly coupled to the support member, the expansion assembly having a plurality of receiving members configured to move in at least two dimensions within a single plane; and a plurality of microelectronic devices coupled to each of the plurality of receiving members.« less

A programmable microsystem using system-on-chip for real-time biotelemetry.

PubMed

Wang, Lei; Johannessen, Erik A; Hammond, Paul A; Cui, Li; Reid, Stuart W J; Cooper, Jonathan M; Cumming, David R S

2005-07-01

A telemetry microsystem, including multiple sensors, integrated instrumentation and a wireless interface has been implemented. We have employed a methodology akin to that for System-on-Chip microelectronics to design an integrated circuit instrument containing several "intellectual property" blocks that will enable convenient reuse of modules in future projects. The present system was optimized for low-power and included mixed-signal sensor circuits, a programmable digital system, a feedback clock control loop and RF circuits integrated on a 5 mm x 5 mm silicon chip using a 0.6 microm, 3.3 V CMOS process. Undesirable signal coupling between circuit components has been investigated and current injection into sensitive instrumentation nodes was minimized by careful floor-planning. The chip, the sensors, a magnetic induction-based transmitter and two silver oxide cells were packaged into a 36 mm x 12 mm capsule format. A base station was built in order to retrieve the data from the microsystem in real-time. The base station was designed to be adaptive and timing tolerant since the microsystem design was simplified to reduce power consumption and size. The telemetry system was found to have a packet error rate of 10(-3) using an asynchronous simplex link. Trials in animal carcasses were carried out to show that the transmitter was as effective as a conventional RF device whilst consuming less power.

Thermal Flow Sensors for Harsh Environments.

PubMed

Balakrishnan, Vivekananthan; Phan, Hoang-Phuong; Dinh, Toan; Dao, Dzung Viet; Nguyen, Nam-Trung

2017-09-08

Flow sensing in hostile environments is of increasing interest for applications in the automotive, aerospace, and chemical and resource industries. There are thermal and non-thermal approaches for high-temperature flow measurement. Compared to their non-thermal counterparts, thermal flow sensors have recently attracted a great deal of interest due to the ease of fabrication, lack of moving parts and higher sensitivity. In recent years, various thermal flow sensors have been developed to operate at temperatures above 500 °C. Microelectronic technologies such as silicon-on-insulator (SOI), and complementary metal-oxide semiconductor (CMOS) have been used to make thermal flow sensors. Thermal sensors with various heating and sensing materials such as metals, semiconductors, polymers and ceramics can be selected according to the targeted working temperature. The performance of these thermal flow sensors is evaluated based on parameters such as thermal response time, flow sensitivity. The data from thermal flow sensors reviewed in this paper indicate that the sensing principle is suitable for the operation under harsh environments. Finally, the paper discusses the packaging of the sensor, which is the most important aspect of any high-temperature sensing application. Other than the conventional wire-bonding, various novel packaging techniques have been developed for high-temperature application.

Thermal Flow Sensors for Harsh Environments

PubMed Central

Dinh, Toan; Dao, Dzung Viet

2017-01-01

Flow sensing in hostile environments is of increasing interest for applications in the automotive, aerospace, and chemical and resource industries. There are thermal and non-thermal approaches for high-temperature flow measurement. Compared to their non-thermal counterparts, thermal flow sensors have recently attracted a great deal of interest due to the ease of fabrication, lack of moving parts and higher sensitivity. In recent years, various thermal flow sensors have been developed to operate at temperatures above 500 °C. Microelectronic technologies such as silicon-on-insulator (SOI), and complementary metal-oxide semiconductor (CMOS) have been used to make thermal flow sensors. Thermal sensors with various heating and sensing materials such as metals, semiconductors, polymers and ceramics can be selected according to the targeted working temperature. The performance of these thermal flow sensors is evaluated based on parameters such as thermal response time, flow sensitivity. The data from thermal flow sensors reviewed in this paper indicate that the sensing principle is suitable for the operation under harsh environments. Finally, the paper discusses the packaging of the sensor, which is the most important aspect of any high-temperature sensing application. Other than the conventional wire-bonding, various novel packaging techniques have been developed for high-temperature application. PMID:28885595

Restoring visual perception using microsystem technologies: engineering and manufacturing perspectives.

PubMed

Krisch, I; Hosticka, B J

2007-01-01

Microsystem technologies offer significant advantages in the development of neural prostheses. In the last two decades, it has become feasible to develop intelligent prostheses that are fully implantable into the human body with respect to functionality, complexity, size, weight, and compactness. Design and development enforce collaboration of various disciplines including physicians, engineers, and scientists. The retina implant system can be taken as one sophisticated example of a prosthesis which bypasses neural defects and enables direct electrical stimulation of nerve cells. This micro implantable visual prosthesis assists blind patients to return to the normal course of life. The retina implant is intended for patients suffering from retinitis pigmentosa or macular degeneration. In this contribution, we focus on the epiretinal prosthesis and discuss topics like system design, data and power transfer, fabrication, packaging and testing. In detail, the system is based upon an implantable micro electro stimulator which is powered and controlled via a wireless inductive link. Microelectronic circuits for data encoding and stimulation are assembled on flexible substrates with an integrated electrode array. The implant system is encapsulated using parylene C and silicone rubber. Results extracted from experiments in vivo demonstrate the retinotopic activation of the visual cortex.

Interactions of atomic hydrogen with amorphous SiO2

NASA Astrophysics Data System (ADS)

Yue, Yunliang; Wang, Jianwei; Zhang, Yuqi; Song, Yu; Zuo, Xu

2018-03-01

Dozens of models are investigated by the first-principles calculations to simulate the interactions of an atomic hydrogen with a defect-free random network of amorphous SiO2 (a-SiO2) and oxygen vacancies. A wide variety of stable configurations are discovered due to the disorder of a-SiO2, and their structures, charges, magnetic moments, spin densities, and density of states are calculated. The atomic hydrogen interacts with the defect-free a-SiO2 in positively or negatively charged state, and produces the structures absent in crystalline SiO2. It passivates the neutral oxygen vacancies and generates two neutral hydrogenated E‧ centers with different Si dangling bond projections. Electron spin resonance parameters, including Fermi contacts, and g-tensors, are calculated for these centers. The atomic hydrogen interacts with the positive oxygen vacancies in dimer configuration, and generate four different positive hydrogenated defects, two of which are puckered like the Eγ‧ centers. This research helps to understand the interactions between an atomic hydrogen, and defect-free a-SiO2 and oxygen vacancies, which may generate the hydrogen-complexed defects that play a key role in the degeneration of silicon/silica-based microelectronic devices.

Biomolecular electronics in the twenty-first century.

PubMed

Phadke, R S

2001-01-01

A relentless decrease in the size of silicon-based microelectronics devices is posing problems. The most important among these are limitations imposed by quantum-size effects and instabilities introduced by the effects of thermal fluctuations. These inherent envisaged problems of present-day systems have prompted scientists to look for alternative options. Advancement in the understanding of natural systems such as photosynthetic apparatuses and genetic engineering has enabled attention to be focused on the use of biomolecules. Biomolecules have the advantages of functionality and specificity. The invention of scanning tunneling microscopy and atomic force microscopy has opened up the possibility of addressing and manipulating individual atoms and molecules. Realization of the power of self-assembly principles has opened a novel approach for designing and assembling molecular structures with desired intricate architecture. The utility of molecules such as DNA as a three-dimensional, high-density memory element and its capability for molecular computing have been fully recognized but not yet realized. More time and effort are necessary before devices that can transcend existing ones will become easily available. An overview of the current trends that are envisaged to give rich dividends in the next millennium are discussed.

Patterning layer-by-layer self-assembled multilayer by lithography and its applications to thin film devices

NASA Astrophysics Data System (ADS)

Hua, Feng

Nanoparticles are exciting materials because they exhibit unique electronic, catalytic, and optical properties. As a novel and promising nanobuilding block, it attracts considerable research efforts in its integration into a wide variety of thin film devices. Nanoparticles were adsorbed onto the substrate with layer-by-layer self-assembly which becomes of great interest due to its suitability in colloid particle assembly. Without extremely high temperatures and sophisticated equipment, molecularly organized films in an exactly pre-designed order can grow on almost all the substrates in nature. Two approaches generating spatially separated patterns comprised of nanoparticles are demonstrated, as well as two approaches patterning more than one type of nonoparticle on a silicon wafer. The structure of the thin film patterned by these approaches are analyzed and considered suitable to the thin film device. Finally, the combination of lithography and layer-by-layer (lbl) self-assembly is utilized to realize the microelectronic device with functional nonoparticles. The lbl self-assembly is the way to coat the nonoparticles and the lighography to pattern them. Based on the coating and patterning technique, a MOS-capacitor, a MOS field-effect-transistor and magnetic thin film cantilever are fabricated.

Practical Applications of Cosmic Ray Science: Spacecraft, Aircraft, Ground-Based Computation and Control Systems, and Human Health and Safety

NASA Technical Reports Server (NTRS)

Atwell, William; Koontz, Steve; Normand, Eugene

2012-01-01

Three twentieth century technological developments, 1) high altitude commercial and military aircraft; 2) manned and unmanned spacecraft; and 3) increasingly complex and sensitive solid state micro-electronics systems, have driven an ongoing evolution of basic cosmic ray science into a set of practical engineering tools needed to design, test, and verify the safety and reliability of modern complex technological systems. The effects of primary cosmic ray particles and secondary particle showers produced by nuclear reactions with the atmosphere, can determine the design and verification processes (as well as the total dollar cost) for manned and unmanned spacecraft avionics systems. Similar considerations apply to commercial and military aircraft operating at high latitudes and altitudes near the atmospheric Pfotzer maximum. Even ground based computational and controls systems can be negatively affected by secondary particle showers at the Earth s surface, especially if the net target area of the sensitive electronic system components is large. Finally, accumulation of both primary cosmic ray and secondary cosmic ray induced particle shower radiation dose is an important health and safety consideration for commercial or military air crews operating at high altitude/latitude and is also one of the most important factors presently limiting manned space flight operations beyond low-Earth orbit (LEO). In this paper we review the discovery of cosmic ray effects on the performance and reliability of microelectronic systems as well as human health and the development of the engineering and health science tools used to evaluate and mitigate cosmic ray effects in ground-based atmospheric flight, and space flight environments. Ground test methods applied to microelectronic components and systems are used in combinations with radiation transport and reaction codes to predict the performance of microelectronic systems in their operating environments. Similar radiation transport codes are used to evaluate possible human health effects of cosmic ray exposure, however, the health effects are based on worst-case analysis and extrapolation of a very limited human exposure data base combined with some limited experimental animal data. Finally, the limitations on human space operations beyond low-Earth orbit imposed by long term exposure to galactic cosmic rays are discussed.

Trusted Defense Microelectronics: Future Access and Capabilities Are Uncertain

DTIC Science & Technology

2015-10-28

Board Task Force on High Performance Microchip Supply and documentation and discussions with industry and DOD officials in September and October...the defense and microelectronics industry . DOD’s review of this report deemed some of this information as sensitive but unclassified. What GAO...increased specialization and industry consolidation. • Once dominated by domestic sources, the supply chain for microelectronics manufacturing is a global one

Microelectronics: The Nature of Work, Skills and Training. An Analysis of Case Studies from Developed and Developing Countries. Training Discussion Paper No. 51.

ERIC Educational Resources Information Center

Acero, Liliana

Microelectronic technologies have had an impact on the nature of work in industry for both white-collar and blue-collar workers. Evidence from sector- and enterprise-level studies shows changes in skills and job content for blue-collar workers involved with numerically controlled machine tools, robots, and other microelectronics applications.…

Design, fabrication, and characterization of 4H-silicon carbide rectifiers for power switching applications

NASA Astrophysics Data System (ADS)

Sheridan, David Charles

Silicon Carbide has received a substantial increase in research interest over the past few years as a base material system for high-frequency and high-power semiconductor devices. Of the over 1200 polytypes, 4H-SiC is the most attractive polytype for power devices due to its wide band gap (3.2eV), excellent thermal conductivity (4.9 W/cm·K), and high critical field strength (˜2 x 106 V/cm). Important for power devices, the 10x increase in critical field strength of SiC allows high voltage blocking layers to be fabricated significantly thinner than for comparable Si devices. For power rectifiers, this reduces device on-resistance, while maintaining the same high voltage blocking capability. In this work, 4H-SiC Schottky, pn, and junction barrier Schottky (JBS) rectifiers for use in high voltage switching applications have been designed, fabricated, and extensively characterized. First, a detailed review of 4H-SiC material parameters was performed and SiC models were implemented into a standard Si drift-diffusion numerical simulator. Using these models, a SiC simulation methodology was developed in order to enable predictive SiC device design. A wide variety of rectifier and edge termination designs were investigated and optimized with respect to breakdown efficiency, area consumption, resistance to interface charge, and fabrication practicality. Simulated termination methods include: field plates, floating guard rings, and a variety of junction termination extensions (JTE). Using the device simulation results, both Schottky and JBS rectifiers were fabricated with a novel self-aligned edge termination design, and fabricated with process elements developed at the Alabama Microelectronics Science and Technology Center facility. These rectifiers exhibited near-ideal forward characteristics and had blocking voltages in excess of 2.5kV. The SiC diodes were subjected to inductive switching tests, and were found to have superior reverse recovery characteristics compared to a similar Si diode. Finally, the performance of these SiC rectifiers were tested in inductive switching circuits and in high dose gamma radiation environments. In both cases, these devices were shown to be superior to their silicon counterparts. The details of this work was presented and published in the proceedings of the 45th International Meeting of the American Vacuum Society [1], the 1999 International Conference on Silicon Carbide and Related Materials [2, 3] and the 2000 European Conference on Silicon Carbide and Related Materials [4]. The expanded conference papers were published in the international journal. Solid-State Electronics [5, 6].

European semiconductor industry: Markets, government programs

NASA Astrophysics Data System (ADS)

Scharf, A.

1983-01-01

The marketing of the semiconductor industry in Europe and especially microelectronics which is situated between the millstones of USA and Japan is discussed. The concerned enterprises and governments appear to lack the motivation for close cooperation using European resources, corresponding to the ideas of the contracts on which the common market is based. It is felt that microelectronics is promoted in individual countries under more national perspectives, and the enterprises are pursuing strictly their own interests in cooperating with predominantly American and Japanese partners. An insight into the European semiconductor scene, its markets, as well as assistance for promotion and establishment available in the individual countries is discussed.

Low temperature wafer-level bonding for hermetic packaging of 3D microsystems

NASA Astrophysics Data System (ADS)

Tan, C. S.; Fan, J.; Lim, D. F.; Chong, G. Y.; Li, K. H.

2011-07-01

Metallic copper-copper (Cu-Cu) thermo-compression bonding, oxide-oxide (SiO2-SiO2) fusion bonding and silicon-silicon (Si-Si) direct bonding are investigated for potential application as hermetic seal in 3D microsystem packaging. Cavities are etched to a volume of 1.4 × 10-3 cm3 in accordance with the MIL-STD-883E standard prescribed for microelectronics packaging. In the case of metal bonding, a clean Cu layer with a thickness of 300 nm and a Ti barrier layer with an underlying thickness of 50 nm are used. The wafer pair is bonded at 300 °C under the application of a bonding force of 5500 N for 1 h. On the other hand, Si-Si bonding and SiO2-SiO2 bonding are initiated at room ambient after surface activation, followed by annealing in inert ambient at 300 °C for 1 h. The bonded cavities are stored in a helium bomb chamber and the leak rate is measured with a mass spectrometer. An excellent helium leak rate below 5 × 10-9 atm cm3 s-1 is detected for all cases and this is at least ten times better than the reject limit.

Evaporative CO2 microchannel cooling for the LHCb VELO pixel upgrade

NASA Astrophysics Data System (ADS)

de Aguiar Francisco, O. A.; Buytaert, J.; Collins, P.; Dumps, R.; John, M.; Mapelli, A.; Romagnoli, G.

2015-05-01

The LHCb Vertex Detector (VELO) will be upgraded in 2018 to a lightweight pixel detector capable of 40 MHz readout and operation in very close proximity to the LHC beams. The thermal management of the system will be provided by evaporative CO2 circulating in microchannels embedded within thin silicon plates. This solution has been selected due to the excellent thermal efficiency, the absence of thermal expansion mismatch with silicon ASICs and sensors, the radiation hardness of CO2, and very low contribution to the material budget. Although microchannel cooling is gaining considerable attention for applications related to microelectronics, it is still a novel technology for particle physics experiments, in particular when combined with evaporative CO2 cooling. The R&D effort for LHCb is focused on the design and layout of the channels together with a fluidic connector and its attachment which must withstand pressures up to 170 bar. Even distribution of the coolant is ensured by means of the use of restrictions implemented before the entrance to a race track like layout of the main cooling channels. The coolant flow and pressure drop have been simulated as well as the thermal performance of the device. This proceeding describes the design and optimization of the cooling system for LHCb and the latest prototyping results.

Integrating silicon photonic interconnects with CMOS: Fabrication to architecture

NASA Astrophysics Data System (ADS)

Sherwood, Nicholas Ramsey

While it was for many years the goal of microelectronics to speed up our daily tasks, the focus of today's technological developments is heavily centered on electronic media. Anyone can share their thoughts as text, sound, images or full videos, they can even make phone calls and download full movies on their computers, tablets and phones. The impact of this upsurge in bandwidth is directly on the infrastructure that carries this data. Long distance telecom lines were long ago replaced by optical fibers; now shorter and shorter distance connections have moved to optical transmission to keep up with the bandwidth requirements. Yet microprocessors that make up the switching nodes as well as the endpoints are not only stagnant in terms of processing speed, but also unlikely to continue Moore's transistor-doubling trend for much longer. Silicon photonics stands to make a technical leap in microprocessor technology by allowing monolithic communication speeds between arbitrarily spaced processing elements. The improvement in on-chip communication could reduce power and enable new improvements in this field. This work explores a few aspects involved in making such a leap practical in real life. The first part of the thesis develops process techniques and materials to make silicon photonics truly compatible with CMOS electronics, for two different stack layouts, including a glimpse into multilayerd photonics. Following this is an evaluation of the limitations of integrated devices and a post-fabrication/stabilizing solution using thermal index shifting. In the last parts we explore higher level device design and architecture on the SOI platform.

Study of a two-stage photobase generator for photolithography in microelectronics.

PubMed

Turro, Nicholas J; Li, Yongjun; Jockusch, Steffen; Hagiwara, Yuji; Okazaki, Masahiro; Mesch, Ryan A; Schuster, David I; Willson, C Grant

2013-03-01

The investigation of the photochemistry of a two-stage photobase generator (PBG) is described. Absorption of a photon by a latent PBG (1) (first step) produces a PBG (2). Irradiation of 2 in the presence of water produces a base (second step). This two-photon sequence (1 + hν → 2 + hν → base) is an important component in the design of photoresists for pitch division technology, a method that doubles the resolution of projection photolithography for the production of microelectronic chips. In the present system, the excitation of 1 results in a Norrish type II intramolecular hydrogen abstraction to generate a 1,4-biradiacal that undergoes cleavage to form 2 and acetophenone (Φ ∼ 0.04). In the second step, excitation of 2 causes cleavage of the oxime ester (Φ = 0.56) followed by base generation after reaction with water.

Optical Absorption and Visible Photoluminescence from Thin Films of Silicon Phthalocyanine Derivatives

PubMed Central

Rodríguez Gómez, Arturo; Moises Sánchez-Hernández, Carlos; Fleitman-Levin, Ilán; Arenas-Alatorre, Jesús; Carlos Alonso-Huitrón, Juan; Elena Sánchez Vergara, María

2014-01-01

The interest of microelectronics industry in new organic compounds for the manufacture of luminescent devices has increased substantially in the last decade. In this paper, we carried out a study of the usage feasibility of three organic bidentate ligands (2,6-dihydroxyanthraquinone, anthraflavic acid and potassium derivative salt of anthraflavic acid) for the synthesis of an organic semiconductor based in silicon phthalocyanines (SiPcs). We report the visible photoluminescence (PL) at room temperature obtained from thermal-evaporated thin films of these new materials. The surface morphology of these films was analyzed by atomic force microscopy (AFM) and scanning electron microscopy (SEM). AFM indicated that the thermal evaporation technique is an excellent resource in order to obtain low thin film roughness when depositing these kinds of compounds. Fourier transform infrared spectroscopy (FTIR) spectroscopy was employed to investigate possible changes in the intra-molecular bonds and to identify any evidence of crystallinity in the powder compounds and in the thin films after their deposition. FTIR showed that there was not any important change in the samples after the thermal deposition. The absorption coefficient (α) in the absorption region reveals non-direct transitions. Furthermore, the PL of all the investigated samples were observed with the naked eye in a bright background and also measured by a spectrofluorometer. The normalized PL spectra showed a Stokes shift ≈ 0.6 eV in two of our three samples, and no PL emission in the last one. Those results indicate that the Vis PL comes from a recombination of charge carriers between conduction band and valence band preceded by a non-radiative relaxation in the conduction band tails. PMID:28788200

Thermodynamic analysis of solid-fuel mixtures glycidyl azide polymer (GAP)/RDX for miniengines of microelectromechanical systems

NASA Astrophysics Data System (ADS)

Fut'ko, S. I.; Ermolaeva, E. M.; Dobrego, K. V.; Bondarenko, V. P.; Dolgii, L. N.

2011-09-01

On the basis of thermodynamic calculations we show that solid-fuel mixtures glycidyl azide polymer/RDX are promising for use in miniengines made on the basis of technologies of microelectromechanical systems of semiconductor microelectronics. It has been shown that small (up to 20 mass percent) additives of RDX to the glycidyl azide polymer markedly increase the values of the theoretical specific impulse and the thermal efficiency of the engine and decrease the quantity of undesirable solid carbon formed in combustion products of the mixed fuel. In so doing, these mixtures provide fairly low combustion temperatures not exceeding the thermostability limit of crystal silicon from which the miniengine case is made. The physicochemical factors influencing the value of the theoretical specific impulse of the mixed solid-fuel charge have been elucidated, and methods for its maximization have been proposed.

Suppressing the memory state of floating gate transistors with repeated femtosecond laser backside irradiations

NASA Astrophysics Data System (ADS)

Chambonneau, Maxime; Souiki-Figuigui, Sarra; Chiquet, Philippe; Della Marca, Vincenzo; Postel-Pellerin, Jérémy; Canet, Pierre; Portal, Jean-Michel; Grojo, David

2017-04-01

We demonstrate that infrared femtosecond laser pulses with intensity above the two-photon ionization threshold of crystalline silicon induce charge transport through the tunnel oxide in floating gate Metal-Oxide-Semiconductor transistor devices. With repeated irradiations of Flash memory cells, we show how the laser-produced free-electrons naturally redistribute on both sides of the tunnel oxide until the electric field of the transistor is suppressed. This ability enables us to determine in a nondestructive, rapid and contactless way the flat band and the neutral threshold voltages of the tested device. The physical mechanisms including nonlinear ionization, quantum tunneling of free-carriers, and flattening of the band diagram are discussed for interpreting the experiments. The possibility to control the carriers in memory transistors with ultrashort pulses holds promises for fast and remote device analyses (reliability, security, and defectivity) and for considerable developments in the growing field of ultrafast microelectronics.

Use of chemical-mechanical polishing for fabricating photonic bandgap structures

DOEpatents

Fleming, James G.; Lin, Shawn-Yu; Hetherington, Dale L.; Smith, Bradley K.

1999-01-01

A method is disclosed for fabricating a two- or three-dimensional photonic bandgap structure (also termed a photonic crystal, photonic lattice, or photonic dielectric structure). The method uses microelectronic integrated circuit (IC) processes to fabricate the photonic bandgap structure directly upon a silicon substrate. One or more layers of arrayed elements used to form the structure are deposited and patterned, with chemical-mechanical polishing being used to planarize each layer for uniformity and a precise vertical tolerancing of the layer. The use of chemical-mechanical planarization allows the photonic bandgap structure to be formed over a large area with a layer uniformity of about two-percent. Air-gap photonic bandgap structures can also be formed by removing a spacer material separating the arrayed elements by selective etching. The method is useful for fabricating photonic bandgap structures including Fabry-Perot resonators and optical filters for use at wavelengths in the range of about 0.2-20 .mu.m.

Hybrid electro-optical nanosystem for neurons investigation

NASA Astrophysics Data System (ADS)

Miu, Mihaela; Kleps, Irina; Craciunoiu, Florea; Simion, Monica; Bragaru, Adina; Ignat, Teodora

2010-11-01

The scope of this paper is development of a new laboratory-on-a-chip (LOC) device for biomedical studies consisting of a microfluidic system coupled to microelectronic/optical transducers with nanometric features, commonly called biosensors. The proposed device is a hybrid system with sensing element on silicon (Si) chip and microfluidic system on polydimethylsiloxane (PDMS) substrates, taking into accounts their particular advantages. Different types of nanoelectrode arrays, positioned in the reactor, have been investigated as sensitive elements for electrical detection and the recording of neuron extracellular electric activity has been monitorized in parallel with whole-cell patch-clamp membrane current. Moreover, using an additional porosification process the sensing element became efficient for optical detection also. The preliminary test results demonstrate the functionality of the proposed design and also the fabrication technology, the devices bringing advantages in terms enhancement of sensitivity in both optoelectronic detection schemes.

Miniaturized flow injection analysis system

DOEpatents

Folta, J.A.

1997-07-01

A chemical analysis technique known as flow injection analysis is described, wherein small quantities of chemical reagents and sample are intermixed and reacted within a capillary flow system and the reaction products are detected optically, electrochemically, or by other means. A highly miniaturized version of a flow injection analysis system has been fabricated utilizing microfabrication techniques common to the microelectronics industry. The microflow system uses flow capillaries formed by etching microchannels in a silicon or glass wafer followed by bonding to another wafer, commercially available microvalves bonded directly to the microflow channels, and an optical absorption detector cell formed near the capillary outlet, with light being both delivered and collected with fiber optics. The microflow system is designed mainly for analysis of liquids and currently measures 38{times}25{times}3 mm, but can be designed for gas analysis and be substantially smaller in construction. 9 figs.

Periodic mesoporous organosilicas containing interconnected [Si(CH2)]3 rings.

PubMed

Landskron, Kai; Hatton, Benjamin D; Perovic, Doug D; Ozin, Geoffrey A

2003-10-10

A periodic mesoporous organosilica composed of interconnected three-ring [Si(CH2)]3 units built of three SiO2(CH2)2 tetrahedral subunits is reported. It represents the archetype of a previously unknown class of nanocomposite materials in which two bridging organic groups are bound to each silicon atom. It can be obtained with powder and oriented film morphologies. The nanocomposite is self-assembled from the cyclic three-ring silsesquioxane [(EtO)2Si(CH2)]3 precursor and a surfactant mesophase to give a well-ordered mesoporous framework. Low dielectric constants and good mechanical stability of the films were measured, making this material interesting for microelectronic applications. Methylene group reactivity of the three-ring precursor provides entry to a family of nanocomposites, exemplified by the synthesis and self-assembly of [(EtO)2Si(CHR)][(EtO)2Si(CH2)]2 (where R indicates iodine, bromine, or an ethyl group).

A microelectronics approach for the ROSETTA surface science package

NASA Technical Reports Server (NTRS)

Sandau, Rainer (Editor); Alkalaj, Leon

1996-01-01

In relation to the Rosetta surface science package, the benefits of the application of advanced microelectronics packaging technologies and other output from the Mars environmental survey (MESUR) integrated microelectronics study are reported on. The surface science package will be designed to operate for tens of hours. Its limited mass and power consumption make necessary a highly integrated design with all the instruments and subunits operated from a centralized control and information management subsystem.

Molecular tailoring of interfaces for thin film on substrate systems

NASA Astrophysics Data System (ADS)

Grady, Martha Elizabeth

Thin film on substrate systems appear most prevalently within the microelectronics industry, which demands that devices operate in smaller and smaller packages with greater reliability. The reliability of these multilayer film systems is strongly influenced by the adhesion of each of the bimaterial interfaces. During use, microelectronic components undergo thermo-mechanical cycling, which induces interfacial delaminations leading to failure of the overall device. The ability to tailor interfacial properties at the molecular level provides a mechanism to improve thin film adhesion, reliability and performance. This dissertation presents the investigation of molecular level control of interface properties in three thin film-substrate systems: photodefinable polyimide films on passivated silicon substrates, self-assembled monolayers at the interface of Au films and dielectric substrates, and mechanochemically active materials on rigid substrates. For all three materials systems, the effect of interfacial modifications on adhesion is assessed using a laser-spallation technique. Laser-induced stress waves are chosen because they dynamically load the thin film interface in a precise, noncontacting manner at high strain rates and are suitable for both weak and strong interfaces. Photodefinable polyimide films are used as dielectrics in flip chip integrated circuit packages to reduce the stress between silicon passivation layers and mold compound. The influence of processing parameters on adhesion is examined for photodefinable polyimide films on silicon (Si) substrates with three different passivation layers: silicon nitride (SiNx), silicon oxynitride (SiOxNy), and the native silicon oxide (SiO2). Interfacial strength increases when films are processed with an exposure step as well as a longer cure cycle. Additionally, the interfacial fracture energy is assessed using a dynamic delamination protocol. The high toughness of this interface (ca. 100 J/m2) makes it difficult to use more conventional interfacial fracture testing techniques. Self-assembled monolayers (SAMs) provide an enabling platform for molecular tailoring of the chemical and physical properties of an interface in an on-demand fashion. The SAM end-group functionality is systematically varied and the corresponding effect on interfacial adhesion between a transfer printed gold (Au) film and a fused silica substrate is measured. SAMs with four different end groups are investigated: methyl, amine, bromine and thiol. In addition to these four end groups, mixed monolayers of increasing molar ratio of thiol to methyl SAMs in solution are investigated. There is a strong dependence of interfacial chemistry on the adhesion strength of Au films. In addition to the chemical functionality of the SAM, surface roughness of the underlying substrate also has a significant impact on the interfacial strength. Thin films of mechanochemically active polymer are subjected to laser-generated, high amplitude acoustic pulses. Stress wave propagation through the film produces large amplitude stresses (>100 MPa) in short time frames (10-20 ns), leading to very high strain-rates (ca. 107-108 s -1). The polymer system, spiropyran (SP)- linked polystyrene (PS), undergoes a force-induced chemical reaction causing fluorescence and color change. Activation of SP is evident via a fluorescence signal in thin films subject to high strain-rates. In contrast, quasi-static loading of bulk SP-linked PS samples failed to result in SP activation. Mechanoresponsive coatings have potential to indicate deformation under shockwave loading conditions. In addition to SP-linked polymer films, the activation of spiropyran interfacial molecules with different side groups is characterized as they adsorb onto a SAM platform with preferential amine terminating chemistry. The reactivity of SP monolayers due to UV irradiation is evaluated by water contact angle goniometry and fluorescence spectroscopy. Side groups on the interfacial spiropyran molecule affect the reactivity and the proximity of neighboring spiropyrans can prevent efficient mobility.

Tailoring the Optical Properties of Silicon with Ion Beam Created Nanostructures for Advanced Photonics Applications

NASA Astrophysics Data System (ADS)

Akhter, Perveen

In today's fast life, energy consumption has increased more than ever and with that the demand for a renewable and cleaner energy source as a substitute for the fossil fuels has also increased. Solar radiations are the ultimate source of energy but harvesting this energy in a cost effective way is a challenging task. Si is the dominating material for microelectronics and photovoltaics. But owing to its indirect band gap, Si is an inefficient light absorber, thus requiring a thickness of solar cells beyond tens of microns which increases the cost of solar energy. Therefore, techniques to increase light absorption in thin film Si solar cells are of great importance and have been the focus of research for a few decades now. Another big issue of technology in this fast-paced world is the computing rate or data transfer rate between components of a chip in ultra-fast processors. Existing electronic interconnects suffering from the signal delays and heat generation issues are unable to handle high data rates. A possible solution to this problem is in replacing the electronic interconnects with optical interconnects which have large data carrying capacity. However, optical components are limited in size by the fundamental laws of diffraction to about half a wavelength of light and cannot be combined with nanoscale electronic components. Tremendous research efforts have been directed in search of an advanced technology which can bridge the size gap between electronic and photonic worlds. An emerging technology of "plasmonics'' which exploits the extraordinary optical properties of metal nanostructures to tailor the light at nanoscale has been considered a potential solution to both of the above-mentioned problems. Research conducted for this dissertation has an overall goal to investigate the optical properties of silicon with metal nanostructures for photovoltaics and advanced silicon photonics applications. The first part of the research focuses on achieving enhanced light trapping in poly-Si thin films using ion implantation induced surface texturing. In addition to surface texturing produced by H and Ar ion implantations, metal nanostructures are also added to the surface to further suppress light reflection at the plasmonic resonance of metal nanostructures. Remarkable suppression has been achieved resulting in reflection from the air/Si interface to below ˜5%. In the second part, optical properties of embedded metal nanostructures in silicon matrix gettered into the ion implantation created nanocavities are studied. Embedded nanostructures can have a huge impact in future photonics applications by replacing the existing electronic and photonic components such as interconnects, waveguides, modulators and amplifiers with their plasmonic counterparts. This new method of encapsulating metal nanostructures in silicon is cost-effective and compatible with silicon fabrication technology. Spectroscopic ellipsometry is used to study the dielectric properties of silicon with embedded silver nanostructures. High absorption regions around 900 nm, corresponding to plasmonic absorption of Ag nanoparticles in Si, have been observed and compared to theoretical calculations and simulation results. The possibility of modifying the dielectric function of Si with metal nanostructures can lay the foundation for functional base structures for advanced applications in silicon photonics, photovoltaics and plasmonics.

NASA Tech Briefs, October 2011

NASA Technical Reports Server (NTRS)

2011-01-01

Topics covered include: Laser Truss Sensor for Segmented Telescope Phasing; Qualifications of Bonding Process of Temperature Sensors to Deep-Space Missions; Optical Sensors for Monitoring Gamma and Neutron Radiation; Compliant Tactile Sensors; Cytometer on a Chip; Measuring Input Thresholds on an Existing Board; Scanning and Defocusing Properties of Microstrip Reflectarray Antennas; Cable Tester Box; Programmable Oscillator; Fault-Tolerant, Radiation-Hard DSP; Sub-Shot Noise Power Source for Microelectronics; Asynchronous Message Service Reference Implementation; Zero-Copy Objects System; Delay and Disruption Tolerant Networking MACHETE Model; Contact Graph Routing; Parallel Eclipse Project Checkout; Technique for Configuring an Actively Cooled Thermal Shield in a Flight System; Use of Additives to Improve Performance of Methyl Butyrate-Based Lithium-Ion Electrolytes; Li-Ion Cells Employing Electrolytes with Methyl Propionate and Ethyl Butyrate Co-Solvents; Improved Devices for Collecting Sweat for Chemical Analysis; Tissue Photolithography; Method for Impeding Degradation of Porous Silicon Structures; External Cooling Coupled to Reduced Extremity Pressure Device; A Zero-Gravity Cup for Drinking Beverages in Microgravity; Co-Flow Hollow Cathode Technology; Programmable Aperture with MEMS Microshutter Arrays; Polished Panel Optical Receiver for Simultaneous RF/Optical Telemetry with Large DSN Antennas; Adaptive System Modeling for Spacecraft Simulation; Lidar-Based Navigation Algorithm for Safe Lunar Landing; Tracking Object Existence From an Autonomous Patrol Vehicle; Rad-Hard, Miniaturized, Scalable, High-Voltage Switching Module for Power Applications; and Architecture for a 1-GHz Digital RADAR.

Integrating carbon nanotube forests into polysilicon MEMS: Growth kinetics, mechanisms, and adhesion

DOE Office of Scientific and Technical Information (OSTI.GOV)

Ubnoske, Stephen M.; Radauscher, Erich J.; Meshot, Eric R.

The growth of carbon nanotubes (CNTs) on polycrystalline silicon substrates was studied to improve the design of CNT field emission sources for microelectromechanical systems (MEMS) applications and vacuum microelectronic devices (VMDs). Microwave plasma-enhanced chemical vapor deposition (PECVD) was used for CNT growth, resulting in CNTs that incorporate the catalyst particle at their base. The kinetics of CNT growth on polysilicon were compared to growth on Si (100) using the model of Deal and Grove, finding activation energies of 1.61 and 1.54 eV for the nucleation phase of growth and 1.90 and 3.69 eV for the diffusion-limited phase on Si (100)more » and polysilicon, respectively. Diffusivity values for growth on polysilicon were notably lower than the corresponding values on Si (100) and the growth process became diffusion-limited earlier. Evidence favors a surface diffusion growth mechanism involving diffusion of carbon precursor species along the length of the CNT forest to the catalyst at the base. Explanations for the differences in activation energies and diffusivities were elucidated by SEM analysis of the catalyst nanoparticle arrays and through wide-angle X-ray scattering (WAXS) of CNT forests. As a result, methods are presented to improve adhesion of CNT films during operation as field emitters, resulting in a 2.5× improvement.« less

Integrating carbon nanotube forests into polysilicon MEMS: Growth kinetics, mechanisms, and adhesion

DOE PAGES

Ubnoske, Stephen M.; Radauscher, Erich J.; Meshot, Eric R.; ...

2016-11-19

The growth of carbon nanotubes (CNTs) on polycrystalline silicon substrates was studied to improve the design of CNT field emission sources for microelectromechanical systems (MEMS) applications and vacuum microelectronic devices (VMDs). Microwave plasma-enhanced chemical vapor deposition (PECVD) was used for CNT growth, resulting in CNTs that incorporate the catalyst particle at their base. The kinetics of CNT growth on polysilicon were compared to growth on Si (100) using the model of Deal and Grove, finding activation energies of 1.61 and 1.54 eV for the nucleation phase of growth and 1.90 and 3.69 eV for the diffusion-limited phase on Si (100)more » and polysilicon, respectively. Diffusivity values for growth on polysilicon were notably lower than the corresponding values on Si (100) and the growth process became diffusion-limited earlier. Evidence favors a surface diffusion growth mechanism involving diffusion of carbon precursor species along the length of the CNT forest to the catalyst at the base. Explanations for the differences in activation energies and diffusivities were elucidated by SEM analysis of the catalyst nanoparticle arrays and through wide-angle X-ray scattering (WAXS) of CNT forests. As a result, methods are presented to improve adhesion of CNT films during operation as field emitters, resulting in a 2.5× improvement.« less

Correction of absorption-edge artifacts in polychromatic X-ray tomography in a scanning electron microscope for 3D microelectronics

DOE Office of Scientific and Technical Information (OSTI.GOV)

Laloum, D., E-mail: david.laloum@cea.fr; CEA, LETI, MINATEC Campus, 17 rue des Martyrs, 38054 Grenoble Cedex 9; STMicroelectronics, 850 rue Jean Monnet, 38926 Crolles

2015-01-15

X-ray tomography is widely used in materials science. However, X-ray scanners are often based on polychromatic radiation that creates artifacts such as dark streaks. We show this artifact is not always due to beam hardening. It may appear when scanning samples with high-Z elements inside a low-Z matrix because of the high-Z element absorption edge: X-rays whose energy is above this edge are strongly absorbed, violating the exponential decay assumption for reconstruction algorithms and generating dark streaks. A method is proposed to limit the absorption edge effect and is applied on a microelectronic case to suppress dark streaks between interconnections.

Evaluation of advanced microelectronics for inclusion in MIL-STD-975

NASA Technical Reports Server (NTRS)

Scott, W. Richard

1991-01-01

The approach taken by NASA and JPL (Jet Propulsion Laboratory) in the development of a MIL-STD-975 section which contains advanced technology such as Large Scale Integration and Very Large Scale Integration (LSI/VLSI) microelectronic devices is described. The parts listed in this section are recommended as satisfactory for NASA flight applications, in the absence of alternate qualified devices, based on satisfactory results of a vendor capability audit, the availability of sufficient characterization and reliability data from the manufacturers and users and negotiated detail procurement specifications. The criteria used in the selection and evaluation of the vendors and candidate parts, the preparation of procurement specifications, and the status of this activity are discussed.

Multilayered Microelectronic Device Package With An Integral Window

DOEpatents

Peterson, Kenneth A.; Watson, Robert D.

2004-10-26

A microelectronic package with an integral window mounted in a recessed lip for housing a microelectronic device. The device can be a semiconductor chip, a CCD chip, a CMOS chip, a VCSEL chip, a laser diode, a MEMS device, or a IMEMS device. The package can be formed of a low temperature co-fired ceramic (LTCC) or high temperature cofired ceramic (HTCC) multilayered material, with the integral window being simultaneously joined (e.g. co-fired) to the package body during LTCC or HTCC processing. The microelectronic device can be flip-chip bonded and oriented so that a light-sensitive side is optically accessible through the window. The result is a compact, low profile package, having an integral window mounted in a recessed lip, that can be hermetically sealed.

Macro management of microelectronics in India in 1990s

NASA Astrophysics Data System (ADS)

Gupta, Parmod K.

1992-08-01

Development of microelectronics is taking place at a very fast rate all over the globe, including India. New technologies are introduced at very short intervals in order to capture the consumer market. It is essential that these technologies are managed properly at the macro level in order to bring the desired results. Microelectronics plays a very vital role in office automation for achieving cost effective results in a highly competitive environment. Introduction of various facilities like laser printers, photo copiers, dictaphone-selectronic boards, electronic telexes, teleconference rooms, telephone answering machines, computer, word processors, sensors, etc. have all revolutionized the industry. Keeping the above in view, the present and future status of microelectronics, with special emphasis on its role in office automation in India, are discussed in detail in this paper.

Center for Space Microelectronics Technology. 1993 Technical Report

NASA Technical Reports Server (NTRS)

1995-01-01

The 1993 Technical Report of the Jet Propulsion Laboratory Center for Space Microelectronics Technology summarizes the technical accomplishments, publications, presentations, and patents of the Center during the past year. The report lists 170 publications, 193 presentations, and 84 New Technology Reports and patents. The 1993 Technical Report of the Jet Propulsion Laboratory Center for Space Microelectronics Technology summarizes the technical accomplishments, publications, presentations, and patents of the Center during the past year. The report lists 170 publications, 193 presentations, and 84 New Technology Reports and patents.

From neural-based object recognition toward microelectronic eyes

NASA Technical Reports Server (NTRS)

Sheu, Bing J.; Bang, Sa Hyun

1994-01-01

Engineering neural network systems are best known for their abilities to adapt to the changing characteristics of the surrounding environment by adjusting system parameter values during the learning process. Rapid advances in analog current-mode design techniques have made possible the implementation of major neural network functions in custom VLSI chips. An electrically programmable analog synapse cell with large dynamic range can be realized in a compact silicon area. New designs of the synapse cells, neurons, and analog processor are presented. A synapse cell based on Gilbert multiplier structure can perform the linear multiplication for back-propagation networks. A double differential-pair synapse cell can perform the Gaussian function for radial-basis network. The synapse cells can be biased in the strong inversion region for high-speed operation or biased in the subthreshold region for low-power operation. The voltage gain of the sigmoid-function neurons is externally adjustable which greatly facilitates the search of optimal solutions in certain networks. Various building blocks can be intelligently connected to form useful industrial applications. Efficient data communication is a key system-level design issue for large-scale networks. We also present analog neural processors based on perceptron architecture and Hopfield network for communication applications. Biologically inspired neural networks have played an important role towards the creation of powerful intelligent machines. Accuracy, limitations, and prospects of analog current-mode design of the biologically inspired vision processing chips and cellular neural network chips are key design issues.

Copper-Based OHMIC Contracts for the Si/SiGe Heterojunction Bipolar Transistor Structure

NASA Technical Reports Server (NTRS)

Das, Kalyan; Hall, Harvey

1999-01-01

Silicon based heterojunction bipolar transistors (HBT) with SiGe base are potentially important devices for high-speed and high-frequency microelectronics. These devices are particularly attractive as they can be fabricated using standard Si processing technology. However, in order to realize the full potential of devices fabricated in this material system, it is essential to be able to form low resistance ohmic contacts using low thermal budget process steps and have full compatibility with VLSI/ULSI processing. Therefore, a study was conducted in order to better understand the contact formation and to develop optimized low resistance contacts to layers with doping densities corresponding to the p-type SiGe base and n-type Si emitter regions of the HBTS. These as-grown doped layers were implanted with BF(sub 2) up to 1 X 10(exp 16)/CM(exp 2) and As up to 5 x 10(exp 15)/CM2, both at 30 keV for the p-type SiGe base and n-type Si emitter layers, respectively, in order to produce a low sheet resistance surface layer. Standard transfer length method (TLM) contact pads on both p and n type layers were deposited using an e-beam evaporated trilayer structure of Ti/CufTi/Al (25)A/1500A/250A/1000A). The TLM pads were delineated by a photoresist lift-off procedure. These contacts in the as-deposited state were ohmic, with specific contact resistances for the highest implant doses of the order of 10(exp -7) ohm-CM2 and lower.

Job stress models, depressive disorders and work performance of engineers in microelectronics industry.

PubMed

Chen, Sung-Wei; Wang, Po-Chuan; Hsin, Ping-Lung; Oates, Anthony; Sun, I-Wen; Liu, Shen-Ing

2011-01-01

Microelectronic engineers are considered valuable human capital contributing significantly toward economic development, but they may encounter stressful work conditions in the context of a globalized industry. The study aims at identifying risk factors of depressive disorders primarily based on job stress models, the Demand-Control-Support and Effort-Reward Imbalance models, and at evaluating whether depressive disorders impair work performance in microelectronics engineers in Taiwan. The case-control study was conducted among 678 microelectronics engineers, 452 controls and 226 cases with depressive disorders which were defined by a score 17 or more on the Beck Depression Inventory and a psychiatrist's diagnosis. The self-administered questionnaires included the Job Content Questionnaire, Effort-Reward Imbalance Questionnaire, demography, psychosocial factors, health behaviors and work performance. Hierarchical logistic regression was applied to identify risk factors of depressive disorders. Multivariate linear regressions were used to determine factors affecting work performance. By hierarchical logistic regression, risk factors of depressive disorders are high demands, low work social support, high effort/reward ratio and low frequency of physical exercise. Combining the two job stress models may have better predictive power for depressive disorders than adopting either model alone. Three multivariate linear regressions provide similar results indicating that depressive disorders are associated with impaired work performance in terms of absence, role limitation and social functioning limitation. The results may provide insight into the applicability of job stress models in a globalized high-tech industry considerably focused in non-Western countries, and the design of workplace preventive strategies for depressive disorders in Asian electronics engineering population.

Highly photoresponsive and wavelength-selective circularly-polarized-light detector based on metal-oxides hetero-chiral thin film.

PubMed

Lee, Seung Hee; Singh, Dhruv Pratap; Sung, Ji Ho; Jo, Moon-Ho; Kwon, Ki Chang; Kim, Soo Young; Jang, Ho Won; Kim, Jong Kyu

2016-01-22

A highly efficient circularly-polarized-light detector with excellent wavelength selectivity is demonstrated with an elegant and simple microelectronics-compatible way. The circularly-polarized-light detector based on a proper combination of the geometry-controlled TiO2-SnO2 hetero-chiral thin film as an effective chiroptical filter and the Si active layer shows excellent chiroptical response with external quantum efficiency as high as 30% and high helicity selectivity of ~15.8% in an intended wavelength range. Furthermore, we demonstrated the ability of manipulating both bandwidth and responsivity of the detector simultaneously in whole visible wavelength range by a precise control over the geometry and materials constituting hetero-chiral thin film. The high efficiency, wavelength selectivity and compatibility with conventional microelectronics processes enabled by the proposed device can result in remarkable developments in highly integrated photonic platforms utilizing chiroptical responses.

Highly photoresponsive and wavelength-selective circularly-polarized-light detector based on metal-oxides hetero-chiral thin film

PubMed Central

Lee, Seung Hee; Singh, Dhruv Pratap; Sung, Ji Ho; Jo, Moon-Ho; Kwon, Ki Chang; Kim, Soo Young; Jang, Ho Won; Kim, Jong Kyu

2016-01-01

A highly efficient circularly-polarized-light detector with excellent wavelength selectivity is demonstrated with an elegant and simple microelectronics-compatible way. The circularly-polarized-light detector based on a proper combination of the geometry-controlled TiO2-SnO2 hetero-chiral thin film as an effective chiroptical filter and the Si active layer shows excellent chiroptical response with external quantum efficiency as high as 30% and high helicity selectivity of ~15.8% in an intended wavelength range. Furthermore, we demonstrated the ability of manipulating both bandwidth and responsivity of the detector simultaneously in whole visible wavelength range by a precise control over the geometry and materials constituting hetero-chiral thin film. The high efficiency, wavelength selectivity and compatibility with conventional microelectronics processes enabled by the proposed device can result in remarkable developments in highly integrated photonic platforms utilizing chiroptical responses. PMID:26795601

Highly photoresponsive and wavelength-selective circularly-polarized-light detector based on metal-oxides hetero-chiral thin film

NASA Astrophysics Data System (ADS)

Lee, Seung Hee; Singh, Dhruv Pratap; Sung, Ji Ho; Jo, Moon-Ho; Kwon, Ki Chang; Kim, Soo Young; Jang, Ho Won; Kim, Jong Kyu

2016-01-01

A highly efficient circularly-polarized-light detector with excellent wavelength selectivity is demonstrated with an elegant and simple microelectronics-compatible way. The circularly-polarized-light detector based on a proper combination of the geometry-controlled TiO2-SnO2 hetero-chiral thin film as an effective chiroptical filter and the Si active layer shows excellent chiroptical response with external quantum efficiency as high as 30% and high helicity selectivity of ~15.8% in an intended wavelength range. Furthermore, we demonstrated the ability of manipulating both bandwidth and responsivity of the detector simultaneously in whole visible wavelength range by a precise control over the geometry and materials constituting hetero-chiral thin film. The high efficiency, wavelength selectivity and compatibility with conventional microelectronics processes enabled by the proposed device can result in remarkable developments in highly integrated photonic platforms utilizing chiroptical responses.

Investigations of nanodimensional Al{sup 2}O{sup 3} films deposited by ion-plasma sputtering onto porous silicon

DOE Office of Scientific and Technical Information (OSTI.GOV)

Seredin, P. V., E-mail: paul@phys.vsu.ru; Lenshin, A. S.; Goloshchapov, D. L.

2015-07-15

The purpose of this study is the deposition of nanodimensional Al{sup 2}O{sup 3} films on the surface of nanoporous silicon and also fundamental investigations of the structural, optical, and morphological properties of these materials. Analyzing the results obtained here, it is possible to state that ultrathin nanostructured Al{sup 2}O{sup 3} films can be obtained in the form of threads oriented in one direction and located at a distance of 300–500 nm from each other using ion-plasma sputtering on a layer of porous silicon. Such a mechanism of aluminum-oxide growth is conditioned by the crystallographic orientation of the initial single-crystalline siliconmore » wafer used to fabricate the porous layer. The results of optical spectroscopy show that the Al{sup 2}O{sup 3}/por-Si/Si(111) heterophase structure perfectly transmits electromagnetic radiation in the range of 190–900 nm. The maximum in the dispersion of the refractive index obtained for the Al{sup 2}O{sup 3} film grown on por-Si coincides with the optical-absorption edge for aluminum oxide and is located in the region of ∼5.60 eV. This fact is confirmed by the results of calculations of the optical-absorption spectrum of the Al{sup 2}O{sup 3}/por-Si/Si(lll) heterophase structure. The Al{sup 2}O{sup 3} films formed on the heterophase-structure surface in the form of nanodimensional structured threads can serve as channels of optical conduction and can be rather efficiently introduced into conventional technologies, which are of great importance in microelectronics and optoelectronics.« less

Towards co-packaging of photonics and microelectronics in existing manufacturing facilities

NASA Astrophysics Data System (ADS)

Janta-Polczynski, Alexander; Cyr, Elaine; Bougie, Jerome; Drouin, Alain; Langlois, Richard; Childers, Darrell; Takenobu, Shotaro; Taira, Yoichi; Lichoulas, Ted W.; Kamlapurkar, Swetha; Engelmann, Sebastian; Fortier, Paul; Boyer, Nicolas; Barwicz, Tymon

2018-02-01

The impact of integrated photonics on optical interconnects is currently muted by challenges in photonic packaging and in the dense integration of photonic modules with microelectronic components on printed circuit boards. Single mode optics requires tight alignment tolerance for optical coupling and maintaining this alignment in a cost-efficient package can be challenging during thermal excursions arising from downstream microelectronic assembly processes. In addition, the form factor of typical fiber connectors is incompatible with the dense module integration expected on printed circuit boards. We have implemented novel approaches to interfacing photonic chips to standard optical fibers. These leverage standard high throughput microelectronic assembly tooling and self-alignment techniques resulting in photonic packaging that is scalable in manufacturing volume and in the number of optical IOs per chip. In addition, using dense optical fiber connectors with space-efficient latching of fiber patch cables results in compact module size and efficient board integration, bringing the optics closer to the logic chip to alleviate bandwidth bottlenecks. This packaging direction is also well suited for embedding optics in multi-chip modules, including both photonic and microelectronic chips. We discuss the challenges and rewards in this type of configuration such as thermal management and signal integrity.

Physical Limitations in Lithography for Microelectronics.

ERIC Educational Resources Information Center

Flavin, P. G.

1981-01-01

Describes techniques being used in the production of microelectronics kits which have replaced traditional optical lithography, including contact and optical projection printing, and X-ray and electron beam lithography. Also includes limitations of each technique described. (SK)

Investigation of electronic structures and optical properties of β -Si3N4 doped with IV A elements: A first-principles simulation

NASA Astrophysics Data System (ADS)

Lu, Xuefeng; Gao, Xu; Ren, Junqiang; Li, Cuixia; Guo, Xin; Wei, Yupeng; La, Peiqing

2018-04-01

Based on first-principles simulations with the generalized gradient approximation (GGA) of the Perdew-Burke-Ernzerhof (PBE) functional, we studied the electronic structures and optical properties of hexagonal silicon nitride (β-Si3N4) doped with IV A elements, C, Ge, Sn and Pb. It was found that the Ge-doped system is characterized by a more stable structure with a lower formation energy of 2.584 eV compared with those of the C-, Sn- and Pb-doped systems of 3.877 eV, 5.249 eV and 7.672 eV, respectively. The band gap (EG) of the Pb-doped system was the lowest at 1.6 eV, displaying semiconducting characteristics. Additionally, there was a transition from a direct band gap to an indirect band gap in the C-doped system. Charge difference density analysis showed that the covalent property of the C-N bonds was enhanced by expansion of the electron-free region and the larger Mulliken population values of 0.71 and 0.86. Furthermore, lower absorption and reflectivity peaks at 11.30 eV were observed for the C-doped system, demonstrating its broader potential for application in photoelectric and microelectronic devices.

One-dimensional Si/Ge nanowires and their heterostructures for multifunctional applications—a review

NASA Astrophysics Data System (ADS)

Ray, Samit K.; Katiyar, Ajit K.; Raychaudhuri, Arup K.

2017-03-01

Remarkable progress has been made in the field of one-dimensional semiconductor nanostructures for electronic and photonic devices. Group-IV semiconductors and their heterostructures have dominated the years of success in microelectronic industry. However their use in photonic devices is limited since they exhibit poor optical activity due to indirect band gap nature of Si and Ge. Reducing their dimensions below a characteristic length scale of various fundamental parameters like exciton Bohr radius, phonon mean free path, critical size of magnetic domains, exciton diffusion length etc result in the significant modification of bulk properties. In particular, light emission from Si/Ge nanowires due to quantum confinement, strain induced band structure modification and impurity doping may lead to the integration of photonic components with mature silicon CMOS technology in near future. Several promising applications based on Si and Ge nanowires have already been well established and studied, while others are now at the early demonstration stage. The control over various forms of energy and carrier transport through the unconstrained dimension makes Si and Ge nanowires a promising platform to manufacture advanced solid-state devices. This review presents the progress of the research with emphasis on their potential application of Si/Ge nanowires and their heterostructures for electronic, photonic, sensing and energy devices.

Technology modules from micro- and nano-electronics for the life sciences.

PubMed

Birkholz, M; Mai, A; Wenger, C; Meliani, C; Scholz, R

2016-05-01

The capabilities of modern semiconductor manufacturing offer remarkable possibilities to be applied in life science research as well as for its commercialization. In this review, the technology modules available in micro- and nano-electronics are exemplarily presented for the case of 250 and 130 nm technology nodes. Preparation procedures and the different transistor types as available in complementary metal-oxide-silicon devices (CMOS) and BipolarCMOS (BiCMOS) technologies are introduced as key elements of comprehensive chip architectures. Techniques for circuit design and the elements of completely integrated bioelectronics systems are outlined. The possibility for life scientists to make use of these technology modules for their research and development projects via so-called multi-project wafer services is emphasized. Various examples from diverse fields such as (1) immobilization of biomolecules and cells on semiconductor surfaces, (2) biosensors operating by different principles such as affinity viscosimetry, impedance spectroscopy, and dielectrophoresis, (3) complete systems for human body implants and monitors for bioreactors, and (4) the combination of microelectronics with microfluidics either by chip-in-polymer integration as well as Si-based microfluidics are demonstrated from joint developments with partners from biotechnology and medicine. WIREs Nanomed Nanobiotechnol 2016, 8:355-377. doi: 10.1002/wnan.1367 For further resources related to this article, please visit the WIREs website. © 2015 Wiley Periodicals, Inc.

Methodology of problem-based learning engineering and technology and of its implementation with modern computer resources

NASA Astrophysics Data System (ADS)

Lebedev, A. A.; Ivanova, E. G.; Komleva, V. A.; Klokov, N. M.; Komlev, A. A.

2017-01-01

The considered method of learning the basics of microelectronic circuits and systems amplifier enables one to understand electrical processes deeper, to understand the relationship between static and dynamic characteristics and, finally, bring the learning process to the cognitive process. The scheme of problem-based learning can be represented by the following sequence of procedures: the contradiction is perceived and revealed; the cognitive motivation is provided by creating a problematic situation (the mental state of the student), moving the desire to solve the problem, to raise the question "why?", the hypothesis is made; searches for solutions are implemented; the answer is looked for. Due to the complexity of architectural schemes in the work the modern methods of computer analysis and synthesis are considered in the work. Examples of engineering by students in the framework of students' scientific and research work of analog circuits with improved performance based on standard software and software developed at the Department of Microelectronics MEPhI.

Solar Variability and the Near-Earth Environment: Mining Enhanced Low Dose Rate Sensitivity Data From the Microelectronics and Photonics Test Bed Space Experiment

NASA Technical Reports Server (NTRS)

Turflinger, T.; Schmeichel, W.; Krieg, J.; Titus, J.; Campbell, A.; Reeves, M.; Marshall (P.); Hardage, Donna (Technical Monitor)

2004-01-01

This effort is a detailed analysis of existing microelectronics and photonics test bed satellite data from one experiment, the bipolar test board, looking to improve our understanding of the enhanced low dose rate sensitivity (ELDRS) phenomenon. Over the past several years, extensive total dose irradiations of bipolar devices have demonstrated that many of these devices exhibited ELDRS. In sensitive bipolar transistors, ELDRS produced enhanced degradation of base current, resulting in enhanced gain degradation at dose rates <0.1 rd(Si)/s compared to similar transistors irradiated at dose rates >1 rd(Si)/s. This Technical Publication provides updated information about the test devices, the in-flight experiment, and both flight-and ground-based observations. Flight data are presented for the past 5 yr of the mission. These data are compared to ground-based data taken on devices from the same date code lots. Information about temperature fluctuations, power shutdowns, and other variables encountered during the space flight are documented.

Spoked-ring microcavities: enabling seamless integration of nanophotonics in unmodified advanced CMOS microelectronics chips

NASA Astrophysics Data System (ADS)

Wade, Mark T.; Shainline, Jeffrey M.; Orcutt, Jason S.; Ram, Rajeev J.; Stojanovic, Vladimir; Popovic, Milos A.

2014-03-01

We present the spoked-ring microcavity, a nanophotonic building block enabling energy-efficient, active photonics in unmodified, advanced CMOS microelectronics processes. The cavity is realized in the IBM 45nm SOI CMOS process - the same process used to make many commercially available microprocessors including the IBM Power7 and Sony Playstation 3 processors. In advanced SOI CMOS processes, no partial etch steps and no vertical junctions are available, which limits the types of optical cavities that can be used for active nanophotonics. To enable efficient active devices with no process modifications, we designed a novel spoked-ring microcavity which is fully compatible with the constraints of the process. As a modulator, the device leverages the sub-100nm lithography resolution of the process to create radially extending p-n junctions, providing high optical fill factor depletion-mode modulation and thereby eliminating the need for a vertical junction. The device is made entirely in the transistor active layer, low-loss crystalline silicon, which eliminates the need for a partial etch commonly used to create ridge cavities. In this work, we present the full optical and electrical design of the cavity including rigorous mode solver and FDTD simulations to design the Qlimiting electrical contacts and the coupling/excitation. We address the layout of active photonics within the mask set of a standard advanced CMOS process and show that high-performance photonic devices can be seamlessly monolithically integrated alongside electronics on the same chip. The present designs enable monolithically integrated optoelectronic transceivers on a single advanced CMOS chip, without requiring any process changes, enabling the penetration of photonics into the microprocessor.

Design, processing and testing of LSI arrays, hybrid microelectronics task

NASA Technical Reports Server (NTRS)

Himmel, R. P.; Stuhlbarg, S. M.; Ravetti, R. G.; Zulueta, P. J.; Rothrock, C. W.

1979-01-01

Mathematical cost models previously developed for hybrid microelectronic subsystems were refined and expanded. Rework terms related to substrate fabrication, nonrecurring developmental and manufacturing operations, and prototype production are included. Sample computer programs were written to demonstrate hybrid microelectric applications of these cost models. Computer programs were generated to calculate and analyze values for the total microelectronics costs. Large scale integrated (LST) chips utilizing tape chip carrier technology were studied. The feasibility of interconnecting arrays of LSU chips utilizing tape chip carrier and semiautomatic wire bonding technology was demonstrated.

2-dimensional ion velocity distributions measured by laser-induced fluorescence above a radio-frequency biased silicon wafer

NASA Astrophysics Data System (ADS)

Moore, Nathaniel B.; Gekelman, Walter; Pribyl, Patrick; Zhang, Yiting; Kushner, Mark J.

2013-08-01

The dynamics of ions traversing sheaths in low temperature plasmas are important to the formation of the ion energy distribution incident onto surfaces during microelectronics fabrication. Ion dynamics have been measured using laser-induced fluorescence (LIF) in the sheath above a 30 cm diameter, 2.2 MHz-biased silicon wafer in a commercial inductively coupled plasma processing reactor. The velocity distribution of argon ions was measured at thousands of positions above and radially along the surface of the wafer by utilizing a planar laser sheet from a pulsed, tunable dye laser. Velocities were measured both parallel and perpendicular to the wafer over an energy range of 0.4-600 eV. The resulting fluorescence was recorded using a fast CCD camera, which provided resolution of 0.4 mm in space and 30 ns in time. Data were taken at eight different phases during the 2.2 MHz cycle. The ion velocity distributions (IVDs) in the sheath were found to be spatially non-uniform near the edge of the wafer and phase-dependent as a function of height. Several cm above the wafer the IVD is Maxwellian and independent of phase. Experimental results were compared with simulations. The experimental time-averaged ion energy distribution function as a function of height compare favorably with results from the computer model.

Fluorinated graphene dielectric films obtained from functionalized graphene suspension: preparation and properties.

PubMed

Nebogatikova, N A; Antonova, I V; Prinz, V Ya; Kurkina, I I; Vdovin, V I; Aleksandrov, G N; Timofeev, V B; Smagulova, S A; Zakirov, E R; Kesler, V G

2015-05-28

In the present study, we have examined the interaction between a suspension of graphene in dimethylformamide and an aqueous solution of hydrofluoric acid, which was found to result in partial fluorination of suspension flakes. A considerable decrease in the thickness and lateral size of the graphene flakes (up to 1-5 monolayers in thickness and 100-300 nm in diameter) with increasing duration of fluorination treatment is found to be accompanied by a simultaneous transition of the flakes from the conducting to the insulating state. Smooth and uniform insulating films with a roughness of ∼2 nm and thicknesses down to 20 nm were deposited from the suspension on silicon. The electrical and structural properties of the films suggest their use as insulating elements in thin-film nano- and microelectronic device structures. In particular, it was found that the films prepared from the fluorinated suspension display rather high breakdown voltages (field strength of (1-3) × 10(6) V cm(-1)), ultralow densities of charges in the film and at the interface with the silicon substrate in metal-insulator-semiconductor structures (∼(1-5) × 10(10) cm(-2)). Such excellent characteristics of the dielectric film can be compared only to well-developed SiO2 layers. The films from the fluorinated suspension are cheap, practically feasible and easy to produce.

Macro-meso-microsystems integration in LTCC : LDRD report.

DOE Office of Scientific and Technical Information (OSTI.GOV)

De Smet, Dennis J.; Nordquist, Christopher Daniel; Turner, Timothy Shawn

2007-03-01

Low Temperature Cofired Ceramic (LTCC) has proven to be an enabling medium for microsystem technologies, because of its desirable electrical, physical, and chemical properties coupled with its capability for rapid prototyping and scalable manufacturing of components. LTCC is viewed as an extension of hybrid microcircuits, and in that function it enables development, testing, and deployment of silicon microsystems. However, its versatility has allowed it to succeed as a microsystem medium in its own right, with applications in non-microelectronic meso-scale devices and in a range of sensor devices. Applications include silicon microfluidic ''chip-and-wire'' systems and fluid grid array (FGA)/microfluidic multichip modulesmore » using embedded channels in LTCC, and cofired electro-mechanical systems with moving parts. Both the microfluidic and mechanical system applications are enabled by sacrificial volume materials (SVM), which serve to create and maintain cavities and separation gaps during the lamination and cofiring process. SVMs consisting of thermally fugitive or partially inert materials are easily incorporated. Recognizing the premium on devices that are cofired rather than assembled, we report on functional-as-released and functional-as-fired moving parts. Additional applications for cofired transparent windows, some as small as an optical fiber, are also described. The applications described help pave the way for widespread application of LTCC to biomedical, control, analysis, characterization, and radio frequency (RF) functions for macro-meso-microsystems.« less

Geckoprinting: assembly of microelectronic devices on unconventional surfaces by transfer printing with isolated gecko setal arrays

PubMed Central

Jeong, Jaeyoung; Kim, Juho; Song, Kwangsun; Autumn, Kellar; Lee, Jongho

2014-01-01

Developing electronics in unconventional forms provides opportunities to expand the use of electronics in diverse applications including bio-integrated or implanted electronics. One of the key challenges lies in integrating semiconductor microdevices onto unconventional substrates without glue, high pressure or temperature that may cause damage to microdevices, substrates or interfaces. This paper describes a solution based on natural gecko setal arrays that switch adhesion mechanically on and off, enabling pick and place manipulation of thin microscale semiconductor materials onto diverse surfaces including plants and insects whose surfaces are usually rough and irregular. A demonstration of functional ‘geckoprinted’ microelectronic devices provides a proof of concept of our results in practical applications. PMID:25056216

Evidence for adverse reproductive outcomes among women microelectronic assembly workers.

PubMed Central

Huel, G; Mergler, D; Bowler, R

1990-01-01

Microelectronics assembly entails complex processes where several potentially fetotoxic chemical compounds are used extensively. This study was undertaken to assess the potential adverse reproductive outcomes among former women workers in a microelectronics assembly plant in New Mexico with respect to a comparable population from the same geographical region and to examine the relation between these outcomes and employment history in this plant. After matching a pool of 143 former microelectronic female workers and 105 referents, 90 former microelectronic female worker-referent pairs were constituted (representing 302 and 324 pregnancies in former workers and referents respectively). The odds ratio (for pair matching design) of spontaneous abortion among women workers, before beginning to assemble microelectronic components, was 0.9 (chi 2 = 0.04; NS). After the beginning of employment this odds ratio became 5.6 (chi 2 = 9.8; p less than 1%). This estimated odds ratio decreased to 4.0, taking into account the increased risk for spontaneous abortion in previous pregnancies before employment (chi 2 = 5.4; p less than 5%). It was not possible to determine if this effect was reversible owing to the small number of pairs available after employment. The findings of this study corroborate the results of former studies that suggest a potential association between electronic manufacturing activity and risk of spontaneous abortion. Although the organic solvents were suspected of being the potential risk factor, this study was inconclusive from this point of view. Nevertheless, these investigations may provide some insight into reproductive outcomes among female workers exposed to solvents. PMID:2378817

Center for Space Microelectronics Technology 1988-1989 technical report

NASA Technical Reports Server (NTRS)

Olsen, Peggy

1990-01-01

The 1988 to 1989 Technical Report of the JPL Center for Space Microelectronics Technology summarizes the technical accomplishments, publications, presentations, and patents of the center. Listed are 321 publications, 282 presentations, and 140 new technology reports and patents.

Center for Space Microelectronics Technology

NASA Technical Reports Server (NTRS)

1991-01-01

The 1990 technical report of the Jet Propulsion Laboratory Center for Space Microelectronics Technology summarizes the technical accomplishments, publications, presentations, and patents of the center during 1990. The report lists 130 publications, 226 presentations, and 87 new technology reports and patents.

Growth and optical properties of CMOS-compatible silicon nanowires for photonic devices

NASA Astrophysics Data System (ADS)

Guichard, Alex Richard

Silicon (Si) is the dominant semiconductor material in both the microelectronic and photovoltaic industries. Despite its poor optical properties, Si is simply too abundant and useful to be completely abandoned in either industry. Since the initial discovery of efficient room temperature photoluminescence (PL) from porous Si and the following discoveries of PL and time-resolved optical gain from Si nanocrystals (Si-nc) in SiO2, many groups have studied the feasibility of making Si-based, CMOS-compatible electroluminescent devices and electrically pumped lasers. These studies have shown that for Si-ne sizes below about 10 nm, PL can be attributed to radiative recombination of confined excitons and quantum efficiencies can reach 90%. PL peak energies are blue-shifted from the bulk Si band edge of 1.1 eV due to the quantum confinement effect and PL decay lifetimes are on mus timescales. However, many unanswered questions still exist about both the ease of carrier injection and various non-radiative and loss mechanisms that are present. A potential alternative material system to porous Si and Si-nc is Si nanowires (SiNWs). In this thesis, I examine the optical properties of SiNWs with diameters in the range of 3-30 nm fabricated by a number of compound metal oxide semiconductor (CMOS) compatible fabrication techniques including Chemical Vapor Deposition on metal nanoparticle coated substrates, catalytic wet etching of bulk Si and top-down electron-beam lithographic patterning. Using thermal oxidation and etching, we can increase the degree of confinement in the SiNWs. I demonstrate PL peaked in the visible and near-infrared (NIR) wavelength ranges that is tunable by controlling the crystalline SiNW core diameter, which is measured with dark field and high-resolution transmission electron microscopy. PL decay lifetimes of the SiNWs are on the order of 50 mus after proper surface passivation, which suggest that the PL is indeed from confined carriers in the SiNW cores. Investigation of the non-radiative Auger recombination (AR) process suggests that for high carrier densities in excess of 1019 cm-3, the AR lifetime is about 80 ns and decreases with increasing carrier density. This SiNW AR lifetime is slower than the AR process in Si nanocrystals at similar carrier densities, but faster than the radiative process. I also study the light emission and absorption properties of single SiNWs patterned on Silicon-on-insulator (SOI) substrates and find that a large fraction of NWs is optically dead. Moreover, the active, light-emitting nanostructures exhibit PL blinking, a mechanism often seen for individual nanostructure light emitters. These results are essential to evaluating Si nanostructures as a feasible gain or lasing medium. A second potential application for SiNWs is as a building block for low-cost, Si-based photovoltaics (PV). The market for thin-film PV, particularly organic thin-film PV, exists because it offers potential lower cost solutions for solar power versus bulk Si-based PV. However, many thin film technologies, while possessing superior optical absorption properties compared to Si, suffer from poor electronic transport properties. Here, I present a new Si-based PV design that combines the desirable optical properties of highly absorptive organic molecules and the high-mobility electronic properties of crystalline Si. This synergy is achieved by exploiting efficient Forster energy transfer from the light absorbing organic to SiNWs that enable current extraction. The energy transfer radius of a particular dye and bulk Si is found to be roughly 4 nm. Spectroscopic photocurrent experiments were performed on unpatterned SOI wafers as well as SiNWs patterned in SOI substrates and a significant photocurrent increase was seen in samples coated with organics versus uncoated samples. The photocurrent increase is seen in the wavelength range of the dye's absorption band, suggesting absorption of the dye and subsequent energy transfer to the Si plays a role. These results could pave the way for new low-cost, Si-based solar cell designs that leverage the strengths of the Si PV and microelectronics industries.

Center for Space Microelectronics Technology

NASA Technical Reports Server (NTRS)

1992-01-01

The 1991 Technical Report of the Jet Propulsion Laboratory Center for Space Microelectronics Technology summarizes the technical accomplishments, publications, presentations, and patents of the Center during the past year. The report lists 193 publications, 211 presentations, and 125 new technology reports and patents.

Towards tunable and multifunctional interfaces: Multicomponent amorphous alloys and bilayer stacks

NASA Astrophysics Data System (ADS)

Kast, Matthew G.

Controlling the electronic structure and requisite charge transfer at and across interfaces is a grand challenge of materials science. Despite decades of research and numerous successes in the fields microelectronics and photovoltaics much work remains to be done. In many applications, whether they be in microelectronics, photovoltaics or display technology there is a demand for multiple functions at a single interface. Historically, existent materials were either discarded as an option due to known properties or tested with some application based figure of merit in mind. Following this, the quality of the material and/or the preparation of the surface/interface to which the material would be deposited was optimized. As the microelectronics and photovoltaics industries have matured, continued progress (faster, lower power transistors and more efficient, cheaper, abundant solar cells) will require new materials (possibly not previously existent) that are fundamentally better for their application than their highly optimized existent counter parts. The manifestation of this has been seen in the microelectronics field with introduction of hafnium silicates to replace silica (which had previously been monumentally successful) as the gate dielectrics for the most advanced transistors. Continued progress in efficient, cheap, abundant photovoltaics will require similar advances. Advances will be needed in the area of new abundant absorbers that can be deposited cheaply which result in materials with high efficiencies. In addition, selective contacts capable of extracting charge from efficient absorbers with low ohmic losses and low recombination rates will be needed. Presented here are two approaches to the multifunctional interface problem, first the use of amorphous alloys that open up the accessible composition space of thin films significantly and second the use of bilayers that loosen the requirements of a single film at an interface.

Charge collection and SEU mechanisms

NASA Astrophysics Data System (ADS)

Musseau, O.

1994-01-01

In the interaction of cosmic ions with microelectronic devices a dense electron-hole plasma is created along the ion track. Carriers are separated and transported by the electric field and under the action of the concentration gradient. The subsequent collection of these carriers induces a transient current at some electrical node of the device. This "ionocurrent" (single ion induced current) acts as any electrical perturbation in the device, propagating in the circuit and inducing failures. In bistable systems (registers, memories) the stored data can be upset. In clocked devices (microprocessors) the parasitic perturbation may propagate through the device to the outputs. This type of failure only effects the information, and do not degrade the functionally of the device. The purpose of this paper is to review the mechanisms of single event upset in microelectronic devices. Experimental and theoretical results are presented, and actual questions and problems are discussed. A brief introduction recalls the creation of the dense plasma of electron-hole pairs. The basic processes for charge collection in a simple np junction (drift and diffusion) are presented. The funneling-field effect is discussed and experimental results are compared to numerical simulations and semi-empirical models. Charge collection in actual microelectronic structures is then presented. Due to the parasitic elements, coupling effects are observed. Geometrical effects, in densely packed structures, results in multiple errors. Electronic couplings are due to the carriers in excess, acting as minority carriers, that trigger parasitic bipolar transistors. Single event upset of memory cells is discussed, based on numerical and experimental data. The main parameters for device characterization are presented. From the physical interpretation of charge collection mechanisms, the intrinsic sensitivity of various microelectronic technologies is determined and compared to experimental data. Scaling laws and future trends are finally discussed.

Science and Technological Innovation.

ERIC Educational Resources Information Center

Braun, Ernest

1979-01-01

This article is based on a presentation at the 1979 conference of the Education Group of The Institute of Physics which was held in Cambridge, England. It discusses the interaction between science and technological innovation using a historical approach: the development of microelectronics. (HM)

Labour-Saving versus Work-Amplifying Effects of Micro-Electronics.

ERIC Educational Resources Information Center

Watanabe, Susumu

1986-01-01

This article argues that the labor-displacement effect of microelectronic machinery, especially numerically controlled machine tools and robots, has been exaggerated and that people tend to confuse the impact of intensified international competition with that of the new technology. (Author/CT)

Nano-Nucleation Characteristic of Cu-Ag Alloy Directly Electrodeposited on W Diffusion Barrier for Microelectronic Device Interconnect.

PubMed

Kim, Kang O; Kim, Sunjung

2016-05-01

Cu-Ag alloy interconnect is promising for ultra-large-scale integration (ULSI) microelectronic system of which device dimension keeps shrinking. In this study, seedless electrodeposition of Cu-Ag alloy directly on W diffusion barrier as interconnect technology is presented in respect of nano-nucleation control. Chemical equilibrium state of electrolyte was fundamentally investigated according to the pH of electrolyte because direct nano-nucleation of Cu-Ag alloy on W surface is challenging. Chelation behavior of Cu2+ and Ag+ ions with citrate (Cit) and ammonia ligands was dependent on the pH of electrolyte. The amount and kind of Cu- and Ag-based complexes determine the deposition rate, size, elemental composition, and surface morphology of Cu-Ag alloy nano-nuclei formed on W surface.

Enhanced Sensitivity of Gas Sensor Based on Poly(3-hexylthiophene) Thin-Film Transistors for Disease Diagnosis and Environment Monitoring

PubMed Central

Cavallari, Marco R.; Izquierdo, José E. E.; Braga, Guilherme S.; Dirani, Ely A. T.; Pereira-da-Silva, Marcelo A.; Rodríguez, Estrella F. G.; Fonseca, Fernando J.

2015-01-01

Electronic devices based on organic thin-film transistors (OTFT) have the potential to supply the demand for portable and low-cost gadgets, mainly as sensors for in situ disease diagnosis and environment monitoring. For that reason, poly(3-hexylthiophene) (P3HT) as the active layer in the widely-used bottom-gate/bottom-contact OTFT structure was deposited over highly-doped silicon substrates covered with thermally-grown oxide to detect vapor-phase compounds. A ten-fold organochloride and ammonia sensitivity compared to bare sensors corroborated the application of this semiconducting polymer in sensors. Furthermore, P3HT TFTs presented approximately three-order higher normalized sensitivity than any chemical sensor addressed herein. The results demonstrate that while TFTs respond linearly at the lowest concentration values herein, chemical sensors present such an operating regime mostly above 2000 ppm. Simultaneous alteration of charge carrier mobility and threshold voltage is responsible for pushing the detection limit down to units of ppm of ammonia, as well as tens of ppm of alcohol or ketones. Nevertheless, P3HT transistors and chemical sensors could compose an electronic nose operated at room temperature for a wide range concentration evaluation (1–10,000 ppm) of gaseous analytes. Targeted analytes include not only biomarkers for diseases, such as uremia, cirrhosis, lung cancer and diabetes, but also gases for environment monitoring in food, cosmetic and microelectronics industries. PMID:25912354

Active membrane masks for improved overlay performance in proximity lithography

NASA Astrophysics Data System (ADS)

Huston, Dryver R.; Plumpton, James; Esser, Brian; Sullivan, Gerald A.

2004-07-01

Membrane masks are thin (2 micron x 35 mm x 35 mm) structures that carry the master exposure patterns in proximity (X-ray) lithography. With the continuous drive to the printing of ever-finer features in microelectronics, the reduction of mask-wafer overlay positioning errors by passive rigid body positioning and passive stress control in the mask becomes impractical due to nano and sub-micron scale elastic deformations in the membrane mask. This paper describes the design, mechanics and performance of a system for actively stretching a membrane mask in-plane to control overlay distortion. The method uses thermoelectric heating/cooling elements placed on the mask perimeter. The thermoelectric elements cause controlled thermoelastic deformations in the supporting wafer, which in turn corrects distortions in the membrane mask. Silicon carbide masks are the focus of this study, but the method is believed to be applicable to other mask materials, such as diamond. Experimental and numerical results will be presented, as well as a discussion of the design issues and related design decisions.

Stabilization of Si_60 Cage Structure: The Agony and the Ecstasy

NASA Astrophysics Data System (ADS)

Kawazoe, Y.; Sun, Q.; Wang, Q.; Rao, B. K.; Jena, P.

2003-03-01

The unique role of silicon in the micro-electronics industry has motivated many researchers to find ways to stabilize Si_60 with fullerene structure. In spite of numerous experimental attempts, synthesis of a theoretically predicted C_60-supported Si_60 cluster (C_60@Si_60) has not been possible. Using a state-of-the-art theoretical method, we provide the first answer for this long-standing contradiction between the experimental observation and the theoretical prediction. The flaws in earlier theoretical works are pointed out, and Si_60 is shown to be unstable in the fullerene structure either on its own or when supported on a C_60 fullerene (C_60@Si_60). On the other hand, we show that Si_60 cage can be stabilized by using magic clusters such as Al_12X (X = Si, Ge, Sn, Pb) as endohedral units, which have been identified in recent experiment as stable clusters and as suitable building blocks for cluster-assembled materials.

Advanced imaging research and development at DARPA

NASA Astrophysics Data System (ADS)

Dhar, Nibir K.; Dat, Ravi

2012-06-01

Advances in imaging technology have huge impact on our daily lives. Innovations in optics, focal plane arrays (FPA), microelectronics and computation have revolutionized camera design. As a result, new approaches to camera design and low cost manufacturing is now possible. These advances are clearly evident in visible wavelength band due to pixel scaling, improvements in silicon material and CMOS technology. CMOS cameras are available in cell phones and many other consumer products. Advances in infrared imaging technology have been slow due to market volume and many technological barriers in detector materials, optics and fundamental limits imposed by the scaling laws of optics. There is of course much room for improvements in both, visible and infrared imaging technology. This paper highlights various technology development projects at DARPA to advance the imaging technology for both, visible and infrared. Challenges and potentials solutions are highlighted in areas related to wide field-of-view camera design, small pitch pixel, broadband and multiband detectors and focal plane arrays.

Rapid vapor deposition of highly conformal silica nanolaminates.

PubMed

Hausmann, Dennis; Becker, Jill; Wang, Shenglong; Gordon, Roy G

2002-10-11

Highly uniform and conformal coatings can be made by the alternating exposures of a surface to vapors of two reactants, in a process commonly called atomic layer deposition (ALD). The application of ALD has, however, been limited because of slow deposition rates, with a theoretical maximum of one monolayer per cycle. We show that alternating exposure of a surface to vapors of trimethylaluminum and tris(tert-butoxy)silanol deposits highly conformal layers of amorphous silicon dioxide and aluminum oxide nanolaminates at rates of 12 nanometers (more than 32 monolayers) per cycle. This process allows for the uniform lining or filling of long, narrow holes. We propose that these ALD layers grow by a previously unknown catalytic mechanism that also operates during the rapid ALD of many other metal silicates. This process should allow improved production of many devices, such as trench insulation between transistors in microelectronics, planar waveguides, microelectromechanical structures, multilayer optical filters, and protective layers against diffusion, oxidation, or corrosion.

Genetic design of enhanced valley splitting towards a spin qubit in silicon

PubMed Central

Zhang, Lijun; Luo, Jun-Wei; Saraiva, Andre; Koiller, Belita; Zunger, Alex

2013-01-01

The long spin coherence time and microelectronics compatibility of Si makes it an attractive material for realizing solid-state qubits. Unfortunately, the orbital (valley) degeneracy of the conduction band of bulk Si makes it difficult to isolate individual two-level spin-1/2 states, limiting their development. This degeneracy is lifted within Si quantum wells clad between Ge-Si alloy barrier layers, but the magnitude of the valley splittings achieved so far is small—of the order of 1 meV or less—degrading the fidelity of information stored within such a qubit. Here we combine an atomistic pseudopotential theory with a genetic search algorithm to optimize the structure of layered-Ge/Si-clad Si quantum wells to improve this splitting. We identify an optimal sequence of multiple Ge/Si barrier layers that more effectively isolates the electron ground state of a Si quantum well and increases the valley splitting by an order of magnitude, to ∼9 meV. PMID:24013452

Performance characteristics of nanocrystalline diamond vacuum field emission transistor array

NASA Astrophysics Data System (ADS)

Hsu, S. H.; Kang, W. P.; Davidson, J. L.; Huang, J. H.; Kerns, D. V.

2012-06-01

Nitrogen-incorporated nanocrystalline diamond (ND) vacuum field emission transistor (VFET) with self-aligned gate is fabricated by mold transfer microfabrication technique in conjunction with chemical vapor deposition (CVD) of nanocrystalline diamond on emitter cavity patterned on silicon-on-insulator (SOI) substrate. The fabricated ND-VFET demonstrates gate-controlled emission current with good signal amplification characteristics. The dc characteristics of the ND-VFET show well-defined cutoff, linear, and saturation regions with low gate turn-on voltage, high anode current, negligible gate intercepted current, and large dc voltage gain. The ac performance of the ND-VFET is measured, and the experimental data are analyzed using a modified small signal circuit model. The experimental results obtained for the ac voltage gain are found to agree with the theoretical model. A higher ac voltage gain is attainable by using a better test setup to eliminate the associated parasitic capacitances. The paper reveals the amplifier characteristics of the ND-VFET for potential applications in vacuum microelectronics.

Performance characteristics of nanocrystalline diamond vacuum field emission transistor array

NASA Astrophysics Data System (ADS)

Hsu, S. H.; Kang, W. P.; Davidson, J. L.; Huang, J. H.; Kerns, D. V.

2012-05-01

Nitrogen-incorporated nanocrystalline diamond (ND) vacuum field emission transistor (VFET) with self-aligned gate is fabricated by mold transfer microfabrication technique in conjunction with chemical vapor deposition (CVD) of nanocrystalline diamond on emitter cavity patterned on silicon-on-insulator (SOI) substrate. The fabricated ND-VFET demonstrates gate-controlled emission current with good signal amplification characteristics. The dc characteristics of the ND-VFET show well-defined cutoff, linear, and saturation regions with low gate turn-on voltage, high anode current, negligible gate intercepted current, and large dc voltage gain. The ac performance of the ND-VFET is measured, and the experimental data are analyzed using a modified small signal circuit model. The experimental results obtained for the ac voltage gain are found to agree with the theoretical model. A higher ac voltage gain is attainable by using a better test setup to eliminate the associated parasitic capacitances. The paper reveals the amplifier characteristics of the ND-VFET for potential applications in vacuum microelectronics.

Microelectronics and Computers in Medicine.

ERIC Educational Resources Information Center

Meindl, James D.

1982-01-01

The use of microelectronics and computers in medicine is reviewed, focusing on medical research; medical data collection, storage, retrieval, and manipulation; medical decision making; computed tomography; ultrasonic imaging; role in clinical laboratories; and use as adjuncts for diagnostic tests, monitors of critically-ill patients, and with the…

Comparative Advantages in Microelectronics,

DTIC Science & Technology

The initial point of departure for analyzing comparative advantages in microelectronics is to make certain explicit assumptions. First, technology...changes conditions but does not determine comparative advantages . Secondly, the entire industrial infrastructure is becoming increasingly abstract...that informatics will profoundly affect the productive infrastructure and the international division of labour.

76 FR 10395 - BreconRidge Manufacturing Solutions, Now Known as Sanmina-SCI Corporation, Division...

Federal Register 2010, 2011, 2012, 2013, 2014

2011-02-24

... Solutions, Now Known as Sanmina-SCI Corporation, Division Optoelectronic and Microelectronic Design and Manufacturing, a Subsidiary of Sanmina-SCI Corporation, Including On- Site Leased Workers From Kelly Services... Manufacturing Solutions, now known as Sanmina-SCI Corporation, Division Optoelectronic and Microelectronic...

High Technology and Job Loss.

ERIC Educational Resources Information Center

Rumberger, Russell

Job loss through technological advancement, particularly technologies based on microelectronics, is increasing for all economic sectors in a nation already hard challenged in world and domestic markets for goods and services. But assessing technology's employment impact remains difficult not only because of its direct and indirect effects and…

Direct on-chip DNA synthesis using electrochemically modified gold electrodes as solid support

NASA Astrophysics Data System (ADS)

Levrie, Karen; Jans, Karolien; Schepers, Guy; Vos, Rita; Van Dorpe, Pol; Lagae, Liesbet; Van Hoof, Chris; Van Aerschot, Arthur; Stakenborg, Tim

2018-04-01

DNA microarrays have propelled important advancements in the field of genomic research by enabling the monitoring of thousands of genes in parallel. The throughput can be increased even further by scaling down the microarray feature size. In this respect, microelectronics-based DNA arrays are promising as they can leverage semiconductor processing techniques with lithographic resolutions. We propose a method that enables the use of metal electrodes for de novo DNA synthesis without the need for an insulating support. By electrochemically functionalizing gold electrodes, these electrodes can act as solid support for phosphoramidite-based synthesis. The proposed method relies on the electrochemical reduction of diazonium salts, enabling site-specific incorporation of hydroxyl groups onto the metal electrodes. An automated DNA synthesizer was used to couple phosphoramidite moieties directly onto the OH-modified electrodes to obtain the desired oligonucleotide sequence. Characterization was done via cyclic voltammetry and fluorescence microscopy. Our results present a valuable proof-of-concept for the integration of solid-phase DNA synthesis with microelectronics.

Government Microelectronics Assessment for Trust (GOMAT)

NASA Technical Reports Server (NTRS)

Berg, Melanie D.; LaBel, Kenneth A.

2018-01-01

NASA Electronic Parts and Packaging (NEPP) is developing a process to be employed in critical applications. The framework assesses levels of trust and assurance in microelectronic systems. The process is being created with participation from a variety of organizations. We present a synopsis of the framework that includes contributions from The Aerospace Corporation.

Reparable, high-density microelectronic module provides effective heat sink

NASA Technical Reports Server (NTRS)

Carlson, K. J.; Maytone, F. F.

1967-01-01

Reparable modular system is used for packaging microelectronic flat packs and miniature discrete components. This three-dimensional compartmented structure incorporates etched phosphor bronze sheets and frames with etched wire conductors. It provides an effective heat sink for electric power dissipation in the absence of convective cooling means.

Managing the Manpower Aspects of Applying Micro-Electronics Technology.

ERIC Educational Resources Information Center

Thornton, P.; Routledge, C.

1980-01-01

Outlines major effects that the application of micro-electronics devices in products/processes and in office systems will have on future manpower and skill requirements in manufacturing organizations. Identifies the type of problems these changes will pose for manpower managers. Provides general guidelines for the successful management of these…

Teaching and Learning in a Microelectronic Age.

ERIC Educational Resources Information Center

Shane, Harold G.

General background information on microtechnologies with implications for educators provides an introduction to this review of past and current developments in microelectronics and specific ways in which the microchip is permeating society, creating problems and opportunities both in the workplace and the home. Topics discussed in the first of two…

Silicon Heat Pipe Array

NASA Technical Reports Server (NTRS)

Yee, Karl Y.; Ganapathi, Gani B.; Sunada, Eric T.; Bae, Youngsam; Miller, Jennifer R.; Beinsford, Daniel F.

2013-01-01

Improved methods of heat dissipation are required for modern, high-power density electronic systems. As increased functionality is progressively compacted into decreasing volumes, this need will be exacerbated. High-performance chip power is predicted to increase monotonically and rapidly with time. Systems utilizing these chips are currently reliant upon decades of old cooling technology. Heat pipes offer a solution to this problem. Heat pipes are passive, self-contained, two-phase heat dissipation devices. Heat conducted into the device through a wick structure converts the working fluid into a vapor, which then releases the heat via condensation after being transported away from the heat source. Heat pipes have high thermal conductivities, are inexpensive, and have been utilized in previous space missions. However, the cylindrical geometry of commercial heat pipes is a poor fit to the planar geometries of microelectronic assemblies, the copper that commercial heat pipes are typically constructed of is a poor CTE (coefficient of thermal expansion) match to the semiconductor die utilized in these assemblies, and the functionality and reliability of heat pipes in general is strongly dependent on the orientation of the assembly with respect to the gravity vector. What is needed is a planar, semiconductor-based heat pipe array that can be used for cooling of generic MCM (multichip module) assemblies that can also function in all orientations. Such a structure would not only have applications in the cooling of space electronics, but would have commercial applications as well (e.g. cooling of microprocessors and high-power laser diodes). This technology is an improvement over existing heat pipe designs due to the finer porosity of the wick, which enhances capillary pumping pressure, resulting in greater effective thermal conductivity and performance in any orientation with respect to the gravity vector. In addition, it is constructed of silicon, and thus is better suited for the cooling of semiconductor devices.

Ion-beam-induced bending of semiconductor nanowires.

PubMed

Hanif, Imran; Camara, Osmane; Tunes, Matheus A; Harrison, Robert W; Greaves, Graeme; Donnelly, Stephen E; Hinks, Jonathan A

2018-08-17

The miniaturisation of technology increasingly requires the development of both new structures as well as novel techniques for their manufacture and modification. Semiconductor nanowires (NWs) are a prime example of this and as such have been the subject of intense scientific research for applications ranging from microelectronics to nano-electromechanical devices. Ion irradiation has long been a key processing step for semiconductors and the natural extension of this technique to the modification of semiconductor NWs has led to the discovery of ion beam-induced deformation effects. In this work, transmission electron microscopy with in situ ion bombardment has been used to directly observe the evolution of individual silicon and germanium NWs under irradiation. Silicon NWs were irradiated with either 6 keV neon ions or xenon ions at 5, 7 or 9.5 keV with a flux of 3 × 10 13 ions cm -2 s -1 . Germanium NWs were irradiated with 30 or 70 keV xenon ions with a flux of 10 13 ions cm -2 s -1 . These new results are combined with those reported in the literature in a systematic analysis using a custom implementation of the transport of ions in matter Monte Carlo computer code to facilitate a direct comparison with experimental results taking into account the wide range of experimental conditions. Across the various studies this has revealed underlying trends and forms the basis of a critical review of the various mechanisms which have been proposed to explain the deformation of semiconductor NWs under ion irradiation.

Work and Programmable Automation.

ERIC Educational Resources Information Center

DeVore, Paul W.

A new industrial era based on electronics and the microprocessor has arrived, an era that is being called intelligent automation. Intelligent automation, in the form of robots, replaces workers, and the new products, using microelectronic devices, require significantly less labor to produce than the goods they replace. The microprocessor thus…

Printing of microstructure strain sensor for structural health monitoring

NASA Astrophysics Data System (ADS)

Le, Minh Quyen; Ganet, Florent; Audigier, David; Capsal, Jean-Fabien; Cottinet, Pierre-Jean

2017-05-01

Recent advances in microelectronics and materials should allow the development of integrated sensors with transduction properties compatible with being printed directly onto a 3D substrate, especially metallic and polymer substrates. Inorganic and organic electronic materials in microstructured and nanostructured forms, intimately integrated in ink, offer particularly attractive characteristics, with realistic pathways to sophisticated embodiments. Here, we report on these strategies and demonstrate the potential of 3D-printed microelectronics based on a structural health monitoring (SHM) application for the precision weapon systems. We show that our printed sensors can be employed in non-invasive, high-fidelity and continuous strain monitoring of handguns, making it possible to implement printed sensors on a 3D substrate in either SHM or remote diagnostics. We propose routes to commercialization and novel device opportunities and highlight the remaining challenges for research.

Application of analytical redundancy management to Shuttle crafts. [computerized simulation of microelectronic implementation

NASA Technical Reports Server (NTRS)

Montgomery, R. C.; Tabak, D.

1979-01-01

The study involves the bank of filters approach to analytical redundancy management since this is amenable to microelectronic implementation. Attention is given to a study of the UD factorized filter to determine if it gives more accurate estimates than the standard Kalman filter when data processing word size is reduced. It is reported that, as the word size is reduced, the effect of modeling error dominates the filter performance of the two filters. However, the UD filter is shown to maintain a slight advantage in tracking performance. It is concluded that because of the UD filter's stability in the serial processing mode, it remains the leading candidate for microelectronic implementation.

The Principle of the Micro-Electronic Neural Bridge and a Prototype System Design.

PubMed

Huang, Zong-Hao; Wang, Zhi-Gong; Lu, Xiao-Ying; Li, Wen-Yuan; Zhou, Yu-Xuan; Shen, Xiao-Yan; Zhao, Xin-Tai

2016-01-01

The micro-electronic neural bridge (MENB) aims to rebuild lost motor function of paralyzed humans by routing movement-related signals from the brain, around the damage part in the spinal cord, to the external effectors. This study focused on the prototype system design of the MENB, including the principle of the MENB, the neural signal detecting circuit and the functional electrical stimulation (FES) circuit design, and the spike detecting and sorting algorithm. In this study, we developed a novel improved amplitude threshold spike detecting method based on variable forward difference threshold for both training and bridging phase. The discrete wavelet transform (DWT), a new level feature coefficient selection method based on Lilliefors test, and the k-means clustering method based on Mahalanobis distance were used for spike sorting. A real-time online spike detecting and sorting algorithm based on DWT and Euclidean distance was also implemented for the bridging phase. Tested by the data sets available at Caltech, in the training phase, the average sensitivity, specificity, and clustering accuracies are 99.43%, 97.83%, and 95.45%, respectively. Validated by the three-fold cross-validation method, the average sensitivity, specificity, and classification accuracy are 99.43%, 97.70%, and 96.46%, respectively.

Advanced Silicon Photonic Device Architectures for Optical Communications: Proposals and Demonstrations

NASA Astrophysics Data System (ADS)

Sacher, Wesley David

Photonic integrated circuits implemented on silicon (Si) hold the potential for densely integrated electro-optic and passive devices manufactured by the high-volume fabrication and sophisticated assembly processes used for complementary metal-oxide-semiconductor (CMOS) electronics. However, high index contrast Si photonics has a number of functional limitations. In this thesis, several devices are proposed, designed, and experimentally demonstrated to overcome challenges in the areas of resonant modulation, waveguide loss, fiber-to-chip coupling, and polarization control. The devices were fabricated using foundry services at IBM and A*STAR Institute of Microelectronics (IME). First, we describe coupling modulated microrings, in which the coupler between a microring and the bus waveguide is modulated. The device circumvents the modulation bandwidth vs. resonator linewidth trade-off of conventional intracavity modulated microrings. We demonstrate a Si coupling modulated microring with a small-signal modulation response free of the parasitic resonator linewidth limitations at frequencies up to about 6x the linewidth. Comparisons of eye diagrams show that coupling modulation achieved data rates > 2x the rate attainable with intracavity modulation. Second, we demonstrate a silicon nitride (Si3N4)-on-Si photonic platform with independent Si3N4 and Si waveguides and taper transitions to couple light between the layers. The platform combines the excellent passive waveguide properties of Si3N4 and the compatibility of Si waveguides with electro-optic devices. Within the platform, we propose and demonstrate dual-level, Si3N 4-on-Si, fiber-to-chip grating couplers that simultaneously have wide bandwidths and high coupling efficiencies. Conventional Si and Si3N 4 grating couplers suffer from a trade-off between bandwidth and coupling efficiency. The dual-level grating coupler achieved a peak coupling efficiency of -1.3 dB and a 1-dB bandwidth of 80 nm, a record for the coupling efficiency-bandwidth product. Finally, we describe polarization rotator-splitters and controllers based on mode conversion between the fundamental transverse magnetic polarized mode and a high order transverse electric polarized mode in vertically asymmetric waveguides. We demonstrate the first polarization rotator-splitters and controllers that are fully compatible with standard active Si photonic platforms and extend the concept to our Si3N4-on-Si photonic platform.

Thickness Dependent Structural and Dielectric Properties of Calcium Copper Titanate Thin Films Produced by Spin-Coating Method for Microelectronic Devices

NASA Astrophysics Data System (ADS)

Thiruramanathan, P.; Sankar, S.; Marikani, A.; Madhavan, D.; Sharma, Sanjeev K.

2017-07-01

Calcium copper titanate (CaCu3Ti4O12, CCTO) thin films have been deposited on platinized silicon [(111)Pt/Ti/SiO2/Si] substrate through a sol-gel spin coating technique and annealed at 600-900°C with a variation of 100°C per sample for 3 h. The activation energy for crystalline growth, as well as optimal annealing temperature (900°C) of the CCTO crystallites was studied by x-ray diffraction analysis (XRD). Thickness dependent structural, morphological, and optical properties of CCTO thin films were observed. The field emission scanning electron microscopy (FE-SEM) verified that the CCTO thin films are uniform, fully covered, densely packed, and the particle size was found to be increased with film thickness. Meanwhile, quantitative analysis of dielectric properties (interfacial capacitance, dead layers, and bulk dielectric constant) of CCTO thin film with metal-insulator-metal (M-I-M) structures has been investigated systematically using a series capacitor model. Room temperature dielectric properties of all the samples exhibit dispersion at low frequencies, which can be explained based on Maxwell-Wagner two-layer models and Koop's theory. It was found that the 483 nm thick CCTO film represents a high dielectric constant ( ɛ r = 3334), low loss (tan δ = 3.54), capacitance ( C = 4951 nF), which might satisfy the requirements of embedded capacitor.

Development of bacteriophage-based bioluminescent bioreporters for monitoring of microbial pathogens

NASA Astrophysics Data System (ADS)

Ozen, Aysu; Montgomery, Kacey; Jegier, Pat; Patterson, Stacey; Daumer, Kathleen A.; Ripp, Steven A.; Garland, Jay L.; Sayler, Gary S.

2004-03-01

Microorganisms pose numerous problems when present in human occupied enclosed environments. Primary among these are health related hazards, manifested as infectious diseases related to contaminated drinking water, food, or air circulation systems or non-infectious allergy related complications associated with microbial metabolites (sick building syndrome). As a means towards rapid detection of microbial pathogens, we are attempting to harness the specificity of bacterial phage for their host with a modified quorum sensing amplification signal to produce quantifiable bioluminescent (lux) detection on a silicon microluminometer. The bacteriophage itself is metabolically inactive, only achieving replicative capabilities upon infection of its specific host bacterium. Bacteriophage bioluminescent bioreporters contain a genomically inserted luxI component. During an infection event, the phage genes and accompanying luxI construct are taken up by the host bacterium and transcribed, resulting in luxI expression and subsequent activation of a homoserine lactone inducible bioluminescent bioreporter. We constructed a vector carrying the luxI gene under the control of a strong E. coli promoter and cloned it into E. coli. We have shown that it can induce luminescence up to 14,000 counts per second when combined with the bioreporter strain. In their final embodiment, these sensors will be fully independent microelectronic monitors for microbial contamination, requiring only exposure of the biochip to the sample, with on-chip signal processing downloaded directly to the local area network of the environmental control system.

Designing a chevron unit for a microelectronic position-sensitive detector with two microchannel plates

NASA Astrophysics Data System (ADS)

Kosulya, A. V.; Verbitskii, V. G.

2017-09-01

The dependence of the transverse section of an electron beam on the distance between plates and on the accelerating potential difference is determined for a chevron unit of a microelectronic position-sensitive detector (MPSD) with two microchannel plates. The geometry of the MPSD chevron unit is designed and optimized.

Microelectronic Information Processing Systems: Computing Systems. Summary of Awards Fiscal Year 1994.

ERIC Educational Resources Information Center

National Science Foundation, Arlington, VA. Directorate for Computer and Information Science and Engineering.

The purpose of this summary of awards is to provide the scientific and engineering communities with a summary of the grants awarded in 1994 by the National Science Foundation's Division of Microelectronic Information Processing Systems. Similar areas of research are grouped together. Grantee institutions and principal investigators are identified…

Complex VLSI Feature Comparison for Commercial Microelectronics Verification

DTIC Science & Technology

2014-03-27

69 4.2.4 Circuit E . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 74 4.3 Summary...used for high-performance consumer microelectronics. Volume is a significant factor in constraining the technology limit for defense circuits, but it...surveyed in a 2010 Department of Commerce report found counterfeit chips difficult to identify due to improved fabrication quality in overseas counterfeit

Center for space microelectronics technology

NASA Technical Reports Server (NTRS)

1993-01-01

The 1992 Technical Report of the Jet Propulsion Laboratory Center for Space Microelectronics Technology summarizes the technical accomplishments, publications, presentations, and patents of the center during the past year. The report lists 187 publications, 253 presentations, and 111 new technology reports and patents in the areas of solid-state devices, photonics, advanced computing, and custom microcircuits.

The large scale microelectronics Computer-Aided Design and Test (CADAT) system

NASA Technical Reports Server (NTRS)

Gould, J. M.

1978-01-01

The CADAT system consists of a number of computer programs written in FORTRAN that provide the capability to simulate, lay out, analyze, and create the artwork for large scale microelectronics. The function of each software component of the system is described with references to specific documentation for each software component.

The Tao of Microelectronics

NASA Astrophysics Data System (ADS)

Zhang, Yumin

2014-12-01

Microelectronics is a challenging course to many undergraduate students and is often described as very messy. Before taking this course, all the students have learned circuit analysis, where basically all the problems can be solved by applying Kirchhoff's laws. In addition, most engineering students have also learned engineering mechanics: statics and dynamics, where Newton's laws and related principles can be applied in solving all the problems. However, microelectronics is not as clean as these courses. There are hundreds of equations for different circuits, and it is impossible to remember which equation should be applied to which circuit. One of the common pitfalls in learning this course is over-focusing at the equation level and ignoring the ideas (Tao) behind it. Unfortunately, these ideas are not summarized and emphasized in most microelectronics textbooks, though they cover various electronic circuits comprehensively. Therefore, most undergraduate students feel at a loss when they start to learn this topic. This book tries to illustrate the major ideas and the basic analysis techniques, so that students can derive the right equations easily when facing an electronic circuit.

Monitoring Composite Material Pressure Vessels with a Fiber-Optic/Microelectronic Sensor System

NASA Technical Reports Server (NTRS)

Klimcak, C.; Jaduszliwer, B.

1995-01-01

We discuss the concept of an integrated, fiber-optic/microelectronic distributed sensor system that can monitor composite material pressure vessels for Air Force space systems to provide assessments of the overall health and integrity of the vessel throughout its entire operating history from birth to end of life. The fiber optic component would include either a semiconductor light emitting diode or diode laser and a multiplexed fiber optic sensing network incorporating Bragg grating sensors capable of detecting internal temperature and strain. The microelectronic components include a power source, a pulsed laser driver, time domain data acquisition hardware, a microprocessor, a data storage device, and a communication interface. The sensing system would be incorporated within the composite during its manufacture. The microelectronic data acquisition and logging system would record the environmental conditions to which the vessel has been subjected to during its storage and transit, e.g., the history of thermal excursions, pressure loading data, the occurrence of mechanical impacts, the presence of changing internal strain due to aging, delamination, material decomposition, etc. Data would be maintained din non-volatile memory for subsequent readout through a microcomputer interface.

Canada in the 21st Century - Triumph or Tragedy? The Front Line.

ERIC Educational Resources Information Center

Kilgour, David

1996-01-01

Argues that new patterns of trade and production combined with an emphasis on a knowledge-based economy/society make it imperative that Canada upgrade its educational system. Specifically notes that several growing and dominant industries (microelectronics, biotechnology, telecommunications) require a high-tech skilled labor force. (MJP)

Laser Scanner Tests For Single-Event Upsets

NASA Technical Reports Server (NTRS)

Kim, Quiesup; Soli, George A.; Schwartz, Harvey R.

1992-01-01

Microelectronic advanced laser scanner (MEALS) is opto/electro/mechanical apparatus for nondestructive testing of integrated memory circuits, logic circuits, and other microelectronic devices. Multipurpose diagnostic system used to determine ultrafast time response, leakage, latchup, and electrical overstress. Used to simulate some of effects of heavy ions accelerated to high energies to determine susceptibility of digital device to single-event upsets.

Assessing Advanced High School and Undergraduate Students' Thinking Skills: The Chemistry--From the Nanoscale to Microelectronics Module

ERIC Educational Resources Information Center

Dori, Yehudit Judy; Dangur, Vered; Avargil, Shirly; Peskin, Uri

2014-01-01

Chemistry students in Israel have two options for studying chemistry: basic or honors (advanced placement). For instruction in high school honors chemistry courses, we developed a module focusing on abstract topics in quantum mechanics: Chemistry--From the Nanoscale to Microelectronics. The module adopts a visual-conceptual approach, which…

Microelectronics in F. E.: Some Personal Perceptions. An Occasional Paper.

ERIC Educational Resources Information Center

Dean, K. J.

The recent microelectronics developments are having, and will continue to have, a sharp impact on various industries in Great Britain, and thus on the capacity of the Further Education System to produce qualified graduates. To maintain a high quality of education, instructors must learn of these new developments and teach them to their vocational…

Reliability Considerations for Ultra- Low Power Space Applications

NASA Technical Reports Server (NTRS)

White, Mark; Johnston, Allan

2012-01-01

NASA, the aerospace community, and other high reliability (hi-rel) users of advanced microelectronic products face many challenges as technology continues to scale into the deep sub- micron region and ULP devices are sought after. Technology trends, ULP microelectronics, scaling and performance tradeoffs, reliability considerations, and spacecraft environments will be presented from a ULP perspective for space applications.

Sparsity-Based Super Resolution for SEM Images.

PubMed

Tsiper, Shahar; Dicker, Or; Kaizerman, Idan; Zohar, Zeev; Segev, Mordechai; Eldar, Yonina C

2017-09-13

The scanning electron microscope (SEM) is an electron microscope that produces an image of a sample by scanning it with a focused beam of electrons. The electrons interact with the atoms in the sample, which emit secondary electrons that contain information about the surface topography and composition. The sample is scanned by the electron beam point by point, until an image of the surface is formed. Since its invention in 1942, the capabilities of SEMs have become paramount in the discovery and understanding of the nanometer world, and today it is extensively used for both research and in industry. In principle, SEMs can achieve resolution better than one nanometer. However, for many applications, working at subnanometer resolution implies an exceedingly large number of scanning points. For exactly this reason, the SEM diagnostics of microelectronic chips is performed either at high resolution (HR) over a small area or at low resolution (LR) while capturing a larger portion of the chip. Here, we employ sparse coding and dictionary learning to algorithmically enhance low-resolution SEM images of microelectronic chips-up to the level of the HR images acquired by slow SEM scans, while considerably reducing the noise. Our methodology consists of two steps: an offline stage of learning a joint dictionary from a sequence of LR and HR images of the same region in the chip, followed by a fast-online super-resolution step where the resolution of a new LR image is enhanced. We provide several examples with typical chips used in the microelectronics industry, as well as a statistical study on arbitrary images with characteristic structural features. Conceptually, our method works well when the images have similar characteristics, as microelectronics chips do. This work demonstrates that employing sparsity concepts can greatly improve the performance of SEM, thereby considerably increasing the scanning throughput without compromising on analysis quality and resolution.

Sealed symmetric multilayered microelectronic device package with integral windows

DOEpatents

Peterson, Kenneth A.; Watson, Robert D.

2002-01-01

A sealed symmetric multilayered package with integral windows for housing one or more microelectronic devices. The devices can be a semiconductor chip, a CCD chip, a CMOS chip, a VCSEL chip, a laser diode, a MEMS device, or a IMEMS device. The multilayered package can be formed of a low-temperature cofired ceramic (LTCC) or high-temperature cofired ceramic (HTCC) multilayer processes with the windows being simultaneously joined (e.g. cofired) to the package body during LTCC or HTCC processing. The microelectronic devices can be flip-chip bonded and oriented so that the light-sensitive sides are optically accessible through the windows. The result is a compact, low-profile, sealed symmetric package, having integral windows that can be hermetically-sealed.

Antiferromagnetic CuMnAs multi-level memory cell with microelectronic compatibility

NASA Astrophysics Data System (ADS)

Olejník, K.; Schuler, V.; Marti, X.; Novák, V.; Kašpar, Z.; Wadley, P.; Campion, R. P.; Edmonds, K. W.; Gallagher, B. L.; Garces, J.; Baumgartner, M.; Gambardella, P.; Jungwirth, T.

2017-05-01

Antiferromagnets offer a unique combination of properties including the radiation and magnetic field hardness, the absence of stray magnetic fields, and the spin-dynamics frequency scale in terahertz. Recent experiments have demonstrated that relativistic spin-orbit torques can provide the means for an efficient electric control of antiferromagnetic moments. Here we show that elementary-shape memory cells fabricated from a single-layer antiferromagnet CuMnAs deposited on a III-V or Si substrate have deterministic multi-level switching characteristics. They allow for counting and recording thousands of input pulses and responding to pulses of lengths downscaled to hundreds of picoseconds. To demonstrate the compatibility with common microelectronic circuitry, we implemented the antiferromagnetic bit cell in a standard printed circuit board managed and powered at ambient conditions by a computer via a USB interface. Our results open a path towards specialized embedded memory-logic applications and ultra-fast components based on antiferromagnets.

Integrated microelectronics for smart textiles.

PubMed

Lauterbach, Christl; Glaser, Rupert; Savio, Domnic; Schnell, Markus; Weber, Werner

2005-01-01

The combination of textile fabrics with microelectronics will lead to completely new applications, thus achieving elements of ambient intelligence. The integration of sensor or actuator networks, using fabrics with conductive fibres as a textile motherboard enable the fabrication of large active areas. In this paper we describe an integration technology for the fabrication of a "smart textile" based on a wired peer-to-peer network of microcontrollers with integrated sensors or actuators. A self-organizing and fault-tolerant architecture is accomplished which detects the physical shape of the network. Routing paths are formed for data transmission, automatically circumventing defective or missing areas. The network architecture allows the smart textiles to be produced by reel-to-reel processes, cut into arbitrary shapes subsequently and implemented in systems at low installation costs. The possible applications are manifold, ranging from alarm systems to intelligent guidance systems, passenger recognition in car seats, air conditioning control in interior lining and smart wallpaper with software-defined light switches.

Wetting properties of Au/Sn solders for microelectronics

NASA Astrophysics Data System (ADS)

Peterson, K. A.; Williams, C. B.

Hermetic sealing of microelectronic packages with Au/Sn solder is critically dependent upon good wetting. In studying specific problems in hermetic sealing, a solderability test based on ASTM standard F-357-78 has proven useful. The test has helped isolate and quantify the effects of contamination due to epoxy die attach and related handling, thermal preconditioning of packages, gold plating thickness, time and temperature during sealing, and solder alloy composition as they affect wetting. Some differences in hardware have been documented between manufacturing lots, but the overriding factors have been contamination which occurs during packaging process flows and thermal preconditioning during processing. The paper includes a review of metallurgical aspects of soldering to a non-inert surface and an examination of microstructural differences in seal joints. The results also quantify the conventional wisdom that alloys which are on the tin-rich side of the eutectic composition offer superior wetting properties.

Single-chip microprocessor that communicates directly using light

NASA Astrophysics Data System (ADS)

Sun, Chen; Wade, Mark T.; Lee, Yunsup; Orcutt, Jason S.; Alloatti, Luca; Georgas, Michael S.; Waterman, Andrew S.; Shainline, Jeffrey M.; Avizienis, Rimas R.; Lin, Sen; Moss, Benjamin R.; Kumar, Rajesh; Pavanello, Fabio; Atabaki, Amir H.; Cook, Henry M.; Ou, Albert J.; Leu, Jonathan C.; Chen, Yu-Hsin; Asanović, Krste; Ram, Rajeev J.; Popović, Miloš A.; Stojanović, Vladimir M.

2015-12-01

Data transport across short electrical wires is limited by both bandwidth and power density, which creates a performance bottleneck for semiconductor microchips in modern computer systems—from mobile phones to large-scale data centres. These limitations can be overcome by using optical communications based on chip-scale electronic-photonic systems enabled by silicon-based nanophotonic devices8. However, combining electronics and photonics on the same chip has proved challenging, owing to microchip manufacturing conflicts between electronics and photonics. Consequently, current electronic-photonic chips are limited to niche manufacturing processes and include only a few optical devices alongside simple circuits. Here we report an electronic-photonic system on a single chip integrating over 70 million transistors and 850 photonic components that work together to provide logic, memory, and interconnect functions. This system is a realization of a microprocessor that uses on-chip photonic devices to directly communicate with other chips using light. To integrate electronics and photonics at the scale of a microprocessor chip, we adopt a ‘zero-change’ approach to the integration of photonics. Instead of developing a custom process to enable the fabrication of photonics, which would complicate or eliminate the possibility of integration with state-of-the-art transistors at large scale and at high yield, we design optical devices using a standard microelectronics foundry process that is used for modern microprocessors. This demonstration could represent the beginning of an era of chip-scale electronic-photonic systems with the potential to transform computing system architectures, enabling more powerful computers, from network infrastructure to data centres and supercomputers.

Single-chip microprocessor that communicates directly using light.

PubMed

Sun, Chen; Wade, Mark T; Lee, Yunsup; Orcutt, Jason S; Alloatti, Luca; Georgas, Michael S; Waterman, Andrew S; Shainline, Jeffrey M; Avizienis, Rimas R; Lin, Sen; Moss, Benjamin R; Kumar, Rajesh; Pavanello, Fabio; Atabaki, Amir H; Cook, Henry M; Ou, Albert J; Leu, Jonathan C; Chen, Yu-Hsin; Asanović, Krste; Ram, Rajeev J; Popović, Miloš A; Stojanović, Vladimir M

2015-12-24

Data transport across short electrical wires is limited by both bandwidth and power density, which creates a performance bottleneck for semiconductor microchips in modern computer systems--from mobile phones to large-scale data centres. These limitations can be overcome by using optical communications based on chip-scale electronic-photonic systems enabled by silicon-based nanophotonic devices. However, combining electronics and photonics on the same chip has proved challenging, owing to microchip manufacturing conflicts between electronics and photonics. Consequently, current electronic-photonic chips are limited to niche manufacturing processes and include only a few optical devices alongside simple circuits. Here we report an electronic-photonic system on a single chip integrating over 70 million transistors and 850 photonic components that work together to provide logic, memory, and interconnect functions. This system is a realization of a microprocessor that uses on-chip photonic devices to directly communicate with other chips using light. To integrate electronics and photonics at the scale of a microprocessor chip, we adopt a 'zero-change' approach to the integration of photonics. Instead of developing a custom process to enable the fabrication of photonics, which would complicate or eliminate the possibility of integration with state-of-the-art transistors at large scale and at high yield, we design optical devices using a standard microelectronics foundry process that is used for modern microprocessors. This demonstration could represent the beginning of an era of chip-scale electronic-photonic systems with the potential to transform computing system architectures, enabling more powerful computers, from network infrastructure to data centres and supercomputers.

Can zinc aluminate-titania composite be an alternative for alumina as microelectronic substrate?

PubMed Central

Roshni, Satheesh Babu; Sebastian, Mailadil Thomas; Surendran, Kuzhichalil Peethambharan

2017-01-01

Alumina, thanks to its superior thermal and dielectric properties, has been the leading substrate over several decades, for power and microelectronics circuits. However, alumina lacks thermal stability since its temperature coefficient of resonant frequency (τf) is far from zero (−60 ppmK−1). The present paper explores the potentiality of a ceramic composite 0.83ZnAl2O4-0.17TiO2 (in moles, abbreviated as ZAT) substrates for electronic applications over other commercially-used alumina-based substrates and synthesized using a non-aqueous tape casting method. The present substrate has τf of + 3.9 ppmK−1 and is a valuable addition to the group of thermo-stable substrates. The ZAT substrate shows a high thermal conductivity of 31.3 Wm−1K−1 (thermal conductivity of alumina is about 24.5 Wm−1K−1), along with promising mechanical, electrical and microwave dielectric properties comparable to that of alumina-based commercial substrates. Furthermore, the newly-developed substrate material shows exceptionally good thermal stability of dielectric constant, which cannot be met with any of the alumina-based HTCC substrates. PMID:28084459

Direct laser-patterned micro-supercapacitors from paintable MoS2 films.

PubMed

Cao, Liujun; Yang, Shubin; Gao, Wei; Liu, Zheng; Gong, Yongji; Ma, Lulu; Shi, Gang; Lei, Sidong; Zhang, Yunhuai; Zhang, Shengtao; Vajtai, Robert; Ajayan, Pulickel M

2013-09-09

Micrometer-sized electrochemical capacitors have recently attracted attention due to their possible applications in micro-electronic devices. Here, a new approach to large-scale fabrication of high-capacitance, two-dimensional MoS2 film-based micro-supercapacitors is demonstrated via simple and low-cost spray painting of MoS2 nanosheets on Si/SiO2 chip and subsequent laser patterning. The obtained micro-supercapacitors are well defined by ten interdigitated electrodes (five electrodes per polarity) with 4.5 mm length, 820 μm wide for each electrode, 200 μm spacing between two electrodes and the thickness of electrode is ∼0.45 μm. The optimum MoS2 -based micro-supercapacitor exhibits excellent electrochemical performance for energy storage with aqueous electrolytes, with a high area capacitance of 8 mF cm(-2) (volumetric capacitance of 178 F cm(-3) ) and excellent cyclic performance, superior to reported graphene-based micro-supercapacitors. This strategy could provide a good opportunity to develop various micro-/nanosized energy storage devices to satisfy the requirements of portable, flexible, and transparent micro-electronic devices. Copyright © 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Microelectronics (Electronic Devices) Research, Development, Test, and Evaluation Laboratories with DoD

DTIC Science & Technology

1994-04-08

Range, New Mexico , the National Aeronautics and Space Administration Langley Research Center in Hampton, Virginia, and the Lewis Research Center in...SUBMITTED TO CONGRESS MARCH 1993 40 Appendix £. Excerpt from the Army’s Justification for DoD Base Realignment and Closure SEXt BYSASD iNLi i/Ba

Uses of ceramics in microelectronics: A survey

NASA Technical Reports Server (NTRS)

Bratschun, W. R.; Mountvala, A. J.; Pincus, A. G.

1971-01-01

The properties and behavior of ceramic materials used in components for electronic circuitry are examined to appraise the present and future directions for microelectronics, and to suggest further product development, and how innovations may be useful in other technologies. Ceramic and glass insulators, resistors, capacitors, and the use of ceramics and glasses in microcircuitry are discussed along with technology transfer to nonaerospace uses.

Using Synchrotron Radiation Microtomography to Investigate Multi-scale Three-dimensional Microelectronic Packages

DOE PAGES

Carlton, Holly D.; Elmer, John W.; Li, Yan; ...

2016-04-13

For this study synchrotron radiation micro-­tomography, a non-destructive three-dimensional imaging technique, is employed to investigate an entire microelectronic package with a cross-sectional area of 16 x 16 mm. Due to the synchrotron’s high flux and brightness the sample was imaged in just 3 minutes with an 8.7 μm spatial resolution.

Investigation of “benign” ionic content in epoxy that induces microelectronic device failure

Treesearch

Gregory T. Schueneman; Jeffery Kingsbury; Edmund Klinkerch

2011-01-01

Microelectronics and the devices dependent upon them have the extremely challenging requirements of becoming more capable and less expensive every year. This drives the industry to pack more functions into an ever smaller footprint until the next technological revolution. Adding to this situation is the removal of lead from the bill of materials followed closely by...

Microelectronics used for Semiconductor Imaging Detectors

DOE Office of Scientific and Technical Information (OSTI.GOV)

Heijne, Erik H. M.

Semiconductor crystal technology, microelectronics developments and nuclear particle detection have been in a relation of symbiosis, all the way from the beginning. The increase of complexity in electronics chips can now be applied to obtain much more information on the incident nuclear radiation. Some basic technologies are described, in order to acquire insight in possibilities and limitations for the most recent detectors.

Validation of Direct Analysis Real Time source/Time-of-Flight Mass Spectrometry for organophosphate quantitation on wafer surface.

PubMed

Hayeck, Nathalie; Ravier, Sylvain; Gemayel, Rachel; Gligorovski, Sasho; Poulet, Irène; Maalouly, Jacqueline; Wortham, Henri

2015-11-01

Microelectronic wafers are exposed to airborne molecular contamination (AMC) during the fabrication process of microelectronic components. The organophosphate compounds belonging to the dopant group are one of the most harmful groups. Once adsorbed on the wafer surface these compounds hardly desorb and could diffuse in the bulk of the wafer and invert the wafer from p-type to n-type. The presence of these compounds on wafer surface could have electrical effect on the microelectronic components. For these reasons, it is of importance to control the amount of these compounds on the surface of the wafer. As a result, a fast quantitative and qualitative analytical method, nondestructive for the wafers, is needed to be able to adjust the process and avoid the loss of an important quantity of processed wafers due to the contamination by organophosphate compounds. Here we developed and validated an analytical method for the determination of organic compounds adsorbed on the surface of microelectronic wafers using the Direct Analysis in Real Time-Time of Flight-Mass Spectrometry (DART-ToF-MS) system. Specifically, the developed methodology concerns the organophosphate group. Copyright © 2015 Elsevier B.V. All rights reserved.

Silicon-Based Anode and Method for Manufacturing the Same

NASA Technical Reports Server (NTRS)

Yushin, Gleb Nikolayevich (Inventor); Zdyrko, Bogdan (Inventor); Magasinski, Alexandre (Inventor); Luzinov, Igor (Inventor)

2017-01-01

A silicon-based anode comprising silicon, a carbon coating that coats the surface of the silicon, a polyvinyl acid that binds to at least a portion of the silicon, and vinylene carbonate that seals the interface between the silicon and the polyvinyl acid. Because of its properties, polyvinyl acid binders offer improved anode stability, tunable properties, and many other attractive attributes for silicon-based anodes, which enable the anode to withstand silicon cycles of expansion and contraction during charging and discharging.

Demonstration of single crystal growth via solid-solid transformation of a glass

DOE PAGES

Savytskii, Dmytro; Knorr, Brian; Dierolf, Volkmar; ...

2016-03-18

Many advanced technologies have relied on the availability of single crystals of appropriate material such as silicon for microelectronics or superalloys for turbine blades. Similarly, many promising materials could unleash their full potential if they were available in a single crystal form. However, the current methods are unsuitable for growing single crystals of these oftentimes incongruently melting, unstable or metastable materials. Here we demonstrate a strategy to overcome this hurdle by avoiding the gaseous or liquid phase, and directly converting glass into a single crystal. Specifically, Sb 2S 3 single crystals are grown in Sb-S-I glasses as an example ofmore » this approach. In this first unambiguous demonstration of an all-solid-state glass → crystal transformation, extraneous nucleation is avoided relative to crystal growth via spatially localized laser heating and inclusion of a suitable glass former in the composition. Lastly, the ability to fabricate patterned single-crystal architecture on a glass surface is demonstrated, providing a new class of micro-structured substrate for low cost epitaxial growth, active planar devices, etc.« less

Full-field measurement of surface topographies and thin film stresses at elevated temperatures by digital gradient sensing method.

PubMed

Zhang, Changxing; Qu, Zhe; Fang, Xufei; Feng, Xue; Hwang, Keh-Chih

2015-02-01

Thin film stresses in thin film/substrate systems at elevated temperatures affect the reliability and safety of such structures in microelectronic devices. The stresses result from the thermal mismatch strain between the film and substrate. The reflection mode digital gradient sensing (DGS) method, a real-time, full-field optical technique, measures deformations of reflective surface topographies. In this paper, we developed this method to measure topographies and thin film stresses of thin film/substrate systems at elevated temperatures. We calibrated and compensated for the air convection at elevated temperatures, which is a serious problem for optical techniques. We covered the principles for surface topography measurements by the reflection mode DGS method at elevated temperatures and the governing equations to remove the air convection effects. The proposed method is applied to successfully measure the full-field topography and deformation of a NiTi thin film on a silicon substrate at elevated temperatures. The evolution of thin film stresses obtained by extending Stoney's formula implies the "nonuniform" effect the experimental results have shown.

Seeing Below the Drop: Direct Nano-to-microscale Imaging of Complex Interfaces involving Solid, Liquid, and Gas Phases

NASA Astrophysics Data System (ADS)

Rykaczewski, Konrad; Landin, Trevan; Walker, Marlon L.; Scott, John Henry J.; Varanasi, Kripa K.

2012-11-01

Nanostructured surfaces with special wetting properties have the potential to transform number of industries, including power generation, water desalination, gas and oil production, and microelectronics thermal management. Predicting the wetting properties of these surfaces requires detailed knowledge of the geometry and the composition of the contact volume linking the droplet to the underlying substrate. Surprisingly, a general nano-to-microscale method for direct imaging of such interfaces has previously not been developed. Here we introduce a three dimensional imaging method which resolves this one-hundred-year-old metrology gap in wetting research. Specifically, we demonstrate direct nano-to-microscale imaging of complex fluidic interfaces using cryofixation in combination with cryo-FIB/SEM. We show that application of this method yields previously unattainable quantitative information about the interfacial geometry of water condensed on silicon nanowire forests with hydrophilic and hydrophobic surface termination in the presence or absence of an intermediate water repelling oil. We also discuss imaging artifacts and the advantages of secondary and backscatter electron imaging, Energy Dispersive Spectrometry (EDS), and three dimensional FIB/SEM tomography.

Characterization of WB/SiC Schottky Barrier Diodes Using I-V-T Method

NASA Astrophysics Data System (ADS)

Aldridge, James; Oder, Tom

2009-04-01

The importance of silicon carbide (SiC) semiconductor for high temperature and high power microelectronic device applications has long been established. We have fabricated SiC Schottky barrier diodes using tungsten boride (WB) as the Schottky contact. The diodes were characterized using the current-voltage-temperature method. The sample was mounted on a heated stage and the temperature varied from about 25 ^oC to 300 ^oC at intervals of 25 ^oC. From the Richardson's plot, we obtained an energy barrier height of 0.96 eV and a Richardson's constant of 71.2 AK-1cm-2. Using the modified Richardson's plot, we obtained a barrier height of 1.01 eV. From the variation of the ideality factor and the temperature, we determined a characteristic energy of 0.02 eV to 0.04 eV across the range of the measurement temperature. This implies that thermionic emission is dominant in the low measurement temperature range. Our results confirm the excellent thermal stability of WB/SiC Schottky barrier diodes.

Poly-silicon TFT AM-OLED on thin flexible metal substrates

NASA Astrophysics Data System (ADS)

Afentakis, Themis; Hatalis, Miltiadis K.; Voutsas, Apostolos T.; Hartzell, John W.

2003-05-01

Thin metal foils present an excellent alternative to polymers for the fabrication of large area, flexible displays. Their main advantage spurs from their ability to withstand higher temperatures during processing; microelectronic fabrication at elevated temperatures offers the ability to utilize a variety of crystallization processes for the active layer of devices and thermally grown gate dielectrics. This can lead to high performance (high mobility, low threshold voltage) low cost and highly reliable thin film transistors. In some cases, the conductive substrate can also be used to provide power to the active devices, thus reducing layout complexity. This paper discusses the first successful attempt to design and fabricate a variety of active matrix organic light emitting diode displays on thin, flexible stainless steel foils. Different pixel architectures, such as two- and four-transistor implementations, and addressing modes, such as voltage- or current-driven schemese are examined. This work clearly demonstrates the advantages associated with the fabrication of OLED displays on thin metal foils, which - through roll-to-roll processing - can potentially result in revolutionizing today's display processing, leading to a new generation of low cost, high performance versatile display systems.

Electron beam patterning for writing of positively charged gold colloidal nanoparticles

NASA Astrophysics Data System (ADS)

Zafri, Hadar; Azougi, Jonathan; Girshevitz, Olga; Zalevsky, Zeev; Zitoun, David

2018-02-01

Synthesis at the nanoscale has progressed at a very fast pace during the last decades. The main challenge today lies in precise localization to achieve efficient nanofabrication of devices. In the present work, we report on a novel method for the patterning of gold metallic nanoparticles into nanostructures on a silicon-on-insulator (SOI) wafer. The fabrication makes use of relatively accessible equipment, a scanning electron microscope (SEM), and wet chemical synthesis. The electron beam implants electrons into the insulating material, which further anchors the positively charged Au nanoparticles by electrostatic attraction. The novel fabrication method was applied to several substrates useful in microelectronics to add plasmonic particles. The resolution and surface density of the deposition were tuned, respectively, by the electron energy (acceleration voltage) and the dose of electronic irradiation. We easily achieved the smallest written feature of 68 ± 18 nm on SOI, and the technique can be extended to any positively charged nanoparticles, while the resolution is in principle limited by the particle size distribution and the scattering of the electrons in the substrate. [Figure not available: see fulltext.

Probing Phase Transformations and Microstructural Evolutions at the Small Scales: Synchrotron X-ray Microdiffraction for Advanced Applications in [Phase 3 Memory,] 3D IC (Integrated Circuits) and Solar PV (Photovoltaic) Devices

DOE Office of Scientific and Technical Information (OSTI.GOV)

Radchenko, I.; Tippabhotla, S. K.; Tamura, N.

2016-10-21

Synchrotron x-ray microdiffraction (μXRD) allows characterization of a crystalline material in small, localized volumes. Phase composition, crystal orientation and strain can all be probed in few-second time scales. Crystalline changes over a large areas can be also probed in a reasonable amount of time with submicron spatial resolution. However, despite all the listed capabilities, μXRD is mostly used to study pure materials but its application in actual device characterization is rather limited. This article will explore the recent developments of the μXRD technique illustrated with its advanced applications in microelectronic devices and solar photovoltaic systems. Application of μXRD in microelectronicsmore » will be illustrated by studying stress and microstructure evolution in Cu TSV (through silicon via) during and after annealing. Here, the approach allowing study of the microstructural evolution in the solder joint of crystalline Si solar cells due to thermal cycling will be also demonstrated.« less

Effects of ionization radiation on BICMOS components for space application

NASA Astrophysics Data System (ADS)

Rancoita, P. G.; Croitoru, N.; D'Angelo, P.; de Marchi, M.; Favalli, A.; Seidman, A.; Colder, A.; Levalois, M.; Marie, P.; Fallica, G.; Leonardi, S.; Modica, R.

2002-12-01

In this paper experimental results on radiation effects on a BICMOS high-speed standard commercial technology, manufactured by ST-Microelectronics, are reported. Bipolar transistors were irradiated by neutrons, ions, or by both of them. Fast neutrons, as well as other types of particles, produce defects, mainly by displacing silicon atoms from their lattice positions to interstitial locations, i.e. generating vacancy-interstitial pairs, the so-called Frenkel pairs. Defects introduce trapping energy states which degrade the common emitter current gain . The gain degradation has bee investigated for collector current, Ic, between 1 μA and1 mA. It was found a linear dependence of Δ(1/β) = 1/β- 1/βi(where βi and β are the gain after and before tirradiation) as a function of the concentration of Frenkel pairs. The bipolar transistors made on this technology have shown to be particularly radiation resistant. For instance, npn small area transistors have a gain variation (-i)/, lower than 10% for doses of about 0.5 MRad and collector currents of 1 μA, well suited for low power consumption space application

Microelectronics Reliability

DTIC Science & Technology

2017-01-17

2016-0155 Kirtland AFB, NM 87117-5776 9. SPONSORING / MONITORING AGENCY NAME(S) AND ADDRESS(ES) 10. SPONSOR/MONITOR’S ACRONYM(S) AFRL /RVSW 11...22060-6218 1 cy AFRL /RVIL Kirtland AFB, NM 87117-5776 2 cys Official Record Copy AFRL /RVSW/Clay Mayberry 1 cy Approved for... AFRL -RV-PS- AFRL -RV-PS- TR-2016-0155 TR-2016-0155 MICROELECTRONICS RELIABILITY Clay Mayberry and Joseph Bernstein 17 Jan 2017 Interim Report

Microelectronic bioinstrumentation system

NASA Technical Reports Server (NTRS)

Ko, W. H.; Yon, E. T.; Rodriguez, R. J.

1974-01-01

The progess made from April 1973 to June 1974 on a microelectronics bioinstrumentation system is reported and includes data for the following three individual projects: (1) a radio frequency powered implant telemetry system; (2) an ingestible temperature telemeter; and (3) development of pO2 and pH sensors. Proposed activities for continuation of the research for the period September 1, 1974 to August 31, 1975 are also discussed.

Radiofrequency and microwave radiation in the microelectronics industry.

PubMed

Cohen, R

1986-01-01

The microscopic precision required to produce minute integrated circuits is dependent on several processes utilizing radiofrequency and microwave radiation. This article provides a review of radiofrequency and microwave exposures in microelectronics and of the physical and biologic properties of these types of radiation; summarizes the existing, relevant medical literature; and provides the clinician with guidelines for diagnosis and treatment of excessive exposures to microwave and radiofrequency radiation.

Energy efficient low-noise neural recording amplifier with enhanced noise efficiency factor.

PubMed

Majidzadeh, V; Schmid, A; Leblebici, Y

2011-06-01

This paper presents a neural recording amplifier array suitable for large-scale integration with multielectrode arrays in very low-power microelectronic cortical implants. The proposed amplifier is one of the most energy-efficient structures reported to date, which theoretically achieves an effective noise efficiency factor (NEF) smaller than the limit that can be achieved by any existing amplifier topology, which utilizes a differential pair input stage. The proposed architecture, which is referred to as a partial operational transconductance amplifier sharing architecture, results in a significant reduction of power dissipation as well as silicon area, in addition to the very low NEF. The effect of mismatch on crosstalk between channels and the tradeoff between noise and crosstalk are theoretically analyzed. Moreover, a mathematical model of the nonlinearity of the amplifier is derived, and its accuracy is confirmed by simulations and measurements. For an array of four neural amplifiers, measurement results show a midband gain of 39.4 dB and a -3-dB bandwidth ranging from 10 Hz to 7.2 kHz. The input-referred noise integrated from 10 Hz to 100 kHz is measured at 3.5 μVrms and the power consumption is 7.92 μW from a 1.8-V supply, which corresponds to NEF = 3.35. The worst-case crosstalk and common-mode rejection ratio within the desired bandwidth are - 43.5 dB and 70.1 dB, respectively, and the active silicon area of each amplifier is 256 μm × 256 μm in 0.18-μm complementary metal-oxide semiconductor technology.

Surface cleaning for enhanced adhesion to packaging surfaces: Effect of oxygen and ammonia plasma

DOE Office of Scientific and Technical Information (OSTI.GOV)

Gaddam, Sneha; Dong, Bin; Driver, Marcus

2015-03-15

The effects of direct plasma chemistries on carbon removal from silicon nitride (SiN{sub x}) and oxynitride (SiO{sub x}N{sub y}) surfaces have been studied by in-situ x-ray photoelectron spectroscopy (XPS) and ex-situ contact angle measurements. The data indicate that O{sub 2} and NH{sub 3} capacitively coupled plasmas are effective at removing adventitious carbon from silicon nitride (SiN{sub x}) and Si oxynitride (SiO{sub x}N{sub y}) surfaces. O{sub 2} plasma treatment results in the formation of a silica overlayer. In contrast, the exposure to NH{sub 3} plasma results in negligible additional oxidation of the SiN{sub x} or SiO{sub x}N{sub y} surface. Ex-situ contactmore » angle measurements show that SiN{sub x} and SiO{sub x}N{sub y} surfaces exposed to oxygen plasma are initially more hydrophilic than surfaces exposed to NH{sub 3} plasma, indicating that the O{sub 2} plasma-induced SiO{sub 2} overlayer is highly reactive toward ambient. At longer ambient exposures (≳10 h), however, surfaces treated by either O{sub 2} or NH{sub 3} plasma exhibit similar steady state contact angles, correlated with rapid uptake of adventitious carbon, as determined by XPS. Surface passivation by exposure to molecular hydrogen prior to ambient exposure significantly retards the increase in contact angle upon exposure to ambient. The results suggest a practical route to enhancing the time available for effective bonding to surfaces in microelectronics packaging applications.« less

The Co-60 gamma-ray irradiation effects on the Al/HfSiO4/p-Si/Al MOS capacitors

NASA Astrophysics Data System (ADS)

Lok, R.; Kaya, S.; Karacali, H.; Yilmaz, E.

2017-12-01

In this work, the initial interface trap density (Nit) to examine device compability for microelectronics and then the Co-60 gamma irradiation responses of Al/HfSiO4/p-Si/Al (MOS) capacitors were investigated in various dose ranges up to 70 Gy. Pre-irradiation response of the devices was evaluated from high frequency (HF) and low frequency (LF) capacitance method and the Nit was calculated as 9.91 × 1011 cm-2 which shows that the HfSiO4/p-Si interface quality is convenient for microelectronics applications. The irradiation responses of the devices were carried out from flat-band and mid-gap voltage shifts obtained from stretch of capacitance characteristics prior to and after irradiation. The results show that the flat band voltages very slightly shifted to positive voltage values demonstrating the enhancement of negative charge trapping in device structure. The sensitivity of the Al/HfSiO4/p-Si/Al MOS capacitors was found to be 4.41 mV/Gy for 300 nm-thick HfSiO4 gate dielectrics. This value approximately 6.5 times smaller compared to the same thickness conventional SiO2 based MOS devices. Therefore, HfSiO4 exhibits crucial irradiation tolerance in gamma irradiation environment. Consequently, HfSiO4 dielectrics may have significant usage for microelectronic technology as a radiation hard material where radiation field exists such as in space applications.

Using federal technology policy to strength the US microelectronics industry

NASA Astrophysics Data System (ADS)

Gover, J. E.; Gwyn, C. W.

1994-07-01

A review of US and Japanese experiences with using microelectronics consortia as a tool for strengthening their respective industries reveals major differences. Japan has established catch-up consortia with focused goals. These consortia have a finite life targeted from the beginning, and emphasis is on work that supports or leads to product and process-improvement-driven commercialization. Japan's government has played a key role in facilitating the development of consortia and has used consortia promote domestic competition. US consortia, on the other hand, have often emphasized long-range research with considerably less focus than those in Japan. The US consortia have searched for and often made revolutionary technology advancements. However, technology transfer to their members has been difficult. Only SEMATECH has assisted its members with continuous improvements, compressing product cycles, establishing relationships, and strengthening core competencies. The US government has not been a catalyst nor provided leadership in consortia creation and operation. We propose that in order to regain world leadership in areas where US companies lag foreign competition, the US should create industry-wide, horizontal-vertical, catch-up consortia or continue existing consortia in the six areas where the US lags behind Japan -- optoelectronics, displays, memories, materials, packaging, and manufacturing equipment. In addition, we recommend that consortia be established for special government microelectronics and microelectronics research integration and application. We advocate that these consortia be managed by an industry-led Microelectronics Alliance, whose establishment would be coordinated by the Department of Commerce. We further recommend that the Semiconductor Research Corporation, the National Science Foundation Engineering Research Centers, and relevant elements of other federal programs be integrated into this consortia complex.

Using federal technology policy to strength the US microelectronics industry

DOE Office of Scientific and Technical Information (OSTI.GOV)

Gover, J.E.; Gwyn, C.W.

1994-07-01

A review of US and Japanese experiences with using microelectronics consortia as a tool for strengthening their respective industries reveals major differences. Japan has established catch-up consortia with focused goals. These consortia have a finite life targeted from the beginning, and emphasis is on work that supports or leads to product and process-improvement-driven commercialization. Japan`s government has played a key role in facilitating the development of consortia and has used consortia promote domestic competition. US consortia, on the other hand, have often emphasized long-range research with considerably less focus than those in Japan. The US consortia have searched for andmore » often made revolutionary technology advancements. However, technology transfer to their members has been difficult. Only SEMATECH has assisted its members with continuous improvements, compressing product cycles, establishing relationships, and strengthening core competencies. The US government has not been a catalyst nor provided leadership in consortia creation and operation. We propose that in order to regain world leadership in areas where US companies lag foreign competition, the US should create industry-wide, horizontal-vertical, catch-up consortia or continue existing consortia in the six areas where the US lags behind Japan -- optoelectronics, displays, memories, materials, packaging, and manufacturing equipment. In addition, we recommend that consortia be established for special government microelectronics and microelectronics research integration and application. We advocate that these consortia be managed by an industry-led Microelectronics Alliance, whose establishment would be coordinated by the Department of Commerce. We further recommend that the Semiconductor Research Corporation, the National Science Foundation Engineering Research Centers, and relevant elements of other federal programs be integrated into this consortia complex.« less

Method of fabricating a microelectronic device package with an integral window

DOEpatents

Peterson, Kenneth A.; Watson, Robert D.

2003-01-01

A method of fabricating a microelectronic device package with an integral window for providing optical access through an aperture in the package. The package is made of a multilayered insulating material, e.g., a low-temperature cofired ceramic (LTCC) or high-temperature cofired ceramic (HTCC). The window is inserted in-between personalized layers of ceramic green tape during stackup and registration. Then, during baking and firing, the integral window is simultaneously bonded to the sintered ceramic layers of the densified package. Next, the microelectronic device is flip-chip bonded to cofired thick-film metallized traces on the package, where the light-sensitive side is optically accessible through the window. Finally, a cover lid is attached to the opposite side of the package. The result is a compact, low-profile package, flip-chip bonded, hermetically-sealed package having an integral window.

Strategic Computing. New-Generation Computing Technology: A Strategic Plan for Its Development and Application to Critical Problems in Defense

DTIC Science & Technology

1983-10-28

Computing. By seizing an opportunity to leverage recent advances in artificial intelligence, computer science, and microelectronics, the Agency plans...occurred in many separated areas of artificial intelligence, computer science, and microelectronics. Advances in "expert system" technology now...and expert knowledge o Advances in Artificial Intelligence: Mechanization of speech recognition, vision, and natural language understanding. o

Microelectronic device package with an integral window

DOEpatents

Peterson, Kenneth A.; Watson, Robert D.

2002-01-01

An apparatus for packaging of microelectronic devices, including an integral window. The microelectronic device can be a semiconductor chip, a CCD chip, a CMOS chip, a VCSEL chip, a laser diode, a MEMS device, or a IMEMS device. The package can include a cofired ceramic frame or body. The package can have an internal stepped structure made of one or more plates, with apertures, which are patterned with metallized conductive circuit traces. The microelectronic device can be flip-chip bonded on the plate to these traces, and oriented so that the light-sensitive side is optically accessible through the window. A cover lid can be attached to the opposite side of the package. The result is a compact, low-profile package, having an integral window that can be hermetically-sealed. The package body can be formed by low-temperature cofired ceramic (LTCC) or high-temperature cofired ceramic (HTCC) multilayer processes with the window being simultaneously joined (e.g. cofired) to the package body during LTCC or HTCC processing. Multiple chips can be located within a single package. The cover lid can include a window. The apparatus is particularly suited for packaging of MEMS devices, since the number of handling steps is greatly reduced, thereby reducing the potential for contamination.

PREFACE: The Second Conference on Microelectronics, Microsystems and Nanotechnology

NASA Astrophysics Data System (ADS)

Nassiopoulou, Androula G.; Papanikolaou, Nikos; Tsamis, Christos

2005-01-01

The Second Conference on Microelectronics, Microsystems and Nanotechnology took place at the National Centre for Scientific Research `Demokritos', in Athens, Greece, between 14 and 17 November 2004. The conference was organized by the Institute of Microelectronics (IMEL) with the aim to bring together scientists and engineers working in the above exciting fields in an interactive forum. The conference included 45 oral presentations with 9 invited papers and was attended by 146 participants from 16 countries. The topics covered were nanotechnologies, quantum devices, sensors, micro- and nano-systems, semiconductor devices, C-MOS fabrication and characterization techniques, new materials, and IC design. Quantum devices and nanostructured materials attracted considerable attention. Both theoretical and experimental studies of metallic and semiconducting quantum systems were presented, with emphasis on their applications in electronics, optoelectronics, and nanocrystal memory devices. Another exciting topic was the recent developments in biocompatible lithographic processes for applications in biosensors. In particular novel processes for bio-friendly lithography, together with innovations in Si sensors for applications in medicine and food industry were presented. Recent developments and perspectives in CMOS technology towards the ultimate limit were also discussed. The conference covered issues and concepts of IC design with two invited talks on RF design and cryptography.The conference included presentations from several companies active in the field of microelectronics and systems in Greece.

Hydrogen sensors based on catalytic metals

NASA Astrophysics Data System (ADS)

Beklemyshev, V. I.; Berezine, V.; Bykov, Victor A.; Kiselev, L.; Makhonin, I.; Pevgov, V.; Pustovoy, V.; Semynov, A.; Sencov, Y.; Shkuropat, I.; Shokin, A.

1999-11-01

On the base of microelectronical and micromechanical technology were designed and developed converters of hydrogen concentration to electrical signals. The devices of controlling concentration of hydrogen in the air were developed. These devices were applied for ensuring fire and explosion security of complex technological teste of missile oxygen-hydrogen engine, developed for cryogenic accelerations block. The sensor block of such device was installed directly on the armor-plate, to which was attached tested engine.

The merger of electrochemistry and molecular electronics.

PubMed

McCreery, Richard L

2012-02-01

Molecular Electronics has the potential to greatly enhance existing silicon-based microelectronics to realize new functions, higher device density, lower power consumption, and lower cost. Although the investigation of electron transport through single molecules and molecular monolayers in "molecular junctions" is a recent development, many of the relevant concepts and phenomena are derived from electrochemistry, as practiced for the past several decades. The past 10+ years have seen an explosion of research activity directed toward how the structure of molecules affects electron transport in molecular junctions, with the ultimate objective of "rational design" of molecular components with new electronic functions, such as chemical sensing, interactions with light, and low-cost, low-power consumer electronics. In order to achieve these scientifically and commercially important objectives, the factors controlling charge transport in molecules "connected" to conducting contacts must be understood, and methods for massively parallel manufacturing of molecular circuits must be developed. This Personal Account describes the development of reproducible and robust molecular electronic devices, starting with modified electrodes used in electrochemistry and progressing to manufacturable molecular junctions. Although the field faced some early difficulties in reliability and characterization, the pieces are now in place for rapid advances in understanding charge transport at the molecular level. Inherent in the field of Molecular Electronics are many electrochemical concepts, including tunneling, redox exchange, activated electron transfer, and electron coupling between molecules and conducting contacts. Copyright © 2012 The Japan Chemical Journal Forum and Wiley Periodicals, Inc.

Fabrication and characterization of a pd nanowire-based glucose biofuel cell

NASA Astrophysics Data System (ADS)

Amoah, Kweku Obeng

The use of glucose as a source in biofuel cell technology has received a lot of attention in part due to the potential applications of such systems. In addition to the being a clean energy alternative, it provides a pathway for implantable microelectronic devices, such as pacemakers, to be powered by interstitial fluid and eliminate the need for batteries. Furthermore, using interstitial fluid as fuel sources will drastically reduce necessary invasive surgeries to replace batteries. Additionally, cost to such patients will be reduced while quality of life enhanced. The research presents a unique platform for harvesting energy from glucose. Using semiconductor cleanroom techniques, electrically conductive palladium nanowires are grown on anodized aluminum oxide templates using silicon and glass as supporting substrates. Photolithography is used to create two non-continuous gold windows and contact pads on the substrates. AAO templates are attached to the two gold windows and palladium nanowires are electrochemically grown on the AAO templates. Glucose oxidase and catalase are immobilized on the anode and laccase on the cathode. In the presence of glucose, electrons are released that result in the generation of voltage and current. The current-voltage behavior of the fuel cell, as well as electrochemical properties, is characterized using standard performance metrics. In 5 mM glucose solution with a neutral pH of 7.3, the open circuit voltage obtained was 335 mV and the short circuit current of 6 microA to yield a maximum power output of 1.38 microW.

Smallest Nanoelectronic with Atomic Devices with Precise Structures

NASA Technical Reports Server (NTRS)

Yamada, Toshishige

2000-01-01

Since its invention in 1948, the transistor has revolutionized our everyday life - transistor radios and TV's appeared in the early 1960s, personal computers came into widespread use in the mid-1980s, and cellular phones, laptops, and palm-sized organizers dominated the 1990s. The electronics revolution is based upon transistor miniaturization; smaller transistors are faster, and denser circuitry has more functionality. Transistors in current generation chips are 0.25 micron or 250 nanometers in size, and the electronics industry has completed development of 0.18 micron transistors which will enter production within the next few years. Industry researchers are now working to reduce transistor size down to 0.13 micron - a thousandth of the width of a human hair. However, studies indicate that the miniaturization of silicon transistors will soon reach its limit. For further progress in microelectronics, scientists have turned to nanotechnology to advance the science. Rather than continuing to miniaturize transistors to a point where they become unreliable, nanotechnology offers the new approach of building devices on the atomic scale [see sidebar]. One vision for the next generation of miniature electronics is atomic chain electronics, where devices are composed of atoms aligned on top of a substrate surface in a regular pattern. The Atomic Chain Electronics Project (ACEP) - part of the Semiconductor Device Modeling and Nanotechnology group, Integrated Product Team at the NAS Facility has been developing the theory of understanding atomic chain devices, and the author's patent for atomic chain electronics is now pending.

Optical Material Characterization Using Microdisk Cavities

NASA Astrophysics Data System (ADS)

Michael, Christopher P.

Since Jack Kilby recorded his "Monolithic Idea" for integrated circuits in 1958, microelectronics companies have invested billions of dollars in developing the silicon material system to increase performance and reduce cost. For decades, the industry has made Moore's Law, concerning cost and transistor density, a self-fulfilling prophecy by integrating technical and material requirements vertically down their supply chains and horizontally across competitors in the market. At recent technology nodes, the unacceptable scaling behavior of copper interconnects has become a major design constraint by increasing latency and power consumption---more than 50% of the power consumed by high speed processors is dissipated by intrachip communications. Optical networks at the chip scale are a potential low-power high-bandwidth replacement for conventional global interconnects, but the lack of efficient on-chip optical sources has remained an outstanding problem despite significant advances in silicon optoelectronics. Many material systems are being researched, but there is no ideal candidate even though the established infrastructure strongly favors a CMOS-compatible solution. This thesis focuses on assessing the optical properties of materials using microdisk cavities with the intention to advance processing techniques and materials relevant to silicon photonics. Low-loss microdisk resonators are chosen because of their simplicity and long optical path lengths. A localized photonic probe is developed and characterized that employs a tapered optical-fiber waveguide, and it is utilized in practical demonstrations to test tightly arranged devices and to help prototype new fabrication methods. A case study in AlxGa1-xAs illustrates how the optical scattering and absorption losses can be obtained from the cavity-waveguide transmission. Finally, single-crystal Er2O3 epitaxially grown on silicon is analyzed in detail as a potential CMOS-compatable gain medium due to its high Er3+ density and the control offered by the precise epitaxy. The growth and fabrication methods are discussed. Spectral measurements at cryogenic and room temperatures show negligible background losses and resonant Er3+ absorption strong enough to produce cavity-polaritons that persist to above 361 K. Cooperative relaxation and upconversion limit the optical performance in the telecommunications bands by transferring the excitations to quenching sites or by further exciting the ions up to visible transitions. Future prospects and alternative applications for Er2O3 and other epitaxial rare-earth oxides are also considered.

Microelectronics Status Analysis and Secondary Part Procureability Assessment of the THAAD Weapon System

DTIC Science & Technology

1999-10-01

Technical Report 5-20448 & 5- 20449 Contract No. DAAH01-98-D-R001 Delivery Order No. 34 Microelectronics Status Analysis and Secondary Part...Procureability Assessment of the THAAD Weapon System. (5-20448 & 5- 20449 ) Final Technical Report for Period 21 January 1999 through 30 September 1999...Huntsville Huntsville, AL 35899 5. FUNDING NUMBERS 8. PERFORMING ORGANIZATION REPORT NUMBER 5-20448 & 5- 20449 9. SPONSORING/MONITORING AGENCY

Reduction of particle deposition on substrates using temperature gradient control

DOEpatents

Rader, Daniel J.; Dykhuizen, Ronald C.; Geller, Anthony S.

2000-01-01

A method of reducing particle deposition during the fabrication of microelectronic circuitry is presented. Reduction of particle deposition is accomplished by controlling the relative temperatures of various parts of the deposition system so that a large temperature gradient near the surface on which fabrication is taking place exists. This temperature gradient acts to repel particles from that surface, thereby producing cleaner surfaces, and thus obtaining higher yields from a given microelectronic fabrication process.

Electromagnetic Compatibility (EMC) in Microelectronics.

DTIC Science & Technology

1983-02-01

Fault Tree Analysis", System Saftey Symposium, June 8-9, 1965, Seattle: The Boeing Company . 12. Fussell, J.B., "Fault Tree Analysis-Concepts and...procedure for assessing EMC in microelectronics and for applying DD, 1473 EOiTO OP I, NOV6 IS OESOL.ETE UNCLASSIFIED SECURITY CLASSIFICATION OF THIS...CRITERIA 2.1 Background 2 2.2 The Probabilistic Nature of EMC 2 2.3 The Probabilistic Approach 5 2.4 The Compatibility Factor 6 3 APPLYING PROBABILISTIC

Radiation measurement in the environment of FLASH using passive dosimeters

NASA Astrophysics Data System (ADS)

Mukherjee, B.; Rybka, D.; Makowski, D.; Lipka, T.; Simrock, S.

2007-08-01

Sophisticated electronic devices comprising sensitive microelectronic components have been installed in the close proximity of the 720 MeV superconducting electron linear accelerator (linac) driving the FLASH (Free Electron Laser in Hamburg), presently in operation at DESY in Hamburg. Microelectronic chips are inherently vulnerable to ionizing radiation, usually generated during routine operation of high-energy particle accelerator facilities like the FLASH. Hence, in order to assess the radiation effect on microelectronic chips and to develop suitable mitigation strategy, it becomes imperative to characterize the radiation field in the FLASH environment. We have evaluated the neutron and gamma energy (spectra) and dose distributions at critical locations in the FLASH tunnel using superheated emulsion (bubble) detectors, GaAs light emitting diodes (LED), LiF-thermoluminescence dosimeters (TLD) and radiochromic (Gafchromic EBT) films. This paper highlights the application of passive dosimeters for an accurate analysis of the radiation field produced by high-energy electron linear accelerators.

Book of Knowledge (BOK) for NASA Electronic Packaging Roadmap

NASA Technical Reports Server (NTRS)

Ghaffarian, Reza

2015-01-01

The objective of this document is to update the NASA roadmap on packaging technologies (initially released in 2007) and to present the current trends toward further reducing size and increasing functionality. Due to the breadth of work being performed in the area of microelectronics packaging, this report presents only a number of key packaging technologies detailed in three industry roadmaps for conventional microelectronics and a more recently introduced roadmap for organic and printed electronics applications. The topics for each category were down-selected by reviewing the 2012 reports of the International Technology Roadmap for Semiconductor (ITRS), the 2013 roadmap reports of the International Electronics Manufacturing Initiative (iNEMI), the 2013 roadmap of association connecting electronics industry (IPC), the Organic Printed Electronics Association (OE-A). The report also summarizes the results of numerous articles and websites specifically discussing the trends in microelectronics packaging technologies.

Laser processing of ceramics for microelectronics manufacturing

NASA Astrophysics Data System (ADS)

Sposili, Robert S.; Bovatsek, James; Patel, Rajesh

2017-03-01

Ceramic materials are used extensively in the microelectronics, semiconductor, and LED lighting industries because of their electrically insulating and thermally conductive properties, as well as for their high-temperature-service capabilities. However, their brittleness presents significant challenges for conventional machining processes. In this paper we report on a series of experiments that demonstrate and characterize the efficacy of pulsed nanosecond UV and green lasers in machining ceramics commonly used in microelectronics manufacturing, such as aluminum oxide (alumina) and aluminum nitride. With a series of laser pocket milling experiments, fundamental volume ablation rate and ablation efficiency data were generated. In addition, techniques for various industrial machining processes, such as shallow scribing and deep scribing, were developed and demonstrated. We demonstrate that lasers with higher average powers offer higher processing rates with the one exception of deep scribes in aluminum nitride, where a lower average power but higher pulse energy source outperformed a higher average power laser.

Bi-level multilayered microelectronic device package with an integral window

DOEpatents

Peterson, Kenneth A.; Watson, Robert D.

2002-01-01

A bi-level, multilayered package with an integral window for housing a microelectronic device. The device can be a semiconductor chip, a CCD chip, a CMOS chip, a VCSEL chip, a laser diode, a MEMS device, or a IMEMS device. The multilayered package can be formed of a low-temperature cofired ceramic (LTCC) or high-temperature cofired ceramic (HTCC) multilayer processes with the window being simultaneously joined (e.g. cofired) to the package body during LTCC or HTCC processing. The microelectronic device can be flip-chip bonded and oriented so that the light-sensitive side is optically accessible through the window. A second chip can be bonded to the backside of the first chip, with the second chip being wirebonded to the second level of the bi-level package. The result is a compact, low-profile package, having an integral window that can be hermetically-sealed.

Thermal shock testing for assuring reliability of glass-sealed microelectronic packages

NASA Technical Reports Server (NTRS)

Thomas, Walter B., III; Lewis, Michael D.

1991-01-01

Tests were performed to determine if thermal shocking is destructive to glass-to-metal seal microelectronic packages and if thermal shock step stressing can compare package reliabilities. Thermal shocking was shown to be not destructive to highly reliable glass seals. Pin-pull tests used to compare the interfacial pin glass strengths showed no differences between thermal shocked and not-thermal shocked headers. A 'critical stress resistance temperature' was not exhibited by the 14 pin Dual In-line Package (DIP) headers evaluated. Headers manufactured in cryogenic nitrogen based and exothermically generated atmospheres showed differences in as-received leak rates, residual oxide depths and pin glass interfacial strengths; these were caused by the different manufacturing methods, in particular, by the chemically etched pins used by one manufacturer. Both header types passed thermal shock tests to temperature differentials of 646 C. The sensitivity of helium leak rate measurements was improved up to 70 percent by baking headers for two hours at 200 C after thermal shocking.

Millimeter-wave MMIC technology for smart weapons

NASA Astrophysics Data System (ADS)

Seashore, Charles R.

1994-12-01

Millimeter wave MMIC component technology has made dramatic progress over the last ten years largely due to funding stimulation received under the ARPA Tri-Service MIMIC program. In several smart weapon systems, MMIC components are now specified as the baseline approach for millimeter wave radar transceiver hardware. Availability of this new frontier in microelectronics has also enabled realization of sensor fusion for multispectral capability to defeat many forms of known countermeasures. The current frequency range for these MMIC-based components is approximately 30 to 100 GHz. In several cases, it has been demonstrated that the MMIC component performance has exceeded that available from hybrid microstrip circuits using selected discrete devices. However, challenges still remain in chip producibility enhancement and cost reduction since many of the essential device structure candidates are themselves emerging technologies with a limited wafer fabrication history and accumulated test databases. It is concluded that smart weapons of the future will rely heavily on advanced microelectronics to satisfy performance requirements as well as meeting stringent packaging and power source constraints.

Possibilities for mixed mode chip manufacturing in EUROPRACTICE

NASA Astrophysics Data System (ADS)

Das, C.

1997-02-01

EUROPRACTICE is an EC initiative under the ESPRIT programme which aims to stimulate the wider exploitation of state-of-the-art microelectronics technologies by European industry and to enhance European industrial competitiveness in the global market-place. Through EUROPRACTICE, the EC has created a range of Basic Services that offer users a cost-effective and flexible means of accessing three main microelectronics-based technologies: Application Specific Integrated Circuit (ASICs), Multi-Chip Modules (MCMs) and Microsystems. EUROPRACTICE Basic Services reduce the cost and risk for companies wishing to begin using these technologies. EUROPRACTICE offers a fully supported, low cost route for companies to design and fabricate ASICs for their individual applications. Low cost is achieved by consolidating designs from many users onto a single semiconductor wafer (MPW: Multi Project Wafer). The EUROPRACTICE IC Manufacturing Service (ICMS) offers a broad range of fabrication technologies including CMOS, BiCMOS and GaAs. The Service extends from enabling users to produce prototype ASICs for testing and evaluation, through to low-volume production runs.

All-gas-phase synthesis of UiO-66 through modulated atomic layer deposition

NASA Astrophysics Data System (ADS)

Lausund, Kristian Blindheim; Nilsen, Ola

2016-11-01

Thin films of stable metal-organic frameworks (MOFs) such as UiO-66 have enormous application potential, for instance in microelectronics. However, all-gas-phase deposition techniques are currently not available for such MOFs. We here report on thin-film deposition of the thermally and chemically stable UiO-66 in an all-gas-phase process by the aid of atomic layer deposition (ALD). Sequential reactions of ZrCl4 and 1,4-benzenedicarboxylic acid produce amorphous organic-inorganic hybrid films that are subsequently crystallized to the UiO-66 structure by treatment in acetic acid vapour. We also introduce a new approach to control the stoichiometry between metal clusters and organic linkers by modulation of the ALD growth with additional acetic acid pulses. An all-gas-phase synthesis technique for UiO-66 could enable implementations in microelectronics that are not compatible with solvothermal synthesis. Since this technique is ALD-based, it could also give enhanced thickness control and the possibility to coat irregular substrates with high aspect ratios.

[Application of microelectronics CAD tools to synthetic biology].

PubMed

Madec, Morgan; Haiech, Jacques; Rosati, Élise; Rezgui, Abir; Gendrault, Yves; Lallement, Christophe

2017-02-01

Synthetic biology is an emerging science that aims to create new biological functions that do not exist in nature, based on the knowledge acquired in life science over the last century. Since the beginning of this century, several projects in synthetic biology have emerged. The complexity of the developed artificial bio-functions is relatively low so that empirical design methods could be used for the design process. Nevertheless, with the increasing complexity of biological circuits, this is no longer the case and a large number of computer aided design softwares have been developed in the past few years. These tools include languages for the behavioral description and the mathematical modelling of biological systems, simulators at different levels of abstraction, libraries of biological devices and circuit design automation algorithms. All of these tools already exist in other fields of engineering sciences, particularly in microelectronics. This is the approach that is put forward in this paper. © 2017 médecine/sciences – Inserm.

Scalable fabrication of carbon-based MEMS/NEMS and their applications: a review

NASA Astrophysics Data System (ADS)

Jiang, Shulan; Shi, Tielin; Zhan, Xiaobin; Xi, Shuang; Long, Hu; Gong, Bo; Li, Junjie; Cheng, Siyi; Huang, Yuanyuan; Tang, Zirong

2015-11-01

The carbon-based micro/nano electromechanical system (MEMS/NEMS) technique provides a powerful approach to large-scale manufacture of high-aspect-ratio carbon structures for wafer-level processing. The fabricated three-dimensional (3D) carbon structures have the advantages of excellent electrical and electrochemical properties, and superior biocompatibility. In order to improve their performance for applications in micro energy storage devices and microsensors, an increase in the footprint surface area is of great importance. Various approaches have been proposed for fabricating large surface area carbon-based structures, including the integration of nanostructures such as carbon nanotubes (CNTs), graphene, nanowires, nanofilms and nanowrinkles onto 3D structures, which has been proved to be effective and productive. Moreover, by etching the 3D photoresist microstructures through oxygen plasma or modifying the photoresist with specific materials which can be etched in the following pyrolysis process, micro/nano hierarchical carbon structures have been fabricated. These improved structures show excellent performance in various applications, especially in the fields of biological sensors, surface-enhanced Raman scattering, and energy storage devices such as micro-supercapacitors and fuel cells. With the rapid development of microelectronic devices, the carbon-based MEMS/NEMS technique could make more aggressive moves into microelectronics, sensors, miniaturized power systems, etc. In this review, the recent advances in the fabrication of micro/nano hierarchical carbon-based structures are introduced and the technical challenges and future outlook of the carbon-based MEMS/NEMS techniques are also analyzed.

Commercialization Issues For Catheter-Based Electrochemical Sensors

NASA Astrophysics Data System (ADS)

Nikolchev, Julian; Gaisford, Scott

1989-08-01

The need for continuous monitoring of key clinical parameters in hospitals is well recognized. Figure 1 shows typical time constants for blood gases, ions and enzymes in response to acute ventilatory changes and interventions. Although it can be seen that relatively low rates of data collection are necessary for many medical measurements, it is also clear that intermittent measurement of P02, PCO2 and pH are not sufficient to provide safe and effective management of the patient. Very frequent or continuous monitoring is often essential. This figure also shows why the emphasis of a large number of research efforts in this country and in Europe and Japan have as their goal the development of continuous blood gas sensors, i.e., sensors that continuously monitor blood pH, partial pressure of oxygen and partial pressure of carbon dioxide. These are three (3) of the most frequent parameters measured in hospitals and the ones having the shortest time constant. Considering that in the United States alone close to 25 million blood gas samples per year are taken from patients, the potential market for continuous monitoring sensors is enormous. The emergence of microelectronics and microfabrication technologies over the past 30 years are now pointing to a possible resolution of the well recognized need for real time monitoring of critically ill patients through catheter-based sensors. Although physicians will always prefer non-invasive monitoring techniques, there are a number of parameters that presently can only be monitored by invasive method. The emerging ability to miniaturize chemical sensors using silicon microfabrication or fiber-optic techniques offer an excellent opportunity to solve this need. In fact, the development of in vivo biomedical sensors with satisfactory performance characteristics has long been considered the ultimate application of these emerging technologies.

Possible Circuit Architectures for Molecular Nanoelectronics

NASA Astrophysics Data System (ADS)

Likharev, Konstantin

2003-03-01

Chemically-directed self-assembly of molecular devices is apparently the only feasible way to continue the fast progress of microelectronics after its Moore-Laws-based development runs into the wall of physical and economic limitations [1]. The architectures of VLSI circuits using such devices should be substantially fault-tolerant and accommodate other their features including low transconductance. The most significant feature of all promising suggested architectures is the hybridization of three technologies: advanced CMOS, simple nanowire arrays, and molecular devices self-assembling on these wires. Molecular memory arrays may have a simple structure, and their simple prototypes have already been implemented experimentally [2]. In contrast, the logic circuit development is just starting. I will describe a family of neuromorphic networks based on so-called CrossNet arrays [3] that look promising for advanced information processing, starting from fast image recognition and beyond. This architecture may combine very high density (above 10^12 functions per cm^2) and relatively high speed (100-ns-scale latency of cell-to-cell communications) at acceptable power consumption. In future, these features may allow to put an artificial analog of the human cerebral cortex, capable of processing information and (hopefully) self-evolution at 4 to 5 orders of magnitude faster than its biological prototype, on a 20x20 cm^2 silicon wafer. [1] K. Likharev, "Electronics Below 20-nm", see http://rsfq1.physics.sunysb.edu/ likharev/nano/ForMorkoc.pdf. [2] See, e.g, http://nanotechweb.org/articles/news/1/9/8/1. [3] O. Turel and K. Likharev, Int. J. of Circuit Theory and Applications 31, No.1 (2003); see http://rsfq1.physics.sunysb.edu/ likharev/nano/Preprint070102.pdf.

Development of micromachine tool prototypes for microfactories

NASA Astrophysics Data System (ADS)

Kussul, E.; Baidyk, T.; Ruiz-Huerta, L.; Caballero-Ruiz, A.; Velasco, G.; Kasatkina, L.

2002-11-01

At present, many areas of industry have strong tendencies towards miniaturization of products. Mechanical components of these products as a rule are manufactured using conventional large-scale equipment or micromechanical equipment based on microelectronic technology (MEMS). The first method has some drawbacks because conventional large-scale equipment consumes much energy, space and material. The second method seems to be more advanced but has some limitations, for example, two-dimensional (2D) or 2.5-dimensional shapes of components and materials compatible with silicon technology. In this paper, we consider an alternative technology of micromechanical device production. This technology is based on micromachine tools (MMT) and microassembly devices, which can be produced as sequential generations of microequipment. The first generation can be produced by conventional large-scale equipment. The machine tools of this generation can have overall sizes of 100-200 mm. Using microequipment of this generation, second generation microequipment having smaller overall sizes can be produced. This process can be repeated to produce generations of micromachine tools having overall sizes of some millimetres. In this paper we describe the efforts and some results of first generation microequipment prototyping. A micromachining centre having an overall size of 130 × 160 × 85 mm3 was produced and characterized. This centre has allowed us to manufacture micromechanical details having sizes from 50 µm to 5 mm. These details have complex three-dimensional shapes (for example, screw, gear, graduated shaft, conic details, etc), and are made from different materials, such as brass, steel, different plastics etc. We have started to investigate and to make prototypes of the assembly microdevices controlled by a computer vision system. In this paper we also describe an example of the applications (microfilters) for the proposed technology.

Recent Advances in Silicon Nanomaterial-Based Fluorescent Sensors.

PubMed

Wang, Houyu; He, Yao

2017-02-03

During the past decades, owing to silicon nanomaterials' unique optical properties, benign biocompatibility, and abundant surface chemistry, different dimensional silicon nanostructures have been widely employed for rationally designing and fabricating high-performance fluorescent sensors for the detection of various chemical and biological species. Among of these, zero-dimensional silicon nanoparticles (SiNPs) and one-dimensional silicon nanowires (SiNWs) are of particular interest. Herein, we focus on reviewing recent advances in silicon nanomaterials-based fluorescent sensors from a broad perspective and discuss possible future directions. Firstly, we introduce the latest achievement of zero-dimensional SiNP-based fluorescent sensors. Next, we present recent advances of one-dimensional SiNW-based fluorescent sensors. Finally, we discuss the major challenges and prospects for the development of silicon-based fluorescent sensors.

Recent Advances in Silicon Nanomaterial-Based Fluorescent Sensors

PubMed Central

Wang, Houyu; He, Yao

2017-01-01

During the past decades, owing to silicon nanomaterials’ unique optical properties, benign biocompatibility, and abundant surface chemistry, different dimensional silicon nanostructures have been widely employed for rationally designing and fabricating high-performance fluorescent sensors for the detection of various chemical and biological species. Among of these, zero-dimensional silicon nanoparticles (SiNPs) and one-dimensional silicon nanowires (SiNWs) are of particular interest. Herein, we focus on reviewing recent advances in silicon nanomaterials-based fluorescent sensors from a broad perspective and discuss possible future directions. Firstly, we introduce the latest achievement of zero-dimensional SiNP-based fluorescent sensors. Next, we present recent advances of one-dimensional SiNW-based fluorescent sensors. Finally, we discuss the major challenges and prospects for the development of silicon-based fluorescent sensors. PMID:28165357

Methods of Si based ceramic components volatilization control in a gas turbine engine

DOE Office of Scientific and Technical Information (OSTI.GOV)

Garcia-Crespo, Andres Jose; Delvaux, John; Dion Ouellet, Noemie

A method of controlling volatilization of silicon based components in a gas turbine engine includes measuring, estimating and/or predicting a variable related to operation of the gas turbine engine; correlating the variable to determine an amount of silicon to control volatilization of the silicon based components in the gas turbine engine; and injecting silicon into the gas turbine engine to control volatilization of the silicon based components. A gas turbine with a compressor, combustion system, turbine section and silicon injection system may be controlled by a controller that implements the control method.

Functionally gradient hard carbon composites for improved adhesion and wear

NASA Astrophysics Data System (ADS)

Narayan, Roger Jagdish

A new approach is proposed for fabricating biomedical devices that last longer and are more biocompatible than those presently available. In this approach, a bulk material is chosen that has desirable mechanical properties (low modulus, high strength, high ductility and high fatigue strength). This material is coated with corrosion-resistant, wear-resistant, hard, and biocompatible hard carbon films. One of the many forms of carbon, tetrahedral amorphous carbon, consists mainly of sp3-bonded atoms. Tetrahedral amorphous carbon possesses properties close to diamond in terms of hardness, atomic smoothness, and inertness. Tetrahedral amorphous carbon and diamond films usually contain large amounts of compressive and sometimes tensile stresses; adhesive failure from these stresses has limited widespread use of these materials. This research involves processing, characterization and modeling of functionally gradient tetrahedral amorphous carbon and diamond composite films on metals (cobalt-chromium and titanium alloys) and polymers (polymethylmethacrylate and polyethylene) used in biomedical applications. Multilayer discontinuous thin films of titanium carbide, titanium nitride, aluminum nitride, and tungsten carbide have been developed to control stresses and graphitization in diamond films. A morphology of randomly interconnected micron sized diamond crystallites provides increased toughness and stress reduction. Internal stresses in tetrahedral amorphous carbon were reduced via incorporation of carbide forming elements (silicon and titanium) and noncarbide forming elements (copper, platinum, and silver). These materials were produced using a novel target design during pulsed laser deposition. These alloying atoms reduce hardness and sp3-bonded carbon content, but increase adhesion and wear resistance. Silver and platinum provide the films with antimicrobial properties, and silicon provides bioactivity and aids bone formation. Bilayer coatings were created that couple the adherence, biocompatibility, erosion resistance, and long term release of functional elements from hard carbon coatings with bioactive properties of nanocrystalline hydroxyapatite and short term drug release properties of resorbable poly (D,L) lactide-based materials. Finally, these hard carbon coatings have a variety of non-medical applications, including use in microelectronics packaging, sensors, flat panel displays, photodiodes, cutting tools, optical switches, and wear-resistant magnetic disks.

Engineering in-plane silicon nanowire springs for highly stretchable electronics

NASA Astrophysics Data System (ADS)

Xue, Zhaoguo; Dong, Taige; Zhu, Zhimin; Zhao, Yaolong; Sun, Ying; Yu, Linwei

2018-01-01

Crystalline silicon (c-Si) is unambiguously the most important semiconductor that underpins the development of modern microelectronics and optoelectronics, though the rigid and brittle nature of bulk c-Si makes it difficult to implement directly for stretchable applications. Fortunately, the one-dimensional (1D) geometry, or the line-shape, of Si nanowire (SiNW) can be engineered into elastic springs, which indicates an exciting opportunity to fabricate highly stretchable 1D c-Si channels. The implementation of such line-shape-engineering strategy demands both a tiny diameter of the SiNWs, in order to accommodate the strains under large stretching, and a precise growth location, orientation and path control to facilitate device integration. In this review, we will first introduce the recent progresses of an in-plane self-assembly growth of SiNW springs, via a new in-plane solid-liquid-solid (IPSLS) mechanism, where mono-like but elastic SiNW springs are produced by surface-running metal droplets that absorb amorphous Si thin film as precursor. Then, the critical growth control and engineering parameters, the mechanical properties of the SiNW springs and the prospects of developing c-Si based stretchable electronics, will be addressed. This efficient line-shape-engineering strategy of SiNW springs, accomplished via a low temperature batch-manufacturing, holds a strong promise to extend the legend of modern Si technology into the emerging stretchable electronic applications, where the high carrier mobility, excellent stability and established doping and passivation controls of c-Si can be well inherited. Project supported by the National Basic Research 973 Program (No. 2014CB921101), the National Natural Science Foundation of China (No. 61674075), the National Key Research and Development Program of China (No. 2017YFA0205003), the Jiangsu Excellent Young Scholar Program (No. BK20160020), the Scientific and Technological Support Program in Jiangsu Province (No. BE2014147-2), the Jiangsu Shuangchuang Team's Personal Program and the Fundamental Research Funds for the Central Universities, and the China Scholarship Council and the Postgraduate Program of Jiangsu Province (No. KYZZ160052).

SETA Support for the DARPA Microelectronics Technology Insertion Program of the Microelectronics Technology Office

DTIC Science & Technology

1992-08-17

Conclusions. Key personnel planned and administered the 193-nm lithography SBIR workshop on May 7, 1992 as well as planned the GaAs Insertion...converters can use Josephson junctions (JJ) to improve performance. Superconductive quantum interference devices (SQUIDs), such as JJs, are used to form...forward control of a lithography stepper. Mark Conner at Booz-Allen has copies of the charts. You should take a few minutes to review them. I asked Costos

A Low Cost Rad-Tolerant Standard Cell Library

NASA Technical Reports Server (NTRS)

Gambles, Jody W.; Maki, Gary K.

1997-01-01

This paper describes circuit design techniques developed at the NASA Institute of Advanced Microelectronics that have been shown to protect CMOS circuits from the deleterious effects of the natural space radiation environment. The IAuE is leading a program to incorporate these radiation-tolerance providing design techniques into a commercial standard cell library that will be used in conjunction with available Electronic Design Automation tools to produce space flight qualified microelectronics fabricated at modern commercial CMOS foundries.

Comprehensive Characterization of Extended Defects in Semiconductor Materials by a Scanning Electron Microscope.

PubMed

Hieckmann, Ellen; Nacke, Markus; Allardt, Matthias; Bodrov, Yury; Chekhonin, Paul; Skrotzki, Werner; Weber, Jörg

2016-05-28

Extended defects such as dislocations and grain boundaries have a strong influence on the performance of microelectronic devices and on other applications of semiconductor materials. However, it is still under debate how the defect structure determines the band structure, and therefore, the recombination behavior of electron-hole pairs responsible for the optical and electrical properties of the extended defects. The present paper is a survey of procedures for the spatially resolved investigation of structural and of physical properties of extended defects in semiconductor materials with a scanning electron microscope (SEM). Representative examples are given for crystalline silicon. The luminescence behavior of extended defects can be investigated by cathodoluminescence (CL) measurements. They are particularly valuable because spectrally and spatially resolved information can be obtained simultaneously. For silicon, with an indirect electronic band structure, CL measurements should be carried out at low temperatures down to 5 K due to the low fraction of radiative recombination processes in comparison to non-radiative transitions at room temperature. For the study of the electrical properties of extended defects, the electron beam induced current (EBIC) technique can be applied. The EBIC image reflects the local distribution of defects due to the increased charge-carrier recombination in their vicinity. The procedure for EBIC investigations is described for measurements at room temperature and at low temperatures. Internal strain fields arising from extended defects can be determined quantitatively by cross-correlation electron backscatter diffraction (ccEBSD). This method is challenging because of the necessary preparation of the sample surface and because of the quality of the diffraction patterns which are recorded during the mapping of the sample. The spatial resolution of the three experimental techniques is compared.

Comprehensive Characterization of Extended Defects in Semiconductor Materials by a Scanning Electron Microscope

PubMed Central

Hieckmann, Ellen; Nacke, Markus; Allardt, Matthias; Bodrov, Yury; Chekhonin, Paul; Skrotzki, Werner; Weber, Jörg

2016-01-01

Extended defects such as dislocations and grain boundaries have a strong influence on the performance of microelectronic devices and on other applications of semiconductor materials. However, it is still under debate how the defect structure determines the band structure, and therefore, the recombination behavior of electron-hole pairs responsible for the optical and electrical properties of the extended defects. The present paper is a survey of procedures for the spatially resolved investigation of structural and of physical properties of extended defects in semiconductor materials with a scanning electron microscope (SEM). Representative examples are given for crystalline silicon. The luminescence behavior of extended defects can be investigated by cathodoluminescence (CL) measurements. They are particularly valuable because spectrally and spatially resolved information can be obtained simultaneously. For silicon, with an indirect electronic band structure, CL measurements should be carried out at low temperatures down to 5 K due to the low fraction of radiative recombination processes in comparison to non-radiative transitions at room temperature. For the study of the electrical properties of extended defects, the electron beam induced current (EBIC) technique can be applied. The EBIC image reflects the local distribution of defects due to the increased charge-carrier recombination in their vicinity. The procedure for EBIC investigations is described for measurements at room temperature and at low temperatures. Internal strain fields arising from extended defects can be determined quantitatively by cross-correlation electron backscatter diffraction (ccEBSD). This method is challenging because of the necessary preparation of the sample surface and because of the quality of the diffraction patterns which are recorded during the mapping of the sample. The spatial resolution of the three experimental techniques is compared. PMID:27285177

Tuning the reactivity of semiconductor surfaces by functionalization with amines of different basicity

PubMed Central

Bent, Stacey F.; Kachian, Jessica S.; Rodríguez-Reyes, Juan Carlos F.; Teplyakov, Andrew V.

2011-01-01

Surface functionalization of semiconductors has been the backbone of the newest developments in microelectronics, energy conversion, sensing device design, and many other fields of science and technology. Over a decade ago, the notion of viewing the surface itself as a chemical reagent in surface reactions was introduced, and adding a variety of new functionalities to the semiconductor surface has become a target of research for many groups. The electronic effects on the substrate have been considered as an important consequence of chemical modification. In this work, we shift the focus to the electronic properties of the functional groups attached to the surface and their role on subsequent reactivity. We investigate surface functionalization of clean Si(100)-2 × 1 and Ge(100)-2 × 1 surfaces with amines as a way to modify their reactivity and to fine tune this reactivity by considering the basicity of the attached functionality. The reactivity of silicon and germanium surfaces modified with ethylamine (CH3CH2NH2) and aniline (C6H5NH2) is predicted using density functional theory calculations of proton attachment to the nitrogen of the adsorbed amine to differ with respect to a nucleophilic attack of the surface species. These predictions are then tested using a model metalorganic reagent, tetrakis(dimethylamido)titanium (((CH3)2N)4Ti, TDMAT), which undergoes a transamination reaction with sufficiently nucleophilic amines, and the reactivity tests confirm trends consistent with predicted basicities. The identity of the underlying semiconductor surface has a profound effect on the outcome of this reaction, and results comparing silicon and germanium are discussed. PMID:21068370

In vitro and in vivo evaluation of ultrananocrystalline diamond as an encapsulation layer for implantable microchips.

PubMed

Chen, Ying-Chieh; Tsai, Che-Yao; Lee, Chi-Young; Lin, I-Nan

2014-05-01

Thin ultrananocrystalline diamond (UNCD) films were evaluated for use as hermetic and bioinert encapsulating coatings for implantable microchips, where the reaction to UNCD in vitro and in vivo tissue was investigated. Leakage current tests showed that depositing UNCD coatings, which were conformally grown in (1% H2) Ar/CH4 plasma, on microchips rendered the surface electrochemically inactive, i.e. with a very low leakage current density (2.8×10(-5)Acm(-2) at -1V and 1.9×10(-3)Acm(-2) at ±5V) ex vivo. The impact of UNCD with different surface modifications on the growth and activation of macrophages was compared to that of standard-grade polystyrene. Macrophages attached to oxygen-terminated UNCD films down-regulated their production of cytokines and chemokines. Moreover, with UNCD-coated microchips, which were implanted subcutaneously into BALB/c mice for up to 3months, the tissue reaction and capsule formation was significantly decreased compared to the medical-grade titanium alloy Ti-6Al-4V and bare silicon. Additionally, the leakage current density, elicited by electrochemical activity, on silicon chips encapsulated in oxygen-terminated UNCD coatings remained at the low level of 2.5×10(-3)Acm(-2) at 5V for up to 3months in vivo, which is half the level of those encapsulated in hydrogen-terminated UNCD coatings. Thus, controlling the surface properties of UNCDs makes it possible to manipulate the in vivo functionality and stability of implantable devices so as to reduce the host inflammatory response following implantation. These observations suggest that oxygen-terminated UNCDs are promising candidates for use as encapsulating coatings for implantable microelectronic devices. Copyright © 2014 Acta Materialia Inc. Published by Elsevier Ltd. All rights reserved.

High-performance imaging of stem cells using single-photon emissions

NASA Astrophysics Data System (ADS)

Wagenaar, Douglas J.; Moats, Rex A.; Hartsough, Neal E.; Meier, Dirk; Hugg, James W.; Yang, Tang; Gazit, Dan; Pelled, Gadi; Patt, Bradley E.

2011-10-01

Radiolabeled cells have been imaged for decades in the field of autoradiography. Recent advances in detector and microelectronics technologies have enabled the new field of "digital autoradiography" which remains limited to ex vivo specimens of thin tissue slices. The 3D field-of-view (FOV) of single cell imaging can be extended to millimeters if the low energy (10-30 keV) photon emissions of radionuclides are used for single-photon nuclear imaging. This new microscope uses a coded aperture foil made of highly attenuating elements such as gold or platinum to form the image as a kind of "lens". The detectors used for single-photon emission microscopy are typically silicon detectors with a pixel pitch less than 60 μm. The goal of this work is to image radiolabeled mesenchymal stem cells in vivo in an animal model of tendon repair processes. Single-photon nuclear imaging is an attractive modality for translational medicine since the labeled cells can be imaged simultaneously with the reparative processes by using the dual-isotope imaging technique. The details our microscope's two-layer gold aperture and the operation of the energy-dispersive, pixellated silicon detector are presented along with the first demonstration of energy discrimination with a 57Co source. Cell labeling techniques have been augmented by genetic engineering with the sodium-iodide symporter, a type of reporter gene imaging method that enables in vivo uptake of free 99mTc or an iodine isotope at a time point days or weeks after the insertion of the genetically modified stem cells into the animal model. This microscopy work in animal research may expand to the imaging of reporter-enabled stem cells simultaneously with the expected biological repair process in human clinical trials of stem cell therapies.

Semiconductor solar cells: Recent progress in terrestrial applications

NASA Astrophysics Data System (ADS)

Avrutin, V.; Izyumskaya, N.; Morkoç, H.

2011-04-01

In the last decade, the photovoltaic industry grew at a rate exceeding 30% per year. Currently, solar-cell modules based on single-crystal and large-grain polycrystalline silicon wafers comprise more than 80% of the market. Bulk Si photovoltaics, which benefit from the highly advanced growth and fabrication processes developed for microelectronics industry, is a mature technology. The light-to-electric power conversion efficiency of the best modules offered on the market is over 20%. While there is still room for improvement, the device performance is approaching the thermodynamic limit of ˜28% for single-junction Si solar cells. The major challenge that the bulk Si solar cells face is, however, the cost reduction. The potential for price reduction of electrical power generated by wafer-based Si modules is limited by the cost of bulk Si wafers, making the electrical power cost substantially higher than that generated by combustion of fossil fuels. One major strategy to bring down the cost of electricity generated by photovoltaic modules is thin-film solar cells, whose production does not require expensive semiconductor substrates and very high temperatures and thus allows decreasing the cost per unit area while retaining a reasonable efficiency. Thin-film solar cells based on amorphous, microcrystalline, and polycrystalline Si as well as cadmium telluride and copper indium diselenide compound semiconductors have already proved their commercial viability and their market share is increasing rapidly. Another avenue to reduce the cost of photovoltaic electricity is to increase the cell efficiency beyond the Shockley-Queisser limit. A variety of concepts proposed along this avenue forms the basis of the so-called third generation photovoltaics technologies. Among these approaches, high-efficiency multi-junction solar cells based on III-V compound semiconductors, which initially found uses in space applications, are now being developed for terrestrial applications. In this article, we discuss the progress, outstanding problems, and environmental issues associated with bulk Si, thin-film, and high-efficiency multi-junction solar cells.

Silicone Polymer Composites for Thermal Protection System: Fiber Reinforcements and Microstructures

DTIC Science & Technology

2010-01-01

angles were tested. Detailed microstructural, mass loss, and peak erosion analyses were conducted on the phenolic -based matrix composite (control) and...silicone-based matrix composites to understand their protective mechanisms. Keywords silicone polymer matrix composites, phenolic polymer matrix...erosion analyses were conducted on the phenolic -based matrix composite (control) and silicone-based matrix composites to understand their protective

Rapid Solid-State Metathesis Routes to Nanostructured Silicon-Germainum

NASA Technical Reports Server (NTRS)

Rodriguez, Marc (Inventor); Kaner, Richard B. (Inventor); Bux, Sabah K. (Inventor); Fleurial, Jean-Pierre (Inventor)

2014-01-01

Methods for producing nanostructured silicon and silicon-germanium via solid state metathesis (SSM). The method of forming nanostructured silicon comprises the steps of combining a stoichiometric mixture of silicon tetraiodide (SiI4) and an alkaline earth metal silicide into a homogeneous powder, and initating the reaction between the silicon tetraiodide (SiI4) with the alkaline earth metal silicide. The method of forming nanostructured silicon-germanium comprises the steps of combining a stoichiometric mixture of silicon tetraiodide (SiI4) and a germanium based precursor into a homogeneous powder, and initiating the reaction between the silicon tetraiodide (SiI4) with the germanium based precursors.

A Bistable Microelectronic Circuit for Sensing Extremely Low Electric Field

DTIC Science & Technology

2010-01-01

potential system describing the ferromagnetic ma- terials employed in the fluxgate magnetometers .1 To give a clearer picture of the separations between...this behavior in a specific prototype system comprised of three unidirectionally coupled ferromagnetic cores, the basis of a coupled core fluxgate ... magnetometer . Another prototypical quartic poten- tial based system of coupled overdamped Duffing elements has been applied to describe the dynamics

USSR Report Machine Tools and Metalworking Equipment

DTIC Science & Technology

1986-01-24

meat -packing plants). In the past, the main emphasis on finished products in individual areas slowed down development and modernization, as well as...social effect . Also related to further improvement in the microelectronic base, micro and minicomputers is development work on the creation of a...more effectively as well as those being built; develop scientific technological and production cooperation; use achievements obtained as a result of

Delidding and resealing hybrid microelectronic packages

NASA Astrophysics Data System (ADS)

Luce, W. F.

1982-05-01

The objective of this single phase MM and T contract was to develop the manufacturing technology necessary for the precision removal (delidding) and replacement (resealing) of covers on hermetically sealed hybrid microelectronic packages. The equipment and processes developed provide a rework technique which does not degrade the reliability of the package of the enclosed circuitry. A qualification test was conducted on 88 functional hybrid packages, with excellent results. A petition will be filed, accompanied by this report, requesting Mil-M-38510 be amended to allow this rework method.

Electronics for better healthcare.

PubMed

Wolf, Bernhard; Herzog, Karolin

2013-06-01

Microelectronics and microsystem technology have changed our daily lives considerably in the past 50 years. Countless everyday objects contain microelectronic components. In healthcare up to the present, however, it has not been possible to make major alterations in introducing electronics and information technology that would lead to innovative improvements and greater transparency. This paper describes initial steps in diagnostics and oncological therapy including telematic healthcare systems which can, for example, assist patients with cardiovascular diseases and shows, through these areas, how electronics and microsystems technology can contribute to better healthcare.

Effects of rapid thermal annealing on crystallinity and Sn surface segregation of {{Ge}}_{1-{\\boldsymbol{x}}}{{Sn}}_{{\\boldsymbol{x}}} films on Si (100) and Si (111)

NASA Astrophysics Data System (ADS)

Miao, Yuan-Hao; Hu, Hui-Yong; Song, Jian-Jun; Xuan, Rong-Xi; Zhang, He-Ming

2017-12-01

Not Available Project supported by the National Natural Science Foundation of China (Grant Nos. 61474085 and 61704130), the Science Research Plan in Shaanxi Province, China (Grant No. 2016GY-085), the Opening Project of Key Laboratory of Microelectronic Devices & Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences (Grant No. 90109162905), and the Fundamental Research Funds for the Central Universities, China (Grant No. 61704130).

Displacement Damage Effects in Solar Cells: Mining Damage From the Microelectronics and Photonics Test Bed Space Experiment

NASA Technical Reports Server (NTRS)

Hardage, Donna (Technical Monitor); Walters, R. J.; Morton, T. L.; Messenger, S. R.

2004-01-01

The objective is to develop an improved space solar cell radiation response analysis capability and to produce a computer modeling tool which implements the analysis. This was accomplished through analysis of solar cell flight data taken on the Microelectronics and Photonics Test Bed experiment. This effort specifically addresses issues related to rapid technological change in the area of solar cells for space applications in order to enhance system performance, decrease risk, and reduce cost for future missions.

Microelectronic superconducting crossover and coil

DOEpatents

Wellstood, F.C.; Kingston, J.J.; Clarke, J.

1994-03-01

A microelectronic component comprising a crossover is provided comprising a substrate, a first high T[sub c] superconductor thin film, a second insulating thin film comprising SrTiO[sub 3]; and a third high T[sub c] superconducting film which has strips which crossover one or more areas of the first superconductor film. An in situ method for depositing all three films on a substrate is provided which does not require annealing steps and which can be opened to the atmosphere between depositions. 13 figures.

Status of backthinned AlGaN based focal plane arrays for deep-UV imaging

NASA Astrophysics Data System (ADS)

Reverchon, J.-L.; Lehoucq, G.; Truffer, J.-P.; Costard, E.; Frayssinet, E.; Semond, F.; Duboz, J.-Y.; Giuliani, A.; Réfrégiers, M.; Idir, M.

2017-11-01

The achievement of deep ultraviolet (UV) focal plane arrays (FPA) is required for both solar physics [1] and micro electronics industry. The success of solar mission (SOHO, STEREO [2], SDO [3]…), has shown the accuracy of imaging at wavelengths from 10 nm to 140 nm to reveal effects occurring in the sun corona. Deep UV steppers at 13 nm are another demanding imaging technology for the microelectronic industry in terms of uniformity and stability. A third application concerns beam shaping of Synchrotron lines [4]. Consequently, such wavelengths are of prime importance whereas the vacuum UV wavelengths are very difficult to detect due to the dramatic interaction of light with materials. The fast development of nitrides has given the opportunity to investigate AlGaN as a material for UV detection. Camera based on AlGaN present an intrinsic spectral selectivity and an extremely low dark current at room temperature. We have previously presented several FPA dedicated to deep UV based on 320 x 256 pixels of Schottky photodiodes with a pitch of 30 μm [4, 5]. AlGaN is grown on a silicon substrate instead of sapphire substrate only transparent down to 200 nm. After a flip-chip hybridization, silicon substrate and AlGaN basal layer was removed by dry etching. Then, the spectral responsivity of the FPA presented a quantum efficiency (QE) from 5% to 20% from 50 nm to 290 nm when removing the highly doped contact layer via a selective wet etching. This FPA suffered from a low uniformity incompatible with imaging, and a long time response due to variations of conductivity in the honeycomb. We also observed a low rejection of visible. It is probably due to the same honeycomb conductivity enhancement for wavelength shorter than 360 nm, i.e., the band gap of GaN. We will show hereafter an improved uniformity due to the use of a precisely ICP (Inductively Coupled Plasma) controlled process. The final membrane thickness is limited to the desertion layer. Neither access resistance limitation nor long response time are observed. QE varies from 5% at 50 nm to 15% at 6 nm (85% more when taking into account the filling factor). Consequently, we can propose prototypes concerning not only "solar blind" camera optimized for narrow band in the near UV range (between 280 nm and 260 nm), but also devices with spectral range extended in the deep UV (290 nm to 10 nm). Both detectors are available for an optical budget evaluation.

Integrated electronics and fluidic MEMS for bioengineering

NASA Astrophysics Data System (ADS)

Fok, Ho Him Raymond

Microelectromechanical systems (MEMS) and microelectronics have become enabling technologies for many research areas. This dissertation presents the use of fluidic MEMS and microelectronics for bioengineering applications. In particular, the versatility of MEMS and microelectronics is highlighted by the presentation of two different applications, one for in-vitro study of nano-scale dynamics during cell division and one for in-vivo monitoring of biological activities at the cellular level. The first application of an integrated system discussed in this dissertation is to utilize fluidic MEMS for studying dynamics in the mitotic spindle, which could lead to better chemotherapeutic treatments for cancer patients. Previous work has developed the use of electrokinetic phenomena on the surface of a glass-based platform to assemble microtubules, the building blocks of mitotic spindles. Nevertheless, there are two important limitations of this type of platform. First, an unconventional microfabrication process is necessary for the glass-based platform, which limits the utility of this platform. In order to overcome this limitation, in this dissertation a convenient microfluidic system is fabricated using a negative photoresist called SU-8. The fabrication process for the SU-8-based system is compatible with other fabrication techniques used in developing microelectronics, and this compatibility is essential for integrating electronics for studying dynamics in the mitotic spindle. The second limitation of the previously-developed glass-based platform is its lack of bio-compatibility. For example, microtubules strongly interact with the surface of the glass-based platform, thereby hindering the study of dynamics in the mitotic spindle. This dissertation presents a novel approach for assembling microtubules away from the surface of the platform, and a fabrication process is developed to assemble microtubules between two self-aligned thin film electrodes on thick SU-8 pedestals. This approach also allows the in-vitro model to mimic the three-dimensionality of the cellular mitotic spindle that is absent in previous work. The second application of an integrated bioengineering system discussed in this dissertation is to design and fabricate active electronics and sensors for an in-vivo application to monitor neural activity at the cellular level. Temperature sensors were chosen for a first demonstration. In order for temperature sensors to be able to be implanted into brain interfaces, it is necessary for these devices to be fabricated using processes that are compatible with bio-compatible substrates such as glass and plastic. This dissertation addresses this challenge by developing temperature sensors integrated with biasing circuitry using zinc oxide thin film transistors (TFTs) fabricated on polyimide substrates. The integrated sensors show good temperature sensitivity, which is critical for monitoring neural temperature at the cellular level. This dissertation also describes the unique requirements of encapsulating implantable electronics. For instance, encapsulation schemes must be designed in such a way that they both protect electronic devices from extracellular fluids and also do not interfere with the functionality of these devices. In this work, SU-8 is used as a convenient and effective encapsulation layer. Thermal engineering to prevent active electronics from overheating and to ensure accurate temperature measurement from temperature sensors is also discussed, and a synergistic encapsulation and thermal engineering combination is presented.

Semiconductors: Still a Wide Open Frontier for Scientists/Engineers

NASA Astrophysics Data System (ADS)

Seiler, David G.

1997-10-01

A 1995 Business Week article described several features of the explosive use of semiconductor chips today: ``Booming'' personal computer markets are driving high demand for microprocessors and memory chips; (2) New information superhighway markets will `ignite' sales of multimedia and communication chips; and (3) Demand for digital-signal-processing and data-compression chips, which speed up video and graphics, is `red hot.' A Washington Post article by Stan Hinden said that technology is creating an unstoppable demand for electronic elements. This ``digital pervasiveness'' means that a semiconductor chip is going into almost every high-tech product that people buy - cars, televisions, video recorders, telephones, radios, alarm clocks, coffee pots, etc. ``Semiconductors are everywhere.'' Silicon and compound semiconductors are absolutely essential and are pervasive enablers for DoD operations and systems. DoD's Critical Technologies Plan of 1991 says that ``Semiconductor materials and microelectronics are critically important and appropriately lead the list of critical defense technologies.'' These trends continue unabated. This talk describes some of the frontiers of semiconductors today and shows how scientists and engineers can effectively contribute to its advancement. Cooperative, multidisciplinary efforts are increasing. Specific examples will be given for scanning capacitance microscopy and thin-film metrology.

Microsystem technology as a road from macro to nanoworld.

PubMed

Grabiec, Piotr; Domański, Krzysztof; Janus, Paweł; Zaborowski, Michał; Jaroszewicz, Bogdan

2005-04-01

Tremendous progress of microelectronic technology observed within last 40 years is closely related to even more remarkable progress of technological tools. It is important to note however, that these new tools may be used for fabrication of diverse multifunctional structures as well. Such devices, called MEMS (Micro-Electro-Mechanical-System) and MOEMS (Micro-Electro-Opto-Mechanical-System) integrate microelectronic and micromechanical structures in one system enabling interdisciplinary application, with most interesting and prospective being bio-medical investigations. Development of these applications requires however cooperation of multidisciplinary team of specialists, covering broad range of physics, (bio) chemistry and electronics, not mentioning medical doctors and other medical specialists. Thus, dissemination, of knowledge about existing processing capabilities is of key importance. In this paper, examples of various applications of microelectronic technology for fabrication of Microsystems which may be used for medicine and chemistry, will be presented. Besides, information concerning a design and technology potential available in poland and new, emerging opportunities will be given.

Emerging epidemic in a growing industry: cigarette smoking among female micro-electronics workers in Taiwan.

PubMed

Lin, Y-P; Yen, L-L; Pan, L-Y; Chang, P-J; Cheng, T-J

2005-03-01

To explore the emerging tobacco epidemic in female workers in the growing micro-electronics industry of Taiwan. Workers were surveyed regarding their smoking status, sociodemographics and work characteristics. In total, 1950 female employees in two large micro-electronics companies in Taiwan completed the survey. Approximately 9.3% of the female employees were occasional or daily smokers at the time of the survey. The prevalence of smoking was higher in those aged 16-19 years (20.9%), those not married (12.9%), those with a high school education or less (11.7%), those employed by Company A (11.7%), shift workers (14.3%), and those who had been in their present employment for 1 year or less (13.6%). Results of multivariate adjusted logistic regression indicated that younger age, lower level of education, shorter periods of employment with the company and shift working were the important factors in determining cigarette smoking among the study participants. The odds ratio of being a daily smoker was similar to that of being a current smoker. Marital status was the only significant variable when comparing former smokers with current smokers. Smoking prevalence in female workers in the two micro-electronics companies studied was much higher than previous reports have suggested about female smoking prevalence in Taiwan and China. We suggest that smoking is no longer a 'male problem' in Taiwan. Future smoking cessation and prevention programmes should target young working women as well as men.

Implications of Pb-free microelectronics assembly in aerospace applications

NASA Technical Reports Server (NTRS)

Shapiro, A. A.; Bonner, J. K.; Ogunseitan, D.; Saphores, J. D.; Schoenung, J.

2003-01-01

The commercial microelectronics industry is rapidly moving to completely Pb-free assembly strategies within the next decade. This trend is being driven by existing and proposed legislation in Europe and in Japan. The microelectronics industry has become truly global, as indicated by major U .S. firms who already adopted Pb-free implementation programs. Among these forward-looking firms are AT&T, IBM, Motorola, HP and Intel to name a few.Following Moore's law, advances in microelectronics are happening very rapidly. In many cases, commercial industry is ahead of the aerospace sector in technology. Progress by commercial industry, along with cost, drives the use of Commercial Off-The-Shelf (COTS) parts for military and space applications. We can thus anticipate that the aerospace industry will, at some point, be forced to use Pb-free components and subsystems as part of their standard business practices. In this paper we attempt to provide a snapshot of the commercial industry trends and how they may impact electronics in the aerospace environment. In addition, we also look at different strategies for implementation. Finally we present data collected on a recent NASA project to focus on finding suitable alternatives to eutectic tin-lead solders and solder pastes. The world is moving toward implementation of environmentally friendly manufacturing techniques. The aerospace industry will be forced to deal with issues related with Pb free assembly, either by availability or legislation. This paper provides some insight into some of the tradeoffs that should be considered.

Stationary phase deposition based on onium salts

DOEpatents

Wheeler, David R [Albuquerque, NM; Lewis, Patrick R [Albuquerque, NM; Dirk, Shawn M [Albuquerque, NM; Trudell, Daniel E [Albuquerque, NM

2008-01-01

Onium salt chemistry can be used to deposit very uniform thickness stationary phases on the wall of a gas chromatography column. In particular, the stationary phase can be bonded to non-silicon based columns, especially microfabricated metal columns. Non-silicon microfabricated columns may be manufactured and processed at a fraction of the cost of silicon-based columns. In addition, the method can be used to phase-coat conventional capillary columns or silicon-based microfabricated columns.

Radiation Effects and Hardening Techniques for Spacecraft Microelectronics

NASA Astrophysics Data System (ADS)

Gambles, J. W.; Maki, G. K.

2002-01-01

The natural radiation from the Van Allen belts, solar flares, and cosmic rays found outside of the protection of the earth's atmosphere can produce deleterious effects on microelectronics used in space systems. Historically civil space agencies and the commercial satellite industry have been able to utilize components produced in special radiation hardened fabrication process foundries that were developed during the 1970s and 1980s under sponsorship of the Departments of Defense (DoD) and Energy (DoE). In the post--cold war world the DoD and DoE push to advance the rad--hard processes has waned. Today the available rad--hard components lag two-plus technology node generations behind state- of-the-art commercial technologies. As a result space craft designers face a large performance gap when trying to utilize available rad--hard components. Compounding the performance gap problems, rad--hard components are becoming increasingly harder to get. Faced with the economic pitfalls associated with low demand versus the ever increasing investment required for integrated circuit manufacturing equipment most sources of rad--hard parts have simply exited this market in recent years, leaving only two domestic US suppliers of digital rad--hard components. This paper summarizes the radiation induced mechanisms that can cause digital microelectronics to fail in space, techniques that can be applied to mitigate these failure mechanisms, and ground based testing used to validate radiation hardness/tolerance. The radiation hardening techniques can be broken down into two classes, Hardness By Process (HBP) and Hardness By Design (HBD). Fortunately many HBD techniques can be applied to commercial fabrication processes providing space craft designer with radiation tolerant Application Specific Integrated Circuits (ASICs) that can bridge the performance gap between the special HBP foundries and the commercial state-of-the-art performance.

Multiscale Modeling of Novel Carbon Nanotube/Copper-Composite Material Used in Microelectronics

NASA Astrophysics Data System (ADS)

Awad, Ibrahim; Ladani, Leila

2016-06-01

Current carrying capacity is one of the elements that hinders further miniaturization of Copper (Cu) interconnects. Therefore, there is a need to propose new materials with higher ampacity (current carrying capacity) that have the potential to replace Cu. Experimental observations have shown that Carbon Nanotube (CNT)/Cu-composite material has a hundredfold ampacity of Cu, which makes it a good candidate to replace Cu. However, sufficient information about the mechanical behavior of the novel CNT/Cu-composite is not available. In the current paper, the CNT/Cu-composite is utilized to construct Through Silicon Via (TSV). The mechanical behavior, specifically the fatigue life, of the CNT/Cu-TSV is evaluated by applying a multiscale modeling approach. Molecular Dynamics (MD) simulations are conducted to evaluate the tensile strength and the coefficient of thermal expansion of CNTs. MD simulation is also used to determine the interface behavior between CNTs and Cu. MD simulation results are integrated into Finite Element analysis at the micro-level to estimate the fatigue life of the CNT/Cu-TSV. A comparison is made with base material; Cu. CNTs addition has redistributed the plastic deformation in Cu to occur at two different locations (Si/Cu interface and Cu/CNT interface) instead of only one location (Si/Cu interface) in the case of Cu-only-TSV. Thus, the maximum equivalent plastic strain has been alleviated in the CNT/Cu-TSV. Accordingly, CNT/Cu-TSV has shown a threefold increase in the fatigue life. This is a solid indication of the improvement in the fatigue life that is attributed to the addition of CNTs.

Design and fabrication of zeolite macro- and micromembranes

NASA Astrophysics Data System (ADS)

Chau, Lik Hang Joseph

2001-07-01

The chemical nature of the support surface influences zeolite nucleation, crystal growth and elm adhesion. It had been demonstrated that chemical modification of support surface can significantly alter the zeolite film and has a good potential for large-scale applications for zeolite membrane production. The incorporation of titanium and vanadium metal ions into the structural framework of MFI zeolite imparts the material with catalytic properties. The effects of silica and metal (i.e., Ti and V) content, template concentration and temperature on the zeolite membrane growth and morphology were investigated. Single-gas permeation experiments were conducted for noble gases (He and Ar), inorganic gases (H2, N2, SF6) and hydrocarbons (methane, n-C4, i-C4) to determine the separation performance of these membranes. Using a new fabrication method based on microelectronic fabrication and zeolite thin film technologies, complex microchannel geometry and network (<5 mum), as well as zeolite arrays (<10 mum) were successfully fabricated onto highly orientated supported zeolite films. The zeolite micropatterns were stable even after repeated thermal cycling between 303 K and 873 K for prolonged periods of time. This work also demonstrates that zeolites (i.e., Sil-1, ZSM-5 and TS-1) can be employed as catalyst, membrane or structural materials in miniature chemical devices. Traditional semiconductor fabrication technology was employed in micromachining the device architecture. Four strategies for the manufacture of zeolite catalytic microreactors were discussed: zeolite powder coating, uniform zeolite film growth, localized zeolite growth, and etching of zeolite-silicon composite film growth inhibitors. Silicalite-1 was also prepared as free-standing membrane for zeolite membrane microseparators.

Selected aspects of microelectronics technology and applications: Numerically controlled machine tools. Technology trends series no. 2

NASA Astrophysics Data System (ADS)

Sigurdson, J.; Tagerud, J.

1986-05-01

A UNIDO publication about machine tools with automatic control discusses the following: (1) numerical control (NC) machine tool perspectives, definition of NC, flexible manufacturing systems, robots and their industrial application, research and development, and sensors; (2) experience in developing a capability in NC machine tools; (3) policy issues; (4) procedures for retrieval of relevant documentation from data bases. Diagrams, statistics, bibliography are included.

A novel monolithic piezoelectric actuated flexure-mechanism based wire clamp for microelectronic device packaging.

PubMed

Liang, Cunman; Wang, Fujun; Tian, Yanling; Zhao, Xingyu; Zhang, Hongjie; Cui, Liangyu; Zhang, Dawei; Ferreira, Placid

2015-04-01

A novel monolithic piezoelectric actuated wire clamp is presented in this paper to achieve fast, accurate, and robust microelectronic device packaging. The wire clamp has compact, flexure-based mechanical structure and light weight. To obtain large and robust jaw displacements and ensure parallel jaw grasping, a two-stage amplification composed of a homothetic bridge type mechanism and a parallelogram leverage mechanism was designed. Pseudo-rigid-body model and Lagrange approaches were employed to conduct the kinematic, static, and dynamic modeling of the wire clamp and optimization design was carried out. The displacement amplification ratio, maximum allowable stress, and natural frequency were calculated. Finite element analysis (FEA) was conducted to evaluate the characteristics of the wire clamp and wire electro discharge machining technique was utilized to fabricate the monolithic structure. Experimental tests were carried out to investigate the performance and the experimental results match well with the theoretical calculation and FEA. The amplification ratio of the clamp is 20.96 and the working mode frequency is 895 Hz. Step response test shows that the wire clamp has fast response and high accuracy and the motion resolution is 0.2 μm. High speed precision grasping operations of gold and copper wires were realized using the wire clamper.

Vacuum microelectronics for beam power and rectennas

NASA Technical Reports Server (NTRS)

Gray, Henry F.

1989-01-01

Vacuum Microelectronic devices can be described as vacuum transistors or micro-miniature vacuum tubes, as one chooses. The fundamental reason behind this new technology is the very large current densities available from field emitters, namely as high as 10(8) A/sq cm. Array current densities as high as 1000 A/sq cm have been measured. Total electron transit times from source to drain for 1 micron feature size devices have been predicted to be about 150fs. This very short transit time implies the possibility of submillimeter wave transmitters and rectennas in devices which can operate with reasonably high voltages and which are small in size and are lightweight. In addition, they are expected to be extremely radiation hard and very temperature insensitive. That is, they are expected to have radiation hardness characteristics similar to vacuum tubes, and both the high temperature and low temperature limits should be determined by the package. That is, there should be no practical intrinsic temperature or carrier freezeout problems for devices based on metals or composites. But the technology is difficult to implement at the present time because it is based on 300 to 500 angstrom radius field emitters which must be relatively uniform. There is also the need to understand the non-equilibrium transport physics in the near-surface regions of the field emitters.

Field-programmable lab-on-a-chip based on microelectrode dot array architecture.

PubMed

Wang, Gary; Teng, Daniel; Lai, Yi-Tse; Lu, Yi-Wen; Ho, Yingchieh; Lee, Chen-Yi

2014-09-01

The fundamentals of electrowetting-on-dielectric (EWOD) digital microfluidics are very strong: advantageous capability in the manipulation of fluids, small test volumes, precise dynamic control and detection, and microscale systems. These advantages are very important for future biochip developments, but the development of EWOD microfluidics has been hindered by the absence of: integrated detector technology, standard commercial components, on-chip sample preparation, standard manufacturing technology and end-to-end system integration. A field-programmable lab-on-a-chip (FPLOC) system based on microelectrode dot array (MEDA) architecture is presented in this research. The MEDA architecture proposes a standard EWOD microfluidic component called 'microelectrode cell', which can be dynamically configured into microfluidic components to perform microfluidic operations of the biochip. A proof-of-concept prototype FPLOC, containing a 30 × 30 MEDA, was developed by using generic integrated circuits computer aided design tools, and it was manufactured with standard low-voltage complementary metal-oxide-semiconductor technology, which allows smooth on-chip integration of microfluidics and microelectronics. By integrating 900 droplet detection circuits into microelectrode cells, the FPLOC has achieved large-scale integration of microfluidics and microelectronics. Compared to the full-custom and bottom-up design methods, the FPLOC provides hierarchical top-down design approach, field-programmability and dynamic manipulations of droplets for advanced microfluidic operations.

Soft-Matter Printed Circuit Board with UV Laser Micropatterning.

PubMed

Lu, Tong; Markvicka, Eric J; Jin, Yichu; Majidi, Carmel

2017-07-05

When encapsulated in elastomer, micropatterned traces of Ga-based liquid metal (LM) can function as elastically deformable circuit wiring that provides mechanically robust electrical connectivity between solid-state elements (e.g., transistors, processors, and sensor nodes). However, LM-microelectronics integration is currently limited by challenges in rapid fabrication of LM circuits and the creation of vias between circuit terminals and the I/O pins of packaged electronics. In this study, we address both with a unique layup for soft-matter electronics in which traces of liquid-phase Ga-In eutectic (EGaIn) are patterned with UV laser micromachining (UVLM). The terminals of the elastomer-sealed LM circuit connect to the surface mounted chips through vertically aligned columns of EGaIn-coated Ag-Fe 2 O 3 microparticles that are embedded within an interfacial elastomer layer. The processing technique is compatible with conventional UVLM printed circuit board (PCB) prototyping and exploits the photophysical ablation of EGaIn on an elastomer substrate. Potential applications to wearable computing and biosensing are demonstrated with functional implementations in which soft-matter PCBs are populated with surface-mounted microelectronics.

Heuristic method of fabricating counter electrodes in dye-sensitized solar cells based on a PEDOT:PSS layer as a catalytic material

NASA Astrophysics Data System (ADS)

Edalati, Sh; Houshangi far, A.; Torabi, N.; Baneshi, Z.; Behjat, A.

2017-02-01

Poly(3,4-ethylendioxythiophene):poly(styrene sulfonate) (PEDOT:PSS) was deposited on a fluoride-doped tin oxide glass substrate using a heuristic method to fabricate platinum-free counter electrodes for dye-sensitized solar cells (DSSCs). In this heuristic method a thin layer of PEDOT:PPS is obtained by spin coating the PEDOT:PSS on a Cu substrate and then removing the substrate with FeCl3. The characteristics of the deposited PEDOT:PSS were studied by energy dispersive x-ray analysis and scanning electron microscopy, which revealed the micro-electronic specifications of the cathode. The aforementioned DSSCs exhibited a solar conversion efficiency of 3.90%, which is far higher than that of DSSCs with pure PEDOT:PSS (1.89%). This enhancement is attributed not only to the micro-electronic specifications but also to the HNO3 treatment through our heuristic method. The results of cyclic voltammetry, electrochemical impedance spectroscopy (EIS) and Tafel polarization plots show the modified cathode has a dual function, including excellent conductivity and electrocatalytic activity for iodine reduction.

A novel three-jet microreactor for localized metal-organic chemical vapour deposition of gallium arsenide: design and simulation

NASA Astrophysics Data System (ADS)

Konakov, S. A.; Krzhizhanovskaya, V. V.

2016-08-01

We present a novel three-jet microreactor design for localized deposition of gallium arsenide (GaAs) by low-pressure Metal-Organic Chemical Vapour Deposition (MOCVD) for semiconductor devices, microelectronics and solar cells. Our approach is advantageous compared to the standard lithography and etching technology, since it preserves the nanostructure of the deposited material, it is less time-consuming and less expensive. We designed two versions of reactor geometry with a 10-micron central microchannel for precursor supply and with two side jets of a dilutant to control the deposition area. To aid future experiments, we performed computational modeling of a simplified-geometry (twodimensional axisymmetric) microreactor, based on Navier-Stokes equations for a laminar flow of chemically reacting gas mixture of Ga(CH3)3-AsH3-H2. Simulation results show that we can achieve a high-rate deposition (over 0.3 μm/min) on a small area (less than 30 μm diameter). This technology can be used in material production for microelectronics, optoelectronics, photovoltaics, solar cells, etc.

All-gas-phase synthesis of UiO-66 through modulated atomic layer deposition

PubMed Central

Lausund, Kristian Blindheim; Nilsen, Ola

2016-01-01

Thin films of stable metal-organic frameworks (MOFs) such as UiO-66 have enormous application potential, for instance in microelectronics. However, all-gas-phase deposition techniques are currently not available for such MOFs. We here report on thin-film deposition of the thermally and chemically stable UiO-66 in an all-gas-phase process by the aid of atomic layer deposition (ALD). Sequential reactions of ZrCl4 and 1,4-benzenedicarboxylic acid produce amorphous organic–inorganic hybrid films that are subsequently crystallized to the UiO-66 structure by treatment in acetic acid vapour. We also introduce a new approach to control the stoichiometry between metal clusters and organic linkers by modulation of the ALD growth with additional acetic acid pulses. An all-gas-phase synthesis technique for UiO-66 could enable implementations in microelectronics that are not compatible with solvothermal synthesis. Since this technique is ALD-based, it could also give enhanced thickness control and the possibility to coat irregular substrates with high aspect ratios. PMID:27876797

Cytotoxicity and mitogenicity assays with real-time and label-free monitoring of human granulosa cells with an impedance-based signal processing technology intergrating micro-electronics and cell biology.

PubMed

Oktem, Ozgur; Bildik, Gamze; Senbabaoglu, Filiz; Lack, Nathan A; Akin, Nazli; Yakar, Feridun; Urman, Defne; Guzel, Yilmaz; Balaban, Basak; Iwase, Akira; Urman, Bulent

2016-04-01

A recently developed technology (xCelligence) integrating micro-electronics and cell biology allows real-time, uninterrupted and quantitative analysis of cell proliferation, viability and cytotoxicity by measuring the electrical impedance of the cell population in the wells without using any labeling agent. In this study we investigated if this system is a suitable model to analyze the effects of mitogenic (FSH) and cytotoxic (chemotherapy) agents with different toxicity profiles on human granulosa cells in comparison to conventional methods of assessing cell viability, DNA damage, apoptosis and steroidogenesis. The system generated the real-time growth curves of the cells, and determined their doubling times, mean cell indices and generated dose-response curves after exposure to cytotoxic and mitogenic stimuli. It accurately predicted the gonadotoxicity of the drugs and distinguished less toxic agents (5-FU and paclitaxel) from more toxic ones (cisplatin and cyclophosphamide). This platform can be a useful tool for specific end-point assays in reproductive toxicology. Copyright © 2015 Elsevier Inc. All rights reserved.

Process for strengthening silicon based ceramics

DOEpatents

Kim, Hyoun-Ee; Moorhead, A. J.

1993-01-01

A process for strengthening silicon based ceramic monolithic materials and omposite materials that contain silicon based ceramic reinforcing phases that requires that the ceramic be exposed to a wet hydrogen atmosphere at about 1400.degree. C. The process results in a dense, tightly adherent silicon containing oxide layer that heals, blunts , or otherwise negates the detrimental effect of strength limiting flaws on the surface of the ceramic body.

Process for strengthening silicon based ceramics

DOEpatents

Kim, Hyoun-Ee; Moorhead, A. J.

1993-04-06

A process for strengthening silicon based ceramic monolithic materials and omposite materials that contain silicon based ceramic reinforcing phases that requires that the ceramic be exposed to a wet hydrogen atmosphere at about 1400.degree. C. The process results in a dense, tightly adherent silicon containing oxide layer that heals, blunts , or otherwise negates the detrimental effect of strength limiting flaws on the surface of the ceramic body.

Fighting blindness with microelectronics.

PubMed

Zrenner, Eberhart

2013-11-06

There is no approved cure for blindness caused by degeneration of the photoreceptor cells of the retina. However, there has been encouraging progress with attempts to restore vision using microelectronic retinal implant devices. Yet many questions remain to be addressed. Where is the best location to implant multielectrode arrays? How can spatial and temporal resolution be improved? What are the best ways to ensure the safety and longevity of these devices? Will color vision be possible? This Perspective discusses the current state of the art of retinal implants and attempts to address some of the outstanding questions.

Space, Atmospheric, and Terrestrial Radiation Environments

NASA Technical Reports Server (NTRS)

Barth, Janet L.; Dyer, C. S.; Stassinopoulos, E. G.

2003-01-01

The progress on developing models of the radiation environment since the 1960s is reviewed with emphasis on models that can be applied to predicting the performance of microelectronics used in spacecraft and instruments. Space, atmospheric, and ground environments are included. It is shown that models must be adapted continually to account for increased understanding of the dynamics of the radiation environment and the changes in microelectronics technology. The IEEE Nuclear and Space Radiation Effects Conference is a vital forum to report model progress to the radiation effects research community.

High-speed high-efficiency 500-W cw CO2 laser hermetization of metal frames of microelectronics devices

NASA Astrophysics Data System (ADS)

Levin, Andrey V.

1996-04-01

High-speed, efficient method of laser surface treatment has been developed using (500 W) cw CO2 laser. The principal advantages of CO2 laser surface treatment in comparison with solid state lasers are the basis of the method. It has been affirmed that high efficiency of welding was a consequence of the fundamental properties of metal-IR-radiation (10,6 mkm) interaction. CO2 laser hermetization of metal frames of microelectronic devices is described as an example of the proposed method application.

Microelectronic superconducting device with multi-layer contact

DOEpatents

Wellstood, Frederick C.; Kingston, John J.; Clarke, John

1993-01-01

A microelectronic component comprising a crossover is provided comprising a substrate, a first high T.sub.c superconductor thin film, a second insulating thin film comprising SrTiO.sub.3 ; and a third high T.sub.c superconducting film which has strips which crossover one or more areas of the first superconductor film. An insitu method for depositing all three films on a substrate is provided which does not require annealing steps. The photolithographic process is used to separately pattern the high T.sub.c superconductor thin films.

A software upgrade method for micro-electronics medical implants.

PubMed

Cao, Yang; Hao, Hongwei; Xue, Lin; Li, Luming; Ma, Bozhi

2006-01-01

A software upgrade method for micro-electronics medical implants is designed to enhance the devices' function or renew the software if there are some bugs found, the software updating or some memory units disabled. The implants needn't be replaced by operations if the faults can be corrected through reprogramming, which reduces the patients' pain and improves the safety effectively. This paper introduces the software upgrade method using in-application programming (IAP) and emphasizes how to insure the system, especially the implanted part's reliability and stability while upgrading.

A Eu/Tb-mixed MOF for luminescent high-temperature sensing

NASA Astrophysics Data System (ADS)

Wang, Huizhen; Zhao, Dian; Cui, Yuangjing; Yang, Yu; Qian, Guodong

2017-02-01

Temperature measurements and thermal mapping using luminescent MOF operating in the high-temperature range are of great interest in the micro-electronic diagnosis. In this paper, we report a thermostable Eu/Tb-mixed MOF Eu0.37Tb0.63-BTC-a exhibiting strong luminescence at elevated temperature, which can serve as a ratiometric luminescent thermometer for high-temperature range. The high-temperature operating range (313-473 K), high relative sensitivity and accurate temperature resolution, make such a Eu/Tb-mixed MOF useful for micro-electronic diagnosis.

Microelectronic superconducting device with multi-layer contact

DOEpatents

Wellstood, F.C.; Kingston, J.J.; Clarke, J.

1993-10-26

A microelectronic component comprising a crossover is provided comprising a substrate, a first high T[sub c] superconductor thin film, a second insulating thin film comprising SrTiO[sub 3] ; and a third high T[sub c] superconducting film which has strips which crossover one or more areas of the first superconductor film. An in situ method for depositing all three films on a substrate is provided which does not require annealing steps. The photolithographic process is used to separately pattern the high T[sub c] superconductor thin films. 14 figures.

Development of silicon grisms and immersion gratings for high-resolution infrared spectroscopy

NASA Astrophysics Data System (ADS)

Ge, Jian; McDavitt, Daniel L.; Bernecker, John L.; Miller, Shane; Ciarlo, Dino R.; Kuzmenko, Paul J.

2002-01-01

We report new results on silicon grism and immersion grating development using photolithography and anisotropic chemical etching techniques, which include process recipe finding, prototype grism fabrication, lab performance evaluation and initial scientific observations. The very high refractive index of silicon (n=3.4) enables much higher dispersion power for silicon-based gratings than conventional gratings, e.g. a silicon immersion grating can offer a factor of 3.4 times the dispersion of a conventional immersion grating. Good transmission in the infrared (IR) allows silicon-based gratings to operate in the broad IR wavelength regions (~1- 10 micrometers and far-IR), which make them attractive for both ground and space-based spectroscopic observations. Coarser gratings can be fabricated with these new techniques rather than conventional techniques, allowing observations at very high dispersion orders for larger simultaneous wavelength coverage. We have found new etching techniques for fabricating high quality silicon grisms with low wavefront distortion, low scattered light and high efficiency. Particularly, a new etching process using tetramethyl ammonium hydroxide (TMAH) is significantly simplifying the fabrication process on large, thick silicon substrates, while providing comparable grating quality to our traditional potassium hydroxide (KOH) process. This technique is being used for fabricating inch size silicon grisms for several IR instruments and is planned to be used for fabricating ~ 4 inch size silicon immersion gratings later. We have obtained complete K band spectra of a total of 6 T Tauri and Ae/Be stars and their close companions at a spectral resolution of R ~ 5000 using a silicon echelle grism with a 5 mm pupil diameter at the Lick 3m telescope. These results represent the first scientific observations conducted by the high-resolution silicon grisms, and demonstrate the extremely high dispersing power of silicon- based gratings. The future of silicon-based grating applications in ground and space-based IR instruments is promising. Silicon immersion gratings will make very high-resolution spectroscopy (R>100,000) feasible with compact instruments for implementation on large telescopes. Silicon grisms will offer an efficient way to implement low-cost medium to high resolution IR spectroscopy (R~ 1000-50000) through the conversion of existing cameras into spectrometers by locating a grism in the instrument's pupil location.

Synthesis and devolatilization of M-97 NVB silicone gum compounded into silica reinforced silicone base

DOE Office of Scientific and Technical Information (OSTI.GOV)

Schneider, J.W.

1986-06-01

Silica reinforced silicon bases having 0.31 weight percent vinyl content were prepared by using a blend of low and high vinyl content devolatilized M-97 NVB silicone gum. The M-97 NVB is a custom dimethyl-, diphenyl-, methylvinylsiloxane gum. The silicon gum was devolatilized to evaluate the anticipated improved handling characteristics. Previous procured batches of M-97 NVB had not been devolatilized and difficult handling problems were encountered. The synthesis, devolatilization, and compound processes for the M-97 NVB silicone gum are discussed.

Etching process for improving the strength of a laser-machined silicon-based ceramic article

DOEpatents

Copley, Stephen M.; Tao, Hongyi; Todd-Copley, Judith A.

1991-01-01

A process for improving the strength of laser-machined articles formed of a silicon-based ceramic material such as silicon nitride, in which the laser-machined surface is immersed in an etching solution of hydrofluoric acid and nitric acid for a duration sufficient to remove substantially all of a silicon film residue on the surface but insufficient to allow the solution to unduly attack the grain boundaries of the underlying silicon nitride substrate. This effectively removes the silicon film as a source of cracks that otherwise could propagate downwardly into the silicon nitride substrate and significantly reduce its strength.

Etching process for improving the strength of a laser-machined silicon-based ceramic article

DOEpatents

Copley, S.M.; Tao, H.; Todd-Copley, J.A.

1991-06-11

A process is disclosed for improving the strength of laser-machined articles formed of a silicon-based ceramic material such as silicon nitride, in which the laser-machined surface is immersed in an etching solution of hydrofluoric acid and nitric acid for a duration sufficient to remove substantially all of a silicon film residue on the surface but insufficient to allow the solution to unduly attack the grain boundaries of the underlying silicon nitride substrate. This effectively removes the silicon film as a source of cracks that otherwise could propagate downwardly into the silicon nitride substrate and significantly reduce its strength. 1 figure.

Process for strengthening aluminum based ceramics and material

DOEpatents

Moorhead, Arthur J.; Kim, Hyoun-Ee

2000-01-01

A process for strengthening aluminum based ceramics is provided. A gaseous atmosphere consisting essentially of silicon monoxide gas is formed by exposing a source of silicon to an atmosphere consisting essentially of hydrogen and a sufficient amount of water vapor. The aluminum based ceramic is exposed to the gaseous silicon monoxide atmosphere for a period of time and at a temperature sufficient to produce a continuous, stable silicon-containing film on the surface of the aluminum based ceramic that increases the strength of the ceramic.

Durable crystalline Si photovoltaic modules based on silicone-sheet encapsulants

NASA Astrophysics Data System (ADS)

Hara, Kohjiro; Ohwada, Hiroto; Furihata, Tomoyoshi; Masuda, Atsushi

2018-02-01

Crystalline Si photovoltaic (PV) modules were fabricated with sheets of poly(dimethylsiloxane) (silicone) as an encapsulant. The long-term durability of the silicone-encapsulated PV modules was experimentally investigated. The silicone-based modules enhanced the long-term durability against potential-induced degradation (PID) and a damp-heat (DH) condition at 85 °C with 85% relative humidity (RH). In addition, we designed and fabricated substrate-type Si PV modules based on the silicone encapsulant and an Al-alloy plate as the substratum, which demonstrated high impact resistance and high incombustible performance. The high chemical stability, high volume resistivity, rubber-like elasticity, and incombustibility of the silicone encapsulant resulted in the high durability of the modules. Our results indicate that silicone is an attractive encapsulation material, as it improves the long-term durability of crystalline Si PV modules.

MOEMs devices for future astronomical instrumentation in space

NASA Astrophysics Data System (ADS)

Zamkotsian, Frédéric; Liotard, Arnaud; Lanzoni, Patrick; ElHadi, Kacem; Waldis, Severin; Noell, Wilfried; de Rooij, Nico; Conedera, Veronique; Fabre, Norbert; Muratet, Sylvaine; Camon, Henri

2017-11-01

Based on the micro-electronics fabrication process, Micro-Opto-Electro-Mechanical Systems (MOEMS) are under study in order to be integrated in next-generation astronomical instruments for ground-based and space telescopes. Their main advantages are their compactness, scalability, specific task customization using elementary building blocks, and remote control. At Laboratoire d'Astrophysique de Marseille, we are engaged since several years in the design, realization and characterization of programmable slit masks for multi-object spectroscopy and micro-deformable mirrors for wavefront correction. First prototypes have been developed and show results matching with the requirements.

Synthesis of tin, silver and their alloy nanoparticles for lead-free interconnect applications

NASA Astrophysics Data System (ADS)

Jiang, Hongjin

SnPb solders have long been used as interconnect materials in microelectronic packaging. Due to the health threat of lead to human beings, the use of lead-free interconnect materials is imperative. Three kinds of lead-free interconnect materials are being investigated, namely lead-free metal solders (SnAg, SnAgCu, etc.), electrically conductive adhesives (ECAs) and carbon nanotubes (CNTs). However, there are still limitations for the full utilization of these lead-free interconnect materials in the microelectronic packaging, such as higher melting point of lead-free metal solders, lower electrical conductivity of the ECAs and poor adhesion of CNTs to substrates. This thesis is devoted to the research and development of low processing temperature lead-free interconnect materials for microelectronic packaging applications with an emphasis on fundamental studies of nanoparticles synthesis, dispersion and oxidation prevention, and nanocomposites fabrication. Oxide-free tin (Sn), tin/silver (96.5Sn3.5Ag) and tin/silver/copper (96.5Sn3.0Ag0.5Cu) alloy nanoparticles with different sizes were synthesized by a low temperature chemical reduction method. Both size dependent melting point and latent heat of fusion of the synthesized nanoparticles were obtained. The nano lead-free solder pastes/composites created by dispersing the SnAg or SnAgCu alloy nanoparticles into an acidic type flux spread and wet on the cleaned copper surface at 220 to 230°C. This study demonstrated the feasibility of nano sized SnAg or SnAgCu alloy particle pastes for low processing temperature lead-free interconnect applications in microelectronic packaging.

Fabrication et caracterisation de cristaux photoniques pour exaltation de fluorescence

NASA Astrophysics Data System (ADS)

Gascon, Annabelle

2011-12-01

In today's world, there is a pressing need for point-of-care molecular analysis that is fast, inexpensive and transportable. Lab-on-a- chips are designed to fulfill that need. They are micro-electromechanical systems (MEMS), fabricated with microelectronic techniques, that use the analytes physical properties to detect their presence in liquid samples. This detection can be performed by attaching the analyte to quantum dots. These quantum dots are semiconducting nanoparticles with narrow fluorescence band. In our project, we use a tuneable system with a two-slab photonic crystal that serves as a tuneable optical filter, detecting the presence and wavelength of these quantum dots. Photonic crystals are dielectrics with a variable refractive index, with a period near the visible light wavelength. They are called photonic crystals because they have a photonic band gap just as atomic crystals, periodic structure of atoms, have an electronic band gap. They are photonic because photons instead of electrons propagate through them. They can also enhance fluorescence from quantum dots at the photonic crystals guided resonance wavelength. My project objectives are to: (1) Fabricate two-slab photonic crystal, (2) Characterize photonic crystals, (3) Place quantum dots on photonic crystals, (4) Measure fluorescence enhancement. The device made during this project consists of a silicon wafer on which were deposited a 200 nm silicon nitride layer, then a 200 nm silicon dioxide layer and finally another 200 nm silicon nitride layer. An electron-beam lithography defines the photonic crystals and the MEMS. The photonic crystals are square lattices of holes 180 nm in diameter, at a period of 460 nm, etched through the two silicon nitride slabs. The two slabs are etched in a single step of Reactive Ion Etching (RIE). Then, the silicon under the photonic crystal is etched from the backside up to the nitride by deep-RIE. Finally, the oxide layer is removed in order to completely suspend the two-slab photonic crystal. The M EMS can change the gap between the two slabs in order to tune the guided resonance wavelength. An optical set-up is used to trace the photonic crystals transmission and reflection spectrum, in order to know the guided resonance position. A supercontinuum source illuminates the device at a normal incidence angle for wavelength between 400 nm and 800 nm. High-resolution spectra are obtained with a CCD camera spectrometer. Different types of one-slab photonic crystals are analyzed with this approach: we observe guided resonance peaks near 550 nm, 615 nm and 700 nm. Finally, a quantum dots microdrop is placed on the photonic crystal. The quantum dots emission wavelength matches with the photonic crystal guided resonance. A hyperspectral fluorescence microscope excites quantum dots between 436 nm and 483 nm, detects emission greater than 500 nm and plots a fluorescence wavelength spectrum. This set-up measures and compares the fluorescence of the quantum dots placed on and next to the photonic crystals. Our results show that the fluorescence is 30 times higher on the photonic crystals, but the fluorescence wavelength corresponds neither to the quantum dots emission nor to the photonic crystal guided resonance. In conclusion, this master thesis project demonstrates that it is possible to fabricate two-slab photonic crystals in silicon nitride and to plot their transmission and reflection spectra in order to find their guided resonance position. A fluorescence enhancement is visible, but at a different wavelength than of the quantum dots.

Seventh workshop on the role of impurities and defects in silicon device processing

DOE Office of Scientific and Technical Information (OSTI.GOV)

NONE

1997-08-01

This workshop is the latest in a series which has looked at technological issues related to the commercial development and success of silicon based photovoltaic (PV) modules. PV modules based on silicon are the most common at present, but face pressure from other technologies in terms of cell performance and cell cost. This workshop addresses a problem which is a factor in the production costs of silicon based PV modules.

Low Cost Fabrication of Silicon Carbide Based Ceramics and Fiber Reinforced Composites

NASA Technical Reports Server (NTRS)

Singh, M.; Levine, S. R.

1995-01-01

A low cost processing technique called reaction forming for the fabrication of near-net and complex shaped components of silicon carbide based ceramics and composites is presented. This process consists of the production of a microporous carbon preform and subsequent infiltration with liquid silicon or silicon-refractory metal alloys. The microporous preforms are made by the pyrolysis of a polymerized resin mixture with very good control of pore volume and pore size thereby yielding materials with tailorable microstructure and composition. Mechanical properties (elastic modulus, flexural strength, and fracture toughness) of reaction-formed silicon carbide ceramics are presented. This processing approach is suitable for various kinds of reinforcements such as whiskers, particulates, fibers (tows, weaves, and filaments), and 3-D architectures. This approach has also been used to fabricate continuous silicon carbide fiber reinforced ceramic composites (CFCC's) with silicon carbide based matrices. Strong and tough composites with tailorable matrix microstructure and composition have been obtained. Microstructure and thermomechanical properties of a silicon carbide (SCS-6) fiber reinforced reaction-formed silicon carbide matrix composites are discussed.

Dual Mode Thin Film Bulk Acoustic Resonators (FBARs) Based on AlN, ZnO and GaN Films with Tilted c-Axis Orientation

DTIC Science & Technology

2010-01-01

TERMS MEMS , acoustic wave devices, acoustic wave sensors Qing-Ming Wang University of Pittsburgh 123 University Place University Club Pittsburgh, PA...resonators,” Proc. SPIE Vol. 6223, 62230I, Micro ( MEMS ) and Nanotechnologies for Space Applications; Thomas George, Zhong-Yang Cheng; Eds. (May...microelectromechanical resonators has been recognized as a technological challenge in the current microelectronics and MEMS development. The

Widely-tunable, narrow-linewidth III-V/silicon hybrid external-cavity laser for coherent communication.

PubMed

Guan, Hang; Novack, Ari; Galfsky, Tal; Ma, Yangjin; Fathololoumi, Saeed; Horth, Alexandre; Huynh, Tam N; Roman, Jose; Shi, Ruizhi; Caverley, Michael; Liu, Yang; Baehr-Jones, Thomas; Bergman, Keren; Hochberg, Michael

2018-04-02

We demonstrate a III-V/silicon hybrid external cavity laser with a tuning range larger than 60 nm at the C-band on a silicon-on-insulator platform. A III-V semiconductor gain chip is hybridized into the silicon chip by edge-coupling the silicon chip through a Si 3 N 4 spot size converter. The demonstrated packaging method requires only passive alignment and is thus suitable for high-volume production. The laser has a largest output power of 11 mW with a maximum wall-plug efficiency of 4.2%, tunability of 60 nm (more than covering the C-band), and a side-mode suppression ratio of 55 dB (>46 dB across the C-band). The lowest measured linewidth is 37 kHz (<80 kHz across the C-band), which is the narrowest linewidth using a silicon-based external cavity. In addition, we successfully demonstrate all silicon-photonics-based transmission of 34 Gbaud (272 Gb/s) dual-polarization 16-QAM using our integrated laser and silicon photonic coherent transceiver. The results show no additional penalty compared to commercially available narrow linewidth tunable lasers. To the best of our knowledge, this is the first experimental demonstration of a complete silicon photonic based coherent link. This is also the first experimental demonstration of >250 Gb/s coherent optical transmission using a silicon micro-ring-based tunable laser.

Microelectronics Revolution And The Impact Of Automation In The New Industrialized Countries

NASA Astrophysics Data System (ADS)

Baranauskas, Vitor

1984-08-01

A brief review of some important historical points on the origin of the Factories and the Industrial Revolution is presented with emphasis in the social problems related to the automation of the human labor. Until the World War I, the social changes provoked by the Industrial Revolution caused one division of the World in developed and underdeveloped countries. After that period, the less developed nations began their industrialization mainly through the Multinationals Corporations (MC). These enterprises were very important to the production and exportation of utilities and manufactures in general, mainly in those products which required intensive and direct human labor. At present time, with the pervasiveness of microelectronics in the automation, this age seems to reaching an end because all continous processes in industry tend economicaly toward total automation. This fact will cause a retraction in long-term investments and, beyond massive unemployment, there is a tendency for these MC industries to return to their original countries. The most promising alternative to avoid these events, and perhaps the unique, is to incentive an autonomous development in areas of high technology, as for instance, the microelectronics itself.

In-situ formation of nanoparticles within a silicon-based matrix

DOEpatents

Thoma, Steven G [Albuquerque, NM; Wilcoxon, Jess P [Albuquerque, NM; Abrams, Billie L [Albuquerque, NM

2008-06-10

A method for encapsulating nanoparticles with an encapsulating matrix that minimizes aggregation and maintains favorable properties of the nanoparticles. The matrix comprises silicon-based network-forming compounds such as ormosils and polysiloxanes. The nanoparticles are synthesized from precursors directly within the silicon-based matrix.