A review of the developments of radioxenon detectors for nuclear explosion monitoring

DOE Office of Scientific and Technical Information (OSTI.GOV)

Sivels, Ciara B.; McIntyre, Justin I.; Bowyer, Theodore W.

Developments in radioxenon monitoring since the implementation of the International Monitoring System are reviewed with emphasis on the most current technologies to improve detector sensitivity and resolution. The nuclear detectors reviewed include combinations of plastic and NaI(Tl) detectors, high purity germanium detectors, silicon detectors, and phoswich detectors. The minimum detectable activity and calibration methods for the various detectors are also discussed.

A Radiation Dosimeter Concept for the Lunar Surface Environment

NASA Technical Reports Server (NTRS)

Adams, James H.; Christl, Mark J.; Watts, John; Kuznetsov, Eugeny N.; Parnell, Thomas A.; Pendleton, Geoff N.

2007-01-01

A novel silicon detector configuration for radiation dose measurements in an environment where solar energetic particles are of most concern is described. The dosimeter would also measure the dose from galactic cosmic rays. In the lunar environment a large range in particle flux and ionization density must be measured and converted to dose equivalent. This could be accomplished with a thick (e.g. 2mm) silicon detector segmented into cubic volume elements "voxels" followed by a second, thin monolithic silicon detector. The electronics needed to implement this detector concept include analog signal processors (ASIC) and a field programmable gate array (FPGA) for data accumulation and conversion to linear energy transfer (LET) spectra and to dose-equivalent (Sievert). Currently available commercial ASIC's and FPGA's are suitable for implementing the analog and digital systems.

SiC As An Energetic Particle Detector

NASA Technical Reports Server (NTRS)

Yan, F.; Hicks, J.; Shappirio, Mark D.; Brown, S.; Smith, C.; Xin, X.; Zhao, J. H.

2005-01-01

Several new technologies have been introduced recently in the region of semiconductor material for solid state detectors (SSD). Of particular interest is silicon carbide (SIC) since its band gap is larger than that of pure silicon, reducing its dark current and making SIC capable of operating at high temperatures and more tolerant of radiation damage. But the trade off is that a higher band gap also means fewer electron hole pairs generated, and thus a smaller signal, for detecting incident radiation. To determine what the lower limit of SiC detectors to energetic particles is, we irradiated a SiC diode with particles ranging in energy from 50 keV to 1.6 MeV and masses from 1 to 16 amu. We found that the SiC detectors sensitivity was comparable to that of pure silicon, with the SiC detector being able to measure particles down to 50 keV/amu and possibly lower.

The fabrication of nitrogen detector porous silicon nanostructures

NASA Astrophysics Data System (ADS)

Husairi, F. S.; Othman, N.; Eswar, K. A.; Guliling, Muliyadi; Khusaimi, Z.; Rusop, M.; Abdullah, S.

2018-05-01

In this study the porous silicon nanostructure used as a the nitrogen detector was fabricated by using anodization method because of simple and easy to handle. This method using 20 mA/ cm2 of current density and the etching time is from 10 - 40 minutes. The properties of the porous silicon nanostructure analyzed using I-V testing (electrical properties) and photoluminescence spectroscopy. From the I-V testing, sample PsiE40 where the sensitivity is 25.4% is a sensitivity of PSiE40 at 10 seconds exposure time.

Measuring Charge Collection Efficiency in Diamond Vertex Detectors

NASA Astrophysics Data System (ADS)

Josey, Brian; Seidel, Sally; Hoeferkamp, Martin

2011-10-01

As currently used at the Large Hadron Collider, vertex detectors are composed primarily of silicon sensors that image particle tracks by detecting the creation of electron-hole pairs caused by the excitation of the silicon atoms. We are investigating replacing these silicon detectors with detectors made out of diamond. Diamond is advantageous due to its radiation hardness. We are measuring the charge collection efficiency of diamond as a function of fluence. We are building a characterization station. Diamond samples will be placed into the characterization station and exposed to a strontium-90 beta source, before and after I irradiate them with 800 MeV protons at LANL. The radiation from the Sr-90 source will create electron-hole pairs. These will be read out by applying an electric field across the sample. The system is triggered by a scintillator-photomultiplier tube assembly. The goal of this measurement is to record collected charge as a function of bias voltage. The diamond charge collection data will be compared to silicon and predictions about detector operation at the LHC will be made.

A new timing detector for the CT-PPS project

NASA Astrophysics Data System (ADS)

Arcidiacono, R.; Cms; TOTEM Collaborations

2017-02-01

The CT-PPS detector will be installed close to the beam line on both sides of CMS, 200 m downstream the interaction point. This detector will measure forward scattered protons, allowing detailed studies of diffractive hadron physics and Central Exclusive Production. The main components of the CT-PPS detector are a silicon tracking system and a timing system. In this contribution we present the proposal of an innovative solution for the timing system, based on Ultra-Fast Silicon Detectors (UFSD). UFSD are a novel concept of silicon detectors potentially able to obtain the necessary time resolution (∼20 ps on the proton arrival time). The use of UFSD has also other attractive features as its material budget is small and the pixel geometries can be tailored to the precise physics distribution of protons. UFSD prototypes for CT-PPS have been designed by CNM (Barcelona) and FBK (Trento): we will present the status of the sensor productions and of the low-noise front-end electronics currently under development and test.

Study of the effects of neutron irradiation on silicon strip detectors

NASA Astrophysics Data System (ADS)

Guibellino, P.; Panizza, G.; Hall, G.; Sotthibandhu, S.; Ziock, H. J.; Ferguson, P.; Sommer, W. F.; Edwards, M.; Cartiglia, N.; Hubbard, B.; Lesloe, J.; Pitzl, D.; O'Shaughnessy, K.; Rowe, W.; Sadoziski, H. F.-W.; Seiden, A.; Spencer, E.

1992-05-01

Silicon strip detectors and test structures were exposed to neutron fluences up to Φ = 6.1 × 10 14 n/cm 2, using the ISIS neutron source at the Rutherford Appleton Laboratory (UK). In this paper we report some of our results concerning the effects of displacement damage, with a comparison of devices made of silicon of different resistivity. The various samples exposed showed a very similar dependence of the leakage current on the fluence received. We studied the change of effective doping concentration, and observed a behaviour suggesting the onset of type inversion at a fluence of ˜ 2.0 × 10 13 n/cm 2, a value which depends on the initial doping concentration. The linear increase of the depletion voltage for fluences higher than the inversion point could eventually determine the maximum fluence tolerable by silicon detectors.

Thermal management and mechanical structures for silicon detector systems

NASA Astrophysics Data System (ADS)

Viehhauser, G.

2015-09-01

Due to the size of current silicon tracking systems system aspects have become a major design driver. This article discusses requirements for the engineering of the mechanical structures and thermal management of such systems and reviews solutions developed to satisfy them. Modern materials and fabrication techniques have been instrumental in constructing these devices and will be discussed here. Finally, this paper will describe current and potential future developments in the engineering of silicon tracking systems which will shape the silicon tracking systems of the future.

Performance studies of X3 silicon detectors for the future ELISSA array at ELI-NP

NASA Astrophysics Data System (ADS)

Chesnevskaya, S.; Balabanski, D. L.; Choudhury, D.; Constantin, P.; Filipescu, D. M.; Ghita, D. G.; Guardo, G. L.; Lattuada, D.; Matei, C.; Rotaru, A.; State, A.

2018-05-01

ELISSA is an array of silicon strip detectors under construction at the ELI-NP facility for measurements of photodissociation reactions using high-brilliance, quasi monoenergetic gamma beams. The detection system consists of 35 single-sided position-sensitive X3 detectors arranged in a cylindrical configuration and eight QQQ3 detectors as end-caps. A batch of forty X3 detectors have been tested at ELI-NP. The energy and position resolution, ballistic deficit, leakage currents, and depletion voltage were measured and analyzed. Measurements of the energy resolution were carried out using two read-out electronic chains, one based on multichannel preamplifiers and another based on multiplexers.

Quantum interference in heterogeneous superconducting-photonic circuits on a silicon chip

PubMed Central

Schuck, C.; Guo, X.; Fan, L.; Ma, X.; Poot, M.; Tang, H. X.

2016-01-01

Quantum information processing holds great promise for communicating and computing data efficiently. However, scaling current photonic implementation approaches to larger system size remains an outstanding challenge for realizing disruptive quantum technology. Two main ingredients of quantum information processors are quantum interference and single-photon detectors. Here we develop a hybrid superconducting-photonic circuit system to show how these elements can be combined in a scalable fashion on a silicon chip. We demonstrate the suitability of this approach for integrated quantum optics by interfering and detecting photon pairs directly on the chip with waveguide-coupled single-photon detectors. Using a directional coupler implemented with silicon nitride nanophotonic waveguides, we observe 97% interference visibility when measuring photon statistics with two monolithically integrated superconducting single-photon detectors. The photonic circuit and detector fabrication processes are compatible with standard semiconductor thin-film technology, making it possible to implement more complex and larger scale quantum photonic circuits on silicon chips. PMID:26792424

Low-background detector arrays for infrared astronomy

NASA Technical Reports Server (NTRS)

Mccreight, C. R.; Estrada, J. A.; Goebel, J. H.; Mckelvey, M. E.; Mckibbin, D. D.; Mcmurray, R. E., Jr.; Weber, T. T.

1989-01-01

The status of a program which develops and characterizes integrated infrared (IR) detector array technology for space astronomical applications is described. The devices under development include intrinsic, extrinsic silicon, and extrinsic germanium detectors, coupled to silicon readout electronics. Low-background laboratory test results include measurements of responsivity, noise, dark current, temporal response, and the effects of gamma-radiation. In addition, successful astronomical imagery has been obtained on some arrays from this program. These two aspects of the development combine to demonstrate the strong potential for integrated array technology for IR space astronomy.

Evaluating the Performance of a Commercial Silicon Drift Detector for X-ray Microanalysis

DOE Office of Scientific and Technical Information (OSTI.GOV)

Kenik, Edward A

2011-01-01

Silicon drift detectors (SDDs) are rapidly becoming the energy dispersive spectrometer (EDS) of choice, especially for scanning electron microscopy x-ray microanalysis. The complementary features of large active areas (i.e., high collection angle) and high count rate capability of these detector contribute to their popularity, as well as the absence of liquid nitrogen cooling and good energy resolution of these detectors. The performance of an EDAX Apollo 40 SDD on a JEOL 6500F SEM is discussed. The larger detector resulted in an significant increase (~3.5x) in geometric collection efficiency compared to the original 10mm2 Si(Li) detector that it replaced. The SEMmore » can provide high beam currents (up to 200nA in some conditions) at small probe diameters. The high count rate capability of the SDD and the high current capability of the SEM compliment each other and provide excellent EDS analytical capabilities for both single point and spectrum imaging applications.« less

Indium-bump-free antimonide superlattice membrane detectors on silicon substrates

DOE Office of Scientific and Technical Information (OSTI.GOV)

Zamiri, M., E-mail: mzamiri@chtm.unm.edu, E-mail: skrishna@chtm.unm.edu; Klein, B.; Schuler-Sandy, T.

2016-02-29

We present an approach to realize antimonide superlattices on silicon substrates without using conventional Indium-bump hybridization. In this approach, PIN superlattices are grown on top of a 60 nm Al{sub 0.6}Ga{sub 0.4}Sb sacrificial layer on a GaSb host substrate. Following the growth, the individual pixels are transferred using our epitaxial-lift off technique, which consists of a wet-etch to undercut the pixels followed by a dry-stamp process to transfer the pixels to a silicon substrate prepared with a gold layer. Structural and optical characterization of the transferred pixels was done using an optical microscope, scanning electron microscopy, and photoluminescence. The interface betweenmore » the transferred pixels and the new substrate was abrupt, and no significant degradation in the optical quality was observed. An Indium-bump-free membrane detector was then fabricated using this approach. Spectral response measurements provided a 100% cut-off wavelength of 4.3 μm at 77 K. The performance of the membrane detector was compared to a control detector on the as-grown substrate. The membrane detector was limited by surface leakage current. The proposed approach could pave the way for wafer-level integration of photonic detectors on silicon substrates, which could dramatically reduce the cost of these detectors.« less

Setup for irradiation and characterization of materials and Si particle detectors at cryogenic temperatures

NASA Astrophysics Data System (ADS)

Väyrynen, S.; Pusa, P.; Sane, P.; Tikkanen, P.; Räisänen, J.; Kuitunen, K.; Tuomisto, F.; Härkönen, J.; Kassamakov, I.; Tuominen, E.; Tuovinen, E.

2007-03-01

A novel facility for proton irradiation with sample cryocooling has been developed at the Accelerator Laboratory of Helsinki University (equipped with a 5 MV tandem accelerator). The setup enables unique experiments to be carried out within the temperature range of 10-300 K. The setup has been constructed for "on-line" studies of vacancies with positron annihilation spectroscopy (PAS) including the option for optical ionization of the vacancies, and for current-voltage ( IV) measurements of irradiated silicon particle detectors. The setup is described in detail and typical performance characteristics are provided. The facility functionality was tested by performing PAS experiments with high-resistivity silicon and by IV measurements for two types of irradiated silicon particle detectors.

Visible-blind ultraviolet photodetectors on porous silicon carbide substrates

DOE Office of Scientific and Technical Information (OSTI.GOV)

Naderi, N.; Hashim, M.R., E-mail: roslan@usm.my

2013-06-01

Highlights: • Highly reliable UV detectors are fabricated on porous silicon carbide substrates. • The optical properties of samples are enhanced by increasing the current density. • The optimized sample exhibits enhanced sensitivity to the incident UV radiation. - Abstract: Highly reliable visible-blind ultraviolet (UV) photodetectors were successfully fabricated on porous silicon carbide (PSC) substrates. High responsivity and high photoconductive gain were observed in a metal–semiconductor–metal ultraviolet photodetector that was fabricated on an optimized PSC substrate. The PSC samples were prepared via the UV-assisted photo-electrochemical etching of an n-type hexagonal silicon carbide (6H-SiC) substrate using different etching current densities. Themore » optical results showed that the current density is an outstanding etching parameter that controls the porosity and uniformity of PSC substrates. A highly porous substrate was synthesized using a suitable etching current density to enhance its light absorption, thereby improving the sensitivity of UV detector with this substrate. The electrical characteristics of fabricated devices on optimized PSC substrates exhibited enhanced sensitivity and responsivity to the incident radiation.« less

Processing of n+/p-/p+ strip detectors with atomic layer deposition (ALD) grown Al2O3 field insulator on magnetic Czochralski silicon (MCz-si) substrates

NASA Astrophysics Data System (ADS)

Härkönen, J.; Tuovinen, E.; Luukka, P.; Gädda, A.; Mäenpää, T.; Tuominen, E.; Arsenovich, T.; Junkes, A.; Wu, X.; Li, Z.

2016-08-01

Detectors manufactured on p-type silicon material are known to have significant advantages in very harsh radiation environment over n-type detectors, traditionally used in High Energy Physics experiments for particle tracking. In p-type (n+ segmentation on p substrate) position-sensitive strip detectors, however, the fixed oxide charge in the silicon dioxide is positive and, thus, causes electron accumulation at the Si/SiO2 interface. As a result, unless appropriate interstrip isolation is applied, the n-type strips are short-circuited. Widely adopted methods to terminate surface electron accumulation are segmented p-stop or p-spray field implantations. A different approach to overcome the near-surface electron accumulation at the interface of silicon dioxide and p-type silicon is to deposit a thin film field insulator with negative oxide charge. We have processed silicon strip detectors on p-type Magnetic Czochralski silicon (MCz-Si) substrates with aluminum oxide (Al2O3) thin film insulator, grown with Atomic Layer Deposition (ALD) method. The electrical characterization by current-voltage and capacitance-voltage measurement shows reliable performance of the aluminum oxide. The final proof of concept was obtained at the test beam with 200 GeV/c muons. For the non-irradiated detector the charge collection efficiency (CCE) was nearly 100% with a signal-to-noise ratio (S/N) of about 40, whereas for the 2×1015 neq/cm2 proton irradiated detector the CCE was 35%, when the sensor was biased at 500 V. These results are comparable with the results from p-type detectors with the p-spray and p-stop interstrip isolation techniques. In addition, interestingly, when the aluminum oxide was irradiated with Co-60 gamma-rays, an accumulation of negative fixed oxide charge in the oxide was observed.

Measurements of the reverse current of highly irradiated silicon sensors to determine the effective energy and current related damage rate

NASA Astrophysics Data System (ADS)

Wiehe, Moritz; Wonsak, S.; Kuehn, S.; Parzefall, U.; Casse, G.

2018-01-01

The reverse current of irradiated silicon sensors leads to self heating of the sensor and degrades the signal to noise ratio of a detector. Precise knowledge of the expected reverse current during detector operation is crucial for planning and running experiments in High Energy Physics. The dependence of the reverse current on sensor temperature and irradiation fluence is parametrized by the effective energy and the current related damage rate, respectively. In this study 18 n-in-p mini silicon strip sensors from companies Hamamatsu Photonics and Micron Semiconductor Ltd. were deployed. Measurements of the reverse current for different bias voltages were performed at temperatures of -32 ° C, -27 ° C and -23 ° C. The sensors were irradiated with reactor neutrons in Ljubljana to fluences ranging from 2 × 1014neq /cm2 to 2 × 1016neq /cm2. The measurements were performed directly after irradiation and after 10 and 30 days of room temperature annealing. The aim of the study presented in this paper is to investigate the reverse current of silicon sensors for high fluences of up to 2 × 1016neq /cm2 and compare the measurements to the parametrization models.

Up-conversion of MMW radiation to visual band using glow discharge detector and silicon detector

NASA Astrophysics Data System (ADS)

Aharon Akram, Avihai; Rozban, Daniel; Abramovich, Amir; Yitzhaky, Yitzhak; Kopeika, Natan S.

2016-10-01

In this work we describe and demonstrate a method for up-conversion of millimeter wave (MMW) radiation to the visual band using a very inexpensive miniature Glow Discharge Detector (GDD), and a silicon detector (photodetector). Here we present 100 GHz up-conversion images based on measuring the visual light emitting from the GDD rather than its electrical current. The results showed better response time of 480 ns and better sensitivity compared to the electronic detection that was performed in our previous work. In this work we performed MMW imaging based on this method using a GDD lamp, and a photodetector to measure GDD light emission.

A comparative study of silicon detector degradation under irradiation by heavy ions and relativistic protons

NASA Astrophysics Data System (ADS)

Eremin, V.; Mitina, D.; Fomichev, A.; Kiselev, O.; Egorov, N.; Eremin, I.; Shepelev, A.; Verbitskaya, E.

2018-01-01

Silicon detectors irradiated by 40Ar ions with the energy of 1.62 GeV were studied with the goal to find the parameters of radiation damage induced by ions. The measurements of the I-V characteristics, temperature dependences of the detector bulk current, deep level spectra and current pulse response were carried out for detectors irradiated within the fluence range 5×1010-2.3×1013 ion/cm2 and the obtained results were compared with the corresponding data for detectors irradiated by 23 GeV protons. It is shown that the processes of defect introduction by ions and overall radiation damage are similar to those induced by 23 GeV protons, while the introduction rates of radiation defects and current generation centers are about ten times higher for irradiation by 40Ar ions. The fact that these processes have much in common gives grounds to use the physical models and characteristic parametrization such as those developed earlier for detectors irradiated by protons and neutrons to build the long-term scenario of Si detector operation in the Time-Of-Flight diagnostic system of Super FRagment Separator designed at GSI for the future Facility for Antiproton and Ion Research, FAIR.

Vertex detectors: The state of the art and future prospects

DOE Office of Scientific and Technical Information (OSTI.GOV)

Damerell, C.J.S.

1997-01-01

We review the current status of vertex detectors (tracking microscopes for the recognition of charm and bottom particle decays). The reasons why silicon has become the dominant detector medium are explained. Energy loss mechanisms are reviewed, as well as the physics and technology of semiconductor devices, emphasizing the areas of most relevance for detectors. The main design options (microstrips and pixel devices, both CCD`s and APS`s) are discussed, as well as the issue of radiation damage, which probably implies the need to change to detector media beyond silicon for some vertexing applications. Finally, the evolution of key performance parameters overmore » the past 15 years is reviewed, and an attempt is made to extrapolate to the likely performance of detectors working at the energy frontier ten years from now.« less

Design and fabrication of a novel self-powered solid-state neutron detector

NASA Astrophysics Data System (ADS)

LiCausi, Nicholas

There is a strong interest in intercepting special nuclear materials (SNM) at national and international borders and ports for homeland security applications. Detection of SNM such as U and Pu is often accomplished by sensing their natural or induced neutron emission. Such detector systems typically use thermal neutron detectors inside a plastic moderator. In order to achieve high detection efficiency gas filled detectors are often used; these detectors require high voltage bias for operation, which complicates the system when tens or hundreds of detectors are deployed. A better type of detector would be an inexpensive solid-state detector that can be mass-produced like any other computer chip. Research surrounding solid-state detectors has been underway since the late 1990's. A simple solid-state detector employs a planar solar-cell type p-n junction and a thin conversion material that converts incident thermal neutrons into detectable alpha-particles and 7Li ions. Existing work has typically used 6LiF or 10B as this conversion layer. Although a simple planar detector can act as a highly portable, low cost detector, it is limited to relatively low detection efficiency (˜10%). To increase the efficiency, 3D perforated p-i-n silicon devices were proposed. To get high efficiency, these detectors need to be biased, resulting in increased leakage current and hence detector noise. In this research, a new type of detector structure was proposed, designed and fabricated. Among several detector structures evaluated, a honeycomb-like silicon p-n structure was selected, which is filled with natural boron as the neutron converter. A silicon p+-n diode formed on the thin silicon wall of the honeycomb structure detects the energetic alpha-particles emitted from the boron conversion layer. The silicon detection layer is fabricated to be fully depleted with an integral step during the boron filling process. This novel feature results in a simplified fabrication process. Three key advantages of the novel devices are theoretical neutron detection efficiency of ˜48%, a self-passivating structure that reduces leakage current and detector operation with no bias resulting in extremely low device noise. Processes required to fabricate the 3D type detector were explored and developed in this thesis. The detector capacitance and processing steps have been simulated with MEDICI and TSuprem-4, respectively. Lithography masks were then designed using Cadence. The fabrication process development was conducted in line with standard CMOS grade integrated circuit processing to allow for simple integration with existing fabrication facilities. A number of new processes were developed including the low pressure chemical vapor deposition of conformal boron films using diborane on very high aspect-ratio trenches and holes. Development also included methods for "wet" chemical etching and "dry" reactive ion etching of the deposited boron films. Fabricated detectors were characterized with the transmission line method, 4-point probe, I-V measurements and C-V measurements. Finally the detector response to thermal neutrons was studied. Characterization has shown significant reduction in reverse leakage current density to ˜8x10-8 A/cm2 (nearly 4 orders of magnitude over the previously published data). Results show that the fabrication process developed is capable of producing efficient (˜22.5%) solid-state thermal neutron detectors.

Ultraviolet corona detection sensor study

NASA Technical Reports Server (NTRS)

Schmitt, R. J.; MATHERN

1976-01-01

The feasibility of detecting electrical corona discharge phenomena in a space simulation chamber via emission of ultraviolet light was evaluated. A corona simulator, with a hemispherically capped point to plane electrode geometry, was used to generate corona glows over a wide range of pressure, voltage, current, electrode gap length and electrode point radius. Several ultraviolet detectors, including a copper cathode gas discharge tube and a UV enhanced silicon photodiode detector, were evaluated in the course of the spectral intensity measurements. The performance of both silicon target vidicons and silicon intensified target vidicons was evaluated analytically using the data generated by the spectroradiometer scans and the performance data supplied by the manufacturers.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Singh, Arvind, E-mail: anita@barc.gov.in; Topkar, Anita

In order to improve the gamma discrimination capability for thermal neutron measurements using silicon PIN detectors, a novel approach of use of thin epitaxial silicon PIN detectors was investigated. Thin epitaxial silicon detectors with thickness of 15 µm were developed and their performance was tested with thermal neutrons using {sup 10}B converter. The performance of this detector was compared with the performance of a 300 µm silicon detector. The results of experiments presented in this paper indicate that thin epitaxial silicon detectors can significantly improve γ discrimination for thermal neutron measurements.

Theoretical investigation of silicide Schottky barrier detector integrated in horizontal metal-insulator-silicon-insulator-metal nanoplasmonic slot waveguide.

PubMed

Zhu, Shiyang; Lo, G Q; Kwong, D L

2011-08-15

An ultracompact integrated silicide Schottky barrier detector (SBD) is designed and theoretically investigated to electrically detect the surface plasmon polariton (SPP) propagating along horizontal metal-insulator-silicon-insulator-metal nanoplasmonic slot waveguides at the telecommunication wavelength of 1550 nm. An ultrathin silicide layer inserted between the silicon core and the insulator, which can be fabricated precisely using the well-developed self-aligned silicide process, absorbs the SPP power effectively if a suitable silicide is chosen. Moreover, the Schottky barrier height in the silicide-silicon-silicide configuration can be tuned substantially by the external voltage through the Schottky effect owing to the very narrow silicon core. For a TaSi(2) detector with optimized dimensions, numerical simulation predicts responsivity of ~0.07 A/W, speed of ~60 GHz, dark current of ~66 nA at room temperature, and minimum detectable power of ~-29 dBm. The design also suggests that the device's size can be reduced and the overall performances will be further improved if a silicide with smaller permittivity is used. © 2011 Optical Society of America

32-element beta detector developed at the Institute of Electron Technology (ITE)

NASA Astrophysics Data System (ADS)

Wegrzecki, Maciej; Yakushev, Alexander; Bar, Jan; Budzyński, Tadeusz; Grabiec, Piotr; Kłos, Helena; Panas, Andrzej; Słysz, Wojciech; Stolarski, Maciej; Szmigiel, Dariusz; Wegrzecka, Iwona; Zaborowski, Michał

2014-08-01

The paper presents the design, technology and parameters of a new .silicon detector for detection of electrons (below named as beta detector) developed at the Institute of Electron Technology (ITE). The detector will be used for research on transactinide elements at the GSI Helmholtzzentrum für Schwerionenforschung GmbH, Darmstadt (GSI). The detector consists of a monolithic 32-element array with an active area diameter of 90 mm and a thickness of 0.9 mm. The starting material is a high-resistivity ν silicon wafer (5 kΩcm resistivity). 32 planar p+-ν junctions are formed by boron diffusion on the top side of the wafer. On the bottom side, an n+ region, which forms a common cathode, is formed on the entire surface by phosphorus diffusion. The array is mounted on a special epoxy-glass laminate substrate, copper-clad on both sides. Two model detectors have been fabricated and studied. Very good electrical parameters have been achieved. For the first array, with supply voltage VR = 20 V, the minimum dark current was 8 nA, the maximum dark current 97.1 nA, and the average dark current 25.1 nA. For the second array, it was 11.5 nA, 378.8 nA and 40.0 nA respectively.

Investigation of low leakage current radiation detectors on n-type 4H-SiC epitaxial layers

NASA Astrophysics Data System (ADS)

Nguyen, Khai V.; Chaudhuri, Sandeep K.; Mandal, Krishna C.

2014-09-01

The surface leakage current of high-resolution 4H-SiC epitaxial layer Schottky barrier detectors has been improved significantly after surface passivations of 4H-SiC epitaxial layers. Thin (nanometer range) layers of silicon dioxide (SiO2) and silicon nitride (Si3N4) were deposited on 4H-SiC epitaxial layers using plasma enhanced chemical vapor deposition (PECVD) on 20 μm thick n-type 4H-SiC epitaxial layers followed by the fabrication of large area (~12 mm2) Schottky barrier radiation detectors. The fabricated detectors have been characterized through current-voltage (I-V), capacitance-voltage (C-V), and alpha pulse height spectroscopy measurements; the results were compared with that of detectors fabricated without surface passivations. Improved energy resolution of ~ 0.4% for 5486 keV alpha particles was observed after passivation, and it was found that the performance of these detectors were limited by the presence of macroscopic and microscopic crystal defects affecting the charge transport properties adversely. Capacitance mode deep level transient studies (DLTS) revealed the presence of a titanium impurity related shallow level defects (Ec-0.19 eV), and two deep level defects identified as Z1/2 and Ci1 located at Ec-0.62 and ~ Ec-1.40 eV respectively.

PAMELA Space Mission: The Transition Radiation Detector

NASA Astrophysics Data System (ADS)

Ambriola, M.; Bellotti, R.; Cafagna, F.; Circella, M.; De Marzo, C.; Giglietto, N.; Marangelli, B.; Mirizzi, N.; Romita, M.; Spinelli, P.

2003-07-01

PAMELA telescope is a satellite-b orne magnetic spectrometer built to fulfill the primary scientific objectives of detecting antiparticles (antiprotons and positrons) in the cosmic rays, and to measure spectra of particles in cosmic rays. The PAMELA telescope is currently under integration and is composed of: a silicon tracker housed in a permanent magnet, a time of flight and an anticoincidence system both made of plastic scintillators, a silicon imaging calorimeter, a neutron detector and a Transition Radiation Detector (TRD). The TRD detector is composed of 9 sensitive layers of straw tubes working in proportional mode for a total of 1024 channels. Each layer is interleaved with a radiator plane made of carbon fibers. The TRD detector characteristics will be described along with its performance studied exposing the detector to particle beams of electrons, pions, muons and protons of different momenta at both CERN-PS and CERN-SPS facilities.

LHCb VELO upgrade

NASA Astrophysics Data System (ADS)

Hennessy, Karol; LHCb VELO Upgrade Collaboration

2017-02-01

The upgrade of the LHCb experiment, scheduled for LHC Run-III, scheduled to start in 2021, will transform the experiment to a trigger-less system reading out the full detector at 40 MHz event rate. All data reduction algorithms will be executed in a high-level software farm enabling the detector to run at luminosities of 2×1033 cm-2 s-1. The Vertex Locator (VELO) is the silicon vertex detector surrounding the interaction region. The current detector will be replaced with a hybrid pixel system equipped with electronics capable of reading out at 40 MHz. The upgraded VELO will provide fast pattern recognition and track reconstruction to the software trigger. The silicon pixel sensors have 55×55 μm2 pitch, and are read out by the VeloPix ASIC, from the Timepix/Medipix family. The hottest region will have pixel hit rates of 900 Mhits/s yielding a total data rate of more than 3 Tbit/s for the upgraded VELO. The detector modules are located in a separate vacuum, separated from the beam vacuum by a thin custom made foil. The foil will be manufactured through milling and possibly thinned further by chemical etching. The material budget will be minimised by the use of evaporative CO2 coolant circulating in microchannels within 400 μm thick silicon substrates. The current status of the VELO upgrade is described and latest results from operation of irradiated sensor assemblies are presented.

Prototype readout electronics and silicon strip detector study for the silicon tracking system at compressed baryonic matter experiment

NASA Astrophysics Data System (ADS)

Kasiński, Krzysztof; Szczygieł, Robert; Gryboś, Paweł

2011-10-01

This paper presents the prototype detector readout electronics for the STS (Silicon Tracking System) at CBM (Compressed Baryonic Matter) experiment at FAIR, GSI (Helmholtzzentrum fuer Schwerionenforschung GmbH) in Germany. The emphasis has been put on the strip detector readout chip and its interconnectivity with detector. Paper discusses the impact of the silicon strip detector and interconnection cable construction on the overall noise of the system and architecture of the TOT02 readout ASIC. The idea and problems of the double-sided silicon detector usage are also presented.

Low Gain Avalanche Detectors (LGAD) for particle physics and synchrotron applications

NASA Astrophysics Data System (ADS)

Moffat, N.; Bates, R.; Bullough, M.; Flores, L.; Maneuski, D.; Simon, L.; Tartoni, N.; Doherty, F.; Ashby, J.

2018-03-01

A new avalanche silicon detector concept is introduced with a low gain in the region of ten, known as a Low Gain Avalanche Detector, LGAD. The detector's characteristics are simulated via a full process simulation to obtain the required doping profiles which demonstrate the desired operational characteristics of high breakdown voltage (500 V) and a gain of 10 at 200 V reverse bias for X-ray detection. The first low gain avalanche detectors fabricated by Micron Semiconductor Ltd are presented. The doping profiles of the multiplication junctions were measured with SIMS and reproduced by simulating the full fabrication process which enabled further development of the manufacturing process. The detectors are 300 μm thick p-type silicon with a resistivity of 8.5 kΩcm, which fully depletes at 116 V. The current characteristics are presented and demonstrate breakdown voltages in excess of 500 V and a current density of 40 to 100 nAcm‑2 before breakdown measured at 20oC. The gain of the LGAD has been measured with a red laser (660 nm) and shown to be between 9 and 12 for an external bias voltage range from 150 V to 300 V.

Readout Electronics for the Forward Vertex Detector at PHENIX

NASA Astrophysics Data System (ADS)

Phillips, Michael

2010-11-01

The PHENIX experiment at RHIC at Brookhaven National Laboratory has been providing high quality physics data for over 10 years. The current PHENIX physics program will be significantly enhanced by addition of the Forward Silicon Vertex upgrade detector (FVTX) in the acceptance of existing muon arm detectors. The proposed tracker is planned to be put into operation in 2012. Each arm of the FVTX detector consist of 4 discs of silicon strip sensors combined with FPHX readout chips, designed at FNAL. The full detector consists of over 1 million active mini-strip channels with instantaneous bandwidth topping 3.4 Tb/s. The FPHX chip utilizes data push architecture with 2 serial output streams at 200 MHz. The readout electronics design consists of Read-Out Cards (ROC) located in the vicinity of the detector and Front End Modules (FEM) located in the Counting House. ROC boards combine the data from several chips, synchronizes data streams and send them to FEM over a Fiber Optics Link. The data are buffered in the FEM and then sent to a standard PHENIX DAQ interface upon Level-1 trigger request. We will present the current status of the readout electronics development and testing, including tests with data from production wedges.

Temperature dependence of the response of ultra fast silicon detectors

NASA Astrophysics Data System (ADS)

Mulargia, R.; Arcidiacono, R.; Bellora, A.; Boscardin, M.; Cartiglia, N.; Cenna, F.; Cirio, R.; Dalla Betta, G. F.; Durando, S.; Fadavi, A.; Ferrero, M.; Galloway, Z.; Gruey, B.; Freeman, P.; Kramberger, G.; Mandic, I.; Monaco, V.; Obertino, M.; Pancheri, L.; Paternoster, G.; Ravera, F.; Sacchi, R.; Sadrozinski, H. F. W.; Seiden, A.; Sola, V.; Spencer, N.; Staiano, A.; Wilder, M.; Woods, N.; Zatserklyaniy, A.

2016-12-01

The Ultra Fast Silicon Detectors (UFSD) are a novel concept of silicon detectors based on the Low Gain Avalanche Diode (LGAD) technology, which are able to obtain time resolution of the order of few tens of picoseconds. First prototypes with different geometries (pads/pixels/strips), thickness (300 and 50 μm) and gain (between 5 and 20) have been recently designed and manufactured by CNM (Centro Nacional de Microelectrónica, Barcelona) and FBK (Fondazione Bruno Kessler, Trento). Several measurements on these devices have been performed in laboratory and in beam test and a dependence of the gain on the temperature has been observed. Some of the first measurements will be shown (leakage current, breakdown voltage, gain and time resolution on the 300 μm from FBK and gain on the 50 μm-thick sensor from CNM) and a comparison with the theoretically predicted trend will be discussed.

Characterization of Photon-Counting Detector Responsivity for Non-Linear Two-Photon Absorption Process

NASA Technical Reports Server (NTRS)

Sburlan, S. E.; Farr, W. H.

2011-01-01

Sub-band absorption at 1550 nm has been demonstrated and characterized on silicon Geiger mode detectors which normally would be expected to have no response at this wavelength. We compare responsivity measurements to singlephoton absorption for wavelengths slightly above the bandgap wavelength of silicon (approx. 1100 microns). One application for this low efficiency sub-band absorption is in deep space optical communication systems where it is desirable to track a 1030 nm uplink beacon on the same flight terminal detector array that monitors a 1550 nm downlink signal for pointingcontrol. The currently observed absorption at 1550 nm provides 60-70 dB of isolation compared to the response at 1064 nm, which is desirable to avoid saturation of the detector by scattered light from the downlink laser.

Limitations on energy resolution of segmented silicon detectors

NASA Astrophysics Data System (ADS)

Wiącek, P.; Chudyba, M.; Fiutowski, T.; Dąbrowski, W.

2018-04-01

In the paper experimental study of charge division effects and energy resolution of X-ray silicon pad detectors are presented. The measurements of electrical parameters, capacitances and leakage currents, for six different layouts of pad arrays are reported. The X-ray spectra have been measured using a custom developed dedicated low noise front-end electronics. The spectra measured for six different detector layouts have been analysed in detail with particular emphasis on quantitative evaluation of charge division effects. Main components of the energy resolution due to Fano fluctuations, electronic noise, and charge division, have been estimated for six different sensor layouts. General recommendations regarding optimisation of pad sensor layout for achieving best possible energy resolution have been formulated.

Particle identification using digital pulse shape discrimination in a nTD silicon detector with a 1 GHz sampling digitizer

NASA Astrophysics Data System (ADS)

Mahata, K.; Shrivastava, A.; Gore, J. A.; Pandit, S. K.; Parkar, V. V.; Ramachandran, K.; Kumar, A.; Gupta, S.; Patale, P.

2018-06-01

In beam test experiments have been carried out for particle identification using digital pulse shape analysis in a 500 μm thick Neutron Transmutation Doped (nTD) silicon detector with an indigenously developed FPGA based 12 bit resolution, 1 GHz sampling digitizer. The nTD Si detector was used in a low-field injection setup to detect light heavy-ions produced in reactions of ∼ 5 MeV/A 7Li and 12C beams on different targets. Pulse height, rise time and current maximum have been obtained from the digitized charge output of a high bandwidth charge and current sensitive pre-amplifier. Good isotopic separation have been achieved using only the digitized charge output in case of light heavy-ions. The setup can be used for charged particle spectroscopy in nuclear reactions involving light heavy-ions around the Coulomb barrier energies.

Passivation of long-wave infrared InAs/GaSb strained layer superlattice detectors

NASA Astrophysics Data System (ADS)

Plis, E.; Kutty, M. N.; Myers, S.; Kim, H. S.; Gautam, N.; Dawson, L. R.; Krishna, S.

2011-05-01

We have investigated various passivation techniques for type-II InAs/GaSb strained layer superlattice (SLS) detectors with p-i-n and PbIbN designs with a 100%-cut-off wavelength of ˜12 μm at 77 K. The passivation schemes include dielectric deposition (silicon nitride (SiN x), silicon dioxide (SiO 2), photoresist (SU-8)), chalcogenide treatments (zinc sulfide (ZnS), ammonium sulfide [(NH 4) 2S]), and electrochemical sulphur deposition. [(NH 4) 2S] passivation and electrochemical sulphur passivation (ECP) showed the better performances, improving the dark current density by factors of 200 and 25 (p-i-n detector) and ˜3 and 54 (PbIbN detector), respectively ( T = 77 K, -0.1 V of applied bias). The specific detectivity D* was improved by a factor of 2 and by an order of magnitude for (NH 4) 2S and ECP passivated PbIbN detectors, respectively.

Monolithic short wave infrared (SWIR) detector array

NASA Technical Reports Server (NTRS)

1983-01-01

A monolithic self-scanned linear detector array was developed for remote sensing in the 1.1- 2.4-micron spectral region. A high-density IRCCD test chip was fabricated to verify new design approaches required for the detector array. The driving factors in the Schottky barrier IRCCD (Pdsub2Si) process development are the attainment of detector yield, uniformity, adequate quantum efficiency, and lowest possible dark current consistent with radiometric accuracy. A dual-band module was designed that consists of two linear detector arrays. The sensor architecture places the floating diffusion output structure in the middle of the chip, away from the butt edges. A focal plane package was conceptualized and includes a polycrystalline silicon substrate carrying a two-layer, thick-film interconnecting conductor pattern and five epoxy-mounted modules. A polycrystalline silicon cover encloses the modules and bond wires, and serves as a radiation and EMI shield, thermal conductor, and contamination seal.

Substrate and Passivation Techniques for Flexible Amorphous Silicon-Based X-ray Detectors

PubMed Central

Marrs, Michael A.; Raupp, Gregory B.

2016-01-01

Flexible active matrix display technology has been adapted to create new flexible photo-sensing electronic devices, including flexible X-ray detectors. Monolithic integration of amorphous silicon (a-Si) PIN photodiodes on a flexible substrate poses significant challenges associated with the intrinsic film stress of amorphous silicon. This paper examines how altering device structuring and diode passivation layers can greatly improve the electrical performance and the mechanical reliability of the device, thereby eliminating one of the major weaknesses of a-Si PIN diodes in comparison to alternative photodetector technology, such as organic bulk heterojunction photodiodes and amorphous selenium. A dark current of 0.5 pA/mm2 and photodiode quantum efficiency of 74% are possible with a pixelated diode structure with a silicon nitride/SU-8 bilayer passivation structure on a 20 µm-thick polyimide substrate. PMID:27472329

Substrate and Passivation Techniques for Flexible Amorphous Silicon-Based X-ray Detectors.

PubMed

Marrs, Michael A; Raupp, Gregory B

2016-07-26

Flexible active matrix display technology has been adapted to create new flexible photo-sensing electronic devices, including flexible X-ray detectors. Monolithic integration of amorphous silicon (a-Si) PIN photodiodes on a flexible substrate poses significant challenges associated with the intrinsic film stress of amorphous silicon. This paper examines how altering device structuring and diode passivation layers can greatly improve the electrical performance and the mechanical reliability of the device, thereby eliminating one of the major weaknesses of a-Si PIN diodes in comparison to alternative photodetector technology, such as organic bulk heterojunction photodiodes and amorphous selenium. A dark current of 0.5 pA/mm² and photodiode quantum efficiency of 74% are possible with a pixelated diode structure with a silicon nitride/SU-8 bilayer passivation structure on a 20 µm-thick polyimide substrate.

Analysis and Quantification of Coupling Mechanisms of External Signal Perturbations on Silicon Detectors for Particle Physics Experiments

NASA Astrophysics Data System (ADS)

Arteche, F.; Rivetta, C.; Iglesias, M.; Echeverria, I.

2016-05-01

Silicon detectors have been used in astrophysics satellites and particle detectors for high energy physics (HEP) experiments. For HEP applications, EMC studies have been conducted in silicon detectors to characterize the impact of external noise on the system. They have shown that problems associated with the new generation of silicon detectors are related with interferences generated by the power supplies and auxiliary equipment connected to the device. Characterization of these interferences along with the coupling and their propagation into the susceptible front-end circuits is required for a successful integration of these systems. This paper presents the analysis of the sensitivity curves and coupling mechanisms between the noise and the front-end electronics that have been observed during the characterization of two silicon detector prototypes: the CMS-Silicon tracker detector (CMS-ST) and Silicon Vertex Detector (Belle II-SVD). As a result of these studies, it is possible to identify critical elements in prototypes to take corrective actions in the design and improve the front-end electronics performance.

SiPM photosensors and fast timing readout for the Barrel Time-of-Flight detector in bar PANDA

NASA Astrophysics Data System (ADS)

Suzuki, K.

2018-03-01

The Barrel Time-of-Flight detector system will be installed in the upcoming bar PANDA experiment at FAIR in Germany. The detector has a barrel shape of phi=0.5 m and 1.8 m long, covering about 5 m2, which corresponds to the laboratory polar angle coverage of 22o<θ<140o. The detector is a scintillation tile hodoscope. A single scintillation tile segment has a dimension of 90× 30 mm2 and 5 mm thickness, and photons are detected by Silicon Photomultipliers at both ends. 4 Silicon Photomultipliers are combined to work as a single sensor in order to increase the sensitive area and to improve the timing performance. In total, the system consists of 1920 scintillator tiles, 3840 readout channels, and makes use of 15360 Silicon Photomultiplier sensors. In this paper, the requirement, design and the result of an actual performance test of the bar PANDA Barrel Time-of-Flight detector are presented. The test shows that the current design fulfils satisfactorily the required timing performance (σt~ 56 ps) and the timing performance depends little on the hit position on the surface.

Flexible amorphous silicon PIN diode x-ray detectors

NASA Astrophysics Data System (ADS)

Marrs, Michael; Bawolek, Edward; Smith, Joseph T.; Raupp, Gregory B.; Morton, David

2013-05-01

A low temperature amorphous silicon (a-Si) thin film transistor (TFT) and amorphous silicon PIN photodiode technology for flexible passive pixel detector arrays has been developed using active matrix display technology. The flexible detector arrays can be conformed to non-planar surfaces with the potential to detect x-rays or other radiation with an appropriate conversion layer. The thin, lightweight, and robust backplanes may enable the use of highly portable x-ray detectors for use in the battlefield or in remote locations. We have fabricated detector arrays up to 200 millimeters along the diagonal on a Gen II (370 mm x 470 mm rectangular substrate) using plasma enhanced chemical vapor deposition (PECVD) a-Si as the active layer and PECVD silicon nitride (SiN) as the gate dielectric and passivation. The a-Si based TFTs exhibited an effective saturation mobility of 0.7 cm2/V-s, which is adequate for most sensing applications. The PIN diode material was fabricated using a low stress amorphous silicon (a-Si) PECVD process. The PIN diode dark current was 1.7 pA/mm2, the diode ideality factor was 1.36, and the diode fill factor was 0.73. We report on the critical steps in the evolution of the backplane process from qualification of the low temperature (180°C) TFT and PIN diode process on the 150 mm pilot line, the transfer of the process to flexible plastic substrates, and finally a discussion and demonstration of the scale-up to the Gen II (370 x 470 mm) panel scale pilot line.

Highly-Integrated CMOS Interface Circuits for SiPM-Based PET Imaging Systems.

PubMed

Dey, Samrat; Lewellen, Thomas K; Miyaoka, Robert S; Rudell, Jacques C

2012-01-01

Recent developments in the area of Positron Emission Tomography (PET) detectors using Silicon Photomultipliers (SiPMs) have demonstrated the feasibility of higher resolution PET scanners due to a significant reduction in the detector form factor. The increased detector density requires a proportionally larger number of channels to interface the SiPM array with the backend digital signal processing necessary for eventual image reconstruction. This work presents a CMOS ASIC design for signal reducing readout electronics in support of an 8×8 silicon photomultiplier array. The row/column/diagonal summation circuit significantly reduces the number of required channels, reducing the cost of subsequent digitizing electronics. Current amplifiers are used with a single input from each SiPM cathode. This approach helps to reduce the detector loading, while generating all the necessary row, column and diagonal addressing information. In addition, the single current amplifier used in our Pulse-Positioning architecture facilitates the extraction of pulse timing information. Other components under design at present include a current-mode comparator which enables threshold detection for dark noise current reduction, a transimpedance amplifier and a variable output impedance I/O driver which adapts to a wide range of loading conditions between the ASIC and lines with the off-chip Analog-to-Digital Converters (ADCs).

Highly-Integrated CMOS Interface Circuits for SiPM-Based PET Imaging Systems

PubMed Central

Dey, Samrat; Lewellen, Thomas K.; Miyaoka, Robert S.; Rudell, Jacques C.

2013-01-01

Recent developments in the area of Positron Emission Tomography (PET) detectors using Silicon Photomultipliers (SiPMs) have demonstrated the feasibility of higher resolution PET scanners due to a significant reduction in the detector form factor. The increased detector density requires a proportionally larger number of channels to interface the SiPM array with the backend digital signal processing necessary for eventual image reconstruction. This work presents a CMOS ASIC design for signal reducing readout electronics in support of an 8×8 silicon photomultiplier array. The row/column/diagonal summation circuit significantly reduces the number of required channels, reducing the cost of subsequent digitizing electronics. Current amplifiers are used with a single input from each SiPM cathode. This approach helps to reduce the detector loading, while generating all the necessary row, column and diagonal addressing information. In addition, the single current amplifier used in our Pulse-Positioning architecture facilitates the extraction of pulse timing information. Other components under design at present include a current-mode comparator which enables threshold detection for dark noise current reduction, a transimpedance amplifier and a variable output impedance I/O driver which adapts to a wide range of loading conditions between the ASIC and lines with the off-chip Analog-to-Digital Converters (ADCs). PMID:24301987

Stacked Metal Silicide/Silicon Far-Infrared Detectors

NASA Technical Reports Server (NTRS)

Maserjian, Joseph

1988-01-01

Selective doping of silicon in proposed metal silicide/silicon Schottky-barrier infrared photodetector increases maximum detectable wavelength. Stacking layers to form multiple Schottky barriers increases quantum efficiency of detector. Detectors of new type enhance capabilities of far-infrared imaging arrays. Grows by molecular-beam epitaxy on silicon waferscontaining very-large-scale integrated circuits. Imaging arrays of detectors made in monolithic units with image-preprocessing circuitry.

Enabling Large Focal Plane Arrays Through Mosaic Hybridization

NASA Technical Reports Server (NTRS)

Miller, TImothy M.; Jhabvala, Christine A.; Leong, Edward; Costen, Nicholas P.; Sharp, Elmer; Adachi, Tomoko; Benford, Dominic

2012-01-01

We have demonstrated advances in mosaic hybridization that will enable very large format far-infrared detectors. Specifically we have produced electrical detector models via mosaic hybridization yielding superconducting circuit paths by hybridizing separately fabricated sub-units onto a single detector unit. The detector model was made on a 100mm diameter wafer while four model readout quadrant chips were made from a separate 100mm wafer. The individually fabricated parts were hybridized using a flip-chip bonder to assemble the detector-readout stack. Once all of the hybridized readouts were in place, a single, large and thick silicon substrate was placed on the stack and attached with permanent epoxy to provide strength and a Coefficient of Thermal Expansion match to the silicon components underneath. Wirebond pads on the readout chips connect circuits to warm readout electronics; and were used to validate the successful superconducting electrical interconnection of the model mosaic-hybrid detector. This demonstration is directly scalable to 150 mm diameter wafers, enabling pixel areas over ten times the area currently available.

Monolithic integration of hybrid perovskite single crystals with heterogenous substrate for highly sensitive X-ray imaging

NASA Astrophysics Data System (ADS)

Wei, Wei; Zhang, Yang; Xu, Qiang; Wei, Haotong; Fang, Yanjun; Wang, Qi; Deng, Yehao; Li, Tao; Gruverman, Alexei; Cao, Lei; Huang, Jinsong

2017-04-01

The monolithic integration of new optoelectronic materials with well-established inexpensive silicon circuitry is leading to new applications, functionality and simple readouts. Here, we show that single crystals of hybrid perovskites can be integrated onto virtually any substrates, including silicon wafers, through facile, low-temperature, solution-processed molecular bonding. The brominated (3-aminopropyl)triethoxysilane molecule binds the native oxide of silicon and participates in the perovskite crystal with its ammonium bromide group, yielding a solid mechanical and electrical connection. The dipole of the bonding molecule reduces device noise while retaining signal intensity. The reduction of dark current enables the detectors to be operated at increased bias, resulting in a sensitivity of 2.1 × 104 µC Gyair-1 cm-2 under 8 keV X-ray radiation, which is over a thousand times higher than the sensitivity of amorphous selenium detectors. X-ray imaging with both perovskite pixel detectors and linear array detectors reduces the total dose by 15-120-fold compared with state-of-the-art X-ray imaging systems.

Development of a custom on-line ultrasonic vapour analyzer and flow meter for the ATLAS inner detector, with application to Cherenkov and gaseous charged particle detectors

NASA Astrophysics Data System (ADS)

Alhroob, M.; Bates, R.; Battistin, M.; Berry, S.; Bitadze, A.; Bonneau, P.; Bousson, N.; Boyd, G.; Bozza, G.; Crespo-Lopez, O.; Degeorge, C.; Deterre, C.; DiGirolamo, B.; Doubek, M.; Favre, G.; Godlewski, J.; Hallewell, G.; Hasib, A.; Katunin, S.; Langevin, N.; Lombard, D.; Mathieu, M.; McMahon, S.; Nagai, K.; O'Rourke, A.; Pearson, B.; Robinson, D.; Rossi, C.; Rozanov, A.; Strauss, M.; Vacek, V.; Zwalinski, L.

2015-03-01

Precision sound velocity measurements can simultaneously determine binary gas composition and flow. We have developed an analyzer with custom microcontroller-based electronics, currently used in the ATLAS Detector Control System, with numerous potential applications. Three instruments monitor C3F8 and CO2 coolant leak rates into the nitrogen envelopes of the ATLAS silicon microstrip and Pixel detectors. Two further instruments will aid operation of the new thermosiphon coolant recirculator: one of these will monitor air leaks into the low pressure condenser while the other will measure return vapour flow along with C3F8/C2F6 blend composition, should blend operation be necessary to protect the ATLAS silicon tracker under increasing LHC luminosity. We describe these instruments and their electronics.

The LHCb VELO upgrade

NASA Astrophysics Data System (ADS)

Dosil Suárez, Álvaro; LHCb VELO Upgrade Group

2016-07-01

The upgrade of the LHCb experiment, planned for 2019, will transform the experiment to a trigger-less system reading out the full detector at 40 MHz event rate. All data reduction algorithms will be executed in a high-level software farm. The upgraded detector will run at luminosities of 2×1033 cm-2 s-1 and probe physics beyond the Standard Model in the heavy flavour sector with unprecedented precision. The Vertex Locator (VELO) is the silicon vertex detector surrounding the interaction region. The current detector will be replaced with a hybrid pixel system equipped with electronics capable of reading out at 40 MHz. The detector comprises silicon pixel sensors with 55×55 μm2 pitch, read out by the VeloPix ASIC, based on the TimePix/MediPix family. The hottest region will have pixel hit rates of 900 Mhits/s yielding a total data rate more than 3 Tbit/s for the upgraded VELO. The detector modules are located in a separate vacuum, separated from the beam vacuum by a thin custom made foil. The detector halves are retracted when the beams are injected and closed at stable beams, positioning the first sensitive pixel at 5.1 mm from the beams. The material budget will be minimised by the use of evaporative CO2 coolant circulating in microchannels within 400 μm thick silicon substrates.

Status and Construction of the Belle II DEPFET pixel system

NASA Astrophysics Data System (ADS)

Lütticke, Florian

2014-06-01

DEpleted P-channel Field Effect Transistor (DEPFET) active pixel detectors combine detection with a first amplification stage in a fully depleted detector, resulting in an superb signal-to-noise ratio even for thin sensors. Two layers of thin (75 micron) silicon DEPFET pixels will be used as the innermost vertex system, very close to the beam pipe in the Belle II detector at the SuperKEKB facility. The status of the 8 million DEPFET pixels detector, latest developments and current system tests will be discussed.

Spiral biasing adaptor for use in Si drift detectors and Si drift detector arrays

DOEpatents

Li, Zheng; Chen, Wei

2016-07-05

A drift detector array, preferably a silicon drift detector (SDD) array, that uses a low current biasing adaptor is disclosed. The biasing adaptor is customizable for any desired geometry of the drift detector single cell with minimum drift time of carriers. The biasing adaptor has spiral shaped ion-implants that generate the desired voltage profile. The biasing adaptor can be processed on the same wafer as the drift detector array and only one biasing adaptor chip/side is needed for one drift detector array to generate the voltage profiles on the front side and back side of the detector array.

Novel detectors for silicon based microdosimetry, their concepts and applications

NASA Astrophysics Data System (ADS)

Rosenfeld, Anatoly B.

2016-02-01

This paper presents an overview of the development of semiconductor microdosimetry and the most current (state-of-the-art) Silicon on Insulator (SOI) detectors for microdosimetry based mainly on research and development carried out at the Centre for Medical Radiation Physics (CMRP) at the University of Wollongong with collaborators over the last 18 years. In this paper every generation of CMRP SOI microdosimeters, including their fabrication, design, and electrical and charge collection characterisation are presented. A study of SOI microdosimeters in various radiation fields has demonstrated that under appropriate geometrical scaling, the response of SOI detectors with the well-known geometry of microscopically sensitive volumes will record the energy deposition spectra representative of tissue cells of an equivalent shape. This development of SOI detectors for microdosimetry with increased complexity has improved the definition of microscopic sensitive volume (SV), which is modelling the deposition of ionising energy in a biological cell, that are led from planar to 3D SOI detectors with an array of segmented microscopic 3D SVs. The monolithic ΔE-E silicon telescope, which is an alternative to the SOI silicon microdosimeter, is presented, and as an example, applications of SOI detectors and ΔE-E monolithic telescope for microdosimetery in proton therapy field and equivalent neutron dose measurements out of field are also presented. An SOI microdosimeter "bridge" with 3D SVs can derive the relative biological effectiveness (RBE) in 12C ion radiation therapy that matches the tissue equivalent proportional counter (TEPC) quite well, but with outstanding spatial resolution. The use of SOI technology in experimental microdosimetry offers simplicity (no gas system or HV supply), high spatial resolution, low cost, high count rates, and the possibility of integrating the system onto a single device with other types of detectors.

Status and Plan for The Upgrade of The CMS Pixel Detector

NASA Astrophysics Data System (ADS)

Lu, Rong-Shyang; CMS Collaboration

2016-04-01

The silicon pixel detector is the innermost component of the CMS tracking system and plays a crucial role in the all-silicon CMS tracker. While the current pixel tracker is designed for and performing well at an instantaneous luminosity of up to 1 ×1034cm-2s-1, it can no longer be operated efficiently at significantly higher values. Based on the strong performance of the LHC accelerator, it is anticipated that peak luminosities of two times the design luminosity are likely to be reached before 2018 and perhaps significantly exceeded in the running period until 2022, referred to as LHC Run 3. Therefore, an upgraded pixel detector, referred to as the phase 1 upgrade, is planned for the year-end technical stop in 2016. With a new pixel readout chip (ROC), an additional fourth layer, two additional endcap disks, and a significantly reduced material budget the upgraded pixel detector will be able to sustain the efficiency of the pixel tracker at the increased requirements imposed by high luminosities and pile-up. The main new features of the upgraded pixel detector will be an ultra-light mechanical design, a digital readout chip with higher rate capability and a new cooling system. These and other design improvements, along with results of Monte Carlo simulation studies for the expected performance of the new pixel detector, will be discussed and compared to those of the current CMS detector.

Fabrication of Silicon Backshorts with Improved Out-of-Band Rejection for Waveguide-Coupled Superconducting Detectors

NASA Technical Reports Server (NTRS)

Crowe, Erik J.; Bennett, Charles L.; Chuss, David T.; Denis, Kevin L.; Eimer, Joseph; Lourie, Nathan; Marriage, Tobias; Moseley, Samuel H.; Rostem, Karwan; Stevenson, Thomas R.;

Prototype Compton imager for special nuclear material

NASA Astrophysics Data System (ADS)

Wulf, Eric A.; Phlips, Bernard F.; Kurfess, James D.; Novikova, Elena I.; Fitzgerald, Carrie

2006-05-01

Compton imagers offer a method for passive detection of nuclear material over background radiation. A prototype Compton imager has been constructed using 8 layers of silicon detectors. Each layer consists of a 2×2 array of 2 mm thick cross-strip double-sided silicon detectors with active areas of 5.7 × 5.7 cm2 and 64 strips per side. The detectors are daisy-chained together in the array so that only 256 channels of electronics are needed to read-out each layer of the instrument. This imager is a prototype for a large, high-efficiency Compton imager that will meet operational requirements of Homeland Security for detection of shielded uranium. The instrument can differentiate between different radioisotopes using the reconstructed gamma-ray energy and can also show the location of the emissions with respect to the detector location. Results from the current instrument as well as simulations of the next generation instrument are presented.

Practical photon number detection with electric field-modulated silicon avalanche photodiodes.

PubMed

Thomas, O; Yuan, Z L; Shields, A J

2012-01-24

Low-noise single-photon detection is a prerequisite for quantum information processing using photonic qubits. In particular, detectors that are able to accurately resolve the number of photons in an incident light pulse will find application in functions such as quantum teleportation and linear optics quantum computing. More generally, such a detector will allow the advantages of quantum light detection to be extended to stronger optical signals, permitting optical measurements limited only by fluctuations in the photon number of the source. Here we demonstrate a practical high-speed device, which allows the signals arising from multiple photon-induced avalanches to be precisely discriminated. We use a type of silicon avalanche photodiode in which the lateral electric field profile is strongly modulated in order to realize a spatially multiplexed detector. Clearly discerned multiphoton signals are obtained by applying sub-nanosecond voltage gates in order to restrict the detector current.

Developments towards the LHCb VELO upgrade

NASA Astrophysics Data System (ADS)

Cid Vidal, Xabier

2016-09-01

The Vertex Locator (VELO) is a silicon strip detector surrounding the interaction region of the LHCb experiment. The upgrade of the VELO is planned to be installed in 2019-2020, and the current detector will be replaced by a hybrid pixel system equipped with electronics capable of reading out at a rate of 40 MHz. The new detector is designed to withstand the radiation dose expected at an integrated luminosity of 50 fb-1. The detector will be composed of silicon pixel sensors, read out by the VeloPix ASIC that is being developed based on the TimePix/MediPix family. The prototype sensors for the VELO upgrade are being irradiated in five different facilities and the post-irradiation performance is being measured with testbeams, and in the lab. These proceedings present the VELO upgrade and briefly discuss the results of the sensor testing campaign.

The edge transient-current technique (E-TCT) with high energy hadron beam

NASA Astrophysics Data System (ADS)

Gorišek, Andrej; Cindro, Vladimir; Kramberger, Gregor; Mandić, Igor; Mikuž, Marko; Muškinja, Miha; Zavrtanik, Marko

2016-09-01

We propose a novel way to investigate the properties of silicon and CVD diamond detectors for High Energy Physics experiments complementary to the already well-established E-TCT technique using laser beam. In the proposed setup the beam of high energy hadrons (MIPs) is used instead of laser beam. MIPs incident on the detector in the direction parallel to the readout electrode plane and perpendicular to the edge of the detector. Such experiment could prove very useful to study CVD diamond detectors that are almost inaccessible for the E-TCT measurements with laser due to large band-gap as well as to verify and complement the E-TCT measurements of silicon. The method proposed is being tested at CERN in a beam of 120 GeV hadrons using a reference telescope with track resolution at the DUT of few μm. The preliminary results of the measurements are presented.

Analyzing Noise for the Muon Silicon Scanner

DOE Office of Scientific and Technical Information (OSTI.GOV)

Marchan, Miguelangel; Utes, Michael

2017-01-01

The development of a silicon muon tomography detector is a joint project between Fermilab and National Security Technologies, LLC. The goal of this detector is to detect nuclear materials better than technology in the past. Using silicon strip detectors and readout chips used by experiments at CERN we have been developing the detector. This summer we have been testing components of the detector and have been analyzing noise characteristics.

Low-temperature TCT characterization of heavily proton irradiated p-type magnetic Czochralski silicon detectors

NASA Astrophysics Data System (ADS)

Härkönen, J.; Tuovinen, E.; Luukka, P.; Kassamakov, I.; Autioniemi, M.; Tuominen, E.; Sane, P.; Pusa, P.; Räisänen, J.; Eremin, V.; Verbitskaya, E.; Li, Z.

2007-12-01

n +/p -/p + pad detectors processed at the Microelectronics Center of Helsinki University of Technology on boron-doped p-type high-resistivity magnetic Czochralski (MCz-Si) silicon substrates have been investigated by the transient current technique (TCT) measurements between 100 and 240 K. The detectors were irradiated by 9 MeV protons at the Accelerator Laboratory of University of Helsinki up to 1 MeV neutron equivalent fluence of 2×10 15 n/cm 2. In some of the detectors the thermal donors (TD) were introduced by intentional heat treatment at 430 °C. Hole trapping time constants and full depletion voltage values were extracted from the TCT data. We observed that hole trapping times in the order of 10 ns were found in heavily (above 1×10 15 n eq/cm 2) irradiated samples. These detectors could be fully depleted below 500 V in the temperature range of 140-180 K.

Development of phonon-mediated cryogenic particle detectors with electron and nuclear recoil discrimination

NASA Astrophysics Data System (ADS)

Nam, Sae Woo

1999-10-01

Observations have shown that galaxies, including our own, are surrounded by halos of ``dark matter''. One possibility is that this may be an undiscovered form of matter, weakly interacting massive particles (WIMPs). This thesis describes the development of silicon based cryogenic particle detectors designed to directly detect interactions with these WIMPs. These detectors are part of a new class of detectors which are able to reject background events by simultaneously measuring energy deposited into phonons versus electron hole pairs. By using the phonon sensors with the ionization sensors to compare the partitioning of energy between phonons and ionizations we can discriminate between electron recoil events (background radiation) and nuclear recoil events (dark matter events). These detectors with built-in background rejection are a major advance in background rejection over previous searches. Much of this thesis will describe work in scaling the detectors from / g prototype devices to a fully functional prototype 100g dark matter detector. In particular, many sensors were fabricated and tested to understand the behavior of our phonon sensors, Quasipartice trapping assisted Electrothermal feedback Transition edge sensors (QETs). The QET sensors utilize aluminum quasiparticle traps attached to tungsten superconducting transition edge sensors patterned on a silicon substrate. The tungsten lines are voltage biased and self-regulate in the transition region. Phonons from particle interactions within the silicon propogate to the surface where they are absorbed by the aluminum generating quasiparticles in the aluminum. The quasiparticles diffuse into the tungsten and couple energy into the tungsten electron system. Consequently, the tungsten increases in resistance and causes a current pulse which is measured with a high bandwidth SQUID system. With this advanced sensor technology, we were able to demonstrate detectors with xy position sensitivity with electron and nuclear recoil discrimination. Furthermore, early results from running the 100g detector in the Stanford Underground Facility (SUF) indicate that competitive dark matter results are achievable with the current detector design. Much of the design and testing of the experimental apparatus and instrumentation is described as well.

A Silicon SPECT System for Molecular Imaging of the Mouse Brain.

PubMed

Shokouhi, Sepideh; Fritz, Mark A; McDonald, Benjamin S; Durko, Heather L; Furenlid, Lars R; Wilson, Donald W; Peterson, Todd E

2007-01-01

We previously demonstrated the feasibility of using silicon double-sided strip detectors (DSSDs) for SPECT imaging of the activity distribution of iodine-125 using a 300-micrometer thick detector. Based on this experience, we now have developed fully customized silicon DSSDs and associated readout electronics with the intent of developing a multi-pinhole SPECT system. Each DSSD has a 60.4 mm × 60.4 mm active area and is 1 mm thick. The strip pitch is 59 micrometers, and the readout of the 1024 strips on each side gives rise to a detector with over one million pixels. Combining four high-resolution DSSDs into a SPECT system offers an unprecedented space-bandwidth product for the imaging of single-photon emitters. The system consists of two camera heads with two silicon detectors stacked one behind the other in each head. The collimator has a focused pinhole system with cylindrical-shaped pinholes that are laser-drilled in a 250 μm tungsten plate. The unique ability to collect projection data at two magnifications simultaneously allows for multiplexed data at high resolution to be combined with lower magnification data with little or no multiplexing. With the current multi-pinhole collimator design, our SPECT system will be capable of offering high spatial resolution, sensitivity and angular sampling for small field-of-view applications, such as molecular imaging of the mouse brain.

Gluing silicon with silicone

NASA Astrophysics Data System (ADS)

Abt, I.; Fox, H.; Moshous, B.; Richter, R. H.; Riechmann, K.; Rietz, M.; Riedl, J.; Denis, R. St; Wagner, W.

1998-02-01

Problems and solutions concerning the gluing of silicon detectors are discussed. The R & D work for the HERA- B vertex detector system led to gluing studies with epoxy and silicone-based adhesives used on ceramics and carbon fibre. The HERA- B solution using a silicone glue is presented.

Enabling Large Focal Plane Arrays Through Mosaic Hybridization

NASA Technical Reports Server (NTRS)

Miller, Timothy M.; Jhabvala, Christine A.; Leong, Edward; Costen, Nick P.; Sharp, Elmer; Adachi, Tomoko; Benford, Dominic J.

2012-01-01

We have demonstrated advances in mosaic hybridization that will enable very large format far-infrared detectors. Specifically we have produced electrical detector models via mosaic hybridization yielding superconducting circuit patbs by hybridizing separately fabricated sub-units onto a single detector unit. The detector model was made on a 100mm diameter wafer while four model readout quadrant chips were made from a separate 100mm wafer. The individually fabric.ted parts were hybridized using a Suss FCI50 flip chip bonder to assemble the detector-readout stack. Once all of the hybridized readouts were in place, a single, large and thick silicon substrate was placed on the stack and attached with permanent epoxy to provide strength and a Coefficient of Thermal Expansion match to the silicon components underneath. Wirebond pads on the readout chips connect circuits to warm readout electronics; and were used to validate the successful superconducting electrical interconnection of the model mosaic-hybrid detector. This demonstration is directly scalable to 150 mm diameter wafers, enabling pixel areas over ten times the area currently available.

IRAC test report. Gallium doped silicon band 2: Read noise and dark current

NASA Technical Reports Server (NTRS)

Lamb, Gerald; Shu, Peter; Mather, John; Ewin, Audrey; Bowser, Jeffrey

1987-01-01

A direct readout infrared detector array, a candidate for the Space Infrared Telescope Facility (SIRTF) Infrared Array Camera (IRAC), has been tested. The array has a detector surface of gallium doped silicon, bump bonded to a 58x62 pixel MOSFET multiplexer on a separate chip. Although this chip and system do not meet all the SIRTF requirements, the critically important read noise is within a factor of 3 of the requirement. Significant accomplishments of this study include: (1) development of a low noise correlated double sampling readout system with a readout noise of 127 to 164 electrons (based on the detector integrator capacitance of 0.1 pF); (2) measurement of the readout noise of the detector itself, ranging from 123 to 214 electrons with bias only (best to worst pixel), and 256 to 424 electrons with full clocking in normal operation at 5.4 K where dark current is small. Thirty percent smaller read noises are obtained at a temperature of 15K; (3) measurement of the detector response versus integration time, showing significant nonlinear behavior for large signals, well below the saturation level; and (4) development of a custom computer interface and suitable software for collection, analysis and display of data.

Small area silicon diffused junction X-ray detectors

NASA Technical Reports Server (NTRS)

Walton, J. T.; Pehl, R. H.; Larsh, A. E.

1982-01-01

The low-temperature performance of silicon diffused junction detectors in the measurement of low energy X-rays is reported. The detectors have an area of 0.04 sq cm and a thickness of 100 microns. The spectral resolutions of these detectors were found to be in close agreement with expected values, indicating that the defects introduced by the high-temperature processing required in the device fabrication were not deleteriously affecting the detection of low-energy X-rays. Device performance over a temperature range of 77 K to 150 K is given. These detectors were designed to detect low-energy X-rays in the presence of minimum ionizing electrons. The successful application of silicon-diffused junction technology to X-ray detector fabrication may facilitate the development of other novel silicon X-ray detector designs.

Timing performance of the silicon PET insert probe

PubMed Central

Studen, A.; Burdette, D.; Chesi, E.; Cindro, V.; Clinthorne, N. H.; Cochran, E.; Grošičar, B.; Kagan, H.; Lacasta, C.; Linhart, V.; Mikuž, M.; Stankova, V.; Weilhammer, P.; Žontar, D.

2010-01-01

Simulation indicates that PET image could be improved by upgrading a conventional ring with a probe placed close to the imaged object. In this paper, timing issues related to a PET probe using high-resistivity silicon as a detector material are addressed. The final probe will consist of several (four to eight) 1-mm thick layers of silicon detectors, segmented into 1 × 1 mm2 pads, each pad equivalent to an independent p + nn+ diode. A proper matching of events in silicon with events of the external ring can be achieved with a good timing resolution. To estimate the timing performance, measurements were performed on a simplified model probe, consisting of a single 1-mm thick detector with 256 square pads (1.4 mm side), coupled with two VATAGP7s, application-specific integrated circuits. The detector material and electronics are the same that will be used for the final probe. The model was exposed to 511 keV annihilation photons from an 22Na source, and a scintillator (LYSO)–PMT assembly was used as a timing reference. Results were compared with the simulation, consisting of four parts: (i) GEANT4 implemented realistic tracking of electrons excited by annihilation photon interactions in silicon, (ii) calculation of propagation of secondary ionisation (electron–hole pairs) in the sensor, (iii) estimation of the shape of the current pulse induced on surface electrodes and (iv) simulation of the first electronics stage. A very good agreement between the simulation and the measurements were found. Both indicate reliable performance of the final probe at timing windows down to 20 ns. PMID:20215445

Timing performance of the silicon PET insert probe.

PubMed

Studen, A; Burdette, D; Chesi, E; Cindro, V; Clinthorne, N H; Cochran, E; Grosicar, B; Kagan, H; Lacasta, C; Linhart, V; Mikuz, M; Stankova, V; Weilhammer, P; Zontar, D

2010-01-01

Simulation indicates that PET image could be improved by upgrading a conventional ring with a probe placed close to the imaged object. In this paper, timing issues related to a PET probe using high-resistivity silicon as a detector material are addressed. The final probe will consist of several (four to eight) 1-mm thick layers of silicon detectors, segmented into 1 x 1 mm(2) pads, each pad equivalent to an independent p + nn+ diode. A proper matching of events in silicon with events of the external ring can be achieved with a good timing resolution. To estimate the timing performance, measurements were performed on a simplified model probe, consisting of a single 1-mm thick detector with 256 square pads (1.4 mm side), coupled with two VATAGP7s, application-specific integrated circuits. The detector material and electronics are the same that will be used for the final probe. The model was exposed to 511 keV annihilation photons from an (22)Na source, and a scintillator (LYSO)-PMT assembly was used as a timing reference. Results were compared with the simulation, consisting of four parts: (i) GEANT4 implemented realistic tracking of electrons excited by annihilation photon interactions in silicon, (ii) calculation of propagation of secondary ionisation (electron-hole pairs) in the sensor, (iii) estimation of the shape of the current pulse induced on surface electrodes and (iv) simulation of the first electronics stage. A very good agreement between the simulation and the measurements were found. Both indicate reliable performance of the final probe at timing windows down to 20 ns.

Digital pulse-shape analysis with a TRACE early silicon prototype

NASA Astrophysics Data System (ADS)

Mengoni, D.; Dueñas, J. A.; Assié, M.; Boiano, C.; John, P. R.; Aliaga, R. J.; Beaumel, D.; Capra, S.; Gadea, A.; Gonzáles, V.; Gottardo, A.; Grassi, L.; Herrero-Bosch, V.; Houdy, T.; Martel, I.; Parkar, V. V.; Perez-Vidal, R.; Pullia, A.; Sanchis, E.; Triossi, A.; Valiente Dobón, J. J.

2014-11-01

A highly segmented silicon-pad detector prototype has been tested to explore the performance of the digital pulse shape analysis in the discrimination of the particles reaching the silicon detector. For the first time a 200 μm thin silicon detector, grown using an ordinary floating zone technique, has been shown to exhibit a level discrimination thanks to the fine segmentation. Light-charged particles down to few MeV have been separated, including their punch-through. A coaxial HPGe detector in time coincidence has further confirmed the quality of the particle discrimination.

The bipolar silicon microstrip detector: A proposal for a novel precision tracking device

NASA Astrophysics Data System (ADS)

Horisberger, R.

1990-03-01

It is proposed to combine the technology of fully depleted silicon microstrip detectors fabricated on n doped high resistivity silicon with the concept of the bipolar transistor. This is done by adding a n ++ doped region inside the normal p + implanted region of the reverse biased p + n diode. Teh resulting structure has amplifying properties and is referred to as bipolar pixel transistor. The simplest readout scheme of a bipolar pixel array by an aluminium strip bus leads to the bipolar microstrip detector. The bipolar pixel structure is expected to give a better signal-to-noise performance for the detection of minimum ionizing charged particle tracks than the normal silicon diode strip detector and therefore should allow in future the fabrication of thinner silicon detectors for precision tracking.

Impact of long-pass interferential filters on dark current and background light rejection in Silicon Photomultipliers

NASA Astrophysics Data System (ADS)

Mazzillo, M.; Sciuto, A.; Libertino, S.; Lombardo, S.; Fallica, G.

2018-02-01

There is an increasing interest in using Silicon Photomultipliers (SiPMs) in emerging applications where the detectors have to operate in ambient environment with high sensitivity and fast timing response in combination with narrow bandwidth light emitting sources like LEDs or VCSELs. The need to use large area detectors for optimizing the light collection efficiency, due to the low optical fluxes to be usually detected, imposes the optimization of the SiPM performance in specific wavelength ranges (usually visible or near infrared), to fully exploit the single photon sensitivity of these detectors and not to reduce at the same time their dynamic range. The use of proper optical long-pass filters on the detector's package can represent a suitable way to reach both these targets, through the reduction of environmental light absorption. Here we present the preliminary results obtained from the characterization of n+-p SiPMs with commercial long-pass filters with increasing cut-on wavelength in the range 500 nm-900 nm glued on the top side of the detector's package. The performance of the detectors has been evaluated in terms of dark current variation induced by the use of the filters and background light rejection under the illumination of white fluorescent lamps. The relevant reduction observed in the dark current (up to 90% at 13 V overvoltage) and the consistent reduction of stray light absorption (up to 90% at 3 V overvoltage with a 900 nm cut-on wavelength long-pass filter) are the main characterization results obtained and shown in this paper.

X-ray tests of a microchannel plate detector and amorphous silicon pixel array readout for neutron radiography

NASA Astrophysics Data System (ADS)

Ambrosi, R. M.; Street, R.; Feller, B.; Fraser, G. W.; Watterson, J. I. W.; Lanza, R. C.; Dowson, J.; Ross, D.; Martindale, A.; Abbey, A. F.; Vernon, D.

2007-03-01

High-performance large area imaging detectors for fast neutrons in the 5-14 MeV energy range do not exist at present. The aim of this project is to combine microchannel plates or MCPs (or similar electron multiplication structures) traditionally used in image intensifiers and X-ray detectors with amorphous silicon (a-Si) pixel arrays to produce a composite converter and intensifier position sensitive imaging system. This detector will provide an order of magnitude improvement in image resolution when compared with current millimetre resolution limits obtained using phosphor or scintillator-based hydrogen rich converters. In this study we present the results of the initial experimental evaluation of the prototype system. This study was carried out using a medical X-ray source for the proof of concept tests, the next phase will involve neutron imaging tests. The hybrid detector described in this study is a unique development and paves the way for large area position sensitive detectors consisting of MCP or microsphere plate detectors and a-Si or polysilicon pixel arrays. Applications include neutron and X-ray imaging for terrestrial applications. The technology could be extended to space instrumentation for X-ray astronomy.

Determination of the active volumes of solid-state photon-beam dosimetry detectors using the PTB proton microbeam.

PubMed

Poppinga, Daniela; Delfs, Bjoern; Meyners, Jutta; Langner, Frank; Giesen, Ulrich; Harder, Dietrich; Poppe, Bjoern; Looe, Hui K

2018-05-04

This study aims at the experimental determination of the diameters and thicknesses of the active volumes of solid-state photon-beam detectors for clinical dosimetry. The 10 MeV proton microbeam of the PTB (Physikalisch-Technische Bundesanstalt, Braunschweig) was used to examine two synthetic diamond detectors, type microDiamond (PTW Freiburg, Germany), and the silicon detectors Diode E (PTW Freiburg, Germany) and Razor Diode (Iba Dosimetry, Germany). The knowledge of the dimensions of their active volumes is essential for their Monte Carlo simulation and their applications in small-field photon-beam dosimetry. The diameter of the active detector volume was determined from the detector current profile recorded by radially scanning the proton microbeam across the detector. The thickness of the active detector volume was determined from the detector's electrical current, the number of protons incident per time interval and their mean stopping power in the active volume. The mean energy of the protons entering this volume was assessed by comparing the measured and the simulated influence of the thickness of a stack of aluminum preabsorber foils on the detector signal. For all detector types investigated, the diameters measured for the active volume closely agreed with the manufacturers' data. For the silicon Diode E detector, the thickness determined for the active volume agreed with the manufacturer's data, while for the microDiamond detectors and the Razor Diode, the thicknesses measured slightly exceeded those stated by the manufacturers. The PTB microbeam facility was used to analyze the diameters and thicknesses of the active volumes of photon dosimetry detectors for the first time. A new method of determining the thickness values with an uncertainty of ±10% was applied. The results appear useful for further consolidating detailed geometrical knowledge of the solid-state detectors investigated, which are used in clinical small-field photon-beam dosimetry. © 2018 American Association of Physicists in Medicine.

Innovative thin silicon detectors for monitoring of therapeutic proton beams: preliminary beam tests

NASA Astrophysics Data System (ADS)

Vignati, A.; Monaco, V.; Attili, A.; Cartiglia, N.; Donetti, M.; Fadavi Mazinani, M.; Fausti, F.; Ferrero, M.; Giordanengo, S.; Hammad Ali, O.; Mandurrino, M.; Manganaro, L.; Mazza, G.; Sacchi, R.; Sola, V.; Staiano, A.; Cirio, R.; Boscardin, M.; Paternoster, G.; Ficorella, F.

2017-12-01

To fully exploit the physics potentials of particle therapy in delivering dose with high accuracy and selectivity, charged particle therapy needs further improvement. To this scope, a multidisciplinary project (MoVeIT) of the Italian National Institute for Nuclear Physics (INFN) aims at translating research in charged particle therapy into clinical outcome. New models in the treatment planning system are being developed and validated, using dedicated devices for beam characterization and monitoring in radiobiological and clinical irradiations. Innovative silicon detectors with internal gain layer (LGAD) represent a promising option, overcoming the limits of currently used ionization chambers. Two devices are being developed: one to directly count individual protons at high rates, exploiting the large signal-to-noise ratio and fast collection time in small thicknesses (1 ns in 50 μm) of LGADs, the second to measure the beam energy with time-of-flight techniques, using LGADs optimized for excellent time resolutions (Ultra Fast Silicon Detectors, UFSDs). The preliminary results of first beam tests with therapeutic beam will be presented and discussed.

Submersed sensing electrode used in fuel-cell type hydrogen detector

NASA Technical Reports Server (NTRS)

Niedrach, L. W.; Rudek, F. P.; Rutkoneski, M. D.

1971-01-01

Electrode has silicone rubber diffusion barrier with fixed permeation constant for hydrogen. Barrier controls flow of hydrogen to anode and Faraday relationship establishes upper limit for current through cell. Electrode fabrication is described.

Design of a Tunable, Room Temperature, Continuous-Wave Terahertz Source and Detector using Silicon Waveguides

DTIC Science & Technology

2008-01-30

that will use conventional diode- or hotomultiplier-tube-based optical detectors , which are xtremely sensitive . . HEATING AND FREE-CARRIER IMITATIONS...CONTRACT NUMBER IN-HOUSE Design of a tunable, room temperature, continuous-wave terahertz source and detector using silicon waveguides 5b. GRANT...B 261Design of a tunable, room temperature, continuous-wave terahertz source and detector using silicon waveguides T. Baehr-Jones,1,* M. Hochberg,1,3

Performance study of thin epitaxial silicon PIN detectors for thermal neutron measurements with reduced γ sensitivity

NASA Astrophysics Data System (ADS)

Singh, Arvind; Desai, Shraddha; Kumar, Arvind; Topkar, Anita

2018-05-01

A novel approach of using thin epitaxial silicon PIN detectors for thermal neutron measurements with reduced γ sensitivity has been presented. Monte Carlo simulations showed that there is a significant reduction in the gamma sensitivity for thin detectors with the thickness of 10- 25 μm compared to a detector of thickness of 300 μm. Epitaxial PIN silicon detectors with the thickness of 10 μm, 15 μm and 25 μm were fabricated using a custom process. The detectors exhibited low leakage currents of a few nano-amperes. The gamma sensitivity of the detectors was experimentally studied using a 33 μCi, 662 keV, 137Cs source. Considering the count rates, compared to a 300 μm thick detector, the gamma sensitivity of the 10 μm, 15 μm and 25 μm thick detectors was reduced by factors of 1874, 187 and 18 respectively. The detector performance for thermal neutrons was subsequently investigated with a thermal neutron beam using an enriched 10B film as a neutron converter layer. The thermal neutron spectra for all three detectors exhibited three distinct regions corresponding to the 4He and 7Li charge products released in the 10B-n reaction. With a 10B converter, the count rates were 1466 cps, 3170 cps and 2980 cps for the detectors of thicknesses of 10 μm, 25 μm and 300 μm respectively. The thermal neutron response of thin detectors with 10 μm and 25 μm thickness showed significant reduction in the gamma sensitivity compared to that observed for the 300 μm thick detector. Considering the total count rate obtained for thermal neutrons with a 10B converter film, the count rate without the converter layer were about 4%, 7% and 36% for detectors with thicknesses of 10 μm, 25 μm and 300 μm respectively. The detector with 10 μm thickness showed negligible gamma sensitivity of 4 cps, but higher electronic noise and reduced pulse heights. The detector with 25 μm thickness demonstrated the best performance with respect to electronic noise, thermal neutron response and gamma sensitivity.

Fabrication of an X-Ray Imaging Detector

NASA Technical Reports Server (NTRS)

Alcorn, G. E.; Burgess, A. S.

1986-01-01

X-ray detector array yields mosaic image of object emitting 1- to 30-keV range fabricated from n-doped silicon wafer. In proposed fabrication technique, thin walls of diffused n+ dopant divide wafer into pixels of rectangular cross section, each containing central electrode of thermally migrated p-type metal. This pnn+ arrangement reduces leakage current by preventing transistor action caused by pnp structure of earlier version.

Enabling Large Focal Plane Arrays through Mosaic Hybridization

NASA Technical Reports Server (NTRS)

Miller, Timothy M.; Jhabvala, Christine A.; Costen, Nick; Benford, Dominic J.

2012-01-01

We have demonstrated the hybridization of large mosaics of far-infrared detectors, joining separately fabricated sub-units into a single unit on a single, large substrate. We produced a single detector mockup on a 100mm diameter wafer and four mockup readout quadrant chips from a separate 100mm wafer. The individually fabricated parts were hybridized using a Suss FC150 flip chip bonder to assemble the detector-readout stack. Once all of the hybridized readouts were in place, a single, large and thick silicon substrate was placed on the stack and attached with permanent epoxy to provide strength and a Coefficient of Thermal Expansion (CTE) match to the silicon components underneath. Wirebond pads on the readout chips connect circuits to warm readout electronics; and were used to validate the successful superconducting electrical interconnection of the mockup mosaic-hybridized detector. This demonstration is directly scalable to 150 mm diameter wafers, enabling pixel areas over ten times the area currently demonstrated.

Silicon photodiode as a detector in the rocket-borne photometry of the near infrared airglow.

PubMed

Schaeffer, R C

1976-11-01

The application of a silicon P-I-N photodiode to the dc measurement of low levels of near ir radiation is described. It is shown that the threshold of signal detection is set by the current amplifier voltage noise, the effect of which at the output is determined by the value of source resistance of the photodiode. The photodiode was used as the detector in a compact interference filter photometer designed for rocket-borne studies of the airglow. Flight results have proved the instrument's capability to provide measurements sufficiently precise to yield an accurate height profile of the (0-0) atmospheric band of O(2) night airglow at lambda762 nm.

Short wavelength HgCdTe staring focal plane for low background astronomy applications

NASA Technical Reports Server (NTRS)

Hall, D.; Stobie, J.; Hartle, N.; Lacroix, D.; Maschhoff, K.

1989-01-01

The design of a 128x128 staring short wave infrared (SWIR) HgCdTe focal plane incorporating charge integrating transimpedance input preamplifiers is presented. The preamplifiers improve device linearity and uniformity, and provide signal gain ahead of the miltiplexer and readout circuitry. Detector's with cutoff wavelength of 2.5 microns and operated at 80 K have demonstrated impedances in excess of 10(exp 16) ohms with 60 percent quantum efficiency. Focal plane performance using a smaller format device is presented which demonstrates the potential of this approach. Although the design is capable of achieving less than 30 rms electrons with todays technology, initial small format devices demonstrated a read noise of 100 rms electrons and were limited by the atypical high noise performance of the silicon process run. Luminescence from the active silicon circuitry in the multiplexer limits the minimum detector current to a few hundred electrons per second. Approaches to eliminate this excessive source of current is presented which should allow the focal plane to achieve detector background limited performance.

Silicon Detector System for High Rate EXAFS Applications.

PubMed

Pullia, A; Kraner, H W; Siddons, D P; Furenlid, L R; Bertuccio, G

1995-08-01

A multichannel silicon pad detector for EXAFS (Extended X-ray Absorption Fine Structure) applications has been designed and built. The X-ray spectroscopic measurements demonstrate that an adequate energy resolution of 230 eV FWHM (corresponding to 27 rms electrons in silicon) can be achieved reliably at -35 °C. A resolution of 190 eV FWHM (corresponding to 22 rms electrons) has been obtained from individual pads at -35 °C. At room temperature (25 °C) an average energy resolution of 380 eV FWHM is achieved and a resolution of 350 eV FWHM (41 rms electrons) is the best performance. A simple cooling system constituted of Peltier cells is sufficient to reduce the reverse currents of the pads and their related shot noise contribution, in order to achieve resolutions better than 300 eV FWHM which is adequate for the EXAFS applications.

Silicon Detector System for High Rate EXAFS Applications

PubMed Central

Pullia, A.; Kraner, H. W.; Siddons, D. P.; Furenlid, L. R.; Bertuccio, G.

2015-01-01

A multichannel silicon pad detector for EXAFS (Extended X-ray Absorption Fine Structure) applications has been designed and built. The X-ray spectroscopic measurements demonstrate that an adequate energy resolution of 230 eV FWHM (corresponding to 27 rms electrons in silicon) can be achieved reliably at −35 °C. A resolution of 190 eV FWHM (corresponding to 22 rms electrons) has been obtained from individual pads at −35 °C. At room temperature (25 °C) an average energy resolution of 380 eV FWHM is achieved and a resolution of 350 eV FWHM (41 rms electrons) is the best performance. A simple cooling system constituted of Peltier cells is sufficient to reduce the reverse currents of the pads and their related shot noise contribution, in order to achieve resolutions better than 300 eV FWHM which is adequate for the EXAFS applications. PMID:26538683

Can direct electron detectors outperform phosphor-CCD systems for TEM?

NASA Astrophysics Data System (ADS)

Moldovan, G.; Li, X.; Kirkland, A.

2008-08-01

A new generation of imaging detectors is being considered for application in TEM, but which device architectures can provide the best images? Monte Carlo simulations of the electron-sensor interaction are used here to calculate the expected modulation transfer of monolithic active pixel sensors (MAPS), hybrid active pixel sensors (HAPS) and double sided Silicon strip detectors (DSSD), showing that ideal and nearly ideal transfer can be obtained using DSSD and MAPS sensors. These results highly recommend the replacement of current phosphor screen and charge coupled device imaging systems with such new directly exposed position sensitive electron detectors.

Experimental studies with two novel silicon detectors for the development of time-of-flight spectrometry of laser-accelerated proton beams

NASA Astrophysics Data System (ADS)

Würl, M.; Reinhardt, S.; Rosenfeld, A.; Petasecca, M.; Lerch, M.; Tran, L.; Karsch, S.; Assmann, W.; Schreiber, J.; Parodi, K.

2017-01-01

Laser-accelerated proton beams exhibit remarkably different beam characteristics as compared to conventionally accelerated ion beams. About 105 to 107 particles per MeV and msr are accelerated quasi-instantaneously within about 1 ps. The resulting energy spectrum typically shows an exponentially decaying distribution. Our planned approach to determine the energy spectrum of the particles generated in each pulse is to exploit the time-of-flight (TOF) difference of protons with different kinetic energies at 1 m distance from the laser-target interaction. This requires fast and sensitive detectors. We therefore tested two prototype silicon detectors, developed at the Centre for Medical Radiation Physics at the University of Wollongong with a current amplifier, regarding their suitability for TOF-spectrometry in terms of sensitivity and timing properties. For the latter, we illuminated the detectors with short laser pulses, measured the signal current and compared it to the signal of a fast photodiode. The comparison revealed that the timing properties of both prototypes are not yet sufficient for our purpose. In contrast, our results regarding the detectors’ sensitivity are promising. The lowest detectable proton flux at 10 MeV was found to be 25 protons per ns on the detector. With this sensitivity and with a smaller pixelation of the detectors, the timing properties can be improved for new prototypes, making them potential candidates for TOF-spectrometry of laser-accelerated particle beams.

Novel mid-infrared silicon/germanium detector concepts

NASA Astrophysics Data System (ADS)

Presting, Hartmut; Konle, Johannes; Hepp, Markus; Kibbel, Horst; Thonke, Klaus; Sauer, Rolf; Corbin, Elizabeth A.; Jaros, Milan

2000-10-01

Highly p-doped silicon/silicon-germanium (Si/SiGe) quantum well (QW) structures are grown by molecular beam epitaxy on double-sided polished (100)Si substrates for mid-IR (3 to 5 micrometers and 8 to 12 micrometers ) detection. The samples are characterized by secondary ion mass spectroscopy, x-ray diffraction, and absorption measurements. Single mesa detectors are fabricated as well as large-area focal plane arrays with 256 X 256 pixels using standard Si integrated processing techniques. The detectors, based on heterointernal photo-emission (HIP) of photogenerated holes from a heavily p-doped (p++ approximately 5 X 1020 cm-3) SiGe QW into an undoped silicon layer, operate at 77 K. Various novel designs of the SiGe HIP's such as Ge- and B-grading, double- and multi-wells, are realized; in addition, thin doping setback layers between the highly doped well and the undoped Si layer are introduced. The temperature dependence of dark currents and photocurrents are measured up to 225 K. In general, we observe broad photoresponse curves with peak external quantum efficiencies, up to (eta) ext approximately 0.5% at 77 K and 4(mu) , detectivities up to 8 X 1011 cm(root)Hz/W are obtained. We demonstrate that by varying the thickness, Ge content, and doping level of the single- and the multi-QWs of SiGe HIP detectors, the photoresponse peak and the cutoff of the spectrum can be tuned over a wide wavelength range. The epitaxial versatility of the Si/SiGe system enables a tailoring of the photoresponse spectrum which demonstrates the advantages of the SiGe system in comparison over commercially used silicide detectors.

Belle II silicon vertex detector

NASA Astrophysics Data System (ADS)

Adamczyk, K.; Aihara, H.; Angelini, C.; Aziz, T.; Babu, V.; Bacher, S.; Bahinipati, S.; Barberio, E.; Baroncelli, Ti.; Baroncelli, To.; Basith, A. K.; Batignani, G.; Bauer, A.; Behera, P. K.; Bergauer, T.; Bettarini, S.; Bhuyan, B.; Bilka, T.; Bosi, F.; Bosisio, L.; Bozek, A.; Buchsteiner, F.; Casarosa, G.; Ceccanti, M.; Červenkov, D.; Chendvankar, S. R.; Dash, N.; Divekar, S. T.; Doležal, Z.; Dutta, D.; Enami, K.; Forti, F.; Friedl, M.; Hara, K.; Higuchi, T.; Horiguchi, T.; Irmler, C.; Ishikawa, A.; Jeon, H. B.; Joo, C. W.; Kandra, J.; Kang, K. H.; Kato, E.; Kawasaki, T.; Kodyš, P.; Kohriki, T.; Koike, S.; Kolwalkar, M. M.; Kvasnička, P.; Lanceri, L.; Lettenbicher, J.; Maki, M.; Mammini, P.; Mayekar, S. N.; Mohanty, G. B.; Mohanty, S.; Morii, T.; Nakamura, K. R.; Natkaniec, Z.; Negishi, K.; Nisar, N. K.; Onuki, Y.; Ostrowicz, W.; Paladino, A.; Paoloni, E.; Park, H.; Pilo, F.; Profeti, A.; Rashevskaya, I.; Rao, K. K.; Rizzo, G.; Rozanska, M.; Sandilya, S.; Sasaki, J.; Sato, N.; Schultschik, S.; Schwanda, C.; Seino, Y.; Shimizu, N.; Stypula, J.; Suzuki, J.; Tanaka, S.; Tanida, K.; Taylor, G. N.; Thalmeier, R.; Thomas, R.; Tsuboyama, T.; Uozumi, S.; Urquijo, P.; Vitale, L.; Volpi, M.; Watanuki, S.; Watson, I. J.; Webb, J.; Wiechczynski, J.; Williams, S.; Würkner, B.; Yamamoto, H.; Yin, H.; Yoshinobu, T.; Belle II SVD Collaboration

2016-09-01

The Belle II experiment at the SuperKEKB collider in Japan is designed to indirectly probe new physics using approximately 50 times the data recorded by its predecessor. An accurate determination of the decay-point position of subatomic particles such as beauty and charm hadrons as well as a precise measurement of low-momentum charged particles will play a key role in this pursuit. These will be accomplished by an inner tracking device comprising two layers of pixelated silicon detector and four layers of silicon vertex detector based on double-sided microstrip sensors. We describe herein the design, prototyping and construction efforts of the Belle-II silicon vertex detector.

Performance of the PHOBOS silicon sensors

NASA Astrophysics Data System (ADS)

Decowski, M. P.; Back, B. B.; Baker, M. D.; Barton, D. S.; Betts, R. R.; Bindel, R.; Budzanowski, A.; Busza, W.; Carroll, A.; Garcia, E.; George, N.; Gulbrandsen, K.; Gushue, S.; Halliwell, C.; Hamblen, J.; Heintzelman, G. A.; Henderson, C.; Hołyński, R.; Hofman, D. J.; Holzman, B.; Johnson, E.; Kane, J. L.; Katzy, J.; Khan, N.; Kucewicz, W.; Kulinich, P.; Lin, W. T.; Manly, S.; McLeod, D.; Michałowski, J.; Mignerey, A. C.; Mülmenstädt, J.; Nouicer, R.; Olszewski, A.; Pak, R.; Park, I. C.; Pernegger, H.; Reed, C.; Remsberg, L. P.; Reuter, M.; Roland, C.; Roland, G.; Rosenberg, L.; Sarin, P.; Sawicki, P.; Skulski, W.; Steadman, S. G.; Stephans, G. S. F.; Steinberg, P.; Stodulski, M.; Sukhanov, A.; Tang, J.-L.; Teng, R.; Trzupek, A.; Vale, C.; van Nieuwenhuizen, G. J.; Verdier, R.; Wadsworth, B.; Wolfs, F. L. H.; Wosiek, B.; Woźniak, K.; Wuosmaa, A. H.; Wysłouch, B.

2002-02-01

The PHOBOS detector is designed to study the physics of Au+Au collisions at the Relativistic Heavy Ion Collider. The detector is almost entirely made of silicon pad detectors and was fully operational during the first year of operation. The detector is described, and key performance characteristics are summarized.

Technology of silicon charged-particle detectors developed at the Institute of Electron Technology (ITE)

NASA Astrophysics Data System (ADS)

Wegrzecka, Iwona; Panas, Andrzej; Bar, Jan; Budzyński, Tadeusz; Grabiec, Piotr; Kozłowski, Roman; Sarnecki, Jerzy; Słysz, Wojciech; Szmigiel, Dariusz; Wegrzecki, Maciej; Zaborowski, Michał

2013-07-01

The paper discusses the technology of silicon charged-particle detectors developed at the Institute of Electron Technology (ITE). The developed technology enables the fabrication of both planar and epiplanar p+-ν-n+ detector structures with an active area of up to 50 cm2. The starting material for epiplanar structures are silicon wafers with a high-resistivity n-type epitaxial layer ( ν layer - ρ < 3 kΩcm) deposited on a highly doped n+-type substrate (ρ< 0,02Ωcm) developed and fabricated at the Institute of Electronic Materials Technology. Active layer thickness of the epiplanar detectors (νlayer) may range from 10 μm to 150 μm. Imported silicon with min. 5 kΩcm resistivity is used to fabricate planar detectors. Active layer thickness of the planar detectors (ν) layer) may range from 200 μm to 1 mm. This technology enables the fabrication of both discrete and multi-junction detectors (monolithic detector arrays), such as single-sided strip detectors (epiplanar and planar) and double-sided strip detectors (planar). Examples of process diagrams for fabrication of the epiplanar and planar detectors are presented in the paper, and selected technological processes are discussed.

Demonstration of high-responsivity epitaxial β-Ga2O3/GaN metal–heterojunction-metal broadband UV-A/UV-C detector

NASA Astrophysics Data System (ADS)

Kalra, Anisha; Vura, Sandeep; Rathkanthiwar, Shashwat; Muralidharan, Rangarajan; Raghavan, Srinivasan; Nath, Digbijoy N.

2018-06-01

We demonstrate epitaxial β-Ga2O3/GaN-based vertical metal–heterojunction-metal (MHM) broadband UV-A/UV-C photodetectors with high responsivity (3.7 A/W) at 256 and 365 nm, UV-to-visible rejection >103, and a photo-to-dark current ratio of ∼100. A small (large) conduction (valence) band offset at the heterojunction of pulsed laser deposition (PLD)-grown β-Ga2O3 on metal organic chemical vapor deposition (MOCVD)-grown GaN-on-silicon with epitaxial registry, as confirmed by X-ray diffraction (XRD) azimuthal scanning, is exploited to realize detectors with an asymmetric photoresponse and is explained with one-dimensional (1D) band diagram simulations. The demonstrated novel vertical MHM detectors on silicon are fully scalable and promising for enabling focal plane arrays for broadband ultraviolet sensing.

DSSD detectors development PACT, a new space Compton telescope at the horizon 2025

NASA Astrophysics Data System (ADS)

Laurent, P.; Khalil, M.; Dolgorouki, Y.; Bertoli, W.; Oger, R.; Bréelle, E.

2015-07-01

PACT is a Pair and Compton telescope that aims to make a sensitive survey of the gamma-ray sky between 100 keV and 100 MeV . It will be devoted to the detection of radioactivity lines from present and past supernova explosions, the observation of thousands of new blazars, and the study of polarized radiations from gamma-ray bursts, pulsars and accreting black holes. It will reach a sensitivity of one to two orders of magnitude lower than COMPTEL/CGRO (e.g. about 50 times lower for the broad-band, survey sensitivity at 1 MeV after 5 years). The PACT telescope is based upon three main components: a silicon-based gamma-ray tracker, a crystal-based calorimeter (e.g. CeBr3), and an anticoincidence detector made of plastic scintillator panels. Prototypes of the Silicon detector planes have been optimized and are currently tested in the APC laboratory.

Naturally occurring 32Si and low-background silicon dark matter detectors

DOE PAGES

Orrell, John L.; Arnquist, Isaac J.; Bliss, Mary; ...

2018-02-10

Here, the naturally occurring radioisotope 32Si represents a potentially limiting background in future dark matter direct-detection experiments. We investigate sources of 32Si and the vectors by which it comes to reside in silicon crystals used for fabrication of radiation detectors. We infer that the 32Si concentration in commercial single-crystal silicon is likely variable, dependent upon the specific geologic and hydrologic history of the source (or sources) of silicon “ore” and the details of the silicon-refinement process. The silicon production industry is large, highly segmented by refining step, and multifaceted in terms of final product type, from which we conclude thatmore » production of 32Si-mitigated crystals requires both targeted silicon material selection and a dedicated refinement-through-crystal-production process. We review options for source material selection, including quartz from an underground source and silicon isotopically reduced in 32Si. To quantitatively evaluate the 32Si content in silicon metal and precursor materials, we propose analytic methods employing chemical processing and radiometric measurements. Ultimately, it appears feasible to produce silicon detectors with low levels of 32Si, though significant assay method development is required to validate this claim and thereby enable a quality assurance program during an actual controlled silicon-detector production cycle.« less

Naturally occurring 32Si and low-background silicon dark matter detectors

NASA Astrophysics Data System (ADS)

Orrell, John L.; Arnquist, Isaac J.; Bliss, Mary; Bunker, Raymond; Finch, Zachary S.

2018-05-01

The naturally occurring radioisotope 32Si represents a potentially limiting background in future dark matter direct-detection experiments. We investigate sources of 32Si and the vectors by which it comes to reside in silicon crystals used for fabrication of radiation detectors. We infer that the 32Si concentration in commercial single-crystal silicon is likely variable, dependent upon the specific geologic and hydrologic history of the source (or sources) of silicon "ore" and the details of the silicon-refinement process. The silicon production industry is large, highly segmented by refining step, and multifaceted in terms of final product type, from which we conclude that production of 32Si-mitigated crystals requires both targeted silicon material selection and a dedicated refinement-through-crystal-production process. We review options for source material selection, including quartz from an underground source and silicon isotopically reduced in 32Si. To quantitatively evaluate the 32Si content in silicon metal and precursor materials, we propose analytic methods employing chemical processing and radiometric measurements. Ultimately, it appears feasible to produce silicon detectors with low levels of 32Si, though significant assay method development is required to validate this claim and thereby enable a quality assurance program during an actual controlled silicon-detector production cycle.

Naturally occurring 32Si and low-background silicon dark matter detectors

DOE Office of Scientific and Technical Information (OSTI.GOV)

Orrell, John L.; Arnquist, Isaac J.; Bliss, Mary

Here, the naturally occurring radioisotope 32Si represents a potentially limiting background in future dark matter direct-detection experiments. We investigate sources of 32Si and the vectors by which it comes to reside in silicon crystals used for fabrication of radiation detectors. We infer that the 32Si concentration in commercial single-crystal silicon is likely variable, dependent upon the specific geologic and hydrologic history of the source (or sources) of silicon “ore” and the details of the silicon-refinement process. The silicon production industry is large, highly segmented by refining step, and multifaceted in terms of final product type, from which we conclude thatmore » production of 32Si-mitigated crystals requires both targeted silicon material selection and a dedicated refinement-through-crystal-production process. We review options for source material selection, including quartz from an underground source and silicon isotopically reduced in 32Si. To quantitatively evaluate the 32Si content in silicon metal and precursor materials, we propose analytic methods employing chemical processing and radiometric measurements. Ultimately, it appears feasible to produce silicon detectors with low levels of 32Si, though significant assay method development is required to validate this claim and thereby enable a quality assurance program during an actual controlled silicon-detector production cycle.« less

Naturally occurring 32 Si and low-background silicon dark matter detectors

DOE Office of Scientific and Technical Information (OSTI.GOV)

Orrell, John L.; Arnquist, Isaac J.; Bliss, Mary

The naturally occurring radioisotope Si-32 represents a potentially limiting background in future dark matter direct-detection experiments. We investigate sources of Si-32 and the vectors by which it comes to reside in silicon crystals used for fabrication of radiation detectors. We infer that the Si-32 concentration in commercial single-crystal silicon is likely variable, dependent upon the specific geologic and hydrologic history of the source (or sources) of silicon “ore” and the details of the silicon-refinement process. The silicon production industry is large, highly segmented by refining step, and multifaceted in terms of final product type, from which we conclude that productionmore » of Si-32-mitigated crystals requires both targeted silicon material selection and a dedicated refinement-through-crystal-production process. We review options for source material selection, including quartz from an underground source and silicon isotopically reduced in Si-32. To quantitatively evaluate the Si-32 content in silicon metal and precursor materials, we propose analytic methods employing chemical processing and radiometric measurements. Ultimately, it appears feasible to produce silicon-based detectors with low levels of Si-32, though significant assay method development is required to validate this claim and thereby enable a quality assurance program during an actual controlled silicon-detector production cycle.« less

A Silicon Nanomembrane Detector for Matrix-Assisted Laser Desorption/Ionization Time-of-Flight Mass Spectrometry (MALDI-TOF MS) of Large Proteins

PubMed Central

Park, Jonghoo; Blick, Robert H.

2013-01-01

We describe a MALDI-TOF ion detector based on freestanding silicon nanomembrane technology. The detector is tested in a commercial MALDI-TOF mass spectrometer with equimolar mixtures of proteins. The operating principle of the nanomembrane detector is based on phonon-assisted field emission from these silicon nanomembranes, in which impinging ion packets excite electrons in the nanomembrane to higher energy states. Thereby the electrons can overcome the vacuum barrier and escape from the surface of the nanomembrane via field emission. Ion detection is demonstrated of apomyoglobin (16,952 Da), aldolase (39,212 Da), bovine serum albumin (66,430 Da), and their equimolar mixtures. In addition to the three intact ions, a large number of fragment ions are also revealed by the silicon nanomembrane detector, which are not observable with conventional detectors. PMID:24152929

A silicon nanomembrane detector for matrix-assisted laser desorption/ionization time-of-flight mass spectrometry (MALDI-TOF MS) of large proteins.

PubMed

Park, Jonghoo; Blick, Robert H

2013-10-11

We describe a MALDI-TOF ion detector based on freestanding silicon nanomembrane technology. The detector is tested in a commercial MALDI-TOF mass spectrometer with equimolar mixtures of proteins. The operating principle of the nanomembrane detector is based on phonon-assisted field emission from these silicon nanomembranes, in which impinging ion packets excite electrons in the nanomembrane to higher energy states. Thereby the electrons can overcome the vacuum barrier and escape from the surface of the nanomembrane via field emission. Ion detection is demonstrated of apomyoglobin (16,952 Da), aldolase (39,212 Da), bovine serum albumin (66,430 Da), and their equimolar mixtures. In addition to the three intact ions, a large number of fragment ions are also revealed by the silicon nanomembrane detector, which are not observable with conventional detectors.

Study of gain homogeneity and radiation effects of Low Gain Avalanche Pad Detectors

NASA Astrophysics Data System (ADS)

Gallrapp, C.; Fernández García, M.; Hidalgo, S.; Mateu, I.; Moll, M.; Otero Ugobono, S.; Pellegrini, G.

2017-12-01

Silicon detectors with intrinsic charge amplification implementing a n++-p+-p structure are considered as a sensor technology for future tracking and timing applications in high energy physics experiments. The performance of the intrinsic gain in Low Gain Avalanche Detectors (LGAD) after irradiation is crucial for the characterization of radiation hardness and timing properties in this technology. LGAD devices irradiated with reactor neutrons or 800 MeV protons reaching fluences of 2.3 × 1016 neq/cm2 were characterized using Transient Current Technique (TCT) measurements with red and infra-red laser pulses. Leakage current variations observed in different production lots and within wafers were investigated using Thermally Stimulated Current (TSC). Results showed that the intrinsic charge amplification is reduced with increasing fluence up to 1015 neq/cm2 which is related to an effective acceptor removal. Further relevant issues were charge collection homogeneity across the detector surface and leakage current performance before and after irradiation.

Predictable quantum efficient detector based on n-type silicon photodiodes

NASA Astrophysics Data System (ADS)

Dönsberg, Timo; Manoocheri, Farshid; Sildoja, Meelis; Juntunen, Mikko; Savin, Hele; Tuovinen, Esa; Ronkainen, Hannu; Prunnila, Mika; Merimaa, Mikko; Tang, Chi Kwong; Gran, Jarle; Müller, Ingmar; Werner, Lutz; Rougié, Bernard; Pons, Alicia; Smîd, Marek; Gál, Péter; Lolli, Lapo; Brida, Giorgio; Rastello, Maria Luisa; Ikonen, Erkki

2017-12-01

The predictable quantum efficient detector (PQED) consists of two custom-made induced junction photodiodes that are mounted in a wedged trap configuration for the reduction of reflectance losses. Until now, all manufactured PQED photodiodes have been based on a structure where a SiO2 layer is thermally grown on top of p-type silicon substrate. In this paper, we present the design, manufacturing, modelling and characterization of a new type of PQED, where the photodiodes have an Al2O3 layer on top of n-type silicon substrate. Atomic layer deposition is used to deposit the layer to the desired thickness. Two sets of photodiodes with varying oxide thicknesses and substrate doping concentrations were fabricated. In order to predict recombination losses of charge carriers, a 3D model of the photodiode was built into Cogenda Genius semiconductor simulation software. It is important to note that a novel experimental method was developed to obtain values for the 3D model parameters. This makes the prediction of the PQED responsivity a completely autonomous process. Detectors were characterized for temperature dependence of dark current, spatial uniformity of responsivity, reflectance, linearity and absolute responsivity at the wavelengths of 488 nm and 532 nm. For both sets of photodiodes, the modelled and measured responsivities were generally in agreement within the measurement and modelling uncertainties of around 100 parts per million (ppm). There is, however, an indication that the modelled internal quantum deficiency may be underestimated by a similar amount. Moreover, the responsivities of the detectors were spatially uniform within 30 ppm peak-to-peak variation. The results obtained in this research indicate that the n-type induced junction photodiode is a very promising alternative to the existing p-type detectors, and thus give additional credibility to the concept of modelled quantum detector serving as a primary standard. Furthermore, the manufacturing of PQEDs is no longer dependent on the availability of a certain type of very lightly doped p-type silicon wafers.

Measurement of the Current Related Damage Rate at {-}50(°) C and Consequences on Macropixel Detector Operation in Space Experiments

NASA Astrophysics Data System (ADS)

Segneri, Gabriele; Brown, Craig; Carpenter, James-D.; Kuhnle, Bernd; Lauf, Thomas; Lechner, Peter; Lutz, Gerhard; Rummel, Stefan; Struder, Lothar; Treis, Johannes; Whitford, Chris

2009-12-01

A diode irradiation with 10-MeV protons was performed to measure the silicon current related damage rate at a temperature of -50°C. This measurement was fundamental to predict the performance of the detectors which will be used in the X-ray spectrometers of the Simbol-X and BepiColombo space missions. These detectors consist of arrays of large area silicon drift chambers with integrated depleted p-channel field effect transistors. The leakage current increase due to radiation damage and its consequent energy resolution degradation can be critical for these missions, specially for BepiColombo. These effects cannot be predicted because, during the whole missions, the sensors will be kept at temperatures below -40°C, and the existing models are based on measurements on structures which underwent annealing at higher temperatures. An irradiation experiment was performed to measure the current related damage rate at - 50°C, and the obtained value was (11.1 ± 0.2) X 10-17 A/cm. This result implies that it will be possible to achieve the Simbol-X energy resolution, whereas some annealing strategies will be needed for the BepiColombo mission. The annealing behaviour at 60°C was studied as well and the results are in agreement with the already available measurements.

Lead salt room-temperature MWIR FPA

NASA Astrophysics Data System (ADS)

Murphy, Paul F.; Jost, Steven R.; Barrett, John L.; Reese, Dan; Winn, Michael L.

2001-10-01

The development of low-cost uncooled thermal LWIR FPAs is resulting in the emergence of a new generation of infrared sensors for applications where affordability is the prerequisite for volume production. Both ferroelectric detector arrays and silicon-based microbolometers are finding numerous applications from gun sights to automotive FLIRs. There would be significant interest in a similar uncooled offering in the MWIR, but to date, thermal detectors have lacked sufficient sensitivity. The existing uncooled MWIR photon detector technology, based on polycrystalline lead salts, has been relegated to single-element detectors and relatively small linear arrays due to the high dark current and the stigma of being a 50-year-old technology.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Martinez-Ballarin, Roberto

The aim of this document is to study the effect of radiation damage on the silicon sensors. The reflection of the effect of radiation can be observed in two fundamental parameters of the detector: the bias current and the bias voltage. The leakage current directly affects the noise, while the bias voltage is required to collect the maximum signal deposited by the charged particle.

Muon counting using silicon photomultipliers in the AMIGA detector of the Pierre Auger observatory

NASA Astrophysics Data System (ADS)

Aab, A.; Abreu, P.; Aglietta, M.; Ahn, E. J.; Samarai, I. Al; Albuquerque, I. F. M.; Allekotte, I.; Allison, P.; Almela, A.; Alvarez Castillo, J.; Alvarez-Muñiz, J.; Ambrosio, M.; Anastasi, G. A.; Anchordoqui, L.; Andrada, B.; Andringa, S.; Aramo, C.; Arqueros, F.; Arsene, N.; Asorey, H.; Assis, P.; Aublin, J.; Avila, G.; Badescu, A. M.; Balaceanu, A.; Baus, C.; Beatty, J. J.; Becker, K. H.; Bellido, J. A.; Berat, C.; Bertaina, M. E.; Bertou, X.; Biermann, P. L.; Billoir, P.; Biteau, J.; Blaess, S. G.; Blanco, A.; Blazek, J.; Bleve, C.; Boháčová, M.; Boncioli, D.; Bonifazi, C.; Borodai, N.; Botti, A. M.; Brack, J.; Brancus, I.; Bretz, T.; Bridgeman, A.; Briechle, F. L.; Buchholz, P.; Bueno, A.; Buitink, S.; Buscemi, M.; Caballero-Mora, K. S.; Caccianiga, B.; Caccianiga, L.; Cancio, A.; Canfora, F.; Caramete, L.; Caruso, R.; Castellina, A.; Cataldi, G.; Cazon, L.; Cester, R.; Chavez, A. G.; Chiavassa, A.; Chinellato, J. A.; Chudoba, J.; Clay, R. W.; Colalillo, R.; Coleman, A.; Collica, L.; Coluccia, M. R.; Conceição, R.; Contreras, F.; Cooper, M. J.; Coutu, S.; Covault, C. E.; Cronin, J.; Dallier, R.; D'Amico, S.; Daniel, B.; Dasso, S.; Daumiller, K.; Dawson, B. R.; de Almeida, R. M.; de Jong, S. J.; De Mauro, G.; de Mello Neto, J. R. T.; De Mitri, I.; de Oliveira, J.; de Souza, V.; Debatin, J.; del Peral, L.; Deligny, O.; Di Giulio, C.; Di Matteo, A.; Díaz Castro, M. L.; Diogo, F.; Dobrigkeit, C.; D'Olivo, J. C.; Dorofeev, A.; dos Anjos, R. C.; Dova, M. T.; Dundovic, A.; Ebr, J.; Engel, R.; Erdmann, M.; Erfani, M.; Escobar, C. O.; Espadanal, J.; Etchegoyen, A.; Falcke, H.; Fang, K.; Farrar, G.; Fauth, A. C.; Fazzini, N.; Fick, B.; Figueira, J. M.; Filevich, A.; Filipčič, A.; Fratu, O.; Freire, M. M.; Fujii, T.; Fuster, A.; García, B.; Garcia-Pinto, D.; Gaté, F.; Gemmeke, H.; Gherghel-Lascu, A.; Ghia, P. L.; Giaccari, U.; Giammarchi, M.; Giller, M.; Głas, D.; Glaser, C.; Glass, H.; Golup, G.; Gómez Berisso, M.; Gómez Vitale, P. F.; González, N.; Gookin, B.; Gordon, J.; Gorgi, A.; Gorham, P.; Gouffon, P.; Grillo, A. F.; Grubb, T. D.; Guarino, F.; Guedes, G. P.; Hampel, M. R.; Hansen, P.; Harari, D.; Harrison, T. A.; Harton, J. L.; Hasankiadeh, Q.; Haungs, A.; Hebbeker, T.; Heck, D.; Heimann, P.; Herve, A. E.; Hill, G. C.; Hojvat, C.; Holt, E.; Homola, P.; Hörandel, J. R.; Horvath, P.; Hrabovský, M.; Huege, T.; Hulsman, J.; Insolia, A.; Isar, P. G.; Jandt, I.; Jansen, S.; Johnsen, J. A.; Josebachuili, M.; Kääpä, A.; Kambeitz, O.; Kampert, K. H.; Kasper, P.; Katkov, I.; Keilhauer, B.; Kemp, E.; Kieckhafer, R. M.; Klages, H. O.; Kleifges, M.; Kleinfeller, J.; Krause, R.; Krohm, N.; Kuempel, D.; Kukec Mezek, G.; Kunka, N.; Kuotb Awad, A.; LaHurd, D.; Latronico, L.; Lauscher, M.; Lebrun, P.; Legumina, R.; Leigui de Oliveira, M. A.; Letessier-Selvon, A.; Lhenry-Yvon, I.; Link, K.; Lopes, L.; López, R.; López Casado, A.; Luce, Q.; Lucero, A.; Malacari, M.; Mallamaci, M.; Mandat, D.; Mantsch, P.; Mariazzi, A. G.; Mariş, I. C.; Marsella, G.; Martello, D.; Martinez, H.; Martínez Bravo, O.; Masías Meza, J. J.; Mathes, H. J.; Mathys, S.; Matthews, J.; Matthews, J. A. J.; Matthiae, G.; Mayotte, E.; Mazur, P. O.; Medina, C.; Medina-Tanco, G.; Melo, D.; Menshikov, A.; Messina, S.; Micheletti, M. I.; Middendorf, L.; Minaya, I. A.; Miramonti, L.; Mitrica, B.; Mockler, D.; Molina-Bueno, L.; Mollerach, S.; Montanet, F.; Morello, C.; Mostafá, M.; Müller, G.; Muller, M. A.; Müller, S.; Naranjo, I.; Navas, S.; Nellen, L.; Neuser, J.; Nguyen, P. H.; Niculescu-Oglinzanu, M.; Niechciol, M.; Niemietz, L.; Niggemann, T.; Nitz, D.; Nosek, D.; Novotny, V.; Nožka, H.; Núñez, L. A.; Ochilo, L.; Oikonomou, F.; Olinto, A.; Pakk Selmi-Dei, D.; Palatka, M.; Pallotta, J.; Papenbreer, P.; Parente, G.; Parra, A.; Paul, T.; Pech, M.; Pedreira, F.; Pȩkala, J.; Pelayo, R.; Peña-Rodriguez, J.; Pereira, L. A. S.; Perrone, L.; Peters, C.; Petrera, S.; Phuntsok, J.; Piegaia, R.; Pierog, T.; Pieroni, P.; Pimenta, M.; Pirronello, V.; Platino, M.; Plum, M.; Porowski, C.; Prado, R. R.; Privitera, P.; Prouza, M.; Quel, E. J.; Querchfeld, S.; Quinn, S.; Ramos-Pollant, R.; Rautenberg, J.; Ravignani, D.; Reinert, D.; Revenu, B.; Ridky, J.; Risse, M.; Ristori, P.; Rizi, V.; Rodrigues de Carvalho, W.; Rodriguez Fernandez, G.; Rodriguez Rojo, J.; Rodríguez-Frías, M. D.; Rogozin, D.; Rosado, J.; Roth, M.; Roulet, E.; Rovero, A. C.; Saffi, S. J.; Saftoiu, A.; Salazar, H.; Saleh, A.; Salesa Greus, F.; Salina, G.; Sanabria Gomez, J. D.; Sánchez, F.; Sanchez-Lucas, P.; Santos, E. M.; Santos, E.; Sarazin, F.; Sarkar, B.; Sarmento, R.; Sarmiento-Cano, C.; Sato, R.; Scarso, C.; Schauer, M.; Scherini, V.; Schieler, H.; Schmidt, D.; Scholten, O.; Schovánek, P.; Schröder, F. G.; Schulz, A.; Schulz, J.; Schumacher, J.; Sciutto, S. J.; Segreto, A.; Settimo, M.; Shadkam, A.; Shellard, R. C.; Sigl, G.; Silli, G.; Sima, O.; Śmiałkowski, A.; Šmída, R.; Snow, G. R.; Sommers, P.; Sonntag, S.; Sorokin, J.; Squartini, R.; Stanca, D.; Stanič, S.; Stasielak, J.; Strafella, F.; Suarez, F.; Suarez Durán, M.; Sudholz, T.; Suomijärvi, T.; Supanitsky, A. D.; Sutherland, M. S.; Swain, J.; Szadkowski, Z.; Taborda, O. A.; Tapia, A.; Tepe, A.; Theodoro, V. M.; Timmermans, C.; Todero Peixoto, C. J.; Tomankova, L.; Tomé, B.; Tonachini, A.; Torralba Elipe, G.; Torres Machado, D.; Torri, M.; Travnicek, P.; Trini, M.; Ulrich, R.; Unger, M.; Urban, M.; Valbuena-Delgado, A.; Valdés Galicia, J. F.; Valiño, I.; Valore, L.; van Aar, G.; van Bodegom, P.; van den Berg, A. M.; van Vliet, A.; Varela, E.; Vargas Cárdenas, B.; Varner, G.; Vázquez, J. R.; Vázquez, R. A.; Veberič, D.; Verzi, V.; Vicha, J.; Villaseñor, L.; Vorobiov, S.; Wahlberg, H.; Wainberg, O.; Walz, D.; Watson, A. A.; Weber, M.; Weindl, A.; Wiencke, L.; Wilczyński, H.; Winchen, T.; Wittkowski, D.; Wundheiler, B.; Wykes, S.; Yang, L.; Yelos, D.; Yushkov, A.; Zas, E.; Zavrtanik, D.; Zavrtanik, M.; Zepeda, A.; Zimmermann, B.; Ziolkowski, M.; Zong, Z.; Zuccarello, F.

2017-03-01

AMIGA (Auger Muons and Infill for the Ground Array) is an upgrade of the Pierre Auger Observatory designed to extend its energy range of detection and to directly measure the muon content of the cosmic ray primary particle showers. The array will be formed by an infill of surface water-Cherenkov detectors associated with buried scintillation counters employed for muon counting. Each counter is composed of three scintillation modules, with a 10 m2 detection area per module. In this paper, a new generation of detectors, replacing the current multi-pixel photomultiplier tube (PMT) with silicon photo sensors (aka. SiPMs), is proposed. The selection of the new device and its front-end electronics is explained. A method to calibrate the counting system that ensures the performance of the detector is detailed. This method has the advantage of being able to be carried out in a remote place such as the one where the detectors are deployed. High efficiency results, i.e. 98% efficiency for the highest tested overvoltage, combined with a low probability of accidental counting (~2%), show a promising performance for this new system.

The development of infrared detectors and mechanisms for use in future infrared space missions

NASA Technical Reports Server (NTRS)

Houck, James R.

1995-01-01

The environment above earth's atmosphere offers significant advantages in sensitivity and wavelength coverage in infrared astronomy over ground-based observatories. In support of future infrared space missions, technology development efforts were undertaken to develop detectors sensitive to radiation between 2.5 micron and 200 micron. Additionally, work was undertaken to develop mechanisms supporting the imaging and spectroscopy requirements of infrared space missions. Arsenic-doped-Silicon and Antimony-doped-Silicon Blocked Impurity Band detectors, responsive to radiation between 4 micron and 45 micron, were produced in 128x128 picture element arrays with the low noise, high sensitivity performance needed for space environments. Technology development continued on Gallium-doped-Germanium detectors (for use between 80 micron and 200 micron), but were hampered by contamination during manufacture. Antimony-doped-Indium detectors (for use between 2.5 micron and 5 micron) were developed in a 256x256 pixel format with high responsive quantum efficiency and low dark current. Work began on adapting an existing cryogenic mechanism design for space-based missions; then was redirected towards an all-fixed optical design to improve reliability and lower projected mission costs.

Muon counting using silicon photomultipliers in the AMIGA detector of the Pierre Auger observatory

DOE PAGES

Aab, A.; Abreu, P.; Aglietta, M.; ...

2017-03-03

Here, AMIGA (Auger Muons and Infill for the Ground Array) is an upgrade of the Pierre Auger Observatory designed to extend its energy range of detection and to directly measure the muon content of the cosmic ray primary particle showers. The array will be formed by an infill of surface water-Cherenkov detectors associated with buried scintillation counters employed for muon counting. Each counter is composed of three scintillation modules, with a 10 m 2 detection area per module. In this paper, a new generation of detectors, replacing the current multi-pixel photomultiplier tube (PMT) with silicon photo sensors (aka. SiPMs), ismore » proposed. The selection of the new device and its front-end electronics is explained. A method to calibrate the counting system that ensures the performance of the detector is detailed. This method has the advantage of being able to be carried out in a remote place such as the one where the detectors are deployed. High efficiency results, i.e. 98% efficiency for the highest tested overvoltage, combined with a low probability of accidental counting (~2%), show a promising performance for this new system.« less

Pyroelectric detector arrays

NASA Technical Reports Server (NTRS)

Fripp, A. L.; Robertson, J. B.; Breckenridge, R. A. (Inventor)

1982-01-01

A pryoelectric detector array and the method for making it are described. A series of holes formed through a silicon dioxide layer on the surface of a silicon substrate forms the mounting fixture for the pyroelectric detector array. A series of nontouching strips of indium are formed around the holes to make contact with the backside electrodes and form the output terminals for individual detectors. A pyroelectric detector strip with front and back electrodes, respectively, is mounted over the strip. Biasing resistors are formed on the surface of the silicon dioxide layer and connected to the strips. A metallized pad formed on the surface of the layer is connected to each of the biasing resistors and to the film to provide the ground for the pyroelectric detector array.

Pyroelectric detector arrays

NASA Technical Reports Server (NTRS)

Fripp, A. L.; Robertson, J. B.; Breckenridge, R. (Inventor)

1982-01-01

A pyroelectric detector array and the method for using it are described. A series of holes formed through a silicon dioxide layer on the surface of a silicon substrate forms the mounting fixture for the pyroelectric detector array. A series of nontouching strips of indium are formed around the holes to make contact with the backside electrodes and form the output terminals for individual detectors. A pyroelectric detector strip with front and back electrodes, respectively, is mounted over the strips. Biasing resistors are formed on the surface of the silicon dioxide layer and connected to the strips. A metallized pad formed on the surface of layer is connected to each of the biasing resistors and to the film to provide the ground for the pyroelectric detector array.

Multicenter evaluation of a synthetic single-crystal diamond detector for CyberKnife small field size output factors.

PubMed

Russo, Serenella; Masi, Laura; Francescon, Paolo; Frassanito, Maria Cristina; Fumagalli, Maria Luisa; Marinelli, Marco; Falco, Maria Daniela; Martinotti, Anna Stefania; Pimpinella, Maria; Reggiori, Giacomo; Verona Rinati, Gianluca; Vigorito, Sabrina; Mancosu, Pietro

2016-04-01

The aim of the present work was to evaluate small field size output factors (OFs) using the latest diamond detector commercially available, PTW-60019 microDiamond, over different CyberKnife systems. OFs were measured also by silicon detectors routinely used by each center, considered as reference. Five Italian CyberKnife centers performed OFs measurements for field sizes ranging from 5 to 60mm, defined by fixed circular collimators (5 centers) and by Iris(™) variable aperture collimator (4 centers). Setup conditions were: 80cm source to detector distance, and 1.5cm depth in water. To speed up measurements two diamond detectors were used and their equivalence was evaluated. MonteCarlo (MC) correction factors for silicon detectors were used for comparing the OF measurements. Considering OFs values averaged over all centers, diamond data resulted lower than uncorrected silicon diode ones. The agreement between diamond and MC corrected silicon values was within 0.6% for all fixed circular collimators. Relative differences between microDiamond and MC corrected silicon diodes data for Iris(™) collimator were lower than 1.0% for all apertures in the totality of centers. The two microDiamond detectors showed similar characteristics, in agreement with the technical specifications. Excellent agreement between microDiamond and MC corrected silicon diode detectors OFs was obtained for both collimation systems fixed cones and Iris(™), demonstrating the microDiamond could be a suitable detector for CyberKnife commissioning and routine checks. These results obtained in five centers suggest that for CyberKnife systems microDiamond can be used without corrections even at the smallest field size. Copyright © 2016 Associazione Italiana di Fisica Medica. Published by Elsevier Ltd. All rights reserved.

The Belle II DEPFET pixel detector

NASA Astrophysics Data System (ADS)

Lütticke, F.

2013-02-01

The existing Japanese Flavour Factory (KEKB) is currently being upgraded and is foreseen to be comissioned by 2014. The new e+e- collider (SuperKEKB) will have an instantaneous luminosity of 8 × 1035cm-2s-1, 40 times higher than the current world record set by KEKB. In order to handle the increased event rate and the higher background and provide high data quality, the Belle detector is upgraded to Belle II. The increased particle rate requires a new vertex pixel detector with high granularity. This silicon detector will be based on DEPFET technology and will consist of two layers of active pixel sensors. By integrating a field effect transistor into every pixel on top of a fully depleted bulk, the DEPFET technology combines detection and in-pixel amplification. This technology allows good signal to noise performance with a very low material budget.

Prospects of Silicon Photomultipliers for Ground-Based Cosmic Ray Experiments

NASA Astrophysics Data System (ADS)

Peters, Christine; Bretz, Thomas; Hebbeker, Thomas; Kemp, Julian; Lauscher, Markus; Middendorf, Lukas; Niggemann, Tim; Schumacher, Johannes

An established technique to study ultra-high-energy cosmic rays is the detection of extensive air showers induced in the atmosphere of the earth. Thereby, cascades of secondary particles are produced consisting of a hadronic, an electromagnetic and a muonic component. Especially the determination of the number of muons and the amount of fluorescence light produced during the shower development allows to draw conclusions on the mass and energy of the primary particle. Thus, these are important observables for air shower experiments like for instance the Pierre Auger Observatory in Argentina, and its AugerPrime upgrade in progress. The steady development of semiconductor devices in the last years resulted in highly improved photon sensors, e.g., silicon photomultipliers (SiPMs). The small package and moderate bias voltage (<100 V) of these silicon devices allow for compact and robust designs. Detailed detector simulations, the development of dedicated front-end electronics, as well as construction and investigation of detector prototypes, are needed to study the applicability of SiPMs for cosmic ray experiments. We present our findings for two different detector techniques: First, we present the fluorescence telescope, FAMOUS. Its basic principle is based on a Fresnel lens focusing the incoming light onto a camera instrumented with 61 pixels. Secondly, the benefit of the application of SiPMs is studied for scintillator detectors designed for an improved determination of the muonic component in air showers of current experiments.

Application of photon detectors in the VIP2 experiment to test the Pauli Exclusion Principle

NASA Astrophysics Data System (ADS)

Pichler, A.; Bartalucci, S.; Bazzi, M.; Bertolucci, S.; Berucci, C.; Bragadireanu, M.; Cargnelli, M.; Clozza, A.; Curceanu, C.; De Paolis, L.; Di Matteo, S.; D'Ufflzi, A.; Egger, J.-P.; Guaraldo, C.; Iliescu, M.; Ishiwatari, T.; Laubenstein, M.; Marton, J.; Milotti, E.; Pietreanu, D.; Piscicchia, K.; Ponta, T.; Sbardella, E.; Scordo, A.; Shi, H.; Sirghi, D.; Sirghi, F.; Sperandio, L.; Vazquez-Doce, O.; Widmann, E.; Zmeskal, J.

2016-05-01

The Pauli Exclusion Principle (PEP) was introduced by the austrian physicist Wolfgang Pauli in 1925. Since then, several experiments have checked its validity. From 2006 until 2010, the VIP (Violation of the Pauli Principle) experiment took data at the LNGS underground laboratory to test the PEP. This experiment looked for electronic 2p to Is transitions in copper, where 2 electrons are in the Is state before the transition happens. These transitions violate the PEP. The lack of detection of X-ray photons coming from these transitions resulted in a preliminary upper limit for the violation of the PEP of 4.7 × 10-29. Currently, the successor experiment VIP2 is under preparation. The main improvements are, on one side, the use of Silicon Drift Detectors (SDDs) as X-ray photon detectors. On the other side an active shielding is implemented, which consists of plastic scintillator bars read by Silicon Photomultipliers (SiPMs). The employment of these detectors will improve the upper limit for the violation of the PEP by around 2 orders of magnitude.

Charge collection properties in an irradiated pixel sensor built in a thick-film HV-SOI process

NASA Astrophysics Data System (ADS)

Hiti, B.; Cindro, V.; Gorišek, A.; Hemperek, T.; Kishishita, T.; Kramberger, G.; Krüger, H.; Mandić, I.; Mikuž, M.; Wermes, N.; Zavrtanik, M.

2017-10-01

Investigation of HV-CMOS sensors for use as a tracking detector in the ATLAS experiment at the upgraded LHC (HL-LHC) has recently been an active field of research. A potential candidate for a pixel detector built in Silicon-On-Insulator (SOI) technology has already been characterized in terms of radiation hardness to TID (Total Ionizing Dose) and charge collection after a moderate neutron irradiation. In this article we present results of an extensive irradiation hardness study with neutrons up to a fluence of 1× 1016 neq/cm2. Charge collection in a passive pixelated structure was measured by Edge Transient Current Technique (E-TCT). The evolution of the effective space charge concentration was found to be compliant with the acceptor removal model, with the minimum of the space charge concentration being reached after 5× 1014 neq/cm2. An investigation of the in-pixel uniformity of the detector response revealed parasitic charge collection by the epitaxial silicon layer characteristic for the SOI design. The results were backed by a numerical simulation of charge collection in an equivalent detector layout.

Amorphous silicon ionizing particle detectors

DOEpatents

Street, Robert A.; Mendez, Victor P.; Kaplan, Selig N.

1988-01-01

Amorphous silicon ionizing particle detectors having a hydrogenated amorphous silicon (a--Si:H) thin film deposited via plasma assisted chemical vapor deposition techniques are utilized to detect the presence, position and counting of high energy ionizing particles, such as electrons, x-rays, alpha particles, beta particles and gamma radiation.

SOI metal-oxide-semiconductor field-effect transistor photon detector based on single-hole counting.

PubMed

Du, Wei; Inokawa, Hiroshi; Satoh, Hiroaki; Ono, Atsushi

2011-08-01

In this Letter, a scaled-down silicon-on-insulator (SOI) metal-oxide-semiconductor field-effect transistor (MOSFET) is characterized as a photon detector, where photogenerated individual holes are trapped below the negatively biased gate and modulate stepwise the electron current flowing in the bottom channel induced by the positive substrate bias. The output waveforms exhibit clear separation of current levels corresponding to different numbers of trapped holes. Considering this capability of single-hole counting, a small dark count of less than 0.02 s(-1) at room temperature, and low operation voltage of 1 V, SOI MOSFET could be a unique photon-number-resolving detector if the small quantum efficiency were improved. © 2011 Optical Society of America

CsI-Silicon Particle detector for Heavy ions Orbiting in Storage rings (CsISiPHOS)

NASA Astrophysics Data System (ADS)

Najafi, M. A.; Dillmann, I.; Bosch, F.; Faestermann, T.; Gao, B.; Gernhäuser, R.; Kozhuharov, C.; Litvinov, S. A.; Litvinov, Yu. A.; Maier, L.; Nolden, F.; Popp, U.; Sanjari, M. S.; Spillmann, U.; Steck, M.; Stöhlker, T.; Weick, H.

2016-11-01

A heavy-ion detector was developed for decay studies in the Experimental Storage Ring (ESR) at the GSI Helmholtz Centre for Heavy Ion Research in Darmstadt, Germany. This detector serves as a prototype for the in-pocket particle detectors for future experiments with the Collector Ring (CR) at FAIR (Facility for Antiproton and Ion Research). The detector includes a stack of six silicon pad sensors, a double-sided silicon strip detector (DSSD), and a CsI(Tl) scintillation detector. It was used successfully in a recent experiment for the detection of the β+-decay of highly charged 142Pm60+ ions. Based on the ΔE / E technique for particle identification and an energy resolution of 0.9% for ΔE and 0.5% for E (Full Width at Half Maximum (FWHM)), the detector is well-suited to distinguish neighbouring isobars in the region of interest.

Amorphous silicon ionizing particle detectors

DOEpatents

Street, R.A.; Mendez, V.P.; Kaplan, S.N.

1988-11-15

Amorphous silicon ionizing particle detectors having a hydrogenated amorphous silicon (a--Si:H) thin film deposited via plasma assisted chemical vapor deposition techniques are utilized to detect the presence, position and counting of high energy ionizing particles, such as electrons, x-rays, alpha particles, beta particles and gamma radiation. 15 figs.

Micromachined electron tunneling infrared sensors

NASA Technical Reports Server (NTRS)

Kenny, T. W.; Kaiser, W. J.; Podosek, J. A.; Rockstad, H. K.; Reynolds, J. K.

1993-01-01

The development of an improved Golay cell is reported. This new sensor is constructed entirely from micromachined silicon components. A silicon oxynitride (SiO(x)N(y)) membrane is deflected by the thermal expansion of a small volume of trapped gas. To detect the motion of the membrane, an electron tunneling transducer is used. This sensor detects electrons which tunnel through the classically forbidden barrier between a tip and a surface; the electron current is exponentially dependent on the separation between the tip and the surface. The sensitivity of tunneling transducers constructed was typically better than 10(exp -3) A/square root of Hz. Through use of the electron tunneling transducer, the scaling laws which have prevented the miniaturization of the Golay cell are avoided. This detector potentially offers low cost fabrication, compatibility with silicon readout electronics, and operation without cooling. Most importantly, this detector may offer better sensitivity than any other uncooled infrared sensor, with the exception of the original Golay cell.

Cosmic ray positron research and silicon track detector development

NASA Technical Reports Server (NTRS)

Jones, W. Vernon; Wefel, John P.

1991-01-01

The purpose was to conduct research on: (1) position sensing detector systems, particularly those based upon silicon detectors, for use in future balloon and satellite experiments; and (2) positrons, electrons, proton, anti-protons, and helium particles as measured by the NASA NMSU Balloon Magnet Facility.

Characterization of a Commercial Silicon Beta Cell

DOE Office of Scientific and Technical Information (OSTI.GOV)

Foxe, Michael P.; Hayes, James C.; Mayer, Michael F.

Silicon detectors are of interest for the verification of the Comprehensive Nuclear-Test-Ban Treaty (CTBT) due to their enhanced energy resolution compared to plastic scintillators beta cells. Previous work developing a figure-of-merit (FOM) for comparison of beta cells suggests that the minimum detectable activity (MDA) could be reduced by a factor of two to three with the use of silicon detectors. Silicon beta cells have been developed by CEA (France) and Lares Ltd. (Russia), with the PIPSBox developed by CEA being commercially available from Canberra for approximately $35k, but there is still uncertainty about the reproducibility of the capabilities in themore » field. PNNL is developing a high-resolution beta-gamma detector system in the shallow underground laboratory, which will utilize and characterize the operation of the PIPSBox detector. Throughout this report, we examine the capabilities of the PIPSBox as developed by CEA. The lessons learned through the testing and use of the PIPSBox will allow PNNL to strategically develop a silicon detector optimized to better suit the communities needs in the future.« less

Far-Infrared Blocked Impurity Band Detector Development

NASA Technical Reports Server (NTRS)

Hogue, H. H.; Guptill, M. T.; Monson, J. C.; Stewart, J. W.; Huffman, J. E.; Mlynczak, M. G.; Abedin, M. N.

2007-01-01

DRS Sensors & Targeting Systems, supported by detector materials supplier Lawrence Semiconductor Research Laboratory, is developing far-infrared detectors jointly with NASA Langley under the Far-IR Detector Technology Advancement Partnership (FIDTAP). The detectors are intended for spectral characterization of the Earth's energy budget from space. During the first year of this effort we have designed, fabricated, and evaluated pilot Blocked Impurity Band (BIB) detectors in both silicon and germanium, utilizing pre-existing customized detector materials and photolithographic masks. A second-year effort has prepared improved silicon materials, fabricated custom photolithographic masks for detector process, and begun detector processing. We report the characterization results from the pilot detectors and other progress.

A beta-ray spectrometer based on a two-or three silicon detector coincidence telescope

NASA Astrophysics Data System (ADS)

Horowitz, Y. S.; Weizman, Y.; Hirning, C. R.

1996-02-01

This report describes the operation of a beta-ray energy spectrometer based on a silicon detector telescope using two or three elements. The front detector is a planar, totally-depleted, silicon surface barrier detector that is 97 μm thick, the back detector is a room-temperature, lithium compensated, silicon detector that is 5000 μm thick, and the intermediate detector is similar to the front detector but 72 μm thick and intended to be used only in intense photon fields. The three detectors are mounted in a light-tight aluminum housing. The capability of the spectrometer to reject photons is based upon the fact that the incident photon will have a small probability of simultaneously losing detectable energy in two detectors, and an even smaller probability of losing detectable energy in all three detectors. Electrons will, however, almost always record measurable events in either the front two or all three detectors. A coincidence requirement between the detectors thus rejects photon induced events. With a 97 μm thick detector the lower energy coincidence threshold is approximately 110 keV. With an ultra-thin 40 μm thick front detector, and operated at 15°C, the spectrometer is capable of detecting even 60-70 keV electrons with a coincidence efficiency of 60%. The spectrometer has been used to measure beta radiation fields in CANDU reactor working environments, and the spectral information is intended to support dose algorithms for the LiF TLD chips used in the Ontario Hydro dosimetry program.

3D-FBK Pixel Sensors: Recent Beam Tests Results with Irradiated Devices

DOE Office of Scientific and Technical Information (OSTI.GOV)

Micelli, A.; /INFN, Trieste /Udine U.; Helle, K.

2012-04-30

The Pixel Detector is the innermost part of the ATLAS experiment tracking device at the Large Hadron Collider, and plays a key role in the reconstruction of the primary vertices from the collisions and secondary vertices produced by short-lived particles. To cope with the high level of radiation produced during the collider operation, it is planned to add to the present three layers of silicon pixel sensors which constitute the Pixel Detector, an additional layer (Insertable B-Layer, or IBL) of sensors. 3D silicon sensors are one of the technologies which are under study for the IBL. 3D silicon technology ismore » an innovative combination of very-large-scale integration and Micro-Electro-Mechanical-Systems where electrodes are fabricated inside the silicon bulk instead of being implanted on the wafer surfaces. 3D sensors, with electrodes fully or partially penetrating the silicon substrate, are currently fabricated at different processing facilities in Europe and USA. This paper reports on the 2010 June beam test results for irradiated 3D devices produced at FBK (Trento, Italy). The performance of these devices, all bump-bonded with the ATLAS pixel FE-I3 read-out chip, is compared to that observed before irradiation in a previous beam test.« less

Blocked impurity band hybrid infrared focal plane arrays for astronomy

NASA Technical Reports Server (NTRS)

Reynolds, D. B.; Seib, D. H.; Stetson, S. B.; Herter, T.; Rowlands, N.

1989-01-01

High-performance infrared hybrid focal plane arrays using 10- x 50-element Si:As blocked-impurity-band (BIB) detectors (cutoff wavelength = 28 microns) and matching switched MOSFET multiplexers have been developed and characterized for space astronomy. Use of impurity-band-conduction technology provides detectors which are nuclear-radiation-hard and free of the many anomalies associated with conventional silicon photoconductive detectors. Emphasis in the present work is on recent advances in detector material quality which have led to significantly improved detector and hybrid characteristics. Results demonstrating increased quantum efficiency (particularly at short-wavelength infrared), obtained by varying the BIB detector properties (infrared active layer thickness and arsenic doping profile), are summarized. Measured read noise and dark current for different temperatures are reported. The hybrid array performance achieved demonstrates that BIB detectors are well suited for use in astronomical instrumentation.

A system for characterization of DEPFET silicon pixel matrices and test beam results

NASA Astrophysics Data System (ADS)

Furletov, Sergey; DEPFET Collaboration

2011-02-01

The DEPFET pixel detector offers first stage in-pixel amplification by incorporating a field effect transistor in the high resistivity silicon substrate. In this concept, a very small input capacitance can be realized thus allowing for low noise measurements. This makes DEPFET sensors a favorable technology for tracking in particle physics. Therefore a system with a DEPFET pixel matrix was developed to test DEPFET performance for an application as a vertex detector for the Belle II experiment. The system features a current based, row-wise readout of a DEPFET pixel matrix with a designated readout chip, steering chips for matrix control, a FPGA based data acquisition board, and a dedicated software package. The system was successfully operated in both test beam and lab environment. In 2009 new DEPFET matrices have been characterized in a 120 GeV pion beam at the CERN SPS. The current status of the DEPFET system and test beam results are presented.

Evaluation of ion-implanted-silicon detectors for use in intraoperative positron-sensitive probes.

PubMed

Raylman, R R; Wahl, R L

1996-11-01

The continuing development of probes for use with beta (positron and electron) emitting radionuclides may result in more complete excision of tracer-avid tumors. Perhaps one of the most promising radiopharmaceuticals for this task is 18F-labeled-Fluoro-2-Deoxy-D-Glucose (FDG). This positron-emitting agent has been demonstrated to be avidly and rapidly absorbed by many human cancers. We have investigated the use of ion-implanted-silicon detectors in intraoperative positron-sensitive surgical probes for use with FDG. These detectors possess very high positron detection efficiency, while the efficiency for 511 keV photon detection is low. The spatial resolution, as well as positron and annihilation photon detection sensitivity, of an ion-implanted-silicon detector used with 18F was measured at several energy thresholds. In addition, the ability of the device to detect the presence of relatively small amounts of FDG during surgery was evaluated by simulating a surgical field in which some tumor was left intact following lesion excision. The performance of the ion-implanted-silicon detector was compared to the operating characteristics of a positron-sensitive surgical probe which utilizes plastic scintillator. In all areas of performance the ion-implanted-silicon detector proved superior to the plastic scintillator-based probe. At an energy threshold of 14 keV positron sensitivity measured for the ion-implanted-silicon detector was 101.3 cps/kBq, photon sensitivity was 7.4 cps/kBq. In addition, spatial resolution was found to be relatively unaffected by the presence of distant sources of annihilation photon flux. Finally, the detector was demonstrated to be able to localize small amounts of FDG in a simulated tumor bed; indicating that this device has promise as a probe to aid in FDG-guided surgery.

Modeling radiation damage to pixel sensors in the ATLAS detector

NASA Astrophysics Data System (ADS)

Ducourthial, A.

2018-03-01

Silicon pixel detectors are at the core of the current and planned upgrade of the ATLAS detector at the Large Hadron Collider (LHC) . As the closest detector component to the interaction point, these detectors will be subject to a significant amount of radiation over their lifetime: prior to the High-Luminosity LHC (HL-LHC) [1], the innermost layers will receive a fluence in excess of 1015 neq/cm2 and the HL-LHC detector upgrades must cope with an order of magnitude higher fluence integrated over their lifetimes. Simulating radiation damage is essential in order to make accurate predictions for current and future detector performance that will enable searches for new particles and forces as well as precision measurements of Standard Model particles such as the Higgs boson. We present a digitization model that includes radiation damage effects on the ATLAS pixel sensors for the first time. In addition to thoroughly describing the setup, we present first predictions for basic pixel cluster properties alongside early studies with LHC Run 2 proton-proton collision data.

First results of a novel Silicon Drift Detector array designed for low energy X-ray fluorescence spectroscopy

NASA Astrophysics Data System (ADS)

Rachevski, Alexandre; Ahangarianabhari, Mahdi; Bellutti, Pierluigi; Bertuccio, Giuseppe; Brigo, Elena; Bufon, Jernej; Carrato, Sergio; Castoldi, Andrea; Cautero, Giuseppe; Fabiani, Sergio; Giacomini, Gabriele; Gianoncelli, Alessandra; Giuressi, Dario; Guazzoni, Chiara; Kourousias, George; Liu, Chang; Menk, Ralf Hendrik; Montemurro, Giuseppe Vito; Picciotto, Antonino; Piemonte, Claudio; Rashevskaya, Irina; Shi, Yongbiao; Stolfa, Andrea; Vacchi, Andrea; Zampa, Gianluigi; Zampa, Nicola; Zorzi, Nicola

2016-07-01

We developed a trapezoidal shaped matrix with 8 cells of Silicon Drift Detectors (SDD) featuring a very low leakage current (below 180 pA/cm2 at 20 °C) and a shallow uniformly implanted p+ entrance window that enables sensitivity down to few hundreds of eV. The matrix consists of a completely depleted volume of silicon wafer subdivided into 4 square cells and 4 half-size triangular cells. The energy resolution of a single square cell, readout by the ultra-low noise SIRIO charge sensitive preamplifier, is 158 eV FWHM at 5.9 keV and 0 °C. The total sensitive area of the matrix is 231 mm2 and the wafer thickness is 450 μm. The detector was developed in the frame of the INFN R&D project ReDSoX in collaboration with FBK, Trento. Its trapezoidal shape was chosen in order to optimize the detection geometry for the experimental requirements of low energy X-ray fluorescence (LEXRF) spectroscopy, aiming at achieving a large detection angle. We plan to exploit the complete detector at the TwinMic spectromicroscopy beamline at the Elettra Synchrotron (Trieste, Italy). The complete system, composed of 4 matrices, increases the solid angle coverage of the isotropic photoemission hemisphere about 4 times over the present detector configuration. We report on the layout of the SDD matrix and of the experimental set-up, as well as the spectroscopic performance measured both in the laboratory and at the experimental beamline.

Advanced detectors and signal processing for bubble memories

NASA Technical Reports Server (NTRS)

Kryder, M. H.; Rasky, P. H. L.; Greve, D. W.

1985-01-01

The feasibility of combining silicon and magnetic bubble technologies is demonstrated. Results of bubble film annealing indicate that a low temperature silicon on garnet technology is the most likely one to succeed commercially. Annealing ambients are also shown to have a major effect on the magnetic properties of bubble films. Functional MOSFETs were fabricated on bubble films coated with thick (approximately 1 micron) SiO2 layers. The two main problems with these silicon on garnet MOSFETs are low electron mobilities and large gate leakage currents. Results indicate that the laser recrystallized silicon and gate oxide (SiO2) layers are contaminated. The data suggest that part of the contaminating ions originate in the sputtered oxide spacer layer and part originates in the bubble film itself. A diffusion barrier, such as silicon nitride, placed between the bubble film and the silicon layer should eliminate the contamination induced problem.

Development of a modular test system for the silicon sensor R&D of the ATLAS Upgrade

DOE Office of Scientific and Technical Information (OSTI.GOV)

Liu, H.; Benoit, M.; Chen, H.

High Voltage CMOS sensors are a promising technology for tracking detectors in collider experiments. Extensive R&D studies are being carried out by the ATLAS Collaboration for a possible use of HV-CMOS in the High Luminosity LHC upgrade of the Inner Tracker detector. CaRIBOu (Control and Readout Itk BOard) is a modular test system developed to test Silicon based detectors. It currently includes five custom designed boards, a Xilinx ZC706 development board, FELIX (Front-End LInk eXchange) PCIe card and a host computer. A software program has been developed in Python to control the CaRIBOu hardware. CaRIBOu has been used in themore » testbeam of the HV-CMOS sensor AMS180v4 at CERN. Preliminary results have shown that the test system is very versatile. In conclusion, further development is ongoing to adapt to different sensors, and to make it available to various lab test stands.« less

Development of a modular test system for the silicon sensor R&D of the ATLAS Upgrade

DOE PAGES

Liu, H.; Benoit, M.; Chen, H.; ...

2017-01-11

High Voltage CMOS sensors are a promising technology for tracking detectors in collider experiments. Extensive R&D studies are being carried out by the ATLAS Collaboration for a possible use of HV-CMOS in the High Luminosity LHC upgrade of the Inner Tracker detector. CaRIBOu (Control and Readout Itk BOard) is a modular test system developed to test Silicon based detectors. It currently includes five custom designed boards, a Xilinx ZC706 development board, FELIX (Front-End LInk eXchange) PCIe card and a host computer. A software program has been developed in Python to control the CaRIBOu hardware. CaRIBOu has been used in themore » testbeam of the HV-CMOS sensor AMS180v4 at CERN. Preliminary results have shown that the test system is very versatile. In conclusion, further development is ongoing to adapt to different sensors, and to make it available to various lab test stands.« less

Detecting single-electron events in TEM using low-cost electronics and a silicon strip sensor.

PubMed

Gontard, Lionel C; Moldovan, Grigore; Carmona-Galán, Ricardo; Lin, Chao; Kirkland, Angus I

2014-04-01

There is great interest in developing novel position-sensitive direct detectors for transmission electron microscopy (TEM) that do not rely in the conversion of electrons into photons. Direct imaging improves contrast and efficiency and allows the operation of the microscope at lower energies and at lower doses without loss in resolution, which is especially important for studying soft materials and biological samples. We investigate the feasibility of employing a silicon strip detector as an imaging detector for TEM. This device, routinely used in high-energy particle physics, can detect small variations in electric current associated with the impact of a single charged particle. The main advantages of using this type of sensor for direct imaging in TEM are its intrinsic radiation hardness and large detection area. Here, we detail design, simulation, fabrication and tests in a TEM of the front-end electronics developed using low-cost discrete components and discuss the limitations and applications of this technology for TEM.

LabVIEW-based control and acquisition system for the dosimetric characterization of a silicon strip detector.

PubMed

Ovejero, M C; Pérez Vega-Leal, A; Gallardo, M I; Espino, J M; Selva, A; Cortés-Giraldo, M A; Arráns, R

2017-02-01

The aim of this work is to present a new data acquisition, control, and analysis software system written in LabVIEW. This system has been designed to obtain the dosimetry of a silicon strip detector in polyethylene. It allows the full automation of the experiments and data analysis required for the dosimetric characterization of silicon detectors. It becomes a useful tool that can be applied in the daily routine check of a beam accelerator.

Proton Straggling in Thick Silicon Detectors

NASA Technical Reports Server (NTRS)

Selesnick, R. S.; Baker, D. N.; Kanekal, S. G.

2017-01-01

Straggling functions for protons in thick silicon radiation detectors are computed by Monte Carlo simulation. Mean energy loss is constrained by the silicon stopping power, providing higher straggling at low energy and probabilities for stopping within the detector volume. By matching the first four moments of simulated energy-loss distributions, straggling functions are approximated by a log-normal distribution that is accurate for Vavilov k is greater than or equal to 0:3. They are verified by comparison to experimental proton data from a charged particle telescope.

Investigating the Inverse Square Law with the Timepix Hybrid Silicon Pixel Detector: A CERN [at] School Demonstration Experiment

ERIC Educational Resources Information Center

Whyntie, T.; Parker, B.

2013-01-01

The Timepix hybrid silicon pixel detector has been used to investigate the inverse square law of radiation from a point source as a demonstration of the CERN [at] school detector kit capabilities. The experiment described uses a Timepix detector to detect the gamma rays emitted by an [superscript 241]Am radioactive source at a number of different…

Detector and energy analyzer for energetic-hydrogen in beams and plasmas

DOEpatents

Bastasz, R.J.; Hughes, R.C.; Wampler, W.R.

1988-11-01

A detector for detecting energetic hydrogen ions and atoms ranging in energy from about 1 eV up to 1 keV in an evacuated environment includes a Schottky diode with a palladium or palladium-alloy gate metal applied to a silicon-dioxide layer on an n-silicon substrate. An array of the energetic-hydrogen detectors having a range of energy sensitivities form a plasma energy analyzer having a rapid response time and a sensitivity for measuring fluxes of energetic hydrogen. The detector is sensitive to hydrogen and its isotopes but is insensitive to non-hydrogenic particles. The array of energetic-hydrogen detectors can be formed on a single silicon chip, with thin-film layers of gold metal applied in various thicknesses to successive detectors in the array. The gold layers serve as particle energy-filters so that each detector is sensitive to a different range of hydrogen energies. 4 figs.

First performance results of the Phobos silicon detectors

NASA Astrophysics Data System (ADS)

Pernegger, H.; Back, B. B.; Baker, M. D.; Barton, D. S.; Betts, R. R.; Bindel, R.; Budzanowski, A.; Busza, W.; Carroll, A.; Decowski, M. P.; Garcia, E.; George, N.; Gulbrandsen, K.; Gushue, S.; Halliwell, C.; Hamblen, J.; Heintzelman, G. A.; Henderson, C.; Hołyński, R.; Hofman, D. J.; Holzman, B.; Johnson, E.; Kane, J. L.; Katzy, J.; Khan, N.; Kucewicz, W.; Kulinich, P.; Lin, W. T.; Manly, S.; McLeod, D.; Michalowski, J.; Mignerey, A.; Mülmenstädt, J.; Nouicer, R.; Olszewski, A.; Pak, R.; Park, I. C.; Reed, C.; Remsberg, L. P.; Reuter, M.; Roland, C.; Roland, G.; Rosenberg, L.; Sarin, P.; Sawicki, P.; Skulski, W.; Steadman, S. G.; Stephans, G. S. F.; Steinberg, P.; Stodulski, M.; Sukhanov, A.; Tang, J.-L.; Teng, R.; Trzupek, A.; Vale, C.; van Nieuwenhuizen, G. J.; Verdier, R.; Wadsworth, B.; Wolfs, F. L. H.; Wosiek, B.; Woźniak, K.; Wuosmaa, A. H.; Wysłouch, B.

2001-11-01

The Phobos experiment concluded its first year of operation at RHIC taking data in Au-Au nucleus collisions at s nn=65 GeV and 130 GeV/ nucleon pair. First preliminary results of the performances of our silicon detectors in the experiment are summarized. The Phobos experiment uses silicon pad detectors for both tracking and multiplicity measurements. The silicon sensors vary strongly in their pad geometry. In this paper, we compare the signal response, the signal uniformity and signal-to-noise performance as measured in the experiment for the different geometries. Additionally, we investigate effects of very high channel occupancy on the signal response.

Radiation damage effects by electrons, protons, and neutrons in Si/Li/ detectors.

NASA Technical Reports Server (NTRS)

Liu, Y. M.; Coleman, J. A.

1972-01-01

The degradation in performance of lithium-compensated silicon nuclear particle detectors induced by irradiation at room temperature with 0.6-MeV and 1.5-MeV electrons, 1.9-MeV protons, and fast neutrons from a plutonium-beryllium source has been investigated. With increasing fluence, the irradiations produced an increase of detector leakage current, noise, capacitance, and a degradation in the performance of the detector as a charged-particle energy spectrometer. Following the irradiations, annealing effects were observed when the detectors were reverse-biased at their recommended operating voltages. Upon removal of bias, a continuous degradation of detector performance characteristics occurred. Detectors which had been damaged by electrons and protons exhibited a stabilization in their characteristics within two weeks after irradiation, whereas detectors damaged by neutrons had a continuous degradation of performance over a period of several months.

Entwicklungsarbeit am Spurendetektor fur das CDF Experiment am Tevatron (in German/English)

DOE Office of Scientific and Technical Information (OSTI.GOV)

Hartmann, Frank

2000-02-01

Silicon, the element, which revolutionized the development of electronics, is known as an important and multiusable material, dominating todays electronic technology. It's properties are well investigated and today well known. Silicon is used in solar cells, computers and telecommunications. Since the Sixties semiconductors have been used as particle detectors. Initially they were operated in fixed- target experiments as calorimeters and as detectors with a high precision track reconstruction. Since the Eighties they are widely used in collider experiments as silicon microstrip or silicon pixel detectors near the primary vertex. Silicon sensors have a very good intrinsic energy resolution: for everymore » 3.6 eV released by a particle crossing the medium, one electron-hole pair is produced. Compared to 30 eV required to ionize a gas molecule in a gaseous detector, one gets 10 times the number of particles. The average energy loss and high ionized particle number with 390 e V / μm ~ 108 (electron - hole pairs)/ μm is effectively high due to the high density of silicon. These detectors allow a high precision reconstruction of tracks, primary and secondary vertices, which are especially important for b flavour tagging. The Tevatron and its detectors are being upgraded for the next data taking run starting in 2001 (RUN II). The Collider Detector at Fermilab (CDF) [2] for the upcoming Run II and its upgraded components are described in chapter 2. The main upgrade project is the design and construction of a completely new inner tracking system.« less

PbS-PbSe IR detector arrays

NASA Technical Reports Server (NTRS)

Barrett, John R. (Inventor)

1986-01-01

A silicon wafer is provided which does not employ individually bonded leads between the IR sensitive elements and the input stages of multiplexers. The wafer is first coated with lead selenide in a first detector array area and is thereafter coated with lead sulfide within a second detector array area. The described steps result in the direct chemical deposition of lead selenide and lead sulfide upon the silicon wafer to eliminate individual wire bonding, bumping, flip chipping, planar interconnecting methods of connecting detector array elements to silicon chip circuitry, e.g., multiplexers, to enable easy fabrication of very long arrays. The electrode structure employed, produces an increase in the electrical field gradient between the electrodes for a given volume of detector material, relative to conventional electrode configurations.

Detector Development for the abBA Experiment.

PubMed

Seo, P-N; Bowman, J D; Mitchell, G S; Penttila, S I; Wilburn, W S

2005-01-01

We have developed a new type of field-expansion spectrometer to measure the neutron beta decay correlations (a, b, B, and A). A precision measurement of these correlations places stringent requirements on charged particle detectors. The design employs large area segmented silicon detectors to detect both protons and electrons in coincidence. Other requirements include good energy resolution (< 5 keV), a thin dead layer to allow observation of 30-keV protons, fast timing resolution (~1 ns) to reconstruct electron-backscattering events, and nearly unity efficiency. We report results of testing commercially available surface-barrier silicon detectors for energy resolution and timing performance, and measurement of the dead-layer thickness of ion-implanted silicon detectors with a 3.2 MeV alpha source.

N-Type delta Doping of High-Purity Silicon Imaging Arrays

NASA Technical Reports Server (NTRS)

Blacksberg, Jordana; Hoenk, Michael; Nikzad, Shouleh

2005-01-01

A process for n-type (electron-donor) delta doping has shown promise as a means of modifying back-illuminated image detectors made from n-doped high-purity silicon to enable them to detect high-energy photons (ultraviolet and x-rays) and low-energy charged particles (electrons and ions). This process is applicable to imaging detectors of several types, including charge-coupled devices, hybrid devices, and complementary metal oxide/semiconductor detector arrays. Delta doping is so named because its density-vs.-depth characteristic is reminiscent of the Dirac delta function (impulse function): the dopant is highly concentrated in a very thin layer. Preferably, the dopant is concentrated in one or at most two atomic layers in a crystal plane and, therefore, delta doping is also known as atomic-plane doping. The use of doping to enable detection of high-energy photons and low-energy particles was reported in several prior NASA Tech Briefs articles. As described in more detail in those articles, the main benefit afforded by delta doping of a back-illuminated silicon detector is to eliminate a "dead" layer at the back surface of the silicon wherein high-energy photons and low-energy particles are absorbed without detection. An additional benefit is that the delta-doped layer can serve as a back-side electrical contact. Delta doping of p-type silicon detectors is well established. The development of the present process addresses concerns specific to the delta doping of high-purity silicon detectors, which are typically n-type. The present process involves relatively low temperatures, is fully compatible with other processes used to fabricate the detectors, and does not entail interruption of those processes. Indeed, this process can be the last stage in the fabrication of an imaging detector that has, in all other respects, already been fully processed, including metallized. This process includes molecular-beam epitaxy (MBE) for deposition of three layers, including metallization. The success of the process depends on accurate temperature control, surface treatment, growth of high-quality crystalline silicon, and precise control of thicknesses of layers. MBE affords the necessary nanometer- scale control of the placement of atoms for delta doping. More specifically, the process consists of MBE deposition of a thin silicon buffer layer, the n-type delta doping layer, and a thin silicon cap layer. The n dopant selected for initial experiments was antimony, but other n dopants as (phosphorus or arsenic) could be used. All n-type dopants in silicon tend to surface-segregate during growth, leading to a broadened dopant-concentration- versus-depth profile. In order to keep the profile as narrow as possible, the substrate temperature is held below 300 C during deposition of the silicon cap layer onto the antimony delta layer. The deposition of silicon includes a silicon- surface-preparation step, involving H-termination, that enables the growth of high-quality crystalline silicon at the relatively low temperature with close to full electrical activation of donors in the surface layer.

A Low-Noise X-ray Astronomical Silicon-On-Insulator Pixel Detector Using a Pinned Depleted Diode Structure

PubMed Central

Kamehama, Hiroki; Kawahito, Shoji; Shrestha, Sumeet; Nakanishi, Syunta; Yasutomi, Keita; Takeda, Ayaki; Tsuru, Takeshi Go

2017-01-01

This paper presents a novel full-depletion Si X-ray detector based on silicon-on-insulator pixel (SOIPIX) technology using a pinned depleted diode structure, named the SOIPIX-PDD. The SOIPIX-PDD greatly reduces stray capacitance at the charge sensing node, the dark current of the detector, and capacitive coupling between the sensing node and SOI circuits. These features of the SOIPIX-PDD lead to low read noise, resulting high X-ray energy resolution and stable operation of the pixel. The back-gate surface pinning structure using neutralized p-well at the back-gate surface and depleted n-well underneath the p-well for all the pixel area other than the charge sensing node is also essential for preventing hole injection from the p-well by making the potential barrier to hole, reducing dark current from the Si-SiO2 interface and creating lateral drift field to gather signal electrons in the pixel area into the small charge sensing node. A prototype chip using 0.2 μm SOI technology shows very low readout noise of 11.0 e−rms, low dark current density of 56 pA/cm2 at −35 °C and the energy resolution of 200 eV(FWHM) at 5.9 keV and 280 eV (FWHM) at 13.95 keV. PMID:29295523

A Low-Noise X-ray Astronomical Silicon-On-Insulator Pixel Detector Using a Pinned Depleted Diode Structure.

PubMed

Kamehama, Hiroki; Kawahito, Shoji; Shrestha, Sumeet; Nakanishi, Syunta; Yasutomi, Keita; Takeda, Ayaki; Tsuru, Takeshi Go; Arai, Yasuo

2017-12-23

This paper presents a novel full-depletion Si X-ray detector based on silicon-on-insulator pixel (SOIPIX) technology using a pinned depleted diode structure, named the SOIPIX-PDD. The SOIPIX-PDD greatly reduces stray capacitance at the charge sensing node, the dark current of the detector, and capacitive coupling between the sensing node and SOI circuits. These features of the SOIPIX-PDD lead to low read noise, resulting high X-ray energy resolution and stable operation of the pixel. The back-gate surface pinning structure using neutralized p-well at the back-gate surface and depleted n-well underneath the p-well for all the pixel area other than the charge sensing node is also essential for preventing hole injection from the p-well by making the potential barrier to hole, reducing dark current from the Si-SiO₂ interface and creating lateral drift field to gather signal electrons in the pixel area into the small charge sensing node. A prototype chip using 0.2 μm SOI technology shows very low readout noise of 11.0 e - rms , low dark current density of 56 pA/cm² at -35 °C and the energy resolution of 200 eV(FWHM) at 5.9 keV and 280 eV (FWHM) at 13.95 keV.

UV-visible sensors based on polymorphous silicon

NASA Astrophysics Data System (ADS)

Guedj, Cyril S.; Cabarrocas, Pere R. i.; Massoni, Nicolas; Moussy, Norbert; Morel, Damien; Tchakarov, Svetoslav; Bonnassieux, Yvan

2003-09-01

UV-based imaging systems can be used for low-altitude rockets detection or biological agents identification (for instance weapons containing ANTHRAX). Compared to conventional CCD technology, CMOS-based active pixel sensors provide several advantages, including excellent electro-optical performances, high integration, low voltage operation, low power consumption, low cost, long lifetime, and robustness against environment. The monolithic integration of UV, visible and infrared detectors on the same uncooled CMOS smart system would therefore represent a major advance in the combat field, for characterization and representation of targets and backgrounds. In this approach, we have recently developped a novel technology using polymorphous silicon. This new material, fully compatible with above-IC silicon technology, is made of nanometric size ordered domains embedded in an amorphous matrix. The typical quantum efficiency of detectors made of this nano-material reach up to 80 % at 550 nm and 30 % in the UV range, depending of the design and the growth parameters. Furthermore, a record dark current of 20 pA/cm2 at -3 V has been reached. In addition, this new generation of sensors is significantly faster and more stable than their amorphous silicon counterparts. In this paper, we will present the relationship between the sensor technology and the overall performances.

Micro-machined thermo-conductivity detector

DOEpatents

Yu, Conrad

2003-01-01

A micro-machined thermal conductivity detector for a portable gas chromatograph. The detector is highly sensitive and has fast response time to enable detection of the small size gas samples in a portable gas chromatograph which are in the order of nanoliters. The high sensitivity and fast response time are achieved through micro-machined devices composed of a nickel wire, for example, on a silicon nitride window formed in a silicon member and about a millimeter square in size. In addition to operating as a thermal conductivity detector, the silicon nitride window with a micro-machined wire therein of the device can be utilized for a fast response heater for PCR applications.

Prototyping of petalets for the Phase-II upgrade of the silicon strip tracking detector of the ATLAS experiment

NASA Astrophysics Data System (ADS)

Kuehn, S.; Benítez, V.; Fernández-Tejero, J.; Fleta, C.; Lozano, M.; Ullán, M.; Lacker, H.; Rehnisch, L.; Sperlich, D.; Ariza, D.; Bloch, I.; Díez, S.; Gregor, I.; Keller, J.; Lohwasser, K.; Poley, L.; Prahl, V.; Zakharchuk, N.; Hauser, M.; Jakobs, K.; Mahboubi, K.; Mori, R.; Parzefall, U.; Bernabéu, J.; Lacasta, C.; Marco-Hernandez, R.; Rodriguez Rodriguez, D.; Santoyo, D.; Solaz Contell, C.; Soldevila Serrano, U.; Affolder, T.; Greenall, A.; Gallop, B.; Phillips, P. W.; Cindro, V.

2018-03-01

In the high luminosity era of the Large Hadron Collider, the instantaneous luminosity is expected to reach unprecedented values, resulting in about 200 proton-proton interactions in a typical bunch crossing. To cope with the resultant increase in occupancy, bandwidth and radiation damage, the ATLAS Inner Detector will be replaced by an all-silicon system, the Inner Tracker (ITk). The ITk consists of a silicon pixel and a strip detector and exploits the concept of modularity. Prototyping and testing of various strip detector components has been carried out. This paper presents the developments and results obtained with reduced-size structures equivalent to those foreseen to be used in the forward region of the silicon strip detector. Referred to as petalets, these structures are built around a composite sandwich with embedded cooling pipes and electrical tapes for routing the signals and power. Detector modules built using electronic flex boards and silicon strip sensors are glued on both the front and back side surfaces of the carbon structure. Details are given on the assembly, testing and evaluation of several petalets. Measurement results of both mechanical and electrical quantities are shown. Moreover, an outlook is given for improved prototyping plans for large structures.

Detection of ternary and quaternary fission fragments from 252Cf with a position-sensitive ΔE-E telescope based on silicon detectors

NASA Astrophysics Data System (ADS)

Ahmadov, G. S.; Kopatch, Yu. N.; Telezhnikov, S. A.; Ahmadov, F. I.; Granja, C.; Garibov, A. A.; Pospisil, S.

2015-07-01

The silicon based pixel detector Timepix is a multi-parameter detector which gives simultaneously information about position, energy and arrival time of a particle hitting the detector. Applying the ΔE-E method with these detectors makes it possible to determine types of detected particles, separating them by charge. Using a thin silicon detector with thickness of 12 μm combined with a Timepix (300 μm), a ΔE-E telescope has been constructed. The telescope provides information about position, energy, time and type of registered particles. The emission probabilities and the energy distributions of ternary particles (He, Li, Be) from 252Cf spontaneous fission source were determined using this telescope. Besides the ternary particles, a few events were collected, which were attributed to the "pseudo" quaternary fission.

Detector arrays for low-background space infrared astronomy

NASA Technical Reports Server (NTRS)

Mccreight, C. R.; Mckelvey, M. E.; Goebel, J. H.; Anderson, G. M.; Lee, J. H.

1986-01-01

The status of development and characterization tests of integrated infrared detector array technology for astronomy applications is described. The devices under development include intrinsic, extrinsic silicon, and extrinsic germanium detectors, with hybrid silicon multiplexers. Laboratory test results and successful astronomy imagery have established the usefulness of integrated arrays in low-background astronomy applications.

Detector arrays for low-background space infrared astronomy

NASA Technical Reports Server (NTRS)

Mccreight, C. R.; Mckelvey, M. E.; Goebel, J. H.; Anderson, G. M.; Lee, J. H.

1986-01-01

The status of development and characterization tests of integrated infrared detector array technology for astronomy applications is described. The devices under development include intrinsic, extrinsic silicon, and extrinsic germanium detectors, with hybrid silicon multiplexers. Laboratary test results and successful astronomy imagery have established the usefulness of integrated arrays in low-background astronomy applications.

Silicon surface barrier detectors used for liquid hydrogen density measurement

NASA Technical Reports Server (NTRS)

James, D. T.; Milam, J. K.; Winslett, H. B.

1968-01-01

Multichannel system employing a radioisotope radiation source, strontium-90, radiation detector, and a silicon surface barrier detector, measures the local density of liquid hydrogen at various levels in a storage tank. The instrument contains electronic equipment for collecting the density information, and a data handling system for processing this information.

Mechanical studies towards a silicon micro-strip super module for the ATLAS inner detector upgrade at the high luminosity LHC

NASA Astrophysics Data System (ADS)

Barbier, G.; Cadoux, F.; Clark, A.; Endo, M.; Favre, Y.; Ferrere, D.; Gonzalez-Sevilla, S.; Hanagaki, K.; Hara, K.; Iacobucci, G.; Ikegami, Y.; Jinnouchi, O.; La Marra, D.; Nakamura, K.; Nishimura, R.; Perrin, E.; Seez, W.; Takubo, Y.; Takashima, R.; Terada, S.; Todome, K.; Unno, Y.; Weber, M.

2014-04-01

It is expected that after several years of data-taking, the Large Hadron Collider (LHC) physics programme will be extended to the so-called High-Luminosity LHC, where the instantaneous luminosity will be increased up to 5 × 1034 cm-2 s-1. For the general-purpose ATLAS experiment at the LHC, a complete replacement of its internal tracking detector will be necessary, as the existing detector will not provide the required performance due to the cumulated radiation damage and the increase in the detector occupancy. The baseline layout for the new ATLAS tracker is an all-silicon-based detector, with pixel sensors in the inner layers and silicon micro-strip detectors at intermediate and outer radii. The super-module (SM) is an integration concept proposed for the barrel strip region of the future ATLAS tracker, where double-sided stereo silicon micro-strip modules (DSM) are assembled into a low-mass local support (LS) structure. Mechanical aspects of the proposed LS structure are described.

The Loss Cone Imager (LCI)

DTIC Science & Technology

2006-07-24

at this time that the PMO provided the current LCI configuration (integrated DPU/HST on the PM, the RSH units on a composite tube , later to become...approximated by parallel planes of 1000 A of aluminum on a 0.5 mil mylar foil in front of a 1000 tim (or 1500 tim) silicon detector, detector A...above manufacturers form these alloys in tube form. In order to produce a tube , a rod would be formed and then a hold bored through the center. Some of

The Large Hadron Collider (LHC): The Energy Frontier

NASA Astrophysics Data System (ADS)

Brianti, Giorgio; Jenni, Peter

The following sections are included: * Introduction * Superconducting Magnets: Powerful, Precise, Plentiful * LHC Cryogenics: Quantum Fluids at Work * Current Leads: High Temperature Superconductors to the Fore * A Pumping Vacuum Chamber: Ultimate Simplicity * Vertex Detectors at LHC: In Search of Beauty * Large Silicon Trackers: Fast, Precise, Efficient * Two Approaches to High Resolution Electromagnetic Calorimetry * Multigap Resistive Plate Chamber: Chronometry of Particles * The LHCb RICH: The Lord of the Cherenkov Rings * Signal Processing: Taming the LHC Data Avalanche * Giant Magnets for Giant Detectors

Responsivity boosting in FIR TiN LEKIDs using phonon recycling: simulations and array design

NASA Astrophysics Data System (ADS)

Fyhrie, Adalyn; McKenney, Christopher; Glenn, Jason; LeDuc, Henry G.; Gao, Jiansong; Day, Peter; Zmuidzinas, Jonas

2016-07-01

To characterize further the cosmic star formation history at high redshifts, a large-area survey by a cryogenic 4-6 meter class telescope with a focal plane populated by tens of thousands of far-infrared (FIR, 30-300 μm) detectors with broadband detector noise equivalent powers (NEPs) on the order of 3×10-9 W/√ Hz is needed. Ideal detectors for such a surveyor do not yet exist. As a demonstration of one technique for approaching the ultra-low NEPs required by this surveyor, we present the design of an array of 96 350 µm KIDs that utilize phonon recycling to boost responsivity. Our KID array is fabricated with TiN deposited on a silicon-on-insulator (SOI) wafer, which is a 2 μm thick layer of silicon bonded to a thicker slab of silicon by a thin oxide layer. The backside thick slab is etched away underneath the absorbers so that the inductors are suspended on just the 2 μm membrane. The intent is that quasiparticle recombination phonons are trapped in the thin membrane, thereby increasing their likelihood of being re-absorbed by the KID to break additional Cooper pairs and boost responsivity. We also present a Monte-Carlo simulation that predicts the amount of signal boost expected from phonon recycling given different detector geometries and illumination strategies. For our current array geometry, the simulation predicts a measurable 50% boost in responsivity.

Studies of materials for future ground-based and space-based interferometric gravitational wave detectors

NASA Astrophysics Data System (ADS)

Reid, Stuart

Studies of materials for future ground-based and space-based interferometric gravitational wave detectors. In 1916 Einstein predicted the existence of gravitational waves as a consequence of his Theory of General Relativity. These can be considered as fluctuations in the curvature, or ripples, in space-time. Until now there has only been indirect evidence for their existence. However, many scientists around the world over many years have been developing ultra-sensitive measurement techniques that are expected to be capable of detecting these signals, with the hope of providing new information on the astrophysical processes and sources that produce them. Gravitational waves are quadrupolar in nature and therefore produce orthogonal stretching and squeezing (i.e. a strain) of space. These fluctuations in distance are very small with astrophysical events predicted to produce strains at the earth of the order of 10-22 in the audio frequency band. One method for detecting such a strain is based on a Michelson Interferometer. The Institute for Gravitational Research in the University of Glasgow, under the leadership of Prof. J. Hough and has been actively involved in the research targeted towards the detection of gravitational waves for around 35 years. A strong collaboration exists with the Albert Einstein Institute in Hanover and Golm, the University of Hanover and the University of Cardiff. This collaboration has built an interferometer with 600 m arms in Germany called GEO600. GEO600 is designed to operate in a range of 50 Hz to a few kHz, with strain sensitivities reaching the order of 10-22/√Hz in the range 50 Hz → a few kHz. The work within this thesis describes various experiments carried out on materials and techniques used in current detectors and for the proposed future detectors. The principal aim is to cover various methods for reducing the levels of mechanical loss associated with the detector's optics and thereby minimising the impact of thermal noise on overall detector sensitivity. Chapter 1 starts by explaining the nature of gravitational waves, the sources that are expected to give the largest signals and details the development of resonant bar and interferometric detectors. This is followed by a discussion in chapter two of one of the principal limits to detector sensitivity, that of thermal noise. The reduction of thermal noise in detectors is a major challenge and care has to be taken in the construction of the suspension systems of the interferometric detectors to minimise mechanical loss effects, which adversely affect thermal noise. A particular technology for jointing components was used for the construction of the monolithic suspensions of the German/UK GE0600 interferometric detector, resulting in improved suspension thermal noise performance over other methods. This involved the use of hydroxy-catalysis bonding. In Chapter 3 investigations into hydroxy-catalysis bonding are presented for determining the settling time dependence on hydroxide concentration and temperature. Quantifying these factors will help in the development of applications of this technology both in the area of future detectors and for space-based projects requiring precision optical sensing. Chapters 4 and 5 detail mechanical loss measurements on bulk mirror substrates for current and future interferometric detectors at room temperature. Fused silica, single-crystal sapphire and single-crystal silicon samples yielded values for the intrinic loss of φmat-silica = 2.8 x 10-8, φmat-sapphire = 4.6 X 10-9 and φmat-silicon = 9-6 X 10-9. The lowest loss values obtained for Heraeus Type 311 fused silica appear to agree well with the semi-empirical formula for loss developed by Steve Penn at al. The calculated level of substrate thermal noise in the GEO600 detector is presented using this model for mechanical loss and indicates the levels to be around a factor of ten lower than previously calculated. This knowledge further strengthens the case of fused silica as a substrate material for the next line of future detectors, such as Advanced LIGO. The low levels of internal loss in bulk silicon samples is also of interest due to the silicon's high thermal conductivity. This is relevant when considering third generation detectors, that is, beyond the Advanced LIGO design, where significant thermal loading is anticipated due to the increased levels of laser power required for improved shot noise performance.Another significant source of thermal noise in the optics of current interferometers arises from the mechanical loss associated with the applied optical coatings required for high reflectivity. Results presented in Chapter 4 show that the mechanical loss is predominantly associated with the tantala component of the silica-tantala coating, and that doping the tantala with titania can reduce the mechanical loss by a factor of approximately two. Silicon may also be a useful material for the construction of low mechanical loss suspension elements. Chapter 6 details measurements of 92mum thick silicon flexures for use as suspension elements which show the mechanical loss to reach φ(w) = 4.4 X 10-7 at 85 K. The various sources of loss are considered, both internal and external to the samples, and presented. The level of internal loss is consistent at higher temperatures with thermoelastic effects and at lower temperatures to be dominated by surface loss in addition to perhaps some other loss mechanism. The measurements in Chapters 5 and 6 suggest that silicon may be a suitable material for both mirrors and suspension elements.

Ultrahigh Responsivity-Bandwidth Product in a Compact InP Nanopillar Phototransistor Directly Grown on Silicon

NASA Astrophysics Data System (ADS)

Ko, Wai Son; Bhattacharya, Indrasen; Tran, Thai-Truong D.; Ng, Kar Wei; Adair Gerke, Stephen; Chang-Hasnain, Connie

2016-09-01

Highly sensitive and fast photodetectors can enable low power, high bandwidth on-chip optical interconnects for silicon integrated electronics. III-V compound semiconductor direct-bandgap materials with high absorption coefficients are particularly promising for photodetection in energy-efficient optical links because of the potential to scale down the absorber size, and the resulting capacitance and dark current, while maintaining high quantum efficiency. We demonstrate a compact bipolar junction phototransistor with a high current gain (53.6), bandwidth (7 GHz) and responsivity (9.5 A/W) using a single crystalline indium phosphide nanopillar directly grown on a silicon substrate. Transistor gain is obtained at sub-picowatt optical power and collector bias close to the CMOS line voltage. The quantum efficiency-bandwidth product of 105 GHz is the highest for photodetectors on silicon. The bipolar junction phototransistor combines the receiver front end circuit and absorber into a monolithic integrated device, eliminating the wire capacitance between the detector and first amplifier stage.

Ultrahigh Responsivity-Bandwidth Product in a Compact InP Nanopillar Phototransistor Directly Grown on Silicon

PubMed Central

Ko, Wai Son; Bhattacharya, Indrasen; Tran, Thai-Truong D.; Ng, Kar Wei; Adair Gerke, Stephen; Chang-Hasnain, Connie

2016-01-01

Highly sensitive and fast photodetectors can enable low power, high bandwidth on-chip optical interconnects for silicon integrated electronics. III-V compound semiconductor direct-bandgap materials with high absorption coefficients are particularly promising for photodetection in energy-efficient optical links because of the potential to scale down the absorber size, and the resulting capacitance and dark current, while maintaining high quantum efficiency. We demonstrate a compact bipolar junction phototransistor with a high current gain (53.6), bandwidth (7 GHz) and responsivity (9.5 A/W) using a single crystalline indium phosphide nanopillar directly grown on a silicon substrate. Transistor gain is obtained at sub-picowatt optical power and collector bias close to the CMOS line voltage. The quantum efficiency-bandwidth product of 105 GHz is the highest for photodetectors on silicon. The bipolar junction phototransistor combines the receiver front end circuit and absorber into a monolithic integrated device, eliminating the wire capacitance between the detector and first amplifier stage. PMID:27659796

Active Radiation Detectors for Use in Space Beyond Low Earth Orbit: Spatial and Energy Resolution Requirements and Methods for Heavy Ion Charge Classification

NASA Astrophysics Data System (ADS)

McBeth, Rafe A.

Space radiation exposure to astronauts will need to be carefully monitored on future missions beyond low earth orbit. NASA has proposed an updated radiation risk framework that takes into account a significant amount of radiobiological and heavy ion track structure information. These models require active radiation detection systems to measure the energy and ion charge Z. However, current radiation detection systems cannot meet these demands. The aim of this study was to investigate several topics that will help next generation detection systems meet the NASA objectives. Specifically, this work investigates the required spatial resolution to avoid coincident events in a detector, the effects of energy straggling and conversion of dose from silicon to water, and methods for ion identification (Z) using machine learning. The main results of this dissertation are as follows: 1. Spatial resolution on the order of 0.1 cm is required for active space radiation detectors to have high confidence in identifying individual particles, i.e., to eliminate coincident events. 2. Energy resolution of a detector system will be limited by energy straggling effects and the conversion of dose in silicon to dose in biological tissue (water). 3. Machine learning methods show strong promise for identification of ion charge (Z) with simple detector designs.

Characterization and Analysis of Integrated Silicon Photonic Detectors for High-Speed Communications

DTIC Science & Technology

2015-03-26

17 2.2.1.1 Depletion Region and Dark Current . . . . . . . . . . . . . . . . . 18 2.2.1.2 Photocurrent, Quantum ...facilitate a greater consciousness for the RF spectrum from MHz to ∼1 THz demonstrating an advantage over any purely electronic approach. Electronic... Quantum Efficiency and Responsivity. Extrapolating the established model from the dark current section provides the photodiode’s response when light

Large area silicon drift detectors for x-rays -- New results

DOE Office of Scientific and Technical Information (OSTI.GOV)

Iwanczyk, J.S.; Patt, B.E.; Tull, C.R.

Large area silicon drift detectors, consisting of 8 mm and 12 mm diameter hexagons, were fabricated on 0.35 mm thick high resistivity n-type silicon. An external FET and a low-noise charge sensitive preamplifier were used for testing the prototype detectors. The detector performance was measured in the range 75 to 25 C using Peltier cooling, and from 0.125 to 6 {micro}s amplifier shaping time. Measured energy resolutions were 159 eV FWHM and 263 eV FWHM for the 0.5 cm{sup 2} and 1 cm{sup 2} detectors, respectively (at 5.9 keV, {minus}75 C, 6 {micro}s shaping time). The uniformity of the detectormore » response over the entire active area (measured using 560 nm light) was < 0.5%.« less

Method of fabricating a PbS-PbSe IR detector array

NASA Technical Reports Server (NTRS)

Barrett, John R. (Inventor)

1987-01-01

A silicon wafer is provided which does not employ individually bonded leads between the IR sensitive elements and the input stages of multiplexers. The wafer is first coated with lead selenide in a first detector array area and is thereafter coated with lead sulfide within a second detector array area. The described steps result in the direct chemical deposition of lead selenide and lead sulfide upon the silicon wafer to eliminate individual wire bonding, bumping, flip chiping, planar interconnecting methods of connecting detector array elements to silicon chip circuitry, e.g., multiplexers, to enable easy fabrication of very long arrays. The electrode structure employed, produces an increase in the electrical field gradient between the electrodes for a given volume of detector material, relative to conventional electrode configurations.

MSM-Metal Semiconductor Metal Photo-detector Using Black Silicon Germanium (SiGe) for Extended Wavelength Near Infrared Detection

DTIC Science & Technology

2012-09-01

MSM) photodectors fabricated using black silicon-germanium on silicon substrate (Si1–xGex//Si) for I-V, optical response, external quantum ...material for Si for many applications in low-power and high-speed semiconductor device technologies (4, 5). It is a promising material for quantum well ...MSM-Metal Semiconductor Metal Photo-detector Using Black Silicon Germanium (SiGe) for Extended Wavelength Near Infrared Detection by Fred

Performance of a Commercial Silicon Drift Detector for X-ray Microanalysis

DOE Office of Scientific and Technical Information (OSTI.GOV)

Kenik, Edward A

2008-01-01

Silicon drift detectors (SDDs) are rapidly becoming the energy dispersive spectrometer of choice especially for scanning electron microscopy applications. The complementary features of large active areas (i.e., collection angle) and high count rate capability of these detector contribute to their popularity, as well as the absence of liquid nitrogen cooling of the detector. The performance of an EDAX Apollo 40 SDD on a JEOL 6500F SEM will be discussed.

High-precision X-ray spectroscopy of highly-charged ions at the experimental storage ring using silicon microcalorimeters

NASA Astrophysics Data System (ADS)

Scholz, Pascal A.; Andrianov, Victor; Echler, Artur; Egelhof, Peter; Kilbourne, Caroline; Kiselev, Oleg; Kraft-Bermuth, Saskia; McCammon, Dan

2017-10-01

X-ray spectroscopy on highly charged heavy ions provides a sensitive test of quantum electrodynamics in very strong Coulomb fields. One limitation of the current accuracy of such experiments is the energy resolution of available X-ray detectors for energies up to 100 keV. To improve this accuracy, a novel detector concept, namely the concept of microcalorimeters, is exploited for this kind of measurements. The microcalorimeters used in the present experiments consist of silicon thermometers, ensuring a high dynamic range, and of absorbers made of high-Z material to provide high X-ray absorption efficiency. Recently, besides an earlier used detector, a new compact detector design, housed in a new dry cryostat equipped with a pulse tube cooler, was applied at a test beamtime at the experimental storage ring (ESR) of the GSI facility in Darmstadt. A U89+ beam at 75 MeV/u and a 124Xe54+ beam at various beam energies, both interacting with an internal gas-jet target, were used in different cycles. This test was an important benchmark for designing a larger array with an improved lateral sensitivity and statistical accuracy.

Silicon Drift Detectors - A Novel Technology for Vertex Detectors

NASA Astrophysics Data System (ADS)

Lynn, D.

1996-10-01

Silicon Drift Detectors (SDD) are novel position sensing silicon detectors which operate in a manner analogous to gas drift detectors. Single SDD's were shown in the CERN NA45 experiment to permit excellent spatial resolution (< 10 μm), to handle large particle occupancy, and to require a small fraction of the number of electronic channels of an equivalent pixel detector. The Silicon Vertex Tracker (SVT) for the STAR experiment at RHIC is based on this new technology. The SVT will consist of 216 SDD's, each 6.3 cm by 6.3 cm, arranged in a three layer barrel design, covering 2 π in azimuth and ±1 in pseudo-rapidity. Over the last three years we undertook a concentrated R+D effort to optimize the performance of the detector by minimizing the inactive area, the operating voltage and the data volume. We will present test results from several wafer prototypes. The charge produced by the passage of ionizing particles through the bulk of the detectors is collected on segmented anodes, with a pitch of 250 μm, on the far edges of the detector. The anodes are wire-bonded to a thick film multi-chip module which contains preamplifier/shaper chips and CMOS based switched capacitor arrays used as an analog memory pipeline. The ADC is located off-detector. The complete readout chain from the wafer to the DAQ will be presented. Finally we will show physics performance simulations based on the resolution achieved by the SVT prototypes.

Micro-Fabricated Solid-State Radiation Detectors for Active Personal Dosimetry

NASA Technical Reports Server (NTRS)

Wrbanek, John D.; Wrbanek, Susan Y.; Fralick, Gustave C.; Chen, Liang-Yu

2007-01-01

Active radiation dosimetry is important to human health and equipment functionality for space applications outside the protective environment of a space station or vehicle. This is especially true for long duration missions to the moon, where the lack of a magnetic field offers no protection from space radiation to those on extravehicular activities. In order to improve functionality, durability and reliability of radiation dosimeters for future NASA lunar missions, single crystal silicon carbide devices and scintillating fiber detectors are currently being investigated for applications in advanced extravehicular systems. For many years, NASA Glenn Research Center has led significant efforts in silicon carbide semiconductor technology research and instrumentation research for sensor applications under extreme conditions. This report summarizes the technical progress and accomplishments toward characterization of radiation-sensing components for the recommendation of their fitness for advanced dosimetry development.

A MEMS Infrared Thermopile Fabricated from Silicon-On-Insulator with Phononic Crystal Structures and Carbon Nanotube Absorption Layer

NASA Astrophysics Data System (ADS)

Gray, Kory Forrest

The goal of this project was to examine the possibility of creating a novel thermal infrared detector based on silicon CMOS technology that has been enhanced by the latest nano-engineering discoveries. Silicon typically is not thought as an efficient thermoelectric material. However recent advancements in nanotechnology have improved the potential for a highly sensitive infrared detector based on nano-structured silicon. The thermal conductivity of silicon has been shown to be reduced from 150 W/mK down to 60 W/mK just by decreasing the scale of the silicon from bulk down to the sub-micron scale. Further reduction of the thermal conductivity has been shown by patterning silicon with a phonon crystal structure which has been reported to have thermal conductivities down to 10 W/mK. The phonon crystal structure consists of a 2D array of holes that are etched into the silicon. The size and pitch of the holes are on the order of the mean free path of the phonons in silicon which is approximately 200-500nm. This particular device had 200nm holes on a 400nm pitch. The Seebeck coefficient of silicon can also be enhanced by the reduction of the material from the bulk to sub-micron scale and with degenerate level doping. The combination of decreased thermal conductivity and increased Seebeck coefficient allow silicon to be a promising material for thermoelectric infrared detectors. The highly doped silicon is desired to reduce the electrical resistance of the device. The low electrical resistance is required to reduce the Johnson noise of the device which is the dominant noise source for most thermal detectors. This project designed a MEMS thermopile using a silicon-on-insulator substrate, and a CMOS compatible process. The basic thermopile consists of a silicon dioxide membrane with phononic crystal patterned silicon thermocouples around the edges of the membrane. Vertical aligned, multi-walled, carbon nanotubes were used as the infrared absorption layer. A MEMS thermoelectric detector with a D* of 3 * 107 cm Hz 0.5/W was demonstrated with a time response of 3-10 milliseconds. With this initial research, it is possible to improve the D* to the high 108 cm Hz 0.5/W range by slightly changing the design of the thermopile and patterning the absorption layer.

Extrinsic germanium Blocked Impurity Bank (BIB) detectors

NASA Technical Reports Server (NTRS)

Krabach, Timothy N.; Huffman, James E.; Watson, Dan M.

1989-01-01

Ge:Ga blocked-impurity-band (BIB) detectors with long wavelength thresholds greater than 190 microns and peak quantum efficiencies of 4 percent, at an operating temperature of 1.8 K, have been fabricated. These proof of concept devices consist of a high purity germanium blocking layer epitaxially grown on a Ga-doped Ge substrate. This demonstration of BIB behavior in germanium enables the development of far infrared detector arrays similar to the current silicon-based devices. Present efforts are focussed on improving the chemical vapor deposition process used to create the blocking layer and on the lithographic processing required to produce monolithic detector arrays in germanium. Approaches to test the impurity levels in both the blocking and active layers are considered.

Designing a Modern Low Cost Muon Detector to Teach Nuclear Physics

NASA Astrophysics Data System (ADS)

Press, Carly; Kotler, Julia

2016-09-01

In an effort to make it possible for small institutions to train students in nuclear physics, an attempt is made to design a low cost cosmic ray muon detector (perhaps under 600 dollars) capable of measuring flux vs. solid angle and muon lifetime. In order to expose students to current particle detection technologies, silicon photomultipliers will be coupled with plastic scintillator to provide the signals, and an Arduino, Raspberry Pi, or National Instruments device will interface with the detector. Once designed and built, prototypes of the detector will be used in outreach to K-12 students in the Allentown, PA area. This material is based upon work supported by the National Science Foundation under Grant No. 1507841.

Silicon diodes as an alternative to diamond detectors for depth dose curves and profile measurements of photon and electron radiation.

PubMed

Scherf, Christian; Peter, Christiane; Moog, Jussi; Licher, Jörg; Kara, Eugen; Zink, Klemens; Rödel, Claus; Ramm, Ulla

2009-08-01

Depth dose curves and lateral dose profiles should correspond to relative dose to water in any measured point, what can be more or less satisfied with different detectors. Diamond as detector material has similar dosimetric properties like water. Silicon diodes and ionization chambers are also commonly used to acquire dose profiles. The authors compared dose profiles measured in an MP3 water phantom with a diamond detector 60003, unshielded and shielded silicon diodes 60008 and 60012 and a 0.125-cm(3) thimble chamber 233642 (PTW, Freiburg, Germany) for 6- and 25-MV photons. Electron beams of 6, 12 and 18 MeV were investigated with the diamond detector, the unshielded diode and a Markus chamber 23343. The unshielded diode revealed relative dose differences at the water surface below +10% for 6-MV and +4% for 25-MV photons compared to the diamond data. These values decreased to less than 1% within the first millimeters of water depth. The shielded diode was only required to obtain correct data of the fall-off zones for photon beams larger than 10 x 10 cm(2) because of important contributions of low-energy scattered photons. For electron radiation the largest relative dose difference of -2% was observed with the unshielded silicon diode for 6 MeV within the build-up zone. Spatial resolutions were always best with the small voluminous silicon diodes. Relative dose profiles obtained with the two silicon diodes have the same degree of accuracy as with the diamond detector.

A micron resolution optical scanner for characterization of silicon detectors

DOE Office of Scientific and Technical Information (OSTI.GOV)

Shukla, R. A.; Dugad, S. R., E-mail: dugad@cern.ch; Gopal, A. V.

2014-02-15

The emergence of high position resolution (∼10 μm) silicon detectors in recent times have highlighted the urgent need for the development of new automated optical scanners of micron level resolution suited for characterizing microscopic features of these detectors. More specifically, for the newly developed silicon photo-multipliers (SiPM) that are compact, possessing excellent photon detection efficiency with gain comparable to photo-multiplier tube. In a short time, since their invention the SiPMs are already being widely used in several high-energy physics and astrophysics experiments as the photon readout element. The SiPM is a high quantum efficiency, multi-pixel photon counting detector with fastmore » timing and high gain. The presence of a wide variety of photo sensitive silicon detectors with high spatial resolution requires their performance evaluation to be carried out by photon beams of very compact spot size. We have designed a high resolution optical scanner that provides a monochromatic focused beam on a target plane. The transverse size of the beam was measured by the knife-edge method to be 1.7 μm at 1 − σ level. Since the beam size was an order of magnitude smaller than the typical feature size of silicon detectors, this optical scanner can be used for selective excitation of these detectors. The design and operational details of the optical scanner, high precision programmed movement of target plane (0.1 μm) integrated with general purpose data acquisition system developed for recording static and transient response photo sensitive silicon detector are reported in this paper. Entire functionality of scanner is validated by using it for selective excitation of individual pixels in a SiPM and identifying response of active and dead regions within SiPM. Results from these studies are presented in this paper.« less

A feasibility study of a data acquisition system for a silicon strip detector with a digital readout scheme

NASA Astrophysics Data System (ADS)

Ikeda, Hirokazu; Ikeda, Mitsuo; Inaba, Susumu; Tanaka, Manobu

1993-06-01

We describe a prototype data acquisition system for a silicon strip detector, which has been developed in terms of a digital readout scheme. The system consists of a master timing generator, readout controller, and a detector emulator card on which we use custom VLSI shift registers with operating clock frequency of 30 MHz.

Temperature distribution model for the semiconductor dew point detector

NASA Astrophysics Data System (ADS)

Weremczuk, Jerzy; Gniazdowski, Z.; Jachowicz, Ryszard; Lysko, Jan M.

2001-08-01

The simulation results of temperature distribution in the new type silicon dew point detector are presented in this paper. Calculations were done with use of the SMACEF simulation program. Fabricated structures, apart from the impedance detector used to the dew point detection, contained the resistive four terminal thermometer and two heaters. Two detector structures, the first one located on the silicon membrane and the second one placed on the bulk materials were compared in this paper.

Development of silicon detectors for Beam Loss Monitoring at HL-LHC

NASA Astrophysics Data System (ADS)

Verbitskaya, E.; Eremin, V.; Zabrodskii, A.; Bogdanov, A.; Shepelev, A.; Dehning, B.; Bartosik, M. R.; Alexopoulos, A.; Glaser, M.; Ravotti, F.; Sapinski, M.; Härkönen, J.; Egorov, N.; Galkin, A.

2017-03-01

Silicon detectors were proposed as novel Beam Loss Monitors (BLM) for the control of the radiation environment in the vicinity of the superconductive magnets of the High-Luminosity Large Hadron Collider. The present work is aimed at enhancing the BLM sensitivity and therefore the capability of triggering the beam abort system before a critical radiation load hits the superconductive coils. We report here the results of three in situ irradiation tests of Si detectors carried out at the CERN PS at 1.9-4.2 K. The main experimental result is that all silicon detectors survived irradiation up to 1.22× 1016 p/cm2. The third test, focused on the detailed characterization of the detectors with standard (300 μm) and reduced (100 μm) thicknesses, showed only a marginal difference in the sensitivity of thinned detectors in the entire fluence range and a smaller rate of signal degradation that promotes their use as BLMs. The irradiation campaigns produced new information on radiation damage and carrier transport in Si detectors irradiated at the temperatures of 1.9-4.2 K. The results were encouraging and permitted to initiate the production of the first BLM prototype modules which were installed at the end of the vessel containing the superconductive coil of a LHC magnet immersed in superfluid helium to be able to test the silicon detectors in real operational conditions.

A Broadband X-Ray Imaging Spectroscopy with High-Angular Resolution: the FORCE Mission

NASA Technical Reports Server (NTRS)

Mori, Koji; Tsuru, Takeshi Go; Nakazawac, Kazuhiro; Ueda, Yoshihiro; Okajima, Takashi; Murakami, Hiroshi; Awaki, Hisamitsu; Matsumoto, Hironori; Fukazawai, Yasushi; Tsunemi, Hiroshi;

A broadband x-ray imaging spectroscopy with high-angular resolution: the FORCE mission

NASA Astrophysics Data System (ADS)

Mori, Koji; Tsuru, Takeshi Go; Nakazawa, Kazuhiro; Ueda, Yoshihiro; Okajima, Takashi; Murakami, Hiroshi; Awaki, Hisamitsu; Matsumoto, Hironori; Fukazawa, Yasushi; Tsunemi, Hiroshi; Takahashi, Tadayuki; Zhang, William W.

2016-07-01

We are proposing FORCE (Focusing On Relativistic universe and Cosmic Evolution) as a future Japan-lead Xray observatory to be launched in the mid 2020s. Hitomi (ASTRO-H) possesses a suite of sensitive instruments enabling the highest energy-resolution spectroscopy in soft X-ray band, a broadband X-ray imaging spectroscopy in soft and hard X-ray bands, and further high energy coverage up to soft gamma-ray band. FORCE is the direct successor to the broadband X-ray imaging spectroscopy aspect of Hitomi (ASTRO-H) with significantly higher angular resolution. The current design of FORCE defines energy band pass of 1-80 keV with angular resolution of < 15 in half-power diameter, achieving a 10 times higher sensitivity above 10 keV compared to any previous missions with simultaneous soft X-ray coverage. Our primary scientific objective is to trace the cosmic formation history by searching for "missing black holes" in various mass-scales: "buried supermassive black holes (SMBHs)" (> 104 M⊙) residing in the center of galaxies in a cosmological distance, "intermediate-mass black holes" (102-104 M⊙) acting as the possible seeds from which SMBHs grow, and "orphan stellar-mass black holes" (< 102 M⊙) without companion in our Galaxy. In addition to these missing BHs, hunting for the nature of relativistic particles at various astrophysical shocks is also in our scope, utilizing the broadband X-ray coverage with high angular-resolution. FORCE are going to open a new era in these fields. The satellite is proposed to be launched with the Epsilon vehicle that is a Japanese current solid-fuel rocket. FORCE carries three identical pairs of Super-mirror and wide-band X-ray detector. The focal length is currently planned to be 10 m. The silicon mirror with multi-layer coating is our primary choice to achieve lightweight, good angular optics. The detector is a descendant of hard X-ray imager onboard Hitomi (ASTRO-H) replacing its silicon strip detector with SOI-CMOS silicon pixel detector, allowing an extension of the low energy threshold down to 1 keV or even less.

Array Technology for Terahertz Imaging

NASA Technical Reports Server (NTRS)

Reck, Theodore; Siles, Jose; Jung, Cecile; Gill, John; Lee, Choonsup; Chattopadhyay, Goutam; Mehdi, Imran; Cooper, Ken

2012-01-01

Heterodyne terahertz (0.3 - 3THz) imaging systems are currently limited to single or a low number of pixels. Drastic improvements in imaging sensitivity and speed can be achieved by replacing single pixel systems with an array of detectors. This paper presents an array topology that is being developed at the Jet Propulsion Laboratory based on the micromachining of silicon. This technique fabricates the array's package and waveguide components by plasma etching of silicon, resulting in devices with precision surpassing that of current metal machining techniques. Using silicon increases the versatility of the packaging, enabling a variety of orientations of circuitry within the device which increases circuit density and design options. The design of a two-pixel transceiver utilizing a stacked architecture is presented that achieves a pixel spacing of 10mm. By only allowing coupling from the top and bottom of the package the design can readily be arrayed in two dimensions with a spacing of 10mm x 18mm.

Large area silicon drift detectors for x-rays -- New results

DOE Office of Scientific and Technical Information (OSTI.GOV)

Iwanczyk, J.S.; Patt, B.E.; Tull, C.R.

Large area silicon drift detectors, consisting of 8 mm and 12 mm diameter hexagons, were fabricated on 0.35 mm thick high resistivity n-type silicon. An external FET and a low-noise charge sensitive preamplifier were used for testing the prototype detectors. The detector performance was measured in the range {minus}75 to 25 C using Peltier cooling, and from 0.125 to 6 {micro}s amplifier shaping time. Measured energy resolutions were 159 eV FWHM and 263 eV FWHM for the 0.5 cm{sup 2} and 1 cm{sup 2} detectors, respectively (at 5.9 keV, {minus}75 C, 6 {micro}s shaping time). The uniformity of the detectormore » response over the entire active area (measured using 560 nm light) was <0.5%.« less

Ground calibration of the Silicon Drift Detectors for NICER

NASA Astrophysics Data System (ADS)

LaMarr, Beverly; Prigozhin, Gregory; Remillard, Ronald; Malonis, Andrew; Gendreau, Keith C.; Arzoumanian, Zaven; Markwardt, Craig B.; Baumgartner, Wayne H.

2016-07-01

The Neutron star Interior Composition ExploreR (NICER) is set to be deployed on the International Space Station (ISS) in early 2017. It will use an array of 56 Silicon Drift Detectors (SDDs) to detect soft X-rays (0.2 - 12 keV) with 100 nanosecond timing resolution. Here we describe the effort to calibrate the detectors in the lab primarily using a Modulated X-ray Source (MXS). The MXS that was customized for NICER provides more than a dozen emission lines spread over the instrument bandwidth, providing calibration measurements for detector gain and spectral resolution. In addition, the fluorescence source in the MXS was pulsed at high frequency to enable measurement of the delay due to charge collection in the silicon and signal processing in the detector electronics. A second chamber, designed to illuminate detectors with either 55Fe, an optical LED, or neither, provided additional calibration of detector response, optical blocking, and effectiveness of background rejection techniques. The overall ground calibration achieved total operating time that was generally in the range of 500-1500 hours for each of the 56 detectors.

Ground Calibration of the Silicon Drift Detectors for NICER

NASA Technical Reports Server (NTRS)

Lamarr, Beverly; Prigozhin, Gregory; Remillard, Ronald; Malonis, Andrew; Gendreau, Keith C.; Arzoumanian, Zaven; Markwardt, Craig B.; Baumgartner, Wayne H.

2016-01-01

The Neutron star Interior Composition ExploreR (NICER) is set to be deployed on the International Space Station (ISS) in early 2017. It will use an array of 56 Silicon Drift Detectors (SDDs) to detect soft X-rays (0.2 - 12 keV) with 100 nanosecond timing resolution. Here we describe the e ort to calibrate the detectors in the lab primarily using a Modulated X-ray Source (MXS). The MXS that was customized for NICER provides more than a dozen emission lines spread over the instrument bandwidth, providing calibration measurements for detector gain and spectral resolution. In addition, the fluorescence source in the MXS was pulsed at high frequency to enable measurement of the delay due to charge collection in the silicon and signal processing in the detector electronics. A second chamber, designed to illuminate detectors with either 55Fe, an optical LED, or neither, provided additional calibration of detector response, optical blocking, and effectiveness of background rejection techniques. The overall ground calibration achieved total operating time that was generally in the range of 500-1500 hours for each of the 56 detectors.

Progress in the Development of CdTe and CdZnTe Semiconductor Radiation Detectors for Astrophysical and Medical Applications

PubMed Central

Sordo, Stefano Del; Abbene, Leonardo; Caroli, Ezio; Mancini, Anna Maria; Zappettini, Andrea; Ubertini, Pietro

2009-01-01

Over the last decade, cadmium telluride (CdTe) and cadmium zinc telluride (CdZnTe) wide band gap semiconductors have attracted increasing interest as X-ray and gamma ray detectors. Among the traditional high performance spectrometers based on silicon (Si) and germanium (Ge), CdTe and CdZnTe detectors show high detection efficiency and good room temperature performance and are well suited for the development of compact and reliable detection systems. In this paper, we review the current status of research in the development of CdTe and CdZnTe detectors by a comprehensive survey on the material properties, the device characteristics, the different techniques for improving the overall detector performance and some major applications. Astrophysical and medical applications are discussed, pointing out the ongoing Italian research activities on the development of these detectors. PMID:22412323

Stacked silicide/silicon mid- to long-wavelength infrared detector

NASA Technical Reports Server (NTRS)

Maserjian, Joseph (Inventor)

1990-01-01

The use of stacked Schottky barriers (16) with epitaxially grown thin silicides (10) combined with selective doping (22) of the barriers provides high quantum efficiency infrared detectors (30) at longer wavelengths that is compatible with existing silicon VLSI technology.

Stacked silicide/silicon mid- to long-wavelength infrared detector

DOEpatents

Maserjian, Joseph

1990-03-13

The use of stacked Schottky barriers (16) with epitaxially grown thin silicides (10) combined with selective doping (22) of the barriers provides high quantum efficiency infrared detectors (30) at longer wavelengths that is compatible with existing silicon VLSI technology.

Nuclear-Recoil Energy Scale in CDMS II Silicon Dark-Matter Detectors

DOE Office of Scientific and Technical Information (OSTI.GOV)

Agnese, R.; et al.

The Cryogenic Dark Matter Search (CDMS II) experiment aims to detect dark matter particles that elastically scatter from nuclei in semiconductor detectors. The resulting nuclear-recoil energy depositions are detected by ionization and phonon sensors. Neutrons produce a similar spectrum of low-energy nuclear recoils in such detectors, while most other backgrounds produce electron recoils. The absolute energy scale for nuclear recoils is necessary to interpret results correctly. The energy scale can be determined in CDMS II silicon detectors using neutrons incident from a broad-spectrummore » $$^{252}$$Cf source, taking advantage of a prominent resonance in the neutron elastic scattering cross section of silicon at a recoil (neutron) energy near 20 (182) keV. Results indicate that the phonon collection efficiency for nuclear recoils is $$4.8^{+0.7}_{-0.9}$$% lower than for electron recoils of the same energy. Comparisons of the ionization signals for nuclear recoils to those measured previously by other groups at higher electric fields indicate that the ionization collection efficiency for CDMS II silicon detectors operated at $$\\sim$$4 V/cm is consistent with 100% for nuclear recoils below 20 keV and gradually decreases for larger energies to $$\\sim$$75% at 100 keV. The impact of these measurements on previously published CDMS II silicon results is small.« less

Investigation of innovative silicon detector assembling solutions for hadron calorimeter modules.

NASA Astrophysics Data System (ADS)

Cai, G.; Ammannati, N.

1995-11-01

The application of large areas of silicon detector mosaics in calorimetry for high energy particles measurement in Physics has grown in the last few years and is still in progress. The high number of mosaic units in the calorimeter implies the following main requirements to be satisfied: a simple low cost for manufacturing and assembling easy mountable/dismountabic units possibility to move or change silicon detectors easily reliability of the electrical contacts between the aluminium layer on the silicon detectors surface and the PCB breaker points In order to satisfy the above requirements several assembling solutions have been investigated and tested recently, as fixed contact by using conducting epoxy-glues, mechanical-dismountable contacts of gold-plated PCB copper to the silicon detectors, and others. The results of the tests show a general degradation of the original electrical characteristics of the contacts after of varying lengths operating times. This fact, due to corrosion phenomena assisted by chemical residuals in the contact interface, causes an irreversible damage of the detectors in the long term. In addition we found a room temperature interdiffusion of gold and copper. A promising solution to these problems can be achieved by careful removal of chemical, increase of golden layer of the PCB electrical copper contacts or aluminising them by pure aluminium vapour deposition in vacuum chamber. The estimated degradation time between the PCB copper and the aluminium film is very low in this case, and the risk of diffusion in the detector aluminium film surface is low along the whole operating life of the calorimeter.

Fabrication of Compact Superconducting Lowpass Filters for Ultrasensitive Detectors

NASA Technical Reports Server (NTRS)

Brown, Ari; Chervenak, James; Chuss, David; Mikula, Vilem; Ray, Christopher; Rostem, Karwan; U-Yen, Kongpop; Wassell, Edward; Wollack, Edward

2012-01-01

It is extremely important for current and future far-infrared and sub-millimeter ultrasensitive detectors, which include transition edge sensors (TES) and microwave kinetic inductance detectors, to be adequately filtered from stray electromagnetic radiation in order to achieve their optimal performance. One means of filtering stray radiation is to block leakage associated with electrical connections in the detector environment. Here we discuss a fabrication methodology for realizing non-dissipative planar filters imbedded in the wall of the detector enclosure to limit wave propagation modes up to far-infrared frequencies. Our methodology consists of fabricating a boxed stripline transmission line, in which a superconducting (Nb, Mo, or Al) transmission line is encased in a silicon dioxide dielectric insulator coated with a metallic shell. We report on achieved attenuation and return loss and find that it replicates the simulated data to a high degree.

HgCdTe 256x256 NWIR FPA

NASA Technical Reports Server (NTRS)

Vural, Kadri; Blessinger, Michael; Chen, Jenkon; Kleinhans, William

1989-01-01

Researchers developed a HgCdTe 256x256 focal plane array (FPA) which operates in the 1 to 5 micron band. This is presently the largest demonstrated HgCdTe FPA. The detector material is HgCdTe on sapphire (PACE-1 technology) which has a low thermal expansion mismatch with silicon. The multiplexer is a CMOS FET-switch device processed through a commercial silicon foundry. The multiplexer input is direct injection and the charge capacity is about 2 times 10 to the 7th power electrons. The kTC limited read noise is 400 electrons. Researchers demonstrated high background imaging using the device. The broadband quantum efficiency is measured to be 59 percent. Dark currents less than 0.1 pA were measured at 77 K for detectors processed on PACE-1 material with 4.9 microns cutoff. The dark currents decrease as the temperature is lowered, and researchers are presently studying the T less than 77 K characteristics. The interconnect yield is greater than 95 percent. The devices are available for astronomical applications.

EROIC: a BiCMOS pseudo-gaussian shaping amplifier for high-resolution X-ray spectroscopy

NASA Astrophysics Data System (ADS)

Buzzetti, Siro; Guazzoni, Chiara; Longoni, Antonio

2003-10-01

We present the design and complete characterization of a fifth-order pseudo-gaussian shaping amplifier with 1 μs shaping time. The circuit is optimized for the read-out of signals coming from Silicon Drift Detectors for high-resolution X-ray spectroscopy. The novelty of the designed chip stands in the use of a current feedback loop to place the poles in the desired position on the s-plane. The amplifier has been designed in 0.8 μm BiCMOS technology and fully tested. The EROIC chip comprises also the peak stretcher, the peak detector, the output buffer to drive the external ADC and the pile-up rejection system. The circuit needs a single +5 V power supply and the dissipated power is 5 mW per channel. The digital outputs can be directly coupled to standard digital CMOS ICs. The measured integral-non-linearity of the whole chip is below 0.05% and the achieved energy resolution at the Mn Kα line detected by a 5 mm 2 Peltier-cooled Silicon Drift Detector is 167 eV FWHM.

Radiation damage effects on solid state detectors

NASA Technical Reports Server (NTRS)

Trainor, J. H.

1972-01-01

Totally depleted silicon diodes are discussed which are used as nuclear particle detectors in investigations of galactic and solar cosmic radiation and trapped radiation. A study of radiation and chemical effects on the diodes was conducted. Work on electron and proton irradiation of surface barrier detectors with thicknesses up to 1 mm was completed, and work on lithium-drifted silicon devices with thicknesses of several millimeters was begun.

On determining dead layer and detector thicknesses for a position-sensitive silicon detector

NASA Astrophysics Data System (ADS)

Manfredi, J.; Lee, Jenny; Lynch, W. G.; Niu, C. Y.; Tsang, M. B.; Anderson, C.; Barney, J.; Brown, K. W.; Chajecki, Z.; Chan, K. P.; Chen, G.; Estee, J.; Li, Z.; Pruitt, C.; Rogers, A. M.; Sanetullaev, A.; Setiawan, H.; Showalter, R.; Tsang, C. Y.; Winkelbauer, J. R.; Xiao, Z.; Xu, Z.

2018-04-01

In this work, two particular properties of the position-sensitive, thick silicon detectors (known as the "E" detectors) in the High Resolution Array (HiRA) are investigated: the thickness of the dead layer on the front of the detector, and the overall thickness of the detector itself. The dead layer thickness for each E detector in HiRA is extracted using a measurement of alpha particles emitted from a 212Pb pin source placed close to the detector surface. This procedure also allows for energy calibrations of the E detectors, which are otherwise inaccessible for alpha source calibration as each one is sandwiched between two other detectors. The E detector thickness is obtained from a combination of elastically scattered protons and an energy-loss calculation method. Results from these analyses agree with values provided by the manufacturer.

Proton irradiation of CVD diamond detectors for high-luminosity experiments at the LHC

NASA Astrophysics Data System (ADS)

Meier, D.; Adam, W.; Bauer, C.; Berdermann, E.; Bergonzo, P.; Bogani, F.; Borchi, E.; Bruzzi, M.; Colledani, C.; Conway, J.; Dabrowski, W.; Delpierre, P.; Deneuville, A.; Dulinski, W.; van Eijk, B.; Fallou, A.; Foulon, F.; Friedl, M.; Jany, C.; Gan, K. K.; Gheeraert, E.; Grigoriev, E.; Hallewell, G.; Hall-Wilton, R.; Han, S.; Hartjes, F.; Hrubec, J.; Husson, D.; Kagan, H.; Kania, D.; Kaplon, J.; Kass, R.; Knöpfle, K. T.; Krammer, M.; Manfredi, P. F.; Marshall, R. D.; Mishina, M.; Le Normand, F.; Pan, L. S.; Palmieri, V. G.; Pernegger, H.; Pernicka, M.; Peitz, A.; Pirollo, S.; Pretzl, K.; Re, V.; Riester, J. L.; Roe, S.; Roff, D.; Rudge, A.; Schnetzer, S.; Sciortino, S.; Speziali, V.; Stelzer, H.; Stone, R.; Tapper, R. J.; Tesarek, R.; Thomson, G. B.; Trawick, M.; Trischuk, W.; Turchetta, R.; Walsh, A. M.; Wedenig, R.; Weilhammer, P.; Ziock, H.; Zoeller, M.; RD42 Collaboration

1999-04-01

CVD diamond shows promising properties for use as a position-sensitive detector for experiments in the highest radiation areas at the Large Hadron Collider. In order to study the radiation hardness of diamond we exposed CVD diamond detector samples to 24 Gev/ c and 500 Mev protons up to a fluence of 5×10 15 p/cm 2. We measured the charge collection distance, the average distance electron-hole pairs move apart in an external electric field, and leakage currents before, during, and after irradiation. The charge collection distance remains unchanged up to 1×10 15 p/cm 2 and decreases by ≈40% at 5×10 15 p/cm 2. Leakage currents of diamond samples were below 1 pA before and after irradiation. The particle-induced currents during irradiation correlate well with the proton flux. In contrast to diamond, a silicon diode, which was irradiated for comparison, shows the known large increase in leakage current. We conclude that CVD diamond detectors are radiation hard to 24 GeV/ c and 500 MeV protons up to at least 1×10 15p/cm 2 without signal loss.

Semiconductor radiation detector with internal gain

DOE Office of Scientific and Technical Information (OSTI.GOV)

Iwanczyk, Jan; Patt, Bradley E.; Vilkelis, Gintas

An avalanche drift photodetector (ADP) incorporates extremely low capacitance of a silicon drift photodetector (SDP) and internal gain that mitigates the surface leakage current noise of an avalanche photodetector (APD). The ADP can be coupled with scintillators such as CsI(Tl), NaI(Tl), LSO or others to form large volume scintillation type gamma ray detectors for gamma ray spectroscopy, photon counting, gamma ray counting, etc. Arrays of the ADPs can be used to replace the photomultiplier tubes (PMTs) used in conjunction with scintillation crystals in conventional gamma cameras for nuclear medical imaging.

Evidence for Coincident Fusion Products Using Silicon Surface-barrier Detectors

NASA Astrophysics Data System (ADS)

Jones, Steven; Scott, Mark; Keeney, Frank

2002-10-01

We report experimental results showing coincident proton and triton production from the reaction: d + d --> t (1.01 MeV) + p (3.02 MeV). Partially-deuterided thin titanium foils were positioned between two silicon surface-barrier detectors which were mounted in a small cylindrical vacuum chamber which also served as a Faraday cage. We performed Monte Carlo studies using the SRIM code to determine the expected energies of arriving particles after they exit the host foil. The dual-coincidence requirement reduces background to very low levels so that low yields from very thin TiD foils can be readily detected. In one sequence of experiments, we observed 74 foreground coincidences in the regions of interest compared with 24 background counts; the statistical significance is approximately ten standard deviations. A striking advance is that the repeatability from the dual-coincidence experiments is currently greater than 70%.

Geometry Survey of the Time-of-Flight Neutron-Elastic Scattering (Antonella) Experiment

DOE Office of Scientific and Technical Information (OSTI.GOV)

Oshinowo, Babatunde O.; Izraelevitch, Federico

The Antonella experiment is a measurement of the ionization efficiency of nuclear recoils in silicon at low energies [1]. It is a neutron elastic scattering experiment motivated by the search for dark matter particles. In this experiment, a proton beam hits a lithium target and neutrons are produced. The neutron shower passes through a collimator that produces a neutron beam. The beam illuminates a silicon detector. With a certain probability, a neutron interacts with a silicon nucleus of the detector producing elastic scattering. After the interaction, a fraction of the neutron energy is transferred to the silicon nucleus which acquiresmore » kinetic energy and recoils. This kinetic energy is then dissipated in the detector producing ionization and thermal energy. The ionization produced is measured with the silicon detector electronics. On the other hand, the neutron is scattered out of the beam. A neutron-detector array (made of scintillator bars) registers the neutron arrival time and the scattering angle to reconstruct the kinematics of the neutron-nucleus interaction with the time-of-flight technique [2]. In the reconstruction equations, the energy of the nuclear recoil is a function of the scattering angle with respect to the beam direction, the time-of-flight of the neutron and the geometric distances between components of the setup (neutron-production target, silicon detector, scintillator bars). This paper summarizes the survey of the different components of the experiment that made possible the off-line analysis of the collected data. Measurements were made with the API Radian Laser Tracker and I-360 Probe Wireless. The survey was completed at the University of Notre Dame, Indiana, USA in February 2015.« less

Micromachined Thermoelectric Sensors and Arrays and Process for Producing

NASA Technical Reports Server (NTRS)

Foote, Marc C. (Inventor); Jones, Eric W. (Inventor); Caillat, Thierry (Inventor)

2000-01-01

Linear arrays with up to 63 micromachined thermopile infrared detectors on silicon substrates have been constructed and tested. Each detector consists of a suspended silicon nitride membrane with 11 thermocouples of sputtered Bi-Te and Bi-Sb-Te thermoelectric elements films. At room temperature and under vacuum these detectors exhibit response times of 99 ms, zero frequency D* values of 1.4 x 10(exp 9) cmHz(exp 1/2)/W and responsivity values of 1100 V/W when viewing a 1000 K blackbody source. The only measured source of noise above 20 mHz is Johnson noise from the detector resistance. These results represent the best performance reported to date for an array of thermopile detectors. The arrays are well suited for uncooled dispersive point spectrometers. In another embodiment, also with Bi-Te and Bi-Sb-Te thermoelectric materials on micromachined silicon nitride membranes, detector arrays have been produced with D* values as high as 2.2 x 10(exp 9) cm Hz(exp 1/2)/W for 83 ms response times.

Electrical production testing of the D0 Silicon microstrip tracker detector modules

DOE Office of Scientific and Technical Information (OSTI.GOV)

D0, SMT Production Testing Group; /Fermilab

The D0 Silicon Microstrip Tracker (SMT) is the innermost system of the D0 detector in Run 2. It consists of 912 detector units, corresponding to 5 different types of assemblies, which add up to a system with 792,576 readout channels. The task entrusted to the Production Testing group was to thoroughly debug, test and grade each detector module before its installation in the tracker. This note describes the production testing sequence and the procedures by which the detector modules were electrically tested and characterized at the various stages of their assembly.

X-ray detectors in medical imaging

NASA Astrophysics Data System (ADS)

Spahn, Martin

2013-12-01

Healthcare systems are subject to continuous adaptation, following trends such as the change of demographic structures, the rise of life-style related and chronic diseases, and the need for efficient and outcome-oriented procedures. This also influences the design of new imaging systems as well as their components. The applications of X-ray imaging in the medical field are manifold and have led to dedicated modalities supporting specific imaging requirements, for example in computed tomography (CT), radiography, angiography, surgery or mammography, delivering projection or volumetric imaging data. Depending on the clinical needs, some X-ray systems enable diagnostic imaging while others support interventional procedures. X-ray detector design requirements for the different medical applications can vary strongly with respect to size and shape, spatial resolution, frame rates and X-ray flux, among others. Today, integrating X-ray detectors are in common use. They are predominantly based on scintillators (e.g. CsI or Gd2O2S) and arrays of photodiodes made from crystalline silicon (Si) or amorphous silicon (a-Si) or they employ semiconductors (e.g. Se) with active a-Si readout matrices. Ongoing and future developments of X-ray detectors will include optimization of current state-of-the-art integrating detectors in terms of performance and cost, will enable the usage of large size CMOS-based detectors, and may facilitate photon counting techniques with the potential to further enhance performance characteristics and foster the prospect of new clinical applications.

Fabrication of Pop-up Detector Arrays on Si Wafers

NASA Technical Reports Server (NTRS)

Li, Mary J.; Allen, Christine A.; Gordon, Scott A.; Kuhn, Jonathan L.; Mott, David B.; Stahle, Caroline K.; Wang, Liqin L.

1999-01-01

High sensitivity is a basic requirement for a new generation of thermal detectors. To meet the requirement, close-packed, two-dimensional silicon detector arrays have been developed in NASA Goddard Space Flight Center. The goal of the task is to fabricate detector arrays configured with thermal detectors such as infrared bolometers and x-ray calorimeters to use in space fliGht missions. This paper focuses on the fabrication and the mechanical testing of detector arrays in a 0.2 mm pixel size, the smallest pop-up detectors being developed so far. These array structures, nicknamed "PUDS" for "Pop-Up Detectors", are fabricated on I pm thick, single-crystal, silicon membranes. Their designs have been refined so we can utilize the flexibility of thin silicon films by actually folding the silicon membranes to 90 degrees in order to obtain close-packed two-dimensional arrays. The PUD elements consist of a detector platform and two legs for mechanical support while also serving as electrical and thermal paths. Torsion bars and cantilevers connecting the detector platform to the legs provide additional flexures for strain relief. Using micro-electromechanical structure (MEMS) fabrication techniques, including photolithography, anisotropic chemical etching, reactive-ion etching, and laser dicing, we have fabricated PLTD detector arrays of fourteen designs with a variation of four parameters including cantilever length, torsion bar length and width, and leg length. Folding tests were conducted to test mechanical stress distribution for the array structures. We obtained folding yields and selected optimum design parameters to reach minimal stress levels. Computer simulation was also employed to verify mechanical behaviors of PUDs in the folding process. In addition, scanning electron microscopy was utilized to examine the flatness of detectors and the alignment of detector pixels in arrays. The fabrication of thermistors and heaters on the pop-up detectors is under way, preparing us for the next step of the experiment, the thermal test.

Analysis of photogenerated random telegraph signal in single electron detector (photo-SET).

PubMed

Troudi, M; Sghaier, Na; Kalboussi, A; Souifi, A

2010-01-04

In this paper, we analyzed slow single traps, situated inside the tunnel oxide of small area single electron photo-detector (photo-SET or nanopixel). The relationship between excitation signal (photons) and random-telegraph-signal (RTS) was evidenced. We demonstrated that photoinduced RTS observed on a photo-detector is due to the interaction between single photogenerated charges that tunnel from dot to dot and current path. Based on RTS analysis for various temperatures, gate bias and optical power we determined the characteristics of these single photogenerated traps: the energy position within the silicon bandgap, capture cross section and the position within the Si/SiO(x = 1.5) interfaces.

Characterization of silicon carbide and diamond detectors for neutron applications

NASA Astrophysics Data System (ADS)

Hodgson, M.; Lohstroh, A.; Sellin, P.; Thomas, D.

2017-10-01

The presence of carbon atoms in silicon carbide and diamond makes these materials ideal candidates for direct fast neutron detectors. Furthermore the low atomic number, strong covalent bonds, high displacement energies, wide bandgap and low intrinsic carrier concentrations make these semiconductor detectors potentially suitable for applications where rugged, high-temperature, low-gamma-sensitivity detectors are required, such as active interrogation, electronic personal neutron dosimetry and harsh environment detectors. A thorough direct performance comparison of the detection capabilities of semi-insulating silicon carbide (SiC-SI), single crystal diamond (D-SC), polycrystalline diamond (D-PC) and a self-biased epitaxial silicon carbide (SiC-EP) detector has been conducted and benchmarked against a commercial silicon PIN (Si-PIN) diode, in a wide range of alpha (Am-241), beta (Sr/Y-90), ionizing photon (65 keV to 1332 keV) and neutron radiation fields (including 1.2 MeV to 16.5 MeV mono-energetic neutrons, as well as neutrons from AmBe and Cf-252 sources). All detectors were shown to be able to directly detect and distinguish both the different radiation types and energies by using a simple energy threshold discrimination method. The SiC devices demonstrated the best neutron energy discrimination ratio (E\\max (n=5 MeV)/E\\max (n=1 MeV)  ≈5), whereas a superior neutron/photon cross-sensitivity ratio was observed in the D-PC detector (E\\max (AmBe)/E\\max (Co-60)  ≈16). Further work also demonstrated that the cross-sensitivity ratios can be improved through use of a simple proton-recoil conversion layer. Stability issues were also observed in the D-SC, D-PC and SiC-SI detectors while under irradiation, namely a change of energy peak position and/or count rate with time (often referred to as the polarization effect). This phenomenon within the detectors was non-debilitating over the time period tested (> 5 h) and, as such, stable operation was possible. Furthermore, the D-SC, self-biased SiC-EP and semi-insulating SiC detectors were shown to operate over the temperature range -60 °C to +100 °C.

SiC-based Photo-detectors for UV, VUV, EUV and Soft X-ray Detection

NASA Technical Reports Server (NTRS)

Yan, Feng

2006-01-01

A viewgraph presentation describing an ideal Silicon Carbide detector for ultraviolet, vacuum ultraviolet, extreme ultraviolet and soft x-ray detection is shown. The topics include: 1) An ideal photo-detector; 2) Dark current density of SiC photodiodes at room temperature; 3) Dark current in SiC detectors; 4) Resistive and capacitive feedback trans-impedance amplifier; 5) Avalanche gain; 6) Excess noise; 7) SNR in single photon counting mode; 8) Structure of SiC single photon counting APD and testing structure; 9) Single photon counting waveform and testing circuit; 10) Amplitude of SiC single photon counter; 11) Dark count of SiC APD photon counters; 12) Temperature-dependence of dark count rate; 13) Reduce the dark count rate by reducing the breakdown electric field; 14) Spectrum range for SiC detectors; 15) QE curves of Pt/4H-SiC photodiodes; 16) QE curve of SiC; 17) QE curves of SiC photodiode vs. penetration depth; 18) Visible rejection of SiC photodiodes; 19) Advantages of SiC photodiodes; 20) Competitors of SiC detectors; 21) Extraterrestrial solar spectra; 22) Visible-blind EUV detection; 23) Terrestrial solar spectra; and 24) Less than 1KeV soft x-ray detection.

Full characterization of laser-accelerated ion beams using Faraday cup, silicon carbide, and single-crystal diamond detectors

NASA Astrophysics Data System (ADS)

Margarone, D.; Krása, J.; Giuffrida, L.; Picciotto, A.; Torrisi, L.; Nowak, T.; Musumeci, P.; Velyhan, A.; Prokůpek, J.; Láska, L.; Mocek, T.; Ullschmied, J.; Rus, B.

2011-05-01

Multi-MeV beams of light ions have been produced using the 300 picosecond, kJ-class iodine laser, operating at the Prague Asterix Laser System facility in Prague. Real-time ion diagnostics have been performed by the use of various time-of-flight (TOF) detectors: ion collectors (ICs) with and without absorber thin films, new prototypes of single-crystal diamond and silicon carbide detectors, and an electrostatic ion mass spectrometer (IEA). In order to suppress the long photopeak induced by soft X-rays and to avoid the overlap with the signal from ultrafast particles, the ICs have been shielded with Al foil filters. The application of large-bandgap semiconductor detectors (>3 eV) ensured cutting of the plasma-emitted visible and soft-UV radiation and enhancing the sensitivity to the very fast proton/ion beams. Employing the IEA spectrometer, various ion species and charge states in the expanding laser-plasma have been determined. Processing of the experimental data based on the TOF technique, including estimation of the plasma fast proton maximum and peak energy, ion beam currents and total charge, total number of fast protons, as well as deconvolution processes, ion stopping power, and ion/photon transmission calculations for the different metallic filters used, are reported.

Development of a Compton camera for medical applications based on silicon strip and scintillation detectors

NASA Astrophysics Data System (ADS)

Krimmer, J.; Ley, J.-L.; Abellan, C.; Cachemiche, J.-P.; Caponetto, L.; Chen, X.; Dahoumane, M.; Dauvergne, D.; Freud, N.; Joly, B.; Lambert, D.; Lestand, L.; Létang, J. M.; Magne, M.; Mathez, H.; Maxim, V.; Montarou, G.; Morel, C.; Pinto, M.; Ray, C.; Reithinger, V.; Testa, E.; Zoccarato, Y.

2015-07-01

A Compton camera is being developed for the purpose of ion-range monitoring during hadrontherapy via the detection of prompt-gamma rays. The system consists of a scintillating fiber beam tagging hodoscope, a stack of double sided silicon strip detectors (90×90×2 mm3, 2×64 strips) as scatter detectors, as well as bismuth germanate (BGO) scintillation detectors (38×35×30 mm3, 100 blocks) as absorbers. The individual components will be described, together with the status of their characterization.

Exploration of maximum count rate capabilities for large-area photon counting arrays based on polycrystalline silicon thin-film transistors

NASA Astrophysics Data System (ADS)

Liang, Albert K.; Koniczek, Martin; Antonuk, Larry E.; El-Mohri, Youcef; Zhao, Qihua

2016-03-01

Pixelated photon counting detectors with energy discrimination capabilities are of increasing clinical interest for x-ray imaging. Such detectors, presently in clinical use for mammography and under development for breast tomosynthesis and spectral CT, usually employ in-pixel circuits based on crystalline silicon - a semiconductor material that is generally not well-suited for economic manufacture of large-area devices. One interesting alternative semiconductor is polycrystalline silicon (poly-Si), a thin-film technology capable of creating very large-area, monolithic devices. Similar to crystalline silicon, poly-Si allows implementation of the type of fast, complex, in-pixel circuitry required for photon counting - operating at processing speeds that are not possible with amorphous silicon (the material currently used for large-area, active matrix, flat-panel imagers). The pixel circuits of two-dimensional photon counting arrays are generally comprised of four stages: amplifier, comparator, clock generator and counter. The analog front-end (in particular, the amplifier) strongly influences performance and is therefore of interest to study. In this paper, the relationship between incident and output count rate of the analog front-end is explored under diagnostic imaging conditions for a promising poly-Si based design. The input to the amplifier is modeled in the time domain assuming a realistic input x-ray spectrum. Simulations of circuits based on poly-Si thin-film transistors are used to determine the resulting output count rate as a function of input count rate, energy discrimination threshold and operating conditions.

The Silicon Tracking System of the CBM Experiment at FAIR

NASA Astrophysics Data System (ADS)

Heuser, Johann M.

The Compressed Baryonic Matter (CBM) experiment at FAIR will conduct a systematic research program to explore the phase diagram of strongly interacting matter at highest net baryon densities and moderate temperatures. These conditions are to be created in collisions of heavy-ion beams with nuclear targets in the projectile beam energy range of 2 to 45 GeV/nucleon, initially coming from the SIS 100 synchrotron (up to 14 GeV/nucleon) and in a next step from SIS 300 enabling studies at the highest net baryon densities. Collision rates up to 107 per second are required to produce very rare probes with unprecedented statistics in this energy range. Their signatures are complex. These conditions call for detector systems designed to meet the extreme requirements in terms of rate capability, momentum and spatial resolution, and a novel data acquisition and trigger concept which is not limited by latency but by throughput. In the paper we describe the concept and development status of CBM's central detector, the Silicon Tracking System (STS). The detector realizes a large, highly granular and redundant detector system with fast read-out, and lays specific emphasis on low material budget in its physics aperture to achieve for charged particle tracks a momentum resolution of δp/p ≈ 1% at p > 1 GeV/c, at >95% track reconstruction efficiency. The detector employs 1220 highly segmented double-sided silicon micro-strip sensors of 300 µm thickness, mounted into 896 modular structures of various types that are aggregated on 106 low-mass carbon fiber ladders of different sizes that build up the tracking stations. The read-out electronics with its supply and cooling infrastructure is arranged at the periphery of the ladders, and provides a total channel count of 1.8 million. The signal transmission from the silicon sensors to the electronics is realized through ultra-thin multi-line aluminum-polyimide cables of up to half a meter length. The electronics generates a free-streaming data flow of digitized time-stamped detector information that is sent via data aggregation boards to the first-level event selector, a computing farm for on-line event reconstruction. The power dissipated by the detector's read-out electronics, amounting to about 2 times 20 kW in two layers at the top and bottom of the detector, will be removed by a particularly efficient and space-saving bi-phase CO2 cooling. The system integration of the detector takes respect of operating the sensors in a thermal enclosure at -5 °C, to limit leakage currents originating from radiation damage, and allows for maintenance to the detector components, in particular the sensors, if they should exceed an exposure to more than 1014 1 MeV neq/cm2. The detector system is developed and built by a CBM project team comprising institutes from Germany, Russia, Poland and Ukraine.

Microfabricated electrochemiluminescence cell for chemical reaction detection

DOEpatents

Northrup, M. Allen; Hsueh, Yun-Tai; Smith, Rosemary L.

2003-01-01

A detector cell for a silicon-based or non-silicon-based sleeve type chemical reaction chamber that combines heaters, such as doped polysilicon for heating, and bulk silicon for convection cooling. The detector cell is an electrochemiluminescence cell constructed of layers of silicon with a cover layer of glass, with spaced electrodes located intermediate various layers forming the cell. The cell includes a cavity formed therein and fluid inlets for directing reaction fluid therein. The reaction chamber and detector cell may be utilized in any chemical reaction system for synthesis or processing of organic, inorganic, or biochemical reactions, such as the polymerase chain reaction (PCR) and/or other DNA reactions, such as the ligase chain reaction, which are examples of a synthetic, thermal-cycling-based reaction. The ECL cell may also be used in synthesis instruments, particularly those for DNA amplification and synthesis.

Development of a thin scintillation films fission-fragment detector and a novel neutron source

NASA Astrophysics Data System (ADS)

Rusev, G.; Jandel, M.; Baramsai, B.; Bond, E. M.; Bredeweg, T. A.; Couture, A.; Daum, J. K.; Favalli, A.; Ianakiev, K. D.; Iliev, M. L.; Mosby, S.; Roman, A. R.; Springs, R. K.; Ullmann, J. L.; Walker, C. L.

2015-08-01

Investigation of prompt fission and neutron-capture Υ rays from fissile actinide samples at the Detector for Advanced Neutron Capture Experiments (DANCE) requires use of a fission-fragment detector to provide a trigger or a veto signal. A fission-fragment detector based on thin scintillating films and silicon photomultipliers has been built to serve as a trigger/veto detector in neutron-induced fission measurements at DANCE. The fissile material is surrounded by scintillating films providing a 4π detection of the fission fragments. The scintillations were registered with silicon photomultipliers. A measurement of the 235U(n,f) reaction with this detector at DANCE revealed a correct time-of-flight spectrum and provided an estimate for the efficiency of the prototype detector of 11.6(7)%. Design and test measurements with the detector are described. A neutron source with fast timing has been built to help with detector-response measurements. The source is based on the neutron emission from the spontaneous fission of 252Cf and the same type of scintillating films and silicon photomultipliers. Overall time resolution of the source is 0.3 ns. Design of the source and test measurements with it are described. An example application of the source for determining the neutron/gamma pulse-shape discrimination by a stilbene crystal is given.

Projected sensitivity of the SuperCDMS SNOLAB experiment

DOE PAGES

Agnese, R.; Anderson, A. J.; Aramaki, T.; ...

2017-04-07

SuperCDMS SNOLAB will be a next-generation experiment aimed at directly detecting low-mass particles (with masses ≤10 GeV/c 2) that may constitute dark matter by using cryogenic detectors of two types (HV and iZIP) and two target materials (germanium and silicon). The experiment is being designed with an initial sensitivity to nuclear recoil cross sections ~1×10 –43 cm 2 for a dark matter particle mass of 1 GeV/c 2, and with capacity to continue exploration to both smaller masses and better sensitivities. The phonon sensitivity of the HV detectors will be sufficient to detect nuclear recoils from sub-GeV dark matter. Amore » detailed calibration of the detector response to low-energy recoils will be needed to optimize running conditions of the HV detectors and to interpret their data for dark matter searches. Low-activity shielding, and the depth of SNOLAB, will reduce most backgrounds, but cosmogenically produced 3H and naturally occurring 32Si will be present in the detectors at some level. Even if these backgrounds are 10 times higher than expected, the science reach of the HV detectors would be over 3 orders of magnitude beyond current results for a dark matter mass of 1 GeV/c 2. The iZIP detectors are relatively insensitive to variations in detector response and backgrounds, and will provide better sensitivity for dark matter particles with masses ≳5 GeV/c 2. The mix of detector types (HV and iZIP), and targets (germanium and silicon), planned for the experiment, as well as flexibility in how the detectors are operated, will allow us to maximize the low-mass reach, and understand the backgrounds that the experiment will encounter. In conclusion, upgrades to the experiment, perhaps with a variety of ultra-low-background cryogenic detectors, will extend dark matter sensitivity down to the “neutrino floor,” where coherent scatters of solar neutrinos become a limiting background.« less

DOE Office of Scientific and Technical Information (OSTI.GOV)

Agnese, R.; Anderson, A. J.; Aramaki, T.

SuperCDMS SNOLAB will be a next-generation experiment aimed at directly detecting low-mass (< 10 GeV/cmore » $^2$) particles that may constitute dark matter by using cryogenic detectors of two types (HV and iZIP) and two target materials (germanium and silicon). The experiment is being designed with an initial sensitivity to nuclear recoil cross sections ~ 1 x 10$$^{-43}$$ cm$^2$ for a dark matter particle mass of 1 GeV/c$^2$, and with capacity to continue exploration to both smaller masses and better sensitivities. The phonon sensitivity of the HV detectors will be sufficient to detect nuclear recoils from sub-GeV dark matter. A detailed calibration of the detector response to low energy recoils will be needed to optimize running conditions of the HV detectors and to interpret their data for dark matter searches. Low-activity shielding, and the depth of SNOLAB, will reduce most backgrounds, but cosmogenically produced $$^{3}$$H and naturally occurring $$^{32}$$Si will be present in the detectors at some level. Even if these backgrounds are x10 higher than expected, the science reach of the HV detectors would be over three orders of magnitude beyond current results for a dark matter mass of 1 GeV/c$^2$. The iZIP detectors are relatively insensitive to variations in detector response and backgrounds, and will provide better sensitivity for dark matter particle masses (> 5 GeV/c$^2$). The mix of detector types (HV and iZIP), and targets (germanium and silicon), planned for the experiment, as well as flexibility in how the detectors are operated, will allow us to maximize the low-mass reach, and understand the backgrounds that the experiment will encounter. Upgrades to the experiment, perhaps with a variety of ultra-low-background cryogenic detectors, will extend dark matter sensitivity down to the "neutrino floor", where coherent scatters of solar neutrinos become a limiting background.« less

DOE Office of Scientific and Technical Information (OSTI.GOV)

Agnese, R.; Anderson, A. J.; Aramaki, T.

SuperCDMS SNOLAB will be a next-generation experiment aimed at directly detecting low-mass particles (with masses ≤ 10 GeV/c^2) that may constitute dark matter by using cryogenic detectors of two types (HV and iZIP) and two target materials (germanium and silicon). The experiment is being designed with an initial sensitivity to nuclear recoil cross sections ~1×10^-43 cm^2 for a dark matter particle mass of 1 GeV/c^2, and with capacity to continue exploration to both smaller masses and better sensitivities. The phonon sensitivity of the HV detectors will be sufficient to detect nuclear recoils from sub-GeV dark matter. A detailed calibration ofmore » the detector response to low-energy recoils will be needed to optimize running conditions of the HV detectors and to interpret their data for dark matter searches. Low-activity shielding, and the depth of SNOLAB, will reduce most backgrounds, but cosmogenically produced H-3 and naturally occurring Si-32 will be present in the detectors at some level. Even if these backgrounds are 10 times higher than expected, the science reach of the HV detectors would be over 3 orders of magnitude beyond current results for a dark matter mass of 1 GeV/c^2. The iZIP detectors are relatively insensitive to variations in detector response and backgrounds, and will provide better sensitivity for dark matter particles with masses ≳5 GeV/c^2. The mix of detector types (HV and iZIP), and targets (germanium and silicon), planned for the experiment, as well as flexibility in how the detectors are operated, will allow us to maximize the low-mass reach, and understand the backgrounds that the experiment will encounter. Upgrades to the experiment, perhaps with a variety of ultra-low-background cryogenic detectors, will extend dark matter sensitivity down to the “neutrino floor,” where coherent scatters of solar neutrinos become a limiting background.« less

DOE Office of Scientific and Technical Information (OSTI.GOV)

Agnese, R.; Anderson, A. J.; Aramaki, T.

SuperCDMS SNOLAB will be a next-generation experiment aimed at directly detecting low-mass particles (with masses ≤10 GeV/c 2) that may constitute dark matter by using cryogenic detectors of two types (HV and iZIP) and two target materials (germanium and silicon). The experiment is being designed with an initial sensitivity to nuclear recoil cross sections ~1×10 –43 cm 2 for a dark matter particle mass of 1 GeV/c 2, and with capacity to continue exploration to both smaller masses and better sensitivities. The phonon sensitivity of the HV detectors will be sufficient to detect nuclear recoils from sub-GeV dark matter. Amore » detailed calibration of the detector response to low-energy recoils will be needed to optimize running conditions of the HV detectors and to interpret their data for dark matter searches. Low-activity shielding, and the depth of SNOLAB, will reduce most backgrounds, but cosmogenically produced 3H and naturally occurring 32Si will be present in the detectors at some level. Even if these backgrounds are 10 times higher than expected, the science reach of the HV detectors would be over 3 orders of magnitude beyond current results for a dark matter mass of 1 GeV/c 2. The iZIP detectors are relatively insensitive to variations in detector response and backgrounds, and will provide better sensitivity for dark matter particles with masses ≳5 GeV/c 2. The mix of detector types (HV and iZIP), and targets (germanium and silicon), planned for the experiment, as well as flexibility in how the detectors are operated, will allow us to maximize the low-mass reach, and understand the backgrounds that the experiment will encounter. In conclusion, upgrades to the experiment, perhaps with a variety of ultra-low-background cryogenic detectors, will extend dark matter sensitivity down to the “neutrino floor,” where coherent scatters of solar neutrinos become a limiting background.« less

Nanopillar arrays on semiconductor membranes as electron emission amplifiers.

PubMed

Qin, Hua; Kim, Hyun-Seok; Blick, Robert H

2008-03-05

A new transmission-type electron multiplier was fabricated from silicon-on-insulator (SOI) material by integrating an array of one-dimensional (1D) silicon nanopillars onto a two-dimensional (2D) silicon membrane. Primary electrons are injected into the nanopillar-membrane (NPM) system from the flat surface of the membrane, while electron emission from the nanopillars is probed by an anode. The secondary electron yield (SEY) from the nanopillars in the current device is found to be about 1.8 times that of the plain silicon membrane. This gain in electron number is slightly enhanced by the electric field applied from the anode. Further optimization of the dimensions of the NPM and an application of field emission promise an even higher gain for detector applications and allow for probing of electronic/mechanical excitations in an NPM system stimulated by incident particles or radiation.

In situ radiation test of silicon and diamond detectors operating in superfluid helium and developed for beam loss monitoring

NASA Astrophysics Data System (ADS)

Kurfürst, C.; Dehning, B.; Sapinski, M.; Bartosik, M. R.; Eisel, T.; Fabjan, C.; Rementeria, C. A.; Griesmayer, E.; Eremin, V.; Verbitskaya, E.; Zabrodskii, A.; Fadeeva, N.; Tuboltsev, Y.; Eremin, I.; Egorov, N.; Härkönen, J.; Luukka, P.; Tuominen, E.

2015-05-01

As a result of the foreseen increase in the luminosity of the Large Hadron Collider, the discrimination between the collision products and possible magnet quench-provoking beam losses of the primary proton beams is becoming more critical for safe accelerator operation. We report the results of ongoing research efforts targeting the upgrading of the monitoring system by exploiting Beam Loss Monitor detectors based on semiconductors located as close as possible to the superconducting coils of the triplet magnets. In practice, this means that the detectors will have to be immersed in superfluid helium inside the cold mass and operate at 1.9 K. Additionally, the monitoring system is expected to survive 20 years of LHC operation, resulting in an estimated radiation fluence of 1×1016 proton/cm2, which corresponds to a dose of about 2 MGy. In this study, we monitored the signal degradation during the in situ irradiation when silicon and single-crystal diamond detectors were situated in the liquid/superfluid helium and the dependences of the collected charge on fluence and bias voltage were obtained. It is shown that diamond and silicon detectors can operate at 1.9 K after 1×1016 p/cm2 irradiation required for application as BLMs, while the rate of the signal degradation was larger in silicon detectors than in the diamond ones. For Si detectors this rate was controlled mainly by the operational mode, being larger at forward bias voltage.

Testing of the KRI-developed Silicon PIN Radioxenon Detector

DOE Office of Scientific and Technical Information (OSTI.GOV)

Foxe, Michael P.; McIntyre, Justin I.

Radioxenon detectors are used for the verification of the Comprehensive Nuclear-Test-Ban Treaty (CTBT) in a network of detectors throughout the world called the International Monitoring System (IMS). The Comprehensive Nuclear-Test-Ban Treaty Organization (CTBTO) Provisional Technical Secretariat (PTS) has tasked Pacific Northwest National Laboratory (PNNL) with testing a V.G. Khlopin Radium Institute (KRI) and Lares Ltd-developed Silicon PIN detector for radioxenon detection. PNNL measured radioxenon with the silicon PIN detector and determined its potential compared to current plastic scintillator beta cells. While the PNNL tested Si detector experienced noise issues, a second detector was tested in Russia at Lares Ltd, whichmore » did not exhibit the noise issues. Without the noise issues, the Si detector produces much better energy resolution and isomer peak separation than a conventional plastic scintillator cell used in the SAUNA systems in the IMS. Under the assumption of 1 cm 3 of Xe in laboratory-like conditions, 24-hr count time (12-hr count time for the SAUNA), with the respective shielding the minimum detectable concentrations for the Si detector tested by Lares Ltd (and a conventional SAUNA system) were calculated to be: 131mXe – 0.12 mBq/m 3 (0.12 mBq/m 3); 133Xe – 0.18 mBq/m 3 (0.21 mBq/m 3); 133mXe – 0.07 mBq/m 3 (0.15 mBq/m 3); 135Xe – 0.45 mBq/m 3 (0.67 mBq/m 3). Detection limits, which are one of the important factors in choosing the best detection technique for radioxenon in field conditions, are significantly better than for SAUNA-like detection systems for 131mXe and 133mXe, but similar for 133Xe and 135Xe. Another important factor is the amount of “memory effect” or carry over signal from one radioxenon measurement to the subsequent sample. The memory effect is reduced by a factor of 10 in the Si PIN detector compared to the current plastic scintillator cells. There is potential for further reduction with the removal of plastics within the cell, which will need to be explored in future work. A third important parameter in choosing the best detection technique for radioxenon is the resolution of the electron detection. While the resolution is important in determining the minimum detectable concentration, it plays a larger role in source identification when there is a visible signal. The Silicon PIN diodes generated improved resolution over a similar plastic scintillator cell. With the improved resolution, it becomes easier to distinguish the radioxenon isomers ( 133mXe and 131mXe) from the 133Xe beta continuum background. With the beta background from 133Xe ever present with the detection of the isomers, the improved resolution proves vital in calculating the ratios of the three isotopes. With an accurate measurement of the isotopic ratios, the anthropogenic sources of radioxenon (medical isotope production and nuclear reactors) can be more accurately distinguished. Based on the results shown within this report, a Si PIN beta cell shows the potential to aid in the operation and discriminating power of the IMS for the CTBTO. However, there are a number of issues that need attention before a detector of this design would be reliable enough for field operations in the IMS. Issues that need develop include, but are not limited to: studying the robustness of the design in field conditions, eliminating or minimizing the noise and variability of individual Si detector elements, understanding the long-term gain stability of the Si detectors, and reducing the non-Si materials within the cell (i.e. the plastic housing).« less

Ultraviolet /UV/ sensitive phosphors for silicon imaging detectors

NASA Technical Reports Server (NTRS)

Viehmann, W.; Cowens, M. W.; Butner, C. L.

1981-01-01

The fluorescence properties of UV sensitive organic phosphors and the radiometric properties of phosphor coated silicon detectors in the VUV, UV, and visible wavelengths are described. With evaporated films of coronene and liumogen, effective quantum efficiencies of up to 20% have been achieved on silicon photodiodes in the vacuum UV. With thin films of methylmethacrylate (acrylic), which are doped with organic laser dyes and deposited from solution, detector quantum efficiencies of the order of 15% for wavelengths of 120-165 nm and of 40% for wavelengths above 190 nm have been obtained. The phosphor coatings also act as antireflection coatings and thereby enhance the response of coated devices throughout the visible and near IR.

Amorphous silicon radiation detectors

DOEpatents

Street, Robert A.; Perez-Mendez, Victor; Kaplan, Selig N.

1992-01-01

Hydrogenated amorphous silicon radiation detector devices having enhanced signal are disclosed. Specifically provided are transversely oriented electrode layers and layered detector configurations of amorphous silicon, the structure of which allow high electric fields upon application of a bias thereby beneficially resulting in a reduction in noise from contact injection and an increase in signal including avalanche multiplication and gain of the signal produced by incoming high energy radiation. These enhanced radiation sensitive devices can be used as measuring and detection means for visible light, low energy photons and high energy ionizing particles such as electrons, x-rays, alpha particles, beta particles and gamma radiation. Particular utility of the device is disclosed for precision powder crystallography and biological identification.

Amorphous silicon radiation detectors

DOEpatents

Street, R.A.; Perez-Mendez, V.; Kaplan, S.N.

1992-11-17

Hydrogenated amorphous silicon radiation detector devices having enhanced signal are disclosed. Specifically provided are transversely oriented electrode layers and layered detector configurations of amorphous silicon, the structure of which allow high electric fields upon application of a bias thereby beneficially resulting in a reduction in noise from contact injection and an increase in signal including avalanche multiplication and gain of the signal produced by incoming high energy radiation. These enhanced radiation sensitive devices can be used as measuring and detection means for visible light, low energy photons and high energy ionizing particles such as electrons, x-rays, alpha particles, beta particles and gamma radiation. Particular utility of the device is disclosed for precision powder crystallography and biological identification. 13 figs.

A LYSO crystal array readout by silicon photomultipliers as compact detector for space applications

DOE Office of Scientific and Technical Information (OSTI.GOV)

Kryemadhi, A.; Barner, L.; Grove, A.

Precise measurements of GeV range gamma rays help narrow down among var- ious gamma emission models and increase sensitivity for dark matter searches. Construction of precise as well as compact instruments requires detectors with high efficiency, high stopping power, excellent energy resolution, and excellent angular resolution. Fast and bright crystal scintillators coupled with small foot- print photo-detectors are suitable candidates. We prototyped a detector array consisting of four LYSO crystals where each crystal is read out by a 2x2 SensL ArrayJ60035 silicon photomultipliers. The LYSO crystals were chosen because of their good light yield, fast decay time, demonstrated radiation hardness,more » and small radiation length. Here, we used the silicon photomultiplier arrays as photo- detectors because of their small size, simple readout, low voltage operation, and immunity to magnetic elds. We also studied the detector performance in the energy range of interest by exposing it to 2-16 GeV particles produced at the Test Beam Facility of Fermi National Accelerator Laboratory.« less

A LYSO crystal array readout by silicon photomultipliers as compact detector for space applications

DOE PAGES

Kryemadhi, A.; Barner, L.; Grove, A.; ...

2017-10-31

Precise measurements of GeV range gamma rays help narrow down among var- ious gamma emission models and increase sensitivity for dark matter searches. Construction of precise as well as compact instruments requires detectors with high efficiency, high stopping power, excellent energy resolution, and excellent angular resolution. Fast and bright crystal scintillators coupled with small foot- print photo-detectors are suitable candidates. We prototyped a detector array consisting of four LYSO crystals where each crystal is read out by a 2x2 SensL ArrayJ60035 silicon photomultipliers. The LYSO crystals were chosen because of their good light yield, fast decay time, demonstrated radiation hardness,more » and small radiation length. Here, we used the silicon photomultiplier arrays as photo- detectors because of their small size, simple readout, low voltage operation, and immunity to magnetic elds. We also studied the detector performance in the energy range of interest by exposing it to 2-16 GeV particles produced at the Test Beam Facility of Fermi National Accelerator Laboratory.« less

A radiation detector fabricated from silicon photodiode.

PubMed

Yamamoto, H; Hatakeyama, S; Norimura, T; Tsuchiya, T

1984-12-01

A silicon photodiode is converted to a low energy charged particle radiation detector. The window thickness of the fabricated detector is evaluated to be 50 micrograms/cm2. The area of the depletion region is 13.2 mm2 and the depth of it is estimated to be about 100 microns. The energy resolution (FWHM) is 14.5 ke V for alpha-particles from 241Am and 2.5 ke V for conversion electrons from 109Cd, respectively.

Silicon drift detectors with on-chip electronics for x-ray spectroscopy.

PubMed

Fiorini, C; Longoni, A; Hartmann, R; Lechner, P; Strüder, L

1997-01-01

The silicon drift detector (SDD) is a semiconductor device based on high resistivity silicon fully depleted through junctions implanted on both sides of the semiconductor wafer. The electrons generated by the ionizing radiation are driven by means of a suitable electric field from the point of interaction toward a collecting anode of small capacitance, independent of the active area of the detector. A suitably designed front-end JFET has been directly integrated on the detector chip close to the anode region, in order to obtain a nearly ideal capacitive matching between detector and transistor and to minimize the stray capacitances of the connections. This feature allows it to reach high energy resolution also at high count rates and near room temperature. The present work describes the structure and the performance of SDDs specially designed for high resolution spectroscopy with soft x rays at high detection rate. Experimental results of SDDs used in spectroscopy applications are also reported.

Expanding the detection efficiency of silicon drift detectors

NASA Astrophysics Data System (ADS)

Schlosser, D. M.; Lechner, P.; Lutz, G.; Niculae, A.; Soltau, H.; Strüder, L.; Eckhardt, R.; Hermenau, K.; Schaller, G.; Schopper, F.; Jaritschin, O.; Liebel, A.; Simsek, A.; Fiorini, C.; Longoni, A.

2010-12-01

To expand the detection efficiency Silicon Drift Detectors (SDDs) with various customized radiation entrance windows, optimized detector areas and geometries have been developed. Optimum values for energy resolution, peak to background ratio (P/B) and high count rate capability support the development. Detailed results on sensors optimized for light element detection down to Boron or even lower will be reported. New developments for detecting medium and high X-ray energies by increasing the effective detector thickness will be presented. Gamma-ray detectors consisting of a SDD coupled to scintillators like CsI(Tl) and LaBr 3(Ce) have been examined. Results of the energy resolution for the 137Cs 662 keV line and the light yield (LY) of such detector systems will be reported.

Two-dimensional imaging detectors for structural biology with X-ray lasers.

PubMed

Denes, Peter

2014-07-17

Our ability to harness the advances in microelectronics over the past decade(s) for X-ray detection has resulted in significant improvements in the state of the art. Biology with X-ray free-electron lasers present daunting detector challenges: all of the photons arrive at the same time, and individual high peak power pulses must be read out shot-by-shot. Direct X-ray detection in silicon pixel detectors--monolithic or hybrid--are the standard for XFELs today. For structural biology, improvements are needed for today's 10-100 Hz XFELs, and further improvements are required for tomorrow's 10+ kHz XFELs. This article will discuss detector challenges, why they arise and ways to overcome them, along with the current state of the art. © 2014 The Author(s) Published by the Royal Society. All rights reserved.

CAKE: the coincidence array for K600 experiments

NASA Astrophysics Data System (ADS)

Adsley, P.; Neveling, R.; Papka, P.; Dyers, Z.; Brümmer, J. W.; Diget, C. Aa.; Hubbard, N. J.; Li, K. C. W.; Long, A.; Marin-Lambarri, D. J.; Pellegri, L.; Pesudo, V.; Pool, L. C.; Smit, F. D.; Triambak, S.

2017-02-01

The combination of a magnetic spectrometer and ancillary detectors such as silicon detectors is a powerful tool for the study of nuclear reactions and nuclear structure. This paper discusses the recently commissioned silicon array called the "CAKE" which is designed for use with the K600 magnetic spectrometer at iThemba LABS.

The AGILE silicon tracker: testbeam results of the prototype silicon detector

NASA Astrophysics Data System (ADS)

Barbiellini, G.; Fedel, G.; Liello, F.; Longo, F.; Pontoni, C.; Prest, M.; Tavani, M.; Vallazza, E.

2002-09-01

AGILE (Light Imager for Gamma-ray Astrophysics) is a small scientific satellite for the detection of cosmic γ-ray sources in the energy range 30MeV-50GeV with a very large field of view (1/4 of the sky). It is planned to be operational in the years 2003-2006, a period in which no other γ-ray mission in the same energy range is foreseen. The heart of the AGILE scientific instrument is a silicon-tungsten tracker made of 14 planes of single sided silicon detectors for a total of 43000 readout channels. Each detector has a dimension of 9.5×9.5cm2 and a thickness of 410μm. We present here a detailed description of the performance of the detector prototype during a testbeam period at the CERN PS in May 2000. The Tracker performance is described in terms of position resolution and signal-to-noise ratio for on and off-axis incident charged particles. The measured 40μm resolution for a large range of incident angles will provide an excellent angular resolution for cosmic γ-ray imaging.

Linewidth Narrowing and Purcell Enhancement in Photonic Crystal Cavities on an Er-Doped Silicon Nitride Platform

DTIC Science & Technology

2010-02-01

Low noise superconducting single photon detectors on silicon,” Appl. Phys. Lett. 93, 131101 (2008). 20. M. T. Tanner, C. M. Natarajan, V. K... wavelength sensitivity in NbTiN superconducting nanowire single-photon detectors fabricated on oxidized silicon substrates,” Proceedings of Single...cavity resonance wavelength and Q-factor for the PC cavity are shown in Figure 3. The data are taken both at low (0.050 mW) pump power and high (30 mW

Overview of the ATLAS Insertable B-Layer (IBL) Project

NASA Astrophysics Data System (ADS)

Kagan, M. A.

2014-06-01

The first upgrade for the Pixel Detector will be a new pixel layer which is currently under construction and will be installed during the first shutdown of the LHC machine, in 2013-14. The new detector, called the Insertable B-layer (IBL), will be installed between the existing Pixel Detector and a new, smaller radius beam-pipe. Two different silicon sensor technologies, planar n-in-n and 3D, will be used, connected with the new generation 130nm IBM CMOS FE-I4 readout chip via solder bump-bonds. A production quality control test bench was set up in the ATLAS inner detector assembly clean room to verify and rate the performance of the detector elements before integration around the beam-pipe. An overview of the IBL project, of the module design, the qualification for these sensor technologies, the integration quality control setups and recent results in the construction of this full scale new concept detector is discussed.

The ATLAS SemiConductor Tracker operation and performance

NASA Astrophysics Data System (ADS)

Pater, J. R.

2012-04-01

The ATLAS SemiConductor Tracker (SCT) is a key precision tracking detector in the ATLAS experiment at CERN's Large Hadron Collider. The SCT is composed of 4088 planar p-in-n silicon micro-strip detectors. The signals from the strips are processed in the front-end ABCD3TA ASICs, which operate in binary readout mode; data are transferred to the off-detector readout electronics via optical fibres. The SCT was completed in 2007. An extensive commissioning phase followed, during which calibration data were collected and analysed to determine the noise performance of the system, and further performance parameters of the detector were determined using cosmic ray data, both with and without magnetic field. After the commissioning phase, the SCT was ready for the first LHC proton-proton collisions in December 2009. From the beginning of data taking, the completed SCT has been in very good shape with more than 99% of its 6.3 million strips operational; the detector is well timed-in and the operational channels are 99.9% efficient in data acquisition. The noise occupancy and hit efficiency are better than the design specifications. The detector geometry is monitored continuously with a laser-based alignment system and is stable to the few-micron level; the alignment accuracy as determined by tracks is near specification and improving as statistics increase. The sensor behaviour in the 2T solenoidal magnetic field has been studied by measuring the Lorentz angle. Radiation damage in the silicon is monitored by periodic measurements of the leakage current; these measurements are in reasonable agreement with predictions.

The Fabrication and Characterization of Ni/4H-SiC Schottky Diode Radiation Detectors with a Sensitive Area of up to 4 cm².

PubMed

Liu, Lin-Yue; Wang, Ling; Jin, Peng; Liu, Jin-Liang; Zhang, Xian-Peng; Chen, Liang; Zhang, Jiang-Fu; Ouyang, Xiao-Ping; Liu, Ao; Huang, Run-Hua; Bai, Song

2017-10-13

Silicon carbide (SiC) detectors of an Ni/4H-SiC Schottky diode structure and with sensitive areas of 1-4 cm² were fabricated using high-quality lightly doped epitaxial 4H-SiC material, and were tested in the detection of alpha particles and pulsed X-rays/UV-light. A linear energy response to alpha particles ranging from 5.157 to 5.805 MeV was obtained. The detectors were proved to have a low dark current, a good energy resolution, and a high neutron/gamma discrimination for pulsed radiation, showing the advantages in charged particle detection and neutron detection in high-temperature and high-radiation environments.

Fabrication of Silicon Backshort Assembly for Waveguide-Coupled Superconducting Detectors

NASA Technical Reports Server (NTRS)

Crowe, E.; Bennett, C. L.; Chuss, D. T.; Denis, K. L.; Eimer, J.; Lourie, N.; Marriage, T.; Moseley, S. H.; Rostem, K.; Stevenson, T. R.;

Advanced detectors and signal processing

NASA Technical Reports Server (NTRS)

Greve, D. W.; Rasky, P. H. L.; Kryder, M. H.

1986-01-01

Continued progress is reported toward development of a silicon on garnet technology which would allow fabrication of advanced detection and signal processing circuits on bubble memories. The first integrated detectors and propagation patterns have been designed and incorporated on a new mask set. In addition, annealing studies on spacer layers are performed. Based on those studies, a new double layer spacer is proposed which should reduce contamination of the silicon originating in the substrate. Finally, the magnetic sensitivity of uncontaminated detectors from the last lot of wafers is measured. The measured sensitivity is lower than anticipated but still higher than present magnetoresistive detectors.

Simulation and Measurement of Absorbed Dose from 137 Cs Gammas Using a Si Timepix Detector

NASA Technical Reports Server (NTRS)

Stoffle, Nicholas; Pinsky, Lawrence; Empl, Anton; Semones, Edward

2011-01-01

The TimePix readout chip is a hybrid pixel detector with over 65k independent pixel elements. Each pixel contains its own circuitry for charge collection, counting logic, and readout. When coupled with a Silicon detector layer, the Timepix chip is capable of measuring the charge, and thus energy, deposited in the Silicon. Measurements using a NIST traceable 137Cs gamma source have been made at Johnson Space Center using such a Si Timepix detector, and this data is compared to simulations of energy deposition in the Si layer carried out using FLUKA.

SiC detectors to monitor ionizing radiations emitted from nuclear events and plasmas

NASA Astrophysics Data System (ADS)

Torrisi, L.; Cannavò, A.

2016-09-01

Silicon Carbide (SiC) semiconductor detectors are increasingly employed in Nuclear Physics for their advantages with respect to traditional silicon (Si). Such detectors show an energy resolution, charge mobility, response velocity and detection efficiency similar to Si detectors. However, the higher band gap (3.26 eV), the lower leakage current (∼10 pA) maintained also at room temperature, the higher radiation hardness and the higher density with respect to Si represent some indisputable advantages characterizing such detectors. The devices can be employed at high temperatures, at high absorbed doses and in the case of high visible light intensities, for example, in plasma, for limited exposition times without damage. Generally SiC Schottky diodes are employed in reverse polarization with an active region depth of the order of 100 µm, purity below 1014 cm-3 and an active area lower than 1 cm2. Measurements in the regime of proportionality with the radiation energy released in the active region and measurements in time-of-flight configuration are employed for nuclear emission events produced at both low and high fluences. Alpha spectra demonstrated an energy resolution of about 1.3% at 5.8 MeV. Radiation emission from laser-generated plasma can be monitored in terms of detected photons, electrons and ions, using the laser pulse as a start signal and the radiation detection as a stop signal, enabling to measure the ion velocity by knowing the target-detector flight distance. SiC spectra acquired in the Messina University laboratories using radioactive ion sources and at the PALS laboratory facility in Prague (Czech Republic) are presented. A preliminary study of the use of SiC detectors, embedded in a water equivalent polymer, as a dosimeter is presented and discussed.

Image quality and radiation dose on digital chest imaging: comparison of amorphous silicon and amorphous selenium flat-panel systems.

PubMed

Bacher, Klaus; Smeets, Peter; Vereecken, Ludo; De Hauwere, An; Duyck, Philippe; De Man, Robert; Verstraete, Koenraad; Thierens, Hubert

2006-09-01

The aim of this study was to compare the image quality and radiation dose in chest imaging using an amorphous silicon flat-panel detector system and an amorphous selenium flat-panel detector system. In addition, the low-contrast performance of both systems with standard and low radiation doses was compared. In two groups of 100 patients each, digital chest radiographs were acquired with either an amorphous silicon or an amorphous selenium flat-panel system. The effective dose of the examination was measured using thermoluminescent dosimeters placed in an anthropomorphic Rando phantom. The image quality of the digital chest radiographs was assessed by five experienced radiologists using the European Guidelines on Quality Criteria for Diagnostic Radiographic Images. In addition, a contrast-detail phantom study was set up to assess the low-contrast performance of both systems at different radiation dose levels. Differences between the two groups were tested for significance using the two-tailed Mann-Whitney test. The amorphous silicon flat-panel system allowed an important and significant reduction in effective dose in comparison with the amorphous selenium flat-panel system (p < 0.0001) for both the posteroanterior and lateral views. In addition, clinical image quality analysis showed that the dose reduction was not detrimental to image quality. Compared with the amorphous selenium flat-panel detector system, the amorphous silicon flat-panel detector system performed significantly better in the low-contrast phantom study, with phantom entrance dose values of up to 135 muGy. Chest radiographs can be acquired with a significantly lower patient radiation dose using an amorphous silicon flat-panel system than using an amorphous selenium flat-panel system, thereby producing images that are equal or even superior in quality to those of the amorphous selenium flat-panel detector system.

Modeling the impact of preflushing on CTE in proton irradiated CCD-based detectors

NASA Astrophysics Data System (ADS)

Philbrick, R. H.

2002-04-01

A software model is described that performs a "real world" simulation of the operation of several types of charge-coupled device (CCD)-based detectors in order to accurately predict the impact that high-energy proton radiation has on image distortion and modulation transfer function (MTF). The model was written primarily to predict the effectiveness of vertical preflushing on the custom full frame CCD-based detectors intended for use on the proposed Kepler Discovery mission, but it is capable of simulating many other types of CCD detectors and operating modes as well. The model keeps track of the occupancy of all phosphorous-silicon (P-V), divacancy (V-V) and oxygen-silicon (O-V) defect centers under every CCD electrode over the entire detector area. The integrated image is read out by simulating every electrode-to-electrode charge transfer in both the vertical and horizontal CCD registers. A signal level dependency on the capture and emission of signal is included and the current state of each electrode (e.g., barrier or storage) is considered when distributing integrated and emitted signal. Options for performing preflushing, preflashing, and including mini-channels are available on both the vertical and horizontal CCD registers. In addition, dark signal generation and image transfer smear can be selectively enabled or disabled. A comparison of the charge transfer efficiency (CTE) data measured on the Hubble space telescope imaging spectrometer (STIS) CCD with the CTE extracted from model simulations of the STIS CCD show good agreement.

The Gigatracker: An ultra-fast and low-mass silicon pixel detector for the NA62 experiment

NASA Astrophysics Data System (ADS)

Fiorini, M.; Carassiti, V.; Ceccucci, A.; Cortina, E.; Cotta Ramusino, A.; Dellacasa, G.; Garbolino, S.; Jarron, P.; Kaplon, J.; Kluge, A.; Mapelli, A.; Marchetto, F.; Martin, E.; Martoiu, S.; Mazza, G.; Morel, M.; Noy, M.; Nuessle, G.; Petrucci, F.; Riedler, P.; Aglieri Rinella, G.; Rivetti, A.; Tiuraniemi, S.

2011-02-01

The Gigatracker is a hybrid silicon pixel detector developed to track the highly intense NA62 hadron beam with a time resolution of 150 ps (rms). The beam spectrometer of the experiment is composed of three Gigatracker stations installed in vacuum in order to precisely measure momentum, time and direction of every traversing particle. Precise tracking demands a very low mass of the detector assembly ( <0.5% X0 per station) in order to limit multiple scattering and beam hadronic interactions. The high rate and especially the high timing precision requirements are very demanding: two R&D options are ongoing and the corresponding prototype read-out chips have been recently designed and produced in 0.13 μm CMOS technology. One solution makes use of a constant fraction discriminator and on-pixel analogue-based time-to-digital-converter (TDC); the other comprises a delay-locked loop based TDC placed at the end of each pixel column and a time-over-threshold discriminator with time-walk correction technique. The current status of the R&D program is overviewed and results from the prototype read-out chips test are presented.

Optimization of performance parameters for large area silicon photomultipliers for use in the GlueX experiment

NASA Astrophysics Data System (ADS)

Janzen, Kathryn Louise

Largely because of their resistance to magnetic fields, silicon photomultipliers (SiPMs) are being considered as the readout for the GlueX Barrel Calorimeter, a key component of the GlueX detector located immediately inside a 2.2 T superconducting solenoid. SiPMs with active area 1 x 1 mm2 have been investigated for use in other experiments, but detectors with larger active areas are required for the GlueX BCAL. This puts the GlueX collaboration in the unique position of being pioneers in the use of this frontend detection revolution by driving the technology for larger area sensors. SensL, a photonics research and development company in Ireland, has been collaborating with the University of Regina GlueX group to develop prototype large area SiPMs comprising 16 - 3x3 mm2 cells assembled in a close-packed matrix. Performance parameters of individual SensL 1x1 mm2 and 3x3 mm2 SiPMs along with prototype SensL SiPM arrays are tested, including current versus voltage characteristics, photon detection efficiency, and gain uniformity, in an effort to determine the suitability of these detectors to the GlueX BCAL readout.

The mini-calorimeter of the AGILE satellite

NASA Astrophysics Data System (ADS)

Labanti, C.; Marisaldi, M.; Fuschino, F.; Galli, M.; Argan, A.; Bulgarelli, A.; Costa, E.; Di Cocco, G.; Gianotti, F.; Tavani, M.; Trifoglio, M.

2006-06-01

AGILE is a small space mission of the Italian Space Agency (ASI) devoted to astrophysics in the gamma-ray energy range 30 MeV - 50 GeV, and in the X-ray band 15 keV - 45 keV. The AGILE Payload is composed of three instruments: a gamma-ray imager based on a Tungsten-Silicon Tracker (ST), for observations in the gamma ray energy range 30 MeV - 50 GeV, a Silicon based X-ray detector, Super-Agile (SA), for imaging in the range 15 keV - 40 keV and a CsI(Tl) Mini-Calorimeter (MCAL) that detects gamma rays or particle energy deposits between 300 keV and 200 MeV. The payload is currently fully integrated and the satellite is expected to be launched in the second half of 2006. MCAL is composed of 30 CsI(Tl) scintillator detectors with the shape of a bar with photodiode readout at both ends, arranged in two orthogonal layers. MCAL can work both as a slave of the ST and as an independent gamma-ray detector for the detection of transients and Gamma Ray Bursts. In this paper a detailed description of MCAL is presented together with the first on ground calibration results.

Parameter Extraction Method for the Electrical Model of a Silicon Photomultiplier

NASA Astrophysics Data System (ADS)

Licciulli, Francesco; Marzocca, Cristoforo

2016-10-01

The availability of an effective electrical model, able to accurately reproduce the signals generated by a Silicon Photo-Multiplier coupled to the front-end electronics, is mandatory when the performance of a detection system based on this kind of detector has to be evaluated by means of reliable simulations. We propose a complete extraction procedure able to provide the whole set of the parameters involved in a well-known model of the detector, which includes the substrate ohmic resistance. The technique allows achieving very good quality of the fit between simulation results provided by the model and experimental data, thanks to accurate discrimination between the quenching and substrate resistances, which results in a realistic set of extracted parameters. The extraction procedure has been applied to a commercial device considering a wide range of different conditions in terms of input resistance of the front-end electronics and interconnection parasitics. In all the considered situations, very good correspondence has been found between simulations and measurements, especially for what concerns the leading edge of the current pulses generated by the detector, which strongly affects the timing performance of the detection system, thus confirming the effectiveness of the model and the associated parameter extraction technique.

The DAMPE experiment: 2 year in orbit

NASA Astrophysics Data System (ADS)

Gargano, Fabio; DAMPE Collaboration

2017-12-01

The DArk Matter Particle Explorer (DAMPE) is a space mission within the strategic framework of the Chinese Academy of Sciences, resulting from a collaboration of Chinese, Italian, and Swiss institutions, and is a new addition to the growing number of particle detectors in space. It was successfully launched in December 2015 and has commenced nominal science operations since shortly after launch. Lending technologies from its predecessors such as AMS and Fermi-LAT, it features a powerful segmented electromagnetic calorimeter which thanks to its 31 radiation lengths enables the study of charged cosmic rays in the energy domain of up to 100 TeV and gamma rays of up to 10 TeV. The calorimeter is complemented with a silicon-tungsten tracker converter which yields a comparable angular resolution as current space-borne pair-conversion gamma-ray detectors. In addition, the detector features a top anti-coincidence shield made of segmented silicon plastic scintillators and a boron-doped plastic scintillator on the bottom of the instrument to detect delayed neutrons arising from cosmic ray protons showering in the calorimeter. An overview of the mission and a summary of the latest results in the domain of charged cosmic rays, gamma rays and heavy ions will be presented.

Thin film CdTe based neutron detectors with high thermal neutron efficiency and gamma rejection for security applications

NASA Astrophysics Data System (ADS)

Smith, L.; Murphy, J. W.; Kim, J.; Rozhdestvenskyy, S.; Mejia, I.; Park, H.; Allee, D. R.; Quevedo-Lopez, M.; Gnade, B.

2016-12-01

Solid-state neutron detectors offer an alternative to 3He based detectors, but suffer from limited neutron efficiencies that make their use in security applications impractical. Solid-state neutron detectors based on single crystal silicon also have relatively high gamma-ray efficiencies that lead to false positives. Thin film polycrystalline CdTe based detectors require less complex processing with significantly lower gamma-ray efficiencies. Advanced geometries can also be implemented to achieve high thermal neutron efficiencies competitive with silicon based technology. This study evaluates these strategies by simulation and experimentation and demonstrates an approach to achieve >10% intrinsic efficiency with <10-6 gamma-ray efficiency.

A fast-neutron detection detector based on fission material and large sensitive 4H silicon carbide Schottky diode detector

NASA Astrophysics Data System (ADS)

Liu, Linyue; Liu, Jinliang; Zhang, Jianfu; Chen, Liang; Zhang, Xianpeng; Zhang, Zhongbing; Ruan, Jinlu; Jin, Peng; Bai, Song; Ouyang, Xiaoping

2017-12-01

Silicon carbide radiation detectors are attractive in the measurement of the total numbers of pulsed fast neutrons emitted from nuclear fusion and fission devices because of high neutron-gamma discrimination and good radiation resistance. A fast-neutron detection system was developed based on a large-area 4H-SiC Schottky diode detector and a 235U fission target. Excellent pulse-height spectra of fission fragments induced by mono-energy deuterium-tritium (D-T) fusion neutrons and continuous energy fission neutrons were obtained. The detector is proven to be a good candidate for pulsed fast neutron detection in a complex radiation field.

DEATH-STAR: Silicon and photovoltaic fission fragment detector arrays for light-ion induced fission correlation studies

DOE Office of Scientific and Technical Information (OSTI.GOV)

Koglin, J. D.; Burke, J. T.; Fisher, S. E.

Here, the Direct Excitation Angular Tracking pHotovoltaic-Silicon Telescope ARray (DEATH-STAR) combines a series of 12 silicon detectors in a ΔE–E configuration for charged particle identification with a large-area array of 56 photovoltaic (solar) cells for detection of fission fragments. The combination of many scattering angles and fission fragment detectors allows for an angular-resolved tool to study reaction cross sections using the surrogate method, anisotropic fission distributions, and angular momentum transfers through stripping, transfer, inelastic scattering, and other direct nuclear reactions. The unique photovoltaic detectors efficiently detect fission fragments while being insensitive to light ions and have a timing resolution ofmore » 15.63±0.37 ns. Alpha particles are detected with a resolution of 35.5 keV 1σ at 7.9 MeV. Measured fission fragment angular distributions are also presented.« less

DEATH-STAR: Silicon and Photovoltaic Fission Fragment Detector Arrays for Light-Ion Induced Fission Correlation Studies

NASA Astrophysics Data System (ADS)

Koglin, J. D.; Burke, J. T.; Fisher, S. E.; Jovanovic, I.

2017-05-01

The Direct Excitation Angular Tracking pHotovoltaic-Silicon Telescope ARray (DEATH-STAR) combines a series of 12 silicon detectors in a ΔE - E configuration for charged particle identification with a large-area array of 56 photovoltaic (solar) cells for detection of fission fragments. The combination of many scattering angles and fission fragment detectors allows for an angular-resolved tool to study reaction cross sections using the surrogate method, anisotropic fission distributions, and angular momentum transfers through stripping, transfer, inelastic scattering, and other direct nuclear reactions. The unique photovoltaic detectors efficiently detect fission fragments while being insensitive to light ions and have a timing resolution of 15.63±0.37 ns. Alpha particles are detected with a resolution of 35.5 keV 1σ at 7.9 MeV. Measured fission fragment angular distributions are also presented.

DEATH-STAR: Silicon and photovoltaic fission fragment detector arrays for light-ion induced fission correlation studies

DOE PAGES

Koglin, J. D.; Burke, J. T.; Fisher, S. E.; ...

2017-02-20

Here, the Direct Excitation Angular Tracking pHotovoltaic-Silicon Telescope ARray (DEATH-STAR) combines a series of 12 silicon detectors in a ΔE–E configuration for charged particle identification with a large-area array of 56 photovoltaic (solar) cells for detection of fission fragments. The combination of many scattering angles and fission fragment detectors allows for an angular-resolved tool to study reaction cross sections using the surrogate method, anisotropic fission distributions, and angular momentum transfers through stripping, transfer, inelastic scattering, and other direct nuclear reactions. The unique photovoltaic detectors efficiently detect fission fragments while being insensitive to light ions and have a timing resolution ofmore » 15.63±0.37 ns. Alpha particles are detected with a resolution of 35.5 keV 1σ at 7.9 MeV. Measured fission fragment angular distributions are also presented.« less

Design of an Experiment to Measure ann Using 3H(γ, pn)n at HIγS★

NASA Astrophysics Data System (ADS)

Friesen, F. Q. L.; Ahmed, M. W.; Crowe, B. J.; Crowell, A. S.; Cumberbatch, L. C.; Fallin, B.; Han, Z.; Howell, C. R.; Malone, R. M.; Markoff, D.; Tornow, W.; Witała, H.

2016-03-01

We provide an update on the development of an experiment at TUNL for determining the 1S0 neutron-neutron (nn) scattering length (ann) from differential cross-section measurements of three-body photodisintegration of the triton. The experiment will be conducted using a linearly polarized gamma-ray beam at the High Intensity Gamma-ray Source (HIγS) and tritium gas contained in thin-walled cells. The main components of the planned experiment are a 230 Ci gas target system, a set of wire chambers and silicon strip detectors on each side of the beam axis, and an array of neutron detectors on each side beyond the silicon detectors. The protons emitted in the reaction are tracked in the wire chambers and their energy and position are measured in silicon strip detectors. The first iteration of the experiment will be simplified, making use of a collimator system, and silicon detectors to interrogate the main region of interest near 90° in the polar angle. Monte-Carlo simulations based on rigorous 3N calculations have been conducted to validate the sensitivity of the experimental setup to ann. This research supported in part by the DOE Office of Nuclear Physics Grant Number DE-FG02-97ER41033

CDF-II and B physics

NASA Astrophysics Data System (ADS)

Lockyer, Nigel S.

1998-02-01

This paper reports on the CDF-II B physics goals and new detector systems presently being built for Run-II of the Tevatron collider in the year 2000. The B physics goals are focused towards observing and studying CP violation and B s flavor oscillations. Estimates of expected performance are reported. The new detector systems described are: the 5-layer 3-D silicon vertex detector, the intermedia silicon tracking layers, the central tracking drift chamber, muon system upgrades, and a proposed time-of-flight system.

Development of a thin scintillation films fission-fragment detector and a novel neutron source

DOE PAGES

Rusev, Gencho Yordanov; Jandel, Marian; Baramsai, Bayarbadrakh; ...

2015-08-26

Here, investigation of prompt fission and neutron-capture Υ rays from fissile actinide samples at the Detector for Advanced Neutron Capture Experiments (DANCE) requires use of a fission-fragment detector to provide a trigger or a veto signal. A fission-fragment detector based on thin scintillating films and silicon photomultipliers has been built to serve as a trigger/veto detector in neutron-induced fission measurements at DANCE. The fissile material is surrounded by scintillating films providing a 4π detection of the fission fragments. The scintillations were registered with silicon photomultipliers. A measurement of the 235U(n,f) reaction with this detector at DANCE revealed a correct time-of-flightmore » spectrum and provided an estimate for the efficiency of the prototype detector of 11.6(7)%. Design and test measurements with the detector are described. A neutron source with fast timing has been built to help with detector-response measurements. The source is based on the neutron emission from the spontaneous fission of 252Cf and the same type of scintillating films and silicon photomultipliers. Overall time resolution of the source is 0.3 ns. Design of the source and test measurements with it are described. An example application of the source for determining the neutron/gamma pulse-shape discrimination by a stilbene crystal is given.« less

14C autoradiography with an energy-sensitive silicon pixel detector.

PubMed

Esposito, M; Mettivier, G; Russo, P

2011-04-07

The first performance tests are presented of a carbon-14 ((14)C) beta-particle digital autoradiography system with an energy-sensitive hybrid silicon pixel detector based on the Timepix readout circuit. Timepix was developed by the Medipix2 Collaboration and it is similar to the photon-counting Medipix2 circuit, except for an added time-based synchronization logic which allows derivation of energy information from the time-over-threshold signal. This feature permits direct energy measurements in each pixel of the detector array. Timepix is bump-bonded to a 300 µm thick silicon detector with 256 × 256 pixels of 55 µm pitch. Since an energetic beta-particle could release its kinetic energy in more than one detector pixel as it slows down in the semiconductor detector, an off-line image analysis procedure was adopted in which the single-particle cluster of hit pixels is recognized; its total energy is calculated and the position of interaction on the detector surface is attributed to the centre of the charge cluster. Measurements reported are detector sensitivity, (4.11 ± 0.03) × 10(-3) cps mm(-2) kBq(-1) g, background level, (3.59 ± 0.01) × 10(-5) cps mm(-2), and minimum detectable activity, 0.0077 Bq. The spatial resolution is 76.9 µm full-width at half-maximum. These figures are compared with several digital imaging detectors for (14)C beta-particle digital autoradiography.

TU-H-CAMPUS-TeP2-03: High Sensitivity and High Resolution Fiber Based Micro-Detector for Sub-Millimeter Preclinical Dosimetry

DOE Office of Scientific and Technical Information (OSTI.GOV)

Izaguirre, E; Pokhrel, S; Knewtson, T

2016-06-15

Purpose: Current precision of small animal and cell micro-irradiators has continuously increased during the past years. Currently, preclinical irradiators can deliver sub-millimeter fields with micrometric precision but there are no water equivalent dosimeters to determine small field profiles and dose in the orthovoltage range of energies with micrometric resolution and precision. We have developed a fiber based micro-dosimeter with the resolution and dosimetric accuracy required for radiobiological research. Methods: We constructed two prototypes of micro-dosimeters based on different compositions of fiber scintillators to study the spatial resolution and dosimetric precision of small animal and cell micro-irradiators. The first has greenmore » output and the second has blue output. The blue output dosimeter has the highest sensitivity because it matches the spectral sensitivity of silicon photomultipliers. A blue detector with 500um cross section was built and tested respect to a CC01 ion chamber, film, and the 1500um green output detector. Orthovoltage fields from 1×1mm2 to 5×5mm2 were used for detector characteristics comparison. Results: The blue fiber dosimeter shows great agreement with films and matches dose measurements with the gold-standard ion chamber for 5×5mm2 fields. The detector has the appropriate sensitivity to measure fields from 1×1mm2 to larger sizes with a 1% dosimetric accuracy. The spatial resolution is in the sub-millimeter range and the spectral matching with the photomultiplier allows reducing the sensor cross section even further than the presented prototype. These results suggest that scintillating fibers combined with silicon photomultipliers is the appropriate technology to pursue micro-dosimetry for small animals and disperse cell samples. Conclusion: The constructed detectors establish a new landmark for the resolution and sensitivity of fiber based microdetectors. The validation of the detector in our small animal and cell irradiator shows that they are appropriate for preclinical and micro single cell irradiation quality assurance and dosimetry.« less

Delay-Line Three-Dimensional Position Sensitive Radiation Detection

NASA Astrophysics Data System (ADS)

Jeong, Manhee

High-resistivity silicon(Si) in large volumes and with good charge carrier transport properties has been produced and achieved success as a radiation detector material over the past few years due to its relatively low cost as well as the availability of well-established processing technologies. One application of that technology is in the fabrication of various position-sensing topologies from which the incident radiation's direction can be determined. We have succeeded in developing the modeling tools for investigating different position-sensing schemes and used those tools to examine both amplitude-based and time-based methods, an assessment that indicates that fine position-sensing can be achieved with simpler readout designs than are conventionally deployed. This realization can make ubiquitous and inexpensive deployment of special nuclear materials (SNM) detecting technology becomes more feasible because if one can deploy position-sensitive semiconductor detectors with only one or two contacts per side. For this purpose, we have described the delay-line radiation detector and its optimized fabrication. The semiconductor physics were simulated, the results from which guided the fabrication of the guard ring structure and the detector electrode, both of which included metal-field-plates. The measured improvement in the leakage current was confirmed with the fabricated devices, and the structures successfully suppressed soft-breakdown. We also demonstrated that fabricating an asymmetric strip-line structure successfully minimizing the pulse shaping and increases the distance through which one can propagate the information of the deposited charge distribution. With fabricated delay-line detectors we can acquire alpha spectra (Am-241) and gamma spectra (Ba-133, Co-57 and Cd-109). The delay-line detectors can therefore be used to extract the charge information from both ion and gamma-ray interactions. Furthermore, standard charge-sensitive circuits yield high SNR pulses. The detectors and existing electronics can therefore be used to yield imaging instruments for neutron and gamma-rays, in the case of silicon. For CZT, we would prefer to utilize current sensing to be able to clearly isolate the effects of the various charge-transport non-idealities, the full realization of which awaits the fabrication of the custom-designed TIA chip.

Experience from the construction and operation of the STAR PXL detector

NASA Astrophysics Data System (ADS)

Greiner, L.; Anderssen, E. C.; Contin, G.; Schambach, J.; Silber, J.; Stezelberger, T.; Sun, X.; Szelezniak, M.; Vu, C.; Wieman, H. H.; Woodmansee, S.

2015-04-01

A new silicon based vertex detector called the Heavy Flavor Tracker (HFT) was installed at the Soleniodal Tracker At RHIC (STAR) experiment for the Relativistic Heavy Ion Collider (RHIC) 2014 heavy ion run to improve the vertex resolution and extend the measurement capabilities of STAR in the heavy flavor domain. The HFT consists of four concentric cylinders around the STAR interaction point composed of three different silicon detector technologies based on strips, pads and for the first time in an accelerator experiment CMOS monolithic active pixels (MAPS) . The two innermost layers at a radius of 2.8 cm and 8 cm from the beam line are constructed with 400 high resolution MAPS sensors arranged in 10-sensor ladders mounted on 10 thin carbon fiber sectors giving a total silicon area of 0.16 m2. Each sensor consists of a pixel array of nearly 1 million pixels with a pitch of 20.7 μm with column-level discriminators, zero-suppression circuitry and output buffer memory integrated into one silicon die with a sensitive area of ~ 3.8 cm2. The pixel (PXL) detector has a low power dissipation of 170 mW/cm2, which allows air cooling. This results in a global material budget of 0.5% radiation length per layer for detector used in this run. A novel mechanical approach to detector insertion allows for the installation and integration of the pixel sub detector within a 12 hour period during an on-going STAR run. The detector specifications, experience from the construction and operation, lessons learned and initial measurements of the PXL performance in the 200 GeV Au-Au run will be presented.

Advanced Silicon Detectors for High Energy Astrophysics Missions

NASA Technical Reports Server (NTRS)

Ricker, George

2005-01-01

A viewgraph presentation on the development of silicon detectors for high energy astrophysics missions is presented. The topics include: 1) Background: Motivation for Event-Driven CCD; 2) Report of Grant Activity; 3) Packaged EDCCD; 4) Measured X-ray Energy Resolution of the Gen1 EDCCDs Operated in "Conventional Mode"; and 5) EDCCD Gen 1.5-Lot 1 Planning.

A compact and modular x- and gamma-ray detector with a CsI scintillator and double-readout Silicon Drift Detectors

NASA Astrophysics Data System (ADS)

Campana, R.; Fuschino, F.; Labanti, C.; Marisaldi, M.; Amati, L.; Fiorini, M.; Uslenghi, M.; Baldazzi, G.; Bellutti, P.; Evangelista, Y.; Elmi, I.; Feroci, M.; Ficorella, F.; Frontera, F.; Picciotto, A.; Piemonte, C.; Rachevski, A.; Rashevskaya, I.; Rignanese, L. P.; Vacchi, A.; Zampa, G.; Zampa, N.; Zorzi, N.

2016-07-01

A future compact and modular X and gamma-ray spectrometer (XGS) has been designed and a series of proto- types have been developed and tested. The experiment envisages the use of CsI scintillator bars read out at both ends by single-cell 25 mm2 Silicon Drift Detectors. Digital algorithms are used to discriminate between events absorbed in the Silicon layer (lower energy X rays) and events absorbed in the scintillator crystal (higher energy X rays and -rays). The prototype characterization is shown and the modular design for future experiments with possible astrophysical applications (e.g. for the THESEUS mission proposed for the ESA M5 call) are discussed.

A 2D silicon detector array for quality assurance in small field dosimetry: DUO.

PubMed

Shukaili, Khalsa Al; Petasecca, Marco; Newall, Matthew; Espinoza, Anthony; Perevertaylo, Vladimir L; Corde, Stéphanie; Lerch, Michael; Rosenfeld, Anatoly B

2017-02-01

Nowadays, there are many different applications that use small fields in radiotherapy treatments. The dosimetry of small radiation fields is not trivial due to the problems associated with lateral disequilibrium and source occlusion and requires reliable quality assurance (QA). Ideally such a QA tool should provide high spatial resolution, minimal beam perturbation and real time fast measurements. Many different types of silicon diode arrays are used for QA in radiotherapy; however, their application in small filed dosimetry is limited, in part, due to a lack of spatial resolution. The Center of Medical Radiation Physics (CMRP) has developed a new generation of a monolithic silicon diode array detector that will be useful for small field dosimetry in SRS/SRT. The objective of this study is to characterize a monolithic silicon diode array designed for dosimetry QA in SRS/SRT named DUO that is arranged as two orthogonal 1D arrays with 0.2 mm pitch. DUO is two orthogonal 1D silicon detector arrays in a monolithic crystal. Each orthogonal array contains 253 small pixels with size 0.04 × 0.8 mm 2 and three central pixels are with a size of 0.18 × 0.18 mm 2 each. The detector pitch is 0.2 mm and total active area is 52 × 52 mm 2 . The response of the DUO silicon detector was characterized in terms of dose per pulse, percentage depth dose, and spatial resolution in a radiation field incorporating high gradients. Beam profile of small fields and output factors measured on a Varian 2100EX LINAC in a 6 MV radiation fields of square dimensions and sized from 0.5 × 0.5 cm 2 to 5 × 5 cm 2 . The DUO response was compared under the same conditions with EBT3 films and an ionization chamber. The DUO detector shows a dose per pulse dependence of 5% for a range of dose rates from 2.7 × 10 -4 to 1.2 × 10 -4 Gy/pulse and 23% when the rate is further reduced to 2.8 × 10 -5 Gy/pulse. The percentage depth dose measured to 25 cm depth in solid water phantom beyond the surface and for a field size of 10 × 10 cm 2 agrees with that measured using a Markus IC within 1.5%. The beam profiles in both X and Y orthogonal directions showed a good match with EBT3 film, where the FWHM agreed within 1% and penumbra widths within 0.5 mm. The effect of an air gap above the DUO detector has also been studied. The output factor for field sizes ranging from 0.5 × 0.5 cm 2 to 5 × 5 cm 2 measured by the DUO detector with a 0.5 mm air gap above silicon surface agrees with EBT3 film and MOSkin detectors within 1.8%. The CMRP's monolithic silicon detector array, DUO, is suitable for SRS/SRT dosimetry and QA because of its very high spatial resolution (0.2 mm) and real time operation. © 2016 American Association of Physicists in Medicine.

Junction-side illuminated silicon detector arrays

DOEpatents

Iwanczyk, Jan S.; Patt, Bradley E.; Tull, Carolyn

2004-03-30

A junction-side illuminated detector array of pixelated detectors is constructed on a silicon wafer. A junction contact on the front-side may cover the whole detector array, and may be used as an entrance window for light, x-ray, gamma ray and/or other particles. The back-side has an array of individual ohmic contact pixels. Each of the ohmic contact pixels on the back-side may be surrounded by a grid or a ring of junction separation implants. Effective pixel size may be changed by separately biasing different sections of the grid. A scintillator may be coupled directly to the entrance window while readout electronics may be coupled directly to the ohmic contact pixels. The detector array may be used as a radiation hardened detector for high-energy physics research or as avalanche imaging arrays.

The PHOBOS detector at RHIC

NASA Astrophysics Data System (ADS)

Back, B. B.; Baker, M. D.; Barton, D. S.; Basilev, S.; Baum, R.; Betts, R. R.; Białas, A.; Bindel, R.; Bogucki, W.; Budzanowski, A.; Busza, W.; Carroll, A.; Ceglia, M.; Chang, Y.-H.; Chen, A. E.; Coghen, T.; Connor, C.; Czyż, W.; Dabrowski, B.; Decowski, M. P.; Despet, M.; Fita, P.; Fitch, J.; Friedl, M.; Gałuszka, K.; Ganz, R.; Garcia, E.; George, N.; Godlewski, J.; Gomes, C.; Griesmayer, E.; Gulbrandsen, K.; Gushue, S.; Halik, J.; Halliwell, C.; Haridas, P.; Hayes, A.; Heintzelman, G. A.; Henderson, C.; Hollis, R.; Hołyński, R.; Hofman, D.; Holzman, B.; Johnson, E.; Kane, J.; Katzy, J.; Kita, W.; Kotuła, J.; Kraner, H.; Kucewicz, W.; Kulinich, P.; Law, C.; Lemler, M.; Ligocki, J.; Lin, W. T.; Manly, S.; McLeod, D.; Michałowski, J.; Mignerey, A.; Mülmenstädt, J.; Neal, M.; Nouicer, R.; Olszewski, A.; Pak, R.; Park, I. C.; Patel, M.; Pernegger, H.; Plesko, M.; Reed, C.; Remsberg, L. P.; Reuter, M.; Roland, C.; Roland, G.; Ross, D.; Rosenberg, L.; Ryan, J.; Sanzgiri, A.; Sarin, P.; Sawicki, P.; Scaduto, J.; Shea, J.; Sinacore, J.; Skulski, W.; Steadman, S. G.; Stephans, G. S. F.; Steinberg, P.; Straczek, A.; Stodulski, M.; Strek, M.; Stopa, Z.; Sukhanov, A.; Surowiecka, K.; Tang, J.-L.; Teng, R.; Trzupek, A.; Vale, C.; van Nieuwenhuizen, G. J.; Verdier, R.; Wadsworth, B.; Wolfs, F. L. H.; Wosiek, B.; Woźniak, K.; Wuosmaa, A. H.; Wysłouch, B.; Zalewski, K.; Żychowski, P.; Phobos Collaboration

2003-03-01

This manuscript contains a detailed description of the PHOBOS experiment as it is configured for the Year 2001 running period. It is capable of detecting charged particles over the full solid angle using a multiplicity detector and measuring identified charged particles near mid-rapidity in two spectrometer arms with opposite magnetic fields. Both of these components utilize silicon pad detectors for charged particle detection. The minimization of material between the collision vertex and the first layers of silicon detectors allows for the detection of charged particles with very low transverse momenta, which is a unique feature of the PHOBOS experiment. Additional detectors include a time-of-flight wall which extends the particle identification range for one spectrometer arm, as well as sets of scintillator paddle and Cherenkov detector arrays for event triggering and centrality selection.

Effects induced by high and low intensity laser plasma on SiC Schottky detectors

NASA Astrophysics Data System (ADS)

Sciuto, Antonella; Torrisi, Lorenzo; Cannavò, Antonino; Mazzillo, Massimo; Calcagno, Lucia

2018-01-01

Silicon-Carbide detectors are extensively employed as diagnostic devices in laser-generated plasma, allowing the simultaneous detection of photons, electrons and ions, when used in time-of-flight configuration. The plasma generated by high intensity laser (1016 W/cm2) producing high energy ions was characterized by SiC detector with a continuous front-electrode, and a very thick active depth, while SiC detector with an Interdigit front-electrode was used to measure the low energy ions of plasma generated by low intensity laser (1010 W/cm2). Information about ion energy, number of charge states, plasma temperature can be accurately obtained. However, laser exposure induces the formation of surface and bulk defects whose concentration increases with increasing the time to plasma exposure. The surface defects consist of clusters with a main size of the order of some microns and they modify the diode barrier height and the efficiency of the detector as checked by alpha spectrometry. The bulk defects, due to the energy loss of detected ions, strongly affect the electrical properties of the device, inducing a relevant increase of the leakage (reverse) current and decrease the forward current related to a deactivation of the dopant in the active detector region.

Investigations of a flat-panel detector for quality assurance measurements in ion beam therapy.

PubMed

Hartmann, Bernadette; Telsemeyer, Julia; Huber, Lucas; Ackermann, Benjamin; Jäkel, Oliver; Martišíková, Mária

2012-01-07

Increased accuracy in radiation delivery to a patient provided by scanning particle beams leads to high demands on quality assurance (QA). To meet the requirements, an extensive quality assurance programme has been implemented at the Heidelberg Ion Beam Therapy Center. Currently, high-resolution radiographic films are used for beam spot position measurements and homogeneity measurements for scanned fields. However, given that using this film type is time and equipment demanding, considerations have been made to replace the radiographic films in QA by another appropriate device. In this study, the suitability of the flat-panel detector RID 256 L based on amorphous silicon was investigated as an alternative method. The currently used radiographic films were taken as a reference. Investigations were carried out for proton and carbon ion beams. The detectors were irradiated simultaneously to allow for a direct comparison. The beam parameters (e.g. energy, focus, position) currently used in the daily QA procedures were applied. Evaluation of the measurements was performed using newly implemented automatic routines. The results for the flat-panel detector were compared to the standard radiographic films. Additionally, a field with intentionally decreased homogeneity was applied to test the detector's sensitivities toward possible incorrect scan parameters. For the beam position analyses, the flat-panel detector results showed good agreement with radiographic films. For both detector types, deviations between measured and planned spot distances were found to be below 1% (1 mm). In homogeneously irradiated fields, the flat-panel detector showed a better dose response homogeneity than the currently used radiographic film. Furthermore, the flat-panel detector is sensitive to field irregularities. The flat-panel detector was found to be an adequate replacement for the radiographic film in QA measurements. In addition, it saves time and equipment because no post-exposure treatment and no developer and darkroom facilities are needed.

Design and development of SiGe based near-infrared photodetectors

NASA Astrophysics Data System (ADS)

Zeller, John W.; Puri, Yash R.; Sood, Ashok K.; McMahon, Shane; Efsthadiatis, Harry; Haldar, Pradeep; Dhar, Nibir K.

2014-10-01

Near-infrared (NIR) sensors operating at room temperatures are critical for a variety of commercial and military applications including detecting mortar fire and muzzle flashes. SiGe technology offers a low-cost alternative to conventional IR sensor technologies such as InGaAs, InSb, and HgCdTe for developing NIR micro-sensors that will not require any cooling and can operate with high bandwidths and comparatively low dark currents. Since Ge has a larger thermal expansion coefficient than Si, tensile strain may be incorporated into detector devices during the growth process, enabling an extended operating wavelength range above 1600 nm. SiGe based pin photodetectors have advantages of high stability, low noise, and high responsivity compared to metal-semiconductor-metal (MSM) devices. We have developed a process flow and are fabricating SiGe detector devices on 12" (300 mm) silicon wafers in order to take advantage of high throughput, large-area leading-edge silicon based CMOS technology that provides small feature sizes with associated device cost/density scaling advantages. The fabrication of the detector devices is facilitated by a two-step growth process incorporating initial low temperature growth of Ge/SiGe to form a thin strain-relaxed layer, followed by high temperature growth to deposit a thicker absorbing film, and subsequent high temperature anneal. This growth process is designed to effectively reduce dark current and enhance detector performance by reducing the number of defects and threading dislocations which form recombination centers during the growth process. Various characterization techniques have been employed to determine the properties of the epitaxially deposited Ge/SiGe layers, and the corresponding results are discussed.

IR detector system based on high-Tc superconducting bolometer on SI membrane

NASA Astrophysics Data System (ADS)

Burnus, M.; Hefle, G.; Heidenblut, T.; Khrebtov, Igor A.; Laukemper, J.; Michalke, W.; Neff, H.; Schwierzi, B.; Semtchinova, O. K.; Steinbeiss, E.; Tkachenko, A. D.

1996-06-01

An infrared detector system based on high-T(subscript c) superconducting (HTS) membrane bolometer is reported. Superconducting transition-edge bolometer has been manufactured by silicon micromachining using an epitaxial GdBa(subscript 2)Cu(subscript 3)O(subscript 7-x) film on an epitaxial yttria- stabilized zirconia buffer layer on silicon. The active area of the element is 0.85 X 0.85 mm(superscript 2). The membrane thickness is 1 micrometers , those of the buffer layer and HTS films are 50 nm. The detectivity of bolometer, D(superscript *), is 3.8 X 10(superscript 9) cm Hz(superscript 1/2) W(superscript -1) at 84.5 K and within the frequency regime 100 < f < 300 Hz. The optical response is 580 V/W at time constant 0.4 ms. This is one of the fastest composite type HTS-bolometer ever reported. The bolometer is mounted on a metal N(subscript 2)-liquid cryostat, which fits the preamplifier. With the volume of N(subscript 2)-reservoir being 0.1 liter, the cryostat holds nitrogen for about 8 hours. Using only wire heater with constant current, the temperature stability of about 0.03 K/h is achieved. The detector system can be used in IR- Fourier spectroscopy at wavelengths longer than the typical operating range of semiconductor detectors (wavelength greater than about 20 micrometers ).

Gas electron multiplier (GEM) enhanced ionization chamber for fluorescence detector

NASA Astrophysics Data System (ADS)

Shaban, E. H.; Siddons, D. P.; Kuczewski, A.

2007-11-01

Detecting dilute elements in thin materials using extended X-ray absorption fluorescence spectroscopy (EXAFS) method requires a detector capable of high count rate and low noise. For detection of dilute elements, the fluorescence signal amplitude is often overcome by the presence of noise or background interference. In this paper we have used a gas ionization chamber enhanced by a gas electron multiplier (GEM) to amplify the primary ionized electrons due to the X-ray fluorescence of a dilute element. The GEM provides an essentially noise free electron amplification of the signal primary photoelectrons. It provides a larger output current prior to the electronic amplification, allowing a lower gain amplifier with lower electronic circuit noise contribution and hence improved S/ N ratio. In addition, since the signal is produced only by electrons, and not from ion motion, the detector is capable of recording rapidly changing signals. Iron in an arbitrary tree leaf was used as a test sample. This sample was measured using our detector SUBRSAB, and also with Lytle and passivated implanted planar silicon (PIPS) detectors. An improvement in the signal amplitude by a factor of 20 and a factor of 2 are recorded for the proposed detector with respect to the Lytle and PIPS detectors, respectively. Although the gain in signal over the PIPS detector is small for this detector, its lack of sensitivity to light and its low and temperature-independent dark current are further advantages.

Experimental evaluation of the resolution improvement provided by a silicon PET probe.

PubMed

Brzeziński, K; Oliver, J F; Gillam, J; Rafecas, M; Studen, A; Grkovski, M; Kagan, H; Smith, S; Llosá, G; Lacasta, C; Clinthorne, N H

2016-09-01

A high-resolution PET system, which incorporates a silicon detector probe into a conventional PET scanner, has been proposed to obtain increased image quality in a limited region of interest. Detailed simulation studies have previously shown that the additional probe information improves the spatial resolution of the reconstructed image and increases lesion detectability, with no cost to other image quality measures. The current study expands on the previous work by using a laboratory prototype of the silicon PET-probe system to examine the resolution improvement in an experimental setting. Two different versions of the probe prototype were assessed, both consisting of a back-to-back pair of 1-mm thick silicon pad detectors, one arranged in 32 × 16 arrays of 1.4 mm × 1.4 mm pixels and the other in 40 × 26 arrays of 1.0 mm × 1.0 mm pixels. Each detector was read out by a set of VATAGP7 ASICs and a custom-designed data acquisition board which allowed trigger and data interfacing with the PET scanner, itself consisting of BGO block detectors segmented into 8 × 6 arrays of 6 mm × 12 mm × 30 mm crystals. Limited-angle probe data was acquired from a group of Na-22 point-like sources in order to observe the maximum resolution achievable using the probe system. Data from a Derenzo-like resolution phantom was acquired, then scaled to obtain similar statistical quality as that of previous simulation studies. In this case, images were reconstructed using measurements of the PET ring alone and with the inclusion of the probe data. Images of the Na-22 source demonstrated a resolution of 1.5 mm FWHM in the probe data, the PET ring resolution being approximately 6 mm. Profiles taken through the image of the Derenzo-like phantom showed a clear increase in spatial resolution. Improvements in peak-to-valley ratios of 50% and 38%, in the 4.8 mm and 4.0 mm phantom features respectively, were observed, while previously unresolvable 3.2 mm features were brought to light by the addition of the probe. These results support the possibility of improving the image resolution of a clinical PET scanner using the silicon PET-probe.

A novel electron tunneling infrared detector

NASA Technical Reports Server (NTRS)

Kenny, T. W.; Waltman, S. B.; Reynolds, J. K.; Kaiser, W. J.

1990-01-01

The pneumatic infrared detector, originally developed by Golay in the late 1940s, uses the thermal expansion of one cm(exp 3) of xenon at room temperature to detect the heat deposited by infrared radiation. This detector was limited by thermal fluctuations within a 10 Hz bandwidth, but suffered from long thermal time constants and a fragile structure. Nevertheless, it represents the most sensitive room temperature detector currently available in the long wavelength infrared (LWIR). Fabrication of this type of detector on smaller scales has been limited by the lack of a suitably sensitive transducer. Researchers designed a detector based on this principle, but which is constructed entirely from micromachined silicon, and uses a vacuum tunneling transducer to detect the expansion of the trapped gas. Because this detector is fabricated using micromachining techniques, miniaturization and integration into one and two-dimensional arrays is feasible. The extreme sensitivity of vacuum tunneling to changes in electrode separation will allow a prototype of this detector to operate in the limit of thermal fluctuations over a 10 kHz bandwidth. A calculation of the predicted response and noise of the prototype is presented with the general formalism of thermal detectors. At present, most of the components of the prototype have been fabricated and tested independently. In particular, a characterization of the micromachined electron tunneling transducer has been carried out. The measured noise in the tunnel current is within a decade of the limit imposed by shot noise, and well below the requirements for the operation of an infrared detector with the predicted sensitivity. Assembly and characterization of the prototype infrared detector will be carried out promptly.

Optimization of the microcable and detector parameters towards low noise in the STS readout system

NASA Astrophysics Data System (ADS)

Kasinski, Krzysztof; Kleczek, Rafal; Schmidt, Christian J.

2015-09-01

Successful operation of the Silicon Tracking System requires charge measurement of each hit with equivalent noise charge lower than 1000 e- rms. Detector channels will not be identical, they will be constructed accordingly to the estimated occupancy, therefore for the readout electronics, detector system will exhibit various parameters. This paper presents the simulation-based study on the required microcable (trace width, dielectric material), detector (aluminum strip resistance) and external passives' (decoupling capacitors) parameters in the Silicon Tracking System. Studies will be performed using a front-end electronics (charge sensitive amplifier with shaper) designed for the power budget of 10 mA/channel.

Editorial

NASA Astrophysics Data System (ADS)

Bruzzi, Mara; Cartiglia, Nicolo; Pace, Emanuele; Talamonti, Cinzia

2015-10-01

The 10th edition of the International Conference on Radiation Effects on Semiconductor Materials, Detectors and Devices (RESMDD) was held in Florence, at Dipartimento di Fisica ed Astronomia on October 8-10, 2014. It has been aimed at discussing frontier research activities in several application fields as nuclear and particle physics, astrophysics, medical and solid-state physics. Main topics discussed in this conference concern performance of heavily irradiated silicon detectors, developments required for the luminosity upgrade of the Large Hadron Collider (HL-LHC), ultra-fast silicon detectors design and manufacturing, high-band gap semiconductor detectors, novel semiconductor-based devices for medical applications, radiation damage issues in semiconductors and related radiation-hardening technologies.

Energy-resolved CT imaging with a photon-counting silicon-strip detector

NASA Astrophysics Data System (ADS)

Persson, Mats; Huber, Ben; Karlsson, Staffan; Liu, Xuejin; Chen, Han; Xu, Cheng; Yveborg, Moa; Bornefalk, Hans; Danielsson, Mats

2014-03-01

Photon-counting detectors are promising candidates for use in the next generation of x-ray CT scanners. Among the foreseen benefits are higher spatial resolution, better trade-off between noise and dose, and energy discriminating capabilities. Silicon is an attractive detector material because of its low cost, mature manufacturing process and high hole mobility. However, it is sometimes claimed to be unsuitable for use in computed tomography because of its low absorption efficiency and high fraction of Compton scatter. The purpose of this work is to demonstrate that high-quality energy-resolved CT images can nonetheless be acquired with clinically realistic exposure parameters using a photon-counting silicon-strip detector with eight energy thresholds developed in our group. We use a single detector module, consisting of a linear array of 50 0.5 × 0.4 mm detector elements, to image a phantom in a table-top lab setup. The phantom consists of a plastic cylinder with circular inserts containing water, fat and aqueous solutions of calcium, iodine and gadolinium, in different concentrations. We use basis material decomposition to obtain water, calcium, iodine and gadolinium basis images and demonstrate that these basis images can be used to separate the different materials in the inserts. We also show results showing that the detector has potential for quantitative measurements of substance concentrations.

Spectral distribution of particle fluence in small field detectors and its implication on small field dosimetry.

PubMed

Benmakhlouf, Hamza; Andreo, Pedro

2017-02-01

Correction factors for the relative dosimetry of narrow megavoltage photon beams have recently been determined in several publications. These corrections are required because of the several small-field effects generally thought to be caused by the lack of lateral charged particle equilibrium (LCPE) in narrow beams. Correction factors for relative dosimetry are ultimately necessary to account for the fluence perturbation caused by the detector. For most small field detectors the perturbation depends on field size, resulting in large correction factors when the field size is decreased. In this work, electron and photon fluence differential in energy will be calculated within the radiation sensitive volume of a number of small field detectors for 6 MV linear accelerator beams. The calculated electron spectra will be used to determine electron fluence perturbation as a function of field size and its implication on small field dosimetry analyzed. Fluence spectra were calculated with the user code PenEasy, based on the PENELOPE Monte Carlo system. The detectors simulated were one liquid ionization chamber, two air ionization chambers, one diamond detector, and six silicon diodes, all manufactured either by PTW or IBA. The spectra were calculated for broad (10 cm × 10 cm) and narrow (0.5 cm × 0.5 cm) photon beams in order to investigate the field size influence on the fluence spectra and its resulting perturbation. The photon fluence spectra were used to analyze the impact of absorption and generation of photons. These will have a direct influence on the electrons generated in the detector radiation sensitive volume. The electron fluence spectra were used to quantify the perturbation effects and their relation to output correction factors. The photon fluence spectra obtained for all detectors were similar to the spectrum in water except for the shielded silicon diodes. The photon fluence in the latter group was strongly influenced, mostly in the low-energy region, by photoabsorption in the high-Z shielding material. For the ionization chambers and the diamond detector, the electron fluence spectra were found to be similar to that in water, for both field sizes. In contrast, electron spectra in the silicon diodes were much higher than that in water for both field sizes. The estimated perturbations of the fluence spectra for the silicon diodes were 11-21% for the large fields and 14-27% for the small fields. These perturbations are related to the atomic number, density and mean excitation energy (I-value) of silicon, as well as to the influence of the "extracameral"' components surrounding the detector sensitive volume. For most detectors the fluence perturbation was also found to increase when the field size was decreased, in consistency with the increased small-field effects observed for the smallest field sizes. The present work improves the understanding of small-field effects by relating output correction factors to spectral fluence perturbations in small field detectors. It is shown that the main reasons for the well-known small-field effects in silicon diodes are the high-Z and density of the "extracameral" detector components and the high I-value of silicon relative to that of water and diamond. Compared to these parameters, the density and atomic number of the radiation sensitive volume material play a less significant role. © 2016 American Association of Physicists in Medicine.

Mechanical Modulation of Phonon-Assisted Field Emission in a Silicon Nanomembrane Detector for Time-of-Flight Mass Spectrometry

PubMed Central

Park, Jonghoo; Blick, Robert H.

2016-01-01

We demonstrate mechanical modulation of phonon-assisted field emission in a free-standing silicon nanomembrane detector for time-of-flight mass spectrometry of proteins. The impacts of ion bombardment on the silicon nanomembrane have been explored in both mechanical and electrical points of view. Locally elevated lattice temperature in the silicon nanomembrane, resulting from the transduction of ion kinetic energy into thermal energy through the ion bombardment, induces not only phonon-assisted field emission but also a mechanical vibration in the silicon nanomembrane. The coupling of these mechanical and electrical phenomenon leads to mechanical modulation of phonon-assisted field emission. The thermal energy relaxation through mechanical vibration in addition to the lateral heat conduction and field emission in the silicon nanomembrane offers effective cooling of the nanomembrane, thereby allowing high resolution mass analysis. PMID:26861329

TES-Based Light Detectors for the CRESST Direct Dark Matter Search

NASA Astrophysics Data System (ADS)

Rothe, J.; Angloher, G.; Bauer, P.; Bento, A.; Bucci, C.; Canonica, L.; D'Addabbo, A.; Defay, X.; Erb, A.; Feilitzsch, F. v.; Ferreiro Iachellini, N.; Gorla, P.; Gütlein, A.; Hauff, D.; Jochum, J.; Kiefer, M.; Kluck, H.; Kraus, H.; Lanfranchi, J.-C.; Langenkämper, A.; Loebell, J.; Mancuso, M.; Mondragon, E.; Münster, A.; Pagliarone, C.; Petricca, F.; Potzel, W.; Pröbst, F.; Puig, R.; Reindl, F.; Schäffner, K.; Schieck, J.; Schipperges, V.; Schönert, S.; Seidel, W.; Stahlberg, M.; Stodolsky, L.; Strandhagen, C.; Strauss, R.; Tanzke, A.; Trinh Thi, H. H.; Türkoğlu, C.; Ulrich, A.; Usherov, I.; Wawoczny, S.; Willers, M.; Wüstrich, M.

2018-05-01

The CRESST experiment uses cryogenic detectors based on transition-edge sensors to search for dark matter interactions. Each detector module consists of a scintillating CaWO_4 crystal and a silicon-on-sapphire (SOS) light detector which operate in coincidence (phonon-light technique). The 40-mm-diameter SOS disks (2 g mass) used in the data taking campaign of CRESST-II Phase 2 (2014-2016) reached absolute baseline resolutions of σ = 4-7 eV. This is the best performance reported for cryogenic light detectors of this size. Newly developed silicon beaker light detectors (4 cm height, 4 cm diameter, 6 g mass), which cover a large fraction of the target crystal surface, have achieved a baseline resolution of σ = 5.8 eV. First results of further improved light detectors developed for the ongoing low-threshold CRESST-III experiment are presented.

Detector and energy analyzer for energetic-hydrogen in beams and plasmas

DOEpatents

Bastasz, Robert J.; Hughes, Robert C.; Wampler, William R.

1988-01-01

A detector for detecting energetic hydrogen ions and atoms ranging in energy from about 1 eV up to 1 keV in an evacuated environment includes a Schottky diode with a palladium or palladium-alloy gate metal applied to a silicondioxide layer on an n-silicon substrate. An array of the energetic-hydrogen detectors having a range of energy sensitivities form a plasma energy analyzer having a rapid response time and a sensitivity for measuring fluxes of energetic hydrogen. The detector is sensitive to hydrogen and its isotopes but is insensitive to non-hydrogenic particles. The array of energetic-hydrogen detectors can be formed on a single silicon chip, with thin-film layers of gold metal applied in various thicknesses to successive detectors in the array. The gold layers serve as particle energy-filters so that each detector is sensitive to a different range of hydrogen energies.

Development of slew-rate-limited time-over-threshold (ToT) ASIC for a multi-channel silicon-based ion detector

NASA Astrophysics Data System (ADS)

Uenomachi, M.; Orita, T.; Shimazoe, K.; Takahashi, H.; Ikeda, H.; Tsujita, K.; Sekiba, D.

2018-01-01

High-resolution Elastic Recoil Detection Analysis (HERDA), which consists of a 90o sector magnetic spectrometer and a position-sensitive detector (PSD), is a method of quantitative hydrogen analysis. In order to increase sensitivity, a HERDA system using a multi-channel silicon-based ion detector has been developed. Here, as a parallel and fast readout circuit from a multi-channel silicon-based ion detector, a slew-rate-limited time-over-threshold (ToT) application-specific integrated circuit (ASIC) was designed, and a new slew-rate-limited ToT method is proposed. The designed ASIC has 48 channels and each channel consists of a preamplifier, a slew-rate-limited shaping amplifier, which makes ToT response linear, and a comparator. The measured equivalent noise charges (ENCs) of the preamplifier, the shaper, and the ToT on no detector capacitance were 253±21, 343±46, and 560±56 electrons RMS, respectively. The spectra from a 241Am source measured using a slew-rate-limited ToT ASIC are also reported.

Silicon Drift Detector response function for PIXE spectra fitting

NASA Astrophysics Data System (ADS)

Calzolai, G.; Tapinassi, S.; Chiari, M.; Giannoni, M.; Nava, S.; Pazzi, G.; Lucarelli, F.

2018-02-01

The correct determination of the X-ray peak areas in PIXE spectra by fitting with a computer program depends crucially on accurate parameterization of the detector peak response function. In the Guelph PIXE software package, GUPIXWin, one of the most used PIXE spectra analysis code, the response of a semiconductor detector to monochromatic X-ray radiation is described by a linear combination of several analytical functions: a Gaussian profile for the X-ray line itself, and additional tail contributions (exponential tails and step functions) on the low-energy side of the X-ray line to describe incomplete charge collection effects. The literature on the spectral response of silicon X-ray detectors for PIXE applications is rather scarce, in particular data for Silicon Drift Detectors (SDD) and for a large range of X-ray energies are missing. Using a set of analytical functions, the SDD response functions were satisfactorily reproduced for the X-ray energy range 1-15 keV. The behaviour of the parameters involved in the SDD tailing functions with X-ray energy is described by simple polynomial functions, which permit an easy implementation in PIXE spectra fitting codes.

Anomalous optical surface absorption in nominally pure silicon samples at 1550 nm

NASA Astrophysics Data System (ADS)

Bell, Angus S.; Steinlechner, Jessica; Martin, Iain W.; Craig, Kieran; Cunningham, William; Rowan, Sheila; Hough, Jim; Schnabel, Roman; Khalaidovski, Alexander

2017-10-01

The announcement of the direct detection of gravitational waves (GW) by the LIGO and Virgo collaboration in February 2016 has removed any uncertainty around the possibility of GW astronomy. It has demonstrated that future detectors with sensitivities ten times greater than the Advanced LIGO detectors would see thousands of events per year. Many proposals for such future interferometric GW detectors assume the use of silicon test masses. Silicon has low mechanical loss at low temperatures, which leads to low displacement noise for a suspended interferometer mirror. In addition to the low mechanical loss, it is a requirement that the test masses have a low optical loss. Measurements at 1550 nm have indicated that material with a low enough bulk absorption is available; however there have been suggestions that this low absorption material has a surface absorption of  >100 ppm which could preclude its use in future cryogenic detectors. We show in this paper that this surface loss is not intrinsic but is likely to be a result of particular polishing techniques and can be removed or avoided by the correct polishing procedure. This is an important step towards high gravitational wave detection rates in silicon based instruments.

Test study of boron nitride as a new detector material for dosimetry in high-energy photon beams.

PubMed

Poppinga, D; Halbur, J; Lemmer, S; Delfs, B; Harder, D; Looe, H K; Poppe, B

2017-09-05

The aim of this test study is to check whether boron nitride (BN) might be applied as a detector material in high-energy photon-beam dosimetry. Boron nitride exists in various crystalline forms. Hexagonal boron nitride (h-BN) possesses high mobility of the electrons and holes as well as a high volume resistivity, so that ionizing radiation in the clinical range of the dose rate can be expected to produce a measurable electrical current at low background current. Due to the low atomic numbers of its constituents, its density (2.0 g cm -3 ) similar to silicon and its commercial availability, h-BN appears as possibly suitable for the dosimetry of ionizing radiation. Five h-BN plates were contacted to triaxial cables, and the detector current was measured in a solid-state ionization chamber circuit at an applied voltage of 50 V. Basic dosimetric properties such as formation by pre-irradiation, sensitivity, reproducibility, linearity and temporal resolution were measured with 6 MV photon irradiation. Depth dose curves at quadratic field sizes of 10 cm and 40 cm were measured and compared to ionization chamber measurements. After a pre-irradiation with 6 Gy, the devices show a stable current signal at a given dose rate. The current-voltage characteristic up to 400 V shows an increase in the collection efficiency with the voltage. The time-resolved detector current behavior during beam interrupts is comparable to diamond material, and the background current is negligible. The measured percentage depth dose curves at 10 cm  ×  10 cm field size agreed with the results of ionization chamber measurements within  ±2%. This is a first study of boron nitride as a detector material for high-energy photon radiation. By current measurements on solid ionization chambers made from boron nitride chips we could demonstrate that boron nitride is in principle suitable as a detector material for high-energy photon-beam dosimetry.

Test study of boron nitride as a new detector material for dosimetry in high-energy photon beams

NASA Astrophysics Data System (ADS)

Poppinga, D.; Halbur, J.; Lemmer, S.; Delfs, B.; Harder, D.; Looe, H. K.; Poppe, B.

2017-09-01

The aim of this test study is to check whether boron nitride (BN) might be applied as a detector material in high-energy photon-beam dosimetry. Boron nitride exists in various crystalline forms. Hexagonal boron nitride (h-BN) possesses high mobility of the electrons and holes as well as a high volume resistivity, so that ionizing radiation in the clinical range of the dose rate can be expected to produce a measurable electrical current at low background current. Due to the low atomic numbers of its constituents, its density (2.0 g cm-3) similar to silicon and its commercial availability, h-BN appears as possibly suitable for the dosimetry of ionizing radiation. Five h-BN plates were contacted to triaxial cables, and the detector current was measured in a solid-state ionization chamber circuit at an applied voltage of 50 V. Basic dosimetric properties such as formation by pre-irradiation, sensitivity, reproducibility, linearity and temporal resolution were measured with 6 MV photon irradiation. Depth dose curves at quadratic field sizes of 10 cm and 40 cm were measured and compared to ionization chamber measurements. After a pre-irradiation with 6 Gy, the devices show a stable current signal at a given dose rate. The current-voltage characteristic up to 400 V shows an increase in the collection efficiency with the voltage. The time-resolved detector current behavior during beam interrupts is comparable to diamond material, and the background current is negligible. The measured percentage depth dose curves at 10 cm  ×  10 cm field size agreed with the results of ionization chamber measurements within  ±2%. This is a first study of boron nitride as a detector material for high-energy photon radiation. By current measurements on solid ionization chambers made from boron nitride chips we could demonstrate that boron nitride is in principle suitable as a detector material for high-energy photon-beam dosimetry.

Development of semiconductor tracking: The future linear collider case

NASA Astrophysics Data System (ADS)

Savoy-Navarro, Aurore

2011-04-01

An active R&D on silicon tracking for the linear collider, SiLC, is pursued since several years to develop the new generation of large area silicon trackers for the future linear collider(s). The R&D objectives on new sensors, new front end processing of the signal, and the related mechanical and integration challenges for building such large detectors within the proposed detector concepts are described. Synergies and differences with the LHC construction and upgrades are explained. The differences between the linear collider projects, namely the international linear collider, ILC, and the compact linear collider, CLIC, are discussed as well. Two final objectives are presented for the construction of this important sub-detector for the future linear collider experiments: a relatively short term design based on micro-strips combined or not with a gaseous central tracker and a longer term design based on an all-pixel tracker.The R&D objectives on sensors include single sided micro-strips as baseline for the shorter term with the strips from large wafers (at least 6 in), 200 μm thick, 50 μm pitch and the edgeless and alignment friendly options. This work is conducted by SiLC in collaboration with three technical research centers in Italy, Finland, and Spain and HPK. SiLC is studied as well, using advanced Si sensor technologies for higher granularity trackers especially short strips and pixels all based on 3D technology. New Deep Sub-Micron CMOS mix mode (analog and digital) FE and readout electronics are developed to fully process the detector signals currently adapted to the ILC cycle. It is a high-level processing and a fully programmable ASIC; highly fault tolerant. In its latest version, handling 128 channels will equip these next coming years larger size silicon tracking prototypes at test beams. Connection of the FEE chip on the silicon detector especially in the strip case is a major issue. Very preliminary results with inline pitch adapter based on wiring were just achieved. Bump-bonding or 3D vertical interconnect is the other SiLC R&D objective. The goal is to simplify the overall architecture and decrease the material budget of these devices. Three tracking concepts are briefly discussed, two of which are part of the ILC Letter of Intent of the ILD and SiD detector concepts. These last years, SiLC successfully performed beam tests to experience and test these R&D lines.

Synthesis and electronic properties of nanophase semiconductor materials

NASA Astrophysics Data System (ADS)

Sailor, Michael J.

1993-05-01

The objective of the research effort is to understand and learn to control the morphologic and electronic properties of electrodeposited nanophase semiconductors. The initial work has focused on electrodeposition of nanophase CdSe, using a sequential monolayer deposition technique that we are developing. We are currently extending the synthesis phase of this project into silicon, silicon carbide, and phosphor materials. This work also encompasses studying semiconductor electrodeposition into materials with restricted dimensions, such as microporous alumina and porous silicon membranes. By growing films with very small grain sizes, we hope to produce and study materials that display unusual electronic or luminescent effects. We are primarily interested in the electronic properties of the II-VI and group IV materials, for potential applications in nanoscale electronics and optical detector technologies. The phosphors are being studied for their potential as efficient high-resolution display materials.

Tests of UFXC32k chip with CdTe pixel detector

NASA Astrophysics Data System (ADS)

Maj, P.; Taguchi, T.; Nakaye, Y.

2018-02-01

The paper presents the performance of the UFXC32K—a hybrid pixel detector readout chip working with CdTe detectors. The UFXC32K has a pixel pitch of 75 μm and can cope with both input signal polarities. This functionality allows operating with widely used silicon sensors collecting holes and CdTe sensors collecting electrons. This article describes the chip focusing on solving the issues connected to high-Z sensor material, namely high leakage currents, slow charge collection time and thick material resulting in increased charge-sharring effects. The measurements were conducted with higher X-ray energies including 17.4 keV from molybdenum. Conclusions drawn inside the paper show the UFXC32K's usability for CdTe sensors in high X-ray energy applications.

CMOS-compatible plenoptic detector for LED lighting applications.

PubMed

Neumann, Alexander; Ghasemi, Javad; Nezhadbadeh, Shima; Nie, Xiangyu; Zarkesh-Ha, Payman; Brueck, S R J

2015-09-07

LED lighting systems with large color gamuts, with multiple LEDs spanning the visible spectrum, offer the potential of increased lighting efficiency, improved human health and productivity, and visible light communications addressing the explosive growth in wireless communications. The control of this "smart lighting system" requires a silicon-integrated-circuit-compatible, visible, plenoptic (angle and wavelength) detector. A detector element, based on an offset-grating-coupled dielectric waveguide structure and a silicon photodetector, is demonstrated with an angular resolution of less than 1° and a wavelength resolution of less than 5 nm.

Technical instrumentation R&D for ILD SiW ECAL large scale device

NASA Astrophysics Data System (ADS)

Balagura, V.

2018-03-01

Calorimeters with silicon detectors have many unique features and are proposed for several world-leading experiments. We describe the R&D program of the large scale detector element with up to 12 000 readout channels for the International Large Detector (ILD) at the future e+e‑ ILC collider. The program is focused on the readout front-end electronics embedded inside the calorimeter. The first part with 2 000 channels and two small silicon sensors has already been constructed, the full prototype is planned for the beginning of 2018.

Thermal and hydrodynamic studies for micro-channel cooling for large area silicon sensors in high energy physics experiments

NASA Astrophysics Data System (ADS)

Flaschel, Nils; Ariza, Dario; Díez, Sergio; Gerboles, Marta; Gregor, Ingrid-Maria; Jorda, Xavier; Mas, Roser; Quirion, David; Tackmann, Kerstin; Ullan, Miguel

2017-08-01

Micro-channel cooling initially aiming at small-sized high-power integrated circuits is being transferred to the field of high energy physics. Today's prospects of micro-fabricating silicon opens a door to a more direct cooling of detector modules. The challenge in high energy physics is to save material in the detector construction and to cool large areas. In this paper, we are investigating micro-channel cooling as a candidate for a future cooling system for silicon detectors in a generic research and development approach. The work presented in this paper includes the production and the hydrodynamic and thermal testing of a micro-channel equipped prototype optimized to achieve a homogeneous flow distribution. Furthermore, the device was simulated using finite element methods.

Quantum key distribution with 1.25 Gbps clock synchronization.

PubMed

Bienfang, J; Gross, A; Mink, A; Hershman, B; Nakassis, A; Tang, X; Lu, R; Su, D; Clark, Charles; Williams, Carl; Hagley, E; Wen, Jesse

2004-05-03

We have demonstrated the exchange of sifted quantum cryptographic key over a 730 meter free-space link at rates of up to 1.0 Mbps, two orders of magnitude faster than previously reported results. A classical channel at 1550 nm operates in parallel with a quantum channel at 845 nm. Clock recovery techniques on the classical channel at 1.25 Gbps enable quantum transmission at up to the clock rate. System performance is currently limited by the timing resolution of our silicon avalanche photodiode detectors. With improved detector resolution, our technique will yield another order of magnitude increase in performance, with existing technology.

Extended short wavelength infrared HgCdTe detectors on silicon substrates

NASA Astrophysics Data System (ADS)

Park, J. H.; Hansel, D.; Mukhortova, A.; Chang, Y.; Kodama, R.; Zhao, J.; Velicu, S.; Aqariden, F.

2016-09-01

We report high-quality n-type extended short wavelength infrared (eSWIR) HgCdTe (cutoff wavelength 2.59 μm at 77 K) layers grown on three-inch diameter CdTe/Si substrates by molecular beam epitaxy (MBE). This material is used to fabricate test diodes and arrays with a planar device architecture using arsenic implantation to achieve p-type doping. We use different variations of a test structure with a guarded design to compensate for the lateral leakage current of traditional test diodes. These test diodes with guarded arrays characterize the electrical performance of the active 640 × 512 format, 15 μm pitch detector array.

Mechanical Designs and Developement of Advanced ACT: A Transfomative Upgrade to the ACTPol Receiver on the Atacama Cosmology Telescope.

NASA Astrophysics Data System (ADS)

Ward, Jonathan; Advanced ACT Collaboration, NASA Space Technology Research Fellowship

2017-06-01

The Atacama Cosmology Telescope is a six-meter diameter telescope located at 17,000 feet (5,200 meters) on Cerro Toco in the Andes Mountains of northern Chile. The next generation Advanced ACT (AdvACT) experiment is currently underway and will consist of three multichroic TES bolometer arrays operating together, totaling 5800 detectors on the sky. Each array will be sensitive to two frequency bands: a high frequency (HF) array at 150 and 230 GHz, two middle frequency (MF) arrays at 90 and 150 GHz, and a low frequency (LF) array at 28 and 41 GHz. The AdACT detector arrays will feature a revamped design when compared to ACTPol, including a transition to 150mm wafers equipped with multichroic pixels, allowing for a more densely packed focal plane. Each set of detectors consists of a feedhorn array of stacked silicon wafers which form a corrugated profile leading to each pixel. This is then followed by a four-piece detector stack assembly of silicon wafers which includes a waveguide interface plate, detector wafer, backshort cavity plate, and backshort cap. Each array is housed in a custom designed structure manufactured out of gold-plated, high purity copper. In addition to the detector array assembly, the array package also encloses the majority of our readout electronics. We present the full mechanical design of the AdvACT HF and MF detector array packages along with a detailed look at the detector array assemblies. We also highlight the use of continuously rotating warm half-wave plates (HWPs) at the front of the AdvACT receiver. We review the design of the rotation system and also early pipeline data analysis results. This experiment will also make use of extensive hardware and software previously developed for ACT, which will be modified to incorporate the new AdvACT instruments. Therefore, we discuss the integration of all AdvACT instruments with pre-existing ACTPol infrastructure.

The Belle II DEPFET pixel detector

NASA Astrophysics Data System (ADS)

Moser, Hans-Günther; DEPFET Collaboration

2016-09-01

The Belle II experiment at KEK (Tsukuba, Japan) will explore heavy flavour physics (B, charm and tau) at the starting of 2018 with unprecedented precision. Charged particles are tracked by a two-layer DEPFET pixel device (PXD), a four-layer silicon strip detector (SVD) and the central drift chamber (CDC). The PXD will consist of two layers at radii of 14 mm and 22 mm with 8 and 12 ladders, respectively. The pixel sizes will vary, between 50 μm×(55-60) μm in the first layer and between 50 μm×(70-85) μm in the second layer, to optimize the charge sharing efficiency. These innermost layers have to cope with high background occupancy, high radiation and must have minimal material to reduce multiple scattering. These challenges are met using the DEPFET technology. Each pixel is a FET integrated on a fully depleted silicon bulk. The signal charge collected in the 'internal gate' modulates the FET current resulting in a first stage amplification and therefore very low noise. This allows very thin sensors (75 μm) reducing the overall material budget of the detector (0.21% X0). Four fold multiplexing of the column parallel readout allows read out a full frame of the pixel matrix in only 20 μs while keeping the power consumption low enough for air cooling. Only the active electronics outside the detector acceptance has to be cooled actively with a two phase CO2 system. Furthermore the DEPFET technology offers the unique feature of an electronic shutter which allows the detector to operate efficiently in the continuous injection mode of superKEKB.

Assembly and evaluation of a pyroelectric detector bonded to vertically aligned multiwalled carbon nanotubes over thin silicon.

PubMed

Theocharous, E; Theocharous, S P; Lehman, J H

2013-11-20

A novel pyroelectric detector consisting of a vertically aligned nanotube array on thin silicon (VANTA/Si) bonded to a 60 μm thick crystal of LiTaO₃ has been fabricated. The performance of the VANTA/Si-coated pyroelectric detector was evaluated using National Physical Laboratory's (NPL's) detector-characterization facilities. The relative spectral responsivity of the detector was found to be spectrally flat in the 0.8-24 μm wavelength range, in agreement with directional-hemispherical reflectance measurements of witness samples of the VANTA. The spatial uniformity of response of the test detector exhibited good uniformity, although the nonuniformity increased with increasing modulation frequency. The nonuniformity may be assigned either to the dimensions of the VANTA or the continuity of the bond between the VANTA/Si coating and the pyroelectric crystal substrate. The test detector exhibited a small superlinear response, which is similar to that of pyroelectric detectors coated with good quality gold-black coatings.

Electronics of the data acquisition system of the DANSS detector based on silicon photomultipliers

NASA Astrophysics Data System (ADS)

Svirida, D.

2018-01-01

The electronics of the data acquisition system based on silicon photomultipliers is briefly described. The elements and modules of the system were designed and constructed at ITEP especially for the DANSS detector. Examples of digitized signals obtained with the presented electronic modules and selected results on processing of the DANSS engineering data-taking run in spring 2016 are given.

Monolithic active pixel radiation detector with shielding techniques

DOEpatents

Deptuch, Grzegorz W.

2018-03-20

A monolithic active pixel radiation detector including a method of fabricating thereof. The disclosed radiation detector can include a substrate comprising a silicon layer upon which electronics are configured. A plurality of channels can be formed on the silicon layer, wherein the plurality of channels are connected to sources of signals located in a bulk part of the substrate, and wherein the signals flow through electrically conducting vias established in an isolation oxide on the substrate. One or more nested wells can be configured from the substrate, wherein the nested wells assist in collecting charge carriers released in interaction with radiation and wherein the nested wells further separate the electronics from the sensing portion of the detector substrate. The detector can also be configured according to a thick SOA method of fabrication.

Monolithic active pixel radiation detector with shielding techniques

DOEpatents

Deptuch, Grzegorz W.

2016-09-06

A monolithic active pixel radiation detector including a method of fabricating thereof. The disclosed radiation detector can include a substrate comprising a silicon layer upon which electronics are configured. A plurality of channels can be formed on the silicon layer, wherein the plurality of channels are connected to sources of signals located in a bulk part of the substrate, and wherein the signals flow through electrically conducting vias established in an isolation oxide on the substrate. One or more nested wells can be configured from the substrate, wherein the nested wells assist in collecting charge carriers released in interaction with radiation and wherein the nested wells further separate the electronics from the sensing portion of the detector substrate. The detector can also be configured according to a thick SOA method of fabrication.

Power monitoring in space nuclear reactors using silicon carbide radiation detectors

NASA Technical Reports Server (NTRS)

Ruddy, Frank H.; Patel, Jagdish U.; Williams, John G.

2005-01-01

Space reactor power monitors based on silicon carbide (SiC) semiconductor neutron detectors are proposed. Detection of fast leakage neutrons using SiC detectors in ex-core locations could be used to determine reactor power: Neutron fluxes, gamma-ray dose rates and ambient temperatures have been calculated as a function of distance from the reactor core, and the feasibility of power monitoring with SiC detectors has been evaluated at several ex-core locations. Arrays of SiC diodes can be configured to provide the required count rates to monitor reactor power from startup to full power Due to their resistance to temperature and the effects of neutron and gamma-ray exposure, SiC detectors can be expected to provide power monitoring information for the fill mission of a space reactor.

The Belle II Silicon Vertex Detector

NASA Astrophysics Data System (ADS)

Friedl, M.; Ackermann, K.; Aihara, H.; Aziz, T.; Bergauer, T.; Bozek, A.; Campbell, A.; Dingfelder, J.; Drasal, Z.; Frankenberger, A.; Gadow, K.; Gfall, I.; Haba, J.; Hara, K.; Hara, T.; Higuchi, T.; Himori, S.; Irmler, C.; Ishikawa, A.; Joo, C.; Kah, D. H.; Kang, K. H.; Kato, E.; Kiesling, C.; Kodys, P.; Kohriki, T.; Koike, S.; Kvasnicka, P.; Marinas, C.; Mayekar, S. N.; Mibe, T.; Mohanty, G. B.; Moll, A.; Negishi, K.; Nakayama, H.; Natkaniec, Z.; Niebuhr, C.; Onuki, Y.; Ostrowicz, W.; Park, H.; Rao, K. K.; Ritter, M.; Rozanska, M.; Saito, T.; Sakai, K.; Sato, N.; Schmid, S.; Schnell, M.; Shimizu, N.; Steininger, H.; Tanaka, S.; Tanida, K.; Taylor, G.; Tsuboyama, T.; Ueno, K.; Uozumi, S.; Ushiroda, Y.; Valentan, M.; Yamamoto, H.

2013-12-01

The KEKB machine and the Belle experiment in Tsukuba (Japan) are now undergoing an upgrade, leading to an ultimate luminosity of 8×1035 cm-2 s-1 in order to measure rare decays in the B system with high statistics. The previous vertex detector cannot cope with this 40-fold increase of luminosity and thus needs to be replaced. Belle II will be equipped with a two-layer Pixel Detector surrounding the beam pipe, and four layers of double-sided silicon strip sensors at higher radii than the old detector. The Silicon Vertex Detector (SVD) will have a total sensitive area of 1.13 m2 and 223,744 channels-twice as many as its predecessor. All silicon sensors will be made from 150 mm wafers in order to maximize their size and thus to reduce the relative contribution of the support structure. The forward part has slanted sensors of trapezoidal shape to improve the measurement precision and to minimize the amount of material as seen by particles from the vertex. Fast-shaping front-end amplifiers will be used in conjunction with an online hit time reconstruction algorithm in order to reduce the occupancy to the level of a few percent at most. A novel “Origami” chip-on-sensor scheme is used to minimize both the distance between strips and amplifier (thus reducing the electronic noise) as well as the overall material budget. This report gives an overview on the status of the Belle II SVD and its components, including sensors, front-end detector ladders, mechanics, cooling and the readout electronics.

Beam test of CSES silicon strip detector module

NASA Astrophysics Data System (ADS)

Zhang, Da-Li; Lu, Hong; Wang, Huan-Yu; Li, Xin-Qiao; Xu, Yan-Bing; An, Zheng-Hua; Yu, Xiao-xia; Wang, Hui; Shi, Feng; Wang, Ping; Zhao, Xiao-Yun

2017-05-01

The silicon-strip tracker of the China Seismo-Electromagnetic Satellite (CSES) consists of two double-sided silicon strip detectors (DSSDs) which provide incident particle tracking information. A low-noise analog ASIC VA140 was used in this study for DSSD signal readout. A beam test on the DSSD module was performed at the Beijing Test Beam Facility of the Beijing Electron Positron Collider (BEPC) using a 400-800 MeV/c proton beam. The pedestal analysis results, RMSE noise, gain correction, and intensity distribution of incident particles of the DSSD module are presented. Supported by the XXX Civil Space Programme

Front End Spectroscopy ASIC for Germanium Detectors

NASA Astrophysics Data System (ADS)

Wulf, Eric

Large-area, tracking, semiconductor detectors with excellent spatial and spectral resolution enable exciting new access to soft (0.2-5 MeV) gamma-ray astrophysics. The improvements from semiconductor tracking detectors come with the burden of high density of strips and/or pixels that require high-density, low-power, spectroscopy quality readout electronics. CMOS ASIC technologies are a natural fit to this requirement and have led to high-quality readout systems for all current semiconducting tracking detectors except for germanium detectors. The Compton Spectrometer and Imager (COSI), formerly NCT, at University of California Berkeley and the Gamma-Ray Imager/Polarimeter for Solar flares (GRIPS) at Goddard Space Flight Center utilize germanium cross-strip detectors and are on the forefront of NASA's Compton telescope research with funded missions of long duration balloon flights. The development of a readout ASIC for germanium detectors would allow COSI to replace their discrete electronics readout and would enable the proposed Gamma-Ray Explorer (GRX) mission utilizing germanium strip-detectors. We propose a 3-year program to develop and test a germanium readout ASIC to TRL 5 and to integrate the ASIC readout onto a COSI detector allowing a TRL 6 demonstration for the following COSI balloon flight. Our group at NRL led a program, sponsored by another government agency, to produce and integrate a cross-strip silicon detector ASIC, designed and fabricated by Dr. De Geronimo at Brookhaven National Laboratory. The ASIC was designed to handle the large (>30 pF) capacitance of three 10 cm^2 detectors daisy-chained together. The front-end preamplifier, selectable inverter, shaping times, and gains make this ASIC compatible with a germanium cross-strip detector as well. We therefore have the opportunity and expertise to leverage the previous investment in the silicon ASIC for a new mission. A germanium strip detector ASIC will also require precise timing of the signals at the anode and cathode of the device to allow the depth of the interaction within the crystal to be determined. Dr. De Geronimo has developed similar timing circuits for CZT detector ASICs. Furthermore, the timing circuitry of the ASIC is at the very end of the analog section, simplifying and mitigating risks in the redesign. In the first year, we propose to tweak the gain settings and to add timing to the silicon ASIC to match the requirements of a germanium detector. The design specifications of the ASIC will include advice from our collaborators Dr. Boggs from COSI and Dr. Shih from GRIPS. By using a master ASIC designer to integrate his proven front-end and back-end with only minor modifications, we are maximizing the probability of success. NRL has a commercial cross-strip germanium detector with 30 pF of capacitance per strip, including the flex circuit from the detector to the outside of the cryostat. The COSI and GRIPS detectors have a similar capacitance per strip on the outside of their mechanically cooled cryostat. The second year of the program will be devoted to testing the newly fabricated germanium cross-strip ASIC with the NRL germanium detector. At the end of the second year, NASA will have a TRL 5 ASIC for germanium detectors, allowing future missions, including COSI, GRX, and GRIPS, to operate within their thermal and electrical envelopes. At the end of the third year, a detector on COSI will be instrumented with the new ASIC allowing for a TRL 6 demonstration during the following COSI balloon flight.

Radiation dose reduction in chest radiography using a flat-panel amorphous silicon detector.

PubMed

Hosch, W P; Fink, C; Radeleff, B; kampschulte a, A; Kauffmann, G W; Hansmann, J

2002-10-01

The aim of this study was to evaluate the image quality and the potential for radiation dose reduction with a digital flat-panel amorphous silicon detector radiography system. Using flat-panel technology, radiographs of an anthropomorphic thorax phantom were taken with a range of technical parameters (125kV, 200mA and 5, 4, 3.2, 2, 1, 0.5, and 0.25mAs) which were equivalent to a radiation dose of 332, 263, 209, 127, 58.7, 29, and 14 microGy, respectively. These images were compared to radiographs obtained by a conventional film-screen radiography system at 125kV, 200mA and 5mAs (equivalent to 252 microGy) which served as reference. Three observers evaluated independently the visibility of simulated rounded lesions and anatomical structures, comparing printed films from the flat-panel amorphous silicon detector and conventional x-ray system films. With flat-panel technology, the visibility of rounded lesions and normal anatomical structures at 5, 4, and 3.2mAs was superior compared to the conventional film-screen radiography system. (P< or =0.0001). At 2mAs, improvement was only marginal (P=0.19). At 1.0, 0.5 and 0.25mAs, the visibility of simulated rounded lesions was worse (P< or =0.004). Comparing fine lung parenchymal structures, the flat-panel amorphous silicon detector showed improvement for all exposure levels down to 2mAs and equality at 1mAs. Compared to a conventional x-ray film system, the flat-panel amorphous silicon detector demonstrated improved image quality and the possibility for a reduction of the radiation dose by 50% without loss in image quality.

a-Si:H TFT-silicon hybrid low-energy x-ray detector

DOE PAGES

Shin, Kyung -Wook; Karim, Karim S.

2017-03-15

Direct conversion crystalline silicon X-ray imagers are used for low-energy X-ray photon (4-20 keV) detection in scientific research applications such as protein crystallography. In this paper, we demonstrate a novel pixel architecture that integrates a crystalline silicon X-ray detector with a thin-film transistor amorphous silicon pixel readout circuit. We describe a simplified two-mask process to fabricate a complete imaging array and present preliminary results that show the fabricated pixel to be sensitive to 5.89-keV photons from a low activity Fe-55 gamma source. Furthermore, this paper presented can expedite the development of high spatial resolution, low cost, direct conversion imagers formore » X-ray diffraction and crystallography applications.« less

High-responsivity vertical-illumination Si/Ge uni-traveling-carrier photodiodes based on silicon-on-insulator substrate.

PubMed

Li, Chong; Xue, ChunLai; Liu, Zhi; Cong, Hui; Cheng, Buwen; Hu, Zonghai; Guo, Xia; Liu, Wuming

2016-06-09

Si/Ge uni-traveling carrier photodiodes exhibit higher output current when space-charge effect is overcome and the thermal effects is suppressed. High current is beneficial for increasing the dynamic range of various microwave photonic systems and simplifying high-bit-rate digital receivers in many applications. From the point of view of packaging, detectors with vertical-illumination configuration can be easily handled by pick-and-place tools and are a popular choice for making photo-receiver modules. However, vertical-illumination Si/Ge uni-traveling carrier (UTC) devices suffer from inter-constraint between high speed and high responsivity. Here, we report a high responsivity vertical-illumination Si/Ge UTC photodiode based on a silicon-on-insulator substrate. When the transmission of the monolayer anti-reflection coating was maximum, the maximum absorption efficiency of the devices was 1.45 times greater than the silicon substrate owing to constructive interference. The Si/Ge UTC photodiode had a dominant responsivity at 1550 nm of 0.18 A/W, a 50% improvement even with a 25% thinner Ge absorption layer.

High-responsivity vertical-illumination Si/Ge uni-traveling-carrier photodiodes based on silicon-on-insulator substrate

PubMed Central

Li, Chong; Xue, ChunLai; Liu, Zhi; Cong, Hui; Cheng, Buwen; Hu, Zonghai; Guo, Xia; Liu, Wuming

2016-01-01

Si/Ge uni-traveling carrier photodiodes exhibit higher output current when space-charge effect is overcome and the thermal effects is suppressed. High current is beneficial for increasing the dynamic range of various microwave photonic systems and simplifying high-bit-rate digital receivers in many applications. From the point of view of packaging, detectors with vertical-illumination configuration can be easily handled by pick-and-place tools and are a popular choice for making photo-receiver modules. However, vertical-illumination Si/Ge uni-traveling carrier (UTC) devices suffer from inter-constraint between high speed and high responsivity. Here, we report a high responsivity vertical-illumination Si/Ge UTC photodiode based on a silicon-on-insulator substrate. When the transmission of the monolayer anti-reflection coating was maximum, the maximum absorption efficiency of the devices was 1.45 times greater than the silicon substrate owing to constructive interference. The Si/Ge UTC photodiode had a dominant responsivity at 1550 nm of 0.18 A/W, a 50% improvement even with a 25% thinner Ge absorption layer. PMID:27279426

Low-resistivity photon-transparent window attached to photo-sensitive silicon detector

DOEpatents

Holland, Stephen Edward

2000-02-15

The invention comprises a combination of a low resistivity, or electrically conducting, silicon layer that is transparent to long or short wavelength photons and is attached to the backside of a photon-sensitive layer of silicon, such as a silicon wafer or chip. The window is applied to photon sensitive silicon devices such as photodiodes, charge-coupled devices, active pixel sensors, low-energy x-ray sensors and other radiation detectors. The silicon window is applied to the back side of a photosensitive silicon wafer or chip so that photons can illuminate the device from the backside without interference from the circuit printed on the frontside. A voltage sufficient to fully deplete the high-resistivity photosensitive silicon volume of charge carriers is applied between the low-resistivity back window and the front, patterned, side of the device. This allows photon-induced charge created at the backside to reach the front side of the device and to be processed by any circuitry attached to the front side. Using the inventive combination, the photon sensitive silicon layer does not need to be thinned beyond standard fabrication methods in order to achieve full charge-depletion in the silicon volume. In one embodiment, the inventive backside window is applied to high resistivity silicon to allow backside illumination while maintaining charge isolation in CCD pixels.

Low-temperature technique of thin silicon ion implanted epitaxial detectors

NASA Astrophysics Data System (ADS)

Kordyasz, A. J.; Le Neindre, N.; Parlog, M.; Casini, G.; Bougault, R.; Poggi, G.; Bednarek, A.; Kowalczyk, M.; Lopez, O.; Merrer, Y.; Vient, E.; Frankland, J. D.; Bonnet, E.; Chbihi, A.; Gruyer, D.; Borderie, B.; Ademard, G.; Edelbruck, P.; Rivet, M. F.; Salomon, F.; Bini, M.; Valdré, S.; Scarlini, E.; Pasquali, G.; Pastore, G.; Piantelli, S.; Stefanini, A.; Olmi, A.; Barlini, S.; Boiano, A.; Rosato, E.; Meoli, A.; Ordine, A.; Spadaccini, G.; Tortone, G.; Vigilante, M.; Vanzanella, E.; Bruno, M.; Serra, S.; Morelli, L.; Guerzoni, M.; Alba, R.; Santonocito, D.; Maiolino, C.; Cinausero, M.; Gramegna, F.; Marchi, T.; Kozik, T.; Kulig, P.; Twaróg, T.; Sosin, Z.; Gaşior, K.; Grzeszczuk, A.; Zipper, W.; Sarnecki, J.; Lipiński, D.; Wodzińska, H.; Brzozowski, A.; Teodorczyk, M.; Gajewski, M.; Zagojski, A.; Krzyżak, K.; Tarasiuk, K. J.; Khabanowa, Z.; Kordyasz, Ł.

2015-02-01

A new technique of large-area thin ion implanted silicon detectors has been developed within the R&D performed by the FAZIA Collaboration. The essence of the technique is the application of a low-temperature baking process instead of high-temperature annealing. This thermal treatment is performed after B+ ion implantation and Al evaporation of detector contacts, made by using a single adjusted Al mask. Extremely thin silicon pads can be therefore obtained. The thickness distribution along the X and Y directions was measured for a prototype chip by the energy loss of α-particles from 241Am (< E α > = 5.5 MeV). Preliminary tests on the first thin detector (area ≈ 20 × 20 mm2) were performed at the INFN-LNS cyclotron in Catania (Italy) using products emitted in the heavy-ion reaction 84Kr ( E = 35 A MeV) + 112Sn. The ΔE - E ion identification plot was obtained using a telescope consisting of our thin ΔE detector (21 μm thick) followed by a typical FAZIA 510 μm E detector of the same active area. The charge distribution of measured ions is presented together with a quantitative evaluation of the quality of the Z resolution. The threshold is lower than 2 A MeV depending on the ion charge.

Functional test of a Radon sensor based on a high-resistivity-silicon BJT detector

NASA Astrophysics Data System (ADS)

Dalla Betta, G. F.; Tyzhnevyi, V.; Bosi, A.; Bonaiuti, M.; Angelini, C.; Batignani, G.; Bettarini, S.; Bosi, F.; Forti, F.; Giorgi, M. A.; Morsani, F.; Paoloni, E.; Rizzo, G.; Walsh, J.; Lusiani, A.; Ciolini, R.; Curzio, G.; D'Errico, F.; Del Gratta, A.; Bidinelli, L.; Rovati, L.; Saguatti, D.; Verzellesi, G.; Bosisio, L.; Rachevskaia, I.; Boscardin, M.; Giacomini, G.; Picciotto, A.; Piemonte, C.; Zorzi, N.; Calamosca, M.; Penzo, S.; Cardellini, F.

2013-08-01

A battery-powered, wireless Radon sensor has been designed and realized using a BJT, fabricated on a high-resistivity-silicon substrate, as a radiation detector. Radon daughters are electrostatically collected on the detector surface. Thanks to the BJT internal amplification, real-time α particle detection is possible using simple readout electronics, which records the particle arrival time and charge. Functional tests at known Radon concentrations, demonstrated a sensitivity up to 4.9 cph/(100 Bq/m3) and a count rate of 0.05 cph at nominally-zero Radon concentration.

Lead sulfide - Silicon MOSFET infrared focal plane development

NASA Technical Reports Server (NTRS)

Barrett, J. R.; Jhabvala, M. D.

1983-01-01

A process for directly integrating photoconductive lead sulfide (PbS) infrared detector material with silicon MOS integrated circuits has been developed primarily for application in long (greater than 10,000 detector elements) linear arrays for pushbroom scanning applications. The processing technology is based on the conventional PMOS and CMOS technologies with a variation in the metallization. Results and measurements on a fully integrated eight-element multiplexer are shown.

Silicon-based antenna-coupled polarization-sensitive millimeter-wave bolometer arrays for cosmic microwave background instruments

NASA Astrophysics Data System (ADS)

Rostem, Karwan; Ali, Aamir; Appel, John W.; Bennett, Charles L.; Brown, Ari; Chang, Meng-Ping; Chuss, David T.; Colazo, Felipe A.; Costen, Nick; Denis, Kevin L.; Essinger-Hileman, Tom; Hu, Ron; Marriage, Tobias A.; Moseley, Samuel H.; Stevenson, Thomas R.; U-Yen, Kongpop; Wollack, Edward J.; Xu, Zhilei

2016-07-01

We describe feedhorn-coupled polarization-sensitive detector arrays that utilize monocrystalline silicon as the dielectric substrate material. Monocrystalline silicon has a low-loss tangent and repeatable dielectric constant, characteristics that are critical for realizing efficient and uniform superconducting microwave circuits. An additional advantage of this material is its low specific heat. In a detector pixel, two Transition-Edge Sensor (TES) bolometers are antenna-coupled to in-band radiation via a symmetric planar orthomode transducer (OMT). Each orthogonal linear polarization is coupled to a separate superconducting microstrip transmission line circuit. On-chip filtering is employed to both reject out-of-band radiation from the upper band edge to the gap frequency of the niobium superconductor, and to flexibly define the bandwidth for each TES to meet the requirements of the application. The microwave circuit is compatible with multi-chroic operation. Metalized silicon platelets are used to define the backshort for the waveguide probes. This micro-machined structure is also used to mitigate the coupling of out-of-band radiation to the microwave circuit. At 40 GHz, the detectors have a measured efficiency of ˜90%. In this paper, we describe the development of the 90 GHz detector arrays that will be demonstrated using the Cosmology Large Angular Scale Surveyor (CLASS) ground-based telescope.

A new large solid angle multi-element silicon drift detector system for low energy X-ray fluorescence spectroscopy

NASA Astrophysics Data System (ADS)

Bufon, J.; Schillani, S.; Altissimo, M.; Bellutti, P.; Bertuccio, G.; Billè, F.; Borghes, R.; Borghi, G.; Cautero, G.; Cirrincione, D.; Fabiani, S.; Ficorella, F.; Gandola, M.; Gianoncelli, A.; Giuressi, D.; Kourousias, G.; Mele, F.; Menk, R. H.; Picciotto, A.; Rachevski, A.; Rashevskaya, I.; Sammartini, M.; Stolfa, A.; Zampa, G.; Zampa, N.; Zorzi, N.; Vacchi, A.

2018-03-01

Low-energy X-ray fluorescence (LEXRF) is an essential tool for bio-related research of organic samples, whose composition is dominated by light elements. Working at energies below 2 keV and being able to detect fluorescence photons of lightweight elements such as carbon (277 eV) is still a challenge, since it requires in-vacuum operations to avoid in-air photon absorption. Moreover, the detectors must have a thin entrance window and collect photons at an angle of incidence near 90 degrees to minimize the absorption by the protective coating. Considering the low fluorescence yield of light elements, it is important to cover a substantial part of the solid angle detecting ideally all emitted X-ray fluorescence (XRF) photons. Furthermore, the energy resolution of the detection system should be close to the Fano limit in order to discriminate elements whose XRF emission lines are often very close within the energy spectra. To ensure all these features, a system consisting of four monolithic multi-element silicon drift detectors was developed. The use of four separate detector units allows optimizing the incidence angle on all the sensor elements. The multi-element approach in turn provides a lower leakage current on each anode, which, in combination with ultra-low noise preamplifiers, is necessary to achieve an energy resolution close to the Fano limit. The potential of the new detection system and its applicability for typical LEXRF applications has been proved on the Elettra TwinMic beamline.

Output factor determination for dose measurements in axial and perpendicular planes using a silicon strip detector

NASA Astrophysics Data System (ADS)

Abou-Haïdar, Z.; Bocci, A.; Alvarez, M. A. G.; Espino, J. M.; Gallardo, M. I.; Cortés-Giraldo, M. A.; Ovejero, M. C.; Quesada, J. M.; Arráns, R.; Prieto, M. Ruiz; Vega-Leal, A. Pérez; Nieto, F. J. Pérez

2012-04-01

In this work we present the output factor measurements of a clinical linear accelerator using a silicon strip detector coupled to a new system for complex radiation therapy treatment verification. The objective of these measurements is to validate the system we built for treatment verification. The measurements were performed at the Virgin Macarena University Hospital in Seville. Irradiations were carried out with a Siemens ONCOR™ linac used to deliver radiotherapy treatment for cancer patients. The linac was operating in 6 MV photon mode; the different sizes of the fields were defined with the collimation system provided within the accelerator head. The output factor was measured with the silicon strip detector in two different layouts using two phantoms. In the first, the active area of the detector was placed perpendicular to the beam axis. In the second, the innovation consisted of a cylindrical phantom where the detector was placed in an axial plane with respect to the beam. The measured data were compared with data given by a commercial treatment planning system. Results were shown to be in a very good agreement between the compared set of data.

Micrometer-resolution imaging using MÖNCH: towards G2-less grating interferometry

PubMed Central

Cartier, Sebastian; Kagias, Matias; Bergamaschi, Anna; Wang, Zhentian; Dinapoli, Roberto; Mozzanica, Aldo; Ramilli, Marco; Schmitt, Bernd; Brückner, Martin; Fröjdh, Erik; Greiffenberg, Dominic; Mayilyan, Davit; Mezza, Davide; Redford, Sophie; Ruder, Christian; Schädler, Lukas; Shi, Xintian; Thattil, Dhanya; Tinti, Gemma; Zhang, Jiaguo; Stampanoni, Marco

2016-01-01

MÖNCH is a 25 µm-pitch charge-integrating detector aimed at exploring the limits of current hybrid silicon detector technology. The small pixel size makes it ideal for high-resolution imaging. With an electronic noise of about 110 eV r.m.s., it opens new perspectives for many synchrotron applications where currently the detector is the limiting factor, e.g. inelastic X-ray scattering, Laue diffraction and soft X-ray or high-resolution color imaging. Due to the small pixel pitch, the charge cloud generated by absorbed X-rays is shared between neighboring pixels for most of the photons. Therefore, at low photon fluxes, interpolation algorithms can be applied to determine the absorption position of each photon with a resolution of the order of 1 µm. In this work, the characterization results of one of the MÖNCH prototypes are presented under low-flux conditions. A custom interpolation algorithm is described and applied to the data to obtain high-resolution images. Images obtained in grating interferometry experiments without the use of the absorption grating G2 are shown and discussed. Perspectives for the future developments of the MÖNCH detector are also presented. PMID:27787252

The artificial retina for track reconstruction at the LHC crossing rate

NASA Astrophysics Data System (ADS)

Abba, A.; Bedeschi, F.; Citterio, M.; Caponio, F.; Cusimano, A.; Geraci, A.; Marino, P.; Morello, M. J.; Neri, N.; Punzi, G.; Piucci, A.; Ristori, L.; Spinella, F.; Stracka, S.; Tonelli, D.

2016-04-01

We present the results of an R&D study for a specialized processor capable of precisely reconstructing events with hundreds of charged-particle tracks in pixel and silicon strip detectors at 40 MHz, thus suitable for processing LHC events at the full crossing frequency. For this purpose we design and test a massively parallel pattern-recognition algorithm, inspired to the current understanding of the mechanisms adopted by the primary visual cortex of mammals in the early stages of visual-information processing. The detailed geometry and charged-particle's activity of a large tracking detector are simulated and used to assess the performance of the artificial retina algorithm. We find that high-quality tracking in large detectors is possible with sub-microsecond latencies when the algorithm is implemented in modern, high-speed, high-bandwidth FPGA devices.

A high time resolution x-ray diagnostic on the Madison Symmetric Torus

NASA Astrophysics Data System (ADS)

DuBois, Ami M.; Lee, John David; Almagri, Abdulgadar F.

2015-07-01

A new high time resolution x-ray detector has been installed on the Madison Symmetric Torus (MST) to make measurements around sawtooth events. The detector system is comprised of a silicon avalanche photodiode, a 20 ns Gaussian shaping amplifier, and a 500 MHz digitizer with 14-bit sampling resolution. The fast shaping time diminishes the need to restrict the amount of x-ray flux reaching the detector, limiting the system dead-time. With a much higher time resolution than systems currently in use in high temperature plasma physics experiments, this new detector has the versatility to be used in a variety of discharges with varying flux and the ability to study dynamics on both slow and fast time scales. This paper discusses the new fast x-ray detector recently installed on MST and the improved time resolution capabilities compared to the existing soft and hard x-ray diagnostics. In addition to the detector hardware, improvements to the detector calibration and x-ray pulse identification software, such as additional fitting parameters and a more sophisticated fitting routine are discussed. Finally, initial data taken in both high confinement and standard reversed-field pinch plasma discharges are compared.

Mechanical Design and Development of TES Bolometer Detector Arrays for the Advanced ACTPol Experiment

NASA Technical Reports Server (NTRS)

Ward, Jonathan T.; Austermann, Jason; Beall, James A.; Choi, Steve K.; Crowley, Kevin T.; Devlin, Mark J.; Duff, Shannon M.; Gallardo, Patricio M.; Henderson, Shawn W.; Ho, Shuay-Pwu Patty;

Mechanical designs and development of TES bolometer detector arrays for the Advanced ACTPol experiment

NASA Astrophysics Data System (ADS)

Ward, Jonathan T.; Austermann, Jason; Beall, James A.; Choi, Steve K.; Crowley, Kevin T.; Devlin, Mark J.; Duff, Shannon M.; Gallardo, Patricio A.; Henderson, Shawn W.; Ho, Shuay-Pwu Patty; Hilton, Gene; Hubmayr, Johannes; Khavari, Niloufar; Klein, Jeffrey; Koopman, Brian J.; Li, Dale; McMahon, Jeffrey; Mumby, Grace; Nati, Federico; Niemack, Michael D.; Page, Lyman A.; Salatino, Maria; Schillaci, Alessandro; Schmitt, Benjamin L.; Simon, Sara M.; Staggs, Suzanne T.; Thornton, Robert; Ullom, Joel N.; Vavagiakis, Eve M.; Wollack, Edward J.

2016-07-01

The next generation Advanced ACTPol (AdvACT) experiment is currently underway and will consist of four Transition Edge Sensor (TES) bolometer arrays, with three operating together, totaling 5800 detectors on the sky. Building on experience gained with the ACTPol detector arrays, AdvACT will utilize various new technologies, including 150 mm detector wafers equipped with multichroic pixels, allowing for a more densely packed focal plane. Each set of detectors includes a feedhorn array of stacked silicon wafers which form a spline profile leading to each pixel. This is then followed by a waveguide interface plate, detector wafer, back short cavity plate, and backshort cap. Each array is housed in a custom designed structure manufactured from high purity copper and then gold plated. In addition to the detector array assembly, the array package also encloses cryogenic readout electronics. We present the full mechanical design of the AdvACT high frequency (HF) detector array package along with a detailed look at the detector array stack assemblies. This experiment will also make use of extensive hardware and software previously developed for ACT, which will be modified to incorporate the new AdvACT instruments. Therefore, we discuss the integration of all AdvACT arrays with pre-existing ACTPol infrastructure.

Design of an ultrathin cold neutron detector

NASA Astrophysics Data System (ADS)

Osovizky, A.; Pritchard, K.; Yehuda-Zada, Y.; Ziegler, J.; Binkley, E.; Tsai, P.; Thompson, A.; Hadad, N.; Jackson, M.; Hurlbut, C.; Baltic, G. M.; Majkrzak, C. F.; Maliszewskyj, N. C.

2018-06-01

We describe the design and performance of an ultrathin (<2 mm) cold neutron detector consisting of 6LiF:ZnS(Ag) scintillator in which wavelength shifting fibers have been embedded to conduct scintillation photons out of the medium to a silicon photomultiplier photosensor. The counter has a neutron sensitive volume of 12 mm wide × 30 mm high × 1.4 mm deep. Twenty-four 0.5 mm diameter wavelength shifting fibers conduct the scintillation light out of the plane of the detector and are concentrated onto a 3 mm × 3 mm silicon photomultiplier. The detector is demonstrated to possess a neutron detection efficiency of 93% for 3.27 meV neutrons with a gamma ray rejection ratio on the order of 10-7.

Neutral particle background in cosmic ray telescopes composed of silicon solid state detectors

NASA Technical Reports Server (NTRS)

Mewaldt, R. A.; Stone, E. C.; Vogt, R. E.

1977-01-01

The energy loss-spectrum of secondary charged particles produced by the interaction of gamma-rays and energetic neutrons in silicon solid state detectors has been measured with a satellite-borne cosmic ray telescope. In the satellite measurements presented here two distinct neutral background effects are identified: secondary protons and alpha particles with energies of about 2 to 100 MeV produced by neutron interactions, and secondary electrons with energies of about 0.2 to 10 MeV produced by X-ray interactions. The implications of this neutral background for satellite measurements of low energy cosmic rays are discussed, and suggestions are given for applying these results to other detector systems in order to estimate background contamination and optimize detector system design.

Measurement of nuclear resonant scattering on 61Ni with fast scintillation detector using proportional-mode silicon avalanche photodiode

NASA Astrophysics Data System (ADS)

Inoue, Keisuke; Kobayashi, Yasuhiro; Yoda, Yoshitaka; Koshimizu, Masanori; Nishikido, Fumihiko; Haruki, Rie; Kishimoto, Shunji

2018-02-01

We developed a new scintillation timing detector using a proportional-mode silicon avalanche photodiode (Si-APD) for synchrotron radiation nuclear resonant scattering. We report on the nuclear forward scattering measurement on 61Ni with a prototype detector using a lead-loaded plastic scintillator (EJ-256, 3 mm in diameter and 2 mm in thickness), mounted on a proportional-mode Si-APD. Using synchrotron X-rays of 67.41 keV, we successfully measured the time spectra of nuclear forward scattering on 61Ni enriched metal foil and 61Ni86V14 alloy. The prototype detector confirmed the expected dynamical beat structure with a time resolution of 0.53 ns (FWHM).

A microfabricated, low dark current a-Se detector for measurement of microplasma optical emission in the UV for possible use on-site

NASA Astrophysics Data System (ADS)

Abbaszadeh, Shiva; Karim, Karim S.; Karanassios, Vassili

2013-05-01

Traditionally, samples are collected on-site (i.e., in the field) and are shipped to a lab for chemical analysis. An alternative is offered by using portable chemical analysis instruments that can be used on-site (i.e., in the field). Many analytical measurements by optical emission spectrometry require use of light-sources and of spectral lines that are in the Ultra-Violet (UV, ~200 nm - 400 nm wavelength) region of the spectrum. For such measurements, a portable, battery-operated, fiber-optic spectrometer equipped with an un-cooled, linear, solid-state detector may be used. To take full advantage of the advanced measurement capabilities offered by state-of-the-art solid-state detectors, cooling of the detector is required. But cooling and other thermal management hamper portability and use on-site because they add size and weight and they increase electrical power requirements. To address these considerations, an alternative was implemented, as described here. Specifically, a microfabricated solid-state detector for measurement of UV photons will be described. Unlike solid-state detectors developed on crystalline Silicon, this miniaturized and low-cost detector utilizes amorphous Selenium (a-Se) as its photosensitive material. Due to its low dark current, this detector does not require cooling, thus it is better suited for portable use and for chemical measurements on-site. In this paper, a microplasma will be used as a light-source of UV photons for the a-Se detector. For example, spectra acquired using a microplasma as a light-source will be compared with those obtained with a portable, fiber-optic spectrometer equipped with a Si-based 2080-element detector. And, analytical performance obtained by introducing ng-amounts of analytes into the microplasma will be described.

Silicon detectors for combined MR-PET and MR-SPECT imaging

NASA Astrophysics Data System (ADS)

Studen, A.; Brzezinski, K.; Chesi, E.; Cindro, V.; Clinthorne, N. H.; Cochran, E.; Grošičar, B.; Grkovski, M.; Honscheid, K.; Kagan, H.; Lacasta, C.; Llosa, G.; Mikuž, M.; Stankova, V.; Weilhammer, P.; Žontar, D.

2013-02-01

Silicon based devices can extend PET-MR and SPECT-MR imaging to applications, where their advantages in performance outweigh benefits of high statistical counts. Silicon is in many ways an excellent detector material with numerous advantages, among others: excellent energy and spatial resolution, mature processing technology, large signal to noise ratio, relatively low price, availability, versatility and malleability. The signal in silicon is also immune to effects of magnetic field at the level normally used in MR devices. Tests in fields up to 7 T were performed in a study to determine effects of magnetic field on positron range in a silicon PET device. The curvature of positron tracks in direction perpendicular to the field's orientation shortens the distance between emission and annihilation point of the positron. The effect can be fully appreciated for a rotation of the sample for a fixed field direction, compressing range in all dimensions. A popular Ga-68 source was used showing a factor of 2 improvement in image noise compared to zero field operation. There was also a little increase in noise as the reconstructed resolution varied between 2.5 and 1.5 mm. A speculative applications can be recognized in both emission modalities, SPECT and PET. Compton camera is a subspecies of SPECT, where a silicon based scatter as a MR compatible part could inserted into the MR bore and the secondary detector could operate in less constrained environment away from the magnet. Introducing a Compton camera also relaxes requirements of the radiotracers used, extending the range of conceivable photon energies beyond 140.5 keV of the Tc-99m. In PET, one could exploit the compressed sub-millimeter range of positrons in the magnetic field. To exploit the advantage, detectors with spatial resolution commensurate to the effect must be used with silicon being an excellent candidate. Measurements performed outside of the MR achieving spatial resolution below 1 mm are reported.

The Silicon Matrix as a Charge Detector in the ATIC Experiment

NASA Technical Reports Server (NTRS)

Zatsepin, V. I.; Adams, J. H.; Ahn, H. S.; Bashindzhagyan, G. L.; Batkov, K. E.; Chang, J.; Christl, M.; Fazely, A. R.; Ganel, O.; Gunasingha, R. M.

2004-01-01

The Advanced Thin Ionization Calorimeter (ATIC) was built for series of long- duration balloon flights in Antarctica. Its main goal is to measure energy spectra of cosmic ray nuclei from protons up to iron nuclei over a wide energy range from 30 GeV up to 100 TeV. The ATIC balloon experiment had its first, test flight that lasted for 16 days from 28 Dec 2000 to 13 Jan 2OO1 around the continent. The ATIC spectrometer consists of a fully active BGO calorimeter, scintillator hodoscopes and a silicon matrix. The silicon matrix, consisting of 4480 pixels, was used as a charge detector in the experiment. About 25 million cosmic ray events were detected during the flight. In the paper, the charge spectrum obtained with the silicon matrix is analyzed.

Noise and frequency response of silicon photodiode operational amplifier combination.

PubMed

Hamstra, R H; Wendland, P

1972-07-01

The noise in dark and illuminated Schottky barrier and diffused PIN non-guard-ring photodiodes has been measured between 0.1 Hz and 10 kHz and compared to theory with an excellent fit. It is shown that diodes used photovoltaically are free of 1/f noise in the dark. It is also demonstrated that there is an optimum bias (ca. 100 mV) for minimum noise equivalent power. When only a resistive load is used with a detector, it often determines the frequency response and noise of the detector circuit. We develop and demonstrate equations for the major improvements in both noise and frequency response that can be obtained using a current mode (inverting) operational amplifier.

Images of the future - Two decades in astronomy

NASA Technical Reports Server (NTRS)

Weistrop, D.

1982-01-01

Future instruments for the 100-10,000 A UV-wavelength region will require detectors with greater quantum efficiency, smaller picture elements, a greater wavelength range, and greater active area than those currently available. After assessing the development status and performance characteristics of vidicons, image tubes, electronographic cameras, digicons, silicon arrays and microchannel plate intensifiers presently employed by astronomical spacecraft, attention is given to such next-generation detectors as the Mosaicked Optical Self-scanned Array Imaging Camera, which consists of a photocathode deposited on the input side of a microchannel plate intensifier. The problems posed by the signal processing and data analysis requirements of the devices foreseen for the 21st century are noted.

Semiconducting boron carbide polymers devices for neutron detection

NASA Astrophysics Data System (ADS)

Echeverria, Elena; Pasquale, Frank L.; James, Robinson; Colón Santana, Juan A.; Adenwalla, Shireen; Kelber, Jeffry A.; Dowben, Peter A.

2014-03-01

Boron carbide materials, with aromatic compounds included, prove to be effective materials as solid state neutron detector detectors. The I-V characteristic curves for these heterojunction diodes with silicon show that these modified boron carbides, in the presence of these linking groups such as 1,4-diaminobenzene (DAB) and pyridine, are p-type. Cadmium was used as shield to discriminate between neutron-induced signals and thermal neutrons, and thermal neutron capture is evident, while gamma detection was not realized. Neutron detection signals for these heterojunction diode were observed, a measurable zero bias current noted, even without complete electron-hole collection. This again illustrates that boron carbide devices can be considered a neutron voltaic.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Jones, M.

Configuration and calibration of the front-end electronics typical of many silicon detector configurations were investigated in a lab activity based on a pair of strip sensors interfaced with FSSR2 read-out chips and an FPGA. This simple hardware configuration, originally developed for a telescope at the Fermilab Test Beam Facility, was used to measure thresholds and noise on individual readout channels and to study the influence that different configurations of the front-end electronics had on the observed levels of noise in the system. An understanding of the calibration and operation of this small detector system provided an opportunity to explore themore » architecture of larger systems such as those currently in use at LHC experiments.« less

Microminiature gas chromatograph

DOEpatents

Yu, Conrad M.

1996-01-01

A microminiature gas chromatograph (.mu.GC) comprising a least one silicon wafer, a gas injector, a column, and a detector. The gas injector has a normally closed valve for introducing a mobile phase including a sample gas in a carrier gas. The valve is fully disposed in the silicon wafer(s). The column is a microcapillary in silicon crystal with a stationary phase and is mechanically connected to receive the mobile phase from the gas injector for the molecular separation of compounds in the sample gas. The detector is mechanically connected to the column for the analysis of the separated compounds of sample gas with electronic means, e.g., ion cell, field emitter and PIN diode.

Device and method for accurately measuring concentrations of airborne transuranic isotopes

DOEpatents

McIsaac, Charles V.; Killian, E. Wayne; Grafwallner, Ervin G.; Kynaston, Ronnie L.; Johnson, Larry O.; Randolph, Peter D.

1996-01-01

An alpha continuous air monitor (CAM) with two silicon alpha detectors and three sample collection filters is described. This alpha CAM design provides continuous sampling and also measures the cumulative transuranic (TRU), i.e., plutonium and americium, activity on the filter, and thus provides a more accurate measurement of airborne TRU concentrations than can be accomplished using a single fixed sample collection filter and a single silicon alpha detector.

Device and method for accurately measuring concentrations of airborne transuranic isotopes

DOEpatents

McIsaac, C.V.; Killian, E.W.; Grafwallner, E.G.; Kynaston, R.L.; Johnson, L.O.; Randolph, P.D.

1996-09-03

An alpha continuous air monitor (CAM) with two silicon alpha detectors and three sample collection filters is described. This alpha CAM design provides continuous sampling and also measures the cumulative transuranic (TRU), i.e., plutonium and americium, activity on the filter, and thus provides a more accurate measurement of airborne TRU concentrations than can be accomplished using a single fixed sample collection filter and a single silicon alpha detector. 7 figs.

Study of 236U/238U ratio at CIRCE using a 16-strip silicon detector with a TOF system

NASA Astrophysics Data System (ADS)

De Cesare, M.; De Cesare, N.; D'Onofrio, A.; Gialanella, L.; Terrasi, F.

2015-04-01

Accelerator Mass Spectrometry (AMS) is presently the most sensitive technique for the measurement of long-lived actinides, e.g. 236U and xPu isotopes. A new actinide AMS system, based on a 3-MV pelletron tandem accelerator, is operated at the Center for Isotopic Research on Cultural and Environmental Heritage (CIRCE) in Caserta, Italy. In this paper we report on the procedure adopted to increase the 236U abundance sensitivity as low as possible. The energy and position determinations of the 236U ions, using a 16-strip silicon detector have been obtained. A 236U/238U isotopic ratio background level of about 2.9×10-11 was obtained, summing over all the strips, using a Time of Flight-Energy (TOF-E) system with a 16-strip silicon detector (4.9×10-12 just with one strip).

The Silicon Tracking System of the CBM experiment at FAIR

NASA Astrophysics Data System (ADS)

Teklishyn, Maksym

2018-03-01

The Silicon Tracking System (STS) is the central detector in the Compressed Baryonic Matter (CBM) experiment at FAIR. Operating in the 1Tm dipole magnetic field, the STS will enable pile-up free detection and momentum measurement of the charged particles originating from beam-target nuclear interactions at rates up to 10 MHz. The STS consists of 8 tracking stations based on double-sided silicon micro-strip sensors equipped with fast, self-triggering read-out electronics. With about two million read-out channels, the STS will deliver a high-rate stream of time-stamped data that is transferred to a computing farm for on-line event determination and analysis. The functional building block is a detector module consisting of a sensor, micro-cables and two front-end electronics boards. In this contribution, the development status of the STS components and the system integration is discussed and an outlook on the detector construction is given.

A precision device needs precise simulation: Software description of the CBM Silicon Tracking System

NASA Astrophysics Data System (ADS)

Malygina, Hanna; Friese, Volker; CBM Collaboration

2017-10-01

Precise modelling of detectors in simulations is the key to the understanding of their performance, which, in turn, is a prerequisite for the proper design choice and, later, for the achievement of valid physics results. In this report, we describe the implementation of the Silicon Tracking System (STS), the main tracking device of the CBM experiment, in the CBM software environment. The STS makes uses of double-sided silicon micro-strip sensors with double metal layers. We present a description of transport and detector response simulation, including all relevant physical effects like charge creation and drift, charge collection, cross-talk and digitization. Of particular importance and novelty is the description of the time behaviour of the detector, since its readout will not be externally triggered but continuous. We also cover some aspects of local reconstruction, which in the CBM case has to be performed in real-time and thus requires high-speed algorithms.

Pixel pitch and particle energy influence on the dark current distribution of neutron irradiated CMOS image sensors.

PubMed

Belloir, Jean-Marc; Goiffon, Vincent; Virmontois, Cédric; Raine, Mélanie; Paillet, Philippe; Duhamel, Olivier; Gaillardin, Marc; Molina, Romain; Magnan, Pierre; Gilard, Olivier

2016-02-22

The dark current produced by neutron irradiation in CMOS Image Sensors (CIS) is investigated. Several CIS with different photodiode types and pixel pitches are irradiated with various neutron energies and fluences to study the influence of each of these optical detector and irradiation parameters on the dark current distribution. An empirical model is tested on the experimental data and validated on all the irradiated optical imagers. This model is able to describe all the presented dark current distributions with no parameter variation for neutron energies of 14 MeV or higher, regardless of the optical detector and irradiation characteristics. For energies below 1 MeV, it is shown that a single parameter has to be adjusted because of the lower mean damage energy per nuclear interaction. This model and these conclusions can be transposed to any silicon based solid-state optical imagers such as CIS or Charged Coupled Devices (CCD). This work can also be used when designing an optical imager instrument, to anticipate the dark current increase or to choose a mitigation technique.

SiliPET: An ultra-high resolution design of a small animal PET scanner based on stacks of double-sided silicon strip detector

NASA Astrophysics Data System (ADS)

Di Domenico, Giovanni; Zavattini, Guido; Cesca, Nicola; Auricchio, Natalia; Andritschke, Robert; Schopper, Florian; Kanbach, Gottfried

2007-02-01

We investigated with Monte Carlo simulations, using the EGSNrcMP code, the capabilities of a small animal PET scanner based on four stacks of double-sided silicon strip detectors. Each stack consists of 40 silicon detectors with dimension of 60×60×1 mm 3 and 128 orthogonal strips on each side. Two coordinates of the interaction are given by the strips, whereas the third coordinate is given by the detector number in the stack. The stacks are arranged to form a box of 5×5×6 cm 3 with minor sides opened; the box represents the minimal FOV of the scanner. The performance parameters of the SiliPET scanner have been estimated giving a (positron range limited) spatial resolution of 0.52 mm FWHM, and an absolute sensitivity of 5.1% at the center of system. Preliminary results of a proof of principle measurement done with the MEGA advanced Compton imager using a ≈1 mm diameter 22Na source, showed a focal ray tracing FWHM of 1 mm.

Comparison of magnetic resonance imaging-compatible optical detectors for in-magnet tissue spectroscopy: photodiodes versus silicon photomultipliers

PubMed Central

El-Ghussein, Fadi; Jiang, Shudong; Pogue, Brian W.; Paulsen, Keith D.

2014-01-01

Abstract. Tissue spectroscopy inside the magnetic resonance imaging (MRI) system adds a significant value by measuring fast vascular hemoglobin responses or completing spectroscopic identification of diagnostically relevant molecules. Advances in this type of spectroscopy instrumentation have largely focused on fiber coupling into and out of the MRI; however, nonmagnetic detectors can now be placed inside the scanner with signal amplification performed remotely to the high field environment for optimized light detection. In this study, the two possible detector options, such as silicon photodiodes (PD) and silicon photomultipliers (SiPM), were systematically examined for dynamic range and wavelength performance. Results show that PDs offer 108 (160 dB) dynamic range with sensitivity down to 1 pW, whereas SiPMs have 107 (140 dB) dynamic range and sensitivity down to 10 pW. A second major difference is the spectral sensitivity of the two detectors. Here, wavelengths in the 940 nm range are efficiently captured by PDs (but not SiPMs), likely making them the superior choice for broadband spectroscopy guided by MRI. PMID:25006986

Towards a high performing UV-A sensor based on Silicon Carbide and hydrogenated Silicon Nitride absorbing layers

NASA Astrophysics Data System (ADS)

Mazzillo, M.; Sciuto, A.; Mannino, G.; Renna, L.; Costa, N.; Badalà, P.

2016-10-01

Exposure to ultraviolet (UV) radiation is a major risk factor for most skin cancers. The sun is our primary natural source of UV radiation. The strength of the sun's ultraviolet radiation is expressed as Solar UV Index (UVI). UV-A (320-400 nm) and UV-B (290-320 nm) rays mostly contribute to UVI. UV-B is typically the most destructive form of UV radiation because it has enough energy to cause photochemical damage to cellular DNA. Also overexposure to UV-A rays, although these are less energetic than UV-B photons, has been associated with toughening of the skin, suppression of the immune system, and cataract formation. The use of preventive measures to decrease sunlight UV radiation absorption is fundamental to reduce acute and irreversible health diseases to skin, eyes and immune system. In this perspective UV sensors able to monitor in a monolithic and compact chip the UV Index and relative UV-A and UV-B components of solar spectrum can play a relevant role for prevention, especially in view of the integration of these detectors in close at hand portable devices. Here we present the preliminary results obtained on our UV-A sensor technology based on the use of hydrogenated Silicon Nitride (SiN:H) thin passivating layers deposited on the surface of thin continuous metal film Ni2Si/4H-SiC Schottky detectors, already used for UV-Index monitoring. The first UV-A detector prototypes exhibit a very low leakage current density of about 0.2 pA/mm2 and a peak responsivity value of 0.027 A/W at 330 nm, both measured at 0V bias.

Advance in multi-hit detection and quantization in atom probe tomography.

PubMed

Da Costa, G; Wang, H; Duguay, S; Bostel, A; Blavette, D; Deconihout, B

2012-12-01

The preferential retention of high evaporation field chemical species at the sample surface in atom-probe tomography (e.g., boron in silicon or in metallic alloys) leads to correlated field evaporation and pronounced pile-up effects on the detector. The latter severely affects the reliability of concentration measurements of current 3D atom probes leading to an under-estimation of the concentrations of the high-field species. The multi-hit capabilities of the position-sensitive time-resolved detector is shown to play a key role. An innovative method based on Fourier space signal processing of signals supplied by an advance delay-line position-sensitive detector is shown to drastically improve the time resolving power of the detector and consequently its capability to detect multiple events. Results show that up to 30 ions on the same evaporation pulse can be detected and properly positioned. The major impact of this new method on the quantization of chemical composition in materials, particularly in highly-doped Si(B) samples is highlighted.

Differential phase contrast with a segmented detector in a scanning X-ray microprobe

PubMed Central

Hornberger, B.; de Jonge, M. D.; Feser, M.; Holl, P.; Holzner, C.; Jacobsen, C.; Legnini, D.; Paterson, D.; Rehak, P.; Strüder, L.; Vogt, S.

2008-01-01

Scanning X-ray microprobes are unique tools for the nanoscale investigation of specimens from the life, environmental, materials and other fields of sciences. Typically they utilize absorption and fluorescence as contrast mechanisms. Phase contrast is a complementary technique that can provide strong contrast with reduced radiation dose for weakly absorbing structures in the multi-keV range. In this paper the development of a segmented charge-integrating silicon detector which provides simultaneous absorption and differential phase contrast is reported. The detector can be used together with a fluorescence detector for the simultaneous acquisition of transmission and fluorescence data. It can be used over a wide range of photon energies, photon rates and exposure times at third-generation synchrotron radiation sources, and is currently operating at two beamlines at the Advanced Photon Source. Images obtained at around 2 keV and 10 keV demonstrate the superiority of phase contrast over absorption for specimens composed of light elements. PMID:18552427

Performance evaluation of bottom gate ZnO based thin film transistors with different W/L ratios for UV sensing

NASA Astrophysics Data System (ADS)

Varma, Tarun; Periasamy, C.; Boolchandani, Dharmendar

2018-02-01

In this paper, we report the simulation, fabrication and characterisation of UV photo-detectors with bottom gate ZnO Thin Film Transistors (TFTs), grown on silicon at room temperature using RF magnetron sputtering process. The static performance of these detectors have been explored by varying the channel lengths (6 μm and 12 μm). The fabricated devices show low leakage currents with threshold voltages of 1.18 & 2.33 V, sub-threshold swings of 13.5 & 12.8 V/dec for channel lengths of 6 μm and 12 μm TFT, respectively. They also exhibit superior electrical characteristics with an ON-OFF ratio of the order of 3. The detector was also tested for device stability, with the transfer characteristics of the TFTs, which got deteriorated mainly by the negative bias-stress. The TFTs were further tested for UV detector applications and found to exhibit good photo-response.

Design and optimization of a novel 3D detector: The 3D-open-shell-electrode detector

NASA Astrophysics Data System (ADS)

Liu, Manwen; Tan, Jian; Li, Zheng

2018-04-01

A new type of three-dimensional (3D) detector, namely 3D-Open-Shell-Electrode Detector (3DOSED), is proposed in this study. In a 3DOSED, the trench electrode can be etched all the way through the detector thickness, totally eliminating the low electric field region existed in the conventional 3D-Trench-Electrode detector. Full 3D technology computer-aided design (TCAD) simulations have been done on this novel silicon detector structure. Through comparing of the simulation results of the detector, we can obtain the best design of the 3SOSED. In addition, simulation results show that, as compared to the conventional 3D detector, the proposed 3DOSED can improve not only detector charge collection efficiency but also its radiation hardness with regard to solving the trapping problem in the detector bulk. What is more, it has been shown that detector full depletion voltage is also slightly reduced, which can improve the utility aspects of the detector. When compared to the conventional 3D detector, we find that the proposed novel 3DOSED structure has better electric potential and electric field distributions, and better electrical properties such as detector full depletion voltage. In 3DOSED array, each pixel cell is isolated from each other by highly doped trenches, but also electrically and physically connected with each other through the remaining silicon bulk between broken electrodes.

Studying radiation hardness of a cadmium tungstate crystal based radiation detector

NASA Astrophysics Data System (ADS)

Shtein, M. M.; Smekalin, L. F.; Stepanov, S. A.; Zatonov, I. A.; Tkacheva, T. V.; Usachev, E. Yu

2016-06-01

The given article considers radiation hardness of an X-ray detector used in production of non-destructive testing instruments and inspection systems. In the course of research, experiments were carried out to estimate radiation hardness of a detector based on cadmium tungstate crystal and its structural components individually. The article describes a layout of an experimental facility that was used for measurements of radiation hardness. The radiation dose dependence of the photodiode current is presented, when it is excited by a light flux of a scintillator or by an external light source. Experiments were carried out to estimate radiation hardness of two types of optical glue used in detector production; they are based on silicon rubber and epoxy. With the help of a spectrophotometer and cobalt gun, each of the glue samples was measured for a relative light transmission factor with different wavelengths, depending on the radiation dose. The obtained data are presented in a comprehensive analysis of the results. It was determined, which of the glue samples is most suitable for production of detectors working under exposure to strong radiation.

Focal Plane Detectors for the Advanced Gamma-Ray Imaging System (AGIS)

NASA Astrophysics Data System (ADS)

Otte, A. N.; Byrum, K.; Drake, G.; Falcone, A.; Funk, S.; Horan, D.; Mukherjee, R.; Smith, A.; Tajima, H.; Wagner, R. G.; Williams, D. A.

2008-12-01

The Advanced Gamma-Ray Imaging System (AGIS) is a concept for the next generation observatory in ground-based very high energy gamma-ray astronomy. Design goals are ten times better sensitivity, higher angular resolution, and a lower energy threshold than existing Cherenkov telescopes. Simulations show that a substantial improvement in angular resolution may be achieved if the pixel diameter is reduced to the order of 0.05 deg, i.e. two to three times smaller than the pixel diameter of current Cherenkov telescope cameras. At these dimensions, photon detectors with smaller physical dimensions can be attractive alternatives to the classical photomultiplier tube (PMT). Furthermore, the operation of an experiment with the size of AGIS requires photon detectors that are among other things more reliable, more durable, and possibly higher efficiency photon detectors. Alternative photon detectors we are considering for AGIS include both silicon photomultipliers (SiPMs) and multi-anode photomultipliers (MAPMTs). Here we present results from laboratory testing of MAPMTs and SiPMs along with results from the first incorporation of these devices into cameras on test bed Cherenkov telescopes.

Beam test results of the BTeV silicon pixel detector

DOE Office of Scientific and Technical Information (OSTI.GOV)

Gabriele Chiodini et al.

2000-09-28

The authors have described the results of the BTeV silicon pixel detector beam test. The pixel detectors under test used samples of the first two generations of Fermilab pixel readout chips, FPIX0 and FPIX1, (indium bump-bonded to ATLAS sensor prototypes). The spatial resolution achieved using analog charge information is excellent for a large range of track inclination. The resolution is still very good using only 2-bit charge information. A relatively small dependence of the resolution on bias voltage is observed. The resolution is observed to depend dramatically on the discriminator threshold, and it deteriorates rapidly for threshold above 4000e{sup {minus}}.

Multi-pinhole SPECT Imaging with Silicon Strip Detectors

PubMed Central

Peterson, Todd E.; Shokouhi, Sepideh; Furenlid, Lars R.; Wilson, Donald W.

2010-01-01

Silicon double-sided strip detectors offer outstanding instrinsic spatial resolution with reasonable detection efficiency for iodine-125 emissions. This spatial resolution allows for multiple-pinhole imaging at low magnification, minimizing the problem of multiplexing. We have conducted imaging studies using a prototype system that utilizes a detector of 300-micrometer thickness and 50-micrometer strip pitch together with a 23-pinhole collimator. These studies include an investigation of the synthetic-collimator imaging approach, which combines multiple-pinhole projections acquired at multiple magnifications to obtain tomographic reconstructions from limited-angle data using the ML-EM algorithm. Sub-millimeter spatial resolution was obtained, demonstrating the basic validity of this approach. PMID:20953300

Neutron detection with plastic scintillators coupled to solid state photomultiplier detectors

NASA Astrophysics Data System (ADS)

Christian, James F.; Johnson, Erik B.; Fernandez, Daniel E.; Vogel, Samuel; Frank, Rebecca; Stoddard, Graham; Stapels, Christopher; Pereira, Jorge; Zegers, Remco

2017-09-01

The recent reduction of dark current in Silicon Solid-state photomultipliers (SiSSPMs) makes them an attractive alternative to conventional photomultiplier tubes (PMTs) for scintillation detection applications. Nuclear Physics experiments often require large detector volumes made using scintillation materials, which require sensitive photodetectors, such as a PMTs. PMTs add to the size, fragility, and high-voltage requirements as well as distance requirements for experiments using magnetic fields. This work compares RMD's latest detector modules, denoted as the "year 2 prototype", of plastic scintillators that discriminate gamma and high-energy particle events from neutron events using pulse shape discrimination (PSD) coupled to a SiSSPM to the following two detector modules: a similar "year 1 prototype" and a scintillator coupled to a PMT module. It characterizes the noise floor, relative signal-to-noise ratio (SNR), the timing performance, the PSD figure-of-merit (FOM) and the neutron detection efficiency of RMD's detectors. This work also evaluates the scaling of SiSSPM detector modules to accommodate the volumes needed for many Nuclear Physics experiments. The Si SSPM detector module provides a clear advantage in Nuclear Physics experiments that require the following attributes: discrimination of neutron and gamma-ray events, operation in or near strong magnetic fields, and segmentation of the detector.

18F-FDG positron autoradiography with a particle counting silicon pixel detector.

PubMed

Russo, P; Lauria, A; Mettivier, G; Montesi, M C; Marotta, M; Aloj, L; Lastoria, S

2008-11-07

We report on tests of a room-temperature particle counting silicon pixel detector of the Medipix2 series as the detector unit of a positron autoradiography (AR) system, for samples labelled with (18)F-FDG radiopharmaceutical used in PET studies. The silicon detector (1.98 cm(2) sensitive area, 300 microm thick) has high intrinsic resolution (55 microm pitch) and works by counting all hits in a pixel above a certain energy threshold. The present work extends the detector characterization with (18)F-FDG of a previous paper. We analysed the system's linearity, dynamic range, sensitivity, background count rate, noise, and its imaging performance on biological samples. Tests have been performed in the laboratory with (18)F-FDG drops (37-37 000 Bq initial activity) and ex vivo in a rat injected with 88.8 MBq of (18)F-FDG. Particles interacting in the detector volume produced a hit in a cluster of pixels whose mean size was 4.3 pixels/event at 11 keV threshold and 2.2 pixels/event at 37 keV threshold. Results show a sensitivity for beta(+) of 0.377 cps Bq(-1), a dynamic range of at least five orders of magnitude and a lower detection limit of 0.0015 Bq mm(-2). Real-time (18)F-FDG positron AR images have been obtained in 500-1000 s exposure time of thin (10-20 microm) slices of a rat brain and compared with 20 h film autoradiography of adjacent slices. The analysis of the image contrast and signal-to-noise ratio in a rat brain slice indicated that Poisson noise-limited imaging can be approached in short (e.g. 100 s) exposures, with approximately 100 Bq slice activity, and that the silicon pixel detector produced a higher image quality than film-based AR.

Non-invasive characterization and quality assurance of silicon micro-strip detectors using pulsed infrared laser

NASA Astrophysics Data System (ADS)

Ghosh, P.

2016-01-01

The Compressed Baryonic Matter (CBM) experiment at FAIR is composed of 8 tracking stations consisting of roughly 1300 double sided silicon micro-strip detectors of 3 different dimensions. For the quality assurance of prototype micro-strip detectors a non-invasive detector charaterization is developed. The test system is using a pulsed infrared laser for charge injection and characterization, called Laser Test System (LTS). The system is aimed to develop a set of characterization procedures which are non-invasive (non-destructive) in nature and could be used for quality assurances of several silicon micro-strip detectors in an efficient, reliable and reproducible way. The procedures developed (as reported here) uses the LTS to scan sensors with a pulsed infra-red laser driven by step motor to determine the charge sharing in-between strips and to measure qualitative uniformity of the sensor response over the whole active area. The prototype detector modules which are tested with the LTS so far have 1024 strips with a pitch of 58 μm on each side. They are read-out using a self-triggering prototype read-out electronic ASIC called n-XYTER. The LTS is designed to measure sensor response in an automatized procedure at several thousand positions across the sensor with focused infra-red laser light (spot size ≈ 12 μm, wavelength = 1060 nm). The pulse with a duration of ≈ 10 ns and power ≈ 5 mW of the laser pulse is selected such, that the absorption of the laser light in the 300 μm thick silicon sensor produces ≈ 24000 electrons, which is similar to the charge created by minimum ionizing particles (MIP) in these sensors. The laser scans different prototype sensors and various non-invasive techniques to determine characteristics of the detector modules for the quality assurance is reported.

High-speed and high-efficiency travelling wave single-photon detectors embedded in nanophotonic circuits

PubMed Central

Pernice, W.H.P.; Schuck, C.; Minaeva, O.; Li, M.; Goltsman, G.N.; Sergienko, A.V.; Tang, H.X.

2012-01-01

Ultrafast, high-efficiency single-photon detectors are among the most sought-after elements in modern quantum optics and quantum communication. However, imperfect modal matching and finite photon absorption rates have usually limited their maximum attainable detection efficiency. Here we demonstrate superconducting nanowire detectors atop nanophotonic waveguides, which enable a drastic increase of the absorption length for incoming photons. This allows us to achieve high on-chip single-photon detection efficiency up to 91% at telecom wavelengths, repeatable across several fabricated chips. We also observe remarkably low dark count rates without significant compromise of the on-chip detection efficiency. The detectors are fully embedded in scalable silicon photonic circuits and provide ultrashort timing jitter of 18 ps. Exploiting this high temporal resolution, we demonstrate ballistic photon transport in silicon ring resonators. Our direct implementation of a high-performance single-photon detector on chip overcomes a major barrier in integrated quantum photonics. PMID:23271658

Properties of GaAs:Cr-based Timepix detectors

NASA Astrophysics Data System (ADS)

Smolyanskiy, P.; Bergmann, B.; Chelkov, G.; Kotov, S.; Kruchonak, U.; Kozhevnikov, D.; Mora Sierra, Y.; Stekl, I.; Zhemchugov, A.

2018-02-01

The hybrid pixel detector technology brought to the X-ray imaging a low noise level at a high spatial resolution, thanks to the single photon counting. However, silicon as the most widespread detector material is marginally sensitive to photons with energies above 30 keV. Therefore, the high-Z alternatives to silicon such as gallium arsenide and cadmium telluride are increasingly attracting attention of the community for the development of X-ray imaging systems. The results of our investigations of the Timepix detectors bump bonded to sensors made of gallium arsenide compensated by chromium (GaAs:Cr) are presented in this work. The following properties are most important from the practical point of view: the IV characteristics, the charge transport characteristics, photon detection efficiency, operational stability, homogeneity, temperature dependence, as well as energy and spatial resolution are considered. The applicability of these detectors for spectroscopic X-ray imaging is discussed.

Diamond detectors for high-temperature transactinide chemistry experiments

NASA Astrophysics Data System (ADS)

Steinegger, Patrick; Dressler, Rugard; Eichler, Robert; Piguet, Dave; Streuli, Silvan; Türler, Andreas

2017-04-01

Here, we present the fabrication details and functional tests of diamond-based α-spectroscopic sensors, dedicated for high-temperature experiments, targeting the chemistry of transactinide elements. Direct heating studies with this sensor material, revealed a current upper temperature threshold for a safe α-spectroscopic operation of Tdet = 453 K . Up to this temperature, the diamond sensor could be operated in a stable manner over long time periods of the order of days. A satisfying resolution of ≈ 50 keVFWHM was maintained throughout all conducted measurements. However, exceeding the mentioned temperature limit led to a pronounced spectroscopic degradation in the range of 453 - 473 K , thereby preventing any further α-spectroscopic application. These findings are in full agreement with available literature data. The presented detector development generally enables the chemical investigation of more short-lived and less volatile transactinide elements and their compounds, yet unreachable with the currently employed silicon-based solid state sensors. In a second part, the design, construction, and α-spectroscopic performance of a 4-segmented diamond detector, dedicated and used for transactinide element research, is given as an application example.

Analysis of periodically patterned metallic nanostructures for infrared absorber

NASA Astrophysics Data System (ADS)

Peng, Sha; Yuan, Ying; Long, Huabao; Liu, Runhan; Wei, Dong; Zhang, Xinyu; Wang, Haiwei; Xie, Changsheng

2018-02-01

With rapid advancement of infrared detecting technology in both military and civil domains, the photo-electronic performances of near-infrared detectors have been widely concerned. Currently, near-infrared detectors demonstrate some problems such as low sensitivity, low detectivity, and relatively small array scale. The current studies show that surface plasmons (SPs) stimulated over the surface of metallic nanostructures by incident light can be used to break the diffraction limit and thus concentrate light into sub-wavelength scale, so as to indicate a method to develop a new type of infrared absorber or detector with very large array. In this paper, we present the design and characterization of periodically patterned metallic nanostructures that combine nanometer thickness aluminum film with silicon wafer. Numerical computations show that there are some valleys caused by surface plasmons in the reflection spectrum in the infrared region, and both red shift and blue shift of the reflection spectrum were observed through changing the nanostructural parameters such as angle α and diameters D. Moreover, the strong E-field intensity is located at the sharp corner of the nano-structures.

Integration of Si-CMOS embedded photo detector array and mixed signal processing system with embedded optical waveguide input

NASA Astrophysics Data System (ADS)

Kim, Daeik D.; Thomas, Mikkel A.; Brooke, Martin A.; Jokerst, Nan M.

2004-06-01

Arrays of embedded bipolar junction transistor (BJT) photo detectors (PD) and a parallel mixed-signal processing system were fabricated as a silicon complementary metal oxide semiconductor (Si-CMOS) circuit for the integration optical sensors on the surface of the chip. The circuit was fabricated with AMI 1.5um n-well CMOS process and the embedded PNP BJT PD has a pixel size of 8um by 8um. BJT PD was chosen to take advantage of its higher gain amplification of photo current than that of PiN type detectors since the target application is a low-speed and high-sensitivity sensor. The photo current generated by BJT PD is manipulated by mixed-signal processing system, which consists of parallel first order low-pass delta-sigma oversampling analog-to-digital converters (ADC). There are 8 parallel ADCs on the chip and a group of 8 BJT PDs are selected with CMOS switches. An array of PD is composed of three or six groups of PDs depending on the number of rows.

Implementation of a 4x8 NIR and CCD Mosaic Focal Plane Technology

NASA Astrophysics Data System (ADS)

Jelinsky, Patrick; Bebek, C. J.; Besuner, R. W.; Haller, G. M.; Harris, S. E.; Hart, P. A.; Heetderks, H. D.; Levi, M. E.; Maldonado, S. E.; Roe, N. A.; Roodman, A. J.; Sapozhnikov, L.

2011-01-01

Mission concepts for NASA's Wide Field Infrared Survey Telescope (WFIRST), ESA's EUCLID mission, as well as for ground based observations, have requirements for large mosaic focal planes to image visible and near infrared (NIR) wavelengths. We have developed detectors, readout electronics and focal plane design techniques that can be used to create very large scalable focal plane mosaic cameras. In our technology, CCDs and HgCdTe detectors can be intermingled on a single, silicon carbide (SiC) cold plate. This enables optimized, wideband observing strategies. The CCDs, developed at Lawrence Berkeley National Laboratory, are fully-depleted, p-channel devices that are backside illuminated capable of operating at temperatures as low as 110K and have been optimized for the weak lensing dark energy technique. The NIR detectors are 1.7µm and 2.0µm wavelength cutoff H2RG® HgCdTe, manufactured by Teledyne Imaging Sensors under contract to LBL. Both the CCDs and NIR detectors are packaged on 4-side abuttable SiC pedestals with a common mounting footprint supporting a 44.16mm mosaic pitch and are coplanar. Both types of detectors have direct-attached, readout electronics that convert the detector signal directly to serial, digital data streams and allow a flexible, low cost data acquisition strategy, despite the large data volume. A mosaic of these detectors can be operated at a common temperature that achieves the required dark current and read noise performance in both types of detectors necessary for dark energy observations. We report here the design and integration for a focal plane designed to accommodate a 4x8 heterogeneous array of CCDs and HgCdTe detectors. Our current implementation contains over 1/4-billion pixels.

Development and Production of Array Barrier Detectors at SCD

NASA Astrophysics Data System (ADS)

Klipstein, P. C.; Avnon, E.; Benny, Y.; Berkowicz, E.; Cohen, Y.; Dobromislin, R.; Fraenkel, R.; Gershon, G.; Glozman, A.; Hojman, E.; Ilan, E.; Karni, Y.; Klin, O.; Kodriano, Y.; Krasovitsky, L.; Langof, L.; Lukomsky, I.; Nevo, I.; Nitzani, M.; Pivnik, I.; Rappaport, N.; Rosenberg, O.; Shtrichman, I.; Shkedy, L.; Snapi, N.; Talmor, R.; Tessler, R.; Weiss, E.; Tuito, A.

2017-09-01

XB n or XB p barrier detectors exhibit diffusion-limited dark currents comparable with mercury cadmium telluride Rule-07 and high quantum efficiencies. In 2011, SemiConductor Devices (SCD) introduced "HOT Pelican D", a 640 × 512/15- μm pitch InAsSb/AlSbAs XB n mid-wave infrared (MWIR) detector with a 4.2- μm cut-off and an operating temperature of ˜150 K. Its low power (˜3 W), high pixel operability (>99.5%) and long mean time to failure make HOT Pelican D a highly reliable integrated detector-cooler product with a low size, weight and power. More recently, "HOT Hercules" was launched with a 1280 × 1024/15- μm format and similar advantages. A 3-megapixel, 10- μm pitch version ("HOT Blackbird") is currently completing development. For long-wave infrared applications, SCD's 640 × 512/15- μm pitch "Pelican-D LW" XB p type II superlattice (T2SL) detector has a ˜9.3- μm cut-off wavelength. The detector contains InAs/GaSb and InAs/AlSb T2SLs, and is fabricated into focal plane array (FPA) detectors using standard production processes including hybridization to a digital silicon read-out integrated circuit (ROIC), glue underfill and substrate thinning. The ROIC has been designed so that the complete detector closely follows the interfaces of SCD's MWIR Pelican-D detector family. The Pelican-D LW FPA has a quantum efficiency of ˜50%, and operates at 77 K with a pixel operability of >99% and noise equivalent temperature difference of 13 mK at 30 Hz and F/2.7.

Tests of a Roman Pot prototype for the TOTEM experiment

NASA Astrophysics Data System (ADS)

Deile, M.; Alagoz, E.; Anelli, G.; Antchev, G.; Ayache, M.; Caspers, F.; Dimovasili, E.; Dinapoli, R.; Drouhin, F.; Eggert, K.; Escourrou, J.L; Fochler, O.; Gill, K.; Grabit, R.; Haung, F.; Jarron, P.; Kaplon, J.; Kroyer, T.; Luntama, T.; Macina, D.; Mattelon, E.; Niewiadomski, H.; Mirabito, L.; Noschis, E.P.; Oriunno, M.; Park, a.; Perrot, A.-L.; Pirotte, O.; Quetsch, J.M.; Regnier, F.; Ruggiero, G.; Saramad, S.; Siegrist, P.; Snoeys, W.; sSouissi, T.; Szczygiel, R.; Troska, J.; Vasey, F.; Verdier, A.; Da Vià, C.; Hasi, J.; Kok, A.; Watts, S.; Kašpar, J.; Kundrát, V.; Lokajíček, M.V.; Smotlacha, J.; Avati, V.; Järvinen, M.; Kalliokoski, M.; Kalliopuska, J.; Kurvinen, K.; Lauhakangas, R.; Oljemark, F.; Orava, R.; Österberg, K.; Palmieri, V.; Saarikko, H.; Soininen, A.; Boccone, V.; Bozzo, M.; Buzzo, A.; Cuneo, S.; Ferro, F.; Macrí, M.; Minutoli, S.; Morelli, A.; Musico, P.; Negri, M.; Santroni, A.; Sette, G.; Sobol, A.; sBerardi, V.; Catanesi, M.G.; Radicioni, E.

The TOTEM collaboration has developed and tested the first prototype of its Roman Pots to be operated in the LHC. TOTEM Roman Pots contain stacks of 10 silicon detectors with strips oriented in two orthogonal directions. To measure proton scattering angles of a few microradians, the detectors will approach the beam centre to a distance of 10 sigma + 0.5 mm (= 1.3 mm). Dead space near the detector edge is minimised by using two novel "edgeless" detector technologies. The silicon detectors are used both for precise track reconstruction and for triggering. The first full-sized prototypes of both detector technologies as well as their read-out electronics have been developed, built and operated. The tests took place first in a fixed-target muon beam at CERN's SPS, and then in the proton beam-line of the SPS accelerator ring. We present the test beam results demonstrating the successful functionality of the system despite slight technical shortcomings to be improved in the near future.

Investigation of the thickness non-uniformity of the very thin silicon-strip detectors

NASA Astrophysics Data System (ADS)

Liu, Qiang; Ye, Yanlin; Li, Zhihuan; Lin, Chengjian; Jia, Huiming; Ge, Yucheng; Li, Qite; Lou, Jianling; Yang, Xiaofei; Yang, Biao; Feng, Jun; Zang, Hongliang; Chen, Zhiqiang; Liu, Yang; Liu, Wei; Chen, Sidong; Yu, Hanzhou; Li, Jingjing; Zhang, Yun; Yang, Feng; Yang, Lei; Ma, Nanru; Sun, Lijie; Wang, Dongxi

2018-07-01

The properties of some very thin (∼ 20 μm) large-area Single-sided Silicon-Strip Detectors (SSSDs) were investigated by using the 12C-particles elastically scattered from a Au target. In the detection system, each thin SSSD was installed in front of a thick (300 μm or 500 μm) Double-sided Silicon-Strip Detector (DSSD) to form a ΔE - E particle-telescope. The energy calibration of these detectors was realized by varying the beam energy and also by the irradiation from a three-component α-particle source. The thickness distribution each SSSD is precisely determined from the energy loss in the thin layer, which was independently measured by the corresponding DSSD. It is found that, for the SSSD with the nominal thicknesses of ∼ 20 μm, the real thickness may vary by several μm over the active area. The reason for this large non-uniformity still needs to be investigated. For the present application, this non-uniformity could be corrected according to the known pixel-thickness. This correction allows to restore a good particle identification (PID) performance for the entire large-area detector, the importance of which is demonstrated by an example of measuring the cluster-decays of the highly-excited resonant states in 16O.

Experience of Application of Silicon Matrix as a Charge Detector in the ATIC Experiment

NASA Technical Reports Server (NTRS)

Zatsepin, V. I.; Adams, J. H.; Christl, M. J.

2003-01-01

The Advanced Thin Ionization Calorimeter (ATIC) was built for series of long-duration balloon flights in Antarctica. Its main goal is to measure energy spectra of cosmic ray nuclei from protons up to iron nuclei in the wide range of their energy from 30 GeV up to 100 TeV. The ATIC balloon experiment had its first, test flight that lasted for 16 days from 28 Dec 2000 to 13 Jan 2001 around the South Pole. The ATIC spectrometer consists of a fully active BGO calorimeter, scintillator hodoscopes and a silicon matrix. The silicon matrix consisted of 4480 pixels was used as a charge detector in the experiment. About 25 million cosmic ray events were detected during the flight. In the paper, the charge spectrum obtained with the silicon matrix is analyzed.

The Vacuum Silicon Photomultiplier Tube (VSiPMT): A new version of a hybrid photon detector

NASA Astrophysics Data System (ADS)

Russo, Stefano; Barbarino, Giancarlo; de Asmundis, Riccardo; De Rosa, Gianfranca

2010-11-01

The future astroparticle experiments will study both energetic phenomena and extremely rare events from astrophysical sources. Since most of these families of experiments are carried out by using scintillation phenomena, Cherenkov or fluorescence radiation, the development of photosensitive detectors seems to be the right way to increase the experimental sensitivity. Therefore we propose an innovative design for a modern, high gain, silicon-based Vacuum Silicon Photomultiplier Tube (VSiPMT), which combines three fully established and well-understood technologies: the manufacture of hemispherical vacuum tubes with the possibility of very large active areas, the photocathode glass deposition and the novel Geiger-mode avalanche silicon photodiode (G-APD) for which a mass production is today available. This new design, based on G-APD as the electron multiplier, allows overcoming the limits of a classical PMT dynode chain.

Modeling silicon diode energy response factors for use in therapeutic photon beams.

PubMed

Eklund, Karin; Ahnesjö, Anders

2009-10-21

Silicon diodes have good spatial resolution, which makes them advantageous over ionization chambers for dosimetry in fields with high dose gradients. However, silicon diodes overrespond to low-energy photons, that are more abundant in scatter which increase with large fields and larger depths. We present a cavity-theory-based model for a general response function for silicon detectors at arbitrary positions within photon fields. The model uses photon and electron spectra calculated from fluence pencil kernels. The incident photons are treated according to their energy through a bipartition of the primary beam photon spectrum into low- and high-energy components. Primary electrons from the high-energy component are treated according to Spencer-Attix cavity theory. Low-energy primary photons together with all scattered photons are treated according to large cavity theory supplemented with an energy-dependent factor K(E) to compensate for energy variations in the electron equilibrium. The depth variation of the response for an unshielded silicon detector has been calculated for 5 x 5 cm(2), 10 x 10 cm(2) and 20 x 20 cm(2) fields in 6 and 15 MV beams and compared with measurements showing that our model calculates response factors with deviations less than 0.6%. An alternative method is also proposed, where we show that one can use a correlation with the scatter factor to determine the detector response of silicon diodes with an error of less than 3% in 6 MV and 15 MV photon beams.

Photon counting microstrip X-ray detectors with GaAs sensors

NASA Astrophysics Data System (ADS)

Ruat, M.; Andrä, M.; Bergamaschi, A.; Barten, R.; Brückner, M.; Dinapoli, R.; Fröjdh, E.; Greiffenberg, D.; Lopez-Cuenca, C.; Lozinskaya, A. D.; Mezza, D.; Mozzanica, A.; Novikov, V. A.; Ramilli, M.; Redford, S.; Ruder, C.; Schmitt, B.; Shi, X.; Thattil, D.; Tinti, G.; Tolbanov, O. P.; Tyazhev, A.; Vetter, S.; Zarubin, A. N.; Zhang, J.

2018-01-01

High-Z sensors are increasingly used to overcome the poor efficiency of Si sensors above 15 keV, and further extend the energy range of synchrotron and FEL experiments. Detector-grade GaAs sensors of 500 μm thickness offer 98% absorption efficiency at 30 keV and 50% at 50 keV . In this work we assess the usability of GaAs sensors in combination with the MYTHEN photon-counting microstrip readout chip developed at PSI. Different strip length and pitch are compared, and the detector performance is evaluated in regard of the sensor material properties. Despite increased leakage current and noise, photon-counting strips mounted with GaAs sensors can be used with photons of energy as low as 5 keV, and exhibit excellent linearity with energy. The charge sharing is doubled as compared to silicon strips, due to the high diffusion coefficient of electrons in GaAs.

The first bump-bonded pixel detectors on CVD diamond

NASA Astrophysics Data System (ADS)

Adam, W.; Bauer, C.; Berdermann, E.; Bergonzo, P.; Bogani, F.; Borchi, E.; Brambilla, A.; Bruzzi, M.; Colledani, C.; Conway, J.; Dabrowski, W.; Delpierre, P.; Deneuville, A.; Dulinski, W.; van Eijk, B.; Fallou, A.; Fizzotti, F.; Foulon, F.; Friedl, M.; Gan, K. K.; Gheeraert, E.; Grigoriev, E.; Hallewell, G.; Hall-Wilton, R.; Han, S.; Hartjes, F.; Hrubec, J.; Husson, D.; Kagan, H.; Kania, D.; Kaplon, J.; Karl, C.; Kass, R.; Krammer, M.; Logiudice, A.; Lu, R.; Manfredi, P. F.; Manfredotti, C.; Marshall, R. D.; Meier, D.; Mishina, M.; Oh, A.; Palmieri, V. G.; Pan, L. S.; Peitz, A.; Pernicka, M.; Pirollo, S.; Polesello, P.; Pretzl, K.; Re, V.; Riester, J. L.; Roe, S.; Roff, D.; Rudge, A.; Schnetzer, S.; Sciortino, S.; Speziali, V.; Stelzer, H.; Steuerer, J.; Stone, R.; Tapper, R. J.; Tesarek, R.; Trawick, M.; Trischuk, W.; Turchetta, R.; Vittone, E.; Wagner, A.; Walsh, A. M.; Wedenig, R.; Weilhammer, P.; Zeuner, W.; Ziock, H.; Zoeller, M.; Charles, E.; Ciocio, A.; Dao, K.; Einsweiler, K.; Fasching, D.; Gilchriese, M.; Joshi, A.; Kleinfelder, S.; Milgrome, O.; Palaio, N.; Richardson, J.; Sinervo, P.; Zizka, G.; RD42 Collaboration

1999-11-01

Diamond is a nearly ideal material for detecting ionising radiation. Its outstanding radiation hardness, fast charge collection and low leakage current allow it to be used in high radiation environments. These characteristics make diamond sensors particularly appealing for use in the next generation of pixel detectors. Over the last year, the RD42 collaboration has worked with several groups that have developed pixel readout electronics in order to optimise diamond sensors for bump-bonding. This effort resulted in an operational diamond pixel sensor that was tested in a pion beam. We demonstrate that greater than 98% of the channels were successfully bump-bonded and functioning. The device shows good overall hit efficiency as well as clear spatial hit correlation to tracks measured in a silicon reference telescope. A position resolution of 14.8 μm was observed, consistent with expectations given the detector pitch.

CAPRICE98: a balloon-borne magnetic spectrometer equipped with a gas RICH and a silicon calorimeter to study cosmic rays

NASA Astrophysics Data System (ADS)

Barbiellini, G.; Bartalucci, S.; Bellotti, R.; Bergström, D.; Bidoli, V.; Boezio, M.; Bonvicini, V.; Bravar, U.; Cafagna, F.; Carlson, P.; Casolino, M.; Ciacio, F.; Circella, M.; De Marzo, C.; De Pascale, M. P.; Finetti, N.; Francke, T.; Grinstein, S.; Hof, M.; Khalchukov, F.; Kremer, J.; Menn, W.; Mitchell, J. W.; Morselli, A.; Ormes, J. F.; Papini, P.; Piccardi, S.; Picozza, P.; Ricci, M.; Simon, M.; Schiavon, P.; Sparvoli, R.; Spillantini, P.; Stochaj, S. J.; Streitmatter, R. E.; Stephens, S. A.; Suffert, M.; Vacchi, A.; Weber, N.; Zampa, N.

2001-04-01

CAPRICE98 is a superconducting magnetic spectrometer, equipped with a gas RICH and a silicon calorimeter, launched from Ft. Sumner (USA), on the 28th of May 1998, by the WiZard collaboration. For the first time a gas RICH detector flew together with a silicon electromagnetic calorimeter, allowing mass resolved antiprotons, with E>18 GeV, to be detected. The detector configuration was completed by a time of flight for particle identification, and a set of three drift chambers for rigidity measurement. The science objectives are the study of antimatter in cosmic rays and the cosmic ray composition in the atmosphere with special focus on muons.

Microminiature gas chromatograph

DOEpatents

Yu, C.M.

1996-12-10

A microminiature gas chromatograph ({mu}GC) comprising a least one silicon wafer, a gas injector, a column, and a detector. The gas injector has a normally closed valve for introducing a mobile phase including a sample gas in a carrier gas. The valve is fully disposed in the silicon wafer(s). The column is a microcapillary in silicon crystal with a stationary phase and is mechanically connected to receive the mobile phase from the gas injector for the molecular separation of compounds in the sample gas. The detector is mechanically connected to the column for the analysis of the separated compounds of sample gas with electronic means, e.g., ion cell, field emitter and PIN diode. 7 figs.

SiD Linear Collider Detector R&D, DOE Final Report

DOE Office of Scientific and Technical Information (OSTI.GOV)

Brau, James E.; Demarteau, Marcel

2015-05-15

The Department of Energy’s Office of High Energy Physics supported the SiD university detector R&D projects in FY10, FY11, and FY12 with no-cost extensions through February, 2015. The R&D projects were designed to advance the SiD capabilities to address the fundamental questions of particle physics at the International Linear Collider (ILC): • What is the mechanism responsible for electroweak symmetry breaking and the generation of mass? • How do the forces unify? • Does the structure of space-time at small distances show evidence for extra dimensions? • What are the connections between the fundamental particles and forces and cosmology? Siliconmore » detectors are used extensively in SiD and are well-matched to the challenges presented by ILC physics and the ILC machine environment. They are fast, robust against machine-induced background, and capable of very fine segmentation. SiD is based on silicon tracking and silicon-tungsten sampling calorimetry, complemented by powerful pixel vertex detection, and outer hadronic calorimetry and muon detection. Radiation hard forward detectors which can be read out pulse by pulse are required. Advanced calorimetry based on a particle flow algorithm (PFA) provides excellent jet energy resolution. The 5 Tesla solenoid is outside the calorimeter to improve energy resolution. PFA calorimetry requires fine granularity for both electromagnetic and hadronic calorimeters, leading naturally to finely segmented silicon-tungsten electromagnetic calorimetry. Since silicon-tungsten calorimetry is expensive, the detector architecture is compact. Precise tracking is achieved with the large magnetic field and high precision silicon microstrips. An ancillary benefit of the large magnetic field is better control of the e⁺e⁻ pair backgrounds, permitting a smaller radius beampipe and improved impact parameter resolution. Finally, SiD is designed with a cost constraint in mind. Significant advances and new capabilities have been made and are described in this report.« less

Monitoring of the Irradiated Neutron Fluence in the Neutron Transmutation Doping Process of Hanaro

NASA Astrophysics Data System (ADS)

Kim, Myong-Seop; Park, Sang-Jun

2009-08-01

Neutron transmutation doping (NTD) for silicon is a process of the creation of phosphorus impurities in intrinsic or extrinsic silicon by neutron irradiation to obtain silicon semiconductors with extremely uniform dopant distribution. HANARO has two vertical holes for the NTD, and the irradiation for 5 and 6 inch silicon ingots has been going on at one hole. In order to achieve the accurate neutron fluence corresponding to the target resistivity, the real time neutron flux is monitored by self-powered neutron detectors. After irradiation, the total irradiation fluence is confirmed by measuring the absolute activity of activation detectors. In this work, a neutron fluence monitoring method using zirconium foils with the mass of 10 ~ 50 mg was applied to the NTD process of HANARO. We determined the proportional constant of the relationship between the resistivity of the irradiated silicon and the neutron fluence determined by using zirconium foils. The determined constant for the initially n-type silicon was 3.126 × 1019 n·Ω/cm. It was confirmed that the difference between this empirical value and the theoretical one was only 0.5%. Conclusively, the practical methodology to perform the neutron transmutation doping of silicon was established.

Waveguide-integrated single- and multi-photon detection at telecom wavelengths using superconducting nanowires

DOE Office of Scientific and Technical Information (OSTI.GOV)

Ferrari, Simone; Kahl, Oliver; Kovalyuk, Vadim

We investigate single- and multi-photon detection regimes of superconducting nanowire detectors embedded in silicon nitride nanophotonic circuits. At near-infrared wavelengths, simultaneous detection of up to three photons is observed for 120 nm wide nanowires biased far from the critical current, while narrow nanowires below 100 nm provide efficient single photon detection. A theoretical model is proposed to determine the different detection regimes and to calculate the corresponding internal quantum efficiency. The predicted saturation of the internal quantum efficiency in the single photon regime agrees well with plateau behavior observed at high bias currents.

Edge-on illumination photon-counting for medical imaging

NASA Astrophysics Data System (ADS)

Doni, M.; Visser, J.; Koffeman, E.; Herrmann, C.

2015-08-01

In medical X-ray Computed Tomography (CT) a silicon based sensor (300-1000 μm) in face-on configuration does not collect the incoming X-rays effectively because of their high energy (40-140 keV). For example, only 2% of the incoming photons at 100 keV are stopped by a 500 μm thick silicon layer. To increase the efficiency, one possibility is to use materials with higher Z (e.g. GaAs, CZT), which have some drawbacks compared to silicon, such as short carrier lifetime or low mobility. Therefore, we investigate whether illuminating silicon edge-on instead of face-on is a solution. Aim of the project is to find and take advantage of the benefits of this new geometry when used for a pixel detector. In particular, we employ a silicon hybrid pixel detector, which is read out by a chip from the Medipix family. Its capabilities to be energy selective will be a notable advantage in energy resolved (spectral) X-ray CT.

Enhancing the far-ultraviolet sensitivity of silicon complementary metal oxide semiconductor imaging arrays

NASA Astrophysics Data System (ADS)

Retherford, Kurt D.; Bai, Yibin; Ryu, Kevin K.; Gregory, James A.; Welander, Paul B.; Davis, Michael W.; Greathouse, Thomas K.; Winters, Gregory S.; Suntharalingam, Vyshnavi; Beletic, James W.

2015-10-01

We report our progress toward optimizing backside-illuminated silicon P-type intrinsic N-type complementary metal oxide semiconductor devices developed by Teledyne Imaging Sensors (TIS) for far-ultraviolet (UV) planetary science applications. This project was motivated by initial measurements at Southwest Research Institute of the far-UV responsivity of backside-illuminated silicon PIN photodiode test structures, which revealed a promising QE in the 100 to 200 nm range. Our effort to advance the capabilities of thinned silicon wafers capitalizes on recent innovations in molecular beam epitaxy (MBE) doping processes. Key achievements to date include the following: (1) representative silicon test wafers were fabricated by TIS, and set up for MBE processing at MIT Lincoln Laboratory; (2) preliminary far-UV detector QE simulation runs were completed to aid MBE layer design; (3) detector fabrication was completed through the pre-MBE step; and (4) initial testing of the MBE doping process was performed on monitoring wafers, with detailed quality assessments.

Note: Broadband low-noise photodetector for Pound-Drever-Hall laser stabilization

NASA Astrophysics Data System (ADS)

Potnis, Shreyas; Vutha, Amar C.

2016-07-01

The Pound-Drever-Hall laser stabilization technique requires a fast, low-noise photodetector. We present a simple photodetector design that uses a transformer as an intermediary between a photodiode and cascaded low-noise radio-frequency amplifiers. Our implementation using a silicon photodiode yields a detector with 50 MHz bandwidth, gain >105 V/A, and input current noise <4 pA/ √{ Hz } , allowing us to obtain shot-noise-limited performance with low optical power.

Techniques For Mass Production Of Tunneling Electrodes

NASA Technical Reports Server (NTRS)

Kenny, Thomas W.; Podosek, Judith A.; Reynolds, Joseph K.; Rockstad, Howard K.; Vote, Erika C.; Kaiser, William J.

1993-01-01

Techniques for mass production of tunneling electrodes developed from silicon-micromachining, lithographic patterning, and related microfabrication processes. Tunneling electrodes named because electrons travel between them by quantum-mechanical tunneling; tunneling electrodes integral parts of tunneling transducer/sensors, which act in conjunction with feedback circuitry to stabilize tunneling currents by maintaining electrode separations of order of 10 Angstrom. Essential parts of scanning tunneling microscopes and related instruments, and used as force and position transducers in novel microscopic accelerometers and infrared detectors.

SuperCDMS Prototype Detector Design and Testing

DOE Office of Scientific and Technical Information (OSTI.GOV)

Kennedy, Allison Blair

A substantial amount of astrophysical evidence indicates that approximately a quarter of all energy in the universe is composed of a nonluminous, and nonbaryonic \\dark" matter. Of the potential dark matter particle candidates, Weakly Interacting Massive Particles, or WIMPs, is particularly well motivated. As a means to directly detect WIMP interactions with baryonic matter, the Cryogenic Dark Matter Search (CDMS) project was established, operating at the Soudan Underground Laboratory from 2003 - 2015, under the CDMS II and SuperCDMS Soudan experiments. CDMS detectors simultaneously measure the ionization and phonon energies of recoil events in Si and Ge crystals kept atmore » cryogenic temperatures in a low-background environment. The ratio of ionization energy to recoil energy serves as a discrimination parameter to separate nuclear recoil events from the electron-recoil background. The next installation, SuperCDMS SNOLAB, is preparing for future operation, with an initial payload of eighteen Ge and six Si, 100 mm diameter, 33 mm thick detectors. Of this initial payload, eight Ge and four Si detectors will operate in a high-voltage ( 100 V) mode, which have an increased sensitivity to low-mass WIMPs due to decreased energy thresholds. The SuperCDMS test facility at University of Minnesota aids in the detector R&D and characterization of prototype detectors, as part of the scale-up eort for Super- CDMS SNOLAB. This thesis presents the rst full ionization and phonon characterization study of a 100 mm diameter, 33 mm thick prototype Ge detector with interleaved phonon and ionization channels. Measurements include ionization collection eciency, surface event rejection capabilities, and successful demonstration of nuclear recoil event discrimination. Results indicate that 100 mm diameter, interleaved Ge detectors show potential for use in SuperCDMS SNOLAB. As part of detector R&D, the Minnesota test facility also looks beyond the next stage of SuperCDMS, investigating larger individual detectors as a means to easily scale up the sensitive mass of future searches. This thesis presents the design and initial testing results of a prototype 150 mm diameter, 33 mm thick silicon ionization detector, which is 5.2 times larger than those used in SuperCDMS at Soudan and 2.25 times larger than those planned for use at SuperCDMS SNOLAB. In addition, the detector was operated with contact-free ionization electrodes to minimize bias leakage currents, which can limit operation at high bias voltages. The results show promise for the operation of both large volume silicon detectors and contact-free ionization electrodes for scaling up detector mass and bias.« less

Dark-field image contrast in transmission scanning electron microscopy: Effects of substrate thickness and detector collection angle.

PubMed

Woehl, Taylor; Keller, Robert

2016-12-01

An annular dark field (ADF) detector was placed beneath a specimen in a field emission scanning electron microscope operated at 30kV to calibrate detector response to incident beam current, and to create transmission images of gold nanoparticles on silicon nitride (SiN) substrates of various thicknesses. Based on the linear response of the ADF detector diodes to beam current, we developed a method that allowed for direct determination of the percentage of that beam current forward scattered to the ADF detector from the sample, i.e. the transmitted electron (TE) yield. Collection angles for the ADF detector region were defined using a masking aperture above the detector and were systematically varied by changing the sample to detector distance. We found the contrast of the nanoparticles, relative to the SiN substrate, decreased monotonically with decreasing inner exclusion angle and increasing substrate thickness. We also performed Monte Carlo electron scattering simulations, which showed quantitative agreement with experimental contrast associated with the nanoparticles. Together, the experiments and Monte Carlo simulations revealed that the decrease in contrast with decreasing inner exclusion angle was due to a rapid increase in the TE yield of the low atomic number substrate. Nanoparticles imaged at low inner exclusion angles (<150mrad) and on thick substrates (>50nm) showed low image contrast in their centers surrounded by a bright high-contrast halo on their edges. This complex image contrast was predicted by Monte Carlo simulations, which we interpreted in terms of mixing of the nominally bright field (BF) and ADF electron signals. Our systematic investigation of inner exclusion angle and substrate thickness effects on ADF t-SEM imaging provides fundamental understanding of the contrast mechanisms for image formation, which in turn suggest practical limitations and optimal imaging conditions for different substrate thicknesses. Copyright © 2016. Published by Elsevier B.V.

Silicon nitride films fabricated by a plasma-enhanced chemical vapor deposition method for coatings of the laser interferometer gravitational wave detector

NASA Astrophysics Data System (ADS)

Pan, Huang-Wei; Kuo, Ling-Chi; Huang, Shu-Yu; Wu, Meng-Yun; Juang, Yu-Hang; Lee, Chia-Wei; Chen, Hsin-Chieh; Wen, Ting Ting; Chao, Shiuh

2018-01-01

Silicon is a potential substrate material for the large-areal-size mirrors of the next-generation laser interferometer gravitational wave detector operated in cryogenics. Silicon nitride thin films uniformly deposited by a chemical vapor deposition method on large-size silicon wafers is a common practice in the silicon integrated circuit industry. We used plasma-enhanced chemical vapor deposition to deposit silicon nitride films on silicon and studied the physical properties of the films that are pertinent to application of mirror coatings for laser interferometer gravitational wave detectors. We measured and analyzed the structure, optical properties, stress, Young's modulus, and mechanical loss of the films, at both room and cryogenic temperatures. Optical extinction coefficients of the films were in the 10-5 range at 1550-nm wavelength. Room-temperature mechanical loss of the films varied in the range from low 10-4 to low 10-5 within the frequency range of interest. The existence of a cryogenic mechanical loss peak depended on the composition of the films. We measured the bond concentrations of N - H , Si - H , Si - N , and Si - Si bonds in the films and analyzed the correlations between bond concentrations and cryogenic mechanical losses. We proposed three possible two-level systems associated with the N - H , Si - H , and Si - N bonds in the film. We inferred that the dominant source of the cryogenic mechanical loss for the silicon nitride films is the two-level system of exchanging position between a H+ and electron lone pair associated with the N - H bond. Under our deposition conditions, superior properties in terms of high refractive index with a large adjustable range, low optical absorption, and low mechanical loss were achieved for films with lower nitrogen content and lower N - H bond concentration. Possible pairing of the silicon nitride films with other materials in the quarter-wave stack is discussed.

Study the performance of LYSO and CeBr3 crystals using Silicon Photomultipliers

NASA Astrophysics Data System (ADS)

Kryemadhi, Abaz

2016-03-01

The Silicon Photomultipliers (SiPMs) are novel photon-detectors which have been progressively found their use in particle physics. Their small size, good single photon resolution, simple readout, and immunity to magnetic fields offers advantages compared to traditional photomultipliers. LYSO and CeBr3 crystals are relatively new scintillators with high light yield and fast decay time. The response of these detectors to low energy gamma rays and cosmic ray muons will be presented. Messiah College Workload Reallocation Program.

MR-compatibility assessment of the first preclinical PET-MRI insert equipped with digital silicon photomultipliers.

PubMed

Wehner, J; Weissler, B; Dueppenbecker, P M; Gebhardt, P; Goldschmidt, B; Schug, D; Kiessling, F; Schulz, V

2015-03-21

PET (positron emission tomography) with its high sensitivity in combination with MRI (magnetic resonance imaging) providing anatomic information with good soft-tissue contrast is considered to be a promising hybrid imaging modality. However, the integration of a PET detector into an MRI system is a challenging task since the MRI system is a sensitive device for external disturbances and provides a harsh environment for electronic devices. Consequently, the PET detector has to be transparent for the MRI system and insensitive to electromagnetic disturbances. Due to the variety of MRI protocols imposing a wide range of requirements regarding the MR-compatibility, an extensive study is mandatory to reliably assess worst-case interference phenomena between the PET detector and the MRI scanner. We have built the first preclinical PET insert, designed for a clinical 3 T MRI, using digital silicon photomultipliers (digital SiPM, type DPC 3200-22, Philips Digital Photon Counting). Since no thorough interference investigation with this new digital sensor has been reported so far, we present in this work such a comprehensive MR-compatibility study. Acceptable distortion of the B0 field homogeneity (volume RMS = 0.08 ppm, peak-to-peak value = 0.71 ppm) has been found for the PET detector installed. The signal-to-noise ratio degradation stays between 2-15% for activities up to 21 MBq. Ghosting artifacts were only found for demanding EPI (echo planar imaging) sequences with read-out gradients in Z direction caused by additional eddy currents originated from the PET detector. On the PET side, interference mainly between the gradient system and the PET detector occurred: extreme gradient tests were executed using synthetic sequences with triangular pulse shape and maximum slew rate. Under this condition, a relative degradation of the energy (⩽10%) and timing (⩽15%) resolution was noticed. However, barely measurable performance deterioration occurred when morphological MRI protocols are conducted certifying that the overall PET performance parameters remain unharmed.

A MAPS Based Micro-Vertex Detector for the STAR Experiment

DOE PAGES

Schambach, Joachim; Anderssen, Eric; Contin, Giacomo; ...

2015-06-18

For the 2014 heavy ion run of RHIC a new micro-vertex detector called the Heavy Flavor Tracker (HFT) was installed in the STAR experiment. The HFT consists of three detector subsystems with various silicon technologies arranged in 4 approximately concentric cylinders close to the STAR interaction point designed to improve the STAR detector’s vertex resolution and extend its measurement capabilities in the heavy flavor domain. The two innermost HFT layers are placed at radii of 2.8 cm and 8 cm from the beam line. These layers are constructed with 400 high resolution sensors based on CMOS Monolithic Active Pixel Sensormore » (MAPS) technology arranged in 10-sensor ladders mounted on 10 thin carbon fiber sectors to cover a total silicon area of 0.16 m 2. Each sensor of this PiXeL (“PXL”) sub-detector combines a pixel array of 928 rows and 960 columns with a 20.7 μm pixel pitch together with front-end electronics and zero-suppression circuitry in one silicon die providing a sensitive area of ~3.8 cm 2. This sensor architecture features 185.6 μs readout time and 170 mW/cm 2 power dissipation. This low power dissipation allows the PXL detector to be air-cooled, and with the sensors thinned down to 50 μm results in a global material budget of only 0.4% radiation length per layer. A novel mechanical approach to detector insertion allows us to effectively install and integrate the PXL sub-detector within a 12 hour period during an on-going multi-month data taking period. The detector requirements, architecture and design, as well as the performance after installation, are presented in this paper.« less

"Characterization of ELEKTA SRS cone collimator using high spatial resolution monolithic silicon detector array".

PubMed

Shukaili, Khalsa Al; Corde, Stéphanie; Petasecca, Marco; Pereveratylo, Vladimir; Lerch, Michael; Jackson, Michael; Rosenfeld, Anatoly

2018-05-22

To investigate the accuracy of the dosimetry of radiation fields produced by small ELEKTA cone collimators used for stereotactic radiosurgery treatments (SRS) using commercially available detectors EBT3 Gafchromic TM film, IBA Stereotactic diode (SFD), and the recently developed detector DUO, which is a monolithic silicon orthogonal linear diode array detector. These three detectors were used for the measurement of beam profiles, output factors, and percentage depth dose for SRS cone collimators with cone sizes ranging from 5 to 50 mm diameter. The measurements were performed at 10 cm depth and 90 cm SSD. The SRS cone beam profiles measured with DUO, EBT3 film, and IBA SFD agreed well, results being in agreement within ±0.5 mm in the FWHM, and ±0.7 mm in the penumbra region. The output factor measured by DUO with 0.5 mm air gap above agrees within ±1% with EBT3. The OF measured by IBA SFD (corrected for the over-response) agreed with both EBT3 and DUO within ±2%. All three detectors agree within ±2% for PDD measurements for all SRS cones. The characteristics of the ELEKTA SRS cone collimator have been evaluated by using a monolithic silicon high spatial resolution detector DUO, EBT3, and IBA SFD diode. The DUO detector is suitable for fast real-time quality assurance dosimetry in small radiation fields typical for SRS/SRT. This has been demonstrated by its good agreement of measured doses with EBT 3 films. © 2018 The Authors. Journal of Applied Clinical Medical Physics published by Wiley Periodicals, Inc. on behalf of American Association of Physicists in Medicine.

IBIC characterisation of novel detectors for single atom doping of quantum computer devices

NASA Astrophysics Data System (ADS)

Yang, Changyi; Jamieson, David N.; Pakes, Chris I.; George, Damien P.; Hearne, Sean M.; Dzurak, Andrew S.; Gauja, Eric; Stanley, F.; Clark, R. G.

2003-09-01

Single ion implantation and online detection is highly desirable for the emerging application, in which single 31P ions need to be inserted in prefabricated silicon cells to construct solid-state quantum bits (qubits). In order to fabricate qubit arrays, we have developed novel detectors that employ detector electrodes adjacent to the prefabricated cells that can detect single keV ion strikes appropriate for the fabrication of shallow phosphorus arrays. The method utilises a high purity silicon substrate with very high resistivity, a thin SiO 2 surface layer, nanometer masks for the lateral positioning single phosphorus implantation, biased electrodes applied to the surface of the silicon and sensitive electronics that can detect the charge transient from single keV ion strikes. A TCAD (Technology Computer Aided Design) software package was applied in the optimisation of the device design and simulation of the detector performance. Here we show the characterisation of these detectors using ion beam induced charge (IBIC) with a focused 2 MeV He ions in a nuclear microprobe. The IBIC imaging method in a nuclear microprobe allowed us to measure the dead-layer thickness of the detector structure (required to be very thin for successful detection of keV ions), and the spatial distribution of the charge collection efficiency around the entire region of the detector. We show that our detectors have near 100% charge collection efficiency for MeV ions, extremely thin dead-layer thickness (about 7 nm) and a wide active region extending laterally from the electrodes (10-20 μm) where qubit arrays can be constructed. We demonstrate that the device can be successfully applied in the detection of keV ionisation energy from single events of keV X-rays and keV 31P ions.

The spatial resolution of silicon-based electron detectors in beta-autoradiography.

PubMed

Cabello, Jorge; Wells, Kevin

2010-03-21

Thin tissue autoradiography is an imaging modality where ex-vivo tissue sections are placed in direct contact with autoradiographic film. These tissue sections contain a radiolabelled ligand bound to a specific biomolecule under study. This radioligand emits beta - or beta+ particles ionizing silver halide crystals in the film. High spatial resolution autoradiograms are obtained using low energy radioisotopes, such as (3)H where an intrinsic 0.1-1 microm spatial resolution can be achieved. Several digital alternatives have been presented over the past few years to replace conventional film but their spatial resolution has yet to equal film, although silicon-based imaging technologies have demonstrated higher sensitivity compared to conventional film. It will be shown in this work how pixel size is a critical parameter for achieving high spatial resolution for low energy uncollimated beta imaging. In this work we also examine the confounding factors impeding silicon-based technologies with respect to spatial resolution. The study considers charge diffusion in silicon and detector noise, and this is applied to a range of radioisotopes typically used in autoradiography. Finally an optimal detector geometry to obtain the best possible spatial resolution for a specific technology and a specific radioisotope is suggested.

Investigation of the Effect of Temperature and Light Emission from Silicon Photomultiplier Detectors

NASA Astrophysics Data System (ADS)

Ruiz Castruita, Daniel; Ramos, Daniel; Hernandez, Victor; Niduaza, Rommel; Konx, Adrian; Fan, Sewan; Fatuzzo, Laura; Ritt, Stefan

2015-04-01

The silicon photomultiplier (SiPM) is an extremely sensitive light detector capable of measuring very dim light and operates as a photon-number resolving detector. Its high gain comes from operating at slightly above the breakdown voltage, which is also accompanied by a high dark count rate. At this conference poster session we describe our investigation of using SiPMs, the multipixel photon counters (MPPC) from Hamamatsu, as readout detectors for development in a cosmic ray scintillating detector array. Our research includes implementation of a novel design that automatically adjusts for the bias voltage to the MPPC detectors to compensate for changes in the ambient temperature. Furthermore, we describe our investigations for the MPPC detector characteristics at different bias voltages, temperatures and light emission properties. To measure the faint light emitted from the MPPC we use a photomultiplier tube capable of detecting single photons. Our data acquisition setup consists of a 5 Giga sample/second waveform digitizer, the DRS4, triggered to capture the MPPC detector waveforms. Analysis of the digitized waveforms, using the CERN package PAW, would be discussed and presented. US Department of Education Title V Grant PO31S090007.

LWIR HgCdTe Detectors Grown on Ge Substrates

NASA Astrophysics Data System (ADS)

Vilela, M. F.; Lofgreen, D. D.; Smith, E. P. G.; Newton, M. D.; Venzor, G. M.; Peterson, J. M.; Franklin, J. J.; Reddy, M.; Thai, Y.; Patten, E. A.; Johnson, S. M.; Tidrow, M. Z.

2008-09-01

Long-wavelength infrared (LWIR) HgCdTe p-on- n double-layer heterojunctions (DLHJs) for infrared detector applications have been grown on 100 mm Ge (112) substrates by molecular beam epitaxy (MBE). The objective of this current work was to grow our baseline p-on- n DLHJ detector structure (used earlier on Si substrates) on 100 mm Ge substrates in the 10 μm to 11 μm LWIR spectral region, evaluate the material properties, and obtain some preliminary detector performance data. Material characterization techniques included are X-ray rocking curves, etch pit density (EPD) measurements, compositional uniformity determined from Fourier-transform infrared (FTIR) transmission, and doping concentrations determined from secondary-ion mass spectroscopy (SIMS). Detector properties include resistance-area product (RoA), spectral response, and quantum efficiency. Results of LWIR HgCdTe detectors and test structure arrays (TSA) fabricated on both Ge and silicon (Si) substrates are presented and compared. Material properties demonstrated include X-ray full-width of half-maximum (FWHM) as low as 77 arcsec, typical etch pit densities in mid 106 cm-2 and wavelength cutoff maximum/minimum variation <2% across the full wafer. Detector characteristics were found to be nearly identical for HgCdTe grown on either Ge or Si substrates.

Baby MIND: A Magnetized Segmented Neutrino Detector for the WAGASCI Experiment

DOE Office of Scientific and Technical Information (OSTI.GOV)

Antonova, M.; et al.

T2K (Tokai-to-Kamioka) is a long-baseline neutrino experiment in Japan designed to study various parameters of neutrino oscillations. A near detector complex (ND280) is located 280 m downstream of the production target and measures neutrino beam parameters before any oscillations occur. ND280's measurements are used to predict the number and spectra of neutrinos in the Super-Kamiokande detector at the distance of 295 km. The difference in the target material between the far (water) and near (scintillator, hydrocarbon) detectors leads to the main non-cancelling systematic uncertainty for the oscillation analysis. In order to reduce this uncertainty a new WAter-Grid-And-SCintillator detector (WAGASCI) hasmore » been developed. A magnetized iron neutrino detector (Baby MIND) will be used to measure momentum and charge identification of the outgoing muons from charged current interactions. The Baby MIND modules are composed of magnetized iron plates and long plastic scintillator bars read out at the both ends with wavelength shifting fibers and silicon photomultipliers. The front-end electronics board has been developed to perform the readout and digitization of the signals from the scintillator bars. Detector elements were tested with cosmic rays and in the PS beam at CERN. The obtained results are presented in this paper.« less

Baby MIND: a magnetized segmented neutrino detector for the WAGASCI experiment

NASA Astrophysics Data System (ADS)

Antonova, M.; Asfandiyarov, R.; Bayes, R.; Benoit, P.; Blondel, A.; Bogomilov, M.; Bross, A.; Cadoux, F.; Cervera, A.; Chikuma, N.; Dudarev, A.; Ekelöf, T.; Favre, Y.; Fedotov, S.; Hallsjö, S.-P.; Izmaylov, A.; Karadzhov, Y.; Khabibullin, M.; Khotyantsev, A.; Kleymenova, A.; Koga, T.; Kostin, A.; Kudenko, Y.; Likhacheva, V.; Martinez, B.; Matev, R.; Medvedeva, M.; Mefodiev, A.; Minamino, A.; Mineev, O.; Nessi, M.; Nicola, L.; Noah, E.; Ovsiannikova, T.; Pais Da Silva, H.; Parsa, S.; Rayner, M.; Rolando, G.; Shaykhiev, A.; Simion, P.; Soler, F. J. P.; Suvorov, S.; Tsenov, R.; Ten Kate, H.; Vankova-Kirilova, G.; Yershov, N.

2017-07-01

T2K (Tokai-to-Kamioka) is a long-baseline neutrino experiment in Japan designed to study various parameters of neutrino oscillations. A near detector complex (ND280) is located 280 m downstream of the production target and measures neutrino beam parameters before any oscillations occur. ND280's measurements are used to predict the number and spectra of neutrinos in the Super-Kamiokande detector at the distance of 295 km. The difference in the target material between the far (water) and near (scintillator, hydrocarbon) detectors leads to the main non-cancelling systematic uncertainty for the oscillation analysis. In order to reduce this uncertainty a new WAter-Grid-And-SCintillator detector (WAGASCI) has been developed. A magnetized iron neutrino detector (Baby MIND) will be used to measure momentum and charge identification of the outgoing muons from charged current interactions. The Baby MIND modules are composed of magnetized iron plates and long plastic scintillator bars read out at the both ends with wavelength shifting fibers and silicon photomultipliers. The front-end electronics board has been developed to perform the readout and digitization of the signals from the scintillator bars. Detector elements were tested with cosmic rays and in the PS beam at CERN. The obtained results are presented in this paper.

The Hard X-ray Imager (HXI) for the ASTRO-H mission

NASA Astrophysics Data System (ADS)

Kokubun, Motohide; Nakazawa, Kazuhiro; Enoto, Teruaki; Fukazawa, Yasushi; Kataoka, Jun; Kawaharada, Madoka; Laurent, Philippe; Lebrun, François; Limousin, Olivier; Makishima, Kazuo; Mizuno, Tsunefumi; Mori, Kunishiro; Nakamori, Takeshi; Odaka, Hirokazu; Ohno, Masanori; Ohta, Masayuki; Sato, Goro; Sato, Rie; Tajima, Hiroyasu; Takahashi, Hiromitsu; Takahashi, Tadayuki; Tanaka, Takaaki; Terada, Yukikatsu; Uchiyama, Hideki; Uchiyama, Yasunobu; Watanabe, Shin; Yatsu, Yoichi; Yuasa, Takayuki

2012-09-01

The Hard X-ray Imager (HXI) is one of the four detectors on board the ASTRO-H mission (6th Japanese X-ray satellite), which is scheduled to be launched in 2014. Using the hybrid structure composed of double-sided silicon strip detectors and a cadmium telluride double-sided strip detector, both with a high spatial resolution of 250 μm. Combined with the hard X-ray telescope (HXT), it consists a hard X-ray imaging spectroscopic instrument covering the energy range from 5 to 80 keV with an effective area of <300 cm2 in total at 30 keV. An energy resolution of 1-2 keV (FWHM) and lower threshold of 5 keV are both achieved with using a low noise front-end ASICs. In addition, the thick BGO active shields surrounding the main detector package is a heritage of the successful performance of the Hard X-ray Detector on board the Suzaku satellite. This feature enables the instrument to achieve an extremely good reduction of background caused by cosmic-ray particles, cosmic X-ray background, and in-orbit radiation activation. In this paper, we present the detector concept, design, latest results of the detector development, and the current status of the hardware.

Electrical properties study under radiation of the 3D-open-shell-electrode detector

NASA Astrophysics Data System (ADS)

Liu, Manwen; Li, Zheng

2018-05-01

Since the 3D-Open-Shell-Electrode Detector (3DOSED) is proposed and the structure is optimized, it is important to study 3DOSED's electrical properties to determine the detector's working performance, especially in the heavy radiation environments, like the Large Hadron Collider (LHC) and it's upgrade, the High Luminosity (HL-LHC) at CERN. In this work, full 3D technology computer-aided design (TCAD) simulations have been done on this novel silicon detector structure. Simulated detector properties include the electric field distribution, the electric potential distribution, current-voltage (I-V) characteristics, capacitance-voltage (C-V) characteristics, charge collection property, and full depletion voltage. Through the analysis of calculations and simulation results, we find that the 3DOSED's electric field and potential distributions are very uniform, even in the tiny region near the shell openings with little perturbations. The novel detector fits the designing purpose of collecting charges generated by particle/light in a good fashion with a well defined funnel shape of electric potential distribution that makes these charges drifting towards the center collection electrode. Furthermore, by analyzing the I-V, C-V, charge collection property and full depletion voltage, we can expect that the novel detector will perform well, even in the heavy radiation environments.

Optimizing Floating Guard Ring Designs for FASPAX N-in-P Silicon Sensors

DOE Office of Scientific and Technical Information (OSTI.GOV)

Shin, Kyung-Wook; Bradford, Robert; Lipton, Ronald

2016-10-06

FASPAX (Fermi-Argonne Semiconducting Pixel Array X-ray detector) is being developed as a fast integrating area detector with wide dynamic range for time resolved applications at the upgraded Advanced Photon Source (APS.) A burst mode detector with intendedmore » $$\\mbox{13 $$MHz$}$ image rate, FASPAX will also incorporate a novel integration circuit to achieve wide dynamic range, from single photon sensitivity to $$10^{\\text{5}}$$ x-rays/pixel/pulse. To achieve these ambitious goals, a novel silicon sensor design is required. This paper will detail early design of the FASPAX sensor. Results from TCAD optimization studies, and characterization of prototype sensors will be presented.« less

Recent Results on Gridpix Detectors:. AN Integrated Micromegas Grid and a Micromegas Ageing Test

NASA Astrophysics Data System (ADS)

Chefdeville, M.; Aarts, A.; van der Graaf, H.; van der Putten, S.

2006-04-01

A new gas-filled detector combining a Micromegas with a CMOS pixel chip has been recently tested. A procedure to integrate the Micromegas grid onto silicon wafers (‘wafer post processing’) has been developed. We aim to eventually integrate the grid on top of wafers of CMOS pixel chips. The first part of this contribution describes an application in vertex detection (GOSSIP). Then tests of the first detector prototype of a grid integrated on a bare silicon wafer are shown. Finally an ageing test of a Micromegas chamber is presented. After verifying the chambers' proportionality at a very high dose rates, the device was irradiated until ageing became apparent.

Application of the Langley plot for calibration of sun sensors for the Halogen Occultation Experiment (HALOE)

NASA Technical Reports Server (NTRS)

Moore, Alvah S., Jr.; Mauldin, L. ED, III; Stump, Charles W.; Reagan, John A.; Fabert, Milton G.

1989-01-01

The calibration of the Halogen Occultation Experiment (HALOE) sun sensor is described. This system consists of two energy-balancing silicon detectors which provide coarse azimuth and elevation control signals and a silicon photodiode array which provides top and bottom solar edge data for fine elevation control. All three detectors were calibrated on a mountaintop near Tucson, Ariz., using the Langley plot technique. The conventional Langley plot technique was modified to allow calibration of the two coarse detectors, which operate wideband. A brief description of the test setup is given. The HALOE instrument is a gas correlation radiometer that is now being developed for the Upper Atmospheric Research Satellite.

Characterization of the VEGA ASIC coupled to large area position-sensitive Silicon Drift Detectors

NASA Astrophysics Data System (ADS)

Campana, R.; Evangelista, Y.; Fuschino, F.; Ahangarianabhari, M.; Macera, D.; Bertuccio, G.; Grassi, M.; Labanti, C.; Marisaldi, M.; Malcovati, P.; Rachevski, A.; Zampa, G.; Zampa, N.; Andreani, L.; Baldazzi, G.; Del Monte, E.; Favre, Y.; Feroci, M.; Muleri, F.; Rashevskaya, I.; Vacchi, A.; Ficorella, F.; Giacomini, G.; Picciotto, A.; Zuffa, M.

2014-08-01

Low-noise, position-sensitive Silicon Drift Detectors (SDDs) are particularly useful for experiments in which a good energy resolution combined with a large sensitive area is required, as in the case of X-ray astronomy space missions and medical applications. This paper presents the experimental characterization of VEGA, a custom Application Specific Integrated Circuit (ASIC) used as the front-end electronics for XDXL-2, a large-area (30.5 cm2) SDD prototype. The ASICs were integrated on a specifically developed PCB hosting also the detector. Results on the ASIC noise performances, both stand-alone and bonded to the large area SDD, are presented and discussed.

Infrared response measurements on radiation-damaged Si/Li/ detectors.

NASA Technical Reports Server (NTRS)

Sher, A. H.; Liu, Y. M.; Keery, W. J.

1972-01-01

The improved infrared response (IRR) technique has been used to qualitatively compare radiation effects on Si(Li) detectors with energy levels reported for silicon in the literature. Measurements have been made on five commercial silicon detectors and one fabricated in-house, both before and after irradiation with fast neutrons, 1.9-MeV protons, and 1.6-MeV electrons. Effects dependent upon the extent of radiation damage have been observed. It seems likely that the photo-EMF, or photo-voltage, effect is the basic mechanism for the observation of IRR in p-i-n diodes with a wide i-region. Experimental characteristics of the IRR measurement are in agreement with those of the photovoltage effect.

A passive terahertz video camera based on lumped element kinetic inductance detectors

DOE Office of Scientific and Technical Information (OSTI.GOV)

Rowe, Sam, E-mail: sam.rowe@astro.cf.ac.uk; Pascale, Enzo; Doyle, Simon

We have developed a passive 350 GHz (850 μm) video-camera to demonstrate lumped element kinetic inductance detectors (LEKIDs)—designed originally for far-infrared astronomy—as an option for general purpose terrestrial terahertz imaging applications. The camera currently operates at a quasi-video frame rate of 2 Hz with a noise equivalent temperature difference per frame of ∼0.1 K, which is close to the background limit. The 152 element superconducting LEKID array is fabricated from a simple 40 nm aluminum film on a silicon dielectric substrate and is read out through a single microwave feedline with a cryogenic low noise amplifier and room temperature frequencymore » domain multiplexing electronics.« less

Separation and Detection of Toxic Gases with a Silicon Micromachined Gas Chromatography System

NASA Technical Reports Server (NTRS)

Kolesar, Edward S.; Reston, Rocky R.

1995-01-01

A miniature gas chromatography (GC) system was designed and fabricated using silicon micromachining and integrated circuit (IC) processing techniques. The silicon micromachined gas chromatography system (SMGCS) is composed of a miniature sample injector that incorporates a 10 microliter sample loop; a 0.9 meter long, rectangular shaped (300 micrometer width and 10 micrometer height) capillary column coated with a 0.2 micrometer thick copper phthalocyanine (CuPc) stationary phase; and a dual detector scheme based upon a CuPc-coated chemiresistor and a commercially available 125 micrometer diameter thermal conductivity detector (TCD) bead. Silicon micromachining was employed to fabricate the interface between the sample injector and the GC column, the column itself, and the dual detector cavity. A novel IC thin-film processing technique was developed to sublime the CuPc stationary phase coating on the column walls that were micromachined in the host silicon wafer substrate and Pyrex (r) cover plate, which were then electrostatically bonded together. The SMGCS can separate binary gas mixtures composed of parts-per-million (ppm) concentrations of ammonia (NH3) and nitrogen dioxide (NO2) when isothermally operated (55-80 degrees C). With a helium carrier gas and nitrogen diluent, a 10 microliter sample volume containing ammonia and nitrogen dioxide injected at 40 psi ((2.8 x 10(exp 5)Pa)) can be separated in less than 30 minutes.

Low-Loss, Low-Noise, Crystalline and Amorphous Silicon Dielectrics for Superconducting Microstriplines and Kinetic Inductance Detector Capacitors

NASA Astrophysics Data System (ADS)

Golwala, Sunil

Prospective future PCOS (Inflation Probe) and COR (Origins Space Telescope, FIR Interferometer) missions require large arrays of highly sensitive millimeter-wave and submillimeter (mm/submm) detectors, including spectroscopic detectors. A number of technology developments in superconducting sensors for these applications require lowloss dielectric thin films. Examples include: Microstrip-coupled superconducting mm/submm detectors, which rely on superconductor-dielectric-superconductor microstrip transmission line to transmit optical power from a coherent reception element (feed horn, lens coupled antenna, phased-array antenna) to detectors; Superconducting spectrometers (SuperSpec, TIME, MicroSpec), which use such microstrip to route optical power to detectors and to define spectral channels; Kinetic inductance detectors (KIDs), which use capacitors. In the above, the dielectric loss, quantified by the loss tangent (tan delta), is critical: it determines the optical loss in the microstrip, the resolution of spectral channels, and the two-level-system (TLS) dielectric fluctuation noise of the KID capacitor. Currently, the amorphous dielectrics SiO2 and SiNx are used because they are most convenient for fabrication. They have tan delta 1e-3. This loss tangent is acceptable for microstripline but severely limits the possible architectures and spectral resolving power, and it is too large for KID capacitors. Lower loss dielectric would result in a quantum leap in capability, opening up design space heretofore inaccessible and enabling design innovations. Specific impacts on the above technologies would be: For phased-array antennas, lower optical loss would allow the detectors to be moved away from the antenna, allowing them to be shielded from absorption of light that has not been spatially or spectrally filtered and also obviating long wiring busses. More sophisticated antenna designs, such as multiscale antennas covering a decade of spectral bandwidth, could be entertained; For superconducting spectrometers, lower loss would improve the spectral resolution limit, Rmax = (1/tan delta), from 1e3 to 2e5, sufficient for resolved extragalactic mm/submm spectroscopy, where intrinsic line widths are dnu/nu 1e-4 to 1e-3; For KIDs, the interdigitated capacitors (IDC) currently used could be replaced by parallel-plate capacitors 40 times smaller in area, presenting a number of advantages over IDCs in properties such as focal plane fill factor and mounting architecture, direct absorption, and inter-KID coupling. There exist two paths in the literature to lower loss: hydrogenated amorphous silicon (aSi:H) and crystalline silicon (cSi). Crystalline silicon intrinsically has tan delta < 5e-6, 200 times lower than SiO2 and SiNx. a-Si:H has been demonstrated with tan delta < 5e5, not as good as cSi but still 20 times better than SiO2 and SiNx. We will pursue the development of both options due their complementary advantages and challenges. While a process has already been demonstrated for 5 um cSi with delta < 1e-4 and consistent with other design/fabrication constraints, it has not been shown yet that this can be extended to more convenient 1 um and 2 um thicknesses. a-Si:H has been demonstrated to have tan delta < 1e-4, but the fabrication recipe is almost certainly machine-specific and may not be compatible with focal plane array fabrication due to adhesion or stress issues. Given the uncertainties and different constraints imposed by the two processes, it is sensible to pursue both. This development would contribute to filling the Critical Technology Gaps identified in the 2016 PCOS and COR Program Annual Technology Reports, specifically the PCOS “Advanced millimeter-wave focal plane arrays for CMB polarimetry” gap and the COR “Large-format, low-noise far-infrared and ultralow noise (FIR) direct detectors” and “Compact, Integrated Spectrometers for 100 to 1000 um” gaps.

Measurement of radon progenies using the Timepix detector.

PubMed

Bulanek, Boris; Jilek, Karel; Cermak, Pavel

2014-07-01

After an introduction of Timepix detector, results of these detectors with silicon and cadmium telluride detection layer in assessment of activity of short-lived radon decay products are presented. They were collected on an open-face filter by means of one-grab sampling method from the NRPI radon chamber. Activity of short-lived radon decay products was estimated from measured alpha decays of 218,214Po. The results indicate very good agreement between the use of both Timepix detectors and an NRPI reference instrument, continuous monitor Fritra 4. Low-level detection limit for EEC was estimated to be 41 Bq m(-3) for silicon detection layer and 184 Bq m(-3) for CdTe detection layer, respectively. © The Author 2014. Published by Oxford University Press. All rights reserved. For Permissions, please email: journals.permissions@oup.com.

Study of run time errors of the ATLAS pixel detector in the 2012 data taking period

NASA Astrophysics Data System (ADS)

Gandrajula, Reddy Pratap

The high resolution silicon Pixel detector is critical in event vertex reconstruction and in particle track reconstruction in the ATLAS detector. During the pixel data taking operation, some modules (Silicon Pixel sensor +Front End Chip+ Module Control Chip (MCC)) go to an auto-disable state, where the Modules don't send the data for storage. Modules become operational again after reconfiguration. The source of the problem is not fully understood. One possible source of the problem is traced to the occurrence of single event upset (SEU) in the MCC. Such a module goes to either a Timeout or Busy state. This report is the study of different types and rates of errors occurring in the Pixel data taking operation. Also, the study includes the error rate dependency on Pixel detector geometry.

Enhancement of phonon backscattering due to confinement of ballistic phonon pathways in silicon as studied with a microfabricated phonon spectrometer

DOE Office of Scientific and Technical Information (OSTI.GOV)

Otelaja, O. O.; Robinson, R. D., E-mail: rdr82@cornell.edu

2015-10-26

In this work, the mechanism for enhanced phonon backscattering in silicon is investigated. An understanding of phonon propagation through substrates has implications for engineering heat flow at the nanoscale, for understanding sources of decoherence in quantum systems, and for realizing efficient phonon-mediated particle detectors. In these systems, phonons that backscatter from the bottom of substrates, within the crystal or from interfaces, often contribute to the overall detector signal. We utilize a microscale phonon spectrometer, comprising superconducting tunnel junction emitters and detectors, to specifically probe phonon backscattering in silicon substrates (∼500 μm thick). By etching phonon “enhancers” or deep trenches (∼90 μm) aroundmore » the detectors, we show that the backscattered signal level increases by a factor of ∼2 for two enhancers versus one enhancer. Using a geometric analysis of the phonon pathways, we show that the mechanism of the backscattered phonon enhancement is due to confinement of the ballistic phonon pathways and increased scattering off the enhancer walls. Our result is applicable to the geometric design and patterning of substrates that are employed in phonon-mediated detection devices.« less

Collected charge of planar silicon detectors after pion and proton irradiations up to 2.2 ×10 16 n eq cm -2

NASA Astrophysics Data System (ADS)

Affolder, Anthony; Allport, Phil; Casse, Gianluigi

2010-11-01

The planned luminosity upgrade of the Large Hadron Collider at CERN (Super-LHC) will provide a challenging environment for the tracking and vertexing detector systems. Planar, segmented silicon detectors are one of the few radiation tolerant technologies under consideration for use for the Super-LHC tracking detectors in either pixel or strip geometries. In this paper, charge collection measurements are made with planar silicon sensors with 2 different substrate materials (float zone and magnetic Czochralski) and 3 different diode configurations (p+ strip in n-bulk, n+ strip in n-bulk, and n+ strip in p-bulk). For the first time, a comparison of the charge collection of these devices will be made after irradiation up to 6 ×1014 neq cm-2 with 280 MeV charged pions, and up to 2.2 ×1016 neq cm-2 with 26 MeV protons. This study covers the expected range of final fluences for the different layers of pixel and microstrip sensors of the ATLAS and CMS experiments at the Super-LHC. These measurements have been carried out using analogue, high-speed (40 MHz) electronics and a Strontium-90 beta source.

Silicon nanowire photodetectors made by metal-assisted chemical etching

NASA Astrophysics Data System (ADS)

Xu, Ying; Ni, Chuan; Sarangan, Andrew

2016-09-01

Silicon nanowires have unique optical effects, and have potential applications in photodetectors. They can exhibit simple optical effects such as anti-reflection, but can also produce quantum confined effects. In this work, we have fabricated silicon photodetectors, and then post-processed them by etching nanowires on the incident surface. These nanowires were produced by a wet-chemical etching process known as the metal-assisted-chemical etching, abbreviated as MACE. N-type silicon substrates were doped by thermal diffusion from a solid ceramic source, followed by etching, patterning and contact metallization. The detectors were first tested for functionality and optical performance. The nanowires were then made by depositing an ultra-thin film of gold below its percolation thickness to produce an interconnected porous film. This was then used as a template to etch high aspect ratio nanowires into the face of the detectors with a HF:H2O2 mixture.

Simulation of 1.5-mm-thick and 15-cm-diameter gated silicon drift X-ray detector operated with a single high-voltage source

NASA Astrophysics Data System (ADS)

Matsuura, Hideharu

2015-04-01

High-resolution silicon X-ray detectors with a large active area are required for effectively detecting traces of hazardous elements in food and soil through the measurement of the energies and counts of X-ray fluorescence photons radially emitted from these elements. The thicknesses and areas of commercial silicon drift detectors (SDDs) are up to 0.5 mm and 1.5 cm2, respectively. We describe 1.5-mm-thick gated SDDs (GSDDs) that can detect photons with energies up to 50 keV. We simulated the electric potential distributions in GSDDs with a Si thickness of 1.5 mm and areas from 0.18 to 168 cm2 at a single high reverse bias. The area of a GSDD could be enlarged simply by increasing all the gate widths by the same multiple, and the capacitance of the GSDD remained small and its X-ray count rate remained high.

The PAMELA experiment on satellite and its capability in cosmic rays measurements

NASA Astrophysics Data System (ADS)

Adriani, O.; Ambriola, M.; Barbarino, G.; Barbier, L. M.; Bartalucci, S.; Bazilevskaja, G.; Bellotti, R.; Bertazzoni, S.; Bidoli, V.; Boezio, M.; Bogomolov, E.; Bonechi, L.; Bonvicini, V.; Boscherini, M.; Bravar, U.; Cafagna, F.; Campana, D.; Carlson, P.; Casolino, M.; Castellano, M.; Castellini, G.; Christian, E. R.; Ciacio, F.; Circella, M.; D'Alessandro, R.; De Marzo, C. N.; De Pascale, M. P.; Finetti, N.; Furano, G.; Gabbanini, A.; Galper, A. M.; Giglietto, N.; Grandi, M.; Grigorjeva, A.; Guarino, F.; Hof, M.; Koldashov, S. V.; Korotkov, M. G.; Krizmanic, J. F.; Krutkov, S.; Lund, J.; Marangelli, B.; Marino, L.; Menn, W.; Mikhailov, V. V.; Mirizzi, N.; Mitchell, J. W.; Mocchiutti, E.; Moiseev, A. A.; Morselli, A.; Mukhametshin, R.; Ormes, J. F.; Osteria, G.; Ozerov, J. V.; Papini, P.; Pearce, M.; Perego, A.; Piccardi, S.; Picozza, P.; Ricci, M.; Salsano, A.; Schiavon, P.; Scian, G.; Simon, M.; Sparvoli, R.; Spataro, B.; Spillantini, P.; Spinelli, P.; Stephens, S. A.; Stochaj, S. J.; Stozhkov, Y.; Straulino, S.; Streitmatter, R. E.; Taccetti, F.; Tesi, M.; Vacchi, A.; Vannuccini, E.; Vasiljev, G.; Vignoli, V.; Voronov, S. A.; Yurkin, Y.; Zampa, G.; Zampa, N.

2002-02-01

The PAMELA& equipment will be assembled in 2001 and installed on board the Russian satellite Resurs. PAMELA is conceived mainly to study the antiproton and positron fluxes in cosmic rays up to high energy (190GeV for p¯ and 270GeV for e+) and to search antinuclei, up to 30GeV/n, with a sensitivity of 10-7 in the He/He ratio. The PAMELA telescope consists of: a magnetic spectrometer made up of a permanent magnet system equipped with double sided microstrip silicon detectors; a transition radiation detector made up of active layers of proportional straw tubes interleaved with carbon fibre radiators; and a silicon-tungsten imaging calorimeter made up of layers of tungsten absorbers and silicon detector planes. A time-of-flight system and anti-coincidence counters complete the PAMELA equipment. In the past years, tests have been done on each subdetector of PAMELA; the main results are presented and their implications on the anti-particles identification capability in cosmic rays are discussed here.

Mid-infrared materials and devices on a Si platform for optical sensing

PubMed Central

Singh, Vivek; Lin, Pao Tai; Patel, Neil; Lin, Hongtao; Li, Lan; Zou, Yi; Deng, Fei; Ni, Chaoying; Hu, Juejun; Giammarco, James; Soliani, Anna Paola; Zdyrko, Bogdan; Luzinov, Igor; Novak, Spencer; Novak, Jackie; Wachtel, Peter; Danto, Sylvain; Musgraves, J David; Richardson, Kathleen; Kimerling, Lionel C; Agarwal, Anuradha M

2014-01-01

In this article, we review our recent work on mid-infrared (mid-IR) photonic materials and devices fabricated on silicon for on-chip sensing applications. Pedestal waveguides based on silicon are demonstrated as broadband mid-IR sensors. Our low-loss mid-IR directional couplers demonstrated in SiNx waveguides are useful in differential sensing applications. Photonic crystal cavities and microdisk resonators based on chalcogenide glasses for high sensitivity are also demonstrated as effective mid-IR sensors. Polymer-based functionalization layers, to enhance the sensitivity and selectivity of our sensor devices, are also presented. We discuss the design of mid-IR chalcogenide waveguides integrated with polycrystalline PbTe detectors on a monolithic silicon platform for optical sensing, wherein the use of a low-index spacer layer enables the evanescent coupling of mid-IR light from the waveguides to the detector. Finally, we show the successful fabrication processing of our first prototype mid-IR waveguide-integrated detectors. PMID:27877641

Characterisation results of the CMOS VISNIR spectral band detector for the METimage instrument

NASA Astrophysics Data System (ADS)

Pratlong, Jérôme; Schmuelling, Frank; Benitez, Victor; Breart De Boisanger, Michel; Skegg, Michael; Simpson, Robert; Bowring, Steve; Krzizok, Natalie

2017-09-01

The METimage instrument is part of the EPS-SG (EUMETSAT Polar System Second Generation) program. It will be situated on the MetOp-SG platform which in operation has an objective of collecting data for meteorology and climate monitoring as well as their forecasting. Teledyne e2v has developed and characterised the CMOS VISNIR detector flight module part of the METimage instrument. This paper will focus on the silicon results obtained from the CMOS VISNIR detector flight model. The detector is a large multi-linear device composed of 7 spectral bands covering a wavelength range from 428 nm to 923 nm (some bands are placed twice and added together to enhance the signal-to-noise performance). This detector uses a 4T pixel, with a size of 250μm square, presenting challenges to achieve good charge transfer efficiency with high conversion factor and good linearity for signal levels up to 2M electrons and with high line rates. Low noise has been achieved using correlated double sampling to suppress the read-out noise and give a maximum dynamic range that is significantly larger than in standard commercial devices. The photodiode occupies a significant fraction of the large pixel area. This makes it possible to meet the detection efficiency when front illuminated. A thicker than standard epitaxial silicon is used to improve NIR response. However, the dielectric stack on top of the sensor produces Fabry-Perot étalon effects, which are problematic for narrow band illumination as this causes the detection efficiency to vary significantly over a small wavelength range. In order to reduce this effect and to meet the specification, the silicon manufacturing process has been modified. The flight model will have black coating deposited between each spectral channel, onto the active silicon regions.

Coatings and surface treatments for enhanced performance suspensions for future gravitational wave detectors

NASA Astrophysics Data System (ADS)

Birney, R.; Cumming, A. V.; Campsie, P.; Gibson, D.; Hammond, G. D.; Hough, J.; Martin, I. W.; Reid, S.; Rowan, S.; Song, S.; Talbot, C.; Vine, D.; Wallace, G.

2017-12-01

Further improvements in the low frequency sensitivity of gravitational wave detectors are important for increasing the observable population of astrophysical sources, such as intermediate mass compact black hole binary systems. Improvements in the lower stage mirror and suspension systems will set challenging targets for the required thermal noise performance of the cantilever blade springs, which provide vertical softness and, thus, isolation to the mirror suspension stack. This is required due to the coupling between the vertical and horizontal axes due to the curvature of the Earth. This can be achieved through use of high mechanical Q materials, which are compatible with cryogenic cooling, such as crystalline silicon. However, such materials are brittle, posing further challenges for assembly/jointing and, more generally, for long-term robustness. Here, we report on experimental studies of the breaking strength of silicon at room temperature, via both tensile and 4-point flexural testing; and on the effects of various surface treatments and coatings on durability and strength. Single- and multi-layer DLC (diamond-like carbon) coatings, together with magnetron-sputtered silica and thermally-grown silica, are investigated, as are the effects of substrate preparation and argon plasma pre-treatment. Application of single- or multi-layer DLC coatings can significantly improve the failure stress of silicon flexures, in addition to improved robustness for handling (assessed through abrasion tests). Improvements of up to 80% in tensile strength, a twofold increase in flexural strength, in addition to a 6.4 times reduction in the vertical thermal noise contribution of the suspension stack at 10 Hz are reported (compared to current Advanced LIGO design). The use of silicon blade springs would also significantly reduce potential ‘crackling noise’ associated with the underlying discrete events associated with plastic deformation in loaded flexures.

Novel Photon-Counting Detectors for Free-Space Communication

NASA Technical Reports Server (NTRS)

Krainak, Michael A.; Yang, Guan; Sun, Xiaoli; Lu, Wei; Merritt, Scott; Beck, Jeff

2016-01-01

We present performance data for novel photon counting detectors for free space optical communication. NASA GSFC is testing the performance of three novel photon counting detectors 1) a 2x8 mercury cadmium telluride avalanche array made by DRS Inc. 2) a commercial 2880 silicon avalanche photodiode array and 3) a prototype resonant cavity silicon avalanche photodiode array. We will present and compare dark count, photon detection efficiency, wavelength response and communication performance data for these detectors. We discuss system wavelength trades and architectures for optimizing overall communication link sensitivity, data rate and cost performance. The HgCdTe APD array has photon detection efficiencies of greater than 50 were routinely demonstrated across 5 arrays, with one array reaching a maximum PDE of 70. High resolution pixel-surface spot scans were performed and the junction diameters of the diodes were measured. The junction diameter was decreased from 31 m to 25 m resulting in a 2x increase in e-APD gain from 470 on the 2010 array to 1100 on the array delivered to NASA GSFC. Mean single photon SNRs of over 12 were demonstrated at excess noise factors of 1.2-1.3.The commercial silicon APD array has a fast output with rise times of 300ps and pulse widths of 600ps. Received and filtered signals from the entire array are multiplexed onto this single fast output. The prototype resonant cavity silicon APD array is being developed for use at 1 micron wavelength.

An evaluation of an ICCD imager of dynamic range expansion technique and application of insitu procedures for life-time extension

NASA Technical Reports Server (NTRS)

Currie, D. G.

1982-01-01

Research toward practical implementation of the Intensified Charge Coupled Device (ICCD) as a photon-counting array detector for astronomy is reported. The first area of concentration was to determine the rate and extent of the lifetime limiting damage to the CCD caused by the impact of high energy electrons, and to find whether various methods of annealing the damage were productive. The second effort was to determine the performance of the ICCD in a photon-counting mode to produce extended dynamic range measurements. There are two main effects that appear as the practical results of the electron damage to the CCD. One is an increase in the leakage current, i.e., the normal thermal generation of charge carriers in the silicon that provides a background dark signal that adds to the light produced image. In an undamaged CCD, the leakage current is usually fairly uniform across the photosensitive area of the silicon chip, with the exception of various bright pixels which have an anomalous leakage current well above the overall level.

Design and development of a ferroelectric micro photo detector for the bionic eye

NASA Astrophysics Data System (ADS)

Song, Yang

Driven by no effective therapy for Retinitis Pigmentosa and Age Related Macular Degeneration, artificial vision through the development of an artificial retina that can be implanted into the human eye, is being addressed by the Bionic Eye. This dissertation focuses on the study of a photoferroelectric micro photo detector as an implantable retinal prosthesis for vision restoration in patients with above disorders. This implant uses an electrical signal to trigger the appropriate ocular cells of the vision system without resorting to wiring or electrode implantation. The research work includes fabrication of photoferroelectric thin film micro detectors, characterization of these photoferroelectric micro devices as photovoltaic cells, and Finite Element Method (FEM) modeling of the photoferroelectrics and their device-neuron interface. A ferroelectric micro detector exhibiting the photovoltaic effect (PVE) directly adds electrical potential to the neuron membrane outer wall at the focal adhesion regions. The electrical potential then generates a retinal cell membrane potential deflection through a newly developed Direct-Electric-Field-Coupling (DEFC) model. This model is quite different from the traditional electric current model because instead of current directly working on the cell membrane, the PVE current is used to generate a localized high electric potential in the focal adhesion region by working together with the anisotropic high internal impedance of ferroelectric thin films. General electrodes and silicon photodetectors do not have such anisotropy and high impedance, and thus they cannot generate DEFC. This mechanism investigation is very valuable, because it clearly shows that our artificial retina works in a way that is totally different from the traditional current stimulation methods.

Scintillating fibres coupled to silicon photomultiplier prototypes for fast beam monitoring and thin timing detectors

NASA Astrophysics Data System (ADS)

Papa, A.; Kettle, P.-R.; Ripiccini, E.; Rutar, G.

2016-07-01

Several scintillating fibre prototypes (single- and double-layers) made of 250 μm multi-clad square fibres coupled to silicon photomultiplier have been studied using electrons, positrons and muons at different energies. Current measurements show promising results: already for a single fibre layer and minimum ionizing particles we obtain a detection efficiency ≥ 95 % (mean collected light/fibre ≈ 8 phe), a timing resolution of 550 ps/fibre and a foreseen spatial resolution < 100 μm, based on the achieved negligible optical cross-talk between fibres (< 1 %). We will also discuss the performances of a double-layer staggered prototype configuration, for which a full detection efficiency (≥ 99 %) has been measured together with a timing resolution of ≈ 400 ps for double hit events.

High-performance linear arrays of YBa2Cu3O7 superconducting infrared microbolometers on silicon

NASA Astrophysics Data System (ADS)

Johnson, Burgess R.; Foote, Marc C.; Marsh, Holly A.

1995-06-01

Single detectors and linear arrays of microbolometers utilizing the superconducting transition edge of YBa(subscript 2)Cu(subscript 3)O(subscript 7) have been fabricated by micromachining on silicon wafers. A D* of 8 +/- 2 X 10(superscript 9) cm Hz(superscript 1/2)/watt has been measured on a single detector. This is the highest D* reported on any superconducting microbolometer operating at temperatures higher than about 70 K. The NEP of this device was 1.5 X 10(superscript -12) watts/Hz(superscript HLF) at 2 Hz, at a temperature of 80.7 K. The thermal time constant was 105 msec, and the detector area was 140 micrometers X 105 micrometers . The use of batch silicon processing makes fabrication of linear arrays of these detectors relatively straightforward. The measured responsivity of detectors in one such array varied by less than 20% over the 6 mm length of the 64-element linear array. This measurement shows that good uniformity can be achieved at a single operating temperature in a superconductor microbolometer array, even when the superconducting resistive transition is a sharp function of temperature. The thermal detection mechanism of these devices gives them broadband response. This makes them especially useful at long wavelengths (e.g. (lambda) > 20 micrometers ), where they provide very high sensitivity at relatively high operating temperatures.

Novel x-ray silicon detector for 2D imaging and high-resolution spectroscopy

NASA Astrophysics Data System (ADS)

Castoldi, Andrea; Gatti, Emilio; Guazzoni, Chiara; Longoni, Antonio; Rehak, Pavel; Strueder, Lothar

1999-10-01

A novel x-ray silicon detector for 2D imaging has been recently proposed. The detector, called Controlled-Drift Detector, is operated in integrate-readout mode. Its basic feature is the fast transport of the integrated charge to the output electrode by means of a uniform drift field. The drift time of the charge packet identifies the pixel of incidence. A new architecture to implement the Controlled- Drift Detector concept will be presented. The potential wells for the integration of the signal charge are obtained by means of a suitable pattern of deep n-implants and deep p-implants. During the readout mode the signal electrons are transferred in the drift channel that flanks each column of potential wells where they drift towards the collecting electrode at constant velocity. The first experimental measurements demonstrate the successful integration, transfer and drift of the signal electrons. The low output capacitance of the readout electrode together with the on- chip front-end electronics allows high resolution spectroscopy of the detected photons.

Photon counting detector for the personal radiography inspection system "SIBSCAN"

NASA Astrophysics Data System (ADS)

Babichev, E. A.; Baru, S. E.; Grigoriev, D. N.; Leonov, V. V.; Oleynikov, V. P.; Porosev, V. V.; Savinov, G. A.

2017-02-01

X-ray detectors operating in the energy integrating mode are successfully used in many different applications. Nevertheless the direct photon counting detectors, having the superior parameters in comparison with the integrating ones, are rarely used yet. One of the reasons for this is the low value of the electrical signal generated by a detected photon. Silicon photomultiplier (SiPM) based scintillation counters have a high detection efficiency, high electronic gain and compact dimensions. This makes them a very attractive candidate to replace routinely used detectors in many fields. More than 10 years ago the digital scanning radiography system based on multistrip ionization chamber (MIC) was suggested at Budker Institute of Nuclear Physics. The detector demonstrates excellent radiation resistance and parameter stability after 5 year operations and an imaging of up to 1000 persons per day. Currently, the installations operate at several Russian airports and at subway stations in some cities. At the present time we design a new detector operating in the photon counting mode, having superior parameters than the gas one, based on scintillator - SiPM assemblies. This detector has close to zero noise, higher quantum efficiency and a count rate capability of more than 5 MHz per channel (20% losses), which leads to better image quality and improved detection capability. The suggested detector technology could be expanded to medical applications.

Comparison of Thermal Detector Arrays for Off-Axis THz Holography and Real-Time THz Imaging

PubMed Central

Hack, Erwin; Valzania, Lorenzo; Gäumann, Gregory; Shalaby, Mostafa; Hauri, Christoph P.; Zolliker, Peter

2016-01-01

In terahertz (THz) materials science, imaging by scanning prevails when low power THz sources are used. However, the application of array detectors operating with high power THz sources is increasingly reported. We compare the imaging properties of four different array detectors that are able to record THz radiation directly. Two micro-bolometer arrays are designed for infrared imaging in the 8–14 μm wavelength range, but are based on different absorber materials (i) vanadium oxide; (ii) amorphous silicon; (iii) a micro-bolometer array optimized for recording THz radiation based on silicon nitride; and (iv) a pyroelectric array detector for THz beam profile measurements. THz wavelengths of 96.5 μm, 118.8 μm, and 393.6 μm from a powerful far infrared laser were used to assess the technical performance in terms of signal to noise ratio, detector response and detectivity. The usefulness of the detectors for beam profiling and digital holography is assessed. Finally, the potential and limitation for real-time digital holography are discussed. PMID:26861341

Comparison of Thermal Detector Arrays for Off-Axis THz Holography and Real-Time THz Imaging.

PubMed

Hack, Erwin; Valzania, Lorenzo; Gäumann, Gregory; Shalaby, Mostafa; Hauri, Christoph P; Zolliker, Peter

2016-02-06

In terahertz (THz) materials science, imaging by scanning prevails when low power THz sources are used. However, the application of array detectors operating with high power THz sources is increasingly reported. We compare the imaging properties of four different array detectors that are able to record THz radiation directly. Two micro-bolometer arrays are designed for infrared imaging in the 8-14 μm wavelength range, but are based on different absorber materials (i) vanadium oxide; (ii) amorphous silicon; (iii) a micro-bolometer array optimized for recording THz radiation based on silicon nitride; and (iv) a pyroelectric array detector for THz beam profile measurements. THz wavelengths of 96.5 μm, 118.8 μm, and 393.6 μm from a powerful far infrared laser were used to assess the technical performance in terms of signal to noise ratio, detector response and detectivity. The usefulness of the detectors for beam profiling and digital holography is assessed. Finally, the potential and limitation for real-time digital holography are discussed.

1985 Nuclear Science Symposium, 32nd, and 1985 Symposium on Nuclear Power Systems, 17th, San Francisco, CA, October 23-25, 1985, Proceedings

NASA Technical Reports Server (NTRS)

1986-01-01

The present conference ranges over topics in high energy physics instrumentation, detectors, nuclear medical applications, health physics and environmental monitoring, reactor instrumentation, nuclear spacecraft instrumentation, the 'Fastbus' data acquisition system, circuits and systems for nuclear research facilities, and the development status of nuclear power systems. Specific attention is given to CCD high precision detectors, a drift chamber preamplifier, a Cerenkov ring imaging detector, novel scintillation glasses and scintillating fibers, a modular multidrift vertex detector, radial wire drift chambers, liquid argon polarimeters, a multianode photomultiplier, the reliability of planar silicon detectors, the design and manufacture of wedge and strip anodes, ultrafast triode photodetectors, photomultiplier tubes, a barium fluoride plastic scintillator, a fine grained neutron hodoscope, the stability of low leakage silicon photodiodes for crystal calorimeters, and X-ray proportional counters. Also considered are positron emission tomography, single photon emission computed tomography, nuclear magnetic resonance imaging, Geiger-Muller detectors, nuclear plant safeguards, a 32-bit Fastbus computer, an advanced light water reactor, and nuclear plant maintenance.

Optimization of detectors for the ILC

NASA Astrophysics Data System (ADS)

Suehara, Taikan; ILD Group; SID Group

2016-04-01

International Linear Collider (ILC) is a next-generation e+e- linear collider to explore Higgs, Beyond-Standard-Models, top and electroweak particles with great precision. We are optimizing our two detectors, International Large Detector (ILD) and Silicon Detector (SiD) to maximize the physics reach expected in ILC with reasonable detector cost and good reliability. The optimization study on vertex detectors, main trackers and calorimeters is underway. We aim to conclude the optimization to establish final designs in a few years, to finish detector TDR and proposal in reply to expected ;green sign; of the ILC project.

A low-power, radiation-resistant, Silicon-Drift-Detector array for extraterrestrial element mapping

NASA Astrophysics Data System (ADS)

Ramsey, B. D.; Gaskin, J. A.; Elsner, R. F.; Chen, W.; Carini, G. A.; De Geronimo, G.; Keister, J.; Li, S.; Li, Z.; Siddons, D. P.; Smith, G.

2012-02-01

We are developing a modular Silicon Drift Detector (SDD) X-Ray Spectrometer (XRS) for measuring the abundances of light surface elements (C to Fe) fluoresced by ambient radiation on remote airless bodies. The value of fluorescence spectrometry for surface element mapping is demonstrated by its inclusion on three recent lunar missions and by exciting new data that have recently been announced from the Messenger Mission to Mercury. The SDD-XRS instrument that we have been developing offers excellent energy resolution and an order of magnitude lower power requirement than conventional CCDs, making much higher sensitivities possible with modest spacecraft resources. In addition, it is significantly more radiation resistant than x-ray CCDs and therefore will not be subject to the degradation that befell recent lunar instruments. In fact, the intrinsic radiation resistance of the SDD makes it applicable even to the harsh environment of the Jovian system where it can be used to map the light surface elements of Europa. In this paper, we first discuss our element-mapping science-measurement goals. We then derive the necessary instrument requirements to meet these goals and discuss our current instrument development status with respect to these requirements.

The Focusing Optics X-ray Solar Imager (FOXSI)

NASA Astrophysics Data System (ADS)

Krucker, S.

2011-12-01

The Focusing Optics X-ray Solar Imager (FOXSI) is a NASA Low Cost Access to Space sounding rocket payload that will launch in early 2012. A larger sensitivity and dynamic range than currently available are needed in order to image faint X-rays from electron beams in the tenuous corona, particularly those near the coronal acceleration region and those that escape into interplanetary space. FOXSI combines nested, grazing-incidence replicated optics with double-sided silicon strip detectors to achieve a dynamic range of >100 and a sensitivity 100 times that of RHESSI. Advances in the fabrication and assembly of the optics at the NASA Marshall Space Flight Center provide a spatial resolution of 8 arcseconds (FWHM), while the silicon detectors, developed by the Astro-H team at ISAS/JAXA, offer an energy resolution of 0.4 keV. FOXSI's first flight will conduct a search for nonthermal electrons in the quiet Sun, possibly related to nanoflares. FOXSI will serve as a pathfinder for future space-based solar hard X-ray spectroscopic imagers, which will be able to image nonthermal electrons in flare acceleration sites and provide quantitative measurements such as energy spectra, densities, and energy content in accelerated electrons.

The Focusing Optics X-ray Solar Imager

NASA Astrophysics Data System (ADS)

Glesener, Lindsay; Krucker, S.; Christe, S.; Ramsey, B.; Ishikawa, S.; Takahashi, T.; Saito, S.

2011-05-01

The Focusing Optics X-ray Solar Imager (FOXSI) is a NASA Low Cost Access to Space sounding rocket payload that will launch in late 2011. A larger sensitivity and dynamic range than currently available are needed in order to image faint X-rays from electron beams in the tenuous corona, particularly those near any coronal acceleration region and those that escape into interplanetary space. FOXSI combines fast-replication, nested, grazing-incidence optics with double-sided silicon strip detectors to achieve a dynamic range of >100 and a sensitivity 100 times that of RHESSI. Advances in the fabrication and assembly of the optics at the NASA Marshall Space Flight Center provide a spatial resolution of 8 arcseconds, while the silicon detectors, developed by the Astro-H team at ISAS/JAXA, offer an energy resolution of 0.5 keV. FOXSI's first flight will be used to conduct a search for X-ray emission from nonthermal electron beams in quiet Sun nanoflares. In addition, FOXSI will serve as a pathfinder for future space-based solar hard X-ray spectroscopic imagers, which will be able to image nonthermal electrons in flare acceleration sites and provide quantitative measurements such as energy spectra, densities, and energy content in accelerated electrons.

A Low-Power, Radiation-Resistant, Silicon-Drift-Detector Array for Extraterrestrial Element Mapping

DOE Office of Scientific and Technical Information (OSTI.GOV)

Ramsey B. D.; De Geronimo G.; Gaskin, J.A.

2012-02-08

We are developing a modular Silicon Drift Detector (SDD) X-Ray Spectrometer (XRS) for measuring the abundances of light surface elements (C to Fe) fluoresced by ambient radiation on remote airless bodies. The value of fluorescence spectrometry for surface element mapping is demonstrated by its inclusion on three recent lunar missions and by exciting new data that have recently been announced from the Messenger Mission to Mercury. The SDD-XRS instrument that we have been developing offers excellent energy resolution and an order of magnitude lower power requirement than conventional CCDs, making much higher sensitivities possible with modest spacecraft resources. In addition,more » it is significantly more radiation resistant than x-ray CCDs and therefore will not be subject to the degradation that befell recent lunar instruments. In fact, the intrinsic radiation resistance of the SDD makes it applicable even to the harsh environment of the Jovian system where it can be used to map the light surface elements of Europa. In this paper, we first discuss our element-mapping science-measurement goals. We then derive the necessary instrument requirements to meet these goals and discuss our current instrument development status with respect to these requirements.« less

PAMELA: A Satellite Experiment for Antiparticles Measurement in Cosmic Rays

NASA Astrophysics Data System (ADS)

Bongi, M.; Adriani, O.; Ambriola, M.; Bakaldin, A.; Barbarino, G. C.; Basili, A.; Bazilevskaja, G.; Bellotti, R.; Bencardino, R.; Boezio, M.; Bogomolov, E. A.; Bonechi, L.; Bongiorno, L.; Bonvicini, V.; Boscherini, M.; Cafagna, F. S.; Campana, D.; Carlson, P.; Casolino, M.; Castellini, G.; Circella, M.; De Marzo, C. N.; De Pascale, M. P.; Furano, G.; Galper, A. M.; Giglietto, N.; Grigorjeva, A.; Koldashov, S. V.; Korotkov, M. G.; Krut'kov, S. Y.; Lund, J.; Lundquist, J.; Menicucci, A.; Menn, W.; Mikhailov, V. V.; Minori, M.; Mirizzi, N.; Mitchell, J. W.; Mocchiutti, E.; Morselli, A.; Mukhametshin, R.; Orsi, S.; Osteria, G.; Papini, P.; Pearce, M.; Picozza, P.; Ricci, M.; Ricciarini, S. B.; Romita, M.; Rossi, G.; Russo, S.; Schiavon, P.; Simon, M.; Sparvoli, R.; Spillantini, P.; Spinelli, P.; Stochaj, S. J.; Stozhkov, Y.; Straulino, S.; Streitmatter, R. E.; Taccetti, F.; Vacchi, A.; Vannuccini, E.; Vasilyev, G. I.; Voronov, S. A.; Wischnewski, R.; Yurkin, Y.; Zampa, G.; Zampa, N.

2004-06-01

PAMELA is a satellite-borne experiment that will study the antiproton and positron fluxes in cosmic rays in a wide range of energy (from 80 MeV up to 190 GeV for antiprotons and from 50 MeV up to 270 GeV for positrons) and with high statistics, and that will measure the antihelium/helium ratio with a sensitivity of the order of 10/sup -8/. The detector will fly on-board a polar orbiting Resurs DK1 satellite, which will be launched into space by a Soyuz rocket in 2004 from Baikonur cosmodrome in Kazakhstan, for a 3-year-long mission. Particle identification and energy measurements are performed in the PAMELA apparatus using the following subdetectors: a magnetic spectrometer made up of a permanent magnet equipped with double-sided microstrip silicon detectors, an electromagnetic imaging calorimeter composed of layers of tungsten absorber and silicon detectors planes, a transition radiation detector made of straw tubes interleaved with carbon fiber radiators, a plastic scintillator time-of-flight and trigger system, a set of anticounter plastic scintillator detectors, and a neutron detector. The features of the detectors and the main results obtained in beam test sessions are presented.

Directly-deposited blocking filters for high-performance silicon x-ray detectors

NASA Astrophysics Data System (ADS)

Bautz, M.; Kissel, S.; Masterson, R.; Ryu, K.; Suntharalingam, V.

2016-07-01

Silicon X-ray detectors often require blocking filters to mitigate noise and out-of-band signal from UV and visible backgrounds. Such filters must be thin to minimize X-ray absorption, so direct deposition of filter material on the detector entrance surface is an attractive approach to fabrication of robust filters. On the other hand, the soft (E < 1 keV) X-ray spectral resolution of the detector is sensitive to the charge collection efficiency in the immediate vicinity of its entrance surface, so it is important that any filter layer is deposited without disturbing the electric field distribution there. We have successfully deposited aluminum blocking filters, ranging in thickness from 70 to 220nm, on back-illuminated CCD X-ray detectors passivated by means of molecular beam epitaxy. Here we report measurements showing that directly deposited filters have little or no effect on soft X-ray spectral resolution. We also find that in applications requiring very large optical density (> OD 6) care must be taken to prevent light from entering the sides and mounting surfaces of the detector. Our methods have been used to deposit filters on the detectors of the REXIS instrument scheduled to fly on OSIRIS-ReX later this year.

Spectral perturbations from silicon diode detector encapsulation and shielding in photon fields.

PubMed

Eklund, Karin; Ahnesjö, Anders

2010-11-01

Silicon diodes are widely used as detectors for relative dose measurements in radiotherapy. The common manufacturing practice is to encapsulate the diodes in plastic for protection and to facilitate mounting in scanning devices. Diodes intended for use in photon fields commonly also have a shield of a high atomic number material (usually tungsten) integrated into the encapsulation to selectively absorb low-energy photons to which silicon diodes would otherwise over-response. However, new response models based on cavity theories and spectra calculations have been proposed for direct correction of the readout from unshielded (e.g., "electron") diodes used in photon fields. This raises the question whether it is correct to assume that the spectrum in a water phantom at the location of the detector cavity is not perturbed by the detector encapsulation materials. The aim of this work is to investigate the spectral effects of typical encapsulations, including shielding, used for clinical diodes. The effects of detector encapsulation of an unshielded and a shielded commercial diode on the spectra at the detector cavity location are studied through Monte Carlo simulations with PENELOPE-2005. Variance reduction based on correlated sampling is applied to reduce the CPU time needed for the simulations. The use of correlated sampling is found to be efficient and to not introduce any significant bias to the results. Compared to reference spectra calculated in water, the encapsulation for an unshielded diode is demonstrated to not perturb the spectrum, while a tungsten shielded diode caused not only the desired decrease in low-energy scattered photons but also a large increase of the primary electron fluence. Measurements with a shielded diode in a 6 MV photon beam proved that the shielding does not completely remove the field-size dependence of the detector response caused by the over-response from low-energy photons. Response factors of a properly corrected unshielded diode were shown to give comparable, or better, results than the traditionally used shielded diode. Spectra calculated for photon fields in water can be directly used for modeling the response of unshielded silicon diodes with plastic encapsulations. Unshielded diodes used together with appropriate corrections can replace shielded diodes in photon dose measurements.

Bolometeric detector arrays for CMB polarimetry

NASA Technical Reports Server (NTRS)

Kuo, C. L.; Bock, J. J.; Day, P.; Goldin, A.; Golwala, S.; Holmes, W.; Irwin, K.; Kenyon, M.; Lange, A. E.; LeDuc, H. G.;

Development of New High Resolution Neutron Detector

NASA Astrophysics Data System (ADS)

Mostella, L. D., III; Rajabali, M.; Loureiro, D. P.; Grzywacz, R.

2017-09-01

Beta-delayed neutron emission is a prevalent form of decay for neutron-rich nuclei. This occurs when an unstable nucleus undergoes beta decay, but produces a daughter nucleus in an excited state above the neutron separation energy. The daughter nucleus then de-excites by ejecting one or more neutrons. We wish to map the states from which these nuclei decay via neutron spectroscopy using NEXT, a new high resolution neutron detector. NEXT utilizes silicon photomultipliers and 6 mm thick pulse-shape discriminating plastic scintillators, allowing for smaller and more compact modular geometries in the NEXT array. Timing measurements for the detector were performed and a resolution of 893 ps (FWHM) has been achieved so far. Aspects of the detector that were investigated and will be presented here include scintillator geometry, wrapping materials, fitting functions for the digitized signals, and electronic components coupled to the silicon photomultipliers for signal shaping.

Microstructured silicon neutron detectors for security applications

NASA Astrophysics Data System (ADS)

Esteban, S.; Fleta, C.; Guardiola, C.; Jumilla, C.; Pellegrini, G.; Quirion, D.; Rodriguez, J.; Lozano, M.

2014-12-01

In this paper we present the design and performance of a perforated thermal neutron silicon detector with a 6LiF neutron converter. This device was manufactured within the REWARD project workplace whose aim is to develop and enhance technologies for the detection of nuclear and radiological materials. The sensor perforated structure results in a higher efficiency than that obtained with an equivalent planar sensor. The detectors were tested in a thermal neutron beam at the nuclear reactor at the Instituto Superior Técnico in Lisbon and the intrinsic detection efficiency for thermal neutrons and the gamma sensitivity were obtained. The Geant4 Monte Carlo code was used to simulate the experimental conditions, i.e. thermal neutron beam and the whole detector geometry. An intrinsic thermal neutron detection efficiency of 8.6%±0.4% with a discrimination setting of 450 keV was measured.

Measurements on a full-field digital mammography system with a photon counting crystalline silicon detector

NASA Astrophysics Data System (ADS)

Lundqvist, Mats; Danielsson, Mats; Cederstroem, Bjoern; Chmill, Valery; Chuntonov, Alexander; Aslund, Magnus

2003-06-01

Sectra Microdose is the first single photon counting mammography detector. An edge-on crystalline silicon detector is connected to application specific integrated circuits that individually process each photon. The detector is scanned across the breast and the rejection of scattered radiation exceeds 97% without the use of a Bucky. Processing of each x-rays individually enables an optimization of the information transfer from the x-rays to the image in a way previously not possible. Combined with an almost absence of noise from scattered radiation and from electronics we foresee a possibility to reduce the radiation dose and/or increase the image quality. We will discuss fundamental features of the new direct photon counting technique in terms of dose efficiency and present preliminary measurements for a prototype on physical parameters such as Noise Power Spectra (NPS), MTF and DQE.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Schambach, Joachim; Anderssen, Eric; Contin, Giacomo

For the 2014 heavy ion run of RHIC a new micro-vertex detector called the Heavy Flavor Tracker (HFT) was installed in the STAR experiment. The HFT consists of three detector subsystems with various silicon technologies arranged in 4 approximately concentric cylinders close to the STAR interaction point designed to improve the STAR detector’s vertex resolution and extend its measurement capabilities in the heavy flavor domain. The two innermost HFT layers are placed at radii of 2.8 cm and 8 cm from the beam line. These layers are constructed with 400 high resolution sensors based on CMOS Monolithic Active Pixel Sensormore » (MAPS) technology arranged in 10-sensor ladders mounted on 10 thin carbon fiber sectors to cover a total silicon area of 0.16 m 2. Each sensor of this PiXeL (“PXL”) sub-detector combines a pixel array of 928 rows and 960 columns with a 20.7 μm pixel pitch together with front-end electronics and zero-suppression circuitry in one silicon die providing a sensitive area of ~3.8 cm 2. This sensor architecture features 185.6 μs readout time and 170 mW/cm 2 power dissipation. This low power dissipation allows the PXL detector to be air-cooled, and with the sensors thinned down to 50 μm results in a global material budget of only 0.4% radiation length per layer. A novel mechanical approach to detector insertion allows us to effectively install and integrate the PXL sub-detector within a 12 hour period during an on-going multi-month data taking period. The detector requirements, architecture and design, as well as the performance after installation, are presented in this paper.« less

Fabrication of an Absorber-Coupled MKID Detector

NASA Technical Reports Server (NTRS)

Brown, Ari; Hsieh, Wen-Ting; Moseley, Samuel; Stevenson, Thomas; U-Yen, Kongpop; Wollack, Edward

2012-01-01

Absorber-coupled microwave kinetic inductance detector (MKID) arrays were developed for submillimeter and far-infrared astronomy. These sensors comprise arrays of lambda/2 stepped microwave impedance resonators patterned on a 1.5-mm-thick silicon membrane, which is optimized for optical coupling. The detector elements are supported on a 380-mm-thick micro-machined silicon wafer. The resonators consist of parallel plate aluminum transmission lines coupled to low-impedance Nb microstrip traces of variable length, which set the resonant frequency of each resonator. This allows for multiplexed microwave readout and, consequently, good spatial discrimination between pixels in the array. The transmission lines simultaneously act to absorb optical power and employ an appropriate surface impedance and effective filling fraction. The fabrication techniques demonstrate high-fabrication yield of MKID arrays on large, single-crystal membranes and sub-micron front-to-back alignment of the micro strip circuit. An MKID is a detector that operates upon the principle that a superconducting material s kinetic inductance and surface resistance will change in response to being exposed to radiation with a power density sufficient to break its Cooper pairs. When integrated as part of a resonant circuit, the change in surface impedance will result in a shift in its resonance frequency and a decrease of its quality factor. In this approach, incident power creates quasiparticles inside a superconducting resonator, which is configured to match the impedance of free space in order to absorb the radiation being detected. For this reason MKIDs are attractive for use in large-format focal plane arrays, because they are easily multiplexed in the frequency domain and their fabrication is straightforward. The fabrication process can be summarized in seven steps: (1) Alignment marks are lithographically patterned and etched all the way through a silicon on insulator (SOI) wafer, which consists of a thin silicon membrane bonded to a thick silicon handle wafer. (2) The metal microwave circuitry on the front of the membrane is patterned and etched. (3) The wafer is then temporarily bonded with wafer wax to a Pyrex wafer, with the SOI side abutting the Pyrex. (4) The silicon handle component of the SOI wafer is subsequently etched away so as to expose the membrane backside. (5) The wafer is flipped over, and metal microwave circuitry is patterned and etched on the membrane backside. Furthermore, cuts in the membrane are made so as to define the individual detector array chips. (6) Silicon frames are micromachined and glued to the silicon membrane. (7) The membranes, which are now attached to the frames, are released from the Pyrex wafer via dissolution of the wafer wax in acetone.

The use of cosmic-ray muons in the energy calibration of the Beta-decay Paul Trap silicon-detector array

DOE Office of Scientific and Technical Information (OSTI.GOV)

Hirsh, T. Y.; Perez Galvan, A.; Burkey, M.

This article presents an approach to calibrate the energy response of double-sided silicon strip detectors (DSSDs) for low-energy nuclear-science experiments by utilizing cosmic-ray muons. For the 1-mm-thick detectors used with the Beta-decay Paul Trap, the minimum-ionizing peak from these muons provides a stable and time-independent in situ calibration point at around 300 keV, which supplements the calibration data obtained above 3 MeV from sources. The muon-data calibration is achieved by comparing experimental spectra with detailed Monte Carlo simulations performed using GEANT4 and CRY codes. This additional information constrains the calibration at lower energies, resulting in improvements in quality and accuracy.

Scintillation light detectors with Neganov Luke amplification

NASA Astrophysics Data System (ADS)

Isaila, C.; Boslau, O.; Coppi, C.; Feilitzsch, F. v.; Goldstraß, P.; Jagemann, T.; Jochum, J.; Kemmer, J.; Lachenmaier, T.; Lanfranchi, J.-C.; Pahlke, A.; Potzel, W.; Rau, W.; Stark, M.; Wernicke, D.; Westphal, W.

2006-04-01

For an active suppression of the gamma and electron background in the Cryogenic Rare Event Search with Superconducting Thermometers (CRESST) dark matter experiment both phonons and scintillation light generated in a CaWO 4 crystal are detected simultaneously. The phonon signal is read out by a transition edge sensor (TES) on the CaWO 4 crystal. For light detection a silicon absorber equipped with a TES is employed. An efficient background discrimination requires very sensitive light detectors. The threshold can be improved by applying an electric field to the silicon crystal leading to an amplification of the thermal signal due to the Neganov-Luke effect. Measurements showing the improved sensitivity of the light detectors as well as future steps for reducing the observed extra noise will be presented.

Gamma-ray detector employing scintillators coupled to semiconductor drift photodetectors

DOE Office of Scientific and Technical Information (OSTI.GOV)

Iwanczyk, Jan S.; Patt, Bradley E.

Radiation detectors according to one embodiment of the invention are implemented using scintillators combined with a semiconductor drift photodetectors wherein the components are specifically constructed in terms of their geometry, dimensions, and arrangement so that the scintillator decay time and drift time in the photodetector pairs are matched in order to achieve a greater signal-to-noise ratio. The detectors may include electronics for amplification of electrical signals produced by the silicon drift photodetector, the amplification having a shaping time optimized with respect to the decay time of the scintillator and time spread of the signal in the silicon drift photodetector tomore » substantially maximize the ratio of the signal to the electronic noise.« less

Thermal detectors as single photon X-ray spectrometers

NASA Technical Reports Server (NTRS)

Moseley, S. H.; Kelley, R. L.; Mather, J. C.; Mushotzky, R. F.; Szymkowiak, A. E.; Mccammon, D.

1985-01-01

In a thermal detector employed for X-ray spectroscopy applications, the energy of an X-ray is converted to heat in a small mass, and the energy of that X-ray inferred from the size of the temperature rise. The present investigation is concerned with the possibility to make an extremely low heat capacity calorimeter which can be employed as a thermal detector. Several types of calorimeters were fabricated and tested at temperatures as low as approximately 0.05 K. The obtained devices make use of thermistors constructed of melt-doped silicon, nuclear transmutation doped (NTD) germanium, and ion-implanted silicon with a variety of materials for the support and electrical leads. The utility of these microcalorimeters as X-ray spectrometers could be verified.

The use of cosmic-ray muons in the energy calibration of the Beta-decay Paul Trap silicon-detector array

NASA Astrophysics Data System (ADS)

Hirsh, T. Y.; Pérez Gálvan, A.; Burkey, M. T.; Aprahamian, A.; Buchinger, F.; Caldwell, S.; Clark, J. A.; Gallant, A. T.; Heckmaier, E.; Levand, A. F.; Marley, S. T.; Morgan, G. E.; Nystrom, A.; Orford, R.; Savard, G.; Scielzo, N. D.; Segel, R.; Sharma, K. S.; Siegl, K.; Wang, B. S.

2018-04-01

This article presents an approach to calibrate the energy response of double-sided silicon strip detectors (DSSDs) for low-energy nuclear-science experiments by utilizing cosmic-ray muons. For the 1-mm-thick detectors used with the Beta-decay Paul Trap, the minimum-ionizing peak from these muons provides a stable and time-independent in situ calibration point at around 300 keV, which supplements the calibration data obtained above 3 MeV from α sources. The muon-data calibration is achieved by comparing experimental spectra with detailed Monte Carlo simulations performed using GEANT4 and CRY codes. This additional information constrains the calibration at lower energies, resulting in improvements in quality and accuracy.

An ultra-thin Schottky diode as a transmission particle detector for biological microbeams.

PubMed

Grad, Michael; Harken, Andrew; Randers-Pehrson, Gerhard; Attinger, Daniel; Brenner, David J

2012-12-01

We fabricated ultrathin metal-semiconductor Schottky diodes for use as transmission particle detectors in the biological microbeam at Columbia University's Radiological Research Accelerator Facility (RARAF). The RARAF microbeam can deliver a precise dose of ionizing radiation in cell nuclei with sub-micron precision. To ensure an accurate delivery of charged particles, the facility currently uses a commercial charged-particle detector placed after the sample. We present here a transmission detector that will be placed between the particle accelerator and the biological specimen, allowing the irradiation of samples that would otherwise block radiation from reaching a detector behind the sample. Four detectors were fabricated with co-planar gold and aluminum electrodes thermally evaporated onto etched n-type crystalline silicon substrates, with device thicknesses ranging from 8.5 μm - 13.5 μm. We show coincident detections and pulse-height distributions of charged particles in both the transmission detector and the commercial detector above it. Detections are demonstrated at a range of operating conditions, including incoming particle type, count rate, and beam location on the detectors. The 13.5 μm detector is shown to work best to detect 2.7 MeV protons (H + ), and the 8.5 μm detector is shown to work best to detect 5.4 MeV alpha particles ( 4 He ++ ). The development of a transmission detector enables a range of new experiments to take place at RARAF on radiation-stopping samples such as thick tissues, targets that need immersion microscopy, and integrated microfluidic devices for handling larger quantities of cells and small organisms.

An ultra-thin Schottky diode as a transmission particle detector for biological microbeams

PubMed Central

Harken, Andrew; Randers-Pehrson, Gerhard; Attinger, Daniel; Brenner, David J.

2013-01-01

We fabricated ultrathin metal-semiconductor Schottky diodes for use as transmission particle detectors in the biological microbeam at Columbia University’s Radiological Research Accelerator Facility (RARAF). The RARAF microbeam can deliver a precise dose of ionizing radiation in cell nuclei with sub-micron precision. To ensure an accurate delivery of charged particles, the facility currently uses a commercial charged-particle detector placed after the sample. We present here a transmission detector that will be placed between the particle accelerator and the biological specimen, allowing the irradiation of samples that would otherwise block radiation from reaching a detector behind the sample. Four detectors were fabricated with co-planar gold and aluminum electrodes thermally evaporated onto etched n-type crystalline silicon substrates, with device thicknesses ranging from 8.5 μm – 13.5 μm. We show coincident detections and pulse-height distributions of charged particles in both the transmission detector and the commercial detector above it. Detections are demonstrated at a range of operating conditions, including incoming particle type, count rate, and beam location on the detectors. The 13.5 μm detector is shown to work best to detect 2.7 MeV protons (H+), and the 8.5 μm detector is shown to work best to detect 5.4 MeV alpha particles (4He++). The development of a transmission detector enables a range of new experiments to take place at RARAF on radiation-stopping samples such as thick tissues, targets that need immersion microscopy, and integrated microfluidic devices for handling larger quantities of cells and small organisms. PMID:24058378

The NSLS 100 element solid state array detector

PubMed Central

Furenlid, L.R.; Kraner, H.W.; Rogers, L.C.; Cramer, S.P.; Stephani, D.; Beuttenmuller, R.H.; Beren, J.

2015-01-01

X-ray absorption studies of dilute samples require fluorescence detection techniques. Since signal-to-noise ratios are governed by the ratio of fluorescent to scattered photons counted by a detector, solid state detectors which can discriminate between fluorescence and scattered photons have become the instruments of choice for trace element measurements. Commercially available 13 element Ge array detectors permitting total count rates < 500000 counts per second are now in routine use. Since X-ray absorption beamlines at high brightness synchrotron sources can already illuminate most dilute samples with enough flux to saturate the current generation of solid state detectors, the development of next-generation instruments with significantly higher total count rates is essential. We present the design and current status of the 100 element Si array detector being developed in a collaboration between the NSLS and the Instrumentation Division at Brookhaven National Laboratory. The detecting array consists of a 10×10 matrix of 4 mm×4 mm elements laid out on a single piece of ultrahigh purity silicon mounted at the front end of a liquid nitrogen dewar assembly. A matrix of charge sensitive integrating preamplifiers feed signals to an array of shaping amplifiers, single channel analyzers, and scalers. An electronic switch, delay amplifier, linear gate, digital scope, peak sensing A/D converter, and histogramining memory module provide for complete diagnostics and channel calibration. The entire instrument is controlled by a LabView 2 application on a MacII ci; the software also provides full control over beamline hardware and performs the data collection. PMID:26722135

A New Active Space Radiation Instruments for the International Space Station, A-DREAMS

NASA Astrophysics Data System (ADS)

Uchihori, Yukio; Kodaira, Satoshi; Kitamura, Hisashi; Kobayashi, Shingo

For future space experiments in the International Space Station (ISS) or other satellites, radiation detectors, A-DREAMS (Active Dosimeter for Radiation Environment and Astronautic Monitoring in Space), using single or multiple silicon semi-conductor detectors have been developed. The first version of the detectors were produced and calibrated with particle accelerators. National Institute of Radiological Sciences has a medical heavy ion accelerator (HIMAC) for cancer therapy and a cyclotron accelerator. The detector was irradiated with high energy heavy ions and protons in HIMAC and the cyclotron and calibrated the energy resolution and linearity for deposited energies of these particles. We are planned to be going to use the new instrument in an international project, the new MATROSHKA experiment which is directed by members in the Institute of Bio-Medical Problem (IBMP) in Russia and German Space Center (DLR) in Germany. In the project, the dose distribution in human torso phantom will be investigated for several months in the ISS. For the project, a new type of the instruments is under development in NIRS and the current situation will be reported in this paper.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Aab, A.; Abreu, P.; Aglietta, M.

Here, AMIGA (Auger Muons and Infill for the Ground Array) is an upgrade of the Pierre Auger Observatory designed to extend its energy range of detection and to directly measure the muon content of the cosmic ray primary particle showers. The array will be formed by an infill of surface water-Cherenkov detectors associated with buried scintillation counters employed for muon counting. Each counter is composed of three scintillation modules, with a 10 m 2 detection area per module. In this paper, a new generation of detectors, replacing the current multi-pixel photomultiplier tube (PMT) with silicon photo sensors (aka. SiPMs), ismore » proposed. The selection of the new device and its front-end electronics is explained. A method to calibrate the counting system that ensures the performance of the detector is detailed. This method has the advantage of being able to be carried out in a remote place such as the one where the detectors are deployed. High efficiency results, i.e. 98% efficiency for the highest tested overvoltage, combined with a low probability of accidental counting (~2%), show a promising performance for this new system.« less

TES development for a frequency selective bolometer camera.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Datesman, A. M.; Downes, T. P.; Perera, T. A.

2009-06-01

We discuss the development, at Argonne National Laboratory (ANL), of a four-pixel camera with four spectral channels centered at 150, 220, 270, and 360 GHz. The scientific motivation involves photometry of distant dusty galaxies located by Spitzer and SCUBA, as well as the study of other millimeter-wave sources such as ultra-luminous infrared galaxies, the Sunyaev-Zeldovich effect in clusters, and galactic dust. The camera incorporates Frequency Selective Bolometer (FSB) and superconducting Transition-Edge Sensor (TES) technology. The current generation of TES devices we examine utilizes proximity effect superconducting bilayers of Mo/Au, Ti, or Ti/Au as TESs, located along with frequency selective absorbingmore » structures on silicon nitride membranes. The detector incorporates lithographically patterned structures designed to address both TES device stability and detector thermal transport concerns. The membrane is not perforated, resulting in a detector which is comparatively robust mechanically. In this paper, we report on the development of the superconducting bilayer TES technology, the design and testing of the detector thermal transport and device stability control structures, optical and thermal test results, and the use of new materials.« less

A new strips tracker for the upgraded ATLAS ITk detector

NASA Astrophysics Data System (ADS)

David, C.

2018-01-01

The ATLAS detector has been designed and developed to function in the environment of the present Large Hadron Collider (LHC). At the next-generation tracking detector proposed for the High Luminosity LHC (HL-LHC), the so-called ATLAS Phase-II Upgrade, the fluences and radiation levels will be higher by as much as a factor of ten. The new sub-detectors must thus be faster, of larger area, more segmented and more radiation hard while the amount of inactive material should be minimized and the power supply to the front-end systems should be increased. For those reasons, the current inner tracker of the ATLAS detector will be fully replaced by an all-silicon tracking system that consists of a pixel detector at small radius close to the beam line and a large area strip tracker surrounding it. This document gives an overview of the design of the strip inner tracker (Strip ITk) and summarises the intensive R&D activities performed over the last years by the numerous institutes within the Strips ITk collaboration. These studies are accompanied with a strong prototyping effort to contribute to the optimisation of the Strip ITk's structure and components. This effort culminated recently in the release of the ATLAS Strips ITk Technical Design Report (TDR).

Development of the focal plane system for the SEparator for CApture Reactions

NASA Astrophysics Data System (ADS)

Hood, A. A. D.; Blackmon, J. C.; Cottingham, R.; Deibel, C. M.; Good, E.; Joerres, K.; Laminack, A.; Garrity, A.; Secar Collaboration

2017-09-01

The SEparator for CApture Reactions (SECAR) is currently under construction for the National Superconducting Cyclotron Laboratory and future Facility for Rare Isotope Beams. SECAR is designed to conduct sensitive measurements of capture reactions critical to understanding stellar explosions. We have developed a versatile focal plane system that will differentiate reaction recoils from unreacted scattered beam particles in measurements covering a large range of energies and masses. The elements of the focal plane system include two metal-foil, micro-channel plate (MCP) detectors, a variety of diagnostics, and two alternative recoil stopping detectors. The MCP detectors will measure the time-of-flight (and therefore velocity) as well as the position of the recoils. Our primary heavy ion recoil detector is a gas ionization chamber that measures position, total energy and relative energy loss and provides good atomic number discrimination at energies greater than about 0.5 MeV/u. For some cases, this gas counter will be replaced by silicon strip detectors to provide superior energy resolution. We will describe the overall design and report on construction and testing of the detector systems. Supported by the U.S. Department of Energy, Office of Science, Office of Nuclear Physics, under Awards DE-SC0014384 and DE-FG02-96ER40978.

Germanium: From Its Discovery to SiGe Devices

DOE Office of Scientific and Technical Information (OSTI.GOV)

Haller, E.E.

2006-06-14

Germanium, element No.32, was discovered in 1886 by Clemens Winkler. Its first broad application was in the form of point contact Schottky diodes for radar reception during WWII. The addition of a closely spaced second contact led to the first all-solid-state electronic amplifier device, the transistor. The relatively low bandgap, the lack of a stable oxide and large surface state densities relegated germanium to the number 2 position behind silicon. The discovery of the lithium drift process, which made possible the formation of p-i-n diodes with fully depletable i-regions several centimeters thick, led germanium to new prominence as the premiermore » gamma-ray detector. The development of ultra-pure germanium yielded highly stable detectors which have remained unsurpassed in their performance. New acceptors and donors were discovered and the electrically active role of hydrogen was clearly established several years before similar findings in silicon. Lightly doped germanium has found applications as far infrared detectors and heavily Neutron Transmutation Doped (NTD) germanium is used in thermistor devices operating at a few milliKelvin. Recently germanium has been rediscovered by the silicon device community because of its superior electron and hole mobility and its ability to induce strains when alloyed with silicon. Germanium is again a mainstream electronic material.« less

Fabrication of a Silicon Backshort Assembly for Waveguide-Coupled Superconducting Detectors

NASA Technical Reports Server (NTRS)

Crowe, Erik J.; Bennett, Charles L.; Chuss, David T.; Denis, Kevin L.; Eimer, Joseph; Lourie, Nathan; Marriage, Tobias; Moseley, Samuel H.; Rostem, Karwan; Stevenson, Thomas R.;

Calibration of a Fusion Experiment to Investigate the Nuclear Caloric Curve

NASA Astrophysics Data System (ADS)

Keeler, Ashleigh

2017-09-01

In order to investigate the nuclear equation of state (EoS), the relation between two thermodynamic quantities can be examined. The correlation between the temperature and excitation energy of a nucleus, also known as the caloric curve, has been previously observed in peripheral heavy-ion collisions to exhibit a dependence on the neutron-proton asymmetry. To further investigate this result, fusion reactions (78Kr + 12C and 86Kr + 12C) were measured; the beam energy was varied in the range 15-35 MeV/u in order to vary the excitation energy. The light charged particles (LCPs) evaporated from the compound nucleus were measured in the Si-CsI(TI)/PD detector array FAUST (Forward Array Using Silicon Technology). The LCPs carry information about the temperature. The calibration of FAUST will be described in this presentation. The silicon detectors have resistive surfaces in perpendicular directions to allow position measurement of the LCP's to better than 200 um. The resistive nature requires a position-dependent correction to the energy calibration to take full advantage of the energy resolution. The momentum is calculated from the energy of these particles, and their position on the detectors. A parameterized formula based on the Bethe-Bloch equation was used to straighten the particle identification (PID) lines measured with the dE-E technique. The energy calibration of the CsI detectors is based on the silicon detector energy calibration and the PID. A precision slotted mask enables the relative positions of the detectors to be determined. DOE Grant: DE-FG02-93ER40773 and REU Grant: PHY - 1659847.

Development of a switched integrator amplifier for high-accuracy optical measurements.

PubMed

Mountford, John; Porrovecchio, Geiland; Smid, Marek; Smid, Radislav

2008-11-01

In the field of low flux optical measurements, the development and use of large area silicon detectors is becoming more frequent. The current/voltage conversion of their photocurrent presents a set of problems for traditional transimpedance amplifiers. The switched integration principle overcomes these limitations. We describe the development of a fully characterized current-voltage amplifier using the switched integrator technique. Two distinct systems have been developed in parallel at the United Kingdom's National Physical Laboratory (NPL) and Czech Metrology Institute (CMI) laboratories. We present the circuit theory and best practice in the design and construction of switched integrators. In conclusion the results achieved and future developments are discussed.

Mechanisms of Current Transfer in Electrodeposited Layers of Submicron Semiconductor Particles

NASA Astrophysics Data System (ADS)

Zhukov, N. D.; Mosiyash, D. S.; Sinev, I. V.; Khazanov, A. A.; Smirnov, A. V.; Lapshin, I. V.

2017-12-01

Current-voltage ( I- V) characteristics of conductance in multigrain layers of submicron particles of silicon, gallium arsenide, indium arsenide, and indium antimonide have been studied. Nanoparticles of all semiconductors were obtained by processing initial single crystals in a ball mill and applied after sedimentation onto substrates by means of electrodeposition. Detailed analysis of the I- V curves of electrodeposited layers shows that their behavior is determined by the mechanism of intergranular tunneling emission from near-surface electron states of submicron particles. Parameters of this emission process have been determined. The proposed multigrain semiconductor structures can be used in gas sensors, optical detectors, IR imagers, etc.

Si:As BIB detector arrays

NASA Technical Reports Server (NTRS)

Bharat, R.; Petroff, M. D.; Speer, J. J.; Stapelbroek, M. G.

1986-01-01

Highlights of the results obtained on arsenic-doped silicon blocked impurity band (BIB) detectors and arrays since the invention of the BIB concept a few years ago are presented. After a brief introduction and a description of the BIB concept, data will be given on single detector performance. Then different arrays that were fabricated will be described and test data presented.

Evaluation of a hybrid pixel detector for electron microscopy.

PubMed

Faruqi, A R; Cattermole, D M; Henderson, R; Mikulec, B; Raeburn, C

2003-04-01

We describe the application of a silicon hybrid pixel detector, containing 64 by 64 pixels, each 170 microm(2), in electron microscopy. The device offers improved resolution compared to CCDs along with faster and noiseless readout. Evaluation of the detector, carried out on a 120 kV electron microscope, demonstrates the potential of the device.

High speed photodiodes in standard nanometer scale CMOS technology: a comparative study.

PubMed

Nakhkoob, Behrooz; Ray, Sagar; Hella, Mona M

2012-05-07

This paper compares various techniques for improving the frequency response of silicon photodiodes fabricated in mainstream CMOS technology for fully integrated optical receivers. The three presented photodiodes, Spatially Modulated Light detectors, Double, and Interrupted P-Finger photodiodes, aim at reducing the low speed diffusive component of the photo generated current. For the first photodiode, Spatially Modulated Light (SML) detectors, the low speed current component is canceled out by converting it to a common mode current driving a differential transimpedance amplifier. The Double Photodiode (DP) uses two depletion regions to increase the fast drift component, while the Interrupted-P Finger Photodiode (IPFPD) redirects the low speed component towards a different contact from the main fast terminal of the photodiode. Extensive device simulations using 130 nm CMOS technology-parameters are presented to compare their performance using the same technological platform. Finally a new type of photodiode that uses triple well CMOS technology is introduced that can achieve a bandwidth of roughly 10 GHz without any process modification or high reverse bias voltages that would jeopardize the photodetector and subsequent transimpedance amplifier reliability.

Multilayer Semiconductor Charged-Particle Spectrometers for Accelerator Experiments

NASA Astrophysics Data System (ADS)

Gurov, Yu. B.; Lapushkin, S. V.; Sandukovsky, V. G.; Chernyshev, B. A.

2018-03-01

The current state of studies in the field of development of multilayer semiconductor systems (semiconductor detector (SCD) telescopes), which allow the energy to be precisely measured within a large dynamic range (from a few to a few hundred MeV) and the particles to be identified in a wide mass range (from pions to multiply charged nuclear fragments), is presented. The techniques for manufacturing the SCD telescopes from silicon and high-purity germanium are described. The issues of measuring characteristics of the constructed detectors and their impact on the energy resolution of the SCD telescopes and on the quality of the experimental data are considered. Much attention is given to the use of the constructed semiconductor devices in experimental studies at accelerators of PNPI (Gatchina), LANL (Los Alamos) and CELSIUS (Uppsala).

Using Poisson-regularized inversion of Bremsstrahlung emission to extract full electron energy distribution functions from x-ray pulse-height detector data

NASA Astrophysics Data System (ADS)

Swanson, C.; Jandovitz, P.; Cohen, S. A.

2018-02-01

We measured Electron Energy Distribution Functions (EEDFs) from below 200 eV to over 8 keV and spanning five orders-of-magnitude in intensity, produced in a low-power, RF-heated, tandem mirror discharge in the PFRC-II apparatus. The EEDF was obtained from the x-ray energy distribution function (XEDF) using a novel Poisson-regularized spectrum inversion algorithm applied to pulse-height spectra that included both Bremsstrahlung and line emissions. The XEDF was measured using a specially calibrated Amptek Silicon Drift Detector (SDD) pulse-height system with 125 eV FWHM at 5.9 keV. The algorithm is found to out-perform current leading x-ray inversion algorithms when the error due to counting statistics is high.

Characterization of Si p-i-n diode for scanning transmission ion microanalysis of biological samples

NASA Astrophysics Data System (ADS)

Devès, G.; Matsuyama, S.; Barbotteau, Y.; Ishii, K.; Ortega, R.

2006-05-01

The performance of a silicon p-i-n diode (Hamamatsu S1223-01) for the detection of charged particles was investigated and compared with the response of a standard passivated implanted planar silicon (PIPS) detector. The photodiode was characterized by ion beam induced charge collection with a micrometer spatial resolution using proton and alpha particle beams in the 1-3MeV energy range. Results indicate that homogeneity, energy resolution, and reproducibility of detection of charged particles enable the use of the low cost silicon p-i-n device as a replacement of conventional PIPS detector during scanning transmission ion microanalysis experiments. The Si p-i-n diode detection setup was successfully applied to scanning transmission ion microscopy determination of subcellular compartments on human cancer cultured cells.

Alignment of the Pixel and SCT Modules for the 2004 ATLAS Combined Test Beam

DOE Office of Scientific and Technical Information (OSTI.GOV)

ATLAS Collaboration; Ahmad, A.; Andreazza, A.

2008-06-02

A small set of final prototypes of the ATLAS Inner Detector silicon tracking system(Pixel Detector and SemiConductor Tracker), were used to take data during the 2004 Combined Test Beam. Data were collected from runs with beams of different flavour (electrons, pions, muons and photons) with a momentum range of 2 to 180 GeV/c. Four independent methods were used to align the silicon modules. The corrections obtained were validated using the known momenta of the beam particles and were shown to yield consistent results among the different alignment approaches. From the residual distributions, it is concluded that the precision attained inmore » the alignmentof the silicon modules is of the order of 5 mm in their most precise coordinate.« less

Excited-state lifetime measurement of silicon vacancy centers in diamond by single-photon frequency upconversion

NASA Astrophysics Data System (ADS)

Rong, Youying; Ma, Jianhui; Chen, Lingxiao; Liu, Yan; Siyushev, Petr; Wu, Botao; Pan, Haifeng; Jelezko, Fedor; Wu, E.; Zeng, Heping

2018-05-01

We report a method with high time resolution to measure the excited-state lifetime of silicon vacancy centers in bulk diamond avoiding timing jitter from the single-photon detectors. Frequency upconversion of the fluorescence emitted from silicon vacancy centers was achieved from 738 nm to 436 nm via sum frequency generation with a short pump pulse. The excited-state lifetime can be obtained by measuring the intensity of upconverted light while the pump delay changes. As a probe, a pump laser with pulse duration of 11 ps provided a high temporal resolution of the measurement. The lifetime extracted from the pump–probe curve was 0.755 ns, which was comparable to the timing jitter of the single-photon detectors.

A novel multi-cell silicon drift detector for Low Energy X-Ray Fluorescence (LEXRF) spectroscopy

NASA Astrophysics Data System (ADS)

Bufon, J.; Ahangarianabhari, M.; Bellutti, P.; Bertuccio, G.; Carrato, S.; Cautero, G.; Fabiani, S.; Giacomini, G.; Gianoncelli, A.; Giuressi, D.; Grassi, M.; Malcovati, P.; Menk, R. H.; Picciotto, A.; Piemonte, C.; Rashevskaya, I.; Rachevski, A.; Stolfa, A.; Vacchi, A.; Zampa, G.; Zampa, N.

2014-12-01

The TwinMic spectromicroscope at Elettra is a multipurpose experimental station for full-field and scanning imaging modes and simultaneous acquisition of X-ray fluorescence. The actual LEXRF detection setup consists of eight single-cell Silicon Drift Detectors (SDD) in an annular configuration. Although they provide good performances in terms of both energy resolution and low-energy photon detection efficiency, they cover just about 4% of the whole photoemission solid angle. This is the main limitation of the present detection system, since large part of the emitted photons is lost and consequently a high acquisition time is required. In order to increase the solid angle, a new LEXRF detection system is being developed within a large collaboration of several institutes. The system, composed of 4 trapezoidal multi-cell silicon drift detectors, covers up to 40% of the photoemission hemisphere, so that this geometry provides a 10 times improvement over the present configuration. First measurements in the laboratory and on the TwinMic beamline have been performed in order to characterize a single trapezoidal detector, configured and controlled by means of two multichannel ASICs, which provide preamplification, shaping and peak-stretching, connected to acquisition electronics based on fast ADCs and FPGA and working under vacuum.

Silicon Hot-Electron Bolometers

NASA Technical Reports Server (NTRS)

Stevenson, Thomas R.; Hsieh, Wen-Ting; Mitchell, Robert R.; Isenberg, Hal D.; Stahle, Carl M.; Cao, Nga T.; Schneider, Gideon; Travers, Douglas E.; Moseley, S. Harvey; Wollack, Edward J.

2004-01-01

We discuss a new type of direct detector, a silicon hot-electron bolometer, for measurements in the far-infrared and submillimeter spectral ranges. High performance bolometers can be made using the electron-phonon conductance in heavily doped silicon to provide thermal isolation from the cryogenic bath. Noise performance is expected to be near thermodynamic limits, allowing background limited performance for many far infrared and submillimeter photometric and spectroscopic applications.

The AMS tracking detector for cosmic-ray physics in space

NASA Astrophysics Data System (ADS)

Bourquin, Maurice; AMS Tracker Collaboration

2005-04-01

AMS-02 is a general-purpose spectrometer designed to measure cosmic rays and gamma rays in near-Earth orbit. The main scientific motivations are the search for cosmic anti-matter, the search for dark matter, precision measurements on the relative abundance of different nuclei and isotopes, as well as the measurement of very high-energy gamma rays. Constructed by a large international collaboration of institutes from America, Asia and Europe, it will collect data on the International Space Station for a period of at least three years. In this contribution, I first identify the various detector requirements necessary to carry out this ambitious program. In particular, a large-area silicon microstrip detector inside a 0.8 T superconducting magnet is well suited to measure rigidity p/Z and specific energy loss d E/d x of cosmic rays, as well as the direction and energy of converted gamma rays. I review the advantage of such a silicon-tracking detector, taking into account the constraints of the space environment. The collaboration has gained extensive operating experience with double-sided silicon sensors in beam tests, and above all with AMS-01, a precursor spectrometer flown in the cargo bay of the Shuttle Discovery. During the entire 10-day STS-91 mission, the Silicon Tracker functioned without fault and with good spatial resolution. From the lessons learned with AMS-01, improvements were made to the design and assembly procedure of the 2500 sensors of AMS-02. As a result, the charge identification has been extended from Oxygen ( Z=8) to Iron ( Z=26). The physics reach of the new spectrometer is presented.

Wireless data transmission for high energy physics applications

NASA Astrophysics Data System (ADS)

Dittmeier, Sebastian; Brenner, Richard; Dancila, Dragos; Dehos, Cedric; De Lurgio, Patrick; Djurcic, Zelimir; Drake, Gary; Gonzalez Gimenez, Jose Luis; Gustafsson, Leif; Kim, Do-Won; Locci, Elizabeth; Pfeiffer, Ullrich; Röhrich, Dieter; Rydberg, Anders; Schöning, André; Siligaris, Alexandre; Soltveit, Hans Kristian; Ullaland, Kjetil; Vincent, Pierre; Rodriguez Vazquez, Pedro; Wiedner, Dirk; Yang, Shiming

2017-08-01

Silicon tracking detectors operated at high luminosity collider experiments pose a challenge for current and future readout systems regarding bandwidth, radiation, space and power constraints. With the latest developments in wireless communications, wireless readout systems might be an attractive alternative to commonly used wired optical and copper based readout architectures. The WADAPT group (Wireless Allowing Data and Power Transmission) has been formed to study the feasibility of wireless data transmission for future tracking detectors. These proceedings cover current developments focused on communication in the 60 GHz band. This frequency band offers a high bandwidth, a small form factor and an already mature technology. Motivation for wireless data transmission for high energy physics application and the developments towards a demonstrator prototype are summarized. Feasibility studies concerning the construction and operation of a wireless transceiver system have been performed. Data transmission tests with a transceiver prototype operating at even higher frequencies in the 240 GHz band are described. Data transmission at rates up to 10 Gb/s have been obtained successfully using binary phase shift keying.

MO-F-CAMPUS-T-05: Design of An Innovative Beam Monitor for Particle Therapy for the Simultaneous Measurement of Beam Fluence and Energy

DOE Office of Scientific and Technical Information (OSTI.GOV)

Sacchi, R; Guarachi, L Fanola; Monaco, V

2015-06-15

Purpose: Monitoring the prescribed dose in particle therapy is typically carried out by using parallel plate ionization chambers working in transmission mode. The use of gas detectors has several drawbacks: they need to be calibrated daily against standard dosimeters and their dependence on beam quality factors need to be fully characterized and controlled with high accuracy. A detector capable of single particle counting is proposed which would overcome all these limitations. Combined with a gas ionization chamber, it will allow determining the average particle stopping power, thus providing an effective method for the online verification of the selected particle energymore » and range. Methods: Low-Gain Avalanche Detectors (LGADs) are innovative n-in-p silicon sensors with moderate internal charge multiplication occurring in the strong field generated by an additional p+ doping layer implanted at a depth of a few µm in the bulk of the sensor. The increased signal-to-noise ratio allows designing very thin, few tens of microns, segmented LGADs, called Ultra Fast Silicon Detectors (UFSD), optimized for very fast signal, which would be suitable for charged particle counting at high rates. A prototype UFSD is being designed for this purpose. Results: Different LGAD diodes have been characterized both in laboratory and beam tests, and the results compared both with those obtained with similar diodes without the gain layer and with a program simulating the signal in the sensors. The signal is found to be enhanced in LGADs, while the leakage current and the noise is not affected by the gain. Possible alternative designs and implementations are also presented and discussed. Conclusion: Thanks to their excellent counting capabilities, UFSD detectors are a promising technology for future beam monitor devices in hadron-therapy applications. Studies are ongoing to better understand their properties and optimize the design in view of this application.« less

Large-area hexagonal silicon detectors for the CMS High Granularity Calorimeter

NASA Astrophysics Data System (ADS)

Pree, E.

2018-02-01

During the so-called Phase-2 Upgrade, the CMS experiment at CERN will undergo significant improvements to cope with the 10-fold luminosity increase of the High Luminosity LHC (HL-LHC) era. Especially the forward calorimetry will suffer from very high radiation levels and intensified pileup in the detectors. For this reason, the CMS collaboration is designing a High Granularity Calorimeter (HGCAL) to replace the existing endcap calorimeters. It features unprecedented transverse and longitudinal segmentation for both electromagnetic (CE-E) and hadronic (CE-H) compartments. The CE-E and a large fraction of CE-H will consist of a sandwich structure with silicon as active detector material. This paper presents an overview of the ongoing sensor development for the HGCAL and highlights important design features and measurement techniques. The design and layout of an 8-inch silicon sensor prototype is shown. The hexagonal sensors consist of 235 pads, each with an area of about 1 cm2. Furthermore, Synopsys TCAD simulations regarding the high voltage stability of the sensors for different geometric parameters are performed. Finally, two different IV characterisation methods are compared on the same sensor.

Dead layer on silicon p-i-n diode charged-particle detectors

DOE Office of Scientific and Technical Information (OSTI.GOV)

Wall, B. L.; Amsbaugh, John F.; Beglarian, A.

Abstract Semiconductor detectors in general have a dead layer at their surfaces that is either a result of natural or induced passivation, or is formed during the process of making a contact. Charged particles passing through this region produce ionization that is incompletely collected and recorded, which leads to departures from the ideal in both energy deposition and resolution. The silicon p-i-n diode used in the KATRIN neutrinomass experiment has such a dead layer. We have constructed a detailed Monte Carlo model for the passage of electrons from vacuum into a silicon detector, and compared the measured energy spectra tomore » the predicted ones for a range of energies from 12 to 20 keV. The comparison provides experimental evidence that a substantial fraction of the ionization produced in the "dead" layer evidently escapes by discussion, with 46% being collected in the depletion zone and the balance being neutralized at the contact or by bulk recombination. The most elementary model of a thinner dead layer from which no charge is collected is strongly disfavored.« less

Neutron spectrometry with a monolithic silicon telescope.

PubMed

Agosteo, S; D'Angelo, G; Fazzi, A; Para, A Foglio; Pola, A; Zotto, P

2007-01-01

A neutron spectrometer was set-up by coupling a polyethylene converter with a monolithic silicon telescope, consisting of a DeltaE and an E stage-detector (about 2 and 500 microm thick, respectively). The detection system was irradiated with monoenergetic neutrons at INFN-Laboratori Nazionali di Legnaro (Legnaro, Italy). The maximum detectable energy, imposed by the thickness of the E stage, is about 8 MeV for the present detector. The scatter plots of the energy deposited in the two stages were acquired using two independent electronic chains. The distributions of the recoil-protons are well-discriminated from those due to secondary electrons for energies above 0.350 MeV. The experimental spectra of the recoil-protons were compared with the results of Monte Carlo simulations using the FLUKA code. An analytical model that takes into account the geometrical structure of the silicon telescope was developed, validated and implemented in an unfolding code. The capability of reproducing continuous neutron spectra was investigated by irradiating the detector with neutrons from a thick beryllium target bombarded with protons. The measured spectra were compared with data taken from the literature. Satisfactory agreement was found.

Development and Testing of the AMEGO Silicon Tracker System

NASA Astrophysics Data System (ADS)

Griffin, Sean; Amego Team

2018-01-01

The All-sky Medium Energy Gamma-ray Observatory (AMEGO) is a probe-class mission in consideration for the 2020 decadal review designed to operate at energies from ˜ 200 keV to > 10 GeV. Operating a detector in this energy regime is challenging due to the crossover in the interaction cross-section for Compton scattering and pair production. AMEGO is made of four major subsystems: a plastic anticoincidence detector for rejecting cosmic-ray events, a silicon tracker for measuring the energies of Compton scattered electrons and pair-production products, a CZT calorimeter for measuring the energy and location of Compton scattered photons, and a CsI calorimeter for measuring the energy of the pair-production products at high energies. The tracker comprises layers of dual-sided silicon strip detectors which provide energy and localization information for Compton scattering and pair-production events. A prototype tracker system is under development at GSFC; in this contribution we provide details on the verification, packaging, and testing of the prototype tracker, as well as present plans for the development of the front-end electronics, beam tests, and a balloon flight.

Transparent silicon strip sensors for the optical alignment of particle detector systems

NASA Astrophysics Data System (ADS)

Blum, W.; Kroha, H.; Widmann, P.

1996-02-01

Modern large-area precision tracking detectors require increasing accuracy for the alignment of their components. A novel multi-point laser alignment system has been developed for such applications. The position of detector components with respect to reference laser beams is monitored by semi-transparent optical position sensors which work on the principle of silicon strip photodiodes. Two types of custom designed transparent strip sensors, based on crystalline and on amorphous silicon as active material, have been studied. The sensors are optimized for the typical diameters of collimated laser beams of 3-5 mm over distances of 10-20 m. They provide very high position resolution, on the order of 1 μm, uniformly over a wide measurement range of several centimeters. The preparation of the sensor surfaces requires special attention in order to achieve high light transmittance and minimum distortion of the traversing laser beams. At selected wavelengths, produced by laser diodes, transmission rates above 90% have been achieved. This allows to position more than 30 sensors along one laser beam. The sensors will be equipped with custom designed integrated readout electronics.

InAs/GaInSb strained layer superlattice as an infrared detector material: an overview

NASA Astrophysics Data System (ADS)

Johnson, Jeffrey L.

2000-04-01

The investigation of the InAs/Ga1-xInxSb strained layer superlattice (SLS) has been largely motivated by the promise of overcoming limitations of current mature high-performance IR detectors, such as those using HgCdTe and extrinsic silicon. It also offers fundamentally superior performance over other newly emerging III-V bandgap- engineered materials such as QWIPs. The inherent properties of the InAs/GaInSb SLS have identified it as an attractive alternative for niche VLWIR applications requiring high performance under low backgrounds at operating temperatures > 40K. If this material system proves to meet the stringent demands of VLWIR applications, it will most certainly play a significant role as an alternative materials for photovoltaic focal pane arrays operating in the LWIR and MWIR regimes as well. This paper is an overview of SLS technology development, and focuses on critical development needs as seen from the perspective of the IR detector industry.

The response of covered silicon detectors to monoenergetic gamma rays

NASA Technical Reports Server (NTRS)

Reier, M.

1972-01-01

Measurements were made of the efficiency in detecting gamma rays of a 0.3-mm, a 3-mm, and a 5-mm silicon detector covered with different absorbers. Calibrated sources covering the range from 279 KeV to 2.75 MeV were used. The need for the absorbers in order to obtain meaningful results, and their contribution to detector response at electron biases from 50 to 200 KeV, are discussed in detail. It is shown that the results are independent of the atomic number of the absorber. In addition, the role of the absorber in increasing the efficiency with increasing photon energy for low bias setting is demonstrated for the 0.3-mm crystal. Qualitative explanations are given for the shapes of all curves of efficiency versus energy at each bias.

Focal Plane Detectors for the Advanced Gamma-Ray Imaging System (AGIS)

NASA Astrophysics Data System (ADS)

Wagner, R. G.; Byrum, K.; Drake, G.; Funk, S.; Otte, N.; Smith, A.; Tajima, H.; Williams, D.

2009-05-01

The Advanced Gamma-Ray Imaging System (AGIS) is a concept for the next generation observatory in ground-based very high energy gamma-ray astronomy. It is being designed to achieve a significant improvement in sensitivity compared to current Imaging Air Cherenkov Telescope (IACT) Arrays. One of the main requirements in order that AGIS fulfills this goal will be to achieve higher angular resolution than current IACTs. Simulations show that a substantial improvement in angular resolution may be achieved if the pixel size is reduced to 0.05 deg, i.e. two to three times smaller than for current IACT cameras. Here we present results from testing of alternatives being considered for AGIS, including both silicon photomultipliers (SiPMs) and multi-anode photomultipliers (MAPMTs).

Multidirectional Cosmic Ray Ion Detector for Deep Space CubeSats

NASA Technical Reports Server (NTRS)

Wrbanek, John D.; Wrbanek, Susan Y.

2016-01-01

Understanding the nature of anisotropy of solar energetic protons (SEPs) and galactic cosmic ray (GCR) fluxes in the interplanetary medium is crucial in characterizing time-dependent radiation exposure in interplanetary space for future exploration missions. NASA Glenn Research Center has proposed a CubeSat-based instrument to study solar and cosmic ray ions in lunar orbit or deep space. The objective of Solar Proton Anisotropy and Galactic cosmic ray High Energy Transport Instrument (SPAGHETI) is to provide multi-directional ion data to further understand anisotropies in SEP and GCR flux. The instrument is to be developed using large area detectors fabricated from high density, high purity silicon carbide (SiC) to measure linear energy transfer (LET) of ions. Stacks of these LET detectors are arranged in a CubeSat at orthogonal directions to provide multidirectional measurements. The low-noise, thermally-stable nature of silicon carbide and its radiation tolerance allows the multidirectional array of detector stacks to be packed in a 6U CubeSat without active cooling. A concept involving additional coincidence/anticoincidence detectors and a high energy Cherenkov detector is possible to further expand ion energy range and sensitivity.

Monolithic CMOS imaging x-ray spectrometers

NASA Astrophysics Data System (ADS)

Kenter, Almus; Kraft, Ralph; Gauron, Thomas; Murray, Stephen S.

2014-07-01

The Smithsonian Astrophysical Observatory (SAO) in collaboration with SRI/Sarnoff is developing monolithic CMOS detectors optimized for x-ray astronomy. The goal of this multi-year program is to produce CMOS x-ray imaging spectrometers that are Fano noise limited over the 0.1-10keV energy band while incorporating the many benefits of CMOS technology. These benefits include: low power consumption, radiation "hardness", high levels of integration, and very high read rates. Small format test devices from a previous wafer fabrication run (2011-2012) have recently been back-thinned and tested for response below 1keV. These devices perform as expected in regards to dark current, read noise, spectral response and Quantum Efficiency (QE). We demonstrate that running these devices at rates ~> 1Mpix/second eliminates the need for cooling as shot noise from any dark current is greatly mitigated. The test devices were fabricated on 15μm, high resistivity custom (~30kΩ-cm) epitaxial silicon and have a 16 by 192 pixel format. They incorporate 16μm pitch, 6 Transistor Pinned Photo Diode (6TPPD) pixels which have ~40μV/electron sensitivity and a highly parallel analog CDS signal chain. Newer, improved, lower noise detectors have just been fabricated (October 2013). These new detectors are fabricated on 9μm epitaxial silicon and have a 1k by 1k format. They incorporate similar 16μm pitch, 6TPPD pixels but have ~ 50% higher sensitivity and much (3×) lower read noise. These new detectors have undergone preliminary testing for functionality in Front Illuminated (FI) form and are presently being prepared for back thinning and packaging. Monolithic CMOS devices such as these, would be ideal candidate detectors for the focal planes of Solar, planetary and other space-borne x-ray astronomy missions. The high through-put, low noise and excellent low energy response, provide high dynamic range and good time resolution; bright, time varying x-ray features could be temporally and spectrally resolved without saturation. We present details of our camera design and device performance with particular emphasis on those aspects of interest to single photon counting x-ray astronomy. These features include read noise, x-ray spectral response and quantum efficiency. Funding for this work has been provided in large part by NASA Grant NNX09AE86G and a grant from the Betty and Gordon Moore Foundation.

High-efficiency UV/optical/NIR detectors for large aperture telescopes and UV explorer missions: development of and field observations with delta-doped arrays

NASA Astrophysics Data System (ADS)

Nikzad, Shouleh; Jewell, April D.; Hoenk, Michael E.; Jones, Todd J.; Hennessy, John; Goodsall, Tim; Carver, Alexander G.; Shapiro, Charles; Cheng, Samuel R.; Hamden, Erika T.; Kyne, Gillian; Martin, D. Christopher; Schiminovich, David; Scowen, Paul; France, Kevin; McCandliss, Stephan; Lupu, Roxana E.

2017-07-01

Exciting concepts are under development for flagship, probe class, explorer class, and suborbital class NASA missions in the ultraviolet/optical spectral range. These missions will depend on high-performance silicon detector arrays being delivered affordably and in high numbers. To that end, we have advanced delta-doping technology to high-throughput and high-yield wafer-scale processing, encompassing a multitude of state-of-the-art silicon-based detector formats and designs. We have embarked on a number of field observations, instrument integrations, and independent evaluations of delta-doped arrays. We present recent data and innovations from JPL's Advanced Detectors and Systems Program, including two-dimensional doping technology, JPL's end-to-end postfabrication processing of high-performance UV/optical/NIR arrays and advanced coatings for detectors. While this paper is primarily intended to provide an overview of past work, developments are identified and discussed throughout. Additionally, we present examples of past, in-progress, and planned observations and deployments of delta-doped arrays.

The ATLAS Inner Detector commissioning and calibration

DOE PAGES

Aad, G.; Abbott, B.; Abdallah, J.; ...

2010-08-20

The ATLAS Inner Detector is a composite tracking system consisting of silicon pixels, silicon strips and straw tubes in a 2 T magnetic field. Its installation was completed in August 2008 and the detector took part in data-taking with single LHC beams and cosmic rays. The initial detector operation, hardware commissioning and in-situ calibrations are described. Tracking performance has been measured with 7. 6 million cosmic-ray events, collected using a tracking trigger and reconstructed with modular pattern-recognition and fitting software. The intrinsic hit efficiency and tracking trigger efficiencies are close to 100%. Lorentz angle measurements for both electrons and holes,more » specific energy-loss calibration and transition radiation turn-on measurements have been performed. Different alignment techniques have been used to reconstruct the detector geometry. After the initial alignment, a transverse impact parameter resolution of 22.1±0.9 μm and a relative momentum resolution σ p/p=(4. 83 ± 0.16)×10 -4 GeV -1×p T have been measured for high momentum tracks.« less

Investigation of Self Triggered Cosmic Ray Detectors using Silicon Photomultiplier

NASA Astrophysics Data System (ADS)

Knox, Adrian; Niduaza, Rommel; Hernandez, Victor; Ruiz, Daniel; Ramos, Daniel; Fan, Sewan; Fatuzzo, Laura; Ritt, Stefan

2015-04-01

The silicon photomultiplier (SiPM) is a highly sensitive light detector capable of measuring single photons. It costs a fraction of the photomultiplier tube and operates slightly above the breakdown voltage. At this conference we describe our investigation of SiPM, the multipixel photon counters (MPPC) from Hamamatsu as readout detectors for plastic scintillators working for detecting cosmic ray particles. Our setup consists of scintillator sheets embedded with blue to green wavelength shifting fibers optically coupled to MPPCs to detect scintillating light. Four detector assemblies would be constructed and arranged to work in self triggered mode. Using custom matching tee boxes, the amplified MPPC signals are fed to discriminators with threshold set to give a reasonable coincidence count rate. Moreover, the detector waveforms are digitized using a 5 Giga Samples per second waveform digitizer, the DRS4, and triggered with the coincidence logic to capture the MPPC waveforms. Offline analysis of the digitized waveforms is accomplished using the CERN package PAW and results of our experiments and the data analysis would also be discussed. US Department of Education Title V Grant Number PO31S090007.

Calibration of modified Liulin detector for cosmic radiation measurements on-board aircraft.

PubMed

Kyselová, D; Ambrožová, I; Krist, P; Kubančák, J; Uchihori, Y; Kitamura, H; Ploc, O

2015-06-01

The annual effective doses of aircrew members often exceed the limit of 1 mSv for the public due to the increased level of cosmic radiation at the flight altitudes, and thus, it is recommended to monitor them. Aircrew dosimetry is usually performed using special computer programs mostly based on results of Monte Carlo simulations. Contemporary, detectors are used mostly for validation of these computer codes, verification of effective dose calculations and for research purposes. One of such detectors is active silicon semiconductor deposited energy spectrometer Liulin. Output quantities of measurement with the Liulin detector are the absorbed dose in silicon D and the ambient dose equivalent H*(10); to determine it, two calibrations are necessary. The purpose of this work was to develop a calibration methodology that can be used to convert signal from the detector to D independently on calibration performed at Heavy Ion Medical Accelerator facility in Chiba, Japan. © The Author 2015. Published by Oxford University Press. All rights reserved. For Permissions, please email: journals.permissions@oup.com.

Waveform digitization for high resolution timing detectors with silicon photomultipliers

DOE Office of Scientific and Technical Information (OSTI.GOV)

Ronzhin, A.; Albrow, M. G.; Los, S.

2012-03-01

The results of time resolution studies with silicon photomultipliers (SiPMs) read out with high bandwidth constant fraction discrimination electronics were presented earlier [1-3]. Here we describe the application of fast waveform digitization readout based on the DRS4 chip [4], a switched capacitor array (SCA) produced by the Paul Scherrer Institute, to further our goal of developing high time resolution detectors based on SiPMs. The influence of the SiPM signal shape on the time resolution was investigated. Different algorithms to obtain the best time resolution are described, and test beam results are presented.

Sub-micron resolution of localized ion beam induced charge reduction in silicon detectors damaged by heavy ions

DOE PAGES

Auden, Elizabeth C.; Pacheco, Jose L.; Bielejec, Edward; ...

2015-12-01

In this study, displacement damage reduces ion beam induced charge (IBIC) through Shockley-Read-Hall recombination. Closely spaced pulses of 200 keV Si ++ ions focused in a 40 nm beam spot are used to create damage cascades within 0.25 μm 2 areas. Damaged areas are detected through contrast in IBIC signals generated with focused ion beams of 200 keV Si ++ ions and 60 keV Li + ions. IBIC signal reduction can be resolved over sub-micron regions of a silicon detector damaged by as few as 1000 heavy ions.

Sub-micron resolution of localized ion beam induced charge reduction in silicon detectors damaged by heavy ions

DOE Office of Scientific and Technical Information (OSTI.GOV)

Auden, Elizabeth C.; Pacheco, Jose L.; Bielejec, Edward

In this study, displacement damage reduces ion beam induced charge (IBIC) through Shockley-Read-Hall recombination. Closely spaced pulses of 200 keV Si ++ ions focused in a 40 nm beam spot are used to create damage cascades within 0.25 μm 2 areas. Damaged areas are detected through contrast in IBIC signals generated with focused ion beams of 200 keV Si ++ ions and 60 keV Li + ions. IBIC signal reduction can be resolved over sub-micron regions of a silicon detector damaged by as few as 1000 heavy ions.

The Dosepix detector—an energy-resolving photon-counting pixel detector for spectrometric measurements

NASA Astrophysics Data System (ADS)

Zang, A.; Anton, G.; Ballabriga, R.; Bisello, F.; Campbell, M.; Celi, J. C.; Fauler, A.; Fiederle, M.; Jensch, M.; Kochanski, N.; Llopart, X.; Michel, N.; Mollenhauer, U.; Ritter, I.; Tennert, F.; Wölfel, S.; Wong, W.; Michel, T.

2015-04-01

The Dosepix detector is a hybrid photon-counting pixel detector based on ideas of the Medipix and Timepix detector family. 1 mm thick cadmium telluride and 300 μm thick silicon were used as sensor material. The pixel matrix of the Dosepix consists of 16 x 16 square pixels with 12 rows of (200 μm)2 and 4 rows of (55 μm)2 sensitive area for the silicon sensor layer and 16 rows of pixels with 220 μm pixel pitch for CdTe. Besides digital energy integration and photon-counting mode, a novel concept of energy binning is included in the pixel electronics, allowing energy-resolved measurements in 16 energy bins within one acquisition. The possibilities of this detector concept range from applications in personal dosimetry and energy-resolved imaging to quality assurance of medical X-ray sources by analysis of the emitted photon spectrum. In this contribution the Dosepix detector, its response to X-rays as well as spectrum measurements with Si and CdTe sensor layer are presented. Furthermore, a first evaluation was carried out to use the Dosepix detector as a kVp-meter, that means to determine the applied acceleration voltage from measured X-ray tubes spectra.

A radiation detector design mitigating problems related to sawed edges

NASA Astrophysics Data System (ADS)

Aurola, A.; Marochkin, V.; Tuuva, T.

2014-12-01

In pixelated silicon radiation detectors that are utilized for the detection of UV, visible, and in particular Near Infra-Red (NIR) light it is desirable to utilize a relatively thick fully depleted Back-Side Illuminated (BSI) detector design providing 100% Fill Factor (FF), low Cross-Talk (CT), and high Quantum Efficiency (QE). The optimal thickness of such detectors is typically less than 300μm and above 40μm and thus it is more or less mandatory to thin the detector wafer from the backside after the front side of the detector has been processed and before a conductive layer is formed on the backside. A TAIKO thinning process is optimal for such a thickness range since neither a support substrate on the front side nor lithographic steps on the backside are required. The conductive backside layer should, however, be homogenous throughout the wafer and it should be biased from the front side of the detector. In order to provide good QE for blue and UV light the conductive backside layer should be of opposite doping type than the substrate. The problem with a homogeneous backside layer being of opposite doping type than the substrate is that a lot of leakage current is typically generated at the sawed chip edges, which may increase the dark noise and the power consumption. These problems are substantially mitigated with a proposed detector edge arrangement which 2D simulation results are presented in this paper.

Enhancing the far-UV sensitivity of silicon CMOS imaging arrays

NASA Astrophysics Data System (ADS)

Retherford, K. D.; Bai, Yibin; Ryu, Kevin K.; Gregory, J. A.; Welander, Paul B.; Davis, Michael W.; Greathouse, Thomas K.; Winter, Gregory S.; Suntharalingam, Vyshnavi; Beletic, James W.

2014-07-01

We report our progress toward optimizing backside-illuminated silicon PIN CMOS devices developed by Teledyne Imaging Sensors (TIS) for far-UV planetary science applications. This project was motivated by initial measurements at Southwest Research Institute (SwRI) of the far-UV responsivity of backside-illuminated silicon PIN photodiode test structures described in Bai et al., SPIE, 2008, which revealed a promising QE in the 100-200 nm range as reported in Davis et al., SPIE, 2012. Our effort to advance the capabilities of thinned silicon wafers capitalizes on recent innovations in molecular beam epitaxy (MBE) doping processes. Key achievements to date include: 1) Representative silicon test wafers were fabricated by TIS, and set up for MBE processing at MIT Lincoln Laboratory (LL); 2) Preliminary far-UV detector QE simulation runs were completed to aid MBE layer design; 3) Detector fabrication was completed through the pre-MBE step; and 4) Initial testing of the MBE doping process was performed on monitoring wafers, with detailed quality assessments. Early results suggest that potential challenges in optimizing the UV-sensitivity of silicon PIN type CMOS devices, compared with similar UV enhancement methods established for CCDs, have been mitigated through our newly developed methods. We will discuss the potential advantages of our approach and briefly describe future development steps.

Efficient scalable solid-state neutron detector.

PubMed

Moses, Daniel

2015-06-01

We report on scalable solid-state neutron detector system that is specifically designed to yield high thermal neutron detection sensitivity. The basic detector unit in this system is made of a (6)Li foil coupled to two crystalline silicon diodes. The theoretical intrinsic efficiency of a detector-unit is 23.8% and that of detector element comprising a stack of five detector-units is 60%. Based on the measured performance of this detector-unit, the performance of a detector system comprising a planar array of detector elements, scaled to encompass effective area of 0.43 m(2), is estimated to yield the minimum absolute efficiency required of radiological portal monitors used in homeland security.

Applications of a pnCCD detector coupled to columnar structure CsI(Tl) scintillator system in ultra high energy X-ray Laue diffraction

NASA Astrophysics Data System (ADS)

Shokr, M.; Schlosser, D.; Abboud, A.; Algashi, A.; Tosson, A.; Conka, T.; Hartmann, R.; Klaus, M.; Genzel, C.; Strüder, L.; Pietsch, U.

2017-12-01

Most charge coupled devices (CCDs) are made of silicon (Si) with typical active layer thicknesses of several microns. In case of a pnCCD detector the sensitive Si thickness is 450 μm. However, for silicon based detectors the quantum efficiency for hard X-rays drops significantly for photon energies above 10 keV . This drawback can be overcome by combining a pixelated silicon-based detector system with a columnar scintillator. Here we report on the characterization of a low noise, fully depleted 128×128 pixels pnCCD detector with 75×75 μm2 pixel size coupled to a 700 μm thick columnar CsI(Tl) scintillator in the photon range between 1 keV to 130 keV . The excellent performance of the detection system in the hard X-ray range is demonstrated in a Laue type X-ray diffraction experiment performed at EDDI beamline of the BESSY II synchrotron taken at a set of several GaAs single crystals irradiated by white synchrotron radiation. With the columnar structure of the scintillator, the position resolution of the whole system reaches a value of less than one pixel. Using the presented detector system and considering the functional relation between indirect and direct photon events Laue diffraction peaks with X-ray energies up to 120 keV were efficiently detected. As one of possible applications of the combined CsI-pnCCD system we demonstrate that the accuracy of X-ray structure factors extracted from Laue diffraction peaks can be significantly improved in hard X-ray range using the combined CsI(Tl)-pnCCD system compared to a bare pnCCD.

Intelligent Front-end Electronics for Silicon photodetectors (IFES)

NASA Astrophysics Data System (ADS)

Sauerzopf, Clemens; Gruber, Lukas; Suzuki, Ken; Zmeskal, Johann; Widmann, Eberhard

2016-05-01

While high channel density can be easily achieved for big experiments using custom made microchips, providing something similar for small and medium size experiments imposes a challenge. Within this work we describe a novel and cost effective solution to operate silicon photodetectors such as silicon photo multipliers (SiPM). The IFES modules provide the bias voltage for the detectors, a leading edge discriminator featuring time over threshold and a differential amplifier, all on one printed circuit board. We demonstrate under realistic conditions that the module is usable for high resolution timing measurements exploiting both charge and time information. Furthermore we show that the modules can be easily used in larger detector arrays. All in all this confirms that the IFES modules are a viable option for a broad range of experiments if cost-effectiveness and small form factor are required.

A strained silicon cold electron bolometer using Schottky contacts

NASA Astrophysics Data System (ADS)

Brien, T. L. R.; Ade, P. A. R.; Barry, P. S.; Dunscombe, C.; Leadley, D. R.; Morozov, D. V.; Myronov, M.; Parker, E. H. C.; Prest, M. J.; Prunnila, M.; Sudiwala, R. V.; Whall, T. E.; Mauskopf, P. D.

2014-07-01

We describe optical characterisation of a strained silicon cold electron bolometer (CEB), operating on a 350 mK stage, designed for absorption of millimetre-wave radiation. The silicon cold electron bolometer utilises Schottky contacts between a superconductor and an n++ doped silicon island to detect changes in the temperature of the charge carriers in the silicon, due to variations in absorbed radiation. By using strained silicon as the absorber, we decrease the electron-phonon coupling in the device and increase the responsivity to incoming power. The strained silicon absorber is coupled to a planar aluminium twin-slot antenna designed to couple to 160 GHz and that serves as the superconducting contacts. From the measured optical responsivity and spectral response, we calculate a maximum optical efficiency of 50% for radiation coupled into the device by the planar antenna and an overall noise equivalent power, referred to absorbed optical power, of 1.1×10-16 W Hz-1/2 when the detector is observing a 300 K source through a 4 K throughput limiting aperture. Even though this optical system is not optimized, we measure a system noise equivalent temperature difference of 6 mK Hz-1/2. We measure the noise of the device using a cross-correlation of time stream data, measured simultaneously with two junction field-effect transistor amplifiers, with a base correlated noise level of 300 pV Hz-1/2 and find that the total noise is consistent with a combination of photon noise, current shot noise, and electron-phonon thermal noise.

Comparison between Silicon-Carbide and diamond for fast neutron detection at room temperature

NASA Astrophysics Data System (ADS)

Obraztsova, O.; Ottaviani, L.; Klix, A.; Döring, T.; Palais, O.; Lyoussi, A.

2018-01-01

Neutron radiation detector for nuclear reactor applications plays an important role in getting information about the actual neutron yield and reactor environment. Such detector must be able to operate at high temperature (up to 600° C) and high neutron flux levels. It is worth nothing that a detector for industrial environment applications must have fast and stable response over considerable long period of use as well as high energy resolution. Silicon Carbide is one of the most attractive materials for neutron detection. Thanks to its outstanding properties, such as high displacement threshold energy (20-35 eV), wide band gap energy (3.27 eV) and high thermal conductivity (4.9 W/cm·K), SiC can operate in harsh environment (high temperature, high pressure and high radiation level) without additional cooling system. Our previous analyses reveal that SiC detectors, under irradiation and at elevated temperature, respond to neutrons showing consistent counting rates as function of external reverse bias voltages and radiation intensity. The counting-rate of the thermal neutron-induced peak increases with the area of the detector, and appears to be linear with respect to the reactor power. Diamond is another semi-conductor considered as one of most promising materials for radiation detection. Diamond possesses several advantages in comparison to other semiconductors such as a wider band gap (5.5 eV), higher threshold displacement energy (40-50 eV) and thermal conductivity (22 W/cm·K), which leads to low leakage current values and make it more radiation resistant that its competitors. A comparison is proposed between these two semiconductors for the ability and efficiency to detect fast neutrons. For this purpose the deuterium-tritium neutron generator of Technical University of Dresden with 14 MeV neutron output of 1010 n·s-1 is used. In the present work, we interpret the first measurements and results with both 4H-SiC and chemical vapor deposition (CVD) diamond detectors irradiated with 14 MeV neutrons at room temperature.

Technology Development for Cosmic Microwave Background Cosmology

NASA Astrophysics Data System (ADS)

Munson, Charles D.

The Cosmic Microwave Background (CMB) offers a unique window into the early universe by probing thermal radiation remaining from the big bang. Due to its low temperature and bright foregrounds, its thorough characterization requires technological advancement beyond the current state-of-the-art. In this thesis, I present the development and fabrication of novel metamaterial silicon optics to improve the sensitivity of current and future CMB telescopes. By machining subwavelength features into the silicon surfaces, traditional antireflection coatings can be replaced by all-silicon metamaterials that significantly reduce reflections over previous approaches. I discuss the design of these structured surfaces and the design and construction of a sophisticated fabrication facility necessary to implement this technology on large diameter (30+ cm) lenses for the Atacama Cosmology Telescope Polarization project (ACTPol). I then apply this metamaterial technology to the development of improved free-space filters for millimeter and sub-millimeter wavelength imaging (focusing specifically on blocking infrared radiation, necessary for current cryogenic detector systems). This produces a highly effective infrared-blocking filter, blocking over 99% of the incident power from a 300 K blackbody while maintaining transmission of better than 99% in a target CMB observing band (between 70 and 170 GHz). I conclude with a discussion of the development of a real-space simulation framework to assist in better understanding current CMB results and forecasting for future experiments. By taking a CMB realization and adding to it accurate real-space modeling of the Sunyaev-Zel'dovich effect and weak lensing distortions (introduced by galaxy clusters), a better understanding of the impacts of large scale structure on the CMB can be obtained.

Technology Development for Cosmic Microwave Background Cosmology

NASA Astrophysics Data System (ADS)

Munson, Charles D.

2017-05-01

The Cosmic Microwave Background (CMB) offers a unique window into the early universe by probing thermal radiation remaining from the big bang. Due to its low temperature and bright foregrounds, its thorough characterization requires technological advancement beyond the current state-of-the-art. In this thesis, I present the development and fabrication of novel metamaterial silicon optics to improve the sensitivity of current and future CMB telescopes. By machining subwavelength features into the silicon surfaces, traditional antireflection coatings can be replaced by all-silicon metamaterials that significantly reduce reflections over previous approaches. I discuss the design of these structured surfaces and the design and construction of a sophisticated fabrication facility necessary to implement this technology on large diameter (30+ cm) lenses for the Atacama Cosmology Telescope Polarization project (ACTPol). I then apply this metamaterial technology to the development of improved free-space filters for millimeter and sub-millimeter wavelength imaging (focusing specifically on blocking infrared radiation, necessary for current cryogenic detector systems). This produces a highly effective infrared-blocking filter, blocking over 99% of the incident power from a 300 K blackbody while maintaining transmission of better than 99% in a target CMB observing band (between 70 and 170 GHz). I conclude with a discussion of the development of a real-space simulation framework to assist in better understanding current CMB results and forecasting for future experiments. By taking a CMB realization and adding to it accurate real-space modeling of the Sunyaev-Zel'dovich effect and weak lensing distortions (introduced by galaxy clusters), a better understanding of the impacts of large scale structure on the CMB can be obtained.

Fission-fragment detector for DANCE based on thin scintillating films

NASA Astrophysics Data System (ADS)

Rusev, G.; Roman, A. R.; Daum, J. K.; Springs, R. K.; Bond, E. M.; Jandel, M.; Baramsai, B.; Bredeweg, T. A.; Couture, A.; Favalli, A.; Ianakiev, K. D.; Iliev, M. L.; Mosby, S.; Ullmann, J. L.; Walker, C. L.

2015-12-01

A fission-fragment detector based on thin scintillating films has been built to serve as a trigger/veto detector in neutron-induced fission measurements at DANCE. The fissile material is surrounded by scintillating films providing 4 π detection of the fission fragments. The scintillation photons were registered with silicon photomultipliers. A measurement of the 235U (n , f) reaction with this detector at DANCE revealed a correct time-of-flight spectrum and provided an estimate for the efficiency of the prototype detector of 11.6(7)%. Design and test measurements with the detector are described.