Hydrogen content and mechanical stress in glow discharge amorphous silicon

NASA Astrophysics Data System (ADS)

Paduschek, P.; Eichinger, P.; Kristen, G.; Mitlehner, H.

1982-08-01

The hydrogen content of plasma deposited amorphous silicon thin films on silicon has been determined as a function of annealing parameters (200-700°C, 12 h) using the proton-proton scattering method. It is shown that hydrogen is released with an activation energy of 1.3 eV. Different deposition temperatures are compared with respect to the hydrogen evolution. The mechanical stress of the layers on silicon substrates has been measured by interferometric techniques for each annealing step. As the hydrogen content decreases monotonically with rising annealing temperature the mechanical stress converts from compressive to tensile. While only a weak correlation exists between the total hydrogen content and the mechanical stress, the bound hydrogen as determined by IR absorption displays a linear relation with the measured mechanical stress.

Equilibrium water and solute uptake in silicone hydrogels.

PubMed

Liu, D E; Dursch, T J; Oh, Y; Bregante, D T; Chan, S Y; Radke, C J

2015-05-01

Equilibrium water content of and solute partitioning in silicone hydrogels (SiHys) are investigated using gravimetric analysis, fluorescence confocal laser-scanning microscopy (FCLSM), and back extraction with UV/Vis-absorption spectrophotometry. Synthesized silicone hydrogels consist of silicone monomer, hydrophilic monomer, cross-linking agent, and triblock-copolymer macromer used as an amphiphilic compatibilizer to prevent macrophase separation. In all cases, immiscibility of the silicone and hydrophilic polymers results in microphase-separated morphologies. To investigate solute uptake in each of the SiHy microphases, equilibrium partition coefficients are obtained for two hydrophilic solutes (i.e., theophylline and caffeine dissolved in aqueous phosphate-buffered saline) and two oleophilic solutes (i.e., Nile Red and Bodipy Green dissolved in silicone oil), respectively. Measured water contents and aqueous-solute partition coefficients increase linearly with increasing solvent-free hydrophilic-polymer volume fraction. Conversely, oleophilic-solute partition coefficients decrease linearly with rising solvent-free hydrophilic-polymer volume fraction (i.e., decreasing hydrophobic silicone-polymer fraction). We quantitatively predict equilibrium SiHy water and solute uptake assuming that water and aqueous solutes reside only in hydrophilic microdomains, whereas oleophilic solutes partition predominately into silicone microdomains. Predicted water contents and solute partition coefficients are in excellent agreement with experiment. Our new procedure permits a priori estimation of SiHy water contents and solute partition coefficients based solely on properties of silicone and hydrophilic homopolymer hydrogels, eliminating the need for further mixed-polymer-hydrogel experiments. Copyright © 2015 Acta Materialia Inc. Published by Elsevier Ltd. All rights reserved.

Silicon content design of CrSiN films for good anti-corrosion and anti-wear performances in NaOH solution

NASA Astrophysics Data System (ADS)

Wang, Haixin; Ye, Yuwei; Wang, Chunting; Zhang, Guangan; Liu, Wei

2018-06-01

The CrSiN films with different silicon contents were fabricated by medium frequency magnetron sputtering. The 304L stainless steel and Si (1 0 0) wafer were used for substrate specimens. Film plasticity, corrosion and tribological behaviors in 0.1 M NaOH solution were systematically investigated. Results show that the plasticity of CrN film could be improved by the addition of silicon. During the corrosion test, with the increase of silicon content, the corrosion current density exhibited a descending trend and impedance presented a rising trend. The COF and wear rate of as-prepared CrSiN film initially decreased and then increased as the silicon content increased. The CrSiN film with 12.7 at.% Si exhibited the lowest COF of 0.04 and a wear rate of 6.746  ×  10‑8 mm3 Nm‑1 in 0.1 M NaOH solution.

Development and Validity of a Silicone Renal Tumor Model for Robotic Partial Nephrectomy Training.

PubMed

Monda, Steven M; Weese, Jonathan R; Anderson, Barrett G; Vetter, Joel M; Venkatesh, Ramakrishna; Du, Kefu; Andriole, Gerald L; Figenshau, Robert S

2018-04-01

To provide a training tool to address the technical challenges of robot-assisted laparoscopic partial nephrectomy, we created silicone renal tumor models using 3-dimensional printed molds of a patient's kidney with a mass. In this study, we assessed the face, content, and construct validity of these models. Surgeons of different training levels completed 4 simulations on silicone renal tumor models. Participants were surveyed on the usefulness and realism of the model as a training tool. Performance was measured using operation-specific metrics, self-reported operative demands (NASA Task Load Index [NASA TLX]), and blinded expert assessment (Global Evaluative Assessment of Robotic Surgeons [GEARS]). Twenty-four participants included attending urologists, endourology fellows, urology residents, and medical students. Post-training surveys of expert participants yielded mean results of 79.2 on the realism of the model's overall feel and 90.2 on the model's overall usefulness for training. Renal artery clamp times and GEARS scores were significantly better in surgeons further in training (P ≤.005 and P ≤.025). Renal artery clamp times, preserved renal parenchyma, positive margins, NASA TLX, and GEARS scores were all found to improve across trials (P <.001, P = .025, P = .024, P ≤.020, and P ≤.006, respectively). Face, content, and construct validity were demonstrated in the use of a silicone renal tumor model in a cohort of surgeons of different training levels. Expert participants deemed the model useful and realistic. Surgeons of higher training levels performed better than less experienced surgeons in various study metrics, and improvements within individuals were observed over sequential trials. Future studies should aim to assess model predictive validity, namely, the association between model performance improvements and improvements in live surgery. Copyright © 2018 Elsevier Inc. All rights reserved.

Uptake of Silicon by Sugarcane from Applied Sources May Not Reflect Plant-Available Soil Silicon and Total Silicon Content of Sources.

PubMed

Keeping, Malcolm G

2017-01-01

Soils of the tropics and sub-tropics are typically acid and depleted of soluble sources of silicon (Si) due to weathering and leaching associated with high rainfall and temperatures. Together with intensive cropping, this leads to marginal or deficient plant Si levels in Si-accumulating crops such as rice and sugarcane. Although such deficiencies can be corrected with exogenous application of Si sources, there is controversy over the effectiveness of sources in relation to their total Si content, and their capacity to raise soil and plant Si concentrations. This study tested the hypothesis that the total Si content and provision of plant-available Si from six sources directly affects subsequent plant Si uptake as reflected in leaf Si concentration. Two trials with potted cane plants were established with the following Si sources as treatments: calcium silicate slag, fused magnesium (thermo) phosphate, volcanic rock dust, magnesium silicate, and granular potassium silicate. Silicon sources were applied at rates intended to achieve equivalent elemental soil Si concentrations; controls were untreated or lime-treated. Analyses were conducted to determine soil and leaf elemental concentrations. Among the sources, calcium silicate produced the highest leaf Si concentrations, yet lower plant-available soil Si concentrations than the thermophosphate. The latter, with slightly higher total Si than the slag, produced substantially greater increases in soil Si than all other products, yet did not significantly raise leaf Si above the controls. All other sources did not significantly increase soil or leaf Si concentrations, despite their high Si content. Hence, the total Si content of sources does not necessarily concur with a product's provision of soluble soil Si and subsequent plant uptake. Furthermore, even where soil pH was raised, plant uptake from thermophosphate was well below expectation, possibly due to its limited liming capacity. The ability of the calcium silicate to provide Si while simultaneously and significantly increasing soil pH, and thereby reducing reaction of Si with exchangeable Al 3+ , is proposed as a potential explanation for the greater Si uptake into the shoot from this source.

Uptake of Silicon by Sugarcane from Applied Sources May Not Reflect Plant-Available Soil Silicon and Total Silicon Content of Sources

PubMed Central

Keeping, Malcolm G.

2017-01-01

Soils of the tropics and sub-tropics are typically acid and depleted of soluble sources of silicon (Si) due to weathering and leaching associated with high rainfall and temperatures. Together with intensive cropping, this leads to marginal or deficient plant Si levels in Si-accumulating crops such as rice and sugarcane. Although such deficiencies can be corrected with exogenous application of Si sources, there is controversy over the effectiveness of sources in relation to their total Si content, and their capacity to raise soil and plant Si concentrations. This study tested the hypothesis that the total Si content and provision of plant-available Si from six sources directly affects subsequent plant Si uptake as reflected in leaf Si concentration. Two trials with potted cane plants were established with the following Si sources as treatments: calcium silicate slag, fused magnesium (thermo) phosphate, volcanic rock dust, magnesium silicate, and granular potassium silicate. Silicon sources were applied at rates intended to achieve equivalent elemental soil Si concentrations; controls were untreated or lime-treated. Analyses were conducted to determine soil and leaf elemental concentrations. Among the sources, calcium silicate produced the highest leaf Si concentrations, yet lower plant-available soil Si concentrations than the thermophosphate. The latter, with slightly higher total Si than the slag, produced substantially greater increases in soil Si than all other products, yet did not significantly raise leaf Si above the controls. All other sources did not significantly increase soil or leaf Si concentrations, despite their high Si content. Hence, the total Si content of sources does not necessarily concur with a product's provision of soluble soil Si and subsequent plant uptake. Furthermore, even where soil pH was raised, plant uptake from thermophosphate was well below expectation, possibly due to its limited liming capacity. The ability of the calcium silicate to provide Si while simultaneously and significantly increasing soil pH, and thereby reducing reaction of Si with exchangeable Al3+, is proposed as a potential explanation for the greater Si uptake into the shoot from this source. PMID:28555144

Deposition of device quality low H content, amorphous silicon films

DOEpatents

Mahan, A.H.; Carapella, J.C.; Gallagher, A.C.

1995-03-14

A high quality, low hydrogen content, hydrogenated amorphous silicon (a-Si:H) film is deposited by passing a stream of silane gas (SiH{sub 4}) over a high temperature, 2,000 C, tungsten (W) filament in the proximity of a high temperature, 400 C, substrate within a low pressure, 8 mTorr, deposition chamber. The silane gas is decomposed into atomic hydrogen and silicon, which in turn collides preferably not more than 20--30 times before being deposited on the hot substrate. The hydrogenated amorphous silicon films thus produced have only about one atomic percent hydrogen, yet have device quality electrical, chemical, and structural properties, despite this lowered hydrogen content. 7 figs.

Deposition of device quality low H content, amorphous silicon films

DOEpatents

Mahan, Archie H.; Carapella, Jeffrey C.; Gallagher, Alan C.

1995-01-01

A high quality, low hydrogen content, hydrogenated amorphous silicon (a-Si:H) film is deposited by passing a stream of silane gas (SiH.sub.4) over a high temperature, 2000.degree. C., tungsten (W) filament in the proximity of a high temperature, 400.degree. C., substrate within a low pressure, 8 mTorr, deposition chamber. The silane gas is decomposed into atomic hydrogen and silicon, which in turn collides preferably not more than 20-30 times before being deposited on the hot substrate. The hydrogenated amorphous silicon films thus produced have only about one atomic percent hydrogen, yet have device quality electrical, chemical, and structural properties, despite this lowered hydrogen content.

Metal-insulator transition properties of sputtered silicon-doped and un-doped vanadium dioxide films at terahertz range

NASA Astrophysics Data System (ADS)

Zhang, Huafu; Wu, Zhiming; Niu, Ruihua; Wu, Xuefei; he, Qiong; Jiang, Yadong

2015-03-01

Silicon-doped and un-doped vanadium dioxide (VO2) films were synthesized on high-purity single-crystal silicon substrates by means of reactive direct current magnetron sputtering followed by thermal annealing. The structure, morphology and metal-insulator transition properties of silicon-doped VO2 films at terahertz range were measured and compared to those of un-doped VO2 films. X-ray diffraction and scanning electron microscopy indicated that doping the films with silicon significantly affects the preferred crystallographic orientation and surface morphologies (grain size, pores and characteristics of grain boundaries). The temperature dependence of terahertz transmission shows that the transition temperature, hysteresis width and transition sharpness greatly depend on the silicon contents while the transition amplitude was relatively insensitive to the silicon contents. Interestingly, the VO2 film doped with a silicon content of 4.6 at.% shows excellent terahertz switching characteristics, namely a small hysteresis width of 4.5 °C, a giant transmission modulation ratio of about 82% and a relatively low transition temperature of 56.1 °C upon heating. This work experimentally indicates that silicon doping can effectively control not only the surface morphology but also the metal-insulator transition characteristics of VO2 films at terahertz range.

Research on the Dielectric Properties of Nano-ZnO/Silicone Rubber Composites

NASA Astrophysics Data System (ADS)

Wang, Fei-feng; Yan, Dan-dan; Su, Yi; Lu, Yu-feng; Xia, Xiao-fei; Huang, Hui-min

2017-09-01

The samples of 1%, 2%, 3% and 4% Zinc Oxide (ZnO) nano-composite silicone rubber were prepared by mechanical method. The dielectric properties of each sample were measured by dielectric spectroscopy. The experimental results showed that the dielectric constant of the silicone rubber composite increases with the increase of the content of nano-ZnO. The breakdown test results showed that with the increase of the content of nano-ZnO, the breakdown strength of silicone rubber composites increased first and then decreased. The breakdown test results indicate that the nano-ZnO can reduce the breakdown strength of silicone rubber. The hydrophobic test results showed that nano-ZnO will reduce the hydrophobic of silicone rubber.

Doping porous silicon with erbium: pores filling as a method to limit the Er-clustering effects and increasing its light emission.

PubMed

Mula, Guido; Printemps, Tony; Licitra, Christophe; Sogne, Elisa; D'Acapito, Francesco; Gambacorti, Narciso; Sestu, Nicola; Saba, Michele; Pinna, Elisa; Chiriu, Daniele; Ricci, Pier Carlo; Casu, Alberto; Quochi, Francesco; Mura, Andrea; Bongiovanni, Giovanni; Falqui, Andrea

2017-07-20

Er clustering plays a major role in hindering sufficient optical gain in Er-doped Si materials. For porous Si, the long-standing failure to govern the clustering has been attributed to insufficient knowledge of the several, concomitant and complex processes occurring during the electrochemical Er-doping. We propose here an alternative road to solve the issue: instead of looking for an equilibrium between Er content and light emission using 1-2% Er, we propose to significantly increase the electrochemical doping level to reach the filling the porous silicon pores with luminescent Er-rich material. To better understand the intricate and superposing phenomena of this process, we exploit an original approach based on needle electron tomography, EXAFS and photoluminescence. Needle electron tomography surprisingly shows a heterogeneous distribution of Er content in the silicon thin pores that until now couldn't be revealed by the sole use of scanning electron microscopy compositional mapping. Besides, while showing that pore filling leads to enhanced photoluminescence emission, we demonstrate that the latter is originated from both erbium oxide and silicate. These results give a much deeper understanding of the photoluminescence origin down to nanoscale and could lead to novel approaches focused on noteworthy enhancement of Er-related photoluminescence in porous silicon.

Process for purification of silicon

NASA Technical Reports Server (NTRS)

Rath, H. J.; Sirtl, E.; Pfeiffer, W.

1981-01-01

The purification of metallurgically pure silicon having a silicon content of more than 95% by weight is accomplished by leaching with an acidic solution which substantially does not attack silicon. A mechanical treatment leading to continuous particle size reduction of the granulated silicon to be purified is combined with the chemical purification step.

Determination of the pure silicon monocarbide content of silicon carbide and products based on silicon carbide

NASA Technical Reports Server (NTRS)

Prost, L.; Pauillac, A.

1978-01-01

Experience has shown that different methods of analysis of SiC products give different results. Methods identified as AFNOR, FEPA, and manufacturer P, currently used to detect SiC, free C, free Si, free Fe, and SiO2 are reviewed. The AFNOR method gives lower SiC content, attributed to destruction of SiC by grinding. Two products sent to independent labs for analysis by the AFNOR and FEPA methods showed somewhat different results, especially for SiC, SiO2, and Al2O3 content, whereas an X-ray analysis showed a SiC content approximately 10 points lower than by chemical methods.

Effect of irrigation and silicon fertilizer on total rice grain arsenic content and yield

USDA-ARS?s Scientific Manuscript database

Field tests were conducted for two years with rice grown with different irrigation systems and rates of calcium silicate fertilizer to determine the effects on brown rice arsenic (As) levels and rough rice yields. Irrigation systems were sprinkler irrigation using a center pivot system, intermitten...

Foliar application with nano-silicon alleviates Cd toxicity in rice seedlings.

PubMed

Wang, Shihua; Wang, Fayuan; Gao, Shuangcheng

2015-02-01

Nanofertilizers may be more effective than regular fertilizers in improving plant nutrition, enhancing nutrition use efficiency, and protecting plants from environmental stress. A hydroponic pot experiment was conducted to study the role of foliar application with 2.5 mM nano-silicon in alleviating Cd stress in rice seedlings (Oryza sativa L. cv Youyou 128) grown in solution added with or without 20 μM CdCl2. The results showed that Cd treatment decreased the growth and the contents of Mg, Fe, Zn, chlorophyll a, and glutathione (GSH), accompanied by a significant increase in Cd accumulation. However, foliar application with nano-Si improved the growth, Mg, Fe, and Zn nutrition, and the contents of chlorophyll a of the rice seedlings under Cd stress and decreased Cd accumulation and translocation of Cd from root to shoot. Cd treatment produced oxidative stress to rice seedlings indicated by a higher lipid peroxidation level (as malondialdehyde (MDA)) and higher activities of antioxidant enzymes such as superoxide dismutase (SOD), peroxidase (POD), and catalase (CAT), and a lower GSH content. However, those nano-Si-treated plants had lower MDA but higher GSH content and different antioxidant enzyme activities, indicating a higher Cd tolerance in them. The results suggested that nano-Si application alleviated Cd toxicity in rice by decreasing Cd accumulation, Cd partitioning in shoot and MDA level and by increasing content of some mineral elements (Mg, Fe, and Zn) and antioxidant capacity.

Silicon and water-deficit stress differentially modulate physiology and ultrastructure in wheat (Triticum aestivum L.).

PubMed

Xu, Ling; Islam, Faisal; Ali, Basharat; Pei, Zengfei; Li, Juanjuan; Ghani, Muhammad Awais; Zhou, Weijun

2017-08-01

Plants combat drought stress by coordinating various metabolic enzymes, and endogenous phytohormones, such as indole acetic acid (IAA) and abscisic acid (ABA). In the present study, 37-day-old wheat seedlings were subjected to the Hoagland solution with 20% PEG for 7 days (to create the artificial osmotic stress environment) in the greenhouse, and were supplemented with an optimized concentration (1.0 mM) of silicon (Si) to alleviate the negative effects of former stress on physiological, biochemical and phytohormones contents. Exogenous Si significantly improved plant growth parameters under osmotic stress compared to PEG treatment alone (the increase was up to 6 and 9% for shoot and root fresh weight, 4 and 12% for shoot and root dry weight, respectively). Moreover, Si significantly decreased the H 2 O 2 , MDA contents, electrolyte leakage, antioxidant enzyme activity (POD), and mineral contents (K and Ca) under osmotic stress but markedly increased the ascorbic acid(AsA), soluble sugar and mineral (Mg and Si) contents. Interestingly, Si application under water-deficit stress differently modulated the endogenous levels of ABA, IAA and JA in wheat plants compared to PEG treatment alone. This study suggests that exogenous Si improves the plant growth by modulating the nutrient (Na, Mg and Si) uptake and phytohormone levels in wheat under water-deficit stress.

Structure and compressive strength of silicon open-cell foam obtained by a centrifugal separation method

NASA Astrophysics Data System (ADS)

Cho, Ju-Young; Kim, Ki-Young

2013-03-01

The present study describes a new way to make an open-cell silicon foam from an Al-Si alloy melt by centrifugation during its solidification. The effects of the silicon content and the chute diameter of the crucible on the morphology, the density and the compressive strength of the silicon foams were investigated. A vertical-type centrifugal separator was designed to push the unfrozen Al-Si melt outside, leaving only the silicon foam inside the crucible during rotation. Alloys in the Al-Si system with silicon contents of 40 and 50 wt% were prepared by an electrical resistance furnace, and the revolution of the centrifugal separator was controlled to fabricate the foam. Open-cell silicon foams could be obtained successfully. The apparent density and the compressive strength were in the ranges of 620-820 kg/m3 and 7.5-14.5 MPa, respectively.

Piezoresistive silicon pressure sensors in cryogenic environment

NASA Technical Reports Server (NTRS)

Kahng, Seun K.; Chapman, John J.

1989-01-01

This paper presents data on low-temperature measurements of silicon pressure sensors. It was found that both the piezoresistance coefficients and the charge-carrier mobility increase with decreasing temperature. For lightly doped semiconductor materials, the density of free charge carriers decreases with temperature and can freeze out eventually. However, the effect of carrier freeze-out can be minimized by increasing the impurity content to higher levels, at which the temperature dependency of piezoresistance coefficients is reduced. An impurity density of 1 x 10 to the 19th/cu cm was found to be optimal for cryogenic applications of pressure sensor dies.

Silicon Materials Task of the Low Cost Solar Array Project, Phase 3. Effect of Impurities and Processing on Silicon Solar Cells

NASA Technical Reports Server (NTRS)

Hopkins, R. H.; Davis, J. R.; Blais, P. D.; Rohatgi, A.; Campbell, R. B.; Rai-Choudhury, P.; Stapleton, R. E.; Mollenkopf, H. C.; Mccormick, J. R.

1979-01-01

The effects of impurities, various thermochemical processes, and any impurity process interactions on the performance of terrestrial silicon solar cells are defined. Determinations of the segregation coefficients of tungsten, tantalum, and cobalt for the Czochralski pulling of silicon single crystals are reported. Sensitive neutron activation analysis was used to determine the metal impurity content of the silicon while atomic absorption was used to measure the metal content of the residual liquid from which the doped crystals were grown. Gettering of Ti doped silicon wafers improved cell performance by one to two percent for the highest temperatures and longest times. The HCl is more effective than POCl3 treatments for deactivating Ti but POCl3 and HCl produced essentially identical results for Mo or Fe.

Piezoresistive strain sensing of carbon black /silicone composites above percolation threshold

NASA Astrophysics Data System (ADS)

Shang, Shuying; Yue, Yujuan; Wang, Xiaoer

2016-12-01

A series of flexible composites with a carbon black (CB) filled silicone rubber matrix were made by an improved process in this work. A low percolation threshold with a mass ratio of 2.99% CB was achieved. The piezoresistive behavior of CB/silicone composites above the critical value, with the mass ratio of carbon black to the silicone rubber ranging from 0.01 to 0.2, was studied. The piezoresistive behavior was different from each other for the composites with different CB contents. But, the composites show an excellent repeatability of piezoresistivity under cyclic compression, no matter with low filler content or with high filler content. The most interesting phenomena were that the plots of gauge factor versus strain of the composites with different CB contents constructed a master curve and the curve could be well fitted by a function. It was showed that the gauge factor of the composites was strain-controlled showing a promising prospect of application.

Growth of High Purity Oxygen-Free Silicon by Cold Crucible Techniques.

DTIC Science & Technology

1982-06-01

Liquid Metals (A Review). High Temp.-High Pressures 2(6), 583-586, 1970. 1971 Knights, C.F. and Perkins, R. Levitation Melting of Uranium Mono- Carbide . J...content - typically I PPM or less. c) The crystals grown exhibited a high level of carbon contamination (2-30 PPM ) which we believe, is caused by the...grown from melts confined in the cold crucible exhibit an unusually low oxygen content - typically 1 PPM or less. c.) The crystals grown exhibited a

Weld microfissuring in Inconel 718 minimized by minor elements

NASA Technical Reports Server (NTRS)

Morrison, T. J.; Shira, C. S.; Weisenberg, L. A.

1968-01-01

Manganese, silicon, and magnesium markedly reduce the tendency of Inconel 718 to weld microfissuring. By combining a manganese, 0.20 percent by content, with silicon, greater than 0.25 percent content, or by adding 20 ppm of magnesium, the weld microfissuring decreased in the standard alloy.

Silicon and Manganese Partition Between Slag and Metal Phases and Their Activities Pertinent to Ferromanganese and Silicomanganese Production

NASA Astrophysics Data System (ADS)

Cengizler, Hakan; Eric, R. Hurman

Equilibrium between MnO-CaO-MgO-SiO2-Al2O3 slags and carbon saturated Mn-Si-Fe-C alloys was investigated under CO at 1500oC. Manganese and silicon activities were obtained by using the present data and the previously determined MnO and SiO2 activities of the slag. Quadratic multi-coefficient regression equations were developed for activity coefficients of manganese and silicon. The conclusions of this work are:(i)increase in the basicity and the CaO/Al2O3 ratios decreases the Mn distribution ratio,(ii)increase in the silica concentration and the MgO/CaO ratio increases the Mn distribution ratio, iii)carbon and manganese as well as carbon and silicon of the metal phase are inversely proportional,(iv)as Mn/Fe and Mn/Si ratio increases in the metal the carbon solubility increases,(v)decrease in the basicity increases the silicon content of the metal and (vi)increase in the silica content of the slag increases the silicon content of the metal and this effect is more pronounced at the higher Mn/Fe and Mn/Si ratios.

Total Nasal Reconstruction for Extruded, Pending Extrusion and Severely Displaced Silicone Nasal Implants in Asian Patients.

PubMed

Hodgkinson, Darryl J

2017-04-01

The Australian population is 10% of Asian origin, and many of our Asian patients have had nasal augmentation using prosthetic material prior to immigration or as medical tourists back in their country of origin. Insertion of nasal prostheses is the most common way to augment the nasal dorsum in the Asian patient and although there is a trend towards autogenous primary augmentation still, the vast majority of patients seen in clinical practice have had augmentation by the insertion of foreign material generally silicone. Level of Evidence IV This journal requires that authors assign a level of evidence to each article. For a full description of these evidence-based medicine ratings, please refer to the Table of Contents or the online Instructions to Authors www.springer.com/00266 .

Effect of Silicon in U-10Mo Alloy

DOE Office of Scientific and Technical Information (OSTI.GOV)

Kautz, Elizabeth J.; Devaraj, Arun; Kovarik, Libor

2017-08-31

This document details a method for evaluating the effect of silicon impurity content on U-10Mo alloys. Silicon concentration in U-10Mo alloys has been shown to impact the following: volume fraction of precipitate phases, effective density of the final alloy, and 235-U enrichment in the gamma-UMo matrix. This report presents a model for calculating these quantities as a function of Silicon concentration, which along with fuel foil characterization data, will serve as a reference for quality control of the U-10Mo final alloy Si content. Additionally, detailed characterization using scanning electron microscope imaging, transmission electron microscope diffraction, and atom probe tomography showedmore » that Silicon impurities present in U-10Mo alloys form a Si-rich precipitate phase.« less

Silicon nitride films fabricated by a plasma-enhanced chemical vapor deposition method for coatings of the laser interferometer gravitational wave detector

NASA Astrophysics Data System (ADS)

Pan, Huang-Wei; Kuo, Ling-Chi; Huang, Shu-Yu; Wu, Meng-Yun; Juang, Yu-Hang; Lee, Chia-Wei; Chen, Hsin-Chieh; Wen, Ting Ting; Chao, Shiuh

2018-01-01

Silicon is a potential substrate material for the large-areal-size mirrors of the next-generation laser interferometer gravitational wave detector operated in cryogenics. Silicon nitride thin films uniformly deposited by a chemical vapor deposition method on large-size silicon wafers is a common practice in the silicon integrated circuit industry. We used plasma-enhanced chemical vapor deposition to deposit silicon nitride films on silicon and studied the physical properties of the films that are pertinent to application of mirror coatings for laser interferometer gravitational wave detectors. We measured and analyzed the structure, optical properties, stress, Young's modulus, and mechanical loss of the films, at both room and cryogenic temperatures. Optical extinction coefficients of the films were in the 10-5 range at 1550-nm wavelength. Room-temperature mechanical loss of the films varied in the range from low 10-4 to low 10-5 within the frequency range of interest. The existence of a cryogenic mechanical loss peak depended on the composition of the films. We measured the bond concentrations of N - H , Si - H , Si - N , and Si - Si bonds in the films and analyzed the correlations between bond concentrations and cryogenic mechanical losses. We proposed three possible two-level systems associated with the N - H , Si - H , and Si - N bonds in the film. We inferred that the dominant source of the cryogenic mechanical loss for the silicon nitride films is the two-level system of exchanging position between a H+ and electron lone pair associated with the N - H bond. Under our deposition conditions, superior properties in terms of high refractive index with a large adjustable range, low optical absorption, and low mechanical loss were achieved for films with lower nitrogen content and lower N - H bond concentration. Possible pairing of the silicon nitride films with other materials in the quarter-wave stack is discussed.

Carbon, oxygen and their interaction with intrinsic point defects in solar silicon ribbon material: A speculative approach

NASA Technical Reports Server (NTRS)

Goesele, U.; Ast, D. G.

1983-01-01

Some background information on intrinsic point defects is provided and on carbon and oxygen in silicon in so far as it may be relevant for the efficiency of solar cells fabricated from EFG ribbon material. The co-precipitation of carbon and oxygen and especially of carbon and silicon self interstitials are discussed. A simple model for the electrical activity of carbon-self-interstitial agglomerates is presented. The self-interstitial content of these agglomerates is assumed to determine their electrical activity and that both compressive stresses (high self-interstitial content) and tensile stresses (low self-interstitial content) give rise to electrical activity of the agglomerates. The self-interstitial content of these carbon-related agglomerates may be reduced by an appropriate high temperature treatment and enhanced by a supersaturation of self-interstitials generated during formation of the p-n junction of solar cells. Oxygen present in supersaturation in carbon-rich silicon may be induced to form SiO, precipitates by self-interstitials generated during phosphorus diffusion. It is proposed that the SiO2-Si interface of the precipates gives rise to a continuum of donor stables and that these interface states are responsible for at least part of the light inhancement effects observed in oxygen containing EFG silicon after phosphorus diffusion.

Selective formation of porous silicon

NASA Technical Reports Server (NTRS)

Fathauer, Jones (Inventor)

1993-01-01

A pattern of porous silicon is produced in the surface of a silicon substrate by forming a pattern of crystal defects in said surface, preferably by applying an ion milling beam through openings in a photoresist layer to the surface, and then exposing said surface to a stain etchant, such as HF:HNO3:H20. The defected crystal will preferentially etch to form a pattern of porous silicon. When the amorphous content of the porous silicon exceeds 70 percent, the porous silicon pattern emits visible light at room temperature.

Uptake and toxicity of arsenic, copper, and silicon in Azolla caroliniana and Lemna minor.

PubMed

Rofkar, Jordan R; Dwyer, Daryl F; Bobak, Deanna M

2014-01-01

Here we report on the analysis of two aquatic plant species, Azolla caroliniana and Lemna minor, with respect to tolerance and uptake of co-occurring arsenic, copper, and silicon for use in engineered wetlands. Plants were cultured in nutrient solution that was amended with arsenic (0 or 20 microM), copper (2 or 78 microM), and silicon (0 or 1.8 mM) either singly or in combination. We hypothesized that arsenic and copper would negatively affect the uptake of metals, growth, and pigmentation and that silicon would mitigate those stresses. Tolerance was assessed by measuring growth of biomass and concentrations of chlorophyll and anthocyanins. Both plant species accumulated arsenic, copper, and silicon; L. minor generally had higher levels on a per biomass basis. Arsenic negatively impacted A. caroliniana, causing a 30% decrease in biomass production and an increase in the concentration of anthocyanin. Copper negatively impacted L. minor, causing a 60% decrease in biomass production and a 45% decrease in chlorophyll content. Silicon augmented the impact of arsenic on biomass production in A. caroliniana but mitigated the effect of copper on L. minor. Our results suggest that mixtures of plant species may be needed to maximize uptake of multiple contaminants in engineered wetlands.

Si-doping bone composite based on protein template-mediated assembly for enhancing bone regeneration

NASA Astrophysics Data System (ADS)

Yang, Qin; Du, Yingying; Wang, Yifan; Wang, Zhiying; Ma, Jun; Wang, Jianglin; Zhang, Shengmin

2017-06-01

Bio-inspired hybrid materials that contain organic and inorganic networks interpenetration at the molecular level have been a particular focus of interest on designing novel nanoscale composites. Here we firstly synthesized a series of hybrid bone composites, silicon-hydroxyapatites/silk fibroin/collagen, based on a specific molecular assembled strategy. Results of material characterization confirmed that silicate had been successfully doped into nano-hydroxyapatite lattice. In vitro evaluation at the cellular level clearly showed that these Si-doped composites were capable of promoting the adhesion and proliferation of rat mesenchymal stem cells (rMSCs), extremely enhancing osteoblastic differentiation of rMSCs compared with silicon-free composite. More interestingly, we found there was a critical point of silicon content in the composition on regulating multiple cell behaviors. In vivo animal evaluation further demonstrated that Si-doped composites enabled to significantly improve the repair of cranial bone defect. Consequently, our current work not only suggests fabricating a potential bone repair materials by integrating element-doping and molecular assembled strategy in one system, but also paves a new way for constructing multi-functional composite materials in the future.

Method development and validation for simultaneous determination of IEA-R1 reactor’s pool water uranium and silicon content by ICP OES

NASA Astrophysics Data System (ADS)

Ulrich, J. C.; Guilhen, S. N.; Cotrim, M. E. B.; Pires, M. A. F.

2018-03-01

IPEN’s research reactor, IEA-R1, an open pool type research reactor moderated and cooled by light water. High quality water is a key factor in preventing the corrosion of the spent fuel stored in the pool. Leaching of radionuclides from the corroded fuel cladding may be prevented by an efficient water treatment and purification system. However, as a safety management policy, IPEN has adopted a water chemistry control which periodically monitors the levels of uranium (U) and silicon (Si) in the pool’s reactor, since IEA-R1 employs U3Si2-Al dispersion fuel. An analytical method was developed and validated for the determination of uranium and silicon by ICP OES. This work describes the validation process, in a context of quality assurance, including the parameters selectivity, linearity, quantification limit, precision and recovery.

Negative differential conductance in doped-silicon nanoscale devices with superconducting electrodes

NASA Astrophysics Data System (ADS)

Shapovalov, A.; Shaternik, V.; Suvorov, O.; Zhitlukhina, E.; Belogolovskii, M.

2018-02-01

We present a proof-of-concept nanoelectronics device with a negative differential conductance, an attractive from the applied viewpoint functionality. The device, characterized by the decreasing current with increasing voltage in a certain voltage region above a threshold bias of about several hundred millivolts, consists of two superconducting electrodes with an amorphous 10-nm-thick silicon interlayer doped by tungsten nano-inclusions. We show that small changes in the W content radically modify the shape of the trilayer current-voltage dependence and identify sudden conductance switching at a threshold voltage as an effect of Andreev fluctuators. The latter entities are two-level systems at the superconductor-doped silicon interface where a Cooper pair tunnels from a superconductor and occupies a pair of localized electronic states. We argue that in contrast to previously proposed devices, our samples permit very large-scale integration and are practically feasible.

A scalable silicon photonic chip-scale optical switch for high performance computing systems.

PubMed

Yu, Runxiang; Cheung, Stanley; Li, Yuliang; Okamoto, Katsunari; Proietti, Roberto; Yin, Yawei; Yoo, S J B

2013-12-30

This paper discusses the architecture and provides performance studies of a silicon photonic chip-scale optical switch for scalable interconnect network in high performance computing systems. The proposed switch exploits optical wavelength parallelism and wavelength routing characteristics of an Arrayed Waveguide Grating Router (AWGR) to allow contention resolution in the wavelength domain. Simulation results from a cycle-accurate network simulator indicate that, even with only two transmitter/receiver pairs per node, the switch exhibits lower end-to-end latency and higher throughput at high (>90%) input loads compared with electronic switches. On the device integration level, we propose to integrate all the components (ring modulators, photodetectors and AWGR) on a CMOS-compatible silicon photonic platform to ensure a compact, energy efficient and cost-effective device. We successfully demonstrate proof-of-concept routing functions on an 8 × 8 prototype fabricated using foundry services provided by OpSIS-IME.

Composition and Properties of Deposits Formed on the Internal Surface of Oil Pipelines

NASA Astrophysics Data System (ADS)

Gulieva, N. K.; Mustafaev, I. I.; Sabzaliev, A. A.; Garibov, R. G.

2018-03-01

The composition and physicochemical properties of oil deposits formed in pipelines during the transport of oil from Azerbaijani fields were studied by atomic absorption, chromatography-mass spectrometry, gamma spectrometry, and scanning electron microscopy methods. Up to 20% of the deposits were shown to be composed of paraffins, tars, and other heavy oil fractions, while asphaltenes and mechanical impurities (iron, sulfur, manganese, calcium, and silicon compounds) comprise about 80%. The contents of polycyclic aromatic hydrocarbons and radionuclides are within permissible levels, while the content of some heavy metals exceeds the permissible level by a factor of 1000. These data should be used in the management of waste products in petroleum pipelines.

Dynamic analysis of temporal moisture profiles in heatset printing studied with near-infrared spectroscopy

NASA Astrophysics Data System (ADS)

Tåg, C.-M.; Toiviainen, M.; Juuti, M.; Gane, P. A. C.

2010-10-01

Dynamic analysis of the water transfer onto coated paper, and its permeation and absorption into the porous structure were studied online in a full-scale heatset web offset printing environment. The moisture content of the paper was investigated at five different positions during the printing process. Changes in the moisture content of the paper were studied as a function of the web temperature, printing speed and silicone application in the folding unit positioned after the hot air drying oven. Additionally, the influence of fountain solution composition on the pick-up by the paper was investigated. The water content of the fountain solution transferred to the paper from the printing units was observed as changes in near-infrared absorbance. A calibration data set enabled the subsequent quantification of the dynamic moisture content of the paper at the studied locations. An increase in the printing speed reduced the water transfer to the paper and an increase in web temperature resulted in a reduction in the moisture content. An increase in the dosage level of the water-silicone mixture was observed as a re-moistening effect of the paper. Differences in the drying strategy resulted in different moisture profiles depending on the type of fountain solution used. As a conclusion, the near-infrared signal provides an effective way to characterize the moisture dynamics online at different press units.

An in-vitro evaluation of silicone elastomer latex for topical drug delivery.

PubMed

Li, L C; Vu, N T

1995-06-01

A silicone elastomer latex was evaluated as a topical drug-delivery system. With the addition of a fumed silica and the removal of water, the latex produced elastomeric solid films. The water vapour permeability of the solid film was found to be a function of the film composition. An increase in silica content and the incorporation of a water-soluble component, PEG 3350, rendered the silicone elastomer-free film even more permeable to water vapour. The release of hydrocortisone from the elastomer film can be described by a matrix-diffusion-controlled mechanism. Drug diffusion is thought to occur through the hydrophobic silicone polymer network and the hydrated hydrophilic silica region in the film matrix. Silicone elastomer film with a higher silica content exhibited a faster drug-release rate. The addition of PEG 3350 to the film further enhanced the drug-release rate.

Selective formation of porous silicon

NASA Technical Reports Server (NTRS)

Fathauer, Robert W. (Inventor); Jones, Eric W. (Inventor)

1993-01-01

A pattern of porous silicon is produced in the surface of a silicon substrate by forming a pattern of crystal defects in said surface, preferably by applying an ion milling beam through openings in a photoresist layer to the surface, and then exposing said surface to a stain etchant, such as HF:HNO3:H2O. The defected crystal will preferentially etch to form a pattern of porous silicon. When the amorphous content of the porous silicon exceeds 70 percent, the porous silicon pattern emits visible light at room temperature.

Cast Aluminum Alloy for High Temperature Applications

NASA Technical Reports Server (NTRS)

Lee, Jonathan A.

2003-01-01

Originally developed by NASA as high performance piston alloys to meet U.S. automotive legislation requiring low exhaust emission, the novel NASA alloys now offer dramatic increase in tensile strength for many other applications at elevated temperatures from 450 F (232 C) to about 750 F (400 C). It is an ideal low cost material for cast automotive components such as pistons, cylinder heads, cylinder liners, connecting rods, turbo chargers, impellers, actuators, brake calipers and rotors. It can be very economically produced from conventional permanent mold, sand casting or investment casting, with silicon content ranging from 6% to 18%. At high silicon levels, the alloy exhibits excellent dimensional stability, surface hardness and wear resistant properties.

High Strength and Wear Resistant Aluminum Alloy for High Temperature Applications

NASA Technical Reports Server (NTRS)

Lee, Jonathan A.; Chen, Po Shou

2003-01-01

Originally developed by NASA as high performance piston alloys to meet U.S. automotive legislation requiring low exhaust emission, the novel NASA alloys now offer dramatic increase in tensile strength for many other applications at elevated temperatures from 450 F (232 C) to about 750 F (400 C). It is an ideal low cost material for cast automotive components such as pistons, cylinder heads, cylinder liners, connecting rods, turbo chargers, impellers, actuators, brake calipers and rotors. It can be very economically produced from conventional permanent mold, sand casting or investment casting, with silicon content ranging from 6% to 18%. At high silicon levels, the alloy exhibits excellent thermal growth stability, surface hardness and wear resistant properties.

The defensive role of silicon in wheat against stress conditions induced by drought, salinity or cadmium.

PubMed

Alzahrani, Yahya; Kuşvuran, Alpaslan; Alharby, Hesham F; Kuşvuran, Sebnem; Rady, Mostafa M

2018-06-15

In the crust of earth, silicon (Si) is one of the two major elements. For plant growth and development, importance of Si remains controversial due to the widely differences in ability of plants to take up this element. In this paper, pot experiments were done to study Si roles in improving salt, drought or cadmium (Cd) stress tolerance in wheat. Up to full emergence, all pots were watered at 100% field capacity (FC) every other day with nutrient solution without any treatments. Fifteen days after sowing, pots were divided into four plots, each with 40 pots for no stress (control) and three stress treatments; drought (50% FC), salinity (200 mM NaCl) and cadmium (2 mM Cd). For all plots, Si was applied at four levels (0, 2, 4 and 6 mM). Under no stress condition, Si applications increased Si content and improved growth as a result of reduced electrolyte leakage (EL), malondialdehyde (MDA) and Na + contents. Under stress conditions, Si supplementation conferred higher growth, gas exchange, tissue water and membranes stabilities, and K + content, and had limited MDA and Na + contents and EL compared to those obtained without Si. Compared to those without Si, enzyme (e.g., superoxide dismutase, catalase and peroxidase) activity was improved by Si applications, which were linked with elevated antioxidants and osmoprotectants (e.g., free proline, soluble sugars, ascorbic acid and glutathione) contents, might providing antioxidant defense against abiotic stress in wheat. The level of 4 mM Si was most effective for mitigating the salt and drought stress conditions, while 6 mM Si level was most influentially for alleviating the Cd stress condition. These results suggest that Si is beneficial in remarkably affecting physiological phenomena and improving wheat growth under abiotic stress. Copyright © 2018 Elsevier Inc. All rights reserved.

Characterization of Ceramic Vane Materials for 10KW Turboalternator.

DTIC Science & Technology

1983-04-01

eide if necessary end identify by block number) Silicon nitride Gas turbine engine Failure analysis Silicon carbide Mechanical properties Ceramics...silicon carbide, and sil- iconized silicon carbide, being considered for use in a small turbine engine . Chemistry, phase content, and room-temperature...sponsored by USAMERADCOK, Ft. Belvoir, Va., and the engine testing and development was done by Solar Turbines International, San Diego, Calif. ANMHRC

Effect of attrition milling on the reaction sintering of silicon nitride

NASA Technical Reports Server (NTRS)

Herbell, T. P.; Glasgow, T. K.; Yeh, H. C.

1978-01-01

Silicon powder was ground in a steel attrition mill under nitrogen. Air exposed powder was compacted, prefired in helium, and reaction sintered in nitrogen-4 v/o hydrogen. For longer grinding times, oxygen content, surface area and compactability of the powder increased; and both alpha/beta ratio and degreee of nitridation during sintering increased. Iron content remained constant.

Effect of attrition milling on the reaction sintering of silicon nitride

NASA Technical Reports Server (NTRS)

Herbell, T. P.; Glasgow, T. K.; Yeh, H. C.

1978-01-01

Silicon powder was ground in a steel attrition mill under nitrogen. Air-exposed powder was compacted, prefired in helium, and reaction-sintered in nitrogen-4 v/o hydrogen. For longer grinding times, oxygen content, surface area and compactability of the powder increased; and both alpha/beta ratio and degree of nitridation during sintering increased. Iron content remained constant.

Exceptional gettering response of epitaxially grown kerfless silicon

DOE PAGES

Powell, D. M.; Markevich, V. P.; Hofstetter, J.; ...

2016-02-08

The bulk minority-carrier lifetime in p- and n-type kerfless epitaxial (epi) crystalline silicon wafers is shown to increase >500 during phosphorus gettering. We employ kinetic defect simulations and microstructural characterization techniques to elucidate the root cause of this exceptional gettering response. Simulations and deep-level transient spectroscopy (DLTS) indicate that a high concentra- tion of point defects (likely Pt) is “locked in” during fast (60 C/min) cooling during epi wafer growth. The fine dispersion of moderately fast-diffusing recombination-active point defects limits as-grown lifetime but can also be removed during gettering, confirmed by DLTS measurements. Synchrotron-based X-ray fluorescence microscopy indicates metal agglomeratesmore » at structural defects, yet the structural defect density is sufficiently low to enable high lifetimes. Consequently, after phosphorus diffusion gettering, epi silicon exhibits a higher lifetime than materials with similar bulk impurity contents but higher densities of structural defects, including multicrystalline ingot and ribbon silicon materials. As a result, device simulations suggest a solar-cell efficiency potential of this material >23%.« less

Just-in-Time Correntropy Soft Sensor with Noisy Data for Industrial Silicon Content Prediction.

PubMed

Chen, Kun; Liang, Yu; Gao, Zengliang; Liu, Yi

2017-08-08

Development of accurate data-driven quality prediction models for industrial blast furnaces encounters several challenges mainly because the collected data are nonlinear, non-Gaussian, and uneven distributed. A just-in-time correntropy-based local soft sensing approach is presented to predict the silicon content in this work. Without cumbersome efforts for outlier detection, a correntropy support vector regression (CSVR) modeling framework is proposed to deal with the soft sensor development and outlier detection simultaneously. Moreover, with a continuous updating database and a clustering strategy, a just-in-time CSVR (JCSVR) method is developed. Consequently, more accurate prediction and efficient implementations of JCSVR can be achieved. Better prediction performance of JCSVR is validated on the online silicon content prediction, compared with traditional soft sensors.

Just-in-Time Correntropy Soft Sensor with Noisy Data for Industrial Silicon Content Prediction

PubMed Central

Chen, Kun; Liang, Yu; Gao, Zengliang; Liu, Yi

2017-01-01

Development of accurate data-driven quality prediction models for industrial blast furnaces encounters several challenges mainly because the collected data are nonlinear, non-Gaussian, and uneven distributed. A just-in-time correntropy-based local soft sensing approach is presented to predict the silicon content in this work. Without cumbersome efforts for outlier detection, a correntropy support vector regression (CSVR) modeling framework is proposed to deal with the soft sensor development and outlier detection simultaneously. Moreover, with a continuous updating database and a clustering strategy, a just-in-time CSVR (JCSVR) method is developed. Consequently, more accurate prediction and efficient implementations of JCSVR can be achieved. Better prediction performance of JCSVR is validated on the online silicon content prediction, compared with traditional soft sensors. PMID:28786957

Powder containing 2H-type silicon carbide produced by reacting silicon dioxide and carbon powder in nitrogen atmosphere in the presence of aluminum

NASA Technical Reports Server (NTRS)

Kuramoto, N.; Takiguchi, H.

1984-01-01

The production of powder which contains silicon carbide consisting of 40% of 2H-type silicon carbide, beta type silicon carbide and less than 3% of nitrogen is discussed. The reaction temperature to produce the powder containing 40% of 2H-type silicon carbide is set at above 1550 degrees C in an atmosphere of aluminum or aluminum compounds and nitrogen gas or an antioxidation atmosphere containing nitrogen gas. The mixture ratio of silicon dioxide and carbon powder is 0.55 - 1:2.0 and the contents of aluminum or aluminum compounds within silicon dioxide is less than 3% in weight.

Hydrogenated amorphous silicon coatings may modulate gingival cell response

NASA Astrophysics Data System (ADS)

Mussano, F.; Genova, T.; Laurenti, M.; Munaron, L.; Pirri, C. F.; Rivolo, P.; Carossa, S.; Mandracci, P.

2018-04-01

Silicon-based materials present a high potential for dental implant applications, since silicon has been proven necessary for the correct bone formation in animals and humans. Notably, the addition of silicon is effective to enhance the bioactivity of hydroxyapatite and other biomaterials. The present work aims to expand the knowledge of the role exerted by hydrogen in the biological interaction of silicon-based materials, comparing two hydrogenated amorphous silicon coatings, with different hydrogen content, as means to enhance soft tissue cell adhesion. To accomplish this task, the films were produced by plasma enhanced chemical vapor deposition (PECVD) on titanium substrates and their surface composition and hydrogen content were analyzed by means of X-ray photoelectron spectroscopy (XPS) and Fourier-transform infrared spectrophotometry (FTIR) respectively. The surface energy and roughness were measured through optical contact angle analysis (OCA) and high-resolution mechanical profilometry respectively. Coated surfaces showed a slightly lower roughness, compared to bare titanium samples, regardless of the hydrogen content. The early cell responses of human keratinocytes and fibroblasts were tested on the above mentioned surface modifications, in terms of cell adhesion, viability and morphometrical assessment. Films with lower hydrogen content were endowed with a surface energy comparable to the titanium surfaces. Films with higher hydrogen incorporation displayed a lower surface oxidation and a considerably lower surface energy, compared to the less hydrogenated samples. As regards mean cell area and focal adhesion density, both a-Si coatings influenced fibroblasts, but had no significant effects on keratinocytes. On the contrary, hydrogen-rich films increased manifolds the adhesion and viability of keratinocytes, but not of fibroblasts, suggesting a selective biological effect on these cells.

PLA and single component silicone rubber blends for sub-zero temperature blown film packaging applications

NASA Astrophysics Data System (ADS)

Meekum, Utai; Khiansanoi, Apichart

2018-06-01

The poly(lactic acid) (PLA) blend with single component silicone rubber in the presence of reactive amino silane coupling agent and polyester polyols plasticizer were studied. The manufacturing of film packaging for sub-zero temperature applications from the PLA blend was the main objective. The mechanical properties, especially the impact strengths, of PLA/silicone blends were significantly depended on the silicone loading. The outstanding impact strengths, tested at sub-zero temperature, of the blend having silicone content of 8.0 phr was achieved. It was chosen as the best candidate for the processability improvement. Adding the talc filler into the PLA/silicone blend to enhance the rheological properties was investigated. The ductility of the talc filled blends were decreased with increasing the filler contents. However, the shear viscosity of the blend was raised with talc loading. The blend loaded with 40 phr of talc filler was justified as the optimal formula for the blown film process testing and it was successfully performed with a few difficulties. The obtained blown film showed relative good flexibility in comparison with LDPE but it has low transparency.

Silicon nanoparticles more effectively alleviated UV-B stress than silicon in wheat (Triticum aestivum) seedlings.

PubMed

Tripathi, Durgesh Kumar; Singh, Swati; Singh, Vijay Pratap; Prasad, Sheo Mohan; Dubey, Nawal Kishore; Chauhan, Devendra Kumar

2017-01-01

The role of silicon (Si) in alleviating biotic as well as abiotic stresses is well known. However, the potential of silicon nanoparticle (SiNP) in regulating abiotic stress and associated mechanisms have not yet been explored. Therefore, in the present study hydroponic experiments were conducted to investigate whether Si or SiNp are more effective in the regulation of UV-B stress. UV-B (ambient and enhanced) radiation caused adverse effect on growth of wheat (Triticum aestivum) seedlings, which was accompanied by declined photosynthetic performance and altered vital leaf structures. Levels of superoxide radical and H 2 O 2 were enhanced by UV-B as also evident from their histochemical stainings, which was accompanied by increased lipid peroxidation (LPO) and electrolyte leakage. Activities of superoxide dismutase and ascorbate peroxidase were inhibited by UV-B while catalase and guaiacol peroxidase, and all non-enzymatic antioxidants were stimulated by UV-B. Although, nitric oxide (NO) content was increased at all tested combinations, but its maximum content was observed under SiNps together with UV-B enhanced treatment. Pre-additions of SiNp as well as Si protected wheat seedlings against UV-B by regulating oxidative stress through enhanced antioxidants. Data indicate that SiNp might have protected wheat seedlings through NO-mediated triggering of antioxidant defense system, which subsequently counterbalance reactive oxygen species-induced damage to photosynthesis. Further, SiNp appear to be more effective in reducing UV-B stress than Si, which is related to its greater availability to wheat seedlings. Copyright © 2016 Elsevier Masson SAS. All rights reserved.

Development of a 3D printable maxillofacial silicone: Part I. Optimization of polydimethylsiloxane chains and cross-linker concentration.

PubMed

Jindal, Swati K; Sherriff, Martyn; Waters, Mark G; Coward, Trevor J

2016-10-01

Conventionally, maxillofacial prostheses are fabricated by hand carving the missing anatomic defect in wax and creating a mold into which pigmented silicone elastomer is placed. Digital technologies such as computer numerical control (CNC) milling and 3-dimensional (3D) printing have been used to prepare molds directly or indirectly into which a biocompatible pigmented silicone elastomer is placed. The purpose of this in vitro study was to develop a silicone elastomer by varying composition that could eventually be 3D printed directly without a mold to create facial/body prostheses. The silicone was composed of polydimethylsiloxane (PDMS), filler, catalyst, and cross-linker. Four types of base silicone polymers were prepared with different PDMS molecular weight combinations with long, medium, and short chain length PDMS. The effect of the cross-linker (2.5% to 12.5%) content in these bases was assessed for the effect upon the mechanical properties of the elastomer. Ten readings were made for each formulation, and differences in the means were evaluated with a 2-way ANOVA (α=.05). Variations in silicone composition resulted in hardness from 6.8 to 28.5 durometer, tensile strength from 0.720 to 3.524 kNm -1 and tear strength from 0.954 to 8.484 MPa. Significant differences were observed among all formulations (P<.05). These formulations have mechanical properties comparable with the commercial silicones currently used for the fabrication of facial prostheses. The formulation with 5% cross-linker content and high content of long-chain PDMS chains with optimum mechanical properties was chosen for further development. The optimum combination of mechanical properties implies the use of one of these formulations for further evaluation in a 3D printer capable of actively mixing and extruding 2-component, room temperature vulcanization silicone. Copyright © 2016 Editorial Council for the Journal of Prosthetic Dentistry. Published by Elsevier Inc. All rights reserved.

Effect of High Si Content on U3Si2 Fuel Microstructure

NASA Astrophysics Data System (ADS)

Rosales, Jhonathan; van Rooyen, Isabella J.; Meher, Subhashish; Hoggan, Rita; Parga, Clemente; Harp, Jason

2018-02-01

The development of U3Si2 as an accident-tolerant nuclear fuel has gained research interest because of its promising high uranium density and improved thermal properties. In the present study, three samples of U3Si2 fuel with varying silicon content have been fabricated by a conventional powder metallurgical route. Microstructural characterization via scanning and transmission electron microscopy reveals the presence of other stoichiometry of uranium silicide such as USi and UO2 in both samples. The detailed phase analysis by x-ray diffraction shows the presence of secondary phases, such as USi, U3Si, and UO2. The samples with higher concentrations of silicon content of 7.5 wt.% display additional elemental Si. These samples also possess an increased amount of the USi phase as compared to that in the conventional sample with 7.3 wt.% silicon. The optimization of U3Si2 fuel performance through the understanding of the role of Si content on its microstructure has been discussed.

Silicon carbidonitride based phosphors and lighting devices using the same

DOEpatents

Li, Yuanqiang; Romanelli, Michael Dennis; Tian, Yongchi

2013-09-17

Disclosed herein are novel families of silicon carbidonitride phosphor compositions. In certain embodiments, optimal ranges of carbon content have been identified which provide excellent luminescence and thermal stability characteristics.

Influence of calcium and silicon supplementation into Pleurotus ostreatus substrates on quality of fresh and canned mushrooms.

PubMed

Thongsook, T; Kongbangkerd, T

2011-08-01

Supplements of gypsum (calcium source), pumice (silicon source) and pumice sulfate (silicon and calcium source) into substrates for oyster mushrooms (Pleurotus ostreatus) were searched for their effects on production as well as qualities of fresh and canned mushrooms. The addition of pumice up to 30% had no effect on total yield, size distribution and cap diameters. The supplementation of gypsum at 10% decreased the total yield; and although gypsum at 5% did not affect total yield, the treatment increased the proportion of large-sized caps. High content (>10%) of pumice sulfate resulted in the lower yield. Calcium and silicon contents in the fruit bodies were not influenced by supplementations. The centrifugal drip loss values and solid content of fresh mushrooms, and the percentage of weight gained and firmness of canned mushrooms, cultivated in substrates supplemented with gypsum, pumice and pumice sulfate were significantly (p≤0.05) higher than those of the control. Scanning electron micrographs revealed the more compacted hyphae of mushroom stalks supplemented with silicon and/or calcium after heat treatment, compared to the control. Supplementation of P. ostreatus substrates with 20% pumice was the most practical treatment because it showed no effect on yield and the most cost-effective.

Plant Growth Promoting Rhizobacteria and Silicon Synergistically Enhance Salinity Tolerance of Mung Bean

PubMed Central

Mahmood, Sajid; Daur, Ihsanullah; Al-Solaimani, Samir G.; Ahmad, Shakeel; Madkour, Mohamed H.; Yasir, Muhammad; Hirt, Heribert; Ali, Shawkat; Ali, Zahir

2016-01-01

The present study explored the eco-friendly approach of utilizing plant-growth-promoting rhizobacteria (PGPR) inoculation and foliar application of silicon (Si) to improve the physiology, growth, and yield of mung bean under saline conditions. We isolated 18 promising PGPR from natural saline soil in Saudi Arabia, and screened them for plant-growth-promoting activities. Two effective strains were selected from the screening trial, and were identified as Enterobacter cloacae and Bacillus drentensis using matrix-assisted laser desorption ionization-time-of-flight mass spectrometry and 16S rRNA gene sequencing techniques, respectively. Subsequently, in a 2-year mung bean field trial, using a randomized complete block design with a split-split plot arrangement, we evaluated the two PGPR strains and two Si levels (1 and 2 kg ha−1), in comparison with control treatments, under three different saline irrigation conditions (3.12, 5.46, and 7.81 dS m−1). The results indicated that salt stress substantially reduced stomatal conductance, transpiration rate, relative water content (RWC), total chlorophyll content, chlorophyll a, chlorophyll b, carotenoid content, plant height, leaf area, dry biomass, seed yield, and salt tolerance index. The PGPR strains and Si levels independently improved all the aforementioned parameters. Furthermore, the combined application of the B. drentensis strain with 2 kg Si ha−1 resulted in the greatest enhancement of mung bean physiology, growth, and yield. Overall, the results of this study provide important information for the benefit of the agricultural industry. PMID:27379151

Develop Silicone Encapsulation Systems for Terrestrial Silicon Solar Arrays

NASA Technical Reports Server (NTRS)

1979-01-01

The results for Task 3 of the Low Cost Solar Array Project are presented. Task 3 is directed toward the development of a cost effective encapsulating system for photovoltaic modules using silicon based materials. The technical approach of the contract effort is divided into four special tasks: (1) technology review; (2) generation of concepts for screening and processing silicon encapsulation systems; (3) assessment of encapsulation concepts; and (4) evaluation of encapsulation concepts. The candidate silicon materials are reviewed. The silicon and modified silicon resins were chosen on the basis of similarity to materials with known weatherability, cost, initial tangential modulus, accelerated dirt pick-up test results and the ratio of the content of organic phenyl substitution of methyl substitution on the backbone of the silicon resin.

A silicone rubber based composites using n-octadecane/poly (styrene-methyl methacrylate) microcapsules as energy storage particle

NASA Astrophysics Data System (ADS)

Wu, W. L.; Chen, Z.

A phase-change energy-storage material, silicone rubber (SR) coated n-octadecane/poly (styrene-methyl methacrylate) (SR/OD/P(St-MMA)) microcapsule composites, was prepared by mixing SR and OD/P(St-MMA) microcapsules. The microcapsule content and silicone rubber coated method were investigated. The morphology and thermal properties of the composites were characterized by scanning electron microscopy (SEM), thermogravimetric analysis (TG), differential scanning calorimetry (DSC) and heat storage properties. The results showed that the thermal and mechanical properties of SR/OD/P(St-MMA) composites were excellent when the microcapsules were coated with room temperature vulcanized silicone rubber (RTVSR), of which content was 2 phr (per hundred rubber). The enthalpy value of the composites was 67.6 J g-1 and the composites were found to have good energy storage function.

Effect of Ambient Temperature on Hydrophobic Recovery Behavior of Silicone Rubber Composites

NASA Astrophysics Data System (ADS)

Peng, Xiangyang; Li, Zijian; Zheng, Feng; Zhang, Ni; Huang, Zhen; Fang, Pengfei

A series of silicone rubber samples with different cyclosiloxanes contents have been successfully prepared, and their hydrophobic recovery behaviors and mechanism were investigated in detail. The gas chromatography-mass spectroscopy technique after Soxhlet extraction was utilized to examine the low molecular weight siloxanes in the sample, SEM was used to observe the surface morphology of the silicone rubber influenced by plasma treatment, and contact angle measurement was applied to probe the hydrophobic recovery of the sample surface after plasma treatment at different storage temperatures. The storage time-dependent contact angle of water can be well fitted by the diffusion model calculated from Fick’s second law. The results imply that the hydrophobic recovery of silicone rubber is related to the diffusion of low molecular weight siloxanes, while larger content or higher temperature can induce faster hydrophobic recovery.

Development of lithium diffused radiation resistant solar cells, part 2

NASA Technical Reports Server (NTRS)

Payne, P. R.; Somberg, H.

1971-01-01

The work performed to investigate the effect of various process parameters on the performance of lithium doped P/N solar cells is described. Effort was concentrated in four main areas: (1) the starting material, (2) the boron diffusion, (3) the lithium diffusion, and (4) the contact system. Investigation of starting material primarily involved comparison of crucible grown silicon (high oxygen content) and Lopex silicon (low oxygen content). In addition, the effect of varying growing parameters of crucible grown silicon on lithium cell output was also examined. The objective of the boron diffusion studies was to obtain a diffusion process which produced high efficiency cells with minimal silicon stressing and could be scaled up to process 100 or more cells per diffusion. Contact studies included investigating sintering of the TiAg contacts and evaluation of the contact integrity.

Modified Process For Formation Of Silicon Carbide Matrix Composites

NASA Technical Reports Server (NTRS)

Behrendt, Donald R.; Singh, Mrityunjay

1996-01-01

Modified version of process for making SiC-fiber/SiC-matrix composite material reduces damage to SiC (SCS-6) fibers and to carbon-rich coatings on fibers. Modification consists of addition of second polymer-infiltration-and-pyrolysis step to increase carbon content of porous matrix before infiltration with liquid silicon or silicon alloy.

The role of calcium, silicon and salicylic acid treatment in protection of canola plants against boron toxicity stress.

PubMed

Metwally, Ashraf M; Radi, Abeer A; El-Shazoly, Rasha M; Hamada, Afaf M

2018-01-22

Boron (B) toxicity often limits crop yield and the quality of production in agricultural areas. Here, we investigated the effects of calcium (Ca), silicon (Si) and salicylic acid (SA) on development of B toxicity, B allocation in canola (Brassica napus cultivar Sarw 4) and its role in non-enzymatic antioxidants in relation to yield of this cultivar under B toxicity. Canola seedlings were subjected to four B levels induced by boric acid in the absence or presence of Ca, Si and SA. The results showed that Ca, Si and SA addition ameliorated the inhibition in canola growth, water content (WC), and improved siliqua number, siliqua weight and seed index. The B content in shoots and roots and total B accumulation in the whole plant were increased in control plants under B-toxicity-stress, and these parameters were significantly decreased by addition of Ca, Si and SA. The shoot ascorbate pool (ascorbate, AsA, and dehydroascorbate, DHA), α-tocopherol and phenolics (free and bound) were increased under B toxicity, and were significantly decreased in most cases by addition of Ca, Si and SA, except α-tocopherol, which increased at low B levels (0, 25 and 50 mg kg soil -1 ). The glutathione content did not obviously change by B stress, while added Ca, Si and SA inhibited its accumulation under B stress. In addition, B toxicity reduced the shoot flavonoids content; however, this reduction was not alleviated by the use of Ca, Si and SA treatments. It could be concluded that growth and yield of canola plants grown under high B concentration improved after external application of Ca, Si or SA.

Tribological properties of silicon carbide in metal removal process

NASA Technical Reports Server (NTRS)

Miyoshi, K.; Buckley, D. H.

1980-01-01

Material properties are considered as they relate to adhesion, friction, and wear of single crystal silicon carbide in contact with metals and alloys that are likely to be involved in a metal removal process such as grinding. Metal removal from adhesion between sliding surfaces in contact and metal removal as a result of the silicon carbide sliding against a metal, indenting into it, and plowing a series of grooves or furrows are discussed. Fracture and deformation characteristics of the silicon carbide surface are also covered. The adhesion, friction, and metal transfer to silicon carbide is related to the relative chemical activity of the metals. The more active the metal, the higher the adhesion and friction, and the greater the metal transfer to silicon carbide. Atomic size and content of alloying elements play a dominant role in controlling adhesion, friction, and abrasive wear properties of alloys. The friction and abrasive wear (metal removal) decrease linearly as the shear strength of the bulk metal increases. They decrease as the solute to solvent atomic radius ratio increases or decreases linearly from unity, and with an increase of solute content. The surface fracture of silicon carbide is due to cleavages of 0001, 10(-1)0, and/or 11(-2)0 planes.

Preparation and properties studies of UV-curable silicone modified epoxy resin composite system.

PubMed

Yu, Zhouhui; Cui, Aiyong; Zhao, Peizhong; Wei, Huakai; Hu, Fangyou

2018-01-01

Modified epoxy suitable for ultraviolet (UV) curing is prepared by using organic silicon toughening. The curing kinetics of the composite are studied by dielectric analysis (DEA), and the two-phase compatibility of the composite is studied by scanning electron microscopy (SEM). The tensile properties, heat resistance, and humidity resistance of the cured product are explored by changing the composition ratio of the silicone and the epoxy resin. SEM of silicone/epoxy resin shows that the degree of cross-linking of the composites decreases with an increase of silicone resin content. Differential thermal analysis indicates that the glass transition temperature and the thermal stability of the composites decrease gradually with an increase of silicone resin content. The thermal degradation rate in the high temperature region, however, first decreases and then increases. In general, after adding just 10%-15% of the silicone resin and exposing to light for 15 min, the composite can still achieve a better curing effect. Under such conditions, the heat resistance of the cured product decreases a little. The tensile strength is kept constant so that elongation at breakage is apparently improved. The change rate after immersion in distilled water at 60°C for seven days is small, which shows excellent humidity resistance.

A study on the tensile properties of silicone rubber/polypropylene fibers/silica hybrid nanocomposites.

PubMed

Ziraki, Sahar; Zebarjad, Seyed Mojtaba; Hadianfard, Mohammad Jafar

2016-04-01

Metacarpophalangeal joint implants have been usually made of silicone rubber. In the current study, silica nano particles and polypropylene fibers were added to silicone rubber to improve silicone properties. The effect of the addition of silica nano particles and polypropylene fibers on the tensile behavior of the resultant composites were investigated. Composite samples with different content of PP fibers and Silica nano particles (i. e. 0, 1 and 2wt%) as well as the hybrid composite of silicone rubber with 1wt% SiO2 and 1wt% PP fiber were prepared. Tensile tests were done at constant cross head speed. To study the body fluid effect on the mechanical properties of silicone rubber composites, samples soaked in simulated body fluid (SBF) at 37°C were also tested. The morphology of the samples were studied by scanning electron microscope. Results of analysis revealed that an increase in PP fibers and silica nano particles content to 2wt%, increases the tensile strength of silicone rubber of about 75% and 42% respectively. It was found out that the strength of the samples decreases after being soaked in simulated body fluid, though composites with PP fibers as the reinforcement showed less property degradation. Copyright © 2016 Elsevier Ltd. All rights reserved.

Addressing the amorphous content issue in quantitative phase analysis: the certification of NIST standard reference material 676a.

PubMed

Cline, James P; Von Dreele, Robert B; Winburn, Ryan; Stephens, Peter W; Filliben, James J

2011-07-01

A non-diffracting surface layer exists at any boundary of a crystal and can comprise a mass fraction of several percent in a finely divided solid. This has led to the long-standing issue of amorphous content in standards for quantitative phase analysis (QPA). NIST standard reference material (SRM) 676a is a corundum (α-Al(2)O(3)) powder, certified with respect to phase purity for use as an internal standard in powder diffraction QPA. The amorphous content of SRM 676a is determined by comparing diffraction data from mixtures with samples of silicon powders that were engineered to vary their specific surface area. Under the (supported) assumption that the thickness of an amorphous surface layer on Si was invariant, this provided a method to control the crystalline/amorphous ratio of the silicon components of 50/50 weight mixtures of SRM 676a with silicon. Powder diffraction experiments utilizing neutron time-of-flight and 25 keV and 67 keV X-ray energies quantified the crystalline phase fractions from a series of specimens. Results from Rietveld analyses, which included a model for extinction effects in the silicon, of these data were extrapolated to the limit of zero amorphous content of the Si powder. The certified phase purity of SRM 676a is 99.02% ± 1.11% (95% confidence interval). This novel certification method permits quantification of amorphous content for any sample of interest, by spiking with SRM 676a.

Synthesis and characterization of SiC based composite materials for immobilizing radioactive graphite

NASA Astrophysics Data System (ADS)

Wang, Qing; Teng, Yuancheng; Wu, Lang; Zhang, Kuibao; Zhao, Xiaofeng; Hu, Zhuang

2018-06-01

In order to immobilize high-level radioactive graphite, silicon carbide based composite materials{ (1-x) SiC· x MgAl2O4 (0.1 ≤ x≤0.4) } were fabricated by solid-state reaction at 1370 °C for 2 h in vacuum. Residual graphite and precipitated corundum were observed in the as-synthesized product, which attributed to the interface reaction of element silicon and magnesium compounds. To further understand the reasons for the presence of graphite and corundum, the effects of mole ratio of Si/C, MgAl2O4 content and non-stoichiometry of MgAl2O4 on the synthesis were investigated. To immobilize graphite better, residual graphite should be eliminated. The target product was obtained when the mole ratio of Si/C was 1.3:1, MgAl2O4 content was x = 0.2, and the mole ratio of Al to Mg in non-stoichiometric MgAl2O4 was 1.7:1. In addition, the interface reaction between magnesium compounds and silicon not graphite was displayed by conducting a series of comparative experiments. The key factor for the occurrence of interface reaction is that oxygen atom is transferred from magnesium compound to SiO gas. Infrared and Raman spectrum revealed the increased disorders of graphite after being synthesized.

Preparation and characterization of the silicon clathrate NaxSi{136} (x -> 0)

NASA Astrophysics Data System (ADS)

Ammar, A.; Cros, C.; Pouchard, M.; Jaussaud, N.; Bassat, J.-M.; Villeneuve, G.; Reny, E.

2005-03-01

The type-II silicon clathrate, NaxSi{136}, having a residual sodium content as low as 37 ppm (x = 0.0062) has been prepared by thermal decomposition of NaSi under high vacuum in the temperature range 340-420 ° C followed by subsequent treatments under high vacuum, and completed by several treaments with iodine at 300-350 ° C. The final sample was characterized by XRD, chemical analysis and EPR spectroscopy. This latter technique proved to be particularly suitable to the characterization of highly diluted sodium atoms in the open host lattice of a type II clathrate of silicon and the quantitaive determination of the residual sodium content

Passivation mechanism in silicon heterojunction solar cells with intrinsic hydrogenated amorphous silicon oxide layers

NASA Astrophysics Data System (ADS)

Deligiannis, Dimitrios; van Vliet, Jeroen; Vasudevan, Ravi; van Swaaij, René A. C. M. M.; Zeman, Miro

2017-02-01

In this work, we use intrinsic hydrogenated amorphous silicon oxide layers (a-SiOx:H) with varying oxygen content (cO) but similar hydrogen content to passivate the crystalline silicon wafers. Using our deposition conditions, we obtain an effective lifetime (τeff) above 5 ms for cO ≤ 6 at. % for passivation layers with a thickness of 36 ± 2 nm. We subsequently reduce the thickness of the layers using an accurate wet etching method to ˜7 nm and deposit p- and n-type doped layers fabricating a device structure. After the deposition of the doped layers, τeff appears to be predominantly determined by the doped layers themselves and is less dependent on the cO of the a-SiOx:H layers. The results suggest that τeff is determined by the field-effect rather than by chemical passivation.

Silicon Sheet Growth Development for the Large Area Sheet Task of the Low Cost Solar Array Project. Heat Exchanger Method - Ingot Casting Fixed Abrasive Method - Multi-Wire Slicing

NASA Technical Reports Server (NTRS)

Schmid, F.; Khattak, C. P.

1978-01-01

Solar cells fabricated from HEM cast silicon yielded up to 15% conversion efficiencies. This was achieved in spite of using unpurified graphite parts in the HEM furnace and without optimization of material or cell processing parameters. Molybdenum retainers prevented SiC formation and reduced carbon content by 50%. The oxygen content of vacuum cast HEM silicon is lower than typical Czochralski grown silicon. Impregnation of 45 micrometers diamonds into 7.5 micrometers copper sheath showed distortion of the copper layer. However, 12.5 micrometers and 15 micrometers copper sheath can be impregnated with 45 micrometers diamonds to a high concentration. Electroless nickel plating of wires impregnated only in the cutting edge showed nickel concentration around the diamonds. This has the possibility of reducing kerf. The high speed slicer fabricated can achieve higher speed and longer stroke with vibration isolation.

Silicon in broiler drinking water promotes bone development in broiler chickens.

PubMed

Sgavioli, S; de Faria Domingues, C H; Castiblanco, D M C; Praes, M F F M; Andrade-Garcia, Giuliana M; Santos, E T; Baraldi-Artoni, S M; Garcia, R G; Junqueira, O M

2016-10-01

Skeletal abnormalities, bone deformities and fractures cause significant losses in broiler production during both rearing and processing. Silicon is an essential mineral for bone and connective tissue synthesis and for calcium absorption during the early stages of bone formation. Performance was not affected by the addition of silicon. However, broilers receiving silicon showed a significant increase of phosphorus, zinc, copper, manganese and ash in the tibia. In conclusion, broiler performance was not impaired by adding the tested silicon product to the drinking water. In addition, bone development improved, as demonstrated by higher mineral and ash content. Further studies are required to determine the optimal concentration of silicon, including heat stress simulations, to better understand the effects of silicon on bone development.

Formation of multiple levels of porous silicon for buried insulators and conductors in silicon device technologies

DOEpatents

Blewer, Robert S.; Gullinger, Terry R.; Kelly, Michael J.; Tsao, Sylvia S.

1991-01-01

A method of forming a multiple level porous silicon substrate for semiconductor integrated circuits including anodizing non-porous silicon layers of a multi-layer silicon substrate to form multiple levels of porous silicon. At least one porous silicon layer is then oxidized to form an insulating layer and at least one other layer of porous silicon beneath the insulating layer is metallized to form a buried conductive layer. Preferably the insulating layer and conductive layer are separated by an anodization barrier formed of non-porous silicon. By etching through the anodization barrier and subsequently forming a metallized conductive layer, a fully or partially insulated buried conductor may be fabricated under single crystal silicon.

Impact of implanted phosphorus on the diffusivity of boron and its applicability to silicon solar cells

DOE Office of Scientific and Technical Information (OSTI.GOV)

Schrof, Julian; Müller, Ralph; Reedy, Robert C.

2015-07-28

Boron diffusivity reduction in extrinsically doped silicon was investigated in the context of a process combination consisting of BBr3 furnace diffusion and preceding Phosphorus ion implantation. The implantation of Phosphorus leads to a substantial blocking of Boron during the subsequent Boron diffusion. First, the influences of ion implantation induced point defects as well as the initial P doping on B diffusivity were studied independently. Here, it was found that not the defects created during ion implantation but the P doping itself results in the observed B diffusion retardation. The influence of the initial P concentration was investigated in more detailmore » by varying the P implantation dose. A secondary ion mass spectrometry (SIMS) analysis of the BSG layer after the B diffusion revealed that the B diffusion retardation is not due to potential P content in the BSG layer but rather caused by the n-type doping of the crystalline silicon itself. Based on the observations the B diffusion retardation was classified into three groups: (i) no reduction of B diffusivity, (ii) reduced B diffusivity, and (iii) blocking of the B diffusion. The retardation of B diffusion can well be explained by the phosphorus doping level resulting in a Fermi level shift and pairing of B and P ions, both reducing the B diffusivity. Besides these main influences, there are probably additional transient phenomena responsible for the blocking of boron. Those might be an interstitial transport mechanism caused by P diffusion that reduces interstitial concentration at the surface or the silicon/BSG interface shift due to oxidation during the BBr3 diffusion process. Lifetime measurements revealed that the residual (non-blocked) B leads to an increased dark saturation current density in the P doped region. Nevertheless, electrical quality is on a high level and was further increased by reducing the B dose as well as by removing the first few nanometers of the silicon surface after the BBr3 diffusion« less

The preparation of in situ doped hydrogenated amorphous silicon by homogeneous chemical vapor deposition

NASA Astrophysics Data System (ADS)

Meyerson, B. S.; Scott, B. A.; Wolford, D. J.

1983-03-01

Raman scattering, infrared absorption, conductivity measurements, electron microprobe, and secondary ion mass spectrometry (SIMS) were used to characterize boron and phosphorus doped hydrogenated amorphous silicon (a-Si:H) films prepared by Homogeneous Chemical Vapor Deposition (HOMOCVD). HOMOCVD is a thermal process which relies upon the gas phase pyrolysis of a source (silane containing up to 1.0% diborane or phosphine) to generate activated species for deposition upon a cooled substrate. Doped films prepared at 275 °C by this process were found to contain ˜12-at. % hydrogen as determined by infrared absorption. We examined dopant incorporation from the gas phase, obtaining values for a distribution coefficient CD (film dopant content/gas phase dopant concentration, atomic basis) of 0.33≤CD ≤0.63 for boron, while 0.4≤CD ≤10.75 in the limits 3.3×10-5≤PH3/SiH4≤0.004. We interpret the data as indicative of the formation of an unstable phosphorus/silicon intermediate in the gas phase, leading to the observed enhancements in CD at high gas phase phosphine content. HOMOCVD films doped at least as efficiently as their prepared counterparts, but tended to achieve higher conductivities [σ≥0.1 (Ω cm)-1 for 4.0% incorporated phosphorus] in the limit of heavy doping. Raman spectra showed no evidence of crystallinity in the doped films. Film properties (conductivity, activation energy of of conduction) have not saturated at the doping levels investigated here, making the attainment of higher ``active'' dopant levels a possibility. We attribute the observation that HOMOCVD appears more amenable to high ``active'' dopant levels than plasma techniques to the low (˜0.1 eV) thermal energy at which HOMOCVD proceeds, versus ˜10-100 eV for plasma techniques. Low substrate temperature (75 °C) doped films were prepared with initial results showing these films to dope as readily as those prepared at high temperature (T˜275 °C).

Effect of atmospheric parameters on silicon cell performance

NASA Technical Reports Server (NTRS)

Curtis, H. B.

1976-01-01

The effects of changing atmospheric parameters on the performance of a typical silicon solar cell were calculated. The precipitable water vapor content, airmass and turbidity were varied over wide ranges and the normal terrestrial distribution of spectral irradiance was studied. The cell short-circuit current was then computed for each spectral irradiance distribution using the cell spectral response. Data are presented in the form of calibration number (cell current/incident irradiance) vs. water vapor content or turbidity.

Solubilization and spore recovery from silicone polymers. Ph.D. Thesis

NASA Technical Reports Server (NTRS)

Hsiao, Y. C.

1974-01-01

A non-sporicidal technique for solvent degradation of cured silicone polymers was developed which involves chemical degradation of cured silicone polymers by amine solvents at room temperature. Substantial improvements were obtained in the recovery of seeded spores from room temperature cured polymers as compared to the standard recovery procedures, which indicates that the curing process is not sufficiently exothermic to reduce spore viability. The dissolution reaction of cured silicone polymers whith amine solvents is proposed to occur by bimolecular nucleophilic displacement. The chemical structure of silicone polymers was determined by spectroscopic methods. The phenyl to methyl ratio, R/Si ratio, molecular weight, and hydroxyl content of the silicone resins were determined.

Silicon in Imperata cylindrica (L.) P. Beauv: content, distribution, and ultrastructure.

PubMed

Rufo, Lourdes; Franco, Alejandro; de la Fuente, Vicenta

2014-07-01

Silicon concentration, distribution, and ultrastructure of silicon deposits in the Poaceae Imperata cylindrica (L.) P. Beauv. have been studied. This grass, known for its medicinal uses and also for Fe hyperaccumulation and biomineralization capacities, showed a concentration of silicon of 13,705 ± 9,607 mg/kg dry weight. Silicon was found as an important constituent of cell walls of the epidermis of the whole plant. Silica deposits were found in silica bodies, endodermis, and different cells with silicon-collapsed lumen as bulliforms, cortical, and sclerenchyma cells. Transmission electron microscope observations of these deposits revealed an amorphous material of an ultrastructure similar to that previously reported in silica bodies of other Poaceae.

Silicon alleviates simulated acid rain stress of Oryza sativa L. seedlings by adjusting physiology activity and mineral nutrients.

PubMed

Ju, Shuming; Wang, Liping; Yin, Ningning; Li, Dan; Wang, Yukun; Zhang, Cuiying

2017-11-01

Silicon (Si) has been a modulator in plants under abiotic stresses, such as acid rain. To understand how silicon made an effect on rice (Oryza sativa L.) exposed to simulated acid rain (SAR) stress, the growth, physiologic activity, and mineral nutrient content in leaves of rice were investigated. The results showed that combined treatments with Si (1.0, 2.0, or 4.0 mM) and SAR (pH 4.0, 3.0, or 2.0) obviously improved the rice growth compared with the single treatment with SAR. Incorporation of Si into SAR treatment decreased malondialdehyde (MDA) content; increased soluble protein and proline contents; promoted CAT, POD, SOD, and APX activity; and maintained the K, Ca, Mg, Fe, Zn, Cu content balance in leaves of rice seedlings under SAR stress. The moderate concentration of Si (2.0 mM) was better than the low and high concentration of Si (1.0 and 4.0 mM). Therefore, application of Si could be a better strategy for maintaining the crop productivity in acid rain regions.

[Influences of tide on silicon and nitrogen contents in soil and porewater in the Minjiang Ri-ver estuary, Southeast China].

PubMed

Hou, Guan Yun; Zhai, Shui Jing; Le, Xiao Qing; Tong, Chuan

2017-01-01

Taking Shanyuntan wetland in the Minjiang River estuary as test object, the dissolved silicates (DSi) and inorganic nitrogen contents in porewater and the biogenic silica (BSi) and total nitrogen contents in surface soil of the Phragmites australis wetland, Cyperus malaccensis wetland and Spartina alterniflora wetland were measured in October 2014 (spring tide month) and April 2015 (neap tide month), respectively, to illuminate the influence of tide on silicon and nitrogen contents in soil and porewater of estuarine wetland. Results showed that the DSi content in porewater and the BSi content in surface soil in spring tide month were slightly higher than those in neap tide month, with the highest being observed on neap tide day and the lowest occurring on spring tide day. In contrast, the BSi content in surface soil on spring tide day showed an opposite trend with that on neap tide day. The contents of NH 4 + -N and NO 3 - -N in porewater of different wetland soils in spring tide month were higher than those in neap tide month, while the content of NH 4 + -N on spring tide day was significantly higher than that on neap tide day (P<0.05). The study found that hydrological conditions such as flooding duration and drying-wetting alternation caused by tide had great influences on silicon and nitrogen contents in porewater and surface soil, and vegetation types also showed great influences on their distributions in intertidal wetland of the Minjiang River estuary.

Distribution of Silicified Microstructures, Regulation of Cinnamyl Alcohol Dehydrogenase and Lodging Resistance in Silicon and Paclobutrazol Mediated Oryza sativa

PubMed Central

Dorairaj, Deivaseeno; Ismail, Mohd Razi

2017-01-01

Lodging is a phenomenon that affects most of the cereal crops including rice, Oryza sativa. This is due to the fragile nature of herbaceous plants whose stems are non-woody, thus affecting its ability to grow upright. Silicon (Si), a beneficial nutrient is often used to toughen and protect plants from biotic and abiotic stresses. Deposition of Si in plant tissues enhances the rigidity and stiffness of the plant as a whole. Silicified cells provide the much needed strength to the culm to resist breaking. Lignin plays important roles in cell wall structural integrity, stem strength, transport, mechanical support, and plant pathogen defense. The aim of this study is to resolve effects of Si on formation of microstructure and regulation of cinnamyl alcohol dehydrogenase (CAD), a key gene responsible for lignin biosynthesis. Besides evaluating silicon, paclobutrazol (PBZ) a plant growth retartdant that reduces internode elongation is also incorporated in this study. Hardness, brittleness and stiffness were improved in presence of silicon thus reducing lodging. Scanning electron micrographs with the aid of energy dispersive x-ray (EDX) was used to map silicon distribution. Presence of trichomes, silica cells, and silica bodies were detected in silicon treated plants. Transcripts of CAD gene was also upregulated in these plants. Besides, phloroglucinol staining showed presence of lignified vascular bundles and sclerenchyma band. In conclusion, silicon treated rice plants showed an increase in lignin content, silicon content, and formation of silicified microstructures. PMID:28747889

Multiparametric Analyses Reveal the pH-Dependence of Silicon Biomineralization in Diatoms

PubMed Central

Hervé, Vincent; Derr, Julien; Douady, Stéphane; Quinet, Michelle; Moisan, Lionel; Lopez, Pascal Jean

2012-01-01

Diatoms, the major contributors of the global biogenic silica cycle in modern oceans, account for about 40% of global marine primary productivity. They are an important component of the biological pump in the ocean, and their assemblage can be used as useful climate proxies; it is therefore critical to better understand the changes induced by environmental pH on their physiology, silicification capability and morphology. Here, we show that external pH influences cell growth of the ubiquitous diatom Thalassiosira weissflogii, and modifies intracellular silicic acid and biogenic silica contents per cell. Measurements at the single-cell level reveal that extracellular pH modifications lead to intracellular acidosis. To further understand how variations of the acid-base balance affect silicon metabolism and theca formation, we developed novel imaging techniques to measure the dynamics of valve formation. We demonstrate that the kinetics of valve morphogenesis, at least in the early stages, depends on pH. Analytical modeling results suggest that acidic conditions alter the dynamics of the expansion of the vesicles within which silica polymerization occurs, and probably its internal pH. Morphological analysis of valve patterns reveals that acidification also reduces the dimension of the nanometric pores present on the valves, and concurrently overall valve porosity. Variations in the valve silica network seem to be more correlated to the dynamics and the regulation of the morphogenesis process than the silicon incorporation rate. These multiparametric analyses from single-cell to cell-population levels demonstrate that several higher-level processes are sensitive to the acid-base balance in diatoms, and its regulation is a key factor for the control of pattern formation and silicon metabolism. PMID:23144697

Relationship of Water Content With Silicon and Fluorine Contents of Silicone-Hydrogel Contact Lens Materials.

PubMed

Dupre, Terin E; Benjamin, William J

2018-06-25

The relationship between water (W) content and silicon (Si) content of silicone-hydrogel (SiHy) contact lens materials was inspected using identical methodologies, equipment, and operators for materials composing 16 types of commercially available SiHy contact lenses. Fluorine (F) content was included in the analysis for the three materials also containing a fluoropolymer. One type of lens consisted of a bulk SiHy material coated with thin layers of conventional hydrogel. SiHy materials were obtained in the form of 16 contact lens brands purchased on the open market in a common range of refractive powers from -3 to +6 D in single lots. All test lenses were equilibrated at room temperature in a standard saline recommended in the American National Standards Institute Z80.20-2016 and International Organization for Standardization (ISO) 18369-4:2017 standards. W content was obtained gravimetrically, in %, according to those standards for 16 lenses of each SiHy material. Si content was determined in % using inductively coupled plasma optical emission spectroscopy for four digested lenses of each material. F content was determined in % using an ion-selective electrode for four combusted lenses of each of the three fluorinated SiHy materials. W and Si contents of the bulk SiHy material of the coated lens were estimated by computational exclusion of the hydrogel layers. The linear coefficients of determination (R, n=16) were -0.7576 (relating mean dry Si content [n=4] to mean W content [n=16]) and -0.8819 (relating mean hydrated Si content [n=4] to mean W content [n=16]). When the 4 SiHy materials that were fluorinated or coated were excluded from the analysis, the R values (n=12) were -0.8869 and -0.9263, respectively. When F contents and the coating were added to the assessments, the linear coefficients of determination (R, n=16) became -0.8948 (relating mean dry [Si+F] content to mean W content) and -0.9397 (relating mean hydrated [Si+F] content to mean W content). There is a fundamental negative linear relationship between Si and W contents for SiHy contact lens materials above 35% W content that is followed when F content and hydrogel coatings are empirically added to the analysis below 35% W content. The relationship was tightest for hydrated (Si+F) content and W content, for which the regression equation had an R of -0.9397: (Si+F)=-0.3073 (W)+22.148. The relationship between (Si+F) and W therefore seems to be based on composition rather than structure of available SiHy contact lens materials.

Addressing the amorphous content issue in quantitative phase analysis : the certification of NIST SRM 676a.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Cline, J. P.; Von Dreele, R. B.; Winburn, R.

2011-07-01

A non-diffracting surface layer exists at any boundary of a crystal and can comprise a mass fraction of several percent in a finely divided solid. This has led to the long-standing issue of amorphous content in standards for quantitative phase analysis (QPA). NIST standard reference material (SRM) 676a is a corundum ({alpha}-Al{sub 2}O{sub 3}) powder, certified with respect to phase purity for use as an internal standard in powder diffraction QPA. The amorphous content of SRM 676a is determined by comparing diffraction data from mixtures with samples of silicon powders that were engineered to vary their specific surface area. Undermore » the (supported) assumption that the thickness of an amorphous surface layer on Si was invariant, this provided a method to control the crystalline/amorphous ratio of the silicon components of 50/50 weight mixtures of SRM 676a with silicon. Powder diffraction experiments utilizing neutron time-of-flight and 25 keV and 67 keV X-ray energies quantified the crystalline phase fractions from a series of specimens. Results from Rietveld analyses, which included a model for extinction effects in the silicon, of these data were extrapolated to the limit of zero amorphous content of the Si powder. The certified phase purity of SRM 676a is 99.02% {+-} 1.11% (95% confidence interval). This novel certification method permits quantification of amorphous content for any sample of interest, by spiking with SRM 676a.« less

Addressing the Amorphous Content Issue in Quantitative Phase Analysis: The Certification of NIST Standard Reference Material 676a

DOE Office of Scientific and Technical Information (OSTI.GOV)

J Cline; R Von Dreele; R Winburn

2011-12-31

A non-diffracting surface layer exists at any boundary of a crystal and can comprise a mass fraction of several percent in a finely divided solid. This has led to the long-standing issue of amorphous content in standards for quantitative phase analysis (QPA). NIST standard reference material (SRM) 676a is a corundum ({alpha}-Al{sub 2}O{sub 3}) powder, certified with respect to phase purity for use as an internal standard in powder diffraction QPA. The amorphous content of SRM 676a is determined by comparing diffraction data from mixtures with samples of silicon powders that were engineered to vary their specific surface area. Undermore » the (supported) assumption that the thickness of an amorphous surface layer on Si was invariant, this provided a method to control the crystalline/amorphous ratio of the silicon components of 50/50 weight mixtures of SRM 676a with silicon. Powder diffraction experiments utilizing neutron time-of-flight and 25 keV and 67 keV X-ray energies quantified the crystalline phase fractions from a series of specimens. Results from Rietveld analyses, which included a model for extinction effects in the silicon, of these data were extrapolated to the limit of zero amorphous content of the Si powder. The certified phase purity of SRM 676a is 99.02% {+-} 1.11% (95% confidence interval). This novel certification method permits quantification of amorphous content for any sample of interest, by spiking with SRM 676a.« less

Dephosphorization of Levitated Silicon-Iron Droplets for Production of Solar-Grade Silicon

NASA Astrophysics Data System (ADS)

Le, Katherine; Yang, Yindong; Barati, Mansoor; McLean, Alexander

2018-05-01

The treatment of relatively inexpensive silicon-iron alloys is a potential refining route in order to generate solar-grade silicon. Phosphorus is one of the more difficult impurity elements to remove by conventional processing. In this study, electromagnetic levitation was used to investigate phosphorus behavior in silicon-iron alloy droplets exposed to H2-Ar gas mixtures under various experimental conditions including, refining time, temperature (1723 K to 1993 K), gas flow rate, iron content, and initial phosphorus concentration in the alloy. Thermodynamic modeling of the dephosphorization reaction permitted prediction of the various gaseous products and indicated that diatomic phosphorus is the dominant species formed.

Method for producing fluorinated diamond-like carbon films

DOEpatents

Hakovirta, Marko J.; Nastasi, Michael A.; Lee, Deok-Hyung; He, Xiao-Ming

2003-06-03

Fluorinated, diamond-like carbon (F-DLC) films are produced by a pulsed, glow-discharge plasma immersion ion processing procedure. The pulsed, glow-discharge plasma was generated at a pressure of 1 Pa from an acetylene (C.sub.2 H.sub.2) and hexafluoroethane (C.sub.2 F.sub.6) gas mixture, and the fluorinated, diamond-like carbon films were deposited on silicon <100>substrates. The film hardness and wear resistance were found to be strongly dependent on the fluorine content incorporated into the coatings. The hardness of the F-DLC films was found to decrease considerably when the fluorine content in the coatings reached about 20%. The contact angle of water on the F-DLC coatings was found to increase with increasing film fluorine content and to saturate at a level characteristic of polytetrafluoroethylene.

In vitro adhesion of Acanthamoeba castellanii to soft contact lenses depends on water content and disinfection procedure.

PubMed

Reverey, Julia F; Fromme, Roland; Leippe, Matthias; Selhuber-Unkel, Christine

2014-08-01

To compare the potential of different soft contact lenses to be contaminated with Acanthamoeba castellanii as a function of material parameters and cleaning procedures. Different unworn soft hydrogel and silicone hydrogel contact lenses were incubated with human pathogenic A. castellanii. The adhesion of the acanthamoebae was investigated on the contact lenses and put into relation to their material parameters. The efficacy of a recommended contact lens cleaning procedure in reducing A. castellanii adhesion was investigated. We found that material parameters such as elastic modulus, silicone content, ionic properties and swelling do not influence the adhesion of acanthamoebae to soft contact lenses. A material parameter that influenced adhesion significantly was the water content of the lens. With increasing water content, the adhesion of acanthamoebae increased. By following the cleaning instructions of the manufacturer the contamination of the lenses with A. castellanii could be reduced to a minimum, as shown both on contact lenses and in control experiments. With this study we show that for the tested lenses, the adhesion of A. castellanii to contact lenses is independent of the silicone content of the lens, but depends nonlinearly on the water content of the lens. Furthermore, we demonstrate that applying proper lens cleaning procedures minimizes the risk of acanthamoebae adhesion to contact lenses. Copyright © 2013 British Contact Lens Association. Published by Elsevier Ltd. All rights reserved.

Dependences of deposition rate and OH content on concentration of added trichloroethylene in low-temperature silicon oxide films deposited using silicone oil and ozone gas

NASA Astrophysics Data System (ADS)

Horita, Susumu; Jain, Puneet

2018-03-01

We investigated the dependences of the deposition rate and residual OH content of SiO2 films on the concentration of trichloroethylene (TCE), which was added during deposition at low temperatures of 160-260 °C with the reactant gases of silicone oil (SO) and O3. The deposition rate depends on the TCE concentration and is minimum at a concentration of ˜0.4 mol/m3 at 200 °C. The result can be explained by surface and gas-phase reactions. Experimentally, we also revealed that the thickness profile is strongly affected by gas-phase reaction, in which the TCE vapor was blown directly onto the substrate surface, where it mixed with SO and O3. Furthermore, it was found that adding TCE vapor reduces residual OH content in the SiO2 film deposited at 200 °C because TCE enhances the dehydration reaction.

Wettability of Molten Aluminum-Silicon Alloys on Graphite and Surface Tension of Those Alloys at 1273 K (1000 °C)

NASA Astrophysics Data System (ADS)

Mao, Weiji; Noji, Takayasu; Teshima, Kenichiro; Shinozaki, Nobuya

2016-06-01

The wettability of molten aluminum-silicon alloys with silicon contents of 0, 6, 10, and 20 mass pct on graphite substrates by changing the placing sequence of aluminum and silicon and the surface tension of those alloys were investigated at 1273 K (1000 °C) using the sessile drop method under vacuum. The results showed that the wetting was not affected by changing the placing sequence of the Al-Si alloys on the graphite substrates. The wettability was not improved significantly upon increasing the Si content from 0 to 10 mass pct, whereas a notable decrease of 22 deg in the contact angle was observed when increasing the Si content from 10 to 20 mass pct. This was attributed to the transformation of the interfacial reaction product from Al4C3 into SiC, provided the addition of Si to Al was sufficient. It was verified that the liquid Al can wet the SiC substrate very well in nature, which might explain why the occurrence of SiC would improve the wettability of the Al-20 mass pct Si alloy on the graphite substrate. The results also showed that the surface tension values of the molten Al-Si alloys decreased monotonously with an increase in Si content, being 875, 801, 770, and 744 mN/m for molten Al, Al-6 mass pct Si, Al-10 mass pct Si, and Al-20 mass pct Si alloys, respectively.

Optically efficient InAsSb nanowires for silicon-based mid-wavelength infrared optoelectronics.

PubMed

Zhuang, Q D; Alradhi, H; Jin, Z M; Chen, X R; Shao, J; Chen, X; Sanchez, Ana M; Cao, Y C; Liu, J Y; Yates, P; Durose, K; Jin, C J

2017-03-10

InAsSb nanowires (NWs) with a high Sb content have potential in the fabrication of advanced silicon-based optoelectronics such as infrared photondetectors/emitters and highly sensitive phototransistors, as well as in the generation of renewable electricity. However, producing optically efficient InAsSb NWs with a high Sb content remains a challenge, and optical emission is limited to 4.0 μm due to the quality of the nanowires. Here, we report, for the first time, the success of high-quality and optically efficient InAsSb NWs enabling silicon-based optoelectronics operating in entirely mid-wavelength infrared. Pure zinc-blende InAsSb NWs were realized with efficient photoluminescence emission. We obtained room-temperature photoluminescence emission in InAs NWs and successfully extended the emission wavelength in InAsSb NWs to 5.1 μm. The realization of this optically efficient InAsSb NW material paves the way to realizing next-generation devices, combining advances in III-V semiconductors and silicon.

Gallium arsenide single crystal solar cell structure and method of making

NASA Technical Reports Server (NTRS)

Stirn, Richard J. (Inventor)

1983-01-01

A production method and structure for a thin-film GaAs crystal for a solar cell on a single-crystal silicon substrate (10) comprising the steps of growing a single-crystal interlayer (12) of material having a closer match in lattice and thermal expansion with single-crystal GaAs than the single-crystal silicon of the substrate, and epitaxially growing a single-crystal film (14) on the interlayer. The material of the interlayer may be germanium or graded germanium-silicon alloy, with low germanium content at the silicon substrate interface, and high germanium content at the upper surface. The surface of the interface layer (12) is annealed for recrystallization by a pulsed beam of energy (laser or electron) prior to growing the interlayer. The solar cell structure may be grown as a single-crystal n.sup.+ /p shallow homojunction film or as a p/n or n/p junction film. A Ga(Al)AS heteroface film may be grown over the GaAs film.

Silicon surface passivation by polystyrenesulfonate thin films

NASA Astrophysics Data System (ADS)

Chen, Jianhui; Shen, Yanjiao; Guo, Jianxin; Chen, Bingbing; Fan, Jiandong; Li, Feng; Liu, Haixu; Xu, Ying; Mai, Yaohua

2017-02-01

The use of polystyrenesulfonate (PSS) thin films in a high-quality passivation scheme involving the suppression of minority carrier recombination at the silicon surface is presented. PSS has been used as a dispersant for aqueous poly-3,4-ethylenedioxythiophene. In this work, PSS is coated as a form of thin film on a Si surface. A millisecond level minority carrier lifetime on a high resistivity Si wafer is obtained. The film thickness, oxygen content, and relative humidity are found to be important factors affecting the passivation quality. While applied to low resistivity silicon wafers, which are widely used for photovoltaic cell fabrication, this scheme yields relatively shorter lifetime, for example, 2.40 ms on n-type and 2.05 ms on p-type wafers with a resistivity of 1-5 Ω.cm. However, these lifetimes are still high enough to obtain high implied open circuit voltages (Voc) of 708 mV and 697 mV for n-type and p-type wafers, respectively. The formation of oxides at the PSS/Si interface is suggested to be responsible for the passivation mechanism.

Ceramic silicon-boron-carbon fibers from organic silicon-boron-polymers

NASA Technical Reports Server (NTRS)

Riccitiello, Salvatore R. (Inventor); Hsu, Ming-Ta S. (Inventor); Chen, Timothy S. (Inventor)

1993-01-01

Novel high strength ceramic fibers derived from boron, silicon, and carbon organic precursor polymers are discussed. The ceramic fibers are thermally stable up to and beyond 1200 C in air. The method of preparation of the boron-silicon-carbon fibers from a low oxygen content organosilicon boron precursor polymer of the general formula Si(R2)BR(sup 1) includes melt-spinning, crosslinking, and pyrolysis. Specifically, the crosslinked (or cured) precursor organic polymer fibers do not melt or deform during pyrolysis to form the silicon-boron-carbon ceramic fiber. These novel silicon-boron-carbon ceramic fibers are useful in high temperature applications because they retain tensile and other properties up to 1200 C, from 1200 to 1300 C, and in some cases higher than 1300 C.

Evaluating a vessel for suitability for containing fluid

DOEpatents

Barefield, II, James E.; Judge, Elizabeth J.; Le, Loan A.; Lopez, Leon N.; Beveridge, Andrew C.; Chapman, Daniel R.; Taylor, Seth T.

2017-05-30

A method for evaluating a vessel for suitability to contain a fluid includes providing a vessel and forming a polished surface portion of the vessel by removing oxidation and/or contaminants from a portion of the vessel. The method further includes applying a focused laser to the polished surface portion to form plasma on the polished surface portion, and determining whether the vessel is suitable for containing a fluid based on silicon content of the polished surface portion. The silicon content is estimated based on light emitted from the plasma.

Thin film silicon by a microwave plasma deposition technique: Growth and devices, and, interface effects in amorphous silicon/crystalline silicon solar cells

NASA Astrophysics Data System (ADS)

Jagannathan, Basanth

Thin film silicon (Si) was deposited by a microwave plasma CVD technique, employing double dilution of silane, for the growth of low hydrogen content Si films with a controllable microstructure on amorphous substrates at low temperatures (<400sp°C). The double dilution was achieved by using a Ar (He) carrier for silane and its subsequent dilution by Hsb2. Structural and electrical properties of the films have been investigated over a wide growth space (temperature, power, pressure and dilution). Amorphous Si films deposited by silane diluted in He showed a compact nature and a hydrogen content of ˜8 at.% with a photo/dark conductivity ratio of 10sp4. Thin film transistors (W/L = 500/25) fabricated on these films, showed an on/off ratio of ˜10sp6 and a low threshold voltage of 2.92 volts. Microcrystalline Si films with a high crystalline content (˜80%) were also prepared by this technique. Such films showed a dark conductivity ˜10sp{-6} S/cm, with a conduction activation energy of 0.49 eV. Film growth and properties have been compared for deposition in Ar and He carrier systems and growth models have been proposed. Low temperature junction formation by undoped thin film silicon was examined through a thin film silicon/p-type crystalline silicon heterojunctions. The thin film silicon layers were deposited by rf glow discharge, dc magnetron sputtering and microwave plasma CVD. The hetero-interface was identified by current transport analysis and high frequency capacitance methods as the key parameter controlling the photovoltaic (PV) response. The effect of the interface on the device properties (PV, junction, and carrier transport) was examined with respect to modifications created by chemical treatment, type of plasma species, their energy and film microstructure interacting with the substrate. Thermally stimulated capacitance was used to determine the interfacial trap parameters. Plasma deposition of thin film silicon on chemically clean c-Si created electron trapping sites while hole traps were seen when a thin oxide was present at the interface. Under optimized conditions, a 10.6% efficient cell (11.5% with SiOsb2 A/R) with an open circuit voltage of 0.55 volts and a short circuit current density of 30 mA/cmsp2 was fabricated.

The Effect of Polymer Char on Nitridation Kinetics of Silicon

NASA Technical Reports Server (NTRS)

Chan, Rickmond C.; Bhatt, Ramakrishna T.

1994-01-01

Effects of polymer char on nitridation kinetics of attrition milled silicon powder have been investigated from 1200 to 1350 C. Results indicate that at and above 1250 C, the silicon compacts containing 3.5 wt percent polymer char were fully converted to Si3N4 after 24 hr exposure in nitrogen. In contrast, the silicon compacts without polymer char could not be fully converted to Si3N4 at 1350 C under similar exposure conditions. At 1250 and 1350 C, the silicon compacts with polymer char showed faster nitridation kinetics than those without the polymer char. As the polymer char content is increased, the amount of SiC in the nitrided material is also increased. By adding small amounts (approx. 2.5 wt percent) of NiO, the silicon compacts containing polymer char can be completely nitrided at 1200 C. The probable mechanism for the accelerated nitridation of silicon containing polymer char is discussed.

Processing Research on Chemically Vapor Deposited Silicon Nitride

DTIC Science & Technology

1981-12-01

forming silicon carbide to reduce free silicon content. (b) Boron and aluminum were selected as two single-valence elements with small atomic radii which...obtained in cold wall (CW-3) runs were sliced into small flexure bars (19.1x3.2xt(mm) where t = thickness) if they appeared to be of suitable quality...discussed later. Addition of borcn trichloride in small amounts (Run 8) caused Formation of a light blue translucent deposit which contained at least one

Effect of pendent chains on the interfacial properties of thin polydimethylsiloxane (PDMS) networks.

PubMed

Landherr, Lucas J T; Cohen, Claude; Archer, Lynden A

2011-05-17

The interfacial properties of end-linked polydimethylsiloxane (PDMS) films on silicon are examined. Thin cross-linked PDMS films (∼10 μm thick) were synthesized over a self-assembled monolayer supported on a silicon wafer. By systematically varying the concentration of monofunctional PDMS in a mixture with telechelic precursor molecules, structures ranging from near-ideal elastic networks to poorly cross-linked networks composed of a preponderance of dangling/pendent chains were synthesized. Lateral force microscopy (LFM) employing bead probes was used to quantify the effect of network structure on the interfacial friction coefficient and residual force. Indentation measurements employing an AFM in force mode were used to characterize the elastic modulus and the pull-off force for the films as a function of pendent chain content. These measurements were complemented with conventional mechanical rheometry measurements on similar thick network films to determine their bulk rheological properties. All networks studied manifested interfacial friction coefficients substantially lower than that of bare silicon. PDMS networks with the lowest pendent chain content displayed friction coefficients close to 1 order of magnitude lower than that of bare silicon, whereas networks with the highest pendent chain content manifested friction coefficients about 3 times lower than that of bare silicon. At intermediate sliding velocities, a crossover in the interfacial friction coefficient was observed, wherein cross-linked PDMS films with the least amount of pendent chains exhibit the highest friction coefficient. These observations are discussed in terms of the structure of the films and relaxation dynamics of elastic strands and dangling chains in tethered network films.

Lithium insertion in carbonaceous materials containing silicon

NASA Astrophysics Data System (ADS)

Wilson, Alfred Macdonald

Three different series of silicon-containing carbonaceous materials were synthesized for use as anodes in lithium ion cells. Disordered (or pregraphitic) carbons containing nanodispersed silicon were prepared by the chemical vapour deposition (CVD) of various chlorosilanes (SiClsb4, (CHsb3)sb2Clsb2Si, and (CHsb3)sb3ClSi) with benzene in two different apparatuses. Silicon oxycarbide glasses were synthesized by the pyrolysis of over 50 silicon-containing polymers at various temperatures, although the principal materials in the study were prepared at 1000sp°C. Finally, materials which we believe to be similar to disordered carbons containing nanodispersed silicon were prepared by the pyrolysis of various blends of pitches with polysilanes. Powder X-ray diffraction was used to learn about the structure of all the materials made. Thermal gravimetric analysis was used to determine the silicon content in the CVD materials and, when coupled to a residual gas analyzer, to study the decomposition process of the polymers. Near edge X-ray absorption spectroscopy measurements of the silicon L- and K-edges of CVD materials and the silicon K-edges of silicon oxycarbides were used to learn about local chemical environments of the silicon atoms. Lithium metal electrochemical test cells of the silicon-containing CVD materials showed larger capacities (up to 500 mAh/g) than pure carbons prepared in the same way (˜300 mAh/g). The additional capacity was observed to be centered near 0.4 V on charge, the average voltage observed for the removal of lithium from a silicon-lithium alloy. Chemical analysis showed that the stoichiometries of materials made by polymer pyrolysis were distributed over a well-defined region in the Si-O-C Gibbs phase diagram. An interesting series of materials is found near the line in the Si-O-C Gibbs triangle connecting carbon to SiOsb{1.3}. Lithium metal electrochemical test cells made using all the silicon oxycarbides synthesized showed that a stoichiometry of about Sisb{.25}Csb{.45}Osb{.30} gave the maximum reversible capacity (about 900 mAh/g). However, materials near this stoichiometry exhibit large irreversible capacities (>350 mAh/g) and significant hysteresis (the voltage difference between charge and discharge) in the voltage profile (˜0.8 V). In an attempt to reduce the oxygen content in one of the silicon oxycarbide glasses, a sample was washed in a dilute solution of hydrofluoric acid (HF) for times ranging from 2 minutes to 24 hours. The material lost, at most, 40 percent of its initial mass, although there was only a small change in its stoichiometry. In addition to the techniques mentioned above, small angle X-ray scattering and BET surface area measurements were used to study the microscopic pore network that was created by the HF washing. Lithium metal electrochemical test cells made using the product of pyrolysing pitch-polysilane blends showed that the capacity increased with silicon content from 340 mAh/g for pure carbon to a maximum of 600 mAh/g for samples with about 15 atomic % silicon (Sisb{.14}Osb{.09}Csb{.77}). The capacity then decreased to near zero as the composition approached SiC. These materials contain oxygen which is correlated to irreversible capacity loss. (Abstract shortened by UMI.)

THE METABOLISM OF SILICON IN THE RAT AND ITS RELATION TO THE FORMATION OF ARTIFICIAL SILICEOUS CALCULI

PubMed Central

Keeler, Richard F.; Lovelace, Stuart A.

1959-01-01

The urinary excretion of silicon in the rat was found to be enhanced beyond normal levels by the administration of various chemical forms of silicon. The excretion was enhanced to a much greater degree by the administration of ethyl silicate than by magnesium trisilicate, sodium metasilicate, or water glass. The tolerance level of rats to sustained daily doses of ethyl silicate fed via stomach tube was approximately 15 to 30 mg. of silicon per rat per day. Urinary silicon excretion was found to be a straight line function of the concentration of ethyl silicate administered, via stomach tube, with approximately 18 per cent of the administered silicon appearing in the urine at all levels tested. Using sustained dietary additions of ethyl silicate as a means of enhancing urine silicon levels, artificial siliceous urinary calculi were consistently produced on zinc pellets implanted in the bladders of rats. PMID:13654631

Impacts of Priming with Silicon on the Growth and Tolerance of Maize Plants to Alkaline Stress.

PubMed

Abdel Latef, Arafat A; Tran, Lam-Son P

2016-01-01

Silicon (Si) has been known to augment plant defense against biotic and abiotic pressures. Maize (Zea maize L.) is classified as a Si accumulator and is relatively susceptible to alkaline stress. In this study, seeds of maize were grown in pots and exposed to various concentrations of Na2CO3 (0, 25, 50, and 75 mM) with or without 1.5 mM Si in the form of sodium metasilicate Na2O3Si.5H2O for 25 days. Alkaline-stressed plants showed a decrease in growth parameters, leaf relative water content (LRWC), and the contents of photosynthetic pigments, soluble sugars, total phenols and potassium ion (K(+)), as well as potassium/sodium ion (K(+)/Na(+)) ratio. By contrast, alkaline stress increased the contents of soluble proteins, total free amino acids, proline, Na(+) and malondialdehyde (MDA), as well as the activities of superoxide dismutase (SOD), catalase (CAT), and peroxidase (POD) in stressed plants. On the other hand, application of Si by seed-priming improved growth of stressed plants, which was accompanied by the enhancement in LRWC, and levels of photosynthetic pigments, soluble sugars, soluble proteins, total free amino acids and K(+), as well as activities of SOD, CAT, and POD enzymes. Furthermore, Si supplement resulted in a decrease in the contents of proline, MDA and Na(+), which together with enhanced K(+) level led to a favorable adjustment of K(+)/Na(+) ratio, in stressed plants relative to plants treated with alkaline stress alone. Taken together, these results indicate that Si plays a pivotal role in alleviating the negative effects of alkaline stress on maize growth by improving water status, enhancing photosynthetic pigments, accumulating osmoprotectants rather than proline, activating the antioxidant machinery, and maintaining the balance of K(+)/Na(+) ratio. Thus, our findings demonstrate that seed-priming with Si is an efficient strategy that can be used to boost tolerance of maize plants to alkaline stress.

Crystal imperfection studies of pure and silicon substituted hydroxyapatite using Raman and XRD.

PubMed

Zou, Shuo; Huang, Jie; Best, Serena; Bonfield, William

2005-12-01

Hydroxyapatite (HA) is important in biomedical applications because of its chemical similarity to the mineral content of bone and its consequent bioactivity. Silicon substitution into the hydroxyapatite crystal lattice was found to enhance its bioactivity both in vitro and in vivo [1, 2]. However, the mechanism for the enhancement is still not well understood. In this paper, the crystal imperfections introduced by silicon substitution were studied using XRD and Raman spectroscopy. It was found that silicon substitution did not introduce microstrain, but deceased the crystal size in the hk0 direction. Three new vibration modes and peak broadening were observed in Raman spectra following silicon incorporation. The imperfections introduced by silicon substitution may play a role in enhancing bioactivity. A phenomenological relationship between the width of the PO4 v1 peak and crystal size was established.

Microstructure and Mechanical Properties of Reaction-Formed Silicon Carbide (RFSC) Ceramics

NASA Technical Reports Server (NTRS)

Singh, M.; Behrendt, D. R.

1994-01-01

The microstructure and mechanical properties of reaction-formed silicon carbide (RFSC) ceramics fabricated by silicon infiltration of porous carbon preforms are discussed. The morphological characterization of the carbon preforms indicates a very narrow pore size distribution. Measurements of the preform density by physical methods and by mercury porosimetry agree very well and indicate that virtually all of the porosity in the preforms is open to infiltrating liquids. The average room temperature flexural strength of the RFSC material with approximately 8 at.% free silicon is 369 +/- 28 MPa (53.5 +/- 4 ksi). The Weibull strength distribution data give a characteristic strength value of 381 MPa (55 ksi) and a Weibull modulus of 14.3. The residual silicon content is lower and the strengths are superior to those of most commercially available reaction-bonded silicon carbide materials.

Temperature dependence of the biaxial modulus, intrinsic stress and composition of plasma deposited silicon oxynitride films

NASA Technical Reports Server (NTRS)

Harding, David R.; Ogbuji, Linus U. T.; Freeman, Mathieu J.

1995-01-01

Silicon oxynitride films were deposited by plasma-enhanced chemical-vapor deposition. The elemental composition was varied between silicon nitride and silicon dioxide: SiO(0.3)N(1.0), SiO(0.7)N(1.6), SiO(0.7)N(1.1), and SiO(1.7)N(0.%). These films were annealed in air, at temperatures of 40-240 C above the deposition temperature (260 C), to determine the stability and behavior or each composition. the biaxial modulus, biaxial intrinsic stress, and elemental composition were measured at discrete intervals within the annealing cycle. Films deposited from primarily ammonia possessed considerable hydrogen (up to 38 at.%) and lost nitrogen and hydrogen at anneal temperatures (260-300 C) only marginally higher than the deposition temperature. As the initial oxygen content increased a different mechanism controlled the behavior or the film: The temperature threshold for change rose to approximately equal to 350 C and the loss of nitrogen was compensated by an equivalent rise in the oxygen content. The transformation from silicon oxynitride to silica was completed after 50 h at 400 C. The initial biaxial modulus of all compositions was 21-3- GPa and the intrinsic stress was -30 to 85 MPa. Increasing the oxygen content raised the temperature threshold where cracking first occurred; the two film compositions with the highest initial oxygen content did not crack, even at the highest temperature (450 C) investigated. At 450 C the biaxial modulus increased to approximately equal to 100 GPa and the intrinsic stress was approximately equal to 200 MPa. These increases could be correlated with the observed change in the film's composition. When nitrogen was replaced by oxygen, the induced stress remained lower than the biaxial strength of the material, but, when nitrogen and hydrogen were lost, stress-relieving microcracking occurred.

Impact of implanted phosphorus on the diffusivity of boron and its applicability to silicon solar cells

DOE Office of Scientific and Technical Information (OSTI.GOV)

Schrof, Julian, E-mail: julian.schrof@ise.fraunhofer.de; Müller, Ralph; Benick, Jan

2015-07-28

Boron diffusivity reduction in extrinsically doped silicon was investigated in the context of a process combination consisting of BBr{sub 3} furnace diffusion and preceding Phosphorus ion implantation. The implantation of Phosphorus leads to a substantial blocking of Boron during the subsequent Boron diffusion. First, the influences of ion implantation induced point defects as well as the initial P doping on B diffusivity were studied independently. Here, it was found that not the defects created during ion implantation but the P doping itself results in the observed B diffusion retardation. The influence of the initial P concentration was investigated in moremore » detail by varying the P implantation dose. A secondary ion mass spectrometry (SIMS) analysis of the BSG layer after the B diffusion revealed that the B diffusion retardation is not due to potential P content in the BSG layer but rather caused by the n-type doping of the crystalline silicon itself. Based on the observations the B diffusion retardation was classified into three groups: (i) no reduction of B diffusivity, (ii) reduced B diffusivity, and (iii) blocking of the B diffusion. The retardation of B diffusion can well be explained by the phosphorus doping level resulting in a Fermi level shift and pairing of B and P ions, both reducing the B diffusivity. Besides these main influences, there are probably additional transient phenomena responsible for the blocking of boron. Those might be an interstitial transport mechanism caused by P diffusion that reduces interstitial concentration at the surface or the silicon/BSG interface shift due to oxidation during the BBr{sub 3} diffusion process. Lifetime measurements revealed that the residual (non-blocked) B leads to an increased dark saturation current density in the P doped region. Nevertheless, electrical quality is on a high level and was further increased by reducing the B dose as well as by removing the first few nanometers of the silicon surface after the BBr{sub 3} diffusion.« less

Characterization of the initial level and migration of silicone oil lubricant in empty prefilled syringes for biologics using infrared spectroscopy.

PubMed

Bee, Jared S; Frey, Vadim V; Javed, Urooj; Chung, Jonathan; Corcoran, Marta L; Roussel, Paul S; Krause, Stephan O; Cash, Patricia W; Bishop, Steven M; Dimitrova, Mariana N

2014-01-01

Glass prefillable syringes are lubricated with silicone oil to ensure functionality and a consistent injection for the end user. If excessive silicone is applied, droplets could potentially result in aggregation of sensitive biopharmaceuticals or clouding of the solution. Therefore, monitoring and optimization of the applied silicone layer is critical for prefilled syringe development. The hydrophobic properties of silicone oil, the potential for assay interference, and the very small quantities applied to prefilled syringes present a challenge for the development of a suitable assay. In this work we present a rapid and simple Fourier transform infrared (FTIR) spectroscopy method for quantitation of total silicone levels applied to prefilled syringes. Level-dependent silicone oil migration occurred over time for empty prefilled syringes stored tip-up. However, migration from all prefilled syringes with between 0.25 and 0.8 mg of initial silicone oil resulted in a stable limiting minimum level of between 0.15 and 0.26 mg of silicone in the syringe reached after 1 to 4 years of empty tip-up storage. The results of the FTIR assay correlated well with non-destructive reflectometry characterization of the syringes. This assay can provide valuable data for selection of a robust initial silicone oil target and quality control of prefilled syringes intended for biopharmaceuticals. Glass prefillable syringes are lubricated with silicone oil to ensure functionality and a consistent injection for the end user. If excessive silicone is applied, droplets could potentially result in aggregation of sensitive biopharmaceuticals or clouding of the solution. Therefore, monitoring and optimization of the applied silicone layer is critical for prefilled syringe development. The hydrophobic properties of silicone oil, the potential for assay interference, and the very small quantities applied to prefilled syringes present a challenge for the development of a suitable assay. In this work we present a rapid and simple Fourier transform infrared (FTIR) spectroscopy method for quantitation of total silicone levels applied to prefilled syringes. Level-dependent silicone oil migration occurred over time for empty prefilled syringes stored tip-up. However, migration from all prefilled syringes with between 0.25 and 0.8 mg of initial silicone oil resulted in a stable limiting minimum level of between 0.15 and 0.26 mg of silicone in the syringe reached after 1 to 4 years of empty tip-up storage. The results of the FTIR assay correlated well with non-destructive reflectometry characterization of the syringes. This assay can provide valuable data for selection of a robust initial silicone oil target and quality control of prefilled syringes intended for biopharmaceuticals. © PDA, Inc. 2014.

New trend of radiation application to polymer modification — irradiation in oxygen free atmosphere and at elevated temperature

NASA Astrophysics Data System (ADS)

Seguchi, Tadao

2000-03-01

Polycarbosilane (PCS) fiber as a precursor for ceramic fiber of silicon carbide was cured by electron beam (EB) irradiation under oxygen free atmosphere. Oxygen content in the cured PCS fiber was scarce and the obtained silicon carbide (SiC) fiber with low oxygen content showed high heat resistance up to 1973 K and tensile strength of 3 GPa. Also, the EB cured PCS fiber with very low oxygen content could be converted to silicon nitride (Si 3N 4) fiber by the pyrolysis in NH 3 gas atmosphere, which was the new processing to produce Si 3N 4 fiber. The process of SiC fiber synthesis was developed to the commercial plant. The other application was the crosslinking of polytetrafluoroethylene (PTFE). PTFE, which had been recognized to be a typical chain scission polymer, could be induced to crosslinking by irradiation at the molten state in oxygen free atmosphere. The physical properties such as crystallinity, mechanical properties, etc. changed much by crosslinking, and the radiation resistance was much improved.

Nanofabrication of Arrays of Silicon Field Emitters with Vertical Silicon Nanowire Current Limiters and Self-Aligned Gates

DTIC Science & Technology

2016-08-19

in a dielectric matrix. This paper explores the electronic device applications of dense arrays of silicon nanowires that are embedded in Nanotechnology ... Nanotechnology 27 (2016) 295302 (11pp) doi:10.1088/0957-4484/27/29/295302 Original content from this work may be used under the terms of the Creative...compared 2 Nanotechnology 27 (2016) 295302 S A Guerrera and A I Akinwande to the device reported by Velasquez-Garcia et al, but it also reduces the

Defense Responses in Rice Induced by Silicon Amendment against Infestation by the Leaf Folder Cnaphalocrocis medinalis

PubMed Central

Han, Yongqiang; Li, Pei; Gong, Shaolong; Yang, Lang; Wen, Lizhang; Hou, Maolin

2016-01-01

Silicon (Si) amendment to plants can confer enhanced resistance to herbivores. In the present study, the physiological and cytological mechanisms underlying the enhanced resistance of plants with Si addition were investigated for one of the most destructive rice pests in Asian countries, the rice leaf folder, Cnaphalocrocis medinalis (Guenée). Activities of defense-related enzymes, superoxide dismutase, peroxidase, catalase, phenylalanine ammonia-lyase, and polyphenol oxidase, and concentrations of malondialdehyde and soluble protein in leaves were measured in rice plants with or without leaf folder infestation and with or without Si amendment at 0.32 g Si/kg soil. Silicon amendment significantly reduced leaf folder larval survival. Silicon addition alone did not change activities of defense-related enzymes and malondialdehyde concentration in rice leaves. With leaf folder infestation, activities of the defense-related enzymes increased and malondialdehyde concentration decreased in plants amended with Si. Soluble protein content increased with Si addition when the plants were not infested, but was reduced more in the infested plants with Si amendment than in those without Si addition. Regardless of leaf folder infestation, Si amendment significantly increased leaf Si content through increases in the number and width of silica cells. Our results show that Si addition enhances rice resistance to the leaf folder through priming the feeding stress defense system, reduction in soluble protein content and cell silicification of rice leaves. PMID:27124300

Surface wettability enhancement of silicone hydrogel lenses by processing with polar plastic molds.

PubMed

Lai, Y C; Friends, G D

1997-06-05

In the quest for hydrogel contact lenses with improved extended wear capability, the use of siloxane moieties in the lens materials was investigated. However, the introduction of hydrophobic siloxane groups gave rise to wettability and lipidlike deposit problems. It was found that when polysiloxane-based compositions for hydrogels were processed with polar plastic molds, such as those fabricated from an acrylonitrile-based polymer, the hydrogel lenses fabricated were wettable, with minimized lipidlike deposits. These findings were supported by the wettability of silicone hydrogel films, silicon, and nitrogen element contents near lens surfaces, as well as the results from clinical assessment of silicone hydrogel lenses.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Minissale, S.; Yerci, S.; Dal Negro, L.

We investigate the nonlinear optical properties of Si-rich silicon oxide (SRO) and Si-rich silicon nitride (SRN) samples as a function of silicon content, annealing temperature, and excitation wavelength. Using the Z-scan technique, we measure the non-linear refractive index n{sub 2} and the nonlinear absorption coefficient {beta} for a large number of samples fabricated by reactive co-sputtering. Moreover, we characterize the nonlinear optical parameters of SRN in the broad spectral region 1100-1500 nm and show the strongest nonlinearity at 1500 nm. These results demonstrate the potential of the SRN matrix for the engineering of compact devices with enhanced Kerr nonlinearities formore » silicon photonics applications.« less

Optical and Scanning Electron Microscopy of the Materials International Space Station Experiment (MISSE) Spacecraft Silicone Experiment

NASA Technical Reports Server (NTRS)

Hung, Ching-cheh; de Groh, Kim K.; Banks, Bruce A.

2012-01-01

Under a microscope, atomic oxygen (AO) exposed silicone surfaces are crazed and seen as "islands" separated by numerous crack lines, much analogous to mud-tile cracks. This research characterized and compared the degree of AO degradation of silicones by analyzing optical microscope images of samples exposed to low Earth orbit (LEO) AO as part of the Spacecraft Silicone Experiment. The Spacecraft Silicone Experiment consisted of eight DC 93-500 silicone samples exposed to eight different AO fluence levels (ranged from 1.46 to 8.43 10(exp 21) atoms/sq cm) during two different Materials International Space Station Experiment (MISSE) missions. Image analysis software was used to analyze images taken using a digital camera. To describe the morphological degradation of each AO exposed flight sample, three different parameters were selected and estimated: (1) average area of islands was determined and found to be in the 1000 to 3100 sq mm range; (2) total length of crack lines per unit area of the sample surface were determined and found to be in the range of 27 to 59 mm of crack length per sq mm of sample surface; and (3) the fraction of sample surface area that is occupied by crack lines was determined and found to be in the 25 to 56 percent range. In addition, average crack width can be estimated from crack length and crack area measurements and was calculated to be about 10 mm. Among the parameters studied, the fraction of sample surface area that is occupied by crack lines is believed to be most useful in characterizing the degree of silicone conversion to silicates by AO because its value steadily increases with increasing fluence over the entire fluence range. A series of SEM images from the eight samples exposed to different AO fluences suggest a complex sequence of surface stress due to surface shrinkage and crack formation, followed by re-distribution of stress and shrinking rate on the sample surface. Energy dispersive spectra (EDS) indicated that upon AO exposure, carbon content on the surface decreased relatively quickly at the beginning, to 32 percent of the pristine value for the least exposed sample in this set of experiments (1.46 10(exp 21) atoms/sq cm), but then decreased slowly, to 22 percent of the pristine value for the most exposed sample in this set of experiment (8.43 10(exp 21) atoms/sq cm). The oxygen content appears to increase at a slower rate. The least and most AO exposed samples were, respectively, 52 and 150 percent above the pristine values. The silicone samples with the greater AO exposure (7.75 10(exp 21) atoms/sq cm and higher) appear to have a surface layer which contains SiO2 with perhaps small amounts of unreacted silicone, CO and CO2 sealed inside.

Silicon, endophytes and secondary metabolites as grass defenses against mammalian herbivores

PubMed Central

Huitu, Otso; Forbes, Kristian M.; Helander, Marjo; Julkunen-Tiitto, Riitta; Lambin, Xavier; Saikkonen, Kari; Stuart, Peter; Sulkama, Sini; Hartley, Sue

2014-01-01

Grasses have been considered to primarily employ tolerance in lieu of defense in mitigating damage caused by herbivory. Yet a number of mechanisms have been identified in grasses, which may deter feeding by grazers. These include enhanced silicon uptake, hosting of toxin-producing endophytic fungi and induction of secondary metabolites. While these mechanisms have been individually studied, their synergistic responses to grazing, as well as their effects on grazers, are poorly known. A field experiment was carried out in 5 × 5 m outdoor enclosures to quantify phytochemical changes of either endophyte-infected (E+) or endophyte-free (E-) meadow fescue (Schedonorus pratensis) in response to medium intensity (corresponding with densities of ca. 1200 voles/ha for 5 weeks during 3 months) or heavy intensity (ca. 1200 voles/ha for 8 weeks during 3 months) grazing by a mammalian herbivore, the field vole (Microtus agrestis). A laboratory experiment was then conducted to evaluate the effects of endophyte infection status and grazing history of the grass diet on vole performance. As predicted, grazing increased foliar silicon content, by up to 13%. Grazing also increased foliar levels of phosphorous and several phenolic compounds, most notably those of the flavonols isorhamnetin-diglycoside and rhamnetin derivative. Silicon concentrations were consistently circa 16% higher in E+ grasses than in E-grasses, at all levels of grazing. Similarly, concentrations of chlorogenic acid derivative were found to be consistently higher in E+ than in E- grasses. Female voles maintained on heavily grazed grasses suffered higher mortality rates in the laboratory than female voles fed ungrazed grass, regardless of endophyte infection status. Our results conclusively demonstrate that, in addition to tolerance, grasses employ multi-tiered, effective defenses against mammalian grazers. PMID:25278951

Photoluminescence of Er-doped silicon-rich oxide thin films with high Al concentrations

NASA Astrophysics Data System (ADS)

Rozo, Carlos; Fonseca, Luis F.; Jaque, Daniel; García Solé, José

Er-doped silicon-rich oxide (SRO) thin films co-doped with Al in high concentrations were prepared by sputtering. Some films were deposited using a substrate heater (150 °C

Compact chromium oxide thin film resistors for use in nanoscale quantum circuits

DOE Office of Scientific and Technical Information (OSTI.GOV)

Nash, C. R.; Fenton, J. C.; Constantino, N. G. N.

We report on the electrical characterisation of a series of thin amorphous chromium oxide (CrO{sub x}) films, grown by dc sputtering, to evaluate their suitability for use as on-chip resistors in nanoelectronics. By increasing the level of oxygen doping, the room-temperature sheet resistance of the CrO{sub x} films was varied from 28 Ω/◻ to 32.6 kΩ/◻. The variation in resistance with cooling to 4.2 K in liquid helium was investigated; the sheet resistance at 4.2 K varied with composition from 65 Ω/◻ to above 20 GΩ/◻. All of the films measured displayed linear current–voltage characteristics at all measured temperatures. For on-chip devices for quantummore » phase-slip measurements using niobium–silicon nanowires, interfaces between niobium–silicon and chromium oxide are required. We also characterised the contact resistance for one CrO{sub x} composition at an interface with niobium–silicon. We found that a gold intermediate layer is favourable: the specific contact resistivity of chromium-oxide-to-gold interfaces was 0.14 mΩcm{sup 2}, much lower than the value for direct CrO{sub x} to niobium–silicon contact. We conclude that these chromium oxide films are suitable for use in nanoscale circuits as high-value resistors, with resistivity tunable by oxygen content.« less

Effect of Trace Levels of Si on Microstructure and Grain Boundary Segregation in DOP-26 Iridium Alloy

NASA Astrophysics Data System (ADS)

Pierce, Dean; Muralidharan, Govindarajan; Heatherly, Lee; Fox, Ethan

2018-03-01

The thermodynamics and kinetics of Silicon (Si) segregation to grain boundaries in Iridium alloy DOP-26 with added trace levels of Si of 6, 11, 29, and 36 wppm was studied by Auger Electron Spectroscopy. The four alloys were annealed at 1500 or 1535 °C for 19 or 76 hours followed by cooling at three different rates. Si enrichment at the grain boundaries (GB) increased with increasing bulk Si content, with the grain boundary Si enrichment factors ranging from 62 to 344, depending on the bulk Si content and the cooling rate. Grain boundary Si contents increased with decreasing cooling rate in all alloys, indicating that Si GB segregation is influenced by both thermodynamic and kinetic factors in the alloys and temperature ranges of the study. A Langmuir-McLean isotherm-based model was successfully used to predict the temperature dependence of GB Si segregation in DOP-26 alloys with Si additions and estimate the temperature independent free energy of Si segregation to grain boundaries in DOP-26.

Formation of copper precipitates in silicon

NASA Astrophysics Data System (ADS)

Flink, Christoph; Feick, Henning; McHugo, Scott A.; Mohammed, Amna; Seifert, Winfried; Hieslmair, Henry; Heiser, Thomas; Istratov, Andrei A.; Weber, Eicke R.

1999-12-01

The formation of copper precipitates in silicon was studied after high-temperature intentional contamination of p- and n-type FZ and Cz-grown silicon and quench to room temperature. With the Transient Ion Drift (TID) technique on p-type silicon a critical Fermi level position at EC-0.2 eV was found. Only if the Fermi level position, which is determined by the concentrations of the acceptors and the copper donors, surpasses this critical value precipitation takes place. If the Fermi level is below this level the supersaturated interstitial copper diffuses out. An electrostatic precipitation model is introduced that correlates the observed precipitation behavior with the electrical activity of the copper precipitates as detected with Deep Level Transient Spectroscopy (DLTS) on n-type and with Minority Carrier Transient Spectroscopy (MCTS) on p-type silicon.

Effects of processing and dopant on radiation damage removal in silicon solar cells

NASA Technical Reports Server (NTRS)

Weinberg, I.; Brandhorst, H. W., Jr.; Swartz, C. K.; Mehta, S.

1982-01-01

Gallium and boron doped silicon solar cells, processed by ion-implantation followed by either laser or furnace anneal were irradiated by 1 MeV electrons and their post-irradiation recovery by thermal annealing determined. During the post-irradiation anneal, gallium-doped cells prepared by both processes recovered more rapidly and exhibited none of the severe reverse annealing observed for similarly processed 2 ohm-cm boron doped cells. Ion-implanted furnace annealed 0.1 ohm-cm boron doped cells exhibited the lowest post-irradiation annealing temperatures (200 C) after irradiation to 5 x 10 to the 13th e(-)/sq cm. The drastically lowered recovery temperature is attributed to the reduced oxygen and carbon content of the 0.1 ohm-cm cells. Analysis based on defect properties and annealing kinetics indicates that further reduction in annealing temperature should be attainable with further reduction in the silicon's carbon and/or divacancy content after irradiation.

Scaling effects in sodium zirconium silicate phosphate (Na 1+ xZr 2Si xP 3- xO 12) ion-conducting thin films

DOE PAGES

Ihlefeld, Jon F.; Gurniak, Emily; Jones, Brad H.; ...

2016-05-04

Preparation of sodium zirconium silicate phosphate (NaSICon), Na 1+xZr 2Si xP 3–xO 12 (0.25 ≤ x ≤ 1.0), thin films has been investigated via a chemical solution approach on platinized silicon substrates. Increasing the silicon content resulted in a reduction in the crystallite size and a reduction in the measured ionic conductivity. Processing temperature was also found to affect microstructure and ionic conductivity with higher processing temperatures resulting in larger crystallite sizes and higher ionic conductivities. The highest room temperature sodium ion conductivity was measured for an x = 0.25 composition at 2.3 × 10 –5 S/cm. In conclusion, themore » decreasing ionic conductivity trends with increasing silicon content and decreasing processing temperature are consistent with grain boundary and defect scattering of conducting ions.« less

Biomonitoring of Urban Pollution Using Silicon-Accumulating Species, Phyllostachys aureosulcata 'Aureocaulis'.

PubMed

Morina, Filis; Vidović, Marija; Srećković, Tatjana; Radović, Vesela; Veljović-Jovanović, Sonja

2017-12-01

We investigated metal accumulation in bamboo leaves during three seasons at three urban locations differing in pollution levels. The higher content of Cu, Pb, and Zn in the leaves was in correlation with the highest bioavailable content of these elements in the soil at the most polluted location. The content of leaf trace elements was higher in summer and autumn compared to spring. Scanning electron microscopy with energy dispersive X-ray spectroscopy showed that Si accumulation in bamboo leaves was the highest in epidermis and vascular tissue, and was co-localized with trace metals. Analysis of phytoliths showed co-deposition of Al, C, and Si, implying the involvement of Si in metal detoxification. Compared to a common urban tree, linden, bamboo showed better capacity to maintain cellular redox homeostasis under deteriorated environmental conditions. The results suggest that bamboo can be efficiently used for biomonitoring of air and soil metal pollution and remediation in urban areas.

Effect of titanium on the creep deformation behaviour of 14Cr-15Ni-Ti stainless steel

NASA Astrophysics Data System (ADS)

Latha, S.; Mathew, M. D.; Parameswaran, P.; Nandagopal, M.; Mannan, S. L.

2011-02-01

14Cr-15Ni-Ti modified stainless steel alloyed with additions of phosphorus and silicon is a potential candidate material for the future cores of Prototype Fast Breeder Reactor. In order to optimise the titanium content in this steel, creep tests have been conducted on the heats with different titanium contents of 0.18, 0.23, 0.25 and 0.36 wt.% at 973 K at various stress levels. The stress exponents indicated that the rate controlling deformation mechanism was dislocation creep. A peak in the variation of rupture life with titanium content was observed around 0.23 wt.% titanium and the peak was more pronounced at lower stresses. The variation in creep strength with titanium content was correlated with transmission electron microscopic investigations. The peak in creep strength exhibited by the material with 0.23 wt.% titanium is attributed to the higher volume fraction of fine secondary titanium carbide (TiC) precipitates.

Amorphous silicon carbide passivating layers for crystalline-silicon-based heterojunction solar cells

DOE Office of Scientific and Technical Information (OSTI.GOV)

Boccard, Mathieu; Holman, Zachary C.

Amorphous silicon enables the fabrication of very high-efficiency crystalline-silicon-based solar cells due to its combination of excellent passivation of the crystalline silicon surface and permeability to electrical charges. Yet, amongst other limitations, the passivation it provides degrades upon high-temperature processes, limiting possible post-deposition fabrication possibilities (e.g., forcing the use of low-temperature silver pastes). We investigate the potential use of intrinsic amorphous silicon carbide passivating layers to sidestep this issue. The passivation obtained using device-relevant stacks of intrinsic amorphous silicon carbide with various carbon contents and doped amorphous silicon are evaluated, and their stability upon annealing assessed, amorphous silicon carbide beingmore » shown to surpass amorphous silicon for temperatures above 300 °C. We demonstrate open-circuit voltage values over 700 mV for complete cells, and an improved temperature stability for the open-circuit voltage. Transport of electrons and holes across the hetero-interface is studied with complete cells having amorphous silicon carbide either on the hole-extracting side or on the electron-extracting side, and a better transport of holes than of electrons is shown. Also, due to slightly improved transparency, complete solar cells using an amorphous silicon carbide passivation layer on the hole-collecting side are demonstrated to show slightly better performances even prior to annealing than obtained with a standard amorphous silicon layer.« less

Amorphous silicon carbide passivating layers for crystalline-silicon-based heterojunction solar cells

DOE Office of Scientific and Technical Information (OSTI.GOV)

Boccard, Mathieu; Holman, Zachary C.

With this study, amorphous silicon enables the fabrication of very high-efficiency crystalline-silicon-based solar cells due to its combination of excellent passivation of the crystalline silicon surface and permeability to electrical charges. Yet, amongst other limitations, the passivation it provides degrades upon high-temperature processes, limiting possible post-deposition fabrication possibilities (e.g., forcing the use of low-temperature silver pastes). We investigate the potential use of intrinsic amorphous silicon carbide passivating layers to sidestep this issue. The passivation obtained using device-relevant stacks of intrinsic amorphous silicon carbide with various carbon contents and doped amorphous silicon are evaluated, and their stability upon annealing assessed, amorphousmore » silicon carbide being shown to surpass amorphous silicon for temperatures above 300°C. We demonstrate open-circuit voltage values over 700 mV for complete cells, and an improved temperature stability for the open-circuit voltage. Transport of electrons and holes across the hetero-interface is studied with complete cells having amorphous silicon carbide either on the hole-extracting side or on the electron-extracting side, and a better transport of holes than of electrons is shown. Also, due to slightly improved transparency, complete solar cells using an amorphous silicon carbide passivation layer on the hole-collecting side are demonstrated to show slightly better performances even prior to annealing than obtained with a standard amorphous silicon layer.« less

Amorphous silicon carbide passivating layers for crystalline-silicon-based heterojunction solar cells

DOE PAGES

Boccard, Mathieu; Holman, Zachary C.

2015-08-14

With this study, amorphous silicon enables the fabrication of very high-efficiency crystalline-silicon-based solar cells due to its combination of excellent passivation of the crystalline silicon surface and permeability to electrical charges. Yet, amongst other limitations, the passivation it provides degrades upon high-temperature processes, limiting possible post-deposition fabrication possibilities (e.g., forcing the use of low-temperature silver pastes). We investigate the potential use of intrinsic amorphous silicon carbide passivating layers to sidestep this issue. The passivation obtained using device-relevant stacks of intrinsic amorphous silicon carbide with various carbon contents and doped amorphous silicon are evaluated, and their stability upon annealing assessed, amorphousmore » silicon carbide being shown to surpass amorphous silicon for temperatures above 300°C. We demonstrate open-circuit voltage values over 700 mV for complete cells, and an improved temperature stability for the open-circuit voltage. Transport of electrons and holes across the hetero-interface is studied with complete cells having amorphous silicon carbide either on the hole-extracting side or on the electron-extracting side, and a better transport of holes than of electrons is shown. Also, due to slightly improved transparency, complete solar cells using an amorphous silicon carbide passivation layer on the hole-collecting side are demonstrated to show slightly better performances even prior to annealing than obtained with a standard amorphous silicon layer.« less

Optimization of the bake-on siliconization of cartridges. Part II: Investigations into burn-in time and temperature.

PubMed

Funke, Stefanie; Matilainen, Julia; Nalenz, Heiko; Bechtold-Peters, Karoline; Mahler, Hanns-Christian; Vetter, Florian; Müller, Christoph; Bracher, Franz; Friess, Wolfgang

2016-08-01

Combination products have become popular formats for the delivery of parenteral medications. Bake-on siliconization of glass syringes or cartridges allows good piston break-loose and gliding during injection at low silicone levels. Although widely implemented in industry, still little is known and published on the effect of the bake-on process on the silicone level, layer thickness and chemical composition. In this study, cartridges were bake-on siliconized in a heat-tunnel by varying both temperature from 200 to 350°C for 12min and time from 5min to 3h at 316°C. Furthermore, a heat-oven with air-exchange was established as an experimental model. Heat treatment led to a time- and temperature-dependent decrease in the silicone level and layer thickness. After 1h at 316°C lubrication was insufficient. The silicone levels substantially decreased between 250 and 316°C after 12min. After bake-on, the peak molecular weight of the silicone remained unchanged while fractions below 5000g/mol were removed at 316 and 350°C. Cyclic low molecular weight siloxanes below 500g/mol were volatilized under all conditions. Despite most of the baked-on silicone was solvent-extractable, contact angle analysis indicated a strong binding of a remaining, thin silicone film to the glass surface. Copyright © 2016 Elsevier B.V. All rights reserved.

Energy Levels of Defects Created in Silicon Supersaturated with Transition Metals

NASA Astrophysics Data System (ADS)

García, H.; Castán, H.; Dueñas, S.; García-Hemme, E.; García-Hernansaz, R.; Montero, D.; González-Díaz, G.

2018-03-01

Intermediate-band semiconductors have attracted much attention for use in silicon-based solar cells and infrared detectors. In this work, n-Si substrates have been implanted with very high doses (1013 cm-2 and 1014 cm-2) of vanadium, which gives rise to a supersaturated layer inside the semiconductor. However, the Mott limit was not exceeded. The energy levels created in the supersaturated silicon were studied in detail by means of thermal admittance spectroscopy. We found a single deep center at energy near E C - 200 meV. This value agrees with one of the levels found for vanadium in silicon. The capture cross-section values of the deep levels were also calculated, and we found a relationship between the capture cross-section and the energy position of the deep levels which follows the Meyer-Neldel rule. This process usually appears in processes involving multiple excitations. The Meyer-Neldel energy values agree with those previously obtained for silicon supersaturated with titanium and for silicon contaminated with iron.

A spectroscopy-based detector to monitor tomato growth condition in greenhouse

NASA Astrophysics Data System (ADS)

Yang, Ce; Li, Minzan; Cui, Di

2008-12-01

A spectroscopy-based detector is developed to measure the nitrogen and chlorophyll content of tomato leaves and then to predict the growth condition of tomato plants in greenhouse. The detector uses two wavebands, 527 nm and 762 nm, since it is proved that these wavebands are sensitive to nitrogen and chlorophyll content in plant leaves by previous field test. The detector contains: A Y-type optic fiber, two silicon photocells, a signal processing unit, and a MCU. Light reflection from tomato leaves is transmitted by the Y-type optic fiber to the surface of the silicon photo cells, which transfer optical signal into electrical signal. Then the analog signal is amplified to conform to the TTL level signal standard and finally converted to digital signal by MAX186. After that, the MCU carries on a series of actions, including data calculating, displaying and storage. Using the measured data, the Normalized Difference Vegetation Index (NDVI) is calculated to estimate the nitrogen and chlorophyll content in plant leaves. The result is directly displayed on an LCD screen. Users have an option in saving data, either into a USB-memory stick or into a database over the PC serial port. The detector is portable, inexpensive, and convenient, which make it meet farmers' need in China. The performance test shows that the growth model works very well, and the device has high accuracy in predicting the growth condition of tomato plants in greenhouse.

Damage coefficients in low resistivity silicon. [solar cells

NASA Technical Reports Server (NTRS)

Srour, J. R.; Othmer, S.; Chiu, K. Y.; Curtis, O. L., Jr.

1975-01-01

Electron and proton damage coefficients are determined for low resistivity silicon based on minority-carrier lifetime measurements on bulk material and diffusion length measurements on solar cells. Irradiations were performed on bulk samples and cells fabricated from four types of boron-doped 0.1 ohm-cm silicon ingots, including the four possible combinations of high and low oxygen content and high and low dislocation density. Measurements were also made on higher resistivity boron-doped bulk samples and solar cells. Major observations and conclusions from the investigation are discussed.

Thermal load leveling during silicon crystal growth from a melt using anisotropic materials

DOEpatents

Carlson, Frederick M.; Helenbrook, Brian T.

2016-10-11

An apparatus for growing a silicon crystal substrate comprising a heat source, an anisotropic thermal load leveling component, a crucible, and a cold plate component is disclosed. The anisotropic thermal load leveling component possesses a high thermal conductivity and may be positioned atop the heat source to be operative to even-out temperature and heat flux variations emanating from the heat source. The crucible may be operative to contain molten silicon in which the top surface of the molten silicon may be defined as a growth interface. The crucible may be substantially surrounded by the anisotropic thermal load leveling component. The cold plate component may be positioned above the crucible to be operative with the anisotropic thermal load leveling component and heat source to maintain a uniform heat flux at the growth surface of the molten silicon.

A "Sticky" Mucin-Inspired DNA-Polysaccharide Binder for Silicon and Silicon-Graphite Blended Anodes in Lithium-Ion Batteries.

PubMed

Kim, Sunjin; Jeong, You Kyeong; Wang, Younseon; Lee, Haeshin; Choi, Jang Wook

2018-05-14

New binder concepts have lately demonstrated improvements in the cycle life of high-capacity silicon anodes. Those binder designs adopt adhesive functional groups to enhance affinity with silicon particles and 3D network conformation to secure electrode integrity. However, homogeneous distribution of silicon particles in the presence of a substantial volumetric content of carbonaceous components (i.e., conductive agent, graphite, etc.) is still difficult to achieve while the binder maintains its desired 3D network. Inspired by mucin, the amphiphilic macromolecular lubricant, secreted on the hydrophobic surface of gastrointestine to interface aqueous serous fluid, here, a renatured DNA-alginate amphiphilic binder for silicon and silicon-graphite blended electrodes is reported. Mimicking mucin's structure comprised of a hydrophobic protein backbone and hydrophilic oligosaccharide branches, the renatured DNA-alginate binder offers amphiphilicity from both components, along with a 3D fractal network structure. The DNA-alginate binder facilitates homogeneous distribution of electrode components in the electrode as well as its enhanced adhesion onto a current collector, leading to improved cyclability in both silicon and silicon-graphite blended electrodes. © 2018 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Silicon alleviates Cd stress of wheat seedlings (Triticum turgidum L. cv. Claudio) grown in hydroponics.

PubMed

Rizwan, M; Meunier, J-D; Davidian, J-C; Pokrovsky, O S; Bovet, N; Keller, C

2016-01-01

We investigated the potential role of silicon in improving tolerance and decreasing cadmium (Cd) toxicity in durum wheat (Triticum turgidum L. durum) either through a reduced Cd uptake or exclusion/sequestration in non-metabolic tissues. For this, plants were grown in hydroponic conditions for 10 days either in presence or absence of 1 mM Si and for 11 additional days in various Cd concentrations (0, 0.5, 5.0 and 50 μM). After harvesting, morphological and physiological parameters as well as elemental concentrations were recorded. Cadmium caused reduction in growth parameters, photosynthetic pigments and mineral nutrient concentrations both in shoots and roots. Shoot and root contents of malate, citrate and aconitate increased, while contents of phosphate, nitrate and sulphate decreased with increasing Cd concentrations in plants. Addition of Si to the nutrient solution mitigated these adverse effects: Cd concentration in shoots decreased while concentration of Cd adsorbed at the root cell apoplasmic level increased together with Zn uptake by roots. Overall, total Cd uptake decreased in presence of Si. There was no co-localisation of Cd and Si either at the shoot or at the root levels. No Cd was detected in leaf phytoliths. In roots, Cd was mainly detected in the cortical parenchyma and Si at the endodermis level, while analysis of the outer thin root surface of the plants grown in the 50 μM Cd + 1 mM Si treatment highlighted non-homogeneous Cd and Si enrichments. These data strongly suggest the existence of a root localised protection mechanism consisting in armoring the root surface by Si- and Cd-bearing compounds and in limiting root-shoot translocation.

Microscopic mechanism of amino silicone oil modification and modification effect with different amino group contents based on molecular dynamics simulation

NASA Astrophysics Data System (ADS)

He, Liping; Li, Wenjun; Chen, Dachuan; Yuan, Jianmin; Lu, Gang; Zhou, Dianwu

2018-05-01

The microscopic mechanism of amino silicone oil (ASO) modification of natural fiber was investigated for the first time using molecular dynamics (MD) simulation at the atomic and molecular levels. The MD simulation results indicated that the ASO molecular interacted with the cellulose molecular within the natural fiber, mainly by intermolecular forces of Nsbnd Hsbnd O and Osbnd Hsbnd N hydrogen bonds and the molecular chain of ASO absorbed onto the natural fiber in a selective orientation, i.e., the hydrophobic alkyl groups (sbnd CnH2n+1) project outward and the polar amino groups (sbnd NH2) point to the surface of natural fiber. Consequently, the ASO modification changed the surface characteristic of natural fiber from hydrophilic to hydrophobic. Furthermore, the modification effects of the ASO modification layer with different amino group contents (m:n ratio) were also evaluated in this study by calculating the binding energy between the ASO modifier and natural fiber, and the cohesive energy density and free volume of the ASO modification layer. The results showed that the binding energy reached a maximum when the m:n ratio of ASO was of 8:4, suggesting that a good bonding strength was achieved at this m:n ratio. It was also found that the cohesive energy density enhanced with the increase in the amino group content, and the higher the cohesive energy density, the easier the formation of the ASO modification layer. However, the fraction free volume decreased with the increase in the amino group content. This is good for improving the water-proof property of natural fiber. The present work can provide an effective method for predicting the modification effects and designing the optimized m:n ratio of ASO modification.

Capabilities of ICP-RIE cryogenic dry etching of silicon: review of exemplary microstructures

NASA Astrophysics Data System (ADS)

Sökmen, Ü.; Stranz, A.; Fündling, S.; Wehmann, H.-H.; Bandalo, V.; Bora, A.; Tornow, M.; Waag, A.; Peiner, E.

2009-10-01

Inductively coupled plasma (ICP) cryogenic dry etching was used to etch submicron pores, nano contact lines, submicron diameter pillars, thin and thick cantilevers, membrane structures and anisotropic deep structures with high aspect ratios in silicon for bio-nanoelectronics, optoelectronics and nano-micro electromechanical systems (NMEMS). The ICP cryogenic dry etching gives us the advantage of switching plasmas between etch rates of 13 nm min-1 and 4 µm min-1 for submicron pores and for membrane structures, respectively. A very thin photoresist mask can endure at -75 °C even during etching 70 µm deep for cantilevers and 300 µm deep for membrane structures. Coating the backsides of silicon membrane substrates with a thin photoresist film inhibited the lateral etching of cantilevers during their front release. Between -95 °C and -140 °C, we realized crystallographic-plane-dependent etching that creates facets only at the etch profile bottom. By varying the oxygen content and the process temperature, we achieved good control over the shape of the etched structures. The formation of black silicon during membrane etching down to 300 µm was delayed by reducing the oxygen content.

Lunar rocks as a source of oxygen

NASA Technical Reports Server (NTRS)

Poole, H. G.

1963-01-01

A thermodynamic study of the thermal stability of conventional terrestrial minerals in a hypothetical lunar atmosphere has opened some interesting speculation. Much of the Earth's crust is composed of oxides of silicon, aluminum, magnesium, and related compounds. These crust components may be as much a product of the Earth's atmosphere as vegetation and animal life. Though inanimate and long considered imperishable, these materials are stable under conditions of an atmosphere equivalent to 34 ft of water at sea level and persist under adverse conditions of moisture and temperature to altitudes of roughly 29,000 ft above sea level. The oxygen content averages 21% ) and the oxygen partial pressure would be roughly 1/5 atm.

[The assessment of the quality of water from sources of decentralized water supply of Ekaterinburg and surrounding areas].

PubMed

Konshina, Lidia G

2016-01-01

The availability of high-quality drinking water is currently the one out of the most acute problems in the Russian Federation. There was performed an analysis of the chemical composition of drinking water from sources of decentralized supply of inhabitants of the city of Yekaterinburg and the surrounding areas. Average values of indices of the water quality in the wells for individual use in the district of the city of Yekaterinburg not go beyond the standards, with the exception of manganese content. In some sources there were revealed elevated values of chromatic level, oxidability, hardness, content of iron, nitrates, barium, dry residue, ammonium nitrogen, silicon. Percentage of sources that do not meet hygienic requirements on a number of indices can reach 21-23%.

Silicon availability modifies nutrient use efficiency and content, C:N:P stoichiometry, and productivity of winter wheat (Triticum aestivum L.)

NASA Astrophysics Data System (ADS)

Neu, Silke; Schaller, Jörg; Dudel, E. Gert

2017-01-01

Silicon (Si) is known as beneficial element for graminaceous plants. The importance of Si for plant functioning of cereals was recently emphasized. However, about the effect of Si availability on biomass production, grain yield, nutrient status and nutrient use efficiency for wheat (Triticum aestivum L.), as one of the most important crop plants worldwide, less is known so far. Consequently, we assessed the effect of a broad range of supply levels of amorphous SiO2 on wheat plant performance. Our results revealed that Si is readily taken up and accumulated basically in aboveground vegetative organs. Carbon (C) and phosphorus (P) status of plants were altered in response to varying Si supply. In bulk straw biomass C concentration decreased with increasing Si supply, while P concentration increased from slight limitation towards optimal nutrition. Thereby, aboveground biomass production increased at low to medium supply levels of silica whereas grain yield increased at medium supply level only. Nutrient use efficiency was improved by Si insofar that biomass production was enhanced at constant nitrogen (N) status of substrate and plants. Consequently, our findings imply fundamental influences of Si on C turnover, P availability and nitrogen use efficiency for wheat as a major staple crop.

A metallurgical route to solar-grade silicon

NASA Technical Reports Server (NTRS)

Schei, A.

1986-01-01

The aim of the process is to produce silicon for crystallization into ingots that can be sliced to wafers for processing into photovoltaic cells. If the potential purity can be realized, the silicon will also be applicable for ribbon pulling techniques where the purification during crystallization is negligible. The process consists of several steps: selection and purification of raw materials, carbothermic reduction of silica, ladle treatment, casting, crushing, leaching, and melting. The leaching step is crucial for high purity, and the obtainable purity is determined by the solidification before leaching. The most difficult specifications to fulfill are the low contents of boron, phosphorus, and carbon. Boron and phosphorus can be excluded from the raw materials, but the carbothermic reduction will unavoidably saturate the silicon with carbon at high temperature. During cooling carbon will precipitate as silicon carbide crystals, which will be harmful in solar cells. The cost of this solar silicon will depend strongly on the scale of production. It is as yet premature to give exact figures, but with a scale of some thousand tons per year, the cost will only be a few times the cost of ordinary metallurgical silicon.

Fibers based on polyethylene with silicon and silicon carbide nanoparticles

NASA Astrophysics Data System (ADS)

Olkhov, A. A.; Krutikova, A. A.; Kovaleva, A. N.; Rychagov, O. V.; Ischenko, A. A.

2017-12-01

In the paper, fibrous materials based on polyethylene with nanosized silicon and silicon carbide obtained by the plasma chemical method have been obtained. The concentration of nanosilicon nanoparticles was 0.1-1.5%. Fibers absorb UV radiation in the range 200-400 nm. The size of silicon nanoparticles and dispersion in fibers are estimated by X-ray diffraction. It is shown that silicon nanoparticles exert no effect on the formation of the internal structure of the PE matrix. The degree of crystallinity, melting and crystallization temperatures remain constant. The surface properties of films are investigated by triboelectric methods and by determining the wetting angle. The surface properties of composite films do not differ from the properties of PE films with the concentration of nanoparticles from 0.1 to 1.0%. At a 1.5% content of n-SiC, the microrelief of the surface changes, and the friction coefficient of the films increases. The resulting films are recommended for application as a UV protective coating.

Improved scar appearance with combined use of silicone gel and vitamin C for Asian patients: a comparative case series.

PubMed

Yun, In Sik; Yoo, Han-Su; Kim, Yong Oock; Rah, Dong Kyun

2013-12-01

In Asians, facial scars, even fine surgical scars, often can be conspicuous and uncomfortable. The authors used a topical silicone gel containing vitamin C on facial scars for the purpose of making the scar less distinct. The study enrolled 80 patients. For the experimental group, the topical silicone gel mixture containing vitamin C was applied from the time of stitch removal to 6 months after the operation. The control group did not undergo any adjunctive treatment. Each participant was evaluated using the modified Vancouver Scar Scale (VSS) as well as erythema and melanin indices by spectrophotometer. With the modified VSS, the experimental group showed a significant decrease in scar elevation (p = 0.026) and erythema (p = 0.025). The hypo- or hyperpigmentation of the scars was more normalized in the experimental group. In the measured results via spectrophotometer, the experimental group showed a significant decrease in the melanin index (p = 0.045). The erythema index showed a statistically significant difference between the time of stitch removal and 6 months after the operation in the experiment group only. Topical use of silicone gel containing vitamin C has the effect of improving the appearance of fine surgical scars in Asian facial skin. This journal requires that authors assign a level of evidence to each article. For a full description of these Evidence-Based Medicine ratings, please refer to the Table of Contents or the online Instructions to Authors www.springer.com/00266 .

Friction and wear with a single-crystal abrasive grit of silicon carbide in contact with iron base binary alloys in oil: Effects of alloying element and its content

NASA Technical Reports Server (NTRS)

Miyoshi, K.; Buckley, D. H.

1979-01-01

Sliding friction experiments were conducted with various iron-base binary alloys (alloying elements were Ti, Cr, Mn, Ni, Rh, and W) in contact with a rider of 0.025-millimeter-radius, single-crystal silicon carbide in mineral oil. Results indicate that atomic size and content of alloying element play a dominant role in controlling the abrasive-wear and -friction properties of iron-base binary alloys. The coefficient of friction and groove height (wear volume) general alloy decrease, and the contact pressure increases in solute content. There appears to be very good correlation of the solute to iron atomic radius ratio with the decreasing rate of coefficient of friction, the decreasing rate of groove height (wear volume), and the increasing rate of contact pressure with increasing solute content C. Those rates increase as the solute to iron atomic radius ratio increases from unity.

Investigation the electroplating behavior of self formed CuMn barrier.

PubMed

Wu, Chia-Yang; Lee, Wen-Hsi; Chang, Shih-Chieh; Wang, Ying-Lang

2013-08-01

The electrical and material properties of Copper (Cu) mixed with [0-10 atomic% manganese (Mn)] and pure Cu films deposited on silicon oxide (SiO2)/silicon (Si) are explored. Cu electroplating on self formed CuMn barrier was investigated with different Mn content. The electrochemical deposition of the Cu thin film onto the electrode using CuMn barrier was investigated. Scanning electron microscopic (SEM) micrographs of copper electroplating on CuMn films were examined, and the copper nucleation behaviors changed with the Mn content. Since the electrochemical impedance spectroscopy (EIS) is widely recognized as a powerful tool for the investigation of electrochemical behaviors, the tool was also used to verify the phenomena during plating. It was found that the charge-trasfer impedance decrease with the rise in the Mn content below 5%, but increase with the rise in the Mn content higher than 5%. The result was corresponded to the surface energy, the surface morphology, the corrosion and the oxidation of the substrate.

[Effects of Rice Cultivar and Typical Soil Improvement Measures on the Uptake of Cd in Rice Grains].

PubMed

Wang, Mei-e; Peng, Chi; Chen, Wei-ping

2015-11-01

Cadmium pollution of rice is a big problem in agricultural food safety. The accident "Cd rice" occurred last year in Youxian County, Hunan Province caused serious social panic. In this study, trials on "Cd rice" controlling techniques specific to the Cd pollution in paddy soil in Youxian were investigated. It was suggested that the average Cd contents in rice grains of the rice variety "Zhu Liang You 06" in Datongqiao and Wangling were 0.167 and 0.127 mg x kg(-1), respectively, which were only equal to 20% of the contents of other varieties. The trials for stabilizing agents revealed that treatments of lime and mineral fertilizer decreased Cd contents in rice grains to 20-30% of the control. Plastic film-mulched treatment decreased the rice grain Cd to 50%. And combined treatment of plastic film-mulched and biochar and silicon foliar-fertilizer decreased 80% of rice Cd content. Single treatments of silicon foliar-fertilizer and combined treatment of silicon foliar-fertilizer and topdressing fertilizer decreased more than 90% of Cd content. Results of BCR revealed that the percentage of cationic exchangeable and/or carbonate associated Cd fraction was more than 55% for most of the soil samples. Lime treatment significantly decreased the percentage of cationic exchangeable and/or carbonate and oxides of Fe and Mn associated Cd and increased the crystalline structure of clay minerals associated Cd. The change rate reached about 20%. Our results suggested concentration of soil Cd and pH were the two significant factors impacting the uptake of Cd by rice grains.

Analysis of particulate contaminations of infusion solutions in a pediatric intensive care unit.

PubMed

Jack, Thomas; Brent, Bernadette E; Boehne, Martin; Müller, Meike; Sewald, Katherina; Braun, Armin; Wessel, Armin; Sasse, Michael

2010-04-01

To examine the physical properties and chemical composition of particles captured by in-line microfilters in critically ill children, and to investigate the inflammatory and cytotoxic effects of particles on endothelial cells (HUVEC) and macrophages in vitro. Prospective, observational study of microfilters following their use in the pediatric intensive care unit. In vitro model utilizing cytokine assays to investigate the effects of particles on human endothelial cells and murine macrophages. Twenty filter membranes from nine patients and five controls were examined by electron microscopy (EM) and energy dispersion spectroscopy (EDX). The average number of particles found on the surface of the used membranes was 550 cm(2). EDX analysis confirmed silicon as a major particle constituent. Half of the filter membranes showed conglomerates containing an unaccountable number of smaller particles. In vitro, glass particles were used to mimic the high silicon content particles. HUVEC and murine macrophages were exposed to different contents of particles, and cytokine levels were assayed to assess their immune response. Levels of interleukin-1beta, interleukin-6, interleukin-8, and tumor necrosis factor alpha were suppressed. Particle contamination of infusion solutions exists despite a stringent infusion regiment. The number and composition of particles depends on the complexity of the applied admixtures. Beyond possible physical effects, the suppression of macrophage and endothelial cell cytokine secretion in vitro suggests that microparticle infusion in vivo may have immune-modulating effects. Further clinical trials are necessary to determine whether particle retention by in-line filtration has an influence on the outcome of intensive care patients.

Fabrication, characterization and testing of silicon photomultipliers for the Muon Portal Project

NASA Astrophysics Data System (ADS)

La Rocca, P.; Billotta, S.; Blancato, A. A.; Bonanno, D.; Bonanno, G.; Fallica, G.; Garozzo, S.; Lo Presti, D.; Marano, D.; Pugliatti, C.; Riggi, F.; Romeo, G.; Santagati, G.; Valvo, G.

2015-07-01

The Muon Portal is a recently started Project aiming at the construction of a large area tracking detector that exploits the muon tomography technique to inspect the contents of traveling cargo containers. The detection planes will be made of plastic scintillator strips with embedded wavelength-shifting fibres. Special designed silicon photomultipliers will read the scintillation light transported by the fibres along the strips and a dedicated electronics will combine signals from different strips to reduce the overall number of channels, without loss of information. Different silicon photomultiplier prototypes, both with the p-on-n and n-on-p technologies, have been produced by STMicroelectronics during the last years. In this paper we present the main characteristics of the silicon photomultipliers designed for the Muon Portal Project and describe the setup and the procedure implemented for the characterization of these devices, giving some statistical results obtained from the test of a first batch of silicon photomultipliers.

Antifuse with a single silicon-rich silicon nitride insulating layer

DOEpatents

Habermehl, Scott D.; Apodaca, Roger T.

2013-01-22

An antifuse is disclosed which has an electrically-insulating region sandwiched between two electrodes. The electrically-insulating region has a single layer of a non-hydrogenated silicon-rich (i.e. non-stoichiometric) silicon nitride SiN.sub.X with a nitrogen content X which is generally in the range of 0

Device for calorimetric measurement

DOEpatents

King, William P; Lee, Jungchul

2015-01-13

In one aspect, provided herein is a single crystal silicon microcalorimeter, for example useful for high temperature operation and long-term stability of calorimetric measurements. Microcalorimeters described herein include microcalorimeter embodiments having a suspended structure and comprising single crystal silicon. Also provided herein are methods for making calorimetric measurements, for example, on small quantities of materials or for determining the energy content of combustible material having an unknown composition.

Nanoporous Silicon Ignition of JA2 Propellant

DTIC Science & Technology

2014-06-01

signals that would satisfy the hazard of electromagnetic radiation to ordnance (HERO) requirements of modern munitions. Such integrated circuits can...NUMBER (Include area code) 410-278-6098 Standard Form 298 (Rev. 8/98) Prescribed by ANSI Std. Z39.18 iii Contents List of Figures iv 1...fabricated as an integral element of a silicon chip. Integrated circuits that filter the firing command signal could remove extraneous electromagnetic

Comparison analysis on the properties of the phosphor film according to the various composition ratio of phosphor slurry

NASA Astrophysics Data System (ADS)

Park, Jeong Yeon; Lee, Jeong Won; Heo, Young Moo; Won, Si Tae; Yoon, Gil Sang

2016-03-01

The conventional method of making a phosphor layer on the LED package by using a dispensing method is difficult to implement the specific color coordinate, color temperature and optical efficiency because the thickness of the phosphor layer is non-uniform due to precipitation of the phosphor. Besides, the dispensing method consume a large amount of phosphor and silicone to fill the LED package. Thus, studies that manufacture phosphor layer with a uniform thickness such as spray coating, screen printing, electrophoresis are active recently. The purpose of this study is to perform the basic research about the change of the characteristics of phosphor film that is molded with uniform thickness using the phosphor slurry according to various silicone resin and phosphor composition ratio. It is expected to be used as useful information for the fabricating properties when production environment of phosphor layer is changed dispensing method into phosphor film fabrication. In the experiment, it was selected three kinds of methyl-phenyl silicone based resin as the phosphor slurry constituents, and mixed with phosphor various amount of 20 ˜ 60wt% content per one silicone resin. Using this mixed phosphor slurry, it was molded the phosphor film with 300 μm thickness and analyzed the mechanical properties and optical properties of the phosphor film. Finally, the results of this study are presented below: (a) As the phenyl group content is increased, the total heat of reaction need to cure the silicone resin is decrease, and also lower the durometer hardness of the phosphor sheet. On the other hand, it was confirmed that there is no relationship between the phenyl group content in the phosphor film and optical characteristics of the phosphor film. (b) If the amount of the phosphor within the film are increased, then the values of shore hardness and CIE color coordinates are increased gradually but the value of CIE color temperature is decreased gradually in case of being applied same silicone resin to the phosphor film.

Silicon-Mediated Resistance in a Susceptible Rice Variety to the Rice Leaf Folder, Cnaphalocrocis medinalis Guenée (Lepidoptera: Pyralidae)

PubMed Central

Han, Yongqiang; Lei, Wenbin; Wen, Lizhang; Hou, Maolin

2015-01-01

The rice leaf folder, Cnaphalocrocis medinalis (Guenée), is one of the most destructive rice pests in Asian countries. Rice varieties resistant to the rice leaf folder are generally characterized by high silicon content. In this study, silicon amendment, at 0.16 and 0.32 g Si/kg soil, enhanced resistance of a susceptible rice variety to the rice leaf folder. Silicon addition to rice plants at both the low and high rates significantly extended larval development and reduced larval survival rate and pupation rate in the rice leaf folder. When applied at the high rate, silicon amendment reduced third-instars’ weight gain and pupal weight. Altogether, intrinsic rate of increase, finite rate of increase and net reproduction rate of the rice leaf folder population were all reduced at both the low and high silicon addition rates. Although the third instars consumed more in silicon-amended treatments, C:N ratio in rice leaves was significantly increased and food conversion efficiencies were reduced due to increased silicon concentration in rice leaves. Our results indicate that reduced food quality and food conversion efficiencies resulted from silicon addition account for the enhanced resistance in the susceptible rice variety to the rice leaf folder. PMID:25837635

Analysis of thin baked-on silicone layers by FTIR and 3D-Laser Scanning Microscopy.

PubMed

Funke, Stefanie; Matilainen, Julia; Nalenz, Heiko; Bechtold-Peters, Karoline; Mahler, Hanns-Christian; Friess, Wolfgang

2015-10-01

Pre-filled syringes (PFS) and auto-injection devices with cartridges are increasingly used for parenteral administration. To assure functionality, silicone oil is applied to the inner surface of the glass barrel. Silicone oil migration into the product can be minimized by applying a thin but sufficient layer of silicone oil emulsion followed by thermal bake-on versus spraying-on silicone oil. Silicone layers thicker than 100nm resulting from regular spray-on siliconization can be characterized using interferometric profilometers. However, the analysis of thin silicone layers generated by bake-on siliconization is more challenging. In this paper, we have evaluated Fourier transform infrared (FTIR) spectroscopy after solvent extraction and a new 3D-Laser Scanning Microscopy (3D-LSM) to overcome this challenge. A multi-step solvent extraction and subsequent FTIR spectroscopy enabled to quantify baked-on silicone levels as low as 21-325μg per 5mL cartridge. 3D-LSM was successfully established to visualize and measure baked-on silicone layers as thin as 10nm. 3D-LSM was additionally used to analyze the silicone oil distribution within cartridges at such low levels. Both methods provided new, highly valuable insights to characterize the siliconization after processing, in order to achieve functionality. Copyright © 2015 Elsevier B.V. All rights reserved.

Silicon alleviates drought stress of rice plants by improving plant water status, photosynthesis and mineral nutrient absorption.

PubMed

Chen, Wei; Yao, Xiaoqin; Cai, Kunzheng; Chen, Jining

2011-07-01

Drought is a major constraint for rice production in the rainfed lowlands in China. Silicon (Si) has been verified to play an important role in enhancing plant resistance to environmental stress. Two near-isogenic lines of rice (Oryza sativa L.), w-14 (drought susceptible) and w-20 (drought resistant), were selected to study the effects of exogenous Si application on the physiological traits and nutritional status of rice under drought stress. In wet conditions, Si supply had no effects on growth and physiological parameters of rice plants. Drought stress was found to reduce dry weight, root traits, water potential, photosynthetic parameters, basal quantum yield (F(v)/F(0)), and maximum quantum efficiency of PSII photochemistry (F(v)/F(m)) in rice plants, while Si application significantly increased photosynthetic rate (Pr), transpiration rate (Tr), F(v)/F(0), and F(v)/F(m) of rice plants under drought stress. In addition, water stress increased K, Na, Ca, Mg, Fe content of rice plants, but Si treatment significantly reduced these nutrient level. These results suggested that silicon application was useful to increase drought resistance of rice through the enhancement of photochemical efficiency and adjustment of the mineral nutrient absorption in rice plants.

Screening and Expression of a Silicon Transporter Gene (Lsi1) in Wild-Type Indica Rice Cultivars.

PubMed

Sahebi, Mahbod; Hanafi, Mohamed M; Rafii, M Y; Azizi, Parisa; Abiri, Rambod; Kalhori, Nahid; Atabaki, Narges

2017-01-01

Silicon (Si) is one of the most prevalent elements in the soil. It is beneficial for plant growth and development, and it contributes to plant defense against different stresses. The Lsi1 gene encodes a Si transporter that was identified in a mutant Japonica rice variety. This gene was not identified in fourteen Malaysian rice varieties during screening. Then, a mutant version of Lsi1 was substituted for the native version in the three most common Malaysian rice varieties, MR219, MR220, and MR276, to evaluate the function of the transgene. Real-time PCR was used to explore the differential expression of Lsi1 in the three transgenic rice varieties. Silicon concentrations in the roots and leaves of transgenic plants were significantly higher than in wild-type plants. Transgenic varieties showed significant increases in the activities of the enzymes SOD, POD, APX, and CAT; photosynthesis; and chlorophyll content; however, the highest chlorophyll A and B levels were observed in transgenic MR276. Transgenic varieties have shown a stronger root and leaf structure, as well as hairier roots, compared to the wild-type plants. This suggests that Lsi1 plays a key role in rice, increasing the absorption and accumulation of Si, then alters antioxidant activities, and improves morphological properties.

Screening and Expression of a Silicon Transporter Gene (Lsi1) in Wild-Type Indica Rice Cultivars

PubMed Central

Abiri, Rambod; Kalhori, Nahid; Atabaki, Narges

2017-01-01

Silicon (Si) is one of the most prevalent elements in the soil. It is beneficial for plant growth and development, and it contributes to plant defense against different stresses. The Lsi1 gene encodes a Si transporter that was identified in a mutant Japonica rice variety. This gene was not identified in fourteen Malaysian rice varieties during screening. Then, a mutant version of Lsi1 was substituted for the native version in the three most common Malaysian rice varieties, MR219, MR220, and MR276, to evaluate the function of the transgene. Real-time PCR was used to explore the differential expression of Lsi1 in the three transgenic rice varieties. Silicon concentrations in the roots and leaves of transgenic plants were significantly higher than in wild-type plants. Transgenic varieties showed significant increases in the activities of the enzymes SOD, POD, APX, and CAT; photosynthesis; and chlorophyll content; however, the highest chlorophyll A and B levels were observed in transgenic MR276. Transgenic varieties have shown a stronger root and leaf structure, as well as hairier roots, compared to the wild-type plants. This suggests that Lsi1 plays a key role in rice, increasing the absorption and accumulation of Si, then alters antioxidant activities, and improves morphological properties. PMID:28191468

Single-chip photonic transceiver based on bulk-silicon, as a chip-level photonic I/O platform for optical interconnects.

PubMed

Kim, Gyungock; Park, Hyundai; Joo, Jiho; Jang, Ki-Seok; Kwack, Myung-Joon; Kim, Sanghoon; Kim, In Gyoo; Oh, Jin Hyuk; Kim, Sun Ae; Park, Jaegyu; Kim, Sanggi

2015-06-10

When silicon photonic integrated circuits (PICs), defined for transmitting and receiving optical data, are successfully monolithic-integrated into major silicon electronic chips as chip-level optical I/Os (inputs/outputs), it will bring innovative changes in data computing and communications. Here, we propose new photonic integration scheme, a single-chip optical transceiver based on a monolithic-integrated vertical photonic I/O device set including light source on bulk-silicon. This scheme can solve the major issues which impede practical implementation of silicon-based chip-level optical interconnects. We demonstrated a prototype of a single-chip photonic transceiver with monolithic-integrated vertical-illumination type Ge-on-Si photodetectors and VCSELs-on-Si on the same bulk-silicon substrate operating up to 50 Gb/s and 20 Gb/s, respectively. The prototype realized 20 Gb/s low-power chip-level optical interconnects for λ ~ 850 nm between fabricated chips. This approach can have a significant impact on practical electronic-photonic integration in high performance computers (HPC), cpu-memory interface, hybrid memory cube, and LAN, SAN, data center and network applications.

A multispectral sorting device for isolating single wheat kernels with high protein content

USDA-ARS?s Scientific Manuscript database

Automated sorting of single wheat kernels according to protein content was demonstrated using two novel multispectral sorting devices with different spectral ranges; 470-1070 nm (silicone based detector) and 910nm-1550 nm (InGaAs based detector). The multispectral data were acquired by rapidly (~12...

Silicon Web Process Development. [for solar cell fabrication

NASA Technical Reports Server (NTRS)

Duncan, C. S.; Seidensticker, R. G.; Hopkins, R. H.; Mchugh, J. P.; Hill, F. E.; Heimlich, M. E.; Driggers, J. M.

1979-01-01

Silicon dendritic web, ribbon form of silicon and capable of fabrication into solar cells with greater than 15% AMl conversion efficiency, was produced from the melt without die shaping. Improvements were made both in the width of the web ribbons grown and in the techniques to replenish the liquid silicon as it is transformed to web. Through means of improved thermal shielding stress was reduced sufficiently so that web crystals nearly 4.5 cm wide were grown. The development of two subsystems, a silicon feeder and a melt level sensor, necessary to achieve an operational melt replenishment system, is described. A gas flow management technique is discussed and a laser reflection method to sense and control the melt level as silicon is replenished is examined.

Grinding Si3N4 Powder In Si3N4 Equipment

NASA Technical Reports Server (NTRS)

Herbell, Thomas P.; Freedman, Marc R.; Kiser, James D.

1989-01-01

Three methods of grinding compared. Report based on study of grinding silicon nitride powder in preparation for sintering into solid ceramic material. Attrition, vibratory, and ball mills lined with reaction-bonded silicon nitride tested. Rates of reduction of particle sizes and changes in chemical compositions of powders measured so grinding efficiences and increases in impurity contents from wear of mills and media evaluated for each technique.

Adjustable Lid Aids Silicon-Ribbon Growth

NASA Technical Reports Server (NTRS)

Mchugh, J. P.; Steidensticker, R. G.; Duncan, C. S.

1985-01-01

Closely-spaced crucible cover speeds up solidification. Growth rate of dendritic-web silicon ribbon from molten silicon increased by controlling distance between crucible susceptor lid and liquid/solid interface. Lid held in relatively high position when crucible newly filled with chunks of polycrystalline silicon. As silicon melts and forms pool of liquid at lower level, lid gradually lowered.

Influence of hydrogen effusion from hydrogenated silicon nitride layers on the regeneration of boron-oxygen related defects in crystalline silicon

DOE Office of Scientific and Technical Information (OSTI.GOV)

Wilking, S., E-mail: Svenja.Wilking@uni-konstanz.de; Ebert, S.; Herguth, A.

The degradation effect boron doped and oxygen-rich crystalline silicon materials suffer from under illumination can be neutralized in hydrogenated silicon by the application of a regeneration process consisting of a combination of slightly elevated temperature and carrier injection. In this paper, the influence of variations in short high temperature steps on the kinetics of the regeneration process is investigated. It is found that hotter and longer firing steps allowing an effective hydrogenation from a hydrogen-rich silicon nitride passivation layer result in an acceleration of the regeneration process. Additionally, a fast cool down from high temperature to around 550 °C seems tomore » be crucial for a fast regeneration process. It is suggested that high cooling rates suppress hydrogen effusion from the silicon bulk in a temperature range where the hydrogenated passivation layer cannot release hydrogen in considerable amounts. Thus, the hydrogen content of the silicon bulk after the complete high temperature step can be increased resulting in a faster regeneration process. Hence, the data presented here back up the theory that the regeneration process might be a hydrogen passivation of boron-oxygen related defects.« less

Anaesthetic uptake and washout characteristics of patient circuit tubing with special regard to current decontamination techniques.

PubMed

Gilly, H; Weindlmayr-Goettel, M; Köberl, G; Steinbereithner, K

1992-10-01

The amounts of halothane and isoflurane trapped after exposure for up to 3 h at 2 MAC in commonly used anaesthesia circuit tubing were quantitated by gas chromatography. The decontaminating effects of procedures such as flushing with oxygen, thermal disinfection and/or routine storage were assessed in a similar way. After halothane exposure, anaesthetic content was highest in silicone (398 +/- 55 mg 100 g-1). Lower quantities were found in all other tubings investigated (electrically conductive latex: 64 +/- 4, conductive rubber: 62 +/- 4, polyethylene-vinyl-acetate (PEVA): 293 +/- 10 and 149 +/- 17 for non-conductive corrugated and spiral tubes, respectively, polysulfone (Hytrel): 155 +/- 10 mg 100 g-1). The isoflurane contents were substantially lower (silicone: 278 +/- 23; others: 55 +/- 7, 61 +/- 6, 163 +/- 9 and 86 +/- 8, 74 +/- 4 mg 100 g-1). The tubings' content did not correlate with the material's partition coefficient as full saturation was not achieved during exposure. Decontamination procedures reduced the content of volatile anaesthetics to a variable extent. Conductive latex and rubber showed the highest residual content, even after thermal disinfection and subsequent storage. Twenty-minute flushing with oxygen (8 l min-1) decreased effluent gas concentrations below 5 p.p.m. in all tubings. With silicone, after 1 h flushing, halothane concentrations still exceeded 10 p.p.m. (isoflurane: 8 p.p.m.). It is concluded that urgent decontamination by a 20-min flush warrants the safe re-use of previously 'contaminated' conductive rubber and latex as well as polysulfone tubings in critical situations, e.g. in malignant hyperthermia patients if disposable tubing is not immediately available.(ABSTRACT TRUNCATED AT 250 WORDS)

A Heat and Mass Transfer Model of a Silicon Pilot Furnace

NASA Astrophysics Data System (ADS)

Sloman, Benjamin M.; Please, Colin P.; Van Gorder, Robert A.; Valderhaug, Aasgeir M.; Birkeland, Rolf G.; Wegge, Harald

2017-10-01

The most common technological route for metallurgical silicon production is to feed quartz and a carbon source ( e.g., coal, coke, or charcoal) into submerged-arc furnaces, which use electrodes as electrical conductors. We develop a mathematical model of a silicon furnace. A continuum approach is taken, and we derive from first principles the equations governing the time evolution of chemical concentrations, gas partial pressures, velocity, and temperature within a one-dimensional vertical section of a furnace. Numerical simulations are obtained for this model and are shown to compare favorably with experimental results obtained using silicon pilot furnaces. A rising interface is shown to exist at the base of the charge, with motion caused by the heating of the pilot furnace. We find that more reactive carbon reduces the silicon monoxide losses, while reducing the carbon content in the raw material mixture causes greater solid and liquid material to build-up in the charge region, indicative of crust formation (which can be detrimental to the silicon production process). We also comment on how the various findings could be relevant for industrial operations.

Silicon isotope ratio measurements by inductively coupled plasma tandem mass spectrometry for alteration studies of nuclear waste glasses.

PubMed

Gourgiotis, Alkiviadis; Ducasse, Thomas; Barker, Evelyne; Jollivet, Patrick; Gin, Stéphane; Bassot, Sylvain; Cazala, Charlotte

2017-02-15

High-level, long-lived nuclear waste arising from spent fuel reprocessing is vitrified in silicate glasses for final disposal in deep geologic formations. In order to better understand the mechanisms driving glass dissolution, glass alteration studies, based on silicon isotope ratio monitoring of 29 Si-doped aqueous solutions, were carried out in laboratories. This work explores the capabilities of the new type of quadrupole-based ICP-MS, the Agilent 8800 tandem quadrupole ICP-MS/MS, for accurate silicon isotope ratio determination for alteration studies of nuclear waste glasses. In order to avoid silicon polyatomic interferences, a new analytical method was developed using O 2 as the reaction gas in the Octopole Reaction System (ORS), and silicon isotopes were measured in mass-shift mode. A careful analysis of the potential polyatomic interferences on SiO + and SiO 2 + ion species was performed, and we found that SiO + ion species suffer from important polyatomic interferences coming from the matrix of sample and standard solutions (0.5M HNO 3 ). For SiO 2 + , no interferences were detected, and thus, these ion species were chosen for silicon isotope ratio determination. A number of key settings for accurate isotope ratio analysis like, detector dead time, integration time, number of sweeps, wait time offset, memory blank and instrumental mass fractionation, were considered and optimized. Particular attention was paid to the optimization of abundance sensitivity of the quadrupole mass filter before the ORS. We showed that poor abundance sensitivity leads to a significant shift of the data away from the Exponential Mass Fractionation Law (EMFL) due to the spectral overlaps of silicon isotopes combined with different oxygen isotopes (i.e. 28 Si 16 O 18 O + , 30 Si 16 O 16 O + ). The developed method was validated by measuring a series of reference solutions with different 29 Si enrichment. Isotope ratio trueness, uncertainty and repeatability were found to be <0.2%, <0.5% and <0.6%, respectively. These performances meet the requirements of the studies of nuclear glasses alteration and open up possibilities to use this method for precise determination of silicon content in natural samples by Isotope Dilution. Copyright © 2016 Elsevier B.V. All rights reserved.

[Dynamics of ecological-biochemical characteristics of the sea ice in the coastal zone of the White sea].

PubMed

Mel'nikov, I A; Korneeva, G A; zhitina, L S; Shanin, S S

2003-01-01

The distribution of salinity, silicon and phosphorus contents, and hydrolytic enzyme activities along a sea-coast transect was studied in melted ice cores and water samples taken from under the ice cover in the periods of active ice formation and melting in the Kandalaksha Bay, White Sea. The species list of identified algae was compiled, which included 170 species and varieties (90% of them belonged to diatoms). Strong correlations were revealed between the salinity of water samples and the content of silicon, protease activity, and the species composition of algae. Preliminary estimations of the rate of photosynthetic processes in individual cells of algae belonging to the mass species of the ice flora are discussed.

Silicone Migration From Baked-on Silicone Layers. Particle Characterization in Placebo and Protein Solutions.

PubMed

Funke, Stefanie; Matilainen, Julia; Nalenz, Heiko; Bechtold-Peters, Karoline; Mahler, Hanns-Christian; Friess, Wolfgang

2016-12-01

A significant number of therapeutic proteins are marketed as pre-filled syringes or other drug/device combination products and have been safely used in these formats for years. Silicone oil, which is used as lubricant, can migrate into the drug product and may interact with therapeutic proteins. In this study, particles in the size range of 0.2-5 μm and ≥1 μm as determined by resonant mass measurement and micro-flow imaging/light obscuration, respectively, resulted from silicone sloughing off the container barrel after agitation. The degree of droplet formation correlated well with the applied baked-on silicone levels of 13 μg and 94 μg per cartridge. Silicone migration was comparable in placebo, 2 mg/mL and 33 mg/mL IgG1 formulations containing 0.04% (w/v) polysorbate 20. Headspace substantially increased the formation of silicone droplets during agitation. The highest particle concentrations reached, however, were still very low compared to numbers described for spray-on siliconized containers. When applying adequate baked-on silicone levels below 100 μg, bake-on siliconization efficiently limits silicone migration into the drug product without compromising device functionality. Copyright © 2016 American Pharmacists Association®. Published by Elsevier Inc. All rights reserved.

Growth of Gallium Nitride Nanorods and Their Coalescence Overgrowth

DTIC Science & Technology

2012-09-07

absorption enhancements of amorphous silicon solar cells with periodical metal nanowall and nanopillar structures,” Optics Express, Vol. 20, No. S1, p...The obtained indium content can be slightly underestimated because certain incorporated indium atoms may diffuse out of the SSA image . However, such... luminescence InGaN/GaN quantum-well structures of various silicon -doping conditions,” Appl. Phys. Lett. 84, 2506-2508 (2004). 41. R. K. Debnath, R

Single-chip photonic transceiver based on bulk-silicon, as a chip-level photonic I/O platform for optical interconnects

PubMed Central

Kim, Gyungock; Park, Hyundai; Joo, Jiho; Jang, Ki-Seok; Kwack, Myung-Joon; Kim, Sanghoon; Gyoo Kim, In; Hyuk Oh, Jin; Ae Kim, Sun; Park, Jaegyu; Kim, Sanggi

2015-01-01

When silicon photonic integrated circuits (PICs), defined for transmitting and receiving optical data, are successfully monolithic-integrated into major silicon electronic chips as chip-level optical I/Os (inputs/outputs), it will bring innovative changes in data computing and communications. Here, we propose new photonic integration scheme, a single-chip optical transceiver based on a monolithic-integrated vertical photonic I/O device set including light source on bulk-silicon. This scheme can solve the major issues which impede practical implementation of silicon-based chip-level optical interconnects. We demonstrated a prototype of a single-chip photonic transceiver with monolithic-integrated vertical-illumination type Ge-on-Si photodetectors and VCSELs-on-Si on the same bulk-silicon substrate operating up to 50 Gb/s and 20 Gb/s, respectively. The prototype realized 20 Gb/s low-power chip-level optical interconnects for λ ~ 850 nm between fabricated chips. This approach can have a significant impact on practical electronic-photonic integration in high performance computers (HPC), cpu-memory interface, hybrid memory cube, and LAN, SAN, data center and network applications. PMID:26061463

Microstructure of SiC-Si-Al2O3 composites derived from silicone resin - metal aluminum filler compounds by low temperature reduction process

NASA Astrophysics Data System (ADS)

Narisawa, M.; Abe, Y.

2011-06-01

Concentrated slurry of a silicone resin with low carbon content, 3 μm aluminum particles and ethanol were prepared. After casting, addition of cross-linking agent and drying, silicone resin-aluminum composite with thick sheet form was obtained. The prepared sheet was heat-treated at 933 or 1073K with various holding times to characterize formed phases during the heat treatments. XRD patterns and FT-IR spectra revealed free Si formation and existence of Si-O-Si bond at 933K. The Si-O-Si bond, however, disappeared and silicon carbide was formed at 1073K. SEM observation indicated formation of cracks bridged with a number of tiny struts at 933K and conversion to wholly porous structure at 1073K.

Casting Characteristics of High Cerium Content Aluminum Alloys

DOE Office of Scientific and Technical Information (OSTI.GOV)

Weiss, D; Rios, O R; Sims, Z C

This paper compares the castability of the near eutectic aluminum-cerium alloy system to the aluminum-silicon and aluminum-copper systems. The alloys are compared based on die filling capability, feeding characteristics and tendency to hot tear in both sand cast and permanent mold applications. The castability ranking of the binary Al–Ce systems is as good as the aluminum-silicon system with some deterioration as additional alloying elements are added. In alloy systems that use cerium in combination with common aluminum alloying elements such as silicon, magnesium and/or copper, the casting characteristics are generally better than the aluminum-copper system. In general, production systems formore » melting, de-gassing and other processing of aluminum-silicon or aluminum-copper alloys can be used without modification for conventional casting of aluminum-cerium alloys.« less

Surface Characteristics and Catalytic Activity of Copper Deposited Porous Silicon Powder

PubMed Central

Abdul Halim, Muhammad Yusri; Tan, Wei Leng; Abu Bakar, Noor Hana Hanif; Abu Bakar, Mohamad

2014-01-01

Porous structured silicon or porous silicon (PS) powder was prepared by chemical etching of silicon powder in an etchant solution of HF: HNO3: H2O (1:3:5 v/v). An immersion time of 4 min was sufficient for depositing Cu metal from an aqueous solution of CuSO4 in the presence of HF. Scanning electron microscopy (SEM) analysis revealed that the Cu particles aggregated upon an increase in metal content from 3.3 wt% to 9.8 wt%. H2-temperature programmed reduction (H2-TPR) profiles reveal that re-oxidation of the Cu particles occurs after deposition. Furthermore, the profiles denote the existence of various sizes of Cu metal on the PS. The Cu-PS powders show excellent catalytic reduction on the p-nitrophenol regardless of the Cu loadings. PMID:28788272

An Enhanced Soft Vibrotactile Actuator Based on ePVC Gel with Silicon Dioxide Nanoparticles.

PubMed

Park, Won-Hyeong; Shin, Eun-Jae; Yun, Sungryul; Kim, Sang-Youn

2018-01-01

In this paper, we propose a soft vibrotactile actuator made by mixing silicon dioxide nanoparticles and plasticized PVC gel. The effect of the silicon dioxide nanoparticles in the plasticized PVC gel for the haptic performance is investigated in terms of electric, dielectric, and mechanical properties. Furthermore, eight soft vibrotactile actuators are prepared as a function of the content. Experiments are conducted to examine the haptic performance of the prepared eight soft vibrotactile actuators and to find the best weight ratio of the plasticized PVC gel to the nanoparticles. The experiments should show that the plasticized PVC gel with silicon dioxide nanoparticles improves the haptic performance of the plasticized PVC gel-based vibrotactile actuator, and the proposed vibrotactile actuator can create a variety of haptic sensations in a wide frequency range.

Rheology behaviour of modified silicone-dammar as a natural resin coating

NASA Astrophysics Data System (ADS)

Zakaria, Rosnah; Ahmad, Azizah Hanom

2015-08-01

Modified silicone-dammar (SD) was prepared by various weight percent from 5 - 45 wt% of dammar added. The n-value (viscosity index) of silicone with 5 and 10 % were turn to be 1.6 and 1.3 of viscosity index. While 15, 20, 25 and 30 wt% of dammar added gave 0.7, 0.3, 0.2 and 0.1 of viscosity index. On the other hand, 35, 40 and 45 wt% of dammar gave a fixed value of viscosity index of 0.03. This n-value shows the dispersion quality of paint mixture indicates that the modified silicone-dammar was followed the Bingham's Model. The rheology measurement of SD mixture was analysed by plotting ln shear stress vs shear rate value. Analysis of the graph showed a Bingham plastic model with regression R2 equivalent to 0.99. The linear viscoelastic behaviour of SD samples increased in parallel with increasing dammar content indicate that the suspension of dammar in silicone resin could flow steadily with time giving a pseudoplastic behaviour.

Effect of aluminum on the local structure of silicon in zeolites as studied by Si K edge X-ray absorption near-edge fine structure: spectra simulation with a non-muffin tin atomic background.

PubMed

Bugaev, Lusegen A; Bokhoven, Jeroen A van; Khrapko, Valerii V

2009-04-09

Experimental Si K edge X-ray absorption near-edge fine structure (XANES) of zeolite faujasite, mordenite, and beta are interpreted by means of the FEFF8 code, replacing the theoretical atomic background mu(0) by a background that was extracted from an experimental spectrum. To some extent, this diminished the effect of the inaccuracy introduced by the MT potential and accounted for the intrinsic loss of photoelectrons. The agreement of the theoretical and experimental spectra at energies above the white lines enabled us to identify structural distortion around silicon, which occurs with increasing aluminum content. The Si K edge XANES spectra are very sensitive to slight distortions in the silicon coordination. Placing an aluminum atom on a nearest neighboring T site causes a distortion in the silicon tetrahedron, shortening one of the silicon-oxygen bonds relative to the other three.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Freitas, J.C.C.; Emmerich, F.G.; Bonagamba, T.J.

The occurrence of silicon in two kinds of biomass (rice hulls and endocarp of babassu coconut) and the thermal transformations taking place in these materials under heat treatments are studied here. The authors report also the production, characterization, and study of carbonaceous materials with high SiC content through the carbothermal reduction of silica, using these natural precursors. X-ray diffraction, scanning electron microscopy, and {sup 13}C and {sup 29}Si room temperature high-resolution solid-state NMR measurements are used in the characterization and study of the materials as well as the process of SiC formation. Important conclusions about the nature of silicon inmore » these types of biomass and the effects of heat treatments on the structure of silicon-containing species are derived from the results presented. It is shown that silicon in these materials occurs in two distinct forms: amorphous hydrated silica and organically bound silicon species. The influence of spin-lattice relaxation dynamics on the NMR spectra is discussed, evidencing the role played by the paramagnetic defects produced in the materials through pyrolysis.« less

Oxygen-related 1-platinum defects in silicon: An electron paramagnetic resonance study

NASA Astrophysics Data System (ADS)

Juda, U.; Scheerer, O.; Höhne, M.; Riemann, H.; Schilling, H.-J.; Donecker, J.; Gerhardt, A.

1996-09-01

A monoclinic 1-platinum defect recently detected was investigated more thoroughly by electron paramagnetic resonance (EPR). The defect is one of the dominating defects in platinum doped silicon. With a perfect reproducibility it is observed in samples prepared from n-type silicon as well as from p-type silicon, in float zone (FZ) silicon as well as in Czochralski (Cz) silicon. Its concentration varies with the conditions of preparation and nearly reaches that of isolated substitutional platinum in Cz silicon annealed for 2 h at 540 °C after quenching from the temperature of platinum diffusion. Because of its concentration which in Cz-Si exceeds that in FZ-Si the defect is assumed to be oxygen-related though a hyperfine structure with 17O could not be resolved. The defect causes a level close to the valence band. This is concluded from variations of the Fermi level and from a discussion of the spin Hamiltonian parameters. In photo-EPR experiments the defect is coupled to recently detected acceptorlike self-interstitial related defects (SIRDs); their level position turns out to be near-midgap. These defects belong to the lifetime limiting defects in Pt-doped Si.

Electrostatic separation for recycling silver, silicon and polyethylene terephthalate from waste photovoltaic cells

NASA Astrophysics Data System (ADS)

Zhang, Zisheng; Sun, Bo; Yang, Jie; Wei, Yusheng; He, Shoujie

2017-04-01

Electrostatic separation technology has been proven to be an effective and environmentally friendly way of recycling electronic waste. In this study, this technology was applied to recycle waste solar panels. Mixed particles of silver and polyethylene terephthalate, silicon and polyethylene terephthalate, and silver and silicon were separated with a single-roll-type electrostatic separator. The influence of high voltage level, roll speed, radial position corona electrode and angular position of the corona electrode on the separation efficiency was studied. The experimental data showed that separation of silver/polyethylene terephthalate and silicon/polyethylene terephthalate needed a higher voltage level, while separation of silver and silicon needed a smaller angular position for the corona electrode and a higher roll speed. The change of the high voltage level, roll speed, radial position of the corona electrode, and angular position of the corona electrode has more influence on silicon separation efficiency than silver separation efficiency. An integrated process is proposed using a two-roll-type corona separator for multistage separation of a mixture of these three materials. The separation efficiency for silver and silicon were found to reach 96% and 98%, respectively.

A general classification of silicon utilizing organisms

NASA Astrophysics Data System (ADS)

Das, P.; Das, S.

2010-12-01

Silicon utilizing organisms may be defined as organisms with high silicon content (≥ 1% dry weight) and they can metabolize silicon with or without demonstrable silicon transporter genes (SIT) in them(Das,2010). Silicon is the second most abundant element in the lithosphere (27.70%) and it is as important as phosphorus and magnesium (0.03%) in the biota. Hydrated silica represents the second most abundant biogenic mineral after carbonate minerals. Silicon is accumulated and metabolized by some prokaryotes, and Si compounds can stimulate the growth of a range of fungi. It is well known that Si is essential for diatoms. In mammals, Si is considered an essential trace element, required in bone, cartilage and connective tissue formation, enzymatic activities and other metabolic processes. Silicon was suggested to act as a phosphoprotein effector in bone. In mammals, Si is also reported to positively influence the immune system and to be required for lymphocyte proliferation. The aqueous chemistry of Si is dominated by silicic acid at biological pH ranges. Monosilicic acid can form stable complexes with organic hydroxy-containing molecules . Biosilica also has been identified associated with various biomolecules including proteins and carbohydrates. There are main seven groups of silicon utilizing organisms belonging to Gram positive bacteria, algae, protozoa, sponges, fungi, lichens, and monocotyledon plants. In each group again all the members are not silicon utilizing organisms, thus selective members in each group are further classified depending their degree of silicon utilization. Important silicon utilizing bacteria are Mycobacteria, Nocardia, Streptomyces, Staphylococcus, Bacillus, Lactobacillus spp. etc., Important silicon utilizing algae are Centrobacillariophyceae, Pennatibacillariophyceae and Chrysophyceae. Many protozoa belonging to Heterokonta, Choanoflagellida, Actinopoda are well known silicon utilizing microorganisms. Hexactinellida ( glass sponges), Demospongiae and Sclerospongiae are important silicon utilizing sponges. Fungi like Aspergillus, Penicillium, Rhizopus etc. are also silicon utilizing. Candida spp. also belong to silicon utilizing organisms as they are also frequently found in sputum in silicotuberculosis cases. Many monocotyledon plants belonging to Pteridophyta, Magnoliophyta etc. are also well known silicon utilizing organisms. Almost all lichens belong to the group of silicon utilizing organisms.

Silicone-specific blood lymphocyte response in women with silicone breast implants.

PubMed Central

Ojo-Amaize, E A; Conte, V; Lin, H C; Brucker, R F; Agopian, M S; Peter, J B

1994-01-01

A blinded cross-sectional study was carried out with 99 women, 44 of whom had silicone breast implants. Group I consisted of 55 healthy volunteer women without breast implants; group II comprised 13 volunteer women with breast implants or explants who felt healthy; group III comprised 21 volunteer women with breast implants who had chronic fatigue, musculoskeletal symptoms, and skin disorders; and group IV comprised 10 women who had their prostheses explanted but still presented with clinical symptoms similar to those of the women in group III. Proliferative responses of peripheral blood mononuclear cells from all 99 women were measured by [3H]thymidine uptake after exposure to SiO2 silicon, or silicone gel. The levels of proliferative responses were expressed as stimulation indices, which were obtained by dividing the counts per minute of stimulated cells by the counts per minute of unstimulated cells. Abnormal responses to SiO2, silicon, or silicone gel were defined as a stimulation index of > 2.8, > 2.1, or > 2.4, respectively. Abnormal responses were observed in 0% of group I, 15% of group II, 29% of group III, and 30% of group IV (P < 0.0005 for group I versus groups II and IV). Thirty-one percent of symptomatic women with silicone gel breast implants had elevated serum silicon levels ( > 0.18 mg/liter); however, there was no significant correlation between abnormal cellular responses and silicon levels in blood serum, type of implant, time since first implantation, prosthesis explantation, number of implants, or report of implant leakage or rupture.(ABSTRACT TRUNCATED AT 250 WORDS) PMID:8556522

[Study of purity tests for silicone resins].

PubMed

Sato, Kyoko; Otsuki, Noriko; Ohori, Akio; Chinda, Mitsuru; Furusho, Noriko; Osako, Tsutomu; Akiyama, Hiroshi; Kawamura, Yoko

2012-01-01

In the 8th edition of Japan's Specifications and Standards for Food Additives, the purity test for silicone resins requires the determination of the refractive index and kinetic viscosity of the extracted silicone oil, and allows for only a limited amount of silicon dioxide. In the purity test, carbon tetrachloride is used to separate the silicone oil and silicon dioxide. To exclude carbon tetrachloride, methods were developed for separating the silicone oil and silicon dioxide from silicone resin, which use hexane and 10% n-dodecylbenzenesulfonic acid in hexane. For silicone oil, the measured refractive index and kinetic viscosity of the silicone oil obtained from the hexane extract were shown to be equivalent to those of the intact silicone oil. In regard to silicon dioxide, it was confirmed that, following the separation with 10% n-dodecylbenzenesulfonic acid in hexane, the level of silicon dioxide in silicone resin can be accurately determined. Therefore, in this study, we developed a method for testing the purity of silicone resins without the use of carbon tetrachloride, which is a harmful reagent.

1366 Project Silicon: Reclaiming US Silicon PV Leadership

DOE Office of Scientific and Technical Information (OSTI.GOV)

Lorenz, Adam

1366 Technologies’ Project Silicon addresses two of the major goals of the DOE’s PV Manufacturing Initiative Part 2 program: 1) How to reclaim a strong silicon PV manufacturing presence and; 2) How to lower the levelized cost of electricity (“LCOE”) for solar to $0.05-$0.07/kWh, enabling wide-scale U.S. market adoption. To achieve these two goals, US companies must commercialize disruptive, high-value technologies that are capable of rapid scaling, defensible from foreign competition, and suited for US manufacturing. These are the aims of 1366 Technologies Direct Wafer ™ process. The research conducted during Project Silicon led to the first industrial scaling ofmore » 1366’s Direct Wafer™ process – an innovative, US-friendly (efficient, low-labor content) manufacturing process that destroys the main cost barrier limiting silicon PV cost-reductions: the 35-year-old grand challenge of making quality wafers (40% of the cost of modules) without the cost and waste of sawing. The SunPath program made it possible for 1366 Technologies to build its demonstration factory, a key and critical step in the Company’s evolution. The demonstration factory allowed 1366 to build every step of the process flow at production size, eliminating potential risk and ensuring the success of the Company’s subsequent scaling for a 1 GW factory to be constructed in Western New York in 2016 and 2017. Moreover, the commercial viability of the Direct Wafer process and its resulting wafers were established as 1366 formed key strategic partnerships, gained entry into the $8B/year multi-Si wafer market, and installed modules featuring Direct Wafer products – the veritable proving grounds for the technology. The program also contributed to the development of three Generation 3 Direct Wafer furnaces. These furnaces are the platform for copying intelligently and preparing our supply chain – large-scale expansion will not require a bigger machine but more machines. SunPath filled the crucial development step between the original research effort in Lexington and the GW factory scheduled to be online before the end of the decade. At the conclusion of the project, it is clear that the Direct Wafer™ technology will have a dramatic impact on the entire silicon photovoltaic supply chain by effectively doubling existing silicon capacity (by reducing silicon usage by 50%) and reducing supply chain capital costs by 35%. The technology, when fully-scaled in the US, will also lead to significant job growth, with the eventual creation of 1,000 jobs in Western New York.« less

Characterization of solar-grade silicon produced by the SiF4-Na process

NASA Technical Reports Server (NTRS)

Sanjurjo, A.; Sancier, K. M.; Emerson, R. M.; Leach, S. C.; Minahan, J.

1986-01-01

A process was developed for producing low cost solar grade silicon by the reaction between SiF4 gas and sodium metal. The results of the characterization of the silicon are presented. These results include impurity levels, electronic properties of the silicon after crystal growth, and the performance of solar photovoltaic cells fabricated from wafers of the single crystals. The efficiency of the solar cells fabricated from semiconductor silicon and SiF4-Na silicon was the same.

Delta-Doping at Wafer Level for High Throughput, High Yield Fabrication of Silicon Imaging Arrays

NASA Technical Reports Server (NTRS)

Hoenk, Michael E. (Inventor); Nikzad, Shoulch (Inventor); Jones, Todd J. (Inventor); Greer, Frank (Inventor); Carver, Alexander G. (Inventor)

2014-01-01

Systems and methods for producing high quantum efficiency silicon devices. A silicon MBE has a preparation chamber that provides for cleaning silicon surfaces using an oxygen plasma to remove impurities and a gaseous (dry) NH3 + NF3 room temperature oxide removal process that leaves the silicon surface hydrogen terminated. Silicon wafers up to 8 inches in diameter have devices that can be fabricated using the cleaning procedures and MBE processing, including delta doping.

Silicon improves growth and alleviates oxidative stress in rice seedlings (Oryza sativa L.) by strengthening antioxidant defense and enhancing protein metabolism under arsanilic acid exposure.

PubMed

Geng, Anjing; Wang, Xu; Wu, Lishu; Wang, Fuhua; Wu, Zhichao; Yang, Hui; Chen, Yan; Wen, Dian; Liu, Xiangxiang

2018-08-30

Organoarsenic arsanilic acid (ASA) contamination of paddy soil is a serious but less concerned hazard to agriculture and health of people consuming rice as staple food, for rice is one major pathway of arsenic (As) exposure to human food. To date little research has studied the effect of ASA on biochemical process of rice. Silicon (Si) application is able to reduce the toxicities of heavy metals in numerous plants, but little information about ASA. This work investigated whether and how Si influenced alleviation of ASA toxicity in rice at biochemical level to have a better understanding of defense mechanism by Si against ASA stress. Results showed that ASA reduced rice growth, disturbed protein metabolism, increased lipid peroxidation but decreased the efficiencies of antioxidant activities compared to control plants, more severe in roots than in shoots. The addition of Si in ASA-stressed rice plants noticeably increased growth and development as well as soluble protein contents, but decreased malondialdehyde (MDA) contents in ASA-stressed rice plants, suggesting that Si did have critical roles in ASA detoxification in rice. Furthermore, increased superoxide dismutase (SOD), catalase (CAT) and peroxidase (POD) activities along with elevated glutathione (GSH) and ascorbic acid (AsA) contents implied the active involvement of ROS scavenging and played, at least in part, to Si-mediated alleviation of ASA toxicity in rice, and these changes were related to rice genotypes and tissues. The study provided physio-chemical mechanistic evidence on the beneficial effect of Si on organoarsenic ASA toxicity in rice seedlings. Copyright © 2018. Published by Elsevier Inc.

Silicon Priming Created an Enhanced Tolerance in Alfalfa (Medicago sativa L.) Seedlings in Response to High Alkaline Stress.

PubMed

Liu, Duo; Liu, Miao; Liu, Xiao-Long; Cheng, Xian-Guo; Liang, Zheng-Wei

2018-01-01

Alkaline stress as a result of higher pH usually triggers more severe physiological damage to plants than that of saline stress with a neutral pH. In the present study, we demonstrated that silicon (Si) priming of alfalfa ( Medicago sativa L.) seedlings increased their tolerance to high alkaline stress situations. Gongnong No. 1 seedlings were subjected to alkaline stress simulated by 25 mM Na 2 CO 3 (pH 11.2). Alkaline stress greatly decreased the biomass and caused severe lodging or wilting of alfalfa seedlings. In contrast, the application of Si to alfalfa seedlings 36 h prior to the alkaline treatment significantly alleviated the damage symptoms and greatly increased the biomass and chlorophyll content. Because of being concomitant with increasing photosynthesis and water use efficiency, decreasing membrane injury and malondialdehyde content, and increasing peroxidase and catalase ascorbate activities in alfalfa leaves, thereby alleviating the triggered oxidative damage by alkaline stress to the plant. Furthermore, Si priming significantly decreased the accumulation of protein and proline content in alfalfa, thus reducing photosynthetic feedback repression. Si priming significantly accumulated more Na in the roots, but led to a decrease of Na accumulation and an increase of K accumulation in the leaves under alkaline stress. Meanwhile, Si priming decreased the accumulation of metal ions such as Mg, Fe, Mn, and Zn in the roots of alfalfa seedlings under alkaline stress. Collectively, these results suggested that Si is involved in the metabolic or physiological changes and has a potent priming effect on the alkaline tolerance of alfalfa seedlings. The present study indicated that Si priming is a new approach to improve the alkaline tolerance in alfalfa and provides increasing information for further exploration of the alkaline stress response at the molecular level in alfalfa.

Low-power chip-level optical interconnects based on bulk-silicon single-chip photonic transceivers

NASA Astrophysics Data System (ADS)

Kim, Gyungock; Park, Hyundai; Joo, Jiho; Jang, Ki-Seok; Kwack, Myung-Joon; Kim, Sanghoon; Kim, In Gyoo; Kim, Sun Ae; Oh, Jin Hyuk; Park, Jaegyu; Kim, Sanggi

2016-03-01

We present new scheme for chip-level photonic I/Os, based on monolithically integrated vertical photonic devices on bulk silicon, which increases the integration level of PICs to a complete photonic transceiver (TRx) including chip-level light source. A prototype of the single-chip photonic TRx based on a bulk silicon substrate demonstrated 20 Gb/s low power chip-level optical interconnects between fabricated chips, proving that this scheme can offer compact low-cost chip-level I/O solutions and have a significant impact on practical electronic-photonic integration in high performance computers (HPC), cpu-memory interface, 3D-IC, and LAN/SAN/data-center and network applications.

Accelerated solvent extraction (ASE) for purification and extraction of silicone passive samplers used for the monitoring of organic pollutants.

PubMed

Brockmeyer, Berit; Kraus, Uta R; Theobald, Norbert

2015-12-01

Silicone passive samplers have gained an increasing attention as single-phased, practical and robust samplers for monitoring of organic contaminants in the aquatic environment in recent years. However, analytical challenges arise in routine application during the extraction of analytes as silicone oligomers are co-extracted and interfere severely during chemical analyses (e.g. gas chromatographic techniques). In this study, we present a fast, practical pre-cleaning method for silicone passive samplers applying accelerated solvent extraction (ASE) for the removal of silicone oligomers prior to the water deployment (hexane/dichloromethane, 100 °C, 70 min). ASE was also shown to be a very fast (10 min) and efficient extraction method for non-polar contaminants (non-exposed PRC recoveries 66-101 %) sampled by the silicone membrane. For both applications, temperature, extraction time and the solvent used for ASE have been optimized. Purification of the ASE extract was carried out by silica gel and high-pressure liquid size exclusion chromatography (HPLC-SEC). The silicone oligomer content was checked by total reflection X-ray fluorescence spectroscopy (TXRF) in order to confirm the absence of the silicone oligomers prior to analysis of passive sampler extracts. The established method was applied on real silicone samplers from the North- and Baltic Sea and showed no matrix effects during analysis of organic pollutants. Internal laboratory standard recoveries were in the same range for laboratory, transport and exposed samplers (85-126 %).

What controls silicon isotope fractionation during dissolution of diatom opal?

NASA Astrophysics Data System (ADS)

Wetzel, F.; de Souza, G. F.; Reynolds, B. C.

2014-04-01

The silicon isotope composition of opal frustules from photosynthesising diatoms is a promising tool for studying past changes in the marine silicon cycle, and indirectly that of carbon. Dissolution of this opal may be accompanied by silicon isotope fractionation that could disturb the pristine silicon isotope composition of diatom opal acquired in the surface ocean. It has previously been shown that dissolution of fresh and sediment trap diatom opal in seawater does fractionate silicon isotopes. However, as the mechanism of silicon isotope fractionation remained elusive, it is uncertain whether opal dissolution in general is associated with silicon isotope fractionation considering that opal chemistry and surface properties are spatially and temporally (i.e. opal of different age) diverse. In this study we dissolved sediment core diatom opal in 5 mM NaOH and found that this process is not associated with significant silicon isotope fractionation. Since no variability of the isotope effect was observed over a wide range of dissolution rates, we can rule out the suggestion that back-reactions had a significant influence on the net isotope effect. Similarly, we did not observe an impact of temperature, specific surface area, or degree of undersaturation on silicon isotope partitioning during dissolution, such that these can most likely also be ruled out as controlling factors. We discuss the potential impacts of the chemical composition of the dissolution medium and age of diatom opal on silicon isotope fractionation during dissolution. It appears most likely that the controlling mechanism of silicon isotope fractionation during dissolution is related to the reactivity, or potentially, aluminium content of the opal. Such a dependency would imply that silicon isotope fractionation during dissolution of diatom opal is spatially and temporally variable. However, since the isotope effects during dissolution are small, the silicon isotope composition of diatom opal appears to be robust against dissolution in the deep sea sedimentary environment.

Facile fabrication of rice husk based silicon dioxide nanospheres loaded with silver nanoparticles as a rice antibacterial agent

PubMed Central

Cui, Jianghu; Liang, You; Yang, Desong; Liu, Yingliang

2016-01-01

Bacterial leaf blight of rice caused by Xanthomonas oryzae pv. oryzae (Xoo) is a major disease of rice, leading to reduction in production by 10–50%. In order to control this disease, various chemical bactericides have been used. Wide and prolonged application of chemical bactericides resulted in the resistant strain of Xoo that was isolated from rice. To address this problem, we were searching for an environmentally friendly alternative to the commonly used chemical bactericides. In this work, we demonstrate that silicon dioxide nanospheres loaded with silver nanoparticles (SiO2-Ag) can be prepared by using rice husk as base material precursor. The results of the antibacterial tests showed that SiO2-Ag composites displayed antibacterial activity against Xoo. At cellular level, the cell wall/membrane was damaged and intercellular contents were leaked out by slow-releasing of silver ions from SiO2-Ag composites. At molecular level, this composite induced reactive oxygen species production and inhibited DNA replication. Based on the results above, we proposed the potential antibacterial mechanism of SiO2-Ag composites. Moreover, the cytotoxicity assay indicated that the composites showed mild toxicity with rice cells. Thus, this work provided a new strategy to develop biocide derived from residual biomass. PMID:26888152

Effects of silicon nanowires (SiNWs) contents on the optical and dielectric properties of poly(3-hexylthiophene):SiNWs nanocomposites

NASA Astrophysics Data System (ADS)

Saidi, Hamza; Walid, Aloui; Bouazizi, Abdelaziz; Herrero, Beatriz Romero; Saidi, Faouzi

2017-08-01

In this study, we investigated the dependency of the optical and electrical proprieties of poly(3-hexylthiophene):silicon nanowires (P3HT:SiNWs) nanocomposites on the concentration of SiNWs based on photoluminescence (PL) and impedance spectroscopy. The PL spectra indicated the presence of charge transfer at low concentrations of SiNWs. The effects of the SiNWs contents on the loss mechanism were determined based on permittivity measurements, which were related to the distribution of the SiNWs contents on the polymer backbones, as well as being correlated with the PL and conductance results. The imaginary part of the impedance exhibited a high relaxation frequency attributable to Maxwell-Wagner polarization, where the extracted relaxation time was in the range of milliseconds. The Cole-Cole diagram had an excellent fit via the equivalent circuit, which incorporated the chemical capacitance Cμ, contact electrical resistance Rs, and recombination resistance Rp.

Disilane chemisorption on Si(x)Ge(1-x)(100)-(2 x 1): molecular mechanisms and implications for film growth rates.

PubMed

Ng, Rachel Qiao-Ming; Tok, E S; Kang, H Chuan

2009-07-28

At low temperatures, hydrogen desorption is known to be the rate-limiting process in silicon germanium film growth via chemical vapor deposition. Since surface germanium lowers the hydrogen desorption barrier, Si(x)Ge((1-x)) film growth rate increases with the surface germanium fraction. At high temperatures, however, the molecular mechanisms determining the epitaxial growth rate are not well established despite much experimental work. We investigate these mechanisms in the context of disilane adsorption because disilane is an important precursor used in film growth. In particular, we want to understand the molecular steps that lead, in the high temperature regime, to a decrease in growth rate as the surface germanium increases. In addition, there is a need to consider the issue of whether disilane adsorbs via silicon-silicon bond dissociation or via silicon-hydrogen bond dissociation. It is usually assumed that disilane adsorption occurs via silicon-silicon bond dissociation, but in recent work we provided theoretical evidence that silicon-hydrogen bond dissociation is more important. In order to address these issues, we calculate the chemisorption barriers for disilane on silicon germanium using first-principles density functional theory methods. We use the calculated barriers to estimate film growth rates that are then critically compared to the experimental data. This enables us to establish a connection between the dependence of the film growth rate on the surface germanium content and the kinetics of the initial adsorption step. We show that the generally accepted mechanism where disilane chemisorbs via silicon-silicon bond dissociation is not consistent with the data for film growth kinetics. Silicon-hydrogen bond dissociation paths have to be included in order to give good agreement with the experimental data for high temperature film growth rate.

Surface wet-ability modification of thin PECVD silicon nitride layers by 40 keV argon ion treatments

NASA Astrophysics Data System (ADS)

Caridi, F.; Picciotto, A.; Vanzetti, L.; Iacob, E.; Scolaro, C.

2015-10-01

Measurements of wet-ability of liquid drops have been performed on a 30 nm silicon nitride (Si3N4) film deposited by a PECVD reactor on a silicon wafer and implanted by 40 keV argon ions at different doses. Surface treatments by using Ar ion beams have been employed to modify the wet-ability. The chemical composition of the first Si3N4 monolayer was investigated by means of X-ray Photoelectron Spectroscopy (XPS). The surface morphology was tested by Atomic Force Microscopy (AFM). Results put in evidence the best implantation conditions for silicon nitride to increase or to reduce the wet-ability of the biological liquid. This permits to improve the biocompatibility and functionality of Si3N4. In particular experimental results show that argon ion bombardment increases the contact angle, enhances the oxygen content and increases the surface roughness.

The behavior of silicon and boron in the surface of corroded nuclear waste glasses : an EFTEM study.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Buck, E. C.; Smith, K. L.; Blackford, M. G.

1999-11-23

Using electron energy-loss filtered transmission electron microscopy (EFTEM), we have observed the formation of silicon-rich zones on the corroded surface of a West Valley (WV6) glass. This layer is approximately 100-200 nm thick and is directly underneath a precipitated smectite clay layer. Under conventional (C)TEM illumination, this layer is invisible; indeed, more commonly used analytical techniques, such as x-ray energy dispersive spectroscopy (EDS), have failed to describe fully the localized changes in the boron and silicon contents across this region. Similar silicon-rich and boron-depleted zones were not found on corroded Savannah River Laboratory (SRL) borosilicate glasses, including SRL-EA and SRL-51,more » although they possessed similar-looking clay layers. This study demonstrates a new tool for examining the corroded surfaces of materials.« less

Silicone modified resins for graphite fiber laminates

NASA Technical Reports Server (NTRS)

Frost, L. W.; Bower, G. M.

1979-01-01

The development of silicon modified resins for graphite fiber laminates which will prevent the dispersal of graphite fibers when the composites are burned is discussed. Eighty-five silicone modified resins were synthesized and evaluated including unsaturated polyesters, thermosetting methacrylates, epoxies, polyimides, and phenolics. Neat resins were judged in terms of Si content, homogeneity, hardness, Char formation, and thermal stability. Char formation was estimated by thermogravimetry to 1,000 C in air and in N2. Thermal stability was evaluated by isothermal weight loss measurements for 200 hrs in air at three temperatures. Four silicone modified epoxies were selected for evaluation in unidirectional filament wound graphite laminates. Neat samples of these resins had 1,000 C char residues of 25 to 50%. The highest flexural values measured for the laminates were a strength of 140 kpsi and a modulus of 10 Mpsi. The highest interlaminar shear strength was 5.3 kpsi.

Preparation and mechanical properties of carbon nanotube-silicon nitride nano-ceramic matrix composites

NASA Astrophysics Data System (ADS)

Tian, C. Y.; Jiang, H.

2018-01-01

Carbon nanotube-silicon nitride nano-ceramic matrix composites were fabricated by hot-pressing nano-sized Si3N4 powders and carbon nanotubes. The effect of CNTs on the mechanical properties of silicon nitride was researched. The phase compositions and the microstructure characteristics of the samples as well as the distribution of carbon nanotube in the silicon nitride ceramic were analyzed by X-ray diffraction and scanning electron microscope. The results show that the microstructure of composites consists mainly of α-Si3N4, β-Si3N4, Si2N2O and carbon natubes. The addition of proper amount of carbon nanotubes can improve the fracture toughness and the flexural strength, and the optimal amount of carbon nanotube are both 3wt.%. However the Vickers hardness values decrease with the increase of carbon nanotubes content.

Synthesis and characterization of UV-absorbing fluorine-silicone acrylic resin polymer

NASA Astrophysics Data System (ADS)

Lei, Huibin; He, Deliang; Guo, Yanni; Tang, Yining; Huang, Houqiang

2018-06-01

A series of UV-absorbing fluorine-silicone acrylic resin polymers containing different amount of UV-absorbent were successfully prepared by solution polymerization, with 2-[3-(2H-Benzotriazol-2-yl)-4-hydroxyphenyl] ethyl methacrylate (BHEM), vinyltrimethoxysilane (VTMS) and hexafluorobutyl methacrylate (HFMA) as modifying monomers. The acrylic polymers and the coatings thereof were characterized by Fourier transform infrared spectrum (FT-IR), X-ray photoelectron spectroscopy (XPS), Ultraviolet-visible (UV-vis) absorption spectrum, thermogravimetric analysis (TGA), water contact angle (CA) and Xenon lamp artificial accelerated aging tests. Results indicated that the resin exhibited high UV absorption performance as well as good thermal stability. The hydrophobicity of the coatings was of great improvement because of the bonded fluorine and silicone. Meanwhile, the weather-resistance was promoted through preferably colligating the protective effects of BHEM, organic fluorine and silicone. Also, a fitting formula about the weatherability with the BMHE content was tentatively proposed.

Electrochemically deposited cobalt/platinum (Co/Pt) film into porous silicon: Structural investigation and magnetic properties

NASA Astrophysics Data System (ADS)

Harraz, F. A.; Salem, A. M.; Mohamed, B. A.; Kandil, A.; Ibrahim, I. A.

2013-01-01

A nanostructured CoPt magnetic film was deposited from a single electrolyte into porous silicon layer by an electrochemical technique, followed by annealing at 600 °C in Ar atmosphere during which the CoPt alloy was converted to L10 ordered phase. Porous silicon with pore diameter between 5 and 100 nm was firstly fabricated by galvanostatic anodization of n-type silicon wafer in the presence of CrO3 as oxidizing agent and ethanol or sodium lauryl sulfate as surfactants. The role of the surfactant on the produced pore size and morphology was investigated by means of UV-vis spectra. As-formed porous silicon was consequently used as a template for the electrodeposition of magnetic CoPt film. The phase formation, microstructure and the magnetic properties were fully analyzed by XRD, FE-SEM, EDS and VSM measurements. It was found that, upon annealing the coercivity was significantly increased due to the transformation to the L10 ordered structure. The saturation magnetization and remanence ratio were also found to increase, indicating no loss of Co content or oxidation reaction after the annealing. Results of synthesis and characterization of CoPt/porous silicon nanocomposite are addressed and thoroughly discussed.

High precision measurement of silicon in naphthas by ICP-OES using isooctane as diluent.

PubMed

Gazulla, M F; Rodrigo, M; Orduña, M; Ventura, M J; Andreu, C

2017-03-01

An analytical protocol for the accurate and precise determination of Si in naphthas is presented by using ICP-OES, optimizing from the sample preparation to the measurement conditions, in order to be able to analyze for the first time silicon contents below 100µgkg -1 in a relatively short time thus being used as a control method. In the petrochemical industry, silicon can be present as a contaminant in different petroleum products such as gasoline, ethanol, or naphthas, forming different silicon compounds during the treatment of these products that are irreversibly adsorbed onto catalyst surfaces decreasing its time life. The complex nature of the organic naphtha sample together with the low detection limits needed make the analysis of silicon quite difficult. The aim of this work is to optimize the measurement of silicon in naphthas by ICP-OES introducing as an improvement the use of isooctane as diluent. The set up was carried out by optimizing the measurement conditions (power, nebulizer flow, pump rate, read time, and viewing mode) and the sample preparation (type of diluent, cleaning process, blanks, and studying various dilution ratios depending on the sample characteristics). Copyright © 2016 Elsevier B.V. All rights reserved.

[Effect of silicon coating on bonding strength of ceramics and titanium].

PubMed

Zhou, Shu; Wang, Yu; Zhang, Fei-Min; Guang, Han-Bing

2009-06-01

This study investigated the effect of silicon coating (SiO2) by solution-gelatin (Sol-Gel) technology on bonding strength of titanium and ceramics. Sixteen pure titanium specimens with the size of 25 mm x 3 mm x 0.5 mm were divided into two groups (n=8), test group was silicon coated by Sol-Gel technology, the other one was control group. The middle area of the samples were veneered with Vita Titankeramik system, the phase composition of two specimens were characterized by X-ray diffraction (XRD). The bonding strength of titanium/porcelain was evaluated using three-point bending test. The interface of titanium and porcelain and fractured titanium surface were investigated by scanning electron microscope (SEM) with energy depressive spectrum (EDS). Contents of surface silicon increased after modification with silicon coated by Sol-Gel technology. The mean bonding strength of test group and control group were (37.768 +/- 0.777) MPa and (29.483 +/- 1.007) MPa. There was a statistically significant difference (P=0.000) between them. The bonded ceramic boundary of test group was wider than control group. Silicon coating by Sol-Gel technology was significant in improving bonding strength of titanium/Vita Titankeramik system.

PCC/AC shoulder joint seal evaluation

DOT National Transportation Integrated Search

1999-05-07

This report presents the findings on the evaluation of Crafco Incorporated Roadsaver 903 SL Silicone Sealant and Dow Corning 890 SL Silicone Sealant. The Research Technical Panel had proposed to use the two self-leveling silicone joint sealants in te...

A wafer-level vacuum package using glass-reflowed silicon through-wafer interconnection for nano/micro devices.

PubMed

Jin, Joo-Young; Yoo, Seung-Hyun; Yoo, Byung-Wook; Kim, Yong-Kweon

2012-07-01

We propose a vacuum wafer-level packaging (WLP) process using glass-reflowed silicon via for nano/micro devices (NMDs). A through-wafer interconnection (TWIn) substrate with silicon vias and reflowed glass is introduced to accomplish a vertical feed-through of device. NMDs are fabricated in the single crystal silicon (SCS) layer which is formed on the TWIn substrate by Au eutectic bonding including Cr adhesion layer. The WLPof the devices is achieved with the capping glass wafer anodically bonded to the SCS layer. In order to demonstrate the successful hermetic packaging, we fabricated the micro-Pirani gauge in the SCS layer, and packaged it in the wafer-level. The vacuum level inside the packaging was measured to be 3.1 Torr with +/- 0.12 Torr uncertainty, and the packaging leakage was not detected during 24 hour after the packaging.

Research and preparation of ultra purity silicon tetrachloride

NASA Astrophysics Data System (ADS)

Wan, Ye; Zhao, Xiong; Yan, Dazhou; Yang, Dian; Li, Yunhao; Guo, Shuhu

2017-10-01

This article demonstrated a technology for producing ultra-purity silicon tetrachloride, which using the high purity SiCl4 as raw material through the method of combination ray reaction with purification. This technology could remove metal impurities and compounds impurities contained hydrogen effectively. The purity of product prepared by this technology can reach at 99.9999%, content of metal impurities can be low at 0.3PPb, meeting the requirement of industry easily. This technology has the advantages of simple process, continuous operation, and stable performance.

Method for preparing high purity vanadium

DOEpatents

Schmidt, Frederick; Carlson, O. Norman

1986-09-09

A method for preparing high purity vanadium having a low silicon content has been developed. Vanadium pentoxide is reduced with a stoichiometric, or slightly deficient amount of aluminum to produce a vanadium-aluminum alloy containing an excess of oxygen. Silicon is removed by electron-beam melting the alloy under oxidizing conditions to promote the formation of SiO which is volatile at elevated temperatures. Excess oxygen is removed by heating the alloy in the presence of calcium metal to form calcium oxide.

Method for preparing high purity vanadium

DOEpatents

Schmidt, F.; Carlson, O.N.

1984-05-16

A method for preparing high purity vanadium having a low silicon content has been developed. Vanadium pentoxide is reduced with a stoichiometric, or slightly deficient amount of aluminum to produce a vanadium-aluminum alloy containing an excess of oxygen. Silicon is removed by electron-beam melting the alloy under oxidizing conditions to promote the formation of SiO which is volatile at elevated temperatures. Excess oxygen is removed by heating the alloy in the presence of calcium metal to form calcium oxide.

Ecophysiological response to seasonal variations in water availability in the arborescent, endemic plant Vellozia gigantea.

PubMed

Morales, Melanie; Garcia, Queila S; Munné-Bosch, Sergi

2015-03-01

The physiological response of plants growing in their natural habitat is strongly determined by seasonal variations in environmental conditions and the interaction of abiotic and biotic stresses. Here, leaf water and nutrient contents, changes in cellular redox state and endogenous levels of stress-related phytohormones (abscisic acid (ABA), salicylic acid and jasmonates) were examined during the rainy and dry season in Vellozia gigantea, an endemic species growing at high elevations in the rupestrian fields of the Espinhaço Range in Brazil. Enhanced stomatal closure and increased ABA levels during the dry season were associated with an efficient control of leaf water content. Moreover, reductions in 12-oxo-phytodienoic acid (OPDA) levels during the dry season were observed, while levels of other jasmonates, such as jasmonic acid and jasmonoyl-isoleucine, were not affected. Changes in ABA and OPDA levels correlated with endogenous concentrations of iron and silicon, hydrogen peroxide, and vitamin E, thus indicating complex interactions between water and nutrient contents, changes in cellular redox state and endogenous hormone concentrations. Results also suggested crosstalk between activation of mechanisms for drought stress tolerance (as mediated by ABA) and biotic stress resistance (mediated by jasmonates), in which vitamin E levels may serve as a control point. It is concluded that, aside from a tight ABA-associated regulation of stomatal closure during the dry season, crosstalk between activation of abiotic and biotic defences, and nutrient accumulation in leaves may be important modulators of plant stress responses in plants growing in their natural habitat. © The Author 2015. Published by Oxford University Press. All rights reserved. For Permissions, please email: journals.permissions@oup.com.

A comprehensive study of radon levels and associated radiation doses in Himalayan groundwater

NASA Astrophysics Data System (ADS)

Prasad, Mukesh; Kumar, G. Anil; Sahoo, B. K.; Ramola, R. C.

2018-03-01

The concentration of radon in groundwater is mainly governed by the radium content in the rocks of the aquifer. The internal exposure to high levels of radon in water is directly associated with the radiological risk to members of public. In this work, radon concentrations were measured in groundwater of Garhwal Himalaya, India, using scintillation detector-based RnDuo and silicon detector-based RAD7 monitors. An inter-comparison exercise was carried out between RnDuo and RAD7 techniques for a few samples to validate the results. The radiation doses associated with the exposure to radon in water were estimated from measured values of activity concentrations. An attempt has been made to see the effect of geology, geohydrology and different types of sources on radon levels in Himalayan groundwater. The experimental techniques and results obtained are discussed in detail.

Deep level transient spectroscopic investigation of phosphorus-doped silicon by self-assembled molecular monolayers.

PubMed

Gao, Xuejiao; Guan, Bin; Mesli, Abdelmadjid; Chen, Kaixiang; Dan, Yaping

2018-01-09

It is known that self-assembled molecular monolayer doping technique has the advantages of forming ultra-shallow junctions and introducing minimal defects in semiconductors. In this paper, we report however the formation of carbon-related defects in the molecular monolayer-doped silicon as detected by deep-level transient spectroscopy and low-temperature Hall measurements. The molecular monolayer doping process is performed by modifying silicon substrate with phosphorus-containing molecules and annealing at high temperature. The subsequent rapid thermal annealing drives phosphorus dopants along with carbon contaminants into the silicon substrate, resulting in a dramatic decrease of sheet resistance for the intrinsic silicon substrate. Low-temperature Hall measurements and secondary ion mass spectrometry indicate that phosphorus is the only electrically active dopant after the molecular monolayer doping. However, during this process, at least 20% of the phosphorus dopants are electrically deactivated. The deep-level transient spectroscopy shows that carbon-related defects are responsible for such deactivation.

Novel mid-infrared silicon/germanium detector concepts

NASA Astrophysics Data System (ADS)

Presting, Hartmut; Konle, Johannes; Hepp, Markus; Kibbel, Horst; Thonke, Klaus; Sauer, Rolf; Corbin, Elizabeth A.; Jaros, Milan

2000-10-01

Highly p-doped silicon/silicon-germanium (Si/SiGe) quantum well (QW) structures are grown by molecular beam epitaxy on double-sided polished (100)Si substrates for mid-IR (3 to 5 micrometers and 8 to 12 micrometers ) detection. The samples are characterized by secondary ion mass spectroscopy, x-ray diffraction, and absorption measurements. Single mesa detectors are fabricated as well as large-area focal plane arrays with 256 X 256 pixels using standard Si integrated processing techniques. The detectors, based on heterointernal photo-emission (HIP) of photogenerated holes from a heavily p-doped (p++ approximately 5 X 1020 cm-3) SiGe QW into an undoped silicon layer, operate at 77 K. Various novel designs of the SiGe HIP's such as Ge- and B-grading, double- and multi-wells, are realized; in addition, thin doping setback layers between the highly doped well and the undoped Si layer are introduced. The temperature dependence of dark currents and photocurrents are measured up to 225 K. In general, we observe broad photoresponse curves with peak external quantum efficiencies, up to (eta) ext approximately 0.5% at 77 K and 4(mu) , detectivities up to 8 X 1011 cm(root)Hz/W are obtained. We demonstrate that by varying the thickness, Ge content, and doping level of the single- and the multi-QWs of SiGe HIP detectors, the photoresponse peak and the cutoff of the spectrum can be tuned over a wide wavelength range. The epitaxial versatility of the Si/SiGe system enables a tailoring of the photoresponse spectrum which demonstrates the advantages of the SiGe system in comparison over commercially used silicide detectors.

Electric measurements of PV heterojunction structures a-SiC/c-Si

NASA Astrophysics Data System (ADS)

Perný, Milan; Šály, Vladimír; Janíček, František; Mikolášek, Miroslav; Váry, Michal; Huran, Jozef

2018-01-01

Due to the particular advantages of amorphous silicon or its alloys with carbon in comparison to conventional crystalline materials makes such a material still interesting for study. The amorphous silicon carbide may be used in a number of micro-mechanical and micro-electronics applications and also for photovoltaic energy conversion devices. Boron doped thin layers of amorphous silicon carbide, presented in this paper, were prepared due to the optimization process for preparation of heterojunction solar cell structure. DC and AC measurement and subsequent evaluation were carried out in order to comprehensively assess the electrical transport processes in the prepared a-SiC/c-Si structures. We have investigated the influence of methane content in deposition gas mixture and different electrode configuration.

Improvement of thermal conductivities for silicone nanocomposite via incorporating poly(γ-methacryloxypropyltrimethoxy silane) grafted graphene fillers

NASA Astrophysics Data System (ADS)

Chen, Tian; Liu, Bo

2018-02-01

The proposed grafting polymerization of γ-methacryloxypropyltrimethoxy silane was performed to functionalize graphene, aiming to fabricate functionalized graphene/silicone with excellent thermal conductivities. The surface morphology and element content of poly(γ-methacryloxypropyltrimethoxy silane) grafted reduced graphene oxide (g-RGO) was characterized by Atomic force microscope (AFM) and X-ray photoelectron spectroscopy (XPS). The usage of g-RGO was benefit for improving the thermal conductivity of silicone (SI). The g-RGO/SI (2 wt% filler) had thermal conductivity of 1.31 W·m-1·K-1 and thermal diffusivity of 1.08 mm2·s-1 (increased by 620% compared to that of SI), which held potential for electronic packaging materials and micro-electro-mechanical systems apparatus.

Macrosegregation During Re-melting and Holding of Directionally Solidified Al-7 wt.% Si Alloy in Microgravity

NASA Astrophysics Data System (ADS)

Lauer, M.; Ghods, M.; Angart, S. G.; Grugel, R. N.; Tewari, S. N.; Poirier, D. R.

2017-08-01

As-cast aluminum-7 wt.% ailicon alloy sample rods were re-melted and directionally solidified on Earth which resulted in uniform dendritically aligned arrays. These arrays were then partially back-melted through an imposed, and constant, temperature gradient in the microgravity environment aboard the International Space Station. The mushy zones that developed in the seed crystals were held for different periods prior to initiating directional solidification. Upon return, examination of the initial mushy-zone regions exhibited significant macrosegregation in terms of a solute-depleted zone that increased as a function of the holding time. The silicon (solute) content in these regions was measured on prepared longitudinal sections by electron microprobe analysis as well as by determining the fraction eutectic on several transverse sections. The silicon content was found to increase up the temperature gradient resulting in significant silicon concentration immediately ahead of the mushy-zone tips. The measured macrosegregation agrees well with calculations from a mathematical model developed to simulate the re-melting and holding process. The results, due to processing in a microgravity environment where buoyancy and thermosolutal convection are minimized, serve as benchmark solidification data.

Induction of resistance of corn plants to Spodoptera frugiperda (J. E. Smith, 1797) (Lepidoptera: Noctuidae) by application of silicon and gibberellic acid.

PubMed

Alvarenga, R; Moraes, J C; Auad, A M; Coelho, M; Nascimento, A M

2017-08-01

The aim of this study was to evaluate the effects of silicon application and administration of the phytohormone gibberellic acid on resistance of the corn plants to the fall armyworm (FAW), Spodoptera frugiperda, and their vegetative characteristics. We evaluated larval and pupal duration, survival and biomass, and adult longevity, malformation and fecundity of S. frugiperda after feeding on plant matter treated with silicon and/or gibberellic acid. The feeding preference of FAW first-instar larvae, the total leaf area consumed by the insects, and the vegetative parameters of corn plants were also evaluated. No significant differences were observed in the measured parameters of larval and pupal stages of S. frugiperda in response to silicon or gibberellic acid. In adult stage insects, the number of eggs per female was significantly reduced in insects derived from larvae fed plants treated with silicon or gibberellic acid. In a non-preference test, 48 h after release, caterpillars preferred control untreated plants and consumed less matter from plants that had received hormonal treatment (gibberellic acid). Gibberellic acid also altered the vegetative characteristics of plants, by increasing their height, shoot fresh and dry mass, and silicon content. We conclude that gibberellic acid can alter the vegetative characteristics and silicon uptake of corn plants, leading to a reduction in their consumption by S. frugiperda larvae and a decrease in female insect oviposition.

Influence of surface pre-treatment on the electronic levels in silicon MaWCE nanowires.

PubMed

Venturi, Giulia; Castaldini, Antonio; Schleusener, Alexander; Sivakov, Vladimir; Cavallini, Anna

2015-05-15

Deep level transient spectroscopy (DLTS) was performed on n-doped silicon nanowires grown by metal-assisted wet chemical etching (MaWCE) with gold as the catalyst in order to investigate the energetic scheme inside the bandgap. To observe the possible dependence of the level scheme on the processing temperature, DLTS measurements were performed on the nanowires grown on a non-treated Au/Si surface and on a thermally pre-treated Au/Si surface. A noticeable modification of the configuration of the energy levels was observed, induced by the annealing process. Based on our results on these MaWCE nanowires and on literature data about deep levels in bulk silicon, some hypotheses were advanced regarding the identification of the defects responsible of the energy levels revealed.

Automatic Control of Silicon Melt Level

NASA Technical Reports Server (NTRS)

Duncan, C. S.; Stickel, W. B.

1982-01-01

A new circuit, when combined with melt-replenishment system and melt level sensor, offers continuous closed-loop automatic control of melt-level during web growth. Installed on silicon-web furnace, circuit controls melt-level to within 0.1 mm for as long as 8 hours. Circuit affords greater area growth rate and higher web quality, automatic melt-level control also allows semiautomatic growth of web over long periods which can greatly reduce costs.

Silicon: Potential to Promote Direct and Indirect Effects on Plant Defense Against Arthropod Pests in Agriculture.

PubMed

Reynolds, Olivia L; Padula, Matthew P; Zeng, Rensen; Gurr, Geoff M

2016-01-01

Silicon has generally not been considered essential for plant growth, although it is well recognized that many plants, particularly Poaceae, have substantial plant tissue concentrations of this element. Recently, however, the International Plant Nutrition Institute [IPNI] (2015), Georgia, USA has listed it as a "beneficial substance". This reflects that numerous studies have now established that silicon may alleviate both biotic and abiotic stress. This paper explores the existing knowledge and recent advances in elucidating the role of silicon in plant defense against biotic stress, particularly against arthropod pests in agriculture and attraction of beneficial insects. Silicon confers resistance to herbivores via two described mechanisms: physical and biochemical/molecular. Until recently, studies have mainly centered on two trophic levels; the herbivore and plant. However, several studies now describe tri-trophic effects involving silicon that operate by attracting predators or parasitoids to plants under herbivore attack. Indeed, it has been demonstrated that silicon-treated, arthropod-attacked plants display increased attractiveness to natural enemies, an effect that was reflected in elevated biological control in the field. The reported relationships between soluble silicon and the jasmonic acid (JA) defense pathway, and JA and herbivore-induced plant volatiles (HIPVs) suggest that soluble silicon may enhance the production of HIPVs. Further, it is feasible that silicon uptake may affect protein expression (or modify proteins structurally) so that they can produce additional, or modify, the HIPV profile of plants. Ultimately, understanding silicon under plant ecological, physiological, biochemical, and molecular contexts will assist in fully elucidating the mechanisms behind silicon and plant response to biotic stress at both the bi- and tri-trophic levels.

Silicon: Potential to Promote Direct and Indirect Effects on Plant Defense Against Arthropod Pests in Agriculture

PubMed Central

Reynolds, Olivia L.; Padula, Matthew P.; Zeng, Rensen; Gurr, Geoff M.

2016-01-01

Silicon has generally not been considered essential for plant growth, although it is well recognized that many plants, particularly Poaceae, have substantial plant tissue concentrations of this element. Recently, however, the International Plant Nutrition Institute [IPNI] (2015), Georgia, USA has listed it as a “beneficial substance”. This reflects that numerous studies have now established that silicon may alleviate both biotic and abiotic stress. This paper explores the existing knowledge and recent advances in elucidating the role of silicon in plant defense against biotic stress, particularly against arthropod pests in agriculture and attraction of beneficial insects. Silicon confers resistance to herbivores via two described mechanisms: physical and biochemical/molecular. Until recently, studies have mainly centered on two trophic levels; the herbivore and plant. However, several studies now describe tri-trophic effects involving silicon that operate by attracting predators or parasitoids to plants under herbivore attack. Indeed, it has been demonstrated that silicon-treated, arthropod-attacked plants display increased attractiveness to natural enemies, an effect that was reflected in elevated biological control in the field. The reported relationships between soluble silicon and the jasmonic acid (JA) defense pathway, and JA and herbivore-induced plant volatiles (HIPVs) suggest that soluble silicon may enhance the production of HIPVs. Further, it is feasible that silicon uptake may affect protein expression (or modify proteins structurally) so that they can produce additional, or modify, the HIPV profile of plants. Ultimately, understanding silicon under plant ecological, physiological, biochemical, and molecular contexts will assist in fully elucidating the mechanisms behind silicon and plant response to biotic stress at both the bi- and tri-trophic levels. PMID:27379104

Micro/nano electro mechanical systems for practical applications

NASA Astrophysics Data System (ADS)

Esashi, Masayoshi

2009-09-01

Silicon MEMS as electrostatically levitated rotational gyroscope, 2D optical scanner and wafer level packaged devices as integrated capacitive pressure sensor and MEMS switch are described. MEMS which use non-silicon materials as diamond, PZT, conductive polymer, CNT (carbon nano tube), LTCC with electrical feedthrough, SiC (silicon carbide) and LiNbO3 for multi-probe data storage, multi-column electron beam lithography system, probe card for wafer-level burn-in test, mould for glass press moulding and SAW wireless passive sensor respectively are also described.

Defects with deep levels in a semiconductor structure of a photoelectric converter of solar energy with an antireflection film of porous silicon

NASA Astrophysics Data System (ADS)

Tregulov, V. V.; Litvinov, V. G.; Ermachikhin, A. V.

2017-11-01

Defects in a semiconductor structure of a photoelectric converter of solar energy based on a p-n junction with an antireflection film of porous silicon on the front surface have been studied by current deeplevel transient spectroscopy. An explanation of the influence of thickness of a porous-silicon film formed by electrochemical etching on the character of transformation of defects with deep levels and efficiency of solarenergy conversion is proposed.

Tuning of structural, light emission and wetting properties of nanostructured copper oxide-porous silicon matrix formed on electrochemically etched copper-coated silicon substrates

NASA Astrophysics Data System (ADS)

Naddaf, M.

2017-01-01

Matrices of copper oxide-porous silicon nanostructures have been formed by electrochemical etching of copper-coated silicon surfaces in HF-based solution at different etching times (5-15 min). Micro-Raman, X-ray diffraction and X-ray photoelectron spectroscopy results show that the nature of copper oxide in the matrix changes from single-phase copper (I) oxide (Cu2O) to single-phase copper (II) oxide (CuO) on increasing the etching time. This is accompanied with important variation in the content of carbon, carbon hydrides, carbonyl compounds and silicon oxide in the matrix. The matrix formed at the low etching time (5 min) exhibits a single broad "blue" room-temperature photoluminescence (PL) band. On increasing the etching time, the intensity of this band decreases and a much stronger "red" PL band emerges in the PL spectra. The relative intensity of this band with respect to the "blue" band significantly increases on increasing the etching time. The "blue" and "red" PL bands are attributed to Cu2O and porous silicon of the matrix, respectively. In addition, the water contact angle measurements reveal that the hydrophobicity of the matrix surface can be tuned from hydrophobic to superhydrophobic state by controlling the etching time.

Marine fouling release silicone/carbon nanotube nanocomposite coatings: on the importance of the nanotube dispersion state.

PubMed

Beigbeder, Alexandre; Mincheva, Rosica; Pettitt, Michala E; Callow, Maureen E; Callow, James A; Claes, Michael; Dubois, Philippe

2010-05-01

The present work reports on the influence of the dispersion quality of multiwall carbon nanotubes (MWCNTs) in a silicone matrix on the marine fouling-release performance of the resulting nanocomposite coatings. A first set of coatings filled with different nanofiller contents was prepared by the dilution of a silicone/MWCNTs masterbatch within a hydrosilylation-curing polydimethylsiloxane resin. The fouling-release properties of the nanocomposite coatings were studied through laboratory assays with the marine alga (seaweed) Ulva, a common fouling species. As reported previously (see Ref. [19]), the addition of a small (0.05%) amount of carbon nanotubes substantially improves the fouling-release properties of the silicone matrix. This paper shows that this improvement is dependent on the amount of filler, with a maximum obtained with 0.1 wt% of multiwall carbon nanotubes (MWCNTs). The method of dispersion of carbon nanotubes in the silicone matrix is also shown to significantly (p = 0.05) influence the fouling-release properties of the coatings. Dispersing 0.1% MWCNTs using the masterbatch approach yielded coatings with circa 40% improved fouling-release properties over those where MWCNTs were dispersed directly in the polymeric matrix. This improvement is directly related to the state of nanofiller dispersion within the cross-linked silicone coating.

Experimental testing on free vibration behaviour for silicone rubbers proposed within lumbar disc prosthesis.

PubMed

Rotaru, Iuliana; Bujoreanu, Carmen; Bele, Adrian; Cazacu, Maria; Olaru, Dumitru

2014-09-01

This research was focused on the damping capacity study of two types of silicone rubbers proposed as layers within total lumbar disc prostheses of ball-and-socket model. In order to investigate the damping capacity, the two silicone rubber types mainly differing by the molecular mass of polymeric matrix and the filler content, as was emphasized by scanning electron microscopy and differential scanning calorimetry, were subjected to free vibration testing. Using an adapted experimental installation, three kinds of damping testing were realised: tests without samples and tests with three samples of each type of silicone rubber (69 ShA and 99 ShA). The free vibration tests were performed at a frequency of about 6 Hz using a weight of 11.8 kg. The relative damping coefficient was determined by measuring of two successive amplitudes on the vibrogram and calculating of the logarithmic decrement. The test results with silicone rubber samples showed a relative damping coefficient of 0.058 and respectively 0.077, whilst test results without samples showed a relative damping coefficient of 0.042. These silicone rubbers were found to have acceptable damping properties to be used as layers placed inside the prosthetic components. Copyright © 2014 Elsevier B.V. All rights reserved.

New polyurethane/docosane microcapsules as phase-change materials for thermal energy storage.

PubMed

Felix De Castro, Paula; Shchukin, Dmitry G

2015-07-27

Polyurethane microcapsules were prepared by mini-emulsion interfacial polymerization for encapsulation of phase-change material (n-docosane) for energy storage. Three steps were followed with the aim to optimize synthesis conditions of the microcapsules. First, polyurethane microcapsules based on silicone oil core as an inert template with different silicone oil/poly(ethylene glycol)/4,4'-diphenylmethane diisocyanate wt % ratio were synthesized. The surface morphology of the capsules was analyzed by scanning electronic microscopy (SEM) and the chemical nature of the shell was monitored by Fourier transform infrared spectroscopy (FT-IR). Capsules with the silicone oil/poly(ethylene glycol)/4,4'-diphenylmethane diisocyanate 10/20/20 wt % ratio showed the best morphological features and shell stability with average particle size about 4 μm, and were selected for the microencapsulation of the n-docosane. In the second stage, half of the composition of silicone oil was replaced with n-docosane and, finally, the whole silicone oil content was replaced with docosane following the same synthetic procedure used for silicone oil containing capsules. Thermal and cycling stability of the capsules were investigated by thermal gravimetric analysis (TGA) and the phase-change behavior was evaluated by differential scanning calorimetry (DSC). © 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Effect of impurities and processing on silicon solar cells. Volume 1: Characterization methods for impurities in silicon and impurity effects data base

NASA Technical Reports Server (NTRS)

Hopkins, R. H.; Davis, J. R.; Rohatgi, A.; Campbell, R. B.; Blais, P. D.; Rai-Choudhury, P.; Stapleton, R. E.; Mollenkopf, H. C.; Mccormick, J. R.

1980-01-01

Two major topics are treated: methods to measure and evaluate impurity effects in silicon and comprehensive tabulations of data derived during the study. Discussions of deep level spectroscopy, detailed dark I-V measurements, recombination lifetime determination, scanned laser photo-response, conventional solar cell I-V techniques, and descriptions of silicon chemical analysis are presented and discussed. The tabulated data include lists of impurity segregation coefficients, ingot impurity analyses and estimated concentrations, typical deep level impurity spectra, photoconductive and open circuit decay lifetimes for individual metal-doped ingots, and a complete tabulation of the cell I-V characteristics of nearly 200 ingots.

A study of beryllium and beryllium-lithium complexes in single crystal silicon

NASA Technical Reports Server (NTRS)

Crouch, R. K.; Robertson, J. B.; Gilmer, T. E., Jr.

1972-01-01

When beryllium is thermally diffused into silicon, it gives rise to acceptor levels 191 MeV and 145 meV above the valence band. Quenching and annealing studies indicate that the 145-MeV level is due to a more complex beryllium configuration than the 191-MeV level. When lithium is thermally diffused into a beryllium-doped silicon sample, it produces two acceptor levels at 106 MeV and 81 MeV. Quenching and annealing studies indicate that these levels are due to lithium forming a complex with the defects responsible for the 191-MeV and 145-MeV beryllium levels, respectively. Electrical measurements imply that the lithium impurity ions are physically close to the beryllium impurity atoms. The ground state of the 106-MeV beryllium level is split into two levels, presumably by internal strains. Tentative models are proposed.

A special purpose silicon compiler for designing supercomputing VLSI systems

NASA Technical Reports Server (NTRS)

Venkateswaran, N.; Murugavel, P.; Kamakoti, V.; Shankarraman, M. J.; Rangarajan, S.; Mallikarjun, M.; Karthikeyan, B.; Prabhakar, T. S.; Satish, V.; Venkatasubramaniam, P. R.

1991-01-01

Design of general/special purpose supercomputing VLSI systems for numeric algorithm execution involves tackling two important aspects, namely their computational and communication complexities. Development of software tools for designing such systems itself becomes complex. Hence a novel design methodology has to be developed. For designing such complex systems a special purpose silicon compiler is needed in which: the computational and communicational structures of different numeric algorithms should be taken into account to simplify the silicon compiler design, the approach is macrocell based, and the software tools at different levels (algorithm down to the VLSI circuit layout) should get integrated. In this paper a special purpose silicon (SPS) compiler based on PACUBE macrocell VLSI arrays for designing supercomputing VLSI systems is presented. It is shown that turn-around time and silicon real estate get reduced over the silicon compilers based on PLA's, SLA's, and gate arrays. The first two silicon compiler characteristics mentioned above enable the SPS compiler to perform systolic mapping (at the macrocell level) of algorithms whose computational structures are of GIPOP (generalized inner product outer product) form. Direct systolic mapping on PLA's, SLA's, and gate arrays is very difficult as they are micro-cell based. A novel GIPOP processor is under development using this special purpose silicon compiler.

Effects of phosphorus on the electrical characteristics of plasma deposited hydrogenated amorphous silicon carbide thin films

NASA Astrophysics Data System (ADS)

Alcinkaya, Burak; Sel, Kivanc

2018-01-01

The properties of phosphorus doped hydrogenated amorphous silicon carbide (a-SiCx:H) thin films, that were deposited by plasma enhanced chemical vapor deposition technique with four different carbon contents (x), were analyzed and compared with those of the intrinsic a-SiCx:H thin films. The carbon contents of the films were determined by X-ray photoelectron spectroscopy. The thickness and optical energies, such as Tauc, E04 and Urbach energies, of the thin films were determined by UV-Visible transmittance spectroscopy. The electrical properties of the films, such as conductivities and activation energies were analyzed by temperature dependent current-voltage measurements. Finally, the conduction mechanisms of the films were investigated by numerical analysis, in which the standard transport mechanism in the extended states and the nearest neighbor hopping mechanism in the band tail states were taken into consideration. It was determined that, by the effect of phosphorus doping the dominant conduction mechanism was the standard transport mechanism for all carbon contents.

Porosity and thickness effect of porous silicon layer on photoluminescence spectra

NASA Astrophysics Data System (ADS)

Husairi, F. S.; Eswar, K. A.; Guliling, Muliyadi; Khusaimi, Z.; Rusop, M.; Abdullah, S.

2018-05-01

The porous silicon nanostructures was prepared by electrochemical etching of p-type silicon wafer. Porous silicon prepared by using different current density and fix etching time with assistance of halogen lamp. The physical structure of porous silicon measured by the parameters used which know as experimental factor. In this work, we select one of those factors to correlate which optical properties of porous silicon. We investigated the surface morphology by using Surface Profiler (SP) and photoluminescence using Photoluminescence (PL) spectrometer. Different physical characteristics of porous silicon produced when current density varied. Surface profiler used to measure the thickness of porous and the porosity calculated using mass different of silicon. Photoluminescence characteristics of porous silicon depend on their morphology because the size and distribution of pore its self will effect to their exciton energy level. At J=30 mA/cm2 the shorter wavelength produced and it followed the trend of porosity with current density applied.

The toxicity, in vitro, of silicon carbide whiskers.

PubMed

Vaughan, G L; Jordan, J; Karr, S

1991-10-01

To mouse cells in culture, SiC whiskers (SiCW) and asbestos are similarly cytotoxic, disrupting cell membranes and killing cells. Both shorten cell generation time, increase the rate of DNA synthesis, increase total cell DNA content, and cause a loss in growth control often associated with malignant cellular transformation. Within the narrow size range of materials examined, the amount of damage appeared to be more a function of the number of whiskers present than of their size. Silicon carbide whiskers, if mishandled, may pose a serious health hazard to humans.

Purification of silicon for photovoltaic applications

NASA Astrophysics Data System (ADS)

Delannoy, Yves

2012-12-01

Solar grade silicon, as a starting material for crystallization to produce solar cells, is discussed here in terms of impurities whose maximum content is estimated from recent literature and conferences. A review of the production routes for each category of solar-grade silicon (undoped, compensated or heavily compensated) is proposed with emphasis on the metallurgical route. Some recent results are proposed concerning segregation, showing that directional solidification systems can be used for solidification even at high solidification rate (15 cm/h). Results on inductive plasma purification, where boron is evacuated as HBO in a gas phase blown from an inductive plasma torch, are shown to apply as well to arc plasmas and purification by moist gas. Special attention is paid to the history of impurities in the purification processes, showing that impure auxiliary phases (silicon tetrachloride, slag, aluminum, etc.) often need their own purification process to enable their recycling, which has to be considered to evaluate the cost (financial, energetic and environmental) of the purification route.

Silicon oxynitride films deposited by reactive high power impulse magnetron sputtering using nitrous oxide as a single-source precursor

DOE Office of Scientific and Technical Information (OSTI.GOV)

Hänninen, Tuomas, E-mail: tuoha@ifm.liu.se; Schmidt, Susann; Jensen, Jens

2015-09-15

Silicon oxynitride thin films were synthesized by reactive high power impulse magnetron sputtering of silicon in argon/nitrous oxide plasmas. Nitrous oxide was employed as a single-source precursor supplying oxygen and nitrogen for the film growth. The films were characterized by elastic recoil detection analysis, x-ray photoelectron spectroscopy, x-ray diffraction, x-ray reflectivity, scanning electron microscopy, and spectroscopic ellipsometry. Results show that the films are silicon rich, amorphous, and exhibit a random chemical bonding structure. The optical properties with the refractive index and the extinction coefficient correlate with the film elemental composition, showing decreasing values with increasing film oxygen and nitrogen content.more » The total percentage of oxygen and nitrogen in the films is controlled by adjusting the gas flow ratio in the deposition processes. Furthermore, it is shown that the film oxygen-to-nitrogen ratio can be tailored by the high power impulse magnetron sputtering-specific parameters pulse frequency and energy per pulse.« less

Subband Structure and Effective Mass in the Inversion Layer of a Strain Si-Based Alloy P-Type MOSFET.

PubMed

Chen, Kuan-Ting; Fan, Jun Wei; Chang, Shu-Tong; Lin, Chung-Yi

2015-03-01

In this paper, the subband structure and effective mass of an Si-based alloy inversion layer in a PMOSFET are studied theoretically. The strain condition considered in our calculations is the intrinsic strain resulting from growth of the silicon-carbon alloy on a (001) Si substrate and mechanical uniaxial stress. The quantum confinement effect resulting from the vertically effective electric field was incorporated into the k · p calculation. The distinct effective mass, such as the quantization effective mass and the density-of-states (DOS) effective mass, as well as the subband structure of the silicon-carbon alloy inversion layer for a PMOSFET under substrate strain and various effective electric field strengths, were all investigated. Ore results show that subband structure of relaxed silicon-carbon alloys with low carbon content are almost the same as silicon. We find that an external stress applied parallel to the channel direction can efficiently reduce the effective mass along the channel direction, thus producing hole mobility enhancement.

Tin induced a-Si crystallization in thin films of Si-Sn alloys

NASA Astrophysics Data System (ADS)

Neimash, V.; Poroshin, V.; Shepeliavyi, P.; Yukhymchuk, V.; Melnyk, V.; Kuzmich, A.; Makara, V.; Goushcha, A. O.

2013-12-01

Effects of tin doping on crystallization of amorphous silicon were studied using Raman scattering, Auger spectroscopy, scanning electron microscopy, and X-ray fluorescence techniques. Formation of silicon nanocrystals (2-4 nm in size) in the amorphous matrix of Si1-xSnx, obtained by physical vapor deposition of the components in vacuum, was observed at temperatures around 300 °C. The aggregate volume of nanocrystals in the deposited film of Si1-xSnx exceeded 60% of the total film volume and correlated well with the tin content. Formation of structures with ˜80% partial volume of the nanocrystalline phase was also demonstrated. Tin-induced crystallization of amorphous silicon occurred only around the clusters of metallic tin, which suggested the crystallization mechanism involving an interfacial molten Si:Sn layer.

Anneal-induced enhancement of refractive index and hardness of silicophosphate glasses containing six-fold coordinated silicon

DOE Office of Scientific and Technical Information (OSTI.GOV)

Zeng, Huidan, E-mail: hdzeng@ecust.edu.cn; Jiang, Qi; Li, Xiang

2015-01-12

A considerable number of optical devices have significantly benefited from the development of phosphate glasses as substrate materials. Introducing silica into sodium phosphate is an effective method to enhance its mechanical and optical properties. Through annealing treatment, the tetrahedral silicon oxide network structure (Si{sup (4)}) can be transformed into an octahedral structure (Si{sup (6)}) with more constraints. Here, we use high-temperature Raman and Nuclear Magnetic Resonance to reveal the mechanism of transformation between the Si{sup (4)} and Si{sup (6)} silicon oxide structures. The increase of the Si{sup (6)} content results in the phosphate glasses having higher refractive index and hardness.more » Based on this, the refractive index contribution of SiO{sub 6} is obtained.« less

Solar silicon via improved and expanded metallurgical silicon technology

NASA Technical Reports Server (NTRS)

Hunt, L. P.; Dosaj, V. D.; Mccormick, J. R.

1977-01-01

A completed preliminary survey of silica sources indicates that sufficient quantities of high-purity quartz are available in the U.S. and Canada to meet goals. Supply can easily meet demand for this little-sought commodity. Charcoal, as a reductant for silica, can be purified to a sufficient level by high-temperature fluorocarbon treatment and vacuum processing. High-temperature treatment causes partial graphitization which can lead to difficulty in smelting. Smelting of Arkansas quartz and purified charcoal produced kilogram quantities of silicon having impurity levels generally much lower than in MG-Si. Half of the goal was met of increasing the boron resistivity from 0.03 ohm-cm in metallurgical silicon to 0.3 ohm-cm in solar silicon. A cost analysis of the solidification process indicate $3.50-7.25/kg Si for the Czochralski-type process and $1.50-4.25/kg Si for the Bridgman-type technique.

Determination of the overall migration from silicone baking moulds into simulants and food using 1H-NMR techniques.

PubMed

Helling, Ruediger; Mieth, Anja; Altmann, Stefan; Simat, Thomas Joachim

2009-03-01

Different silicone baking moulds (37 samples) were characterized with respect to potential migrating substances using 1H-NMR, RP-HPLC-UV/ELSD and GC techniques. In all cases cyclic organosiloxane oligomers with the formula [Si(CH3)2-O]n were identified (n = 6 ... 50). Additionally, linear, partly hydroxyl-terminated organosiloxanes HO-[Si(CH3)2-O]n-H (n = 7 ... 20) were found in 13 samples. No substances other than siloxanes could be detected, meaning the migrants mainly consist of organopolysiloxanes. Based on this knowledge, a 1H-NMR quantification method for siloxanes was established for the analysis of both simulants and foodstuffs. Validation of the 1H-NMR method gave suitable performance characteristics: limit of detection 8.7 mg kg(-1) oil, coefficient of variation 7.8% (at a level of 1.0 mg kg(-1) food). Migration studies were carried out with simulants (olive oil, isooctane, ethanol (95%), Tenax) as well as preparation of different cakes. From the 1st to 10th experiment, siloxane migration into cakes only slightly decreased, with a significant dependence on fat content. Migration never exceeded a level of 21 mg kg(-1) (3 mg dm(-2)) and was, therefore, well below the overall migration limit of 60 mg kg(-1) (10 mg dm(-2)). However, migration behaviour into simulants differed completely from these results.

Distinct physiological responses of tomato and cucumber plants in silicon-mediated alleviation of cadmium stress

PubMed Central

Wu, Jiawen; Guo, Jia; Hu, Yanhong; Gong, Haijun

2015-01-01

The alleviative effects of silicon (Si) on cadmium (Cd) toxicity were investigated in cucumber (Cucumis sativus L.) and tomato (Solanum lycopersicum L.) grown hydroponically. The growth of both plant species was inhibited by 100 μM Cd, but Si application counteracted the adverse effects on growth. Si application significantly decreased the Cd concentrations in shoots of both species and roots of cucumber. The root-to-shoot transport of Cd was depressed by added Si in tomato whereas it was increased by added Si in cucumber. The total content of organic acids was decreased in tomato leaves but increased in cucumber roots and leaves by Si application under Cd stress. Si application also increased the cell wall polysaccharide levels in the roots of both species under Cd toxicity. Si-mediated changes in levels of organic acids and cell wall polysaccharides might contribute to the differences in Cd transport in the two species. In addition, Si application also mitigated Cd-induced oxidative damage in both species. The results indicate that there were different mechanisms for Si-mediated decrease in shoot Cd accumulation: in tomato, Si supply decreased root-to-shoot Cd transport; whereas in cucumber, Si supply reduced the Cd uptake by roots. It is suggested that Si-mediated Cd tolerance is associated with different physiological responses in tomato and cucumber plants. PMID:26136764

Application Of Optical Processing For Growth Of Silicon Dioxide

DOEpatents

Sopori, Bhushan L.

1997-06-17

A process for producing a silicon dioxide film on a surface of a silicon substrate. The process comprises illuminating a silicon substrate in a substantially pure oxygen atmosphere with a broad spectrum of visible and infrared light at an optical power density of from about 3 watts/cm.sup.2 to about 6 watts/cm.sup.2 for a time period sufficient to produce a silicon dioxide film on the surface of the silicon substrate. An optimum optical power density is about 4 watts/cm.sup.2 for growth of a 100.ANG.-300.ANG. film at a resultant temperature of about 400.degree. C. Deep level transient spectroscopy analysis detects no measurable impurities introduced into the silicon substrate during silicon oxide production and shows the interface state density at the SiO.sub.2 /Si interface to be very low.

Synergistic influence of Al, Ni, Bi and Sn addition to a zinc bath upon growth kinetics and the structure of coatings

NASA Astrophysics Data System (ADS)

Kania, H.; Liberski, P.

2012-05-01

In this article the authors have analysed the current knowledge about the influence of alloy additions used in galvanizing baths. The optimum concentration of Al, Ni, Bi and Sn addition has been established. Some tests have been conducted to determine the synergistic effect of the addition of AlNiBiSn to a zinc bath upon the structure and growth kinetics of coatings. The structure of the coatings obtained on steel with low silicon contents and on Sandelin steel as well as their chemical composition have been revealed. It has been established that the addition of AlNiBiSn helps to reduce excessive growth of coating on Sandelin steel. The chemical composition and the structure of the coating on Sandelin steel are similar to the chemical composition and structure obtained on steel with regular silicon contents.

Metallurgical reactions in two industrially strip-cast aluminum-manganese alloys

NASA Astrophysics Data System (ADS)

Hansen, V.; Andersson, B.; Tibballs, J. E.; Gjønnes, J.

1995-08-01

Precipitation, phase transformation, subgrain growth, and recrystallization that occur during heat treatment of two strip-cast, cold-rolled, high manganese aluminum alloys have been studied mainly by transmission electron microscopy (TEM). The alloys differ in silicon content. The isothermal heat treatments have been performed in a salt bath at temperatures between 330 °C and 530 °C for times up to 1000 hours. Size distributions for each type of secondary particle have been determined. After short annealing times, small quasicrystals precipitated and subsequently transformed to α phase. The densities of these precipitates controlled dislocation movement and regulated subgrain sizes. Prolonged heating resulted in peritectoid reactions to Al6Mn or Al12Mn. Recrystallization, which is associated with the formation of Al12Mn, is advanced by increasing the silicon content; the nucleation and growth of Al12Mn occurs only at the expense of other phases that stabilize the subgrain network.

Effects of inorganic substances on water splitting in ion-exchange membranes; II. Optimal contents of inorganic substances in preparing bipolar membranes.

PubMed

Kang, Moon-Sung; Choi, Yong-Jin; Moon, Seung-Hyeon

2004-05-15

An approach to enhancing the water-splitting performance of bipolar membranes (BPMs) is introducing an inorganic substance at the bipolar (BP) junction. In this study, the immobilization of inorganic matters (i.e., iron hydroxides and silicon compounds) at the BP junction and the optimum concentration have been investigated. To immobilize these inorganic matters, novel methods (i.e., electrodeposition of the iron hydroxide and processing of the sol-gel to introduce silicon groups at the BP junction) were suggested. At optimal concentrations, the immobilized inorganic matters significantly enhanced the water-splitting fluxes, indicating that they provide alternative paths for water dissociation, but on the other hand possibly reduce the polarization of water molecules between the sulfonic acid and quaternary ammonium groups at high contents. Consequently, the amount of inorganic substances introduced should be optimized to obtain the maximum water splitting in the BPM.

Equivalences between refractive index and equilibrium water content of conventional and silicone hydrogel soft contact lenses from automated and manual refractometry.

PubMed

González-Méijome, José M; López-Alemany, Antonio; Lira, Madalena; Almeida, José B; Oliveira, M Elisabete C D Real; Parafita, Manuel A

2007-01-01

The purpose of the present study was to develop mathematical relationships that allow obtaining equilibrium water content and refractive index of conventional and silicone hydrogel soft contact lenses from refractive index measures obtained with automated refractometry or equilibrium water content measures derived from manual refractometry, respectively. Twelve HEMA-based hydrogels of different hydration and four siloxane-based polymers were assayed. A manual refractometer and a digital refractometer were used. Polynomial models obtained from the sucrose curves of equilibrium water content against refractive index and vice-versa were used either considering the whole range of sucrose concentrations (16-100% equilibrium water content) or a range confined to the equilibrium water content of current soft contact lenses (approximately 20-80% equilibrium water content). Values of equilibrium water content measured with the Atago N-2E and those derived from the refractive index measurement with CLR 12-70 by the applications of sucrose-based models displayed a strong linear correlation (r2 = 0.978). The same correlations were obtained when the models are applied to obtain refractive index values from the Atago N-2E and compared with those (values) given by the CLR 12-70 (r2 = 0.978). No significantly different results are obtained between models derived from the whole range of the sucrose solution or the model limited to the normal range of soft contact lens hydration. Present results will have implications for future experimental and clinical research regarding normal hydration and dehydration experiments with hydrogel polymers, and particularly in the field of contact lenses. 2006 Wiley Periodicals, Inc.

Origin of dislocation luminescence centers and their reorganization in p-type silicon crystal subjected to plastic deformation and high temperature annealing.

PubMed

Pavlyk, Bohdan; Kushlyk, Markiyan; Slobodzyan, Dmytro

2017-12-01

Changes of the defect structure of silicon p-type crystal surface layer under the influence of plastic deformation and high temperature annealing in oxygen atmosphere were investigated by deep-level capacitance-modulation spectroscopy (DLCMS) and IR spectroscopy of molecules and atom vibrational levels. Special role of dislocations in the surface layer of silicon during the formation of its energy spectrum and rebuilding the defective structure was established. It is shown that the concentration of linear defects (N ≥ 10 4  cm -2 ) enriches surface layer with electrically active complexes (dislocation-oxygen, dislocation-vacancy, and dislocation-interstitial atoms of silicon) which are an effective radiative recombination centers.

Porous silicon confers bioactivity to polycaprolactone composites in vitro.

PubMed

Henstock, J R; Ruktanonchai, U R; Canham, L T; Anderson, S I

2014-04-01

Silicon is an essential element for healthy bone development and supplementation with its bioavailable form (silicic acid) leads to enhancement of osteogenesis both in vivo and in vitro. Porous silicon (pSi) is a novel material with emerging applications in opto-electronics and drug delivery which dissolves to yield silicic acid as the sole degradation product, allowing the specific importance of soluble silicates for biomaterials to be investigated in isolation without the elution of other ionic species. Using polycaprolactone as a bioresorbable carrier for porous silicon microparticles, we found that composites containing pSi yielded more than twice the amount of bioavailable silicic acid than composites containing the same mass of 45S5 Bioglass. When incubated in a simulated body fluid, the addition of pSi to polycaprolactone significantly increased the deposition of calcium phosphate. Interestingly, the apatites formed had a Ca:P ratio directly proportional to the silicic acid concentration, indicating that silicon-substituted hydroxyapatites were being spontaneously formed as a first order reaction. Primary human osteoblasts cultured on the surface of the composite exhibited peak alkaline phosphatase activity at day 14, with a proportional relationship between pSi content and both osteoblast proliferation and collagen production over 4 weeks. Culturing the composite with J744A.1 murine macrophages demonstrated that porous silicon does not elicit an immune response and may even inhibit it. Porous silicon may therefore be an important next generation biomaterial with unique properties for applications in orthopaedic tissue engineering.

The Effects of Iron Oxidation State on Clay Swelling,

DTIC Science & Technology

1983-03-07

swelling, montmorillonite , nontronite, smectite, water, DLVO theory, surface charge, dissolution, methods, aluminum, silicon, inert atmosphere. 2G...that many physical properties of bulk water are changed when it is adsorbed between layers of Na4- montmorillonite (e.g., Oster and Low, 1964; Kolaian...Na+- montmorillonite accounted for about 13% of the total water content in the free-swelling state. We can therefore express the total water content

Reassessment of the recombination parameters of chromium in n- and p-type crystalline silicon and chromium-boron pairs in p-type crystalline silicon

DOE Office of Scientific and Technical Information (OSTI.GOV)

Sun, Chang, E-mail: chang.sun@anu.edu.au; Rougieux, Fiacre E.; Macdonald, Daniel

2014-06-07

Injection-dependent lifetime spectroscopy of both n- and p-type, Cr-doped silicon wafers with different doping levels is used to determine the defect parameters of Cr{sub i} and CrB pairs, by simultaneously fitting the measured lifetimes with the Shockley-Read-Hall model. A combined analysis of the two defects with the lifetime data measured on both n- and p-type samples enables a significant tightening of the uncertainty ranges of the parameters. The capture cross section ratios k = σ{sub n}/σ{sub p} of Cr{sub i} and CrB are determined as 3.2 (−0.6, +0) and 5.8 (−3.4, +0.6), respectively. Courtesy of a direct experimental comparison of the recombinationmore » activity of chromium in n- and p-type silicon, and as also suggested by modelling results, we conclude that chromium has a greater negative impact on carrier lifetimes in p-type silicon than n-type silicon with similar doping levels.« less

DOE Office of Scientific and Technical Information (OSTI.GOV)

Koryazhkina, M. N., E-mail: mahavenok@mail.ru; Tikhov, S. V.; Gorshkov, O. N.

It is shown that the formation of Au nanoparticles at the insulator–silicon interface in structures with a high density of surface states results in a shift of the Fermi-level pinning energy at this interface towards the valence-band ceiling in silicon and in increasing the surface-state density at energies close to the Fermi level. In this case, a band with a peak at 0.85 eV arises on the photosensivity curves of the capacitor photovoltage, which is explained by the photoemission of electrons from the formed Au-nanoparticle electron states near the valence-band ceiling in silicon.

Minimizing the bimetallic bending for cryogenic metal optics based on electroless nickel

NASA Astrophysics Data System (ADS)

Kinast, Jan; Hilpert, Enrico; Lange, Nicolas; Gebhardt, Andreas; Rohloff, Ralf-Rainer; Risse, Stefan; Eberhardt, Ramona; Tünnermann, Andreas

2014-07-01

Ultra-precise metal optics are key components of sophisticated scientific instruments in astronomy and space applications. Especially for cryogenic applications, a detailed knowledge and the control of the coefficient of thermal expansion (CTE) of the used materials are essential. Reflective optical components in IR- and NIR-instruments primarily consist of the aluminum alloy Al6061. The achievable micro-roughness of diamond machined and directly polished Al6061 does not fulfill the requirements for applications in the visible spectral range. Electroless nickel enables the reduction of the mirror surface roughness to the sub-nm range by polishing. To minimize the associated disadvantageous bimetallic effect, a novel material combination for cryogenic mirrors based on electroless nickel and hypereutectic aluminum-silicon is investigated. An increasing silicon content of the aluminum material decreases the CTE in the temperature range to be considered. This paper shows the CTE for aluminum materials containing about 42 wt% silicon (AlSi42) and for electroless nickel with a phosphorous content ranging from 10.5 to 13 %. The CTE differ to about 0.5 × 10-6 K-1 in a temperature range from -185 °C (LN2) to 100 °C. Besides, the correlations between the chemical compositions of aluminum-silicon materials and electroless nickel are shown. A metrology setup for cryo-interferometry was developed to analyze the remaining and reversible shape deviation at cryogenic temperatures. Changes could be caused by different CTE, mounting forces and residual stress conditions. In the electroless nickel layer, the resulting shape deviation can be preshaped by deterministic correction processes such as magnetorheological finishing (MRF) at room temperature.

Comparative study of initial stages of copper immersion deposition on bulk and porous silicon

NASA Astrophysics Data System (ADS)

Bandarenka, Hanna; Prischepa, Sergey L.; Fittipaldi, Rosalba; Vecchione, Antonio; Nenzi, Paolo; Balucani, Marco; Bondarenko, Vitaly

2013-02-01

Initial stages of Cu immersion deposition in the presence of hydrofluoric acid on bulk and porous silicon were studied. Cu was found to deposit both on bulk and porous silicon as a layer of nanoparticles which grew according to the Volmer-Weber mechanism. It was revealed that at the initial stages of immersion deposition, Cu nanoparticles consisted of crystals with a maximum size of 10 nm and inherited the orientation of the original silicon substrate. Deposited Cu nanoparticles were found to be partially oxidized to Cu2O while CuO was not detected for all samples. In contrast to porous silicon, the crystal orientation of the original silicon substrate significantly affected the sizes, density, and oxidation level of Cu nanoparticles deposited on bulk silicon.

Large On-Chip Amplification in Silicon via Forward Stimulated Brillouin Scattering

DOE Office of Scientific and Technical Information (OSTI.GOV)

Kittlaus, Eric; Shin, Heedeuk; Rakich, Peter

2015-10-15

Strong Brillouin coupling has only recently been realized in silicon using a new class of op- tomechanical waveguides that yield both optical and phononic con nement. Despite these major advances, appreciable Brillouin ampli cation has yet to be observed in silicon. Using new membrane- suspended silicon waveguide we report large Brillouin ampli cation for the rst time, reaching levels greater than 5 dB for modest pump powers, and demonstrate a record low (5 mW) threshold for net ampli cation. This work represents a crucial advance necessary to realize high-performance Brillouin lasers and ampli ers in silicon.

Design rules for RCA self-aligned silicon-gate CMOS/SOS process

NASA Technical Reports Server (NTRS)

1977-01-01

The CMOS/SOS design rules prepared by the RCA Solid State Technology Center (SSTC) are described. These rules specify the spacing and width requirements for each of the six design levels, the seventh level being used to define openings in the passivation level. An associated report, entitled Silicon-Gate CMOS/SOS Processing, provides further insight into the usage of these rules.

Low temperature synthesis of silicon nitride thin films deposited by VHF/RF PECVD for gas barrier application

NASA Astrophysics Data System (ADS)

Lee, Jun S.; Shin, Kyung S.; Sahu, B. B.; Han, Jeon G.

2015-09-01

In this work, silicon nitride (SiNx) thin films were deposited on polyethylene terephthalate (PET) substrates as barrier layers by plasma enhanced chemical vapor deposition (PECVD) system. Utilizing a combination of very high-frequency (VHF 40.68 MHz) and radio-frequency (RF 13.56 MHz) plasmas it was possible to adopt PECVD deposition at low-temperature using the precursors: Hexamethyldisilazane (HMDSN) and nitrogen. To investigate relationship between film properties and plasma properties, plasma diagnostic using optical emission spectroscopy (OES) was performed along with the film analysis using Fourier transform infrared spectroscopy (FT-IR) and X-ray photoelectron spectroscopy (XPS). OES measurements show that there is dominance of the excited N2 and N2+ emissions with increase in N2 dilution, which has a significant impact on the film properties. It was seen that all the deposited films contains mainly silicon nitride with a small content of carbon and no signature of oxygen. Interestingly, upon air exposure, films have shown the formation of Si-O bonds in addition to the Si-N bonds. Measurements and analysis reveals that SiNx films deposited with high content of nitrogen with HMDSN plasma can have lower gas barrier properties as low as 7 . 3 ×10-3 g/m2/day. Also at Chiang Mai University.

Application of optical processing for growth of silicon dioxide

DOEpatents

Sopori, B.L.

1997-06-17

A process for producing a silicon dioxide film on a surface of a silicon substrate is disclosed. The process comprises illuminating a silicon substrate in a substantially pure oxygen atmosphere with a broad spectrum of visible and infrared light at an optical power density of from about 3 watts/cm{sup 2} to about 6 watts/cm{sup 2} for a time period sufficient to produce a silicon dioxide film on the surface of the silicon substrate. An optimum optical power density is about 4 watts/cm{sup 2} for growth of a 100{angstrom}-300{angstrom} film at a resultant temperature of about 400 C. Deep level transient spectroscopy analysis detects no measurable impurities introduced into the silicon substrate during silicon oxide production and shows the interface state density at the SiO{sub 2}/Si interface to be very low. 1 fig.

Precision calibration of the silicon doping level in gallium arsenide epitaxial layers

NASA Astrophysics Data System (ADS)

Mokhov, D. V.; Berezovskaya, T. N.; Kuzmenkov, A. G.; Maleev, N. A.; Timoshnev, S. N.; Ustinov, V. M.

2017-10-01

An approach to precision calibration of the silicon doping level in gallium arsenide epitaxial layers is discussed that is based on studying the dependence of the carrier density in the test GaAs layer on the silicon- source temperature using the Hall-effect and CV profiling techniques. The parameters are measured by standard or certified measuring techniques and approved measuring instruments. It is demonstrated that the use of CV profiling for controlling the carrier density in the test GaAs layer at the thorough optimization of the measuring procedure ensures the highest accuracy and reliability of doping level calibration in the epitaxial layers with a relative error of no larger than 2.5%.

Internal energy deposition with silicon nanoparticle-assisted laser desorption/ionization (SPALDI) mass spectrometry

NASA Astrophysics Data System (ADS)

Dagan, Shai; Hua, Yimin; Boday, Dylan J.; Somogyi, Arpad; Wysocki, Ronald J.; Wysocki, Vicki H.

2009-06-01

The use of silicon nanoparticles for laser desorption/ionization (LDI) is a new appealing matrix-less approach for the selective and sensitive mass spectrometry of small molecules in MALDI instruments. Chemically modified silicon nanoparticles (30 nm) were previously found to require very low laser fluence in order to induce efficient LDI, which raised the question of internal energy deposition processes in that system. Here we report a comparative study of internal energy deposition from silicon nanoparticles to previously explored benzylpyridinium (BP) model compounds during LDI experiments. The internal energy deposition in silicon nanoparticle-assisted laser desorption/ionization (SPALDI) with different fluorinated linear chain modifiers (decyl, hexyl and propyl) was compared to LDI from untreated silicon nanoparticles and from the organic matrix, [alpha]-cyano-4-hydroxycinnamic acid (CHCA). The energy deposition to internal vibrational modes was evaluated by molecular ion survival curves and indicated that the ions produced by SPALDI have an internal energy threshold of 2.8-3.7 eV. This is slightly lower than the internal energy induced using the organic CHCA matrix, with similar molecular survival curves as previously reported for LDI off silicon nanowires. However, the internal energy associated with desorption/ionization from the silicon nanoparticles is significantly lower than that reported for desorption/ionization on silicon (DIOS). The measured survival yields in SPALDI gradually decrease with increasing laser fluence, contrary to reported results for silicon nanowires. The effect of modification of the silicon particle surface with semifluorinated linear chain silanes, including fluorinated decyl (C10), fluorinated hexyl (C6) and fluorinated propyl (C3) was explored too. The internal energy deposited increased with a decrease in the length of the modifier alkyl chain. Unmodified silicon particles exhibited the highest analyte internal energy deposition. These findings may suggest a role of the modifier as a moderator in the energy dissipation and relaxation process. The relatively low internal energy content of SPALDI-produced ions indicates that this is a "soft" desorption technique, with potential advantages in the analysis of labile compounds.

Soil Does Not Explain Monodominance in a Central African Tropical Forest

PubMed Central

Peh, Kelvin S. -H.; Sonké, Bonaventure; Lloyd, Jon; Quesada, Carlos A.; Lewis, Simon L.

2011-01-01

Background Soil characteristics have been hypothesised as one of the possible mechanisms leading to monodominance of Gilbertiodendron dewerei in some areas of Central Africa where higher-diversity forest would be expected. However, the differences in soil characteristics between the G. dewevrei-dominated forest and its adjacent mixed forest are still poorly understood. Here we present the soil characteristics of the G. dewevrei forest and quantify whether soil physical and chemical properties in this monodominant forest are significantly different from the adjacent mixed forest. Methodology/Principal Findings We sampled top soil (0–5, 5–10, 10–20, 20–30 cm) and subsoil (150–200 cm) using an augur in 6 × 1 ha areas of intact central Africa forest in SE Cameroon, three independent patches of G. dewevrei-dominated forest and three adjacent areas (450–800 m apart), all chosen to be topographically homogeneous. Analysis – subjected to Bonferroni correction procedure – revealed no significant differences between the monodominant and mixed forests in terms of soil texture, median particle size, bulk density, pH, carbon (C) content, nitrogen (N) content, C:N ratio, C:total NaOH-extractable P ratio and concentrations of labile phosphorous (P), inorganic NaOH-extractable P, total NaOH-extractable P, aluminium, barium, calcium, copper, iron, magnesium, manganese, molybdenum, nickel, potassium, selenium, silicon, sodium and zinc. Prior to Bonferroni correction procedure, there was a significant lower level of silicon concentration found in the monodominant than mixed forest deep soil; and a significant lower level of nickel concentration in the monodominant than mixed forest top soil. Nevertheless, these were likely to be the results of multiple tests of significance. Conclusions/Significance Our results do not provide clear evidence of soil mediation for the location of monodominant forests in relation to adjacent mixed forests. It is also likely that G. dewevrei does not influence soil chemistry in the monodominant forests. PMID:21347320

Soil does not explain monodominance in a Central African tropical forest.

PubMed

Peh, Kelvin S-H; Sonké, Bonaventure; Lloyd, Jon; Quesada, Carlos A; Lewis, Simon L

2011-02-10

Soil characteristics have been hypothesised as one of the possible mechanisms leading to monodominance of Gilbertiodendron dewerei in some areas of Central Africa where higher-diversity forest would be expected. However, the differences in soil characteristics between the G. dewevrei-dominated forest and its adjacent mixed forest are still poorly understood. Here we present the soil characteristics of the G. dewevrei forest and quantify whether soil physical and chemical properties in this monodominant forest are significantly different from the adjacent mixed forest. We sampled top soil (0-5, 5-10, 10-20, 20-30 cm) and subsoil (150-200 cm) using an augur in 6 × 1 ha areas of intact central Africa forest in SE Cameroon, three independent patches of G. dewevrei-dominated forest and three adjacent areas (450-800 m apart), all chosen to be topographically homogeneous. Analysis--subjected to Bonferroni correction procedure--revealed no significant differences between the monodominant and mixed forests in terms of soil texture, median particle size, bulk density, pH, carbon (C) content, nitrogen (N) content, C:N ratio, C:total NaOH-extractable P ratio and concentrations of labile phosphorous (P), inorganic NaOH-extractable P, total NaOH-extractable P, aluminium, barium, calcium, copper, iron, magnesium, manganese, molybdenum, nickel, potassium, selenium, silicon, sodium and zinc. Prior to Bonferroni correction procedure, there was a significant lower level of silicon concentration found in the monodominant than mixed forest deep soil; and a significant lower level of nickel concentration in the monodominant than mixed forest top soil. Nevertheless, these were likely to be the results of multiple tests of significance. Our results do not provide clear evidence of soil mediation for the location of monodominant forests in relation to adjacent mixed forests. It is also likely that G. dewevrei does not influence soil chemistry in the monodominant forests.

Advanced process control and novel test methods for PVD silicon and elastomeric silicone coatings utilized on ion implant disks, heatsinks and selected platens

DOE Office of Scientific and Technical Information (OSTI.GOV)

Springer, J.; Allen, B.; Wriggins, W.

Coatings play multiple key roles in the proper functioning of mature and current ion implanters. Batch and serial implanters require strategic control of elemental and particulate contamination which often includes scrutiny of the silicon surface coatings encountering direct beam contact. Elastomeric Silicone Coatings must accommodate wafer loading and unloading as well as direct backside contact during implant plus must maintain rigid elemental and particulate specifications. The semiconductor industry has had a significant and continuous effort to obtain ultra-pure silicon coatings with sustained process performance and long life. Low particles and reduced elemental levels for silicon coatings are a major requirementmore » for process engineers, OEM manufacturers, and second source suppliers. Relevant data will be presented. Some emphasis and detail will be placed on the structure and characteristics of a relatively new PVD Silicon Coating process that is very dense and homogeneous. Wear rate under typical ion beam test conditions will be discussed. The PVD Silicon Coating that will be presented here is used on disk shields, wafer handling fingers/fences, exclusion zones of heat sinks, beam dumps and other beamline components. Older, legacy implanters can now provide extended process capability using this new generation PVD silicon - even on implanter systems that were shipped long before the advent of silicon coating for contamination control. Low particles and reduced elemental levels are critical performance criteria for the silicone elastomers used on disk heatsinks and serial implanter platens. Novel evaluation techniques and custom engineered tools are used to investigate the surface interaction characteristics of multiple Elastomeric Silicone Coatings currently in use by the industry - specifically, friction and perpendicular stiction. These parameters are presented as methods to investigate the critical wafer load and unload function. Unique tools and test methods have been developed that deliver accurate and repeatable data, which will be described.« less

Advanced process control and novel test methods for PVD silicon and elastomeric silicone coatings utilized on ion implant disks, heatsinks and selected platens

NASA Astrophysics Data System (ADS)

Springer, J.; Allen, B.; Wriggins, W.; Kuzbyt, R.; Sinclair, R.

2012-11-01

Coatings play multiple key roles in the proper functioning of mature and current ion implanters. Batch and serial implanters require strategic control of elemental and particulate contamination which often includes scrutiny of the silicon surface coatings encountering direct beam contact. Elastomeric Silicone Coatings must accommodate wafer loading and unloading as well as direct backside contact during implant plus must maintain rigid elemental and particulate specifications. The semiconductor industry has had a significant and continuous effort to obtain ultra-pure silicon coatings with sustained process performance and long life. Low particles and reduced elemental levels for silicon coatings are a major requirement for process engineers, OEM manufacturers, and second source suppliers. Relevant data will be presented. Some emphasis and detail will be placed on the structure and characteristics of a relatively new PVD Silicon Coating process that is very dense and homogeneous. Wear rate under typical ion beam test conditions will be discussed. The PVD Silicon Coating that will be presented here is used on disk shields, wafer handling fingers/fences, exclusion zones of heat sinks, beam dumps and other beamline components. Older, legacy implanters can now provide extended process capability using this new generation PVD silicon - even on implanter systems that were shipped long before the advent of silicon coating for contamination control. Low particles and reduced elemental levels are critical performance criteria for the silicone elastomers used on disk heatsinks and serial implanter platens. Novel evaluation techniques and custom engineered tools are used to investigate the surface interaction characteristics of multiple Elastomeric Silicone Coatings currently in use by the industry - specifically, friction and perpendicular stiction. These parameters are presented as methods to investigate the critical wafer load and unload function. Unique tools and test methods have been developed that deliver accurate and repeatable data, which will be described.

Characterization of nanostructured CuO-porous silicon matrix formed on copper-coated silicon substrate via electrochemical etching

NASA Astrophysics Data System (ADS)

Naddaf, M.; Mrad, O.; Al-zier, A.

2014-06-01

A pulsed anodic etching method has been utilized for nanostructuring of a copper-coated p-type (100) silicon substrate, using HF-based solution as electrolyte. Scanning electron microscopy reveals the formation of a nanostructured matrix that consists of island-like textures with nanosize grains grown onto fiber-like columnar structures separated with etch pits of grooved porous structures. Spatial micro-Raman scattering analysis indicates that the island-like texture is composed of single-phase cupric oxide (CuO) nanocrystals, while the grooved porous structure is barely related to formation of porous silicon (PS). X-ray diffraction shows that both the grown CuO nanostructures and the etched silicon layer have the same preferred (220) orientation. Chemical composition obtained by means of X-ray photoelectron spectroscopic (XPS) analysis confirms the presence of the single-phase CuO on the surface of the patterned CuO-PS matrix. As compared to PS formed on the bare silicon substrate, the room-temperature photoluminescence (PL) from the CuO-PS matrix exhibits an additional weak `blue' PL band as well as a blue shift in the PL band of PS (S-band). This has been revealed from XPS analysis to be associated with the enhancement in the SiO2 content as well as formation of the carbonyl group on the surface in the case of the CuO-PS matrix.

Qualitative identification of rigid gas permeable contact lens materials by densitometry.

PubMed

Arce, C G; Schuman, P D; Schuman, W P

1999-10-01

We describe a practical method to qualitatively identify polymethylmethacrylate (PMMA) and rigid gas permeable (RGP) contact lens materials. By progressive dilution of a saturated saline solution made with distilled or tap water and sodium chloride, we recorded comparative densitometry of rigid contact lens materials using a small hydrometer or by liquid displacement. The method was sensitive enough to separate the polymethylmethacrylate, all silicon-methacrylates, and all but two fluorine-containing silicon-methacrylates. The hydrometer had a precision of three decimals rounded to the nearest 0.005. There was only one RGP product that could have been confused with the PMMA material. Most silicon-methacrylates had lower densities than fluorine containing silicon-methacrylates. Only four of 25 products under 1.117 gm/cm3 contained fluorine. Densitometry with a hydrometer is an effective non-destructive method to identify RGP materials and to verify their quality. The method is easier when lens blanks are tested, but in spite of differences in shape, size, and weight, densitometry may also be used with new or used contact lenses. Its simplicity and low cost makes densitometry feasible for any contact lens laboratory or clinic to use on a routine basis. Only silicon-methacrylates had an inverse relationship between density and oxygen permeability. As the silicon content of the contact lens increases, the Dk increases and the density decreases.

From amorphous to nanocrystalline: the effect of nanograins in amorphous matrix on the thermal conductivity of hot-wire chemical-vapor deposited silicon films

DOE PAGES

Kearney, B. T.; Jugdersuren, B.; Queen, D. R.; ...

2017-12-28

Here, we have measured the thermal conductivity of amorphous and nanocrystalline silicon films with varying crystalline content from 85K to room temperature. The films were prepared by the hot-wire chemical-vapor deposition, where the crystalline volume fraction is determined by the hydrogen (H2) dilution ratio to the processing silane gas (SiH4), R=H2/SiH4. We varied R from 1 to 10, where the films transform from amorphous for R < 3 to mostly nanocrystalline for larger R. Structural analyses show that the nanograins, averaging from 2 to 9nm in sizes with increasing R, are dispersed in the amorphous matrix. The crystalline volume fractionmore » increases from 0 to 65% as R increases from 1 to 10. The thermal conductivities of the two amorphous silicon films are similar and consistent with the most previous reports with thicknesses no larger than a few um deposited by a variety of techniques. The thermal conductivities of the three nanocrystalline silicon films are also similar, but are about 50-70% higher than those of their amorphous counterparts. The heat conduction in nanocrystalline silicon films can be understood as the combined contribution in both amorphous and nanocrystalline phases, where increased conduction through improved nanocrystalline percolation path outweighs increased interface scattering between silicon nanocrystals and the amorphous matrix.« less

From amorphous to nanocrystalline: the effect of nanograins in amorphous matrix on the thermal conductivity of hot-wire chemical-vapor deposited silicon films

DOE Office of Scientific and Technical Information (OSTI.GOV)

Kearney, B. T.; Jugdersuren, B.; Queen, D. R.

Here, we have measured the thermal conductivity of amorphous and nanocrystalline silicon films with varying crystalline content from 85K to room temperature. The films were prepared by the hot-wire chemical-vapor deposition, where the crystalline volume fraction is determined by the hydrogen (H2) dilution ratio to the processing silane gas (SiH4), R=H2/SiH4. We varied R from 1 to 10, where the films transform from amorphous for R < 3 to mostly nanocrystalline for larger R. Structural analyses show that the nanograins, averaging from 2 to 9nm in sizes with increasing R, are dispersed in the amorphous matrix. The crystalline volume fractionmore » increases from 0 to 65% as R increases from 1 to 10. The thermal conductivities of the two amorphous silicon films are similar and consistent with the most previous reports with thicknesses no larger than a few um deposited by a variety of techniques. The thermal conductivities of the three nanocrystalline silicon films are also similar, but are about 50-70% higher than those of their amorphous counterparts. The heat conduction in nanocrystalline silicon films can be understood as the combined contribution in both amorphous and nanocrystalline phases, where increased conduction through improved nanocrystalline percolation path outweighs increased interface scattering between silicon nanocrystals and the amorphous matrix.« less

Ginsenoside Rg1 enhances lymphatic transport of intrapulmonary silica via VEGF-C/VEGFR-3 signaling in silicotic rats.

PubMed

Yu, Jie; Mao, Lijun; Guan, Li; Zhang, Yanlin; Zhao, Jinyuan

2016-03-25

Ginsenoside Rg1, extracted mainly from Panax ginseng, has been shown to exert strong pro-angiogenic activities in vivo. But it is unclear whether ginsenoside Rg1 could promote lung lymphangiogenesis to improve lymphatic transport of intrapulmonary silica in silicotic rats. Here we investigated the effect of ginsenoside Rg1 on lymphatic transport of silica during experimental silicosis, and found that ginsenoside Rg1 treatment significantly raised the silicon content in tracheobronchial lymph nodes and serum to reduce the silicon level in lung interstitium, meanwhile increased pulmonary lymphatic vessel density by enhancing the protein and mRNA expressions of vascular endothelial growth factor-C (VEGF-C) and vascular endothelial growth factor receptor-3 (VEGFR-3). The stimulative effect of ginsenoside Rg1 on lymphatic transport of silica was actively correlated with its pro-lymphangiogenic identity. And VEGFR-3 inhibitor SAR131675 blocked these above effects of ginsenoside Rg1. These findings suggest that ginsenoside Rg1 exhibits good protective effect against lung burden of silica during experimental silicosis through improving lymphatic transport of intrapulmonary silica, which is potentially associated with the activation of VEGF-C/VEGFR-3 signaling pathway. Copyright © 2016 Elsevier Inc. All rights reserved.

Characterization of a-SiC:H films produced in a standard plasma enhanced chemical vapor deposition system for x-ray mask application

NASA Astrophysics Data System (ADS)

Jean, A.; Chaker, M.; Diawara, Y.; Leung, P. K.; Gat, E.; Mercier, P. P.; Pépin, H.; Gujrathi, S.; Ross, G. G.; Kieffer, J. C.

1992-10-01

Hydrogenated amorphous a-SixC1-x:H films with various compositions (0.2≤x≤0.8) were prepared by a radio frequency (rf 100 kHz) glow discharge decomposition of a silane and methane mixture diluted in argon. The deposition system used was a commercially available plasma enhanced chemical vapor deposition reactor allowing a high throughput (22 wafers of 4 in. diameter each run). The properties of the films such as thickness, density, and stress were investigated. The composition, including hydrogen content and Si/C ratio, and the structure of the films were systematically examined by means of several diagnostics including electron recoil detection, x-ray photoelectron spectroscopy, and infrared (IR) absorption analysis. Thickness and density of the films were dependent on the film composition, while the stress of the films was highly compressive (3×109-1×1010 dynes/cm2). Density was about 2.4 g/cm3 for nearly stoichiometric SiC films. The hydrogen content of the films was practically constant at 27 at. % over the whole investigated composition range. The IR analyses suggested that the structure of the silicon carbide films is inorganic-like over the whole range of compositions. From stoichiometric to carbon-rich films, the structure mainly consists of a tetrahedral network where silicon atoms are randomly replaced by carbon atoms and one hydrogen atom is bonded to silicon (SiH group). However, the presence of SiH2 groups and microvoids was observed in the structure of Si-rich silicon carbide films. Finally, the development of SiC membranes for x-ray lithography was presented including the control of film stress by means of rapid thermal annealing. Silicon carbide membranes of relatively high surface area (32×32 mm2) and showing high optical transparency (80%) were successfully fabricated.

Monolithically Integrated High-β Nanowire Lasers on Silicon.

PubMed

Mayer, B; Janker, L; Loitsch, B; Treu, J; Kostenbader, T; Lichtmannecker, S; Reichert, T; Morkötter, S; Kaniber, M; Abstreiter, G; Gies, C; Koblmüller, G; Finley, J J

2016-01-13

Reliable technologies for the monolithic integration of lasers onto silicon represent the holy grail for chip-level optical interconnects. In this context, nanowires (NWs) fabricated using III-V semiconductors are of strong interest since they can be grown site-selectively on silicon using conventional epitaxial approaches. Their unique one-dimensional structure and high refractive index naturally facilitate low loss optical waveguiding and optical recirculation in the active NW-core region. However, lasing from NWs on silicon has not been achieved to date, due to the poor modal reflectivity at the NW-silicon interface. We demonstrate how, by inserting a tailored dielectric interlayer at the NW-Si interface, low-threshold single mode lasing can be achieved in vertical-cavity GaAs-AlGaAs core-shell NW lasers on silicon as measured at low temperature. By exploring the output characteristics along a detection direction parallel to the NW-axis, we measure very high spontaneous emission factors comparable to nanocavity lasers (β = 0.2) and achieve ultralow threshold pump energies ≤11 pJ/pulse. Analysis of the input-output characteristics of the NW lasers and the power dependence of the lasing emission line width demonstrate the potential for high pulsation rates ≥250 GHz. Such highly efficient nanolasers grown monolithically on silicon are highly promising for the realization of chip-level optical interconnects.

Deposition of carbon-free silicon dioxide from pure hexamethyldisiloxane using an atmospheric microplasma jet

DOE Office of Scientific and Technical Information (OSTI.GOV)

Raballand, V.; Benedikt, J.; Keudell, A. von

2008-03-03

Carbon-free silicon dioxide has been deposited at room temperature by injection of pure hexamethyldisiloxane (HMDSO) into an atmospheric pressure microplasma jet from argon. At low HMDSO flow rates [<0.1 SCCM (SCCM denotes cubic centimeter per minute at STP)], the SiO{sub x}H{sub z} films contain no carbon and exhibit an oxygen to silicon ratio close to 2 according to x-ray photoelectron spectroscopy. At high HMDSO flow rates (>0.1 SCCM), SiO{sub x}C{sub y}H{sub z} films with a carbon content of up to 21% are obtained. The transition between organic to inorganic film is confirmed by Fourier transformed infrared spectroscopy. The deposition ofmore » inorganic films without oxygen admixture is explained by an ion-induced polymerization scheme of HMDSO.« less

Hot corrosion of silicon carbide and silicon nitride at 1000 C

NASA Technical Reports Server (NTRS)

Fox, Dennis S.; Jacobson, Nathan S.; Smialek, James L.

1990-01-01

The sodium sulfate hot corrosion of silicon-based ceramics at 1000 C has been extensively studied. Deposition of the sodium sulfate corrodant from combustion products is discussed in relation to sodium air impurity and sulfur fuel impurity content. Corrosion occurs by the combined processes of oxidation to form protective silica scales and dissolution of these scales to form nonprotective sodium silicates. The chemical corrosion mechanisms are presented in terms of acidic/basic dissolution of oxides in molten salts. The reactions are strongly influenced by the presence of free carbon in the ceramic. Strength reductions have been measured and are attributed to pitting in SiC and grain boundary attack in Si3N4. Initial results of burner corrosion of two ceramic matrix composites are consistent with the models developed for monolithic ceramics.

Chromium Trioxide Hole-Selective Heterocontacts for Silicon Solar Cells.

PubMed

Lin, Wenjie; Wu, Weiliang; Liu, Zongtao; Qiu, Kaifu; Cai, Lun; Yao, Zhirong; Ai, Bin; Liang, Zongcun; Shen, Hui

2018-04-25

A high recombination rate and high thermal budget for aluminum (Al) back surface field are found in the industrial p-type silicon solar cells. Direct metallization on lightly doped p-type silicon, however, exhibits a large Schottky barrier for the holes on the silicon surface because of Fermi-level pinning effect. As a result, low-temperature-deposited, dopant-free chromium trioxide (CrO x , x < 3) with high stability and high performance is first applied in a p-type silicon solar cell as a hole-selective contact at the rear surface. By using 4 nm CrO x between the p-type silicon and Ag, we achieve a reduction of the contact resistivity for the contact of Ag directly on p-type silicon. For further improvement, we utilize a CrO x (2 nm)/Ag (30 nm)/CrO x (2 nm) multilayer film on the contact between Ag and p-type crystalline silicon (c-Si) to achieve a lower contact resistance (40 mΩ·cm 2 ). The low-resistivity Ohmic contact is attributed to the high work function of the uniform CrO x film and the depinning of the Fermi level of the SiO x layer at the silicon interface. Implementing the advanced hole-selective contacts with CrO x /Ag/CrO x on the p-type silicon solar cell results in a power conversion efficiency of 20.3%, which is 0.1% higher than that of the cell utilizing 4 nm CrO x . Compared with the commercialized p-type solar cell, the novel CrO x -based hole-selective transport material opens up a new possibility for c-Si solar cells using high-efficiency, low-temperature, and dopant-free deposition techniques.

Aluminum-dependent regulation of intracellular silicon in the aquatic invertebrate Lymnaea stagnalis

PubMed Central

Desouky, Mahmoud; Jugdaohsingh, Ravin; McCrohan, Catherine R.; White, Keith N.; Powell, Jonathan J.

2002-01-01

Silicon is essential for some plants, diatoms, and sponges but, in higher animals, its endogenous regulation has not been demonstrated. Silicate ions may be natural ligands for aluminum and here we show that, in the freshwater snail (Lymnaea stagnalis), intracellular silicon seems specifically up-regulated in response to sublethal aluminum exposure. X-ray microanalysis showed that exposure of snails to low levels of aluminum led to its accumulation in lysosomal granules, accompanied by marked up-regulation of silicon. Increased lysosomal levels of silicon were a specific response to aluminum because cadmium and zinc had no such effect. Furthermore, intra-lysosomal sulfur from metallothionein and other sulfur-containing ligands was increased after exposure to cadmium and zinc but not aluminum. To ensure that these findings indicated a specific in vivo response, and not ex vivo formation of hydroxy-aluminosilicates (HAS) from added aluminum (555 μg/liter) and water-borne silicon (43 μg/liter), two further studies were undertaken. In a ligand competition assay the lability of aluminum (527 μg/liter) was completely unaffected by the presence of silicon (46 μg/liter), suggesting the absence of HAS. In addition, exogenous silicon (6.5 mg/liter), added to the water column to promote formation of HAS, caused a decrease in lysosomal aluminum accumulation, showing that uptake of HAS would not explain the loading of aluminum into lysosomal granules. These findings, and arguments on the stability, lability, and kinetics of aluminum–silicate interactions, suggest that a silicon-specific mechanism exists for the in vivo detoxification of aluminum, which provides regulatory evidence of silicon in a multicellular organism. PMID:11891333

Transition from Round to Shaped Implants in Immediate Breast Reconstruction: Our Preferred Approach and Clinical Outcomes.

PubMed

Imahiyerobo, Thomas A; Small, Kevin H; Sackeyfio, Robyn; Hoffman, Hannah; Talmor, Mia

2017-04-01

Smooth, round, silicone implants predominate device-based breast reconstruction in the USA; despite their prevalence, complications can include bottoming out, superior contour deformity, rippling, and/or lateral malposition. This complication profile increases the need for revision surgery and subsequent patient dissatisfaction. With the resurgence of shaped, textured, silicone implants in the USA, we report the senior author's success with these devices and outline a strategy to optimize outcomes in breast reconstruction surgery. A retrospective chart review was conducted on a prospectively collected IRB-approved database of nipple-sparing mastectomies (NSMs) with immediate breast reconstruction with smooth, round, silicone implants (Group A) in 2011 in comparison to textured, shaped, silicone implants (Group B) in 2012. Changes in operative technique were highlighted and extrapolated. Outcomes were reviewed. In Group A, 128 NSMs were performed in 76 patients. In Group B, 109 NSMs were performed in 59 patients. Thirteen percent of patients in Group A had direct to implant reconstruction as compared with 21% in Group B. Patients with textured, shaped implants were more likely to have acellular dermal matrix (61 vs 34%, p < 0.0001) than those with smooth, round implants. Patients who had smooth, round implants were more likely to have postoperative nipple malposition (18 vs 0%, p < 0.0001,) and rippling (29 vs 0%, p < 0.0001.) Patients with textured, shaped implants had fewer operative revision reconstructions as compared with those with smooth, round implants (36.71 vs 12.8%, p < 0.0001) Based on these results, our technique has evolved and has eight key technical modifications. With a few adaptations in surgical technique, the transition to textured, shaped, silicone devices for breast reconstruction can be seamless with superior breast contour and reduced complications/revision rates. This journal requires that authors assign a level of evidence to each article. For a full description of these Evidence-Based Medicine ratings, please refer to the Table of Contents or the online Instructions to Authors www.springer.com/00266 .

The In Vivo Pericapsular Tissue Response to Modern Polyurethane Breast Implants.

PubMed

Frame, James; Kamel, Dia; Olivan, Marcelo; Cintra, Henrique

2015-10-01

Polyurethane breast implants were first introduced by Ashley (Plast Reconstr Surg 45:421-424, 1970), with the intention of trying to reduce the high incidence of capsular contracture associated with smooth shelled, high gel bleed, silicone breast implants. The sterilization of the polyurethane foam in the early days was questionable. More recently, ethylene oxide (ETO)-sterilized polyurethane has been used in the manufacturing process and this has been shown to reduce the incidence of biofilm. The improved method of attachment of polyurethane onto the underlying high cohesive gel, barrier shell layered, silicone breast implants also encourages bio-integration. Polyurethane covered, cohesive gel, silicone implants have also been shown to reduce the incidence of other problems commonly associated with smooth or textured silicone implants, especially with reference to displacement, capsular contracture, seroma, reoperation, biofilm and implant rupture. Since the introduction of the conical polyurethane implant (Silimed, Brazil) into the United Kingdom in 2009 (Eurosurgical, UK), we have had the opportunity to review histology taken from the capsules of polyurethane implants in three women ranging from a few months to over 3 years after implantation. All implants had been inserted into virgin subfascial, extra-pectoral planes. The results add to the important previously described histological findings of Bassetto et al. (Aesthet Plast Surg 34:481-485, 2010). Five distinct layers are identified and reasons for the development of each layer are discussed. Breast capsule around polyurethane implants, in situ for fifteen and 20 years, has recently been obtained and analysed in Brazil, and the histology has been incorporated into this study. After 20 years, the polyurethane is almost undetectable and capsular contracture may appear. These findings contribute to our understanding of polyurethane implant safety, and give reasoning for a significant reduction in clinical capsular contracture rate, up to 10 years after implantation, compared to contemporary silicone implants. A more permanent matrix equivalent to polyurethane may be the solution for reducing long-term capsular contracture. This journal requires that authors assign a level of evidence to each article. For a full description of these Evidence-Based Medicine ratings, please refer to the Table of Contents or the online Instructions to Authors www.springer.com/00266 .

Silicon materials task of the low cost solar array project, part 2

NASA Technical Reports Server (NTRS)

Hopkins, R. H.; Davis, J. R.; Rai-Choudhury, P.; Blais, P. D.; Mccormick, J. R.

1976-01-01

Purity requirements for solar cell grade silicon material was developed and defined by evaluating the effects of specific impurities and impurity levels on the performance of silicon solar cells. Also, data was generated forming the basis for cost-tradeoff analyses of silicon solar cell material. Growth, evaluation, solar cell fabrication and testing was completed for the baseline boron-doped Czochralski material. Measurements indicate Cn and Mn seriously degrade cell performance, while neither Ni nor Cu produce any serious reduction in cell efficiency.

Silicon Priming Created an Enhanced Tolerance in Alfalfa (Medicago sativa L.) Seedlings in Response to High Alkaline Stress

PubMed Central

Liu, Duo; Liu, Miao; Liu, Xiao-Long; Cheng, Xian-Guo; Liang, Zheng-Wei

2018-01-01

Alkaline stress as a result of higher pH usually triggers more severe physiological damage to plants than that of saline stress with a neutral pH. In the present study, we demonstrated that silicon (Si) priming of alfalfa (Medicago sativa L.) seedlings increased their tolerance to high alkaline stress situations. Gongnong No. 1 seedlings were subjected to alkaline stress simulated by 25 mM Na2CO3 (pH 11.2). Alkaline stress greatly decreased the biomass and caused severe lodging or wilting of alfalfa seedlings. In contrast, the application of Si to alfalfa seedlings 36 h prior to the alkaline treatment significantly alleviated the damage symptoms and greatly increased the biomass and chlorophyll content. Because of being concomitant with increasing photosynthesis and water use efficiency, decreasing membrane injury and malondialdehyde content, and increasing peroxidase and catalase ascorbate activities in alfalfa leaves, thereby alleviating the triggered oxidative damage by alkaline stress to the plant. Furthermore, Si priming significantly decreased the accumulation of protein and proline content in alfalfa, thus reducing photosynthetic feedback repression. Si priming significantly accumulated more Na in the roots, but led to a decrease of Na accumulation and an increase of K accumulation in the leaves under alkaline stress. Meanwhile, Si priming decreased the accumulation of metal ions such as Mg, Fe, Mn, and Zn in the roots of alfalfa seedlings under alkaline stress. Collectively, these results suggested that Si is involved in the metabolic or physiological changes and has a potent priming effect on the alkaline tolerance of alfalfa seedlings. The present study indicated that Si priming is a new approach to improve the alkaline tolerance in alfalfa and provides increasing information for further exploration of the alkaline stress response at the molecular level in alfalfa. PMID:29896213

[Effect of silicon on translocation and morphology distribution of lead in soil-tobacco system].

PubMed

Yan, Yi-Hua; Zheng, Zi-Cheng; Li, Ting-Xuan; Zhang, Xi-Zhou; Wang, Yong

2014-10-01

Taking tobacco as test material, a pot experiment was conducted to study the effect of silicon on translocation of lead (Pb) form soil to tobacco in order to explore effective measures for reducing Pb concentration in tobacco leaf. The results showed that silicon application promoted the transformation of exchangeable Pb into Fe-Mn oxide-bound Pb in non-rhizospheric soil, and into Fe-Mn oxide-bound Pb and residual Pb in rhizospheric soil, which decreased the availability and mobility of Pb in the soil. Silicon application significantly reduced the Pb uptake of tobacco, with the content of Pb being decreased by 6.5% to 44.0% in tobacco, and 3.1% to 60.4% in leaf. Silicon application promoted the transformation of ethanol-extractable, H2O-extractable Pb and NaCl-extractable Pb into HCl-extractable Pb and residual Pb in root, stem and leaf of tobacco, which reduced the toxicity and mobility of Pb in tobacco. Silicon restricted the transportation of Pb from soil to tobacco leaf by reducing the mobility index of Pb from soil to root and the mobility index of Pb from root to stem in soil-tobacco system. Meanwhile, the mobility index of Pb from stem to leaf in soil-tobacco system showed a rising-and-falling trend with the increase of Pb application. Silicon inhibited the Pb migration from soil to tobacco leaf by reducing availability of Pb, mitigating toxicity of Pb to tobacco, and changing the distribution of Pb forms in tobacco, consequently reducing Pb concentration of tobacco leaf. These results demonstrated silicon application could be effective in reducing translocation of Pb from soil to tobacco.

Atomic-Layer-Deposited Transparent Electrodes for Silicon Heterojunction Solar Cells

DOE PAGES

Demaurex, Benedicte; Seif, Johannes P.; Smit, Sjoerd; ...

2014-11-01

We examine damage-free transparent-electrode deposition to fabricate high-efficiency amorphous silicon/crystalline silicon heterojunction solar cells. Such solar cells usually feature sputtered transparent electrodes, the deposition of which may damage the layers underneath. Using atomic layer deposition, we insert thin protective films between the amorphous silicon layers and sputtered contacts and investigate their effect on device operation. We find that a 20-nm-thick protective layer suffices to preserve, unchanged, the amorphous silicon layers beneath. Insertion of such protective atomic-layer-deposited layers yields slightly higher internal voltages at low carrier injection levels. However, we identify the presence of a silicon oxide layer, formed during processing,more » between the amorphous silicon and the atomic-layer-deposited transparent electrode that acts as a barrier, impeding hole and electron collection.« less

Graphitized silicon carbide microbeams: wafer-level, self-aligned graphene on silicon wafers

NASA Astrophysics Data System (ADS)

Cunning, Benjamin V.; Ahmed, Mohsin; Mishra, Neeraj; Ranjbar Kermany, Atieh; Wood, Barry; Iacopi, Francesca

2014-08-01

Currently proven methods that are used to obtain devices with high-quality graphene on silicon wafers involve the transfer of graphene flakes from a growth substrate, resulting in fundamental limitations for large-scale device fabrication. Moreover, the complex three-dimensional structures of interest for microelectromechanical and nanoelectromechanical systems are hardly compatible with such transfer processes. Here, we introduce a methodology for obtaining thousands of microbeams, made of graphitized silicon carbide on silicon, through a site-selective and wafer-scale approach. A Ni-Cu alloy catalyst mediates a self-aligned graphitization on prepatterned SiC microstructures at a temperature that is compatible with silicon technologies. The graphene nanocoating leads to a dramatically enhanced electrical conductivity, which elevates this approach to an ideal method for the replacement of conductive metal films in silicon carbide-based MEMS and NEMS devices.

Ribbon growing method and apparatus

NASA Technical Reports Server (NTRS)

Morrison, Andrew D. (Inventor)

1989-01-01

A method and apparatus are described which facilitate the growing of silicon ribbon. A container for molten silicon has a pair of passages in its bottom through which filaments extend to a level above the molten silicon, so as the filaments are pulled up they drag up molten silicon to form a ribbon. A pair of guides surround the filaments along most of the height of the molten silicon, so that the filament contacts only the upper portion of the melt. This permits a filament to be used which tends to contaminate the melt if it is in long term contact with the melt. This arrangement also enables a higher melt to be used without danger that the molten silicon will run out of any bottom hole.

Silicon nanostructures for cancer diagnosis and therapy.

PubMed

Peng, Fei; Cao, Zhaohui; Ji, Xiaoyuan; Chu, Binbin; Su, Yuanyuan; He, Yao

2015-01-01

The emergence of nanotechnology suggests new and exciting opportunities for early diagnosis and therapy of cancer. During the recent years, silicon-based nanomaterials featuring unique properties have received great attention, showing high promise for myriad biological and biomedical applications. In this review, we will particularly summarize latest representative achievements on the development of silicon nanostructures as a powerful platform for cancer early diagnosis and therapy. First, we introduce the silicon nanomaterial-based biosensors for detecting cancer markers (e.g., proteins, tumor-suppressor genes and telomerase activity, among others) with high sensitivity and selectivity under molecular level. Then, we summarize in vitro and in vivo applications of silicon nanostructures as efficient nanoagents for cancer therapy. Finally, we discuss the future perspective of silicon nanostructures for cancer diagnosis and therapy.

Hydrogenated amorphous silicon formation by flux control and hydrogen effects on the growth mechanism

NASA Astrophysics Data System (ADS)

Toyoda, H.; Sugai, H.; Kato, K.; Yoshida, A.; Okuda, T.

1986-06-01

The composition of particle flux to deposit hydrogenated amorphous silicon films in a glow discharge is controlled by a combined electrostatic-magnetic deflection technique. As a result, the films are formed firstly without hydrogen ion flux, secondly by neutral flux only, and thirdly by all species fluxes. Comparison of these films reveals the significant role of hydrogen in the surface reactions. Hydrogen breaks the Si-Si bond, decreases the sticking probability of the Si atom, and replaces the SiH bond by a SiH2 bond to increase the hydrogen content of the films.

Analysis of Silicones Released from Household Items and Baby Articles by Direct Analysis in Real Time-Mass Spectrometry

NASA Astrophysics Data System (ADS)

Gross, Jürgen H.

2015-03-01

Direct analysis in real time-mass spectrometry (DART-MS) enables screening of articles of daily use made of polydimethylsiloxanes (PDMS), commonly known as silicone rubber, to assess their tendency to release low molecular weight silicone oligomers. DART-MS analyses were performed on a Fourier transform ion cyclotron resonance (FT-ICR) mass spectrometer. Flexible silicone baking molds, a watch band, and a dough scraper, as baby articles different brands of pacifiers, nipples, and a teething ring have been examined. While somewhat arbitrarily chosen, the set can be regarded as representative of household items, baby articles, and other objects made of silicone rubber. For comparison, two brands of silicone septa and as blanks a glass slide and a latex pacifier were included. Differences between the objects were mainly observed in terms of molecular weight distribution and occasional release of other compounds in addition to PDMS. Other than that, all objects made of silicone rubber released significant amounts of PDMS during DART analysis. To provide a coarse quantification, a calibration based on silicone oil was established, which delivered PDMS losses from 20 μg to >100 μg during the 16-s period per measurement. Also, the extraction of baking molds in rapeseed oil demonstrated a PDMS release at the level of 1 μg mg-1. These findings indicate a potential health hazard from frequent or long-term use of such items. This work does not intend to blame certain brands of such articles. Nonetheless, a higher level of awareness of this source of daily silicone intake is suggested.

Analysis of silicones released from household items and baby articles by direct analysis in real time-mass spectrometry.

PubMed

Gross, Jürgen H

2015-03-01

Direct analysis in real time-mass spectrometry (DART-MS) enables screening of articles of daily use made of polydimethylsiloxanes (PDMS), commonly known as silicone rubber, to assess their tendency to release low molecular weight silicone oligomers. DART-MS analyses were performed on a Fourier transform ion cyclotron resonance (FT-ICR) mass spectrometer. Flexible silicone baking molds, a watch band, and a dough scraper, as baby articles different brands of pacifiers, nipples, and a teething ring have been examined. While somewhat arbitrarily chosen, the set can be regarded as representative of household items, baby articles, and other objects made of silicone rubber. For comparison, two brands of silicone septa and as blanks a glass slide and a latex pacifier were included. Differences between the objects were mainly observed in terms of molecular weight distribution and occasional release of other compounds in addition to PDMS. Other than that, all objects made of silicone rubber released significant amounts of PDMS during DART analysis. To provide a coarse quantification, a calibration based on silicone oil was established, which delivered PDMS losses from 20 μg to >100 μg during the 16-s period per measurement. Also, the extraction of baking molds in rapeseed oil demonstrated a PDMS release at the level of 1 μg mg(-1). These findings indicate a potential health hazard from frequent or long-term use of such items. This work does not intend to blame certain brands of such articles. Nonetheless, a higher level of awareness of this source of daily silicone intake is suggested.

Nanotribological effects of silicone type, silicone deposition level, and surfactant type on human hair using atomic force microscopy.

PubMed

La Torre, Carmen; Bhushan, Bharat

2006-01-01

The atomic/friction force microscope (AFM/FFM) has recently become an important tool for studying the micro/nanoscale structure and tribological properties of human hair. Of particular interest to hair and beauty care science is how common hair-care materials, such as conditioner, deposit onto and change hair's tribological properties, since these properties are closely tied to product performance. Since a conditioner is a complex network of many different ingredients (including silicones for lubrication and cationic surfactants for static control and gel network formulation), studying the effects of these individual components can give insight into the significance each has on hair properties. In this study, AFM/FFM is used to conduct nanotribological studies of surface roughness, friction force, and adhesive forces as a function of silicone type, silicone deposition level, and cationic surfactant type. Changes in the coefficient of friction as a result of soaking hair in de-ionized water are also discussed.

Impurities in silicon solar cells

NASA Technical Reports Server (NTRS)

Hopkins, R. H.

1985-01-01

Metallic impurities, both singly and in combinations, affect the performance of silicon solar cells. Czochralski silicon web crystals were grown with controlled additions of secondary impurities. The primary electrical dopants were boron and phosphorus. The silicon test ingots were grown under controlled and carefully monitored conditions from high-purity charge and dopant material to minimize unintentional contamination. Following growth, each crystal was characterized by chemical, microstructural, electrical, and solar cell tests to provide a detailed and internally consistent description of the relationships between silicon impurity concentration and solar cell performance. Deep-level spectroscopy measurements were used to measure impurity concentrations at levels below the detectability of other techniques and to study thermally-induced changes in impurity activity. For the majority of contaminants, impurity-induced performance loss is due to a reduction of the base diffusion length. From these observations, a semi-empirical model which predicts cell performance as a function of metal impurity concentration was formulated. The model was then used successfully to predict the behavior of solar cells bearing as many as 11 different impurities.

Infrared-transmission spectra and hydrogen content of hydrogenated amorphous silicon

NASA Astrophysics Data System (ADS)

Hu, Yuehi; Chen, Guanghua; Wu, Yueying; Yin, Shengyi; Gao, Zhuo; Wang, Qing; Song, Xuemei; Deng, Jinxiang

2004-05-01

In this paper, two kinds of methods of calculating the hydrogen content of a-Si:H thin film by means of the wagging mode and the stretching modes of infrared-transmission spectra, are investigated. The reason for the difference in these two calculation results is analyzed. If the contents of SiH2 and (SiH2) n are indicated in terms of a structure factor F=(/840+/880)//2000, it is shown that the calculation results obtained from the two different methods are almost equal when the refractive index n is approximately 3.4 or the fitting thickness is between 0.71 and 0.89 μm in the case of a small F. It is shown that the ways of fabrication of thin film can influences silicon-hydrogen bonding configuration of a-Si: H film, and different ways of fabrication can lead to different contents of SiH2 and (SiH2) n . The uniformity of the thin film with a big F is bad. In this case, there is great difference between the thickness measured by the SurfCom408A surface profile apparatus and the thickness obtained by fitting the fringes; and the hydrogen contents of a-Si:H films obtained by means of the wagging mode and the stretching modes are different, too. But the fabrication of the MWECR CVD assisted by CAT CVD can effectively restrain the formation of SiH2 and (SiH2) n .

Oxidation of silicon with a 5 eV O(-) beam

NASA Technical Reports Server (NTRS)

Hecht, M. H.; Orient, O. J.; Chutjian, A.; Vasquez, R. P.

1989-01-01

A silicon wafer has been oxidized at room temperature in vacuum using a pure, ground-state beam of O(-) ions. The beam was of sufficiently low energy that no displacement damage or implantation was energetically possible. The resulting SiO2 films were analyzed with X-ray photoelectron spectroscopy. A logarithmic dependence of oxide thickness on dose was observed, with an extrapolated oxidation efficiency of unity for the clean silicon surface. A distinct initial oxidation phase was observed, with an anomalously high level of silicon suboxides. In addition, the valence-band offset between the silicon and the oxide was unusually small, suggesting a large interfacial dipole.

Effects of silicon on Oryza sativa L. seedling roots under simulated acid rain stress.

PubMed

Ju, Shuming; Yin, Ningning; Wang, Liping; Zhang, Cuiying; Wang, Yukun

2017-01-01

Silicon (Si) has an important function in reducing the damage of environmental stress on plants. Acid rain is a serious abiotic stress factor, and Si can alleviate the stress induced by acid rain on plants. Based on these assumptions, we investigated the effects of silicon on the growth, root phenotype, mineral element contents, hydrogen peroxide (H2O2) and antioxidative enzymes of rice (Oryza sativa L.) seedling roots under simulated acid rain (SAR) stress. The results showed that the combined or single effects of Si and/or SAR on rice roots depend on the concentration of Si and the pH of the SAR. The combined or single effects of a low or moderate concentration of Si (1.0 or 2.0 mM) and light SAR (pH 4.0) enhanced the growth of rice roots, and the combined effects were stronger than those of the single treatment. A high concentration of Si (4.0 mM) or severe SAR (pH 2.0) exerted deleterious effects. The incorporation of Si (1.0, 2.0 or 4.0 mM) into SAR with pH 3.0 or 2.0 promoted the rice root growth, decreased the H2O2 content, increased the Si concentration and the superoxide dismutase (SOD), catalase (CAT), peroxidase (POD) and ascorbate peroxidase (APX) activities, maintained the balance of mineral element (K, Ca, Mg, Fe, Zn, and Cu) concentrations in the roots of rice seedlings compared with SAR alone. The alleviatory effects observed with a moderate concentration of Si (2.0 mM) were better than the effects obtained with a low or high concentration of Si (1.0 or 4.0 mM). The observed effects were due to disruptions in the absorption and utilization of mineral nutrients and impacts on the activity of antioxidant enzymes in roots, and this conclusion suggests that the degree of rice root damage caused by acid rain might be attributed to not only acid rain but also the level of Si in the soil.

Effects of silicon on Oryza sativa L. seedling roots under simulated acid rain stress

PubMed Central

Wang, Liping; Zhang, Cuiying; Wang, Yukun

2017-01-01

Silicon (Si) has an important function in reducing the damage of environmental stress on plants. Acid rain is a serious abiotic stress factor, and Si can alleviate the stress induced by acid rain on plants. Based on these assumptions, we investigated the effects of silicon on the growth, root phenotype, mineral element contents, hydrogen peroxide (H2O2) and antioxidative enzymes of rice (Oryza sativa L.) seedling roots under simulated acid rain (SAR) stress. The results showed that the combined or single effects of Si and/or SAR on rice roots depend on the concentration of Si and the pH of the SAR. The combined or single effects of a low or moderate concentration of Si (1.0 or 2.0 mM) and light SAR (pH 4.0) enhanced the growth of rice roots, and the combined effects were stronger than those of the single treatment. A high concentration of Si (4.0 mM) or severe SAR (pH 2.0) exerted deleterious effects. The incorporation of Si (1.0, 2.0 or 4.0 mM) into SAR with pH 3.0 or 2.0 promoted the rice root growth, decreased the H2O2 content, increased the Si concentration and the superoxide dismutase (SOD), catalase (CAT), peroxidase (POD) and ascorbate peroxidase (APX) activities, maintained the balance of mineral element (K, Ca, Mg, Fe, Zn, and Cu) concentrations in the roots of rice seedlings compared with SAR alone. The alleviatory effects observed with a moderate concentration of Si (2.0 mM) were better than the effects obtained with a low or high concentration of Si (1.0 or 4.0 mM). The observed effects were due to disruptions in the absorption and utilization of mineral nutrients and impacts on the activity of antioxidant enzymes in roots, and this conclusion suggests that the degree of rice root damage caused by acid rain might be attributed to not only acid rain but also the level of Si in the soil. PMID:28291806

Passivation of InGaAs(001)-(2 × 4) by Self-Limiting Chemical Vapor Deposition of a Silicon Hydride Control Layer.

PubMed

Edmonds, Mary; Kent, Tyler; Chagarov, Evgueni; Sardashti, Kasra; Droopad, Ravi; Chang, Mei; Kachian, Jessica; Park, Jun Hong; Kummel, Andrew

2015-07-08

A saturated Si-Hx seed layer for gate oxide or contact conductor ALD has been deposited via two separate self-limiting and saturating CVD processes on InGaAs(001)-(2 × 4) at substrate temperatures of 250 and 350 °C. For the first self-limiting process, a single silicon precursor, Si3H8, was dosed at a substrate temperature of 250 °C, and XPS results show the deposited silicon hydride layer saturated at about 4 monolayers of silicon coverage with hydrogen termination. STS results show the surface Fermi level remains unpinned following the deposition of the saturated silicon hydride layer, indicating the InGaAs surface dangling bonds are electrically passivated by Si-Hx. For the second self-limiting process, Si2Cl6 was dosed at a substrate temperature of 350 °C, and XPS results show the deposited silicon chloride layer saturated at about 2.5 monolayers of silicon coverage with chlorine termination. Atomic hydrogen produced by a thermal gas cracker was subsequently dosed at 350 °C to remove the Si-Cl termination by replacing with Si-H termination as confirmed by XPS, and STS results confirm the saturated Si-Hx bilayer leaves the InGaAs(001)-(2 × 4) surface Fermi level unpinned. Density function theory modeling of silicon hydride surface passivation shows an Si-Hx monolayer can remove all the dangling bonds and leave a charge balanced surface on InGaAs.

Nitrogen doped silicon-carbon multilayer protective coatings on carbon obtained by TVA method

NASA Astrophysics Data System (ADS)

Ciupina, Victor; Vasile, Eugeniu; Porosnicu, Corneliu; Lungu, Cristian P.; Vladoiu, Rodica; Jepu, Ionut; Mandes, Aurelia; Dinca, Virginia; Caraiane, Aureliana; Nicolescu, Virginia; Cupsa, Ovidiu; Dinca, Paul; Zaharia, Agripina

2017-08-01

Protective nitrogen doped Si-C multilayer coatings on carbon, used to improve the oxidation resistance of carbon, were obtained by Thermionic Vacuum Arc (TVA) method. The initial carbon layer having a thickness of 100nm has been deposed on a silicon substrate in the absence of nitrogen, and then a 3nm Si thin film to cover carbon layer was deposed. Further, seven Si and C layers were alternatively deposed in the presence of nitrogen ions, each having a thickness of 40nm. In order to form silicon carbide at the interface between silicon and carbon layers, all carbon, silicon and nitrogen ions energy has increased up to 150eV . The characterization of microstructure and electrical properties of as-prepared N-Si-C multilayer structures were done using Transmission Electron Microscopy (TEM, STEM) techniques, Thermal Desorption Spectroscopy (TDS) and electrical measurements. Oxidation protection of carbon is based on the reaction between oxygen and silicon carbide, resulting in SiO2, SiO and CO2, and also by reaction involving N, O and Si, resulting in silicon oxynitride (SiNxOy) with a continuously variable composition, and on the other hand, since nitrogen acts as a trapping barrier for oxygen. To perform electrical measurements, 80% silver filled two-component epoxy-based glue ohmic contacts were attached on the N-Si-C samples. Electrical conductivity was measured in constant current mode. The experimental data show the increase of conductivity with the increase of the nitrogen content. To explain the temperature behavior of electrical conductivity we assumed a thermally activated electric transport mechanism.

Effect of power on growth of nanocrystalline silicon films deposited by VHF PECVD technique for solar cell applications

NASA Astrophysics Data System (ADS)

Juneja, Sucheta; Verma, Payal; Savelyev, Dmitry A.; Khonina, Svetlana N.; Sudhakar, S.; Kumar, Sushil

2016-04-01

An investigation of the effect of power on the deposition of nanocrystalline silicon thin films were carried out using a gaseous mixture of silane and hydrogen in the 60MHz assisted VHF plasma enhanced chemical vapor deposition (PECVD) technique. The power was varied from 10 to 50 watt maintaining all other parameters constant. Corresponding layer properties w.r.t. material microstructure, optical, hydrogen content and electrical transport are studied in detail. The structural properties have been studied by Raman spectroscopy and x-ray diffraction (XRD). The presence of nano-sized crystals and their morphology have been investigated using atomic force microscopy (AFM). The role of bonded hydrogen content in the films have been studied from the results of Fourier transform infrared spectroscopy. It was observed from the results that with increase in power, crystalline volume fraction increases and crystallite size changes from 4 to 9 nm. The optical band gap varies from 1.7 to 2.1eV due to quantum confinement effect and which further can be explained with reduced hydrogen content. These striking features of nc-Si films can be used to fabricate stable thin film solar cells.

Impact of the silicon substrate resistivity and growth condition on the deep levels in Ni-Au/AlN/Si MIS Capacitors

NASA Astrophysics Data System (ADS)

Wang, Chong; Simoen, Eddy; Zhao, Ming; Li, Wei

2017-10-01

Deep levels formed under different growth conditions of a 200 nm AlN buffer layer on B-doped Czochralski Si(111) substrates with different resistivity were investigated by deep-level transient spectroscopy (DLTS) on metal-insulator-semiconductor capacitors. Growth-temperature-dependent Al diffusion in the Si substrate was derived from the free carrier density obtained by capacitance-voltage measurement on samples grown on p- substrates. The DLTS spectra revealed a high concentration of point and extended defects in the p- and p+ silicon substrates, respectively. This indicated a difference in the electrically active defects in the silicon substrate close to the AlN/Si interface, depending on the B doping concentration.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Dumpala, Ravikumar; Nano Functional Materials Technology Centre, Department of Physics, Indian Institute of Technology Madras, Chennai 600036; Kumar, N.

Tribo-layer formation and frictional characteristics of the SiC ball were studied with the sliding test against nanocrystalline diamond coating under atmospheric test conditions. Unsteady friction coefficients in the range of 0.04 to 0.1 were observed during the tribo-test. Friction and wear characteristics were found to be influenced by the formation of cohesive tribo-layer (thickness ∼ 1.3 μm) in the wear track of nanocrystalline diamond coating. Hardness of the tribo-layer was measured using nanoindentation technique and low hardness of ∼ 1.2 GPa was observed. The presence of silicon and oxygen in the tribo-layer was noticed by the energy dispersive spectroscopy mappingmore » and the chemical states of the silicon were analyzed using X-ray photoelectron spectroscopy. Large amount of oxygen content in the tribo-layer indicated tribo-oxidation wear mechanism. - Highlights: • Sliding wear and friction characteristics of SiC were studied against NCD coating. • Silicon oxide tribo-layer formation was observed in the NCD coating wear track. • Low hardness 1.2 GPa of tribo-layer was measured using nanoindentation technique. • Chemical states of silicon were analyzed using X-ray photoelectron spectroscopy.« less

Production of Solar-grade Silicon by Halidothermic Reduction of Silicon Tetrachloride

NASA Astrophysics Data System (ADS)

Yasuda, Kouji; Saegusa, Kunio; Okabe, Toru H.

2011-02-01

To develop a new production process for solar-grade Si, a fundamental study on halidothermic reduction based on the subhalide reduction of SiCl4 by Al subchloride reductant was carried out at 1273 K (1000 °C). Aluminum subchloride reductant was produced by reacting AlCl3 vapor with metallic Al. Silicon tetrachloride was reduced to Si in a gas-phase reaction by vapors of Al subchloride reductant. Silicon deposits produced in the halidothermic reduction were analyzed by X-ray diffraction (XRD), scanning electron microscopy (SEM), and X-ray fluorescence (XRF). The Al content in the Si deposits was no more than 0.5 at pct. The Si deposits have a fibrous or hexagonal columnar morphology with diameters ranging from 100 nm to several tens of microns. The reaction was discussed by comparison with the results of the conventional aluminothermic reduction of SiCl4. Moreover, the halidothermic reduction reactions were analyzed from thermodynamical viewpoints. This study demonstrates the feasibility of a halidothermic reduction for producing solar-grade Si with high productivity.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Sills, L.G.

In this study, hydrogenated amorphous silicon carbide thin films were deposited by reactive ion-beam sputtering under varying conditions to determine whether a film's optical properties can be controlled, focusing on refractive index. Using a Kaufman type ion source to sputter a pure silicon target, three distinct series of films were grown. The first series varied the mixture of methane and argon used in the ion-beam. holding all other parameters constant. For the second series the gas mix was fixed, and only the beam energy (beam voltage) was varied. The final series also varied beam energy, but was grown with amore » graphite shield next to the target to reduce metal contamination sputtered from chamber surfaces. Results show the index of refraction increased monotonically with beam energy up to a beam voltage of 1300 volts. Both the second and third series of films followed this trend, but analysis of differences in atomic composition between two series revealed opposite trends for how the silicon to carbon content ratio and refractive index were related. More precise control of the gas flow, and sputtering from only the intended (silicon)target would have reduced experimental errors.« less

Effects of parallel magnetic field on electrocodeposition behavior of Fe/nano-Si particles composite electroplating

NASA Astrophysics Data System (ADS)

Zhou, Pengwei; Zhong, Yunbo; Wang, Huai; Long, Qiong; Li, Fu; Sun, Zongqian; Dong, Licheng; Fan, Lijun

2013-10-01

The influence of an external parallel strong parallel magnetic field (respect to current) on the electrocodeposition of nano-silicon particles into an iron matrix has been studied in this paper. Test results show that magnetic field has a great influence on the distribution of silicon, as well as the surface morphology and the thickness of the composite coatings. When no magnetic field was applied, a high current density was needed to get high concentration of silicon particles, while that could be easily obtained at a low current density with a 2 T parallel magnetic field. However, Owing to the unevenness of the current density J-distribution on the surface of the electrode in 8 T, the thicker and rougher composite deposits appear in the edge region (L or R region), and the thinner and smoother ones appear in the middle region (M). Meanwhile, the distribution curve of silicon content looks like a “pan” along the center line of coatings. A possible mechanism combining to the numerical simulation results was suggested out to illustrate the obtained experiment results.

Effect of Si content on fatigue fracture behavior of hot-rolled high-silicon steels

NASA Astrophysics Data System (ADS)

Umezawa, Osamu; Kanda, Jyunichi; Yamazaki, Takao

2017-05-01

As the Si content was increased from 1.5 to 5 mass%, both the yield stress and ultimate tensile strength were increased, respectively. The work hardening rate was also increased as the increase of Si content. On the contrary, the elongation was decreased as the increase of Si content, and the fracture manner was shifted from ductile to brittle. The 107 cycles fatigue strength was higher as the increase of Si content. The small misorientation distribution as ladder-like was detected in the grains of 1.5 mass%Si steel. Around the grain boundary, the strain incompatibility was detected in the steels containing over 3 mass%Si. The lattice rotation was locally detected in the vicinity of grain boundaries.

Experimental evidence of trap level modulation in silicon nitride thin films by hydrogen annealing

NASA Astrophysics Data System (ADS)

Seki, Harumi; Kamimuta, Yuuichi; Mitani, Yuichiro

2018-06-01

The energy level of electron traps in silicon nitride (SiN x ) thin films was investigated by discharging current transient spectroscopy (DCTS). Results indicate that the trap level of the SiN x thin films becomes deeper with decreasing composition (N/Si) and shallower after hydrogen annealing. The dependence of the trap level on the SiN x composition and the modulation of the trap level by hydrogen annealing are possibly related to the change in the number of Si–H bonds in the SiN x thin films.

Preparation of silicon target material by adding Al-B master alloy in directional solidification

NASA Astrophysics Data System (ADS)

Li, Pengting; Wang, Kai; Ren, Shiqiang; Jiang, Dachuan; Tan, Yi

2017-03-01

The silicon target material was prepared by adding Al-6B master alloy in directional solidification. The microstructure was characterized and the resistivity was studied in this work. The results showed that the purity of the silicon target material was more than 99.999% (5N). The resistivity was ranges from 0.002 to 0.030 Ω·cm along the ingot height. It was revealed that the particles of AlB2 in Al-6B master alloy would react spontaneously and generate clusters of [B] and [Al] in molten silicon at 1723 K. After directional solidification, the content of B and Al were increasing gradually with the increase of solidified fraction. The measured values of B were in good agreement with the curve of the Scheil equation below 80% of the ingot height. The mean concentration of B was about 17.20 ppmw and the mean concentration of Al was about 8.07 ppmw after directional solidification. The measured values of Al were fitting well with the curve of values which the effective segregation coefficient was 0.00378. It was observed that B co-doped Al in directional solidification polysilicon could regulate resistivity mutually. This work provides the theoretical basis and technical support for industrial production of the silicon target material.

Inversion of chalcogen defect levels in silicon - An MNDO study. [modified neglect of diatomic overlap

NASA Technical Reports Server (NTRS)

Singh, R. K.; Sahu, S. N.; Singh, V. A.; Corbett, J. W.

1985-01-01

MNDO (modified neglect of diatomic overlap) calculations have been carried out for substitutional oxygen and sulfur impurities in silicon. The calculations of the gap levels reveal a reversal of trend with atomic ionization energies in agreement with self-consistent Green function results, and analysis of the MNDO charge distribution supports the view that the electronegativity difference between oxygen and sulfur gives rise to this shallower energy level.

``New'' energy states lead to phonon-less optoelectronic properties in nanostructured silicon

NASA Astrophysics Data System (ADS)

Singh, Vivek; Yu, Yixuan; Korgel, Brian; Nagpal, Prashant

2014-03-01

Silicon is arguably one of the most important technological material for electronic applications. However, indirect bandgap of silicon semiconductor has prevented optoelectronic applications due to phonon assistance required for photon light absorption/emission. Here we show, that previously unexplored surface states in nanostructured silicon can couple with quantum-confined energy levels, leading to phonon-less exciton-recombination and photoluminescence. We demonstrate size dependence (2.4 - 8.3 nm) of this coupling observed in small uniform silicon nanocrystallites, or quantum-dots, by direct measurements of their electronic density of states and low temperature measurements. To enhance the optical absorption of the these silicon quantum-dots, we utilize generation of resonant surface plasmon polariton waves, which leads to several fold increase in observed spectrally-resolved photocurrent near the quantum-confined bandedge states. Therefore, these enhanced light emission and absorption enhancement can have important implications for applications of nanostructured silicon for optoelectronic applications in photovoltaics and LEDs.

An Investigation of the Wear on Silicon Surface at High Humidity.

PubMed

Wang, Xiaodong; Guo, Jian; Xu, Lin; Cheng, Guanggui; Qian, Linmao

2018-06-16

Using an atomic force microscope (AFM), the wear of monocrystalline silicon (covered by a native oxide layer) at high humidity was investigated. The experimental results indicated that tribochemistry played an important role in the wear of the silicon at different relative humidity levels (RH = 60%, 90%). Since the tribochemical reactions were facilitated at 60% RH, the wear of silicon was serious and the friction force was around 1.58 μN under the given conditions. However, the tribochemical reactions were restrained when the wear pair was conducted at high humidity. As a result, the wear of silicon was very slight and the friction force decreased to 0.85 μN at 90% RH. The slight wear of silicon at high humidity was characterized by etching tests. It was demonstrated that the silicon sample surface was partly damaged and the native oxide layer on silicon sample surface had not been totally removed during the wear process. These results may help us optimize the tribological design of dynamic microelectromechanical systems working in humid conditions.

The paradox of characteristics of silicon detectors operated at temperature close to liquid helium

NASA Astrophysics Data System (ADS)

Eremin, V.; Shepelev, A.; Verbitskaya, E.; Zamantzas, C.; Galkin, A.

2018-05-01

The aim of this study is to give characterization of silicon p+/n/n+ detectors for the monitoring systems of the Large Hadron Collider machine at CERN with the focus on justifying the choice of silicon resistivity for the detector operation at the temperature of 1.9-10 K. The detectors from n-type silicon with the resistivity of 10, 4.5, and 0.5 kΩ cm were investigated at the temperature from 293 up to 7 K by the Transient Current Technique with a 660 nm pulse laser and alpha-particles. The shapes of the detector current pulse response allowed revealing a paradox in the properties of shallow donors of phosphorus, i.e., native dopants in the n-type Si. There was no carrier freeze-out on the phosphorus energy levels in the space charge region (SCR), and they remained positively charged irrespective of temperature, thus limiting the depleted region depth. As for the base region of a partially depleted detector, the levels became neutral at T < 28 K, which transformed silicon to an insulator. The reduction of the activation energy for carrier emission in the detector SCR estimated in the scope of the Poole-Frenkel effect failed to account for the impact of the electric field on the properties of phosphorus levels. The absence of carrier freeze-out in the SCR justifies the choice of high resistivity silicon as the only proper material for detector operation in a fully depleted mode at extremely low temperature.

Synthesis and characterization of LPCVD SiC films using novel precursors

NASA Astrophysics Data System (ADS)

Bhaskaran, Mahalingam

A unique low pressure chemical vapor deposition (LPCVD) process has been developed to synthesize amorphous and crystalline SiC films using environmentally benign chemicals. The interrelationships governing the process variables, compositions and select properties of the resulting films were established. Such films can be used to produce high quality mask membrane for x-ray lithography. These films can also be used in fabricating high power electrical devices, and hetrojunction devices in conjunction with silicon. Amorphous SiC films were synthesized using a single precursor, ditertiarybutylsilane, at temperatures below 850sp°C. Compositional analysis performed on these deposits revealed that, in the deposition temperature range of 625 to 750sp°C, the composition of the deposits changed progressively from slightly silicon rich (55% Si) to slightly carbon rich (51%C). Above 750sp°C, there was a rapid increase in the carbon content from the near stoichiometric value to about 75%-C at 850sp°C. The stoichiometric films exhibited high stress values of 700 ± 50 MPa. Attempts to reduce the stress values resulted in films with excess carbon content of about 60%-C. From the high frequency C-V characterization, the dielectric constant for these films was estimated to be 10.1 ± 0.5. Temperature bias stressing studies revealed a trapped charge density of 0.869× 10sp7 cIsp{-2} within the bulk. Crystalline silicon carbide films were grown on silicon substrates using dichlorosilane and acetylene as precursors, in the temperature range of 950sp°C to 1050sp°C. The carbon content in the film was found to be increasing with the deposition temperature, when the flow ratio of precursors was one. The carbon composition was also found to be sharply dependent on acetylene flow, for constant deposition temperature and pressure. Stoichiometric films were achieved for dichlorosilane to acetylene flow ratio of 4:1. X-ray diffraction studies confirmed the growth of beta-SiC with $$ orientation in all the cases. The voltage-current relationship for Si-film-metal structure showed a diode behavior with an ideality factor of 4.03 in the diffusion current dominating regime.

Resistance of Silicon Nitride Turbine Components to Erosion and Hot Corrosion/oxidation Attack

NASA Technical Reports Server (NTRS)

Strangmen, Thomas E.; Fox, Dennis S.

1994-01-01

Silicon nitride turbine components are under intensive development by AlliedSignal to enable a new generation of higher power density auxiliary power systems. In order to be viable in the intended applications, silicon nitride turbine airfoils must be designed for survival in aggressive oxidizing combustion gas environments. Erosive and corrosive damage to ceramic airfoils from ingested sand and sea salt must be avoided. Recent engine test experience demonstrated that NT154 silicon nitride turbine vanes have exceptional resistance to sand erosion, relative to superalloys used in production engines. Similarly, NT154 silicon nitride has excellent resistance to oxidation in the temperature range of interest - up to 1400 C. Hot corrosion attack of superalloy gas turbine components is well documented. While hot corrosion from ingested sea salt will attack silicon nitride substantially less than the superalloys being replaced in initial engine applications, this degradation has the potential to limit component lives in advanced engine applications. Hot corrosion adversely affects the strength of silicon nitride in the 850 to 1300 C range. Since unacceptable reductions in strength must be rapidly identified and avoided, AlliedSignal and the NASA Lewis Research Center have pioneered the development of an environmental life prediction model for silicon nitride turbine components. Strength retention in flexure specimens following 1 to 3300 hour exposures to high temperature oxidation and hot corrosion has been measured and used to calibrate the life prediction model. Predicted component life is dependent upon engine design (stress, temperature, pressure, fuel/air ratio, gas velocity, and inlet air filtration), mission usage (fuel sulfur content, location (salt in air), and times at duty cycle power points), and material parameters. Preliminary analyses indicate that the hot corrosion resistance of NT154 silicon nitride is adequate for AlliedSignal's initial engine applications. Protective coatings and/or inlet air filtration may be required to achieve required ceramic component lives in more aggressive environments.

Atom probe tomography characterizations of high nickel, low copper surveillance RPV welds irradiated to high fluences

NASA Astrophysics Data System (ADS)

Miller, M. K.; Powers, K. A.; Nanstad, R. K.; Efsing, P.

2013-06-01

The Ringhals Units 3 and 4 reactors in Sweden are pressurized water reactors (PWRs) designed and supplied by Westinghouse Electric Company, with commercial operation in 1981 and 1983, respectively. The reactor pressure vessels (RPVs) for both reactors were fabricated with ring forgings of SA 508 class 2 steel. Surveillance blocks for both units were fabricated using the same weld wire heat, welding procedures, and base metals used for the RPVs. The primary interest in these weld metals is because they have very high nickel contents, with 1.58 and 1.66 wt.% for Unit 3 and Unit 4, respectively. The nickel content in Unit 4 is the highest reported nickel content for any Westinghouse PWR. Although both welds contain less than 0.10 wt.% copper, the weld metals have exhibited high irradiation-induced Charpy 41-J transition temperature shifts in surveillance testing. The Charpy impact 41-J shifts and corresponding fluences are 192 °C at 5.0 × 1023 n/m2 (>1 MeV) for Unit 3 and 162 °C at 6.0 × 1023 n/m2 (>1 MeV) for Unit 4. These relatively low-copper, high-nickel, radiation-sensitive welds relate to the issue of so-called late-blooming nickel-manganese-silicon phases. Atom probe tomography measurements have revealed ˜2 nm-diameter irradiation-induced precipitates containing manganese, nickel, and silicon, with phosphorus evident in some of the precipitates. However, only a relatively few number of copper atoms are contained within the precipitates. The larger increase in the transition temperature shift in the higher copper weld metal from the Ringhals R3 Unit is associated with copper-enriched regions within the manganese-nickel-silicon-enriched precipitates rather than changes in their size or number density.

Nonlinear silicon photonics

NASA Astrophysics Data System (ADS)

Tsia, Kevin K.; Jalali, Bahram

2010-05-01

An intriguing optical property of silicon is that it exhibits a large third-order optical nonlinearity, with orders-ofmagnitude larger than that of silica glass in the telecommunication band. This allows efficient nonlinear optical interaction at relatively low power levels in a small footprint. Indeed, we have witnessed a stunning progress in harnessing the Raman and Kerr effects in silicon as the mechanisms for enabling chip-scale optical amplification, lasing, and wavelength conversion - functions that until recently were perceived to be beyond the reach of silicon. With all the continuous efforts developing novel techniques, nonlinear silicon photonics is expected to be able to reach even beyond the prior achievements. Instead of providing a comprehensive overview of this field, this manuscript highlights a number of new branches of nonlinear silicon photonics, which have not been fully recognized in the past. In particular, they are two-photon photovoltaic effect, mid-wave infrared (MWIR) silicon photonics, broadband Raman effects, inverse Raman scattering, and periodically-poled silicon (PePSi). These novel effects and techniques could create a new paradigm for silicon photonics and extend its utility beyond the traditionally anticipated applications.

Bond Testing for Effects of Silicone Contamination

NASA Technical Reports Server (NTRS)

Plaia, James; Evans, Kurt

2005-01-01

In 2003 ATK Thiokol discovered that the smocks and coveralls worn by its operations personnel for safety and contamination control were themselves contaminated with a silicone defoamer and a silicone oil. As a growing list of items have been identified as having this form of contamination, it was desirable to devise a test method to determine if the contamination level detected could cause subsequent processing concerns. The smocks and coveralls could potentially contact bonding surfaces during processing so the test method focused on dry transfer of the silicone from the clothing to the bonding surface.

Digital pulse-shape analysis with a TRACE early silicon prototype

NASA Astrophysics Data System (ADS)

Mengoni, D.; Dueñas, J. A.; Assié, M.; Boiano, C.; John, P. R.; Aliaga, R. J.; Beaumel, D.; Capra, S.; Gadea, A.; Gonzáles, V.; Gottardo, A.; Grassi, L.; Herrero-Bosch, V.; Houdy, T.; Martel, I.; Parkar, V. V.; Perez-Vidal, R.; Pullia, A.; Sanchis, E.; Triossi, A.; Valiente Dobón, J. J.

2014-11-01

A highly segmented silicon-pad detector prototype has been tested to explore the performance of the digital pulse shape analysis in the discrimination of the particles reaching the silicon detector. For the first time a 200 μm thin silicon detector, grown using an ordinary floating zone technique, has been shown to exhibit a level discrimination thanks to the fine segmentation. Light-charged particles down to few MeV have been separated, including their punch-through. A coaxial HPGe detector in time coincidence has further confirmed the quality of the particle discrimination.

Investigation on the structural characterization of pulsed p-type porous silicon

NASA Astrophysics Data System (ADS)

Wahab, N. H. Abd; Rahim, A. F. Abd; Mahmood, A.; Yusof, Y.

2017-08-01

P-type Porous silicon (PS) was sucessfully formed by using an electrochemical pulse etching (PC) and conventional direct current (DC) etching techniques. The PS was etched in the Hydrofluoric (HF) based solution at a current density of J = 10 mA/cm2 for 30 minutes from a crystalline silicon wafer with (100) orientation. For the PC process, the current was supplied through a pulse generator with 14 ms cycle time (T) with 10 ms on time (Ton) and pause time (Toff) of 4 ms respectively. FESEM, EDX, AFM, and XRD have been used to characterize the morphological properties of the PS. FESEM images showed that pulse PS (PPC) sample produces more uniform circular structures with estimated average pore sizes of 42.14 nm compared to DC porous (PDC) sample with estimated average size of 16.37nm respectively. The EDX spectrum for both samples showed higher Si content with minimal presence of oxide.

Diatomite releases silica during spirit filtration.

PubMed

Gómez, J; Gil, M L A; de la Rosa-Fox, N; Alguacil, M

2014-09-15

The purpose of this study was to ascertain whether diatomite is an inert filter aid during spirit filtration. Surely, any compound with a negative effect on the spirit composition or the consumer's health could be dissolved. In this study different diatomites were treated with 36% vol. ethanol/water mixtures and the amounts and structures of the extracted compounds were determined. Furthermore, Brandy de Jerez was diatomite- and membrane-filtered at different temperatures and the silicon content was analysed. It was found that up to 0.36% by weight of diatomite dissolved in the aqueous ethanol and amorphous silica, in the form of hollow spherical microparticles, was the most abundant component. Silicon concentrations in Brandy de Jerez increased by up to 163.0% after contact with diatomite and these changes were more marked for calcined diatomite. In contrast, reductions of more than 30% in silicon concentrations were achieved after membrane filtration at low temperatures. Copyright © 2014 Elsevier Ltd. All rights reserved.

Spherical silicon photonic microcavities: From amorphous to polycrystalline

NASA Astrophysics Data System (ADS)

Fenollosa, R.; Garín, M.; Meseguer, F.

2016-06-01

Shaping silicon as a spherical object is not an obvious task, especially when the object size is in the micrometer range. This has the important consequence of transforming bare silicon material in a microcavity, so it is able to confine light efficiently. Here, we have explored the inside volume of such microcavities, both in their amorphous and in their polycrystalline versions. The synthesis method, which is based on chemical vapor deposition, causes amorphous microspheres to have a high content of hydrogen that produces an onionlike distributed porous core when the microspheres are crystallized by a fast annealing regime. This substantially influences the resonant modes. However, a slow crystallization regime does not yield pores, and produces higher-quality-factor resonances that could be fitted to the Mie theory. This allows the establishment of a procedure for obtaining size calibration standards with relative errors of the order of 0.1%.

Preparation of wafer-level glass cavities by a low-cost chemical foaming process (CFP).

PubMed

Shang, Jintang; Chen, Boyin; Lin, Wei; Wong, Ching-Ping; Zhang, Di; Xu, Chao; Liu, Junwen; Huang, Qing-An

2011-04-21

A novel foaming process-chemical foaming process (CFP)-using foaming agents to fabricate wafer-level micro glass cavities including channels and bubbles was investigated. The process consists of the following steps sequentially: (1) shallow cavities were fabricated by a wet etching on a silicon wafer; (2) powders of a proper foaming agent were placed in a silicon cavity, named 'mother cavity', on the etched silicon surface; (3) the silicon cavities were sealed with a glass wafer by anodic bonding; (4) the bonded wafers were heated to above the softening point of the glass, and baked for several minutes, when the gas released by the decomposition of the foaming agent in the 'mother cavity' went into the other sealed interconnected silicon cavities to foam the softened glass into cylindrical channels named 'daughter channels', or spherical bubbles named 'son bubbles'. Results showed that wafer-level micro glass cavities with smooth wall surfaces were achieved successfully without contamination by the CFP. A model for the CFP was proposed to predict the final shape of the glass cavity. Experimental results corresponded with model predictions. The CFP provides a low-cost avenue to preparation of micro glass cavities of high quality for applications such as micro-reactors, micro total analysis systems (μTAS), analytical and bio-analytical applications, and MEMS packaging.

Low temperature coefficient of resistance and high gage factor in beryllium-doped silicon

NASA Technical Reports Server (NTRS)

Robertson, J. B.; Littlejohn, M. A.

1974-01-01

The gage factor and resistivity of p-type silicon doped with beryllium was studied as a function of temperature, crystal orientation, and beryllium doping concentration. It was shown that the temperature coefficient of resistance can be varied and reduced to zero near room temperature by varying the beryllium doping level. Similarly, the magnitude of the piezoresistance gage factor for beryllium-doped silicon is slightly larger than for silicon doped with a shallow acceptor impurity such as boron, whereas the temperature coefficient of piezoresistance is about the same for material containing these two dopants. These results are discussed in terms of a model for the piezoresistance of compensated p-type silicon.

Demonstration of low power penalty of silicon Mach-Zehnder modulator in long-haul transmission.

PubMed

Yi, Huaxiang; Long, Qifeng; Tan, Wei; Li, Li; Wang, Xingjun; Zhou, Zhiping

2012-12-03

We demonstrate error-free 80km transmission by a silicon carrier-depletion Mach-Zehnder modulator at 10Gbps and the power penalty is as low as 1.15dB. The devices were evaluated through the bit-error-rate characterizations under the system-level analysis. The silicon Mach-Zehnder modulator was also analyzed comparatively with a lithium niobate Mach-Zehnder modulator in back-to-back transmission and long-haul transmission, respectively, and verified the negative chirp parameter of the silicon modulator through the experiment. The result of low power penalty indicates a practical application for the silicon modulator in the middle- or long-distance transmission systems.

Scalable synthesis of nano-silicon from beach sand for long cycle life Li-ion batteries.

PubMed

Favors, Zachary; Wang, Wei; Bay, Hamed Hosseini; Mutlu, Zafer; Ahmed, Kazi; Liu, Chueh; Ozkan, Mihrimah; Ozkan, Cengiz S

2014-07-08

Herein, porous nano-silicon has been synthesized via a highly scalable heat scavenger-assisted magnesiothermic reduction of beach sand. This environmentally benign, highly abundant, and low cost SiO₂ source allows for production of nano-silicon at the industry level with excellent electrochemical performance as an anode material for Li-ion batteries. The addition of NaCl, as an effective heat scavenger for the highly exothermic magnesium reduction process, promotes the formation of an interconnected 3D network of nano-silicon with a thickness of 8-10 nm. Carbon coated nano-silicon electrodes achieve remarkable electrochemical performance with a capacity of 1024 mAhg(-1) at 2 Ag(-1) after 1000 cycles.

40 CFR 1065.1010 - Reference materials.

Code of Federal Regulations, 2010 CFR

2010-07-01

... § 1065.1010—Institute of Petroleum Materials Document No. and name Part 1065 reference IP-470... atomic absorption spectrometry 1065.705 IP-500, Determination of the phosphorus content of residual fuels by ultra-violet spectrometry 1065.705 IP-501, Determination of aluminum, silicon, vanadium, nickel...

40 CFR 98.286 - Data reporting requirements.

Code of Federal Regulations, 2014 CFR

2014-07-01

... that missing data procedures were followed to measure the carbon contents of petroleum coke (number of... 40 Protection of Environment 21 2014-07-01 2014-07-01 false Data reporting requirements. 98.286... (CONTINUED) MANDATORY GREENHOUSE GAS REPORTING Silicon Carbide Production § 98.286 Data reporting...

The friction and wear of metals and binary alloys in contact with an abrasive grit of single-crystal silicon carbide

NASA Technical Reports Server (NTRS)

Miyoshi, K.; Buckley, D. H.

1979-01-01

Sliding friction experiments were conducted with various metals and iron-base binary alloys (alloying elements Ti, Cr, Mn, Ni, Rh and W) in contact with single crystal silicon carbide riders. Results indicate that the friction force in the plowing of metal and the groove height (corresponding to the wear volume of the groove) decrease linearly as the shear strength of the bulk metal increases. The coefficient of friction and groove height generally decrease, and the contact pressure increases with an increase in solute content of binary alloys. There appears to be very good correlation of the solute to iron atomic ratio with the decreasing rate of change of coefficient of friction, the decreasing rate of change of groove height and the increasing rate of change of contact pressure with increasing solute content. These rates of change increase as the solute to iron atomic radius ratio increases or decreases from unity.

Modeling of Different Fiber Type and Content SiC/SiC Minicomposites Creep Behavior

NASA Technical Reports Server (NTRS)

Almansour, Amjad S.; Morscher, Gregory N.

2017-01-01

Silicon Carbide based Ceramic Matrix Composites (CMCs) are attractive materials for use in high-temperature applications in the aerospace and nuclear industries. However, creep damage mechanism in CMCs is the most dominant mechanism at elevated temperatures. Consequently, the tensile creep behavior of Hi-Nicalon, Hi-Nicalon Type S SiC fibers and Chemical vapor infiltrated Silicon Carbide matrix (CVI-SiC) were characterized and creep parameters were extracted from creep experiments. Some fiber creep tests were performed in inert environment at 1200 C on individual fibers. Creep behavior of different fiber content pristine and precracked Hi-Nicalon and Hi-Nicalon Type S reinforced minicomposites with BN interphases and CVI-SiC matrix were then modelled using the creep data found in this study and the literature and compared with creep experiments results for the pristine and precracked Hi-Nicalon and Hi-Nicalon Type S minicomposites. Finally, the effects of load-sharing and matrix cracking on CMC creep behavior will be discussed.

New electron trap in p-type Czochralski silicon

NASA Technical Reports Server (NTRS)

Mao, B.-Y.; Lagowski, J.; Gatos, H. C.

1984-01-01

A new electron trap (acceptor level) was discovered in p-type Czochralski (CZ) silicon by current transient spectroscopy. The behavior of this trap was found to be similar to that of the oxygen thermal donors; thus, 450 C annealing increases the trap concentration while high-temperature annealing (1100-1200 C) leads to the virtual elimination of the trap. The new trap is not observed in either float-zone or n-type CZ silicon. Its energy level depends on the group III doping element in the sample. These findings suggest that the trap is related to oxygen, and probably to the acceptor impurity as well.

Reduction of carbon contamination during the melting process of Czochralski silicon crystal growth

NASA Astrophysics Data System (ADS)

Liu, Xin; Gao, Bing; Nakano, Satoshi; Kakimoto, Koichi

2017-09-01

Generation, incorporation, and accumulation of carbon (C) were investigated by transient global simulations of heat and mass transport during the melting process of Czochralski silicon (CZ-Si) crystal growth. Contact reaction between the quartz crucible and graphite susceptor was introduced as an extra origin of C contamination. The contribution of the contact reaction on C accumulation is affected by the back diffusion of C monoxide (CO) from the gap between the gas-guide and the crucible. The effect of the gas-guide coating on C reduction was elucidated by taking the reaction between the silicon carbide (SiC) coating and gaseous Si monoxide (SiO) into account. Application of the SiC coating on the gas-guide could effectively reduce the C contamination because of its higher thermochemical stability relative to that of graphite. Gas flow control on the back diffusion of the generated CO was examined by the parametric study of argon gas flow rate. Generation and back diffusion of CO were both effectively suppressed by the increase in the gas flow rate because of the high Péclet number of species transport. Strategies for C content reduction were discussed by analyzing the mechanisms of C accumulation process. According to the elucidated mechanisms of C accumulation, the final C content depends on the growth duration and contamination flux at the gas/melt interface.

Packing Polymorphism of Dapivirine and Its Impact on the Performance of a Dapivirine-Releasing Silicone Elastomer Vaginal Ring.

PubMed

McCoy, Clare F; Murphy, Diarmaid J; Boyd, Peter; Derrick, Tiffany; Spence, Patrick; Devlin, Brid; Malcolm, R Karl

2017-08-01

A silicone elastomer vaginal ring providing sustained release over 28 days of the anti-retroviral microbicide dapivirine has recently completed phase III clinical testing and showed moderate protection against HIV acquisition. In support of the product licensure program, we report the impact of dapivirine packing polymorphism on the thermal and solubility characteristics of dapivirine and on the in vitro performance of the 25 mg dapivirine ring product. This is the first time that polymorphism has been reported for a drug-releasing vaginal ring product. Thermal, particle size, powder X-ray diffraction, and thermodynamic solubility analyses of dapivirine polymorphic forms I and IV, both of which are persistent at room temperature and with form I being the thermodynamically stable form, were conducted for both micronized and non-micronized materials. No significant differences in solubility between DPV forms I and IV were observed in media commonly used for in vitro release testing. Matrix-type silicone elastomer vaginal rings were manufactured and the impact of dapivirine polymorphism on key in vitro parameters (compression and tensile behavior; content assay; in vitro release; residual content assay) was investigated. The data demonstrate that dapivirine packing polymorphism has no significant impact on in vitro performance of the 25 mg dapivirine vaginal ring. Copyright © 2017 American Pharmacists Association®. Published by Elsevier Inc. All rights reserved.

Superior in vitro biological response and mechanical properties of an implantable nanostructured biomaterial: Nanohydroxyapatite-silicone rubber composite.

PubMed

Thein-Han, W W; Shah, J; Misra, R D K

2009-09-01

A potential approach to achieving the objective of favorably modulating the biological response of implantable biopolymers combined with good mechanical properties is to consider compounding the biopolymer with a bioactive nanocrystalline ceramic biomimetic material with high surface area. The processing of silicone rubber (SR)-nanohydroxyapatite (nHA) composite involved uniform dispersion of nHA via shear mixing and ultrasonication, followed by compounding at sub-ambient temperature, and high-pressure solidification when the final curing reaction occurs. The high-pressure solidification approach enabled the elastomer to retain the high elongation of SR even in the presence of the reinforcement material, nHA. The biological response of the nanostructured composite in terms of initial cell attachment, cell viability and proliferation was consistently greater on SR-5wt.% nHA composite surface compared to pure SR. Furthermore, in the nanocomposite, cell spreading, morphology and density were distinctly different from that of pure SR. Pre-osteoblasts grown on SR-nHA were well spread, flat, large in size with a rough cell surface, and appeared as a group. In contrast, these features were less pronounced in SR (e.g. smooth cell surface, not well spread). Interestingly, an immunofluorescence study illustrated distinct fibronectin expression level, and stronger vinculin focal adhesion contacts associated with abundant actin stress fibers in pre-osteoblasts grown on the nanocomposite compared to SR, implying enhanced cell-substrate interaction. This finding was consistent with the total protein content and SDS-PAGE analysis. The study leads us to believe that further increase in nHA content in the SR matrix beyond 5wt.% will encourage even greater cellular response. The integration of cellular and molecular biology with materials science and engineering described herein provides a direction for the development of a new generation of nanostructured materials.

Investigation of the surface morphology of biocompatible chitosan-based hydrogels and xerogels

NASA Astrophysics Data System (ADS)

Zhuravleva, Yulia Yu.; Malinkina, Olga N.; Shipovskaya, Anna B.

2018-04-01

Our biocompatible hydrogel systems obtained by the sol-gel technqiue and based on chitosan and silicon polyolates are promising for medical and biological applications. The surface microrelief of these sol-gel materials (hydrogels and xerogels) based on chitosan and silicon tetraglycerolate was explored by AFM and SEM. A significant influence of the component ratio in the mixed system on the morphology and surface profile of the hydrogels and xerogels prepared therefrom was established. An increased content of the structure-forming component (chitosan) in the system was shown to increase the roughness scale of the hydrogel surface and to promote the porosity of the xerogel structure.

Strength and fatigue of NT551 silicon nitride and NT551 diesel exhaust valves

DOE Office of Scientific and Technical Information (OSTI.GOV)

Andrews, M.J.; Werezczak, A.A.; Kirkland, T.P.

2000-02-01

The content of this report is excerpted from Mark Andrew's Ph.D. Thesis (Andrews, 1999), which was funded by a DOE/OTT High Temperature Materials Laboratory Graduate Fellowship. It involves the characterization of NT551 and valves fabricated with it. The motivations behind using silicon nitride (Si{sub 3}N{sub 4}) as an exhaust valve for a diesel engine are presented in this section. There are several economic factors that have encouraged the design and implementation of ceramic components for internal combustion (IC) engines. The reasons for selecting the diesel engine valve for this are also presented.

Direct determination of solid-electrolyte interphase thickness and composition as a function of state of charge on a silicon anode

DOE PAGES

Veith, Gabriel M.; Doucet, Mathieu; Baldwin, J. K.; ...

2015-08-17

Using neutron reflectometry we have determined the thickness and chemistry of the solid-electrolyte interphase (SEI) layer grown on a silicon anode as a function of state of charge and during cycling. We show the chemistry of this SEI layer becomes more LiF like with increasing lithiation and more Li-C-O-F like with delithiation. More importantly the SEI layer thickness appears to increase (about 250 ) as the electrode becomes less lithiated and thins to 180 with increasing Li content (Li 3.7Si). We attribute this breathing to the continual consumption of electrolyte with cycling.

Microstructure and orientation effects on properties of discontinuous silicon carbide/aluminum composites

NASA Technical Reports Server (NTRS)

Mcdanels, D. L.; Hoffman, C. A.

1984-01-01

Composite panels containing up to 40 vol % discontinuous silicon carbide SiC whisker, nodule, or particulate reinforcement in several aluminum matrices are commercially fabricated and the mechanical properties and microstructual characteristics are evaluated. The yield and tensile strengths and the ductility are controlled primarily by the matrix alloy, the temper condition, and the reinforcement content. Particulate and nodule reinforcements are as effective as whisker reinforcement. Increased ductility is attributed to purer, more uniform starting materials and to more mechanical working during fabrication. Comparing mechanical properties with those of other aluminum alloys shows that these low cost, lightweight composites demonstrate very good potential for application to aerospace structures.

Pellet Feed for Dendritic-Web Growth

NASA Technical Reports Server (NTRS)

Duncan, C. S.; Skutch, M. E.; Mchugh, J. P.

1983-01-01

Melt replenishment system sustains continuous growth of silicon dentritic web for several days. Substantially increases size of batch, limited mainly by level of impurities and life of crucible. Silicon pellets automatically added to crucible sustain crystal growth for days.

A wearable multiplexed silicon nonvolatile memory array using nanocrystal charge confinement

PubMed Central

Kim, Jaemin; Son, Donghee; Lee, Mincheol; Song, Changyeong; Song, Jun-Kyul; Koo, Ja Hoon; Lee, Dong Jun; Shim, Hyung Joon; Kim, Ji Hoon; Lee, Minbaek; Hyeon, Taeghwan; Kim, Dae-Hyeong

2016-01-01

Strategies for efficient charge confinement in nanocrystal floating gates to realize high-performance memory devices have been investigated intensively. However, few studies have reported nanoscale experimental validations of charge confinement in closely packed uniform nanocrystals and related device performance characterization. Furthermore, the system-level integration of the resulting devices with wearable silicon electronics has not yet been realized. We introduce a wearable, fully multiplexed silicon nonvolatile memory array with nanocrystal floating gates. The nanocrystal monolayer is assembled over a large area using the Langmuir-Blodgett method. Efficient particle-level charge confinement is verified with the modified atomic force microscopy technique. Uniform nanocrystal charge traps evidently improve the memory window margin and retention performance. Furthermore, the multiplexing of memory devices in conjunction with the amplification of sensor signals based on ultrathin silicon nanomembrane circuits in stretchable layouts enables wearable healthcare applications such as long-term data storage of monitored heart rates. PMID:26763827

Three levels of neuroelectronic interfacing: silicon chips with ion channels, nerve cells, and brain tissue.

PubMed

Fromherz, Peter

2006-12-01

We consider the direct electrical interfacing of semiconductor chips with individual nerve cells and brain tissue. At first, the structure of the cell-chip contact is studied. Then we characterize the electrical coupling of ion channels--the electrical elements of nerve cells--with transistors and capacitors in silicon chips. On that basis it is possible to implement signal transmission between microelectronics and the microionics of nerve cells in both directions. Simple hybrid neuroelectronic systems are assembled with neuron pairs and with small neuronal networks. Finally, the interfacing with capacitors and transistors is extended to brain tissue cultured on silicon chips. The application of highly integrated silicon chips allows an imaging of neuronal activity with high spatiotemporal resolution. The goal of the work is an integration of neuronal network dynamics with digital electronics on a microscopic level with respect to experiments in brain research, medical prosthetics, and information technology.

A wearable multiplexed silicon nonvolatile memory array using nanocrystal charge confinement.

PubMed

Kim, Jaemin; Son, Donghee; Lee, Mincheol; Song, Changyeong; Song, Jun-Kyul; Koo, Ja Hoon; Lee, Dong Jun; Shim, Hyung Joon; Kim, Ji Hoon; Lee, Minbaek; Hyeon, Taeghwan; Kim, Dae-Hyeong

2016-01-01

Strategies for efficient charge confinement in nanocrystal floating gates to realize high-performance memory devices have been investigated intensively. However, few studies have reported nanoscale experimental validations of charge confinement in closely packed uniform nanocrystals and related device performance characterization. Furthermore, the system-level integration of the resulting devices with wearable silicon electronics has not yet been realized. We introduce a wearable, fully multiplexed silicon nonvolatile memory array with nanocrystal floating gates. The nanocrystal monolayer is assembled over a large area using the Langmuir-Blodgett method. Efficient particle-level charge confinement is verified with the modified atomic force microscopy technique. Uniform nanocrystal charge traps evidently improve the memory window margin and retention performance. Furthermore, the multiplexing of memory devices in conjunction with the amplification of sensor signals based on ultrathin silicon nanomembrane circuits in stretchable layouts enables wearable healthcare applications such as long-term data storage of monitored heart rates.

Advanced Non-Destructive Assessment Technology to Determine the Aging of Silicon Containing Materials for Generation IV Nuclear Reactors

NASA Astrophysics Data System (ADS)

Koenig, T. W.; Olson, D. L.; Mishra, B.; King, J. C.; Fletcher, J.; Gerstenberger, L.; Lawrence, S.; Martin, A.; Mejia, C.; Meyer, M. K.; Kennedy, R.; Hu, L.; Kohse, G.; Terry, J.

2011-06-01

To create an in-situ, real-time method of monitoring neutron damage within a nuclear reactor core, irradiated silicon carbide samples are examined to correlate measurable variations in the material properties with neutron fluence levels experienced by the silicon carbide (SiC) during the irradiation process. The reaction by which phosphorus doping via thermal neutrons occurs in the silicon carbide samples is known to increase electron carrier density. A number of techniques are used to probe the properties of the SiC, including ultrasonic and Hall coefficient measurements, as well as high frequency impedance analysis. Gamma spectroscopy is also used to examine residual radioactivity resulting from irradiation activation of elements in the samples. Hall coefficient measurements produce the expected trend of increasing carrier concentration with higher fluence levels, while high frequency impedance analysis shows an increase in sample impedance with increasing fluence.

Improved High/Low Junction Silicon Solar Cell

NASA Technical Reports Server (NTRS)

Neugroschel, A.; Pao, S. C.; Lindholm, F. A.; Fossum, J. G.

1986-01-01

Method developed to raise value of open-circuit voltage in silicon solar cells by incorporating high/low junction in cell emitter. Power-conversion efficiency of low-resistivity silicon solar cell considerably less than maximum theoretical value mainly because open-circuit voltage is smaller than simple p/n junction theory predicts. With this method, air-mass-zero opencircuit voltage increased from 600 mV level to approximately 650 mV.

A deep-level transient spectroscopy study of gamma-ray irradiation on the passivation properties of silicon nitride layer on silicon

NASA Astrophysics Data System (ADS)

Dong, Peng; Yu, Xuegong; Ma, Yao; Xie, Meng; Li, Yun; Huang, Chunlai; Li, Mo; Dai, Gang; Zhang, Jian

2017-08-01

Plasma-enhanced chemical vapor deposited silicon nitride (SiNx) films are extensively used as passivation material in the solar cell industry. Such SiNx passivation layers are the most sensitive part to gamma-ray irradiation in solar cells. In this work, deep-level transient spectroscopy has been applied to analyse the influence of gamma-ray irradiation on the passivation properties of SiNx layer on silicon. It is shown that the effective carrier lifetime decreases with the irradiation dose. At the same time, the interface state density is significantly increased after irradiation, and its energy distribution is broadened and shifts deeper with respect to the conduction band edge, which makes the interface states becoming more efficient recombination centers for carriers. Besides, C-V characteristics show a progressive negative shift with increasing dose, indicating the generation of effective positive charges in SiNx films. Such positive charges are beneficial for shielding holes from the n-type silicon substrates, i. e. the field-effect passivation. However, based on the reduced carrier lifetime after irradiation, it can be inferred that the irradiation induced interface defects play a dominant role over the trapped positive charges, and therefore lead to the degradation of passivation properties of SiNx on silicon.

Zircon Carburation Studies as Intermediate Stage in the Zirconium Fabrication; ESTUDIOS ENCAMINADOS A LA CARBURACTION DEL CIRON COMO ETAPA INTERMEDIA EN LA OBTENCION DE CIRCONIO

DOE Office of Scientific and Technical Information (OSTI.GOV)

Huertas, V.A.; Gonzalez, L.S.; Lopez, M.

1963-01-01

Zirconium carbide and carbonitride mixtures were obtained by Kroll's method. Reaction products were identified by micrography and x-ray diffraction analysis. The optimum graphite content in the initial charge for the carburization reaction was studied. Zirconium, silicon, and carbon content in the final product was controlled as a function of current in the furnace and reaction time. Further chlorination of the final product was performed successfully. (auth)

In-Line Measurement of Water Contents in Ethanol Using a Zeolite-Coated Quartz Crystal Microbalance

PubMed Central

Kim, Byoung Chul; Yamamoto, Takuji; Kim, Young Han

2015-01-01

A quartz crystal microbalance (QCM) was utilized to measure the water content in ethanol. For the improvement of measurement sensitivity, the QCM was modified by applying zeolite particles on the surface with poly(methyl methacrylate) (PMMA) binder. The measurement performance was examined with ethanol of 1% to 5% water content in circulation. The experimental results showed that the frequency drop of the QCM was related with the water content though there was some deviation. The sensitivity of the zeolite-coated QCM was sufficient to be implemented in water content determination, and a higher ratio of silicon to aluminum in the molecular structure of the zeolite gave better performance. The coated surface was inspected by microscopy to show the distribution of zeolite particles and PMMA spread. PMID:26516859

MEMS for Practical Applications

NASA Astrophysics Data System (ADS)

Esashi, Masayoshi

Silicon MEMS as electrostatically levitated rotational gyroscopes and 2D optical scanners, and wafer level packaged devices as integrated capacitive pressure sensors and MEMS switches are described. MEMS which use non-silicon materials as LTCC with electrical feedthrough, SiC and LiNbO3 for probe cards for wafer-level burn-in test, molds for glass press molding and SAW wireless passive sensors respectively are also described.

Lunar production of solar cells

NASA Technical Reports Server (NTRS)

Landis, Geoffrey A.; Perino, Maria Antonietta

1989-01-01

The feasibility of manufacturing of solar cells on the moon for spacecraft applications is examined. Because of the much lower escape velocity, there is a great advantage in lunar manufacture of solar cells compared to Earth manufacture. Silicon is abundant on the moon, and new refining methods allow it to be reduced and purified without extensive reliance on materials unavailable on the moon. Silicon and amorphous silicon solar cells could be manufactured on the moon for use in space. Concepts for the production of a baseline amorphous silicon cell are discussed, and specific power levels are calculated for cells designed for both lunar and Earth manufacture.

Heavy doping effects in high efficiency silicon solar cells

NASA Technical Reports Server (NTRS)

Lindholm, F. A.; Neugroschel, A.

1985-01-01

The use of a (silicon)/(heavily doped polysilicon)/(metal) structure to replace the conventional high-low junction (or back-surface-field, BSF) structure of silicon solar cells was examined. The results of an experimental study designed to explore both qualitatively and quantitatively the mechanism of the improved current gain in bipolar transistors with polysilicon emitter contact are presented. A reciprocity theorem is presented that relates the short circuit current of a device, induced by a carrier generation source, to the minority carrier Fermi level in the dark. A method for accurate measurement of minority-carrier diffusion coefficients in silicon is described.

Measurement of steady-state minority-carrier transport parameters in heavily doped n-type silicon

NASA Technical Reports Server (NTRS)

Del Alamo, Jesus A.; Swanson, Richard M.

1987-01-01

The relevant hole transport and recombination parameters in heavily doped n-type silicon under steady state are the hole diffusion length and the product of the hole diffusion coefficient times the hole equilibrium concentration. These parameters have measured in phosphorus-doped silicon grown by epitaxy throughout nearly two orders of magnitude of doping level. Both parameters are found to be strong functions of donor concentration. The equilibrium hole concentration can be deduced from the measurement. A rigid shrinkage of the forbidden gap appears as the dominant heavy doping mechanism in phosphorus-doped silicon.

Flat-plate solar array project. Volume 2: Silicon material

NASA Technical Reports Server (NTRS)

Lutwack, R.

1986-01-01

The goal of the Silicon Material Task, a part of the Flat Plate Solar Array (FSA) Project, was to develop and demonstate the technology for the low cost production of silicon of suitable purity to be used as the basic material for the manufacture of terrestrial photovoltaic solar cells. Summarized are 11 different processes for the production of silicon that were investigated and developed to varying extent by industrial, university, and Government researchers. The silane production section of the Union Carbide Corp. (UCC) silane process was developed completely in this program. Coupled with Siemens-type chemical vapor deposition reactors, the process was carried through the pilot stage. The overall UCC process involves the conversion of metallurgical-grade silicon to silane followed by decomposition of the silane to purified silicon. The other process developments are described to varying extents. Studies are reported on the effects of impurities in silicon on both silicon-material properties and on solar cell performance. These studies on the effects of impurities yielded extensive information and models for relating specific elemental concentrations to levels of deleterious effects.

Flat-plate solar array project. Volume 2: Silicon material

NASA Astrophysics Data System (ADS)

Lutwack, R.

1986-10-01

The goal of the Silicon Material Task, a part of the Flat Plate Solar Array (FSA) Project, was to develop and demonstate the technology for the low cost production of silicon of suitable purity to be used as the basic material for the manufacture of terrestrial photovoltaic solar cells. Summarized are 11 different processes for the production of silicon that were investigated and developed to varying extent by industrial, university, and Government researchers. The silane production section of the Union Carbide Corp. (UCC) silane process was developed completely in this program. Coupled with Siemens-type chemical vapor deposition reactors, the process was carried through the pilot stage. The overall UCC process involves the conversion of metallurgical-grade silicon to silane followed by decomposition of the silane to purified silicon. The other process developments are described to varying extents. Studies are reported on the effects of impurities in silicon on both silicon-material properties and on solar cell performance. These studies on the effects of impurities yielded extensive information and models for relating specific elemental concentrations to levels of deleterious effects.

Extinguishing visible photoluminescence of porous silicon stimulated by antigen-antibody immunocomplex formation

NASA Astrophysics Data System (ADS)

Starodub, Nickolaj F.; Fedorenko, Leonid L.; Starodub, Valentyna M.; Dikiy, S. P.; Svechnikov, Sergey V.

1997-02-01

The photoluminescence of the porous silicon obtained by special procedure with the usage of the chemical and laser beam treatment of silicon crystal was investigated in water, buffer and solution containing sodium chloride. It was demonstrated that the intensity of the photoluminescence did not practically change at the above mentioned conditions as well as after antigen or antibody immobilization on the porous silicon surface. But this parameter of the photoluminescence dramatically decreased in case of specific immune complex formation on the silicon surface. The level of the photoluminescence extinguishing depended on duration and intensity of immune reaction. It is proposed to use discovered effect for creation of the immunosensors based on the direct registration of immunocomplex formation.

Athermal Silicon-on-insulator ring resonators by overlaying a polymer cladding on narrowed waveguides.

PubMed

Teng, Jie; Dumon, Pieter; Bogaerts, Wim; Zhang, Hongbo; Jian, Xigao; Han, Xiuyou; Zhao, Mingshan; Morthier, Geert; Baets, Roel

2009-08-17

Athermal silicon ring resonators are experimentally demonstrated by overlaying a polymer cladding on narrowed silicon wires. The ideal width to achieve athermal condition for the TE mode of 220 nm-height SOI waveguides is found to be around 350 nm. After overlaying a polymer layer, the wavelength temperature dependence of the silicon ring resonator is reduced to less than 5 pm/degrees C, almost eleven times less than that of normal silicon waveguides. The optical loss of a 350-nm bent waveguide (with a radius of 15 microm) is extracted from the ring transmission spectrum. The scattering loss is reduced to an acceptable level of about 50 dB/cm after overlaying a polymer cladding. (c) 2009 Optical Society of America

All silicon electrode photocapacitor for integrated energy storage and conversion.

PubMed

Cohn, Adam P; Erwin, William R; Share, Keith; Oakes, Landon; Westover, Andrew S; Carter, Rachel E; Bardhan, Rizia; Pint, Cary L

2015-04-08

We demonstrate a simple wafer-scale process by which an individual silicon wafer can be processed into a multifunctional platform where one side is adapted to replace platinum and enable triiodide reduction in a dye-sensitized solar cell and the other side provides on-board charge storage as an electrochemical supercapacitor. This builds upon electrochemical fabrication of dual-sided porous silicon and subsequent carbon surface passivation for silicon electrochemical stability. The utilization of this silicon multifunctional platform as a combined energy storage and conversion system yields a total device efficiency of 2.1%, where the high frequency discharge capability of the integrated supercapacitor gives promise for dynamic load-leveling operations to overcome current and voltage fluctuations during solar energy harvesting.

Studies on the Biochemistry and Fine Structure of Silica Shell Formation in Diatoms. Chemical Composition of Navicula pelliculosa during Silicon-Starvation Synchrony 1

PubMed Central

Coombs, J.; Darley, W. M.; Holm-Hansen, O.; Volcani, B. E.

1967-01-01

Changes are reported in total cellular organic carbon, nucleic acids, proteins, carbohydrates, lipids and chlorophylls during the course of silicon-starvation synchrony of Navicula pelliculosa. All constituents increased at the same rate, relative to cell number, for 30 hours of exponential growth during which silicon was depleted from the medium. Increase in cell number then stopped, but net synthesis of most components continued for a further 5 to 7 hours before ceasing. Deoxyribonucleic acids and lipids accumulated throughout the 14 hour silicon-starvation period. When silicon was resupplied, lipid synthesis ceased and organic carbon and carbohydrates decreased slightly. Net synthesis remained low during the 4 hour silicon uptake period but was resumed at higher rates as cell number began to rise. In cultures transferred to the dark 1 hour prior to readdition of silicon, total carbon, carbohydrates, and lipids decreased markedly during silicon uptake and cell separation. This was due in part to conversion of protein which maintained the protein level of the dark cells close to that of cells kept in the light. Mechanisms by which silicon starvation and reintroduction of silicon might affect rates of cellular synthesis are discussed. PMID:6080872

Gauge Factor and Stretchability of Silicon-on-Polymer Strain Gauges

PubMed Central

Yang, Shixuan; Lu, Nanshu

2013-01-01

Strain gauges are widely applied to measure mechanical deformation of structures and specimens. While metallic foil gauges usually have a gauge factor slightly over 2, single crystalline silicon demonstrates intrinsic gauge factors as high as 200. Although silicon is an intrinsically stiff and brittle material, flexible and even stretchable strain gauges have been achieved by integrating thin silicon strips on soft and deformable polymer substrates. To achieve a fundamental understanding of the large variance in gauge factor and stretchability of reported flexible/stretchable silicon-on-polymer strain gauges, finite element and analytically models are established to reveal the effects of the length of the silicon strip, and the thickness and modulus of the polymer substrate. Analytical results for two limiting cases, i.e., infinitely thick substrate and infinitely long strip, have found good agreement with FEM results. We have discovered that strains in silicon resistor can vary by orders of magnitude with different substrate materials whereas strip length or substrate thickness only affects the strain level mildly. While the average strain in silicon reflects the gauge factor, the maximum strain in silicon governs the stretchability of the system. The tradeoff between gauge factor and stretchability of silicon-on-polymer strain gauges has been proposed and discussed. PMID:23881128

Modulating the band structure and sub-bandgap absorption of Co-hyperdoped silicon by co-doping with shallow-level elements

NASA Astrophysics Data System (ADS)

Dong, Xiao; Fang, Xiuxiu; Wang, Yongyong; Song, Xiaohui; Lu, Zhansheng

2018-06-01

Hyperdoped group-III elements can lower the Fermi energy in the band structures of Co-hyperdoped silicon. When the Co-to-X (X = B, Al, Ga) ratio is 2:1, the intermediate band (IB) in the bandgap includes the Fermi energy and is partially filled by electrons, which is in accordance with the requirement of an IB material. The hyperdoped X atoms can cause the blueshift of the sub-bandgap absorption of the compound compared with the material with no shallow-level elements, which is due to the enlargement of the electronic excitation energy of the Co,X-co-doped silicon.

Development of disulfiram-loaded vaginal rings for the localised treatment of cervical cancer.

PubMed

Boyd, Peter; Major, Ian; Wang, Weiguang; McConville, Christopher

2014-11-01

Cervical cancer is the third most prevalent cancer in women and disproportionately affects those in low resource settings due to limited programs for screening and prevention. In the developed world treatment for the disease in the non-metastasised state usually takes the form of surgical intervention and/or radiotherapy. In the developing world such techniques are less widely available. This paper describes the development of an intravaginal ring for the localised delivery of a chemotherapeutic drug to the cervix that has the potential to reduce the need for surgical intervention and will also provide a novel anti-cancer therapy for women in low resource settings. Disulfiram has demonstrated antineoplastic action against prostate, breast and lung cancer. Both PEVA and silicone elastomer were investigated for suitability as materials in the manufacture of DSF eluting intravaginal rings. DSF inhibited the curing process of the silicone elastomer, therefore PEVA was chosen as the material to manufacture the DSF-loaded vaginal rings. The vaginal rings had an excellent content uniformity while the DSF remained stable throughout the manufacturing process. Furthermore, the rings provided diffusion controlled release of DSF at levels well in excess of the IC50 value for the HeLa cervical cancer cell line. Copyright © 2014 Elsevier B.V. All rights reserved.

Effect of wheel speed on magnetic and mechanical properties of melt spun Fe-6.5 wt.% Si high silicon steel

DOE Office of Scientific and Technical Information (OSTI.GOV)

Ouyang, Gaoyuan; Jensen, Brandt; Tang, Wei

Here, Fe-Si electric steel is the most widely used soft magnetic material in electric machines and transformers. Increasing the silicon content from 3.2 wt.% to 6.5 wt.% brings about large improvement in the magnetic and electrical properties. However, 6.5 wt.% silicon steel is inherited with brittleness owing to the formation of B2 and D0 3 ordered phase. To obtain ductility in Fe-6.5wt.% silicon steel, the ordered phase has to be bypassed with methods like rapid cooling. In present paper, the effect of cooling rate on magnetic and mechanical properties of Fe-6.5wt.% silicon steel is studied by tuning the wheel speedmore » during melt spinning process. The cooling rate significantly alters the ordering and microstructure, and thus the mechanical and magnetic properties. X-ray diffraction data shows that D0 3 ordering was fully suppressed at high wheel speeds but starts to nucleate at 10m/s and below, which correlates with the increase of Young’s modulus towards low wheel speeds as tested by nanoindentation. The grain sizes of the ribbons on the wheel side decrease with increasing wheel speeds, ranging from ~100 μm at 1m/s to ~8 μm at 30m/s, which lead to changes in coercivity.« less

Effect of wheel speed on magnetic and mechanical properties of melt spun Fe-6.5 wt.% Si high silicon steel

DOE PAGES

Ouyang, Gaoyuan; Jensen, Brandt; Tang, Wei; ...

2017-12-19

Here, Fe-Si electric steel is the most widely used soft magnetic material in electric machines and transformers. Increasing the silicon content from 3.2 wt.% to 6.5 wt.% brings about large improvement in the magnetic and electrical properties. However, 6.5 wt.% silicon steel is inherited with brittleness owing to the formation of B2 and D0 3 ordered phase. To obtain ductility in Fe-6.5wt.% silicon steel, the ordered phase has to be bypassed with methods like rapid cooling. In present paper, the effect of cooling rate on magnetic and mechanical properties of Fe-6.5wt.% silicon steel is studied by tuning the wheel speedmore » during melt spinning process. The cooling rate significantly alters the ordering and microstructure, and thus the mechanical and magnetic properties. X-ray diffraction data shows that D0 3 ordering was fully suppressed at high wheel speeds but starts to nucleate at 10m/s and below, which correlates with the increase of Young’s modulus towards low wheel speeds as tested by nanoindentation. The grain sizes of the ribbons on the wheel side decrease with increasing wheel speeds, ranging from ~100 μm at 1m/s to ~8 μm at 30m/s, which lead to changes in coercivity.« less

Recycling WEEE: Extraction and concentration of silver from waste crystalline silicon photovoltaic modules.

PubMed

Dias, Pablo; Javimczik, Selene; Benevit, Mariana; Veit, Hugo; Bernardes, Andréa Moura

2016-11-01

Photovoltaic modules (or panels) are important power generators with limited lifespans. The modules contain known pollutants and valuable materials such as silicon, silver, copper, aluminum and glass. Thus, recycling such waste is of great importance. To date, there have been few published studies on recycling silver from silicon photovoltaic panels, even though silicon technology represents the majority of the photovoltaic market. In this study, the extraction of silver from waste modules is justified and evaluated. It is shown that the silver content in crystalline silicon photovoltaic modules reaches 600g/t. Moreover, two methods to concentrate silver from waste modules were studied, and the use of pyrolysis was evaluated. In the first method, the modules were milled, sieved and leached in 64% nitric acid solution with 99% sodium chloride; the silver concentration yield was 94%. In the second method, photovoltaic modules were milled, sieved, subjected to pyrolysis at 500°C and leached in 64% nitric acid solution with 99% sodium chloride; the silver concentration yield was 92%. The first method is preferred as it consumes less energy and presents a higher yield of silver. This study shows that the use of pyrolysis does not assist in the extraction of silver, as the yield was similar for both methods with and without pyrolysis. Copyright © 2016 Elsevier Ltd. All rights reserved.

Effect of wheel speed on magnetic and mechanical properties of melt spun Fe-6.5 wt.% Si high silicon steel

NASA Astrophysics Data System (ADS)

Ouyang, Gaoyuan; Jensen, Brandt; Tang, Wei; Dennis, Kevin; Macziewski, Chad; Thimmaiah, Srinivasa; Liang, Yongfeng; Cui, Jun

2018-05-01

Fe-Si electric steel is the most widely used soft magnetic material in electric machines and transformers. Increasing the silicon content from 3.2 wt.% to 6.5 wt.% brings about large improvement in the magnetic and electrical properties. However, 6.5 wt.% silicon steel is inherited with brittleness owing to the formation of B2 and D03 ordered phase. To obtain ductility in Fe-6.5wt.% silicon steel, the ordered phase has to be bypassed with methods like rapid cooling. In present paper, the effect of cooling rate on magnetic and mechanical properties of Fe-6.5wt.% silicon steel is studied by tuning the wheel speed during melt spinning process. The cooling rate significantly alters the ordering and microstructure, and thus the mechanical and magnetic properties. X-ray diffraction data shows that D03 ordering was fully suppressed at high wheel speeds but starts to nucleate at 10m/s and below, which correlates with the increase of Young's modulus towards low wheel speeds as tested by nanoindentation. The grain sizes of the ribbons on the wheel side decrease with increasing wheel speeds, ranging from ˜100 μm at 1m/s to ˜8 μm at 30m/s, which lead to changes in coercivity.

Soft contact lens biomaterials from bioinspired phospholipid polymers.

PubMed

Goda, Tatsuro; Ishihara, Kazuhiko

2006-03-01

Soft contact lens (SCL) biomaterials originated from the discovery of a poly(2-hydroxyethyl methacrylate) (poly[HEMA])-based hydrogel in 1960. Incorporation of hydrophilic polymers into poly(HEMA) hydrogels was performed in the 1970-1980s, which brought an increase in the equilibrium water content, leading to an enhancement of the oxygen permeability. Nowadays, the poly(HEMA)-based hydrogels have been applied in disposable SCL. At the same time, high oxygen-permeable silicone hydrogels were produced, which made it possible to continually wear SCL. Recently, numerous trials for improving the water wettability of silicone hydrogels have been performed. However, little attention has been paid to improving their anti-biofouling properties and biocompatibility. Since biomimetic phospholipid polymers possess excellent anti-biofouling properties and biocompatibility they have the potential to play a valuable role in the surface modification of the silicone hydrogel. The representative phospholipid polymers containing a 2-methacryloyloxyethyl phosphorylcholine (MPC) unit suppressed nonspecific protein adsorption, increased cell compatibility and contributed to blood compatible biomaterials. The MPC polymer coating on the silicone hydrogel improved its water wettability and biocompatibility, while maintaining high oxygen permeability compared with the original silicone hydrogel. Furthermore, the newly prepared phospholipid-type intermolecular crosslinker made it possible to synthesize a 100% phospholipid polymer hydrogel that can enhance the anti-biofouling properties and biocompatibility. In this review, the authors discuss how polymer hydrogels should be designed in order to obtain a biocompatible SCL and future perspectives.

Influence of External Beam Radiotherapy on the Properties of Polymethyl Methacrylate-Versus Silicone-Induced Membranes in a Bilateral Segmental Bone Defect in Rats.

PubMed

Sagardoy, Thomas; Ehret, Camille; Bareille, Reine; Benoit, Jérôme; Amedee, Joëlle; De Mones, Erwan

2018-05-01

Standard care for malignant tumors arising next to a bone structure is surgical removal with safety margins, followed by external beam radiotherapy (EBRT). Complete tumor removal can result in large bone defects. A two-step bone reconstruction technique using the induced membrane (IM) technique has proven its efficacy to bridge gap nonunion. During the first step, a spacer is placed in the bone gap. The spacer then is removed and the IM around it is filled with autologous cancellous bone graft. However, the feasibility of this technique with the addition of adjuvant EBRT between the two reconstruction steps has not yet been studied. Polymethyl methacrylate (PMMA) used to be the standard spacer material for the first step. Silicone spacers could replace them owing to their good behavior when submitted to EBRT and their easier removal from the surgical site during the second step. The aim of this study was to evaluate the influence of EBRT on the histological and biochemical properties of IM induced using PMMA or silicone as spacer. The analyses were performed on PMMA- or silicone-IM with and without EBRT in a 6-mm bilateral femoral defect in 32 rats. Thickness and vessel content were measured in both groups. Bone morphogenetic protein 2 (BMP2) and vascular endothelial growth factor (VEGF) content in lysates of the crushed membranes were measured by enzyme immunoassay. Finally, alkaline phosphatase activity was analyzed in human bone marrow stromal cell cultures in contact with the same lysates. EBRT did not change the histological structure of the cellular internal layer or the fibrous outer layer. The nature of the spacer only influenced IM thickness, PMMA-IM with external radiotherapy being significantly thicker. EBRT decreased the vascular density of IM but was less effective on VEGF/BMP2 production. In vitro, IM could have an osteoinductive potential on human bone marrow stem cells. EBRT did not modify the histological properties of IMs but decreased their vascular density. VEGF and BMP2 production within IMs was not affected by EBRT. Silicone spacers are able to induce membranes with similar histological characteristics to PMMA-IM.

Electron spin resonance and spin-valley physics in a silicon double quantum dot.

PubMed

Hao, Xiaojie; Ruskov, Rusko; Xiao, Ming; Tahan, Charles; Jiang, HongWen

2014-05-14

Silicon quantum dots are a leading approach for solid-state quantum bits. However, developing this technology is complicated by the multi-valley nature of silicon. Here we observe transport of individual electrons in a silicon CMOS-based double quantum dot under electron spin resonance. An anticrossing of the driven dot energy levels is observed when the Zeeman and valley splittings coincide. A detected anticrossing splitting of 60 MHz is interpreted as a direct measure of spin and valley mixing, facilitated by spin-orbit interaction in the presence of non-ideal interfaces. A lower bound of spin dephasing time of 63 ns is extracted. We also describe a possible experimental evidence of an unconventional spin-valley blockade, despite the assumption of non-ideal interfaces. This understanding of silicon spin-valley physics should enable better control and read-out techniques for the spin qubits in an all CMOS silicon approach.

Impact-Resistant Ceramic Coating

NASA Technical Reports Server (NTRS)

Wheeler, W. H.; Creedon, J. F.; Izu, Y. D.

1986-01-01

Refractory fibers more than double strength of coating. Impact strengths of ceramic coatings increase with increasing whisker content. Silicon carbide whiskers clearly produce largest increase, and improvement grows even more with high-temperature sintering. Coating also improves thermal and mechanical properties of electromagnetic components, mirrors, furnace linings, and ceramic parts of advanced internal-combustion engines.

Determination of Protein Content by NIR Spectroscopy in Protein Powder Mix Products.

PubMed

Ingle, Prashant D; Christian, Roney; Purohit, Piyush; Zarraga, Veronica; Handley, Erica; Freel, Keith; Abdo, Saleem

2016-01-01

Protein is a principal component in commonly used dietary supplements and health food products. The analysis of these products, within the consumer package form, is of critical importance for the purpose of ensuring quality and supporting label claims. A rapid test method was developed using near-infrared (NIR) spectroscopy as a compliment to current protein determination by the Dumas combustion method. The NIR method was found to be a rapid, low-cost, and green (no use of chemicals and reagents) complimentary technique. The protein powder samples analyzed in this study were in the range of 22-90% protein. The samples were prepared as mixtures of soy protein, whey protein, and silicon dioxide ingredients, which are common in commercially sold protein powder drink-mix products in the market. A NIR regression model was developed with 17 samples within the constituent range and was validated with 20 independent samples of known protein levels (85-88%). The results show that the NIR method is capable of predicting the protein content with a bias of ±2% and a maximum bias of 3% between NIR and the external Dumas method.

Improving optical properties of silicon nitride films to be applied in the middle infrared optics by a combined high-power impulse/unbalanced magnetron sputtering deposition technique.

PubMed

Liao, Bo-Huei; Hsiao, Chien-Nan

2014-02-01

Silicon nitride films are prepared by a combined high-power impulse/unbalanced magnetron sputtering (HIPIMS/UBMS) deposition technique. Different unbalance coefficients and pulse on/off ratios are applied to improve the optical properties of the silicon nitride films. The refractive indices of the Si3N4 films vary from 2.17 to 2.02 in the wavelength ranges of 400-700 nm, and all the extinction coefficients are smaller than 1×10(-4). The Fourier transform infrared spectroscopy and x-ray diffractometry measurements reveal the amorphous structure of the Si3N4 films with extremely low hydrogen content and very low absorption between the near IR and middle IR ranges. Compared to other deposition techniques, Si3N4 films deposited by the combined HIPIMS/UBMS deposition technique possess the highest refractive index, the lowest extinction coefficient, and excellent structural properties. Finally a four-layer coating is deposited on both sides of a silicon substrate. The average transmittance from 3200 to 4800 nm is 99.0%, and the highest transmittance is 99.97% around 4200 nm.

Accurate control of oxygen level in cells during culture on silicone rubber membranes with application to stem cell differentiation.

PubMed

Powers, Daryl E; Millman, Jeffrey R; Bonner-Weir, Susan; Rappel, Michael J; Colton, Clark K

2010-01-01

Oxygen level in mammalian cell culture is often controlled by placing culture vessels in humidified incubators with a defined gas phase partial pressure of oxygen (pO(2gas)). Because the cells are consuming oxygen supplied by diffusion, a difference between pO(2gas) and that experienced by the cells (pO(2cell)) arises, which is maximal when cells are cultured in vessels with little or no oxygen permeability. Here, we demonstrate theoretically that highly oxygen-permeable silicone rubber membranes can be used to control pO(2cell) during culture of cells in monolayers and aggregates much more accurately and can achieve more rapid transient response following a disturbance than on polystyrene and fluorinated ethylene-propylene copolymer membranes. Cell attachment on silicone rubber was achieved by physical adsorption of fibronectin or Matrigel. We use these membranes for the differentiation of mouse embryonic stem cells to cardiomyocytes and compare the results with culture on polystyrene or on silicone rubber on top of polystyrene. The fraction of cells that are cardiomyocyte-like increases with decreasing pO(2) only when using oxygen-permeable silicone membrane-based dishs, which contract on silicone rubber but not polystyrene. The high permeability of silicone rubber results in pO(2cell) being equal to pO(2gas) at the tissue-membrane interface. This, together with geometric information from histological sections, facilitates development of a model from which the pO(2) distribution within the resulting aggregates is computed. Silicone rubber membranes have significant advantages over polystyrene in controlling pO(2cell), and these results suggest they are a valuable tool for investigating pO(2) effects in many applications, such as stem cell differentiation. Copyright 2009 American Institute of Chemical Engineers

PAH toxicity at aqueous solubility in the fish embryo test with Danio rerio using passive dosing.

PubMed

Seiler, Thomas-Benjamin; Best, Nina; Fernqvist, Margit Møller; Hercht, Hendrik; Smith, Kilian E C; Braunbeck, Thomas; Mayer, Philipp; Hollert, Henner

2014-10-01

As part of the risk assessment process within REACh, prior to manufacturing and distribution of chemical substances their (eco)toxicological impacts have to be investigated. The fish embryo toxicity test (FET) with the zebrafish Danio rerio has gained a high significance as an in vitro alternative to animal testing in (eco)toxicology. However, for hydrophobic organic chemicals it remains a technical challenge to ensure constant freely dissolved concentration at the maximum exposure level during such biotests. Passive dosing with PDMS silicone was thus applied to control the freely dissolved concentration of ten PAHs at their saturation level in the FET. The experiments gave repeatable results, with the toxicity of the PAHs generally increasing with the maximum chemical activities of the PAHs. HPLC analysis confirmed constant exposure at the saturation level. In additional experiments, fish embryos without direct contact to the silicone surface showed similar mortalities as those exposed with direct contact to the silicone. Silicone oil overlaying the water phase as a novel passive dosing phase had no observable effects on the development of the fish embryos until hatching. This study provides further data to support the close relationship between the chemical activity and the toxicity of hydrophobic organic compounds. Passive dosing from PDMS silicone enabled reliable toxicity testing of (highly) hydrophobic substances at aqueous solubility, providing a practical way to control toxicity exactly at the maximum exposure level. This approach is therefore expected to be useful as a cost-effective initial screening of hydrophobic chemicals for potential adverse effects to freshwater vertebrates. Copyright © 2014 Elsevier Ltd. All rights reserved.

System-level integration of active silicon photonic biosensors

NASA Astrophysics Data System (ADS)

Laplatine, L.; Al'Mrayat, O.; Luan, E.; Fang, C.; Rezaiezadeh, S.; Ratner, D. M.; Cheung, K.; Dattner, Y.; Chrostowski, L.

2017-02-01

Biosensors based on silicon photonic integrated circuits have attracted a growing interest in recent years. The use of sub-micron silicon waveguides to propagate near-infrared light allows for the drastic reduction of the optical system size, while increasing its complexity and sensitivity. Using silicon as the propagating medium also leverages the fabrication capabilities of CMOS foundries, which offer low-cost mass production. Researchers have deeply investigated photonic sensor devices, such as ring resonators, interferometers and photonic crystals, but the practical integration of silicon photonic biochips as part of a complete system has received less attention. Herein, we present a practical system-level architecture which can be employed to integrate the aforementioned photonic biosensors. We describe a system based on 1 mm2 dies that integrate germanium photodetectors and a single light coupling device. The die are embedded into a 16x16 mm2 epoxy package to enable microfluidic and electrical integration. First, we demonstrate a simple process to mimic Fan-Out Wafer-level-Packaging, which enables low-cost mass production. We then characterize the photodetectors in the photovoltaic mode, which exhibit high sensitivity at low optical power. Finally, we present a new grating coupler concept to relax the lateral alignment tolerance down to +/- 50 μm at 1-dB (80%) power penalty, which should permit non-experts to use the biochips in a"plug-and-play" style. The system-level integration demonstrated in this study paves the way towards the mass production of low-cost and highly sensitive biosensors, and can facilitate their wide adoption for biomedical and agro-environmental applications.

Direct metallization local Al-back surface field for high efficiency screen printed crystalline silicon solar cells.

PubMed

Lee, Jonghwan; Park, Cheolmin; Dao, Vinh Ai; Lee, Youn-Jung; Ryu, Kyungyul; Choi, Gyuho; Kim, Bonggi; Ju, Minkyu; Jeong, Chaehwan; Yi, Junsin

2013-11-01

In this paper, we present a detailed study on the local back contact (LBC) formation of rear-surface-passivated silicon solar cells, where both the LBC opening and metallization are realized by one-step alloying of a dot of fine pattern screen-printed aluminum paste with the silicon substrate. Based on energy dispersive spectrometer (EDS) and scanning electron microscopy (SEM) characterizations, we suggest that the aluminum distribution and the silicon concentration determine the local-back-surface-field (Al-p+) layer thickness, resistivity of the Al-p+ and hence the quality of the Al-p+ formation. The highest penetration of silicon concentration of 78.17% in aluminum resulted in the formation of a 5 microm-deep Al-p+ layer, and the minimum LBC resistivity of 0.92 x 10-6 omega cm2. The degradation of the rear-surface passivation due to high temperature of the LBC formation process can be fully recovered by forming gas annealing (FGA) at temperature and hydrogen content of 450 degrees C and 15%, respectively. The application of the optimized LBC of rear-surface-passivated by a dot of fine pattern screen(-) printed aluminum paste resulted in efficiency of up to 19.98% for the p-type czochralski (CZ) silicon wafers with 10.24 cm2 cell size at 649 mV open circuit voltage. By FGA for rear-surface passivation recovery, efficiencies up to 20.35% with a V(OC) of 662 mV, FF of 82%, and J(SC) of 37.5 mA/cm2 were demonstrated.

High-pressure melting experiments on Fe-Si alloys and implications for silicon as a light element in the core

NASA Astrophysics Data System (ADS)

Ozawa, Haruka; Hirose, Kei; Yonemitsu, Kyoko; Ohishi, Yasuo

2016-12-01

We carried out melting experiments on Fe-Si alloys to 127 GPa in a laser-heated diamond-anvil cell (DAC). On the basis of textural and chemical characterizations of samples recovered from a DAC, a change in eutectic liquid composition in the Fe-FeSi binary system was examined with increasing pressure. The chemical compositions of coexisting liquid and solid phases were quantitatively determined with field-emission-type electron microprobes. The results demonstrate that silicon content in the eutectic liquid decreases with increasing pressure to less than 1.5 ± 0.1 wt.% Si at 127 GPa. If silicon is a single light element in the core, 4.5 to 12 wt.% Si is required in the outer core in order to account for its density deficit from pure iron. However, such a liquid core, whose composition is on the Si-rich side of the eutectic point, crystallizes less dense solid, CsCl (B2)-type phase at the inner core boundary (ICB). Our data also show that the difference in silicon concentration between coexisting solid and liquid is too small to account for the observed density contrast across the ICB. These indicate that silicon cannot be the sole light element in the core. Previous geochemical and cosmochemical arguments, however, strongly require ∼6 wt.% Si in the core. It is possible that the Earth's core originally included ∼6 wt.% Si but then became depleted in silicon by crystallizing SiO2 or MgSiO3.

Defect annealing in electron-irradiated boron-doped silicon

NASA Astrophysics Data System (ADS)

Awadelkarim, O. O.; Chen, W. M.; Weman, H.; Monemar, B.

1990-01-01

Defects introduced by room-temperature electron irradiation and subsequent annealing in boron-doped silicon are studied by means of deep-level transient spectroscopy, photoluminescence, and optical detection of magnetic resonance (ODMR) techniques. ODMR reveals a thermally induced paramagnetic (S=(1/2) defect center that is produced following annealing at 400 °C. The center possesses a C3v point-group symmetry with the trigonal axis along <111>. Detailed analysis of the ODMR line shapes indicates the involvement of a silicon atom in the defect center. It appears from the results that boron is either another possible defect component or an essential catalyst for the defect formation. The occurrence of the ODMR signal together with a luminescence band peaking at 0.80 eV is independent of oxygen or carbon contents in the samples. The band does not belong to the center observed by ODMR; however, a decrease in its intensity, under resonance conditions in the ODMR center, is explained in terms of carrier recombination, capture, or energy-transfer processes involving this center. Annealing studies on a metastable hole trap observed at Ev+0.12 eV (Ev being the top of the valence band) establish the trap assignment to a carbon-interstitial-carbon-substitutional pair. The introduction of postannealing traps observed at Ev+0.07 eV, Ev+0.45 eV, and Ec-0.59 eV (Ec being the conduction-band edge) is found to be boron dependent. Isothermal formation of the centers responsible for these traps are observed, and none of the traps appears to be related to either the center observed by ODMR or the 0.80-eV band.

Lifetime degradation of n-type Czochralski silicon after hydrogenation

NASA Astrophysics Data System (ADS)

Vaqueiro-Contreras, M.; Markevich, V. P.; Mullins, J.; Halsall, M. P.; Murin, L. I.; Falster, R.; Binns, J.; Coutinho, J.; Peaker, A. R.

2018-04-01

Hydrogen plays an important role in the passivation of interface states in silicon-based metal-oxide semiconductor technologies and passivation of surface and interface states in solar silicon. We have shown recently [Vaqueiro-Contreras et al., Phys. Status Solidi RRL 11, 1700133 (2017)] that hydrogenation of n-type silicon slices containing relatively large concentrations of carbon and oxygen impurity atoms {[Cs] ≥ 1 × 1016 cm-3 and [Oi] ≥ 1017 cm-3} can produce a family of C-O-H defects, which act as powerful recombination centres reducing the minority carrier lifetime. In this work, evidence of the silicon's lifetime deterioration after hydrogen injection from SiNx coating, which is widely used in solar cell manufacturing, has been obtained from microwave photoconductance decay measurements. We have characterised the hydrogenation induced deep level defects in n-type Czochralski-grown Si samples through a series of deep level transient spectroscopy (DLTS), minority carrier transient spectroscopy (MCTS), and high-resolution Laplace DLTS/MCTS measurements. It has been found that along with the hydrogen-related hole traps, H1 and H2, in the lower half of the gap reported by us previously, hydrogenation gives rise to two electron traps, E1 and E2, in the upper half of the gap. The activation energies for electron emission from the E1 and E2 trap levels have been determined as 0.12, and 0.14 eV, respectively. We argue that the E1/H1 and E2/H2 pairs of electron/hole traps are related to two energy levels of two complexes, each incorporating carbon, oxygen, and hydrogen atoms. Our results show that the detrimental effect of the C-O-H defects on the minority carrier lifetime in n-type Si:O + C materials can be very significant, and the carbon concentration in Czochralski-grown silicon is a key parameter in the formation of the recombination centers.

High temperature and low pressure chemical vapor deposition of silicon nitride on AlGaN: Band offsets and passivation studies

DOE Office of Scientific and Technical Information (OSTI.GOV)

Reddy, Pramod; Washiyama, Shun; Kaess, Felix

2016-04-14

In this work, we employed X-ray photoelectron spectroscopy to determine the band offsets and interface Fermi level at the heterojunction formed by stoichiometric silicon nitride deposited on Al{sub x}Ga{sub 1-x}N (of varying Al composition “x”) via low pressure chemical vapor deposition. Silicon nitride is found to form a type II staggered band alignment with AlGaN for all Al compositions (0 ≤ x ≤ 1) and present an electron barrier into AlGaN even at higher Al compositions, where E{sub g}(AlGaN) > E{sub g}(Si{sub 3}N{sub 4}). Further, no band bending is observed in AlGaN for x ≤ 0.6 and a reduced band bending (by ∼1 eV in comparison to that atmore » free surface) is observed for x > 0.6. The Fermi level in silicon nitride is found to be at 3 eV with respect to its valence band, which is likely due to silicon (≡Si{sup 0/−1}) dangling bonds. The presence of band bending for x > 0.6 is seen as a likely consequence of Fermi level alignment at Si{sub 3}N{sub 4}/AlGaN hetero-interface and not due to interface states. Photoelectron spectroscopy results are corroborated by current-voltage-temperature and capacitance-voltage measurements. A shift in the interface Fermi level (before band bending at equilibrium) from the conduction band in Si{sub 3}N{sub 4}/n-GaN to the valence band in Si{sub 3}N{sub 4}/p-GaN is observed, which strongly indicates a reduction in mid-gap interface states. Hence, stoichiometric silicon nitride is found to be a feasible passivation and dielectric insulation material for AlGaN at any composition.« less

Chemical bonding in silicon-carbene complexes.

PubMed

Liu, Z

2009-06-04

The bonding situations in the newly synthesized silicon-carbene complexes with formulas L:SiCl4, L:(Cl)Si-Si(Cl):L, and L:Si=Si:L (where L: is an N-heterocyclic carbene), are reported using density functional theory at the BP86/TZ2P level. The bonding analysis clearly shows that the bonding situation in the silicon-carbene complexes cannot be described in terms of donor-acceptor interactions depicted in the Dewar-Chatt-Duncanson model. The energy decomposition analysis (EDA) shows that the electrostatic attraction plays an important or even dominant role for the Si-C(carbene) binding interactions in the silicon-carbene complexes. That the molecular orbitals of the silicon-carbene complexes are lower in energy than the parent orbitals of carbenes indicates that these complexes are better described as stabilized carbene complexes.

Electrically Active Defects In Solar Cells Based On Amorphous Silicon/Crystalline Silicon Heterojunction After Irradiation By Heavy Xe Ions

NASA Astrophysics Data System (ADS)

Harmatha, Ladislav; Mikolášek, Miroslav; Stuchlíková, L'ubica; Kósa, Arpád; Žiška, Milan; Hrubčín, Ladislav; Skuratov, Vladimir A.

2015-11-01

The contribution is focused on the diagnostics of structures with a heterojunction between amorphous and crystalline silicon prepared by HIT (Heterojunction with an Intrinsic Thin layer) technology. The samples were irradiated by Xe ions with energy 167 MeV and doses from 5 × 108 cm-2 to 5 × 1010 cm-2. Radiation defects induced in the bulk of Si and at the hydrogenated amorphous silicon and crystalline silicon (a-Si:H/c-Si) interface were identified by Deep Level Transient Spectroscopy (DLTS). Radiation induced A-centre traps, boron vacancy traps and different types of divacancies with a high value of activation energy were observed. With an increased fluence of heavy ions the nature and density of the radiation induced defects was changed.

Rolling-element fatigue life of silicon nitride balls. [as compared to that of steel, ceramic, and cermet materials

NASA Technical Reports Server (NTRS)

Parker, R. J.; Zaretsky, E. V.

1974-01-01

The five-ball fatigue tester was used to evaluate silicon nitride as a rolling-element bearing material. Results indicate that hot-pressed silicon nitride running against steel may be expected to yield fatigue lives comparable to or greater than those of bearing quality steel running against steel at stress levels typical rolling-element bearing application. The fatigue life of hot-pressed silicon nitride is considerably greater than that of any ceramic or cermet tested. Computer analysis indicates that there is no improvement in the lives of 120-mm-bore angular--contact ball bearings of the same geometry operating at DN values from 2 to 4 million where hot-pressed silicon nitride balls are used in place of steel balls.

Influence of the doping level on the porosity of silicon nanowires prepared by metal-assisted chemical etching

NASA Astrophysics Data System (ADS)

Geyer, Nadine; Wollschläger, Nicole; Fuhrmann, Bodo; Tonkikh, Alexander; Berger, Andreas; Werner, Peter; Jungmann, Marco; Krause-Rehberg, Reinhard; Leipner, Hartmut S.

2015-06-01

A systematic method to control the porosity of silicon nanowires is presented. This method is based on metal-assisted chemical etching (MACE) and takes advantage of an HF/H2O2 etching solution and a silver catalyst in the form of a thin patterned film deposited on a doped silicon wafer. It is found that the porosity of the etched nanowires can be controlled by the doping level of the wafer. For low doping concentrations, the wires are primarily crystalline and surrounded by only a very thin layer of porous silicon (pSi) layer, while for highly doped silicon, they are porous in their entire volume. We performed a series of controlled experiments to conclude that there exists a well-defined critical doping concentration separating the crystalline and porous regimes. Furthermore, transmission electron microscopy investigations showed that the pSi has also a crystalline morphology on a length scale smaller than the pore size, determined from positron annihilation lifetime spectroscopy to be mesoscopic. Based on the experimental evidence, we devise a theoretical model of the pSi formation during MACE and apply it for better control of the nanowire morphology.

Low cost silicon solar array project large area silicon sheet task: Silicon web process development

NASA Technical Reports Server (NTRS)

Duncan, C. S.; Seidensticker, R. G.; Mchugh, J. P.; Blais, P. D.; Davis, J. R., Jr.

1977-01-01

Growth configurations were developed which produced crystals having low residual stress levels. The properties of a 106 mm diameter round crucible were evaluated and it was found that this design had greatly enhanced temperature fluctuations arising from convection in the melt. Thermal modeling efforts were directed to developing finite element models of the 106 mm round crucible and an elongated susceptor/crucible configuration. Also, the thermal model for the heat loss modes from the dendritic web was examined for guidance in reducing the thermal stress in the web. An economic analysis was prepared to evaluate the silicon web process in relation to price goals.

Metal-assisted chemical etch porous silicon formation method

DOEpatents

Li, Xiuling; Bohn, Paul W.; Sweedler, Jonathan V.

2004-09-14

A thin discontinuous layer of metal such as Au, Pt, or Au/Pd is deposited on a silicon surface. The surface is then etched in a solution including HF and an oxidant for a brief period, as little as a couple seconds to one hour. A preferred oxidant is H.sub.2 O.sub.2. Morphology and light emitting properties of porous silicon can be selectively controlled as a function of the type of metal deposited, Si doping type, silicon doping level, and/or etch time. Electrical assistance is unnecessary during the chemical etching of the invention, which may be conducted in the presence or absence of illumination.

Large area sheet task. Advanced dendritic web growth development. [silicon films

NASA Technical Reports Server (NTRS)

Duncan, C. S.; Seidensticker, R. G.; Mchugh, J. P.; Hopkins, R. H.; Meier, D.; Frantti, E.; Schruben, J.

1981-01-01

The development of a silicon dendritic web growth machine is discussed. Several refinements to the sensing and control equipment for melt replenishment during web growth are described and several areas for cost reduction in the components of the prototype automated web growth furnace are identified. A circuit designed to eliminate the sensitivity of the detector signal to the intensity of the reflected laser beam used to measure melt level is also described. A variable speed motor for the silicon feeder is discussed which allows pellet feeding to be accomplished at a rate programmed to match exactly the silicon removed by web growth.

Superacid Passivation of Crystalline Silicon Surfaces.

PubMed

Bullock, James; Kiriya, Daisuke; Grant, Nicholas; Azcatl, Angelica; Hettick, Mark; Kho, Teng; Phang, Pheng; Sio, Hang C; Yan, Di; Macdonald, Daniel; Quevedo-Lopez, Manuel A; Wallace, Robert M; Cuevas, Andres; Javey, Ali

2016-09-14

The reduction of parasitic recombination processes commonly occurring within the silicon crystal and at its surfaces is of primary importance in crystalline silicon devices, particularly in photovoltaics. Here we explore a simple, room temperature treatment, involving a nonaqueous solution of the superacid bis(trifluoromethane)sulfonimide, to temporarily deactivate recombination centers at the surface. We show that this treatment leads to a significant enhancement in optoelectronic properties of the silicon wafer, attaining a level of surface passivation in line with state-of-the-art dielectric passivation films. Finally, we demonstrate its advantage as a bulk lifetime and process cleanliness monitor, establishing its compatibility with large area photoluminescence imaging in the process.

Optical modulator based on silicon nanowires racetrack resonator

NASA Astrophysics Data System (ADS)

Sherif, S. M.; Shahada, L.; Swillam, M.

2018-02-01

An optical modulator based on the racetrack resonator configuration is introduced. The structure of the resonator modulator is built from silicon nanowires on silica. The cladding and voids between the silicon nanowires are filled with an electro-optic polymer. The proposed modulator is fully CMOS compatible. When the resonance is tuned to the 1.55μm wavelength, it experiences a wavelength shift upon voltage application, which is measured at the output as a change in the power level.

Treatment to Control Adhesion of Silicone-Based Elastomers

NASA Technical Reports Server (NTRS)

deGroh, Henry C., III; Puleo, Bernadette J.; Waters, Deborah L.

2013-01-01

Seals are used to facilitate the joining of two items, usually temporarily. At some point in the future, it is expected that the items will need to be separated. This innovation enables control of the adhesive properties of silicone-based elastomers. The innovation may also be effective on elastomers other than the silicone-based ones. A technique has been discovered that decreases the level of adhesion of silicone- based elastomers to negligible levels. The new technique causes less damage to the material compared to alternative adhesion mitigation techniques. Silicone-based elastomers are the only class of rubber-like materials that currently meet NASA s needs for various seal applications. However, silicone-based elastomers have natural inherent adhesive properties. This stickiness can be helpful, but it can frequently cause problems as well, such as when trying to get items apart. In the past, seal adhesion was not always adequately addressed, and has caused in-flight failures where seals were actually pulled from their grooves, preventing subsequent spacecraft docking until the seal was physically removed from the flange via an extravehicular activity (EVA). The primary method used in the past to lower elastomer seal adhesion has been the application of some type of lubricant or grease to the surface of the seal. A newer method uses ultraviolet (UV) radiation a mixture of UV wavelengths in the range of near ultraviolet (NUV) and vacuum ultraviolet (VUV) wavelengths.

Study of boron detection limit using the in-air PIGE set-up at LAMFI-USP

NASA Astrophysics Data System (ADS)

Moro, M. V.; Silva, T. F.; Trindade, G. F.; Added, N.; Tabacniks, M. H.

2014-11-01

The quantification of small amounts of boron in materials is of extreme importance in different areas of materials science. Boron is an important contaminant and also a silicon dopant in the semiconductor industry. Boron is also extensively used in nuclear power plants, either for neutron shielding or for safety control and boron is an essential nutrient for life, either vegetable or animal. The production of silicon solar cells, by refining metallurgical-grade silicon (MG-Si) requires the control and reduction of several silicon contaminants to very low concentration levels. Boron is one of the contaminants of solar-grade silicon (SG-Si) that must be controlled and quantified at sub-ppm levels. In the metallurgical purification, boron quantification is usually made by Inductive Coupled Plasma Mass Spectrometry, (ICP-MS) but the results need to be verified by an independent analytical method. In this work we present the results of the analysis of silicon samples by Particle Induced Gamma-Ray Emission (PIGE) aiming the quantification of low concentrations of boron. PIGE analysis was carried out using the in-air external beam line of the Laboratory for Materials Analysis with Ion Beans (LAMFI-USP) by the 10B ( p ,αγ(7Be nuclear reaction, and measuring the 429 keV γ-ray. The in-air PIGE measurements at LAMFI have a quantification limit of the order of 1016 at/cm2.

Radiation damage and defect behavior in proton irradiated lithium-counterdoped n+p silicon solar cells

NASA Technical Reports Server (NTRS)

Stupica, John; Goradia, Chandra; Swartz, Clifford K.; Weinberg, Irving

1987-01-01

Two lithium-counterdoped n+p silicon solar cells with different lithium concentrations were irradiated by 10-MeV protons. Cell performance was measured as a function of fluence, and it was found that the cell with the highest concentration of lithium had the highest radiation resistance. Deep level transient spectroscopy which showed two deep level defects that were lithium related. Relating the defect energy levels obtained from this study with those from earlier work using 1-MeV electron irradiation shows no correlation of the defect energy levels. There is one marked similarity: the absence of the boron-interstitial-oxygen-interstitial defect. This consistency strengthens the belief that lithium interacts with oxygen to prevent the formation of the boron interstitial-oxygen interstitial defect. The results indicate that, in general, addition of lithium in small amounts to the p-base of a boron doped silicon solar cell such that the base remains p-type, tends to increase the radiation resistance of the cell.

A system for measuring thermal activation energy levels in silicon by thermally stimulated capacitance

NASA Technical Reports Server (NTRS)

Cockrum, R. H.

1982-01-01

One method being used to determine energy level(s) and electrical activity of impurities in silicon is described. The method is called capacitance transient spectroscopy (CTS). It can be classified into three basic categories: the thermally stimulated capacitance method, the voltage-stimulated capacitance method, and the light-stimulated capacitance method; the first two categories are discussed. From the total change in capacitance and the time constant of the capacitance response, emission rates, energy levels, and trap concentrations can be determined. A major advantage of using CTS is its ability to detect the presence of electrically active impurities that are invisible to other techniques, such as Zeeman effect atomic absorption, and the ability to detect more than one electrically active impurity in a sample. Examples of detection of majority and minority carrier traps from gold donor and acceptor centers in silicon using the capacitance transient spectrometer are given to illustrate the method and its sensitivity.

Effect of hydrogen on the strength and microstructure of selected ceramics

NASA Technical Reports Server (NTRS)

Herbell, Thomas P.; Eckel, Andrew J.; Hull, David R.; Misra, Ajay K.

1990-01-01

Ceramics in monolithic form and as composite constituents in the form of fibers, matrices, and coatings are currently being considered for a variety of high-temperature applications in aeronautics and space. Many of these applications involve exposure to a hydrogen-containing environment. The compatibility of selected ceramics in gaseous high-temperature hydrogen is assessed. Environmental stability regimes for the long term use of ceramic materials are defined by the parameters of temperature, pressure, and moisture content. Thermodynamically predicted reactions between hydrogen and several monolithic ceramics are compared with actual performance in a controlled environment. Morphology of hydrogen attack and the corresponding strength degradation is reported for silicon carbide, silicon nitride, alumina, magnesia, and mullite.

Influence of Filler Alloy Composition and Process Parameters on the Intermetallic Layer Thickness in Single-Sided Cold Metal Transfer Welding of Aluminum-Steel Blanks

NASA Astrophysics Data System (ADS)

Silvayeh, Zahra; Vallant, Rudolf; Sommitsch, Christof; Götzinger, Bruno; Karner, Werner; Hartmann, Matthias

2017-11-01

Hybrid components made of aluminum alloys and high-strength steels are typically used in automotive lightweight applications. Dissimilar joining of these materials is quite challenging; however, it is mandatory in order to produce multimaterial car body structures. Since especially welding of tailored blanks is of utmost interest, single-sided Cold Metal Transfer butt welding of thin sheets of aluminum alloy EN AW 6014 T4 and galvanized dual-phase steel HCT 450 X + ZE 75/75 was experimentally investigated in this study. The influence of different filler alloy compositions and welding process parameters on the thickness of the intermetallic layer, which forms between the weld seam and the steel sheet, was studied. The microstructures of the weld seam and of the intermetallic layer were characterized using conventional optical light microscopy and scanning electron microscopy. The results reveal that increasing the heat input and decreasing the cooling intensity tend to increase the layer thickness. The silicon content of the filler alloy has the strongest influence on the thickness of the intermetallic layer, whereas the magnesium and scandium contents of the filler alloy influence the cracking tendency. The layer thickness is not uniform and shows spatial variations along the bonding interface. The thinnest intermetallic layer (mean thickness < 4 µm) is obtained using the silicon-rich filler Al-3Si-1Mn, but the layer is more than twice as thick when different low-silicon fillers are used.

Preparation of Al-Si Master Alloy by Electrochemical Reduction of Fly Ash in Molten Salt

NASA Astrophysics Data System (ADS)

Liu, Aimin; Li, Liangxing; Xu, Junli; Shi, Zhongning; Hu, Xianwei; Gao, Bingliang; Wang, Zhaowen; Yu, Jiangyu; Chen, Gong

2014-05-01

An electrochemical method on preparation of Al-Si master alloy was investigated in fluoride-based molten salts of 47.7wt.%NaF-43.3wt.%AlF3-4wt.%CaF2 containing 5 wt.% fly ash at 1233 K. The cathodic products obtained by galvanostatic electrolysis were analyzed by means of x-ray diffraction, x-ray fluorescence, scanning electron microscopy, and energy-dispersive spectrometry. The result showed that the compositions of the products are Al, Si, and Al3.21Si0.47. Meanwhile, the cathodic electrochemical process was studied by cyclic voltammetry, and the results showed the reduction peak of aluminum deposition is at -1.3 V versus the platinum quasi-reference electrode in 50.3wt.%NaF-45.7wt.%AlF3-4wt.%CaF2 molten salts, while the reduction peak at -1.3 V was the co-deposition of aluminum and silicon when the fly ash was added. The silicon and iron were formed via both co-deposition and aluminothermic reduction. In the electrolysis experiments, current efficiency first increased to a maximum value of 40.7% at a current density of 0.29 A/cm2, and then it decreased with the increase of current density. With the electrolysis time lasting, the content of aluminum in the alloys decreased from 76.05 wt.% to 48.29 wt.% during 5 h, while the content of silicon increased from 15.94 wt.% to 37.89 wt.%.

Investigating PID shunting in polycrystalline silicon modules via multiscale, multitechnique characterization

DOE PAGES

Harvey, Steven P.; Moseley, John; Norman, Andrew; ...

2018-02-27

We investigated the potential-induced degradation (PID) shunting mechanism in multicrystalline-silicon photovoltaic modules by using a multiscale, multitechnique characterization approach. Both field-stressed modules and laboratory-stressed mini modules were studied. We used photoluminescence, electroluminescence, and dark lock-in thermography imaging to identify degraded areas at the module scale. Small samples were then removed from degraded areas, laser marked, and imaged by scanning electron microscopy. We used simultaneous electron-beam induced current imaging and focused ion beam milling to mark around PID shunts for chemical analysis by time-of-flight secondary-ion mass spectrometry or to isolate individual shunt defects for transmission electron microscopy and atom-probe tomography analysis.more » By spanning a range of 10 orders of magnitude in size, this approach enabled us to investigate the root-cause mechanisms for PID shunting. We observed a direct correlation between recombination active shunts and sodium content. The sodium content in shunted areas peaks at the SiNX/Si interface and is consistently observed at a concentration of 0.1% to 2% in shunted areas. Analysis of samples subjected to PID recovery, either activated by electron beam or thermal effects only, reveals that recovery of isolated shunts correlates with diffusion of sodium out of the structural defects to the silicon surface. We observed the role of oxygen and chlorine in PID shunting and found that those species - although sometimes present in structural defects where PID shunting was observed - do not play a consistent role in PID shunting.« less

Endoscopic dacryocystorhinostomy without silicone stent.

PubMed

Yeon, Je Yeob; Shim, Woo Sub

2012-06-01

In nasolacrimal duct (NLD) obstruction patients that undergo endoscopic dacryocystorhinostomy (DCR), creation of a patent rhinostomy with adequate epithelialization can be accomplished without a stent. However, in common canalicular obstruction patients, a silicone stent seems to have a beneficial role and to bear more favorable results. The aim of this study was to evaluate the surgical outcome of endoscopic DCR without the use of a silicone stent. In all, 36 patients (41 eyes) who underwent endoscopic DCR were enrolled in this study. The patients were classified into a DCR with silicone stent group and a DCR without silicone stent group. Then each of the groups was subdivided into common canalicular obstruction group and NLD obstruction group. Surgical outcomes were evaluated by postoperative symptom improvement and patency of the rhinostomy under nasal endoscopic exam. The epiphora was improved in 84.2% of the silicone stent group and 81.8% of the non-silicone stent group. Categorized by the level of obstruction, in common canalicular obstruction, the success rate was 84.5% (11/13) in the silicone stent group and 57.1% (4/7) in the no stent group. In NLD obstruction, the success rate was 83.0% (5/6) in the silicone stent group and 93.3% (14/15) in the no stent group.

p-type doping by platinum diffusion in low phosphorus doped silicon

NASA Astrophysics Data System (ADS)

Ventura, L.; Pichaud, B.; Vervisch, W.; Lanois, F.

2003-07-01

In this work we show that the cooling rate following a platinum diffusion strongly influences the electrical conductivity in weakly phosphorus doped silicon. Diffusions were performed at the temperature of 910 °C in the range of 8 32 hours in 0.6, 30, and 60 Ωrm cm phosphorus doped silicon samples. Spreading resistance profile analyses clearly show an n-type to p-type conversion under the surface when samples are cooled slowly. On the other hand, a compensation of the phosphorus donors can only be observed when samples are quenched. One Pt related acceptor deep level at 0.43 eV from the valence band is assumed to be at the origin of the type conversion mechanism. Its concentration increases by lowering the applied cooling rate. A complex formation with fast species such as interstitial Pt atoms or intrinsic point defects is expected. In 0.6 Ωrm cm phosphorus doped silicon, no acceptor deep level in the lower band gap is detected by DLTS measurement. This removes the opportunity of a pairing between phosphorus and platinum and suggests the possibility of a Fermi level controlled complex formation.

Regulation of Transforming Growth Factor β1, Platelet-Derived Growth Factor, and Basic Fibroblast Growth Factor by Silicone Gel Sheeting in Early-Stage Scarring.

PubMed

Choi, Jaehoon; Lee, Eun Hee; Park, Sang Woo; Chang, Hak

2015-01-01

Hypertrophic scars and keloids are associated with abnormal levels of growth factors. Silicone gel sheets are effective in treating and preventing hypertrophic scars and keloids. There has been no report on the change in growth factors in the scar tissue following the use of silicone gel sheeting for scar prevention. A prospective controlled trial was performed to evaluate whether growth factors are altered by the application of a silicone gel sheet on a fresh surgical scar. Four of seven enrolled patients completed the study. Transforming growth factor (TGF)-β1, platelet-derived growth factor (PDGF), and basic fibroblast growth factor (bFGF) were investigated immunohistochemically in biopsies taken from five scars at 4 months following surgery. In both the epidermis and the dermis, the expression of TGF-β1 (P=0.042 and P=0.042) and PDGF (P=0.043 and P=0.042) was significantly lower in the case of silicone gel sheet-treated scars than in the case of untreated scars. The expression of bFGF in the dermis was significantly higher in the case of silicone gel sheet-treated scars than in the case of untreated scars (P=0.042), but in the epidermis, the expression of bFGF showed no significant difference between the groups (P=0.655). The levels of TGF-β1, PDGF, and bFGF are altered by the silicone gel sheet treatment, which might be one of the mechanisms of action in scar prevention.

Abiotic Stress Response to As and As+Si, Composite Reprogramming of Fruit Metabolites in Tomato Cultivars

PubMed Central

Marmiroli, Marta; Mussi, Francesca; Imperiale, Davide; Lencioni, Giacomo; Marmiroli, Nelson

2017-01-01

The toxic element arsenic interacts with the beneficial element silicon at many levels of the plant metabolism. The ability of the tomato plant to take up and translocate As into its fruit has risen concerns that it could facilitate the entry of this element into the human food chain above the admitted level. Here, the fruit of two contrasting tomato cultivars, Aragon and Gladis, were evaluated following exposures of either 48 h or 14 days to As-contaminated irrigation water, with or without supplementary Si. The focus was on selected biochemical stress response indicators to dissect metabolic fruit reprogramming induced by As and Si. A multivariate statistical approach was utilized to establish the relationship between tissue As and Si concentrations and selected biochemical aspects of the stress response mechanisms to identify a set of relevant stress response descriptors. This resulted in the recognition of strong cultivar and temporal effects on metabolic and biochemical stress parameters following the treatments. In this paper the metabolic changes in H2O2 content, lipid peroxidation, lycopene and carotenoids content, ascorbate and GSH redox state, total phenolics, ABTS and DPPH radicals inhibition were in favor of an oxidative stress. The significance of some of these parameters as reliable arsenic exposition biomarkers is discussed in the context of the limited knowledge on the As-induced stress response mechanisms at the level of the ripening fruit which presents a distinctive molecular background dissimilar from roots and shoots. PMID:29312426

The role of nanostructured mesoporous silicon in discriminating in vitro calcification for electrospun composite tissue engineering scaffolds

NASA Astrophysics Data System (ADS)

Fan, Dongmei; Akkaraju, Giridhar R.; Couch, Ernest F.; CanhamCurrent Address, Intrinsiq Materials Ltd, Geraldine Road, Malvern Wr14 3SZ Uk, Leigh T.; Coffer, Jeffery L.

2011-02-01

The impact of mesoporous silicon (PSi) particles-embedded either on the surface, or totally encapsulated within electrospun poly (ε-caprolactone) (PCL) fibers-on its properties as a tissue engineering scaffold is assessed. Our findings suggest that the resorbable porous silicon component can sensitively accelerate the necessary calcification process in such composites. Calcium phosphate deposition on the scaffolds was measured via in vitro calcification assays both at acellular and cellular levels. Extensive attachment of fibroblasts, human adult mesenchymal stem cells, and mouse stromal cells to the scaffold were observed. Complementary cell differentiation assays and ultrastructural measurements were also carried out; the levels of alkaline phosphatase expression, a specific biomarker for mesenchymal stem cell differentiation, show that the scaffolds have the ability to mediate such processes, and that the location of the Si plays a key role in levels of expression.

Spectroscopic ellipsometry analysis of nanocrystalline silicon carbide obtained at low temperature

NASA Astrophysics Data System (ADS)

Kerdiles, S.; Madelon, R.; Rizk, R.

2001-12-01

Thin films of silicon carbide obtained by hydrogen-reactive magnetron sputtering with various substrate temperatures TS (100-600 °C) were analysed by transmission electron microscopy (TEM) and spectroscopic ellipsometry (SE). The TEM images show evidence of the growth of hydrogenated nanocrystalline silicon carbide (nc-SiC:H) deposited at TS as low as 300 °C, with an average grain size of 4-5 nm. The SE spectra were reproduced by using the Forouhi-Bloomer model and assuming a 7 nm thick overlayer with a void fraction of 45%. The observed increase of the refractive index with TS is assigned to the improvement of both crystallinity and compactness of the layer. The expected increase of the optical gap seems to be offset by the drop of hydrogen content, leaving the gap unchanged. The fabrication and characteristics of nc-SiC:H/c-Si diode are finally described and the data indicate a good rectifying behaviour, together with a low leakage current.

Periprosthetic bleeding 18 years post-silicone reconstruction of the orbital floor.

PubMed

Ilie, Vlad Ionut; Ilie, Victor George; Quarmby, Craig; Lefter, Mihaela

2011-10-01

Periprosthetic orbital haemorrhage is an uncommon complication of the alloplastic implants used in post-traumatic orbital floor repair. The small case series or individual reports provide no definite causative explanation for this delayed bleeding around silicone implants. It is likely that it is related to the disruption of fine capillaries within the pseudocapsule surrounding the implant, since the material does cause low-grade irritation with evidence of chronic inflammation. We report the case of a patient who developed a spontaneous periprosthetic bleeding 18 years' post-silicone sheet reconstruction of the orbital floor. Urgent removal of the implant insured prompt resolution of all symptoms and no further problem during the 2-year follow-up. This report emphasizes that periprosthetic orbital haemorrhage can occur years after the initial repair. Awareness of this rare complication allows for prompt diagnosis, decreasing the possibility of permanent damage of the orbital content. The removal of implant is necessary to relieve the symptoms and prevent potential infective complications.

Effect of light elements on the sound velocities in solid iron: Implications for the composition of Earth's core

NASA Astrophysics Data System (ADS)

Badro, James; Fiquet, Guillaume; Guyot, François; Gregoryanz, Eugene; Occelli, Florent; Antonangeli, Daniele; d'Astuto, Matteo

2007-02-01

We measured compressional sound velocities in light element alloys of iron (FeO, FeSi, FeS, and FeS2) at high-pressure by inelastic X-ray scattering. This dataset provides new mineralogical constraints on the composition of Earth's core, and completes the previous sets formed by the pressure-density systematics for these compounds. Based on the combination of these datasets and their comparison with radial seismic models, we propose an average composition model of the Earth's core. We show that the incorporation of small amounts of silicon or oxygen is compatible with geophysical observations and geochemical abundances. The effect of nickel on the calculated light element contents is shown to be negligible. The preferred core model derived from our measurements is an inner core which contains 2.3 wt.% silicon and traces of oxygen, and an outer core containing 2.8 wt.% silicon and around 5.3 wt.% oxygen.

Silicon Oxycarbide/Carbon Nanohybrids with Tiny Silicon Oxycarbide Particles Embedded in Free Carbon Matrix Based on Photoactive Dental Methacrylates.

PubMed

Wang, Meimei; Xia, Yonggao; Wang, Xiaoyan; Xiao, Ying; Liu, Rui; Wu, Qiang; Qiu, Bao; Metwalli, Ezzeldin; Xia, Senlin; Yao, Yuan; Chen, Guoxin; Liu, Yan; Liu, Zhaoping; Meng, Jian-Qiang; Yang, Zhaohui; Sun, Ling-Dong; Yan, Chun-Hua; Müller-Buschbaum, Peter; Pan, Jing; Cheng, Ya-Jun

2016-06-08

A new facile scalable method has been developed to synthesize silicon oxycarbide (SiOC)/carbon nanohybrids using difunctional dental methacrylate monomers as solvent and carbon source and the silane coupling agent as the precursor for SiOC. The content (from 100% to 40% by mass) and structure (ratio of disordered carbon over ordered carbon) of the free carbon matrix have been systematically tuned by varying the mass ratio of methacryloxypropyltrimethoxysilane (MPTMS) over the total mass of the resin monomers from 0.0 to 6.0. Compared to the bare carbon anode, the introduction of MPTMS significantly improves the electrochemical performance as a lithium-ion battery anode. The initial and cycled discharge/charge capacities of the SiOC/C nanohybrid anodes reach maximum with the MPTMS ratio of 0.50, which displays very good rate performance as well. Detailed structures and electrochemical performance as lithium-ion battery anodes have been systematically investigated. The structure-property correlation and corresponding mechanism have been discussed.

Superconductivity in Al-substituted Ba8Si46 clathrates

NASA Astrophysics Data System (ADS)

Li, Yang; Garcia, Jose; Chen, Ning; Liu, Lihua; Li, Feng; Wei, Yuping; Bi, Shanli; Cao, Guohui; Feng, Z. S.

2013-05-01

There is a great deal of interest vested in the superconductivity of Si clathrate compounds with sp3 network, in which the structure is dominated by strong covalent bonds among silicon atoms, rather than the metallic bonding that is more typical of traditional superconductors. A joint experimental and theoretical investigation of superconductivity in Al-substituted type-I silicon clathrates is reported. Samples of the general formula Ba8Si46-xAlx, with different values of x were prepared. With an increase in the Al composition, the superconducting transition temperature TC was observed to decrease systematically. The resistivity measurement revealed that Ba8Si42Al4 is superconductive with transition temperature at TC = 5.5 K. The magnetic measurements showed that the bulk superconducting Ba8Si42Al4 is a type II superconductor. For x = 6 sample Ba8Si40Al6, the superconducting transition was observed down to TC = 4.7 K which pointed to a strong suppression of superconductivity with increasing Al content as compared with TC = 8 K for Ba8Si46. Suppression of superconductivity can be attributed primarily to a decrease in the density of states at the Fermi level, caused by reduced integrity of the sp3 hybridized networks as well as the lowering of carrier concentration. These results corroborated by first-principles calculations showed that Al substitution results in a large decrease of the electronic density of states at the Fermi level, which also explains the decreased superconducting critical temperature within the BCS framework. The work provided a comprehensive understanding of the doping effect on superconductivity of clathrates.

A study of irradiation-induced defects in silicon using low temperature photoluminescence

NASA Technical Reports Server (NTRS)

Streetman, B. G.

1971-01-01

Irradiation-induced defects in silicon, using low temperature photoluminescence as a probe of defect properties were investigated. The goal of this research was to gain new understanding of defects which degrade solar cell characteristics in a radiation environment. In this regard, an important aspect of this program was a study of radiation damage and annealing in lithium doped silicon, which is useful in reducing solar cell degradation. Luminescence was used to study defects because this property reveals electron transitions through a number of defect energy levels at any given annealing stage; the luminescence spectra give excellent resolution of many defect energy levels, and these measurements can be used to give defect symmetry in the lattice, impurity dependence, and annealing properties.

Processing-Induced Electrically Active Defects in Black Silicon Nanowire Devices.

PubMed

Carapezzi, Stefania; Castaldini, Antonio; Mancarella, Fulvio; Poggi, Antonella; Cavallini, Anna

2016-04-27

Silicon nanowires (Si NWs) are widely investigated nowadays for implementation in advanced energy conversion and storage devices, as well as many other possible applications. Black silicon (BSi)-NWs are dry etched NWs that merge the advantages related to low-dimensionality with the special industrial appeal connected to deep reactive ion etching (RIE). In fact, RIE is a well established technique in microelectronics manufacturing. However, RIE processing could affect the electrical properties of BSi-NWs by introducing deep states into their forbidden gap. This work applies deep level transient spectroscopy (DLTS) to identify electrically active deep levels and the associated defects in dry etched Si NW arrays. Besides, the successful fitting of DLTS spectra of BSi-NWs-based Schottky barrier diodes is an experimental confirmation that the same theoretical framework of dynamic electronic behavior of deep levels applies in bulk as well as in low dimensional structures like NWs, when quantum confinement conditions do not occur. This has been validated for deep levels associated with simple pointlike defects as well as for deep levels associated with defects with richer structures, whose dynamic electronic behavior implies a more complex picture.

Surface Coating of Gypsum-Based Molds for Maxillofacial Prosthetic Silicone Elastomeric Material: The Surface Topography.

PubMed

Khalaf, Salah; Ariffin, Zaihan; Husein, Adam; Reza, Fazal

2015-07-01

This study aimed to compare the surface roughness of maxillofacial silicone elastomers fabricated in noncoated and coated gypsum materials. This study was also conducted to characterize the silicone elastomer specimens after surfaces were modified. A gypsum mold was coated with clear acrylic spray. The coated mold was then used to produce modified silicone experimental specimens (n = 35). The surface roughness of the modified silicone elastomers was compared with that of the control specimens, which were prepared by conventional flasking methods (n = 35). An atomic force microscope (AFM) was used for surface roughness measurement of silicone elastomer (unmodified and modified), and a scanning electron microscope (SEM) was used to evaluate the topographic conditions of coated and noncoated gypsum and silicone elastomer specimens (unmodified and modified) groups. After the gypsum molds were characterized, the fabricated silicone elastomers molded on noncoated and coated gypsum materials were evaluated further. Energy-dispersive X-ray spectroscopy (EDX) analysis of gypsum materials (noncoated and coated) and silicone elastomer specimens (unmodified and modified) was performed to evaluate the elemental changes after coating was conducted. Independent t test was used to analyze the differences in the surface roughness of unmodified and modified silicone at a significance level of p < 0.05. Roughness was significantly reduced in the silicone elastomers processed against coated gypsum materials (p < 0.001). The AFM and SEM analysis results showed evident differences in surface smoothness. EDX data further revealed the presence of the desired chemical components on the surface layer of unmodified and modified silicone elastomers. Silicone elastomers with lower surface roughness of maxillofacial prostheses can be obtained simply by coating a gypsum mold. © 2014 by the American College of Prosthodontists.

Progress in the Development of SERS-Active Substrates Based on Metal-Coated Porous Silicon

PubMed Central

Girel, Kseniya V.; Panarin, Andrei; Terekhov, Sergei N.

2018-01-01

The present work gives an overview of the developments in surface-enhanced Raman scattering (SERS) with metal-coated porous silicon used as an active substrate. We focused this review on the research referenced to SERS-active materials based on porous silicon, beginning from the patent application in 2002 and enclosing the studies of this year. Porous silicon and metal deposition technologies are discussed. Since the earliest studies, a number of fundamentally different plasmonic nanostructures including metallic dendrites, quasi-ordered arrays of metallic nanoparticles (NPs), and metallic nanovoids have been grown on porous silicon, defined by the morphology of this host material. SERS-active substrates based on porous silicon have been found to combine a high and well-reproducible signal level, storage stability, cost-effective technology and handy use. They make it possible to identify and study many compounds including biomolecules with a detection limit varying from milli- to femtomolar concentrations. The progress reviewed here demonstrates the great prospects for the extensive use of the metal-coated porous silicon for bioanalysis by SERS-spectroscopy. PMID:29883382

Progress in the Development of SERS-Active Substrates Based on Metal-Coated Porous Silicon.

PubMed

Bandarenka, Hanna V; Girel, Kseniya V; Zavatski, Sergey A; Panarin, Andrei; Terekhov, Sergei N

2018-05-21

The present work gives an overview of the developments in surface-enhanced Raman scattering (SERS) with metal-coated porous silicon used as an active substrate. We focused this review on the research referenced to SERS-active materials based on porous silicon, beginning from the patent application in 2002 and enclosing the studies of this year. Porous silicon and metal deposition technologies are discussed. Since the earliest studies, a number of fundamentally different plasmonic nanostructures including metallic dendrites, quasi-ordered arrays of metallic nanoparticles (NPs), and metallic nanovoids have been grown on porous silicon, defined by the morphology of this host material. SERS-active substrates based on porous silicon have been found to combine a high and well-reproducible signal level, storage stability, cost-effective technology and handy use. They make it possible to identify and study many compounds including biomolecules with a detection limit varying from milli- to femtomolar concentrations. The progress reviewed here demonstrates the great prospects for the extensive use of the metal-coated porous silicon for bioanalysis by SERS-spectroscopy.

Silicon Alignment Pins: An Easy Way to Realize a Wafer-to-Wafer Alignment

NASA Technical Reports Server (NTRS)

Jung-Kubiak, Cecile; Reck, Theodore J.; Lin, Robert H.; Peralta, Alejandro; Gill, John J.; Lee, Choonsup; Siles, Jose; Toda, Risaku; Chattopadhyay, Goutam; Cooper, Ken B.;

Methods To Determine the Silicone Oil Layer Thickness in Sprayed-On Siliconized Syringes.

PubMed

Loosli, Viviane; Germershaus, Oliver; Steinberg, Henrik; Dreher, Sascha; Grauschopf, Ulla; Funke, Stefanie

2018-01-01

The silicone lubricant layer in prefilled syringes has been investigated with regards to siliconization process performance, prefilled syringe functionality, and drug product attributes, such as subvisible particle levels, in several studies in the past. However, adequate methods to characterize the silicone oil layer thickness and distribution are limited, and systematic evaluation is missing. In this study, white light interferometry was evaluated to close this gap in method understanding. White light interferometry demonstrated a good accuracy of 93-99% for MgF 2 coated, curved standards covering a thickness range of 115-473 nm. Thickness measurements for sprayed-on siliconized prefilled syringes with different representative silicone oil distribution patterns (homogeneous, pronounced siliconization at flange or needle side, respectively) showed high instrument (0.5%) and analyst precision (4.1%). Different white light interferometry instrument parameters (autofocus, protective shield, syringe barrel dimensions input, type of non-siliconized syringe used as base reference) had no significant impact on the measured average layer thickness. The obtained values from white light interferometry applying a fully developed method (12 radial lines, 50 mm measurement distance, 50 measurements points) were in agreement with orthogonal results from combined white and laser interferometry and 3D-laser scanning microscopy. The investigated syringe batches (lot A and B) exhibited comparable longitudinal silicone oil layer thicknesses ranging from 170-190 nm to 90-100 nm from flange to tip and homogeneously distributed silicone layers over the syringe barrel circumference (110- 135 nm). Empty break-loose (4-4.5 N) and gliding forces (2-2.5 N) were comparably low for both analyzed syringe lots. A silicone oil layer thickness of 100-200 nm was thus sufficient for adequate functionality in this particular study. Filling the syringe with a surrogate solution including short-term exposure and emptying did not significantly influence the silicone oil layer at the investigated silicone level. It thus appears reasonable to use this approach to characterize silicone oil layers in filled syringes over time. The developed method characterizes non-destructively the layer thickness and distribution of silicone oil in empty syringes and provides fast access to reliable results. The gained information can be further used to support optimization of siliconization processes and increase the understanding of syringe functionality. LAY ABSTRACT: Silicone oil layers as lubricant are required to ensure functionality of prefilled syringes. Methods evaluating these layers are limited, and systematic evaluation is missing. The aim of this study was to develop and assess white light interferometry as an analytical method to characterize sprayed-on silicone oil layers in 1 mL prefilled syringes. White light interferometry showed a good accuracy (93-99%) as well as instrument and analyst precision (0.5% and 4.1%, respectively). Different applied instrument parameters had no significant impact on the measured layer thickness. The obtained values from white light interferometry applying a fully developed method concurred with orthogonal results from 3D-laser scanning microscopy and combined white light and laser interferometry. The average layer thicknesses in two investigated syringe lots gradually decreased from 170-190 nm at the flange to 100-90 nm at the needle side. The silicone layers were homogeneously distributed over the syringe barrel circumference (110-135 nm) for both lots. Empty break-loose (4-4.5 N) and gliding forces (2-2.5 N) were comparably low for both analyzed syringe lots. Syringe filling with a surrogate solution, including short-term exposure and emptying, did not significantly affect the silicone oil layer. The developed, non-destructive method provided reliable results to characterize the silicone oil layer thickness and distribution in empty siliconized syringes. This information can be further used to support optimization of siliconization processes and increase understanding of syringe functionality. © PDA, Inc. 2018.

Preparation and Electrochemical Properties of Graphene/Epoxy Resin Composite Coating

NASA Astrophysics Data System (ADS)

Liao, Zijun; Zhang, Tianchi; Qiao, Sen; Zhang, Luyihang

2017-11-01

The multilayer graphene powder as filler, epoxy modified silicone resin as film-forming agent, anticorrosion composite coating has been created using sand dispersion method, the electrochemical performance was compared with different content of graphene composite coating and pure epoxy resin coating. The open circuit potential (OCP), potentiodynamic polarization curves (Tafel Plot) and electrochemical impedance spectroscopy (EIS) were tested. The test results showed that the anti-corrosion performance of multilayer graphene added has improved greatly, and the content of the 5% best corrosion performance of graphene composite coating.

Vacancy-oxygen defects in p-type Si1-xGex

NASA Astrophysics Data System (ADS)

Sgourou, E. N.; Londos, C. A.; Chroneos, A.

2014-10-01

Oxygen-vacancy defects and, in particular, the VO pairs (known as A-centers) are common defects in silicon (Si) with a deleterious impact upon its properties. Although oxygen-vacancy defects have been extensively studied in Si there is far less information about their properties in p-type doped silicon germanium (Si1-xGex). Here, we use Fourier transform infrared spectroscopy to determine the production and evolution of oxygen-vacancy defects in p-type Si1-xGex. It was determined that the increase of Ge content affects the production and the annealing behavior of the VO defect as well as its conversion to the VO2 defect. In particular, both the VO production and the VO annealing temperature are reduced with the increase of Ge. The conversion ratio [VO2]/[VO] also decreases with the increase of x, although the ratios [VO3]/[VO2] and [VO4]/[VO3] show a tendency to increase for larger Ge contents. The results are discussed in view of recent experimental and theoretical studies in Si and Si1-xGex.

Anisotropic thermal property of magnetically oriented carbon nanotube polymer composites

NASA Astrophysics Data System (ADS)

Li, Bin; Dong, Shuai; Wang, Caiping; Wang, Xiaojie; Fang, Jun

2016-04-01

This paper proposes a method for preparing multi-walled carbon nanotubea/polydimethylsiloxane (MWCNTs/PDMS) composites with enhanced thermal properties by using a high magnetic field (up to 10T). The MWCNT are oriented magnetically inside a silicone by in-situ polymerization method. The anisotropic structure would be expected to produce directional thermal conductivity. This study will provide a new approach to the development of anisotropic thermal-conductive polymer composites. Systematic studies with the preparation of silicone/graphene composites corresponding to their thermal and mechanical properties are carried out under various conditions: intensity of magnetic field, time, temperature, fillings. The effect of MWCNT/graphene content and preparation procedures on thermal conductivity of composites is investigated. Dynamic mechanical analysis (DMA) is used to reveal the mechanical properties of the composites in terms of the filling contents and magnetic field strength. The scanning electron microscope (SEM) is used to observe the micro-structure of the MWCNT composites. The alignment of MWCNTs in PDMS matrix is also studied by Raman spectroscopy. The thermal conductivity measurements show that the magnetically aligned CNT-composites feature high anisotropy in thermal conductivity.

Lectin-functionalized poly(glycidyl methacrylate)-block-poly(vinyldimethyl azlactone) surface supports for high avidity microbial capture

DOE Office of Scientific and Technical Information (OSTI.GOV)

Hansen, Ryan R; Hinestrosa Salazar, Juan P; Shubert, Katherine R

2013-01-01

Microbial exopolysaccharides (EPS) play a critical and dynamic role in shaping the interactions between microbial community members and their local environment. The capture of targeted microbes using surface immobilized lectins that recognize specific extracellular oligosaccharide moieties offers a non-destructive method for functional characterization based on EPS content. In this report, we evaluate the use of the block co-polymer, poly(glycidyl methacrylate)-block-4,4-dimethyl-2-vinylazlactone (PGMA-b-PVDMA), as a surface support for lectin-specific microbial capture. Arrays of circular polymer supports ten micron in diameter were generated on silicon substrates to provide discrete, covalent coupling sites for Triticum vulgare and Lens culinaris lectins. These supports promoted microbemore » adhesion and colony formation in a lectin-specific manner. Silicon posts with similar topography containing only physisorbed lectins showed significantly less activity. These results demonstrate that micropatterned PGMA-b-PVDMA supports provide a unique platform for microbial capture and screening based on EPS content by combining high avidity lectin surfaces with three-dimensional topography.« less

Quantitative and qualitative studies of silica in different rice samples grown in north of Iran using UV-vis, XRD and IR spectroscopy techniques.

PubMed

Samadi-Maybodi, Abdolraouf; Atashbozorg, Ebrahim

2006-11-15

Silicon is an essential trace element and is found in vegetables, fruits, cereals, water, pasta and rice (Oryza sativa). In this work, the silica content of different types of rice grains were measured. Here, we used the heteropoly blue photometric method with a double beam UV-vis spectrophotometer to determine the amount of silicon in rice samples (n=7) that were collected in the north of Iran. The samples were digested with wet-ashing method by microwave-assisted heating and then treated with ammonium molybdate to produce a yellow color compound in acidic solution (ca. pH 1.2) and then reduced to give a heteropoly compound with a blue color. Analyses were performed using standard addition method and absorbance values were measured with double beam UV-vis spectrophotometer at lambda(max)=815nm. Results indicated that the silica content was 307-451mg/kg for the samples. X-ray diffraction patterns and infra-red spectra were obtained from rice samples without any sample treatment.

"Silicone related symptoms" are common in patients with fibromyalgia: no evidence for a new disease.

PubMed

Wolfe, F

1999-05-01

To ascertain if the symptom content and rate of symptoms in patients with fibromyalgia (FM) are similar to those in what has been called silicone implant associated syndrome (SIAS), and to determine if SIAS is indeed a new disease or whether it is largely recognizable as FM. Mailed survey to 901 patients in Wichita, KS, Portland, OR, Los Angeles, CA, Peoria, IL, Boston, MA, San Antonio, TX, and eastern Kansas who were participating in a longterm outcome study of FM. Laboratory data were available from Wichita patients. Content of symptoms was similar to that in SIAS, and rates were generally as high or higher in patients with FM than in SIAS. In patients with FM, 37.2% had all of the following 5 items: arthralgias, myalgias, sicca complex, atypical rash, and symptoms of a peripheral neuropathy; and 55.2% had 4 of the 5 items. These data do not suggest that SIAS is an unrecognized new disease, but suggest the opposite, that such symptoms are well known and previously recognized, and are common among those with musculoskeletal complaints and those seen in rheumatology clinics.

Mid-IR soliton compression in silicon optical fibers and fiber tapers.

PubMed

Peacock, Anna C

2012-03-01

Numerical simulations are used to investigate soliton compression in silicon core optical fibers at 2.3 μm in the mid-infrared waveguide regime. Compression in both standard silicon fibers and fiber tapers is compared to establish the relative compression ratios for a range of input pulse conditions. The results show that tapered fibers can be used to obtain higher levels of compression for moderate soliton orders and thus lower input powers. © 2012 Optical Society of America

Analysis of the Effects of Impurities in Silicon. [to determine solar cell efficiency

NASA Technical Reports Server (NTRS)

Wohlgemuth, J. H.; Lafky, W. M.; Burkholder, J. H.

1979-01-01

A solar cell fabrication and analysis program to determine the effects on the resultant solar cell efficiency of impurities incorporated into silicon is conducted. Flight quality technologies and quality assurance are employed to assure that variations in cell performance are due to the impurities incorporated in the silicon. The type and level of impurity doping in each test lot is given and the mechanism responsible for the degradation of cell performance is identified and correlated to the doped impurities.

The effect of diffusion induced lattice stress on the open-circuit voltage in silicon solar cells

NASA Technical Reports Server (NTRS)

Weizer, V. G.; Godlewski, M. P.

1984-01-01

It is demonstrated that diffusion induced stresses in low resistivity silicon solar cells can significantly reduce both the open-circuit voltage and collection efficiency. The degradation mechanism involves stress induced changes in both the minority carrier mobility and the diffusion length. Thermal recovery characteristics indicate that the stresses are relieved at higher temperatures by divacancy flow (silicon self diffusion). The level of residual stress in as-fabricated cells was found to be negligible in the cells tested.

The effect of grain boundaries on the resistivity of polycrystalline silicon. Ph.D. Thesis - Va. Univ.

NASA Technical Reports Server (NTRS)

Fripp, A. L., Jr.

1974-01-01

The electrical resistivity of polycrystalline silicon films was investigated. The films were grown by the chemical vapor decomposition of silane on oxidized silicon wafers. The resistivity was found to be independent of dopant atom concentration in the lightly doped regions but was a strong function of dopant levels in the more heavily doped regions. A model, based on high dopant atom segregation in the grain boundaries, is proposed to explain the results.

Diffusivity of the double negatively charged mono-vacancy in silicon

NASA Astrophysics Data System (ADS)

Bhoodoo, Chidanand; Vines, Lasse; Monakhov, Edouard; Svensson, Bengt Gunnar

2017-05-01

Lightly-doped silicon (Si) samples of n-type conductivity have been irradiated with 2.0 MeV {{\\text{H}}+} ions at a temperature of 30 K and characterized in situ by deep level transient spectroscopy (DLTS) measurements using an on-line setup. Migration of the Si mono-vacancy in its double negative charge state (V 2-) starts to occur at temperatures above  ˜70 K and is monitored via trapping of V 2- by interstitial oxygen impurity atoms ({{\\text{O}}i} ), leading to the growth of the prominent vacancy-oxygen (V\\text{O} ) center. The V\\text{O} center gives rise to an acceptor level located at  ˜0.17 eV below the conduction band edge (E c ) and is readily detected by DLTS measurements. Post-irradiation isothermal anneals at temperatures in the range of 70 to 90 K reveal first-order kinetics for the reaction {{V}2-}+{{\\text{O}}i}\\to V\\text{O} ≤ft(+ 2{{e}-}\\right) in both Czochralski-grown and Float-zone samples subjected to low fluences of {{\\text{H}}+} ions, i.e. the irradiation-induced V concentration is dilute (≤slant 1013 cm-3). On the basis of these kinetics data and the content of {{\\text{O}}i} , the diffusivity of V 2- can be determined quantitatively and is found to exhibit an activation energy for migration of  ˜0.18 eV with a pre-exponential factor of  ˜4× {{10}-3} cm2 s-1. The latter value evidences a simple jump process without any entropy effects for the motion of V 2-. No deep level in the bandgap to be associated with V 2- is observed but the results suggest that the level is situated deeper than  ˜0.19 eV below E c , corroborating results reported previously in the literature.

[Effects of silicon supply on diurnal variations of physiological properties at rice heading stage under elevated UV-B radiation].

PubMed

Wu, Lei; Lou, Yun-sheng; Meng, Yan; Wang, Wei-qing; Cui, He-yang

2015-01-01

A pot experiment was conducted to investigate the effects of silicon (Si) supply on diurnal variations of photosynthesis and transpiration-related physiological parameters at rice heading stage under elevated UV-B radiation. The experiment was designed with two UV-B radiation levels, i.e. ambient UV-B. (ambient, A) and elevated UV-B (elevated by 20%, E), and four Si supply levels, i.e. Sio (control, 0 kg SiO2 . hm-2), Si, (sodium silicate, 100 kg SiO2 . hm-2), Si2 (sodium silicate, 200 kg SiO2 . hm2), Si3 (slag fertilizer, 200 kg SiO2 . hm-2). The results showed that, compared with ambient UV-B radiation, elevated UV-B radiation decreased the net photosynthesis rate (Pn) , intercellular CO2 concentration (Ci), transpiration rate (Tr), stomatal conductivity (gs) and water use efficiency (WUE) by 11.3%, 5.5%, 10.4%, 20.3% and 6.3%, respectively, in the treatment without Si supply (Si, level), and decreased the above parameters by 3.8%-5.5%, 0.7%-4.8%, 4.0%-8.7%, 7.4%-20.2% and 0.7%-5.9% in the treatments with Si supply (Si1, Si2 and Si3 levels) , respectively. Namely, elevated UV-B radiation decreased the photosynthesis and transpiration-related physiological parameters, but silicon supply could obviously mitigate the depressive effects of elevated UV-B radiation. Under elevated UV-B radiation, compared with control (Si0 level), silicon supply increased Pn, Ci, gs and WUE by 16.9%-28.0%, 3.5%-14.3%, 16.8% - 38.7% and 29.0% - 51.2%, respectively, but decreased Tr by 1.9% - 10.8% in the treatments with Si supply (Si1 , Si2 and Si3 levels). That is, silicon supply could mitigate the depressive effects of elevated UV-B radiation through significantly increasingnP., CigsgK and WUE, but decreasing T,. However, the difference existed in ameliorating the depressive effects of elevated UV-B radiation on diurnal variations of physiological parameters among the treatments of silicon supply, with the sequence of Si3>Si2>1i >Si0. This study suggested that fertilizing slag was helpful not only in recycling industrial wastes, but also in effectively mitigating the depressive effects of elevated UV-B radiation on photosynthesis and transpiration in rice production.

Stress and efficiency studies in EFG

NASA Technical Reports Server (NTRS)

Kalejs, J. P.

1984-01-01

Stress and efficiency studies in EFG were carried out for silicon sheet growth. Methods were developed to quantify influence of dislocation electrical activity on bulk lifetime. A new creep law formulation for silicon stress was developed. Bulk lifetime degradation due to increase in doping levels was also examined.

Silicon chemistry in interstellar clouds

NASA Technical Reports Server (NTRS)

Langer, William D.; Glassgold, A. E.

1990-01-01

A new model of interstellar silicon chemistry is presented that explains the lack of SiO detections in cold clouds and contains an exponential temperature dependence for the SiO abundance. A key aspect of the model is the sensitivity of SiO production by neutral silicon reactions to density and temperature, which arises from the dependence of the rate coefficients on the population of the excited fine-structure levels of the silicon atom. As part of the explanation of the lack of SiO detections at low temperatures and densities, the model also emphasizes the small efficiencies of the production routes and the correspondingly long times needed to reach equilibrium. Measurements of the abundance of SiO, in conjunction with theory, can provide information on the physical properties of interstellar clouds such as the abundance of oxygen bearing molecules and the depletion of interstellar silicon.

Four space application material coatings on the Long-Duration Exposure Facility (LDEF)

NASA Technical Reports Server (NTRS)

Scialdone, John J.; Clatterbuck, Carroll

1995-01-01

Four material coatings of different thicknesses were flown on the LDEF to determine their ability to perform in the harsh space environment. The coatings, located in the ram direction of the spacecraft, were exposed for 10 months to the low-Earth orbit (LEO) environments experienced by the LDEF at an orbit of 260 nautical miles. They consisted of indium oxide (In2O3), silicon oxide (SiO(x)), clear RTV silicone, and silicone with silicate-treated zinc oxide (ZnO). These coatings were flown to assess their behavior when exposed to atomic oxygen and to confirm their good radiative properties, stability, electrical conductivity, and resistance to UV exposure. The flown samples were checked and compared with the reference unflown samples using high-magnification optical inspection, ESCA analysis, weight changes, and dimensional changes. These comparisons indicated the following. The 1000 A SiO(x) coating eroded uniformly, with minor changes in its radiative properties. The 100 A In2O3 coating eroded completely down to the Kapton backing, with resultant losses of reflectance. The RTV-615 showed erosion, with carbon (C) content losses, while the Si remained constant, with a doubling of the oxygen (O) concentration. The RTV-615 silicone with K2SiO3-treated ZnO changed from flat to glossy white in appearance. It lost C, was etched, and increased its O content. The upper layers showed no remaining Zn or K. Losses of reflectance occurred within certain wavelength bands. It was not possible to evaluate the experimental oxygen reaction rate using the calculated atomic oxygen fluence of 2.6 x 10(exp 20) atoms/cm(exp 2) for the exposure of these coatings during the flight. The bakeout of the coatings was not carried out prior to the flight. Hence, the coating weight and dimensional losses included losses by outgassing products.

Fatigue life of high-speed ball bearings with silicon nitride balls

NASA Technical Reports Server (NTRS)

Parker, R. J.; Zaretsky, E. V.

1974-01-01

Hot-pressed silicon nitride was evaluated as a rolling-element bearing material. The five-ball fatigue tester was used to test 12.7-mm- diameter silicon nitride balls at maximum Hertz stresses ranging from 4.27 x 10 to the 9th power n/sq m to 6.21 x 10 to the 9th power n/sq m at a race temperature of 328K. The fatigue life of NC-132 hot-pressed silicon nitride was found to be equal to typical bearing steels and much greater than other ceramic or cermet materials at the same stress levels. A digital computer program was used to predict the fatigue life of 120-mm- bore angular-contact ball bearings containing either steel or silicon nitride balls. The analysis indicates that there is no improvement in the lives of bearings of the same geometry operating at DN values from 2 to 4 million where silicon nitride balls are used in place of steel balls.

Porous silicon based anode material formed using metal reduction

DOE Office of Scientific and Technical Information (OSTI.GOV)

Anguchamy, Yogesh Kumar; Masarapu, Charan; Deng, Haixia

A porous silicon based material comprising porous crystalline elemental silicon formed by reducing silicon dioxide with a reducing metal in a heating process followed by acid etching is used to construct negative electrode used in lithium ion batteries. Gradual temperature heating ramp(s) with optional temperature steps can be used to perform the heating process. The porous silicon formed has a high surface area from about 10 m.sup.2/g to about 200 m.sup.2/g and is substantially free of carbon. The negative electrode formed can have a discharge specific capacity of at least 1800 mAh/g at rate of C/3 discharged from 1.5V tomore » 0.005V against lithium with in some embodiments loading levels ranging from about 1.4 mg/cm.sup.2 to about 3.5 mg/cm.sup.2. In some embodiments, the porous silicon can be coated with a carbon coating or blended with carbon nanofibers or other conductive carbon material.« less

Effect of tulle on the mechanical properties of a maxillofacial silicone elastomer.

PubMed

Gunay, Yumushan; Kurtoglu, Cem; Atay, Arzu; Karayazgan, Banu; Gurbuz, Cihan Cem

2008-11-01

The purpose of this research was to investigate if physical properties could be improved by incorporating a tulle reinforcement material into a maxillofacial silicone elastomer. A-2186 silicone elastomer was used in this study. The study group consisted of 20 elastomer specimens incorporated with tulle and fabricated in dumbbell-shaped silicone patterns using ASTM D412 and D624 standards. The control group consisted of 20 elastomer specimens fabricated without tulle. Tensile strength, ultimate elongation, and tear strength of all specimens were measured and analyzed. Statistical analyses were performed using Mann-Whitney U test with a statistical significance at 95% confidence level. It was found that the tensile and tear strengths of tulle-incorporated maxillofacial silicone elastomer were higher than those without tulle incorporation (p < 0.05). Therefore, findings of this study suggested that tulle successfully reinforced a maxillofacial silicone elastomer by providing it with better mechanical properties and augmented strength--especially for the delicate edges of maxillofacial prostheses.

Continuous coating of silicon-on-ceramic

NASA Technical Reports Server (NTRS)

Heaps, J. D.; Schuldt, S. B.; Grung, B. L.; Zook, J. D.; Butter, C. D.

1980-01-01

Growth of sheet silicon on low-cost substrates has been demonstrated by the silicon coating with inverted meniscus (SCIM) technique. A mullite-based ceramic substrate is coated with carbon and then passed over a trough of molten silicon with a raised meniscus. Solidification occurs at the trailing edge of the downstream meniscus, producing a silicon-on-ceramic (SOC) layer. Meniscus shape and stability are controlled by varying the level of molten silicon in a reservoir connected to the trough. The thermal conditions for growth and the crystallographic texture of the SOC layers are similar to those produced by dip-coating, the original technique of meniscus-controlled growth. The thermal conditions for growth have been analyzed in some detail. The analysis correctly predicts the velocity-thickness relationship and the liquid-solid interface shape for dip-coating, and appears to be equally applicable to SCIM-coating. Solar cells made from dip-coated SOC material have demonstrated efficiencies of 10% on 4-sq cm cells and 9.9% on 10-sq cm cells.

Structure assignment, electronic properties, and magnetism quenching of endohedrally doped neutral silicon clusters, Si(n)Co (n = 10-12).

PubMed

Li, Yejun; Tam, Nguyen Minh; Claes, Pieterjan; Woodham, Alex P; Lyon, Jonathan T; Ngan, Vu Thi; Nguyen, Minh Tho; Lievens, Peter; Fielicke, André; Janssens, Ewald

2014-09-18

The structures of neutral cobalt-doped silicon clusters have been assigned by a combined experimental and theoretical study. Size-selective infrared spectra of neutral Si(n)Co (n = 10-12) clusters are measured using a tunable IR-UV two-color ionization scheme. The experimental infrared spectra are compared with calculated spectra of low-energy structures predicted at the B3P86 level of theory. It is shown that the Si(n)Co (n = 10-12) clusters have endohedral caged structures, where the silicon frameworks prefer double-layered structures encapsulating the Co atom. Electronic structure analysis indicates that the clusters are stabilized by an ionic interaction between the Co dopant atom and the silicon cage due to the charge transfer from the silicon valence sp orbitals to the cobalt 3d orbitals. Strong hybridization between the Co dopant atom and the silicon host quenches the local magnetic moment on the encapsulated Co atom.

Quenched-in defects in flashlamp-annealed silicon

NASA Technical Reports Server (NTRS)

Borenstein, J. T.; Jones, J. T.; Corbett, J. W.; Oehrlein, G. S.; Kleinhenz, R. L.

1986-01-01

Deep levels introduced in boron-doped silicon by heat-pulse annealing with a tungsten-halogen flashlamp are investigated using deep-level transient spectroscopy. Two majority-carrier trapping levels in the band gap, at Ev + 0.32 eV and at Ev + 0.45 eV, are observed. These results are compared to those obtained by furnace-quenching and laser-annealing studies. Both the position in the gap and the annealing kinetics of the hole trap at Ev + 0.45 eV suggest that this center is due to an interstitial iron impurity in the lattice. The deep levels are not consistently observed in all flashlamp-annealed Si crystals utilized.

Use of a novel extended blink test to evaluate the performance of two polyvinylpyrrolidone-containing, silicone hydrogel contact lenses

PubMed Central

Schafer, Jeffery; Reindel, William; Steffen, Robert; Mosehauer, Gary; Chinn, Joseph

2018-01-01

Background Sustained digital display viewing reduces eye blink frequency and tear film stability. To retain water and preserve a smooth optical surface, contact lens manufacturers have integrated the humectant polyvinylpyrrolidone (PVP) into silicone hydrogel contact lenses. In this study, extended blink time (EBT) was used to assess visual stability over a prolonged blink interval of two PVP-containing silicone hydrogel lenses, samfilcon A (SAM) and senofilcon A (SEN). Materials and methods This randomized, bilateral, masked, crossover study assessed lens performance in ten subjects after 16 hours of wear. EBT, ie, the time elapsed between cessation of blinking and blur-out of a threshold letter on the acuity chart, was measured. At the end of the wear period, subjects reported duration of computer use and rated visual quality (VQ) and comfort while wearing the assigned lens, and the investigator evaluated lens surface wetting characteristics. Each lens was removed and immediately weighed to determine total water content. Results EBTs were 10.42 seconds for SAM and 8.04 seconds for SEN (p = 0.015). Subjective ratings of VQ after 16 hours of wear were 84.6 for SAM and 74.4 for SEN (p = 0.049). Comfort ratings were 85.9 for SAM and 80.2 for SEN (p > 0.05). Median times of computer use were 6–8 hours for both lens types. Post blink, 70.0% of SAM and 30.0% of SEN lenses were completely wet (p = 0.021). Total water content after wear was 43.7% for SAM and 35.5% for SEN (p < 0.001). Conclusion EBT measurement indicated more stable vision with the PVP-containing SAM polymer compared with the PVP-containing SEN polymer. The SAM polymer also demonstrated better surface wetting and maintained higher water content after a prolonged period of wear. EBT can be valuable in assessing vision stability of patients after hours of computer use. PMID:29765195

Radiation tolerance of boron doped dendritic web silicon solar cells

NASA Technical Reports Server (NTRS)

Rohatgi, A.

1980-01-01

The potential of dendritic web silicon for giving radiation hard solar cells is compared with the float zone silicon material. Solar cells with n(+)-p-P(+) structure and approximately 15% (AMl) efficiency were subjected to 1 MeV electron irradiation. Radiation tolerance of web cell efficiency was found to be at least as good as that of the float zone silicon cell. A study of the annealing behavior of radiation-induced defects via deep level transient spectroscopy revealed that E sub v + 0.31 eV defect, attributed to boron-oxygen-vacancy complex, is responsible for the reverse annealing of the irradiated cells in the temperature range of 150 to 350 C.

Mn-silicide nanostructures aligned on massively parallel silicon nano-ribbons

NASA Astrophysics Data System (ADS)

De Padova, Paola; Ottaviani, Carlo; Ronci, Fabio; Colonna, Stefano; Olivieri, Bruno; Quaresima, Claudio; Cricenti, Antonio; Dávila, Maria E.; Hennies, Franz; Pietzsch, Annette; Shariati, Nina; Le Lay, Guy

2013-01-01

The growth of Mn nanostructures on a 1D grating of silicon nano-ribbons is investigated at atomic scale by means of scanning tunneling microscopy, low energy electron diffraction and core level photoelectron spectroscopy. The grating of silicon nano-ribbons represents an atomic scale template that can be used in a surface-driven route to control the combination of Si with Mn in the development of novel materials for spintronics devices. The Mn atoms show a preferential adsorption site on silicon atoms, forming one-dimensional nanostructures. They are parallel oriented with respect to the surface Si array, which probably predetermines the diffusion pathways of the Mn atoms during the process of nanostructure formation.

Method for making defect-free zone by laser-annealing of doped silicon

DOEpatents

Narayan, Jagdish; White, Clark W.; Young, Rosa T.

1980-01-01

This invention is a method for improving the electrical properties of silicon semiconductor material. The method comprises irradiating a selected surface layer of the semiconductor material with high-power laser pulses characterized by a special combination of wavelength, energy level, and duration. The combination effects melting of the layer without degrading electrical properties, such as minority-carrier diffusion length. The method is applicable to improving the electrical properties of n- and p-type silicon which is to be doped to form an electrical junction therein. Another important application of the method is the virtually complete removal of doping-induced defects from ion-implanted or diffusion-doped silicon substrates.

Mn-silicide nanostructures aligned on massively parallel silicon nano-ribbons.

PubMed

De Padova, Paola; Ottaviani, Carlo; Ronci, Fabio; Colonna, Stefano; Olivieri, Bruno; Quaresima, Claudio; Cricenti, Antonio; Dávila, Maria E; Hennies, Franz; Pietzsch, Annette; Shariati, Nina; Le Lay, Guy

2013-01-09

The growth of Mn nanostructures on a 1D grating of silicon nano-ribbons is investigated at atomic scale by means of scanning tunneling microscopy, low energy electron diffraction and core level photoelectron spectroscopy. The grating of silicon nano-ribbons represents an atomic scale template that can be used in a surface-driven route to control the combination of Si with Mn in the development of novel materials for spintronics devices. The Mn atoms show a preferential adsorption site on silicon atoms, forming one-dimensional nanostructures. They are parallel oriented with respect to the surface Si array, which probably predetermines the diffusion pathways of the Mn atoms during the process of nanostructure formation.

Optimization of metallic microheaters for high-speed reconfigurable silicon photonics.

PubMed

Atabaki, A H; Shah Hosseini, E; Eftekhar, A A; Yegnanarayanan, S; Adibi, A

2010-08-16

The strong thermooptic effect in silicon enables low-power and low-loss reconfiguration of large-scale silicon photonics. Thermal reconfiguration through the integration of metallic microheaters has been one of the more widely used reconfiguration techniques in silicon photonics. In this paper, structural and material optimizations are carried out through heat transport modeling to improve the reconfiguration speed of such devices, and the results are experimentally verified. Around 4 micros reconfiguration time are shown for the optimized structures. Moreover, sub-microsecond reconfiguration time is experimentally demonstrated through the pulsed excitation of the microheaters. The limitation of this pulsed excitation scheme is also discussed through an accurate system-level model developed for the microheater response.

Role of oxygen on microstructure and thermoelectric properties of silicon nanocomposites

NASA Astrophysics Data System (ADS)

Schierning, G.; Theissmann, R.; Stein, N.; Petermann, N.; Becker, A.; Engenhorst, M.; Kessler, V.; Geller, M.; Beckel, A.; Wiggers, H.; Schmechel, R.

2011-12-01

Phosphorus-doped silicon nanopowder from a gas phase process was compacted by DC-current sintering in order to obtain thermoelectrically active, nanocrystalline bulk silicon. A density between 95% and 96% compared to the density of single crystalline silicon was achieved, while preserving the nanocrystalline character with an average crystallite size of best 25 nm. As a native surface oxidation of the nanopowder usually occurs during nanopowder handling, a focus of this work is on the role of oxygen on microstructure and transport properties of the nanocomposite. A characterization with transmission electron microscopy (TEM) showed that the original core/shell structure of the nanoparticles was not found within the sintered nanocomposites. Two different types of oxide precipitates could be identified by energy filtered imaging technique. For a detailed analysis, 3-dimensional tomography with reconstruction was done using a needle-shaped sample prepared by focused ion beam (FIB). The 3-dimensional distribution of silicon dioxide precipitates confirmed that the initial core/shell structure breaks down and precipitates are formed. It is further found that residual pores are exclusively located within oxide precipitates. Thermoelectric characterization was done on silicon nanocomposites sintered between 960 °C and 1060 °C with varying oxygen content between room temperature and 950 °C. The higher sintering temperature led to a better electrical activation of the phosphorus dopant. The oxidic precipitates support densification and seem to be able to reduce the thermal conductivity therefore enhancing thermoelectric properties. A peak figure of merit, zT, of 0.5 at 950 °C was measured for a sample sintered at 1060 °C with a mean crystallite size of 46 nm.

Nature of diffraction fringes originating in the core of core-shell nanoparticle Cu/SiO2 and formation mechanism of the structures

NASA Astrophysics Data System (ADS)

Radnaev, A. R.; Kalashnikov, S. V.; Nomoev, A. V.

2016-05-01

This article is devoted to the analysis of the reasons for the occurrence of diffraction fringes in the cores of the core-shell nanoparticles Cu/SiO2. Moiré and diffraction fringes are observed while studying the nanoparticle cores under a transmission electron microscope. The formation of diffraction fringes is closely connected to the mechanism of nanoparticle formation under study and appears to be its consequence, letting us develop a hypothesis of metastable phase formation in nanoparticle cores. In our opinion, the emergence of diffraction fringes in cores of copper is connected to clasterisation in solid solution oversaturated with silicon α-Cu with the diffused interphase state. Only copper and oxygen (oxygen is presented as oxides in such types of copper as M0 - up to 0.01%; and M1 - up to 0.03%), Copper and silicon with oxygen in a stoichiometric proportion that is only sufficient for silicon dioxide formation (SiO2), Copper and silicon with oxygen in an amount that is sufficient not only for silicon dioxide formation, but also for the dissolution of silicon in the α-Cu solid solution, The amount of silicon in the alloy is not sufficient for the total fixation of oxygen contained in copper, Copper, oxygen and silicon whose contamination is greater than 8 wt.%. In the first case, the top-cut of oxygen in α-Cu solid solution is 0.03% at the temperature of 1066 °C. At slow cooling, secondary recrystallisation leads to the formation of equilibrium Cu2O on the line of the ultimate solubility (Figure 1a - line of maximum solubility of oxygen in copper). In the case of fast cooling fixation of oversaturated, single-phase, non-equilibrium α-Cu, solid solution (heat-treated) takes place, which contains saluted oxygen in an interstice crystal lattice of copper.Room temperature for nonferrous alloys (metals) is sufficient for the diffusive mobility of atoms, but insufficient for the formation of an equilibrium phase and stable phase of Cu2O. This is why diffusion of oxygen atoms in certain areas (clusters) with their increased diffusion of oxygen atoms in certain areas (clusters) with their increased number has been suggested [4]. At the same time, there is a boundary between the stable phase of α-Cu and 'pre-precipitations' containing oxygen, but not having the full value oxide: red copper ore, Cu2O (Figure 1b - solvus of suggested metastable phase). In this case, diffraction fringes can be treated as 'pre-precipitations' in the form of Guinier-Preston zones with diffuse interfaces and a stable α-Cu phase.In the second case, all oxygen and silicon after condensation and crystallisation are fixed in the form of amorphous SiO2 on the core surface of copper. As far as there are no atoms of saluted oxygen or silicon in copper, there are no conditions for the formation of non-equilibrium structures. Consequently, the diffraction pattern of nanoparticle cores is not observed (Figure 2a).In the third case, in the presence of quite a large amount of silicon in the stoichiometric drop, the process of copper oxide formation is not possible, because all the oxygen is used for the production of silicon dioxide since the sensitivity of oxygen to silicon is higher than to copper. This can be explained by the difference in Gibbs energy for the oxidising reaction of components. At the temperature of 25 °C it is 29.0 J/(g mol) - for copper, and 80.8 J/(g mol) for silicon. Silicon dioxide occurring due to the oxygen content in copper will be displaced on the surface of the drop in the form of ash, forming the SiO2 shell [24]. The reason lies in the lower specific density of silicon (approximately 2.2 g/cm3) compared to copper (8.92 g/cm3). This is why, in our case, it is appropriate to study the system where there is no influence of oxygen on the crystallisation of the Cu-Si system [5]. In the cores of such nanoparticles, prominent diffraction fringes can be observed in the α-Cu core (Figure 3b).Analysis of the Cu-Si phase diagram (Figure 3) shows that the maximum solubility of silicon α-Cu at the temperature 552 °C comprises 4.65 wt.% Si. This part of the Cu-Si phase diagram containing up to 8 wt.% silicon represents a classical example of the well-studied phase diagram of Al-Cu components, with the formation of Guinier-Preston zones in the quenched aluminium alloy [25].Single-phase solid solution of silicon α-Cu is fixed at fast cooling in our case. During its formation, cooling and natural ageing of the nanoparticle core, and redistribution of silicon into certain areas, takes place, forming metastable clusters in the matrix with high silicon content. They seem to be 'pre-precipitations' of the γ-phase of copper, though they really are not. In our opinion, diffraction fringes observed in these particles appear to be metastable phases according to Guinier-Preston zone type, i.e. α-Cu area with excessive silicon content.For nonferrous alloys, room temperature is sufficient for diffusive mobility of atoms of the saluted component [19]. Clusters are formed both at the time of cooling and in the long-term process (i.e. natural ageing). Provided that it is not a new phase, but rather the area of the initial matrix α-Cu solid solution enriched with dissolved silicon, such areas may be treated as Guinier-Preston zones. In contrast to intermediate phases with qualitatively new structures, characterised by their own lattices, Guinier-Preston zones have the same lattice as the matrix solution, but are deformed because of the difference in the atomic diameters of the solute and solvent. There is no clear boundary between the zone and solid solution by which it is surrounded. Compared to concentration fluctuations that appear continuously and are diffused by thermal motion, Guinier-Preston zones are stable for a long time (at low temperatures, for an intermediate amount of time). Experiments have shown that, with the increase of ageing duration, zone sizes are also increased. Furthermore, larger zones grow due to dissolution of the smaller ones, i.e. the same way as in coagulation of crystal grains in the solid state (i.e. collective crystallisation) [19]. The number of the zones at the given ageing temperature does not depend on the alloy composition.In some alloys, Guinier-Preston zones appear immediately after heat treatment or even during the cooling after heat treatment. At the same time, intermediate phases and stable phases appear after the incubation interval. All these facts show that Guinier-Preston zones are different to intermediate and stable phases. This is why Guinier-Preston zones are often called 'pre-precipitations' to differentiate them from real precipitations of intermediate and stable phases with a qualitatively new structure [19].Unlike such a structured approach that treats Guinier-Preston zones as 'pre-precipitations' from a thermodynamic point of view, they can be treated as independent stable phases, intermediate between the matrix solution and the stable phase. Consequently, these zones can be treated as the second phase that is in metastable equilibrium with the matrix solution.Moreover, a Guinier-Preston zone in the dual Cu-Si system with limited solubility of silicon in solid state can have its own line limit of solubility km (Figure 3). Metastable phases with a high content of silicon in the α-Cu matrix crystalline lattice appear below this line.Provided that the Guinier-Preston zone is treated as a phase, at the moment of its origin, the change of the free energy of the alloy is as follows: ΔU = -ΔUtot + ΔUsurf + ΔUel (Utot - total energy of the system, Usurf - surface energy of the crystal, Uel - elastic energy component). Because of the coherence property of the zone and the matrix, the ΔUsurf component can be neglected as its value is very small. Then, at relatively high oversaturation, the energy barrier for the origin of the Guinier-Preston zone should be relatively small, which explains the occurrence of clusters immediately after heat treatment or even at the moment of cooling and following natural ageing.The fact that Guinier-Preston zones can easily appear throughout the whole volume of the matrix solid solution and give the structure of equable decay with high density is of high practical value for us (Figure 2b).Thus, diffraction fringes in copper cores of core-shell nanoparticles should be treated as the second metastable phase, which is in equilibrium with the matrix solid solution. Similar to the exfoliation curve km in the solid solution α-Cu, the solvus curve for γ-Cu with intermediate 'pre-precipitations' can be built. The structure of the boundary with the matrix differentiates Guinier-Preston zones from other intermediate phases. These zones are fully coherent extractions, which is why their boundary with the matrix is poorly defined.As the rate accuracy of basal spacing with the method of electronic diffraction does not exceed 1 Å, according to the data it is not possible to evaluate accurately the change dα-Cu in diffraction fringes of the nanoparticle core; phase nonuniformity of structures has been suggested [26]. This is why it is necessary to treat such structures as solid solutions of α-Cu matrix, with the presence of metastable phases with the deformed crystal lattice.In the fourth case, formation of core-shell nanoparticle Cu/SiO2 happens much like in the third case, but due to the fact the amount of silicon is insufficient for the total fixation of oxygen and copper, a transition zone containing Cu2O is formed. Moiré in such particles are observed at the possible placing of double diffraction from two or more crystals of solid solution α-Cu (Figure 4a) [3]. The nanoparticle according to SAED analysis is very much like a 'sandwich': core α-Cu (Figure 4b, basal spacing d(111) ≈ 2.0 Å, corresponding to the tabular data for Cu), transition zone - copper oxide Cu2O (Figure 5a, basal spacing d(111) ≈ 2.4 Å) and shell - amorphous silicon dioxide, according to the EDAX data, the content of oxygen in this area is greater than 12% [11]. High copper oxide (CuO) was discovered only on the surface of the nanoparticle shell SiO2 (Figure 5b, basal spacing d(111) ≈ 2.5 Å).In the fifth case, when the silicon content is from 8.3-8.5 wt.% to 13 wt.%, copper with silicon in solid state at room temperature forms a continuous series of solid solutions of copper α, γ, ɛ and η. Silicon containing more than 13 wt.% copper undergoes eutectic decomposition only at (η″ + Si) [5]; structurally, such a solution contains eutectics in eutectics. In the obtained powder of nanoparticles, there are no modifications of solid solutions of copper, except for α-Cu.

Role of water in the tribochemical removal of bare silicon

NASA Astrophysics Data System (ADS)

Chen, Cheng; Xiao, Chen; Wang, Xiaodong; Zhang, Peng; Chen, Lei; Qi, Yaqiong; Qian, Linmao

2016-12-01

Nanowear tests of bare silicon against a SiO2 microsphere were conducted in air (relative humidity [RH] = 0%-89%) and water using an atomic force microscope. Experimental results revealed that the water played an important role in the tribochemical wear of the bare silicon. A hillock-like wear trace with a height of 0.7 nm was generated on the bare silicon surface in dry air. As the RH increased, the wear depth increased and reached the maximum level in water. Analysis of frictional dissipated energy suggested that the wear of the bare silicon was not dominated by mechanical interactions. High-resolution transmission electron microscopy detection demonstrated that the silicon atoms and crystal lattice underneath the worn area maintained integral perfectly and thus further confirmed the tribochemical wear mechanism of the bare silicon. Finally, the role of water in the tribochemical wear of the bare silicon may be explained by the following three aspects: the hydroxylation by hydroxyl ions auto-ionized in water, the hydrolytic reaction of water molecules, and the dissolution of the tribochemical product SiOmHn in liquid water. With increasing RH, a greater water amount would adsorb to the Si/SiO2 interface and induce a more serious tribochemical wear on the bare silicon surface. The results of this paper may provide further insight into the tribochemical removal mechanism of bare monocrystalline silicon and furnish the wider reaction cognition for chemical mechanical polishing.

A scanning proton microprobe study of stinging emergences from the leaf of the common stinging nettle urtica dioica l.

NASA Astrophysics Data System (ADS)

Hughes, N. P.; Perry, C. C.; Williams, R. J. P.; Watt, F.; Grime, G. W.

1988-03-01

Proton-induced X-ray emission (PIXE) combined with the Oxford scanning proton microprobe (SPM) was used to investigate the abundance and spatial distribution of inorganic elements in mineralising stinging emergences from the leaf of the Common Stinging Nettle, Urtica dioica L. Elemental maps and point analytical data were collected for emergences at two stages of maturity. In all emergences calcium and silicon were spatially organised and present at high concentration. The inorganic elements K, P, S and Mn were also spatially organised during mineralisation, but at maturity these elements were present only at background levels and then showed no specific localisation. The observed changes in the inorganic content of the emergences are obviously related to the mineralisation processes. The possible biochemical significance of the distribution of the elements is discussed.

Effects of silicon application on diurnal variations of physiological properties of rice leaves of plants at the heading stage under elevated UV-B radiation

NASA Astrophysics Data System (ADS)

Lou, Yun-sheng; Wu, Lei; Lixuan, Ren; Meng, Yan; Shidi, Zhao; Huaiwei, Zhu; Yiwei, Zhang

2016-02-01

We investigated the effects of silicon (Si) application on diurnal variations of photosynthetic and transpiration physiological parameters in potted rice ( Oryza sativa L. cv Nanjing 45) at the heading stage. The plants were subjected to two UV-B radiation levels, i.e., reference UV-B (A, ambient, 12.0 kJ m-2 day-1) and elevated UV-B radiation (E, a 20 % higher dose of UV-B than the reference, 14.4 kJ m-2 day-1), and four Si application levels, i.e., Si0 (no silicon supplementation, 0 kg SiO2 ha-1), Si1 (sodium silicate, 100 kg SiO2 ha-1), Si2 (sodium silicate, 200 kg SiO2 ha-1), and Si3 (slag silicon fertilizer, 200 kg SiO2 ha-1). Compared with the reference, elevated UV-B radiation decreased the diurnal mean values of the net photosynthetic rate ( Pn), intercellular carbon dioxide (CO2) concentration ( Ci), transpiration rate ( Tr), stomatal conductivity ( Gs), and water use efficiency (WUE) by 11.3, 5.5, 10.4, 20.3, and 6.3 %, respectively, in plants not supplemented with silicon (Si0), and decreased the above parameters by 3.8-5.5, 0.7-4.8, 4.0-8.7, 7.4-20.2, and 0.7-5.9 %, respectively, in plants treated with silicon (Si1, Si2, and Si3), indicating that silicon application mitigates the negative effects of elevated UV-B radiation. Under elevated UV-B radiation, silicon application (Si1, Si2, and Si3) increased the diurnal mean values of Pn, Ci, Gs, and WUE by 16.9-28.0, 3.5-14.3, 16.8-38.7, and 29.0-51.2 %, respectively, but decreased Tr by 1.9-10.8 %, compared with plants not treated with silicon (E+Si0), indicating that silicon application mitigates the negative effects of elevated UV-B radiation by significantly increasing the P n, C i, G s, and WUE and decreasing the T r of rice. Evident differences existed in mitigating the depressive effects of elevated UV-B radiation on diurnal variations of physiological parameters among different silicon application treatments, exhibiting as Si3>Si2>Si1>Si0. In addition to recycling steel industrial wastes, the application of slag silicon fertilizer mitigates the negative effects of elevated UV-B radiation on photosynthesis and transpiration in rice.

Effects of silicon application on diurnal variations of physiological properties of rice leaves of plants at the heading stage under elevated UV-B radiation.

PubMed

Lou, Yun-sheng; Wu, Lei; Lixuan, Ren; Meng, Yan; Shidi, Zhao; Huaiwei, Zhu; Yiwei, Zhang

2016-02-01

We investigated the effects of silicon (Si) application on diurnal variations of photosynthetic and transpiration physiological parameters in potted rice (Oryza sativa L. cv Nanjing 45) at the heading stage. The plants were subjected to two UV-B radiation levels, i.e., reference UV-B (A, ambient, 12.0 kJ m(-2) day(-1)) and elevated UV-B radiation (E, a 20% higher dose of UV-B than the reference, 14.4 kJ m(-2) day(-1)), and four Si application levels, i.e., Si0 (no silicon supplementation, 0 kg SiO2 ha(-1)), Si1 (sodium silicate, 100 kg SiO2 ha(-1)), Si2 (sodium silicate, 200 kg SiO2 ha(-1)), and Si3 (slag silicon fertilizer, 200 kg SiO2 ha(-1)). Compared with the reference, elevated UV-B radiation decreased the diurnal mean values of the net photosynthetic rate (Pn), intercellular carbon dioxide (CO2) concentration (Ci), transpiration rate (Tr), stomatal conductivity (Gs), and water use efficiency (WUE) by 11.3, 5.5, 10.4, 20.3, and 6.3%, respectively, in plants not supplemented with silicon (Si0), and decreased the above parameters by 3.8-5.5, 0.7-4.8, 4.0-8.7, 7.4-20.2, and 0.7-5.9%, respectively, in plants treated with silicon (Si1, Si2, and Si3), indicating that silicon application mitigates the negative effects of elevated UV-B radiation. Under elevated UV-B radiation, silicon application (Si1, Si2, and Si3) increased the diurnal mean values of Pn, Ci, Gs, and WUE by 16.9-28.0, 3.5-14.3, 16.8-38.7, and 29.0-51.2%, respectively, but decreased Tr by 1.9-10.8%, compared with plants not treated with silicon (E+Si0), indicating that silicon application mitigates the negative effects of elevated UV-B radiation by significantly increasing the P n, C i, G s, and WUE and decreasing the T r of rice. Evident differences existed in mitigating the depressive effects of elevated UV-B radiation on diurnal variations of physiological parameters among different silicon application treatments, exhibiting as Si3>Si2>Si1>Si0. In addition to recycling steel industrial wastes, the application of slag silicon fertilizer mitigates the negative effects of elevated UV-B radiation on photosynthesis and transpiration in rice.

SiGe quantum wells for uncooled long wavelength infra-red radiation (LWIR) sensors

NASA Astrophysics Data System (ADS)

Wissmar, S. G. E.; Radamsson, H. H.; Yamamoto, Y.; Tillack, B.; Vieider, C.; Andersson, J. Y.

2008-03-01

We demonstrate a novel single-crystalline high-performance thermistor material based on SiGe quantum well heterostructures. The SiGe/Si quantum wells are grown epitaxially on standard Si [001] substrates. Holes are used as charge carriers utilizing the discontinuities in the valence band structure. By optimizing design parameters such as the barrier height (by variation of the germanium content) and the fermi level Ef (by variation of the quantum well width and doping level) of the material, the layer structure can be tailored. Then a very high temperature coefficient of resistivity (TCR) can be obtained which is superior to the previous reported conventional thin film materials such as vanadium oxide and amorphous silicon. In addition, the high quality crystalline material promises very low 1/f-noise characteristics promoting an outstanding signal to noise ratio as well as well defined and uniform material properties. High-resolution X-ray diffraction was applied to characterize the thickness and Ge content of QWs. The results show sharp oscillations indicating an almost ideal super lattice with negligible relaxation and low defect density. The impact of growth temperature on the thermistor material properties was characterized by analyzing how the resulting strain primarily affects the performance of the TCR and 1/f noise. Results illustrate a value of 3.3 %/K for TCR with a low 1/f noise.

Probing Stress States in Silicon Nanowires During Electrochemical Lithiation Using In Situ Synchrotron X-Ray Microdiffraction

DOE PAGES

Ali, Imran; Tippabhotla, Sasi Kumar; Radchenko, Ihor; ...

2018-04-04

Silicon is considered as a promising anode material for the next-generation lithium-ion battery (LIB) due to its high capacity at nanoscale. However, silicon expands up to 300% during lithiation, which induces high stresses and leads to fractures. To design silicon nanostructures that could minimize fracture, it is important to understand and characterize stress states in the silicon nanostructures during lithiation. Synchrotron X-ray microdiffraction has proven to be effective in revealing insights of mechanical stress and other mechanics considerations in small-scale crystalline structures used in many important technological applications, such as microelectronics, nanotechnology, and energy systems. In the present study, anmore » in situ synchrotron X-ray microdiffraction experiment was conducted to elucidate the mechanical stress states during the first electrochemical cycle of lithiation in single-crystalline silicon nanowires (SiNWs) in an LIB test cell. Morphological changes in the SiNWs at different levels of lithiation were also studied using scanning electron microscope (SEM). It was found from SEM observation that lithiation commenced predominantly at the top surface of SiNWs followed by further progression toward the bottom of the SiNWs gradually. The hydrostatic stress of the crystalline core of the SiNWs at different levels of electrochemical lithiation was determined using the in situ synchrotron X-ray microdiffraction technique. We found that the crystalline core of the SiNWs became highly compressive (up to -325.5 MPa) once lithiation started. In conclusion, this finding helps unravel insights about mechanical stress states in the SiNWs during the electrochemical lithiation, which could potentially pave the path toward the fracture-free design of silicon nanostructure anode materials in the next-generation LIB.« less

Probing Stress States in Silicon Nanowires During Electrochemical Lithiation Using In Situ Synchrotron X-Ray Microdiffraction

DOE Office of Scientific and Technical Information (OSTI.GOV)

Ali, Imran; Tippabhotla, Sasi Kumar; Radchenko, Ihor

Silicon is considered as a promising anode material for the next-generation lithium-ion battery (LIB) due to its high capacity at nanoscale. However, silicon expands up to 300% during lithiation, which induces high stresses and leads to fractures. To design silicon nanostructures that could minimize fracture, it is important to understand and characterize stress states in the silicon nanostructures during lithiation. Synchrotron X-ray microdiffraction has proven to be effective in revealing insights of mechanical stress and other mechanics considerations in small-scale crystalline structures used in many important technological applications, such as microelectronics, nanotechnology, and energy systems. In the present study, anmore » in situ synchrotron X-ray microdiffraction experiment was conducted to elucidate the mechanical stress states during the first electrochemical cycle of lithiation in single-crystalline silicon nanowires (SiNWs) in an LIB test cell. Morphological changes in the SiNWs at different levels of lithiation were also studied using scanning electron microscope (SEM). It was found from SEM observation that lithiation commenced predominantly at the top surface of SiNWs followed by further progression toward the bottom of the SiNWs gradually. The hydrostatic stress of the crystalline core of the SiNWs at different levels of electrochemical lithiation was determined using the in situ synchrotron X-ray microdiffraction technique. We found that the crystalline core of the SiNWs became highly compressive (up to -325.5 MPa) once lithiation started. In conclusion, this finding helps unravel insights about mechanical stress states in the SiNWs during the electrochemical lithiation, which could potentially pave the path toward the fracture-free design of silicon nanostructure anode materials in the next-generation LIB.« less

Dexamethasone implant in silicone oil: in vitro behavior.

PubMed

Flores-Villalobos, Erick Omar; Ramírez-Estudillo, J Abel; Robles-Contreras, Atzin; Oliva-Ramírez, Jacqueline L

2018-01-01

To determine the effect of the silicone on the dexamethasone intravitreal implant. Basic, experimental, prospective and transversal study performed at the hospital "Nuestra Señora de la Luz" in Mexico City. One dexamethasone implant was placed in a test tube with 4 mL of each tamponade medium: 1000cS, 5000cS and heavy silicone oil; basic saline solution was used as the control medium. Photographs were taken weekly for 12 months. 200 µL samples were taken from each medium at 24 h, 1, 2 weeks and monthly for 12 months. ELISA test was performed to quantify dexamethasone release in every sample. An inflammatory stimulus was created and later exposed it to every sample in order to test their anti-inflammatory capacity by cytokine analysis using cytometric bead array. Statistically significant results were obtained with p < 0.05. Photographic follow-up showed disintegration of the implant in control medium. Implants in silicone oil suffered no changes during follow-up. Dexamethasone levels in control medium showed stability from month 2 to 12. Silicone oil mediums showed irregular dexamethasone release during the 1 year period. Dexamethasone in control medium had inhibitory effects on TNF-α starting at 24 h (p < 0.001) and remained stable. Dexamethasone in 1000cS silicone oil showed inhibitory effects from month 2 (p < 0.001) until month 6 (p < 0.001). Implants in denser silicone oils showed no inhibitory effects in any of the samples. Denser mediums altered the implant pharmacokinetics and showed no anti-inflammatory effects even when concentrations were quantified at levels similar to control medium in vitro.

Physical and biological evaluations of sintered hydroxyapatite/silicone composite with covalent bonding for a percutaneous implant material.

PubMed

Furuzono, Tsutomu; Wang, Pao-Li; Korematsu, Arata; Miyazaki, Kozo; Oido-Mori, Mari; Kowashi, Yusuke; Ohura, Kiyoshi; Tanaka, Junzo; Kishida, Akio

2003-05-15

A composite (HA/silicone) of hydroxyapatite (HA) microparticles with an average diameter of 2.0 micro m covalently linked to a silicone substrate has been developed, and its physical and biological properties as a percutaneous soft-tissue-compatible material have been evaluated. In tensile property measurement, samples of HA/silicone and the original silicone were similar in tensile strength, ca. 7.8 MPa, and elongation at break, ca. 570%. It was found that chemical surface modification with HA particles presented no mechanical disadvantage. In an adhesive-tape peeling test, scanning electron microscopic (SEM) observation showed that HA particles coupled directly to the substrate were not removed. HA particles may bond strongly with the substrate. In human periodontal ligament fibroblast attachment and proliferation experiments, the number of cells attached to HA/silicone was 14 times greater than that attached to the original silicone after 24 h of incubation. The value on HA/silicone was ca. 80% versus that on a tissue-culture plastic used as a positive control. After 72 h of incubation, the number of cells grown on HA/silicone increased to the level of the positive control. In observation of fluorescence microscopy stained by Hoechst 33342, cells appeared to tightly adhere to HA particles coupled to the silicone sheet due to intact nuclear morphology. Observation of cells by fluorescence dye with rhodamin phalloidin showed an extensive F-actin cytoskeleton on HA/silicone. In a 4-week animal implant test, force required to pull out the HA/silicone sheet was 15 times that of the original silicone. HA-particle coating on silicone with covalent linkage gave the inert surface bioactivity. The HA composite thus effectively prevents germ infection percutaneously. Copyright 2003 Wiley Periodicals, Inc. J Biomed Mater Res Part B: Appl Biomater 65B: 217-226, 2003

Power-law viscous materials for analogue experiments: New data on the rheology of highly-filled silicone polymers

NASA Astrophysics Data System (ADS)

Boutelier, D.; Schrank, C.; Cruden, A.

2008-03-01

The selection of appropriate analogue materials is a central consideration in the design of realistic physical models. We investigate the rheology of highly-filled silicone polymers in order to find materials with a power-law strain-rate softening rheology suitable for modelling rock deformation by dislocation creep and report the rheological properties of the materials as functions of the filler content. The mixtures exhibit strain-rate softening behaviour but with increasing amounts of filler become strain-dependent. For the strain-independent viscous materials, flow laws are presented while for strain-dependent materials the relative importance of strain and strain rate softening/hardening is reported. If the stress or strain rate is above a threshold value some highly-filled silicone polymers may be considered linear visco-elastic (strain independent) and power-law strain-rate softening. The power-law exponent can be raised from 1 to ˜3 by using mixtures of high-viscosity silicone and plasticine. However, the need for high shear strain rates to obtain the power-law rheology imposes some restrictions on the usage of such materials for geodynamic modelling. Two simple shear experiments are presented that use Newtonian and power-law strain-rate softening materials. The results demonstrate how materials with power-law rheology result in better strain localization in analogue experiments.

Fabrication of Silicon Backshorts with Improved Out-of-Band Rejection for Waveguide-Coupled Superconducting Detectors

NASA Technical Reports Server (NTRS)

Crowe, Erik J.; Bennett, Charles L.; Chuss, David T.; Denis, Kevin L.; Eimer, Joseph; Lourie, Nathan; Marriage, Tobias; Moseley, Samuel H.; Rostem, Karwan; Stevenson, Thomas R.;

Mitotic trafficking of silicon microparticles†

PubMed Central

Serda, Rita E.; Ferrati, Silvia; Godin, Biana; Tasciotti, Ennio; Liu, XueWu

2010-01-01

Multistage carriers were recently introduced by our laboratory, with the concurrent objectives of co-localized delivery of multiple therapeutic agents, the “theranostic” integration of bioactive moieties with imaging contrast, and the selective, potentially personalized bypassing of the multiplicity of biological barriers that adversely impact biodistribution of vascularly injected particulates. Mesoporous (“nanoporous”) silicon microparticles were selected as primary carriers in multi-stage devices, with targets including vascular endothelia at pathological lesions. The objective of this study was to evaluate biocompatibility of mesoporous silicon microparticles with endothelial cells using in vitro assays with an emphasis on microparticle compatibility with mitotic events. We observed that vascular endothelial cells, following internalization of silicon microparticles, maintain cellular integrity, as demonstrated by cellular morphology, viability and intact mitotic trafficking of vesicles bearing silicon microparticles. The presence of gold or iron oxide nanoparticles within the porous matrix did not alter the cellular uptake of particles or the viability of endothelial cells subsequent to engulfment of microparticles. Endothelial cells maintained basal levels of IL-6 and IL-8 release in the presence of silicon microparticles. This is the first study that demonstrates polarized, ordered partitioning of endosomes based on tracking microparticles. The finding that mitotic sorting of endosomes is unencumbered by the presence of nanoporous silicon microparticles advocates the use of silicon microparticles for biomedical applications. PMID:20644846

Molecular-level Analysis of Shock-wave Physics and Derivation of the Hugoniot Relations for Soda-lime Glass

DTIC Science & Technology

2011-06-17

based glasses like fused silica and soda - lime glass , the polyhedral central cation is silicon. In this case, each silicon is surrounded by four oxygen...to two network forming cations) oxygen atoms per network polyhedron. The equilibrium values for this parameter in fused silica and soda - lime glass ...Molecular-level analysis of shock-wave physics and derivation of the Hugoniot relations for soda - lime glass M. Grujicic • B. Pandurangan • W. C. Bell

Optimal scan strategy for mega-pixel and kilo-gray-level OLED-on-silicon microdisplay.

PubMed

Ji, Yuan; Ran, Feng; Ji, Weigui; Xu, Meihua; Chen, Zhangjing; Jiang, Yuxi; Shen, Weixin

2012-06-10

The digital pixel driving scheme makes the organic light-emitting diode (OLED) microdisplays more immune to the pixel luminance variations and simplifies the circuit architecture and design flow compared to the analog pixel driving scheme. Additionally, it is easily applied in full digital systems. However, the data bottleneck becomes a notable problem as the number of pixels and gray levels grow dramatically. This paper will discuss the digital driving ability to achieve kilogray-levels for megapixel displays. The optimal scan strategy is proposed for creating ultra high gray levels and increasing light efficiency and contrast ratio. Two correction schemes are discussed to improve the gray level linearity. A 1280×1024×3 OLED-on-silicon microdisplay, with 4096 gray levels, is designed based on the optimal scan strategy. The circuit driver is integrated in the silicon backplane chip in the 0.35 μm 3.3 V-6 V dual voltage one polysilicon layer, four metal layers (1P4M) complementary metal-oxide semiconductor (CMOS) process with custom top metal. The design aspects of the optimal scan controller are also discussed. The test results show the gray level linearity of the correction schemes for the optimal scan strategy is acceptable by the human eye.

Mid-IR absorption sensing of heavy water using a silicon-on-sapphire waveguide.

PubMed

Singh, Neetesh; Casas-Bedoya, Alvaro; Hudson, Darren D; Read, Andrew; Mägi, Eric; Eggleton, Benjamin J

2016-12-15

We demonstrate a compact silicon-on-sapphire (SOS) strip waveguide sensor for mid-IR absorption spectroscopy. This device can be used for gas and liquid sensing, especially to detect chemically similar molecules and precisely characterize extremely absorptive liquids that are difficult to detect by conventional infrared transmission techniques. We reliably measure concentrations up to 0.25% of heavy water (D₂O) in a D₂O-H₂O mixture at its maximum absorption band at around 4 μm. This complementary metal-oxide-semiconductor (CMOS) compatible SOS D₂O sensor is promising for applications such as measuring body fat content or detection of coolant leakage in nuclear reactors.

Impurity engineering of Czochralski silicon used for ultra large-scaled-integrated circuits

NASA Astrophysics Data System (ADS)

Yang, Deren; Chen, Jiahe; Ma, Xiangyang; Que, Duanlin

2009-01-01

Impurities in Czochralski silicon (Cz-Si) used for ultra large-scaled-integrated (ULSI) circuits have been believed to deteriorate the performance of devices. In this paper, a review of the recent processes from our investigation on internal gettering in Cz-Si wafers which were doped with nitrogen, germanium and/or high content of carbon is presented. It has been suggested that those impurities enhance oxygen precipitation, and create both denser bulk microdefects and enough denuded zone with the desirable width, which is benefit of the internal gettering of metal contamination. Based on the experimental facts, a potential mechanism of impurity doping on the internal gettering structure is interpreted and, a new concept of 'impurity engineering' for Cz-Si used for ULSI is proposed.

On the clathrate form of elemental silicon, Si 136: preparation and characterisation of Na xSi 136 ( x→0)

NASA Astrophysics Data System (ADS)

Ammar, Abdelaziz; Cros, Christian; Pouchard, Michel; Jaussaud, Nicolas; Bassat, Jean-Marc; Villeneuve, Gérard; Duttine, Mathieu; Ménétrier, Michel; Reny, Edouard

2004-05-01

The clathrate form of silicon, Si 136 (otherwise known as Si 34), having a residual sodium content as low as 35 ppm (i.e., x˜0.0058 in Na xSi 136), has been prepared by thermal decomposition of NaSi under high vacuum, followed by several other treatments under vacuum, and completed by repeated reactions with iodine. The residual amount of sodium has been determined by a combination of analytic and spectroscopic methods involving XRD, electron probe microanalysis, atomic absorption, NMR and EPR. This latter technique proved to be very appropriate to the characterisation of very diluted sodium atoms in such clathrate structure and to the quantitative determination of its residual concentration.

Reliability and efficacy of organic passivation for polycrystalline silicon solar cells at room temperature

NASA Astrophysics Data System (ADS)

Shinde, Onkar S.; Funde, Adinath M.; Jadkar, Sandesh R.; Dusane, Rajiv O.; Dhere, Neelkanth G.; Ghaisas, Subhash V.

2016-09-01

Oleylamine is used as a passivating layer instead of commercial high temperature SiNx. Oleylamine coating applied on the n-type emitter side with p-type base polycrystalline silicon solar cells at room temperature using a simple spin coating method. It has been observed that there is 16% increase in efficiency after Oleylamine coating. Further, the solar cell was subjected to standard characterization namely current-voltage measurement for electrical parameters and Fourier transform infrared spectroscopy to understand the interaction of emitter surface and passivating Oleylamine. However, the passivation layer is not stable due to the reaction between Oleylamine and ambient air content such as humidity and carbon dioxide. This degradation can be prevented with suitable overcoating.

Membrane penetration enhancement of ibuprofen using supersaturation.

PubMed

Iervolino, M; Raghavan, S L; Hadgraft, J

2000-04-05

Permeation enhancement of ibuprofen from supersaturated solutions formed using the cosolvent technique was investigated using silicone as a model membrane. Hydroxpropyl methyl cellulose and hydroxpropyl-beta-cyclodextrin were used to stabilise the supersaturated states. Physical stability studies showed best results for low drug concentrations in a 40:60 propylene glycol/water cosolvent system. Variations in flux across model silicone membranes from saturated solutions were observed as the PG content was increased. The flux of IBU increased with the degree of saturation for solutions prepared in a 40:60 PG/water cosolvent mixture. HPMC and CD were found to be effective in enhancing the stability of supersaturated solutions of IBU. The mechanisms of action are different for the two additives and are discussed.

Electrical evaluation of crack generation in SiNx and SiOxNy thin-film encapsulation layers for OLED displays

NASA Astrophysics Data System (ADS)

Park, Eun Kil; Kim, Sungmin; Heo, Jaeyeong; Kim, Hyeong Joon

2016-05-01

By measuring leakage current density, we detected crack generation in silicon nitride (SiNx) and silicon oxynitride (SiOxNy) thin-film encapsulation layers, and correlated with the films' water vapor permeability characteristics. After repeated bending cycles, both the changes in water vapor transmission rate and leakage current density were directly proportional to the crack density. Thick SiNx films had better water vapor barrier characteristics in their pristine state, but cyclic loading led to fast failure. Varying the atomic concentration of the SiOxNy films affected their bending reliability. We attribute these differences to changes in the shape of the crack tip as the oxygen content varies.

The effect of alumina in slag on manganese and silicon distributions in silicomanganese smelting

NASA Astrophysics Data System (ADS)

Swinbourne, D. R.; Rankin, W. J.; Eric, R. H.

1995-02-01

The distribution ratios of manganese and silicon between silicomanganese alloy and slag, in equilibrium with carbon, were investigated at 1500 °C. The alumina content of the slag was varied from about 9 to 32 pct. Both distribution ratios decreased as A12O3 increased to about 20 pct and, thereafter, remained constant. The value of the “apparent equilibrium constant” displayed a maximum at about 24 pct A12O3, mainly because of the variation in the values of the activity coefficients of SiO2 and MnO. It was concluded that the slag and silicomanganese alloy in a submerged arc furnace are at, or at least close to, equilibrium.

Investigation of the plastic fracture of high-strength aluminum alloys

NASA Technical Reports Server (NTRS)

Van Stone, R. H.; Merchant, R. H.; Low, J. R., Jr.

1974-01-01

In a study of plastic fracture in five high-strength aluminum alloys (2014, 2024, 2124, 7075, and 7079), it has been shown that fracture toughness is affected primarily by the size and volume fraction of the larger (2 to 10 microms) second-phase particles. Certain of these particles crack at small plastic strains, nucleating voids which, with further plastic strain, coalesce to cause fracture. Not all second-phase particles crack at small plastic strains, and qualitative analysis of those which are primarily responsible for void nucleation shows that they contain iron or silicon or both. This result suggests that a reduction in the iron and silicon impurity content of the alloys should improve fracture toughness without loss of strength.

Scanning probe microscopy for the analysis of composite Ti/hydrocarbon plasma polymer thin films

NASA Astrophysics Data System (ADS)

Choukourov, A.; Grinevich, A.; Slavinska, D.; Biederman, H.; Saito, N.; Takai, O.

2008-03-01

Composite Ti/hydrocarbon plasma polymer films with different Ti concentration were deposited on silicon by dc magnetron sputtering of titanium in an atmosphere of argon and hexane. As measured by Kelvin force microscopy and visco-elastic atomic force microscopy, respectively, surface potential and hardness increase with increasing Ti content. Adhesion force to silicon and to fibrinogen molecules was stronger for the Ti-rich films as evaluated from the AFM force-distance curves. Fibrinogen forms a very soft layer on these composites with part of the protein molecules embedded in the outermost region of the plasma polymer. An increase of the surface charge due to fibrinogen adsorption has been observed and attributed to positively charged αC domains of fibrinogen molecule.

Analysis of periprosthetic capsular tissue from women with silicone breast implants by magic-angle spinning NMR.

PubMed

Garrido, L; Young, V L

1999-09-01

The amount of silicone (polydimethylsiloxane [PDMS]) in capsular tissue surgically removed from women with breast implants was measured by using (29)Si and (1)H magic-angle spinning solid-state NMR spectroscopy. Twelve women having smooth surface silicone gel-filled implants, including a subject with "low-bleed" double-lumen implants, had detectable levels of PDMS ranging from 0. 05 to 9.8% silicon in wet tissue (w/w). No silicon-containing compounds other than PDMS were detected. No correlation was found between the amount of PDMS measured in the capsular tissue and the length of implantation time (Pearson correlation coefficient, r = 0. 22). The results showed no relationship between higher amounts of PDMS and capsular contracture (p = 0.74) or other symptoms (p = 0. 53). Magn Reson Med 42:436-441, 1999. Copyright 1999 Wiley-Liss, Inc.

Low cost silicon solar array project silicon materials task: Establishment of the feasibility of a process capable of low-cost, high volume production of silane (step 1) and the pyrolysis of silane to semiconductor-grade silicon (step 2)

NASA Technical Reports Server (NTRS)

Breneman, W. C.; Cheung, H.; Farrier, E. G.; Morihara, H.

1977-01-01

A quartz fluid bed reactor capable of operating at temperatures of up to 1000 C was designed, constructed, and successfully operated. During a 30 minute experiment, silane was decomposed within the reactor with no pyrolysis occurring on the reactor wall or on the gas injection system. A hammer mill/roller-crusher system appeared to be the most practical method for producing seed material from bulk silicon. No measurable impurities were detected in the silicon powder produced by the free space reactor, using the cathode layer emission spectroscopic technique. Impurity concentration followed by emission spectroscopic examination of the residue indicated a total impurity level of 2 micrograms/gram. A pellet cast from this powder had an electrical resistivity of 35 to 45 ohm-cm and P-type conductivity.

Hyperpolarized Porous Silicon Nanoparticles: Potential Theragnostic Material for ²⁹Si Magnetic Resonance Imaging.

PubMed

Seo, Hyeonglim; Choi, Ikjang; Whiting, Nicholas; Hu, Jingzhe; Luu, Quy Son; Pudakalakatti, Shivanand; McCowan, Caitlin; Kim, Yaewon; Zacharias, Niki; Lee, Seunghyun; Bhattacharya, Pratip; Lee, Youngbok

2018-05-20

Porous silicon nanoparticles have recently garnered attention as potentially-promising biomedical platforms for drug delivery and medical diagnostics. Here, we demonstrate porous silicon nanoparticles as contrast agents for ²⁹Si magnetic resonance imaging. Size-controlled porous silicon nanoparticles were synthesized by magnesiothermic reduction of silica nanoparticles and were surface activated for further functionalization. Particles were hyperpolarized via dynamic nuclear polarization to enhance their ²⁹Si MR signals; the particles demonstrated long ²⁹Si spin-lattice relaxation (T₁) times (~ 25 mins), which suggests potential applicability for medical imaging. Furthermore, ²⁹Si hyperpolarization levels were sufficient to allow ²⁹Si MRI in phantoms. These results underscore the potential of porous silicon nanoparticles that, when combined with hyperpolarized magnetic resonance imaging, can be a powerful theragnostic deep tissue imaging platform to interrogate various biomolecular processes in vivo. © 2018 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Energy levels distribution in supersaturated silicon with titanium for photovoltaic applications

DOE Office of Scientific and Technical Information (OSTI.GOV)

Pérez, E., E-mail: eduper@ele.uva.es; Castán, H.; García, H.

2015-01-12

In the attempt to form an intermediate band in the bandgap of silicon substrates to give it the capability to absorb infrared radiation, we studied the deep levels in supersaturated silicon with titanium. The technique used to characterize the energy levels was the thermal admittance spectroscopy. Our experimental results showed that in samples with titanium concentration just under Mott limit there was a relationship among the activation energy value and the capture cross section value. This relationship obeys to the well known Meyer-Neldel rule, which typically appears in processes involving multiple excitations, like carrier capture/emission in deep levels, and itmore » is generally observed in disordered systems. The obtained characteristic Meyer-Neldel parameters were Tmn = 176 K and kTmn = 15 meV. The energy value could be associated to the typical energy of the phonons in the substrate. The almost perfect adjust of all experimental data to the same straight line provides further evidence of the validity of the Meyer Neldel rule, and may contribute to obtain a deeper insight on the ultimate meaning of this phenomenon.« less

A transistor based on 2D material and silicon junction

NASA Astrophysics Data System (ADS)

Kim, Sanghoek; Lee, Seunghyun

2017-07-01

A new type of graphene-silicon junction transistor based on bipolar charge-carrier injection was designed and investigated. In contrast to many recent studies on graphene field-effect transistor (FET), this device is a new type of bipolar junction transistor (BJT). The transistor fully utilizes the Fermi level tunability of graphene under bias to increase the minority-carrier injection efficiency of the base-emitter junction in the BJT. Single-layer graphene was used to form the emitter and the collector, and a p-type silicon was used as the base. The output of this transistor was compared with a metal-silicon junction transistor ( i.e. surface-barrier transistor) to understand the difference between a graphene-silicon junction and metal-silicon Schottky junction. A significantly higher current gain was observed in the graphene-silicon junction transistor as the base current was increased. The graphene-semiconductor heterojunction transistor offers several unique advantages, such as an extremely thin device profile, a low-temperature (< 110 °C) fabrication process, low cost (no furnace process), and high-temperature tolerance due to graphene's stability. A transistor current gain ( β) of 33.7 and a common-emitter amplifier voltage gain of 24.9 were achieved.

Confined in-fiber solidification and structural control of silicon and silicon-germanium microparticles.

PubMed

Gumennik, Alexander; Levy, Etgar C; Grena, Benjamin; Hou, Chong; Rein, Michael; Abouraddy, Ayman F; Joannopoulos, John D; Fink, Yoel

2017-07-11

Crystallization of microdroplets of molten alloys could, in principle, present a number of possible morphological outcomes, depending on the symmetry of the propagating solidification front and its velocity, such as axial or spherically symmetric species segregation. However, because of thermal or constitutional supercooling, resulting droplets often only display dendritic morphologies. Here we report on the crystallization of alloyed droplets of controlled micrometer dimensions comprising silicon and germanium, leading to a number of surprising outcomes. We first produce an array of silicon-germanium particles embedded in silica, through capillary breakup of an alloy-core silica-cladding fiber. Heating and subsequent controlled cooling of individual particles with a two-wavelength laser setup allows us to realize two different morphologies, the first being a silicon-germanium compositionally segregated Janus particle oriented with respect to the illumination axis and the second being a sphere made of dendrites of germanium in silicon. Gigapascal-level compressive stresses are measured within pure silicon solidified in silica as a direct consequence of volume-constrained solidification of a material undergoing anomalous expansion. The ability to generate microspheres with controlled morphology and unusual stresses could pave the way toward advanced integrated in-fiber electronic or optoelectronic devices.

Spin-split silicon states at step edges of Si(553)-Au

NASA Astrophysics Data System (ADS)

Biedermann, K.; Regensburger, S.; Fauster, Th.; Himpsel, F. J.; Erwin, S. C.

2012-06-01

The quasi-one-dimensional Si(553)-Au surface is investigated with time-resolved two-photon photoemission and laser-based photoemission. Several occupied and unoccupied states inside and outside the bulk band gap of silicon were found near the center of the surface Brillouin zone. A nondispersing unoccupied state 0.62 eV above the Fermi level with a lifetime of 125 fs matches the spin-split silicon step-edge state predicted by density functional theory calculations. Two occupied bands can be associated with the bands calculated for nonpolarized step-edge atoms.

Dynamic Moisture Sorption and Desorption in Fumed Silica-filled Silicone Foam

DOE Office of Scientific and Technical Information (OSTI.GOV)

Trautschold, Olivia Carol

Characterizing dynamic moisture sorption and desorption in fumed silica-filled silicone foam is necessary for determining material compatibilities and life predictions, particularly in sealed environments that may be exposed to a range of environmental conditions. Thermogravimetric analysis (TGA) and near infrared spectroscopy (NIR) were performed on S5470 fumed silica-filled silicone foam to determine the weight percent of moisture at saturation. Additionally, TGA was used to determine the time, temperature, and relative humidity levels required for sorption and desorption of physisorbed moisture in S5470.

Systematic molecular-level design of binders incorporating Meldrum's acid for silicon anodes in lithium rechargeable batteries.

PubMed

Kwon, Tae-woo; Jeong, You Kyeong; Lee, Inhwa; Kim, Taek-Soo; Choi, Jang Wook; Coskun, Ali

2014-12-17

Covalent or Noncovalent? Systematic investigation of polymeric binders incorporating Meldrum's acid reveals most critical binder properties for silicon -anodes in lithium ion batteries, that is self-healing effect facilitated by a series of noncovalent interactions. © 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Silicon surface barrier detectors used for liquid hydrogen density measurement

NASA Technical Reports Server (NTRS)

James, D. T.; Milam, J. K.; Winslett, H. B.

1968-01-01

Multichannel system employing a radioisotope radiation source, strontium-90, radiation detector, and a silicon surface barrier detector, measures the local density of liquid hydrogen at various levels in a storage tank. The instrument contains electronic equipment for collecting the density information, and a data handling system for processing this information.

Reference Data for the Density and Viscosity of Liquid Cadmium, Cobalt, Gallium, Indium, Mercury, Silicon, Thallium, and Zinc

NASA Astrophysics Data System (ADS)

Assael, Marc J.; Armyra, Ivi J.; Brillo, Juergen; Stankus, Sergei V.; Wu, Jiangtao; Wakeham, William A.

2012-09-01

The available experimental data for the density and viscosity of liquid cadmium, cobalt, gallium, indium, mercury, silicon, thallium, and zinc have been critically examined with the intention of establishing both a density and a viscosity standard. All experimental data have been categorized into primary and secondary data according to the quality of measurement, the technique employed and the presentation of the data, as specified by a series of criteria. The proposed standard reference correlations for the density of liquid cadmium, cobalt, gallium, indium, silicon, thallium, and zinc are characterized by percent deviations at the 95% confidence level of 0.6, 2.1, 0.4, 0.5, 2.2, 0.9, and 0.7, respectively. In the case of mercury, since density reference values already exist, no further work was carried out. The standard reference correlations for the viscosity of liquid cadmium, cobalt, gallium, indium, mercury, silicon, thallium, and zinc are characterized by percent deviations at the 95% confidence level of 9.4, 14.0, 13.5, 2.1, 7.3, 15.7, 5.1, and 9.3, respectively.

Investigation of a combined platinum and electron lifetime control treatment for silicon

NASA Astrophysics Data System (ADS)

Jia, Yunpeng; Cui, Zhihang; Yang, Fei; Zhao, Bao; Zou, Shikai; Liang, Yongsheng

2017-02-01

In silicon, the effect of Combined Lifetime Treatment (CLT) involving platinum diffusion and subsequent electron irradiation is different from the separate treatments of platinum diffusion and electron irradiation, even the treatment of electron irradiation followed by platinum diffusion. In this paper, we investigated the experimental behavior of different kinds of lifetime treated samples. We found that the reverse leakage current (Irr) increases with the increasing platinum diffusion temperature or electron irradiation dose in the separate treatments. Conversely, Irr of the CLT samples decreased with rising platinum diffusion temperature at the same dose of subsequent electron irradiation. By deep-level transient spectroscopy (DLTS), a new energy level E7 (Ec -0.376 eV) was found in our CLT samples. The new level E7 suppresses the dominance of the deeper level E8 (Ec -0.476 eV), which is caused by electron irradiation directly and results in Irr's increase. The formation of the level E7 comes from the complex defect-combined effect between platinum atoms and silicon vacancies, and it affects device's characteristics finally. These research will be helpful to the development of platinum-diffused devices used in intense electron irradiation environments.

Low-temperature anneal of the divacancy in p-type silicon: A transformation from V2 to VxOy complexes?

NASA Astrophysics Data System (ADS)

Trauwaert, M.-A.; Vanhellemont, J.; Maes, H. E.; Van Bavel, A.-M.; Langouche, G.; Clauws, P.

1995-05-01

Deep level transient spectroscopy of electron irradiated p-type silicon reveals a defect level at Ev+0.19 eV, which during anneal treatments at 200 °C gradually transforms into a band with Ev+0.24 eV. Both energy levels however, are reported in literature to be the donor level of the divacancy. In the present study it is proposed that during the low-temperature anneal the divacancy interacts with oxygen, forming a V2O complex. During heat treatments at temperatures in the range between 250 and 450 °C a further shift of the deep level to higher energy positions is observed which might be related with other vacancy-oxygen complexes.

Silicon solar cell efficiency improvement: Status and outlook

NASA Technical Reports Server (NTRS)

Wolf, M.

1985-01-01

Efficiency and operating life is an economic attribute in silicon solar cells application. The efficiency improvements made during the 30 year existence of the silicon solar cells, from about 6% efficiency at the beginning to 19% in the most recent experimental cells is illustrated. In the more stationary periods, the effort was oriented towards improving radiation resistance and yields on the production lines, while, in other periods, the emphasis was on reaching new levels of efficiency through better cell design and improved material processing. First results were forthcoming from the recent efforts. Considerably more efficiency advancement in silicon solar cells is expected, and the anticipated attainment of efficiencies significantly above 20% is discussed. Major advances in material processing and in the resulting material perfection are required.

Neutron radiation tolerance of Au-activated silicon

NASA Technical Reports Server (NTRS)

Joyner, W. T.

1987-01-01

Double injection devices prepared by the introduction of deep traps, using the Au activation method have been found to tolerate gamma irradiation into the Gigarad (Si) region without significant degradation of operating characteristics. Silicon double injection devices, using deep levels creacted by Au diffusion, can tolerate fast neutron irradiation up to 10 to the 15th n/sq cm. Significant parameter degradation occurs at 10 to the 16th n/sq cm. However, since the actual doping of the basic material begins to change as a result of the transmutation of silicon into phosphorus for neutron fluences greater than 10 to the 17th/sq cm, the radiation tolerance of these devices is approaching the limit possible for any device based on initially doped silicon.

Silicon photonic dynamic optical channel leveler with external feedback loop.

PubMed

Doylend, J K; Jessop, P E; Knights, A P

2010-06-21

We demonstrate a dynamic optical channel leveler composed of a variable optical attenuator (VOA) integrated monolithically with a defect-mediated photodiode in a silicon photonic waveguide device. An external feedback loop mimics an analog circuit such that the photodiode directly controls the VOA to provide blind channel leveling within +/-1 dB across a 7-10 dB dynamic range for wavelengths from 1530 nm to 1570 nm. The device consumes approximately 50 mW electrical power and occupies a 6 mm x 0.1 mm footprint per channel. Dynamic leveling is accomplished without tapping optical power from the output path to the photodiode and thus the loss penalty is minimized.

N-type compensated silicon: resistivity, crystal growth, carrier lifetime, and relevant application for HIT solar cells

NASA Astrophysics Data System (ADS)

Li, Shuai; Gao, Wenxiu; Li, Zhen; Cheng, Haoran; Lin, Jinxia; Cheng, Qijin

2017-05-01

N-type compensated silicon shows unusual distribution of resistivity as crystal grows compared to the n-type uncompensated silicon. In this paper, evolutions of resistivities with varied concentrations of boron and varied starting resistivities of the n-type silicon are intensively calculated. Moreover, reduction of carrier mobility is taken into account by Schindler’s modified model of carrier mobility for the calculation of resistivity of the compensated silicon. As for substrates of solar cells, optimized starting resistivity and corresponding concentration of boron are suggested for better uniformity of resistivity and higher yield (fraction with ρ >0.5 ~ Ω \\centerdot \\text{cm} ) of the n-type compensated Cz crystal rod. A two-step growth method is investigated to obtain better uniformity of resistivity of crystal rod, and this method is very practical especially for the n-type compensated silicon. Regarding the carrier lifetime, the recombination by shallow energy-level dopants is taken into account for the compensated silicon, and evolution of carrier lifetime is simulated by considering all main recombination centers which agrees well with our measured carrier lifetimes as crystal grows. The n-type compensated silicon shows a larger reduction of carrier lifetime compared to the uncompensated silicon at the beginning of crystal growth, and recombination with a oxygen-related deep defect is sufficient to describe the reduction of degraded lifetime. Finally, standard heterojunction with intrinsic thin-layer (HIT) solar cells are made with substrates from the n-type compensated silicon rod, and a high efficiency of 22.1% is obtained with a high concentration (0.8× {{10}16}~\\text{c}{{\\text{m}}-3} ) of boron in the n-type compensated silicon feedstock. However, experimental efficiencies of HIT solar cells based on the n-type compensated silicon show an average reduction of 4% along with the crystal length compared to the uncompensated silicon. The obtained results enrich our knowledge on the n-type compensated silicon and contribute to the development of n-type compensated silicon-based solar cells for commercial application.

A novel high pressure, high temperature vessel used to conduct long-term stability measurements of silicon MEMS pressure transducers

NASA Astrophysics Data System (ADS)

Wisniewiski, David

2014-03-01

The need to quantify and to improve long-term stability of pressure transducers is a persistent requirement from the aerospace sector. Specifically, the incorporation of real-time pressure monitoring in aircraft landing gear, as exemplified in Tire Pressure Monitoring Systems (TPMS), has placed greater demand on the pressure transducer for improved performance and increased reliability which is manifested in low lifecycle cost and minimal maintenance downtime through fuel savings and increased life of the tire. Piezoresistive (PR) silicon MEMS pressure transducers are the primary choice as a transduction method for this measurement owing to their ability to be designed for the harsh environment seen in aircraft landing gear. However, these pressure transducers are only as valuable as the long-term stability they possess to ensure reliable, real-time monitoring over tens of years. The "heart" of the pressure transducer is the silicon MEMS element, and it is at this basic level where the long-term stability is established and needs to be quantified. A novel High Pressure, High Temperature (HPHT) vessel has been designed and constructed to facilitate this critical measurement of the silicon MEMS element directly through a process of mechanically "floating" the silicon MEMS element while being subjected to the extreme environments of pressure and temperature, simultaneously. Furthermore, the HPHT vessel is scalable to permit up to fifty specimens to be tested at one time to provide a statistically significant data population on which to draw reasonable conclusions on long-term stability. With the knowledge gained on the silicon MEMS element, higher level assembly to the pressure transducer envelope package can also be quantified as to the build-effects contribution to long-term stability in the same HPHT vessel due to its accommodating size. Accordingly, a HPHT vessel offering multiple levels of configurability and robustness in data measurement is presented, along with 10 year long-term stability results.

Fabrication and characterization of active nanostructures

NASA Astrophysics Data System (ADS)

Opondo, Noah F.

Three different nanostructure active devices have been designed, fabricated and characterized. Junctionless transistors based on highly-doped silicon nanowires fabricated using a bottom-up fabrication approach are first discussed. The fabrication avoids the ion implantation step since silicon nanowires are doped in-situ during growth. Germanium junctionless transistors fabricated with a top down approach starting from a germanium on insulator substrate and using a gate stack of high-k dielectrics and GeO2 are also presented. The levels and origin of low-frequency noise in junctionless transistor devices fabricated from silicon nanowires and also from GeOI devices are reported. Low-frequency noise is an indicator of the quality of the material, hence its characterization can reveal the quality and perhaps reliability of fabricated transistors. A novel method based on low-frequency noise measurement to envisage trap density in the semiconductor bandgap near the semiconductor/oxide interface of nanoscale silicon junctionless transistors (JLTs) is presented. Low-frequency noise characterization of JLTs biased in saturation is conducted at different gate biases. The noise spectrum indicates either a Lorentzian or 1/f. A simple analysis of the low-frequency noise data leads to the density of traps and their energy within the semiconductor bandgap. The level of noise in silicon JLT devices is lower than reported values on transistors fabricated using a top-down approach. This noise level can be significantly improved by improving the quality of dielectric and the channel interface. A micro-vacuum electron device based on silicon field emitters for cold cathode emission is also presented. The presented work utilizes vertical Si nanowires fabricated by means of self-assembly, standard lithography and etching techniques as field emitters in this dissertation. To obtain a high nanowire density, hence a high current density, a simple and inexpensive Langmuir Blodgett technique to deposit silica nanoparticles as a mask to etch Si is adopted. Fabrication and characterization of a metal-gated microtriode with a high current density and low operating voltage are presented.

VLED for Si wafer-level packaging

NASA Astrophysics Data System (ADS)

Chu, Chen-Fu; Chen, Chiming; Yen, Jui-Kang; Chen, Yung-Wei; Tsou, Chingfu; Chang, Chunming; Doan, Trung; Tran, Chuong Anh

2012-03-01

In this paper, we introduced the advantages of Vertical Light emitting diode (VLED) on copper alloy with Si-wafer level packaging technologies. The silicon-based packaging substrate starts with a <100> dou-ble-side polished p-type silicon wafer, then anisotropic wet etching technology is done to construct the re-flector depression and micro through-holes on the silicon substrate. The operating voltage, at a typical cur-rent of 350 milli-ampere (mA), is 3.2V. The operation voltage is less than 3.7V under higher current driving conditions of 1A. The VLED chip on Si package has excellent heat dissipation and can be operated at high currents up to 1A without efficiency degradation. The typical spatial radiation pattern emits a uniform light lambertian distribution from -65° to 65° which can be easily fit for secondary optics. The correlated color temperature (CCT) has only 5% variation for daylight and less than 2% variation for warm white, when the junction temperature is increased from 25°C to 110°C, suggesting a stable CCT during operation for general lighting application. Coupled with aspheric lens and micro lens array in a wafer level process, it has almost the same light distribution intensity for special secondary optics lighting applications. In addition, the ul-tra-violet (UV) VLED, featuring a silicon substrate and hard glass cover, manufactured by wafer level pack-aging emits high power UV wavelengths appropriate for curing, currency, document verification, tanning, medical, and sterilization applications.

Strength and flexibility properties of advanced ceramic fabrics

NASA Technical Reports Server (NTRS)

Sawko, P. M.; Tran, H. K.

1985-01-01

The mechanical properties of four advanced ceramic fabrics were measured at a temperature range of 23C to 1200C. The fabrics evaluated were silica, high and low-boria content aluminoborosilicate, and silicon carbide. Properties studied included fabric break strengths from room temperature to 1200C, and bending durability after temperature conditioning at 1200C and 1400C. The interaction of the fabric and ceramic insulation was also studied for shrinkage, appearance, bend resistance, and fabric-to-insulation bonding. Based on these tests, the low-boria content aluminoborosilicate fabric retained more strength and fabric durability than the other fabrics studied at high temperature.

Strength and flexibility properties of advanced ceramic fabrics

NASA Technical Reports Server (NTRS)

Sawko, P. M.; Tran, H. K.

1985-01-01

The mechanical properties of four advanced ceramic fabrics are measured at a temperature range of 23 C to 1200 C. The fabrics evaluated are silica, high-and low-boria content aluminoborosilicate, and silicon carbide. Properties studied include fabric break strengths from room temperature to 1200 C, and bending durability after temperature conditioning at 1200 C and 1400 C. The interaction of the fabric and ceramic insulation is also studied for shrinkage, appearance, bend resistance, and fabric-to-insulation bonding. Based on these tests, the low-boria content aluminoborosilicate fabric retains more strength and fabric durability than the other fabrics studied at high temperature.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Rabin, B.H.

A simple modified tape casting procedure has been developed for application to ceramic joining when the joining materials are in powder form. The method involves preparation of a slurry from the powder, solvent, and thermoplastic binder, and then casting directly onto the joining surface using a moving doctor blade. Handling of the tape prior to joining is not necessary: therefore, binder content is minimized, plasticizers are not required, and viscosity is controlled by solvent content. The utility of this technique for producing joints with thin, uniform interlayers is demonstrated for silicon carbide materials joined with TiC + Ni and SiCmore » + Si.« less

Release of low molecular weight silicones and platinum from silicone breast implants.

PubMed

Lykissa, E D; Kala, S V; Hurley, J B; Lebovitz, R M

1997-12-01

We have conducted a series of studies addressing the chemical composition of silicone gels from breast implants as well as the diffusion of low molecular weight silicones (LM-silicones) and heavy metals from intact implants into various surrounding media, namely, lipid-rich medium (soy oil), aqueous tissue culture medium (modified Dulbecco's medium, DMEM), or an emulsion consisting of DMEM plus 10% soy oil. LM-silicones in both implants and surrounding media were detected and quantitated using gas chromatography (GC) coupled with atomic emission (GC-AED) as well as mass spectrometric (GC/MS) detectors, which can detect silicones in the nanogram range. Platinum, a catalyst used in the preparation of silicone gels, was detected and quantitated using inductive argon-coupled plasma/mass spectrometry (ICP-MS), which can detect platinum in the parts per trillion range. Our results indicate that GC-detectable low molecular weight silicones contribute approximately 1-2% to the total gel mass and consist predominantly of cyclic and linear poly-(dimethylsiloxanes) ranging from 3 to 20 siloxane [(CH3)2-Si-O] units (molecular weight 200-1500). Platinum can be detected in implant gels at levels of approximately 700 micrograms/kg by ICP-MS. The major component of implant gels appears to be high molecular weight silicone polymers (HM-silicones) too large to be detected by GC. However, these HM-silicones can be converted almost quantitatively (80% by mass) to LM-silicones by heating implant gels at 150-180 degrees C for several hours. We also studied the rates at which LM-silicones and platinum leak through the intact implant outer shell into the surrounding media under a variety of conditions. Leakage of silicones was greatest when the surrounding medium was lipid-rich, and up to 10 mg/day LM-silicones was observed to diffuse into a lipid-rich medium per 250 g of implant at 37 degrees C. This rate of leakage was maintained over a 7-day experimental period. Similarly, platinum was also observed to leak through intact implants into lipid-containing media at rates of approximately 20-25 micrograms/day/250 g of implant at 37 degrees C. The rates at which both LM-silicones and platinum have been observed to leak from intact implants could lead to significant accumulation within lipid-rich tissues and should be investigated more fully in vivo.

Silicon materials task of the low cost solar array project, phase 2

NASA Technical Reports Server (NTRS)

Hopkins, R. H.; Davis, J. R., Jr.; Blais, P. D.; Rohatgi, A.; Rai-Choudhury, P.; Hanes, M. H.; Mccormick, J. R.

1977-01-01

The object of phase 2 of this program is to investigate and define the effects of various processes, contaminants and process-contaminant interactions in the performance of terrestrial solar cells. The major effort this quarter was in the areas of crystal growth and thermal processing, comparison of impurity effects in low and high resistivity silicon, modeling the behavior of p-type ingots containing Mo, and C and, quantitative analysis of bulk lifetime and junction degradation effects in contaminated solar cells. The performance of solar cells fabricated on silicon web crystals grown from melts containing about 10 to the 18th power/cu cm of Cr, Mn, Fe, Ni, Ti, and V, respectively were measured. Deep level spectroscopy of metal-contaminated ingots was employed to determine the level and density of recombination centers due to Ti, V, Ni, and Cr.

Influence of opacifiers on dimensional stability and detail reproduction of maxillofacial silicone elastomer

PubMed Central

2010-01-01

Background We evaluated the influence of chemical disinfection and accelerated aging on the dimensional stability and detail reproduction of a silicone elastomer containing one of two opacifiers. Methods A total of 90 samples were fabricated from Silastic MDX 4-4210 silicone and divided into groups (n = 10) according to opacifier content (barium sulfate or titanium dioxide) and disinfectant solution (neutral soap, Efferdent, or 4% chlorhexidine). The specimens were disinfected 3 times per week during 60 days and then subjected to accelerated aging for 1008 hours. Dimensional stability and detail reproduction tests were performed after specimens' fabrication (baseline), chemical disinfection and periodically during accelerated aging (252, 504, and 1008 hours). The results were analyzed using 3-way repeated-measures ANOVA and the Tukey HSD test (α = 0.05). Results All groups exhibited dimensional changes over time. The opacifier (p = .314), period (p < .0001) and their interactions (p = .0041) affected the dimensional stability of the silicone. Statistical significant dimensional differences occurred between groups with (0.071) and without opacifiers (0.053). Accelerated aging influenced the dimensional stability of the samples. All groups scored 2 in the detail reproduction tests, which represents the fully reproducing of three test grooves with accurate angles. Conclusions Incorporation of opacifiers alters the dimensional stability of silicones used in facial prosthetics, but seems to have no influence on detail reproduction. Accelerated aging is responsible for most of the dimensional changes in Silastic MDX4 4210, but all dimensional changes measured in this study remained within the limits of stability necessary for this application. PMID:21162729

Low-temperature electron cyclotron resonance plasma-enhanced chemical-vapor deposition silicon dioxide as gate insulator for polycrystalline silicon thin-film transistors

DOE Office of Scientific and Technical Information (OSTI.GOV)

Maiolo, L.; Pecora, A.; Fortunato, G.

2006-03-15

Silicon dioxide films have been deposited at temperatures below 270 deg. C in an electron cyclotron resonance (ECR) plasma reactor from O{sub 2}, SiH{sub 4}, and He gas mixture. Pinhole density analysis as a function of substrate temperature for different microwave powers was carried out. Films deposited at higher microwave power and at room temperature show defect densities (<7 pinhole/mm{sup 2}), ensuring low-temperature process integration on large area. From Fourier transform infrared analysis and thermal desorption spectrometry we also evaluated very low hydrogen content if compared to conventional rf-plasma-enhanced chemical-vapor-deposited (PECVD) SiO{sub 2} deposited at 350 deg. C. Electrical propertiesmore » have been measured in metal-oxide-semiconductor (MOS) capacitors, depositing SiO{sub 2} at RT as gate dielectric; breakdown electric fields >10 MV/cm and charge trapping at fields >6 MV/cm have been evaluated. From the study of interface quality in MOS capacitors, we found that even for low annealing temperature (200 deg. C), it is possible to considerably reduce the interface state density down to 5x10{sup 11} cm{sup -2} eV{sup -1}. To fully validate the ECR-PECVD silicon dioxide we fabricated polycrystalline silicon thin-film transistors using RT-deposited SiO{sub 2} as gate insulator. Different postdeposition thermal treatments have been studied and good device characteristics were obtained even for annealing temperature as low as 200 deg. C.« less

Effect of silane/hydrogen ratio on microcrystalline silicon thin films by remote inductively coupled plasma

NASA Astrophysics Data System (ADS)

Guo, Y. N.; Wei, D. Y.; Xiao, S. Q.; Huang, S. Y.; Zhou, H. P.; Xu, S.

2013-05-01

Hydrogenated microcrystalline silicon (μc-Si:H) thin films were prepared by remote low frequency inductively coupled plasma (ICP) chemical vapor deposition system, and the effect of silane/hydrogen ratio on the microstructure and electrical properties of μc-Si:H films was systematically investigated. As silane/hydrogen ratio increases, the crystalline volume fraction Fc decreases and the ratio of the intensity of (220) peak to that of (111) peak drops as silane flow rate is increased. The FTIR result indicates that the μc-Si:H films prepared by remote ICP have a high optical response with a low hydrogen content, which is in favor of reducing light-induced degradation effect. Furthermore, the processing window of the phase transition region for remote ICP is much wider than that for typical ICP. The photosensitivity of μc-Si:H films can exceed 100 at the transition region and this ensures the possibility of the fabrication of microcrystalline silicon thin film solar cells with a open-circuit voltage of about 700 mV.

Pressure-induced transformations of nitrogen implanted into silicon

NASA Astrophysics Data System (ADS)

Akhmetov, V. D.; Misiuk, A.; Barcz, A.; Richter, H.

2006-03-01

Czochralski (CZ) Si samples implanted with nitrogen, with doses 1017 ion/cm2 and 1018 ion/cm2, at 140 keV, were studied by means of Fourier transform infrared spectroscopy after annealing at 1130 °C/5 h under different hydrostatic pressures, from 1 bar to 10.7 kbar. It has been found for each pressure applied, that the increased nitrogen dose leads to transformation of the broadband spectra to the fine structure ones, corresponding to crystalline silicon nitride. The spectral position of observed sharp peaks in the investigated pressure region is red shifted in comparison to that for the peaks of crystalline silicon oxynitride found recently by other investigators in nitrogen-containing poly-Si as well as in a residual melt of nitrogen-doped CZ-Si. The application of the pressure during annealing results in further red shift of the nitrogen-related bands. The observed decrease of frequency of vibrational bands is explained in terms of the pressure induced lowered incorporation of oxygen into growing oxynitride phase. Secondary ion mass spectrometry data reveal the decrease of oxygen content in implanted layer with increasing pressure during annealing.

Mutiple Czochralski growth of silicon crystals from a single crucible

NASA Technical Reports Server (NTRS)

Lane, R. L.; Kachare, A. H.

1980-01-01

An apparatus for the Czochralski growth of silicon crystals is presented which is capable of producing multiple ingots from a single crucible. The growth chamber features a refillable crucible with a water-cooled, vacuum-tight isolation valve located between the pull chamber and the growth furnace tank which allows the melt crucible to always be at vacuum or low argon pressure when retrieving crystal or introducing recharge polysilicon feed stock. The grower can thus be recharged to obtain 100 kg of silicon crystal ingots from one crucible, and may accommodate crucibles up to 35 cm in diameter. Evaluation of the impurity contents and I-V characteristics of solar cells fabricated from seven ingots grown from two crucibles reveals a small but consistent decrease in cell efficiency from 10.4% to 9.6% from the first to the fourth ingot made in a single run, which is explained by impurity build-up in the residual melt. The crystal grower thus may offer economic benefits through the extension of crucible lifetime and the reduction of furnace downtime.