Investigation of the fracture mechanics of boride composites

NASA Technical Reports Server (NTRS)

Kaufman, L.; Clougherty, E. V.; Nesor, H.

1971-01-01

Fracture energies of WC-6Co, Boride 5 (ZrB2+SiC), Boride 8(ZrB2+SiC+C) and Boride 8-M2(ZrB2+SiC+C) were measured by slow bend and impact tests of notched charpy bars. Cobalt bonded tungsten carbide exhibited impact energies of 0.76 ft-lb or 73.9 in-lb/square inch. Boride 5 and the Boride 8 exhibit impact energies one third and one quarter of that observed for WC-6Co comparing favorably with measurements for SiC and Si3N4. Slow bend-notched bar-fracture energies for WC-6Co were near 2.6 in-lb/square inch or 1/20 the impact energies. Slow bend energies for Boride 8-M2, Boride 8 and Boride 5 were 58%, 42% and 25% of the value observed for WC-6Co. Fractograph showed differences for WC-6Co where slow bend testing resulted in smooth transgranular cleavage while samples broken by impact exhibited intergranular failures. By contrast the boride fractures showed no distinction based on testing method. Fabrication studies were conducted to effect alteration of the boride composites by alloying and introduction of graphite cloth.

Alumina-based ceramic composite

DOEpatents

Alexander, K.B.; Tiegs, T.N.; Becher, P.F.; Waters, S.B.

1996-07-23

An improved ceramic composite comprising oxide ceramic particulates, nonoxide ceramic particulates selected from the group consisting of carbides, borides, nitrides of silicon and transition metals and mixtures thereof, and a ductile binder selected from the group consisting of metallic, intermetallic alloys and mixtures thereof is described. The ceramic composite is made by blending powders of the ceramic particulates and the ductile to form a mixture and consolidating the mixture of under conditions of temperature and pressure sufficient to produce a densified ceramic composite. 5 figs.

An Evaluation of a Borided Layer Formed on Ti-6Al-4V Alloy by Means of SMAT and Low-Temperature Boriding

PubMed Central

Yao, Quantong; Sun, Jian; Fu, Yuzhu; Tong, Weiping; Zhang, Hui

2016-01-01

In this paper, a nanocrystalline surface layer without impurities was fabricated on Ti-6Al-4V alloy by means of surface mechanical attrition treatment (SMAT). The grain size in the nanocrystalline layer is about 10 nm and grain morphology displays a random crystallographic orientation distribution. Subsequently, the low-temperature boriding behaviors (at 600 °C) of the SMAT sample, including the phase composition, microstructure, micro-hardness, and brittleness, were investigated in comparison with those of coarse-grained sample borided at 1100 °C. The results showed that the boriding kinetics could be significantly enhanced by SMAT, resulting in the formation of a nano-structured boride layers on Ti-6Al-4V alloy at lower temperature. Compared to the coarse-grained boriding sample, the SMAT boriding sample exhibits a similar hardness value, but improved surface toughness. The satisfactory surface toughness may be attributed to the boriding treatment that was carried out at lower temperature. PMID:28774115

Morphology and structure of borides in as-cast titanium and gamma-titanium aluminide-based alloys

NASA Astrophysics Data System (ADS)

Kitkamthorn, Usanee

In this study, the morphology and structure of the borides in boron-modified Ti- and gamma-TiAl-based alloys have been investigated using SEM, TEM, and HRTEM. A variety of different boride morphologies was observed including plates, needles, and ribbons. For the plate and needle borides, the major boride phase is B27 TiB. The needle borides have their major axis parallel to [010], and are bounded by (100) and {101} type-facets. The plate borides develop the same types of facets as the needles and have habit planes parallel to the (100). There are high densities of intrinsic stacking faults on (100) in these borides and these correspond to thin embedded layers of the Bf structure. The plate borides do not exhibit well-defined ORs with respect to the surrounding phases, suggesting that they develop in the liquid melt and were then trapped by the growing solid. Needle borides are observed mostly at boundaries between lamellar colonies: these needles tend to occur in groups lying nearly parallel to one another and, in some cases, to adopt well-defined ORs with respect to the surrounding phases. Cored borides with metallic phases such as beta, alpha, o and alpha 2+gamma in the center are frequently observed, especially in the Ti-based alloy. These core phases usually adopt well-defined ORs with respect to the surrounding boride which enable low-energy coherent interfaces to form between the phases. The ribbon borides are comprised of thin boride flakes interspersed with thin metallic layers. The major boride phase in these flakes is Bf TiB. The habit plane of the flakes is (010) and there are high densities of faults on this plane corresponding to intergrowths of the Ti3B 4 and TiB2 phases, together with thin layers or occluded pockets of metallic B2 phase. Occasional faults are observed on {110} corresponding to embedded slabs of B27 TiB. There is a well-defined OR between the boride flakes and the B2 phase within the ribbons, but not with the surrounding matrix. The characteristics of these various borides are consistent with them forming as eutectic reaction products, with the exception of the finest needles and plates observed in Ti-based alloy.

Ultra-fast boriding of metal surfaces for improved properties

DOEpatents

Timur, Servet; Kartal, Guldem; Eryilmaz, Osman L.; Erdemir, Ali

2015-02-10

A method of ultra-fast boriding of a metal surface. The method includes the step of providing a metal component, providing a molten electrolyte having boron components therein, providing an electrochemical boriding system including an induction furnace, operating the induction furnace to establish a high temperature for the molten electrolyte, and boriding the metal surface to achieve a boride layer on the metal surface.

Method for Forming Fiber Reinforced Composite Bodies with Graded Composition and Stress Zones

NASA Technical Reports Server (NTRS)

Singh, Mrityunjay (Inventor); Levine, Stanley R. (Inventor); Smialek, James A. (Inventor)

1999-01-01

A near-net, complex shaped ceramic fiber reinforced silicon carbide based composite bodies with graded compositions and stress zones is disclosed. To provide the composite a fiber preform is first fabricated and an interphase is applied by chemical vapor infiltration, sol-gel or polymer processes. This first body is further infiltrated with a polymer mixture containing carbon, and/or silicon carbide, and additional oxide, carbide, or nitride phases forming a second body. One side of the second body is spray coated or infiltrated with slurries containing high thermal expansion and oxidation resistant. crack sealant phases and the other side of this second body is coated with low expansion phase materials to form a third body. This third body consisting of porous carbonaceous matrix surrounding the previously applied interphase materials, is then infiltrated with molten silicon or molten silicon-refractory metal alloys to form a fourth body. The resulting fourth body comprises dense composites consisting of fibers with the desired interphase which are surrounded by silicon carbide and other second phases materials at the outer and inner surfaces comprising material of silicon, germanium, refractory metal suicides, borides, carbides, oxides, and combinations thereof The resulting composite fourth body has different compositional patterns from one side to the other.

Boriding of high carbon high chromium cold work tool steel

NASA Astrophysics Data System (ADS)

Muhammad, W.

2014-06-01

High-carbon high-chromium cold work tool steels are widely used for blanking and cold forming of punches and dies. It is always advantageous to obtain an increased wear resistant surface to improve life and performance of these steels. In this connection boriding of a high-carbon high-chromium cold work die steel, D3, was conducted in a mixture of 30% B4C, 70% borax at 950 °C for two, four and six hours. Case depth of the borided layer obtained was between 40 to 80 μm. After boriding, the surface hardness achieved was between 1430 to 1544 HV depending upon the process time. X-ray diffraction studies confirmed the formation of a duplex compound layer consisting of FeB and Fe2B. It is generally considered that FeB is undesirable because of its inherent brittleness. Post boriding treatment (homogenization) transformed the compound layer into single-phase layer of Fe2B, while surface hardness decreased to 1345-1430 HV. Pin-on-disc wer test showed that wear resistance of the borided samples was superior as compared to non-borided material and increased with boriding time.

The Nature of the Microstructure and Interface Boundary Formation in Directionally Solidified Ceramic Boride Composites

DTIC Science & Technology

2015-02-19

boride composites *Volodymyr Borysovych Filipov SCIENCE AND TECHNOLOGY CENTER IN UKRAINE METALISTIV 7A, KYIV, UKRAINE *FRANTSEVICH...microstructure and interface boundary formation in directionally solidified ceramic boride composites 5a. CONTRACT NUMBER STCU P-512 5b. GRANT NUMBER...BOUNDARY FORMATION IN DIRECTIONALLY SOLIDIFIED CERAMIC BORIDE COMPOSITES Project manager: Filipov Volodymyr Borysovych Phone: (+380.44) 424-13-67

Novel Routes for Sintering of Ultra-high Temperature Ceramics and their Properties

DTIC Science & Technology

2014-10-31

UHTCs charge (zirconium and hafnium borides , SiC) with additives (chromium carbide, nickel, chromium, etc.), which activate sintering process, is...temperature phases in a form of carboborides of zirconium and bi borides of zirconium or chromium. Elevation of densification rate of sintered borides is...superplasticity under the slip mechanism of zirconium boride and silica carbide grains on grain boundary interlayers with nanocrystalline grains of carbon

Designing superhard metals: The case of low borides

NASA Astrophysics Data System (ADS)

Liang, Yongcheng; Qin, Ping; Jiang, Haitao; Zhang, Lizhen; Zhang, Jing; Tang, Chun

2018-04-01

The search for new superhard materials has usually focused on strong covalent solids. It is, however, a huge challenge to design superhard metals because of the low resistance of metallic bonds against the formation and movement of dislocations. Here, we report a microscopic mechanism of enhancing hardness by identifying highly stable thermodynamic phases and strengthening weak slip planes. Using the well-known transition-metal borides as prototypes, we demonstrate that several low borides possess unexpectedly high hardness whereas high borides exhibit an anomalous hardness reduction. Such an unusual phenomenon originates from the peculiar bonding mechanisms in these compounds. Furthermore, the low borides have close compositions, similar structures, and degenerate formation energies. This enables facile synthesis of a multiphase material that includes a large number of interfaces among different borides, and these interfaces form nanoscale interlocks that strongly suppress the glide dislocations within the metal bilayers, thereby drastically enhancing extrinsic hardness and achieving true superhard metals. Therefore, this study not only elucidates the unique mechanism responsible for the anomalous hardening in this class of borides but also offers a valid alchemy to design novel superhard metals with multiple functionalities.

Characterisation of titanium-titanium boride composites processed by powder metallurgy techniques

DOE Office of Scientific and Technical Information (OSTI.GOV)

Selva Kumar, M., E-mail: sel_mcet@yahoo.co.in; Chandrasekar, P.; Chandramohan, P.

2012-11-15

In this work, a detailed characterisation of titanium-titanium boride composites processed by three powder metallurgy techniques, namely, hot isostatic pressing, spark plasma sintering and vacuum sintering, was conducted. Two composites with different volume percents of titanium boride reinforcement were used for the investigation. One was titanium with 20% titanium boride, and the other was titanium with 40% titanium boride (by volume). Characterisation was performed using X-ray diffraction, electron probe micro analysis - energy dispersive spectroscopy and wavelength dispersive spectroscopy, image analysis and scanning electron microscopy. The characterisation results confirm the completion of the titanium boride reaction. The results reveal themore » presence of titanium boride reinforcement in different morphologies such as needle-shaped whiskers, short agglomerated whiskers and fine plates. The paper also discusses how mechanical properties such as microhardness, elastic modulus and Poisson's ratio are influenced by the processing techniques as well as the volume fraction of the titanium boride reinforcement. - Highlights: Black-Right-Pointing-Pointer Ti-TiB composites were processed by HIP, SPS and vacuum sintering. Black-Right-Pointing-Pointer The completion of Ti-TiB{sub 2} reaction was confirmed by XRD, SEM and EPMA studies. Black-Right-Pointing-Pointer Hardness and elastic properties of Ti-TiB composites were discussed. Black-Right-Pointing-Pointer Processing techniques were compared with respect to their microstructure.« less

Metal-boride phase formation on tungsten carbide (WC-Co) during microwave plasma chemical vapor deposition

NASA Astrophysics Data System (ADS)

Johnston, Jamin M.; Catledge, Shane A.

2016-02-01

Strengthening of cemented tungsten carbide by boriding is used to improve the wear resistance and lifetime of carbide tools; however, many conventional boriding techniques render the bulk carbide too brittle for extreme conditions, such as hard rock drilling. This research explored the variation in metal-boride phase formation during the microwave plasma enhanced chemical vapor deposition process at surface temperatures from 700 to 1100 °C. We showed several well-adhered metal-boride surface layers consisting of WCoB, CoB and/or W2CoB2 with average hardness from 23 to 27 GPa and average elastic modulus of 600-730 GPa. The metal-boride interlayer was shown to be an effective diffusion barrier against elemental cobalt; migration of elemental cobalt to the surface of the interlayer was significantly reduced. A combination of glancing angle X-ray diffraction, electron dispersive spectroscopy, nanoindentation and scratch testing was used to evaluate the surface composition and material properties. An evaluation of the material properties shows that plasma enhanced chemical vapor deposited borides formed at substrate temperatures of 800 °C, 850 °C, 900 °C and 1000 °C strengthen the material by increasing the hardness and elastic modulus of cemented tungsten carbide. Additionally, these boride surface layers may offer potential for adhesion of ultra-hard carbon coatings.

Characterization of AISI 4140 borided steels

NASA Astrophysics Data System (ADS)

Campos-Silva, I.; Ortiz-Domínguez, M.; López-Perrusquia, N.; Meneses-Amador, A.; Escobar-Galindo, R.; Martínez-Trinidad, J.

2010-02-01

The present study characterizes the surface of AISI 4140 steels exposed to the paste-boriding process. The formation of Fe 2B hard coatings was obtained in the temperature range 1123-1273 K with different exposure times, using a 4 mm thick layer of boron carbide paste over the material surface. First, the growth kinetics of boride layers at the surface of AISI 4140 steels was evaluated. Second, the presence and distribution of alloying elements on the Fe 2B phase was measured using the Glow Discharge Optical Emission Spectrometry (GDOES) technique. Further, thermal residual stresses produced on the borided phase were evaluated by X-ray diffraction (XRD) analysis. The fracture toughness of the iron boride layer of the AISI 4140 borided steels was estimated using a Vickers microindentation induced-fracture testing at a constant distance of 25 μm from the surface. The force criterion of fracture toughness was determined from the extent of brittle cracks, both parallel and perpendicular to the surface, originating at the tips of an indenter impression. The fracture toughness values obtained by the Palmqvist crack model are expressed in the form KC( π/2) > KC > KC(0) for the different applied loads and experimental parameters of the boriding process.

Computational-Experimental Processing of Boride/Carbide Composites by Reactive Infusion of Hf Alloy Melts into B4C

DTIC Science & Technology

2015-09-16

AFRL-AFOSR-VA-TR-2015-0314 Computational -Experimental Processing of Boride /Carbide Composites by Reactive Infusion of Hf Alloy Melts into B4C...Computational -Experimental Processing of Boride /Carbide Composites by Reactive Infusion of Hf Alloy Melts into B4C 5a.  CONTRACT NUMBER 5b.  GRANT...with a packed bed of B4C to form boride - carbide precipitates. Although the ultimate goal of the research endeavor is to enhance significantly the

Field free, directly heated lanthanum boride cathode

DOEpatents

Leung, Ka-Ngo; Moussa, D.; Wilde, S.B.

1987-02-02

A directly heated cylindrical lanthanum boride cathode assembly is disclosed which minimizes generation of magnetic field which would interfere with electron emission from the cathode. The cathode assembly comprises a lanthanum boride cylinder in electrical contact at one end with a central support shaft which functions as one electrode to carry current to the lanthanum boride cylinder and in electrical contact, at its opposite end with a second electrode which is coaxially position around the central support shaft so that magnetic fields generated by heater current flowing in one direction through the central support shaft are cancelled by an opposite magnetic field generated by current flowing through the lanthanum boride cylinder and the coaxial electrode in a direction opposite to the current flow in the central shaft.

Characterization and diffusion model for the titanium boride layers formed on the Ti6Al4V alloy by plasma paste boriding

NASA Astrophysics Data System (ADS)

Keddam, Mourad; Taktak, Sukru

2017-03-01

The present study is focused on the estimation of activation energy of boron in the plasma paste borided Ti6Al4V alloy, which is extensively used in technological applications, using an analytical diffusion model. Titanium boride layers were successfully produced by plasma paste boriding method on the Ti6Al4V alloy in the temperature range of 973-1073 K for a treatment time ranging from 3 to 7 h. The presence of both TiB2 top-layer and TiB whiskers sub-layer was confirmed by the XRD analysis and SEM observations. The surface hardness of the borided alloy was evaluated using Micro-Knoop indenter. The formation rates of the TiB2 and TiB layers were found to have a parabolic character at all applied process temperatures. A diffusion model was suggested to estimate the boron diffusivities in TiB2 and TiB layers under certain assumptions, by considering the effect of boride incubation times. Basing on own experimental data on boriding kinetics, the activation energies of boron in TiB2 and TiB phases were estimated as 136.24 ± 0.5 and 63.76 ± 0.5 kJ mol-1, respectively. Finally, the obtained values of boron activation energies for Ti6Al4V alloy were compared with the data available in the literature.

Plasma-induced damage of tungsten coatings on graphite limiters

NASA Astrophysics Data System (ADS)

Fortuna, E.; Rubel, M. J.; Psoda, M.; Andrzejczuk, M.; Kurzydowski, K. J.; Miskiewicz, M.; Philipps, V.; Pospieszczyk, A.; Sergienko, G.; Spychalski, M.; Zielinski, W.

2007-03-01

Vaccum plasma sprayed tungsten coatings with an evaporated sandwich Re-W interlayer on graphite limiter blocks were studied after the experimental campaign in the TEXTOR tokamak. The coating morphology was modified by high-heat loads and co-deposition of species from the plasma. Co-deposits contained fuel species, carbon, boron and silicon. X-ray diffractometer phase analysis indicated the coexistence of metallic tungsten and its carbides (WC and W2C) and boride (W2B). In the Re-W layer the presence of carbon was detected in a several micrometres thick zone. In the overheated part of the limiter, the Re-W layer was transformed into a sigma phase.

Properties of boride-added powder metallurgy magnesium alloys

NASA Astrophysics Data System (ADS)

Tanaka, Atsushi; Yoshimura, Syota; Fujima, Takuya; Takagi, Ken-ichi

2009-06-01

Magnesium alloys with metallic borides, magnesium diboride (MgB2) or aluminum diboride (AlB2), were investigated regarding their mechanical properties, transverse rupture strength (TRS) and micro Vickers hardness (HV). The alloys were made from pure Mg, Al and B powders by mechanical alloying and hot pressing to have boride content of between 2.0 and 20 vol%. The alloy with AlB2 exhibited an obvious improvement of HV around a boride content of 6 vol% though the other alloy, with MgB2, did not. TRS showed moderate maxima around the same boride content region for the both alloys. X-ray diffraction measurements indicated an intermetallic compound, Mg17Al12, formed in the alloy with AlB2, which was consistent with its higher hardness.

New high boron content polyborane precursors to advanced ceramic materials: New syntheses, new applications

NASA Astrophysics Data System (ADS)

Guron, Marta

There is a need for new synthetic routes to high boron content materials for applications as polymeric precursors to ceramics, as well as in neutron shielding and potential medical applications. To this end, new ruthenium-catalyzed olefin metathesis routes have been devised to form new complex polyboranes and polymeric species. Metathesis of di-alkenyl substituted o-carboranes allowed the synthesis of ring-closed products fused to the carborane cage, many of which are new compounds and one that offers a superior synthetic method to one previously published. Acyclic diene metathesis of di-alkenyl substituted m-carboranes resulted in the formation of new main-chain carborane-containing polymers of modest molecular weights. Due to their extremely low char yields, and in order to explore other metathesis routes, ring opening metathesis polymerization (ROMP) was used to generate the first examples of poly(norbornenyl- o-carboranes). Monomer synthesis was achieved via a two-step process, incorporating Ti-catalyzed hydroboration to make 6-(5-norbornenyl)-decaborane, followed by alkyne insertion in ionic liquid media to achieve 1,2-R2 -3-norbornenyl o-carborane species. The monomers were then polymerized using ROMP to afford several examples of poly(norbornenyl- o-carboranes) with relatively high molecular weights. One such polymer, [1-Ph, 3-(=CH2-C5H7-CH2=)-1,2-C 2B10H10]n, had a char yield very close to the theoretical char yield of 44%. Upon random copolymerization with poly(6-(5-norbornenyl) decaborane), char yields significantly increased to 80%, but this number was well above the theoretical value implicating the formation of a boron-carbide/carbon ceramic. Finally, applications of polyboranes were explored via polymer blends toward the synthesis of ceramic composites and the use of polymer precursors as reagents for potential ultra high temperature ceramic applications. Upon pyrolysis, polymer blends of poly(6-(5-norbornenyl)-decaborane) and poly(methylcarbosilane) converted into boron-carbide/silicon-carbide ceramics with high char yields. These polymer blends were also shown to be useful as reagents for synthesis of hafnium-boride/hafnium-carbide/silicon carbide and zirconium-boride/zirconium-carbide/silicon carbide composites.

Influence of laser alloying with boron and niobium on microstructure and properties of Nimonic 80A-alloy

NASA Astrophysics Data System (ADS)

Makuch, N.; Piasecki, A.; Dziarski, P.; Kulka, M.

2015-12-01

Ni-base superalloys were widely used in aeronautics, chemical and petrochemical industries due to their high corrosion resistance, high creep and rupture strength at high temperature. However, these alloys were not considered for applications in which conditions of appreciable mechanical wear were predominant. The diffusion boriding provided suitable protection against wear. Unfortunately, this process required long duration and high temperature. In this study, instead of the diffusion process, the laser alloying with boron and niobium was used in order to produce the hard and wear resistant layer on Nimonic 80A-alloy. The laser-alloying was carried out as a two-step process. First, the external cylindrical surface of specimens was pre-placed with a paste containing boron and niobium. Then, the pre-placed coating and the thin surface layer of the substrate were re-melted by a laser beam. The high laser beam power (P=1.56 kW) and high averaging irradiance (E=49.66 kW/cm2) provided the thick laser re-melted zone. The laser-borided layers were significantly thicker (470 μm) in comparison with the layers obtained as a consequence of the diffusion boriding. Simultaneously, the high overlapping of multiple laser tracks (86%) caused that the laser-alloyed layer was uniform in respect of the thickness. The produced layer consisted of nickel borides (Ni3B, Ni2B, Ni4B3, NiB), chromium borides (CrB, Cr2B), niobium borides (NbB2, NbB) and Ni-phase. The presence of hard borides caused the increase in microhardness up to 1000 HV in the re-melted zone. However, the measured values were lower than those-characteristic of niobium borides, chromium borides and nickel borides. The presence of the soft Ni-phase in re-melted zone was the reason for such a situation. After laser alloying, the significant increase in abrasive wear resistance was also observed. The mass wear intensity factor, as well as the relative mass loss of the laser-alloyed specimens, was over 10 times smaller in comparison with untreated Nimonic 80A-alloy.

In Situ Solid-Gas Reactivity of Nanoscaled Metal Borides from Molten Salt Synthesis.

PubMed

Gouget, Guillaume; Debecker, Damien P; Kim, Ara; Olivieri, Giorgia; Gallet, Jean-Jacques; Bournel, Fabrice; Thomas, Cyril; Ersen, Ovidiu; Moldovan, Simona; Sanchez, Clément; Carenco, Sophie; Portehault, David

2017-08-07

Metal borides have mostly been studied as bulk materials. The nanoscale provides new opportunities to investigate the properties of these materials, e.g., nanoscale hardening and surface reactivity. Metal borides are often considered stable solids because of their covalent character, but little is known on their behavior under a reactive atmosphere, especially reductive gases. We use molten salt synthesis at 750 °C to provide cobalt monoboride (CoB) nanocrystals embedded in an amorphous layer of cobalt(II) and partially oxidized boron as a model platform to study morphological, chemical, and structural evolutions of the boride and the superficial layer exposed to argon, dihydrogen (H 2 ), and a mixture of H 2 and carbon dioxide (CO 2 ) through a multiscale in situ approach: environmental transmission electron microscopy, synchrotron-based near-ambient-pressure X-ray photoelectron spectroscopy, and near-edge X-ray absorption spectroscopy. Although the material is stable under argon, H 2 triggers at 400 °C decomposition of CoB, leading to cobalt(0) nanoparticles. We then show that H 2 activates CoB for the catalysis of CO 2 methanation. A similar decomposition process is also observed on NiB nanocrystals under oxidizing conditions at 300 °C. Our work highlights the instability under reactive atmospheres of nanocrystalline cobalt and nickel borides obtained from molten salt synthesis. Therefore, we question the general stability of metal borides with distinct compositions under such conditions. These results shed light on the actual species in metal boride catalysis and provide the framework for future applications of metal borides in their stability domains.

Interlayer utilization (including metal borides) for subsequent deposition of NSD films via microwave plasma CVD on 316 and 440C stainless steels

NASA Astrophysics Data System (ADS)

Ballinger, Jared

Diamond thin films have promising applications in numerous fields due to the extreme properties of diamonds in conjunction with the surface enhancement of thin films. Biomedical applications are numerous including temporary implants and various dental and surgical instruments. The unique combination of properties offered by nanostructured diamond films that make it such an attractive surface coating include extreme hardness, low obtainable surface roughness, excellent thermal conductivity, and chemical inertness. Regrettably, numerous problems exist when attempting to coat stainless steel with diamond generating a readily delaminated film: outward diffusion of iron to the surface, inward diffusion of carbon limiting necessary surface carbon precursor, and the mismatch between the coefficients of thermal expansion yielding substantial residual stress. While some exotic methods have been attempted to overcome these hindrances, the most common approach is the use of an intermediate layer between the stainless steel substrate and the diamond thin film. In this research, both 316 stainless steel disks and 440C stainless steel ball bearings were tested with interlayers including discrete coatings and graded, diffusion-based surface enhancements. Titanium nitride and thermochemical diffusion boride interlayers were both examined for their effectiveness at allowing for the growth of continuous and adherent diamond films. Titanium nitride interlayers were deposited by cathodic arc vacuum deposition on 440C bearings. Lower temperature diamond processing resulted in improved surface coverage after cooling, but ultimately, both continuity and adhesion of the nanostructured diamond films were unacceptable. The ability to grow quality diamond films on TiN interlayers is in agreement with previous work on iron and low alloy steel substrates, and the similarly seen inadequate adhesion strength is partially a consequence of the lacking establishment of an interfacial carbide phase. Surface boriding was implemented using the novel method of microwave plasma CVD with a mixture of hydrogen and diborane gases. On 440C bearings, dual phase boride layers of Fe2B and FeB were formed which supported adhered nanostructured diamond films. Continuity of the films was not seamless with limited regions remaining uncoated potentially corresponding to delamination of the film as evidenced by the presence of tubular structures presumably composed of sp2 bonded carbon. Surface boriding of 316 stainless steel discs was conducted at various powers and pressures to achieve temperatures ranging from 550-800 °C. The substrate boriding temperature was found to substantially influence the resultant interlayer by altering the metal boride(s) present. The lowest temperatures produced an interlayer where CrB was the single detected phase, higher temperatures yielded the presence of only Fe2B, and a combination of the two phases resulted from an intermediate boriding temperature. Compared with the more common, commercialized boriding methods, this a profound result given the problems posed by the FeB phase in addition to other advantages offered by CVD processes and microwave generated plasmas in general. Indentation testing of the boride layers revealed excellent adhesion strength for all borided interlayers, and above all, no evidence of cracking was observed for a sole Fe2B phase. As with boriding of 440C bearings, subsequent diamond deposition was achieved on these interlayers with substantially improved adhesion strength relative to diamond coated TiN interlayers. Both XRD and Raman spectroscopy confirmed a nanostructured diamond film with interfacial chromium carbides responsible for enhanced adhesion strength. Interlayers consisting solely of Fe2B have displayed an ability to support fully continuous nanostructured diamond films, yet additional study is required for consistent reproduction. This is in good agreement with initial work on pack borided high alloy steels to promote diamond film surface modification. The future direction for continued research of nanostructured diamond coatings on microwave plasma CVD borided stainless steel should further investigate the adhesion of both borided interlayers and subsequent NSD films in addition to short, interrupted diamond depositions to study the interlayer/diamond film interface.

Plasma boriding of a cobalt-chromium alloy as an interlayer for nanostructured diamond growth

NASA Astrophysics Data System (ADS)

Johnston, Jamin M.; Jubinsky, Matthew; Catledge, Shane A.

2015-02-01

Chemical vapor deposited (CVD) diamond coatings can potentially improve the wear resistance of cobalt-chromium medical implant surfaces, but the high cobalt content in these alloys acts as a catalyst to form graphitic carbon. Boriding by high temperature liquid baths and powder packing has been shown to improve CVD diamond compatibility with cobalt alloys. We use the microwave plasma-enhanced (PE) CVD process to deposit interlayers composed primarily of the borides of cobalt and chromium. The use of diborane (B2H6) in the plasma feedgas allows for the formation of a robust boride interlayer for suppressing graphitic carbon during subsequent CVD of nano-structured diamond (NSD). This metal-boride interlayer is shown to be an effective diffusion barrier against elemental cobalt for improving nucleation and adhesion of NSD coatings on a CoCrMo alloy. Migration of elemental cobalt to the surface of the interlayer is significantly reduced and undetectable on the surface of the subsequently-grown NSD coating. The effects of PECVD boriding are compared for a range of substrate temperatures and deposition times and are evaluated using glancing-angle X-ray diffraction (XRD), cross-sectional scanning electron microscopy (SEM), energy dispersive X-ray spectroscopy (EDS), and micro-Raman spectroscopy. Boriding of CoCrMo results in adhered nanostructured diamond coatings with low surface roughness.

Analysis of Deformation Substructures in a Notched LCF Sample Under Dwell Condition in a Ni-Based Superalloy (PREPRINT)

DTIC Science & Technology

2012-08-01

interior, and carbides and borides at the grain boundaries. Blocky carbide particles can also be seen in the grain interior (Figure 1b). The borides ...can be seen distributed (b) higher magnification image of a typical grain boundary decorated with carbide and boride particles. Bi-modal distribution

Future Directions for Selected Topics in Physics and Materials Science

DTIC Science & Technology

2012-07-12

referred to as lightides (e.g. borides , nitrides, phosphides) • Materials for energy conversion, energy storage, energy transport and energy production...Distributed nanosystems and sensors • Strategy for multilayered combinatorics • lightides ( borides , nitrides, phosphides, • New applications for...Strategy for multilayered combinatorics Lightides ( borides , nitrides, phosphides) • Energy conversion, .storage and production • Precision control

Chemical precursors to non-oxide ceramics: Macro to nanoscale materials

NASA Astrophysics Data System (ADS)

Forsthoefel, Kersten M.

Non-oxide ceramics exhibit a number of important properties that make them ideal for technologically important applications (thermal and chemical stability, high strength and hardness, wear-resistance, light weight, and a range of electronic and optical properties). Unfortunately, traditional methodologies to these types of materials are limited to fairly simple shapes and complex processed forms cannot be attained through these methods. The establishment of the polymeric precursor approach has allowed for the generation of advanced materials, such as refractory non-oxide ceramics, with controlled compositions, under moderate conditions, and in processed forms. The goal of the work described in this dissertation was both to develop new processible precursors to technologically important ceramics and to achieve the formation of advanced materials in processed forms. One aspect of this research exploited previously developed preceramic precursors to boron carbide, boron nitride and silicon carbide for the generation of a wide variety of advanced materials: (1) ultra-high temperature ceramic (UHTC) structural materials composed of hafnium boride and related composite materials, (2) the quaternary borocarbide superconductors, and (3) on the nanoscale, non-oxide ceramic nanotubules. The generation of the UHTC and the quaternary borocarbide materials was achieved through a method that employs a processible polymer/metal(s) dispersion followed by subsequent pyrolyses. In the case of the UHTC, hafnium oxide, hafnium, or hafnium boride powders were dispersed in a suitable precursor to afford hafnium borides or related composite materials (HfB2/HfC, HfB2/HfN, HfB2/SiC) in high yields and purities. The quaternary borocarbide superconducting materials were produced from pyrolyses of dispersions containing appropriate stoichiometric amounts of transition metal, lanthanide metal, and the polyhexenyldecaborane polymer. Both chemical vapor deposition (CVD) based routes employing a molecular precursor and porous alumina templating routes paired with solution-based methodologies are shown to generate non-oxide ceramic nanotubules of boron carbide, boron nitride and silicon carbide compositions. In the final phase of this work, a new metal-catalyzed route to poly(1-alkenyl- o-carborane) homopolymers and related copolymers was developed. Both homopolymers of 1-alkenyl-o-carboranes (1-vinyl-, 1-butenyl-, 1-hexenyl-) and copolymers of 1-hexenyl-o-carborane and allyltrimethylsilane or 1-hexenyl-o-carborane and 6-hexenyldecaborane were synthesized via the Cp2ZrMe2/B(C6F5) 3 catalyst system. A copolymer containing 1-hexenyl-o-carborane and the cross-linking agent, 6-hexenyldecaborane, was synthetically designed which exhibits initial cross-linking at ˜250°C and then converts in 75% yields to boron carbide at 1250°C.

The Growth Behavior of Titanium Boride Layers in α and β Phase Fields of Titanium

NASA Astrophysics Data System (ADS)

Lv, Xiaojun; Hu, Lingyun; Shuang, Yajing; Liu, Jianhua; Lai, Yanqing; Jiang, Liangxing; Li, Jie

2016-07-01

In this study, the commercially pure titanium was successfully electrochemical borided in a borax-based electrolyte. The process was carried out at a constant cathodic current density of 300 mA cm-2 and at temperatures of 1123 K and 1223 K (850 °C and 950 °C) for 0.5, 1, 2, 3, and 5 hours. The growth behavior of titanium boride layers in the α phase field of titanium was compared with that in the β phase field. After boriding, the presence of both the TiB2 top layer and TiB whisker sub-layer was confirmed by the X-ray diffraction (XRD) and scanning electron microscope. The relationship between the thickness of boride layers and boriding time was found to have a parabolic character in both α and β phase fields of titanium. The TiB whiskers showed ultra-fast growth rate in the β phase field. Its growth rate constant was found to be as high as 3.2002 × 10-13 m2 s-1. Besides, the chemical resistance of the TiB2 layer on the surface of titanium substrate was characterized by immersion tests in molten aluminum.

Kinetic Investigation and Wear Properties of Fe2B Layers on AISI 12L14 Steel

NASA Astrophysics Data System (ADS)

Keddam, M.; Ortiz-Dominguez, M.; Elias-Espinosa, M.; Arenas-Flores, A.; Zuno-Silva, J.; Zamarripa-Zepeda, D.; Gomez-Vargas, O. A.

2018-03-01

In the current study, the powder-pack boriding was applied to the AISI 12L14 steel in the temperature range 1123 K to 1273 K for an exposure time between 2 and 8 hours. The produced boride layer was composed of Fe2B with a sawtooth morphology. A diffusion model based on the integral method was applied to investigate the growth kinetics of Fe2B layers. As a main result, the boron diffusion coefficients in Fe2B were estimated by considering the principle of mass balance at the (Fe2B/substrate) interface with an inclusion of boride incubation times. The value of activation energy for boron diffusion in AISI 12L14 steel was estimated as 165 kJ mol-1 and compared with other values of activation energy found in the literature. An experimental validation of the present model was made by using four different boriding conditions. Furthermore, the Rockwell-C adhesion test was employed to assess the cohesion of boride layers to the base metal. The scratch and pin-on-disc tests were also carried out to analyze the effect of boriding on wear behavior of AISI 12L14 steel.

Suppression of Boride Formation in Transient Liquid Phase Bonding of Pairings of Parent Superalloy Materials with Different Compositions and Grain Structures and Resulting Mechanical Properties

NASA Astrophysics Data System (ADS)

Steuer, Susanne; Singer, Robert F.

2014-07-01

Two Ni-based superalloys, columnar grained Alloy 247 and single-crystal PWA1483, are joined by transient liquid phase bonding using an amorphous brazing foil containing boron as a melting point depressant. At lower brazing temperatures, two different morphologies of borides develop in both base materials: plate-like and globular ones. Their ratio to each other is temperature dependent. With very high brazing temperatures, the deleterious boride formation in Alloy 247 can be totally avoided, probably because the three-phase-field moves to higher alloying element contents. For the superalloy PWA1483, the formation of borides cannot be completely avoided at high brazing temperatures as incipient melting occurs. During subsequent solidification of these areas, Chinese-script-like borides precipitate. The mechanical properties (tensile tests at room and elevated temperatures and short-term creep rupture tests at elevated temperatures) for brazed samples without boride precipitation are very promising. Tensile strengths and creep times to 1 pct strain are comparable, respectively, higher than the ones of the weaker parent material for all tested temperatures and creep conditions (from 90 to 100 pct rsp. 175 to 250 pct).

Passivating overcoat bilayer for multilayer reflective coatings for extreme ultraviolet lithography

DOEpatents

Montcalm, Claude; Stearns, Daniel G.; Vernon, Stephen P.

1999-01-01

A passivating overcoat bilayer is used for multilayer reflective coatings for extreme ultraviolet (EUV) or soft x-ray applications to prevent oxidation and corrosion of the multilayer coating, thereby improving the EUV optical performance. The overcoat bilayer comprises a layer of silicon or beryllium underneath at least one top layer of an elemental or a compound material that resists oxidation and corrosion. Materials for the top layer include carbon, palladium, carbides, borides, nitrides, and oxides. The thicknesses of the two layers that make up the overcoat bilayer are optimized to produce the highest reflectance at the wavelength range of operation. Protective overcoat systems comprising three or more layers are also possible.

Microstructure Evolution and Composition Control during the Processing of Thin-gage Metallic Foil (Preprint)

DTIC Science & Technology

2012-02-01

the presence of somewhat randomly-distributed carbides and borides (white particles in BSE images), this grain size was comparable to that observed...pinned by carbide/ boride particles (imaging white in Figure 8c). The very fine gamma-prime precipitates likely produced during magnetron sputtering...sputtered material. First, the carbide/ boride particles were nucleated and hence located preferentially at the grain boundaries in the sputtered

Novel Routes to Tune Thermal Conductivities and Thermoelectric Properties of Materials

DTIC Science & Technology

2012-11-15

expand the possibilities of borides as functional compou nds. A series of indium-free novel TCO compounds with novel crystal structures, has...powerful methods for modification were demonstrated in the borides , silicides and oxides. Introduction: The goal of this project is to...the possibility to modify the crystal structures can expand the possibilities of borides as functional compounds. A series of indium-free novel TCO

Alloying-Element Loss during High-Temperature Processing of a Nickel-Base Superalloy (Preprint)

DTIC Science & Technology

2013-01-01

precipitates, and the fine white/gray particles are carbides and borides . ............................................. 23 Figure 2. Aluminum...comparable size, and submicron carbides and borides . A fifteen-minute heat treatment at the subsolvus temperature used in the present work (i.e...precipitates, and ~0.3 volume pct. of carbides and borides with an average diameter of ~0.3 m (Figure 1) [5, 6]. B. Procedures To establish the

Amorphous Iron Borides: Preparation, Structure and Magnetic Properties.

DTIC Science & Technology

1982-09-28

temperature. External magnetic field experiments were performed in a superconducting solenoid with both source and absor- ber at 4.2 K. The observed...D-Ai20 919 AMORPHOUS IRON BORIDES: PREPARATION STRUCTURE AND i/i MAGNETIC PROPERTIES(U) JOHNS HOPKINS UNIV LAUREL NO APPLIED PHYSICS LRB K MOORJRNI...NATIONAL BUREAU OF STANOANOS-93-A 10 AMORPHOUS IRON BORIDES: PREPARATION, STRUCTURE ~AND MAGNETIC PROPERTIES FINAL REPORT Kishin Moorjani September 1982 U

Effect of Heat Treatment on Borides Precipitation and Mechanical Properties of CoCrFeNiAl1.8Cu0.7B0.3Si0.1 High-Entropy Alloy Prepared by Arc-Melting and Laser-Cladding

NASA Astrophysics Data System (ADS)

Zhang, H.; Tang, H.; He, Y. Z.; Zhang, J. L.; Li, W. H.; Guo, S.

2017-11-01

Effects of heat treatment on borides precipitation and mechanical properties of arc-melted and laser-cladded CoCrNiFeAl1.8Cu0.7B0.3Si0.1 high-entropy alloys were comparatively studied. The arc-melted alloy contains lots of long strip borides distributed in the body-centered cubic phase, with a hardness about 643 HV0.5. Laser-cladding can effectively inhibit the boride precipitation and the laser-cladded alloy is mainly composed of a simple bcc solid solution, with a high hardness about 769 HV0.5, indicating the strengthening effect by interstitial boron atoms is greater than the strengthening by borides precipitation. Heat treatments between 800°C and 1200°C can simultaneously improve the hardness and fracture toughness of arc-melted alloys, owing to the boride spheroidization, dissolution, re-precipitation, and hence the increased boron solubility and nano-precipitation in the bcc solid solution. By contrast, the hardness of laser-cladded alloys reduce after heat treatments in the same temperature range, due to the decreased boron solubility in the matrix.

Certain physical properties of cobalt and nickel borides

NASA Technical Reports Server (NTRS)

Kostetskiy, I. I.; Lvov, S. N.

1981-01-01

The temperature dependence of the electrical resistivity, the thermal conductivity, and the thermal emf of cobalt and nickel borides were studied. In the case of the nickel borides the magnetic susceptibility and the Hall coefficient were determined at room temperature. The results are discussed with allowance for the current carrier concentration, the effect of various mechanisms of current-carrier scattering and the location of the Fermi level in relation to the 3d band.

A study on the formation of solid state nanoscale materials using polyhedral borane compounds

NASA Astrophysics Data System (ADS)

Romero, Jennifer V.

The formation of boron containing materials using a variety of methods was explored. The pyrolysis of a metal boride precursor solution can be accomplished using a one-source method by combining TiCl4, B10H 14 and CH3CN in one reaction vessel and pyrolyzing it at temperatures above 900 °C. Amorphous dark blue colored films were obtained after the pyrolysis reactions. Well-defined spherical shaped grains or particles were observed by SEM. The amorphous films generated contained titanium, however, the determination of the boron content of the films was inconclusive. This one pot method making metal boride thin films has the advantage of being able to dictate the stoichiometry of the reactants. Another part of this work represents the first report of both the use of metal boride materials and the use of a titanium-based compound for the formation of nanotubes. This method provides a facile method for generating well-formed boron-containing carbon nanotubes in a "one-pot" process through an efficient aerosol process. The formation of metal boride corrosion resistant layers was also explored. It was shown that metallic substrates can be effectively boronized using paste mixtures containing boron carbide and borax. The formation of a Fe4B 2 iron boride phase was achieved, however, this iron boride phase does not give enough corrosion protection. The formation of a corrosion resistant metal boride coating with strong adhesion was accomplished by boronization of a thermal sprayed nickel layer on the surface of steel. Surfactants were explored as possible nanoreactors in which metal boride nanoparticles could be formed to use as nanotube growth catalyst via room temperature reaction. Different surfactants were used, but none of them successfully generated very well dispersed metal boride nanoparticles. Nanoparticles with varying shapes and sizes were generated which were highly amorphous. The carboxylic acid derivative of closo-C2B 10 cages was explored as a ligand in the hydrothermal preparation of coordination polymers with zinc salts. It was found that the stability of the cage is apparently insufficient under these conditions and cage degradation was observed. Consequently, a preliminary investigation of the preparation of dipyridyl derivatives of both the closo-C2B 10 and the closo-B12 cages was performed.

Synthesis and Characterization of YB4 Ceramics

DTIC Science & Technology

2011-06-24

capa bility at temperatures above 2000°C1 with adequate mechani cal properties and oxidation resistance. Refractory metal borides based on HfB2 and ZrB2...increase in the oxidation resistance was accomplished by the addition of the Group IV VI transition metal borides , which was the result of phase...metal borides for use as materials for ultra high temper ature (UHT) applications. However, for instance, yttrium tet raboride, YB4, appears promising as

Finding the Stable Structures of WxN1-x with an ab-initio High-Throughput Approach

DTIC Science & Technology

2014-03-13

cubic boron nitride[4], carbonitrides,[5] and transition metal borides .[6, 7] Over the past several years there has been considerable theoretical...include ionic and covalent structures which seem chemically similar to W-N. These include borides , carbides, oxides, and other nitrides. In this paper we...metallic alloys, [23–27] we extended it to include over fifty new structures. These include nitrides, oxides, borides , and carbides. The important

Magnesium Aluminum Borides as Explosive Materials

DTIC Science & Technology

2011-12-20

Metal Silicides , and Metal Borides by Chemical Vapour Deposition Using Single Organometallic Precursors,” Trans. Inst. Met. Finishing, 72, 127-129...391 (2003). 62. X. Xiaojing, D. Bohua, Q. Zuanhui, and L. Yuanhui, “ Preparation and Synthesis Mechanism of Li-B Alloy,” Rare Metal Materials and...SUPPLEMENTARY NOTES 14. ABSTRACT Metal boride.; and boroo carbide Witted l’"irh Al ’I\\· ere compared co B. Mg. Al Mg:-AJ and Si a.s poteotia! fuel ad.diti

Development of high temperature stable Ohmic and Schottky contacts on n-gallium nitride

NASA Astrophysics Data System (ADS)

Khanna, Rohit

In this work the effort was made to towards develop and investigate high temperature stable Ohmic and Schottky contacts for n type GaN. Various borides and refractory materials were incorporated in metallization scheme to best attain the desired effect of minimal degradation of contacts when placed at high temperatures. This work focuses on achieving a contact scheme using different borides which include two Tungsten Borides (namely W2B, W2B 5), Titanium Boride (TiB2), Chromium Boride (CrB2) and Zirconium Boride (ZrB2). Further a high temperature metal namely Iridium (Ir) was evaluated as a potential contact to n-GaN, as part of continuing improved device technology development. The main goal of this project was to investigate the most promising boride-based contact metallurgies on GaN, and finally to fabricate a High Electron Mobility Transistor (HEMT) and compare its reliability to a HEMT using present technology contact. Ohmic contacts were fabricated on n GaN using borides in the metallization scheme of Ti/Al/boride/Ti/Au. The characterization of the contacts was done using current-voltage measurements, scanning electron microscopy (SEM) and Auger Electron Spectroscopy (AES) measurements. The contacts formed gave specific contact resistance of the order of 10-5 to 10-6 Ohm-cm2. A minimum contact resistance of 1.5x10-6 O.cm 2 was achieved for the TiB2 based scheme at an annealing temperature of 850-900°C, which was comparable to a regular ohmic contact of Ti/Al/Ni/Au on n GaN. When some of borides contacts were placed on a hot plate or in hot oven for temperature ranging from 200°C to 350°C, the regular metallization contacts degraded before than borides ones. Even with a certain amount of intermixing of the metallization scheme the boride contacts showed minimal roughening and smoother morphology, which, in terms of edge acuity, is crucial for very small gate devices. Schottky contacts were also fabricated and characterized using all the five boride compounds. The barrier height obtained on n GaN was ˜0-5-0.6 eV which was low compared to those obtained by Pt or Ni. This barrier height is too low for use as a gate contact and they can only have limited use, perhaps, in gas sensors where large leakage current can be tolerated in exchange for better thermal reliability. AlGaN/GaN High Electron Mobility Transistors (HEMTs) were fabricated with Ti/Al/TiB2/Ti/Au source/drain ohmic contacts and a variety of gate metal schemes (Pt/Au, Ni/Au, Pt/TiB2/Au or Ni/TiB 2/Au) and were subjected to long-term annealing at 350°C. By comparison with companion devices with conventional Ti/Al/Pt/Au ohmic contacts and Pt/Au gate contacts, the HEMTs with boride-based ohmic metal and either Pt/Au, Ni/Au or Ni/TiB2/Au gate metal showed superior stability of both source-drain current and transconductance after 25 days aging at 350°C. The need for sputter deposition of the borides causes' problem in achieving significantly lower specific contact resistance than with conventional schemes deposited using e-beam evaporation. The borides also seem to be, in general, good getters for oxygen leading to sheet resistivity issues. Ir/Au Schottky contacts and Ti/Al/Ir/Au ohmic contacts on n-type GaN were investigated as a function of annealing temperature and compared to their more common Ni-based counterparts. The Ir/Au ohmic contacts on n-type GaN with n˜1017 cm-3 exhibited barrier heights of 0.55 eV after annealing at 700°C and displayed less intermixing of the contact metals compared to Ni/Au. A minimum specific contact resistance of 1.6 x 10-6 O.cm2 was obtained for the ohmic contacts on n-type GaN with n˜1018 cm-3 after annealing at 900°C. The measurement temperature dependence of contact resistance was similar for both Ti/Al/Ir/Au and Ti/Al/Ni/Au, suggesting the same transport mechanism was present in both types of contacts. The Ir-based ohmic contacts displayed superior thermal aging characteristics at 350°C. Auger Electron Spectroscopy showed that Ir is a superior diffusion barrier at these moderate temperatures than Ni.

Fabrication and Characterization of Plasma Electrolytic Borocarburized Layers on Q235 Low-Carbon Steel at Different Discharge Voltages

NASA Astrophysics Data System (ADS)

Wang, Bin; Wu, Jie; Jin, Xiaoyue; Wu, Xiaoling; Wu, Zhenglong; Xue, Wenbin

The influence of applied voltage on the plasma electrolytic borocarburizing (PEB/C) layer of Q235 low-carbon steel in high-concentration borax solution was investigated. XRD and XPS spectra of PEB/C layer confirmed that the modified boride layer mainly consisted of Fe2B phase, and the FeB phase only exists in the loose top layer. The applied voltage on Q235 steel played a key role in determining the properties of hardened layers. The thickness and microhardness of boride layers increased with the increase of the applied voltage, which led to superior corrosion and wear resistances of Q235 low-carbon steel. The diffusion coefficient (D) of boride layer at 280, 300 and 330V increased with borocarburizing temperature and ranged from 0.062×10-12m2/s to 0.462×10-12m2/s. The activation energy (Q) of boride layer growth during PEB/C treatment was only 52.83kJṡmol-1, which was much lower than that of the conventional boriding process.

Niobium boride layers deposition on the surface AISI D2 steel by a duplex treatment

DOE Office of Scientific and Technical Information (OSTI.GOV)

Kon, O., E-mail: okon42@htotmail.com; Pazarlioglu, S.; Sen, S.

2015-03-30

In this paper, we investigated the possibility of deposition of niobium boride layers on the surface of AISI D2 steel by a duplex treatment. At the first step of duplex treatment, boronizing was performed on AISI D2 steel samples at 1000{sup o}C for 2h and then pre-boronized samples niobized at 850°C, 900°C and 950°C using thermo-reactive deposition method for 1–4 h. The presence of the niobium boride layers such as NbB, NbB{sub 2} and Nb{sub 3}B{sub 4} and also iron boride phases such as FeB, Fe{sub 2}B were examined by X-ray diffraction analysis. Scanning electron microscope (SEM) and micro-hardness measurementsmore » were realized. Experimental studies showed that the depth of the coating layers increased with increasing temperature and times and also ranged from 0.42 µm to 2.43 µm, depending on treatment time and temperature. The hardness of the niobium boride layer was 2620±180 HV{sub 0.005}.« less

Crystal structure and phase stability of tungsten borides

NASA Astrophysics Data System (ADS)

Li, Quan; Zhou, Dan; Ma, Yanming; Chen, Changfeng

2013-03-01

We address the longstanding and controversial issue of ground-state structures of technically important tungsten borides using a first-principles structural search method via a particle-swarm optimization (PSO) algorithm. We have explored a large set of stable chemical compositions (convex hull) and clarified the ground-state structures for a wide range of boron concentrations, including W2B, W3B2,WB,W2B3, WB2,W2B5, WB3, and WB4. We further assessed relative stability of various tungsten borides and compared the calculated results with previously reported experimental data. The phase diagram predicted by the presented calculations may serve as a useful guide for synthesis of a variety of tungsten borides. This work was supported by DOE Grant No. DE-FC52-06NA26274.

High Energy Advanced Thermal Storage for Spacecraft Solar Thermal Power and Propulsion Systems

DTIC Science & Technology

2011-10-12

Vol. 108, No. 6, June 1961, pp. 568-572. 38. Storms, E. and Mueller, B., "Phase Relations and Thermodynamic Properties of Transition Metal Borides ...T., and Naka, S., "Formation Process of Tungsten Borides by Solid State Reaction Between Tungsten and Amorphous Boron," Journal of Materials...Molybdenum- Borides ," Journal of Metals, September 1952, pp. 983-988. 41. Ellis, R.C., “Various Preparations of Elemental Boron,” Proceedings of the 1st

Finding the Stable Structures of N1-xWx with an Ab Initio High-Throughput Approach

DTIC Science & Technology

2015-05-26

W. These include borides , carbides, oxides, and other nitrides. We also invented many structures to mimic the random pattern of vacancies on both the...structures. These include nitrides, oxides, borides , and carbides, as well as supercells of standard structures with atoms removed to mimic the random patter...1930). [15] R. Kiessling and Y. H. Liu, Thermal stability of the chromium, iron, and tungsten borides in streaming ammonia and the existence of a new

Molten Boron Phase-Change Thermal Energy Storage to Augment Solar Thermal Propulsion Systems

DTIC Science & Technology

2011-07-13

Thermodynamic Properties of Transition Metal Borides . I. The Molybdenum-boron system and Elemental Boron," Journal of Physical Chemistry, Vol. 81...February 1977, pp. 318-324. 38Itoh, H., Matsudaira, T., and Naka, S., "Formation Process of Tungsten Borides by Solid State Reaction Between Tungsten...Molybdenum-Boron and Some Properties of The Molybdenum- Borides ," Journal of Metals, September 1952, pp. 983-988. 40Stout, N. D., Mar, R. W., and Boo, W. O

Effects of Tungsten Addition on the Microstructure and Corrosion Resistance of Fe-3.5B Alloy in Liquid Zinc

PubMed Central

Liu, Xin; Wang, Mengmeng; Yin, Fucheng; Ouyang, Xuemei; Li, Zhi

2017-01-01

The effects of tungsten addition on the microstructure and corrosion resistance of Fe-3.5B alloys in a liquid zinc bath at 520 °C were investigated by means of scanning electron microscopy, X-ray diffraction and electron probe micro-analysis. The microstructure evolution in different alloys is analyzed and discussed using an extrapolated Fe-B-W ternary phase diagram. Experimental results show that there are three kinds of borides, the reticular (Fe, W)2B, the rod-like (Fe, W)3B and flower-like FeWB. The addition of tungsten can refine the microstructure and improve the stability of the reticular borides. Besides, it is beneficial to the formation of the metastable (Fe, W)3B phase. The resultant Fe-3.5B-11W (wt %) alloy possesses excellent corrosion resistance to liquid zinc. When tungsten content exceeds 11 wt %, the formed flower-like FeWB phase destroys the integrity of the reticular borides and results in the deterioration of the corrosion resistance. Also, the corrosion failure resulting from the spalling of borides due to the initiation of micro-cracks in the grain boundary of borides is discussed in this paper. PMID:28772759

Non-Contact Tabletop Mechanical Testing of Ultra-High Temperature Ceramics

DTIC Science & Technology

2012-05-01

class of refractory materials including transition metal borides , carbides and nitrides e.g. ZrB2l HfB2) ZrC, HfC, TaC, HfN and ZrN. They recently...ike oxidizing atmospheres, at very high temperatures Refractory borides like ZrB2 and HfB2 have extremely high melting temperatures (over 3000°C...But borides are very poor in oxidation resistance, due to the nature of thär oxides Non-protective ZrCfe or Hf02 and volatile liquid B203. Addition

Dislocation Decorrelation and Relationship to Deformation Microtwins during Creep of a Gamma’ Precipitate Strengthened Ni-based Superalloy

DTIC Science & Technology

2011-11-01

Deformation is highly localized around stress concentrators such as carbides, borides and serrated grain boundaries, which act as sources of a/2h110i...highly localized around stress concentrators such as carbides, borides and serrated grain boundaries, which act as sources of a/2h110i matrix-type...phase at different thicknesses. 7328 R.R. Unocic et al. / Acta Materialia 59 (2011) 7325–7339 the image. A number of carbide and/or boride phases are

Beta cell device using icosahedral boride compounds

DOEpatents

Aselage, Terrence L.; Emin, David

2002-01-01

A beta cell for converting beta-particle energies into electrical energy having a semiconductor junction that incorporates an icosahedral boride compound selected from B.sub.12 As.sub.2, B.sub.12 P.sub.2, elemental boron having an .alpha.-rhombohedral structure, elemental boron having a .beta.-rhombohedral structure, and boron carbides of the chemical formula B.sub.12-x C.sub.3-x, where 0.15

The effect of boriding on wear resistance of cold work tool steel

NASA Astrophysics Data System (ADS)

Anzawa, Y.; Koyama, S.; Shohji, I.

2017-05-01

Recently, boriding has attracted extensive attention as surface stiffening processing of plain steel. In this research, the influence of processing time on the formation layer of cold work tool steel (KD11MAX) by Al added fused salt bath was examined. In addition, in order to improve the abrasion resistance of KD11MAX, the effect of the treatment of boronization on the formation layer has been investigated. Boriding were performed in molten borax which contained about 10 mass% Al at processing time of 1.8 ~ 7.2 ks (processing temperature of 1303 K). As a result of the examination, the hardness of the boriding layer becomes about 1900 HV when the processing time of 3.6 ks. Also the abrasion resistance has improved remarkably. Furthermore, it was revealed that the formation layer was boronized iron from the Vickers hardness and analysis of the X-ray diffraction measurement.

Metal Immiscibility Route to Synthesis of Ultrathin Carbides, Borides, and Nitrides.

PubMed

Wang, Zixing; Kochat, Vidya; Pandey, Prafull; Kashyap, Sanjay; Chattopadhyay, Soham; Samanta, Atanu; Sarkar, Suman; Manimunda, Praveena; Zhang, Xiang; Asif, Syed; Singh, Abhisek K; Chattopadhyay, Kamanio; Tiwary, Chandra Sekhar; Ajayan, Pulickel M

2017-08-01

Ultrathin ceramic coatings are of high interest as protective coatings from aviation to biomedical applications. Here, a generic approach of making scalable ultrathin transition metal-carbide/boride/nitride using immiscibility of two metals is demonstrated. Ultrathin tantalum carbide, nitride, and boride are grown using chemical vapor deposition by heating a tantalum-copper bilayer with corresponding precursor (C 2 H 2 , B powder, and NH 3 ). The ultrathin crystals are found on the copper surface (opposite of the metal-metal junction). A detailed microscopy analysis followed by density functional theory based calculation demonstrates the migration mechanism, where Ta atoms prefer to stay in clusters in the Cu matrix. These ultrathin materials have good interface attachment with Cu, improving the scratch resistance and oxidation resistance of Cu. This metal-metal immiscibility system can be extended to other metals to synthesize metal carbide, boride, and nitride coatings. © 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Kinetics and Tribological Characterization of Pack-Borided AISI 1025 Steel

NASA Astrophysics Data System (ADS)

Gómez-Vargas, O. A.; Keddam, M.; Ortiz-Domínguez, M.

2017-03-01

In this present study, the AISI 1025 steel was pack-borided in the temperature range of 1,123-1,273 K for different treatment times ranging from 2 to 8 h. A diffusion model was suggested to estimate the boron diffusion coefficients in the Fe2B layers. As a result, the boron activation energy for the AISI 1025 steel was estimated as 174.36 kJ/mol. This value of energy was compared with the literature data. To extend the validity of the present model, other additional boriding conditions were considered. The boride layers formed on the AISI 1025 steel were characterized by the following experimental techniques: scanning electron microscopy, X-ray diffraction analysis and the Daimler-Benz Rockwell-C indentation technique. Finally, the scratch and pin-on-disc tests for wear resistance were achieved using an LG Motion Ltd and a CSM tribometer, respectively, under dry sliding conditions.

Role of atomic bonding for compound and glass formation in Ni-Si, Pd-Si, and Ni-B systems

NASA Astrophysics Data System (ADS)

Tanaka, K.; Saito, T.; Suzuki, K.; Hasegawa, R.

1985-11-01

Valence electronic structures of crystalline compounds and glassy alloys of Ni silicides, Pd silicides, and Ni borides are studied by soft-x-ray spectroscopy over wide ranges of Si and B concentrations. The samples prepared include bulk compounds, glassy ribbons, and amorphous sputtered films. Silicon Kβ emissions of Ni and Pd silicides generally consist of a prominent peak fixed at ~=4.5 and ~=5.8 eV below the Fermi level EF, respectively, with a shoulder near EF which grows and shifts toward lower energy with increasing Si concentration. The former is identified as due to Si p-like states forming Si 3p-Ni 3d or Si 3p-Pd 4d bonding states while the latter as due to the corresponding antibonding states. Ni L3 and Pd L3 emissions of these silicides indicate that Ni 3d and Pd 4d states lie between the above two states. These local electronic configurations are consistent with partial-density-of-states (PDOS) calculations performed by Bisi and Calandra. Similar electronic configurations are suggested for Ni borides from B Kα and Ni L3 emissions. Differences of emission spectra between compounds and glasses of similar compositions are rather small, but some enhancement of the contribution of antibonding states to the PDOS near EF is suggested for certain glasses over that of the corresponding compounds. These features are discussed in connection with the compound stability and glass formability.

Effect of borides on hot deformation behavior and microstructure evolution of powder metallurgy high borated stainless steel

DOE Office of Scientific and Technical Information (OSTI.GOV)

Zhou, Xuan

To investigate borides effect on the hot deformation behavior and microstructure evolution of powder metallurgy high borated stainless steel, hot compression tests at the temperatures of 950– 1150 °C and the strain rates of 0.01– 10 s{sup −1} were performed. Flow stress curves indicated that borides increased the material's stress level at low temperature but the strength was sacrificed at temperatures above 1100 °C. A hyperbolic-sine equation was used to characterize the dependence of the flow stress on the deformation temperature and strain rate. The hot deformation activation energy and stress exponent were determined to be 355 kJ/mol and 3.2,more » respectively. The main factors leading to activation energy and stress exponent of studied steel lower than those of commercial 304 stainless steel were discussed. Processing maps at the strains of 0.1, 0.3, 0.5, and 0.7 showed that flow instability mainly concentrated at 950– 1150 °C and strain rate higher than 0.6 s{sup −1}. Results of microstructure illustrated that dynamic recrystallization was fully completed at both high temperature-low strain rate and low temperature-high strain rate. In the instability region cracks were generated in addition to cavities. Interestingly, borides maintained a preferential orientation resulting from particle rotation during compression. - Highlights: •The decrement of activation energy was affected by boride and boron solution. •The decrease of stress exponent was influenced by composition and Cottrell atmosphere. •Boride represented a preferential orientation caused by particle rotation.« less

On the Correlation between Morphology of alpha and Its Crystallographic Orientation Relationship with TiB and Beta in Boron Containing Ti-5Al-5Mo-5V-3Cr-0.5Fe Alloy (Preprint)

DTIC Science & Technology

2012-01-01

submitted to Metallurgical Transactions. This document contains color. 14. ABSTRACT While the role of borides on the microstructure of titanium...Ohio, U.S.A. Abstract While the role of borides on the microstructure of titanium alloys has been discussed in many previous reports, this paper...morphology of  precipitates nucleating from boride precipitates present in the  matrix of a titanium alloy; and (b) to investigate the role of presence or

Effect of mechanical activation on jell boronizing treatment of the AISI 4140

NASA Astrophysics Data System (ADS)

Yılmaz, S. O.; Karataş, S.

2013-06-01

The article presents the effect of mechanical activation on the growth kinetics of boride layer of boronized AISI 4140 steel. The samples were boronized by ferroboron + (SiO2-Na2O) powders for 873-1173 K temperature and 2, 4, 6 and 8 h times, respectively. The morphology and types of borides formed on the surface of AISI 4140 steel substrate were analyzed. Layer growth kinetics were analyzed by measuring the extent of penetration of FeB and Fe2B sublayers as function of treatment time and temperature in the range of 873-1173 K. High diffusivity was obtained by creating a large number of defects through mechanical activation in the form of nanometer sized crystalline particles through the repeated fracturing and cold-welding of the powder particles, and a depth of 100 μm was found in the specimen borided by the 2 h MA powders, for 4 h and 1073 K, where 2000-2350 HV were measured. Consequently, the application conditions of boronizing were improved by usage of mechanical activation. The preferred Fe2B boride without FeB could be formed in the boride layer under 973 K boronizing temperature by mechanically activated by ferroboron + sodium silicate powder mixture due to the decrease of the activation energy.

Yttria Nanoparticle Reinforced Commercially Pure (CP) Titanium

DTIC Science & Technology

2011-09-01

nanoparticles as well as titanium boride (TiB) reinforcements were produced through gas atomization. After consolidation and extrusion, room temperature...pure FE iron O oxygen Ti titanium TiB titanium boride TYS tensile yield strength UTS ultimate tensile strength wt% weight percent Y2O3

Growth kinetics of borided layers: Artificial neural network and least square approaches

NASA Astrophysics Data System (ADS)

Campos, I.; Islas, M.; Ramírez, G.; VillaVelázquez, C.; Mota, C.

2007-05-01

The present study evaluates the growth kinetics of the boride layer Fe 2B in AISI 1045 steel, by means of neural networks and the least square techniques. The Fe 2B phase was formed at the material surface using the paste boriding process. The surface boron potential was modified considering different boron paste thicknesses, with exposure times of 2, 4 and 6 h, and treatment temperatures of 1193, 1223 and 1273 K. The neural network and the least square models were set by the layer thickness of Fe 2B phase, and assuming that the growth of the boride layer follows a parabolic law. The reliability of the techniques used is compared with a set of experiments at a temperature of 1223 K with 5 h of treatment time and boron potentials of 2, 3, 4 and 5 mm. The results of the Fe 2B layer thicknesses show a mean error of 5.31% for the neural network and 3.42% for the least square method.

Selection of peptides binding to metallic borides by screening M13 phage display libraries.

PubMed

Ploss, Martin; Facey, Sandra J; Bruhn, Carina; Zemel, Limor; Hofmann, Kathrin; Stark, Robert W; Albert, Barbara; Hauer, Bernhard

2014-02-10

Metal borides are a class of inorganic solids that is much less known and investigated than for example metal oxides or intermetallics. At the same time it is a highly versatile and interesting class of compounds in terms of physical and chemical properties, like semiconductivity, ferromagnetism, or catalytic activity. This makes these substances attractive for the generation of new materials. Very little is known about the interaction between organic materials and borides. To generate nanostructured and composite materials which consist of metal borides and organic modifiers it is necessary to develop new synthetic strategies. Phage peptide display libraries are commonly used to select peptides that bind specifically to metals, metal oxides, and semiconductors. Further, these binding peptides can serve as templates to control the nucleation and growth of inorganic nanoparticles. Additionally, the combination of two different binding motifs into a single bifunctional phage could be useful for the generation of new composite materials. In this study, we have identified a unique set of sequences that bind to amorphous and crystalline nickel boride (Ni3B) nanoparticles, from a random peptide library using the phage display technique. Using this technique, strong binders were identified that are selective for nickel boride. Sequence analysis of the peptides revealed that the sequences exhibit similar, yet subtle different patterns of amino acid usage. Although a predominant binding motif was not observed, certain charged amino acids emerged as essential in specific binding to both substrates. The 7-mer peptide sequence LGFREKE, isolated on amorphous Ni3B emerged as the best binder for both substrates. Fluorescence microscopy and atomic force microscopy confirmed the specific binding affinity of LGFREKE expressing phage to amorphous and crystalline Ni3B nanoparticles. This study is, to our knowledge, the first to identify peptides that bind specifically to amorphous and to crystalline Ni3B nanoparticles. We think that the identified strong binding sequences described here could potentially serve for the utilisation of M13 phage as a viable alternative to other methods to create tailor-made boride composite materials or new catalytic surfaces by a biologically driven nano-assembly synthesis and structuring.

Synthesis of Binary Transition Metal Nitrides, Carbides and Borides from the Elements in the Laser-Heated Diamond Anvil Cell and Their Structure-Property Relations

PubMed Central

Friedrich, Alexandra; Winkler, Björn; Juarez-Arellano, Erick A.; Bayarjargal, Lkhamsuren

2011-01-01

Transition metal nitrides, carbides and borides have a high potential for industrial applications as they not only have a high melting point but are generally harder and less compressible than the pure metals. Here we summarize recent advances in the synthesis of binary transition metal nitrides, carbides and borides focusing on the reaction of the elements at extreme conditions generated within the laser-heated diamond anvil cell. The current knowledge of their structures and high-pressure properties like high-(p,T) stability, compressibility and hardness is described as obtained from experiments. PMID:28824101

Directionally Solidified Eutectic Ceramics for Multifunctional Aerospace Applications

DTIC Science & Technology

2013-01-01

eutectic materials development through a new initiative entitled Boride Eutectic Project. These results first time organize and populate materials...property databases, and utilize an iterative feedback routine to constantly improve the design process of the boride eutectics LaB6-MeB2 (Me = Zr, Hf, Ti

Superabrasive boride and a method of preparing the same by mechanical alloying and hot pressing

DOEpatents

Cook, Bruce A.; Harringa, Joel L.; Russell, Alan M.

2002-08-13

A ceramic material which is an orthorhombic boride of the general formula: AlMgB.sub.14 :X, with X being a doping agent. The ceramic is a superabrasive, and in most instances provides a hardness of 40 GPa or greater.

Theoretical and Experimental Investigations on the Mechanism of Carbothermal Reduction of Zirconia (Preprint)

DTIC Science & Technology

2012-08-01

Properties. Abyss Books, Washington, D.C., 2002. 2. G. Montel, A. Lebugle and H. Pastor. "Manufacture of Materials Containing Refractory Borides ...and ZrO2," International Journal of Refractory Metals and Hard Materials, 17, 235-43 (1999). 10. A.W. Weimer, Carbide, nitride and boride

Adhesive and Cohesive Strength in FeB/Fe2B Systems

NASA Astrophysics Data System (ADS)

Meneses-Amador, A.; Blancas-Pérez, D.; Corpus-Mejía, R.; Rodríguez-Castro, G. A.; Martínez-Trinidad, J.; Jiménez-Tinoco, L. F.

2018-05-01

In this work, FeB/Fe2B systems were evaluated by the scratch test. The powder-pack boriding process was performed on the surface of AISI M2 steel. The mechanical parameters, such as yield stress and Young's modulus of the boride layer, were obtained by the instrumented indentation technique. Residual stresses produced on the boride layer were estimated by using the x-ray diffraction (XRD) technique. The scratch test was performed in order to evaluate the cohesive/adhesive strength of the FeB/Fe2B coating. In addition, a numerical evaluation of the scratch test on boride layers was performed by the finite element method. Maximum principal stresses were related to the failure mechanisms observed by the experimental scratch test. Shear stresses at the interfaces of the FeB/Fe2B/substrate system were also evaluated. Finally, the results obtained provide essential information about the effect of the layer thickness, the residual stresses, and the resilience modulus on the cohesive/adhesive strength in FeB/Fe2B systems.

The Effects of Borides on the Mechanical Properties of TLPB Repaired Inconel 738 Superalloy

NASA Astrophysics Data System (ADS)

Wei, J.; Ye, Y.; Sun, Z.; Zou, G.; Bai, H.; Wu, A.; Liu, L.

2017-10-01

The transient liquid phase diffusion bonding (TLPB) method was used to repair an artificial crack in Inconel 738, which was notched by a femtosecond laser. Mixed ratios of BNi-1a:DF-4B were investigated at the bonding temperature of 1373 K (1100 °C) for 2 to 36 hours. The effect of borides on the mechanical properties of TLPB repaired joints was studied through analysis of the microstructure, fracture path, and morphology observations. The borides formation, morphology, distribution, and joints strength were studied in detail. The results showed that the diffusion of B can either increase or decrease the joint strength, depending on its distribution and morphology. The amount of large blocky Ni-B compounds in the precipitate zone were reduced with increasing holding time, which resulted in an increase in joint strength. Nevertheless, further increasing the holding time led to a decrease in joint strength because of the formation of continuous acicular borides in the diffusion-affected zone. The fracture modes of TLPB joints were also discussed on the basis of the microstructure and fractography.

Micro-Abrasion Wear Resistance of Borided 316L Stainless Steel and AISI 1018 Steel

NASA Astrophysics Data System (ADS)

Reséndiz-Calderon, C. D.; Rodríguez-Castro, G. A.; Meneses-Amador, A.; Campos-Silva, I. E.; Andraca-Adame, J.; Palomar-Pardavé, M. E.; Gallardo-Hernández, E. A.

2017-11-01

The 316L stainless steel has high corrosion resistance but low tribological performance. In different industrial sectors (biomedical, chemical, petrochemical, and nuclear engineering), improvement upon wear resistance of 316L stainless steel components using accessible and inexpensive methods is critical. The AISI 1018 steel is widely used in industry, but its tribological performance is not the best among steels. Therefore, in this study the behavior of the borided 316L stainless steel and 1018 steel is evaluated under micro-abrasion wear. The boriding was carried out at 1223 K over 6 h of exposure time, resulting in a biphase layer composed of FeB/Fe2B phases. In order to evaluate Fe2B phase with no influence from FeB phase, AISI 1018 steel samples were borided at 1273 K for over 20 min and then diffusion annealed at 1273 K over 2 h to obtain a Fe2B mono-phase layer. Micro-abrasion wear resistance was evaluated by a commercial micro-abrasion testing rig using a mix of F-1200 SiC particles with deionized water as abrasive slurry. The obtained wear rates for FeB and Fe2B phases and for the 316L stainless steel were compared. Wear resistance of 316L stainless steel increases after boriding. The wear mechanisms for both phases and for the stainless steel were identified. Also, transient conditions for rolling and grooving abrasion were determined for the FeB and Fe2B phases.

Surface decoration through electrostatic interaction leading to enhanced reactivity: Low temperature synthesis of nanostructured chromium borides (CrB and CrB{sub 2})

DOE Office of Scientific and Technical Information (OSTI.GOV)

Menaka,; Kumar, Bharat; Kumar, Sandeep

The present study describes a novel low temperature route at ambient pressure for the synthesis of nanocrystalline chromium borides (CrB and CrB{sub 2}) without using any flux or additives. The favorable and intimate mixing of nanoparticles of chromium acetate (Cr source) and boron forms an active chromium–boron precursor which decomposes at much lower temperature (400 °C) to form CrB (which is ∼1000 °C less than the known ambient pressure synthesis). The chromium acetate nanoparticles (∼5 nm) decorate the larger boron particles (150–200 nm) due to electrostatic interactions resulting from opposing surface charges of boron (zeta potential:+48.101 mV) and chromium acetatemore » (zeta potential:−4.021 mV) in ethanolic medium and is evident in the TEM micrographs. The above method leads to the formation of pure CrB film like structure at 400 °C and nanospheres (40–60 nm) at 600 °C. Also, chromium diboride (CrB{sub 2}) nanoparticles (25 nm) could be obtained at 1000 °C. - Graphical abstract: Variation of surface charge of reactants, precursor and the products, chromium borides (CrB and CrB{sub 2}). Highlights: ► Novel borothermal reduction process for synthesis of chromium boride. ► Significant lowering of reaction temperature to obtain nanocrystalline chromium boride. ► Enhanced reactivity due to appropriate surface interactions.« less

Investigation of diffusional interaction between P91 grade ferritic steel and Fe-15 wt.%B alloy and study of kinetics of boride formation at high temperature

NASA Astrophysics Data System (ADS)

Rai, Arun Kumar; Vijayashanthi, N.; Tripathy, H.; Hajra, R. N.; Raju, S.; Murugesan, S.; Saroja, S.

2017-11-01

In the present study, the feasibility of employing the indigenously developed ferroboron alloy (Fe-15 wt.%B) as an alternate neutron shield material in combination with 9Cr-based ferritic steel (P91) clad in future Indian fast breeder reactors (FBR), has been investigated from a metallurgical perspective. Towards this goal, a series of diffusion couple experiments have been conducted at three different temperatures namely, 600, 700 and 800 °C for time durations up to 5000 h. The thickness of interaction layer has been monitored using standard metallographic procedures. The experiments revealed that ferroboron/P91 combination exhibited a tendency to form complex intermetallic borides at the interface. The structural and microstructural characterization of the interface confirmed that the reaction layer consists predominantly of borides of Fe and Cr of type FeB, Fe2B, (Fe,Cr)2B and (Fe,Cr)B. The measured variation of interaction layer thickness as a function of time and temperature have been modelled in terms of diffusion mediated interaction. The growth kinetics of borided layer has followed the parabolic law at each temperature, and the apparent activation energy for boride layer formation is found to be of the order of 115 kJ mol-1. This indicates that the kinetics of boriding could be governed by diffusion of B into the P91 matrix. Based on the findings of present study, an extrapolative estimate of the clad attack thickness at 550 °C for 60 years of operating time has been made and it turns out to be 210 ± 15 μm, which is less than the clad thickness of FBR shielding subassembly (4 mm) [1]. Thus, this study confirms that at testing temperatures from 550 to 600 °C, the ferroboron/P91 steel combination can be safely employed for shielding subassembly applications in fast reactors.

Kinetics of electrolysis current reversal boriding of tool steels in a boron-containing oxychloride melt based on CaCl2

NASA Astrophysics Data System (ADS)

Chernov, Ya. B.; Filatov, E. S.

2017-08-01

The kinetics of thermal diffusion boriding in a melt based on calcium chloride with a boron oxide additive is studied using reversed current. The main temperature, concentration, and current parameters of the process are determined. The phase composition of the coating is determined by a metallographic method.

Search for New Superconductors for Energy and Power Applications

DTIC Science & Technology

2014-10-21

superconductors, borides , carbides, silicides, and chalcogenides. In addition, a number of thin film systems have been explored: A15s, superlattices, arrays of...YBa2Cu3O7 Bi2Se3 Eu-Si-C ErRh4B4 Bi2Sr2CaCu2O8 (UD, OD) Sb2Se3 V-Si-C (Ga,Mn)As CuO ZrSe2 Sm-Si-C Hf(FeCo)P Y1-xCaxCrO3 Fe-Te-Se BORIDES Hf-Fe-C-P...Physics, Warsaw, Poland Table III New superconductors, discovered by UCSD MURI team. BORIDES Tc (K) Nb0.9Zr0.1B 11.2 ZrNbxB 9.0 ZrVxB 9.0

Method of boronizing transition metal surfaces

DOEpatents

Koyama, Koichiro; Shimotake, Hiroshi

1983-01-01

A method is presented for preparing a boride layer on a transition metal substrate for use in corrosive environments or as a harden surface in machine applications. This method is particularly useful in treating current collectors for use within a high temperature and corrosive electrochemical cell environment. A melt of a alkali metal boride tetrafluoride salt including such as KF to lower its melting point is prepared including a dissolved boron containing material, for instance NiB, MnB.sub.2, or CrB.sub.2. A transition metal to be coated is immersed in the melt at a temperature of no more than 700.degree. C. and a surface boride layer of that transition metal is formed within a period of about 24 hours on the substrate surface.

Subminiature eddy current transducers for studying boride coatings

NASA Astrophysics Data System (ADS)

Dmitriev, S. F.; Ishkov, A. V.; Malikov, V. N.; Sagalakov, A. M.

2016-07-01

Strengthening of parts and units of machines, increased reliability and longer service life is an important task of modern mechanical engineering. The main objects of study in the work were selected steel 65G and 50HGA, wear-resistant boride coatings ternary system Fe-B-Fe n B which were investigated by scanning electron microscopy and eddy-current nondestructive methods.

Demonstration of Shear Localization in Ultrafine Grained Tungsten Alloys via Powder Metallurgy Processing Route

DTIC Science & Technology

2012-09-01

of a di-tungsten boride (W2B) phase was not detected in the nW-B sample, but the low concentration of boron may have made this phase undetectable by...Split Hopkinson Bar UFG ultrafine grained W2B di-tungsten boride XRD x-ray diffraction NO. OF NO. OF COPIES ORGANIZATION COPIES

Slater-Pauling behavior within quaternary intermetallic borides of the Ti{sub 3}Co{sub 5}B{sub 2} structure-type

DOE Office of Scientific and Technical Information (OSTI.GOV)

Burghaus, Jens; Dronskowski, Richard, E-mail: drons@HAL9000.ac.rwth-aachen.d; Miller, Gordon J.

2009-10-15

First-principles, density-functional studies of several intermetallic borides of the general type M{sub 2}M'Ru{sub 5-n}Rh{sub n}B{sub 2} (n=0-5; M=Sc, Ti, Nb; M'=Fe, Co) show that the variation in saturation magnetic moment with valence-electron count follows a Slater-Pauling curve, with a maximum moment occurring typically at 66 valence electrons. The magnetic moments in these compounds occur primarily from the 3d electrons of the magnetically active M' sites, with some contribution from the Ru/Rh sites via magnetic polarization. Electronic DOS curves reveal that a rigid-band approach is a reasonable approximation for the estimation of saturation moments and the analysis of orbital interactions inmore » this family of complex borides. COHP analyses of the M'-M' orbital interactions indicate optimized interactions in the minority spin states for Co-containing phases, but strong bonding interactions remaining in Fe-containing phases. - Graphical abstract: Theoretically determined (spin-polarized LMTO-GGA) local magnetic moments as a function of the chemical valence Z for various intermetallic borides.« less

Superplastic behavior of two ultrahigh boron steels

NASA Astrophysics Data System (ADS)

Jiménez, J. A.; González-Doncel, G.; Acosta, P.; Ruano, O. A.

1994-06-01

The high-temperature deformation behavior of two ultrahigh boron steels containing 2.2 pct and 4.9 pct B was investigated. Both alloys were processed via powder metallurgy involving gas atomization and hot isostatic pressing (hipping) at various temperatures. After hipping at 700 °C, the Fe-2.2 pct B alloy showed a fine microstructure consisting of l- µm grains and small elongated borides (less than 1 µm) . At 1100 °C, a coarser microstructure with rounded borides was formed. This alloy was superplastic at 850 °C with stress exponents of about two and tensile elongations as high as 435 pct. The microstructure of the Fe-4.9 pct B alloy was similar to that of the Fe-2.2 pct B alloy showing, in addition, coarse borides. This alloy also showed low stress exponent values but lacked high tensile elongation (less than 65 pct), which was attributed to the presence of stress accumulation at the interface between the matrix and the large borides. A change in the activation energy value at the α-γ transformation temperature was seen in the Fe-2.2 pct B alloy. The plastic flow data were in agreement with grain boundary sliding and slip creep models.

Friction and wear of radiofrequency-sputtered borides, silicides, and carbides

NASA Technical Reports Server (NTRS)

Brainard, W. A.; Wheeler, D. R.

1978-01-01

The friction and wear properties of several refractory compound coatings were examined. These compounds were applied to 440 C bearing steel surfaces by radiofrequency (RF) sputtering. The refractory compounds were the titanium and molybdenum borides, the titanium and molybdenum silicides, and the titanium, molybdenum, and boron carbides. Friction testing was done with a pin-on-disk wear apparatus at loads from 0.1 to 5.0 newtons. Generally, the best wear properties were obtained when the coatings were bias sputtered onto 440 C disks that had been preoxidized. Adherence was improved because of the better bonding of the coatings to the iron oxide formed during preoxidation. As a class the carbides provided wear protection to the highest loads. Titanium boride coatings provided low friction and good wear properties to moderate loads.

Low temperature InP /Si wafer bonding using boride treated surface

NASA Astrophysics Data System (ADS)

Huang, Hui; Ren, Xiaomin; Wang, Wenjuan; Song, Hailan; Wang, Qi; Cai, Shiwei; Huang, Yongqing

2007-04-01

An approach for InP /Si wafer bonding based on boride-solution treatment was presented. The bonding energy is higher than the InP fracture energy by annealing at 280°C. An In0.53Ga0.47As/InP multiple-quantum-well (MQW) structure grown on InP was transferred onto Si substrate via the bonding process. X-ray diffraction and photoluminescence reveal that crystal quality of the bonded MQW was preserved. A thin B2O3-POx-SiO2 oxide layer of about 28nm thick at the bonding interface was detected. X-ray photoelectron spectroscopy and Raman analyses indicate that the formation of oxygen bridging bonds by boride treatment is responsible for the strong fusion obtained at such low temperature.

Method of boronizing transition metal surfaces

DOEpatents

Koyama, Koichiro; Shimotake, Hiroshi.

1983-08-16

A method is presented for preparing a boride layer on a transition metal substrate for use in corrosive environments or as a harden surface in machine applications. This method is particularly useful in treating current collectors for use within a high temperature and corrosive electrochemical cell environment. A melt of a alkali metal boride tetrafluoride salt including such as KF to lower its melting point is prepared including a dissolved boron containing material, for instance NiB, MnB[sub 2], or CrB[sub 2]. A transition metal to be coated is immersed in the melt at a temperature of no more than 700 C and a surface boride layer of that transition metal is formed within a period of about 24 hours on the substrate surface. 4 figs.

Taguchi Analysis on the Effect of Process Parameters on Densification During Spark Plasma Sintering of HfB2-20SiC (Preprint)

DTIC Science & Technology

2011-11-01

30 kN pressure and heating rate of 100 K/min. Introduction Boride , carbides and nitrides of the group IVB and VB transition metals are considered...10. Sciti D., Silvestroni L., Nygren M. Spark plasma sintering of Zr- and Hf- borides with decreasing amounts of MoSi2 as sintering aid Journal of

Phase identification in boron-containing powder metallurgy steel using EBSD in combination with EPMA

DOE Office of Scientific and Technical Information (OSTI.GOV)

Wu, Ming-Wei, E-mail: mwwu@ntut.edu.tw; Cai, Wen-Zhang

2016-03-15

Boron (B) is extensively used to induce liquid phase sintering (LPS) in powder metallurgy (PM) steels and thereby increase the densification. The alloying elements in B-containing PM steels affect the boride phase, stability of the boride, the temperature of liquid formation, and the progress of LPS. However, the boride phase has not been systematically identified yet. The main objective of this study was to clarify the influences of alloying elements, including C, Cr, and Ni, on the boride phases using electron backscatter diffraction (EBSD) in combination with electron probe microanalysis (EPMA). Network structures consisting of ferrite, Fe{sub 2}B boride, andmore » Fe{sub 3}C carbide were extensively observed in the Fe–0.4B–0.5C steel. The portions of Fe{sub 2}B were sufficiently larger than those of Fe{sub 3}C, and Fe{sub 3}C was mostly distributed at the interfaces between ferrite and Fe{sub 2}B. Adding 1.5 wt.% Cr or 1.8 wt.% Ni to Fe–0.4B–0.5C steel completely changes the Fe{sub 2}B and Fe{sub 3}C phases to a M{sub 3}(B,C) phase, where M represents the metallic elements, including Fe, Cr, Mo, and Ni. Furthermore, Cr, Mo, B, and C atoms tend to concentrate on the M{sub 3}(B,C) phase, but Ni atoms do not. - Highlights: • Network structures consisting of ferrite, Fe{sub 2}B boride, and Fe{sub 3}C carbide were extensively observed in the Fe–0.4B–0.5C steel. • Adding 1.5 wt.% Cr or 1.8 wt.% Ni to Fe–0.4B–0.5C steel completely transforms the Fe{sub 2}B and Fe{sub 3}C phases to a M{sub 3}(B,C) phase. • Cr, Mo, B, and C atoms tend to concentrate on the M{sub 3}(B,C) phase, but Ni atoms do not.« less

Ferrofluids based on Co-Fe-Si-B amorphous nanoparticles

NASA Astrophysics Data System (ADS)

Wang, Tianqi; Bian, Xiufang; Yang, Chuncheng; Zhao, Shuchun; Yu, Mengchun

2017-03-01

Magnetic Co-Fe-Si-B amorphous nanoparticles were successfully synthesized by chemical reduction method. ICP, XRD, DSC, and TEM were used to investigate the composition, structure and morphology of Co-Fe-Si-B samples. The results show that the Co-Fe-Si-B samples are amorphous, which consist of nearly spherical nanoparticles with an average particle size about 23 nm. VSM results manifest that the saturation magnetization (Ms) of Co-Fe-Si-B samples ranges from 46.37 to 62.89 emu/g. Two kinds of ferrofluids (FFs) were prepared by dispersing Co-Fe-Si-B amorphous nanoparticles and CoFe2O4 nanoparticles in kerosene and silicone oil, respectively. The magnetic properties, stability and viscosity of the FFs were investigated. The FFs with Co-Fe-Si-B samples have a higher Ms and lower coercivity (Hc) than FFs with CoFe2O4 sample. Under magnetic field, the silicone oil-based FFs exhibit high stability. The viscosity of FFs under different applied magnetic fields was measured by a rotational viscometer, indicating that FFs with Co-Fe-Si-B particles present relative strong response to an external magnetic field. The metal-boride amorphous alloy nanoparticles have potential applications in the preparation of magnetic fluids with good stability and good magnetoviscous properties.

Structure of superhard tungsten tetraboride: A missing link between MB2 and MB12 higher borides

PubMed Central

Lech, Andrew T.; Turner, Christopher L.; Mohammadi, Reza; Tolbert, Sarah H.; Kaner, Richard B.

2015-01-01

Superhard metals are of interest as possible replacements with enhanced properties over the metal carbides commonly used in cutting, drilling, and wear-resistant tooling. Of the superhard metals, the highest boride of tungsten—often referred to as WB4 and sometimes as W1–xB3—is one of the most promising candidates. The structure of this boride, however, has never been fully resolved, despite the fact that it was discovered in 1961—a fact that severely limits our understanding of its structure–property relationships and has generated increasing controversy in the literature. Here, we present a new crystallographic model of this compound based on refinement against time-of-flight neutron diffraction data. Contrary to previous X-ray–only structural refinements, there is strong evidence for the presence of interstitial arrangements of boron atoms and polyhedral bonding. The formation of these polyhedra—slightly distorted boron cuboctahedra—appears to be dependent upon the defective nature of the tungsten-deficient metal sublattice. This previously unidentified structure type has an intermediary relationship between MB2 and MB12 type boride polymorphs. Manipulation of the fractionally occupied metal and boron sites may provide insight for the rational design of new superhard metals. PMID:25733870

Analysis of boron carbides' electronic structure

NASA Technical Reports Server (NTRS)

Howard, Iris A.; Beckel, Charles L.

1986-01-01

The electronic properties of boron-rich icosahedral clusters were studied as a means of understanding the electronic structure of the icosahedral borides such as boron carbide. A lower bound was estimated on bipolaron formation energies in B12 and B11C icosahedra, and the associated distortions. While the magnitude of the distortion associated with bipolaron formation is similar in both cases, the calculated formation energies differ greatly, formation being much more favorable on B11C icosahedra. The stable positions of a divalent atom relative to an icosahedral borane was also investigated, with the result that a stable energy minimum was found when the atom is at the center of the borane, internal to the B12 cage. If incorporation of dopant atoms into B12 cages in icosahedral boride solids is feasible, novel materials might result. In addition, the normal modes of a B12H12 cluster, of the C2B10 cage in para-carborane, and of a B12 icosahedron of reduced (D sub 3d) symmetry, such as is found in the icosahedral borides, were calculated. The nature of these vibrational modes will be important in determining, for instance, the character of the electron-lattice coupling in the borides, and in analyzing the lattice contribution to the thermal conductivity.

Electrochemical Corrosion Behavior of Spray-Formed Boron-Modified Supermartensitic Stainless Steel

NASA Astrophysics Data System (ADS)

Zepon, Guilherme; Nogueira, Ricardo P.; Kiminami, Claudio S.; Botta, Walter J.; Bolfarini, Claudemiro

2017-04-01

Spray-formed boron-modified supermartensitic stainless steel (SMSS) grades are alloys developed to withstand severe wear conditions. The addition of boron to the conventional chemical composition of SMSS, combined with the solidification features promoted by the spray forming process, leads to a microstructure composed of low carbon martensitic matrix reinforced by an eutectic network of M2B-type borides, which considerably increases the wear resistance of the stainless steel. Although the presence of borides in the microstructure has a very beneficial effect on the wear properties of the alloy, their effect on the corrosion resistance of the stainless steel was not comprehensively evaluated. The present work presents a study of the effect of boron addition on the corrosion resistance of the spray-formed boron-modified SMSS grades by means of electrochemical techniques. The borides fraction seems to have some influence on the repassivation kinetics of the spray-formed boron-modified SMSS. It was shown that the Cr content of the martensitic matrix is the microstructural feature deciding the corrosion resistance of this sort of alloys. Therefore, if the Cr content in the alloy is increased to around 14 wt pct to compensate for the boron consumed by the borides formation, the corrosion resistance of the alloy is kept at the same level of the alloy without boron addition.

A Crossover from High Stiffness to High Hardness: The Case of Osmium and Its Borides

NASA Astrophysics Data System (ADS)

Bian, Yongming; Liu, Xiaomei; Li, Anhu; Liang, Yongcheng

2016-09-01

Transition-metal light-element compounds are currently raising great expectations for hard and superhard materials. Using the widely attracting osmium (Os) and its borides (OsB, Os2B3 and OsB2) as prototypes, we demonstrate by first-principles calculations that heavy transition metals, which possess high stiffness but low hardness, can be converted into highly hard materials by incorporating of light elements to form compounds. Such a crossover is a manifestation that the underlying sources of high stiffness and high hardness are fundamentally different. The stiffness is related to elastic deformation that is closely associated with valence electron density, whereas the hardness depends strongly on plastic deformation that is determined by bonding nature. Therefore, the incorporation of light atoms into transition metal should be a valid pathway of designing hard and superhard materials. This strategy is in principle also applicable to other transition-metal borides, carbides, and nitrides.

Investigation of the structure and properties of boron-containing coatings obtained by electron-beam treatment

DOE Office of Scientific and Technical Information (OSTI.GOV)

Krivezhenko, Dina S., E-mail: dinylkaa@yandex.ru; Drobyaz, Ekaterina A., E-mail: ekaterina.drobyaz@yandex.ru; Bataev, Ivan A., E-mail: ivanbataev@ngs.ru

2015-10-27

An investigation of surface-hardened materials obtained by cladding with an electron beam injected into the air atmosphere was carried out. Structural investigations of coatings revealed that an increase in boron carbide concentration in a saturating mixture contributed to a rise of a volume fraction of iron borides in coatings. The maximum hardened depth reached 2 mm. Hardened layers were characterized by the formation of heterogeneous structure which consisted of iron borides and titanium carbides distributed uniformly in the eutectic matrix. Areas of titanium boride conglomerations were detected. It was found that an increase in the boron carbide content led to anmore » enhancement in hardness of the investigated materials. Friction testing against loosely fixed abrasive particles showed that electron-beam cladding of powder mixtures containing boron carbides, titanium, and iron in air atmosphere allowed enhancing a resistance of materials hardened in two times.« less

Thermodynamical and thermoelectric properties of boron doped YPd{sub 3} and YRh{sub 3}

DOE Office of Scientific and Technical Information (OSTI.GOV)

Dwivedi, Shalini; Sharma, Yamini, E-mail: sharma.yamini62@gmail.com; Sharma, Ramesh

2016-05-23

The structural, electronic, thermal, and optical properties of borides of cubic non-magnetic YX{sub 3} (X=Rh, Pd) compounds and their borides which crystallize in the AuCu{sub 3} structure have been studied using the density functional theory (DFT). The flat bands in the vicinity of E{sub F} which are associated with superconductivity appear in YPd{sub 3} and YRh{sub 3} band structures. However, the B s-states enhance the flat band only in YRh{sub 3}B. The optical properties clearly show that boron insertion modifies the absorption and transmittance. The YX{sub 3} alloys and their borides exhibit valuable changes in the thermopower and ZT. Itmore » is observed that the properties of the Y-X intermetallics change significantly for the Y-Rh and Y-Pd alloys and the presence of single boron atom modifies the properties to a great extent.« less

Investigation of the structure and properties of boron-containing coatings obtained by electron-beam treatment

NASA Astrophysics Data System (ADS)

Krivezhenko, Dina S.; Drobyaz, Ekaterina A.; Bataev, Ivan A.; Chuchkova, Lyubov V.

2015-10-01

An investigation of surface-hardened materials obtained by cladding with an electron beam injected into the air atmosphere was carried out. Structural investigations of coatings revealed that an increase in boron carbide concentration in a saturating mixture contributed to a rise of a volume fraction of iron borides in coatings. The maximum hardened depth reached 2 mm. Hardened layers were characterized by the formation of heterogeneous structure which consisted of iron borides and titanium carbides distributed uniformly in the eutectic matrix. Areas of titanium boride conglomerations were detected. It was found that an increase in the boron carbide content led to an enhancement in hardness of the investigated materials. Friction testing against loosely fixed abrasive particles showed that electron-beam cladding of powder mixtures containing boron carbides, titanium, and iron in air atmosphere allowed enhancing a resistance of materials hardened in two times.

Crystal structures and compressibility of novel iron borides Fe{sub 2}B{sub 7} and Fe{sub x}B{sub 50} synthesized at high pressure and high temperature

DOE Office of Scientific and Technical Information (OSTI.GOV)

Bykova, E., E-mail: elena.bykova@uni-bayreuth.de; Laboratory of Crystallography, University of Bayreuth, D-95440 Bayreuth; Gou, H.

2015-10-15

We present here a detailed description of the crystal structures of novel iron borides, Fe{sub 2}B{sub 7} and Fe{sub x}B{sub 50} with various iron content (x=1.01(1), 1.04(1), 1.32(1)), synthesized at high pressures and high temperatures. As revealed by high-pressure single-crystal X-ray diffraction, the structure of Fe{sub 2}B{sub 7} possesses short incompressible B–B bonds, which make it as stiff as diamond in one crystallographic direction. The volume compressibility of Fe{sub 2}B{sub 7} (the bulk modulus K{sub 0}= 259(1.8) GPa, K{sub 0}′= 4 (fixed)) is even lower than that of FeB{sub 4} and comparable with that of MnB{sub 4}, known for highmore » bulk moduli among 3d metal borides. Fe{sub x}B{sub 50} adopts the structure of the tetragonal δ-B, in which Fe atoms occupy an interstitial position. Fe{sub x}B{sub 50} does not show considerable anisotropy in the elastic behavior. - Graphical abstract: Crystal structures of novel iron borides, Fe{sub 2}B{sub 7} and Fe{sub x}B{sub 50} (x=1.01(1), 1.04(1), 1.32(1)). - Highlights: • Novel iron borides, Fe{sub 2}B{sub 7} and Fe{sub x}B{sub 50}, were synthesized under HPHT conditions. • Fe{sub 2}B{sub 7} has a unique orthorhombic structure (space group Pbam). • Fe{sub 2}B{sub 7} possesses short incompressible B–B bonds that results in high bulk modulus. • Fe{sub x}B{sub 50} adopts the structure of the tetragonal δ-B composed of B{sub 12} icosahedra. • In Fe{sub x}B{sub 50} intraicosahedral bonds are stiffer than intericosahedral ones.« less

Quantitative Electron-Excited X-Ray Microanalysis of Borides, Carbides, Nitrides, Oxides, and Fluorides with Scanning Electron Microscopy/Silicon Drift Detector Energy-Dispersive Spectrometry (SEM/SDD-EDS) and NIST DTSA-II.

PubMed

Newbury, Dale E; Ritchie, Nicholas W M

2015-10-01

A scanning electron microscope with a silicon drift detector energy-dispersive X-ray spectrometer (SEM/SDD-EDS) was used to analyze materials containing the low atomic number elements B, C, N, O, and F achieving a high degree of accuracy. Nearly all results fell well within an uncertainty envelope of ±5% relative (where relative uncertainty (%)=[(measured-ideal)/ideal]×100%). Quantification was performed with the standards-based "k-ratio" method with matrix corrections calculated based on the Pouchou and Pichoir expression for the ionization depth distribution function, as implemented in the NIST DTSA-II EDS software platform. The analytical strategy that was followed involved collection of high count (>2.5 million counts from 100 eV to the incident beam energy) spectra measured with a conservative input count rate that restricted the deadtime to ~10% to minimize coincidence effects. Standards employed included pure elements and simple compounds. A 10 keV beam was employed to excite the K- and L-shell X-rays of intermediate and high atomic number elements with excitation energies above 3 keV, e.g., the Fe K-family, while a 5 keV beam was used for analyses of elements with excitation energies below 3 keV, e.g., the Mo L-family.

The effect of melt refining upon inclusions in aluminum

NASA Astrophysics Data System (ADS)

Simensen, C. J.

1982-03-01

A series of aluminum melts has been refined with respect to inclusions by use of ALCOA 469, FILD, or SNIF. The content and size distribution of inclusions in the original-and the refined melts-have been measured by use of neutron activation (oxygen content), gas chromatography (carbide content), sedimentation analysis, and dissolution of metal in hydrochloric acid and subsequent analysis of oxides by means of a Coulter Counter. All the units tested have a beneficial effect and decrease the inclusion content, but the number of analyses are too few to make general conclusions. However, for melts cleaned by use of SNIF, it was found that oxides larger than 50 μm in cross section and borides larger than 20 μm in diameter were removed, while the smaller borides were agglomerated only. The effect of FILD and ALCOA 469 upon the melt tested was removal of borides larger than 5-10 μ m and oxides larger than 15μm in diameter, respectively.

Interfacial reactions in borsic/Ti-3Al-2-1/2V composite

NASA Technical Reports Server (NTRS)

Rao, V. B.; Houska, C. R.; Unnam, J.; Brewer, W. D.; Tenney, D. R.

1979-01-01

The paper provides a detailed X-ray characterization of a borsic/Ti-3Al-2-1/2V composite, and to correlate the relative intensities of the reaction products with the mechanical properties. Based on X-ray integrated intensity data two stages of interface reactions were identified: during the first stage there is a simultaneous interdiffusion of Si, C, and Ti atoms at the filament/matrix interface resulting in the formation of Ti5Si3, TiSi and small amounts of TiSi2 and TiC. The second stage is associated with considerable TiSi2 and boride formation. It appears that the alpha-phase of Ti is more reactive in forming silicides and borides than the beta-phase. The silicide intensities and the reaction zone thicknesses are shown to be directly related to the reduction of the ultimate tensile strength by thermal degradation, and the results indicate that silicide reaction products are as detrimental to strength as the borides.

A Simple Kinetic Model for the Growth of Fe2B Layers on AISI 1026 Steel During the Powder-pack Boriding

NASA Astrophysics Data System (ADS)

Flores-Rentería, M. A.; Ortiz-Domínguez, M.; Keddam, M.; Damián-Mejía, O.; Elias-Espinosa, M.; Flores-González, M. A.; Medina-Moreno, S. A.; Cruz-Avilés, A.; Villanueva-Ibañez, M.

2015-02-01

This work focused on the determination of boron diffusion coefficient through the Fe2B layers on AISI 1026 steel using a mathematical model. The suggested model solves the mass balance equation at the (Fe2B/substrate) interface. This thermochemical treatment was carried out in the temperature range of 1123-1273 K for a treatment time ranging from 2 to 8 h. The generated boride layers were characterized by different experimental techniques such as light optical microscopy, scanning electron microscopy, XRD analysis and the Daimler-Benz Rockwell-C indentation technique. As a result, the boron activation energy for AISI 1026 steel was estimated as 178.4 kJ/mol. Furthermore, this kinetic model was validated by comparing the experimental Fe2B layer thickness with the predicted one at a temperature of 1253 K for 5 h of treatment. A contour diagram relating the layer thickness to the boriding parameters was proposed to be used in practical applications.

Amorphous nickel boride membrane on a platinum-nickel alloy surface for enhanced oxygen reduction reaction.

PubMed

He, Daping; Zhang, Libo; He, Dongsheng; Zhou, Gang; Lin, Yue; Deng, Zhaoxiang; Hong, Xun; Wu, Yuen; Chen, Chen; Li, Yadong

2016-08-09

The low activity of the oxygen reduction reaction in polymer electrolyte membrane fuel cells is a major barrier for electrocatalysis, and hence needs to be optimized. Tuning the surface electronic structure of platinum-based bimetallic alloys, a promising oxygen reduction reaction catalyst, plays a key role in controlling its interaction with reactants, and thus affects the efficiency. Here we report that a dealloying process can be utilized to experimentally fabricate the interface between dealloyed platinum-nickel alloy and amorphous nickel boride membrane. The coating membrane works as an electron acceptor to tune the surface electronic structure of the platinum-nickel catalyst, and this composite catalyst composed of crystalline platinum-nickel covered by amorphous nickel boride achieves a 27-times enhancement in mass activity relative to commercial platinum/carbon at 0.9 V for the oxygen reduction reaction performance. Moreover, this interactional effect between a crystalline surface and amorphous membrane can be readily generalized to facilitate the 3-times higher catalytic activity of commercial platinum/carbon.

Influence of heat treatment on microstructure and hot crack susceptibility of laser-drilled turbine blades made from Rene 80

DOE Office of Scientific and Technical Information (OSTI.GOV)

Osterle, W.; Krause, S.; Moelders, T.

2008-11-15

Turbine components from conventionally cast nickel-base alloy Rene 80 show different hot cracking susceptibilities depending on their heat treatment conditions leading to slightly different microstructures. Electron probe micro-analysis, focused ion beam technique and analytical transmission electron microscopy were applied to reveal and identify grain boundary precipitates and the {gamma}-{gamma}'-microstructure. The distribution of borides along grain boundaries was evaluated statistically by quantitative metallography. The following features could be correlated with an increase of cracking susceptibility: i) Increasing grain size, ii) increasing fraction of grain boundaries with densely spaced borides, iii) lack of secondary {gamma}'-particles in matrix channels between the coarse cuboidalmore » {gamma}'-precipitates. The latter feature seems to be responsible for linking-up of cracked grain boundary precipitates which occurred as an additional cracking mechanism after one heat treatment, whereas decohesion at the boride-matrix-interface in the heat affected zone of laser-drilled holes was observed for both heat treatments.« less

Microstructure and mechanical properties of Ni and Fe-base boride-dispersion-strengthened microcrystalline alloys

DOE Office of Scientific and Technical Information (OSTI.GOV)

Wade, C.S.; Park, H.G.; Hoagland, R.G.

This paper considers the relation between microstructure and mechanical properties of two Ni-base and two Fe-base Boride-Dispersion-Strengthened Microcrystalline (BDSM) alloys. In these very fine grained materials the borides were primarily Cr, Mo, and MoFe in a fcc matrix in three of the alloys, and a bcc in one of the Fe-base alloys. Strength data and resistance to stress corrosion cracking are reported and, in the latter case, extraordinary resistance to SCC in NaCl, Na{sub 2}S{sub 2}O{sub 3} and boiling MgCl{sub 2} environments was observed in every case. The fcc BDSM alloys also demonstrated excellent thermal stability in terms of strengthmore » and fracture roughness up to 1000 C. The bcc alloy suffered severe loss of toughness. The fracture mode involved ductile rupture in all alloys and they display a reasonably linear correlation between K{sub Ic} and the square root of particle spacing.« less

Magnetic properties and magnetic hardening mechansim of Pt-Co-B alloys

NASA Technical Reports Server (NTRS)

Qiu, Ning; Flanagan, F.; Wittig, James E.

1994-01-01

The intrinsic coercivity is found to be maximized in the Pt42Co45B13 ternary alloy which is undercooled and rapidly solidified (quenched using a 70 m/s wheel speed after undercooling), and then annealed (800 C for 2400 min). The same alloy, processed at slower cooling rates and annealed in the same way, has a much larger scale microstructure and a much lower resulting magnetic coercivity. The microstructure which would optimize the coercitvity of this coercivity of this ternary alloy is a completely ordered L1(sub zero) Pt-Co matrix with a submicron magnetic single-domion Co-boride precipitate. The L1(sub zero) phase is highly anistropic magnetically while the Co-boride precipate is somewhat less so. Annealing treatments designed to produced single-domain Co-boride precipitates enhance the coercivity. This suggests that the refined microstructures is responsible for the high coercivities found in the rapidly solidified and annealed alloy. The magnetic domain wall thickness for a Co-boride precipitate is determined from both experimental observation and theoretical calculation in order to evaluate its influence on the coercivity of the alloy. The effects of the pinning of domain walls and the barrier to the nucleation of reverse domains on the coercivity are discussed. Both microstrucutral analysis and theoretical calculation indicate that the high coercivities in the Pt42Co45B13 alloy are due to the difficult nucleation of reverse magnetic domains.

Electroplating of the superconductive boride MgB2 from molten salts

NASA Astrophysics Data System (ADS)

Abe, Hideki; Yoshii, Kenji; Nishida, Kenji; Imai, Motoharu; Kitazawa, Hideaki

2005-02-01

An electroplating technique of the superconductive boride MgB2 onto graphite substrates is reported. Films of MgB2 with a thickness of tens micrometer were fabricated on the planar and curved surfaces of graphite substrates by means of electrolysis on a mixture of magnesium chloride, potassium chloride, sodium chloride, and magnesium borate fused at 600 °C under an Ar atmosphere. The electrical resistivity and magnetization measurements revealed that the electroplated MgB2 films undergo a superconducting transition with the critical temperature (Tc) of 36 K.

History of ``NANO''-Scale VERY EARLY Solid-State (and Liquid-State) Physics/Chemistry/Metallurgy/ Ceramics; Interstitial-Alloys Carbides/Nitrides/Borides/...Powders and Cermets, Rock Shocks, ...

NASA Astrophysics Data System (ADS)

Maiden, Colin; Siegel, Edward

History of ``NANO'': Siegel-Matsubara-Vest-Gregson[Mtls. Sci. and Eng. 8, 6, 323(`71); Physica Status Solidi (a)11,45(`72)] VERY EARLY carbides/nitrides/borides powders/cermets solid-state physics/chemistry/metallurgy/ ceramics FIRST-EVER EXPERIMENTAL NANO-physics/chemistry[1968 ->Physica Status Solidi (a)11,45(`72); and EARLY NANO-``physics''/NANO-``chemistry'' THEORY(after: Kubo(`62)-Matsubara(`60s-`70s)-Fulde (`65) [ref.: Sugano[Microcluster-Physics, Springer('82 `98)

Synthesis and Characterization of Low-Cost Superhard Transition-Metal Borides

NASA Astrophysics Data System (ADS)

Kaner, Richard

2013-06-01

The increasing demand for high-performance cutting and forming tools, along with the shortcomings of traditional tool materials such as diamond (unable to cut ferrous materials), cubic boron nitride (expensive) and tungsten carbide (relatively-low hardness), has motivated the search for new superhard materials for these applications. This has led us to a new class of superhard materials, dense refractory transition-metal borides, which promise to address some of the existing problems of conventional superhard materials. For example, we have synthesized rhenium diboride (ReB2) using arc melting at ambient pressure. This superhard material has demonstrated an excellent electrical conductivity and superior mechanical properties, including a Vickers hardness of 48.0 GPa (under an applied load of 0.49 N). To further increase the hardness and lower the materials costs, we have begun exploring high boron content metal borides including tungsten tetraboride (WB4) . We have synthesized WB4 by arc melting and studied its hardness and high-pressure behavior. With a similar Vickers hardness (43.3 GPa under a load of 0.49 N) and bulk modulus (326-339 GPa) to ReB2, WB4 offers a lower cost alternative and has the potential to be used in cutting tools. To further enhance the hardness of this superhard metal, we have created the binary and ternary solid solutions of WB4 with Cr, Mn and Ta, the results of which show a hardness increase of up to 20 percent. As with other metals, these metallic borides can be readily cut and shaped using electric discharge machining (EDM).

Microstructure of Vacuum-Brazed Joints of Super-Ni/NiCr Laminated Composite Using Nickel-Based Amorphous Filler Metal

NASA Astrophysics Data System (ADS)

Ma, Qunshuang; Li, Yajiang; Wu, Na; Wang, Juan

2013-06-01

Vacuum brazing of super-Ni/NiCr laminated composite and Cr18-Ni8 stainless steel was carried out using Ni-Cr-Si-B amorphous filler metal at 1060, 1080, and 1100 °C, respectively. Microstructure and phase constitution were investigated by means of optical and scanning electron microscopy, energy-dispersive spectroscopy, x-ray diffraction, and micro-hardness tester. When brazed at 1060-1080 °C, the brazed region can be divided into two distinct zones: isothermally solidified zone (ISZ) consisting of γ-Ni solid solution and athermally solidified zone (ASZ) consisting of Cr-rich borides. Micro-hardness of the Cr-rich borides formed in the ASZ was as high as 809 HV50 g. ASZ decreased with increase of the brazing temperature. Isothermal solidification occurred sufficiently at 1100 °C and an excellent joint composed of γ-Ni solid solution formed. The segregation of boron from ISZ to residual liquid phase is the reason of Cr-rich borides formed in ASZ. The formation of secondary precipitates in diffusion-affected zone is mainly controlled by diffusion of B.

Microstructure and High Temperature Mechanical Property of Fe-Cr-B Based Metal/Ceramic Composite Manufactured by Metal Injection Molding Process

NASA Astrophysics Data System (ADS)

Lee, Kee-Ahn; Gwon, Jin-Han; Yoon, Tae-Sik

2018-03-01

This study investigated the microstructure and the room and high temperature mechanical properties of Fe-Cr-B alloy manufactured by metal injection molding. In addition, hot isostatic pressing was performed to increase the density of the material, and a comparison of properties was made. Microstructural observation confirmed a bi-continuous structure composed of a three-dimensional network of α-Fe phase and (Cr,Fe)2B phase. The HIPed specimen featured a well-formed adhesion between the α-Fe phase and boride, and the number of fine pores was significantly reduced. The tensile results confirmed that the HIPed specimen (RT to 900 °C) had higher strengths compared to the as-sintered specimen, and the change of elongation starting from 700 °C was significantly greater in the HIPed specimen. Fractography suggested that cracks propagated mostly along the interface between the α-Fe matrix and boride in the as-sintered specimen, while direct fracture of boride was observed in addition to interface separation in the HIPed specimen.

Electrically conductive containment vessel for molten aluminum

DOEpatents

Holcombe, C.E.; Scott, D.G.

1984-06-25

The present invention is directed to a containment vessel which is particularly useful in melting aluminum. The vessel of the present invention is a multilayered vessel characterized by being electrically conductive, essentially nonwettable by and nonreactive with molten aluminum. The vessel is formed by coating a tantalum substrate of a suitable configuration with a mixture of yttria and particulate metal 10 borides. The yttria in the coating inhibits the wetting of the coating while the boride particulate material provides the electrical conductivity through the vessel. The vessel of the present invention is particularly suitable for use in melting aluminum by ion bombardment.

Electrically conductive containment vessel for molten aluminum

DOEpatents

Holcombe, Cressie E.; Scott, Donald G.

1985-01-01

The present invention is directed to a containment vessel which is particularly useful in melting aluminum. The vessel of the present invention is a multilayered vessel characterized by being electrically conductive, essentially nonwettable by and nonreactive with molten aluminum. The vessel is formed by coating a tantalum substrate of a suitable configuration with a mixture of yttria and particulate metal borides. The yttria in the coating inhibits the wetting of the coating while the boride particulate material provides the electrical conductivity through the vessel. The vessel of the present invention is particularly suitable for use in melting aluminum by ion bombardment.

Brazing Inconel 625 Using Two Ni/(Fe)-Based Amorphous Filler Foils

NASA Astrophysics Data System (ADS)

Chen, Wen-Shiang; Shiue, Ren-Kae

2012-07-01

For MBF-51 filler, the brazed joint consists of interfacial grain boundary borides, coarse Nb6Ni16Si7, and Ni/Cr-rich matrix. In contrast, the VZ-2106 brazed joint is composed of interfacial Nb6Ni16Si7 precipitates as well as grain boundary borides, coarse Nb6Ni16Si7, and Ni/Cr/Fe-rich matrix. The maximum tensile strength of 443 MPa is obtained from the MBF-51 brazed specimen. The tensile strengths of VZ-2106 brazed joints are approximately 300 MPa. Both amorphous filler foils demonstrate potential in brazing IN-625 substrate.

Characterization of WB/SiC Schottky Barrier Diodes Using I-V-T Method

NASA Astrophysics Data System (ADS)

Aldridge, James; Oder, Tom

2009-04-01

The importance of silicon carbide (SiC) semiconductor for high temperature and high power microelectronic device applications has long been established. We have fabricated SiC Schottky barrier diodes using tungsten boride (WB) as the Schottky contact. The diodes were characterized using the current-voltage-temperature method. The sample was mounted on a heated stage and the temperature varied from about 25 ^oC to 300 ^oC at intervals of 25 ^oC. From the Richardson's plot, we obtained an energy barrier height of 0.96 eV and a Richardson's constant of 71.2 AK-1cm-2. Using the modified Richardson's plot, we obtained a barrier height of 1.01 eV. From the variation of the ideality factor and the temperature, we determined a characteristic energy of 0.02 eV to 0.04 eV across the range of the measurement temperature. This implies that thermionic emission is dominant in the low measurement temperature range. Our results confirm the excellent thermal stability of WB/SiC Schottky barrier diodes.

Synthesis, Structure, and Properties of Refractory Hard-Metal Borides

NASA Astrophysics Data System (ADS)

Lech, Andrew Thomas

As the limits of what can be achieved with conventional hard compounds, such as tungsten carbide, are nearing reach, super-hard materials are an area of increasing industrial interest. The refractory hard metal borides, such as ReB2 and WB4, offer an increasingly attractive alternative to diamond and cubic boron nitride as a next-generation tool material. In this Thesis, a thorough discussion is made of the progress achieved by our laboratory towards understanding the synthesis, structure, and properties of these extremely hard compounds. Particular emphasis is placed on structural manipulation, solid solution formation, and the unique crystallographic manifestations of what might also be called "super-hard metals".

Structural, electronic and thermal properties of super hard ternary boride, WAlB

NASA Astrophysics Data System (ADS)

Rajpoot, Priyanka; Rastogi, Anugya; Verma, U. P.

2018-04-01

A first principle study of the structural, electronic and thermal properties of Tungsten Aluminum Boride (WAlB) using full-potential linearized augmented plane wave (FP-LAPW) in the frame work of density function theory (DFT) have been calculated. The calculated equilibrium structural parameters are in excellent agreement with available experimental results. The calculated electronic band structure reveals that WAlB is metallic in nature. The quasi-harmonic Debye model is applied to study of the temperature and pressure effect on volume, Debye temperature, thermal expansion coefficient and specific heat at constant volume and constant pressure. To the best of our knowledge theoretical investigation of these properties of WAlB is reported for the first time.

Infiltration processing of boron carbide-, boron-, and boride-reactive metal cermets

DOEpatents

Halverson, Danny C.; Landingham, Richard L.

1988-01-01

A chemical pretreatment method is used to produce boron carbide-, boron-, and boride-reactive metal composites by an infiltration process. The boron carbide or other starting constituents, in powder form, are immersed in various alcohols, or other chemical agents, to change the surface chemistry of the starting constituents. The chemically treated starting constituents are consolidated into a porous ceramic precursor which is then infiltrated by molten aluminum or other metal by heating to wetting conditions. Chemical treatment of the starting constituents allows infiltration to full density. The infiltrated precursor is further heat treated to produce a tailorable microstructure. The process at low cost produces composites with improved characteristics, including increased toughness, strength.

Realistic micromechanical modeling and simulation of two-phase heterogeneous materials

NASA Astrophysics Data System (ADS)

Sreeranganathan, Arun

This dissertation research focuses on micromechanical modeling and simulations of two-phase heterogeneous materials exhibiting anisotropic and non-uniform microstructures with long-range spatial correlations. Completed work involves development of methodologies for realistic micromechanical analyses of materials using a combination of stereological techniques, two- and three-dimensional digital image processing, and finite element based modeling tools. The methodologies are developed via its applications to two technologically important material systems, namely, discontinuously reinforced aluminum composites containing silicon carbide particles as reinforcement, and boron modified titanium alloys containing in situ formed titanium boride whiskers. Microstructural attributes such as the shape, size, volume fraction, and spatial distribution of the reinforcement phase in these materials were incorporated in the models without any simplifying assumptions. Instrumented indentation was used to determine the constitutive properties of individual microstructural phases. Micromechanical analyses were performed using realistic 2D and 3D models and the results were compared with experimental data. Results indicated that 2D models fail to capture the deformation behavior of these materials and 3D analyses are required for realistic simulations. The effect of clustering of silicon carbide particles and associated porosity on the mechanical response of discontinuously reinforced aluminum composites was investigated using 3D models. Parametric studies were carried out using computer simulated microstructures incorporating realistic microstructural attributes. The intrinsic merit of this research is the development and integration of the required enabling techniques and methodologies for representation, modeling, and simulations of complex geometry of microstructures in two- and three-dimensional space facilitating better understanding of the effects of microstructural geometry on the mechanical behavior of materials.

The Quantitative Significance of Nondestructive Evaluation of Graphite and Ceramic Materials.

DTIC Science & Technology

NONDESTRUCTIVE TESTING), (* GRAPHITE , (*BORIDES, NONDESTRUCTIVE TESTING), (*REFRACTORY MATERIALS, NONDESTRUCTIVE TESTING), DEFECTS(MATERIALS), TENSILE PROPERTIES, RADIOGRAPHY, ULTRASONIC PROPERTIES, DENSITY.

High-Temperature Syntheses of New, Thermally-Stable Chemical Compounds.

DTIC Science & Technology

SYNTHESIS(CHEMISTRY), HEAT RESISTANT PLASTICS, NITRILES, FLUORINE COMPOUNDS, COMPLEX COMPOUNDS, NITROGEN, SULFIDES, ORGANOMETALLIC COMPOUNDS, ORGANOBORANES, BORIDES, SPINEL, CARBIDES, NITRIDES, SILICIDES .

B Layers and Adhesion on Armco Iron Substrate

NASA Astrophysics Data System (ADS)

Elias-Espinosa, M.; Ortiz-Domínguez, M.; Keddam, M.; Flores-Rentería, M. A.; Damián-Mejía, O.; Zuno-Silva, J.; Hernández-Ávila, J.; Cardoso-Legorreta, E.; Arenas-Flores, A.

2014-08-01

In this work, a kinetic model was suggested to evaluate the boron diffusion coefficient in the Fe2B layers grown on the Armco iron substrate by the powder-pack boriding. This thermochemical treatment was carried out in the temperature range of 1123-1273 K for treatment times ranging from 2 to 8 h. The boron diffusion coefficient in the Fe2B layers was estimated by solving the mass balance equation at the (Fe2B/substrate) interface with an inclusion of boride incubation time. To validate the present model, the simulated value of Fe2B layer thickness was compared with the experimental value obtained at 1253 K for a treatment time of 5 h. The morphology of Fe2B layers was observed by SEM and optical microscopy. Metallographic studies showed that the boride layer has a saw-tooth morphology in all the samples. The layer thickness measurements were done with the help of MSQ PLUS software. The Fe2B phase was identified by x-ray diffraction method. Finally, the adherence of Fe2B layers on the Armco iron substrate was qualitatively evaluated by using the Daimler-Benz Rockwell-C indentation technique. In addition, the estimated value of boron activation energy was compared to the literature data.

A Simple, General Synthetic Route toward Nanoscale Transition Metal Borides.

PubMed

Jothi, Palani R; Yubuta, Kunio; Fokwa, Boniface P T

2018-04-01

Most nanomaterials, such as transition metal carbides, phosphides, nitrides, chalcogenides, etc., have been extensively studied for their various properties in recent years. The similarly attractive transition metal borides, on the contrary, have seen little interest from the materials science community, mainly because nanomaterials are notoriously difficult to synthesize. Herein, a simple, general synthetic method toward crystalline transition metal boride nanomaterials is proposed. This new method takes advantage of the redox chemistry of Sn/SnCl 2 , the volatility and recrystallization of SnCl 2 at the synthesis conditions, as well as the immiscibility of tin with boron, to produce crystalline phases of 3d, 4d, and 5d transition metal nanoborides with different morphologies (nanorods, nanosheets, nanoprisms, nanoplates, nanoparticles, etc.). Importantly, this method allows flexibility in the choice of the transition metal, as well as the ability to target several compositions within the same binary phase diagram (e.g., Mo 2 B, α-MoB, MoB 2 , Mo 2 B 4 ). The simplicity and wide applicability of the method should enable the fulfillment of the great potential of this understudied class of materials, which show a variety of excellent chemical, electrochemical, and physical properties at the microscale. © 2018 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Corrosion and wear behaviors of boronized AISI 316L stainless steel

NASA Astrophysics Data System (ADS)

Kayali, Yusuf; Büyüksaǧiş, Aysel; Yalçin, Yılmaz

2013-09-01

In this study, the effects of a boronizing treatment on the corrosion and wear behaviors of AISI 316L austenitic stainless steel (AISI 316L) were examined. The corrosion behavior of the boronized samples was studied via electrochemical methods in a simulation body fluid (SBF) and the wear behavior was examined using the ball-on-disk wear method. It was observed that the boride layer that formed on the AISI 316L surface had a flat and smooth morphology. Furthermore, X-ray diffraction analyses show that the boride layer contained FeB, Fe2B, CrB, Cr2B, NiB, and Ni2B phases. Boride layer thickness increased with an increasing boronizing temperature and time. The boronizing treatment also increased the surface hardness of the AISI 316L. Although there was no positive effect of the coating on the corrosion resistance in the SBF medium. Furthermore, a decrease in the friction coefficient was recorded for the boronized AISI 316L. As the boronizing temperature increased, the wear rate decreased in both dry and wet mediums. As a result, the boronizing treatment contributed positively to the wear resistance by increasing the surface hardness and by decreasing the friction coefficient of the AISI 316L.

Design of cemented tungsten carbide and boride-containing shields for a fusion power plant

NASA Astrophysics Data System (ADS)

Windsor, C. G.; Marshall, J. M.; Morgan, J. G.; Fair, J.; Smith, G. D. W.; Rajczyk-Wryk, A.; Tarragó, J. M.

2018-07-01

Results are reported on cemented tungsten carbide (cWC) and boride-containing composite materials for the task of shielding the centre column of a superconducting tokamak power plant. The shield is based on five concentric annular shells consisting of cWC and water layers of which the innermost cWC shield can be replaced with boride composites. Sample materials have been fabricated changing the parameters of porosity P, binder alloy fraction f binder and boron weight fraction f boron. For the fabricated materials, and other hypothetical samples with chosen parameters, Monte Carlo studies are made of: (i) the power deposition into the superconducting core, (ii) the fast neutron and gamma fluxes and (iii) the attenuation coefficients through the shield for the deposited power and neutron and gamma fluxes. It is shown that conventional Co-based cWC binder alloy can be replaced with a Fe–Cr alloy (92 wt.% Fe, 8 wt.% Cr), which has lower activation than cobalt with minor changes in shield performance. Boride-based composite materials have been prepared and shown to give a significant reduction in power deposition and flux, when placed close to the superconducting core. A typical shield of cemented tungsten carbide with 10 wt.% of Fe–8Cr binder and 0.1% porosity has a power reduction half-length of 0.06 m. It is shown that the power deposition increases by 4.3% for every 1% additional porosity, and 1.7% for every 1 wt.% additional binder. Power deposition decreased by 26% for an initial 1 wt.% boron addition, but further increases in f boron showed only a marginal decrease. The dependences of power deposited in the core, the maximum neutron and gamma fluxes on the core surface, and the half attenuation distances through the shield have been fitted to within a fractional percentage error by analytic functions of the porosity, metallic binder alloy and boron weight fractions.

Etude des mecanismes de formation des microstructures lors du brasage isotherme de superalliages a base de nickel

NASA Astrophysics Data System (ADS)

Ruiz-Vargas, Jose

This thesis reports theoretical and experimental investigations carried out to understand the mechanisms of microstructure formation during isothermal brazing, produced by brazing Inconel 625 and MC2 nickel-based superalloys with filler metal BNi-2. Firstly, studies were made on pure Ni to interpret microstructure's formation with simplified alloy chemistry. Microstructure formation have been studied when varying time at constant temperature (isothermal kinetics), but also when varying temperature for constant hold time (isochronal kinetics). The chemical composition and crystallography of the present phases have been identified, with the following results : (i) the fraction of dissolved base metal has been found proportional to the initial thickness of the brazing alloy, so that the composition of the liquid remains homogeneous with a precise initial equilibrium composition during the whole brazing process, (ii) the melting of the joint occurs in two steps : at lower temperature, it involves only partially melting, and boron diffusion in pure Ni leads to the precipitation of fine Ni3B borides at the interface ; in a second stage, at higher temperature, melting is complete and thermodynamic equilibrium requires significant dissolution of nickel, which also involves the dissolution of part of borides already formed. Secondly, nickel plating technique was used on Inconel 625 nickel-based superalloy. A thin layer of Ni with varying thickness, has been electrodeposited to observe the gradual dissolution of Inconel and microstructural features formation due to the presence of superalloy alloying elements. It has been observed that the nickel coating does not prevent precipitation in the base metal as boron diffuse rapidly through the coating width. In the intermediate nickel plating width, fragile precipitates of nickel borides have been observed, because the contribution of Inconel alloying elements to the melt was very limited. In absence of nickel plating on the superalloy, the formation of Nb and Cr-Mo borides phase has been observed. Efforts have been made to evaluate the accuracy of Boron measurement by energy dispersion X-ray spectroscopy (EDS) in the MC2 superalloy and BNi-2 filler metal. The most accurate method to quantify Boron using EDS is by composition difference. A precision of 5 at.% has been reached when using optimized data acquisition and post processing schemes. Ultimately, Electron Backscatter Diffraction (EBSD) combined with localized EDS analysis has been proven invaluable in conclusively identifying micrometer sized boride precipitates ; thus further improving the characterization of brazed Ni-based superalloys.

Plasma enhanced chemical vapor deposition of metalboride interfacial layers as diffusion barriers for nanostructured diamond growth on cobalt containing alloys CoCrMo and WC-Co

NASA Astrophysics Data System (ADS)

Johnston, Jamin M.

This work is a compilation of theory, finite element modeling and experimental research related to the use of microwave plasma enhanced chemical vapor deposition (MPECVD) of diborane to create metal-boride surface coatings on CoCrMo and WC-Co, including the subsequent growth of nanostructured diamond (NSD). Motivation for this research stems from the need for wear resistant coatings on industrial materials, which require improved wear resistance and product lifetime to remain competitive and satisfy growing demand. Nanostructured diamond coatings are a promising solution to material wear but cannot be directly applied to cobalt containing substrates due to graphite nucleation. Unfortunately, conventional pre-treatment methods, such as acid etching, render the substrate too brittle. Thus, the use of boron in a MPECVD process is explored to create robust interlayers which inhibit carbon-cobalt interaction. Furthermore, modeling of the MPECVD process, through the COMSOL MultiphysicsRTM platform, is performed to provide insight into plasma-surface interactions using the simulation of a real-world apparatus. Experimental investigation of MPECVD boriding and NSD deposition was conducted at surface temperatures from 700 to 1100 °C. Several well-adhered metal-boride surface layers were formed: consisting of CoB, CrB, WCoB, CoB and/or W2CoB2. Many of the interlayers were shown to be effective diffusion barriers against elemental cobalt for improving nucleation and adhesion of NSD coatings; diamond on W2CoB2 was well adhered. However, predominantly WCoB and CoB phase interlayers suffered from diamond film delamination. Metal-boride and NSD surfaces were evaluated using glancing-angle x-ray diffraction (XRD), x-ray photoelectron spectroscopy (XPS), cross-sectional scanning electron microscopy (SEM), energy dispersive x-ray spectroscopy (EDS), micro-Raman spectroscopy, nanoindentation, scratch testing and epoxy pull testing. COMSOL MultiphysicsRTM was used to construct a representation of the MPECVD chamber. Relevant material properties, boundary conditions and adjustable parameters were applied to match the actual experimental set-up. Despite approximations, simulations for the surface temperature and surface accumulation matched well with experimental data. The combination of data from CoCrMo, WC-Co and modeling of the MPECVD process confirms that the use of boron to create metal-boride interlayers is applicable for subsequent nanostructured diamond coatings and that the surface temperature and deposition thickness can be predicted using finite element modeling.

Deposition and characterization of aluminum magnesium boride thin film coatings

NASA Astrophysics Data System (ADS)

Tian, Yun

Boron-rich borides are a special group of materials possessing complex structures typically comprised of B12 icosahedra. All of the boron-rich borides sharing this common structural unit exhibit a variety of exceptional physical and electrical properties. In this work, a new ternary boride compound AlMgB14, which has been extensively studied in bulk form due to its novel mechanical properties, was fabricated into thin film coatings by pulsed laser deposition (PLD) technology. The effect of processing conditions (laser operating modes, vacuum level, substrate temperature, and postannealing, etc.) on the composition, microstructure evolution, chemical bonding, and surface morphology of AlMgB14 thin film coatings has been investigated by X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS), transmission electron microscopy (TEM), atomic force microscopy (AFM) and Fourier transform infrared (FTIR) spectrometry; the mechanical, electrical, and optical properties of AlMgB14 thin films have been characterized by nanoindentation, four-point probe, van der Pauw Hall measurement, activation energy measurement, and UV-VIS-NIR spectrophotometer. Experimental results show that AlMgB14 films deposited in the temperature range of 300 K - 873 K are amorphous. Depositions under a low vacuum level (5 x 10-5 Torr) can introduce a significant amount of C and O impurities into AlMgB14 films and lead to a complex oxide glass structure. Orthorhombic AlMgB14 phase cannot be obtained by subsequent high temperature annealing. By contrast, the orthorhombic AlMgB 14 crystal structure can be attained via high temperature-annealing of AlMgB14 films deposited under a high vacuum level (< 3 x 10-6 Torr), accompanied by strong texture formation. Low vacuum level-as deposited AlMgB14 films have low hardness (10 GPa), but high vacuum level-as deposited AlMgB14 films exhibit an extremely high hardness (45 GPa - 51 GPa), and the higher deposition temperature results in still higher hardness. Furthermore, a very low friction coefficient (0.04 - 0.05) has been observed for high vacuum level-as deposited AlMgB14 films, which could be ascribed to the in situ formation of a surface self-lubricating layer. Unlike most boron-rich boride films, high vacuum level-as deposited AlMgB14 films also possess a low n-type electrical resistivity, which is a consequence of high carrier concentration and moderate carrier mobility. The operative electrical transport mechanism and doping behavior for high vacuum level-as deposited AlMgB14 films are discussed in detail in this thesis.

Direct synthesis of magnesium borohydride

DOEpatents

Ronnebro, Ewa Carin Ellinor [Kennewick, WA; Severa, Godwin [Honolulu, HI; Jensen, Craig M [Kailua, HI

2012-04-03

A method is disclosed for directly preparing an alkaline earth metal borohydride, i.e. Mg(BH.sub.4).sub.2, from the alkaline earth metal boride MgB.sub.2 by hydrogenating the MgB.sub.2 at an elevated temperature and pressure. The boride may also be doped with small amounts of a metal chloride catalyst such as TiCl.sub.3 and/or NiCl.sub.2. The process provides for charging MgB.sub.2 with high pressure hydrogen above at least 70 MPa while simultaneously heating the material to about 350.degree. C. to about 400.degree. C. The method is relatively simple and inexpensive and provides a reversible hydride compound having a hydrogen capacity of at least 11 wt %.

The low-lying quartet electronic states of group 14 diatomic borides XB (X = C, Si, Ge, Sn, Pb)

NASA Astrophysics Data System (ADS)

Pontes, Marcelo A. P.; de Oliveira, Marcos H.; Fernandes, Gabriel F. S.; Da Motta Neto, Joaquim D.; Ferrão, Luiz F. A.; Machado, Francisco B. C.

2018-04-01

The present work focuses in the characterization of the low-lying quartet electronic and spin-orbit states of diatomic borides XB, in which X is an element of group 14 (C, Si, Ge, Sn, PB). The wavefunction was obtained at the CASSCF/MRCI level with a quintuple-ζ quality basis set. Scalar relativistic effects were also taken into account. A systematic and comparative analysis of the spectroscopic properties for the title molecular series was carried out, showing that the (1)4Π→X4Σ- transition band is expected to be measurable by emission spectroscopy to the GeB, SnB and PbB molecules, as already observed for the lighter CB and SiB species.

Microstructural characterization of Ni-based self-fluxing alloy after selective surface-engineering using diode laser

NASA Astrophysics Data System (ADS)

Chun, Eun-Joon; Park, Changkyoo; Nishikawa, Hiroshi; Kim, Min-Su

2018-06-01

The microstructural characterization of thermal-sprayed Ni-based self-fluxing alloy (Metco-16C®) after laser-assisted homogenization treatment was performed. To this end, a high-power diode laser system was used. This supported the real-time control of the target homogenization temperature at the substrate surface. Non-homogeneities of the macrosegregation of certain elements (C and Cu) and the local concentration of Cr-based carbides and borides in certain regions in the as-sprayed state could be enhanced with the application of homogenization. After homogenization at 1423 K, the hardness of the thermal-sprayed layer was found to have increased by 1280 HV from the as-sprayed state (750 HV). At this homogenization temperature, the microstructure of the thermal-sprayed layer consisted of a lamellar structuring of the matrix phase (austenite and Ni3Si) with fine (<5 μm) carbides and borides (the rod-like phase of Cr5B3, the lumpy phase of M23C6, and the extra-fine phase of M7C3). Despite the formation of several kinds of carbides and borides during homogenization at 1473 K, the lowest hardness level was found to be less than that of the as-sprayed state, because of the liquid-state homogenization treatment without formation of lamellar structuring between austenite and Ni3Si.

Nanoceramic -Metal Matrix Composites by In-Situ Pyrolysis of Organic Precursors in a Liquid Melt

NASA Astrophysics Data System (ADS)

Sudarshan; Surappa, M. K.; Ahn, Dongjoon; Raj, Rishi

2008-12-01

We show the feasibility of introducing a dispersion of a refractory ceramic phase into metals by stirring a powder of an organic polymer into a magnesium melt and having it convert into a ceramic within the melt by in-situ pyrolysis of the polymer. The pyrolysis is a highly reactive process, accompanied by the evolution of hydrogen, which disperses the ceramic phase into nanoscale constituents. In the present experiments, a polysilazane-based precursor, which is known to yield an amorphous ceramic constituted from silicon, carbon, and nitrogen, was used. Five weight percent of the precursor (which has a nominal ceramic yield of 75 to 85 wt pct) produced a twofold increase in the room-temperature yield strength and reduced the steady-state strain rate at 450 °C by one to two orders of magnitude, relative to pure magnesium. This polymer-based in-situ process (PIP) for processing metal-matrix composites (MMCs) is likely to have great generality, because many different kinds of organic precursors, for producing oxide, carbides, nitrides, and borides, are commercially available. Also, the process would permit the addition of large volume fractions of the ceramic, enabling the nanostructural design, and production of MMCs with a wide range of mechanical properties, meant especially for high-temperature applications. An important and noteworthy feature of the present process, which distinguishes it from other methods, is that all the constituents of the ceramic phase are built into the organic molecules of the precursor ( e.g., polysilazanes contain silicon, carbon, and nitrogen); therefore, a reaction between the polymer and the host metal is not required to produce the dispersion of the refractory phase.

NASA research on refractory compounds.

NASA Technical Reports Server (NTRS)

Gangler, J. J.

1971-01-01

The behavior and properties of the refractory carbides, nitrides, and borides are being investigated by NASA as part of its research aimed at developing superior heat resistant materials for aerospace applications. Studies of the zirconium-carbon-oxygen system show that zirconium oxycarbides of different compositions and lattice parameters can be formed between 1500 C and 1900 C and are stable below 1500 C. More applied studies show that hot working generally improves the microstructure and therefore the strength of TiC and NbC. Sintering studies on UN indicate that very high densities can be achieved. Hot pressing of cermets of HfN and HfC produces good mechanical properties for high temperature bearing applications. Attempts to improve the impact resistance of boride composites by the addition of a nickel or carbon yarn were not overly successful.

Low-cost industrially available molybdenum boride and carbide as "platinum-like" catalysts for the hydrogen evolution reaction in biphasic liquid systems.

PubMed

Scanlon, Micheál D; Bian, Xiaojun; Vrubel, Heron; Amstutz, Véronique; Schenk, Kurt; Hu, Xile; Liu, BaoHong; Girault, Hubert H

2013-02-28

Rarely reported low-cost molybdenum boride and carbide microparticles, both of which are available in abundant quantities due to their widespread use in industry, adsorb at aqueous acid-1,2-dichloroethane interfaces and efficiently catalyse the hydrogen evolution reaction in the presence of the organic electron donor - decamethylferrocene. Kinetic studies monitoring biphasic reactions by UV/vis spectroscopy, and further evidence provided by gas chromatography, highlight (a) their superior rates of catalysis relative to other industrially significant transition metal carbides and silicides, as well as a main group refractory compound, and (b) their highly comparable rates of catalysis to Pt microparticles of similar dimensions. Insight into the catalytic processes occurring for each adsorbed microparticle was obtained by voltammetry at the liquid-liquid interface.

Ternary ceramic thermal spraying powder and method of manufacturing thermal sprayed coating using said powder

DOE Office of Scientific and Technical Information (OSTI.GOV)

Vogli, Evelina; Sherman, Andrew J.; Glasgow, Curtis P.

The invention describes a method for producing ternary and binary ceramic powders and their thermal spraying capable of manufacturing thermal sprayed coatings with superior properties. Powder contain at least 30% by weight ternary ceramic, at least 20% by weight binary molybdenum borides, at least one of the binary borides of Cr, Fe, Ni, W and Co and a maximum of 10% by weight of nano and submicro-sized boron nitride. The primary crystal phase of the manufactured thermal sprayed coatings from these powders is a ternary ceramic, while the secondary phases are binary ceramics. The coatings have extremely high resistance againstmore » corrosion of molten metal, extremely thermal shock resistance and superior tribological properties at low and at high temperatures.« less

Design of Wear-Resistant Austenitic Steels for Selective Laser Melting

NASA Astrophysics Data System (ADS)

Lemke, J. N.; Casati, R.; Lecis, N.; Andrianopoli, C.; Varone, A.; Montanari, R.; Vedani, M.

2018-03-01

Type 316L stainless steel feedstock powder was modified by alloying with powders containing carbide/boride-forming elements to create improved wear-resistant austenitic alloys that can be readily processed by Selective Laser Melting. Fe-based alloys with high C, B, V, and Nb contents were thus produced, resulting in a microstructure that consisted of austenitic grains and a significant amount of hard carbides and borides. Heat treatments were performed to modify the carbide distribution and morphology. Optimal hard-phase spheroidization was achieved by annealing the proposed alloys at 1150 °C for 1 hour followed by water quenching. The total increase in hardness of samples containing 20 pct of C/B-rich alloy powder was of 82.7 pct while the wear resistance could be increased by a factor of 6.

Electronic Structure Properties and a Bonding Model of Thermoelectric Half-Heusler and Boride Phases

NASA Astrophysics Data System (ADS)

Simonson, Jack William

Half-Heusler alloys MNiSn and MCoSb (M = Ti, Zr, Hf) and layered boride intermetallics with structure types YCrB4 and Er 3CrB7 were designed, synthesized, and characterized. The thermoelectric properties of these two classes of alloys were measured from room temperature to 1100 K with the intent of indirectly studying their electronic structure properties and gauging not only their suitability but that of related alloys for high temperature thermoelectric power generation. In the case of the half-Heusler alloys, transition metals were substituted to both the M and Ni/Co sites to study the resultant modifications of the d-orbital-rich portion of the electronic structure near the Fermi energy. This modification and subsequent pinning of the Fermi energy within the gap is discussed herein in terms of first principles electronic structure calculations from the literature. In the half-Heusler alloys, it was found that substitution of transition metals invariably led to a decrease in the thermopower, while the resistivity typically maintained its semiconducting trend. On the other hand, Sn doping in MCoSb type alloys -- a dopant that has been known for some time to be efficient -- was shown to result in high ZT at temperatures in excess of 1000 K. Moreover, the band gaps of the transition metal-doped alloys measured in this work offer insight into the discrepancy between the predicted and measured band gaps in the undoped parent compositions. In the case of the layered boride alloys, on the other hand, few electronic calculations have been published, thus prompting the generalization of a well-known electron counting rule -- which is typically used to study molecular organometallics, boranes, and metallocenes -- to predict the trends in the densities of states of crystalline solids that possess the requisite deltahedral bonding geometry. In accordance with these generalized electronic counting rules, alloys of the form RMB4 (R = Y, Gd, Ho; M = Cr, Mo, W) were measured to be n-type semiconductors with band gaps ranging from 0.15 eV to 0.25 eV. These alloys exhibited thermoelectric power factors comparable with those of other potential boride thermoelectric materials reported in the literature. Furthermore, as a result of the procedure developed for precision synthesis of boron-rich intermetallics and the improved understanding of bonding trends, layered borides of several previously overlooked structure-types were synthesized and screened for superconductivity. Consequently, alloys of the MoB4 phase were discovered to be superconducting when doped with Nb or Ti. Electrical resistivity measurements of superconducting transitions between 6 and 8 K in these materials were confirmed via magnetic susceptibility measurements and x-ray diffraction. Structural measurements indicated opposite trends in lattice modification than those reported for the superconducting transition metal diborides.

NEUTRONIC REACTOR FUEL COMPOSITION

DOEpatents

Thurber, W.C.

1961-01-10

Uranium-aluminum alloys in which boron is homogeneously dispersed by adding it as a nickel boride are described. These compositions have particular utility as fuels for neutronic reactors, boron being present as a burnable poison.

Anomalous stress response of ultrahard WB n compounds

DOE PAGES

Li, Quan; Zhou, Dan; Zheng, Weitao; ...

2015-10-29

Boron-rich tungsten borides are premier prototypes of a new class of ultrahard compounds. Here, we show by first-principles calculations that their stress-strain relations display surprisingly diverse and anomalous behavior under a variety of loading conditions. Most remarkable is the dramatically changing bonding configurations and deformation modes with rising boron concentration in WB n (n=2, 3, 4), resulting in significantly different stress responses and unexpected indentation strength variations. This novel phenomenon stems from the peculiar structural arrangements in tungsten borides driven by boron’s ability to form unusually versatile bonding states. Our results elucidate the intriguing deformation mechanisms that define a distinctmore » type of ultrahard material. Here, these new insights underscore the need to explore unconventional structure-property relations in a broad range of transition-metal light-element compounds.« less

X-Ray photoelectron spectroscopy study of radiofrequency-sputtered titanium, carbide, molybdenum carbide, and titanium boride coatings and their friction properties

NASA Technical Reports Server (NTRS)

Brainard, W. A.; Wheeler, D. R.

1977-01-01

Radiofrequency sputtered coatings of titanium carbide, molybdenum carbide and titanium boride were tested as wear resistant coatings on stainless steel in a pin on disk apparatus. X-ray photoelectron spectroscopy (XPS) was used to analyze the sputtered films with regard to both bulk and interface composition in order to obtain maximum film performance. Significant improvements in friction behavior were obtained when properly biased films were deposited on deliberately preoxidized substrates. XPS depth profile data showed thick graded interfaces for bias deposited films even when adherence was poor. The addition of 10 percent hydrogen to the sputtering gas produced coatings with thin poorly adherent interfaces. Results suggest that some of the common practices in the field of sputtering may be detrimental to achieving maximum adherence and optimum composition for these refractory compounds.

Electronic, structural and magnetic studies of niobium borides of group 8 transition metals, Nb2MB2 (M=Fe, Ru, Os) from first principles calculations

NASA Astrophysics Data System (ADS)

Touzani, Rachid St.; Fokwa, Boniface P. T.

2014-03-01

The Nb2FeB2 phase (U3Si2-type, space group P4/mbm, no. 127) is known for almost 50 years, but until now its magnetic properties have not been investigated. While the synthesis of Nb2OsB2 (space group P4/mnc, no. 128, a twofold superstructure of U3Si2-type) with distorted Nb-layers and Os2-dumbbells was recently achieved, "Nb2RuB2" is still not synthesized and its crystal structure is yet to be revealed. Our first principles density functional theory (DFT) calculations have confirmed not only the experimental structures of Nb2FeB2 and Nb2OsB2, but also predict "Nb2RuB2" to crystalize with the Nb2OsB2 structure type. According to chemical bonding analysis, the homoatomic B-B interactions are optimized and very strong, but relatively strong heteroatomic M-B, B-Nb and M-Nb bonds (M=Fe, Ru, Os) are also found. These interactions, which together build a three-dimensional network, are mainly responsible for the structural stability of these ternary borides. The density-of-states at the Fermi level predicts metallic behavior, as expected, from metal-rich borides. Analysis of possible magnetic structures concluded preferred antiferromagnetic ordering for Nb2FeB2, originating from ferromagnetic interactions within iron chains and antiferromagnetic exchange interactions between them.

Specific features of thermal and magnetic properties of Yb B50 at low temperatures

NASA Astrophysics Data System (ADS)

Novikov, V. V.; Zhemoedov, N. A.; Matovnikov, A. V.; Mitroshenkov, N. V.; Popova, E. A.; Tolstosheev, A. K.; Malkin, B. Z.; Bud'ko, S. L.

2018-05-01

Heat capacity, thermal expansion, and magnetization of ytterbium boride Yb B50 were studied at temperatures 0.6-300 K, 5-300 K, and 2-300 K, respectively. We revealed two smooth peaks at about 4.0 and 60 K in the temperature dependence of the heat capacity. A comparison with the heat capacity of the diamagnetic isostructural boride Lu B50 shows that these anomalies can be attributed to excitations in the ytterbium sublattice (Schottky anomalies). A scheme for splitting of the ground F 7 /2 2 multiplet of Y b3 + ions in the crystal field is proposed. Reliability of the proposed crystal-field energies of the Y b3 + ions is confirmed by the analysis of temperature dependencies of magnetic susceptibility and magnetization in applied magnetic fields up to 55 kOe. A clear anisotropy of the thermal expansion and a negative expansion within a wide temperature range (40-185 K) were observed. Assuming that this anomaly of the thermal expansion in higher borides is caused by the specific thermal evolution of a crystal lattice observed earlier, in particular, in Lu B50 , and the interaction of rare-earth ions with lattice strains, we have determined phenomenological Grüneisen parameters which characterize effects due to thermal transitions of Y b3 + ions between the ground and excited states. A phase transition of Yb B50 to any magnetically ordered state was not observed down to the lowest temperatures of experiments.

Fusion welding of a modern borated stainless steel

DOE Office of Scientific and Technical Information (OSTI.GOV)

Robino, C.V.; Cieslak, M.J.

1997-01-01

Experiments designed to assess the fabrication and service weldability of 304B4A borated stainless steel were conducted. Welding procedures and parameters for manual gas tungsten arc (GTA) welding, autogenous electron beam (EB) welding and filler-added EB welding were developed and found to be similar to those for austenitic stainless steels. Following the procedure development, four test welds were produced and evaluated by microstructural analysis and Charpy impact testing. Further samples were used for determination of the postweld heat treatment (PWHT) response of the welds. The fusion zone structure of welds in this alloy consists of primary austenite dendrites with an interdendriticmore » eutectic-like austenite/boride constituent. Welds also show an appreciable partially molten zone that consists of the austenite/boride eutectic surrounding unmelted austenite islands. The microstructure of the EB welds was substantially finer than that of the GTA welds, and boride coarsening was not observed in the solid state heat-affected zone (HAZ) of either weld type. The impact toughness of as-welded samples was found to be relatively poor, averaging less than 10 J for both GTA and EB welds. For fusion zone notched GTA and EB samples and centerline notched EB samples, fracture generally occurred along the boundary between the partially molten and solid-state regions of the HAZ. The results of the PWHT study were very encouraging, with typical values of the impact energy for HAZ notched samples approaching 40 J, or twice the minimum code-acceptable value.« less

The physical and mechanical metallurgy of advanced O+BCC titanium alloys

NASA Astrophysics Data System (ADS)

Cowen, Christopher John

This thesis comprises a systematic study of the microstructural evolution, phase transformation behavior, elevated-temperature creep behavior, room-temperature and elevated-temperature tensile behavior, and room-temperature fatigue behavior of advanced titanium-aluminum-niobium (Ti-Al-Nb) alloys with and without boron additions. The specific alloys studied were: Ti-5A1-45Nb (at%), Ti-15Al-33Nb (at%), Ti-15Al-33Nb-0.5B (at%), Ti-15Al-33Nb-5B (at%), Ti-21Al-29Nb (at%), Ti-22Al-26Nb (at%), and Ti-22Al-26Nb-5B (at%). The only alloy composition that had been previously studied before this thesis work began was Ti-22Al-26Nb (at%). Publication in peer-reviewed material science journals of the work performed in this thesis has made data available in the scientific literature that was previously non-existent. The knowledge gap for Ti-Al-Nb phase equilibria over the compositional range of Ti-23Al-27Nb (at%) to Ti-12Al-38Nb (at%) that existed before this work began was successfully filled. The addition of 5 at% boron to the Ti-15Al-33Nb alloy produced 5-9 volume percent boride phase needles within the microstructure. The chemical composition of the boride phase measured by electron microprobe was determined to be approximately B 2TiNb. The lattice parameters of the boride phase were simulated through density functional theory calculations by collaborators at the Air Force Research Laboratory based on the measured composition. Using the simulated lattice parameters, electron backscatter diffraction kikuchi patterns and selected area electron diffraction patterns obtained from the boride phase were successfully indexed according to the space group and site occupancies of the B27 orthorhombic crystal structure. This suggests that half the Ti (c) Wyckoff positions are occupied by Ti atoms and the other half are occupied by Nb atoms in the boride phase lattice. Creep deformation behavior is the main focus of this thesis and in particular understanding the dominant creep deformation mechanisms as a function of stress, temperature, and strain rate. Microstructure-creep relationships for Ti-Al-Nb-xB alloys were developed with the understanding gained. A rule-of-mixtures empirical model based on constituent phase volume fractions and strain rates was developed to predict the minimum creep rates of two-phase O+BCC microstructures. The most innovative results of this thesis were produced through the development of an in-situ creep testing methodology. The creep deformation evolution was chronicled in-situ during high temperature creep experiments, while creep displacement versus time data was simultaneously obtained. The in-situ experiments revealed that prior-BCC grain boundaries were the locus of damage accumulation during creep deformation. A methodology that allows in-situ observation of surface creep deformation as a function of creep displacement has yet to be presented in the literature.

Broad range tuning of structural and optical properties of Zn x Mg1-x O nanostructures grown by vapor transport method

NASA Astrophysics Data System (ADS)

Vanjaria, Jignesh V.; Azhar, Ebraheem Ali; Yu, Hongbin

2016-11-01

One-dimensional (1D) Zn x Mg1-x O nanomaterials have drawn global attention due to their remarkable chemical and physical properties, and their diverse current and future technological applications. In this work, 1D ZnMgO nanostructures with different magnesium concentrations and different morphologies were grown directly on zinc oxide-coated silicon substrates by thermal evaporation of zinc oxide, magnesium boride and graphite powders. Highly well-defined Mg-rich ZnMgO nanorods with a rock salt structure and Zn-rich ZnMgO nanostructures with a wurtzite structure have been deposited individually by careful optimization of the source mixture and process parameters. Structural and optical properties of the deposited products were studied by scanning electron microscopy, energy dispersive x-ray spectroscopy, x-ray diffraction, and Raman spectroscopy. Cathodoluminescence measurements demonstrate strong dominant peaks at 3.3 eV in Mg poor ZnMgO nanostructures and 4.8 eV in Mg rich nanostructures implying that the ZnMgO nanostructures can be used for the fabrication of deep UV optoelectronic devices. A mechanism for the formation and achieved diverse morphology of the ZnMgO nanostructures was proposed based on the characterization results.

Magnetism and structural chemistry of ternary borides RE2MB 6 ( RE = rare earth, M = Ru, Os)

NASA Astrophysics Data System (ADS)

Hiebl, K.; Rogl, P.; Nowotny, H.

1984-10-01

The magnetic behavior of the ternary borides RE2RuB 6 and RE2OsB 6 ( RE = Y, Gd, Tb, Dy, Ho, Er, Tm, Yb, Lu) was studied in the temperature range 1.5 K < T < 1100 K. All compounds crystallize with the Y 2ReB 6-type structure and are characterized by direct RE- RE contacts and the formation of planar infinite two-dimensional rigid boron nets. The magnetic properties reveal a typical Van Vleck paramagnetism of free RE3+-ions at temperatures higher than 200 K with ferromagnetic interaction in the low-temperature range T < 55 K. The ferromagnetic ordering temperatures vary with the De Gennes factor. There is no indication for a magnetic contribution from the Ru(Os)-sublattice. Above 1.8 K none of the samples were found to be superconducting.

Electronic structure and mechanical properties of osmium borides, carbides and nitrides from first principles

NASA Astrophysics Data System (ADS)

Liang, Yongcheng; Zhao, Jianzhi; Zhang, Bin

2008-06-01

The stabilities, mechanical properties and electronic structures of osmium boride (OsB), carbide (OsC) and nitride (OsN), in the tungsten carbide (WC), rocksalt (NaCl), cesium chloride (CsCl) and zinc blende (ZnS) structures respectively, are systematically predicted by calculations from first-principles. Only four phases, namely, OsB(WC), OsB(CsCl), OsC(WC), and OsC(ZnS), are mechanically stable, and none is a superhard compound, contrary to previous speculation. Most importantly, we find that the changing trends of bulk modulus and shear modulus are completely different for OsB, OsC and OsN in same hexagonal WC structure, which indicates that the underlying sources of hardness and incompressibility are fundamentally different: the former is determined by bonding nature while the latter is closely associated with valence electron density.

Magnetic and magnetothermal studies of iron boride (FeB) nanoparticles

NASA Astrophysics Data System (ADS)

Hamayun, M. Asif; Abramchuk, Mykola; Alnasir, Hisham; Khan, Mohsin; Pak, Chongin; Lenhert, Steven; Ghazanfari, Lida; Shatruk, Michael; Manzoor, Sadia

2018-04-01

We report magnetic and magnetothermal properties of iron boride (FeB) nanoparticles prepared by surfactant-assisted ball milling of arc-melted bulk ingots of this binary alloy. Size-dependent magnetic properties were used to identify the transition to the single domain limit and calculate the anisotropy and exchange stiffness constants for this system. Extended milling is seen to produce coercivity enhancement and exchange bias of up to 270 Ôe at room temperature. The magnetothermal properties were investigated by measuring the response of single domain FeB nanoparticles to externally applied ac magnetic fields. All investigated particle sizes show a significant heating response, demonstrating their potential as candidates for magnetically induced hyperthermia. FeB nanoparticles were encapsulated into lipophilic domains of liposomes as evidenced by TEM. Exposure of HeLa cells to these liposomes did not affect cell viability, suggesting the biocompatibility of these new magnetic nanomaterials.

Identification of delamination failure of boride layer on common Cr-based steels

NASA Astrophysics Data System (ADS)

Taktak, Sukru; Tasgetiren, Suleyman

2006-10-01

Adhesion is an important aspect in the reliability of coated components. With low-adhesion of interfaces, different crack paths may develop depending on the local stress field at the interface and the fracture toughness of the coating, substrate, and interface. In the current study, an attempt has been made to identify the delamination failure of coated Cr-based steels by boronizing. For this reason, two commonly used steels (AISI H13, AISI 304) are considered. The steels contain 5.3 and 18.3 wt.% Cr, respectively. Boriding treatment is carried out in a slurry salt bath consisting of borax, boric acid, and ferrosilicon at a temperature range of 800 950 °C for 3, 5, and 7 h. The general properties of the boron coating are obtained by mechanical and metallographic characterization tests. For identification of coating layer failure, some fracture toughness tests and the Daimler-Benz Rockwell-C adhesion test are used.

Corrosion Issues for Ceramics in Gas Turbines

NASA Technical Reports Server (NTRS)

Jacobson, Nathan S.; Fox, Dennis S.; Smialek, James L.; Opila, Elizabeth J.; Tortorelli, Peter F.; More, Karren L.; Nickel, Klaus G.; Hirata, Takehiko; Yoshida, Makoto; Yuri, Isao

2000-01-01

The requirements for hot-gas-path materials in gas turbine engines are demanding. These materials must maintain high strength and creep resistance in a particularly aggressive environment. A typical gas turbine environment involves high temperatures, rapid gas flow rates, high pressures, and a complex mixture of aggressive gases. Figure 26.1 illustrates the requirements for components of an aircraft engine and critical issues [1]. Currently, heat engines are constructed of metal alloys, which meet these requirements within strict temperature limits. In order to extend these temperature limits, ceramic materials have been considered as potential engine materials, due to their high melting points and stability at high temperatures. These materials include oxides, carbides, borides, and nitrides. Interest in using these materials in engines appears to have begun in the 1940s with BeO-based porcelains [2]. During the 1950s, the efforts shifted to cermets. These were carbide-based materials intended to exploit the best properties of metals and ceramics. During the 1960s and 1970s, the silicon-based ceramics silicon carbide (SiC) and silicon nitride (Si3N4) were extensively developed. Although the desirable high-temperature properties of SiC and Si3N4 had long been known, consolidation of powders into component-sized bodies required the development of a series of specialized processing routes [3]. For SiC, the major consolidation routes are reaction bonding, hot-pressing, and sintering. The use of boron and carbon as additives which enable sintering was a particularly noteworthy advance [4]. For Si3N4 the major consolidation routes are reaction bonding and hot pressing [5]. Reaction-bonding involves nitridation of silicon powder. Hot pressing involves addition of various refractory oxides, such as magnesia (MgO), alumina (Al2O3), and yttria (y2O3). Variations on these processes include a number of routes including Hot Isostatic Pressing (HIP), gas-pressure sintering, sinter-HIPing, and Encapsulation-HIPing. It is important to note that each process involves the addition of secondary elements, which later were shown to dramatically influence oxidation and corrosion behavior. As dense bodies of silicon-based ceramics became more readily available, their desirable high temperature properties were confirmed. These materials retained strength to very high temperatures (i.e. 1300-1400 C). Further, they were lightweight and made from abundant materials. SiC and Si3N4 therefore emerged as leading ceramic candidates for components in heat engines, designed to operate at higher temperatures for better performance and fuel efficiency. The first US programs for ceramics in heat engines have been reviewed [6]. Selected programs on ceramic engine parts are summarized here in regard to their contributions to understanding the corrosion behavior of a heat engine environment.

Effect of Discharge Time on Plasma Electrolytic Borocarbonitriding of Pure Iron

NASA Astrophysics Data System (ADS)

Jin, Xiaoyue; Wu, Jie; Wang, Bin; Yang, Xuan; Chen, Lin; Qu, Yao; Xue, Wenbin

The plasma electrolytic borocarbonitriding (PEB/C/N) process on pure iron was carried out in 25% borax solution with glycerine and carbamide additives under different discharge time at 360V. The morphology and structure of PEB/C/N hardened layers were analyzed by SEM and XRD. The hardness profiles of hardened layers were measured by microhardness test. Corrosion behavior of PEB/C/N layers was evaluated by potentiodynamic polarization and electrochemical impedance spectroscopy (EIS). Their wear performance was carried out using a pin-disc friction and wear tester under dry sliding test. The PEB/C/N samples mainly consisted of α-Fe, Fe2B, Fe3C, FeN, FeB, Fe2O3 and Fe4N phases, and the Fe2B phase was the dominant phase in the boride layer. It was found that the thickness of boride layer increased with the discharge time and reached 14μm after 60min treatment. The microhardness of the boride layer was up to 2100HV, which was much higher than that of the bare pure iron (about 150HV). After PEB/C/N treatment, the corrosion resistance of pure iron was slightly improved. The friction coefficient of PEB/C/N treated pure iron decreased to 0.129 from 0.556 of pure iron substrate. The wear rate of the PEB/C/N layer after 60min under dry sliding against ZrO2 ball was only 1/10 of that of the bare pure iron. The PEB/C/N treatment is an effective way to improve the wear behavior of pure iron.

Correlation between structural stability of LiBH4 and cation electronegativity in metal borides: an experimental insight for catalyst design.

PubMed

Cai, Weitong; Yang, Yuanzheng; Tao, Pingjun; Ouyang, Liuzhang; Wang, Hui

2018-04-03

Nanosized metal borides MBx (M = Mg, Ti, Fe, Si) are found to play an important role in enhancing the hydrogen storage performance of LiBH4 in this work. The hydrogen storage behavior and mechanism of these modified systems are investigated through TPD-MS, XRD, FTIR and SEM characterization methods. By introducing these metal borides into LiBH4 through ball milling, the systems display three dehydrogenation stages disclosing their similarity and distinction. The 1st stage starts at 190 °C, the 2nd stage ranges from 280 °C to 400 °C and the 3rd stage ends at 550 °C with a peak at round 440 °C similar to that of pristine LiBH4. Distinguishing features exist at the 2nd stage revealing the effectiveness of MBx in an order of MgB2 < TiB2 < FeB < SiB4. Significantly, reversibility up to 9.7 wt% is achieved from LiBH4 with assistance of SiB4. The catalytic effect of MBx is influenced by the Pauling electronegativity of M in MBx and the interfacial contact characteristic between LiBH4 and MBx. The larger electronegativity leads to an enhanced catalytic effect and consequently lower temperature at the major stage. In contrast to the components in the solid state, the molten LiBH4 promotes a catalytic effect due to a superior interfacial contact. These results provide an insight into designing high-performance catalysts applied to LiBH4 as a hydrogen storage material.

Boron-Based Hydrogen Storage: Ternary Borides and Beyond

DOE Office of Scientific and Technical Information (OSTI.GOV)

Vajo, John J.

DOE continues to seek reversible solid-state hydrogen materials with hydrogen densities of ≥11 wt% and ≥80 g/L that can deliver hydrogen and be recharged at moderate temperatures (≤100 °C) and pressures (≤100 bar) enabling incorporation into hydrogen storage systems suitable for transportation applications. Boron-based hydrogen storage materials have the potential to meet the density requirements given boron’s low atomic weight, high chemical valance, and versatile chemistry. However, the rates of hydrogen exchange in boron-based compounds are thus far much too slow for practical applications. Although contributing to the high hydrogen densities, the high valance of boron also leads to slowmore » rates of hydrogen exchange due to extensive boron-boron atom rearrangements during hydrogen cycling. This rearrangement often leads to multiple solid phases occurring over hydrogen release and recharge cycles. These phases must nucleate and react with each other across solid-solid phase boundaries leading to energy barriers that slow the rates of hydrogen exchange. This project sought to overcome the slow rates of hydrogen exchange in boron-based hydrogen storage materials by minimizing the number of solid phases and the boron atom rearrangement over a hydrogen release and recharge cycle. Two novel approaches were explored: 1) developing matched pairs of ternary borides and mixed-metal borohydrides that could exchange hydrogen with only one hydrogenated phase (the mixed-metal borohydride) and only one dehydrogenated phase (the ternary boride); and 2) developing boranes that could release hydrogen by being lithiated using lithium hydride with no boron-boron atom rearrangement.« less

DOE Office of Scientific and Technical Information (OSTI.GOV)

Sitler, Steven J.; Raja, Krishnan S.; Charit, Indrajit

Solid solutions of HfB 2-ZrB 2 mixtures were prepared by high-energy ball milling of diboride and additive powders followed by spark plasma sintering (SPS). A mixture of stoichiometric 1:1 HfB 2-ZrB 2 borides was the base composition to which Hf, Zr, Ta, LaB 6 or Gd 2O 3 was added. Hf, Zr and Ta were added in order to bring the boron-to-metal ratio down to 1.86, rendering the boride as MeB 1.86. In the case of LaB 6 and Gd 2O 3, 1.8 mol% was added. Electroanalytical behavior of hydrogen evolution reactions was evaluated in 1 M H 2SO 4more » and 1 M NaOH solutions. The LaB 6 additive material showed Tafel slopes of 125 and 90 mV/decade in acidic and alkaline solutions respectively. The Hf and Zr rich samples showed Tafel slopes of about 120 mV/decade in both electrolytes. The over potentials of hydrogen evolution reactions (at 10 mA/cm 2) in the alkaline solution were about 100 mV lower than those in acidic solution. The metal-rich diborides and addition of LaB 6 showed better hydrogen evolution reaction (HER) activities than the base 1:1 HfB 2-ZrB 2 stoichiometric diboride solid solution. Furthermore, the higher activity of metal-rich borides could be attributed to the increased electron population at the d-orbitals of the metal shown by band structure modeling calculations using the Density Functional Theory approach.« less

Photovoltaic cell

DOEpatents

Gordon, Roy G.; Kurtz, Sarah

1984-11-27

In a photovoltaic cell structure containing a visibly transparent, electrically conductive first layer of metal oxide, and a light-absorbing semiconductive photovoltaic second layer, the improvement comprising a thin layer of transition metal nitride, carbide or boride interposed between said first and second layers.

DFT investigations of hydrogen storage materials

NASA Astrophysics Data System (ADS)

Wang, Gang

Hydrogen serves as a promising new energy source having no pollution and abundant on earth. However the most difficult problem of applying hydrogen is to store it effectively and safely, which is smartly resolved by attempting to keep hydrogen in some metal hydrides to reach a high hydrogen density in a safe way. There are several promising metal hydrides, the thermodynamic and chemical properties of which are to be investigated in this dissertation. Sodium alanate (NaAlH4) is one of the promising metal hydrides with high hydrogen storage capacity around 7.4 wt. % and relatively low decomposition temperature of around 100 °C with proper catalyst. Sodium hydride is a product of the decomposition of NaAlH4 that may affect the dynamics of NaAlH4. The two materials with oxygen contamination such as OH- may influence the kinetics of the dehydriding/rehydriding processes. Thus the solid solubility of OH - groups (NaOH) in NaAlH4 and NaH is studied theoretically by DFT calculations. Magnesium boride [Mg(BH4)2] is has higher hydrogen capacity about 14.9 wt. % and the decomposition temparture of around 250 °C. However one flaw restraining its application is that some polyboron compounds like MgB12H12 preventing from further release of hydrogen. Adding some transition metals that form magnesium transition metal ternary borohydride [MgaTMb(BH4)c] may simply the decomposition process to release hydrogen with ternary borides (MgaTMbBc). The search for the probable ternary borides and the corresponding pseudo phase diagrams as well as the decomposition thermodynamics are performed using DFT calculations and GCLP method to present some possible candidates.

Metallic Borides, La 2 Re 3 B 7 and La 3 Re 2 B 5 , Featuring Extensive Boron–Boron Bonding

DOE Office of Scientific and Technical Information (OSTI.GOV)

Bugaris, Daniel E.; Malliakas, Christos D.; Chung, Duck Young

We synthesized La 2Re 3B 7 and La 3Re 2B 5 in single-crystalline form from a molten La/Ni eutectic at 1000°C, in the first example of the flux crystal growth of ternary rare-earth rhenium borides. Both compounds crystallize in their own orthorhombic structure types, with La 2Re 3B 7 (space group Pcca) having lattice parameters a = 7.657(2) Å, b = 6.755(1) Å, and c = 11.617(2) Å, and La 3Re 2B 5 (space group Pmma) having lattice parameters a = 10.809(2) Å, b = 5.287(1) Å, and c = 5.747(1) Å. Furthermore, the compounds possess three-dimensional framework structures thatmore » are built up from rhenium boride polyhedra and boron-boron bonding. La 3Re 2B 5 features fairly common B 2 dumbbells, whereas La 2Re 3B 7 has unique one-dimensional subunits composed of alternating triangular B3 and trans-B4 zigzag chain fragments. Also observed in La 3Re 2B 5 is an unusual coordination of B by an octahedron of La atoms. Electronic band structure calculations predict that La 2Re 3B 7 is a semimetal, which is observed in the electrical resistivity data as measured on single crystals, with behavior obeying the Bloch-Grüneisen model and a room-temperature resistivity ρ300K of ~ 375 μΩ cm. The electronic band structure calculations also suggest that La 3Re 2B 5 is a regular metal.« less

Metallic Borides, La 2 Re 3 B 7 and La 3 Re 2 B 5 , Featuring Extensive Boron–Boron Bonding

DOE PAGES

Bugaris, Daniel E.; Malliakas, Christos D.; Chung, Duck Young; ...

2016-01-26

We synthesized La 2Re 3B 7 and La 3Re 2B 5 in single-crystalline form from a molten La/Ni eutectic at 1000°C, in the first example of the flux crystal growth of ternary rare-earth rhenium borides. Both compounds crystallize in their own orthorhombic structure types, with La 2Re 3B 7 (space group Pcca) having lattice parameters a = 7.657(2) Å, b = 6.755(1) Å, and c = 11.617(2) Å, and La 3Re 2B 5 (space group Pmma) having lattice parameters a = 10.809(2) Å, b = 5.287(1) Å, and c = 5.747(1) Å. Furthermore, the compounds possess three-dimensional framework structures thatmore » are built up from rhenium boride polyhedra and boron-boron bonding. La 3Re 2B 5 features fairly common B 2 dumbbells, whereas La 2Re 3B 7 has unique one-dimensional subunits composed of alternating triangular B3 and trans-B4 zigzag chain fragments. Also observed in La 3Re 2B 5 is an unusual coordination of B by an octahedron of La atoms. Electronic band structure calculations predict that La 2Re 3B 7 is a semimetal, which is observed in the electrical resistivity data as measured on single crystals, with behavior obeying the Bloch-Grüneisen model and a room-temperature resistivity ρ300K of ~ 375 μΩ cm. The electronic band structure calculations also suggest that La 3Re 2B 5 is a regular metal.« less

Metal-Rich Transition Metal Diborides as Electrocatalysts for Hydrogen Evolution Reactions in a Wide Range of pH

DOE PAGES

Sitler, Steven J.; Raja, Krishnan S.; Charit, Indrajit

2016-09-23

Solid solutions of HfB 2-ZrB 2 mixtures were prepared by high-energy ball milling of diboride and additive powders followed by spark plasma sintering (SPS). A mixture of stoichiometric 1:1 HfB 2-ZrB 2 borides was the base composition to which Hf, Zr, Ta, LaB 6 or Gd 2O 3 was added. Hf, Zr and Ta were added in order to bring the boron-to-metal ratio down to 1.86, rendering the boride as MeB 1.86. In the case of LaB 6 and Gd 2O 3, 1.8 mol% was added. Electroanalytical behavior of hydrogen evolution reactions was evaluated in 1 M H 2SO 4more » and 1 M NaOH solutions. The LaB 6 additive material showed Tafel slopes of 125 and 90 mV/decade in acidic and alkaline solutions respectively. The Hf and Zr rich samples showed Tafel slopes of about 120 mV/decade in both electrolytes. The over potentials of hydrogen evolution reactions (at 10 mA/cm 2) in the alkaline solution were about 100 mV lower than those in acidic solution. The metal-rich diborides and addition of LaB 6 showed better hydrogen evolution reaction (HER) activities than the base 1:1 HfB 2-ZrB 2 stoichiometric diboride solid solution. Furthermore, the higher activity of metal-rich borides could be attributed to the increased electron population at the d-orbitals of the metal shown by band structure modeling calculations using the Density Functional Theory approach.« less

Thermal properties of zirconium diboride -- transition metal boride solid solutions

NASA Astrophysics Data System (ADS)

McClane, Devon Lee

This research focuses on the thermal properties of zirconium diboride (ZrB2) based ceramics. The overall goal was to improve the understanding of how different transition metal (TM) additives influence thermal transport in ZrB2. To achieve this, ZrB2 with 0.5 wt% carbon, and 3 mol% of individual transition metal borides, was densified by hot-press sintering. The transition metals that were investigated were: Y, Ti, Hf, V, Nb, Ta, Cr, Mo, W, and Re. The room temperature thermal diffusivities of the compositions ranged from 0.331 cm2/s for nominally pure ZrB2 to 0.105 cm2/s for (Zr,Cr)B2 and converged around 0.155cm2/s at higher temperatures for all compositions. Thermal conductivities were calculated from the diffusivities, using temperature-dependent values for density and heat capacity. The electron contribution to thermal conductivity was calculated from measured electrical resistivity according to the Wiedemann-Franz law. The phonon contribution to thermal conductivity was calculated by subtracting the electron contribution from the total thermal conductivity. Rietveld refinement of x-ray diffraction data was used to determine the lattice parameters of the compositions. The decrease in thermal conductivity for individual additives correlated directly to the metallic radius of the additive. Additional strain appeared to exist for additives when the stable TM boride for that metal had different crystal symmetries than ZrB2. This research provided insight into how additives and impurities affect thermal transport in ZrB2. The research potentially offers a basis for future modeling of thermal conductivity in ultra-high temperature ceramics based on the correlation between metallic radius and the decrease in thermal conductivity.

Boride Formation Induced by pcBN Tool Wear in Friction-Stir-Welded Stainless Steels

NASA Astrophysics Data System (ADS)

Park, Seung Hwan C.; Sato, Yutaka S.; Kokawa, Hiroyuki; Okamoto, Kazutaka; Hirano, Satoshi; Inagaki, Masahisa

2009-03-01

The wear of polycrystalline cubic boron nitride (pcBN) tool and its effect on second phase formation were investigated in stainless steel friction-stir (FS) welds. The nitrogen content and the flow stress were analyzed in these welds to examine pcBN tool wear. The nitrogen content in stir zone (SZ) was found to be higher in the austenitic stainless steel FS welds than in the ferritic and duplex stainless steel welds. The flow stress of austenitic stainless steels was almost 1.5 times larger than that of ferritic and duplex stainless steels. These results suggest that the higher flow stress causes the severe tool wear in austenitic stainless steels, which results in greater nitrogen pickup in austenitic stainless steel FS welds. From the microstructural observation, a possibility was suggested that Cr-rich borides with a crystallographic structure of Cr2B and Cr5B3 formed through the reaction between the increased boron and nitrogen and the matrix during FS welding (FSW).

Transition metal carbides, nitrides and borides, and their oxygen containing analogs useful as water gas shift catalysts

DOEpatents

Thompson, Levi T.; Patt, Jeremy; Moon, Dong Ju; Phillips, Cory

2003-09-23

Mono- and bimetallic transition metal carbides, nitrides and borides, and their oxygen containing analogs (e.g. oxycarbides) for use as water gas shift catalysts are described. In a preferred embodiment, the catalysts have the general formula of M1.sub.A M2.sub.B Z.sub.C O.sub.D, wherein M1 is selected from the group consisting of Mo, W, and combinations thereof; M2 is selected from the group consisting of Fe, Ni, Cu, Co, and combinations thereof; Z is selected from the group consisting of carbon, nitrogen, boron, and combinations thereof; A is an integer; B is 0 or an integer greater than 0; C is an integer; O is oxygen; and D is 0 or an integer greater than 0. The catalysts exhibit good reactivity, stability, and sulfur tolerance, as compared to conventional water shift gas catalysts. These catalysts hold promise for use in conjunction with proton exchange membrane fuel cell powered systems.

Ultra High Temperature Ceramics' Processing Routes and Microstructures Compared

NASA Technical Reports Server (NTRS)

Gusman, Michael; Stackpoole, Mairead; Johnson, Sylvia; Gasch, Matt; Lau, Kai-Hung; Sanjurjo, Angel

2009-01-01

Ultra High Temperature Ceramics (UHTCs), such as HfB2 and ZrB2 composites containing SiC, are known to have good thermal shock resistance and high thermal conductivity at elevated temperatures. These UHTCs have been proposed for a number of structural applications in hypersonic vehicles, nozzles, and sharp leading edges. NASA Ames is working on controlling UHTC properties (especially, mechanical properties, thermal conductivity, and oxidation resistance) through processing, composition, and microstructure. In addition to using traditional methods of combining additives to boride powders, we are preparing UHTCs using coat ing powders to produce both borides and additives. These coatings and additions to the powders are used to manipulate and control grain-boundary composition and second- and third-phase variations within the UHTCs. Controlling the composition of high temperature oxidation by-products is also an important consideration. The powders are consolidated by hot-pressing or field-assisted sintering (FAS). Comparisons of microstructures and hardness data will be presented.

A superconducting battery material: Lithium gold boride (LiAu3B)

NASA Astrophysics Data System (ADS)

Aydin, Sezgin; Şimşek, Mehmet

2018-04-01

The superconducting and potential cathode material properties of ternary boride of LiAu3B have been investigated by density functional first principles. The Li-concentration effects on the actual electronic and structural properties, namely the properties of LixAu9B3 (x = 0, 1, 2) sub-systems are studied. It is remarkably shown that the existence of Li-atoms has no considerable effect on the structural properties of Au-B skeleton in LiAu3B. Then, it can be offered as a potential cathode material for Li-ion batteries with the very small volume deviation of 0.42%, and the suitable average open circuit voltage of ∼1.30 V. Furthermore, the vibrational and superconducting properties such as electron-phonon coupling constant (λ) and critical temperature (Tc) of LiAu3B are studied. The calculated results suggest that LiAu3B should be a superconductor with Tc ∼5.8 K, also.

The Nature of the Microstructure and Interface Boundary Formation in Directionally Solidified Ceramic Boride Composites

DTIC Science & Technology

2011-05-01

failure resistance, which results from their different microplasticity (microbrittleness) and relaxation ability. In order to evaluate the... microplasticity (microbrittleness) in the series of isomorphic hexaborides produced by zone melting we have plotted a number of statistical curves that show

Ultracapacitor current collector

DOEpatents

Jerabek, Elihu Calfin; Mikkor, Mati

2001-10-16

An ultracapacitor having two solid, nonporous current collectors, two porous electrodes separating the collectors, a porous separator between the electrodes and an electrolyte occupying the pores in the electrodes and separator. At least one of the current collectors comprises a conductive metal substrate coated with a metal nitride, carbide or boride coating.

Pressed boride cathodes

NASA Technical Reports Server (NTRS)

Wolski, W.

1985-01-01

Results of experimental studies of emission cathodes made from lanthanum, yttrium, and gadolinium hexaborides are presented. Maximum thermal emission was obtained from lanthanum hexaboride electrodes. The hexaboride cathodes operated stably under conditions of large current density power draw, at high voltages and poor vacuum. A microtron electron gun with a lanthanum hexaboride cathode is described.

Thermophysical and Electronic Properties Information Analysis Center (TEPIAC): A Continuing Systematic Program on Tables of Thermophysical and Electronic Properties of Materials.

DTIC Science & Technology

1977-02-01

oxides and their mixtures, arsenides, borides, bromides , carbides , chlorides , fluoride s, nitride s, phosphides, silicides , sulfides , tellurides...ivity of alkali elements (lithium , sodium , potassium , rubi- dium , ces ium , and francium) and contains recomme nded reference values generated

Molecular Modeling of High-Temperature Oxidation of Refractory Borides

DTIC Science & Technology

2008-02-01

generate the classical potential, we adopt the van Beest , Kramer and van Santen (BKS) parameterization for Si-O interactions, but fit B-O and Si-B...seminar at Department of Aerospace and Mechanical Engineering, University of Notre Dame, March 20, 2007. 6 Los Alamos National Lab Physics & Theoretical

Lithium Borides - High Energy Materials

DTIC Science & Technology

2000-02-28

1993. 99, 7983. (32) Pulay P.; Hamilton. T. P. J. Chem. Phys. 1988, 88. 4926 . (33) Frisch. M. J.: Trucks. G. W.; Schlegel. H. B.: Gill, P. M. W...25] P.V. Sudhakar, K. Lammertsma, J. Chem. Phys. 99 (1993) 7929. [26] M.J. van der Woerd, K. Lammertsma, B.J. Duke, H.F. Schaefer , III, J

Grain Refinement and Texture Mitigation in Low Boron Containing TiAl-Alloys

NASA Astrophysics Data System (ADS)

Hecht, Ulrike; Witusiewicz, Victor T.

2017-12-01

Controlling the grain size and texture of lamellar TiAl-alloys is essential for well-balanced creep and fatigue properties. Excellent refinement and texture mitigation are achieved in aluminum lean alloys by low boron additions of 0.2 at.%. This amount is sufficient to promote in situ formation of ultrafine borides during the last stages of body centered cubic (BCC) solidification. The borides subsequently serve as nucleation sites for hexagonal close packed (HCP) during the BCC-HCP phase transformation. Bridgman solidification experiments with alloy Ti-43Al-8Nb-0.2C-0.2B were performed under a different growth velocity, i.e., cooling rate, to evaluate the HCP grain size distribution and texture. For slow-to-moderate cooling rates, about 65% of HCP grains are randomly oriented, despite the pronounced texture of the parent BCC phase resulting from directional solidification. For high cooling rates, obtained by quenching, texture mitigation is less pronounced. Only 28% of the HCP grains are randomly oriented, the majority being crystallographic variants of the Burgers orientation relationship.

An XPS study of the adherence of refractory carbide, silicide, and boride RF-sputtered wear-resistant coatings. [X-ray Photoelectron Spectroscopy of steel surfaces

NASA Technical Reports Server (NTRS)

Brainard, W. A.; Wheeler, D. R.

1978-01-01

Radio frequency sputtering was used to deposit refractory carbide, silicide, and boride coatings on 440-C steel substrates. Both sputter etched and pre-oxidized substrates were used and the films were deposited with and without a substrate bias. The composition of the coatings was determined as a function of depth by X-ray photoelectron spectroscopy combined with argon ion etching. Friction and wear tests were conducted to evaluate coating adherence. In the interfacial region there was evidence that bias may produce a graded interface for some compounds. Biasing, while generally improving bulk film stoichiometry, can adversely affect adherence by removing interfacial oxide layers. Oxides of all film constituents except carbon and iron were present in all cases but the iron oxide coverage was only complete on the preoxidized substrates. The film and iron oxides were mixed in the MoSi2 and Mo2C films but layered in the Mo2B5 films. In the case of mixed oxides, preoxidation enhanced film adherence. In the layered case it did not.

Boronization and Carburization of Superplastic Stainless Steel and Titanium-Based Alloys

PubMed Central

Matsushita, Masafumi

2011-01-01

Bronization and carburization of fine-grain superplastic stainless steel is reviewed, and new experimental results for fine grain Ti88.5Al4.5V3Fe2Mo2 are reported. In superplastic duplex stainless steel, the diffusion of carbon and boron is faster than in non-superplastic duplex stainless steel. Further, diffusion is activated by uniaxial compressive stress. Moreover, non-superplastic duplex stainless steel shows typical grain boundary diffusion; however, inner grain diffusion is confirmed in superplastic stainless steel. The presence of Fe and Cr carbides or borides is confirmed by X-ray diffraction, which indicates that the diffused carbon and boron react with the Fe and Cr in superplastic stainless steel. The Vickers hardness of the carburized and boronized layers is similar to that achieved with other surface treatments such as electro-deposition. Diffusion of boron into the superplastic Ti88.5Al4.5V3Fe2Mo2 alloy was investigated. The hardness of the surface exposed to boron powder can be increased by annealing above the superplastic temperature. However, the Vickers hardness is lower than that of Ti boride. PMID:28824144

Pt-B System Revisited: Pt2B, a New Structure Type of Binary Borides. Ternary WAl12-Type Derivative Borides.

PubMed

Sologub, Oksana; Salamakha, Leonid; Rogl, Peter; Stöger, Berthold; Bauer, Ernst; Bernardi, Johannes; Giester, Gerald; Waas, Monika; Svagera, Robert

2015-11-16

On the basis of a detailed study applying X-ray single-crystal and powder diffraction, differential scanning calorimetry, and scanning electron microscopy analysis, it was possible to resolve existing uncertainties in the Pt-rich section (≥65 atom % Pt) of the binary Pt-B phase diagram above 600 °C. The formation of a unique structure has been observed for Pt2B [X-ray single-crystal data: space group C2/m, a = 1.62717(11) nm, b = 0.32788(2) nm, c = 0.44200(3) nm, β = 104.401(4)°, RF2 = 0.030]. Within the homogeneity range of "Pt3B", X-ray powder diffraction phase analysis prompted two structural modifications as a function of temperature. The crystal structure of "hT-Pt3B" complies with the hitherto reported structure of anti-MoS2 [space group P63/mmc, a = 0.279377(2) nm, c = 1.04895(1) nm, RF = 0.075, RI = 0.090]. The structure of the new "[Formula: see text]T-Pt3B" is still unknown. The formation of previously reported Pt∼4B has not been confirmed from binary samples. Exploration of the Pt-rich section of the Pt-Cu-B system at 600 °C revealed a new ternary compound, Pt12CuB6-y [X-ray single-crystal data: space group Im3̅, a = 0.75790(2) nm, y = 3, RF2 = 0.0129], which exhibits the filled WAl12-type structure accommodating boron in the interstitial trigonal-prismatic site 12e. The isotypic platinum-aluminum-boride was synthesized and studied. The solubility of copper in binary platinum borides has been found to attain ∼7 atom % Cu for Pt2B but to be insignificant for "[Formula: see text]T-Pt3B". The architecture of the new Pt2B structure combines puckered layers of boron-filled and empty [Pt6] octahedra (anti-CaCl2-type fragment) alternating along the x axis with a double layer of boron-semifilled [Pt6] trigonal prisms interbedded with a layer of empty tetrahedra and tetragonal pyramids (B-deficient α-T[Formula: see text]I fragment). Assuming boron vacancies ordering (space group R3), the Pt12CuB6-y structure exhibits serpentine-like columns of edge-connected boron-filled [Pt6] trigonal prisms running infinitely along the z axis and embedding the icosahedrally coordinated Cu atom. Pt2B, (Pt1-yCuy)2B (y = 0.045), and Pt12CuB6-y (y = 3) behave metallically, as revealed by temperature-dependent electrical resistivity measurements.

PREFACE: The 16th International Symposium on Boron, Borides and Related Materials (ISBB 2008)

NASA Astrophysics Data System (ADS)

Tanaka, Takaho

2009-07-01

This volume of Journal of Physics: Conference Series contains invited and contributed peer-reviewed papers that were presented at the 16th International Symposium on Boron, Borides and Related Materials (ISBB 2008), which was held on 7-12 September 2008, at Kunibiki Messe, Matsue, Japan. This triennial symposium has a half-century long history starting from the 1st meeting in 1959 at Asbury Park, New Jersey. We were very pleased to organize ISBB 2008, which gathered chemists, physicists, materials scientists as well as diamond and high-pressure researchers. This meeting had a strong background in the boron-related Japanese research history, which includes the discovery of superconductivity in MgB2 and development of Nd-Fe-B hard magnets and of YB66 soft X-ray monochromator. The scope of ISBB 2008 spans both basic and applied interdisciplinary research that is centered on boron, borides and related materials, and the collection of articles defines the state of the art in research on these materials. The topics are centered on: 1. Preparation of new materials (single crystals, thin films, nanostructures, ceramics, etc) under normal or extreme conditions. 2. Crystal structure and chemical bonding (new crystal structures, nonstoichiometry, defects, clusters, quantum-chemical calculations). 3. Physical and chemical properties (band structure, phonon spectra, superconductivity; optical, electrical, magnetic, emissive, mechanical properties; phase diagrams, thermodynamics, catalytic activity, etc) in a wide range of temperatures and pressures. 4. Applications and prospects (thermoelectric converters, composites, ceramics, coatings, etc) There were a few discoveries of new materials, such as nanomaterials, and developments in applications. Many contributions were related to 4f heavy Fermion systems of rare-earth borides. Exotic mechanisms of magnetism and Kondo effects have been discussed, which may indicate another direction of development of boride. Two special sessions, 'Boron chemistry' and 'Superconductivity', were also held at the symposium. The session on Boron chemistry was planned to honor the scientific work in boron chemistry of Professor J Bauer on the occasion of his retirement. Many recent results were discussed in the session, and Professor Bauer himself introduced novel rare-earth-boron-carbon compounds RE10B7C10 (RE = Gd - Er) in his lecture. In the latter session, on the basis of recent discoveries of superconductivity in MgB2 and in β-boron under high pressure, the superconductivity of boron and related materials was discussed and the superconductivity of boron-doped diamond was also addressed. More than 120 participants from 16 countries attended the ISBB 2008, and active presentations (22 invited, 33 oral and 68 posters) and discussions suggest that research on boron and borides is entering a new phase of development. This volume contains 46 articles from 52 submitted manuscripts. The reviewers were invited not only from symposium participants but also from specialists worldwide, and they did a great job of evaluating and commenting on the submitted manuscripts to maintain the highest quality standard of this volume. Recent discoveries of superconductivity in boron under high pressure, synthesis of a new allotrope of boron and of various boron and boride nanostructures will lead this highly interdisciplinary field of science, which will further grow and gain attention in terms of both basic and applied research. In this context, we are very much looking forward to the next symposium, which will be held in Istanbul, Turkey, in 2011, organized by Professor Onuralp Yucel, Istanbul Technical University. Turkey currently has the world highest share of borate production and is expected to be involved more in boron-related research. Acknowledgements We gratefully acknowledge the style improvement by Dr K Iakoubovskii, and sincerely thank Shimane Prefecture and Matsue City for their financial support. The symposium was also supported by Tokyo University of Science, Suwa and foundations including, the Kajima Foundation, Foundation for Promotion of Material Science and Technology of Japan and Nippon Sheet Glass Foundation for Materials Science and Engineering, as well as companies including JFE Steel Corporation, Shincron Co, Ltd, Toyo Kohan Co, Ltd, Fukuda Metal Foil and Powder Co, Ltd, Japan New Metals Co, Ltd, H C Starck Ltd and Fritsch Japan Co, Ltd. Editors Chair Takaho Tanaka (National Institute for Materials Science, Japan) Vice chairs Koun Shirai (Osaka University, Japan) Kaoru Kimura (The University of Tokyo, Japan) Ken-ichi Takagi (Tokyo City University, Japan) Touetsu Shishido (Tohoku University, Japan) Shigeru Okada (Kokushikan University) Hideaki Itoh (Nagoya University,Japan) Katsumitsu Nakamura (Nihon University, Japan) Organizing committee of ISBB 2008 K Takagi Chairman (Tokyo City University) T Tanaka Program Committee Chairman (National Institute for Materials Science) K Kimura Secretary (The University of Tokyo) J Akimitsu (Aoyama University)K Shirai (Osaka University) H Itoh (Nagoya University)T Shishido (Tohoku University) K Nakamura (Nihon University)K Soga (Tokyo University of Science) K Nishiyama (Tokyo University of Science, Suwa)M Takeda (Nagaoka University of Technology) S Okada (Kokushikan University)Y Yamazaki (Toyo Kohan Co, Ltd) International Scientific Committee 0f ISBB (2008-2011) K Takagi Chairman (Japan) B Albert (Germany) J-F Halet (France) M Takeda (Japan) M Antadze (Georgia) H Hillebrecht (Germany) T Tanaka (Japan) J Bauer (France) W Jung (Germany) R Telle (Germany) I Boustani (Germany) K Kimura (Japan) M Trenary (USA) D Emin (USA) T Mori (Japan) O Tsagareishvili (Georgia) M Engler (Germany) P D Ownby (USA) H Werheit (Germany) N Frage (Israel) P Rogl (Austria) G Will (Germany) Yu Grin (Germany) S Shalamberidze (Georgia) O Yucel (Turkey) V N Gurin (Russia) N Shitsevalova (Ukraine) G Zhang (China)

Thermal emission property of solid solution Gd{sub 1-x}Nd{sub x}B{sub 6} (x=0, 0.6, 0.8)

DOE Office of Scientific and Technical Information (OSTI.GOV)

Xing Zhang, Jiu; Hong Bao, Li; Lin Zhou, Shen, E-mail: zjiuxing@bjut.edu.cn, E-mail: Baolihong_10@yahoo.com.cn, E-mail: zhoushenlin@emails.bjut.edu.cn

2011-07-01

In this paper, to further explore the excellent emission properties of rare earth boride cathode, herein we present the synthesis, characterization and properties of polycrystalline Nd{sub 1-x}Gd{sub x}B{sub 6} (x = 0, 0.6, 0.8) bulk via arc plasma and reactive SPS. (author)

Process research into metallic pipe wear of hot chamber die casting machines and methods ofincreasing wear resistance

NASA Astrophysics Data System (ADS)

Mukhametzyanova, G. F.; Kolesnikov, MS; Mukhametzyanov, I. R.; Astatshenko, V. I.

2017-09-01

The kinetics and reasons for metallic pipe wear of hot chamberzinc alloy die casting machines are established.Increasing metallic pipe wear components wear resistance is being achieved by means of die steelДИ - 22 with electroslag remelting modification and electron-beamremelting modification and after the processes of nitriding and boriding besides.

Nb2OsB2, with a new twofold superstructure of the U3Si2 type: Synthesis, crystal chemistry and chemical bonding

NASA Astrophysics Data System (ADS)

Mbarki, Mohammed; Touzani, Rachid St.; Fokwa, Boniface P. T.

2013-07-01

The new ternary metal-rich boride, Nb2OsB2, was synthesized by arc-melting the elements in a water-cooled copper crucible under an argon atmosphere. The compound was characterized from single-crystal X-ray data and EDX measurements. It crystallizes as a new superstructure (space group P4/mnc, no. 128) of the tetragonal U3Si2-structure type with lattice parameters a=5.922(1) Å and c=6.879(2) Å. All of the B atoms are involved in B2 dumbbells with B-B distances of 1.89(4) Å. Structure relaxation using VASP (Vienna ab intio Simulation Package) has confirmed the space group and the lattice parameters. According to electronic structure calculations (TB-LMTO-ASA), the homoatomic B-B interactions are optimized and very strong, but relatively strong heteroatomic Os-B, Nb-B and Nb-Os bonds are also found: These interactions, which together build a three-dimensional network, are mainly responsible for the structural stability of this new phase. The density of state at the Fermi level predicts metallic behavior, as expected, from this metal-rich boride.

The use of surface layer with boron in friction pairs lubricated by engine oils

NASA Astrophysics Data System (ADS)

Szczypiński-Sala, W.; Lubas, J.

2016-09-01

The aim of the present work is to determine the influence of surface layers with boron and engine oil on the processes of friction and wear in friction pairs. The ring samples with borided surface layer cooperated under test conditions with counterparts made with CuPb30 and AlSn20 bearing alloys. During the tests, the friction pairs were lubricated with 15W/40 Lotos mineral oil and 5W/40 Lotos synthetic oil. The lubrication of friction area with Lotos mineral oil causes the reduction of the friction force, the temperature in the friction area and the wear of the bearing alloys under study, whereas the lubrication with Lotos synthetic oil reduces the changes in the geometrical structure of the cooperating friction pair elements. Lubrication of the friction area in the start-up phase of the friction pair by mineral oil causes faster stabilization of the friction conditions in the contact area than in the cause of lubrication of the friction pair by synthetic oil. The intensity of wear of the AlSn20 bearing alloy cooperating with the borided surface layer is three times smaller than the intensity of use of the CuPb30 alloy bearing.

Synthesis, crystal structure investigation and magnetism of the complex metal-rich boride series Crx(Rh1-yRuy)7-xB3 (x=0.88-1; y=0-1) with Th7Fe3-type structure

NASA Astrophysics Data System (ADS)

Misse, Patrick R. N.; Mbarki, Mohammed; Fokwa, Boniface P. T.

2012-08-01

Powder samples and single crystals of the new complex boride series Crx(Rh1-yRuy)7-xB3 (x=0.88-1; y=0-1) have been synthesized by arc-melting the elements under purified argon atmosphere on a water-cooled copper crucible. The products, which have metallic luster, were structurally characterized by single-crystal and powder X-ray diffraction as well as EDX measurements. Within the whole solid solution range the hexagonal Th7Fe3 structure type (space group P63mc, no. 186, Z=2) was identified. Single-crystal structure refinement results indicate the presence of chromium at two sites (6c and 2b) of the available three metal Wyckoff sites, with a pronounced preference for the 6c site. An unexpected Rh/Ru site preference was found in the Ru-rich region only, leading to two different magnetic behaviors in the solid solution: The Rh-rich region shows a temperature-independent (Pauli) paramagnetism whereas an additional temperature-dependent paramagnetic component is found in the Ru-rich region.

On the transferability of electron density in binary vanadium borides VB, V3B4 and VB2.

PubMed

Terlan, Bürgehan; Akselrud, Lev; Baranov, Alexey I; Borrmann, Horst; Grin, Yuri

2015-12-01

Binary vanadium borides are suitable model systems for a systematic analysis of the transferability concept in intermetallic compounds due to chemical intergrowth in their crystal structures. In order to underline this structural relationship, topological properties of the electron density in VB, V3B4 and VB2 reconstructed from high-resolution single-crystal X-ray diffraction data as well as derived from quantum chemical calculations, are analysed in terms of Bader's Quantum Theory of Atoms in Molecules [Bader (1990). Atoms in Molecules: A Quantum Theory, 1st ed. Oxford: Clarendon Press]. The compounds VB, V3B4 and VB2 are characterized by a charge transfer from the metal to boron together with two predominant atomic interactions, the shared covalent B-B interactions and the polar covalent B-M interactions. The resembling features of the crystal structures are well reflected by the respective B-B interatomic distances as well as by ρ(r) values at the B-B bond critical points. The latter decrease with an increase in the corresponding interatomic distances. The B-B bonds show transferable electron density properties at bond critical points depending on the respective bond distances.

Vapor pressure and evaporation rate of certain heat-resistant compounds in a vacuum at high temperatures

NASA Technical Reports Server (NTRS)

Bolgar, A. S.; Verkhoglyadova, T. S.; Samsonov, G. V.

1985-01-01

The vapor pressure and evaporation rate of borides of titanium, zirconium, and chrome; and of strontium and carbides of titanium, zirconium, and chrome, molybdenum silicide; and nitrides of titanium, niobium, and tantalum in a vacuum were studied. It is concluded that all subject compounds evaporate by molecular structures except AlB sub 12' which dissociates, losing the aluminum.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Erdemir, Ali; Eryilmaz, Osman Levent; Urgen, Mustafa

A nanocomposite coating and method of making and using the coating. The nanocomposite coating is disposed on a base material, such as a metal or ceramic; and the nanocomposite consists essentially of a matrix of an alloy selected from the group of Cu, Ni, Pd, Pt and Re which are catalytically active for cracking of carbon bonds in oils and greases and a grain structure selected from the group of borides, carbides and nitrides.

LINER FOR EXTRUSION BILLET CONTAINERS

DTIC Science & Technology

Shrink-fit assembly device for buildup of ceramic-coated liner and sleeve assemblies was tested and modified to develop desired temperatures and...preliminary evaluation of suitability for extrusion liner use. Procedures were developed for welding short, hollow ceramic cylinders of high-strength metal...carbides and borides to form a ceramic extrusion liner of suitable length. Disassembly tooling for rapid separation of shrink-fitted sleeves from a worn

Correlation between thermodynamical stabilities of metal borohydrides and cation electronegativites: First-principles calculations and experiments

NASA Astrophysics Data System (ADS)

Nakamori, Yuko; Miwa, Kazutoshi; Ninomiya, Akihito; Li, Haiwen; Ohba, Nobuko; Towata, Shin-Ichi; Züttel, Andreas; Orimo, Shin-Ichi

2006-07-01

The thermodynamical stabilities for the series of metal borohydrides M(BH4)n ( M=Li , Na, K, Cu, Mg, Zn, Sc, Zr, and Hf; n=1-4 ) have been systematically investigated by first-principles calculations. The results indicated that an ionic bonding between Mn+ cations and [BH4]- anions exists in M(BH4)n , and the charge transfer from Mn+ cations to [BH4]- anions is a key feature for the stability of M(BH4)n . A good correlation between the heat of formation ΔHboro of M(BH4)n and the Pauling electronegativity of the cation χP can be found, which is represented by the linear relation, ΔHboro=248.7χP-390.8 in the unit of kJ/mol BH4 . In order to confirm the predicted correlation experimentally, the hydrogen desorption reactions were studied for M(BH4)n ( M=Li , Na, K, Mg, Zn, Sc, Zr, and Hf), where the samples of the later five borohydrides were mechanochemically synthesized. The thermal desorption analyses indicate that LiBH4 , NaBH4 , and KBH4 desorb hydrogen to hydride phases. Mg(BH4)2 , Sc(BH4)3 , and Zr(BH4)4 show multistep desorption reactions through the intermediate phases of hydrides and/or borides. On the other hand, Zn(BH4)2 desorbs hydrogen and borane to elemental Zn due to instabilities of Zn hydride and boride. A correlation between the desorption temperature Td and the Pauling electronegativity χP is observed experimentally and so χP is an indicator to approximately estimate the stability of M(BH4)n . The enthalpy change for the desorption reaction, ΔHdes , is estimated using the predicted ΔHboro and the reported data for decomposed product, ΔHhyd/boride . The estimated ΔHdes show a good correlation with the observed Td , indicating that the predicted stability of borohydride is experimentally supported. These results are useful for exploring M(BH4)n with appropriate stability as hydrogen storage materials.

Complete titanium substitution by boron in a tetragonal prism: exploring the complex boride series Ti(3-x)Ru(5-y)Ir(y)B(2+x) (0 ≤ x ≤ 1 and 1 < y < 3) by experiment and theory.

PubMed

Fokwa, Boniface P T; Hermus, Martin

2011-04-18

Polycrystalline samples and single crystals of four members of the new complex boride series Ti(3-x)Ru(5-y)Ir(y)B(2+x) (0 ≤ x ≤ 1 and 1 < y < 3) were synthesized by arc-melting the elements in a water-cooled copper crucible under an argon atmosphere. The new silvery phases were structurally characterized by powder and single-crystal X-ray diffraction as well as energy- and wavelength-dispersive X-ray spectroscopy analyses. They crystallize with the tetragonal Ti(3)Co(5)B(2) structure type in space group P4/mbm (No. 127). Tetragonal prisms of Ru/Ir atoms are filled with titanium in the boron-poorest phase (Ti(3)Ru(2.9)Ir(2.1)B(2)). Gradual substitution of titanium by boron then results in the successive filling of this site by a Ti/B mixture en route to the complete boron occupation, leading to the boron-richest phase (Ti(2)Ru(2.8)Ir(2.2)B(3)). Furthermore, both ruthenium and iridium share two sites in these structures, but a clear Ru/Ir site preference is found. First-principles density functional theory calculations (Vienna ab initio simulation package) on appropriate structural models (using a supercell approach) have provided more evidence on the stability of the boron-richest and -poorest phases, and the calculated lattice parameters corroborate very well with the experimentally found ones. Linear muffin-tin orbital atomic sphere approximation calculations further supported these findings through crystal orbital Hamilton population bonding analyses, which also show that the Ru/Ir-B and Ru/Ir-Ti heteroatomic interactions are mainly responsible for the structural stability of these compounds. Furthermore, some stable and unstable phases of this complex series could be predicted using the rigid-band model. According to the density of states analyses, all phases should be metallic conductors, as was expected from these metal-rich borides.

Ternary boride product and process

NASA Technical Reports Server (NTRS)

Clougherty, Edward V. (Inventor)

1976-01-01

A hard, tough, strong ceramic body is formed by hot pressing a mixture of a powdered metal and a powdered metal diboride. The metal employed is zirconium, titanium or hafnium and the diboride is the diboride of a different member of the same group of zirconium, titanium or hafnium to form a ternary composition. During hot pressing at temperatures above about 2,000.degree.F., a substantial proportion of acicular ternary monoboride is formed.

Mechanical, Electronic and Optical Properties of Two Phases of NbB4: First-Principles Calculations

NASA Astrophysics Data System (ADS)

Yang, Ruike; Ma, Shaowei; Wei, Qun; Zhang, Dongyun

2018-05-01

As transition metal borides have been successfully synthesised, the study of the combination of transition metal and boron is another effective way to investigate the properties of boride. We have predicted the novel phase Amm2-NbB4. Using the Cambridge Serial Total Energy Package (CASTEP) code, we further researched on the mechanical, electronic and optical properties of C2/c- and Amm2-NbB4. It is found that both the phases of NbB4 are dynamically and mechanically stable at 0 and 100 GPa. Their Vickers hardness values are both 34 GPa, which indicate that they are hard materials. The band gap of C2/c-NbB4 is 0.145 eV, which indicates that it is a semiconductor (or metalloid) at 0 GPa. For the Amm2-NbB4, the band structure without band gap indicates it is a metal at 0 GPa. The optical properties of these two structures are similar. At 0 eV, the real part of dielectric function is 28.8 for C2/c-NbB4, and the real part value for Amm2-NbB4 is 43. We hope our work will provide some help to the experimental work about the technology of the material.

A study of the microstructure of a rapidly solidified nickel-base superalloy modified with boron. M.S. Thesis. Final Contractor Report

NASA Technical Reports Server (NTRS)

Speck, J. S.

1986-01-01

The microstructures of melt-spun superalloy ribbons with variable boron levels have been studied by transmission electron microscopy. The base alloy was of approximate composition Ni-11% Cr-5%Mo-5%Al-4%Ti with boron levels of 0.06, 0.12, and 0.60 percent (all by weight). Thirty micron thick ribbons display an equiaxed chill zone near the wheel contact side which develops into primary dendrite arms in the ribbon center. Secondary dendrite arms are observed near the ribbon free surface. In the higher boron bearing alloys, boride precipitates are observed along grain boundaries. A concerted effort has been made to elucidate true grain shapes by the use of bright field/dark field microscopy. In the low boron alloy, grain shapes are often convex, and grain faces are flat. Boundary faces frequently have large curvature, and grain shapes form concave polygons in the higher boron level alloys. It is proposed that just after solidification, in all of the alloys studied, grain shapes were initially concave and boundaries were wavy. Boundary straightening is presumed to occur on cooling in the low boron alloy. Boundary migration is precluded in the higher boron alloys by fast precipitation of borides at internal interfaces.

Method to produce catalytically active nanocomposite coatings

DOEpatents

Erdemir, Ali; Eryilmaz, Osman Levent; Urgen, Mustafa; Kazmanli, Kursat

2016-02-09

A nanocomposite coating and method of making and using the coating. The nanocomposite coating is disposed on a base material, such as a metal or ceramic; and the nanocomposite consists essentially of a matrix of an alloy selected from the group of Cu, Ni, Pd, Pt and Re which are catalytically active for cracking of carbon bonds in oils and greases and a grain structure selected from the group of borides, carbides and nitrides.

High-Temperature Ceramic Matrix Composite with High Corrosion Resistance

DTIC Science & Technology

2010-06-02

ceramics with silicide additives may be explained in the following ways: 1) metal oxide, for example Ta2O5, formed at oxidation of TaSi2, in the...practically monophase ones, possibly, the additives of corresponding metals in silicide powders were present in insignificant amounts. For...boride with zirconium silicide we prepared the mixtures with 20 vol. % of silicide , the latter being hot pressed in the temperature range of 1600

Computer Modeling of Ceramic Boride Composites

DTIC Science & Technology

2014-11-01

the reinforcer deform elastically, for the theoretical strength of the composite it can be written [46] BBBAAABBAAK EE δεδεσδσδσ +=+= (51) where...coefficients of thermal expansion. Approximately linear expansion coefficient of the composite is determined by the relation [52] EEE BBBAAAk...1 δαδαα ⋅+⋅= , (58) where AE and BE are Young moduli of components, and E – average modulus for composition BBAA EEE δδ

Ground State Structures of Boron-Rich Rhodium Boride: An Ab Initio Study

NASA Astrophysics Data System (ADS)

Chu, Bin-Hua; Zhao, Yuan; Yan, Jin-Liang; Li, Da

2018-01-01

Not Available Supported by the Natural Science Foundation of Shandong Province under Grant Nos ZR2016AP02, ZR2016FM38 and ZR2016EMP01, the Innovation Project of Ludong University under Grant No LB2016013, the Open Project of State Key Laboratory of Superhard Materials of Jilin University under Grant No 201605, and the National Natural Science Foundation of China under Grant Nos 11704170 and 61705097.

Investigation of the thermophysical properties of high-melting materials with the aid of a complex of instruments

NASA Technical Reports Server (NTRS)

Bolgar, A. S.; Gordiyenko, S. P.; Guseva, Y. A.; Turchanin, A. G.; Fenochka, B. V.; Fesenko, V. V.

1984-01-01

The evaporation rate, vapor pressure, heats of evaporation reaction (sublimation, dissociation), enthalpy, electrical resistance, heat capacity, emissivity, and heat conductivity of various carbides, borides, sulfides, nitrides, selenides, and phosphides were investigated. A set of high temperature high vacuum devices, calorimeters (designed for operation at 400 to 1300 K and from 1200 K), and mass spectrometers, most of which were specially developed for these studies, is described.

Feasibility study of the welding of SiC

NASA Technical Reports Server (NTRS)

Moore, T. J.

1985-01-01

In a brief study of the feasibility of welding sintered alpha-SiC, solid-state welding and brazing were investigated. Joint quality was determined solely by microstructural examination. Hot-pressure welding was shown to be feasible at 1950 C. Diffusion welding and brazing were also successful under hot isostatic pressure at 1950 C when boride, carbide, and silicide interlayers were used. Furnace brazing was accomplished at 1750 C when a TiSi2 interlayer was introduced.

Titanium Diboride Electrodeposited Coatings

DTIC Science & Technology

1977-06-01

4 Ti02. This material was deposited in the form of a porous mass or loose particles which must be leached in water and acid to remove adherent...poudres metallique par electrolyse ignee. Revue de Metallurgie, v. 45, 1948, p. 49-59. 7. POWELL, C. F. Borides in High Temperature Materials and... water solution of thallium formate-thallium malonate 50-50 mole percent mixture with a density ranging from about 5 g/cm^ at the bottom to about 2 g/cm

METHOD OF PROTECTING TANTALUM CRUCIBLES AGAINST REACTION WITH MOLTEN URANIUM

DOEpatents

Feder, H.M.; Chellew, N.R.

1960-08-16

Tantalum crucibles against reaction with molten uranium by contacting the surfaces to be protected with metallic boron (as powder, vapor, or suspension in a liquid-volatilenonreacting medium, such as acetone and petroleum oil) at about 1800 deg C in vacuum, discontinuing contact with the boron, and heating the crucibles to a temperature of between 1800 aad 2000 deg C, whereby the tantalum boride formed in the first heating step is converted to tantalum monoboride.

Preliminary investigation of zirconium boride ceramals for gas-turbine blade applications

NASA Technical Reports Server (NTRS)

Hoffman, Charles A

1953-01-01

Zirconium boride ZrB2 ceramals were investigated for possible gas-turbine-blade application. Included in the study were thermal shock evaluations of disks, preliminary turbine-blade operation, and observations of oxidation resistance. Thermal shock disks of the following three compositions were studied: (a) 97.5 percent ZrB2 plus 2.5 percent B by weight; (b) 92.5 percent ZrB2 plus 7.5 percent B by weight; and (c) 100 percent ZrB2. Thermal shock disks were quenched from temperatures of 1800 degrees, 2000 degrees, 2200 degrees, and 2400 degrees F. The life of turbine blades containing 93 percent ZrB2 plus 7 percent B by weight was determined in gas-turbine tests. The blades were run at approximately 1600 degrees F and 15,000 to 26,000 rpm. The thermal shock resistance of the 97.5 percent ZrB2 plus 2.5 percent boron ceramals compares favorably with that of TiC plus Co and TiC plus Ni ceramals. Oxidation of the disks during the thermal shock evaluation was slight for the comparatively short time (8.3 hr) up through 2000 degrees F. Oxidation of a specimen was severe, however, after 100 hours at 2000 degrees F. The turbine blade performance evaluation of the 93 percent ZrB2 plus 7 percent B composition was preliminary in scope ; no conclusions can be drawn.

Probing the superconducting ground state of the rare-earth ternary boride superconductors R RuB2 (R = Lu,Y) using muon-spin rotation and relaxation

NASA Astrophysics Data System (ADS)

Barker, J. A. T.; Singh, R. P.; Hillier, A. D.; Paul, D. McK.

2018-03-01

The superconductivity in the rare-earth transition-metal ternary borides R RuB2 (where R =Lu and Y) has been investigated using muon-spin rotation and relaxation. Measurements made in zero field suggest that time-reversal symmetry is preserved upon entering the superconducting state in both materials; a small difference in depolarization is observed above and below the superconducting transition in both compounds, however, this has been attributed to quasistatic magnetic fluctuations. Transverse-field measurements of the flux-line lattice indicate that the superconductivity in both materials is fully gapped, with a conventional s -wave pairing symmetry and BCS-like magnitudes for the zero-temperature gap energies. The electronic properties of the charge carriers in the superconducting state have been calculated, with effective masses m*/me=9.8 ±0.1 and 15.0 ±0.1 in the Lu and Y compounds, respectively, with superconducting carrier densities ns=(2.73 ±0.04 ) ×1028m-3 and (2.17 ±0.02 ) ×1028m-3 . The materials have been classified according to the Uemura scheme for superconductivity, with values for Tc/TF of 1 /(414 ±6 ) and 1 /(304 ±3 ) , implying that the superconductivity may not be entirely conventional in nature.

Method of making a light weight battery plaque

NASA Technical Reports Server (NTRS)

Reid, M. A.; Post, R. E.; Soltis, D. G. (Inventor)

1984-01-01

A nickel plaque which may be coated with a suitable metal or compound to make an electrode for a fuel cell or battery is fabricated by directing nickel sensitizer, catalyst and plating solutions through a porous plastic substrate in the order named and at prescribed temperatures and flow rates. A boride compound dissolved in the plating solution decreases the electrical resistance of the plaque. Certain substrates may require treatment in an alkali solution to dissolve filler materials thereby increasing porosity to a required 65%.

Development of a method for fabricating metallic matrix composite shapes by a continuous mechanical process

NASA Technical Reports Server (NTRS)

Divecha, A. P.

1974-01-01

Attempts made to develop processes capable of producing metal composites in structural shapes and sizes suitable for space applications are described. The processes must be continuous and promise to lower fabrication costs. Special attention was given to the aluminum boride (Al/b) composite system. Results show that despite adequate temperature control, the consolidation characteristics did not improve as expected. Inadequate binder removal was identified as the cause responsible. An Al/c (aluminum-graphite) composite was also examined.

Identification of thermodynamically stable ceramic reinforcement materials for iron aluminide matrices

NASA Technical Reports Server (NTRS)

Misra, Ajay K.

1990-01-01

Aluminide-base intermetallic matrix composites are currently being considered as potential high-temperature materials. One of the key factors in the selection of a reinforcement material is its chemical stability in the matrix. In this study, chemical interactions between iron aluminides and several potential reinforcement materials, which include carbides, oxides, borides, and nitrides, are analyzed from thermodynamic considerations. Several chemically compatible reinforcement materials are identified for the iron aluminides with Al concentrations ranging from 40 to 50 at. pct.

The Physics and Chemistry of carbides, Nitrides and Borides. Volume 185

DTIC Science & Technology

1990-01-01

and C-B-C chains [15,17]. Clearly, the use of boron-rich solids as electronic materials will place new demands on the quality of materials. In this...first heated in a pyrolytic boron nitride (PBN) crucible ( Union Carbide Corp.) under high vacuum (< 50 mTorr) to 1900°C. This removed surface...contamination of the sample. The powders were loaded into a graphite die with a high-purity BN die liner ( Union Carbide Grade HBC) with inner diameter of 3/8

Anti-scratch AlMgB14 Gorilla® Glass coating

NASA Astrophysics Data System (ADS)

Putrolaynen, V. V.; Grishin, A. M.; Rigoev, I. V.

2017-10-01

Hard aluminum-magnesium boride (BAM) films were fabricated onto Corning® Gorilla® Glass by radio-frequency magnetron sputtering of a single stoichiometric AlMgB14 target. BAM films exhibit a Vickers hardness from 10 to 30 GPa and a Young's modulus from 80 to 160 GPa depending on applied loading forces. Deposited hard coating increases the critical load at which glass substrate cracks. The adhesion energy of BAM films on Gorilla® Glass is 6.4 J/m2.

Synthesis and properties of nickel cobalt boron nanoparticles

NASA Astrophysics Data System (ADS)

Patel, J.; Pankhurst, Q. A.; Parkin, I. P.

2005-01-01

Amorphous cobalt nickel boride nanoparticles were synthesised by chemical reduction synthesis in aqueous solution. Careful control of synthesis conditions and post reaction oxidation enabled the nanoparticles to be converted into a core-shell structure comprising of an amorphous Co-Ni-B core and an outer metal oxide sheet. These particles had interesting magnetic properties including saturation magnetisations and coercivities of the order of 80 emu/g and 170 Oe respectively, making them suitable for a potential use as an exchange-pinned magnetic material.

Features of surface phase formation during case-hardening of iron- and titanium-based alloys

NASA Astrophysics Data System (ADS)

Vintaikin, B. E.; Kamynin, A. V.; Kraposhin, V. S.; Smirnov, A. E.; Terezanova, K. V.; Cherenkova, S. A.; Sheykina, V. I.

2017-11-01

The article provides a detailed analysis of formation features for surface phases in technical iron and Cr20-Ni80 alloy samples that undergo case-hardening at a temperature of 850°C for 2, 4 and 6 hours of saturation in two different environments: acetylene, and molten salt consisting of sodium tetraborate and amorphous boron. We carried out an X-ray phase analysis to determine the phase structure of surface material layers that formed as a result of the case-hardening process. We discovered that after carburising it was possible to detect Fe3C and Fe-α phases on the surface of technical iron samples, and after boriding we found FeB, Fe2B and Fe3B phases; we noted a lack of characteristic Fe-α and Fe-γ peaks on the X-ray diffraction pattern. We detected many different phases in the Cr20-Ni80 alloy after the same type of case-hardening. Titanium oxides appeared after case-hardening of titanium in air at 800°C. We provide data on surface structure of samples subjected to vacuum carburising: over a 2 to 6 hour interval, the layer thickness is a parabolic function of time. When carrying out electrolysis-free liquid boriding, increasing exposure time from 2 to 6 hours alters the thickness of the strengthened layer only slightly, so, when carrying out case-hardening, it is less efficient to increase saturation time in molten salt containing sodium tetraborate and amorphous boron.

Method For Synthesizing Extremely High-Temperature Melting Materials

DOEpatents

Saboungi, Marie-Louise; Glorieux, Benoit

2005-11-22

The invention relates to a method of synthesizing high-temperature melting materials. More specifically the invention relates to a containerless method of synthesizing very high temperature melting materials such as borides, carbides and transition-metal, lanthanide and actinide oxides, using an Aerodynamic Levitator and a laser. The object of the invention is to provide a method for synthesizing extremely high-temperature melting materials that are otherwise difficult to produce, without the use of containers, allowing the manipulation of the phase (amorphous/crystalline/metastable) and permitting changes of the environment such as different gaseous compositions.

Preparation of actinide boride materials via solid-state metathesis reactions and actinide dicarbollide precursors

NASA Astrophysics Data System (ADS)

Lupinetti, Anthony J.; Fife, Julie; Garcia, Eduardo; Abney, Kent D.

2000-07-01

Information gaps exist in the knowledge base needed for choosing among the alternate processes to be used in the safe conversion of fissile materials to optimal forms for safe interim storage, long-term storage, and ultimate disposition. The current baseline storage technology for various wastes uses borosilicate glasses.1 The focus of this paper is the synthesis of actinide-containing ceramic materials at low and moderate temperatures (200 °C-1000 °C) using molecular and polymeric actinide borane and carborane complexes.

Corrosion of Ceramic Materials

NASA Technical Reports Server (NTRS)

Opila, Elizabeth J.; Jacobson, Nathan S.

1999-01-01

Non-oxide ceramics are promising materials for a range of high temperature applications. Selected current and future applications are listed. In all such applications, the ceramics are exposed to high temperature gases. Therefore it is critical to understand the response of these materials to their environment. The variables to be considered here include both the type of ceramic and the environment to which it is exposed. Non-oxide ceramics include borides, nitrides, and carbides. Most high temperature corrosion environments contain oxygen and hence the emphasis of this chapter will be on oxidation processes.

Reactive multilayer synthesis of hard ceramic foils and films

DOEpatents

Makowiecki, Daniel M.; Holt, Joseph B.

1996-01-01

A method for synthesizing hard ceramic materials such as carbides, borides nd aluminides, particularly in the form of coatings provided on another material so as to improve the wear and abrasion performance of machine tools, for example. The method involves the sputter deposition of alternating layers of reactive metals with layers of carbon, boron, or aluminum and the subsequent reaction of the multilayered structure to produce a dense crystalline ceramic. The material can be coated on a substrate or formed as a foil which can be coild as a tape for later use.

High temperature solar energy absorbing surfaces

DOEpatents

Schreyer, J.M.; Schmitt, C.R.; Abbatiello, L.A.

A solar collector having an improved coating is provided. The coating is a plasma-sprayed coating comprising a material having a melting point above 500/sup 0/C at which it is stable and selected from the group of boron carbide, boron nitride, metals and metal oxides, nitrides, carbides, borides, and silicates. The coatings preferably have a porosity of about 15 to 25% and a thickness of less than 200 micrometers. The coatings can be provided by plasma-spraying particles having a mean diameter of about 10 to 200 micrometers.

Fundamental Thermal and Mechanical Properties of Boride Ceramics

DTIC Science & Technology

2014-02-28

Zr ,Y)B2 ( Zr ,Hf)B2 ( Zr ,Ti)B2 ZrB2 El ec tri ca l R es is tiv ity (µ Ω -c m ) Temperature (°C) Figure 17. Electrical resistivity as a function...family as Zr , namely Ti and Hf, had minimal effect on thermal conductivity, while others such as Nb , Ta, and W had an increasing impact based on their...diffusivity (α), heat capacity (Cp) from the NIST-JANAF tables, and bulk density (ρ) using Equation 6. (5) (6) Electrical resistivity

Method for Synthesizing Extremeley High Temperature Melting Materials

DOEpatents

Saboungi, Marie-Louise and Glorieux, Benoit

2005-11-22

The invention relates to a method of synthesizing high-temperature melting materials. More specifically the invention relates to a containerless method of synthesizing very high temperature melting materials such as borides, carbides and transition-metal, lanthanide and actinide oxides, using an Aerodynamic Levitator and a laser. The object of the invention is to provide a method for synthesizing extremely high-temperature melting materials that are otherwise difficult to produce, without the use of containers, allowing the manipulation of the phase (amorphous/crystalline/metastable) and permitting changes of the environment such as different gaseous compositions.

Thermodynamic analysis of chemical compatibility of several reinforcement materials with niobium aluminides

NASA Technical Reports Server (NTRS)

Misra, Ajay K.

1989-01-01

Chemical compatibility of several reinforcement materials with three niobium aluminides, Nb3Al, Nb2Al, and NbAl3, were examined from thermodynamic considerations. The reinforcement materials considered in this study include carbides, borides, nitrides, oxides, silicides, and Engel-Brewer compounds. Thermodynamics of the Nb-Al system were reviewed and activities of Nb and Al were derived at desired calculation temperatures. Criteria for chemical compatibility between the reinforcement material and Nb-Al compounds have been defined and several chemically compatible reinforcement materials have been identified.

Ultra-hard AlMgB14 coatings fabricated by RF magnetron sputtering from a stoichiometric target

NASA Astrophysics Data System (ADS)

Grishin, A. M.; Khartsev, S. I.; Böhlmark, J.; Ahlgren, M.

2015-01-01

For the first time hard aluminum magnesium boride films were fabricated by RF magnetron sputtering from a single stoichiometric ceramic AlMgB14 target. Optimized processing conditions (substrate temperature, target sputtering power and target-to-substrate distance) enable fabrication of stoichiometric in-depth compositionally homogeneous films with the peak values of nanohardness 88 GPa and Young's modulus 517 GPa at the penetration depth of 26 nm and, respectively, 35 and 275 GPa at 200 nm depth in 2 μm thick film.

Foreword

NASA Astrophysics Data System (ADS)

Manghnani, Murli H.

2015-09-01

The 18th International Symposium on Boron, Borides and Related Materials was held in Hawaii Prince Hotel Waikiki, Honolulu, Hawaii, USA on August 31 to September 5, 2014 (ISBB 2014). A booklet of the Program and Abstracts prepared for the Symposium served as an important record of the scientific papers presented as oral paper (68) and as posters (53). The wide range of contributions in various areas of inter-disciplinary research in boron-related materials, and the discussions during the sessions, demonstrated impressive advancements and offer many future opportunities for individual as well as collaborative endeavors globally.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Hossain, M. Anwar; Center for Crystal Science and Technology, University of Yamanashi, Miyamae 7-32, Kofu, Yamanashi 400-8511; Tanaka, Isao

We studied thermoelectric properties of YB{sub 41}Si{sub 1.3} single crystals grown by the floating zone method. The composition of the grown crystal was confirmed by electron probe micro-analysis. We have determined the growth direction for the first time for these borosilicides, and discovered relatively large anisotropy in electrical properties. We measured the electrical resistivity and Seebeck coefficient along [510] (the growth direction) and [052] directions and we found that this crystal exhibits strong electrical anisotropy with a maximum of more than 8 times. An interesting layered structural feature is revealed along [510] with dense boron cluster layers and yttrium layers,more » with conductivity enhanced along this direction. We obtained 3.6 times higher power factor along [510] compared to that along [052]. Although the ZT of the present system is low, anisotropy in the thermoelectric properties of a boride was reported for the first time, and can be a clue in developing other boride systems also. - Graphical abstract: The growth direction ([510]) was determined for the first time in YB{sub 41}Si{sub 1.3} single crystals and revealed an interesting layered feature of boron clusters and metal atoms, along which the electrical conductivity and thermoelectric power factor was strongly enhanced. - Highlights: • We have grown YB{sub 41}Si{sub 1.3} single crystals by the floating zone method. • Growth direction of [510] determined for first time in REB{sub 41}Si{sub 1.2}. • Electrical resistivity was strongly anisotropic with possible enhancement along metal layers. • The obtained power factor along [510] is 3.6 times higher than that along [052].« less

Boron oxynitride nanoclusters on tungsten trioxide as a metal-free cocatalyst for photocatalytic oxygen evolution from water splitting

NASA Astrophysics Data System (ADS)

Xie, Ying Peng; Liu, Gang; Lu, Gao Qing (Max); Cheng, Hui-Ming

2012-02-01

Here we show that B2O3-xNx nanoclusters can be formed on the surface of WO3 particles by a combination of thermal oxidation of tungsten boride (WB) in air and the subsequent nitriding process in gaseous ammonia. The resultant nanoclusters are found to play an apparent role in improving the photocatalytic oxygen evolution of WO3 by promoting the surface separation of photoexcited charge-carriers.Here we show that B2O3-xNx nanoclusters can be formed on the surface of WO3 particles by a combination of thermal oxidation of tungsten boride (WB) in air and the subsequent nitriding process in gaseous ammonia. The resultant nanoclusters are found to play an apparent role in improving the photocatalytic oxygen evolution of WO3 by promoting the surface separation of photoexcited charge-carriers. Electronic supplementary information (ESI) available: (1) Experimental section. (2) XRD patterns, FT-IR and Raman spectra of B2O3@WO3 and B2O3-xNx@WO3. (3) Time course of O2 evolution from water splitting using B2O3@WO3 and B2O3-xNx@WO3. (4) XRD pattern and SEM image of pure WO3, UV-visible absorption spectra of pure WO3 and N-WO3. (5) UV-visible absorption spectra of bulk B2O3 and schematic of band edges of WO3, bulk B2O3, and B2O3-xNx nanocluster. See DOI: 10.1039/c2nr11846g

Processing development of 4 tantalum carbide-hafnium carbide and related carbides and borides for extreme environments

NASA Astrophysics Data System (ADS)

Gaballa, Osama Gaballa Bahig

Carbides, nitrides, and borides ceramics are of interest for many applications because of their high melting temperatures and good mechanical properties. Wear-resistant coatings are among the most important applications for these materials. Materials with high wear resistance and high melting temperatures have the potential to produce coatings that resist degradation when subjected to high temperatures and high contact stresses. Among the carbides, Al4SiC4 is a low density (3.03 g/cm3), high melting temperature (>2000°C) compound, characterized by superior oxidation resistance, and high compressive strength. These desirable properties motivated this investigation to (1) obtain high-density Al4SiC4 at lower sintering temperatures by hot pressing, and (2) to enhance its mechanical properties by adding WC and TiC to the Al4SiC4. Also among the carbides, tantalum carbide and hafnium carbide have outstanding hardness; high melting points (3880°C and 3890°C respectively); good resistance to chemical attack, thermal shock, and oxidation; and excellent electronic conductivity. Tantalum hafnium carbide (Ta4HfC 5) is a 4-to-1 ratio of TaC to HfC with an extremely high melting point of 4215 K (3942°C), which is the highest melting point of all currently known compounds. Due to the properties of these carbides, they are considered candidates for extremely high-temperature applications such as rocket nozzles and scramjet components, where the operating temperatures can exceed 3000°C. Sintering bulk components comprised of these carbides is difficult, since sintering typically occurs above 50% of the melting point. Thus, Ta4 HfC5 is difficult to sinter in conventional furnaces or hot presses; furnaces designed for very high temperatures are expensive to purchase and operate. Our research attempted to sinter Ta4HfC5 in a hot press at relatively low temperature by reducing powder particle size and optimizing the powder-handling atmosphere, milling conditions, sintering temperature, and hot-pressing pressure. Also, WC additions to Ta4HfC5 were found to improve densification and increase microhardness. The ability to process these materials at relatively low temperature would save energy and reduce cost. Boron-based hard materials are used in numerous applications such as industrial machining, armor plating, and wear-resistant coatings. It was often thought that in addition to strong bonding, super-hard materials must also possess simple crystallographic unit cells with high symmetry and a minimum number of crystal defects (e.g., diamond and cubic boron nitride (cBN)). However, one ternary boride, AlMgB14, deviates from this paradigm; AlMgB 14 has a large, orthorhombic unit cell (oI64) with multiple icosahedral boron units. TiB2 has been shown to be an effective reinforcing phase in AlMgB 14, raising hardness, wear resistance, and corrosion resistance. Thus, it was thought that adding other, similar phases (i.e., ZrB2 and HfB2) to AlMgB14 could lead to useful improvements in properties vis-à-vis pure AlMgB14. Group IV metal diborides (XB2, where X = Ti, Zr, or Hf) are hard, ultra-high temperature ceramics. These compounds have a primitive hexagonal crystal structure (hP3) with planes of graphite-like boride rings above and below planes of metal atoms. Unlike graphite, there is strong bonding between the planes, resulting in high hardness. For this study two-phase composites of 60 vol. % metal diborides with 40 vol. % AlMgB14 were produced and characterized.

How to estimate hardness of crystals on a pocket calculator

NASA Astrophysics Data System (ADS)

Šimůnek, Antonín

2007-05-01

A generalization of the semiempirical microscopic model of hardness is presented and applied to currently studied borides, carbides, and nitrides of heavy transition metals. The hardness of OsB, OsC, OsN, PtN, RuC, RuB2 , ReB2 , OsB2 , IrN2 , PtN2 , and OsN2 crystals in various structural phases is predicted. It is found that none of the transition metal crystals is superhard, i.e., with hardness greater than 40GPa . The presented method provides materials researchers with a practical tool in the search for new hard materials.

First-principles modeling of hardness in transition-metal diborides

NASA Astrophysics Data System (ADS)

Lazar, Petr; Chen, Xing-Qiu; Podloucky, Raimund

2009-07-01

Based on recent experiments, the diborides OsB2 and ReB2 were proposed to be ultraincompressible and superhard materials. By application of an ab initio density-functional theory approach we investigate the elastic and cleavage fracture properties of the borides MB2 ( M=Hf , Ta, W, Re, Os, and Ir). We derive a direct correlation between the lowest calculated critical cleavage stress and the experimental (micro)hardness. By calculating the critical shear stress and estimating the possibility of dislocation emission we can justify the prediction that ReB2 is indeed a superhard material.

Reactive multilayer synthesis of hard ceramic foils and films

DOEpatents

Makowiecki, D.M.; Holt, J.B.

1996-02-13

A method is disclosed for synthesizing hard ceramic materials such as carbides, borides and aluminides, particularly in the form of coatings provided on another material so as to improve the wear and abrasion performance of machine tools, for example. The method involves the sputter deposition of alternating layers of reactive metals with layers of carbon, boron, or aluminum and the subsequent reaction of the multilayered structure to produce a dense crystalline ceramic. The material can be coated on a substrate or formed as a foil which can be coiled as a tape for later use.

Thermodynamic analysis of chemical compatibility of several compounds with Fe-Cr-Al alloys

NASA Technical Reports Server (NTRS)

Misra, Ajay K.

1993-01-01

Chemical compatibility between Fe-19.8Cr-4.8Al (weight percent), which is the base composition for the commercial superalloy MA956, and several carbides, borides, nitrides, oxides, and silicides was analyzed from thermodynamic considerations. The effect of addition of minor alloying elements, such as Ti, Y, and Y2O3, to the Fe-Cr-Al alloy on chemical compatibility between the alloy and various compounds was also analyzed. Several chemically compatible compounds that can be potential reinforcement materials and/or interface coating materials for Fe-Cr-Al based composites were identified.

Lightweight porous plastic plaque. [nickel cadmium batteries

NASA Technical Reports Server (NTRS)

Reid, M.

1978-01-01

The porosity and platability of various materials were investigated to determine a suitable substrate for nickel-plated electrodes. Immersion, ultrasonics, and flow-through plating techniques were tried using nonproprietary formulations, and proprietary phosphide and boride baths. Modifications to the selected material include variations in formulation and treatment, carbon loading to increase conductivity, and the incorporation of a grid. Problems to be solved relate to determining conductivities and porosities as a function of amount of nickel plated on the plastics; loading; charge and discharge curves of electrodes at different current densities; cell performance; and long-term degradation of electrodes.

In-situ Formation of Reinforcement Phases in Ultra High Temperature Ceramic Composites

NASA Technical Reports Server (NTRS)

Stackpoole, Margaret M (Inventor); Gasch, Matthew J (Inventor); Olson, Michael W (Inventor); Hamby, Ian W. (Inventor); Johnson, Sylvia M (Inventor)

2013-01-01

A tough ultra-high temperature ceramic (UHTC) composite comprises grains of UHTC matrix material, such as HfB.sub.2, ZrB.sub.2 or other metal boride, carbide, nitride, etc., surrounded by a uniform distribution of acicular high aspect ratio reinforcement ceramic rods or whiskers, such as of SiC, is formed from uniformly mixing a powder of the UHTC material and a pre-ceramic polymer selected to form the desired reinforcement species, then thermally consolidating the mixture by hot pressing. The acicular reinforcement rods may make up from 5 to 30 vol % of the resulting microstructure.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Mbarki, Mohammed; Touzani, Rachid St.; Rehorn, Christian W.G.

The new ternary transition metal-rich borides Ta{sub 2}OsB{sub 2} and TaRuB have been successfully synthesized by arc-melting the elements in a water-cooled crucible under an argon atmosphere. The crystal structures of both compounds were solved by single-crystal X-ray diffraction and their metal compositions were confirmed by EDX analysis. It was found that Ta{sub 2}OsB{sub 2} and TaRuB crystallize in the tetragonal Nb{sub 2}OsB{sub 2} (space group P4/mnc, no. 128) and the orthorhombic NbRuB (space group Pmma, no. 51) structure types with lattice parameters a=5.878(2) Å, c=6.857(2) Å and a=10.806(2) Å, b=3.196(1) Å, c=6.312(2) Å, respectively. Furthermore, crystallographic, electronic and bondingmore » characteristics have been studied by density functional theory (DFT). Electronic structure relaxation has confirmed the crystallographic parameters while COHP bonding analysis indicates that B{sub 2}-dummbells are the strongest bonds in both compounds. Moreover, the formation of osmium dumbbells in Ta{sub 2}OsB{sub 2} through a Peierls distortion along the c-axis, is found to be the origin of superstructure formation. Magnetic susceptibility measurements reveal that the two phases are Pauli paramagnets, thus confirming the theoretical DOS prediction of metallic character. Also hints of superconductivity are found in the two phases, however lack of single phase samples has prevented confirmation. Furthermore, the thermodynamic stability of the two modifications of AMB (A=Nb, Ta; M =Ru, Os) are studied using DFT, as new possible phases containing either B{sub 4}- or B{sub 2}-units are predicted, the former being the most thermodynamically stable modification. - Graphical abstract: The two new ternary tantalum borides, Ta{sub 2}OsB{sub 2} and TaRuB, have been discovered. Their crystal structures contain boron dumbbells, which are the strongest bonds. Peirls distortion is found responsible for Os{sub 2}-dumbbells formation in Ta{sub 2}OsB{sub 2}. Ta{sub 2}OsB{sub 2} and TaRuB are Pauli paramagnet and potential superconductors. - Highlights: • Two new ternary tantalum borides, Ta{sub 2}OsB{sub 2} and TaRuB, discovered. • Boron dumbbells are the strongest bonds in Ta{sub 2}OsB{sub 2} and TaRuB. • Peierls distortion responsible for Os{sub 2}-dumbbells formation in Ta{sub 2}OsB{sub 2.} • Ta{sub 2}OsB{sub 2} and TaRuB are Pauli paramagnet. • Ta{sub 2}OsB{sub 2} and TaRuB contain pseudogaps and are potential superconductors.« less

Rheological principles of development hetero-modulus and hetero-viscous complex materials with extreme dynamic strength

NASA Astrophysics Data System (ADS)

Gömze, L. A.; Gömze, L. N.

2017-02-01

Materials with different crystalline and morphological compositions have different chemical, physical, mechanical and rheological properties, including wear protection, melting temperature, module of elasticity and viscosity. Examining the material structures and behaviors of differentceramic bodies and CMCs under high speed collisions in several years the authors have understood the advantages of hetero-modulus and hetero-viscous complex material systems to absorb and dissipate the kinetic energy of objects during high speed collisions. Applying the rheo-mechanical principles the authors successfully developed a new family of hetero-modulus and hetero-viscous alumina matrix composite materials with extreme mechanical properties including dynamic strength. These new corundum-matrix composite materials reinforced with Si2ON 2, Si3N4 , SiAlON and AlN submicron and nanoparticles have excellent dynamic strength during collisions with high density metallic bodies with speeds about 1000 m/sec or more. At the same time in the alumina matrix composites can be observed a phase transformation of submicron and nanoparticles of alpha and beta silicone-nitride crystals into cubicc-Si3N4 diamond-like particles can be observed, when the high speed collision processes are taken place in vacuum or oxygen-free atmosphere. Using the rheological principles and the energy engorgement by fractures, heating and melting of components the authors successfully developed several new hetero-modulus, hetero-viscous and hetero-plastic complex materials. These materials generally are based on ceramic matrixes and components having different melting temperatures and modules of elasticity from low values like carbon and light metals (Mg, Al, Ti, Si) up to very high values like boride, nitride and carbide ceramics. Analytical methods applied in this research were scanning electron microscopy, X-ray diffractions and energy dispersive spectrometry. Digital image analysis was applied to microscopy results to enhance the results of transformations.

New ternary tantalum borides containing boron dumbbells: Experimental and theoretical studies of Ta2OsB2 and TaRuB

NASA Astrophysics Data System (ADS)

Mbarki, Mohammed; Touzani, Rachid St.; Rehorn, Christian W. G.; Gladisch, Fabian C.; Fokwa, Boniface P. T.

2016-10-01

The new ternary transition metal-rich borides Ta2OsB2 and TaRuB have been successfully synthesized by arc-melting the elements in a water-cooled crucible under an argon atmosphere. The crystal structures of both compounds were solved by single-crystal X-ray diffraction and their metal compositions were confirmed by EDX analysis. It was found that Ta2OsB2 and TaRuB crystallize in the tetragonal Nb2OsB2 (space group P4/mnc, no. 128) and the orthorhombic NbRuB (space group Pmma, no. 51) structure types with lattice parameters a=5.878(2) Å, c=6.857(2) Å and a=10.806(2) Å, b=3.196(1) Å, c=6.312(2) Å, respectively. Furthermore, crystallographic, electronic and bonding characteristics have been studied by density functional theory (DFT). Electronic structure relaxation has confirmed the crystallographic parameters while COHP bonding analysis indicates that B2-dummbells are the strongest bonds in both compounds. Moreover, the formation of osmium dumbbells in Ta2OsB2 through a Peierls distortion along the c-axis, is found to be the origin of superstructure formation. Magnetic susceptibility measurements reveal that the two phases are Pauli paramagnets, thus confirming the theoretical DOS prediction of metallic character. Also hints of superconductivity are found in the two phases, however lack of single phase samples has prevented confirmation. Furthermore, the thermodynamic stability of the two modifications of AMB (A=Nb, Ta; M =Ru, Os) are studied using DFT, as new possible phases containing either B4- or B2-units are predicted, the former being the most thermodynamically stable modification.

The complex metal-rich boride Ti1+xRh2-x+yIr3-yB3 (x=0.68, y=1.06) with a new structure type containing B4 zigzag fragments: Synthesis, crystal chemistry and theoretical calculations

NASA Astrophysics Data System (ADS)

Goerens, Christian; Fokwa, Boniface P. T.

2012-08-01

Polycrystalline samples and single crystals of the new complex boride Ti1+xRh2-x+yIr3-yB3 (x=0.68; y=1.06) were synthesized by arc-melting the elements in a water-cooled copper crucible under an argon atmosphere and characterized by X-Ray diffraction as well as EDX measurements. The crystal structure was refined on the basis of single crystal data. The new phase, which represents a new structure type containing trans zigzag B4 fragments as well as isolated boron atoms crystallizes in the orthorhombic space group Pbam (Nr. 55) with the lattice parameters a=8.620(1) Å, b=14.995(2) Å and c=3.234(1) Å. First-principles density functional theory calculations using the Vienna ab-initio simulation package (VASP) were performed on an appropriate structural model (using a supercell approach) and the experimental crystallographic data could be reproduced accurately. Based on this model, the density of states and crystal orbital Hamilton population (for bonding analysis) were calculated, using the linear muffin-tin orbital atomic sphere approximation (LMTO-ASA) method. According to these calculations, this metal-rich compound should be metallic, as expected. Furthermore, very strong boron-boron interactions are observed in the trans zigzag B4 fragment, which induce a clear differentiation of two types of metal-boron contacts with different strength. The observed three-dimensional metal-metal interaction is in good agreement with the predicted metallic behavior.

Three-dimensional nanometer scale analyses of precipitate structures and local compositions in titanium aluminide engineering alloys

NASA Astrophysics Data System (ADS)

Gerstl, Stephan S. A.

Titanium aluminide (TiAl) alloys are among the fastest developing class of materials for use in high temperature structural applications. Their low density and high strength make them excellent candidates for both engine and airframe applications. Creep properties of TiAl alloys, however, have been a limiting factor in applying the material to a larger commercial market. In this research, nanometer scale compositional and structural analyses of several TiAl alloys, ranging from model Ti-Al-C ternary alloys to putative commercial alloys with 10 components are investigated utilizing three dimensional atom probe (3DAP) and transmission electron microscopies. Nanometer sized borides, silicides, and carbide precipitates are involved in strengthening TiAl alloys, however, chemical partitioning measurements reveal oxygen concentrations up to 14 at. % within the precipitate phases, resulting in the realization of oxycarbide formation contributing to the precipitation strengthening of TiAl alloys. The local compositions of lamellar microstructures and a variety of precipitates in the TiAl system, including boride, silicide, binary carbides, and intermetallic carbides are investigated. Chemical partitioning of the microalloying elements between the alpha2/gamma lamellar phases, and the precipitate/gamma-matrix phases are determined. Both W and Hf have been shown to exhibit a near interfacial excess of 0.26 and 0.35 atoms nm-2 respectively within ca. 7 nm of lamellar interfaces in a complex TiAl alloy. In the case of needle-shaped perovskite Ti3AlC carbide precipitates, periodic domain boundaries are observed 5.3+/-0.8 nm apart along their growth axis parallel to the TiAl[001] crystallographic direction with concomitant composition variations after 24 hrs. at 800°C.

Thermodynamic Analysis of Compatibility of Several Reinforcement Materials with Beta Phase NiAl Alloys

NASA Technical Reports Server (NTRS)

Misra, Ajay K.

1988-01-01

Chemical compatibility of several reinforcement materials with beta phase NiAl alloys within the concentration range 40 to 50 at. percent Al have been analyzed from thermodynamic considerations at 1373 and 1573 K. The reinforcement materials considered in this study include carbides, borides, oxides, nitrides, beryllides, and silicides. Thermodynamic data for NiAl alloys have been reviewed and activity of Ni and Al in the beta phase have been derived at 1373 and 1573 K. Criteria for chemical compatibility between the reinforcement material and the matrix have been defined and several chemically compatible reinforcement materials have been defined.

Material comprising two different non-metallic parrticles having different particle sizes for use in solar reactor

DOE Office of Scientific and Technical Information (OSTI.GOV)

Klausner, James F.; Momen, Ayyoub Mehdizadeh; Al-Raqom, Fotouh A.

Disclosed herein is a composite particle comprising a first non-metallic particle in which is dispersed a second non-metallic particle, where the first non-metallic particle and the second non-metallic particle are inorganic; and where a chemical composition of the first non-metallic particle is different from a chemical composition of the second non-metallic particle; and where the first non-metallic particle and the second non-metallic particle are metal oxides, metal carbides, metal nitrides, metal borides, metal silicides, metal oxycarbides, metal oxynitrides, metal boronitrides, metal carbonitrides, metal borocarbides, or a combination thereof.

First principle study of UHTC ternary diboride, Cr2AlB2

NASA Astrophysics Data System (ADS)

Rastogi, Anugya; Rajpoot, Priyanka; Verma, U. P.

2018-04-01

In this paper ab-initio study of the structural, electronic and optical properties of ternary metal boride Cr2AlB2 using full potential linear augmented plane wave (FP-LAPW) method based on the density functional theory (DFT). The study of structural properties shows that Cr2AlB2 is metallic in nature and have orthorhombic crystal structure. The optical properties show that it possess anisotropic behavior, which have wide applications in electricity production through concentration of solar power (CSP) technology. To the best of our knowledge, theoretical study of the optical properties of Cr2AlB2 is reported for the first time.

Modeling the mechanical behavior of ceramic and heterophase structures manufactured using selective laser sintering and spark plasma sintering

NASA Astrophysics Data System (ADS)

Skripnyak, Vladimir A.; Skripnyak, Evgeniya G.; Skripnyak, Vladimir V.; Vaganova, Irina K.

A model for predicting mechanical properties of ultra-high temperature ceramics and composites manufactured by selective laser sintering (SLS) and spark plasma sintering (SPS) under shock loading is presented. The model takes into account the porous structure, the specific volume and average sizes of phases, and the temperature of sintering. Residual stresses in ceramic composites reinforced with particles of refractory borides, carbides and nitrides after SLS or SPS were calculated. It is shown that the spall strength of diboride-zirconium matrix composites can be increased by the decreasing of porosity and the introduction of inclusions of specially selected refractory strengthening phases.

Numerical and experimental study of electron-beam coatings with modifying particles FeB and FeTi

NASA Astrophysics Data System (ADS)

Kryukova, Olga; Kolesnikova, Kseniya; Gal'chenko, Nina

2016-07-01

An experimental study of wear-resistant composite coatings based on titanium borides synthesized in the process of electron-beam welding of components thermo-reacting powders are composed of boron-containing mixture. A model of the process of electron beam coating with modifying particles of boron and titanium based on physical-chemical transformations is supposed. The dissolution process is described on the basis of formal kinetic approach. The result of numerical solution is the phase and chemical composition of the coating under nonequilibrium conditions, which is one of the important characteristics of the coating forming during electron beam processing. Qualitative agreement numerical calculations with experimental data was shown.

A new superhard material: Osmium diboride OsB 2

NASA Astrophysics Data System (ADS)

Hebbache, M.; Stuparević, L.; Živković, D.

2006-08-01

Superhard materials have many industrial applications, wherever resistance to abrasion and wear are important. The synthesis of new superhard materials is one of the great challenges to scientists. We re-examined the phase diagram of the binary osmium-boron system and confirmed the existence of two hexagonal phases, OsB 1.1, Os 2B 3, and an orthorhombic phase, OsB 2. Almost nothing is known about the physical properties of osmium borides. Microhardness measurements show that OsB 2 is extremely hard. Ab initio calculations show that this is due to formation of covalent bonds between boron atoms. OsB 2 is also a low compressibility material. It can be used as hard coating.

First-principles study of low compressibility osmium borides

NASA Astrophysics Data System (ADS)

Gou, Huiyang; Hou, Li; Zhang, Jingwu; Li, Hui; Sun, Guifang; Gao, Faming

2006-05-01

Using first-principles total energy calculations we investigate the structural, elastic, and electronic properties of OsB2 and OsB, respectively. The calculated equilibrium structural parameters of OsB2 are in agreement with the available experimental results. The calculations indicate that OsB in tungsten carbide is more energetically stable under the ambient condition than the metastable cesium chloride phase of OsB. Results of bulk modulus show that they are potential low compressible materials. The hardness of OsB2 is estimated by employing a semiempirical theory. The results indicate that OsB2 is an ultraincompressible material, but not a superhard material. The method designing superhard materials is different from one creating ultraincompressible materials.

The friction and wear properties of sputtered hard refractory compounds

NASA Technical Reports Server (NTRS)

Brainard, W. A.

1978-01-01

Several refractory silicide, boride, and carbide coatings were examined. The coatings were applied to type 440C steel surfaces by radio-frequency sputtering. The friction and wear properties of the coatings were found to be related to stoichiometry and impurity content of the bulk coating as well as the degree of interfacial adherence between coating and substrate. Bulk coating stoichiometry could to a large extent be controlled by the application of a negative bias voltage during deposition. Adherence was promoted by the formation of an oxidized layer at the interface. Deliberate preoxidizing of the 440C produced enhanced adherence for many compounds which are related to the formation of a mixed oxide transition region.

Assessment of the State of the Art of Ultra High Temperature Ceramics

NASA Technical Reports Server (NTRS)

Johnson, Sylvia; Gasch, Matt; Stackpoole, Mairead

2009-01-01

Ultra High Temperature Ceramics (UHTCs) are a family of materials that includes the borides, carbides and nitrides of hafnium-, zirconium- and titanium-based systems. UHTCs are famous for possessing some of the highest melting points of known materials. In addition, they are very hard, have good wear resistance, mechanical strength, and relatively high thermal conductivities (compared to other ceramic materials). Because of these attributes, UHTCs are ideal for thermal protection systems, especially those that require chemical and structural stability at extremely high operating temperatures. UHTCs have the potential to revolutionize the aerospace industry by enabling the development of sharp hypersonic vehicles or atmospheric entry probes capable of the most extreme entry conditions.

Identification of novel sulfur-containing steroids in sediments and petroleum: probable incorporation of sulfur into δ 5,7-sterols during early diagenesis

NASA Astrophysics Data System (ADS)

Sinninghe Damsté, Jaap S.; Schouten, Stefan; de Leeuw, Jan W.; van Duin, Adri C. T.; Geenevasen, Jan A. J.

1999-01-01

A novel sulfur-containing sterane, 4α,7α-epithio-5β-cholestane, has been identified in a sediment extract from the Miocene Northern Apennines marl (Italy) after its isolation by column chromatography and high pressure liquid chromatography. The compound has been characterised by GC-MS and mild Nickel boride desulfurisation and one and two-dimensional 1H NMR techniques. C 27-C 29 homologs have been detected in sediment extracts of three different formations and in one petroleum sample. These sulfur-containing steroids are probably formed by an intramolecular reaction of inorganic sulfides with early diagenetic products of Δ 5,7-sterols.

RESEARCH ON PHYSICAL AND CHEMICAL PRINCIPLES AFFECTING HIGH TEMPERATURE MATERIALS FOR ROCKET NOZZLES. Quarterly Progress Report, April 1, 1963-June 30, 1963

DOE Office of Scientific and Technical Information (OSTI.GOV)

Lowrie, R.

1963-10-31

The development and properties of refractory materials are described. Corrosion of zirconium carbide, niobium carbide, and niobium carbide-zirconium carbide systems by carbon dioxide and hydrochloric acid at 2250 deg C is reported. Corrosion of silver-tungsten alloys by carbon dioxide and oxygen at 2150 to 2440 deg K is summarized. Measurements of pyrolytic and ZTA graphite corrosion by carbon dioxide and oxygen at 2100 to 2800 deg K are shown. At 2300 deg C the rate of formation of methane from graphite and hydrogen is greatly reduced by the addition of helium, at constant hydrogen pressure. Up to 2000 deg Cmore » the effect of helium is small. The pyrolysis of methane on graphite at 2000 deg C is tabulated. Oxidation of tungsten to form WO/sub 2/ and WO/sub 3/ is reported. Vaporization of hafnium borides at 2297 to 2538 deg K is analyzed. The lattice parameters of ZrB/sub 2/ at of TiN/sub 0.6/ and TiN/sub 0.75/ are discussed. Powder metallurgical techniques are used to prepare TiB/sub 2/, ZrB/sub 2/, HfB/ sub 2/, NbB/sub 2/, a nd TaB/sub 2/ for detailed x-ray characterization. The electric conductivity of NbC-ZrC systems is reported. General descriptions are given of analytical techniques for free carbon in carbides and spectrographic methods for metallic impurities in carbides and borides. Preliminary roomtemperature measurements are reported of the elastic properties of polycrystalline ZrB/sub 2/. Titanium carbide is brazed to tungsten with a platinum-boron system. A largegrained polycrystalline specimen of ZrC is plastically deformed in creep at 2134 deg C. Metallographic and x-ray examinations of polycrystalline TiC specimens deformed in creep reveal an increasing development with deformation of subgrains having preferred orientation. (N.W.R.)« less

The effect of anti-phase domain size on the ductility of a rapidly solidified Ni3Al-Cr alloy

NASA Technical Reports Server (NTRS)

Carro, G.; Bertero, G. A.; Wittig, J. E.; Flanagan, W. F.

1989-01-01

Tensile tests on splat-quenched Ni3Al-Cr alloys showed a sharp decrease in ductility with long-time annealing. The growth of the initially very-fine-size anti-phase domains showed a tenuous correlation with ductility up to a critical size, where ductility was lost. The grain size was relatively unaffected by these annealing treatments, but the grain-boundary curvature decreased, implying less toughness. An important observation was that, for the longest annealing time, a chromium-rich precipitate formed, which the data indicate could be a boride. Miniaturized tensile tests were performed on samples which were all obtained from the same splat-quenched foil, and the various domain sizes were controlled by subsequent annealing treatments.

Two phase titanium aluminide alloy

DOEpatents

Deevi, Seetharama C.; Liu, C. T.

2001-01-01

A two-phase titanic aluminide alloy having a lamellar microstructure with little intercolony structures. The alloy can include fine particles such as boride particles at colony boundaries and/or grain boundary equiaxed structures. The alloy can include alloying additions such as .ltoreq.10 at % W, Nb and/or Mo. The alloy can be free of Cr, V, Mn, Cu and/or Ni and can include, in atomic %, 45 to 55% Ti, 40 to 50% Al, 1 to 5% Nb, 0.3 to 2% W, up to 1% Mo and 0.1 to 0.3% B. In weight %, the alloy can include 57 to 60% Ti, 30 to 32% Al, 4 to 9% Nb, up to 2% Mo, 2 to 8% W and 0.02 to 0.08% B.

Combustion synthesis of boride and other composites

DOEpatents

Halverson, Danny C.; Lum, Beverly Y.; Munir, Zuhair A.

1989-01-01

A self-sustaining combustion synthesis process for producing hard, tough, lightweight B.sub.4 C/TiB.sub.2 composites is based on the thermodynamic dependence of adiabatic temperature and product composition on the stoichiometry of the B.sub.4 C and TiB.sub.2 reactants. For lightweight products the composition must be relatively rich in the B.sub.4 C component. B.sub.4 C-rich composites are obtained by varying the initial temperature of the reactants. The product is hard, porous material whose toughness can be enhanced by filling the pores with aluminum or other metal phases using a liquid metal infiltration process. The process can be extended to the formation of other composites having a low exothermic component.

Oxidation-induced contraction and strengthening of boron fibers

NASA Technical Reports Server (NTRS)

Dicarlo, J. A.; Wagner, T. C.

1981-01-01

An investigation was conducted to measure and understand the physical and mechanical effects that occur in boron fibers during and after thermal treatment in a controlled oxygen argon gaseous mixture. Of principal concern was the optimization of this treatment as a secondary processing method for significantly improving fiber tensile strength. Strengthening was accomplished by an oxidation induced axial contraction of the fiber and a resulting axial compression of strength limiting flaws within the fiber's tungsten boride core. Various physical observations were used to develop mechanistic models for oxidation, contraction, and flow formation. Processing guidelines are discussed for possibly exceeding the 5.5 GN/sq m strength limit and also for achieving fiber strengthening during application of boron containing diffusion barrier coatings.

Characterization and Computational Modeling of Minor Phases in Alloy LSHR

NASA Technical Reports Server (NTRS)

Jou, Herng-Jeng; Olson, Gregory; Gabb, Timothy; Garg, Anita; Miller, Derek

2012-01-01

The minor phases of powder metallurgy disk superalloy LSHR were studied. Samples were consistently heat treated at three different temperatures for long times to approach equilibrium. Additional heat treatments were also performed for shorter times, to assess minor phase kinetics in non-equilibrium conditions. Minor phases including MC carbides, M23C6 carbides, M3B2 borides, and sigma were identified. Their average sizes and total area fractions were determined. CALPHAD thermodynamics databases and PrecipiCalc(TradeMark), a computational precipitation modeling tool, were employed with Ni-base thermodynamics and diffusion databases to model and simulate the phase microstructural evolution observed in the experiments with an objective to identify the model limitations and the directions of model enhancement.

Longitudinal residual stresses in boron fibers

NASA Technical Reports Server (NTRS)

Behrendt, D. R.

1976-01-01

A method of measuring the longitudinal residual stress distribution in boron fibers is presented. The residual stresses in commercial CVD boron on tungsten fibers of 102, 142, and 203 microns (4, 5.6, and 8 mil) diameters were determined. Results for the three sizes show a compressive stress at the surface 800 to -1400 MN/sq m 120 to -200 ksi), changing monotonically to a region of tensile stress within the boron. At approximately 25 percent of the original radius, the stress reaches a maximum tensile 600 to 1000 MN/sq m(90 to 150 ksi) and then decreases to compressive near the tungsten boride core. The core itself is under a compressive stress of approximately -1300 MN/sq m (-190 ksi). The effects of surface removal on core residual stress and core-initiated fracture are discussed.

High-pressure, high-temperature synthesis of superhard boron suboxide

DOE Office of Scientific and Technical Information (OSTI.GOV)

Hubert, H.; Garvie, L.A.J.; Leinenweber, K.

A multianvil device was used to investigate the formation of B{sub x}O phases produced in the 2 to 10 GPa pressure range with temperatures between 1,000 and 1,800 C. Amorphous and crystalline B and BP were oxidized using B{sub 2}O{sub 3} and CrO{sub 3}. Using powder X-ray diffraction and parallel electron energy-loss spectroscopy (PEELS), the authors were unable to detect graphitic or diamond-structured B{sub 2}O, reported in previous studies. The refractory boride B{sub 6}O, which has the {alpha}-rhombohedral boron structure, is the dominant suboxide in the P and T range of the investigation. PEELS with a transmission electron microscope wasmore » used to characterize the boron oxides.« less

Combustion synthesis of boride and other composites

DOEpatents

Halverson, D.C.; Lum, B.Y.; Munir, Z.A.

1988-07-28

A self-sustaining combustion synthesis process for producing hard, tough, lightweight B/sub 4/C/TiB/sub 2/ composites is described. It is based on the thermodynamic dependence of adiabatic temperature and product composition on the stoichiometry of the B/sub 4/C and TiB/sub 2/ reactants. For lightweight products the composition must be relatively rich in the B/sub 4/C component. B/sub 4/C-rich composites are obtained by varying the initial temperature of the reactants. The product is hard, porous material whose toughness can be enhanced by filling the pores with aluminum or other metal phases using a liquid metal infiltration process. The process can be extended to the formation of other composites having a low exothermic component. 9 figs., 4 tabs.

Oxidation-induced contraction and strengthening of boron fibers

NASA Technical Reports Server (NTRS)

Dicarlo, J. A.; Wagner, T. C.

1981-01-01

An investigation of the physical and mechanical effects of thermal treatment in a controlled oxygen-argon atmosphere on boron fibers is reported, with attention to the optimization of such treatment as a secondary processing method for improvement of fiber strength. The strengthening mechanism is comprised of an oxidation-induced axial contraction of the fiber, accompanied by axial compression of strength-limiting flaws within the fiber's tungsten boride core. It was found that after an oxidation contraction of 0.3% near 900 C, and a slight surface etch near 100 C, the average tensile strength of 203-micron fibers increased from 500 to 800 ksi. Various physical observations are used to develop mechanistic models of oxidation, contraction, and the formation of new flaws in the boron sheath at contractions greater than 0.3%.

Direct synthesis of calcium borohydride

DOEpatents

Ronnebro, Ewa Carin Ellinor [Dublin, CA; Majzoub, Eric H [Pleasanton, CA

2009-10-27

A method is disclosed for directly preparing an alkaline earth metal borohydride, i.e. Ca(BH.sub.4).sub.2, from the alkaline earth metal hydride and the alkaline earth metal boride. The borohydride thus prepared is doped with a small portion of a metal chloride catalyst compound, such as RuCl.sub.3, TiCl.sub.3, or a mixture of TiCl.sub.3 and palladium metal. The process provides for mechanically mixing the dry reagents under an inert atmosphere followed by charging the mixed materials with high pressure hydrogen at about 70 MPa while heating the mixture to about 400.degree. C. The method is relatively simple and inexpensive and provides reversible hydride compounds which are free of the usual contamination introduced by prior art wet chemical methods.

(Pt{sub 1–x}Cu{sub x}){sub 3}Cu{sub 2}B and Pt{sub 9}Cu{sub 3}B{sub 5}, the first examples of copper platinum borides. Observation of superconductivity in a novel boron filled β-Mn-type compound

DOE Office of Scientific and Technical Information (OSTI.GOV)

Salamakha, Leonid P.; Sologub, Oksana, E-mail: oksana.sologub@univie.ac.at; Stöger, Berthold

New ternary copper platinum borides have been synthesized by arc melting of pure elements followed by annealing at 600 °C. The structures have been studied by X-ray single crystal and powder diffraction. (Pt{sub 1−x}Cu{sub x}){sub 3}Cu{sub 2}B (x=0.33) forms a B-filled β-Mn-type structure (space group P4{sub 1}32; a=0.6671(1) nm). Cu atoms are distributed preferentially on the 8c atom sites, whereas the 12d site is randomly occupied by Pt and Cu atoms (0.670(4) Pt±0.330(4) Cu). Boron is located in octahedral voids of the parent β-Mn-type structure. Pt{sub 9}Cu{sub 3}B{sub 5} (space group P-62m; a=0.9048(3) nm, c=0.2908(1) nm) adopts the Pt{sub 9}Zn{submore » 3}B{sub 5–δ}-type structure. It has a columnar architecture along the short translation vector exhibiting three kinds of [Pt{sub 6}] trigonal prism columns (boron filled, boron semi-filled and empty) and Pt channels with a pentagonal cross section filled with Cu atoms. The striking structural feature is a [Pt{sub 6}] cluster in form of an empty trigonal prism at the origin of the unit cell, which is surrounded by coupled [BPt{sub 6}] and [Pt{sub 6}] trigonal prisms, rotated perpendicularly to the central one. There is no B–B contact as well as Cu–B contact in the structure. The relationships of Pt{sub 9}Cu{sub 3}B{sub 5} structure with the structure of Ti{sub 1+x}Os{sub 2−x}RuB{sub 2} as well as with the structure families of metal sulfides and aluminides have been elucidated. (Pt{sub 1–x}Cu{sub x}){sub 3}Cu{sub 2}B (x=0.3) (B-filled β-Mn-type structure) is a bulk superconductor with a transition temperature of about 2.06 K and an upper critical field μ{sub 0}H{sub C2}(0){sup WHH} of 1.2 T, whereas no superconducting transition has been observed up to 0.3 K in Pt{sub 9}Cu{sub 3}B{sub 5} (Pt{sub 9}Zn{sub 3}B{sub 5–δ}-type structure) from electrical resistivity measurements. - Highlights: • First two copper platinum borides, (Pt{sub 0.67}Cu{sub 0.33}){sub 3}Cu{sub 2}B and Pt{sub 9}Cu{sub 3}B{sub 5} were obtained. • (Pt{sub 0.67}Cu{sub 0.33}){sub 3}Cu{sub 2}B forms a B-filled β-Mn-type structure. • Pt{sub 9}Cu{sub 3}B{sub 5} adopts a Pt{sub 9}Zn{sub 3}B{sub 5–δ}-type structure. • Boron atoms exhibit octahedral and trigonal prismatic coordination. • (Pt{sub 1–x}Cu{sub x})3Cu{sub 2}B (x=0.3) is a bulk superconductor with T{sub c} 2.06 K.« less

New examples of ternary rare-earth metal boride carbides containing finite boron carbon chains: The crystal and electronic structure of RE15B6C20 (RE=Pr, Nd)

NASA Astrophysics Data System (ADS)

Babizhetskyy, Volodymyr; Mattausch, Hansjürgen; Simon, Arndt; Hiebl, Kurt; Ben Yahia, Mouna; Gautier, Régis; Halet, Jean-François

2008-08-01

The ternary rare-earth metal boride carbides RE15B6C20 (RE=Pr, Nd) were synthesized by co-melting the elements. They exist above 1270 K. Their crystal structures were determined from single-crystal X-ray diffraction data. Both crystallize in the space group P1¯, Z=1, a=8.3431(8) Å, b=9.2492(9) Å, c=8.3581(8) Å, α=84.72(1)°, β=89.68(1)°, γ =84.23(1)° (R1=0.041 (wR2=0.10) for 3291 reflections with Io>2σ(Io)) for Pr15B6C20, and a=8.284(1) Å, b=9.228(1) Å, c=8.309(1) Å, α=84.74(1)°, β=89.68(1)°, γ=84.17(2)° (R1=0.033 (wR2=0.049) for 2970 reflections with Io>2σ(Io)) for Nd15B6C20. Their structure consists of a three-dimensional framework of rare-earth metal atoms resulting from the stacking of slightly corrugated and distorted square nets, leading to cavities filled with unprecedented B2C4 finite chains, disordered C3 entities and isolated carbon atoms, respectively. Structural and theoretical analyses suggest the ionic formulation (RE3+)15([B2C4]6-)3([C3]4-)2(C4-)2·11ē. Accordingly, density functional theory calculations indicate that the compounds are metallic. Both structural arguments as well as energy calculations on different boron vs. carbon distributions in the B2C4 chains support the presence of a CBCCBC unit. Pr15B6C18 exhibits antiferromagnetic order at TN=7.9 K, followed by a meta-magnetic transition above a critical external field B>0.03 T. On the other hand, Nd15B6C18 is a ferromagnet below TC≈40 K.

High-Entropy Metal Diborides: A New Class of High-Entropy Materials and a New Type of Ultrahigh Temperature Ceramics

NASA Astrophysics Data System (ADS)

Gild, Joshua; Zhang, Yuanyao; Harrington, Tyler; Jiang, Sicong; Hu, Tao; Quinn, Matthew C.; Mellor, William M.; Zhou, Naixie; Vecchio, Kenneth; Luo, Jian

2016-11-01

Seven equimolar, five-component, metal diborides were fabricated via high-energy ball milling and spark plasma sintering. Six of them, including (Hf0.2Zr0.2Ta0.2Nb0.2Ti0.2)B2, (Hf0.2Zr0.2Ta0.2Mo0.2Ti0.2)B2, (Hf0.2Zr0.2Mo0.2Nb0.2Ti0.2)B2, (Hf0.2Mo0.2Ta0.2Nb0.2Ti0.2)B2, (Mo0.2Zr0.2Ta0.2Nb0.2Ti0.2)B2, and (Hf0.2Zr0.2Ta0.2Cr0.2Ti0.2)B2, possess virtually one solid-solution boride phase of the hexagonal AlB2 structure. Revised Hume-Rothery size-difference factors are used to rationalize the formation of high-entropy solid solutions in these metal diborides. Greater than 92% of the theoretical densities have been generally achieved with largely uniform compositions from nanoscale to microscale. Aberration-corrected scanning transmission electron microscopy (AC STEM), with high-angle annular dark-field and annular bright-field (HAADF and ABF) imaging and nanoscale compositional mapping, has been conducted to confirm the formation of 2-D high-entropy metal layers, separated by rigid 2-D boron nets, without any detectable layered segregation along the c-axis. These materials represent a new type of ultra-high temperature ceramics (UHTCs) as well as a new class of high-entropy materials, which not only exemplify the first high-entropy non-oxide ceramics (borides) fabricated but also possess a unique non-cubic (hexagonal) and layered (quasi-2D) high-entropy crystal structure that markedly differs from all those reported in prior studies. Initial property assessments show that both the hardness and the oxidation resistance of these high-entropy metal diborides are generally higher/better than the average performances of five individual metal diborides made by identical fabrication processing.

Buried oxide layer in silicon

DOEpatents

Sadana, Devendra Kumar; Holland, Orin Wayne

2001-01-01

A process for forming Silicon-On-Insulator is described incorporating the steps of ion implantation of oxygen into a silicon substrate at elevated temperature, ion implanting oxygen at a temperature below 200.degree. C. at a lower dose to form an amorphous silicon layer, and annealing steps to form a mixture of defective single crystal silicon and polycrystalline silicon or polycrystalline silicon alone and then silicon oxide from the amorphous silicon layer to form a continuous silicon oxide layer below the surface of the silicon substrate to provide an isolated superficial layer of silicon. The invention overcomes the problem of buried isolated islands of silicon oxide forming a discontinuous buried oxide layer.

Formation of porous silicon oxide from substrate-bound silicon rich silicon oxide layers by continuous-wave laser irradiation

NASA Astrophysics Data System (ADS)

Wang, Nan; Fricke-Begemann, Th.; Peretzki, P.; Ihlemann, J.; Seibt, M.

2018-03-01

Silicon nanocrystals embedded in silicon oxide that show room temperature photoluminescence (PL) have great potential in silicon light emission applications. Nanocrystalline silicon particle formation by laser irradiation has the unique advantage of spatially controlled heating, which is compatible with modern silicon micro-fabrication technology. In this paper, we employ continuous wave laser irradiation to decompose substrate-bound silicon-rich silicon oxide films into crystalline silicon particles and silicon dioxide. The resulting microstructure is studied using transmission electron microscopy techniques with considerable emphasis on the formation and properties of laser damaged regions which typically quench room temperature PL from the nanoparticles. It is shown that such regions consist of an amorphous matrix with a composition similar to silicon dioxide which contains some nanometric silicon particles in addition to pores. A mechanism referred to as "selective silicon ablation" is proposed which consistently explains the experimental observations. Implications for the damage-free laser decomposition of silicon-rich silicon oxides and also for controlled production of porous silicon dioxide films are discussed.

The use of moments of momentum to account for crystal habits

NASA Technical Reports Server (NTRS)

Barber, P. G.

1985-01-01

A three-step theory of crystal growth is proposed which involves first an association of molecules or ions in solution to form an impinging growth unit, then second the orientation of this unit prior to its impact on the surface of a crystal, and finally the attachment of this unit to the crystal face. From this theory the habit of a crystal is dependent upon the moments of momentum of the impinging growth unit. The results of sample calculations are presented or sodium chloride, succinic acid, sucrose, and chromium boride. The faces predicted by this proposed theory are compared with those predicted by other, energy-based calculations and with those experimentally observed. The proposed theory suggests alternative strategies for crystallization and habit modification which may be of technological importance. Listings of the two computer programs that were used are provided.

Superconductivity between standard types: Multiband versus single-band materials

DOE Office of Scientific and Technical Information (OSTI.GOV)

Vagov, A.; Shanenko, A. A.; Milošević, M. V.

In the nearest vicinity of the critical temperature, types I and II of conventional single-band superconductors interchange at the Ginzburg-Landau parameter κ = 1/√2. At lower temperatures this point unfolds into a narrow but finite interval of κ’s, shaping an intertype (transitional) domain in the (κ,T ) plane. In the present work, based on the extended Ginzburg-Landau formalism, we show that the same picture of the two standard types with the transitional domain in between applies also to multiband superconductors. However, the intertype domain notably widens in the presence of multiple bands and can become extremely large when the systemmore » has a significant disparity between the band parameters. It is concluded that many multiband superconductors, such as recently discovered borides and iron-based materials, can belong to the intertype regime.« less

Liner for extrusion billet containers. Interim Technical Documentary Progress Report, February 1--April 30, 1963

DOE Office of Scientific and Technical Information (OSTI.GOV)

Spachner, S. A.

1963-05-01

A shrink-fit assembly device for buildup of ceramiccoated liner and sleeve assemblies was tested and modified to develop desired temperatures and suitable heat distribution in sleeves, which were heated. Nine different compositions of fiber metal reinforced ceramic compacts were produced for preliminary evaluation of suitability for extrusion liner use. Procedures were developed for welding short, hollow ceramic cylinders of high-strength metal carbides and borides to form a ceramic extrusion liner of suitable length. Dissassembly tooling for rapid separation of shrink-fitted sleeves from a worn liner was designed, fabricated, and tested. Preliminary extrusion testing of an alumina-coated liner was carried out,more » using SAE 4340 steel billets extruded to rod at 12 : 1 and 16 : 1 ratios. No coating wear was noted after extrusion of 3 billets. (auth)« less

Systematic investigation of structural, electronic, optical and thermal properties of ternary MoAlB; an ab initio approach

NASA Astrophysics Data System (ADS)

Rajpoot, Priyanka; Rastogi, Anugya; Verma, U. P.

2018-02-01

Structural, electronic, optical and thermal properties of molybdenum aluminum boride (MoAlB) have been analyzed systematically using the full potential linearized augmented plane wave method based on density functional theory at ambient condition as well as high pressure and high temperature. Density of states and band structure calculation reflect the metallic character of MoAlB. In addition to this, the electron charge density calculation reveals the strong covalent bonding, in between ‘B’ atoms as well as ‘Mo’ and ‘B’ atoms. Optical parameters exhibit anisotropic nature and MoAlB become transparent in ultraviolet region for the radiation of energy above 25 eV. The thermal properties were investigated by using the quasi-harmonic Debye model at high temperature and high pressure.

NASA research on refractory compounds.

NASA Technical Reports Server (NTRS)

Gangler, J. J.

1971-01-01

The behavior and properties of the refractory carbides, nitrides, and borides are being investigated by NASA as part of its research aimed at developing superior heat resistant materials for aerospace applications. Fundamental studies on the electronic and defect structures of the carbides indicate that there is promise for improving the strength and ductility of these materials. Studies of the zirconium-carbon-oxygen system show that zirconium oxycarbides of different compositions and lattice parameters can be formed between 1500 and 1900 C and are stable below 1500 C. More applied studies show that hot working generally improves the microstructure and therefore the strength of TiC and NbC. Sintering studies on UN indicate that very high densities can be achieved. Hot pressing of cermets of HfN and HfC produces good mechanical properties for high temperature bearing applications.

Formation of Minor Phases in a Nickel-Based Disk Superalloy

NASA Technical Reports Server (NTRS)

Gabb, T. P.; Garg, A.; Miller, D. R.; Sudbrack, C. K.; Hull, D. R.; Johnson, D.; Rogers, R. B.; Gayda, J.; Semiatin, S. L.

2012-01-01

The minor phases of powder metallurgy disk superalloy LSHR were studied. Samples were consistently heat treated at three different temperatures for long times to approximate equilibrium. Additional heat treatments were also performed for shorter times, to then assess non-equilibrium conditions. Minor phases including MC carbides, M23C6 carbides, M3B2 borides, and sigma were identified. Their transformation temperatures, lattice parameters, compositions, average sizes and total area fractions were determined, and compared to estimates of an existing phase prediction software package. Parameters measured at equilibrium sometimes agreed reasonably well with software model estimates, with potential for further improvements. Results for shorter times representing non-equilibrium indicated significant potential for further extension of the software to such conditions, which are more commonly observed during heat treatments and service at high temperatures for disk applications.

Development and Characterization of Titanium Compound N anostructures

NASA Astrophysics Data System (ADS)

Zhou, Zhou

The development and characterization of titanium compound nanostructures have been achieved, for potential applications in energy industry. Oil and gas, one of the traditional industry fields, observes accumulating demands on active implementations of nanotechnology, for the numerous advantages that nanomaterials can introduce to both product performances and field operations. By using chemical vapor deposition and liquid exfoliation, various titanium compound nanostructures have been synthesized through this project. Attractively, these two material fabrication methods have been recognized to be industrial friendly in terms of cost efficiency and productivity. The development of nanostructures, aiming at oil and gas field applications, presents novel solutions for existing issues, such as low durability of drilling tools, high friction in mechanical operations and ineffective heat dissipation. Titanium compound nanostructures, including titanium borides, nitrides and sulfides are therefore investigated for such applications as protective coating, lubrication and thermal management.

Method of forming buried oxide layers in silicon

DOEpatents

Sadana, Devendra Kumar; Holland, Orin Wayne

2000-01-01

A process for forming Silicon-On-Insulator is described incorporating the steps of ion implantation of oxygen into a silicon substrate at elevated temperature, ion implanting oxygen at a temperature below 200.degree. C. at a lower dose to form an amorphous silicon layer, and annealing steps to form a mixture of defective single crystal silicon and polycrystalline silicon or polycrystalline silicon alone and then silicon oxide from the amorphous silicon layer to form a continuous silicon oxide layer below the surface of the silicon substrate to provide an isolated superficial layer of silicon. The invention overcomes the problem of buried isolated islands of silicon oxide forming a discontinuous buried oxide layer.

Method and apparatus for stable silicon dioxide layers on silicon grown in silicon nitride ambient

NASA Technical Reports Server (NTRS)

Cohen, R. A.; Wheeler, R. K. (Inventor)

1974-01-01

A method and apparatus for thermally growing stable silicon dioxide layers on silicon is disclosed. A previously etched and baked silicon nitride tube placed in a furnace is used to grow the silicon dioxide. First, pure oxygen is allowed to flow through the tube to initially coat the inside surface of the tube with a thin layer of silicon dioxide. After the tube is coated with the thin layer of silicon dioxide, the silicon is oxidized thermally in a normal fashion. If the tube becomes contaminated, the silicon dioxide is etched off thereby exposing clean silicon nitride and then the inside of the tube is recoated with silicon dioxide. As is disclosed, the silicon nitride tube can also be used as the ambient for the pyrolytic decomposition of silane and ammonia to form thin layers of clean silicon nitride.

RF performances of inductors integrated on localized p+-type porous silicon regions

PubMed Central

2012-01-01

To study the influence of localized porous silicon regions on radiofrequency performances of passive devices, inductors were integrated on localized porous silicon regions, full porous silicon sheet, bulk silicon and glass substrates. In this work, a novel strong, resistant fluoropolymer mask is introduced to localize the porous silicon on the silicon wafer. Then, the quality factors and resonant frequencies obtained with the different substrates are presented. A first comparison is done between the performances of inductors integrated on same-thickness localized and full porous silicon sheet layers. The effect of the silicon regions in the decrease of performances of localized porous silicon is discussed. Then, the study shows that the localized porous silicon substrate significantly reduces losses in comparison with high-resistivity silicon or highly doped silicon bulks. These results are promising for the integration of both passive and active devices on the same silicon/porous silicon hybrid substrate. PMID:23009746

[Study of purity tests for silicone resins].

PubMed

Sato, Kyoko; Otsuki, Noriko; Ohori, Akio; Chinda, Mitsuru; Furusho, Noriko; Osako, Tsutomu; Akiyama, Hiroshi; Kawamura, Yoko

2012-01-01

In the 8th edition of Japan's Specifications and Standards for Food Additives, the purity test for silicone resins requires the determination of the refractive index and kinetic viscosity of the extracted silicone oil, and allows for only a limited amount of silicon dioxide. In the purity test, carbon tetrachloride is used to separate the silicone oil and silicon dioxide. To exclude carbon tetrachloride, methods were developed for separating the silicone oil and silicon dioxide from silicone resin, which use hexane and 10% n-dodecylbenzenesulfonic acid in hexane. For silicone oil, the measured refractive index and kinetic viscosity of the silicone oil obtained from the hexane extract were shown to be equivalent to those of the intact silicone oil. In regard to silicon dioxide, it was confirmed that, following the separation with 10% n-dodecylbenzenesulfonic acid in hexane, the level of silicon dioxide in silicone resin can be accurately determined. Therefore, in this study, we developed a method for testing the purity of silicone resins without the use of carbon tetrachloride, which is a harmful reagent.

Fluidized bed silicon deposition from silane

NASA Technical Reports Server (NTRS)

Hsu, George C. (Inventor); Levin, Harry (Inventor); Hogle, Richard A. (Inventor); Praturi, Ananda (Inventor); Lutwack, Ralph (Inventor)

1982-01-01

A process and apparatus for thermally decomposing silicon containing gas for deposition on fluidized nucleating silicon seed particles is disclosed. Silicon seed particles are produced in a secondary fluidized reactor by thermal decomposition of a silicon containing gas. The thermally produced silicon seed particles are then introduced into a primary fluidized bed reactor to form a fluidized bed. Silicon containing gas is introduced into the primary reactor where it is thermally decomposed and deposited on the fluidized silicon seed particles. Silicon seed particles having the desired amount of thermally decomposed silicon product thereon are removed from the primary fluidized reactor as ultra pure silicon product. An apparatus for carrying out this process is also disclosed.

Fluidized bed silicon deposition from silane

NASA Technical Reports Server (NTRS)

Hsu, George (Inventor); Levin, Harry (Inventor); Hogle, Richard A. (Inventor); Praturi, Ananda (Inventor); Lutwack, Ralph (Inventor)

1984-01-01

A process and apparatus for thermally decomposing silicon containing gas for deposition on fluidized nucleating silicon seed particles is disclosed. Silicon seed particles are produced in a secondary fluidized reactor by thermal decomposition of a silicon containing gas. The thermally produced silicon seed particles are then introduced into a primary fluidized bed reactor to form a fludized bed. Silicon containing gas is introduced into the primary reactor where it is thermally decomposed and deposited on the fluidized silicon seed particles. Silicon seed particles having the desired amount of thermally decomposed silicon product thereon are removed from the primary fluidized reactor as ultra pure silicon product. An apparatus for carrying out this process is also disclosed.

Method of making silicon carbide-silicon composite having improved oxidation resistance

NASA Technical Reports Server (NTRS)

Wang, Hongyu (Inventor); Luthra, Krishan Lal (Inventor)

2002-01-01

A Silicon carbide-silicon matrix composite having improved oxidation resistance at high temperatures in dry or water-containing environments is provided. A method is given for sealing matrix cracks in situ in melt infiltrated silicon carbide-silicon matrix composites. The composite cracks are sealed by the addition of various additives, such as boron compounds, into the melt infiltrated silicon carbide-silicon matrix.

Silicon carbide-silicon composite having improved oxidation resistance and method of making

NASA Technical Reports Server (NTRS)

Wang, Hongyu (Inventor); Luthra, Krishan Lal (Inventor)

1999-01-01

A Silicon carbide-silicon matrix composite having improved oxidation resistance at high temperatures in dry or water-containing environments is provided. A method is given for sealing matrix cracks in situ in melt infiltrated silicon carbide-silicon matrix composites. The composite cracks are sealed by the addition of various additives, such as boron compounds, into the melt infiltrated silicon carbide-silicon matrix.

Silicon isotope fractionation in rice and cucumber plants over a life cycle: Laboratory studies at different external silicon concentrations

NASA Astrophysics Data System (ADS)

Sun, Yan; Wu, Lianghuan; Li, Xiaoyan; Sun, Li; Gao, Jianfei; Ding, Tiping

2016-11-01

Understanding the variations of silicon isotopes in terrestrial higher plants can be helpful toward elucidating the global biogeochemical silicon cycle. We studied silicon isotope fractionation in rice and cucumber plants over their entire life cycles. These two different silicon-absorbing plants were grown hydroponically at different external silicon concentrations. The ranges of δ30Si values in rice were -1.89‰ to 1.69‰, -1.81‰ to 1.96‰, and -2.08‰ to 2.02‰ at 0.17 mM, 1.70 mM, and 8.50 mM silicon concentrations, respectively. The ranges of δ30Si values in cucumber were -1.38‰ to 1.21‰, -1.33‰ to 1.26‰, and -1.62‰ to 1.40‰ at 0.085 mM, 0.17 mM, and 1.70 mM external silicon concentrations, respectively. A general increasing trend in δ30Si values from lower to upper plant parts reflected the preferential incorporation of lighter silicon isotopes from transpired water to biogenic opal. Furthermore, the active uptake mechanism regulated by several transporters might have also played an important role in the preferential transport of heavy silicon isotopes into aboveground plant parts. This suggested that silicon isotope fractionation in both rice and cucumber was a Rayleigh-like process. The data on δ30Si values for the whole plants and nutrient solutions indicated that biologically mediated silicon isotope fractionation occurred during silicon uptake by roots. At lower external silicon concentrations, heavy silicon isotopes entered plants more readily than light silicon isotopes. Conversely, at higher external silicon concentrations, light silicon isotopes entered plants more readily than heavy silicon isotopes.

Production of electronic grade lunar silicon by disproportionation of silicon difluoride

NASA Technical Reports Server (NTRS)

Agosto, William N.

1993-01-01

Waldron has proposed to extract lunar silicon by sodium reduction of sodium fluorosilicate derived from reacting sodium fluoride with lunar silicon tetrafluoride. Silicon tetrafluoride is obtained by the action of hydrofluoric acid on lunar silicates. While these reactions are well understood, the resulting lunar silicon is not likely to meet electronic specifications of 5 nines purity. Dale and Margrave have shown that silicon difluoride can be obtained by the action of silicon tetrafluoride on elemental silicon at elevated temperatures (1100-1200 C) and low pressures (1-2 torr). The resulting silicon difluoride will then spontaneously disproportionate into hyperpure silicon and silicon tetrafluoride in vacuum at approximately 400 C. On its own merits, silicon difluoride polymerizes into a tough waxy solid in the temperature range from liquid nitrogen to about 100 C. It is the silicon analog of teflon. Silicon difluoride ignites in moist air but is stable under lunar surface conditions and may prove to be a valuable industrial material that is largely lunar derived for lunar surface applications. The most effective driver for lunar industrialization may be the prospects for industrial space solar power systems in orbit or on the moon that are built with lunar materials. Such systems would require large quantities of electronic grade silicon or compound semiconductors for photovoltaics and electronic controls. Since silicon is the most abundant semimetal in the silicate portion of any solar system rock (approximately 20 wt percent), lunar silicon production is bound to be an important process in such a solar power project. The lunar silicon extraction process is discussed.

Theoretical considerations for Reaction-Formed Silicon Carbide (RFSC) formation by molten silicon infiltration into slurry-derived preforms

NASA Technical Reports Server (NTRS)

Behrendt, D. R.; Singh, M.

1993-01-01

For reaction-formed silicon carbide (RFSC) ceramics produced by silicon melt infiltration of porous carbon preforms, equations are developed to relate the amount of residual silicon to the initial carbon density. Also, for a slurry derived preform containing both carbon and silicon powder, equations are derived which relate the amount of residual silicon in the RFSC to the relative density of the carbon in the preform and to the amount of silicon powder added to the slurry. For a porous carbon preform that does not have enough porosity to prevent choking-off of the silicon infiltration, these results show that complete silicon infiltration can occur by adding silicon powder to the slurry mixture used to produce these preforms.

Tribological properties of sintered polycrystalline and single crystal silicon carbide

NASA Technical Reports Server (NTRS)

Miyoshi, K.; Buckley, D. H.; Srinivasan, M.

1982-01-01

Tribological studies and X-ray photoelectron spectroscopy analyses were conducted with sintered polycrystalline and single crystal silicon carbide surfaces in sliding contact with iron at various temperatures to 1500 C in a vacuum of 30 nPa. The results indicate that there is a significant temperature influence on both the friction properties and the surface chemistry of silicon carbide. The main contaminants on the as received sintered polycrystalline silicon carbide surfaces are adsorbed carbon, oxygen, graphite, and silicon dioxide. The surface revealed a low coefficient of friction. This is due to the presence of the graphite on the surface. At temperatures of 400 to 600 C graphite and copious amount of silicon dioxide were observed on the polycrystalline silicon carbide surface in addition to silicon carbide. At 800 C, the amount of the silicon dioxide decreased rapidly and the silicon carbide type silicon and carbon peaks were at a maximum intensity in the XPS spectra. The coefficients of friction were high in the temperature range 400 to 800 C. Small amounts of carbon and oxygen contaminants were observed on the as received single crystal silicon carbide surface below 250 C. Silicon carbide type silicon and carbon peaks were seen on the silicon carbide in addition to very small amount of graphite and silicon dioxide at temperatures of 450 to 800 C.

Laser-induced amorphization of silicon during pulsed-laser irradiation of TiN/Ti/polycrystalline silicon/SiO2/silicon

NASA Astrophysics Data System (ADS)

Chong, Y. F.; Pey, K. L.; Wee, A. T. S.; Thompson, M. O.; Tung, C. H.; See, A.

2002-11-01

In this letter, we report on the complex solidification structures formed during laser irradiation of a titanium nitride/titanium/polycrystalline silicon/silicon dioxide/silicon film stack. Due to enhanced optical coupling, the titanium nitride/titanium capping layer increases the melt depth of polycrystalline silicon by more than a factor of 2. It is found that the titanium atoms diffuse through the entire polycrystalline silicon layer during irradiation. Contrary to the expected polycrystalline silicon growth, distinct regions of polycrystalline and amorphous silicon are formed instead. Possible mechanisms for the formation of these microstructures are proposed.

Silicon-doped boron nitride coated fibers in silicon melt infiltrated composites

DOEpatents

Corman, Gregory Scot; Luthra, Krishan Lal

2002-01-01

A fiber-reinforced silicon-silicon carbide matrix composite having improved oxidation resistance at high temperatures in dry or water-containing environments is produced. The invention also provides a method for protecting the reinforcing fibers in the silicon-silicon carbide matrix composites by coating the fibers with a silicon-doped boron nitride coating.

Silicon-doped boron nitride coated fibers in silicon melt infiltrated composites

DOEpatents

Corman, Gregory Scot; Luthra, Krishan Lal

1999-01-01

A fiber-reinforced silicon--silicon carbide matrix composite having improved oxidation resistance at high temperatures in dry or water-containing environments is produced. The invention also provides a method for protecting the reinforcing fibers in the silicon--silicon carbide matrix composites by coating the fibers with a silicon-doped boron nitride coating.

Vertical integration of high-Q silicon nitride microresonators into silicon-on-insulator platform.

PubMed

Li, Qing; Eftekhar, Ali A; Sodagar, Majid; Xia, Zhixuan; Atabaki, Amir H; Adibi, Ali

2013-07-29

We demonstrate a vertical integration of high-Q silicon nitride microresonators into the silicon-on-insulator platform for applications at the telecommunication wavelengths. Low-loss silicon nitride films with a thickness of 400 nm are successfully grown, enabling compact silicon nitride microresonators with ultra-high intrinsic Qs (~ 6 × 10(6) for 60 μm radius and ~ 2 × 10(7) for 240 μm radius). The coupling between the silicon nitride microresonator and the underneath silicon waveguide is based on evanescent coupling with silicon dioxide as buffer. Selective coupling to a desired radial mode of the silicon nitride microresonator is also achievable using a pulley coupling scheme. In this work, a 60-μm-radius silicon nitride microresonator has been successfully integrated into the silicon-on-insulator platform, showing a single-mode operation with an intrinsic Q of 2 × 10(6).

Growth of silicon nanoclusters in thermal silicon dioxide under annealing in an atmosphere of nitrogen

DOE Office of Scientific and Technical Information (OSTI.GOV)

Ivanova, E. V., E-mail: Ivanova@mail.ioffe.ru; Sitnikova, A. A.; Aleksandrov, O. V.

2016-06-15

It is found for the first time that silicon nanoclusters are formed in the surface layer of thermal silicon dioxide under high-temperature annealing (T = 1150°C) in dried nitrogen. Analysis of the cathodoluminescence spectra shows that an imperfect surface layer appears upon such annealing of silicon dioxide, with silicon nanoclusters formed in this layer upon prolonged annealing. Transmission electron microscopy demonstrated that the silicon clusters are 3–5.5 nm in size and lie at a depth of about 10 nm from the surface. Silicon from the thermal film of silicon dioxide serves as the material from which the silicon nanoclusters aremore » formed. This method of silicon-nanocluster formation is suggested for the first time.« less

Mixed-metal effects on ultra-incompressible metal diborides: Density functional computations

NASA Astrophysics Data System (ADS)

Lin, Fei; Wu, Kechen; He, Jiangang; Sa, Rongjian; Li, Qiaohong; Wei, Yongqin

2010-07-01

Mixed-metal borides are promising superhard materials (Kaner et al. (2005) [1]). In this Letter, density functional computations have been applied to the structural, electronic and elastic properties of mixed-metal diborides Re 0.5Ir 0.5B 2, Re 0.5Tc 0.5B 2, Os 0.5W 0.5B 2 and Os 0.5Ru 0.5B 2. The elastic moduli decrease from pure metal diboride ReB 2 to Re 0.5Ir 0.5B 2 and on the contrary increase from OsB 2 to Os 0.5W 0.5B 2 because boron-metal interactions are contaminated by the occupied anti-bonding orbitals. Alloying ReB 2 (OsB 2) with Tc (Ru) decreases the elastic moduli owing to the relativistic effects. Mixed-metal effects on elastic deformations focus on bonding strengths, which effectively tune the elastic properties of metal diborides.

Mechanical characteristics of heterogeneous structures obtained by high-temperature brazing of corrosion-resistant steels with rapidly quenched non-boron nickel-based alloys

NASA Astrophysics Data System (ADS)

Kalin, B.; Penyaz, M.; Ivannikov, A.; Sevryukov, O.; Bachurina, D.; Fedotov, I.; Voennov, A.; Abramov, E.

2018-01-01

Recently, the use rapidly quenched boron-containing nickel filler metals for high temperature brazing corrosion resistance steels different classes is perspective. The use of these alloys leads to the formation of a complex heterogeneous structure in the diffusion zone that contains separations of intermediate phases such as silicides and borides. This structure negatively affects the strength characteristics of the joint, especially under dynamic loads and in corrosive environment. The use of non-boron filler metals based on the Ni-Si-Be system is proposed to eliminate this structure in the brazed seam. Widely used austenitic 12Cr18Ni10Ti and ferrite-martensitic 16Cr12MoSiWNiVNb reactor steels were selected for research and brazing was carried out. The mechanical characteristics of brazed joints were determined using uniaxial tensile and impact toughness tests, and fractography was investigated by electron microscopy.

Structure and properties of Hardox 450 steel with arc welded coatings

NASA Astrophysics Data System (ADS)

Ivanov, Yu. F.; Konovalov, S. V.; Kormyshev, V. E.; Gromov, V. E.; Teresov, A. D.; Semina, O. A.

2017-12-01

The paper reports on a study of the surface structure, phase composition, and microhardness of Hardox 450 steel with coatings deposited by arc welding of powder wires differing in chemical composition. The study shows that to a depth of 6-8 mm, the microhardness of the thus formed coatings is more than two times the microhardness of the base metal and that their higher mechanical properties are provided by martensite structure containing Nb2C and NbC carbides and Fe2B borides as eutectic lamellae with a transverse size of 30-70 nm; their volume reveals a net-like dislocation substructure with a scalar dislocation density of 1011 cm-2. The highest surface hardness is found for the steel coated with boron-containing wire material. Some ideas are suggested on possible mechanisms and temperature for the formation of Nb and B carbides during the process.

Impact of B 4C co-sputtering on structure and optical performance of Cr/Sc multilayer X-ray mirrors

DOE PAGES

Ghafoor, Naureen; Eriksson, Fredrik; Aquila, Andrew; ...

2017-01-01

We investigate the influence of B 4C incorporation during magnetron sputter deposition of Cr/Sc multilayers intended for soft X-ray reflective optics. Chemical analysis suggests formation of metal: boride and carbide bonds which stabilize an amorphous layer structure, resulting in smoother interfaces and an increased reflectivity. A near-normal incidence reflectivity of 11.7%, corresponding to a 67% increase, is achieved at λ = 3.11 nm upon adding 23 at.% (B + C). The advantage is significant for the multilayer periods larger than 1.8 nm, where amorphization results in smaller interface widths, for example, giving 36% reflectance and 99.89% degree of polarization nearmore » Brewster angle for a multilayer polarizer. The modulated ion-energy-assistance during the growth is considered vital to avoid intermixing during the interface formation even when B + C are added.« less

Review of Thermal Spray Coating Applications in the Steel Industry: Part 2—Zinc Pot Hardware in the Continuous Galvanizing Line

NASA Astrophysics Data System (ADS)

Matthews, S.; James, B.

2010-12-01

This two-part article series reviews the application of thermal spray coating technology in the production of steel and steel sheet products. Part 2 of this article series is dedicated to coating solutions in the continuous galvanizing line. The corrosion mechanisms of Fe- and Co-based bulk materials are briefly reviewed as a basis for the development of thermal spray coating solutions. WC-Co thermal spray coatings are commonly applied to low Al-content galvanizing hardware due to their superior corrosion resistance compared to Fe and Co alloys. The effect of phase degradation, carbon content, and WC grain size are discussed. At high Al concentrations, the properties of WC-Co coatings degrade significantly, leading to the application of oxide-based coatings and corrosion-resistant boride containing coatings. The latest results of testing are summarized, highlighting the critical coating parameters.

Microstructural observations in rapidly-solidified and heat-treated Ni3Al-Cr alloys

DOE Office of Scientific and Technical Information (OSTI.GOV)

Carro, G.; Flanagan, W.F.

1992-08-01

The microstructural development following heat treatments of several rapidly-solidified Ni3Al-Cr and Ni3Al-Cr-B alloys is presented. Depending on composition, the as-solidified samples were either 100 percent gamma-prime phase - in the form of fine antiphase domains (APD) - or a mixture of gamma-prime (APDs) and beta phases. Upon annealing, the as-solidified microstructures transform to either APD-free gamma-prime or mixtures of gamma and gamma-prime phases. For those compositions where the quenched microstructures were 100 percent gamma-prime it was observed that APD coarsening followed conventional grain-growth kinetics, but when gamma phase precipitated on the APD boundaries the rate constant changed abruptly while themore » time exponent remained unaffected. It was also found that alloys containing critical amounts of chromium and boron are susceptible to precipitation of the boride Cr5B3. 14 refs.« less

Microstructural observations in rapidly-solidified and heat-treated Ni sub 3 Al-Cr alloys

DOE Office of Scientific and Technical Information (OSTI.GOV)

Carro, G.; Flanagan, W.F.

1992-01-01

In this paper , the microstructural development following heat treatments of several rapidly-solidified Ni{sub 3}Al-Cr and Ni{sub 3}Al-Cr-B alloys is presented. Depending on composition, the as-solidified samples were either 100% {gamma} phase-in the form of fine anti-phase domains (APD)-or a mixture of {gamma} (APDs) and {beta} phases. Upon annealing, the as-solidified microstructures transform to either APD-free {gamma}or mixtures of {gamma}and {gamma}{prime} phases. For those compositions where the quenched microstructures were 100{gamma}{prime} it was observed that APD coarsening followed conventional grain-growth kinetics, but when {gamma} phase precipitated on the APD boundaries the rate constant changed abruptly while the time exponent remainedmore » unaffected. It was also found that alloys containing critical amounts of chromium and boron are susceptible to precipitation of the boride Cr{sub 5}B{sub 3}.« less

Microstructural observations in rapidly-solidified and heat-treated Ni3Al-Cr alloys

NASA Technical Reports Server (NTRS)

Carro, G.; Flanagan, W. F.

1992-01-01

The microstructural development following heat treatments of several rapidly-solidified Ni3Al-Cr and Ni3Al-Cr-B alloys is presented. Depending on composition, the as-solidified samples were either 100 percent gamma-prime phase - in the form of fine antiphase domains (APD) - or a mixture of gamma-prime (APDs) and beta phases. Upon annealing, the as-solidified microstructures transform to either APD-free gamma-prime or mixtures of gamma and gamma-prime phases. For those compositions where the quenched microstructures were 100 percent gamma-prime it was observed that APD coarsening followed conventional grain-growth kinetics, but when gamma phase precipitated on the APD boundaries the rate constant changed abruptly while the time exponent remained unaffected. It was also found that alloys containing critical amounts of chromium and boron are susceptible to precipitation of the boride Cr5B3.

Effects of cobalt on the microstructure of Udimet 700. M.S. Thesis Final Report

NASA Technical Reports Server (NTRS)

Engel, M. A.

1982-01-01

Cobalt, a critical and "strategic" alloying element in many superalloys, was systematically substituted by nickel in experimental alloys Udimet 700 containing 0.1, 4.3, 8.6, 12.8 and the standard 17.0 wt.% cobalt. Electrolytic and chemical extraction techniques, X-ray diffraction, scanning electron and optical microscopy were used for the microstructural studies. The total weight fraction of gamma' was not significantly affected by the cobalt content, although a difference in the size and quantities of the primary and secondary gamma' phases was apparent. The lattice parameters of the gamma' were found to increase with increasing cobalt content while the lattice mismatch between the gamma matrix and gamma' phases decreased. Other significant effects of cobalt on the weight fraction, distribution and formation of the carbide and boride phases as well as the relative stability of the experimental alloys during long-time aging are also discussed.

Impact of B 4C co-sputtering on structure and optical performance of Cr/Sc multilayer X-ray mirrors

DOE Office of Scientific and Technical Information (OSTI.GOV)

Ghafoor, Naureen; Eriksson, Fredrik; Aquila, Andrew

We investigate the influence of B 4C incorporation during magnetron sputter deposition of Cr/Sc multilayers intended for soft X-ray reflective optics. Chemical analysis suggests formation of metal: boride and carbide bonds which stabilize an amorphous layer structure, resulting in smoother interfaces and an increased reflectivity. A near-normal incidence reflectivity of 11.7%, corresponding to a 67% increase, is achieved at λ = 3.11 nm upon adding 23 at.% (B + C). The advantage is significant for the multilayer periods larger than 1.8 nm, where amorphization results in smaller interface widths, for example, giving 36% reflectance and 99.89% degree of polarization nearmore » Brewster angle for a multilayer polarizer. The modulated ion-energy-assistance during the growth is considered vital to avoid intermixing during the interface formation even when B + C are added.« less

Energy conversion device and method of reducing friction therein

DOEpatents

Solovyeva, Lyudmila Mikhaylovna; Jansson, Kyle S; Elmoursi, Alaa AbdelAzim; Zhu, Dong; Milner, Robert; Daughterty, Early Eugene; Higdon, Clifton Baxter; Elagamy, Kamel Abdel-Khalik; Hicks, Aaron Michael

2013-10-08

A device configured for converting energy includes a first surface, a second surface configured for moving with respect to the first surface during operation of the device, and a coating disposed on at least one of the first surface and the second surface. The coating includes a first layer of a ceramic alloy represented by the general formula AlMgB.sub.14--X, wherein X is present in an amount of from 0 to 70 parts by weight based on 100 parts by weight of the ceramic alloy and is a doping agent selected from the group of Group IV elements and borides and nitrides thereof, and a second layer disposed on the first layer and including carbon in a gradient concentration. The coating has a hardness of from 10 to 20 GPa and a coefficient of friction of less than or equal to 0.12.

Wet-chemical synthesis of nanoscale iron boride, XAFS analysis and crystallisation to α-FeB.

PubMed

Rades, Steffi; Kornowski, Andreas; Weller, Horst; Albert, Barbara

2011-06-20

The reaction of lithium tetrahydridoborate and iron bromide in high boiling ether as reaction medium produces an ultrafine, pyrophoric and magnetic precipitate. X-ray and electron diffraction proved the product to be amorphous. According to X-ray absorption fine structure spectroscopy (XAFS) the precipitate has FeB structure up to nearly two coordination spheres around an iron absorber atom. Transmission electron microscopy (TEM) confirms the ultrafine powder to be nanoscale. Subsequent annealing at 450 °C causes the atoms to arrange in a more distinct FeB structure, and further thermal treatment to 1050 °C extends the local structure to the α-modification of FeB. Between 1050 °C and 1500 °C α-FeB is transformed into β-FeB. Copyright © 2011 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Effect of Laser Power on Metallurgical, Mechanical and Tribological Characteristics of Hardfaced Surfaces of Nickel-Based Alloy

NASA Astrophysics Data System (ADS)

Gnanasekaran, S.; Padmanaban, G.; Balasubramanian, V.

2017-12-01

In this present work, nickel based alloy was deposited on 316 LN austenitic stainless steel (ASS) by a laser hardfacing technique to investigate the influence of laser power on macrostructure, microstructure, microhardness, dilution and wear characteristics. The laser power varied from 1.1 to 1.9 kW. The phase constitution, microstructure and microhardness were examined by optical microscope, scanning electron microscopy, energy dispersion spectroscopy and Vickers microhardness tester. The wear characteristics of the hardfaced surfaces and substrate were evaluated at room temperature (RT) under dry sliding wear condition (pin-on-disc). The outcome demonstrates that as the laser power increases, dilution increases and hardness of the deposit decreases. This is because excess heat melts more volume of substrate material and increases the dilution; subsequently it decreases the hardness of the deposit. The microstructure of the deposit is characterized by Ni-rich carbide, boride and silicide.

Techniques for increasing boron fiber fracture strain

NASA Technical Reports Server (NTRS)

Dicarlo, J. A.

1977-01-01

Improvement in the strain-to-failure of CVD boron fibers is shown possible by contracting the tungsten boride core region and its inherent flaws. The results of three methods are presented in which etching and thermal processing techniques were employed to achieve core flaw contraction by internal stresses available in the boron sheath. After commercially and treatment induced surface flaws were removed from 203 micrometers (8 mil) fibers, the core flaw was observed to be essentially the only source of fiber fracture. Thus, fiber strain-to-failure was found to improve by an amount equal to the treatment induced contraction on the core flaw. Commercial feasibility considerations suggest as the most cost effective technique that method in which as-produced fibers are given a rapid heat treatment above 700 C. Preliminary results concerning the contraction kinetics and fracture behavior observed are presented and discussed both for high vacuum and argon gas heat treatment environments.

Refractory materials for high-temperature thermoelectric energy conversion

NASA Technical Reports Server (NTRS)

Wood, C.; Emin, D.

1983-01-01

Theoretical work of two decades ago adequately explained the transport behavior and effectively guided the development of thermoelectric materials of high conversion efficiencies of conventional semiconductors (e.g., SiGe alloys). The more significant contributions involved the estimation of optimum doping concentrations, the reduction of thermal conductivity by solid solution doping and the development of a variety of materials with ZT approx. 1 in the temperature range 300 K to 1200 K. ZT approx. 1 is not a theoretical limitation although, experimentally, values in excess of one were not achieved. Work has continued with emphasis on higher temperature energy conversion. A number of promising materials have been discovered in which it appears that ZT 1 is realizable. These materials are divided into two classes: (1) the rare-earth chalcogenides which behave as itinerant highly-degenerate n-type semiconductors at room-temperature, and (2) the boron-rich borides, which exhibit p-type small-polaronic hopping conductivity.

The microstructure and properties of rapidly solidified, dispersion-strengthened NiAl

NASA Technical Reports Server (NTRS)

Jha, S. C.; Ray, R.

1990-01-01

An advanced rapid solidification technology for processing reactive and refractory alloys, utilized to produce large quantities of melt-spun filaments of NiAl, is presented. The melt-spun filaments are pulverized to fine particle sizes, and subsequently consolidated by hot extrusion or hot isostatic pressing. Rapid solidification process gives rise to very fine-grained microstructures. However, exposure to elevated temperature during hot consolidation leads to grain growth. Alloying agents such as borides, carbides, and tungsten can pin the grain boundaries and retard the grain growth. Various alloy compositions are investigated. The eventual goal is to utilize the hot-extruded and forged stock to grow single-crystal NiAl blades for advanced gas-turbine engine applications. Single-crystal NiAl, containing a uniform dispersion of carbide strengthening precipitates, is expected to lead to highly creep-resistant turbine blades, and is of considerable interest to the aerospace propulsion industry.

Fracture Strength of AlLiB14

NASA Astrophysics Data System (ADS)

Wan, L. F.; Beckman, S. P.

2012-10-01

The orthorhombic boride crystal family XYB14, where X and Y are metal atoms, plays a critical role in a unique class of superhard compounds, yet there have been no studies aimed at understanding the origin of the mechanical strength of this compound. We present here the results from a comprehensive investigation into the fracture strength of the archetypal AlLiB14 crystal. First principles, ab initio, methods are used to determine the ideal brittle cleavage strength for several high-symmetry orientations. The elastic tensor and the orientation-dependent Young’s modulus are calculated. From these results the lower bound fracture strength of AlLiB14 is predicted to be between 29 and 31 GPa, which is near the measured hardness reported in the literature. These results indicate that the intrinsic strength of AlLiB14 is limited by the interatomic B-B bonds that span between the B layers.

Silicon-on-Insulator Pin Diodes.

DTIC Science & Technology

1987-12-01

Thin (0.5 Micron) Silicon-on-Oxidized Silicon Fig. 2.8 SEM Photographs of CVD Silicon Dioxide on Aluminum 28 After 1500 0 C Anneal in Oxygen...silicon nitride over the silicon dioxide encapsu- -9- lation layer and by depositing the silicon dioxide with a plasma CVD process which uses N20 as...relief via thermal expansion matching varies lin- -27- A B Figure 2.8: SEM Photographs of CVD Silicon Dioxide on Aluminum after 15000 C Anneal in Oxygen

Silicon nitride/silicon carbide composite powders

DOEpatents

Dunmead, Stephen D.; Weimer, Alan W.; Carroll, Daniel F.; Eisman, Glenn A.; Cochran, Gene A.; Susnitzky, David W.; Beaman, Donald R.; Nilsen, Kevin J.

1996-06-11

Prepare silicon nitride-silicon carbide composite powders by carbothermal reduction of crystalline silica powder, carbon powder and, optionally, crystalline silicon nitride powder. The crystalline silicon carbide portion of the composite powders has a mean number diameter less than about 700 nanometers and contains nitrogen. The composite powders may be used to prepare sintered ceramic bodies and self-reinforced silicon nitride ceramic bodies.

Converting a carbon preform object to a silicon carbide object

NASA Technical Reports Server (NTRS)

Levin, Harry (Inventor)

1990-01-01

A process for converting in depth a carbon or graphite preform object to a silicon carbide object, silicon carbide/silicon object, silicon carbide/carbon-core object, or a silicon carbide/silicon/carbon-core object, by contacting it with silicon liquid and vapor over various lengths of contact time in a reaction chamber. In the process, a stream comprised of a silicon-containing precursor material in gaseous phase below the decomposition temperature of said gas and a coreactant, carrier or diluent gas such as hydrogen is passed through a hole within a high emissivity, thin, insulating septum into the reaction chamber above the melting point of silicon. The thin septum has one face below the decomposition temperature of the gas and an opposite face exposed to the reaction chamber. Thus, the precursor gas is decomposed directly to silicon in the reaction chamber. Any stream of decomposition gas and any unreacted precursor gas from the reaction chamber is removed. A carbon or graphite preform object placed in the reaction chamber is contacted with the silicon. The carbon or graphite preform object is recovered from the reactor chamber after it has been converted to a desired silicon carbide, silicon and carbon composition.

Mode-converting coupler for silicon-on-sapphire devices

NASA Astrophysics Data System (ADS)

Zlatanovic, S.; Offord, B. W.; Owen, M.; Shimabukuro, R.; Jacobs, E. W.

2015-02-01

Silicon-on-sapphire devices are attractive for the mid-infrared optical applications up to 5 microns due to the low loss of both silicon and sapphire in this wavelength band. Designing efficient couplers for silicon-on-sapphire devices presents a challenge due to a highly confined mode in silicon and large values of refractive index of both silicon and sapphire. Here, we present design, fabrication, and measurements of a mode-converting coupler for silicon-on-sapphire waveguides. We utilize a mode converter layout that consists of a large waveguide that is overlays a silicon inverse tapered waveguide. While this geometry was previously utilized for silicon-on-oxide devices, the novelty is in using materials that are compatible with the silicon-on-sapphire platform. In the current coupler the overlaying waveguide is made of silicon nitride. Silicon nitride is the material of choice because of the large index of refraction and low absorption from near-infrared to mid-infrared. The couplers were fabricated using a 0.25 micron silicon-on-sapphire process. The measured coupling loss from tapered lensed silica fibers to the silicon was 4.8dB/coupler. We will describe some challenges in fabrication process and discuss ways to overcome them.

Method for producing silicon nitride/silicon carbide composite

DOEpatents

Dunmead, Stephen D.; Weimer, Alan W.; Carroll, Daniel F.; Eisman, Glenn A.; Cochran, Gene A.; Susnitzky, David W.; Beaman, Donald R.; Nilsen, Kevin J.

1996-07-23

Silicon carbide/silicon nitride composites are prepared by carbothermal reduction of crystalline silica powder, carbon powder and optionally crsytalline silicon nitride powder. The crystalline silicon carbide portion of the composite has a mean number diameter less than about 700 nanometers and contains nitrogen.

Silicon-Based Anode and Method for Manufacturing the Same

NASA Technical Reports Server (NTRS)

Yushin, Gleb Nikolayevich (Inventor); Zdyrko, Bogdan (Inventor); Magasinski, Alexandre (Inventor); Luzinov, Igor (Inventor)

2017-01-01

A silicon-based anode comprising silicon, a carbon coating that coats the surface of the silicon, a polyvinyl acid that binds to at least a portion of the silicon, and vinylene carbonate that seals the interface between the silicon and the polyvinyl acid. Because of its properties, polyvinyl acid binders offer improved anode stability, tunable properties, and many other attractive attributes for silicon-based anodes, which enable the anode to withstand silicon cycles of expansion and contraction during charging and discharging.

N-type nano-silicon powders with ultra-low electrical resistivity as anode materials in lithium ion batteries

NASA Astrophysics Data System (ADS)

Yue, Zhihao; Zhou, Lang; Jin, Chenxin; Xu, Guojun; Liu, Liekai; Tang, Hao; Li, Xiaomin; Sun, Fugen; Huang, Haibin; Yuan, Jiren

2017-06-01

N-type silicon wafers with electrical resistivity of 0.001 Ω cm were ball-milled to powders and part of them was further mechanically crushed by sand-milling to smaller particles of nano-size. Both the sand-milled and ball-milled silicon powders were, respectively, mixed with graphite powder (silicon:graphite = 5:95, weight ratio) as anode materials for lithium ion batteries. Electrochemical measurements, including cycle and rate tests, present that anode using sand-milled silicon powder performed much better. The first discharge capacity of sand-milled silicon anode is 549.7 mAh/g and it is still up to 420.4 mAh/g after 100 cycles. Besides, the D50 of sand-milled silicon powder shows ten times smaller in particle size than that of ball-milled silicon powder, and they are 276 nm and 2.6 μm, respectively. In addition, there exist some amorphous silicon components in the sand-milled silicon powder excepting the multi-crystalline silicon, which is very different from the ball-milled silicon powder made up of multi-crystalline silicon only.

Formation of multiple levels of porous silicon for buried insulators and conductors in silicon device technologies

DOEpatents

Blewer, Robert S.; Gullinger, Terry R.; Kelly, Michael J.; Tsao, Sylvia S.

1991-01-01

A method of forming a multiple level porous silicon substrate for semiconductor integrated circuits including anodizing non-porous silicon layers of a multi-layer silicon substrate to form multiple levels of porous silicon. At least one porous silicon layer is then oxidized to form an insulating layer and at least one other layer of porous silicon beneath the insulating layer is metallized to form a buried conductive layer. Preferably the insulating layer and conductive layer are separated by an anodization barrier formed of non-porous silicon. By etching through the anodization barrier and subsequently forming a metallized conductive layer, a fully or partially insulated buried conductor may be fabricated under single crystal silicon.

Purified silicon production system

DOEpatents

Wang, Tihu; Ciszek, Theodore F.

2004-03-30

Method and apparatus for producing purified bulk silicon from highly impure metallurgical-grade silicon source material at atmospheric pressure. Method involves: (1) initially reacting iodine and metallurgical-grade silicon to create silicon tetraiodide and impurity iodide byproducts in a cold-wall reactor chamber; (2) isolating silicon tetraiodide from the impurity iodide byproducts and purifying it by distillation in a distillation chamber; and (3) transferring the purified silicon tetraiodide back to the cold-wall reactor chamber, reacting it with additional iodine and metallurgical-grade silicon to produce silicon diiodide and depositing the silicon diiodide onto a substrate within the cold-wall reactor chamber. The two chambers are at atmospheric pressure and the system is open to allow the introduction of additional source material and to remove and replace finished substrates.

Release and skin distribution of silicone-related compound(s) from a silicone gel sheet in vitro.

PubMed

Shigeki, S; Nobuoka, N; Murakami, T; Ikuta, Y

1999-01-01

The efficacy of topical silicone gel sheeting in prevention and/or reduction of keloids and hypertrophic scars is well recognized. In the present study, we reexamined the possible release of silicone-related compound(s) from a commercially available silicone gel sheet (Cica-Care, Smith and Nephew, Hull, England) in aqueous media in vitro. The silicone gel sheet was also applied on the excised skin surface to examine the possible distribution of silicone-related compounds into the skin in vitro. Silicone-related compounds were measured as silicon by an inductively coupled plasma-atomic emission spectrophotometer. When a piece of silicone gel sheet was placed in phosphate buffer solution (pH 3-9) at 37 degrees C for 7 days, the concentration of silicon in the medium increased with time, depending on the pH of the medium. This indicates that the released silicone-related compounds are water-soluble. When Cica-Care was applied on the surface of excised rat skin, human axilla skin and hypertrophic scars under hydrated conditions in vitro, silicon was detected in all skin samples. Greater distribution was observed in rat skin than in human axilla skin and hypertrophic scars. The release of silicone-related compounds from a silicone gel sheet (Cica-Care) and their distribution into the skin were demonstrated in vitro. Silicone-related compounds distributed into the skin may have pharmacological effects on the skin. Further investigation will be necessary to investigate in detail the action of silicone-related compounds on the proliferation of fibroblasts and excessive production of collagen.

Silicon carbide-free graphene growth on silicon for lithium-ion battery with high volumetric energy density

PubMed Central

Son, In Hyuk; Hwan Park, Jong; Kwon, Soonchul; Park, Seongyong; Rümmeli, Mark H.; Bachmatiuk, Alicja; Song, Hyun Jae; Ku, Junhwan; Choi, Jang Wook; Choi, Jae-man; Doo, Seok-Gwang; Chang, Hyuk

2015-01-01

Silicon is receiving discernable attention as an active material for next generation lithium-ion battery anodes because of its unparalleled gravimetric capacity. However, the large volume change of silicon over charge–discharge cycles weakens its competitiveness in the volumetric energy density and cycle life. Here we report direct graphene growth over silicon nanoparticles without silicon carbide formation. The graphene layers anchored onto the silicon surface accommodate the volume expansion of silicon via a sliding process between adjacent graphene layers. When paired with a commercial lithium cobalt oxide cathode, the silicon carbide-free graphene coating allows the full cell to reach volumetric energy densities of 972 and 700 Wh l−1 at first and 200th cycle, respectively, 1.8 and 1.5 times higher than those of current commercial lithium-ion batteries. This observation suggests that two-dimensional layered structure of graphene and its silicon carbide-free integration with silicon can serve as a prototype in advancing silicon anodes to commercially viable technology. PMID:26109057

Method for producing silicon thin-film transistors with enhanced forward current drive

DOEpatents

Weiner, K.H.

1998-06-30

A method is disclosed for fabricating amorphous silicon thin film transistors (TFTs) with a polycrystalline silicon surface channel region for enhanced forward current drive. The method is particularly adapted for producing top-gate silicon TFTs which have the advantages of both amorphous and polycrystalline silicon TFTs, but without problem of leakage current of polycrystalline silicon TFTs. This is accomplished by selectively crystallizing a selected region of the amorphous silicon, using a pulsed excimer laser, to create a thin polycrystalline silicon layer at the silicon/gate-insulator surface. The thus created polysilicon layer has an increased mobility compared to the amorphous silicon during forward device operation so that increased drive currents are achieved. In reverse operation the polysilicon layer is relatively thin compared to the amorphous silicon, so that the transistor exhibits the low leakage currents inherent to amorphous silicon. A device made by this method can be used, for example, as a pixel switch in an active-matrix liquid crystal display to improve display refresh rates. 1 fig.

Method for producing silicon thin-film transistors with enhanced forward current drive

DOEpatents

Weiner, Kurt H.

1998-01-01

A method for fabricating amorphous silicon thin film transistors (TFTs) with a polycrystalline silicon surface channel region for enhanced forward current drive. The method is particularly adapted for producing top-gate silicon TFTs which have the advantages of both amorphous and polycrystalline silicon TFTs, but without problem of leakage current of polycrystalline silicon TFTs. This is accomplished by selectively crystallizing a selected region of the amorphous silicon, using a pulsed excimer laser, to create a thin polycrystalline silicon layer at the silicon/gate-insulator surface. The thus created polysilicon layer has an increased mobility compared to the amorphous silicon during forward device operation so that increased drive currents are achieved. In reverse operation the polysilicon layer is relatively thin compared to the amorphous silicon, so that the transistor exhibits the low leakage currents inherent to amorphous silicon. A device made by this method can be used, for example, as a pixel switch in an active-matrix liquid crystal display to improve display refresh rates.

Silicon nitride/silicon carbide composite densified materials prepared using composite powders

DOEpatents

Dunmead, S.D.; Weimer, A.W.; Carroll, D.F.; Eisman, G.A.; Cochran, G.A.; Susnitzky, D.W.; Beaman, D.R.; Nilsen, K.J.

1997-07-01

Prepare silicon nitride-silicon carbide composite powders by carbothermal reduction of crystalline silica powder, carbon powder and, optionally, crystalline silicon nitride powder. The crystalline silicon carbide portion of the composite powders has a mean number diameter less than about 700 nanometers and contains nitrogen. The composite powders may be used to prepare sintered ceramic bodies and self-reinforced silicon nitride ceramic bodies.

Rapid Solid-State Metathesis Routes to Nanostructured Silicon-Germainum

NASA Technical Reports Server (NTRS)

Rodriguez, Marc (Inventor); Kaner, Richard B. (Inventor); Bux, Sabah K. (Inventor); Fleurial, Jean-Pierre (Inventor)

2014-01-01

Methods for producing nanostructured silicon and silicon-germanium via solid state metathesis (SSM). The method of forming nanostructured silicon comprises the steps of combining a stoichiometric mixture of silicon tetraiodide (SiI4) and an alkaline earth metal silicide into a homogeneous powder, and initating the reaction between the silicon tetraiodide (SiI4) with the alkaline earth metal silicide. The method of forming nanostructured silicon-germanium comprises the steps of combining a stoichiometric mixture of silicon tetraiodide (SiI4) and a germanium based precursor into a homogeneous powder, and initiating the reaction between the silicon tetraiodide (SiI4) with the germanium based precursors.

Silicone metalization

DOEpatents

Maghribi, Mariam N [Livermore, CA; Krulevitch, Peter [Pleasanton, CA; Hamilton, Julie [Tracy, CA

2006-12-05

A system for providing metal features on silicone comprising providing a silicone layer on a matrix and providing a metal layer on the silicone layer. An electronic apparatus can be produced by the system. The electronic apparatus comprises a silicone body and metal features on the silicone body that provide an electronic device.

Silicone metalization

DOEpatents

Maghribi, Mariam N.; Krulevitch, Peter; Hamilton, Julie

2008-12-09

A system for providing metal features on silicone comprising providing a silicone layer on a matrix and providing a metal layer on the silicone layer. An electronic apparatus can be produced by the system. The electronic apparatus comprises a silicone body and metal features on the silicone body that provide an electronic device.

Silicon-on-ceramic process: Silicon sheet growth and device development for the large-area silicon sheet task of the low-cost solar array project

NASA Technical Reports Server (NTRS)

Whitehead, A. B.; Zook, J. D.; Grung, B. L.; Heaps, J. D.; Schmit, F.; Schuldt, S. B.; Chapman, P. W.

1981-01-01

The technical feasibility of producing solar cell quality sheet silicon to meet the DOE 1986 cost goal of 70 cents/watt was investigated. The silicon on ceramic approach is to coat a low cost ceramic substrate with large grain polycrystalline silicon by unidirectional solidification of molten silicon. Results and accomplishments are summarized.

Colloidal characterization of ultrafine silicon carbide and silicon nitride powders

NASA Technical Reports Server (NTRS)

Whitman, Pamela K.; Feke, Donald L.

1986-01-01

The effects of various powder treatment strategies on the colloid chemistry of aqueous dispersions of silicon carbide and silicon nitride are examined using a surface titration methodology. Pretreatments are used to differentiate between the true surface chemistry of the powders and artifacts resulting from exposure history. Silicon nitride powders require more extensive pretreatment to reveal consistent surface chemistry than do silicon carbide powders. As measured by titration, the degree of proton adsorption from the suspending fluid by pretreated silicon nitride and silicon carbide powders can both be made similar to that of silica.

Process for forming silicon carbide films and microcomponents

DOEpatents

Hamza, A.V.; Balooch, M.; Moalem, M.

1999-01-19

Silicon carbide films and microcomponents are grown on silicon substrates at surface temperatures between 900 K and 1700 K via C{sub 60} precursors in a hydrogen-free environment. Selective crystalline silicon carbide growth can be achieved on patterned silicon-silicon oxide samples. Patterned SiC films are produced by making use of the high reaction probability of C{sub 60} with silicon at surface temperatures greater than 900 K and the negligible reaction probability for C{sub 60} on silicon dioxide at surface temperatures less than 1250 K. 5 figs.

Process for forming silicon carbide films and microcomponents

DOEpatents

Hamza, Alex V.; Balooch, Mehdi; Moalem, Mehran

1999-01-01

Silicon carbide films and microcomponents are grown on silicon substrates at surface temperatures between 900 K and 1700 K via C.sub.60 precursors in a hydrogen-free environment. Selective crystalline silicon carbide growth can be achieved on patterned silicon-silicon oxide samples. Patterned SiC films are produced by making use of the high reaction probability of C.sub.60 with silicon at surface temperatures greater than 900 K and the negligible reaction probability for C.sub.60 on silicon dioxide at surface temperatures less than 1250 K.

Purification and deposition of silicon by an iodide disproportionation reaction

DOEpatents

Wang, Tihu; Ciszek, Theodore F.

2002-01-01

Method and apparatus for producing purified bulk silicon from highly impure metallurgical-grade silicon source material at atmospheric pressure. Method involves: (1) initially reacting iodine and metallurgical-grade silicon to create silicon tetraiodide and impurity iodide byproducts in a cold-wall reactor chamber; (2) isolating silicon tetraiodide from the impurity iodide byproducts and purifying it by distillation in a distillation chamber; and (3) transferring the purified silicon tetraiodide back to the cold-wall reactor chamber, reacting it with additional iodine and metallurgical-grade silicon to produce silicon diiodide and depositing the silicon diiodide onto a substrate within the cold-wall reactor chamber. The two chambers are at atmospheric pressure and the system is open to allow the introduction of additional source material and to remove and replace finished substrates.

Increased longitudinal growth in rats on a silicon-depleted diet☆

PubMed Central

Jugdaohsingh, Ravin; Calomme, Mario R.; Robinson, Karen; Nielsen, Forrest; Anderson, Simon H.C.; D'Haese, Patrick; Geusens, Piet; Loveridge, Nigel; Thompson, Richard P.H.; Powell, Jonathan J.

2008-01-01

Silicon-deficiency studies in growing animals in the early 1970s reported stunted growth and profound defects in bone and other connective tissues. However, more recent attempts to replicate these findings have found mild alterations in bone metabolism without any adverse health effects. Thus the biological role of silicon remains unknown. Using a specifically formulated silicon-depleted diet and modern methods for silicon analysis and assessment of skeletal development, we undertook, through international collaboration between silicon researchers, an extensive study of long-term silicon depletion on skeletal development in an animal. 21-day old female Sprague–Dawley rats (n = 20) were fed a silicon-depleted diet (3.2 µg Si/g feed) for 26 weeks and their growth and skeletal development were compared with identical rats (n = 10) on the same diet but with silicon added as Si(OH)4 to their drinking water (53.2 µg Si/g water); total silicon intakes were 24 times different. A third group of rats, receiving a standard rodent stock feed (322 µg Si/g feed) and tap water (5 µg Si/g water), served as a reference group for optimal growth. A series of anthropometric and bone quality measures were undertaken during and following the study. Fasting serum silicon concentrations and especially urinary silicon excretion were significantly lower in the silicon-deprived group compared to the supplemented group (P = 0.03 and 0.004, respectively). Tibia and soft-tissue silicon contents did not differ between the two groups, but tibia silicon levels were significantly lower compared to the reference group (P < 0.0001). Outward adverse health effects were not observed in the silicon-deprived group. However, body lengths from week 18 onwards (P < 0.05) and bone lengths at necropsy (P ≤ 0.002) were longer in this group. Moreover, these measures correlated inversely with serum silicon concentrations (P ≤ 0.02). A reduction in bone growth plate thickness and an apparent increase in chondrocyte density were also observed in the silicon-deprived animals. No other differences were observed between the two groups, except for tibia phosphorus concentrations, which were lower in the silicon-deprived animals (P = 0.0003). Thus in this study we were unable to reproduce the profound deficiency state reported in rats and chicks in the early 1970s. Indeed, although silicon intake and circulating fasting serum levels differed between the silicon-deprived and silicon-supplemented animals, tibia and soft-tissue levels did not and may explain the lack of difference in bone quality and bone markers (except serum CTx) between these two groups. Markedly higher tibia silicon levels in the reference group and nutritional differences between the formulated low-Si and reference diets suggest that one or more co-factors may be absent from the low-Si diet that affect silicon incorporation into bone. However, evidence for urinary silicon conservation (to maintain tissue levels), changes in bone/body lengths, bone calcium:phosphorus ratio and differences at the growth plate with silicon deprivation are all novel and deserve further study. These results suggest that rats actively maintain body silicon levels via urinary conservation, but the low circulating serum silicon levels during silicon deficiency result in inhibition of growth plate closure and increased longitudinal growth. Silicon-responsive genes and Si transporters are being investigated in the kidneys of these rats. PMID:18550464

Pseudo-direct bandgap transitions in silicon nanocrystals: effects on optoelectronics and thermoelectrics

NASA Astrophysics Data System (ADS)

Singh, Vivek; Yu, Yixuan; Sun, Qi-C.; Korgel, Brian; Nagpal, Prashant

2014-11-01

While silicon nanostructures are extensively used in electronics, the indirect bandgap of silicon poses challenges for optoelectronic applications like photovoltaics and light emitting diodes (LEDs). Here, we show that size-dependent pseudo-direct bandgap transitions in silicon nanocrystals dominate the interactions between (photoexcited) charge carriers and phonons, and hence the optoelectronic properties of silicon nanocrystals. Direct measurements of the electronic density of states (DOS) for different sized silicon nanocrystals reveal that these pseudo-direct transitions, likely arising from the nanocrystal surface, can couple with the quantum-confined silicon states. Moreover, we demonstrate that since these transitions determine the interactions of charge carriers with phonons, they change the light emission, absorption, charge carrier diffusion and phonon drag (Seebeck coefficient) in nanoscaled silicon semiconductors. Therefore, these results can have important implications for the design of optoelectronics and thermoelectric devices based on nanostructured silicon.While silicon nanostructures are extensively used in electronics, the indirect bandgap of silicon poses challenges for optoelectronic applications like photovoltaics and light emitting diodes (LEDs). Here, we show that size-dependent pseudo-direct bandgap transitions in silicon nanocrystals dominate the interactions between (photoexcited) charge carriers and phonons, and hence the optoelectronic properties of silicon nanocrystals. Direct measurements of the electronic density of states (DOS) for different sized silicon nanocrystals reveal that these pseudo-direct transitions, likely arising from the nanocrystal surface, can couple with the quantum-confined silicon states. Moreover, we demonstrate that since these transitions determine the interactions of charge carriers with phonons, they change the light emission, absorption, charge carrier diffusion and phonon drag (Seebeck coefficient) in nanoscaled silicon semiconductors. Therefore, these results can have important implications for the design of optoelectronics and thermoelectric devices based on nanostructured silicon. Electronic supplementary information (ESI) available. See DOI: 10.1039/c4nr04688a

(Pt1-xCux)3Cu2B and Pt9Cu3B5, the first examples of copper platinum borides. Observation of superconductivity in a novel boron filled β-Mn-type compound

NASA Astrophysics Data System (ADS)

Salamakha, Leonid P.; Sologub, Oksana; Stöger, Berthold; Michor, Herwig; Bauer, Ernst; Rogl, Peter F.

2015-09-01

New ternary copper platinum borides have been synthesized by arc melting of pure elements followed by annealing at 600 °C. The structures have been studied by X-ray single crystal and powder diffraction. (Pt1-xCux)3Cu2B (x=0.33) forms a B-filled β-Mn-type structure (space group P4132; a=0.6671(1) nm). Cu atoms are distributed preferentially on the 8c atom sites, whereas the 12d site is randomly occupied by Pt and Cu atoms (0.670(4) Pt±0.330(4) Cu). Boron is located in octahedral voids of the parent β-Mn-type structure. Pt9Cu3B5 (space group P-62m; a=0.9048(3) nm, c=0.2908(1) nm) adopts the Pt9Zn3B5-δ-type structure. It has a columnar architecture along the short translation vector exhibiting three kinds of [Pt6] trigonal prism columns (boron filled, boron semi-filled and empty) and Pt channels with a pentagonal cross section filled with Cu atoms. The striking structural feature is a [Pt6] cluster in form of an empty trigonal prism at the origin of the unit cell, which is surrounded by coupled [BPt6] and [Pt6] trigonal prisms, rotated perpendicularly to the central one. There is no B-B contact as well as Cu-B contact in the structure. The relationships of Pt9Cu3B5 structure with the structure of Ti1+xOs2-xRuB2 as well as with the structure families of metal sulfides and aluminides have been elucidated. (Pt1-xCux)3Cu2B (x=0.3) (B-filled β-Mn-type structure) is a bulk superconductor with a transition temperature of about 2.06 K and an upper critical field μ0HC2(0)WHH of 1.2 T, whereas no superconducting transition has been observed up to 0.3 K in Pt9Cu3B5 (Pt9Zn3B5-δ-type structure) from electrical resistivity measurements.

Silicon surface passivation by silicon nitride deposition

NASA Technical Reports Server (NTRS)

Olsen, L. C.

1984-01-01

Silicon nitride deposition was studied as a method of passivation for silicon solar cell surfaces. The following three objectives were the thrust of the research: (1) the use of pecvd silicon nitride for passivation of silicon surfaces; (2) measurement techniques for surface recombination velocity; and (3) the importance of surface passivation to high efficiency solar cells.

Fabrication and characterization of silicon quantum dots in Si-rich silicon carbide films.

PubMed

Chang, Geng-Rong; Ma, Fei; Ma, Dayan; Xu, Kewei

2011-12-01

Amorphous Si-rich silicon carbide films were prepared by magnetron co-sputtering and subsequently annealed at 900-1100 degrees C. After annealing at 1100 degrees C, this configuration of silicon quantum dots embedded in amorphous silicon carbide formed. X-ray photoelectron spectroscopy was used to study the chemical modulation of the films. The formation and orientation of silicon quantum dots were characterized by glancing angle X-ray diffraction, which shows that the ratio of silicon and carbon significantly influences the species of quantum dots. High-resolution transmission electron microscopy investigations directly demonstrated that the formation of silicon quantum dots is heavily dependent on the annealing temperatures and the ratio of silicon and carbide. Only the temperature of about 1100 degrees C is enough for the formation of high-density and small-size silicon quantum dots due to phase separation and thermal crystallization. Deconvolution of the first order Raman spectra shows the existence of a lower frequency peak in the range 500-505 cm(-1) corresponding to silicon quantum dots with different atom ratio of silicon and carbon.

Silicon material technology status. [assessment for electronic and photovoltaic applications

NASA Technical Reports Server (NTRS)

Lutwack, R.

1983-01-01

Silicon has been the basic element for the electronic and photovoltaic industries. The use of silicon as the primary element for terrestrial photovoltaic solar arrays is projected to continue. The reasons for this projection are related to the maturity of silicon technology, the ready availability of extremely pure silicon, the performance of silicon solar cells, and the considerable present investment in technology and manufacturing facilities. The technologies for producing semiconductor grade silicon and, to a lesser extent, refined metallurgical grade silicon are considered. It is pointed out that nearly all of the semiconductor grade silicon is produced by processes based on the Siemens deposition reactor, a technology developed 26 years ago. The state-of-the-art for producing silicon by this process is discussed. It is expected that efforts to reduce polysilicon process costs will continue.

Enhanced Raman scattering in porous silicon grating.

PubMed

Wang, Jiajia; Jia, Zhenhong; Lv, Changwu

2018-03-19

The enhancement of Raman signal on monocrystalline silicon gratings with varying groove depths and on porous silicon grating were studied for a highly sensitive surface enhanced Raman scattering (SERS) response. In the experiment conducted, porous silicon gratings were fabricated. Silver nanoparticles (Ag NPs) were then deposited on the porous silicon grating to enhance the Raman signal of the detective objects. Results show that the enhancement of Raman signal on silicon grating improved when groove depth increased. The enhanced performance of Raman signal on porous silicon grating was also further improved. The Rhodamine SERS response based on Ag NPs/ porous silicon grating substrates was enhanced relative to the SERS response on Ag NPs/ porous silicon substrates. Ag NPs / porous silicon grating SERS substrate system achieved a highly sensitive SERS response due to the coupling of various Raman enhancement factors.

Process for forming retrograde profiles in silicon

DOEpatents

Weiner, K.H.; Sigmon, T.W.

1996-10-15

A process is disclosed for forming retrograde and oscillatory profiles in crystalline and polycrystalline silicon. The process consisting of introducing an n- or p-type dopant into the silicon, or using prior doped silicon, then exposing the silicon to multiple pulses of a high-intensity laser or other appropriate energy source that melts the silicon for short time duration. Depending on the number of laser pulses directed at the silicon, retrograde profiles with peak/surface dopant concentrations which vary are produced. The laser treatment can be performed in air or in vacuum, with the silicon at room temperature or heated to a selected temperature.

Dry etch method for texturing silicon and device

DOE Office of Scientific and Technical Information (OSTI.GOV)

Gershon, Talia S.; Haight, Richard A.; Kim, Jeehwan

2017-07-25

A method for texturing silicon includes loading a silicon wafer into a vacuum chamber, heating the silicon wafer and thermal cracking a gas to generate cracked sulfur species. The silicon wafer is exposed to the cracked sulfur species for a time duration in accordance with a texture characteristic needed for a surface of the silicon wafer.

Growth of silicon carbide crystals on a seed while pulling silicon crystals from a melt

NASA Technical Reports Server (NTRS)

Ciszek, T. F.; Schwuttke, G. H. (Inventor)

1979-01-01

A saturated solution of silicon and an element such as carbon having a segregation coefficient less than unity is formed by placing a solid piece of carbon in a body of molten silicon having a temperature differential decreasing toward the surface. A silicon carbide seed crystal is disposed on a holder beneath the surface of the molten silicon. As a rod or ribbon of silicon is slowly pulled from the melt, a supersaturated solution of carbon in silicon is formed in the vicinity of the seed crystal. Excess carbon is emitted from the solution in the form of silicon carbide which crystallizes on the seed crystal held in the cool region of the melt.

Improved toughness of silicon carbide

NASA Technical Reports Server (NTRS)

Palm, J. A.

1976-01-01

Impact energy absorbing layers (EALs) comprised of partially densified silicon carbide were formed in situ on fully sinterable silicon carbide substrates. After final sintering, duplex silicon carbide structures resulted which were comprised of a fully sintered, high density silicon carbide substrate or core, overlayed with an EAL of partially sintered silicon carbide integrally bonded to its core member. Thermal cycling tests proved such structures to be moderately resistant to oxidation and highly resistant to thermal shock stresses. The strength of the developed structures in some cases exceeded but essentially it remained the same as the fully sintered silicon carbide without the EAL. Ballistic impact tests indicated that substantial improvements in the toughness of sintered silicon carbide were achieved by the use of the partially densified silicon carbide EALs.

A general classification of silicon utilizing organisms

NASA Astrophysics Data System (ADS)

Das, P.; Das, S.

2010-12-01

Silicon utilizing organisms may be defined as organisms with high silicon content (≥ 1% dry weight) and they can metabolize silicon with or without demonstrable silicon transporter genes (SIT) in them(Das,2010). Silicon is the second most abundant element in the lithosphere (27.70%) and it is as important as phosphorus and magnesium (0.03%) in the biota. Hydrated silica represents the second most abundant biogenic mineral after carbonate minerals. Silicon is accumulated and metabolized by some prokaryotes, and Si compounds can stimulate the growth of a range of fungi. It is well known that Si is essential for diatoms. In mammals, Si is considered an essential trace element, required in bone, cartilage and connective tissue formation, enzymatic activities and other metabolic processes. Silicon was suggested to act as a phosphoprotein effector in bone. In mammals, Si is also reported to positively influence the immune system and to be required for lymphocyte proliferation. The aqueous chemistry of Si is dominated by silicic acid at biological pH ranges. Monosilicic acid can form stable complexes with organic hydroxy-containing molecules . Biosilica also has been identified associated with various biomolecules including proteins and carbohydrates. There are main seven groups of silicon utilizing organisms belonging to Gram positive bacteria, algae, protozoa, sponges, fungi, lichens, and monocotyledon plants. In each group again all the members are not silicon utilizing organisms, thus selective members in each group are further classified depending their degree of silicon utilization. Important silicon utilizing bacteria are Mycobacteria, Nocardia, Streptomyces, Staphylococcus, Bacillus, Lactobacillus spp. etc., Important silicon utilizing algae are Centrobacillariophyceae, Pennatibacillariophyceae and Chrysophyceae. Many protozoa belonging to Heterokonta, Choanoflagellida, Actinopoda are well known silicon utilizing microorganisms. Hexactinellida ( glass sponges), Demospongiae and Sclerospongiae are important silicon utilizing sponges. Fungi like Aspergillus, Penicillium, Rhizopus etc. are also silicon utilizing. Candida spp. also belong to silicon utilizing organisms as they are also frequently found in sputum in silicotuberculosis cases. Many monocotyledon plants belonging to Pteridophyta, Magnoliophyta etc. are also well known silicon utilizing organisms. Almost all lichens belong to the group of silicon utilizing organisms.

Analysis of thin baked-on silicone layers by FTIR and 3D-Laser Scanning Microscopy.

PubMed

Funke, Stefanie; Matilainen, Julia; Nalenz, Heiko; Bechtold-Peters, Karoline; Mahler, Hanns-Christian; Friess, Wolfgang

2015-10-01

Pre-filled syringes (PFS) and auto-injection devices with cartridges are increasingly used for parenteral administration. To assure functionality, silicone oil is applied to the inner surface of the glass barrel. Silicone oil migration into the product can be minimized by applying a thin but sufficient layer of silicone oil emulsion followed by thermal bake-on versus spraying-on silicone oil. Silicone layers thicker than 100nm resulting from regular spray-on siliconization can be characterized using interferometric profilometers. However, the analysis of thin silicone layers generated by bake-on siliconization is more challenging. In this paper, we have evaluated Fourier transform infrared (FTIR) spectroscopy after solvent extraction and a new 3D-Laser Scanning Microscopy (3D-LSM) to overcome this challenge. A multi-step solvent extraction and subsequent FTIR spectroscopy enabled to quantify baked-on silicone levels as low as 21-325μg per 5mL cartridge. 3D-LSM was successfully established to visualize and measure baked-on silicone layers as thin as 10nm. 3D-LSM was additionally used to analyze the silicone oil distribution within cartridges at such low levels. Both methods provided new, highly valuable insights to characterize the siliconization after processing, in order to achieve functionality. Copyright © 2015 Elsevier B.V. All rights reserved.

Method for fabricating an ultra-low expansion mask blank having a crystalline silicon layer

DOEpatents

Cardinale, Gregory F.

2002-01-01

A method for fabricating masks for extreme ultraviolet lithography (EUVL) using Ultra-Low Expansion (ULE) substrates and crystalline silicon. ULE substrates are required for the necessary thermal management in EUVL mask blanks, and defect detection and classification have been obtained using crystalline silicon substrate materials. Thus, this method provides the advantages for both the ULE substrate and the crystalline silicon in an Extreme Ultra-Violet (EUV) mask blank. The method is carried out by bonding a crystalline silicon wafer or member to a ULE wafer or substrate and thinning the silicon to produce a 5-10 .mu.m thick crystalline silicon layer on the surface of the ULE substrate. The thinning of the crystalline silicon may be carried out, for example, by chemical mechanical polishing and if necessary or desired, oxidizing the silicon followed by etching to the desired thickness of the silicon.

Review Application of Nanostructured Black Silicon

NASA Astrophysics Data System (ADS)

Lv, Jian; Zhang, Ting; Zhang, Peng; Zhao, Yingchun; Li, Shibin

2018-04-01

As a widely used semiconductor material, silicon has been extensively used in many areas, such as photodiode, photodetector, and photovoltaic devices. However, the high surface reflectance and large bandgap of traditional bulk silicon restrict the full use of the spectrum. To solve this problem, many methods have been developed. Among them, the surface nanostructured silicon, namely black silicon, is the most efficient and widely used. Due to its high absorption in the wide range from UV-visible to infrared, black silicon is very attractive for using as sensitive layer of photodiodes, photodetector, solar cells, field emission, luminescence, and other photoelectric devices. Intensive study has been performed to understand the enhanced absorption of black silicon as well as the response extended to infrared spectrum range. In this paper, the application of black silicon is systematically reviewed. The limitations and challenges of black silicon material are also discussed. This article will provide a meaningful introduction to black silicon and its unique properties.

Study on Silicon Microstructure Processing Technology Based on Porous Silicon

NASA Astrophysics Data System (ADS)

Shang, Yingqi; Zhang, Linchao; Qi, Hong; Wu, Yalin; Zhang, Yan; Chen, Jing

2018-03-01

Aiming at the heterogeneity of micro - sealed cavity in silicon microstructure processing technology, the technique of preparing micro - sealed cavity of porous silicon is proposed. The effects of different solutions, different substrate doping concentrations, different current densities, and different etching times on the rate, porosity, thickness and morphology of the prepared porous silicon were studied. The porous silicon was prepared by different process parameters and the prepared porous silicon was tested and analyzed. For the test results, optimize the process parameters and experiments. The experimental results show that the porous silicon can be controlled by optimizing the parameters of the etching solution and the doping concentration of the substrate, and the preparation of porous silicon with different porosity can be realized by different doping concentration, so as to realize the preparation of silicon micro-sealed cavity, to solve the sensor sensitive micro-sealed cavity structure heterogeneous problem, greatly increasing the application of the sensor.

Silica substrate or portion formed from oxidation of monocrystalline silicon

DOEpatents

Matzke, Carolyn M.; Rieger, Dennis J.; Ellis, Robert V.

2003-07-15

A method is disclosed for forming an inclusion-free silica substrate using a monocrystalline silicon substrate as the starting material and oxidizing the silicon substrate to convert it entirely to silica. The oxidation process is performed from both major surfaces of the silicon substrate using a conventional high-pressure oxidation system. The resulting product is an amorphous silica substrate which is expected to have superior etching characteristics for microfabrication than conventional fused silica substrates. The present invention can also be used to convert only a portion of a monocrystalline silicon substrate to silica by masking the silicon substrate and locally thinning a portion the silicon substrate prior to converting the silicon portion entirely to silica. In this case, the silica formed by oxidizing the thinned portion of the silicon substrate can be used, for example, as a window to provide optical access through the silicon substrate.

Femtosecond laser fabricating black silicon in alkaline solution

NASA Astrophysics Data System (ADS)

Meng, Jiao; Song, Haiying; Li, Xiaoli; Liu, Shibing

2015-03-01

An efficient approach for enhancing the surface antireflection is proposed, in which a black silicon is fabricated by a femtosecond laser in alkaline solution. In the experiment, 2 wt% NaOH solution is formulated at room temperature (22 ± 1 °C). Then, a polished silicon is scanned via femtosecond laser irradiation in 2 wt% NaOH solution. Jungle-like microstructures on the black silicon surface are characterized using an atomic force microscopy. The reflectance of the black silicon is measured at the wavelengths ranging from 400 to 750 nm. Compared to the polished silicon, the black silicon can significantly suppress the optical reflection throughout the visible region (<5 %). Meanwhile, we also investigated the factors of the black silicon, including the femtosecond laser pulse energy and the scanning speed. This method is simple and effective to acquire the black silicon, which probably has a large advantage in fast and cost-effective black silicon fabrication.

Crystallization of amorphous silicon thin films deposited by PECVD on nickel-metalized porous silicon.

PubMed

Ben Slama, Sonia; Hajji, Messaoud; Ezzaouia, Hatem

2012-08-17

Porous silicon layers were elaborated by electrochemical etching of heavily doped p-type silicon substrates. Metallization of porous silicon was carried out by immersion of substrates in diluted aqueous solution of nickel. Amorphous silicon thin films were deposited by plasma-enhanced chemical vapor deposition on metalized porous layers. Deposited amorphous thin films were crystallized under vacuum at 750°C. Obtained results from structural, optical, and electrical characterizations show that thermal annealing of amorphous silicon deposited on Ni-metalized porous silicon leads to an enhancement in the crystalline quality and physical properties of the silicon thin films. The improvement in the quality of the film is due to the crystallization of the amorphous film during annealing. This simple and easy method can be used to produce silicon thin films with high quality suitable for thin film solar cell applications.

Crystallization of amorphous silicon thin films deposited by PECVD on nickel-metalized porous silicon

PubMed Central

2012-01-01

Porous silicon layers were elaborated by electrochemical etching of heavily doped p-type silicon substrates. Metallization of porous silicon was carried out by immersion of substrates in diluted aqueous solution of nickel. Amorphous silicon thin films were deposited by plasma-enhanced chemical vapor deposition on metalized porous layers. Deposited amorphous thin films were crystallized under vacuum at 750°C. Obtained results from structural, optical, and electrical characterizations show that thermal annealing of amorphous silicon deposited on Ni-metalized porous silicon leads to an enhancement in the crystalline quality and physical properties of the silicon thin films. The improvement in the quality of the film is due to the crystallization of the amorphous film during annealing. This simple and easy method can be used to produce silicon thin films with high quality suitable for thin film solar cell applications. PMID:22901341

Friction and wear behavior of single-crystal silicon carbide in contact with titanium

NASA Technical Reports Server (NTRS)

Miyoshi, K.; Buckley, D. H.

1977-01-01

Sliding friction experiments were conducted with single crystal silicon carbide in sliding contact with titanium. Results indicate that the friction coefficient is greater in vacuum than in argon and that this is due to the greater adhesion or adhesive transfer in vacuum. Thin films of silicon carbide transferred to titanium also adhered to silicon carbide both in argon at atmospheric pressure and in high vacuum. Cohesive bonds fractured on both the silicon carbide and titanium surfaces. The wear debris of silicon carbide created by fracture plowed the silicon carbide surface in a plastic manner. The friction characteristics of titanium in contact with silicon carbide were sensitive to the surface roughness of silicon carbide, and the friction coefficients were higher for a rough surface of silicon carbide than for a smooth one. The difference in friction results was due to plastic deformation (plowing of titanium).

Porous silicon-based direct hydrogen sulphide fuel cells.

PubMed

Dzhafarov, T D; Yuksel, S Aydin

2011-10-01

In this paper, the use of Au/porous silicon/Silicon Schottky type structure, as a direct hydrogen sulphide fuel cell is demonstrated. The porous silicon filled with hydrochlorid acid was developed as a proton conduction membrane. The Au/Porous Silicon/Silicon cells were fabricated by first creating the porous silicon layer in single-crystalline Si using the anodic etching under illumination and then deposition Au catalyst layer onto the porous silicon. Using 80 mM H2S solution as fuel the open circuit voltage of 0.4 V was obtained and maximum power density of 30 W/m2 at room temperature was achieved. These results demonstrate that the Au/Porous Silicon/Silicon direct hydrogen sulphide fuel cell which uses H2S:dH2O solution as fuel and operates at room temperature can be considered as the most promising type of low cost fuel cell for small power-supply units.

Studies of the Crystallization Process of Aluminum-Silicon Alloys Using a High Temperature Microscope. Thesis

NASA Technical Reports Server (NTRS)

Justi, S.

1985-01-01

It is shown that primary silicon crystals grow polyhedral in super-eutectic AlSi melts and that phosphorus additives to the melt confirm the strong seeding capacity. Primary silicon exhibits strong dendritic seeding effects in eutectic silicon phases of various silicon alloys, whereas primary aluminum does not possess this capacity. Sodium addition also produces a dendritic silicon network growth in the interior of the sample that is attributed to the slower silicon diffusion velocity during cooling.

Silicon quantum dots for energetic material applications

NASA Astrophysics Data System (ADS)

Adams, Sarah K.; Piekiel, Nicholas W.; Ervin, Matthew H.; Morris, Christopher J.

2018-06-01

In its history as an energetic material, porous silicon has demonstrated flame speeds in excess of 3 km s-1, tunable combustion behavior, and high energy output, which in theory makes it a very attractive energetic system. In practice, its application within the field is limited by porous silicon's typical substrate-adhered form and caustic chemical processing requirements that limit how and when porous silicon is made. In this work, we have relieved porous silicon of these constraints by creating reactive silicon quantum dots from free-standing porous silicon films. The resulting material is composed of crystalline silicon nanoparticles with diameters as small as 2 nm that retain the chemical properties of the original films including the SiH2 termination layer. The fabricated silicon particles were characterized using FTIR Spectroscopy, TEM, and EDS for determining the size and the chemical composition. For testing as an energetic material fuel, porous silicon was mixed with an oft used oxidizer, sodium perchlorate. During open-channel combustion tests, silicon quantum dots mixed with sodium perchlorate demonstrated flame speeds over 2.5 km s-1, while bomb calorimetry tests showed an average heat of combustion of 7.4 kJ g-1. These results demonstrate the ability to retain the porous silicon material properties that allow for highly energetic material reactions to occur, despite the additional processing steps to create silicon quantum dots. This opens the door for the use of porous silicon in the bulk of the energetic material application space, much of which was previously limited due to the substrate-attached nature of typical porous silicon.

Silicon on ceramic process. Silicon sheet growth development for the large-area silicon sheet task of the low-cost silicon solar array project

NASA Technical Reports Server (NTRS)

Zook, J. D.; Heaps, J. D.; Maciolek, R. B.; Koepke, B. G.; Butter, C. D.; Schuldt, S. B.

1977-01-01

The technical and economic feasibility of producing solar-cell-quality sheet silicon was investigated. The sheets were made by coating one surface of carbonized ceramic substrates with a thin layer of large-grain polycrystalline silicon from the melt. Significant progress was made in all areas of the program.

Microelectromechanical systems contact stress sensor

DOEpatents

Kotovsky, Jack

2007-12-25

A microelectromechanical systems stress sensor comprising a microelectromechanical systems silicon body. A recess is formed in the silicon body. A silicon element extends into the recess. The silicon element has limited freedom of movement within the recess. An electrical circuit in the silicon element includes a piezoresistor material that allows for sensing changes in resistance that is proportional to bending of the silicon element.

Silicon carbide semiconductor technology for high temperature and radiation environments

NASA Technical Reports Server (NTRS)

Matus, Lawrence G.

1993-01-01

Viewgraphs on silicon carbide semiconductor technology and its potential for enabling electronic devices to function in high temperature and high radiation environments are presented. Topics covered include silicon carbide; sublimation growth of 6H-SiC boules; SiC chemical vapor deposition reaction system; 6H silicon carbide p-n junction diode; silicon carbide MOSFET; and silicon carbide JFET radiation response.

Area Reports. Advanced materials and devices research area. Silicon materials research task, and advanced silicon sheet task

NASA Technical Reports Server (NTRS)

1986-01-01

The objectives of the Silicon Materials Task and the Advanced Silicon Sheet Task are to identify the critical technical barriers to low-cost silicon purification and sheet growth that must be overcome to produce a PV cell substrate material at a price consistent with Flat-plate Solar Array (FSA) Project objectives and to overcome these barriers by performing and supporting appropriate R&D. Progress reports are given on silicon refinement using silane, a chemical vapor transport process for purifying metallurgical grade silicon, silicon particle growth research, and modeling of silane pyrolysis in fluidized-bed reactors.

Process for producing amorphous and crystalline silicon nitride

DOEpatents

Morgan, P.E.D.; Pugar, E.A.

1985-11-12

A process for producing amorphous or crystalline silicon nitride is disclosed which comprises reacting silicon disulfide ammonia gas at elevated temperature. In a preferred embodiment silicon disulfide in the form of whiskers'' or needles is heated at temperature ranging from about 900 C to about 1,200 C to produce silicon nitride which retains the whisker or needle morphological characteristics of the silicon disulfide. Silicon carbide, e.g. in the form of whiskers, also can be prepared by reacting substituted ammonia, e.g. methylamine, or a hydrocarbon containing active hydrogen-containing groups, such as ethylene, with silicon disulfide, at elevated temperature, e.g. 900 C. 6 figs.

Effect of superhydrophobicity on surface damage of silicone rubber under AC voltage

NASA Astrophysics Data System (ADS)

Li, Yufeng; Jin, Haiyun; Nie, Shichao; Tong, Cheng; Gao, Naikui

2018-03-01

In this paper, the influence of superhydrophobicity on the surface damage of silicone rubber is studied. On a common silicone rubber surface, a droplet can become elongated, and arc discharge induced by the droplet can cause tracking on the silicone rubber surface. However, for a superhydrophobic silicone rubber surface, a droplet can leave the silicone rubber due to the low adhesion of the superhydrophobic surface. Accordingly, arc discharge caused by the droplet does not occur, and the surface of the silicone rubber is not affected. Results demonstrate that using a superhydrophobic surface has a significant effect on limiting the surface damage of silicone rubber.

Process for producing amorphous and crystalline silicon nitride

DOEpatents

Morgan, Peter E. D.; Pugar, Eloise A.

1985-01-01

A process for producing amorphous or crystalline silicon nitride is disclosed which comprises reacting silicon disulfide ammonia gas at elevated temperature. In a preferred embodiment silicon disulfide in the form of "whiskers" or needles is heated at temperature ranging from about 900.degree. C. to about 1200.degree. C. to produce silicon nitride which retains the whisker or needle morphological characteristics of the silicon disulfide. Silicon carbide, e.g. in the form of whiskers, also can be prepared by reacting substituted ammonia, e.g. methylamine, or a hydrocarbon containing active hydrogen-containing groups, such as ethylene, with silicon disulfide, at elevated temperature, e.g. 900.degree. C.

Effects of varying oxygen partial pressure on molten silicon-ceramic substrate interactions

NASA Technical Reports Server (NTRS)

Ownby, D. P.; Barsoum, M. W.

1980-01-01

The silicon sessile drop contact angle was measured on hot pressed silicon nitride, silicon nitride coated on hot pressed silicon nitride, silicon carbon coated on graphite, and on Sialon to determine the degree to which silicon wets these substances. The post-sessile drop experiment samples were sectioned and photomicrographs were taken of the silicon-substrate interface to observe the degree of surface dissolution and degradation. Of these materials, silicon did not form a true sessile drop on the SiC on graphite due to infiltration of the silicon through the SiC coating, nor on the Sialon due to the formation of a more-or-less rigid coating on the liquid silicon. The most wetting was obtained on the coated Si3N4 with a value of 42 deg. The oxygen concentrations in a silicon ribbon furnace and in a sessile drop furnace were measured using the protable thoria-yttria solid solution electrolyte oxygen sensor. Oxygen partial pressures of 10 to the minus 7 power atm and 10 to the minus 8 power atm were obtained at the two facilities. These measurements are believed to represent nonequilibrium conditions.

Porous silicon nanocrystals in a silica aerogel matrix

PubMed Central

2012-01-01

Silicon nanoparticles of three types (oxide-terminated silicon nanospheres, micron-sized hydrogen-terminated porous silicon grains and micron-size oxide-terminated porous silicon grains) were incorporated into silica aerogels at the gel preparation stage. Samples with a wide range of concentrations were prepared, resulting in aerogels that were translucent (but weakly coloured) through to completely opaque for visible light over sample thicknesses of several millimetres. The photoluminescence of these composite materials and of silica aerogel without silicon inclusions was studied in vacuum and in the presence of molecular oxygen in order to determine whether there is any evidence for non-radiative energy transfer from the silicon triplet exciton state to molecular oxygen adsorbed at the silicon surface. No sensitivity to oxygen was observed from the nanoparticles which had partially H-terminated surfaces before incorporation, and so we conclude that the silicon surface has become substantially oxidised. Finally, the FTIR and Raman scattering spectra of the composites were studied in order to establish the presence of crystalline silicon; by taking the ratio of intensities of the silicon and aerogel Raman bands, we were able to obtain a quantitative measure of the silicon nanoparticle concentration independent of the degree of optical attenuation. PMID:22805684

Porous silicon nanocrystals in a silica aerogel matrix.

PubMed

Amonkosolpan, Jamaree; Wolverson, Daniel; Goller, Bernhard; Polisski, Sergej; Kovalev, Dmitry; Rollings, Matthew; Grogan, Michael D W; Birks, Timothy A

2012-07-17

Silicon nanoparticles of three types (oxide-terminated silicon nanospheres, micron-sized hydrogen-terminated porous silicon grains and micron-size oxide-terminated porous silicon grains) were incorporated into silica aerogels at the gel preparation stage. Samples with a wide range of concentrations were prepared, resulting in aerogels that were translucent (but weakly coloured) through to completely opaque for visible light over sample thicknesses of several millimetres. The photoluminescence of these composite materials and of silica aerogel without silicon inclusions was studied in vacuum and in the presence of molecular oxygen in order to determine whether there is any evidence for non-radiative energy transfer from the silicon triplet exciton state to molecular oxygen adsorbed at the silicon surface. No sensitivity to oxygen was observed from the nanoparticles which had partially H-terminated surfaces before incorporation, and so we conclude that the silicon surface has become substantially oxidised. Finally, the FTIR and Raman scattering spectra of the composites were studied in order to establish the presence of crystalline silicon; by taking the ratio of intensities of the silicon and aerogel Raman bands, we were able to obtain a quantitative measure of the silicon nanoparticle concentration independent of the degree of optical attenuation.

Variation in emulsion stabilization behavior of hybrid silicone polymers with change in molecular structure: Phase diagram study.

PubMed

Mehta, Somil C; Somasundaran, P; Kulkarni, Ravi

2009-05-15

Silicone oils are widely used in cosmetics and personal care applications to improve softness and condition skin and hair. Being insoluble in water and most hydrocarbons, a common mode of delivering them is in the form of emulsions. Currently most applications use polyoxyethylene (non-ionic) modified siloxanes as emulsifiers to stabilize silicone oil emulsions. However, ionically grafted silicone polymers have not received much attention. Ionic silicones have significantly different properties than the non-ionic counterpart. Thus considerable potential exists to formulate emulsions of silicones with different water/silicone oil ratios for novel applications. In order to understand the mechanisms underlying the effects of hydrophilic modifications on the ability of hybrid silicone polymers to stabilize various emulsions, this article focuses on the phase diagram studies for silicone emulsions. The emulsifying ability of functional silicones was seen to depend on a number of factors including hydrophilicity of the polymer, nature of the functional groups, the extent of modification, and the method of emulsification. It was observed that the region of stable emulsion in a phase diagram expanded with increase in shear rate. At a given shear rate, the region of stable emulsion and the nature of emulsion (water-in-oil or oil-in-water) was observed to depend on hydrophilic-hydrophobic balance of the hybrid silicone emulsifier. At a fixed amount of modification, the non-ionically modified silicone stabilized an oil-in-water emulsion, whereas the ionic silicones stabilized inverse water-in-oil emulsions. This was attributed to the greater hydrophilicity of the polyoxyethylene modified silicones than the ionic counterparts. In general, it is postulated that with progressive increase in hydrophilicity of hybrid silicone emulsifiers, their tendency to stabilize water-in-oil emulsion decreases with corresponding increase in oil-in-water emulsion. Further, this behavior is hypothesized to depend on the nature of modifying functional groups. Thus a hybrid silicone polymer can be tailored by selecting the nature and degree of hydrophilicity to obtain a desired silicone emulsion.

Bond Sensitivity to Silicone Contamination

NASA Technical Reports Server (NTRS)

Caldwell, G. A.; Hudson, W. D.; Hudson, W. D.; Cash, Stephen F. (Technical Monitor)

2003-01-01

Currently during fabrication of the Space Shuttle booster rocket motors, the use of silicone and silicone-containing products is prohibited in most applications. Many shop aids and other materials containing silicone have the potential, if they make contact with a bond surface, to transfer some of the silicone to the substrates being bonded. Such transfer could result in a reduction of the bond strength or even failure of the subsequent bonds. This concern is driving the need to understand the effect of silicones and the concentration needed to affect a given bond-line strength. Additionally, as silicone detection methods used for materials acceptance improve what may have gone unnoticed earlier is now being detected. Thus, realistic silicone limits for process materials (below which bond performance is satisfactory) are needed rather than having an absolute no silicone permitted policy.

[Experimental study of PVPP/silicone composite automatic expanded material as implants].

PubMed

Yin, Wei-min; Gao, Jian-hua; Yang, Qing-fang; Lu, Feng; Ye, Jia-jia

2009-03-01

To study the feasibility of Polyvinylpolypyrrolidone (PVPP)/silicone composite automatic expanded material as implants. The PVPP hydrogel was mixed with silicone through the location at the high temperature. Implants with different ratio of PVPP to silicone were placed under the back and nose skin in 24 New Zealand rabbits. The surrounding tissue reaction, material and skin expansion were observed and compared with those with pure silicone implants. The study lasted for 200 days. Compared with pure silicone implants, the composite material could expand automatically and stop expanding at about 2 weeks after implantation. Histological study showed similar inflectional and foreign body reaction around the composite material and the pure silicone. Compared with pure silicone, the PVPP/silicone composite implant has the advantage of automatic expansion, so as to expand the soft tissue.

Instrumental studies on silicone oil adsorption to the surface of intraocular lenses

NASA Astrophysics Data System (ADS)

Kim, Chun Ho; Joo, Choun-Ki; Chun, Heung Jae; Yoo, Bok Ryul; Noh, Dong Il; Shim, Young Bock

2012-12-01

The purpose of this study was to examine the degree of adherence of silicone oil to various intraocular lenses (IOLs) through comparison of the physico-chemical properties of the oil and IOLs. Four kinds of IOLs comprising various biomaterials were examined: PMMA (720A™), PHEMA (IOGEL 1103™), Acrysof (MA60BM™), and silicone (SI30NB™). Each lens was immersed in silicone oil or carboxylated silicone (CS-PDMS) oil for 72 h. For determination of the changes in chemical and elemental compositions on the surfaces of IOLs caused by the contact with silicone oil, IOLs were washed and rinsed with n-pentane to remove as much of the adsorbed silicone oil as possible, then subjected to Fourier transform infrared spectroscopic (FTIR) and X-ray photoelectron spectroscopic (XPS) analyses. The results of FTIR studies strongly indicate that washing with n-pentane completely removed the adhered silicone oil on the surfaces of PHEMA and Acrysof IOLs, whereas the residual silicone oil was detected on the surfaces of PMMA and silicone IOLs. XPS studies showed that silicone oil coverage of PMMA lenses was 12%, even after washing with n-pentane. In the case of silicone IOLs, the relative O1s peak area of carboxyl group in the residual CS-PDMS oil was found to be ˜2.7%. Considering that 2.8% carboxyl group-substituted silicone oil was used in the present study, CS-PDMS oil covered the entire surface of the silicone IOLs.

A novel preparation method for silicone oil nanoemulsions and its application for coating hair with silicone

PubMed Central

Hu, Zhenhua; Liao, Meiling; Chen, Yinghui; Cai, Yunpeng; Meng, Lele; Liu, Yajun; Lv, Nan; Liu, Zhenguo; Yuan, Weien

2012-01-01

Background Silicone oil, as a major component in conditioner, is beneficial in the moisture preservation and lubrication of hair. However, it is difficult for silicone oil to directly absorb on the hair surface because of its hydrophobicity. Stable nanoemulsions containing silicone oil may present as a potential solution to this problem. Methods Silicone oil nanoemulsions were prepared using the oil-in-water method with nonionic surfactants. Emulsion particle size and distribution were characterized by scanning electron microscopy. The kinetic stability of this nanoemulsion system was investigated under accelerated stability tests and long-term storage. The effect of silicone oil deposition on hair was examined by analyzing the element of hair after treatment of silicone oil nanoemulsions. Results Nonionic surfactants such as Span 80 and Tween 80 are suitable emulsifiers to prepare oil-in-water nanoemulsions that are both thermodynamically stable and can enhance the absorption of silicone oil on hair surface. Conclusion The silicone oil-in-water nanoemulsions containing nonionic surfactants present as a promising solution to improve the silicone oil deposition on the hair surface for hair care applications. PMID:23166436

Photoluminescence Enhancement of Silole-Capped Silicon Quantum Dots Based on Förster Resonance Energy Transfer.

PubMed

Kim, Seongwoong; Kim, Sungsoo; Ko, Young Chun; Sohn, Honglae

2015-07-01

Photoluminescent porous silicon were prepared by an electrochemical etch of n-type silicon under the illumination with a 300 W tungsten filament bulb for the duration of etch. The red photoluminescence emitting at 650 nm with an excitation wavelength of 450 nm is due to the quantum confinement of silicon quantum dots in porous silicon. HO-terminated red luminescent PS was obtained by an electrochemical treatment of fresh PS with the current of 150 mA for 60 seconds in water and sodium chloride. As-prepared PS was sonicated, fractured, and centrifuged in toluene solution to obtain photoluminescence silicon quantum dots. Dichlorotetraphenylsilole exhibiting an emission band at 520 nm was reacted with HO-terminated silicon quantum dots to give a silole-capped silicon quantum dots. The optical characterization of silole-derivatized silicon quantum dots was investigated by UV-vis and fluorescence spectrometer. The fluorescence emission efficiency of silole-capped silicon quantum dots was increased by about 2.5 times due to F6rster resonance energy transfer from silole moiety to silicon quantum dots.

High surface area silicon materials: fundamentals and new technology.

PubMed

Buriak, Jillian M

2006-01-15

Crystalline silicon forms the basis of just about all computing technologies on the planet, in the form of microelectronics. An enormous amount of research infrastructure and knowledge has been developed over the past half-century to construct complex functional microelectronic structures in silicon. As a result, it is highly probable that silicon will remain central to computing and related technologies as a platform for integration of, for instance, molecular electronics, sensing elements and micro- and nanoelectromechanical systems. Porous nanocrystalline silicon is a fascinating variant of the same single crystal silicon wafers used to make computer chips. Its synthesis, a straightforward electrochemical, chemical or photochemical etch, is compatible with existing silicon-based fabrication techniques. Porous silicon literally adds an entirely new dimension to the realm of silicon-based technologies as it has a complex, three-dimensional architecture made up of silicon nanoparticles, nanowires, and channel structures. The intrinsic material is photoluminescent at room temperature in the visible region due to quantum confinement effects, and thus provides an optical element to electronic applications. Our group has been developing new organic surface reactions on porous and nanocrystalline silicon to tailor it for a myriad of applications, including molecular electronics and sensing. Integration of organic and biological molecules with porous silicon is critical to harness the properties of this material. The construction and use of complex, hierarchical molecular synthetic strategies on porous silicon will be described.

Thiolated silicone oils as adhesive skin protectants for improved barrier function.

PubMed

Partenhauser, A; Zupančič, O; Rohrer, J; Bonengel, S; Bernkop-Schnürch, A

2016-06-01

The purpose of this study was the evaluation of thiolated silicone oil as novel skin protectant exhibiting prolonged residence time, enhanced barrier function and reinforced occlusivity. Two silicone conjugates were synthesized with mercaptopropionic acid (MPA) and thioglycolic acid (TGA) as thiol ligands. Adhesion, protection against artificial urine and water vapour permeability with both a Payne cup set-up and transepidermal water loss (TEWL) measurements on porcine skin were assessed. Silicone thiomers showed pronounced substantivity on skin with 22.1 ± 6.3% and 39.2 ± 6.7% remaining silicone after 8 h for silicone-TGA and silicone-MPA, respectively, whereas unmodified silicone oil and dimethicone were no longer detectable. In particular, silicone-MPA provided a protective shield against artificial urine penetration with less than 25% leakage within 6 h. An up to 2.5-fold improved water vapour impermeability for silicone-MPA in comparison with unmodified control was discovered with the Payne cup model. In addition, for silicone-MPA a reduced TEWL by two-thirds corresponding to non-thiolated control was determined for up to 8 h. Thiolation of silicone oil leads to enhanced skin adhesiveness and barrier function, which is a major advantage compared to commonly used silicones and might thus be a promising treatment modality for various topical applications. © 2015 Society of Cosmetic Scientists and the Société Française de Cosmétologie.

Aquaporins Mediate Silicon Transport in Humans

PubMed Central

Garneau, Alexandre P.; Carpentier, Gabriel A.; Marcoux, Andrée-Anne; Frenette-Cotton, Rachelle; Simard, Charles F.; Rémus-Borel, Wilfried; Caron, Luc; Jacob-Wagner, Mariève; Noël, Micheline; Powell, Jonathan J.; Bélanger, Richard; Côté, François; Isenring, Paul

2015-01-01

In animals, silicon is an abundant and differentially distributed trace element that is believed to play important biological functions. One would thus expect silicon concentrations in body fluids to be regulated by silicon transporters at the surface of many cell types. Curiously, however, and even though they exist in plants and algae, no such transporters have been identified to date in vertebrates. Here, we show for the first time that the human aquaglyceroporins, i.e., AQP3, AQP7, AQP9 and AQP10 can act as silicon transporters in both Xenopus laevis oocytes and HEK-293 cells. In particular, heterologously expressed AQP7, AQP9 and AQP10 are all able to induce robust, saturable, phloretin-sensitive silicon transport activity in the range that was observed for low silicon rice 1 (lsi1), a silicon transporter in plant. Furthermore, we show that the aquaglyceroporins appear as relevant silicon permeation pathways in both mice and humans based on 1) the kinetics of substrate transport, 2) their presence in tissues where silicon is presumed to play key roles and 3) their transcriptional responses to changes in dietary silicon. Taken together, our data provide new evidence that silicon is a potentially important biological element in animals and that its body distribution is regulated. They should open up original areas of investigations aimed at deciphering the true physiological role of silicon in vertebrates. PMID:26313002

Aquaporins Mediate Silicon Transport in Humans.

PubMed

Garneau, Alexandre P; Carpentier, Gabriel A; Marcoux, Andrée-Anne; Frenette-Cotton, Rachelle; Simard, Charles F; Rémus-Borel, Wilfried; Caron, Luc; Jacob-Wagner, Mariève; Noël, Micheline; Powell, Jonathan J; Bélanger, Richard; Côté, François; Isenring, Paul

2015-01-01

In animals, silicon is an abundant and differentially distributed trace element that is believed to play important biological functions. One would thus expect silicon concentrations in body fluids to be regulated by silicon transporters at the surface of many cell types. Curiously, however, and even though they exist in plants and algae, no such transporters have been identified to date in vertebrates. Here, we show for the first time that the human aquaglyceroporins, i.e., AQP3, AQP7, AQP9 and AQP10 can act as silicon transporters in both Xenopus laevis oocytes and HEK-293 cells. In particular, heterologously expressed AQP7, AQP9 and AQP10 are all able to induce robust, saturable, phloretin-sensitive silicon transport activity in the range that was observed for low silicon rice 1 (lsi1), a silicon transporter in plant. Furthermore, we show that the aquaglyceroporins appear as relevant silicon permeation pathways in both mice and humans based on 1) the kinetics of substrate transport, 2) their presence in tissues where silicon is presumed to play key roles and 3) their transcriptional responses to changes in dietary silicon. Taken together, our data provide new evidence that silicon is a potentially important biological element in animals and that its body distribution is regulated. They should open up original areas of investigations aimed at deciphering the true physiological role of silicon in vertebrates.

Amorphous silicon carbide passivating layers for crystalline-silicon-based heterojunction solar cells

DOE Office of Scientific and Technical Information (OSTI.GOV)

Boccard, Mathieu; Holman, Zachary C.

Amorphous silicon enables the fabrication of very high-efficiency crystalline-silicon-based solar cells due to its combination of excellent passivation of the crystalline silicon surface and permeability to electrical charges. Yet, amongst other limitations, the passivation it provides degrades upon high-temperature processes, limiting possible post-deposition fabrication possibilities (e.g., forcing the use of low-temperature silver pastes). We investigate the potential use of intrinsic amorphous silicon carbide passivating layers to sidestep this issue. The passivation obtained using device-relevant stacks of intrinsic amorphous silicon carbide with various carbon contents and doped amorphous silicon are evaluated, and their stability upon annealing assessed, amorphous silicon carbide beingmore » shown to surpass amorphous silicon for temperatures above 300 °C. We demonstrate open-circuit voltage values over 700 mV for complete cells, and an improved temperature stability for the open-circuit voltage. Transport of electrons and holes across the hetero-interface is studied with complete cells having amorphous silicon carbide either on the hole-extracting side or on the electron-extracting side, and a better transport of holes than of electrons is shown. Also, due to slightly improved transparency, complete solar cells using an amorphous silicon carbide passivation layer on the hole-collecting side are demonstrated to show slightly better performances even prior to annealing than obtained with a standard amorphous silicon layer.« less

Amorphous silicon carbide passivating layers for crystalline-silicon-based heterojunction solar cells

DOE Office of Scientific and Technical Information (OSTI.GOV)

Boccard, Mathieu; Holman, Zachary C.

With this study, amorphous silicon enables the fabrication of very high-efficiency crystalline-silicon-based solar cells due to its combination of excellent passivation of the crystalline silicon surface and permeability to electrical charges. Yet, amongst other limitations, the passivation it provides degrades upon high-temperature processes, limiting possible post-deposition fabrication possibilities (e.g., forcing the use of low-temperature silver pastes). We investigate the potential use of intrinsic amorphous silicon carbide passivating layers to sidestep this issue. The passivation obtained using device-relevant stacks of intrinsic amorphous silicon carbide with various carbon contents and doped amorphous silicon are evaluated, and their stability upon annealing assessed, amorphousmore » silicon carbide being shown to surpass amorphous silicon for temperatures above 300°C. We demonstrate open-circuit voltage values over 700 mV for complete cells, and an improved temperature stability for the open-circuit voltage. Transport of electrons and holes across the hetero-interface is studied with complete cells having amorphous silicon carbide either on the hole-extracting side or on the electron-extracting side, and a better transport of holes than of electrons is shown. Also, due to slightly improved transparency, complete solar cells using an amorphous silicon carbide passivation layer on the hole-collecting side are demonstrated to show slightly better performances even prior to annealing than obtained with a standard amorphous silicon layer.« less

Amorphous silicon carbide passivating layers for crystalline-silicon-based heterojunction solar cells

DOE PAGES

Boccard, Mathieu; Holman, Zachary C.

2015-08-14

With this study, amorphous silicon enables the fabrication of very high-efficiency crystalline-silicon-based solar cells due to its combination of excellent passivation of the crystalline silicon surface and permeability to electrical charges. Yet, amongst other limitations, the passivation it provides degrades upon high-temperature processes, limiting possible post-deposition fabrication possibilities (e.g., forcing the use of low-temperature silver pastes). We investigate the potential use of intrinsic amorphous silicon carbide passivating layers to sidestep this issue. The passivation obtained using device-relevant stacks of intrinsic amorphous silicon carbide with various carbon contents and doped amorphous silicon are evaluated, and their stability upon annealing assessed, amorphousmore » silicon carbide being shown to surpass amorphous silicon for temperatures above 300°C. We demonstrate open-circuit voltage values over 700 mV for complete cells, and an improved temperature stability for the open-circuit voltage. Transport of electrons and holes across the hetero-interface is studied with complete cells having amorphous silicon carbide either on the hole-extracting side or on the electron-extracting side, and a better transport of holes than of electrons is shown. Also, due to slightly improved transparency, complete solar cells using an amorphous silicon carbide passivation layer on the hole-collecting side are demonstrated to show slightly better performances even prior to annealing than obtained with a standard amorphous silicon layer.« less

PECVD silicon-rich nitride and low stress nitride films mechanical characterization using membrane point load deflection

NASA Astrophysics Data System (ADS)

Bagolini, Alvise; Picciotto, Antonino; Crivellari, Michele; Conci, Paolo; Bellutti, Pierluigi

2016-02-01

An analysis of the mechanical properties of plasma enhanced chemical vapor (PECVD) silicon nitrides is presented, using micro fabricated silicon nitride membranes under point load deflection. The membranes are made of PECVD silicon-rich nitride and low stress nitride films. The mechanical performance of the bended membranes is examined both with analytical models and finite element simulation in order to extract the elastic modulus and residual stress values. The elastic modulus of low stress silicon nitride is calculated using stress free analytical models, while for silicon-rich silicon nitride and annealed low stress silicon nitride it is estimated with a pre-stressed model of point-load deflection. The effect of annealing both in nitrogen and hydrogen atmosphere is evaluated in terms of residual stress, refractive index and thickness variation. It is demonstrated that a hydrogen rich annealing atmosphere induces very little change in low stress silicon nitride. Nitrogen annealing effects are measured and shown to be much higher in silicon-rich nitride than in low stress silicon nitride. An estimate of PECVD silicon-rich nitride elastic modulus is obtained in the range between 240-320 GPa for deposited samples and 390 GPa for samples annealed in nitrogen atmosphere. PECVD low stress silicon nitride elastic modulus is estimated to be 88 GPa as deposited and 320 GPa after nitrogen annealing.

Method of forming crystalline silicon devices on glass

DOEpatents

McCarthy, Anthony M.

1995-01-01

A method for fabricating single-crystal silicon microelectronic components on a silicon substrate and transferring same to a glass substrate. This is achieved by utilizing conventional silicon processing techniques for fabricating components of electronic circuits and devices on bulk silicon, wherein a bulk silicon surface is prepared with epitaxial layers prior to the conventional processing. The silicon substrate is bonded to a glass substrate and the bulk silicon is removed leaving the components intact on the glass substrate surface. Subsequent standard processing completes the device and circuit manufacturing. This invention is useful in applications requiring a transparent or insulating substrate, particularly for display manufacturing. Other applications include sensors, actuators, optoelectronics, radiation hard electronics, and high temperature electronics.

Narrow band gap amorphous silicon semiconductors

DOEpatents

Madan, A.; Mahan, A.H.

1985-01-10

Disclosed is a narrow band gap amorphous silicon semiconductor comprising an alloy of amorphous silicon and a band gap narrowing element selected from the group consisting of Sn, Ge, and Pb, with an electron donor dopant selected from the group consisting of P, As, Sb, Bi and N. The process for producing the narrow band gap amorphous silicon semiconductor comprises the steps of forming an alloy comprising amorphous silicon and at least one of the aforesaid band gap narrowing elements in amount sufficient to narrow the band gap of the silicon semiconductor alloy below that of amorphous silicon, and also utilizing sufficient amounts of the aforesaid electron donor dopant to maintain the amorphous silicon alloy as an n-type semiconductor.

Epitaxial growth of silicon for layer transfer

DOEpatents

Teplin, Charles; Branz, Howard M

2015-03-24

Methods of preparing a thin crystalline silicon film for transfer and devices utilizing a transferred crystalline silicon film are disclosed. The methods include preparing a silicon growth substrate which has an interface defining substance associated with an exterior surface. The methods further include depositing an epitaxial layer of silicon on the silicon growth substrate at the surface and separating the epitaxial layer from the substrate substantially along the plane or other surface defined by the interface defining substance. The epitaxial layer may be utilized as a thin film of crystalline silicon in any type of semiconductor device which requires a crystalline silicon layer. In use, the epitaxial transfer layer may be associated with a secondary substrate.

Powder containing 2H-type silicon carbide produced by reacting silicon dioxide and carbon powder in nitrogen atmosphere in the presence of aluminum

NASA Technical Reports Server (NTRS)

Kuramoto, N.; Takiguchi, H.

1984-01-01

The production of powder which contains silicon carbide consisting of 40% of 2H-type silicon carbide, beta type silicon carbide and less than 3% of nitrogen is discussed. The reaction temperature to produce the powder containing 40% of 2H-type silicon carbide is set at above 1550 degrees C in an atmosphere of aluminum or aluminum compounds and nitrogen gas or an antioxidation atmosphere containing nitrogen gas. The mixture ratio of silicon dioxide and carbon powder is 0.55 - 1:2.0 and the contents of aluminum or aluminum compounds within silicon dioxide is less than 3% in weight.

Method for rapid, controllable growth and thickness, of epitaxial silicon films

DOEpatents

Wang, Qi [Littleton, CO; Stradins, Paul [Golden, CO; Teplin, Charles [Boulder, CO; Branz, Howard M [Boulder, CO

2009-10-13

A method of producing epitaxial silicon films on a c-Si wafer substrate using hot wire chemical vapor deposition by controlling the rate of silicon deposition in a temperature range that spans the transition from a monohydride to a hydrogen free silicon surface in a vacuum, to obtain phase-pure epitaxial silicon film of increased thickness is disclosed. The method includes placing a c-Si substrate in a HWCVD reactor chamber. The method also includes supplying a gas containing silicon at a sufficient rate into the reaction chamber to interact with the substrate to deposit a layer containing silicon thereon at a predefined growth rate to obtain phase-pure epitaxial silicon film of increased thickness.

Aerospace Sensor Component and Subsystem Investigation and Innovation-2 Component Exploration and Development (ASCSII-2 CED) Delivery Order 0003: Hermetically Sealed Cavities in 3-D GaAs-Silicon and Silicon-Silicon Packages for Microelectromechanical System (MEMS) Devices Using Selective and Large-Scale Bonding

DTIC Science & Technology

2003-03-01

and silicon-to-silicon to produce cavities for 3-D assembly of MEMS devices has been demonstrated using SnAgCu and eutectic SnPb solders. Laser and...of GaAs-to-silicon and silicon-to-silicon to produce cavities for 3-D assembly of MEMS devices has been demonstrated using SnAgCu and euctectic...research_images/ 3.2 Solder Reflow The reflow profile for SnAgCu solder was developed on the Sikama convection/ conduction reflow oven using a continuous

Gamma radiation effects on silicon photonic waveguides.

PubMed

Grillanda, Stefano; Singh, Vivek; Raghunathan, Vivek; Morichetti, Francesco; Melloni, Andrea; Kimerling, Lionel; Agarwal, Anuradha M

2016-07-01

To support the use of integrated photonics in harsh environments, such as outer space, the hardness threshold to high-energy radiation must be established. Here, we investigate the effects of gamma (γ) rays, with energy in the MeV-range, on silicon photonic waveguides. By irradiation of high-quality factor amorphous silicon core resonators, we measure the impact of γ rays on the materials incorporated in our waveguide system, namely amorphous silicon, silicon dioxide, and polymer. While we show the robustness of amorphous silicon and silicon dioxide up to an absorbed dose of 15 Mrad, more than 100× higher than previous reports on crystalline silicon, polymer materials exhibit changes with doses as low as 1 Mrad.

Method of densifying an article formed of reaction bonded silicon nitride

NASA Technical Reports Server (NTRS)

Mangels, John A. (Inventor)

1982-01-01

A method of densifying an article formed of reaction bonded silicon nitride is disclosed. The reaction bonded silicon nitride article is packed in a packing mixture consisting of silicon nitride powder and a densification aid. The reaction bonded silicon nitride article and packing powder are sujected to a positive, low pressure nitrogen gas treatment while being heated to a treatment temperature and for a treatment time to cause any open porosity originally found in the reaction bonded silicon nitride article to be substantially closed. Thereafter, the reaction bonded silicon nitride article and packing powder are subjected to a positive high pressure nitrogen gas treatment while being heated to a treatment temperature and for a treatment time to cause a sintering of the reaction bonded silicon nitride article whereby the strength of the reaction bonded silicon nitride article is increased.

Porous silicon carbide (SIC) semiconductor device

NASA Technical Reports Server (NTRS)

Shor, Joseph S. (Inventor); Kurtz, Anthony D. (Inventor)

1996-01-01

Porous silicon carbide is fabricated according to techniques which result in a significant portion of nanocrystallites within the material in a sub 10 nanometer regime. There is described techniques for passivating porous silicon carbide which result in the fabrication of optoelectronic devices which exhibit brighter blue luminescence and exhibit improved qualities. Based on certain of the techniques described porous silicon carbide is used as a sacrificial layer for the patterning of silicon carbide. Porous silicon carbide is then removed from the bulk substrate by oxidation and other methods. The techniques described employ a two-step process which is used to pattern bulk silicon carbide where selected areas of the wafer are then made porous and then the porous layer is subsequently removed. The process to form porous silicon carbide exhibits dopant selectivity and a two-step etching procedure is implemented for silicon carbide multilayers.

Gluing silicon with silicone

NASA Astrophysics Data System (ADS)

Abt, I.; Fox, H.; Moshous, B.; Richter, R. H.; Riechmann, K.; Rietz, M.; Riedl, J.; Denis, R. St; Wagner, W.

1998-02-01

Problems and solutions concerning the gluing of silicon detectors are discussed. The R & D work for the HERA- B vertex detector system led to gluing studies with epoxy and silicone-based adhesives used on ceramics and carbon fibre. The HERA- B solution using a silicone glue is presented.

Silicon entering through silicon utilizing organisms has biological effects in human beings

NASA Astrophysics Data System (ADS)

Shraddhamayananda, S.

2012-12-01

Except in the lungs, there is no evidence that silicon can do any harm in our body and Silicon is as essential as magnesium and calcium for us. It helps in proper activities of the bone tissues and all of the components in the human skeletal system. It can prevent osteoporosis in bones and also helps in lowering of blood pressure. Silicon can also inhibit fungal disease by physically inhibiting fungal germ tube penetration of the epidermis. Many of our foods which are associated with silicon utilizing organisms like rice, vegetables, wheat etc, contain plenty silicon, however, during processing most silicon get lost. In alternative medicine silicon is used to promote expulsion of foreign bodies from tissue, in formation of suppuration and finally expulsion of pus from abscesses. Silicon is also used to remove fibrotic lesions and scar tissue and in this way it can prevent formation of keloids. Sometimes it is also used to treat chronic otitis media, and chronic fistula,

The effect of silicone-gel on the immune response.

PubMed

Naim, J O; Lanzafame, R J; van Oss, C J

1995-01-01

Silicone materials have been used in medical applications for at least 30 years. Despite this long history of use the question whether silicones can mediate an immunological reaction that may be detrimental to the host remains unanswered. Most studies on the biocompatability of silicones conclude that silicones are chemically stable compounds, which however are often capable of eliciting a benign chronic inflammatory response. Recently, our laboratory has conducted a series of animal experiments aimed at determining the immunological adjuvancy potential of silicone-gel taken from commercial breast implants. Our previous studies have indicated that silicone-gel is a potent humoral (antibody) adjuvant. Our present studies have found that silicone-gel is capable of eliciting auto-antibodies to rat thyroglobulin and bovine collagen II. However this immune response did not produce any histological evidence of thyroiditis or arthritis. Theories to explain why silicone-gel behaves as an adjuvant are discussed along with discussion of the hypothesis on the desirability of replacing silicone-gel with a more hydrophilic material in bioimplants.

Modulation Doping of Silicon using Aluminium-induced Acceptor States in Silicon Dioxide

PubMed Central

König, Dirk; Hiller, Daniel; Gutsch, Sebastian; Zacharias, Margit; Smith, Sean

2017-01-01

All electronic, optoelectronic or photovoltaic applications of silicon depend on controlling majority charge carriers via doping with impurity atoms. Nanoscale silicon is omnipresent in fundamental research (quantum dots, nanowires) but also approached in future technology nodes of the microelectronics industry. In general, silicon nanovolumes, irrespective of their intended purpose, suffer from effects that impede conventional doping due to fundamental physical principles such as out-diffusion, statistics of small numbers, quantum- or dielectric confinement. In analogy to the concept of modulation doping, originally invented for III-V semiconductors, we demonstrate a heterostructure modulation doping method for silicon. Our approach utilizes a specific acceptor state of aluminium atoms in silicon dioxide to generate holes as majority carriers in adjacent silicon. By relocating the dopants from silicon to silicon dioxide, Si nanoscale doping problems are circumvented. In addition, the concept of aluminium-induced acceptor states for passivating hole selective tunnelling contacts as required for high-efficiency photovoltaics is presented and corroborated by first carrier lifetime and tunnelling current measurements. PMID:28425460

Effect of ultraviolet illumination and ambient gases on the photoluminescence and electrical properties of nanoporous silicon layer for organic vapor sensor.

PubMed

Atiwongsangthong, Narin

2012-08-01

The purpose of this research, the nanoporous silicon layer were fabricated and investigated the physical properties such as photoluminescence and the electrical properties in order to develop organic vapor sensor by using nanoporous silicon. The Changes in the photoluminescence intensity of nanoporous silicon samples are studied during ultraviolet illumination in various ambient gases such as nitrogen, oxigen and vacuum. In this paper, the nanoporous silicon layer was used as organic vapor adsorption and sensing element. The advantage of this device are simple process compatible in silicon technology and usable in room temperature. The structure of this device consists of nanoporous silicon layer which is formed by anodization of silicon wafer in hydrofluoric acid solution and aluminum electrode which deposited on the top of nanoporous silicon layer by evaporator. The nanoporous silicon sensors were placed in a gas chamber with various organic vapor such as ethanol, methanol and isopropyl alcohol. From studying on electrical characteristics of this device, it is found that the nanoporous silicon layer can detect the different organic vapor. Therefore, the nanoporous silicon is important material for organic vapor sensor and it can develop to other applications about gas sensors in the future.

Surface texture of single-crystal silicon oxidized under a thin V{sub 2}O{sub 5} layer

DOE Office of Scientific and Technical Information (OSTI.GOV)

Nikitin, S. E., E-mail: nikitin@mail.ioffe.ru; Verbitskiy, V. N.; Nashchekin, A. V.

The process of surface texturing of single-crystal silicon oxidized under a V{sub 2}O{sub 5} layer is studied. Intense silicon oxidation at the Si–V{sub 2}O{sub 5} interface begins at a temperature of 903 K which is 200 K below than upon silicon thermal oxidation in an oxygen atmosphere. A silicon dioxide layer 30–50 nm thick with SiO{sub 2} inclusions in silicon depth up to 400 nm is formed at the V{sub 2}O{sub 5}–Si interface. The diffusion coefficient of atomic oxygen through the silicon-dioxide layer at 903 K is determined (D ≥ 2 × 10{sup –15} cm{sup 2} s{sup –1}). A modelmore » of low-temperature silicon oxidation, based on atomic oxygen diffusion from V{sub 2}O{sub 5} through the SiO{sub 2} layer to silicon, and SiO{sub x} precipitate formation in silicon is proposed. After removing the V{sub 2}O{sub 5} and silicon-dioxide layers, texture is formed on the silicon surface, which intensely scatters light in the wavelength range of 300–550 nm and is important in the texturing of the front and rear surfaces of solar cells.« less

Process for purification of silicon

NASA Technical Reports Server (NTRS)

Rath, H. J.; Sirtl, E.; Pfeiffer, W.

1981-01-01

The purification of metallurgically pure silicon having a silicon content of more than 95% by weight is accomplished by leaching with an acidic solution which substantially does not attack silicon. A mechanical treatment leading to continuous particle size reduction of the granulated silicon to be purified is combined with the chemical purification step.

Extracting Silicon From Sodium-Process Products

NASA Technical Reports Server (NTRS)

Kapur, V.; Sanjurjo, A.; Sancier, K. M.; Nanis, L.

1982-01-01

New acid leaching process purifies silicon produced in reaction between silicon fluoride and sodium. Concentration of sodium fluoride and other impurities and byproducts remaining in silicon are within acceptable ranges for semi-conductor devices. Leaching process makes sodium reduction process more attractive for making large quantities of silicon for solar cells.

Method of preparing silicon carbide particles dispersed in an electrolytic bath for composite electroplating of metals

DOEpatents

Peng, Yu-Min; Wang, Jih-Wen; Liue, Chun-Ying; Yeh, Shinn-Horng

1994-01-01

A method for preparing silicon carbide particles dispersed in an electrolytic bath for composite electroplating of metals includes the steps of washing the silicon carbide particles with an organic solvent; washing the silicon carbide particles with an inorganic acid; grinding the silicon carbide particles; and heating the silicon carbide particles in a nickel-containing solution at a boiling temperature for a predetermined period of time.

Rectangular-cladding silicon slot waveguide with improved nonlinear performance

NASA Astrophysics Data System (ADS)

Huang, Zengzhi; Huang, Qingzhong; Wang, Yi; Xia, Jinsong

2018-04-01

Silicon slot waveguides have great potential in hybrid silicon integration to realize nonlinear optical applications. We propose a rectangular-cladding hybrid silicon slot waveguide. Simulation result shows that, with a rectangular-cladding, the slot waveguide can be formed by narrower silicon strips, so the two-photon absorption (TPA) loss in silicon is decreased. When the cladding material is a nonlinear polymer, the calculated TPA figure of merit (FOMTPA) is 4.4, close to the value of bulk nonlinear polymer of 5.0. This value confirms the good nonlinear performance of rectangular-cladding silicon slot waveguides.

Effects of Impurities and Processing on Silicon Solar Cells, Phase 3

NASA Technical Reports Server (NTRS)

Hopkins, R. H.; Davis, J. R.; Blais, P. D.; Rohatgi, A.; Campbell, R. B.; Rai-Choudhury, P.; Stapleton, R. E.; Mollenkopf, H. C.; Mccormick, J. R.

1979-01-01

Results of the 14th quarterly report are presented for a program designed to assess the effects of impurities, thermochemical processes and any impurity process interactions on the performance of terrestrial silicon solar cells. The Phase 3 effort encompasses: (1) potential interactions between impurities and thermochemical processing of silicon; (2) impurity-cell performance relationships in n-base silicon; (3) effect of contaminants introduced during silicon production, refining or crystal growth on cell performance; (4) effects of nonuniform impurity distributions in large area silicon wafers; and (5) a preliminary study of the permanence of impurity effects in silicon solar cells.

Method of forming crystalline silicon devices on glass

DOEpatents

McCarthy, A.M.

1995-03-21

A method is disclosed for fabricating single-crystal silicon microelectronic components on a silicon substrate and transferring same to a glass substrate. This is achieved by utilizing conventional silicon processing techniques for fabricating components of electronic circuits and devices on bulk silicon, wherein a bulk silicon surface is prepared with epitaxial layers prior to the conventional processing. The silicon substrate is bonded to a glass substrate and the bulk silicon is removed leaving the components intact on the glass substrate surface. Subsequent standard processing completes the device and circuit manufacturing. This invention is useful in applications requiring a transparent or insulating substrate, particularly for display manufacturing. Other applications include sensors, actuators, optoelectronics, radiation hard electronics, and high temperature electronics. 7 figures.

Carbothermic reduction and prereduced charge for producing aluminum-silicon alloys

DOEpatents

Stevenson, David T.; Troup, Robert L.

1985-01-01

Disclosed is a method for the carbothermic reduction of aluminum oxide to form an aluminum alloy including producing silicon carbide by heating a first mix of carbon and silicon oxide in a combustion reactor to an elevated temperature sufficient to produce silicon carbide at an accelerated rate, the heating being provided by an in situ combustion with oxygen gas, and then admixing the silicon carbide with carbon and aluminum oxide to form a second mix and heating the second mix in a second reactor to an elevated metal-forming temperature sufficient to produce aluminum-silicon alloy. The prereduction step includes holding aluminum oxide substantially absent from the combustion reactor. The metal-forming step includes feeding silicon oxide in a preferred ratio with silicon carbide.

Characterization of SiC Fiber (SCS-6) Reinforced-Reaction-Formed Silicon Carbide Matrix Composites

NASA Technical Reports Server (NTRS)

Singh, M.; Dickerson, R. M.

1996-01-01

Silicon carbide fiber (SCS-6) reinforced-reaction-formed silicon carbide matrix composites were fabricated using a reaction-forming process. Silicon-2 at.% niobium alloy was used as an infiltrant instead of pure silicon to reduce the amount of free silicon in the matrix after reaction forming. The matrix primarily consists of silicon carbide with a bimodal grain size distribution. Minority phases dispersed within the matrix are niobium disilicide (NbSi2), carbon, and silicon. Fiber pushout tests on these composites determined a debond stress of approximately 67 MPa and a frictional stress of approximately 60 MPa. A typical four-point flexural strength of the composite is 297 MPa (43.1 KSi). This composite shows tough behavior through fiber pullout.

Develop Silicone Encapsulation Systems for Terrestrial Silicon Solar Arrays

NASA Technical Reports Server (NTRS)

1979-01-01

The results for Task 3 of the Low Cost Solar Array Project are presented. Task 3 is directed toward the development of a cost effective encapsulating system for photovoltaic modules using silicon based materials. The technical approach of the contract effort is divided into four special tasks: (1) technology review; (2) generation of concepts for screening and processing silicon encapsulation systems; (3) assessment of encapsulation concepts; and (4) evaluation of encapsulation concepts. The candidate silicon materials are reviewed. The silicon and modified silicon resins were chosen on the basis of similarity to materials with known weatherability, cost, initial tangential modulus, accelerated dirt pick-up test results and the ratio of the content of organic phenyl substitution of methyl substitution on the backbone of the silicon resin.

Doping of silicon by carbon during laser ablation process

NASA Astrophysics Data System (ADS)

Raciukaitis, G.; Brikas, M.; Kazlauskiene, V.; Miskinis, J.

2007-04-01

Effect of laser ablation on properties of remaining material was investigated in silicon. It was established that laser cutting of wafers in air induced doping of silicon by carbon. The effect was found to be more distinct by the use of higher laser power or UV radiation. Carbon ions created bonds with silicon in the depth of silicon. Formation of the silicon carbide type bonds was confirmed by SIMS, XPS and AES measurements. Modeling of the carbon diffusion was performed to clarify its depth profile in silicon. Photo-chemical reactions of such type changed the structure of material and could be a reason for the reduced quality of machining. A controlled atmosphere was applied to prevent carbonization of silicon during laser cutting.

Pseudo-direct bandgap transitions in silicon nanocrystals: effects on optoelectronics and thermoelectrics.

PubMed

Singh, Vivek; Yu, Yixuan; Sun, Qi-C; Korgel, Brian; Nagpal, Prashant

2014-12-21

While silicon nanostructures are extensively used in electronics, the indirect bandgap of silicon poses challenges for optoelectronic applications like photovoltaics and light emitting diodes (LEDs). Here, we show that size-dependent pseudo-direct bandgap transitions in silicon nanocrystals dominate the interactions between (photoexcited) charge carriers and phonons, and hence the optoelectronic properties of silicon nanocrystals. Direct measurements of the electronic density of states (DOS) for different sized silicon nanocrystals reveal that these pseudo-direct transitions, likely arising from the nanocrystal surface, can couple with the quantum-confined silicon states. Moreover, we demonstrate that since these transitions determine the interactions of charge carriers with phonons, they change the light emission, absorption, charge carrier diffusion and phonon drag (Seebeck coefficient) in nanoscaled silicon semiconductors. Therefore, these results can have important implications for the design of optoelectronics and thermoelectric devices based on nanostructured silicon.

Biodeterioration of medical-grade silicone rubber used for voice prostheses: a SEM study.

PubMed

Neu, T R; Van der Mei, H C; Busscher, H J; Dijk, F; Verkerke, G J

1993-05-01

Silicone voice prostheses used for rehabilitation of speech after total laryngectomy are inserted in an non-sterile habitat. Deposits on explanted Groningen Button voice prostheses revealed a biofilm, due to heavy colonization of the silicone surface by bacteria and yeasts. Furthermore, it was demonstrated by scanning electron microscopy on sectioned explants that the silicone material was deteriorated by filamentous and vegetative yeast cells. The different explants showed a variety of sharp-edged, discrete yeast colonies. The yeasts grew just under the silicone surface and up to 700 microns into the silicone material. Finally, nine different types of defects in the silicone material created by the yeasts are described. This deterioration of the silicone by yeasts seems to be the main reason for the failure and the frequent replacement of the prostheses. The mechanisms of silicone deterioration are still hypothetical.

Porosity and thickness effect of porous silicon layer on photoluminescence spectra

NASA Astrophysics Data System (ADS)

Husairi, F. S.; Eswar, K. A.; Guliling, Muliyadi; Khusaimi, Z.; Rusop, M.; Abdullah, S.

2018-05-01

The porous silicon nanostructures was prepared by electrochemical etching of p-type silicon wafer. Porous silicon prepared by using different current density and fix etching time with assistance of halogen lamp. The physical structure of porous silicon measured by the parameters used which know as experimental factor. In this work, we select one of those factors to correlate which optical properties of porous silicon. We investigated the surface morphology by using Surface Profiler (SP) and photoluminescence using Photoluminescence (PL) spectrometer. Different physical characteristics of porous silicon produced when current density varied. Surface profiler used to measure the thickness of porous and the porosity calculated using mass different of silicon. Photoluminescence characteristics of porous silicon depend on their morphology because the size and distribution of pore its self will effect to their exciton energy level. At J=30 mA/cm2 the shorter wavelength produced and it followed the trend of porosity with current density applied.

Method of fabricating porous silicon carbide (SiC)

NASA Technical Reports Server (NTRS)

Shor, Joseph S. (Inventor); Kurtz, Anthony D. (Inventor)

1995-01-01

Porous silicon carbide is fabricated according to techniques which result in a significant portion of nanocrystallites within the material in a sub 10 nanometer regime. There is described techniques for passivating porous silicon carbide which result in the fabrication of optoelectronic devices which exhibit brighter blue luminescence and exhibit improved qualities. Based on certain of the techniques described porous silicon carbide is used as a sacrificial layer for the patterning of silicon carbide. Porous silicon carbide is then removed from the bulk substrate by oxidation and other methods. The techniques described employ a two-step process which is used to pattern bulk silicon carbide where selected areas of the wafer are then made porous and then the porous layer is subsequently removed. The process to form porous silicon carbide exhibits dopant selectivity and a two-step etching procedure is implemented for silicon carbide multilayers.

Impact of Carbon Codoping on Generation and Dissociation of Boron-Oxygen Defects in Czochralski Silicon

NASA Astrophysics Data System (ADS)

Xie, Meng; Yu, Xuegong; Wu, Yichao; Yang, Deren

2018-06-01

It has been previously reported that boron-oxygen (B-O) defects in Czochralski (CZ) silicon can be effectively suppressed by carbon codoping. In this work, the kinetics of B-O defect generation and dissociation in carbon-codoped CZ (CCZ) silicon has been investigated. It was found that the activation energy for B-O defect generation in CCZ silicon is 0.56 eV, much larger than that in conventional CZ silicon. However, the activation energy for B-O defect dissociation in CCZ silicon is almost the same as that in conventional CZ silicon, viz. ˜ 1.37 eV. Moreover, the binding energy of B-O defects in both CZ and CCZ silicon is determined to be 0.93 eV. Based on these results, it is believed that carbon atoms in CCZ silicon participate in formation of B-O latent centers before transforming into recombination-active centers under illumination.

JAGUAR Procedures for Detonation Behavior of Silicon Containing Explosives

NASA Astrophysics Data System (ADS)

Stiel, Leonard; Baker, Ernest; Capellos, Christos; Poulos, William; Pincay, Jack

2007-06-01

Improved relationships for the thermodynamic properties of solid and liquid silicon and silicon oxide for use with JAGUAR thermo-chemical equation of state routines were developed in this study. Analyses of experimental melting temperature curves for silicon and silicon oxide indicated complex phase behavior and that improved coefficients were required for solid and liquid thermodynamic properties. Advanced optimization routines were utilized in conjunction with the experimental melting point data to establish volumetric coefficients for these substances. The new property libraries resulted in agreement with available experimental values, including Hugoniot data at elevated pressures. Detonation properties were calculated with JAGUAR using the revised property libraries for silicon containing explosives. Constants of the JWLB equation of state were established for varying extent of silicon reaction. Supporting thermal heat transfer analyses were conducted for varying silicon particle sizes to establish characteristic times for melting and silicon reaction.

Thin Film Transistors On Plastic Substrates

DOEpatents

Carey, Paul G.; Smith, Patrick M.; Sigmon, Thomas W.; Aceves, Randy C.

2004-01-20

A process for formation of thin film transistors (TFTs) on plastic substrates replaces standard thin film transistor fabrication techniques, and uses sufficiently lower processing temperatures so that inexpensive plastic substrates may be used in place of standard glass, quartz, and silicon wafer-based substrates. The silicon based thin film transistor produced by the process includes a low temperature substrate incapable of withstanding sustained processing temperatures greater than about 250.degree. C., an insulating layer on the substrate, a layer of silicon on the insulating layer having sections of doped silicon, undoped silicon, and poly-silicon, a gate dielectric layer on the layer of silicon, a layer of gate metal on the dielectric layer, a layer of oxide on sections of the layer of silicon and the layer of gate metal, and metal contacts on sections of the layer of silicon and layer of gate metal defining source, gate, and drain contacts, and interconnects.

Polycrystalline silicon study: Low-cost silicon refining technology prospects and semiconductor-grade polycrystalline silicon availability through 1988

NASA Technical Reports Server (NTRS)

Costogue, E. N.; Ferber, R.; Lutwack, R.; Lorenz, J. H.; Pellin, R.

1984-01-01

Photovoltaic arrays that convert solar energy into electrical energy can become a cost effective bulk energy generation alternative, provided that an adequate supply of low cost materials is available. One of the key requirements for economic photovoltaic cells is reasonably priced silicon. At present, the photovoltaic industry is dependent upon polycrystalline silicon refined by the Siemens process primarily for integrated circuits, power devices, and discrete semiconductor devices. This dependency is expected to continue until the DOE sponsored low cost silicon refining technology developments have matured to the point where they are in commercial use. The photovoltaic industry can then develop its own source of supply. Silicon material availability and market pricing projections through 1988 are updated based on data collected early in 1984. The silicon refining industry plans to meet the increasing demands of the semiconductor device and photovoltaic product industries are overviewed. In addition, the DOE sponsored technology research for producing low cost polycrystalline silicon, probabilistic cost analysis for the two most promising production processes for achieving the DOE cost goals, and the impacts of the DOE photovoltaics program silicon refining research upon the commercial polycrystalline silicon refining industry are addressed.

Complications of cataract surgery in eyes filled with silicone oil.

PubMed

Kanclerz, Piotr; Grzybowski, Andrzej; Schwartz, Stephen G; Lipowski, Paweł

2018-03-01

The aim of the study was to evaluate complications of cataract surgery in eyes filled with silicone oil. This retrospective, noncomparative, consecutive case series analyzed medical files of patients with eyes filled with silicone oil undergoing cataract surgery. Phacoemulsification with posterior chamber intraocular lens implantation was conducted with or without concurrent silicone oil removal. In this study, 121 eyes of 120 patients were included. In 32 eyes (26.4%) with evident silicone oil microemulsification or silicone oil-associated open-angle glaucoma, silicone oil was removed prior to phacoemulsification through a pars plana incision and no cases of posterior capsular rupture occurred during the subsequent cataract surgery. In the remaining 89 eyes, phacoemulsification was performed with silicone oil in the vitreous cavity. In these eyes, the rate of posterior capsular rupture was 9/89 (10.1%) and the rate of silicone oil migration into the anterior chamber through an apparently intact posterior capsule was 5/89 (5.6%). In 94 eyes (77.7%), an intraocular lens was inserted into the capsular bag, in 3 eyes (2.5%) into the sulcus, and in 1 eye (0.8%) a transscleral suturing was performed. In this series, complications related to the silicone oil were not uncommon during cataract surgery. In the majority of patients without evident silicone oil microemulsification or silicone oil-associated open-angle glaucoma, cataract surgery and posterior chamber intraocular lens implantation were performed while leaving the silicone oil in place.

Consequences of Atomic Oxygen Interaction With Silicone and Silicone Contamination on Surfaces in Low Earth Orbit

NASA Technical Reports Server (NTRS)

Banks, Bruce A.; deGroh, Kim K.; Rutledge, Sharon K.; Haytas, Christy A.

1999-01-01

The exposure of silicones to atomic oxygen in low Earth orbit causes oxidation of the surface, resulting in conversion of silicone to silica. This chemical conversion increases the elastic modulus of the surface and initiates the development of a tensile strain. Ultimately, with sufficient exposure, tensile strain leads to cracking of the surface enabling the underlying unexposed silicone to be converted to silica resulting in additional depth and extent of cracking. The use of silicone coatings for the protection of materials from atomic oxygen attack is limited because of the eventual exposure of underlying unprotected polymeric material due to deep tensile stress cracking of the oxidized silicone. The use of moderate to high volatility silicones in low Earth orbit has resulted in a silicone contamination arrival at surfaces which are simultaneously being bombarded with atomic oxygen, thus leading to conversion of the silicone contaminant to silica. As a result of these processes, a gradual accumulation of contamination occurs leading to deposits which at times have been up to several microns thick (as in the case of a Mir solar array after 10 years in space). The contamination species typically consist of silicon, oxygen and carbon. which in the synergistic environment of atomic oxygen and UV radiation leads to increased solar absorptance and reduced solar transmittance. A comparison of the results of atomic oxygen interaction with silicones and silicone contamination will be presented based on the LDEF, EOIM-111, Offeq-3 spacecraft and Mir solar array in-space results. The design of a contamination pin-hole camera space experiment which uses atomic oxygen to produce an image of the sources of silicone contamination will also be presented.

High Efficiency, Low Cost Solar Cells Manufactured Using 'Silicon Ink' on Thin Crystalline Silicon Wafers

DOE Office of Scientific and Technical Information (OSTI.GOV)

Antoniadis, H.

Reported are the development and demonstration of a 17% efficient 25mm x 25mm crystalline Silicon solar cell and a 16% efficient 125mm x 125mm crystalline Silicon solar cell, both produced by Ink-jet printing Silicon Ink on a thin crystalline Silicon wafer. To achieve these objectives, processing approaches were developed to print the Silicon Ink in a predetermined pattern to form a high efficiency selective emitter, remove the solvents in the Silicon Ink and fuse the deposited particle Silicon films. Additionally, standard solar cell manufacturing equipment with slightly modified processes were used to complete the fabrication of the Silicon Ink highmore » efficiency solar cells. Also reported are the development and demonstration of a 18.5% efficient 125mm x 125mm monocrystalline Silicon cell, and a 17% efficient 125mm x 125mm multicrystalline Silicon cell, by utilizing high throughput Ink-jet and screen printing technologies. To achieve these objectives, Innovalight developed new high throughput processing tools to print and fuse both p and n type particle Silicon Inks in a predetermined pat-tern applied either on the front or the back of the cell. Additionally, a customized Ink-jet and screen printing systems, coupled with customized substrate handling solution, customized printing algorithms, and a customized ink drying process, in combination with a purchased turn-key line, were used to complete the high efficiency solar cells. This development work delivered a process capable of high volume producing 18.5% efficient crystalline Silicon solar cells and enabled the Innovalight to commercialize its technology by the summer of 2010.« less

Investigation of porous silicon nanopowders functionalized by antibiotic Kanamycin, fluorophore Indocyanine Green

NASA Astrophysics Data System (ADS)

Bespalova, K.; Somov, P. A.; Spivak, Yu M.

2017-11-01

Porous silicon nanopowders for target drug delivery were obtained by electrochemical anodic etching in a hydrofluoric acid solution using the monocrystalline silicon n-type conductivity. Porous silicon powders were obtained by sonification of porous silicon layers. The powders were functionalized by antibiotic Kanamycin and fluorophore Indocyanine Green by the passive adsorption method. The peculiarities of absorption spectra in 190-600 nm region were revealed for functionalized porous silicon powders dispersions in water.

A review of recent progress in heterogeneous silicon tandem solar cells

NASA Astrophysics Data System (ADS)

Yamaguchi, Masafumi; Lee, Kan-Hua; Araki, Kenji; Kojima, Nobuaki

2018-04-01

Silicon solar cells are the most established solar cell technology and are expected to dominate the market in the near future. As state-of-the-art silicon solar cells are approaching the Shockley-Queisser limit, stacking silicon solar cells with other photovoltaic materials to form multi-junction devices is an obvious pathway to further raise the efficiency. However, many challenges stand in the way of fully realizing the potential of silicon tandem solar cells because heterogeneously integrating silicon with other materials often degrades their qualities. Recently, above or near 30% silicon tandem solar cell has been demonstrated, showing the promise of achieving high-efficiency and low-cost solar cells via silicon tandem. This paper reviews the recent progress of integrating solar cell with other mainstream solar cell materials. The first part of this review focuses on the integration of silicon with III-V semiconductor solar cells, which is a long-researched topic since the emergence of III-V semiconductors. We will describe the main approaches—heteroepitaxy, wafer bonding and mechanical stacking—as well as other novel approaches. The second part introduces the integration of silicon with polycrystalline thin-film solar cells, mainly perovskites on silicon solar cells because of its rapid progress recently. We will also use an analytical model to compare the material qualities of different types of silicon tandem solar cells and project their practical efficiency limits.

Analysis of the causes of recurrence after frontalis suspension using silicone rods for congenital ptosis

PubMed Central

Kim, Chang Yeom; Son, Byeong Jae; Son, Jangyup; Hong, Jongill; Lee, Sang Yeul

2017-01-01

Background Silicone rod is a commonly used synthetic suspension material in frontalis suspension surgery to correct blepharoptosis. The most challenging problem and a decisive drawback of the use of silicone rod is a considerable rate of ptosis recurrence after surgery. We examined patients with recurred ptosis and assessed the physical and micromorphological properties of implanted silicone rods to determine the causative mechanisms of recurred ptosis after frontalis suspension using silicone rod. Methods This is a prospective observational case series of 22 pediatric patients with recurred ptosis after frontalis suspension using silicone rods for congenital ptosis. Implanted silicone rods were observed and removed during the operation for correction of recurred ptosis. The removed silicone rods were physically and micromorphologically evaluated to determine the cause of recurrence. Results Pretarsal fixation positions migrated upward, whereas suprabrow fixation positions migrated downward during ptosis recurrence. The breaking strength of implanted silicone rods was reduced by approximately 50% during 3 years. Cracks, debris, and loss of homogenous structure with disintegration were observed on scanning electron micrographs of implanted silicone rods in patients with recurred ptosis. Preoperative severe degree of ptosis also contributed to recurred ptosis. Conclusions Recurrence of ptosis after frontalis suspension using silicone rod was associated with physical changes of implanted silicone rods, including positional migration, weakened tensile strength, and micromorphological changes in combination with patients’ characteristics. PMID:28207846

76 FR 7811 - Silicon Metal From the People's Republic of China: Amended Final Results of Antidumping Duty...

Federal Register 2010, 2011, 2012, 2013, 2014

2011-02-11

... DEPARTMENT OF COMMERCE International Trade Administration [A-570-806] Silicon Metal From the... administrative review of silicon metal from the People's Republic of China (``PRC''). See Silicon Metal From the... the 2008-2009 Administrative Review of the Antidumping Duty Order for Silicon Metal from the People's...

Structural alloy with a protective coating containing silicon or silicon-oxide

DOEpatents

Natesan, K.

1994-12-27

An iron-based alloy is described containing chromium and optionally, nickel. The alloy has a surface barrier of silicon or silicon plus oxygen which converts at high temperature to a protective silicon compound. The alloy can be used in oxygen-sulfur mixed gases at temperatures up to about 1100 C. 8 figures.

Structural alloy with a protective coating containing silicon or silicon-oxide

DOEpatents

Natesan, Ken

1994-01-01

An iron-based alloy containing chromium and optionally, nickel. The alloy has a surface barrier of silicon or silicon plus oxygen which converts at high temperature to a protective silicon compound. The alloy can be used in oxygen-sulfur mixed gases at temperatures up to about 1100.degree. C.

The Failure of Absorption of DC Silicone Fluid 703 from the Gastrointestinal Tract of Rats

PubMed Central

Paul, J.; Pover, W. F. R.

1960-01-01

The intestinal absorption of silicone fluid 703, a methyl phenyl polysiloxane, has been studied in the rat. This silicone was chosen for the present investigation because of its lipid-like character and its solubility in olive oil. The experimental findings demonstrate that very little, if any, silicone is absorbed when fed in olive oil. No silicone was found in the lymph lipids of cannulated rats fed the silicone, and balance experiments by recovery of the organosilicon compound and triglyceride after feeding to rats for three hours showed that 85% of silicone fluid 703 was recovered from the gastrointestinal tract, whereas 70% of the fed triglyceride was absorbed. The unabsorbed silicone was concentrated chiefly in the intestinal lumen. Balance experiments by recovery of the organosilicon compound after long-term feeding gave recoveries of 96% of the silicone. This amount was recovered entirely from the lower part of the gastrointestinal tract and the faeces. No silicon fluid 703 was found in the liver, kidneys, or fat depots. The urine contained no soluble silica. PMID:14430986

Silicon coupled with plasmon nanocavities generates bright visible hot luminescence

NASA Astrophysics Data System (ADS)

Cho, Chang-Hee; Aspetti, Carlos O.; Park, Joohee; Agarwal, Ritesh

2013-04-01

To address the limitations in device speed and performance in silicon-based electronics, there have been extensive studies on silicon optoelectronics with a view to achieving ultrafast optical data processing. The biggest challenge has been to develop an efficient silicon-based light source, because the indirect bandgap of silicon gives rise to extremely low emission efficiencies. Although light emission in quantum-confined silicon at sub-10 nm length scales has been demonstrated, there are difficulties in integrating quantum structures with conventional electronics. It is desirable to develop new concepts to obtain emission from silicon at length scales compatible with current electronic devices (20-100 nm), which therefore do not utilize quantum-confinement effects. Here, we demonstrate an entirely new method to achieve bright visible light emission in `bulk-sized' silicon coupled with plasmon nanocavities at room temperature, from non-thermalized carrier recombination. The highly enhanced emission (internal quantum efficiency of >1%) in plasmonic silicon, together with its size compatibility with current silicon electronics, provides new avenues for developing monolithically integrated light sources on conventional microchips.

Aerosol-Assisted Extraction of Silicon Nanoparticles from Wafer Slicing Waste for Lithium Ion Batteries

NASA Astrophysics Data System (ADS)

Jang, Hee Dong; Kim, Hyekyoung; Chang, Hankwon; Kim, Jiwoong; Roh, Kee Min; Choi, Ji-Hyuk; Cho, Bong-Gyoo; Park, Eunjun; Kim, Hansu; Luo, Jiayan; Huang, Jiaxing

2015-03-01

A large amount of silicon debris particles are generated during the slicing of silicon ingots into thin wafers for the fabrication of integrated-circuit chips and solar cells. This results in a significant loss of valuable materials at about 40% of the mass of ingots. In addition, a hazardous silicon sludge waste is produced containing largely debris of silicon, and silicon carbide, which is a common cutting material on the slicing saw. Efforts in material recovery from the sludge and recycling have been largely directed towards converting silicon or silicon carbide into other chemicals. Here, we report an aerosol-assisted method to extract silicon nanoparticles from such sludge wastes and their use in lithium ion battery applications. Using an ultrasonic spray-drying method, silicon nanoparticles can be directly recovered from the mixture with high efficiency and high purity for making lithium ion battery anode. The work here demonstrated a relatively low cost approach to turn wafer slicing wastes into much higher value-added materials for energy applications, which also helps to increase the sustainability of semiconductor material and device manufacturing.

Aerosol-Assisted Extraction of Silicon Nanoparticles from Wafer Slicing Waste for Lithium Ion Batteries

PubMed Central

Jang, Hee Dong; Kim, Hyekyoung; Chang, Hankwon; Kim, Jiwoong; Roh, Kee Min; Choi, Ji-Hyuk; Cho, Bong-Gyoo; Park, Eunjun; Kim, Hansu; Luo, Jiayan; Huang, Jiaxing

2015-01-01

A large amount of silicon debris particles are generated during the slicing of silicon ingots into thin wafers for the fabrication of integrated-circuit chips and solar cells. This results in a significant loss of valuable materials at about 40% of the mass of ingots. In addition, a hazardous silicon sludge waste is produced containing largely debris of silicon, and silicon carbide, which is a common cutting material on the slicing saw. Efforts in material recovery from the sludge and recycling have been largely directed towards converting silicon or silicon carbide into other chemicals. Here, we report an aerosol-assisted method to extract silicon nanoparticles from such sludge wastes and their use in lithium ion battery applications. Using an ultrasonic spray-drying method, silicon nanoparticles can be directly recovered from the mixture with high efficiency and high purity for making lithium ion battery anode. The work here demonstrated a relatively low cost approach to turn wafer slicing wastes into much higher value-added materials for energy applications, which also helps to increase the sustainability of semiconductor material and device manufacturing. PMID:25819285

Silica-forming articles having engineered surfaces to enhance resistance to creep sliding under high-temperature loading

DOE Office of Scientific and Technical Information (OSTI.GOV)

Lipkin, Don Mark; Johnson, Curtis Alan; Meschter, Peter Joel

An article includes a silicon-containing region; at least one outer layer overlying a surface of the silicon-containing region; and a constituent layer on the surface of the silicon-containing region and between and contacting the silicon-containing region and the at least one outer layer, the constituent layer being formed by constituents of the silicon-containing region and being susceptible to creep within an operating environment of the article, wherein the silicon-containing region defines a plurality of channels and a plurality of ridges that interlock within the plurality of channels are formed in the silicon-containing region to physically interlock the at least onemore » outer layer with the silicon-containing region through the constituent layer.« less

Characterization of SiC (SCS-6) Fiber Reinforced Reaction-Formed Silicon Carbide Matrix Composites

NASA Technical Reports Server (NTRS)

Singh, Mrityunjay; Dickerson, Robert M.

1995-01-01

Silicon carbide (SCS-6) fiber reinforced-reaction formed silicon carbide matrix composites were fabricated using NASA's reaction forming process. Silicon-2 at a percent of niobium alloy was used as an infiltrant instead of pure silicon to reduce the amount of free silicon in the matrix after reaction forming. The matrix primarily consists of silicon carbide with a bi-modal grain size distribution. Minority phases dispersed within the matrix are niobium disilicide (NbSi2), carbon and silicon. Fiber push-out tests on these composites determined a debond stress of approx. 67 MPa and a frictional stress of approx. 60 MPa. A typical four point flexural strength of the composite is 297 MPa (43.1 KSi). This composite shows tough behavior through fiber pull out.

Silicon oxidation in fluoride solutions

NASA Technical Reports Server (NTRS)

Sancier, K. M.; Kapur, V.

1980-01-01

Silicon is produced in a NaF, Na2SiF6, and Na matrix when SiF4 is reduced by metallic sodium. Hydrogen is evolved during acid leaching to separate the silicon from the accompanying reaction products, NaF and Na2SiF6. The hydrogen evolution reaction was studied under conditions simulating leaching conditions by making suspensions of the dry silicon powder in aqueous fluoride solutions. The mechanism for the hydrogen evolution is discussed in terms of spontaneous oxidation of silicon resulting from the cooperative effects of (1) elemental sodium in the silicon that reacts with water to remove a protective silica layer, leaving clean reactive silicon, and (2) fluoride in solution that complexes with the oxidized silicon in solution and retards formation of a protective hydrous oxide gel.

Glass-silicon column

DOEpatents

Yu, Conrad M.

2003-12-30

A glass-silicon column that can operate in temperature variations between room temperature and about 450.degree. C. The glass-silicon column includes large area glass, such as a thin Corning 7740 boron-silicate glass bonded to a silicon wafer, with an electrode embedded in or mounted on glass of the column, and with a self alignment silicon post/glass hole structure. The glass/silicon components are bonded, for example be anodic bonding. In one embodiment, the column includes two outer layers of silicon each bonded to an inner layer of glass, with an electrode imbedded between the layers of glass, and with at least one self alignment hole and post arrangement. The electrode functions as a column heater, and one glass/silicon component is provided with a number of flow channels adjacent the bonded surfaces.

Raman Spectra of High-κ Dielectric Layers Investigated with Micro-Raman Spectroscopy Comparison with Silicon Dioxide

PubMed Central

Borowicz, P.; Taube, A.; Rzodkiewicz, W.; Latek, M.; Gierałtowska, S.

2013-01-01

Three samples with dielectric layers from high-κ dielectrics, hafnium oxide, gadolinium-silicon oxide, and lanthanum-lutetium oxide on silicon substrate were studied by Raman spectroscopy. The results obtained for high-κ dielectrics were compared with spectra recorded for silicon dioxide. Raman spectra suggest the similarity of gadolinium-silicon oxide and lanthanum-lutetium oxide to the bulk nondensified silicon dioxide. The temperature treatment of hafnium oxide shows the evolution of the structure of this material. Raman spectra recorded for as-deposited hafnium oxide are similar to the results obtained for silicon dioxide layer. After thermal treatment especially at higher temperatures (600°C and above), the structure of hafnium oxide becomes similar to the bulk non-densified silicon dioxide. PMID:24072982

Carbothermic reduction and prereduced charge for producing aluminum-silicon alloys

DOEpatents

Stevenson, D.T.; Troup, R.L.

1985-01-01

Disclosed is a method for the carbothermic reduction of aluminum oxide to form an aluminum alloy including producing silicon carbide by heating a first mix of carbon and silicon oxide in a combustion reactor to an elevated temperature sufficient to produce silicon carbide at an accelerated rate, the heating being provided by an in situ combustion with oxygen gas, and then admixing the silicon carbide with carbon and aluminum oxide to form a second mix and heating the second mix in a second reactor to an elevated metal-forming temperature sufficient to produce aluminum-silicon alloy. The prereduction step includes holding aluminum oxide substantially absent from the combustion reactor. The metal-forming step includes feeding silicon oxide in a preferred ratio with silicon carbide. 1 fig.

Etching process for improving the strength of a laser-machined silicon-based ceramic article

DOEpatents

Copley, Stephen M.; Tao, Hongyi; Todd-Copley, Judith A.

1991-01-01

A process for improving the strength of laser-machined articles formed of a silicon-based ceramic material such as silicon nitride, in which the laser-machined surface is immersed in an etching solution of hydrofluoric acid and nitric acid for a duration sufficient to remove substantially all of a silicon film residue on the surface but insufficient to allow the solution to unduly attack the grain boundaries of the underlying silicon nitride substrate. This effectively removes the silicon film as a source of cracks that otherwise could propagate downwardly into the silicon nitride substrate and significantly reduce its strength.

Etching process for improving the strength of a laser-machined silicon-based ceramic article

DOEpatents

Copley, S.M.; Tao, H.; Todd-Copley, J.A.

1991-06-11

A process is disclosed for improving the strength of laser-machined articles formed of a silicon-based ceramic material such as silicon nitride, in which the laser-machined surface is immersed in an etching solution of hydrofluoric acid and nitric acid for a duration sufficient to remove substantially all of a silicon film residue on the surface but insufficient to allow the solution to unduly attack the grain boundaries of the underlying silicon nitride substrate. This effectively removes the silicon film as a source of cracks that otherwise could propagate downwardly into the silicon nitride substrate and significantly reduce its strength. 1 figure.

Characterization of solar-grade silicon produced by the SiF4-Na process

NASA Technical Reports Server (NTRS)

Sanjurjo, A.; Sancier, K. M.; Emerson, R. M.; Leach, S. C.; Minahan, J.

1986-01-01

A process was developed for producing low cost solar grade silicon by the reaction between SiF4 gas and sodium metal. The results of the characterization of the silicon are presented. These results include impurity levels, electronic properties of the silicon after crystal growth, and the performance of solar photovoltaic cells fabricated from wafers of the single crystals. The efficiency of the solar cells fabricated from semiconductor silicon and SiF4-Na silicon was the same.

Methods for producing silicon carbide fibers

DOE Office of Scientific and Technical Information (OSTI.GOV)

Garnier, John E.; Griffith, George W.

Methods of producing silicon carbide fibers. The method comprises reacting a continuous carbon fiber material and a silicon-containing gas in a reaction chamber at a temperature ranging from approximately 1500.degree. C. to approximately 2000.degree. C. A partial pressure of oxygen in the reaction chamber is maintained at less than approximately 1.01.times.10.sup.2 Pascal to produce continuous alpha silicon carbide fibers. Continuous alpha silicon carbide fibers and articles formed from the continuous alpha silicon carbide fibers are also disclosed.

Silicon carbide fibers and articles including same

DOEpatents

Garnier, John E; Griffith, George W

2015-01-27

Methods of producing silicon carbide fibers. The method comprises reacting a continuous carbon fiber material and a silicon-containing gas in a reaction chamber at a temperature ranging from approximately 1500.degree. C. to approximately 2000.degree. C. A partial pressure of oxygen in the reaction chamber is maintained at less than approximately 1.01.times.10.sup.2 Pascal to produce continuous alpha silicon carbide fibers. Continuous alpha silicon carbide fibers and articles formed from the continuous alpha silicon carbide fibers are also disclosed.

Electrochemical Deposition of High Purity Silicon from Molten Salts

NASA Astrophysics Data System (ADS)

Haarberg, Geir Martin

Several approaches were tried in order to develop an electrochemical route for producing high purity silicon from molten salts. SiO2, K2SiF6 and metallurgical silicon were used as the source of silicon. Molten electrolytes based on chloride (CaCl2-NaCl) and fluoride (LiF-KF) at temperatures from 550 - 900 oC were used. Transient electrochemical techniques were used to study the electrochemical behaviour of dissolved silicon species. Electrolysis experiments were carried out to deposit silicon.

Electrochemical Deposition of High Purity Silicon in Molten Salts

NASA Astrophysics Data System (ADS)

Haarberg, Geir Martin

Several approaches were tried in order to develop an electrochemical route for producing high purity silicon from molten salts. SiO2, K2SiF6 and metallurgical silicon were used as the source of silicon. Molten electrolytes based on chloride (CaCl2-NaCl) and fluoride (LiF-KF) at temperatures from 550 - 900 °C were used. Transient electrochemical techniques were used to study the electrochemical behaviour of dissolved silicon species. Electrolysis experiments were carried out to deposit silicon.

Intermediate Bandgap Solar Cells From Nanostructured Silicon

DOE Office of Scientific and Technical Information (OSTI.GOV)

Black, Marcie

2014-10-30

This project aimed to demonstrate increased electronic coupling in silicon nanostructures relative to bulk silicon for the purpose of making high efficiency intermediate bandgap solar cells using silicon. To this end, we formed nanowires with controlled crystallographic orientation, small diameter, <111> sidewall faceting, and passivated surfaces to modify the electronic band structure in silicon by breaking down the symmetry of the crystal lattice. We grew and tested these silicon nanowires with <110>-growth axes, which is an orientation that should produce the coupling enhancement.

Selective formation of porous silicon

NASA Technical Reports Server (NTRS)

Fathauer, Jones (Inventor)

1993-01-01

A pattern of porous silicon is produced in the surface of a silicon substrate by forming a pattern of crystal defects in said surface, preferably by applying an ion milling beam through openings in a photoresist layer to the surface, and then exposing said surface to a stain etchant, such as HF:HNO3:H20. The defected crystal will preferentially etch to form a pattern of porous silicon. When the amorphous content of the porous silicon exceeds 70 percent, the porous silicon pattern emits visible light at room temperature.

Electrochemical Formation of a p-n Junction on Thin Film Silicon Deposited in Molten Salt.

PubMed

Zou, Xingli; Ji, Li; Yang, Xiao; Lim, Taeho; Yu, Edward T; Bard, Allen J

2017-11-15

Herein we report the demonstration of electrochemical deposition of silicon p-n junctions all in molten salt. The results show that a dense robust silicon thin film with embedded junction formation can be produced directly from inexpensive silicates/silicon oxide precursors by a two-step electrodeposition process. The fabricated silicon p-n junction exhibits clear diode rectification behavior and photovoltaic effects, indicating promise for application in low-cost silicon thin film solar cells.

Determination of traces of silicone defoamer in fruit juices by solvent extraction/atomic absorption spectroscopy.

PubMed

Gooch, E G

1993-01-01

Silicone defoamers are used to control foam during the processing of fruit juices. Residual silicones in fruit juices can be separated from the naturally occurring siliceous materials in fruit products and selectively recovered by solvent extraction, after suitable pretreatment. The recovered silicone is measured by atomic absorption spectroscopy. Silicone concentrations as low as about 1 ppm can be measured. The juices are accurately spiked for recovery studies by the addition of silicone dispersed in D-sorbitol.

Delta-Doping at Wafer Level for High Throughput, High Yield Fabrication of Silicon Imaging Arrays

NASA Technical Reports Server (NTRS)

Hoenk, Michael E. (Inventor); Nikzad, Shoulch (Inventor); Jones, Todd J. (Inventor); Greer, Frank (Inventor); Carver, Alexander G. (Inventor)

2014-01-01

Systems and methods for producing high quantum efficiency silicon devices. A silicon MBE has a preparation chamber that provides for cleaning silicon surfaces using an oxygen plasma to remove impurities and a gaseous (dry) NH3 + NF3 room temperature oxide removal process that leaves the silicon surface hydrogen terminated. Silicon wafers up to 8 inches in diameter have devices that can be fabricated using the cleaning procedures and MBE processing, including delta doping.

Silicon Technologies Adjust to RF Applications

NASA Technical Reports Server (NTRS)

Reinecke Taub, Susan; Alterovitz, Samuel A.

1994-01-01

Silicon (Si), although not traditionally the material of choice for RF and microwave applications, has become a serious challenger to other semiconductor technologies for high-frequency applications. Fine-line electron- beam and photolithographic techniques are now capable of fabricating silicon gate sizes as small as 0.1 micron while commonly-available high-resistivity silicon wafers support low-loss microwave transmission lines. These advances, coupled with the recent development of silicon-germanium (SiGe), arm silicon integrated circuits (ICs) with the speed required for increasingly higher-frequency applications.

Low-resistivity photon-transparent window attached to photo-sensitive silicon detector

DOEpatents

Holland, Stephen Edward

2000-02-15

The invention comprises a combination of a low resistivity, or electrically conducting, silicon layer that is transparent to long or short wavelength photons and is attached to the backside of a photon-sensitive layer of silicon, such as a silicon wafer or chip. The window is applied to photon sensitive silicon devices such as photodiodes, charge-coupled devices, active pixel sensors, low-energy x-ray sensors and other radiation detectors. The silicon window is applied to the back side of a photosensitive silicon wafer or chip so that photons can illuminate the device from the backside without interference from the circuit printed on the frontside. A voltage sufficient to fully deplete the high-resistivity photosensitive silicon volume of charge carriers is applied between the low-resistivity back window and the front, patterned, side of the device. This allows photon-induced charge created at the backside to reach the front side of the device and to be processed by any circuitry attached to the front side. Using the inventive combination, the photon sensitive silicon layer does not need to be thinned beyond standard fabrication methods in order to achieve full charge-depletion in the silicon volume. In one embodiment, the inventive backside window is applied to high resistivity silicon to allow backside illumination while maintaining charge isolation in CCD pixels.

In situ TEM study of lithiation behavior of silicon nanoparticles attached to and embedded in a carbon matrix.

PubMed

Gu, Meng; Li, Ying; Li, Xiaolin; Hu, Shenyang; Zhang, Xiangwu; Xu, Wu; Thevuthasan, Suntharampillai; Baer, Donald R; Zhang, Ji-Guang; Liu, Jun; Wang, Chongmin

2012-09-25

Rational design of silicon and carbon nanocomposite with a special topological feature has been demonstrated to be a feasible way for mitigating the capacity fading associated with the large volume change of silicon anode in lithium ion batteries. Although the lithiation behavior of silicon and carbon as individual components has been well understood, lithium ion transport behavior across a network of silicon and carbon is still lacking. In this paper, we probe the lithiation behavior of silicon nanoparticles attached to and embedded in a carbon nanofiber using in situ TEM and continuum mechanical calculation. We found that aggregated silicon nanoparticles show contact flattening upon initial lithiation, which is characteristically analogous to the classic sintering of powder particles by a neck-growth mechanism. As compared with the surface-attached silicon particles, particles embedded in the carbon matrix show delayed lithiation. Depending on the strength of the carbon matrix, lithiation of the embedded silicon nanoparticles can lead to the fracture of the carbon fiber. These observations provide insights on lithium ion transport in the network-structured composite of silicon and carbon and ultimately provide fundamental guidance for mitigating the failure of batteries due to the large volume change of silicon anodes.

Creep analysis of silicone for podiatry applications.

PubMed

Janeiro-Arocas, Julia; Tarrío-Saavedra, Javier; López-Beceiro, Jorge; Naya, Salvador; López-Canosa, Adrián; Heredia-García, Nicolás; Artiaga, Ramón

2016-10-01

This work shows an effective methodology to characterize the creep-recovery behavior of silicones before their application in podiatry. The aim is to characterize, model and compare the creep-recovery properties of different types of silicone used in podiatry orthotics. Creep-recovery phenomena of silicones used in podiatry orthotics is characterized by dynamic mechanical analysis (DMA). Silicones provided by Herbitas are compared by observing their viscoelastic properties by Functional Data Analysis (FDA) and nonlinear regression. The relationship between strain and time is modeled by fixed and mixed effects nonlinear regression to compare easily and intuitively podiatry silicones. Functional ANOVA and Kohlrausch-Willians-Watts (KWW) model with fixed and mixed effects allows us to compare different silicones observing the values of fitting parameters and their physical meaning. The differences between silicones are related to the variations of breadth of creep-recovery time distribution and instantaneous deformation-permanent strain. Nevertheless, the mean creep-relaxation time is the same for all the studied silicones. Silicones used in palliative orthoses have higher instantaneous deformation-permanent strain and narrower creep-recovery distribution. The proposed methodology based on DMA, FDA and nonlinear regression is an useful tool to characterize and choose the proper silicone for each podiatry application according to their viscoelastic properties. Copyright © 2016 Elsevier Ltd. All rights reserved.

Naturally occurring 32Si and low-background silicon dark matter detectors

DOE PAGES

Orrell, John L.; Arnquist, Isaac J.; Bliss, Mary; ...

2018-02-10

Here, the naturally occurring radioisotope 32Si represents a potentially limiting background in future dark matter direct-detection experiments. We investigate sources of 32Si and the vectors by which it comes to reside in silicon crystals used for fabrication of radiation detectors. We infer that the 32Si concentration in commercial single-crystal silicon is likely variable, dependent upon the specific geologic and hydrologic history of the source (or sources) of silicon “ore” and the details of the silicon-refinement process. The silicon production industry is large, highly segmented by refining step, and multifaceted in terms of final product type, from which we conclude thatmore » production of 32Si-mitigated crystals requires both targeted silicon material selection and a dedicated refinement-through-crystal-production process. We review options for source material selection, including quartz from an underground source and silicon isotopically reduced in 32Si. To quantitatively evaluate the 32Si content in silicon metal and precursor materials, we propose analytic methods employing chemical processing and radiometric measurements. Ultimately, it appears feasible to produce silicon detectors with low levels of 32Si, though significant assay method development is required to validate this claim and thereby enable a quality assurance program during an actual controlled silicon-detector production cycle.« less

Temperature Response of Emissivity in Intrinsic Silicon: A Selective Absorber for Solar Energy Harvesting

NASA Astrophysics Data System (ADS)

Heredia, Cristian Alonso

The National Academy of Engineers named affordable solar energy as one of the grand challenges for the twenty-first century. Even in sunniest U.S. locations, without subsidies, home generation is still cost prohibitive. To address the cost of solar energy, we investigated intrinsic silicon as a low emissivity selective absorber. We wanted to determine the emissivity of intrinsic silicon at elevated temperatures. At elevated temperatures, a selective absorber coupled to a heat engine could efficiently generate electrical power. Photothermal efficiency depends on the absorber's emissivity. I analyzed total hemispherical emissivity for graphite and intrinsic silicon using a thermal decay method inside a thermal isolation chamber. The results show low emissivity values for intrinsic silicon. Consequently, for temperatures less than 300 °C, intrinsic silicon has a small emissivity (0.16). This small value is in agreement with doped silicon experiments. However, unlike doped silicon, at elevated temperatures of 600 °C, intrinsic silicon emissivity values remain low (0.33). Our analysis suggests intrinsic silicon could convert more solar power into heat than an ideal blackbody. Specifically, the harvested heat could drive a heat engine for efficient power generation. Thus, a cost-effective electrical generating system can operate with a small land footprint using earth abundant silicon.

Naturally occurring 32Si and low-background silicon dark matter detectors

NASA Astrophysics Data System (ADS)

Orrell, John L.; Arnquist, Isaac J.; Bliss, Mary; Bunker, Raymond; Finch, Zachary S.

2018-05-01

The naturally occurring radioisotope 32Si represents a potentially limiting background in future dark matter direct-detection experiments. We investigate sources of 32Si and the vectors by which it comes to reside in silicon crystals used for fabrication of radiation detectors. We infer that the 32Si concentration in commercial single-crystal silicon is likely variable, dependent upon the specific geologic and hydrologic history of the source (or sources) of silicon "ore" and the details of the silicon-refinement process. The silicon production industry is large, highly segmented by refining step, and multifaceted in terms of final product type, from which we conclude that production of 32Si-mitigated crystals requires both targeted silicon material selection and a dedicated refinement-through-crystal-production process. We review options for source material selection, including quartz from an underground source and silicon isotopically reduced in 32Si. To quantitatively evaluate the 32Si content in silicon metal and precursor materials, we propose analytic methods employing chemical processing and radiometric measurements. Ultimately, it appears feasible to produce silicon detectors with low levels of 32Si, though significant assay method development is required to validate this claim and thereby enable a quality assurance program during an actual controlled silicon-detector production cycle.

Silicone Migration From Baked-on Silicone Layers. Particle Characterization in Placebo and Protein Solutions.

PubMed

Funke, Stefanie; Matilainen, Julia; Nalenz, Heiko; Bechtold-Peters, Karoline; Mahler, Hanns-Christian; Friess, Wolfgang

2016-12-01

A significant number of therapeutic proteins are marketed as pre-filled syringes or other drug/device combination products and have been safely used in these formats for years. Silicone oil, which is used as lubricant, can migrate into the drug product and may interact with therapeutic proteins. In this study, particles in the size range of 0.2-5 μm and ≥1 μm as determined by resonant mass measurement and micro-flow imaging/light obscuration, respectively, resulted from silicone sloughing off the container barrel after agitation. The degree of droplet formation correlated well with the applied baked-on silicone levels of 13 μg and 94 μg per cartridge. Silicone migration was comparable in placebo, 2 mg/mL and 33 mg/mL IgG1 formulations containing 0.04% (w/v) polysorbate 20. Headspace substantially increased the formation of silicone droplets during agitation. The highest particle concentrations reached, however, were still very low compared to numbers described for spray-on siliconized containers. When applying adequate baked-on silicone levels below 100 μg, bake-on siliconization efficiently limits silicone migration into the drug product without compromising device functionality. Copyright © 2016 American Pharmacists Association®. Published by Elsevier Inc. All rights reserved.

Engineering functionalized multi-phased silicon/silicon oxide nano-biomaterials to passivate the aggressive proliferation of cancer

PubMed Central

Premnath, P.; Tan, B.; Venkatakrishnan, K.

2015-01-01

Currently, the use of nano silicon in cancer therapy is limited as drug delivery vehicles and markers in imaging, not as manipulative/controlling agents. This is due to limited properties that native states of nano silicon and silicon oxides offers. We introduce nano-functionalized multi-phased silicon/silicon oxide biomaterials synthesized via ultrashort pulsed laser synthesis, with tunable properties that possess inherent cancer controlling properties that can passivate the progression of cancer. This nanostructured biomaterial is composed of individual functionalized nanoparticles made of a homogenous hybrid of multiple phases of silicon and silicon oxide in increasing concentration outwards from the core. The chemical properties of the proposed nanostructure such as number of phases, composition of phases and crystal orientation of each functionalized nanoparticle in the three dimensional nanostructure is defined based on precisely tuned ultrashort pulsed laser-material interaction mechanisms. The amorphous rich phased biomaterial shows a 30 fold (95%) reduction in number of cancer cells compared to bulk silicon in 48 hours. Further, the size of the cancer cells reduces by 76% from 24 to 48 hours. This method exposes untapped properties of combination of multiple phases of silicon oxides and its applications in cancer therapy. PMID:26190009

Naturally occurring 32Si and low-background silicon dark matter detectors

DOE Office of Scientific and Technical Information (OSTI.GOV)

Orrell, John L.; Arnquist, Isaac J.; Bliss, Mary

Here, the naturally occurring radioisotope 32Si represents a potentially limiting background in future dark matter direct-detection experiments. We investigate sources of 32Si and the vectors by which it comes to reside in silicon crystals used for fabrication of radiation detectors. We infer that the 32Si concentration in commercial single-crystal silicon is likely variable, dependent upon the specific geologic and hydrologic history of the source (or sources) of silicon “ore” and the details of the silicon-refinement process. The silicon production industry is large, highly segmented by refining step, and multifaceted in terms of final product type, from which we conclude thatmore » production of 32Si-mitigated crystals requires both targeted silicon material selection and a dedicated refinement-through-crystal-production process. We review options for source material selection, including quartz from an underground source and silicon isotopically reduced in 32Si. To quantitatively evaluate the 32Si content in silicon metal and precursor materials, we propose analytic methods employing chemical processing and radiometric measurements. Ultimately, it appears feasible to produce silicon detectors with low levels of 32Si, though significant assay method development is required to validate this claim and thereby enable a quality assurance program during an actual controlled silicon-detector production cycle.« less

Silicon Nanowires for Solar Thermal Energy Harvesting: an Experimental Evaluation on the Trade-off Effects of the Spectral Optical Properties.

PubMed

Sekone, Abdoul Karim; Chen, Yu-Bin; Lu, Ming-Chang; Chen, Wen-Kai; Liu, Chia-An; Lee, Ming-Tsang

2016-12-01

Silicon nanowire possesses great potential as the material for renewable energy harvesting and conversion. The significantly reduced spectral reflectivity of silicon nanowire to visible light makes it even more attractive in solar energy applications. However, the benefit of its use for solar thermal energy harvesting remains to be investigated and has so far not been clearly reported. The purpose of this study is to provide practical information and insight into the performance of silicon nanowires in solar thermal energy conversion systems. Spectral hemispherical reflectivity and transmissivity of the black silicon nanowire array on silicon wafer substrate were measured. It was observed that the reflectivity is lower in the visible range but higher in the infrared range compared to the plain silicon wafer. A drying experiment and a theoretical calculation were carried out to directly evaluate the effects of the trade-off between scattering properties at different wavelengths. It is clearly seen that silicon nanowires can improve the solar thermal energy harnessing. The results showed that a 17.8 % increase in the harvest and utilization of solar thermal energy could be achieved using a silicon nanowire array on silicon substrate as compared to that obtained with a plain silicon wafer.

Silicone Oil- and Agitation-Induced Aggregation of a Monoclonal Antibody in Aqueous Solution

PubMed Central

Thirumangalathu, Renuka; Krishnan, Sampathkumar; Ricci, Margaret Speed; Brems, David N.; Randolph, Theodore W.; Carpenter, John F.

2009-01-01

Silicone oil, which is used as a lubricant or coating in devices such as syringes, needles and pharmaceutical containers, has been implicated in aggregation and particulation of proteins and antibodies. Aggregation of therapeutic protein products induced by silicone oil can pose a challenge to their development and commercialization. To systematically characterize the role of silicone oil on protein aggregation, the effects of agitation, temperature, pH and ionic strength on silicone oil-induced loss of monomeric anti-streptavidin IgG 1 antibody were examined. Additionally, the influences of excipients polysorbate20 and sucrose on protein aggregation were investigated. In the absence of agitation, protein absorbed to silicone oil with approximately monolayer coverage, however silicone oil did not stimulate aggregation during isothermal incubation unless samples were also agitated. A synergistic stimulation of aggregation by a combination of agitation and silicone oil was observed. Solution conditions which reduced colloidal stability of the antibody, as assessed by determination of osmotic second virial coefficients, accelerated aggregation during agitation with silicone oil. Polysorbate20 completely inhibited silicone oil-induced monomer loss during agitation. A formulation strategy optimizing colloidal stability of the antibody as well as incorporation of surfactants such as polysorbate20 is proposed to reduce silicone oil-induced aggregation of therapeutic protein products. PMID:19360857

Naturally occurring 32 Si and low-background silicon dark matter detectors

DOE Office of Scientific and Technical Information (OSTI.GOV)

Orrell, John L.; Arnquist, Isaac J.; Bliss, Mary

The naturally occurring radioisotope Si-32 represents a potentially limiting background in future dark matter direct-detection experiments. We investigate sources of Si-32 and the vectors by which it comes to reside in silicon crystals used for fabrication of radiation detectors. We infer that the Si-32 concentration in commercial single-crystal silicon is likely variable, dependent upon the specific geologic and hydrologic history of the source (or sources) of silicon “ore” and the details of the silicon-refinement process. The silicon production industry is large, highly segmented by refining step, and multifaceted in terms of final product type, from which we conclude that productionmore » of Si-32-mitigated crystals requires both targeted silicon material selection and a dedicated refinement-through-crystal-production process. We review options for source material selection, including quartz from an underground source and silicon isotopically reduced in Si-32. To quantitatively evaluate the Si-32 content in silicon metal and precursor materials, we propose analytic methods employing chemical processing and radiometric measurements. Ultimately, it appears feasible to produce silicon-based detectors with low levels of Si-32, though significant assay method development is required to validate this claim and thereby enable a quality assurance program during an actual controlled silicon-detector production cycle.« less

The decrease in silicon concentration of the connective tissues with age in rats is a marker of connective tissue turnover.

PubMed

Jugdaohsingh, Ravin; Watson, Abigail I E; Pedro, Liliana D; Powell, Jonathan J

2015-06-01

Silicon may be important for bone and connective tissue health. Higher concentrations of silicon are suggested to be associated with bone and the connective tissues, compared with the non-connective soft tissues. Moreover, in connective tissues it has been suggested that silicon levels may decrease with age based upon analyses of human aorta. These claims, however, have not been tested under controlled conditions. Here connective and non-connective tissues were collected and analysed for silicon levels from female Sprague-Dawley rats of different ages (namely, 3, 5, 8, 12, 26 and 43 weeks; n=8-10 per age group), all maintained on the same feed source and drinking water, and kept in the same environment from weaning to adulthood. Tissues (696 samples) were digested in nitric acid and analysed by inductively coupled plasma optical emission spectrometry for total silicon content. Fasting serum samples were also collected, diluted and analysed for silicon. Higher concentrations of silicon (up to 50-fold) were found associated with bone and the connective tissues compared with the non-connective tissues. Although total silicon content increased with age in all tissues, the highest connective tissue silicon concentrations (up to 9.98 μg/g wet weight) were found in young weanling rats, decreasing thereafter with age (by 2-6 fold). Fasting serum silicon concentrations reflected the pattern of connective tissue silicon concentrations and, both measures, when compared to collagen data from a prior experiment in Sprague-Dawley rats, mirrored type I collagen turnover with age. Our findings confirm the link between silicon and connective tissues and would imply that young growing rats have proportionally higher requirements for dietary silicon than mature adults, for bone and connective tissue development, although this was not formally investigated here. However, estimation of total body silicon content suggested that actual Si requirements may be substantially lower than previously estimated which could explain why absolute silicon deficiency is difficult to achieve but, when it is achieved in young growing animals, it results in stunted growth and abnormal development of bone and other connective tissues. Copyright © 2015. Published by Elsevier Inc.

The decrease in silicon concentration of the connective tissues with age in rats is a marker of connective tissue turnover☆

PubMed Central

Jugdaohsingh, Ravin; Watson, Abigail I.E.; Pedro, Liliana D.; Powell, Jonathan J.

2015-01-01

Silicon may be important for bone and connective tissue health. Higher concentrations of silicon are suggested to be associated with bone and the connective tissues, compared with the non-connective soft tissues. Moreover, in connective tissues it has been suggested that silicon levels may decrease with age based upon analyses of human aorta. These claims, however, have not been tested under controlled conditions. Here connective and non-connective tissues were collected and analysed for silicon levels from female Sprague–Dawley rats of different ages (namely, 3, 5, 8, 12, 26 and 43 weeks; n = 8–10 per age group), all maintained on the same feed source and drinking water, and kept in the same environment from weaning to adulthood. Tissues (696 samples) were digested in nitric acid and analysed by inductively coupled plasma optical emission spectrometry for total silicon content. Fasting serum samples were also collected, diluted and analysed for silicon. Higher concentrations of silicon (up to 50-fold) were found associated with bone and the connective tissues compared with the non-connective tissues. Although total silicon content increased with age in all tissues, the highest connective tissue silicon concentrations (up to 9.98 μg/g wet weight) were found in young weanling rats, decreasing thereafter with age (by 2–6 fold). Fasting serum silicon concentrations reflected the pattern of connective tissue silicon concentrations and, both measures, when compared to collagen data from a prior experiment in Sprague–Dawley rats, mirrored type I collagen turnover with age. Our findings confirm the link between silicon and connective tissues and would imply that young growing rats have proportionally higher requirements for dietary silicon than mature adults, for bone and connective tissue development, although this was not formally investigated here. However, estimation of total body silicon content suggested that actual Si requirements may be substantially lower than previously estimated which could explain why absolute silicon deficiency is difficult to achieve but, when it is achieved in young growing animals, it results in stunted growth and abnormal development of bone and other connective tissues. PMID:25687224

Synthesis, characterization and functionalization of silicon nanoparticle based hybrid nanomaterials for photovoltaic and biological applications

NASA Astrophysics Data System (ADS)

Xu, Zejing

Silicon nanoparticles are attractive candidates for biological, photovoltaic and energy storage applications due to their size dependent optoelectronic properties. These include tunable light emission, high brightness, and stability against photo-bleaching relative to organic dyes (see Chapter 1). The preparation and characterization of silicon nanoparticle based hybrid nanomaterials and their relevance to photovoltaic and biological applications are described. The surface-passivated silicon nanoparticles were produced in one step from the reactive high-energy ball milling (RHEBM) of silicon wafers with various organic ligands. The surface structure and optical properties of the passivated silicon nanoparticles were systematically characterized. Fast approaches for purifying and at the same time size separating the silicon nanoparticles using a gravity GPC column were developed. The hydrodynamic diameter and size distribution of these size-separated silicon nanoparticles were determined using GPC and Diffusion Ordered NMR Spectroscopy (DOSY) as fast, reliable alternative approaches to TEM. Water soluble silicon nanoparticles were synthesized by grafting PEG polymers onto functionalized silicon nanoparticles with distal alkyne or azide moieties. The surface-functionalized silicon nanoparticles were produced from the reactive high-energy ball milling (RHEBM) of silicon wafers with a mixture of either 5-chloro-1-pentyne in 1-pentyne or 1,7 octadiyne in 1-hexyne to afford air and water stable chloroalkyl or alkynyl terminated nanoparticles, respectively. Nanoparticles with the ω-chloroalkyl substituents were easily converted to ω-azidoalkyl groups through the reaction of the silicon nanoparticles with sodium azide in DMF. The azido terminated nanoparticles were then grafted with monoalkynyl-PEG polymers using a copper catalyzed alkyne-azide cycloaddition (CuAAC) reaction to afford core-shell silicon nanoparticles with a covalently attached PEG shell. Covalently linked silicon nanoparticle clusters were synthesized via the CuAAC "click" reaction of functional silicon nanoparticles with α,ω-functional PEG polymers of various lengths. Dynamic light scattering studies show that the flexible globular nanoparticle arrays undergo a solvent dependent change in volume (ethanol> dichloromethane> toluene) similar in behavior to hydrogel nanocomposites. A novel light-harvesting complex and artificial photosynthetic material based on silicon nanoparticles was designed and synthesized. Silicon nanoparticles were used as nanoscaffolds for organizing the porphyrins to form light-harvesting complexes thereby enhancing the light absorption of the system. The energy transfer from silicon nanoparticles to porphyrin acceptors was investigated by both steady-state and time-resolved fluorescence spectroscopy. The energy transfer efficiency depended on the donor-acceptor ratio and the distance between the nanoparticle and the porphyrin ring. The addition of C60 resulted in the formation of silicon nanoparticle-porphyrin-fullerene nanoclusters which led to charge separation upon irradiation of the porphyrin ring. The electron-transfer process between the porphyrin and fullerene was investigated by femto-second transient absorption spectroscopy. Finally, the water soluble silicon nanoparticles were used as nanocarriers in photodynamic therapeutic application, in which can selectively deliver porphyrins into human embryonic kidney 293T (HEK293T) cells. In particular, the PEGylated alkynyl-porphyrins were conjugated onto the azido-terminated silicon nanoparticles via a CuAAC "click" reaction. The resultant PEGylated porphyrin grafted silicon nanoparticles have diameters around 13.5 +/- 3.8 nm. The cryo-TEM and conventional TEM analysis proved that the PEGylated porphyrin grafted silicon nanoparticle could form the micelle-like structures at higher concentration in water via self-assembly. The UV-Vis absorption analysis demonstrated that the silicon nanoparticle could reduce the porphyrin aggregation in water which can reduce the photophysical activity of porphyrin. In addition, the nanoparticle complex was capable of producing singlet oxygen when the porphyrin units were excited by light. The cell studies demonstrated that the silicon nanoparticle could deliver the porphyrin drugs into HEK293T cells and accumulate in the mitochondria where the porphyrin could serve as an efficient photosensitizer to kill the cells via mitochondrial apoptotic pathway.

Silicon nanocrystal inks, films, and methods

DOEpatents

Wheeler, Lance Michael; Kortshagen, Uwe Richard

2015-09-01

Silicon nanocrystal inks and films, and methods of making and using silicon nanocrystal inks and films, are disclosed herein. In certain embodiments the nanocrystal inks and films include halide-terminated (e.g., chloride-terminated) and/or halide and hydrogen-terminated nanocrystals of silicon or alloys thereof. Silicon nanocrystal inks and films can be used, for example, to prepare semiconductor devices.

Method of inducing differential etch rates in glow discharge produced amorphous silicon

DOEpatents

Staebler, David L.; Zanzucchi, Peter J.

1980-01-01

A method of inducing differential etch rates in glow discharge produced amorphous silicon by heating a portion of the glow discharge produced amorphous silicon to a temperature of about 365.degree. C. higher than the deposition temperature prior to etching. The etch rate of the exposed amorphous silicon is less than the unheated amorphous silicon.

Method for sputtering a PIN microcrystalline/amorphous silicon semiconductor device with the P and N-layers sputtered from boron and phosphorous heavily doped targets

DOEpatents

Moustakas, Theodore D.; Maruska, H. Paul

1985-04-02

A silicon PIN microcrystalline/amorphous silicon semiconductor device is constructed by the sputtering of N, and P layers of silicon from silicon doped targets and the I layer from an undoped target, and at least one semi-transparent ohmic electrode.

Structural alloy with a protective coating containing silicon or silicon-oxide

DOEpatents

Natesan, K.

1992-01-01

This invention is comprised of an iron-based alloy containing chromium and optionally, nickel. The alloy has a surface barrier of silicon or silicon plus oxygen which converts at high temperature to a protective silicon compound. The alloy can be used in oxygen-sulfur mixed gases at temperatures up to about 1100{degrees}C.

Ultrasonic Measurement Of Silicon-Growth Interface

NASA Technical Reports Server (NTRS)

Heyser, Richard C.

1988-01-01

Position of interface between silicon melt and growing ribbon of silicon measured with aid of reflected ultrasound, according to proposal. Reflections reveal characteristics of ribbon and melt. Ultrasound pulses travel through rods to silicon ribbon growing by dendritic-web process. Rods return reflections of pulses to sonic transducers. Isolate transducers thermally, but not acoustically, from hot silicon melt.

Adjustable Lid Aids Silicon-Ribbon Growth

NASA Technical Reports Server (NTRS)

Mchugh, J. P.; Steidensticker, R. G.; Duncan, C. S.

1985-01-01

Closely-spaced crucible cover speeds up solidification. Growth rate of dendritic-web silicon ribbon from molten silicon increased by controlling distance between crucible susceptor lid and liquid/solid interface. Lid held in relatively high position when crucible newly filled with chunks of polycrystalline silicon. As silicon melts and forms pool of liquid at lower level, lid gradually lowered.

Silicone Gel-Filled Breast Implants

MedlinePlus

... and Medical Procedures Implants and Prosthetics Breast Implants Silicone Gel-Filled Breast Implants Share Tweet Linkedin Pin ... sharing options Linkedin Pin it Email Print Description: Silicone gel-filled breast implants have a silicone outer ...

Solar silicon from directional solidification of MG silicon produced via the silicon carbide route

NASA Technical Reports Server (NTRS)

Rustioni, M.; Margadonna, D.; Pirazzi, R.; Pizzini, S.

1986-01-01

A process of metallurgical grade (MG) silicon production is presented which appears particularly suitable for photovoltaic (PV) applications. The MG silicon is prepared in a 240 KVA, three electrode submerged arc furnace, starting from high grade quartz and high purity silicon carbide. The silicon smelted from the arc furnace was shown to be sufficiently pure to be directionally solidified to 10 to 15 kg. After grinding and acid leaching, had a material yield larger than 90%. With a MG silicon feedstock containing 3 ppmw B, 290 ppmw Fe, 190 ppmw Ti, and 170 ppmw Al, blended with 50% of off grade electronic grade (EG) silicon to reconduct the boron content to a concentration acceptable for solar cell fabrication, the 99% of deep level impurities were concentrated in the last 5% of the ingot. Quite remarkably this material has OCV values higher tham 540 mV and no appreciable shorts due to SiC particles.

New technologies for solar energy silicon - Cost analysis of dichlorosilane process

NASA Technical Reports Server (NTRS)

Yaws, C. L.; Li, K.-Y.; Chu, T. C. T.; Fang, C. S.; Lutwack, R.; Briglio, A., Jr.

1981-01-01

A reduction in the cost of silicon for solar cells is an important objective in a project concerned with the reduction of the cost of electricity produced with solar cells. The cost goal for the silicon material is about $14 per kg (1980 dollars). The process which is currently employed to produce semiconductor grade silicon from trichlorosilane is not suited for meeting this cost goal. Other processes for producing silicon are, therefore, being investigated. A description is presented of results obtained for the DCS process which involves the production of dichlorosilane as a silicon source material for solar energy silicon. Major benefits of dichlorosilane as a silicon source material include faster reaction rates for chemical vapor deposition of silicon. The DCS process involves the reaction 2SiHCl3 yields reversibly SiH2Cl2 + SiCl4. The results of a cost analysis indicate a total product cost without profit of $1.29/kg of SiH2Cl2.

Silicon-on ceramic process: Silicon sheet growth and device development for the large-area silicon sheet task of the low-cost solar array project

NASA Technical Reports Server (NTRS)

Grung, B. L.; Heaps, J. D.; Schmit, F. M.; Schuldt, S. B.; Zook, J. D.

1981-01-01

The technical feasibility of producing solar-cell-quality sheet silicon to meet the Department of Energy (DOE) 1986 overall price goal of $0.70/watt was investigated. With the silicon-on-ceramic (SOC) approach, a low-cost ceramic substrate is coated with large-grain polycrystalline silicon by unidirectional solidification of molten silicon. This effort was divided into several areas of investigation in order to most efficiently meet the goals of the program. These areas include: (1) dip-coating; (2) continuous coating designated SCIM-coating, and acronym for Silicon Coating by an Inverted Meniscus (SCIM); (3) material characterization; (4) cell fabrication and evaluation; and (5) theoretical analysis. Both coating approaches were successful in producing thin layers of large grain, solar-cell-quality silicon. The dip-coating approach was initially investigated and considerable effort was given to this technique. The SCIM technique was adopted because of its scale-up potential and its capability to produce more conventiently large areas of SOC.

Silicon: A Review of Its Potential Role in the Prevention and Treatment of Postmenopausal Osteoporosis

PubMed Central

Price, Charles T.; Koval, Kenneth J.; Langford, Joshua R.

2013-01-01

Physicians are aware of the benefits of calcium and vitamin D supplementation. However, additional nutritional components may also be important for bone health. There is a growing body of the scientific literature which recognizes that silicon plays an essential role in bone formation and maintenance. Silicon improves bone matrix quality and facilitates bone mineralization. Increased intake of bioavailable silicon has been associated with increased bone mineral density. Silicon supplementation in animals and humans has been shown to increase bone mineral density and improve bone strength. Dietary sources of bioavailable silicon include whole grains, cereals, beer, and some vegetables such as green beans. Silicon in the form of silica, or silicon dioxide (SiO2), is a common food additive but has limited intestinal absorption. More attention to this important mineral by the academic community may lead to improved nutrition, dietary supplements, and better understanding of the role of silicon in the management of postmenopausal osteoporosis. PMID:23762049

Release of low molecular weight silicones and platinum from silicone breast implants.

PubMed

Lykissa, E D; Kala, S V; Hurley, J B; Lebovitz, R M

1997-12-01

We have conducted a series of studies addressing the chemical composition of silicone gels from breast implants as well as the diffusion of low molecular weight silicones (LM-silicones) and heavy metals from intact implants into various surrounding media, namely, lipid-rich medium (soy oil), aqueous tissue culture medium (modified Dulbecco's medium, DMEM), or an emulsion consisting of DMEM plus 10% soy oil. LM-silicones in both implants and surrounding media were detected and quantitated using gas chromatography (GC) coupled with atomic emission (GC-AED) as well as mass spectrometric (GC/MS) detectors, which can detect silicones in the nanogram range. Platinum, a catalyst used in the preparation of silicone gels, was detected and quantitated using inductive argon-coupled plasma/mass spectrometry (ICP-MS), which can detect platinum in the parts per trillion range. Our results indicate that GC-detectable low molecular weight silicones contribute approximately 1-2% to the total gel mass and consist predominantly of cyclic and linear poly-(dimethylsiloxanes) ranging from 3 to 20 siloxane [(CH3)2-Si-O] units (molecular weight 200-1500). Platinum can be detected in implant gels at levels of approximately 700 micrograms/kg by ICP-MS. The major component of implant gels appears to be high molecular weight silicone polymers (HM-silicones) too large to be detected by GC. However, these HM-silicones can be converted almost quantitatively (80% by mass) to LM-silicones by heating implant gels at 150-180 degrees C for several hours. We also studied the rates at which LM-silicones and platinum leak through the intact implant outer shell into the surrounding media under a variety of conditions. Leakage of silicones was greatest when the surrounding medium was lipid-rich, and up to 10 mg/day LM-silicones was observed to diffuse into a lipid-rich medium per 250 g of implant at 37 degrees C. This rate of leakage was maintained over a 7-day experimental period. Similarly, platinum was also observed to leak through intact implants into lipid-containing media at rates of approximately 20-25 micrograms/day/250 g of implant at 37 degrees C. The rates at which both LM-silicones and platinum have been observed to leak from intact implants could lead to significant accumulation within lipid-rich tissues and should be investigated more fully in vivo.

Apparatus and method of manufacture for an imager equipped with a cross-talk barrier

NASA Technical Reports Server (NTRS)

Pain, Bedabrata (Inventor)

2012-01-01

An imager apparatus and associated starting material are provided. In one embodiment, an imager is provided including a silicon layer of a first conductivity type acting as a junction anode. Such silicon layer is adapted to convert light to photoelectrons. Also included is a semiconductor well of a second conductivity type formed in the silicon layer for acting as a junction cathode. Still yet, a barrier is formed adjacent to the semiconductor well. In another embodiment, a starting material is provided including a first silicon layer and an oxide layer disposed adjacent to the first silicon layer. Also included is a second silicon layer disposed adjacent to the oxide layer opposite the first silicon layer. Such second silicon layer is further equipped with an associated passivation layer and/or barrier.

Application Of Optical Processing For Growth Of Silicon Dioxide

DOEpatents

Sopori, Bhushan L.

1997-06-17

A process for producing a silicon dioxide film on a surface of a silicon substrate. The process comprises illuminating a silicon substrate in a substantially pure oxygen atmosphere with a broad spectrum of visible and infrared light at an optical power density of from about 3 watts/cm.sup.2 to about 6 watts/cm.sup.2 for a time period sufficient to produce a silicon dioxide film on the surface of the silicon substrate. An optimum optical power density is about 4 watts/cm.sup.2 for growth of a 100.ANG.-300.ANG. film at a resultant temperature of about 400.degree. C. Deep level transient spectroscopy analysis detects no measurable impurities introduced into the silicon substrate during silicon oxide production and shows the interface state density at the SiO.sub.2 /Si interface to be very low.

Magnetic resonance imaging of breast implants.

PubMed

Shah, Mala; Tanna, Neil; Margolies, Laurie

2014-12-01

Silicone breast implants have significantly evolved since their introduction half a century ago, yet implant rupture remains a common and expected complication, especially in patients with earlier-generation implants. Magnetic resonance imaging is the primary modality for assessing the integrity of silicone implants and has excellent sensitivity and specificity, and the Food and Drug Administration currently recommends periodic magnetic resonance imaging screening for silent silicone breast implant rupture. Familiarity with the types of silicone implants and potential complications is essential for the radiologist. Signs of intracapsular rupture include the noose, droplet, subcapsular line, and linguine signs. Signs of extracapsular rupture include herniation of silicone with a capsular defect and extruded silicone material. Specific sequences including water and silicone suppression are essential for distinguishing rupture from other pathologies and artifacts. Magnetic resonance imaging provides valuable information about the integrity of silicone implants and associated complications.

Effects of dispersion solvent on the formation of silicon nanoparticles synthesized via microemulsion route

NASA Astrophysics Data System (ADS)

Liong, W. L.; Sreekantan, S.; Hutagalung, S. D.

2010-05-01

Silicon nanoparticles are synthesized by microemulsion route. Silicon tetrachloride (SiCl4) is used as a silicon source. Meanwhile, hydrazine (N2H5OH), sodium hydroxide (NaOH), and polyethylene glycol (PEG) are used as reduction agent, stabilizer, and capping agent, respectively. In this study, the effects of different solvents (methanol, 1-butanol, 2-propanol, ethanol, acetone, and toluene) on the dispersion and the stabilization of silicon nanoparticles are studied intensively. The results in this study show that ethanol solvent has given smaller particle size, better size distribution, stable suspension and well dispersion of silicon nanoparticles. The diameter of synthesized silicon nanoparticles is in the range of 30-100 nm. Moreover, the absorption edge of silicon nanoparticles in ethanol is observed at a shorter wavelength compared to the others solvent.

Critical technology limits to silicon material and sheet production

NASA Technical Reports Server (NTRS)

Leipold, M. H.

1982-01-01

Earlier studies have indicated that expenditures related to the preparation of high-purity silicon and its conversion to silicon sheet represent from 40 to 52 percent of the cost of the entire panel. The present investigation is concerned with the elements which were selected for study in connection with the Flat-Plate Solar Array (FSA) Project. The first of two technologies which are being developed within the FSA Project involves the conversion of metallurgical-grade silicon through a silane purification process to silicon particles. The second is concerned with the conversion of trichlorosilane to dichlorosilane, and the subsequent production of silicon using modified rod reactors of the Siemens type. With respect to silicon sheet preparation, efforts have been focused both on the preparation of ingots, followed by wafering, and the direct crystallization of molten silicon into a ribbon or film.

Facile Synthesis of Porous Silicon Nanofibers by Magnesium Reduction for Application in Lithium Ion Batteries.

PubMed

Cho, Daehwan; Kim, Moonkyoung; Hwang, Jeonghyun; Park, Jay Hoon; Joo, Yong Lak; Jeong, Youngjin

2015-12-01

We report a facile fabrication of porous silicon nanofibers by a simple three-stage procedure. Polymer/silicon precursor composite nanofibers are first fabricated by electrospinning, a water-based spinning dope, which undergoes subsequent heat treatment and then reduction using magnesium to be converted into porous silicon nanofibers. The porous silicon nanofibers are coated with a graphene by using a plasma-enhanced chemical vapor deposition for use as an anode material of lithium ion batteries. The porous silicon nanofibers can be mass-produced by a simple and solvent-free method, which uses an environmental-friendly polymer solution. The graphene-coated silicon nanofibers show an improved cycling performance of a capacity retention than the pure silicon nanofibers due to the suppression of the volume change and the increase of electric conductivity by the graphene.

Formation of ultra Si/Ti nano thin film for enhancing silicon solar cell efficiency

NASA Astrophysics Data System (ADS)

Adam, T.; Dhahi, T. S.; Mohammed, M.; Al-Hajj, A. M.; Hashim, U.

2017-10-01

An alternative electrical source has l has become the major quest of every researchers due to it numerous advantages and applications of power supply and as electronic devices are becoming more and more portable. A highly efficient power supply is become inevitable. Thus. in this study, present ultrasonic based assisted fabrication of electrochemical silicon-Titanium nano thin film by in-house simple technique, uniformly silicon Nano film was fabricated and etched with HF (40%): C2H5OH (99%):1:1, < 20 nm pore diameter of silicon was fabricated. The surface and morphology reveal that the method produce uniform nano silicon porous layer with smaller silicon pores with high etching efficiency. The silicon-Titanium integrated nano porous exhibited excellent observation properties with low reflection index ~ 1.1 compared to silicon alone thin film.

Improved toughness of silicon carbide

NASA Technical Reports Server (NTRS)

Palm, J. A.

1975-01-01

Several techniques were employed to apply or otherwise form porous layers of various materials on the surface of hot-pressed silicon carbide ceramic. From mechanical properties measurements and studies, it was concluded that although porous layers could be applied to the silicon carbide ceramic, sufficient damage was done to the silicon carbide surface by the processing required so as to drastically reduce its mechanical strength. It was further concluded that there was little promise of success in forming an effective energy absorbing layer on the surface of already densified silicon carbide ceramic that would have the mechanical strength of the untreated or unsurfaced material. Using a process for the pressureless sintering of silicon carbide powders it was discovered that porous layers of silicon carbide could be formed on a dense, strong silicon carbide substrate in a single consolidation process.

Studies on the reactive melt infiltration of silicon and silicon-molybdenum alloys in porous carbon

NASA Technical Reports Server (NTRS)

Singh, M.; Behrendt, D. R.

1992-01-01

Investigations on the reactive melt infiltration of silicon and silicon-1.7 and 3.2 at percent molybdenum alloys into porous carbon preforms have been carried out by process modeling, differential thermal analysis (DTA) and melt infiltration experiments. These results indicate that the initial pore volume fraction of the porous carbon preform is a critical parameter in determining the final composition of the raction-formed silicon carbide and other residual phases. The pore size of the carbon preform is very detrimental to the exotherm temperatures due to liquid silicon-carbon reactions encountered during the reactive melt infiltration process. A possible mechanism for the liquid silicon-porous (glassy) carbon reaction has been proposed. The composition and microstructure of the reaction-formed silicon carbide has been discussed in terms of carbon preform microstructures, infiltration materials, and temperatures.

Development and evaluation of die and container materials. Low cost silicon solar array project

NASA Technical Reports Server (NTRS)

Wills, R. R.; Niesx, D. E.

1979-01-01

Specific compositions of high purity silicon aluminum oxynitride (Sialon) and silicon beryllium oxynitride (Sibeon) solid solutions were shown to be promising refractory materials for handling and manipulating solar grade silicon into silicon ribbon. Evaulation of the interaction of these materials in contact with molten silicon indicated that solid solutions based upon beta-Si3N4 were more stable than those based on Si2N2O. Sibeon was more resistant to molten silicon attack than Sialon. Both materials should preferably be used in an inert atmosphere rather than under vacuum conditions because removal of oxygen from the silicon melt occurs as SiO enhances the dissolution of aluminum and beryllium. The wetting angles of these materials were low enough for these materials to be considered as both die and container materials.

Suppression of interfacial voids formation during silane (SiH4)-based silicon oxide bonding with a thin silicon nitride capping layer

NASA Astrophysics Data System (ADS)

Lee, Kwang Hong; Bao, Shuyu; Wang, Yue; Fitzgerald, Eugene A.; Seng Tan, Chuan

2018-01-01

The material properties and bonding behavior of silane-based silicon oxide layers deposited by plasma-enhanced chemical vapor deposition were investigated. Fourier transform infrared spectroscopy was employed to determine the chemical composition of the silicon oxide films. The incorporation of hydroxyl (-OH) groups and moisture absorption demonstrates a strong correlation with the storage duration for both as-deposited and annealed silicon oxide films. It is observed that moisture absorption is prevalent in the silane-based silicon oxide film due to its porous nature. The incorporation of -OH groups and moisture absorption in the silicon oxide films increase with the storage time (even in clean-room environments) for both as-deposited and annealed silicon oxide films. Due to silanol condensation and silicon oxidation reactions that take place at the bonding interface and in the bulk silicon, hydrogen (a byproduct of these reactions) is released and diffused towards the bonding interface. The trapped hydrogen forms voids over time. Additionally, the absorbed moisture could evaporate during the post-bond annealing of the bonded wafer pair. As a consequence, defects, such as voids, form at the bonding interface. To address the problem, a thin silicon nitride capping film was deposited on the silicon oxide layer before bonding to serve as a diffusion barrier to prevent moisture absorption and incorporation of -OH groups from the ambient. This process results in defect-free bonded wafers.

Silicon nanomaterials platform for bioimaging, biosensing, and cancer therapy.

PubMed

Peng, Fei; Su, Yuanyuan; Zhong, Yiling; Fan, Chunhai; Lee, Shuit-Tong; He, Yao

2014-02-18

Silicon nanomaterials are an important class of nanomaterials with great potential for technologies including energy, catalysis, and biotechnology, because of their many unique properties, including biocompatibility, abundance, and unique electronic, optical, and mechanical properties, among others. Silicon nanomaterials are known to have little or no toxicity due to favorable biocompatibility of silicon, which is an important precondition for biological and biomedical applications. In addition, huge surface-to-volume ratios of silicon nanomaterials are responsible for their unique optical, mechanical, or electronic properties, which offer exciting opportunities for design of high-performance silicon-based functional nanoprobes, nanosensors, and nanoagents for biological analysis and detection and disease treatment. Moreover, silicon is the second most abundant element (after oxygen) on earth, providing plentiful and inexpensive resources for large-scale and low-cost preparation of silicon nanomaterials for practical applications. Because of these attractive traits, and in parallel with a growing interest in their design and synthesis, silicon nanomaterials are extensively investigated for wide-ranging applications, including energy, catalysis, optoelectronics, and biology. Among them, bioapplications of silicon nanomaterials are of particular interest. In the past decade, scientists have made an extensive effort to construct a silicon nanomaterials platform for various biological and biomedical applications, such as biosensors, bioimaging, and cancer treatment, as new and powerful tools for disease diagnosis and therapy. Nonetheless, there are few review articles covering these important and promising achievements to promote the awareness of development of silicon nanobiotechnology. In this Account, we summarize recent representative works to highlight the recent developments of silicon functional nanomaterials for a new, powerful platform for biological and biomedical applications, including biosensor, bioimaging, and cancer therapy. First, we show that the interesting photoluminescence properties (e.g., strong fluorescence and robust photostability) and excellent biocompatibility of silicon nanoparticles (SiNPs) are superbly suitable for direct and long-term visualization of biological systems. The strongly fluorescent SiNPs are highly effective for bioimaging applications, especially for long-term cellular labeling, cancer cell detection, and tumor imaging in vitro and in vivo with high sensitivity. Next, we discuss the utilization of silicon nanomaterials to construct high-performance biosensors, such as silicon-based field-effect transistors (FET) and surface-enhanced Raman scattering (SERS) sensors, which hold great promise for ultrasensitive and selective detection of biological species (e.g., DNA and protein). Then, we introduce recent exciting research findings on the applications of silicon nanomaterials for cancer therapy with encouraging therapeutic outcomes. Lastly, we highlight the major challenges and promises in this field, and the prospect of a new nanobiotechnology platform based on silicon nanomaterials.

Diamond-silicon carbide composite

DOEpatents

Qian, Jiang; Zhao, Yusheng

2006-06-13

Fully dense, diamond-silicon carbide composites are prepared from ball-milled microcrystalline diamond/amorphous silicon powder mixture. The ball-milled powder is sintered (P=5–8 GPa, T=1400K–2300K) to form composites having high fracture toughness. A composite made at 5 GPa/1673K had a measured fracture toughness of 12 MPa.dot.m^1/2. By contrast, liquid infiltration of silicon into diamond powder at 5 GPa/1673K produces a composite with higher hardness but lower fracture toughness. X-ray diffraction patterns and Raman spectra indicate that amorphous silicon is partially transformed into nanocrystalline silicon at 5 GPa/873K, and nanocrystalline silicon carbide forms at higher temperatures.

Diamond-Silicon Carbide Composite And Method For Preparation Thereof

DOEpatents

Qian, Jiang; Zhao, Yusheng

2005-09-06

Fully dense, diamond-silicon carbide composites are prepared from ball-milled microcrystalline diamond/amorphous silicon powder mixture. The ball-milled powder is sintered (P=5-8 GPa, T=1400K-2300K) to form composites having high fracture toughness. A composite made at 5 GPa/1673K had a measured fracture toughness of 12 MPa.multidot.m.sup.1/2. By contrast, liquid infiltration of silicon into diamond powder at 5 GPa/1673K produces a composite with higher hardness but lower fracture toughness. X-ray diffraction patterns and Raman spectra indicate that amorphous silicon is partially transformed into nanocrystalline silicon at 5 GPa/873K, and nanocrystalline silicon carbide forms at higher temperatures.

A comparison of light-harvesting performance of silicon nanocones and nanowires for radial-junction solar cells.

PubMed

Li, Yingfeng; Li, Meicheng; Fu, Pengfei; Li, Ruike; Song, Dandan; Shen, Chao; Zhao, Yan

2015-06-26

Silicon nanorod based radial-junction solar cells are competitive alternatives to traditional planar silicon solar cells. In various silicon nanorods, nanocone is always considered to be better than nanowire in light-absorption. Nevertheless, we find that this notion isn't absolutely correct. Silicon nanocone is indeed significantly superior over nanowire in light-concentration due to its continuous diameters, and thus resonant wavelengths excited. However, the concentrated light can't be effectively absorbed and converted to photogenerated carriers, since its propagation path in silicon nanocone is shorter than that in nanowire. The results provide critical clues for the design of silicon nanorod based radial-junction solar cells.

Taste and mouthfeel assessment of porous and non-porous silicon microparticles

NASA Astrophysics Data System (ADS)

Shabir, Qurrat; Skaria, Cyrus; Brien, Heather O.; Loni, Armando; Barnett, Christian; Canham, Leigh

2012-07-01

Unlike the trace minerals iron, copper and zinc, the semiconductor silicon has not had its organoleptic properties assessed. Nanostructured silicon provides the nutrient orthosilicic acid through hydrolysis in the gastrointestinal tract and is a candidate for oral silicon supplements. Mesoporous silicon, a nanostructured material, is being assessed for both oral drug and nutrient delivery. Here we use taste panels to determine the taste threshold and taste descriptors of both solid and mesoporous silicon in water and chewing gum base. Comparisons are made with a metal salt (copper sulphate) and porous silica. We believe such data will provide useful benchmarks for likely consumer acceptability of silicon supplemented foodstuffs and beverages.

75 FR 31762 - Foreign-Trade Zone 203; Application for Subzone Authority; REC Silicon; Invitation for Public...

Federal Register 2010, 2011, 2012, 2013, 2014

2010-06-04

... orders. A key consideration in this request is the cumulative effect on domestic silicon metal prices and... applications to avoid AD/CVD duties on silicon metal for export production. In addition to the REC Silicon... those of the other U.S. producers, the ripple effect on silicon metal suppliers would be significant and...

78 FR 61334 - Silicon Metal From the Russian Federation: Final Results of the Expedited Second Sunset Review of...

Federal Register 2010, 2011, 2012, 2013, 2014

2013-10-03

...\\ See Antidumping Duty Order: Silicon Metal From Russia, 68 FR 14578 (March 26, 2003) (Antidumping Duty... the antidumping duty order on silicon metal from Russia. As a result of this sunset review, the... includes silicon metal from Russia containing between 89.00 and 96.00 percent silicon by weight, but...

Quantitative Analysis of Defects in Silicon. Silicon Sheet Growth Development for the Large Area Silicon Sheet Task of the Low-cost Solar Array Project

NASA Technical Reports Server (NTRS)

Natesh, R.; Smith, J. M.; Qidwai, H. A.

1979-01-01

The various steps involved in the chemical polishing and etching of silicon samples are described. Data on twins, dislocation pits, and grain boundaries from thirty-one (31) silicon sample are also discussed. A brief review of the changes made to upgrade the image analysis system is included.

The effect of vitrectomy with silicone oil tamponade on intraocular pressure and anterior chamber morphology.

PubMed

Suic, S P; Sikić, J

2001-01-01

We measured the tamponading effect of silicone oil, saline and air after vitrectomy, on intraocular pressure and aqueous humor outflow in 85 patients with highly proliferative retina and vitreous changes. Silicone oil as retinal tamponading agent after vitrectomy was used in 45 patients, and saline or air in 39 patients. The mean intraocular pressure measured at one month after treatment was greatly elevated in patients with silicone oil tamponade as compared to those with saline or air tamponade. At 6 and 12 months examinations, mean intraocular pressures were compared in these two groups of patients. Gonioscopy revealed silicone oil emulsification and presence of emulsified bubbles in the anterior chamber in 22.22% of patients, and narrowing of the chamber angle in several patients with silicone oil tamponade. Intraocular pressure elevation following vitrectomy with silicone oil tamponade was found to be of transient rather than permanent nature, since it regressed after silicone oil removal. This transient elevation was due to silicone oil tendency to emulsify. Silicone oil bubbles changed the morphology of the anterior chamber angle and fine trabecular structures by creating a barrier to aqueous humor outflow.

Prevention of postsurgical scars: comparsion of efficacy and convenience between silicone gel sheet and topical silicone gel.

PubMed

Kim, Sue-Min; Choi, Jung-Sik; Lee, Jung-Ho; Kim, Young-Jin; Jun, Young-Joon

2014-11-01

To date, few studies have compared the effectiveness of topical silicone gels versus that of silicone gel sheets in preventing scars. In this prospective study, we compared the efficacy and the convenience of use of the 2 products. We enrolled 30 patients who had undergone a surgical procedure 2 weeks to 3 months before joining the study. These participants were randomly assigned to 2 treatment arms: one for treatment with a silicone gel sheet, and the other for treatment with a topical silicone gel. Vancouver Scar Scale (VSS) scores were obtained for all patients; in addition, participants completed scoring patient questionnaires 1 and 3 months after treatment onset. Our results reveal not only that no significant difference in efficacy exists between the 2 products but also that topical silicone gels are more convenient to use. While previous studies have advocated for silicone gel sheets as first-line therapies in postoperative scar management, we maintain that similar effects can be expected with topical silicone gel. The authors recommend that, when clinicians have a choice of silicone-based products for scar prevention, they should focus on each patient's scar location, lifestyle, and willingness to undergo scar prevention treatment.

Vapor Pressure and Evaporation Coefficient of Silicon Monoxide over a Mixture of Silicon and Silica

NASA Technical Reports Server (NTRS)

Ferguson, Frank T.; Nuth, Joseph A., III

2012-01-01

The evaporation coefficient and equilibrium vapor pressure of silicon monoxide over a mixture of silicon and vitreous silica have been studied over the temperature range (1433 to 1608) K. The evaporation coefficient for this temperature range was (0.007 plus or minus 0.002) and is approximately an order of magnitude lower than the evaporation coefficient over amorphous silicon monoxide powder and in general agreement with previous measurements of this quantity. The enthalpy of reaction at 298.15 K for this reaction was calculated via second and third law analyses as (355 plus or minus 25) kJ per mol and (363.6 plus or minus 4.1) kJ per mol respectively. In comparison with previous work with the evaporation of amorphous silicon monoxide powder as well as other experimental measurements of the vapor pressure of silicon monoxide gas over mixtures of silicon and silica, these systems all tend to give similar equilibrium vapor pressures when the evaporation coefficient is correctly taken into account. This provides further evidence that amorphous silicon monoxide is an intimate mixture of small domains of silicon and silica and not strictly a true compound.

Surface Coating of Gypsum-Based Molds for Maxillofacial Prosthetic Silicone Elastomeric Material: The Surface Topography.

PubMed

Khalaf, Salah; Ariffin, Zaihan; Husein, Adam; Reza, Fazal

2015-07-01

This study aimed to compare the surface roughness of maxillofacial silicone elastomers fabricated in noncoated and coated gypsum materials. This study was also conducted to characterize the silicone elastomer specimens after surfaces were modified. A gypsum mold was coated with clear acrylic spray. The coated mold was then used to produce modified silicone experimental specimens (n = 35). The surface roughness of the modified silicone elastomers was compared with that of the control specimens, which were prepared by conventional flasking methods (n = 35). An atomic force microscope (AFM) was used for surface roughness measurement of silicone elastomer (unmodified and modified), and a scanning electron microscope (SEM) was used to evaluate the topographic conditions of coated and noncoated gypsum and silicone elastomer specimens (unmodified and modified) groups. After the gypsum molds were characterized, the fabricated silicone elastomers molded on noncoated and coated gypsum materials were evaluated further. Energy-dispersive X-ray spectroscopy (EDX) analysis of gypsum materials (noncoated and coated) and silicone elastomer specimens (unmodified and modified) was performed to evaluate the elemental changes after coating was conducted. Independent t test was used to analyze the differences in the surface roughness of unmodified and modified silicone at a significance level of p < 0.05. Roughness was significantly reduced in the silicone elastomers processed against coated gypsum materials (p < 0.001). The AFM and SEM analysis results showed evident differences in surface smoothness. EDX data further revealed the presence of the desired chemical components on the surface layer of unmodified and modified silicone elastomers. Silicone elastomers with lower surface roughness of maxillofacial prostheses can be obtained simply by coating a gypsum mold. © 2014 by the American College of Prosthodontists.

Silicon improves seed germination and alleviates oxidative stress of bud seedlings in tomato under water deficit stress.

PubMed

Shi, Yu; Zhang, Yi; Yao, Hejin; Wu, Jiawen; Sun, Hao; Gong, Haijun

2014-05-01

The beneficial effects of silicon on plant growth and development under drought have been widely reported. However, little information is available on the effects of silicon on seed germination under drought. In this work, the effects of exogenous silicon (0.5 mM) on the seed germination and tolerance performance of tomato (Solanum lycopersicum L.) bud seedlings under water deficit stress simulated by 10% (w/v) polyethylene glycol (PEG-6000) were investigated in four cultivars ('Jinpengchaoguan', 'Zhongza No.9', 'Houpi L402' and 'Oubao318'). The results showed that the seed germination percentage was notably decreased in the four cultivars under water stress, and it was significantly improved by added silicon. Compared with the non-silicon treatment, silicon addition increased the activities of superoxide dismutase (SOD) and catalase (CAT), and decreased the production of superoxide anion (O2·) and hydrogen peroxide (H2O2) in the radicles of bud seedlings under water stress. Addition of silicon decreased the total phenol concentrations in radicles under water stress, which might contribute to the decrease of peroxidase (POD) activity, as observed in the in vivo and in vitro experiments. The decrease of POD activity might contribute to a less accumulation of hydroxyl radical (·OH) under water stress. Silicon addition also decreased the concentrations of malondialdehyde (MDA) in the radicles under stress, indicating decreased lipid peroxidation. These results suggest that exogenous silicon could improve seed germination and alleviate oxidative stress to bud seedling of tomato by enhancing antioxidant defense. The positive effects of silicon observed in a silicon-excluder also suggest the active involvement of silicon in biochemical processes in plants. Copyright © 2014 Elsevier Masson SAS. All rights reserved.

Single-Event Effects in Silicon and Silicon Carbide Power Devices

NASA Technical Reports Server (NTRS)

Lauenstein, Jean-Marie; Casey, Megan C.; LaBel, Kenneth A.; Topper, Alyson D.; Wilcox, Edward P.; Kim, Hak; Phan, Anthony M.

2014-01-01

NASA Electronics Parts and Packaging program-funded activities over the past year on single-event effects in silicon and silicon carbide power devices are presented, with focus on SiC device failure signatures.

Characterization of the initial level and migration of silicone oil lubricant in empty prefilled syringes for biologics using infrared spectroscopy.

PubMed

Bee, Jared S; Frey, Vadim V; Javed, Urooj; Chung, Jonathan; Corcoran, Marta L; Roussel, Paul S; Krause, Stephan O; Cash, Patricia W; Bishop, Steven M; Dimitrova, Mariana N

2014-01-01

Glass prefillable syringes are lubricated with silicone oil to ensure functionality and a consistent injection for the end user. If excessive silicone is applied, droplets could potentially result in aggregation of sensitive biopharmaceuticals or clouding of the solution. Therefore, monitoring and optimization of the applied silicone layer is critical for prefilled syringe development. The hydrophobic properties of silicone oil, the potential for assay interference, and the very small quantities applied to prefilled syringes present a challenge for the development of a suitable assay. In this work we present a rapid and simple Fourier transform infrared (FTIR) spectroscopy method for quantitation of total silicone levels applied to prefilled syringes. Level-dependent silicone oil migration occurred over time for empty prefilled syringes stored tip-up. However, migration from all prefilled syringes with between 0.25 and 0.8 mg of initial silicone oil resulted in a stable limiting minimum level of between 0.15 and 0.26 mg of silicone in the syringe reached after 1 to 4 years of empty tip-up storage. The results of the FTIR assay correlated well with non-destructive reflectometry characterization of the syringes. This assay can provide valuable data for selection of a robust initial silicone oil target and quality control of prefilled syringes intended for biopharmaceuticals. Glass prefillable syringes are lubricated with silicone oil to ensure functionality and a consistent injection for the end user. If excessive silicone is applied, droplets could potentially result in aggregation of sensitive biopharmaceuticals or clouding of the solution. Therefore, monitoring and optimization of the applied silicone layer is critical for prefilled syringe development. The hydrophobic properties of silicone oil, the potential for assay interference, and the very small quantities applied to prefilled syringes present a challenge for the development of a suitable assay. In this work we present a rapid and simple Fourier transform infrared (FTIR) spectroscopy method for quantitation of total silicone levels applied to prefilled syringes. Level-dependent silicone oil migration occurred over time for empty prefilled syringes stored tip-up. However, migration from all prefilled syringes with between 0.25 and 0.8 mg of initial silicone oil resulted in a stable limiting minimum level of between 0.15 and 0.26 mg of silicone in the syringe reached after 1 to 4 years of empty tip-up storage. The results of the FTIR assay correlated well with non-destructive reflectometry characterization of the syringes. This assay can provide valuable data for selection of a robust initial silicone oil target and quality control of prefilled syringes intended for biopharmaceuticals. © PDA, Inc. 2014.

Silicon solar cell process development, fabrication and analysis

NASA Technical Reports Server (NTRS)

Minahan, J. A.

1981-01-01

The fabrication of solar cells from several unconventional silicon materials is described, and cell performance measured and analyzed. Unconventional materials evaluated are edge defined film fed grown (EFG), heat exchanger method (HEM), dendritic web grown, and continuous CZ silicons. Resistivity, current voltage, and spectral sensitivity of the cells were measured. Current voltage was measured under AM0 and AM1 conditions. Maximum conversion efficiencies of cells fabricated from these and other unconventional silicons were compared and test results analyzed. The HEM and continuous CZ silicon were found to be superior to silicon materials considered previously.

Synthesis and devolatilization of M-97 NVB silicone gum compounded into silica reinforced silicone base

DOE Office of Scientific and Technical Information (OSTI.GOV)

Schneider, J.W.

1986-06-01

Silica reinforced silicon bases having 0.31 weight percent vinyl content were prepared by using a blend of low and high vinyl content devolatilized M-97 NVB silicone gum. The M-97 NVB is a custom dimethyl-, diphenyl-, methylvinylsiloxane gum. The silicon gum was devolatilized to evaluate the anticipated improved handling characteristics. Previous procured batches of M-97 NVB had not been devolatilized and difficult handling problems were encountered. The synthesis, devolatilization, and compound processes for the M-97 NVB silicone gum are discussed.