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Sample records for silicon controlled rectifier

  1. Silicon controlled rectifier (SCR) compact modeling based on VBIC and Gummel-Poon models

    NASA Astrophysics Data System (ADS)

    Lou, Lifang; Liou, Juin J.; Dong, Shurong; Han, Yan

    2009-02-01

    Silicon controlled rectifier (SCR) is frequently used for electrostatic discharge (ESD) protection applications. For computer-aided design purposes, a macromodel can be constructed for such a device, but a model for the NPN and PNP bipolar transistors imbedded in the SCR is required in the macromodel development. In the paper, we use both the Vertical Bipolar Inter-Company (VBIC) and SPICE Gummel-Poon (SGP) models for these bipolar transistors and compare the perspective macromodel results. Measurements obtained from the transmission line pulsing (TLP) tester are also included to assess the suitability and pros and cons of the VBIC and SGP models for the SCR ESD modeling.

  2. Understanding of self-terminating pulse generation using silicon controlled rectifier and RC load

    NASA Astrophysics Data System (ADS)

    Chang, Chris; Alves, Fabio; Karunasiri, Gamani

    2016-01-01

    Recently a silicon controlled rectifier (SCR)-based circuit that generates self-terminating voltage pulses was employed for the detection of light and ionizing radiation in pulse mode. The circuit consisted of a SCR connected in series with a RC load and DC bias. In this paper, we report the investigation of the physics underlying the pulsing mechanism of the SCR-based. It was found that during the switching of SCR, the voltage across the capacitor increased beyond that of the DC bias, thus generating a reverse current in the circuit, which helped to turn the SCR off. The pulsing was found to be sustainable only for a specific range of RC values depending on the SCR's intrinsic turn-on/off times. The findings of this work will help to design optimum SCR based circuits for pulse mode detection of light and ionizing radiation without external amplification circuitry.

  3. Road load simulator tests of the Gould Phase I functional model silicon controlled rectifier ac motor controller for electric vehicles

    SciTech Connect

    Gourash, F.

    1984-02-01

    This report presents the test results for a functional model ac motor controller for electric vehicles and a three-phase induction motor which were dynamically tested on the Lewis Research Center road load simulator. Results show that the controller has the capability to meet the SAE-J227a D cycle test schedule and to accelerate a 1576-kg (3456-lb) simulated vehicle to a cruise speed of 88.5 km/hr (55 mph). Combined motor controller efficiency is 72 percent and the power inverter efficiency alone is 89 percent for the cruise region of the D cycle. Steady state test results for motoring, regeneration, and thermal data obtained by operating the simulator as a conventional dynamometer are in agreement with the contractor's previously reported data. The regeneration test results indicate that a reduction in energy requirements for urban driving cycles is attainable with regenerative braking. Test results and data in this report serve as a data base for further development of ac motor controllers and propulsion systems for electric vehicles. The controller uses state-of-the-art silicon controlled rectifier (SCR) power semiconductors and microprocessor-based logic and control circuitry. The controller was developed by Gould Laboratories under a Lewis contract for the Department of Energy's Electric and Hybrid Vehicle program.

  4. Road load simulator tests of the Gould phase 1 functional model silicon controlled rectifier ac motor controller for electric vehicles

    NASA Technical Reports Server (NTRS)

    Gourash, F.

    1984-01-01

    The test results for a functional model ac motor controller for electric vehicles and a three-phase induction motor which were dynamically tested on the Lewis Research Center road load simulator are presented. Results show that the controller has the capability to meet the SAE-J227a D cycle test schedule and to accelerate a 1576-kg (3456-lb) simulated vehicle to a cruise speed of 88.5 km/hr (55 mph). Combined motor controller efficiency is 72 percent and the power inverter efficiency alone is 89 percent for the cruise region of the D cycle. Steady state test results for motoring, regeneration, and thermal data obtained by operating the simulator as a conventional dynamometer are in agreement with the contractor's previously reported data. The regeneration test results indicate that a reduction in energy requirements for urban driving cycles is attainable with regenerative braking. Test results and data in this report serve as a data base for further development of ac motor controllers and propulsion systems for electric vehicles. The controller uses state-of-the-art silicon controlled rectifier (SCR) power semiconductors and microprocessor-based logic and control circuitry. The controller was developed by Gould Laboratories under a Lewis contract for the Department of Energy's Electric and Hybrid Vehicle program.

  5. Polarization-controlled tunable rectifying behaviors in highly oriented (K,Na)NbO3/LaNiO3 heterostructures on silicon

    NASA Astrophysics Data System (ADS)

    Xu, Hanni; Liu, Yi; Xu, Bo; Xia, Yidong; Wang, Genshui; Yin, Jiang; Liu, Zhiguo

    2016-09-01

    We report polarization-controlled tunable rectifying behaviors in (K,Na)NbO3 (KNN)/LaNiO3 (LNO) heterostructures on silicon. The heterostructure shows a forward diode behavior at both the high resistance state and the low resistance state. The amplitude dependent rectifying features are attributed to the ferroelectric modulation effect on both the width of the depletion region and the height of the potential barrier at the KNN/LNO interface. By controlling the domain configurations using the writing voltage, the rectifying behaviors can be regulated and immediate states can be tuned. Our work shows the potential applications of KNN films in ferroelectric memristors.

  6. High holding voltage segmentation stacking silicon-controlled-rectifier structure with field implant as body ties blocking layer

    NASA Astrophysics Data System (ADS)

    Yen, Shiang-Shiou; Cheng, Chun-Hu; Lan, Yu-Pin; Chiu, Yu-Chien; Fan, Chia-Chi; Hsu, Hsiao-Hsuan; Chang, Shao-Chin; Jiang, Zhe-Wei; Hung, Li-Yue; Tsai, Chi-Chung; Chang, Chun-Yen

    2016-04-01

    High electrostatic discharge (ESD) protection robustness and good transient-induced latchup immunity are two important issues for high voltage integrate circuit application. In this study, we report a high-voltage-n-type-field (HVNF) implantation to act as the body ties blocking layer in segmented topology silicon-controlled-rectifier (SCR) structure in 0.11 µm 32 V high voltage process. This body ties blocking layer eliminate the elevated triggered voltage in segmented technique. Using a large resistance as shunt resistor in resistor assisted triggered SCRs stacking structure, the double snapback phenomenon is eliminate. The series SCR could be decoupled a sufficient voltage drop to turned-on when a very low current flow through the shunt resistor. The holding voltage and the failure current of 22 V and 3.4 A are achieved in the best condition of segmented topology SCR stacking structure, respectively. It improves the latchup immunity at high voltage ICs application. On the other hand, the triggered voltage almost keep the same value which is identical to SCR single cell without using segmented topology.

  7. Road load simulator tests of the Gould phase 1 functional model silicon controlled rectifier ac motor controller for electric vehicles. Final Report

    SciTech Connect

    Gourash, F.

    1984-02-01

    The test results for a functional model ac motor controller for electric vehicles and a three-phase induction motor which were dynamically tested on the Lewis Research Center road load simulator are presented. Results show that the controller has the capability to meet the SAE-J227a D cycle test schedule and to accelerate a 1576-kg (3456-lb) simulated vehicle to a cruise speed of 88.5 km/hr (55 mph). Combined motor controller efficiency is 72 percent and the power inverter efficiency alone is 89 percent for the cruise region of the D cycle. Steady state test results for motoring, regeneration, and thermal data obtained by operating the simulator as a conventional dynamometer are in agreement with the contractor's previously reported data. The regeneration test results indicate that a reduction in energy requirements for urban driving cycles is attainable with regenerative braking. Test results and data in this report serve as a data base for further development of ac motor controllers and propulsion systems for electric vehicles. The controller uses state-of-the-art silicon controlled rectifier (SCR) power semiconductors and microprocessor-based logic and control circuitry. The controller was developed by Gould Laboratories under a Lewis contract for the Department of Energy's Electric and Hybrid Vehicle program.

  8. Silicon Carbide High-Temperature Power Rectifiers Fabricated and Characterized

    NASA Technical Reports Server (NTRS)

    1996-01-01

    The High Temperature Integrated Electronics and Sensors (HTIES) team at the NASA Lewis Research Center is developing silicon carbide (SiC) for use in harsh conditions where silicon, the semiconductor used in nearly all of today's electronics, cannot function. Silicon carbide's demonstrated ability to function under extreme high-temperature, high power, and/or high-radiation conditions will enable significant improvements to a far ranging variety of applications and systems. These improvements range from improved high-voltage switching for energy savings in public electric power distribution and electric vehicles, to more powerful microwave electronics for radar and cellular communications, to sensors and controls for cleaner-burning, more fuel-efficient jet aircraft and automobile engines. In the case of jet engines, uncooled operation of 300 to 600 C SiC power actuator electronics mounted in key high-temperature areas would greatly enhance system performance and reliability. Because silicon cannot function at these elevated temperatures, the semiconductor device circuit components must be made of SiC. Lewis' HTIES group recently fabricated and characterized high-temperature SiC rectifier diodes whose record-breaking characteristics represent significant progress toward the realization of advanced high-temperature actuator control circuits. The first figure illustrates the 600 C probe-testing of a Lewis SiC pn-junction rectifier diode sitting on top of a glowing red-hot heating element. The second figure shows the current-versus voltage rectifying characteristics recorded at 600 C. At this high temperature, the diodes were able to "turn-on" to conduct 4 A of current when forward biased, and yet block the flow of current ($quot;turn-off") when reverse biases as high as 150 V were applied. This device represents a new record for semiconductor device operation, in that no previous semiconductor electronic device has ever simultaneously demonstrated 600 C functionality

  9. Apparatus for controlling the firing of rectifiers in polyphase rectifying circuits

    DOEpatents

    Yarema, R.J.

    1979-09-18

    A polyphase rectifier is controlled with precision by a circuit that filters and shifts a reference signal associated with each phase and that starts a ramp signal at a zero crossing of the shifted reference signal. The difference between the ramp signal and an external trigger signal is used to generate a pulse that switches power rectifiers into conduction. The circuit reduces effects of variations that introduce subharmonics into a rectified signal and it can be used for constant or time-varying external trigger signals.

  10. An Inductorless Self-Controlled Rectifier for Piezoelectric Energy Harvesting.

    PubMed

    Lu, Shaohua; Boussaid, Farid

    2015-01-01

    This paper presents a high-efficiency inductorless self-controlled rectifier for piezoelectric energy harvesting. High efficiency is achieved by discharging the piezoelectric device (PD) capacitance each time the current produced by the PD changes polarity. This is achieved automatically without the use of delay lines, thereby making the proposed circuit compatible with any type of PD. In addition, the proposed rectifier alleviates the need for an inductor, making it suitable for on-chip integration. Reported experimental results show that the proposed rectifier can harvest up to 3.9 times more energy than a full wave bridge rectifier. PMID:26610492

  11. An Inductorless Self-Controlled Rectifier for Piezoelectric Energy Harvesting.

    PubMed

    Lu, Shaohua; Boussaid, Farid

    2015-11-19

    This paper presents a high-efficiency inductorless self-controlled rectifier for piezoelectric energy harvesting. High efficiency is achieved by discharging the piezoelectric device (PD) capacitance each time the current produced by the PD changes polarity. This is achieved automatically without the use of delay lines, thereby making the proposed circuit compatible with any type of PD. In addition, the proposed rectifier alleviates the need for an inductor, making it suitable for on-chip integration. Reported experimental results show that the proposed rectifier can harvest up to 3.9 times more energy than a full wave bridge rectifier.

  12. An Inductorless Self-Controlled Rectifier for Piezoelectric Energy Harvesting

    PubMed Central

    Lu, Shaohua; Boussaid, Farid

    2015-01-01

    This paper presents a high-efficiency inductorless self-controlled rectifier for piezoelectric energy harvesting. High efficiency is achieved by discharging the piezoelectric device (PD) capacitance each time the current produced by the PD changes polarity. This is achieved automatically without the use of delay lines, thereby making the proposed circuit compatible with any type of PD. In addition, the proposed rectifier alleviates the need for an inductor, making it suitable for on-chip integration. Reported experimental results show that the proposed rectifier can harvest up to 3.9 times more energy than a full wave bridge rectifier. PMID:26610492

  13. Improved control configuration of PWM rectifiers based on neuro-fuzzy controller.

    PubMed

    Acikgoz, Hakan; Kececioglu, O Fatih; Gani, Ahmet; Yildiz, Ceyhun; Sekkeli, Mustafa

    2016-01-01

    It is well-known that rectifiers are used widely in many applications required AC/DC transformation. With technological advances, many studies are performed for AC/DC converters and many control methods are proposed in order to improve the performance of these rectifiers in recent years. Pulse width modulation (PWM) based rectifiers are one of the most popular rectifier types. PWM rectifiers have lower input current harmonics and higher power factor compared to classical diode and thyristor rectifiers. In this study, neuro-fuzzy controller (NFC) which has robust, nonlinear structure and do not require the mathematical model of the system to be controlled has been proposed for PWM rectifiers. Three NFCs are used in control scheme of proposed PWM rectifier in order to control the dq-axis currents and DC voltage of PWM rectifier. Moreover, simulation studies are carried out to demonstrate the performance of the proposed control scheme at MATLAB/Simulink environment in terms of rise time, settling time, overshoot, power factor, total harmonic distortion and power quality. PMID:27504240

  14. Pulse-Width Control in Ladder Structure Four-Phase Rectifier for AC-Electromotive

    NASA Astrophysics Data System (ADS)

    Ivanov, V. V.; Myatez, S. V.; Langeman, E. G.; Schurov, N. I.

    2016-04-01

    Based on these studies the ways of power factor of the single-phase rectifiers operating in a single-phase AC network improving are suggested. The ladder four-phase rectifier is offered as a technical mean using a pulse-width method of controlling the rectified voltage. The pulse-width control efficiency as a way of the power factor rectifier with a ladder structure for AC electromotive improving is evaluated.

  15. Modelling a single phase voltage controlled rectifier using Laplace transforms

    NASA Technical Reports Server (NTRS)

    Kraft, L. Alan; Kankam, M. David

    1992-01-01

    The development of a 20 kHz, AC power system by NASA for large space projects has spurred a need to develop models for the equipment which will be used on these single phase systems. To date, models for the AC source (i.e., inverters) have been developed. It is the intent of this paper to develop a method to model the single phase voltage controlled rectifiers which will be attached to the AC power grid as an interface for connected loads. A modified version of EPRI's HARMFLO program is used as the shell for these models. The results obtained from the model developed in this paper are quite adequate for the analysis of problems such as voltage resonance. The unique technique presented in this paper uses the Laplace transforms to determine the harmonic content of the load current of the rectifier rather than a curve fitting technique. Laplace transforms yield the coefficient of the differential equations which model the line current to the rectifier directly.

  16. A Novel Phase-Shift Control of Semibridgeless Active Rectifier for Wireless Power Transfer

    DOE PAGES

    Colak, Kerim; Asa, Erdem; Bojarski, Mariusz; Czarkowski, Dariusz; Onar, Omer C.

    2015-05-12

    We investigated a novel phase-shift control of a semibridgeless active rectifier (S-BAR) in order to utilize the S-BAR in wireless energy transfer applications. The standard receiver-side rectifier topology is developed by replacing rectifier lower diodes with synchronous switches controlled by a phase-shifted PWM signal. Moreover, theoretical and simulation results showthat with the proposed control technique, the output quantities can be regulated without communication between the receiver and transmitter. In order to confirm the performance of the proposed converter and control, experimental results are provided using 8-, 15-, and 23-cm air gap coreless transformer which has dimension of 76 cm xmore » 76 cm, with 120-V input and the output power range of 0 to 1kW with a maximum efficiency of 94.4%.« less

  17. A Novel Phase-Shift Control of Semibridgeless Active Rectifier for Wireless Power Transfer

    SciTech Connect

    Colak, Kerim; Asa, Erdem; Bojarski, Mariusz; Czarkowski, Dariusz; Onar, Omer C.

    2015-05-12

    We investigated a novel phase-shift control of a semibridgeless active rectifier (S-BAR) in order to utilize the S-BAR in wireless energy transfer applications. The standard receiver-side rectifier topology is developed by replacing rectifier lower diodes with synchronous switches controlled by a phase-shifted PWM signal. Moreover, theoretical and simulation results showthat with the proposed control technique, the output quantities can be regulated without communication between the receiver and transmitter. In order to confirm the performance of the proposed converter and control, experimental results are provided using 8-, 15-, and 23-cm air gap coreless transformer which has dimension of 76 cm x 76 cm, with 120-V input and the output power range of 0 to 1kW with a maximum efficiency of 94.4%.

  18. WASTE MINIMIZATION ASSESSMENT FOR A MANUFACTURER OF SILICON-CONTROLLED RECTIFIERS AND SCHOTTKY RECTIFIERS

    EPA Science Inventory

    The U.S. Environmental Protection Agency (EPA) has funded a pilot project to assist small- and medium-size manufacturers who want to minimize their generation of waste but who lack the expertise to do so. In an effort to assist these manufacturers Waste Minimization Assessment Ce...

  19. High-performance digital triggering system for phase-controlled rectifiers

    SciTech Connect

    Olsen, R.E.

    1983-01-01

    The larger power supplies used to power accelerator magnets are most commonly polyphase rectifiers using phase control. While this method is capable of handling impressive amounts of power, it suffers from one serious disadvantage, namely that of subharmonic ripple. Since the stability of the stored beam depends to a considerable extent on the regulation of the current in the bending magnets, subharmonic ripple, especially that of low frequency, can have a detrimental effect. At the NSLS, we have constructed a 12-pulse, phase control system using digital signal processing techniques that essentially eliminates subharmonic ripple.

  20. Instantaneous Power Control of PWM Rectifier Using Hysteresis Regulator with Frequency Characteristic

    NASA Astrophysics Data System (ADS)

    Noguchi, Toshihiko; Sano, Kohji

    This paper proposes a hysteresis regulator with a frequency characteristic, which reduces specific harmonic power in a direct power control system of a current-source PWM rectifier. The method virtually adjusts the hysteresis bandwidth in association with frequencies of the power pulsation; hence the regulator is capable to filter specific frequency components of the input current as well as the power. The paper describes a theoretical aspect of the proposed approach, and presents some experimental results of a particular case, where the 5th and the 7th harmonic input currents are mainly suppressed by eliminating the 6th harmonic component of the active power.

  1. An Integrated Power-Efficient Active Rectifier With Offset-Controlled High Speed Comparators for Inductively Powered Applications

    PubMed Central

    Lee, Hyung-Min; Ghovanloo, Maysam

    2011-01-01

    We present an active full-wave rectifier with offset-controlled high speed comparators in standard CMOS that provides high power conversion efficiency (PCE) in high frequency (HF) range for inductively powered devices. This rectifier provides much lower dropout voltage and far better PCE compared to the passive on-chip or off-chip rectifiers. The built-in offset-control functions in the comparators compensate for both turn-on and turn-off delays in the main rectifying switches, thus maximizing the forward current delivered to the load and minimizing the back current to improve the PCE. We have fabricated this active rectifier in a 0.5-μm 3M2P standard CMOS process, occupying 0.18 mm2 of chip area. With 3.8 V peak ac input at 13.56 MHz, the rectifier provides 3.12 V dc output to a 500 Ω load, resulting in the PCE of 80.2%, which is the highest measured at this frequency. In addition, overvoltage protection (OVP) as safety measure and built-in back telemetry capabilities have been incorporated in our design using detuning and load shift keying (LSK) techniques, respectively, and tested. PMID:22174666

  2. Structural basis of control of inward rectifier Kir2 channel gating by bulk anionic phospholipids.

    PubMed

    Lee, Sun-Joo; Ren, Feifei; Zangerl-Plessl, Eva-Maria; Heyman, Sarah; Stary-Weinzinger, Anna; Yuan, Peng; Nichols, Colin G

    2016-09-01

    Inward rectifier potassium (Kir) channel activity is controlled by plasma membrane lipids. Phosphatidylinositol-4,5-bisphosphate (PIP2) binding to a primary site is required for opening of classic inward rectifier Kir2.1 and Kir2.2 channels, but interaction of bulk anionic phospholipid (PL(-)) with a distinct second site is required for high PIP2 sensitivity. Here we show that introduction of a lipid-partitioning tryptophan at the second site (K62W) generates high PIP2 sensitivity, even in the absence of PL(-) Furthermore, high-resolution x-ray crystal structures of Kir2.2[K62W], with or without added PIP2 (2.8- and 2.0-Å resolution, respectively), reveal tight tethering of the C-terminal domain (CTD) to the transmembrane domain (TMD) in each condition. Our results suggest a refined model for phospholipid gating in which PL(-) binding at the second site pulls the CTD toward the membrane, inducing the formation of the high-affinity primary PIP2 site and explaining the positive allostery between PL(-) binding and PIP2 sensitivity. PMID:27527100

  3. Co-Design Method and Wafer-Level Packaging Technique of Thin-Film Flexible Antenna and Silicon CMOS Rectifier Chips for Wireless-Powered Neural Interface Systems

    PubMed Central

    Okabe, Kenji; Jeewan, Horagodage Prabhath; Yamagiwa, Shota; Kawano, Takeshi; Ishida, Makoto; Akita, Ippei

    2015-01-01

    In this paper, a co-design method and a wafer-level packaging technique of a flexible antenna and a CMOS rectifier chip for use in a small-sized implantable system on the brain surface are proposed. The proposed co-design method optimizes the system architecture, and can help avoid the use of external matching components, resulting in the realization of a small-size system. In addition, the technique employed to assemble a silicon large-scale integration (LSI) chip on the very thin parylene film (5 μm) enables the integration of the rectifier circuits and the flexible antenna (rectenna). In the demonstration of wireless power transmission (WPT), the fabricated flexible rectenna achieved a maximum efficiency of 0.497% with a distance of 3 cm between antennas. In addition, WPT with radio waves allows a misalignment of 185% against antenna size, implying that the misalignment has a less effect on the WPT characteristics compared with electromagnetic induction. PMID:26694407

  4. Co-Design Method and Wafer-Level Packaging Technique of Thin-Film Flexible Antenna and Silicon CMOS Rectifier Chips for Wireless-Powered Neural Interface Systems.

    PubMed

    Okabe, Kenji; Jeewan, Horagodage Prabhath; Yamagiwa, Shota; Kawano, Takeshi; Ishida, Makoto; Akita, Ippei

    2015-01-01

    In this paper, a co-design method and a wafer-level packaging technique of a flexible antenna and a CMOS rectifier chip for use in a small-sized implantable system on the brain surface are proposed. The proposed co-design method optimizes the system architecture, and can help avoid the use of external matching components, resulting in the realization of a small-size system. In addition, the technique employed to assemble a silicon large-scale integration (LSI) chip on the very thin parylene film (5 μm) enables the integration of the rectifier circuits and the flexible antenna (rectenna). In the demonstration of wireless power transmission (WPT), the fabricated flexible rectenna achieved a maximum efficiency of 0.497% with a distance of 3 cm between antennas. In addition, WPT with radio waves allows a misalignment of 185% against antenna size, implying that the misalignment has a less effect on the WPT characteristics compared with electromagnetic induction. PMID:26694407

  5. Rectifier cabinet static breaker

    SciTech Connect

    Costantino, R.A.; Gliebe, R.J.

    1990-01-01

    A rectifier cabinet static breaker replaces a blocking diode pair with an SCR and the installation of a power transistor in parallel with the latch contactor to commutate the SCR to the off state. The SCR serves as a static breaker with fast turnoff capability providing an alternative way of achieving reactor scram in addition to performing the function of the replaced blocking diodes. The control circuitry for the rectifier cabinet static breaker includes on-line test capability and an LED indicator light to denote successful test completion. Current limit circuitry provides high-speed protection in the event of overload.

  6. Rectifier cabinet static breaker

    DOEpatents

    Costantino, Jr, Roger A.; Gliebe, Ronald J.

    1992-09-01

    A rectifier cabinet static breaker replaces a blocking diode pair with an SCR and the installation of a power transistor in parallel with the latch contactor to commutate the SCR to the off state. The SCR serves as a static breaker with fast turnoff capability providing an alternative way of achieving reactor scram in addition to performing the function of the replaced blocking diodes. The control circuitry for the rectifier cabinet static breaker includes on-line test capability and an LED indicator light to denote successful test completion. Current limit circuitry provides high-speed protection in the event of overload.

  7. Silicon controlled rectifier polyphase bridge inverter commutated with gate-turn-off thyristor

    NASA Technical Reports Server (NTRS)

    Edwards, Dean B. (Inventor); Rippel, Wally E. (Inventor)

    1986-01-01

    A polyphase SCR inverter (10) having N switching poles, each comprised of two SCR switches (1A, 1B; 2A, 2B . . . NA, NB) and two diodes (D1B; D1B; D2A, D2B . . . DNA, DNB) in series opposition with saturable reactors (L1A, L1B; L2A, L2B . . . LNA, LNB) connecting the junctions between the SCR switches and diodes to an output terminal (1, 2 . . . 3) is commutated with only one GTO thyristor (16) connected between the common negative terminal of a dc source and a tap of a series inductor (14) connected to the positive terminal of the dc source. A clamp winding (22) and diode (24) are provided, as is a snubber (18) which may have its capacitance (c) sized for maximum load current divided into a plurality of capacitors (C.sub.1, C.sub.2 . . . C.sub.N), each in series with an SCR switch S.sub.1, S.sub.2 . . . S.sub.N). The total capacitance may be selected by activating selected switches as a function of load current. A resistor 28 and SCR switch 26 shunt reverse current when the load acts as a generator, such as a motor while braking.

  8. Experimental design of a fuzzy controller for improving power factor of boost rectifier

    NASA Astrophysics Data System (ADS)

    Kessal, Abdelhalim; Rahmani, Lazhar; Gaubert, Jean-Paul; Mostefai, Mohammed

    2012-12-01

    This article presents the design and the implementation of dSPACE DS1104 controller board-based PI and fuzzy logic peak current-mode controllers in the voltage loop and two controllers in the current loop based first on a standard fixed hysteresis band control, followed by a variable hysteresis band control to achieve constant switching frequency for a single-phase active power factor corrector in the continuous conduction mode. All these controllers have been verified via simulation in Simulink and a real-time implementation is performed on an experimental test bench utilising a rapid prototyping tool. The controllers are experimentally compared for steady-state performance and transient response. It is shown that the PI and fuzzy logic controllers give a superior steady-state performance, whereas the fuzzy logic inference based controller can achieve better dynamic response than its PI counterpart under large load disturbance and plant uncertainties. Furthermore, the variable hysteresis band control in the current loop gives a low total harmonic distortion of the input current compared to a standard fixed hysteresis band control.

  9. Voltage-controlled oscillator

    NASA Technical Reports Server (NTRS)

    Durand, J. L.

    1971-01-01

    Oscillator generates symmetrical triangular waveform when inverting and noninverting inputs are equal. Oscillator portion of circuit has integrated circuit, high-performance operational amplifier wired as differential integrator, and two silicon controlled rectifiers.

  10. Controlled Adhesion of Silicone Elastomer Surfaces

    NASA Astrophysics Data System (ADS)

    Owen, Michael

    2000-03-01

    Opportunities exist for controllably enhancing the adhesion of silicone surfaces, ranging from modest enhancement of release force levels of pressure-sensitive adhesive (PSA) release liners by incorporation of adhesion promoters known as high release additives (HRA), to permanent bonding of silicone elastomers using surface modification techniques such as plasma or corona treatment. Although only a part of the complex interaction of factors contributing to adhesion, surface properties such as wettability are a critical component in the understanding and control of release and adhesion phenomena. Surface characterization studies of low-surface-energy silicones before and after various adhesion modification strategies are reviewed. The silicones include polydimethylsiloxane (PDMS) and fluorosiloxane elastomers and coatings. Techniques used include contact angle, the Johnson, Kendall and Roberts (JKR) contact mechanics approach, scanning electron microscopy (SEM), atomic force microscopy (AFM), and x-ray photoelectron spectroscopy (XPS). Topics addressed are: use of HRA in PDMS release liners, the interaction of PDMS PSAs with polytetrafluoroethylene (PTFE), and the effect of plasma treatment on PDMS and fluorosiloxane surfaces.

  11. Control of silicon nanoparticle size embedded in silicon oxynitride dielectric matrix

    SciTech Connect

    Ehrhardt, F.; Ferblantier, G.; Muller, D.; Slaoui, A.; Ulhaq-Bouillet, C.; Rinnert, H.

    2013-07-21

    In this study, silicon rich silicon oxynitride layers containing more than 15% nitrogen were deposited by electron cyclotron resonance assisted plasma enhanced vapor deposition in order to form silicon nanoparticles after a high temperature thermal annealing. The effect of the flows of the precursor gases on the composition and the structural properties of the layers was assessed by Rutherford backscattering spectroscopy, elastic recoil detection analysis, and infrared spectroscopic measurements. The morphological and crystallinity properties were investigated by energy filtered transmission electron microscopy and Raman spectroscopy. We show that the excess of silicon in the silicon oxynitride layer controls the silicon nanoparticles size. On the other hand, the crystalline fraction of particles is found to be strongly correlated to the nanoparticle size. Finally, the photoluminescence measurements show that it is also possible to tune the photoluminescence peak position between 400 and 800 nm and its intensity by changing the silicon excess in the silicon rich silicon oxynitride matrix.

  12. Curvature Control of Silicon Microlens for THz Dielectric Antenna

    NASA Technical Reports Server (NTRS)

    Lee, Choonsup; Chattopadhyay, Goutam; Cooper, Ken; Mehdi, Imran

    2012-01-01

    We have controlled the curvature of silicon microlens by changing the amount of photoresist in order to microfabricate hemispherical silicon microlens which can improve the directivity and reduce substrate mode losses.

  13. The inwardly rectifying K+ channel KIR7.1 controls uterine excitability throughout pregnancy.

    PubMed

    McCloskey, Conor; Rada, Cara; Bailey, Elizabeth; McCavera, Samantha; van den Berg, Hugo A; Atia, Jolene; Rand, David A; Shmygol, Anatoly; Chan, Yi-Wah; Quenby, Siobhan; Brosens, Jan J; Vatish, Manu; Zhang, Jie; Denton, Jerod S; Taggart, Michael J; Kettleborough, Catherine; Tickle, David; Jerman, Jeff; Wright, Paul; Dale, Timothy; Kanumilli, Srinivasan; Trezise, Derek J; Thornton, Steve; Brown, Pamela; Catalano, Roberto; Lin, Nan; England, Sarah K; Blanks, Andrew M

    2014-09-01

    Abnormal uterine activity in pregnancy causes a range of important clinical disorders, including preterm birth, dysfunctional labour and post-partum haemorrhage. Uterine contractile patterns are controlled by the generation of complex electrical signals at the myometrial smooth muscle plasma membrane. To identify novel targets to treat conditions associated with uterine dysfunction, we undertook a genome-wide screen of potassium channels that are enriched in myometrial smooth muscle. Computational modelling identified Kir7.1 as potentially important in regulating uterine excitability during pregnancy. We demonstrate Kir7.1 current hyper-polarizes uterine myocytes and promotes quiescence during gestation. Labour is associated with a decline, but not loss, of Kir7.1 expression. Knockdown of Kir7.1 by lentiviral expression of miRNA was sufficient to increase uterine contractile force and duration significantly. Conversely, overexpression of Kir7.1 inhibited uterine contractility. Finally, we demonstrate that the Kir7.1 inhibitor VU590 as well as novel derivative compounds induces profound, long-lasting contractions in mouse and human myometrium; the activity of these inhibitors exceeds that of other uterotonic drugs. We conclude Kir7.1 regulates the transition from quiescence to contractions in the pregnant uterus and may be a target for therapies to control uterine contractility.

  14. Vascular inward rectifier K+ channels as external K+ sensors in the control of cerebral blood flow.

    PubMed

    Longden, Thomas A; Nelson, Mark T

    2015-04-01

    For decades it has been known that external K(+) ions are rapid and potent vasodilators that increase CBF. Recent studies have implicated the local release of K(+) from astrocytic endfeet-which encase the entirety of the parenchymal vasculature-in the dynamic regulation of local CBF during NVC. It has been proposed that the activation of KIR channels in the vascular wall by external K(+) is a central component of these hyperemic responses; however, a number of significant gaps in our knowledge remain. Here, we explore the concept that vascular KIR channels are the major extracellular K(+) sensors in the control of CBF. We propose that K(+) is an ideal mediator of NVC, and discuss KIR channels as effectors that produce rapid hyperpolarization and robust vasodilation of cerebral arterioles. We provide evidence that KIR channels, of the KIR 2 subtype in particular, are present in both the endothelial and SM cells of parenchymal arterioles and propose that this dual positioning of KIR 2 channels increases the robustness of the vasodilation to external K(+), enables the endothelium to be actively engaged in NVC, and permits electrical signaling through the endothelial syncytium to promote upstream vasodilation to modulate CBF.

  15. Optically controlled quadrature coupler on silicon substrate

    NASA Astrophysics Data System (ADS)

    Bhadauria, Avanish; Sharma, Sonia; Sonania, Shikha; Akhtar, Jamil

    2016-03-01

    In this paper, we have proposed and studied an optically controlled quadrature coupler fabricated on silicon substrate. The optically controlled quadrature coupler can be realized by terminating its coupled or through ports by optically induced load. Simulation and experimental results show that by varying optical intensity, we can control the phase and amplitude of output RF signal and can realize optically controlled reflection type attenuator, reflection type phase-shifter and ultrafast switches. The new kind of proposed device can be useful for ultra-fast signal processing and modulation schemes in high speed communication especially in QPSK modulation. The optical control has several advantages over conventional techniques such as MEMS and other semiconductor switching, which have several inherent disadvantages and limitations like low response time, low power handling capacity, device parasitic and non-linearity.

  16. Noise Properties of Rectifying Nanopores

    SciTech Connect

    Powell, M R; Sa, N; Davenport, M; Healy, K; Vlassiouk, I; Letant, S E; Baker, L A; Siwy, Z S

    2011-02-18

    Ion currents through three types of rectifying nanoporous structures are studied and compared for the first time: conically shaped polymer nanopores, glass nanopipettes, and silicon nitride nanopores. Time signals of ion currents are analyzed by power spectrum. We focus on the low-frequency range where the power spectrum magnitude scales with frequency, f, as 1/f. Glass nanopipettes and polymer nanopores exhibit non-equilibrium 1/f noise, thus the normalized power spectrum depends on the voltage polarity and magnitude. In contrast, 1/f noise in rectifying silicon nitride nanopores is of equilibrium character. Various mechanisms underlying the voltage-dependent 1/f noise are explored and discussed, including intrinsic pore wall dynamics, and formation of vortices and non-linear flow patterns in the pore. Experimental data are supported by modeling of ion currents based on the coupled Poisson-Nernst-Planck and Navier Stokes equations. We conclude that the voltage-dependent 1/f noise observed in polymer and glass asymmetric nanopores might result from high and asymmetric electric fields inducing secondary effects in the pore such as enhanced water dissociation.

  17. K+ channels of stomatal guard cells. Characteristics of the inward rectifier and its control by pH

    PubMed Central

    1992-01-01

    Intracellular microelectrode recordings and a two-electrode voltage clamp have been used to characterize the current carried by inward rectifying K+ channels of stomatal guard cells from the broadbean, Vicia faba L. Superficially, the current displayed many features common to inward rectifiers of neuromuscular and egg cell membranes. In millimolar external K+ concentrations (Ko+), it activated on hyperpolarization with half-times of 100-200 ms, showed no evidence of time- or voltage-dependent inactivation, and deactivated rapidly (tau approximately 10 ms) on clamping to 0 mV. Steady-state conductance- voltage characteristics indicated an apparent gating charge of 1.3-1.6. Current reversal showed a Nernstian dependence on Ko+ over the range 3- 30 mM, and the inward rectifier was found to be highly selective for K+ over other monovalent cations (K+ greater than Rb+ greater than Cs+ much greater than Na+). Unlike the inward rectifiers of animal membranes, the current was blocked by charybdotoxin and alpha- dendrotoxin (Kd much less than 50 nM), as well as by tetraethylammonium chloride (K1/2 = 9.1 mM); gating of the guard cell K+ current was fixed to voltages near -120 mV, independent of Ko+, and the current activated only with supramillimolar K+ outside (EK+ greater than -120 mV). Most striking, however, was inward rectifier sensitivity to [H+] with the K+ current activated reversibly by mild acid external pH. Current through the K+ inward rectifier was found to be largely independent of intracellular pH and the current reversal (equilibrium) potential was unaffected by pHo from 7.4 to 5.5. By contrast, current through the K+ outward rectifier previously characterized in these cells (1988. J. Membr. Biol. 102:235) was largely insensitive to pHo, but was blocked reversibly by acid-going intracellular pH. The action of pHo on the K+ inward rectifier could not be mimicked by extracellular Ca2+ for which changes in activation, deactivation, and conductance were consonant

  18. Artificial neural networks for control of a grid-connected rectifier/inverter under disturbance, dynamic and power converter switching conditions.

    PubMed

    Li, Shuhui; Fairbank, Michael; Johnson, Cameron; Wunsch, Donald C; Alonso, Eduardo; Proaño, Julio L

    2014-04-01

    Three-phase grid-connected converters are widely used in renewable and electric power system applications. Traditionally, grid-connected converters are controlled with standard decoupled d-q vector control mechanisms. However, recent studies indicate that such mechanisms show limitations in their applicability to dynamic systems. This paper investigates how to mitigate such restrictions using a neural network to control a grid-connected rectifier/inverter. The neural network implements a dynamic programming algorithm and is trained by using back-propagation through time. To enhance performance and stability under disturbance, additional strategies are adopted, including the use of integrals of error signals to the network inputs and the introduction of grid disturbance voltage to the outputs of a well-trained network. The performance of the neural-network controller is studied under typical vector control conditions and compared against conventional vector control methods, which demonstrates that the neural vector control strategy proposed in this paper is effective. Even in dynamic and power converter switching environments, the neural vector controller shows strong ability to trace rapidly changing reference commands, tolerate system disturbances, and satisfy control requirements for a faulted power system.

  19. Controllable deformation of silicon nanowires with strain up to 24%

    SciTech Connect

    Walavalkar, Sameer S.; Homyk, Andrew P.; Henry, M. David; Scherer, Axel

    2010-06-15

    Fabricated silicon nanostructures demonstrate mechanical properties unlike their macroscopic counterparts. Here we use a force mediating polymer to controllably and reversibly deform silicon nanowires. This technique is demonstrated on multiple nanowire configurations, which undergo deformation without noticeable macroscopic damage after the polymer is removed. Calculations estimate a maximum of nearly 24% strain induced in 30 nm diameter pillars. The use of an electron activated polymer allows retention of the strained configuration without any external input. As a further illustration of this technique, we demonstrate nanoscale tweezing by capturing 300 nm alumina beads using circular arrays of these silicon nanowires.

  20. Solid state thermal rectifier

    DOEpatents

    None

    2016-07-05

    Thermal rectifiers using linear nanostructures as core thermal conductors have been fabricated. A high mass density material is added preferentially to one end of the nanostructures to produce an axially non-uniform mass distribution. The resulting nanoscale system conducts heat asymmetrically with greatest heat flow in the direction of decreasing mass density. Thermal rectification has been demonstrated for linear nanostructures that are electrical insulators, such as boron nitride nanotubes, and for nanostructures that are conductive, such as carbon nanotubes.

  1. A simple method to control nanotribology behaviors of monocrystalline silicon

    NASA Astrophysics Data System (ADS)

    Wang, X. D.; Guo, J.; Chen, C.; Chen, L.; Qian, L. M.

    2016-01-01

    A simple method was proposed to control the nanotribology behaviors of monocrystalline silicon against SiO2 microsphere by adjusting relative humidity (RH). Experimental results indicated that adhesion work, friction coefficient, and nanowear of silicon against SiO2 microsphere significantly varied between 60% and 90% RH. Under 60% RH, adhesion work was 119 mN/m, and friction coefficient was about 0.53. However, adhesion work and friction coefficient decreased to ˜70 mN/m and ˜0.3 under 90% RH, respectively. An apparent wear track ˜13 nm deep formed on the silicon surface under 60% RH, whereas no obvious wear scar was observed on the silicon surface under 90% RH. Analysis indicated that such tribological behaviors were due to different water condensations on the silicon surface under 60% and 90% RH. Under 60% RH, the water that condensed on the surfaces of the silicon sample and SiO2 tip mainly consisted of ice-like water. As a result, adhesion work was enlarged by the breaking force of the ice-like water bridge in the contact area. Given that a ≡Si-O-Si≡ bonding bridge easily formed between the silicon surface and the SiO2 tip with the help of water condensation under 60% RH instead of 90% RH, the friction coefficient was large and the nanowear of the silicon sample was severe under 60% RH. These results may help elucidate the nanotribology behaviors of silicon and facilitate the tribological design of dynamic microelectromechanical systems working under humid conditions.

  2. Unimolecular rectifiers: Present status

    NASA Astrophysics Data System (ADS)

    Metzger, Robert M.

    2006-07-01

    Many experimental issues presented here must be resolved before we can really understand unimolecular rectification. Nevertheless, at the University of Alabama six unimolecular rectifiers have been studied (Fig. 1, 1- 6). Langmuir-Blodgett (LB) or Langmuir-Schaefer (LS) monolayer films of these molecules show asymmetric electrical conductivity between Au and Al electrodes. When the films are very compact (LS of 4, LB of 5), and if there is finite intramolecular charge transfer (ICT, or intervalence transfer, IVT), then the electrical behavior persists for many cycles of measurement.

  3. Quality evaluation of resistivity-controlled silicon crystals

    NASA Astrophysics Data System (ADS)

    Wang, Jong Hoe

    2006-01-01

    The segregation phenomenon of dopants causes a low production yield of silicon crystal that meets the resistivity tolerance required by device manufacturers. In order to control the macroscopic axial resistivity distribution in bulk crystal growth, numerous studies including continuous Czochralski method and double crucible technique have been studied. The simple B-P codoping method for improving the productivity of p-type silicon single-crystal growth by controlling axial specific resistivity distribution was proposed by Wang [Jpn. J. Appl. Phys. 43 (2004) 4079]. In this work, the quality of Czochralski-grown silicon single crystals with a diameter 200 mm using B-P codoping method was studied from the chemical and structural points of view. It was found that the characteristics of B-P codoped wafers including the oxygen precipitation behavior and the grown-in defects are same as that of conventional B-doped Czochralski crystals.

  4. Diameter Controlled of Carbon Nanotubes Synthesized on Nanoporous Silicon Support

    NASA Astrophysics Data System (ADS)

    Asli, N. A.; Shamsudin, M. S.; Maryam, M.; Yusop, S. F. M.; Suriani, A. B.; Rusop, M.; Abdullah, S.

    2013-06-01

    Carbon nanotubes (CNTs) have been successfully synthesized on nanoporous silicon template (NPSiT) using botanical source, camphor oil. Diameter of CNTs synthesized was controlled by pore size of NPSiT prepared by photo-electrochemical anodization method. The diameter of CNTs grown on different NPSiT corresponded to the pore diameter of NPSiT. FESEM images showed self-organized bundles of fiber-like structures of CNTs with diameter of around 20nm which were successfully grown directly on nanoporous silicon while raman spectra obtained ratio of ID/IG at 0.67.

  5. Treatment to Control Adhesion of Silicone-Based Elastomers

    NASA Technical Reports Server (NTRS)

    deGroh, Henry C., III; Puleo, Bernadette J.; Waters, Deborah L.

    2013-01-01

    Seals are used to facilitate the joining of two items, usually temporarily. At some point in the future, it is expected that the items will need to be separated. This innovation enables control of the adhesive properties of silicone-based elastomers. The innovation may also be effective on elastomers other than the silicone-based ones. A technique has been discovered that decreases the level of adhesion of silicone- based elastomers to negligible levels. The new technique causes less damage to the material compared to alternative adhesion mitigation techniques. Silicone-based elastomers are the only class of rubber-like materials that currently meet NASA s needs for various seal applications. However, silicone-based elastomers have natural inherent adhesive properties. This stickiness can be helpful, but it can frequently cause problems as well, such as when trying to get items apart. In the past, seal adhesion was not always adequately addressed, and has caused in-flight failures where seals were actually pulled from their grooves, preventing subsequent spacecraft docking until the seal was physically removed from the flange via an extravehicular activity (EVA). The primary method used in the past to lower elastomer seal adhesion has been the application of some type of lubricant or grease to the surface of the seal. A newer method uses ultraviolet (UV) radiation a mixture of UV wavelengths in the range of near ultraviolet (NUV) and vacuum ultraviolet (VUV) wavelengths.

  6. Rectified Forces in Rubidium

    NASA Astrophysics Data System (ADS)

    Grove, Timothy Todd

    The forces exerted on a three-level atom by a bichromatic standing-wave field are investigated. A theoretical analysis shows that the standing-wave dipole force can be rectified, i.e., maintain its sign over many optical wavelengths. Three systems in particular are studied: the lambda, the vee, and the cascade. Experimental results for the rubidium 5S --> 5P --> 5D cascade system are used to confirm the theory. The nearly coincident transition wavelengths for this system (780.0 nm and 776.0 nm) provide potential wells repeating at the beat wavelength (71 μm) which can accumulate laser cooled atoms. This force may have future applications in forming deep neutral atom traps as well as in the creation of new elements for atom optics. Two-color, two-photon spectroscopy of the 5D_{5/2}<=vel using the same cascade system (5S --> 5P --> 5D) was also performed.

  7. Low control-power wavelength conversion on a silicon chip.

    PubMed

    Zhao, Yun; Lombardo, David; Mathews, Jay; Agha, Imad

    2016-08-01

    We demonstrate controlled wavelength conversion on a silicon chip based on four-wave mixing Bragg scattering (FWM-BS). A total conversion efficiency of 5% is achieved with strongly unbalanced pumps and a controlling peak power of 55 mW, while the efficiency is over 15% when using less asymmetric pumps. The numerical simulation agrees with the experimental results. Both time domain and spectral domain noise measurements show as low as 2 dB signal-to-noise ratio (SNR) penalty because of the strong pump noise, two-photon absorption, and free-carrier absorption in silicon. We discuss how the scheme can be used to implement an all-optically controlled high-speed switch.

  8. Controlled samples for silicon defect and impurity studies

    SciTech Connect

    Ciszek, T.F.

    1995-08-01

    Because of the diverse defects and impurities that are present in any given sample of silicon material, it can be extremely difficult to conduct a controlled experiment to study the influence of any particular defect or impurity on photovoltaic properties such as minority charge carrier lifetime {tau} or solar cell efficiency q. For example, the influence of iron may be different if boron is present, or the influence of silicon self interstitial clusters may be different if oxygen is present. It thus becomes important to conduct such studies on controlled samples where the influence of secondary effects is minimized. At NREL, over the past several years, we have focused on using the high-purity float-zone (FZ) growth method to obtain controlled samples. Because the silicon melt is not in contact with a container, and no heated components are in the growth region, very high purities and low defect levels can be achieved in baseline material. The baseline can be controllably perturbed by introduction of specific defects or impurities. The chart shown below lists some of the types of defect and impurity. combinations that can be studied in this way. The boxes marked with an {open_quotes}x{close_quotes} represent combinations we have studied to some extent.

  9. Polarization-independent silicon metadevices for efficient optical wavefront control

    DOE PAGES

    Chong, Katie E.; Staude, Isabelle; James, Anthony Randolph; Dominguez, Jason James; Liu, Sheng; Campione, Salvatore; Subramania, Ganapathi Subramanian; Luk, Ting S.; Decker, Manuel; Neshev, Dragomir N.; et al

    2015-07-20

    In this study, we experimentally demonstrate a functional silicon metadevice at telecom wavelengths that can efficiently control the wavefront of optical beams by imprinting a spatially varying transmittance phase independent of the polarization of the incident beam. Near-unity transmittance efficiency and close to 0–2π phase coverage are enabled by utilizing the localized electric and magnetic Mie-type resonances of low-loss silicon nanoparticles tailored to behave as electromagnetically dual-symmetric scatterers. We apply this concept to realize a metadevice that converts a Gaussian beam into a vortex beam. The required spatial distribution of transmittance phases is achieved by a variation of the latticemore » spacing as a single geometric control parameter.« less

  10. Polarization-Independent Silicon Metadevices for Efficient Optical Wavefront Control.

    PubMed

    Chong, Katie E; Staude, Isabelle; James, Anthony; Dominguez, Jason; Liu, Sheng; Campione, Salvatore; Subramania, Ganapathi S; Luk, Ting S; Decker, Manuel; Neshev, Dragomir N; Brener, Igal; Kivshar, Yuri S

    2015-08-12

    We experimentally demonstrate a functional silicon metadevice at telecom wavelengths that can efficiently control the wavefront of optical beams by imprinting a spatially varying transmittance phase independent of the polarization of the incident beam. Near-unity transmittance efficiency and close to 0-2π phase coverage are enabled by utilizing the localized electric and magnetic Mie-type resonances of low-loss silicon nanoparticles tailored to behave as electromagnetically dual-symmetric scatterers. We apply this concept to realize a metadevice that converts a Gaussian beam into a vortex beam. The required spatial distribution of transmittance phases is achieved by a variation of the lattice spacing as a single geometric control parameter. PMID:26192100

  11. Silicon Foils Growth by Interface-controlled Crystallization

    NASA Technical Reports Server (NTRS)

    Helmreich, D.

    1984-01-01

    During interface controlled crystallization (ICC) the chance to accelerate the removal of crystallization heat is the basis for high pulling rates of about 100 mm/min. The forced heat flow from the extended crystallization front to a cooling ramp is controlled by a lubricating melt film which also influences the crystallization behavior by suppressing nucleation centers. The basic principles of this full casting technique are presented and the influences of process parameters on the morphology of prepared silicon foils are demonstrated. Three different types of crystalline structure were found in silicon foils grown to ICC technique: dendritic, coarse granular and monocrystalline with (111) 211 orientation. The criteria for their appearance of process variables are discussed.

  12. Polarization-independent silicon metadevices for efficient optical wavefront control

    SciTech Connect

    Chong, Katie E.; Staude, Isabelle; James, Anthony Randolph; Dominguez, Jason James; Liu, Sheng; Campione, Salvatore; Subramania, Ganapathi Subramanian; Luk, Ting S.; Decker, Manuel; Neshev, Dragomir N.; Brener, Igal; Kivshar, Yuri S.

    2015-07-20

    In this study, we experimentally demonstrate a functional silicon metadevice at telecom wavelengths that can efficiently control the wavefront of optical beams by imprinting a spatially varying transmittance phase independent of the polarization of the incident beam. Near-unity transmittance efficiency and close to 0–2π phase coverage are enabled by utilizing the localized electric and magnetic Mie-type resonances of low-loss silicon nanoparticles tailored to behave as electromagnetically dual-symmetric scatterers. We apply this concept to realize a metadevice that converts a Gaussian beam into a vortex beam. The required spatial distribution of transmittance phases is achieved by a variation of the lattice spacing as a single geometric control parameter.

  13. Controllable nonlinear refraction characteristics in hydrogenated nanocrystalline silicon

    SciTech Connect

    Zheng, D. Q.; Ye, Q. H.; Shen, W. Z.; Su, W. A.

    2014-02-07

    Nonlinear refraction (NLR) of hydrogenated nanocrystalline silicon (nc-Si:H) has been investigated through the close aperture Z-scan method. We demonstrate a significant NLR and a unique feature of controllable NLR characteristics between saturable and Kerr NLR with the incident photon energy. We numerically evaluate the proportion of these two mechanisms in different wavelengths by a modified NLR equation. The band tail of nc-Si:H appears to play a crucial role in such NLR responses.

  14. A current type PWM rectifier with active damping function

    SciTech Connect

    Sato, Yukihiko; Kataoka, Teruo

    1995-12-31

    A new control method for current type PWM rectifiers which can provide active damping function is presented. This damping function is effective only on the harmonic components of ac input current selectively. Thus steady state waveform distortion and transient oscillation of the input current are reduced by the active damping effects. The active damping function can be realized by feed-back control of an LC filter connected to the ac side of the rectifier, and it does not require any additional components in the main circuits, permitting a simple circuit configuration. The control system of the proposed PWM rectifier is analyzed by using a simple block diagram developed in the present paper. From the analytical results, the influence of the circuit parameters and control delay on the active damping effects and the stability of the operation is clarified to establish the design method. To confirm the effectiveness of the active damping function, some results of basic experiments are included. As an example of application of the active damping function, the proposed rectifier is applied to reduce the harmonic currents generated by conventional rectifiers operating in parallel with the proposed rectifier. Some experimental results in this application are also included.

  15. A current-type PWM rectifier with active damping function

    SciTech Connect

    Sato, Yukihiko; Kataoka, Teruo

    1996-05-01

    A new control method for current-type pulse-width modulation (PWM) rectifiers which can provide active damping function is presented. This damping function is effective only on the harmonic components of ac input current selectively. Thus steady-state waveform distortion and transient oscillation of the input current are reduced by the active damping effects. The active damping function can be realized by feedback control of an LC filter connected to the ac side of the rectifier, and it does not require any additional components in the main circuits, permitting a simple circuit configuration. The control system of the proposed PWM rectifier is analyzed by using a simple block diagram developed in the present paper. From the analytical results, the influence of the circuit parameters and control delay on the active damping effects and the stability of the operation are clarified to establish the design method. To confirm the effectiveness of the active damping function, some results of basic experiments are included. As an example of application of the active damping function, the proposed rectifier is applied to reduce the harmonic currents generated by conventional rectifiers operating in parallel with the proposed rectifier. Some experimental results in this application are also included.

  16. Analysis of Single Phase PWM Rectifier for Different Applications

    NASA Astrophysics Data System (ADS)

    Mitra, Arkendu; Chowdhuri, Sumana

    2016-06-01

    This research work investigates the various applications of a PWM rectifier based on its input power factor. Most of the cases, the papers describe the operation of the rectifier used for unity power factor (UPF) operation. Beside this mode of operation, this paper compiles the application of the rectifier as STATCOM also, where the rectifier deals only with reactive power exchange. In this work, the controller is implemented by inserting a loop for reference input of phase angle which will be compared with the actual one, so that user can operate the rectifier at any power factor. Some basic formulae are derived for the input current, active power and reactive power based on which the control circuit is to be designed. Here two Proportional-Integral (PI) controllers are used. A brief description of tuning these two PI controllers is incorporated in this paper. Also some calculations are given to determine the harmonic factors of the input line current from which it is found that the rectifier when operated in each mode operation, the order of the harmonics are very low.

  17. Elastomeric microfluidic diode and rectifier work with Newtonian fluids

    PubMed Central

    Liu, John; Chen, Yan; Taylor, Clive R.; Scherer, Axel; Kartalov, Emil P.

    2009-01-01

    We report on two microfluidic elastomeric autoregulatory devices—a diode and a rectifier. They exhibit physically interesting and complex nonlinear behaviors (saturation, bias-dependent resistance, and rectification) with a Newtonian fluid. Due to their autoregulatory properties, they operate without active external control. As a result, they enable increased microfluidic device density and overall system miniaturization. The demonstrated diode and rectifier would also be useful components in future microfluidic logic circuitry. PMID:20057932

  18. Controlled thinning and surface smoothening of silicon nanopillars.

    PubMed

    Kalem, S; Werner, P; Nilsson, B; Talalaev, V G; Hagberg, M; Arthursson, O; Södervall, U

    2009-11-01

    A convenient method has been developed to thin electron beam fabricated silicon nanopillars under controlled surface manipulation by transforming the surface of the pillars to an oxide shell layer followed by the growth of sacrificial ammonium silicon fluoride coating. The results show the formation of an oxide shell and a silicon core without significantly changing the original length and shape of the pillars. The oxide shell layer thickness can be controlled from a few nanometers up to a few hundred nanometers. While downsizing in diameter, smooth Si pillar surfaces of less than 10 nm roughness within 2 microm were produced after exposure to vapors of HF and HNO3 mixture as evidenced by transmission electron microscopy (TEM) analysis. The attempt to expose for long durations leads to the growth of a thick oxide whose strain effect on pillars can be assessed by coupled LO-TO vibrational modes of Si-O bonds. Photoluminescence (PL) of the pillar structures which have been downsized exhibits visible and infrared emissions, which are attributable to microscopic pillars and to the confinement of excited carriers in the Si core, respectively. The formation of smooth core-shell structures while reducing the diameter of the Si pillars has a potential in fabricating nanoscale electronic devices and functional components.

  19. An evaluation system for experimental silicon and silicon carbide super gate turn off thyristors

    NASA Astrophysics Data System (ADS)

    Bayne, Stephen; Lacouture, Shelby; Lawson, Kevin; Giesselmann, Michael; Scozzie, Charles J.; O'Brien, Heather; Ogunniyi, Aderinto A.

    2014-07-01

    This paper describes the design and implementation of a small-scale pulsed power system specifically intended to evaluate the suitability of experimental silicon and silicon carbide high power Super Gate Turn Off thyristors for high action (500 A2 s and above) pulsed power applications where energy is extracted from a storage element in a rapid and controlled manner. To this end, six of each type of device was placed in a controlled three phase rectifier circuit which was in turn connected to an aircraft ground power motor-generator set and subjected to testing protocols with varying power levels, while parameters such as offset firing angle were varied.

  20. An evaluation system for experimental silicon and silicon carbide super gate turn off thyristors.

    PubMed

    Bayne, Stephen; Lacouture, Shelby; Lawson, Kevin; Giesselmann, Michael; Scozzie, Charles J; O'Brien, Heather; Ogunniyi, Aderinto A

    2014-07-01

    This paper describes the design and implementation of a small-scale pulsed power system specifically intended to evaluate the suitability of experimental silicon and silicon carbide high power Super Gate Turn Off thyristors for high action (500 A(2) s and above) pulsed power applications where energy is extracted from a storage element in a rapid and controlled manner. To this end, six of each type of device was placed in a controlled three phase rectifier circuit which was in turn connected to an aircraft ground power motor-generator set and subjected to testing protocols with varying power levels, while parameters such as offset firing angle were varied.

  1. Fast recovery, high voltage silicon diodes for AC motor controllers

    NASA Technical Reports Server (NTRS)

    Balodis, V.; Berman, A. H.; Gaugh, C.

    1982-01-01

    The fabrication and characterization of a high voltage, high current, fast recovery silicon diode for use in AC motor controllers, originally developed for NASA for use in avionics power supplies, is presented. The diode utilizes a positive bevel PIN mesa structure with glass passivation and has the following characteristics: peak inverse voltage - 1200 volts, forward voltage at 50 amperes - 1.5 volts, reverse recovery time of 200 nanoseconds. Characterization data for the diode, included in a table, show agreement with design concepts developed for power diodes. Circuit diagrams of the diode are also given.

  2. Controlled skeletal progenitor cell migration on nanostructured porous silicon/silicon micropatterns

    NASA Astrophysics Data System (ADS)

    Torres-Costa, V.; Sánchez-Vaquero, V.; Muñoz-Noval, Á.; González-Méndez, L.; Punzón-Quijorna, E.; Gallach-Pérez, D.; Manso-Silván, M.; Martínez-Muñoz, G.; Climent-Font, A.; García-Ruiz, J. P.; Martín-Palma, R. J.

    2011-10-01

    In this work nanostructured porous silicon (nanoPS) was used for the fabrication of surface micropatterns aiming at controlling cell adhesion and migration. In particular, surface patterns of nanoPS and Si were engineered by high-energy ion-beam irradiation and subsequent anodization. It was found that human skeletal progenitor cells are sensitive to oneand two-dimensional patterns and that focal adhesion is inhibited on nanoPS areas. In spite of this anti-fouling characteristics, studies on patterns with reduced Si areas show that cells conform to nanoPS pathways favoring migration through cell protrusion, body translocation and tail retraction from two parallel Si traction rails. Moreover, migration can be blocked and cells tend to arrange when grid patterns with the appropriate dimensions are fabricated. The experimental results confirm that progenitor cells are able to exploit nanoPS anti-fouling designs by adapting to it for migration purposes.

  3. RTD application in low power UHF rectifiers

    NASA Astrophysics Data System (ADS)

    Sinyakin, V. Yu; Makeev, M. O.; Meshkov, S. A.

    2016-08-01

    In the current work, the problem of UHF RFID passive tag sensitivity increase is considered. Tag sensitivity depends on HF signal rectifier efficiency and antenna-rectifier impedance matching. Possibility of RFID passive tag sensitivity increase up to 10 times by means of RTD use in HF signal rectifier in comparison with tags based on Schottky barrier diode is shown.

  4. Feedback loop compensates for rectifier nonlinearity

    NASA Technical Reports Server (NTRS)

    1966-01-01

    Signal processing circuit with two negative feedback loops rectifies two sinusoidal signals which are 180 degrees out of phase and produces a single full-wave rectified output signal. Each feedback loop incorporates a feedback rectifier to compensate for the nonlinearity of the circuit.

  5. Realistic-contact-induced enhancement of rectifying in carbon-nanotube/graphene-nanoribbon junctions

    SciTech Connect

    Zhang, Xiang-Hua; Li, Xiao-Fei; Wang, Ling-Ling Xu, Liang; Luo, Kai-Wu

    2014-03-10

    Carbon-nanotube/graphene-nanoribbon junctions were recently fabricated by the controllable etching of single-walled carbon-nanotubes [Wei et al., Nat. Commun. 4, 1374 (2013)] and their electronic transport properties were studied here. First principles results reveal that the transmission function of the junctions show a heavy dependence on the shape of contacts, but rectifying is an inherent property which is insensitive to the details of contacts. Interestingly, the rectifying ratio is largely enhanced in the junction with a realistic contact and the enhancement is insensitive to the details of contact structures. The stability of rectifying suggests a significant feasibility to manufacture realistic all-carbon rectifiers in nanoelectronics.

  6. Method for rapid, controllable growth and thickness, of epitaxial silicon films

    DOEpatents

    Wang, Qi; Stradins, Paul; Teplin, Charles; Branz, Howard M.

    2009-10-13

    A method of producing epitaxial silicon films on a c-Si wafer substrate using hot wire chemical vapor deposition by controlling the rate of silicon deposition in a temperature range that spans the transition from a monohydride to a hydrogen free silicon surface in a vacuum, to obtain phase-pure epitaxial silicon film of increased thickness is disclosed. The method includes placing a c-Si substrate in a HWCVD reactor chamber. The method also includes supplying a gas containing silicon at a sufficient rate into the reaction chamber to interact with the substrate to deposit a layer containing silicon thereon at a predefined growth rate to obtain phase-pure epitaxial silicon film of increased thickness.

  7. Single-switch 3{phi} PWM low harmonic rectifiers

    SciTech Connect

    Ismail, E.H.; Erickson, R.

    1996-03-01

    Existing 3{phi} ac-dc low-harmonic rectifiers are costly and require complex control schemes to minimize input current harmonics. Introduced here are two new classes of low cost 3{phi} ac-dc high power factor/low harmonic controlled rectifiers. These are derived from parent dc-dc converter topologies containing boost-type inputs and buck-type inputs. With a single active switch in addition to the diode bridge rectifier, the converters are capable of drawing a high-quality input current waveform naturally at nearly unit power factor. Thus, a simple 3{phi} ac-dc high power factor rectifier is obtained. Two algorithms are introduced in this paper for constructing a 3{phi} ac-dc high-quality rectifier. These algorithms depend on the simple switched-mode boost-type input converter and buck-type input converter modified by an input filter. For most known dc-dc converters which belong to these classes, there are corresponding 3{phi} ac-dc high power factor topologies, which use the same number of transistors and use six additional fast diodes. Analytical and simulation results are supplied to demonstrate the validity of the concept.

  8. Ordered silicon nanorod arrays with controllable geometry and robust hydrophobicity

    NASA Astrophysics Data System (ADS)

    Zi-Wen, Wang; Jia-Qi, Cai; Yi-Zhi, Wu; Hui-Jie, Wang; Xiao-Liang, Xu

    2015-01-01

    Highly ordered silicon nanorod (SiNR) arrays with controllable geometry are fabricated via nanosphere lithography and metal-assisted chemical etching. It is demonstrated that the key to achieving a high-quality metal mask is to construct a non-close-packed template that can be removed with negligible damage to the mask. Hydrophobicity of SiNR arrays of different geometries is also studied. It is shown that the nanorod structures are effectively quasi-hydrophobic with a contact angle as high as 142°, which would be useful in self-cleaning nanorod-based device applications. Project supported by the National Natural Science Foundation of China (Grant No. 51272246) and the Scientific and Technological Research Foundation of Anhui Province, China (Grant No. 12010202035).

  9. Gate-controlled resonant interband tunneling in silicon

    SciTech Connect

    Sedlmaier, S.; Bhuwalka, Krishna K.; Ludsteck, A.; Schmidt, M.; Schulze, J.; Hansch, W.; Eisele, I.

    2004-09-06

    We present gate-controlled resonant interband tunneling on silicon <111>. The investigated structure principally consists of a vertical, gated p-i-n diode grown by molecular beam epitaxy. We evaluated the surface tunnel current from a gate-induced two-dimensional electron channel into the quantized hole states of a degenerately doped {delta}p{sup +} layer. This current reveals a negative differential resistance due to resonant interband tunneling in the forward biased p-i-n diode at 200 K. Even at room temperature the influence of this tunnel mechanism is observed. The experimental results are in good agreement with simulated band diagrams and their dependence on the applied voltages.

  10. Controlled delivery of acyclovir from porous silicon micro- and nanoparticles

    NASA Astrophysics Data System (ADS)

    Maniya, Nalin H.; Patel, Sanjaykumar R.; Murthy, Z. V. P.

    2015-03-01

    In this work, micro- and nanoparticles of porous silicon (PSi) are demonstrated to act as effective carrier for the controlled delivery of acyclovir (ACV). PSi films prepared by electrochemical etching were fractured by ultrasonication to prepare micro- and nanoparticles. PSi native particles were thermally oxidized (TOPSi) and thermally hydrosilylated using undecylenic acid (UnPSi). PSi particles with three different surface chemistries were then loaded with ACV by physical adsorption and covalent attachment. Such particles were characterized by scanning electron microscopy, dynamic light scattering, and Fourier transform infrared spectroscopy. In vitro ACV release experiments in phosphate buffered saline showed sustained release behaviour from both micro- and nanoparticles and order of release was found to be native PSi > TOPSi > UnPSi. Drug release kinetics study using Korsmeyer-Peppas model suggested a combination of both drug diffusion and Si scaffold erosion based drug release mechanisms.

  11. Experimental investigation of radiative thermal rectifier using vanadium dioxide

    SciTech Connect

    Ito, Kota; Nishikawa, Kazutaka; Iizuka, Hideo; Toshiyoshi, Hiroshi

    2014-12-22

    Vanadium dioxide (VO{sub 2}) exhibits a phase-change behavior from the insulating state to the metallic state around 340 K. By using this effect, we experimentally demonstrate a radiative thermal rectifier in the far-field regime with a thin film VO{sub 2} deposited on the silicon wafer. A rectification contrast ratio as large as two is accurately obtained by utilizing a one-dimensional steady-state heat flux measurement system. We develop a theoretical model of the thermal rectifier with optical responses of the materials retrieved from the measured mid-infrared reflection spectra, which is cross-checked with experimentally measured heat flux. Furthermore, we tune the operating temperatures by doping the VO{sub 2} film with tungsten (W). These results open up prospects in the fields of thermal management and thermal information processing.

  12. Silicon-on-insulator integrated tunable polarization controller (Conference Presentation)

    NASA Astrophysics Data System (ADS)

    Sarmiento-Merenguel, Jose-Dario; Alonso-Ramos, Carlos; Halir, Robert; Le Roux, Xavier; Vivien, Laurent; Cheben, Pavel; Durán-Valdeiglesias, Elena; Molina-Fernández, Iñigo; Marris-Morini, Delphine; Xu, Danxia; Schmid, Jens H.; Janz, Siegfried; Ortega-Moñux, Alejandro

    2016-05-01

    Polarization management is a key functionality in many photonic applications, including optical communications, imaging or quantum information. Developing integrated devices capable of reliably controlling polarization state would result in compact and low cost circuits with improved stability compared with fiber or bulk optics solutions. However, stringent fabrication tolerances make the integration of polarization managing elements highly challenging. The main challenge in polarization controllers, composed by polarization rotators and polarization phase shifters, is to precisely control rotation angle in integrated polarization rotators. Proposed solutions typically require sophisticated fabrication processes or extremely tight fabrication tolerances, seriously hindering their practical application. Here we present a technology independent polarization controller scheme that relies on phase shifters to largely relax fabrication tolerances of polarization rotators. In addition, these phase shifters enable dynamic wavelength tuning. In our scheme, three polarization rotation elements are interconnected with two tunable phase shifters to adjust the polarization extinction ratio, while an output polarization phase shifter is used to select the relative phase. This way we can achieve any desired output state of polarization. We have implemented this scheme in the silicon-on-insulator platform, experimentally demonstrating a record polarization extinction range of 40 dB (± 20 dB) with a 98% coverage of the Poincaré sphere. Furthermore, the device is tunable in the complete C-band. These results constitute, to the best of our knowledge, the highest polarization extinction range achieved in a fully integrated device.

  13. Molecular rectifiers: a new design based on asymmetric anchoring moieties.

    PubMed

    Van Dyck, Colin; Ratner, Mark A

    2015-03-11

    The quest for a molecular rectifier is among the major challenges of molecular electronics. We introduce three simple rules to design an efficient rectifying molecule and demonstrate its functioning at the theoretical level, relying on the NEGF-DFT technique. The design rules notably require both the introduction of asymmetric anchoring moieties and a decoupling bridge. They lead to a new rectification mechanism based on the compression and control of the HOMO/LUMO gap by the electrode Fermi levels, arising from a pinning effect. Significant rectification ratios up to 2 orders of magnitude are theoretically predicted as the mechanism opposes resonant to nonresonant tunneling. PMID:25706442

  14. Steric stabilization of nonaqueous silicon slips. I - Control of particle agglomeration and packing. II - Pressure casting of powder compacts

    NASA Technical Reports Server (NTRS)

    Kerkar, Awdhoot V.; Henderson, Robert J. M.; Feke, Donald L.

    1990-01-01

    The application of steric stabilization to control particle agglomeration and packing of silicon powder in benzene and trichloroethylene is reported. The results provide useful guidelines for controlling unfavorable particle-particle interactions during nonaqueous processing of silicon-based ceramic materials. The application of steric stabilization to the control and improvement of green processing of nonaqueous silicon slips in pressure consolidation is also demonstrated.

  15. Controlled fabrication of silicon nanowires via nanosphere lithograph and metal assisted chemical etching.

    PubMed

    Sun, Bo; Shi, Tielin; Sheng, Wenjun; Liao, Guanglan

    2013-08-01

    We investigated the controlled fabrication of uniform vertical aligned silicon nanowires with desired length, diameter and location by combining nanosphere lithograph and metal assisted chemical etching techniques. The close-packed polystyrene nanospheres array was obtained by self-assemble technique, followed by reactive ion etching to acquire a non-close-packed monolayer template. Subsequently, the template was used to create a metal film with nanoholes array, which enable the controlled fabrication of ordered silicon nanowires via metal assisted chemical etching technique. By adjusting the monolayer of polystyrene nanospheres and the conditions for the metal assisted chemical etching, we obtained uniform distributed silicon nanowires with desired morphology. The aspect ratio of the silicon nanowires can reach to about 86:1. Furthermore, we have obtained the double-layer silicon nanowires by slight modifying the process. The influences of various conditions during etching were also discussed for improving the controlled fabrication.

  16. Control of carbon balance in a silicon smelting furnace

    DOEpatents

    Dosaj, V.D.; Haines, C.M.; May, J.B.; Oleson, J.D.

    1992-12-29

    The present invention is a process for the carbothermic reduction of silicon dioxide to form elemental silicon. Carbon balance of the process is assessed by measuring the amount of carbon monoxide evolved in offgas exiting the furnace. A ratio of the amount of carbon monoxide evolved and the amount of silicon dioxide added to the furnace is determined. Based on this ratio, the carbon balance of the furnace can be determined and carbon feed can be adjusted to maintain the furnace in carbon balance.

  17. Phonon thermoelectric transistors and rectifiers

    NASA Astrophysics Data System (ADS)

    Jiang, Jian-Hua; Kulkarni, Manas; Segal, Dvira; Imry, Yoseph

    2015-07-01

    We describe nonlinear phonon-thermoelectric devices where charge current and electronic and phononic heat currents are coupled, driven by voltage and temperature biases, when phonon-assisted inelastic processes dominate the transport. Our thermoelectric transistors and rectifiers can be realized in a gate-tunable double quantum-dot system embedded in a nanowire which is realizable within current technology. The inelastic electron-phonon scattering processes are found to induce pronounced charge, heat, and cross rectification effects, as well as a thermal transistor effect that, remarkably, can appear in the present model even in the linear-response regime without relying on the onset of negative differential thermal conductance.

  18. Recruitment of Gβγ controls the basal activity of G-protein coupled inwardly rectifying potassium (GIRK) channels: crucial role of distal C terminus of GIRK1.

    PubMed

    Kahanovitch, Uri; Tsemakhovich, Vladimir; Berlin, Shai; Rubinstein, Moran; Styr, Boaz; Castel, Ruth; Peleg, Sagit; Tabak, Galit; Dessauer, Carmen W; Ivanina, Tatiana; Dascal, Nathan

    2014-12-15

    The G-protein coupled inwardly rectifying potassium (GIRK, or Kir3) channels are important mediators of inhibitory neurotransmission via activation of G-protein coupled receptors (GPCRs). GIRK channels are tetramers comprising combinations of subunits (GIRK1-4), activated by direct binding of the Gβγ subunit of Gi/o proteins. Heterologously expressed GIRK1/2 exhibit high, Gβγ-dependent basal currents (Ibasal) and a modest activation by GPCR or coexpressed Gβγ. Inversely, the GIRK2 homotetramers exhibit low Ibasal and strong activation by Gβγ. The high Ibasal of GIRK1 seems to be associated with its unique distal C terminus (G1-dCT), which is not present in the other subunits. We investigated the role of G1-dCT using electrophysiological and fluorescence assays in Xenopus laevis oocytes and protein interaction assays. We show that expression of GIRK1/2 increases the plasma membrane level of coexpressed Gβγ (a phenomenon we term 'Gβγ recruitment') but not of coexpressed Gαi3. All GIRK1-containing channels, but not GIRK2 homomers, recruited Gβγ to the plasma membrane. In biochemical assays, truncation of G1-dCT reduces the binding between the cytosolic parts of GIRK1 and Gβγ, but not Gαi3. Nevertheless, the truncation of G1-dCT does not impair activation by Gβγ. In fluorescently labelled homotetrameric GIRK1 channels and in the heterotetrameric GIRK1/2 channel, the truncation of G1-dCT abolishes Gβγ recruitment and decreases Ibasal. Thus, we conclude that G1-dCT carries an essential role in Gβγ recruitment by GIRK1 and, consequently, in determining its high basal activity. Our results indicate that G1-dCT is a crucial part of a Gβγ anchoring site of GIRK1-containing channels, spatially and functionally distinct from the site of channel activation by Gβγ.

  19. Recruitment of Gβγ controls the basal activity of G-protein coupled inwardly rectifying potassium (GIRK) channels: crucial role of distal C terminus of GIRK1

    PubMed Central

    Kahanovitch, Uri; Tsemakhovich, Vladimir; Berlin, Shai; Rubinstein, Moran; Styr, Boaz; Castel, Ruth; Peleg, Sagit; Tabak, Galit; Dessauer, Carmen W; Ivanina, Tatiana; Dascal, Nathan

    2014-01-01

    The G-protein coupled inwardly rectifying potassium (GIRK, or Kir3) channels are important mediators of inhibitory neurotransmission via activation of G-protein coupled receptors (GPCRs). GIRK channels are tetramers comprising combinations of subunits (GIRK1–4), activated by direct binding of the Gβγ subunit of Gi/o proteins. Heterologously expressed GIRK1/2 exhibit high, Gβγ-dependent basal currents (Ibasal) and a modest activation by GPCR or coexpressed Gβγ. Inversely, the GIRK2 homotetramers exhibit low Ibasal and strong activation by Gβγ. The high Ibasal of GIRK1 seems to be associated with its unique distal C terminus (G1-dCT), which is not present in the other subunits. We investigated the role of G1-dCT using electrophysiological and fluorescence assays in Xenopus laevis oocytes and protein interaction assays. We show that expression of GIRK1/2 increases the plasma membrane level of coexpressed Gβγ (a phenomenon we term ‘Gβγ recruitment’) but not of coexpressed Gαi3. All GIRK1-containing channels, but not GIRK2 homomers, recruited Gβγ to the plasma membrane. In biochemical assays, truncation of G1-dCT reduces the binding between the cytosolic parts of GIRK1 and Gβγ, but not Gαi3. Nevertheless, the truncation of G1-dCT does not impair activation by Gβγ. In fluorescently labelled homotetrameric GIRK1 channels and in the heterotetrameric GIRK1/2 channel, the truncation of G1-dCT abolishes Gβγ recruitment and decreases Ibasal. Thus, we conclude that G1-dCT carries an essential role in Gβγ recruitment by GIRK1 and, consequently, in determining its high basal activity. Our results indicate that G1-dCT is a crucial part of a Gβγ anchoring site of GIRK1-containing channels, spatially and functionally distinct from the site of channel activation by Gβγ. PMID:25384780

  20. Enhanced Rectification Efficiency In Cascaded Ballistic GaAs/AlGaAs Rectifiers

    NASA Astrophysics Data System (ADS)

    Wieser, U.; Knop, M.; Koop, P.; Kunze, U.; Reuter, D.; Wieck, A. D.

    2007-04-01

    We report on an enhanced efficiency of inertial-ballistic rectification in a cascade of rectifier stages. Each rectifier stage is composed of a pair of current injecting branches which oppositely merge into a central voltage stem. The voltages obtained at both ends of the stem enable to separate inertial-ballistic and mode-controlled rectification. In a cascade composed of two rectifier stages the total inertial-ballistic signal is enhanced compared to the single contributions while the mode-controlled signal is almost unaffected.

  1. Modelling and engineering of stress based controlled oxidation effects for silicon nanostructure patterning

    NASA Astrophysics Data System (ADS)

    Han, Xiang-Lei; Larrieu, Guilhem; Krzeminski, Christophe

    2013-12-01

    Silicon nanostructure patterning with tight geometry control is an important challenge at the bottom level. In that context, stress based controlled oxidation appears to be an efficient tool for precise nanofabrication. Here, we investigate the stress-retarded oxidation phenomenon in various silicon nanostructures (nanobeams, nanorings and nanowires) at both the experimental and the theoretical levels. Different silicon nanostructures have been fabricated by a top-down approach. Complex dependence of the stress build-up on the nano-object’s dimension, shape and size has been demonstrated experimentally and physically explained by modelling. For the oxidation of a two-dimensional nanostructure (nanobeam), relative independence to size effects has been observed. On the other hand, radial stress increase with geometry downscaling of a one-dimensional nanostructure (nanowire) has been carefully emphasized. The study of shape engineering by retarded oxidation effects for vertical silicon nanowires is finally discussed.

  2. Controls on silicon cycling in Southeast Asian rice production systems

    NASA Astrophysics Data System (ADS)

    Klotzbücher, Thimo; Marxen, Anika; Vetterlein, Doris; Jahn, Reinhold

    2013-04-01

    Recent research suggests that silicon (Si) is beneficial for rice plants, i.e., a sufficient Si supply improves their resistance against pests and pathogens and increases the uptake of essential nutrients. Despite its potential importance for rice yields, cycling of Si in rice production systems is poorly studied. We assess plant-available Si (Sipa; determined using acetate extraction) in topsoils (Ap+Arp horizons) and Si uptake by plants at 70 paddy fields managed by local farmers in contrasting regions of Vietnam and the Philippines. First results show that Sipa contents are considerably larger in Philippine (217 ± 100 mg Sipa kg-1 ) than in Vietnamese (32 ± 19 mg Sipa kg-1) paddy soils. Rice straw from the Philippines contains 8.6 ± 0.9 % Si, straw from Vietnam 5.0 ± 1.2 % Si. Laboratory experiments showed that Si is limiting the growth of rice plants in some of the Vietnamese soils. We assume that differences in geo-/ pedologic conditions between Vietnam and the Philippines explain the data. Large Sipa contents in the Philippine soils are due to recent rock formation by active volcanism, hence, by a large Sipa input due to mineral weathering in recent geologic history. In contrast, parent materials of the Vietnamese paddy soils derive from old and highly weathered land surfaces. Hence, our data suggest that geo-/pedologic conditions are the main control for the availability of Si in paddy soils. Currently, we examine the relevance of agricultural practices for small-scale differences in the availability of Si within regions. Inadequate practices, such as removal of rice straw from the fields, might deplete Sipa in paddy soils causing a decrease in rice yields in some regions of Vietnam. We investigate the role of phytoliths (amorphous Si bodies contained in rice straw) as source of Sipa in paddy soils. Our methods include laboratory experiments and the assessment of turnover times of phytoliths in paddy soils; first results will be presented and discussed

  3. Process to produce silicon carbide fibers using a controlled concentration of boron oxide vapor

    NASA Technical Reports Server (NTRS)

    Barnard, Thomas Duncan (Inventor); Lipowitz, Jonathan (Inventor); Nguyen, Kimmai Thi (Inventor)

    2000-01-01

    A process for producing polycrystalline silicon carbide includes heating an amorphous ceramic fiber that contains silicon and carbon in an environment containing boron oxide vapor. The boron oxide vapor is produced in situ by the reaction of a boron containing material such as boron carbide and an oxidizing agent such as carbon dioxide, and the amount of boron oxide vapor can be controlled by varying the amount and rate of addition of the oxidizing agent.

  4. Process to produce silicon carbide fibers using a controlled concentration of boron oxide vapor

    NASA Technical Reports Server (NTRS)

    Barnard, Thomas Duncan (Inventor); Lipowitz, Jonathan (Inventor); Nguyen, Kimmai Thi (Inventor)

    2001-01-01

    A process for producing polycrystalline silicon carbide by heating an amorphous ceramic fiber that contains silicon and carbon in an environment containing boron oxide vapor. The boron oxide vapor is produced in situ by the reaction of a boron containing material such as boron carbide and an oxidizing agent such as carbon dioxide, and the amount of boron oxide vapor can be controlled by varying the amount and rate of addition of the oxidizing agent.

  5. ISGV Self-rectifying Turbine Design For Thermoacoustic Application

    NASA Astrophysics Data System (ADS)

    Sammak, Shervin; Asghary, Maryam; Ghorbanian, Kaveh

    2014-11-01

    Thermoacoustic engines produce the acoustic power from wasted heat and then electricity can be generated from acoustic power. Utilizing self-rectifying turbine after a thermoacoustic engine allows for deploying standard generators with high enough rotational speed that remarkably reduce abrasion, size and cost and significantly increase efficiency and controllability in comparison with linear alternators. In this paper, by evaluating all different type of self-rectifying turbine, impulse turbine with self-piched controlled (ISGV) is chosen as the most appropriate type for this application. This kind of turbine is designed in detail for a popular engine, thermoacoustic stirling heat engine (TASHE). In order to validate the design, a full scale size of designed turbine is modeled in ANSYS CFX. As a result, optimum power and efficiency gained based on numerical data.

  6. RF sputtering for controlling dihydride and monohydride bond densities in amorphous silicon hydride

    DOEpatents

    Jeffery, F.R.; Shanks, H.R.

    1980-08-26

    A process is described for controlling the dihydride and monohydride bond densities in hydrogenated amorphous silicone produced by reactive rf sputtering of an amorphous silicon target. There is provided a chamber with an amorphous silicon target and a substrate therein with the substrate and the target positioned such that when rf power is applied to the target the substrate is in contact with the sputtering plasma produced thereby. Hydrogen and argon are fed to the chamber and the pressure is reduced in the chamber to a value sufficient to maintain a sputtering plasma therein, and then rf power is applied to the silicon target to provide a power density in the range of from about 7 watts per square inch to about 22 watts per square inch to sputter an amorphous solicone hydride onto the substrate, the dihydride bond density decreasing with an increase in the rf power density. Substantially pure monohydride films may be produced.

  7. Advanced process control and novel test methods for PVD silicon and elastomeric silicone coatings utilized on ion implant disks, heatsinks and selected platens

    SciTech Connect

    Springer, J.; Allen, B.; Wriggins, W.; Kuzbyt, R.; Sinclair, R.

    2012-11-06

    Coatings play multiple key roles in the proper functioning of mature and current ion implanters. Batch and serial implanters require strategic control of elemental and particulate contamination which often includes scrutiny of the silicon surface coatings encountering direct beam contact. Elastomeric Silicone Coatings must accommodate wafer loading and unloading as well as direct backside contact during implant plus must maintain rigid elemental and particulate specifications. The semiconductor industry has had a significant and continuous effort to obtain ultra-pure silicon coatings with sustained process performance and long life. Low particles and reduced elemental levels for silicon coatings are a major requirement for process engineers, OEM manufacturers, and second source suppliers. Relevant data will be presented. Some emphasis and detail will be placed on the structure and characteristics of a relatively new PVD Silicon Coating process that is very dense and homogeneous. Wear rate under typical ion beam test conditions will be discussed. The PVD Silicon Coating that will be presented here is used on disk shields, wafer handling fingers/fences, exclusion zones of heat sinks, beam dumps and other beamline components. Older, legacy implanters can now provide extended process capability using this new generation PVD silicon - even on implanter systems that were shipped long before the advent of silicon coating for contamination control. Low particles and reduced elemental levels are critical performance criteria for the silicone elastomers used on disk heatsinks and serial implanter platens. Novel evaluation techniques and custom engineered tools are used to investigate the surface interaction characteristics of multiple Elastomeric Silicone Coatings currently in use by the industry - specifically, friction and perpendicular stiction. These parameters are presented as methods to investigate the critical wafer load and unload function. Unique tools and test

  8. Amorphous silicon Schottky barrier solar cells incorporating a thin insulating layer and a thin doped layer

    DOEpatents

    Carlson, David E.

    1980-01-01

    Amorphous silicon Schottky barrier solar cells which incorporate a thin insulating layer and a thin doped layer adjacent to the junction forming metal layer exhibit increased open circuit voltages compared to standard rectifying junction metal devices, i.e., Schottky barrier devices, and rectifying junction metal insulating silicon devices, i.e., MIS devices.

  9. Control of microelectromechanical systems membrane curvature by silicon ion implantation

    NASA Astrophysics Data System (ADS)

    Jin, S.; Mavoori, H.; Kim, J.; Aksyuk, V. A.

    2003-09-01

    Thin silicon membranes in microelectromechanical systems (MEMS) optical devices such as beam-steering, movable mirrors may exhibit undesirable curvature when their surface is metallized with light-reflecting metals to enhance optical performance. We have applied Si+ ion implantations at dose levels of 0.4-5×1016/cm2 into the gold metallization layer to successfully reduce the mirror curvature as well as the degree of its temperature-dependent changes. The curvature change as well as the temperature dependence is found to be dependent on the implantation dose. The mechanism of the observed curvature flattening effect is attributed mostly to the induced compressive stress in gold metallization caused by the insertion of foreign implanted atoms of silicon. Such a Si implantation approach can be useful as a means for post-fabrication correction of unwanted curvature in MEMS membranes, as well as a technique to intentionally introduce a desired degree of curvature if needed. A convenient blanket implantation process can be utilized with minimal contamination problems as Si is a common element already present in the MEMS.

  10. Temperature control and characterization of silicon-germanium growth by rapid thermal chemical vapor deposition

    NASA Astrophysics Data System (ADS)

    Hwang, Sung-Bo

    Rapid thermal chemical vapor deposition (RTCVD) is an emerging technology to utilize low thermal budgets required to grow silicon-germanium alloys in a coherent way. However, the current state-of-the-art in RTCVD technique lacks some key elements required for acceptance of RTCVD in mainstream IC fabrication. These shortcomings include adequate control of wafer temperature during processing, and sufficient understanding of the growth kinetics. This dissertation describes and discusses the temperature control in RTCVD, the growth, and characterization of silicon-germanium alloys. The RTCVD system provides very reliable temperature-measurements, for a range of 480˜820°C, based on infrared-light (1.3 or 1.55mum) absorption in the silicon wafer during the growth of silicon-germanium alloys. A wafer heat transfer model developed using the view-factor analysis is used to investigate temperature distributions with respect to lamp configurations in RTCVD system. For a precise temperature control, a neural model-based controller in single-input-single-output (SISO) system is proposed, and compared with other controllers. Silicon-germanium alloys, in various semiconductor structures including dots, have been grown by RTCVD where temperature is well-controlled by the model-based controller. The structural and chemical properties of silicon-germanium alloys are characterized by X-ray diffraction, atomic force microscopy (AFM), transmission electron microscopy (TEM), and secondary ion mass spectrometry (SIMS). The different growth characteristics dominated by a silicon-source gas are exploited, and their process models are developed with the experimental data utilizing neural networks employed the Bayesian framework to accurately describe the process behaviors such as growth rate and Ge fraction in alloys with respect to process variables (to capture the process nonlinearity). By controlling growth rate and Ge fraction, a uniform and a grading Ge profile in silicon

  11. Flow restrictor silicon membrane microvalve actuated by optically controlled paraffin phase transition

    NASA Astrophysics Data System (ADS)

    Kolari, K.; Havia, T.; Stuns, I.; Hjort, K.

    2014-08-01

    Restrictor valves allow proportional control of fluid flow but are rarely integrated in microfluidic systems. In this study, an optically actuated silicon membrane restrictor microvalve is demonstrated. Its actuation is based on the phase transition of paraffin, using a paraffin wax mixed with a suitable concentration of optically absorbing nanographite particles. Backing up the membrane with oil (the melted paraffin) allows for a compliant yet strong contact to the valve seat, which enables handling of high pressures. At flow rates up to 30 µL min-1 and at a pressure of 2 bars, the valve can successfully be closed and control the flow level by restriction. The use of this paraffin composite as an adhesive layer sandwiched between the silicon valve and glass eases fabrication. This type of restrictor valve is best suited for high pressure, low volume flow silicon-based nanofluidic systems.

  12. Controlling optical properties and surface morphology of dry etched porous silicon

    NASA Astrophysics Data System (ADS)

    Cheung, Maurice C.-K.; Roche, Philip J. R.; Hajj-Hassan, Mohamad; Kirk, Andrew G.; Mi, Zetian; Chodavarapu, Vamsy P.

    2011-01-01

    Porous silicon is a potentially useful substrate for fluorescence and scattering enhancement, with a large surface to volume ratio and thermal stability providing a potentially regenerable host matrix for sensor development. A simple process using XeF2 gas phase etching for creating porous silicon is explained. Moreover, how pores diameter can be controlled reproducibly with commensurate effects upon the silicon reflection and pore distribution is discussed. In previous work with this new system, it was clear that control on pore size and morphology was required and a systematic optimization of process conditions was performed to produce greater consistency of the result. The influence of the duration of the pre-etching processing in HF, concentration of the HF in the pre-etching process, and the XeF2 exposure time during the dry etching on surface morphology, pore size, and optical reflectance is explored.

  13. Quantum control in silicon using coherent THz pulses

    NASA Astrophysics Data System (ADS)

    Lynch, Stephen A.; Greenland, P. Thornton; van der Meer, Alexander F. G.; Murdin, Benedict N.; Pidgeon, Carl R.; Redlich, Britta; Vinh, Nguyen Q.; Aeppli, Gabriel

    2012-10-01

    It has long been known that shallow donors such as phosphorous and the other group-V elements, have a hydrogen-like optical spectrum. The main difference is that while the spectrum of atomic hydrogen lies in the visible band, the spectrum of shallow donors in silicon is downshifted to the THz frequency band. This is a direct consequence of the reduced Coulomb attraction seen by the loosely bound electron because the core electrons shield the positive donor atom nucleus, and because the electron is now moving in a dielectric material. While spectroscopy has already revealed much about the energy level structure, very little was known about the temporal dynamics of the system until now. We have used THz pulses from the FELIX free electron laser to probe these hydrogen-like levels. By exploiting the well-known pump-probe technique we have measured the characteristic lifetimes of the excited Rydberg states and found them to be of the order 200 ps. Then, by making subtle changes to the geometry of the pump-probe experimental setup we demonstrate the existence of a THz photon echo. The photon echo is a purely quantum phenomenon with no classical analogue, and it allows us to study the quantum state of the donor electron. We then show, using the photon echo, that it is possible to create a coherent superposition of the ground and excited state of the donor. Measuring the photon echo is important because it can also be used to measure a second important characteristic lifetime of the silicon-donor system, the phase decoherence time.

  14. An optical leaky wave antenna with silicon perturbations for electronic control

    NASA Astrophysics Data System (ADS)

    Campione, Salvatore; Song, Qi; Boyraz, Ozdal; Capolino, Filippo

    2011-10-01

    An optical leaky wave antenna (OLWA) is a device that radiates a light wave into the surrounding space from a leaky wave (LW) guided mode or receives optical power from the surrounding space into a guided optical mode. In this work, we propose and provide a 3D analysis of a novel CMOS compatible OLWA made of a silicon nitride (Si3N4) waveguide comprising periodic silicon perturbations which allow electronic tuning capability. The analysis presented here includes the effect of the number of semiconductor perturbations, the antenna radiation pattern and directivity. We show that the number of the silicon perturbations has to be large to provide a long radiating section required to achieve radiation with high directivity. In other words, the proposed structure allows for a very narrow-beam radiation. Preliminary results are confirmed by exploiting leaky wave and antenna array factor theory, as well as verified by means of two full-wave simulators (HFSS and COMSOL). Our purpose is to ultimately use PIN junctions as building blocks for each silicon implantation for the electronic control of the radiation. In particular, the electronic tunability of the optical parameters of silicon (such as refractive index and absorption coefficient) via current injection renders itself the ideal platform for optical antennas that can facilitate electronic beam control, and boost the efficiency of optoelectronic devices such as light-emitting diodes, lasers and solar cells, and bio-chemical sensors.

  15. D0 Silicon Upgrade: Control Dewar Valve Calculations

    SciTech Connect

    Rucinski, Russ; /Fermilab

    1995-10-20

    This engineering note documents the calculations that were done to support the valve size selection for the magnet flow control valve, EVMF in the solenoid control dewar. The size selected was a control valve with a Cv = 0.32.

  16. Controlling leakage losses in subwavelength grating silicon metamaterial waveguides.

    PubMed

    Sarmiento-Merenguel, J Darío; Ortega-Moñux, Alejandro; Fédéli, Jean-Marc; Wangüemert-Pérez, J Gonzalo; Alonso-Ramos, Carlos; Durán-Valdeiglesias, Elena; Cheben, Pavel; Molina-Fernández, Íñigo; Halir, Robert

    2016-08-01

    Subwavelength gratings (SWG) are photonic structures with a period small enough to suppress diffraction, thereby acting as artificial dielectric materials, also called all-dielectric metamaterials. This property has been exploited in many high-performance photonic integrated devices in the silicon-on-insulator (SOI) platform. While SWG waveguides are theoretically lossless, they may exhibit leakage penalty to the substrate due to a combination of reduced modal confinement and finite thickness of the buried oxide (BOX) layer. In this Letter, for the first time, to the best of our knowledge, we analyze substrate leakage losses in SWG waveguides. We establish a direct relation between the effective index of the waveguide mode and the leakage losses which, remarkably, is independent of the geometric parameters of the SWG waveguide. This universal relation is demonstrated both numerically and experimentally, and it provides practical design guidelines to mitigate leakage losses. For BOX thicknesses of 2 and 3 μm, we find negligible leakage losses when the mode effective index is higher than 1.65 and 1.55, respectively. PMID:27472589

  17. Multi-crystalline silicon solidification under controlled forced convection

    NASA Astrophysics Data System (ADS)

    Cablea, M.; Zaidat, K.; Gagnoud, A.; Nouri, A.; Chichignoud, G.; Delannoy, Y.

    2015-05-01

    Multi-crystalline silicon wafers have a lower production cost compared to mono-crystalline wafers. This comes at the price of reduced quality in terms of electrical properties and as a result the solar cells made from such materials have a reduced efficiency. The presence of different impurities in the bulk material plays an important role during the solidification process. The impurities are related to different defects (dislocations, grain boundaries) encountered in multi-crystalline wafers. Applying an alternative magnetic field during the solidification process has various benefits. Impurities concentration in the final ingot could be reduced, especially metallic species, due to a convective term added in the liquid that reduces the concentration of impurities in the solute boundary layer. Another aspect is the solidification interface shape that is influenced by the electromagnetic stirring. A vertical Bridgman type furnace was used in order to study the solidification process of Si under the influence of a travelling magnetic field able to induce a convective flow in the liquid. The furnace was equipped with a Bitter type three-phase electromagnet that provides the required magnetic field. A numerical model of the furnace was developed in ANSYS Fluent commercial software. This paper presents experimental and numerical results of this approach, where interface markings were performed.

  18. Control of back surface reflectance from aluminum alloyed contacts on silicon solar cells

    SciTech Connect

    Cudzinovic, M.; Sopori, B.

    1996-05-01

    A process for forming highly reflective aluminum back contacts with low contact resistance to silicon solar cells is described. By controlling the process conditions, it is possible to vary the silicon/aluminum interface from a specular to a diffuse reflector while maintaining a high interface reflectance. The specular interface is found to be a uniform silicon/aluminum alloy layer a few angstroms thick that has epitaxially regrown on the silicon. The diffuse interface consists of randomly distributed (111) pyramids produced by crystallographic out-diffusion of the bulk silicon. The light trapping ability of the diffuse contact is found to be close to the theoretical limit. Both types of contacts are found to have specific contact resistivities of 10{sup {minus}5} {Omega}-cm{sup 2}. The process for forming the contacts involves illuminating the devices with tungsten halogen lamps. The process is rapid (under 100 s) and low temperature (peak temperature < 580{degrees}C), making it favorable for commercial solar cell fabrication.

  19. Coherent control of single spins in silicon carbide at room temperature.

    PubMed

    Widmann, Matthias; Lee, Sang-Yun; Rendler, Torsten; Son, Nguyen Tien; Fedder, Helmut; Paik, Seoyoung; Yang, Li-Ping; Zhao, Nan; Yang, Sen; Booker, Ian; Denisenko, Andrej; Jamali, Mohammad; Momenzadeh, S Ali; Gerhardt, Ilja; Ohshima, Takeshi; Gali, Adam; Janzén, Erik; Wrachtrup, Jörg

    2015-02-01

    Spins in solids are cornerstone elements of quantum spintronics. Leading contenders such as defects in diamond or individual phosphorus dopants in silicon have shown spectacular progress, but either lack established nanotechnology or an efficient spin/photon interface. Silicon carbide (SiC) combines the strength of both systems: it has a large bandgap with deep defects and benefits from mature fabrication techniques. Here, we report the characterization of photoluminescence and optical spin polarization from single silicon vacancies in SiC, and demonstrate that single spins can be addressed at room temperature. We show coherent control of a single defect spin and find long spin coherence times under ambient conditions. Our study provides evidence that SiC is a promising system for atomic-scale spintronics and quantum technology. PMID:25437256

  20. Controlled intensity emission from patterned porous silicon using focused proton beam irradiation

    SciTech Connect

    Teo, E.J.; Mangaiyarkarasi, D.; Breese, M.B.H.; Bettiol, A.A.; Blackwood, D.J.

    2004-11-08

    We have fabricated light emitting porous silicon micropatterns with controlled emission intensity. This has been achieved by direct write irradiation in heavily doped p-type silicon (0.02 {omega} cm) using a 2 MeV proton beam, focused to a spot size of 200 nm. After electrochemical etching in hydrofluoric acid, enhanced photoluminescence is observed from the irradiated regions. The intensity of light emission is proportional to the dose of the proton beam, so the PL intensity of the micropattern can be tuned and varied between adjacent regions on a single substrate. This behavior is in contrast to previous ion beam patterning of p-type silicon, as light is preferentially created as opposed to quenched at the irradiated regions.

  1. Analysis of parametric transformer with rectifier load

    SciTech Connect

    Ichinokura, O.; Jinzenji, T. ); Tajima, K. )

    1993-03-01

    This paper describes a push-pull parametric transformer constructed using a pair of orthogonal-cores. The operating characteristics of the parametric transformer with a rectifier load were analyzed based on SPICE simulations. The analysis results show good agreement with experiment. It was found that the input surge current of the full-wave rectifier circuit with a smoothing capacitor can be compensated by the parametric transformer. Use of the parametric transformer as a power stabilizer is anticipated owing to its various functions such as for voltage regulation and overload protection.

  2. PWM rectifier with low dc voltage ripple for magnet supply

    SciTech Connect

    Ciscato, D. ); Malesani, L.; Rosetto, L.; Tenti, P. ); Basile, G.L.; Pasti, M. ); Voelker, F. )

    1992-04-01

    PWM bridge rectifiers with GTO switches are considered for application to particle accelerator magnet power supplies, where two-quadrant operation and extremely low dc current ripple are required. Different control strategies, with both preprogrammed and variable switching patterns, are examined and compared in view of optimization of the system performance. In particular, optimum digital PWM, multilevel delta modulation, and hybrid PWM/delta techniques are analyzed. In this paper the validity of the control methods is verified by simulation and experimental tests on a 60-kW prototype.

  3. Evaluation of environmental control equipment for thin film silicon photovoltaic cell processing: Phase I

    SciTech Connect

    Khanna, A.K.; Gupta, R.; Joseph, A.; Singh, N.; Vojtek, M.E.

    1987-01-01

    Thin film silicon:hydrogen alloys are commanding an increasing share of the photovoltaic marketplace. Due to the hazardous nature of the materials involved in their manufacture, it is important to control and render harmless those reactants that are not consumed as inert coating. Environmental control equipment used for such purposes must meet important safety, throughput, efficiency, and reliability requirements. This report discusses the analytical methodology and performance results obtained for various environmental systems evaluated at a photovoltaic research facility.

  4. Controlled Fluxes of Silicon Nanoparticles By Extraction from a Pulsed RF Plasma

    NASA Astrophysics Data System (ADS)

    Girshick, Steven; Larriba-Andaluz, Carlos

    2015-09-01

    Deposition of silicon nanoparticles onto substrates may be a means of growing monocrystalline silicon films at low substrate temperature if the nanoparticles' impact energy and size can be controlled to provide melting or amorphization of the nanoparticle without damaging the underlying film. In order to explore conditions that could produce such controlled fluxes of nanoparticles we numerically model a pulsed RF argon-silane plasma, with a positive DC bias applied during the afterglow phase of each pulse so as to extract and accelerate negatively charged silicon particles. Operating parameters studied include pulse on time, pulse off time, DC bias voltage, RF voltage and pressure. This set of parameters is tested to find conditions under which one can achieve a periodic steady state with repeatable pulse-to-pulse conditions that maximize silicon film growth rates while maintaining nanoparticle impact energies in the range 0.5-2.0 eV/atom. We utilize a previously developed 1-D dusty plasma numerical model, modified to consider pulsing and applied substrate bias. This model self-consistently solves for the coupled behavior of plasma, chemistry, and aerosol. Results show that it is possible by this method to produce nanoparticle fluxes that are tailored with respect to their distribution of impact energies and mass deposition rates. Partially supported by US Dept. of Energy Office of Fusion Energy Science (DE-SC0001939), US National Science Foundation (CHE-124752), and Minnesota Supercomputing Institute.

  5. A 17 GHz molecular rectifier

    NASA Astrophysics Data System (ADS)

    Trasobares, J.; Vuillaume, D.; Théron, D.; Clément, N.

    2016-10-01

    Molecular electronics originally proposed that small molecules sandwiched between electrodes would accomplish electronic functions and enable ultimate scaling to be reached. However, so far, functional molecular devices have only been demonstrated at low frequency. Here, we demonstrate molecular diodes operating up to 17.8 GHz. Direct current and radio frequency (RF) properties were simultaneously measured on a large array of molecular junctions composed of gold nanocrystal electrodes, ferrocenyl undecanethiol molecules and the tip of an interferometric scanning microwave microscope. The present nanometre-scale molecular diodes offer a current density increase by several orders of magnitude compared with that of micrometre-scale molecular diodes, allowing RF operation. The measured S11 parameters show a diode rectification ratio of 12 dB which is linked to the rectification behaviour of the direct current conductance. From the RF measurements, we extrapolate a cut-off frequency of 520 GHz. A comparison with the silicon RF-Schottky diodes, architecture suggests that the RF-molecular diodes are extremely attractive for scaling and high-frequency operation.

  6. Silicon-Germanium Voltage-Controlled Oscillator at 105 GHz

    NASA Technical Reports Server (NTRS)

    Wong, Alden; Larocca, Tim; Chang, M. Frank; Samoska, Lorene A.

    2011-01-01

    A group at UCLA, in collaboration with the Jet Propulsion Laboratory, has designed a voltage-controlled oscillator (VCO) created specifically for a compact, integrated, electronically tunable frequency generator useable for submillimeter- wave science instruments operating in extreme cold environments.

  7. Local bandgap control of germanium by silicon nitride stressor.

    PubMed

    Kuroyanagi, R; Nguyen, L M; Tsuchizawa, T; Ishikawa, Y; Yamada, K; Wada, K

    2013-07-29

    We have proposed a new approach to tune the operation wavelength of Franz-Keldysh Ge electro-absorption modulation in Si photonics by controlling the local strain environment to cover the whole range of C + L bands (1.53 - 1.62 μm). The present paper shows a proof of strain-tuning modulator concept by the shift of the Ge absorption edge using SiN(x) stressor films and Franz-Keldysh effect in strain-controlled Ge.

  8. 46 CFR 129.360 - Semiconductor-rectifier systems.

    Code of Federal Regulations, 2010 CFR

    2010-10-01

    ... 46 Shipping 4 2010-10-01 2010-10-01 false Semiconductor-rectifier systems. 129.360 Section 129.360... INSTALLATIONS Power Sources and Distribution Systems § 129.360 Semiconductor-rectifier systems. (a) Each semiconductor-rectifier system must have an adequate heat-removal system to prevent overheating. (b) If...

  9. 46 CFR 120.360 - Semiconductor rectifier systems.

    Code of Federal Regulations, 2010 CFR

    2010-10-01

    ... 46 Shipping 4 2010-10-01 2010-10-01 false Semiconductor rectifier systems. 120.360 Section 120.360... INSTALLATION Power Sources and Distribution Systems § 120.360 Semiconductor rectifier systems. (a) Each semiconductor rectifier system must have an adequate heat removal system that prevents overheating. (b) Where...

  10. 46 CFR 120.360 - Semiconductor rectifier systems.

    Code of Federal Regulations, 2011 CFR

    2011-10-01

    ... INSTALLATION Power Sources and Distribution Systems § 120.360 Semiconductor rectifier systems. (a) Each semiconductor rectifier system must have an adequate heat removal system that prevents overheating. (b) Where a... 46 Shipping 4 2011-10-01 2011-10-01 false Semiconductor rectifier systems. 120.360 Section...

  11. 46 CFR 183.360 - Semiconductor rectifier systems.

    Code of Federal Regulations, 2011 CFR

    2011-10-01

    ... TONS) ELECTRICAL INSTALLATION Power Sources and Distribution Systems § 183.360 Semiconductor rectifier systems. (a) Each semiconductor rectifier system must have an adequate heat removal system that prevents... 46 Shipping 7 2011-10-01 2011-10-01 false Semiconductor rectifier systems. 183.360 Section...

  12. 46 CFR 129.360 - Semiconductor-rectifier systems.

    Code of Federal Regulations, 2011 CFR

    2011-10-01

    ... INSTALLATIONS Power Sources and Distribution Systems § 129.360 Semiconductor-rectifier systems. (a) Each semiconductor-rectifier system must have an adequate heat-removal system to prevent overheating. (b) If a... 46 Shipping 4 2011-10-01 2011-10-01 false Semiconductor-rectifier systems. 129.360 Section...

  13. 46 CFR 120.360 - Semiconductor rectifier systems.

    Code of Federal Regulations, 2014 CFR

    2014-10-01

    ... INSTALLATION Power Sources and Distribution Systems § 120.360 Semiconductor rectifier systems. (a) Each semiconductor rectifier system must have an adequate heat removal system that prevents overheating. (b) Where a... 46 Shipping 4 2014-10-01 2014-10-01 false Semiconductor rectifier systems. 120.360 Section...

  14. 46 CFR 120.360 - Semiconductor rectifier systems.

    Code of Federal Regulations, 2012 CFR

    2012-10-01

    ... INSTALLATION Power Sources and Distribution Systems § 120.360 Semiconductor rectifier systems. (a) Each semiconductor rectifier system must have an adequate heat removal system that prevents overheating. (b) Where a... 46 Shipping 4 2012-10-01 2012-10-01 false Semiconductor rectifier systems. 120.360 Section...

  15. 46 CFR 183.360 - Semiconductor rectifier systems.

    Code of Federal Regulations, 2012 CFR

    2012-10-01

    ... TONS) ELECTRICAL INSTALLATION Power Sources and Distribution Systems § 183.360 Semiconductor rectifier systems. (a) Each semiconductor rectifier system must have an adequate heat removal system that prevents... 46 Shipping 7 2012-10-01 2012-10-01 false Semiconductor rectifier systems. 183.360 Section...

  16. 46 CFR 183.360 - Semiconductor rectifier systems.

    Code of Federal Regulations, 2013 CFR

    2013-10-01

    ... TONS) ELECTRICAL INSTALLATION Power Sources and Distribution Systems § 183.360 Semiconductor rectifier systems. (a) Each semiconductor rectifier system must have an adequate heat removal system that prevents... 46 Shipping 7 2013-10-01 2013-10-01 false Semiconductor rectifier systems. 183.360 Section...

  17. 46 CFR 183.360 - Semiconductor rectifier systems.

    Code of Federal Regulations, 2014 CFR

    2014-10-01

    ... TONS) ELECTRICAL INSTALLATION Power Sources and Distribution Systems § 183.360 Semiconductor rectifier systems. (a) Each semiconductor rectifier system must have an adequate heat removal system that prevents... 46 Shipping 7 2014-10-01 2014-10-01 false Semiconductor rectifier systems. 183.360 Section...

  18. 46 CFR 129.360 - Semiconductor-rectifier systems.

    Code of Federal Regulations, 2014 CFR

    2014-10-01

    ... INSTALLATIONS Power Sources and Distribution Systems § 129.360 Semiconductor-rectifier systems. (a) Each semiconductor-rectifier system must have an adequate heat-removal system to prevent overheating. (b) If a... 46 Shipping 4 2014-10-01 2014-10-01 false Semiconductor-rectifier systems. 129.360 Section...

  19. 46 CFR 129.360 - Semiconductor-rectifier systems.

    Code of Federal Regulations, 2013 CFR

    2013-10-01

    ... INSTALLATIONS Power Sources and Distribution Systems § 129.360 Semiconductor-rectifier systems. (a) Each semiconductor-rectifier system must have an adequate heat-removal system to prevent overheating. (b) If a... 46 Shipping 4 2013-10-01 2013-10-01 false Semiconductor-rectifier systems. 129.360 Section...

  20. 46 CFR 120.360 - Semiconductor rectifier systems.

    Code of Federal Regulations, 2013 CFR

    2013-10-01

    ... INSTALLATION Power Sources and Distribution Systems § 120.360 Semiconductor rectifier systems. (a) Each semiconductor rectifier system must have an adequate heat removal system that prevents overheating. (b) Where a... 46 Shipping 4 2013-10-01 2013-10-01 false Semiconductor rectifier systems. 120.360 Section...

  1. 46 CFR 129.360 - Semiconductor-rectifier systems.

    Code of Federal Regulations, 2012 CFR

    2012-10-01

    ... INSTALLATIONS Power Sources and Distribution Systems § 129.360 Semiconductor-rectifier systems. (a) Each semiconductor-rectifier system must have an adequate heat-removal system to prevent overheating. (b) If a... 46 Shipping 4 2012-10-01 2012-10-01 false Semiconductor-rectifier systems. 129.360 Section...

  2. Improving Memory Characteristics of Hydrogenated Nanocrystalline Silicon Germanium Nonvolatile Memory Devices by Controlling Germanium Contents.

    PubMed

    Kim, Jiwoong; Jang, Kyungsoo; Phu, Nguyen Thi Cam; Trinh, Thanh Thuy; Raja, Jayapal; Kim, Taeyong; Cho, Jaehyun; Kim, Sangho; Park, Jinjoo; Jung, Junhee; Lee, Youn-Jung; Yi, Junsin

    2016-05-01

    Nonvolatile memory (NVM) with silicon dioxide/silicon nitride/silicon oxynitride (ONO(n)) charge trap structure is a promising flash memory technology duo that will fulfill process compatibility for system-on-panel displays, down-scaling cell size and low operation voltage. In this research, charge trap flash devices were fabricated with ONO(n) stack gate insulators and an active layer using hydrogenated nanocrystalline silicon germanium (nc-SiGe:H) films at a low temperature. In this study, the effect of the interface trap density on the performance of devices, including memory window and retention, was investigated. The electrical characteristics of NVM devices were studied controlling Ge content from 0% to 28% in the nc-SiGe:H channel layer. The optimal Ge content in the channel layer was found to be around 16%. For nc-SiGe:H NVM with 16% Ge content, the memory window was 3.13 V and the retention data exceeded 77% after 10 years under the programming condition of 15 V for 1 msec. This showed that the memory window increased by 42% and the retention increased by 12% compared to the nc-Si:H NVM that does not contain Ge. However, when the Ge content was more than 16%, the memory window and retention property decreased. Finally, this research showed that the Ge content has an effect on the interface trap density and this enabled us to determine the optimal Ge content. PMID:27483856

  3. Wafer-scale synthesis of single-crystal zigzag silicon nanowire arrays with controlled turning angles.

    PubMed

    Chen, Huan; Wang, Hui; Zhang, Xiao-Hong; Lee, Chun-Sing; Lee, Shuit-Tong

    2010-03-10

    Silicon nanowires (SiNWs) having curved structures may have unique advantages in device fabrication. However, no methods are available to prepare curved SiNWs controllably. In this work, we report the preparation of three types of single-crystal SiNWs with various turning angles via metal-assisted chemical etching using (111)-oriented silicon wafers near room temperature. The zigzag SiNWs are single crystals and can be p- or n-doped using corresponding Si wafer as substrate. The controlled growth direction is attributed to the preferred movement of Ag nanoparticles along 001 and other directions in Si wafer. Our results demonstrate that metal-assisted chemical etching may be a viable approach to fabricate SiNWs with desired turning angles by utilizing the various crystalline directions in a Si wafer.

  4. Quantum Entanglement and Spin Control in Silicon Nanocrystal

    PubMed Central

    Berec, Vesna

    2012-01-01

    Selective coherence control and electrically mediated exchange coupling of single electron spin between triplet and singlet states using numerically derived optimal control of proton pulses is demonstrated. We obtained spatial confinement below size of the Bohr radius for proton spin chain FWHM. Precise manipulation of individual spins and polarization of electron spin states are analyzed via proton induced emission and controlled population of energy shells in pure 29Si nanocrystal. Entangled quantum states of channeled proton trajectories are mapped in transverse and angular phase space of 29Si axial channel alignment in order to avoid transversal excitations. Proton density and proton energy as impact parameter functions are characterized in single particle density matrix via discretization of diagonal and nearest off-diagonal elements. We combined high field and low densities (1 MeV/92 nm) to create inseparable quantum state by superimposing the hyperpolarizationed proton spin chain with electron spin of 29Si. Quantum discretization of density of states (DOS) was performed by the Monte Carlo simulation method using numerical solutions of proton equations of motion. Distribution of gaussian coherent states is obtained by continuous modulation of individual spin phase and amplitude. Obtained results allow precise engineering and faithful mapping of spin states. This would provide the effective quantum key distribution (QKD) and transmission of quantum information over remote distances between quantum memory centers for scalable quantum communication network. Furthermore, obtained results give insights in application of channeled protons subatomic microscopy as a complete versatile scanning-probe system capable of both quantum engineering of charged particle states and characterization of quantum states below diffraction limit linear and in-depth resolution. PACS numbers: 03.65.Ud, 03.67.Bg, 61.85.+p, 67.30.hj PMID:23028884

  5. Formation of size controlled silicon nanocrystals in nitrogen free silicon dioxide matrix prepared by plasma enhanced chemical vapor deposition

    SciTech Connect

    Laube, J. Gutsch, S.; Hiller, D.; Zacharias, M.; Bruns, M.; Kübel, C.; Weiss, C.

    2014-12-14

    This paper reports the growth of silicon nanocrystals (SiNCs) from SiH4–O{sub 2} plasma chemistry. The formation of an oxynitride was avoided by using O{sub 2} instead of the widely used N{sub 2}O as precursor. X-ray photoelectron spectroscopy is used to prove the absence of nitrogen in the layers and determine the film stoichiometry. It is shown that the Si rich film growth is achieved via non-equilibrium deposition that resembles a interphase clusters mixture model. Photoluminescence and Fourier transformed infrared spectroscopy are used to monitor the formation process of the SiNCs, to reveal that the phase separation is completed at lower temperatures as for SiNCs based on oxynitrides. Additionally, transmission electron microscopy proves that the SiNC sizes are well controllable by superlattice configuration, and as a result, the optical emission band of the Si nanocrystal can be tuned over a wide range.

  6. Coherent control of single spins in a silicon carbide pn junction device at room temperature

    NASA Astrophysics Data System (ADS)

    Lee, Sang-Yun; Widmann, Matthias; Booker, Ian; Niethammer, Matthias; Ohshima, Takeshi; Gali, Adam; Son, Nguyen T.; Janzén, Erik; Wrachtrup, Joerg

    Spins in single defects have been studied for quantum information science and quantum metrology. It has been proven that spins of the single nitrogen-vacancy (NV) centers in diamond can be used as a quantum bit, and a single spin sensor operating at ambient conditions. Recently, there has been a growing interest in a new material in which color centers similar to NV centers can be created and whose electrical properties can also be well controlled, thus existing electronic devices can easily be adapted as a platform for quantum applications. We recently reported that single spins of negatively charged silicon vacancies in SiC can be coherently controlled and long-lived at room temperature. As a next step, we isolated single silicon vacancies in a SiC pn junction device and investigated how the change in Fermi level, induced by applying bias, alters the charge state of silicon vacancies, thus affects the spin state control. This study will allow us to envision quantum applications based on single defects incorporated in modern electronic devices.

  7. Fabrication of disposable topographic silicon oxide from sawtoothed patterns: control of arrays of gold nanoparticles.

    PubMed

    Cho, Heesook; Yoo, Hana; Park, Soojin

    2010-05-18

    Disposable topographic silicon oxide patterns were fabricated from polymeric replicas of sawtoothed glass surfaces, spin-coating of poly(dimethylsiloxane) (PDMS) thin films, and thermal annealing at certain temperature and followed by oxygen plasma treatment of the thin PDMS layer. A simple imprinting process was used to fabricate the replicated PDMS and PS patterns from sawtoothed glass surfaces. Next, thin layers of PDMS films having different thicknesses were spin-coated onto the sawtoothed PS surfaces and annealed at 60 degrees C to be drawn the PDMS into the valley of the sawtoothed PS surfaces, followed by oxygen plasma treatment to fabricate topographic silicon oxide patterns. By control of the thickness of PDMS layers, silicon oxide patterns having various line widths were fabricated. The silicon oxide topographic patterns were used to direct the self-assembly of polystyrene-block-poly(2-vinylpyridine) (PS-b-P2VP) block copolymer thin films via solvent annealing process. A highly ordered PS-b-P2VP micellar structure was used to let gold precursor complex with P2VP chains, and followed by oxygen plasma treatment. When the PS-b-P2VP thin films containing gold salts were exposed to oxygen plasma environments, gold salts were reduced to pure gold nanoparticles without changing high degree of lateral order, while polymers were completely degraded. As the width of trough and crest in topographic patterns increases, the number of gold arrays and size of gold nanoparticles are tuned. In the final step, the silicon oxide topographic patterns were selectively removed by wet etching process without changing the arrays of gold nanoparticles.

  8. SLiM-cut thin silicon wafering with enhanced crack and stress control

    NASA Astrophysics Data System (ADS)

    Vaes, Jan; Masolin, Alex; Pesquera, Amaia; Dross, Frédéric

    2010-08-01

    The 'Stress induced LIft-off Method' (SLiM-Cut) is a kerf-free method for thin silicon fabrication, being developed at imec for photovoltaic applications [1]. This method makes particularly efficient use of bulk material, thus cutting down the Si cost. SLIM-Cut uses a metallic layer on top of thick silicon substrate. The bonding is achieved at high temperature. Quenching the assembly down to room temperature builds up stress inside the material. The system relaxes by propagating a crack parallel to the metal-silicon interface. The propagation of this crack over the entire surface allows the formation of a silicon foil. The choice of the stress inducing layer is of the utmost importance: (1) the interfacial strength has to be high enough for the crack to grow in the Si lattice, (2) the metal migration has to be limited in order not to compromise the PV conversion efficiency, and (3) the deposition method of the stressing layer should be compatible with PV cell processing. The focus is laid on the two main compromises of the technology today: the precise control of the stress applied to the substrate, and the metal-Si interface. Regarding the control of the stress applied, we have intentionally initiated the crack. Better control of the crack propagation was demonstrated. Tuning of the temperature becomes therefore possible and lift-off was achieved for temperature processing as low as 700°C. Although all crystal orientations (including <100>) have been successfully lifted-off, the choice of the crystal orientation influences strongly the final result. Regarding the metal-Si interface, a detail elemental study has enabled us to identify the composition of the interface layers responsible for good adhesion to the Si. This investigation is also the first step to the engineering of specific paste and cleaning solutions.

  9. Control of valley dynamics in silicon quantum dots in the presence of an interface step

    NASA Astrophysics Data System (ADS)

    Boross, Péter; Széchenyi, Gábor; Culcer, Dimitrie; Pályi, András

    2016-07-01

    Recent experiments on silicon nanostructures have seen breakthroughs toward scalable, long-lived quantum information processing. The valley degree of freedom plays a fundamental role in these devices, and the two lowest-energy electronic states of a silicon quantum dot can form a valley qubit. In this paper, we show that a single-atom high step at the silicon/barrier interface induces a strong interaction of the qubit and in-plane electric fields and that the strength of this interaction can be controlled by varying the relative position of the electron and the step. We analyze the consequences of this enhanced interaction on the dynamics of the qubit. The charge densities of the qubit states are deformed differently by the interface step, allowing nondemolition qubit readout via valley-to-charge conversion. A gate-induced in-plane electric field together with the interface step enables fast control of the valley qubit via electrically driven valley resonance. We calculate single- and two-qubit gate times, as well as relaxation and dephasing times, and present predictions for the parameter range where the gate times can be much shorter than the relaxation time and dephasing is reduced.

  10. Fabrication of ultrathin and highly uniform silicon on insulator by numerically controlled plasma chemical vaporization machining.

    PubMed

    Sano, Yasuhisa; Yamamura, Kazuya; Mimura, Hidekazu; Yamauchi, Kazuto; Mori, Yuzo

    2007-08-01

    Metal-oxide semiconductor field-effect transistors fabricated on a silicon-on-insulator (SOI) wafer operate faster and at a lower power than those fabricated on a bulk silicon wafer. Scaling down, which improves their performances, demands thinner SOI wafers. In this article, improvement on the thinning of SOI wafers by numerically controlled plasma chemical vaporization machining (PCVM) is described. PCVM is a gas-phase chemical etching method in which reactive species generated in atmospheric-pressure plasma are used. Some factors affecting uniformity are investigated and methods for improvements are presented. As a result of thinning a commercial 8 in. SOI wafer, the initial SOI layer thickness of 97.5+/-4.7 nm was successfully thinned and made uniform at 7.5+/-1.5 nm.

  11. Gate-controlled-diodes in silicon-on-sapphire: A computer simulation

    NASA Technical Reports Server (NTRS)

    Gassaway, J. D.

    1974-01-01

    The computer simulation of the electrical behavior of a Gate-Controlled Diode (GCD) fabricated in Silicon-On-Sapphire (SOS) was described. A procedure for determining lifetime profiles from capacitance and reverse current measurements on the GCD was established. Chapter 1 discusses the SOS structure and points out the need of lifetime profiles to assist in device design for GCD's and bipolar transistors. Chapter 2 presents the one-dimensional analytical formula for electrostatic analysis of the SOS-GCD which are useful for data interpretation and setting boundary conditions on a simplified two-dimensional analysis. Chapter 3 gives the results of a two-dimensional analysis which treats the field as one-dimensional until the silicon film is depleted and the field penetrates the sapphire substrate. Chapter 4 describes a more complete two-dimensional model and gives results of programs implementing the model.

  12. Improvement of thickness uniformity of bulk silicon wafer by numerically controlled local wet etching

    NASA Astrophysics Data System (ADS)

    Nagano, Mikinori; Mitani, Takuro; Ueda, Kazuaki; Zettsu, Nobuyuki; Yamamura, Kazuya

    2009-04-01

    We have developed numerically controlled local wet etching (NC-LWE) as a novel deterministic subaperture figuring and finishing method, which is suitable for fabricating various optical components and for finishing functional materials. In this method, a chemical reaction between the etchant and the surface of the workpiece removes the surface without degrading the physical properties of the workpiece material. Furthermore, the processing properties of NC-LWE are insensitive to external disturbances, such as the vibration or thermal deformation of the machine or the workpiece, because of its noncontact removal mechanism. By applying the NC-LWE process using a HF/HNO 3 mixture to etch silicon, we corrected the thickness distribution of a bulk silicon wafer with a diameter of 200 mm and achieved a total thickness variation of less than 0.23 μm within a diameter of 190 mm.

  13. Optimal locomotion of mechanical rectifier systems

    NASA Astrophysics Data System (ADS)

    Blair, Justin T.

    Vehicles utilizing animal locomotion mechanisms may possess increased performance parameters and the ability to overcome more difficult terrain than conventional wheel or propeller driven vehicles. The essential mechanism underlying animal locomotion can be viewed as mechanical rectification that converts periodic body movements to thrust force through interactions with the environment. This dissertation defines a general class of mechanical rectifiers as multi-body systems equipped with such thrust generation mechanisms. A general model is developed from the Euler-Lagrange equation and simplified by assuming small body oscillations around a given nominal posture. The model reveals that the rectifying dynamics can be captured by a bilinear (but not linear) term of body shape variables. An optimal gait problem is formulated for the bilinear rectifier model as a minimization of a quadratic cost function over the set of periodic functions subject to a constraint on the average locomotion velocity. We prove that a globally optimal solution is given by a harmonic gait that can be found by generalized eigenvalue computation with a line search over cycle frequencies. We verify the solution method through case studies of a two dimensional chain of links for which snake-like undulations and jellyfish-like flapping gaits are found to be optimal, and obtain analytical insights into determinants of optimal gaits from a simple disk-mass rectifier system. Lastly, we develop a dynamic model for batoid swimming featuring a 6 degree-of-freedom main body (position and orientation), with independent wing deformation (described as the motion of many discrete points in the body-fixed coordinate frame), and calculate various gaits. Multiple wing shapes and optimality criteria are considered, such as the maximum thrust to deflection ratio or minimum input power, and the resulting gaits are compared.

  14. Polypropylene vs silicone Ahmed valve with adjunctive mitomycin C in paediatric age group: a prospective controlled study

    PubMed Central

    El Sayed, Y; Awadein, A

    2013-01-01

    Purpose To compare the results of silicone and polypropylene Ahmed glaucoma valves (AGV) implanted during the first 10 years of life. Methods A prospective study was performed on 50 eyes of 33 patients with paediatric glaucoma. Eyes were matched to either polypropylene or silicone AGV. In eyes with bilateral glaucoma, one eye was implanted with polypropylene and the other eye was implanted with silicone AGV. Results Fifty eyes of 33 children were reviewed. Twenty five eyes received a polypropylene valve, and 25 eyes received a silicone valve. Eyes implanted with silicone valves achieved a significantly lower intraocular pressure (IOP) compared with the polypropylene group at 6 months, 1 year, and 2 years postoperatively. The average survival time was significantly longer (P=0.001 by the log-rank test) for the silicone group than for the polypropylene group and the cumulative probability of survival by the log-rank test at the end of the second year was 80% (SE: 8.0, 95% confidence interval (CI): 64–96%) in the silicone group and 56% (SE: 9.8, 95% CI: 40–90%) in the polypropylene group. The difference in the number of postoperative interventions and complications between both groups was statistically insignificant. Conclusion Silicone AGVs can achieve better IOP control, and longer survival with less antiglaucoma drops compared with polypropylene valves in children younger than 10 years. PMID:23579403

  15. Development of uniform density control with self-assembled colloidal gold nanoparticles on a modified silicon substrate.

    PubMed

    Kang, ChanKyu; Ashurst, Robert W; Shim, Jae-Jin; Huh, Yun Suk; Roh, Changhyun

    2014-10-01

    Here, we present a simple method for controlling the density of Au nanoparticles (Au NPs) on a modified silicon substrate, by destabilizing the colloidal Au NPs with 3-mercaptopropyltrimethoxylsilane (3-MPTMS) for microelectromechanical-system-based applications to reduce tribological issues. A silicon surface was pretreated with a 3-MPTMS solution, immediately after which thiolated Au NPs were added to it, resulting in their uniform deposition on the silicon substrate. Without any material property change of the colloidal Au NPs, we observed the formation of large clusters Au NPs on the modified silicon surface. Analysis by scanning electron microscopy with energy dispersive X-ray spectroscopy indicated that the addition of 3-MPTMS resulted in an alternation of the chemical characteristics of the solution. Atomic force microscopy imaging supported the notion that silicon surface modification is the most important factor on tribological properties of materials along with ligand-modified Au NPs. The density of Au NPs on a silicon surface was significantly dependent on several factors, including the concentration of colloidal Au NPs, deposition time, and concentration of 3-MPTMS solution, while temperature range which was used throughout experiment was determined to have no significant effect. A relatively high density of Au NPs forms on the silicon surface as the concentrations of Au NPs and 3-MPTMS are increased. In addition, the maximum deposition of Au NPs on silicon wafer was observed at 3 h, while the effects of temperature variation were minimal.

  16. Laser power supply with a newly designed thyristor three-phase rectifier

    SciTech Connect

    Wang Shikang; Xue Bin

    1987-11-01

    A new design of thyristor full-wave rectifier is introduced. Differing from the traditional synchronizing and triggering modes, the rectifier uses an opto-electric coupler as the isolator and a counter-EPROM set as the pulse controller. Though both the analogue and digital modes are involved in the processing of signal transmission, the main process which included the series-phase-shifting and the parallel-triggering is done with digital circuits. So, in addition to the merits of simplicity and reliability, a key advantage is the high stability against disturbance. It can be the first choice for laser power supplies.

  17. A Simple Method for Reducing the Transient Oscillation in Single-Phase Buck Rectifiers

    NASA Astrophysics Data System (ADS)

    Wakakuwa, Yukihiro; Motegi, Shin-Ich; Yoshida, Toshiya; Miyashita, Osamu

    The single-phase buck rectifier has several advantages, such as the controllability of lower dc output voltages, and negligible inrush input-current at start-up. However, the rectifier requires an LC-filter connected on the input side of the switching device to absorb the harmonics caused by the on and off behavior. The LC-filter involves an LC resonance in transient states. To solve this problem, a suppression approach using only a series RLC circuit, which selectively acts as a damping at around the resonant frequency, is proposed. Simulation and experimental results confirm the validity of this method.

  18. Self- and dopant diffusion in extrinsic boron doped isotopically controlled silicon multilayer structures

    SciTech Connect

    Sharp, Ian D.; Bracht, Hartmut A.; Silvestri, Hughes H.; Nicols, Samuel P.; Beeman, Jeffrey W.; Hansen, John L.; Nylandsted Larsen, Arne; Haller, Eugene E.

    2002-04-01

    Isotopically controlled silicon multilayer structures were used to measure the enhancement of self- and dopant diffusion in extrinsic boron doped silicon. {sup 30}Si was used as a tracer through a multilayer structure of alternating natural Si and enriched {sup 28}Si layers. Low energy, high resolution secondary ion mass spectrometry (SIMS) allowed for simultaneous measurement of self- and dopant diffusion profiles of samples annealed at temperatures between 850 C and 1100 C. A specially designed ion- implanted amorphous Si surface layer was used as a dopant source to suppress excess defects in the multilayer structure, thereby eliminating transient enhanced diffusion (TED) behavior. Self- and dopant diffusion coefficients, diffusion mechanisms, and native defect charge states were determined from computer-aided modeling, based on differential equations describing the diffusion processes. We present a quantitative description of B diffusion enhanced self-diffusion in silicon and conclude that the diffusion of both B and Si is mainly mediated by neutral and singly positively charged self-interstitials under p-type doping. No significant contribution of vacancies to either B or Si diffusion is observed.

  19. A CMOS microdisplay with integrated controller utilizing improved silicon hot carrier luminescent light sources

    NASA Astrophysics Data System (ADS)

    Venter, Petrus J.; Alberts, Antonie C.; du Plessis, Monuko; Joubert, Trudi-Heleen; Goosen, Marius E.; Janse van Rensburg, Christo; Rademeyer, Pieter; Fauré, Nicolaas M.

    2013-03-01

    Microdisplay technology, the miniaturization and integration of small displays for various applications, is predominantly based on OLED and LCoS technologies. Silicon light emission from hot carrier electroluminescence has been shown to emit light visibly perceptible without the aid of any additional intensification, although the electrical to optical conversion efficiency is not as high as the technologies mentioned above. For some applications, this drawback may be traded off against the major cost advantage and superior integration opportunities offered by CMOS microdisplays using integrated silicon light sources. This work introduces an improved version of our previously published microdisplay by making use of new efficiency enhanced CMOS light emitting structures and an increased display resolution. Silicon hot carrier luminescence is often created when reverse biased pn-junctions enter the breakdown regime where impact ionization results in carrier transport across the junction. Avalanche breakdown is typically unwanted in modern CMOS processes. Design rules and process design are generally tailored to prevent breakdown, while the voltages associated with breakdown are too high to directly interact with the rest of the CMOS standard library. This work shows that it is possible to lower the operating voltage of CMOS light sources without compromising the optical output power. This results in more efficient light sources with improved interaction with other standard library components. This work proves that it is possible to create a reasonably high resolution microdisplay while integrating the active matrix controller and drivers on the same integrated circuit die without additional modifications, in a standard CMOS process.

  20. Large area and structured epitaxial graphene produced by confinement controlled sublimation of silicon carbide.

    PubMed

    de Heer, Walt A; Berger, Claire; Ruan, Ming; Sprinkle, Mike; Li, Xuebin; Hu, Yike; Zhang, Baiqian; Hankinson, John; Conrad, Edward

    2011-10-11

    After the pioneering investigations into graphene-based electronics at Georgia Tech, great strides have been made developing epitaxial graphene on silicon carbide (EG) as a new electronic material. EG has not only demonstrated its potential for large scale applications, it also has become an important material for fundamental two-dimensional electron gas physics. It was long known that graphene mono and multilayers grow on SiC crystals at high temperatures in ultrahigh vacuum. At these temperatures, silicon sublimes from the surface and the carbon rich surface layer transforms to graphene. However the quality of the graphene produced in ultrahigh vacuum is poor due to the high sublimation rates at relatively low temperatures. The Georgia Tech team developed growth methods involving encapsulating the SiC crystals in graphite enclosures, thereby sequestering the evaporated silicon and bringing growth process closer to equilibrium. In this confinement controlled sublimation (CCS) process, very high-quality graphene is grown on both polar faces of the SiC crystals. Since 2003, over 50 publications used CCS grown graphene, where it is known as the "furnace grown" graphene. Graphene multilayers grown on the carbon-terminated face of SiC, using the CCS method, were shown to consist of decoupled high mobility graphene layers. The CCS method is now applied on structured silicon carbide surfaces to produce high mobility nano-patterned graphene structures thereby demonstrating that EG is a viable contender for next-generation electronics. Here we present for the first time the CCS method that outperforms other epitaxial graphene production methods.

  1. Gate-controlled diode structure based electro-optical interfaces in standard silicon-CMOS integrated circuitry.

    PubMed

    Xu, Kaikai; Liu, Haitao; Zhang, Zhengyuan

    2015-07-20

    In this paper, we discuss the emission of visible light by a monolithically integrated silicon gate-controlled diode with the p-n junction reverse-biased. Since the MOS-like diode utilizes the field effect to modulate the optical output, the modulation speed will benefit from this mechanism. Hence, a silicon gate-controlled diode structure for optical modulation analyzed its modulation principle, its dynamic characteristics are presented, and the bandwidth of the device is considered to approach GHz in theory due to the field-induced emission mechanism. The prototype MOS-like diode opens up the design of multiterminal silicon light emitting devices (LEDs), where gate electrodes with more than one gate contact overlap several junctions with different junction intersection geometries. The device appears as a good candidate for optical modulation within silicon technology. PMID:26367823

  2. Hydrogenated amorphous silicon formation by flux control and hydrogen effects on the growth mechanism

    NASA Astrophysics Data System (ADS)

    Toyoda, H.; Sugai, H.; Kato, K.; Yoshida, A.; Okuda, T.

    1986-06-01

    The composition of particle flux to deposit hydrogenated amorphous silicon films in a glow discharge is controlled by a combined electrostatic-magnetic deflection technique. As a result, the films are formed firstly without hydrogen ion flux, secondly by neutral flux only, and thirdly by all species fluxes. Comparison of these films reveals the significant role of hydrogen in the surface reactions. Hydrogen breaks the Si-Si bond, decreases the sticking probability of the Si atom, and replaces the SiH bond by a SiH2 bond to increase the hydrogen content of the films.

  3. Electrically conductive, black thermal control coatings for space craft application. II - Silicone matrix formulation

    NASA Technical Reports Server (NTRS)

    Hribar, V. F.; Bauer, J. L.; O'Donnell, T. P.

    1986-01-01

    Five black electrically conductive thermal-control coatings have been formulated and tested for application on the Galileo spacecraft. The coatings consisted of organic and inorganic systems applied on titanium and aluminum surfaces. The coatings were tested under simulated space environment conditions. Coated specimens were subjected to thermal radiation and convective and conductive heating from -196 to 538 C. Mechanical, physical, thermal, electrical, and optical characteristics, formulation, mixing, application, surface preparation of substrates, and a method of determining electrical resistance are presented for the silicone matrix formulation designated as GF-580.

  4. Pore Size Control of Ultra-thin Silicon Membranes by Rapid Thermal Carbonization

    PubMed Central

    Fang, David Z.; Striemer, Christopher C.; Gaborski, Thomas R.; McGrath, James L.; Fauchet, Philippe M.

    2010-01-01

    Rapid thermal carbonization in a dilute acetylene (C2H2) atmosphere has been used to chemically modify and precisely tune the pore size of ultrathin porous nanocrystalline silicon (pnc-Si). The magnitude of size reduction was controlled by varying the process temperature and time. Under certain conditions, the carbon coating displayed atomic ordering indicative of graphene layer formation conformal to the pore walls. Initial experiments show that carbonized membranes follow theoretical predictions for hydraulic permeability and retain the precise separation capabilities of untreated membranes. PMID:20839831

  5. Self-organizing microstructures orientation control in femtosecond laser patterning on silicon surface.

    PubMed

    Liu, Pengjun; Jiang, Lan; Hu, Jie; Zhang, Shuai; Lu, Yongfeng

    2014-07-14

    Self-organizing rippled microstructures are induced on silicon surface by linearly polarized femtosecond laser pulses. At a near threshold fluence, it is observed that ripple orientation is co-determined by the laser polarization direction and laser scanning parameters (scanning direction and scanning speed) in surface patterning process. Under fixed laser polarization, the ripple orientation can be controlled to rotate by about 40° through changing laser scanning parameters. In addition, it is also observed that the ripple morphology is sensitive to the laser scanning direction, and it is an optimal choice to obtain ordered ripple structures when the angle between laser scanning and laser polarization is less than 45°.

  6. A feedback silicon-on-insulator steep switching device with gate-controlled carrier injection

    NASA Astrophysics Data System (ADS)

    Wan, J.; Cristoloveanu, S.; Le Royer, C.; Zaslavsky, A.

    2012-10-01

    We experimentally demonstrate a field-effect transistor with a single front gate built on fully-depleted silicon-on-insulator substrate that possesses extremely steep switching slope (≪1 mV/decade) and gate-controllable hysteresis. The mechanism for the sharp switching, confirmed by simulations, involves the positive feedback between the gate-modulated charge injection barriers and the electron and hole components of the source-drain current. The transistor is named Z2-FET as it features zero impact ionization (unlike thyristors) and zero subthreshold swing.

  7. Controlled blueshift of the resonant wavelength in porous silicon microcavities using ion irradiation

    SciTech Connect

    Mangaiyarkarasi, D.; Breese, M. B. H.; Ow, Y. S.; Vijila, C.

    2006-07-10

    High-energy focused proton beam irradiation has been used to controllably blueshift the resonant wavelength of porous silicon microcavities in heavily doped p-type wafers. Irradiation results in an increased resistivity, hence a locally reduced rate of anodization. Irradiated regions are consequently thinner and of a higher refractive index than unirradiated regions, and the microcavity blueshift arises from a net reduction in the optical thickness of each porous layer. Using this process wafers are patterned on a micrometer lateral scale with microcavities tuned to different resonant wavelengths, giving rise to high-resolution full-color reflection images over the full visible spectrum.

  8. Controlling the spectrum of photons generated on a silicon nanophotonic chip

    PubMed Central

    Kumar, Ranjeet; Ong, Jun Rong; Savanier, Marc; Mookherjea, Shayan

    2014-01-01

    Directly modulated semiconductor lasers are widely used, compact light sources in optical communications. Semiconductors can also be used to generate nonclassical light; in fact, CMOS-compatible silicon chips can be used to generate pairs of single photons at room temperature. Unlike the classical laser, the photon-pair source requires control over a two-dimensional joint spectral intensity (JSI) and it is not possible to process the photons separately, as this could destroy the entanglement. Here we design a photon-pair source, consisting of planar lightwave components fabricated using CMOS-compatible lithography in silicon, which has the capability to vary the JSI. By controlling either the optical pump wavelength, or the temperature of the chip, we demonstrate the ability to select different JSIs, with a large variation in the Schmidt number. Such control can benefit high-dimensional communications where detector-timing constraints can be relaxed by realizing a large Schmidt number in a small frequency range. PMID:25410792

  9. Open Air Silicon Deposition by Atmospheric Pressure Plasma under Local Ambient Gas Control

    NASA Astrophysics Data System (ADS)

    Naito, Teruki; Konno, Nobuaki; Yoshida, Yukihisa

    2015-09-01

    In this paper, we report open air silicon (Si) deposition by combining a silane free Si deposition technology and a newly developed local ambient gas control technology. Recently, material processing in open air has been investigated intensively. While a variety of materials have been deposited, there were only few reports on Si deposition due to the susceptibility to contamination and the hazardous nature of source materials. Since Si deposition is one of the most important processes in device fabrication, we have developed open air silicon deposition technologies in BEANS project. For a clean and safe process, a local ambient gas control head was designed. Process gas leakage was prevented by local evacuation, and air contamination was shut out by inert curtain gas. By numerical and experimental investigations, a safe and clean process condition with air contamination less than 10 ppm was achieved. Si film was deposited in open air by atmospheric pressure plasma enhanced chemical transport under the local ambient gas control. The film was microcrystalline Si with the crystallite size of 17 nm, and the Hall mobility was 2.3 cm2/V .s. These properties were comparable to those of Si films deposited in a vacuum chamber. This research has been conducted as one of the research items of New Energy and Industrial Technology Development Organization ``BEANS'' project.

  10. Development of high temperature gallium phosphide rectifiers

    NASA Technical Reports Server (NTRS)

    Craford, M. G.; Keune, D. L.

    1972-01-01

    Large area high performance, GaP rectifiers were fabricated by means of Zn diffusion into vapor phase epitaxial GaP. Devices with an active area of 0.01 sq cm typically exhibit forward voltages of 3 volts for a bias current of 1 ampere and have reverse breakdown voltages of 300 volts for temperatures from 27 C to 400 C. Typical device reverse saturation current at a reverse bias of 150 volts is less than 10 to the minus 9th power amp at 27 C and less than 0.000050 amp at 400 C.

  11. Controllable electrical and physical breakdown of poly-crystalline silicon nanowires by thermally assisted electromigration

    PubMed Central

    Park, Jun-Young; Moon, Dong-Il; Seol, Myeong-Lok; Jeon, Chang-Hoon; Jeon, Gwang-Jae; Han, Jin-Woo; Kim, Choong-Ki; Park, Sang-Jae; Lee, Hee Chul; Choi, Yang-Kyu

    2016-01-01

    The importance of poly-crystalline silicon (poly-Si) in semiconductor manufacturing is rapidly increasing due to its highly controllable conductivity and excellent, uniform deposition quality. With the continuing miniaturization of electronic components, low dimensional structures such as 1-dimensional nanowires (NWs) have attracted a great deal of attention. But such components have a much higher current density than 2- or 3- dimensional films, and high current can degrade device lifetime and lead to breakdown problems. Here, we report on the electrical and thermal characteristics of poly-Si NWs, which can also be used to control electrical and physical breakdown under high current density. This work reports a controllable catastrophic change of poly-Si NWs by thermally-assisted electromigration and underlying mechanisms. It also reports the direct and real time observation of these catastrophic changes of poly-Si nanowires for the first time, using scanning electron microscopy. PMID:26782708

  12. Controllable electrical and physical breakdown of poly-crystalline silicon nanowires by thermally assisted electromigration.

    PubMed

    Park, Jun-Young; Moon, Dong-Il; Seol, Myeong-Lok; Jeon, Chang-Hoon; Jeon, Gwang-Jae; Han, Jin-Woo; Kim, Choong-Ki; Park, Sang-Jae; Lee, Hee Chul; Choi, Yang-Kyu

    2016-01-01

    The importance of poly-crystalline silicon (poly-Si) in semiconductor manufacturing is rapidly increasing due to its highly controllable conductivity and excellent, uniform deposition quality. With the continuing miniaturization of electronic components, low dimensional structures such as 1-dimensional nanowires (NWs) have attracted a great deal of attention. But such components have a much higher current density than 2- or 3-dimensional films, and high current can degrade device lifetime and lead to breakdown problems. Here, we report on the electrical and thermal characteristics of poly-Si NWs, which can also be used to control electrical and physical breakdown under high current density. This work reports a controllable catastrophic change of poly-Si NWs by thermally-assisted electromigration and underlying mechanisms. It also reports the direct and real time observation of these catastrophic changes of poly-Si nanowires for the first time, using scanning electron microscopy. PMID:26782708

  13. Electrical detection of dengue virus (DENV) DNA oligomer using silicon nanowire biosensor with novel molecular gate control.

    PubMed

    Nuzaihan M N, M; Hashim, U; Md Arshad, M K; Kasjoo, S R; Rahman, S F A; Ruslinda, A R; Fathil, M F M; Adzhri, R; Shahimin, M M

    2016-09-15

    In this paper, a silicon nanowire biosensor with novel molecular gate control has been demonstrated for Deoxyribonucleic acid (DNA) detection related to dengue virus (DENV). The silicon nanowire was fabricated using the top-down nanolithography approach, through nanostructuring of silicon-on-insulator (SOI) layers achieved by combination of the electron-beam lithography (EBL), plasma dry etching and size reduction processes. The surface of the fabricated silicon nanowire was functionalized by means of a three-step procedure involving surface modification, DNA immobilization and hybridization. This procedure acts as a molecular gate control to establish the electrical detection for 27-mers base targets DENV DNA oligomer. The electrical detection is based on the changes in current, resistance and conductance of the sensor due to accumulation of negative charges added by the immobilized probe DNA and hybridized target DNA. The sensitivity of the silicon nanowire biosensors attained was 45.0µAM(-1), which shows a wide-range detection capability of the sensor with respect to DNA. The limit of detection (LOD) achieved was approximately 2.0fM. The demonstrated results show that the silicon nanowire has excellent properties for detection of DENV with outstanding repeatability and reproducibility performances.

  14. Precision control of thermal transport in cryogenic single-crystal silicon devices

    SciTech Connect

    Rostem, K.; Chuss, D. T.; Colazo, F. A.; Crowe, E. J.; Denis, K. L.; Lourie, N. P.; Moseley, S. H.; Stevenson, T. R.; Wollack, E. J.

    2014-03-28

    We report on the diffusive-ballistic thermal conductance of multi-moded single-crystal silicon beams measured below 1 K. It is shown that the phonon mean-free-path ℓ is a strong function of the surface roughness characteristics of the beams. This effect is enhanced in diffuse beams with lengths much larger than ℓ, even when the surface is fairly smooth, 5–10 nm rms, and the peak thermal wavelength is 0.6 μm. Resonant phonon scattering has been observed in beams with a pitted surface morphology and characteristic pit depth of 30 nm. Hence, if the surface roughness is not adequately controlled, the thermal conductance can vary significantly for diffuse beams fabricated across a wafer. In contrast, when the beam length is of order ℓ, the conductance is dominated by ballistic transport and is effectively set by the beam cross-sectional area. We have demonstrated a uniformity of ±8% in fractional deviation for ballistic beams, and this deviation is largely set by the thermal conductance of diffuse beams that support the micro-electro-mechanical device and electrical leads. In addition, we have found no evidence for excess specific heat in single-crystal silicon membranes. This allows for the precise control of the device heat capacity with normal metal films. We discuss the results in the context of the design and fabrication of large-format arrays of far-infrared and millimeter wavelength cryogenic detectors.

  15. Valley-enhanced fast relaxation of gate-controlled donor qubits in silicon

    NASA Astrophysics Data System (ADS)

    Boross, Péter; Széchenyi, Gábor; Pályi, András

    2016-08-01

    Gate control of donor electrons near interfaces is a generic ingredient of donor-based quantum computing. Here, we address the question: how is the phonon-assisted qubit relaxation time T 1 affected as the electron is shuttled between the donor and the interface? We focus on the example of the ‘flip-flop qubit’ (Tosi et al arXiv:1509.08538v1), defined as a combination of the nuclear and electronic states of a phosphorus donor in silicon, promising fast electrical control and long dephasing times when the electron is halfway between the donor and the interface. We theoretically describe orbital relaxation, flip-flop relaxation, and electron spin relaxation. We estimate that the flip-flop qubit relaxation time can be of the order of 100 μs, 8 orders of magnitude shorter than the value for an on-donor electron in bulk silicon, and a few orders of magnitude shorter (longer) than the predicted inhomogeneous dephasing time (gate times). All three relaxation processes are boosted by (i) the nontrivial valley structure of the electron–phonon interaction, and (ii) the different valley compositions of the involved electronic states.

  16. Valley-enhanced fast relaxation of gate-controlled donor qubits in silicon.

    PubMed

    Boross, Péter; Széchenyi, Gábor; Pályi, András

    2016-08-01

    Gate control of donor electrons near interfaces is a generic ingredient of donor-based quantum computing. Here, we address the question: how is the phonon-assisted qubit relaxation time T 1 affected as the electron is shuttled between the donor and the interface? We focus on the example of the 'flip-flop qubit' (Tosi et al arXiv:1509.08538v1), defined as a combination of the nuclear and electronic states of a phosphorus donor in silicon, promising fast electrical control and long dephasing times when the electron is halfway between the donor and the interface. We theoretically describe orbital relaxation, flip-flop relaxation, and electron spin relaxation. We estimate that the flip-flop qubit relaxation time can be of the order of 100 μs, 8 orders of magnitude shorter than the value for an on-donor electron in bulk silicon, and a few orders of magnitude shorter (longer) than the predicted inhomogeneous dephasing time (gate times). All three relaxation processes are boosted by (i) the nontrivial valley structure of the electron-phonon interaction, and (ii) the different valley compositions of the involved electronic states. PMID:27334425

  17. Precision Control of Thermal Transport in Cryogenic Single-Crystal Silicon Devices

    NASA Technical Reports Server (NTRS)

    Rostem, K.; Chuss, D. T.; Colazo, F. A.; Crowe, E. J.; Denis, K. L.; Lourie, N. P.; Moseley, S. H.; Stevenson, T. R.; Wollack, E. J.

    2014-01-01

    We report on the diffusive-ballistic thermal conductance of multi-moded single-crystal silicon beams measured below 1 K. It is shown that the phonon mean-free-path is a strong function of the surface roughness characteristics of the beams. This effect is enhanced in diffuse beams with lengths much larger than, even when the surface is fairly smooth, 510 nm rms, and the peak thermal wavelength is 0.6 microns. Resonant phonon scattering has been observed in beams with a pitted surface morphology and characteristic pit depth of 30 nm. Hence, if the surface roughness is not adequately controlled, the thermal conductance can vary significantly for diffuse beams fabricated across a wafer. In contrast, when the beam length is of order, the conductance is dominated by ballistic transport and is effectively set by the beam cross-sectional area. We have demonstrated a uniformity of +/-8% in fractional deviation for ballistic beams, and this deviation is largely set by the thermal conductance of diffuse beams that support the micro-electro-mechanical device and electrical leads. In addition, we have found no evidence for excess specific heat in single-crystal silicon membranes. This allows for the precise control of the device heat capacity with normal metal films. We discuss the results in the context of the design and fabrication of large-format arrays of far-infrared and millimeter wavelength cryogenic detectors.

  18. Control of the Pore Texture in Nanoporous Silicon via Chemical Dissolution.

    PubMed

    Secret, Emilie; Wu, Chia-Chen; Chaix, Arnaud; Galarneau, Anne; Gonzalez, Philippe; Cot, Didier; Sailor, Michael J; Jestin, Jacques; Zanotti, Jean-Marc; Cunin, Frédérique; Coasne, Benoit

    2015-07-28

    The surface and textural properties of porous silicon (pSi) control many of its physical properties essential to its performance in key applications such as optoelectronics, energy storage, luminescence, sensing, and drug delivery. Here, we combine experimental and theoretical tools to demonstrate that the surface roughness at the nanometer scale of pSi can be tuned in a controlled fashion using partial thermal oxidation followed by removal of the resulting silicon oxide layer with hydrofluoric acid (HF) solution. Such a process is shown to smooth the pSi surface by means of nitrogen adsorption, electron microscopy, and small-angle X-ray and neutron scattering. Statistical mechanics Monte Carlo simulations, which are consistent with the experimental data, support the interpretation that the pore surface is initially rough and that the oxidation/oxide removal procedure diminishes the surface roughness while increasing the pore diameter. As a specific example considered in this work, the initial roughness ξ ∼ 3.2 nm of pSi pores having a diameter of 7.6 nm can be decreased to 1.0 nm following the simple procedure above. This study allows envisioning the design of pSi samples with optimal surface properties toward a specific process.

  19. Atomic-Scale Control of Silicon Expansion Space as Ultrastable Battery Anodes.

    PubMed

    Zhu, Jian; Wang, Tao; Fan, Fengru; Mei, Lin; Lu, Bingan

    2016-09-27

    Development of electrode materials with high capability and long cycle life are central issues for lithium-ion batteries (LIBs). Here, we report an architecture of three-dimensional (3D) flexible silicon and graphene/carbon nanofibers (FSiGCNFs) with atomic-scale control of the expansion space as the binder-free anode for flexible LIBs. The FSiGCNFs with Si nanoparticles surrounded by accurate and controllable void spaces ensure excellent mechanical strength and afford sufficient space to overcome the damage caused by the volume expansion of Si nanoparticles during charge and discharge processes. This 3D porous structure possessing built-in void space between the Si and graphene/carbon matrix not only limits most solid-electrolyte interphase formation to the outer surface, instead of on the surface of individual NPs, and increases its stability but also achieves highly efficient channels for the fast transport of both electrons and lithium ions during cycling, thus offering outstanding electrochemical performance (2002 mAh g(-1) at a current density of 700 mA g(-1) over 1050 cycles corresponding to 3840 mAh g(-1) for silicon alone and 582 mAh g(-1) at the highest current density of 28 000 mA g(-1)).

  20. Valley-enhanced fast relaxation of gate-controlled donor qubits in silicon

    NASA Astrophysics Data System (ADS)

    Boross, Péter; Széchenyi, Gábor; Pályi, András

    2016-08-01

    Gate control of donor electrons near interfaces is a generic ingredient of donor-based quantum computing. Here, we address the question: how is the phonon-assisted qubit relaxation time T 1 affected as the electron is shuttled between the donor and the interface? We focus on the example of the ‘flip-flop qubit’ (Tosi et al arXiv:1509.08538v1), defined as a combination of the nuclear and electronic states of a phosphorus donor in silicon, promising fast electrical control and long dephasing times when the electron is halfway between the donor and the interface. We theoretically describe orbital relaxation, flip-flop relaxation, and electron spin relaxation. We estimate that the flip-flop qubit relaxation time can be of the order of 100 μs, 8 orders of magnitude shorter than the value for an on-donor electron in bulk silicon, and a few orders of magnitude shorter (longer) than the predicted inhomogeneous dephasing time (gate times). All three relaxation processes are boosted by (i) the nontrivial valley structure of the electron-phonon interaction, and (ii) the different valley compositions of the involved electronic states.

  1. Atomic-Scale Control of Silicon Expansion Space as Ultrastable Battery Anodes.

    PubMed

    Zhu, Jian; Wang, Tao; Fan, Fengru; Mei, Lin; Lu, Bingan

    2016-09-27

    Development of electrode materials with high capability and long cycle life are central issues for lithium-ion batteries (LIBs). Here, we report an architecture of three-dimensional (3D) flexible silicon and graphene/carbon nanofibers (FSiGCNFs) with atomic-scale control of the expansion space as the binder-free anode for flexible LIBs. The FSiGCNFs with Si nanoparticles surrounded by accurate and controllable void spaces ensure excellent mechanical strength and afford sufficient space to overcome the damage caused by the volume expansion of Si nanoparticles during charge and discharge processes. This 3D porous structure possessing built-in void space between the Si and graphene/carbon matrix not only limits most solid-electrolyte interphase formation to the outer surface, instead of on the surface of individual NPs, and increases its stability but also achieves highly efficient channels for the fast transport of both electrons and lithium ions during cycling, thus offering outstanding electrochemical performance (2002 mAh g(-1) at a current density of 700 mA g(-1) over 1050 cycles corresponding to 3840 mAh g(-1) for silicon alone and 582 mAh g(-1) at the highest current density of 28 000 mA g(-1)). PMID:27462725

  2. Valley-enhanced fast relaxation of gate-controlled donor qubits in silicon.

    PubMed

    Boross, Péter; Széchenyi, Gábor; Pályi, András

    2016-08-01

    Gate control of donor electrons near interfaces is a generic ingredient of donor-based quantum computing. Here, we address the question: how is the phonon-assisted qubit relaxation time T 1 affected as the electron is shuttled between the donor and the interface? We focus on the example of the 'flip-flop qubit' (Tosi et al arXiv:1509.08538v1), defined as a combination of the nuclear and electronic states of a phosphorus donor in silicon, promising fast electrical control and long dephasing times when the electron is halfway between the donor and the interface. We theoretically describe orbital relaxation, flip-flop relaxation, and electron spin relaxation. We estimate that the flip-flop qubit relaxation time can be of the order of 100 μs, 8 orders of magnitude shorter than the value for an on-donor electron in bulk silicon, and a few orders of magnitude shorter (longer) than the predicted inhomogeneous dephasing time (gate times). All three relaxation processes are boosted by (i) the nontrivial valley structure of the electron-phonon interaction, and (ii) the different valley compositions of the involved electronic states.

  3. Silicon spintronics.

    PubMed

    Jansen, Ron

    2012-04-23

    Worldwide efforts are underway to integrate semiconductors and magnetic materials, aiming to create a revolutionary and energy-efficient information technology in which digital data are encoded in the spin of electrons. Implementing spin functionality in silicon, the mainstream semiconductor, is vital to establish a spin-based electronics with potential to change information technology beyond imagination. Can silicon spintronics live up to the expectation? Remarkable advances in the creation and control of spin polarization in silicon suggest so. Here, I review the key developments and achievements, and describe the building blocks of silicon spintronics. Unexpected and puzzling results are discussed, and open issues and challenges identified. More surprises lie ahead as silicon spintronics comes of age.

  4. High Voltage GaN Schottky Rectifiers

    SciTech Connect

    CAO,X.A.; CHO,H.; CHU,S.N.G.; CHUO,C.-C.; CHYI,J.-I.; DANG,G.T.; HAN,JUNG; LEE,C.-M.; PEARTON,S.J.; REN,F.; WILSON,R.G.; ZHANG,A.P.

    1999-10-25

    Mesa and planar GaN Schottky diode rectifiers with reverse breakdown voltages (V{sub RB}) up to 550V and >2000V, respectively, have been fabricated. The on-state resistance, R{sub ON}, was 6m{Omega}{center_dot} cm{sup 2} and 0.8{Omega}cm{sup 2}, respectively, producing figure-of-merit values for (V{sub RB}){sup 2}/R{sub ON} in the range 5-48 MW{center_dot}cm{sup -2}. At low biases the reverse leakage current was proportional to the size of the rectifying contact perimeter, while at high biases the current was proportional to the area of this contact. These results suggest that at low reverse biases, the leakage is dominated by the surface component, while at higher biases the bulk component dominates. On-state voltages were 3.5V for the 550V diodes and {ge}15 for the 2kV diodes. Reverse recovery times were <0.2{micro}sec for devices switched from a forward current density of {approx}500A{center_dot}cm{sup -2} to a reverse bias of 100V.

  5. Controlled Release of Dexamethasone From an Intravitreal Delivery System Using Porous Silicon Dioxide

    PubMed Central

    Hou, Huiyuan; Wang, Chengyun; Nan, Kaihui; Freeman, William R.; Sailor, Michael J.; Cheng, Lingyun

    2016-01-01

    Purpose The current study aims to evaluate a porous silicon-based drug delivery system meant for sustained delivery of dexamethasone (Dex) to the vitreous and retina. Methods Dexamethasone was grafted covalently into the pore walls of fully oxidized porous silicon particles (pSiO2-COO-Dex), which then was evaluated for the pharmacological effect of the payload on cultured ARPE19 cells before intravitreal injection. The Dex release profile was investigated in a custom designed dynamic dissolution chamber to mimic the turnover of vitreous fluid in rabbit eyes. Ocular safety, in vivo release, and pharmacodynamics were evaluated in rabbit eyes, and the human VEGF-induced rabbit retinal vascular permeability model. Results Loading efficiency of Dex was 69 ± 9 μg per 1 mg of the pSiO2-COO-Dex particles. Dynamic in vitro release demonstrated a sustained mode when compared to free Dex, with the drug half-life extended by 5 times. The released Dex was unaltered and biologically active. In vivo drug release in rabbit eyes revealed a mode similar to the release seen in vitro, with a vitreous half-life of 11 days. At 2 and 4 weeks after a single intravitreal injection of pSiO2-COO-Dex particles (mean 2.71 ± 0.47 mg), intravitreal 500 ng of VEGF did not induce significant retinal vessel dilation or fluorescein leakage, while these events were observed in the eyes injected with empty pSiO2 particles or with free Dex. The retinal vessel score from fluorescein angiography for the control eyes was double the score for the eyes injected with pSiO2-COO-Dex. No adverse reaction was observed for the eyes injected with drug-loaded pSi particles during the course of the study. Conclusions The porous silicon-based Dex delivery system (pSiO2-COO-Dex) can be administered safely into vitreous without toxicity. Dex release from the porous silicon particles was sustained for 2 months and was effective against VEGF-induced retinal vessel reaction. PMID:26882530

  6. Formation of composite polyacrylamide and silicone substrates for independent control of stiffness and strain

    PubMed Central

    Simmons, Chelsey S.; Ribeiro, Alexandre J. S.; Pruitt, Beth L.

    2013-01-01

    Cells that line major tissues in the body such as blood vessels, lungs and gastrointestinal tract experience deformation from mechanical strain with our heartbeat, breathing, and other daily activities. Tissues also remodel in both development and disease, changing their mechanical properties. Taken together, cells can experience vastly different mechanical cues resulting from the combination of these interdependent stimuli. To date, most studies of cellular mechanotransduction have been limited to assays in which variations in substrate stiffness and strain were not combined. Here, we address this technological gap by implementing a method that can simultaneously tune both substrate stiffness and mechanical strain. Substrate stiffness is controlled with different monomer and crosslinker ratios during polyacrylamide gel polymerization, and strain is transferred from the underlying silicone platform when stretched. We demonstrate this platform with polyacrylamide gels with elastic moduli at 6 kPa and 20 kPa in combination with two different silicone formulations. The gels remain attached with up to 50% applied strains. To validate strain transfer through the gels into cells, we employ particle-tracking methods and observe strain transmission via cell morphological changes. PMID:23287818

  7. High-Efficiency Harmonically Terminated Diode and Transistor Rectifiers

    SciTech Connect

    Roberg, M; Reveyrand, T; Ramos, I; Falkenstein, EA; Popovic, Z

    2012-12-01

    This paper presents a theoretical analysis of harmonically terminated high-efficiency power rectifiers and experimental validation on a class-C single Schottky-diode rectifier and a class-F-1 GaN transistor rectifier. The theory is based on a Fourier analysis of current and voltage waveforms, which arise across the rectifying element when different harmonic terminations are presented at its terminals. An analogy to harmonically terminated power amplifier (PA) theory is discussed. From the analysis, one can obtain an optimal value for the dc load given the RF circuit design. An upper limit on rectifier efficiency is derived for each case as a function of the device on-resistance. Measured results from fundamental frequency source-pull measurement of a Schottky diode rectifier with short-circuit terminations at the second and third harmonics are presented. A maximal device rectification efficiency of 72.8% at 2.45 GHz matches the theoretical prediction. A 2.14-GHz GaN HEMT rectifier is designed based on a class-F-1 PA. The gate of the transistor is terminated in an optimal impedance for self-synchronous rectification. Measurements of conversion efficiency and output dc voltage for varying gate RF impedance, dc load, and gate bias are shown with varying input RF power at the drain. The rectifier demonstrates an efficiency of 85% for a 10-W input RF power at the transistor drain with a dc voltage of 30 V across a 98-Omega resistor.

  8. A molecular half-wave rectifier.

    PubMed

    Nijhuis, Christian A; Reus, William F; Siegel, Adam C; Whitesides, George M

    2011-10-01

    This paper describes the performance of junctions based on self-assembled monolayers (SAMs) as the functional element of a half-wave rectifier (a simple circuit that converts, or rectifies, an alternating current (AC) signal to a direct current (DC) signal). Junctions with SAMs of 11-(ferrocenyl)-1-undecanethiol or 11-(biferrocenyl)-1-undecanethiol on ultraflat, template-stripped Ag (Ag(TS)) bottom electrodes, and contacted by top electrodes of eutectic indium-gallium (EGaIn), rectified AC signals, while similar junctions based on SAMs of 1-undecanethiol-SAMs lacking the ferrocenyl terminal group-did not. SAMs in these AC circuits (operating at 50 Hz) remain stable over a larger window of applied bias than in DC circuits. AC measurements, therefore, can investigate charge transport in SAM-based junctions at magnitudes of bias inaccessible to DC measurements. For junctions with SAMs of alkanethiols, combining the results from AC and DC measurements identifies two regimes of bias with different mechanisms of charge transport: (i) low bias (|V| < 1.3 V), at which direct tunneling dominates, and (ii) high bias (|V| > 1.3 V), at which Fowler-Nordheim (FN) tunneling dominates. For junctions with SAMs terminated by Fc moieties, the transition to FN tunneling occurs at |V| ≈ 2.0 V. Furthermore, at sufficient forward bias (V > 0.5 V), hopping makes a significant contribution to charge transport and occurs in series with direct tunneling (V ≲ 2.0 V) until FN tunneling activates (V ≳ 2.0 V). Thus, for Fc-terminated SAMs at forward bias, three regimes are apparent: (i) direct tunneling (V = 0-0.5 V), (ii) hopping plus direct tunneling (V ≈ 0.5-2.0 V), and (iii) FN tunneling (V ≳ 2.0 V). Since hopping does not occur at reverse bias, only two regimes are present over the measured range of reverse bias. This difference in the mechanisms of charge transport at forward and reverse bias for junctions with Fc moieties resulted in large rectification ratios (R > 100) and

  9. Neural induction suppresses early expression of the inward-rectifier K+ channel in the ascidian blastomere.

    PubMed Central

    Okamura, Y; Takahashi, K

    1993-01-01

    gastrula stage was sensitive to alpha-amanitin, a highly specific transcription inhibitor. In both induced and uninduced cells, injection of alpha-amanitin at the 32-cell stage reduced the current density of the inward-rectifier K+ channel to about 2 nA/nF, corresponding to 13% of that recorded from uninjected cells. By contrast, the expression of the fast-inactivating-type Na+ current, which transiently increased along with the inward-rectifier K+ channel, was resistant to alpha-amanitin injection. 6. The dose of alpha-amanitin injected was controlled by monitoring co-injected fluorescent dye, fura-2.(ABSTRACT TRUNCATED AT 400 WORDS) Images Fig. 6 Fig. 8 Fig. 11 PMID:8246182

  10. TEMPO/viologen electrochemical heterojunction for diffusion-controlled redox mediation: a highly rectifying bilayer-sandwiched device based on cross-reaction at the interface between dissimilar redox polymers.

    PubMed

    Tokue, Hiroshi; Oyaizu, Kenichi; Sukegawa, Takashi; Nishide, Hiroyuki

    2014-03-26

    A couple of totally reversible redox-active molecules, which are different in redox potentials, 2,2,6,6-tetramethylpiperidin-1-oxyl (TEMPO) and viologen (V(2+)), were employed to give rise to a rectified redox conduction effect. Single-layer and bilayer devices were fabricated using polymers containing these sites as pendant groups per repeating unit. The devices were obtained by sandwiching the redox polymer layer(s) with indium tin oxide (ITO)/glass and Pt foil electrodes. Electrochemical measurements of the single-layer device composed of polynorbornene-bearing TEMPO (PTNB) exhibited a diffusion-limited current-voltage response based on the TEMPO(+)/TEMPO exchange reaction, which was almost equivalent to a redox gradient through the PTNB layer depending upon the thickness. The bilayer device gave rise to the current rectification because of the thermodynamically favored cross-reaction between TEMPO(+) and V(+) at the polymer/polymer interface. A current-voltage response obtained for the bilayer device demonstrated a two-step diffusion-limited current behavior as a result of the concurrent V(2+)/V(+) and V(+)/V(0) exchange reactions according to the voltage and suggested that the charge transport process through the device was most likely to be rate-determined by a redox gradient in the polymer layer. Current collection experiments revealed a charge transport balance throughout the device, as a result of the electrochemical stability and robustness of the polymers in both redox states.

  11. Candidate locations for SPS rectifying antennas

    NASA Technical Reports Server (NTRS)

    Eberhardt, A. W.

    1977-01-01

    The feasibility of placing 120 Satellite Power System (SPS) rectifying antenna (rectenna) sites across the U.S. was studied. An initial attempt is made to put two land sites in each state using several land site selection criteria. When only 69 land sites are located, it is decided to put the remaining sites in the sea and sea site selection criteria are identified. An estimated projection of electrical demand distribution for the year 2000 is then used to determine the distribution of these sites along the Pacific, Atlantic, and Gulf Coasts. A methodology for distributing rectenna sites across the country and for fine-tuning exact locations is developed, and recommendations on rectenna design and operations are made.

  12. Do Aviram-Ratner diodes rectify?

    PubMed

    Stokbro, Kurt; Taylor, Jeremy; Brandbyge, Mads

    2003-04-01

    We present state-of-the-art first principles calculations for the IV characteristics of a donor-insulator-acceptor (DsigmaA) type molecular diode anchored with thiolate bonds to two gold electrodes. We find very poor diode characteristics of the device, and the origin of this is analyzed in terms of the bias-dependent electronic structure. At zero bias, the highest occupied molecular orbital (HOMO) is confined to the D part, and the lowest unoccupied molecular orbital (LUMO) is confined to the A part, while at 3.8 V the two states align, and this gives rise to an increasing current. The latter is a potential mechanism for rectification and may in some cases lead to favorable diode characteristics. We identify the origin of the vanishing rectification for the investigated molecule, and on the basis of this we suggest parameters which are important for successful chemical engineering of DsigmaA rectifiers.

  13. Electrical control of interfacial trapping for magnetic tunnel transistor on silicon

    SciTech Connect

    Lu, Y. Lacour, D.; Lengaigne, G.; Le Gall, S.; Suire, S.; Montaigne, F.; Hehn, M.; Wu, M. W.

    2014-01-27

    We demonstrate an electrical control of an interfacial trapping effect for hot electrons injected in silicon by studying a magnetic tunnel transistor on wafer bonded Si substrate. Below 25 K, hot electrons are trapped at the Cu/Si interface, resulting in collector current suppression through scattering in both parallel and antiparallel magnetic configurations. Consequently, the magneto-current ratio strongly decreases from 300% at 27 K to 30% at 22 K. The application of a relatively small electric field (∼333 V/cm) across the Cu/Si interface is enough to strip the trapped electrons and restore the magneto-current ratio at low temperature. We also present a model taking into account the effects of both electric field and temperature that closely reproduces the experimental results and allows extraction of the trapping binding energy (∼1.6 meV)

  14. Doping strategies to control A-centres in silicon: insights from hybrid density functional theory.

    PubMed

    Wang, H; Chroneos, A; Londos, C A; Sgourou, E N; Schwingenschlögl, U

    2014-05-14

    Hybrid density functional theory is used to gain insights into the interaction of intrinsic vacancies (V) and oxygen-vacancy pairs (VO, known as A-centres) with the dopants (D) germanium (Ge), tin (Sn), and lead (Pb) in silicon (Si). We determine the structures as well as binding and formation energies of the DVO and DV complexes. The results are discussed in terms of the density of states and in view of the potential of isovalent doping to control A-centres in Si. We argue that doping with Sn is the most efficient isovalent doping strategy to suppress A-centres by the formation of SnVO complexes, as these are charge neutral and strongly bound.

  15. Controllable surface-plasmon resonance in engineered nanometer epitaxial silicide particles embedded in silicon

    NASA Technical Reports Server (NTRS)

    Fathauer, R. W.; Ksendzov, A.; Iannelli, J. M.; George, T.

    1991-01-01

    Epitaxial CoSi2 particles in a single-crystal silicon matrix are grown by molecular-beam epitaxy using a technique that allows nanometer control over particle size in three dimensions. These composite layers exhibit resonant absorption predicted by effective-medium theory. Selection of the height and diameter of disklike particles through a choice of growth conditions allows tailoring of the depolarization factor and hence of the surface-plasmon resonance energy. Resonant absorption from 0.49 to 1.04 eV (2.5 to 1.2 micron) is demonstrated and shown to agree well with values predicted by the Garnett (1904, 1906) theory using the bulk dielectric constants for CoSi2 and Si.

  16. Dynamic control of a Fano resonance with a fully integrated silicon nanostructure

    NASA Astrophysics Data System (ADS)

    Bera, Arijit; Roussey, Matthieu; Kuittinen, Markku; Honkanen, Seppo

    2016-03-01

    We present the theoretical analysis and design of a novel slotted photonic crystal geometry to demonstrate an on-chip Fano resonance. The device employs three parallel-coupled slotted photonic crystal cavities on an SOI wafer. We present a systematic analysis of the evolution of the Fano line-shape, while the geometric parameters of the structure and the inter-cavity distances vary. To achieve the dynamic tunability of the Fano resonance, we have considered an active electro-optic chromophore as the cover material of our slot-based geometry. This paves a novel way towards the demonstration of a fully-integrated, electrically-controllable Fano resonant geometry on a silicon-polymer platform.

  17. Room temperature coherent control of defect spin qubits in silicon carbide.

    PubMed

    Koehl, William F; Buckley, Bob B; Heremans, F Joseph; Calusine, Greg; Awschalom, David D

    2011-11-01

    Electronic spins in semiconductors have been used extensively to explore the limits of external control over quantum mechanical phenomena. A long-standing goal of this research has been to identify or develop robust quantum systems that can be easily manipulated, for future use in advanced information and communication technologies. Recently, a point defect in diamond known as the nitrogen-vacancy centre has attracted a great deal of interest because it possesses an atomic-scale electronic spin state that can be used as an individually addressable, solid-state quantum bit (qubit), even at room temperature. These exceptional quantum properties have motivated efforts to identify similar defects in other semiconductors, as they may offer an expanded range of functionality not available to the diamond nitrogen-vacancy centre. Notably, several defects in silicon carbide (SiC) have been suggested as good candidates for exploration, owing to a combination of computational predictions and magnetic resonance data. Here we demonstrate that several defect spin states in the 4H polytype of SiC (4H-SiC) can be optically addressed and coherently controlled in the time domain at temperatures ranging from 20 to 300 kelvin. Using optical and microwave techniques similar to those used with diamond nitrogen-vacancy qubits, we study the spin-1 ground state of each of four inequivalent forms of the neutral carbon-silicon divacancy, as well as a pair of defect spin states of unidentified origin. These defects are optically active near telecommunication wavelengths, and are found in a host material for which there already exist industrial-scale crystal growth and advanced microfabrication techniques. In addition, they possess desirable spin coherence properties that are comparable to those of the diamond nitrogen-vacancy centre. This makes them promising candidates for various photonic, spintronic and quantum information applications that merge quantum degrees of freedom with classical

  18. Development of open air silicon deposition technology by silane-free atmospheric pressure plasma enhanced chemical transport under local ambient gas control

    NASA Astrophysics Data System (ADS)

    Naito, Teruki; Konno, Nobuaki; Yoshida, Yukihisa

    2016-07-01

    Open air silicon deposition was performed by combining silane-free atmospheric pressure plasma-enhanced chemical transport and a newly developed local ambient gas control technology. The effect of air contamination on silicon deposition was investigated using a vacuum chamber, and the allowable air contamination level was confirmed to be 3 ppm. The capability of the local ambient gas control head was investigated numerically and experimentally. A safe and clean process environment with air contamination less than 1 ppm was achieved. Combining these technologies, a microcrystalline silicon film was deposited in open air, the properties of which were comparable to those of silicon films deposited in a vacuum chamber.

  19. Role of silicone derivative plus onion extract gel in presternal hypertrophic scar protection: a prospective randomized, double blinded, controlled trial.

    PubMed

    Jenwitheesuk, Kamonwan; Surakunprapha, Palakorn; Jenwitheesuk, Kriangsak; Kuptarnond, Chusak; Prathanee, Sompop; Intanoo, Worawit

    2012-08-01

    Use of silicone derivative and onion extract had been reported in the prevention of hypertrophic scarring. Our experience showed the preventive use of silicone derivative plus onion extract gel on hypertrophic scars after median sternotomy. In a randomized, double blinded, placebo-controlled study, 60 patients after median sternotomy incisions were separated into two groups. All patients were treated either with silicone derivative plus onion extract gel (Cybele(®) scagel) or placebo gel twice daily for a total treatment period of 12 weeks. During each visit, pain and itching scores were graded by the patients and scar characteristics were observed by surgeons using the Vancouver scar scale. Pain and itch score values from patients' who applied silicone derivative plus onion extract gel was less than another group (P < 0·05). Pigmentation was significantly different between two groups (P < 0·05) and the reduction of scores on vascularity, pliability, height in treated group was not superior to the untreated group. No adverse events were reported by any of the patients. A silicone derivative plus onion extract gel is safe and effective for the preventing the hypertrophic scarring after median sternotomy. PMID:22168750

  20. Stress control of silicon nitride films deposited by plasma enhanced chemical vapor deposition

    NASA Astrophysics Data System (ADS)

    Li, Dong-ling; Feng, Xiao-fei; Wen, Zhi-yu; Shang, Zheng-guo; She, Yin

    2016-07-01

    Stress controllable silicon nitride (SiNx) films deposited by plasma enhanced chemical vapor deposition (PECVD) are reported. Low stress SiNx films were deposited in both high frequency (HF) mode and dual frequency (HF/LF) mode. By optimizing process parameters, stress free (-0.27 MPa) SiNx films were obtained with the deposition rate of 45.5 nm/min and the refractive index of 2.06. Furthermore, at HF/LF mode, the stress is significantly influenced by LF ratio and LF power, and can be controlled to be 10 MPa with the LF ratio of 17% and LF power of 150 W. However, LF power has a little effect on the deposition rate due to the interaction between HF power and LF power. The deposited SiNx films have good mechanical and optical properties, low deposition temperature and controllable stress, and can be widely used in integrated circuit (IC), micro-electro-mechanical systems (MEMS) and bio-MEMS.

  1. Cardiac Delayed Rectifier Potassium Channels in Health and Disease.

    PubMed

    Chen, Lei; Sampson, Kevin J; Kass, Robert S

    2016-06-01

    Cardiac delayed rectifier potassium channels conduct outward potassium currents during the plateau phase of action potentials and play pivotal roles in cardiac repolarization. These include IKs, IKr and the atrial specific IKur channels. In this article, we will review their molecular identities and biophysical properties. Mutations in the genes encoding delayed rectifiers lead to loss- or gain-of-function phenotypes, disrupt normal cardiac repolarization and result in various cardiac rhythm disorders, including congenital Long QT Syndrome, Short QT Syndrome and familial atrial fibrillation. We will also discuss the prospect of using delayed rectifier channels as therapeutic targets to manage cardiac arrhythmia. PMID:27261823

  2. Rectified optical force on dark-state atoms

    NASA Astrophysics Data System (ADS)

    Korsunsky, E. A.; Kosachiov, D. V.

    1997-12-01

    We show that an imperfection of velocity-selective coherent population trapping (VSCPT) in three-level atoms excited by standing light waves causes a rectified force on cooled atoms. The rectified force as well as the cooling force are calculated both analytically and numerically for 0953-4075/30/24/010/img5 and cascade three-level systems. Combination of these forces with the VSCPT mechanism can lead to localization of very cold atoms in potential wells created by the rectified force. This effect should be taken into account in experiments with VSCPT in standing waves, and can be used for realizing superlattices of cold atoms, in particular, cold Rydberg atoms.

  3. Nitrate-Dependent Control of Shoot K Homeostasis by the Nitrate Transporter1/Peptide Transporter Family Member NPF7.3/NRT1.5 and the Stelar K+ Outward Rectifier SKOR in Arabidopsis.

    PubMed

    Drechsler, Navina; Zheng, Yue; Bohner, Anne; Nobmann, Barbara; von Wirén, Nicolaus; Kunze, Reinhard; Rausch, Christine

    2015-12-01

    Root-to-shoot translocation and shoot homeostasis of potassium (K) determine nutrient balance, growth, and stress tolerance of vascular plants. To maintain the cation-anion balance, xylem loading of K(+) in the roots relies on the concomitant loading of counteranions, like nitrate (NO3 (-)). However, the coregulation of these loading steps is unclear. Here, we show that the bidirectional, low-affinity Nitrate Transporter1 (NRT1)/Peptide Transporter (PTR) family member NPF7.3/NRT1.5 is important for the NO3 (-)-dependent K(+) translocation in Arabidopsis (Arabidopsis thaliana). Lack of NPF7.3/NRT1.5 resulted in K deficiency in shoots under low NO3 (-) nutrition, whereas the root elemental composition was unchanged. Gene expression data corroborated K deficiency in the nrt1.5-5 shoot, whereas the root responded with a differential expression of genes involved in cation-anion balance. A grafting experiment confirmed that the presence of NPF7.3/NRT1.5 in the root is a prerequisite for proper root-to-shoot translocation of K(+) under low NO3 (-) supply. Because the depolarization-activated Stelar K(+) Outward Rectifier (SKOR) has previously been described as a major contributor for root-to-shoot translocation of K(+) in Arabidopsis, we addressed the hypothesis that NPF7.3/NRT1.5-mediated NO3 (-) translocation might affect xylem loading and root-to-shoot K(+) translocation through SKOR. Indeed, growth of nrt1.5-5 and skor-2 single and double mutants under different K/NO3 (-) regimes revealed that both proteins contribute to K(+) translocation from root to shoot. SKOR activity dominates under high NO3 (-) and low K(+) supply, whereas NPF7.3/NRT1.5 is required under low NO3 (-) availability. This study unravels nutritional conditions as a critical factor for the joint activity of SKOR and NPF7.3/NRT1.5 for shoot K homeostasis. PMID:26508776

  4. Nitrate-Dependent Control of Shoot K Homeostasis by the Nitrate Transporter1/Peptide Transporter Family Member NPF7.3/NRT1.5 and the Stelar K+ Outward Rectifier SKOR in Arabidopsis1[OPEN

    PubMed Central

    Drechsler, Navina; Zheng, Yue; Nobmann, Barbara; Rausch, Christine

    2015-01-01

    Root-to-shoot translocation and shoot homeostasis of potassium (K) determine nutrient balance, growth, and stress tolerance of vascular plants. To maintain the cation-anion balance, xylem loading of K+ in the roots relies on the concomitant loading of counteranions, like nitrate (NO3−). However, the coregulation of these loading steps is unclear. Here, we show that the bidirectional, low-affinity Nitrate Transporter1 (NRT1)/Peptide Transporter (PTR) family member NPF7.3/NRT1.5 is important for the NO3−-dependent K+ translocation in Arabidopsis (Arabidopsis thaliana). Lack of NPF7.3/NRT1.5 resulted in K deficiency in shoots under low NO3− nutrition, whereas the root elemental composition was unchanged. Gene expression data corroborated K deficiency in the nrt1.5-5 shoot, whereas the root responded with a differential expression of genes involved in cation-anion balance. A grafting experiment confirmed that the presence of NPF7.3/NRT1.5 in the root is a prerequisite for proper root-to-shoot translocation of K+ under low NO3− supply. Because the depolarization-activated Stelar K+ Outward Rectifier (SKOR) has previously been described as a major contributor for root-to-shoot translocation of K+ in Arabidopsis, we addressed the hypothesis that NPF7.3/NRT1.5-mediated NO3− translocation might affect xylem loading and root-to-shoot K+ translocation through SKOR. Indeed, growth of nrt1.5-5 and skor-2 single and double mutants under different K/NO3− regimes revealed that both proteins contribute to K+ translocation from root to shoot. SKOR activity dominates under high NO3− and low K+ supply, whereas NPF7.3/NRT1.5 is required under low NO3− availability. This study unravels nutritional conditions as a critical factor for the joint activity of SKOR and NPF7.3/NRT1.5 for shoot K homeostasis. PMID:26508776

  5. Silicon micromachining based on porous silicon formation

    SciTech Connect

    Guilinger, T.R.; Kelly, M.J.; Stevenson, J.O.; Howard, A.; Houston, J.E.; Tsao, S.S.

    1991-12-31

    We describe a new electrochemical processing technique based on porous silicon formation that can produce surface and buried insulators, conductors, and sacrificial layers required for silicon micromachining to fabricate micromechanical devices and sensors. Porosity and thickness of porous silicon layers for micromachining can be controlled to a relative precision better than 0.3% for porosities ranging from 20--80% and thicknesses ranging from sub- micron to hundreds of microns. The technique of using porous silicon has important implications for microfabrication of silicon electromechanical devices and sensors. The high relative precision in realizing a given thickness is superior to that obtained with conventional chemical etches. 8 refs.

  6. Silicon micromachining based on porous silicon formation

    SciTech Connect

    Guilinger, T.R.; Kelly, M.J.; Stevenson, J.O.; Howard, A.; Houston, J.E.; Tsao, S.S.

    1991-01-01

    We describe a new electrochemical processing technique based on porous silicon formation that can produce surface and buried insulators, conductors, and sacrificial layers required for silicon micromachining to fabricate micromechanical devices and sensors. Porosity and thickness of porous silicon layers for micromachining can be controlled to a relative precision better than 0.3% for porosities ranging from 20--80% and thicknesses ranging from sub- micron to hundreds of microns. The technique of using porous silicon has important implications for microfabrication of silicon electromechanical devices and sensors. The high relative precision in realizing a given thickness is superior to that obtained with conventional chemical etches. 8 refs.

  7. Graphene Triangular Ballistic Rectifier: Fabrication and Characterisation

    NASA Astrophysics Data System (ADS)

    Auton, Gregory; Kumar, Roshan Krishna; Hill, Ernie; Song, Aimin

    2016-09-01

    It has been shown that graphene can demonstrate ballistic transport at room temperature. This opens up a range of practical applications that do not require graphene to have a band gap, which is one of the most significant challenges for its use in the electronics industry. Here, the very latest high mobility graphene (>100,000 cm2 V-1 s-1) fabrication techniques will be demonstrated so that one such device, called the triangular ballistic rectifier (TBR), can be characterised. The TBR is a four-terminal device with a triangular anti-dot at their intersection; two sides of the triangle are positioned and angled such that ballistic carriers from the two input electrodes are redirected like billiard balls to one of the two output contacts irrespective of the instantaneous polarity of the input. A responsivity of 2400 mV mW-1 is demonstrated at room temperature from a low-frequency input signal. The ballistic nature of the device is justified and explained in more detail with low-temperature measurements.

  8. Precision envelope detector and linear rectifier circuitry

    DOEpatents

    Davis, Thomas J.

    1980-01-01

    Disclosed is a method and apparatus for the precise linear rectification and envelope detection of oscillatory signals. The signal is applied to a voltage-to-current converter which supplies current to a constant current sink. The connection between the converter and the sink is also applied through a diode and an output load resistor to a ground connection. The connection is also connected to ground through a second diode of opposite polarity from the diode in series with the load resistor. Very small amplitude voltage signals applied to the converter will cause a small change in the output current of the converter, and the difference between the output current and the constant current sink will be applied either directly to ground through the single diode, or across the output load resistor, dependent upon the polarity. Disclosed also is a full-wave rectifier utilizing constant current sinks and voltage-to-current converters. Additionally, disclosed is a combination of the voltage-to-current converters with differential integrated circuit preamplifiers to boost the initial signal amplitude, and with low pass filtering applied so as to obtain a video or signal envelope output.

  9. Cardiac Strong Inward Rectifier Potassium Channels

    PubMed Central

    Anumonwo, Justus MB; Lopatin, Anatoli N

    2009-01-01

    Cardiac IK1 and IKACh are the major potassium currents displaying classical strong inward rectification, a unique property that is critical for their roles in cardiac excitability. In the last fifteen years, research on IK1 and IKACh has been propelled by the cloning of the underlying inwardly rectifying potassium (Kir) channels, the discovery of the molecular mechanism of strong rectification and the linking of a number of disorders of cardiac excitability to defects in genes encoding Kir channels. Disease-causing mutations in Kir genes have been shown experimentally to affect one or more of the following channel properties: structure, assembly, trafficking and regulation, with the ultimate effect of a gain-, or a loss-of-function of the channel. It is now established that IK1 and IKACh channels are heterotetramers of Kir2 and Kir3 subunits, respectively. Each homomeric Kir channel has distinct biophysical and regulatory properties, and individual Kir subunits often display different patterns of regional, cellular and membrane distribution. These differences are thought to underlie important variations in the physiological properties of IK1 and IKACh. It has become increasingly clear that the contribution of IK1 and IKACh channels to cardiac electrical activity goes beyond their long recognized role in the stabilization of resting membrane potential and shaping the late phase of action potential repolarization in individual myocytes, but extends to being critical elements determining the overall electrical stability of the heart. PMID:19703462

  10. Implementation of Statistical Process Control: Evaluating the Mechanical Performance of a Candidate Silicone Elastomer Docking Seal

    NASA Technical Reports Server (NTRS)

    Oravec, Heather Ann; Daniels, Christopher C.

    2014-01-01

    The National Aeronautics and Space Administration has been developing a novel docking system to meet the requirements of future exploration missions to low-Earth orbit and beyond. A dynamic gas pressure seal is located at the main interface between the active and passive mating components of the new docking system. This seal is designed to operate in the harsh space environment, but is also to perform within strict loading requirements while maintaining an acceptable level of leak rate. In this study, a candidate silicone elastomer seal was designed, and multiple subscale test articles were manufactured for evaluation purposes. The force required to fully compress each test article at room temperature was quantified and found to be below the maximum allowable load for the docking system. However, a significant amount of scatter was observed in the test results. Due to the stochastic nature of the mechanical performance of this candidate docking seal, a statistical process control technique was implemented to isolate unusual compression behavior from typical mechanical performance. The results of this statistical analysis indicated a lack of process control, suggesting a variation in the manufacturing phase of the process. Further investigation revealed that changes in the manufacturing molding process had occurred which may have influenced the mechanical performance of the seal. This knowledge improves the chance of this and future space seals to satisfy or exceed design specifications.

  11. Maximal rectification ratios for idealized bi-segment thermal rectifiers.

    PubMed

    Shih, Tien-Mo; Gao, Zhaojing; Guo, Ziquan; Merlitz, Holger; Pagni, Patrick J; Chen, Zhong

    2015-08-04

    Thermal rectifiers whose forward heat fluxes are greater than reverse counterparts have been extensively studied. Here we have discovered, idealized, and derived the ultimate limit of such rectification ratios, which are partially validated by numerical simulations, experiments, and micro-scale Hamiltonian-oscillator analyses. For rectifiers whose thermal conductivities (κ) are linear with the temperature, this limit is simply a numerical value of 3. For those whose conductivities are nonlinear with temperatures, the maxima equal κmax/κmin, where two extremes denote values of the solid segment materials that can be possibly found or fabricated within a reasonable temperature range. Recommendations for manufacturing high-ratio rectifiers are also given with examples. Under idealized assumptions, these proposed rectification limits cannot be defied by any bi-segment thermal rectifiers.

  12. Maximal rectification ratios for idealized bi-segment thermal rectifiers

    PubMed Central

    Shih, Tien-Mo; Gao, Zhaojing; Guo, Ziquan; Merlitz, Holger; Pagni, Patrick J.; Chen, Zhong

    2015-01-01

    Thermal rectifiers whose forward heat fluxes are greater than reverse counterparts have been extensively studied. Here we have discovered, idealized, and derived the ultimate limit of such rectification ratios, which are partially validated by numerical simulations, experiments, and micro-scale Hamiltonian-oscillator analyses. For rectifiers whose thermal conductivities (κ) are linear with the temperature, this limit is simply a numerical value of 3. For those whose conductivities are nonlinear with temperatures, the maxima equal κmax/κmin, where two extremes denote values of the solid segment materials that can be possibly found or fabricated within a reasonable temperature range. Recommendations for manufacturing high-ratio rectifiers are also given with examples. Under idealized assumptions, these proposed rectification limits cannot be defied by any bi-segment thermal rectifiers. PMID:26238970

  13. Use of an amorphous silicon electronic portal imaging device for multileaf collimator quality control and calibration.

    PubMed

    Baker, S J K; Budgell, G J; MacKay, R I

    2005-04-01

    Multileaf collimator (MLC) calibration and quality control is a time-consuming procedure typically involving the processing, scanning and analysis of films to measure leaf and collimator positions. Faster and more reliable calibration procedures are required for these tasks, especially with the introduction of intensity modulated radiotherapy which requires more frequent checking and finer positional leaf tolerances than previously. A routine quality control (QC) technique to measure MLC leaf bank gain and offset, as well as minor offsets (individual leaf position relative to a reference leaf), using an amorphous silicon electronic portal imaging device (EPID) has been developed. The technique also tests the calibration of the primary and back-up collimators. A detailed comparison between film and EPID measurements has been performed for six linear accelerators (linacs) equipped with MLC and amorphous silicon EPIDs. Measurements of field size from 4 to 24 cm with the EPID were systematically smaller than film measurements over all field sizes by 0.4 mm for leaves/back-up collimators and by 0.2 mm for conventional collimators. This effect is due to the gain calibration correction applied by the EPID, resulting in a 'flattening' of primary beam profiles. Linac dependent systematic differences of up to 0.5 mm in individual leaf/collimator positions were also found between EPID and film measurements due to the difference between the mechanical and radiation axes of rotation. When corrections for these systematic differences were applied, the residual random differences between EPID and film were 0.23 mm and 0.26 mm (1 standard deviation) for field size and individual leaf/back-up collimator position, respectively. Measured gains (over a distance of 220 mm) always agreed within 0.4 mm with a standard deviation of 0.17 mm. Minor offset measurements gave a mean agreement between EPID and film of 0.01+/-0.10 mm (1 standard deviation) after correction for the tilt of the

  14. Wireless power transmission for biomedical implants: The role of near-zero threshold CMOS rectifiers.

    PubMed

    Mohammadi, Ali; Redoute, Jean-Michel; Yuce, Mehmet R

    2015-01-01

    Biomedical implants require an electronic power conditioning circuitry to provide a stable electrical power supply. The efficiency of wireless power transmission is strongly dependent on the power conditioning circuitry specifically the rectifier. A cross-connected CMOS bridge rectifier is implemented to demonstrate the impact of thresholds of rectifiers on wireless power transfer. The performance of the proposed rectifier is experimentally compared with a conventional Schottky diode full wave rectifier over 9 cm distance of air and tissue medium between the transmitter and receiver. The output voltage generated by the CMOS rectifier across a 1 KΩ resistive load is around twice as much as the Schottky rectifier. PMID:26737525

  15. PLGA-Mesoporous Silicon Microspheres for the in Vivo Controlled Temporospatial Delivery of Proteins.

    PubMed

    Minardi, Silvia; Pandolfi, Laura; Taraballi, Francesca; De Rosa, Enrica; Yazdi, Iman K; Liu, Xeuwu; Ferrari, Mauro; Tasciotti, Ennio

    2015-08-01

    In regenerative medicine, the temporospatially controlled delivery of growth factors (GFs) is crucial to trigger the desired healing mechanisms in the target tissues. The uncontrolled release of GFs has been demonstrated to cause severe side effects in the surrounding tissues. The aim of this study was to optimize a translational approach for the fine temporal and spatial control over the release of proteins, in vivo. Hence, we proposed a newly developed multiscale composite microsphere based on a core consisting of the nanostructured silicon multistage vector (MSV) and a poly(dl-lactide-co-glycolide) acid (PLGA) outer shell. Both of the two components of the resulting composite microspheres (PLGA-MSV) can be independently tailored to achieve multiple release kinetics contributing to the control of the release profile of a reporter protein in vitro. The influence of MSV shape (hemispherical or discoidal) and size (1, 3, or 7 μm) on PLGA-MSV's morphology and size distribution was investigated. Second, the copolymer ratio of the PLGA used to fabricate the outer shell of PLGA-MSV was varied. The composites were fully characterized by optical microscopy, scanning electron microscopy, ζ potential, Fourier transform infrared spectroscopy, and thermogravimetric analysis-differential scanning calorimetry, and their release kinetics over 30 days. PLGA-MSV's biocompatibility was assessed in vitro with J774 macrophages. Finally, the formulation of PLGA-MSV was selected, which concurrently provided the most consistent microsphere size and allowed for a zero-order release kinetic. The selected PLGA-MSVs were injected in a subcutaneous model in mice, and the in vivo release of the reporter protein was followed over 2 weeks by intravital microscopy, to assess if the zero-order release was preserved. PLGA-MSV was able to retain the payload over 2 weeks, avoiding the initial burst release typical of most drug delivery systems. Finally, histological evaluation assessed the

  16. Rigidity of silicone substrates controls cell spreading and stem cell differentiation

    PubMed Central

    Vertelov, Grigory; Gutierrez, Edgar; Lee, Sin-Ae; Ronan, Edward; Groisman, Alex; Tkachenko, Eugene

    2016-01-01

    The dependences of spreading and differentiation of stem cells plated on hydrogel and silicone gel substrates on the rigidity and porosity of the substrates have recently been a subject of some controversy. In experiments on human mesenchymal stem cells plated on soft, medium rigidity, and hard silicone gels we show that harder gels are more osteogenic, softer gels are more adipogenic, and cell spreading areas increase with the silicone gel substrate rigidity. The results of our study indicate that substrate rigidity induces some universal cellular responses independently of the porosity or topography of the substrate. PMID:27651230

  17. Rigidity of silicone substrates controls cell spreading and stem cell differentiation.

    PubMed

    Vertelov, Grigory; Gutierrez, Edgar; Lee, Sin-Ae; Ronan, Edward; Groisman, Alex; Tkachenko, Eugene

    2016-01-01

    The dependences of spreading and differentiation of stem cells plated on hydrogel and silicone gel substrates on the rigidity and porosity of the substrates have recently been a subject of some controversy. In experiments on human mesenchymal stem cells plated on soft, medium rigidity, and hard silicone gels we show that harder gels are more osteogenic, softer gels are more adipogenic, and cell spreading areas increase with the silicone gel substrate rigidity. The results of our study indicate that substrate rigidity induces some universal cellular responses independently of the porosity or topography of the substrate. PMID:27651230

  18. Rigidity of silicone substrates controls cell spreading and stem cell differentiation

    NASA Astrophysics Data System (ADS)

    Vertelov, Grigory; Gutierrez, Edgar; Lee, Sin-Ae; Ronan, Edward; Groisman, Alex; Tkachenko, Eugene

    2016-09-01

    The dependences of spreading and differentiation of stem cells plated on hydrogel and silicone gel substrates on the rigidity and porosity of the substrates have recently been a subject of some controversy. In experiments on human mesenchymal stem cells plated on soft, medium rigidity, and hard silicone gels we show that harder gels are more osteogenic, softer gels are more adipogenic, and cell spreading areas increase with the silicone gel substrate rigidity. The results of our study indicate that substrate rigidity induces some universal cellular responses independently of the porosity or topography of the substrate.

  19. Erbium-doped slot waveguides containing size-controlled silicon nanocrystals

    SciTech Connect

    Hoffmann, R.; Beyer, J. Heitmann, J.; Klemm, V.; Rafaja, D.; Johnson, B. C.; McCallum, J. C.

    2015-04-28

    Silicon based slot waveguides with a slot containing Si nanocrystals (Si-nc) and Erbium ions (Er{sup 3+}) inside a silica matrix were prepared using sputter deposition and low-energy ion implantation. This sequence enabled independent optimization of nanocrystal formation and Er{sup 3+} incorporation parameters. Using a superlattice approach, the size of the Si-nc inside the slot could be controlled and optimized for maximum Er{sup 3+} luminescence yield at 1.54 μm. Er{sup 3+} is found to be efficiently pumped by Si-nc of sizes around 3 to 4 nm. Increasing Er{sup 3+} photoluminescence at 1.54 μm with increasing post-implantation annealing temperatures up to 1000 °C is attributed to annealing of matrix or Si-nc interface defects mainly. Additionally, a dependence of the Er{sup 3+} luminescence intensity on both the excitation and emission linear polarization orientation is shown, which demonstrates efficient field enhancement in sputtered slot waveguide structures.

  20. Stable atom-scale junctions on silicon fabricated by kinetically controlled electrochemical deposition and dissolution.

    PubMed

    Shi, Ping; Bohn, Paul W

    2008-08-01

    Metallic atom-scale junctions (ASJs) constitute the natural limit of nanowires, in which the limiting region of conduction is only a few atoms wide. They are of interest because they exhibit ballistic conduction and their conductance is extraordinarily sensitive to molecular adsorption. However, identifying robust and regenerable mechanisms for their production is a challenge. Gold ASJs have been fabricated electrochemically on silicon using an iodide-containing medium to control the kinetics. Extremely slow electrodeposition or electrodissolution rates were achieved and used to reliably produce ASJs with limiting conductance <5 G(0). Starting from a photolithographically fabricated, Si(3)N(4)-protected micrometer-scale Au bridge between two contact electrodes, a nanometer-scale gap was prepared by focused ion beam milling. The opposing Au faces of this construct were then used in an open-circuit working electrode configuration to produce Au ASJs, either directly or by first overgrowing a thicker Au nanowire and electrothinning it back to an ASJ. Gold ASJs produced by either approach exhibit good stabilityin some cases being stable over hours at 300 Kand quantized conductance properties. The influence of deposition/dissolution potential and supporting electrolyte on the stability of ASJs are considered. PMID:19206360

  1. Improving IMRT quality control efficiency using an amorphous silicon electronic portal imager

    SciTech Connect

    Budgell, G.J.; Zhang, Q.; Trouncer, R.J.; Mackay, R.I.

    2005-11-15

    An amorphous silicon electronic portal imaging device (EPID) has been investigated to determine its usefulness and efficiency for performing linear accelerator quality control checks specific to step and shoot intensity modulated radiation therapy (IMRT). Several dosimetric parameters were measured using the EPID: dose linearity and segment to segment reproducibility of low dose segments, and delivery accuracy of fractions of monitor units. Results were compared to ion chamber measurements. Low dose beam flatness and symmetry were tested by overlaying low dose beam profiles onto the profile from a stable high-dose exposure and visually checking for differences. Beam flatness and symmetry were also calculated and plotted against dose. Start-up reproducibility was tested by overlaying profiles from twenty successive two monitor unit segments. A method for checking the MLC leaf calibration was also tested, designed to be used on a daily or weekly basis, which consisted of summing the images from a series of matched fields. Daily images were co-registered with, then subtracted from, a reference image. A threshold image showing dose differences corresponding to >0.5 mm positional errors was generated and the number of pixels with such dose differences used as numerical parameter to which a tolerance can be applied. The EPID was found to be a sensitive relative dosemeter, able to resolve dose differences of 0.01 cGy. However, at low absolute doses a reproducible dosimetric nonlinearity of up to 7% due to image lag/ghosting effects was measured. It was concluded that although the EPID is suitable to measure segment to segment reproducibility and fractional monitor unit delivery accuracy, it is still less useful than an ion chamber as a tool for dosimetric checks. The symmetry/flatness test proved to be an efficient method of checking low dose profiles, much faster than any of the alternative methods. The MLC test was found to be extremely sensitive to sudden changes in

  2. Method of purifying metallurgical grade silicon employing reduced pressure atmospheric control

    NASA Technical Reports Server (NTRS)

    Ingle, W. M.; Thompson, S. W.; Chaney, R. E. (Inventor)

    1979-01-01

    A method in which a quartz tube is charged with chunks of metallurgical grade silicon and/or a mixture of such chunks and high purity quartz sand, and impurities from a class including aluminum, boron, as well as certain transition metals including nickel, iron, and manganese is described. The tube is then evacuated and heated to a temperature within a range of 800 C to 1400 C. A stream of gas comprising a reactant, such as silicon tetrafluoride, is continuously delivered at low pressures through the charge for causing a metathetical reaction of impurities of the silicon and the reactant to occur for forming a volatile halide and leaving a residue of silicon of an improved purity. The reactant which included carbon monoxide gas and impurities such as iron and nickel react to form volatile carbonyls.

  3. Photoresponse enhancement in graphene/silicon infrared detector by controlling photocarrier collection

    NASA Astrophysics Data System (ADS)

    Tang, Xin; Zhang, Hengkai; Tang, Xiaobing; Lai, King W. C.

    2016-07-01

    Graphene/silicon junction based photodetectors have attracted great interest due to their superior characteristics like large photosensitive area, fast photocarrier collection and low dark current. Currently, the weak optical absorption and short photocarrier lifetime of graphene remain major limitations for detection of infrared light with wavelengths above 1.2 μm. Here, we elucidate the mechanism of photocarrier transport in graphene/silicon junction based photodetector and propose a theoretical model to study the design and effect of finger-electrode structures on the photocurrent in graphene. We demonstrate that the top finger-like electrode in graphene/silicon photodetector can be designed to enhance the photocarrier collection efficiency in graphene by reducing the average transport distance of photocarriers. Therefore, the photoresponsivity of the graphene/silicon junction based photodetector can be increased. Our results have successfully demonstrated that by optimizing the design of finger electrodes, 4 times enhancement of photocurrents in graphene can be obtained at room temperature.

  4. Stable cycling of double-walled silicon nanotube battery anodes through solid-electrolyte interphase control

    NASA Astrophysics Data System (ADS)

    Wu, Hui; Chan, Gerentt; Choi, Jang Wook; Ryu, Ill; Yao, Yan; McDowell, Matthew T.; Lee, Seok Woo; Jackson, Ariel; Yang, Yuan; Hu, Liangbing; Cui, Yi

    2012-05-01

    Although the performance of lithium ion-batteries continues to improve, their energy density and cycle life remain insufficient for applications in consumer electronics, transport and large-scale renewable energy storage. Silicon has a large charge storage capacity and this makes it an attractive anode material, but pulverization during cycling and an unstable solid-electrolyte interphase has limited the cycle life of silicon anodes to hundreds of cycles. Here, we show that anodes consisting of an active silicon nanotube surrounded by an ion-permeable silicon oxide shell can cycle over 6,000 times in half cells while retaining more than 85% of their initial capacity. The outer surface of the silicon nanotube is prevented from expansion by the oxide shell, and the expanding inner surface is not exposed to the electrolyte, resulting in a stable solid-electrolyte interphase. Batteries containing these double-walled silicon nanotube anodes exhibit charge capacities approximately eight times larger than conventional carbon anodes and charging rates of up to 20C (a rate of 1C corresponds to complete charge or discharge in one hour).

  5. Brownian Motion Rectifier: Continuous Sorting of Macromolecules in a Microfabricated Sieve

    NASA Astrophysics Data System (ADS)

    Chou, C. F.; Duke, T. A. J.; Chan, S. S.; Bakajin, O. B.; Austin, R. H.; Cox, E. C.

    1998-03-01

    A new method for separating biological macromolecules according to size has been proposed by Duke and Austin (T.A.J. Duke and R.H. Austin, preprint (1997).). A fine stream of molecules is transported through a microfabricated sieve, etched from a silicon chip by photolithography. The sieve consists of a periodic array of oblong obstacles, oriented at an angle to the direction of flow. The spatial asymmetry and the broken time-reversal symmetry (imposed by the flow) cause the Brownian motion of the molecules to be rectified. Since the effect depends on the thermal motion, molecules with different diffusion coefficients are deflected by different amounts, and consequently a mixture of molecules is sorted according to size. Our preliminary results in sorting a mixture of DNA in such a sieve will be presented.

  6. Beds of reconfigurable angled hairs rectify Stokes flows

    NASA Astrophysics Data System (ADS)

    Alvarado, Jose; Comtet, Jean; Hosoi, Anette Peko

    2015-11-01

    Biological tissues such as intestines, blood vessels, kidneys, and tongues are coated with beds of passive, elongated, hair-like protrusions such as microvilli, hyaluronans, primary cilia, and papillae. Stresses from fluid flows can bend deformable hairs, but this reconfiguration can in turn affect confined fluid flows. We investigate this elastoviscous coupling by developing a biomimetic model system of elastomer hair beds subject to shear-driven Stokes flows in a Taylor-Couette geometry. We characterize this system with a theoretical model which shows that reconfiguration of hair beds is controlled by a single elastoviscous number. Hair bending results in an apparent shear thinning because the hair tip lowers toward the base and thus widens the gap through which fluid flows. When hairs are cantilevered at an angle subnormal to the surface, flow against the grain bends hairs away from the base and thus narrows the gap. Beds of reconfigurable angled hairs can thus give rise to an asymmetric flow impedance at arbitrarily low Reynolds number and could therefore function as a microfluidic rectifier.

  7. Process for the controlled growth of single-crystal films of silicon carbide polytypes on silicon carbide wafers

    NASA Astrophysics Data System (ADS)

    Larkin, David J.; Powell, J. Anthony

    1992-11-01

    A method for the controlled growth of single-crystal semiconductor-device-quality films of SiC polytypes on vicinal (0001) SiC wafers with low tilt angles is presented. Both homoepitaxial and heteroepitaxial SiC films can be produced on the same wafer. In particular, 3C-SiC and 6H-SiC films can be produced within selected areas of the same 6H-SiC wafer.

  8. Process for the controlled growth of single-crystal films of silicon carbide polytypes on silicon carbide wafers

    NASA Astrophysics Data System (ADS)

    Larkin, David J.; Powell, J. Anthony

    1994-11-01

    This invention is a method for the controlled growth of single-crystal semiconductor-device-quality films of SiC polytypes of vicinal (0001) SiC wafers with low tilt angles. Both homoepitaxial and heteroepitaxial SiC films can be produced on the same wafer. In particular, 3C-SiC and 6H-SiC films can be produced within selected areas of the same 6H-SiC wafer.

  9. Process for the controlled growth of single-crystal films of silicon carbide polytypes on silicon carbide wafers

    NASA Astrophysics Data System (ADS)

    Powell, J. Anthony

    1991-06-01

    This invention is a method for the controlled growth of single-crystal semiconductor device quality films of SiC polytypes on vicinal (0001) SiC wafers with low tilt angles. Both homoepitaxial and heteroepitaxial SiC films can be produced on the same wafer. In particular, 3C-SiC and 6H-SiC films can be produced within selected areas of the same 6H-SiC wafer.

  10. Process for the controlled growth of single-crystal films of silicon carbide polytypes on silicon carbide wafers

    NASA Technical Reports Server (NTRS)

    Powell, J. Anthony (Inventor)

    1991-01-01

    This invention is a method for the controlled growth of single-crystal semiconductor device quality films of SiC polytypes on vicinal (0001) SiC wafers with low tilt angles. Both homoepitaxial and heteroepitaxial SiC films can be produced on the same wafer. In particular, 3C-SiC and 6H-SiC films can be produced within selected areas of the same 6H-SiC wafer.

  11. Process for the controlled growth of single-crystal films of silicon carbide polytypes on silicon carbide wafers

    NASA Technical Reports Server (NTRS)

    Larkin, David J. (Inventor); Powell, J. Anthony (Inventor)

    1992-01-01

    A method for the controlled growth of single-crystal semiconductor-device-quality films of SiC polytypes on vicinal (0001) SiC wafers with low tilt angles is presented. Both homoepitaxial and heteroepitaxial SiC films can be produced on the same wafer. In particular, 3C-SiC and 6H-SiC films can be produced within selected areas of the same 6H-SiC wafer.

  12. An ultra-low-voltage rectifier for PE energy harvesting applications

    NASA Astrophysics Data System (ADS)

    Jingmin, Wang; Zheng, Yang; Zhangming, Zhu; Yintang, Yang

    2016-02-01

    An ultra low voltage rectifier with high power conversion efficiency (PCE) for PE energy harvesting applications is presented in this paper. This is achieved by utilizing the DTMOS which the body terminal is connected to the gate terminal in a diode connected transistor. This implementation facilitates the rectifier with dynamic control over the threshold voltage. Moreover, we use input powered to take the place of output powered to reduce the power loss and thereby increasing the power conversion efficiency. Based on standard SMIC 0.18 μm CMOS technology, the simulation results show that the voltage conversion efficiency and the power conversion efficiency can reach up to 90.5% and 95.5% respectively, when the input voltage equals to 0.2 V @ 100 Hz with load resistance 50 kω. Input voltages with frequencies in the range of 10 Hz-1 kHz can be rectified. Project supported by the National Natural Science Foundation of China (Nos. 61234002, 61322405, 61306044, 61376033) and the National High-Tech Program of China (No. 2013AA014103).

  13. Size Control of Porous Silicon-Based Nanoparticles via Pore-Wall Thinning.

    PubMed

    Secret, Emilie; Leonard, Camille; Kelly, Stefan J; Uhl, Amanda; Cozzan, Clayton; Andrew, Jennifer S

    2016-02-01

    Photoluminescent silicon nanocrystals are very attractive for biomedical and electronic applications. Here a new process is presented to synthesize photoluminescent silicon nanocrystals with diameters smaller than 6 nm from a porous silicon template. These nanoparticles are formed using a pore-wall thinning approach, where the as-etched porous silicon layer is partially oxidized to silica, which is dissolved by a hydrofluoric acid solution, decreasing the pore-wall thickness. This decrease in pore-wall thickness leads to a corresponding decrease in the size of the nanocrystals that make up the pore walls, resulting in the formation of smaller nanoparticles during sonication of the porous silicon. Particle diameters were measured using dynamic light scattering, and these values were compared with the nanocrystallite size within the pore wall as determined from X-ray diffraction. Additionally, an increase in the quantum confinement effect is observed for these particles through an increase in the photoluminescence intensity of the nanoparticles compared with the as-etched nanoparticles, without the need for a further activation step by oxidation after synthesis.

  14. Controlling growth and field emission properties of silicon nanotube arrays by multistep template replication and chemical vapor deposition

    NASA Astrophysics Data System (ADS)

    Mu, Cheng; Yu, Yuxiang; Liao, Wei; Zhao, Xinsheng; Xu, Dongsheng; Chen, Xihong; Yu, Dapeng

    2005-09-01

    A multistep template replication route was employed to fabricate highly ordered silicon nanotube (SiNT) arrays, in which annular nanochannel membranes were produced first, and then silicon was deposited into the annular nanochannels by pyrolytic decomposition of silane. Electron microscopy revealed that these SiNTs are highly crystalline and the wall thicknesses can be controlled by the spaces of the annular nanochannel. Field emission characterization showed that the turn-on field and threshold field for the SiNT arrays are about 5.1V/μm and 7.3V/μm, respectively. These results represent one of the lowest fields ever reported for Si field emission materials at technologically useful current densities.

  15. Ultrafast optical control using the Kerr nonlinearity in hydrogenated amorphous silicon microcylindrical resonators

    PubMed Central

    Vukovic, N.; Healy, N.; Suhailin, F. H.; Mehta, P.; Day, T. D.; Badding, J. V.; Peacock, A. C.

    2013-01-01

    Microresonators are ideal systems for probing nonlinear phenomena at low thresholds due to their small mode volumes and high quality (Q) factors. As such, they have found use both for fundamental studies of light-matter interactions as well as for applications in areas ranging from telecommunications to medicine. In particular, semiconductor-based resonators with large Kerr nonlinearities have great potential for high speed, low power all-optical processing. Here we present experiments to characterize the size of the Kerr induced resonance wavelength shifting in a hydrogenated amorphous silicon resonator and demonstrate its potential for ultrafast all-optical modulation and switching. Large wavelength shifts are observed for low pump powers due to the high nonlinearity of the amorphous silicon material and the strong mode confinement in the microcylindrical resonator. The threshold energy for switching is less than a picojoule, representing a significant step towards advantageous low power silicon-based photonic technologies. PMID:24097126

  16. Electrical Control of g-Factor in a Few-Hole Silicon Nanowire MOSFET.

    PubMed

    Voisin, B; Maurand, R; Barraud, S; Vinet, M; Jehl, X; Sanquer, M; Renard, J; De Franceschi, S

    2016-01-13

    Hole spins in silicon represent a promising yet barely explored direction for solid-state quantum computation, possibly combining long spin coherence, resulting from a reduced hyperfine interaction, and fast electrically driven qubit manipulation. Here we show that a silicon-nanowire field-effect transistor based on state-of-the-art silicon-on-insulator technology can be operated as a few-hole quantum dot. A detailed magnetotransport study of the first accessible hole reveals a g-factor with unexpectedly strong anisotropy and gate dependence. We infer that these two characteristics could enable an electrically driven g-tensor-modulation spin resonance with Rabi frequencies exceeding several hundred mega-Hertz. PMID:26599868

  17. Optically-controlled extinction ratio and Q-factor tunable silicon microring resonators based on optical forces

    NASA Astrophysics Data System (ADS)

    Long, Yun; Wang, Jian

    2014-06-01

    Tunability is a desirable property of microring resonators to facilitate superior performance. Using light to control light, we present an alternative simple approach to tuning the extinction ratio (ER) and Q-factor of silicon microring resonators based on optical forces. We design an opto-mechanical tunable silicon microring resonator consisting of an add-drop microring resonator and a control-light-carrying waveguide (``controlling'' waveguide). One of the two bus waveguides of the microring resonator is a deformable nanostring put in parallel with the ``controlling'' waveguide. The tuning mechanism relies on the optical force induced deflection of suspended nanostring, leading to the change of coupling coefficient of microring and resultant tuning of ER and Q-factor. Two possible geometries, i.e. double-clamped nanostring and cantilever nanostring, are studied in detail for comparison. The obtained results imply a favorable structure with the microring positioned at the end of the cantilever nanostring. It features a wide tuning range of ER from 5.6 to 39.9 dB and Q-factor from 309 to 639 as changing the control power from 0 to 1.4 mW.

  18. Enhanced rectifying response from metal-insulator-insulator-metal junctions

    NASA Astrophysics Data System (ADS)

    Maraghechi, P.; Foroughi-Abari, A.; Cadien, K.; Elezzabi, A. Y.

    2011-12-01

    We present on a metal-insulator-insulator-metal quantum electronic tunneling devices suitable for high speed rectifiers. Through the introduction of double oxide layer between similar metallic electrodes, a cascaded potential barrier is formed which alters the electron tunneling mechanism at forward versus the reverse bias. The cascaded potential barrier engineering manifests itself in both a highly nonlinear and asymmetric I-V junction characteristic. It is envisioned that high speed rectifiers and mixers having extraordinary nonlinearity can be realized through the incorporation of the cascaded potential barrier architecture and dissimilar metallic electrodes.

  19. A 17 GHz molecular rectifier

    PubMed Central

    Trasobares, J.; Vuillaume, D.; Théron, D.; Clément, N.

    2016-01-01

    Molecular electronics originally proposed that small molecules sandwiched between electrodes would accomplish electronic functions and enable ultimate scaling to be reached. However, so far, functional molecular devices have only been demonstrated at low frequency. Here, we demonstrate molecular diodes operating up to 17.8 GHz. Direct current and radio frequency (RF) properties were simultaneously measured on a large array of molecular junctions composed of gold nanocrystal electrodes, ferrocenyl undecanethiol molecules and the tip of an interferometric scanning microwave microscope. The present nanometre-scale molecular diodes offer a current density increase by several orders of magnitude compared with that of micrometre-scale molecular diodes, allowing RF operation. The measured S11 parameters show a diode rectification ratio of 12 dB which is linked to the rectification behaviour of the direct current conductance. From the RF measurements, we extrapolate a cut-off frequency of 520 GHz. A comparison with the silicon RF-Schottky diodes, architecture suggests that the RF-molecular diodes are extremely attractive for scaling and high-frequency operation. PMID:27694833

  20. 46 CFR 183.360 - Semiconductor rectifier systems.

    Code of Federal Regulations, 2010 CFR

    2010-10-01

    ...) Meet Sections 35.84.2 and 35.84.4 of the ABS Steel Vessel Rules (incorporated by reference; see 46 CFR... 46 Shipping 7 2010-10-01 2010-10-01 false Semiconductor rectifier systems. 183.360 Section 183.360... TONS) ELECTRICAL INSTALLATION Power Sources and Distribution Systems § 183.360 Semiconductor...

  1. 35 GHz integrated circuit rectifying antenna with 33 percent efficiency

    NASA Technical Reports Server (NTRS)

    Yoo, T.-W.; Chang, K.

    1991-01-01

    A 35 GHz integrated circuit rectifying antenna (rectenna) has been developed using a microstrip dipole antenna and beam-lead mixer diode. Greater than 33 percent conversion efficiency has been achieved. The circuit should have applications in microwave/millimeter-wave power transmission and detection.

  2. 125. JOB NO. LINE 5044, INTERNATIONAL RECTIFIER CORP., RACHELLE LABORATORIES, ...

    Library of Congress Historic Buildings Survey, Historic Engineering Record, Historic Landscapes Survey

    125. JOB NO. LINE 5044, INTERNATIONAL RECTIFIER CORP., RACHELLE LABORATORIES, INC., LONG BEACH, CA, BY J.C. FULTON, SEPTEMBER 1982, LINE 5044, CLIFTON AND CO., ON FILE ENGINEERS DEPARTMENT, PORT OF LONG BEACH - Ford Motor Company Long Beach Assembly Plant, Assembly Building, 700 Henry Ford Avenue, Long Beach, Los Angeles County, CA

  3. 37. VIEW OF SIX GAP ROTARY RECTIFIER FOR MAINTAINING CORONA ...

    Library of Congress Historic Buildings Survey, Historic Engineering Record, Historic Landscapes Survey

    37. VIEW OF SIX GAP ROTARY RECTIFIER FOR MAINTAINING CORONA DISCHARGE IN THE COTTRELL ELECTROSTATIC GENERATORS. THE SYSTEM WAS CAPABLE OF PROVIDING 88,000 VOLTS TO THE ELECTRODES WITHIN THE PRECIPITATOR CHAMBER THE UNIT WAS LOCATED TO THE REAR OF BOILER 904 IN AN ENCLOSED ROOM. - New York, New Haven & Hartford Railroad, Cos Cob Power Plant, Sound Shore Drive, Greenwich, Fairfield County, CT

  4. Electronic transport properties of silicon clusters

    NASA Astrophysics Data System (ADS)

    Matsuura, Yukihito

    2016-02-01

    The electronic transport properties of silicon clusters were examined via theoretical calculations using the first-principles method. Additionally, p-type doping and n-type doping were analyzed by calculating conductance and current of boron- and phosphorus-doped silicon clusters. The p-type doping and n-type doping provided a new transmission peak at an energy level around the Fermi level to increase conductance. Furthermore, simultaneous boron and phosphorus doping resulted in noticeable rectifying characteristics, with the current drive in forward bias being three times higher than that in the reverse bias. A p-n junction was achieved even on a molecular scale.

  5. A novel method for gas flow and impurity control in directional solidification of multi-crystalline silicon

    NASA Astrophysics Data System (ADS)

    Bellmann, M. P.; Lindholm, D.; M'Hamdi, M.

    2014-08-01

    In this paper the potential of a specially designed argon gas injector for controlling the gas flow and transport of impurities in directional solidification of multi-crystalline silicon is evaluated. The gas injector which consists of a valve allows one to control the flow direction independently in the vertical and horizontal directions. Based on a gas flow model derived from a semi-industrial crystallization furnace the impact of different gas injection combinations on the gas flow pattern and impurity transport is studied. Special focus is given to the SiO evacuation from the melt-free surface, the CO formation at graphite surfaces and the CO evacuation from the furnace interior. It is found that for gas flow pattern formed through horizontal rather than vertical gas injection, SiO and CO are evacuated most effectively from the furnace interior and the formation of CO is inhibited. Such a type of gas injector presents a versatile tool for controlling the flow and impurity transport in the gas phase and possibly improving the material properties of crystalline silicon.

  6. Silicone metalization

    DOEpatents

    Maghribi, Mariam N.; Krulevitch, Peter; Hamilton, Julie

    2008-12-09

    A system for providing metal features on silicone comprising providing a silicone layer on a matrix and providing a metal layer on the silicone layer. An electronic apparatus can be produced by the system. The electronic apparatus comprises a silicone body and metal features on the silicone body that provide an electronic device.

  7. Silicone metalization

    DOEpatents

    Maghribi, Mariam N.; Krulevitch, Peter; Hamilton, Julie

    2006-12-05

    A system for providing metal features on silicone comprising providing a silicone layer on a matrix and providing a metal layer on the silicone layer. An electronic apparatus can be produced by the system. The electronic apparatus comprises a silicone body and metal features on the silicone body that provide an electronic device.

  8. Controlled release of theophylline from poly(vinyl alcohol) hydrogels/porous silicon nanostructured systems

    NASA Astrophysics Data System (ADS)

    Cervantes-Rincón, N.; Medellín-Rodríguez, F. J.; Escobar-Barrios, V. A.; Palestino, G.

    2013-03-01

    In this research, hybrid hydrogels of poly (vinyl alcohol)/ porous silicon (PSi)/theophylline were synthesized by the freezing and thawing method. We evaluated the influence of the synthesis parameters of the poly (vinyl alcohol) (PVA) hydrogels in relation to their ability to swell and drug released. The parameters studied (using an experimental design developed in Minitab 16) were the polymer concentration, the freezing temperature and the number of freezing/thawing (f/t) cycles. Nanostructured porous silicon particles (NsPSi) and theophylline were added within the polymer matrix to increase the drug charge and the polymer mechanical strength. The hybrid hydrogels were characterized by Infrared Spectroscopy Fourier Transform (FTIR), Scanning Electron Microscopy (SEM), Transmission Electron Microscopy (TEM) and Differential Scanning Calorimetry (DSC), drug delivery kinetics were engineered according to the desired drug release schedule.

  9. Dopant profile control of epitaxial emitter for silicon solar cells by low temperature epitaxy

    NASA Astrophysics Data System (ADS)

    Lai, Donny; Tan, Yew Heng; Gunawan, Oki; He, Lining; Seng Tan, Chuan

    2011-07-01

    We report an alternative approach to grow phosphorus-doped epitaxial silicon emitter by rapid thermal chemical vapor deposition at low temperature (T ≥ 700 °C). A power conversion efficiency (PCE) of (6.6 ± 0.3)% and a pseudo PCE of (10.2 ± 0.2)% has been achieved for the solar cell with epi-emitter grown at 700 °C, in the absence of surface texturization, antireflective coating, and back surface field enhancement, without considering front contact shading. Secondary ion mass spectroscopy revealed that lower temperature silicon epitaxy yields a more abrupt p-n junction, suggesting potential applications for radial p-n junction wire array solar cells.

  10. Process for fabricating device structures for real-time process control of silicon doping

    DOEpatents

    Weiner, Kurt H.

    2001-01-01

    Silicon device structures designed to allow measurement of important doping process parameters immediately after the doping step has occurred. The test structures are processed through contact formation using standard semiconductor fabrication techniques. After the contacts have been formed, the structures are covered by an oxide layer and an aluminum layer. The aluminum layer is then patterned to expose the contact pads and selected regions of the silicon to be doped. Doping is then performed, and the whole structure is annealed with a pulsed excimer laser. But laser annealing, unlike standard annealing techniques, does not effect the aluminum contacts because the laser light is reflected by the aluminum. Once the annealing process is complete, the structures can be probed, using standard techniques, to ascertain data about the doping step. Analysis of the data can be used to determine probable yield reductions due to improper execution of the doping step and thus provide real-time feedback during integrated circuit fabrication.

  11. Donor ionization in size controlled silicon nanocrystals: The transition from defect passivation to free electron generation

    NASA Astrophysics Data System (ADS)

    Crowe, I. F.; Papachristodoulou, N.; Halsall, M. P.; Hylton, N. P.; Hulko, O.; Knights, A. P.; Yang, P.; Gwilliam, R. M.; Shah, M.; Kenyon, A. J.

    2013-01-01

    We studied the photoluminescence spectra of silicon and phosphorus co-implanted silica thin films on (100) silicon substrates as a function of isothermal annealing time. The rapid phase segregation, formation, and growth dynamics of intrinsic silicon nanocrystals are observed, in the first 600 s of rapid thermal processing, using dark field mode X-TEM. For short annealing times, when the nanocrystal size distribution exhibits a relatively small mean diameter, formation in the presence of phosphorus yields an increase in the luminescence intensity and a blue shift in the emission peak compared with intrinsic nanocrystals. As the mean size increases with annealing time, this enhancement rapidly diminishes and the peak energy shifts further to the red than the intrinsic nanocrystals. These results indicate the existence of competing pathways for the donor electron, which depends strongly on the nanocrystal size. In samples containing a large density of relatively small nanocrystals, the tendency of phosphorus to accumulate at the nanocrystal-oxide interface means that ionization results in a passivation of dangling bond (Pb-centre) type defects, through a charge compensation mechanism. As the size distribution evolves with isothermal annealing, the density of large nanocrystals increases at the expense of smaller nanocrystals, through an Ostwald ripening mechanism, and the majority of phosphorus atoms occupy substitutional lattice sites within the nanocrystals. As a consequence of the smaller band-gap, ionization of phosphorus donors at these sites increases the free carrier concentration and opens up an efficient, non-radiative de-excitation route for photo-generated electrons via Auger recombination. This effect is exacerbated by an enhanced diffusion in phosphorus doped glasses, which accelerates silicon nanocrystal growth.

  12. Rapid thermal processing of high-efficiency silicon solar cells with controlled in-situ annealing

    SciTech Connect

    Doshi, P.; Rohatgi, A.; Ropp, M.; Chen, Z.; Ruby, D.; Meier, D.L.

    1995-01-01

    Silicon solar cell efficiencies of 17.1%, 16.4%, 14.8%, and 14.9% have been achieved on FZ, Cz, multicrystalline (mc-Si), and dendritic web (DW) silicon, respectively, using simplified, cost-effective rapid thermal processing (RTP). These represent the highest reported efficiencies for solar cells processed with simultaneous front and back diffusion with no conventional high-temperature furnace steps. Appropriate diffusion temperature coupled with the added in-situ anneal resulted in suitable minority-carrier lifetime and diffusion profiles for high-efficiency cells. The cooling rate associated with the in-situ anneal can improve the lifetime and lower the reverse saturation current density (J{sub 0}), however, this effect is material and base resistivity specific. PECVD antireflection (AR) coatings provided low reflectance and efficient front surface and bulk defect passivation. Conventional cells fabricated on FZ silicon by furnace diffusions and oxidations gave an efficiency of 18.8% due to greater short wavelength response and lower J{sub 0}.

  13. Silicon nanocrystals in SiN{sub x}/SiO{sub 2} hetero-superlattices: The loss of size control after thermal annealing

    SciTech Connect

    Zelenina, A. Zacharias, M.; Sarikov, A.; Zhigunov, D. M.; Weiss, C.; Zakharov, N.; Werner, P.; López-Conesa, L.; Peiró, F.

    2014-06-28

    Superlattices containing 3 nm thick silicon rich silicon nitride sublayers and 3 nm and 10 nm thick SiO{sub 2} barriers were prepared by plasma enhanced chemical vapor deposition. Despite the as-prepared samples represented a well-kept multilayer structure with smooth interfaces, the high temperature annealing resulted in the total destruction of multilayer structure in the samples containing 3 nm SiO{sub 2} barriers. Energy-filtered transmission electron microscopy images of these samples indicated a silicon nanoclusters formation with sizes of 2.5–12.5 nm, which were randomly distributed within the structure. Although in the sample with 10 nm SiO{sub 2} barriers some fragments of the multilayer structure could be still observed after thermal annealing, nevertheless, the formation of large nanocrystals with diameters up to 10 nm was confirmed by dark field transmission electron microscopy. Thus, in contrast to the previously published results, the expected size control of silicon nanocrystals was lost. According to the FTIR results, the thermal annealing of SiN{sub x}/SiO{sub 2} superlattices led to the formation of silicon nanocrystals in mostly oxynitride matrix. Annealed samples demonstrated a photoluminescence peak at 885 nm related to the luminescence of silicon nanocrystals, as confirmed by time-resolved photoluminescence measurements. The loss of nanocrystals size control is discussed in terms of the migration of oxygen atoms from the SiO{sub 2} barriers into the silicon rich silicon nitride sublayers. A thermodynamic mechanism responsible for this process is proposed. According to this mechanism, the driving force for the oxygen migration is the gain in the configuration entropy related to the relative arrangements of oxygen and nitrogen atoms.

  14. Plasma monitoring and PECVD process control in thin film silicon-based solar cell manufacturing

    NASA Astrophysics Data System (ADS)

    Gabriel, Onno; Kirner, Simon; Klick, Michael; Stannowski, Bernd; Schlatmann, Rutger

    2014-02-01

    A key process in thin film silicon-based solar cell manufacturing is plasma enhanced chemical vapor deposition (PECVD) of the active layers. The deposition process can be monitored in situ by plasma diagnostics. Three types of complementary diagnostics, namely optical emission spectroscopy, mass spectrometry and non-linear extended electron dynamics are applied to an industrial-type PECVD reactor. We investigated the influence of substrate and chamber wall temperature and chamber history on the PECVD process. The impact of chamber wall conditioning on the solar cell performance is demonstrated.

  15. Wavelength-controlled external-cavity laser with a silicon photonic crystal resonant reflector

    NASA Astrophysics Data System (ADS)

    Gonzalez-Fernandez, A. A.; Liles, Alexandros A.; Persheyev, Saydulla; Debnath, Kapil; O'Faolain, Liam

    2016-03-01

    We report the experimental demonstration of an alternative design of external-cavity hybrid lasers consisting of a III-V Semiconductor Optical Amplifier with fiber reflector and a Photonic Crystal (PhC) based resonant reflector on SOI. The Silicon reflector comprises a polymer (SU8) bus waveguide vertically coupled to a PhC cavity and provides a wavelength-selective optical feedback to the laser cavity. This device exhibits milliwatt-level output power and sidemode suppression ratio of more than 25 dB.

  16. Chemical control over the formation and reactivity of ultra-thin films and amino-terminated layers on silicon

    NASA Astrophysics Data System (ADS)

    Rodriguez-Reyes, Juan Carlos F.

    The physical-chemical properties of several interfacial systems of technological relevance are investigated, having as a common goal the elucidation of strategies towards their atomic- and molecular-level control. Such systems can be classified in three groups: (i) ultra-thin films deposited using metalorganic precursors, (ii) metalorganic monolayers on silicon, and (iii) amine-functionalized silicon surfaces. Experimental, theoretical and chemometric methods are conveniently combined to gain a solid understanding of these systems. The ultra-thin films under investigation are titanium carbonitride (TiNC) and hafnium oxide (HfO2). Since these films may serve as substrates for deposition of other materials in circuit components, their surface chemistry needs to be understood and controlled in order to facilitate further deposition steps. The surface of a TiCN film is transformed to titanium nitride (TiN) through nitridation with ammonia; this compositional change can be reversed by the partial decomposition of ethylene molecules on the surface. The surface reactivity is observed to depend on the film composition, and therefore the method described above serves to reversibly tune the reactivity of Ti-based films. As for HfO2 films, it is found that the deposition temperature affects the degree of crystallinity of the films, which in turn affects their surface chemistry. Thus, together with a control of the composition, it is found that the reactivity of a film can be controlled precisely by controlling the crystallinity. The investigation of metalorganic monolayers on silicon surfaces was motivated by the need for understanding the first steps of metalorganic-based deposition of films, which is usually characterized by a heavy presence of contaminants that degrade the film properties. Through a combination of vibrational (infrared) spectroscopy and theoretical methods, a feasible pathway for the adsorption and decomposition of Ti[N(CH3)2]4 is found. This pathway

  17. SiC MOSFET Based Single Phase Active Boost Rectifier with Power Factor Correction for Wireless Power Transfer Applications

    SciTech Connect

    Onar, Omer C; Tang, Lixin; Chinthavali, Madhu Sudhan; Campbell, Steven L; Miller , John M.

    2014-01-01

    Wireless Power Transfer (WPT) technology is a novel research area in the charging technology that bridges the utility and the automotive industries. There are various solutions that are currently being evaluated by several research teams to find the most efficient way to manage the power flow from the grid to the vehicle energy storage system. There are different control parameters that can be utilized to compensate for the change in the impedance due to variable parameters such as battery state-of-charge, coupling factor, and coil misalignment. This paper presents the implementation of an active front-end rectifier on the grid side for power factor control and voltage boost capability for load power regulation. The proposed SiC MOSFET based single phase active front end rectifier with PFC resulted in >97% efficiency at 137mm air-gap and >95% efficiency at 160mm air-gap.

  18. Covalent and stable CuAAC modification of silicon surfaces for control of cell adhesion.

    PubMed

    Vutti, Surendra; Buch-Månson, Nina; Schoffelen, Sanne; Bovet, Nicolas; Martinez, Karen L; Meldal, Morten

    2015-03-23

    Stable primary functionalization of metal surfaces plays a significant role in reliable secondary attachment of complex functional molecules used for the interfacing of metal objects and nanomaterials with biological systems. In principle, this can be achieved through chemical reactions either in the vapor or liquid phase. In this work, we compared these two methods for oxidized silicon surfaces and thoroughly characterized the functionalization steps by tagging and fluorescence imaging. We demonstrate that the vapor-phase functionalization only provided transient surface modification that was lost on extensive washing. For stable surface modification, a liquid-phase method was developed. In this method, silicon wafers were decorated with azides, either by silanization with (3-azidopropyl)triethoxysilane or by conversion of the amine groups of an aminopropylated surface by means of the azido-transfer reaction. Subsequently, D-amino acid adhesion peptides could be immobilized on the surface by use of Cu(I)-catalyzed click chemistry. This enabled the study of cell adhesion to the metal surface. In contrast to unmodified surfaces, the peptide-modified surfaces were able to maintain cell adhesion during significant flow velocities in a microflow reactor.

  19. Rectifying behaviour of spin coated pn hetero-junction

    SciTech Connect

    Yogamalar, N. Rajeswari; Bose, A. Chandra

    2015-06-24

    Rectifying pn hetero- junction is fabricated with an acceptor p-type organic semiconductor namely tetra- chloro dihydroxy tetra-iodo fluorescein (Rose Bengal (RB)) followed by an inorganic n-type ZnO semiconductor on indium tin oxide (ITO) substrate. The n-type ZnO films are formed by unintentional doping and doping with aluminium (Al) and yttrium (Y) donors. The surface morphology and the distribution of grains are observed from scanning electron microscopy (SEM) and atomic force microscopy (AFM). The current-voltage (I-V) characteristic of the rectifying diode is measured to characterize the junction properties. The I-V plots obtained from the hetero- junction with electric contact shows a diode characteristic different from that of an ideal behavior. The overall efficiency of the diode exhibits a greater dependency on the film crystallinity, carrier concentration, and reverse saturation current.

  20. Development of a Thermal Rectifier Usable at High Temperature

    NASA Astrophysics Data System (ADS)

    Takeuchi, Tsunehiro; Goto, Hiroki; Toyama, Yasuhiro; Itoh, Takashi; Mikami, Masashi

    2011-05-01

    By using Al-based metallic alloys characterized by a disordered structure and a narrow pseudogap of a few hundred meV in energy width persisting at the Fermi level, we succeeded in preparing materials possessing a large increase of thermal conductivity with increasing temperature. This unusual increase of thermal conductivity is caused by the electronic structure effect known as the bipolar diffusion effect (BDE) in the context of the two-band model. A thermal rectifier was constructed using materials exhibiting the BDE. By showing the thermal rectification of the bulk sample prepared in this study, we demonstrate that our newly proposed idea of a thermal rectifier using the BDE is applicable for practical use.

  1. Highly sensitive silicon nanowire biosensor with novel liquid gate control for detection of specific single-stranded DNA molecules.

    PubMed

    Adam, Tijjani; Hashim, U

    2015-05-15

    The study demonstrates the development of a liquid-based gate-control silicon nanowire biosensor for detection of specific single-stranded DNA (ssDNA) molecules. The sensor was fabricated using conventional photolithography coupled with an inductively coupled plasma dry etching process. Prior to the application of DNA to the device, its linear response to pH was confirmed by serial dilution from pH 2 to pH 14. Then, the sensor surface was silanized and directly aminated with (3-aminopropyl) triethoxysilane to create a molecular binding chemistry for biofunctionalization. The resulting Si‒O‒Si‒ components were functionalized with receptor ssDNA, which interacted with the targeted ssDNA to create a field across the silicon nanowire and increase the current. The sensor shows selectivity for the target ssDNA in a linear range from target ssDNA concentrations of 100 pM to 25 nM. With its excellent detection capabilities, this sensor platform is promising for detection of specific biomarkers and other targeted proteins. PMID:25453738

  2. Performance of the Wells self-rectifying air turbine

    NASA Astrophysics Data System (ADS)

    Raghunathan, S.; Tan, C. P.; Ombaka, O. O.

    1985-12-01

    Analytical and experimental studies of the effect of geometric and aerodynamic variables on the performance of the Wells self-rectifying air turbine are presented in this paper. Two approaches to the prediction of the Wells turbine performance are described, both of which are based on the two dimensional cascade theory and isolated aerofoil data. Experimental results are based on the investigations in Unidirectional and oscillating airflow rigs. Comparisons are made on the analytical and experimental results.

  3. Performance prediction of the Wells self-rectifying air turbine

    NASA Astrophysics Data System (ADS)

    Raghunathan, S.; Tan, C. P.

    An experimental and analytical study of the effects of geometric and aerodynamic variables on the performance of the Wells self-rectifying axial flow air turbine is presented. Experiments were performed in a unidirectional flow rig. Two approaches to the prediction of the performance of the Wells turbine were described, both of which were based on two-dimensional cascade theory and isolated aerofoil data. Finally, comparisons of the predicted results with the experimental results were made.

  4. Thermally controlled coupling of a rolled-up microtube integrated with a waveguide on a silicon electronic-photonic integrated circuit.

    PubMed

    Zhong, Qiuhang; Tian, Zhaobing; Veerasubramanian, Venkat; Dastjerdi, M Hadi Tavakoli; Mi, Zetian; Plant, David V

    2014-05-01

    We report on the first experimental demonstration of the thermal control of coupling strength between a rolled-up microtube and a waveguide on a silicon electronic-photonic integrated circuit. The microtubes are fabricated by selectively releasing a coherently strained GaAs/InGaAs heterostructure bilayer. The fabricated microtubes are then integrated with silicon waveguides using an abruptly tapered fiber probe. By tuning the gap between the microtube and the waveguide using localized heaters, the microtube-waveguide evanescent coupling is effectively controlled. With heating, the extinction ratio of a microtube whispering-gallery mode changes over an 18 dB range, while the resonant wavelength remains approximately unchanged. Utilizing this dynamic thermal tuning effect, we realize coupling modulation of the microtube integrated with the silicon waveguide at 2 kHz with a heater voltage swing of 0-6 V.

  5. Kinetics and fracture resistance of lithiated silicon nanostructure pairs controlled by their mechanical interaction

    NASA Astrophysics Data System (ADS)

    Lee, Seok Woo; Lee, Hyun-Wook; Ryu, Ill; Nix, William D.; Gao, Huajian; Cui, Yi

    2015-06-01

    Following an explosion of studies of silicon as a negative electrode for Li-ion batteries, the anomalous volumetric changes and fracture of lithiated single Si particles have attracted significant attention in various fields, including mechanics. However, in real batteries, lithiation occurs simultaneously in clusters of Si in a confined medium. Hence, understanding how the individual Si structures interact during lithiation in a closed space is necessary. Here, we demonstrate physical and mechanical interactions of swelling Si structures during lithiation using well-defined Si nanopillar pairs. Ex situ SEM and in situ TEM studies reveal that compressive stresses change the reaction kinetics so that preferential lithiation occurs at free surfaces when the pillars are mechanically clamped. Such mechanical interactions enhance the fracture resistance of lithiated Si by lessening the tensile stress concentrations in Si structures. This study will contribute to improved design of Si structures at the electrode level for high-performance Li-ion batteries.

  6. Kinetics and fracture resistance of lithiated silicon nanostructure pairs controlled by their mechanical interaction

    SciTech Connect

    Lee, Seok Woo; Lee, Hyun -Wook; Ryu, Ill; Nix, William D.; Gao, Huajian; Cui, Yi

    2015-06-26

    Following an explosion of studies of silicon as a negative electrode for Li-ion batteries, the anomalous volumetric changes and fracture of lithiated single Si particles have attracted significant attention in various fields, including mechanics. However, in real batteries, lithiation occurs simultaneously in clusters of Si in a confined medium. Hence, understanding how the individual Si structures interact during lithiation in a closed space is necessary. Here, we demonstrate physical and mechanical interactions of swelling Si structures during lithiation using well-defined Si nanopillar pairs. Ex situ SEM and in situ TEM studies reveal that compressive stresses change the reaction kinetics so that preferential lithiation occurs at free surfaces when the pillars are mechanically clamped. Such mechanical interactions enhance the fracture resistance of lithiated Si by lessening the tensile stress concentrations in Si structures. Lastly, this study will contribute to improved design of Si structures at the electrode level for high-performance Li-ion batteries.

  7. Characterization of a controlled electroless deposition of copper thin film on germanium and silicon surfaces

    NASA Astrophysics Data System (ADS)

    Scudiero, Louis; Fasasi, Ayuba; Griffiths, Peter R.

    2011-02-01

    Nanofilms of copper were deposited on silicon and, for the first time, on polycrystalline germanium substrates by electroless deposition. Germanium or silicon disks were immersed in a 10 mM copper sulfate solution containing dilute hydrofluoric acid at room temperature. This simple one-step deposition does not require the use of laborious operations or expensive equipment, that the reaction medium be degassed, or that the film be annealed. The copper film grows in a few minutes, producing a film on both Ge and Si that covers a very large area of the substrate in contrast to other metals such as Au, Ag, Pt and Pd for which deposition on Ge and Si produces islands or dendrites. Atomic force microscopy, X-ray photoelectron spectroscopy (XPS) and powder X-ray diffraction (PXRD) were used to characterize the microstructure and confirmed the formation of elemental copper nanofilms. The AFM micrographs reveal a Stranski-Krastanov type of film growth (layers + islands) that varies with the length of time the Ge or Si substrate is immersed in the CuSO4 solution. Thicker films were observed on the Ge than on the Si substrate resulting in larger particles and rougher surface than on Si. XPS analysis shows that the elemental copper is deposited on both Ge and Si substrates and that the films oxidize over a period of weeks with air exposure at room temperature. Finally, PXRD data reveal two preferential orientations (1 1 1) and (2 0 0) for the copper crystallites grown on both Ge and Si. The same intensity of the (1 1 1)-texture was measured on both Ge and Si substrate which is an important result because it has been shown that the (1 1 1) texture reduces stress-induced voiding and increases resistance to electromigration in metal interconnects.

  8. High-stroke silicon-on-insulator MEMS nanopositioner: Control design for non-raster scan atomic force microscopy

    SciTech Connect

    Maroufi, Mohammad Fowler, Anthony G. Bazaei, Ali Moheimani, S. O. Reza

    2015-02-15

    A 2-degree of freedom microelectromechanical systems nanopositioner designed for on-chip atomic force microscopy (AFM) is presented. The device is fabricated using a silicon-on-insulator-based process and is designed as a parallel kinematic mechanism. It contains a central scan table and two sets of electrostatic comb actuators along each orthogonal axis, which provides displacement ranges greater than ±10 μm. The first in-plane resonance modes are located at 1274 Hz and 1286 Hz for the X and Y axes, respectively. To measure lateral displacements of the stage, electrothermal position sensors are incorporated in the design. To facilitate high-speed scans, the highly resonant dynamics of the system are controlled using damping loops in conjunction with internal model controllers that enable accurate tracking of fast sinusoidal set-points. To cancel the effect of sensor drift on controlled displacements, washout controllers are used in the damping loops. The feedback controlled nanopositioner is successfully used to perform several AFM scans in contact mode via a Lissajous scan method with a large scan area of 20 μm × 20 μm. The maximum scan rate demonstrated is 1 kHz.

  9. High-stroke silicon-on-insulator MEMS nanopositioner: control design for non-raster scan atomic force microscopy.

    PubMed

    Maroufi, Mohammad; Fowler, Anthony G; Bazaei, Ali; Moheimani, S O Reza

    2015-02-01

    A 2-degree of freedom microelectromechanical systems nanopositioner designed for on-chip atomic force microscopy (AFM) is presented. The device is fabricated using a silicon-on-insulator-based process and is designed as a parallel kinematic mechanism. It contains a central scan table and two sets of electrostatic comb actuators along each orthogonal axis, which provides displacement ranges greater than ±10 μm. The first in-plane resonance modes are located at 1274 Hz and 1286 Hz for the X and Y axes, respectively. To measure lateral displacements of the stage, electrothermal position sensors are incorporated in the design. To facilitate high-speed scans, the highly resonant dynamics of the system are controlled using damping loops in conjunction with internal model controllers that enable accurate tracking of fast sinusoidal set-points. To cancel the effect of sensor drift on controlled displacements, washout controllers are used in the damping loops. The feedback controlled nanopositioner is successfully used to perform several AFM scans in contact mode via a Lissajous scan method with a large scan area of 20 μm × 20 μm. The maximum scan rate demonstrated is 1 kHz.

  10. Semiconductor-metal phase transition of vanadium dioxide nanostructures on silicon substrate: Applications for thermal control of spacecraft

    SciTech Connect

    Leahu, G. L. Li Voti, R. Larciprete, M. C. Belardini, A. Mura, F. Sibilia, C.; Bertolotti, M.; Fratoddi, I.

    2014-06-19

    We present a detailed infrared study of the semiconductor-to-metal transition (SMT) in a vanadium dioxide (VO2) film deposited on silicon wafer. The VO2 phase transition is studied in the mid-infrared (MIR) region by analyzing the transmittance and the reflectance measurements, and the calculated emissivity. The temperature behaviour of the emissivity during the SMT put into evidence the phenomenon of the anomalous absorption in VO2 which has been explained by applying the Maxwell Garnett effective medium approximation theory, together with a strong hysteresis phenomenon, both useful to design tunable thermal devices to be applied for the thermal control of spacecraft. We have also applied the photothermal radiometry in order to study the changes in the modulated emissivity induced by laser. Experimental results show how the use of these techniques represent a good tool for a quantitative measurement of the optothermal properties of vanadium dioxide based structures.

  11. Study of radial growth rate and size control of silicon nanocrystals in square-wave-modulated silane plasmas

    SciTech Connect

    Nguyen-Tran, Th.; Roca i Cabarrocas, P.; Patriarche, G.

    2007-09-10

    The growth of silicon nanocrystals in high pressure and high dilution silane plasmas is investigated by using the temporal evolution of the self-bias on the radio frequency electrode and transmission electron microscopy. A square-wave-modulated plasma was used in order to control the growth of monodispersed nanoparticles with sizes smaller than 12 nm. To this end, the plasma on time was kept below 1 s. The radial growth rate of nanoparticles was varied in the range from 7.5 to 75 nm/s by changing silane partial pressure. Nanoparticles grown in silane-helium discharges have been found amorphous while they are crystalline in silane-hydrogen-argon discharges. Surprisingly, the crystallization in the gaseous phase does not depend on how slow or fast the particles grow but on the presence of atomic hydrogen.

  12. High reliability megawatt transformer/rectifier

    NASA Technical Reports Server (NTRS)

    Zwass, Samuel; Ashe, Harry; Peters, John W.

    1991-01-01

    The goal of the two phase program is to develop the technology and design and fabricate ultralightweight high reliability DC to DC converters for space power applications. The converters will operate from a 5000 V dc source and deliver 1 MW of power at 100 kV dc. The power weight density goal is 0.1 kg/kW. The cycle to cycle voltage stability goals was + or - 1 percent RMS. The converter is to operate at an ambient temperature of -40 C with 16 minute power pulses and one hour off time. The uniqueness of the design in Phase 1 resided in the dc switching array which operates the converter at 20 kHz using Hollotron plasma switches along with a specially designed low loss, low leakage inductance and a light weight high voltage transformer. This approach reduced considerably the number of components in the converter thereby increasing the system reliability. To achieve an optimum transformer for this application, the design uses four 25 kV secondary windings to produce the 100 kV dc output, thus reducing the transformer leakage inductance, and the ac voltage stresses. A specially designed insulation system improves the high voltage dielectric withstanding ability and reduces the insulation path thickness thereby reducing the component weight. Tradeoff studies and tests conducted on scaled-down model circuits and using representative coil insulation paths have verified the calculated transformer wave shape parameters and the insulation system safety. In Phase 1 of the program a converter design approach was developed and a preliminary transformer design was completed. A fault control circuit was designed and a thermal profile of the converter was also developed.

  13. Silicon microfluidic flow focusing devices for the production of size-controlled PLGA based drug loaded microparticles.

    PubMed

    Keohane, Kieran; Brennan, Des; Galvin, Paul; Griffin, Brendan T

    2014-06-01

    The increasing realisation of the impact of size and surface properties on the bio-distribution of drug loaded colloidal particles has driven the application of micro fabrication technologies for the precise engineering of drug loaded microparticles. This paper demonstrates an alternative approach for producing size controlled drug loaded PLGA based microparticles using silicon Microfluidic Flow Focusing Devices (MFFDs). Based on the precise geometry and dimensions of the flow focusing channel, microparticle size was successfully optimised by modifying the polymer type, disperse phase (Qd) flow rate, and continuous phase (Qc) flow rate. The microparticles produced ranged in sizes from 5 to 50 μm and were highly monodisperse (coefficient of variation <5%). A comparison of Ciclosporin (CsA) loaded PLGA microparticles produced by MFFDs vs conventional production techniques was also performed. MFFDs produced microparticles with a narrower size distribution profile, relative to the conventional approaches. In-vitro release kinetics of CsA was found to be influenced by the production technique, with the MFFD approach demonstrating the slowest rate of release over 7 days (4.99 ± 0.26%). Finally, MFFDs were utilised to produce pegylated microparticles using the block co-polymer, PEG-PLGA. In contrast to the smooth microparticles produced using PLGA, PEG-PLGA microparticles displayed a highly porous surface morphology and rapid CsA release, with 85 ± 6.68% CsA released after 24h. The findings from this study demonstrate the utility of silicon MFFDs for the precise control of size and surface morphology of PLGA based microparticles with potential drug delivery applications.

  14. RF rectifiers for EM power harvesting in a Deep Brain Stimulating device.

    PubMed

    Hosain, Md Kamal; Kouzani, Abbas Z; Tye, Susannah; Kaynak, Akif; Berk, Michael

    2015-03-01

    A passive deep brain stimulation (DBS) device can be equipped with a rectenna, consisting of an antenna and a rectifier, to harvest energy from electromagnetic fields for its operation. This paper presents optimization of radio frequency rectifier circuits for wireless energy harvesting in a passive head-mountable DBS device. The aim is to achieve a compact size, high conversion efficiency, and high output voltage rectifier. Four different rectifiers based on the Delon doubler, Greinacher voltage tripler, Delon voltage quadrupler, and 2-stage charge pumped architectures are designed, simulated, fabricated, and evaluated. The design and simulation are conducted using Agilent Genesys at operating frequency of 915 MHz. A dielectric substrate of FR-4 with thickness of 1.6 mm, and surface mount devices (SMD) components are used to fabricate the designed rectifiers. The performance of the fabricated rectifiers is evaluated using a 915 MHz radio frequency (RF) energy source. The maximum measured conversion efficiency of the Delon doubler, Greinacher tripler, Delon quadrupler, and 2-stage charge pumped rectifiers are 78, 75, 73, and 76 % at -5 dBm input power and for load resistances of 5-15 kΩ. The conversion efficiency of the rectifiers decreases significantly with the increase in the input power level. The Delon doubler rectifier provides the highest efficiency at both -5 and 5 dBm input power levels, whereas the Delon quadrupler rectifier gives the lowest efficiency for the same inputs. By considering both efficiency and DC output voltage, the charge pump rectifier outperforms the other three rectifiers. Accordingly, the optimised 2-stage charge pumped rectifier is used together with an antenna to harvest energy in our DBS device. PMID:25600671

  15. RF rectifiers for EM power harvesting in a Deep Brain Stimulating device.

    PubMed

    Hosain, Md Kamal; Kouzani, Abbas Z; Tye, Susannah; Kaynak, Akif; Berk, Michael

    2015-03-01

    A passive deep brain stimulation (DBS) device can be equipped with a rectenna, consisting of an antenna and a rectifier, to harvest energy from electromagnetic fields for its operation. This paper presents optimization of radio frequency rectifier circuits for wireless energy harvesting in a passive head-mountable DBS device. The aim is to achieve a compact size, high conversion efficiency, and high output voltage rectifier. Four different rectifiers based on the Delon doubler, Greinacher voltage tripler, Delon voltage quadrupler, and 2-stage charge pumped architectures are designed, simulated, fabricated, and evaluated. The design and simulation are conducted using Agilent Genesys at operating frequency of 915 MHz. A dielectric substrate of FR-4 with thickness of 1.6 mm, and surface mount devices (SMD) components are used to fabricate the designed rectifiers. The performance of the fabricated rectifiers is evaluated using a 915 MHz radio frequency (RF) energy source. The maximum measured conversion efficiency of the Delon doubler, Greinacher tripler, Delon quadrupler, and 2-stage charge pumped rectifiers are 78, 75, 73, and 76 % at -5 dBm input power and for load resistances of 5-15 kΩ. The conversion efficiency of the rectifiers decreases significantly with the increase in the input power level. The Delon doubler rectifier provides the highest efficiency at both -5 and 5 dBm input power levels, whereas the Delon quadrupler rectifier gives the lowest efficiency for the same inputs. By considering both efficiency and DC output voltage, the charge pump rectifier outperforms the other three rectifiers. Accordingly, the optimised 2-stage charge pumped rectifier is used together with an antenna to harvest energy in our DBS device.

  16. Single-Phase Active Boost Rectifier with Power Factor Correction for Wireless Power Transfer Applications

    SciTech Connect

    Chinthavali, Madhu Sudhan; Onar, Omer C; Miller, John M; Tang, Lixin

    2013-01-01

    Wireless Power Transfer (WPT) technology is a novel research area in the charging technology that bridges utility and the automotive industries. There are various solutions that are currently being evaluated by several research teams to find the most efficient way to manage the power flow from the grid to the vehicle energy storage system. There are different control parameters that can be utilized to compensate for the change in the impedance. To understand the power flow through the system this paper presents a novel approach to the system model and the impact of different control parameters on the load power. The implementation of an active front-end rectifier on the grid side for power factor control and voltage boost capability for load power regulation is also discussed.

  17. Rectified cell migration on saw-like micro-elastically patterned hydrogels with asymmetric gradient ratchet teeth.

    PubMed

    Kidoaki, Satoru; Sakashita, Hiroyuki

    2013-01-01

    To control cell motility is one of the essential technologies for biomedical engineering. To establish a methodology of the surface design of elastic substrate to control the long-range cell movements, here we report a sophisticated cell culture hydrogel with a micro-elastically patterned surface that allows long-range durotaxis. This hydrogel has a saw-like pattern with asymmetric gradient ratchet teeth, and rectifies random cell movements. Durotaxis only occurs at boundaries in which the gradient strength of elasticity is above a threshold level. Consequently, in gels with unit teeth patterns, durotaxis should only occur at the sides of the teeth in which the gradient strength of elasticity is above this threshold level. Therefore, such gels are expected to support the long-range biased movement of cells via a mechanism similar to the Feynman-Smoluchowski ratchet, i.e., rectified cell migration. The present study verifies this working hypothesis by using photolithographic microelasticity patterning of photocurable gelatin gels. Gels in which each teeth unit was 100-120 µm wide with a ratio of ascending:descending elasticity gradient of 1:2 and a peak elasticity of ca. 100 kPa supported the efficient rectified migration of 3T3 fibroblast cells. In addition, long-range cell migration was most efficient when soft lanes were introduced perpendicular to the saw-like patterns. This study demonstrates that asymmetric elasticity gradient patterning of cell culture gels is a versatile means of manipulating cell motility. PMID:24147112

  18. Microcomputer controlled soft start of motor

    NASA Astrophysics Data System (ADS)

    Gao, Miao; Wang, Yanpeng; Li, Shian

    2005-12-01

    Improving the starting characteristics of a motor is an important part of the motor control. An intelligent soft starting technique was adopted in the starter and used in the present study because of its many advantages compared with conventional starting processes. The core of the soft starter was a single chip (Atmel 8098), its soul was the software and its control object was a Silicon Controlled Rectifier (SCR). The starter achieved not only current-limit starting, but also closed-loop control with a stator current detection circuit. In conclusion, as a result of digital control, starting characteristic can be conveniently chosen according to the load. In addition the starter is of small size, and starting is smooth and reliable due to current feedback.

  19. Controllably Interfacing with Ferroelectric Layer: A Strategy for Enhancing Water Oxidation on Silicon by Surface Polarization.

    PubMed

    Cui, Wei; Xia, Zhouhui; Wu, Shan; Chen, Fengjiao; Li, Yanguang; Sun, Baoquan

    2015-11-25

    Silicon (Si) is an important material in photoelectrochemical (PEC) water splitting because of its good light-harvesting capability as well as excellent charge-transport properties. However, the shallow valence band edge of Si hinders its PEC performance for water oxidation. Generally, thanks to their deep valence band edge, metal oxides are incorporated with Si to improve the performance, but they also decrease the transportation of carriers in the electrode. Here, we integrated a ferroelectric poly(vinylidene fluoride-trifluoroethylene) [P(VDF-TrFE)] layer with Si to increase the photovoltage as well as the saturated current density. Because of the prominent ferroelectric property from P(VDF-TrFE), the Schottky barrier between Si and the electrolyte can be facially tuned by manipulating the poling direction of the ferroelectric domains. The photovoltage is improved from 460 to 540 mV with a forward-poled P(VDF-TrFE) layer, while the current density increased from 5.8 to 12.4 mA/cm(2) at 1.23 V bias versus reversible hydrogen electrode.

  20. Kinetics and fracture resistance of lithiated silicon nanostructure pairs controlled by their mechanical interaction

    DOE PAGES

    Lee, Seok Woo; Lee, Hyun -Wook; Ryu, Ill; Nix, William D.; Gao, Huajian; Cui, Yi

    2015-06-26

    Following an explosion of studies of silicon as a negative electrode for Li-ion batteries, the anomalous volumetric changes and fracture of lithiated single Si particles have attracted significant attention in various fields, including mechanics. However, in real batteries, lithiation occurs simultaneously in clusters of Si in a confined medium. Hence, understanding how the individual Si structures interact during lithiation in a closed space is necessary. Here, we demonstrate physical and mechanical interactions of swelling Si structures during lithiation using well-defined Si nanopillar pairs. Ex situ SEM and in situ TEM studies reveal that compressive stresses change the reaction kinetics somore » that preferential lithiation occurs at free surfaces when the pillars are mechanically clamped. Such mechanical interactions enhance the fracture resistance of lithiated Si by lessening the tensile stress concentrations in Si structures. Lastly, this study will contribute to improved design of Si structures at the electrode level for high-performance Li-ion batteries.« less

  1. Kinetics and fracture resistance of lithiated silicon nanostructure pairs controlled by their mechanical interaction

    SciTech Connect

    Lee, Seok Woo; Lee, Hyun-Wook; Ryu, Ill; Nix, William D.; Gao, Huajian; Cui, Yi; /Stanford U., Materials Sci. Dept. /SLAC

    2015-06-01

    Following an explosion of studies of silicon as a negative electrode for Li-ion batteries, the anomalous volumetric changes and fracture of lithiated single Si particles have attracted significant attention in various fields, including mechanics. However, in real batteries, lithiation occurs simultaneously in clusters of Si in a confined medium. Hence, understanding how the individual Si structures interact during lithiation in a closed space is necessary. Herein, we demonstrate physical/mechanical interactions of swelling Si structures during lithiation using well-defined Si nanopillar pairs. Ex situ SEM and in situ TEM studies reveal that compressive stresses change the reaction kinetics so that preferential lithiation occurs at free surfaces when the pillars are mechanically clamped. Such mechanical interactions enhance the fracture resistance of This material is based upon work supported by the U.S. Department of Energy, Office of Science, Office of Basic Energy Sciences, Division of Materials Sciences and Engineering, under Contract No. DE-AC02-76SF00515. SLAC-PUB-16300 2 lithiated Si by lessening the tensile stress concentrations in Si structures. This study will contribute to improved design of Si structures at the electrode level for high performance Li-ion batteries.

  2. Stress-controlled silicon nitride film with high optical transmittance prepared by an ultrahigh-vacuum electron cyclotron resonance plasma chemical-vapor deposition system

    NASA Astrophysics Data System (ADS)

    Ahn, Jinho; Suzuki, Katsumi

    1994-06-01

    An ultrahigh-vaccuum electron cyclotron resonance plasma chemical-vapor deposition system with a substrate heating component has been applied to deposit silicon nitride film. Low background pressure (˜5×10-9 Torr) and efficient plasma excitation at a low deposition pressure (<10-3 Torr) result in a low oxygen impurity content in the silicon nitride film. Process flexibility of this system, i.e., control of the SiH4 to NH3 flow ratio, deposition pressure, and substrate temperature, allows the deposition of near-stoichiometry silicon nitride film with a high optical transmittance as well as a suppressed amount of hydrogen impurity and a low film stress.

  3. A limit on the effect of rectified diffusion in volcanic systems

    NASA Astrophysics Data System (ADS)

    Ichihara, M.; Brodsky, E. E.

    2006-01-01

    Forced oscillations can push dissolved volatiles into bubbles by a process called rectified diffusion. In engineering applications, the pumping action of rectified diffusion makes bubbles grow. In the geosciences, rectified diffusion is a suggested mechanism to trigger volcanic eruptions with seismic waves generated by distant earthquakes. Previous geoscience studies adopted the engineering results and proposed that in a confined system like a magma chamber, rectified diffusion causes pressure increase rather than bubble growth. However, the volcanic application is fundamentally different than engineering applications in that solubility continually changes with increasing pressure in the confined system. Here we present the first self-consistent treatment of rectified diffusion in a confined system. Evolving solubility has a significant effect. The new solution demonstrates that previous work significantly overestimated the effect of rectified diffusion in magmatic systems. For reasonable seismic wave amplitudes, the pressure change is at the most 2 × 10-9 of its initial value.

  4. Microfluidic assisted one-step fabrication of porous silicon@acetalated dextran nanocomposites for precisely controlled combination chemotherapy.

    PubMed

    Liu, Dongfei; Zhang, Hongbo; Mäkilä, Ermei; Fan, Jin; Herranz-Blanco, Bárbara; Wang, Chang-Fang; Rosa, Ricardo; Ribeiro, António J; Salonen, Jarno; Hirvonen, Jouni; Santos, Hélder A

    2015-01-01

    An advanced nanocomposite consisting of an encapsulated porous silicon (PSi) nanoparticle and an acid-degradable acetalated dextran (AcDX) matrix (nano-in-nano), was efficiently fabricated by a one-step microfluidic self-assembly approach. The obtained nano-in-nano PSi@AcDX composites showed improved surface smoothness, homogeneous size distribution, and considerably enhanced cytocompatibility. Furthermore, multiple drugs with different physicochemical properties have been simultaneously loaded into the nanocomposites with a ratiometric control. The release kinetics of all the payloads was predominantly controlled by the decomposition rate of the outer AcDX matrix. To facilitate the intracellular drug delivery, a nona-arginine cell-penetrating peptide (CPP) was chemically conjugated onto the surface of the nanocomposites by oxime click chemistry. Taking advantage of the significantly improved cell uptake, the proliferation of two breast cancer cell lines was markedly inhibited by the CPP-functionalized multidrug-loaded nanocomposites. Overall, this nano-in-nano PSi@polymer composite prepared by the microfluidic self-assembly approach is a universal platform for nanoparticles encapsulation and precisely controlled combination chemotherapy. PMID:25468375

  5. Microfluidic assisted one-step fabrication of porous silicon@acetalated dextran nanocomposites for precisely controlled combination chemotherapy.

    PubMed

    Liu, Dongfei; Zhang, Hongbo; Mäkilä, Ermei; Fan, Jin; Herranz-Blanco, Bárbara; Wang, Chang-Fang; Rosa, Ricardo; Ribeiro, António J; Salonen, Jarno; Hirvonen, Jouni; Santos, Hélder A

    2015-01-01

    An advanced nanocomposite consisting of an encapsulated porous silicon (PSi) nanoparticle and an acid-degradable acetalated dextran (AcDX) matrix (nano-in-nano), was efficiently fabricated by a one-step microfluidic self-assembly approach. The obtained nano-in-nano PSi@AcDX composites showed improved surface smoothness, homogeneous size distribution, and considerably enhanced cytocompatibility. Furthermore, multiple drugs with different physicochemical properties have been simultaneously loaded into the nanocomposites with a ratiometric control. The release kinetics of all the payloads was predominantly controlled by the decomposition rate of the outer AcDX matrix. To facilitate the intracellular drug delivery, a nona-arginine cell-penetrating peptide (CPP) was chemically conjugated onto the surface of the nanocomposites by oxime click chemistry. Taking advantage of the significantly improved cell uptake, the proliferation of two breast cancer cell lines was markedly inhibited by the CPP-functionalized multidrug-loaded nanocomposites. Overall, this nano-in-nano PSi@polymer composite prepared by the microfluidic self-assembly approach is a universal platform for nanoparticles encapsulation and precisely controlled combination chemotherapy.

  6. Glass frit bonding with controlled width and height using a two-step wet silicon etching procedure

    NASA Astrophysics Data System (ADS)

    Yifang, Liu; Daner, Chen; Liwei, Lin; Gaofeng, Zheng; Jianyi, Zheng; Lingyun, Wang; Daoheng, Sun

    2016-03-01

    A simple and versatile two-step silicon wet etching technique for the control of the width and height of the glass frit bonding layer has been developed to improve bonding strength and reliability in wafer-level microelectromechanical systems (MEMS) packaging processes. The height of the glass frit bonding layer is set by the design of a vertical reference wall which regulates the distance between the silicon wafer and the encapsulation capping substrate. On the other hand, the width of the bonding layer is constrained between two micro grooves which are used to accommodate the spillages of extra glass frit during the bonding process. An optimized thermal bonding process, including the formation of glass liquid, removal of gas bubbles under vacuum and the filling of voids under normal atmospheric condition has been developed to suppress the formation of the bubbles/voids. The stencil printing and pre-sintering processes for the glass frit have been characterized before the thermal bonding process under different magnitudes of bonding pressure. The bonding gap thickness is found to be equal to the height of the reference wall of 10 μm in the prototype design. The bubbles/voids are found to be suppressed effectively and the bonding strength increases from 10.2 to 19.1 MPa as compared with a conventional thermal annealing process in air. Experimentally, prototype samples are measured to have passed the high hermetic sealing leakage tests of 5  ×  10-8 atm cc s-1.

  7. Rectifying calibration error of Goldmann applanation tonometer is easy!

    PubMed

    Choudhari, Nikhil S; Moorthy, Krishna P; Tungikar, Vinod B; Kumar, Mohan; George, Ronnie; Rao, Harsha L; Senthil, Sirisha; Vijaya, Lingam; Garudadri, Chandra Sekhar

    2014-11-01

    Purpose: Goldmann applanation tonometer (GAT) is the current Gold standard tonometer. However, its calibration error is common and can go unnoticed in clinics. Its company repair has limitations. The purpose of this report is to describe a self-taught technique of rectifying calibration error of GAT. Materials and Methods: Twenty-nine slit-lamp-mounted Haag-Streit Goldmann tonometers (Model AT 900 C/M; Haag-Streit, Switzerland) were included in this cross-sectional interventional pilot study. The technique of rectification of calibration error of the tonometer involved cleaning and lubrication of the instrument followed by alignment of weights when lubrication alone didn't suffice. We followed the South East Asia Glaucoma Interest Group's definition of calibration error tolerance (acceptable GAT calibration error within ±2, ±3 and ±4 mm Hg at the 0, 20 and 60-mm Hg testing levels, respectively). Results: Twelve out of 29 (41.3%) GATs were out of calibration. The range of positive and negative calibration error at the clinically most important 20-mm Hg testing level was 0.5 to 20 mm Hg and -0.5 to -18 mm Hg, respectively. Cleaning and lubrication alone sufficed to rectify calibration error of 11 (91.6%) faulty instruments. Only one (8.3%) faulty GAT required alignment of the counter-weight. Conclusions: Rectification of calibration error of GAT is possible in-house. Cleaning and lubrication of GAT can be carried out even by eye care professionals and may suffice to rectify calibration error in the majority of faulty instruments. Such an exercise may drastically reduce the downtime of the Gold standard tonometer.

  8. Femtosecond laser-controlled self-assembly of amorphous-crystalline nanogratings in silicon

    NASA Astrophysics Data System (ADS)

    Puerto, Daniel; Garcia-Lechuga, Mario; Hernandez-Rueda, Javier; Garcia-Leis, Adianez; Sanchez-Cortes, Santiago; Solis, Javier; Siegel, Jan

    2016-07-01

    Self-assembly (SA) of molecular units to form regular, periodic extended structures is a powerful bottom-up technique for nanopatterning, inspired by nature. SA can be triggered in all classes of solid materials, for instance, by femtosecond laser pulses leading to the formation of laser-induced periodic surface structures (LIPSS) with a period slightly shorter than the laser wavelength. This approach, though, typically involves considerable material ablation, which leads to an unwanted increase of the surface roughness. We present a new strategy to fabricate high-precision nanograting structures in silicon, consisting of alternating amorphous and crystalline lines, with almost no material removal. The strategy can be applied to static irradiation experiments and can be extended into one and two dimensions by scanning the laser beam over the sample surface. We demonstrate that lines and areas with parallel nanofringe patterns can be written by an adequate choice of spot size, repetition rate and scan velocity, keeping a constant effective pulse number (N eff) per area for a given laser wavelength. A deviation from this pulse number leads either to inhomogeneous or ablative structures. Furthermore, we demonstrate that this approach can be used with different laser systems having widely different wavelengths (1030 nm, 800 nm, 400 nm), pulse durations (370 fs, 100 fs) and repetition rates (500 kHz, 100 Hz, single pulse) and that the grating period can also be tuned by changing the angle of laser beam incidence. The grating structures can be erased by irradiation with a single nanosecond laser pulse, triggering recrystallization of the amorphous stripes. Given the large differences in electrical conductivity between the two phases, our structures could find new applications in nanoelectronics.

  9. Controlled Synthesis of Millimeter-Long Silicon Nanowires with Uniform Electronic Properties

    PubMed Central

    Park, Won Il; Zheng, Gengfeng; Jiang, Xiaocheng; Tian, Bozhi; Lieber, Charles M.

    2009-01-01

    We report the nanocluster-catalyzed growth of ultra-long and highly-uniform single-crystalline silicon nanowires (SiNWs) with millimeter-scale lengths and aspect ratios up to ca. 100,000. The average SiNW growth rate using disilane (Si2H6) at 400 °C was 31 µm/min, while the growth rate determined for silane (SiH4) reactant under similar growth conditions was 130 times lower. Transmission electron microscopy studies of millimeter-long SiNWs with diameters of 20–80 nm show that the nanowires grow preferentially along the <110> direction independent of diameter. In addition, ultra-long SiNWs were used as building blocks to fabricate one-dimensional arrays of field-effect transistors (FETs) consisting of ca. 100 independent devices per nanowire. Significantly, electrical transport measurements demonstrated that the millimeter-long SiNWs had uniform electrical properties along the entire length of wires, and each device can behave as a reliable FET with an on-state current, threshold voltage, and transconductance values (average ± 1 standard deviation) of 1.8 ± 0.3 µA, 6.0 ± 1.1 V, 210 ± 60 nS, respectively. Electronically-uniform millimeter-long SiNWs were also functionalized with monoclonal antibody receptors, and used to demonstrate multiplexed detection of cancer marker proteins with a single nanowire. The synthesis of structurally- and electronically-uniform ultra-long SiNWs may open up new opportunities for integrated nanoelectronics, and could serve as unique building blocks linking integrated structures from the nanometer through millimeter length scales. PMID:18710294

  10. Atomic scale control and understanding of cubic silicon carbide surface reconstructions, nanostructures and nanochemistry

    NASA Astrophysics Data System (ADS)

    Soukiassian, Patrick G.; Enriquez, Hanna B.

    2004-05-01

    The atomic scale ordering and properties of cubic silicon carbide (bgr-SiC) surfaces and nanostructures are investigated by atom-resolved room and high-temperature scanning tunnelling microscopy (STM) and spectroscopy (STS), synchrotron radiation-based valence band and core level photoelectron spectroscopy (VB-PES, CL-PES) and grazing incidence x-ray diffraction (GIXRD). In this paper, we review the latest results on the atomic scale understanding of (i) the structure of bgr-SiC(100) surface reconstructions, (ii) temperature-induced metallic surface phase transition, (iii) one dimensional Si(C) self-organized nanostructures having unprecedented characteristics, and on (iv) nanochemistry at SiC surfaces with hydrogen. The organization of these surface reconstructions as well as the 1D nanostructures' self-organization are primarily driven by surface stress. In this paper, we address such important issues as (i) the structure of the Si-rich 3 × 2, the Si-terminated c (4 × 2), the C-terminated c (2 × 2) reconstructions of the bgr-SiC(100) surface, (ii) the temperature-induced reversible {\\mathrm {c}}(4\\times 2) \\Leftrightarrow 2\\times 1 metallic phase transition, (iii) the formation of highly stable (up to 900 °C) Si atomic and vacancy lines, (iv) the temperature-induced sp to sp3 diamond like surface transformation, and (v) the first example of H-induced semiconductor surface metallization on the bgr-SiC (100) 3 × 2 surface. The results are discussed and compared to other experimental and theoretical investigations.

  11. Ultrafast active control of localized surface plasmon resonances in silicon bowtie antennas.

    PubMed

    Berrier, Audrey; Ulbricht, Ronald; Bonn, Mischa; Rivas, Jaime Gómez

    2010-10-25

    Localized surface plasmon polaritons (LSPPs) provide an efficient means of achieving extreme light concentration. In recent years, their active control has become a major aspiration of plasmonic research. Here, we demonstrate direct control of semiconductor bowtie antennas, enabling active excitation of LSPPs, at terahertz (THz) frequencies. We modify the LSPPs by ultrafast optical modulation of the free carrier density in the plasmonic structure itself, allowing for active control of the semiconductor antennas on picosecond timescales. Moreover, this control enables the manipulation of the field intensity enhancements in ranges of four orders of magnitude. PMID:21164664

  12. Periodically poled silicon

    NASA Astrophysics Data System (ADS)

    Hon, Nick K.; Tsia, Kevin K.; Solli, Daniel R.; Khurgin, Jacob B.; Jalali, Bahram

    2010-02-01

    Bulk centrosymmetric silicon lacks second-order optical nonlinearity χ(2) - a foundational component of nonlinear optics. Here, we propose a new class of photonic device which enables χ(2) as well as quasi-phase matching based on periodic stress fields in silicon - periodically-poled silicon (PePSi). This concept adds the periodic poling capability to silicon photonics, and allows the excellent crystal quality and advanced manufacturing capabilities of silicon to be harnessed for devices based on χ(2)) effects. The concept can also be simply achieved by having periodic arrangement of stressed thin films along a silicon waveguide. As an example of the utility, we present simulations showing that mid-wave infrared radiation can be efficiently generated through difference frequency generation from near-infrared with a conversion efficiency of 50% based on χ(2) values measurements for strained silicon reported in the literature [Jacobson et al. Nature 441, 199 (2006)]. The use of PePSi for frequency conversion can also be extended to terahertz generation. With integrated piezoelectric material, dynamically control of χ(2)nonlinearity in PePSi waveguide may also be achieved. The successful realization of PePSi based devices depends on the strength of the stress induced χ(2) in silicon. Presently, there exists a significant discrepancy in the literature between the theoretical and experimentally measured values. We present a simple theoretical model that produces result consistent with prior theoretical works and use this model to identify possible reasons for this discrepancy.

  13. D0 Silicon Strip Detector Upgrade Project SVX Sequencer Controller Board

    SciTech Connect

    Utes, M.; /Fermilab

    2001-05-29

    The Sequencer Controller boards are 9U by 340mm circuit boards that will reside in slot 1 of each of eight Sequencer crates in the D0 detector platform. The primary purpose is to control the Sequencers during data acquisition based on trigger information from the D0 Trigger Framework. Functions and features are as follows: (1) Receives the Serial Command Link (SCL) from the D0 Trigger System and controls the operation of the Sequencers by forming a custom serial control link (NRZ/Clock) which is distributed individually to each Sequencer via the 11 Backplane; (2) Controllable delays adjust NRZ control link phasing to compensate for the various cable-length delays between the Sequencers and SVX chips, delay control is common for slots 2-11, and for slots 12-21 of the crate; (3) Each NRZ control link is phase controlled so that commands reach each Sequencer in a given half-crate simultaneously, i.e., the link is compensated for backplane propagation delays; (4) External communication via MIL-STD-1553; (5) Stand-alone operation via 1553 trigger commands in absence of an SCL link; (6) 1553-writeable register for triggering a laser, etc. followed by an acquisition cycle; (7) TTL front panel input to trigger an acquisition cycle, e.g. from a scintillator; (8) Synch Trig, Veto, Busy and Preamp Reset TTL outputs on front panel LEMOs; (9) On-board 53.104 MHz oscillator for stand-alone operation; (10) 1553 or SCL-triggerable Cal-inject cycle; (11) Front-panel inputs to accept NRZ/Clock link from the VRB Controller; (12) Front panel displays and LEDs show the board status at a glance; and (13) In-system programmable EPLDs are programmed via Altera's 'Byteblaster'.

  14. Bi-Sn alloy catalyst for simultaneous morphology and doping control of silicon nanowires in radial junction solar cells

    SciTech Connect

    Yu, Zhongwei; Lu, Jiawen; Qian, Shengyi; Xu, Jun; Xu, Ling; Wang, Junzhuan; Shi, Yi; Chen, Kunji; Yu, Linwei E-mail: linwei.yu@polytechnique.edu

    2015-10-19

    Low-melting point metals such as bismuth (Bi) and tin (Sn) are ideal choices for mediating a low temperature growth of silicon nanowires (SiNWs) for radial junction thin film solar cells. The incorporation of Bi catalyst atoms leads to sufficient n-type doping in the SiNWs core that exempts the use of hazardous dopant gases, while an easy morphology control with pure Bi catalyst has never been demonstrated so far. We here propose a Bi-Sn alloy catalyst strategy to achieve both a beneficial catalyst-doping and an ideal SiNW morphology control. In addition to a potential of further growth temperature reduction, we show that the alloy catalyst can remain quite stable during a vapor-liquid-solid growth, while providing still sufficient n-type catalyst-doping to the SiNWs. Radial junction solar cells constructed over the alloy-catalyzed SiNWs have demonstrated a strongly enhanced photocurrent generation, thanks to optimized nanowire morphology, and largely improved performance compared to the reference samples based on the pure Bi or Sn-catalyzed SiNWs.

  15. Bi-Sn alloy catalyst for simultaneous morphology and doping control of silicon nanowires in radial junction solar cells

    NASA Astrophysics Data System (ADS)

    Yu, Zhongwei; Lu, Jiawen; Qian, Shengyi; Misra, Soumyadeep; Yu, Linwei; Xu, Jun; Xu, Ling; Wang, Junzhuan; Shi, Yi; Chen, Kunji; Roca i Cabarrocas, Pere

    2015-10-01

    Low-melting point metals such as bismuth (Bi) and tin (Sn) are ideal choices for mediating a low temperature growth of silicon nanowires (SiNWs) for radial junction thin film solar cells. The incorporation of Bi catalyst atoms leads to sufficient n-type doping in the SiNWs core that exempts the use of hazardous dopant gases, while an easy morphology control with pure Bi catalyst has never been demonstrated so far. We here propose a Bi-Sn alloy catalyst strategy to achieve both a beneficial catalyst-doping and an ideal SiNW morphology control. In addition to a potential of further growth temperature reduction, we show that the alloy catalyst can remain quite stable during a vapor-liquid-solid growth, while providing still sufficient n-type catalyst-doping to the SiNWs. Radial junction solar cells constructed over the alloy-catalyzed SiNWs have demonstrated a strongly enhanced photocurrent generation, thanks to optimized nanowire morphology, and largely improved performance compared to the reference samples based on the pure Bi or Sn-catalyzed SiNWs.

  16. Intravitreal Controlled Release of Dexamethasone from Engineered Microparticles of Porous Silicon Dioxide

    PubMed Central

    Wang, Chengyun; Hou, Huiyuan; Nan, Kaihui; Sailor, Michael J; Freeman, William R.; Cheng, Lingyun

    2014-01-01

    Dexamethasone is a glucocorticoid that is widely used in the ophthalmic arena. The recent FDA approved dexamethasone implant can provide a three month efficacy but with high rate of drug related cataract and high intraocular pressure (IOP). It seems that higher steroid in aqueous humor and around lens may be associated with these complications based on clinical fact that higher IOP was observed with intravitreal triamcinolone acetonide (TA) than with subtenon TA. We hypothesize that placing a sustained dexamethasone release system near back of the eye through a fine needle can maximize efficacy while mitigate higher rate of IOP rise and cataract. To develop a sustained intravitreal dexamethasone delivery system, porous silicon dioxide (pSiO2) microparticles were fabricated and functionalized with amines as well as carboxyl groups. Dexamethasone was conjugated to pSiO2 through the Steglich Esterificaion Reaction between hydroxyl of dexamethasone and carboxyl groups on the pSiO2. The drug loading was confirmed by Fourier transform infrared spectroscopy (FTIR) and loading efficiency was quantitated using thermogravimetric analysis (TGA). In vitro release was conducted for three months and dexamethasone was confirmed in the released samples using liquid chromatography-tandem mass spectrometry (LC/MS/MS). A pilot ocular safety and determination of vitreous drug level was performed in rabbit eyes. The drug loading study demonstrated that loading efficiency was from 5.96% to 10.77% depending on the loading reaction time, being higher with longer loading reaction time before reaching saturation around 7 days. In vitro drug release study revealed that dexamethasone release from pSiO2 particles was sustainable for over 90 days and was 80 days longer than free dexamethasone or infiltration-loaded pSiO2 particle formulation in the same setting. Pilot in vivo study demonstrated no sign of ocular adverse reaction in rabbit eyes following a single 3 mg intravitreal injection and

  17. Intravitreal controlled release of dexamethasone from engineered microparticles of porous silicon dioxide.

    PubMed

    Wang, Chengyun; Hou, Huiyuan; Nan, Kaihui; Sailor, Michael J; Freeman, William R; Cheng, Lingyun

    2014-12-01

    Dexamethasone is a glucocorticoid that is widely used in the ophthalmic arena. The recent FDA approved dexamethasone implant can provide a three month efficacy but with high rate of drug related cataract and high intraocular pressure (IOP). It seems that higher steroid in aqueous humor and around lens may be associated with these complications based on clinical fact that higher IOP was observed with intravitreal triamcinolone acetonide (TA) than with subtenon TA. We hypothesize that placing a sustained dexamethasone release system near back of the eye through a fine needle can maximize efficacy while mitigate higher rate of IOP rise and cataract. To develop a sustained intravitreal dexamethasone delivery system, porous silicon dioxide (pSiO2) microparticles were fabricated and functionalized with amines as well as carboxyl groups. Dexamethasone was conjugated to pSiO2 through the Steglich Esterification Reaction between hydroxyl of dexamethasone and carboxyl groups on the pSiO2. The drug loading was confirmed by Fourier transform infrared spectroscopy (FTIR) and loading efficiency was quantitated using thermogravimetric analysis (TGA). In vitro release was conducted for three months and dexamethasone was confirmed in the released samples using liquid chromatography-tandem mass spectrometry (LC/MS/MS). A pilot ocular safety and determination of vitreous drug level was performed in rabbit eyes. The drug loading study demonstrated that loading efficiency was from 5.96% to 10.77% depending on the loading reaction time, being higher with longer loading reaction time before reaching saturation around 7 days. In vitro drug release study revealed that dexamethasone release from pSiO2 particles was sustainable for over 90 days and was 80 days longer than free dexamethasone or infiltration-loaded pSiO2 particle formulation in the same setting. Pilot in vivo study demonstrated no sign of ocular adverse reaction in rabbit eyes following a single 3 mg intravitreal injection and

  18. Rectifying social inequalities in a resource allocation task.

    PubMed

    Elenbaas, Laura; Rizzo, Michael T; Cooley, Shelby; Killen, Melanie

    2016-10-01

    To investigate whether children rectify social inequalities in a resource allocation task, participants (N=185 African-American and European-American 5-6year-olds and 10-11year-olds) witnessed an inequality of school supplies between peers of different racial backgrounds. Assessments were conducted on how children judged the wrongfulness of the inequality, allocated new resources to racial ingroup and outgroup recipients, evaluated alternative allocation strategies, and reasoned about their decisions. Younger children showed ingroup favorability; their responses differed depending on whether they had witnessed their ingroup or an outgroup at a disadvantage. With age, children increasingly reasoned about the importance of equal access to school supplies and correcting past disparities. Older children judged the resource inequality negatively, allocated more resources to the disadvantaged group, and positively evaluated the actions of others who did the same, regardless of whether they had seen their racial ingroup or an outgroup at a disadvantage. Thus, balancing moral and social group concerns enabled individuals to rectify inequalities and ensure fair access to important resources regardless of racial group membership. PMID:27423813

  19. The rectifying device for optical axis of sighting devices

    NASA Astrophysics Data System (ADS)

    Fu, RongGuo; Chang, BenKang; Qian, YunSheng; Zhan, QiHai; Qiu, YaFeng

    2005-02-01

    The combination photo electronic sighting device usually composed of different optical devices, including telescope and low light level night vision device or infrared thermal imaging system. Every optical axle of the optical device of the combination sighting device is needed to be parallel. When a target away enough from the sighting device is observed, if the images of the target locate on the center of the field of the vision of the different optical devices, it shows that the axis are parallel. According to this principle, a rectifying device for optical axis of sighting device is designed. It includes off-axle paraboloid reflector, the target of cross line, light sources, precision modifying devices and other devices. The target of cross line is put on the focus of the off-axle paraboloid reflector, thus it forms a parallel light beam through the off-axle paraboloid reflector, the sighting device is immerged in the parallel light beam. The observing effect is like a target of long distance. The target is connected with a precision modifying device, by moving modifying device, until the image of the target coincide with the center of the field of vision of every optical device, whose degree of deviation of the optical axle can be calculated. The paper gives the structure of the rectifying device and the way of testing. The parameters of the device is given too.

  20. Rectifying social inequalities in a resource allocation task.

    PubMed

    Elenbaas, Laura; Rizzo, Michael T; Cooley, Shelby; Killen, Melanie

    2016-10-01

    To investigate whether children rectify social inequalities in a resource allocation task, participants (N=185 African-American and European-American 5-6year-olds and 10-11year-olds) witnessed an inequality of school supplies between peers of different racial backgrounds. Assessments were conducted on how children judged the wrongfulness of the inequality, allocated new resources to racial ingroup and outgroup recipients, evaluated alternative allocation strategies, and reasoned about their decisions. Younger children showed ingroup favorability; their responses differed depending on whether they had witnessed their ingroup or an outgroup at a disadvantage. With age, children increasingly reasoned about the importance of equal access to school supplies and correcting past disparities. Older children judged the resource inequality negatively, allocated more resources to the disadvantaged group, and positively evaluated the actions of others who did the same, regardless of whether they had seen their racial ingroup or an outgroup at a disadvantage. Thus, balancing moral and social group concerns enabled individuals to rectify inequalities and ensure fair access to important resources regardless of racial group membership.

  1. Reduction of burn scar formation by halofuginone-eluting silicone gel sheets: a controlled study on nude mice.

    PubMed

    Zeplin, Philip H

    2012-03-01

    Burn scar formations can cause disfiguration and loss of dermal function. The purpose of this study was to examine whether application of modified silicone gel sheets with an antifibrotic drug halofuginone-eluting hybrid surface produce an effect on scar development. There were a total of 2 animal groups. The athymic nude mice (nu/nu) of both groups underwent transplantation of full-thickness human skin grafts onto their backs and setting of partial thickness burn injury. The status of local scar development was observed over a period of 3 months after the application of silicone gel sheets and also after application of surface-modified halofuginone-eluting silicone gel sheets. Subsequently, via real-time polymerase chain reaction, the cDNA levels from key mediators of scar formation (transforming growth factor beta, COL1A1, connective tissue growth factor, fibroblast growth factor 2, matrix metalloproteinase 2, matrix metalloproteinase 9) were established and statistically evaluated. In comparison with uncoated silicone gel sheets, the application of halofuginone-eluting silicone gel sheets lead to a significant difference in gene expression activity in scar tissue. Halofuginone-eluting hybrid surface silicone gel sheets significantly increase the antiscarring effect of adhesive silicone gel sheets by deceleration and downregulation of scar development by normalization of the expression activity.

  2. A novel solid-state thermal rectifier based on reduced graphene oxide.

    PubMed

    Tian, He; Xie, Dan; Yang, Yi; Ren, Tian-Ling; Zhang, Gang; Wang, Yu-Feng; Zhou, Chang-Jian; Peng, Ping-Gang; Wang, Li-Gang; Liu, Li-Tian

    2012-01-01

    Recently, manipulating heat transport by phononic devices has received significant attention, in which phonon--a heat pulse through lattice, is used to carry energy. In addition to heat control, the thermal devices might also have broad applications in the renewable energy engineering, such as thermoelectric energy harvesting. Elementary phononic devices such as diode, transistor and logic devices have been theoretically proposed. In this work, we experimentally create a macroscopic scale thermal rectifier based on reduced graphene oxide. Obvious thermal rectification ratio up to 1.21 under 12 K temperature bias has been observed. Moreover, this ratio can be enhanced further by increasing the asymmetric ratio. Collectively, our results raise the exciting prospect that the realization of macroscopic phononic device with large-area graphene based materials is technologically feasible, which may open up important applications in thermal circuits and thermal management.

  3. On the Control of the Fixed Charge Densities in Al2O3-Based Silicon Surface Passivation Schemes.

    PubMed

    Simon, Daniel K; Jordan, Paul M; Mikolajick, Thomas; Dirnstorfer, Ingo

    2015-12-30

    A controlled field-effect passivation by a well-defined density of fixed charges is crucial for modern solar cell surface passivation schemes. Al2O3 nanolayers grown by atomic layer deposition contain negative fixed charges. Electrical measurements on slant-etched layers reveal that these charges are located within a 1 nm distance to the interface with the Si substrate. When inserting additional interface layers, the fixed charge density can be continuously adjusted from 3.5 × 10(12) cm(-2) (negative polarity) to 0.0 and up to 4.0 × 10(12) cm(-2) (positive polarity). A HfO2 interface layer of one or more monolayers reduces the negative fixed charges in Al2O3 to zero. The role of HfO2 is described as an inert spacer controlling the distance between Al2O3 and the Si substrate. It is suggested that this spacer alters the nonstoichiometric initial Al2O3 growth regime, which is responsible for the charge formation. On the basis of this charge-free HfO2/Al2O3 stack, negative or positive fixed charges can be formed by introducing additional thin Al2O3 or SiO2 layers between the Si substrate and this HfO2/Al2O3 capping layer. All stacks provide very good passivation of the silicon surface. The measured effective carrier lifetimes are between 1 and 30 ms. This charge control in Al2O3 nanolayers allows the construction of zero-fixed-charge passivation layers as well as layers with tailored fixed charge densities for future solar cell concepts and other field-effect based devices.

  4. D0 Silicon Upgrade: Cryolab Control Valve Modification Information for D0-EVMF-H

    SciTech Connect

    Rucincki, Russ; /Fermilab

    1995-10-26

    This engineering note documents some information regarding the solenoid magnet flow valve, EVMF. See also EN-437 'Control Dewar valve sizing' also for further information on this valve. This note documents the modification done to the valve to change it to a Cv = 0.32.

  5. Improvement of the voltage-controlled negative resistance of a porous silicon emitter using cathode reduction and electro-pretreatment

    NASA Astrophysics Data System (ADS)

    He, Li; Zhang, Xiaoning; Wang, Wenjiang; Zhao, Xiaoning

    2016-09-01

    A new composite treatment method combining cathode reduction (CR) and electro-pretreatment (EP) is proposed to improve the voltage-controlled negative resistance (VCNR) of porous silicon (PS) emitters. Four groups of PS emitters were treated, with nothing, CR, EP, and a combination of CR and EP, during different preparation stages. The experimental results indicate that both CR and EP improved the VCNR property and the emission characteristics of the PS emitter. The most favorable results occurred for the electron emitter treated with a combination of CR-EP. A peak-to-valley current ratio of 1.06 and an emission current density of 150 µA cm-2, which are the lowest value and approximately twice that of other samples, respectively, were obtained. In addition, the operating stability of the PS emitter also improved significantly compared with the two methods alone. Scanning electron microscopy, atomic force microscopy, and energy dispersive x-ray spectrometry results demonstrate that the improvements of the VCNR and the emission characteristics of PS emitters are due to the content variation of defects, impurities, and unstable microstructures in the PS layer under the influence of CR and EP. The mechanism of VCNR behavior is explained by a proposed energy band model, which is consistent with the experimental results.

  6. Improvement of the voltage-controlled negative resistance of a porous silicon emitter using cathode reduction and electro-pretreatment

    NASA Astrophysics Data System (ADS)

    He, Li; Zhang, Xiaoning; Wang, Wenjiang; Zhao, Xiaoning

    2016-09-01

    A new composite treatment method combining cathode reduction (CR) and electro-pretreatment (EP) is proposed to improve the voltage-controlled negative resistance (VCNR) of porous silicon (PS) emitters. Four groups of PS emitters were treated, with nothing, CR, EP, and a combination of CR and EP, during different preparation stages. The experimental results indicate that both CR and EP improved the VCNR property and the emission characteristics of the PS emitter. The most favorable results occurred for the electron emitter treated with a combination of CR–EP. A peak-to-valley current ratio of 1.06 and an emission current density of 150 µA cm‑2, which are the lowest value and approximately twice that of other samples, respectively, were obtained. In addition, the operating stability of the PS emitter also improved significantly compared with the two methods alone. Scanning electron microscopy, atomic force microscopy, and energy dispersive x-ray spectrometry results demonstrate that the improvements of the VCNR and the emission characteristics of PS emitters are due to the content variation of defects, impurities, and unstable microstructures in the PS layer under the influence of CR and EP. The mechanism of VCNR behavior is explained by a proposed energy band model, which is consistent with the experimental results.

  7. DNA Physical Mapping via the Controlled Translocation of Single Molecules through a 5-10nm Silicon Nitride Nanopore

    NASA Astrophysics Data System (ADS)

    Stein, Derek; Reisner, Walter; Jiang, Zhijun; Hagerty, Nick; Wood, Charles; Chan, Jason

    2009-03-01

    The ability to map the binding position of sequence-specific markers, including transcription-factors, protein-nucleic acids (PNAs) or deactivated restriction enzymes, along a single DNA molecule in a nanofluidic device would be of key importance for the life-sciences. Such markers could give an indication of the active genes at particular stage in a cell's transcriptional cycle, pinpoint the location of mutations or even provide a DNA barcode that could aid in genomics applications. We have developed a setup consisting of a 5-10 nm nanopore in a 20nm thick silicon nitride film coupled to an optical tweezer setup. The translocation of DNA across the nanopore can be detected via blockades in the electrical current through the pore. By anchoring one end of the translocating DNA to an optically trapped microsphere, we hope to stretch out the molecule in the nanopore and control the translocation speed, enabling us to slowly scan across the genome and detect changes in the baseline current due to the presence of bound markers.

  8. Electrical Properties of Silicon Nitride Films Prepared by Photo-Assisted Chemical Vapor Deposition under Controlled Decomposition of Ammonia

    NASA Astrophysics Data System (ADS)

    Yoshimoto, Masahiro; Ohtsuki, Tetsuya; Takubo, Kenji; Komoda, Michio; Matsunami, Hiroyuki

    1993-12-01

    Silicon nitride (SiNx) films have been deposited at lower substrate temperatures (≤500°C) by direct (without Hg-sensitization) photo-chemical vapor deposition (photo-CVD) with a low-pressure Hg lamp using SiH4 and NH3. The resistivity was as high as 5× 1016 Ωcm. The minimum value of interface-trap density in Al/SiNx/Si metal-nitride-semiconductor (MNS) diodes was estimated to be 9× 1010 cm-2 eV-1 by a quasi-static capacitance-voltage measurement. In contrast to conventional plasma CVD of SiNx, the formation of intermediate species is controlled by the decomposition of NH3 which is decomposed to a lesser extent in a plasma process, based on analyses of film structures and transient mass spectroscopy. This effect causes the properties of SiNx to not change in a wide range of NH3/SiH4 gas composition.

  9. Low temperature synthesis of silicon quantum dots with plasma chemistry control in dual frequency non-thermal plasmas.

    PubMed

    Sahu, Bibhuti Bhusan; Yin, Yongyi; Han, Jeon Geon; Shiratani, Masaharu

    2016-06-21

    The advanced materials process by non-thermal plasmas with a high plasma density allows the synthesis of small-to-big sized Si quantum dots by combining low-temperature deposition with superior crystalline quality in the background of an amorphous hydrogenated silicon nitride matrix. Here, we make quantum dot thin films in a reactive mixture of ammonia/silane/hydrogen utilizing dual-frequency capacitively coupled plasmas with high atomic hydrogen and nitrogen radical densities. Systematic data analysis using different film and plasma characterization tools reveals that the quantum dots with different sizes exhibit size dependent film properties, which are sensitively dependent on plasma characteristics. These films exhibit intense photoluminescence in the visible range with violet to orange colors and with narrow to broad widths (∼0.3-0.9 eV). The observed luminescence behavior can come from the quantum confinement effect, quasi-direct band-to-band recombination, and variation of atomic hydrogen and nitrogen radicals in the film growth network. The high luminescence yields in the visible range of the spectrum and size-tunable low-temperature synthesis with plasma and radical control make these quantum dot films good candidates for light emitting applications. PMID:27226277

  10. An Error Diagnosis Technique Based on Location Sets to Rectify Subcircuits

    NASA Astrophysics Data System (ADS)

    Shioki, Kosuke; Okada, Narumi; Ishihara, Toshiro; Hirose, Tetsuya; Kuroki, Nobutaka; Numa, Masahiro

    This paper presents an error diagnosis technique for incremental synthesis, called EXLLS (Extended X-algorithm for LUT-based circuit model based on Location sets to rectify Subcircuits), which rectifies five or more functional errors in the whole circuit based on location sets to rectify subcircuits. Conventional error diagnosis technique, called EXLIT, tries to rectify five or more functional errors based on incremental rectification for subcircuits. However, the solution depends on the selection and the order of modifications on subcircuits, which increases the number of locations to be changed. To overcome this problem, we propose EXLLS based on location sets to rectify subcircuits, which obtains two or more solutions by separating i) extraction of location sets to be rectified, and ii) rectification for the whole circuit based on the location sets. Thereby EXLLS can rectify five or more errors with fewer locations to change. Experimental results have shown that EXLLS reduces increase in the number of locations to be rectified with conventional technique by 90.1%.

  11. 27 CFR 1.21 - Domestic producers, rectifiers, blenders, and warehousemen.

    Code of Federal Regulations, 2010 CFR

    2010-04-01

    ... 27 Alcohol, Tobacco Products and Firearms 1 2010-04-01 2010-04-01 false Domestic producers, rectifiers, blenders, and warehousemen. 1.21 Section 1.21 Alcohol, Tobacco Products and Firearms ALCOHOL AND... BOTTLING OF DISTILLED SPIRITS Basic Permits When Required § 1.21 Domestic producers, rectifiers,...

  12. 27 CFR 1.21 - Domestic producers, rectifiers, blenders, and warehousemen.

    Code of Federal Regulations, 2011 CFR

    2011-04-01

    ... 27 Alcohol, Tobacco Products and Firearms 1 2011-04-01 2011-04-01 false Domestic producers, rectifiers, blenders, and warehousemen. 1.21 Section 1.21 Alcohol, Tobacco Products and Firearms ALCOHOL AND... BOTTLING OF DISTILLED SPIRITS Basic Permits When Required § 1.21 Domestic producers, rectifiers,...

  13. Copper-capped carbon nanocones on silicon: plasma-enabled growth control.

    PubMed

    Kumar, Shailesh; Levchenko, Igor; Farrant, David; Keidar, Michael; Kersten, Holger; Ostrikov, Kostya Ken

    2012-11-01

    Controlled self-organized growth of vertically aligned carbon nanocone arrays in a radio frequency inductively coupled plasma-based process is studied. The experiments have demonstrated that the gaps between the nanocones, density of the nanocone array, and the shape of the nanocones can be effectively controlled by the process parameters such as gas composition (hydrogen content) and electrical bias applied to the substrate. Optical measurements have demonstrated lower reflectance of the nanocone array as compared with a bare Si wafer, thus evidencing their potential for the use in optical devices. The nanocone formation mechanism is explained in terms of redistribution of surface and volumetric fluxes of plasma-generated species in a developing nanocone array and passivation of carbon in narrow gaps where the access of plasma ions is hindered. Extensive numerical simulations were used to support the proposed growth mechanism.

  14. Effect of temperature on rectified diffusion during ultrasound-induced heating.

    PubMed

    Webb, Ian R; Payne, Stephen J; Coussios, Constantin-C

    2011-11-01

    Experimental observations of delayed-onset cavitation during ultrasound insonation have been suggested as being caused by a change in the size distribution of the bubble population due to rectified diffusion. To investigate this hypothesis, a single bubble model is used here to explore the effect of heating and the subsequent elevated temperatures on the rectified diffusion process. Numerical solution of the model, which includes the temperature dependences of seven relevant physical parameters, allows quantification of the change in the pressure threshold for rectified diffusion, as well as the importance of the bulk liquid saturation concentration in determining bubble evolution. Although elevated temperatures and liquid supersaturation reduce the rectified diffusion threshold, it remains coincident with the inertial cavitation thresholds at submicron bubble sizes at all temperatures. This observation suggests that changes in the nucleation environment, rather than bubble growth due to rectified diffusion, is a more likely cause of delayed-onset cavitation events.

  15. Input Power Quality Improvement in Switched Reluctance Motor Drive using Minnesota Rectifier

    NASA Astrophysics Data System (ADS)

    Singh, B.; Rajesh, M.

    2013-09-01

    This paper deals with an input power quality improvement in a midpoint converter based switched reluctance motor (SRM) drive at ac mains using Minnesota rectifier. Normally a midpoint converter is used as a power converter for SRM drive. Conventionally three phase ac mains fed bridge rectifier is used as a dc source to feed this power converter which produces high content of harmonics at ac mains with a very low power factor. The proposed Minnesota rectifier with a midpoint converter fed SRM drive improves the power factor at ac mains with low current harmonics. This method provides constant dc link voltage and balanced capacitor voltages of the midpoint converter. The Minnesota rectifier fed SRM drive is modelled and its performance is simulated in Matlab/Simulink environment. The performance of Minnesota rectifier is compared with a conventional bridge topology for SRM drive to demonstrate improved power quality at ac mains.

  16. Polarization beam splitters, converters and analyzers based on a metasurface composed of regularly arranged silicon nanospheres with controllable coupling strength.

    PubMed

    Xiang, Jin; Li, Jinxiang; Li, Hui; Zhang, Chengyun; Dai, Qiaofeng; Tie, Shaolong; Lan, Sheng

    2016-05-30

    A metasurface composed of regularly arranged silicon (Si) nanospheres (NSs) with coupling was investigated both theoretically and numerically based on the Mie theory, the simple Lorentz line shape model and the finite-difference time-domain technique. By deliberately controlling the coupling strength between Si NSs through the design of the lattice constants of a rectangular lattice, polarization beam splitters, converters and analyzers with good performance can be successfully constructed. A square lattice as well as a large incidence angle was employed to build the polarization beam splitters and converters. At an incidence angle of 80°, the polarization beam splitters can completely reflect the s-polarized light and transmit the p-polarized light in a wavelength region of 510-620 nm. For a circularly polarized light incident on the polarization converters, one can get s-polarized light in the reflection direction and p-polarized light in the transmission direction. For the polarization beam analyzers, a rectangular lattice with deliberately chosen lattice constants was employed and the transmissivity of a linearly polarized light can be continuously adjusted from 0 to ~0.90 by simply rotating the metasurface. We revealed that the broadening of either the electric dipole resonance or the magnetic dipole resonance or both of them, which is induced by the asymmetric coupling of Si NSs, is responsible for the modification in the transmissivity spectrum of the metasurface. Our findings provide a guideline for designing photonic devices based on the metasurfaces composed of Si NSs with controllable coupling strength. PMID:27410070

  17. Commissioning of the control and data acquisition electronics for the CDF Silicon Vertex Detector

    SciTech Connect

    Tkaczyk, S.M.; Turner, K.J.; Nelson, C.A.; Shaw, T.M.; Wesson, T.R. ); Bailey, M.W.; Kruse, M.C. ); Castro, A. )

    1991-11-01

    The SVX data acquisition system includes three components: a Fastbus Sequencer, an SVX Rabbit Crate Controller and a Digitizer. These modules are integrated into the CDF DAQ system and operate the readout chips. The results of the extensive functional tests of the SVX modules are reported. We discuss the stability of the Sequencers, systematic differences between them and methods of synchronization with the Tevatron beam crossings. The Digitizer ADC calibration procedure run on the microsequencer is described. The microsequencer code used for data taking and SVX chip calibration modes is described. Measurements of the SVX data scan time are discussed.

  18. Rectified Brownian movement in molecular and cell biology

    NASA Astrophysics Data System (ADS)

    Fox, Ronald F.

    1998-02-01

    A unified model is presented for rectified Brownian movement as the mechanism for a variety of putatively chemomechanical energy conversions in molecular and cell biology. The model is established by a detailed analysis of ubiquinone transport in electron transport chains and of allosteric conformation changes in proteins. It is applied to P-type ATPase ion transporters and to a variety of rotary arm enzyme complexes. It provides a basis for the dynamics of actin-myosin cross-bridges in muscle fibers. In this model, metabolic free energy does no work directly, but instead biases boundary conditions for thermal diffusion. All work is done by thermal energy, which is harnessed at the expense of metabolic free energy through the establishment of the asymmetric boundary conditions.

  19. Quantum rectifier in a one-dimensional photonic channel

    NASA Astrophysics Data System (ADS)

    Mascarenhas, E.; Santos, M. F.; Auffèves, A.; Gerace, D.

    2016-04-01

    By using a fully quantum approach based on an input-output formulation of the stochastic Schrödinger equation, we show rectification of radiation fields in a one-dimensional waveguide doped with a pair of ideal two-level systems for three topical cases: classical driving, under the action of noise, and single-photon pulsed excitation. We show that even under the constant action of unwanted noise the device still operates effectively as an optical isolator, which is of critical importance for noise resistance. Finally, harnessing stimulated emission allows for nonreciprocal behavior for single-photon inputs, thus showing purely quantum rectification at the single-photon level. The latter is a considerable step towards the ultimate goal of devising an unconditional quantum rectifier for arbitrary quantum states.

  20. Hot electron pump: a plasmonic rectifying antenna (Presentation Recording)

    NASA Astrophysics Data System (ADS)

    Yanik, Ahmet A.; Hossain, Golam I.

    2015-09-01

    Plasmonic nanostructures have been widely explored to improve absorption efficiency of conventional solar cells, either by employing them as a light scatterer, or as a source of local field enhancement. Unavoidable ohmic loss associated with the plasmonic metal nanostructures in visible spectrum, limits the efficiency improvement of photovoltaic devices by employing this local photon density of states (LDOS) engineering approach. Instead of using plasmonic structures as efficiency improving layer, recently, there has been a growing interest in exploring plasmoinc nanoparticle as the active medium for photovoltaic device. By extracting hot electrons that are created in metallic nanoparticles in a non-radiative Landau decay of surface plasmons, many novel plasmonic photovoltaic devices have been proposed. Moreover, these hot electrons in metal nanoparticles promises high efficiency with a spectral response that is not limited by the band gap of the semiconductors (active material of conventional solar cell). In this work, we will show a novel photovoltaic configuration of plasmonic nanoparticle that acts as an antenna by capturing free space ultrahigh frequency electromagnetic wave and rectify them through an ultrafast hot electron pump and eventually inject DC current in the contact of the device. We will introduce a bottom-up quantum mechanical approach model to explain fundamental physical processes involved in this hot electron pump rectifying antenna and it's ultrafast dynamics. Our model is based on non-equilibrium Green's function formalism, a robust theoretical framework to investigate transport and design nanoscale electronic devices. We will demonstrate some fundamental limitations that go the very foundations of quantum mechanics.

  1. Single-molecule designs for electric switches and rectifiers.

    PubMed

    Kornilovitch, Pavel; Bratkovsky, Alexander; Williams, Stanley

    2003-12-01

    A design for molecular rectifiers is proposed. Current rectification is based on the spatial asymmetry of a molecule and requires only one resonant conducting molecular orbital. Rectification is caused by asymmetric coupling of the orbital to the electrodes, which results in asymmetric movement of the two Fermi levels with respect to the orbital under external bias. Results from numerical studies of the family of suggested molecular rectifiers, HS-(CH(2))(n)-C(6)H(4)(CH(2))(m)SH, are presented. Current rectification ratios in excess of 100 are achievable for n = 2 and m > 6. A class of bistable stator-rotor molecules is proposed. The stationary part connects the two electrodes and facilitates electron transport between them. The rotary part, which has a large dipole moment, is attached to an atom of the stator via a single sigma bond. Electrostatic bonds formed between the oxygen atom of the rotor and hydrogen atoms of the stator make the symmetric orientation of the dipole unstable. The rotor has two potential minima with equal energy for rotation about the sigma bond. The dipole can be flipped between the two states by an external electric field. Both rotor-orientation states have asymmetric current-voltage characteristics that are the reverse of each other, so they are distinguishable electrically. Theoretical results on conformation, energy barriers, retention times, switching voltages, and current-voltage characteristics are presented for a particular stator-rotor molecule. Such molecules could be the base for single-molecule switches, reversible diodes, and other molecular electronic devices.

  2. Inward rectifying potassium channels facilitate cell-to-cell communication in hamster retractor muscle feed arteries.

    PubMed

    Jantzi, Micaela C; Brett, Suzanne E; Jackson, William F; Corteling, Randolph; Vigmond, Edward J; Welsh, Donald G

    2006-09-01

    This study examined whether inward rectifying K+ (KIR) channels facilitate cell-to-cell communication along skeletal muscle resistance arteries. With the use of feed arteries from the hamster retractor muscle, experiments examined whether KIR channels were functionally expressed and whether channel blockade attenuated the conduction of acetylcholine-induced vasodilation, an index of cell-to-cell communication. Consistent with KIR channel expression, this study observed the following: 1) a sustained Ba2+-sensitive, K+-induced dilation in preconstricted arteries; 2) a Ba2+-sensitive inwardly rectifying K+ current in arterial smooth muscle cells; and 3) KIR2.1 and KIR2.2 expression in the smooth muscle layer of these arteries. It was subsequently shown that the discrete application of acetylcholine elicits a vasodilation that conducts with limited decay along the feed artery wall. In the presence of 100 microM Ba2+, the local and conducted response to acetylcholine was attenuated, a finding consistent with a role for KIR in facilitating cell-to-cell communication. A computational model of vascular communication accurately predicted these observations. Control experiments revealed that in contrast to Ba2+, ATP-sensitive- and large-conductance Ca2+ activated-K+ channel inhibitors had no effect on the local or conducted vasodilatory response to acetylcholine. We conclude that smooth muscle KIR channels play a key role in facilitating cell-to-cell communication along skeletal muscle resistance arteries. We attribute this facilitation to the intrinsic property of negative slope conductance, a biophysical feature common to KIR2.1- and 2.2-containing channels, which enables them to increase their activity as a cell hyperpolarizes. PMID:16617135

  3. Effects of trimebutine maleate on delayed rectifier K+ currents in guinea-pig ventricular myocytes.

    PubMed

    Morisawa, T; Hasegawa, J; Tanabe, K; Watanabe, A; Kitano, M; Kishimoto, Y

    2000-04-01

    The effects of trimebutine maleate, a drug commonly used to regulate motility in the gastrointestinal tract, on the delayed rectifier K+ current (I(K)) were evaluated in guinea-pig ventricular myocytes to determine whether the drug has a proarrhythmic effect through blockade of I(K). Trimebutine decreased I(K) in a concentration-dependent manner. To investigate the effects of trimebutine on two components of I(K) (I(Kr) and I(Ks); rapidly activated and slowly activated components, respectively), we performed the envelope-of-tails test. Trimebutine-sensitive I(K) was determined by digital subtraction of I(K) during exposure to trimebutine from control I(K) for each duration of the test pulse over the range 50 ms-2 s. The ratio of deltaI(K,tail)/deltaI(K) plotted against pulse duration for trimebutine-sensitive I(K) gradually decreased to a steady-state value as the duration of the test pulse was lengthened. This finding suggested a weak inhibitory effect of trimebutine on both I(Kr) and I(Ks). The effects of trimebutine on the inward rectifier K+ current (I(K1)) responsible for the resting potential and final repolarization phase of the action potential were investigated by applying voltage clamp ramps over a broad range of potentials. No significant effects were observed at 10 or 100 microM. We next investigated the effects of the drug on the L-type Ca2+ current (I(Ca)). Significant inhibition of I(Ca) was observed at trimebutine concentrations greater than 10 microM. These results suggested that trimebutine maleate has weak inhibitory effects on I(Kr), I(Ks) and I(Ca) at concentrations much higher than those in clinical use. PMID:10813550

  4. Control of the micrometric scale morphology of silicon nanowires through ion irradiation-induced metal dewetting

    NASA Astrophysics Data System (ADS)

    Lo Savio, R.; Repetto, L.; Guida, P.; Angeli, E.; Firpo, G.; Volpe, A.; Ierardi, V.; Valbusa, U.

    2016-08-01

    We propose ion-induced dewetting of Au thin films as a mechanism to modify and control the morphology of Si nanowires formed through metal-assisted chemical etching. We show that the patterns formed upon irradiation resemble those typical of dewetting phenomena, with a characteristic length in the nanometer range. Irradiated Au films are then used as a template for the fabrication of Si nanowires, and we show that a long-range order exists also in etched substrates, although at much longer length scales in the micrometer range. Investigation of the optical properties reveals that the Si nanowires emit broadband photoluminescence peaked at 700 nm. The proposed synthesis method allows tuning the morphological features of the nanowire bundles at the nanoscale without affecting the optical properties. This approach can be exploited for the engineering of nanowires-based devices where the morphological features become important.

  5. Silicon Control of Strontium and Cesium Partitioning in Hydroxide-Weathered Sediments

    SciTech Connect

    Chorover, Jon; Choi, Sunkyung; Rotenberg, P.; Serne, R. Jeffrey; Rivera, Nelson; Strepka, Caleb R.; Thompson, Aaron; Mueller, Karl T.; O'Day, Peggy A.

    2008-04-15

    Cation partitioning in an aqueous soil suspension depends on the coupling of reaction time, sorbate amount and mineral weathering reactions. These factors were varied in sediment suspension experiments to identify geochemical processes that affect migration of Sr2+ and Cs+ introduced to the subsurface by caustic high level radioactive waste (HLRW). Three glacio-fluvial and lacustrine sediments from the Hanford Site were subjected to hyperalkaline (pH > 13), Na–Al–NO3–OH solution conditions within a gradient field of (i) sorptive concentration (10-5–10-3 M) and (ii) reaction time (0–365 d). Strontium uptake (qSr) exceeded that of cesium at nearly all reaction times. Sorbent affinity for both Cs+ and Sr2+ increased with clay plus silt content at early times, but a prolonged slow uptake process was observed over the course of sediment weathering that erased the texture effect for Sr2+; all sediments showed similar mass normalized uptake after several months of reaction time. Strontium became progressively recalcitrant to desorption after 92 d, with accumulation and aging of neoformed aluminosilicates. Formation of Cs+ and Sr2+-containing cancrinite and sodalite was observed after 183 d by SEM and synchrotron u-XRF and u-XRD. EXAFS data showed ncorporation of Sr2+ into both feldspathoid and SrCO3(s) coordination environments after one year. Adsorption was predominant at early times and low sorbate amount, whereas recipitation, controlled largely by sediment Si release, became increasingly important at longer times and higher sorbate amount. Kinetics of contaminant desorption at pH 8 from one year-weathered sediments showed significant dependence on background cation (Ca2+ versus K+) composition. Results of this study indicate that co-precipitation and ion exchange in neoformed aluminosilicates may be an important mechanism controlling Sr2+ and Cs+ mobility in siliceous sediments impacted by hyperalkaline HLRW.

  6. Iodine 125 Brachytherapy With Vitrectomy and Silicone Oil in the Treatment of Uveal Melanoma: 1-to-1 Matched Case-Control Series

    SciTech Connect

    McCannel, Tara A. McCannel, Colin A.

    2014-06-01

    Purpose: We initially reported the radiation-attenuating effect of silicone oil 1000 centistokes for iodine 125. The purpose of this report was to compare the clinical outcomes in case patients who had iodine 125 brachytherapy with vitrectomy and silicone oil 1000 centistokes with the outcomes in matched control patients who underwent brachytherapy alone. Methods and Materials: Consecutive patients with uveal melanoma who were treated with iodine 125 plaque brachytherapy and vitrectomy with silicone oil with minimum 1-year follow-up were included. Control patients who underwent brachytherapy alone were matched for tumor size, location, and sex. Baseline patient and tumor characteristics and tumor response to radiation, final visual acuity, macular status, central macular thickness by ocular coherence tomography (OCT), cataract progression, and metastasis at last follow-up visit were compared. Surgical complications were also determined. Results: Twenty case patients met the inclusion criteria. The average follow-up time was 22.1 months in case patients and 19.4 months in control patients. The final logMAR vision was 0.81 in case patients and 1.1 in control patients (P=.071); 8 case patients and 16 control patients had abnormal macular findings (P=.011); and the average central macular thickness by OCT was 293.2 μm in case patients and 408.5 μm in control patients (P=.016). Eleven case patients (55%) and 1 control patient (5%) had required cataract surgery at last follow-up (P=.002). Four patients in the case group and 1 patient in the control group experienced metastasis (P=.18). Among the cases, intraoperative retinal tear occurred in 3 patients; total serous retinal detachment and macular hole developed in 1 case patient each. There was no case of rhegmatogenous retinal detachment, treatment failure, or local tumor dissemination in case patients or control patients. Conclusions: With up to 3 years of clinical follow-up, silicone oil during brachytherapy

  7. D0 Silicon Upgrade: Control Dewar Venturi Calibration Explanation for Toshiba

    SciTech Connect

    Kuwazaki, Andrew; /Fermilab

    1997-01-24

    This document is intended to explain the calibration data for the venturi, FE-3253H, which is installed in the control dewar. Further, this document will help explain how to use the venturi to make mass flow measurements during typical operating conditions. The purpose of the calibration data enclosed from the Colorado Engineering Experiment Station Inc. is to experimentally show that the venturi follows the flow equation which is enclosed as Eq. 7-36 on page 155, from the Applied Fluid Dynamics Handbook. The calibration data serves to show that the Subsonic Venturi, Serial Number 611980-18, produces results predicted by the compressible subsonic flow mass flow rate equation above and to experimentally determine the discharge coefficient C. Colorado Engineering Experiment Station Inc. ran tests at 15 independent differential pressures to conclude that use of this venturi will perform according to the mass flow rate equation. In order to verify the results from the Colorado Engineering Experiment Station Inc. we have provided you with a step-by-step procedure using the values they have chosen.

  8. Composition Comprising Silicon Carbide

    NASA Technical Reports Server (NTRS)

    Mehregany, Mehran (Inventor); Zorman, Christian A. (Inventor); Fu, Xiao-An (Inventor); Dunning, Jeremy L. (Inventor)

    2012-01-01

    A method of depositing a ceramic film, particularly a silicon carbide film, on a substrate is disclosed in which the residual stress, residual stress gradient, and resistivity are controlled. Also disclosed are substrates having a deposited film with these controlled properties and devices, particularly MEMS and NEMS devices, having substrates with films having these properties.

  9. Controlled Directional Motions of Molecular Vehicles, Rotors, and Motors: From Metallic to Silicon Surfaces, a Strategy to Operate at Higher Temperatures.

    PubMed

    Chérioux, Frédéric; Galangau, Olivier; Palmino, Frank; Rapenne, Gwénaël

    2016-06-17

    In the last decade, many nanomachines with controlled molecular motions have been studied, mainly on metallic surfaces, which are easy to obtain very clean, and are stable over months. However, the studies of mechanical properties of nanomachines are mainly performed at very low temperatures, usually between 5 and 80 K, which prevents any kind of applications. In this Minireview, we will present our strategy to operate at higher temperatures, in particular through the use of semiconducting silicon surfaces. We also review our best achievements in the field through some examples of rotating molecular machines that have been designed, synthesized, and studied in our groups. On metallic surfaces, the nanovehicles are molecules with two or four triptycenes as wheels and the molecular motor is built around a ruthenium organometallic center with a piano-stool geometry and peripheric ferrocenyl groups. On semiconducting silicon surfaces, vehicles are also made from triptycene fragments and the rotor is a pentaphenylbenzene molecule.

  10. Direct Production of Silicones From Sand

    SciTech Connect

    Larry N. Lewis; F.J. Schattenmann: J.P. Lemmon

    2001-09-30

    Silicon, in the form of silica and silicates, is the second most abundant element in the earth's crust. However the synthesis of silicones (scheme 1) and almost all organosilicon chemistry is only accessible through elemental silicon. Silicon dioxide (sand or quartz) is converted to chemical-grade elemental silicon in an energy intensive reduction process, a result of the exceptional thermodynamic stability of silica. Then, the silicon is reacted with methyl chloride to give a mixture of methylchlorosilanes catalyzed by cooper containing a variety of tract metals such as tin, zinc etc. The so-called direct process was first discovered at GE in 1940. The methylchlorosilanes are distilled to purify and separate the major reaction components, the most important of which is dimethyldichlorosilane. Polymerization of dimethyldichlorosilane by controlled hydrolysis results in the formation of silicone polymers. Worldwide, the silicones industry produces about 1.3 billion pounds of the basic silicon polymer, polydimethylsiloxane.

  11. Rectifying Properties of a Nitrogen/Boron-Doped Capped-Carbon-Nanotube-Based Molecular Junction

    NASA Astrophysics Data System (ADS)

    Zhao, Peng; Liu, De-Sheng; Zhang, Ying; Wang, Pei-Ji; Zhang, Zhong

    2011-04-01

    Based on the non-equilibrium Green's function method and first-principles density functional theory calculations, we investigate the electronic transport properties of a nitrogen/boron-doped capped-single-walled carbon-nanotube-based molecular junction. Obvious rectifying behavior is observed and it is strongly dependent on the doping site. The best rectifying performance can be carried out when the nitrogen/boron atom dopes at a carbon site in the second layer. Moreover, the rectifying performance can be further improved by adjusting the distance between the C60 nanotube caps.

  12. Tunable all-optical plasmonic rectifier in nanoscale metal-insulator-metal waveguides.

    PubMed

    Xu, Yi; Wang, Xiaomeng; Deng, Haidong; Guo, Kangxian

    2014-10-15

    We propose a tunable all-optical plasmonic rectifier based on the nonlinear Fano resonance in a metal-insulator-metal plasmonic waveguide and cavities coupling system. We develop a theoretical model based on the temporal coupled-mode theory to study the device physics of the nanoscale rectifier. We further demonstrate via the finite difference time domain numerical experiment that our idea can be realized in a plasmonic system with an ultracompact size of ~120×800  nm². The tunable plasmonic rectifier could facilitate the all-optical signal processing in nanoscale.

  13. Reversible Cycling of Silicon and Silicon Alloys

    NASA Astrophysics Data System (ADS)

    Obrovac, Mark

    2012-02-01

    Lithium ion batteries typically use a graphite negative electrode. Silicon can store more lithium than any other element and has long been considered as an attractive replacement for graphite. The theoretical lithium storage capacity of silicon is nearly ten times higher than graphite volumetrically and three times higher gravimetrically. The equilibrium Si-Li binary system is well known. Completely new phase behaviors are observed at room temperature. This includes the formation of a new phase, Li15Si4, which is the highest lithium containing phase at room temperature [1]. The formation of Li15Si4 is accompanied by a 280 percent volume expansion of silicon. During de-alloying this phase contracts, forming amorphous silicon. The volume expansion of alloys can cause intra-particle fracture and inter-particle disconnection; leading to loss of cycle life. To overcome issues with volume expansion requires a detailed knowledge of Li-Si phase behavior, careful design of the composition and nanostructure of the alloy and the microstructure of the negative electrode [2]. In this presentation the phase behavior of the Li-Si system will be described. Using this knowledge alone, strategies can be developed so that silicon can be reversibly cycled in a battery hundreds of times. Further increases in energy density and efficiency can be gained by alloying silicon with other elements, while controlling microstructure [2]. Coupled with negative electrode design strategies, practical negative electrodes for lithium ion cells can be developed based on bulk materials, with significant energy density improvement over conventional electrodes. [4pt] [1] M.N. Obrovac and L.J. Krause, J. Electrochem. Soc., 154 (2007) A103. [0pt] [2] M.N. Obrovac, Leif Christensen, Dinh Ba Le, and J.R. Dahn, J. Electrochem. Soc., 154 (2007) A849

  14. Analysis of three-phase rectifiers with AC-side switches and interleaved three-phase voltage-source converters

    NASA Astrophysics Data System (ADS)

    Miller, Stephanie Katherine Teixeira

    Of all the alternative and renewable energy sources, wind power is the fastest growing alternative energy source with a total worldwide capacity of over 93 GW as of the end of 2007. However, making wind energy a sustainable and reliable source of electricity doesn't come without its set of challenges. As the wind turbines increase in size and turbine technology moves towards off-shore wind farms and direct drive transmission, the need for a reliable and efficient power electronics interface to convert the variable-frequency variable-magnitude output of the wind turbine's generator into the fixed-frequency fixed-magnitude voltage of the utility grid is critical. This dissertation investigates a power electronics interface envisioned to operate with an induction generator-based variable-speed wind turbine. The research conclusions and the interface itself are applicable to a variety of applications, including uninterruptible power supplies, industrial drives, and power quality applications, among others. The three-phase PWM rectifiers with ac-side bidirectional switches are proposed as the rectification stage of the power electronics interface. Modulation strategies are proposed for the rectifiers and the operation of the rectifiers in conjunction with an induction generator is demonstrated. The viability of using these rectifiers in place of the standard three-phase voltage-source converter is analyzed by comparing losses and common-mode voltage generation of the two topologies. Parallel three-phase voltage-source converter modules operated in an interleaved fashion are proposed for the inversion stage of the power electronics interface. The interleaved three-phase voltage-source converters are analyzed by deriving analytical models for the common-mode voltage, ac phase current, and dc-link current to reveal their spectra and the harmonic cancellation effects of interleaving. The practical problem of low frequency circulating current in parallel voltage

  15. An RF energy harvester system using UHF micropower CMOS rectifier based on a diode connected CMOS transistor.

    PubMed

    Shokrani, Mohammad Reza; Khoddam, Mojtaba; Hamidon, Mohd Nizar B; Kamsani, Noor Ain; Rokhani, Fakhrul Zaman; Shafie, Suhaidi Bin

    2014-01-01

    This paper presents a new type diode connected MOS transistor to improve CMOS conventional rectifier's performance in RF energy harvester systems for wireless sensor networks in which the circuits are designed in 0.18  μm TSMC CMOS technology. The proposed diode connected MOS transistor uses a new bulk connection which leads to reduction in the threshold voltage and leakage current; therefore, it contributes to increment of the rectifier's output voltage, output current, and efficiency when it is well important in the conventional CMOS rectifiers. The design technique for the rectifiers is explained and a matching network has been proposed to increase the sensitivity of the proposed rectifier. Five-stage rectifier with a matching network is proposed based on the optimization. The simulation results shows 18.2% improvement in the efficiency of the rectifier circuit and increase in sensitivity of RF energy harvester circuit. All circuits are designed in 0.18 μm TSMC CMOS technology.

  16. Preventing Freezeup in Silicon Ribbon Growth

    NASA Technical Reports Server (NTRS)

    Mackintosh, B.

    1983-01-01

    Carefully-shaped heat conductor helps control thermal gradients crucial to growth of single-crystal silicon sheets for solar cells. Ends of die through which silicon sheet is drawn as ribbon from molten silicon. Profiled heat extractor prevents ribbon ends from solidifying prematurely and breaking.

  17. Graphene ballistic nano-rectifier with very high responsivity.

    PubMed

    Auton, Gregory; Zhang, Jiawei; Kumar, Roshan Krishna; Wang, Hanbin; Zhang, Xijian; Wang, Qingpu; Hill, Ernie; Song, Aimin

    2016-05-31

    Although graphene has the longest mean free path of carriers of any known electronic material, very few novel devices have been reported to harness this extraordinary property. Here we demonstrate a ballistic nano-rectifier fabricated by creating an asymmetric cross-junction in single-layer graphene sandwiched between boron nitride flakes. A mobility ∼200,000 cm(2) V(-1) s(-1) is achieved at room temperature, well beyond that required for ballistic transport. This enables a voltage responsivity as high as 23,000 mV mW(-1) with a low-frequency input signal. Taking advantage of the output channels being orthogonal to the input terminals, the noise is found to be not strongly influenced by the input. Hence, the corresponding noise-equivalent power is as low as 0.64 pW Hz(-1/2). Such performance is even comparable to superconducting bolometers, which however need to operate at cryogenic temperatures. Furthermore, output oscillations are observed at low temperatures, the period of which agrees with the lateral size quantization.

  18. Finite element modeling of electrically rectified piezoelectric energy harvesters

    NASA Astrophysics Data System (ADS)

    Wu, P. H.; Shu, Y. C.

    2015-09-01

    Finite element models are developed for designing electrically rectified piezoelectric energy harvesters. They account for the consideration of common interface circuits such as the standard and parallel-/series-SSHI (synchronized switch harvesting on inductor) circuits, as well as complicated structural configurations such as arrays of piezoelectric oscillators. The idea is to replace the energy harvesting circuit by the proposed equivalent load impedance together with the capacitance of negative value. As a result, the proposed framework is capable of being implemented into conventional finite element solvers for direct system-level design without resorting to circuit simulators. The validation based on COMSOL simulations carried out for various interface circuits by the comparison with the standard modal analysis model. The framework is then applied to the investigation on how harvested power is reduced due to fabrication deviations in geometric and material properties of oscillators in an array system. Remarkably, it is found that for a standard array system with strong electromechanical coupling, the drop in peak power turns out to be insignificant if the optimal load is carefully chosen. The second application is to design broadband energy harvesting by developing array systems with suitable interface circuits. The result shows that significant broadband is observed for the parallel (series) connection of oscillators endowed with the parallel-SSHI (series-SSHI) circuit technique.

  19. Remote Electrical Stimulation by Means of Implanted Rectifiers

    PubMed Central

    Ivorra, Antoni

    2011-01-01

    Miniaturization of active implantable medical devices is currently compromised by the available means for electrically powering them. Most common energy supply techniques for implants – batteries and inductive couplers – comprise bulky parts which, in most cases, are significantly larger than the circuitry they feed. Here, for overcoming such miniaturization bottleneck in the case of implants for electrical stimulation, it is proposed to make those implants act as rectifiers of high frequency bursts supplied by remote electrodes. In this way, low frequency currents will be generated locally around the implant and these low frequency currents will perform stimulation of excitable tissues whereas the high frequency currents will cause only innocuous heating. The present study numerically demonstrates that low frequency currents capable of stimulation can be produced by a miniature device behaving as a diode when high frequency currents, neither capable of thermal damage nor of stimulation, flow through the tissue where the device is implanted. Moreover, experimental evidence is provided by an in vivo proof of concept model consisting of an anesthetized earthworm in which a commercial diode was implanted. With currently available microelectronic techniques, very thin stimulation capsules (diameter <500 µm) deliverable by injection are easily conceivable. PMID:21850274

  20. Bubble growth by rectified diffusion at high gas supersaturation levels.

    PubMed

    Ilinskii, Yurii A; Wilson, Preston S; Hamilton, Mark F

    2008-10-01

    For high gas supersaturation levels in liquids, on the order of 300% as predicted in capillaries of marine mammals following a series of dives [D. S. Houser, R. Howard, and S. Ridgway, J. Theor. Biol. 213, 183-195 (2001)], standard mathematical models of both static and rectified diffusion are found to underestimate the rate of bubble growth by 10%-20%. The discrepancy is demonstrated by comparing predictions based on existing mathematical models with direct numerical solutions of the differential equations for gas diffusion in the liquid and thermal conditions in the bubble. Underestimation of bubble growth by existing mathematical models is due to the underlying assumption that the gas concentration in the liquid is given by its value for a bubble of constant equilibrium radius. This assumption is violated when high supersaturation causes the bubble to grow too fast in relation to the time scale associated with diffusion. Rapid bubble growth results in an increased gas concentration gradient at the bubble wall and therefore a growth rate in excess of predictions based on constant equilibrium bubble radius.

  1. Remote electrical stimulation by means of implanted rectifiers.

    PubMed

    Ivorra, Antoni

    2011-01-01

    Miniaturization of active implantable medical devices is currently compromised by the available means for electrically powering them. Most common energy supply techniques for implants--batteries and inductive couplers--comprise bulky parts which, in most cases, are significantly larger than the circuitry they feed. Here, for overcoming such miniaturization bottleneck in the case of implants for electrical stimulation, it is proposed to make those implants act as rectifiers of high frequency bursts supplied by remote electrodes. In this way, low frequency currents will be generated locally around the implant and these low frequency currents will perform stimulation of excitable tissues whereas the high frequency currents will cause only innocuous heating. The present study numerically demonstrates that low frequency currents capable of stimulation can be produced by a miniature device behaving as a diode when high frequency currents, neither capable of thermal damage nor of stimulation, flow through the tissue where the device is implanted. Moreover, experimental evidence is provided by an in vivo proof of concept model consisting of an anesthetized earthworm in which a commercial diode was implanted. With currently available microelectronic techniques, very thin stimulation capsules (diameter <500 µm) deliverable by injection are easily conceivable. PMID:21850274

  2. Graphene ballistic nano-rectifier with very high responsivity

    PubMed Central

    Auton, Gregory; Zhang, Jiawei; Kumar, Roshan Krishna; Wang, Hanbin; Zhang, Xijian; Wang, Qingpu; Hill, Ernie; Song, Aimin

    2016-01-01

    Although graphene has the longest mean free path of carriers of any known electronic material, very few novel devices have been reported to harness this extraordinary property. Here we demonstrate a ballistic nano-rectifier fabricated by creating an asymmetric cross-junction in single-layer graphene sandwiched between boron nitride flakes. A mobility ∼200,000 cm2 V−1 s−1 is achieved at room temperature, well beyond that required for ballistic transport. This enables a voltage responsivity as high as 23,000 mV mW−1 with a low-frequency input signal. Taking advantage of the output channels being orthogonal to the input terminals, the noise is found to be not strongly influenced by the input. Hence, the corresponding noise-equivalent power is as low as 0.64 pW Hz−1/2. Such performance is even comparable to superconducting bolometers, which however need to operate at cryogenic temperatures. Furthermore, output oscillations are observed at low temperatures, the period of which agrees with the lateral size quantization. PMID:27241162

  3. Graphene ballistic nano-rectifier with very high responsivity

    NASA Astrophysics Data System (ADS)

    Auton, Gregory; Zhang, Jiawei; Kumar, Roshan Krishna; Wang, Hanbin; Zhang, Xijian; Wang, Qingpu; Hill, Ernie; Song, Aimin

    2016-05-01

    Although graphene has the longest mean free path of carriers of any known electronic material, very few novel devices have been reported to harness this extraordinary property. Here we demonstrate a ballistic nano-rectifier fabricated by creating an asymmetric cross-junction in single-layer graphene sandwiched between boron nitride flakes. A mobility ~200,000 cm2 V-1 s-1 is achieved at room temperature, well beyond that required for ballistic transport. This enables a voltage responsivity as high as 23,000 mV mW-1 with a low-frequency input signal. Taking advantage of the output channels being orthogonal to the input terminals, the noise is found to be not strongly influenced by the input. Hence, the corresponding noise-equivalent power is as low as 0.64 pW Hz-1/2. Such performance is even comparable to superconducting bolometers, which however need to operate at cryogenic temperatures. Furthermore, output oscillations are observed at low temperatures, the period of which agrees with the lateral size quantization.

  4. Bubble growth by rectified diffusion at high gas supersaturation levels.

    PubMed

    Ilinskii, Yurii A; Wilson, Preston S; Hamilton, Mark F

    2008-10-01

    For high gas supersaturation levels in liquids, on the order of 300% as predicted in capillaries of marine mammals following a series of dives [D. S. Houser, R. Howard, and S. Ridgway, J. Theor. Biol. 213, 183-195 (2001)], standard mathematical models of both static and rectified diffusion are found to underestimate the rate of bubble growth by 10%-20%. The discrepancy is demonstrated by comparing predictions based on existing mathematical models with direct numerical solutions of the differential equations for gas diffusion in the liquid and thermal conditions in the bubble. Underestimation of bubble growth by existing mathematical models is due to the underlying assumption that the gas concentration in the liquid is given by its value for a bubble of constant equilibrium radius. This assumption is violated when high supersaturation causes the bubble to grow too fast in relation to the time scale associated with diffusion. Rapid bubble growth results in an increased gas concentration gradient at the bubble wall and therefore a growth rate in excess of predictions based on constant equilibrium bubble radius. PMID:19062834

  5. Mitigating impact of rectified RF sheath potential on the ELMs

    NASA Astrophysics Data System (ADS)

    Gui, Bin; Xu, Xueqiao; Xia, Tianyang

    2014-10-01

    Here we report on the BOUT++ simulation results for the mitigating impact of rectified RF sheath potential on the peeling-ballooning modes. The limiter and the RF wave antenna are placed at the outer middle plane in the scrape-off-layer (SOL) in shift-circle geometry. The external shear flow is induced by the limiter and the RF wave. Besides this, the sheath boundary conditions are imposed on the perturbed potential and parallel current. From the three-field simulations, it is found that the energy loss is suppressed by the external shear flow in the nonlinear phase. The external shear flow due to the RF wave leads to a broad turbulence spectrum. The wider spectrum leads to a weaker turbulence transport and results in a smaller energy loss. The perturbed electric potential and the parallel current near the sheath region are also suppressed locally due to the sheath boundary condition. Based on this work, this effect of limiter will also be applied in six-field which includes more physics effects. The effect of sheath boundary conditions on the thermal conductivities and heat flux will be studied. This work was performed for USDOE by LLNL under DE-AC52-07NA27344, LLNL LDRD project 12-ERD-022 and the China Natural Science Foundation under Contract No. 10721505. LLNL-ABS-657008.

  6. Rectified Continuous Flow Loop for the Thermal Management of Large Structures

    NASA Astrophysics Data System (ADS)

    Skye, H. M.; Hoch, D. W.; Nellis, G. F.; Maddocks, J. R.; Klein, S. A.; Roberts, T.; Davis, T.

    2006-04-01

    Distributed loads are frequently encountered in large deployable structures used in space applications such as optical mirrors, actively cooled sunshades, and on focal plane electronics. One mechanism for providing distributed cooling is via an oscillatory cryocooler such as a pulse-tube that is integrated with a fluid rectification system consisting of check-valves and buffer volumes in order to extract a small amount of continuous flow. This continuous flow allows relatively large loads to be accepted over a long distance with a small temperature difference and has advantages relative to vibration and electrical isolation. Also, it is possible to provide rapid and precise temperature control via modulation of the flow rate. The same working fluid, helium, can be used throughout the entire system, reducing complexity and simplifying the contamination control process. This paper describes steady state and transient modeling results and presents experimental data for a single-stage pulse tube with a rectifying interface that is integrated with a distributed load. The predicted and measured steady state and transient behaviors are compared. The experimental data are used to demonstrate the thermal management concept and illustrate how it can be used for rapid and precise temperature control.

  7. Double-plasma enhanced carbon shield for spatial/interfacial controlled electrodes in lithium ion batteries via micro-sized silicon from wafer waste

    NASA Astrophysics Data System (ADS)

    Chen, Bing-Hong; Chuang, Shang-I.; Duh, Jenq-Gong

    2016-11-01

    Using spatial and interfacial control, the micro-sized silicon waste from wafer slurry could greatly increase its retention potential as a green resource for silicon-based anode in lithium ion batteries. Through step by step spatial and interfacial control for electrode, the cyclability of recycled waste gains potential performance from its original poor retention property. In the stages of spatial control, the electrode stabilizers of active, inactive and conductive additives were mixed into slurries for maintaining architecture and conductivity of electrode. In addition, a fusion electrode modification of interfacial control combines electrolyte additive, technique of double-plasma enhanced carbon shield (D-PECS) to convert the chemical bond states and to alter the formation of solid electrolyte interphases (SEIs) in the first cycle. The depth profiles of chemical composition from external into internal electrode illustrate that the fusion electrode modification not only forms a boundary to balance the interface between internal and external electrodes but also stabilizes the SEIs formation and soothe the expansion of micro-sized electrode. Through these effect approaches, the performance of micro-sized Si waste electrode can be boosted from its serious capacity degradation to potential retention (200 cycles, 1100 mAh/g) and better meet the requirements for facile and cost-effective in industrial production.

  8. Design and test of a 2.25-MW transformer rectifier assembly

    NASA Technical Reports Server (NTRS)

    Cormier, R.; Daeges, J.

    1989-01-01

    A new 2.25-MW transformer rectifier assembly was fabricated for DSS-13 at Goldstone, California. The transformer rectifier will provide constant output power of 2.25 MW at any voltage from 31 kV to 125 kV. This will give a new capability of 1 MW of RF power at X-band, provided appropriate microwave tubes are in the power amplifier. A description of the design and test results is presented.

  9. New Analysis and Design of a RF Rectifier for RFID and Implantable Devices

    PubMed Central

    Liu, Dong-Sheng; Li, Feng-Bo; Zou, Xue-Cheng; Liu, Yao; Hui, Xue-Mei; Tao, Xiong-Fei

    2011-01-01

    New design and optimization of charge pump rectifiers using diode-connected MOS transistors is presented in this paper. An analysis of the output voltage and Power Conversion Efficiency (PCE) is given to guide and evaluate the new design. A novel diode-connected MOS transistor for UHF rectifiers is presented and optimized, and a high efficiency N-stage charge pump rectifier based on this new diode-connected MOS transistor is designed and fabricated in a SMIC 0.18-μm 2P3M CMOS embedded EEPROM process. The new diode achieves 315 mV turn-on voltage and 415 nA reverse saturation leakage current. Compared with the traditional rectifier, the one based on the proposed diode-connected MOS has higher PCE, higher output voltage and smaller ripple coefficient. When the RF input is a 900-MHz sinusoid signal with the power ranging from −15 dBm to −4 dBm, PCEs of the charge pump rectifier with only 3-stage are more than 30%, and the maximum output voltage is 5.5 V, and its ripple coefficients are less than 1%. Therefore, the rectifier is especially suitableto passive UHF RFID tag IC and implantable devices. PMID:22163968

  10. Innovative Switching Sequences for Sensorless Capacitor Voltage Balancing of Three-Phase NPC Rectifier

    NASA Astrophysics Data System (ADS)

    Langer, Nitin; Bhat, Abdul Hamid; Agarwal, Pramod

    2014-01-01

    This paper presents a modulation strategy for self-balancing of capacitor voltages of three-phase neutral-point clamped bi-directional rectifier (without feedback controller and sensors). It is identified that regions within a sector are divided into two categories: (a) One small vector among three selected vectors and (b) Two small vectors among three selected vectors. For category (a) positive and negative commutation state of small vector is implemented for equal duty cycle but for category (b) positive and negative commutation state of small vectors is implemented for unequal duty cycle. Based on this observation, an innovative idea is executed to remove these discrepancies. The innovative optimized space vector switching sequences negative and positive commutation state of both the small vectors are implemented for equal duty cycle during each sampling period resulting in self-balancing of DC-bus capacitors with much reduced ripples under steady-state and dynamic load conditions for both rectification and inversion mode of operation. The converter exhibits excellent performance in terms of other critical parameters like unity input power factor, low input current THD, minimum possible switching losses, reduced-rippled and well-regulated DC voltage. The proposed control algorithm is tested through exhaustive simulation of converter using MATLAB Simulink software.

  11. Operational research on a high-T c rectifier-type superconducting flux pump

    NASA Astrophysics Data System (ADS)

    Geng, Jianzhao; Matsuda, K.; Fu, Lin; Shen, Boyang; Zhang, Xiuchang; Coombs, T. A.

    2016-03-01

    High-T c superconducting (HTS) flux pumps are capable of injecting flux into a superconducting circuit, which can achieve persistent current operation for HTS magnets. In this paper, we studied the operation of a rectifier-type HTS flux pump. The flux pump employs a transformer to generate high alternating current in its secondary winding, which is connected to an HTS load shorted by an HTS bridge. A high frequency ac field is intermittently applied perpendicular to the bridge, thus, generating flux flow. The dynamic resistance caused by the flux flow ‘rectifies’ the secondary current, resulting in a direct current in the load. We have found that the final load current can easily be controlled by changing the phase difference between the secondary current and the bridge field. The bridge field of frequency ranging from 10 to 40 Hz and magnitude ranging from 0 to 0.66 T was tested. Flux pumping was observed for field magnitudes of 50 mT or above. We have found that both higher field magnitude and higher field frequency result in a faster pumping speed and a higher final load current. This can be attributed to the influence of dynamic resistance. The dynamic resistance measured in the flux pump is comparable with the theoretical calculation. The experimental results fully support a first order circuit model. The flux pump is much more controllable than the traveling wave flux pumps based on permanent magnets, which makes it promising for practical use.

  12. Patterned porous silicon photonic crystals with modular surface chemistry for spatial control of neural stem cell differentiation

    NASA Astrophysics Data System (ADS)

    Huang, Tiffany H.; Pei, Yi; Zhang, Douglas; Li, Yanfen; Kilian, Kristopher A.

    2016-05-01

    We present a strategy to spatially define regions of gold and nanostructured silicon photonics, each with materials-specific surface chemistry, for azide-alkyne cycloaddition of different bioactive peptides. Neural stem cells are spatially directed to undergo neurogenesis and astrogenesis as a function of both surface properties and peptide identity.We present a strategy to spatially define regions of gold and nanostructured silicon photonics, each with materials-specific surface chemistry, for azide-alkyne cycloaddition of different bioactive peptides. Neural stem cells are spatially directed to undergo neurogenesis and astrogenesis as a function of both surface properties and peptide identity. Electronic supplementary information (ESI) available. See DOI: 10.1039/c5nr08327c

  13. Silicon nitride/silicon carbide composite powders

    DOEpatents

    Dunmead, Stephen D.; Weimer, Alan W.; Carroll, Daniel F.; Eisman, Glenn A.; Cochran, Gene A.; Susnitzky, David W.; Beaman, Donald R.; Nilsen, Kevin J.

    1996-06-11

    Prepare silicon nitride-silicon carbide composite powders by carbothermal reduction of crystalline silica powder, carbon powder and, optionally, crystalline silicon nitride powder. The crystalline silicon carbide portion of the composite powders has a mean number diameter less than about 700 nanometers and contains nitrogen. The composite powders may be used to prepare sintered ceramic bodies and self-reinforced silicon nitride ceramic bodies.

  14. BOREAS TE-18, 60-m, Radiometrically Rectified Landsat TM Imagery

    NASA Technical Reports Server (NTRS)

    Hall, Forrest G. (Editor); Knapp, David

    2000-01-01

    The BOREAS TE-18 team used a radiometric rectification process to produce standardized DN values for a series of Landsat TM images of the BOREAS SSA and NSA in order to compare images that were collected under different atmospheric conditions. The images for each study area were referenced to an image that had very clear atmospheric qualities. The reference image for the SSA was collected on 02-Sep-1994, while the reference image for the NSA was collected on 2 1 Jun-1995. The 23 rectified images cover the period of 07-Jul-1985 to 18-Sep-1994 in the SSA and 22-Jun-1984 to 09-Jun-1994 in the NSA. Each of the reference scenes had coincident atmospheric optical thickness measurements made by RSS-11. The radiometric rectification process is described in more detail by Hall et al. (1991). The original Landsat TM data were received from CCRS for use in the BOREAS project. Due to the nature of the radiometric rectification process and copyright issues, the full-resolution (30-m) images may not be publicly distributed. However, this spatially degraded 60-m resolution version of the images may be openly distributed and is available on the BOREAS CD-ROM series. After the radiometric rectification processing, the original data were degraded to a 60-m pixel size from the original 30-m pixel size by averaging the data over a 2- by 2-pixel window. The data are stored in binary image-format files. The data files are available on a CD-ROM (see document number 20010000884), or from the Oak Ridge National Laboratory (ORNL) Distributed Activity Archive Center (DAAC).

  15. BOREAS TE-18, 30-m, Radiometrically Rectified Landsat TM Imagery

    NASA Technical Reports Server (NTRS)

    Hall, Forrest G. (Editor); Knapp, David

    2000-01-01

    The BOREAS TE-18 team used a radiometric rectification process to produce standardized DN values for a series of Landsat TM images of the BOREAS SSA and NSA in order to compare images that were collected under different atmospheric conditions. The images for each study area were referenced to an image that had very clear atmospheric qualities. The reference image for the SSA was collected on 02-Sep-1994, while the reference image for the NSA was collected on 21-Jun-1995. the 23 rectified images cover the period of 07-Jul-1985 to 18 Sep-1994 in the SSA and from 22-Jun-1984 to 09-Jun-1994 in the NSA. Each of the reference scenes had coincident atmospheric optical thickness measurements made by RSS-11. The radiometric rectification process is described in more detail by Hall et al. (199 1). The original Landsat TM data were received from CCRS for use in the BOREAS project. The data are stored in binary image-format files. Due to the nature of the radiometric rectification process and copyright issues, these full-resolution images may not be publicly distributed. However, a spatially degraded 60-m resolution version of the images is available on the BOREAS CD-ROM series. See Sections 15 and 16 for information about how to possibly acquire the full resolution data. Information about the full-resolution images is provided in an inventory listing on the CD-ROMs. The data files are available on a CD-ROM (see document number 20010000884), or from the Oak Ridge National Laboratory (ORNL) Distributed Activity Archive Center (DAAC).

  16. Controllability of self-aligned four-terminal planar embedded metal double-gate low-temperature polycrystalline-silicon thin-film transistors on a glass substrate

    NASA Astrophysics Data System (ADS)

    Ohsawa, Hiroki; Sasaki, Shun; Hara, Akito

    2016-03-01

    Self-aligned four-terminal n-channel (n-ch) and p-channel (p-ch) planar embedded metal double-gate polycrystalline-silicon (poly-Si) thin-film transistors (TFTs) were fabricated on a glass substrate at a low temperature of 550 °C. This device includes a metal top gate (TG) and a metal bottom gate (BG), which are used as the drive and control gates or vice versa. The BG was embedded in a glass substrate, and a poly-Si channel with large lateral grains was fabricated by continuous-wave laser lateral crystallization. The threshold voltage modulation factors under various control gate voltages (γ = ΔVth/ΔVCG) were nearly equal to the theoretical predictions in both the n- and p-ch TFTs. By exploiting this high controllability, an enhancement depletion (ED) inverter was fabricated, and successful operation at 2.0 V was confirmed.

  17. A High-Throughput Electrophysiology Assay Identifies Inhibitors of the Inwardly Rectifying Potassium Channel Kir7.1.

    PubMed

    Wright, Paul D; Kanumilli, Srinivasan; Tickle, David; Cartland, Jamie; Bouloc, Nathalie; Dale, Timothy; Tresize, Derek J; McCloskey, Conor; McCavera, Samantha; Blanks, Andrew M; Kettleborough, Catherine; Jerman, Jeffrey C

    2015-07-01

    Kir7.1 is an inwardly rectifying potassium channel that has been implicated in controlling the resting membrane potential of the myometrium. Abnormal uterine activity in pregnancy plays an important role in postpartum hemorrhage, and novel therapies for this condition may lie in manipulation of membrane potential. This work presents an assay development and screening strategy for identifying novel inhibitors of Kir7.1. A cell-based automated patch-clamp electrophysiology assay was developed using the IonWorks Quattro (Molecular Devices, Sunnyvale, CA) system, and the iterative optimization is described. In total, 7087 compounds were tested, with a hit rate (>40% inhibition) of 3.09%. During screening, average Z' values of 0.63 ± 0.09 were observed. After chemistry triage, lead compounds were resynthesized and activity confirmed by IC50 determinations. The most potent compound identified (MRT00200769) gave rise to an IC50 of 1.3 µM at Kir7.1. Compounds were assessed for selectivity using the inwardly rectifying potassium channel Kir1.1 (ROMK) and hERG (human Ether-à-go-go Related Gene). Pharmacological characterization of known Kir7.1 inhibitors was also carried out and analogues of VU590 tested to assess selectivity at Kir7.1.

  18. A superconducting/magnetic hybrid rectifier based on Fe single-crystal nanocentres: role of magnetic and geometric asymmetries

    NASA Astrophysics Data System (ADS)

    Gomez, A.; Gonzalez, E. M.; Iglesias, M.; Sanchez, N.; Palomares, F. J.; Cebollada, F.; Gonzalez, J. M.; Vicent, J. L.

    2013-03-01

    Vortex lattice motion driven by alternating forces on asymmetric pinning potentials generates a net flow of vortices. This rectifier (ratchet) effect is studied in hybrid samples fabricated with arrays of Fe single-crystal nanotriangles embedded in Nb films. In these samples two different asymmetric potentials generate the ratchet effect: (i) potentials with geometric asymmetry and (ii) potentials with magnetic asymmetry. The asymmetry of the geometric potential cannot be manipulated, but the asymmetry of the magnetic potential can be tailored. In geometric ratchet interstitial vortices play a crucial role and they permit tuning the output voltage polarity. In magnetic ratchet the output voltage amplitude can be controlled by tailoring the magnetic stray field configurations due to different magnetic remanent states of the Fe single-crystal nanostructures. These configurations are modified by changing the direction of the saturating applied field and also by using different orientations of the Fe magnetocrystalline easy axes within the triangles. When both mechanisms coexist, the geometric potential governs the rectifier effect behaviour.

  19. The electrophotonic silicon biosensor

    PubMed Central

    Juan-Colás, José; Parkin, Alison; Dunn, Katherine E.; Scullion, Mark G.; Krauss, Thomas F.; Johnson, Steven D.

    2016-01-01

    The emergence of personalized and stratified medicine requires label-free, low-cost diagnostic technology capable of monitoring multiple disease biomarkers in parallel. Silicon photonic biosensors combine high-sensitivity analysis with scalable, low-cost manufacturing, but they tend to measure only a single biomarker and provide no information about their (bio)chemical activity. Here we introduce an electrochemical silicon photonic sensor capable of highly sensitive and multiparameter profiling of biomarkers. Our electrophotonic technology consists of microring resonators optimally n-doped to support high Q resonances alongside electrochemical processes in situ. The inclusion of electrochemical control enables site-selective immobilization of different biomolecules on individual microrings within a sensor array. The combination of photonic and electrochemical characterization also provides additional quantitative information and unique insight into chemical reactivity that is unavailable with photonic detection alone. By exploiting both the photonic and the electrical properties of silicon, the sensor opens new modalities for sensing on the microscale. PMID:27624590

  20. The electrophotonic silicon biosensor.

    PubMed

    Juan-Colás, José; Parkin, Alison; Dunn, Katherine E; Scullion, Mark G; Krauss, Thomas F; Johnson, Steven D

    2016-01-01

    The emergence of personalized and stratified medicine requires label-free, low-cost diagnostic technology capable of monitoring multiple disease biomarkers in parallel. Silicon photonic biosensors combine high-sensitivity analysis with scalable, low-cost manufacturing, but they tend to measure only a single biomarker and provide no information about their (bio)chemical activity. Here we introduce an electrochemical silicon photonic sensor capable of highly sensitive and multiparameter profiling of biomarkers. Our electrophotonic technology consists of microring resonators optimally n-doped to support high Q resonances alongside electrochemical processes in situ. The inclusion of electrochemical control enables site-selective immobilization of different biomolecules on individual microrings within a sensor array. The combination of photonic and electrochemical characterization also provides additional quantitative information and unique insight into chemical reactivity that is unavailable with photonic detection alone. By exploiting both the photonic and the electrical properties of silicon, the sensor opens new modalities for sensing on the microscale. PMID:27624590

  1. The electrophotonic silicon biosensor

    NASA Astrophysics Data System (ADS)

    Juan-Colás, José; Parkin, Alison; Dunn, Katherine E.; Scullion, Mark G.; Krauss, Thomas F.; Johnson, Steven D.

    2016-09-01

    The emergence of personalized and stratified medicine requires label-free, low-cost diagnostic technology capable of monitoring multiple disease biomarkers in parallel. Silicon photonic biosensors combine high-sensitivity analysis with scalable, low-cost manufacturing, but they tend to measure only a single biomarker and provide no information about their (bio)chemical activity. Here we introduce an electrochemical silicon photonic sensor capable of highly sensitive and multiparameter profiling of biomarkers. Our electrophotonic technology consists of microring resonators optimally n-doped to support high Q resonances alongside electrochemical processes in situ. The inclusion of electrochemical control enables site-selective immobilization of different biomolecules on individual microrings within a sensor array. The combination of photonic and electrochemical characterization also provides additional quantitative information and unique insight into chemical reactivity that is unavailable with photonic detection alone. By exploiting both the photonic and the electrical properties of silicon, the sensor opens new modalities for sensing on the microscale.

  2. CONDENSED MATTER: STRUCTURE, THERMAL AND MECHANICAL PROPERTIES: SiC based Si/SiC heterojunction and its rectifying characteristics

    NASA Astrophysics Data System (ADS)

    Zhu, Feng; Chen, Zhi-Ming; Li, Lian-Bi; Zhao, Shun-Feng; Lin, Tao

    2009-11-01

    The Si on SiC heterojunction is still poorly understood, although it has a number of potential applications in electronic and optoelectronic devices, for example, light-activated SiC power switches where Si may play the role of an light absorbing layer. This paper reports on Si films heteroepitaxially grown on the Si face of (0001) n-type 6H-SiC substrates and the use of B2H6 as a dopant for p-Si grown at temperatures in a range of 700-950 °C. X-ray diffraction (XRD) analysis and transmission electron microscopy (TEM) tests have demonstrated that the samples prepared at the temperatures ranged from 850 °C to 900 °C are characterized as monocrystalline silicon. The rocking XRD curves show a well symmetry with FWHM of 0.4339° Omega. Twin crystals and stacking faults observed in the epitaxial layers might be responsible for widening of the rocking curves. Dependence of the crystal structure and surface topography on growth temperature is discussed based on the experimental results. The energy band structure and rectifying characteristics of the Si/SiC heterojunctions are also preliminarily tested.

  3. Surprise signals in the supplementary eye field: rectified prediction errors drive exploration-exploitation transitions.

    PubMed

    Kawaguchi, Norihiko; Sakamoto, Kazuhiro; Saito, Naohiro; Furusawa, Yoshito; Tanji, Jun; Aoki, Masashi; Mushiake, Hajime

    2015-02-01

    Visual search is coordinated adaptively by monitoring and predicting the environment. The supplementary eye field (SEF) plays a role in oculomotor control and outcome evaluation. However, it is not clear whether the SEF is involved in adjusting behavioral modes based on preceding feedback. We hypothesized that the SEF drives exploration-exploitation transitions by generating "surprise signals" or rectified prediction errors, which reflect differences between predicted and actual outcomes. To test this hypothesis, we introduced an oculomotor two-target search task in which monkeys were required to find two valid targets among four identical stimuli. After they detected the valid targets, they exploited their knowledge of target locations to obtain a reward by choosing the two valid targets alternately. Behavioral analysis revealed two distinct types of oculomotor search patterns: exploration and exploitation. We found that two types of SEF neurons represented the surprise signals. The error-surprise neurons showed enhanced activity when the monkey received the first error feedback after the target pair change, and this activity was followed by an exploratory oculomotor search pattern. The correct-surprise neurons showed enhanced activity when the monkey received the first correct feedback after an error trial, and this increased activity was followed by an exploitative, fixed-type search pattern. Our findings suggest that error-surprise neurons are involved in the transition from exploitation to exploration and that correct-surprise neurons are involved in the transition from exploration to exploitation.

  4. Interactions of cations with the cytoplasmic pores of inward rectifier K(+) channels in the closed state.

    PubMed

    Inanobe, Atsushi; Nakagawa, Atsushi; Kurachi, Yoshihisa

    2011-12-01

    Ion channels gate at membrane-embedded domains by changing their conformation along the ion conduction pathway. Inward rectifier K(+) (Kir) channels possess a unique extramembrane cytoplasmic domain that extends this pathway. However, the relevance and contribution of this domain to ion permeation remain unclear. By qualitative x-ray crystallographic analysis, we found that the pore in the cytoplasmic domain of Kir3.2 binds cations in a valency-dependent manner and does not allow the displacement of Mg(2+) by monovalent cations or spermine. Electrophysiological analyses revealed that the cytoplasmic pore of Kir3.2 selectively binds positively charged molecules and has a higher affinity for Mg(2+) when it has a low probability of being open. The selective blocking of chemical modification of the side chain of pore-facing residues by Mg(2+) indicates that the mode of binding of Mg(2+) is likely to be similar to that observed in the crystal structure. These results indicate that the Kir3.2 crystal structure has a closed conformation with a negative electrostatic field potential at the cytoplasmic pore, the potential of which may be controlled by conformational changes in the cytoplasmic domain to regulate ion diffusion along the pore. PMID:21982822

  5. Length dependence of rectification in organic co-oligomer spin rectifiers

    NASA Astrophysics Data System (ADS)

    Gui-Chao, Hu; Zhao, Zhang; Ying, Li; Jun-Feng, Ren; Chuan-Kui, Wang

    2016-05-01

    The rectification ratio of organic magnetic co-oligomer diodes is investigated theoretically by changing the molecular length. The results reveal two distinct length dependences of the rectification ratio: for a short molecular diode, the charge-current rectification changes little with the increase of molecular length, while the spin-current rectification is weakened sharply by the length; for a long molecular diode, both the charge-current and spin-current rectification ratios increase quickly with the length. The two kinds of dependence switch at a specific length accompanied with an inversion of the rectifying direction. The molecular ortibals and spin-resolved transmission analysis indicate that the dominant mechanism of rectification suffers a change at this specific length, that is, from asymmetric shift of molecular eigenlevels to asymmetric spatial localization of wave functions upon the reversal of bias. This work demonstrates a feasible way to control the rectification in organic co-oligomer spin diodes by adjusting the molecular length. Project supported by the National Natural Science Foundation of China (Grant No. 11374195), the Natural Science Foundation of Shandong Province, China (Grant No. ZR2014AM017), the Taishan Scholar Project of Shandong Province, China, and the Excellent Young Scholars Research Fund of Shandong Normal University, China.

  6. Adrenergic modulation of the delayed rectifier potassium channel in calf cardiac Purkinje fibers.

    PubMed Central

    Bennett, P; McKinney, L; Begenisich, T; Kass, R S

    1986-01-01

    We have investigated the modulation of the delayed rectifier potassium channel in calf cardiac Purkinje fibers by the neurohormone norepinephrine. We find that 0.5 microM norepinephrine increases this K channel current by a factor of 2.7. A maximal increase of about four was found for concentrations of 1 microM and above. Norepinephrine produced a small (less than 5 mV) and variable shift of the K channel reversal potential toward more negative values. The kinetics of the potassium channel are well described by a two-exponential process, both in the absence and presence of norepinephrine. However, norepinephrine substantially decreases the slower time constant with no significant effect on the fast time constant. Potassium channel activation curves in the presence of norepinephrine are very similar to control curves except at large positive potentials. A simple sequential three-state model for this channel can reproduce these data both with and without norepinephrine. The logarithms of the rate constants derived from this model are quadratic functions of voltage, suggesting the involvement of electric field-induced dipoles in the gating of this channel. Most of the kinetic effects of norepinephrine appear to be on a single rate constant. PMID:2424513

  7. A high switching frequency IGBT PWM rectifier/inverter system for ac motor drives operating from single phase supply

    NASA Astrophysics Data System (ADS)

    Thiyagarajah, K.; Ranganathan, V. T.; Ramakrishna Iyengar, B. S.

    1991-10-01

    A pulse-width-modulated (PWM) rectifier/inverter system using insulated-gate-bipolar-transistors (IGBTs), capable of switching at 20 kHz is reported. The base drive circuit for the IGBT, incorporating short-circuit protection, is presented. The inverter uses an Undeland snubber together with a simple energy recovery circuit, which ensures reliable and efficient operation even for 20 kHz switching. The front end for the system is a regenerative single phase full-bridge IGBT inverter along with an ac reactor. Steady-state design considerations are explained, and control techniques for unity power factor operation and fast current control of the front end converter, in a rotating as well as a stationary reference frame, are discussed and compared. Results from computer simulations and experimental results for a 1.5-kW prototype system are presented.

  8. Hydrogen-silicon carbide interactions

    NASA Technical Reports Server (NTRS)

    Eckel, Andrew J.; Misra, Ajay K.; Humphrey, Donald L.; Jacobson, Nathan S.

    1990-01-01

    A study of the thermochemistry and kinetics of hydrogen environmental attack of silicon carbide was conducted for temperatures in the range from 1100 C to 1400 C. Thermodynamics maps based on the parameters of pressure and oxygen/moisture content were constructed. With increasing moisture levels, four distinct regions of attack were identified. Each region is defined by the thermodynamically stable solid phases. The theoretically stable solid phases of region 1 are silicon carbide and silicon. Experimental evidence is provided to support this thermodynamic prediction. Silicone carbide is the single stable solid phase in region 2. Active attack of the silicon carbide in this region occurs by the formation of gases of SiO, CO, CH4, SiH4 and SiH. Analyses of the kinetics of reaction for region 2 at 1300 C show the attack of the silicon carbide to be controlled by gas phase diffusion of H2O to the sample. Silicon carbide and silica are the stable phases common to regions 3 and 4. These two regions are characterized by the passive oxidation of silicon carbide and formation of a protective silica layer.

  9. Hydrogen-silicon carbide interactions

    NASA Technical Reports Server (NTRS)

    Eckel, Andrew J.; Jacobson, Nathan S.; Misra, Ajay K.; Humphrey, Donald L.

    1989-01-01

    A study of the thermochemistry and kinetics of hydrogen environmental attack of silicon carbide was conducted for temperatures in the range from 1100 C to 1400 C. Thermodynamic maps based on the parameters of pressure and oxygen/moisture content were constructed. With increasing moisture levels, four distinct regions of attack were identified. Each region is defined by the thermodynamically stable solid phases. The theoretically stable solid phases of Region 1 are silicon carbide and silicon. Experimental evidence is provided to support this thermodynamic prediction. Silicon carbide is the single stable solid phase in Region 2. Active attack of the silicon carbide in this region occurs by the formation of gases of SiO, CO, CH4, SiH4, and SiH. Analysis of the kinetics of reaction for Region 2 at 1300 C show the attack of the silicon carbide to be controlled by gas phase diffusion of H2O to the sample. Silicon carbide and silica are the stable phases common to Regions 3 and 4. These two regions are characterized by the passive oxidation of silicon carbide and formation of a protective silica layer.

  10. Intermediate Bandgap Solar Cells From Nanostructured Silicon

    SciTech Connect

    Black, Marcie

    2014-10-30

    This project aimed to demonstrate increased electronic coupling in silicon nanostructures relative to bulk silicon for the purpose of making high efficiency intermediate bandgap solar cells using silicon. To this end, we formed nanowires with controlled crystallographic orientation, small diameter, <111> sidewall faceting, and passivated surfaces to modify the electronic band structure in silicon by breaking down the symmetry of the crystal lattice. We grew and tested these silicon nanowires with <110>-growth axes, which is an orientation that should produce the coupling enhancement.

  11. Reconfigurable Resonant Regulating Rectifier With Primary Equalization for Extended Coupling- and Loading-Range in Bio-Implant Wireless Power Transfer.

    PubMed

    Li, Xing; Meng, Xiaodong; Tsui, Chi-Ying; Ki, Wing-Hung

    2015-12-01

    Wireless power transfer using reconfigurable resonant regulating (R(3)) rectification suffers from limited range in accommodating varying coupling and loading conditions. A primary-assisted regulation principle is proposed to mitigate these limitations, of which the amplitude of the rectifier input voltage on the secondary side is regulated by accordingly adjusting the voltage amplitude Veq on the primary side. A novel current-sensing method and calibration scheme track Veq on the primary side. A ramp generator simultaneously provides three clock signals for different modules. Both the primary equalizer and the R(3) rectifier are implemented as custom integrated circuits fabricated in a 0.35 μm CMOS process, with the global control implemented in FPGA. Measurements show that with the primary equalizer, the workable coupling and loading ranges are extended by 250% at 120 mW load and 300% at 1.2 cm coil distance compared to the same system without the primary equalizer. A maximum rectifier efficiency of 92.5% and a total system efficiency of 62.4% are demonstrated. PMID:26742141

  12. High-performance AlGaN /GaN lateral field-effect rectifiers compatible with high electron mobility transistors

    NASA Astrophysics Data System (ADS)

    Chen, Wanjun; Wong, King-Yuen; Huang, Wei; Chen, Kevin J.

    2008-06-01

    A high electron mobility transistor (HEMT)-compatible power lateral field-effect rectifier (L-FER) with low turn-on voltage is demonstrated using the same fabrication process as that for normally off AlGaN /GaN HEMT, providing a low-cost solution for GaN power integrated circuits. The power rectifier features a Schottky-gate-controlled two-dimensional electron gas channel between the cathode and anode. By tying up the Schottky gate and anode together, the forward turn-on voltage of the rectifier is determined by the threshold voltage of the channel instead of the Schottky barrier. The L-FER with a drift length of 10μm features a forward turn-on voltage of 0.63V at a current density of 100A/cm2. This device also exhibits a reverse breakdown voltage (BV) of 390V at a current level of 1mA/mm and a specific on resistance (RON,sp) of 1.4mΩcm2, yielding a figure of merit (BV2/RON,sp) of 108MW/cm2. The excellent device performance, coupled with the lateral device structure and process compatibility with AlGaN /GaN HEMT, make the proposed L-FER a promising candidate for GaN power integrated circuits.

  13. Crystal Structure of the Eukaryotic Strong Inward-Rectifier K[superscript +] Channel Kir2.2 at 3.1 Å Resolution

    SciTech Connect

    Tao, Xiao; Avalos, Jose L.; Chen, Jiayun; MacKinnon, Roderick

    2010-03-29

    Inward-rectifier potassium (K{sup +}) channels conduct K{sup +} ions most efficiently in one direction, into the cell. Kir2 channels control the resting membrane voltage in many electrically excitable cells, and heritable mutations cause periodic paralysis and cardiac arrhythmia. We present the crystal structure of Kir2.2 from chicken, which, excluding the unstructured amino and carboxyl termini, is 90% identical to human Kir2.2. Crystals containing rubidium (Rb{sup +}), strontium (Sr{sup 2+}), and europium (Eu{sup 3+}) reveal binding sites along the ion conduction pathway that are both conductive and inhibitory. The sites correlate with extensive electrophysiological data and provide a structural basis for understanding rectification. The channel's extracellular surface, with large structured turrets and an unusual selectivity filter entryway, might explain the relative insensitivity of eukaryotic inward rectifiers to toxins. These same surface features also suggest a possible approach to the development of inhibitory agents specific to each member of the inward-rectifier K{sup +} channel family.

  14. Reconfigurable Resonant Regulating Rectifier With Primary Equalization for Extended Coupling- and Loading-Range in Bio-Implant Wireless Power Transfer.

    PubMed

    Li, Xing; Meng, Xiaodong; Tsui, Chi-Ying; Ki, Wing-Hung

    2015-12-01

    Wireless power transfer using reconfigurable resonant regulating (R(3)) rectification suffers from limited range in accommodating varying coupling and loading conditions. A primary-assisted regulation principle is proposed to mitigate these limitations, of which the amplitude of the rectifier input voltage on the secondary side is regulated by accordingly adjusting the voltage amplitude Veq on the primary side. A novel current-sensing method and calibration scheme track Veq on the primary side. A ramp generator simultaneously provides three clock signals for different modules. Both the primary equalizer and the R(3) rectifier are implemented as custom integrated circuits fabricated in a 0.35 μm CMOS process, with the global control implemented in FPGA. Measurements show that with the primary equalizer, the workable coupling and loading ranges are extended by 250% at 120 mW load and 300% at 1.2 cm coil distance compared to the same system without the primary equalizer. A maximum rectifier efficiency of 92.5% and a total system efficiency of 62.4% are demonstrated.

  15. Small scale ethanol production demonstration: comparison of packed versus plate rectifying column

    SciTech Connect

    Adcock, II, L E; Eley, M H; Schroer, B J

    1982-07-01

    The Johnson Environmental and Energy Center with assistance from the Madison County Farm Bureau Association received a grant in 1980 from the US Department of Energy to design, fabricate, and evaluate a small scale continuous ethanol plant. In 1981, the Center received a second DOE grant to compare the economics of replacing the plate rectifying column in the initial unit with a packed rectifying column. The results of the study indicate that the distillation unit with the packed rectifying column is capable of producing 14 gallons per hour of 170 proof ethanol. The energy ratio for distillation was a positive 2:1. Cost of the packed column was considerably less than the plate column. 1 reference, 19 figures, 9 tables.

  16. Theoretical study on the rectifying performance of organoimido derivatives of hexamolybdates.

    PubMed

    Wen, Shizheng; Yang, Guochun; Yan, Likai; Li, Haibin; Su, Zhongmin

    2013-02-25

    We design a new type of molecular diode, based on the organoimido derivatives of hexamolybdates, by exploring the rectifying performances using density functional theory combined with the non-equilibrium Green's function. Asymmetric current-voltage characteristics were obtained for the models with an unexpected large rectification ratio. The rectifying behavior can be understood by the asymmetrical shift of the transmission peak observed under different polarities. It is interesting to find that the preferred electron-transport direction in our studied system is different from that of the organic D-bridge-A system. The results show that the studied organic-inorganic hybrid systems have an intrinsically robust rectifying ratio, which should be taken into consideration in the design of the molecular diodes.

  17. Study of Microstructure and Transient, Instantaneous Current in Different Excitations During Silicon Micromachining

    NASA Astrophysics Data System (ADS)

    Kulkarni, A. V.; Jain, V. K.; Misra, K. A.

    2012-09-01

    Study of transient, instantaneous current during silicon micromachining using electrochemical spark process is carried out. Voltage excitation of three kinds namely, dc, Half wave rectified and ac are used to carve the micro channels. The transient and instantaneous process current is measured online and analyzed for each excitation. Micromachining and the surface topography results are presented. The transient current reveals the mechanism of the spark formation and explains the inherent process stages.

  18. Microrectenna: A Terahertz Antenna and Rectifier on a Chip

    NASA Technical Reports Server (NTRS)

    Siegel, Peter

    2007-01-01

    A microrectenna that would operate at a frequency of 2.5 THz has been designed and partially fabricated. The circuit is intended to be a prototype of an extremely compact device that could be used to convert radio-beamed power to DC to drive microdevices (see Figure 1). The microrectenna (see Figure 2) circuit consists of an antenna, a diode rectifier and a DC output port. The antenna consists of a twin slot array in a conducting ground plane (denoted the antenna ground plane) over an enclosed quarter-wavelength-thick resonant cavity (denoted the reflecting ground plane). The circuit also contains a planar high-frequency low-parasitic Schottky-barrier diode, a low-impedance microstrip transmission line, capacitors, and contact beam leads. The entire 3-D circuit is fabricated monolithically from a single GaAs wafer. The resonant cavity renders the slot radiation pattern unidirectional with a half-power beam width of about 65. A unique metal mesh on the rear of the wafer forms the backplate for the cavity but allows the GaAs to be wet etched from the rear surface of the twin slot antennas and ground plane. The beam leads protrude past the edge of the chip and are used both to mount the microrectenna and to make the DC electrical connection with external circuitry. The antenna ground plane and the components on top of it are formed on a 2- m thick GaAs membrane that is grown in the initial wafer MBE (molecular beam epitaxy) process. The side walls of the antenna cavity are not metal coated and, hence, would cause some loss of power; however, the relatively high permittivity (epsilon=13) of the GaAs keeps the cavity modes well confined, without the usual surface-wave losses associated with thick dielectric substrates. The Schottky-barrier diode has the usual submicron dimensions associated with THz operation and is formed in a mesa process above the antenna ground plane. The diode is connected at the midpoint of a microstrip transmission line, which is formed on 1- m

  19. Revisiting the Rectifier: New Observations of Covariance Between Terrestrial Carbon Cycling and Boundary Layer Depth (Invited)

    NASA Astrophysics Data System (ADS)

    Denning, S.; McGrath-Spangler, E. L.

    2013-12-01

    Covariance between land-surface carbon fluxes and vertical mixing in the atmosphere is among the strongest determinants of the spatial distribution of atmospheric CO2 in the lower troposphere. Differences in the magnitude of this "CO2 rectifier effect" among different tracer transport models has been shown to explain most of the variability in estimates of terrestrial carbon sinks over the northern (vs tropical) continents. We present a new analysis of the magnitude of the CO2 rectifier using a climatology of PBL depth estimated using vertical profiles of LIDAR backscatter from the CALIPSO satellite. Millions of separate soundings of PBL depth were matched with hourly estimates of photosynthesis and ecosystem respiration from the Simple Biosphere Model (SiB3) at the same locations and times over more than 6 years. Strong covariance between net carbon flux and atmospheric mixing were observed over the northern continents, especially over Boreal Asia. Negative covariance is observed over monsoon regions, which is especially strong over India. Covariance of net carbon flux with the reciprocal of PBL depth has the units of CO2 tendency (ppm per month), and can be expressed as rectifier forcing. Satellite sampling of this quantity reveals spatially-coherent patterns as strong as +/- 10 ppm per month over Siberia and India. We computed rectifier forcing with NASA's Modern Era Reanalysis (MERRA) for the same locations and times sampled by CALIPSO from 2006-2012. Comparison of the MERRA and CALIPSO data reveal that the spatial patterns and magnitudes are similar over the northern continents, but much weaker in MERRA than CALIPSO over the tropics. Using MERRA to compute the rectifier effect for SiB fluxes in GEOS-Chem allows us to establish a quantitative relationship between rectifier forcing and response that is evaluated against the CALIPSO boundary layer data. We propose a framework for model intercomparison and evaluation that can leverage the rich new data set.

  20. TOPICAL REVIEW: Black silicon method X: a review on high speed and selective plasma etching of silicon with profile control: an in-depth comparison between Bosch and cryostat DRIE processes as a roadmap to next generation equipment

    NASA Astrophysics Data System (ADS)

    Jansen, H V; de Boer, M J; Unnikrishnan, S; Louwerse, M C; Elwenspoek, M C

    2009-03-01

    An intensive study has been performed to understand and tune deep reactive ion etch (DRIE) processes for optimum results with respect to the silicon etch rate, etch profile and mask etch selectivity (in order of priority) using state-of-the-art dual power source DRIE equipment. The research compares pulsed-mode DRIE processes (e.g. Bosch technique) and mixed-mode DRIE processes (e.g. cryostat technique). In both techniques, an inhibitor is added to fluorine-based plasma to achieve directional etching, which is formed out of an oxide-forming (O2) or a fluorocarbon (FC) gas (C4F8 or CHF3). The inhibitor can be introduced together with the etch gas, which is named a mixed-mode DRIE process, or the inhibitor can be added in a time-multiplexed manner, which will be termed a pulsed-mode DRIE process. Next, the most convenient mode of operation found in this study is highlighted including some remarks to ensure proper etching (i.e. step synchronization in pulsed-mode operation and heat control of the wafer). First of all, for the fabrication of directional profiles, pulsed-mode DRIE is far easier to handle, is more robust with respect to the pattern layout and has the potential of achieving much higher mask etch selectivity, whereas in a mixed-mode the etch rate is higher and sidewall scalloping is prohibited. It is found that both pulsed-mode CHF3 and C4F8 are perfectly suited to perform high speed directional etching, although they have the drawback of leaving the FC residue at the sidewalls of etched structures. They show an identical result when the flow of CHF3 is roughly 30 times the flow of C4F8, and the amount of gas needed for a comparable result decreases rapidly while lowering the temperature from room down to cryogenic (and increasing the etch rate). Moreover, lowering the temperature lowers the mask erosion rate substantially (and so the mask selectivity improves). The pulsed-mode O2 is FC-free but shows only tolerable anisotropic results at -120 °C. The

  1. Femtosecond laser-induced periodic surface structures on silicon upon polarization controlled two-color double-pulse irradiation.

    PubMed

    Höhm, Sandra; Herzlieb, Marcel; Rosenfeld, Arkadi; Krüger, Jörg; Bonse, Jörn

    2015-01-12

    Two-color double-fs-pulse experiments were performed on silicon wafers to study the temporally distributed energy deposition in the formation of laser-induced periodic surface structures (LIPSS). A Mach-Zehnder interferometer generated parallel or cross-polarized double-pulse sequences at 400 and 800 nm wavelength, with inter-pulse delays up to a few picoseconds between the sub-ablation 50-fs-pulses. Multiple two-color double-pulse sequences were collinearly focused by a spherical mirror to the sample. The resulting LIPSS characteristics (periods, areas) were analyzed by scanning electron microscopy. A wavelength-dependent plasmonic mechanism is proposed to explain the delay-dependence of the LIPSS. These two-color experiments extend previous single-color studies and prove the importance of the ultrafast energy deposition for LIPSS formation.

  2. Photocatalytic Properties of Porous Silicon Nanowires.

    PubMed

    Qu, Yongquan; Zhong, Xing; Li, Yujing; Liao, Lei; Huang, Yu; Duan, Xiangfeng

    2010-01-01

    Porous silicon nanowires are synthesized through metal assisted wet-chemical etch of highly-doped silicon wafer. The resulted porous silicon nanowires exhibit a large surface area of 337 m(2)·g(-1) and a wide spectrum absorption across the entire ultraviolet, visible and near infrared regime. We further demonstrate that platinum nanoparticles can be loaded onto the surface of the porous silicon nanowires with controlled density. These combined advancements make the porous silicon nanowires an interesting material for photocatalytic applications. We show that the porous silicon nanowires and platinum nanoparticle loaded porous silicon nanowires can be used as effective photocatalysts for photocatalytic degradation of organic dyes and toxic pollutants under visible irradiation, and thus are of significant interest for organic waste treatment and environmental remediation.

  3. Transport of particles and microorganisms in microfluidic channels using rectified ac electro-osmotic flow

    PubMed Central

    Wu, Wen-I; Selvaganapathy, P. Ravi; Ching, Chan Y.

    2011-01-01

    A new method is demonstrated to transport particles, cells, and other microorganisms using rectified ac electro-osmotic flows in open microchannels. The rectified flow is obtained by synchronous zeta potential modulation with the driving potential in the microchannel. Experiments were conducted to transport both neutral, charged particles, and microorganisms of various sizes. A maximum speed of 50 μm∕s was obtained for 8 μm polystyrene beads, without any electrolysis, using a symmetrical square waveform driving electric field of 5 V∕mm at 10 Hz and a 360 V gate potential with its polarity synchronized with the driving potential (phase lag=0°). PMID:21522497

  4. Observation of three-level rectified dipole forces acting on trapped atoms

    NASA Astrophysics Data System (ADS)

    Grove, T. T.; Duncan, B. C.; Sanchez-Villicana, V.; Gould, P. L.

    1995-06-01

    We have observed rectified dipole forces acting on three-level atoms in the cascade configuration. Laser cooled and trapped rubidium atoms are illuminated with an intense bichromatic standing wave (780 and 776 nm) tuned near resonance with the 5S1/2-->5P3/2-->5D5/2 transitions. The resulting rectified forces produce periodic potential wells (71-μm period), which localize the cold atoms. Experimental results are in reasonable agreement with theoretical predictions. These forces may be useful in atom optics and laser traps.

  5. Molecular Basis of Cardiac Delayed Rectifier Potassium Channel Function and Pharmacology.

    PubMed

    Wu, Wei; Sanguinetti, Michael C

    2016-06-01

    Human cardiomyocytes express 3 distinct types of delayed rectifier potassium channels. Human ether-a-go-go-related gene (hERG) channels conduct the rapidly activating current IKr; KCNQ1/KCNE1 channels conduct the slowly activating current IKs; and Kv1.5 channels conduct an ultrarapid activating current IKur. Here the authors provide a general overview of the mechanistic and structural basis of ion selectivity, gating, and pharmacology of the 3 types of cardiac delayed rectifier potassium ion channels. Most blockers bind to S6 residues that line the central cavity of the channel, whereas activators interact with the channel at 4 symmetric binding sites outside the cavity. PMID:27261821

  6. Rectifying properties of magnetite-based Schottky diode and the effects of magnetic field

    NASA Astrophysics Data System (ADS)

    Chen, Y. Z.; Sun, J. R.; Xie, Y. W.; Wang, D. J.; Lu, W. M.; Liang, S.; Shen, B. G.

    2007-04-01

    Rectifying properties, with and without magnetic field, of a high quality Fe3O4/SrTiO3:Nb Schottky diode have been experimentally studied. The junction exhibits an excellent rectifying behavior both below and above the Verwey temperature (TV) of Fe3O4. Magnetic field has a weak but visible effect on the transport process of the junction, producing a negative magnetoresistance for T TV. Based on an analysis of the current-voltage characteristics, the spin polarization of Fe3O4 has been deduced. It is a strong function of temperature, varying between -78% and 18%.

  7. Effect of ethanol at clinically relevant concentrations on atrial inward rectifier potassium current sensitive to acetylcholine.

    PubMed

    Bébarová, Markéta; Matejovič, Peter; Pásek, Michal; Hořáková, Zuzana; Hošek, Jan; Šimurdová, Milena; Šimurda, Jiří

    2016-10-01

    Alcohol intoxication tends to induce arrhythmias, most often the atrial fibrillation. To elucidate arrhythmogenic mechanisms related to alcohol consumption, the effect of ethanol on main components of the ionic membrane current is investigated step by step. Considering limited knowledge, we aimed to examine the effect of clinically relevant concentrations of ethanol (0.8-80 mM) on acetylcholine-sensitive inward rectifier potassium current I K(Ach). Experiments were performed by the whole-cell patch clamp technique at 23 ± 1 °C on isolated rat and guinea-pig atrial myocytes, and on expressed human Kir3.1/3.4 channels. Ethanol induced changes of I K(Ach) in the whole range of concentrations applied; the effect was not voltage dependent. The constitutively active component of I K(Ach) was significantly increased by ethanol with the maximum effect (an increase by ∼100 %) between 8 and 20 mM. The changes were comparable in rat and guinea-pig atrial myocytes and also in expressed human Kir3.1/3.4 channels (i.e., structural correlate of I K(Ach)). In the case of the acetylcholine-induced component of I K(Ach), a dual ethanol effect was apparent with a striking heterogeneity of changes in individual cells. The effect correlated with the current magnitude in control: the current was increased by eth-anol in the cells showing small current in control and vice versa. The average effect peaked at 20 mM ethanol (an increase of the current by ∼20 %). Observed changes of action potential duration agreed well with the voltage clamp data. Ethanol significantly affected both components of I K(Ach) even in concentrations corresponding to light alcohol consumption.

  8. Recovery Act: High-Efficiency, Wideband Three-Phase Rectifiers and Adaptive Rectifier Management for Telecomm Central Office and Large Data Center Applications

    SciTech Connect

    Mark A. Johnson

    2012-06-29

    Lineage Power and Verizon teamed up to address a DOE funding opportunity focused on improving the power conversion chain in telecommunications facilities and data centers. The project had three significant elements: the design and development of high efficiency and high power three-phase rectifiers by Lineage Power, design and development of software to optimize overall plant energy efficiency by Lineage Power, and a field trial in active Verizon telecommunications facilities where energy consumption was measured before and after efficiency upgrades.

  9. Production of electronic grade lunar silicon by disproportionation of silicon difluoride

    NASA Technical Reports Server (NTRS)

    Agosto, William N.

    1993-01-01

    Waldron has proposed to extract lunar silicon by sodium reduction of sodium fluorosilicate derived from reacting sodium fluoride with lunar silicon tetrafluoride. Silicon tetrafluoride is obtained by the action of hydrofluoric acid on lunar silicates. While these reactions are well understood, the resulting lunar silicon is not likely to meet electronic specifications of 5 nines purity. Dale and Margrave have shown that silicon difluoride can be obtained by the action of silicon tetrafluoride on elemental silicon at elevated temperatures (1100-1200 C) and low pressures (1-2 torr). The resulting silicon difluoride will then spontaneously disproportionate into hyperpure silicon and silicon tetrafluoride in vacuum at approximately 400 C. On its own merits, silicon difluoride polymerizes into a tough waxy solid in the temperature range from liquid nitrogen to about 100 C. It is the silicon analog of teflon. Silicon difluoride ignites in moist air but is stable under lunar surface conditions and may prove to be a valuable industrial material that is largely lunar derived for lunar surface applications. The most effective driver for lunar industrialization may be the prospects for industrial space solar power systems in orbit or on the moon that are built with lunar materials. Such systems would require large quantities of electronic grade silicon or compound semiconductors for photovoltaics and electronic controls. Since silicon is the most abundant semimetal in the silicate portion of any solar system rock (approximately 20 wt percent), lunar silicon production is bound to be an important process in such a solar power project. The lunar silicon extraction process is discussed.

  10. Production of electronic grade lunar silicon by disproportionation of silicon difluoride

    NASA Astrophysics Data System (ADS)

    Agosto, William N.

    1993-03-01

    Waldron has proposed to extract lunar silicon by sodium reduction of sodium fluorosilicate derived from reacting sodium fluoride with lunar silicon tetrafluoride. Silicon tetrafluoride is obtained by the action of hydrofluoric acid on lunar silicates. While these reactions are well understood, the resulting lunar silicon is not likely to meet electronic specifications of 5 nines purity. Dale and Margrave have shown that silicon difluoride can be obtained by the action of silicon tetrafluoride on elemental silicon at elevated temperatures (1100-1200 C) and low pressures (1-2 torr). The resulting silicon difluoride will then spontaneously disproportionate into hyperpure silicon and silicon tetrafluoride in vacuum at approximately 400 C. On its own merits, silicon difluoride polymerizes into a tough waxy solid in the temperature range from liquid nitrogen to about 100 C. It is the silicon analog of teflon. Silicon difluoride ignites in moist air but is stable under lunar surface conditions and may prove to be a valuable industrial material that is largely lunar derived for lunar surface applications. The most effective driver for lunar industrialization may be the prospects for industrial space solar power systems in orbit or on the moon that are built with lunar materials. Such systems would require large quantities of electronic grade silicon or compound semiconductors for photovoltaics and electronic controls. Since silicon is the most abundant semimetal in the silicate portion of any solar system rock (approximately 20 wt percent), lunar silicon production is bound to be an important process in such a solar power project. The lunar silicon extraction process is discussed.

  11. Simple evaporation controller for thin-film deposition from a resistively heated boat

    NASA Technical Reports Server (NTRS)

    Scofield, John H.; Bajuk, Lou; Mohler, William

    1990-01-01

    A simple, inexpensive circuit is described for switching the current through a resistively heated evaporation boat during thin-film deposition. The circuit uses a silicon-controlled rectifier (SCR) to switch the 0-15-A current in the primary of a 2-kV A step-down transformer that supplies the 0-200-A current to an evaporation boat. The circuit is controlled by a 0-10 V-dc signal similar to that furnished by an Inficon XTC deposition-rate controller. This circuit may be assembled from a handful of parts for a cost of about $400, nearly one-tenth the cost of similar commercial units. Minimum construction is required, since the circuit is built around an off-the-shelf, self-contained SCR unit.

  12. Simple evaporation controller for thin-film deposition from a resistively heated boat

    NASA Astrophysics Data System (ADS)

    Scofield, John H.; Bajuk, Lou; Mohler, William

    1990-07-01

    A simple, inexpensive circuit is described for switching the current through a resistively heated evaporation boat during thin-film deposition. The circuit uses a silicon-controlled rectifier (SCR) to switch the 0-15-A current in the primary of a 2-kV A step-down transformer that supplies the 0-200-A current to an evaporation boat. The circuit is controlled by a 0-10 V-dc signal similar to that furnished by an Inficon XTC deposition-rate controller. This circuit may be assembled from a handful of parts for a cost of about $400, nearly one-tenth the cost of similar commercial units. Minimum construction is required, since the circuit is built around an off-the-shelf, self-contained SCR unit.

  13. A novel inward-rectifying K+ current with a cell-cycle dependence governs the resting potential of mammalian neuroblastoma cells.

    PubMed Central

    Arcangeli, A; Bianchi, L; Becchetti, A; Faravelli, L; Coronnello, M; Mini, E; Olivotto, M; Wanke, E

    1995-01-01

    1. Human and murine neuroblastoma cell lines were used to investigate, by the whole-cell patch-clamp technique, the properties of a novel inward-rectifying K+ current (IIR) in the adjustment of cell resting potential (Vrest), which was in the range -40 to -20 mV. 2. When elicited from a holding potential of 0 mV, IIR was completely inactivated with time constants ranging from 13 ms at -140 mV to 4.5 s at -50 mV. The steady-state inactivation curve (h(V)) was found to be independent of [Na+]o and [K+]o (2-80 mM) and could be fitted to a Boltzmann curve with a steep slope factor of 5-6, and a V1/2 around Vrest. Divalent ion-free extracellular solutions shifted h(V) to the left by about 28 mV. 3. Peak chord conductance, whose maximal value was approximately proportional to the square root of [K+]o, could be fitted to a Boltzmann curve independently of [K+]o, with a V1/2 value around -48 mV and a slope factor of 18. Extracellular Cs+ and Ba2+ blocked the IIR in a concentration- and voltage-dependent manner, but Ba2+ was less effective than it is on classical inward-rectifier channels. 4. Under control culture conditions the values of Vrest and V1/2 of h(V) varied widely among cells. The knowledge of V1/2 proved crucial or the theoretical prediction of Vrest. After cell synchronization in the G0-G1 phase of the cell cycle, or at the G1-S boundaries, the cells reduced their variability of h(V). The same occurred after cell synchronization in G1 by treatment with retinoic acid. 5. The experimental data could be fitted to a classical model of an inward rectifier, after removing the dependence of conductance activation on (V-EK), and incorporating an inactivation with an intrinsic voltage dependence. Moreover, the model predicts, for this novel inward rectifier and in contrast with the classical inward rectifier, the incapacity of maintaining, in physiological media, a Vrest more negative than -35 to -40 mV, which is an important feature of cancer cells. PMID:8847640

  14. Uncooled THz/sub-THz Rectifying Detectors: FET vs. SBD

    NASA Astrophysics Data System (ADS)

    Sakhno, M.; Sizov, F.; Golenkov, A.

    2013-12-01

    The parameters (responsivity R and noise equivalent power ( NEP)) of long channel unbiased (zero drain-source bias ( V DS = 0)) silicon field effect transistors (FET) as THz/sub-THz detectors with account of some parasitics were considered. These parameters and their radiation frequency ν dependences are compared with those of contemporary Schottky barrier diode (SBD) THz/sub-THz detectors. To describe and compare the known experimental data for both of detectors similar models, taking into account the parasitics (some FET or SBD resistances and capacities), were used. It is shown that taking into account the parasitics and detector-antenna impedance matching one can describe Si FET detector parameters and estimate the performance limits of such detectors. The R and NEP radiation frequency ν dependences are similar for FET and SBD detectors and are proportional to ν -2 or to ν -4. The model used for SBD detectors describes well the known experimental data for optical NEP opt but for Si FET ones the sufficient scatter in experimental data is observed. The reason of it seems is mainly due to non-optimized technologies for FETs as detectors for THz/sub-THz radiation.

  15. Investigations of silicon nitride films for silicon solar cells

    SciTech Connect

    Elmiger, J.R.; Kunst, M.

    1996-12-31

    Silicon nitride films on crystalline silicon were deposited in a low-temperature (<400 C) Plasma Enhanced Chemical Vapour Deposition process. The deposition process is monitored with in situ Time Resolved Microwave Conductivity measurements leading to an on-line quality control of the deposited films. It is shown that at the start of the deposition there is a strong decrease of the lifetime of the measured transient signal due to plasma induced damage at the silicon surface. Afterwards an increase of the lifetime is observed due to passivation of the interface. For thin films (<30 nm), the lifetime and the film composition depend on the film thickness. Furthermore, the film composition has a strong impact on the passivation of thick (100 nm) silicon nitride films. The best passivation is obtained for almost stoichiometric films characterized by a refractive index of 1.95.

  16. Damage Mechanisms and Controlled Crack Propagation in a Hot Pressed Silicon Nitride Ceramic. Ph.D. Thesis - Northwestern Univ., 1993

    NASA Technical Reports Server (NTRS)

    Calomino, Anthony Martin

    1994-01-01

    The subcritical growth of cracks from pre-existing flaws in ceramics can severely affect the structural reliability of a material. The ability to directly observe subcritical crack growth and rigorously analyze its influence on fracture behavior is important for an accurate assessment of material performance. A Mode I fracture specimen and loading method has been developed which permits the observation of stable, subcritical crack extension in monolithic and toughened ceramics. The test specimen and procedure has demonstrated its ability to generate and stably propagate sharp, through-thickness cracks in brittle high modulus materials. Crack growth for an aluminum oxide ceramic was observed to be continuously stable throughout testing. Conversely, the fracture behavior of a silicon nitride ceramic exhibited crack growth as a series of subcritical extensions which are interrupted by dynamic propagation. Dynamic initiation and arrest fracture resistance measurements for the silicon nitride averaged 67 and 48 J/sq m, respectively. The dynamic initiation event was observed to be sudden and explosive. Increments of subcritical crack growth contributed to a 40 percent increase in fracture resistance before dynamic initiation. Subcritical crack growth visibly marked the fracture surface with an increase in surface roughness. Increments of subcritical crack growth loosen ceramic material near the fracture surface and the fracture debris is easily removed by a replication technique. Fracture debris is viewed as evidence that both crack bridging and subsurface microcracking may be some of the mechanisms contributing to the increase in fracture resistance. A Statistical Fracture Mechanics model specifically developed to address subcritical crack growth and fracture reliability is used together with a damaged zone of material at the crack tip to model experimental results. A Monte Carlo simulation of the actual experiments was used to establish a set of modeling input

  17. Silicon Nanowire Devices

    NASA Astrophysics Data System (ADS)

    Kamins, Theodore

    2006-03-01

    Metal-catalyzed, self-assembled, one-dimensional semiconductor nanowires are being considered as possible device elements to augment and supplant conventional electronics and to extend the use of CMOS beyond the physical and economic limits of conventional technology. Such nanowires can create nanostructures without the complexity and cost of extremely fine scale lithography. The well-known and controllable properties of silicon make silicon nanowires especially attractive. Easy integration with conventional electronics will aid their acceptance and incorporation. For example, connections can be formed to both ends of a nanowire by growing it laterally from a vertical surface formed by etching the top silicon layer of a silicon-on-insulator structure into isolated electrodes. Field-effect structures are one class of devices that can be readily built in silicon nanowires. Because the ratio of surface to volume in a thin nanowire is high, conduction through the nanowire is very sensitive to surface conditions, making it effective as the channel of a field-effect transistor or as the transducing element of a gas or chemical sensor. As the nanowire diameter decreases, a greater fraction of the mobile charge can be modulated by a given external charge, increasing the sensitivity. Having the gate of a nanowire transistor completely surround the nanowire also enhances the sensitivity. For a field-effect sensor to be effective, the charge must be physically close to the nanowire so that the majority of the compensating charge is induced in the nanowire and so that ions in solution do not screen the charge. Because only induced charge is being sensed, a coating that selectively binds the target species should be added to the nanowire surface to distinguish between different species in the analyte. The nanowire work at Hewlett-Packard Laboratories was supported in part by the Defense Advanced Research Projects Agency.

  18. ATP-mediated vasodilatation occurs via activation of inwardly rectifying potassium channels in humans.

    PubMed

    Crecelius, Anne R; Kirby, Brett S; Luckasen, Gary J; Larson, Dennis G; Dinenno, Frank A

    2012-11-01

    Circulating ATP possesses unique vasomotor properties in humans and has been hypothesized to play a role in vascular control under a variety of physiological conditions. However, the primary downstream signalling mechanisms underlying ATP-mediated vasodilatation remain unclear. The purpose of the present experiment was to determine whether ATP-mediated vasodilatation is independent of nitric oxide (NO) and prostaglandin (PG) synthesis and occurs primarily via the activation of Na(+)/K(+)-ATPase and inwardly rectifying potassium (K(IR)) channels in humans. In all protocols, young healthy adults were studied and forearm vascular conductance (FVC) was calculated from forearm blood flow (measured via venous occlusion plethysmography) and intra-arterial blood pressure to quantify local vasodilatation. Vasodilator responses (%FVC) during intra-arterial ATP infusions were unchanged following combined inhibition of NO and PGs (n = 8; P > 0.05) whereas the responses to KCl were greater (P < 0.05). Combined infusion of ouabain (to inhibit Na(+)/K(+)-ATPase) and barium chloride (BaCl(2); to inhibit K(IR) channels) abolished KCl-mediated vasodilatation (n = 6; %FVC = 134 ± 13 vs. 4 ± 5%; P < 0.05), demonstrating effective blockade of direct vascular hyperpolarization. The vasodilator responses to three different doses of ATP were inhibited on average 56 ± 5% (n = 16) following combined ouabain plus BaCl(2) infusion. In follow-up studies, BaCl(2) alone inhibited the vasodilator responses to ATP on average 51 ± 3% (n = 6), which was not different than that observed for combined ouabain plus BaCl(2) administration. Our novel results indicate that the primary mechanism of ATP-mediated vasodilatation is vascular hyperpolarization via activation of K(IR) channels. These observations translate in vitro findings to humans in vivo and may help explain the unique vasomotor properties of intravascular ATP in the human circulation.

  19. ATP-mediated vasodilatation occurs via activation of inwardly rectifying potassium channels in humans

    PubMed Central

    Crecelius, Anne R; Kirby, Brett S; Luckasen, Gary J; Larson, Dennis G; Dinenno, Frank A

    2012-01-01

    Circulating ATP possesses unique vasomotor properties in humans and has been hypothesized to play a role in vascular control under a variety of physiological conditions. However, the primary downstream signalling mechanisms underlying ATP-mediated vasodilatation remain unclear. The purpose of the present experiment was to determine whether ATP-mediated vasodilatation is independent of nitric oxide (NO) and prostaglandin (PG) synthesis and occurs primarily via the activation of Na+/K+-ATPase and inwardly rectifying potassium (KIR) channels in humans. In all protocols, young healthy adults were studied and forearm vascular conductance (FVC) was calculated from forearm blood flow (measured via venous occlusion plethysmography) and intra-arterial blood pressure to quantify local vasodilatation. Vasodilator responses (%ΔFVC) during intra-arterial ATP infusions were unchanged following combined inhibition of NO and PGs (n= 8; P > 0.05) whereas the responses to KCl were greater (P < 0.05). Combined infusion of ouabain (to inhibit Na+/K+-ATPase) and barium chloride (BaCl2; to inhibit KIR channels) abolished KCl-mediated vasodilatation (n= 6; %ΔFVC = 134 ± 13 vs. 4 ± 5%; P < 0.05), demonstrating effective blockade of direct vascular hyperpolarization. The vasodilator responses to three different doses of ATP were inhibited on average 56 ± 5% (n= 16) following combined ouabain plus BaCl2 infusion. In follow-up studies, BaCl2 alone inhibited the vasodilator responses to ATP on average 51 ± 3% (n= 6), which was not different than that observed for combined ouabain plus BaCl2 administration. Our novel results indicate that the primary mechanism of ATP-mediated vasodilatation is vascular hyperpolarization via activation of KIR channels. These observations translate in vitro findings to humans in vivo and may help explain the unique vasomotor properties of intravascular ATP in the human circulation. PMID:22777673

  20. Effect of the fused quartz particle density on nucleation and grain control of high-performance multicrystalline silicon ingots

    NASA Astrophysics Data System (ADS)

    Ding, Junjing; Yu, Yunyang; Chen, Wenliang; Zhou, Xucheng; Wu, Zhiyong; Zhong, Genxiang; Huang, Xinming

    2016-11-01

    The nucleation process of high-performance multicrystalline silicon (HP mc-Si) growth seeded by fused quartz particles (FQP) through directional solidification is crucial for the ingot quality. To determine the optimal density of FQP and obtain a better nucleation process and the grain growth, we cast ingots using four different densities of FQP fixed on the bottom of the four quartz crucibles and covered them with a certain thickness of Si3N4 coating. FQP sizes of 30-50 mesh were used, and the influence of the fused quartz particle density on the nucleation mechanism, initial grain uniformity, grain size, density of dislocation clusters, and cell efficiency were analyzed. Compared with the ingots seeded with other three densities of FQP, the 220 particles/cm2 of FQP seeded ingot showed better uniformity of nucleation and initial grains. A large number of small uniform Si grains with lower density of dislocation clusters in the bottom of the ingot were observed. The average conversion efficiency of p-type solar cells manufactured with the 220 particles/cm2 seeded ingot (18.28%) was 0.19% higher than that manufactured with the 120 particles/cm2 seeded ingot (18.09%).

  1. Advances in the understanding of low molecular weight silicon formation and implications for control by AMC filters

    NASA Astrophysics Data System (ADS)

    Lobert, Jürgen M.; Cate, Philip W.; Ruede, David J.; Wildgoose, Joseph R.; Miller, Charles M.; Gaudreau, John C.

    2010-03-01

    Trimethylsilanol (TMS) is a low molecular weight / low boiling point silicon-containing, airborne contaminant that has received increased interest over the past few years as an important cause for contamination of optical surfaces in lithography equipment. TMS is not captured well by carbon-based filters, and hexamethyldisiloxane (HMDSO), even though captured well, can be converted to TMS when using acidic filter media commonly used for ammonia removal. TMS and HMDSO co-exist in a chemical equilibrium, which is affected by the acidity and moisture of their environment. This publication shows that HMDSO is converted to TMS by acidic media at concentrations typically found in cleanroom environments. This is contrary to published results that show a re-combination of TMS to HMDSO on acid media. We also demonstrate that, based on its conversion to TMS, HMDSO is not a suitable test compound for hybrid chemical filter performance, as the apparent lifetime/capacity of the filter can be substantially skewed towards larger numbers when conversion to TMS is involved. We show lifetime test results with toluene and HMDSO on acidic and non-acidic filter media. Appropriately designed, asymmetric hybrid chemical filters significantly minimize or eliminate the conversion of HMDSO to TMS, thereby reducing the risk to scanner optical elements. Similarly, such filters can also prevent or reduce acid-sensitive reactions of other AMC when passing through filter systems.

  2. Versatile control of metal-assisted chemical etching for vertical silicon microwire arrays and their photovoltaic applications

    PubMed Central

    Um, Han-Don; Kim, Namwoo; Lee, Kangmin; Hwang, Inchan; Hoon Seo, Ji; Yu, Young J.; Duane, Peter; Wober, Munib; Seo, Kwanyong

    2015-01-01

    A systematic study was conducted into the use of metal-assisted chemical etching (MacEtch) to fabricate vertical Si microwire arrays, with several models being studied for the efficient redox reaction of reactants with silicon through a metal catalyst by varying such parameters as the thickness and morphology of the metal film. By optimizing the MacEtch conditions, high-quality vertical Si microwires were successfully fabricated with lengths of up to 23.2 μm, which, when applied in a solar cell, achieved a conversion efficiency of up to 13.0%. These solar cells also exhibited an open-circuit voltage of 547.7 mV, a short-circuit current density of 33.2 mA/cm2, and a fill factor of 71.3% by virtue of the enhanced light absorption and effective carrier collection provided by the Si microwires. The use of MacEtch to fabricate high-quality Si microwires therefore presents a unique opportunity to develop cost-effective and highly efficient solar cells. PMID:26060095

  3. Controlled translocation of DNA through nanopores in carbon nano-, silicon-nitride- and lipid-coated membranes.

    PubMed

    Sischka, Andy; Galla, Lukas; Meyer, Andreas J; Spiering, Andre; Knust, Sebastian; Mayer, Michael; Hall, Adam R; Beyer, André; Reimann, Peter; Gölzhäuser, Armin; Anselmetti, Dario

    2015-07-21

    We investigated experimentally and theoretically the translocation forces when a charged polymer is threaded through a solid-state nanopore and found distinct dependencies on the nanopore diameter as well as on the nano membrane material chemistry. For this purpose we utilized dedicated optical tweezers force mechanics capable of probing the insertion of negatively charged double-stranded DNA inside a helium-ion drilled nanopore. We found that both the diameter of the nanopore and the membrane material itself have significant influences on the electroosmotic flow through the nanopore and thus on the threading force. Compared to a bare silicon-nitride membrane, the threading of DNA through only 3 nm thin carbon nano membranes as well as lipid bilayer-coated nanopores increased the threading force by 15% or 85%, respectively. This finding was quantitatively described by our recently developed theoretical model that also incorporates hydrodynamic slip effects on the translocating DNA molecule and the force dependence on the membrane thickness. The additional measurements presented in this paper further support our model.

  4. Rectified images of selected geologic maps in the Northern Rockies Area, Idaho, Montana, Washington, and Wyoming

    USGS Publications Warehouse

    Larsen, Jeremy C.; Assmus, Kenneth C.; Causey, J. Douglas; Zientek, Michael L.

    2004-01-01

    Selected geologic maps covering parts of the Northern Rocky Mountains and adjacent areas were converted to raster images and georeferenced (rectified) for use in a geographic information system (GIS). These rectified images were created for the purpose of visually comparing published geologic maps with other geospatial information. However, they cannot be queried or used for spatial analysis thus limiting their use in a GIS. The 42 georeferenced images included in this report range in scale from 1:250,000 to 1:100,000.Tagged Image Format (TIFF) images of the maps were generated by scanning an original paper map or converting previously published Portable Document Format (PDF) images or Encapsulated Post-Script (EPS) files. To reduce file size and minimize image overlap, the TIFF images were cropped, and then rectified using ArcMap? 8 and converted to MrSID? images. Information in the explanation and cross sections can be viewed in un-rectified images of the original publications that are included with this report. In addition, the text in the map unit description along with the unit name, map label, and a citation are organized in a searchable PDF file.

  5. CMOS-Compatible Room-Temperature Rectifier Toward Terahertz Radiation Detection

    NASA Astrophysics Data System (ADS)

    Varlamava, Volha; De Amicis, Giovanni; Del Monte, Andrea; Perticaroli, Stefano; Rao, Rosario; Palma, Fabrizio

    2016-08-01

    In this paper, we present a new rectifying device, compatible with the technology of CMOS image sensors, suitable for implementing a direct-conversion detector operating at room temperature for operation at up to terahertz frequencies. The rectifying device can be obtained by introducing some simple modifications of the charge-storage well in conventional CMOS integrated circuits, making the proposed solution easy to integrate with the existing imaging systems. The rectifying device is combined with the different elements of the detector, composed of a 3D high-performance antenna and a charge-storage well. In particular, its position just below the edge of the 3D antenna takes maximum advantage of the high electric field concentrated by the antenna itself. In addition, the proposed structure ensures the integrity of the charge-storage well of the detector. In the structure, it is not necessary to use very scaled and costly technological nodes, since the CMOS transistor only provides the necessary integrated readout electronics. On-wafer measurements of RF characteristics of the designed junction are reported and discussed. The overall performances of the entire detector in terms of noise equivalent power (NEP) are evaluated by combining low-frequency measurements of the rectifier with numerical simulations of the 3D antenna and the semiconductor structure at 1 THz, allowing prediction of the achievable NEP.

  6. Analysis of the operation of a packed rectifying column in the process of binary mixture separation

    NASA Astrophysics Data System (ADS)

    Moshinskii, A. I.

    2013-09-01

    On the basis of a continuum mathematical model, the operation of a packed rectifying column in the stationary (continuous) and nonstationary (periodic) regimes in the process of binary mixture separation under certain conditions has been analyzed. We have considered examples of the realization of the above process, for which analytical expressions convenient for calculations have been obtained.

  7. Alkyl monolayer passivated metal-semiconductor diodes: 2: Comparison with native silicon oxide.

    PubMed

    Liu, Yong-Jun; Yu, Hua-Zhong

    2003-04-14

    To understand the electrical properties at passivated metal-semiconductor interfaces, two types of mercury-insulator-silicon (n-type) junctions, Hg\\C10H21-Si and Hg\\SiO2-Si, were fabricated and their current-voltage and capacitance-voltage characteristics compared. Both of them exhibited near-ideal rectifying characteristics with an excellent saturation current at reverse bias, which is in contrast to the previously reported ohmic behavior of an unmodified mercury-silicon junction. The experimental results also indicated that the n-decyl monolayer passivated junction possesses a higher effective barrier height, a lower ideality factor (that is, closer to unity), and better reproducibility than that of native silicon oxide. In addition, the dopant density and build-in potential, extracted from capacitance-voltage measurements of these passivated mercury-silicon junctions, revealed that alkyl monolayer derivatization does not alter the intrinsic properties of the silicon substrate. The calculated surface state density at the alkyl monolayer\\silicon interface is lower than that of the silicon oxide\\silicon interface. The present study increases the possibility of using advanced organic materials as ultrathin insulator layers for miniaturized, silicon-based microelectronic devices.

  8. Ultrafast laser functionalized rare phased gold-silicon/silicon oxide nanostructured hybrid biomaterials.

    PubMed

    Premnath, P; Tan, B; Venkatakrishnan, K

    2015-12-01

    We introduce a hybrid nanostructured biomaterial that is a combination of rare phases of immiscible gold and silicon oxide, functionalized via ultrafast laser synthesis. For the first time, we show cancer controlling properties of rare phases of gold silicides, which include Au7Si, Au5Si, Au0.7Si2.3 and Au8Si2. Conventionally, pure forms of gold and silicon/silicon oxide are extensively employed in targeted therapy and drug delivery systems due to their unique properties. While silicon and silicon oxide nanoparticles have shown biocompatibility, gold nanoparticles show conflicting results based on their size and material properties. Several studies have shown that gold and silicon combinations produce cell controlling properties, however, these studies were not able to produce a homogenous combination of gold and silicon, owing to its immiscibility. A homogenous combination of gold and silicon may potentially enable properties that have not previously been reported. We describe rare phased gold-silicon oxide nanostructured hybrid biomaterials and its unique cancer controlling properties, owing to material properties, concentration, size and density. The gold-silicon oxide nanostructured hybrid is composed of individual gold-silicon oxide nanoparticles in various concentrations of gold and silicon, some nanoparticles possess a gold-core and silicon-shell like structure. The individual nanoparticles are bonded together forming a three dimensional nanostructured hybrid. The interaction of the nanostructured hybrids with cervical cancer cells showed a 96% reduction in 24h. This engineered nanostructured hybrid biomaterial presents significant potential due to the combination of immiscible gold and silicon oxide in varying phases and can potentially satiate the current vacuum in cancer therapy.

  9. Ultrafast laser functionalized rare phased gold-silicon/silicon oxide nanostructured hybrid biomaterials.

    PubMed

    Premnath, P; Tan, B; Venkatakrishnan, K

    2015-12-01

    We introduce a hybrid nanostructured biomaterial that is a combination of rare phases of immiscible gold and silicon oxide, functionalized via ultrafast laser synthesis. For the first time, we show cancer controlling properties of rare phases of gold silicides, which include Au7Si, Au5Si, Au0.7Si2.3 and Au8Si2. Conventionally, pure forms of gold and silicon/silicon oxide are extensively employed in targeted therapy and drug delivery systems due to their unique properties. While silicon and silicon oxide nanoparticles have shown biocompatibility, gold nanoparticles show conflicting results based on their size and material properties. Several studies have shown that gold and silicon combinations produce cell controlling properties, however, these studies were not able to produce a homogenous combination of gold and silicon, owing to its immiscibility. A homogenous combination of gold and silicon may potentially enable properties that have not previously been reported. We describe rare phased gold-silicon oxide nanostructured hybrid biomaterials and its unique cancer controlling properties, owing to material properties, concentration, size and density. The gold-silicon oxide nanostructured hybrid is composed of individual gold-silicon oxide nanoparticles in various concentrations of gold and silicon, some nanoparticles possess a gold-core and silicon-shell like structure. The individual nanoparticles are bonded together forming a three dimensional nanostructured hybrid. The interaction of the nanostructured hybrids with cervical cancer cells showed a 96% reduction in 24h. This engineered nanostructured hybrid biomaterial presents significant potential due to the combination of immiscible gold and silicon oxide in varying phases and can potentially satiate the current vacuum in cancer therapy. PMID:26539809

  10. Making silicon stronger.

    SciTech Connect

    Boyce, Brad Lee

    2010-11-01

    Silicon microfabrication has seen many decades of development, yet the structural reliability of microelectromechanical systems (MEMS) is far from optimized. The fracture strength of Si MEMS is limited by a combination of poor toughness and nanoscale etch-induced defects. A MEMS-based microtensile technique has been used to characterize the fracture strength distributions of both standard and custom microfabrication processes. Recent improvements permit 1000's of test replicates, revealing subtle but important deviations from the commonly assumed 2-parameter Weibull statistical model. Subsequent failure analysis through a combination of microscopy and numerical simulation reveals salient aspects of nanoscale flaw control. Grain boundaries, for example, suffer from preferential attack during etch-release thereby forming failure-critical grain-boundary grooves. We will discuss ongoing efforts to quantify the various factors that affect the strength of polycrystalline silicon, and how weakest-link theory can be used to make worst-case estimates for design.

  11. Silicon Detectors

    NASA Astrophysics Data System (ADS)

    Sadrozinski, Hartmut

    2014-03-01

    The use of silicon detectors has experienced an exponential growth in accelerator and space based experiments, similar to trends in the semiconductor industry as a whole, usually paraphrased as ``Moore's Law.'' Some of the essentials for this phenomenon will be presented, together with examples of the exciting science results which it enabled. With the establishment of a ``semiconductor culture'' in universities and laboratories around the world, an increased understanding of the sensors results in thinner, faster, more radiation-resistant detectors, spawning an amazing wealth of new technologies and applications, which will be the main subject of the presentation.

  12. An RF energy harvester system using UHF micropower CMOS rectifier based on a diode connected CMOS transistor.

    PubMed

    Shokrani, Mohammad Reza; Khoddam, Mojtaba; Hamidon, Mohd Nizar B; Kamsani, Noor Ain; Rokhani, Fakhrul Zaman; Shafie, Suhaidi Bin

    2014-01-01

    This paper presents a new type diode connected MOS transistor to improve CMOS conventional rectifier's performance in RF energy harvester systems for wireless sensor networks in which the circuits are designed in 0.18  μm TSMC CMOS technology. The proposed diode connected MOS transistor uses a new bulk connection which leads to reduction in the threshold voltage and leakage current; therefore, it contributes to increment of the rectifier's output voltage, output current, and efficiency when it is well important in the conventional CMOS rectifiers. The design technique for the rectifiers is explained and a matching network has been proposed to increase the sensitivity of the proposed rectifier. Five-stage rectifier with a matching network is proposed based on the optimization. The simulation results shows 18.2% improvement in the efficiency of the rectifier circuit and increase in sensitivity of RF energy harvester circuit. All circuits are designed in 0.18 μm TSMC CMOS technology. PMID:24782680

  13. Silicon Micromachined Microlens Array for THz Antennas

    NASA Technical Reports Server (NTRS)

    Lee, Choonsup; Chattopadhyay, Goutam; Mehdi, IImran; Gill, John J.; Jung-Kubiak, Cecile D.; Llombart, Nuria

    2013-01-01

    5 5 silicon microlens array was developed using a silicon micromachining technique for a silicon-based THz antenna array. The feature of the silicon micromachining technique enables one to microfabricate an unlimited number of microlens arrays at one time with good uniformity on a silicon wafer. This technique will resolve one of the key issues in building a THz camera, which is to integrate antennas in a detector array. The conventional approach of building single-pixel receivers and stacking them to form a multi-pixel receiver is not suited at THz because a single-pixel receiver already has difficulty fitting into mass, volume, and power budgets, especially in space applications. In this proposed technique, one has controllability on both diameter and curvature of a silicon microlens. First of all, the diameter of microlens depends on how thick photoresist one could coat and pattern. So far, the diameter of a 6- mm photoresist microlens with 400 m in height has been successfully microfabricated. Based on current researchers experiences, a diameter larger than 1-cm photoresist microlens array would be feasible. In order to control the curvature of the microlens, the following process variables could be used: 1. Amount of photoresist: It determines the curvature of the photoresist microlens. Since the photoresist lens is transferred onto the silicon substrate, it will directly control the curvature of the silicon microlens. 2. Etching selectivity between photoresist and silicon: The photoresist microlens is formed by thermal reflow. In order to transfer the exact photoresist curvature onto silicon, there needs to be etching selectivity of 1:1 between silicon and photoresist. However, by varying the etching selectivity, one could control the curvature of the silicon microlens. The figure shows the microfabricated silicon microlens 5 x5 array. The diameter of the microlens located in the center is about 2.5 mm. The measured 3-D profile of the microlens surface has a

  14. Control of optical bandgap energy and optical absorption coefficient by geometric parameters in sub-10 nm silicon-nanodisc array structure

    NASA Astrophysics Data System (ADS)

    Fairuz Budiman, Mohd; Hu, Weiguo; Igarashi, Makoto; Tsukamoto, Rikako; Isoda, Taiga; Itoh, Kohei M.; Yamashita, Ichiro; Murayama, Akihiro; Okada, Yoshitaka; Samukawa, Seiji

    2012-02-01

    A sub-10 nm, high-density, periodic silicon-nanodisc (Si-ND) array has been fabricated using a new top-down process, which involves a 2D array bio-template etching mask made of Listeria-Dps with a 4.5 nm diameter iron oxide core and damage-free neutral-beam etching (Si-ND diameter: 6.4 nm). An Si-ND array with an SiO2 matrix demonstrated more controllable optical bandgap energy due to the fine tunability of the Si-ND thickness and diameter. Unlike the case of shrinking Si-ND thickness, the case of shrinking Si-ND diameter simultaneously increased the optical absorption coefficient and the optical bandgap energy. The optical absorption coefficient became higher due to the decrease in the center-to-center distance of NDs to enhance wavefunction coupling. This means that our 6 nm diameter Si-ND structure can satisfy the strict requirements of optical bandgap energy control and high absorption coefficient for achieving realistic Si quantum dot solar cells.

  15. Microfluidic assembly of monodisperse multistage pH-responsive polymer/porous silicon composites for precisely controlled multi-drug delivery.

    PubMed

    Liu, Dongfei; Zhang, Hongbo; Herranz-Blanco, Bárbara; Mäkilä, Ermei; Lehto, Vesa-Pekka; Salonen, Jarno; Hirvonen, Jouni; Santos, Hélder A

    2014-05-28

    We report an advanced drug delivery platform for combination chemotherapy by concurrently incorporating two different drugs into microcompoistes with ratiometric control over the loading degree. Atorvastatin and celecoxib were selected as model drugs due to their different physicochemical properties and synergetic effect on colorectal cancer prevention and inhibition. To be effective in colorectal cancer prevention and inhibition, the produced microcomposite contained hypromellose acetate succinate, which is insoluble in acidic conditions but highly dissolving at neutral or alkaline pH conditions. Taking advantage of the large pore volume of porous silicon (PSi), atorvastatin was firstly loaded into the PSi matrix, and then encapsulated into the pH-responsive polymer microparticles containing celecoxib by microfluidics in order to obtain multi-drug loaded polymer/PSi microcomposites. The prepared microcomposites showed monodisperse size distribution, multistage pH-response, precise ratiometric controlled loading degree towards the simultaneously loaded drug molecules, and tailored release kinetics of the loaded cargos. This attractive microcomposite platform protects the payloads from being released at low pH-values, and enhances their release at higher pH-values, which can be further used for colon cancer prevention and treatment. Overall, the pH-responsive polymer/PSi-based microcomposite can be used as a universal platform for the delivery of different drug molecules for combination therapy.

  16. Large area silicon sheet by EFG

    NASA Technical Reports Server (NTRS)

    1977-01-01

    Some hypotheses to explain both of these features are advanced and the possible implications for solar cell performance are touched upon. The multiple ribbon growth system has shown a number of flaws with respect to the reliability of the basic furnace design. These definitely need to be rectified before any significant demonstration of multiple ribbon growth can proceed. The cartridges, however, have performed quite well. The work on 3" cartridge design and automatic controls has proceeded nearly on schedule and the report contains a detailed description of the approach and the equipment to be used for automatic control of ribbon growth.

  17. Asymmetric Die Grows Purer Silicon Ribbon

    NASA Technical Reports Server (NTRS)

    Kalejs, J. P.; Chalmers, B.; Surek, T.

    1983-01-01

    Concentration of carbide impurities in silicon ribbon is reduced by growing crystalline ribbon with die one wall higher than other. Height difference controls shape of meniscus at liquid/crystal interface and concentrates silicon carbide impurity near one of broad faces. Opposite face is left with above-average purity. Significantly improves efficiency of solar cells made from ribbon.

  18. Silicon limitation on primary production and its destiny in Jiaozhou Bay, China. V: Silicon deficit process

    NASA Astrophysics Data System (ADS)

    Yang, Dongfang; Gao, Zhenhui; Wang, Peigang; Sun, Peiyan; Liu, Shuang

    2005-06-01

    Silicon is a necessary nutrient for diatoms, silicon uptake in diatom reproduction decreased seawater silicon content. This paper clarified the characteristics of silicon transferring in the sea, which plays an important role in phytoplankton growth, zooplankton graze and marine ecosystem. Analysis revealed that silicate is supplied by terrestrial sources, through plankton uptake, death, and eventually deposits to the sea bottom, and cannot diffuse upward. This is a general silicon deficit process. Many global marine waters showed the same silicon transfer route: land→silicon biogeochemical process→sea bottom. River flow brings abundant silicate into marine waters, silicate concentration in the waters decreased in the distance away from the river estuaries. In discussion of silicon characteristics and its transfer route, it was considred that the main factor controlling the mechanism of diatom and non-diatom red tides occurrence is silicon, and the changes in silicon source. Human activities, such as sea-route cutting by building embankment and dam, and silicon supplement by the sea, such as sandstorm, rainstorm and storm tide, have largely impaired the earth ecosystem and hugely threatened the human existence. It is suggested in this paper that man should resume the original face of the Si input into the sea to keep natural ecosystem in sustainable pattern.

  19. Low-temperature linear thermal rectifiers based on Coriolis forces.

    PubMed

    Suwunnarat, Suwun; Li, Huanan; Fleischmann, Ragnar; Kottos, Tsampikos

    2016-04-01

    We demonstrate that a three-terminal harmonic symmetric chain in the presence of a Coriolis force, produced by a rotating platform that is used to place the chain, can produce thermal rectification. The direction of heat flow is reconfigurable and controlled by the angular velocity Ω of the rotating platform. A simple three-terminal triangular lattice is used to demonstrate the proposed principle.

  20. Low-temperature linear thermal rectifiers based on Coriolis forces

    NASA Astrophysics Data System (ADS)

    Suwunnarat, Suwun; Li, Huanan; Fleischmann, Ragnar; Kottos, Tsampikos

    2016-04-01

    We demonstrate that a three-terminal harmonic symmetric chain in the presence of a Coriolis force, produced by a rotating platform that is used to place the chain, can produce thermal rectification. The direction of heat flow is reconfigurable and controlled by the angular velocity Ω of the rotating platform. A simple three-terminal triangular lattice is used to demonstrate the proposed principle.

  1. Controllability analysis of thermally coupled distillation systems

    SciTech Connect

    Hernandez, S.; Jimenez, A.

    1999-10-01

    A comparison of the controllability properties of three thermally coupled distillation sequences (Petlyuk, sequence with side rectifier, and sequence with side stripper) using singular value decomposition is developed. Those properties are also compared to the energy consumption required for separating ternary mixtures. The parameters obtained via singular value decomposition show that sequences with a side rectifier or a side stripper have better control properties than the Petlyuk system, although the Petlyuk scheme has lower energy requirements than the systems with side columns.

  2. Upgrading Metallurgical-Grade Silicon

    NASA Technical Reports Server (NTRS)

    Woerner, L. M.; Moore, E. B.

    1985-01-01

    Closed-loop process produces semiconductor-grade silicon. Metallurgical-grade silicon converted to ultrapure silicon by reacting with hydrogen and silicon tetrahalide to form trihalosilane, purifying this intermediate and again decomposing to high purity silicon in third stage. Heterogeneously and homogeneously nucleated polycrystalline silicon used in semiconductor device applications and in silicon photovoltaic solar cell fabrication.

  3. Rectifying behavior in nitrogen-doped zigzag single-walled carbon nanotube junctions

    NASA Astrophysics Data System (ADS)

    Zhao, P.; Liu, D. S.; Li, S. J.; Chen, G.

    2012-11-01

    Using first-principles density functional theory and non-equilibrium Green's function formalism for quantum transport calculation, we have investigated the electronic transport properties of (8,0), (9,0) and (13,0) zigzag single-walled carbon nanotube junctions with one undoped and one nitrogen-doped zigzag carbon nanotube electrode. Our results show that the transport properties are strongly dependent on the magnitude of energy gap of carbon nanotube. Large rectifying behavior can be obtained in the junction with large energy gap. The observed rectifying behavior are explained in terms of the evolution of the transmission spectra and energy band structures with applied bias voltage combined with molecular projected self-consistent Hamiltonian eigenstates analysis.

  4. Hydrogen Sulfide Regulates Inward-Rectifying K+ Channels in Conjunction with Stomatal Closure1[OPEN

    PubMed Central

    Papanatsiou, Maria; Scuffi, Denisse; Blatt, Michael R.; García-Mata, Carlos

    2015-01-01

    Hydrogen sulfide (H2S) is the third biological gasotransmitter, and in animals, it affects many physiological processes by modulating ion channels. H2S has been reported to protect plants from oxidative stress in diverse physiological responses. H2S closes stomata, but the underlying mechanism remains elusive. Here, we report the selective inactivation of current carried by inward-rectifying K+ channels of tobacco (Nicotiana tabacum) guard cells and show its close parallel with stomatal closure evoked by submicromolar concentrations of H2S. Experiments to scavenge H2S suggested an effect that is separable from that of abscisic acid, which is associated with water stress. Thus, H2S seems to define a unique and unresolved signaling pathway that selectively targets inward-rectifying K+ channels. PMID:25770153

  5. A High Power Density Single-Phase PWM Rectifier With Active Ripple Energy Storage

    SciTech Connect

    Wang, Ruxi; Wang, Fei; Boroyevich, Dushan; Burgos, Rolando; Lai, Rixin; Ning, Puqi; Rajashekara, Kaushik

    2011-01-01

    It is well known that single-phase pulse width modulation rectifiers have second-order harmonic currents and corresponding ripple voltages on the dc bus. The low-frequency harmonic current is normally filtered using a bulk capacitor in the bus, which results in low power density. However, pursuing high power density in converter design is a very important goal in the aerospace applications. This paper studies methods for reducing the energy storage capacitor for single-phase rectifiers. The minimum ripple energy storage requirement is derived independently of a specific topology. Based on theminimum ripple energy requirement, the feasibility of the active capacitor s reduction schemes is verified. Then, we propose a bidirectional buck boost converter as the ripple energy storage circuit, which can effectively reduce the energy storage capacitance. The analysis and design are validated by simulation and experimental results.

  6. Control and expression of -NH2, -SH, -COOH and SiO2 on the surface of silicon carbide quantum dots

    NASA Astrophysics Data System (ADS)

    Mwania, Munuve; Aguirre-Medel, Susana; Kroll, Peter

    2015-03-01

    We present simple protocols for reliably tailoring the surfaces of zinc blende silicon carbide quantum dots (β-SiC QDs). The SiC QDs are synthesized via photo-assisted electrochemical corrosion of bulk powders at different temperatures and time scales. After washing the residual acid and resuspending in H2O, the surfaces of SiC QDs were controllably coated with four different functional groups, specifically -NH2, -SH, and -COOH and -SiO2. We began by covalently attaching primary amines (-NH2) to the QD surface. The amine terminations were then converted to amine/thiolate (-NH2/SH) and amine/carboxylate (-NH2/COOH) functional groups. SiO2 shells around SiC QDs (to create SiC@SiO2nano-structures) were grown using a TEOS-mediated Stöber method. The presence of amine and thiol groups was confirmed by fluoresceamine assay test, X-ray photoelectron spectroscopy (XPS) and infrared spectroscopy (FTIR). While a negative fluoresceamine assay test confirmed the replacement of amine groups by thiol groups, the thiolation of the surface was also confirmed through Ellman's assay, XPS and FTIR. The presence of the SiO2 shells was examined using transmission electron microscopy and XPS. Our results open up possibilities to manipulate SiC QDs for various applications.

  7. Precise control of photoluminescence of silicon-vacancy color centers in homoepitaxial single-crystal diamond: evaluation of efficiency of Si doping from gas phase

    NASA Astrophysics Data System (ADS)

    Ralchenko, Victor; Sedov, Vadim; Saraykin, Vladimir; Bolshakov, Andrey; Zavedeev, Evgeny; Ashkinazi, Evgeny; Khomich, Andrew

    2016-09-01

    Ability to precisely control the Si-related color center abundance in diamond is important for the use of silicon-vacancy (SiV) defects with bright photoluminescence (PL) in quantum information technologies and optical biomarkers. Here, we evaluated the efficiency of Si incorporation in (100) plane of homoepitaxial diamond layers upon in situ doping by adding silane SiH4 in the course of diamond chemical vapor deposition in microwave plasma using CH4-H2 mixtures. Both the Si concentration in the doped samples, as determined by secondary ion mass spectrometry, and PL intensity of SiV centers at 738 nm wavelength, measured at excitation wavelength of 473 nm, demonstrate a linear increase with silane content in feed gas in the range. The incorporation efficiency f, defined as the ratio of Si concentration in diamond to that in gas, f = [Si/C]dia/[Si/C]gas is found to be (1.1 ± 0.5) × 10-3 for the silane concentrations explored, [SiH4/CH4] < 0.7 %; thus, the Si atoms are accommodated in (100) diamond face easier than nitrogen and phosphorus, but more difficult than boron. This finding allows a tailoring of the Si content and photoluminescence intensity of SiV centers in in situ doped CVD diamond.

  8. Thin silicon solar cells

    NASA Astrophysics Data System (ADS)

    Hall, R. B.; Bacon, C.; Direda, V.; Ford, D. H.; Ingram, A. E.; Cotter, J.; Hughes-Lampros, T.; Rand, J. A.; Ruffins, T. R.; Barnett, A. M.

    1992-12-01

    The silicon-film design achieves high performance by using a dun silicon layer and incorporating light trapping. Optimally designed thin crystalline solar cells (less than 50 microns thick) have performance advantages over conventional thick devices. The high-performance silicon-film design employs a metallurgical barrier between the low-cost substrate and the thin silicon layer. Light trapping properties of silicon-film on ceramic solar cells are presented and analyzed. Recent advances in process development are described here.

  9. Thin silicon solar cells

    SciTech Connect

    Hall, R.B.; Bacon, C.; DiReda, V.; Ford, D.H.; Ingram, A.E.; Cotter, J.; Hughes-Lampros, T.; Rand, J.A.; Ruffins, T.R.; Barnett, A.M.

    1992-12-01

    The silicon-film design achieves high performance by using a dun silicon layer and incorporating light trapping. Optimally designed thin crystalline solar cells (<50 microns thick) have performance advantages over conventional thick devices. The high-performance silicon-film design employs a metallurgical barrier between the low-cost substrate and the thin silicon layer. Light trapping properties of silicon-film on ceramic solar cells are presented and analyzed. Recent advances in process development are described here.

  10. The terrestrial magnetosphere: a half-wave rectifier of the interplanetary electric field.

    PubMed

    Burton, R K; McPherron, R L; Russell, C T

    1975-08-29

    A study of geomagnetic disturbances during 1967 and 1968, for which in situ solar wind observations are available, reveals that the magnetosphere acts as a half-wave rectifier of the interplanetary electric field. The rate of injection of energy into the magnetosphere, as inferred from the strength of the disturbance, is approximately linearly proportional to the component of the electric field from dawn to dusk but is effectively zero if the electricfield has a component from dusk to dawn. PMID:17792538

  11. Fundamental harmonic of ripples in symmetrical Cockcroft-Walton cascade rectifying circuit

    NASA Astrophysics Data System (ADS)

    Zhang, Haibo; Takaoka, Akio

    1996-09-01

    On the basis of a conventional Cockcroft-Walton (C-W) cascade rectifying circuit, an expression is derived for the fundamental harmonic of ripples due to asymmetry of driving voltage in a symmetrical C-W circuit. The expression is validated from good agreement with experimental results of both a low-voltage model circuit and a high-voltage circuit used in an ultrahigh-voltage electron microscope.

  12. The terrestrial magnetosphere: a half-wave rectifier of the interplanetary electric field.

    PubMed

    Burton, R K; McPherron, R L; Russell, C T

    1975-08-29

    A study of geomagnetic disturbances during 1967 and 1968, for which in situ solar wind observations are available, reveals that the magnetosphere acts as a half-wave rectifier of the interplanetary electric field. The rate of injection of energy into the magnetosphere, as inferred from the strength of the disturbance, is approximately linearly proportional to the component of the electric field from dawn to dusk but is effectively zero if the electricfield has a component from dusk to dawn.

  13. UV/ozone assisted local graphene (p)/ZnO(n) heterojunctions as a nanodiode rectifier

    NASA Astrophysics Data System (ADS)

    Sahatiya, Parikshit; Badhulika, Sushmee

    2016-07-01

    Here we report the fabrication of a novel graphene/ZnO nanodiode by UV/ozone assisted oxidation of graphene and demonstrate its application as a half-wave rectifier to generate DC voltage. The method involves the use of electrospinning for one-step in situ synthesis and alignment of single Gr/ZnO nanocomposite across metal electrodes. On subsequent UV illumination, graphene oxidizes, which induces p type doping and ZnO being an n type semiconductor, thus resulting in the formation of a nanodiode. The as-fabricated device shows strong non-linear current–voltage characteristic similar to that of conventional semiconductor p–n junction diodes. Excellent rectifying behavior with a rectification ratio of ~103 was observed and the nanodiodes were found to exhibit long-term repeatability in their performance. Ideality factor and barrier height, as calculated by the thermionic emission model, were found to be 1.6 and 0.504 eV respectively. Due to the fact that diodes are the basic building blocks in the electronics and semiconductor industry, the successful fabrication of these nanodiodes based on UV assisted p type doping of graphene indicates that this approach can be used for developing highly scalable and efficient components for nanoelectronics, such as rectifiers and logic gates that find applications in numerous fields.

  14. Multi-Service Highly Sensitive Rectifier for Enhanced RF Energy Scavenging

    PubMed Central

    Shariati, Negin; Rowe, Wayne S. T.; Scott, James R.; Ghorbani, Kamran

    2015-01-01

    Due to the growing implications of energy costs and carbon footprints, the need to adopt inexpensive, green energy harvesting strategies are of paramount importance for the long-term conservation of the environment and the global economy. To address this, the feasibility of harvesting low power density ambient RF energy simultaneously from multiple sources is examined. A high efficiency multi-resonant rectifier is proposed, which operates at two frequency bands (478–496 and 852–869 MHz) and exhibits favorable impedance matching over a broad input power range (−40 to −10 dBm). Simulation and experimental results of input reflection coefficient and rectified output power are in excellent agreement, demonstrating the usefulness of this innovative low-power rectification technique. Measurement results indicate an effective efficiency of 54.3%, and an output DC voltage of 772.8 mV is achieved for a multi-tone input power of −10 dBm. Furthermore, the measured output DC power from harvesting RF energy from multiple services concurrently exhibits a 3.14 and 7.24 fold increase over single frequency rectification at 490 and 860 MHz respectively. Therefore, the proposed multi-service highly sensitive rectifier is a promising technique for providing a sustainable energy source for low power applications in urban environments. PMID:25951137

  15. Cloning, functional expression and brain localization of a novel unconventional outward rectifier K+ channel.

    PubMed Central

    Fink, M; Duprat, F; Lesage, F; Reyes, R; Romey, G; Heurteaux, C; Lazdunski, M

    1996-01-01

    Human TWIK-1, which has been cloned recently, is a new structural type of weak inward rectifier K+ channel. Here we report the structural and functional properties of TREK-1, a mammalian TWIK-1-related K+ channel. Despite a low amino acid identity between TWIK-1 and TREK-1 (approximately 28%), both channel proteins share the same overall structural arrangement consisting of two pore-forming domains and four transmembrane segments (TMS). This structural similarity does not give rise to a functional analogy. K+ currents generated by TWIK-1 are inwardly rectifying while K+ currents generated by TREK-1 are outwardly rectifying. These channels have a conductance of 14 pS. TREK-1 currents are insensitive to pharmacological agents that block TWIK-1 activity such as quinine and quinidine. Extensive inhibitions of TREK-1 activity are observed after activation of protein kinases A and C. TREK-1 currents are sensitive to extracellular K+ and Na+. TREK-1 mRNA is expressed in most tissues and is particularly abundant in the lung and in the brain. Its localization in this latter tissue has been studied by in situ hybridization. TREK-1 expression is high in the olfactory bulb, hippocampus and cerebellum. These results provide the first evidence for the existence of a K+ channel family with four TMS and two pore domains in the nervous system of mammals. They also show that different members in this structural family can have totally different functional properties. Images PMID:9003761

  16. Microfluidic rectifier based on poly(dimethylsiloxane) membrane and its application to a micropump

    PubMed Central

    Wang, Yao-Nan; Tsai, Chien-Hsiung; Fu, Lung-Ming; Lin Liou, Lung-Kai

    2013-01-01

    A microfluidic rectifier incorporating an obstructed microchannel and a PDMS membrane is proposed. During forward flow, the membrane deflects in the upward direction; thereby allowing the fluid to pass over the obstacle. Conversely, during reverse flow, the membrane seals against the obstacle, thereby closing the channel and preventing flow. It is shown that the proposed device can operate over a wide pressure range by increasing or decreasing the membrane thickness as required. A microfluidic pump is realized by integrating the rectifier with a simple stepper motor mechanism. The experimental results show that the pump can achieve a vertical left height of more than 2 m. Moreover, it is shown that a maximum flow rate of 6.3 ml/min can be obtained given a membrane thickness of 200 μm and a motor velocity of 80 rpm. In other words, the proposed microfluidic rectifier not only provides an effective means of preventing reverse flow but also permits the realization of a highly efficient microfluidic pump. PMID:24404051

  17. UV/ozone assisted local graphene (p)/ZnO(n) heterojunctions as a nanodiode rectifier

    NASA Astrophysics Data System (ADS)

    Sahatiya, Parikshit; Badhulika, Sushmee

    2016-07-01

    Here we report the fabrication of a novel graphene/ZnO nanodiode by UV/ozone assisted oxidation of graphene and demonstrate its application as a half-wave rectifier to generate DC voltage. The method involves the use of electrospinning for one-step in situ synthesis and alignment of single Gr/ZnO nanocomposite across metal electrodes. On subsequent UV illumination, graphene oxidizes, which induces p type doping and ZnO being an n type semiconductor, thus resulting in the formation of a nanodiode. The as-fabricated device shows strong non-linear current-voltage characteristic similar to that of conventional semiconductor p-n junction diodes. Excellent rectifying behavior with a rectification ratio of ~103 was observed and the nanodiodes were found to exhibit long-term repeatability in their performance. Ideality factor and barrier height, as calculated by the thermionic emission model, were found to be 1.6 and 0.504 eV respectively. Due to the fact that diodes are the basic building blocks in the electronics and semiconductor industry, the successful fabrication of these nanodiodes based on UV assisted p type doping of graphene indicates that this approach can be used for developing highly scalable and efficient components for nanoelectronics, such as rectifiers and logic gates that find applications in numerous fields.

  18. Decrease in an Inwardly Rectifying Potassium Conductance in Mouse Mammary Secretory Cells after Forced Weaning

    PubMed Central

    Kamikawa, Akihiro; Sugimoto, Shota; Ichii, Osamu; Kondoh, Daisuke

    2015-01-01

    Mammary glands are physiologically active in female mammals only during nursing. Immediately after weaning, most lactation-related genes are downregulated and milk production ceases. In our previous study, we have detected an inwardly rectifying potassium channel (Kir) 2.1-like current in mammary secretory (MS) cells freshly isolated from lactating mice. This current is highly sensitive to external Ba2+. The potassium permeability of the Kir channels may contribute to the secretion and/or preservation of ions in milk. We hypothesized that the functions of the Kir channels in MS cells are regulated after weaning. To test this hypothesis, we examined the effect of forced weaning on the Ba2+-sensitive Kir current and Kir2.1 expression in the mouse mammary glands. Twenty-four hours after weaning, the lumina of mammary acini were histologically enlarged by milk accumulation. The whole-cell patch-clamp analyses showed that the Ba2+-sensitive Kir current in the post-weaning MS cells was smaller than in the lactating MS cells. The inward conductances of the current in the lactating and post-weaning cells were 4.25 ± 0.77 and 0.93 ± 0.34 nS, respectively. Furthermore, real-time PCR and Western blot analyses showed that Kir2.1 mRNA and protein expression decreased in the post-weaning mammary gland (mRNA, 90% reduction; protein, 47% reduction). Moreover, the local milk accumulation caused by teat sealing decreased Kir conductance in MS cells (2.74 ± 0.45 and 0.36 ± 0.27 nS for control and sealed mammary glands, respectively). This was concomitant with the reduction in the Kir2.1 mRNA expression. Our results suggest that milk stasis after weaning immediately decreases the Kir conductance in MS cells. This decrease in the Kir conductance may be partly caused by the reduction in the Kir2.1 mRNA and protein expression. These alterations during the post-weaning period may be involved in the cessation of ion secretion and/or preservation in the milk. PMID:26484867

  19. Point defects in silicon carbide as a promising basis for spectroscopy of single defects with controllable quantum states at room temperature

    NASA Astrophysics Data System (ADS)

    Soltamov, V. A.; Tolmachev, D. O.; Il'in, I. V.; Astakhov, G. V.; Dyakonov, V. V.; Soltamova, A. A.; Baranov, P. G.

    2015-05-01

    The spin and optical properties of silicon vacancy defects in silicon carbide of the hexagonal 6 H polytype have been investigated using photoluminescence, electron paramagnetic resonance, and X-band optically detected magnetic resonance. It has been shown that different configurations of these defects can be used to create an optical alignment of their spin sublevels as in the case of low temperatures and at temperatures close to room temperature ( T = 293 K). The main specific feature of silicon vacancy centers in silicon carbide is that the zero-magnetic-field-splitting parameter of some centers remains constant with variations in the temperature, which indicates prospects for the use of these centers for quantum magnetometry. It has also been shown that a number of centers, on the contrary, are characterized by a strong dependence of the zero-magnetic-field-splitting parameter on the temperature, which indicates prospects for the use of these centers as temperature sensors.

  20. Buried oxide layer in silicon

    DOEpatents

    Sadana, Devendra Kumar; Holland, Orin Wayne

    2001-01-01

    A process for forming Silicon-On-Insulator is described incorporating the steps of ion implantation of oxygen into a silicon substrate at elevated temperature, ion implanting oxygen at a temperature below 200.degree. C. at a lower dose to form an amorphous silicon layer, and annealing steps to form a mixture of defective single crystal silicon and polycrystalline silicon or polycrystalline silicon alone and then silicon oxide from the amorphous silicon layer to form a continuous silicon oxide layer below the surface of the silicon substrate to provide an isolated superficial layer of silicon. The invention overcomes the problem of buried isolated islands of silicon oxide forming a discontinuous buried oxide layer.

  1. Silicon Web Process Development

    NASA Technical Reports Server (NTRS)

    Duncan, C. S.; Seidensticker, R. G.; Hopkins, R. H.; Mchugh, J. P.; Hill, F. E.; Heimlich, M. E.; Driggers, J. M.

    1978-01-01

    Progress in the development of techniques to grow silicon web at 25 wq cm/min output rate is reported. Feasibility of web growth with simultaneous melt replenishment is discussed. Other factors covered include: (1) tests of aftertrimmers to improve web width; (2) evaluation of growth lid designs to raise speed and output rate; (3) tests of melt replenishment hardware; and (4) investigation of directed gas flow systems to control unwanted oxide deposition in the system and to improve convective cooling of the web. Compatibility with sufficient solar cell performance is emphasized.

  2. The interaction of molten silicon with silicon aluminum oxynitrides

    NASA Technical Reports Server (NTRS)

    Wills, R. R.; Sekercioglu, I.; Niesz, D. E.

    1980-01-01

    Silicon aluminum oxynitride solid solutions (sialons) based on beta-Si3N4 and Si2N2O behave differently in contact with molten silicon. The Si2N2O-based sialons convert to almost pure Si3N4, apparently through a two-step decomposition and solution-precipitation reaction, whereas the beta-Si3N4 sialons are preferentially attacked at the grain boundaries. The composition of the grain-boundary phase appears to control the rate of reaction.

  3. Long-term stability of neural prosthetic control signals from silicon cortical arrays in rhesus macaque motor cortex

    NASA Astrophysics Data System (ADS)

    Chestek, Cynthia A.; Gilja, Vikash; Nuyujukian, Paul; Foster, Justin D.; Fan, Joline M.; Kaufman, Matthew T.; Churchland, Mark M.; Rivera-Alvidrez, Zuley; Cunningham, John P.; Ryu, Stephen I.; Shenoy, Krishna V.

    2011-08-01

    Cortically-controlled prosthetic systems aim to help disabled patients by translating neural signals from the brain into control signals for guiding prosthetic devices. Recent reports have demonstrated reasonably high levels of performance and control of computer cursors and prosthetic limbs, but to achieve true clinical viability, the long-term operation of these systems must be better understood. In particular, the quality and stability of the electrically-recorded neural signals require further characterization. Here, we quantify action potential changes and offline neural decoder performance over 382 days of recording from four intracortical arrays in three animals. Action potential amplitude decreased by 2.4% per month on average over the course of 9.4, 10.4, and 31.7 months in three animals. During most time periods, decoder performance was not well correlated with action potential amplitude (p > 0.05 for three of four arrays). In two arrays from one animal, action potential amplitude declined by an average of 37% over the first 2 months after implant. However, when using simple threshold-crossing events rather than well-isolated action potentials, no corresponding performance loss was observed during this time using an offline decoder. One of these arrays was effectively used for online prosthetic experiments over the following year. Substantial short-term variations in waveforms were quantified using a wireless system for contiguous recording in one animal, and compared within and between days for all three animals. Overall, this study suggests that action potential amplitude declines more slowly than previously supposed, and performance can be maintained over the course of multiple years when decoding from threshold-crossing events rather than isolated action potentials. This suggests that neural prosthetic systems may provide high performance over multiple years in human clinical trials.

  4. Colloidal characterization of silicon nitride and silicon carbide

    NASA Technical Reports Server (NTRS)

    Feke, Donald L.

    1986-01-01

    The colloidal behavior of aqueous ceramic slips strongly affects the forming and sintering behavior and the ultimate mechanical strength of the final ceramic product. The colloidal behavior of these materials, which is dominated by electrical interactions between the particles, is complex due to the strong interaction of the solids with the processing fluids. A surface titration methodology, modified to account for this interaction, was developed and used to provide fundamental insights into the interfacial chemistry of these systems. Various powder pretreatment strategies were explored to differentiate between true surface chemistry and artifacts due to exposure history. The colloidal behavior of both silicon nitride and carbide is dominated by silanol groups on the powder surfaces. However, the colloid chemistry of silicon nitride is apparently influenced by an additional amine group. With the proper powder treatments, silicon nitride and carbide powder can be made to appear colloidally equivalent. The impact of these results on processing control will be discussed.

  5. Silicon Wafer Cleaning Using New Liquid Aerosol with Controlled Droplet Velocity and Size by Rotary Atomizer Method

    NASA Astrophysics Data System (ADS)

    Seike, Yoshiyuki; Miyachi, Keiji; Shibata, Tatsuo; Kobayashi, Yoshinori; Kurokawa, Syuhei; Doi, Toshiro

    2010-06-01

    A liquid aerosol, which sprays cleaning liquid with a carrier gas, is widely used for cleaning semiconductor devices. The liquid aerosol using a conventional two-fluid nozzle may cause pattern damage on the wafer. To resolve this problem, we have made a prototype new rotary atomizing two-fluid cleaning nozzle (RAC nozzle), which can control the velocity distribution and size distribution of flying liquid droplets separately. It was confirmed by measuring flying liquid droplets using a shadow Doppler particle analyzer system that the mean volumetric diameter of the droplets could be atomized to 20 µm or less at a rotational speed of the air turbine of 50,000 min-1 and that the mean velocity of the flying liquid droplets could be controlled in the range under 65 m/s independently. It was confirmed in a cleaning experiment using polystyrene latex (PSL) particles on a wafer that particle removal efficiency increased when shaping air pressure increased. Also, the particle removal efficiency was improved with the finer atomization promoted by a higher rotational speed of the air turbine.

  6. Silicon Wafer Cleaning Using New Liquid Aerosol with Controlled Droplet Velocity and Size by Rotary Atomizer Method

    NASA Astrophysics Data System (ADS)

    Yoshiyuki Seike,; Keiji Miyachi,; Tatsuo Shibata,; Yoshinori Kobayashi,; Syuhei Kurokawa,; Toshiro Doi,

    2010-06-01

    A liquid aerosol, which sprays cleaning liquid with a carrier gas, is widely used for cleaning semiconductor devices. The liquid aerosol using a conventional two-fluid nozzle may cause pattern damage on the wafer. To resolve this problem, we have made a prototype new rotary atomizing two-fluid cleaning nozzle (RAC nozzle), which can control the velocity distribution and size distribution of flying liquid droplets separately. It was confirmed by measuring flying liquid droplets using a shadow Doppler particle analyzer system that the mean volumetric diameter of the droplets could be atomized to 20 μm or less at a rotational speed of the air turbine of 50,000 min-1 and that the mean velocity of the flying liquid droplets could be controlled in the range under 65 m/s independently. It was confirmed in a cleaning experiment using polystyrene latex (PSL) particles on a wafer that particle removal efficiency increased when shaping air pressure increased. Also, the particle removal efficiency was improved with the finer atomization promoted by a higher rotational speed of the air turbine.

  7. Silicon material technology status

    NASA Astrophysics Data System (ADS)

    Lutwack, R.

    Silicon has been the basic element for the electronic and photovoltaic industries. The use of silicon as the primary element for terrestrial photovoltaic solar arrays is projected to continue. The reasons for this projection are related to the maturity of silicon technology, the ready availability of extremely pure silicon, the performance of silicon solar cells, and the considerable present investment in technology and manufacturing facilities. The technologies for producing semiconductor grade silicon and, to a lesser extent, refined metallurgical grade silicon are considered. It is pointed out that nearly all of the semiconductor grade silicon is produced by processes based on the Siemens deposition reactor, a technology developed 26 years ago. The state-of-the-art for producing silicon by this process is discussed. It is expected that efforts to reduce polysilicon process costs will continue.

  8. Purified silicon production system

    DOEpatents

    Wang, Tihu; Ciszek, Theodore F.

    2004-03-30

    Method and apparatus for producing purified bulk silicon from highly impure metallurgical-grade silicon source material at atmospheric pressure. Method involves: (1) initially reacting iodine and metallurgical-grade silicon to create silicon tetraiodide and impurity iodide byproducts in a cold-wall reactor chamber; (2) isolating silicon tetraiodide from the impurity iodide byproducts and purifying it by distillation in a distillation chamber; and (3) transferring the purified silicon tetraiodide back to the cold-wall reactor chamber, reacting it with additional iodine and metallurgical-grade silicon to produce silicon diiodide and depositing the silicon diiodide onto a substrate within the cold-wall reactor chamber. The two chambers are at atmospheric pressure and the system is open to allow the introduction of additional source material and to remove and replace finished substrates.

  9. Near-field radiative transfer based thermal rectification using doped silicon

    NASA Astrophysics Data System (ADS)

    Basu, Soumyadipta; Francoeur, Mathieu

    2011-03-01

    In this letter, we have designed a near-field thermal rectifier using a film and a bulk of doped silicon, with different doping levels, separated by a vacuum gap. We examine the origin of nonlinearities in thermal rectification associated with near-field heat transfer, and investigate closely the effects of varying the vacuum gap and the film thickness on rectification. For a 10 nm thick film, rectification greater than 0.5 is achieved for vacuum gaps varying from 1 nm to 50 nm with the hot and cold temperatures of the terminals of the rectifier being 400 K and 300 K, respectively. The results obtained from this study may benefit future research in thermal management and energy harvesting.

  10. Electrically controlled second-harmonic generation in silicon-compatible plasmonic slot waveguides: a new modulation scheme.

    PubMed

    Zhang, Jihua; Cassan, Eric; Zhang, Xinliang

    2014-07-01

    The possible realization of an active electro-optical control of the nonlinear second-harmonic generation (SHG) mechanism in a plasmonic slot waveguide is theoretically investigated. Both the conventional SHG and the electrically induced SHG are taken into account with a moderate pump power of 40 mW at the fundamental wavelength (1550 nm). The generated power of the second-harmonic frequency can be modulated by the applied voltage in a quadratic and almost linear form for centrosymmetric and noncentrosymmetric nonlinear polymers integrated in the slot, respectively. Converted power up to 140 μW within a short distance of only 16 μm is predicted for a voltage of 10 V. This mechanism may open a new route to realize high-speed advanced modulations or inversely to detect ultrafast electrical signals.

  11. Interfacing porous silicon with biomolecules

    NASA Astrophysics Data System (ADS)

    Sweetman, Martin J.; Graney, Sean D.; Voelcker, Nicolas H.

    2007-12-01

    The control of protein binding into nanostructured porous surfaces is highly relevant to the development of advanced biosensors and other biodevices. Here, an investigation of the covalent immobilisation of a model protein (albumin) onto porous silicon (pSi) films was conducted using a new alkene linker, the synthesis of which was developed. This alkene linker contained both hydrophobic and hydrophilic (oligoethylene glycol) sections and terminated in a protected thiol. The alkene was attached to freshly etched porous silicon via thermal hydrosilylation, where further surface reactions resulted in the attachment of a maleimido N-hydroxysuccinimidyl (NHS) heterobifunctional crosslinker. Albumin was then covalently immobilised on the porous silicon layer through reaction of the protein's amine groups and the NHS functional group of the crosslinker. Surface modification reactions were monitored by infrared spectroscopy and interferometric reflectance spectroscopy. Protein binding was monitored by infrared spectroscopy, fluorescence imaging and atomic force microscopy.

  12. Surface rippling by oblique ion incidence during plasma etching of silicon: Experimental demonstration using sheath control plates

    NASA Astrophysics Data System (ADS)

    Nakazaki, Nobuya; Matsumoto, Haruka; Eriguchi, Koji; Ono, Kouichi

    2015-09-01

    In the microfabrication of 3D transistors (e.g. Fin-FET), the sidewall roughness, such as LER and LWR caused by off-normal or oblique ion incidence during plasma etching, is a critical issue to be resolved, which in turn requires a better understanding of the effects of ion incidence angle θi on surface roughening. This paper presents surface roughening and rippling by oblique ion incidence during inductively coupled plasma etching of Si in Cl2, using the experimental setup as in our previous study. The oblique ion incidence was achieved by sheath control plates, which were placed on and electrically connected to the wafer stage. The plates had slits to vary the sheath structure thereon and to extract ions from plasma to samples on the bottom and/or side of the slits. The results indicated that at θi ~ 40° or oblique incidence; ripple structures were formed on surfaces perpendicularly to the direction of ion incidence, on the other hand, at θi ~ 80° or grazing incidence, small ripples or slit like grooves were formed on surfaces parallel to the direction of ion incidence, as predicted in our previous numerical investigations.

  13. Tracing mechanisms controlling the release of dissolved silicon in forest soil solutions using Si isotopes and Ge/Si ratios

    NASA Astrophysics Data System (ADS)

    Cornelis, J.-T.; Delvaux, B.; Cardinal, D.; André, L.; Ranger, J.; Opfergelt, S.

    2010-07-01

    The terrestrial biogenic Si (BSi) pool in the soil-plant system is ubiquitous and substantial, likely impacting the land-ocean transfer of dissolved Si (DSi). Here, we consider the mechanisms controlling DSi in forest soil in a temperate granitic ecosystem that would differ from previous works mostly focused on tropical environments. This study aims at tracing the source of DSi in forest floor leachates and in soil solutions under various tree species at homogeneous soil and climate conditions, using stable Si isotopes and Ge/Si ratios. Relative to granitic bedrock, clays minerals were enriched in 28Si and had high Ge/Si ratios, while BSi from phytoliths was also enriched in 28Si, but had a low Ge/Si ratio. Such a contrast is useful to infer the relative contribution of silicate weathering and BSi dissolution in the shallow soil on the release of DSi in forest floor leachate solutions. The δ 30Si values in forest floor leachates (-1.38‰ to -2.05‰) are the lightest ever found in natural waters, and Ge/Si ratios are higher in forest floor leachates relative to soil solution. These results suggest dissolution of 28Si and Ge-enriched secondary clay minerals incorporated by bioturbation in organic-rich horizons in combination with an isotopic fractionation releasing preferentially light Si isotopes during this dissolution process. Ge/Si ratios in soil solutions are governed by incongruent weathering of primary minerals and neoformation of secondary clays minerals. Tree species influence Si-isotopic compositions and Ge/Si ratios in forest floor leachates through differing incorporation of minerals in organic horizons by bioturbation and, to a lesser extent, through differing Si recycling.

  14. Expression of delayed rectifier potassium channels and their possible roles in proliferation of human gastric cancer cells.

    PubMed

    Lan, Mei; Shi, Yongquan; Han, Zheyi; Hao, Zhiming; Pan, Yanglin; Liu, Na; Guo, Changcun; Hong, Liu; Wang, Jun; Qiao, Taidong; Fan, Daiming

    2005-12-01

    Voltage-gated potassium (Kv) channels have been reported to be involved in the proliferation of many types of cells, including tumor cells. The overexpression of the Kv channels and related channel activity are involved in the neoplastic process. Our previous study has shown the existence of delayed rectifier potassium (I(K)) current in gastric cancer cells SGC7901. However, the expression and function of most delayed rectifier potassium (K(D)) channel subunits in gastric cancer cells are not completely resolved. Here we examine expression of K(D) channel subunits in Kv1-Kv3 families in immortalized gastric epithelial cells GES and various gastric cancer cells (including AGS, KATOIII, MKN28, MKN45, MGC803, SGC7901, SGC7901/ADR and SGC7901/VCR), and their roles in cell proliferation. RT-PCR analysis reveals that all cell lines examined express Kv1.3, Kv1.5, Kv1.6, Kv2.1 and Kv2.2. However, Kv1.2 and Kv3.2 genes are barely detectable in any given cancer cell lines. Kv1.5 protein, high mRNA levels in all cell lines examined, is also expressed in some cancer cells lines and more frequently detected in gastric cancer tissues. Downregulation of the expression of Kv1.5 in SGC7901 with RNA interference significantly inhibited the proliferation and tumorigenicity of SGC7901 cells. Moreover, in Ca(2+)-containing rather than Ca(2+)-free medium, KCl (50mM) stimulated a rapid increase in the concentration of cytosolic calcium in empty vector transfected cells that was blocked by verapamil. Likewise, decrease the expression of Kv1.5 with short interfering RNA also blocked the depolarization-induced influx of Ca(2+). This finding suggests that more than one kind of K(D) channel subunits are expressed in various gastric cancer cell lines. Kv1.5 may be involved in tumor cells proliferation by controlling Ca(2+) entry, and the interference of K(D) channels expression and/or activity could provide a novel strategy to reverse the malignant phenotype of gastric cancer cells. PMID

  15. Silicon quantum dots for biological applications.

    PubMed

    Chinnathambi, Shanmugavel; Chen, Song; Ganesan, Singaravelu; Hanagata, Nobutaka

    2014-01-01

    Semiconductor nanoparticles (or quantum dots, QDs) exhibit unique optical and electronic properties such as size-controlled fluorescence, high quantum yields, and stability against photobleaching. These properties allow QDs to be used as optical labels for multiplexed imaging and in drug delivery detection systems. Luminescent silicon QDs and surface-modified silicon QDs have also been developed as potential minimally toxic fluorescent probes for bioapplications. Silicon, a well-known power electronic semiconductor material, is considered an extremely biocompatible material, in particular with respect to blood. This review article summarizes existing knowledge related to and recent research progress made in the methods for synthesizing silicon QDs, as well as their optical properties and surface-modification processes. In addition, drug delivery systems and in vitro and in vivo imaging applications that use silicon QDs are also discussed.

  16. A Voltage Controlled Oscillator for a Phase-Locked Loop Frequency Synthesizer in a Silicon-on-Sapphire Process

    SciTech Connect

    Garrison, Sean

    2009-05-21

    Engineers from a government-owned engineering and manufacturing facility were contracted by government-owned research laboratory to design and build an S-band telemetry transmitter using Radio Frequency Integrated Circuit (RFIC) technology packaged in a Low-Temperature Co-fired Ceramic (LTCC) Multi-Chip Module. The integrated circuit technology chosen for the Phase-Locked Loop Frequency Synthesizer portion of the telemetry transmitter was a 0.25 um CMOS process that utilizes a sapphire substrate and is fabricated by Peregrine Semiconductor corporation. This thesis work details the design of the Voltage Controlled Oscillator (VCO) portion of the PLL frequency synthesizer and constitutes an fully integrated VCO core circuit and a high-isolation buffer amplifier. The high-isolation buffer amplifier was designed to provide 16 dB of gain for 2200-3495 MHz as well as 60 dB of isolation for the oscillator core to provide immunity to frequency pulling due to RF load mismatch. Actual measurements of the amplifier gain and isolation showed the gain was approximately 5 dB lower than the simulated gain when all bond-wire and test substrate parasitics were taken into account. The isolation measurements were shown to be 28 dB at the high end of the frequency band but the measurement was more than likely compromised due to the aforementioned bond-wire and test substrate parasitics. The S-band oscillator discussed in this work was designed to operate over a frequency range of 2200 to 2300 MHz with a minimum output power of 0 dBm with a phase-noise of -92 dBc/Hz at a 100 kHz offset from the carrier. The tuning range was measured to be from 2215 MHz to 2330 MHz with a minimum output power of -7 dBm over the measured frequency range. A phase-noise of -90 dBc was measured at a 100 kHz offset from the carrier.

  17. Sorting nexin 27 regulation of G protein-gated inwardly rectifying K⁺ channels attenuates in vivo cocaine response.

    PubMed

    Munoz, Michaelanne B; Slesinger, Paul A

    2014-05-01

    The subcellular pathways that regulate G protein-gated inwardly rectifying potassium (GIRK or Kir3) channels are important for controlling the excitability of neurons. Sorting nexin 27 (SNX27) is a PDZ-containing protein known to bind GIRK2c/GIRK3 channels, but its function in vivo is poorly understood. Here, we investigated the role of SNX27 in regulating GIRK currents in dopamine (DA) neurons of the ventral tegmental area (VTA). Mice lacking SNX27 in DA neurons exhibited reduced GABABR-activated GIRK currents but had normal Ih currents and DA D2R-activated GIRK currents. Expression of GIRK2a, an SNX27-insensitive splice variant, restored GABABR-activated GIRK currents in SNX27-deficient DA neurons. Remarkably, mice with significantly reduced GABABR-activated GIRK currents in only DA neurons were hypersensitive to cocaine and could be restored to a normal locomotor response with GIRK2a expression. These results identify a pathway for regulating excitability of VTA DA neurons, highlighting SNX27 as a promising target for treating addiction. PMID:24811384

  18. Molecular and functional characterization of Anopheles gambiae inward rectifier potassium (Kir1) channels: A novel role in egg production

    PubMed Central

    Raphemot, Rene; Estévez-Lao, Tania Y.; Rouhier, Matthew F.; Piermarini, Peter M.; Denton, Jerod S.; Hillyer, Julián F.

    2014-01-01

    Inward rectifier potassium (Kir) channels play essential roles in regulating diverse physiological processes. Although Kir channels are encoded in mosquito genomes, their functions remain largely unknown. In this study, we identified the members of the Anopheles gambiae Kir gene family and began to investigate their function. Notably, we sequenced the A. gambiae Kir1 (AgKir1) gene and showed that it encodes all the canonical RIP features of a Kir channel: an ion pore that is composed of a pore helix and a selectivity filter, two transmembrane domains that flank the ion pore, and the so-called G-loop. Heterologous expression of AgKir1 in Xenopus oocytes revealed that this gene encodes a functional, barium-sensitive Kir channel. Quantitative RT-PCR experiments then showed that relative AgKir1 mRNA levels are highest in the pupal stage, and that AgKir1 mRNA is enriched in the adult ovaries. Gene silencing of AgKir1 by RNA interference did not affect the survival of female mosquitoes following a blood in mosquito fecundity, and further validates them as promising molecular targets for the meal, but decreased their egg output. These data provide evidence for a new role of Kir channels development of a new class of mosquitocides to be used in vector control. PMID:24855023

  19. Evaluation of acceleration and deceleration cardiac processes using phase-rectified signal averaging in healthy and idiopathic dilated cardiomyopathy subjects.

    PubMed

    Bas, Rosana; Vallverdú, Montserrat; Valencia, Jose F; Voss, Andreas; de Luna, Antonio Bayés; Caminal, Pere

    2015-02-01

    The aim of the present study was to investigate the suitability of the Phase-Rectified Signal Averaging (PRSA) method for improved risk prediction in cardiac patients. Moreover, this technique, which separately evaluates acceleration and deceleration processes of cardiac rhythm, allows the effect of sympathetic and vagal modulations of beat-to-beat intervals to be characterized. Holter recordings of idiopathic dilated cardiomyopathy (IDC) patients were analyzed: high-risk (HR), who suffered sudden cardiac death (SCD) during the follow-up; and low-risk (LR), without any kind of cardiac-related death. Moreover, a control group of healthy subjects was analyzed. PRSA indexes were analyzed, for different time scales T and wavelet scales s, from RR series of 24 h-ECG recordings, awake periods and sleep periods. Also, the behavior of these indexes from simulated data was analyzed and compared with real data results. Outcomes demonstrated the PRSA capacity to significantly discriminate healthy subjects from IDC patients and HR from LR patients on a higher level than traditional temporal and spectral measures. The behavior of PRSA indexes agrees with experimental evidences related to cardiac autonomic modulations. Also, these parameters reflect more regularity of the autonomic nervous system (ANS) in HR patients. PMID:25585858

  20. High-fat diet-dependent modulation of the delayed rectifier K(+) current in adult guinea pig atrial myocytes.

    PubMed

    Aromolaran, Ademuyiwa S; Colecraft, Henry M; Boutjdir, Mohamed

    2016-06-01

    Obesity is associated with hyperlipidemia, electrical remodeling of the heart, and increased risk of supraventricular arrhythmias in both male and female patients. The delayed rectifier K(+) current (IK), is an important regulator of atrial repolarization. There is a paucity of studies on the functional role of IK in response to obesity. Here, we assessed the obesity-mediated functional modulation of IK in low-fat diet (LFD), and high-fat diet (HFD) fed adult guinea pigs. Guinea pigs were randomly divided into control and obese groups fed, ad libitum, with a LFD (10 kcal% fat) or a HFD (45 kcal% fat) respectively. Action potential duration (APD), and IK were studied in atrial myocytes and IKr and IKs in HEK293 cells using whole-cell patch clamp electrophysiology. HFD guinea pigs displayed a significant increase in body weight, total cholesterol and total triglycerides within 50 days. Atrial APD at 30% (APD30) and 90% (APD90) repolarization were shorter, while atrial IK density was significantly increased in HFD guinea pigs. Exposure to palmitic acid (PA) increased heterologously expressed IKr and IKs densities, while oleic acid (OA), severely reduced IKr and had no effect on IKs. The data are first to show that in obese guinea pigs abbreviated APD is due to increased IK density likely through elevations of PA. Our findings may have crucial implications for targeted treatment options for obesity-related arrhythmias.

  1. Process for producing silicon

    DOEpatents

    Olson, J.M.; Carleton, K.L.

    1982-06-10

    A process of producing silicon includes forming an alloy of copper and silicon and positioning the alloy in a dried, molten salt electrolyte to form a solid anode structure therein. An electrically conductive cathode is placed in the electrolyte for plating silicon thereon. The electrolyte is then purified to remove dissolved oxides. Finally, an electrical potential is applied between the anode and cathode in an amount sufficient to form substantially pure silicon on the cathode in the form of substantially dense, coherent deposits.

  2. Producing Silicon Carbide/Silicon Nitride Fibers

    NASA Technical Reports Server (NTRS)

    1986-01-01

    Manufacturing process makes CxSiyNz fibers. Precursor fibers spun from extruding machine charged with polycarbosilazane resin. When pyrolyzed, resin converted to cross-linked mixture of silicon carbide and silicon nitride, still in fiber form. CxSiyNz fibers promising substitutes for carbon fibers in high-strength, low-weight composites where high electrical conductivity unwanted.

  3. Electrodeposition of molten silicon

    DOEpatents

    De Mattei, Robert C.; Elwell, Dennis; Feigelson, Robert S.

    1981-01-01

    Silicon dioxide is dissolved in a molten electrolytic bath, preferably comprising barium oxide and barium fluoride. A direct current is passed between an anode and a cathode in the bath to reduce the dissolved silicon dioxide to non-alloyed silicon in molten form, which is removed from the bath.

  4. Efficient Silicon Reactor

    NASA Technical Reports Server (NTRS)

    Bates, H. E.; Hill, D. M.; Jewett, D. N.

    1983-01-01

    High-purity silicon efficiently produced and transferred by continuous two-cycle reactor. New reactor operates in relatively-narrow temperature rate and uses large surfaces area to minimize heat expenditure and processing time in producing silicon by hydrogen reduction of trichlorosilane. Two cycles of reactor consists of silicon production and removal.

  5. Electrodeposition of molten silicon

    SciTech Connect

    De Mattei, R.C.; Elwell, D.; Feigelson, R.S.

    1981-09-29

    Silicon dioxide is dissolved in a molten electrolytic bath, preferably comprising barium oxide and barium fluoride. A direct current is passed between an anode and a cathode in the bath to reduce the dissolved silicon dioxide to non-alloyed silicon in molten form, which is then removed from the bath.

  6. Photoperiod Modulates Fast Delayed Rectifier Potassium Currents in the Mammalian Circadian Clock

    PubMed Central

    Meijer, Johanna H.; Michel, Stephan

    2016-01-01

    One feature of the mammalian circadian clock, situated in the suprachiasmatic nucleus (SCN), is its ability to measure day length and thereby contribute to the seasonal adaptation of physiology and behavior. The timing signal from the SCN, namely the 24 hr pattern of electrical activity, is adjusted according to the photoperiod being broader in long days and narrower in short days. Vasoactive intestinal peptide and gamma-aminobutyric acid play a crucial role in intercellular communication within the SCN and contribute to the seasonal changes in phase distribution. However, little is known about the underlying ionic mechanisms of synchronization. The present study was aimed to identify cellular mechanisms involved in seasonal encoding by the SCN. Mice were adapted to long-day (light–dark 16:8) and short-day (light–dark 8:16) photoperiods and membrane properties as well as K+ currents activity of SCN neurons were measured using patch-clamp recordings in acute slices. Remarkably, we found evidence for a photoperiodic effect on the fast delayed rectifier K+ current, that is, the circadian modulation of this ion channel’s activation reversed in long days resulting in 50% higher peak values during the night compared with the unaltered day values. Consistent with fast delayed rectifier enhancement, duration of action potentials during the night was shortened and afterhyperpolarization potentials increased in amplitude and duration. The slow delayed rectifier, transient K+ currents, and membrane excitability were not affected by photoperiod. We conclude that photoperiod can change intrinsic ion channel properties of the SCN neurons, which may influence cellular communication and contribute to photoperiodic phase adjustment. PMID:27697884

  7. Semiconductor systems utilizing materials that form rectifying junctions in both N and P-type doping regions, whether metallurgically or field induced, and methods of use

    DOEpatents

    Welch, James D.

    2000-01-01

    Disclosed are semiconductor systems, such as integrated circuits utilizing Schotky barrier and/or diffused junction technology, which semiconductor systems incorporate material(s) that form rectifying junctions in both metallurgically and/or field induced N and P-type doping regions, and methods of their use. Disclosed are Schottky barrier based inverting and non-inverting gate voltage channel induced semiconductor single devices with operating characteristics similar to multiple device CMOS systems and which can be operated as modulators, N and P-channel MOSFETS and CMOS formed therefrom, and (MOS) gate voltage controlled rectification direction and gate voltage controlled switching devices, and use of such material(s) to block parasitic current flow pathways. Simple demonstrative five mask fabrication procedures for inverting and non-inverting gate voltage channel induced semiconductor single devices with operating characteristics similar to multiple device CMOS systems are also presented.

  8. In situ ZnO nanowire growth to promote the PVDF piezo phase and the ZnO-PVDF hybrid self-rectified nanogenerator as a touch sensor.

    PubMed

    Li, Zetang; Zhang, Xu; Li, Guanghe

    2014-03-28

    A PVDF-ZnO nanowires (NWs) hybrid generator (PZHG) was designed. A simple, cost effective method to produce the PVDF β phase by nano force is introduced. With the ZnO NWs growing, the in situ nano extension force promotes the phase change. A theoretical analysis of the ZnO NWs acting as a self-rectifier of the nano generator is established. The ZnO NWs acted as a self-adjustment diode to control the current output of the PZHG by piezo-electric and semi-conductive effects. Based on the self-controllability of the piezoelectric output, three kinds of finger touching are distinguished by the output performances of the PZHG, which is applicable to an LCD touch pad. PMID:24515250

  9. In situ ZnO nanowire growth to promote the PVDF piezo phase and the ZnO-PVDF hybrid self-rectified nanogenerator as a touch sensor.

    PubMed

    Li, Zetang; Zhang, Xu; Li, Guanghe

    2014-03-28

    A PVDF-ZnO nanowires (NWs) hybrid generator (PZHG) was designed. A simple, cost effective method to produce the PVDF β phase by nano force is introduced. With the ZnO NWs growing, the in situ nano extension force promotes the phase change. A theoretical analysis of the ZnO NWs acting as a self-rectifier of the nano generator is established. The ZnO NWs acted as a self-adjustment diode to control the current output of the PZHG by piezo-electric and semi-conductive effects. Based on the self-controllability of the piezoelectric output, three kinds of finger touching are distinguished by the output performances of the PZHG, which is applicable to an LCD touch pad.

  10. Rectifying performance and negative differential behavior in graphite—chain—carbon nanotube junctions

    SciTech Connect

    Qiu, Ming; Li, Jiangfan; Liew, K. M.; Yuan, Chris

    2014-01-13

    In this paper, the (5, 5) capped carbon nanotubes (CNTs) in contact with different lengths of sp monoatomic chains grown on the surface of graphite substrate are fabricated and its electronic transport properties sandwiched between CNT and graphite electrodes are investigated. The first-principles calculations based on nonequilibrium Green's function in combination with density-functional theory show that their rectifying performance and negative differential resistance behavior are observed under very low biases and obviously are enhanced when the length increases. From our analysis, the charge transfer, transmission spectra, projected density of states and evolutions of molecular orbitals are responsible for these phenomena.

  11. Enhancing the photoelectric effect with a potential-programmed molecular rectifier.

    PubMed

    Imaoka, Takane; Ueda, Hiroaki; Yamamoto, Kimihisa

    2012-05-23

    Dendrimer-based electron rectifiers were applied to photoconducting devices. A remarkable enhancement of the photocurrent response was observed when a zinc porphyrin as the photosensitizer was embedded in the dendritic phenylazomethine (DPA) architecture. The dendrimer-based sensitizer exhibited a 20-fold higher current response than the non-dendritic zinc porphyrin. In sharp contrast, a similar application of the dendrimer with poly(vinylcarbazole) as the electron donor resulted in a decreased response. This is consistent with the idea that the DPA facilitates electron transfer from the core to its periphery along a potential gradient, as predicted by density functional theory calculations.

  12. Molecular motors that digest their track to rectify Brownian motion: processive movement of exonuclease enzymes.

    PubMed

    Xie, Ping

    2009-09-16

    A general model is presented for the processive movement of molecular motors such as λ-exonuclease, RecJ and exonuclease I that use digestion of a DNA track to rectify Brownian motion along this track. Using this model, the translocation dynamics of these molecular motors is studied. The sequence-dependent pausing of λ-exonuclease, which results from a site-specific high affinity DNA interaction, is also studied. The theoretical results are consistent with available experimental data. Moreover, the model is used to predict the lifetime distribution and force dependence of these paused states.

  13. Development of thermal rectifier using unusual electron thermal conductivity of icosahedral quasicrystals

    NASA Astrophysics Data System (ADS)

    Takeuchi, Tsunehiro

    2015-03-01

    The bulk thermal rectifiers usable at high temperature were developed using the unusual increase of electron thermal conductivity of icosahedral quasicrystals (ICQ's) at high temperature. Our previously performed analyses in terms of linear response theory suggested that the unusual increase of electron thermal conductivity of ICQ was brought about by the synergy effect of quasiperiodicity and narrow pseudogap at the Fermi level. Since the linear response theory suggests that the unusual increase of electron thermal conductivity is coupled with the small magnitude of Seebeck coefficient, the composition of Al-Cu-Fe ICQ, where the thermal conductivity shows the most significant increase with increasing temperature, was determined with a great help of Seebeck coefficient measurements. Consequently obtained Al61.5Cu26.5Fe12.0 ICQ, which was characterized by the small magnitude of Seebeck coefficient, possessed 9 times larger value of thermal conductivity at 1000 K than that observed at 300 K. The increasing tendency of electron thermal conductivity with increasing temperature was further enhanced by means of small amount of Re substitution for Fe. This substitution definitely reduced the lattice thermal conductivity while the electron thermal conductivity was kept unchanged. The lattice thermal conductivity was reduced by 35 % under the presence of 0.5 at.% Re, and the thermal conductivity at 1000 K consequently became about 11 times larger than that at 300 K. The thermal rectifiers were constructed using our newly developed ICQ (Al61.5Cu26.5Fe12.0 or Al61.0Si0.5Cu26.5Fe11.5Re0.5) together with one of the selected materials (Si, Al2O3, CuGeTe2 or Ag2Te) that possess thermal conductivity decreasing with increasing temperature. The heat current flowing in the rectifiers was confirmed to show significant direction dependence. The consequently obtained TRR =|Jlarge|/ |Jsmall | for the composite consisting of

  14. Ripple due to asymmetry in symmetrical Cockcroft-Walton cascade rectifier circuit

    NASA Astrophysics Data System (ADS)

    Zhang, Haibo; Takaoka, Akio

    1994-12-01

    We experimentally examine the ripple and its spectra in the dc output of a symmetrical Cockcroft-Walton (CW) cascade rectifier circuit. Results show that the ripple due to the load consists of even harmonics and the ripple due to the circuit asymmetry consists of odd harmonics. In the latter, the ripple caused by the asymmetry of circuit elements cannot be compensated for completely through the asymmetry of the input voltage because of nonlinearity of a CW circuit. Approximately, the residual ripple is inversely proportional to the load resistance.

  15. Rectifying the Optical-Field-Induced Current in Dielectrics: Petahertz Diode

    NASA Astrophysics Data System (ADS)

    Lee, J. D.; Yun, Won Seok; Park, Noejung

    2016-02-01

    Investigating a theoretical model of the optical-field-induced current in dielectrics driven by strong few-cycle laser pulses, we propose an asymmetric conducting of the current by forming a heterojunction made of two distinct dielectrics with a low hole mass (mh*≪me*) and low electron mass (me*≪mh* ), respectively. This proposition introduces the novel concept of a petahertz (1015 Hz ) diode to rectify the current in the petahertz domain, which should be a key ingredient for the electric signal manipulation of future light-wave electronics. Further, we suggest the candidate dielectrics for the heterojunction.

  16. Assignment of the human hippocampal inward rectifier potassium channel (HIR) gene to 22q13.1

    SciTech Connect

    Budarf, M.L.; Barnoski, B.L.; Bell, C.J.

    1995-04-10

    The HIR gene encodes a small-conductance inward rectifier potassium channel (HIR or K{sub IR}2.3) that is found in heart and brain. Inward rectifiers are a specialized class of potassium channels that produce large inward currents at potentials negative to the potassium equilibrium potential and only small outward currents at more positive potentials. This asymmetry in K{sup +} conductance plays a key role in the excitability of muscle cells and neurons. Inward rectifier potassium channels are the major contributors to the basal potassium conductance in cardiac muscle, where their role is to modulate cell excitability and heart beat frequency, maintain the resting potential, and terminate the long-duration cardiac action potentials. In the central nervous system, inward rectifiers are involved in similar aspects of the modulation of cell excitability. The central role of inward rectifiers in cardiac and neuronal function suggest that they might be involved in the etiology of human cardiovascular and neurological diseases. 11 refs., 2 figs.

  17. Comparison between Phase-Shift Full-Bridge Converters with Noncoupled and Coupled Current-Doubler Rectifier

    PubMed Central

    Tsai, Cheng-Tao; Tseng, Sheng-Yu

    2013-01-01

    This paper presents comparison between phase-shift full-bridge converters with noncoupled and coupled current-doubler rectifier. In high current capability and high step-down voltage conversion, a phase-shift full-bridge converter with a conventional current-doubler rectifier has the common limitations of extremely low duty ratio and high component stresses. To overcome these limitations, a phase-shift full-bridge converter with a noncoupled current-doubler rectifier (NCDR) or a coupled current-doubler rectifier (CCDR) is, respectively, proposed and implemented. In this study, performance analysis and efficiency obtained from a 500 W phase-shift full-bridge converter with two improved current-doubler rectifiers are presented and compared. From their prototypes, experimental results have verified that the phase-shift full-bridge converter with NCDR has optimal duty ratio, lower component stresses, and output current ripple. In component count and efficiency comparison, CCDR has fewer components and higher efficiency at full load condition. For small size and high efficiency requirements, CCDR is relatively suitable for high step-down voltage and high efficiency applications. PMID:24381521

  18. Black Silicon Enhanced Thin Film Silicon Photovoltaic Devices

    SciTech Connect

    Martin U. Pralle; James E. Carey

    2010-07-31

    SiOnyx has developed an enhanced thin film silicon photovoltaic device with improved efficiency. Thin film silicon solar cells suffer from low material absorption characteristics resulting in poor cell efficiencies. SiOnyx’s approach leverages Black Silicon, an advanced material fabricated using ultrafast lasers. The laser treated films show dramatic enhancement in optical absorption with measured values in excess of 90% in the visible spectrum and well over 50% in the near infrared spectrum. Thin film Black Silicon solar cells demonstrate 25% higher current generation with almost no impact on open circuit voltage as compared with representative control samples. The initial prototypes demonstrated an improvement of nearly 2 percentage points in the suns Voc efficiency measurement. In addition we validated the capability to scale this processing technology to the throughputs (< 5 min/m2) required for volume production using state of the art commercially available high power industrial lasers. With these results we clearly demonstrate feasibility for the enhancement of thin film solar cells with this laser processing technique.

  19. Glass-silicon column

    DOEpatents

    Yu, Conrad M.

    2003-12-30

    A glass-silicon column that can operate in temperature variations between room temperature and about 450.degree. C. The glass-silicon column includes large area glass, such as a thin Corning 7740 boron-silicate glass bonded to a silicon wafer, with an electrode embedded in or mounted on glass of the column, and with a self alignment silicon post/glass hole structure. The glass/silicon components are bonded, for example be anodic bonding. In one embodiment, the column includes two outer layers of silicon each bonded to an inner layer of glass, with an electrode imbedded between the layers of glass, and with at least one self alignment hole and post arrangement. The electrode functions as a column heater, and one glass/silicon component is provided with a number of flow channels adjacent the bonded surfaces.

  20. Porous silicon gettering

    SciTech Connect

    Tsuo, Y.S.; Menna, P.; Al-Jassim, M.

    1995-08-01

    We have studied a novel extrinsic gettering method that utilizes the very large surface areas, produced by porous silicon etch on both front and back surfaces of the silicon wafer, as gettering sites. In this method, a simple and low-cost chemical etching is used to generate the porous silicon layers. Then, a high-flux solar furnace (HFSF) is used to provide high-temperature annealing and the required injection of silicon interstitials. The gettering sites, along with the gettered impurities, can be easily removed at the end the process. The porous silicon removal process consists of oxidizing the porous silicon near the end the gettering process followed by sample immersion in HF acid. Each porous silicon gettering process removes up to about 10 {mu}m of wafer thickness. This gettering process can be repeated so that the desired purity level is obtained.

  1. The SNAP trial: a double blind multi-center randomized controlled trial of a silicon nitride versus a PEEK cage in transforaminal lumbar interbody fusion in patients with symptomatic degenerative lumbar disc disorders: study protocol

    PubMed Central

    2014-01-01

    Background Polyetheretherketone (PEEK) cages have been widely used in the treatment of lumbar degenerative disc disorders, and show good clinical results. Still, complications such as subsidence and migration of the cage are frequently seen. A lack of osteointegration and fibrous tissues surrounding PEEK cages are held responsible. Ceramic implants made of silicon nitride show better biocompatible and osteoconductive qualities, and therefore are expected to lower complication rates and allow for better fusion. Purpose of this study is to show that fusion with the silicon nitride cage produces non-inferior results in outcome of the Roland Morris Disability Questionnaire at all follow-up time points as compared to the same procedure with PEEK cages. Methods/Design This study is designed as a double blind multi-center randomized controlled trial with repeated measures analysis. 100 patients (18–75 years) presenting with symptomatic lumbar degenerative disorders unresponsive to at least 6 months of conservative treatment are included. Patients will be randomly assigned to a PEEK cage or a silicon nitride cage, and will undergo a transforaminal lumbar interbody fusion with pedicle screw fixation. Primary outcome measure is the functional improvement measured by the Roland Morris Disability Questionnaire. Secondary outcome parameters are the VAS leg, VAS back, SF-36, Likert scale, neurological outcome and radiographic assessment of fusion. After 1 year the fusion rate will be measured by radiograms and CT. Follow-up will be continued for 2 years. Patients and clinical observers who will perform the follow-up visits will be blinded for type of cage used during follow-up. Analyses of radiograms and CT will be performed independently by two experienced radiologists. Discussion In this study a PEEK cage will be compared with a silicon nitride cage in the treatment of symptomatic degenerative lumbar disc disorders. To our knowledge, this is the first randomized controlled

  2. Simulation and Analysis of Three-Phase Rectifiers for Aerospace Power Applications

    NASA Technical Reports Server (NTRS)

    Truong, Long V.; Birchenough, Arthur G.

    2004-01-01

    Due to the nature of planned planetary missions, fairly large advanced power systems are required for the spacecraft. These future high power spacecrafts are expected to use dynamic power conversion systems incorporating high speed alternators as three-phase AC electrical power source. One of the early design considerations in such systems is the type of rectification to be used with the AC source for DC user loads. This paper address the issues involved with two different rectification methods, namely the conventional six and twelve pulses. Two circuit configurations which involved parallel combinations of the six and twelve-pulse rectifiers were selected for the simulation. The rectifier s input and output power waveforms will be thoroughly examined through simulations. The effects of the parasitic load for power balancing and filter components for reducing the ripple voltage at the DC loads are also included in the analysis. Details of the simulation circuits, simulation results, and design examples for reducing risk from damaging of spacecraft engines will be presented and discussed.

  3. Exploring the roles of standard rectifying circuits on the performance of a nonlinear piezoelectric energy harvester

    NASA Astrophysics Data System (ADS)

    Tang, Lihua; Han, Yue; Hand, James; Harne, Ryan L.

    2016-04-01

    To enhance the energy conversion performance of piezoelectric vibration energy harvesters, such structures have been recently designed to leverage bandwidth-enhancing nonlinear dynamics. While key findings have been made, the majority of researchers have evaluated the opportunities when the harvesters are connected to pure resistive loads (AC interface). The alternating voltage generated by such energy harvesting systems cannot be directly utilized to power conventional electronics. Rectifying circuits are required to interface the device and electronic load but few efforts have considered how a standard rectifying DC interface circuit (DC interface) connected to a nonlinear piezoelectric energy harvester influences the system performance. The aim of this research is to begin exploring this critical feature of the nonlinear energy harvesting system. A nonlinear, monostable piezoelectric energy harvester (MPEH) is fabricated and evaluated to determine the generated power and useful operating bandwidth when connected to a DC interface. The nonlinearity is introduced into the harvester design by tuneable magnetic force. An equivalent circuit model of the MPEH is implemented with a user-defined nonlinear behavioral voltage source representative of the magnetic interaction. The model is validated comparing the open circuit voltage from circuit simulation and experiment. The practical energy harvesting capability of the MPEH connected to the AC and DC interface circuits are then investigated and compared, focusing on the influence of the varying load on the nonlinear dynamics and subsequent bandwidth and harvested power.

  4. Fluorescence measurements reveal stoichiometry of K+ channels formed by modulatory and delayed rectifier alpha-subunits.

    PubMed

    Kerschensteiner, Daniel; Soto, Florentina; Stocker, Martin

    2005-04-26

    Modulatory alpha-subunits, which comprise one-fourth of all voltagegated K(+) channel (Kv) alpha-subunits, do not assemble into homomeric channels, but selectively associate with delayed rectifier Kv2 subunits to form heteromeric channels of unknown stoichiometry. Their distinct expression patterns and unique functional properties have made these channels candidate molecular correlates for a broad set of native K(+) currents. Here, we combine FRET and electrophysiological measurements to determine the stoichiometry and geometry of heteromeric channels composed of the delayed rectifier Kv2.1 subunit and the modulatory Kv9.3 alpha-subunit. Kv channel alpha-subunits were fused with GFP variants, and heteromerization of different combinations of tagged and untagged alpha-subunits was studied. FRET, evaluated by acceptor photobleaching, was only observed upon formation of functional channels. Our results, obtained from two independent experimental paradigms, suggest the formation of heteromeric Kv2.1/Kv9.3 channels of fixed stoichiometry consisting of three Kv2.1 subunits and one Kv9.3 subunit. Strikingly, despite this uneven stoichiometry, we find that heteromeric Kv2.1/Kv9.3 channels maintain a pseudosymmetric arrangement of subunits around the central pore. PMID:15827117

  5. Fluorescence measurements reveal stoichiometry of K+ channels formed by modulatory and delayed rectifier α-subunits

    PubMed Central

    Kerschensteiner, Daniel; Soto, Florentina; Stocker, Martin

    2005-01-01

    Modulatory α-subunits, which comprise one-fourth of all voltagegated K+ channel (Kv) α-subunits, do not assemble into homomeric channels, but selectively associate with delayed rectifier Kv2 subunits to form heteromeric channels of unknown stoichiometry. Their distinct expression patterns and unique functional properties have made these channels candidate molecular correlates for a broad set of native K+ currents. Here, we combine FRET and electrophysiological measurements to determine the stoichiometry and geometry of heteromeric channels composed of the delayed rectifier Kv2.1 subunit and the modulatory Kv9.3 α-subunit. Kv channel α-subunits were fused with GFP variants, and heteromerization of different combinations of tagged and untagged α-subunits was studied. FRET, evaluated by acceptor photobleaching, was only observed upon formation of functional channels. Our results, obtained from two independent experimental paradigms, suggest the formation of heteromeric Kv2.1/Kv9.3 channels of fixed stoichiometry consisting of three Kv2.1 subunits and one Kv9.3 subunit. Strikingly, despite this uneven stoichiometry, we find that heteromeric Kv2.1/Kv9.3 channels maintain a pseudosymmetric arrangement of subunits around the central pore. PMID:15827117

  6. A paradox concerning ion permeation of the delayed rectifier potassium ion channel in squid giant axons.

    PubMed Central

    Clay, J R

    1991-01-01

    1. The fully activated current-voltage relation (I-V) of the delayed rectifier potassium ion channel in squid giant axons has a non-linear dependence upon the driving force, V-EK, as I have previously demonstrated, where V is membrane potential and EK is the equilibrium potential for potassium ions. 2. The non-linearity of the I-V relation and its dependence upon external potassium ion concentration are both well described, phenomenologically, by the Goldman-Hodgkin-Katz (GHK) flux equation, as I have also previously demonstrated. As illustrated below, this result can be modelled using the Eyring rate theory of single-file diffusion of ions through a channel in the low-occupancy limit of the theory. 3. The GHK equation analysis and the low-occupancy limit of the Eyring rate theory are both consistent with the independence principle for movement of ions through the channel, which is at odds with tracer flux ratio results from the delayed rectifier, published elsewhere. Those results suggest that the channel is multiply occupied by two, or perhaps three, ions. 4. The resolution of this paradox is provided by a triple-binding site, multiple-occupancy model in which only one vacancy, at most, is allowed in the channel. This model predicts current-voltage relations which are consistent with the data (and with the phenomenological prediction of the GHK flux equation). The model is also consistent, approximately, with the tracer flux ratio results. PMID:1822560

  7. Self-contained sub-millimeter wave rectifying antenna integrated circuit

    NASA Technical Reports Server (NTRS)

    Siegel, Peter H. (Inventor)

    2004-01-01

    The invention is embodied in a monolithic semiconductor integrated circuit in which is formed an antenna, such as a slot dipole antenna, connected across a rectifying diode. In the preferred embodiment, the antenna is tuned to received an electromagnetic wave of about 2500 GHz so that the device is on the order of a wavelength in size, or about 200 microns across and 30 microns thick. This size is ideal for mounting on a microdevice such as a microrobot for example. The antenna is endowed with high gain in the direction of the incident radiation by providing a quarter-wavelength (30 microns) thick resonant cavity below the antenna, the cavity being formed as part of the monolithic integrated circuit. Preferably, the integrated circuit consists of a thin gallium arsenide membrane overlying the resonant cavity and supporting an epitaxial Gallium Arsenide semiconductor layer. The rectifying diode is a Schottky diode formed in the GaAs semiconductor layer and having an area that is a very small fraction of the wavelength of the 2500 GHz incident radiation. The cavity provides high forward gain in the antenna and isolation from surrounding structure.

  8. G-protein-coupled inward rectifier potassium channels involved in corticostriatal presynaptic modulation.

    PubMed

    Meneses, David; Mateos, Verónica; Islas, Gustavo; Barral, Jaime

    2015-09-01

    Presynaptic modulation has been associated mainly with calcium channels but recent data suggests that inward rectifier potassium channels (K(IR)) also play a role. In this work we set to characterize the role of presynaptic K(IR) channels in corticostriatal synaptic transmission. We elicited synaptic potentials in striatum by stimulating cortical areas and then determined the synaptic responses of corticostriatal synapsis by using paired pulse ratio (PPR) in the presence and absence of several potassium channel blockers. Unspecific potassium channels blockers Ba(2+) and Cs(+) reduced the PPR, suggesting that these channels are presynaptically located. Further pharmacological characterization showed that application of tertiapin-Q, a specific K(IR)3 channel family blocker, also induced a reduction of PPR, suggesting that K(IR)3 channels are present at corticostriatal terminals. In contrast, exposure to Lq2, a specific K(IR)1.1 inward rectifier potassium channel, did not induce any change in PPR suggesting the absence of these channels in the presynaptic corticostriatal terminals. Our results indicate that K(IR)3 channels are functionally expressed at the corticostriatal synapses, since blockage of these channels result in PPR decrease. Our results also help to explain how synaptic activity may become sensitive to extracellular signals mediated by G-protein coupled receptors. A vast repertoire of receptors may influence neurotransmitter release in an indirect manner through regulation of K(IR)3 channels.

  9. Effect of sodium ferulate on delayed rectifier K+ currents in PC12 cells

    PubMed Central

    WANG, WEI; WANG, YUYUN; ZHANG, CHUNLEI; SUN, MENGMENG; ZHU, XIAOYIN

    2014-01-01

    In order to investigate the effect of sodium ferulate (SF) on voltage-activated K+ channels, the delayed rectifier K+ current (Ik) in PC12 rat pheochromocytoma cells was recorded using the automated patch-clamp method. The results indicated that following the application of SF, the Ik in PC12 cells was significantly decreased in a concentration-dependent manner. The analysis of activation kinetic curves and inactivation kinetic curves of Ik showed that SF had an effect on the activation and inactivation kinetics. Following the application of 15.3 μM SF, the activation curve of the Ik of PC12 cells was shifted to positive potentials and the inactivation curve of the Ik of PC12 cells was shifted to negative potentials. This study revealed that the delayed rectifier K+ currents of PC12 cells were inhibited following SF treatment in a concentration-dependent manner. The mechanism may be associated with the delayed activation and enhanced inactivation of Ik-associated channels. PMID:25120634

  10. High-performance microfluidic rectifier based on sudden expansion channel with embedded block structure.

    PubMed

    Tsai, Chien-Hsiung; Lin, Che-Hsin; Fu, Lung-Ming; Chen, Hui-Chun

    2012-06-01

    A high-performance microfluidic rectifier incorporating a microchannel and a sudden expansion channel is proposed. In the proposed device, a block structure embedded within the expansion channel is used to induce two vortex structures at the end of the microchannel under reverse flow conditions. The vortices reduce the hydraulic diameter of the microchannel and, therefore, increase the flow resistance. The rectification performance of the proposed device is evaluated by both experimentally and numerically. The experimental and numerical values of the rectification performance index (i.e., the diodicity, Di) are found to be 1.54 and 1.76, respectively. Significantly, flow rectification is achieved without the need for moving parts. Thus, the proposed device is ideally suited to the high pressure environment characteristic of most micro-electro-mechanical-systems (MEMS)-based devices. Moreover, the rectification performance of the proposed device is superior to that of existing valveless rectifiers based on Tesla valves, simple nozzle/diffuser structures, or cascaded nozzle/diffuser structures.

  11. High-performance microfluidic rectifier based on sudden expansion channel with embedded block structure

    PubMed Central

    Tsai, Chien-Hsiung; Lin, Che-Hsin; Fu, Lung-Ming; Chen, Hui-Chun

    2012-01-01

    A high-performance microfluidic rectifier incorporating a microchannel and a sudden expansion channel is proposed. In the proposed device, a block structure embedded within the expansion channel is used to induce two vortex structures at the end of the microchannel under reverse flow conditions. The vortices reduce the hydraulic diameter of the microchannel and, therefore, increase the flow resistance. The rectification performance of the proposed device is evaluated by both experimentally and numerically. The experimental and numerical values of the rectification performance index (i.e., the diodicity, Di) are found to be 1.54 and 1.76, respectively. Significantly, flow rectification is achieved without the need for moving parts. Thus, the proposed device is ideally suited to the high pressure environment characteristic of most micro-electro-mechanical-systems (MEMS)-based devices. Moreover, the rectification performance of the proposed device is superior to that of existing valveless rectifiers based on Tesla valves, simple nozzle/diffuser structures, or cascaded nozzle/diffuser structures. PMID:22655019

  12. Transverse superresolution technique involving rectified Laguerre-Gaussian LG(p)⁰ beams.

    PubMed

    Cagniot, Emmanuel; Fromager, Michael; Godin, Thomas; Passilly, Nicolas; Aït-Ameur, Kamel

    2011-08-01

    A promising technique has been proposed recently [Opt. Commun. 284, 1331 (2011), Opt. Commun. 284, 4107 (2011)] for breaking the diffraction limit of light. This technique consists of transforming a symmetrical Laguerre-Gaussian LG(p)⁰ beam into a near-Gaussian beam at the focal plane of a thin converging lens thanks to a binary diffractive optical element (DOE) having a transmittance alternatively equal to -1 or +1, transversely. The effect of the DOE is to convert the alternately out-of-phase rings of the LG(p)⁰ beam into a unified phase front. The benefits of the rectified beam at the lens focal plane are a short Rayleigh range, which is very useful for many laser applications, and a focal volume much smaller than that obtained with a Gaussian beam. In this paper, we demonstrate numerically that the central lobe's radius of the rectified beam at the lens focal plane depends exclusively on the dimensionless radial intensity vanishing factor of the incident beam. Consequently, this value can be easily predicted.

  13. A new pH-sensitive rectifying potassium channel in mitochondria from the embryonic rat hippocampus.

    PubMed

    Kajma, Anna; Szewczyk, Adam

    2012-10-01

    Patch-clamp single-channel studies on mitochondria isolated from embryonic rat hippocampus revealed the presence of two different potassium ion channels: a large-conductance (288±4pS) calcium-activated potassium channel and second potassium channel with outwardly rectifying activity under symmetric conditions (150/150mM KCl). At positive voltages, this channel displayed a conductance of 67.84pS and a strong voltage dependence at holding potentials from -80mV to +80mV. The open probability was higher at positive than at negative voltages. Patch-clamp studies at the mitoplast-attached mode showed that the channel was not sensitive to activators and inhibitors of mitochondrial potassium channels but was regulated by pH. Moreover, we demonstrated that the channel activity was not affected by the application of lidocaine, an inhibitor of two-pore domain potassium channels, or by tertiapin, an inhibitor of inwardly rectifying potassium channels. In summary, based on the single-channel recordings, we characterised for the first time mitochondrial pH-sensitive ion channel that is selective for cations, permeable to potassium ions, displays voltage sensitivity and does not correspond to any previously described potassium ion channels in the inner mitochondrial membrane. This article is part of a Special Issue entitled: 17th European Bioenergetics Conference (EBEC 2012).

  14. Two-Temperature-Zone Silicon Reactor

    NASA Technical Reports Server (NTRS)

    Sanjurjo, A.; Nanis, L.; Kapur, V. K.; Weaver, R. D.

    1983-01-01

    When high purity silicon is synthesized by reduction of silicon tetrafluoride by sodium, very-fast highly exothermic reaction takes place. Controlled reaction is proposed in which SiF4-pressurized vertical reactor operates with two temperature zones. Liquid sodium feeds from nozzle at top of rector without reacting with SiF4. When sodium reaches higher temperature region at bottom, reaction takes place immediately.

  15. Graphene as transparent and current spreading electrode in silicon solar cell

    SciTech Connect

    Behura, Sanjay K. Nayak, Sasmita; Jani, Omkar; Mahala, Pramila

    2014-11-15

    Fabricated bi-layer graphene (BLG) has been studied as transparent and current spreading electrode (TCSE) for silicon solar cell, using TCAD-Silvaco 2D simulation. We have carried out comparative study using both Ag grids and BLG as current spreading electrode (CSE) and TCSE, respectively. Our study reveals that BLG based solar cell shows better efficiency of 24.85% than Ag-based cell (21.44%), in all of the critical aspects, including generation rate, recombination rate, electric field, potential and quantum efficiency. Further BLG based cell exhibits pronounce rectifying behavior, low saturation current, and good turn-on voltage while studying in dark.

  16. Vacuum Refining of Molten Silicon

    NASA Astrophysics Data System (ADS)

    Safarian, Jafar; Tangstad, Merete

    2012-12-01

    Metallurgical fundamentals for vacuum refining of molten silicon and the behavior of different impurities in this process are studied. A novel mass transfer model for the removal of volatile impurities from silicon in vacuum induction refining is developed. The boundary conditions for vacuum refining system—the equilibrium partial pressures of the dissolved elements and their actual partial pressures under vacuum—are determined through thermodynamic and kinetic approaches. It is indicated that the vacuum removal kinetics of the impurities is different, and it is controlled by one, two, or all the three subsequent reaction mechanisms—mass transfer in a melt boundary layer, chemical evaporation on the melt surface, and mass transfer in the gas phase. Vacuum refining experimental results of this study and literature data are used to study the model validation. The model provides reliable results and shows correlation with the experimental data for many volatile elements. Kinetics of phosphorus removal, which is an important impurity in the production of solar grade silicon, is properly predicted by the model, and it is observed that phosphorus elimination from silicon is significantly increased with increasing process temperature.

  17. Self-rectifying resistive-switching characteristics with ultralow operating currents in SiOxNy/AlN bilayer devices

    NASA Astrophysics Data System (ADS)

    Kwon, Jeong Yong; Park, Ju Hyun; Kim, Tae Geun

    2015-06-01

    We propose a SiOxNy/AlN bilayer resistive switching random access memory scheme to eliminate crosstalk in a crossbar array structure. We demonstrated forming-free self-rectifying behaviors at an ultralow operating current (below 200 nA) by optimizing the current compliance and operating voltage. The set and reset voltages were reduced using a thin AlN layer, and the voltages' on/off ratio and rectifying ratio were as high as 80 and 102, respectively. In addition, the device showed an endurance of 103 dc cycles and a retention time over 105 s.

  18. Suprachiasmatic nucleus function and circadian entrainment are modulated by G protein-coupled inwardly rectifying (GIRK) channels

    PubMed Central

    Hablitz, L M; Molzof, H E; Paul, J R; Johnson, R L; Gamble, K L

    2014-01-01

    Abstract G protein signalling within the central circadian oscillator, the suprachiasmatic nucleus (SCN), is essential for conveying time-of-day information. We sought to determine whether G protein-coupled inwardly rectifying potassium channels (GIRKs) modulate SCN physiology and circadian behaviour. We show that GIRK current and GIRK2 protein expression are greater during the day. Pharmacological inhibition of GIRKs and genetic loss of GIRK2 depolarized the day-time resting membrane potential of SCN neurons compared to controls. Behaviourally, GIRK2 knockout (KO) mice failed to shorten free running period in response to wheel access in constant darkness and entrained more rapidly to a 6 h advance of a 12 h:12 h light–dark (LD) cycle than wild-type (WT) littermate controls. We next examined whether these effects were due to disrupted signalling of neuropeptide Y (NPY), which is known to mediate non-photic phase shifts, attenuate photic phase shifts and activate GIRKs. Indeed, GIRK2 KO SCN slices had significantly fewer silent cells in response to NPY, likely contributing to the absence of NPY-induced phase advances of PER2::LUC rhythms in organotypic SCN cultures from GIRK2 KO mice. Finally, GIRK channel activation is sufficient to cause a non-photic-like phase advance of PER2::LUC rhythms on a Per2Luc+/− background. These results suggest that rhythmic regulation of GIRK2 protein and channel function in the SCN contributes to day-time resting membrane potential, providing a mechanism for the fine tuning responses to non-photic and photic stimuli. Further investigation could provide insight into disorders with circadian disruption comorbidities such as epilepsy and addiction, in which GIRK channels have been implicated. PMID:25217379

  19. Novel silicone materials for LED packaging

    NASA Astrophysics Data System (ADS)

    Norris, Ann W.; Bahadur, Maneesh; Yoshitake, Makoto

    2005-09-01

    Silicone based materials have attracted considerable attention from Light Emitting Diode (LED) manufacturers for use as encapsulants and lenses for many next generation LED device designs. Silicones can function in several roles that include protective lenses, stress relieving encapsulants, mechanical protection and light path materials. The key attributes of silicones that make them attractive materials for high brightness (HB) LEDs include their high transparency in the UV-visible region, controlled refractive index (RI), stable thermo-mechanical properties, and tuneable hardness from soft gels to hard resins. The high current and high operating temperatures of HB-LEDs present a significant materials challenge for traditional organic materials such as epoxies, acrylics and cyclo olefin copolymers (COC) that lack the thermal and molecular stability needed to provide optical clarity and mechanical performance required for next generation devices. In addition, the retention of optical clarity over the lifetime of the device, which involves long term exposure to high flux in the UV-visible wavelength region, is a critical requirement. Silicones have been demonstrated to provide the required stability. This paper will describe recent silicone materials development efforts directed towards providing LED manufacturers with silicone materials solutions for LED device fabrication. Injection molding of novel silicone resin based materials will be discussed as a surmountable challenge for high throughput LED device manufacturing.

  20. Affordable Fabrication and Properties of Silicon Carbide-Based Interpenetrating Phase Composites

    NASA Technical Reports Server (NTRS)

    Singh, Mrityunjay

    1998-01-01

    An affordable processing technique for the fabrication of silicon carbide-based interpenetrating phase composites (IPCs) is presented. This process consists of the production of microporous carbon preforms and subsequent infiltration with liquid silicon or silicon-refractory metal alloys. The microporous preforms are made by the pyrolysis of a polymerized resin mixture for which methods to control pore volume and pore size have been established. The process gives good control of microstructure and morphology of silicon carbide-based composite materials. Room and high temperature mechanical properties (flexural strength, compressive strength, and flexural creep) of low and high silicon-silicon carbide composites will be discussed.

  1. Functional Nanoscale Electronic Devices Assembled Using Silicon Nanowire Building Blocks

    NASA Astrophysics Data System (ADS)

    Cui, Yi; Lieber, Charles M.

    2001-02-01

    Because semiconductor nanowires can transport electrons and holes, they could function as building blocks for nanoscale electronics assembled without the need for complex and costly fabrication facilities. Boron- and phosphorous-doped silicon nanowires were used as building blocks to assemble three types of semiconductor nanodevices. Passive diode structures consisting of crossed p- and n-type nanowires exhibit rectifying transport similar to planar p-n junctions. Active bipolar transistors, consisting of heavily and lightly n-doped nanowires crossing a common p-type wire base, exhibit common base and emitter current gains as large as 0.94 and 16, respectively. In addition, p- and n-type nanowires have been used to assemble complementary inverter-like structures. The facile assembly of key electronic device elements from well-defined nanoscale building blocks may represent a step toward a ``bottom-up'' paradigm for electronics manufacturing.

  2. Functional nanoscale electronic devices assembled using silicon nanowire building blocks.

    PubMed

    Cui, Y; Lieber, C M

    2001-02-01

    Because semiconductor nanowires can transport electrons and holes, they could function as building blocks for nanoscale electronics assembled without the need for complex and costly fabrication facilities. Boron- and phosphorous-doped silicon nanowires were used as building blocks to assemble three types of semiconductor nanodevices. Passive diode structures consisting of crossed p- and n-type nanowires exhibit rectifying transport similar to planar p-n junctions. Active bipolar transistors, consisting of heavily and lightly n-doped nanowires crossing a common p-type wire base, exhibit common base and emitter current gains as large as 0.94 and 16, respectively. In addition, p- and n-type nanowires have been used to assemble complementary inverter-like structures. The facile assembly of key electronic device elements from well-defined nanoscale building blocks may represent a step toward a "bottom-up" paradigm for electronics manufacturing.

  3. Controlled Directional Solidification of Aluminum - 7 wt Percent Silicon Alloys: Comparison Between Samples Processed on Earth and in the Microgravity Environment Aboard the International Space Station

    NASA Technical Reports Server (NTRS)

    Grugel, Richard N.; Tewari, Surendra N.; Erdman, Robert G.; Poirier, David R.

    2012-01-01

    An overview of the international "MIcrostructure Formation in CASTing of Technical Alloys" (MICAST) program is given. Directional solidification processing of metals and alloys is described, and why experiments conducted in the microgravity environment aboard the International Space Station (ISS) are expected to promote our understanding of this commercially relevant practice. Microstructural differences observed when comparing the aluminum - 7 wt% silicon alloys directionally solidified on Earth to those aboard the ISS are presented and discussed.

  4. Dual Mode Inverter Control Test Verification

    SciTech Connect

    Bailey, J.M.

    2001-04-25

    Permanent Magnet Motors with either sinusoidal back emf (permanent magnet synchronous motor [PMSM]) or trapezoidal back emf (brushless dc motor [BDCM]) do not have the ability to alter the air gap flux density (field weakening). Since the back emf increases with speed, the system must be designed to operate with the voltage obtained at its highest speed. Oak Ridge National Laboratory's (ORNL) Power Electronics and Electric Machinery Research Center (PEEMRC) has developed a dual mode inverter controller (DMIC) that overcomes this disadvantage. This report summarizes the results of tests to verify its operation. The standard PEEMRC 75 kW hard-switched inverter was modified to implement the field weakening procedure (silicon controlled rectifier enabled phase advance). A 49.5 hp motor rated at 2800 rpm was derated to a base of 400 rpm and 7.5 hp. The load developed by a Kahn Industries hydraulic dynamometer, was measured with a MCRT9-02TS Himmelstein and Company torque meter. At the base conditions a current of 212 amperes produced the 7.5 hp. Tests were run at 400, 1215, and 2424 rpm. In each run, the current was no greater than 214 amperes. The horsepower obtained in the three runs were 7.5, 9.3, and 8.12. These results verified the basic operation of the DMIC in producing a Constant Power Speed Ratios (CPSR) of six.

  5. Silicone oil and fluorosilicone.

    PubMed

    Yamamoto, S; Takeuchi, S

    2000-03-01

    Silicone oil has been used to fill the vitreous cavity for long-term or permanent internal tamponade in eyes with proliferative vitreoretinopathy or complicated retinal detachment due to ocular trauma, giant retinal tears, proliferative diabetic retinopathy, and cytomegalovirus retinitis. Reports from the Silicone Study confirmed its efficacy in the treatment of proliferative vitreoretinopathy and addressed outcome differences in vitrectomized and nonvitrectomized eyes, combined retinotomy, silicone oil removal, and complications associated with silicone oil tamponade, such as intraocular pressure abnormalities and corneal abnormalities. Because silicone oil is lighter than water and not adequate in supporting the inferior quadrants, several heavier-than-water materials have been introduced for intraocular tamponade. Silicone oil can be a potential vehicle for delivering antiproliferative agents to treat proliferative vitreoretinopathy.

  6. Silicon micro-mold

    DOEpatents

    Morales, Alfredo M.

    2006-10-24

    The present invention describes a method for rapidly fabricating a robust 3-dimensional silicon-mold for use in preparing complex metal micro-components. The process begins by depositing a conductive metal layer onto one surface of a silicon wafer. A thin photoresist and a standard lithographic mask are then used to transfer a trace image pattern onto the opposite surface of the wafer by exposing and developing the resist. The exposed portion of the silicon substrate is anisotropically etched through the wafer thickness down to conductive metal layer to provide an etched pattern consisting of a series of rectilinear channels and recesses in the silicon which serve as the silicon micro-mold. Microcomponents are prepared with this mold by first filling the mold channels and recesses with a metal deposit, typically by electroplating, and then removing the silicon micro-mold by chemical etching.

  7. High Detectivity Graphene-Silicon Heterojunction Photodetector.

    PubMed

    Li, Xinming; Zhu, Miao; Du, Mingde; Lv, Zheng; Zhang, Li; Li, Yuanchang; Yang, Yao; Yang, Tingting; Li, Xiao; Wang, Kunlin; Zhu, Hongwei; Fang, Ying

    2016-02-01

    A graphene/n-type silicon (n-Si) heterojunction has been demonstrated to exhibit strong rectifying behavior and high photoresponsivity, which can be utilized for the development of high-performance photodetectors. However, graphene/n-Si heterojunction photodetectors reported previously suffer from relatively low specific detectivity due to large dark current. Here, by introducing a thin interfacial oxide layer, the dark current of graphene/n-Si heterojunction has been reduced by two orders of magnitude at zero bias. At room temperature, the graphene/n-Si photodetector with interfacial oxide exhibits a specific detectivity up to 5.77 × 10(13) cm Hz(1/2) W(-1) at the peak wavelength of 890 nm in vacuum, which is highest reported detectivity at room temperature for planar graphene/Si heterojunction photodetectors. In addition, the improved graphene/n-Si heterojunction photodetectors possess high responsivity of 0.73 A W(-1) and high photo-to-dark current ratio of ≈10(7) . The current noise spectral density of the graphene/n-Si photodetector has been characterized under ambient and vacuum conditions, which shows that the dark current can be further suppressed in vacuum. These results demonstrate that graphene/Si heterojunction with interfacial oxide is promising for the development of high detectivity photodetectors. PMID:26643577

  8. High Detectivity Graphene-Silicon Heterojunction Photodetector.

    PubMed

    Li, Xinming; Zhu, Miao; Du, Mingde; Lv, Zheng; Zhang, Li; Li, Yuanchang; Yang, Yao; Yang, Tingting; Li, Xiao; Wang, Kunlin; Zhu, Hongwei; Fang, Ying

    2016-02-01

    A graphene/n-type silicon (n-Si) heterojunction has been demonstrated to exhibit strong rectifying behavior and high photoresponsivity, which can be utilized for the development of high-performance photodetectors. However, graphene/n-Si heterojunction photodetectors reported previously suffer from relatively low specific detectivity due to large dark current. Here, by introducing a thin interfacial oxide layer, the dark current of graphene/n-Si heterojunction has been reduced by two orders of magnitude at zero bias. At room temperature, the graphene/n-Si photodetector with interfacial oxide exhibits a specific detectivity up to 5.77 × 10(13) cm Hz(1/2) W(-1) at the peak wavelength of 890 nm in vacuum, which is highest reported detectivity at room temperature for planar graphene/Si heterojunction photodetectors. In addition, the improved graphene/n-Si heterojunction photodetectors possess high responsivity of 0.73 A W(-1) and high photo-to-dark current ratio of ≈10(7) . The current noise spectral density of the graphene/n-Si photodetector has been characterized under ambient and vacuum conditions, which shows that the dark current can be further suppressed in vacuum. These results demonstrate that graphene/Si heterojunction with interfacial oxide is promising for the development of high detectivity photodetectors.

  9. Speed control for synchronous motors

    NASA Technical Reports Server (NTRS)

    Packard, H.; Schott, J.

    1981-01-01

    Feedback circuit controls fluctuations in speed of synchronous ac motor. Voltage proportional to phase angle is developed by phase detector, rectified, amplified, compared to threshold, and reapplied positively or negatively to motor excitation circuit. Speed control reduces wow and flutter of audio turntables and tape recorders, and enhances hunting in gyroscope motors.

  10. Nucleation in small scale multicrystalline silicon ingots

    NASA Astrophysics Data System (ADS)

    Brynjulfsen, I.; Arnberg, L.; Autruffe, A.

    2012-12-01

    Small scale solidification experiments were performed in order to study nucleation mechanisms of solar cell silicon. Ingots were grown in a Bridgman furnace; with a high rate (5 cm/min), inducing dendrite-like grains; and at a slow rate (0.2 mm/min), simulating the common slow crystal growth process. Two types of silicon were used, polysilicon and compensated material. The results showed that for the early stages of silicon solidification, the compensated material behaves similar to the polysilicon. A high undercooling of 11±3 K was obtained for one of the fast cooled experiments. This suggests that Si3N4-coating is not the important factor for nucleation, but Si3N4-precipitates in the melt could contribute as inoculants. Grains with similar orientation were observed for both the solidification rates, which indicates that the most important issue for grain growth selection in PV silicon is control of the vertical growth, rather than nucleation substrates.

  11. Joining of silicon nitrides using oxynitride glasses

    SciTech Connect

    O`Brien, M.H.

    1993-03-01

    This report presents a study on commercial silicon nitrides that were successfully joined using oxynitride glasses. Sintered silicon nitride was joined by either closed or glass-filled joints. Glass-filled joints were successfully used on hot-pressed silicon nitrides and were comparable in fast fracture strength to unjoined silicon nitrides up to approximately 1000C. Above that temperature, strengths decreased rapidly and glass flow failure began. The study observed that time-dependent failure currently limits the service temperatures of glass-filled joints. Creep failure occurred in excess of 1000C. Between 900 and 1000C, slow crack growth failure was observed. Cavitation (or viscous deformation) was the rate-controlling mechanism of slow crack growth.

  12. Novel duplex vapor-electrochemical method for silicon solar cells

    NASA Technical Reports Server (NTRS)

    Kapur, V. K.; Nanis, L.; Sanjurjo, A.

    1977-01-01

    Silicon was produced by alternate pulse feeding of the reactants SiF4 gas and liquid sodium. The average temperature in the reactor could be controlled, by regulating the amount of reactant in each pulse. Silicon tetrafluoride gas was analyzed by mass spectrometry to determine the nature and amount of contained volatile impurities which included silicon oxyfluorides, sulfur oxyfluorides, and sulfur dioxide. Sodium metal was analyzed by emission spectrography, and it was found to contain only calcium and copper as impurities.

  13. Micromachined silicon electrostatic chuck

    DOEpatents

    Anderson, R.A.; Seager, C.H.

    1996-12-10

    An electrostatic chuck is faced with a patterned silicon plate, created by micromachining a silicon wafer, which is attached to a metallic base plate. Direct electrical contact between the chuck face (patterned silicon plate`s surface) and the silicon wafer it is intended to hold is prevented by a pattern of flat-topped silicon dioxide islands that protrude less than 5 micrometers from the otherwise flat surface of the chuck face. The islands may be formed in any shape. Islands may be about 10 micrometers in diameter or width and spaced about 100 micrometers apart. One or more concentric rings formed around the periphery of the area between the chuck face and wafer contain a low-pressure helium thermal-contact gas used to assist heat removal during plasma etching of a silicon wafer held by the chuck. The islands are tall enough and close enough together to prevent silicon-to-silicon electrical contact in the space between the islands, and the islands occupy only a small fraction of the total area of the chuck face, typically 0.5 to 5 percent. The pattern of the islands, together with at least one hole bored through the silicon veneer into the base plate, will provide sufficient gas-flow space to allow the distribution of the helium thermal-contact gas. 6 figs.

  14. Micromachined silicon electrostatic chuck

    DOEpatents

    Anderson, Robert A.; Seager, Carleton H.

    1996-01-01

    An electrostatic chuck is faced with a patterned silicon plate 11, created y micromachining a silicon wafer, which is attached to a metallic base plate 13. Direct electrical contact between the chuck face 15 (patterned silicon plate's surface) and the silicon wafer 17 it is intended to hold is prevented by a pattern of flat-topped silicon dioxide islands 19 that protrude less than 5 micrometers from the otherwise flat surface of the chuck face 15. The islands 19 may be formed in any shape. Islands may be about 10 micrometers in diameter or width and spaced about 100 micrometers apart. One or more concentric rings formed around the periphery of the area between the chuck face 15 and wafer 17 contain a low-pressure helium thermal-contact gas used to assist heat removal during plasma etching of a silicon wafer held by the chuck. The islands 19 are tall enough and close enough together to prevent silicon-to-silicon electrical contact in the space between the islands, and the islands occupy only a small fraction of the total area of the chuck face 15, typically 0.5 to 5 percent. The pattern of the islands 19, together with at least one hole 12 bored through the silicon veneer into the base plate, will provide sufficient gas-flow space to allow the distribution of the helium thermal-contact gas.

  15. Periodically poled silicon

    NASA Astrophysics Data System (ADS)

    Hon, Nick K.; Tsia, Kevin K.; Solli, Daniel R.; Jalali, Bahram

    2009-03-01

    We propose a new class of photonic devices based on periodic stress fields in silicon that enable second-order nonlinearity as well as quasi-phase matching. Periodically poled silicon (PePSi) adds the periodic poling capability to silicon photonics and allows the excellent crystal quality and advanced manufacturing capabilities of silicon to be harnessed for devices based on second-order nonlinear effects. As an example of the utility of the PePSi technology, we present simulations showing that midwave infrared radiation can be efficiently generated through difference frequency generation from near-infrared with a conversion efficiency of 50%.

  16. Silicon web process development

    NASA Technical Reports Server (NTRS)

    Duncan, C. S.; Seidensticker, R. G.; Mchugh, J. P.; Skutch, M. E.; Driggers, J. M.; Hopkins, R. H.

    1981-01-01

    The silicon web process takes advantage of natural crystallographic stabilizing forces to grow long, thin single crystal ribbons directly from liquid silicon. The ribbon, or web, is formed by the solidification of a liquid film supported by surface tension between two silicon filaments, called dendrites, which border the edges of the growing strip. The ribbon can be propagated indefinitely by replenishing the liquid silicon as it is transformed to crystal. The dendritic web process has several advantages for achieving low cost, high efficiency solar cells. These advantages are discussed.

  17. The CDFII Silicon Detector

    SciTech Connect

    Julia Thom

    2004-07-23

    The CDFII silicon detector consists of 8 layers of double-sided silicon micro-strip sensors totaling 722,432 readout channels, making it one of the largest silicon detectors in present use by an HEP experiment. After two years of data taking, we report on our experience operating the complex device. The performance of the CDFII silicon detector is presented and its impact on physics analyses is discussed. We have already observed measurable effects from radiation damage. These results and their impact on the expected lifetime of the detector are briefly reviewed.

  18. Simultaneous high crystallinity and sub-bandgap optical absorptance in hyperdoped black silicon using nanosecond laser annealing

    SciTech Connect

    Franta, Benjamin Pastor, David; Gandhi, Hemi H.; Aziz, Michael J.; Mazur, Eric; Rekemeyer, Paul H.; Gradečak, Silvija

    2015-12-14

    Hyperdoped black silicon fabricated with femtosecond laser irradiation has attracted interest for applications in infrared photodetectors and intermediate band photovoltaics due to its sub-bandgap optical absorptance and light-trapping surface. However, hyperdoped black silicon typically has an amorphous and polyphasic polycrystalline surface that can interfere with carrier transport, electrical rectification, and intermediate band formation. Past studies have used thermal annealing to obtain high crystallinity in hyperdoped black silicon, but thermal annealing causes a deactivation of the sub-bandgap optical absorptance. In this study, nanosecond laser annealing is used to obtain high crystallinity and remove pressure-induced phases in hyperdoped black silicon while maintaining high sub-bandgap optical absorptance and a light-trapping surface morphology. Furthermore, it is shown that nanosecond laser annealing reactivates the sub-bandgap optical absorptance of hyperdoped black silicon after deactivation by thermal annealing. Thermal annealing and nanosecond laser annealing can be combined in sequence to fabricate hyperdoped black silicon that simultaneously shows high crystallinity, high above-bandgap and sub-bandgap absorptance, and a rectifying electrical homojunction. Such nanosecond laser annealing could potentially be applied to non-equilibrium material systems beyond hyperdoped black silicon.

  19. Docetaxel modulates the delayed rectifier potassium current (IK) and ATP-sensitive potassium current (IKATP) in human breast cancer cells.

    PubMed

    Sun, Tao; Song, Zhi-Guo; Jiang, Da-Qing; Nie, Hong-Guang; Han, Dong-Yun

    2015-04-01

    Ion channel expression and activity may be affected during tumor development and cancer growth. Activation of potassium (K(+)) channels in human breast cancer cells is reported to be involved in cell cycle progression. In this study, we investigated the effects of docetaxel on the delayed rectifier potassium current (I K) and the ATP-sensitive potassium current (I KATP) in two human breast cancer cell lines, MCF-7 and MDA-MB-435S, using the whole-cell patch-clamp technique. Our results show that docetaxel inhibited the I K and I KATP in both cell lines in a dose-dependent manner. Compared with the control at a potential of +60 mV, treatment with docetaxel at doses of 0.1, 1, 5, and 10 µM significantly decreased the I K in MCF-7 cells by 16.1 ± 3.5, 30.2 ± 5.2, 42.5 ± 4.3, and 46.4 ± 9% (n = 5, P < 0.05), respectively and also decreased the I KATP at +50 mV. Similar results were observed in MDA-MB-435S cells. The G-V curves showed no significant changes after treatment of either MCF-7 or MDA-MB-435S cells with 10 μM docetaxel. The datas indicate that the possible mechanisms of I K and I KATP inhibition by docetaxel may be responsible for its effect on the proliferation of human breast cancer cells.

  20. Rectifying properties of ZnO thin films deposited on FTO by electrodeposition technique

    NASA Astrophysics Data System (ADS)

    Lv, Jianguo; Sun, Yue; Zhao, Min; Cao, Li; Xu, Jiayuan; He, Gang; Zhang, Miao; Sun, Zhaoqi

    2016-03-01

    ZnO thin films were successfully grown on fluorine-doped tin oxide glass by electrodeposition technique. The crystal structure, surface morphology and optical properties of the thin films were investigated. The average crystallite size and intensity of A1(LO) mode increase with improving the absolute value of deposition potential. The best preferential orientation along c-axis and the richest oxygen interstitial defects have been observed in the sample deposited at -0.8 V. A heterojunction device consisting of ZnO thin film and n-type fluorine-doped tin oxide was fabricated. The current-voltage (I-V) characteristic of the p-n heterojunction device deposited at -0.8 V shows the best rectifying diode behavior. The p-type conductivity of the ZnO thin film could be attributed to complex defect of unintentional impurity and interstitial oxygen.