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Sample records for silicon controlled rectifier

  1. Silicon controlled rectifier (SCR) compact modeling based on VBIC and Gummel-Poon models

    NASA Astrophysics Data System (ADS)

    Lou, Lifang; Liou, Juin J.; Dong, Shurong; Han, Yan

    2009-02-01

    Silicon controlled rectifier (SCR) is frequently used for electrostatic discharge (ESD) protection applications. For computer-aided design purposes, a macromodel can be constructed for such a device, but a model for the NPN and PNP bipolar transistors imbedded in the SCR is required in the macromodel development. In the paper, we use both the Vertical Bipolar Inter-Company (VBIC) and SPICE Gummel-Poon (SGP) models for these bipolar transistors and compare the perspective macromodel results. Measurements obtained from the transmission line pulsing (TLP) tester are also included to assess the suitability and pros and cons of the VBIC and SGP models for the SCR ESD modeling.

  2. Understanding of self-terminating pulse generation using silicon controlled rectifier and RC load

    NASA Astrophysics Data System (ADS)

    Chang, Chris; Alves, Fabio; Karunasiri, Gamani

    2016-01-01

    Recently a silicon controlled rectifier (SCR)-based circuit that generates self-terminating voltage pulses was employed for the detection of light and ionizing radiation in pulse mode. The circuit consisted of a SCR connected in series with a RC load and DC bias. In this paper, we report the investigation of the physics underlying the pulsing mechanism of the SCR-based. It was found that during the switching of SCR, the voltage across the capacitor increased beyond that of the DC bias, thus generating a reverse current in the circuit, which helped to turn the SCR off. The pulsing was found to be sustainable only for a specific range of RC values depending on the SCR's intrinsic turn-on/off times. The findings of this work will help to design optimum SCR based circuits for pulse mode detection of light and ionizing radiation without external amplification circuitry.

  3. Structure-dependent behaviors of diode-triggered silicon controlled rectifier under electrostatic discharge stress

    NASA Astrophysics Data System (ADS)

    Zhang, Li-Zhong; Wang, Yuan; He, Yan-Dong

    2016-12-01

    The comprehensive understanding of the structure-dependent electrostatic discharge behaviors in a conventional diode-triggered silicon controlled rectifier (DTSCR) is presented in this paper. Combined with the device simulation, a mathematical model is built to get a more in-depth insight into this phenomenon. The theoretical studies are verified by the transmission-line-pulsing (TLP) test results of the modified DTSCR structure, which is realized in a 65-nm complementary metal-oxide-semiconductor (CMOS) process. The detailed analysis of the physical mechanism is used to provide predictions as the DTSCR-based protection scheme is required. In addition, a method is also presented to achieve the tradeoff between the leakage and trigger voltage in DTSCR. Project supported by the Beijing Municipal Natural Science Foundation, China (Grant No. 4162030) and the National Science and Technology Major Project of China (Grant No. 2013ZX02303002).

  4. Understanding of self-terminating pulse generation using silicon controlled rectifier and RC load

    SciTech Connect

    Chang, Chris Karunasiri, Gamani; Alves, Fabio

    2016-01-15

    Recently a silicon controlled rectifier (SCR)-based circuit that generates self-terminating voltage pulses was employed for the detection of light and ionizing radiation in pulse mode. The circuit consisted of a SCR connected in series with a RC load and DC bias. In this paper, we report the investigation of the physics underlying the pulsing mechanism of the SCR-based. It was found that during the switching of SCR, the voltage across the capacitor increased beyond that of the DC bias, thus generating a reverse current in the circuit, which helped to turn the SCR off. The pulsing was found to be sustainable only for a specific range of RC values depending on the SCR’s intrinsic turn-on/off times. The findings of this work will help to design optimum SCR based circuits for pulse mode detection of light and ionizing radiation without external amplification circuitry.

  5. 500 C SILICON CARBIDE RECTIFIER PROGRAM.

    DTIC Science & Technology

    Efforts were continued on the development of 500 degree C silicon carbide rectifiers. The growth rate of silicon carbide crystals prepared by the...as obtained from a simple model. All values agree within a factor of five. The use of molten borax as an etchant for silicon carbide was studies...is possible. Details are given on the life and storage tests which were successfully passed by two silicon carbide rectifiers. An open tube-flowing

  6. Road load simulator tests of the Gould phase 1 functional model silicon controlled rectifier ac motor controller for electric vehicles

    NASA Technical Reports Server (NTRS)

    Gourash, F.

    1984-01-01

    The test results for a functional model ac motor controller for electric vehicles and a three-phase induction motor which were dynamically tested on the Lewis Research Center road load simulator are presented. Results show that the controller has the capability to meet the SAE-J227a D cycle test schedule and to accelerate a 1576-kg (3456-lb) simulated vehicle to a cruise speed of 88.5 km/hr (55 mph). Combined motor controller efficiency is 72 percent and the power inverter efficiency alone is 89 percent for the cruise region of the D cycle. Steady state test results for motoring, regeneration, and thermal data obtained by operating the simulator as a conventional dynamometer are in agreement with the contractor's previously reported data. The regeneration test results indicate that a reduction in energy requirements for urban driving cycles is attainable with regenerative braking. Test results and data in this report serve as a data base for further development of ac motor controllers and propulsion systems for electric vehicles. The controller uses state-of-the-art silicon controlled rectifier (SCR) power semiconductors and microprocessor-based logic and control circuitry. The controller was developed by Gould Laboratories under a Lewis contract for the Department of Energy's Electric and Hybrid Vehicle program.

  7. Polarization-controlled tunable rectifying behaviors in highly oriented (K,Na)NbO3/LaNiO3 heterostructures on silicon

    NASA Astrophysics Data System (ADS)

    Xu, Hanni; Liu, Yi; Xu, Bo; Xia, Yidong; Wang, Genshui; Yin, Jiang; Liu, Zhiguo

    2016-09-01

    We report polarization-controlled tunable rectifying behaviors in (K,Na)NbO3 (KNN)/LaNiO3 (LNO) heterostructures on silicon. The heterostructure shows a forward diode behavior at both the high resistance state and the low resistance state. The amplitude dependent rectifying features are attributed to the ferroelectric modulation effect on both the width of the depletion region and the height of the potential barrier at the KNN/LNO interface. By controlling the domain configurations using the writing voltage, the rectifying behaviors can be regulated and immediate states can be tuned. Our work shows the potential applications of KNN films in ferroelectric memristors.

  8. High holding voltage segmentation stacking silicon-controlled-rectifier structure with field implant as body ties blocking layer

    NASA Astrophysics Data System (ADS)

    Yen, Shiang-Shiou; Cheng, Chun-Hu; Lan, Yu-Pin; Chiu, Yu-Chien; Fan, Chia-Chi; Hsu, Hsiao-Hsuan; Chang, Shao-Chin; Jiang, Zhe-Wei; Hung, Li-Yue; Tsai, Chi-Chung; Chang, Chun-Yen

    2016-04-01

    High electrostatic discharge (ESD) protection robustness and good transient-induced latchup immunity are two important issues for high voltage integrate circuit application. In this study, we report a high-voltage-n-type-field (HVNF) implantation to act as the body ties blocking layer in segmented topology silicon-controlled-rectifier (SCR) structure in 0.11 µm 32 V high voltage process. This body ties blocking layer eliminate the elevated triggered voltage in segmented technique. Using a large resistance as shunt resistor in resistor assisted triggered SCRs stacking structure, the double snapback phenomenon is eliminate. The series SCR could be decoupled a sufficient voltage drop to turned-on when a very low current flow through the shunt resistor. The holding voltage and the failure current of 22 V and 3.4 A are achieved in the best condition of segmented topology SCR stacking structure, respectively. It improves the latchup immunity at high voltage ICs application. On the other hand, the triggered voltage almost keep the same value which is identical to SCR single cell without using segmented topology.

  9. 500 C SILICON CARBIDE RECTIFIER PROGRAM

    DTIC Science & Technology

    Silicon carbide crystals of the hexagonal type were grown in a Kroll-type furnace by the sublimation technique. Both homogeneous and grown junction...feasibility of vapor-phase chemical reaction methods was investigated for the controlled growth of silicon carbide platelets and sheets. The growth of

  10. Silicon Carbide High-Temperature Power Rectifiers Fabricated and Characterized

    NASA Technical Reports Server (NTRS)

    1996-01-01

    The High Temperature Integrated Electronics and Sensors (HTIES) team at the NASA Lewis Research Center is developing silicon carbide (SiC) for use in harsh conditions where silicon, the semiconductor used in nearly all of today's electronics, cannot function. Silicon carbide's demonstrated ability to function under extreme high-temperature, high power, and/or high-radiation conditions will enable significant improvements to a far ranging variety of applications and systems. These improvements range from improved high-voltage switching for energy savings in public electric power distribution and electric vehicles, to more powerful microwave electronics for radar and cellular communications, to sensors and controls for cleaner-burning, more fuel-efficient jet aircraft and automobile engines. In the case of jet engines, uncooled operation of 300 to 600 C SiC power actuator electronics mounted in key high-temperature areas would greatly enhance system performance and reliability. Because silicon cannot function at these elevated temperatures, the semiconductor device circuit components must be made of SiC. Lewis' HTIES group recently fabricated and characterized high-temperature SiC rectifier diodes whose record-breaking characteristics represent significant progress toward the realization of advanced high-temperature actuator control circuits. The first figure illustrates the 600 C probe-testing of a Lewis SiC pn-junction rectifier diode sitting on top of a glowing red-hot heating element. The second figure shows the current-versus voltage rectifying characteristics recorded at 600 C. At this high temperature, the diodes were able to "turn-on" to conduct 4 A of current when forward biased, and yet block the flow of current ($quot;turn-off") when reverse biases as high as 150 V were applied. This device represents a new record for semiconductor device operation, in that no previous semiconductor electronic device has ever simultaneously demonstrated 600 C functionality

  11. Apparatus for controlling the firing of rectifiers in polyphase rectifying circuits

    DOEpatents

    Yarema, R.J.

    1979-09-18

    A polyphase rectifier is controlled with precision by a circuit that filters and shifts a reference signal associated with each phase and that starts a ramp signal at a zero crossing of the shifted reference signal. The difference between the ramp signal and an external trigger signal is used to generate a pulse that switches power rectifiers into conduction. The circuit reduces effects of variations that introduce subharmonics into a rectified signal and it can be used for constant or time-varying external trigger signals.

  12. High Temperature Rectifiers and MOS Devices in 6H-Silicon Carbide

    DTIC Science & Technology

    1992-04-27

    silicon carbide which is the premiere semiconductor material for high temperature (and other) applications. One device is a high voltage, low current rectifier which can operate to at least 350 deg C for use in an igniter circuit. The developments required involved decreasing the doping level of the

  13. Gate-controlled rectifying behavior in C70@SWNT networks.

    PubMed

    Guo, Ao; Fu, Yunyi; Liu, Jia; Guan, Lunhui; Shi, Zujin; Gu, Zhennan; Huang, Ru; Zhang, Xing

    2006-05-25

    We report the gate-controlled rectification behavior in C(70)@SWNT networks at room temperature in air. The electrical transport characteristics can be fitted well with the conventional Schottky diode model. The origin of the rectifying behavior in fullerene peapod networks device is qualitatively discussed. This paper demonstrates a strategy for diode fabrication based on peapod networks.

  14. Improved control configuration of PWM rectifiers based on neuro-fuzzy controller.

    PubMed

    Acikgoz, Hakan; Kececioglu, O Fatih; Gani, Ahmet; Yildiz, Ceyhun; Sekkeli, Mustafa

    2016-01-01

    It is well-known that rectifiers are used widely in many applications required AC/DC transformation. With technological advances, many studies are performed for AC/DC converters and many control methods are proposed in order to improve the performance of these rectifiers in recent years. Pulse width modulation (PWM) based rectifiers are one of the most popular rectifier types. PWM rectifiers have lower input current harmonics and higher power factor compared to classical diode and thyristor rectifiers. In this study, neuro-fuzzy controller (NFC) which has robust, nonlinear structure and do not require the mathematical model of the system to be controlled has been proposed for PWM rectifiers. Three NFCs are used in control scheme of proposed PWM rectifier in order to control the dq-axis currents and DC voltage of PWM rectifier. Moreover, simulation studies are carried out to demonstrate the performance of the proposed control scheme at MATLAB/Simulink environment in terms of rise time, settling time, overshoot, power factor, total harmonic distortion and power quality.

  15. Fast controller for a unity-power-factor PWM rectifier

    SciTech Connect

    Eissa, M.O.; Leeb, S.B.; Verghese, G.C.; Stankovic, A.M.

    1996-01-01

    This paper presents an analog implementation of a fast controller for a unity-power-factor (UPF) PWM rectifier. The best settling times of many popular controllers for this type of converter are on the order of a few line cycles, corresponding to bandwidths under 20 Hz. The fast controller demonstrated in this paper can exercise control action at a rate comparable to the switching frequency rather than the line frequency. In order to accomplish this while maintaining unity power factor during steady-state operation, the fast controller employs a ripple-feedback cancellation scheme.

  16. Temperature-gated thermal rectifier for active heat flow control.

    PubMed

    Zhu, Jia; Hippalgaonkar, Kedar; Shen, Sheng; Wang, Kevin; Abate, Yohannes; Lee, Sangwook; Wu, Junqiao; Yin, Xiaobo; Majumdar, Arun; Zhang, Xiang

    2014-08-13

    Active heat flow control is essential for broad applications of heating, cooling, and energy conversion. Like electronic devices developed for the control of electric power, it is very desirable to develop advanced all-thermal solid-state devices that actively control heat flow without consuming other forms of energy. Here we demonstrate temperature-gated thermal rectification using vanadium dioxide beams in which the environmental temperature actively modulates asymmetric heat flow. In this three terminal device, there are two switchable states, which can be regulated by global heating. In the "Rectifier" state, we observe up to 28% thermal rectification. In the "Resistor" state, the thermal rectification is significantly suppressed (<1%). To the best of our knowledge, this is the first demonstration of solid-state active-thermal devices with a large rectification in the Rectifier state. This temperature-gated rectifier can have substantial implications ranging from autonomous thermal management of heating and cooling systems to efficient thermal energy conversion and storage.

  17. Inward Rectifier Potassium Channels Control Rotor Frequency in Ventricular Fibrillation

    PubMed Central

    Jalife, José

    2009-01-01

    Summary Ventricular fibrillation (VF) is the most important cause of sudden cardiac death. While traditionally thought to result from random activation of the ventricles by multiple independent wavelets, recent evidence suggests that VF may be determined by the sustained activation of a relatively small number of reentrant sources. In addition, recent experimental data in various species as well as computer simulations have provided important clues about its ionic and molecular mechanisms, particularly in regards to the role of potassium currents in such mechanisms. The results strongly argue that the inward rectifier current, Ik1, is an important current during functional reentry because it mediates the electrotonic interactions between the unexcited core and its immediate surroundings. In addition, IK1 is a stabilizer of reentry due to its ability to shorten action potential duration and reducing conduction velocity near the center of rotation. Increased I K1 prevents wavefront-wavetail interactions and thus averts rotor destabilization and breakup. Other studies have shown that while the slow component of the delayed rectifier potassium current, IKs, does not significantly modify rotor frequency or stability, it plays a major role in post-repolarization refractoriness and wavebreak formation. Therefore, the interplay between IK1 and the rapid sodium inward current (INa) is a major factor in the control of cardiac excitability and therefore the stability and frequency of reentry while IKs is an important determinant of fibrillatory conduction. PMID:19880073

  18. Using 12 MeV electron beams to develop silicon P +NN + high frequency rectifying diodes

    NASA Astrophysics Data System (ADS)

    Desheng, Hang; Qiji, Lai; Yi, Shi; Zheng, Zheng

    2000-12-01

    Twelve MeV electron beams were used to irradiate common P +NN + diodes (1 A and 1 kV) in order to transfer them into high frequency rectifying ones. Some interesting results have been obtained. It seems that this method is superior to the traditional gold-doping technique in controlling precisely the lives of the minority carriers. Compared with the later electron beam irradiation made the reverse recovery time ( trr) and FWD-voltage ( VF) of the diodes better consistent and repeatable. The high temperature performance was also obviously improved. The qualified rate of diodes was enhanced by more than 30%.

  19. A Novel Phase-Shift Control of Semibridgeless Active Rectifier for Wireless Power Transfer

    DOE PAGES

    Colak, Kerim; Asa, Erdem; Bojarski, Mariusz; ...

    2015-05-12

    We investigated a novel phase-shift control of a semibridgeless active rectifier (S-BAR) in order to utilize the S-BAR in wireless energy transfer applications. The standard receiver-side rectifier topology is developed by replacing rectifier lower diodes with synchronous switches controlled by a phase-shifted PWM signal. Moreover, theoretical and simulation results showthat with the proposed control technique, the output quantities can be regulated without communication between the receiver and transmitter. In order to confirm the performance of the proposed converter and control, experimental results are provided using 8-, 15-, and 23-cm air gap coreless transformer which has dimension of 76 cm xmore » 76 cm, with 120-V input and the output power range of 0 to 1kW with a maximum efficiency of 94.4%.« less

  20. A Novel Phase-Shift Control of Semibridgeless Active Rectifier for Wireless Power Transfer

    SciTech Connect

    Colak, Kerim; Asa, Erdem; Bojarski, Mariusz; Czarkowski, Dariusz; Onar, Omer C.

    2015-05-12

    We investigated a novel phase-shift control of a semibridgeless active rectifier (S-BAR) in order to utilize the S-BAR in wireless energy transfer applications. The standard receiver-side rectifier topology is developed by replacing rectifier lower diodes with synchronous switches controlled by a phase-shifted PWM signal. Moreover, theoretical and simulation results showthat with the proposed control technique, the output quantities can be regulated without communication between the receiver and transmitter. In order to confirm the performance of the proposed converter and control, experimental results are provided using 8-, 15-, and 23-cm air gap coreless transformer which has dimension of 76 cm x 76 cm, with 120-V input and the output power range of 0 to 1kW with a maximum efficiency of 94.4%.

  1. WASTE MINIMIZATION ASSESSMENT FOR A MANUFACTURER OF SILICON-CONTROLLED RECTIFIERS AND SCHOTTKY RECTIFIERS

    EPA Science Inventory

    The U.S. Environmental Protection Agency (EPA) has funded a pilot project to assist small- and medium-size manufacturers who want to minimize their generation of waste but who lack the expertise to do so. In an effort to assist these manufacturers Waste Minimization Assessment Ce...

  2. Nanoscale spin rectifiers controlled by the Stark effect

    NASA Astrophysics Data System (ADS)

    Rossella, Francesco; Bertoni, Andrea; Ercolani, Daniele; Rontani, Massimo; Sorba, Lucia; Beltram, Fabio; Roddaro, Stefano

    2014-12-01

    The control of orbitals and spin states of single electrons is a key ingredient for quantum information processing and novel detection schemes and is, more generally, of great relevance for spintronics. Coulomb and spin blockade in double quantum dots enable advanced single-spin operations that would be available even for room-temperature applications with sufficiently small devices. To date, however, spin operations in double quantum dots have typically been observed at sub-kelvin temperatures, a key reason being that it is very challenging to scale a double quantum dot system while retaining independent field-effect control of individual dots. Here, we show that the quantum-confined Stark effect allows two dots only 5 nm apart to be independently addressed without the requirement for aligned nanometre-sized local gating. We thus demonstrate a scalable method to fully control a double quantum dot device, regardless of its physical size. In the present implementation we present InAs/InP nanowire double quantum dots that display an experimentally detectable spin blockade up to 10 K. We also report and discuss an unexpected re-entrant spin blockade lifting as a function of the magnetic field intensity.

  3. A superconducting reversible rectifier that controls the motion of magnetic flux quanta.

    PubMed

    Villegas, J E; Savel'ev, Sergey; Nori, Franco; Gonzalez, E M; Anguita, J V; García, R; Vicent, J L

    2003-11-14

    We fabricated a device that controls the motion of flux quanta in a niobium superconducting film grown on an array of nanoscale triangular pinning potentials. The controllable rectification of the vortex motion is due to the asymmetry of the fabricated magnetic pinning centers. The reversal in the direction of the vortex flow is explained by the interaction between the vortices trapped on the magnetic nanostructures and the interstitial vortices. The applied magnetic field and input current strength can tune both the polarity and magnitude of the rectified vortex flow. Our ratchet system is explained and modeled theoretically, taking the interactions between particles into consideration.

  4. Structural basis of control of inward rectifier Kir2 channel gating by bulk anionic phospholipids

    PubMed Central

    Lee, Sun-Joo; Ren, Feifei; Zangerl-Plessl, Eva-Maria; Heyman, Sarah; Yuan, Peng

    2016-01-01

    Inward rectifier potassium (Kir) channel activity is controlled by plasma membrane lipids. Phosphatidylinositol-4,5-bisphosphate (PIP2) binding to a primary site is required for opening of classic inward rectifier Kir2.1 and Kir2.2 channels, but interaction of bulk anionic phospholipid (PL−) with a distinct second site is required for high PIP2 sensitivity. Here we show that introduction of a lipid-partitioning tryptophan at the second site (K62W) generates high PIP2 sensitivity, even in the absence of PL−. Furthermore, high-resolution x-ray crystal structures of Kir2.2[K62W], with or without added PIP2 (2.8- and 2.0-Å resolution, respectively), reveal tight tethering of the C-terminal domain (CTD) to the transmembrane domain (TMD) in each condition. Our results suggest a refined model for phospholipid gating in which PL− binding at the second site pulls the CTD toward the membrane, inducing the formation of the high-affinity primary PIP2 site and explaining the positive allostery between PL− binding and PIP2 sensitivity. PMID:27527100

  5. Real-time multi-DSP control of three-phase current-source unity power factor PWM rectifier

    SciTech Connect

    Xiao Wang; Boon-Teck Ooi . Dept. of Electrical Engineering)

    1993-07-01

    The design of a real-time multi-DSP controller for a high-quality six-valve three-phase current-source unity power factor PWM rectifier is discussed in this paper. With the decoupler preprocessor and the dynamic trilogic PWM trigger scheme, each of the three input currents can be controlled independently. Based on the a-b-c frame system model and the fast parallel computer control, the pole-placement control method is implemented successfully to achieve fast response in the ac currents. The low-frequency resonance in the ac filter L-C networks has been damped effectively. The experimental results are obtained from a 1-kVA bipolar transistor current-source PWM rectifier with a real-time controller using three TMS320C25 DSP's.

  6. Co-Design Method and Wafer-Level Packaging Technique of Thin-Film Flexible Antenna and Silicon CMOS Rectifier Chips for Wireless-Powered Neural Interface Systems.

    PubMed

    Okabe, Kenji; Jeewan, Horagodage Prabhath; Yamagiwa, Shota; Kawano, Takeshi; Ishida, Makoto; Akita, Ippei

    2015-12-16

    In this paper, a co-design method and a wafer-level packaging technique of a flexible antenna and a CMOS rectifier chip for use in a small-sized implantable system on the brain surface are proposed. The proposed co-design method optimizes the system architecture, and can help avoid the use of external matching components, resulting in the realization of a small-size system. In addition, the technique employed to assemble a silicon large-scale integration (LSI) chip on the very thin parylene film (5 μm) enables the integration of the rectifier circuits and the flexible antenna (rectenna). In the demonstration of wireless power transmission (WPT), the fabricated flexible rectenna achieved a maximum efficiency of 0.497% with a distance of 3 cm between antennas. In addition, WPT with radio waves allows a misalignment of 185% against antenna size, implying that the misalignment has a less effect on the WPT characteristics compared with electromagnetic induction.

  7. Adrenergic control of the ultrarapid delayed rectifier current in canine atrial myocytes.

    PubMed

    Yue, L; Feng, J; Wang, Z; Nattel, S

    1999-04-15

    1. The effects of adrenergic stimulation on the ultrarapid delayed rectifier K+ current (IKur,d) of dog atrial myocytes was studied with patch-clamp methods. 2. Isoproterenol (isoprenaline) increased IKur,d in a concentration-dependent fashion with an EC50 of 7.3 +/- 0.8 nM. The effect of isoproterenol was blocked by propranolol, mimicked by forskolin and 8-bromo-cAMP, and prevented by inhibition of protein kinase A. 3. Phenylephrine (in the presence of propranolol) increased IKur,d with an EC50 of 0.49 +/- 0.06 microM. The effect of phenylephrine was blocked by prazosin, prevented by inhibition of protein kinase C, and mimicked by activation of protein kinase C with phorbol ester. 4. Phenylephrine significantly abbreviated canine atrial action potential duration in the absence of tetraethylammonium (TEA). When TEA was present under both control conditions and in the presence of phenylephrine, phenylephrine failed to alter canine atrial repolarization. 5. We conclude that beta- and alpha-adrenergic stimulation increase IKur,d via protein kinase A and C, respectively, and that the induced changes in IKur,d may play a role in adrenergic control of canine atrial repolarization.

  8. Vascular Inward Rectifier K+ Channels as External K+ Sensors in the Control of Cerebral Blood Flow

    PubMed Central

    LONGDEN, THOMAS A.; NELSON, MARK T.

    2015-01-01

    For decades it has been known that external potassium (K+) ions are rapid and potent vasodilators that increase cerebral blood flow (CBF). Recent studies have implicated the local release of K+ from astrocytic endfeet—which encase the entirety of the parenchymal vasculature—in the dynamic regulation of local CBF during neurovascular coupling (NVC). It has been proposed that the activation of strong inward rectifier K+ (KIR) channels in the vascular wall by external K+ is a central component of these hyperemic responses; however, a number of significant gaps in our knowledge remain. Here, we explore the concept that vascular KIR channels are the major extracellular K+ sensors in the control of CBF. We propose that K+ is an ideal mediator of NVC, and discuss KIR channels as effectors that produce rapid hyperpolarization and robust vasodilation of cerebral arterioles. We provide evidence that KIR channels, of the KIR2 subtype in particular, are present in both the endothelial and smooth muscle cells of parenchymal arterioles and propose that this dual positioning of KIR2 channels increases the robustness of the vasodilation to external K+, enables the endothelium to be actively engaged in neurovascular coupling, and permits electrical signaling through the endothelial syncytium to promote upstream vasodilation to modulate CBF. PMID:25641345

  9. Protein assemblies of sodium and inward rectifier potassium channels control cardiac excitability and arrhythmogenesis

    PubMed Central

    Willis, B. Cicero; Ponce-Balbuena, Daniela

    2015-01-01

    The understanding of how cardiac ion channels function in the normal and the diseased heart has greatly increased over the last four decades thanks to the advent of patch-clamp technology and, more recently, the emergence of genetics, as well as cellular and molecular cardiology. However, our knowledge of how these membrane-embedded proteins physically interact with each other within macromolecular complexes remains incomplete. This review focuses on how the main cardiac inward sodium channel (NaV1.5) and the strong inward rectifier potassium channel (Kir2.1) function within macromolecular complexes to control cardiac excitability. It has become increasingly clear that these two important ion channel proteins physically interact with multiple other protein partners and with each other from early stages of protein trafficking and targeting through membrane anchoring, recycling, and degradation. Recent findings include compartmentalized regulation of NaV1.5 channel expression and function through a PDZ (postsynaptic density protein, Drosophila disc large tumor suppressor, and zonula occludens-1 protein) domain-binding motif, and interaction of caveolin-3 with Kir2.1 and ankyrin-G as a molecular platform for NaV1.5 signaling. At the cardiomyocyte membrane, NaV1.5 and Kir2.1 interact through at least two distinct PDZ domain-scaffolding proteins (synapse-associated protein-97 and α1-syntrophin), thus modulating reciprocally their cell-surface expression at two different microdomains. Emerging evidence also shows that inheritable mutations in plakophilin-2, ankyrin-G, dystrophin, syntrophin, synapse-associated protein-97, and caveolin-3, among others, modify functional expression and/or localization in the cardiac cell of NaV1.5, Kir2.1 or both to give rise to arrhythmogenic diseases. Unveiling the mechanistic underpinnings of macromolecular interactions should increase our understanding of inherited and acquired arrhythmogenic cardiac diseases and may lead to advances

  10. Protein assemblies of sodium and inward rectifier potassium channels control cardiac excitability and arrhythmogenesis.

    PubMed

    Willis, B Cicero; Ponce-Balbuena, Daniela; Jalife, José

    2015-06-15

    The understanding of how cardiac ion channels function in the normal and the diseased heart has greatly increased over the last four decades thanks to the advent of patch-clamp technology and, more recently, the emergence of genetics, as well as cellular and molecular cardiology. However, our knowledge of how these membrane-embedded proteins physically interact with each other within macromolecular complexes remains incomplete. This review focuses on how the main cardiac inward sodium channel (NaV1.5) and the strong inward rectifier potassium channel (Kir2.1) function within macromolecular complexes to control cardiac excitability. It has become increasingly clear that these two important ion channel proteins physically interact with multiple other protein partners and with each other from early stages of protein trafficking and targeting through membrane anchoring, recycling, and degradation. Recent findings include compartmentalized regulation of NaV1.5 channel expression and function through a PDZ (postsynaptic density protein, Drosophila disc large tumor suppressor, and zonula occludens-1 protein) domain-binding motif, and interaction of caveolin-3 with Kir2.1 and ankyrin-G as a molecular platform for NaV1.5 signaling. At the cardiomyocyte membrane, NaV1.5 and Kir2.1 interact through at least two distinct PDZ domain-scaffolding proteins (synapse-associated protein-97 and α1-syntrophin), thus modulating reciprocally their cell-surface expression at two different microdomains. Emerging evidence also shows that inheritable mutations in plakophilin-2, ankyrin-G, dystrophin, syntrophin, synapse-associated protein-97, and caveolin-3, among others, modify functional expression and/or localization in the cardiac cell of NaV1.5, Kir2.1 or both to give rise to arrhythmogenic diseases. Unveiling the mechanistic underpinnings of macromolecular interactions should increase our understanding of inherited and acquired arrhythmogenic cardiac diseases and may lead to advances

  11. Rectifier cabinet static breaker

    DOEpatents

    Costantino, Jr, Roger A.; Gliebe, Ronald J.

    1992-09-01

    A rectifier cabinet static breaker replaces a blocking diode pair with an SCR and the installation of a power transistor in parallel with the latch contactor to commutate the SCR to the off state. The SCR serves as a static breaker with fast turnoff capability providing an alternative way of achieving reactor scram in addition to performing the function of the replaced blocking diodes. The control circuitry for the rectifier cabinet static breaker includes on-line test capability and an LED indicator light to denote successful test completion. Current limit circuitry provides high-speed protection in the event of overload.

  12. Passive and Hybrid PFC Rectifiers

    NASA Astrophysics Data System (ADS)

    Nishida, Yasuyuki

    The diode rectifier offers several desirable features such as a unity displacement-factor and a high efficiency with low complexity and high reliability, but the utility line-current is significantly distorted. The traditional multi-pulse (e.g., 12-pulse, 18-pulse and so on) PAM concept by means of multiple rectifier units and phase-shifting isolation-transformers is a well-known scheme to improve the input line-current waveform and reduce dc-current/voltage ripple. Though, the necessity of the isolation-transformer is a great weak point especially for applications in low to medium power range. To mitigate the problem, several investigations have been done. The PWM rectifier is a modern and effective alternative, although it results in a higher initial cost, lower efficiency and EMI noise problems due to high frequency switching. To solve the problem, we have two alternatives without PWM and are so called “Passive” schemes. One is the multi-pulse/multi-phase scheme without the isolation transformer but with an autotransformer. This scheme results in a simplified multi-pulse PAM rectifier. The other is the Third-Harmonic-Current Injection and the expanded schemes. Although these two schemes have been studied independently in most cases, new types of diode PFC rectifier obtained by combining the two schemes have been studied recently. Additionally, further new topologies, so called “Hybrid” type, have been proposed very recently. The rectifiers with the new concept consist of an autotransformer-connected double 3-phase bridge 12-pulse rectifier and a PWM dc-dc converter on the dc-side to perform the current injection. The Hybrid rectifiers offer output voltage controllability and sinusoidal input currents similarly to the PWM rectifiers. To show the current trends and remaining possibilities of the Passive and Hybrid rectifiers, this paper gives a survey and historical review of the rectifiers. Then, some new topologies in the category are investigated

  13. Controlled Adhesion of Silicone Elastomer Surfaces

    NASA Astrophysics Data System (ADS)

    Owen, Michael

    2000-03-01

    Opportunities exist for controllably enhancing the adhesion of silicone surfaces, ranging from modest enhancement of release force levels of pressure-sensitive adhesive (PSA) release liners by incorporation of adhesion promoters known as high release additives (HRA), to permanent bonding of silicone elastomers using surface modification techniques such as plasma or corona treatment. Although only a part of the complex interaction of factors contributing to adhesion, surface properties such as wettability are a critical component in the understanding and control of release and adhesion phenomena. Surface characterization studies of low-surface-energy silicones before and after various adhesion modification strategies are reviewed. The silicones include polydimethylsiloxane (PDMS) and fluorosiloxane elastomers and coatings. Techniques used include contact angle, the Johnson, Kendall and Roberts (JKR) contact mechanics approach, scanning electron microscopy (SEM), atomic force microscopy (AFM), and x-ray photoelectron spectroscopy (XPS). Topics addressed are: use of HRA in PDMS release liners, the interaction of PDMS PSAs with polytetrafluoroethylene (PTFE), and the effect of plasma treatment on PDMS and fluorosiloxane surfaces.

  14. Silicon-controlled-rectifier square-wave inverter with protection against commutation failure

    NASA Technical Reports Server (NTRS)

    Birchenough, A. G.

    1971-01-01

    The square-wave SCR inverter that was designed, built, and tested includes a circuit to turn off the inverter in case of commutation failure. The basic power stage is a complementary impulse-commutated parallel inverter consisting of only six components. The 400-watt breadboard was tested while operating at + or - 28 volts, and it had a peak efficiency of 95.5 percent at 60 hertz and 91.7 percent at 400 hertz. The voltage regulation for a fixed input was 3 percent at 60 hertz. An analysis of the operation and design information is included.

  15. Silicon controlled rectifier polyphase bridge inverter commutated with gate-turn-off thyristor

    NASA Technical Reports Server (NTRS)

    Edwards, Dean B. (Inventor); Rippel, Wally E. (Inventor)

    1986-01-01

    A polyphase SCR inverter (10) having N switching poles, each comprised of two SCR switches (1A, 1B; 2A, 2B . . . NA, NB) and two diodes (D1B; D1B; D2A, D2B . . . DNA, DNB) in series opposition with saturable reactors (L1A, L1B; L2A, L2B . . . LNA, LNB) connecting the junctions between the SCR switches and diodes to an output terminal (1, 2 . . . 3) is commutated with only one GTO thyristor (16) connected between the common negative terminal of a dc source and a tap of a series inductor (14) connected to the positive terminal of the dc source. A clamp winding (22) and diode (24) are provided, as is a snubber (18) which may have its capacitance (c) sized for maximum load current divided into a plurality of capacitors (C.sub.1, C.sub.2 . . . C.sub.N), each in series with an SCR switch S.sub.1, S.sub.2 . . . S.sub.N). The total capacitance may be selected by activating selected switches as a function of load current. A resistor 28 and SCR switch 26 shunt reverse current when the load acts as a generator, such as a motor while braking.

  16. Control of silicon nanoparticle size embedded in silicon oxynitride dielectric matrix

    SciTech Connect

    Ehrhardt, F.; Ferblantier, G.; Muller, D.; Slaoui, A.; Ulhaq-Bouillet, C.; Rinnert, H.

    2013-07-21

    In this study, silicon rich silicon oxynitride layers containing more than 15% nitrogen were deposited by electron cyclotron resonance assisted plasma enhanced vapor deposition in order to form silicon nanoparticles after a high temperature thermal annealing. The effect of the flows of the precursor gases on the composition and the structural properties of the layers was assessed by Rutherford backscattering spectroscopy, elastic recoil detection analysis, and infrared spectroscopic measurements. The morphological and crystallinity properties were investigated by energy filtered transmission electron microscopy and Raman spectroscopy. We show that the excess of silicon in the silicon oxynitride layer controls the silicon nanoparticles size. On the other hand, the crystalline fraction of particles is found to be strongly correlated to the nanoparticle size. Finally, the photoluminescence measurements show that it is also possible to tune the photoluminescence peak position between 400 and 800 nm and its intensity by changing the silicon excess in the silicon rich silicon oxynitride matrix.

  17. Magnetically controllable silicon microring with ferrofluid cladding.

    PubMed

    El Amili, A; Souza, M C M M; Vallini, F; Frateschi, N C; Fainman, Y

    2016-12-01

    We experimentally investigate the application of magnetic fluids (MFs) on integrated silicon photonics. Using a ferrofluid-clad silicon microring resonator, we demonstrate active control of resonances by applying an external magnetic field. Relatively high loaded quality factors on the order of 6000 are achieved, despite the optical losses introduced by the magnetic nanoparticles. We demonstrate resonance shifts of 185 pm in response to a 110 Oe strong magnetic field, corresponding to an overall refractive index change of -3.2×10-3 for the cladding MF. The combination of MFs and integrated photonics could potentially lead to the development of magnetically controllable optical devices and ultra-compact cost-effective magnetic field sensors.

  18. Silicon Sheet Quality is Improved By Meniscus Control

    NASA Technical Reports Server (NTRS)

    Yates, D. A.; Hatch, A. E.; Goldsmith, J. M.

    1983-01-01

    Better quality silicon crystals for solar cells are possible with instrument that monitors position of meniscus as sheet of solid silicon is drawn from melt. Using information on meniscus height, instrument generates feedback signal to control melt temperature. Automatic control ensures more uniform silicon sheets.

  19. Curvature Control of Silicon Microlens for THz Dielectric Antenna

    NASA Technical Reports Server (NTRS)

    Lee, Choonsup; Chattopadhyay, Goutam; Cooper, Ken; Mehdi, Imran

    2012-01-01

    We have controlled the curvature of silicon microlens by changing the amount of photoresist in order to microfabricate hemispherical silicon microlens which can improve the directivity and reduce substrate mode losses.

  20. Control of Selective Ion Transfer across Liquid–Liquid Interfaces: A Rectifying Heterojunction Based on Immiscible Electrolytes

    PubMed Central

    2016-01-01

    The current rectification displayed by solid-state p–n semiconductor diodes relies on the abundance of electrons and holes near the interface between the p–n junction. In analogy to this electronic device, we propose here the construction of a purely ionic liquid-state electric rectifying heterojunction displaying an excess of monovalent cations and anions near the interface between two immiscible solvents with different dielectric properties. This system does not need any physical membrane or material barrier to show preferential ion transfer but relies on the ionic solvation energy between the two immiscible solvents. We construct a simple device, based on an oil/water interface, displaying an asymmetric behavior of the electric current as a function of the polarity of an applied electric field. This device also exhibits a region of negative differential conductivity, analogous to that observed in brain and heart cells via voltage clamp techniques. Computer simulations and mean field theory calculations for a model of this system show that the application of an external electric field is able to control the bulk concentrations of the ionic species in the immiscible liquids in a manner that is asymmetric with respect to the polarity or direction of the applied electric field. These properties make possible to enhance or suppress selective ion transport at liquid−liquid interfaces with the application of an external electric field or electrostatic potential, mimicking the function of biological ion channels, thus creating opportunities for varied applications. PMID:27924315

  1. Comparative Analyses of Multi-Pulse Phase Controlled Rectifiers in Continuous Conduction Mode with a Two-Pole LC Output Filter for Surface Ship DC Applications

    DTIC Science & Technology

    2013-03-01

    and reconfigurable power system capable of supplying power not only to large high power propulsion loads but to growing combat system loads like high...power radar and pulse loads such as rail guns and free-electron lasers. A critical component in such a system is the phase controlled rectifier. As...reconfigurable power system capable of supplying power not only to large high power propulsion loads but to growing combat system loads like high

  2. Oxide Control for Silicon Crystal Growth

    NASA Technical Reports Server (NTRS)

    Wehrli, H. A. I.

    1982-01-01

    Web dendrite growth process pulls sheet of newly crystallized silicon from molten silicon. Jets of argon pull outside gas into melt cavity, preventing silicon oxide from passing through heat-shield hold and depositing on it. Generated by aspirators, reversed flow is used in web dendrite process, which produces sheets of single-crystal silicon for low-cost solar cells.

  3. Noise Properties of Rectifying Nanopore

    SciTech Connect

    Vlassiouk, Ivan V

    2011-01-01

    Ion currents through three types of rectifying nanoporous structures are studied and compared: conically shaped polymer nanopores, glass nanopipettes, and silicon nitride nanopores. Time signals of ion currents are analyzed by the power spectrum. We focus on the low-frequency range where the power spectrum magnitude scales with frequency, f, as 1/f. Glass nanopipettes and polymer nanopores exhibit nonequilibrium 1/f noise; thus, the normalized power spectrum depends on the voltage polarity and magnitude. In contrast, 1/f noise in rectifying silicon nitride nanopores is of equilibrium character. Various mechanisms underlying the voltage-dependent 1/f noise are explored and discussed, including intrinsic pore wall dynamics and formation of vortices and nonlinear flow patterns in the pore. Experimental data are supported by modeling of ion currents based on the coupled Poisson-Nernst-Planck and Navier-Stokes equations. We conclude that the voltage-dependent 1/f noise observed in polymer and glass asymmetric nanopores might result from high and asymmetric electric fields, inducing secondary effects in the pore, such as enhanced water dissociation.

  4. Noise Properties of Rectifying Nanopores

    SciTech Connect

    Powell, M R; Sa, N; Davenport, M; Healy, K; Vlassiouk, I; Letant, S E; Baker, L A; Siwy, Z S

    2011-02-18

    Ion currents through three types of rectifying nanoporous structures are studied and compared for the first time: conically shaped polymer nanopores, glass nanopipettes, and silicon nitride nanopores. Time signals of ion currents are analyzed by power spectrum. We focus on the low-frequency range where the power spectrum magnitude scales with frequency, f, as 1/f. Glass nanopipettes and polymer nanopores exhibit non-equilibrium 1/f noise, thus the normalized power spectrum depends on the voltage polarity and magnitude. In contrast, 1/f noise in rectifying silicon nitride nanopores is of equilibrium character. Various mechanisms underlying the voltage-dependent 1/f noise are explored and discussed, including intrinsic pore wall dynamics, and formation of vortices and non-linear flow patterns in the pore. Experimental data are supported by modeling of ion currents based on the coupled Poisson-Nernst-Planck and Navier Stokes equations. We conclude that the voltage-dependent 1/f noise observed in polymer and glass asymmetric nanopores might result from high and asymmetric electric fields inducing secondary effects in the pore such as enhanced water dissociation.

  5. K+ channels of stomatal guard cells. Characteristics of the inward rectifier and its control by pH

    PubMed Central

    1992-01-01

    Intracellular microelectrode recordings and a two-electrode voltage clamp have been used to characterize the current carried by inward rectifying K+ channels of stomatal guard cells from the broadbean, Vicia faba L. Superficially, the current displayed many features common to inward rectifiers of neuromuscular and egg cell membranes. In millimolar external K+ concentrations (Ko+), it activated on hyperpolarization with half-times of 100-200 ms, showed no evidence of time- or voltage-dependent inactivation, and deactivated rapidly (tau approximately 10 ms) on clamping to 0 mV. Steady-state conductance- voltage characteristics indicated an apparent gating charge of 1.3-1.6. Current reversal showed a Nernstian dependence on Ko+ over the range 3- 30 mM, and the inward rectifier was found to be highly selective for K+ over other monovalent cations (K+ greater than Rb+ greater than Cs+ much greater than Na+). Unlike the inward rectifiers of animal membranes, the current was blocked by charybdotoxin and alpha- dendrotoxin (Kd much less than 50 nM), as well as by tetraethylammonium chloride (K1/2 = 9.1 mM); gating of the guard cell K+ current was fixed to voltages near -120 mV, independent of Ko+, and the current activated only with supramillimolar K+ outside (EK+ greater than -120 mV). Most striking, however, was inward rectifier sensitivity to [H+] with the K+ current activated reversibly by mild acid external pH. Current through the K+ inward rectifier was found to be largely independent of intracellular pH and the current reversal (equilibrium) potential was unaffected by pHo from 7.4 to 5.5. By contrast, current through the K+ outward rectifier previously characterized in these cells (1988. J. Membr. Biol. 102:235) was largely insensitive to pHo, but was blocked reversibly by acid-going intracellular pH. The action of pHo on the K+ inward rectifier could not be mimicked by extracellular Ca2+ for which changes in activation, deactivation, and conductance were consonant

  6. Solid state circuit controls direction, speed, and braking of dc motor

    NASA Technical Reports Server (NTRS)

    Hanna, M. F.

    1966-01-01

    Full-wave bridge rectifier circuit controls the direction, speed, and braking of a dc motor. Gating in the circuit of Silicon Controlled Rectifiers /SCRS/ controls output polarity and braking is provided by an SCR that is gated to short circuit the reverse voltage generated by reversal of motor rotation.

  7. Cell culture on hydrophilicity-controlled silicon nitride surfaces.

    PubMed

    Masuda, Yuriko; Inami, Wataru; Miyakawa, Atsuo; Kawata, Yoshimasa

    2015-12-01

    Cell culture on silicon nitride membranes is required for atmospheric scanning electron microscopy, electron beam excitation assisted optical microscopy, and various biological sensors. Cell adhesion to silicon nitride membranes is typically weak, and cell proliferation is limited. We increased the adhesion force and proliferation of cultured HeLa cells by controlling the surface hydrophilicity of silicon nitride membranes. We covalently coupled carboxyl groups on silicon nitride membranes, and measured the contact angles of water droplets on the surfaces to evaluate the hydrophilicity. We cultured HeLa cells on the coated membranes and evaluated stretch of the cell. Cell migration and confluence were observed on the coated silicon nitride films. We also demonstrated preliminary observation result with direct electron beam excitation-assisted optical microscope.

  8. Black silicon with controllable macropore array for enhanced photoelectrochemical performance

    NASA Astrophysics Data System (ADS)

    Ao, Xianyu; Tong, Xili; Sik Kim, Dong; Zhang, Lianbing; Knez, Mato; Müller, Frank; He, Sailing; Schmidt, Volker

    2012-09-01

    Macroporous silicon with multiscale texture for reflection suppression and light trapping was achieved through a controllable electrochemical etching process. It was coated with TiO2 by atomic layer deposition, and used as the photoanode in photocatalytic water splitting. A conformal pn-junction was also built-in in order to split water without external bias. A 45% enhancement in photocurrent density was observed after black silicon etching. In comparison with nano-structured silicon, the etching process here has neither metal contamination nor requirement of vacuum facilities.

  9. Artificial neural networks for control of a grid-connected rectifier/inverter under disturbance, dynamic and power converter switching conditions.

    PubMed

    Li, Shuhui; Fairbank, Michael; Johnson, Cameron; Wunsch, Donald C; Alonso, Eduardo; Proaño, Julio L

    2014-04-01

    Three-phase grid-connected converters are widely used in renewable and electric power system applications. Traditionally, grid-connected converters are controlled with standard decoupled d-q vector control mechanisms. However, recent studies indicate that such mechanisms show limitations in their applicability to dynamic systems. This paper investigates how to mitigate such restrictions using a neural network to control a grid-connected rectifier/inverter. The neural network implements a dynamic programming algorithm and is trained by using back-propagation through time. To enhance performance and stability under disturbance, additional strategies are adopted, including the use of integrals of error signals to the network inputs and the introduction of grid disturbance voltage to the outputs of a well-trained network. The performance of the neural-network controller is studied under typical vector control conditions and compared against conventional vector control methods, which demonstrates that the neural vector control strategy proposed in this paper is effective. Even in dynamic and power converter switching environments, the neural vector controller shows strong ability to trace rapidly changing reference commands, tolerate system disturbances, and satisfy control requirements for a faulted power system.

  10. Silicon surface structure-controlled oleophobicity.

    PubMed

    Liu, Yan; Xiu, Yonghao; Hess, Dennis W; Wong, C P

    2010-06-01

    Superoleophobic surfaces display contact angles >150 degrees with liquids that have lower surface energies than does water. The design of superoleophobic surfaces requires an understanding of the effect of the geometrical shape of etched silicon surfaces on the contact angle and hysteresis observed when different liquids are brought into contact with these surfaces. This study used liquid-based metal-assisted etching and various silane treatments to create superoleophobic surfaces on a Si(111) surface. Etch conditions such as the etch time and etch solution concentration played critical roles in establishing the oleophobicity of Si(111). When compared to Young's contact angle, the apparent contact angle showed a transition from a Cassie to a Wenzel state for low-surface-energy liquids as different silane treatments were applied to the silicon surface. These results demonstrated the relationship between the re-entrant angle of etched surface structures and the contact angle transition between Cassie and Wenzel behavior on etched Si(111) surfaces.

  11. Controlling cellular activity by manipulating silicone surface roughness.

    PubMed

    Prasad, Babu R; Brook, Michael A; Smith, Terry; Zhao, Shigui; Chen, Yang; Sheardown, Heather; D'souza, Renita; Rochev, Yuri

    2010-07-01

    Silicone elastomers exhibit a broad range of beneficial properties that are exploited in biomaterials. In some cases, however, problems can arise at silicone elastomer interfaces. With breast implants, for example, the fibrous capsule that forms at the silicone interface can undergo contracture, which can lead to the need for revision surgery. The relationship between surface topography and wound healing--which could impact on the degree of contracture--has not been examined in detail. To address this, we prepared silicone elastomer samples with rms surface roughnesses varying from 88 to 650 nm and examined the growth of 3T3 fibroblasts on these surfaces. The PicoGreen assay demonstrated that fibroblast growth decreased with increases in surface roughness. Relatively smooth (approximately 88 nm) PDMS samples had ca. twice as much fibroblast DNA per unit area than the 'bumpy' (approximately 378 nm) and very rough (approximately 604 and approximately 650 nm) PDMS samples. While the PDMS sample with roughness of approximately 650 nm had significantly fewer fibroblasts at 24h than the TCP control, fibroblasts on the smooth silicone surprisingly reached confluence much more rapidly than on TCP, the gold standard for cell culture. Thus, increasing the surface roughness at the sub-micron scale could be a strategy worthy of consideration to help mitigate fibroblast growth and control fibrous capsule formation on silicone elastomer implants.

  12. Reversible fluctuation rectifier

    NASA Astrophysics Data System (ADS)

    Sokolov, I. M.

    1999-10-01

    The analysis of a Feynman's ratchet system [J. M. R. Parrondo and P. Español, Am. J. Phys. 64, 1125 (1996)] and of its electrical counterpart, a diode engine [I. M. Sokolov, Europhys. Lett. 44, 278 (1998)] has shown that ``fluctuation rectifiers'' consisting of a nonlinear element (ratchet, diode) and a linear element (vane, resistor) kept at different temperatures always show efficiency smaller than the Carnot value, thus indicating the irreversible mode of operation. We show that this irreversibility is not intrinsic for a system in simultaneous contact with two heat baths at different temperatures and that a fluctuation rectifier can work reversibly. This is illustrated by a model with two diodes switched in opposite directions, where the Carnot efficiency is achieved when backward resistivity of the diodes tends to infinity.

  13. Solid state thermal rectifier

    SciTech Connect

    2016-07-05

    Thermal rectifiers using linear nanostructures as core thermal conductors have been fabricated. A high mass density material is added preferentially to one end of the nanostructures to produce an axially non-uniform mass distribution. The resulting nanoscale system conducts heat asymmetrically with greatest heat flow in the direction of decreasing mass density. Thermal rectification has been demonstrated for linear nanostructures that are electrical insulators, such as boron nitride nanotubes, and for nanostructures that are conductive, such as carbon nanotubes.

  14. Diameter Controlled of Carbon Nanotubes Synthesized on Nanoporous Silicon Support

    NASA Astrophysics Data System (ADS)

    Asli, N. A.; Shamsudin, M. S.; Maryam, M.; Yusop, S. F. M.; Suriani, A. B.; Rusop, M.; Abdullah, S.

    2013-06-01

    Carbon nanotubes (CNTs) have been successfully synthesized on nanoporous silicon template (NPSiT) using botanical source, camphor oil. Diameter of CNTs synthesized was controlled by pore size of NPSiT prepared by photo-electrochemical anodization method. The diameter of CNTs grown on different NPSiT corresponded to the pore diameter of NPSiT. FESEM images showed self-organized bundles of fiber-like structures of CNTs with diameter of around 20nm which were successfully grown directly on nanoporous silicon while raman spectra obtained ratio of ID/IG at 0.67.

  15. Treatment to Control Adhesion of Silicone-Based Elastomers

    NASA Technical Reports Server (NTRS)

    deGroh, Henry C., III; Puleo, Bernadette J.; Waters, Deborah L.

    2013-01-01

    Seals are used to facilitate the joining of two items, usually temporarily. At some point in the future, it is expected that the items will need to be separated. This innovation enables control of the adhesive properties of silicone-based elastomers. The innovation may also be effective on elastomers other than the silicone-based ones. A technique has been discovered that decreases the level of adhesion of silicone- based elastomers to negligible levels. The new technique causes less damage to the material compared to alternative adhesion mitigation techniques. Silicone-based elastomers are the only class of rubber-like materials that currently meet NASA s needs for various seal applications. However, silicone-based elastomers have natural inherent adhesive properties. This stickiness can be helpful, but it can frequently cause problems as well, such as when trying to get items apart. In the past, seal adhesion was not always adequately addressed, and has caused in-flight failures where seals were actually pulled from their grooves, preventing subsequent spacecraft docking until the seal was physically removed from the flange via an extravehicular activity (EVA). The primary method used in the past to lower elastomer seal adhesion has been the application of some type of lubricant or grease to the surface of the seal. A newer method uses ultraviolet (UV) radiation a mixture of UV wavelengths in the range of near ultraviolet (NUV) and vacuum ultraviolet (VUV) wavelengths.

  16. Controlling the Sensing Properties of Silicon Nanowires via the Bonds Nearest to the Silicon Nanowire Surface.

    PubMed

    Halpern, Jeffrey Mark; Wang, Bin; Haick, Hossam

    2015-06-03

    Controlling the sensing properties of a silicon nanowire field effect transistor is dependent on the surface chemistry of the silicon nanowire. A standard silicon nanowire has a passive oxide layer (native oxide), which has trap states that cause sensing inaccuracies and desensitize the surface to nonpolar molecules. In this paper, we successfully modified the silicon nanowire surface with different nonoxide C3 alkyl groups, specifically, propyl (Si-CH2-CH2-CH3), propenyl (Si-CH═CH-CH3), and propynyl (Si-C≡C-CH3) modifications. The effect of the near surface bond on the sensor sensitivity and stability was explored by comparing three C3 surface modifications. A reduction of trap-states led to greater sensor stability and accuracy. The propenyl-modified sensor was consistently the most stable and sensitive sensor, among the applied sensors. The propenyl- and propynyl-modified sensors consistently performed with the best accuracy in identifying specific analytes with similar polarity or similar molecular weights. A combination of features from different sensing surfaces led to the best rubric for specific analytes identification. These results indicate that nonoxide sensor surfaces are useful in identifying specific analytes and that a combination of sensors with different surfaces in a cross-reactive array can lead to specific analytes detection.

  17. CNFET-based voltage rectifier circuit for biomedical implantable applications

    NASA Astrophysics Data System (ADS)

    Tu, Yonggen; Qian, Libo; Xia, Yinshui

    2017-02-01

    Carbon nanotube field effect transistor (CNFET) shows lower threshold voltage and smaller leakage current in comparison to its CMOS counterpart. In this paper, two kinds of CNFET-based rectifiers, full-wave rectifiers and voltage doubler rectifiers are presented for biomedical implantable applications. Based on the standard 32 nm CNFET model, the electrical performance of CNFET rectifiers is analyzed and compared. Simulation results show the voltage conversion efficiency (VCE) and power conversion efficiency (PCE) achieve 70.82% and 72.49% for CNFET full-wave rectifiers and 56.60% and 61.17% for CNFET voltage double rectifiers at typical 1.0 V input voltage excitation, which are higher than that of CMOS design. Moreover, considering the controllable property of CNFET threshold voltage, the effect of various design parameters on the electrical performance is investigated. It is observed that the VCE and PCE of CNFET rectifier increase with increasing CNT diameter and number of tubes. The proposed results would provide some guidelines for design and optimization of CNFET-based rectifier circuits. Project supported by the National Natural Science Foundation of China (Nos. 61131001, 61404077, 61571248), the Science and Technology Fund of Zhejiang Province (No. 2015C31090), the Natural Science Foundation of Ningbo (No. 2014A610147), State Key Laboratory of ASIC & System (No. 2015KF006) and the K. C. Wong Magna Fund in Ningbo University.

  18. Controlled samples for silicon defect and impurity studies

    SciTech Connect

    Ciszek, T.F.

    1995-08-01

    Because of the diverse defects and impurities that are present in any given sample of silicon material, it can be extremely difficult to conduct a controlled experiment to study the influence of any particular defect or impurity on photovoltaic properties such as minority charge carrier lifetime {tau} or solar cell efficiency q. For example, the influence of iron may be different if boron is present, or the influence of silicon self interstitial clusters may be different if oxygen is present. It thus becomes important to conduct such studies on controlled samples where the influence of secondary effects is minimized. At NREL, over the past several years, we have focused on using the high-purity float-zone (FZ) growth method to obtain controlled samples. Because the silicon melt is not in contact with a container, and no heated components are in the growth region, very high purities and low defect levels can be achieved in baseline material. The baseline can be controllably perturbed by introduction of specific defects or impurities. The chart shown below lists some of the types of defect and impurity. combinations that can be studied in this way. The boxes marked with an {open_quotes}x{close_quotes} represent combinations we have studied to some extent.

  19. Polarization-independent silicon metadevices for efficient optical wavefront control

    DOE PAGES

    Chong, Katie E.; Staude, Isabelle; James, Anthony Randolph; ...

    2015-07-20

    In this study, we experimentally demonstrate a functional silicon metadevice at telecom wavelengths that can efficiently control the wavefront of optical beams by imprinting a spatially varying transmittance phase independent of the polarization of the incident beam. Near-unity transmittance efficiency and close to 0–2π phase coverage are enabled by utilizing the localized electric and magnetic Mie-type resonances of low-loss silicon nanoparticles tailored to behave as electromagnetically dual-symmetric scatterers. We apply this concept to realize a metadevice that converts a Gaussian beam into a vortex beam. The required spatial distribution of transmittance phases is achieved by a variation of the latticemore » spacing as a single geometric control parameter.« less

  20. Polarization-independent silicon metadevices for efficient optical wavefront control

    SciTech Connect

    Chong, Katie E.; Staude, Isabelle; James, Anthony Randolph; Dominguez, Jason James; Liu, Sheng; Campione, Salvatore; Subramania, Ganapathi Subramanian; Luk, Ting S.; Decker, Manuel; Neshev, Dragomir N.; Brener, Igal; Kivshar, Yuri S.

    2015-07-20

    In this study, we experimentally demonstrate a functional silicon metadevice at telecom wavelengths that can efficiently control the wavefront of optical beams by imprinting a spatially varying transmittance phase independent of the polarization of the incident beam. Near-unity transmittance efficiency and close to 0–2π phase coverage are enabled by utilizing the localized electric and magnetic Mie-type resonances of low-loss silicon nanoparticles tailored to behave as electromagnetically dual-symmetric scatterers. We apply this concept to realize a metadevice that converts a Gaussian beam into a vortex beam. The required spatial distribution of transmittance phases is achieved by a variation of the lattice spacing as a single geometric control parameter.

  1. Controlling diffusion of lithium in silicon nanostructures.

    PubMed

    Chan, Tzu-Liang; Chelikowsky, James R

    2010-03-10

    The ability to control the diffusion of dopants or impurities is a controlling factor in the functionalization of materials used in devices both at the macro- and nanoscales. At the nanoscale, manipulating diffusion of dopants is complicated by a number of factors such as the role of quantum confinement and the large surface to volume ratio. Here we examine Li in Si nanostructures, as atoms with low atomic mass such as Li can be used as a carrier for energy storage with high specific energy capacity. Specifically, Li-ion batteries with specific energy capacity as high as 4200 mA h g(-1) using Si nanowires as anodes have been achieved. Using ab initio calculations, we determine how the factors of size and dimensionality can be used to achieve an optimal diffusion of Li atoms in Si nanostructures.

  2. Thin-film semiconductor rectifier has improved properties

    NASA Technical Reports Server (NTRS)

    1966-01-01

    Cadmium selenide-zinc selenide film is used as a thin film semiconductor rectifier. The film is vapor-deposited in a controlled concentration gradient into a glass substrate to form the required junctions between vapor-deposited gold electrodes.

  3. Electrical Control of Silicon Photonic Crystal Cavity by Graphene

    DTIC Science & Technology

    2012-01-01

    Electrical Control of Silicon Photonic Crystal Cavity by Graphene Arka Majumdar,†,‡,∥ Jonghwan Kim,†,∥ Jelena Vuckovic,‡ and Feng Wang...of electronics and photonics . The combination of graphene with photonic crystals is promising for electro-optic modulation. In this paper, we...demonstrate that by electrostatic gating a single layer of graphene on top of a photonic crystal cavity, the cavity resonance can be changed significantly. A

  4. Controllable nonlinear refraction characteristics in hydrogenated nanocrystalline silicon

    SciTech Connect

    Zheng, D. Q.; Ye, Q. H.; Shen, W. Z.; Su, W. A.

    2014-02-07

    Nonlinear refraction (NLR) of hydrogenated nanocrystalline silicon (nc-Si:H) has been investigated through the close aperture Z-scan method. We demonstrate a significant NLR and a unique feature of controllable NLR characteristics between saturable and Kerr NLR with the incident photon energy. We numerically evaluate the proportion of these two mechanisms in different wavelengths by a modified NLR equation. The band tail of nc-Si:H appears to play a crucial role in such NLR responses.

  5. Analysis of Single Phase PWM Rectifier for Different Applications

    NASA Astrophysics Data System (ADS)

    Mitra, Arkendu; Chowdhuri, Sumana

    2016-06-01

    This research work investigates the various applications of a PWM rectifier based on its input power factor. Most of the cases, the papers describe the operation of the rectifier used for unity power factor (UPF) operation. Beside this mode of operation, this paper compiles the application of the rectifier as STATCOM also, where the rectifier deals only with reactive power exchange. In this work, the controller is implemented by inserting a loop for reference input of phase angle which will be compared with the actual one, so that user can operate the rectifier at any power factor. Some basic formulae are derived for the input current, active power and reactive power based on which the control circuit is to be designed. Here two Proportional-Integral (PI) controllers are used. A brief description of tuning these two PI controllers is incorporated in this paper. Also some calculations are given to determine the harmonic factors of the input line current from which it is found that the rectifier when operated in each mode operation, the order of the harmonics are very low.

  6. Controlled skeletal progenitor cell migration on nanostructured porous silicon/silicon micropatterns

    NASA Astrophysics Data System (ADS)

    Torres-Costa, V.; Sánchez-Vaquero, V.; Muñoz-Noval, Á.; González-Méndez, L.; Punzón-Quijorna, E.; Gallach-Pérez, D.; Manso-Silván, M.; Martínez-Muñoz, G.; Climent-Font, A.; García-Ruiz, J. P.; Martín-Palma, R. J.

    2011-10-01

    In this work nanostructured porous silicon (nanoPS) was used for the fabrication of surface micropatterns aiming at controlling cell adhesion and migration. In particular, surface patterns of nanoPS and Si were engineered by high-energy ion-beam irradiation and subsequent anodization. It was found that human skeletal progenitor cells are sensitive to oneand two-dimensional patterns and that focal adhesion is inhibited on nanoPS areas. In spite of this anti-fouling characteristics, studies on patterns with reduced Si areas show that cells conform to nanoPS pathways favoring migration through cell protrusion, body translocation and tail retraction from two parallel Si traction rails. Moreover, migration can be blocked and cells tend to arrange when grid patterns with the appropriate dimensions are fabricated. The experimental results confirm that progenitor cells are able to exploit nanoPS anti-fouling designs by adapting to it for migration purposes.

  7. Method for rapid, controllable growth and thickness, of epitaxial silicon films

    DOEpatents

    Wang, Qi; Stradins, Paul; Teplin, Charles; Branz, Howard M.

    2009-10-13

    A method of producing epitaxial silicon films on a c-Si wafer substrate using hot wire chemical vapor deposition by controlling the rate of silicon deposition in a temperature range that spans the transition from a monohydride to a hydrogen free silicon surface in a vacuum, to obtain phase-pure epitaxial silicon film of increased thickness is disclosed. The method includes placing a c-Si substrate in a HWCVD reactor chamber. The method also includes supplying a gas containing silicon at a sufficient rate into the reaction chamber to interact with the substrate to deposit a layer containing silicon thereon at a predefined growth rate to obtain phase-pure epitaxial silicon film of increased thickness.

  8. Grain control in directional solidification of photovoltaic silicon

    NASA Astrophysics Data System (ADS)

    Lan, C. W.; Lan, W. C.; Lee, T. F.; Yu, A.; Yang, Y. M.; Hsu, W. C.; Hsu, B.; Yang, A.

    2012-12-01

    Directional solidification (DS) has become the major process for growing multi-crystalline silicon (mc-Si) for solar cells in the photovoltaic industry. The control of grains, as well as the grain boundaries, is particularly important to the crystal quality, and thus the solar cell efficiency. In this paper, we review the progress in the grain control of DS mc-Si from lab-scale to industrial-scale experiments. The control of the growth front was found effective in improving the grain size, but the grain size was found decreased with growth due to the sub-grain formation. With a better control of nucleation and grain competition by increasing the undercooling through enhanced uniform or spot cooling, grains with more Σ3 or twin boundaries were obtained. As the grain size increased with height, the growth of dislocations was found much slower than that without grain growth. The conversion efficiency of the solar cells fabricated from the wafers with grain control was significantly improved. Moreover, the seeded growth was also discussed.

  9. Fluorinated benzalkylsilane molecular rectifiers

    PubMed Central

    Lamport, Zachary A.; Broadnax, Angela D.; Harrison, David; Barth, Katrina J.; Mendenhall, Lee; Hamilton, Clayton T.; Guthold, Martin; Thonhauser, Timo; Welker, Mark E.; Jurchescu, Oana D.

    2016-01-01

    We report on the synthesis and electrical properties of nine new alkylated silane self-assembled monolayers (SAMs) – (EtO)3Si(CH2)nN = CHPhX where n = 3 or 11 and X = 4-CF3, 3,5-CF3, 3-F-4-CF3, 4-F, or 2,3,4,5,6-F, and explore their rectification behavior in relation to their molecular structure. The electrical properties of the films were examined in a metal/insulator/metal configuration, with a highly-doped silicon bottom contact and a eutectic gallium-indium liquid metal (EGaIn) top contact. The junctions exhibit high yields (>90%), a remarkable resistance to bias stress, and current rectification ratios (R) between 20 and 200 depending on the structure, degree of order, and internal dipole of each molecule. We found that the rectification ratio correlates positively with the strength of the molecular dipole moment and it is reduced with increasing molecular length. PMID:27897250

  10. Fluorinated benzalkylsilane molecular rectifiers

    NASA Astrophysics Data System (ADS)

    Lamport, Zachary A.; Broadnax, Angela D.; Harrison, David; Barth, Katrina J.; Mendenhall, Lee; Hamilton, Clayton T.; Guthold, Martin; Thonhauser, Timo; Welker, Mark E.; Jurchescu, Oana D.

    2016-11-01

    We report on the synthesis and electrical properties of nine new alkylated silane self-assembled monolayers (SAMs) – (EtO)3Si(CH2)nN = CHPhX where n = 3 or 11 and X = 4-CF3, 3,5-CF3, 3-F-4-CF3, 4-F, or 2,3,4,5,6-F, and explore their rectification behavior in relation to their molecular structure. The electrical properties of the films were examined in a metal/insulator/metal configuration, with a highly-doped silicon bottom contact and a eutectic gallium-indium liquid metal (EGaIn) top contact. The junctions exhibit high yields (>90%), a remarkable resistance to bias stress, and current rectification ratios (R) between 20 and 200 depending on the structure, degree of order, and internal dipole of each molecule. We found that the rectification ratio correlates positively with the strength of the molecular dipole moment and it is reduced with increasing molecular length.

  11. Controlled delivery of acyclovir from porous silicon micro- and nanoparticles

    NASA Astrophysics Data System (ADS)

    Maniya, Nalin H.; Patel, Sanjaykumar R.; Murthy, Z. V. P.

    2015-03-01

    In this work, micro- and nanoparticles of porous silicon (PSi) are demonstrated to act as effective carrier for the controlled delivery of acyclovir (ACV). PSi films prepared by electrochemical etching were fractured by ultrasonication to prepare micro- and nanoparticles. PSi native particles were thermally oxidized (TOPSi) and thermally hydrosilylated using undecylenic acid (UnPSi). PSi particles with three different surface chemistries were then loaded with ACV by physical adsorption and covalent attachment. Such particles were characterized by scanning electron microscopy, dynamic light scattering, and Fourier transform infrared spectroscopy. In vitro ACV release experiments in phosphate buffered saline showed sustained release behaviour from both micro- and nanoparticles and order of release was found to be native PSi > TOPSi > UnPSi. Drug release kinetics study using Korsmeyer-Peppas model suggested a combination of both drug diffusion and Si scaffold erosion based drug release mechanisms.

  12. RTD application in low power UHF rectifiers

    NASA Astrophysics Data System (ADS)

    Sinyakin, V. Yu; Makeev, M. O.; Meshkov, S. A.

    2016-08-01

    In the current work, the problem of UHF RFID passive tag sensitivity increase is considered. Tag sensitivity depends on HF signal rectifier efficiency and antenna-rectifier impedance matching. Possibility of RFID passive tag sensitivity increase up to 10 times by means of RTD use in HF signal rectifier in comparison with tags based on Schottky barrier diode is shown.

  13. Controlled Thin-Film Growth Of Silicon Carbide Polytypes

    NASA Technical Reports Server (NTRS)

    Powell, J. Anthony; Larkin, David J.

    1995-01-01

    Improved deposition process to grows thin layers of silicon carbide having chosen crystalline structures. Process incorporated into sequences of deposition and etching steps used to fabricate silicon-carbide-based semiconductor devices. Important advance because silicon carbide emerging as superior semiconductor for devices operating under conditions of high power, high temperature, and/or high frequency. Furthermore, various crystalline structures of SiC have different electronic properties, each suited to specific application.

  14. Selected applications of photothermal and photoluminescence heterodyne techniques for process control in silicon wafer manufacturing

    NASA Astrophysics Data System (ADS)

    Ehlert, Andreas; Kerstan, Michael; Lundt, Holger; Huber, Anton; Helmreich, Dieter; Geiler, Hans-Dieter; Karge, Harald; Wagner, Matthias

    1997-02-01

    Two noncontact laser-based heterodyne techniques, photothermal heterodyne (PTH) and photoluminescence heterodyne (PLH), are introduced and applied to processing and quality control in silicon wafer manufacturing. The crystallographic characteristics of process-induced defects in silicon wafers are suitable for the application of PTH and PLH techniques, which are demonstrated on selected examples from different steps of silicon wafer production. Both PLH and PTH techniques meet the demand for nondestructive and on-line-suitable measurement in the semiconductor industry.

  15. Soft-Switched Neutral-Point-Clamped Single-Phase Boost Rectifier

    NASA Astrophysics Data System (ADS)

    Itoh, Ryozo; Ishizaka, Kouichi

    A soft-switched neutral-point-clamped single-phase boost rectifier capable of compensating the imbalance load voltage is studied. This is based on a single-phase rectifier, in which an inductor is placed in series with the AC supply to resonate with a capacitor connected across the DC output of a full-bridge rectifier and the switching transition is mainly governed by a series resonance. The experimental prototype using insulated-gate bipolar transistors is implemented to investigate the operation under the charge control. The experimental results confirm that the rectifier has a neutral-point-clamp feature providing a good quality AC current.

  16. Experimental investigation of radiative thermal rectifier using vanadium dioxide

    SciTech Connect

    Ito, Kota; Nishikawa, Kazutaka; Iizuka, Hideo; Toshiyoshi, Hiroshi

    2014-12-22

    Vanadium dioxide (VO{sub 2}) exhibits a phase-change behavior from the insulating state to the metallic state around 340 K. By using this effect, we experimentally demonstrate a radiative thermal rectifier in the far-field regime with a thin film VO{sub 2} deposited on the silicon wafer. A rectification contrast ratio as large as two is accurately obtained by utilizing a one-dimensional steady-state heat flux measurement system. We develop a theoretical model of the thermal rectifier with optical responses of the materials retrieved from the measured mid-infrared reflection spectra, which is cross-checked with experimentally measured heat flux. Furthermore, we tune the operating temperatures by doping the VO{sub 2} film with tungsten (W). These results open up prospects in the fields of thermal management and thermal information processing.

  17. Steric stabilization of nonaqueous silicon slips. I - Control of particle agglomeration and packing. II - Pressure casting of powder compacts

    NASA Technical Reports Server (NTRS)

    Kerkar, Awdhoot V.; Henderson, Robert J. M.; Feke, Donald L.

    1990-01-01

    The application of steric stabilization to control particle agglomeration and packing of silicon powder in benzene and trichloroethylene is reported. The results provide useful guidelines for controlling unfavorable particle-particle interactions during nonaqueous processing of silicon-based ceramic materials. The application of steric stabilization to the control and improvement of green processing of nonaqueous silicon slips in pressure consolidation is also demonstrated.

  18. Facile morphological control of single-crystalline silicon nanowires

    NASA Astrophysics Data System (ADS)

    Wu, Shao-long; Zhang, Ting; Zheng, Rui-ting; Cheng, Guo-an

    2012-10-01

    To realize wider potentials of silicon nanowires (SiNWs), the morphological controllability is desirable. In this paper, we synthesized well vertically- and slantingly-aligned SiNWs with ultra-high aspect ratio in metal-assisted chemical etching method, and wafer-scale zigzag SiNWs with three types of turning angle were also obtained. The formation of the curved SiNWs is a result of the alternation of moving direction of Ag nanoparticles between the preferred <1 0 0> and other directions in Si substrates. The as-prepared SiNWs are single-crystalline and their orientations are mostly along the <1 0 0> or <1 1 1> directions. The surface of the resulting SiNWs can be controlled to be smooth or rough, with or without mesopores, by adjusting the etching conditions and using various Si substrates with different crystal orientations and doping levels. Moreover, the effects of the etching conditions (etching time, oxidant concentration, deposition time of Ag nanoparticles and etching temperature) and substrate properties (crystal orientation and doping level) on the as-prepared SiNWs have been discussed.

  19. Approaching the downsizing limit of silicon for surface-controlled lithium storage.

    PubMed

    Wang, Bin; Li, Xianglong; Luo, Bin; Hao, Long; Zhou, Min; Zhang, Xinghao; Fan, Zhuangjun; Zhi, Linjie

    2015-03-04

    Graphene-sheet-supported uniform ultrasmall (≈3 nm) silicon quantum dots have been successfully synthesized by a simple and effective self-assembly strategy, exhibiting unprecedented fast, surface-controlled lithium-storage behavior and outstanding lithium-storage properties including extraordinary rate capability and remarkable cycling stability, attributable to the intrinsic role of approaching the downsizing limit of silicon.

  20. Control of carbon balance in a silicon smelting furnace

    DOEpatents

    Dosaj, Vishu D.; Haines, Cathryn M.; May, James B.; Oleson, John D.

    1992-12-29

    The present invention is a process for the carbothermic reduction of silicon dioxide to form elemental silicon. Carbon balance of the process is assessed by measuring the amount of carbon monoxide evolved in offgas exiting the furnace. A ratio of the amount of carbon monoxide evolved and the amount of silicon dioxide added to the furnace is determined. Based on this ratio, the carbon balance of the furnace can be determined and carbon feed can be adjusted to maintain the furnace in carbon balance.

  1. Optical Control of Donor Spin Qubits in Silicon

    PubMed Central

    Gullans, M. J.; Taylor, J. M.

    2016-01-01

    We show how to achieve optical, spin-selective transitions from the ground state to excited orbital states of group-V donors (P, As, Sb, Bi) in silicon. We consider two approaches based on either resonant, far-infrared (IR) transitions of the neutral donor or resonant, near-IR excitonic transitions. For far-IR light, we calculate the dipole matrix elements between the valley-orbit and spin-orbit split states for all the goup-V donors using effective mass theory. We then calculate the maximum rate and amount of electron-nuclear spin-polarization achievable through optical pumping with circularly polarized light. We find this approach is most promising for Bi donors due to their large spin-orbit and valley-orbit interactions. Using near-IR light, spin-selective excitation is possible for all the donors by driving a two-photon Λ-transition from the ground state to higher orbitals with even parity. We show that externally applied electric fields or strain allow similar, spin-selective Λ-transition to odd-parity excited states. We anticipate these results will be useful for future spectroscopic investigations of donors, quantum control and state preparation of donor spin qubits, and for developing a coherent interface between donor spin qubits and single photons. PMID:28127227

  2. Single-Phase Boost Rectifier with Snubber Energy Recovery Feature

    NASA Astrophysics Data System (ADS)

    Neba, Yasuhiko; Ishizaka, Kouichi; Matsumoto, Hirokazu; Itoh, Ryozo

    Single-phase boost rectifier with snubber energy recovery feature operating under the current-mode control with a turn-on at constant clock time is studied. In this rectifier, the resonant circuit consisting of small inductor and capacitor is added in DC circuit. The snubber energy is transferred to an additional resonant capacitor and can next be transferred to the load circuit when an insulated-gate bipolar transistor as the active power device is turned off. The experimental prototype is implemented to investigate the operation. The experimental results confirm that the proposed snubber energy recovery scheme has the feasibility.

  3. Initial rectified attractors for perfect synchronization of chaotic systems

    NASA Astrophysics Data System (ADS)

    Sun, Mingxuan; He, Xiongxiong; Yu, Li

    2005-12-01

    The controlled attractor with initial rectifying action, referred to as initial rectified attractor (IRA) in this Letter, is introduced for the purpose of chaos synchronization. An IRA-based design is presented to make the states of the drive system and the response system synchronized within finite time. The reaching time is shown independent of initial conditions and dynamics of the chaotic systems, and can be pre-specified. With numerical experiments we demonstrate that such perfect synchronization can be achieved for modified Chua's circuit systems and Genesio chaotic systems.

  4. Vacuum-stripped silicone binder for thermal-control paint

    NASA Technical Reports Server (NTRS)

    Gilligan, J. E.; Rogers, F. O.

    1973-01-01

    Silicone elastomer is placed in evacuating system, heated to 160 C and held at this temperature for 24 hours. Elastomer is then cooled to room temperature in vacuum, producing upgraded, low outgassing polymer of increased molecular weight.

  5. Fabrication of High-Voltage Bridge Rectifier Modules for Pulse Power Applications

    DTIC Science & Technology

    2014-09-01

    15. SUBJECT TERMS Schottky diodes, solid state rectifiers, semiconductor device packaging, dielectric breakdown 16. SECURITY CLASSIFICATION OF...Sylgard® 527 A&B Silicone Dielectric Gel...voids. The remainder of the cavity was filled with Cotronics Duralco® 4537N epoxy to bind the terminals. The encapsulant was cured under a partial

  6. Controlled Release of Multiple Therapeutics from Silicone Hydrogel Contact Lenses

    PubMed Central

    White, Charles J.; DiPasquale, Stephen A.; Byrne, Mark E.

    2016-01-01

    Purpose The majority of contact lens wearers experience a significant level of ocular discomfort associated with lens wear, often within hours of wear, related to dry lenses, inflammation, protein adhesion to the lens surface, etc. Application of controlled drug release techniques has focused on the incorporation and/or release of a single comfort molecule from a lens including high molecular weight comfort agents or pharmaceutical agents. Previous studies have sought to mitigate the occurrence of only single propagators of discomfort. Clinical studies with eye drop solutions have shown that a mixture of diverse comfort agents selected to address multiple propagators of discomfort provide the greatest and longest lasting sensations of comfort for the patient. In this paper, multiple propagators of discomfort are addressed through the simultaneous release of four molecules from a novel contact lens to ensure high level of lens wear comfort. Methods Silicone hydrogel contact lenses were engineered via molecular imprinting strategies to simultaneously release up to four template molecules including hydropropyl methylcellulose (HPMC), trehalose, ibuprofen, and prednisolone. Results By adjusting the ratio of functional monomer to comfort molecule, a high level of control was demonstrated over the release rate. HPMC, trehalose, ibuprofen, and prednisolone were released at therapeutically relevant concentrations with varying rates from a single lens. Conclusions The results indicate use as daily disposable lenses for single day release or extended-wear lenses with multiple day release. Imprinted lenses are expected to lead to higher efficacy for patients compared to topical eye drops by improving compliance and mitigating concentration peaks and valleys associated with multiple drops. PMID:26945177

  7. Sized controlled synthesis, purification, and cell studies with silicon quantum dots

    NASA Astrophysics Data System (ADS)

    Shiohara, Amane; Prabakar, Sujay; Faramus, Angelique; Hsu, Chia-Yen; Lai, Ping-Shan; Northcote, Peter T.; Tilley, Richard D.

    2011-08-01

    This article describes the size control synthesis of silicon quantum dots with simple microemulsion techniques. The silicon nanocrystals are small enough to be in the strong confinement regime and photoluminesce in the blue region of the visible spectrum and the emission can be tuned by changing the nanocrystal size. The silicon quantum dots were capped with allylamine either a platinum catalyst or UV-radiation. An extensive purification protocol is reported and assessed using 1H NMR to produce ultra pure silicon quantum dots suitable for biological studies. The highly pure quantum dots were used in cellular uptake experiments and monitored using confocal microscopy. The results showed that the amine terminated silicon nanocrystals accumulated in lysosome but not in nuclei and could be used as bio-markers to monitor cancer cells over long timescales.This article describes the size control synthesis of silicon quantum dots with simple microemulsion techniques. The silicon nanocrystals are small enough to be in the strong confinement regime and photoluminesce in the blue region of the visible spectrum and the emission can be tuned by changing the nanocrystal size. The silicon quantum dots were capped with allylamine either a platinum catalyst or UV-radiation. An extensive purification protocol is reported and assessed using 1H NMR to produce ultra pure silicon quantum dots suitable for biological studies. The highly pure quantum dots were used in cellular uptake experiments and monitored using confocal microscopy. The results showed that the amine terminated silicon nanocrystals accumulated in lysosome but not in nuclei and could be used as bio-markers to monitor cancer cells over long timescales. Electronic supplementary information (ESI) available. See DOI: 10.1039/c1nr10458f

  8. Transport Properties of Hydrogen-Terminated Silicon Surface Controlled by Ionic-Liquid Gating

    NASA Astrophysics Data System (ADS)

    Sasama, Yosuke; Yamaguchi, Takahide; Tanaka, Masashi; Takeya, Hiroyuki; Takano, Yoshihiko

    2017-01-01

    We fabricated electric double-layer transistors on the hydrogen-terminated (111)-oriented surface of non-doped silicon using ionic liquid as a gate dielectric. We introduced hole carriers into silicon with the application of a negative gate voltage. The sheet resistance of silicon was controlled by more than three orders of magnitude at 220 K by changing the gate voltage. The temperature dependence of sheet resistance became weak as the gate voltage was increased, suggesting the approach to an insulator-metal transition.

  9. Recruitment of Gβγ controls the basal activity of G-protein coupled inwardly rectifying potassium (GIRK) channels: crucial role of distal C terminus of GIRK1

    PubMed Central

    Kahanovitch, Uri; Tsemakhovich, Vladimir; Berlin, Shai; Rubinstein, Moran; Styr, Boaz; Castel, Ruth; Peleg, Sagit; Tabak, Galit; Dessauer, Carmen W; Ivanina, Tatiana; Dascal, Nathan

    2014-01-01

    The G-protein coupled inwardly rectifying potassium (GIRK, or Kir3) channels are important mediators of inhibitory neurotransmission via activation of G-protein coupled receptors (GPCRs). GIRK channels are tetramers comprising combinations of subunits (GIRK1–4), activated by direct binding of the Gβγ subunit of Gi/o proteins. Heterologously expressed GIRK1/2 exhibit high, Gβγ-dependent basal currents (Ibasal) and a modest activation by GPCR or coexpressed Gβγ. Inversely, the GIRK2 homotetramers exhibit low Ibasal and strong activation by Gβγ. The high Ibasal of GIRK1 seems to be associated with its unique distal C terminus (G1-dCT), which is not present in the other subunits. We investigated the role of G1-dCT using electrophysiological and fluorescence assays in Xenopus laevis oocytes and protein interaction assays. We show that expression of GIRK1/2 increases the plasma membrane level of coexpressed Gβγ (a phenomenon we term ‘Gβγ recruitment’) but not of coexpressed Gαi3. All GIRK1-containing channels, but not GIRK2 homomers, recruited Gβγ to the plasma membrane. In biochemical assays, truncation of G1-dCT reduces the binding between the cytosolic parts of GIRK1 and Gβγ, but not Gαi3. Nevertheless, the truncation of G1-dCT does not impair activation by Gβγ. In fluorescently labelled homotetrameric GIRK1 channels and in the heterotetrameric GIRK1/2 channel, the truncation of G1-dCT abolishes Gβγ recruitment and decreases Ibasal. Thus, we conclude that G1-dCT carries an essential role in Gβγ recruitment by GIRK1 and, consequently, in determining its high basal activity. Our results indicate that G1-dCT is a crucial part of a Gβγ anchoring site of GIRK1-containing channels, spatially and functionally distinct from the site of channel activation by Gβγ. PMID:25384780

  10. Delayed rectifier K(+) currents and cardiac repolarization.

    PubMed

    Charpentier, Flavien; Mérot, Jean; Loussouarn, Gildas; Baró, Isabelle

    2010-01-01

    The two components of the cardiac delayed rectifier current have been the subject of numerous studies since firstly described. This current controls the action potential duration and is highly regulated. After identification of the channel subunits underlying IKs, KCNQ1 associated with KCNE1, and IKr, HERG, their involvement in human cardiac channelopathies have provided various models allowing the description of the molecular mechanisms of the KCNQ1 and HERG channels trafficking, activity and regulation. More recently, studies have been focusing on the unveiling of different partners of the pore-forming proteins that contribute to their maturation, trafficking, activity and/or degradation, on one side, and on their respective expression in the heterogeneous cardiac tissue, on the other side. The aim of this review is to report and discuss the major works on IKs and IKr and the most recent ones that help to understand the precise function of these currents in the heart.

  11. Process to produce silicon carbide fibers using a controlled concentration of boron oxide vapor

    NASA Technical Reports Server (NTRS)

    Barnard, Thomas Duncan (Inventor); Lipowitz, Jonathan (Inventor); Nguyen, Kimmai Thi (Inventor)

    2001-01-01

    A process for producing polycrystalline silicon carbide by heating an amorphous ceramic fiber that contains silicon and carbon in an environment containing boron oxide vapor. The boron oxide vapor is produced in situ by the reaction of a boron containing material such as boron carbide and an oxidizing agent such as carbon dioxide, and the amount of boron oxide vapor can be controlled by varying the amount and rate of addition of the oxidizing agent.

  12. Process to produce silicon carbide fibers using a controlled concentration of boron oxide vapor

    NASA Technical Reports Server (NTRS)

    Barnard, Thomas Duncan (Inventor); Lipowitz, Jonathan (Inventor); Nguyen, Kimmai Thi (Inventor)

    2000-01-01

    A process for producing polycrystalline silicon carbide includes heating an amorphous ceramic fiber that contains silicon and carbon in an environment containing boron oxide vapor. The boron oxide vapor is produced in situ by the reaction of a boron containing material such as boron carbide and an oxidizing agent such as carbon dioxide, and the amount of boron oxide vapor can be controlled by varying the amount and rate of addition of the oxidizing agent.

  13. Controls on silicon cycling in Southeast Asian rice production systems

    NASA Astrophysics Data System (ADS)

    Klotzbücher, Thimo; Marxen, Anika; Vetterlein, Doris; Jahn, Reinhold

    2013-04-01

    Recent research suggests that silicon (Si) is beneficial for rice plants, i.e., a sufficient Si supply improves their resistance against pests and pathogens and increases the uptake of essential nutrients. Despite its potential importance for rice yields, cycling of Si in rice production systems is poorly studied. We assess plant-available Si (Sipa; determined using acetate extraction) in topsoils (Ap+Arp horizons) and Si uptake by plants at 70 paddy fields managed by local farmers in contrasting regions of Vietnam and the Philippines. First results show that Sipa contents are considerably larger in Philippine (217 ± 100 mg Sipa kg-1 ) than in Vietnamese (32 ± 19 mg Sipa kg-1) paddy soils. Rice straw from the Philippines contains 8.6 ± 0.9 % Si, straw from Vietnam 5.0 ± 1.2 % Si. Laboratory experiments showed that Si is limiting the growth of rice plants in some of the Vietnamese soils. We assume that differences in geo-/ pedologic conditions between Vietnam and the Philippines explain the data. Large Sipa contents in the Philippine soils are due to recent rock formation by active volcanism, hence, by a large Sipa input due to mineral weathering in recent geologic history. In contrast, parent materials of the Vietnamese paddy soils derive from old and highly weathered land surfaces. Hence, our data suggest that geo-/pedologic conditions are the main control for the availability of Si in paddy soils. Currently, we examine the relevance of agricultural practices for small-scale differences in the availability of Si within regions. Inadequate practices, such as removal of rice straw from the fields, might deplete Sipa in paddy soils causing a decrease in rice yields in some regions of Vietnam. We investigate the role of phytoliths (amorphous Si bodies contained in rice straw) as source of Sipa in paddy soils. Our methods include laboratory experiments and the assessment of turnover times of phytoliths in paddy soils; first results will be presented and discussed

  14. Hierarchical silicon etched structures for controlled hydrophobicity/superhydrophobicity.

    PubMed

    Xiu, Yonghao; Zhu, Lingbo; Hess, Dennis W; Wong, C P

    2007-11-01

    Silicon surface hydrophobicity has been varied by using silane treatments on silicon pyramid surfaces generated by KOH anisotropic etching. Results demonstrated that by altering the surface hydrophobicity, the apparent contact angle changed in accord with the Wenzel equation for surface structures with inclined side walls. Hierarchical structures were also constructed from Si pyramids where nanostructures were added by Au-assisted electroless HF/H2O2 etching. Surface hydrophobicity and superhydrophobicity were achieved by surface modification with a variety of silanes. Stability of the Cassie state of superhydrophobicity is described with respect to the Laplace pressure as indicated by the water droplet meniscus in contact with the hierarchical structures. The contact angle hysteresis observed is also discussed with respect to water/substrate adhesion.

  15. Etching and Chemical Control of the Silicon Nitride Surface.

    PubMed

    Brunet, Marine; Aureau, Damien; Chantraine, Paul; Guillemot, François; Etcheberry, Arnaud; Gouget-Laemmel, Anne Chantal; Ozanam, François

    2017-01-25

    Silicon nitride is used for many technological applications, but a quantitative knowledge of its surface chemistry is still lacking. Native oxynitride at the surface is generally removed using fluorinated etchants, but the chemical composition of surfaces still needs to be determined. In this work, the thinning (etching efficiency) of the layers after treatments in HF and NH4F solutions has been followed by using spectroscopic ellipsometry. A quantitative estimation of the chemical bonds found on the surface is obtained by a combination of infrared absorption spectroscopy in ATR mode, X-ray photoelectron spectroscopy, and colorimetry. Si-F bonds are the majority species present at the surface after silicon nitride etching; some Si-OH and a few Si-NHx bonds are also present. No Si-H bonds are present, an unfavorable feature for surface functionalization in view of the interest of such mildly reactive groups for achieving stable covalent grafting. Mechanisms are described to support the experimental results, and two methods are proposed for generating surface SiH species: enriching the material in silicon, or submitting the etched surface to a H2 plasma treatment.

  16. Controlling the dopant dose in silicon by mixed-monolayer doping.

    PubMed

    Ye, Liang; Pujari, Sidharam P; Zuilhof, Han; Kudernac, Tibor; de Jong, Michel P; van der Wiel, Wilfred G; Huskens, Jurriaan

    2015-02-11

    Molecular monolayer doping (MLD) presents an alternative to achieve doping of silicon in a nondestructive way and holds potential for realizing ultrashallow junctions and doping of nonplanar surfaces. Here, we report the mixing of dopant-containing alkenes with alkenes that lack this functionality at various ratios to control the dopant concentration in the resulting monolayer and concomitantly the dopant dose in the silicon substrate. The mixed monolayers were grafted onto hydrogen-terminated silicon using well-established hydrosilylation chemistry. Contact angle measurements, X-ray photon spectroscopy (XPS) on the boron-containing monolayers, and Auger electron spectroscopy on the phosphorus-containing monolayers show clear trends as a function of the dopant-containing alkene concentration. Dynamic secondary-ion mass spectroscopy (D-SIMS) and Van der Pauw resistance measurements on the in-diffused samples show an effective tuning of the doping concentration in silicon.

  17. Controlling silicon crystallization in aluminum-induced crystallization via substrate plasma treatment

    NASA Astrophysics Data System (ADS)

    Hainey, Mel F.; Innocent-Dolor, Jon-L.; Choudhury, Tanushree H.; Redwing, Joan M.

    2017-03-01

    The effect of reactive ion etching using chlorine or fluorine-based plasmas on aluminum-induced crystallization (AIC) of silicon on fused silica glass substrates was investigated with the goal of chemically modifying the substrate surface and thereby influencing the crystallization behavior. Chlorine etching of the glass prior to AIC resulted in six times faster silicon crystallization times and smaller grain sizes than films formed on untreated substrates while fluorine etching resulted in crystallization times double than those on untreated surfaces. The differences in crystallization behavior were attributed to changes in surface chemistry and surface energy of the glass as a result of the plasma treatment as supported by X-ray photoelectron spectroscopy and contact angle measurements. The different surface treatments were then combined with optical lithography to control the location of crystallization on the substrate surface to realize the production of patterned polycrystalline silicon films from initially continuous aluminum and silicon.

  18. RF sputtering for controlling dihydride and monohydride bond densities in amorphous silicon hydride

    DOEpatents

    Jeffery, F.R.; Shanks, H.R.

    1980-08-26

    A process is described for controlling the dihydride and monohydride bond densities in hydrogenated amorphous silicone produced by reactive rf sputtering of an amorphous silicon target. There is provided a chamber with an amorphous silicon target and a substrate therein with the substrate and the target positioned such that when rf power is applied to the target the substrate is in contact with the sputtering plasma produced thereby. Hydrogen and argon are fed to the chamber and the pressure is reduced in the chamber to a value sufficient to maintain a sputtering plasma therein, and then rf power is applied to the silicon target to provide a power density in the range of from about 7 watts per square inch to about 22 watts per square inch to sputter an amorphous solicone hydride onto the substrate, the dihydride bond density decreasing with an increase in the rf power density. Substantially pure monohydride films may be produced.

  19. Controllable and facile fabrication of gold nanostructures for selective metal-assisted etching of silicon.

    PubMed

    Zhang, Xinyue; Zhu, Juan; Huang, Xiaopeng; Qian, Qiuping; He, Yonglin; Chi, Lifeng; Wang, Yapei

    2014-06-25

    A method with the combination of organic-vapor-assisted polymer swelling and nanotransfer printing (nTP) is used to manufacture desirable patterns consisting of gold nano-clusters on silicon wafers for Au-assisted etching of silicon. This method remarkably benefits to the size control and regional selection of the deposited Au. By tuning the thickness of the Au films deposited on the polydimethylsiloxane (PDMS) stamps, along with the swelling of PDMS stamps in acetone atmosphere, the Au films are cracked into diverse nanostructures. These nanostructures are covalently transferred onto silicon substrates in a large scale and enable to accelerate the chemical etching of silicon. The etched areas are composed of porous structures which can be readily distinguished from the surroundings on optical microscope. PDMS stamps and the Au clusters provide the control over the feature of the etched areas and the porous silicon, respectively. The silicon surfaces with patterned porous features offer a platform for exploiting new functional templates, for example, they present a diversity of antireflective and fluorescent performance.

  20. Thermal system design and modeling of meniscus controlled silicon growth process for solar applications

    NASA Astrophysics Data System (ADS)

    Wang, Chenlei

    The direct conversion of solar radiation to electricity by photovoltaics has a number of significant advantages as an electricity generator. That is, solar photovoltaic conversion systems tap an inexhaustible resource which is free of charge and available anywhere in the world. Roofing tile photovoltaic generation, for example, saves excess thermal heat and preserves the local heat balance. This means that a considerable reduction of thermal pollution in densely populated city areas can be attained. A semiconductor can only convert photons with the energy of the band gap with good efficiency. It is known that silicon is not at the maximum efficiency but relatively close to it. There are several main parts for the photovoltaic materials, which include, single- and poly-crystalline silicon, ribbon silicon, crystalline thin-film silicon, amorphous silicon, copper indium diselenide and related compounds, cadmium telluride, et al. In this dissertation, we focus on melt growth of the single- and poly-crystalline silicon manufactured by Czochralski (Cz) crystal growth process, and ribbon silicon produced by the edge-defined film-fed growth (EFG) process. These two methods are the most commonly used techniques for growing photovoltaic semiconductors. For each crystal growth process, we introduce the growth mechanism, growth system design, general application, and progress in the numerical simulation. Simulation results are shown for both Czochralski and EFG systems including temperature distribution of the growth system, velocity field inside the silicon melt and electromagnetic field for the EFG growth system. Magnetic field is applied on Cz system to reduce the melt convection inside crucible and this has been simulated in our numerical model. Parametric studies are performed through numerical and analytical models to investigate the relationship between heater power levels and solidification interface movement and shape. An inverse problem control scheme is developed to

  1. Advanced process control and novel test methods for PVD silicon and elastomeric silicone coatings utilized on ion implant disks, heatsinks and selected platens

    NASA Astrophysics Data System (ADS)

    Springer, J.; Allen, B.; Wriggins, W.; Kuzbyt, R.; Sinclair, R.

    2012-11-01

    Coatings play multiple key roles in the proper functioning of mature and current ion implanters. Batch and serial implanters require strategic control of elemental and particulate contamination which often includes scrutiny of the silicon surface coatings encountering direct beam contact. Elastomeric Silicone Coatings must accommodate wafer loading and unloading as well as direct backside contact during implant plus must maintain rigid elemental and particulate specifications. The semiconductor industry has had a significant and continuous effort to obtain ultra-pure silicon coatings with sustained process performance and long life. Low particles and reduced elemental levels for silicon coatings are a major requirement for process engineers, OEM manufacturers, and second source suppliers. Relevant data will be presented. Some emphasis and detail will be placed on the structure and characteristics of a relatively new PVD Silicon Coating process that is very dense and homogeneous. Wear rate under typical ion beam test conditions will be discussed. The PVD Silicon Coating that will be presented here is used on disk shields, wafer handling fingers/fences, exclusion zones of heat sinks, beam dumps and other beamline components. Older, legacy implanters can now provide extended process capability using this new generation PVD silicon - even on implanter systems that were shipped long before the advent of silicon coating for contamination control. Low particles and reduced elemental levels are critical performance criteria for the silicone elastomers used on disk heatsinks and serial implanter platens. Novel evaluation techniques and custom engineered tools are used to investigate the surface interaction characteristics of multiple Elastomeric Silicone Coatings currently in use by the industry - specifically, friction and perpendicular stiction. These parameters are presented as methods to investigate the critical wafer load and unload function. Unique tools and test

  2. Advanced process control and novel test methods for PVD silicon and elastomeric silicone coatings utilized on ion implant disks, heatsinks and selected platens

    SciTech Connect

    Springer, J.; Allen, B.; Wriggins, W.; Kuzbyt, R.; Sinclair, R.

    2012-11-06

    Coatings play multiple key roles in the proper functioning of mature and current ion implanters. Batch and serial implanters require strategic control of elemental and particulate contamination which often includes scrutiny of the silicon surface coatings encountering direct beam contact. Elastomeric Silicone Coatings must accommodate wafer loading and unloading as well as direct backside contact during implant plus must maintain rigid elemental and particulate specifications. The semiconductor industry has had a significant and continuous effort to obtain ultra-pure silicon coatings with sustained process performance and long life. Low particles and reduced elemental levels for silicon coatings are a major requirement for process engineers, OEM manufacturers, and second source suppliers. Relevant data will be presented. Some emphasis and detail will be placed on the structure and characteristics of a relatively new PVD Silicon Coating process that is very dense and homogeneous. Wear rate under typical ion beam test conditions will be discussed. The PVD Silicon Coating that will be presented here is used on disk shields, wafer handling fingers/fences, exclusion zones of heat sinks, beam dumps and other beamline components. Older, legacy implanters can now provide extended process capability using this new generation PVD silicon - even on implanter systems that were shipped long before the advent of silicon coating for contamination control. Low particles and reduced elemental levels are critical performance criteria for the silicone elastomers used on disk heatsinks and serial implanter platens. Novel evaluation techniques and custom engineered tools are used to investigate the surface interaction characteristics of multiple Elastomeric Silicone Coatings currently in use by the industry - specifically, friction and perpendicular stiction. These parameters are presented as methods to investigate the critical wafer load and unload function. Unique tools and test

  3. Amorphous silicon Schottky barrier solar cells incorporating a thin insulating layer and a thin doped layer

    DOEpatents

    Carlson, David E.

    1980-01-01

    Amorphous silicon Schottky barrier solar cells which incorporate a thin insulating layer and a thin doped layer adjacent to the junction forming metal layer exhibit increased open circuit voltages compared to standard rectifying junction metal devices, i.e., Schottky barrier devices, and rectifying junction metal insulating silicon devices, i.e., MIS devices.

  4. ISGV Self-rectifying Turbine Design For Thermoacoustic Application

    NASA Astrophysics Data System (ADS)

    Sammak, Shervin; Asghary, Maryam; Ghorbanian, Kaveh

    2014-11-01

    Thermoacoustic engines produce the acoustic power from wasted heat and then electricity can be generated from acoustic power. Utilizing self-rectifying turbine after a thermoacoustic engine allows for deploying standard generators with high enough rotational speed that remarkably reduce abrasion, size and cost and significantly increase efficiency and controllability in comparison with linear alternators. In this paper, by evaluating all different type of self-rectifying turbine, impulse turbine with self-piched controlled (ISGV) is chosen as the most appropriate type for this application. This kind of turbine is designed in detail for a popular engine, thermoacoustic stirling heat engine (TASHE). In order to validate the design, a full scale size of designed turbine is modeled in ANSYS CFX. As a result, optimum power and efficiency gained based on numerical data.

  5. Fabrication of uniform porosity, all-porous-silicon microstructures and stress/stress gradient control

    NASA Astrophysics Data System (ADS)

    Sun, Xiao; Parish, Giacinta; Keating, Adrian

    2017-04-01

    All-mesoporous silicon microstructures were released with standard micromachining processes. The extremely high porosity of the films allows control of the mechanical properties as well as providing a platform material for devices with extremely large surface area. To pattern and release devices from these highly porous structural layers, pore filling, photoresist mask adhesion and electropolishing techniques were developed. The internal stress of porous silicon was characterized under repeated thermal annealing and HF immersion treatments, allowing a stable, slightly tensile stress of 2.0  ±  0.4 MPa to be achieved. A method to independently control the stress gradient induced curvature in the porous MEMS devices was developed, which achieved released PS structures that were flat to within 78 nm over a range of 100 µm. This is the first time that fully released, stress gradient adjusted all-mesoporous-silicon structures have been reported.

  6. Rectified growth of histotripsy bubbles

    PubMed Central

    Kreider, Wayne; Maxwell, Adam D.; Khokhlova, Tatiana; Simon, Julianna C.; Khokhlova, Vera A.; Sapozhnikov, Oleg; Bailey, Michael R.

    2015-01-01

    Histotripsy treatments use high-amplitude shock waves to fractionate tissue. Such treatments have been demonstrated using both cavitation bubbles excited with microsecond-long pulses and boiling bubbles excited for milliseconds. A common feature of both approaches is the need for bubble growth, where at 1 MHz cavitation bubbles reach maximum radii on the order of 100 microns and boiling bubbles grow to about 1 mm. To explore how histotripsy bubbles grow, a model of a single, spherical bubble that accounts for heat and mass transport was used to simulate the bubble dynamics. Results suggest that the asymmetry inherent in nonlinearly distorted waveforms can lead to rectified bubble growth, which is enhanced at elevated temperatures. Moreover, the rate of this growth is sensitive to the waveform shape, in particular the transition from the peak negative pressure to the shock front. Current efforts are focused on elucidating this behavior by obtaining an improved calibration of measured histotripsy waveforms with a fiber-optic hydrophone, using a nonlinear propagation model to assess the impact on the focal waveform of higher harmonics present at the source’s surface, and photographically observing bubble growth rates. PMID:26413193

  7. Control of back surface reflectance from aluminum alloyed contacts on silicon solar cells

    SciTech Connect

    Cudzinovic, M.; Sopori, B.

    1996-05-01

    A process for forming highly reflective aluminum back contacts with low contact resistance to silicon solar cells is described. By controlling the process conditions, it is possible to vary the silicon/aluminum interface from a specular to a diffuse reflector while maintaining a high interface reflectance. The specular interface is found to be a uniform silicon/aluminum alloy layer a few angstroms thick that has epitaxially regrown on the silicon. The diffuse interface consists of randomly distributed (111) pyramids produced by crystallographic out-diffusion of the bulk silicon. The light trapping ability of the diffuse contact is found to be close to the theoretical limit. Both types of contacts are found to have specific contact resistivities of 10{sup {minus}5} {Omega}-cm{sup 2}. The process for forming the contacts involves illuminating the devices with tungsten halogen lamps. The process is rapid (under 100 s) and low temperature (peak temperature < 580{degrees}C), making it favorable for commercial solar cell fabrication.

  8. Coherent control of single spins in silicon carbide at room temperature

    NASA Astrophysics Data System (ADS)

    Widmann, Matthias; Lee, Sang-Yun; Rendler, Torsten; Son, Nguyen Tien; Fedder, Helmut; Paik, Seoyoung; Yang, Li-Ping; Zhao, Nan; Yang, Sen; Booker, Ian; Denisenko, Andrej; Jamali, Mohammad; Momenzadeh, S. Ali; Gerhardt, Ilja; Ohshima, Takeshi; Gali, Adam; Janzén, Erik; Wrachtrup, Jörg

    2015-02-01

    Spins in solids are cornerstone elements of quantum spintronics. Leading contenders such as defects in diamond or individual phosphorus dopants in silicon have shown spectacular progress, but either lack established nanotechnology or an efficient spin/photon interface. Silicon carbide (SiC) combines the strength of both systems: it has a large bandgap with deep defects and benefits from mature fabrication techniques. Here, we report the characterization of photoluminescence and optical spin polarization from single silicon vacancies in SiC, and demonstrate that single spins can be addressed at room temperature. We show coherent control of a single defect spin and find long spin coherence times under ambient conditions. Our study provides evidence that SiC is a promising system for atomic-scale spintronics and quantum technology.

  9. Controlling the Nanoscale Patterning of AuNPs on Silicon Surfaces

    PubMed Central

    Williams, Sophie E.; Davies, Philip R.; Bowen, Jenna L.; Allender, Chris J.

    2013-01-01

    This study evaluates the effectiveness of vapour-phase deposition for creating sub-monolayer coverage of aminopropyl triethoxysilane (APTES) on silicon in order to exert control over subsequent gold nanoparticle deposition. Surface coverage was evaluated indirectly by observing the extent to which gold nanoparticles (AuNPs) deposited onto the modified silicon surface. By varying the distance of the silicon wafer from the APTES source and concentration of APTES in the evaporating media, control over subsequent gold nanoparticle deposition was achievable to an extent. Fine control over AuNP deposition (AuNPs/μm2) however, was best achieved by adjusting the ionic concentration of the AuNP-depositing solution. Furthermore it was demonstrated that although APTES was fully removed from the silicon surface following four hours incubation in water, the gold nanoparticle-amino surface complex was stable under the same conditions. Atomic force microscopy (AFM) and X-ray photoelectron spectroscopy (XPS) were used to study these affects.

  10. Controlling the spectrum of photons generated on a silicon nanophotonic chip

    NASA Astrophysics Data System (ADS)

    Kumar, Ranjeet; Ong, Jun Rong; Savanier, Marc; Mookherjea, Shayan

    2014-11-01

    Directly modulated semiconductor lasers are widely used, compact light sources in optical communications. Semiconductors can also be used to generate nonclassical light; in fact, CMOS-compatible silicon chips can be used to generate pairs of single photons at room temperature. Unlike the classical laser, the photon-pair source requires control over a two-dimensional joint spectral intensity (JSI) and it is not possible to process the photons separately, as this could destroy the entanglement. Here we design a photon-pair source, consisting of planar lightwave components fabricated using CMOS-compatible lithography in silicon, which has the capability to vary the JSI. By controlling either the optical pump wavelength, or the temperature of the chip, we demonstrate the ability to select different JSIs, with a large variation in the Schmidt number. Such control can benefit high-dimensional communications where detector-timing constraints can be relaxed by realizing a large Schmidt number in a small frequency range.

  11. Controlling the spectrum of photons generated on a silicon nanophotonic chip.

    PubMed

    Kumar, Ranjeet; Ong, Jun Rong; Savanier, Marc; Mookherjea, Shayan

    2014-11-20

    Directly modulated semiconductor lasers are widely used, compact light sources in optical communications. Semiconductors can also be used to generate nonclassical light; in fact, CMOS-compatible silicon chips can be used to generate pairs of single photons at room temperature. Unlike the classical laser, the photon-pair source requires control over a two-dimensional joint spectral intensity (JSI) and it is not possible to process the photons separately, as this could destroy the entanglement. Here we design a photon-pair source, consisting of planar lightwave components fabricated using CMOS-compatible lithography in silicon, which has the capability to vary the JSI. By controlling either the optical pump wavelength, or the temperature of the chip, we demonstrate the ability to select different JSIs, with a large variation in the Schmidt number. Such control can benefit high-dimensional communications where detector-timing constraints can be relaxed by realizing a large Schmidt number in a small frequency range.

  12. Silicon-Germanium Voltage-Controlled Oscillator at 105 GHz

    NASA Technical Reports Server (NTRS)

    Wong, Alden; Larocca, Tim; Chang, M. Frank; Samoska, Lorene A.

    2011-01-01

    A group at UCLA, in collaboration with the Jet Propulsion Laboratory, has designed a voltage-controlled oscillator (VCO) created specifically for a compact, integrated, electronically tunable frequency generator useable for submillimeter- wave science instruments operating in extreme cold environments.

  13. Asymmetric gear rectifies random robot motion

    NASA Astrophysics Data System (ADS)

    Li, He; Zhang, H. P.

    2013-06-01

    We experimentally study the dynamics of centimetric robots and their interactions with rotary gears through inelastic collisions. Under the impacts of self-propelled robots, a gear with symmetric teeth diffuses with no preferred direction of motion. An asymmetric gear, however, rectifies random motion of nearby robots which, in return, exert a torque on the gear and drive it into unidirectional motion. Rectification efficiency increases with the degree of gear asymmetry. Our work demonstrates that asymmetric environments can be used to rectify and extract energy from random motion of macroscopic self-propelled particles.

  14. Controlling magnetic and electric dipole modes in hollow silicon nanocylinders.

    PubMed

    van de Haar, Marie Anne; van de Groep, Jorik; Brenny, Benjamin J M; Polman, Albert

    2016-02-08

    We propose a dielectric nanoresonator geometry consisting of hollow dielectric nanocylinders which support geometrical resonances. We fabricate such hollow Si particles with an outer diameter of 108-251 nm on a Si substrate, and determine their resonant modes with cathodo-luminescence (CL) spectroscopy and optical dark-field (DF) scattering measurements. The scattering behavior is numerically investigated in a systematic fashion as a function of wavelength and particle geometry. We find that the additional design parameter as a result of the introduction of a center gap can be used to control the relative spectral spacing of the resonant modes, which will enable additional control over the angular radiation pattern of the scatterers. Furthermore, the gap offers direct access to the enhanced magnetic dipole modal field in the center of the particle.

  15. Silicon Controlled Switch for Detection of Ionizing Radiation

    DTIC Science & Technology

    2015-12-01

    for triggering self-terminating pulses. Various circuit elements such as a Zener (Zn) diode connected to the AG, feedback resistor (RF), and RC load...for triggering self-terminating pulses. Various circuit elements such as a Zener (Zn) diode connected to the AG, feedback resistor (RF), and RC load...7  B.  CONTROL OF I-V CHARACTERISTICS USING ZENER DIODE

  16. High-Fidelity Microwave Control of Single-Atom Spin Qubits in Silicon

    DTIC Science & Technology

    2014-07-08

    measurement of the first qubit. The existence of these entangled states are a unique feature of quantum mechanics that has no classical analogue. The degree...16. SECURITY CLASSIFICATION OF: As classical computers begin to reach their fundamental performance limits, quantum computers will be an invaluable...microwave control of single-atom spin qubits in silicon Report Title As classical computers begin to reach their fundamental performance limits, quantum

  17. Formation of size controlled silicon nanocrystals in nitrogen free silicon dioxide matrix prepared by plasma enhanced chemical vapor deposition

    SciTech Connect

    Laube, J. Gutsch, S.; Hiller, D.; Zacharias, M.; Bruns, M.; Kübel, C.; Weiss, C.

    2014-12-14

    This paper reports the growth of silicon nanocrystals (SiNCs) from SiH4–O{sub 2} plasma chemistry. The formation of an oxynitride was avoided by using O{sub 2} instead of the widely used N{sub 2}O as precursor. X-ray photoelectron spectroscopy is used to prove the absence of nitrogen in the layers and determine the film stoichiometry. It is shown that the Si rich film growth is achieved via non-equilibrium deposition that resembles a interphase clusters mixture model. Photoluminescence and Fourier transformed infrared spectroscopy are used to monitor the formation process of the SiNCs, to reveal that the phase separation is completed at lower temperatures as for SiNCs based on oxynitrides. Additionally, transmission electron microscopy proves that the SiNC sizes are well controllable by superlattice configuration, and as a result, the optical emission band of the Si nanocrystal can be tuned over a wide range.

  18. Fabrication of disposable topographic silicon oxide from sawtoothed patterns: control of arrays of gold nanoparticles.

    PubMed

    Cho, Heesook; Yoo, Hana; Park, Soojin

    2010-05-18

    Disposable topographic silicon oxide patterns were fabricated from polymeric replicas of sawtoothed glass surfaces, spin-coating of poly(dimethylsiloxane) (PDMS) thin films, and thermal annealing at certain temperature and followed by oxygen plasma treatment of the thin PDMS layer. A simple imprinting process was used to fabricate the replicated PDMS and PS patterns from sawtoothed glass surfaces. Next, thin layers of PDMS films having different thicknesses were spin-coated onto the sawtoothed PS surfaces and annealed at 60 degrees C to be drawn the PDMS into the valley of the sawtoothed PS surfaces, followed by oxygen plasma treatment to fabricate topographic silicon oxide patterns. By control of the thickness of PDMS layers, silicon oxide patterns having various line widths were fabricated. The silicon oxide topographic patterns were used to direct the self-assembly of polystyrene-block-poly(2-vinylpyridine) (PS-b-P2VP) block copolymer thin films via solvent annealing process. A highly ordered PS-b-P2VP micellar structure was used to let gold precursor complex with P2VP chains, and followed by oxygen plasma treatment. When the PS-b-P2VP thin films containing gold salts were exposed to oxygen plasma environments, gold salts were reduced to pure gold nanoparticles without changing high degree of lateral order, while polymers were completely degraded. As the width of trough and crest in topographic patterns increases, the number of gold arrays and size of gold nanoparticles are tuned. In the final step, the silicon oxide topographic patterns were selectively removed by wet etching process without changing the arrays of gold nanoparticles.

  19. Addictive drugs, arrhythmias, and cardiac inward rectifiers.

    PubMed

    Bébarová, Markéta; Hořáková, Zuzana; Kula, Roman

    2016-06-14

    In many addictive drugs including alcohol and nicotine, proarrhythmic effects were reported. This review provides an overview of the current knowledge in this field (with a focus on the inward rectifier potassium currents) to promote the lacking data and appeal for their completion, thus, to improve understanding of the proarrhythmic potential of addictive drugs.

  20. 46 CFR 183.360 - Semiconductor rectifier systems.

    Code of Federal Regulations, 2013 CFR

    2013-10-01

    ... 46 Shipping 7 2013-10-01 2013-10-01 false Semiconductor rectifier systems. 183.360 Section 183.360... TONS) ELECTRICAL INSTALLATION Power Sources and Distribution Systems § 183.360 Semiconductor rectifier systems. (a) Each semiconductor rectifier system must have an adequate heat removal system that...

  1. 46 CFR 120.360 - Semiconductor rectifier systems.

    Code of Federal Regulations, 2013 CFR

    2013-10-01

    ... 46 Shipping 4 2013-10-01 2013-10-01 false Semiconductor rectifier systems. 120.360 Section 120.360... INSTALLATION Power Sources and Distribution Systems § 120.360 Semiconductor rectifier systems. (a) Each semiconductor rectifier system must have an adequate heat removal system that prevents overheating. (b) Where...

  2. 46 CFR 120.360 - Semiconductor rectifier systems.

    Code of Federal Regulations, 2014 CFR

    2014-10-01

    ... 46 Shipping 4 2014-10-01 2014-10-01 false Semiconductor rectifier systems. 120.360 Section 120.360... INSTALLATION Power Sources and Distribution Systems § 120.360 Semiconductor rectifier systems. (a) Each semiconductor rectifier system must have an adequate heat removal system that prevents overheating. (b) Where...

  3. 46 CFR 183.360 - Semiconductor rectifier systems.

    Code of Federal Regulations, 2012 CFR

    2012-10-01

    ... 46 Shipping 7 2012-10-01 2012-10-01 false Semiconductor rectifier systems. 183.360 Section 183.360... TONS) ELECTRICAL INSTALLATION Power Sources and Distribution Systems § 183.360 Semiconductor rectifier systems. (a) Each semiconductor rectifier system must have an adequate heat removal system that...

  4. 46 CFR 183.360 - Semiconductor rectifier systems.

    Code of Federal Regulations, 2014 CFR

    2014-10-01

    ... 46 Shipping 7 2014-10-01 2014-10-01 false Semiconductor rectifier systems. 183.360 Section 183.360... TONS) ELECTRICAL INSTALLATION Power Sources and Distribution Systems § 183.360 Semiconductor rectifier systems. (a) Each semiconductor rectifier system must have an adequate heat removal system that...

  5. 46 CFR 120.360 - Semiconductor rectifier systems.

    Code of Federal Regulations, 2012 CFR

    2012-10-01

    ... 46 Shipping 4 2012-10-01 2012-10-01 false Semiconductor rectifier systems. 120.360 Section 120.360... INSTALLATION Power Sources and Distribution Systems § 120.360 Semiconductor rectifier systems. (a) Each semiconductor rectifier system must have an adequate heat removal system that prevents overheating. (b) Where...

  6. 46 CFR 120.360 - Semiconductor rectifier systems.

    Code of Federal Regulations, 2011 CFR

    2011-10-01

    ... 46 Shipping 4 2011-10-01 2011-10-01 false Semiconductor rectifier systems. 120.360 Section 120.360... INSTALLATION Power Sources and Distribution Systems § 120.360 Semiconductor rectifier systems. (a) Each semiconductor rectifier system must have an adequate heat removal system that prevents overheating. (b) Where...

  7. 46 CFR 120.360 - Semiconductor rectifier systems.

    Code of Federal Regulations, 2010 CFR

    2010-10-01

    ... 46 Shipping 4 2010-10-01 2010-10-01 false Semiconductor rectifier systems. 120.360 Section 120.360... INSTALLATION Power Sources and Distribution Systems § 120.360 Semiconductor rectifier systems. (a) Each semiconductor rectifier system must have an adequate heat removal system that prevents overheating. (b) Where...

  8. Fabrication of ultrathin and highly uniform silicon on insulator by numerically controlled plasma chemical vaporization machining.

    PubMed

    Sano, Yasuhisa; Yamamura, Kazuya; Mimura, Hidekazu; Yamauchi, Kazuto; Mori, Yuzo

    2007-08-01

    Metal-oxide semiconductor field-effect transistors fabricated on a silicon-on-insulator (SOI) wafer operate faster and at a lower power than those fabricated on a bulk silicon wafer. Scaling down, which improves their performances, demands thinner SOI wafers. In this article, improvement on the thinning of SOI wafers by numerically controlled plasma chemical vaporization machining (PCVM) is described. PCVM is a gas-phase chemical etching method in which reactive species generated in atmospheric-pressure plasma are used. Some factors affecting uniformity are investigated and methods for improvements are presented. As a result of thinning a commercial 8 in. SOI wafer, the initial SOI layer thickness of 97.5+/-4.7 nm was successfully thinned and made uniform at 7.5+/-1.5 nm.

  9. Gate-controlled-diodes in silicon-on-sapphire: A computer simulation

    NASA Technical Reports Server (NTRS)

    Gassaway, J. D.

    1974-01-01

    The computer simulation of the electrical behavior of a Gate-Controlled Diode (GCD) fabricated in Silicon-On-Sapphire (SOS) was described. A procedure for determining lifetime profiles from capacitance and reverse current measurements on the GCD was established. Chapter 1 discusses the SOS structure and points out the need of lifetime profiles to assist in device design for GCD's and bipolar transistors. Chapter 2 presents the one-dimensional analytical formula for electrostatic analysis of the SOS-GCD which are useful for data interpretation and setting boundary conditions on a simplified two-dimensional analysis. Chapter 3 gives the results of a two-dimensional analysis which treats the field as one-dimensional until the silicon film is depleted and the field penetrates the sapphire substrate. Chapter 4 describes a more complete two-dimensional model and gives results of programs implementing the model.

  10. Photoluminescent logic gate controlled by the optical Kerr effect exhibited by porous silicon

    NASA Astrophysics Data System (ADS)

    de la Mora, M. B.; Torres-Torres, C.; Nava, R.; Trejo-Valdez, M.; Reyes-Esqueda, J. A.

    2014-07-01

    The magnitude of the third order optical susceptibility exhibited by porous silicon monolayers was measured by a non-degenerated vectorial two-wave interaction. Optical irradiations at 488 nm and 532 nm wavelengths were employed to carry out the nonlinear optical experiments. Compared to bulk silicon material, a noticeable enhancement in the third order nonlinear optical response was identified. Photoluminescence and photoconductive properties were evaluated for the two studied wavelengths. The photoluminescent logic gate function AND was experimentally demonstrated using as a control a reflective optical Kerr gate configuration. A perceptible contribution for the third order optical nonlinearities seems to be related to the optical Kerr effect originated by excited states population. A two-level model was considered in order to describe the observed optical behavior.

  11. Development of uniform density control with self-assembled colloidal gold nanoparticles on a modified silicon substrate.

    PubMed

    Kang, ChanKyu; Ashurst, Robert W; Shim, Jae-Jin; Huh, Yun Suk; Roh, Changhyun

    2014-10-01

    Here, we present a simple method for controlling the density of Au nanoparticles (Au NPs) on a modified silicon substrate, by destabilizing the colloidal Au NPs with 3-mercaptopropyltrimethoxylsilane (3-MPTMS) for microelectromechanical-system-based applications to reduce tribological issues. A silicon surface was pretreated with a 3-MPTMS solution, immediately after which thiolated Au NPs were added to it, resulting in their uniform deposition on the silicon substrate. Without any material property change of the colloidal Au NPs, we observed the formation of large clusters Au NPs on the modified silicon surface. Analysis by scanning electron microscopy with energy dispersive X-ray spectroscopy indicated that the addition of 3-MPTMS resulted in an alternation of the chemical characteristics of the solution. Atomic force microscopy imaging supported the notion that silicon surface modification is the most important factor on tribological properties of materials along with ligand-modified Au NPs. The density of Au NPs on a silicon surface was significantly dependent on several factors, including the concentration of colloidal Au NPs, deposition time, and concentration of 3-MPTMS solution, while temperature range which was used throughout experiment was determined to have no significant effect. A relatively high density of Au NPs forms on the silicon surface as the concentrations of Au NPs and 3-MPTMS are increased. In addition, the maximum deposition of Au NPs on silicon wafer was observed at 3 h, while the effects of temperature variation were minimal.

  12. Polypropylene vs silicone Ahmed valve with adjunctive mitomycin C in paediatric age group: a prospective controlled study

    PubMed Central

    El Sayed, Y; Awadein, A

    2013-01-01

    Purpose To compare the results of silicone and polypropylene Ahmed glaucoma valves (AGV) implanted during the first 10 years of life. Methods A prospective study was performed on 50 eyes of 33 patients with paediatric glaucoma. Eyes were matched to either polypropylene or silicone AGV. In eyes with bilateral glaucoma, one eye was implanted with polypropylene and the other eye was implanted with silicone AGV. Results Fifty eyes of 33 children were reviewed. Twenty five eyes received a polypropylene valve, and 25 eyes received a silicone valve. Eyes implanted with silicone valves achieved a significantly lower intraocular pressure (IOP) compared with the polypropylene group at 6 months, 1 year, and 2 years postoperatively. The average survival time was significantly longer (P=0.001 by the log-rank test) for the silicone group than for the polypropylene group and the cumulative probability of survival by the log-rank test at the end of the second year was 80% (SE: 8.0, 95% confidence interval (CI): 64–96%) in the silicone group and 56% (SE: 9.8, 95% CI: 40–90%) in the polypropylene group. The difference in the number of postoperative interventions and complications between both groups was statistically insignificant. Conclusion Silicone AGVs can achieve better IOP control, and longer survival with less antiglaucoma drops compared with polypropylene valves in children younger than 10 years. PMID:23579403

  13. Cytotoxicity control of silicon nanoparticles by biopolymer coating and ultrasound irradiation for cancer theranostic applications

    NASA Astrophysics Data System (ADS)

    Sviridov, A. P.; Osminkina, L. A.; Kharin, A. Yu; Gongalsky, M. B.; Kargina, J. V.; Kudryavtsev, A. A.; Bezsudnova, Yu I.; Perova, T. S.; Geloen, A.; Lysenko, V.; Timoshenko, V. Yu

    2017-03-01

    Silicon nanoparticles (SiNPs) prepared by mechanical grinding of luminescent porous silicon were coated with a biopolymer (dextran) and investigated as a potential theranostic agent for bioimaging and sonodynamic therapy. Transmission electron microscopy, photoluminescence and Raman scattering measurements of dextran-coated SiNPs gave evidence of their enhanced stability in water. In vitro experiments confirmed the lower cytotoxicity of the dextran-coated NPs in comparison with uncoated ones, especially for high concentrations of about 2 mg ml‑1. Efficient uptake of the NPs by cancer cells was found using bioimaging in the optical transmittance and photoluminescence modes. Treatment of the cells with uptaken SiNPs by therapeutic ultrasound for 5–20 min resulted in a strong decrease in the number of living cells, while the total number of cells remained nearly unchanged. The obtained data indicate a ‘mild’ effect of the combined action of ultrasonic irradiation and SiNPs on cancer cells. The observed results reveal new opportunities for controlling the photoluminescent and sonosensitizing properties of silicon-based NPs for applications in the diagnostics and mild therapy of cancer.

  14. Self- and dopant diffusion in extrinsic boron doped isotopically controlled silicon multilayer structures

    SciTech Connect

    Sharp, Ian D.; Bracht, Hartmut A.; Silvestri, Hughes H.; Nicols, Samuel P.; Beeman, Jeffrey W.; Hansen, John L.; Nylandsted Larsen, Arne; Haller, Eugene E.

    2002-04-01

    Isotopically controlled silicon multilayer structures were used to measure the enhancement of self- and dopant diffusion in extrinsic boron doped silicon. {sup 30}Si was used as a tracer through a multilayer structure of alternating natural Si and enriched {sup 28}Si layers. Low energy, high resolution secondary ion mass spectrometry (SIMS) allowed for simultaneous measurement of self- and dopant diffusion profiles of samples annealed at temperatures between 850 C and 1100 C. A specially designed ion- implanted amorphous Si surface layer was used as a dopant source to suppress excess defects in the multilayer structure, thereby eliminating transient enhanced diffusion (TED) behavior. Self- and dopant diffusion coefficients, diffusion mechanisms, and native defect charge states were determined from computer-aided modeling, based on differential equations describing the diffusion processes. We present a quantitative description of B diffusion enhanced self-diffusion in silicon and conclude that the diffusion of both B and Si is mainly mediated by neutral and singly positively charged self-interstitials under p-type doping. No significant contribution of vacancies to either B or Si diffusion is observed.

  15. Cytotoxicity control of silicon nanoparticles by biopolymer coating and ultrasound irradiation for cancer theranostic applications.

    PubMed

    Sviridov, A P; Osminkina, L A; Kharin, A Yu; Gongansky, M B; Kargina, J V; Kudryavtsev, A A; Bezsudnova, Yu I; Perova, T S; Geloen, A; Lysenko, V; Timoshenko, V Yu

    2017-03-10

    Silicon nanoparticles (SiNPs) prepared by mechanical grinding of luminescent porous silicon were coated with a biopolymer (dextran) and investigated as a potential theranostic agent for bioimaging and sonodynamic therapy. Transmission electron microscopy, photoluminescence and Raman scattering measurements of dextran-coated SiNPs gave evidence of their enhanced stability in water. In vitro experiments confirmed the lower cytotoxicity of the dextran-coated NPs in comparison with uncoated ones, especially for high concentrations of about 2 mg ml(-1). Efficient uptake of the NPs by cancer cells was found using bioimaging in the optical transmittance and photoluminescence modes. Treatment of the cells with uptaken SiNPs by therapeutic ultrasound for 5-20 min resulted in a strong decrease in the number of living cells, while the total number of cells remained nearly unchanged. The obtained data indicate a 'mild' effect of the combined action of ultrasonic irradiation and SiNPs on cancer cells. The observed results reveal new opportunities for controlling the photoluminescent and sonosensitizing properties of silicon-based NPs for applications in the diagnostics and mild therapy of cancer.

  16. Understanding and controlling the step bunching instability in aqueous silicon etching

    NASA Astrophysics Data System (ADS)

    Bao, Hailing

    Chemical etching of silicon has been widely used for more than half a century in the semiconductor industry. It not only forms the basis for current wafer cleaning processes, it also serves as a powerful tool to create a variety of surface morphologies for different applications. Its potential for controlling surface morphology at the atomic scale over micron-size regions is especially appealing. In spite of its wide usage, the chemistry of silicon etching is poorly understood. Many seemingly simple but fundamental questions have not been answered. As a result, the development of new etchants and new etching protocols are based on expensive and tedious trial-and-error experiments. A better understanding of the etching mechanism would direct the rational formulation of new etchants that produce controlled etch morphologies. Particularly, micron-scale step bunches spontaneously develop on the vicinal Si(111) surface etched in KOH or other anisotropic aqueous etchants. The ability to control the size, orientation, density and regularity of these surface features would greatly improve the performance of microelectromechanical devices. This study is directed towards understanding the chemistry and step bunching instability in aqueous anisotropic etching of silicon through a combination of experimental techniques and theoretical simulations. To reveal the cause of step-bunching instability, kinetic Monte Carlo simulations were constructed based on an atomistic model of the silicon lattice and a modified kinematic wave theory. The simulations showed that inhomogeneity was the origin of step-bunching, which was confirmed through STM studies of etch morphologies created under controlled flow conditions. To quantify the size of the inhomogeneities in different etchants and to clarify their effects, a five-parallel-trench pattern was fabricated. This pattern used a nitride mask to protect most regions of the wafer; five evenly spaced etch windows were opened to the Si(110

  17. Large area and structured epitaxial graphene produced by confinement controlled sublimation of silicon carbide.

    PubMed

    de Heer, Walt A; Berger, Claire; Ruan, Ming; Sprinkle, Mike; Li, Xuebin; Hu, Yike; Zhang, Baiqian; Hankinson, John; Conrad, Edward

    2011-10-11

    After the pioneering investigations into graphene-based electronics at Georgia Tech, great strides have been made developing epitaxial graphene on silicon carbide (EG) as a new electronic material. EG has not only demonstrated its potential for large scale applications, it also has become an important material for fundamental two-dimensional electron gas physics. It was long known that graphene mono and multilayers grow on SiC crystals at high temperatures in ultrahigh vacuum. At these temperatures, silicon sublimes from the surface and the carbon rich surface layer transforms to graphene. However the quality of the graphene produced in ultrahigh vacuum is poor due to the high sublimation rates at relatively low temperatures. The Georgia Tech team developed growth methods involving encapsulating the SiC crystals in graphite enclosures, thereby sequestering the evaporated silicon and bringing growth process closer to equilibrium. In this confinement controlled sublimation (CCS) process, very high-quality graphene is grown on both polar faces of the SiC crystals. Since 2003, over 50 publications used CCS grown graphene, where it is known as the "furnace grown" graphene. Graphene multilayers grown on the carbon-terminated face of SiC, using the CCS method, were shown to consist of decoupled high mobility graphene layers. The CCS method is now applied on structured silicon carbide surfaces to produce high mobility nano-patterned graphene structures thereby demonstrating that EG is a viable contender for next-generation electronics. Here we present for the first time the CCS method that outperforms other epitaxial graphene production methods.

  18. Large area and structured epitaxial graphene produced by confinement controlled sublimation of silicon carbide

    PubMed Central

    de Heer, Walt A.; Berger, Claire; Ruan, Ming; Sprinkle, Mike; Li, Xuebin; Hu, Yike; Zhang, Baiqian; Hankinson, John; Conrad, Edward

    2011-01-01

    After the pioneering investigations into graphene-based electronics at Georgia Tech, great strides have been made developing epitaxial graphene on silicon carbide (EG) as a new electronic material. EG has not only demonstrated its potential for large scale applications, it also has become an important material for fundamental two-dimensional electron gas physics. It was long known that graphene mono and multilayers grow on SiC crystals at high temperatures in ultrahigh vacuum. At these temperatures, silicon sublimes from the surface and the carbon rich surface layer transforms to graphene. However the quality of the graphene produced in ultrahigh vacuum is poor due to the high sublimation rates at relatively low temperatures. The Georgia Tech team developed growth methods involving encapsulating the SiC crystals in graphite enclosures, thereby sequestering the evaporated silicon and bringing growth process closer to equilibrium. In this confinement controlled sublimation (CCS) process, very high-quality graphene is grown on both polar faces of the SiC crystals. Since 2003, over 50 publications used CCS grown graphene, where it is known as the “furnace grown” graphene. Graphene multilayers grown on the carbon-terminated face of SiC, using the CCS method, were shown to consist of decoupled high mobility graphene layers. The CCS method is now applied on structured silicon carbide surfaces to produce high mobility nano-patterned graphene structures thereby demonstrating that EG is a viable contender for next-generation electronics. Here we present for the first time the CCS method that outperforms other epitaxial graphene production methods. PMID:21960446

  19. Control of crystalline volume and nano crystal grain size in nanocrystalline silicon thin film deposited by PECVD

    NASA Astrophysics Data System (ADS)

    Bui, Thanh Tung; Chien Dang, Mau

    2014-11-01

    Application of the radio frequency plasma enhanced chemical vapor deposition (RF-PECVD) technique was studied to fabricate amorphous and nanocrystalline silicon (a-Si and nc-Si) thin films for photovoltaic devices at substrate temperature of 200 °C. Amorphous-crystalline transition of silicon thin films in working conditions of PECVD system was shown as a function of deposition parameters, i.e., dilution ratio of silane (SiH4) in hydrogen, total gas pressure during deposition and RF excitation power density. The crystalline volume as well as grain size of nanocrystalline silicon films could be successfully controlled by tuning those deposition parameters. Micro Raman scattering spectroscopy and spectroscopic ellipsometry (SE) methods were used to characterize the structure and crystallization of the deposited silicon thin films. We could make nc-Si thin films with various crystalline volumes. Nc-Si grain size was also controlled and was in the range of 3-5 nm.

  20. Controlling etch properties of silicon-based antireflective spin-on hardmask materials

    NASA Astrophysics Data System (ADS)

    Kim, Sang Kyun; Cho, Hyeon Mo; Woo, Changsoo; Koh, Sang Ran; Kim, Mi-Young; Yoon, Hui Chan; Lee, Woojin; Shin, Seung-Wook; Kim, Jong Seob; Chang, Tuwon

    2009-03-01

    In the recent semiconductor mass production, the tri-layer hardmask system has become crucial for successful patterning in many applications. Silicon-based anti-reflective spin-on hardmask (Si-SOH), which can be built by spin-on coating, is desirable in terms of mass production throughput and the overall cost of ownership. As the pattern size shrinks, the thickness of photoresist also becomes thinner, which forces the thickness of Si-SOH to be thinner resulting in a tighter thickness margin. In this case, controlling optical properties of Si-SOH becomes important in order to achieve low reflectivity in the exposure process. In addition, the tri-layer system can be set up more easily when the etch properties of Si-SOH can be controlled. Previously, we reported papers on silicon-based anti-reflective spin-on hardmask materials for 193 nm lithography, immersion ArF lithography, and optimization of optical properties of Si-SOH. In this paper, the technique for controlling etch properties of Si-SOH by a different type of monomer is described. To control etch properties in the same resin platform, the synthesis method was modified. Characterization of the Si-SOH synthesized by the new technique and the lithographic performance using this material are described in detail.

  1. The rectified second law of thermodynamics.

    PubMed

    Ben-Amotz, Dor; Honig, J M

    2006-10-12

    Equilibrium thermodynamics is combined with Jarzynski's irreversible work theorem to quantify the excess entropy produced by irreversible processes. The resulting rectified form of the second law parallels the first law, in the sense that it facilitates the experimental measurement of excess entropy changes resulting from irreversible work and heat exchanges, just as the first law quantifies energy changes produced by either reversible or irreversible work and heat exchanges. The general form of the rectified second law is further applied to a broad class of quasi-static irreverisble (QSI) processes, for which all of the thermodynamic functions of both the system and surroundings remain continuously well-defined, thus facilitating excess entropy measurements by integrating exact differential functions along QSI paths. The results are illustrated by calculating the mechanical and thermal excess entropy produced by the irreversible unfolding of an RNA molecule.

  2. LabVIEW-based control and acquisition system for the dosimetric characterization of a silicon strip detector

    NASA Astrophysics Data System (ADS)

    Ovejero, M. C.; Pérez Vega-Leal, A.; Gallardo, M. I.; Espino, J. M.; Selva, A.; Cortés-Giraldo, M. A.; Arráns, R.

    2017-02-01

    The aim of this work is to present a new data acquisition, control, and analysis software system written in LabVIEW. This system has been designed to obtain the dosimetry of a silicon strip detector in polyethylene. It allows the full automation of the experiments and data analysis required for the dosimetric characterization of silicon detectors. It becomes a useful tool that can be applied in the daily routine check of a beam accelerator.

  3. LabVIEW-based control and acquisition system for the dosimetric characterization of a silicon strip detector.

    PubMed

    Ovejero, M C; Pérez Vega-Leal, A; Gallardo, M I; Espino, J M; Selva, A; Cortés-Giraldo, M A; Arráns, R

    2017-02-01

    The aim of this work is to present a new data acquisition, control, and analysis software system written in LabVIEW. This system has been designed to obtain the dosimetry of a silicon strip detector in polyethylene. It allows the full automation of the experiments and data analysis required for the dosimetric characterization of silicon detectors. It becomes a useful tool that can be applied in the daily routine check of a beam accelerator.

  4. Optimal locomotion of mechanical rectifier systems

    NASA Astrophysics Data System (ADS)

    Blair, Justin T.

    Vehicles utilizing animal locomotion mechanisms may possess increased performance parameters and the ability to overcome more difficult terrain than conventional wheel or propeller driven vehicles. The essential mechanism underlying animal locomotion can be viewed as mechanical rectification that converts periodic body movements to thrust force through interactions with the environment. This dissertation defines a general class of mechanical rectifiers as multi-body systems equipped with such thrust generation mechanisms. A general model is developed from the Euler-Lagrange equation and simplified by assuming small body oscillations around a given nominal posture. The model reveals that the rectifying dynamics can be captured by a bilinear (but not linear) term of body shape variables. An optimal gait problem is formulated for the bilinear rectifier model as a minimization of a quadratic cost function over the set of periodic functions subject to a constraint on the average locomotion velocity. We prove that a globally optimal solution is given by a harmonic gait that can be found by generalized eigenvalue computation with a line search over cycle frequencies. We verify the solution method through case studies of a two dimensional chain of links for which snake-like undulations and jellyfish-like flapping gaits are found to be optimal, and obtain analytical insights into determinants of optimal gaits from a simple disk-mass rectifier system. Lastly, we develop a dynamic model for batoid swimming featuring a 6 degree-of-freedom main body (position and orientation), with independent wing deformation (described as the motion of many discrete points in the body-fixed coordinate frame), and calculate various gaits. Multiple wing shapes and optimality criteria are considered, such as the maximum thrust to deflection ratio or minimum input power, and the resulting gaits are compared.

  5. Improved quality control of silicon wafers using novel off-line air pocket image analysis

    NASA Astrophysics Data System (ADS)

    Valley, John F.; Sanna, M. Cristina

    2014-08-01

    Air pockets (APK) occur randomly in Czochralski (Cz) grown silicon (Si) crystals and may become included in wafers after slicing and polishing. Previously the only APK of interest were those that intersected the front surface of the wafer and therefore directly impacted device yield. However mobile and other electronics have placed new demands on wafers to be internally APK-free for reasons of thermal management and packaging yield. We present a novel, recently patented, APK image processing technique and demonstrate the use of that technique, off-line, to improve quality control during wafer manufacturing.

  6. Electrically conductive, black thermal control coatings for space craft application. II - Silicone matrix formulation

    NASA Technical Reports Server (NTRS)

    Hribar, V. F.; Bauer, J. L.; O'Donnell, T. P.

    1986-01-01

    Five black electrically conductive thermal-control coatings have been formulated and tested for application on the Galileo spacecraft. The coatings consisted of organic and inorganic systems applied on titanium and aluminum surfaces. The coatings were tested under simulated space environment conditions. Coated specimens were subjected to thermal radiation and convective and conductive heating from -196 to 538 C. Mechanical, physical, thermal, electrical, and optical characteristics, formulation, mixing, application, surface preparation of substrates, and a method of determining electrical resistance are presented for the silicone matrix formulation designated as GF-580.

  7. (AASERT-93) Field-Effect-Controlled, Coulomb-BlocKage Single-Electron Transistor in Silicon.

    DTIC Science & Technology

    2007-11-02

    imludCigdibei m , f lei reviewingI Ifistrctflnfl iiv thing~ rIUrmg Ol a m"su’e. gi~wr~ng LrIs fl Ifanil fbe data needed, and c~fO atingbl aw~d...AASERT-93) Field-Effect-Controlled, Coulomb -Blockage Single-Electron Transistor in Silicon .61103D 1-. AUTHO-R(S) 3484/TS Professor Dimitri.Antoniadis...limits of X-ray nanolithography for real devices was found. Novel I coulomb -blockade devices have been fabricated using this modified process

  8. Pore Size Control of Ultra-thin Silicon Membranes by Rapid Thermal Carbonization

    PubMed Central

    Fang, David Z.; Striemer, Christopher C.; Gaborski, Thomas R.; McGrath, James L.; Fauchet, Philippe M.

    2010-01-01

    Rapid thermal carbonization in a dilute acetylene (C2H2) atmosphere has been used to chemically modify and precisely tune the pore size of ultrathin porous nanocrystalline silicon (pnc-Si). The magnitude of size reduction was controlled by varying the process temperature and time. Under certain conditions, the carbon coating displayed atomic ordering indicative of graphene layer formation conformal to the pore walls. Initial experiments show that carbonized membranes follow theoretical predictions for hydraulic permeability and retain the precise separation capabilities of untreated membranes. PMID:20839831

  9. Precise control of the coupling coefficient through destructive interference in silicon waveguide Bragg gratings.

    PubMed

    Wang, Xu; Wang, Yun; Flueckiger, Jonas; Bojko, Richard; Liu, Amy; Reid, Adam; Pond, James; Jaeger, Nicolas A F; Chrostowski, Lukas

    2014-10-01

    We present waveguide Bragg gratings with misaligned sidewall corrugations on a silicon-on-insulator platform. The grating strength can be tuned by varying the misalignment between the corrugations on the two sidewalls. This approach allows for a wide range of grating coupling coefficients to be achieved with precise control, and substantially reduces the effects of quantization error due to the finite mask grid size. The experimental results are in very good agreement with simulations using the finite-difference time-domain (FDTD) method.

  10. Initial Rotor Position Estimation of Half-Wave Rectified Brushless Synchronous Motor

    NASA Astrophysics Data System (ADS)

    Abe, Takashi; Oyama, Jun; Higuchi, Tsuyoshi

    This paper presents an initial rotor position estimation of Half-Wave Rectified Brushless Synchronous Motor. In the previous paper, we proposed this motor as AC servo motor, which is based on the half-wave rectified brushless excitation principle. The basic principle of this estimation technique utilizes the dependence of inductance on the rotor position. The bias frequency component of half-Wave rectified brushless excitation is used to estimate the rotor position error. The magnetic pole is discriminated by the switching condition of the diode inserted into the rotor field winding. This estimation technique is confirmed by simulation include inverter circuit, control program and motor model. Finally, the effectiveness of the proposed estimation technique has been verified by experiments.

  11. Controlling the spectrum of photons generated on a silicon nanophotonic chip

    PubMed Central

    Kumar, Ranjeet; Ong, Jun Rong; Savanier, Marc; Mookherjea, Shayan

    2014-01-01

    Directly modulated semiconductor lasers are widely used, compact light sources in optical communications. Semiconductors can also be used to generate nonclassical light; in fact, CMOS-compatible silicon chips can be used to generate pairs of single photons at room temperature. Unlike the classical laser, the photon-pair source requires control over a two-dimensional joint spectral intensity (JSI) and it is not possible to process the photons separately, as this could destroy the entanglement. Here we design a photon-pair source, consisting of planar lightwave components fabricated using CMOS-compatible lithography in silicon, which has the capability to vary the JSI. By controlling either the optical pump wavelength, or the temperature of the chip, we demonstrate the ability to select different JSIs, with a large variation in the Schmidt number. Such control can benefit high-dimensional communications where detector-timing constraints can be relaxed by realizing a large Schmidt number in a small frequency range. PMID:25410792

  12. Silicon spintronics.

    PubMed

    Jansen, Ron

    2012-04-23

    Worldwide efforts are underway to integrate semiconductors and magnetic materials, aiming to create a revolutionary and energy-efficient information technology in which digital data are encoded in the spin of electrons. Implementing spin functionality in silicon, the mainstream semiconductor, is vital to establish a spin-based electronics with potential to change information technology beyond imagination. Can silicon spintronics live up to the expectation? Remarkable advances in the creation and control of spin polarization in silicon suggest so. Here, I review the key developments and achievements, and describe the building blocks of silicon spintronics. Unexpected and puzzling results are discussed, and open issues and challenges identified. More surprises lie ahead as silicon spintronics comes of age.

  13. Electrical detection of dengue virus (DENV) DNA oligomer using silicon nanowire biosensor with novel molecular gate control.

    PubMed

    Nuzaihan M N, M; Hashim, U; Md Arshad, M K; Kasjoo, S R; Rahman, S F A; Ruslinda, A R; Fathil, M F M; Adzhri, R; Shahimin, M M

    2016-09-15

    In this paper, a silicon nanowire biosensor with novel molecular gate control has been demonstrated for Deoxyribonucleic acid (DNA) detection related to dengue virus (DENV). The silicon nanowire was fabricated using the top-down nanolithography approach, through nanostructuring of silicon-on-insulator (SOI) layers achieved by combination of the electron-beam lithography (EBL), plasma dry etching and size reduction processes. The surface of the fabricated silicon nanowire was functionalized by means of a three-step procedure involving surface modification, DNA immobilization and hybridization. This procedure acts as a molecular gate control to establish the electrical detection for 27-mers base targets DENV DNA oligomer. The electrical detection is based on the changes in current, resistance and conductance of the sensor due to accumulation of negative charges added by the immobilized probe DNA and hybridized target DNA. The sensitivity of the silicon nanowire biosensors attained was 45.0µAM(-1), which shows a wide-range detection capability of the sensor with respect to DNA. The limit of detection (LOD) achieved was approximately 2.0fM. The demonstrated results show that the silicon nanowire has excellent properties for detection of DENV with outstanding repeatability and reproducibility performances.

  14. Energy-harvesting shock absorber with a mechanical motion rectifier

    NASA Astrophysics Data System (ADS)

    Li, Zhongjie; Zuo, Lei; Kuang, Jian; Luhrs, George

    2013-02-01

    Energy-harvesting shock absorbers are able to recover the energy otherwise dissipated in the suspension vibration while simultaneously suppressing the vibration induced by road roughness. They can work as a controllable damper as well as an energy generator. An innovative design of regenerative shock absorbers is proposed in this paper, with the advantage of significantly improving the energy harvesting efficiency and reducing the impact forces caused by oscillation. The key component is a unique motion mechanism, which we called ‘mechanical motion rectifier (MMR)’, to convert the oscillatory vibration into unidirectional rotation of the generator. An implementation of a MMR-based harvester with high compactness is introduced and prototyped. A dynamic model is created to analyze the general properties of the motion rectifier by making an analogy between mechanical systems and electrical circuits. The model is capable of analyzing electrical and mechanical components at the same time. Both simulation and experiments are carried out to verify the modeling and the advantages. The prototype achieved over 60% efficiency at high frequency, much better than conventional regenerative shock absorbers in oscillatory motion. Furthermore, road tests are done to demonstrate the feasibility of the MMR shock absorber, in which more than 15 Watts of electricity is harvested while driving at 15 mph on a smooth paved road. The MMR-based design can also be used for other applications of vibration energy harvesting, such as from tall buildings or long bridges.

  15. Silicon Carbide MOSFET-Based Switching Power Amplifier for Precision Magnet Control

    NASA Astrophysics Data System (ADS)

    Miller, Kenneth; Ziemba, Timothy; Prager, James; Picard, Julian

    2016-10-01

    Eagle Harbor Technologies, Inc. (EHT) is using the latest in solid-state switching technologies to advance the state-of-the-art in magnet control for fusion science. Silicon carbide (SiC) MOSFETs offer advantages over IGBTs including lower drive energy requirements, lower conduction and switching losses, and higher switching frequency capabilities. When comparing SiC and traditional silicon-based MOSFETs, SiC MOSFETs provide higher current carrying capability allowing for smaller package weights and sizes and lower operating temperature. To validate the design, EHT has developed a low-power switching power amplifier (SPA), which has been used for precision control of magnetic fields, including rapidly changing the fields in coils. This design has been incorporated in to a high power SPA, which has been bench tested. This high power SPA will be tested at the Helicity Injected Torus (HIT) at the University of Washington. Following successful testing, EHT will produce enough SiC MOSFET-based SPAs to replace all of the units at HIT, which allows for higher frequency operation and an overall increase in pulsed current levels.

  16. Control of the Pore Texture in Nanoporous Silicon via Chemical Dissolution.

    PubMed

    Secret, Emilie; Wu, Chia-Chen; Chaix, Arnaud; Galarneau, Anne; Gonzalez, Philippe; Cot, Didier; Sailor, Michael J; Jestin, Jacques; Zanotti, Jean-Marc; Cunin, Frédérique; Coasne, Benoit

    2015-07-28

    The surface and textural properties of porous silicon (pSi) control many of its physical properties essential to its performance in key applications such as optoelectronics, energy storage, luminescence, sensing, and drug delivery. Here, we combine experimental and theoretical tools to demonstrate that the surface roughness at the nanometer scale of pSi can be tuned in a controlled fashion using partial thermal oxidation followed by removal of the resulting silicon oxide layer with hydrofluoric acid (HF) solution. Such a process is shown to smooth the pSi surface by means of nitrogen adsorption, electron microscopy, and small-angle X-ray and neutron scattering. Statistical mechanics Monte Carlo simulations, which are consistent with the experimental data, support the interpretation that the pore surface is initially rough and that the oxidation/oxide removal procedure diminishes the surface roughness while increasing the pore diameter. As a specific example considered in this work, the initial roughness ξ ∼ 3.2 nm of pSi pores having a diameter of 7.6 nm can be decreased to 1.0 nm following the simple procedure above. This study allows envisioning the design of pSi samples with optimal surface properties toward a specific process.

  17. Precision Control of Thermal Transport in Cryogenic Single-Crystal Silicon Devices

    NASA Technical Reports Server (NTRS)

    Rostem, K.; Chuss, D. T.; Colazo, F. A.; Crowe, E. J.; Denis, K. L.; Lourie, N. P.; Moseley, S. H.; Stevenson, T. R.; Wollack, E. J.

    2014-01-01

    We report on the diffusive-ballistic thermal conductance of multi-moded single-crystal silicon beams measured below 1 K. It is shown that the phonon mean-free-path is a strong function of the surface roughness characteristics of the beams. This effect is enhanced in diffuse beams with lengths much larger than, even when the surface is fairly smooth, 510 nm rms, and the peak thermal wavelength is 0.6 microns. Resonant phonon scattering has been observed in beams with a pitted surface morphology and characteristic pit depth of 30 nm. Hence, if the surface roughness is not adequately controlled, the thermal conductance can vary significantly for diffuse beams fabricated across a wafer. In contrast, when the beam length is of order, the conductance is dominated by ballistic transport and is effectively set by the beam cross-sectional area. We have demonstrated a uniformity of +/-8% in fractional deviation for ballistic beams, and this deviation is largely set by the thermal conductance of diffuse beams that support the micro-electro-mechanical device and electrical leads. In addition, we have found no evidence for excess specific heat in single-crystal silicon membranes. This allows for the precise control of the device heat capacity with normal metal films. We discuss the results in the context of the design and fabrication of large-format arrays of far-infrared and millimeter wavelength cryogenic detectors.

  18. Precision control of thermal transport in cryogenic single-crystal silicon devices

    SciTech Connect

    Rostem, K.; Chuss, D. T.; Colazo, F. A.; Crowe, E. J.; Denis, K. L.; Lourie, N. P.; Moseley, S. H.; Stevenson, T. R.; Wollack, E. J.

    2014-03-28

    We report on the diffusive-ballistic thermal conductance of multi-moded single-crystal silicon beams measured below 1 K. It is shown that the phonon mean-free-path ℓ is a strong function of the surface roughness characteristics of the beams. This effect is enhanced in diffuse beams with lengths much larger than ℓ, even when the surface is fairly smooth, 5–10 nm rms, and the peak thermal wavelength is 0.6 μm. Resonant phonon scattering has been observed in beams with a pitted surface morphology and characteristic pit depth of 30 nm. Hence, if the surface roughness is not adequately controlled, the thermal conductance can vary significantly for diffuse beams fabricated across a wafer. In contrast, when the beam length is of order ℓ, the conductance is dominated by ballistic transport and is effectively set by the beam cross-sectional area. We have demonstrated a uniformity of ±8% in fractional deviation for ballistic beams, and this deviation is largely set by the thermal conductance of diffuse beams that support the micro-electro-mechanical device and electrical leads. In addition, we have found no evidence for excess specific heat in single-crystal silicon membranes. This allows for the precise control of the device heat capacity with normal metal films. We discuss the results in the context of the design and fabrication of large-format arrays of far-infrared and millimeter wavelength cryogenic detectors.

  19. Theoretical Study of Donor - Spacer - Acceptor Structure Molecule for Molecular Rectifier

    NASA Astrophysics Data System (ADS)

    Mizuseki, Hiroshi; Kenji, Niimura; Belosludov, Rodion; Farajian, Amir; Kawazoe, Yoshiyuki

    2003-03-01

    Recently, the molecular electronics has attracted strong attention as a ``post-silicone technology'' to establish a future nanoscale electronic devices. To realize this molecular device, unimolecular rectifiering function is one of the most important constituents in nanotechnology [C. Majumder, H. Mizuseki, and Y. Kawazoe, Molecular Scale Rectifier: Theoretical Study, J. Phys. Chem. A, 105 (2001) 9454-9459.]. In the present study, the geometric and electronic structure of alkyl derivative C37H50N4O4 (PNX) molecule, (donor - spacer - acceptor), a leading candidate of molecular rectifying device, has been investigated theoretically using ab initio quantum mechanical calculation. The results suggest that in such donor-acceptor molecular complexes, while the lowest unoccupied orbital concentrates on the acceptor subunit, the highest occupied molecular orbital is localized on the donor subunit. The approximate potential differences for optimized PNX molecule have been estimated at the B3PW91/6-311g++(d,p) level of theory, which achieves quite good agreement with experimentally reported results. This study was performed through Special Coordination Funds for Promoting Science and Technology of the Ministry of Education, Culture, Sports, Science and Technology of the Japanese Government.

  20. Coherent control of a strongly driven silicon vacancy optical transition in diamond

    PubMed Central

    Zhou, Yu; Rasmita, Abdullah; Li, Ke; Xiong, Qihua; Aharonovich, Igor; Gao, Wei-bo

    2017-01-01

    The ability to prepare, optically read out and coherently control single quantum states is a key requirement for quantum information processing. Optically active solid-state emitters have emerged as promising candidates with their prospects for on-chip integration as quantum nodes and sources of coherent photons connecting these nodes. Under a strongly driving resonant laser field, such quantum emitters can exhibit quantum behaviour such as Autler–Townes splitting and the Mollow triplet spectrum. Here we demonstrate coherent control of a strongly driven optical transition in silicon vacancy centre in diamond. Rapid optical detection of photons enabled the observation of time-resolved coherent Rabi oscillations and the Mollow triplet spectrum. Detection with a probing transition further confirmed Autler–Townes splitting generated by a strong laser field. The coherence time of the emitted photons is comparable to its lifetime and robust under a very strong driving field, which is promising for the generation of indistinguishable photons. PMID:28218237

  1. Coherent control of a strongly driven silicon vacancy optical transition in diamond

    NASA Astrophysics Data System (ADS)

    Zhou, Yu; Rasmita, Abdullah; Li, Ke; Xiong, Qihua; Aharonovich, Igor; Gao, Wei-Bo

    2017-02-01

    The ability to prepare, optically read out and coherently control single quantum states is a key requirement for quantum information processing. Optically active solid-state emitters have emerged as promising candidates with their prospects for on-chip integration as quantum nodes and sources of coherent photons connecting these nodes. Under a strongly driving resonant laser field, such quantum emitters can exhibit quantum behaviour such as Autler-Townes splitting and the Mollow triplet spectrum. Here we demonstrate coherent control of a strongly driven optical transition in silicon vacancy centre in diamond. Rapid optical detection of photons enabled the observation of time-resolved coherent Rabi oscillations and the Mollow triplet spectrum. Detection with a probing transition further confirmed Autler-Townes splitting generated by a strong laser field. The coherence time of the emitted photons is comparable to its lifetime and robust under a very strong driving field, which is promising for the generation of indistinguishable photons.

  2. Microprocessor-based controller for automatic amorphous silicon solar cells characterization

    SciTech Connect

    Cibils, R.M.; Buitrago, R.H.

    1984-07-01

    This work describes an innovation of traditional systems used in C--V and G--V curve measurements. Although this system has been specifically developed to be used in the characterization of hydrogenated amorphous silicon (a-Si:H), it is useful when information about conductance (G) or capacitance (C) frequency dependence is needed. The highlights of the new system are signal heterodination and microprocessor-based digital control over current range and modulation frequency. The outstanding advantages of this system are significant reduction of operation time and more reliable measurements. Additionally, there is no waste of computer time in the control of data-acquisition operations. The system has an excellent signal-to-noise ratio, a nearly infinite line signal rejection, and a broad frequency range of operation (20 to 10/sup 5/ Hz).

  3. Shape controlled flower-like silicon oxide nanowires and their pH response

    NASA Astrophysics Data System (ADS)

    Shao, Qi; Que, Rong-hui; Shao, Ming-wang; Zhou, Qing; Ma, Dorothy Duo Duo; Lee, Shuit-Tong

    2011-04-01

    Silicon oxide nanowires were synthesized with high-temperature evaporation using silicon monoxide as starting materials and tin and gallium as catalysts. The products take the shape of flowers with petals composed of silicon oxide nanowires. The pH response of the products reveals excellent linear relation due to their vast surface area.

  4. Accurate control of oxygen level in cells during culture on silicone rubber membranes with application to stem cell differentiation.

    PubMed

    Powers, Daryl E; Millman, Jeffrey R; Bonner-Weir, Susan; Rappel, Michael J; Colton, Clark K

    2010-01-01

    Oxygen level in mammalian cell culture is often controlled by placing culture vessels in humidified incubators with a defined gas phase partial pressure of oxygen (pO(2gas)). Because the cells are consuming oxygen supplied by diffusion, a difference between pO(2gas) and that experienced by the cells (pO(2cell)) arises, which is maximal when cells are cultured in vessels with little or no oxygen permeability. Here, we demonstrate theoretically that highly oxygen-permeable silicone rubber membranes can be used to control pO(2cell) during culture of cells in monolayers and aggregates much more accurately and can achieve more rapid transient response following a disturbance than on polystyrene and fluorinated ethylene-propylene copolymer membranes. Cell attachment on silicone rubber was achieved by physical adsorption of fibronectin or Matrigel. We use these membranes for the differentiation of mouse embryonic stem cells to cardiomyocytes and compare the results with culture on polystyrene or on silicone rubber on top of polystyrene. The fraction of cells that are cardiomyocyte-like increases with decreasing pO(2) only when using oxygen-permeable silicone membrane-based dishs, which contract on silicone rubber but not polystyrene. The high permeability of silicone rubber results in pO(2cell) being equal to pO(2gas) at the tissue-membrane interface. This, together with geometric information from histological sections, facilitates development of a model from which the pO(2) distribution within the resulting aggregates is computed. Silicone rubber membranes have significant advantages over polystyrene in controlling pO(2cell), and these results suggest they are a valuable tool for investigating pO(2) effects in many applications, such as stem cell differentiation.

  5. Electro-Optical Rectifier (EOR) Update Study

    DTIC Science & Technology

    1976-05-01

    127 15. SECURITY CLASS, (ol Ihlt report) UNCLASSIFIED 15«. DECLASSIF1 CATION’DOWN GRADING N/A SCHEDULE Distribution limited to U. S . Gov’t...aa •i, SECTION I INTRODUCTION AND SUMMARY E:; S This report documents work performed on the Electro-Optical Rectifier (EOR) Update study. The...6X was also examined. The light source and condenser 1-2 i H i -’ . ;vr_j:. . ,■,.: .■ ,_;i.: S .; J;-\\i:"±i._..E:i.iVi.::J"::v=t

  6. Development of high temperature gallium phosphide rectifiers

    NASA Technical Reports Server (NTRS)

    Craford, M. G.; Keune, D. L.

    1972-01-01

    Large area high performance, GaP rectifiers were fabricated by means of Zn diffusion into vapor phase epitaxial GaP. Devices with an active area of 0.01 sq cm typically exhibit forward voltages of 3 volts for a bias current of 1 ampere and have reverse breakdown voltages of 300 volts for temperatures from 27 C to 400 C. Typical device reverse saturation current at a reverse bias of 150 volts is less than 10 to the minus 9th power amp at 27 C and less than 0.000050 amp at 400 C.

  7. Controlled Release of Dexamethasone From an Intravitreal Delivery System Using Porous Silicon Dioxide

    PubMed Central

    Hou, Huiyuan; Wang, Chengyun; Nan, Kaihui; Freeman, William R.; Sailor, Michael J.; Cheng, Lingyun

    2016-01-01

    Purpose The current study aims to evaluate a porous silicon-based drug delivery system meant for sustained delivery of dexamethasone (Dex) to the vitreous and retina. Methods Dexamethasone was grafted covalently into the pore walls of fully oxidized porous silicon particles (pSiO2-COO-Dex), which then was evaluated for the pharmacological effect of the payload on cultured ARPE19 cells before intravitreal injection. The Dex release profile was investigated in a custom designed dynamic dissolution chamber to mimic the turnover of vitreous fluid in rabbit eyes. Ocular safety, in vivo release, and pharmacodynamics were evaluated in rabbit eyes, and the human VEGF-induced rabbit retinal vascular permeability model. Results Loading efficiency of Dex was 69 ± 9 μg per 1 mg of the pSiO2-COO-Dex particles. Dynamic in vitro release demonstrated a sustained mode when compared to free Dex, with the drug half-life extended by 5 times. The released Dex was unaltered and biologically active. In vivo drug release in rabbit eyes revealed a mode similar to the release seen in vitro, with a vitreous half-life of 11 days. At 2 and 4 weeks after a single intravitreal injection of pSiO2-COO-Dex particles (mean 2.71 ± 0.47 mg), intravitreal 500 ng of VEGF did not induce significant retinal vessel dilation or fluorescein leakage, while these events were observed in the eyes injected with empty pSiO2 particles or with free Dex. The retinal vessel score from fluorescein angiography for the control eyes was double the score for the eyes injected with pSiO2-COO-Dex. No adverse reaction was observed for the eyes injected with drug-loaded pSi particles during the course of the study. Conclusions The porous silicon-based Dex delivery system (pSiO2-COO-Dex) can be administered safely into vitreous without toxicity. Dex release from the porous silicon particles was sustained for 2 months and was effective against VEGF-induced retinal vessel reaction. PMID:26882530

  8. Formation of composite polyacrylamide and silicone substrates for independent control of stiffness and strain.

    PubMed

    Simmons, Chelsey S; Ribeiro, Alexandre J S; Pruitt, Beth L

    2013-02-21

    Cells that line major tissues in the body such as blood vessels, lungs and gastrointestinal tract experience deformation from mechanical strain with our heartbeat, breathing, and other daily activities. Tissues also remodel in both development and disease, changing their mechanical properties. Taken together, cells can experience vastly different mechanical cues resulting from the combination of these interdependent stimuli. To date, most studies of cellular mechanotransduction have been limited to assays in which variations in substrate stiffness and strain were not combined. Here, we address this technological gap by implementing a method that can simultaneously tune both substrate stiffness and mechanical strain. Substrate stiffness is controlled with different monomer and crosslinker ratios during polyacrylamide gel polymerization, and strain is transferred from the underlying silicone platform when stretched. We demonstrate this platform with polyacrylamide gels with elastic moduli at 6 kPa and 20 kPa in combination with two different silicone formulations. The gels remain attached with up to 50% applied strains. To validate strain transfer through the gels into cells, we employ particle-tracking methods and observe strain transmission via cell morphological changes.

  9. Rectifier-less piezoelectric micro power generator

    NASA Astrophysics Data System (ADS)

    Hajati, Arman; Kim, Sang-Gook

    2008-03-01

    A novel thin film lead zirconate titanate Pb(Zr,Ti)O 3 (PZT) MEMS energy harvesting device is designed and developed for powering autonomous wireless sensors. It is designed to harvest energy from parasitic vibrational energy sources and convert it to electrical energy via the piezoelectric effect. The new pie-shaped design for the harvester is about a size of a nickel and has a radical departure from previous design concepts. This design always generates positive tension on the PZT layer and then positive charge output throughout vibration cycles. It produces mono-polarity output charge without using any additional bridge rectifier circuitry, which will be a huge cost saving for commercial production of scaled-up products. Contrary to the high Q cantilever designs, the new design has a low Q, doubly anchored beam design, which provides a wide bandwidth of operational frequency. This will enable more robust power generation even if the frequency spectrum of the source vibration varies unexpectedly. Furthermore, the beam shape is optimized to achieve uniform strain throughout the PZT layer. To authors' knowledge, this is the first self-rectifying piezoelectric power generator at the MEMS-scale

  10. Fundamental Studies and Device Development in Beta Silicon Carbide

    DTIC Science & Technology

    1990-02-28

    The dependence of growth rate of alpha-SiC on alpha- Silicon Carbide substrates and surface morphology on temperature, source gas/carrier gas flow...Hydrogen- Silicon Carbide films during deposition have also been studied. Device research has involved studies of suitable ohmic and rectifying...semiconductor field effect transistor and Impact Avalanche transit-time diodes. Alpha silicon carbide , Semi-conductors, Growth rate, Aluminum dopant, Nitrogen dopant, Ohmic contacts, Schottky contacts, MESFET, MOSFET, IMPATT.

  11. Stress as a governing parameter to control the crystallization of amorphous silicon films by thermal annealing

    NASA Astrophysics Data System (ADS)

    Hazra, Sukti; Sakata, Isao; Yamanaka, Mitsuyuki; Suzuki, Eiichi

    2002-06-01

    We have fabricated nanocrystalline dots by thermal annealing (TA) of thermal chemical-vapor-deposited amorphous silicon (a-Si:H) films. In S. Hazra, I. Sakata, M. Yamanaka, and E. Suzuki, Appl. Phys. Lett. 80, 1159 (2002), we observed that ultrathin a-Si:H films (2-10 nm) are stressed because of the presence of deformed crystallites or paracrystallites. With the increase of thickness, volume fraction of paracrystallites decreased in the films and stress in the films gradually reduced. Therefore, by changing the thickness, we can control the stress in the a-Si:H films and thereby the dimensions (in the range of 5 to 10 nm) as well as volume fractions of nanocrystallites formed by TA. On the other hand, it has been found that relaxed a-Si:H networks form polycrystalline films by TA.

  12. Interfacial Layer Control by Dry Cleaning Technology for Polycrystalline and Single Crystalline Silicon Growth.

    PubMed

    Im, Dong-Hyun; Kong-Soo Lee; Kang, Yoongoo; Jeong, Myoungho; Park, Kwang Wuk; Lee, Soon-Gun; Ma, Jin-Won; Kim, Youngseok; Kim, Bonghyun; Im, Ki-Vin; Lim, Hanjin; Lee, Jeong Yong

    2016-05-01

    Native oxide removal prior to poly-Si contact and epitaxial growth of Si is the most critical technology to ensure process and device performances of poly-Si plugs and selective epitaxial growth (SEG) layers for DRAM, flash memory, and logic device. Recently, dry cleaning process for interfacial oxide removal has attracted a world-wide attention due to its superior passivation properties to conventional wet cleaning processes. In this study, we investigated the surface states of Si substrate during and after dry cleaning process, and the role of atomic elements including fluorine and hydrogen on the properties of subsequent deposited silicon layer using SIMS, XPS, and TEM analysis. The controlling of residual fluorine on the Si surface after dry cleaning is a key factor for clean interface. The mechanism of native oxide re-growth caused by residual fluorine after dry cleaning is proposed based on analytical results.

  13. "Thunderstruck": Plasma-Polymer-Coated Porous Silicon Microparticles As a Controlled Drug Delivery System.

    PubMed

    McInnes, Steven J P; Michl, Thomas D; Delalat, Bahman; Al-Bataineh, Sameer A; Coad, Bryan R; Vasilev, Krasimir; Griesser, Hans J; Voelcker, Nicolas H

    2016-02-01

    Controlling the release kinetics from a drug carrier is crucial to maintain a drug's therapeutic window. We report the use of biodegradable porous silicon microparticles (pSi MPs) loaded with the anticancer drug camphothecin, followed by a plasma polymer overcoating using a loudspeaker plasma reactor. Homogenous "Teflon-like" coatings were achieved by tumbling the particles by playing AC/DC's song "Thunderstruck". The overcoating resulted in a markedly slower release of the cytotoxic drug, and this effect correlated positively with the plasma polymer coating times, ranging from 2-fold up to more than 100-fold. Ultimately, upon characterizing and verifying pSi MP production, loading, and coating with analytical methods such as time-of-flight secondary ion mass spectrometry, scanning electron microscopy, thermal gravimetry, water contact angle measurements, and fluorescence microscopy, human neuroblastoma cells were challenged with pSi MPs in an in vitro assay, revealing a significant time delay in cell death onset.

  14. Voltage mode electronically tunable full-wave rectifier

    NASA Astrophysics Data System (ADS)

    Petrović, Predrag B.; Vesković, Milan; Đukić, Slobodan

    2017-01-01

    The paper presents a new realization of bipolar full-wave rectifier of input sinusoidal signals, employing one MO-CCCII (multiple output current controlled current conveyor), a zero-crossing detector (ZCD), and one resistor connected to fixed potential. The circuit provides the operating frequency up to 10 MHz with increased linearity and precision in processing of input voltage signal, with a very low harmonic distortion. The errors related to the signal processing and errors bound were investigated and provided in the paper. The PSpice simulations are depicted and agree well with the theoretical anticipation. The maximum power consumption of the converter is approximately 2.83 mW, at ±1.2 V supply voltages.

  15. Development of open air silicon deposition technology by silane-free atmospheric pressure plasma enhanced chemical transport under local ambient gas control

    NASA Astrophysics Data System (ADS)

    Naito, Teruki; Konno, Nobuaki; Yoshida, Yukihisa

    2016-07-01

    Open air silicon deposition was performed by combining silane-free atmospheric pressure plasma-enhanced chemical transport and a newly developed local ambient gas control technology. The effect of air contamination on silicon deposition was investigated using a vacuum chamber, and the allowable air contamination level was confirmed to be 3 ppm. The capability of the local ambient gas control head was investigated numerically and experimentally. A safe and clean process environment with air contamination less than 1 ppm was achieved. Combining these technologies, a microcrystalline silicon film was deposited in open air, the properties of which were comparable to those of silicon films deposited in a vacuum chamber.

  16. High-Efficiency Harmonically Terminated Diode and Transistor Rectifiers

    SciTech Connect

    Roberg, M; Reveyrand, T; Ramos, I; Falkenstein, EA; Popovic, Z

    2012-12-01

    This paper presents a theoretical analysis of harmonically terminated high-efficiency power rectifiers and experimental validation on a class-C single Schottky-diode rectifier and a class-F-1 GaN transistor rectifier. The theory is based on a Fourier analysis of current and voltage waveforms, which arise across the rectifying element when different harmonic terminations are presented at its terminals. An analogy to harmonically terminated power amplifier (PA) theory is discussed. From the analysis, one can obtain an optimal value for the dc load given the RF circuit design. An upper limit on rectifier efficiency is derived for each case as a function of the device on-resistance. Measured results from fundamental frequency source-pull measurement of a Schottky diode rectifier with short-circuit terminations at the second and third harmonics are presented. A maximal device rectification efficiency of 72.8% at 2.45 GHz matches the theoretical prediction. A 2.14-GHz GaN HEMT rectifier is designed based on a class-F-1 PA. The gate of the transistor is terminated in an optimal impedance for self-synchronous rectification. Measurements of conversion efficiency and output dc voltage for varying gate RF impedance, dc load, and gate bias are shown with varying input RF power at the drain. The rectifier demonstrates an efficiency of 85% for a 10-W input RF power at the transistor drain with a dc voltage of 30 V across a 98-Omega resistor.

  17. 46 CFR 129.360 - Semiconductor-rectifier systems.

    Code of Federal Regulations, 2010 CFR

    2010-10-01

    ... 46 Shipping 4 2010-10-01 2010-10-01 false Semiconductor-rectifier systems. 129.360 Section 129.360 Shipping COAST GUARD, DEPARTMENT OF HOMELAND SECURITY (CONTINUED) OFFSHORE SUPPLY VESSELS ELECTRICAL INSTALLATIONS Power Sources and Distribution Systems § 129.360 Semiconductor-rectifier systems. (a)...

  18. 46 CFR 129.360 - Semiconductor-rectifier systems.

    Code of Federal Regulations, 2011 CFR

    2011-10-01

    ... 46 Shipping 4 2011-10-01 2011-10-01 false Semiconductor-rectifier systems. 129.360 Section 129.360 Shipping COAST GUARD, DEPARTMENT OF HOMELAND SECURITY (CONTINUED) OFFSHORE SUPPLY VESSELS ELECTRICAL INSTALLATIONS Power Sources and Distribution Systems § 129.360 Semiconductor-rectifier systems. (a)...

  19. Controlled faceting and morphology for light trapping in aluminum-catalyzed silicon nanostructures

    NASA Astrophysics Data System (ADS)

    Hainey, Mel F.; Chen, Chen; Ke, Yue; Black, Marcie R.; Redwing, Joan M.

    2016-10-01

    Aluminum-catalyzed silicon nanopyramids grown using low-pressure chemical vapor deposition (LPCVD) are presented as an approach to silicon surface texturing. The nanopyramids are grown by vapor-liquid-solid growth using aluminum thin films on silicon. Silicon nanowires with hexagonal cross-sections are formed at a growth temperature of 650 °C; as the temperature is increased to 700 °C, the wires become pyramid-shaped with triangular cross-sections. The silicon nanopyramids are single-crystal and grow in the <111>direction with (112) facets, as confirmed by transmission electron microscopy. Pyramid tapering increases with increasing growth temperatures and the pyramid arrays grown at 700 °C show reflectivities between 4 and 6% between 400 nm and 800 nm and appear black to the eye. Based on these results, aluminum-catalyzed nanopyramids present themselves as a plausible alternative to etch-based silicon surface textures.

  20. Morphology-controlled synthesis of poly(oxyethylene)silicone or alkylsilicone surfactants with explicit, atomically defined, branched, hydrophobic tails.

    PubMed

    Gonzaga, Ferdinand; Grande, John B; Brook, Michael A

    2012-01-27

    Silicone surfactants are widely used in commerce because of the unusual surface activity when compared with fluorocarbon or hydrocarbon surfactants. However, most silicone surfactants are comprised of ill-defined mixtures, which preclude the development of an understanding of structure-surface activity relationships. Herein, we report a synthetic strategy that permits exquisite control over silicone structure by using the B(C(6)F(5))(3)-catalyzed condensation of hydro- and alkoxysilanes. Six different, precise hydrophobes were then mated to hydrophilic poly(oxyethylene)s of three different molecular weights by a metal-free click cyclization to generate a library of explicit silicone surfactants. These compounds were calculated to have a relatively linear value range of the hydrophilic-lipophilic balance, ranging from about 8 to about 15. The solubility of some of the compounds was too low to measure a critical micelle concentration (CMC). The others exhibited a broad range of surface tension values at the CMC that depend both on the length of the hydrophilic tail and, more importantly, the nature of the hydrophobic head group. Subtle distinctions in surfactant-related properties, which can be attributed to the three-dimensional structures, can be seen for compounds with comparable numbers of hydrocarbons and silicon groups.

  1. Effect of argon implantation on solid-state dewetting: control of size and surface density of silicon nanocrystals

    NASA Astrophysics Data System (ADS)

    Almadori, Y.; Borowik, Ł.; Chevalier, N.; Barbé, J.-C.

    2017-01-01

    Thermally induced solid-state dewetting of ultra-thin films on insulators is a process of prime interest, since it is capable of easily forming nanocrystals. If no particular treatment is performed to the film prior to the solid-state dewetting, it is already known that the size, the shape and the density of nanocrystals is governed by the initial film thickness. In this paper, we report a novel approach to control the size and the surface density of silicon nanocrystals based on an argon-implantation preliminary surface treatment. Using 7.5 nm thin layers of silicon, we show that increasing the implantation dose tends to form smaller silicon nanocrystals with diameter and height lower than 50 nm and 30 nm, respectively. Concomitantly, the surface density is increased by a factor greater than 20, going from 5 μm-2 to values over 100 μm-2.

  2. TEMPO/viologen electrochemical heterojunction for diffusion-controlled redox mediation: a highly rectifying bilayer-sandwiched device based on cross-reaction at the interface between dissimilar redox polymers.

    PubMed

    Tokue, Hiroshi; Oyaizu, Kenichi; Sukegawa, Takashi; Nishide, Hiroyuki

    2014-03-26

    A couple of totally reversible redox-active molecules, which are different in redox potentials, 2,2,6,6-tetramethylpiperidin-1-oxyl (TEMPO) and viologen (V(2+)), were employed to give rise to a rectified redox conduction effect. Single-layer and bilayer devices were fabricated using polymers containing these sites as pendant groups per repeating unit. The devices were obtained by sandwiching the redox polymer layer(s) with indium tin oxide (ITO)/glass and Pt foil electrodes. Electrochemical measurements of the single-layer device composed of polynorbornene-bearing TEMPO (PTNB) exhibited a diffusion-limited current-voltage response based on the TEMPO(+)/TEMPO exchange reaction, which was almost equivalent to a redox gradient through the PTNB layer depending upon the thickness. The bilayer device gave rise to the current rectification because of the thermodynamically favored cross-reaction between TEMPO(+) and V(+) at the polymer/polymer interface. A current-voltage response obtained for the bilayer device demonstrated a two-step diffusion-limited current behavior as a result of the concurrent V(2+)/V(+) and V(+)/V(0) exchange reactions according to the voltage and suggested that the charge transport process through the device was most likely to be rate-determined by a redox gradient in the polymer layer. Current collection experiments revealed a charge transport balance throughout the device, as a result of the electrochemical stability and robustness of the polymers in both redox states.

  3. Candidate locations for SPS rectifying antennas

    NASA Technical Reports Server (NTRS)

    Eberhardt, A. W.

    1977-01-01

    The feasibility of placing 120 Satellite Power System (SPS) rectifying antenna (rectenna) sites across the U.S. was studied. An initial attempt is made to put two land sites in each state using several land site selection criteria. When only 69 land sites are located, it is decided to put the remaining sites in the sea and sea site selection criteria are identified. An estimated projection of electrical demand distribution for the year 2000 is then used to determine the distribution of these sites along the Pacific, Atlantic, and Gulf Coasts. A methodology for distributing rectenna sites across the country and for fine-tuning exact locations is developed, and recommendations on rectenna design and operations are made.

  4. Ultrafast all-optical coherent control of single silicon vacancy colour centres in diamond

    PubMed Central

    Becker, Jonas Nils; Görlitz, Johannes; Arend, Carsten; Markham, Matthew; Becher, Christoph

    2016-01-01

    Complete control of the state of a quantum bit (qubit) is a fundamental requirement for any quantum information processing (QIP) system. In this context, all-optical control techniques offer the advantage of a well-localized and potentially ultrafast manipulation of individual qubits in multi-qubit systems. Recently, the negatively charged silicon vacancy centre (SiV−) in diamond has emerged as a novel promising system for QIP due to its superior spectral properties and advantageous electronic structure, offering an optically accessible Λ-type level system with large orbital splittings. Here, we report on all-optical resonant as well as Raman-based coherent control of a single SiV− using ultrafast pulses as short as 1 ps, significantly faster than the centre's phonon-limited ground state coherence time of about 40 ns. These measurements prove the accessibility of a complete set of single-qubit operations relying solely on optical fields and pave the way for high-speed QIP applications using SiV− centres. PMID:27841265

  5. Implementation of Statistical Process Control: Evaluating the Mechanical Performance of a Candidate Silicone Elastomer Docking Seal

    NASA Technical Reports Server (NTRS)

    Oravec, Heather Ann; Daniels, Christopher C.

    2014-01-01

    The National Aeronautics and Space Administration has been developing a novel docking system to meet the requirements of future exploration missions to low-Earth orbit and beyond. A dynamic gas pressure seal is located at the main interface between the active and passive mating components of the new docking system. This seal is designed to operate in the harsh space environment, but is also to perform within strict loading requirements while maintaining an acceptable level of leak rate. In this study, a candidate silicone elastomer seal was designed, and multiple subscale test articles were manufactured for evaluation purposes. The force required to fully compress each test article at room temperature was quantified and found to be below the maximum allowable load for the docking system. However, a significant amount of scatter was observed in the test results. Due to the stochastic nature of the mechanical performance of this candidate docking seal, a statistical process control technique was implemented to isolate unusual compression behavior from typical mechanical performance. The results of this statistical analysis indicated a lack of process control, suggesting a variation in the manufacturing phase of the process. Further investigation revealed that changes in the manufacturing molding process had occurred which may have influenced the mechanical performance of the seal. This knowledge improves the chance of this and future space seals to satisfy or exceed design specifications.

  6. Vertically aligned crystalline silicon nanowires with controlled diameters for energy conversion applications: Experimental and theoretical insights

    SciTech Connect

    Razek, Sara Abdel; Swillam, Mohamed A.; Allam, Nageh K.

    2014-05-21

    Vertically orientated single crystalline silicon nanowire (SiNW) arrays with controlled diameters are fabricated via a metal-assisted chemical etching method. The diameter of the fabricated nanowires is controlled by simply varying the etching time in HF/H{sub 2}O{sub 2} electrolytes. The fabricated SiNWs have diameters ranging from 117 to 650 nm and lengths from 8 to 18 μm. The optical measurements showed a significant difference in the reflectance/absorption of the SiNWs with different diameters, where the reflectance increases with increasing the diameter of the SiNWs. The SiNWs showed significant photoluminescence (PL) emission spectra with peaks lying between 380 and 670 nm. The PL intensity increases as the diameter increases and shows red shift for peaks at ∼670 nm. The increase or decrease of reflectivity is coincident with PL intensity at wavelength ∼660 nm. The x-ray diffraction patterns confirm the high crystallinity of the fabricated SiNWs. In addition, the Raman spectra showed a shift in the first order transverse band toward lower frequencies compared to that usually seen for c-Si. Finite difference time domain simulations have been performed to confirm the effect of change of diameter on the optical properties of the nanowires. The simulation results showed good agreement with the experimental results for the SiNWs of different diameters.

  7. Numerically controlled atmospheric-pressure plasma sacrificial oxidation using electrode arrays for improving silicon-on-insulator layer uniformity

    NASA Astrophysics Data System (ADS)

    Takei, Hiroyasu; Yoshinaga, Keinosuke; Matsuyama, Satoshi; Yamauchi, Kazuto; Sano, Yasuhisa

    2015-01-01

    Silicon-on-insulator (SOI) wafers are important semiconductor substrates in high-performance devices. In accordance with device miniaturization requirements, ultrathin and highly uniform top silicon layers (SOI layers) are required. A novel method involving numerically controlled (NC) atmospheric-pressure plasma sacrificial oxidation using an electrode array system was developed for the effective fabrication of an ultrathin SOI layer with extremely high uniformity. Spatial resolution and oxidation properties are the key factors controlling ultraprecision machining. The controllability of plasma oxidation and the oxidation properties of the resulting experimental electrode array system were examined. The results demonstrated that the method improved the thickness uniformity of the SOI layer over one-sixth of the area of an 8-in. wafer area.

  8. Strain and electric field control of hyperfine interactions for donor spin qubits in silicon

    NASA Astrophysics Data System (ADS)

    Usman, M.; Hill, C. D.; Rahman, R.; Klimeck, G.; Simmons, M. Y.; Rogge, S.; Hollenberg, L. C. L.

    2015-06-01

    Control of hyperfine interactions is a fundamental requirement for quantum computing architecture schemes based on shallow donors in silicon. However, at present, there is lacking an atomistic approach including critical effects of central-cell corrections and nonstatic screening of the donor potential capable of describing the hyperfine interaction in the presence of both strain and electric fields in realistically sized devices. We establish and apply a theoretical framework, based on atomistic tight-binding theory, to quantitatively determine the strain and electric-field-dependent hyperfine couplings of donors. Our method is scalable to millions of atoms, and yet captures the strain effects with an accuracy level of DFT method. Excellent agreement with the available experimental data sets allow reliable investigation of the design space of multiqubit architectures, based on both strain only as well as hybrid (strain + field) control of qubits. The benefits of strain are uncovered by demonstrating that a hybrid control of qubits based on (001) compressive strain and in-plane (100 or 010) fields results in higher gate fidelities and or faster gate operations, for all of the four donor species considered (P, As, Sb, and Bi). The comparison between different donor species in strained environments further highlights the trends of hyperfine shifts, providing predictions where no experimental data exists. While faster gate operations are realizable with in-plane fields for P, As, and Sb donors, only for the Bi donor, our calculations predict faster gate response in the presence of both in-plane and out-of-plane fields, truly benefiting from the proposed planar field control mechanism of the hyperfine interactions.

  9. Rigidity of silicone substrates controls cell spreading and stem cell differentiation

    NASA Astrophysics Data System (ADS)

    Vertelov, Grigory; Gutierrez, Edgar; Lee, Sin-Ae; Ronan, Edward; Groisman, Alex; Tkachenko, Eugene

    2016-09-01

    The dependences of spreading and differentiation of stem cells plated on hydrogel and silicone gel substrates on the rigidity and porosity of the substrates have recently been a subject of some controversy. In experiments on human mesenchymal stem cells plated on soft, medium rigidity, and hard silicone gels we show that harder gels are more osteogenic, softer gels are more adipogenic, and cell spreading areas increase with the silicone gel substrate rigidity. The results of our study indicate that substrate rigidity induces some universal cellular responses independently of the porosity or topography of the substrate.

  10. PLGA-Mesoporous Silicon Microspheres for the in Vivo Controlled Temporospatial Delivery of Proteins.

    PubMed

    Minardi, Silvia; Pandolfi, Laura; Taraballi, Francesca; De Rosa, Enrica; Yazdi, Iman K; Liu, Xeuwu; Ferrari, Mauro; Tasciotti, Ennio

    2015-08-05

    In regenerative medicine, the temporospatially controlled delivery of growth factors (GFs) is crucial to trigger the desired healing mechanisms in the target tissues. The uncontrolled release of GFs has been demonstrated to cause severe side effects in the surrounding tissues. The aim of this study was to optimize a translational approach for the fine temporal and spatial control over the release of proteins, in vivo. Hence, we proposed a newly developed multiscale composite microsphere based on a core consisting of the nanostructured silicon multistage vector (MSV) and a poly(dl-lactide-co-glycolide) acid (PLGA) outer shell. Both of the two components of the resulting composite microspheres (PLGA-MSV) can be independently tailored to achieve multiple release kinetics contributing to the control of the release profile of a reporter protein in vitro. The influence of MSV shape (hemispherical or discoidal) and size (1, 3, or 7 μm) on PLGA-MSV's morphology and size distribution was investigated. Second, the copolymer ratio of the PLGA used to fabricate the outer shell of PLGA-MSV was varied. The composites were fully characterized by optical microscopy, scanning electron microscopy, ζ potential, Fourier transform infrared spectroscopy, and thermogravimetric analysis-differential scanning calorimetry, and their release kinetics over 30 days. PLGA-MSV's biocompatibility was assessed in vitro with J774 macrophages. Finally, the formulation of PLGA-MSV was selected, which concurrently provided the most consistent microsphere size and allowed for a zero-order release kinetic. The selected PLGA-MSVs were injected in a subcutaneous model in mice, and the in vivo release of the reporter protein was followed over 2 weeks by intravital microscopy, to assess if the zero-order release was preserved. PLGA-MSV was able to retain the payload over 2 weeks, avoiding the initial burst release typical of most drug delivery systems. Finally, histological evaluation assessed the

  11. Nitrate-Dependent Control of Shoot K Homeostasis by the Nitrate Transporter1/Peptide Transporter Family Member NPF7.3/NRT1.5 and the Stelar K+ Outward Rectifier SKOR in Arabidopsis1[OPEN

    PubMed Central

    Drechsler, Navina; Zheng, Yue; Nobmann, Barbara; Rausch, Christine

    2015-01-01

    Root-to-shoot translocation and shoot homeostasis of potassium (K) determine nutrient balance, growth, and stress tolerance of vascular plants. To maintain the cation-anion balance, xylem loading of K+ in the roots relies on the concomitant loading of counteranions, like nitrate (NO3−). However, the coregulation of these loading steps is unclear. Here, we show that the bidirectional, low-affinity Nitrate Transporter1 (NRT1)/Peptide Transporter (PTR) family member NPF7.3/NRT1.5 is important for the NO3−-dependent K+ translocation in Arabidopsis (Arabidopsis thaliana). Lack of NPF7.3/NRT1.5 resulted in K deficiency in shoots under low NO3− nutrition, whereas the root elemental composition was unchanged. Gene expression data corroborated K deficiency in the nrt1.5-5 shoot, whereas the root responded with a differential expression of genes involved in cation-anion balance. A grafting experiment confirmed that the presence of NPF7.3/NRT1.5 in the root is a prerequisite for proper root-to-shoot translocation of K+ under low NO3− supply. Because the depolarization-activated Stelar K+ Outward Rectifier (SKOR) has previously been described as a major contributor for root-to-shoot translocation of K+ in Arabidopsis, we addressed the hypothesis that NPF7.3/NRT1.5-mediated NO3− translocation might affect xylem loading and root-to-shoot K+ translocation through SKOR. Indeed, growth of nrt1.5-5 and skor-2 single and double mutants under different K/NO3− regimes revealed that both proteins contribute to K+ translocation from root to shoot. SKOR activity dominates under high NO3− and low K+ supply, whereas NPF7.3/NRT1.5 is required under low NO3− availability. This study unravels nutritional conditions as a critical factor for the joint activity of SKOR and NPF7.3/NRT1.5 for shoot K homeostasis. PMID:26508776

  12. Photoswitching of azobenzene-containing self-assembled monolayers as a tool for control over silicon surface electronic properties.

    PubMed

    Malyar, Ivan V; Titov, Evgenii; Lomadze, Nino; Saalfrank, Peter; Santer, Svetlana

    2017-03-14

    We report on photoinduced remote control of work function and surface potential of a silicon surface modified with a photosensitive self-assembled monolayer consisting of chemisorbed azobenzene molecules (4-nitroazobenzene). It was found that the attachment of the organic monolayer increases the work function by hundreds of meV due to the increase in the electron affinity of silicon substrates. The change in the work function on UV light illumination is more pronounced for the azobenzene jacketed silicon substrate (ca. 250 meV) in comparison to 50 meV for the unmodified surface. Moreover, the photoisomerization of azobenzene results in complex kinetics of the work function change: immediate decrease due to light-driven processes in the silicon surface followed by slower recovery to the initial state due to azobenzene isomerization. This behavior could be of interest for electronic devices where the reaction on irradiation should be more pronounced at small time scales but the overall surface potential should stay constant over time independent of the irradiation conditions.

  13. Photoswitching of azobenzene-containing self-assembled monolayers as a tool for control over silicon surface electronic properties

    NASA Astrophysics Data System (ADS)

    Malyar, Ivan V.; Titov, Evgenii; Lomadze, Nino; Saalfrank, Peter; Santer, Svetlana

    2017-03-01

    We report on photoinduced remote control of work function and surface potential of a silicon surface modified with a photosensitive self-assembled monolayer consisting of chemisorbed azobenzene molecules (4-nitroazobenzene). It was found that the attachment of the organic monolayer increases the work function by hundreds of meV due to the increase in the electron affinity of silicon substrates. The change in the work function on UV light illumination is more pronounced for the azobenzene jacketed silicon substrate (ca. 250 meV) in comparison to 50 meV for the unmodified surface. Moreover, the photoisomerization of azobenzene results in complex kinetics of the work function change: immediate decrease due to light-driven processes in the silicon surface followed by slower recovery to the initial state due to azobenzene isomerization. This behavior could be of interest for electronic devices where the reaction on irradiation should be more pronounced at small time scales but the overall surface potential should stay constant over time independent of the irradiation conditions.

  14. Erbium-doped slot waveguides containing size-controlled silicon nanocrystals

    NASA Astrophysics Data System (ADS)

    Hoffmann, R.; Beyer, J.; Klemm, V.; Rafaja, D.; Johnson, B. C.; McCallum, J. C.; Heitmann, J.

    2015-04-01

    Silicon based slot waveguides with a slot containing Si nanocrystals (Si-nc) and Erbium ions (Er3+) inside a silica matrix were prepared using sputter deposition and low-energy ion implantation. This sequence enabled independent optimization of nanocrystal formation and Er3+ incorporation parameters. Using a superlattice approach, the size of the Si-nc inside the slot could be controlled and optimized for maximum Er3+ luminescence yield at 1.54 μm. Er3+ is found to be efficiently pumped by Si-nc of sizes around 3 to 4 nm. Increasing Er3+ photoluminescence at 1.54 μm with increasing post-implantation annealing temperatures up to 1000 °C is attributed to annealing of matrix or Si-nc interface defects mainly. Additionally, a dependence of the Er3+ luminescence intensity on both the excitation and emission linear polarization orientation is shown, which demonstrates efficient field enhancement in sputtered slot waveguide structures.

  15. Erbium-doped slot waveguides containing size-controlled silicon nanocrystals

    SciTech Connect

    Hoffmann, R.; Beyer, J. Heitmann, J.; Klemm, V.; Rafaja, D.; Johnson, B. C.; McCallum, J. C.

    2015-04-28

    Silicon based slot waveguides with a slot containing Si nanocrystals (Si-nc) and Erbium ions (Er{sup 3+}) inside a silica matrix were prepared using sputter deposition and low-energy ion implantation. This sequence enabled independent optimization of nanocrystal formation and Er{sup 3+} incorporation parameters. Using a superlattice approach, the size of the Si-nc inside the slot could be controlled and optimized for maximum Er{sup 3+} luminescence yield at 1.54 μm. Er{sup 3+} is found to be efficiently pumped by Si-nc of sizes around 3 to 4 nm. Increasing Er{sup 3+} photoluminescence at 1.54 μm with increasing post-implantation annealing temperatures up to 1000 °C is attributed to annealing of matrix or Si-nc interface defects mainly. Additionally, a dependence of the Er{sup 3+} luminescence intensity on both the excitation and emission linear polarization orientation is shown, which demonstrates efficient field enhancement in sputtered slot waveguide structures.

  16. Ion-beam induced atomic mixing in isotopically controlled silicon multilayers

    NASA Astrophysics Data System (ADS)

    Radek, M.; Bracht, H.; Liedke, B.; Böttger, R.; Posselt, M.

    2016-11-01

    Implantation of germanium (Ge), gallium (Ga), and arsenic (As) into crystalline and preamorphized isotopically controlled silicon (Si) multilayer structures at temperatures between 153 K and 973 K was performed to study the mechanisms mediating ion-beam induced atomic mixing. Secondary-ion-mass-spectrometry was applied to determine concentration-depth profiles of the stable isotopes before and after ion implantation. The intermixing is analytically described by a depth-dependent displacement function. The maximum displacement is found to depend not only on temperature and microstructure but also on the doping type of the implanted ion. Molecular dynamics calculations evaluate the contribution of cascade mixing, i.e., thermal-spike mixing, to the overall observed atomic mixing. Calculated and experimental results on the temperature dependence of ion-beam mixing in the amorphous and crystalline structures provide strong evidence for ion-beam induced enhanced crystallization and enhanced self-diffusion, respectively. On the other hand, the former process is confirmed by channeling Rutherford backscattering analyses of the amorphous layer thickness remaining after implantation, the latter process is consistently attributed to the formation of highly mobile Si di-interstitials formed under irradiation and in the course of damage annealing. The observed ion-beam mixing in Si is compared to recent results on ion-beam mixing of Ge isotope multilayers that, in contrast to Si, are fully described by thermal-spike mixing only.

  17. Controllable shrinking of inverted-pyramid silicon nanopore arrays by dry-oxygen oxidation.

    PubMed

    Deng, Tao; Chen, Jian; Li, Mengwei; Wang, Yifan; Zhao, Chenxu; Zhang, Zhonghui; Liu, Zewen

    2013-12-20

    A novel and simple technique for the controllable shrinkage of inverted-pyramid silicon (Si) nanopore arrays is reported. The Si nanopore arrays with sizes from 60 to 150 nm, made using a combination of dry and wet etching, were shrunk to sub 10 nm, or even closed, using direct dry-oxygen oxidation at 900 ° C. The shrinkage process of the pyramidal nanopore induced by oxidation was carefully modeled and simulated. The simulation was found to be in good agreement with the experimental data within most of the oxidation time range. Using this method, square nanopore arrays with an average size of 30 nm, and rectangular nanopores and nanoslits with feature sizes as small as 8 nm, have been obtained. Furthermore, focused ion beam cutting experiments revealed that the inner structure of the nanopore after the shrinkage kept its typical inverted-pyramid shape, which is of importance in many fields such as biomolecular sensors and ionic analogs of electronic devices, as well as nanostencils for surface nano-patterning.

  18. Graphene Triangular Ballistic Rectifier: Fabrication and Characterisation

    NASA Astrophysics Data System (ADS)

    Auton, Gregory; Kumar, Roshan Krishna; Hill, Ernie; Song, Aimin

    2016-09-01

    It has been shown that graphene can demonstrate ballistic transport at room temperature. This opens up a range of practical applications that do not require graphene to have a band gap, which is one of the most significant challenges for its use in the electronics industry. Here, the very latest high mobility graphene (>100,000 cm2 V-1 s-1) fabrication techniques will be demonstrated so that one such device, called the triangular ballistic rectifier (TBR), can be characterised. The TBR is a four-terminal device with a triangular anti-dot at their intersection; two sides of the triangle are positioned and angled such that ballistic carriers from the two input electrodes are redirected like billiard balls to one of the two output contacts irrespective of the instantaneous polarity of the input. A responsivity of 2400 mV mW-1 is demonstrated at room temperature from a low-frequency input signal. The ballistic nature of the device is justified and explained in more detail with low-temperature measurements.

  19. Precision envelope detector and linear rectifier circuitry

    DOEpatents

    Davis, Thomas J.

    1980-01-01

    Disclosed is a method and apparatus for the precise linear rectification and envelope detection of oscillatory signals. The signal is applied to a voltage-to-current converter which supplies current to a constant current sink. The connection between the converter and the sink is also applied through a diode and an output load resistor to a ground connection. The connection is also connected to ground through a second diode of opposite polarity from the diode in series with the load resistor. Very small amplitude voltage signals applied to the converter will cause a small change in the output current of the converter, and the difference between the output current and the constant current sink will be applied either directly to ground through the single diode, or across the output load resistor, dependent upon the polarity. Disclosed also is a full-wave rectifier utilizing constant current sinks and voltage-to-current converters. Additionally, disclosed is a combination of the voltage-to-current converters with differential integrated circuit preamplifiers to boost the initial signal amplitude, and with low pass filtering applied so as to obtain a video or signal envelope output.

  20. Method of purifying metallurgical grade silicon employing reduced pressure atmospheric control

    NASA Technical Reports Server (NTRS)

    Ingle, W. M.; Thompson, S. W.; Chaney, R. E. (Inventor)

    1979-01-01

    A method in which a quartz tube is charged with chunks of metallurgical grade silicon and/or a mixture of such chunks and high purity quartz sand, and impurities from a class including aluminum, boron, as well as certain transition metals including nickel, iron, and manganese is described. The tube is then evacuated and heated to a temperature within a range of 800 C to 1400 C. A stream of gas comprising a reactant, such as silicon tetrafluoride, is continuously delivered at low pressures through the charge for causing a metathetical reaction of impurities of the silicon and the reactant to occur for forming a volatile halide and leaving a residue of silicon of an improved purity. The reactant which included carbon monoxide gas and impurities such as iron and nickel react to form volatile carbonyls.

  1. Maximal rectification ratios for idealized bi-segment thermal rectifiers

    PubMed Central

    Shih, Tien-Mo; Gao, Zhaojing; Guo, Ziquan; Merlitz, Holger; Pagni, Patrick J.; Chen, Zhong

    2015-01-01

    Thermal rectifiers whose forward heat fluxes are greater than reverse counterparts have been extensively studied. Here we have discovered, idealized, and derived the ultimate limit of such rectification ratios, which are partially validated by numerical simulations, experiments, and micro-scale Hamiltonian-oscillator analyses. For rectifiers whose thermal conductivities (κ) are linear with the temperature, this limit is simply a numerical value of 3. For those whose conductivities are nonlinear with temperatures, the maxima equal κmax/κmin, where two extremes denote values of the solid segment materials that can be possibly found or fabricated within a reasonable temperature range. Recommendations for manufacturing high-ratio rectifiers are also given with examples. Under idealized assumptions, these proposed rectification limits cannot be defied by any bi-segment thermal rectifiers. PMID:26238970

  2. Silicon-in-silica spheres via axial thermal gradient in-fibre capillary instabilities.

    PubMed

    Gumennik, Alexander; Wei, Lei; Lestoquoy, Guillaume; Stolyarov, Alexander M; Jia, Xiaoting; Rekemeyer, Paul H; Smith, Matthew J; Liang, Xiangdong; Grena, Benjamin J-B; Johnson, Steven G; Gradečak, Silvija; Abouraddy, Ayman F; Joannopoulos, John D; Fink, Yoel

    2013-01-01

    The ability to produce small scale, crystalline silicon spheres is of significant technological and scientific importance, yet scalable methods for doing so have remained elusive. Here we demonstrate a silicon nanosphere fabrication process based on an optical fibre drawing technique. A silica-cladded silicon-core fibre with diameters down to 340 nm is continuously fed into a flame defining an axial thermal gradient and the continuous formation of spheres whose size is controlled by the feed speed is demonstrated. In particular, spheres of diameter <500 nm smaller than those produced under isothermal heating conditions are shown and analysed. A fibre with dual cores, p-type and n-type silicon, is drawn and processed into spheres. Spatially coherent break-up leads to the joining of the spheres into a bispherical silicon 'p-n molecule'. The resulting device is measured to reveal a rectifying I-V curve consistent with the formation of a p-n junction.

  3. Wireless power transmission for biomedical implants: The role of near-zero threshold CMOS rectifiers.

    PubMed

    Mohammadi, Ali; Redoute, Jean-Michel; Yuce, Mehmet R

    2015-01-01

    Biomedical implants require an electronic power conditioning circuitry to provide a stable electrical power supply. The efficiency of wireless power transmission is strongly dependent on the power conditioning circuitry specifically the rectifier. A cross-connected CMOS bridge rectifier is implemented to demonstrate the impact of thresholds of rectifiers on wireless power transfer. The performance of the proposed rectifier is experimentally compared with a conventional Schottky diode full wave rectifier over 9 cm distance of air and tissue medium between the transmitter and receiver. The output voltage generated by the CMOS rectifier across a 1 KΩ resistive load is around twice as much as the Schottky rectifier.

  4. Electrostatic shape control of single crystal silicon (SCS), free standing, thin plate deformable mirrors

    NASA Astrophysics Data System (ADS)

    Tidwell, Terry L.

    This research involved the creation and investigation of a low cost design for a MEMS platform capable of controlled shape morphing using very simple mechanical design and manufacturing processes. The platform is made of single crystal silicon and loaded with multiple in-plane forces and moments from three fixed positions on the plate boundary, and with distributed electrostatic forces across the platform surface. This work is important because such a platform could be used as a deformable mirror for adaptive optics systems used in laser communications, vision science, precision beam shaping, and many other important applications. The work involved the development and experimental validation of analytical models that can map the displacement field of a thin flat SCS plate subject to complex loading on the boundary and distributed electrostatic forces. The achievement of these goals included experimentally mapping the platform surface after deformation into three-dimensional geometries defined by the Zernike polynomials. These are relatively large elastic deflections requiring a highly nonlinear analysis. The current analysis applies to circular plates supported on buckled flexures, which have been designed based an model results, fabricated using common microelectronic fabrication processes, and characterized using optical and interference microscopy. Of special interest is the investigation of post-buckling behavior which enhances the range and robustness of operation of the device by providing local upward motion for some modes. The prototypes have been tested and the results compared well with the theoretical results. The first 15 Zernike modes were examined with successful mode shape generation of 13, and fitting errors less than unity were achieved for all 15. From continued analysis of the experimental results the models can be further enhanced to create a commercially viable real time control algorithm for the device.

  5. Software-defined control-plane for wavelength selective unicast and multicast of optical data in a silicon photonic platform.

    PubMed

    Gazman, Alexander; Browning, Colm; Bahadori, Meisam; Zhu, Ziyi; Samadi, Payman; Rumley, Sébastien; Vujicic, Vidak; Barry, Liam P; Bergman, Keren

    2017-01-09

    We demonstrate a programmable control-plane based on field programmable gate array (FPGA) with a power-efficient algorithm for optical unicast, multicast, and broadcast functionalities in a silicon photonic platform. The platform includes a silicon photonic 1×8 microring array chip which in conjunction with a fast tunable laser over the C-band is capable of delivering software controlled wavelength selective functionality on top of spatial switching. We characterize the thermo-optic response of microring resonators and extract key parameters necessary for the development of the control-plane. The performance of the proposed architecture is tested with 10 Gb/s on-off keying (OOK) optical data and error-free operation is verified for various wavelength and spatial switching scenarios. Lastly, we evaluate electrical power and energy consumption required to reconfigure the silicon photonic device for all possible wavelength operations and output ports combinations and show that unicast, multicast of two, three, four, five, six, seven, and broadcast functions are achieved with energy overheads of 0.02, 0.07, 0.18, 0.49, 0.76, 1.01, 1.3, and 1.55 pJ/bit, respectively.

  6. Process for the controlled growth of single-crystal films of silicon carbide polytypes on silicon carbide wafers

    NASA Technical Reports Server (NTRS)

    Larkin, David J. (Inventor); Powell, J. Anthony (Inventor)

    1992-01-01

    A method for the controlled growth of single-crystal semiconductor-device-quality films of SiC polytypes on vicinal (0001) SiC wafers with low tilt angles is presented. Both homoepitaxial and heteroepitaxial SiC films can be produced on the same wafer. In particular, 3C-SiC and 6H-SiC films can be produced within selected areas of the same 6H-SiC wafer.

  7. Process for the controlled growth of single-crystal films of silicon carbide polytypes on silicon carbide wafers

    NASA Technical Reports Server (NTRS)

    Powell, J. Anthony (Inventor)

    1991-01-01

    This invention is a method for the controlled growth of single-crystal semiconductor device quality films of SiC polytypes on vicinal (0001) SiC wafers with low tilt angles. Both homoepitaxial and heteroepitaxial SiC films can be produced on the same wafer. In particular, 3C-SiC and 6H-SiC films can be produced within selected areas of the same 6H-SiC wafer.

  8. An Integrated Circuit Design of High Efficiency Parallel-SSHI Rectifier for Piezoelectric Energy Harvesting

    NASA Astrophysics Data System (ADS)

    Hsieh, Y. C.; Chen, J. J.; Chen, H. S.; Wu, W. J.

    2016-11-01

    This paper presents the design and implementation of a rectifier for piezoelectric energy harvesting based on the parallel-synchronized-switch harvesting-on-inductor (P-SSHI) technique, also known as bias flip circuit[1]. The circuit is implemented with 0.25 μm CMOS high voltage process with only 0.9648 mm2 chip area. Post-layout simulation of the circuit shows the circuit extracts 336% more power compared with the full-bridge rectifier. The system's average control power loss is 26 μW while operating with a self-made MEMS piezoelectric transducer with output current 25 μA 120Hz and internal capacitance 6.45nF. The output power is 43.42 μW under optimal load of 1.5 MΩ.

  9. Self-Rectifying Resistive Switching Memory with Ultralow Switching Current in Pt/Ta2O5/HfO2- x /Hf Stack

    NASA Astrophysics Data System (ADS)

    Ma, Haili; Feng, Jie; Lv, Hangbing; Gao, Tian; Xu, Xiaoxin; Luo, Qing; Gong, Tiancheng; Yuan, Peng

    2017-02-01

    In this study, we present a bilayer resistive switching memory device with Pt/Ta2O5/HfO2- x /Hf structure, which shows sub-1 μA ultralow operating current, median switching voltage, adequate ON/OFF ratio, and simultaneously containing excellent self-rectifying characteristics. The control sample with single HfO2- x structure shows bidirectional memory switching properties with symmetrical I-V curve in low resistance state. After introducing a 28-nm-thick Ta2O5 layer on HfO2- x layer, self-rectifying phenomena appeared, with a maximum self-rectifying ratio (RR) of 4 × 103 observed at ±0.5 V. Apart from being a series resistance for the cell, the Ta2O5 rectifying layer also served as an oxygen reservoir which remains intact during the whole switching cycle.

  10. Size Control of Porous Silicon-Based Nanoparticles via Pore-Wall Thinning.

    PubMed

    Secret, Emilie; Leonard, Camille; Kelly, Stefan J; Uhl, Amanda; Cozzan, Clayton; Andrew, Jennifer S

    2016-02-02

    Photoluminescent silicon nanocrystals are very attractive for biomedical and electronic applications. Here a new process is presented to synthesize photoluminescent silicon nanocrystals with diameters smaller than 6 nm from a porous silicon template. These nanoparticles are formed using a pore-wall thinning approach, where the as-etched porous silicon layer is partially oxidized to silica, which is dissolved by a hydrofluoric acid solution, decreasing the pore-wall thickness. This decrease in pore-wall thickness leads to a corresponding decrease in the size of the nanocrystals that make up the pore walls, resulting in the formation of smaller nanoparticles during sonication of the porous silicon. Particle diameters were measured using dynamic light scattering, and these values were compared with the nanocrystallite size within the pore wall as determined from X-ray diffraction. Additionally, an increase in the quantum confinement effect is observed for these particles through an increase in the photoluminescence intensity of the nanoparticles compared with the as-etched nanoparticles, without the need for a further activation step by oxidation after synthesis.

  11. Doping controlled roughness and defined mesoporosity in chemically etched silicon nanowires with tunable conductivity

    NASA Astrophysics Data System (ADS)

    McSweeney, W.; Lotty, O.; Mogili, N. V. V.; Glynn, C.; Geaney, H.; Tanner, D.; Holmes, J. D.; O'Dwyer, C.

    2013-07-01

    By using Si(100) with different dopant type (n++-type (As) or p-type (B)), we show how metal-assisted chemically etched (MACE) nanowires (NWs) can form with rough outer surfaces around a solid NW core for p-type NWs, and a unique, defined mesoporous structure for highly doped n-type NWs. We used high resolution electron microscopy techniques to define the characteristic roughening and mesoporous structure within the NWs and how such structures can form due to a judicious choice of carrier concentration and dopant type. The n-type NWs have a mesoporosity that is defined by equidistant pores in all directions, and the inter-pore distance is correlated to the effective depletion region width at the reduction potential of the catalyst at the silicon surface in a HF electrolyte. Clumping in n-type MACE Si NWs is also shown to be characteristic of mesoporous NWs when etched as high density NW layers, due to low rigidity (high porosity). Electrical transport investigations show that the etched nanowires exhibit tunable conductance changes, where the largest resistance increase is found for highly mesoporous n-type Si NWs, in spite of their very high electronic carrier concentration. This understanding can be adapted to any low-dimensional semiconducting system capable of selective etching through electroless, and possibly electrochemical, means. The process points to a method of multiscale nanostructuring NWs, from surface roughening of NWs with controllable lengths to defined mesoporosity formation, and may be applicable to applications where high surface area, electrical connectivity, tunable surface structure, and internal porosity are required.

  12. Enhanced photocurrent in thin-film amorphous silicon solar cells via shape controlled three-dimensional nanostructures.

    PubMed

    Hilali, Mohamed M; Yang, Shuqiang; Miller, Mike; Xu, Frank; Banerjee, Sanjay; Sreenivasan, S V

    2012-10-12

    In this paper, we have explored manufacturable approaches to sub-wavelength controlled three-dimensional (3D) nano-patterns with the goal of significantly enhancing the photocurrent in amorphous silicon solar cells. Here we demonstrate efficiency enhancement of about 50% over typical flat a-Si thin-film solar cells, and report an enhancement of 20% in optical absorption over Asahi textured glass by fabricating sub-wavelength nano-patterned a-Si on glass substrates. External quantum efficiency showed superior results for the 3D nano-patterned thin-film solar cells due to enhancement of broadband optical absorption. The results further indicate that this enhanced light trapping is achieved with minimal parasitic absorption losses in the deposited transparent conductive oxide for the nano-patterned substrate thin-film amorphous silicon solar cell configuration. Optical simulations are in good agreement with experimental results, and also show a significant enhancement in optical absorption, quantum efficiency and photocurrent.

  13. The properties of polycrystalline silicon solar cells with controlled titanium additions

    NASA Technical Reports Server (NTRS)

    Rohatgi, A.; Hopkins, R. H.; Davis, J. R., Jr.

    1981-01-01

    By coupling the results of electrical measurements, such as spectral response, lighted and dark I-V determinations, and deep-level-transient spectroscopy with optical and laser scan photomicroscopy, the effects of grain boundaries and impurities on silicon solar cells were evaluated. Titanium, which produces two deep levels in silicon, degrades cell performance by reducing bulk lifetime and thus cell short-circuit current. Electrically active grain boundaries induce carrier recombination in the bulk and depletion regions of the solar cell. Experimental data imply a small but measurable segregation of titanium into some grain boundaries of the polycrystalline silicon containing high Ti concentration. However, for the titanium-contaminated polycrystalline material used in this study, solar cell performance is dominated by the electrically active titanium concentration in the grains. Microstructural impacts on the devices are of secondary importance

  14. Beds of reconfigurable angled hairs rectify Stokes flows

    NASA Astrophysics Data System (ADS)

    Alvarado, Jose; Comtet, Jean; Hosoi, Anette Peko

    2015-11-01

    Biological tissues such as intestines, blood vessels, kidneys, and tongues are coated with beds of passive, elongated, hair-like protrusions such as microvilli, hyaluronans, primary cilia, and papillae. Stresses from fluid flows can bend deformable hairs, but this reconfiguration can in turn affect confined fluid flows. We investigate this elastoviscous coupling by developing a biomimetic model system of elastomer hair beds subject to shear-driven Stokes flows in a Taylor-Couette geometry. We characterize this system with a theoretical model which shows that reconfiguration of hair beds is controlled by a single elastoviscous number. Hair bending results in an apparent shear thinning because the hair tip lowers toward the base and thus widens the gap through which fluid flows. When hairs are cantilevered at an angle subnormal to the surface, flow against the grain bends hairs away from the base and thus narrows the gap. Beds of reconfigurable angled hairs can thus give rise to an asymmetric flow impedance at arbitrarily low Reynolds number and could therefore function as a microfluidic rectifier.

  15. Optically-controlled extinction ratio and Q-factor tunable silicon microring resonators based on optical forces.

    PubMed

    Long, Yun; Wang, Jian

    2014-06-24

    Tunability is a desirable property of microring resonators to facilitate superior performance. Using light to control light, we present an alternative simple approach to tuning the extinction ratio (ER) and Q-factor of silicon microring resonators based on optical forces. We design an opto-mechanical tunable silicon microring resonator consisting of an add-drop microring resonator and a control-light-carrying waveguide ("controlling" waveguide). One of the two bus waveguides of the microring resonator is a deformable nanostring put in parallel with the "controlling" waveguide. The tuning mechanism relies on the optical force induced deflection of suspended nanostring, leading to the change of coupling coefficient of microring and resultant tuning of ER and Q-factor. Two possible geometries, i.e. double-clamped nanostring and cantilever nanostring, are studied in detail for comparison. The obtained results imply a favorable structure with the microring positioned at the end of the cantilever nanostring. It features a wide tuning range of ER from 5.6 to 39.9 dB and Q-factor from 309 to 639 as changing the control power from 0 to 1.4 mW.

  16. Optically-controlled extinction ratio and Q-factor tunable silicon microring resonators based on optical forces

    NASA Astrophysics Data System (ADS)

    Long, Yun; Wang, Jian

    2014-06-01

    Tunability is a desirable property of microring resonators to facilitate superior performance. Using light to control light, we present an alternative simple approach to tuning the extinction ratio (ER) and Q-factor of silicon microring resonators based on optical forces. We design an opto-mechanical tunable silicon microring resonator consisting of an add-drop microring resonator and a control-light-carrying waveguide (``controlling'' waveguide). One of the two bus waveguides of the microring resonator is a deformable nanostring put in parallel with the ``controlling'' waveguide. The tuning mechanism relies on the optical force induced deflection of suspended nanostring, leading to the change of coupling coefficient of microring and resultant tuning of ER and Q-factor. Two possible geometries, i.e. double-clamped nanostring and cantilever nanostring, are studied in detail for comparison. The obtained results imply a favorable structure with the microring positioned at the end of the cantilever nanostring. It features a wide tuning range of ER from 5.6 to 39.9 dB and Q-factor from 309 to 639 as changing the control power from 0 to 1.4 mW.

  17. An ultra-low-voltage rectifier for PE energy harvesting applications

    NASA Astrophysics Data System (ADS)

    Jingmin, Wang; Zheng, Yang; Zhangming, Zhu; Yintang, Yang

    2016-02-01

    An ultra low voltage rectifier with high power conversion efficiency (PCE) for PE energy harvesting applications is presented in this paper. This is achieved by utilizing the DTMOS which the body terminal is connected to the gate terminal in a diode connected transistor. This implementation facilitates the rectifier with dynamic control over the threshold voltage. Moreover, we use input powered to take the place of output powered to reduce the power loss and thereby increasing the power conversion efficiency. Based on standard SMIC 0.18 μm CMOS technology, the simulation results show that the voltage conversion efficiency and the power conversion efficiency can reach up to 90.5% and 95.5% respectively, when the input voltage equals to 0.2 V @ 100 Hz with load resistance 50 kω. Input voltages with frequencies in the range of 10 Hz-1 kHz can be rectified. Project supported by the National Natural Science Foundation of China (Nos. 61234002, 61322405, 61306044, 61376033) and the National High-Tech Program of China (No. 2013AA014103).

  18. A metamaterial electromagnetic energy rectifying surface with high harvesting efficiency

    NASA Astrophysics Data System (ADS)

    Duan, Xin; Chen, Xing; Zhou, Lin

    2016-12-01

    A novel metamaterial rectifying surface (MRS) for electromagnetic energy capture and rectification with high harvesting efficiency is presented. It is fabricated on a three-layer printed circuit board, which comprises an array of periodic metamaterial particles in the shape of mirrored split rings, a metal ground, and integrated rectifiers employing Schottky diodes. Perfect impedance matching is engineered at two interfaces, i.e. one between free space and the surface, and the other between the metamaterial particles and the rectifiers, which are connected through optimally positioned vias. Therefore, the incident electromagnetic power is captured with almost no reflection by the metamaterial particles, then channeled maximally to the rectifiers, and finally converted to direct current efficiently. Moreover, the rectifiers are behind the metal ground, avoiding the disturbance of high power incident electromagnetic waves. Such a MRS working at 2.45 GHz is designed, manufactured and measured, achieving a harvesting efficiency up to 66.9% under an incident power density of 5 mW/cm2, compared with a simulated efficiency of 72.9%. This high harvesting efficiency makes the proposed MRS an effective receiving device in practical microwave power transmission applications.

  19. Controlled Patterning of Vertical Silicon Structures Using Polymer Lithography and Wet Chemical Etching.

    PubMed

    Kim, Han-Jung; Lee, Su-Han; Lee, Jihye; Lee, Eung-Sug; Choi, Jun-Hyuk; Jung, Joo-Yun; Jeong, Jun-Ho; Choi, Dae-Geun

    2015-06-01

    In order to improve their performance for various applications, a facile method for the wafer-scale fabrication of micro/nano-patterned vertical silicon (Si) structures such as silicon nanowires (SiNWs), silicon nanorods (SiNRs), and porous silicon (p-Si) was developed. The method is based on the combination of lithography techniques (photolithography, thermal nano-imprint lithography, nanosphere lithography) and wet chemical etching (electro-chemical etching, metal-assisted chemical etching) processes. Micro-patterned p-Si with various pore diameters from 30 nm to 1.2 um were fabricated via electro-chemical etching. Micro/nano-patterned Si microstructures, nanorods, and nanowires were also successfully fabricated by changing the thickness of the metal layer of 5 nm or 20 nm in the metal-assisted chemical etching process. This study also investigated the effect of the etching time and patterning on the etched SiNWs length. This method provides advantages of simplicity, speed, large-scale production, easy size and shape manipulation, and low cost.

  20. Voltage-controlling mechanisms in low-resistivity silicon solar cells - A unified approach

    NASA Technical Reports Server (NTRS)

    Weizer, V. G.; Swartz, C. K.; Hart, R. E.; Godlewski, M. P.

    1986-01-01

    An experimental technique is used to determine the relative values of the base and emitter components of the dark saturation current of six types of high-voltage low-resistivity silicon solar cells. One of the surprising findings is the suggestion that the magnitude of the minority-carrier mobility may be process-dependent.

  1. Silicone metalization

    SciTech Connect

    Maghribi, Mariam N.; Krulevitch, Peter; Hamilton, Julie

    2008-12-09

    A system for providing metal features on silicone comprising providing a silicone layer on a matrix and providing a metal layer on the silicone layer. An electronic apparatus can be produced by the system. The electronic apparatus comprises a silicone body and metal features on the silicone body that provide an electronic device.

  2. Silicone metalization

    SciTech Connect

    Maghribi, Mariam N.; Krulevitch, Peter; Hamilton, Julie

    2006-12-05

    A system for providing metal features on silicone comprising providing a silicone layer on a matrix and providing a metal layer on the silicone layer. An electronic apparatus can be produced by the system. The electronic apparatus comprises a silicone body and metal features on the silicone body that provide an electronic device.

  3. Novel synthetic methodology for controlling the orientation of zinc oxide nanowires grown on silicon oxide substrates

    NASA Astrophysics Data System (ADS)

    Cho, Jinhyun; Salleh, Najah; Blanco, Carlos; Yang, Sungwoo; Lee, Chul-Jin; Kim, Young-Woo; Kim, Jungsang; Liu, Jie

    2014-03-01

    This study presents a simple method to reproducibly obtain well-aligned vertical ZnO nanowire arrays on silicon oxide (SiOx) substrates using seed crystals made from a mixture of ammonium hydroxide (NH4OH) and zinc acetate (Zn(O2CCH3)2) solution. In comparison, high levels of OH- concentration obtained using NaOH or KOH solutions lead to incorporation of Na or K atoms into the seed crystals, destroying the c-axis alignment of the seeds and resulting in the growth of misaligned nanowires. The use of NH4OH eliminates the metallic impurities and ensures aligned nanowire growth in a wide range of OH- concentrations in the seed solution. The difference of crystalline orientations between NH4OH- and NaOH-based seeds is directly observed by lattice-resolved images and electron diffraction patterns using a transmission electron microscope (TEM). This study obviously suggests that metallic impurities incorporated into the ZnO nanocrystal seeds are one of the factors that generates the misaligned ZnO nanowires. This method also enables the use of silicon oxide substrates for the growth of vertically aligned nanowires, making ZnO nanostructures compatible with widely used silicon fabrication technology.This study presents a simple method to reproducibly obtain well-aligned vertical ZnO nanowire arrays on silicon oxide (SiOx) substrates using seed crystals made from a mixture of ammonium hydroxide (NH4OH) and zinc acetate (Zn(O2CCH3)2) solution. In comparison, high levels of OH- concentration obtained using NaOH or KOH solutions lead to incorporation of Na or K atoms into the seed crystals, destroying the c-axis alignment of the seeds and resulting in the growth of misaligned nanowires. The use of NH4OH eliminates the metallic impurities and ensures aligned nanowire growth in a wide range of OH- concentrations in the seed solution. The difference of crystalline orientations between NH4OH- and NaOH-based seeds is directly observed by lattice-resolved images and electron

  4. Self-organized vertically aligned single-crystal silicon nanostructures with controlled shape and aspect ratio by reactive plasma etching

    NASA Astrophysics Data System (ADS)

    Xu, S.; Levchenko, I.; Huang, S. Y.; Ostrikov, K.

    2009-09-01

    The formation of vertically aligned single-crystalline silicon nanostructures via "self-organized" maskless etching in Ar+H2 plasmas is studied. The shape and aspect ratio can be effectively controlled by the reactive plasma composition. In the optimum parameter space, single-crystalline pyramid-like nanostructures are produced; otherwise, nanocones and nanodots are formed. This generic nanostructure formation approach does not involve any external material deposition. It is based on a concurrent sputtering, etching, hydrogen termination, and atom/radical redeposition and can be applied to other nanomaterials.

  5. 13.56 MHz polymer rectifier by printing processes

    NASA Astrophysics Data System (ADS)

    Lin, Chang-Yu; Chou, Chia-Hung; Hou, Jack; Chan, Yi-Jen

    2007-09-01

    Printed electronics have attracted increasing attentions in recent years due to its flexible format, easy process and potentially low cost features. Achieving good performance organic Schottky diode as the key component of a rectifier for printed RFID applications became a critical task. The electrical performances of an organic Schottky diode electrical can be improved by inserting an intermediate layer between the semiconductor and electrode surfaces. This interface plays an important role in improving rectification ratio and lifetime of a polymer diode. In this work, a 13.56MHz rectifier based on a polymer Schottky diode will be demonstrated and a wireless energy transmission built on flexible substrates will be proposed.

  6. Stabilization and Frequency Control of a DFB Laser With a Tunable Optical Reflector Integrated in a Silicon Photonics PIC

    NASA Astrophysics Data System (ADS)

    Hauck, Johannes; Schrammen, Matthias; Romero-Garcia, Sebastian; Muller, Juliana; Shen, Bin; Richter, Jens; Merget, Florian; Witzens, Jeremy

    2016-12-01

    We investigate the effect of tunable optical feedback on a commercial DFB laser edge coupled to a Silicon Photonics planar integrated circuit in which a tunable reflector has been implemented by means of a ring resonator based add-drop multiplexer. Controlled optical feedback allows for fine-tuning of the laser oscillation frequency. Under certain conditions it also allows suppression of bifurcation modes triggered by reflections occurring elsewhere on the chip. A semi-analytical model describing laser dynamics under combined optical feedback from the input facet of the edge coupler and from the tunable on-chip reflector fits the measurements. Compensation of detrimental effects from reflections induced elsewhere on a transceiver chip may allow moving isolators downstream in future communications systems, facilitating direct hybrid laser integration in Silicon Photonics chips, provided a suitable feedback signal for a control system can be identified. Moreover, the optical frequency tuning at lower feedback levels can be used to form a rapidly tunable optical oscillator as part of an optical phase locked loop, circumventing the problem of the thermal to free carrier effect crossover in the FM response of injection current controlled semiconductor laser diodes.

  7. Controlled release of theophylline from poly(vinyl alcohol) hydrogels/porous silicon nanostructured systems

    NASA Astrophysics Data System (ADS)

    Cervantes-Rincón, N.; Medellín-Rodríguez, F. J.; Escobar-Barrios, V. A.; Palestino, G.

    2013-03-01

    In this research, hybrid hydrogels of poly (vinyl alcohol)/ porous silicon (PSi)/theophylline were synthesized by the freezing and thawing method. We evaluated the influence of the synthesis parameters of the poly (vinyl alcohol) (PVA) hydrogels in relation to their ability to swell and drug released. The parameters studied (using an experimental design developed in Minitab 16) were the polymer concentration, the freezing temperature and the number of freezing/thawing (f/t) cycles. Nanostructured porous silicon particles (NsPSi) and theophylline were added within the polymer matrix to increase the drug charge and the polymer mechanical strength. The hybrid hydrogels were characterized by Infrared Spectroscopy Fourier Transform (FTIR), Scanning Electron Microscopy (SEM), Transmission Electron Microscopy (TEM) and Differential Scanning Calorimetry (DSC), drug delivery kinetics were engineered according to the desired drug release schedule.

  8. Controlled release of indomethacin from alginate-poloxamer-silicon carbide composites decrease in-vitro inflammation.

    PubMed

    Díaz-Rodríguez, P; Landin, M

    2015-03-01

    Composites of biomorphic silicon carbides (bioSiCs) and hydrogels are proposed in order to obtain materials able to load and release poor soluble drugs with application in bone pathologies therapy. Hydrogels composed by alginate and poloxamer were loaded with indomethacin, incorporated into the ceramics and crosslinked. The indomethacin release profile is dependent on the microstructure of the bioSiC selected. The loaded oak and sapelli bioSiCs composites have adequate release profiles to promote the decreasing of the secretion of pro-inflammatory cytokines in LPS stimulated macrophages, showing stronger anti-inflammatory effects than pine bioSiC composites. The released indomethacin is able to modulate the degradation of chondrocytes extracellular matrix and promote the formation of new collagen by osteoarthritic chondrocytes. Particles derived from mechanical wear of biomorphic silicon carbides do not show high toxicity, being similar to the zirconia particles.

  9. Controlled doping of silicon nanocrystals investigated by solution-processed field effect transistors.

    PubMed

    Gresback, Ryan; Kramer, Nicolaas J; Ding, Yi; Chen, Ting; Kortshagen, Uwe R; Nozaki, Tomohiro

    2014-06-24

    The doping of semiconductor nanocrystals (NCs), which is vital for the optimization of NC-based devices, remains a significant challenge. While gas-phase plasma approaches have been successful in incorporating dopant atoms into NCs, little is known about their electronic activation. Here, we investigate the electronic properties of doped silicon NC thin films cast from solution by field effect transistor analysis. We find that, analogous to bulk silicon, boron and phosphorus electronically dope Si NC thin films; however, the dopant activation efficiency is only ∼10(-2)-10(-4). We also show that surface doping of Si NCs is an effective way to alter the carrier concentrations in Si NC films.

  10. Process for fabricating device structures for real-time process control of silicon doping

    DOEpatents

    Weiner, Kurt H.

    2001-01-01

    Silicon device structures designed to allow measurement of important doping process parameters immediately after the doping step has occurred. The test structures are processed through contact formation using standard semiconductor fabrication techniques. After the contacts have been formed, the structures are covered by an oxide layer and an aluminum layer. The aluminum layer is then patterned to expose the contact pads and selected regions of the silicon to be doped. Doping is then performed, and the whole structure is annealed with a pulsed excimer laser. But laser annealing, unlike standard annealing techniques, does not effect the aluminum contacts because the laser light is reflected by the aluminum. Once the annealing process is complete, the structures can be probed, using standard techniques, to ascertain data about the doping step. Analysis of the data can be used to determine probable yield reductions due to improper execution of the doping step and thus provide real-time feedback during integrated circuit fabrication.

  11. Donor ionization in size controlled silicon nanocrystals: The transition from defect passivation to free electron generation

    NASA Astrophysics Data System (ADS)

    Crowe, I. F.; Papachristodoulou, N.; Halsall, M. P.; Hylton, N. P.; Hulko, O.; Knights, A. P.; Yang, P.; Gwilliam, R. M.; Shah, M.; Kenyon, A. J.

    2013-01-01

    We studied the photoluminescence spectra of silicon and phosphorus co-implanted silica thin films on (100) silicon substrates as a function of isothermal annealing time. The rapid phase segregation, formation, and growth dynamics of intrinsic silicon nanocrystals are observed, in the first 600 s of rapid thermal processing, using dark field mode X-TEM. For short annealing times, when the nanocrystal size distribution exhibits a relatively small mean diameter, formation in the presence of phosphorus yields an increase in the luminescence intensity and a blue shift in the emission peak compared with intrinsic nanocrystals. As the mean size increases with annealing time, this enhancement rapidly diminishes and the peak energy shifts further to the red than the intrinsic nanocrystals. These results indicate the existence of competing pathways for the donor electron, which depends strongly on the nanocrystal size. In samples containing a large density of relatively small nanocrystals, the tendency of phosphorus to accumulate at the nanocrystal-oxide interface means that ionization results in a passivation of dangling bond (Pb-centre) type defects, through a charge compensation mechanism. As the size distribution evolves with isothermal annealing, the density of large nanocrystals increases at the expense of smaller nanocrystals, through an Ostwald ripening mechanism, and the majority of phosphorus atoms occupy substitutional lattice sites within the nanocrystals. As a consequence of the smaller band-gap, ionization of phosphorus donors at these sites increases the free carrier concentration and opens up an efficient, non-radiative de-excitation route for photo-generated electrons via Auger recombination. This effect is exacerbated by an enhanced diffusion in phosphorus doped glasses, which accelerates silicon nanocrystal growth.

  12. Digital Control of Exchange Interaction in a Spin-based Silicon Quantum Computer

    DTIC Science & Technology

    2013-05-19

    investigate dc and ac properties of single and double vertical Si quantum dots with 3D confinement. The dots constitute the main building blocks of a...quantum computing, quantyum dots, Majorana fermions Leonid P. Rokhinson, James C. Sturm Indiana University - Purdue University Fort Wayne Sponsored Programs...of Exchange Interaction in a Spin-based Silicon Quantum Computer Report Title ABSTRACT We propose to investigate dc and ac properties of single and

  13. Rapid thermal processing of high-efficiency silicon solar cells with controlled in-situ annealing

    SciTech Connect

    Doshi, P.; Rohatgi, A.; Ropp, M.; Chen, Z.; Ruby, D.; Meier, D.L.

    1995-01-01

    Silicon solar cell efficiencies of 17.1%, 16.4%, 14.8%, and 14.9% have been achieved on FZ, Cz, multicrystalline (mc-Si), and dendritic web (DW) silicon, respectively, using simplified, cost-effective rapid thermal processing (RTP). These represent the highest reported efficiencies for solar cells processed with simultaneous front and back diffusion with no conventional high-temperature furnace steps. Appropriate diffusion temperature coupled with the added in-situ anneal resulted in suitable minority-carrier lifetime and diffusion profiles for high-efficiency cells. The cooling rate associated with the in-situ anneal can improve the lifetime and lower the reverse saturation current density (J{sub 0}), however, this effect is material and base resistivity specific. PECVD antireflection (AR) coatings provided low reflectance and efficient front surface and bulk defect passivation. Conventional cells fabricated on FZ silicon by furnace diffusions and oxidations gave an efficiency of 18.8% due to greater short wavelength response and lower J{sub 0}.

  14. A 17 GHz molecular rectifier

    PubMed Central

    Trasobares, J.; Vuillaume, D.; Théron, D.; Clément, N.

    2016-01-01

    Molecular electronics originally proposed that small molecules sandwiched between electrodes would accomplish electronic functions and enable ultimate scaling to be reached. However, so far, functional molecular devices have only been demonstrated at low frequency. Here, we demonstrate molecular diodes operating up to 17.8 GHz. Direct current and radio frequency (RF) properties were simultaneously measured on a large array of molecular junctions composed of gold nanocrystal electrodes, ferrocenyl undecanethiol molecules and the tip of an interferometric scanning microwave microscope. The present nanometre-scale molecular diodes offer a current density increase by several orders of magnitude compared with that of micrometre-scale molecular diodes, allowing RF operation. The measured S11 parameters show a diode rectification ratio of 12 dB which is linked to the rectification behaviour of the direct current conductance. From the RF measurements, we extrapolate a cut-off frequency of 520 GHz. A comparison with the silicon RF-Schottky diodes, architecture suggests that the RF-molecular diodes are extremely attractive for scaling and high-frequency operation. PMID:27694833

  15. Silicon nanocrystals in SiN{sub x}/SiO{sub 2} hetero-superlattices: The loss of size control after thermal annealing

    SciTech Connect

    Zelenina, A. Zacharias, M.; Sarikov, A.; Zhigunov, D. M.; Weiss, C.; Zakharov, N.; Werner, P.; López-Conesa, L.; Peiró, F.

    2014-06-28

    Superlattices containing 3 nm thick silicon rich silicon nitride sublayers and 3 nm and 10 nm thick SiO{sub 2} barriers were prepared by plasma enhanced chemical vapor deposition. Despite the as-prepared samples represented a well-kept multilayer structure with smooth interfaces, the high temperature annealing resulted in the total destruction of multilayer structure in the samples containing 3 nm SiO{sub 2} barriers. Energy-filtered transmission electron microscopy images of these samples indicated a silicon nanoclusters formation with sizes of 2.5–12.5 nm, which were randomly distributed within the structure. Although in the sample with 10 nm SiO{sub 2} barriers some fragments of the multilayer structure could be still observed after thermal annealing, nevertheless, the formation of large nanocrystals with diameters up to 10 nm was confirmed by dark field transmission electron microscopy. Thus, in contrast to the previously published results, the expected size control of silicon nanocrystals was lost. According to the FTIR results, the thermal annealing of SiN{sub x}/SiO{sub 2} superlattices led to the formation of silicon nanocrystals in mostly oxynitride matrix. Annealed samples demonstrated a photoluminescence peak at 885 nm related to the luminescence of silicon nanocrystals, as confirmed by time-resolved photoluminescence measurements. The loss of nanocrystals size control is discussed in terms of the migration of oxygen atoms from the SiO{sub 2} barriers into the silicon rich silicon nitride sublayers. A thermodynamic mechanism responsible for this process is proposed. According to this mechanism, the driving force for the oxygen migration is the gain in the configuration entropy related to the relative arrangements of oxygen and nitrogen atoms.

  16. 35 GHz integrated circuit rectifying antenna with 33 percent efficiency

    NASA Technical Reports Server (NTRS)

    Yoo, T.-W.; Chang, K.

    1991-01-01

    A 35 GHz integrated circuit rectifying antenna (rectenna) has been developed using a microstrip dipole antenna and beam-lead mixer diode. Greater than 33 percent conversion efficiency has been achieved. The circuit should have applications in microwave/millimeter-wave power transmission and detection.

  17. 125. JOB NO. LINE 5044, INTERNATIONAL RECTIFIER CORP., RACHELLE LABORATORIES, ...

    Library of Congress Historic Buildings Survey, Historic Engineering Record, Historic Landscapes Survey

    125. JOB NO. LINE 5044, INTERNATIONAL RECTIFIER CORP., RACHELLE LABORATORIES, INC., LONG BEACH, CA, BY J.C. FULTON, SEPTEMBER 1982, LINE 5044, CLIFTON AND CO., ON FILE ENGINEERS DEPARTMENT, PORT OF LONG BEACH - Ford Motor Company Long Beach Assembly Plant, Assembly Building, 700 Henry Ford Avenue, Long Beach, Los Angeles County, CA

  18. 46 CFR 129.360 - Semiconductor-rectifier systems.

    Code of Federal Regulations, 2014 CFR

    2014-10-01

    ... Shipping COAST GUARD, DEPARTMENT OF HOMELAND SECURITY (CONTINUED) OFFSHORE SUPPLY VESSELS ELECTRICAL INSTALLATIONS Power Sources and Distribution Systems § 129.360 Semiconductor-rectifier systems. (a) Each... and 4/5.84.4 of the “Rules for Building and Classing Steel Vessels” of the American Bureau of Shipping....

  19. 46 CFR 129.360 - Semiconductor-rectifier systems.

    Code of Federal Regulations, 2012 CFR

    2012-10-01

    ... Shipping COAST GUARD, DEPARTMENT OF HOMELAND SECURITY (CONTINUED) OFFSHORE SUPPLY VESSELS ELECTRICAL INSTALLATIONS Power Sources and Distribution Systems § 129.360 Semiconductor-rectifier systems. (a) Each... and 4/5.84.4 of the “Rules for Building and Classing Steel Vessels” of the American Bureau of Shipping....

  20. 46 CFR 129.360 - Semiconductor-rectifier systems.

    Code of Federal Regulations, 2013 CFR

    2013-10-01

    ... Shipping COAST GUARD, DEPARTMENT OF HOMELAND SECURITY (CONTINUED) OFFSHORE SUPPLY VESSELS ELECTRICAL INSTALLATIONS Power Sources and Distribution Systems § 129.360 Semiconductor-rectifier systems. (a) Each... and 4/5.84.4 of the “Rules for Building and Classing Steel Vessels” of the American Bureau of Shipping....

  1. 37. VIEW OF SIX GAP ROTARY RECTIFIER FOR MAINTAINING CORONA ...

    Library of Congress Historic Buildings Survey, Historic Engineering Record, Historic Landscapes Survey

    37. VIEW OF SIX GAP ROTARY RECTIFIER FOR MAINTAINING CORONA DISCHARGE IN THE COTTRELL ELECTROSTATIC GENERATORS. THE SYSTEM WAS CAPABLE OF PROVIDING 88,000 VOLTS TO THE ELECTRODES WITHIN THE PRECIPITATOR CHAMBER THE UNIT WAS LOCATED TO THE REAR OF BOILER 904 IN AN ENCLOSED ROOM. - New York, New Haven & Hartford Railroad, Cos Cob Power Plant, Sound Shore Drive, Greenwich, Fairfield County, CT

  2. 46 CFR 183.360 - Semiconductor rectifier systems.

    Code of Federal Regulations, 2010 CFR

    2010-10-01

    ... 46 Shipping 7 2010-10-01 2010-10-01 false Semiconductor rectifier systems. 183.360 Section 183.360 Shipping COAST GUARD, DEPARTMENT OF HOMELAND SECURITY (CONTINUED) SMALL PASSENGER VESSELS (UNDER 100 GROSS TONS) ELECTRICAL INSTALLATION Power Sources and Distribution Systems § 183.360 Semiconductor...

  3. 46 CFR 183.360 - Semiconductor rectifier systems.

    Code of Federal Regulations, 2011 CFR

    2011-10-01

    ... 46 Shipping 7 2011-10-01 2011-10-01 false Semiconductor rectifier systems. 183.360 Section 183.360 Shipping COAST GUARD, DEPARTMENT OF HOMELAND SECURITY (CONTINUED) SMALL PASSENGER VESSELS (UNDER 100 GROSS TONS) ELECTRICAL INSTALLATION Power Sources and Distribution Systems § 183.360 Semiconductor...

  4. Silicon on graphite cloth

    SciTech Connect

    Rand, J.A.; Cotter, J.E.; Thomas, C.J.; Ingram, A.E.; Bai, Y.B.; Ruffins, T.R.; Barnett, A.M.

    1994-12-31

    A new polycrystalline silicon solar cell has been developed that utilizes commercially available graphite cloth as a substrate. This solar cell has achieved an energy conversion efficiency of 13.4% (AM1.5G). It is believed that this is a record efficiency for a silicon solar cell formed on a graphite substrate. The silicon-on-fabric structure is comprised of a thin layer of polycrystalline silicon grown directly on the graphite fabric substrate. The structure is fabricated by a low-cost ribbon process that avoids the expense and waste of wafering. The fabric substrate gives structural support to the thin device. Critical to the achievement of device quality silicon layers is control over impurities in the graphite fabric. The silicon-on-fabric technology has the potential to supply lightweight, low-cost solar cells to weight-sensitive markets at a fraction of the cost of conventionally thinned wafers.

  5. Controlled in situ boron doping of short silicon nanowires grown by molecular beam epitaxy

    NASA Astrophysics Data System (ADS)

    Das Kanungo, Pratyush; Zakharov, Nikolai; Bauer, Jan; Breitenstein, Otwin; Werner, Peter; Goesele, Ulrich

    2008-06-01

    Epitaxial silicon nanowires (NWs) of short heights (˜280nm) on Si ⟨111⟩ substrate were grown and doped in situ with boron on a concentration range of 1015-1019cm-3 by coevaporation of atomic Si and B by molecular beam epitaxy. Transmission electron microscopy revealed a single-crystalline structure of the NWs. Electrical measurements of the individual NWs confirmed the doping. However, the low doped (1015cm-3) and medium doped (3×1016 and 1×1017cm-3) NWs were heavily depleted by the surface states while the high doped (1018 and 1019cm-3) ones showed volume conductivities expected for the corresponding intended doping levels.

  6. Effect of temperature on rectified turpentine oil as a gutta-percha solvent.

    PubMed

    Kaplowitz, G J

    1994-04-01

    The purpose of this study was to determine the effect of increasing the temperature on the ability of rectified turpentine oil to dissolve gutta-percha. Rectified turpentine oil was warmed to 158 degrees F and then exposed to gutta-percha. This resulted in a significant increase (p < 0.01) in the ability of rectified turpentine oil to dissolve gutta-percha.

  7. A Series Circuit of Thermal Rectifiers: An Effective Way to Enhance Rectification Ratio.

    PubMed

    Hu, Shiqian; An, Meng; Yang, Nuo; Li, Baowen

    2017-02-01

    A novel approachis proposed to enhance the thermal rectification ratio, namely, arranging two thermal rectifiers in series. Through theoretical analysis and molecular dynamics simulations on graphene/phononic crystal structures, the results show that the series thermal rectifiers enhance thermal rectification ratio significantly, compared to a single rectifier. Meanwhile, the results of theoretical prediction match well with simulation results.

  8. A High Power Density Single-Phase PWM Rectifier with Active Ripple Energy Storage

    SciTech Connect

    Ning, Puqi; Wang, Ruxi; Wang, Fei; Boroyevich, Dushan

    2010-01-01

    It is well known that there exist second-order harmonic current and corresponding ripple voltage on dc bus for single phase PWM rectifiers. The low frequency harmonic current is normally filtered using a bulk capacitor in the bus which results in low power density. This paper proposed an active ripple energy storage method that can effectively reduce the energy storage capacitance. The feed-forward control method and design considerations are provided. Simulation and 15 kW experimental results are provided for verification purposes.

  9. Novel mini-reactor of silicone oil droplets for synthesis of morphology-controlled polymer particles.

    PubMed

    Nagao, Daisuke; Ohta, Tatsuya; Ishii, Haruyuki; Imhof, Arnout; Konno, Mikio

    2012-12-21

    Inside spaces of emulsion droplets can be used as mini-reactors for material synthesis. The novel application of sol-gel derived silicone oil droplets as mini-reactors was examined for the case of polymerization of styrene (St) and comonomers with the oil-soluble initiator 2,2'-azobis(2,4-dimethylvaleronitrile). Polydimethylsiloxane (PDMS) droplets prepared from dimethylsiloxane were used as the mini-reactors, in which the polymerization of St without comonomers was first conducted. In the polymerization, the St/PDMS volume ratio was varied from 0.025 to 0.10. After the polymerization, each PDMS droplet contained a polystyrene (PSt) particle. The St/PDMS ratio of 0.05 enabled the synthesis of micrometer-sized, spherical PSt particles with low polydispsersity. Copolymerization of St with comonomers having hydrophilic groups deformed the spherical shape of particles to lens-like or disk-like morphologies that were obtained with acrylic acid or sodium 4-styrene sulfonate, respectively. In another copolymerization, with divinylbenzene used as a cross-linker, hemispherical polymer particles were formed. To diversify the particle morphologies further, the proposed mini-reactor synthesis was combined with the recently proposed silicone oil droplet templating method (Ohta et al., 2012). Around the PDMS droplets containing a polymer particle, polymeric shells with a depression were successfully formed with the proposed method. The remaining PDMS oil inside the polymeric shells was extracted with ethanol, which caused hemispherical polymeric bowl-shaped capsules having a protrusion on the inside.

  10. Investigation of a combined platinum and electron lifetime control treatment for silicon

    NASA Astrophysics Data System (ADS)

    Jia, Yunpeng; Cui, Zhihang; Yang, Fei; Zhao, Bao; Zou, Shikai; Liang, Yongsheng

    2017-02-01

    In silicon, the effect of Combined Lifetime Treatment (CLT) involving platinum diffusion and subsequent electron irradiation is different from the separate treatments of platinum diffusion and electron irradiation, even the treatment of electron irradiation followed by platinum diffusion. In this paper, we investigated the experimental behavior of different kinds of lifetime treated samples. We found that the reverse leakage current (Irr) increases with the increasing platinum diffusion temperature or electron irradiation dose in the separate treatments. Conversely, Irr of the CLT samples decreased with rising platinum diffusion temperature at the same dose of subsequent electron irradiation. By deep-level transient spectroscopy (DLTS), a new energy level E7 (Ec -0.376 eV) was found in our CLT samples. The new level E7 suppresses the dominance of the deeper level E8 (Ec -0.476 eV), which is caused by electron irradiation directly and results in Irr's increase. The formation of the level E7 comes from the complex defect-combined effect between platinum atoms and silicon vacancies, and it affects device's characteristics finally. These research will be helpful to the development of platinum-diffused devices used in intense electron irradiation environments.

  11. Covalent and stable CuAAC modification of silicon surfaces for control of cell adhesion.

    PubMed

    Vutti, Surendra; Buch-Månson, Nina; Schoffelen, Sanne; Bovet, Nicolas; Martinez, Karen L; Meldal, Morten

    2015-03-23

    Stable primary functionalization of metal surfaces plays a significant role in reliable secondary attachment of complex functional molecules used for the interfacing of metal objects and nanomaterials with biological systems. In principle, this can be achieved through chemical reactions either in the vapor or liquid phase. In this work, we compared these two methods for oxidized silicon surfaces and thoroughly characterized the functionalization steps by tagging and fluorescence imaging. We demonstrate that the vapor-phase functionalization only provided transient surface modification that was lost on extensive washing. For stable surface modification, a liquid-phase method was developed. In this method, silicon wafers were decorated with azides, either by silanization with (3-azidopropyl)triethoxysilane or by conversion of the amine groups of an aminopropylated surface by means of the azido-transfer reaction. Subsequently, D-amino acid adhesion peptides could be immobilized on the surface by use of Cu(I)-catalyzed click chemistry. This enabled the study of cell adhesion to the metal surface. In contrast to unmodified surfaces, the peptide-modified surfaces were able to maintain cell adhesion during significant flow velocities in a microflow reactor.

  12. Cell technology: Advanced silicon sheet

    NASA Technical Reports Server (NTRS)

    Morrison, Andrew D.

    1986-01-01

    The Flat-plate Solar Array (FSA)-sponsored Fourth Silicon Stress/Strain Workshop reviewed, coordinated, and assessed the progress in understanding and controlling stress and strain during the crystal growth of silicon ribbons. dislocation electrical activity and limits on solar cell efficiency, and on studying the effects of dopants on EFG characteristics. Work on silicon for high-efficiency solar cells, stress-strain relationships in silicon ribbon, and high temperature deformation of dendritic web ribbon was also discussed.

  13. Silicon nanowires with controlled sidewall profile and roughness fabricated by thin-film dewetting and metal-assisted chemical etching

    NASA Astrophysics Data System (ADS)

    Azeredo, B. P.; Sadhu, J.; Ma, J.; Jacobs, K.; Kim, J.; Lee, K.; Eraker, J. H.; Li, X.; Sinha, S.; Fang, N.; Ferreira, P.; Hsu, K.

    2013-06-01

    This paper presents a non-lithographic approach to generate wafer-scale single crystal silicon nanowires (SiNWs) with controlled sidewall profile and surface morphology. The approach begins with silver (Ag) thin-film thermal dewetting, gold (Au) deposition and lift-off to generate a large-scale Au mesh on Si substrates. This is followed by metal-assisted chemical etching (MacEtch), where the Au mesh serves as a catalyst to produce arrays of smooth Si nanowires with tunable taper up to 13°. The mean diameter of the thus fabricated SiNWs can be controlled to range from 62 to 300 nm with standard deviations as small as 13.6 nm, and the areal coverage of the wire arrays can be up to 46%. Control of the mean wire diameter is achieved by controlling the pore diameter of the metallic mesh which is, in turn, controlled by adjusting the initial thin-film thickness and deposition rate. To control the wire surface morphology, a post-fabrication roughening step is added to the approach. This step uses Au nanoparticles and slow-rate MacEtch to produce rms surface roughness up to 3.6 nm.

  14. Performance of Thin-Window Silicon Drift Detectors

    SciTech Connect

    Carini, , G.A.; Chen, W.; De Geronimo, G.; Fried, J.; Gaskin, J.A.; Keister; J.W.; Li, Z.; Ramsey, B.D.; Rehak, P.; Siddons, D.P.

    2008-10-20

    Several sets of hexagonal Silicon Drift Detector (SDD) arrays were produced at BNL and by a commercial vendor, KETEK. Each array consists of 14 independent detectors (pixels) and two additional test pixels at two of the corners. The side of the detector upon which the X-ray radiation is incident (window side) has a thin junction covering the entire active area. The opposite side (device side) contains a drift-field electrode structure in the form of a hexagonal spiral and an electron collecting anode. There are 4 guard rings surrounding the 14-pixel array area on both sides of the detector. Within each array, 7 of the pixels have an aluminum field plate - interrupted spirals that stabilize the electric potential under the Si-SiO2 interface, while the other 7 do not. The drift field in the silicon volume is controlled by three biases: one is applied to a rectifying contact, one to the detector entrance window, and the third to a contact on the outer portion of the spiral common to all pixels in the array. Some arrays have been newly measured in NSLS beam line U3C at BNL. The complete assemblies were installed in the vacuum and cooled to ?27 C. During this run, spectra for energies ranging between 400 and 900 eV were collected in several pixels, some with field plates and others without. The detailed testing results of several arrays are reported here.

  15. Thermally controlled coupling of a rolled-up microtube integrated with a waveguide on a silicon electronic-photonic integrated circuit.

    PubMed

    Zhong, Qiuhang; Tian, Zhaobing; Veerasubramanian, Venkat; Dastjerdi, M Hadi Tavakoli; Mi, Zetian; Plant, David V

    2014-05-01

    We report on the first experimental demonstration of the thermal control of coupling strength between a rolled-up microtube and a waveguide on a silicon electronic-photonic integrated circuit. The microtubes are fabricated by selectively releasing a coherently strained GaAs/InGaAs heterostructure bilayer. The fabricated microtubes are then integrated with silicon waveguides using an abruptly tapered fiber probe. By tuning the gap between the microtube and the waveguide using localized heaters, the microtube-waveguide evanescent coupling is effectively controlled. With heating, the extinction ratio of a microtube whispering-gallery mode changes over an 18 dB range, while the resonant wavelength remains approximately unchanged. Utilizing this dynamic thermal tuning effect, we realize coupling modulation of the microtube integrated with the silicon waveguide at 2 kHz with a heater voltage swing of 0-6 V.

  16. Controlled in situ boron doping of short silicon nanowires grown by molecular beam epitaxy

    SciTech Connect

    Das Kanungo, Pratyush; Zakharov, Nikolai; Bauer, Jan; Breitenstein, Otwin; Werner, Peter; Goesele, Ulrich

    2008-06-30

    Epitaxial silicon nanowires (NWs) of short heights ({approx}280 nm) on Si <111> substrate were grown and doped in situ with boron on a concentration range of 10{sup 15}-10{sup 19} cm{sup -3} by coevaporation of atomic Si and B by molecular beam epitaxy. Transmission electron microscopy revealed a single-crystalline structure of the NWs. Electrical measurements of the individual NWs confirmed the doping. However, the low doped (10{sup 15} cm{sup -3}) and medium doped (3x10{sup 16} and 1x10{sup 17} cm{sup -3}) NWs were heavily depleted by the surface states while the high doped (10{sup 18} and 10{sup 19} cm{sup -3}) ones showed volume conductivities expected for the corresponding intended doping levels.

  17. Voltage controlling mechanisms in low resistivity silicon solar cells: A unified approach

    NASA Technical Reports Server (NTRS)

    Weizer, V. G.; Swartz, C. K.; Hart, R. E.; Godlewski, M. P.

    1984-01-01

    An experimental technique capable of resolving the dark saturation current into its base and emitter components is used as the basis of an analysis in which the voltage limiting mechanisms were determined for a variety of high voltage, low resistivity silicon solar cells. The cells studied include the University of Florida hi-low emitter cell, the NASA and the COMSAT multi-step diffused cells, the Spire Corporation ion-implanted emitter cell, and the University of New South Wales MINMIS and MINP cells. The results proved to be, in general, at variance with prior expectations. Most surprising was the finding that the MINP and the MINMIS voltage improvements are due, to a considerable extent, to a previously unrecognized optimization of the base component of the saturation current. This result is substantiated by an independent analysis of the material used to fabricate these devices.

  18. Voltage controlling mechanisms in low resistivity silicon solar cells - A unified approach

    NASA Technical Reports Server (NTRS)

    Weizer, V. G.; Swartz, C. K.; Hart, R. E.; Godlewski, M. P.

    1984-01-01

    An experimental technique capable of resolving the dark saturation current into its base and emitter components is used as the basis of an analysis in which the voltage limiting mechanisms were determined for a variety of high voltage, low resistivity silicon solar cells. The cells studied include the University of Florida hi-low emitter cell, the NASA and the COMSAT multi-step diffused cells, the Spire Corporation ion-implanted emitter cell, and the University of New South Wales MINMIS and MINP cells. The results proved to be, in general, at variance with prior expectations. Most surprising was the finding that the MINP and the MINMIS voltage improvements are due, to a considerable extent, to a previously unrecognized optimization of the base component of the saturation current. This result is substantiated by an independent analysis of the material used to fabricate these devices.

  19. A study of the factors which control the efficiency of ion-implanted silicon solar cells

    NASA Technical Reports Server (NTRS)

    Douglas, E. C.; Daiello, R. V.

    1980-01-01

    The objective of this work was to determine experimentally the ion-implantation parameters and furnace annealing conditions required to produce high-efficiency solar cells. A comprehensive experimental study was conducted in which the optimum ion-implantation parameters were found by a systematic variation of the implant parameters followed by detailed studies of solar-cell devices. Two furnace heat-treatment techniques were found which effectively anneal the implanted layers and at the same time preserve or improve the diffusion length in the bulk silicon. Detailed characteristics of both the junction and bulk properties of solar cells fabricated over the spectrum of implant parameters are discussed. Optimized implant parameters and annealing conditions were found which allow for the fabrication of 14-15-percent (AM1) efficient solar cells.

  20. Organic Vapour Sensing Properties of Area-Ordered and Size-Controlled Silicon Nanopillar

    PubMed Central

    Li, Wei; Feng, Zhilin; Dai, Enwen; Xu, Jie; Bai, Gang

    2016-01-01

    Here, a silicon nanopillar array (Si-NPA) was fabricated. It was studied as a room-temperature organic vapour sensor, and the ethanol and acetone gas sensing properties were detected with I-V curves. I-V curves show that these Si-NPA gas sensors are sensitive to ethanol and acetone organic vapours. The turn-on threshold voltage is about 0.5 V and the operating voltage is 3 V. With 1% ethanol gas vapour, the response time is 5 s, and the recovery time is 15 s. Furthermore, an evaluation of the gas sensor stability for Si-NPA was performed. The gas stability results are acceptable for practical detections. These excellent sensing characteristics can mainly be attributed to the change of the overall dielectric constant of Si-NPA caused by the physisorption of gas molecules on the pillars, and the filling of the gas vapour in the voids. PMID:27834846

  1. Enhanced light absorption of amorphous silicon thin film by substrate control and ion irradiation

    PubMed Central

    2014-01-01

    Large-area periodically aligned silicon nanopillar (PASiNP) arrays were fabricated by magnetic sputtering with glancing angle deposition (GLAD) on substrates coated by a monolayer of close-packed polystyrene (PS) nanospheres. The structure of PASiNP arrays could be manipulated by changing the diameter of PS nanospheres. Enhanced light absorptance within a wavelength range from 300 to 1,000 nm was observed as the diameter of nanopillars and porosity of PASiNP arrays increased. Meanwhile, Xe ion irradiation with dose from 1 × 1014 to 50 × 1014 ions/cm2 was employed to modify the surface morphology and top structure of thin films, and the effect of the irradiation on the optical bandgap was discussed. PACS code 81.15.Cd; 78.66.Jg; 61.80.Jh PMID:24717078

  2. Kinetics and fracture resistance of lithiated silicon nanostructure pairs controlled by their mechanical interaction

    NASA Astrophysics Data System (ADS)

    Lee, Seok Woo; Lee, Hyun-Wook; Ryu, Ill; Nix, William D.; Gao, Huajian; Cui, Yi

    2015-06-01

    Following an explosion of studies of silicon as a negative electrode for Li-ion batteries, the anomalous volumetric changes and fracture of lithiated single Si particles have attracted significant attention in various fields, including mechanics. However, in real batteries, lithiation occurs simultaneously in clusters of Si in a confined medium. Hence, understanding how the individual Si structures interact during lithiation in a closed space is necessary. Here, we demonstrate physical and mechanical interactions of swelling Si structures during lithiation using well-defined Si nanopillar pairs. Ex situ SEM and in situ TEM studies reveal that compressive stresses change the reaction kinetics so that preferential lithiation occurs at free surfaces when the pillars are mechanically clamped. Such mechanical interactions enhance the fracture resistance of lithiated Si by lessening the tensile stress concentrations in Si structures. This study will contribute to improved design of Si structures at the electrode level for high-performance Li-ion batteries.

  3. Kinetics and fracture resistance of lithiated silicon nanostructure pairs controlled by their mechanical interaction

    SciTech Connect

    Lee, Seok Woo; Lee, Hyun -Wook; Ryu, Ill; Nix, William D.; Gao, Huajian; Cui, Yi

    2015-06-26

    Following an explosion of studies of silicon as a negative electrode for Li-ion batteries, the anomalous volumetric changes and fracture of lithiated single Si particles have attracted significant attention in various fields, including mechanics. However, in real batteries, lithiation occurs simultaneously in clusters of Si in a confined medium. Hence, understanding how the individual Si structures interact during lithiation in a closed space is necessary. Here, we demonstrate physical and mechanical interactions of swelling Si structures during lithiation using well-defined Si nanopillar pairs. Ex situ SEM and in situ TEM studies reveal that compressive stresses change the reaction kinetics so that preferential lithiation occurs at free surfaces when the pillars are mechanically clamped. Such mechanical interactions enhance the fracture resistance of lithiated Si by lessening the tensile stress concentrations in Si structures. Lastly, this study will contribute to improved design of Si structures at the electrode level for high-performance Li-ion batteries.

  4. Southern Ocean control of silicon stable isotope distribution in the deep Atlantic Ocean

    NASA Astrophysics Data System (ADS)

    de Souza, Gregory F.; Reynolds, Ben C.; Rickli, Jörg; Frank, Martin; Saito, Mak A.; Gerringa, Loes J. A.; Bourdon, Bernard

    2012-06-01

    The fractionation of silicon (Si) stable isotopes by biological activity in the surface ocean makes the stable isotope composition of silicon (δ30Si) dissolved in seawater a sensitive tracer of the oceanic biogeochemical Si cycle. We present a high-precision dataset that characterizes the δ30Si distribution in the deep Atlantic Ocean from Denmark Strait to Drake Passage, documenting strong meridional and smaller, but resolvable, vertical δ30Si gradients. We show that these gradients are related to the two sources of deep and bottom waters in the Atlantic Ocean: waters of North Atlantic and Nordic origin carry a high δ30Si signature of ≥+1.7‰ into the deep Atlantic, while Antarctic Bottom Water transports Si with a low δ30Si value of around +1.2‰. The deep Atlantic δ30Si distribution is thus governed by the quasi-conservative mixing of Si from these two isotopically distinct sources. This disparity in Si isotope composition between the North Atlantic and Southern Ocean is in marked contrast to the homogeneity of the stable nitrogen isotope composition of deep ocean nitrate (δ15N-NO3). We infer that the meridional δ30Si gradient derives from the transport of the high δ30Si signature of Southern Ocean intermediate/mode waters into the North Atlantic by the upper return path of the meridional overturning circulation (MOC). The basin-scale deep Atlantic δ30Si gradient thus owes its existence to the interaction of the physical circulation with biological nutrient uptake at high southern latitudes, which fractionates Si isotopes between the abyssal and intermediate/mode waters formed in the Southern Ocean.

  5. Characterization of a controlled electroless deposition of copper thin film on germanium and silicon surfaces

    NASA Astrophysics Data System (ADS)

    Scudiero, Louis; Fasasi, Ayuba; Griffiths, Peter R.

    2011-02-01

    Nanofilms of copper were deposited on silicon and, for the first time, on polycrystalline germanium substrates by electroless deposition. Germanium or silicon disks were immersed in a 10 mM copper sulfate solution containing dilute hydrofluoric acid at room temperature. This simple one-step deposition does not require the use of laborious operations or expensive equipment, that the reaction medium be degassed, or that the film be annealed. The copper film grows in a few minutes, producing a film on both Ge and Si that covers a very large area of the substrate in contrast to other metals such as Au, Ag, Pt and Pd for which deposition on Ge and Si produces islands or dendrites. Atomic force microscopy, X-ray photoelectron spectroscopy (XPS) and powder X-ray diffraction (PXRD) were used to characterize the microstructure and confirmed the formation of elemental copper nanofilms. The AFM micrographs reveal a Stranski-Krastanov type of film growth (layers + islands) that varies with the length of time the Ge or Si substrate is immersed in the CuSO4 solution. Thicker films were observed on the Ge than on the Si substrate resulting in larger particles and rougher surface than on Si. XPS analysis shows that the elemental copper is deposited on both Ge and Si substrates and that the films oxidize over a period of weeks with air exposure at room temperature. Finally, PXRD data reveal two preferential orientations (1 1 1) and (2 0 0) for the copper crystallites grown on both Ge and Si. The same intensity of the (1 1 1)-texture was measured on both Ge and Si substrate which is an important result because it has been shown that the (1 1 1) texture reduces stress-induced voiding and increases resistance to electromigration in metal interconnects.

  6. Gate tunable graphene-silicon Ohmic/Schottky contacts

    NASA Astrophysics Data System (ADS)

    Chen, Chun-Chung; Chang, Chia-Chi; Li, Zhen; Levi, A. F. J.; Cronin, Stephen B.

    2012-11-01

    We show that the I-V characteristics of graphene-silicon junctions can be actively tuned from rectifying to Ohmic behavior by electrostatically doping the graphene with a polymer electrolyte gate. Under zero applied gate voltage, we observe rectifying I-V characteristics, demonstrating the formation of a Schottky junction at the graphene-silicon interface. Through appropriate gating, the Fermi energy of the graphene can be varied to match the conduction or valence band of silicon, thus forming Ohmic contacts with both n- and p-type silicon. Over the applied gate voltage range, the low bias conductance can be varied by more than three orders of magnitude. By varying the top gate voltage from -4 to +4 V, the Fermi energy of the graphene is shifted between -3.78 and -5.47 eV; a shift of ±0.85 eV from the charge neutrality point. Since the conduction and valence bands of the underlying silicon substrate lie within this range, at -4.01 and -5.13 eV, the Schottky barrier height and depletion width can be decreased to zero for both n- and p-type silicon under the appropriate top gating conditions. I-V characteristics taken under illumination show that the photo-induced current can be increased or decreased based on the graphene-silicon work function difference.

  7. High-stroke silicon-on-insulator MEMS nanopositioner: Control design for non-raster scan atomic force microscopy

    SciTech Connect

    Maroufi, Mohammad Fowler, Anthony G. Bazaei, Ali Moheimani, S. O. Reza

    2015-02-15

    A 2-degree of freedom microelectromechanical systems nanopositioner designed for on-chip atomic force microscopy (AFM) is presented. The device is fabricated using a silicon-on-insulator-based process and is designed as a parallel kinematic mechanism. It contains a central scan table and two sets of electrostatic comb actuators along each orthogonal axis, which provides displacement ranges greater than ±10 μm. The first in-plane resonance modes are located at 1274 Hz and 1286 Hz for the X and Y axes, respectively. To measure lateral displacements of the stage, electrothermal position sensors are incorporated in the design. To facilitate high-speed scans, the highly resonant dynamics of the system are controlled using damping loops in conjunction with internal model controllers that enable accurate tracking of fast sinusoidal set-points. To cancel the effect of sensor drift on controlled displacements, washout controllers are used in the damping loops. The feedback controlled nanopositioner is successfully used to perform several AFM scans in contact mode via a Lissajous scan method with a large scan area of 20 μm × 20 μm. The maximum scan rate demonstrated is 1 kHz.

  8. SiC MOSFET Based Single Phase Active Boost Rectifier with Power Factor Correction for Wireless Power Transfer Applications

    SciTech Connect

    Onar, Omer C; Tang, Lixin; Chinthavali, Madhu Sudhan; Campbell, Steven L; Miller , John M.

    2014-01-01

    Wireless Power Transfer (WPT) technology is a novel research area in the charging technology that bridges the utility and the automotive industries. There are various solutions that are currently being evaluated by several research teams to find the most efficient way to manage the power flow from the grid to the vehicle energy storage system. There are different control parameters that can be utilized to compensate for the change in the impedance due to variable parameters such as battery state-of-charge, coupling factor, and coil misalignment. This paper presents the implementation of an active front-end rectifier on the grid side for power factor control and voltage boost capability for load power regulation. The proposed SiC MOSFET based single phase active front end rectifier with PFC resulted in >97% efficiency at 137mm air-gap and >95% efficiency at 160mm air-gap.

  9. Semiconductor-metal phase transition of vanadium dioxide nanostructures on silicon substrate: Applications for thermal control of spacecraft

    SciTech Connect

    Leahu, G. L. Li Voti, R. Larciprete, M. C. Belardini, A. Mura, F. Sibilia, C.; Bertolotti, M.; Fratoddi, I.

    2014-06-19

    We present a detailed infrared study of the semiconductor-to-metal transition (SMT) in a vanadium dioxide (VO2) film deposited on silicon wafer. The VO2 phase transition is studied in the mid-infrared (MIR) region by analyzing the transmittance and the reflectance measurements, and the calculated emissivity. The temperature behaviour of the emissivity during the SMT put into evidence the phenomenon of the anomalous absorption in VO2 which has been explained by applying the Maxwell Garnett effective medium approximation theory, together with a strong hysteresis phenomenon, both useful to design tunable thermal devices to be applied for the thermal control of spacecraft. We have also applied the photothermal radiometry in order to study the changes in the modulated emissivity induced by laser. Experimental results show how the use of these techniques represent a good tool for a quantitative measurement of the optothermal properties of vanadium dioxide based structures.

  10. Quasi-phase-matched second harmonic generation in silicon nitride ring resonators controlled by static electric field.

    PubMed

    de Oliveira, Rafael E P; de Matos, Christiano J S

    2013-12-30

    Actively-controlled second harmonic generation in a silicon nitride ring resonator is proposed and simulated. The ring was designed to resonate at both pump and second harmonic wavelengths and quasi-phase-matched frequency conversion is induced by a periodic static electric field generated by voltage applied to electrodes arranged along the ring. Nonlinear propagation simulations were undertaken and an efficiency of -21.67 dB was calculated for 60 mW of pump power at 1550 nm and for a 30V applied voltage, which compares favorably with demonstrated all-optical second harmonic generation in integrated microresonators. Transient effects were also evaluated. The proposed design can be exploited for the construction of electro-optical devices based on nonlinear effects in CMOS compatible circuits.

  11. Silicon microfluidic flow focusing devices for the production of size-controlled PLGA based drug loaded microparticles.

    PubMed

    Keohane, Kieran; Brennan, Des; Galvin, Paul; Griffin, Brendan T

    2014-06-05

    The increasing realisation of the impact of size and surface properties on the bio-distribution of drug loaded colloidal particles has driven the application of micro fabrication technologies for the precise engineering of drug loaded microparticles. This paper demonstrates an alternative approach for producing size controlled drug loaded PLGA based microparticles using silicon Microfluidic Flow Focusing Devices (MFFDs). Based on the precise geometry and dimensions of the flow focusing channel, microparticle size was successfully optimised by modifying the polymer type, disperse phase (Qd) flow rate, and continuous phase (Qc) flow rate. The microparticles produced ranged in sizes from 5 to 50 μm and were highly monodisperse (coefficient of variation <5%). A comparison of Ciclosporin (CsA) loaded PLGA microparticles produced by MFFDs vs conventional production techniques was also performed. MFFDs produced microparticles with a narrower size distribution profile, relative to the conventional approaches. In-vitro release kinetics of CsA was found to be influenced by the production technique, with the MFFD approach demonstrating the slowest rate of release over 7 days (4.99 ± 0.26%). Finally, MFFDs were utilised to produce pegylated microparticles using the block co-polymer, PEG-PLGA. In contrast to the smooth microparticles produced using PLGA, PEG-PLGA microparticles displayed a highly porous surface morphology and rapid CsA release, with 85 ± 6.68% CsA released after 24h. The findings from this study demonstrate the utility of silicon MFFDs for the precise control of size and surface morphology of PLGA based microparticles with potential drug delivery applications.

  12. Fast Delayed Rectifier Potassium Current Required for Circadian Neural Activity

    PubMed Central

    JN, Itri; S, Michel; MJ, Vansteensel; JH, Meijer; CS, Colwell

    2005-01-01

    In mammals, the precise circadian timing of many biological processes depends on the generation of oscillations in neural activity of pacemaker cells in the suprachiasmatic nucleus (SCN). The ionic mechanisms underlying these rhythms are largely unknown. Using the mouse brain slice preparation, we demonstrate that the magnitude of fast delayed rectifier potassium currents exhibits a diurnal rhythm that peaks during the day. Importantly, this rhythm continues in constant darkness, providing the first demonstration of the circadian regulation of an intrinsic voltage–gated current in mammalian cells. Blocking this current prevented the daily rhythm in firing rate in SCN neurons. Kv3.1b and Kv3.2 potassium channels were found to be widely distributed within the SCN with higher expression during the day. We conclude that the fast delayed rectifier is necessary for the circadian modulation of electrical activity in SCN neurons, and represents an important part of the ionic basis for the generation of rhythmic output. PMID:15852012

  13. Development of a Thermal Rectifier Usable at High Temperature

    NASA Astrophysics Data System (ADS)

    Takeuchi, Tsunehiro; Goto, Hiroki; Toyama, Yasuhiro; Itoh, Takashi; Mikami, Masashi

    2011-05-01

    By using Al-based metallic alloys characterized by a disordered structure and a narrow pseudogap of a few hundred meV in energy width persisting at the Fermi level, we succeeded in preparing materials possessing a large increase of thermal conductivity with increasing temperature. This unusual increase of thermal conductivity is caused by the electronic structure effect known as the bipolar diffusion effect (BDE) in the context of the two-band model. A thermal rectifier was constructed using materials exhibiting the BDE. By showing the thermal rectification of the bulk sample prepared in this study, we demonstrate that our newly proposed idea of a thermal rectifier using the BDE is applicable for practical use.

  14. Rectifying behaviour of spin coated pn hetero-junction

    SciTech Connect

    Yogamalar, N. Rajeswari; Bose, A. Chandra

    2015-06-24

    Rectifying pn hetero- junction is fabricated with an acceptor p-type organic semiconductor namely tetra- chloro dihydroxy tetra-iodo fluorescein (Rose Bengal (RB)) followed by an inorganic n-type ZnO semiconductor on indium tin oxide (ITO) substrate. The n-type ZnO films are formed by unintentional doping and doping with aluminium (Al) and yttrium (Y) donors. The surface morphology and the distribution of grains are observed from scanning electron microscopy (SEM) and atomic force microscopy (AFM). The current-voltage (I-V) characteristic of the rectifying diode is measured to characterize the junction properties. The I-V plots obtained from the hetero- junction with electric contact shows a diode characteristic different from that of an ideal behavior. The overall efficiency of the diode exhibits a greater dependency on the film crystallinity, carrier concentration, and reverse saturation current.

  15. Porosity control in metal-assisted chemical etching of degenerately doped silicon nanowires.

    PubMed

    Balasundaram, Karthik; Sadhu, Jyothi S; Shin, Jae Cheol; Azeredo, Bruno; Chanda, Debashis; Malik, Mohammad; Hsu, Keng; Rogers, John A; Ferreira, Placid; Sinha, Sanjiv; Li, Xiuling

    2012-08-03

    We report the fabrication of degenerately doped silicon (Si) nanowires of different aspect ratios using a simple, low-cost and effective technique that involves metal-assisted chemical etching (MacEtch) combined with soft lithography or thermal dewetting metal patterning. We demonstrate sub-micron diameter Si nanowire arrays with aspect ratios as high as 180:1, and present the challenges in producing solid nanowires using MacEtch as the doping level increases in both p- and n-type Si. We report a systematic reduction in the porosity of these nanowires by adjusting the etching solution composition and temperature. We found that the porosity decreases from top to bottom along the axial direction and increases with etching time. With a MacEtch solution that has a high [HF]:[H(2)O(2)] ratio and low temperature, it is possible to form completely solid nanowires with aspect ratios of less than approximately 10:1. However, further etching to produce longer wires renders the top portion of the nanowires porous.

  16. Porosity control in metal-assisted chemical etching of degenerately doped silicon nanowires

    NASA Astrophysics Data System (ADS)

    Balasundaram, Karthik; Sadhu, Jyothi S.; Shin, Jae Cheol; Azeredo, Bruno; Chanda, Debashis; Malik, Mohammad; Hsu, Keng; Rogers, John A.; Ferreira, Placid; Sinha, Sanjiv; Li, Xiuling

    2012-08-01

    We report the fabrication of degenerately doped silicon (Si) nanowires of different aspect ratios using a simple, low-cost and effective technique that involves metal-assisted chemical etching (MacEtch) combined with soft lithography or thermal dewetting metal patterning. We demonstrate sub-micron diameter Si nanowire arrays with aspect ratios as high as 180:1, and present the challenges in producing solid nanowires using MacEtch as the doping level increases in both p- and n-type Si. We report a systematic reduction in the porosity of these nanowires by adjusting the etching solution composition and temperature. We found that the porosity decreases from top to bottom along the axial direction and increases with etching time. With a MacEtch solution that has a high [HF]:[H2O2] ratio and low temperature, it is possible to form completely solid nanowires with aspect ratios of less than approximately 10:1. However, further etching to produce longer wires renders the top portion of the nanowires porous.

  17. Hierarchical porous silicon carbide with controlled micropores and mesopores for electric double layer capacitors

    NASA Astrophysics Data System (ADS)

    Kim, Myeongjin; Oh, Ilgeun; Kim, Jooheon

    2015-05-01

    Three-dimensional hierarchical micro and mesoporous silicon carbide spheres (MMPSiC) are prepared by the template method and carbonization reaction via the aerosol spray drying method. The mesopores are generated by the self-assembly of the structure-directing agents, whereas the micropores are derived from the partial evaporation of Si atoms during carbonization. To investigate the effect of mesopore size on electrochemical performance, three types of MMPSiC with different mesopore size were fabricated by using three different structure directing agents (cetyltriethylammonium bromide (CTAB), Polyethylene glycol hexadecyl ether (Brij56), and Poly(ethylene glycol)-block-poly(propylene glycol)-block-poly(ethylene glycol) (P123)). The MMPSiC electrode prepared with Brij56 exhibits the highest charge storage capacity with a specific capacitance of 253.7 F g-1 at a scan rate of 5 mV s-1 and 87.9% rate performance from 5 to 500 mV s-1 in 1 M Na2SO4 aqueous electrolyte. The outstanding electrochemical performance might be because of the ideal mesopore size, which effectively reduces the resistant pathways for ion diffusion in the pores and provides a large accessible surface area for ion transport/charge storage. These encouraging results demonstrate that the MMPSiC prepared with Brij56 is a promising candidate for high performance electrode materials for supercapacitors.

  18. Kinetics and fracture resistance of lithiated silicon nanostructure pairs controlled by their mechanical interaction

    DOE PAGES

    Lee, Seok Woo; Lee, Hyun -Wook; Ryu, Ill; ...

    2015-06-26

    Following an explosion of studies of silicon as a negative electrode for Li-ion batteries, the anomalous volumetric changes and fracture of lithiated single Si particles have attracted significant attention in various fields, including mechanics. However, in real batteries, lithiation occurs simultaneously in clusters of Si in a confined medium. Hence, understanding how the individual Si structures interact during lithiation in a closed space is necessary. Here, we demonstrate physical and mechanical interactions of swelling Si structures during lithiation using well-defined Si nanopillar pairs. Ex situ SEM and in situ TEM studies reveal that compressive stresses change the reaction kinetics somore » that preferential lithiation occurs at free surfaces when the pillars are mechanically clamped. Such mechanical interactions enhance the fracture resistance of lithiated Si by lessening the tensile stress concentrations in Si structures. Lastly, this study will contribute to improved design of Si structures at the electrode level for high-performance Li-ion batteries.« less

  19. Kinetics and fracture resistance of lithiated silicon nanostructure pairs controlled by their mechanical interaction

    SciTech Connect

    Lee, Seok Woo; Lee, Hyun-Wook; Ryu, Ill; Nix, William D.; Gao, Huajian; Cui, Yi; /Stanford U., Materials Sci. Dept. /SLAC

    2015-06-01

    Following an explosion of studies of silicon as a negative electrode for Li-ion batteries, the anomalous volumetric changes and fracture of lithiated single Si particles have attracted significant attention in various fields, including mechanics. However, in real batteries, lithiation occurs simultaneously in clusters of Si in a confined medium. Hence, understanding how the individual Si structures interact during lithiation in a closed space is necessary. Herein, we demonstrate physical/mechanical interactions of swelling Si structures during lithiation using well-defined Si nanopillar pairs. Ex situ SEM and in situ TEM studies reveal that compressive stresses change the reaction kinetics so that preferential lithiation occurs at free surfaces when the pillars are mechanically clamped. Such mechanical interactions enhance the fracture resistance of This material is based upon work supported by the U.S. Department of Energy, Office of Science, Office of Basic Energy Sciences, Division of Materials Sciences and Engineering, under Contract No. DE-AC02-76SF00515. SLAC-PUB-16300 2 lithiated Si by lessening the tensile stress concentrations in Si structures. This study will contribute to improved design of Si structures at the electrode level for high performance Li-ion batteries.

  20. Glass frit bonding with controlled width and height using a two-step wet silicon etching procedure

    NASA Astrophysics Data System (ADS)

    Yifang, Liu; Daner, Chen; Liwei, Lin; Gaofeng, Zheng; Jianyi, Zheng; Lingyun, Wang; Daoheng, Sun

    2016-03-01

    A simple and versatile two-step silicon wet etching technique for the control of the width and height of the glass frit bonding layer has been developed to improve bonding strength and reliability in wafer-level microelectromechanical systems (MEMS) packaging processes. The height of the glass frit bonding layer is set by the design of a vertical reference wall which regulates the distance between the silicon wafer and the encapsulation capping substrate. On the other hand, the width of the bonding layer is constrained between two micro grooves which are used to accommodate the spillages of extra glass frit during the bonding process. An optimized thermal bonding process, including the formation of glass liquid, removal of gas bubbles under vacuum and the filling of voids under normal atmospheric condition has been developed to suppress the formation of the bubbles/voids. The stencil printing and pre-sintering processes for the glass frit have been characterized before the thermal bonding process under different magnitudes of bonding pressure. The bonding gap thickness is found to be equal to the height of the reference wall of 10 μm in the prototype design. The bubbles/voids are found to be suppressed effectively and the bonding strength increases from 10.2 to 19.1 MPa as compared with a conventional thermal annealing process in air. Experimentally, prototype samples are measured to have passed the high hermetic sealing leakage tests of 5  ×  10-8 atm cc s-1.

  1. Periodically poled silicon

    NASA Astrophysics Data System (ADS)

    Hon, Nick K.; Tsia, Kevin K.; Solli, Daniel R.; Khurgin, Jacob B.; Jalali, Bahram

    2010-02-01

    Bulk centrosymmetric silicon lacks second-order optical nonlinearity χ(2) - a foundational component of nonlinear optics. Here, we propose a new class of photonic device which enables χ(2) as well as quasi-phase matching based on periodic stress fields in silicon - periodically-poled silicon (PePSi). This concept adds the periodic poling capability to silicon photonics, and allows the excellent crystal quality and advanced manufacturing capabilities of silicon to be harnessed for devices based on χ(2)) effects. The concept can also be simply achieved by having periodic arrangement of stressed thin films along a silicon waveguide. As an example of the utility, we present simulations showing that mid-wave infrared radiation can be efficiently generated through difference frequency generation from near-infrared with a conversion efficiency of 50% based on χ(2) values measurements for strained silicon reported in the literature [Jacobson et al. Nature 441, 199 (2006)]. The use of PePSi for frequency conversion can also be extended to terahertz generation. With integrated piezoelectric material, dynamically control of χ(2)nonlinearity in PePSi waveguide may also be achieved. The successful realization of PePSi based devices depends on the strength of the stress induced χ(2) in silicon. Presently, there exists a significant discrepancy in the literature between the theoretical and experimentally measured values. We present a simple theoretical model that produces result consistent with prior theoretical works and use this model to identify possible reasons for this discrepancy.

  2. RF rectifiers for EM power harvesting in a Deep Brain Stimulating device.

    PubMed

    Hosain, Md Kamal; Kouzani, Abbas Z; Tye, Susannah; Kaynak, Akif; Berk, Michael

    2015-03-01

    A passive deep brain stimulation (DBS) device can be equipped with a rectenna, consisting of an antenna and a rectifier, to harvest energy from electromagnetic fields for its operation. This paper presents optimization of radio frequency rectifier circuits for wireless energy harvesting in a passive head-mountable DBS device. The aim is to achieve a compact size, high conversion efficiency, and high output voltage rectifier. Four different rectifiers based on the Delon doubler, Greinacher voltage tripler, Delon voltage quadrupler, and 2-stage charge pumped architectures are designed, simulated, fabricated, and evaluated. The design and simulation are conducted using Agilent Genesys at operating frequency of 915 MHz. A dielectric substrate of FR-4 with thickness of 1.6 mm, and surface mount devices (SMD) components are used to fabricate the designed rectifiers. The performance of the fabricated rectifiers is evaluated using a 915 MHz radio frequency (RF) energy source. The maximum measured conversion efficiency of the Delon doubler, Greinacher tripler, Delon quadrupler, and 2-stage charge pumped rectifiers are 78, 75, 73, and 76 % at -5 dBm input power and for load resistances of 5-15 kΩ. The conversion efficiency of the rectifiers decreases significantly with the increase in the input power level. The Delon doubler rectifier provides the highest efficiency at both -5 and 5 dBm input power levels, whereas the Delon quadrupler rectifier gives the lowest efficiency for the same inputs. By considering both efficiency and DC output voltage, the charge pump rectifier outperforms the other three rectifiers. Accordingly, the optimised 2-stage charge pumped rectifier is used together with an antenna to harvest energy in our DBS device.

  3. Microcomputer controlled soft start of motor

    NASA Astrophysics Data System (ADS)

    Gao, Miao; Wang, Yanpeng; Li, Shian

    2005-12-01

    Improving the starting characteristics of a motor is an important part of the motor control. An intelligent soft starting technique was adopted in the starter and used in the present study because of its many advantages compared with conventional starting processes. The core of the soft starter was a single chip (Atmel 8098), its soul was the software and its control object was a Silicon Controlled Rectifier (SCR). The starter achieved not only current-limit starting, but also closed-loop control with a stator current detection circuit. In conclusion, as a result of digital control, starting characteristic can be conveniently chosen according to the load. In addition the starter is of small size, and starting is smooth and reliable due to current feedback.

  4. Single-Phase Active Boost Rectifier with Power Factor Correction for Wireless Power Transfer Applications

    SciTech Connect

    Chinthavali, Madhu Sudhan; Onar, Omer C; Miller, John M; Tang, Lixin

    2013-01-01

    Wireless Power Transfer (WPT) technology is a novel research area in the charging technology that bridges utility and the automotive industries. There are various solutions that are currently being evaluated by several research teams to find the most efficient way to manage the power flow from the grid to the vehicle energy storage system. There are different control parameters that can be utilized to compensate for the change in the impedance. To understand the power flow through the system this paper presents a novel approach to the system model and the impact of different control parameters on the load power. The implementation of an active front-end rectifier on the grid side for power factor control and voltage boost capability for load power regulation is also discussed.

  5. High reliability megawatt transformer/rectifier

    NASA Technical Reports Server (NTRS)

    Zwass, Samuel; Ashe, Harry; Peters, John W.

    1991-01-01

    The goal of the two phase program is to develop the technology and design and fabricate ultralightweight high reliability DC to DC converters for space power applications. The converters will operate from a 5000 V dc source and deliver 1 MW of power at 100 kV dc. The power weight density goal is 0.1 kg/kW. The cycle to cycle voltage stability goals was + or - 1 percent RMS. The converter is to operate at an ambient temperature of -40 C with 16 minute power pulses and one hour off time. The uniqueness of the design in Phase 1 resided in the dc switching array which operates the converter at 20 kHz using Hollotron plasma switches along with a specially designed low loss, low leakage inductance and a light weight high voltage transformer. This approach reduced considerably the number of components in the converter thereby increasing the system reliability. To achieve an optimum transformer for this application, the design uses four 25 kV secondary windings to produce the 100 kV dc output, thus reducing the transformer leakage inductance, and the ac voltage stresses. A specially designed insulation system improves the high voltage dielectric withstanding ability and reduces the insulation path thickness thereby reducing the component weight. Tradeoff studies and tests conducted on scaled-down model circuits and using representative coil insulation paths have verified the calculated transformer wave shape parameters and the insulation system safety. In Phase 1 of the program a converter design approach was developed and a preliminary transformer design was completed. A fault control circuit was designed and a thermal profile of the converter was also developed.

  6. An Adaptive Reconfigurable Active Voltage Doubler/Rectifier for Extended-Range Inductive Power Transmission

    PubMed Central

    Lee, Hyung-Min; Ghovanloo, Maysam

    2014-01-01

    We present an adaptive reconfigurable active voltage doubler (VD)/rectifier (REC) (VD/REC) in standard CMOS, which can adaptively change its topology to either a VD or a REC by sensing the output voltage, leading to more robust inductive power transmission over an extended range. Both active VD and REC modes provide much lower dropout voltage and far better power conversion efficiency (PCE) compared to their passive counterparts by adopting offset-controlled high-speed comparators that drive the rectifying switches at proper times in the high-frequency band. We have fabricated the active VD/REC in a 0.5-µm 3-metal 2-poly CMOS process, occupying 0.585 mm2 of chip area. In an exemplar setup, VD/REC extended the power transmission range by 33% (from 6 to 8 cm) in relative coil distance and 41.5% (from 53° to 75°) in relative coil orientation compared to using the REC alone. While providing 3.1-V dc output across a 500-Ω load from 2.15- (VD) and 3.7-V (REC) peak ac inputs at 13.56 MHz, VD/REC achieved measured PCEs of 70% and 77%, respectively. PMID:24633369

  7. Structure and dynamics of the pore of inwardly rectifying K(ATP) channels.

    PubMed

    Loussouarn, G; Makhina, E N; Rose, T; Nichols, C G

    2000-01-14

    Inwardly rectifying K(+) currents are generated by a complex of four Kir (Kir1-6) subunits. Pore properties are conferred by the second transmembrane domain (M2) of each subunit. Using cadmium ions as a cysteine-interacting probe, we examined the accessibility of substituted cysteines in M2 of the Kir6.2 subunit of inwardly rectifying K(ATP) channels. The ability of Cd(2+) ions to inhibit channels was used as the estimate of accessibility. The distribution of Cd(2+) accessibility is consistent with an alpha-helical structure of M2. The apparent surface of reactivity is broad, and the most reactive residues correspond to the solvent-accessible residues in the bacterial KcsA channel crystal structure. In several mutants, single channel measurements indicated that inhibition occurred by a single transition from the open state to a zero-conductance state. Analysis of currents expressed from mixtures of control and L164C mutant subunits indicated that at least three cysteines are required for coordination of the Cd(2+) ion. Application of phosphatidylinositol 4,5-diphosphate to inside-out membrane patches stabilized the open state of all mutants and also reduced cadmium sensitivity. Moreover, the Cd(2+) sensitivity of several mutants was greatly reduced in the presence of inhibitory ATP concentrations. Taken together, these results are consistent with state-dependent accessibility of single Cd(2+) ions to coordination sites within a relatively narrow inner vestibule.

  8. High aspect ratio silicon nanowires control fibroblast adhesion and cytoskeleton organization

    NASA Astrophysics Data System (ADS)

    Andolfi, Laura; Murello, Anna; Cassese, Damiano; Ban, Jelena; Dal Zilio, Simone; Lazzarino, Marco

    2017-04-01

    Cell–cell and cell–matrix interactions are essential to the survival and proliferation of most cells, and are responsible for triggering a wide range of biochemical pathways. More recently, the biomechanical role of those interactions was highlighted, showing, for instance, that adhesion forces are essential for cytoskeleton organization. Silicon nanowires (Si NWs) with their small size, high aspect ratio and anisotropic mechanical response represent a useful model to investigate the forces involved in the adhesion processes and their role in cellular development. In this work we explored and quantified, by single cell force spectroscopy (SCFS), the interaction of mouse embryonic fibroblasts with a flexible forest of Si NWs. We observed that the cell adhesion forces are comparable to those found on collagen and bare glass coverslip, analogously the membrane tether extraction forces are similar to that on collagen but stronger than that on bare flat glass. Cell survival did not depend significantly on the substrate, although a reduced proliferation after 36 h was observed. On the contrary both cell morphology and cytoskeleton organization revealed striking differences. The cell morphology on Si-NW was characterized by a large number of filopodia and a significant decrease of the cell mobility. The cytoskeleton organization was characterized by the absence of actin fibers, which were instead dominant on collagen and flat glass support. Such findings suggest that the mechanical properties of disordered Si NWs, and in particular their strong asymmetry, play a major role in the adhesion, morphology and cytoskeleton organization processes. Indeed, while adhesion measurements by SCFS provide out-of-plane forces values consistent with those measured on conventional substrates, weaker in-plane forces hinder proper cytoskeleton organization and migration processes.

  9. Femtosecond laser-controlled self-assembly of amorphous-crystalline nanogratings in silicon

    NASA Astrophysics Data System (ADS)

    Puerto, Daniel; Garcia-Lechuga, Mario; Hernandez-Rueda, Javier; Garcia-Leis, Adianez; Sanchez-Cortes, Santiago; Solis, Javier; Siegel, Jan

    2016-07-01

    Self-assembly (SA) of molecular units to form regular, periodic extended structures is a powerful bottom-up technique for nanopatterning, inspired by nature. SA can be triggered in all classes of solid materials, for instance, by femtosecond laser pulses leading to the formation of laser-induced periodic surface structures (LIPSS) with a period slightly shorter than the laser wavelength. This approach, though, typically involves considerable material ablation, which leads to an unwanted increase of the surface roughness. We present a new strategy to fabricate high-precision nanograting structures in silicon, consisting of alternating amorphous and crystalline lines, with almost no material removal. The strategy can be applied to static irradiation experiments and can be extended into one and two dimensions by scanning the laser beam over the sample surface. We demonstrate that lines and areas with parallel nanofringe patterns can be written by an adequate choice of spot size, repetition rate and scan velocity, keeping a constant effective pulse number (N eff) per area for a given laser wavelength. A deviation from this pulse number leads either to inhomogeneous or ablative structures. Furthermore, we demonstrate that this approach can be used with different laser systems having widely different wavelengths (1030 nm, 800 nm, 400 nm), pulse durations (370 fs, 100 fs) and repetition rates (500 kHz, 100 Hz, single pulse) and that the grating period can also be tuned by changing the angle of laser beam incidence. The grating structures can be erased by irradiation with a single nanosecond laser pulse, triggering recrystallization of the amorphous stripes. Given the large differences in electrical conductivity between the two phases, our structures could find new applications in nanoelectronics.

  10. Atomic scale control and understanding of cubic silicon carbide surface reconstructions, nanostructures and nanochemistry

    NASA Astrophysics Data System (ADS)

    Soukiassian, Patrick G.; Enriquez, Hanna B.

    2004-05-01

    The atomic scale ordering and properties of cubic silicon carbide (bgr-SiC) surfaces and nanostructures are investigated by atom-resolved room and high-temperature scanning tunnelling microscopy (STM) and spectroscopy (STS), synchrotron radiation-based valence band and core level photoelectron spectroscopy (VB-PES, CL-PES) and grazing incidence x-ray diffraction (GIXRD). In this paper, we review the latest results on the atomic scale understanding of (i) the structure of bgr-SiC(100) surface reconstructions, (ii) temperature-induced metallic surface phase transition, (iii) one dimensional Si(C) self-organized nanostructures having unprecedented characteristics, and on (iv) nanochemistry at SiC surfaces with hydrogen. The organization of these surface reconstructions as well as the 1D nanostructures' self-organization are primarily driven by surface stress. In this paper, we address such important issues as (i) the structure of the Si-rich 3 × 2, the Si-terminated c (4 × 2), the C-terminated c (2 × 2) reconstructions of the bgr-SiC(100) surface, (ii) the temperature-induced reversible {\\mathrm {c}}(4\\times 2) \\Leftrightarrow 2\\times 1 metallic phase transition, (iii) the formation of highly stable (up to 900 °C) Si atomic and vacancy lines, (iv) the temperature-induced sp to sp3 diamond like surface transformation, and (v) the first example of H-induced semiconductor surface metallization on the bgr-SiC (100) 3 × 2 surface. The results are discussed and compared to other experimental and theoretical investigations.

  11. Control of Parameters Influencing the Thermal Imprint of Parylene/Silicon

    NASA Astrophysics Data System (ADS)

    Youn, Sung-Won; Goto, Hiroshi; Oyama, Shoji; Takahashi, Masaharu; Maeda, Ryutaro

    2007-09-01

    The study aims to investigate the possible defects that may occur during imprinting of poly(chloro- p-xylylene) (parylene-C) film (thermal oxidation, delamination, thermal cracking and insufficient filling at the periphery) and to overcome them by modifying the process conditions and mold design. X-ray diffraction (XRD) analyses results for the parylene-C films indicated that higher deposition pressure leads to a lower crystallinity of parylene-C film. By tuning the process conditions and mold design, patterned fields (composed of arrays of 25-μm-high, 10-μm-wide and 1-mm-long lines with 10 μm spacing) in 0.4-mm-thick and 20-mm-sized nickel molds could be successfully replicated on 60-μm-thick parylene-C films deposited at both 25 and 45 mTorr. Complete filling over the whole imprint area could be achieved at <270 °C with the press force at 2 kN and the press hold time of 900 s with the aid of an implemented dummy pattern. Both thermal cracking and delamination could be avoided, even at 270 °C, under the established process conditions and mold design with the help of an adhesion promotion treatment of silicon substrates (SF6 plasma etching for 2 min and spin-coating of KBM-503-based solution). Furthermore, the molds used for paryelne imprinting could be cleaned by dipping in chloronaphthalene solution at >175 °C, followed by an oxygen plasma etching.

  12. High aspect ratio silicon nanowires control fibroblast adhesion and cytoskeleton organization.

    PubMed

    Andolfi, Laura; Murello, Anna; Cassese, Damiano; Ban, Jelena; Dal Zilio, Simone; Lazzarino, Marco

    2017-04-18

    Cell-cell and cell-matrix interactions are essential to the survival and proliferation of most cells, and are responsible for triggering a wide range of biochemical pathways. More recently, the biomechanical role of those interactions was highlighted, showing, for instance, that adhesion forces are essential for cytoskeleton organization. Silicon nanowires (Si NWs) with their small size, high aspect ratio and anisotropic mechanical response represent a useful model to investigate the forces involved in the adhesion processes and their role in cellular development. In this work we explored and quantified, by single cell force spectroscopy (SCFS), the interaction of mouse embryonic fibroblasts with a flexible forest of Si NWs. We observed that the cell adhesion forces are comparable to those found on collagen and bare glass coverslip, analogously the membrane tether extraction forces are similar to that on collagen but stronger than that on bare flat glass. Cell survival did not depend significantly on the substrate, although a reduced proliferation after 36 h was observed. On the contrary both cell morphology and cytoskeleton organization revealed striking differences. The cell morphology on Si-NW was characterized by a large number of filopodia and a significant decrease of the cell mobility. The cytoskeleton organization was characterized by the absence of actin fibers, which were instead dominant on collagen and flat glass support. Such findings suggest that the mechanical properties of disordered Si NWs, and in particular their strong asymmetry, play a major role in the adhesion, morphology and cytoskeleton organization processes. Indeed, while adhesion measurements by SCFS provide out-of-plane forces values consistent with those measured on conventional substrates, weaker in-plane forces hinder proper cytoskeleton organization and migration processes.

  13. Tuning cell adhesion by controlling the roughness and wettability of 3D micro/nano silicon structures.

    PubMed

    Ranella, A; Barberoglou, M; Bakogianni, S; Fotakis, C; Stratakis, E

    2010-07-01

    The aim of this study is to investigate fibroblast cell adhesion and viability on highly rough three-dimensional (3D) silicon (Si) surfaces with gradient roughness ratios and wettabilities. Culture surfaces were produced by femtosecond (fs) laser structuring of Si wafers and comprised forests of conical spikes exhibiting controlled dual-scale roughness at both the micro- and the nano-scale. Variable roughness could be achieved by changing the laser pulse fluence and control over wettability and therefore surface energy could be obtained by covering the structures with various conformal coatings, which altered the surface chemistry without, however, affecting morphology. The results showed that optimal cell adhesion was obtained for small roughness ratios, independently of the surface wettability and chemistry, indicating a non-monotonic dependence of fibroblast adhesion on surface energy. Additionally, it was shown that, for the same degree of roughness, a proper change in surface energy could switch the behaviour from cell-phobic to cell-philic and vice versa, transition that was always correlated to surface wettability. These experimental findings are discussed on the basis of previous theoretical models describing the relation of cell response to surface energy. The potential use of the patterned Si substrates as model scaffolds for the systematic exploration of the role of 3D micro/nano morphology and/or surface energy on cell adhesion and growth is envisaged.

  14. Bi-Sn alloy catalyst for simultaneous morphology and doping control of silicon nanowires in radial junction solar cells

    SciTech Connect

    Yu, Zhongwei; Lu, Jiawen; Qian, Shengyi; Xu, Jun; Xu, Ling; Wang, Junzhuan; Shi, Yi; Chen, Kunji; Yu, Linwei E-mail: linwei.yu@polytechnique.edu

    2015-10-19

    Low-melting point metals such as bismuth (Bi) and tin (Sn) are ideal choices for mediating a low temperature growth of silicon nanowires (SiNWs) for radial junction thin film solar cells. The incorporation of Bi catalyst atoms leads to sufficient n-type doping in the SiNWs core that exempts the use of hazardous dopant gases, while an easy morphology control with pure Bi catalyst has never been demonstrated so far. We here propose a Bi-Sn alloy catalyst strategy to achieve both a beneficial catalyst-doping and an ideal SiNW morphology control. In addition to a potential of further growth temperature reduction, we show that the alloy catalyst can remain quite stable during a vapor-liquid-solid growth, while providing still sufficient n-type catalyst-doping to the SiNWs. Radial junction solar cells constructed over the alloy-catalyzed SiNWs have demonstrated a strongly enhanced photocurrent generation, thanks to optimized nanowire morphology, and largely improved performance compared to the reference samples based on the pure Bi or Sn-catalyzed SiNWs.

  15. Performance Analysis of Rectifier in NH3-H2O Absorprtion Heat Pump

    NASA Astrophysics Data System (ADS)

    Tsujimori, Atsushi; Ozaki, Eiichi; Nakao, Kazushige

    It is necessary to have rectifier in NH3-H20 absorption cycle in order to remove steam from ammonia and steam mixed vapor that is regenerated in generator. Although many studies have made to investigate the performance of rectifier using various fluids experimentally, few theoretical analysis has made without any constant from experimental data. In this study in order to investigate the characteristic of rectifying process, experimental and analytical approach was made concerning plate-type rectifier. In the experiment, the effect of vapor flow rate and NH3 mass concentration of solution on rectifying performance were investigated. And in the analysis the model of heat and mass transfer was proposed considering the distribution of mass concentration in boundary layer. As a result it was found that NH3 mass concentration at rectifier outlet slightly decreased as vapor flow rate increased and that the model could predict NH3 mass concentration in outlet vapor for various concentration in solution.

  16. Intravitreal controlled release of dexamethasone from engineered microparticles of porous silicon dioxide.

    PubMed

    Wang, Chengyun; Hou, Huiyuan; Nan, Kaihui; Sailor, Michael J; Freeman, William R; Cheng, Lingyun

    2014-12-01

    Dexamethasone is a glucocorticoid that is widely used in the ophthalmic arena. The recent FDA approved dexamethasone implant can provide a three month efficacy but with high rate of drug related cataract and high intraocular pressure (IOP). It seems that higher steroid in aqueous humor and around lens may be associated with these complications based on clinical fact that higher IOP was observed with intravitreal triamcinolone acetonide (TA) than with subtenon TA. We hypothesize that placing a sustained dexamethasone release system near back of the eye through a fine needle can maximize efficacy while mitigate higher rate of IOP rise and cataract. To develop a sustained intravitreal dexamethasone delivery system, porous silicon dioxide (pSiO2) microparticles were fabricated and functionalized with amines as well as carboxyl groups. Dexamethasone was conjugated to pSiO2 through the Steglich Esterification Reaction between hydroxyl of dexamethasone and carboxyl groups on the pSiO2. The drug loading was confirmed by Fourier transform infrared spectroscopy (FTIR) and loading efficiency was quantitated using thermogravimetric analysis (TGA). In vitro release was conducted for three months and dexamethasone was confirmed in the released samples using liquid chromatography-tandem mass spectrometry (LC/MS/MS). A pilot ocular safety and determination of vitreous drug level was performed in rabbit eyes. The drug loading study demonstrated that loading efficiency was from 5.96% to 10.77% depending on the loading reaction time, being higher with longer loading reaction time before reaching saturation around 7 days. In vitro drug release study revealed that dexamethasone release from pSiO2 particles was sustainable for over 90 days and was 80 days longer than free dexamethasone or infiltration-loaded pSiO2 particle formulation in the same setting. Pilot in vivo study demonstrated no sign of ocular adverse reaction in rabbit eyes following a single 3 mg intravitreal injection and

  17. Intravitreal Controlled Release of Dexamethasone from Engineered Microparticles of Porous Silicon Dioxide

    PubMed Central

    Wang, Chengyun; Hou, Huiyuan; Nan, Kaihui; Sailor, Michael J; Freeman, William R.; Cheng, Lingyun

    2014-01-01

    Dexamethasone is a glucocorticoid that is widely used in the ophthalmic arena. The recent FDA approved dexamethasone implant can provide a three month efficacy but with high rate of drug related cataract and high intraocular pressure (IOP). It seems that higher steroid in aqueous humor and around lens may be associated with these complications based on clinical fact that higher IOP was observed with intravitreal triamcinolone acetonide (TA) than with subtenon TA. We hypothesize that placing a sustained dexamethasone release system near back of the eye through a fine needle can maximize efficacy while mitigate higher rate of IOP rise and cataract. To develop a sustained intravitreal dexamethasone delivery system, porous silicon dioxide (pSiO2) microparticles were fabricated and functionalized with amines as well as carboxyl groups. Dexamethasone was conjugated to pSiO2 through the Steglich Esterificaion Reaction between hydroxyl of dexamethasone and carboxyl groups on the pSiO2. The drug loading was confirmed by Fourier transform infrared spectroscopy (FTIR) and loading efficiency was quantitated using thermogravimetric analysis (TGA). In vitro release was conducted for three months and dexamethasone was confirmed in the released samples using liquid chromatography-tandem mass spectrometry (LC/MS/MS). A pilot ocular safety and determination of vitreous drug level was performed in rabbit eyes. The drug loading study demonstrated that loading efficiency was from 5.96% to 10.77% depending on the loading reaction time, being higher with longer loading reaction time before reaching saturation around 7 days. In vitro drug release study revealed that dexamethasone release from pSiO2 particles was sustainable for over 90 days and was 80 days longer than free dexamethasone or infiltration-loaded pSiO2 particle formulation in the same setting. Pilot in vivo study demonstrated no sign of ocular adverse reaction in rabbit eyes following a single 3 mg intravitreal injection and

  18. Direct block of inward rectifier potassium channels by nicotine.

    PubMed

    Wang, H; Yang, B; Zhang, L; Xu, D; Wang, Z

    2000-04-01

    Nicotine has been shown to depolarize membrane potential and to lengthen action potential duration in isolated cardiac preparations. To investigate whether this is a consequence of direct interaction of nicotine with inward rectifier K(+) channels which are a key determinant of membrane potentials, we assessed the effects of nicotine on two cloned human inward rectifier K(+) channels, Kir2.1 and Kir2.2, expressed in Xenopus oocytes and the native inward rectifier K(+) current I(K1) in canine ventricular myocytes. Nicotine suppressed Kir2.1-expressed currents at varying potentials negative to -20 mV, with more pronounced effects on the outward current between -70 and -20 mV relative to the inward current at hyperpolarized potentials (below -70 mV). The inhibition was concentration dependent. For the outward currents recorded at -50 mV, the IC50 was 165 +/- 18 microM. Similar effects of nicotine were observed for Kir2.2. A more potent effect was seen with I(K1) in canine myocytes. Significant blockade ( approximately 60%) was found at a concentration as low as 0.5 microM and the IC50 was 4.0 +/- 0.4 microM. The effects in both oocytes and myocytes were partially reversible upon washout of nicotine. Antagonists of nicotinic receptors (mecamylamine, 100 microM), muscarinic receptors (atropine, 1 microM), and beta-adrenergic receptors (propranolol, 1 microM) all failed to restore the depressed currents, suggesting that nicotine acted directly on Kir channels, independent of catecholamine release. This property of nicotine may explain its membrane-depolarizing and action potential duration-prolonging effects in cardiac cells and may contribute in part to its ability to promote propensity for cardiac arrhythmias.

  19. Evaluation of the SCR controller noise problem

    SciTech Connect

    Bassett, R R; Barnaby, B E

    1981-12-01

    Several types of solid state controllers are available for application to electric vehicles. The silicon controlled rectifier (SCR) type provides a current waveform of fixed pulse height and variable ratio on to off time. The controller provides step-free operation through a four-speed manual transmission. However, because the current is chopped, the circuits produce loud hums of varying frequency, which in some mounting situations may be amplified. This noise disappoints those who expect an electric vehicle to boast relatively silent operation. To evaluate the problem, components of a test bed, consisting of a battery bank, dc motor, SCR controller, charger, and appropriate cabling, were fitted with accelerometers, and the noises were evaluated for amplitude and spectral characteristics. Transient currents and voltages were also measured and analyzed to identify the source of the noise and the frequencies involved.

  20. Rectified momentum transport for a kicked Bose-Einstein condensate.

    PubMed

    Sadgrove, Mark; Horikoshi, Munekazu; Sekimura, Tetsuo; Nakagawa, Ken'ichi

    2007-07-27

    We report the experimental observation of rectified momentum transport for a Bose-Einstein condensate kicked at the Talbot time (quantum resonance) by an optical standing wave. Atoms are initially prepared in a superposition of the 0 and -2hkl momentum states using an optical pi/2 pulse. By changing the relative phase of the superposed states, a momentum current in either direction along the standing wave may be produced. We offer an interpretation based on matter-wave interference, showing that the observed effect is uniquely quantum.

  1. Reduction of burn scar formation by halofuginone-eluting silicone gel sheets: a controlled study on nude mice.

    PubMed

    Zeplin, Philip H

    2012-03-01

    Burn scar formations can cause disfiguration and loss of dermal function. The purpose of this study was to examine whether application of modified silicone gel sheets with an antifibrotic drug halofuginone-eluting hybrid surface produce an effect on scar development. There were a total of 2 animal groups. The athymic nude mice (nu/nu) of both groups underwent transplantation of full-thickness human skin grafts onto their backs and setting of partial thickness burn injury. The status of local scar development was observed over a period of 3 months after the application of silicone gel sheets and also after application of surface-modified halofuginone-eluting silicone gel sheets. Subsequently, via real-time polymerase chain reaction, the cDNA levels from key mediators of scar formation (transforming growth factor beta, COL1A1, connective tissue growth factor, fibroblast growth factor 2, matrix metalloproteinase 2, matrix metalloproteinase 9) were established and statistically evaluated. In comparison with uncoated silicone gel sheets, the application of halofuginone-eluting silicone gel sheets lead to a significant difference in gene expression activity in scar tissue. Halofuginone-eluting hybrid surface silicone gel sheets significantly increase the antiscarring effect of adhesive silicone gel sheets by deceleration and downregulation of scar development by normalization of the expression activity.

  2. Control of Crystal Orientation and Diameter of Silicon Nanowire Using Anodic Aluminum Oxide Template

    NASA Astrophysics Data System (ADS)

    Shimizu, Tomohiro; Inoue, Fumihiro; Wang, Chonge; Otsuka, Shintaro; Tada, Yoshihiro; Koto, Makoto; Shingubara, Shoso

    2013-06-01

    The control of the crystal orientation and diameter of vertically grown epitaxial Si nanowires was demonstrated using a combination of a vapor-liquid-solid (VLS) growth technique and the use of an anodic aluminum oxide (AAO) template on a single-crystal Si substrate. The [100], [110], and [111] nanowires were selectively obtained by choosing the Si substrate with appropriate crystal orientation. The diameter of a Si nanowire in the AAO template could be controlled by the modification of the pore size of the AAO template with anodic voltage during anodization.

  3. Controlled aluminum-induced crystallization of an amorphous silicon thin film by using an oxide-layer diffusion barrier

    NASA Astrophysics Data System (ADS)

    Hwang, Ji-Hyun; Kwak, Hyunmin; Kwon, Myeung Hoi

    2014-03-01

    Aluminum-induced crystallization (AIC) of amorphous silicon with an Al2O3 diffusion barrier was investigated for controlling Si crystallization and preventing layer exchange during the annealing process. An Al2O3 layer was deposited between the a-Si and the Al films (a-Si/Al2O3/Al/Glass) and was blasted with an air spray gun with alumina beads to form diffusion channels between the Si and the Al layers. During the annealing process, small grain Si x Al seeds were formed at the channels. Then, the Al2O3 diffusion barrier was restructured to close the channels and prevent further diffusion of Al atoms into the a-Si layer. A polycrystalline Si film with (111), (220) and (311) crystallization peaks in the X-ray diffraction pattern was formed by annealing at 560 °C in a conventional furnace. That film showed a p-type semiconducting behavior with good crystallinity and a large grain size of up to 14.8 µm. No layer conversion occurred between the Si and the Al layers, which had been the fundamental obstacle to the applications in the crystallization of a-Si films by using the AIC method.

  4. Control of heat transfer in continuous-feeding Czochralski-silicon crystal growth with a water-cooled jacket

    NASA Astrophysics Data System (ADS)

    Zhao, Wenhan; Liu, Lijun

    2017-01-01

    The continuous-feeding Czochralski method is an effective method to reduce the cost of single crystal silicon. By promoting the crystal growth rate, the cost can be reduced further. However, more latent heat will be released at the melt-crystal interface under a high crystal growth rate. In this study, a water-cooled jacket was applied to enhance the heat transfer at the melt-crystal interface. Quasi-steady-state numerical calculation was employed to investigate the impact of the water-cooled jacket on the heat transfer at the melt-crystal interface. Latent heat released during the crystal growth process at the melt-crystal interface and absorbed during feedstock melting at the feeding zone was modeled in the simulations. The results show that, by using the water-cooled jacket, heat transfer in the growing crystal is enhanced significantly. Melt-crystal interface deflection and thermal stress increase simultaneously due to the increase of radial temperature at the melt-crystal interface. With a modified heat shield design, heat transfer at the melt-crystal interface is well controlled. The crystal growth rate can be increased by 20%.

  5. Low temperature synthesis of silicon quantum dots with plasma chemistry control in dual frequency non-thermal plasmas.

    PubMed

    Sahu, Bibhuti Bhusan; Yin, Yongyi; Han, Jeon Geon; Shiratani, Masaharu

    2016-06-21

    The advanced materials process by non-thermal plasmas with a high plasma density allows the synthesis of small-to-big sized Si quantum dots by combining low-temperature deposition with superior crystalline quality in the background of an amorphous hydrogenated silicon nitride matrix. Here, we make quantum dot thin films in a reactive mixture of ammonia/silane/hydrogen utilizing dual-frequency capacitively coupled plasmas with high atomic hydrogen and nitrogen radical densities. Systematic data analysis using different film and plasma characterization tools reveals that the quantum dots with different sizes exhibit size dependent film properties, which are sensitively dependent on plasma characteristics. These films exhibit intense photoluminescence in the visible range with violet to orange colors and with narrow to broad widths (∼0.3-0.9 eV). The observed luminescence behavior can come from the quantum confinement effect, quasi-direct band-to-band recombination, and variation of atomic hydrogen and nitrogen radicals in the film growth network. The high luminescence yields in the visible range of the spectrum and size-tunable low-temperature synthesis with plasma and radical control make these quantum dot films good candidates for light emitting applications.

  6. DNA Physical Mapping via the Controlled Translocation of Single Molecules through a 5-10nm Silicon Nitride Nanopore

    NASA Astrophysics Data System (ADS)

    Stein, Derek; Reisner, Walter; Jiang, Zhijun; Hagerty, Nick; Wood, Charles; Chan, Jason

    2009-03-01

    The ability to map the binding position of sequence-specific markers, including transcription-factors, protein-nucleic acids (PNAs) or deactivated restriction enzymes, along a single DNA molecule in a nanofluidic device would be of key importance for the life-sciences. Such markers could give an indication of the active genes at particular stage in a cell's transcriptional cycle, pinpoint the location of mutations or even provide a DNA barcode that could aid in genomics applications. We have developed a setup consisting of a 5-10 nm nanopore in a 20nm thick silicon nitride film coupled to an optical tweezer setup. The translocation of DNA across the nanopore can be detected via blockades in the electrical current through the pore. By anchoring one end of the translocating DNA to an optically trapped microsphere, we hope to stretch out the molecule in the nanopore and control the translocation speed, enabling us to slowly scan across the genome and detect changes in the baseline current due to the presence of bound markers.

  7. D0 Silicon Upgrade: Cryolab Control Valve Modification Information for D0-EVMF-H

    SciTech Connect

    Rucincki, Russ; /Fermilab

    1995-10-26

    This engineering note documents some information regarding the solenoid magnet flow valve, EVMF. See also EN-437 'Control Dewar valve sizing' also for further information on this valve. This note documents the modification done to the valve to change it to a Cv = 0.32.

  8. High-performance polycrystalline silicon thin-film transistors with two-dimensional location control of the grain boundary via excimer laser crystallization.

    PubMed

    Wang, Chao-Lung; Lee, I-Che; Wu, Chun-Yu; Liao, Chan-Yu; Cheng, Yu-Ting; Cheng, Huang-Chung

    2012-07-01

    High-performance low-temperature polycrystalline silicon (Poly-Si) thin-film transistors (TFTs) have been fabricated with two-dimensional (2-D) location-controlled grain boundaries using excimer laser crystallization (ELC). By locally increased thickness of the amorphous silicon (a-Si) film that was served as the seed crystals with a partial-melting crystallization scheme, the cross-shaped grain boundary structures were produced between the thicker a-Si grids. The Poly-Si TFTs with one parallel and one perpendicular grain boundary along the channel direction could therefore be fabricated to reach excellent field-effect mobility of 530 cm2/V-s while the conventional ones exhibited field-effect mobility of 198 cm2/V-s. Furthermore, the proposed TFTs achieved not only superior electric properties but also improved uniformity as compared with the conventional ones owing to the artificially controlled locations of grain boundaries.

  9. An 18.2%-efficient black-silicon solar cell achieved through control of carrier recombination in nanostructures.

    PubMed

    Oh, Jihun; Yuan, Hao-Chih; Branz, Howard M

    2012-11-01

    Silicon nanowire and nanopore arrays promise to reduce manufacturing costs and increase the power conversion efficiency of photovoltaic devices. So far, however, photovoltaic cells based on nanostructured silicon exhibit lower power conversion efficiencies than conventional cells due to the enhanced photocarrier recombination associated with the nanostructures. Here, we identify and separately measure surface recombination and Auger recombination in wafer-based nanostructured silicon solar cells. By identifying the regimes of junction doping concentration in which each mechanism dominates, we were able to design and fabricate an independently confirmed 18.2%-efficient nanostructured 'black-silicon' cell that does not need the antireflection coating layer(s) normally required to reach a comparable performance level. Our results suggest design rules for efficient high-surface-area solar cells with nano- and microstructured semiconductor absorbers.

  10. Rectifying social inequalities in a resource allocation task.

    PubMed

    Elenbaas, Laura; Rizzo, Michael T; Cooley, Shelby; Killen, Melanie

    2016-10-01

    To investigate whether children rectify social inequalities in a resource allocation task, participants (N=185 African-American and European-American 5-6year-olds and 10-11year-olds) witnessed an inequality of school supplies between peers of different racial backgrounds. Assessments were conducted on how children judged the wrongfulness of the inequality, allocated new resources to racial ingroup and outgroup recipients, evaluated alternative allocation strategies, and reasoned about their decisions. Younger children showed ingroup favorability; their responses differed depending on whether they had witnessed their ingroup or an outgroup at a disadvantage. With age, children increasingly reasoned about the importance of equal access to school supplies and correcting past disparities. Older children judged the resource inequality negatively, allocated more resources to the disadvantaged group, and positively evaluated the actions of others who did the same, regardless of whether they had seen their racial ingroup or an outgroup at a disadvantage. Thus, balancing moral and social group concerns enabled individuals to rectify inequalities and ensure fair access to important resources regardless of racial group membership.

  11. Wafer-scale fabrication of silicon nanowire arrays with controllable dimensions

    NASA Astrophysics Data System (ADS)

    Wang, Wei; Li, Dan; Tian, Miao; Lee, Yung-Cheng; Yang, Ronggui

    2012-09-01

    A novel and facile method was successfully developed to fabricate wafer-scale Si nanowire arrays with well-controlled sizes through the in-situ porous anodic alumina (PAA) template-assisted wet-etching process. The diameter and filling ratio (inter-wire spacing) of the as-prepared Si nanowires are determined by the size and density of pores in the in-situ PAA templates, which can be tailored independently by adjusting the anodization voltages and the immersion time of PAA templates in phosphoric acid. The length of Si nanowires can be more than one hundred micrometers long, which is controlled by adjusting the wet-etching time. Moreover, this method is compatible with complex Si surface topology for creating desirable 3-dimensional hybrid micro/nano-structures. Such Si nanowire arrays exhibit ultralow reflectance and interesting wettability that are of great importance to photovoltaics and thermal management applications.

  12. Manufacturing Methods and Technology Measure for Fabrication of Silicon Transcalent Rectifier.

    DTIC Science & Technology

    1980-09-01

    reducing gaseous tungsten hexafluoride with hydrogen gas at high temperature in a partial vacuum pressure. The deposition time is several minutes with the...Palladium Evaporation 13 4. CVD Tungsten Metallizing 13 5. Nickel Electroplating 13 6. Contouring to Produce the Chip 15 7. Solder Dipping 15 " 8...Physical Insepction 28 B. Confirmatory Phase 30 . 1. Ion Implantation 30 2. Webless Wicked 31 3. Tungsten Button - Convoluted 31 4. Tungsten Button - Non

  13. Manufacturing Methods and Technology Measure for Fabrication of Silicon Transcalent Rectifier.

    DTIC Science & Technology

    1979-10-01

    Inspection 15 B. Group B Inspection 24 C. Group C Inspection 26 D. General Data 36 V. TEST EQUIPMENT 36 A. Surge Current Test Set 43 B. Forward On...Dimension C 41 23 Statistical Distribution of Dimension D 42 24 Statistical Distribution of Dimension F 42 7 Figure Page No. Title No. 25 Repetitive Surge...production of the device. Although this report covers the confirmatory phase of the program, the 24 months duration program will establish the production

  14. Inward rectifier potassium currents in mammalian skeletal muscle fibres

    PubMed Central

    DiFranco, Marino; Yu, Carl; Quiñonez, Marbella; Vergara, Julio L

    2015-01-01

    Inward rectifying potassium (Kir) channels play a central role in maintaining the resting membrane potential of skeletal muscle fibres. Nevertheless their role has been poorly studied in mammalian muscles. Immunohistochemical and transgenic expression were used to assess the molecular identity and subcellular localization of Kir channel isoforms. We found that Kir2.1 and Kir2.2 channels were targeted to both the surface andthe transverse tubular system membrane (TTS) compartments and that both isoforms can be overexpressed up to 3-fold 2 weeks after transfection. Inward rectifying currents (IKir) had the canonical features of quasi-instantaneous activation, strong inward rectification, depended on the external [K+], and could be blocked by Ba2+ or Rb+. In addition, IKir records show notable decays during large 100 ms hyperpolarizing pulses. Most of these properties were recapitulated by model simulations of the electrical properties of the muscle fibre as long as Kir channels were assumed to be present in the TTS. The model also simultaneously predicted the characteristics of membrane potential changes of the TTS, as reported optically by a fluorescent potentiometric dye. The activation of IKir by large hyperpolarizations resulted in significant attenuation of the optical signals with respect to the expectation for equal magnitude depolarizations; blocking IKir with Ba2+ (or Rb+) eliminated this attenuation. The experimental data, including the kinetic properties of IKir and TTS voltage records, and the voltage dependence of peak IKir, while measured at widely dissimilar bulk [K+] (96 and 24 mm), were closely predicted by assuming Kir permeability (PKir) values of ∼5.5 × 10−6 cm s−1 and equal distribution of Kir channels at the surface and TTS membranes. The decay of IKir records and the simultaneous increase in TTS voltage changes were mostly explained by K+ depletion from the TTS lumen. Most importantly, aside from allowing an accurate estimation of

  15. Commissioning of the control and data acquisition electronics for the CDF Silicon Vertex Detector

    SciTech Connect

    Tkaczyk, S.M.; Turner, K.J.; Nelson, C.A.; Shaw, T.M.; Wesson, T.R.; Bailey, M.W.; Kruse, M.C.; Castro, A.

    1991-11-01

    The SVX data acquisition system includes three components: a Fastbus Sequencer, an SVX Rabbit Crate Controller and a Digitizer. These modules are integrated into the CDF DAQ system and operate the readout chips. The results of the extensive functional tests of the SVX modules are reported. We discuss the stability of the Sequencers, systematic differences between them and methods of synchronization with the Tevatron beam crossings. The Digitizer ADC calibration procedure run on the microsequencer is described. The microsequencer code used for data taking and SVX chip calibration modes is described. Measurements of the SVX data scan time are discussed.

  16. Control of recrystallization during high-temperature hot-rolling of grain-oriented silicon steel

    SciTech Connect

    Muraki, M.; Obara, T.; Satoh, M.; Kan, T.

    1995-08-01

    Recrystallization kinetics of 3% Si steel after hot rolling in the temperatures between 1,373 and 1,573 K, which is quite important to obtain uniform magnetic properties, was studied. Recrystallization rate after hot rolling was relatively slow because of low dislocation density, which resulted from rapid recovery, and its behavior was strongly influenced by the initial grain size and coexistence of the {gamma} phase. Based on these findings, controlling technology of recrystallization during hot rolling of grain-oriented Si steels is discussed.

  17. A Novel Solid-State Thermal Rectifier Based On Reduced Graphene Oxide

    PubMed Central

    Tian, He; Xie, Dan; Yang, Yi; Ren, Tian-Ling; Zhang, Gang; Wang, Yu-Feng; Zhou, Chang-Jian; Peng, Ping-Gang; Wang, Li-Gang; Liu, Li-Tian

    2012-01-01

    Recently, manipulating heat transport by phononic devices has received significant attention, in which phonon – a heat pulse through lattice, is used to carry energy. In addition to heat control, the thermal devices might also have broad applications in the renewable energy engineering, such as thermoelectric energy harvesting. Elementary phononic devices such as diode, transistor and logic devices have been theoretically proposed. In this work, we experimentally create a macroscopic scale thermal rectifier based on reduced graphene oxide. Obvious thermal rectification ratio up to 1.21 under 12 K temperature bias has been observed. Moreover, this ratio can be enhanced further by increasing the asymmetric ratio. Collectively, our results raise the exciting prospect that the realization of macroscopic phononic device with large-area graphene based materials is technologically feasible, which may open up important applications in thermal circuits and thermal management. PMID:22826801

  18. A novel solid-state thermal rectifier based on reduced graphene oxide.

    PubMed

    Tian, He; Xie, Dan; Yang, Yi; Ren, Tian-Ling; Zhang, Gang; Wang, Yu-Feng; Zhou, Chang-Jian; Peng, Ping-Gang; Wang, Li-Gang; Liu, Li-Tian

    2012-01-01

    Recently, manipulating heat transport by phononic devices has received significant attention, in which phonon--a heat pulse through lattice, is used to carry energy. In addition to heat control, the thermal devices might also have broad applications in the renewable energy engineering, such as thermoelectric energy harvesting. Elementary phononic devices such as diode, transistor and logic devices have been theoretically proposed. In this work, we experimentally create a macroscopic scale thermal rectifier based on reduced graphene oxide. Obvious thermal rectification ratio up to 1.21 under 12 K temperature bias has been observed. Moreover, this ratio can be enhanced further by increasing the asymmetric ratio. Collectively, our results raise the exciting prospect that the realization of macroscopic phononic device with large-area graphene based materials is technologically feasible, which may open up important applications in thermal circuits and thermal management.

  19. Emerging concepts for G protein-gated inwardly rectifying potassium (GIRK) channels in health and disease

    PubMed Central

    Lüscher, Christian; Slesinger, Paul A.

    2010-01-01

    G protein-gated inwardly rectifying potassium (GIRK) channels hyperpolarize neurons in response to the activation of many G-protein coupled receptors and thus control the excitability of neurons through GIRK-mediated self-inhibition, slow synaptic potentials and volume transmission. GIRK channel function and trafficking are highly dependent on their subunit composition. Pharmacological investigations of GIRK channels and studies in animal models suggest that GIRK activity has an important role in physiological responses, including pain perception and memory modulation. Moreover, abnormal GIRK function has been implicated in altering neuronal excitability and cell death that may be important in the pathophysiology of human diseases such as epilepsy, Down’s syndrome, Parkinson’s disease and drug addiction. GIRK channels may therefore prove to be a valuable new therapeutic target for treating these health problems. PMID:20389305

  20. Antidromic-rectifying gap junctions amplify chemical transmission at functionally mixed electrical-chemical synapses.

    PubMed

    Liu, Ping; Chen, Bojun; Mailler, Roger; Wang, Zhao-Wen

    2017-03-20

    Neurons communicate through chemical synapses and electrical synapses (gap junctions). Although these two types of synapses often coexist between neurons, little is known about whether they interact, and whether any interactions between them are important to controlling synaptic strength and circuit functions. By studying chemical and electrical synapses between premotor interneurons (AVA) and downstream motor neurons (A-MNs) in the Caenorhabditis elegans escape circuit, we found that disrupting either the chemical or electrical synapses causes defective escape response. Gap junctions between AVA and A-MNs only allow antidromic current, but, curiously, disrupting them inhibits chemical transmission. In contrast, disrupting chemical synapses has no effect on the electrical coupling. These results demonstrate that gap junctions may serve as an amplifier of chemical transmission between neurons with both electrical and chemical synapses. The use of antidromic-rectifying gap junctions to amplify chemical transmission is potentially a conserved mechanism in circuit functions.

  1. Antidromic-rectifying gap junctions amplify chemical transmission at functionally mixed electrical-chemical synapses

    PubMed Central

    Liu, Ping; Chen, Bojun; Mailler, Roger; Wang, Zhao-Wen

    2017-01-01

    Neurons communicate through chemical synapses and electrical synapses (gap junctions). Although these two types of synapses often coexist between neurons, little is known about whether they interact, and whether any interactions between them are important to controlling synaptic strength and circuit functions. By studying chemical and electrical synapses between premotor interneurons (AVA) and downstream motor neurons (A-MNs) in the Caenorhabditis elegans escape circuit, we found that disrupting either the chemical or electrical synapses causes defective escape response. Gap junctions between AVA and A-MNs only allow antidromic current, but, curiously, disrupting them inhibits chemical transmission. In contrast, disrupting chemical synapses has no effect on the electrical coupling. These results demonstrate that gap junctions may serve as an amplifier of chemical transmission between neurons with both electrical and chemical synapses. The use of antidromic-rectifying gap junctions to amplify chemical transmission is potentially a conserved mechanism in circuit functions. PMID:28317880

  2. Rectifying filamentary resistive switching in ion-exfoliated LiNbO3 thin films

    NASA Astrophysics Data System (ADS)

    Pan, Xinqiang; Shuai, Yao; Wu, Chuangui; Luo, Wenbo; Sun, Xiangyu; Zeng, Huizhong; Zhou, Shengqiang; Böttger, Roman; Ou, Xin; Mikolajick, Thomas; Zhang, Wanli; Schmidt, Heidemarie

    2016-01-01

    In this letter, we report the resistive switching properties of ion-exfoliated LiNbO3 thin films. After annealing in Ar or in vacuum, electro-forming has been observed on the thin films, and the oxygen gas bubbles can be eliminated by tuning the annealing conditions in order to prevent the destruction of top electrodes. The thin films show rectifying filamentary resistive switching after forming, which is interpreted by a simplified model that the local filament does not penetrate throughout the LiNbO3 thin film, resulting in asymmetric contact barriers at the two interfaces. The well controlled electro-forming step and the highly reproducible switching properties are attributed to the more homogeneous distribution of defects in single crystalline materials and the specific geometry of filament.

  3. Orientation- and position-controlled alignment of asymmetric silicon microrod on a substrate with asymmetric electrodes

    NASA Astrophysics Data System (ADS)

    Shibata, Akihide; Watanabe, Keiji; Sato, Takuya; Kotaki, Hiroshi; Schuele, Paul J.; Crowder, Mark A.; Zhan, Changqing; Hartzell, John W.; Nakatani, Ryoichi

    2014-03-01

    In this paper, we demonstrate the orientation-controlled alignment of asymmetric Si microrods on a glass substrate with an asymmetric pair of electrodes. The Si microrods have the shape of a paddle with a blade and a shaft part, and the pair of electrodes consists of a narrow electrode and a wide electrode. By applying AC bias to the electrodes, the Si microrods suspended in a fluid align in such a way to settle across the electrode pair, and over 80% of the aligned Si microrods have an orientation with the blade and the shaft of the paddle on the wide and the narrow electrodes, respectively. When Si microrods have a shell of dielectric film and its thickness on the top face is thicker than that on the bottom face, 97.8% of the Si microrods are aligned with the top face facing upwards. This technique is useful for orientation-controlled alignment of nano- and microsized devices that have polarity or a distinction between the top and bottom faces.

  4. D0 Silicon Upgrade: Control Dewar Steady State Thermodynamic Operating Goals

    SciTech Connect

    Rucincki, Russ; /Fermilab

    1995-10-20

    This engineering note documents the thermodynamic operating parameter goals for the steady state operation of the control dewar/solenoid system. Specifically, how the control dewar pressure control valve, PV-3062-H and the magnet flow control valve EVMF are operated to give the lowest possible temperature fluid at the solenoid magnet. The goals are: (1) For PV-3062-H - The process variable is the helium reservoir pressure, minimize the reservoir pressure, provide only enough pressure plus a little margin to ensure leads flow; and (2) For EVMF - The process variable is firstly a manual setpoint of flowrate as read by the flow venturi, FE3253-H, and secondly the reservoir liquid level, minimize the pressure drop thru the solenoid cooling tubes, provide at least enough flow to maintain reservoir level and stable operation of the magnet. The thermodynamic states for the fluid thru the system are shown on the Pressure versus Temperature graph. Lines of constant enthalpy are also shown. State A is shown as two phase liquid entering the inlet of the subcooler. The subcooler subcools the fluid to State B. State B to State C is caused by the pressure drop across EVMF. State C to D is the estimated pressure drop from the outlet of EVMF thru the solenoid cooling tubes and back up to the helium reservoir inlet. To give the coolest fluid in the cooling tubes, the two phase fluid in the reservoir should be at the lowest pressure (and thus temperature). This lowest pressure is limited by the required pressure for leads flow and if this does not dominate, the low pressure side pressure drop thru the refrigerator and suction pressure set point. My guess is the lead flow requirement will dominate. I suggest putting the PV-3062-H set point such that the lead flow control valves operate at about 80% open. The second parameter that will give the coolest fluid in the cooling tubes is a minimized pressure drop thru the cooling tubes. This can be accomplished by providing a minimized

  5. Control of Chitin Nanofiber Production by the Lipid-Producing Diatom Cyclotella sp. through Fed-Batch Addition of Dissolved Silicon and Nitrate in a Bubble-Column Photobioreactor.

    PubMed

    Chiriboga, Omar; Rorrer, Gregory L

    2017-02-11

    Diatoms are single-celled algae that make cell walls of nanopatterned biogenic silica called frustules through metabolic uptake of dissolved silicon and its templated condensation into biosilica. The centric marine diatom Cyclotella sp. also produces intracellular lipids and the valued co-product chitin, an N-acetyl glucosamine biopolymer that is extruded from selected frustule pores as pure nanofibers. The goal of this study was to develop a nutrient feeding strategy to control the production of chitin nanofibers from Cyclotella with the co-production of biofuel lipids. A two-stage phototrophic cultivation process was developed where Stage I set the cell suspension to a silicon-starved state under batch operation, and Stage II continuously added silicon and nitrate to the silicon-starved cells to enable one more cell doubling to 4 ⋅ 10(6) cells/mL. The silicon delivery rate was set to enable a silicon-limited cell division rate under cumulative delivery of 0.8 mM Si and 1.2 mM nitrate (1.5:1 mol N/mol Si) over a 4-14 day addition period. In Stage II, both cell number and chitin production were linear with time. Cell number and the specific chitin production rate increased linearly with increasing silicon delivery rate to achieve cumulative product yields of 12 ± 1 mg chitin/10(9) cells and 33 ± 3 mg lipid/10(9) cells. Therefore, chitin production is controlled through cell division, which is externally controlled through silicon delivery. Lipid production was not linearly correlated to silicon delivery and occurred primarily during Stage I, just after the complete co-consumption of both dissolved silicon and nitrate. This article is protected by copyright. All rights reserved.

  6. Silicon Control of Strontium and Cesium Partitioning in Hydroxide-Weathered Sediments

    SciTech Connect

    Chorover, Jon; Choi, Sunkyung; Rotenberg, P.; Serne, R. Jeffrey; Rivera, Nelson; Strepka, Caleb R.; Thompson, Aaron; Mueller, Karl T.; O'Day, Peggy A.

    2008-04-15

    Cation partitioning in an aqueous soil suspension depends on the coupling of reaction time, sorbate amount and mineral weathering reactions. These factors were varied in sediment suspension experiments to identify geochemical processes that affect migration of Sr2+ and Cs+ introduced to the subsurface by caustic high level radioactive waste (HLRW). Three glacio-fluvial and lacustrine sediments from the Hanford Site were subjected to hyperalkaline (pH > 13), Na–Al–NO3–OH solution conditions within a gradient field of (i) sorptive concentration (10-5–10-3 M) and (ii) reaction time (0–365 d). Strontium uptake (qSr) exceeded that of cesium at nearly all reaction times. Sorbent affinity for both Cs+ and Sr2+ increased with clay plus silt content at early times, but a prolonged slow uptake process was observed over the course of sediment weathering that erased the texture effect for Sr2+; all sediments showed similar mass normalized uptake after several months of reaction time. Strontium became progressively recalcitrant to desorption after 92 d, with accumulation and aging of neoformed aluminosilicates. Formation of Cs+ and Sr2+-containing cancrinite and sodalite was observed after 183 d by SEM and synchrotron u-XRF and u-XRD. EXAFS data showed ncorporation of Sr2+ into both feldspathoid and SrCO3(s) coordination environments after one year. Adsorption was predominant at early times and low sorbate amount, whereas recipitation, controlled largely by sediment Si release, became increasingly important at longer times and higher sorbate amount. Kinetics of contaminant desorption at pH 8 from one year-weathered sediments showed significant dependence on background cation (Ca2+ versus K+) composition. Results of this study indicate that co-precipitation and ion exchange in neoformed aluminosilicates may be an important mechanism controlling Sr2+ and Cs+ mobility in siliceous sediments impacted by hyperalkaline HLRW.

  7. Silicon control of strontium and cesium partitioning in hydroxide-weathered sediments

    NASA Astrophysics Data System (ADS)

    Chorover, Jon; Choi, Sunkyung; Rotenberg, Paula; Serne, R. Jeff; Rivera, Nelson; Strepka, Caleb; Thompson, Aaron; Mueller, Karl T.; O'Day, Peggy A.

    2008-04-01

    Cation partitioning and speciation in an aqueous soil suspension may depend on the coupling of reaction time, sorbate amount and mineral weathering reactions. These factors were varied in sediment suspension experiments to identify geochemical processes that affect migration of Sr 2+ and Cs + introduced to the subsurface by caustic high level radioactive waste (HLRW). Three glacio-fluvial and lacustrine sediments from the Hanford Site (WA, USA) were subjected to hyperalkaline (pH > 13), Na-Al-NO 3-OH solution conditions within a gradient field of (i) sorptive concentration (10 -5-10 -3 m) and (ii) reaction time (0-365 d). Strontium uptake ( qSr) exceeded that of cesium at nearly all reaction times. Sorbent affinity for both Cs + and Sr 2+ increased with clay plus silt content at early times, but a prolonged slow uptake process was observed over the course of sediment weathering that erased the texture effect for Sr 2+; all sediments showed similar mass normalized uptake after several months of reaction time. Strontium became progressively recalcitrant to desorption after 92 d, with accumulation and aging of neoformed aluminosilicates. Formation of Cs + and Sr 2+-containing cancrinite and sodalite was observed after 183 d by SEM and synchrotron μ-XRF and μ-XRD. EXAFS data for qSr ≈ 40 mmol kg -1 showed incorporation of Sr 2+ into both feldspathoid and SrCO 3(s) coordination environments after one year. Adsorption was predominant at early times and low sorbate amount, whereas precipitation, controlled largely by sediment Si release, became increasingly important at longer times and higher sorbate amount. Kinetics of contaminant desorption at pH 8 from one year-weathered sediments showed significant dependence on background cation (Ca 2+ versus K +) composition. Results of this study indicate that co-precipitation and ion exchange in neoformed aluminosilicates may be an important mechanism controlling Sr 2+ and Cs + mobility in siliceous sediments impacted by

  8. Iodine 125 Brachytherapy With Vitrectomy and Silicone Oil in the Treatment of Uveal Melanoma: 1-to-1 Matched Case-Control Series

    SciTech Connect

    McCannel, Tara A. McCannel, Colin A.

    2014-06-01

    Purpose: We initially reported the radiation-attenuating effect of silicone oil 1000 centistokes for iodine 125. The purpose of this report was to compare the clinical outcomes in case patients who had iodine 125 brachytherapy with vitrectomy and silicone oil 1000 centistokes with the outcomes in matched control patients who underwent brachytherapy alone. Methods and Materials: Consecutive patients with uveal melanoma who were treated with iodine 125 plaque brachytherapy and vitrectomy with silicone oil with minimum 1-year follow-up were included. Control patients who underwent brachytherapy alone were matched for tumor size, location, and sex. Baseline patient and tumor characteristics and tumor response to radiation, final visual acuity, macular status, central macular thickness by ocular coherence tomography (OCT), cataract progression, and metastasis at last follow-up visit were compared. Surgical complications were also determined. Results: Twenty case patients met the inclusion criteria. The average follow-up time was 22.1 months in case patients and 19.4 months in control patients. The final logMAR vision was 0.81 in case patients and 1.1 in control patients (P=.071); 8 case patients and 16 control patients had abnormal macular findings (P=.011); and the average central macular thickness by OCT was 293.2 μm in case patients and 408.5 μm in control patients (P=.016). Eleven case patients (55%) and 1 control patient (5%) had required cataract surgery at last follow-up (P=.002). Four patients in the case group and 1 patient in the control group experienced metastasis (P=.18). Among the cases, intraoperative retinal tear occurred in 3 patients; total serous retinal detachment and macular hole developed in 1 case patient each. There was no case of rhegmatogenous retinal detachment, treatment failure, or local tumor dissemination in case patients or control patients. Conclusions: With up to 3 years of clinical follow-up, silicone oil during brachytherapy

  9. Composition Comprising Silicon Carbide

    NASA Technical Reports Server (NTRS)

    Mehregany, Mehran (Inventor); Zorman, Christian A. (Inventor); Fu, Xiao-An (Inventor); Dunning, Jeremy L. (Inventor)

    2012-01-01

    A method of depositing a ceramic film, particularly a silicon carbide film, on a substrate is disclosed in which the residual stress, residual stress gradient, and resistivity are controlled. Also disclosed are substrates having a deposited film with these controlled properties and devices, particularly MEMS and NEMS devices, having substrates with films having these properties.

  10. A Vertical Diffusion Scheme to estimate the atmospheric rectifier effect

    NASA Astrophysics Data System (ADS)

    Chen, Baozhang; Chen, Jing M.; Liu, Jane; Chan, Douglas; Higuchi, Kaz; Shashkov, Alexander

    2004-02-01

    The magnitude and spatial distribution of the carbon sink in the extratropical Northern Hemisphere remain uncertain in spite of much progress made in recent decades. Vertical CO2 diffusion in the planetary boundary layer (PBL) is an integral part of atmospheric CO2 transport and is important in understanding the global CO2 distribution pattern, in particular, the rectifier effect on the distribution [Keeling et al., 1989; Denning et al., 1995]. Attempts to constrain carbon fluxes using surface measurements and inversion models are limited by large uncertainties in this effect governed by different processes. In this study, we developed a Vertical Diffusion Scheme (VDS) to investigate the vertical CO2 transport in the PBL and to evaluate CO2 vertical rectification. The VDS was driven by the net ecosystem carbon flux and the surface sensible heat flux, simulated using the Boreal Ecosystem Productivity Simulator (BEPS) and a land surface scheme. The VDS model was validated against half-hourly CO2 concentration measurements at 20 m and 40 m heights above a boreal forest, at Fraserdale (49°52'29.9''N, 81°34'12.3''W), Ontario, Canada. The amplitude and phase of the diurnal/seasonal cycles of simulated CO2 concentration during the growing season agreed closely with the measurements (linear correlation coefficient (R) equals 0.81). Simulated vertical and temporal distribution patterns of CO2 concentration were comparable to those measured at the North Carolina tower. The rectifier effect, in terms of an annual-mean vertical gradient of CO2 concentration in the atmosphere that decreases from the surface to the top of PBL, was found at Fraserdale to be about 3.56 ppmv. Positive covariance between the seasonal cycles of plant growth and PBL vertical diffusion was responsible for about 75% of the effect, and the rest was caused by covariance between their diurnal cycles. The rectifier effect exhibited strong seasonal variations, and the contribution from the diurnal cycle

  11. D0 Silicon Upgrade: Control Dewar Venturi Calibration Explanation for Toshiba

    SciTech Connect

    Kuwazaki, Andrew; /Fermilab

    1997-01-24

    This document is intended to explain the calibration data for the venturi, FE-3253H, which is installed in the control dewar. Further, this document will help explain how to use the venturi to make mass flow measurements during typical operating conditions. The purpose of the calibration data enclosed from the Colorado Engineering Experiment Station Inc. is to experimentally show that the venturi follows the flow equation which is enclosed as Eq. 7-36 on page 155, from the Applied Fluid Dynamics Handbook. The calibration data serves to show that the Subsonic Venturi, Serial Number 611980-18, produces results predicted by the compressible subsonic flow mass flow rate equation above and to experimentally determine the discharge coefficient C. Colorado Engineering Experiment Station Inc. ran tests at 15 independent differential pressures to conclude that use of this venturi will perform according to the mass flow rate equation. In order to verify the results from the Colorado Engineering Experiment Station Inc. we have provided you with a step-by-step procedure using the values they have chosen.

  12. Controlled Release of Antibiotics From Vitamin E-Loaded Silicone-Hydrogel Contact Lenses.

    PubMed

    Paradiso, Patrizia; Serro, Ana Paula; Saramago, Benilde; Colaço, Rogério; Chauhan, Anuj

    2016-03-01

    Symptoms of bacterial and fungal keratitis are typically treated through the frequent application of antibiotic and antifungal eye drops. The high frequency of half hourly or hourly eye drop administration required to treat these indications is tedious and could reduce compliance. Here, we combine in vitro experiments with a mathematical model to develop therapeutic soft contact lenses to cure keratitis by extended release of suitable drugs. We specifically focus on increasing the release duration of levofloxacin and chlorhexidine from 1-DAY ACUVUE(®) TrueEye™ and ACUVUE OASYS(®) contact lenses by incorporating vitamin E diffusion barriers. Results show that 20% of vitamin E loading in the contact lens increases the release duration of levofloxacin to 100 h and 50 h from 1-DAY ACUVUE(®) TrueEye™ and ACUVUE OASYS(®), respectively, which is a 3- and 6-fold increase, respectively, for the 2 lenses. For chlorhexidine, the increase is 2.5- and 10-fold, for the TrueEye™ and OASYS(®), respectively, to 130 h and 170 h. The mass of drug loaded in the lenses can be controlled to achieve a daily release comparable to the commonly prescribed eye drop therapy. The vitamin E-loaded lenses retain all critical properties for in vivo use.

  13. Characterization and properties of controlled nucleation thermochemical deposited (CNTD) silicon carbide

    NASA Technical Reports Server (NTRS)

    Dutta, S.; Rice, R. W.; Graham, H. C.; Mendiratta, M. C.

    1978-01-01

    The microstructure of controlled nucleation thermochemical deposition (CNTD) - SiC material was studied and the room temperature and high temperature bend strength and oxidation resistance was evaluated. Utilizing the CNTD process, ultrafine grained (0.01-0.1 mm) SiC was deposited on W - wires (0.5 mm diameter by 20 cm long) as substrates. The deposited SiC rods had superior surface smoothness and were without any macrocolumnar growth commonly found in conventional CVD material. At both room and high temperature (1200 - 1380 C), the CNTD - SiC exhibited bend strength approximately 200,000 psi (1380 MPa), several times higher than that of hot pressed, sintered, or CVD SiC. The excellent retention of strength at high temperature was attributed to the high purity and fine grain size of the SiC deposit and the apparent absence of grain growth at elevated temperatures. The rates of weight change for CNTD - SiC during oxidation were lower than for NC-203 (hot pressed SiC), higher than for GE's CVD - SiC, and considerably below those for HS-130 (hot pressed Si3N4). The high purity, fully dense, and stable grain size CNTD - SiC material shows potential for high temperature structural applications; however problem areas might include: scaling the process to make larger parts, deposition on removable substrates, and the possible residual tensile stress.

  14. Surface trimming of silicon photonics devices using controlled reactive ion etching chemistry

    NASA Astrophysics Data System (ADS)

    Chandran, S.; Das, B. K.

    2015-06-01

    Surface trimming of rib waveguides fabricated in 5-μm SOI substrate has been carried out successfully without any significant increase of propagation losses. A reactive ion etching chemistry has been optimized for trimming and an empirical model has been developed to obtain the resulting waveguide geometries. This technique has been used to demonstrate smaller footprint devices like multimode interference based power splitters and ring resonators after defining them photolithographically with relatively large cross-section rib waveguides. We have been also successful to fabricate 2D tapered spot-size converter useful for monolithic integration of waveguides with varying heights and widths. The taper length is again precisely controlled by photolithographic definition. Minimum insertion loss of such a spot-size converter integrated between waveguides with 3-μm height difference has been recorded to be ∼2 dB. It has been also shown that the overall fiber-to-chip coupling loss can be reduced by >3 dB by using such spot-size converters at the input/output side of the waveguides.

  15. Effect of temperature on rectified diffusion during ultrasound-induced heating.

    PubMed

    Webb, Ian R; Payne, Stephen J; Coussios, Constantin-C

    2011-11-01

    Experimental observations of delayed-onset cavitation during ultrasound insonation have been suggested as being caused by a change in the size distribution of the bubble population due to rectified diffusion. To investigate this hypothesis, a single bubble model is used here to explore the effect of heating and the subsequent elevated temperatures on the rectified diffusion process. Numerical solution of the model, which includes the temperature dependences of seven relevant physical parameters, allows quantification of the change in the pressure threshold for rectified diffusion, as well as the importance of the bulk liquid saturation concentration in determining bubble evolution. Although elevated temperatures and liquid supersaturation reduce the rectified diffusion threshold, it remains coincident with the inertial cavitation thresholds at submicron bubble sizes at all temperatures. This observation suggests that changes in the nucleation environment, rather than bubble growth due to rectified diffusion, is a more likely cause of delayed-onset cavitation events.

  16. Direct Production of Silicones From Sand

    SciTech Connect

    Larry N. Lewis; F.J. Schattenmann: J.P. Lemmon

    2001-09-30

    Silicon, in the form of silica and silicates, is the second most abundant element in the earth's crust. However the synthesis of silicones (scheme 1) and almost all organosilicon chemistry is only accessible through elemental silicon. Silicon dioxide (sand or quartz) is converted to chemical-grade elemental silicon in an energy intensive reduction process, a result of the exceptional thermodynamic stability of silica. Then, the silicon is reacted with methyl chloride to give a mixture of methylchlorosilanes catalyzed by cooper containing a variety of tract metals such as tin, zinc etc. The so-called direct process was first discovered at GE in 1940. The methylchlorosilanes are distilled to purify and separate the major reaction components, the most important of which is dimethyldichlorosilane. Polymerization of dimethyldichlorosilane by controlled hydrolysis results in the formation of silicone polymers. Worldwide, the silicones industry produces about 1.3 billion pounds of the basic silicon polymer, polydimethylsiloxane.

  17. A Novel Approach of Daunorubicin Application on Formation of Proliferative Retinopathy Using a Porous Silicon Controlled Delivery System: Pharmacodynamics

    PubMed Central

    Hou, Huiyuan; Huffman, Kristyn; Rios, Sandy; Freeman, William R.; Sailor, Michael J.; Cheng, Lingyun

    2015-01-01

    Purpose. Proliferative vitreoretinopathy (PVR) is the most common cause of poor visual outcomes in association with retinal detachment surgeries and ocular trauma. Daunorubicin (DNR) has shown the strongest efficacy in proliferation inhibition in vitro. However, clinical studies have shown only mild effect owing to limitations of narrow therapeutic window and short vitreous half-life. Methods. Three milligrams of DNR-loaded particles were intravitreally injected into 18 pigmented rabbits, and vitreous samples were collected up to 84 days for analysis. Thirty-seven rabbits were used for a dose-escalation (1, 3, 6 mg) safety and efficacy study in a rabbit PVR model using a pretreatment design. Results. Loading efficiency of DNR was 108.55 ± 12 μg per 1 mg particles. Eighty-four days of follow-up did not reveal any adverse reaction. Pharmacokinetic analysis demonstrated a vitreous half-life of 29 days with a maximum DNR concentration of 178 ng/mL and a minimum concentration of 29 ng/mL at day 84. Daunorubicin-loaded porous silicon (pSi) particles were dosed 8 to 9 weeks before PVR induction, and PVR severity score was dose dependent (Spearman ρ = −0.25, P = 0.0005). Proliferative vitreoretinopathy with tractional retinal detachment was 88% in the control group, 63% in the low-dose group, 14% in the medium-dose group, and 0% in the high-dose group (Cochran-Armitage Trend Test, Z = 8.99, ρ = −0.67, P < 0.0001). Conclusions. Daunorubicin-loaded pSi particles can safely reside in the vitreous for at least 3 months. The pSi-based delivery expanded the therapeutic window of DNR by a factor of 862 and drove down the minimum effective concentration by a factor of 175. PMID:25829415

  18. Controlled Directional Motions of Molecular Vehicles, Rotors, and Motors: From Metallic to Silicon Surfaces, a Strategy to Operate at Higher Temperatures.

    PubMed

    Chérioux, Frédéric; Galangau, Olivier; Palmino, Frank; Rapenne, Gwénaël

    2016-06-17

    In the last decade, many nanomachines with controlled molecular motions have been studied, mainly on metallic surfaces, which are easy to obtain very clean, and are stable over months. However, the studies of mechanical properties of nanomachines are mainly performed at very low temperatures, usually between 5 and 80 K, which prevents any kind of applications. In this Minireview, we will present our strategy to operate at higher temperatures, in particular through the use of semiconducting silicon surfaces. We also review our best achievements in the field through some examples of rotating molecular machines that have been designed, synthesized, and studied in our groups. On metallic surfaces, the nanovehicles are molecules with two or four triptycenes as wheels and the molecular motor is built around a ruthenium organometallic center with a piano-stool geometry and peripheric ferrocenyl groups. On semiconducting silicon surfaces, vehicles are also made from triptycene fragments and the rotor is a pentaphenylbenzene molecule.

  19. Rectified Motion of Microparticles: Generalizing Streaming and Radiation Forces

    NASA Astrophysics Data System (ADS)

    Raju, David; Agarwal, Siddhansh; Rallabandi, Bhargav; Hilgenfeldt, Sascha

    2016-11-01

    It is well known that a wide variety of oscillating flows gives rise to steady streaming, i.e., rectified motion of fluid elements. Small spherical particles introduced into such a flow have been shown to experience an additional lift force that ultimately leads to particle trajectories that differ systematically from the fluid element pathlines. We demonstrate a systematic derivation of this differential particle motion on the steady streaming time scale, so that time-averaged particle trajectories can be directly predicted without computation on the fast, oscillatory time scale. The resulting dynamics can be interpreted as a generalization of streaming flow, while the closed-form lift force provides a generalization of the secondary radiation force, to which it reduces in appropriate limiting cases. These very general results are validated by comparison with experiments in the context of bubble streaming, but apply to a large class of other flows as well.

  20. Hot electron pump: a plasmonic rectifying antenna (Presentation Recording)

    NASA Astrophysics Data System (ADS)

    Yanik, Ahmet A.; Hossain, Golam I.

    2015-09-01

    Plasmonic nanostructures have been widely explored to improve absorption efficiency of conventional solar cells, either by employing them as a light scatterer, or as a source of local field enhancement. Unavoidable ohmic loss associated with the plasmonic metal nanostructures in visible spectrum, limits the efficiency improvement of photovoltaic devices by employing this local photon density of states (LDOS) engineering approach. Instead of using plasmonic structures as efficiency improving layer, recently, there has been a growing interest in exploring plasmoinc nanoparticle as the active medium for photovoltaic device. By extracting hot electrons that are created in metallic nanoparticles in a non-radiative Landau decay of surface plasmons, many novel plasmonic photovoltaic devices have been proposed. Moreover, these hot electrons in metal nanoparticles promises high efficiency with a spectral response that is not limited by the band gap of the semiconductors (active material of conventional solar cell). In this work, we will show a novel photovoltaic configuration of plasmonic nanoparticle that acts as an antenna by capturing free space ultrahigh frequency electromagnetic wave and rectify them through an ultrafast hot electron pump and eventually inject DC current in the contact of the device. We will introduce a bottom-up quantum mechanical approach model to explain fundamental physical processes involved in this hot electron pump rectifying antenna and it's ultrafast dynamics. Our model is based on non-equilibrium Green's function formalism, a robust theoretical framework to investigate transport and design nanoscale electronic devices. We will demonstrate some fundamental limitations that go the very foundations of quantum mechanics.

  1. Reversible Cycling of Silicon and Silicon Alloys

    NASA Astrophysics Data System (ADS)

    Obrovac, Mark

    2012-02-01

    Lithium ion batteries typically use a graphite negative electrode. Silicon can store more lithium than any other element and has long been considered as an attractive replacement for graphite. The theoretical lithium storage capacity of silicon is nearly ten times higher than graphite volumetrically and three times higher gravimetrically. The equilibrium Si-Li binary system is well known. Completely new phase behaviors are observed at room temperature. This includes the formation of a new phase, Li15Si4, which is the highest lithium containing phase at room temperature [1]. The formation of Li15Si4 is accompanied by a 280 percent volume expansion of silicon. During de-alloying this phase contracts, forming amorphous silicon. The volume expansion of alloys can cause intra-particle fracture and inter-particle disconnection; leading to loss of cycle life. To overcome issues with volume expansion requires a detailed knowledge of Li-Si phase behavior, careful design of the composition and nanostructure of the alloy and the microstructure of the negative electrode [2]. In this presentation the phase behavior of the Li-Si system will be described. Using this knowledge alone, strategies can be developed so that silicon can be reversibly cycled in a battery hundreds of times. Further increases in energy density and efficiency can be gained by alloying silicon with other elements, while controlling microstructure [2]. Coupled with negative electrode design strategies, practical negative electrodes for lithium ion cells can be developed based on bulk materials, with significant energy density improvement over conventional electrodes. [4pt] [1] M.N. Obrovac and L.J. Krause, J. Electrochem. Soc., 154 (2007) A103. [0pt] [2] M.N. Obrovac, Leif Christensen, Dinh Ba Le, and J.R. Dahn, J. Electrochem. Soc., 154 (2007) A849

  2. Design and evaluation of a silicon based multi-nozzle for addressable jetting using a controlled flow rate in electrohydrodynamic jet printing

    NASA Astrophysics Data System (ADS)

    Lee, Jun-Sung; Kim, Sang-Yoon; Kim, Young-Jae; Park, Jaehong; Kim, Yong; Hwang, Jungho; Kim, Yong-Jun

    2008-12-01

    This letter reports on the development and evaluation of a electrohydrodynamic jet printing that uses an addressable multinozzle. To reduce the interference and distortion in the electric field, a multinozzle was fabricated from a silicon wafer. The experimental conditions were optimized to prevent the jet from bending at the end of the multinozzle and to allow for independent control of each nozzle. To better evaluate this technique, simulations were performed and compared with the experimental results. We observed a strong correlation between the simulated and experimental results. In addition, each nozzle in this multinozzle could be individually controlled.

  3. Polycrystalline silicon availability for photovoltaic and semiconductor industries

    NASA Technical Reports Server (NTRS)

    Ferber, R. R.; Costogue, E. N.; Pellin, R.

    1982-01-01

    Markets, applications, and production techniques for Siemens process-produced polycrystalline silicon are surveyed. It is noted that as of 1982 a total of six Si materials suppliers were servicing a worldwide total of over 1000 manufacturers of Si-based devices. Besides solar cells, the Si wafers are employed for thyristors, rectifiers, bipolar power transistors, and discrete components for control systems. An estimated 3890 metric tons of semiconductor-grade polycrystalline Si will be used in 1982, and 6200 metric tons by 1985. Although the amount is expected to nearly triple between 1982-89, research is being carried out on the formation of thin films and ribbons for solar cells, thereby eliminating the waste produced in slicing Czolchralski-grown crystals. The free-world Si production in 1982 is estimated to be 3050 metric tons. Various new technologies for the formation of polycrystalline Si at lower costs and with less waste are considered. New entries into the industrial Si formation field are projected to produce a 2000 metric ton excess by 1988.

  4. Double-plasma enhanced carbon shield for spatial/interfacial controlled electrodes in lithium ion batteries via micro-sized silicon from wafer waste

    NASA Astrophysics Data System (ADS)

    Chen, Bing-Hong; Chuang, Shang-I.; Duh, Jenq-Gong

    2016-11-01

    Using spatial and interfacial control, the micro-sized silicon waste from wafer slurry could greatly increase its retention potential as a green resource for silicon-based anode in lithium ion batteries. Through step by step spatial and interfacial control for electrode, the cyclability of recycled waste gains potential performance from its original poor retention property. In the stages of spatial control, the electrode stabilizers of active, inactive and conductive additives were mixed into slurries for maintaining architecture and conductivity of electrode. In addition, a fusion electrode modification of interfacial control combines electrolyte additive, technique of double-plasma enhanced carbon shield (D-PECS) to convert the chemical bond states and to alter the formation of solid electrolyte interphases (SEIs) in the first cycle. The depth profiles of chemical composition from external into internal electrode illustrate that the fusion electrode modification not only forms a boundary to balance the interface between internal and external electrodes but also stabilizes the SEIs formation and soothe the expansion of micro-sized electrode. Through these effect approaches, the performance of micro-sized Si waste electrode can be boosted from its serious capacity degradation to potential retention (200 cycles, 1100 mAh/g) and better meet the requirements for facile and cost-effective in industrial production.

  5. Effects of hydrodynamic interactions on rectified transport of self-propelled particles

    NASA Astrophysics Data System (ADS)

    Ai, Bao-quan; He, Ya-feng; Zhong, Wei-rong

    2017-01-01

    Directed transport of self-propelled particles is numerically investigated in a three-dimensional asymmetric potential. Beside the steric repulsive forces, hydrodynamic interactions between particles have been taken into account in an approximate way. From numerical simulations, we find that hydrodynamic interactions can strongly affect the rectified transport of self-propelled particles. Hydrodynamic interactions enhance the performance of the rectified transport when particles can easily pass across the barrier of the potential, and reduce the rectified transport when particles are mainly trapped in the potential well.

  6. Silicon nitride/silicon carbide composite powders

    DOEpatents

    Dunmead, Stephen D.; Weimer, Alan W.; Carroll, Daniel F.; Eisman, Glenn A.; Cochran, Gene A.; Susnitzky, David W.; Beaman, Donald R.; Nilsen, Kevin J.

    1996-06-11

    Prepare silicon nitride-silicon carbide composite powders by carbothermal reduction of crystalline silica powder, carbon powder and, optionally, crystalline silicon nitride powder. The crystalline silicon carbide portion of the composite powders has a mean number diameter less than about 700 nanometers and contains nitrogen. The composite powders may be used to prepare sintered ceramic bodies and self-reinforced silicon nitride ceramic bodies.

  7. Analysis of three-phase rectifiers with AC-side switches and interleaved three-phase voltage-source converters

    NASA Astrophysics Data System (ADS)

    Miller, Stephanie Katherine Teixeira

    Of all the alternative and renewable energy sources, wind power is the fastest growing alternative energy source with a total worldwide capacity of over 93 GW as of the end of 2007. However, making wind energy a sustainable and reliable source of electricity doesn't come without its set of challenges. As the wind turbines increase in size and turbine technology moves towards off-shore wind farms and direct drive transmission, the need for a reliable and efficient power electronics interface to convert the variable-frequency variable-magnitude output of the wind turbine's generator into the fixed-frequency fixed-magnitude voltage of the utility grid is critical. This dissertation investigates a power electronics interface envisioned to operate with an induction generator-based variable-speed wind turbine. The research conclusions and the interface itself are applicable to a variety of applications, including uninterruptible power supplies, industrial drives, and power quality applications, among others. The three-phase PWM rectifiers with ac-side bidirectional switches are proposed as the rectification stage of the power electronics interface. Modulation strategies are proposed for the rectifiers and the operation of the rectifiers in conjunction with an induction generator is demonstrated. The viability of using these rectifiers in place of the standard three-phase voltage-source converter is analyzed by comparing losses and common-mode voltage generation of the two topologies. Parallel three-phase voltage-source converter modules operated in an interleaved fashion are proposed for the inversion stage of the power electronics interface. The interleaved three-phase voltage-source converters are analyzed by deriving analytical models for the common-mode voltage, ac phase current, and dc-link current to reveal their spectra and the harmonic cancellation effects of interleaving. The practical problem of low frequency circulating current in parallel voltage

  8. An RF energy harvester system using UHF micropower CMOS rectifier based on a diode connected CMOS transistor.

    PubMed

    Shokrani, Mohammad Reza; Khoddam, Mojtaba; Hamidon, Mohd Nizar B; Kamsani, Noor Ain; Rokhani, Fakhrul Zaman; Shafie, Suhaidi Bin

    2014-01-01

    This paper presents a new type diode connected MOS transistor to improve CMOS conventional rectifier's performance in RF energy harvester systems for wireless sensor networks in which the circuits are designed in 0.18  μm TSMC CMOS technology. The proposed diode connected MOS transistor uses a new bulk connection which leads to reduction in the threshold voltage and leakage current; therefore, it contributes to increment of the rectifier's output voltage, output current, and efficiency when it is well important in the conventional CMOS rectifiers. The design technique for the rectifiers is explained and a matching network has been proposed to increase the sensitivity of the proposed rectifier. Five-stage rectifier with a matching network is proposed based on the optimization. The simulation results shows 18.2% improvement in the efficiency of the rectifier circuit and increase in sensitivity of RF energy harvester circuit. All circuits are designed in 0.18 μm TSMC CMOS technology.

  9. Patterned porous silicon photonic crystals with modular surface chemistry for spatial control of neural stem cell differentiation

    NASA Astrophysics Data System (ADS)

    Huang, Tiffany H.; Pei, Yi; Zhang, Douglas; Li, Yanfen; Kilian, Kristopher A.

    2016-05-01

    We present a strategy to spatially define regions of gold and nanostructured silicon photonics, each with materials-specific surface chemistry, for azide-alkyne cycloaddition of different bioactive peptides. Neural stem cells are spatially directed to undergo neurogenesis and astrogenesis as a function of both surface properties and peptide identity.We present a strategy to spatially define regions of gold and nanostructured silicon photonics, each with materials-specific surface chemistry, for azide-alkyne cycloaddition of different bioactive peptides. Neural stem cells are spatially directed to undergo neurogenesis and astrogenesis as a function of both surface properties and peptide identity. Electronic supplementary information (ESI) available. See DOI: 10.1039/c5nr08327c

  10. The electrophotonic silicon biosensor

    PubMed Central

    Juan-Colás, José; Parkin, Alison; Dunn, Katherine E.; Scullion, Mark G.; Krauss, Thomas F.; Johnson, Steven D.

    2016-01-01

    The emergence of personalized and stratified medicine requires label-free, low-cost diagnostic technology capable of monitoring multiple disease biomarkers in parallel. Silicon photonic biosensors combine high-sensitivity analysis with scalable, low-cost manufacturing, but they tend to measure only a single biomarker and provide no information about their (bio)chemical activity. Here we introduce an electrochemical silicon photonic sensor capable of highly sensitive and multiparameter profiling of biomarkers. Our electrophotonic technology consists of microring resonators optimally n-doped to support high Q resonances alongside electrochemical processes in situ. The inclusion of electrochemical control enables site-selective immobilization of different biomolecules on individual microrings within a sensor array. The combination of photonic and electrochemical characterization also provides additional quantitative information and unique insight into chemical reactivity that is unavailable with photonic detection alone. By exploiting both the photonic and the electrical properties of silicon, the sensor opens new modalities for sensing on the microscale. PMID:27624590

  11. The electrophotonic silicon biosensor

    NASA Astrophysics Data System (ADS)

    Juan-Colás, José; Parkin, Alison; Dunn, Katherine E.; Scullion, Mark G.; Krauss, Thomas F.; Johnson, Steven D.

    2016-09-01

    The emergence of personalized and stratified medicine requires label-free, low-cost diagnostic technology capable of monitoring multiple disease biomarkers in parallel. Silicon photonic biosensors combine high-sensitivity analysis with scalable, low-cost manufacturing, but they tend to measure only a single biomarker and provide no information about their (bio)chemical activity. Here we introduce an electrochemical silicon photonic sensor capable of highly sensitive and multiparameter profiling of biomarkers. Our electrophotonic technology consists of microring resonators optimally n-doped to support high Q resonances alongside electrochemical processes in situ. The inclusion of electrochemical control enables site-selective immobilization of different biomolecules on individual microrings within a sensor array. The combination of photonic and electrochemical characterization also provides additional quantitative information and unique insight into chemical reactivity that is unavailable with photonic detection alone. By exploiting both the photonic and the electrical properties of silicon, the sensor opens new modalities for sensing on the microscale.

  12. Molecular basis of the delayed rectifier current I(ks)in heart.

    PubMed

    Kurokawa, J; Abriel, H; Kass, R S

    2001-05-01

    J. Kurokawa, H. Abriel and R. S. Kass. Molecular Basis of the Delayed Rectifier Current I(Ks)in Heart. Journal of Molecular and Cellular Cardiology (2001) 33, 873-882. Electrical activity underlies the control of the frequency, strength, and duration of contraction of the heart. During the cardiac cycle, a regular rhythmic pattern must be established in time-dependent changes in ionic conductances in order to ensure events that underlie normal cardiac function. This pattern must be tightly regulated by sympathetic nervous activity to ensure a physiologically relevant relationship between diastolic filling and ejection times with variable heart rate. The duration of the ventricular action potential is controlled in part by a slowly activated potassium channel current, I(Ks). The molecular identity of the subunits that comprise the channels conducting this current is important, not only for understanding the fundamental mechanisms that control electrical activity in healthy individuals, but also for understanding the molecular basis of at least one inherited human disease, LQTS-1. This brief review summarizes key points of information regarding the molecular determinants of the activity of these channels, their relationship to human disease, and what is known, and yet to be discovered, about the molecular determinants of the regulation of this channel by sympathetic nervous activity.

  13. Graphene ballistic nano-rectifier with very high responsivity

    NASA Astrophysics Data System (ADS)

    Auton, Gregory; Zhang, Jiawei; Kumar, Roshan Krishna; Wang, Hanbin; Zhang, Xijian; Wang, Qingpu; Hill, Ernie; Song, Aimin

    2016-05-01

    Although graphene has the longest mean free path of carriers of any known electronic material, very few novel devices have been reported to harness this extraordinary property. Here we demonstrate a ballistic nano-rectifier fabricated by creating an asymmetric cross-junction in single-layer graphene sandwiched between boron nitride flakes. A mobility ~200,000 cm2 V-1 s-1 is achieved at room temperature, well beyond that required for ballistic transport. This enables a voltage responsivity as high as 23,000 mV mW-1 with a low-frequency input signal. Taking advantage of the output channels being orthogonal to the input terminals, the noise is found to be not strongly influenced by the input. Hence, the corresponding noise-equivalent power is as low as 0.64 pW Hz-1/2. Such performance is even comparable to superconducting bolometers, which however need to operate at cryogenic temperatures. Furthermore, output oscillations are observed at low temperatures, the period of which agrees with the lateral size quantization.

  14. Graphene ballistic nano-rectifier with very high responsivity

    PubMed Central

    Auton, Gregory; Zhang, Jiawei; Kumar, Roshan Krishna; Wang, Hanbin; Zhang, Xijian; Wang, Qingpu; Hill, Ernie; Song, Aimin

    2016-01-01

    Although graphene has the longest mean free path of carriers of any known electronic material, very few novel devices have been reported to harness this extraordinary property. Here we demonstrate a ballistic nano-rectifier fabricated by creating an asymmetric cross-junction in single-layer graphene sandwiched between boron nitride flakes. A mobility ∼200,000 cm2 V−1 s−1 is achieved at room temperature, well beyond that required for ballistic transport. This enables a voltage responsivity as high as 23,000 mV mW−1 with a low-frequency input signal. Taking advantage of the output channels being orthogonal to the input terminals, the noise is found to be not strongly influenced by the input. Hence, the corresponding noise-equivalent power is as low as 0.64 pW Hz−1/2. Such performance is even comparable to superconducting bolometers, which however need to operate at cryogenic temperatures. Furthermore, output oscillations are observed at low temperatures, the period of which agrees with the lateral size quantization. PMID:27241162

  15. Acid-sensitive outwardly rectifying anion channels in human erythrocytes.

    PubMed

    Kucherenko, Yuliya V; Mörsdorf, Daniel; Lang, Florian

    2009-07-01

    Acid-sensitive outwardly rectifying anion channels (ASOR) have been described in several mammalian cell types. The present whole-cell patch-clamp study elucidated whether those channels are expressed in erythrocytes. To this end whole-cell recordings were made in human erythrocytes from healthy donors treated with low pH and high osmotic pressure. When the pipette solution had a reduced Cl(-) concentration, treatment of the cells with Cl(-)-containing normal and hyperosmotic (addition of sucrose and polyethelene glycol 1000 [PEG-1000] to the Ringer) media with low pH significantly increased the conductance of the cells at positive voltages. Channel activity was highest in the PEG-1000 media (95 and 300 mM PEG-1000, pH 4.5 and 4.3, respectively) where the current-voltage curves demonstrated strong outward rectification and reversed at -40 mV. Substitution of the Cl(-)-containing medium with Cl(-)-free medium resulted in a decrease of the conductance at hyperpolarizing voltages, a shift in reversal potential (to 0 mV) and loss of outward rectification. The chloride currents were inhibited by chloride channels blockers DIDS and NPPB (IC(50) for both was approximately 1 mM) but not with niflumic acid and amiloride. The observations reveal expression of ASOR in erythrocytes.

  16. Perfomance Analysi of Rectifier in NH3-H2O Absorption Heat Pump

    NASA Astrophysics Data System (ADS)

    Tsujimori, Atsushi; Ozaki, Eiichi; Nakao, Kazushige

    In order to design a rectifier in NH3-H2O absorption heat pump, the heat and mass transfer model for packed tower-type rectifiers was presented in the previous paper and it was found that the model could predict over-all mass transfer coefficient within 30(%) difference to the experimental data. Though the approximate calculation to design rectifiers is increasing important, the method of this prediction need many reiteration along the vapor and solution flow, which might not be the simplified way to design packed tower-type rectifier Thus the approximate pr . edicting method was presented in this paper. In this way, over-all mass transfer Coefficient was easily deriveded using the rectification characteristic that was determined by the dimension and geometry of rectification packing. The calculation results showed good agreement with the experimental data, regardless of kinds of rectification packing.

  17. Rectified transport of self-propelled particles: the role of alignment interaction

    NASA Astrophysics Data System (ADS)

    Ai, Bao-Quan; Zhu, Wei-Jing; He, Ya-Feng; Zhong, Wei-Rong

    2017-02-01

    We study the rectified efficiency of self-propelled particles in a confined structure in the presence of ferromagnetic (polar) and nematic alignments. It is found that purely polar alignment can greatly facilitate the rectification, and the rectified efficiency can even be up to 1. However, the purely nematic alignment suppresses the rectification for large self-propulsion speed and slightly facilitates the rectification for small self-propulsion speed. With an increase in the relative weight of polar interactions, the rectified efficiency is suddenly increased from 0–1, with the jump depending on the order switching from nematic to polar. From the point of view of dynamic ordering, we can conclude that the perfect polarly ordered phase will cause the maximal rectified efficiency, while the genuine apolarly ordered phase will suppress the rectification.

  18. Controllability of self-aligned four-terminal planar embedded metal double-gate low-temperature polycrystalline-silicon thin-film transistors on a glass substrate

    NASA Astrophysics Data System (ADS)

    Ohsawa, Hiroki; Sasaki, Shun; Hara, Akito

    2016-03-01

    Self-aligned four-terminal n-channel (n-ch) and p-channel (p-ch) planar embedded metal double-gate polycrystalline-silicon (poly-Si) thin-film transistors (TFTs) were fabricated on a glass substrate at a low temperature of 550 °C. This device includes a metal top gate (TG) and a metal bottom gate (BG), which are used as the drive and control gates or vice versa. The BG was embedded in a glass substrate, and a poly-Si channel with large lateral grains was fabricated by continuous-wave laser lateral crystallization. The threshold voltage modulation factors under various control gate voltages (γ = ΔVth/ΔVCG) were nearly equal to the theoretical predictions in both the n- and p-ch TFTs. By exploiting this high controllability, an enhancement depletion (ED) inverter was fabricated, and successful operation at 2.0 V was confirmed.

  19. Design and test of a 2.25-MW transformer rectifier assembly

    NASA Technical Reports Server (NTRS)

    Cormier, R.; Daeges, J.

    1989-01-01

    A new 2.25-MW transformer rectifier assembly was fabricated for DSS-13 at Goldstone, California. The transformer rectifier will provide constant output power of 2.25 MW at any voltage from 31 kV to 125 kV. This will give a new capability of 1 MW of RF power at X-band, provided appropriate microwave tubes are in the power amplifier. A description of the design and test results is presented.

  20. New analysis and design of a RF rectifier for RFID and implantable devices.

    PubMed

    Liu, Dong-Sheng; Li, Feng-Bo; Zou, Xue-Cheng; Liu, Yao; Hui, Xue-Mei; Tao, Xiong-Fei

    2011-01-01

    New design and optimization of charge pump rectifiers using diode-connected MOS transistors is presented in this paper. An analysis of the output voltage and Power Conversion Efficiency (PCE) is given to guide and evaluate the new design. A novel diode-connected MOS transistor for UHF rectifiers is presented and optimized, and a high efficiency N-stage charge pump rectifier based on this new diode-connected MOS transistor is designed and fabricated in a SMIC 0.18-μm 2P3M CMOS embedded EEPROM process. The new diode achieves 315 mV turn-on voltage and 415 nA reverse saturation leakage current. Compared with the traditional rectifier, the one based on the proposed diode-connected MOS has higher PCE, higher output voltage and smaller ripple coefficient. When the RF input is a 900-MHz sinusoid signal with the power ranging from -15 dBm to -4 dBm, PCEs of the charge pump rectifier with only 3-stage are more than 30%, and the maximum output voltage is 5.5 V, and its ripple coefficients are less than 1%. Therefore, the rectifier is especially suitable to passive UHF RFID tag IC and implantable devices.

  1. New Analysis and Design of a RF Rectifier for RFID and Implantable Devices

    PubMed Central

    Liu, Dong-Sheng; Li, Feng-Bo; Zou, Xue-Cheng; Liu, Yao; Hui, Xue-Mei; Tao, Xiong-Fei

    2011-01-01

    New design and optimization of charge pump rectifiers using diode-connected MOS transistors is presented in this paper. An analysis of the output voltage and Power Conversion Efficiency (PCE) is given to guide and evaluate the new design. A novel diode-connected MOS transistor for UHF rectifiers is presented and optimized, and a high efficiency N-stage charge pump rectifier based on this new diode-connected MOS transistor is designed and fabricated in a SMIC 0.18-μm 2P3M CMOS embedded EEPROM process. The new diode achieves 315 mV turn-on voltage and 415 nA reverse saturation leakage current. Compared with the traditional rectifier, the one based on the proposed diode-connected MOS has higher PCE, higher output voltage and smaller ripple coefficient. When the RF input is a 900-MHz sinusoid signal with the power ranging from −15 dBm to −4 dBm, PCEs of the charge pump rectifier with only 3-stage are more than 30%, and the maximum output voltage is 5.5 V, and its ripple coefficients are less than 1%. Therefore, the rectifier is especially suitableto passive UHF RFID tag IC and implantable devices. PMID:22163968

  2. Performance Analysis of Rectifier in NH3-H2O Absorprtion Heat Pump

    NASA Astrophysics Data System (ADS)

    Tsujimori, Atsushi; Ozaki, Eiichi; Nakao, Kazushige

    Heat and mass transfer model for plate-type rectifier was presented in the previous paper and it was found that there existed the distribution of NH3 concentration in boundary layer in vapor and solution phase, which was the resistance to heat and mass transfer. In order to enhance heat and mass transfer, packed tower-type rectifiers have been considered effective and used in the field of chemical engineering. And many data have been accumulated for each rectification-packing with give fluid to design packed tower. But it has rarely be seen to present heat and mass transfer model in order to evaluate the performance of packed tower rectifier without any experimental constant. In this study heat and mass transfer model in packed tower-type rectifier was presented considering the specification of rectification-packing decided by surface area and porosity, and the calculation results were compared with experimental data. As a result it was found that over-all mass transfer coefficient increased as mass flow rate of vapor increased and that the model could expect over-all mass transfer coefficient within 30 [%] difference to experimental data. It was also cleared that mass transfer in packed-type rectifier was two to five times more enhanced than that in plate-type rectifier.

  3. Hydrogen-silicon carbide interactions

    NASA Technical Reports Server (NTRS)

    Eckel, Andrew J.; Jacobson, Nathan S.; Misra, Ajay K.; Humphrey, Donald L.

    1989-01-01

    A study of the thermochemistry and kinetics of hydrogen environmental attack of silicon carbide was conducted for temperatures in the range from 1100 C to 1400 C. Thermodynamic maps based on the parameters of pressure and oxygen/moisture content were constructed. With increasing moisture levels, four distinct regions of attack were identified. Each region is defined by the thermodynamically stable solid phases. The theoretically stable solid phases of Region 1 are silicon carbide and silicon. Experimental evidence is provided to support this thermodynamic prediction. Silicon carbide is the single stable solid phase in Region 2. Active attack of the silicon carbide in this region occurs by the formation of gases of SiO, CO, CH4, SiH4, and SiH. Analysis of the kinetics of reaction for Region 2 at 1300 C show the attack of the silicon carbide to be controlled by gas phase diffusion of H2O to the sample. Silicon carbide and silica are the stable phases common to Regions 3 and 4. These two regions are characterized by the passive oxidation of silicon carbide and formation of a protective silica layer.

  4. Intermediate Bandgap Solar Cells From Nanostructured Silicon

    SciTech Connect

    Black, Marcie

    2014-10-30

    This project aimed to demonstrate increased electronic coupling in silicon nanostructures relative to bulk silicon for the purpose of making high efficiency intermediate bandgap solar cells using silicon. To this end, we formed nanowires with controlled crystallographic orientation, small diameter, <111> sidewall faceting, and passivated surfaces to modify the electronic band structure in silicon by breaking down the symmetry of the crystal lattice. We grew and tested these silicon nanowires with <110>-growth axes, which is an orientation that should produce the coupling enhancement.

  5. Locale and chemistry of spermine binding in the archetypal inward rectifier Kir2.1.

    PubMed

    Kurata, Harley T; Zhu, Emily A; Nichols, Colin G

    2010-05-01

    Polyamine block of inwardly rectifying potassium (Kir) channels underlies their steep voltage dependence observed in vivo. We have examined the potency, voltage dependence, and kinetics of spermine block in dimeric Kir2.1 constructs containing one nonreactive subunit and one cysteine-substituted subunit before and after modification by methanethiosulfonate (MTS) reagents. At position 169C (between the D172 "rectification controller" and the selectivity filter), modification by either 2-aminoethyl MTS (MTSEA) or 2-(trimethylammonium)ethyl MTS (MTSET) reduced the potency and voltage dependence of spermine block, consistent with this position overlapping the spermine binding site. At position 176C (between D172 and the M2 helix bundle crossing), modification by MTSEA also weakened spermine block. In contrast, MTSET modification of 176C dramatically slowed the kinetics of spermine unblock, with almost no effect on potency or voltage dependence. The data are consistent with MTSET modification of 176C introducing a localized barrier in the inner cavity, resulting in slower spermine entry into and exit from a "deep" binding site (likely between the D172 rectification controller and the selectivity filter), but leaving the spermine binding site mostly unaffected. These findings constrain the location of deep spermine binding that underlies steeply voltage-dependent block, and further suggest important chemical details of high affinity binding of spermine in Kir2.1 channels-the archetypal model of strong inward rectification.

  6. Long-pore Electrostatics in Inward-rectifier Potassium Channels

    PubMed Central

    Robertson, Janice L.; Palmer, Lawrence G.; Roux, Benoît

    2008-01-01

    Inward-rectifier potassium (Kir) channels differ from the canonical K+ channel structure in that they possess a long extended pore (∼85 Å) for ion conduction that reaches deeply into the cytoplasm. This unique structural feature is presumably involved in regulating functional properties specific to Kir channels, such as conductance, rectification block, and ligand-dependent gating. To elucidate the underpinnings of these functional roles, we examine the electrostatics of an ion along this extended pore. Homology models are constructed based on the open-state model of KirBac1.1 for four mammalian Kir channels: Kir1.1/ROMK, Kir2.1/IRK, Kir3.1/GIRK, and Kir6.2/KATP. By solving the Poisson-Boltzmann equation, the electrostatic free energy of a K+ ion is determined along each pore, revealing that mammalian Kir channels provide a favorable environment for cations and suggesting the existence of high-density regions in the cytoplasmic domain and cavity. The contribution from the reaction field (the self-energy arising from the dielectric polarization induced by the ion's charge in the complex geometry of the pore) is unfavorable inside the long pore. However, this is well compensated by the electrostatic interaction with the static field arising from the protein charges and shielded by the dielectric surrounding. Decomposition of the static field provides a list of residues that display remarkable correspondence with existing mutagenesis data identifying amino acids that affect conduction and rectification. Many of these residues demonstrate interactions with the ion over long distances, up to 40 Å, suggesting that mutations potentially affect ion or blocker energetics over the entire pore. These results provide a foundation for understanding ion interactions in Kir channels and extend to the study of ion permeation, block, and gating in long, cation-specific pores. PMID:19001143

  7. BOREAS TE-18, 30-m, Radiometrically Rectified Landsat TM Imagery

    NASA Technical Reports Server (NTRS)

    Hall, Forrest G. (Editor); Knapp, David

    2000-01-01

    The BOREAS TE-18 team used a radiometric rectification process to produce standardized DN values for a series of Landsat TM images of the BOREAS SSA and NSA in order to compare images that were collected under different atmospheric conditions. The images for each study area were referenced to an image that had very clear atmospheric qualities. The reference image for the SSA was collected on 02-Sep-1994, while the reference image for the NSA was collected on 21-Jun-1995. the 23 rectified images cover the period of 07-Jul-1985 to 18 Sep-1994 in the SSA and from 22-Jun-1984 to 09-Jun-1994 in the NSA. Each of the reference scenes had coincident atmospheric optical thickness measurements made by RSS-11. The radiometric rectification process is described in more detail by Hall et al. (199 1). The original Landsat TM data were received from CCRS for use in the BOREAS project. The data are stored in binary image-format files. Due to the nature of the radiometric rectification process and copyright issues, these full-resolution images may not be publicly distributed. However, a spatially degraded 60-m resolution version of the images is available on the BOREAS CD-ROM series. See Sections 15 and 16 for information about how to possibly acquire the full resolution data. Information about the full-resolution images is provided in an inventory listing on the CD-ROMs. The data files are available on a CD-ROM (see document number 20010000884), or from the Oak Ridge National Laboratory (ORNL) Distributed Activity Archive Center (DAAC).

  8. BOREAS TE-18, 60-m, Radiometrically Rectified Landsat TM Imagery

    NASA Technical Reports Server (NTRS)

    Hall, Forrest G. (Editor); Knapp, David

    2000-01-01

    The BOREAS TE-18 team used a radiometric rectification process to produce standardized DN values for a series of Landsat TM images of the BOREAS SSA and NSA in order to compare images that were collected under different atmospheric conditions. The images for each study area were referenced to an image that had very clear atmospheric qualities. The reference image for the SSA was collected on 02-Sep-1994, while the reference image for the NSA was collected on 2 1 Jun-1995. The 23 rectified images cover the period of 07-Jul-1985 to 18-Sep-1994 in the SSA and 22-Jun-1984 to 09-Jun-1994 in the NSA. Each of the reference scenes had coincident atmospheric optical thickness measurements made by RSS-11. The radiometric rectification process is described in more detail by Hall et al. (1991). The original Landsat TM data were received from CCRS for use in the BOREAS project. Due to the nature of the radiometric rectification process and copyright issues, the full-resolution (30-m) images may not be publicly distributed. However, this spatially degraded 60-m resolution version of the images may be openly distributed and is available on the BOREAS CD-ROM series. After the radiometric rectification processing, the original data were degraded to a 60-m pixel size from the original 30-m pixel size by averaging the data over a 2- by 2-pixel window. The data are stored in binary image-format files. The data files are available on a CD-ROM (see document number 20010000884), or from the Oak Ridge National Laboratory (ORNL) Distributed Activity Archive Center (DAAC).

  9. Lithographic wavelength control of an external cavity laser with a silicon photonic crystal cavity-based resonant reflector.

    PubMed

    Liles, Alexandros A; Debnath, Kapil; O'Faolain, Liam

    2016-03-01

    We report the experimental demonstration of a new design for external cavity hybrid lasers consisting of a III-V semiconductor optical amplifier (SOA) with fiber reflector and a photonic crystal (PhC)-based resonant reflector on SOI. The silicon reflector is composed of an SU8 polymer bus waveguide vertically coupled to a PhC cavity and provides a wavelength-selective optical feedback to the laser cavity. This device exhibits milliwatt-level output power and side-mode suppression ratios of more than 25 dB.

  10. Mechanism of inhibition of delayed rectifier K+ current by 4-aminopyridine in rabbit coronary myocytes.

    PubMed Central

    Remillard, C V; Leblanc, N

    1996-01-01

    1. The mechanisms involved in the 4-aminopyridine (4-AP)-induced block of delayed rectifier K+ current (IK(V)) in vascular smooth muscle cells were studied in cells enzymatically isolated from the rabbit coronary artery. 2. 4-AP inhibited slowly inactivating IK(V) in a dose-dependent manner (concentration producing half-maximal inhibition, K1/2, = 1.37 mM), and shifted the steady-state activation and inactivation curves of IK(V) by +9 and +16 mV, respectively. 3. The time constant of activation was significantly increased by 4-AP at +20 mV; deactivation kinetics were unaffected upon repolarization to -40 mV. The fast (tau f approximately 1 s) and slow (tau s approximately 5 s) time constants of inactivation (0 and +20 mV), and the recovery kinetics (tau r approximately 6 s) at -60 mV were not significantly affected by 0.5 mM 4-AP. However, tau f disappeared in the presence of 2 mM 4-AP while tau s remained unaffected. 4. Use-dependent unblock of IK(V) was revealed at potentials > or = -10 mV from analyses of the voltage dependence of 4-AP-sensitive currents and the frequency-dependent changes ('reverse use dependence') of IK(V) during the application of repetitive steps (-60 to +20 mV for 250 ms at a rate of 0.25 Hz) in control conditions, in the presence of 0.5 mM 4-AP, and after washout of the drug. These results suggested that 4-AP preferentially binds to the channel in the closed state, and unbinding is promoted by transitions to the open state. 5. The channel was modelled as a simple three-state mathematical loop model incorporating single closed, open and inactivated states. The block by 4-AP was modelled as a state-dependent interaction with 4-AP primarily binding to the closed state. Computer simulations support the hypothesis that 4-AP-induced block of the delayed rectifier K+ (KV) channel in the closed state is relieved during membrane depolarization. 6. Closed state binding of 4-AP to the KV channel depolarizes vascular smooth muscle cells by shifting

  11. Silicon microdosimetry.

    PubMed

    Agosteo, Stefano; Pola, Andrea

    2011-02-01

    Silicon detectors are being studied as microdosemeters since they can provide sensitive volumes of micrometric dimensions. They can be applied for assessing single-event effects in electronic instrumentation exposed to complex fields around high-energy accelerators or in space missions. When coupled to tissue-equivalent converters, they can be used for measuring the quality of radiation therapy beams or for dosimetry. The use of micrometric volumes avoids the contribution of wall effects to the measured spectra. Further advantages of such detectors are their compactness, cheapness, transportability and a low sensitivity to vibrations. The following problems need to be solved when silicon devices are used for microdosimetry: (i) the sensitive volume has to be confined in a region of well-known dimensions; (ii) the electric noise limits the minimum detectable energy; (iii) corrections for tissue-equivalency should be made; (iv) corrections for shape equivalency should be made when referring to a spherical simulated site of tissue; (v) the angular response should be evaluated carefully; (vi) the efficiency of a single detector of micrometric dimensions is very poor and detector arrays should be considered. Several devices have been proposed as silicon microdosemeters, based on different technologies (telescope detectors, silicon on insulator detectors and arrays of cylindrical p-n junctions with internal amplification), in order to satisfy the issues mentioned above.

  12. CONDENSED MATTER: STRUCTURE, THERMAL AND MECHANICAL PROPERTIES: SiC based Si/SiC heterojunction and its rectifying characteristics

    NASA Astrophysics Data System (ADS)

    Zhu, Feng; Chen, Zhi-Ming; Li, Lian-Bi; Zhao, Shun-Feng; Lin, Tao

    2009-11-01

    The Si on SiC heterojunction is still poorly understood, although it has a number of potential applications in electronic and optoelectronic devices, for example, light-activated SiC power switches where Si may play the role of an light absorbing layer. This paper reports on Si films heteroepitaxially grown on the Si face of (0001) n-type 6H-SiC substrates and the use of B2H6 as a dopant for p-Si grown at temperatures in a range of 700-950 °C. X-ray diffraction (XRD) analysis and transmission electron microscopy (TEM) tests have demonstrated that the samples prepared at the temperatures ranged from 850 °C to 900 °C are characterized as monocrystalline silicon. The rocking XRD curves show a well symmetry with FWHM of 0.4339° Omega. Twin crystals and stacking faults observed in the epitaxial layers might be responsible for widening of the rocking curves. Dependence of the crystal structure and surface topography on growth temperature is discussed based on the experimental results. The energy band structure and rectifying characteristics of the Si/SiC heterojunctions are also preliminarily tested.

  13. Photocatalytic Properties of Porous Silicon Nanowires.

    PubMed

    Qu, Yongquan; Zhong, Xing; Li, Yujing; Liao, Lei; Huang, Yu; Duan, Xiangfeng

    2010-01-01

    Porous silicon nanowires are synthesized through metal assisted wet-chemical etch of highly-doped silicon wafer. The resulted porous silicon nanowires exhibit a large surface area of 337 m(2)·g(-1) and a wide spectrum absorption across the entire ultraviolet, visible and near infrared regime. We further demonstrate that platinum nanoparticles can be loaded onto the surface of the porous silicon nanowires with controlled density. These combined advancements make the porous silicon nanowires an interesting material for photocatalytic applications. We show that the porous silicon nanowires and platinum nanoparticle loaded porous silicon nanowires can be used as effective photocatalysts for photocatalytic degradation of organic dyes and toxic pollutants under visible irradiation, and thus are of significant interest for organic waste treatment and environmental remediation.

  14. Length dependence of rectification in organic co-oligomer spin rectifiers

    NASA Astrophysics Data System (ADS)

    Gui-Chao, Hu; Zhao, Zhang; Ying, Li; Jun-Feng, Ren; Chuan-Kui, Wang

    2016-05-01

    The rectification ratio of organic magnetic co-oligomer diodes is investigated theoretically by changing the molecular length. The results reveal two distinct length dependences of the rectification ratio: for a short molecular diode, the charge-current rectification changes little with the increase of molecular length, while the spin-current rectification is weakened sharply by the length; for a long molecular diode, both the charge-current and spin-current rectification ratios increase quickly with the length. The two kinds of dependence switch at a specific length accompanied with an inversion of the rectifying direction. The molecular ortibals and spin-resolved transmission analysis indicate that the dominant mechanism of rectification suffers a change at this specific length, that is, from asymmetric shift of molecular eigenlevels to asymmetric spatial localization of wave functions upon the reversal of bias. This work demonstrates a feasible way to control the rectification in organic co-oligomer spin diodes by adjusting the molecular length. Project supported by the National Natural Science Foundation of China (Grant No. 11374195), the Natural Science Foundation of Shandong Province, China (Grant No. ZR2014AM017), the Taishan Scholar Project of Shandong Province, China, and the Excellent Young Scholars Research Fund of Shandong Normal University, China.

  15. Interaction of permeant and blocking ions in cloned inward-rectifier K+ channels.

    PubMed Central

    Oliver, D; Hahn, H; Antz, C; Ruppersberg, J P; Fakler, B

    1998-01-01

    Blocking cloned inward-rectifier potassium (Kir) channels from the cytoplasmic side was analyzed with a rapid application system exchanging the intracellular solution on giant inside-out patches from Xenopus oocytes in <2 ms. Dependence of the pore-block on interaction of the blocking molecule with permeant and impermeant ions on either side of the membrane was investigated in Kir1.1 (ROMK1) channels blocked by ammonium derivatives and in Kir4.1 (BIR10) channels blocked by spermine. The blocking reaction in both systems showed first-order kinetics and allowed separate determination of on- and off-rates. The off-rates of block were strongly dependent on the concentration of internal and external bulk ions, but almost independent of the ion species at the cytoplasmic side of the membrane. With K+ as the only cation on both sides of the membrane, off-rates exhibited strong coupling to the K+ reversal potential (E(K)) and increased and decreased with reduction in intra and extracellular K+ concentration, respectively. The on-rates showed significant dependence on concentration and species of internal bulk ions. This control of rate-constants by interaction of permeant and impermeant internal and external ions governs the steady-state current-voltage relation (I-V) of Kir channels and determines their physiological function under various conditions. PMID:9591659

  16. A refined cellular automaton model to rectify impractical vehicular movement behavior

    NASA Astrophysics Data System (ADS)

    Lan, Lawrence W.; Chiou, Yu-Chiun; Lin, Zih-Shin; Hsu, Chih-Cheng

    2009-09-01

    When implementing cellular automata (CA) into a traffic simulation, one common defect yet to be rectified is the abrupt deceleration when vehicles encounter stationary obstacles or traffic jams. To be more in line with real world vehicular movement, this paper proposes a piecewise-linear movement to replace the conventional particle-hopping movement adopted in most previous CA models. Upon this adjustment and coupled with refined cell system, a new CA model is developed using the rationale of Forbes’ et al. car-following concept. The proposed CA model is validated on a two-lane freeway mainline context. It shows that this model can fix the unrealistic deceleration behaviors, and thus can reflect genuine driver behavior in the real world. The model is also capable of revealing Kerner’s three-phase traffic patterns and phase transitions among them. Furthermore, the proposed CA model is applied to simulate a highway work zone wherein traffic efficiency (maximum flow rates) and safety (speed deviations) impacted by various control schemes are tested.

  17. Controlled release delivery of penciclovir via a silicone (MED-4750) polymer: kinetics of drug delivery and efficacy in preventing primary feline herpesvirus infection in culture

    PubMed Central

    2014-01-01

    Background Herpesviruses are ubiquitous pathogens that infect and cause recurrent disease in multiple animal species. Feline herpesvirus-1 (FHV-1), a member of the alphaherpesvirus family, causes respiratory illness and conjunctivitis, and approximately 80% of domestic cats are latently infected. Oral administration of famciclovir or topical application of cidofovir has been shown in masked, placebo-controlled prospective trials to reduce clinical signs and viral shedding in experimentally inoculated cats. However, to the authors’ knowledge, other drugs have not been similarly assessed or were not safe or effective. Likewise, to our knowledge, no drugs have been assessed in a placebo-controlled manner in cats with recrudescent herpetic disease. Controlled-release devices would permit long-term administration of these drugs and enhance compliance. Methods We therefore engineered implantable cylindrical devices made from silicone (MED-4750) impregnated with penciclovir, for long-term, steady-state delivery of this drug. Results Our data show that these devices release penciclovir with a burst of drug delivery until the tenth day of release, then at an average rate of 5.063 ± 1.704 μg per day through the next 50 days with near zero-order kinetics (in comparison to MED-4750-acyclovir devices, which show the same burst kinetics and average 2.236 ± 0.625 μg/day thereafter). Furthermore, these devices suppress primary infection of FHV-1 in a cell culture system. Conclusions The clinical deployment of these silicone-penciclovir devices may allow long-term treatment of FHV-1 infection with a single intervention that could last the life of the host cat. PMID:24558980

  18. Production of electronic grade lunar silicon by disproportionation of silicon difluoride

    NASA Astrophysics Data System (ADS)

    Agosto, William N.

    1993-03-01

    Waldron has proposed to extract lunar silicon by sodium reduction of sodium fluorosilicate derived from reacting sodium fluoride with lunar silicon tetrafluoride. Silicon tetrafluoride is obtained by the action of hydrofluoric acid on lunar silicates. While these reactions are well understood, the resulting lunar silicon is not likely to meet electronic specifications of 5 nines purity. Dale and Margrave have shown that silicon difluoride can be obtained by the action of silicon tetrafluoride on elemental silicon at elevated temperatures (1100-1200 C) and low pressures (1-2 torr). The resulting silicon difluoride will then spontaneously disproportionate into hyperpure silicon and silicon tetrafluoride in vacuum at approximately 400 C. On its own merits, silicon difluoride polymerizes into a tough waxy solid in the temperature range from liquid nitrogen to about 100 C. It is the silicon analog of teflon. Silicon difluoride ignites in moist air but is stable under lunar surface conditions and may prove to be a valuable industrial material that is largely lunar derived for lunar surface applications. The most effective driver for lunar industrialization may be the prospects for industrial space solar power systems in orbit or on the moon that are built with lunar materials. Such systems would require large quantities of electronic grade silicon or compound semiconductors for photovoltaics and electronic controls. Since silicon is the most abundant semimetal in the silicate portion of any solar system rock (approximately 20 wt percent), lunar silicon production is bound to be an important process in such a solar power project. The lunar silicon extraction process is discussed.

  19. Production of electronic grade lunar silicon by disproportionation of silicon difluoride

    NASA Technical Reports Server (NTRS)

    Agosto, William N.

    1993-01-01

    Waldron has proposed to extract lunar silicon by sodium reduction of sodium fluorosilicate derived from reacting sodium fluoride with lunar silicon tetrafluoride. Silicon tetrafluoride is obtained by the action of hydrofluoric acid on lunar silicates. While these reactions are well understood, the resulting lunar silicon is not likely to meet electronic specifications of 5 nines purity. Dale and Margrave have shown that silicon difluoride can be obtained by the action of silicon tetrafluoride on elemental silicon at elevated temperatures (1100-1200 C) and low pressures (1-2 torr). The resulting silicon difluoride will then spontaneously disproportionate into hyperpure silicon and silicon tetrafluoride in vacuum at approximately 400 C. On its own merits, silicon difluoride polymerizes into a tough waxy solid in the temperature range from liquid nitrogen to about 100 C. It is the silicon analog of teflon. Silicon difluoride ignites in moist air but is stable under lunar surface conditions and may prove to be a valuable industrial material that is largely lunar derived for lunar surface applications. The most effective driver for lunar industrialization may be the prospects for industrial space solar power systems in orbit or on the moon that are built with lunar materials. Such systems would require large quantities of electronic grade silicon or compound semiconductors for photovoltaics and electronic controls. Since silicon is the most abundant semimetal in the silicate portion of any solar system rock (approximately 20 wt percent), lunar silicon production is bound to be an important process in such a solar power project. The lunar silicon extraction process is discussed.

  20. TOPICAL REVIEW: Black silicon method X: a review on high speed and selective plasma etching of silicon with profile control: an in-depth comparison between Bosch and cryostat DRIE processes as a roadmap to next generation equipment

    NASA Astrophysics Data System (ADS)

    Jansen, H V; de Boer, M J; Unnikrishnan, S; Louwerse, M C; Elwenspoek, M C

    2009-03-01

    An intensive study has been performed to understand and tune deep reactive ion etch (DRIE) processes for optimum results with respect to the silicon etch rate, etch profile and mask etch selectivity (in order of priority) using state-of-the-art dual power source DRIE equipment. The research compares pulsed-mode DRIE processes (e.g. Bosch technique) and mixed-mode DRIE processes (e.g. cryostat technique). In both techniques, an inhibitor is added to fluorine-based plasma to achieve directional etching, which is formed out of an oxide-forming (O2) or a fluorocarbon (FC) gas (C4F8 or CHF3). The inhibitor can be introduced together with the etch gas, which is named a mixed-mode DRIE process, or the inhibitor can be added in a time-multiplexed manner, which will be termed a pulsed-mode DRIE process. Next, the most convenient mode of operation found in this study is highlighted including some remarks to ensure proper etching (i.e. step synchronization in pulsed-mode operation and heat control of the wafer). First of all, for the fabrication of directional profiles, pulsed-mode DRIE is far easier to handle, is more robust with respect to the pattern layout and has the potential of achieving much higher mask etch selectivity, whereas in a mixed-mode the etch rate is higher and sidewall scalloping is prohibited. It is found that both pulsed-mode CHF3 and C4F8 are perfectly suited to perform high speed directional etching, although they have the drawback of leaving the FC residue at the sidewalls of etched structures. They show an identical result when the flow of CHF3 is roughly 30 times the flow of C4F8, and the amount of gas needed for a comparable result decreases rapidly while lowering the temperature from room down to cryogenic (and increasing the etch rate). Moreover, lowering the temperature lowers the mask erosion rate substantially (and so the mask selectivity improves). The pulsed-mode O2 is FC-free but shows only tolerable anisotropic results at -120 °C. The

  1. Reconfigurable Resonant Regulating Rectifier With Primary Equalization for Extended Coupling- and Loading-Range in Bio-Implant Wireless Power Transfer.

    PubMed

    Li, Xing; Meng, Xiaodong; Tsui, Chi-Ying; Ki, Wing-Hung

    2015-12-01

    Wireless power transfer using reconfigurable resonant regulating (R(3)) rectification suffers from limited range in accommodating varying coupling and loading conditions. A primary-assisted regulation principle is proposed to mitigate these limitations, of which the amplitude of the rectifier input voltage on the secondary side is regulated by accordingly adjusting the voltage amplitude Veq on the primary side. A novel current-sensing method and calibration scheme track Veq on the primary side. A ramp generator simultaneously provides three clock signals for different modules. Both the primary equalizer and the R(3) rectifier are implemented as custom integrated circuits fabricated in a 0.35 μm CMOS process, with the global control implemented in FPGA. Measurements show that with the primary equalizer, the workable coupling and loading ranges are extended by 250% at 120 mW load and 300% at 1.2 cm coil distance compared to the same system without the primary equalizer. A maximum rectifier efficiency of 92.5% and a total system efficiency of 62.4% are demonstrated.

  2. Crystal Structure of the Eukaryotic Strong Inward-Rectifier K[superscript +] Channel Kir2.2 at 3.1 Å Resolution

    SciTech Connect

    Tao, Xiao; Avalos, Jose L.; Chen, Jiayun; MacKinnon, Roderick

    2010-03-29

    Inward-rectifier potassium (K{sup +}) channels conduct K{sup +} ions most efficiently in one direction, into the cell. Kir2 channels control the resting membrane voltage in many electrically excitable cells, and heritable mutations cause periodic paralysis and cardiac arrhythmia. We present the crystal structure of Kir2.2 from chicken, which, excluding the unstructured amino and carboxyl termini, is 90% identical to human Kir2.2. Crystals containing rubidium (Rb{sup +}), strontium (Sr{sup 2+}), and europium (Eu{sup 3+}) reveal binding sites along the ion conduction pathway that are both conductive and inhibitory. The sites correlate with extensive electrophysiological data and provide a structural basis for understanding rectification. The channel's extracellular surface, with large structured turrets and an unusual selectivity filter entryway, might explain the relative insensitivity of eukaryotic inward rectifiers to toxins. These same surface features also suggest a possible approach to the development of inhibitory agents specific to each member of the inward-rectifier K{sup +} channel family.

  3. High-efficiency MOSFET bridge rectifier for AlN MEMS cantilever vibration energy harvester

    NASA Astrophysics Data System (ADS)

    Takei, Ryohei; Okada, Hironao; Noda, Daiji; Ohta, Ryo; Takeshita, Toshihiro; Itoh, Toshihiro; Kobayashi, Takeishi

    2017-04-01

    We developed a high-efficiency MOSFET bridge rectifier for use in an aluminum nitride (AlN) piezoelectric MEMS cantilever vibration energy harvester (VEH). The bridge rectifier consists of four MOSFETs with a circuit configuration similar to that of a typical diode bridge rectifier. The output voltage of the full-wave rectification via the MOSFET bridge was simulated with an equivalent circuit model of the AlN VEH, which is extracted from an experimental result. The channel width of the MOSFET was designed to be adopted for use with a high-voltage and low-current AlN VEH. The designed rectifier was fabricated using the 0.18 µm high voltage technology of a commercially available CMOS foundry. The AlN VEH with our bridge rectifier generated a DC power of 0.514 µW at 2.49 V under an applied vibration with an acceleration amplitude of 0.5 m/s2 at a frequency of 46.6 Hz. The DC power is 1.4 times higher than that generated by the same AlN VEH with a MOSFET bridge consisting of commercially available discrete MOSFETs.

  4. Ripple feedback for the resonant-filter unity-power-factor rectifier

    SciTech Connect

    Streng, S.A. ); King, R.J. )

    1992-07-01

    An unusual bucklike unity-power-factor rectifier with a resonant load-balancing network permits current-limited operation down to zero output voltage in a single-stage-topology. However, this rectifier has been found to be sensitive to ac-line voltage distortion and is potentially unstable with realistic values of ac-line impedance. In this paper, a new ripple feedback is proposed that solves both problems. A large-signal time-varying analysis is given along with incremental, quasi-static, and low-frequency approximations. Experimental verification is provided by a 500-W 50-kHz rectifier operating from the 120-V 60-Hz distribution system.

  5. Theoretical study on the rectifying performance of organoimido derivatives of hexamolybdates.

    PubMed

    Wen, Shizheng; Yang, Guochun; Yan, Likai; Li, Haibin; Su, Zhongmin

    2013-02-25

    We design a new type of molecular diode, based on the organoimido derivatives of hexamolybdates, by exploring the rectifying performances using density functional theory combined with the non-equilibrium Green's function. Asymmetric current-voltage characteristics were obtained for the models with an unexpected large rectification ratio. The rectifying behavior can be understood by the asymmetrical shift of the transmission peak observed under different polarities. It is interesting to find that the preferred electron-transport direction in our studied system is different from that of the organic D-bridge-A system. The results show that the studied organic-inorganic hybrid systems have an intrinsically robust rectifying ratio, which should be taken into consideration in the design of the molecular diodes.

  6. Small scale ethanol production demonstration: comparison of packed versus plate rectifying column

    SciTech Connect

    Adcock, II, L E; Eley, M H; Schroer, B J

    1982-07-01

    The Johnson Environmental and Energy Center with assistance from the Madison County Farm Bureau Association received a grant in 1980 from the US Department of Energy to design, fabricate, and evaluate a small scale continuous ethanol plant. In 1981, the Center received a second DOE grant to compare the economics of replacing the plate rectifying column in the initial unit with a packed rectifying column. The results of the study indicate that the distillation unit with the packed rectifying column is capable of producing 14 gallons per hour of 170 proof ethanol. The energy ratio for distillation was a positive 2:1. Cost of the packed column was considerably less than the plate column. 1 reference, 19 figures, 9 tables.

  7. Simple evaporation controller for thin-film deposition from a resistively heated boat

    NASA Technical Reports Server (NTRS)

    Scofield, John H.; Bajuk, Lou; Mohler, William

    1990-01-01

    A simple, inexpensive circuit is described for switching the current through a resistively heated evaporation boat during thin-film deposition. The circuit uses a silicon-controlled rectifier (SCR) to switch the 0-15-A current in the primary of a 2-kV A step-down transformer that supplies the 0-200-A current to an evaporation boat. The circuit is controlled by a 0-10 V-dc signal similar to that furnished by an Inficon XTC deposition-rate controller. This circuit may be assembled from a handful of parts for a cost of about $400, nearly one-tenth the cost of similar commercial units. Minimum construction is required, since the circuit is built around an off-the-shelf, self-contained SCR unit.

  8. Revisiting the Rectifier: New Observations of Covariance Between Terrestrial Carbon Cycling and Boundary Layer Depth (Invited)

    NASA Astrophysics Data System (ADS)

    Denning, S.; McGrath-Spangler, E. L.

    2013-12-01

    Covariance between land-surface carbon fluxes and vertical mixing in the atmosphere is among the strongest determinants of the spatial distribution of atmospheric CO2 in the lower troposphere. Differences in the magnitude of this "CO2 rectifier effect" among different tracer transport models has been shown to explain most of the variability in estimates of terrestrial carbon sinks over the northern (vs tropical) continents. We present a new analysis of the magnitude of the CO2 rectifier using a climatology of PBL depth estimated using vertical profiles of LIDAR backscatter from the CALIPSO satellite. Millions of separate soundings of PBL depth were matched with hourly estimates of photosynthesis and ecosystem respiration from the Simple Biosphere Model (SiB3) at the same locations and times over more than 6 years. Strong covariance between net carbon flux and atmospheric mixing were observed over the northern continents, especially over Boreal Asia. Negative covariance is observed over monsoon regions, which is especially strong over India. Covariance of net carbon flux with the reciprocal of PBL depth has the units of CO2 tendency (ppm per month), and can be expressed as rectifier forcing. Satellite sampling of this quantity reveals spatially-coherent patterns as strong as +/- 10 ppm per month over Siberia and India. We computed rectifier forcing with NASA's Modern Era Reanalysis (MERRA) for the same locations and times sampled by CALIPSO from 2006-2012. Comparison of the MERRA and CALIPSO data reveal that the spatial patterns and magnitudes are similar over the northern continents, but much weaker in MERRA than CALIPSO over the tropics. Using MERRA to compute the rectifier effect for SiB fluxes in GEOS-Chem allows us to establish a quantitative relationship between rectifier forcing and response that is evaluated against the CALIPSO boundary layer data. We propose a framework for model intercomparison and evaluation that can leverage the rich new data set.

  9. Damage Mechanisms and Controlled Crack Propagation in a Hot Pressed Silicon Nitride Ceramic. Ph.D. Thesis - Northwestern Univ., 1993

    NASA Technical Reports Server (NTRS)

    Calomino, Anthony Martin

    1994-01-01

    The subcritical growth of cracks from pre-existing flaws in ceramics can severely affect the structural reliability of a material. The ability to directly observe subcritical crack growth and rigorously analyze its influence on fracture behavior is important for an accurate assessment of material performance. A Mode I fracture specimen and loading method has been developed which permits the observation of stable, subcritical crack extension in monolithic and toughened ceramics. The test specimen and procedure has demonstrated its ability to generate and stably propagate sharp, through-thickness cracks in brittle high modulus materials. Crack growth for an aluminum oxide ceramic was observed to be continuously stable throughout testing. Conversely, the fracture behavior of a silicon nitride ceramic exhibited crack growth as a series of subcritical extensions which are interrupted by dynamic propagation. Dynamic initiation and arrest fracture resistance measurements for the silicon nitride averaged 67 and 48 J/sq m, respectively. The dynamic initiation event was observed to be sudden and explosive. Increments of subcritical crack growth contributed to a 40 percent increase in fracture resistance before dynamic initiation. Subcritical crack growth visibly marked the fracture surface with an increase in surface roughness. Increments of subcritical crack growth loosen ceramic material near the fracture surface and the fracture debris is easily removed by a replication technique. Fracture debris is viewed as evidence that both crack bridging and subsurface microcracking may be some of the mechanisms contributing to the increase in fracture resistance. A Statistical Fracture Mechanics model specifically developed to address subcritical crack growth and fracture reliability is used together with a damaged zone of material at the crack tip to model experimental results. A Monte Carlo simulation of the actual experiments was used to establish a set of modeling input

  10. Rectifying enhancement induced by conjugation breaking in thiolated arylethynylene single-molecular diodes

    NASA Astrophysics Data System (ADS)

    Zuo, Xi; Chu, Lei; Zhang, Guang-Ping; Wang, Chuan-Kui

    2016-10-01

    Rectifying properties of three cyano side group substituted arylethynylene thiolate molecules are theoretically investigated based on abinitio calculations. The current-voltage curves show that rectifying performance of the junctions correlates negatively with conjugation of the molecules, which reveals a much more pronounced rectification behavior for that with broken-conjugated dihydroanthracene core (sAH) than the counterpart with linearly-conjugated anthracene core (sAC) or cross-conjugated anthraquinone core (sAQ). It is demonstrated that the conjugation breaking induced localization of molecular orbital and asymmetric evolution of its spatial distribution under positive and negative biases play the key role for the rectification enhancement in sAH.

  11. Nicotine at clinically relevant concentrations affects atrial inward rectifier potassium current sensitive to acetylcholine.

    PubMed

    Bébarová, Markéta; Matejovič, Peter; Švecová, Olga; Kula, Roman; Šimurdová, Milena; Šimurda, Jiří

    2017-02-03

    Nicotine abuse is associated with variety of diseases including arrhythmias, most often atrial fibrillation (AF). Altered inward rectifier potassium currents including acetylcholine-sensitive current I K(Ach) are known to be related to AF pathogenesis. Since relevant data are missing, we aimed to investigate I K(Ach) changes at clinically relevant concentrations of nicotine. Experiments were performed by the whole cell patch clamp technique at 23 ± 1 °C on isolated rat atrial myocytes. Nicotine was applied at following concentrations: 4, 40 and 400 nM; ethanol at 20 mM (∼0.09%). Nicotine at 40 and 400 nM significantly activated constitutively active component of I K(Ach) with the maximum effect at 40 nM (an increase by ∼100%); similar effect was observed at -110 and -50 mV. Changes at 4 nM nicotine were negligible on average. Coapplication of 40 nM nicotine and 20 mM ethanol (which is also known to activate this current) did not show cumulative effect. In the case of acetylcholine-induced component of I K(Ach), a dual effect of nicotine and its correlation with the current magnitude in control were apparent: the current was increased by nicotine in the cells showing small current in control and vice versa. The effect of 40 and 400 nM nicotine on acetylcholine-induced component of I K(Ach) was significantly different at -110 and -50 mV. We conclude that nicotine at clinically relevant concentrations significantly increased constitutively active component of I K(Ach) and showed a dual effect on its acetylcholine-induced component, similarly as ethanol. Synchronous application of nicotine and ethanol did not cause additive effect.

  12. Effect of ethanol at clinically relevant concentrations on atrial inward rectifier potassium current sensitive to acetylcholine.

    PubMed

    Bébarová, Markéta; Matejovič, Peter; Pásek, Michal; Hořáková, Zuzana; Hošek, Jan; Šimurdová, Milena; Šimurda, Jiří

    2016-10-01

    Alcohol intoxication tends to induce arrhythmias, most often the atrial fibrillation. To elucidate arrhythmogenic mechanisms related to alcohol consumption, the effect of ethanol on main components of the ionic membrane current is investigated step by step. Considering limited knowledge, we aimed to examine the effect of clinically relevant concentrations of ethanol (0.8-80 mM) on acetylcholine-sensitive inward rectifier potassium current I K(Ach). Experiments were performed by the whole-cell patch clamp technique at 23 ± 1 °C on isolated rat and guinea-pig atrial myocytes, and on expressed human Kir3.1/3.4 channels. Ethanol induced changes of I K(Ach) in the whole range of concentrations applied; the effect was not voltage dependent. The constitutively active component of I K(Ach) was significantly increased by ethanol with the maximum effect (an increase by ∼100 %) between 8 and 20 mM. The changes were comparable in rat and guinea-pig atrial myocytes and also in expressed human Kir3.1/3.4 channels (i.e., structural correlate of I K(Ach)). In the case of the acetylcholine-induced component of I K(Ach), a dual ethanol effect was apparent with a striking heterogeneity of changes in individual cells. The effect correlated with the current magnitude in control: the current was increased by eth-anol in the cells showing small current in control and vice versa. The average effect peaked at 20 mM ethanol (an increase of the current by ∼20 %). Observed changes of action potential duration agreed well with the voltage clamp data. Ethanol significantly affected both components of I K(Ach) even in concentrations corresponding to light alcohol consumption.

  13. Transient thermal analysis of micromachined silicon bridge

    NASA Astrophysics Data System (ADS)

    Yuasa, Hiroyasu; Ohya, Seishiro; Karasawa, Shiro; Kodato, Setsuo; Akimoto, Kenji

    1996-09-01

    We investigate the transient thermal response of micromachined silicon microbridges. The silicon microbridge has a large potential for sensors relating to heat because silicon has large thermal conductivity. The silicon microbridge is stable in heat cycle compared with the other hetero-structures. The silicon process has an advantage of mass production and good controllability. The silicon microbridge is abruptly heated by its Joule's heat when a voltage pulse is applied. The measured time constant was less than 1 ms because the heat capacity of the microbridge is small. A heavily doped silicon layer which is made by ion implantation works as stopping layer for anisotropic etching process. Furthermore the dependence of resistance on temperature is metallic such that the drive current is automatically controlled with negative feedback. We could easily control the temperature of silicon microbridge by electric signal up to the frequency range of 1 kHz. The temperature modulation was more than 700 degree(s)C at 100 Hz. The microbridge is one of the fastest heater driven by Joule's heat because of the small heat capacity and the large thermal conductivity of silicon.

  14. Recovery Act: High-Efficiency, Wideband Three-Phase Rectifiers and Adaptive Rectifier Management for Telecomm Central Office and Large Data Center Applications

    SciTech Connect

    Mark A. Johnson

    2012-06-29

    Lineage Power and Verizon teamed up to address a DOE funding opportunity focused on improving the power conversion chain in telecommunications facilities and data centers. The project had three significant elements: the design and development of high efficiency and high power three-phase rectifiers by Lineage Power, design and development of software to optimize overall plant energy efficiency by Lineage Power, and a field trial in active Verizon telecommunications facilities where energy consumption was measured before and after efficiency upgrades.

  15. Transient microwave bandwidth measurements of illuminated silicon switches for optical pulse-shape control of laser-fusion drivers

    SciTech Connect

    Green, K.; Donaldson, W.R.; Sobolewski, R.; Okishev, A.; Skeldon, M.D.; Letzring, S.; Seka, W.

    1995-12-31

    The microwave transmission properties of a high-purity ({>=}40 k{Omega}{center_dot}cm) single-crystal-silicon, photoconductive (PC) switch were measured while the switch was optically activated. The switch was 2.3 mm wide (the width of the microstrip electrode), 2 mm long, and 0.5 mm thick with a 0.5-mm photoconductive gap and was mounted in a 50-{Omega} microstrip transmission line. The switch was irradiated uniformly with a 150-ns FWHM pulse from a ND:YAG laser (wavelength = 1.064 {micro}m). The insertion loss of the optically activated PC switch was a nearly constant {minus}0.7 dB across the measurement system bandwidth (9 GHz). Under these illumination conditions, the switch exhibited negligible bandwidth limitations. The microstrip structure by itself had an insertion loss that increased from {minus}0.4 dB at 1 GHz to {minus}1.4 dB at 9 GHz.

  16. Controlled translocation of DNA through nanopores in carbon nano-, silicon-nitride- and lipid-coated membranes.

    PubMed

    Sischka, Andy; Galla, Lukas; Meyer, Andreas J; Spiering, Andre; Knust, Sebastian; Mayer, Michael; Hall, Adam R; Beyer, André; Reimann, Peter; Gölzhäuser, Armin; Anselmetti, Dario

    2015-07-21

    We investigated experimentally and theoretically the translocation forces when a charged polymer is threaded through a solid-state nanopore and found distinct dependencies on the nanopore diameter as well as on the nano membrane material chemistry. For this purpose we utilized dedicated optical tweezers force mechanics capable of probing the insertion of negatively charged double-stranded DNA inside a helium-ion drilled nanopore. We found that both the diameter of the nanopore and the membrane material itself have significant influences on the electroosmotic flow through the nanopore and thus on the threading force. Compared to a bare silicon-nitride membrane, the threading of DNA through only 3 nm thin carbon nano membranes as well as lipid bilayer-coated nanopores increased the threading force by 15% or 85%, respectively. This finding was quantitatively described by our recently developed theoretical model that also incorporates hydrodynamic slip effects on the translocating DNA molecule and the force dependence on the membrane thickness. The additional measurements presented in this paper further support our model.

  17. Possible role of azole and echinocandin lock solutions in the control of Candida biofilms associated with silicone.

    PubMed

    Cateau, Estelle; Berjeaud, Jean-Marc; Imbert, Christine

    2011-04-01

    Until now, management of candidiasis related to implanted devices has remained problematic. The aim of this study was to investigate antifungal lock strategies against Candida albicans and Candida glabrata biofilms in vitro. Three antifungal agents were used against eight C. albicans and six C. glabrata clinical strains isolated from infected catheters. Caspofungin and micafungin, both echinocandins, as well as the azole posaconazole were tested. An in vitro model of Candida biofilm on 100% silicone catheters was used. Efficacy of the antifungal lock was tested against biofilms aged 12h and 5 days following exposure to caspofungin (5mg/L and 25mg/L), micafungin (5mg/L and 15 mg/L) and posaconazole (10mg/L) for 12h. Persistence of antibiofilm activity was investigated 1-3 days following drug elimination. Antifungal lock was considered effective in the event of a significant decrease (P<0.001) in the metabolic activity of the biofilm yeast. The results showed that micafungin had significant inhibitory effectiveness against young and mature C. albicans and C. glabrata biofilms. Moreover, this activity appeared to persist for up to 3 days. Caspofungin displayed similar activity against all C. albicans biofilms, but the activity was less persistent for C. glabrata biofilms. Posaconazole was less effective against C. albicans biofilms, but its activity was sustained. Echinocandin lock therapy could significantly enhance the management of candidiasis in patients with indwelling catheters by combating biofilms and enabling device maintenance in situ.

  18. Effect of the fused quartz particle density on nucleation and grain control of high-performance multicrystalline silicon ingots

    NASA Astrophysics Data System (ADS)

    Ding, Junjing; Yu, Yunyang; Chen, Wenliang; Zhou, Xucheng; Wu, Zhiyong; Zhong, Genxiang; Huang, Xinming

    2016-11-01

    The nucleation process of high-performance multicrystalline silicon (HP mc-Si) growth seeded by fused quartz particles (FQP) through directional solidification is crucial for the ingot quality. To determine the optimal density of FQP and obtain a better nucleation process and the grain growth, we cast ingots using four different densities of FQP fixed on the bottom of the four quartz crucibles and covered them with a certain thickness of Si3N4 coating. FQP sizes of 30-50 mesh were used, and the influence of the fused quartz particle density on the nucleation mechanism, initial grain uniformity, grain size, density of dislocation clusters, and cell efficiency were analyzed. Compared with the ingots seeded with other three densities of FQP, the 220 particles/cm2 of FQP seeded ingot showed better uniformity of nucleation and initial grains. A large number of small uniform Si grains with lower density of dislocation clusters in the bottom of the ingot were observed. The average conversion efficiency of p-type solar cells manufactured with the 220 particles/cm2 seeded ingot (18.28%) was 0.19% higher than that manufactured with the 120 particles/cm2 seeded ingot (18.09%).

  19. Versatile control of metal-assisted chemical etching for vertical silicon microwire arrays and their photovoltaic applications

    PubMed Central

    Um, Han-Don; Kim, Namwoo; Lee, Kangmin; Hwang, Inchan; Hoon Seo, Ji; Yu, Young J.; Duane, Peter; Wober, Munib; Seo, Kwanyong

    2015-01-01

    A systematic study was conducted into the use of metal-assisted chemical etching (MacEtch) to fabricate vertical Si microwire arrays, with several models being studied for the efficient redox reaction of reactants with silicon through a metal catalyst by varying such parameters as the thickness and morphology of the metal film. By optimizing the MacEtch conditions, high-quality vertical Si microwires were successfully fabricated with lengths of up to 23.2 μm, which, when applied in a solar cell, achieved a conversion efficiency of up to 13.0%. These solar cells also exhibited an open-circuit voltage of 547.7 mV, a short-circuit current density of 33.2 mA/cm2, and a fill factor of 71.3% by virtue of the enhanced light absorption and effective carrier collection provided by the Si microwires. The use of MacEtch to fabricate high-quality Si microwires therefore presents a unique opportunity to develop cost-effective and highly efficient solar cells. PMID:26060095

  20. Atmospheric pressure plasma induced grafting of poly(ethylene glycol) onto silicone elastomers for controlling biological response.

    PubMed

    D'Sa, Raechelle A; Raj, Jog; McMahon, M Ann S; McDowell, David A; Burke, George A; Meenan, Brian J

    2012-06-01

    This study investigates the role that surface functionalisation of silicone elastomer (SE) by atmospheric pressure plasma induced graft immobilisation of poly(ethylene glycol) methyl ether methacrylate (PEGMA) plays in the attendant biological response. SE is used in modern ophthalmic medical devices and samples of the material were initially plasma treated using a dielectric barrier discharge reactor (DBD) to introduce reactive oxygen functionalities, prior to in situ grafting of two molecular weights of PEGMA (MW 1000 Da: PEGMA(1000), MW 2000 Da: PEGMA(2000)). The variously processed surfaces were characterised by water contact angle analysis, X-ray photoelectron spectroscopy, time-of-flight secondary ion mass spectrometry and atomic force microscopy. Lens epithelial cells were then cultured on the PEGMA grafted SE surfaces. It was found that cells on the pristine surface were not well spread and had shrunken morphology. On the DBD pre-treated surfaces, the cells were well spread. On the PEGMA(1000) surface, the cells displayed evidence of shrinkage and were on the verge of detaching. Remarkably, on the PEGMA(2000) surface, no cell adhesion was detection. Bacterial adhesion to the surfaces was studied using Staphylococcus aureus NTC8325. There was no difference in the number of bacteria adhering to any of the surfaces studied.

  1. Ultrafast laser functionalized rare phased gold-silicon/silicon oxide nanostructured hybrid biomaterials.

    PubMed

    Premnath, P; Tan, B; Venkatakrishnan, K

    2015-12-01

    We introduce a hybrid nanostructured biomaterial that is a combination of rare phases of immiscible gold and silicon oxide, functionalized via ultrafast laser synthesis. For the first time, we show cancer controlling properties of rare phases of gold silicides, which include Au7Si, Au5Si, Au0.7Si2.3 and Au8Si2. Conventionally, pure forms of gold and silicon/silicon oxide are extensively employed in targeted therapy and drug delivery systems due to their unique properties. While silicon and silicon oxide nanoparticles have shown biocompatibility, gold nanoparticles show conflicting results based on their size and material properties. Several studies have shown that gold and silicon combinations produce cell controlling properties, however, these studies were not able to produce a homogenous combination of gold and silicon, owing to its immiscibility. A homogenous combination of gold and silicon may potentially enable properties that have not previously been reported. We describe rare phased gold-silicon oxide nanostructured hybrid biomaterials and its unique cancer controlling properties, owing to material properties, concentration, size and density. The gold-silicon oxide nanostructured hybrid is composed of individual gold-silicon oxide nanoparticles in various concentrations of gold and silicon, some nanoparticles possess a gold-core and silicon-shell like structure. The individual nanoparticles are bonded together forming a three dimensional nanostructured hybrid. The interaction of the nanostructured hybrids with cervical cancer cells showed a 96% reduction in 24h. This engineered nanostructured hybrid biomaterial presents significant potential due to the combination of immiscible gold and silicon oxide in varying phases and can potentially satiate the current vacuum in cancer therapy.

  2. Revealing unobserved factors underlying cortical activity with a rectified latent variable model applied to neural population recordings.

    PubMed

    Whiteway, Matthew R; Butts, Daniel A

    2017-03-01

    The activity of sensory cortical neurons is not only driven by external stimuli but also shaped by other sources of input to the cortex. Unlike external stimuli, these other sources of input are challenging to experimentally control, or even observe, and as a result contribute to variability of neural responses to sensory stimuli. However, such sources of input are likely not "noise" and may play an integral role in sensory cortex function. Here we introduce the rectified latent variable model (RLVM) in order to identify these sources of input using simultaneously recorded cortical neuron populations. The RLVM is novel in that it employs nonnegative (rectified) latent variables and is much less restrictive in the mathematical constraints on solutions because of the use of an autoencoder neural network to initialize model parameters. We show that the RLVM outperforms principal component analysis, factor analysis, and independent component analysis, using simulated data across a range of conditions. We then apply this model to two-photon imaging of hundreds of simultaneously recorded neurons in mouse primary somatosensory cortex during a tactile discrimination task. Across many experiments, the RLVM identifies latent variables related to both the tactile stimulation as well as nonstimulus aspects of the behavioral task, with a majority of activity explained by the latter. These results suggest that properly identifying such latent variables is necessary for a full understanding of sensory cortical function and demonstrate novel methods for leveraging large population recordings to this end.NEW & NOTEWORTHY The rapid development of neural recording technologies presents new opportunities for understanding patterns of activity across neural populations. Here we show how a latent variable model with appropriate nonlinear form can be used to identify sources of input to a neural population and infer their time courses. Furthermore, we demonstrate how these sources are

  3. Bipulsating Technique for Silicon Production

    NASA Technical Reports Server (NTRS)

    Sanjurjo, A.

    1982-01-01

    Method controls reaction temperature and rate of reaction of sodium and silicon tetrafluoride by alternately adding measured amounts of reactants. Technique used in large reactor, where heat dissipation becomes serious problem, to control reactor temperatures. Highly efficient method, which would utilize almost 100 percent of raw materials.

  4. Control of Subthreshold Characteristics of Narrow-Channel Silicon-on-Insulator n-Type Metal-Oxide-Semiconductor Transistor with Additional Side Gate Electrodes

    NASA Astrophysics Data System (ADS)

    Okuyama, Kiyoshi; Yoshikawa, Koji; Sunami, Hideo

    2007-04-01

    A silicon-on-insulator (SOI) n-type metal-oxide-semiconductor (MOS) transistor with additional side gate electrodes is fabricated and its subthreshold characteristics are discussed. Since its device structure provides independent biasing to gates, flexible device-characteristic control for the respective device is expected. The key fabrication process is the formation of transistor gates. Additional side gate electrodes are formed by reactive ion etching (RIE) with a SiO2-covered top gate as an etching mask. Subthreshold characteristics are improved by negative side-gate biasing. In addition, the side-gate voltage VSG required to decrease off-leakage current by one decade is around 100 mV. Since the sidewall oxide thickness is chosen to be 5 nm, which is the same as the top-oxide thickness, rather sensitive subthreshold-characteristic control compared with that of biasing through a thick buried-oxide layer is achieved in response to performance requirement. In the viewpoint of stand-by-power suppression, these provide a certain controllability to a circuit operation.

  5. Silicon Detectors

    NASA Astrophysics Data System (ADS)

    Sadrozinski, Hartmut

    2014-03-01

    The use of silicon detectors has experienced an exponential growth in accelerator and space based experiments, similar to trends in the semiconductor industry as a whole, usually paraphrased as ``Moore's Law.'' Some of the essentials for this phenomenon will be presented, together with examples of the exciting science results which it enabled. With the establishment of a ``semiconductor culture'' in universities and laboratories around the world, an increased understanding of the sensors results in thinner, faster, more radiation-resistant detectors, spawning an amazing wealth of new technologies and applications, which will be the main subject of the presentation.

  6. Silicon Micromachined Microlens Array for THz Antennas

    NASA Technical Reports Server (NTRS)

    Lee, Choonsup; Chattopadhyay, Goutam; Mehdi, IImran; Gill, John J.; Jung-Kubiak, Cecile D.; Llombart, Nuria

    2013-01-01

    5 5 silicon microlens array was developed using a silicon micromachining technique for a silicon-based THz antenna array. The feature of the silicon micromachining technique enables one to microfabricate an unlimited number of microlens arrays at one time with good uniformity on a silicon wafer. This technique will resolve one of the key issues in building a THz camera, which is to integrate antennas in a detector array. The conventional approach of building single-pixel receivers and stacking them to form a multi-pixel receiver is not suited at THz because a single-pixel receiver already has difficulty fitting into mass, volume, and power budgets, especially in space applications. In this proposed technique, one has controllability on both diameter and curvature of a silicon microlens. First of all, the diameter of microlens depends on how thick photoresist one could coat and pattern. So far, the diameter of a 6- mm photoresist microlens with 400 m in height has been successfully microfabricated. Based on current researchers experiences, a diameter larger than 1-cm photoresist microlens array would be feasible. In order to control the curvature of the microlens, the following process variables could be used: 1. Amount of photoresist: It determines the curvature of the photoresist microlens. Since the photoresist lens is transferred onto the silicon substrate, it will directly control the curvature of the silicon microlens. 2. Etching selectivity between photoresist and silicon: The photoresist microlens is formed by thermal reflow. In order to transfer the exact photoresist curvature onto silicon, there needs to be etching selectivity of 1:1 between silicon and photoresist. However, by varying the etching selectivity, one could control the curvature of the silicon microlens. The figure shows the microfabricated silicon microlens 5 x5 array. The diameter of the microlens located in the center is about 2.5 mm. The measured 3-D profile of the microlens surface has a

  7. Broadband terahertz imaging with highly sensitive silicon CMOS detectors.

    PubMed

    Schuster, Franz; Coquillat, Dominique; Videlier, Hadley; Sakowicz, Maciej; Teppe, Frédéric; Dussopt, Laurent; Giffard, Benoît; Skotnicki, Thomas; Knap, Wojciech

    2011-04-11

    This paper investigates terahertz detectors fabricated in a low-cost 130 nm silicon CMOS technology. We show that the detectors consisting of a nMOS field effect transistor as rectifying element and an integrated bow-tie coupling antenna achieve a record responsivity above 5 kV/W and a noise equivalent power below 10 pW/Hz(0.5) in the important atmospheric window around 300 GHz and at room temperature. We demonstrate furthermore that the same detectors are efficient for imaging in a very wide frequency range from ~0.27 THz up to 1.05 THz. These results pave the way towards high sensitivity focal plane arrays in silicon for terahertz imaging.

  8. Effect of rapid delayed rectifier current on hysteresis in restitution of action potential duration in swine.

    PubMed

    Agarwal, Anuj; Jing, Linyuan; Patwardhan, Abhijit

    2012-01-01

    Electrical stability in the heart depends on two important factors; restitution of action potential duration (APD) and memory. Repolarization currents play an important role in determining APD and also affect memory. We determined the effects of blocking the rapid component of the delayed rectifier (I(Kr)) on a quantifiable measure of memory, i.e. hysteresis in restitution of APD, in swine. Transmembrane potentials were recorded from right ventricular endocardial tissues. Two pacing protocols with explicit control of diastolic interval (DI) were used to change DIs in a sequential and sinusoidal pattern to quantify hysteresis in restitution of APD. E-4031 (5 µM/L) was used to block I(Kr). Measures of memory and restitution were quantified by calculating hysteresis loop thickness, area, overall tilt, and maximum and minimum delays between DIs and APDs. Blocking I(Kr) with E-4031 increased the baseline APD, loop thickness, area, and tilt (p<0.05). However, loop thickness did not increase beyond what could be predicted by the increase in baseline APD after block of I(Kr). The substantial change in APD after blocking I(Kr) suggests that this current plays a major role in repolarization in the swine. Loop thickness is a measure of memory, an increase in which is predicted by theory to reduce instability in activation. In our study, the substantial increase in loop thickness could be accounted for by an equally substantial increase in APD and therefore does not necessarily indicate increased memory after blocking I(Kr). Our results also suggest that factors based on restitution and memory need to be considered in the context of operating point, i.e. baseline APD, when they are used to explore mechanisms that affect electrical stability in the heart.

  9. Asymmetric Die Grows Purer Silicon Ribbon

    NASA Technical Reports Server (NTRS)

    Kalejs, J. P.; Chalmers, B.; Surek, T.

    1983-01-01

    Concentration of carbide impurities in silicon ribbon is reduced by growing crystalline ribbon with die one wall higher than other. Height difference controls shape of meniscus at liquid/crystal interface and concentrates silicon carbide impurity near one of broad faces. Opposite face is left with above-average purity. Significantly improves efficiency of solar cells made from ribbon.

  10. Sodium Spray Would Speed Silicon Production

    NASA Technical Reports Server (NTRS)

    Sancier, K. M.

    1983-01-01

    Production rate of solar-grade silicon in sodium/silicon tetrafluoride reactor increase by spray feed. Liquid-sodium droplet size is controlled by pressure of argon gas and by nozzle design. Baffle helps to prevent reactor opening from becoming clogged by reaction products.

  11. Bubble growth within the skin by rectified diffusion might play a significant role in sonophoresis.

    PubMed

    Lavon, Ilana; Grossman, Nili; Kost, Joseph; Kimmel, Eitan; Enden, Giora

    2007-02-12

    Low frequency ultrasound has successfully been used for enhancing transdermal transport of a variety of different molecules. This phenomenon is referred to as sonophoresis. Several attempts have been made to investigate the enhancing mechanism in order to modulate the overall process. In this study we assess whether rectified diffusion is a process that occurs within the skin, which could eventually lead to channeling and thereby to transdermal sonophoresis. The model presented in this paper is based on the following postulate: gas bubbles are randomly distributed within the lipid bilayers of the stratum corneum (SC). As the skin is subjected to ultrasound, gas bubbles grow by rectified diffusion. During this period, bubbles may merge with the outer or inner boundaries of the SC, or merge with neighboring bubbles. Eventually, channels are created, allowing drugs to easily penetrate through the most significant barrier to transdermal delivery, the SC. As a result, transdermal transport rate is enhanced. In this work, a mathematical model has been formulated, in which permeability enhancement of the SC is linked to channels, possibly created by means of rectified diffusion. Sonophoresis may result from various mechanisms that act in synergy. The present model predicts that rectified diffusion might be one of the factors that lead to sonophoresis during ultrasound treatment.

  12. CMOS-Compatible Room-Temperature Rectifier Toward Terahertz Radiation Detection

    NASA Astrophysics Data System (ADS)

    Varlamava, Volha; De Amicis, Giovanni; Del Monte, Andrea; Perticaroli, Stefano; Rao, Rosario; Palma, Fabrizio

    2016-08-01

    In this paper, we present a new rectifying device, compatible with the technology of CMOS image sensors, suitable for implementing a direct-conversion detector operating at room temperature for operation at up to terahertz frequencies. The rectifying device can be obtained by introducing some simple modifications of the charge-storage well in conventional CMOS integrated circuits, making the proposed solution easy to integrate with the existing imaging systems. The rectifying device is combined with the different elements of the detector, composed of a 3D high-performance antenna and a charge-storage well. In particular, its position just below the edge of the 3D antenna takes maximum advantage of the high electric field concentrated by the antenna itself. In addition, the proposed structure ensures the integrity of the charge-storage well of the detector. In the structure, it is not necessary to use very scaled and costly technological nodes, since the CMOS transistor only provides the necessary integrated readout electronics. On-wafer measurements of RF characteristics of the designed junction are reported and discussed. The overall performances of the entire detector in terms of noise equivalent power (NEP) are evaluated by combining low-frequency measurements of the rectifier with numerical simulations of the 3D antenna and the semiconductor structure at 1 THz, allowing prediction of the achievable NEP.

  13. Rectified images of selected geologic maps in the Northern Rockies Area, Idaho, Montana, Washington, and Wyoming

    USGS Publications Warehouse

    Larsen, Jeremy C.; Assmus, Kenneth C.; Causey, J. Douglas; Zientek, Michael L.

    2004-01-01

    Selected geologic maps covering parts of the Northern Rocky Mountains and adjacent areas were converted to raster images and georeferenced (rectified) for use in a geographic information system (GIS). These rectified images were created for the purpose of visually comparing published geologic maps with other geospatial information. However, they cannot be queried or used for spatial analysis thus limiting their use in a GIS. The 42 georeferenced images included in this report range in scale from 1:250,000 to 1:100,000.Tagged Image Format (TIFF) images of the maps were generated by scanning an original paper map or converting previously published Portable Document Format (PDF) images or Encapsulated Post-Script (EPS) files. To reduce file size and minimize image overlap, the TIFF images were cropped, and then rectified using ArcMap? 8 and converted to MrSID? images. Information in the explanation and cross sections can be viewed in un-rectified images of the original publications that are included with this report. In addition, the text in the map unit description along with the unit name, map label, and a citation are organized in a searchable PDF file.

  14. Hybrid solar cells with conducting polymers and vertically aligned silicon nanowire arrays: The effect of silicon conductivity

    NASA Astrophysics Data System (ADS)

    Woo, Sungho; Hoon Jeong, Jae; Kun Lyu, Hong; Jeong, Seonju; Hyoung Sim, Jun; Hyun Kim, Wook; Soo Han, Yoon; Kim, Youngkyoo

    2012-08-01

    Organic/inorganic hybrid solar cells, based on vertically aligned n-type silicon nanowires (n-Si NWs) and p-type conducting polymers (PEDOT:PSS), were investigated as a function of Si conductivity. The n-Si NWs were easily prepared from the n-Si wafer by employing a silver nanodot-mediated micro-electrochemical redox reaction. This investigation shows that the photocurrent-to-voltage characteristics of the n-Si NW/PEDOT:PSS cells clearly exhibit a stable rectifying diode behavior. The increase in current density and fill factor using high conductive silicon is attributed to an improved charge transport towards the electrodes achieved by lowering the device's series resistance. Our results also show that the surface area of the nanowire that can form heterojunction domains significantly influences the device performance.

  15. Microfluidic assembly of monodisperse multistage pH-responsive polymer/porous silicon composites for precisely controlled multi-drug delivery.

    PubMed

    Liu, Dongfei; Zhang, Hongbo; Herranz-Blanco, Bárbara; Mäkilä, Ermei; Lehto, Vesa-Pekka; Salonen, Jarno; Hirvonen, Jouni; Santos, Hélder A

    2014-05-28

    We report an advanced drug delivery platform for combination chemotherapy by concurrently incorporating two different drugs into microcompoistes with ratiometric control over the loading degree. Atorvastatin and celecoxib were selected as model drugs due to their different physicochemical properties and synergetic effect on colorectal cancer prevention and inhibition. To be effective in colorectal cancer prevention and inhibition, the produced microcomposite contained hypromellose acetate succinate, which is insoluble in acidic conditions but highly dissolving at neutral or alkaline pH conditions. Taking advantage of the large pore volume of porous silicon (PSi), atorvastatin was firstly loaded into the PSi matrix, and then encapsulated into the pH-responsive polymer microparticles containing celecoxib by microfluidics in order to obtain multi-drug loaded polymer/PSi microcomposites. The prepared microcomposites showed monodisperse size distribution, multistage pH-response, precise ratiometric controlled loading degree towards the simultaneously loaded drug molecules, and tailored release kinetics of the loaded cargos. This attractive microcomposite platform protects the payloads from being released at low pH-values, and enhances their release at higher pH-values, which can be further used for colon cancer prevention and treatment. Overall, the pH-responsive polymer/PSi-based microcomposite can be used as a universal platform for the delivery of different drug molecules for combination therapy.

  16. Control of optical bandgap energy and optical absorption coefficient by geometric parameters in sub-10 nm silicon-nanodisc array structure

    NASA Astrophysics Data System (ADS)

    Fairuz Budiman, Mohd; Hu, Weiguo; Igarashi, Makoto; Tsukamoto, Rikako; Isoda, Taiga; Itoh, Kohei M.; Yamashita, Ichiro; Murayama, Akihiro; Okada, Yoshitaka; Samukawa, Seiji

    2012-02-01

    A sub-10 nm, high-density, periodic silicon-nanodisc (Si-ND) array has been fabricated using a new top-down process, which involves a 2D array bio-template etching mask made of Listeria-Dps with a 4.5 nm diameter iron oxide core and damage-free neutral-beam etching (Si-ND diameter: 6.4 nm). An Si-ND array with an SiO2 matrix demonstrated more controllable optical bandgap energy due to the fine tunability of the Si-ND thickness and diameter. Unlike the case of shrinking Si-ND thickness, the case of shrinking Si-ND diameter simultaneously increased the optical absorption coefficient and the optical bandgap energy. The optical absorption coefficient became higher due to the decrease in the center-to-center distance of NDs to enhance wavefunction coupling. This means that our 6 nm diameter Si-ND structure can satisfy the strict requirements of optical bandgap energy control and high absorption coefficient for achieving realistic Si quantum dot solar cells.

  17. Photo-EMF sensitivity of porous silicon thin layer-crystalline silicon heterojunction to ammonia adsorption.

    PubMed

    Vashpanov, Yuriy; Jung, Jae Il; Kwack, Kae Dal

    2011-01-01

    A new method of using photo-electromotive force in detecting gas and controlling sensitivity is proposed. Photo-electromotive force on the heterojunction between porous silicon thin layer and crystalline silicon wafer depends on the concentration of ammonia in the measurement chamber. A porous silicon thin layer was formed by electrochemical etching on p-type silicon wafer. A gas and light transparent electrical contact was manufactured to this porous layer. Photo-EMF sensitivity corresponding to ammonia concentration in the range from 10 ppm to 1,000 ppm can be maximized by controlling the intensity of illumination light.

  18. Silicon photonics manufacturing.

    PubMed

    Zortman, William A; Trotter, Douglas C; Watts, Michael R

    2010-11-08

    Most demonstrations in silicon photonics are done with single devices that are targeted for use in future systems. One of the costs of operating multiple devices concurrently on a chip in a system application is the power needed to properly space resonant device frequencies on a system's frequency grid. We asses this power requirement by quantifying the source and impact of process induced resonant frequency variation for microdisk resonators across individual die, entire wafers and wafer lots for separate process runs. Additionally we introduce a new technique, utilizing the Transverse Electric (TE) and Transverse Magnetic (TM) modes in microdisks, to extract thickness and width variations across wafers and dice. Through our analysis we find that a standard six inch Silicon on Insulator (SOI) 0.35 μm process controls microdisk resonant frequencies for the TE fundamental resonances to within 1 THz across a wafer and 105 GHz within a single die. Based on demonstrated thermal tuner technology, a stable manufacturing process exhibiting this level of variation can limit the resonance trimming power per resonant device to 231 μW. Taken in conjunction with the power to compensate for thermal environmental variations, the expected power requirement to compensate for fabrication-induced non-uniformities is 17% of that total. This leads to the prediction that thermal tuning efficiency is likely to have the most dominant impact on the overall power budget of silicon photonics resonator technology.

  19. Large area silicon sheet by EFG

    NASA Technical Reports Server (NTRS)

    1977-01-01

    Some hypotheses to explain both of these features are advanced and the possible implications for solar cell performance are touched upon. The multiple ribbon growth system has shown a number of flaws with respect to the reliability of the basic furnace design. These definitely need to be rectified before any significant demonstration of multiple ribbon growth can proceed. The cartridges, however, have performed quite well. The work on 3" cartridge design and automatic controls has proceeded nearly on schedule and the report contains a detailed description of the approach and the equipment to be used for automatic control of ribbon growth.

  20. Special power supply and control system for the gas-cooled fast reactor-core flow test loop

    SciTech Connect

    Hudson, T.L.

    1981-09-01

    The test bundle in the Gas-Cooled Fast Reactor-Core Flow Test Loop (GCFR-CFTL) requires a source of electrical power that can be controlled accurately and reliably over a wide range of steady-state and transient power levels and skewed power distributions to simulate GCFR operating conditions. Both ac and dc power systems were studied, and only those employing silicon-controlled rectifiers (SCRs) could meet the requirements. This report summarizes the studies, tests, evaluations, and development work leading to the selection. it also presents the design, procurement, testing, and evaluation of the first 500-kVa LMPL supply. The results show that the LMPL can control 60-Hz sine wave power from 200 W to 500 kVA.

  1. Silicon carbide

    SciTech Connect

    Ault, N.N.; Crowe, J.T. )

    1991-05-01

    This paper reports that, since silicon carbide (SiC) does not occur in nature, it must be synthesized by a high-temperature chemical reaction. The first commercial production began at the end of the 19th century when Acheson developed a process of reacting sand and coke in a resistance furnace. This process is still the basic SiC manufacturing process used today. High-quality silica sand (99.5% SiO{sub 2}), low-sulfur petroleum coke, and electricity (23.8 MJ/kg) are the major ingredients in the production of SiC. The reaction takes place in a trough-like furnace with a removable refractory side (or some similar configuration) and with permanent refractory ends holding carbon electrodes. When the furnace is started, the carbon electrodes are joined by the graphite core laid the length of the furnace near the center of the mixture which fills the furnace.

  2. Thin silicon solar cells

    SciTech Connect

    Hall, R.B.; Bacon, C.; DiReda, V.; Ford, D.H.; Ingram, A.E.; Cotter, J.; Hughes-Lampros, T.; Rand, J.A.; Ruffins, T.R.; Barnett, A.M.

    1992-12-01

    The silicon-film design achieves high performance by using a dun silicon layer and incorporating light trapping. Optimally designed thin crystalline solar cells (<50 microns thick) have performance advantages over conventional thick devices. The high-performance silicon-film design employs a metallurgical barrier between the low-cost substrate and the thin silicon layer. Light trapping properties of silicon-film on ceramic solar cells are presented and analyzed. Recent advances in process development are described here.

  3. Buried oxide layer in silicon

    DOEpatents

    Sadana, Devendra Kumar; Holland, Orin Wayne

    2001-01-01

    A process for forming Silicon-On-Insulator is described incorporating the steps of ion implantation of oxygen into a silicon substrate at elevated temperature, ion implanting oxygen at a temperature below 200.degree. C. at a lower dose to form an amorphous silicon layer, and annealing steps to form a mixture of defective single crystal silicon and polycrystalline silicon or polycrystalline silicon alone and then silicon oxide from the amorphous silicon layer to form a continuous silicon oxide layer below the surface of the silicon substrate to provide an isolated superficial layer of silicon. The invention overcomes the problem of buried isolated islands of silicon oxide forming a discontinuous buried oxide layer.

  4. Use of silicon-versus-layout verification (SiVL) in process control of wafer lithography and mask-making metrology

    NASA Astrophysics Data System (ADS)

    van Adrichem, Paul J. M.; Driessen, Frank A. J. M.; van Hasselt, Kees

    2003-05-01

    The latest generations of CMOS are being patterned at decreasing k1 values, which is one of the reasons that their process windows are decreasing. Hence, control of the process gets more and more important and in-die critical dimension (CD) measurements are gradually being introduced for the monitoring of the in-line lithographic process performance. Because an increasingly large portion of the CD-error-budget is already being consumed by the mask-making, there is also a strong tendency toward improving process control of the mask, which in turn leads to a rapid increase in the number of mask-CD measurements even within the die. The main two reasons for the larger contribution of the mask to the error budget at wafer level are: 1) the mask process itself, and 2) the mask-error enhancement factor (MEEF), the magnification factor of reticle-to-wafer error. The latter factor and its lithographic process dependence are very much depending on the shape of a feature and its local vicinity. For example a narrow dense binary line has a larger MEEF than an isolated line and its partial derivative to defocus is much larger. Hence it would make sense to relate such MEEF process-behaviour to the 2D layout shapes in the design and use that as a metric during mask qualification. In this work the Silicon-versus-layout verification (SiVL) tool- inherently an OPC evaluation tool- is used to find such features in the layout that will be most critical for the wafer lithographic process by automatic extraction and selection of their MEEF values. This information can then be used to generate realistic mask specifications and forms a cost-method to control both mask quality and price.

  5. Silicon Web Process Development

    NASA Technical Reports Server (NTRS)

    Duncan, C. S.; Seidensticker, R. G.; Hopkins, R. H.; Mchugh, J. P.; Hill, F. E.; Heimlich, M. E.; Driggers, J. M.

    1978-01-01

    Progress in the development of techniques to grow silicon web at 25 wq cm/min output rate is reported. Feasibility of web growth with simultaneous melt replenishment is discussed. Other factors covered include: (1) tests of aftertrimmers to improve web width; (2) evaluation of growth lid designs to raise speed and output rate; (3) tests of melt replenishment hardware; and (4) investigation of directed gas flow systems to control unwanted oxide deposition in the system and to improve convective cooling of the web. Compatibility with sufficient solar cell performance is emphasized.

  6. Precise control of photoluminescence of silicon-vacancy color centers in homoepitaxial single-crystal diamond: evaluation of efficiency of Si doping from gas phase

    NASA Astrophysics Data System (ADS)

    Ralchenko, Victor; Sedov, Vadim; Saraykin, Vladimir; Bolshakov, Andrey; Zavedeev, Evgeny; Ashkinazi, Evgeny; Khomich, Andrew

    2016-09-01

    Ability to precisely control the Si-related color center abundance in diamond is important for the use of silicon-vacancy (SiV) defects with bright photoluminescence (PL) in quantum information technologies and optical biomarkers. Here, we evaluated the efficiency of Si incorporation in (100) plane of homoepitaxial diamond layers upon in situ doping by adding silane SiH4 in the course of diamond chemical vapor deposition in microwave plasma using CH4-H2 mixtures. Both the Si concentration in the doped samples, as determined by secondary ion mass spectrometry, and PL intensity of SiV centers at 738 nm wavelength, measured at excitation wavelength of 473 nm, demonstrate a linear increase with silane content in feed gas in the range. The incorporation efficiency f, defined as the ratio of Si concentration in diamond to that in gas, f = [Si/C]dia/[Si/C]gas is found to be (1.1 ± 0.5) × 10-3 for the silane concentrations explored, [SiH4/CH4] < 0.7 %; thus, the Si atoms are accommodated in (100) diamond face easier than nitrogen and phosphorus, but more difficult than boron. This finding allows a tailoring of the Si content and photoluminescence intensity of SiV centers in in situ doped CVD diamond.

  7. Colloidal characterization of silicon nitride and silicon carbide

    NASA Technical Reports Server (NTRS)

    Feke, Donald L.

    1986-01-01

    The colloidal behavior of aqueous ceramic slips strongly affects the forming and sintering behavior and the ultimate mechanical strength of the final ceramic product. The colloidal behavior of these materials, which is dominated by electrical interactions between the particles, is complex due to the strong interaction of the solids with the processing fluids. A surface titration methodology, modified to account for this interaction, was developed and used to provide fundamental insights into the interfacial chemistry of these systems. Various powder pretreatment strategies were explored to differentiate between true surface chemistry and artifacts due to exposure history. The colloidal behavior of both silicon nitride and carbide is dominated by silanol groups on the powder surfaces. However, the colloid chemistry of silicon nitride is apparently influenced by an additional amine group. With the proper powder treatments, silicon nitride and carbide powder can be made to appear colloidally equivalent. The impact of these results on processing control will be discussed.

  8. Purified silicon production system

    DOEpatents

    Wang, Tihu; Ciszek, Theodore F.

    2004-03-30

    Method and apparatus for producing purified bulk silicon from highly impure metallurgical-grade silicon source material at atmospheric pressure. Method involves: (1) initially reacting iodine and metallurgical-grade silicon to create silicon tetraiodide and impurity iodide byproducts in a cold-wall reactor chamber; (2) isolating silicon tetraiodide from the impurity iodide byproducts and purifying it by distillation in a distillation chamber; and (3) transferring the purified silicon tetraiodide back to the cold-wall reactor chamber, reacting it with additional iodine and metallurgical-grade silicon to produce silicon diiodide and depositing the silicon diiodide onto a substrate within the cold-wall reactor chamber. The two chambers are at atmospheric pressure and the system is open to allow the introduction of additional source material and to remove and replace finished substrates.

  9. Morphology-controlled synthesis of silver nanoparticles on the silicon substrate by a facile silver mirror reaction

    NASA Astrophysics Data System (ADS)

    Jiang, Bing; Li, Meicheng; Bai, Fan; Yu, Hang; Mwenya, Trevor; Li, Yingfeng; Song, Dandan

    2013-03-01

    The Ag nanoparticles (Ag-NPs) with different morphology were quickly deposited on p-type Si substrate by a facile silver mirror reaction without capping agents and morphology driving seeds at room temperature. By controlling the concentrations of [Ag(NH3)2]+ and reducing agent (glucose), short rod and quasi-round Ag-NPs were produced on Si substrate. The results show that the shape of the Ag-NPs was defined by [Ag(NH3)2]+ concentration. The concentration of glucose affected the coverage fraction instead of shape of Ag-NPs. Under the high concentrations of [Ag(NH3)2]+, anisotropic crystal structure of short rod Ag-NPs were ascribed to total energy minimization. The high glucose concentration led to agglomeration of particles. Different nanoporous structures on Si substrate etched by using Ag-NPs enable control over its properties and are useful for the solar cells applications.

  10. Facile synthesis of silicon nitride nanowires with flexible mechanical properties and with diameters controlled by flow rate

    PubMed Central

    Dong, Shun; Hu, Ping; Zhang, Xinghong; Cheng, Yuan; Fang, Cheng; Xu, Jianguo; Chen, Guiqing

    2017-01-01

    Ultralong Si3N4 nanowires (NWs) were successfully synthesized with size controlled in N2 gas by using an efficient method. The diameters of the Si3N4 NWs increased when the flow rate of N2 gas increased, with average diameters of 290 nm from flow rates of 100 ml/min, 343 nm from flow rates of 200 ml/min and 425 nm from flow rates of 400 ml/min. Young’s modulus was found to rely strongly on the diameters of the Si3N4 NWs, decreasing from approximately 526.0 GPa to 321.9 GPa; as the diameters increased from 360 nm to 960 nm. These findings provide a promising method for tailoring these mechanical properties of the NWs in a controlled manner over a wide range of Young’s modulus values. Vapour-liquid-solid (VLS) mechanisms were used to model the growth of Si3N4 NWs on the inner wall of an alumina crucible and on the surface of the powder mixture. Alumina may be an effective mediator of NW growth that plays an important role in controlling the concentrations of Si-containing reactants to support the growth of NWs on the inner wall of the alumina crucible. This approach offers a valuable means for preparing ultralong Si3N4 NWs doped with Al with unique properties. PMID:28349956

  11. Facile synthesis of silicon nitride nanowires with flexible mechanical properties and with diameters controlled by flow rate.

    PubMed

    Dong, Shun; Hu, Ping; Zhang, Xinghong; Cheng, Yuan; Fang, Cheng; Xu, Jianguo; Chen, Guiqing

    2017-03-28

    Ultralong Si3N4 nanowires (NWs) were successfully synthesized with size controlled in N2 gas by using an efficient method. The diameters of the Si3N4 NWs increased when the flow rate of N2 gas increased, with average diameters of 290 nm from flow rates of 100 ml/min, 343 nm from flow rates of 200 ml/min and 425 nm from flow rates of 400 ml/min. Young's modulus was found to rely strongly on the diameters of the Si3N4 NWs, decreasing from approximately 526.0 GPa to 321.9 GPa; as the diameters increased from 360 nm to 960 nm. These findings provide a promising method for tailoring these mechanical properties of the NWs in a controlled manner over a wide range of Young's modulus values. Vapour-liquid-solid (VLS) mechanisms were used to model the growth of Si3N4 NWs on the inner wall of an alumina crucible and on the surface of the powder mixture. Alumina may be an effective mediator of NW growth that plays an important role in controlling the concentrations of Si-containing reactants to support the growth of NWs on the inner wall of the alumina crucible. This approach offers a valuable means for preparing ultralong Si3N4 NWs doped with Al with unique properties.

  12. Silicon-micromachined microchannel plates

    NASA Astrophysics Data System (ADS)

    Beetz, Charles P.; Boerstler, Robert; Steinbeck, John; Lemieux, Bryan; Winn, David R.

    2000-03-01

    Microchannel plates (MCP) fabricated from standard silicon wafer substrates using a novel silicon micromachining process, together with standard silicon photolithographic process steps, are described. The resulting SiMCP microchannels have dimensions of ˜0.5 to ˜25 μm, with aspect ratios up to 300, and have the dimensional precision and absence of interstitial defects characteristic of photolithographic processing, compatible with positional matching to silicon electronics readouts. The open channel areal fraction and detection efficiency may exceed 90% on plates up to 300 mm in diameter. The resulting silicon substrates can be converted entirely to amorphous quartz (qMCP). The strip resistance and secondary emission are developed by controlled depositions of thin films, at temperatures up to 1200°C, also compatible with high-temperture brazing, and can be essentially hydrogen, water and radionuclide-free. Novel secondary emitters and cesiated photocathodes can be high-temperature deposited or nucleated in the channels or the first strike surface. Results on resistivity, secondary emission and gain are presented.

  13. Long-term stability of neural prosthetic control signals from silicon cortical arrays in rhesus macaque motor cortex

    NASA Astrophysics Data System (ADS)

    Chestek, Cynthia A.; Gilja, Vikash; Nuyujukian, Paul; Foster, Justin D.; Fan, Joline M.; Kaufman, Matthew T.; Churchland, Mark M.; Rivera-Alvidrez, Zuley; Cunningham, John P.; Ryu, Stephen I.; Shenoy, Krishna V.

    2011-08-01

    Cortically-controlled prosthetic systems aim to help disabled patients by translating neural signals from the brain into control signals for guiding prosthetic devices. Recent reports have demonstrated reasonably high levels of performance and control of computer cursors and prosthetic limbs, but to achieve true clinical viability, the long-term operation of these systems must be better understood. In particular, the quality and stability of the electrically-recorded neural signals require further characterization. Here, we quantify action potential changes and offline neural decoder performance over 382 days of recording from four intracortical arrays in three animals. Action potential amplitude decreased by 2.4% per month on average over the course of 9.4, 10.4, and 31.7 months in three animals. During most time periods, decoder performance was not well correlated with action potential amplitude (p > 0.05 for three of four arrays). In two arrays from one animal, action potential amplitude declined by an average of 37% over the first 2 months after implant. However, when using simple threshold-crossing events rather than well-isolated action potentials, no corresponding performance loss was observed during this time using an offline decoder. One of these arrays was effectively used for online prosthetic experiments over the following year. Substantial short-term variations in waveforms were quantified using a wireless system for contiguous recording in one animal, and compared within and between days for all three animals. Overall, this study suggests that action potential amplitude declines more slowly than previously supposed, and performance can be maintained over the course of multiple years when decoding from threshold-crossing events rather than isolated action potentials. This suggests that neural prosthetic systems may provide high performance over multiple years in human clinical trials.

  14. Thermal Conductivity of Size-Controlled Bulk Silicon Nanocrystals Using Self-Limiting Oxidation and HF Etching

    NASA Astrophysics Data System (ADS)

    Suzuki, Takayuki; Ohishi, Yuji; Kurosaki, Ken; Muta, Hiroaki; Yamanaka, Shinsuke

    2012-08-01

    We propose a new method of obtaining low thermal conductivity in bulk Si. In this method, which we call “HF-etching nanosize-controlling process for powder” (HNPP), self-limiting oxidation coupled with HF etching is applied to nanopowder Si. The application of HNPP to nanopowder Si reduces the average diameter from 58 to 35 nm. The thermal conductivity is reduced from 25.7 to 13.5 W m-1 K-1 at 300 K. Theoretical calculation including grain boundary transmission and frequency-dependent grain boundary scattering shows that these thermal conductivity reductions can be attributed to phonon scattering at grain boundaries.

  15. Breast Implants: Saline vs. Silicone

    MedlinePlus

    ... to women of any age for breast reconstruction. Silicone breast implants Silicone implants are pre-filled with ... likely be inserted at the same time. Ruptured silicone implant If a silicone breast implant ruptures, you ...

  16. High performance ripple feedback for the buck unity-power-factor rectifier

    SciTech Connect

    Lo, Y.W.; King, R.J.

    1995-03-01

    The buck unity-power-factor rectifier has harmonic-free input current with complete load regulation down to zero output voltage. A new ``nonlinear ripple feedback`` is proposed which exactly cancels the spoiling effect of dc-side current ripple on the low-distortion ac line current waveforms, even for large amounts of ripple. This cancellation is independent of operating point and readily implemented with analog hardware, thereby permitting economies in the design of the dc filter while maintaining harmonic-free operation. Both large-signal and incremental analyses of the rectifier are given. Confirming experimental results from a 1-kW 48-V isolated battery charger operating with current-ripple levels ranging from 50% to discontinuous-conduction-mode operation are given.

  17. Rectifying barrier at GaN/SiC hetero-junction studied with positron annihilation spectroscopy

    NASA Astrophysics Data System (ADS)

    Hu, Yi-Fan; Beling, D. C.

    2005-11-01

    Positron annihilation spectroscopy on GaN films grown on SiC substrate with MBE are presented. It is shown that the GaN/SiC interface is rectifying towards positrons, such that positrons can only travel from SiC to GaN and not vice versa. Potential steps seen by the positron at the GaN/SiC interface are calculated from experimental values of electron and positron work function. This ``rectifying'' effect has been successfully mimicked by inserting a thin region of very high electric field in the Variable Energy Positron Fit (VEPF) analysis. The built-in electric field is attributed to different positron affinities, dislocation and/or interface defects at the GaN/SiC interface.

  18. Hydrogen peroxide treatment induced rectifying behavior of Au /n-ZnO contact

    NASA Astrophysics Data System (ADS)

    Gu, Q. L.; Ling, C. C.; Chen, X. D.; Cheng, C. K.; Ng, A. M. C.; Beling, C. D.; Fung, S.; Djurišić, A. B.; Lu, L. W.; Brauer, G.; Ong, H. C.

    2007-03-01

    Conversion of the Au /n-ZnO contact from Ohmic to rectifying with H2O2 pretreatment was studied systematically using I-V measurements, x-ray photoemission spectroscopy, positron annihilation spectroscopy, and deep level transient spectroscopy. H2O2 treatment did not affect the carbon surface contamination or the EC-0.31eV deep level, but it resulted in a significant decrease of the surface OH contamination and the formation of vacancy-type defects (Zn vacancy or vacancy cluster) close to the surface. The formation of a rectifying contact can be attributed to the reduced conductivity of the surface region due to the removal of OH and the formation of vacancy-type defects.

  19. Characterization of inward-rectifier K+ channel inhibition by antiarrhythmic piperazine.

    PubMed

    Xu, Yanping; Lu, Zhe

    2004-12-14

    Strong inward-rectifier K(+) (Kir) channels play a significant role in shaping the cardiac action potential: they help produce its long plateau and accelerate its rate of repolarization. Consequently, genetic deletion of the gene encoding the strongly rectifying K(+) channel IRK1 (Kir2.1) prolongs the cardiac action potential in mice. In principle, broadening the action potential lengthens the refractory period, which may in turn be antiarrhythmogenic. Interestingly, previous studies showed that piperazine, an inexpensive and safe anthelmintic, both inhibits IRK1 channels and is antiarrhythmic in some animal preparations. This potential pharmacological benefit motivated us to further characterize the energetic, kinetic, and molecular properties of IRK1 inhibition by piperazine. We show how its blocking characteristics, in particular, its shallow voltage dependence, allow piperazine to be effective even in the presence of high-affinity polyamine blockers. We also examine the channel selectivity of piperazine and its molecular determinants.

  20. A High Power Density Single-Phase PWM Rectifier With Active Ripple Energy Storage

    SciTech Connect

    Wang, Ruxi; Wang, Fei; Boroyevich, Dushan; Burgos, Rolando; Lai, Rixin; Ning, Puqi; Rajashekara, Kaushik

    2011-01-01

    It is well known that single-phase pulse width modulation rectifiers have second-order harmonic currents and corresponding ripple voltages on the dc bus. The low-frequency harmonic current is normally filtered using a bulk capacitor in the bus, which results in low power density. However, pursuing high power density in converter design is a very important goal in the aerospace applications. This paper studies methods for reducing the energy storage capacitor for single-phase rectifiers. The minimum ripple energy storage requirement is derived independently of a specific topology. Based on theminimum ripple energy requirement, the feasibility of the active capacitor s reduction schemes is verified. Then, we propose a bidirectional buck boost converter as the ripple energy storage circuit, which can effectively reduce the energy storage capacitance. The analysis and design are validated by simulation and experimental results.

  1. Aviram-Ratner rectifying mechanism for DNA base-pair sequencing through graphene nanogaps

    NASA Astrophysics Data System (ADS)

    Agapito, Luis A.; Gayles, Jacob; Wolowiec, Christian; Kioussis, Nicholas

    2012-04-01

    We demonstrate that biological molecules such as Watson-Crick DNA base pairs can behave as biological Aviram-Ratner electrical rectifiers because of the spatial separation and weak hydrogen bonding between the nucleobases. We have performed a parallel computational implementation of the ab initio non-equilibrium Green’s function (NEGF) theory to determine the electrical response of graphene—base-pair—graphene junctions. The results show an asymmetric (rectifying) current-voltage response for the cytosine-guanine base pair adsorbed on a graphene nanogap. In sharp contrast we find a symmetric response for the thymine-adenine case. We propose applying the asymmetry of the current-voltage response as a sensing criterion to the technological challenge of rapid DNA sequencing via graphene nanogaps.

  2. Analysis of UHF RFID CMOS rectifier structures and input impedance characteristics

    NASA Astrophysics Data System (ADS)

    Jamali, Behnam; Ranasinghe, Damith C.; Cole, Peter H.

    2005-12-01

    Passive radio frequency identification (RFID) systems deployment efforts are revolutionizing supply chain logistics by providing unprecedented supply chain visibility. The widely used bandwidth of operation in modern systems is the UHF ISM (industrial, scientific, and medical) band. The performance of UHF RFID systems are largely reliant on low power CMOS circuits, efficient power rectification and the ability of RFID label antennas to match to the input impedance of the RFID label IC. This paper examines a new rectifying structure and considers it for its merits in RFID applications while analysing contribution of the rectifying structure to the input impedance of RFID chips as this is an important consideration in impedance matching to an external antenna.

  3. Low-temperature linear thermal rectifiers based on Coriolis forces.

    PubMed

    Suwunnarat, Suwun; Li, Huanan; Fleischmann, Ragnar; Kottos, Tsampikos

    2016-04-01

    We demonstrate that a three-terminal harmonic symmetric chain in the presence of a Coriolis force, produced by a rotating platform that is used to place the chain, can produce thermal rectification. The direction of heat flow is reconfigurable and controlled by the angular velocity Ω of the rotating platform. A simple three-terminal triangular lattice is used to demonstrate the proposed principle.

  4. Silicon quantum dots for biological applications.

    PubMed

    Chinnathambi, Shanmugavel; Chen, Song; Ganesan, Singaravelu; Hanagata, Nobutaka

    2014-01-01

    Semiconductor nanoparticles (or quantum dots, QDs) exhibit unique optical and electronic properties such as size-controlled fluorescence, high quantum yields, and stability against photobleaching. These properties allow QDs to be used as optical labels for multiplexed imaging and in drug delivery detection systems. Luminescent silicon QDs and surface-modified silicon QDs have also been developed as potential minimally toxic fluorescent probes for bioapplications. Silicon, a well-known power electronic semiconductor material, is considered an extremely biocompatible material, in particular with respect to blood. This review article summarizes existing knowledge related to and recent research progress made in the methods for synthesizing silicon QDs, as well as their optical properties and surface-modification processes. In addition, drug delivery systems and in vitro and in vivo imaging applications that use silicon QDs are also discussed.

  5. The terrestrial magnetosphere: a half-wave rectifier of the interplanetary electric field.

    PubMed

    Burton, R K; McPherron, R L; Russell, C T

    1975-08-29

    A study of geomagnetic disturbances during 1967 and 1968, for which in situ solar wind observations are available, reveals that the magnetosphere acts as a half-wave rectifier of the interplanetary electric field. The rate of injection of energy into the magnetosphere, as inferred from the strength of the disturbance, is approximately linearly proportional to the component of the electric field from dawn to dusk but is effectively zero if the electricfield has a component from dusk to dawn.

  6. Low cost, p-ZnO/n-Si, rectifying, nano heterojunction diode: Fabrication and electrical characterization.

    PubMed

    Kabra, Vinay; Aamir, Lubna; Malik, M M

    2014-01-01

    A low cost, highly rectifying, nano heterojunction (p-ZnO/n-Si) diode was fabricated using solution-processed, p-type, ZnO nanoparticles and an n-type Si substrate. p-type ZnO nanoparticles were synthesized using a chemical synthesis route and characterized by XRD and a Hall effect measurement system. The device was fabricated by forming thin film of synthesized p-ZnO nanoparticles on an n-Si substrate using a dip coating technique. The device was then characterized by current-voltage (I-V) and capacitance-voltage (C-V) measurements. The effect of UV illumination on the I-V characteristics was also explored and indicated the formation of a highly rectifying, nano heterojunction with a rectification ratio of 101 at 3 V, which increased nearly 2.5 times (232 at 3 V) under UV illumination. However, the cut-in voltage decreases from 1.5 V to 0.9 V under UV illumination. The fabricated device could be used in switches, rectifiers, clipper and clamper circuits, BJTs, MOSFETs and other electronic circuitry.

  7. Microfluidic rectifier based on poly(dimethylsiloxane) membrane and its application to a micropump.

    PubMed

    Wang, Yao-Nan; Tsai, Chien-Hsiung; Fu, Lung-Ming; Lin Liou, Lung-Kai

    2013-01-01

    A microfluidic rectifier incorporating an obstructed microchannel and a PDMS membrane is proposed. During forward flow, the membrane deflects in the upward direction; thereby allowing the fluid to pass over the obstacle. Conversely, during reverse flow, the membrane seals against the obstacle, thereby closing the channel and preventing flow. It is shown that the proposed device can operate over a wide pressure range by increasing or decreasing the membrane thickness as required. A microfluidic pump is realized by integrating the rectifier with a simple stepper motor mechanism. The experimental results show that the pump can achieve a vertical left height of more than 2 m. Moreover, it is shown that a maximum flow rate of 6.3 ml/min can be obtained given a membrane thickness of 200 μm and a motor velocity of 80 rpm. In other words, the proposed microfluidic rectifier not only provides an effective means of preventing reverse flow but also permits the realization of a highly efficient microfluidic pump.

  8. Multi-Service Highly Sensitive Rectifier for Enhanced RF Energy Scavenging

    PubMed Central

    Shariati, Negin; Rowe, Wayne S. T.; Scott, James R.; Ghorbani, Kamran

    2015-01-01

    Due to the growing implications of energy costs and carbon footprints, the need to adopt inexpensive, green energy harvesting strategies are of paramount importance for the long-term conservation of the environment and the global economy. To address this, the feasibility of harvesting low power density ambient RF energy simultaneously from multiple sources is examined. A high efficiency multi-resonant rectifier is proposed, which operates at two frequency bands (478–496 and 852–869 MHz) and exhibits favorable impedance matching over a broad input power range (−40 to −10 dBm). Simulation and experimental results of input reflection coefficient and rectified output power are in excellent agreement, demonstrating the usefulness of this innovative low-power rectification technique. Measurement results indicate an effective efficiency of 54.3%, and an output DC voltage of 772.8 mV is achieved for a multi-tone input power of −10 dBm. Furthermore, the measured output DC power from harvesting RF energy from multiple services concurrently exhibits a 3.14 and 7.24 fold increase over single frequency rectification at 490 and 860 MHz respectively. Therefore, the proposed multi-service highly sensitive rectifier is a promising technique for providing a sustainable energy source for low power applications in urban environments. PMID:25951137

  9. Pharmacological modulations of cardiac ultra-rapid and slowly activating delayed rectifier currents: potential antiarrhythmic approaches.

    PubMed

    Islam, Mohammed A

    2010-01-01

    Despite the emerging new insights into our understandings of the cellular mechanisms underlying cardiac arrhythmia, medical therapy for this disease remains unsatisfactory. Atrial fibrillation (AF), the most prevalent arrhythmia, is responsible for significant morbidity and mortality. On the other hand, ventricular fibrillation results in sudden cardiac deaths in many instances. Prolongation of cardiac action potential (AP) is a proven principle of antiarrhythmic therapy. Class III antiarrhythmic agents prolong AP and QT interval by blocking rapidly activating delayed rectifier current (I(Kr)). However, I(Kr) blocking drugs carry the risk of life-threatening proarrhythmia. Recently, modulation of atrial-selective ultra-rapid delayed rectifier current (I(Kur)), has emerged as a novel therapeutic approach to treat AF. A number of I(Kur) blockers are being evaluated for the treatment of AF. The inhibition of slowly activating delayed rectifier current (I(Ks)) has also been proposed as an effective and safer antiarrhythmic approach because of its distinguishing characteristics that differ in remarkable ways from other selective class III agents. Selective I(Ks) block may prolong AP duration (APD) at rapid rates without leading to proarrhythmia. This article reviews the pathophysiological roles of I(Kur) and I(Ks) in cardiac repolarization and the implications of newly developed I(Kur) and I(Ks) blocking agents as promising antiarrhythmic approaches. Several recent patents pertinent to antiarrhythmic drug development have been discussed. Further research will be required to evaluate the efficacy and safety of these agents in the clinical setting.

  10. Rectifying the output of vibrational piezoelectric energy harvester using quantum dots.

    PubMed

    Li, Lijie

    2017-03-20

    Piezoelectric energy harvester scavenges mechanical vibrations and generates electricity. Researchers have strived to optimize the electromechanical structures and to design necessary external power management circuits, aiming to deliver high power and rectified outputs ready for serving as batteries. Complex deformation of the mechanical structure results in charges with opposite polarities appearing on same surface, leading to current loss in the attached metal electrode. External power management circuits such as rectifiers comprise diodes that consume power and have undesirable forward bias. To address the above issues, we devise a novel integrated piezoelectric energy harvesting device that is structured by stacking a layer of quantum dots (QDs) and a layer of piezoelectric material. We find that the QD can rectify electrical charges generated from the piezoelectric material because of its adaptable conductance to the electrochemical potentials of both sides of the QDs layer, so that electrical current causing energy loss on the same surface of the piezoelectric material can be minimized. The QDs layer has the potential to replace external rectification circuits providing a much more compact and less power-consumption solution.

  11. Rectifying the output of vibrational piezoelectric energy harvester using quantum dots

    PubMed Central

    Li, Lijie

    2017-01-01

    Piezoelectric energy harvester scavenges mechanical vibrations and generates electricity. Researchers have strived to optimize the electromechanical structures and to design necessary external power management circuits, aiming to deliver high power and rectified outputs ready for serving as batteries. Complex deformation of the mechanical structure results in charges with opposite polarities appearing on same surface, leading to current loss in the attached metal electrode. External power management circuits such as rectifiers comprise diodes that consume power and have undesirable forward bias. To address the above issues, we devise a novel integrated piezoelectric energy harvesting device that is structured by stacking a layer of quantum dots (QDs) and a layer of piezoelectric material. We find that the QD can rectify electrical charges generated from the piezoelectric material because of its adaptable conductance to the electrochemical potentials of both sides of the QDs layer, so that electrical current causing energy loss on the same surface of the piezoelectric material can be minimized. The QDs layer has the potential to replace external rectification circuits providing a much more compact and less power-consumption solution. PMID:28317841

  12. Rectifying the output of vibrational piezoelectric energy harvester using quantum dots

    NASA Astrophysics Data System (ADS)

    Li, Lijie

    2017-03-01

    Piezoelectric energy harvester scavenges mechanical vibrations and generates electricity. Researchers have strived to optimize the electromechanical structures and to design necessary external power management circuits, aiming to deliver high power and rectified outputs ready for serving as batteries. Complex deformation of the mechanical structure results in charges with opposite polarities appearing on same surface, leading to current loss in the attached metal electrode. External power management circuits such as rectifiers comprise diodes that consume power and have undesirable forward bias. To address the above issues, we devise a novel integrated piezoelectric energy harvesting device that is structured by stacking a layer of quantum dots (QDs) and a layer of piezoelectric material. We find that the QD can rectify electrical charges generated from the piezoelectric material because of its adaptable conductance to the electrochemical potentials of both sides of the QDs layer, so that electrical current causing energy loss on the same surface of the piezoelectric material can be minimized. The QDs layer has the potential to replace external rectification circuits providing a much more compact and less power-consumption solution.

  13. Characterization and functional consequences of delayed rectifier current transient in ventricular repolarization.

    PubMed

    Gintant, G A

    2000-03-01

    Although inactivation of the rapidly activating delayed rectifier current (I(Kr)) limits outward current on depolarization, the role of I(Kr) (and recovery from inactivation) during repolarization is uncertain. To characterize I(Kr) during ventricular repolarization (and compare with the inward rectifier current, I(K1)), voltage-clamp waveforms simulating the action potential were applied to canine ventricular, atrial, and Purkinje myocytes. In ventricular myocytes, I(Kr) was minimal at plateau potentials but transiently increased during repolarizing ramps. The I(Kr) transient was unaffected by repolarization rate and maximal after 150-ms depolarizations (+25 mV). Action potential clamps revealed the I(Kr) transient terminating the plateau. Although peak I(Kr) transient density was relatively uniform among myocytes, potentials characterizing the peak transients were widely dispersed. In contrast, peak inward rectifier current (I(K1)) density during repolarization was dispersed, whereas potentials characterizing I(K1) defined a narrower (more negative) voltage range. In summary, rapidly activating I(Kr) provides a delayed voltage-dependent (and functionally time-independent) outward transient during ventricular repolarization, consistent with rapid recovery from inactivation. The heterogeneous voltage dependence of I(Kr) provides a novel means for modulating the contribution of this current during repolarization.

  14. UV/ozone assisted local graphene (p)/ZnO(n) heterojunctions as a nanodiode rectifier

    NASA Astrophysics Data System (ADS)

    Sahatiya, Parikshit; Badhulika, Sushmee

    2016-07-01

    Here we report the fabrication of a novel graphene/ZnO nanodiode by UV/ozone assisted oxidation of graphene and demonstrate its application as a half-wave rectifier to generate DC voltage. The method involves the use of electrospinning for one-step in situ synthesis and alignment of single Gr/ZnO nanocomposite across metal electrodes. On subsequent UV illumination, graphene oxidizes, which induces p type doping and ZnO being an n type semiconductor, thus resulting in the formation of a nanodiode. The as-fabricated device shows strong non-linear current-voltage characteristic similar to that of conventional semiconductor p-n junction diodes. Excellent rectifying behavior with a rectification ratio of ~103 was observed and the nanodiodes were found to exhibit long-term repeatability in their performance. Ideality factor and barrier height, as calculated by the thermionic emission model, were found to be 1.6 and 0.504 eV respectively. Due to the fact that diodes are the basic building blocks in the electronics and semiconductor industry, the successful fabrication of these nanodiodes based on UV assisted p type doping of graphene indicates that this approach can be used for developing highly scalable and efficient components for nanoelectronics, such as rectifiers and logic gates that find applications in numerous fields.

  15. SPEED AND VOLTAGE CONTROL OF ELECTRICAL MACHINES WITH THE AID OF THYRYSTORS (TRANSISTORS) (REGULACJA PREDKOSCI I NAPIECIA W MASZYNACH ELECTROYCZNYCH ZA POMOCQ TYRYSTOROW),

    DTIC Science & Technology

    of a system for automatic control of voltage and current of a three-phase rectifier using SCRs and its application to the control of speed of a DC ... motor with external excitation are considered. The relative advantages of using either semiconductor devices or magnetic devices in rectifier control

  16. Programmable controller system for wind tunnel diversion vanes

    NASA Technical Reports Server (NTRS)

    King, R. F.

    1982-01-01

    A programmable controller (PC) system automatic sequence control, which acts as a supervisory controller for the servos, selects the proper drives, and automatically sequences the vanes, was developed for use in a subsonic wind tunnel. Tunnel modifications include a new second test section (80 ft x 100 ft with a maximum air speed capability of 110 knots) and an increase in maximum velocity flow from 200 knots to 300 knots. A completely automatic sequence control is necessary in order to allow intricate motion of the 14 triangularly arranged vanes which can be as large as 70 ft high x 35 ft wide and which require precise acceleration and deceleration control. Rate servos on each drive aid in this control, and servo cost was minimized by using four silicon controlled rectifier controllers to control the 20 dc drives. The PC has a programming capacity which facilitated the implementation of extensive logic design. A series of diagrams sequencing the vanes and a block diagram of the system are included.

  17. Properties of rectified averaging of an evoked-type signal: theory and application to the vestibular-evoked myogenic potential.

    PubMed

    Colebatch, J G

    2009-11-01

    The properties of rectified averages were investigated using the VEMP (vestibular-evoked myogenic potential) as an example of an evoked-type response. Recordings were made of surface EMG from the sternocleidomastoid (SCM) muscles of six volunteers, unstimulated, at different levels of tonic activation and then in response to clicks of different intensities. The stochastic properties of the surface EMG recorded were shown to be well modelled using a zero mean normal distribution with a standard deviation equivalent to the mean RMS (root mean squared) value (mean residual error variance 0.87%). Assuming a normal distribution, equations were derived for the expected value of both the rectified and RMS average with the addition of constant waveforms of different sizes. A simulation using recorded EMG and added sine waves of different amplitudes demonstrated that the equations predicted the rectified averages accurately. It also confirmed the importance of the relative amplitude of the added signal in determining whether it was detected using rectified averages. The same equations were then applied to actual data consisting of VEMPs of different relative amplitudes recorded from the volunteers. Whilst the signal-to-noise ratio (measured by corrected amplitude) was a major determinant of the nature of the rectified average, consistent deviations were detected between the predicted and actual rectified averages. Deviations from predicted values indicated that the VEMP did not behave simply like a constant signal added to tonic background EMG. A more complicated model, which included temporal jitter as well as inhibition of background EMG during the VEMP, was required to fit the physiological recordings. Rectified averages are sensitive to physiological properties, which are not apparent when using unrectified averages alone. Awareness of the properties of rectified averages should improve their interpretation.

  18. Controlled dissolution of silicon dioxide layers for depth resolved multielement analysis by inductively coupled plasma-mass spectrometry

    NASA Astrophysics Data System (ADS)

    Lorge, Susan E.; Houk, R. S.

    2009-11-01

    Dissolution procedures were developed to control the number of surface layers removed, in an attempt to achieve depth resolved analysis by inductively coupled plasma-mass spectrometry (ICP-MS). NIST 612 glass was chosen because it is a homogeneous material with many elements at interesting concentrations, ~ 50 ppm. Varying dissolution time and HF concentration resulted in the reproducible removal of SiO 2 layers as thin as 70 Å deep. Dissolved trace metals were determined after dilution by inductively coupled plasma-mass spectrometry (ICP-MS) with a magnetic sector instrument. The amount removed was determined from the concentration of a major element, Ca. With the exception of Zn, trace metal concentrations agreed reasonably well with their certified values for removal depths of 500, 300 and 150 Å. Zinc concentration was significantly high in all dissolutions indicating either a contamination problem or that Zn is removed at a faster rate than Ca. For the dissolutions that removed 70 Å of SiO 2, Cr, Mn, Co, Sr, Cd, Ce, Dy, Er, Yb and U recovery results agreed with their certified values (~ 50 ppm); Ti, As, Mo, Ba, and Th could not be determined because net intensities were below 3 σ of the blank; and measured concentrations for Cu, Pb and Zn were well above the certified values.

  19. Surface rippling by oblique ion incidence during plasma etching of silicon: Experimental demonstration using sheath control plates

    NASA Astrophysics Data System (ADS)

    Nakazaki, Nobuya; Matsumoto, Haruka; Eriguchi, Koji; Ono, Kouichi

    2015-09-01

    In the microfabrication of 3D transistors (e.g. Fin-FET), the sidewall roughness, such as LER and LWR caused by off-normal or oblique ion incidence during plasma etching, is a critical issue to be resolved, which in turn requires a better understanding of the effects of ion incidence angle θi on surface roughening. This paper presents surface roughening and rippling by oblique ion incidence during inductively coupled plasma etching of Si in Cl2, using the experimental setup as in our previous study. The oblique ion incidence was achieved by sheath control plates, which were placed on and electrically connected to the wafer stage. The plates had slits to vary the sheath structure thereon and to extract ions from plasma to samples on the bottom and/or side of the slits. The results indicated that at θi ~ 40° or oblique incidence; ripple structures were formed on surfaces perpendicularly to the direction of ion incidence, on the other hand, at θi ~ 80° or grazing incidence, small ripples or slit like grooves were formed on surfaces parallel to the direction of ion incidence, as predicted in our previous numerical investigations.

  20. Process for producing silicon

    DOEpatents

    Olson, Jerry M.; Carleton, Karen L.

    1984-01-01

    A process for producing silicon includes forming an alloy of copper and silicon and positioning the alloy in a dried, molten salt electrolyte to form a solid anode structure therein. An electrically conductive cathode is placed in the electrolyte for plating silicon thereon. The electrolyte is then purified to remove dissolved oxides. Finally, an electrical potential is applied between the anode and cathode in an amount sufficient to form substantially pure silicon on the cathode in the form of substantially dense, coherent deposits.

  1. Electrodeposition of molten silicon

    DOEpatents

    De Mattei, Robert C.; Elwell, Dennis; Feigelson, Robert S.

    1981-01-01

    Silicon dioxide is dissolved in a molten electrolytic bath, preferably comprising barium oxide and barium fluoride. A direct current is passed between an anode and a cathode in the bath to reduce the dissolved silicon dioxide to non-alloyed silicon in molten form, which is removed from the bath.

  2. Efficient Silicon Reactor

    NASA Technical Reports Server (NTRS)

    Bates, H. E.; Hill, D. M.; Jewett, D. N.

    1983-01-01

    High-purity silicon efficiently produced and transferred by continuous two-cycle reactor. New reactor operates in relatively-narrow temperature rate and uses large surfaces area to minimize heat expenditure and processing time in producing silicon by hydrogen reduction of trichlorosilane. Two cycles of reactor consists of silicon production and removal.

  3. A Voltage Controlled Oscillator for a Phase-Locked Loop Frequency Synthesizer in a Silicon-on-Sapphire Process

    SciTech Connect

    Garrison, Sean

    2009-05-21

    Engineers from a government-owned engineering and manufacturing facility were contracted by government-owned research laboratory to design and build an S-band telemetry transmitter using Radio Frequency Integrated Circuit (RFIC) technology packaged in a Low-Temperature Co-fired Ceramic (LTCC) Multi-Chip Module. The integrated circuit technology chosen for the Phase-Locked Loop Frequency Synthesizer portion of the telemetry transmitter was a 0.25 um CMOS process that utilizes a sapphire substrate and is fabricated by Peregrine Semiconductor corporation. This thesis work details the design of the Voltage Controlled Oscillator (VCO) portion of the PLL frequency synthesizer and constitutes an fully integrated VCO core circuit and a high-isolation buffer amplifier. The high-isolation buffer amplifier was designed to provide 16 dB of gain for 2200-3495 MHz as well as 60 dB of isolation for the oscillator core to provide immunity to frequency pulling due to RF load mismatch. Actual measurements of the amplifier gain and isolation showed the gain was approximately 5 dB lower than the simulated gain when all bond-wire and test substrate parasitics were taken into account. The isolation measurements were shown to be 28 dB at the high end of the frequency band but the measurement was more than likely compromised due to the aforementioned bond-wire and test substrate parasitics. The S-band oscillator discussed in this work was designed to operate over a frequency range of 2200 to 2300 MHz with a minimum output power of 0 dBm with a phase-noise of -92 dBc/Hz at a 100 kHz offset from the carrier. The tuning range was measured to be from 2215 MHz to 2330 MHz with a minimum output power of -7 dBm over the measured frequency range. A phase-noise of -90 dBc was measured at a 100 kHz offset from the carrier.

  4. Impurities in silicon solar cells

    NASA Technical Reports Server (NTRS)

    Hopkins, R. H.

    1985-01-01

    Metallic impurities, both singly and in combinations, affect the performance of silicon solar cells. Czochralski silicon web crystals were grown with controlled additions of secondary impurities. The primary electrical dopants were boron and phosphorus. The silicon test ingots were grown under controlled and carefully monitored conditions from high-purity charge and dopant material to minimize unintentional contamination. Following growth, each crystal was characterized by chemical, microstructural, electrical, and solar cell tests to provide a detailed and internally consistent description of the relationships between silicon impurity concentration and solar cell performance. Deep-level spectroscopy measurements were used to measure impurity concentrations at levels below the detectability of other techniques and to study thermally-induced changes in impurity activity. For the majority of contaminants, impurity-induced performance loss is due to a reduction of the base diffusion length. From these observations, a semi-empirical model which predicts cell performance as a function of metal impurity concentration was formulated. The model was then used successfully to predict the behavior of solar cells bearing as many as 11 different impurities.

  5. Formation of iron disilicide on amorphous silicon

    NASA Astrophysics Data System (ADS)

    Erlesand, U.; Östling, M.; Bodén, K.

    1991-11-01

    Thin films of iron disilicide, β-FeSi 2 were formed on both amorphous silicon and on crystalline silicon. The β-phase is reported to be semiconducting with a direct band-gap of about 0.85-0.89 eV. This phase is known to form via a nucleation-controlled growth process on crystalline silicon and as a consequence a rather rough silicon/silicide interface is usually formed. In order to improve the interface a bilayer structure of amorphous silicon and iron was sequentially deposited on Czochralski <111> silicon in an e-gun evaporation system. Secondary ion mass spectrometry profiling (SIMS) and scanning electron micrographs revealed an improvement of the interface sharpness. Rutherford backscattering spectrometry (RBS) and X-ray diffractiometry showed β-FeSi 2 formation already at 525°C. It was also observed that the silicide growth was diffusion-controlled, similar to what has been reported for example in the formation of NiSi 2 for the reaction of nickel on amorphous silicon. The kinetics of the FeSi 2 formation in the temperature range 525-625°C was studied by RBS and the activation energy was found to be 1.5 ± 0.1 eV.

  6. Silicon nanoparticle optimization and integration into amorphous silicon via PECVD for use in photovoltaics

    NASA Astrophysics Data System (ADS)

    Klafehn, Grant W.

    An alternative approach to traditional growth methods of nanocrystalline material is co-deposition by injection of separately synthesized silicon nanoparticles into amorphous silicon. Current methods of co-deposition of silicon nanoparticles and amorphous silicon via plasma enhanced chemical vapor deposition allow the two reactors' pressures to affect each other, leading to either poor amorphous silicon quality or uncontrollable nanoparticle size and deposition rate. In this thesis, a technique for greater control of stand-alone silicon nanoparticle size and quality grown was achieved by using a slit nozzle. The nozzle was used to separate the nanoparticle and amorphous reactors, allowing for the ability to control nanoparticle size, crystallinity, and deposition rate during co-deposition, while still allowing for high quality amorphous silicon growth. Changing the width of the nozzle allowed for control of the size of the nanoparticles from 10 to 4.5 nm in diameter, and allowed for the precursor gas flow rate, and thus deposition rate, to be changed with only a 6 % change in size estimated from luminescence emission wavelength. Co-deposited samples were grown within a broad range of flow rates for the silicon nanoparticle precursor gas, resulting in each sample having a different crystal fraction. FTIR, PL, Raman, and XRD were used to analyze their composition. The silicon nanoparticle synthesis was separately optimized to control size and crystallinity, and the influence of the nanoparticle process gases on amorphous silicon growth was also explored. Finally, COMSOL simulations were performed to support and possibly predict Si-NP growth variables that pertain to Si-NP size.

  7. Voltage-Rectified Current and Fluid Flow in Conical Nanopores.

    PubMed

    Lan, Wen-Jie; Edwards, Martin A; Luo, Long; Perera, Rukshan T; Wu, Xiaojian; Martin, Charles R; White, Henry S

    2016-11-15

    pump fluids with very precise control across membranes containing conical pores via the application of a symmetric sinusoidal voltage. The combination of pressure and asymmetric EOF can also provide a means to generate new nanopore electrical behaviors, including negative differential resistance (NDR), in which the current through a conical pore decreases with increasing driving force (applied voltage), similar to solid-state tunnel diodes. NDR results from a positive feedback mechanism between the ion distributions and EOF, yielding a true bistability in both fluid flow and electrical current at a critical applied voltage. Nanopore-based NDR is extremely sensitive to the surface charge near the nanopore opening, suggesting possible applications in chemical sensing.

  8. Bond Testing for Effects of Silicone Contamination

    NASA Technical Reports Server (NTRS)

    Plaia, James; Evans, Kurt

    2005-01-01

    In 2003 ATK Thiokol discovered that the smocks and coveralls worn by its operations personnel for safety and contamination control were themselves contaminated with a silicone defoamer and a silicone oil. As a growing list of items have been identified as having this form of contamination, it was desirable to devise a test method to determine if the contamination level detected could cause subsequent processing concerns. The smocks and coveralls could potentially contact bonding surfaces during processing so the test method focused on dry transfer of the silicone from the clothing to the bonding surface.

  9. Removing Undesired Fine Powder From Silicon Reactor

    NASA Technical Reports Server (NTRS)

    Flagella, Robert N.

    1992-01-01

    Fluidized-bed reactor produces highly pure polycrystalline silicon particles with diameters approximately greater than 400 micrometers. Operates by pyrolysis of silane in reaction zone, which is bed of silicon seed particles fluidized by flow of silane and carrier gas. Above reaction zone, gas mixture flows rapidly enough to entrain silicon powders, but not larger seed and product particles. Entrained particles swept out of reactor. Applicable to other processes such as production of fine metal and ceramic powders where control of sizes of product needed.

  10. Glass-silicon column

    DOEpatents

    Yu, Conrad M.

    2003-12-30

    A glass-silicon column that can operate in temperature variations between room temperature and about 450.degree. C. The glass-silicon column includes large area glass, such as a thin Corning 7740 boron-silicate glass bonded to a silicon wafer, with an electrode embedded in or mounted on glass of the column, and with a self alignment silicon post/glass hole structure. The glass/silicon components are bonded, for example be anodic bonding. In one embodiment, the column includes two outer layers of silicon each bonded to an inner layer of glass, with an electrode imbedded between the layers of glass, and with at least one self alignment hole and post arrangement. The electrode functions as a column heater, and one glass/silicon component is provided with a number of flow channels adjacent the bonded surfaces.

  11. Porous silicon gettering

    SciTech Connect

    Tsuo, Y.S.; Menna, P.; Al-Jassim, M.

    1995-08-01

    We have studied a novel extrinsic gettering method that utilizes the very large surface areas, produced by porous silicon etch on both front and back surfaces of the silicon wafer, as gettering sites. In this method, a simple and low-cost chemical etching is used to generate the porous silicon layers. Then, a high-flux solar furnace (HFSF) is used to provide high-temperature annealing and the required injection of silicon interstitials. The gettering sites, along with the gettered impurities, can be easily removed at the end the process. The porous silicon removal process consists of oxidizing the porous silicon near the end the gettering process followed by sample immersion in HF acid. Each porous silicon gettering process removes up to about 10 {mu}m of wafer thickness. This gettering process can be repeated so that the desired purity level is obtained.

  12. Phosphatidylinositol-4,5-bisphosphate (PIP2) regulation of strong inward rectifier Kir2.1 channels: multilevel positive cooperativity.

    PubMed

    Xie, Lai-Hua; John, Scott A; Ribalet, Bernard; Weiss, James N

    2008-04-01

    Inwardly rectifying potassium (Kir) channels are gated by the interaction of their cytoplasmic regions with membrane-bound phosphatidylinositol-4,5-bisphosphate (PIP(2)). In the present study, we examined how PIP(2) interaction regulates channel availability and channel openings to various subconductance levels (sublevels) as well as the fully open state in the strong inward rectifier Kir2.1 channel. Various Kir2.1 channel constructs were expressed in Xenopus oocytes and single channel or macroscopic currents were recorded from inside-out patches. The wild-type (WT) channel rarely visited the subconductance levels under control conditions. However, upon reducing Kir2.1 channel interaction with PIP(2) by a variety of interventions, including PIP(2) antibodies, screening PIP(2) with neomycin, or mutating PIP(2) binding sites (e.g. K188Q), visitation to the sublevels was markedly increased before channels were converted to an unavailable mode in which they did not open. No channel activity was detected in channels with the double mutation K188A/R189A, a mutant which exhibits extremely weak interaction with PIP(2). By linking subunits together in tandem dimers or tetramers containing mixtures of WT and K188A/R189A subunits, we demonstrate that one functional PIP(2)-interacting WT subunit is sufficient to convert channels from the unavailable to the available mode with a high open probability dominated by the fully open state, with similar kinetics as tetrameric WT channels. Occasional openings to sublevels become progressively less frequent as the number of WT subunits increases. Quantitative analysis reveals that the interaction of PIP(2) with WT subunits exerts strong positive cooperativity in both converting the channels from the unavailable to the available mode, and in promoting the fully open state over sublevels. We conclude that the interaction of PIP(2) with only one Kir2.1 subunit is sufficient for the channel to become available and to open to its full

  13. Magnetotransport and rectifying properties in La0.67Ca0.33MnO3/yttrium-stabilized zirconia/Si heterojunction

    NASA Astrophysics Data System (ADS)

    Lang, P. L.; Zhao, Y. G.; Yang, B.; Zhang, X. L.; Li, J.; Wang, P.; Zheng, D. N.

    2005-08-01

    A heterojunction has been fabricated by growing a La0.67Ca0.33MnO3 film on silicon with a buffer layer of yttrium-stabilized zirconia (YSZ). The current-voltage measurement shows that it is a diode with a good rectifying property. At low positive bias voltage, temperature dependence of the junction resistance shows a peak at a certain temperature, which shifts to low temperatures when the voltage is increased from 0.3Vto0.7V. This behavior is quite different from the previous reports on p-n junctions composed of manganites and Nb-doped SrTiO3. The heterojunction shows remarkable magnetoresistance for both positive and negative biases. The results were discussed by considering the depletion layers in both La0.67Ca0.33MnO3 and Si, and the tunneling through YSZ. This work shows the potential application of integrating manganite-based devices and semiconductor circuits.

  14. Correlation between barrier inhomogeneities of 4H-SiC 1 A/600 V Schottky rectifiers and deep-level defects revealed by DLTS and Laplace DLTS

    NASA Astrophysics Data System (ADS)

    Gelczuk, Ł.; Kamyczek, P.; Płaczek-Popko, E.; Dąbrowska-Szata, M.

    2014-09-01

    Electrical properties of commercial silicon carbide (SiC) Schottky rectifiers are investigated through the measurement and analysis of the forward current-voltage (I-V) and reverse capacitance-voltage (C-V) characteristics in a large temperature range. Some of devices show distinct discrepancies in specific ranges of their electrical characteristics, especially the excess current dominates at voltage <1 V and temperature <300 K. Standard deep level transient spectroscopy (DLTS) revealed the presence of a single deep-level defect with activation energy of about 0.3 eV, exhibiting the features characteristic for extended defects (e.g. dislocations), such as logarithmic capture kinetics. Furthermore, high-resolution Laplace DLTS showed that this deep level consists actually of three closely spaced levels with activation energies ranging from about 0.26 eV to 0.29 eV. A strong correlation between these two techniques implies that the revealed trap level is due to extended defects surrounded by point traps or clusters of defects. On the basis of obtained specific features of the deep-level defect, it was proposed that this defect is arguably responsible for the observed Schottky barrier inhomogeneities.

  15. High-voltage 4H-SiC trench MOS barrier Schottky rectifier with low forward voltage drop using enhanced sidewall layer

    NASA Astrophysics Data System (ADS)

    Cho, Doohyung; Sim, Seulgi; Park, Kunsik; Won, Jongil; Kim, Sanggi; Kim, Kwangsoo

    2015-12-01

    In this paper, a 4H-SiC trench MOS barrier Schottky (TMBS) rectifier with an enhanced sidewall layer (ESL) is proposed. The proposed structure has a high doping concentration at the trench sidewall. This high doping concentration improves both the reverse blocking and forward characteristics of the structure. The ESL-TMBS rectifier has a 7.4% lower forward voltage drop and a 24% higher breakdown voltage. However, this structure has a reverse leakage current that is approximately three times higher than that of a conventional TMBS rectifier owing to the reduction in energy barrier height. This problem is solved when ESL is used partially, since its use provides a reverse leakage current that is comparable to that of a conventional TMBS rectifier. Thus, the forward voltage drop and breakdown voltage improve without any loss in static and dynamic characteristics in the ESL-TMBS rectifier compared with the performance of a conventional TMBS rectifier.

  16. Two-Temperature-Zone Silicon Reactor

    NASA Technical Reports Server (NTRS)

    Sanjurjo, A.; Nanis, L.; Kapur, V. K.; Weaver, R. D.

    1983-01-01

    When high purity silicon is synthesized by reduction of silicon tetrafluoride by sodium, very-fast highly exothermic reaction takes place. Controlled reaction is proposed in which SiF4-pressurized vertical reactor operates with two temperature zones. Liquid sodium feeds from nozzle at top of rector without reacting with SiF4. When sodium reaches higher temperature region at bottom, reaction takes place immediately.

  17. An insecticide resistance-breaking mosquitocide targeting inward rectifier potassium channels in vectors of Zika virus and malaria

    PubMed Central

    Swale, Daniel R.; Engers, Darren W.; Bollinger, Sean R.; Gross, Aaron; Inocente, Edna Alfaro; Days, Emily; Kanga, Fariba; Johnson, Reed M.; Yang, Liu; Bloomquist, Jeffrey R.; Hopkins, Corey R.; Piermarini, Peter M.; Denton, Jerod S.

    2016-01-01

    Insecticide resistance is a growing threat to mosquito control programs around the world, thus creating the need to discover novel target sites and target-specific compounds for insecticide development. Emerging evidence suggests that mosquito inward rectifier potassium (Kir) channels represent viable molecular targets for developing insecticides with new mechanisms of action. Here we describe the discovery and characterization of VU041, a submicromolar-affinity inhibitor of Anopheles (An.) gambiae and Aedes (Ae.) aegypti Kir1 channels that incapacitates adult female mosquitoes from representative insecticide-susceptible and -resistant strains of An. gambiae (G3 and Akron, respectively) and Ae. aegypti (Liverpool and Puerto Rico, respectively) following topical application. VU041 is selective for mosquito Kir channels over several mammalian orthologs, with the exception of Kir2.1, and is not lethal to honey bees. Medicinal chemistry was used to develop an analog, termed VU730, which retains activity toward mosquito Kir1 but is not active against Kir2.1 or other mammalian Kir channels. Thus, VU041 and VU730 are promising chemical scaffolds for developing new classes of insecticides to combat insecticide-resistant mosquitoes and the transmission of mosquito-borne diseases, such as Zika virus, without harmful effects on humans and beneficial insects. PMID:27849039

  18. Molecular and functional characterization of Anopheles gambiae inward rectifier potassium (Kir1) channels: a novel role in egg production.

    PubMed

    Raphemot, Rene; Estévez-Lao, Tania Y; Rouhier, Matthew F; Piermarini, Peter M; Denton, Jerod S; Hillyer, Julián F

    2014-08-01

    Inward rectifier potassium (Kir) channels play essential roles in regulating diverse physiological processes. Although Kir channels are encoded in mosquito genomes, their functions remain largely unknown. In this study, we identified the members of the Anopheles gambiae Kir gene family and began to investigate their function. Notably, we sequenced the A. gambiae Kir1 (AgKir1) gene and showed that it encodes all the canonical features of a Kir channel: an ion pore that is composed of a pore helix and a selectivity filter, two transmembrane domains that flank the ion pore, and the so-called G-loop. Heterologous expression of AgKir1 in Xenopus oocytes revealed that this gene encodes a functional, barium-sensitive Kir channel. Quantitative RT-PCR experiments then showed that relative AgKir1 mRNA levels are highest in the pupal stage, and that AgKir1 mRNA is enriched in the adult ovaries. Gene silencing of AgKir1 by RNA interference did not affect the survival of female mosquitoes following a blood meal, but decreased their egg output. These data provide evidence for a new role of Kir channels in mosquito fecundity, and further validates them as promising molecular targets for the development of a new class of mosquitocides to be used in vector control.

  19. Monolithic silicon bolometers

    NASA Technical Reports Server (NTRS)

    Downey, P. M.; Jeffries, A. D.; Meyer, S. S.; Weiss, R.; Bachner, F. J.; Donnelly, J. P.; Lindley, W. T.; Mountain, R. W.; Silversmith, D. J.

    1984-01-01

    A new type of bolometer detector for the millimeter and submillimeter spectral range is described. The bolometer is constructed of silicon using integrated circuit fabrication techniques. Ion implantation is used to give controlled resistance vs temperature properties as well as extremely low 1/f noise contacts. The devices have been tested between 4.2 and 0.3 K. The best electrical NEP measured is 4 x 10 to the -16th W/Hz to the 1/2 at 0.35 K between 1- and 10-Hz modulation frequency. This device had a detecting area of 0.25 sq cm and a time constant of 20 msec at a bath temperature of 0.35 K.

  20. Semiconductor systems utilizing materials that form rectifying junctions in both N and P-type doping regions, whether metallurgically or field induced, and methods of use

    DOEpatents

    Welch, James D.

    2000-01-01

    Disclosed are semiconductor systems, such as integrated circuits utilizing Schotky barrier and/or diffused junction technology, which semiconductor systems incorporate material(s) that form rectifying junctions in both metallurgically and/or field induced N and P-type doping regions, and methods of their use. Disclosed are Schottky barrier based inverting and non-inverting gate voltage channel induced semiconductor single devices with operating characteristics similar to multiple device CMOS systems and which can be operated as modulators, N and P-channel MOSFETS and CMOS formed therefrom, and (MOS) gate voltage controlled rectification direction and gate voltage controlled switching devices, and use of such material(s) to block parasitic current flow pathways. Simple demonstrative five mask fabrication procedures for inverting and non-inverting gate voltage channel induced semiconductor single devices with operating characteristics similar to multiple device CMOS systems are also presented.

  1. Advanced SEM/EDS Analysis using Stage Control and an annular Silicon Drift Detector: Applications in Impact Studies from Centimetre below Micrometre Scale

    NASA Astrophysics Data System (ADS)

    Salge, Tobias; Berlin, Jana; Terborg, Ralf; Howard, Kieren; Newsom, Horton; Wozniakiewicz, Penny; Price, Mark; Burchell, Mark; Cole, Mike; Kearsley, Anton

    2013-04-01

    Introduction: Imaging of ever smaller structures, in situ within large samples, requires low electron beam energy (HV<6 kV) to enhance spatial resolution, and therefore also the use of low energy X-ray lines for element analysis. To separate significantly overlapping peaks e.g. N-K (392 eV) and Ti-Ll (395 eV), the incorporation of line deconvolution algorithms in energy dispersive X-ray software is of crucial importance. Methods: Without adequate X-ray count statistics, deconvolution is unlikely to be effective. We therefore used an annular Silicon Drift Detector (SDD), the Bruker XFlash® 5060F which is placed between the pole piece and sample. High take-off angle and collection of X-rays from four different directions allow data collection across samples with substantial surface topography. Automated stage control and spectrum imaging allow large data sets to be acquired within a short time. Applications: (A) Large area, high resolution images (with tiling or stitching of neighbouring areas) is useful for understanding processes in the formation of tektites [1], revealing flow textures and layering, without destructive section preparation. Coalescence textures formed during the transition from melt to solid, surface pitting produced by micro-impact collisions in the impact plume, and surface etching by chemical attack in the impact plume, or later weathering, can all be revealed. (B) Spectrum imaging of the matrix in the impact melt breccia of the Chicxulub impact crater (Yaxcopoil-1 borehole, Unit 5 861.72 m) reveals secondary mineral formation, such as NaCl (<500 nm) and Fe-Ti-oxides (<150 nm) associated with garnet resorption. It documents the role of multiple episodes of precipitation of Mg-rich phyllosilicates as well as the formation and dissolution of accessory minerals in a relatively high temperature (>300°C) hydrothermal event [2]. (C) In experimental hypervelocity impact craters, spectrum images readily find locations of projectile residue throughout

  2. Graphene as transparent and current spreading electrode in silicon solar cell

    NASA Astrophysics Data System (ADS)

    Behura, Sanjay K.; Mahala, Pramila; Nayak, Sasmita; Jani, Omkar

    2014-11-01

    Fabricated bi-layer graphene (BLG) has been studied as transparent and current spreading electrode (TCSE) for silicon solar cell, using TCAD-Silvaco 2D simulation. We have carried out comparative study using both Ag grids and BLG as current spreading electrode (CSE) and TCSE, respectively. Our study reveals that BLG based solar cell shows better efficiency of 24.85% than Ag-based cell (21.44%), in all of the critical aspects, including generation rate, recombination rate, electric field, potential and quantum efficiency. Further BLG based cell exhibits pronounce rectifying behavior, low saturation current, and good turn-on voltage while studying in dark.

  3. Graphene as transparent and current spreading electrode in silicon solar cell

    SciTech Connect

    Behura, Sanjay K. Nayak, Sasmita; Jani, Omkar; Mahala, Pramila

    2014-11-15

    Fabricated bi-layer graphene (BLG) has been studied as transparent and current spreading electrode (TCSE) for silicon solar cell, using TCAD-Silvaco 2D simulation. We have carried out comparative study using both Ag grids and BLG as current spreading electrode (CSE) and TCSE, respectively. Our study reveals that BLG based solar cell shows better efficiency of 24.85% than Ag-based cell (21.44%), in all of the critical aspects, including generation rate, recombination rate, electric field, potential and quantum efficiency. Further BLG based cell exhibits pronounce rectifying behavior, low saturation current, and good turn-on voltage while studying in dark.

  4. Photoperiod Modulates Fast Delayed Rectifier Potassium Currents in the Mammalian Circadian Clock

    PubMed Central

    Meijer, Johanna H.; Michel, Stephan

    2016-01-01

    One feature of the mammalian circadian clock, situated in the suprachiasmatic nucleus (SCN), is its ability to measure day length and thereby contribute to the seasonal adaptation of physiology and behavior. The timing signal from the SCN, namely the 24 hr pattern of electrical activity, is adjusted according to the photoperiod being broader in long days and narrower in short days. Vasoactive intestinal peptide and gamma-aminobutyric acid play a crucial role in intercellular communication within the SCN and contribute to the seasonal changes in phase distribution. However, little is known about the underlying ionic mechanisms of synchronization. The present study was aimed to identify cellular mechanisms involved in seasonal encoding by the SCN. Mice were adapted to long-day (light–dark 16:8) and short-day (light–dark 8:16) photoperiods and membrane properties as well as K+ currents activity of SCN neurons were measured using patch-clamp recordings in acute slices. Remarkably, we found evidence for a photoperiodic effect on the fast delayed rectifier K+ current, that is, the circadian modulation of this ion channel’s activation reversed in long days resulting in 50% higher peak values during the night compared with the unaltered day values. Consistent with fast delayed rectifier enhancement, duration of action potentials during the night was shortened and afterhyperpolarization potentials increased in amplitude and duration. The slow delayed rectifier, transient K+ currents, and membrane excitability were not affected by photoperiod. We conclude that photoperiod can change intrinsic ion channel properties of the SCN neurons, which may influence cellular communication and contribute to photoperiodic phase adjustment. PMID:27697884

  5. The properties and distribution of inward rectifier potassium currents in pig coronary arterial smooth muscle.

    PubMed Central

    Quayle, J M; Dart, C; Standen, N B

    1996-01-01

    1. Whole-cell potassium currents were studied in single smooth muscle cells enzymatically isolated from pig coronary arteries. 2. In cells isolated from small diameter branches of the left anterior descending coronary artery (LAD), an inward rectifier potassium current (IK(IR)) was identified, which was inhibited by extracellular barium ions, suggesting the presence of inward rectifier potassium (KIR) channels. 3. The conductance for IK(IR) measured in 6, 12, 60 and 140 mM extracellular potassium was a function of membrane potential and the extracellular potassium concentration. 4. On hyperpolarization, IK(IR) activated along an exponential time course with a time constant that was voltage dependent. 5. Inward rectifier current was compared in cells isolated from coronary vessels taken from different points along the vascular tree. Current density was greater in cells isolated from small diameter coronary arteries; at -140 mV it was -20.5 +/- 4.4 pA pF-1 (n = 23) in 4th order branches of the LAD, but -0.8 +/- 0.2 pA pF-1 (n = 11) in the LAD itself. 6. In contrast to IK(IR), there was little effect of arterial diameter on the density of voltage-dependent potassium current; densities at +30 mV were 12.8 +/- 1.3 pA pF-1 (n = 19) in 4th order branches and 17.4 +/- 3.1 pA pF-1 (n = 11) in the LAD. 7. We conclude that KIR channels are present in pig coronary arteries, and that they are expressed at a higher density in small diameter arteries. The presence of an enhanced IK(IR) may have functional consequences for the regulation of cell membrane potential and tone in small coronary arteries. PMID:8865069

  6. Mechanism of enhancement of slow delayed rectifier current by extracellular sulfhydryl modification.

    PubMed

    Yao, J A; Jiang, M; Tseng, G N

    1997-07-01

    To explore the role of sulfhydryl (SH) groups in the function of cardiac slow delayed rectifier channels, we tested the effects of extracellular thimerosal (TMS, a hydrophilic SH modifier) on slow delayed rectifier current (IKs) induced by human IsK (hIsK) in oocytes and on the native IKs in canine ventricular myocytes. TMS (25 or 50 microM) had similar effects on the two currents: current amplitude increased, and there was an acceleration of activation and a slowing of deactivation. These effects showed little or no reversal after washout of TMS. The effects did not depend on intracellular Ca release or protein kinase activities but could be suppressed by dithiothreitol pretreatment. According to the current model of transmembrane topology, there is no cystein in the extracellular domain of hIsK. A likely candidate for TMS modification is the SH group on another subunit in oocyte cell membrane that interacts with IsK to form a functional channel. To explore the domain of hIsK involved in the interaction, extracellular serines of hIsK were mutated to cysteines at three locations: S37C (close to the transmembrane domain), S4C (close to the NH2-terminus), and S28C (in between). S37C and S28C mutations did not affect channel properties or hIsK response to TMS. On the other hand, S4C mutation reduced current expression even when S4C cRNA was injected at a quantity 50-fold higher than that of the other three proteins. Importantly, the response to TMS was markedly reduced in S4C compared with the other three proteins. Therefore, the NH2-terminus of hIsK may be involved in hIsK interaction with the SH-bearing subunit, and this interaction modulates slow delayed rectifier channel function.

  7. Photoperiod Modulates Fast Delayed Rectifier Potassium Currents in the Mammalian Circadian Clock.

    PubMed

    Farajnia, Sahar; Meijer, Johanna H; Michel, Stephan

    2016-10-01

    One feature of the mammalian circadian clock, situated in the suprachiasmatic nucleus (SCN), is its ability to measure day length and thereby contribute to the seasonal adaptation of physiology and behavior. The timing signal from the SCN, namely the 24 hr pattern of electrical activity, is adjusted according to the photoperiod being broader in long days and narrower in short days. Vasoactive intestinal peptide and gamma-aminobutyric acid play a crucial role in intercellular communication within the SCN and contribute to the seasonal changes in phase distribution. However, little is known about the underlying ionic mechanisms of synchronization. The present study was aimed to identify cellular mechanisms involved in seasonal encoding by the SCN. Mice were adapted to long-day (light-dark 16:8) and short-day (light-dark 8:16) photoperiods and membrane properties as well as K(+) currents activity of SCN neurons were measured using patch-clamp recordings in acute slices. Remarkably, we found evidence for a photoperiodic effect on the fast delayed rectifier K(+) current, that is, the circadian modulation of this ion channel's activation reversed in long days resulting in 50% higher peak values during the night compared with the unaltered day values. Consistent with fast delayed rectifier enhancement, duration of action potentials during the night was shortened and afterhyperpolarization potentials increased in amplitude and duration. The slow delayed rectifier, transient K(+) currents, and membrane excitability were not affected by photoperiod. We conclude that photoperiod can change intrinsic ion channel properties of the SCN neurons, which may influence cellular communication and contribute to photoperiodic phase adjustment.

  8. Apparatus and method for the horizontal, crucible-free growth of silicon sheet crystals

    SciTech Connect

    Ciszek, T.F.

    1987-03-17

    This patent describes an apparatus for crucible-free growth of a sheet crystal of silicon, the apparatus comprising; means for providing a substantially enclosed space having an inert atmosphere; heating means for sequentially forming molten silicon from a source of substantially pure silicon within the space; means for vertically feeding a silicon source toward the heating means to form a molten layer of silicon at a top of the source; means for drawing a continuous silicon sheet crystal from the molten silicon layer within the space; wherein a meniscus of molten silicon is created by the drawing means. The apparatus includes means to control the shape of the meniscus, and the controlling means includes a repulsive RF generator for repulsive support of the meniscus as a molten silicon sheet crystal is drawn from the molten silicon. A crucible-free, non-dendritic growth method is described for continuously forming a silicon crystal sheet from a rod of substantially pure silicon, the method comprising: employing an RF heating means having first and second portions to provide a molten layer at an end of the silicon rod in an inert atmosphere by actively heating a first region at the end of the silicon rod while preventing an active heating of a second region of the end of the silicon rod.

  9. Nanocrystalline silicon/amorphous silicon dioxide superlattices

    SciTech Connect

    Fauchet, P.M.; Tsybeskov, L.; Zacharias, M. |; Hirschman, K. |

    1998-12-31

    Thin layers made of densely packed silicon nanocrystals sandwiched between amorphous silicon dioxide layers have been manufactured and characterized. An amorphous silicon/amorphous silicon dioxide superlattice is first grown by CVD or RF sputtering. The a-Si layers are recrystallized in a two-step procedure (nucleation + growth) for form layers of nearly identical nanocrystals whose diameter is given by the initial a-Si layer thickness. The recrystallization is monitored using a variety of techniques, including TEM, X-Ray, Raman, and luminescence spectroscopies. When the a-Si layer thickness decreases (from 25 nm to 2.5 nm) or the a-SiO{sub 2} layer thickness increases (from 1.5 nm to 6 nm), the recrystallization temperature increases dramatically compared to that of a single a-Si film. The removal of the a-Si tissue present between the nanocrystals, the passivation of the nanocrystals, and their doping are discussed.

  10. Silicon germanium carbon heteroepitaxial growth on silicon

    NASA Astrophysics Data System (ADS)

    Mayer, James W.

    1993-10-01

    This project represents the initiation of band-gap engineering of Si-based devices at Arizona State University by James W. Mayer. While at Cornell, he directed the Microscience and Technology program supported by the Semiconductor Research Corporation. His Work on heteoepitaxy of SiGe on silicon convinced him that heteroepitaxy on Si was a viable technique for forming smaller band gap layers on silicon but the requirement was for larger energy-gap materials. In the fall of 1991, James Mayer visited Tom Picraux of Sandia National Laboratories and Clarence Tracy of Motorola Semiconductor Products to discuss the possibility of a joint program to investigate Silicon Germanium Carbon Heteroepitaxial Growth on Silicon. This represented a new research and development initiate for band gap engineering.

  11. Affordable Fabrication and Properties of Silicon Carbide-Based Interpenetrating Phase Composites

    NASA Technical Reports Server (NTRS)

    Singh, Mrityunjay

    1998-01-01

    An affordable processing technique for the fabrication of silicon carbide-based interpenetrating phase composites (IPCs) is presented. This process consists of the production of microporous carbon preforms and subsequent infiltration with liquid silicon or silicon-refractory metal alloys. The microporous preforms are made by the pyrolysis of a polymerized resin mixture for which methods to control pore volume and pore size have been established. The process gives good control of microstructure and morphology of silicon carbide-based composite materials. Room and high temperature mechanical properties (flexural strength, compressive strength, and flexural creep) of low and high silicon-silicon carbide composites will be discussed.

  12. Current-driven antivortex core resonance measured by the rectifying effect

    SciTech Connect

    Goto, Minori; Nozaki, Yukio

    2016-02-15

    We demonstrate the current-driven resonance of a single antivortex core confined in a cross-shaped Ni{sub 81}Fe{sub 19} wire. The antivortex core dynamics can be excited purely by spin transfer torque; therefore, it is significant to understand the current-induced magnetization dynamics. The antivortex core resonance can be measured from the frequency dependence of a rectified voltage generated by an alternating current application. We found that the resonance frequency and peak amplitude greatly depend on the external magnetic field. This result is in good agreement with micromagnetic simulation.

  13. Current-driven antivortex core resonance measured by the rectifying effect

    NASA Astrophysics Data System (ADS)

    Goto, Minori; Nozaki, Yukio

    2016-02-01

    We demonstrate the current-driven resonance of a single antivortex core confined in a cross-shaped Ni81Fe19 wire. The antivortex core dynamics can be excited purely by spin transfer torque; therefore, it is significant to understand the current-induced magnetization dynamics. The antivortex core resonance can be measured from the frequency dependence of a rectified voltage generated by an alternating current application. We found that the resonance frequency and peak amplitude greatly depend on the external magnetic field. This result is in good agreement with micromagnetic simulation.

  14. Different ionic selectivities for connexins 26 and 32 produce rectifying gap junction channels.

    PubMed Central

    Suchyna, T M; Nitsche, J M; Chilton, M; Harris, A L; Veenstra, R D; Nicholson, B J

    1999-01-01

    The functional diversity of gap junction intercellular channels arising from the large number of connexin isoforms is significantly increased by heterotypic interactions between members of this family. This is particularly evident in the rectifying behavior of Cx26/Cx32 heterotypic channels (. Proc. Natl. Acad. Sci. USA. 88:8410-8414). The channel properties responsible for producing the rectifying current observed for Cx26/Cx32 heterotypic gap junction channels were determined in transfected mouse neuroblastoma 2A (N2A) cells. Transfectants revealed maximum unitary conductances (gamma(j)) of 135 pS for Cx26 and 53 pS for Cx32 homotypic channels in 120 mM KCl. Anionic substitution of glutamate for Cl indicated that Cx26 channels favored cations by 2.6:1, whereas Cx32 channels were relatively nonselective with respect to charge. In Cx26/Cx32 heterotypic cell pairs, the macroscopic fast rectification of the current-voltage relationship was fully explained at the single-channel level by a rectifying gamma(j) that increased by a factor of 2.9 as the transjunctional voltage (V(j)) changed from -100 to +100 mV with the Cx26 cell as the positive pole. A model of electrodiffusion of ions through the gap junction pore based on Nernst-Planck equations for ion concentrations and the Poisson equation for the electrical potential within the junction is developed. Selectivity characteristics are ascribed to each hemichannel based on either pore features (treated as uniform along the length of the hemichannel) or entrance effects unique to each connexin. Both analytical GHK approximations and full numerical solutions predict rectifying characteristics for Cx32/Cx26 heterotypic channels, although not to the full extent seen empirically. The model predicts that asymmetries in the conductance/permeability properties of the hemichannels (also cast as Donnan potentials) will produce either an accumulation or a depletion of ions within the channel, depending on voltage polarity, that

  15. Enhancing the photoelectric effect with a potential-programmed molecular rectifier.

    PubMed

    Imaoka, Takane; Ueda, Hiroaki; Yamamoto, Kimihisa

    2012-05-23

    Dendrimer-based electron rectifiers were applied to photoconducting devices. A remarkable enhancement of the photocurrent response was observed when a zinc porphyrin as the photosensitizer was embedded in the dendritic phenylazomethine (DPA) architecture. The dendrimer-based sensitizer exhibited a 20-fold higher current response than the non-dendritic zinc porphyrin. In sharp contrast, a similar application of the dendrimer with poly(vinylcarbazole) as the electron donor resulted in a decreased response. This is consistent with the idea that the DPA facilitates electron transfer from the core to its periphery along a potential gradient, as predicted by density functional theory calculations.

  16. Comparison between Phase-Shift Full-Bridge Converters with Noncoupled and Coupled Current-Doubler Rectifier

    PubMed Central

    Tsai, Cheng-Tao; Tseng, Sheng-Yu

    2013-01-01

    This paper presents comparison between phase-shift full-bridge converters with noncoupled and coupled current-doubler rectifier. In high current capability and high step-down voltage conversion, a phase-shift full-bridge converter with a conventional current-doubler rectifier has the common limitations of extremely low duty ratio and high component stresses. To overcome these limitations, a phase-shift full-bridge converter with a noncoupled current-doubler rectifier (NCDR) or a coupled current-doubler rectifier (CCDR) is, respectively, proposed and implemented. In this study, performance analysis and efficiency obtained from a 500 W phase-shift full-bridge converter with two improved current-doubler rectifiers are presented and compared. From their prototypes, experimental results have verified that the phase-shift full-bridge converter with NCDR has optimal duty ratio, lower component stresses, and output current ripple. In component count and efficiency comparison, CCDR has fewer components and higher efficiency at full load condition. For small size and high efficiency requirements, CCDR is relatively suitable for high step-down voltage and high efficiency applications. PMID:24381521

  17. Silicon micro-mold

    DOEpatents

    Morales, Alfredo M.

    2006-10-24

    The present invention describes a method for rapidly fabricating a robust 3-dimensional silicon-mold for use in preparing complex metal micro-components. The process begins by depositing a conductive metal layer onto one surface of a silicon wafer. A thin photoresist and a standard lithographic mask are then used to transfer a trace image pattern onto the opposite surface of the wafer by exposing and developing the resist. The exposed portion of the silicon substrate is anisotropically etched through the wafer thickness down to conductive metal layer to provide an etched pattern consisting of a series of rectilinear channels and recesses in the silicon which serve as the silicon micro-mold. Microcomponents are prepared with this mold by first filling the mold channels and recesses with a metal deposit, typically by electroplating, and then removing the silicon micro-mold by chemical etching.

  18. Growth of silicon bump induced by swift heavy ion at the silicon oxide-silicon interface

    SciTech Connect

    Carlotti, J.-F.; Touboul, A.D.; Ramonda, M.; Caussanel, M.; Guasch, C.; Bonnet, J.; Gasiot, J.

    2006-01-23

    Thin silicon oxide layers on silicon substrates are investigated by scanning probe microscopy before and after irradiation with 210 MeV Au+ ions. After irradiation and complete chemical etching of the silicon oxide layer, silicon bumps grown on the silicon surface are observed. It is shown that each impinging ion induces one silicon bump at the interface. This observation is consistent with the thermal spike theory. Ion energy loss is transferred to the oxide and induces local melting. Silicon-bump formation is favored when the oxide and oxide-silicon interface are silicon rich.

  19. Highly porous silicon membranes fabricated from silicon nitride/silicon stacks.

    PubMed

    Qi, Chengzhu; Striemer, Christopher C; Gaborski, Thomas R; McGrath, James L; Fauchet, Philippe M

    2014-07-23

    Nanopore formation in silicon films has previously been demonstrated using rapid thermal crystallization of ultrathin (15 nm) amorphous Si films sandwiched between nm-thick SiO2 layers. In this work, the silicon dioxide barrier layers are replaced with silicon nitride, resulting in nanoporous silicon films with unprecedented pore density and novel morphology. Four different thin film stack systems including silicon nitride/silicon/silicon nitride (NSN), silicon dioxide/silicon/silicon nitride (OSN), silicon nitride/silicon/silicon dioxide (NSO), and silicon dioxide/silicon/silicon dioxide (OSO) are tested under different annealing temperatures. Generally the pore size, pore density, and porosity positively correlate with the annealing temperature for all four systems. The NSN system yields substantially higher porosity and pore density than the OSO system, with the OSN and NSO stack characteristics fallings between these extremes. The higher porosity of the Si membrane in the NSN stack is primarily due to the pore formation enhancement in the Si film. It is hypothesized that this could result from the interfacial energy difference between the silicon/silicon nitride and silicon/silicon dioxide, which influences the Si crystallization process.

  20. A randomised controlled trial of the effectiveness of soft silicone multi-layered foam dressings in the prevention of sacral and heel pressure ulcers in trauma and critically ill patients: the border trial.

    PubMed

    Santamaria, Nick; Gerdtz, Marie; Sage, Sarah; McCann, Jane; Freeman, Amy; Vassiliou, Theresa; De Vincentis, Stephanie; Ng, Ai Wei; Manias, Elizabeth; Liu, Wei; Knott, Jonathan

    2015-06-01

    The prevention of hospital acquired pressure ulcers in critically ill patients remains a significant clinical challenge. The aim of this trial was to investigate the effectiveness of multi-layered soft silicone foam dressings in preventing intensive care unit (ICU) pressure ulcers when applied in the emergency department to 440 trauma and critically ill patients. Intervention group patients (n = 219) had Mepilex(®) Border Sacrum and Mepilex(®) Heel dressings applied in the emergency department and maintained throughout their ICU stay. Results revealed that there were significantly fewer patients with pressure ulcers in the intervention group compared to the control group (5 versus 20, P = 0·001). This represented a 10% difference in incidence between the groups (3·1% versus 13·1%) and a number needed to treat of ten patients to prevent one pressure ulcer. Overall there were fewer sacral (2 versus 8, P = 0·05) and heel pressure ulcers (5 versus 19, P = 0·002) and pressure injuries overall (7 versus 27, P = 0·002) in interventions than in controls. The time to injury survival analysis indicated that intervention group patients had a hazard ratio of 0·19 (P = 0·002) compared to control group patients. We conclude that multi-layered soft silicone foam dressings are effective in preventing pressure ulcers in critically ill patients when applied in the emergency department prior to ICU transfer.