Pyroelectric detector arrays

NASA Technical Reports Server (NTRS)

Fripp, A. L.; Robertson, J. B.; Breckenridge, R. A. (Inventor)

1982-01-01

A pryoelectric detector array and the method for making it are described. A series of holes formed through a silicon dioxide layer on the surface of a silicon substrate forms the mounting fixture for the pyroelectric detector array. A series of nontouching strips of indium are formed around the holes to make contact with the backside electrodes and form the output terminals for individual detectors. A pyroelectric detector strip with front and back electrodes, respectively, is mounted over the strip. Biasing resistors are formed on the surface of the silicon dioxide layer and connected to the strips. A metallized pad formed on the surface of the layer is connected to each of the biasing resistors and to the film to provide the ground for the pyroelectric detector array.

Pyroelectric detector arrays

NASA Technical Reports Server (NTRS)

Fripp, A. L.; Robertson, J. B.; Breckenridge, R. (Inventor)

1982-01-01

A pyroelectric detector array and the method for using it are described. A series of holes formed through a silicon dioxide layer on the surface of a silicon substrate forms the mounting fixture for the pyroelectric detector array. A series of nontouching strips of indium are formed around the holes to make contact with the backside electrodes and form the output terminals for individual detectors. A pyroelectric detector strip with front and back electrodes, respectively, is mounted over the strips. Biasing resistors are formed on the surface of the silicon dioxide layer and connected to the strips. A metallized pad formed on the surface of layer is connected to each of the biasing resistors and to the film to provide the ground for the pyroelectric detector array.

Characterization of zinc oxide thin film for pH detector

NASA Astrophysics Data System (ADS)

Hashim, Uda; Fathil, M. F. M.; Arshad, M. K. Md; Gopinath, Subash C. B.; Uda, M. N. A.

2017-03-01

This paper presents the fabrication process of the zinc oxide thin films for using to act as pH detection by using different PH solution. Sol-gel solution technique is used for preparing zinc oxide seed solution, followed by metal oxide deposition process by using spin coater on the silicon dioxide. Silicon dioxide layer is grown on the silicon wafer, then, ZnO seed solution is deposited on the silicon layer, baked, and annealing process carried on to undergo the characterization of its surface morphology, structural and crystalline phase. Electrical characterization is showed by using PH 4, 7, and 10 is dropped on the surface of the die, in addition, APTES solution is used as linker and also as a references of the electrical characterization.

HOLE-BLOCKING LAYERS FOR SILICON/ORGANIC HETEROJUNCTIONS: A NEW CLASS OF HIGH-EFFICIENCY LOW-COST PV

DOE Office of Scientific and Technical Information (OSTI.GOV)

Sturm, James

This project is the first investigation of the use of thin titanium dioxide layers on silicon as a hole-blocking / electron-transparent selective contact to silicon. The work was motivated by the goal of a high-efficiency low-cost silicon-based solar cells that could be processed entirely at low temperature (300 Degree Celsius) or less, without requiring plasma-processing.

Tunable Bragg filters with a phase transition material defect layer

DOE PAGES

Wang, Xi; Gong, Zilun; Dong, Kaichen; ...

2016-01-01

We propose an all-solid-state tunable Bragg filter with a phase transition material as the defect layer. Bragg filters based on a vanadium dioxide defect layer sandwiched between silicon dioxide/titanium dioxide Bragg gratings are experimentally demonstrated. Temperature dependent reflection spectroscopy shows the dynamic tunability and hysteresis properties of the Bragg filter. Temperature dependent Raman spectroscopy reveals the connection between the tunability and the phase transition of the vanadium dioxide defect layer. This work paves a new avenue in tunable Bragg filter designs and promises more applications by combining phase transition materials and optical cavities.

Tunable Bragg filters with a phase transition material defect layer

DOE Office of Scientific and Technical Information (OSTI.GOV)

Wang, Xi; Gong, Zilun; Dong, Kaichen

We propose an all-solid-state tunable Bragg filter with a phase transition material as the defect layer. Bragg filters based on a vanadium dioxide defect layer sandwiched between silicon dioxide/titanium dioxide Bragg gratings are experimentally demonstrated. Temperature dependent reflection spectroscopy shows the dynamic tunability and hysteresis properties of the Bragg filter. Temperature dependent Raman spectroscopy reveals the connection between the tunability and the phase transition of the vanadium dioxide defect layer. This work paves a new avenue in tunable Bragg filter designs and promises more applications by combining phase transition materials and optical cavities.

Formation of porous silicon oxide from substrate-bound silicon rich silicon oxide layers by continuous-wave laser irradiation

NASA Astrophysics Data System (ADS)

Wang, Nan; Fricke-Begemann, Th.; Peretzki, P.; Ihlemann, J.; Seibt, M.

2018-03-01

Silicon nanocrystals embedded in silicon oxide that show room temperature photoluminescence (PL) have great potential in silicon light emission applications. Nanocrystalline silicon particle formation by laser irradiation has the unique advantage of spatially controlled heating, which is compatible with modern silicon micro-fabrication technology. In this paper, we employ continuous wave laser irradiation to decompose substrate-bound silicon-rich silicon oxide films into crystalline silicon particles and silicon dioxide. The resulting microstructure is studied using transmission electron microscopy techniques with considerable emphasis on the formation and properties of laser damaged regions which typically quench room temperature PL from the nanoparticles. It is shown that such regions consist of an amorphous matrix with a composition similar to silicon dioxide which contains some nanometric silicon particles in addition to pores. A mechanism referred to as "selective silicon ablation" is proposed which consistently explains the experimental observations. Implications for the damage-free laser decomposition of silicon-rich silicon oxides and also for controlled production of porous silicon dioxide films are discussed.

Research on silicon microchannel array oxidation insulation technology and stress issues

NASA Astrophysics Data System (ADS)

Chai, Jin; Li, Mo; Liang, Yong-zhao; Yang, Ji-kai; Wang, Guo-zheng; Duanmu, Qing-duo

2013-08-01

Microchannel plate is widely used in the field of low light level night vision, photomultiplier, tubes, X-ray enhancer and so on. In order to meet the requirement of microchannel plate electron multiplier, we used the method of thermal oxidation to produce a thin film of silicon dioxide which could play a role in electric insulation. Silicon dioxide film has a high breakdown voltage, it can satisfy the high breakdown voltage requirements of electron multiplier. We should find the reasonable parameter values and preparation process in the oxidation so that the thickness and uniformity of the silicon dioxide layer would meet requirement. This article has been focused on researching and analyzing of the problem of oxide insulation and thermal stress in the process of production of silicon dioxide film. In this experiment, dry oxygen and wet oxygen were carried out respectively for 8 hours. The thickness of dry oxygen silicon dioxide films was 458 nm and wet oxygen silicon dioxide films was 1.4 μm. Under these conditions, the silicon microchannel is uniformity and neat, meanwhile the insulating layer's breakdown voltage was measured at 450 V after the wet oxygen oxidation. By using ANSYS finite element software, we analyze the thermal stress, which came from the microchannel oxygen processes, under the conditions of which ambient temperature was 27 ℃ and porosity was 64%, we simulated the thermal stress in the temperature of 1200 ℃ and 1000 ℃, finally we got the maximum equivalent thermal stress of 472 MPa and 403 MPa respectively. The higher thermal stress area was spread over Si-SiO2 interface, by simulate conditions 50% porosity silicon microchannel sample was selected for simulation analysis at 1100 ℃, we got the maximum equivalent thermal stress of 472 MPa, Thermal stress is the minimum value of 410 MPa.

Memory device using movement of protons

DOEpatents

Warren, William L.; Vanheusden, Karel J. R.; Fleetwood, Daniel M.; Devine, Roderick A. B.; Archer, Leo B.; Brown, George A.; Wallace, Robert M.

2000-01-01

An enhancement of an electrically written memory element utilizing the motion of protons within a dielectric layer surrounded by layers on either side to confine the protons within the dielectric layer with electrode means attached to the surrounding layers to change the spatial position of the protons within the dielectric layer. The device is preferably constructed as a silicon-silicon dioxide-silicon layered structure with the protons being introduced to the structure during an anneal in an atmosphere containing hydrogen gas. Device operation is enhanced by concluding this anneal step with a sudden cooling. The device operates at low power, is preferably nonvolatile, is radiation tolerant, and is compatible with convention silicon MOS processing for integration with other microelectronics elements on the same silicon substrate.

Prediction and Measurement of Temperature Fields in Silicon-on-Insulator Electronic Circuits

DTIC Science & Technology

1995-08-01

common dimensions are given in Table 1. Almost all of the device power is dissipated in the channel. The electri- cally insulating implanted layer...data. Region or Component substrate Material SOI implanted insulating layers single-crystal silicon, 3 x 1015 boron atoms cm -3 Thermal... implanted silicon-dioxide layer in SOI wafers. The data for each device for varying powers fall near a line originating at P = 0 and T0 = 303 K

Laser-induced amorphization of silicon during pulsed-laser irradiation of TiN/Ti/polycrystalline silicon/SiO2/silicon

NASA Astrophysics Data System (ADS)

Chong, Y. F.; Pey, K. L.; Wee, A. T. S.; Thompson, M. O.; Tung, C. H.; See, A.

2002-11-01

In this letter, we report on the complex solidification structures formed during laser irradiation of a titanium nitride/titanium/polycrystalline silicon/silicon dioxide/silicon film stack. Due to enhanced optical coupling, the titanium nitride/titanium capping layer increases the melt depth of polycrystalline silicon by more than a factor of 2. It is found that the titanium atoms diffuse through the entire polycrystalline silicon layer during irradiation. Contrary to the expected polycrystalline silicon growth, distinct regions of polycrystalline and amorphous silicon are formed instead. Possible mechanisms for the formation of these microstructures are proposed.

Porous silicon carbide (SiC) semiconductor device

NASA Technical Reports Server (NTRS)

Shor, Joseph S. (Inventor); Kurtz, Anthony D. (Inventor)

1994-01-01

A semiconductor device employs at least one layer of semiconducting porous silicon carbide (SiC). The porous SiC layer has a monocrystalline structure wherein the pore sizes, shapes, and spacing are determined by the processing conditions. In one embodiment, the semiconductor device is a p-n junction diode in which a layer of n-type SiC is positioned on a p-type layer of SiC, with the p-type layer positioned on a layer of silicon dioxide. Because of the UV luminescent properties of the semiconducting porous SiC layer, it may also be utilized for other devices such as LEDs and optoelectronic devices.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Bolotov, V. V.; Knyazev, E. V.; Ponomareva, I. V.

The oxidation of mesoporous silicon in a double-layer “macroporous silicon–mesoporous silicon” structure is studied. The morphology and dielectric properties of the buried insulating layer are investigated using electron microscopy, ellipsometry, and electrical measurements. Specific defects (so-called spikes) are revealed between the oxidized macropore walls in macroporous silicon and the oxidation crossing fronts in mesoporous silicon. It is found that, at an initial porosity of mesoporous silicon of 60%, three-stage thermal oxidation leads to the formation of buried silicon-dioxide layers with an electric-field breakdown strength of E{sub br} ~ 10{sup 4}–10{sup 5} V/cm. Multilayered “porous silicon-on-insulator” structures are shown to bemore » promising for integrated chemical micro- and nanosensors.« less

Fabrication of frequency selective surface for band stop IR-filter

NASA Astrophysics Data System (ADS)

Mishra, Akshita; Sudheer, Tiwari, P.; Mondal, P.; Bhatt, H.; Rai, V. N.; Srivastava, A. K.

2016-05-01

Fabrication and characterization of frequency selective surfaces (FSS) on silicon dioxide/ silicon is reported. Electron beam lithography based techniques are used for the fabrication of periodic slot structure in tungsten layer on silicon dioxide/silicon. The fabrication process consists of growth of SiO2 on silicon, tungsten deposition, electron beam lithography, and wet etching of tungsten. The optical characterization of the structural pattern was carried out using fourier transform infrared spectroscopy (FTIR). The reflectance spectra clearly show a resonance peak at 9.09 µm in the mid infrared region. This indicates that the patterned surface acts as band stop filter in the mid-infrared region.

Polysilicon photoconductor for integrated circuits

DOEpatents

Hammond, Robert B.; Bowman, Douglas R.

1989-01-01

A photoconductive element of polycrystalline silicon is provided with intrinsic response time which does not limit overall circuit response. An undoped polycrystalline silicon layer is deposited by LPCVD to a selected thickness on silicon dioxide. The deposited polycrystalline silicon is then annealed at a selected temperature and for a time effective to obtain crystal sizes effective to produce an enhanced current output. The annealed polycrystalline layer is subsequently exposed and damaged by ion implantation to a damage factor effective to obtain a fast photoconductive response.

Polysilicon photoconductor for integrated circuits

DOEpatents

Hammond, Robert B.; Bowman, Douglas R.

1990-01-01

A photoconductive element of polycrystalline silicon is provided with intrinsic response time which does not limit overall circuit response. An undoped polycrystalline silicon layer is deposited by LPCVD to a selected thickness on silicon dioxide. The deposited polycrystalline silicon is then annealed at a selected temperature and for a time effective to obtain crystal sizes effective to produce an enhanced current output. The annealed polycrystalline layer is subsequently exposed and damaged by ion implantation to a damage factor effective to obtain a fast photoconductive response.

Polysilicon photoconductor for integrated circuits

DOEpatents

Hammond, R.B.; Bowman, D.R.

1989-04-11

A photoconductive element of polycrystalline silicon is provided with intrinsic response time which does not limit overall circuit response. An undoped polycrystalline silicon layer is deposited by LPCVD to a selected thickness on silicon dioxide. The deposited polycrystalline silicon is then annealed at a selected temperature and for a time effective to obtain crystal sizes effective to produce an enhanced current output. The annealed polycrystalline layer is subsequently exposed and damaged by ion implantation to a damage factor effective to obtain a fast photoconductive response. 6 figs.

Low temperature production of large-grain polycrystalline semiconductors

DOEpatents

Naseem, Hameed A [Fayetteville, AR; Albarghouti, Marwan [Loudonville, NY

2007-04-10

An oxide or nitride layer is provided on an amorphous semiconductor layer prior to performing metal-induced crystallization of the semiconductor layer. The oxide or nitride layer facilitates conversion of the amorphous material into large grain polycrystalline material. Hence, a native silicon dioxide layer provided on hydrogenated amorphous silicon (a-Si:H), followed by deposited Al permits induced crystallization at temperatures far below the solid phase crystallization temperature of a-Si. Solar cells and thin film transistors can be prepared using this method.

Seamless lamination of a concave-convex architecture with single-layer graphene.

PubMed

Park, Ji-Hoon; Lim, Taekyung; Baik, Jaeyoon; Seo, Keumyoung; Moon, Youngkwon; Park, Noejung; Shin, Hyun-Joon; Kwak, Sang Kyu; Ju, Sanghyun; Ahn, Joung Real

2015-11-21

Graphene has been used as an electrode and channel material in electronic devices because of its superior physical properties. Recently, electronic devices have changed from a planar to a complicated three-dimensional (3D) geometry to overcome the limitations of planar devices. The evolution of electronic devices requires that graphene be adaptable to a 3D substrate. Here, we demonstrate that chemical-vapor-deposited single-layer graphene can be transferred onto a silicon dioxide substrate with a 3D geometry, such as a concave-convex architecture. A variety of silicon dioxide concave-convex architectures were uniformly and seamlessly laminated with graphene using a thermal treatment. The planar graphene was stretched to cover the concave-convex architecture, and the resulting strain on the curved graphene was spatially resolved by confocal Raman spectroscopy; molecular dynamic simulations were also conducted and supported the observations. Changes in electrical resistivity caused by the spatially varying strain induced as the graphene-silicon dioxide laminate varies dimensionally from 2D to 3D were measured by using a four-point probe. The resistivity measurements suggest that the electrical resistivity can be systematically controlled by the 3D geometry of the graphene-silicon dioxide laminate. This 3D graphene-insulator laminate will broaden the range of graphene applications beyond planar structures to 3D materials.

Fabrication of frequency selective surface for band stop IR-filter

DOE Office of Scientific and Technical Information (OSTI.GOV)

Mishra, Akshita, E-mail: akshitamishra27@gmail.com; Sudheer,; Tiwari, P.

2016-05-23

Fabrication and characterization of frequency selective surfaces (FSS) on silicon dioxide/ silicon is reported. Electron beam lithography based techniques are used for the fabrication of periodic slot structure in tungsten layer on silicon dioxide/silicon. The fabrication process consists of growth of SiO{sub 2} on silicon, tungsten deposition, electron beam lithography, and wet etching of tungsten. The optical characterization of the structural pattern was carried out using fourier transform infrared spectroscopy (FTIR). The reflectance spectra clearly show a resonance peak at 9.09 µm in the mid infrared region. This indicates that the patterned surface acts as band stop filter in the mid-infraredmore » region.« less

High temperature and frequency pressure sensor based on silicon-on-insulator layers

NASA Astrophysics Data System (ADS)

Zhao, Y. L.; Zhao, L. B.; Jiang, Z. D.

2006-03-01

Based on silicon on insulator (SOI) technology, a novel high temperature pressure sensor with high frequency response is designed and fabricated, in which a buried silicon dioxide layer in the silicon material is developed by the separation by implantation of oxygen (SIMOX) technology. This layer can isolate leak currents between the top silicon layer for the detecting circuit and body silicon at a temperature of about 200 °C. In addition, the technology of silicon and glass bonding is used to create a package of the sensor without internal strain. A structural model and test data from the sensor are presented. The experimental results showed that this kind of sensor possesses good static performance in a high temperature environment and high frequency dynamic characteristics, which may satisfy the pressure measurement demands of the oil industry, aviation and space, and so on.

Silicon based multilayer photoelectrodes for photoelectrolysis of water to produce hydrogen from the sun

NASA Astrophysics Data System (ADS)

Faruque, Faisal

The main objective of this work is to study different materials for the direct photosynthesis of hydrogen from water. A variety of photocatalysts such as titanium dioxide, titanium oxy-nitride, silicon carbide, and gallium nitride are being investigated by others for the clean production of hydrogen for fuel cells and hydrogen economy. Our approach was to deposit suitable metallic regions on photocatalyst nanoparticles to direct the efficient synthesis of hydrogen to a particular site for convenient collection. We studied different electrode metals such as gold, platinum, titanium, palladium, and tungsten. We also studied different solar cell materials such as silicon (p- and n-types), silicon carbide and titanium dioxide semiconductors in order to efficiently generate electrons under illumination. We introduced a novel silicon-based multilayer photosynthesis device to take advantage of suitable properties of silicon and tungsten to efficiently produce hydrogen. The device consisted of a silicon (0.5mm) substrate, a deposited atomic layer of Al2O 3 (1nm), a doped polysilicon (0.1microm), and finally a tungsten nanoporous (5-10nm) layer acting as an interface electrode with water. The Al2O 3 layer was introduced to reduce leakage current and to prevent the spreading of the diffused p-n junction layer between the silicon and doped polysilicon layers. The surface of the photoelectrode was coated with nanotextured tungsten nanopores (TNP), which increased the surface area of the electrodes to the electrolyte, assisting in electron-hole mobility, and acting as a photocatalyst. The reported device exhibited a fill factor (%FF) of 27.22% and solar-to-hydrogen conversion efficiency of 0.03174%. This thesis describes the structures of the device, and offers a characterization and comparison between different photoelectrodes.

Catalytically enhanced thermal decomposition of chemically grown silicon oxide layers on Si(001)

DOE Office of Scientific and Technical Information (OSTI.GOV)

Leroy, F., E-mail: leroy@cinam.univ-mrs.fr; Passanante, T.; Cheynis, F.

2016-03-14

The thermal decomposition of Si dioxide layers formed by wet chemical treatment on Si(001) has been studied by low-energy electron microscopy. Independent nucleations of voids occur into the Si oxide layers that open by reaction at the void periphery. Depending on the voids, the reaction rates exhibit large differences via the occurrence of a nonlinear growth of the void radius. This non-steady state regime is attributed to the accumulation of defects and silicon hydroxyl species at the SiO{sub 2}/Si interface that enhances the silicon oxide decomposition at the void periphery.

Nanofabrication of insulated scanning probes for electromechanical imaging in liquid solutions

PubMed Central

Noh, Joo Hyon; Nikiforov, Maxim; Kalinin, Sergei V.; Vertegel, Alexey A.; Rack, Philip D.

2011-01-01

In this paper, the fabrication and electrical and electromechanical characterization of insulated scanning probes have been demonstrated in liquid solutions. The silicon cantilevers were sequentially coated with chromium and silicon dioxide, and the silicon dioxide was selectively etched at tip apex using focused electron beam induced etching (FEBIE) with XeF2 The chromium layer acted not only as the conductive path from the tip, but also as an etch resistant layer. This insulated scanning probe fabrication process is compatible with any commercial AFM tip and can be used to easily tailor the scanning probe tip properties because FEBIE does not require lithography. The suitability of the fabricated probes is demonstrated by imaging of standard topographical calibration grid as well as piezoresponse force microscopy (PFM) and electrical measurements in ambient and liquid environments. PMID:20702930

pH-sensitive ion-selective field-effect transistor with zirconium dioxide film

DOE Office of Scientific and Technical Information (OSTI.GOV)

Vlasov, Yu.G.; Bratov, A.V.; Tarantov, Yu.A.

1988-09-20

Miniature semiconductor pH sensors for liquid media, i.e., ion-selective field-effect transistors (ISFETs), are silicon field-effect transistors with a two-layer dielectric consisting of a passivating SiO/sub 2/ layer adjoining the silicon and a layer of pH-sensitive material in contact with the electrolyte solution to be tested. This study was devoted to the characteristics of pH-sensitive ISFETs with ZrO/sub 2/ films. The base was p-type silicon (KDB-10) with a (100) surface orientation. A ZrO/sub 2/ layer 10-50 nm thick was applied over the SiO/sub 2/ layer by electron-beam deposition. The measurements were made in aqueous KNO/sub 3/ or KCl solutions.

Dispersion engineering of thick high-Q silicon nitride ring-resonators via atomic layer deposition.

PubMed

Riemensberger, Johann; Hartinger, Klaus; Herr, Tobias; Brasch, Victor; Holzwarth, Ronald; Kippenberg, Tobias J

2012-12-03

We demonstrate dispersion engineering of integrated silicon nitride based ring resonators through conformal coating with hafnium dioxide deposited on top of the structures via atomic layer deposition. Both, magnitude and bandwidth of anomalous dispersion can be significantly increased. The results are confirmed by high resolution frequency-comb-assisted-diode-laser spectroscopy and are in very good agreement with the simulated modification of the mode spectrum.

Charge-coupled device for low background observations

NASA Technical Reports Server (NTRS)

Loh, Edwin D. (Inventor); Cheng, Edward S. (Inventor)

2002-01-01

A charge-coupled device with a low-emissivity metal layer located between a sensing layer and a substrate provides reduction in ghost images. In a typical charge-coupled device of a silicon sensing layer, a silicon dioxide insulating layer, with a glass substrate and a metal carrier layer, a near-infrared photon, not absorbed in the first pass, enters the glass substrate, reflects from the metal carrier, thereby returning far from the original pixel in its entry path. The placement of a low-emissivity metal layer between the glass substrate and the sensing layer reflects near infrared photons before they reach the substrate so that they may be absorbed in the silicon nearer the pixel of their points of entry so that the reflected ghost image is coincident with the primary image for a sharper, brighter image.

[Comparison of the shear bond strength by using nano silica sol to zirconia basement and veneer porcelain].

PubMed

Wang, Si-qian; Zhang, Da-feng; Zhen, Tie-li; Yang, Jing-yuan; Lin, Ting-ting; Ma, Jian-feng

2016-04-01

To investigate the feasibility of using sol gel technique to produce thin layer nano silicon dioxide on zirconia ceramic surface and the effect of improving shear bond strength between zirconia and veneer porcelain. The presintered zirconia specimen was cut into a rectangle block piece (15 mm×10 mm×2.5 mm), a total of 40 pieces were obtained and divided into 4 groups, each group had 10 pieces. Four different treatments were used in each group respectively. Pieces in group A (control group) were only sintered at 1450°C to crystallization; pieces in group B underwent 30% nano silica sol infiltration first and then were sintered at 1450°C to crystallization; piece in group C underwent crystallization first at 1450°C, then 30% nano silica sol infiltration and were sintered at 1450°C again; pieces in group D was coated by nano silica sol and then sintered at 1450°C to crystallization; ten rectangle block pieces (12 mm×8 mm×2 mm) in group E were made. Cylinder veneers 5 mm in diameter and 4 mm in height were produced in each group and the shear bond strength was tested. Data were statistically analyzed by SPSS 19.0 software package. The shear bond strength of the 5 group specimens were: (28.12±2.95) MPa in group A, (31.09±3.94) MPa in group B, (25.60±2.45) MPa in group C, (31.75±4.90) MPa in group D, (28.67±3.95) MPa in group E, respectively. Significant differences existed between the 5 groups, and group C had significant difference compared with group B and D. CONCLUSIONS：① Use of nano silicon sol gel on presintered zirconia surface to make thin layer of nano silicon dioxide can improve the shear bond strength between zirconia and veneer; ②Using nano silicon sol gel on crystallization zirconia surface to make thin layer of nano silicon dioxide will decrease the shear bond strength between zirconia and veneer; ③ Zirconia veneer bilayer ceramic has the same shear bond strength with porcelain fused to Ni Cr alloy; ④Use of sol gel technique to produce thin layer nano silicon dioxide on zirconia ceramic surface is feasible and can improve shear bond strength between zirconia and veneer porcelain.

Changes in size of nano phase iron inclusions with temperature: Experimental simulation of space weathering effects at high temperature

NASA Astrophysics Data System (ADS)

Rout, S. S.; Moroz, L. V.; Stockhoff, T.; Baither, D.; Bischoff, A.; Hiesinger, H.

2011-10-01

The mean size of nano phase iron inclusions (npFe0), produced during the space weathering of iron-rich regolith of airless solar system bodies, significantly affects visible and near-infrared (VNIR) spectra. To experimentally simulate the change in the size of npFe0 inclusions with increasing temperature, we produced sputter film deposits on a silicon dioxide substrate by sputtering a pressed pellet prepared from fine olivine powder using 600V Ar+ ions. This silicon dioxide substrate covered with the deposit was later heated to 450°C for 24 hours in an oven under argon atmosphere. Initial TEM analysis of the unheated silicon dioxide substrate showed the presence of a ~ 50 nm-thick layer of an amorphous deposit with nano clusters that has not yet been identified.

An Analytical Model of Joule Heating in Piezoresistive Microcantilevers

PubMed Central

Ansari, Mohd Zahid; Cho, Chongdu

2010-01-01

The present study investigates Joule heating in piezoresistive microcantilever sensors. Joule heating and thermal deflections are a major source of noise in such sensors. This work uses analytical and numerical techniques to characterise the Joule heating in 4-layer piezoresistive microcantilevers made of silicon and silicon dioxide substrates but with the same U-shaped silicon piezoresistor. A theoretical model for predicting the temperature generated due to Joule heating is developed. The commercial finite element software ANSYS Multiphysics was used to study the effect of electrical potential on temperature and deflection produced in the cantilevers. The effect of piezoresistor width on Joule heating is also studied. Results show that Joule heating strongly depends on the applied potential and width of piezoresistor and that a silicon substrate cantilever has better thermal characteristics than a silicon dioxide cantilever. PMID:22163433

An analytical model of joule heating in piezoresistive microcantilevers.

PubMed

Ansari, Mohd Zahid; Cho, Chongdu

2010-01-01

The present study investigates Joule heating in piezoresistive microcantilever sensors. Joule heating and thermal deflections are a major source of noise in such sensors. This work uses analytical and numerical techniques to characterise the Joule heating in 4-layer piezoresistive microcantilevers made of silicon and silicon dioxide substrates but with the same U-shaped silicon piezoresistor. A theoretical model for predicting the temperature generated due to Joule heating is developed. The commercial finite element software ANSYS Multiphysics was used to study the effect of electrical potential on temperature and deflection produced in the cantilevers. The effect of piezoresistor width on Joule heating is also studied. Results show that Joule heating strongly depends on the applied potential and width of piezoresistor and that a silicon substrate cantilever has better thermal characteristics than a silicon dioxide cantilever.

Laser ablation of single-crystalline silicon by radiation of pulsed frequency-selective fiber laser

NASA Astrophysics Data System (ADS)

Veiko, V. P.; Skvortsov, A. M.; Huynh, C. T.; Petrov, A. A.

2015-07-01

We have studied the process of destruction of the surface of a single-crystalline silicon wafer scanned by the beam of a pulsed ytterbium-doped fiber laser radiation with a wavelength of λ = 1062 nm. It is established that the laser ablation can proceed without melting of silicon and the formation of a plasma plume. Under certain parameters of the process (radiation power, beam scan velocity, and beam overlap density), pronounced oxidation of silicon microparticles with the formation of a characteristic loose layer of fine powdered silicon dioxide has been observed for the first time. The range of lasing and beam scanning regimes in which the growth of SiO2 layer takes place is determined.

Electrical and Optical Characterization of Sputtered Silicon Dioxide, Indium Tin Oxide, and Silicon Dioxide/Indium Tin Oxide Antireflection Coating on Single-Junction GaAs Solar Cells

PubMed Central

Ho, Wen-Jeng; Lin, Jian-Cheng; Liu, Jheng-Jie; Bai, Wen-Bin; Shiao, Hung-Pin

2017-01-01

This study characterized the electrical and optical properties of single-junction GaAs solar cells coated with antireflective layers of silicon dioxide (SiO2), indium tin oxide (ITO), and a hybrid layer of SiO2/ITO applied using Radio frequency (RF) sputtering. The conductivity and transparency of the ITO film were characterized prior to application on GaAs cells. Reverse saturation-current and ideality factor were used to evaluate the passivation performance of the various coatings on GaAs solar cells. Optical reflectance and external quantum efficiency response were used to evaluate the antireflective performance of the coatings. Photovoltaic current-voltage measurements were used to confirm the efficiency enhancement obtained by the presence of the anti-reflective coatings. The conversion efficiency of the GaAs cells with an ITO antireflective coating (23.52%) exceeded that of cells with a SiO2 antireflective coating (21.92%). Due to lower series resistance and higher short-circuit current-density, the carrier collection of the GaAs cell with ITO coating exceeded that of the cell with a SiO2/ITO coating. PMID:28773063

Optimizing pentacene thin-film transistor performance: Temperature and surface condition induced layer growth modification.

PubMed

Lassnig, R; Hollerer, M; Striedinger, B; Fian, A; Stadlober, B; Winkler, A

2015-11-01

In this work we present in situ electrical and surface analytical, as well as ex situ atomic force microscopy (AFM) studies on temperature and surface condition induced pentacene layer growth modifications, leading to the selection of optimized deposition conditions and entailing performance improvements. We prepared p ++ -silicon/silicon dioxide bottom-gate, gold bottom-contact transistor samples and evaluated the pentacene layer growth for three different surface conditions (sputtered, sputtered + carbon and unsputtered + carbon) at sample temperatures during deposition of 200 K, 300 K and 350 K. The AFM investigations focused on the gold contacts, the silicon dioxide channel region and the highly critical transition area. Evaluations of coverage dependent saturation mobilities, threshold voltages and corresponding AFM analysis were able to confirm that the first 3-4 full monolayers contribute to the majority of charge transport within the channel region. At high temperatures and on sputtered surfaces uniform layer formation in the contact-channel transition area is limited by dewetting, leading to the formation of trenches and the partial development of double layer islands within the channel region instead of full wetting layers. By combining the advantages of an initial high temperature deposition (well-ordered islands in the channel) and a subsequent low temperature deposition (continuous film formation for low contact resistance) we were able to prepare very thin (8 ML) pentacene transistors of comparably high mobility.

Optimizing pentacene thin-film transistor performance: Temperature and surface condition induced layer growth modification

PubMed Central

Lassnig, R.; Hollerer, M.; Striedinger, B.; Fian, A.; Stadlober, B.; Winkler, A.

2015-01-01

In this work we present in situ electrical and surface analytical, as well as ex situ atomic force microscopy (AFM) studies on temperature and surface condition induced pentacene layer growth modifications, leading to the selection of optimized deposition conditions and entailing performance improvements. We prepared p++-silicon/silicon dioxide bottom-gate, gold bottom-contact transistor samples and evaluated the pentacene layer growth for three different surface conditions (sputtered, sputtered + carbon and unsputtered + carbon) at sample temperatures during deposition of 200 K, 300 K and 350 K. The AFM investigations focused on the gold contacts, the silicon dioxide channel region and the highly critical transition area. Evaluations of coverage dependent saturation mobilities, threshold voltages and corresponding AFM analysis were able to confirm that the first 3–4 full monolayers contribute to the majority of charge transport within the channel region. At high temperatures and on sputtered surfaces uniform layer formation in the contact–channel transition area is limited by dewetting, leading to the formation of trenches and the partial development of double layer islands within the channel region instead of full wetting layers. By combining the advantages of an initial high temperature deposition (well-ordered islands in the channel) and a subsequent low temperature deposition (continuous film formation for low contact resistance) we were able to prepare very thin (8 ML) pentacene transistors of comparably high mobility. PMID:26543442

Die singulation method

DOEpatents

Swiler, Thomas P.; Garcia, Ernest J.; Francis, Kathryn M.

2013-06-11

A method is disclosed for singulating die from a semiconductor substrate (e.g. a semiconductor-on-insulator substrate or a bulk silicon substrate) containing an oxide layer (e.g. silicon dioxide or a silicate glass) and one or more semiconductor layers (e.g. monocrystalline or polycrystalline silicon) located above the oxide layer. The method etches trenches through the substrate and through each semiconductor layer about the die being singulated, with the trenches being offset from each other around at least a part of the die so that the oxide layer between the trenches holds the substrate and die together. The trenches can be anisotropically etched using a Deep Reactive Ion Etching (DRIE) process. After the trenches are etched, the oxide layer between the trenches can be etched away with an HF etchant to singulate the die. A release fixture can be located near one side of the substrate to receive the singulated die.

Die singulation method

DOEpatents

Swiler, Thomas P [Albuquerque, NM; Garcia, Ernest J [Albuquerque, NM; Francis, Kathryn M [Rio Rancho, NM

2014-01-07

A method is disclosed for singulating die from a semiconductor substrate (e.g. a semiconductor-on-insulator substrate or a bulk silicon substrate) containing an oxide layer (e.g. silicon dioxide or a silicate glass) and one or more semiconductor layers (e.g. monocrystalline or polycrystalline silicon) located above the oxide layer. The method etches trenches through the substrate and through each semiconductor layer about the die being singulated, with the trenches being offset from each other around at least a part of the die so that the oxide layer between the trenches holds the substrate and die together. The trenches can be anisotropically etched using a Deep Reactive Ion Etching (DRIE) process. After the trenches are etched, the oxide layer between the trenches can be etched away with a HF etchant to singulate the die. A release fixture can be located near one side of the substrate to receive the singulated die.

Nitrogen doped silicon-carbon multilayer protective coatings on carbon obtained by thermionic vacuum arc (TVA) method

NASA Astrophysics Data System (ADS)

Ciupinǎ, Victor; Vasile, Eugeniu; Porosnicu, Corneliu; Vladoiu, Rodica; Mandes, Aurelia; Dinca, Virginia; Nicolescu, Virginia; Manu, Radu; Dinca, Paul; Zaharia, Agripina

2018-02-01

To obtain protective nitrogen doped Si-C multilayer coatings on carbon, used to improve the oxidation resistance of carbon, was used TVA method. The initial carbon layer has been deposed on a silicon substrate in the absence of nitrogen, and then a 3nm Si thin film to cover carbon layer was deposed. Further, seven Si and C layers were alternatively deposed in the presence of nitrogen ions. In order to form silicon carbide at the interface between silicon and carbon layers, all carbon, silicon and nitrogen ions energy has increased up to 150eV. The characterization of microstructure and electrical properties of as-prepared N-Si-C multilayer structures were done using Transmission Electron Microscopy (TEM, STEM) techniques, Thermal Desorption Spectroscopy (TDS) and electrical measurements. The retention of oxygen in the protective layer of N-Si-C is due to the following phenomena: (a) The reaction between oxygen and silicon carbide resulting in silicon oxide and carbon dioxide; (b) The reaction involving oxygen, nitrogen and silicon resulting silicon oxinitride with a variable composition; (c) Nitrogen acts as a trapping barrier for oxygen. To perform electrical measurements, ohmic contacts were attached on the N-Si-C samples. Electrical conductivity was measured in constant current mode. To explain the temperature behavior of electrical conductivity we assumed a thermally activated electric transport mechanism.

Thin film capillary process and apparatus

DOEpatents

Yu, Conrad M.

2003-11-18

Method and system of forming microfluidic capillaries in a variety of substrate materials. A first layer of a material such as silicon dioxide is applied to a channel etched in substrate. A second, sacrificial layer of a material such as a polymer is deposited on the first layer. A third layer which may be of the same material as the first layer is placed on the second layer. The sacrificial layer is removed to form a smooth walled capillary in the substrate.

Ballistic Phonon Penetration Depth in Amorphous Silicon Dioxide.

PubMed

Yang, Lin; Zhang, Qian; Cui, Zhiguang; Gerboth, Matthew; Zhao, Yang; Xu, Terry T; Walker, D Greg; Li, Deyu

2017-12-13

Thermal transport in amorphous silicon dioxide (a-SiO 2 ) is traditionally treated as random walks of vibrations owing to its greatly disordered structure, which results in a mean free path (MFP) approximately the same as the interatomic distance. However, this picture has been debated constantly and in view of the ubiquitous existence of thin a-SiO 2 layers in nanoelectronic devices, it is imperative to better understand this issue for precise thermal management of electronic devices. Different from the commonly used cross-plane measurement approaches, here we report on a study that explores the in-plane thermal conductivity of double silicon nanoribbons with a layer of a-SiO 2 sandwiched in-between. Through comparing the thermal conductivity of the double ribbon samples with that of corresponding single ribbons, we show that thermal phonons can ballistically penetrate through a-SiO 2 of up to 5 nm thick even at room temperature. Comprehensive examination of double ribbon samples with various oxide layer thicknesses and van der Waals bonding strengths allows for extraction of the average ballistic phonon penetration depth in a-SiO 2 . With solid experimental data demonstrating ballistic phonon transport through a-SiO 2 , this work should provide important insight into thermal management of electronic devices.

Silicon/HfO{sub 2} interface: Effects of gamma irradiation

DOE Office of Scientific and Technical Information (OSTI.GOV)

Maurya, Savita

2016-05-23

Quality of MOS devices is a strong function of substrate and oxide interface. In this work we have studied how gamma photon irradiation affects the interface of a 13 nm thick, atomic layer deposited hafnium dioxide deposited on silicon wafer. CV and GV measurements have been done for pristine and irradiated samples to quantify the effect of gamma photon irradiation. Gamma photon irradiation not only introduces positive charge in the oxide and at the interface of Si/HfO{sub 2} interface but also induce phase change of oxide layer. Maximum oxide capacitances are affected by gamma photon irradiation.

[The project and simulation of a compositive miniature spectrum instrument based on the array of Fabry-Perot cavity].

PubMed

Wen, Zhi-yu; Chen, Gang; Wang, Jian-guo

2006-10-01

This paper advances a kind of micro-spectrometer based on Fabry-Perot cavity's character of filtering the waves. The basic structure of the micro-spectrometer is the array of Fabry-Perot cavity which contains many different lengths of cavity on the substrate of silicon, consequently the authors can achieve the detection at several wavelengths simultaneously. The unit of probing is a Fabry-Perot cavity made up of the substrate of silicon-metal film-silicon dioxide layer-metal film. The authors carried out the corresponding simulation. In the basic structure of aluminum film(14 nm)-silicon dioxide layer-silver film(39 nm), the resolution can reach 15 nm. When the area of a unit of probing is 0.14 mm x 0.14 mm only, it can reach the luminous flux of miniature grating spectrum instrument (the minimum volume in the order of cm), but the volume of the part of spectrum detection is only of the order of mm. The design size of the micro-spectrometer is a few millimeters. Furthermore it has no movable parts and could detect several wavelengths at the same time. It is possible to fabricate such micro-spectrometer through existing processing methods of IC technology.

Examination of humidity effects on measured thickness and interfacial phenomena of exfoliated graphene on silicon dioxide via amplitude modulation atomic force microscopy

DOE Office of Scientific and Technical Information (OSTI.GOV)

Jinkins, K.; Farina, L.; Wu, Y., E-mail: wuy@uwplatt.edu

2015-12-14

The properties of Few-Layer Graphene (FLG) change with the number of layers and Amplitude Modulation (AM) Atomic Force Microscopy (AFM) is commonly used to determine the thickness of FLG. However, AFM measurements have been shown to be sensitive to environmental conditions such as relative humidity (RH). In the present study, AM-AFM is used to measure the thickness and loss tangent of exfoliated graphene on silicon dioxide (SiO{sub 2}) as RH is increased from 10% to 80%. We show that the measured thickness of graphene is dependent on RH. The loss tangent values of the graphene and oxide regions are bothmore » affected by humidity, with generally higher loss tangent for graphene than SiO{sub 2}. As RH increases, we observe the loss tangent of both materials approaches the same value. We hypothesize that there is a layer of water trapped between the graphene and SiO{sub 2} substrate to explain this observation. Using this interpretation, the loss tangent images also indicate movement and change in this trapped water layer as RH increases, which impacts the measured thickness of graphene using AM-AFM.« less

Comparative Study of Solution Phase and Vapor Phase Deposition of Aminosilanes on Silicon Dioxide Surfaces

PubMed Central

Yadav, Amrita R.; Sriram, Rashmi; Carter, Jared A.; Miller, Benjamin L.

2014-01-01

The uniformity of aminosilane layers typically used for the modification of hydroxyl bearing surfaces such as silicon dioxide is critical for a wide variety of applications, including biosensors. However, in spite of many studies that have been undertaken on surface silanization, there remains a paucity of easy-to-implement deposition methods reproducibly yielding smooth aminosilane monolayers. In this study, solution- and vapor-phase deposition methods for three aminoalkoxysilanes differing in the number of reactive groups (3-aminopropyl triethoxysilane (APTES), 3-aminopropyl methyl diethoxysilane (APMDES) and 3-aminopropyl dimethyl ethoxysilane (APDMES)) were assessed with the aim of identifying methods that yield highly uniform and reproducible silane layers that are resistant to minor procedural variations. Silane film quality was characterized based on measured thickness, hydrophilicity and surface roughness. Additionally, hydrolytic stability of the films was assessed via these thickness and contact angle values following desorption in water. We found that two simple solution-phase methods, an aqueous deposition of APTES and a toluene based deposition of APDMES, yielded high quality silane layers that exhibit comparable characteristics to those deposited via vapor-phase methods. PMID:24411379

Pulsed deposition of silicate films

NASA Astrophysics Data System (ADS)

He, W.; Solanki, R.; Conley, J. F.; Ono, Y.

2003-09-01

A sequential pulsed process is utilized for deposition of nonstoichiometric silicate films without employing an oxidizing agent. The metal precursors were HfCl4, AlCl3, and ZrCl4, as well as Hf(NO3)4 and the silicon source was tris(tert-butoxy)silanol. Unlike atomic layer deposition, the growth per cycle was several monolayers thick, where the enhancement in growth was due to a catalytic reaction. The bulk and electrical properties of these films are similar to those of silicon dioxide. Silicon carbide devices coated with these films show good insulating characteristics.

Detector and energy analyzer for energetic-hydrogen in beams and plasmas

DOEpatents

Bastasz, R.J.; Hughes, R.C.; Wampler, W.R.

1988-11-01

A detector for detecting energetic hydrogen ions and atoms ranging in energy from about 1 eV up to 1 keV in an evacuated environment includes a Schottky diode with a palladium or palladium-alloy gate metal applied to a silicon-dioxide layer on an n-silicon substrate. An array of the energetic-hydrogen detectors having a range of energy sensitivities form a plasma energy analyzer having a rapid response time and a sensitivity for measuring fluxes of energetic hydrogen. The detector is sensitive to hydrogen and its isotopes but is insensitive to non-hydrogenic particles. The array of energetic-hydrogen detectors can be formed on a single silicon chip, with thin-film layers of gold metal applied in various thicknesses to successive detectors in the array. The gold layers serve as particle energy-filters so that each detector is sensitive to a different range of hydrogen energies. 4 figs.

Durable thin film coatings for reflectors used in low earth orbit

NASA Technical Reports Server (NTRS)

Mcclure, Donald J.

1989-01-01

This paper discusses the properties of thin film coatings used to provide a durable reflective surface for solar concentrators used in the solar dynamic system designed for the Space Station. The material system to be used consists of an adhesion promotion layer, a silver reflective layer, and a protective layer of aluminum oxide and silicon dioxide. The performance characteristics of this system are described and compared to those of several alternative systems which use aluminum as the reflective layer.

Titanium dioxide/silicon hole-blocking selective contact to enable double-heterojunction crystalline silicon-based solar cell

DOE Office of Scientific and Technical Information (OSTI.GOV)

Nagamatsu, Ken A., E-mail: knagamat@princeton.edu; Man, Gabriel; Jhaveri, Janam

2015-03-23

In this work, we use an electron-selective titanium dioxide (TiO{sub 2}) heterojunction contact to silicon to block minority carrier holes in the silicon from recombining at the cathode contact of a silicon-based photovoltaic device. We present four pieces of evidence demonstrating the beneficial effect of adding the TiO{sub 2} hole-blocking layer: reduced dark current, increased open circuit voltage (V{sub OC}), increased quantum efficiency at longer wavelengths, and increased stored minority carrier charge under forward bias. The importance of a low rate of recombination of minority carriers at the Si/TiO{sub 2} interface for effective blocking of minority carriers is quantitatively described.more » The anode is made of a poly(3,4-ethylenedioxythiophene):poly(styrenesulfonate) heterojunction to silicon which forms a hole selective contact, so that the entire device is made at a maximum temperature of 100 °C, with no doping gradients or junctions in the silicon. A low rate of recombination of minority carriers at the Si/TiO{sub 2} interface is crucial for effective blocking of minority carriers. Such a pair of complementary carrier-selective heterojunctions offers a path towards high-efficiency silicon solar cells using relatively simple and near-room temperature fabrication techniques.« less

Nanopillar Photonic Crystal Lasers for Tb/s Transceivers on Silicon

DTIC Science & Technology

2015-07-09

dimensions of NWs can be adjusted by lithographically patterned nanoholes on dielectric mask. Some studies of SAE growth on Si using Ga droplets, i.e. Ga...inside the patterned nanoholes . In this study, the effects of seeding layer growth temperature on uniformity, vertical yield, and optical...thermal silicon dioxide (SiO2). Next, E-Beam resist ZEP520A was coated and nanoholes were patterned by E-Beam lithography (EBL). The designed diameter

TID Simulation of Advanced CMOS Devices for Space Applications

NASA Astrophysics Data System (ADS)

Sajid, Muhammad

2016-07-01

This paper focuses on Total Ionizing Dose (TID) effects caused by accumulation of charges at silicon dioxide, substrate/silicon dioxide interface, Shallow Trench Isolation (STI) for scaled CMOS bulk devices as well as at Buried Oxide (BOX) layer in devices based on Silicon-On-Insulator (SOI) technology to be operated in space radiation environment. The radiation induced leakage current and corresponding density/concentration electrons in leakage current path was presented/depicted for 180nm, 130nm and 65nm NMOS, PMOS transistors based on CMOS bulk as well as SOI process technologies on-board LEO and GEO satellites. On the basis of simulation results, the TID robustness analysis for advanced deep sub-micron technologies was accomplished up to 500 Krad. The correlation between the impact of technology scaling and magnitude of leakage current with corresponding total dose was established utilizing Visual TCAD Genius program.

Low-Power RIE of SiO2 in CHF3 To Obtain Steep Sidewalls

NASA Technical Reports Server (NTRS)

Turner, Tasha; Wu, Chi

2003-01-01

A reactive-ion etching (RIE) process has been developed to enable the formation of holes with steep sidewalls in a layer of silicon dioxide that covers a silicon substrate. The holes in question are through the thickness of the SiO2 and are used to define silicon substrate areas to be etched or to be built upon through epitaxial deposition of silicon. The sidewalls of these holes are required to be vertical in order to ensure that the sidewalls of the holes to be etched in the substrate or the sidewalls of the epitaxial deposits, respectively, also turn out to be vertical.

Vacuum arc plasma deposition of thin titanium dioxide films on silicone elastomer as a functional coating for medical applications.

PubMed

Boudot, Cécile; Kühn, Marvin; Kühn-Kauffeldt, Marina; Schein, Jochen

2017-05-01

Silicone elastomer is a promising material for medical applications and is widely used for implants with blood and tissue contact. However, its strong hydrophobicity limits adhesion of tissue cells to silicone surfaces, which can impair the healing process. To improve the biological properties of silicone, a triggerless pulsed vacuum cathodic arc plasma deposition technique was applied to deposit titanium dioxide (TiO 2 ) films onto the surface. Scanning electron microscopy, atomic force microscopy, X-ray photoelectron spectroscopy, Raman spectroscopy and contact angle measurements were used for coating characterization. Deposited films were about 150nm thick and exhibited good adhesion to the underlying silicone substrate. Surface wettability and roughness both increased after deposition of the TiO 2 layer. In addition, cell-biological investigations demonstrated that the in-vitro cytocompatibility of TiO 2 -coated samples was greatly improved without impacting silicone's nontoxicity. For validation of use in medical devices, further investigations were conducted and demonstrated stability of surface properties in an aqueous environment for a period of 68days and the coating's resistance to several sterilization methods. Copyright © 2016 Elsevier B.V. All rights reserved.

Dopants Diffusion in Silicon during Molecular Oxygen/nitrogen Trifluoride Oxidation and Related Phenomena

NASA Astrophysics Data System (ADS)

Kim, U. S.

1990-01-01

To date, chlorine has been used as useful additives in silicon oxidation. However, rapid scaling of device dimensions motivates the development of a new dielectric layer or modification of the silicon dioxide itself. More recently, chemically enhanced thermal oxidation by the use of fluorine containing species has been introduced to verify the potential of fluorine in the silicon oxidation process. In this study, gaseous nitrogen trifluoride (NF _3) was selected as the fluorine oxidizing source based on ease of use and was compared with the dichlorofluoroethane (C_2H _3Cl_2F) source. Two different kinds of boron marker samples were prepared and oxidized in O_2/NF_3 ambient for the comparison of surface vs bulk oxidation enhanced/retarded diffusion (OED/ORD). The phosphorus, arsenic and antimony diffusion in silicon during fluorine oxidation has been studied using the various covering layers such as SiO_2, Si_3 N_4, and SiO_2 + Si_3N_4 layers. The oxidation related phenomena, i.e. enhanced silicon and silicon nitride oxidation in fluorine ambient were studied and correlated with the point defect balance at the oxidizing interface. The results of this investigation were discussed with special emphasis on the effect of fluorine on enhanced oxidation and dopant diffusion.

Mo/Si multilayers with enhanced TiO II- and RuO II-capping layers

NASA Astrophysics Data System (ADS)

Yulin, Sergiy; Benoit, Nicolas; Feigl, Torsten; Kaiser, Norbert; Fang, Ming; Chandhok, Manish

2008-03-01

The lifetime of Mo/Si multilayer-coated projection optics is one of the outstanding issues on the road of commercialization of extreme-ultraviolet lithography (EUVL). The application of Mo/Si multilayer optics in EUVL requires both sufficient radiation stability and also the highest possible normal-incidence reflectivity. A serious problem of conventional high-reflective Mo/Si multilayers capped by silicon is the considerable degradation of reflective properties due to carbonization and oxidation of the silicon surface layer under exposure by EUV radiation. In this study, we focus on titanium dioxide (TiO II) and ruthenium dioxide (RuO II) as promising capping layer materials for EUVL multilayer coatings. The multilayer designs as well as the deposition parameters of the Mo/Si systems with different capping layers were optimized in terms of maximum peak reflectivity at the wavelength of 13.5 nm and longterm stability under high-intensive irradiation. Optimized TiO II-capped Mo/Si multilayer mirrors with an initial reflectivity of 67.0% presented a reflectivity drop of 0.6% after an irradiation dose of 760 J/mm2. The reflectivity drop was explained by the partial oxidation of the silicon sub-layer. No reflectivity loss after similar irradiation dose was found for RuO II-capped Mo/Si multilayer mirrors having initial peak reflectivity of 66%. In this paper we present data on improved reflectivity of interface-engineered TiO II- and RuO II-capped Mo/Si multilayer mirrors due to the minimization of both interdiffusion processes inside the multilayer stack and absorption loss in the oxide layer. Reflectivities of 68.5% at the wavelength of 13.4 nm were achieved for both TiO II- and RuO II-capped Mo/Si multilayer mirrors.

[Study of purity tests for silicone resins].

PubMed

Sato, Kyoko; Otsuki, Noriko; Ohori, Akio; Chinda, Mitsuru; Furusho, Noriko; Osako, Tsutomu; Akiyama, Hiroshi; Kawamura, Yoko

2012-01-01

In the 8th edition of Japan's Specifications and Standards for Food Additives, the purity test for silicone resins requires the determination of the refractive index and kinetic viscosity of the extracted silicone oil, and allows for only a limited amount of silicon dioxide. In the purity test, carbon tetrachloride is used to separate the silicone oil and silicon dioxide. To exclude carbon tetrachloride, methods were developed for separating the silicone oil and silicon dioxide from silicone resin, which use hexane and 10% n-dodecylbenzenesulfonic acid in hexane. For silicone oil, the measured refractive index and kinetic viscosity of the silicone oil obtained from the hexane extract were shown to be equivalent to those of the intact silicone oil. In regard to silicon dioxide, it was confirmed that, following the separation with 10% n-dodecylbenzenesulfonic acid in hexane, the level of silicon dioxide in silicone resin can be accurately determined. Therefore, in this study, we developed a method for testing the purity of silicone resins without the use of carbon tetrachloride, which is a harmful reagent.

Durability Enhancement of a Microelectromechanical System-Based Liquid Droplet Lens

NASA Astrophysics Data System (ADS)

Kyoo Lee, June; Park, Kyung-Woo; Kim, Hak-Rin; Kong, Seong Ho

2010-06-01

In this paper, we propose methods to enhance the durability of a microelectromechanical system (MEMS)-based liquid droplet lens driven by electrowetting. The enhanced durability of the lens is achieved through not only improvement in quality of dielectric layer for electrowetting by minimizing concentration of coarse pinholes, but also mitigation of physical and electrostatic stresses by reforming lens cavity. Silicon dioxide layer is deposited using plasma enhanced chemical vapor deposition, splitting the process into several steps to minimize the pinhole concentration in the oxide layer. And the stresses-reduced cavity in a form of overturned tetra-angular truncated pyramid with rounded corners, which is based on simulated results, is proposed and realized using silicon wet etching processes combined into anisotropic and isotropic etching.

Ultrathin, transferred layers of thermally grown silicon dioxide as biofluid barriers for biointegrated flexible electronic systems.

PubMed

Fang, Hui; Zhao, Jianing; Yu, Ki Jun; Song, Enming; Farimani, Amir Barati; Chiang, Chia-Han; Jin, Xin; Xue, Yeguang; Xu, Dong; Du, Wenbo; Seo, Kyung Jin; Zhong, Yiding; Yang, Zijian; Won, Sang Min; Fang, Guanhua; Choi, Seo Woo; Chaudhuri, Santanu; Huang, Yonggang; Alam, Muhammad Ashraful; Viventi, Jonathan; Aluru, N R; Rogers, John A

2016-10-18

Materials that can serve as long-lived barriers to biofluids are essential to the development of any type of chronic electronic implant. Devices such as cardiac pacemakers and cochlear implants use bulk metal or ceramic packages as hermetic enclosures for the electronics. Emerging classes of flexible, biointegrated electronic systems demand similar levels of isolation from biofluids but with thin, compliant films that can simultaneously serve as biointerfaces for sensing and/or actuation while in contact with the soft, curved, and moving surfaces of target organs. This paper introduces a solution to this materials challenge that combines (i) ultrathin, pristine layers of silicon dioxide (SiO 2 ) thermally grown on device-grade silicon wafers, and (ii) processing schemes that allow integration of these materials onto flexible electronic platforms. Accelerated lifetime tests suggest robust barrier characteristics on timescales that approach 70 y, in layers that are sufficiently thin (less than 1 μm) to avoid significant compromises in mechanical flexibility or in electrical interface fidelity. Detailed studies of temperature- and thickness-dependent electrical and physical properties reveal the key characteristics. Molecular simulations highlight essential aspects of the chemistry that governs interactions between the SiO 2 and surrounding water. Examples of use with passive and active components in high-performance flexible electronic devices suggest broad utility in advanced chronic implants.

Ultrathin, transferred layers of thermally grown silicon dioxide as biofluid barriers for biointegrated flexible electronic systems

PubMed Central

Fang, Hui; Yu, Ki Jun; Song, Enming; Farimani, Amir Barati; Chiang, Chia-Han; Jin, Xin; Xu, Dong; Du, Wenbo; Seo, Kyung Jin; Zhong, Yiding; Yang, Zijian; Won, Sang Min; Fang, Guanhua; Choi, Seo Woo; Chaudhuri, Santanu; Huang, Yonggang; Alam, Muhammad Ashraful; Viventi, Jonathan; Aluru, N. R.; Rogers, John A.

2016-01-01

Materials that can serve as long-lived barriers to biofluids are essential to the development of any type of chronic electronic implant. Devices such as cardiac pacemakers and cochlear implants use bulk metal or ceramic packages as hermetic enclosures for the electronics. Emerging classes of flexible, biointegrated electronic systems demand similar levels of isolation from biofluids but with thin, compliant films that can simultaneously serve as biointerfaces for sensing and/or actuation while in contact with the soft, curved, and moving surfaces of target organs. This paper introduces a solution to this materials challenge that combines (i) ultrathin, pristine layers of silicon dioxide (SiO2) thermally grown on device-grade silicon wafers, and (ii) processing schemes that allow integration of these materials onto flexible electronic platforms. Accelerated lifetime tests suggest robust barrier characteristics on timescales that approach 70 y, in layers that are sufficiently thin (less than 1 μm) to avoid significant compromises in mechanical flexibility or in electrical interface fidelity. Detailed studies of temperature- and thickness-dependent electrical and physical properties reveal the key characteristics. Molecular simulations highlight essential aspects of the chemistry that governs interactions between the SiO2 and surrounding water. Examples of use with passive and active components in high-performance flexible electronic devices suggest broad utility in advanced chronic implants. PMID:27791052

Improvement in lifetime of green organic light-emitting device

NASA Astrophysics Data System (ADS)

Ki, Hyun Chul; Kim, Seon Hoon; Kim, Doo Gun; Kim, Hyun Jin; Ko, Hang Ju; Han, Myung-Soo; Kim, Hwe Jong; Hong, Kyung Jin

2010-02-01

We have proposed a novel encapsulation method with simple process in comparison with conventional encapsulation technique. Here, the encapsulation film of silicon dioxide is steady for external environment because this can be designed to cover the emitting organic material from air. Silicon dioxide of 220 nm was deposited by plasma enhanced chemical vapor deposition and etched by reactive ion etching system. Then, Alq3 was used as a material to emitting layer in the green (organic light emitting device) OLED and TPD in the hole transportation layer was used for the harmonious transportation of hole. Luminance was measured with 40 hour intervals at the air-exposed condition. After 400, 1,000, 1,600, and 2,000 hours, luminance of green OLED were 7,366, 7,200, 6,210, and 5,100 cd/m2, respectively. Luminance of green OLED doesn't decrease until 2,000 hours. As a results, proposed encapsulation technique can increase the life time of green OLED.

Facile design and stabilization of a novel one-dimensional silicon-based photonic crystal microcavity

NASA Astrophysics Data System (ADS)

Salem, Mohamed Shaker; Ibrahim, Shaimaa Moustafa; Amin, Mohamed

2017-07-01

A novel silicon-based optical microcavity composed of a defect layer sandwiched between two parallel rugate mirrors is created by the electrochemical anodization of silicon in a hydrofluoric acid-based electrolyte using a precisely controlled current density profile. The profile consists of two sinusoidally modulated current waveforms separated by a fixed current that is applied to produce a defect layer between the mirrors. The spectral response of the rugate-based microcavity is simulated using the transfer matrix method and compared to the conventional Bragg-based microcavity. It is found that the resonance position of both microcavities is unchanged. However, the rugate-based microcavity exhibits a distinct reduction of the sidebands' intensity. Further attenuation of the sidebands' intensity is obtained by creating refractive index matching layers with optimized thickness at the bottom and top of the rugate-based microcavity. In order to stabilize the produced microcavity against natural oxidation, atomic layer deposition of an ultra-thin titanium dioxide layer on the pore wall is carried out followed by thermal annealing. The microcavity resonance position shows an observable sensitivity to the deposition and annealing processes.

Functionalization of silicon oxide using supercritical fluid deposition of 3,4-epoxybutyltrimethoxysilane for the immobilization of amino-modified oligonucleotide

NASA Astrophysics Data System (ADS)

Rull, Jordi; Nonglaton, Guillaume; Costa, Guillaume; Fontelaye, Caroline; Marchi-Delapierre, Caroline; Ménage, Stéphane; Marchand, Gilles

2015-11-01

The functionalization of silicon oxide based substrates using silanes is generally performed through liquid phase methodologies. These processes involve a huge quantity of potentially toxic solvents and present some important disadvantages for the functionalization of microdevices or porous materials, for example the low diffusion. To overcome this drawback, solvent-free methodologies like molecular vapor deposition (MVD) or supercritical fluid deposition (SFD) have been developed. In this paper, the deposition process of 3,4-epoxybutyltrimethoxysilane (EBTMOS) on silicon oxide using supercritical carbon dioxide (scCO2) as a solvent is studied for the first time. The oxirane ring of epoxy silanes readily reacts with amine group and is of particular interest for the grafting of amino-modified oligonucleotides or antibodies for diagnostic application. Then the ability of this specific EBTMOS layer to react with amine functions has been evaluated using the immobilization of amino-modified oligonucleotide probes. The presence of the probes is revealed by fluorescence using hybridization with a fluorescent target oligonucleotide. The performances of SFD of EBTMOS have been optimized and then compared with the dip coating and molecular vapor deposition methods, evidencing a better grafting efficiency and homogeneity, a lower reaction time in addition to the eco-friendly properties of the supercritical carbon dioxide. The epoxysilane layers have been characterized by surface enhanced ellipsometric contrast optical technique, atomic force microscopy, multiple internal reflection infrared spectroscopy and X-ray photoelectron spectroscopy. The shelf life of the 3,4-epoxybutyltrimethoxysilane coating layer has also been studied. Finally, two different strategies of NH2-oligonucleotide grafting on EBTMOS coating layer have been compared, i.e. reductive amination and nucleophilic substitution, SN2. This EBTMOS based coating layer can be used for a wide range of applications such as the preparation of new supported and recoverable catalysts and new integrated silicon microdevices for healthcare purposes.

The study of surface acoustic wave charge transfer device

NASA Technical Reports Server (NTRS)

Papanicolaou, N.; Lin, H. C.

1978-01-01

A surface acoustic wave-charge transfer device, consisting of an n-type silicon substrate, a thermally grown silicon dioxide layer, and a sputtered film of piezoelectric zinc oxide is proposed as a means of circumventing problems associated with charge-coupled device (CCD) applications in memory, signal processing, and imaging. The proposed device creates traveling longitudinal electric fields in the silicon and replaces the multiphase clocks in CCD's. The traveling electric fields create potential wells which carry along charges stored there. These charges may be injected into the wells by light or by using a p-n junction as in conventional CCD's.

Material Analysis of Coated Siliconized Silicon Carbide (SiSiC) Honeycomb Structures for Thermochemical Hydrogen Production

PubMed Central

Neises-von Puttkamer, Martina; Simon, Heike; Schmücker, Martin; Roeb, Martin; Sattler, Christian; Pitz-Paal, Robert

2013-01-01

In the present work, thermochemical water splitting with siliconized silicon carbide (SiSiC) honeycombs coated with a zinc ferrite redox material was investigated. The small scale coated monoliths were tested in a laboratory test-rig and characterized by X-ray diffractometry (XRD) and Scanning Electron Microscopy (SEM) with corresponding micro analysis after testing in order to characterize the changes in morphology and composition. Comparison of several treated monoliths revealed the formation of various reaction products such as SiO2, zircon (ZrSiO4), iron silicide (FeSi) and hercynite (FeAl2O4) indicating the occurrence of various side reactions between the different phases of the coating as well as between the coating and the SiSiC substrate. The investigations showed that the ferrite is mainly reduced through reaction with silicon (Si), which is present in the SiSiC matrix, and silicon carbide (SiC). These results led to the formulation of a new redox mechanism for this system in which Zn-ferrite is reduced through Si forming silicon dioxide (SiO2) and through SiC forming SiO2 and carbon monoxide. A decline of hydrogen production within the first 20 cycles is suggested to be due to the growth of a silicon dioxide and zircon layer which acts as a diffusion barrier for the reacting specie. PMID:28809316

Material Analysis of Coated Siliconized Silicon Carbide (SiSiC) Honeycomb Structures for Thermochemical Hydrogen Production.

PubMed

Neises-von Puttkamer, Martina; Simon, Heike; Schmücker, Martin; Roeb, Martin; Sattler, Christian; Pitz-Paal, Robert

2013-01-31

In the present work, thermochemical water splitting with siliconized silicon carbide (SiSiC) honeycombs coated with a zinc ferrite redox material was investigated. The small scale coated monoliths were tested in a laboratory test-rig and characterized by X-ray diffractometry (XRD) and Scanning Electron Microscopy (SEM) with corresponding micro analysis after testing in order to characterize the changes in morphology and composition. Comparison of several treated monoliths revealed the formation of various reaction products such as SiO₂, zircon (ZrSiO₄), iron silicide (FeSi) and hercynite (FeAl₂O₄) indicating the occurrence of various side reactions between the different phases of the coating as well as between the coating and the SiSiC substrate. The investigations showed that the ferrite is mainly reduced through reaction with silicon (Si), which is present in the SiSiC matrix, and silicon carbide (SiC). These results led to the formulation of a new redox mechanism for this system in which Zn-ferrite is reduced through Si forming silicon dioxide (SiO₂) and through SiC forming SiO₂ and carbon monoxide. A decline of hydrogen production within the first 20 cycles is suggested to be due to the growth of a silicon dioxide and zircon layer which acts as a diffusion barrier for the reacting specie.

Comparative study of solution-phase and vapor-phase deposition of aminosilanes on silicon dioxide surfaces.

PubMed

Yadav, Amrita R; Sriram, Rashmi; Carter, Jared A; Miller, Benjamin L

2014-02-01

The uniformity of aminosilane layers typically used for the modification of hydroxyl bearing surfaces such as silicon dioxide is critical for a wide variety of applications, including biosensors. However, in spite of many studies that have been undertaken on surface silanization, there remains a paucity of easy-to-implement deposition methods reproducibly yielding smooth aminosilane monolayers. In this study, solution- and vapor-phase deposition methods for three aminoalkoxysilanes differing in the number of reactive groups (3-aminopropyl triethoxysilane (APTES), 3-aminopropyl methyl diethoxysilane (APMDES) and 3-aminopropyl dimethyl ethoxysilane (APDMES)) were assessed with the aim of identifying methods that yield highly uniform and reproducible silane layers that are resistant to minor procedural variations. Silane film quality was characterized based on measured thickness, hydrophilicity and surface roughness. Additionally, hydrolytic stability of the films was assessed via these thickness and contact angle values following desorption in water. We found that two simple solution-phase methods, an aqueous deposition of APTES and a toluene based deposition of APDMES, yielded high quality silane layers that exhibit comparable characteristics to those deposited via vapor-phase methods. Copyright © 2013 Elsevier B.V. All rights reserved.

Process for Smoothing an Si Substrate after Etching of SiO2

NASA Technical Reports Server (NTRS)

Turner, Tasha; Wu, Chi

2003-01-01

A reactive-ion etching (RIE) process for smoothing a silicon substrate has been devised. The process is especially useful for smoothing those silicon areas that have been exposed by etching a pattern of holes in a layer of silicon dioxide that covers the substrate. Applications in which one could utilize smooth silicon surfaces like those produced by this process include fabrication of optical waveguides, epitaxial deposition of silicon on selected areas of silicon substrates, and preparation of silicon substrates for deposition of adherent metal layers. During etching away of a layer of SiO2 that covers an Si substrate, a polymer becomes deposited on the substrate, and the substrate surface becomes rough (roughness height approximately equal to 50 nm) as a result of over-etching or of deposition of the polymer. While it is possible to smooth a silicon substrate by wet chemical etching, the undesired consequences of wet chemical etching can include compromising the integrity of the SiO2 sidewalls and undercutting of the adjacent areas of the silicon dioxide that are meant to be left intact. The present RIE process results in anisotropic etching that removes the polymer and reduces height of roughness of the silicon substrate to less than 10 nm while leaving the SiO2 sidewalls intact and vertical. Control over substrate versus sidewall etching (in particular, preferential etching of the substrate) is achieved through selection of process parameters, including gas flow, power, and pressure. Such control is not uniformly and repeatably achievable in wet chemical etching. The recipe for the present RIE process is the following: Etch 1 - A mixture of CF4 and O2 gases flowing at rates of 25 to 75 and 75 to 125 standard cubic centimeters per minute (stdcm3/min), respectively; power between 44 and 55 W; and pressure between 45 and 55 mtorr (between 6.0 and 7.3 Pa). The etch rate lies between approximately equal to 3 and approximately equal to 6 nm/minute. Etch 2 - O2 gas flowing at 75 to 125 stdcm3/min, power between 44 and 55 W, and pressure between 50 and 100 mtorr (between 6.7 and 13.3 Pa).

Fabrication of TiO2 nanostructures on porous silicon for thermoelectric application

NASA Astrophysics Data System (ADS)

Fahrizal, F. N.; Ahmad, M. K.; Ramli, N. M.; Ahmad, N.; Fakhriah, R.; Mohamad, F.; Nafarizal, N.; Soon, C. F.; Ameruddin, A. S.; Faridah, A. B.; Shimomura, M.; Murakami, K.

2017-09-01

Nowadays, technology is moving by leaps and bounds over the last several decades. This has created new opportunities and challenge in the research fields. In this study, the experiment is about to investigate the potential of Titanium Dioxide (TiO2) nanostructures that have been growth onto a layer of porous silicon (pSi) for their thermoelectric application. Basically, it is divided into two parts, which is the preparation of the porous silicon (pSi) substrate by electrochemical-etching process and the growth of the Titanium Dioxide (TiO2) nanostructures by hydrothermal method. This sample have been characterize by Field Emission Scanning Electron Microscopy (FESEM) to visualize the morphology of the TiO2 nanostructures area that formed onto the porous silicon (pSi) substrate. Besides, the sample is also used to visualize their cross-section images under the FESEM microscopy. Next, the sample is characterized by the X-Ray Diffraction (XRD) machine. The XRD machine is used to get the information about the chemical composition, crystallographic structure and physical properties of materials.

‘Reliability of new poly (lactic-co-glycolic acid) membranes treated with oxygen plasma plus silicon dioxide layers for pre-prosthetic guided bone regeneration processes’

PubMed Central

Castillo-Dalí, Gabriel; Batista-Cruzado, Antonio; López-Santos, Carmen; Rodríguez-González-Elipe, Agustín; Saffar, Jean-Louis; Lynch, Christopher D.; Gutiérrez-Pérez, José-Luis; Torres-Lagares, Daniel

2017-01-01

Background The use of cold plasmas may improve the surface roughness of poly(lactic-co-glycolic) acid (PLGA) membranes, which may stimulate the adhesion of osteogenic mediators and cells, thus accelerating the biodegradation of the barriers. Moreover, the incorporation of metallic-oxide particles to the surface of these membranes may enhance their osteoinductive capacity. Therefore, the aim of this paper was to evaluate the reliability of a new PLGA membrane after being treated with oxygen plasma (PO2) plus silicon dioxide (SiO2) layers for guided bone regeneration (GBR) processes. Material and Methods Circumferential bone defects (diameter: 11 mm; depth: 3 mm) were created on the top of eight experimentation rabbits’ skulls and were randomly covered with: (1) PLGA membranes (control), or (2) PLGA/PO2/SiO2 barriers. The animals were euthanized two months afterwards. A micromorphologic study was then performed using ROI (region of interest) colour analysis. Percentage of new bone formation, length of mineralised bone, concentration of osteoclasts, and intensity of ostheosynthetic activity were assessed and compared with those of the original bone tissue. The Kruskal-Wallis test was applied for between-group com Asignificance level of a=0.05 was considered. Results The PLGA/PO2/SiO2 membranes achieved the significantly highest new bone formation, length of mineralised bone, concentration of osteoclasts, and ostheosynthetic activity. The percentage of regenerated bone supplied by the new membranes was similar to that of the original bone tissue. Unlike what happened in the control group, PLGA/PO2/SiO2 membranes predominantly showed bone layers in advanced stages of formation. Conclusions The addition of SiO2 layers to PLGA membranes pre-treated with PO2 improves their bone-regeneration potential. Although further research is necessary to corroborate these conclusions in humans, this could be a promising strategy to rebuild the bone architecture prior to rehabilitate edentulous areas. Key words:Guided bone regeneration (GBR), poly(lactic-co-glycolic acid) (PLGA), membrane; oxygen plasma (PO2), nanocomposite, silicon dioxide layers. PMID:28160588

Producing thin film photovoltaic modules with high integrity interconnects and dual layer contacts

DOEpatents

Jansen, Kai W.; Maley, Nagi

2000-01-01

High performance photovoltaic modules are produced with improved interconnects by a special process. Advantageously, the photovoltaic modules have a dual layer back (rear) contact and a front contact with at least one layer. The front contact and the inner layer of the back contact can comprise a transparent conductive oxide. The outer layer of the back contact can comprise a metal or metal oxide. The front contact can also have a dielectric layer. In one form, the dual layer back contact comprises a zinc oxide inner layer and an aluminum outer layer and the front contact comprises a tin oxide inner layer and a silicon dioxide dielectric outer layer. One or more amorphous silicon-containing thin film semiconductors can be deposited between the front and back contacts. The contacts can be positioned between a substrate and an optional superstrate. During production, the transparent conductive oxide layer of the front contact is scribed by a laser, then the amorphous silicon-containing semiconductors and inner layer of the dual layer back contact are simultaneously scribed and trenched (drilled) by the laser and the trench is subsequently filled with the same metal as the outer layer of the dual layer back contact to provide a superb mechanical and electrical interconnect between the front contact and the outer layer of the dual layer back contact. The outer layer of the dual layer back contact can then be scribed by the laser. For enhanced environmental protection, the photovoltaic modules can be encapsulated.

Producing thin film photovoltaic modules with high integrity interconnects and dual layer contacts

DOEpatents

Jansen, Kai W.; Maley, Nagi

2001-01-01

High performance photovoltaic modules are produced with improved interconnects by a special process. Advantageously, the photovoltaic modules have a dual layer back (rear) contact and a front contact with at least one layer. The front contact and the inner layer of the back contact can comprise a transparent conductive oxide. The outer layer of the back contact can comprise a metal or metal oxide. The front contact can also have a dielectric layer. In one form, the dual layer back contact comprises a zinc oxide inner layer and an aluminum outer layer and the front contact comprises a tin oxide inner layer and a silicon dioxide dielectric outer layer. One or more amorphous silicon-containing thin film semiconductors can be deposited between the front and back contacts. The contacts can be positioned between a substrate and an optional superstrate. During production, the transparent conductive oxide layer of the front contact is scribed by a laser, then the amorphous silicon-containing semiconductors and inner layer of the dual layer back contact are simultaneously scribed and trenched (drilled) by the laser and the trench is subsequently filled with the same metal as the outer layer of the dual layer back contact to provide a superb mechanical and electrical interconnect between the front contact and the outer layer of the dual layer back contact. The outer layer of the dual layer back contact can then be scribed by the laser. For enhanced environmental protection, the photovoltaic modules can be encapsulated.

Application of amorphous carbon based materials as antireflective coatings on crystalline silicon solar cells

NASA Astrophysics Data System (ADS)

da Silva, D. S.; Côrtes, A. D. S.; Oliveira, M. H.; Motta, E. F.; Viana, G. A.; Mei, P. R.; Marques, F. C.

2011-08-01

We report on the investigation of the potential application of different forms of amorphous carbon (a-C and a-C:H) as an antireflective coating for crystalline silicon solar cells. Polymeric-like carbon (PLC) and hydrogenated diamond-like carbon films were deposited by plasma enhanced chemical vapor deposition. Tetrahedral amorphous carbon (ta-C) was deposited by the filtered cathodic vacuum arc technique. Those three different amorphous carbon structures were individually applied as single antireflective coatings on conventional (polished and texturized) p-n junction crystalline silicon solar cells. Due to their optical properties, good results were also obtained for double-layer antireflective coatings based on PLC or ta-C films combined with different materials. The results are compared with a conventional tin dioxide (SnO2) single-layer antireflective coating and zinc sulfide/magnesium fluoride (ZnS/MgF2) double-layer antireflective coatings. An increase of 23.7% in the short-circuit current density, Jsc, was obtained using PLC as an antireflective coating and 31.7% was achieved using a double-layer of PLC with a layer of magnesium fluoride (MgF2). An additional increase of 10.8% was obtained in texturized silicon, representing a total increase (texturization + double-layer) of about 40% in the short-circuit current density. The potential use of these materials are critically addressed considering their refractive index, optical bandgap, absorption coefficient, hardness, chemical inertness, and mechanical stability.

Wet-chemical dissolution of TRISO-coated simulated high-temperature-reactor fuel particles

NASA Astrophysics Data System (ADS)

Skolo, K. P.; Jacobs, P.; Venter, J. H.; Klopper, W.; Crouse, P. L.

2012-01-01

Chemical etching with different mixtures of acidic solutions has been investigated to disintegrate the two outermost coatings from tri-structural isotropic coated particles containing zirconia kernels, which are used in simulated particles instead of uranium dioxide. A scanning electron microscope (SEM) was used to study the morphology of the particles after the first etching step as well as at different stages of the second etching step. SEM examination shows that the outer carbon layer can be readily removed with a CrO 3-HNO 3/H 2SO 4 solution. This finding was verified by energy dispersive spectroscopy (EDS) analysis. Etching of the silicon carbide layer in a hydrofluoric-nitric solution yielded partial removal of the coating and localized attack of the underlying coating layers. The SEM results provide evidence that the etching of the silicon carbide layer is strongly influenced by its microstructure.

Supercritical Carbon Dioxide-Assisted Process for Well-Dispersed Silicon/Graphene Composite as a Li ion Battery Anode.

PubMed

Lee, Sang Ha; Park, Sengyoen; Kim, Min; Yoon, Dohyeon; Chanthad, Chalathorn; Cho, Misuk; Kim, Jaehoon; Park, Jong Hyeok; Lee, Youngkwan

2016-08-18

The silicon (Si)/graphene composite has been touted as one of the most promising anode materials for lithium ion batteries. However, the optimal fabrication method for this composite remains a challenge. Here, we developed a novel method using supercritical carbon dioxide (scCO2) to intercalate Si nanoparticles into graphene nanosheets. Silicon was modified with a thin layer of polyaniline, which assisted the dispersion of graphene sheets by introducing π-π interaction. Using scCO2, well-dispersed Si/graphene composite was successfully obtained in a short time under mild temperature. The composite showed high cycle performance (1,789 mAh/g after 250 cycles) and rate capability (1,690 mAh/g at a current density of 4,000 mA/g). This study provides a new approach for cost-effective and scalable preparation of a Si/graphene composite using scCO2 for a highly stable lithium battery anode material.

Supercritical Carbon Dioxide-Assisted Process for Well-Dispersed Silicon/Graphene Composite as a Li ion Battery Anode

PubMed Central

Lee, Sang Ha; Park, Sengyoen; Kim, Min; Yoon, Dohyeon; Chanthad, Chalathorn; Cho, Misuk; Kim, Jaehoon; Park, Jong Hyeok; Lee, Youngkwan

2016-01-01

The silicon (Si)/graphene composite has been touted as one of the most promising anode materials for lithium ion batteries. However, the optimal fabrication method for this composite remains a challenge. Here, we developed a novel method using supercritical carbon dioxide (scCO2) to intercalate Si nanoparticles into graphene nanosheets. Silicon was modified with a thin layer of polyaniline, which assisted the dispersion of graphene sheets by introducing π-π interaction. Using scCO2, well-dispersed Si/graphene composite was successfully obtained in a short time under mild temperature. The composite showed high cycle performance (1,789 mAh/g after 250 cycles) and rate capability (1,690 mAh/g at a current density of 4,000 mA/g). This study provides a new approach for cost-effective and scalable preparation of a Si/graphene composite using scCO2 for a highly stable lithium battery anode material. PMID:27535108

Resolving the nanostructure of plasma-enhanced chemical vapor deposited nanocrystalline SiOx layers for application in solar cells

NASA Astrophysics Data System (ADS)

Klingsporn, M.; Kirner, S.; Villringer, C.; Abou-Ras, D.; Costina, I.; Lehmann, M.; Stannowski, B.

2016-06-01

Nanocrystalline silicon suboxides (nc-SiOx) have attracted attention during the past years for the use in thin-film silicon solar cells. We investigated the relationships between the nanostructure as well as the chemical, electrical, and optical properties of phosphorous, doped, nc-SiO0.8:H fabricated by plasma-enhanced chemical vapor deposition. The nanostructure was varied through the sample series by changing the deposition pressure from 533 to 1067 Pa. The samples were then characterized by X-ray photoelectron spectroscopy, spectroscopic ellipsometry, Raman spectroscopy, aberration-corrected high-resolution transmission electron microscopy, selected-area electron diffraction, and a specialized plasmon imaging method. We found that the material changed with increasing pressure from predominantly amorphous silicon monoxide to silicon dioxide containing nanocrystalline silicon. The nanostructure changed from amorphous silicon filaments to nanocrystalline silicon filaments, which were found to cause anisotropic electron transport.

Solar cell circuit and method for manufacturing solar cells

NASA Technical Reports Server (NTRS)

Mardesich, Nick (Inventor)

2010-01-01

The invention is a novel manufacturing method for making multi-junction solar cell circuits that addresses current problems associated with such circuits by allowing the formation of integral diodes in the cells and allows for a large number of circuits to readily be placed on a single silicon wafer substrate. The standard Ge wafer used as the base for multi-junction solar cells is replaced with a thinner layer of Ge or a II-V semiconductor material on a silicon/silicon dioxide substrate. This allows high-voltage cells with multiple multi-junction circuits to be manufactured on a single wafer, resulting in less array assembly mass and simplified power management.

Thermal degradation study of silicon carbide threads developed for advanced flexible thermal protection systems

NASA Technical Reports Server (NTRS)

Tran, Huy Kim; Sawko, Paul M.

1992-01-01

Silicon carbide (SiC) fiber is a material that may be used in advanced thermal protection systems (TPS) for future aerospace vehicles. SiC fiber's mechanical properties depend greatly on the presence or absence of sizing and its microstructure. In this research, silicon dioxide is found to be present on the surface of the fiber. Electron Spectroscopy for Chemical Analysis (ESCA) and Scanning Electron Microscopy (SEM) show that a thin oxide layer (SiO2) exists on the as-received fibers, and the oxide thickness increases when the fibers are exposed to high temperature. ESCA also reveals no evidence of Si-C bonding on the fiber surface on both as-received and heat treated fibers. The silicon oxide layer is thought to signal the decomposition of SiC bonds and may be partially responsible for the degradation in the breaking strength observed at temperatures above 400 C. The variation in electrical resistivity of the fibers with increasing temperature indicates a transition to a higher band gap material at 350 to 600 C. This is consistent with a decomposition of SiC involving silicon oxide formation.

Transmission of Free Radicals through and Damage to Freestanding Single and Multilayer Dielectric Film

NASA Astrophysics Data System (ADS)

Choudhury, Faraz Anwar

A high concentration of free radicals is present in many processing plasmas, which affects the processing conditions and the properties of materials exposed to the plasma. Measuring the types and concentrations of free radicals present in the plasma is critical in order to determine their effects on the materials being processed. Current methods for detecting free radicals in a plasma require multiple expensive and bulky instruments, complex setups and often modifications to the plasma reactor. In this work, we present a simple technique that detects reactive-oxygen radicals incident on a surface from a plasma. The measurements are made using a fluorophore dye that is commonly used in biological and cellular systems for assay labeling in liquids. Using fluorometric analysis, it was found that the fluorophore reacts with oxygen radicals incident from the plasma, which is indicated by degradation of its fluorescence. As plasma power was increased, the quenching of the fluorescence significantly increased. Both immobilized and non-immobilized fluorophore dyes were used and the results indicate that both states function effectively under vacuum conditions. Using radical-sensitive dyes and free-standing films, the transmission of oxygen radicals through silicon nitride and silicon dioxide dielectric films is measured and their absorption lengths are determined. The absorption lengths were found to be 33, 37 and 40 nm for 15, 30 and 45-minute oxygen plasma exposures respectively. FTIR and XRR measurements show that a silicon oxynitride-like layer forms on the surface of the film which has a lower density than silicon nitride. The increase in absorption length with plasma-exposure time is attributed to the formation of the surface layer. In silicon dioxide films, the absorption length of oxygen radicals was found to be 70 nm after 20 minutes of plasma exposure. After 30 minutes of plasma exposure under the same conditions, the absorption length was reduced to 66 nm. XRR and FTIR measurements both reveal that the oxygen plasma exposure leads to surface oxidation of the silicon dioxide film and the formation of a denser surface layer which restricts the transmission of the radicals through the film. It was found that the extent of modification of the film partially depends on the radical dose. The calculated enthalpies of the reactions show that they are all exothermic reactions, however, the radicals need enough energy to overcome the activation energy for the reaction to take place.

Effects of supercritical carbon dioxide on immobile bound polymer chains on solid substrates

NASA Astrophysics Data System (ADS)

Sen, Mani; Asada, Mitsunori; Jiang, Naisheng; Endoh, Maya K.; Akgun, Bulent; Satija, Sushil; Koga, Tadanori

2013-03-01

Adsorbed polymer layers formed on flat solid substrates have recently been the subject of extensive studies because it is postulated to control the dynamics of technologically relevant polymer thin films, for example, in lithography. Such adsorbed layers have been reported to hinder the mobility of polymer chains in thin films even at a large length scale. Consequently, this bound layer remains immobile regardless of processing techniques (i.e. thermal annealing, solvent dissolution, etc). Here, we investigate the use of supercritical carbon dioxide (scCO2) as a novel plasticizer for bound polystyrene layers formed on silicon substrates. In-situ swelling and interdiffusion experiments using neutron reflectivity were performed. As a result, we found the anomalous plasticization effects of scCO2 on the bound polymer layers near the critical point where the anomalous adsorption of CO2 molecules in polymer thin films has been reported previously. Acknowledgement: We acknowledge the financial support from NSF Grant No. CMMI-084626.

Microscale Self-Assembled Electrical Contacts

DTIC Science & Technology

2007-09-01

silicon dioxide (SiO2) prevents the alloy from wetting the rest of the substrate, causing it to “ dewet .” We performed dip coating for the higher...The templates in figures 11 and 12 had a 150 nm Pt layer instead of Ni, because the alloy dewetted from Ni after a few minutes. Such dewetting ...respect to the alloy, which drives dewetting . In another study (38), dewetting of pure Sn on a Cu/Cr metal layer was observed, indicating that similar

Characterization of a New Organosilicon Photoresist

NASA Astrophysics Data System (ADS)

Cunningham, Wells C.

1987-08-01

For a number of years, there has lo'ep. great interest in organometallic based photoresists for use as the top layer in multilevel resist schemes.-' In general, bilevel approaches to lithography are forced upon the industry as a means of planarizing topography for a subsequent patterning step. This pattern is initially defined by exposure and development of a thin top layer (0.3 to 0.5μm) over the thicker bottom layer (1.0 to 2.0μm). (See Figure 1). In a conventional bilevel approach, the chosen bottom layer is photoactive at a wavelength for which the top is relatively opaque. The top level acts as a portable conformable mask (PCM) for image transfer through the bottom layer after its exposure and wet development. By using a silicon containing photoresist on the top image transfer may be accomplished using an oxygen plasma instead of a second exposure and development. The PCM in this case acts as an etch mask by forming a silicon dioxide crust in the plasma which slows the etch rate of the top versus the bottom layer. A generic curve of etch rate of a photoresist versus percent silicon by weight is shown in Figure 2. The shape is similar over a wide range of organosilicon polymers.5,6

Processing of n+/p-/p+ strip detectors with atomic layer deposition (ALD) grown Al2O3 field insulator on magnetic Czochralski silicon (MCz-si) substrates

NASA Astrophysics Data System (ADS)

Härkönen, J.; Tuovinen, E.; Luukka, P.; Gädda, A.; Mäenpää, T.; Tuominen, E.; Arsenovich, T.; Junkes, A.; Wu, X.; Li, Z.

2016-08-01

Detectors manufactured on p-type silicon material are known to have significant advantages in very harsh radiation environment over n-type detectors, traditionally used in High Energy Physics experiments for particle tracking. In p-type (n+ segmentation on p substrate) position-sensitive strip detectors, however, the fixed oxide charge in the silicon dioxide is positive and, thus, causes electron accumulation at the Si/SiO2 interface. As a result, unless appropriate interstrip isolation is applied, the n-type strips are short-circuited. Widely adopted methods to terminate surface electron accumulation are segmented p-stop or p-spray field implantations. A different approach to overcome the near-surface electron accumulation at the interface of silicon dioxide and p-type silicon is to deposit a thin film field insulator with negative oxide charge. We have processed silicon strip detectors on p-type Magnetic Czochralski silicon (MCz-Si) substrates with aluminum oxide (Al2O3) thin film insulator, grown with Atomic Layer Deposition (ALD) method. The electrical characterization by current-voltage and capacitance-voltage measurement shows reliable performance of the aluminum oxide. The final proof of concept was obtained at the test beam with 200 GeV/c muons. For the non-irradiated detector the charge collection efficiency (CCE) was nearly 100% with a signal-to-noise ratio (S/N) of about 40, whereas for the 2×1015 neq/cm2 proton irradiated detector the CCE was 35%, when the sensor was biased at 500 V. These results are comparable with the results from p-type detectors with the p-spray and p-stop interstrip isolation techniques. In addition, interestingly, when the aluminum oxide was irradiated with Co-60 gamma-rays, an accumulation of negative fixed oxide charge in the oxide was observed.

Reliability and efficacy of organic passivation for polycrystalline silicon solar cells at room temperature

NASA Astrophysics Data System (ADS)

Shinde, Onkar S.; Funde, Adinath M.; Jadkar, Sandesh R.; Dusane, Rajiv O.; Dhere, Neelkanth G.; Ghaisas, Subhash V.

2016-09-01

Oleylamine is used as a passivating layer instead of commercial high temperature SiNx. Oleylamine coating applied on the n-type emitter side with p-type base polycrystalline silicon solar cells at room temperature using a simple spin coating method. It has been observed that there is 16% increase in efficiency after Oleylamine coating. Further, the solar cell was subjected to standard characterization namely current-voltage measurement for electrical parameters and Fourier transform infrared spectroscopy to understand the interaction of emitter surface and passivating Oleylamine. However, the passivation layer is not stable due to the reaction between Oleylamine and ambient air content such as humidity and carbon dioxide. This degradation can be prevented with suitable overcoating.

Initial Steps of Rubicene Film Growth on Silicon Dioxide.

PubMed

Scherwitzl, Boris; Lukesch, Walter; Hirzer, Andreas; Albering, Jörg; Leising, Günther; Resel, Roland; Winkler, Adolf

2013-02-28

The film growth of the conjugated organic molecule rubicene on silicon dioxide was studied in detail. Since no structural data of the condensed material were available, we first produced high quality single crystals from solution and determined the crystal structure. This high purity material was used to prepare ultrathin films under ultrahigh vacuum conditions, by physical vapor deposition. Thermal desorption spectroscopy (TDS) was applied to delineate the adsorption and desorption kinetics. It could be shown that the initial sticking coefficient is only 0.2 ± 0.05, but the sticking coefficient increases with increasing coverage. TDS further revealed that first a closed, weakly bound bilayer develops (wetting layer), which dewets after further deposition of rubicene, leading to an island-like layer. These islands are crystalline and exhibit the same structure as the solution grown crystals. The orientation of the crystallites is with the (001) plane parallel to the substrate. A dewetting of the closed bilayer was also observed when the film was exposed to air. Furthermore, Ostwald ripening of the island-like film takes place under ambient conditions, leading to films composed of few, large crystallites. From TDS, we determined the heat of evaporation from the multilayer islands to be 1.47 eV, whereas the desorption energy from the first layer is only 1.25 eV.

Initial Steps of Rubicene Film Growth on Silicon Dioxide

PubMed Central

2013-01-01

The film growth of the conjugated organic molecule rubicene on silicon dioxide was studied in detail. Since no structural data of the condensed material were available, we first produced high quality single crystals from solution and determined the crystal structure. This high purity material was used to prepare ultrathin films under ultrahigh vacuum conditions, by physical vapor deposition. Thermal desorption spectroscopy (TDS) was applied to delineate the adsorption and desorption kinetics. It could be shown that the initial sticking coefficient is only 0.2 ± 0.05, but the sticking coefficient increases with increasing coverage. TDS further revealed that first a closed, weakly bound bilayer develops (wetting layer), which dewets after further deposition of rubicene, leading to an island-like layer. These islands are crystalline and exhibit the same structure as the solution grown crystals. The orientation of the crystallites is with the (001) plane parallel to the substrate. A dewetting of the closed bilayer was also observed when the film was exposed to air. Furthermore, Ostwald ripening of the island-like film takes place under ambient conditions, leading to films composed of few, large crystallites. From TDS, we determined the heat of evaporation from the multilayer islands to be 1.47 eV, whereas the desorption energy from the first layer is only 1.25 eV. PMID:23476720

Graphene-Based Reversible Nano-Switch/Sensor Schottky Diode

NASA Technical Reports Server (NTRS)

Miranda, Felix A.; Meador, Michael A.; Theofylaktos, Onoufrios; Pinto, Nicholas J.; Mueller, Carl H.; Santos-Perez, Javier

2010-01-01

This proof-of-concept device consists of a thin film of graphene deposited on an electrodized doped silicon wafer. The graphene film acts as a conductive path between a gold electrode deposited on top of a silicon dioxide layer and the reversible side of the silicon wafer, so as to form a Schottky diode. By virtue of the two-dimensional nature of graphene, this device has extreme sensitivity to different gaseous species, thereby serving as a building block for a volatile species sensor, with the attribute of having reversibility properties. That is, the sensor cycles between active and passive sensing states in response to the presence or absence of the gaseous species.

Acousto-optical and SAW propagation characteristics of temperature stable multilayered structures based on LiNbO3 and diamond

NASA Astrophysics Data System (ADS)

Shandilya, Swati; Sreenivas, K.; Gupta, Vinay

2008-01-01

Theoretical studies on the surface acoustic wave (SAW) properties of c-axis oriented LiNbO3/IDT/diamond and diamond/IDT/128° rotated Y-X cut LiNbO3 multilayered structures have been considered. Both layered structures exhibit a positive temperature coefficient of delay (TCD) characteristic, and a zero TCD device is obtained after integrating with an over-layer of either tellurium dioxide (TeO2) or silicon dioxide (SiO2). The presence of a TeO2 over-layer enhanced the electromechanical coupling coefficients of both multilayered structures, which acts as a better temperature compensation layer than SiO2. The temperature stable TeO2/LiNbO3/IDT/diamond layered structure exhibits good electromechanical coefficient and higher phase velocity for SAW device applications. On the other hand, a high acousto-optical (AO) figure of merit (30-37) × 10-15 s3 kg-1 has been obtained for the temperature stable SiO2/diamond/IDT/LiNbO3 layered structure indicating a promising device structure for AO applications.

The importance of surface recombination and energy-bandgap narrowing in p-n-junction silicon solar cells

NASA Technical Reports Server (NTRS)

Fossum, J. G.; Lindholm, F. A.; Shibib, M. A.

1979-01-01

Experimental data demonstrating the sensitivity of open-circuit voltage to front-surface conditions are presented for a variety of p-n-junction silicon solar cells. Analytical models accounting for the data are defined and supported by additional experiments. The models and the data imply that a) surface recombination significantly limits the open-circuit voltage (and the short-circuit current) of typical silicon cells, and b) energy-bandgap narrowing is important in the manifestation of these limitations. The models suggest modifications in both the structural design and the fabrication processing of the cells that would result in substantial improvements in cell performance. The benefits of one such modification - the addition of a thin thermal silicon-dioxide layer on the front surface - are indicated experimentally.

21 CFR 573.940 - Silicon dioxide.

Code of Federal Regulations, 2011 CFR

2011-04-01

..., FEEDS, AND RELATED PRODUCTS FOOD ADDITIVES PERMITTED IN FEED AND DRINKING WATER OF ANIMALS Food Additive Listing § 573.940 Silicon dioxide. The food additive silicon dioxide may be safely used in animal feed in accordance with the following conditions: (a) The food additive is manufactured by vapor phase hydrolysis or...

21 CFR 573.940 - Silicon dioxide.

Code of Federal Regulations, 2012 CFR

2012-04-01

..., FEEDS, AND RELATED PRODUCTS FOOD ADDITIVES PERMITTED IN FEED AND DRINKING WATER OF ANIMALS Food Additive Listing § 573.940 Silicon dioxide. The food additive silicon dioxide may be safely used in animal feed in accordance with the following conditions: (a) The food additive is manufactured by vapor phase hydrolysis or...

21 CFR 573.940 - Silicon dioxide.

Code of Federal Regulations, 2013 CFR

2013-04-01

..., FEEDS, AND RELATED PRODUCTS FOOD ADDITIVES PERMITTED IN FEED AND DRINKING WATER OF ANIMALS Food Additive Listing § 573.940 Silicon dioxide. The food additive silicon dioxide may be safely used in animal feed in accordance with the following conditions: (a) The food additive is manufactured by vapor phase hydrolysis or...

21 CFR 573.940 - Silicon dioxide.

Code of Federal Regulations, 2010 CFR

2010-04-01

..., FEEDS, AND RELATED PRODUCTS FOOD ADDITIVES PERMITTED IN FEED AND DRINKING WATER OF ANIMALS Food Additive Listing § 573.940 Silicon dioxide. The food additive silicon dioxide may be safely used in animal feed in accordance with the following conditions: (a) The food additive is manufactured by vapor phase hydrolysis or...

21 CFR 573.940 - Silicon dioxide.

Code of Federal Regulations, 2014 CFR

2014-04-01

..., FEEDS, AND RELATED PRODUCTS FOOD ADDITIVES PERMITTED IN FEED AND DRINKING WATER OF ANIMALS Food Additive Listing § 573.940 Silicon dioxide. The food additive silicon dioxide may be safely used in animal feed in accordance with the following conditions: (a) The food additive is manufactured by vapor phase hydrolysis or...

Adhesion layer for etching of tracks in nuclear trackable materials

DOEpatents

Morse, Jeffrey D.; Contolini, Robert J.

2001-01-01

A method for forming nuclear tracks having a width on the order of 100-200 nm in nuclear trackable materials, such as polycarbonate (LEXAN) without causing delamination of the LEXAN. The method utilizes an adhesion film having a inert oxide which allows the track to be sufficiently widened to >200 nm without delamination of the nuclear trackable materials. The adhesion film may be composed of a metal such as Cr, Ni, Au, Pt, or Ti, or composed of a dielectric having a stable surface, such as silicon dioxide (SiO.sub.2), silicon nitride (SiN.sub.x), and aluminum oxide (AlO). The adhesion film can either be deposited on top of the gate metal layer, or if the properties of the adhesion film are adequate, it can be used as the gate layer. Deposition of the adhesion film is achieved by standard techniques, such as sputtering or evaporation.

Metallic impurities-silicon carbide interaction in HTGR fuel particles

NASA Astrophysics Data System (ADS)

Minato, Kazuo; Ogawa, Toru; Kashimura, Satoru; Fukuda, Kousaku; Shimizu, Michio; Tayama, Yoshinobu; Takahashi, Ishio

1990-12-01

Corrosion of the coating layers of silicon carbide (SiC) by metallic impurities was observed in irradiated Triso-coated uranium dioxide particles for high temperature gas-cooled reactors with an optical microscope and an electron probe micro-analyzer. The SiC layers were attacked from the outside of the particles. The main element observed in the corroded areas was iron, but sometimes iron and nickel were found. These elements must have been contained as impurities in the graphite matrix in which the coated particles were dispersed. Since these elements are more stable thermodynamically in the presence of SiC than in the presence of graphite at irradiation temperatures, they were transferred to the SiC layer to form more stable silicides. During fuel manufacturing processes, intensive care should be taken to prevent the fuel from being contaminated with those elements which react with SiC.

Powder containing 2H-type silicon carbide produced by reacting silicon dioxide and carbon powder in nitrogen atmosphere in the presence of aluminum

NASA Technical Reports Server (NTRS)

Kuramoto, N.; Takiguchi, H.

1984-01-01

The production of powder which contains silicon carbide consisting of 40% of 2H-type silicon carbide, beta type silicon carbide and less than 3% of nitrogen is discussed. The reaction temperature to produce the powder containing 40% of 2H-type silicon carbide is set at above 1550 degrees C in an atmosphere of aluminum or aluminum compounds and nitrogen gas or an antioxidation atmosphere containing nitrogen gas. The mixture ratio of silicon dioxide and carbon powder is 0.55 - 1:2.0 and the contents of aluminum or aluminum compounds within silicon dioxide is less than 3% in weight.

[Comparative study of nanosized and microsized silicon dioxide on spermatogenesis function of male rats].

PubMed

Fan, Yi-Ou; Zhang, Ying-Hua; Zhang, Xiao-Peng; Liu, Bing; Ma, Yi-xin; Jin, Yi-he

2006-09-01

To compare the effects of nanosized and microsized silicon dioxide on spermatogenesis function of male rats exposed by inhalation. 45 male rats were randomly divided into control group and four experimental groups which were exposed by 100 mg/m3 or 300 mg/m3 nanosized and microsized silicon dioxide in inhalation chambers 2 hours every other day. Age-matched rats were exposed to room air with the same condition and served as controls. 65 days later, the testicular and epididymal viscera coefficients, the quantity and quality of sperm were examined and the histopathological assessment was done. The changes in biochemical parameters in serum and testes were also measured. Nanosized silicon dioxide could induce histopathological changes of testes in rats, and the effect was higher than that of microsized particles at the same concentration. Nanosized silicon dioxide could reduce the sperm counts of rats and the testicular LDH-C4 activities, increase MDA levels in the testes and the effect was higher than that of microsized particles at the same concentration. Nanosized silicon dioxide could lead to the reduction of sperm motility, testicular LDH-C4 activities and 8-hydroxydeoxyguanosine (8-OHdG) concentration in serum elevation in particles-exposed rats compared with the control animals, but there are no significant difference compared with that of microsized particles at the same concentration. The present findings suggest a different effect of impairment of sperm production and maturation induced by inhalation of nanosized and microsized silicon dioxide, and nanosized silicon dioxide exerted more severe reaction.

Fabrication and Characterization of a Micro Methanol Sensor Using the CMOS-MEMS Technique.

PubMed

Fong, Chien-Fu; Dai, Ching-Liang; Wu, Chyan-Chyi

2015-10-23

A methanol microsensor integrated with a micro heater manufactured using the complementary metal oxide semiconductor (CMOS)-microelectromechanical system (MEMS) technique was presented. The sensor has a capability of detecting low concentration methanol gas. Structure of the sensor is composed of interdigitated electrodes, a sensitive film and a heater. The heater located under the interdigitated electrodes is utilized to provide a working temperature to the sensitive film. The sensitive film prepared by the sol-gel method is tin dioxide doped cadmium sulfide, which is deposited on the interdigitated electrodes. To obtain the suspended structure and deposit the sensitive film, the sensor needs a post-CMOS process to etch the sacrificial silicon dioxide layer and silicon substrate. The methanol senor is a resistive type. A readout circuit converts the resistance variation of the sensor into the output voltage. The experimental results show that the methanol sensor has a sensitivity of 0.18 V/ppm.

Fabrication and Characterization of a Micro Methanol Sensor Using the CMOS-MEMS Technique

PubMed Central

Fong, Chien-Fu; Dai, Ching-Liang; Wu, Chyan-Chyi

2015-01-01

A methanol microsensor integrated with a micro heater manufactured using the complementary metal oxide semiconductor (CMOS)-microelectromechanical system (MEMS) technique was presented. The sensor has a capability of detecting low concentration methanol gas. Structure of the sensor is composed of interdigitated electrodes, a sensitive film and a heater. The heater located under the interdigitated electrodes is utilized to provide a working temperature to the sensitive film. The sensitive film prepared by the sol-gel method is tin dioxide doped cadmium sulfide, which is deposited on the interdigitated electrodes. To obtain the suspended structure and deposit the sensitive film, the sensor needs a post-CMOS process to etch the sacrificial silicon dioxide layer and silicon substrate. The methanol senor is a resistive type. A readout circuit converts the resistance variation of the sensor into the output voltage. The experimental results show that the methanol sensor has a sensitivity of 0.18 V/ppm. PMID:26512671

Exploration of photosensitive polyimide as the modification layer in thin film microcircuit

NASA Astrophysics Data System (ADS)

Liu, Lily; Song, Changbin; Xue, Bin; Li, Jing; Wang, Junxi; Li, Jinmin

2018-02-01

Positive type photosensitive polyimide is used as the modification layer in the thin film transistors production process. The photosensitive polyimide is not only used as the second insulating layer, it can also be used instead of a mask because of the photosensitivity. A suitable curing condition can help photosensitive polyimide form the high performance polyimide with orderly texture inside, and the performance of imidization depends on the precise control of temperature, time, and heat control during the curing process. Therefore, experiments of different stepped up heating tests are made, and the ability of protecting silicon dioxide is analyzed.

Resolving the nanostructure of plasma-enhanced chemical vapor deposited nanocrystalline SiO{sub x} layers for application in solar cells

DOE Office of Scientific and Technical Information (OSTI.GOV)

Klingsporn, M.; Costina, I.; Kirner, S.

2016-06-14

Nanocrystalline silicon suboxides (nc-SiO{sub x}) have attracted attention during the past years for the use in thin-film silicon solar cells. We investigated the relationships between the nanostructure as well as the chemical, electrical, and optical properties of phosphorous, doped, nc-SiO{sub 0.8}:H fabricated by plasma-enhanced chemical vapor deposition. The nanostructure was varied through the sample series by changing the deposition pressure from 533 to 1067 Pa. The samples were then characterized by X-ray photoelectron spectroscopy, spectroscopic ellipsometry, Raman spectroscopy, aberration-corrected high-resolution transmission electron microscopy, selected-area electron diffraction, and a specialized plasmon imaging method. We found that the material changed with increasing pressuremore » from predominantly amorphous silicon monoxide to silicon dioxide containing nanocrystalline silicon. The nanostructure changed from amorphous silicon filaments to nanocrystalline silicon filaments, which were found to cause anisotropic electron transport.« less

Tribological properties of sintered polycrystalline and single crystal silicon carbide

NASA Technical Reports Server (NTRS)

Miyoshi, K.; Buckley, D. H.; Srinivasan, M.

1982-01-01

Tribological studies and X-ray photoelectron spectroscopy analyses were conducted with sintered polycrystalline and single crystal silicon carbide surfaces in sliding contact with iron at various temperatures to 1500 C in a vacuum of 30 nPa. The results indicate that there is a significant temperature influence on both the friction properties and the surface chemistry of silicon carbide. The main contaminants on the as received sintered polycrystalline silicon carbide surfaces are adsorbed carbon, oxygen, graphite, and silicon dioxide. The surface revealed a low coefficient of friction. This is due to the presence of the graphite on the surface. At temperatures of 400 to 600 C graphite and copious amount of silicon dioxide were observed on the polycrystalline silicon carbide surface in addition to silicon carbide. At 800 C, the amount of the silicon dioxide decreased rapidly and the silicon carbide type silicon and carbon peaks were at a maximum intensity in the XPS spectra. The coefficients of friction were high in the temperature range 400 to 800 C. Small amounts of carbon and oxygen contaminants were observed on the as received single crystal silicon carbide surface below 250 C. Silicon carbide type silicon and carbon peaks were seen on the silicon carbide in addition to very small amount of graphite and silicon dioxide at temperatures of 450 to 800 C.

Silicon Cations Intermixed Indium Zinc Oxide Interface for High-Performance Thin-Film Transistors Using a Solution Process.

PubMed

Na, Jae Won; Rim, You Seung; Kim, Hee Jun; Lee, Jin Hyeok; Hong, Seonghwan; Kim, Hyun Jae

2017-09-06

Solution-processed amorphous metal-oxide thin-film transistors (TFTs) utilizing an intermixed interface between a metal-oxide semiconductor and a dielectric layer are proposed. In-depth physical characterizations are carried out to verify the existence of the intermixed interface that is inevitably formed by interdiffusion of cations originated from a thermal process. In particular, when indium zinc oxide (IZO) semiconductor and silicon dioxide (SiO 2 ) dielectric layer are in contact and thermally processed, a Si 4+ intermixed IZO (Si/IZO) interface is created. On the basis of this concept, a high-performance Si/IZO TFT having both a field-effect mobility exceeding 10 cm 2 V -1 s -1 and a on/off current ratio over 10 7 is successfully demonstrated.

Patterning of Functional Antibodies and Other Proteins by Photolithography of Silane Monolayers

NASA Astrophysics Data System (ADS)

Mooney, J. F.; Hunt, A. J.; McIntosh, J. R.; Liberko, C. A.; Walba, D. M.; Rogers, C. T.

1996-10-01

We have demonstrated the assembly of two-dimensional patterns of functional antibodies on a surface. In particular, we have selectively adsorbed micrometer-scale regions of biotinylated immunoglobulin that exhibit specific antigen binding after adsorption. The advantage of this technique is its potential adaptability to adsorbing arbitrary proteins in tightly packed monolayers while retaining functionality. The procedure begins with the formation of a self-assembled monolayer of n-octadecyltrimethoxysilane (OTMS) on a silicon dioxide surface. This monolayer can then be selectively removed by UV photolithography. Under appropriate solution conditions, the OTMS regions will adsorb a monolayer of bovine serum albumin (BSA), while the silicon dioxide regions where the OTMS has been removed by UV light will adsorb less than 2% of a monolayer, thus creating high contrast patterned adsorption of BSA. The attachment of the molecule biotin to the BSA allows the pattern to be replicated in a layer of streptavidin, which bonds to the biotinylated BSA and in turn will bond an additional layer of an arbitrary biotinylated protein. In our test case, functionality of the biotinylated goat antibodies raised against mouse immunoglobulin was demonstrated by the specific binding of fluorescently labeled mouse IgG.

Millimeter-Wave Wireless Power Transfer Technology for Space Applications

NASA Technical Reports Server (NTRS)

Chattopadhyay, Goutam; Manohara, Harish; Mojarradi, Mohammad M.; Vo, Tuan A.; Mojarradi, Hadi; Bae, Sam Y.; Marzwell, Neville

2008-01-01

In this paper we present a new compact, scalable, and low cost technology for efficient receiving of power using RF waves at 94 GHz. This technology employs a highly innovative array of slot antennas that is integrated on substrate composed of gold (Au), silicon (Si), and silicon dioxide (SiO2) layers. The length of the slots and spacing between them are optimized for a highly efficient beam through a 3-D electromagnetic simulation process. Antenna simulation results shows a good beam profile with very low side lobe levels and better than 93% antenna efficiency.

A sub-atmospheric chemical vapor deposition process for deposition of oxide liner in high aspect ratio through silicon vias.

PubMed

Lisker, Marco; Marschmeyer, Steffen; Kaynak, Mehmet; Tekin, Ibrahim

2011-09-01

The formation of a Through Silicon Via (TSV) includes a deep Si trench etching and the formation of an insulating layer along the high-aspect-ratio trench and the filling of a conductive material into the via hole. The isolation of the filling conductor from the silicon substrate becomes more important for higher frequencies due to the high coupling of the signal to the silicon. The importance of the oxide thickness on the via wall isolation can be verified using electromagnetic field simulators. To satisfy the needs on the Silicon dioxide deposition, a sub-atmospheric chemical vapor deposition (SA-CVD) process has been developed to deposit an isolation oxide to the walls of deep silicon trenches. The technique provides excellent step coverage of the 100 microm depth silicon trenches with the high aspect ratio of 20 and more. The developed technique allows covering the deep silicon trenches by oxide and makes the high isolation of TSVs from silicon substrate feasible which is the key factor for the performance of TSVs for mm-wave 3D packaging.

Electrodeposition of molten silicon

DOEpatents

De Mattei, Robert C.; Elwell, Dennis; Feigelson, Robert S.

1981-01-01

Silicon dioxide is dissolved in a molten electrolytic bath, preferably comprising barium oxide and barium fluoride. A direct current is passed between an anode and a cathode in the bath to reduce the dissolved silicon dioxide to non-alloyed silicon in molten form, which is removed from the bath.

Electron irradiation induced amorphous SiO2 formation at metal oxide/Si interface at room temperature; electron beam writing on interfaces.

PubMed

Gurbán, S; Petrik, P; Serényi, M; Sulyok, A; Menyhárd, M; Baradács, E; Parditka, B; Cserháti, C; Langer, G A; Erdélyi, Z

2018-02-01

Al 2 O 3 (5 nm)/Si (bulk) sample was subjected to irradiation of 5 keV electrons at room temperature, in a vacuum chamber (pressure 1 × 10 -9 mbar) and formation of amorphous SiO 2 around the interface was observed. The oxygen for the silicon dioxide growth was provided by the electron bombardment induced bond breaking in Al 2 O 3 and the subsequent production of neutral and/or charged oxygen. The amorphous SiO 2 rich layer has grown into the Al 2 O 3 layer showing that oxygen as well as silicon transport occurred during irradiation at room temperature. We propose that both transports are mediated by local electric field and charged and/or uncharged defects created by the electron irradiation. The direct modification of metal oxide/silicon interface by electron-beam irradiation is a promising method of accomplishing direct write electron-beam lithography at buried interfaces.

Effect of helium ion beam treatment on wet etching of silicon dioxide

NASA Astrophysics Data System (ADS)

Petrov, Yu. V.; Grigoryev, E. A.; Sharov, T. V.; Baraban, A. P.

2018-03-01

We investigated the effect of helium ion beam treatment on the etching rate of silicon dioxide in a water based solution of hydrofluoric acid. A 460-nm-thick silicon dioxide film on silicon was irradiated with helium ions having energies of 20 keV and 30 keV with ion fluences ranging from 1014 cm-2 to 1017 cm-2. The dependence of the etching rate on depth was obtained and compared with the depth distribution of ion-induced defects, which was obtained from numerical simulation. Irradiation with helium ions results in an increase of the etching rate of silicon dioxide. The dependence of the etching rate on the calculated concentration of ion-induced defects is described.

Orthogonally superimposed laser-induced periodic surface structures (LIPSS) upon nanosecond laser pulse irradiation of SiO2/Si layered systems

NASA Astrophysics Data System (ADS)

Nürnberger, Philipp; Reinhardt, Hendrik M.; Kim, Hee-Cheol; Pfeifer, Erik; Kroll, Moritz; Müller, Sandra; Yang, Fang; Hampp, Norbert A.

2017-12-01

In this study we examined the formation of laser-induced periodic surface structures (LIPSS) on silicon (Si) in dependence on the thickness of silicon-dioxide (SiO2) on top. LIPSS were generated in air by linearly polarized ≈8 nanosecond laser pulses with a fluence per pulse of 2.41 J cm-2 at a repetition rate of 100 kHz. For SiO2 layers <80 nm, LIPSS oriented perpendicular to the laser polarization were obtained, but for SiO2 layers >120 nm parallel oriented LIPSS were observed. In both cases the periodicity was about 80-90% of the applied laser wavelength (λ0 = 532 nm). By variation of the SiO2 layer thickness in the range between 80 nm-120 nm, the dominating orientation changes. Even orthogonally superimposed LIPSS with a periodicity of only 60% of the laser wavelength were found. We show that the transition of the orientation direction of LIPSS is related to the penetration depth of surface plasmon polariton (SPP) fields into the oxide layer.

Surface-micromachined chain for use in microelectromechanical structures

DOE Office of Scientific and Technical Information (OSTI.GOV)

Vernon, Sr., George E.

2001-01-01

A surface-micromachined chain and a microelectromechanical (MEM) structure incorporating such a chain are disclosed. The surface-micromachined chain can be fabricated in place on a substrate (e.g. a silicon substrate) by depositing and patterning a plurality of alternating layers of a chain-forming material (e.g. polycrystalline silicon) and a sacrificial material (e.g. silicon dioxide or a silicate glass). The sacrificial material is then removed by etching to release the chain for movement. The chain has applications for forming various types of MEM devices which include a microengine (e.g. an electrostatic motor) connected to rotate a drive sprocket, with the surface-micromachined chain beingmore » connected between the drive sprocket and one or more driven sprockets.« less

Specific features of the current–voltage characteristics of SiO{sub 2}/4H-SiC MIS structures with phosphorus implanted into silicon carbide

DOE Office of Scientific and Technical Information (OSTI.GOV)

Mikhaylova, A. I., E-mail: m.aleksey.spb@gmail.com; Afanasyev, A. V.; Ilyin, V. A.

The effect of phosphorus implantation into a 4H-SiC epitaxial layer immediately before the thermal growth of a gate insulator in an atmosphere of dry oxygen on the reliability of the gate insulator is studied. It is found that, together with passivating surface states, the introduction of phosphorus ions leads to insignificant weakening of the dielectric breakdown field and to a decrease in the height of the energy barrier between silicon carbide and the insulator, which is due to the presence of phosphorus atoms at the 4H-SiC/SiO{sub 2} interface and in the bulk of silicon dioxide.

Hybrid microcircuit metallization system for the SLL micro actuator

DOE Office of Scientific and Technical Information (OSTI.GOV)

Hampy, R. E.; Knauss, G. L.; Komarek, E. E.

1976-03-01

A thin film technique developed for the SLL Micro Actuator in which both gold and aluminum can be incorporated on sapphire or fine grained alumina substrates in a two-level metallization system is described. Tungsten is used as a lateral transition metal permitting electrical contact between the gold and aluminum without the two metals coming in physical contact. Silicon dioxide serves as an insulator between the tungsten and aluminum for crossover purposes, and vias through the silicon dioxide permit interconnections where desired. Tungsten-gold is the first level conductor except at crossovers where tungsten only is used and aluminum is the secondmore » level conductor. Sheet resistances of the two levels can be as low as 0.01 ohm/square. Line widths and spaces as small as 0.025 mm can be attained. A second layer of silicon dioxide is deposited over the metallization and opened for all gold and aluminum bonding areas. The metallization system permits effective interconnection of a mixture of devices having both gold and aluminum terminations without creating undesirable gold-aluminum interfaces. Processing temperatures up to 400/sup 0/C can be tolerated for short times without effect on bondability, conductor, and insulator characteristics, thus permitting silicon-gold eutectic die attachment, component soldering, and higher temperatures during gold lead bonding. Tests conducted on special test pattern circuits indicate good stability over the temperature range -55 to +150/sup 0/C. Aging studies indicate no degradation in characteristics in tests of 500 h duration at 150/sup 0/C.« less

Selective growth of titanium dioxide by low-temperature chemical vapor deposition.

PubMed

Reinke, Michael; Kuzminykh, Yury; Hoffmann, Patrik

2015-05-13

A key factor in engineering integrated optical devices such as electro-optic switches or waveguides is the patterning of thin films into specific geometries. In particular for functional oxides, etching processes are usually developed to a much lower extent than for silicon or silicon dioxide; therefore, selective area deposition techniques are of high interest for these materials. We report the selective area deposition of titanium dioxide using titanium isopropoxide and water in a high-vacuum chemical vapor deposition (HV-CVD) process at a substrate temperature of 225 °C. Here—contrary to conventional thermal CVD processes—only hydrolysis of the precursor on the surface drives the film growth as the thermal energy is not sufficient to thermally decompose the precursor. Local modification of the substrate surface energy by perfluoroalkylsilanization leads to a reduced surface residence time of the precursors and, consequently, to lower reaction rate and a prolonged incubation period before nucleation occurs, hence, enabling selective area growth. We discuss the dependence of the incubation time and the selectivity of the deposition process on the presence of the perfluoroalkylsilanization layer and on the precursor impinging rates—with selectivity, we refer to the difference of desired material deposition, before nucleation occurs in the undesired regions. The highest measured selectivity reached (99 ± 5) nm, a factor of 3 superior than previously reported in an atomic layer deposition process using the same chemistry. Furthermore, resolution of the obtained patterns will be discussed and illustrated.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Halsted, Michelle; Wilmoth, Jared L.; Briggs, Paige A.

Microbial communities are incredibly complex systems that dramatically and ubiquitously influence our lives. They help to shape our climate and environment, impact agriculture, drive business, and have a tremendous bearing on healthcare and physical security. Spatial confinement, as well as local variations in physical and chemical properties, affects development and interactions within microbial communities that occupy critical niches in the environment. Recent work has demonstrated the use of silicon based microwell arrays, combined with parylene lift-off techniques, to perform both deterministic and stochastic assembly of microbial communities en masse, enabling the high-throughput screening of microbial communities for their response tomore » growth in confined environments under different conditions. The implementation of a transparent microwell array platform can expand and improve the imaging modalities that can be used to characterize these assembled communities. In this paper, the fabrication and characterization of a next generation transparent microwell array is described. The transparent arrays, comprised of SU-8 patterned on a glass coverslip, retain the ability to use parylene lift-off by integrating a low temperature atomic layer deposition of silicon dioxide into the fabrication process. This silicon dioxide layer prevents adhesion of the parylene material to the patterned SU-8, facilitating dry lift-off, and maintaining the ability to easily assemble microbial communities within the microwells. These transparent microwell arrays can screen numerous community compositions using continuous, high resolution, imaging. Finally, the utility of the design was successfully demonstrated through the stochastic seeding and imaging of green fluorescent protein expressing Escherichia coli using both fluorescence and brightfield microscopies.« less

Electron-beam induced damage in thin insulating films on compound semiconductors. M.S. Thesis, 1988

NASA Technical Reports Server (NTRS)

Pantic, Dragan M.

1989-01-01

Phosphorus rich plasma enhanced chemical vapor deposition (PECVD) of silicon nitride and silicon dioxide films on n-type indium phosphide (InP) substrates were exposed to electron-beam irradiation in the 5 to 40 keV range for the purpose of characterizing the damage induced in the dielectric. The electron-beam exposure was on the range of 10(exp -7) to 10(exp -3) C/sq cm. The damage to the devices was characterized by capacitance-voltage (C-V) measurements of the metal insulator semiconductor (MIS) capacitors. These results were compared to results obtained for radiation damage of thermal silicon dioxide on silicon (Si) MOS capacitors with similar exposures. The radiation induced damage in the PECVD silicon nitride films on InP was successfully annealed out in an hydrogen/nitrogen (H2/N2) ambient at 400 C for 15 min. The PECVD silicon dioxide films on InP had the least radiation damage, while the thermal silicon dioxide films on Si had the most radiation damage.

Thermal and Kerr nonlinear properties of plasma-deposited silicon nitride/ silicon dioxide waveguides.

PubMed

Ikeda, Kazuhiro; Saperstein, Robert E; Alic, Nikola; Fainman, Yeshaiahu

2008-08-18

We introduce and present experimental evaluations of loss and nonlinear optical response in a waveguide and an optical resonator, both implemented with a silicon nitride/ silicon dioxide material platform prepared by plasma-enhanced chemical vapor deposition with dual frequency reactors that significantly reduce the stress and the consequent loss of the devices. We measure a relatively small loss of approximately 4dB/cm in the waveguides. The fabricated ring resonators in add-drop and all-pass arrangements demonstrate quality factors of Q=12,900 and 35,600. The resonators are used to measure both the thermal and ultrafast Kerr nonlinearities. The measured thermal nonlinearity is larger than expected, which is attributed to slower heat dissipation in the plasma-deposited silicon dioxide film. The n2 for silicon nitride that is unknown in the literature is measured, for the first time, as 2.4 x 10(-15)cm(2)/W, which is 10 times larger than that for silicon dioxide.

Hierarchically Structured Electrospun Fibers

DTIC Science & Technology

2013-01-07

polymeric materials such as ceramics and metals, can be fabricated into nanofibers via electrospinning . An assortment of natural polymers, such as the...are traditionally made by electrospinning of the core material, which serves as a template for the deposition of the shell layer via chemical vapor...been made from the contraction of a manganese oxide sol gel upon solvent evaporation, as well as from zinc oxide and silicon dioxide using vapor

Integration of Detectors with Optical Waveguide Structures.

DTIC Science & Technology

1983-05-15

OECLASSIFICATION/DOWNGRADING SCHEDULE ____ ___ ___ ___ __ ___ ____ ___ ___ ___ ___ ___ ___ None If. DISTRIBUTION STATEMNT (of Ole RepOr) Approved for public...The polysilicon gate of the depletion mode MOSFET is boron doped and it is covered by a thermally grown silicon dioxide layer on the top. of the... polysilicon electrode. The wafer then undergoes hydrogen annealing with 24 1/min. hydrogen at 10000C for 30 minutes. The boron impurities which are already

Etching Selectivity of Cr, Fe and Ni Masks on Si & SiO2 Wafers

NASA Astrophysics Data System (ADS)

Garcia, Jorge; Lowndes, Douglas H.

2000-10-01

During this Summer 2000 I joined the Semiconductors and Thin Films group led by Dr. Douglas H. Lowndes at Oak Ridge National Laboratory’s Solid State Division. Our objective was to evaluate the selectivity that Trifluoromethane (CHF3), and Sulfur Hexafluoride (SF6) plasmas have for Si, SiO2 wafers and the Ni, Cr, and Fe masks; being this etching selectivity the ratio of the etching rates of the plasmas for each of the materials. We made use of Silicon and Silicon Dioxide-coated wafers that have Fe, Cr or Ni masks. In the semiconductor field, metal layers are often used as masks to protect layers underneath during processing steps; when these wafers are taken to the dry etching process, both the wafer and the mask layers’ thickness are reduced.

Fission product palladium-silicon carbide interaction in htgr fuel particles

NASA Astrophysics Data System (ADS)

Minato, Kazuo; Ogawa, Toru; Kashimura, Satoru; Fukuda, Kousaku; Shimizu, Michio; Tayama, Yoshinobu; Takahashi, Ishio

1990-07-01

Interaction of fission product palladium (Pd) with the silicon carbide (SiC) layer was observed in irradiated Triso-coated uranium dioxide particles for high temperature gas-cooled reactors (HTGR) with an optical microscope and electron probe microanalyzers. The SiC layers were attacked locally or the reaction product formed nodules at the attack site. Although the main element concerned with the reaction was palladium, rhodium and ruthenium were also detected at the corroded areas in some particles. Palladium was detected on both the hot and cold sides of the particles, but the corroded areas and the palladium accumulations were distributed particularly on the cold side of the particles. The observed Pd-SiC reaction depths were analyzed on the assumption that the release of palladium from the fuel kernel controls the whole Pd-SiC reaction.

Dynamically tunable dendritic graphene-based absorber with thermal stability at infrared regions

NASA Astrophysics Data System (ADS)

Huang, Hailong; Xia, Hui; Guo, Zhibo; Xie, Ding; Li, Hongjian

2018-06-01

The infrared polarization-insensitive absorber, which is composed of dendritic metal, graphene layer, silicon dioxides layer, gallium arsenide substrate, and metal plate, is investigated theoretically and numerically. The tunability can be realized by loading a graphene layer into the structure. The position of absorption peak can be tuned by manipulating the graphene's Fermi energy. Compared with the previously reported graphene-based absorbers, the system has the advantage of temperature-independent high absorption. The results indicate that the proposed absorber can be used in the applications of the refractive index sensor with a sensitivity of 587.8 nm/refractive index unit and temperature-insensitive infrared absorber.

Application Of Optical Processing For Growth Of Silicon Dioxide

DOEpatents

Sopori, Bhushan L.

1997-06-17

A process for producing a silicon dioxide film on a surface of a silicon substrate. The process comprises illuminating a silicon substrate in a substantially pure oxygen atmosphere with a broad spectrum of visible and infrared light at an optical power density of from about 3 watts/cm.sup.2 to about 6 watts/cm.sup.2 for a time period sufficient to produce a silicon dioxide film on the surface of the silicon substrate. An optimum optical power density is about 4 watts/cm.sup.2 for growth of a 100.ANG.-300.ANG. film at a resultant temperature of about 400.degree. C. Deep level transient spectroscopy analysis detects no measurable impurities introduced into the silicon substrate during silicon oxide production and shows the interface state density at the SiO.sub.2 /Si interface to be very low.

Electrical response of electron selective atomic layer deposited TiO2‑x heterocontacts on crystalline silicon substrates

NASA Astrophysics Data System (ADS)

Ahiboz, Doğuşcan; Nasser, Hisham; Aygün, Ezgi; Bek, Alpan; Turan, Raşit

2018-04-01

Integration of oxygen deficient sub-stoichiometric titanium dioxide (TiO2‑x) thin films as the electron transporting-hole blocking layer in solar cell designs are expected to reduce fabrication costs by eliminating high temperature processes while maintaining high conversion efficiencies. In this paper, we conducted a study to reveal the electrical properties of TiO2‑x thin films grown on crystalline silicon (c-Si) substrates by atomic layer deposition (ALD) technique. Effect of ALD substrate temperature, post deposition annealing, and doping type of the c-Si substrate on the interface states and TiO2‑x bulk properties were extracted by performing admittance (C-V, G-V) and current-voltage (J-V) measurements. Moreover, the asymmetry in C-V and J-V measurements between the p-n type and n-n TiO2‑x-c-Si heterojunction types were examined and the electron transport selectivity of TiO2‑x was revealed.

Photo-electronic current transport in back-gated graphene transistor

NASA Astrophysics Data System (ADS)

Srivastava, Ashok; Chen, Xinlu; Pradhan, Aswini K.

2017-04-01

In this work, we have studied photo-electronic current transport in a back-gated graphene field-effect transistor. Under the light illumination, band bending at the metal/graphene interface develops a built-in potential which generates photonic current at varying back-gate biases. A typical MOSFET type back-gated transistor structure uses a monolayer graphene as the channel layer formed over the silicon dioxide/silicon substrate. It is shown that the photo-electronic current consists of current contributions from photovoltaic, photo-thermoelectric and photo-bolometric effects. A maximum external responsivity close to 0.0009A/W is achieved at 30μW laser power source and 633nm wavelength.

Method for selective CMP of polysilicon

NASA Technical Reports Server (NTRS)

Babu, Suryadevara V. (Inventor); Natarajan, Anita (Inventor); Hegde, Sharath (Inventor)

2010-01-01

A method of removing polysilicon in preference to silicon dioxide and/or silicon nitride by chemical mechanical polishing. The method removes polysilicon from a surface at a high removal rate while maintaining a high selectivity of polysilicon to silicon dioxide and/or a polysilicon to silicon nitride. The method is particularly suitable for use in the fabrication of MEMS devices.

Annealing pressure induced ions transfer in Cobalt-Ferrite thin films on amorphous SiO2/Si substrates

NASA Astrophysics Data System (ADS)

Huang, Shun-Yu; Chong, Cheong-Wei; Chen, Pin-Hui; Li, Hong-Lin; Li, Min-Kai; Huang, J. C. Andrew

2017-11-01

In this work, Cobalt-Ferrite (CFO) films were grown on silicon substrates with 300 nm amorphous silicon dioxide by Pulsed Laser Deposition (PLD) with different annealing conditions. The results of structural analysis prove that the CFO films have high crystalline quality with (1 1 1) preferred orientation. The Raman spectra and X-ray absorption spectra (XAS) indicate that the Co ions can transfer from tetrahedral sites to octahedral sites with increasing the annealing pressure. The site exchange of Co and Fe ions leads to the change of saturation magnetization in the CFO films. Our experiments provide not only a way to control the magnetism of CFO films, but also a suitable magnetic layer to develop silicon and semiconductor based spintronic devices.

Modulation Doping of Silicon using Aluminium-induced Acceptor States in Silicon Dioxide

PubMed Central

König, Dirk; Hiller, Daniel; Gutsch, Sebastian; Zacharias, Margit; Smith, Sean

2017-01-01

All electronic, optoelectronic or photovoltaic applications of silicon depend on controlling majority charge carriers via doping with impurity atoms. Nanoscale silicon is omnipresent in fundamental research (quantum dots, nanowires) but also approached in future technology nodes of the microelectronics industry. In general, silicon nanovolumes, irrespective of their intended purpose, suffer from effects that impede conventional doping due to fundamental physical principles such as out-diffusion, statistics of small numbers, quantum- or dielectric confinement. In analogy to the concept of modulation doping, originally invented for III-V semiconductors, we demonstrate a heterostructure modulation doping method for silicon. Our approach utilizes a specific acceptor state of aluminium atoms in silicon dioxide to generate holes as majority carriers in adjacent silicon. By relocating the dopants from silicon to silicon dioxide, Si nanoscale doping problems are circumvented. In addition, the concept of aluminium-induced acceptor states for passivating hole selective tunnelling contacts as required for high-efficiency photovoltaics is presented and corroborated by first carrier lifetime and tunnelling current measurements. PMID:28425460

Application of optical processing for growth of silicon dioxide

DOEpatents

Sopori, B.L.

1997-06-17

A process for producing a silicon dioxide film on a surface of a silicon substrate is disclosed. The process comprises illuminating a silicon substrate in a substantially pure oxygen atmosphere with a broad spectrum of visible and infrared light at an optical power density of from about 3 watts/cm{sup 2} to about 6 watts/cm{sup 2} for a time period sufficient to produce a silicon dioxide film on the surface of the silicon substrate. An optimum optical power density is about 4 watts/cm{sup 2} for growth of a 100{angstrom}-300{angstrom} film at a resultant temperature of about 400 C. Deep level transient spectroscopy analysis detects no measurable impurities introduced into the silicon substrate during silicon oxide production and shows the interface state density at the SiO{sub 2}/Si interface to be very low. 1 fig.

Thermal oxidation of silicon in a residual oxygen atmosphere—the RESOX process—for self-limiting growth of thin silicon dioxide films

NASA Astrophysics Data System (ADS)

Wright, Jason T.; Carbaugh, Daniel J.; Haggerty, Morgan E.; Richard, Andrea L.; Ingram, David C.; Kaya, Savas; Jadwisienczak, Wojciech M.; Rahman, Faiz

2016-10-01

We describe in detail the growth procedures and properties of thermal silicon dioxide grown in a limited and dilute oxygen atmosphere. Thin thermal oxide films have become increasingly important in recent years due to the continuing down-scaling of ultra large scale integration metal oxide silicon field effect transistors. Such films are also of importance for organic transistors where back-gating is needed. The technique described here is novel and allows self-limited formation of high quality thin oxide films on silicon surfaces. This technique is easy to implement in both research laboratory and industrial settings. Growth conditions and their effects on film growth have been described. Properties of the resulting oxide films, relevant for microelectronic device applications, have also been investigated and reported here. Overall, our findings are that thin, high quality, dense silicon dioxide films of thicknesses up to 100 nm can be easily grown in a depleted oxygen environment at temperatures similar to that used for usual silicon dioxide thermal growth in flowing dry oxygen.

Electron beam induced damage in PECVD Si3N4 and SiO2 films on InP

NASA Technical Reports Server (NTRS)

Pantic, Dragan M.; Kapoor, Vik J.; Young, Paul G.; Williams, Wallace D.; Dickman, John E.

1990-01-01

Phosphorus rich plasma enhanced chemical vapor deposition (PECVD) of silicon nitride and silicon dioxide films on n-type indium phosphide (InP) substrates were exposed to electron beam irradiation in the 5 to 40 keV range for the purpose of characterizing the damage induced in the dielectic. The electron beam exposure was on the range of 10(exp -7) to 10(exp -3) C/sq cm. The damage to the devices was characterized by capacitance-voltage (C-V) measurements of the metal insulator semiconductor (MIS) capacitors. These results were compared to results obtained for radiation damage of thermal silicon dioxide on silicon (Si) MOS capacitors with similar exposures. The radiation induced damage in the PECVD silicon nitride films on InP was successfully annealed out in an hydrogen/nitrogen (H2/N2) ambient at 400 C for 15 min. The PECVD silicon dioxide films on InP had the least radiation damage, while the thermal silicon dioxide films on Si had the most radiation damage.

Clarifying coverages on the basis of tapes SnO2, SiO2, Si3N4 for photodiodes of ultraviolet and visible range

NASA Astrophysics Data System (ADS)

Dobrovolsciy, Yu. George; Perevertaylo, Vladimir L.; Shabashcevich, Boris G.; Pidkamin, Leonid J.

2009-10-01

It is shown, what coverage of dioxide of tin is instrumental in the rise of sensitiveness of photodiodes sensible in the ultraviolet region of spectrum on the basis of selenid zinc and phosphide of gallium to 0,12 A/W and 0,2 A/W accordingly in the maximum of spectral description of sensitiveness. All so it is shown, that tape of nitrid silicon - dioxide of silicon a bit better clarifies silicon photodiode, especially on a wave-length 700 nm. Gluing composition, in general, worsens admission of tapes, and in a greater degree the admission of tape of nitrid silicon - dioxide of silicon.

Non-destructive determination of thickness of the dielectric layers using EDX

NASA Astrophysics Data System (ADS)

Sokolov, S. A.; Kelm, E. A.; Milovanov, R. A.; Abdullaev, D. A.; Sidorov, L. N.

2016-12-01

In this work a non-destructive method for measuring the thickness of the dielectric layers consisting of silicon dioxide and silicon nitride has been developed using a scanning electron microscope (SEM) equipped with energy dispersive X-ray spectrometer (EDS). Rising in accelerating voltage of electron beam leads to increasing in the depth of generation of the characteristic X-ray. If the ratio of the signal intensity of one of the substrate's elements to the noise equal to 3 suggests that the generation's depth of the characteristic X-ray coincides with the thickness of the overlying film. Dependence of the overlying film's thickness on the accelerating voltage can be plotted. Validation of the results was carried out by using the equation of Anderson-Hassler. The generation's volume of the characteristic X-Ray was simulated by CASINO program. The simulations results are in good agreement with experimental results for small thicknesses.

Passivation of long-wave infrared InAs/GaSb strained layer superlattice detectors

NASA Astrophysics Data System (ADS)

Plis, E.; Kutty, M. N.; Myers, S.; Kim, H. S.; Gautam, N.; Dawson, L. R.; Krishna, S.

2011-05-01

We have investigated various passivation techniques for type-II InAs/GaSb strained layer superlattice (SLS) detectors with p-i-n and PbIbN designs with a 100%-cut-off wavelength of ˜12 μm at 77 K. The passivation schemes include dielectric deposition (silicon nitride (SiN x), silicon dioxide (SiO 2), photoresist (SU-8)), chalcogenide treatments (zinc sulfide (ZnS), ammonium sulfide [(NH 4) 2S]), and electrochemical sulphur deposition. [(NH 4) 2S] passivation and electrochemical sulphur passivation (ECP) showed the better performances, improving the dark current density by factors of 200 and 25 (p-i-n detector) and ˜3 and 54 (PbIbN detector), respectively ( T = 77 K, -0.1 V of applied bias). The specific detectivity D* was improved by a factor of 2 and by an order of magnitude for (NH 4) 2S and ECP passivated PbIbN detectors, respectively.

Integration of Electrodeposited Ni-Fe in MEMS with Low-Temperature Deposition and Etch Processes

PubMed Central

Schiavone, Giuseppe; Murray, Jeremy; Perry, Richard; Mount, Andrew R.; Desmulliez, Marc P. Y.; Walton, Anthony J.

2017-01-01

This article presents a set of low-temperature deposition and etching processes for the integration of electrochemically deposited Ni-Fe alloys in complex magnetic microelectromechanical systems, as Ni-Fe is known to suffer from detrimental stress development when subjected to excessive thermal loads. A selective etch process is reported which enables the copper seed layer used for electrodeposition to be removed while preserving the integrity of Ni-Fe. In addition, a low temperature deposition and surface micromachining process is presented in which silicon dioxide and silicon nitride are used, respectively, as sacrificial material and structural dielectric. The sacrificial layer can be patterned and removed by wet buffered oxide etch or vapour HF etching. The reported methods limit the thermal budget and minimise the stress development in Ni-Fe. This combination of techniques represents an advance towards the reliable integration of Ni-Fe components in complex surface micromachined magnetic MEMS. PMID:28772683

Development of transparent microwell arrays for optical monitoring and dissection of microbial communities

DOE PAGES

Halsted, Michelle; Wilmoth, Jared L.; Briggs, Paige A.; ...

2016-09-29

Microbial communities are incredibly complex systems that dramatically and ubiquitously influence our lives. They help to shape our climate and environment, impact agriculture, drive business, and have a tremendous bearing on healthcare and physical security. Spatial confinement, as well as local variations in physical and chemical properties, affects development and interactions within microbial communities that occupy critical niches in the environment. Recent work has demonstrated the use of silicon based microwell arrays, combined with parylene lift-off techniques, to perform both deterministic and stochastic assembly of microbial communities en masse, enabling the high-throughput screening of microbial communities for their response tomore » growth in confined environments under different conditions. The implementation of a transparent microwell array platform can expand and improve the imaging modalities that can be used to characterize these assembled communities. In this paper, the fabrication and characterization of a next generation transparent microwell array is described. The transparent arrays, comprised of SU-8 patterned on a glass coverslip, retain the ability to use parylene lift-off by integrating a low temperature atomic layer deposition of silicon dioxide into the fabrication process. This silicon dioxide layer prevents adhesion of the parylene material to the patterned SU-8, facilitating dry lift-off, and maintaining the ability to easily assemble microbial communities within the microwells. These transparent microwell arrays can screen numerous community compositions using continuous, high resolution, imaging. Finally, the utility of the design was successfully demonstrated through the stochastic seeding and imaging of green fluorescent protein expressing Escherichia coli using both fluorescence and brightfield microscopies.« less

Preparation of electrochemically active silicon nanotubes in highly ordered arrays

PubMed Central

Grünzel, Tobias; Lee, Young Joo; Kuepper, Karsten

2013-01-01

Summary Silicon as the negative electrode material of lithium ion batteries has a very large capacity, the exploitation of which is impeded by the volume changes taking place upon electrochemical cycling. A Si electrode displaying a controlled porosity could circumvent the difficulty. In this perspective, we present a preparative method that yields ordered arrays of electrochemically competent silicon nanotubes. The method is based on the atomic layer deposition of silicon dioxide onto the pore walls of an anodic alumina template, followed by a thermal reduction with lithium vapor. This thermal reduction is quantitative, homogeneous over macroscopic samples, and it yields amorphous silicon and lithium oxide, at the exclusion of any lithium silicides. The reaction is characterized by spectroscopic ellipsometry for thin silica films, and by nuclear magnetic resonance and X-ray photoelectron spectroscopy for nanoporous samples. After removal of the lithium oxide byproduct, the silicon nanotubes can be contacted electrically. In a lithium ion electrolyte, they then display the electrochemical waves also observed for other bulk or nanostructured silicon systems. The method established here paves the way for systematic investigations of how the electrochemical properties (capacity, charge/discharge rates, cyclability) of nanoporous silicon negative lithium ion battery electrode materials depend on the geometry. PMID:24205460

Protective coating for ceramic materials

NASA Technical Reports Server (NTRS)

Kourtides, Demetrius A. (Inventor); Churchward, Rex A. (Inventor); Lowe, David M. (Inventor)

1994-01-01

A protective coating for ceramic materials such as those made of silicon carbide, aluminum oxide, zirconium oxide, aluminoborosilicate and silicon dioxide, and a thermal control structure comprising a ceramic material having coated thereon the protective coating. The protective coating contains, in admixture, silicon dioxide powder, colloidal silicon dioxide, water, and one or more emittance agents selected from silicon tetraboride, silicon hexaboride, silicon carbide, molybdenum disilicide, tungsten disilicide and zirconium diboride. In another aspect, the protective coating is coated on a flexible ceramic fabric which is the outer cover of a composite insulation. In yet another aspect, a metallic foil is bonded to the outer surface of a ceramic fabric outer cover of a composite insulation via the protective coating. A primary application of this invention is as a protective coating for ceramic materials used in a heat shield for space vehicles subjected to very high aero-convective heating environments.

Fabrication and stabilization of silicon-based photonic crystals with tuned morphology for multi-band optical filtering

NASA Astrophysics Data System (ADS)

Salem, Mohamed Shaker; Abdelaleem, Asmaa Mohamed; El-Gamal, Abear Abdullah; Amin, Mohamed

2017-01-01

One-dimensional silicon-based photonic crystals are formed by the electrochemical anodization of silicon substrates in hydrofluoric acid-based solution using an appropriate current density profile. In order to create a multi-band optical filter, two fabrication approaches are compared and discussed. The first approach utilizes a current profile composed of a linear combination of sinusoidal current waveforms having different frequencies. The individual frequency of the waveform maps to a characteristic stop band in the reflectance spectrum. The stopbands of the optical filter created by the second approach, on the other hand, are controlled by stacking multiple porous silicon rugate multilayers having different fabrication conditions. The morphology of the resulting optical filters is tuned by controlling the electrolyte composition and the type of the silicon substrate. The reduction of sidelobes arising from the interference in the multilayers is observed by applying an index matching current profile to the anodizing current waveform. In order to stabilize the resulting optical filters against natural oxidation, atomic layer deposition of silicon dioxide on the pore wall is employed.

Ampel Bamboo Leaves Silicon Dioxide (SiO2) Extraction

NASA Astrophysics Data System (ADS)

Irzaman; Oktaviani, Novi; Irmansyah

2018-03-01

The bamboo tree trunk was the most commonly used part of daily life. Bamboo leaves often wereconsidered waste by the community, and bamboo leaves contain Silicon dioxide (SiO2). We have developed and compare two silicon dioxide method, using combustion to washing method (A) and washing to combustion method (B). Atom purity of either method was 99.9 %, with the tetragonal crystal structure. Mg, Au, Ca, and K impurities were found in Method A sample, andnot in Method B.

Structure and optical properties of TiO2 thin films deposited by ALD method

NASA Astrophysics Data System (ADS)

Szindler, Marek; Szindler, Magdalena M.; Boryło, Paulina; Jung, Tymoteusz

2017-12-01

This paper presents the results of study on titanium dioxide thin films prepared by atomic layer deposition method on a silicon substrate. The changes of surface morphology have been observed in topographic images performed with the atomic force microscope (AFM) and scanning electron microscope (SEM). Obtained roughness parameters have been calculated with XEI Park Systems software. Qualitative studies of chemical composition were also performed using the energy dispersive spectrometer (EDS). The structure of titanium dioxide was investigated by X-ray crystallography. A variety of crystalline TiO2 was also confirmed by using the Raman spectrometer. The optical reflection spectra have been measured with UV-Vis spectrophotometry.

A MEMS Infrared Thermopile Fabricated from Silicon-On-Insulator with Phononic Crystal Structures and Carbon Nanotube Absorption Layer

NASA Astrophysics Data System (ADS)

Gray, Kory Forrest

The goal of this project was to examine the possibility of creating a novel thermal infrared detector based on silicon CMOS technology that has been enhanced by the latest nano-engineering discoveries. Silicon typically is not thought as an efficient thermoelectric material. However recent advancements in nanotechnology have improved the potential for a highly sensitive infrared detector based on nano-structured silicon. The thermal conductivity of silicon has been shown to be reduced from 150 W/mK down to 60 W/mK just by decreasing the scale of the silicon from bulk down to the sub-micron scale. Further reduction of the thermal conductivity has been shown by patterning silicon with a phonon crystal structure which has been reported to have thermal conductivities down to 10 W/mK. The phonon crystal structure consists of a 2D array of holes that are etched into the silicon. The size and pitch of the holes are on the order of the mean free path of the phonons in silicon which is approximately 200-500nm. This particular device had 200nm holes on a 400nm pitch. The Seebeck coefficient of silicon can also be enhanced by the reduction of the material from the bulk to sub-micron scale and with degenerate level doping. The combination of decreased thermal conductivity and increased Seebeck coefficient allow silicon to be a promising material for thermoelectric infrared detectors. The highly doped silicon is desired to reduce the electrical resistance of the device. The low electrical resistance is required to reduce the Johnson noise of the device which is the dominant noise source for most thermal detectors. This project designed a MEMS thermopile using a silicon-on-insulator substrate, and a CMOS compatible process. The basic thermopile consists of a silicon dioxide membrane with phononic crystal patterned silicon thermocouples around the edges of the membrane. Vertical aligned, multi-walled, carbon nanotubes were used as the infrared absorption layer. A MEMS thermoelectric detector with a D* of 3 * 107 cm Hz 0.5/W was demonstrated with a time response of 3-10 milliseconds. With this initial research, it is possible to improve the D* to the high 108 cm Hz 0.5/W range by slightly changing the design of the thermopile and patterning the absorption layer.

Hexagonal arrays of round-head silicon nanopillars for surface anti-reflection applications

NASA Astrophysics Data System (ADS)

Yan, Wensheng; Dottermusch, Stephan; Reitz, Christian; Richards, Bryce S.

2016-10-01

We designed and fabricated an anti-reflection surface of hexagonal arrays of round-head silicon nanopillars. The measurements show a significant reduction in reflectivity across a broad spectral range. However, we then grew a conformal titanium dioxide coating via atomic layer deposition to achieve an extremely low weighted average reflection of 2.1% over the 460-1040 nm wavelength range. To understand the underlying reasons for the reduced reflectance, the simulations were conducted and showed that it is due to strong forward scattering of incident light into the silicon substrate. The calculated normalized scattering cross section demonstrates a broadband distribution feature, and the peak has a red-shift to longer wavelengths. Finally, we report two-dimensional weighted average reflectance as a function of both wavelength and angle of incidence and present the resulting analysis contour map.

Nanostructured silicon membranes for control of molecular transport.

PubMed

Srijanto, Bernadeta R; Retterer, Scott T; Fowlkes, Jason D; Doktycz, Mitchel J

2010-11-01

A membrane that allows selective transport of molecular species requires precise engineering on the nanoscale. Membrane permeability can be tuned by controlling the physical structure and surface chemistry of the pores. Here, a combination of electron beam and optical lithography, along with cryogenic deep reactive ion etching, has been used to fabricate silicon membranes that are physically robust, have uniform pore sizes, and are directly integrated into a microfluidic network. Additional reductions in pore size were achieved using plasma enhanced chemical vapor deposition and atomic layer deposition of silicon dioxide to coat membrane surfaces. Cross sectioning of the membranes using focused ion beam milling was used to determine the physical shape of the membrane pores before and after coating. Functional characterization of the membranes was performed by using quantitative fluorescence microscopy to document the transport of molecular species across the membrane.

Comparison between Conduction and Convection Effects on Self-Heating in Doped Microcantilevers

PubMed Central

Ansari, Mohd Zahid; Cho, Chongdu

2012-01-01

The present study investigates the effects of thermal conduction and convection on self-heating temperatures and bimetallic deflections produced in doped microcantilever sensors. These cantilevers are commonly used as sensors and actuators in microsystems. The cantilever is a monolith, multi-layer structure with a thin U-shaped element inside. The cantilever substrate is made of silicon and silicon dioxide, respectively, and the element is p-doped silicon. A numerical analysis package (ANSYS) is used to study the effect of cantilever substrate material, element width, applied voltage and the operating environments on cantilever characteristics. The numerical results for temperature are compared against their analytical models. Results indicate the numerical results are accurate within 6% of analytical, and Si/Si cantilevers are more suitable for biosensors and AFM, whereas, Si/SiO2 are for hotplates and actuators applications. PMID:22438736

Fabrication and Modification of Nanoporous Silicon Particles

NASA Technical Reports Server (NTRS)

Ferrari, Mauro; Liu, Xuewu

2010-01-01

Silicon-based nanoporous particles as biodegradable drug carriers are advantageous in permeation, controlled release, and targeting. The use of biodegradable nanoporous silicon and silicon dioxide, with proper surface treatments, allows sustained drug release within the target site over a period of days, or even weeks, due to selective surface coating. A variety of surface treatment protocols are available for silicon-based particles to be stabilized, functionalized, or modified as required. Coated polyethylene glycol (PEG) chains showed the effective depression of both plasma protein adsorption and cell attachment to the modified surfaces, as well as the advantage of long circulating. Porous silicon particles are micromachined by lithography. Compared to the synthesis route of the nanomaterials, the advantages include: (1) the capability to make different shapes, not only spherical particles but also square, rectangular, or ellipse cross sections, etc.; (2) the capability for very precise dimension control; (3) the capacity for porosity and pore profile control; and (4) allowance of complex surface modification. The particle patterns as small as 60 nm can be fabricated using the state-of-the-art photolithography. The pores in silicon can be fabricated by exposing the silicon in an HF/ethanol solution and then subjecting the pores to an electrical current. The size and shape of the pores inside silicon can be adjusted by the doping of the silicon, electrical current application, the composition of the electrolyte solution, and etching time. The surface of the silicon particles can be modified by many means to provide targeted delivery and on-site permanence for extended release. Multiple active agents can be co-loaded into the particles. Because the surface modification of particles can be done on wafers before the mechanical release, asymmetrical surface modification is feasible. Starting from silicon wafers, a treatment, such as KOH dipping or reactive ion etching (RIE), may be applied to make the surface rough. This helps remove the nucleation layer. A protective layer is then deposited on the wafer. The protective layer, such as silicon nitride film or photoresist film, protects the wafer from electrochemical etching in an HF-based solution. A lithography technique is applied to pattern the particles onto the protective film. The undesired area of the protective film is removed, and the protective film on the back side of the wafer is also removed. Then the pattern is exposed to HF/surfactant solution, and a larger DC electrical current is applied to the wafers for a selected time. This step removes the nucleation layer. Then a DC current is applied to generate the nanopores. Next, a large electrical current is applied to generate a release layer. The particles are mechanically suspended in the solvent and collected by filtration or centrifuge.

Vacancy-type defects in TiO2/SiO2/SiC dielectric stacks

NASA Astrophysics Data System (ADS)

Coleman, P. G.; Burrows, C. P.; Mahapatra, R.; Wright, N. G.

2007-07-01

Open-volume (vacancy-type) point defects have been observed in ˜80-nm-thick titanium dioxide films grown on silicon dioxide/4H silicon carbide substrates as stacks with high dielectric constant for power device applications, using variable-energy positron annihilation spectroscopy. The concentration of vacancies decreases as the titanium dioxide growth temperature is increased in the range from 700to1000°C, whereas grain boundaries form in the polycrystalline material at the highest growth temperatures. It is proposed that the optimal electrical performance for films grown at 800°C reflects a balance between decreasing vacancy concentration and increasing grain boundary formation. The concentration of vacancies at the silicon dioxide/silicon carbide interface appears to saturate after 2.5h oxidation at 1150°C. A supplementary result suggests that the quality of the 10-μm-thick deposited silicon carbide epilayer is compromised at depths of about 2μm and beyond, possibly by the migration of impurities and/or other defects from the standard-grade highly doped 4H silicon carbide wafer beneath the epilayer during oxidation.

High-Quality Solution-Processed Silicon Oxide Gate Dielectric Applied on Indium Oxide Based Thin-Film Transistors.

PubMed

Jaehnike, Felix; Pham, Duy Vu; Anselmann, Ralf; Bock, Claudia; Kunze, Ulrich

2015-07-01

A silicon oxide gate dielectric was synthesized by a facile sol-gel reaction and applied to solution-processed indium oxide based thin-film transistors (TFTs). The SiOx sol-gel was spin-coated on highly doped silicon substrates and converted to a dense dielectric film with a smooth surface at a maximum processing temperature of T = 350 °C. The synthesis was systematically improved, so that the solution-processed silicon oxide finally achieved comparable break downfield strength (7 MV/cm) and leakage current densities (<10 nA/cm(2) at 1 MV/cm) to thermally grown silicon dioxide (SiO2). The good quality of the dielectric layer was successfully proven in bottom-gate, bottom-contact metal oxide TFTs and compared to reference TFTs with thermally grown SiO2. Both transistor types have field-effect mobility values as high as 28 cm(2)/(Vs) with an on/off current ratio of 10(8), subthreshold swings of 0.30 and 0.37 V/dec, respectively, and a threshold voltage close to zero. The good device performance could be attributed to the smooth dielectric/semiconductor interface and low interface trap density. Thus, the sol-gel-derived SiO2 is a promising candidate for a high-quality dielectric layer on many substrates and high-performance large-area applications.

Investigation of low leakage current radiation detectors on n-type 4H-SiC epitaxial layers

NASA Astrophysics Data System (ADS)

Nguyen, Khai V.; Chaudhuri, Sandeep K.; Mandal, Krishna C.

2014-09-01

The surface leakage current of high-resolution 4H-SiC epitaxial layer Schottky barrier detectors has been improved significantly after surface passivations of 4H-SiC epitaxial layers. Thin (nanometer range) layers of silicon dioxide (SiO2) and silicon nitride (Si3N4) were deposited on 4H-SiC epitaxial layers using plasma enhanced chemical vapor deposition (PECVD) on 20 μm thick n-type 4H-SiC epitaxial layers followed by the fabrication of large area (~12 mm2) Schottky barrier radiation detectors. The fabricated detectors have been characterized through current-voltage (I-V), capacitance-voltage (C-V), and alpha pulse height spectroscopy measurements; the results were compared with that of detectors fabricated without surface passivations. Improved energy resolution of ~ 0.4% for 5486 keV alpha particles was observed after passivation, and it was found that the performance of these detectors were limited by the presence of macroscopic and microscopic crystal defects affecting the charge transport properties adversely. Capacitance mode deep level transient studies (DLTS) revealed the presence of a titanium impurity related shallow level defects (Ec-0.19 eV), and two deep level defects identified as Z1/2 and Ci1 located at Ec-0.62 and ~ Ec-1.40 eV respectively.

An Enhanced Soft Vibrotactile Actuator Based on ePVC Gel with Silicon Dioxide Nanoparticles.

PubMed

Park, Won-Hyeong; Shin, Eun-Jae; Yun, Sungryul; Kim, Sang-Youn

2018-01-01

In this paper, we propose a soft vibrotactile actuator made by mixing silicon dioxide nanoparticles and plasticized PVC gel. The effect of the silicon dioxide nanoparticles in the plasticized PVC gel for the haptic performance is investigated in terms of electric, dielectric, and mechanical properties. Furthermore, eight soft vibrotactile actuators are prepared as a function of the content. Experiments are conducted to examine the haptic performance of the prepared eight soft vibrotactile actuators and to find the best weight ratio of the plasticized PVC gel to the nanoparticles. The experiments should show that the plasticized PVC gel with silicon dioxide nanoparticles improves the haptic performance of the plasticized PVC gel-based vibrotactile actuator, and the proposed vibrotactile actuator can create a variety of haptic sensations in a wide frequency range.

Tailoring properties of lossy-mode resonance optical fiber sensors with atomic layer deposition technique

NASA Astrophysics Data System (ADS)

Kosiel, Kamil; Koba, Marcin; Masiewicz, Marcin; Śmietana, Mateusz

2018-06-01

The paper shows application of atomic layer deposition (ALD) technique as a tool for tailoring sensorial properties of lossy-mode-resonance (LMR)-based optical fiber sensors. Hafnium dioxide (HfO2), zirconium dioxide (ZrO2), and tantalum oxide (TaxOy), as high-refractive-index dielectrics that are particularly convenient for LMR-sensor fabrication, were deposited by low-temperature (100 °C) ALD ensuring safe conditions for thermally vulnerable fibers. Applicability of HfO2 and ZrO2 overlays, deposited with ALD-related atomic level thickness accuracy for fabrication of LMR-sensors with controlled sensorial properties was presented. Additionally, for the first time according to our best knowledge, the double-layer overlay composed of two different materials - silicon nitride (SixNy) and TaxOy - is presented for the LMR fiber sensors. The thin films of such overlay were deposited by two different techniques - PECVD (the SixNy) and ALD (the TaxOy). Such approach ensures fast overlay fabrication and at the same time facility for resonant wavelength tuning, yielding devices with satisfactory sensorial properties.

Digital Printing of Titanium Dioxide for Dye Sensitized Solar Cells.

PubMed

Cherrington, Ruth; Wood, Benjamin Michael; Salaoru, Iulia; Goodship, Vannessa

2016-05-04

Silicon solar cell manufacturing is an expensive and high energy consuming process. In contrast, dye sensitized solar cell production is less environmentally damaging with lower processing temperatures presenting a viable and low cost alternative to conventional production. This paper further enhances these environmental credentials by evaluating the digital printing and therefore additive production route for these cells. This is achieved here by investigating the formation and performance of a metal oxide photoelectrode using nanoparticle sized titanium dioxide. An ink-jettable material was formulated, characterized and printed with a piezoelectric inkjet head to produce a 2.6 µm thick layer. The resultant printed layer was fabricated into a functioning cell with an active area of 0.25 cm(2) and a power conversion efficiency of 3.5%. The binder-free formulation resulted in a reduced processing temperature of 250 °C, compatible with flexible polyamide substrates which are stable up to temperatures of 350 ˚C. The authors are continuing to develop this process route by investigating inkjet printing of other layers within dye sensitized solar cells.

Digital Printing of Titanium Dioxide for Dye Sensitized Solar Cells

PubMed Central

Cherrington, Ruth; Wood, Benjamin Michael; Salaoru, Iulia; Goodship, Vannessa

2016-01-01

Silicon solar cell manufacturing is an expensive and high energy consuming process. In contrast, dye sensitized solar cell production is less environmentally damaging with lower processing temperatures presenting a viable and low cost alternative to conventional production. This paper further enhances these environmental credentials by evaluating the digital printing and therefore additive production route for these cells. This is achieved here by investigating the formation and performance of a metal oxide photoelectrode using nanoparticle sized titanium dioxide. An ink-jettable material was formulated, characterized and printed with a piezoelectric inkjet head to produce a 2.6 µm thick layer. The resultant printed layer was fabricated into a functioning cell with an active area of 0.25 cm2 and a power conversion efficiency of 3.5%. The binder-free formulation resulted in a reduced processing temperature of 250 °C, compatible with flexible polyamide substrates which are stable up to temperatures of 350 ˚C. The authors are continuing to develop this process route by investigating inkjet printing of other layers within dye sensitized solar cells. PMID:27166761

Effects of a silica-based feed supplement on performance, health, and litter quality of growing turkeys.

PubMed

Tran, S T; Bowman, M E; Smith, T K

2015-08-01

Poor litter quality is a potential challenge to footpad health as well as the primary cause of ammonia volatilization. High ambient ammonia concentration is one of the most significant factors negatively affecting poultry production today. Some minerals have been reported to reduce ammonia release from poultry litter. Silicon dioxide, a highly pure and natural mineral, shows promise in decreasing ammonia volatilization and improving litter quality. The objective of the current study was to investigate the effects of feed-borne silicon dioxide on litter quality and how this impacts bird performance, general health and footpad health throughout a 12-wk posthatching turkey study. Supplementing the diet with silicon dioxide was found to significantly improve turkey BW gain and the efficiency of feed conversion. The severity of footpad dermatitis was monitored throughout the experimental period but no significant effect of diet was seen. The feeding of silicon dioxide reduced litter pH which decreased the conversion of NH4⁺ to NH3 thereby reducing nitrogen losses from litter. It was concluded that, under our study conditions, the feeding of 0.02% silicon dioxide offers potential economic benefits to turkey producers. © 2015 Poultry Science Association Inc.

Liquid carbon dioxide absorbents, methods of using the same, and related system

DOE Office of Scientific and Technical Information (OSTI.GOV)

Perry, Robert James; Soloveichik, Grigorii Lev; Rubinsztajn, Malgorzata Iwona

A carbon dioxide absorbent composition is described, including (i) a liquid, nonaqueous silicon-based material, functionalized with one or more groups that either reversibly react with CO 2 or have a high-affinity for CO 2, and (ii) a hydroxy-containing solvent that is capable of dissolving both the silicon-based material and a reaction product of the silicon-based material and CO 2. The absorbent may be utilized in methods to reduce carbon dioxide in an exhaust gas, and finds particular utility in power plants.

Liquid carbon dioxide absorbents, methods of using the same, and related systems

DOEpatents

O'Brien, Michael Joseph; Perry, Robert James; Lam, Tunchiao Hubert; Soloveichik, Grigorii Lev; Kniajanski, Sergei; Lewis, Larry Neil; Rubinsztajn, Malgorzata Iwona; Hancu, Dan

2016-09-13

A carbon dioxide absorbent composition is described, including (i) a liquid, nonaqueous silicon-based material, functionalized with one or more groups that either reversibly react with CO.sub.2 or have a high-affinity for CO.sub.2; and (ii) a hydroxy-containing solvent that is capable of dissolving both the silicon-based material and a reaction product of the silicon-based material and CO.sub.2. The absorbent may be utilized in methods to reduce carbon dioxide in an exhaust gas, and finds particular utility in power plants.

Gamma radiation effects on silicon photonic waveguides.

PubMed

Grillanda, Stefano; Singh, Vivek; Raghunathan, Vivek; Morichetti, Francesco; Melloni, Andrea; Kimerling, Lionel; Agarwal, Anuradha M

2016-07-01

To support the use of integrated photonics in harsh environments, such as outer space, the hardness threshold to high-energy radiation must be established. Here, we investigate the effects of gamma (γ) rays, with energy in the MeV-range, on silicon photonic waveguides. By irradiation of high-quality factor amorphous silicon core resonators, we measure the impact of γ rays on the materials incorporated in our waveguide system, namely amorphous silicon, silicon dioxide, and polymer. While we show the robustness of amorphous silicon and silicon dioxide up to an absorbed dose of 15 Mrad, more than 100× higher than previous reports on crystalline silicon, polymer materials exhibit changes with doses as low as 1 Mrad.

Growth and Etch Rate Study of Low Temperature Anodic Silicon Dioxide Thin Films

PubMed Central

Ashok, Akarapu; Pal, Prem

2014-01-01

Silicon dioxide (SiO2) thin films are most commonly used insulating films in the fabrication of silicon-based integrated circuits (ICs) and microelectromechanical systems (MEMS). Several techniques with different processing environments have been investigated to deposit silicon dioxide films at temperatures down to room temperature. Anodic oxidation of silicon is one of the low temperature processes to grow oxide films even below room temperature. In the present work, uniform silicon dioxide thin films are grown at room temperature by using anodic oxidation technique. Oxide films are synthesized in potentiostatic and potentiodynamic regimes at large applied voltages in order to investigate the effect of voltage, mechanical stirring of electrolyte, current density and the water percentage on growth rate, and the different properties of as-grown oxide films. Ellipsometry, FTIR, and SEM are employed to investigate various properties of the oxide films. A 5.25 Å/V growth rate is achieved in potentiostatic mode. In the case of potentiodynamic mode, 160 nm thickness is attained at 300 V. The oxide films developed in both modes are slightly silicon rich, uniform, and less porous. The present study is intended to inspect various properties which are considered for applications in MEMS and Microelectronics. PMID:24672287

Fully CMOS-compatible titanium nitride nanoantennas

DOE Office of Scientific and Technical Information (OSTI.GOV)

Briggs, Justin A., E-mail: jabriggs@stanford.edu; Department of Materials Science and Engineering, Stanford University, 496 Lomita Mall, Stanford, California 94305; Naik, Gururaj V.

CMOS-compatible fabrication of plasmonic materials and devices will accelerate the development of integrated nanophotonics for information processing applications. Using low-temperature plasma-enhanced atomic layer deposition (PEALD), we develop a recipe for fully CMOS-compatible titanium nitride (TiN) that is plasmonic in the visible and near infrared. Films are grown on silicon, silicon dioxide, and epitaxially on magnesium oxide substrates. By optimizing the plasma exposure per growth cycle during PEALD, carbon and oxygen contamination are reduced, lowering undesirable loss. We use electron beam lithography to pattern TiN nanopillars with varying diameters on silicon in large-area arrays. In the first reported single-particle measurements onmore » plasmonic TiN, we demonstrate size-tunable darkfield scattering spectroscopy in the visible and near infrared regimes. The optical properties of this CMOS-compatible material, combined with its high melting temperature and mechanical durability, comprise a step towards fully CMOS-integrated nanophotonic information processing.« less

Titanium dioxide antireflection coating for silicon solar cells by spray deposition

NASA Technical Reports Server (NTRS)

Kern, W.; Tracy, E.

1980-01-01

A high-speed production process is described for depositing a single-layer, quarter-wavelength thick antireflection coating of titanium dioxide on metal-patterned single-crystal silicon solar cells for terrestrial applications. Controlled atomization spraying of an organotitanium solution was selected as the most cost-effective method of film deposition using commercial automated equipment. The optimal composition consists of titanium isopropoxide as the titanium source, n-butyl acetate as the diluent solvent, sec-butanol as the leveling agent, and 2-ethyl-1-hexanol to render the material uniformly depositable. Application of the process to the coating of circular, large-diameter solar cells with either screen-printed silver metallization or with vacuum-evaporated Ti/Pd/Ag metallization showed increases of over 40% in the electrical conversion efficiency. Optical characteristics, corrosion resistance, and several other important properties of the spray-deposited film are reported. Experimental evidence indicates a wide tolerance in the coating thickness upon the overall efficiency of the cell. Considerations pertaining to the optimization of AR coatings in general are discussed, and a comprehensive critical survey of the literature is presented.

Control of carbon balance in a silicon smelting furnace

DOEpatents

Dosaj, Vishu D.; Haines, Cathryn M.; May, James B.; Oleson, John D.

1992-12-29

The present invention is a process for the carbothermic reduction of silicon dioxide to form elemental silicon. Carbon balance of the process is assessed by measuring the amount of carbon monoxide evolved in offgas exiting the furnace. A ratio of the amount of carbon monoxide evolved and the amount of silicon dioxide added to the furnace is determined. Based on this ratio, the carbon balance of the furnace can be determined and carbon feed can be adjusted to maintain the furnace in carbon balance.

Super liquid-repellent gas membranes for carbon dioxide capture and heart-lung machines.

PubMed

Paven, Maxime; Papadopoulos, Periklis; Schöttler, Susanne; Deng, Xu; Mailänder, Volker; Vollmer, Doris; Butt, Hans-Jürgen

2013-01-01

In a gas membrane, gas is transferred between a liquid and a gas through a microporous membrane. The main challenge is to achieve a high gas transfer while preventing wetting and clogging. With respect to the oxygenation of blood, haemocompatibility is also required. Here we coat macroporous meshes with a superamphiphobic-or liquid repellent-layer to meet this challenge. The superamphiphobic layer consists of a fractal-like network of fluorinated silicon oxide nanospheres; gas trapped between the nanospheres keeps the liquid from contacting the wall of the membrane. We demonstrate the capabilities of the membrane by capturing carbon dioxide gas into a basic aqueous solution and in addition use it to oxygenate blood. Usually, blood tends to clog membranes because of the abundance of blood cells, platelets, proteins and lipids. We show that human blood stored in a superamphiphobic well for 24 h can be poured off without leaving cells or adsorbed protein behind.

Trends and Techniques for Space Base Electronics

NASA Technical Reports Server (NTRS)

Trotter, J. D.; Wade, T. E.; Gassaway, J. D.

1979-01-01

Simulations of various phosphorus and boron diffusions in SOS were completed and a sputtering system, furnaces, and photolithography related equipment were set up. Double layer metal experiments initially utilized wet chemistry techniques. By incorporating ultrasonic etching of the vias, premetal cleaning a modified buffered HF, phosphorus doped vapox, and extended sintering, yields of 98% were obtained using the standard test pattern. A two dimensional modeling program was written for simulating short channel MOSFETs with nonuniform substrate doping. A key simplifying assumption used is that the majority carriers can be represented by a sheet charge at the silicon dioxide silicon interface. Although the program is incomplete, the two dimensional Poisson equation for the potential distribution was achieved. The status of other Z-D MOSFET simulation programs is summarized.

Optimization of contaminated oxide inversion layer solar cell. [considering silicon oxide coating

NASA Technical Reports Server (NTRS)

Call, R. L.

1976-01-01

Contaminated oxide cells have been fabricated with efficiencies of 8.6% with values of I sub sc = 120 ma, V sub oc = .54 volts, and curve factor of .73. Attempts to optimize the fabrication step to yield a higher output have not been successful. The fundamental limitation is the inadequate antireflection coating afforded by the silicon dioxide coating used to hold the contaminating ions. Coatings of SiO, therefore, were used to obtain a good antireflection coating, but the thinness of the coatings prevented a large concentration of the contaminating ions, and the cells was weak. Data of the best cell were .52 volts V sub oc, 110 ma I sub sc, .66 CFF and 6.7% efficiency.

Gate-dependent asymmetric transport characteristics in pentacene barristors with graphene electrodes.

PubMed

Hwang, Wang-Taek; Min, Misook; Jeong, Hyunhak; Kim, Dongku; Jang, Jingon; Yoo, Daekyung; Jang, Yeonsik; Kim, Jun-Woo; Yoon, Jiyoung; Chung, Seungjun; Yi, Gyu-Chul; Lee, Hyoyoung; Wang, Gunuk; Lee, Takhee

2016-11-25

We investigated the electrical characteristics and the charge transport mechanism of pentacene vertical hetero-structures with graphene electrodes. The devices are composed of vertical stacks of silicon, silicon dioxide, graphene, pentacene, and gold. These vertical heterojunctions exhibited distinct transport characteristics depending on the applied bias direction, which originates from different electrode contacts (graphene and gold contacts) to the pentacene layer. These asymmetric contacts cause a current rectification and current modulation induced by the gate field-dependent bias direction. We observed a change in the charge injection barrier during variable-temperature current-voltage characterization, and we also observed that two distinct charge transport channels (thermionic emission and Poole-Frenkel effect) worked in the junctions, which was dependent on the bias magnitude.

Rapid bio-patterning method based on the fabrication of PEG microstructures and layer-by-layer polymeric thin film

NASA Astrophysics Data System (ADS)

Shim, Hyun-Woo; Lee, Ji-Hye; Choi, Chang-Hyoung; Song, Hwan-Moon; Kim, Bo-Yeol; Kim, Dong-Pyo; Lee, Chang-Soo

2007-12-01

The patterning of biomolecules in well-defined microstructures is critical issue for the development of biosensors and biochips. However, the fabrication of microstructures with well-ordered and spatially discrete forms to provide the patterned surface for the immobilization of biomolecules is difficult because of the lack of distinct physical and chemical barriers separating patterns. This study present rapid biomolecule patterning using micromolding in capillaries (MIMIC), soft-lithographic fabrication of PEG microstructures for prevention of nonspecific binding as a biological barrier, and self assembled polymeric thin film for efficient immobilization of proteins or cells. For the proof of concept, protein (FITC-BSA), bacteria (E.coli BL21-pET23b-GFP) were used for biomolecules patterning on polyelectrolyte coated surface within PEG microstructures. The novel approach of MIMIC combined with LbL coating provides a general platform for patterning a broad range of materials because it can be easily applied to various substrates such as glass, silicon, silicon dioxide, and polymers.

Free Energy Minimization Calculation of Complex Chemical Equilibria. Reduction of Silicon Dioxide with Carbon at High Temperature.

ERIC Educational Resources Information Center

Wai, C. M.; Hutchinson, S. G.

1989-01-01

Discusses the calculation of free energy in reactions between silicon dioxide and carbon. Describes several computer programs for calculating the free energy minimization and their uses in chemistry classrooms. Lists 16 references. (YP)

Towards Fieldable Rapid Bioagent Detection: advanced Resonant Optical Waveguide and Biolayer Structures for Integrated Biosensing

DTIC Science & Technology

2007-11-01

waveguide approach in which a right-angled gadolinium gallium garnet (GGG) glass prism of index 1.965 at 633 nm is used to couple light from a HeNe laser of...SPARROW sensor consists of two planar, single mode aluminum oxide waveguides separated vertically by a lower refractive index silicon dioxide layer...and high stability could be formed on aluminum oxide, the binding of an alkyl carboxylic acid, stearic acid (n-octadecanoic acid), was investigated

30 CFR 70.2 - Definitions.

Code of Federal Regulations, 2014 CFR

2014-07-01

... designated area. (m) Quartz means crystalline silicon dioxide (SiO2) not chemically combined with other... produced and routine day-to-day activities are occurring in the DA. Quartz. Crystalline silicon dioxide (SiO2) not chemically combined with other substances and having a distinctive physical structure...

Simulation and experimental verification of silicon dioxide deposition by PECVD

NASA Astrophysics Data System (ADS)

Xu, Qing; Li, Yu-Xing; Li, Xiao-Ning; Wang, Jia-Bin; Yang, Fan; Yang, Yi; Ren, Tian-Ling

2017-02-01

Deposition of silicon dioxide in high-density plasma is an important process in integrated circuit manufacturing. A software named CFD-ACE was used to simulate the mechanism of plasma in the chamber of plasma enhanced chemical vapor deposition (PECVD) system, and the evolution of the feature profile was simulated based on CFD-TOPO. Simulation and experiment of silicon dioxide that deposited in SiH4/N2O mixture by PECVD system was researched. The particle density, energy and angular distribution in the chamber were simulated and discussed. We also studied how the depth/width ratio affected the step coverage of the trench and analyzed the deposition rate of silicon dioxide on the feature scale. X-ray photoelectron spectroscopy (XPS) was used to analyze the elemental composition of thin films. Images of the feature profiles were taken by scanning electron microscope (SEM). The simulation results were in good agreement with experimental, which could guide the semiconductor device manufacture.

Heterogeneous reduction of carbon dioxide by hydride-terminated silicon nanocrystals

PubMed Central

Sun, Wei; Qian, Chenxi; He, Le; Ghuman, Kulbir Kaur; Wong, Annabelle P. Y.; Jia, Jia; Jelle, Abdinoor A.; O'Brien, Paul G.; Reyes, Laura M.; Wood, Thomas E.; Helmy, Amr S.; Mims, Charles A.; Singh, Chandra Veer; Ozin, Geoffrey A.

2016-01-01

Silicon constitutes 28% of the earth's mass. Its high abundance, lack of toxicity and low cost coupled with its electrical and optical properties, make silicon unique among the semiconductors for converting sunlight into electricity. In the quest for semiconductors that can make chemicals and fuels from sunlight and carbon dioxide, unfortunately the best performers are invariably made from rare and expensive elements. Here we report the observation that hydride-terminated silicon nanocrystals with average diameter 3.5 nm, denoted ncSi:H, can function as a single component heterogeneous reducing agent for converting gaseous carbon dioxide selectively to carbon monoxide, at a rate of hundreds of μmol h−1 g−1. The large surface area, broadband visible to near infrared light harvesting and reducing power of SiH surface sites of ncSi:H, together play key roles in this conversion. Making use of the reducing power of nanostructured hydrides towards gaseous carbon dioxide is a conceptually distinct and commercially interesting strategy for making fuels directly from sunlight. PMID:27550234

Use of silicon oxynitride as a sacrificial material for microelectromechanical devices

DOEpatents

Habermehl, Scott D.; Sniegowski, Jeffry J.

2001-01-01

The use of silicon oxynitride (SiO.sub.x N.sub.y) as a sacrificial material for forming a microelectromechanical (MEM) device is disclosed. Whereas conventional sacrificial materials such as silicon dioxide and silicate glasses are compressively strained, the composition of silicon oxynitride can be selected to be either tensile-strained or substantially-stress-free. Thus, silicon oxynitride can be used in combination with conventional sacrificial materials to limit an accumulation of compressive stress in a MEM device; or alternately the MEM device can be formed entirely with silicon oxynitride. Advantages to be gained from the use of silicon oxynitride as a sacrificial material for a MEM device include the formation of polysilicon members that are substantially free from residual stress, thereby improving the reliability of the MEM device; an ability to form the MEM device with a higher degree of complexity and more layers of structural polysilicon than would be possible using conventional compressively-strained sacrificial materials; and improved manufacturability resulting from the elimination of wafer distortion that can arise from an excess of accumulated stress in conventional sacrificial materials. The present invention is useful for forming many different types of MEM devices including accelerometers, sensors, motors, switches, coded locks, and flow-control devices, with or without integrated electronic circuitry.

XANES analyses of silicon crystalline irradiated by nitrogen/oxygen ions.

PubMed

Yoshida, T; Hara, T; Li, T; Yoshida, H; Tanabe, T

2001-03-01

X-ray absorption techniques have been applied to the characterization of 5 keV nitrogen / oxygen ions implanted silicon samples. The depth selective measurement of XANES by recording in PEY mode and the quantitative analysis by superposition of XANES spectra were carried out to elucidate the depth profile of implanted ions. It has been revealed that the silicon nitride phase were formed in silicon after prolonged N+ irradiation and it extended over the deep part of the damaged region from the surface. On the other hand, for the O+ irradiation, silicon dioxide phase were produced only in the shallow part of the damaged region, i.e., the silicon dioxide phase likely broke off during the irradiation.

Method for one-to-one polishing of silicon nitride and silicon oxide

NASA Technical Reports Server (NTRS)

Babu, Suryadevara V. (Inventor); Natarajan, Anita (Inventor)

2009-01-01

The present invention provides a method of removing silicon nitride at about the same removal rate as silicon dioxide by CMP. The method utilizes a polishing slurry that includes colloidal silica abrasive particles dispersed in water and additives that modulate the silicon dioxide and silicon nitride removal rates such that they are about the same. In one embodiment of the invention, the additive is lysine or lysine mono hydrochloride in combination with picolinic acid, which is effective at a pH of about 8. In another embodiment of the invention, the additive is arginine in combination with picolinic acid, which is effective at a pH of about 10.

Surface-enhanced Raman scattering of amorphous TiO2 thin films by gold nanostructures: Revealing first layer effect with thickness variation

NASA Astrophysics Data System (ADS)

Degioanni, S.; Jurdyc, A.-M.; Bessueille, F.; Coulm, J.; Champagnon, B.; Vouagner, D.

2013-12-01

In this paper, amorphous titanium dioxide (TiO2) thin films have been deposited on a commercially available Klarite substrate using the sol-gel process to produce surface-enhanced Raman scattering (SERS). The substrate consists of square arrays of micrometer-sized pyramidal pits in silicon with a gold coating. Several thin TiO2 layers have been deposited on the surface to study the influence of film thickness. Ultimately, we obtained information on SERS of an amorphous TiO2 layer by gold nanostructures, whose range is less than a few nanometers. Mechanisms responsible for the enhancement are the product of concomitant chemical and electromagnetic effects with an important contribution from plasmon-induced charge transfer.

Use of fractional laser microablation and ultrasound to facilitate the delivery of gold nanoparticles into skin in vivo

NASA Astrophysics Data System (ADS)

Terentyuk, G. S.; Genina, Elina A.; Bashkatov, A. N.; Ryzhova, M. V.; Tsyganova, N. A.; Chumakov, D. S.; Khlebtsov, B. N.; Sazonov, A. A.; Dolotov, L. E.; Tuchin, Valerii V.; Khlebtsov, Nikolai G.; Inozemtseva, O. A.

2012-06-01

The delivery of gold nanoparticles (nanocages coated with a layer of silicon dioxide (40/20 nm)) dispersed in the solution (glycerol + polyethylene glycol-400, 1 : 1) into the skin tissue is studied experimentally in vivo. From the data of optical coherence tomography and histochemical analysis it follows that simple application of suspension of nanoparticles is not efficient enough for delivery of the particles into the skin as a result of passive diffusion. It is shown that fractional laser microablation of skin before the application of the suspension, followed by the topical treatment by ultrasound allows penetration through the epidermis layer and delivery of nanoparticles into dermis and hypodermis

Transverse mode control in proton-implanted and oxide-confined VCSELs via patterned dielectric anti-phase filters

NASA Astrophysics Data System (ADS)

Kesler, Benjamin; O'Brien, Thomas; Dallesasse, John M.

2017-02-01

A novel method for controlling the transverse lasing modes in both proton implanted and oxide-confined vertical- cavity surface-emitting lasers (VCSELs) with a multi-layer, patterned, dielectric anti-phase (DAP) filter is pre- sented. Using a simple photolithographic liftoff process, dielectric layers are deposited and patterned on individual VCSELs to modify (increase or decrease) the mirror reflectivity across the emission aperture via anti-phase reflections, creating spatially-dependent threshold material gain. The shape of the dielectric pattern can be tailored to overlap with specific transverse VCSEL modes or subsets of transverse modes to either facilitate or inhibit lasing by decreasing or increasing, respectively, the threshold modal gain. A silicon dioxide (SiO2) and titanium dioxide (TiO2) anti-phase filter is used to achieve a single-fundamental-mode, continuous-wave output power greater than 4.0 mW in an oxide-confined VCSEL at a lasing wavelength of 850 nm. A filter consisting of SiO2 and TiO2 is used to facilitate injection-current-insensitive fundamental mode and lower order mode lasing in proton implanted VCSELs at a lasing wavelength of 850 nm. Higher refractive index dielectric materials such as amorphous silicon (a-Si) can be used to increase the effectiveness of the anti-phase filter on proton implanted devices by reducing the threshold modal gain of any spatially overlapping modes. This additive, non-destructive method allows for mode selection at any lasing wavelength and for any VCSEL layer structure without the need for semiconductor etching or epitaxial regrowth. It also offers the capability of designing a filter based upon available optical coating materials.

Infrared floodlight

DOEpatents

Levin, Robert E.; English, George J.

1986-08-05

An infrared floodlight assembly designed particularly for security purposes and including a heat-conducting housing, a lens secured to the housing to provide a closure therefor, and a floodlight located within (and surrounded by) the housing. The floodlight combines the use of a tungsten halogen light source and dichroic hot and cold mirrors for directing substantially only infrared radiation toward the assembly's forward lens. Visible radiation is absorbed by the housing's interior wall(s) and, optionally, by a filter located between the floodlight and lens. An optional means may be used within the floodlight to reflect all forward radiation back toward the paraboloidal hot mirror or, alternatively, to reflect only visible radiation in this direction. The dichroic hot and cold mirrors preferably each comprise a glass substrate having multiple layers of titanium dioxide and silicon dioxide thereon.

A Study on Organic-Metal Halide Perovskite Film Morphology, Interfacial Layers, Tandem Applications, and Encapsulation

NASA Astrophysics Data System (ADS)

Fisher, Dallas A.

Organic-metal halide perovskites have brought about a new wave of research in the photovoltaic community due to their ideally suited optical and electronic parameters. In less than a decade, perovskite solar cell performance has skyrocketed to unprecedented efficiencies with numerous reported methodologies. Perovskites face many challenges with high-quality film morphology, interfacial layers, and long-term stability. In this work, these active areas are explored through a combination of studies. First, the importance of perovskite film precursor ratios is explored with an in-depth study of carrier lifetime and solvent-grain effects. It was found that excess lead iodide precursor greatly improves the film morphology by reducing pinholes in the solar absorber. Dimethyl sulfoxide (DMSO) solvent was found to mend grains, as well as improve carrier lifetime and device performance, possibly by passivation of grain boundary traps. Second, applications of perovskite with tandem cells is investigated, with an emphasis for silicon devices. Perovskites can easily be integrated with silicon, which already has strong market presence. Additionally, both materials' bandgaps are ideally suited for maximum tandem efficiency. The silicon/perovskite tandem device structure necessitated the optimization of inverted (p-i-n) structure devices. PEDOT:PSS, copper oxide, and nickel oxide p-type layers were explored through a combination of photoluminescent, chemical reactivity, and solar simulation results. Results were hindered due to resistive ITO and rough silicon substrates, but tandem devices displayed Voc indicative of proper monolithic performance. Third, replacement of titanium dioxide n-type layer with iron oxide (Fe 2O3, common rust) was studied. Iron oxide experiences less ultraviolet instability than that of titanium dioxide under solar illumination. It was found that current density slightly decreased due to parasitic absorption from the rust, but that open circuit voltage decreased drastically due to poor band alignment. Fe2O3 appears to be better suited to a narrower band gap material than methylammonium lead iodide perovskite. Finally, encapsulation of perovskite devices with epoxy coatings is explored as a method to improve long-term stability. Perovskites are sensitive to a variety of conditions, but most importantly water and polar molecules. Encapsulants act as a moisture/oxygen barrier, but also prevent outgassing of the organic components. Three epoxies were tested in high heat and high humidity conditions. Important factors in the curing process were uncovered such as the sensitivity of UV-epoxies to amine functional groups found in common p-type dopants and perovskite layers. Moisture ingress was the failure point for high-humidity/heat devices which was confirmed through conversion to yellow lead iodide. A revised device fabrication method is proposed to reduce moisture ingress for future experiments.

21 CFR 172.480 - Silicon dioxide.

Code of Federal Regulations, 2011 CFR

2011-04-01

... 21 Food and Drugs 3 2011-04-01 2011-04-01 false Silicon dioxide. 172.480 Section 172.480 Food and Drugs FOOD AND DRUG ADMINISTRATION, DEPARTMENT OF HEALTH AND HUMAN SERVICES (CONTINUED) FOOD FOR HUMAN CONSUMPTION (CONTINUED) FOOD ADDITIVES PERMITTED FOR DIRECT ADDITION TO FOOD FOR HUMAN CONSUMPTION Anticaking...

21 CFR 172.480 - Silicon dioxide.

Code of Federal Regulations, 2010 CFR

2010-04-01

... 21 Food and Drugs 3 2010-04-01 2009-04-01 true Silicon dioxide. 172.480 Section 172.480 Food and Drugs FOOD AND DRUG ADMINISTRATION, DEPARTMENT OF HEALTH AND HUMAN SERVICES (CONTINUED) FOOD FOR HUMAN CONSUMPTION (CONTINUED) FOOD ADDITIVES PERMITTED FOR DIRECT ADDITION TO FOOD FOR HUMAN CONSUMPTION Anticaking...

Design and characterization of a phantom that simultaneously simulates tissue optical properties between 400 and 650 nm

NASA Astrophysics Data System (ADS)

Wagnieres, Georges A.; Cheng, Shangguan; Zellweger, Matthieu; Doegnitz-Utke, Nora; Braichotte, Daniel; Ballini, Jean-Pierre; van den Bergh, Hubert

1996-12-01

The design and characterization of optical phantoms which have the same absorption and scattering characteristics as biological tissues in a broad spectral window (between 400 and 650 nm) are presented. These low cost phantoms use agarose dissolved in water as the transparent matrix. The latter is loaded with various amounts of silicon dioxide, intralipid, ink, bovine serum, blood, azide, penicillin and fluorochromes. The silicon dioxide and intralipid particles are responsible for the light scattering whereas the ink and blood are the absorbers. The penicillin and the azide are used to insure the conservation of such phantoms when stored at 4 degrees Celsius. The serum and fluorochromes, such as Coumarin 30, produce an autofluorescence similar to human tissues. Various fluorochromes or photosensitizers can be added to these phantoms to simulate a photodetection procedure. The absorption and fluorescence spectroscopy of the dyes tested was not different in these phantoms than in live tissues. The mechanical properties of these gelatinous phantoms are also of interest as they can easily be molded and reshaped with a conventional cutter, so that for instance layered structures, with different optical properties in each layer, can be designed. The optical properties of these phantoms were determined between 400 and 650 nm by measuring their effective attenuation coefficient ((mu) eff) and total reflectance (Rd). The microscopic absorption and reduced scattering coefficients ((mu) a, (mu) s') were deduced from (mu) eff and Rd using a Monte-Carlo simulation.

Monolithic optical link in silicon-on-insulator CMOS technology.

PubMed

Dutta, Satadal; Agarwal, Vishal; Hueting, Raymond J E; Schmitz, Jurriaan; Annema, Anne-Johan

2017-03-06

This work presents a monolithic laterally-coupled wide-spectrum (350 nm < λ < 1270 nm) optical link in a silicon-on-insulator CMOS technology. The link consists of a silicon (Si) light-emitting diode (LED) as the optical source and a Si photodiode (PD) as the detector; both realized by vertical abrupt n⁺p junctions, separated by a shallow trench isolation composed of silicon dioxide. Medium trench isolation around the devices along with the buried oxide layer provides galvanic isolation. Optical coupling in both avalanche-mode and forward-mode operation of the LED are analyzed for various designs and bias conditions. From both DC and pulsed transient measurements, it is further shown that heating in the avalanche-mode LED leads to a slow thermal coupling to the PD with time constants in the ms range. An integrated heat sink in the same technology leads to a ∼ 6 times reduction in the change in PD junction temperature per unit electrical power dissipated in the avalanche-mode LED. The analysis paves way for wide-spectrum optical links integrated in smart power technologies.

Surface Micromachined Silicon Carbide Accelerometers for Gas Turbine Applications

NASA Technical Reports Server (NTRS)

DeAnna, Russell G.

1998-01-01

A finite-element analysis of possible silicon carbide (SIC) folded-beam, lateral-resonating accelerometers is presented. Results include stiffness coefficients, acceleration sensitivities, resonant frequency versus temperature, and proof-mass displacements due to centripetal acceleration of a blade-mounted sensor. The surface micromachined devices, which are similar to the Analog Devices Inc., (Norwood, MA) air-bag crash detector, are etched from 2-pm thick, 3C-SiC films grown at 1600 K using atmospheric pressure chemical vapor deposition (APCVD). The substrate is a 500 gm-thick, (100) silicon wafer. Polysilicon or silicon dioxide is used as a sacrificial layer. The finite element analysis includes temperature-dependent properties, shape change due to volume expansion, and thermal stress caused by differential thermal expansion of the materials. The finite-element results are compared to experimental results for a SiC device of similar, but not identical, geometry. Along with changes in mechanical design, blade-mounted sensors would require on-chip circuitry to cancel displacements due to centripetal acceleration and improve sensitivity and bandwidth. These findings may result in better accelerometer designs for this application.

Communication: Photoinduced carbon dioxide binding with surface-functionalized silicon quantum dots.

PubMed

Douglas-Gallardo, Oscar A; Sánchez, Cristián Gabriel; Vöhringer-Martinez, Esteban

2018-04-14

Nowadays, the search for efficient methods able to reduce the high atmospheric carbon dioxide concentration has turned into a very dynamic research area. Several environmental problems have been closely associated with the high atmospheric level of this greenhouse gas. Here, a novel system based on the use of surface-functionalized silicon quantum dots (sf-SiQDs) is theoretically proposed as a versatile device to bind carbon dioxide. Within this approach, carbon dioxide trapping is modulated by a photoinduced charge redistribution between the capping molecule and the silicon quantum dots (SiQDs). The chemical and electronic properties of the proposed SiQDs have been studied with a Density Functional Theory and Density Functional Tight-Binding (DFTB) approach along with a time-dependent model based on the DFTB framework. To the best of our knowledge, this is the first report that proposes and explores the potential application of a versatile and friendly device based on the use of sf-SiQDs for photochemically activated carbon dioxide fixation.

Communication: Photoinduced carbon dioxide binding with surface-functionalized silicon quantum dots

NASA Astrophysics Data System (ADS)

Douglas-Gallardo, Oscar A.; Sánchez, Cristián Gabriel; Vöhringer-Martinez, Esteban

2018-04-01

Nowadays, the search for efficient methods able to reduce the high atmospheric carbon dioxide concentration has turned into a very dynamic research area. Several environmental problems have been closely associated with the high atmospheric level of this greenhouse gas. Here, a novel system based on the use of surface-functionalized silicon quantum dots (sf-SiQDs) is theoretically proposed as a versatile device to bind carbon dioxide. Within this approach, carbon dioxide trapping is modulated by a photoinduced charge redistribution between the capping molecule and the silicon quantum dots (SiQDs). The chemical and electronic properties of the proposed SiQDs have been studied with a Density Functional Theory and Density Functional Tight-Binding (DFTB) approach along with a time-dependent model based on the DFTB framework. To the best of our knowledge, this is the first report that proposes and explores the potential application of a versatile and friendly device based on the use of sf-SiQDs for photochemically activated carbon dioxide fixation.

Reliability of new poly (lactic-co-glycolic acid) membranes treated with oxygen plasma plus silicon dioxide layers for pre-prosthetic guided bone regeneration processes.

PubMed

Castillo-Dalí, G; Castillo-Oyagüe, R; Batista-Cruzado, A; López-Santos, C; Rodríguez-González-Elipe, A; Saffar, J-L; Lynch, C-D; Gutiérrez-Pérez, J-L; Torres-Lagares, D

2017-03-01

The use of cold plasmas may improve the surface roughness of poly(lactic-co-glycolic) acid (PLGA) membranes, which may stimulate the adhesion of osteogenic mediators and cells, thus accelerating the biodegradation of the barriers. Moreover, the incorporation of metallic-oxide particles to the surface of these membranes may enhance their osteoinductive capacity. Therefore, the aim of this paper was to evaluate the reliability of a new PLGA membrane after being treated with oxygen plasma (PO2) plus silicon dioxide (SiO2) layers for guided bone regeneration (GBR) processes. Circumferential bone defects (diameter: 11 mm; depth: 3 mm) were created on the top of eight experimentation rabbits' skulls and were randomly covered with: (1) PLGA membranes (control), or (2) PLGA/PO2/SiO2 barriers. The animals were euthanized two months afterwards. A micromorphologic study was then performed using ROI (region of interest) colour analysis. Percentage of new bone formation, length of mineralised bone, concentration of osteoclasts, and intensity of ostheosynthetic activity were assessed and compared with those of the original bone tissue. The Kruskal-Wallis test was applied for between-group com Asignificance level of a=0.05 was considered. The PLGA/PO2/SiO2 membranes achieved the significantly highest new bone formation, length of mineralised bone, concentration of osteoclasts, and ostheosynthetic activity. The percentage of regenerated bone supplied by the new membranes was similar to that of the original bone tissue. Unlike what happened in the control group, PLGA/PO2/SiO2 membranes predominantly showed bone layers in advanced stages of formation. The addition of SiO2 layers to PLGA membranes pre-treated with PO2 improves their bone-regeneration potential. Although further research is necessary to corroborate these conclusions in humans, this could be a promising strategy to rebuild the bone architecture prior to rehabilitate edentulous areas.

Formation of multiple levels of porous silicon for buried insulators and conductors in silicon device technologies

DOEpatents

Blewer, Robert S.; Gullinger, Terry R.; Kelly, Michael J.; Tsao, Sylvia S.

1991-01-01

A method of forming a multiple level porous silicon substrate for semiconductor integrated circuits including anodizing non-porous silicon layers of a multi-layer silicon substrate to form multiple levels of porous silicon. At least one porous silicon layer is then oxidized to form an insulating layer and at least one other layer of porous silicon beneath the insulating layer is metallized to form a buried conductive layer. Preferably the insulating layer and conductive layer are separated by an anodization barrier formed of non-porous silicon. By etching through the anodization barrier and subsequently forming a metallized conductive layer, a fully or partially insulated buried conductor may be fabricated under single crystal silicon.

Technological processes of grating light valve as diffractive spatial light modulator in laser phototypesetting system

NASA Astrophysics Data System (ADS)

Zhang, Wei; Geng, Yu; Hou, Changlun; Yang, Guoguang; Bai, Jian

2008-11-01

Grating Light Valve (GLV) is a kind of optics device based on Micro-Opto-Electro-Mechanical System (MOEMS) technology, utilizing diffraction principle to switch, attenuate and modulate light. In this paper, traditional GLV device's structure and its working principle are illuminated, and a kind of modified GLV structure is presented, with details introduction of the fabrication technology. The GLV structure includes single crystal silicon substrate, silicon dioxide isolating layer, aluminum layer of fixed ribbons and silicon nitride of movable ribbons. In the fabrication, lots of techniques are adopted, such as low-pressure chemical vapor deposition (LPCVD), photolithography, etching and evaporation. During the fabrication processes, Photolithography is a fundamental and fatal technology, which determines etching result and GLV quality. Some methods are proposed through repeated experiments, to improve etching result greatly and guide the practical application. This kind of GLV device can be made both small and inexpensively, and has been tested to show proper range of actuation under DC bias, with good performance. The GLV device also has merits such as low cost, simple technology, high fill ratio and low driving voltage. It can properly be well used and match the demands of high light power needed in laser phototypesetting system, as a high-speed, high-resolution light modulator.

Buried oxide layer in silicon

DOEpatents

Sadana, Devendra Kumar; Holland, Orin Wayne

2001-01-01

A process for forming Silicon-On-Insulator is described incorporating the steps of ion implantation of oxygen into a silicon substrate at elevated temperature, ion implanting oxygen at a temperature below 200.degree. C. at a lower dose to form an amorphous silicon layer, and annealing steps to form a mixture of defective single crystal silicon and polycrystalline silicon or polycrystalline silicon alone and then silicon oxide from the amorphous silicon layer to form a continuous silicon oxide layer below the surface of the silicon substrate to provide an isolated superficial layer of silicon. The invention overcomes the problem of buried isolated islands of silicon oxide forming a discontinuous buried oxide layer.

Cup-Shaped Superparamagnetic Hemispheres for Size-Selective Cell Filtration

PubMed Central

Kim, Hyonchol; Terazono, Hideyuki; Takei, Hiroyuki; Yasuda, Kenji

2014-01-01

We propose a new method of size separation of cells exploiting precisely size-controlled hemispherical superparamagnetic microparticles. A three-layered structure of a 2-nm nickel layer inserted between 15-nm silicon dioxide layers was formed on polystyrene cast spheres by vapor deposition. The polystyrene was then removed by burning and the hemispherical superparamagnetic microparticles, “magcups”, were obtained. The standard target cells (CCRF-CEM, 12 ± 2 μm) were mixed with a set of different sizes of the fabricated magcups, and we confirmed that the cells were captured in the magcups having cavities larger than 15 μm in diameter, and then gathered by magnetic force. The collected cells were grown in a culture medium without any damage. The results suggest that this method is quick, simple and non-invasive size separation of target cells. PMID:25219418

Method of forming buried oxide layers in silicon

DOEpatents

Sadana, Devendra Kumar; Holland, Orin Wayne

2000-01-01

A process for forming Silicon-On-Insulator is described incorporating the steps of ion implantation of oxygen into a silicon substrate at elevated temperature, ion implanting oxygen at a temperature below 200.degree. C. at a lower dose to form an amorphous silicon layer, and annealing steps to form a mixture of defective single crystal silicon and polycrystalline silicon or polycrystalline silicon alone and then silicon oxide from the amorphous silicon layer to form a continuous silicon oxide layer below the surface of the silicon substrate to provide an isolated superficial layer of silicon. The invention overcomes the problem of buried isolated islands of silicon oxide forming a discontinuous buried oxide layer.

Fabrication and Characterization of CMOS-MEMS Thermoelectric Micro Generators

PubMed Central

Kao, Pin-Hsu; Shih, Po-Jen; Dai, Ching-Liang; Liu, Mao-Chen

2010-01-01

This work presents a thermoelectric micro generator fabricated by the commercial 0.35 μm complementary metal oxide semiconductor (CMOS) process and the post-CMOS process. The micro generator is composed of 24 thermocouples in series. Each thermocouple is constructed by p-type and n-type polysilicon strips. The output power of the generator depends on the temperature difference between the hot and cold parts in the thermocouples. In order to prevent heat-receiving in the cold part in the thermocouples, the cold part is covered with a silicon dioxide layer with low thermal conductivity to insulate the heat source. The hot part of the thermocouples is suspended and connected to an aluminum plate, to increases the heat-receiving area in the hot part. The generator requires a post-CMOS process to release the suspended structures. The post-CMOS process uses an anisotropic dry etching to remove the oxide sacrificial layer and an isotropic dry etching to etch the silicon substrate. Experimental results show that the micro generator has an output voltage of 67 μV at the temperature difference of 1 K. PMID:22205869

Thin Film Transistors On Plastic Substrates

DOEpatents

Carey, Paul G.; Smith, Patrick M.; Sigmon, Thomas W.; Aceves, Randy C.

2004-01-20

A process for formation of thin film transistors (TFTs) on plastic substrates replaces standard thin film transistor fabrication techniques, and uses sufficiently lower processing temperatures so that inexpensive plastic substrates may be used in place of standard glass, quartz, and silicon wafer-based substrates. The silicon based thin film transistor produced by the process includes a low temperature substrate incapable of withstanding sustained processing temperatures greater than about 250.degree. C., an insulating layer on the substrate, a layer of silicon on the insulating layer having sections of doped silicon, undoped silicon, and poly-silicon, a gate dielectric layer on the layer of silicon, a layer of gate metal on the dielectric layer, a layer of oxide on sections of the layer of silicon and the layer of gate metal, and metal contacts on sections of the layer of silicon and layer of gate metal defining source, gate, and drain contacts, and interconnects.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Vexler, M. I., E-mail: shulekin@mail.ioffe.ru; Grekhov, I. V.

The features of electron tunneling from or into the silicon valence band in a metal–insulator–semiconductor system with the HfO{sub 2}(ZrO{sub 2})/SiO{sub 2} double-layer insulator are theoretically analyzed for different modes. It is demonstrated that the valence-band current plays a less important role in structures with HfO{sub 2}(ZrO{sub 2})/SiO{sub 2} than in structures containing only silicon dioxide. In the case of a very wide-gap high-K oxide ZrO{sub 2}, nonmonotonic behavior related to tunneling through the upper barrier is predicted for the valence-band–metal current component. The use of an insulator stack can offer certain advantages for some devices, including diodes, bipolar tunnel-emittermore » transistors, and resonant-tunneling diodes, along with the traditional use of high-K insulators in a field-effect transistor.« less

Process development of beam-lead silicon-gate COS/MOS integrated circuits

NASA Technical Reports Server (NTRS)

Baptiste, B.; Boesenberg, W.

1974-01-01

Two processes for the fabrication of beam-leaded COS/MOS integrated circuits are described. The first process utilizes a composite gate dielectric of 800 A of silicon dioxide and 450 A of pyrolytically deposited A12O3 as an impurity barrier. The second process utilizes polysilicon gate metallization over which a sealing layer of 1000 A of pyrolytic Si3N4 is deposited. Three beam-lead integrated circuits have been implemented with the first process: (1) CD4000BL - three-input NOR gate; (2) CD4007BL - triple inverter; and (3) CD4013BL - dual D flip flop. An arithmetic and logic unit (ALU) integrated circuit was designed and implemented with the second process. The ALU chip allows addition with four bit accuracy. Processing details, device design and device characterization, circuit performance and life data are presented.

Chemical resistivity of self-assembled monolayer covalently attached to silicon substrate to hydrofluoric acid and ammonium fluoride

NASA Astrophysics Data System (ADS)

Saito, N.; Youda, S.; Hayashi, K.; Sugimura, H.; Takai, O.

2003-06-01

Self-assembled monolayers (SAMs) were prepared on hydrogen-terminated silicon substrates through chemical vapor deposition using 1-hexadecene (HD) as a precursor. The HD-SAMs prepared in an atmosphere under a reduced pressure (≈50 Pa) showed better chemical resistivities to hydrofluoric acid and ammonium fluoride (NH 4F) solutions than that of an organosilane SAM formed on oxide-covered silicon substrates. The surface covered with the HD-SAM was micro-patterned by vacuum ultraviolet photolithography and consequently divided into two areas terminated with HD-SAM or silicon dioxide. This micro-patterned sample was immersed in a 40 vol.% NH 4F aqueous solution. Surface images obtained by an optical microscopy clearly show that the micro-patterns of HD-SAM/silicon dioxide were successfully transferred into the silicon substrate.

GaN Micromechanical Resonators with Meshed Metal Bottom Electrode.

PubMed

Ansari, Azadeh; Liu, Che-Yu; Lin, Chien-Chung; Kuo, Hao-Chung; Ku, Pei-Cheng; Rais-Zadeh, Mina

2015-03-17

This work describes a novel architecture to realize high-performance gallium nitride (GaN) bulk acoustic wave (BAW) resonators. The method is based on the growth of a thick GaN layer on a metal electrode grid. The fabrication process starts with the growth of a thin GaN buffer layer on a Si (111) substrate. The GaN buffer layer is patterned and trenches are made and refilled with sputtered tungsten (W)/silicon dioxide (SiO₂) forming passivated metal electrode grids. GaN is then regrown, nucleating from the exposed GaN seed layer and coalescing to form a thick GaN device layer. A metal electrode can be deposited and patterned on top of the GaN layer. This method enables vertical piezoelectric actuation of the GaN layer using its largest piezoelectric coefficient ( d 33 ) for thickness-mode resonance. Having a bottom electrode also results in a higher coupling coefficient, useful for the implementation of acoustic filters. Growth of GaN on Si enables releasing the device from the frontside using isotropic xenon difluoride (XeF₂) etch and therefore eliminating the need for backside lithography and etching.

Alkali-metal silicate binders and methods of manufacture

NASA Technical Reports Server (NTRS)

Schutt, J. B. (Inventor)

1979-01-01

A paint binder is described which uses a potassium or sodium silicate dispersion having a silicon dioxide to alkali-metal oxide mol ratio of from 4.8:1 to 6.0:1. The binder exhibits stability during both manufacture and storage. The process of making the binder is predictable and repeatable and the binder may be made with inexpensive components. The high mol ratio is achieved with the inclusion of a silicon dioxide hydrogel. The binder, which also employs a silicone, is in the final form of a hydrogel sol.

Apparatus and method of manufacture for an imager equipped with a cross-talk barrier

NASA Technical Reports Server (NTRS)

Pain, Bedabrata (Inventor)

2012-01-01

An imager apparatus and associated starting material are provided. In one embodiment, an imager is provided including a silicon layer of a first conductivity type acting as a junction anode. Such silicon layer is adapted to convert light to photoelectrons. Also included is a semiconductor well of a second conductivity type formed in the silicon layer for acting as a junction cathode. Still yet, a barrier is formed adjacent to the semiconductor well. In another embodiment, a starting material is provided including a first silicon layer and an oxide layer disposed adjacent to the first silicon layer. Also included is a second silicon layer disposed adjacent to the oxide layer opposite the first silicon layer. Such second silicon layer is further equipped with an associated passivation layer and/or barrier.

Graphene on silicon dioxide via carbon ion implantation in copper with PMMA-free transfer

NASA Astrophysics Data System (ADS)

Lehnert, Jan; Spemann, Daniel; Hamza Hatahet, M.; Mändl, Stephan; Mensing, Michael; Finzel, Annemarie; Varga, Aron; Rauschenbach, Bernd

2017-06-01

In this work, a synthesis method for the growth of low-defect large-area graphene using carbon ion beam implantation into metallic Cu foils is presented. The Cu foils (1 cm2 in size) were pre-annealed in a vacuum at 950 °C for 2 h, implanted with 35 keV carbon ions at room temperature, and subsequently annealed at 850 °C for 2 h to form graphene layers with the layer number controlled by the implantation fluence. The graphene was then transferred to SiO2/Si substrates by a PMMA-free wet chemical etching process. The obtained regions of monolayer graphene are of ˜900 μm size. Raman spectroscopy, atomic force microscopy, scanning electron microscopy, and optical microscopy performed at room temperature demonstrated a good quality and homogeneity of the graphene layers, especially for monolayer graphene.

Comparison of the marginal fit of milled yttrium stabilized zirconium dioxide crowns obtained by scanning silicone impressions and by scanning stone replicas.

PubMed

Aranda Yus, Estefanía; Cantarell, Josep Maria Anglada; Miñarro Alonso, Antonio

2018-06-01

To determine the discrepancy in monolithic zirconium dioxide crowns made with computer-aided design and computer-aided manufacturing (CAD/CAM) systems by comparing scans of silicone impressions and of master casts. From a Cr-Co master die of a first upper left molar, 30 silicone impressions were taken. The 30 silicone impressions were scanned with the laboratory scanner, thus obtaining 30 milled monolithic yttrium stabilized zirconium dioxide (YSZD) crowns (the silicone group). They were poured and the working models were scanned, obtaining 30 milled monolithic yttrium stabilized zirconium dioxide (YSZD) crowns (the plaster group). Three predetermined points were analyzed in each side of the crown (Mesial, Distal ,Vestibular and Palatal), and the marginal fit was evaluated with SEM (×600). The response variable is the discrepancy from the master model. A repeated measures ANOVA with two within subject factors was performed to study significance of main factors and interaction. Mean marginal discrepancy was 22.42±35.65 µm in the silicone group and 8.94±14.69 µm in the plaster group. The statistical analysis showed significant differences between the two groups and also among the four aspects. Interaction was also significant ( P =.02). The mean marginal fit values of the two groups were within the clinically acceptable values. Significant differences were found between the groups according to the aspects studied. Various factors influenced the accuracy of digitizing, such as the design, the geometry, and the preparation guidance, as well as the texture, roughness and the color of the scanned material.

Perovskite Solar Cells for High-Efficiency Tandems

DOE Office of Scientific and Technical Information (OSTI.GOV)

McGehee, Michael; Buonassisi, Tonio

The first monolithic perovskite/silicon tandem was made with a diffused silicon p-n junction, a tunnel junction made of n ++ hydrogenated amorphous silicon, a titania electron transport layer, a methylammonium lead iodide absorber, and a Spiro-OMeTAD hole transport layer (HTL). The power conversion efficiency (PCE) was only 13.7% due to excessive parasitic absorption of light in the HTL, limiting the matched current density to 11.5 mA/cm 2. Werner et al. 15 raised the PCE to a record 21.2% by switching to a silicon heterojunction bottom cell and carefully tuning layer thicknesses to achieve lower optical loss and a higher currentmore » density of 15.9 mA/cm 2. It is clear from these reports that minimizing parasitic absorption in the window layers is crucial to achieving higher current densities and efficiencies in monolithic tandems. To this end, the window layers through which light first passes before entering the perovskite and silicon absorber materials must be highly transparent. The front electrode must also be conductive to carry current laterally across the top of the device. Indium tin oxide (ITO) is widely utilized as a transparent electrode in optoelectronic devices such as flat-panel displays, smart windows, organic light-emitting diodes, and solar cells due to its high conductivity and broadband transparency. ITO is typically deposited through magnetron sputtering; however, the high kinetic energy of sputtered particles can damage underlying layers. In perovskite solar cells, a sputter buffer layer is required to protect the perovskite and organic carrier extraction layers from damage during sputter deposition. The ideal buffer layer should also be energetically well aligned so as to act as a carrier-selective contact, have a wide bandgap to enable high optical transmission, and have no reaction with the halides in the perovskite. Additionally, this buffer layer should act as a diffusion barrier layer to prevent both organic cation evolution and moisture penetration to overcome the often-reported thermal and environmental instability of metal halide perovskites. Previous perovskite-containing tandems utilized molybdenum oxide (MoO x) as a sputter buffer layer, but this has raised concerns over long-term stability, as the iodide in the perovskite can chemically react with MoO x. Mixed-cation perovskite solar cells have consistently outperformed their single-cation counterparts. The first perovskite device to exceed 20% PCE was fabricated with a mixture of methylammonium (MA) and formamidinium (FA). Recent reports have shown promising results with the introduction of cesium mixtures, enabling high efficiencies with improved photo-, moisture, and thermal stability. The increased moisture and thermal stability are especially important as they broaden the parameter space for processing on top of the perovskite, enabling the deposition of metal oxide contacts through atomic layer deposition (ALD) or chemical vapor deposition (CVD) that may require elevated temperatures or water as a counter reagent. Both titanium dioxide (TiO 2) and tin oxide (SnO 2) have consistently proven to be effective electron-selective contacts for perovskite solar cells and both can be deposited via ALD at temperatures below 150 °C. We introduced a bilayer of SnO 2 and zinc tin oxide (ZTO) that can be deposited by either low-temperature ALD or pulsed-CVD as a window layer with minimal parasitic absorption, efficient electron extraction, and sufficient buffer properties to prevent the organic and perovskite layers from damage during the subsequent sputter deposition of a transparent ITO electrode. We explored pulsed-CVD as a modified ALD process with a continual, rather than purely step-wise, growth component in order to considerably reduce the process time of the SnO 2 deposition process and minimize potential perovskite degradation. These layers, when used in an excellent mixed-cation perovskite solar cell atop a silicon solar cell tuned to the infrared spectrum, enable highly efficient perovskite-silicon tandem solar cells with enhanced thermal and environmental stability.« less

Array of titanium dioxide nanostructures for solar energy utilization

DOEpatents

Qiu, Xiaofeng; Parans Paranthaman, Mariappan; Chi, Miaofang; Ivanov, Ilia N; Zhang, Zhenyu

2014-12-30

An array of titanium dioxide nanostructures for solar energy utilization includes a plurality of nanotubes, each nanotube including an outer layer coaxial with an inner layer, where the inner layer comprises p-type titanium dioxide and the outer layer comprises n-type titanium dioxide. An interface between the inner layer and the outer layer defines a p-n junction.

Carrier Selective, Passivated Contacts for High Efficiency Silicon Solar Cells based on Transparent Conducting Oxides

DOE PAGES

Young, David L.; Nemeth, William; Grover, Sachit; ...

2014-01-01

We describe the design, fabrication and results of passivated contacts to n-type silicon utilizing thin SiO 2 and transparent conducting oxide layers. High temperature silicon dioxide is grown on both surfaces of an n-type wafer to a thickness <50 Å, followed by deposition of tin-doped indium oxide (ITO) and a patterned metal contacting layer. As deposited, the thin-film stack has a very high J0, contact, and a non-ohmic, high contact resistance. However, after a forming gas anneal, the passivation quality and the contact resistivity improve significantly. The contacts are characterized by measuring the recombination parameter of the contact (J0, contact)more » and the specific contact resistivity (ρ contact) using a TLM pattern. The best ITO/SiO 2 passivated contact in this study has J 0,contact = 92.5 fA/cm 2 and ρ contact = 11.5 mOhm-cm 2. These values are placed in context with other passivating contacts using an analysis that determines the ultimate efficiency and the optimal area fraction for contacts for a given set of (J0, contact, ρ contact) values. The ITO/SiO 2 contacts are found to have a higher J0, contact, but a similar ρ contact compared to the best reported passivated contacts.« less

Proposed pushered single shell capsule design for the investigation of mid/high Z mix on the NIF

NASA Astrophysics Data System (ADS)

Sacks, Ryan; Tipton, Robert; Graziani, Frank

2016-05-01

The CD Mix campaign has given a detailed explination of the mix mechanics in the current ignition capsule designs by investigating the relationship between material mixing, shell-fuel interfaces, and the change in thermonuclear yield given a deuterated layer in the capsule. Alternative ignition scenarios include the use of double shell designs that incorporate high-Z material in the capsule. Simulations are conducted on a proposed capsule platform using the ARES code on a scaled capsule design using a partially reduced glass capsule design. This allows for the inclusion of deuterium on the inner surface of the pusher layer similar to the CD mix experiments. The presence of silicon dioxide allows for the investigation of the influence of higher Z material on the mixing characteristics.

Rapid vapor deposition of highly conformal silica nanolaminates.

PubMed

Hausmann, Dennis; Becker, Jill; Wang, Shenglong; Gordon, Roy G

2002-10-11

Highly uniform and conformal coatings can be made by the alternating exposures of a surface to vapors of two reactants, in a process commonly called atomic layer deposition (ALD). The application of ALD has, however, been limited because of slow deposition rates, with a theoretical maximum of one monolayer per cycle. We show that alternating exposure of a surface to vapors of trimethylaluminum and tris(tert-butoxy)silanol deposits highly conformal layers of amorphous silicon dioxide and aluminum oxide nanolaminates at rates of 12 nanometers (more than 32 monolayers) per cycle. This process allows for the uniform lining or filling of long, narrow holes. We propose that these ALD layers grow by a previously unknown catalytic mechanism that also operates during the rapid ALD of many other metal silicates. This process should allow improved production of many devices, such as trench insulation between transistors in microelectronics, planar waveguides, microelectromechanical structures, multilayer optical filters, and protective layers against diffusion, oxidation, or corrosion.

A study of the kinetics of isothermal nicotine desorption from silicon dioxide

NASA Astrophysics Data System (ADS)

Adnadjevic, Borivoj; Lazarevic, Natasa; Jovanovic, Jelena

2010-12-01

The isothermal kinetics of nicotine desorption from silicon dioxide (SiO 2) was investigated. The isothermal thermogravimetric curves of nicotine at temperatures of 115 °C, 130 °C and 152 °C were recorded. The kinetic parameters ( Ea, ln A) of desorption of nicotine were calculated using various methods (stationary point, model constants and differential isoconversion method). By applying the "model-fitting" method, it was found that the kinetic model of nicotine desorption from silicon dioxide was a phase boundary controlled reaction (contracting volume). The values of the kinetic parameters, Ea,α and ln Aα, complexly change with changing degree of desorption and a compensation effect exists. A new mechanism of activation for the desorption of the absorbed molecules of nicotine was suggested in agreement with model of selective energy transfer.

Skin penetration of silicon dioxide microneedle arrays.

PubMed

Kim, Sangchae; Shetty, S; Price, D; Bhansali, S

2006-01-01

Out-of-plane hollow silicon dioxide microneedle arrays were fabricated and investigated to determine their efficacy for transdermal applications. The fabrication process of the SiO2 microneedles is described, and mechanical fracture forces were investigated on microneedles with different geometrical dimensions. Biomechanical characterization of the microneedles was performed to specifically test for reliable stratum corneum and skin insertion by changing the regulatory parameters such as needle width and cross-section.

Nitridation of SiO2 for surface passivation

NASA Technical Reports Server (NTRS)

Lai, S. K. C.

1985-01-01

An attempt is made to relate the electrical properties of silicon dioxide film to the process history. A model is proposed to explain some of the observed results. It is shown that with our present knowledge of the dielectric, silicon dioxide film shows a lot of promise for its use in surface passivation, both for its resistance to impurity diffusion and for its resistance to radiation damage effects.

Atomic-Layer-Deposited Transparent Electrodes for Silicon Heterojunction Solar Cells

DOE PAGES

Demaurex, Benedicte; Seif, Johannes P.; Smit, Sjoerd; ...

2014-11-01

We examine damage-free transparent-electrode deposition to fabricate high-efficiency amorphous silicon/crystalline silicon heterojunction solar cells. Such solar cells usually feature sputtered transparent electrodes, the deposition of which may damage the layers underneath. Using atomic layer deposition, we insert thin protective films between the amorphous silicon layers and sputtered contacts and investigate their effect on device operation. We find that a 20-nm-thick protective layer suffices to preserve, unchanged, the amorphous silicon layers beneath. Insertion of such protective atomic-layer-deposited layers yields slightly higher internal voltages at low carrier injection levels. However, we identify the presence of a silicon oxide layer, formed during processing,more » between the amorphous silicon and the atomic-layer-deposited transparent electrode that acts as a barrier, impeding hole and electron collection.« less

Epitaxial growth of silicon for layer transfer

DOEpatents

Teplin, Charles; Branz, Howard M

2015-03-24

Methods of preparing a thin crystalline silicon film for transfer and devices utilizing a transferred crystalline silicon film are disclosed. The methods include preparing a silicon growth substrate which has an interface defining substance associated with an exterior surface. The methods further include depositing an epitaxial layer of silicon on the silicon growth substrate at the surface and separating the epitaxial layer from the substrate substantially along the plane or other surface defined by the interface defining substance. The epitaxial layer may be utilized as a thin film of crystalline silicon in any type of semiconductor device which requires a crystalline silicon layer. In use, the epitaxial transfer layer may be associated with a secondary substrate.

Effect of SiO2 coating layer morphology on TiH2 gas release characteristic.

PubMed

Yang, Zhimao; Fang, Jixiang; Ding, Bingjun

2005-10-15

In this study, a uniform and compact SiO2 film-coating layer was prepared on the surface of TiH2 particles by sol-gel method using inexpensive raw materials. The preparation process of SiO2-coated TiH2 particles and the effect of the coating layer morphology on the gas release characteristic were investigated in detail. When the pH value of TiH2 suspending solution is about 4.0 and the concentration of silicic acid is more than 0.5 mol/L, the coating layer shows a SiO2 particle-coating morphology. While a homogeneous and dense film-coating layer can be obtained when the solution pH value and concentration of silicic acid are about 4.0 and 0.5 mol/L. The results of gas release at 700 degrees C show that TiH2 particles coated with silicon dioxide layers can efficiently delay the starting time of gas release of TiH2 powders to 60-100 s. Comparing the particle-coating layer, the SiO2 film-coating layer has a better delaying effect on gas release of TiH2 particles.

Theoretical Study of Monolayer and Double-Layer Waveguide Love Wave Sensors for Achieving High Sensitivity.

PubMed

Li, Shuangming; Wan, Ying; Fan, Chunhai; Su, Yan

2017-03-22

Love wave sensors have been widely used for sensing applications. In this work, we introduce the theoretical analysis of the monolayer and double-layer waveguide Love wave sensors. The velocity, particle displacement and energy distribution of Love waves were analyzed. Using the variations of the energy repartition, the sensitivity coefficients of Love wave sensors were calculated. To achieve a higher sensitivity coefficient, a thin gold layer was added as the second waveguide on top of the silicon dioxide (SiO₂) waveguide-based, 36 degree-rotated, Y-cut, X-propagating lithium tantalate (36° YX LiTaO₃) Love wave sensor. The Love wave velocity was significantly reduced by the added gold layer, and the flow of wave energy into the waveguide layer from the substrate was enhanced. By using the double-layer structure, almost a 72-fold enhancement in the sensitivity coefficient was achieved compared to the monolayer structure. Additionally, the thickness of the SiO₂ layer was also reduced with the application of the gold layer, resulting in easier device fabrication. This study allows for the possibility of designing and realizing robust Love wave sensors with high sensitivity and a low limit of detection.

Design and fabrication of thin-film polarizer at wavelength of 1540 nm and investigation of its laser-induced damage threshold

NASA Astrophysics Data System (ADS)

Sahraee, Masoume; Fallah, Hamid Reza; Moradi, Badri; Zabolian, Hosein; Mahmoodzade, Morteza Haji

2014-12-01

In this paper a thin-film polarizer at a wavelength of 1540 nm was designed and fabricated. These types of polarizer are usually used in laser systems to obtain linearly polarized light beams. Our design consists of a system of eighteen dielectric thin-film layers from repeated pairs of titanium dioxide and silicon dioxide layers that are deposited on a BK7 glass substrate. Design was carried out based on theoretical principles and computer calculations. Thin-film design software was used for designing the polarizer. The angle of incidence was supposed to be 56° that is the Browster angle for BK7 glass. Performance and laser-induced damage threshold of the polarizer were enhanced by a suitable selection of various parameters including thickness of each layer, their number and the electric field distribution of layers. After several designs, fabrications and refinement of parameters, the final polarizer was designed. Then the final sample of the polarizer was prepared using the electron beam evaporation (EBE) technique with Balzers BAK 760 coating machine. Spectral transmittance of the sample was measured by Shimadzu 3100 UV-VIS-NIR spectrophotometer. Investigation of spectral transmittance showed that at a wavelength of 1540nm, the transmission of P polarization is 87.82 and the transmission of S polarization is 0.43 which show a ratio ( T P / T S of 204. So, this ratio is an acceptable value for our desired polarizer.

Silicone metalization

DOEpatents

Maghribi, Mariam N [Livermore, CA; Krulevitch, Peter [Pleasanton, CA; Hamilton, Julie [Tracy, CA

2006-12-05

A system for providing metal features on silicone comprising providing a silicone layer on a matrix and providing a metal layer on the silicone layer. An electronic apparatus can be produced by the system. The electronic apparatus comprises a silicone body and metal features on the silicone body that provide an electronic device.

Silicone metalization

DOEpatents

Maghribi, Mariam N.; Krulevitch, Peter; Hamilton, Julie

2008-12-09

A system for providing metal features on silicone comprising providing a silicone layer on a matrix and providing a metal layer on the silicone layer. An electronic apparatus can be produced by the system. The electronic apparatus comprises a silicone body and metal features on the silicone body that provide an electronic device.

Wavelength dependent vertical integration of nanoplasmonic circuits utilizing coupled ring resonators

NASA Astrophysics Data System (ADS)

Nielsen, M.; Elezzabi, A. Y.

2013-03-01

To become a competitor to replace CMOS-electronics for next-generation data processing, signal routing, and computing, nanoplasmonic circuits will require an analogue to electrical vias in order to enable vertical connections between device layers. Vertically stacked nanoplasmonic nanoring resonators formed of Ag/Si/Ag gap plasmon waveguides were studied as a novel 3-D coupling scheme that could be monolithically integrated on a silicon platform. The vertically coupled ring resonators were evanescently coupled to 100 nm x 100 nm Ag/Si/Ag input and output waveguides and the whole device was submerged in silicon dioxide. 3-D finite difference time domain simulations were used to examine the transmission spectra of the coupling device with varying device sizes and orientations. By having the signal coupling occur over multiple trips around the resonator, coupling efficiencies as high as 39% at telecommunication wavelengths between adjacent layers were present with planar device areas of only 1.00 μm2. As the vertical signal transfer was based on coupled ring resonators, the signal transfer was inherently wavelength dependent. Changing the device size by varying the radii of the nanorings allowed for tailoring the coupled frequency spectra. The plasmonic resonator based coupling scheme was found to have quality (Q) factors of upwards of 30 at telecommunication wavelengths. By allowing different device layers to operate on different wavelengths, this coupling scheme could to lead to parallel processing in stacked independent device layers.

Random Surface Texturing of Silicon Dioxide Using Gold Agglomerates

DTIC Science & Technology

2016-07-01

Approved for public release; distribution unlimited. 1 1. Introduction The US Army has been developing new types of photovoltaic ( PV ) devices— solar ...light falling onto the surface of a solar cell is a major optical loss mechanism, which limits the efficiency of the PV .1,2 One method of reducing...in an AR coating on solar cells. 15. SUBJECT TERMS anti-reflective, AR coatings, textured surface structures, silicon dioxide, SiO2 16. SECURITY

Platinum metallization for MEMS application

PubMed Central

Guarnieri, Vittorio; Biazi, Leonardo; Marchiori, Roberto; Lago, Alexandre

2014-01-01

The adherence of Platinum thin film on Si/SiO2 wafer was studies using Chromium, Titanium or Alumina (Cr, Ti, Al2O3) as interlayer. The adhesion of Pt is a fundamental property in different areas, for example in MEMS devices, which operate at high temperature conditions, as well as in biomedical applications, where the problem of adhesion of a Pt film to the substrate is known as a major challenge in several industrial applications health and in biomedical devices, such as for example in the stents.1-4 We investigated the properties of Chromium, Titanium, and Alumina (Cr, Ti, and Al2O3) used as adhesion layers of Platinum (Pt) electrode. Thin films of Chromium, Titanium and Alumina were deposited on Silicon/Silicon dioxide (Si/SiO2) wafer by electron beam. We introduced Al2O3 as a new adhesion layer to test the behavior of the Pt film at higher temperature using a ceramic adhesion thin film. Electric behaviors were measured for different annealing temperatures to know the performance for Cr/Pt, Ti/Pt, and Al2O3/Pt metallic film in the gas sensor application. All these metal layers showed a good adhesion onto Si/SiO2 and also good Au wire bondability at room temperature, but for higher temperature than 400 °C the thin Cr/Pt and Ti/Pt films showed poor adhesion due to the atomic inter-diffusion between Platinum and the metal adhesion layers.5 The proposed Al2O3/Pt ceramic-metal layers confirmed a better adherence for the higher temperatures tested. PMID:24743057

Strain-Compensated InGaAsP Superlattices for Defect Reduction of InP Grown on Exact-Oriented (001) Patterned Si Substrates by Metal Organic Chemical Vapor Deposition.

PubMed

Megalini, Ludovico; Šuran Brunelli, Simone Tommaso; Charles, William O; Taylor, Aidan; Isaac, Brandon; Bowers, John E; Klamkin, Jonathan

2018-02-26

We report on the use of InGaAsP strain-compensated superlattices (SC-SLs) as a technique to reduce the defect density of Indium Phosphide (InP) grown on silicon (InP-on-Si) by Metal Organic Chemical Vapor Deposition (MOCVD). Initially, a 2 μm thick gallium arsenide (GaAs) layer was grown with very high uniformity on exact oriented (001) 300 mm Si wafers; which had been patterned in 90 nm V-grooved trenches separated by silicon dioxide (SiO₂) stripes and oriented along the [110] direction. Undercut at the Si/SiO₂ interface was used to reduce the propagation of defects into the III-V layers. Following wafer dicing; 2.6 μm of indium phosphide (InP) was grown on such GaAs-on-Si templates. InGaAsP SC-SLs and thermal annealing were used to achieve a high-quality and smooth InP pseudo-substrate with a reduced defect density. Both the GaAs-on-Si and the subsequently grown InP layers were characterized using a variety of techniques including X-ray diffraction (XRD); atomic force microscopy (AFM); transmission electron microscopy (TEM); and electron channeling contrast imaging (ECCI); which indicate high-quality of the epitaxial films. The threading dislocation density and RMS surface roughness of the final InP layer were 5 × 10⁸/cm² and 1.2 nm; respectively and 7.8 × 10⁷/cm² and 10.8 nm for the GaAs-on-Si layer.

Strain-Compensated InGaAsP Superlattices for Defect Reduction of InP Grown on Exact-Oriented (001) Patterned Si Substrates by Metal Organic Chemical Vapor Deposition

PubMed Central

Megalini, Ludovico; Šuran Brunelli, Simone Tommaso; Charles, William O.; Taylor, Aidan; Isaac, Brandon; Klamkin, Jonathan

2018-01-01

We report on the use of InGaAsP strain-compensated superlattices (SC-SLs) as a technique to reduce the defect density of Indium Phosphide (InP) grown on silicon (InP-on-Si) by Metal Organic Chemical Vapor Deposition (MOCVD). Initially, a 2 μm thick gallium arsenide (GaAs) layer was grown with very high uniformity on exact oriented (001) 300 mm Si wafers; which had been patterned in 90 nm V-grooved trenches separated by silicon dioxide (SiO2) stripes and oriented along the [110] direction. Undercut at the Si/SiO2 interface was used to reduce the propagation of defects into the III–V layers. Following wafer dicing; 2.6 μm of indium phosphide (InP) was grown on such GaAs-on-Si templates. InGaAsP SC-SLs and thermal annealing were used to achieve a high-quality and smooth InP pseudo-substrate with a reduced defect density. Both the GaAs-on-Si and the subsequently grown InP layers were characterized using a variety of techniques including X-ray diffraction (XRD); atomic force microscopy (AFM); transmission electron microscopy (TEM); and electron channeling contrast imaging (ECCI); which indicate high-quality of the epitaxial films. The threading dislocation density and RMS surface roughness of the final InP layer were 5 × 108/cm2 and 1.2 nm; respectively and 7.8 × 107/cm2 and 10.8 nm for the GaAs-on-Si layer. PMID:29495381

Weakly modulated silicon-dioxide-cladding gratings for silicon waveguide Fabry-Pérot cavities.

PubMed

Grote, Richard R; Driscoll, Jeffrey B; Biris, Claudiu G; Panoiu, Nicolae C; Osgood, Richard M

2011-12-19

We show by theory and experiment that silicon-dioxide-cladding gratings for Fabry-Pérot cavities on silicon-on-insulator channel ("wire") waveguides provide a low-refractive-index perturbation, which is required for several important integrated photonics components. The underlying refractive index perturbation of these gratings is significantly weaker than that of analogous silicon gratings, leading to finer control of the coupling coefficient κ. Our Fabry-Pérot cavities are designed using the transfer-matrix method (TMM) in conjunction with the finite element method (FEM) for calculating the effective index of each waveguide section. Device parameters such as coupling coefficient, κ, Bragg mirror stop band, Bragg mirror reflectivity, and quality factor Q are examined via TMM modeling. Devices are fabricated with representative values of distributed Bragg reflector lengths, cavity lengths, and propagation losses. The measured transmission spectra show excellent agreement with the FEM/TMM calculations.

Ion irradiation of the native oxide/silicon surface increases the thermal boundary conductance across aluminum/silicon interfaces

NASA Astrophysics Data System (ADS)

Gorham, Caroline S.; Hattar, Khalid; Cheaito, Ramez; Duda, John C.; Gaskins, John T.; Beechem, Thomas E.; Ihlefeld, Jon F.; Biedermann, Laura B.; Piekos, Edward S.; Medlin, Douglas L.; Hopkins, Patrick E.

2014-07-01

The thermal boundary conductance across solid-solid interfaces can be affected by the physical properties of the solid boundary. Atomic composition, disorder, and bonding between materials can result in large deviations in the phonon scattering mechanisms contributing to thermal boundary conductance. Theoretical and computational studies have suggested that the mixing of atoms around an interface can lead to an increase in thermal boundary conductance by creating a region with an average vibrational spectra of the two materials forming the interface. In this paper, we experimentally demonstrate that ion irradiation and subsequent modification of atoms at solid surfaces can increase the thermal boundary conductance across solid interfaces due to a change in the acoustic impedance of the surface. We measure the thermal boundary conductance between thin aluminum films and silicon substrates with native silicon dioxide layers that have been subjected to proton irradiation and post-irradiation surface cleaning procedures. The thermal boundary conductance across the Al/native oxide/Si interfacial region increases with an increase in proton dose. Supported with statistical simulations, we hypothesize that ion beam mixing of the native oxide and silicon substrate within ˜2.2nm of the silicon surface results in the observed increase in thermal boundary conductance. This ion mixing leads to the spatial gradation of the silicon native oxide into the silicon substrate, which alters the acoustic impedance and vibrational characteristics at the interface of the aluminum film and native oxide/silicon substrate. We confirm this assertion with picosecond acoustic analyses. Our results demonstrate that under specific conditions, a "more disordered and defected" interfacial region can have a lower resistance than a more "perfect" interface.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Donnelly, Vincent M.; Kornblit, Avinoam

The field of plasma etching is reviewed. Plasma etching, a revolutionary extension of the technique of physical sputtering, was introduced to integrated circuit manufacturing as early as the mid 1960s and more widely in the early 1970s, in an effort to reduce liquid waste disposal in manufacturing and achieve selectivities that were difficult to obtain with wet chemistry. Quickly, the ability to anisotropically etch silicon, aluminum, and silicon dioxide in plasmas became the breakthrough that allowed the features in integrated circuits to continue to shrink over the next 40 years. Some of this early history is reviewed, and a discussionmore » of the evolution in plasma reactor design is included. Some basic principles related to plasma etching such as evaporation rates and Langmuir–Hinshelwood adsorption are introduced. Etching mechanisms of selected materials, silicon, silicon dioxide, and low dielectric-constant materials are discussed in detail. A detailed treatment is presented of applications in current silicon integrated circuit fabrication. Finally, some predictions are offered for future needs and advances in plasma etching for silicon and nonsilicon-based devices.« less

Pinpoint and bulk electrochemical reduction of insulating silicon dioxide to silicon.

PubMed

Nohira, Toshiyuki; Yasuda, Kouji; Ito, Yasuhiko

2003-06-01

Silicon dioxide (SiO(2)) is conventionally reduced to silicon by carbothermal reduction, in which the oxygen is removed by a heterogeneous-homogeneous reaction sequence at approximately 1,700 degrees C. Here we report pinpoint and bulk electrochemical methods for removing oxygen from solid SiO(2) in a molten CaCl(2) electrolyte at 850 degrees C. This approach involves a 'contacting electrode', in which a metal wire supplies electrons to a selected region of the insulating SiO(2). Bulk reduction of SiO(2) is possible by increasing the number of contacting points. The same method was also demonstrated with molten LiCl-KCl-CaCl(2) at 500 degrees C. The novelty and relative simplicity of this method might lead to new processes in silicon semiconductor technology, as well as in high-purity silicon production. The methodology may be applicable to electrochemical processing of a wide variety of insulating materials, provided that the electrolyte dissolves the appropriate constituent ion(s) of the material.

Thickening compositions, and related materials and processes

DOE Office of Scientific and Technical Information (OSTI.GOV)

O'Brien, Michael Joseph; Perry, Robert James; Enick, Robert Michael

A silicone polymer is provided, modified with at least one functional group from the class of anthraquinone amide groups; anthraquinone sulfonamide groups; thioxanthone amide groups; or thioxanthone sulfone amide groups. The polymer can be combined with a hydrocarbon solvent or with supercritical carbon dioxide (CO.sub.2), and is very effective for increasing the viscosity of either medium. A process for the recovery of oil from a subterranean, oil-bearing formation is also described, using supercritical carbon dioxide modified with the functionalized silicone polymer. A process for extracting natural gas or oil from a bedrock-shale formation is also described, again using the modifiedmore » silicone polymer.« less

Surface acoustic wave/silicon monolithic sensor/processor

NASA Technical Reports Server (NTRS)

Kowel, S. T.; Kornreich, P. G.; Nouhi, A.; Kilmer, R.; Fathimulla, M. A.; Mehter, E.

1983-01-01

A new technique for sputter deposition of piezoelectric zinc oxide (ZnO) is described. An argon-ion milling system was converted to sputter zinc oxide films in an oxygen atmosphere using a pure zinc oxide target. Piezoelectric films were grown on silicon dioxide and silicon dioxide overlayed with gold. The sputtered films were evaluated using surface acoustic wave measurements, X-ray diffraction, scanning electron microscopy, Auger electron spectroscopy, and resistivity measurements. The effect of the sputtering conditions on the film quality and the result of post-deposition annealing are discussed. The application of these films to the generation of surface acoustic waves is also discussed.

Solar cell with silicon oxynitride dielectric layer

DOEpatents

Shepherd, Michael; Smith, David D

2015-04-28

Solar cells with silicon oxynitride dielectric layers and methods of forming silicon oxynitride dielectric layers for solar cell fabrication are described. For example, an emitter region of a solar cell includes a portion of a substrate having a back surface opposite a light receiving surface. A silicon oxynitride (SiO.sub.xN.sub.y, 0

Silica-forming articles having engineered surfaces to enhance resistance to creep sliding under high-temperature loading

DOE Office of Scientific and Technical Information (OSTI.GOV)

Lipkin, Don Mark; Johnson, Curtis Alan; Meschter, Peter Joel

An article includes a silicon-containing region; at least one outer layer overlying a surface of the silicon-containing region; and a constituent layer on the surface of the silicon-containing region and between and contacting the silicon-containing region and the at least one outer layer, the constituent layer being formed by constituents of the silicon-containing region and being susceptible to creep within an operating environment of the article, wherein the silicon-containing region defines a plurality of channels and a plurality of ridges that interlock within the plurality of channels are formed in the silicon-containing region to physically interlock the at least onemore » outer layer with the silicon-containing region through the constituent layer.« less

Silicon dioxide space coatings studied ellipsometrically

NASA Technical Reports Server (NTRS)

De, Bhola N.; Zhao, Yong; Hruska, Jane; Peterkin, Jane; Woollam, John A.

1990-01-01

Mechanisms of initial oxidation of silicon for the formation of silicon dioxide have been investigated. The oxidation of silicon in an atomic oxigen plasma environment is found to exhibit two distinct and linear oxide growth curves for each of the plasma powers used in ashing (25, 50, and 100 watts). Data obtained indicate that the exponent to the pressure in the oxide growth rate formula changes from 1.4 + or - 0.1 to 0.7 + or - 0.1 as one crosses the critical thickness. These data contradict the theory predicting that this exponent should be 1 for both regimes. The activation energy for oxidation in the zone reaction regime is found to be 0.17 eV, in contrast to the published value of 1-2 eV for thermally grown oxides.

Atomic Layer Deposition of Chemical Passivation Layers and High Performance Anti-Reflection Coatings on Back-Illuminated Detectors

NASA Technical Reports Server (NTRS)

Hoenk, Michael E. (Inventor); Greer, Frank (Inventor); Nikzad, Shouleh (Inventor)

2014-01-01

A back-illuminated silicon photodetector has a layer of Al2O3 deposited on a silicon oxide surface that receives electromagnetic radiation to be detected. The Al2O3 layer has an antireflection coating deposited thereon. The Al2O3 layer provides a chemically resistant separation layer between the silicon oxide surface and the antireflection coating. The Al2O3 layer is thin enough that it is optically innocuous. Under deep ultraviolet radiation, the silicon oxide layer and the antireflection coating do not interact chemically. In one embodiment, the silicon photodetector has a delta-doped layer near (within a few nanometers of) the silicon oxide surface. The Al2O3 layer is expected to provide similar protection for doped layers fabricated using other methods, such as MBE, ion implantation and CVD deposition.

21 CFR 73.1575 - Titanium dioxide.

Code of Federal Regulations, 2011 CFR

2011-04-01

... 21 Food and Drugs 1 2011-04-01 2011-04-01 false Titanium dioxide. 73.1575 Section 73.1575 Food and Drugs FOOD AND DRUG ADMINISTRATION, DEPARTMENT OF HEALTH AND HUMAN SERVICES GENERAL LISTING OF COLOR... additive mixtures for coloring drugs, and the following: Silicon dioxide, SiO2, and/or aluminum oxide...

Thermophysical Properties of Matter - the TPRC Data Series. Volume 5. Specific Heat - Nonmetallic Solids

DTIC Science & Technology

1970-01-01

Fluorides. 915 18. Hydrides . 1033 19. Nitrides . 1075 20. Carbonates 1109 21. Nitrates and Nitrites. 1139 22. Sulfates 1161 23. Glasses and Cermets 1227... glass ) SiO2 .... ............... 202 62B Silicon Dioxide (Quartz crystal) SiO2 .... ............... 207 62C Silicon Dioxide (Cristobalite) SiO2...ydrate Na2S0 4 -101120. ... ..... 1221 386 Zinc Sulfate lieptahydrate ZnS04 71120 .. .. ...... 1224 23. GLASSES and CERMIETS 387 Aluiminosilicate Glass 10

Silicon Dioxide Thin Film Mediated Single Cell Nucleic Acid Isolation

PubMed Central

Bogdanov, Evgeny; Dominova, Irina; Shusharina, Natalia; Botman, Stepan; Kasymov, Vitaliy; Patrushev, Maksim

2013-01-01

A limited amount of DNA extracted from single cells, and the development of single cell diagnostics make it necessary to create a new highly effective method for the single cells nucleic acids isolation. In this paper, we propose the DNA isolation method from biomaterials with limited DNA quantity in sample, and from samples with degradable DNA based on the use of solid-phase adsorbent silicon dioxide nanofilm deposited on the inner surface of PCR tube. PMID:23874571

Selective-area growth of GaN nanowires on SiO{sub 2}-masked Si (111) substrates by molecular beam epitaxy

DOE Office of Scientific and Technical Information (OSTI.GOV)

Kruse, J. E.; Doundoulakis, G.; Institute of Electronic Structure and Laser, Foundation for Research and Technology–Hellas, N. Plastira 100, 70013 Heraklion

2016-06-14

We analyze a method to selectively grow straight, vertical gallium nitride nanowires by plasma-assisted molecular beam epitaxy (MBE) at sites specified by a silicon oxide mask, which is thermally grown on silicon (111) substrates and patterned by electron-beam lithography and reactive-ion etching. The investigated method requires only one single molecular beam epitaxy MBE growth process, i.e., the SiO{sub 2} mask is formed on silicon instead of on a previously grown GaN or AlN buffer layer. We present a systematic and analytical study involving various mask patterns, characterization by scanning electron microscopy, transmission electron microscopy, and photoluminescence spectroscopy, as well asmore » numerical simulations, to evaluate how the dimensions (window diameter and spacing) of the mask affect the distribution of the nanowires, their morphology, and alignment, as well as their photonic properties. Capabilities and limitations for this method of selective-area growth of nanowires have been identified. A window diameter less than 50 nm and a window spacing larger than 500 nm can provide single nanowire nucleation in nearly all mask windows. The results are consistent with a Ga diffusion length on the silicon dioxide surface in the order of approximately 1 μm.« less

Mechanical properties of silicon in subsurface damage layer from nano-grinding studied by atomistic simulation

NASA Astrophysics Data System (ADS)

Zhang, Zhiwei; Chen, Pei; Qin, Fei; An, Tong; Yu, Huiping

2018-05-01

Ultra-thin silicon wafer is highly demanded by semi-conductor industry. During wafer thinning process, the grinding technology will inevitably induce damage to the surface and subsurface of silicon wafer. To understand the mechanism of subsurface damage (SSD) layer formation and mechanical properties of SSD layer, atomistic simulation is the effective tool to perform the study, since the SSD layer is in the scale of nanometer and hardly to be separated from underneath undamaged silicon. This paper is devoted to understand the formation of SSD layer, and the difference between mechanical properties of damaged silicon in SSD layer and ideal silicon. With the atomistic model, the nano-grinding process could be performed between a silicon workpiece and diamond tool under different grinding speed. To reach a thinnest SSD layer, nano-grinding speed will be optimized in the range of 50-400 m/s. Mechanical properties of six damaged silicon workpieces with different depths of cut will be studied. The SSD layer from each workpiece will be isolated, and a quasi-static tensile test is simulated to perform on the isolated SSD layer. The obtained stress-strain curve is an illustration of overall mechanical properties of SSD layer. By comparing the stress-strain curves of damaged silicon and ideal silicon, a degradation of Young's modulus, ultimate tensile strength (UTS), and strain at fracture is observed.

Process for forming silicon carbide films and microcomponents

DOEpatents

Hamza, A.V.; Balooch, M.; Moalem, M.

1999-01-19

Silicon carbide films and microcomponents are grown on silicon substrates at surface temperatures between 900 K and 1700 K via C{sub 60} precursors in a hydrogen-free environment. Selective crystalline silicon carbide growth can be achieved on patterned silicon-silicon oxide samples. Patterned SiC films are produced by making use of the high reaction probability of C{sub 60} with silicon at surface temperatures greater than 900 K and the negligible reaction probability for C{sub 60} on silicon dioxide at surface temperatures less than 1250 K. 5 figs.

Process for forming silicon carbide films and microcomponents

DOEpatents

Hamza, Alex V.; Balooch, Mehdi; Moalem, Mehran

1999-01-01

Silicon carbide films and microcomponents are grown on silicon substrates at surface temperatures between 900 K and 1700 K via C.sub.60 precursors in a hydrogen-free environment. Selective crystalline silicon carbide growth can be achieved on patterned silicon-silicon oxide samples. Patterned SiC films are produced by making use of the high reaction probability of C.sub.60 with silicon at surface temperatures greater than 900 K and the negligible reaction probability for C.sub.60 on silicon dioxide at surface temperatures less than 1250 K.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Jia, X. L.; Meng, Q. X.; Yuan, C. X.

The visible light broadband perfect absorbers based on the silver (Ag) nano elliptical disks and holes array are studied using finite difference time domain simulations. The semiconducting indium silicon dioxide thin film is introduced as the space layer in this sandwiched structure. Utilizing the asymmetrical geometry of the structures, polarization sensitivity for transverse electric wave (TE)/transverse magnetic wave (TM) and left circular polarization wave (LCP)/right circular polarization wave (RCP) of the broadband absorption are gained. The absorbers with Ag nano disks and holes array show several peaks absorbance of 100% by numerical simulation. These simple and flexible perfect absorbers aremore » particularly desirable for various potential applications including the solar energy absorber.« less

Excess oxygen limited diffusion and precipitation of iron in amorphous silicon dioxide

NASA Astrophysics Data System (ADS)

Leveneur, J.; Langlois, M.; Kennedy, J.; Metson, James B.

2017-10-01

In micro- and nano- electronic device fabrication, and particularly 3D designs, the diffusion of a metal into sublayers during annealing needs to be minimized as it is usually detrimental to device performance. Diffusion also causes the formation and growth of nanoprecipitates in solid matrices. In this paper, the diffusion behavior of low energy, low fluence, ion implanted iron into a thermally grown silicon oxide layer on silicon is investigated. Different ion beam analysis and imaging techniques were used. Magnetization measurements were also undertaken to provide evidence of nanocrystalline ordering. While standard vacuum furnace annealing and electron beam annealing lead to fast diffusion of the implanted species towards the Si/SiO2 interface, we show that furnace annealing in an oxygen rich atmosphere prevents the diffusion of iron that, in turn, limits the growth of the nanoparticles. The diffusion and particle growth is also greatly reduced when oxygen atoms are implanted in the SiO2 prior to Fe implantation, effectively acting as a diffusion barrier. The excess oxygen is hypothesized to trap Fe atoms and reduce their mean free path during the diffusion. Monte-Carlo simulations of the diffusion process which consider the random walk of Fe, Fick's diffusion of O atoms, Fe precipitation, and desorption of the SiO2 layer under the electron beam annealing were performed. Simulation results for the three preparation conditions are found in good agreement with the experimental data.

Back contact to film silicon on metal for photovoltaic cells

DOEpatents

Branz, Howard M.; Teplin, Charles; Stradins, Pauls

2013-06-18

A crystal oriented metal back contact for solar cells is disclosed herein. In one embodiment, a photovoltaic device and methods for making the photovoltaic device are disclosed. The photovoltaic device includes a metal substrate with a crystalline orientation and a heteroepitaxial crystal silicon layer having the same crystal orientation of the metal substrate. A heteroepitaxial buffer layer having the crystal orientation of the metal substrate is positioned between the substrate and the crystal silicon layer to reduce diffusion of metal from the metal foil into the crystal silicon layer and provide chemical compatibility with the heteroepitaxial crystal silicon layer. Additionally, the buffer layer includes one or more electrically conductive pathways to electrically couple the crystal silicon layer and the metal substrate.

Red-luminescence band: A tool for the quality assessment of germanium and silicon nanocrystals

NASA Astrophysics Data System (ADS)

Fraj, I.; Favre, L.; David, T.; Abbarchi, M.; Liu, K.; Claude, J. B.; Ronda, A.; Naffouti, M.; Saidi, F.; Hassen, F.; Maaref, H.; Aqua, J. N.; Berbezier, I.

2017-10-01

We present the photoluminescence (PL) emission of Silicon and Germanium nanocrystals (NCs) of different sizes embedded in two different matrices. Formation of the NCs is achieved via solid-state dewetting during annealing in a molecular beam epitaxy ultra-high vacuum system of ultrathin amorphous Si and Ge layers deposited at room temperature on SiO2. During the dewetting process, the bi-dimensional amorphous layers transform into small pseudo-spherical islands whose mean size can be tuned directly with the deposited thickness. The nanocrystals are capped either ex situ by silicon dioxide or in situ by amorphous Silicon. The surface-state dependent emission (typically in the range 1.74 eV-1.79 eV) exhibited higher relative PL quantum yields compared to the emission originating from the band gap transition. This red-PL emission comes from the radiative transitions between a Si band and an interface level. It is mainly ascribed to the NCs and environment features deduced from morphological and structural analyses. Power dependent analysis of the photoluminescence intensity under continuous excitation reveals a conventional power law with an exponent close to 1, in agreement with the type II nature of the emission. We show that Ge-NCs exhibit much lower quantum efficiency than Si-NCs due to non-radiative interface states. Low quantum efficiency is also obtained when NCs have been exposed to air before capping, even if the exposure time is very short. Our results indicate that a reduction of the non-radiative surface states is a key strategy step in producing small NCs with increased PL emission for a variety of applications. The red-PL band is then an effective tool for the quality assessment of NCs based structures.

Thin Carbon Layers on Nanostructured Silicon-Properties and Applications

NASA Astrophysics Data System (ADS)

Angelescu, Anca; Kleps, Irina; Miu, Mihaela; Simion, Monica; Bragaru, Adina; Petrescu, Stefana; Paduraru, Crina; Raducanu, Aurelia

Thin carbon layers such as silicon carbide (SiC) and diamond like carbon (DLC) layers on silicon, or on nanostructured silicon substrats were obtained by different methods. This paper is a review of our results in the areas of carbon layer microfabrication technologies and their properties related to different microsystem apllications. So, silicon membranes using a-SiC or DLC layers as etching mask, as well as silicon carbide membranes using a combined porous silicon — DLC structure were fabricated for sensor applications. A detailed evaluation of the field emission (FE) properties of these films was done to demonstrate their capability to be used in field emission devices. Carbon thin layers on nanostructured silicon samples were also investigated with respect to the living cell adhesion on these structures. The experiments indicate that the cell attachment on the surface of carbon coatings can be controlled by deposition parameters during the technological process.

The Oxidation of CVD Silicon Carbide in Carbon Dioxide

NASA Technical Reports Server (NTRS)

Opila, Elizabeth J.; Nguyen, QuynchGiao N.

1997-01-01

Chemically-vapor-deposited silicon carbide (CVD SiC) was oxidized in carbon dioxide (CO2) at temperatures of 1200-1400 C for times between 100 and 500 hours at several gas flow rates. Oxidation weight gains were monitored by thermogravimetric analysis (TGA) and were found to be very small and independent of temperature. Possible rate limiting kinetic laws are discussed. Oxidation of SiC by CO2 is negligible compared to the rates measured for other oxidants typically found in combustion environments: oxygen and water vapor.

Electronic unit integrated into a flexible polymer body

DOEpatents

Krulevitch, Peter A [Pleasanton, CA; Maghribi, Mariam N [Livermore, CA; Benett, William J [Livermore, CA; Hamilton, Julie K [Tracy, CA; Rose, Klint A [Mt. View, CA; Davidson, James Courtney [Livermore, CA; Strauch, Mark S [Livermore, CA

2008-03-11

A peel and stick electronic system comprises a silicone body, and at least one electronic unit operatively connected to the silicone body. The electronic system is produce by providing a silicone layer on a substrate, providing a metal layer on the silicone layer, and providing at least one electronic unit connected to the metal layer.

Electronic unit integrated into a flexible polymer body

DOEpatents

Krulevitch, Peter A [Pleasanton, CA; Maghribi, Mariam N [Livermore, CA; Benett, William J [Livermore, CA; Hamilton, Julie K [Tracy, CA; Rose, Klint A [Mt. View, CA; Davidson, James Courtney [Livermore, CA; Strauch, Mark S [Livermore, CA

2006-04-18

A peel and stick electronic system comprises a silicone body, and at least one electronic unit operatively connected to the silicone body. The electronic system is produce by providing a silicone layer on a substrate, providing a metal layer on the silicone layer, and providing at least one electronic unit connected to the metal layer.

Electronic unit integrated into a flexible polymer body

DOEpatents

Krulevitch, Peter A.; Maghribi, Mariam N.; Benett, William J.; Hamilton, Julie K.; Rose, Klint A.; Davidson, James Courtney; Strauch, Mark S.

2005-04-12

A peel and stick electronic system comprises a silicone body, and at least one electronic unit operatively connected to the silicone body. The electronic system is produce by providing a silicone layer on a substrate, providing a metal layer on the silicone layer, and providing at least one electronic unit connected to the metal layer.

Electronic Unit Integrated Into A Flexible Polymer Body

DOEpatents

Krulevitch, Peter A.; Maghribi, Mariam N.; Benett, William J.; Hamilton, Julie K.; Rose, Klint A.; Davidson, James Courtney; Strauch, Mark S.

2006-01-31

A peel and stick electronic system comprises a silicone body, and at least one electronic unit operatively connected to the silicone body. The electronic system is produce by providing a silicone layer on a substrate, providing a metal layer on the silicone layer, and providing at least one electronic unit connected to the metal layer.

Ta2O5/ Al2O3/ SiO2 - antireflective coating for non-planar optical surfaces by atomic layer deposition

NASA Astrophysics Data System (ADS)

Pfeiffer, K.; Schulz, U.; Tünnermann, A.; Szeghalmi, A.

2017-02-01

Antireflective coatings are essential to improve transmittance of optical elements. Most research and development of AR coatings has been reported on a wide variety of plane optical surfaces; however, antireflection is also necessary on nonplanar optical surfaces. Physical vapor deposition (PVD), a common method for optical coatings, often results in thickness gradients on strongly curved surfaces, leading to a failure of the desired optical function. In this work, optical thin films of tantalum pentoxide, aluminum oxide and silicon dioxide were prepared by atomic layer deposition (ALD), which is based on self-limiting surface reactions. The results demonstrate that ALD optical layers can be deposited on both vertical and horizontal substrate surfaces with uniform thicknesses and the same optical properties. A Ta2O5/Al2O3/ SiO2 multilayer AR coating (400-700 nm) was successfully applied to a curved aspheric glass lens with a diameter of 50 mm and a center thickness of 25 mm.

Optical Coating for Improvement in Thermal Radiative Properties of Cu (In, Ga) Se2 Thin Film Solar Cells for Space Applications

NASA Astrophysics Data System (ADS)

Shimazaki, Kazunori; Kawakita, Shirou; Imaizumi, Mitsuru; Kuwajima, Saburou; Sakurai, Keiichiro; Matsubara, Koji; Niki, Sigeru

2005-05-01

Optical coating on Cu(In, Ga)Se2 thin film solar cells, which have high radiation tolerance, is investigated in order to improve their radiative properties for thermal balance in space. Due to low thermal emissivity, the temperature of the CIGS solar cell is expected to exceed the allowable limit if no coating is applied. Evaporated single-layer coating of silicon dioxide and additional over-layer coatings on the CIGS solar cells increase the emissivity from 0.18 to 0.75. The coating with the over-layer coatings realizes higher emissivity with less thickness than that of the single SiO2 coating. In addition, optical coatings reflecting UV rays and infrared radiation are designed and evaporated on the cells to control solar input. The developed optical coatings could give the CIGS solar cells appropriate thermal radiative properties for space applications without any degradations of the cell performance.

Metal-insulator transition properties of sputtered silicon-doped and un-doped vanadium dioxide films at terahertz range

NASA Astrophysics Data System (ADS)

Zhang, Huafu; Wu, Zhiming; Niu, Ruihua; Wu, Xuefei; he, Qiong; Jiang, Yadong

2015-03-01

Silicon-doped and un-doped vanadium dioxide (VO2) films were synthesized on high-purity single-crystal silicon substrates by means of reactive direct current magnetron sputtering followed by thermal annealing. The structure, morphology and metal-insulator transition properties of silicon-doped VO2 films at terahertz range were measured and compared to those of un-doped VO2 films. X-ray diffraction and scanning electron microscopy indicated that doping the films with silicon significantly affects the preferred crystallographic orientation and surface morphologies (grain size, pores and characteristics of grain boundaries). The temperature dependence of terahertz transmission shows that the transition temperature, hysteresis width and transition sharpness greatly depend on the silicon contents while the transition amplitude was relatively insensitive to the silicon contents. Interestingly, the VO2 film doped with a silicon content of 4.6 at.% shows excellent terahertz switching characteristics, namely a small hysteresis width of 4.5 °C, a giant transmission modulation ratio of about 82% and a relatively low transition temperature of 56.1 °C upon heating. This work experimentally indicates that silicon doping can effectively control not only the surface morphology but also the metal-insulator transition characteristics of VO2 films at terahertz range.

Methods To Determine the Silicone Oil Layer Thickness in Sprayed-On Siliconized Syringes.

PubMed

Loosli, Viviane; Germershaus, Oliver; Steinberg, Henrik; Dreher, Sascha; Grauschopf, Ulla; Funke, Stefanie

2018-01-01

The silicone lubricant layer in prefilled syringes has been investigated with regards to siliconization process performance, prefilled syringe functionality, and drug product attributes, such as subvisible particle levels, in several studies in the past. However, adequate methods to characterize the silicone oil layer thickness and distribution are limited, and systematic evaluation is missing. In this study, white light interferometry was evaluated to close this gap in method understanding. White light interferometry demonstrated a good accuracy of 93-99% for MgF 2 coated, curved standards covering a thickness range of 115-473 nm. Thickness measurements for sprayed-on siliconized prefilled syringes with different representative silicone oil distribution patterns (homogeneous, pronounced siliconization at flange or needle side, respectively) showed high instrument (0.5%) and analyst precision (4.1%). Different white light interferometry instrument parameters (autofocus, protective shield, syringe barrel dimensions input, type of non-siliconized syringe used as base reference) had no significant impact on the measured average layer thickness. The obtained values from white light interferometry applying a fully developed method (12 radial lines, 50 mm measurement distance, 50 measurements points) were in agreement with orthogonal results from combined white and laser interferometry and 3D-laser scanning microscopy. The investigated syringe batches (lot A and B) exhibited comparable longitudinal silicone oil layer thicknesses ranging from 170-190 nm to 90-100 nm from flange to tip and homogeneously distributed silicone layers over the syringe barrel circumference (110- 135 nm). Empty break-loose (4-4.5 N) and gliding forces (2-2.5 N) were comparably low for both analyzed syringe lots. A silicone oil layer thickness of 100-200 nm was thus sufficient for adequate functionality in this particular study. Filling the syringe with a surrogate solution including short-term exposure and emptying did not significantly influence the silicone oil layer at the investigated silicone level. It thus appears reasonable to use this approach to characterize silicone oil layers in filled syringes over time. The developed method characterizes non-destructively the layer thickness and distribution of silicone oil in empty syringes and provides fast access to reliable results. The gained information can be further used to support optimization of siliconization processes and increase the understanding of syringe functionality. LAY ABSTRACT: Silicone oil layers as lubricant are required to ensure functionality of prefilled syringes. Methods evaluating these layers are limited, and systematic evaluation is missing. The aim of this study was to develop and assess white light interferometry as an analytical method to characterize sprayed-on silicone oil layers in 1 mL prefilled syringes. White light interferometry showed a good accuracy (93-99%) as well as instrument and analyst precision (0.5% and 4.1%, respectively). Different applied instrument parameters had no significant impact on the measured layer thickness. The obtained values from white light interferometry applying a fully developed method concurred with orthogonal results from 3D-laser scanning microscopy and combined white light and laser interferometry. The average layer thicknesses in two investigated syringe lots gradually decreased from 170-190 nm at the flange to 100-90 nm at the needle side. The silicone layers were homogeneously distributed over the syringe barrel circumference (110-135 nm) for both lots. Empty break-loose (4-4.5 N) and gliding forces (2-2.5 N) were comparably low for both analyzed syringe lots. Syringe filling with a surrogate solution, including short-term exposure and emptying, did not significantly affect the silicone oil layer. The developed, non-destructive method provided reliable results to characterize the silicone oil layer thickness and distribution in empty siliconized syringes. This information can be further used to support optimization of siliconization processes and increase understanding of syringe functionality. © PDA, Inc. 2018.

Force measurements of a magnetic micro actuator proposed for a microvalve array

NASA Astrophysics Data System (ADS)

Chang, Pauline J.; Chang, Frank W.; Yuen, Michelle C.; Otillar, Robert; Horsley, David A.

2014-03-01

Low-cost, easily-fabricated and power-efficient microvalves are necessary for many microfluidic lab-on-a-chip applications. In this study, we present a simple, low-power, scalable, CMOS-compatible magnetic actuator for microvalve applications composed of a paramagnetic bead as the ball valve over a picoliter reaction well etched into a silicon substrate. The paramagnetic bead, composed of either pure FeSi or magnetite in a SiO2 matrix, is actuated by the local magnetic field gradient generated by a microcoil in an aqueous environment, and the reaction well is situated at the microcoil center. A permanent magnet beneath the microvalve device provides an external magnetic biasing field that magnetizes the bead, enabling bidirectional actuation and reducing the current required to actuate the bead to a level below 10 mA. The vertical and radial magnetic forces exerted on the bead by the microcoil were measured for both pure FeSi and composite beads and agree well with the predictions of 2D axisymmetric finite element method models. Vertical forces were within a range of 13-80 nN, and radial forces were 11-60 nN depending on the bead type. The threshold current required to initiate bead actuation was measured as a function of bead diameter and is found to scale inversely with volume for small beads, as expected based on the magnetic force model. To provide an estimate of the stiction force acting between the bead and the passivation layer on the substrate, repeated actuation trials were used to study the bead throw distance for substrates coated with silicon dioxide, Parylene-C, and photoresist. The stiction observed was lowest for a photoresist-coated substrate, while silicon dioxide and Parylene-C coated substrates exhibited similar levels of stiction.

Synthesis and Characterization of 2-D Materials

NASA Astrophysics Data System (ADS)

Pazos, S.; Sahoo, P.; Afaneh, T.; Rodriguez Gutierrez, H.

Atomically thin transition-metal dichacogenides (TMD), graphene, and boron nitride (BN) are two-dimensional materials where the charge carriers (electrons and holes) are confined to move in a plane. They exhibit distinctive optoelectronic properties compared to their bulk layered counterparts. When combined into heterostructures, these materials open more possibilities in terms of new properties and device functionality. In this work, WSe2 and graphene were grown using Chemical Vapor Deposition (CVD) and Physical Vapor Deposition (PVD) techniques. The quality and morphology of each material was checked using Raman, Photoluminescence Spectroscopy, and Scanning Electron Microscopy. Graphene had been successfully grown homogenously, characterized, and transferred from copper to silicon dioxide substrates; these films will be used in future studies to build 2-D devices. Different morphologies of WSe2 2-D islands were successfully grown on SiO2 substrates. Depending on the synthesis conditions, the material on each sample had single layer, double layer, and multi-layer areas. A variety of 2-D morphologies were also observed in the 2-D islands. This project is supported by the NSF REU Grant #1560090 and NSF Grant #DMR-1557434.

Modification of surfaces of silver nanoparticles for controlled deposition of silicon, manganese, and titanium dioxides

NASA Astrophysics Data System (ADS)

Apostolova, Tzveta; Obreshkov, B. D.; Ionin, A. A.; Kudryashov, S. I.; Makarov, S. V.; Mel'nik, N. N.; Rudenko, A. A.

2018-01-01

In this work we show that nanometric-thick layers of SiO2, MnO2, and TiO2 may be effectively deposited on various silver nanoparticles (including cubic Ag nanoparticles) covered by a very thin (below 0.4 nm) layer of silver sulphide. The background in Raman measurements generated by sulphide-protected Ag nanoparticles is significantly smaller than that for analogous Ag nanoparticles protected by a monolayer formed from alkanethiols - depositing alkanethiols on a surface of anisotropic silver nanoparticles is the current standard method used for protecting a surface of Ag nanoparticles before depositing a layer of silica. Because of significantly smaller generated Raman background, Ag@SiO2 nanostructures with an Ag2S linkage layer between the silver core and the silica shell are very promising low-background electromagnetic nanoresonators for carrying out Raman analysis of various surfaces - especially using what is known as shell-isolated nanoparticle-enhanced Raman spectroscopy (SHINERS). Sample SHINERS analyses of various surfaces (including pesticide-contaminated surfaces of tomatoes) using cubic-Ag@SiO2 nanoparticles as electromagnetic nanoresonators are also presented.

Method for sputtering a PIN microcrystalline/amorphous silicon semiconductor device with the P and N-layers sputtered from boron and phosphorous heavily doped targets

DOEpatents

Moustakas, Theodore D.; Maruska, H. Paul

1985-04-02

A silicon PIN microcrystalline/amorphous silicon semiconductor device is constructed by the sputtering of N, and P layers of silicon from silicon doped targets and the I layer from an undoped target, and at least one semi-transparent ohmic electrode.

A fermentation-powered thermopneumatic pump for biomedical applications.

PubMed

Ochoa, Manuel; Ziaie, Babak

2012-10-21

We present a microorganism-powered thermopneumatic pump that utilizes temperature-dependent slow-kinetics gas (carbon dioxide) generating fermentation of yeast as a pressure source. The pump consists of stacked layers of polydimethylsiloxane (PDMS) and a silicon substrate that form a drug reservoir, and a yeast-solution-filled working chamber. The pump operates by the displacement of a drug due to the generation of gas produced via yeast fermentation carried out at skin temperatures. The robustness of yeast allows for long shelf life under extreme environmental conditions (50 °C, >250 MPa, 5-8% humidity). The generation of carbon dioxide is a linear function of time for a given temperature, thus allowing for a controlled volume displacement. A polymeric prototype (dimensions 15 mm × 15 mm × 10 mm) with a slow flow rate of <0.23 μL min(-1) and maximum backpressure of 5.86 kPa capable of continuously pumping for over two hours is presented and characterized.

Effect of ultraviolet illumination and ambient gases on the photoluminescence and electrical properties of nanoporous silicon layer for organic vapor sensor.

PubMed

Atiwongsangthong, Narin

2012-08-01

The purpose of this research, the nanoporous silicon layer were fabricated and investigated the physical properties such as photoluminescence and the electrical properties in order to develop organic vapor sensor by using nanoporous silicon. The Changes in the photoluminescence intensity of nanoporous silicon samples are studied during ultraviolet illumination in various ambient gases such as nitrogen, oxigen and vacuum. In this paper, the nanoporous silicon layer was used as organic vapor adsorption and sensing element. The advantage of this device are simple process compatible in silicon technology and usable in room temperature. The structure of this device consists of nanoporous silicon layer which is formed by anodization of silicon wafer in hydrofluoric acid solution and aluminum electrode which deposited on the top of nanoporous silicon layer by evaporator. The nanoporous silicon sensors were placed in a gas chamber with various organic vapor such as ethanol, methanol and isopropyl alcohol. From studying on electrical characteristics of this device, it is found that the nanoporous silicon layer can detect the different organic vapor. Therefore, the nanoporous silicon is important material for organic vapor sensor and it can develop to other applications about gas sensors in the future.

Fabrication of a Cryogenic Bias Filter for Ultrasensitive Focal Plane

NASA Technical Reports Server (NTRS)

Chervenak, James; Wollack, Edward

2012-01-01

A fabrication process has been developed for cryogenic in-line filtering for the bias and readout of ultrasensitive cryogenic bolometers for millimeter and submillimeter wavelengths. The design is a microstripline filter that cuts out, or strongly attenuates, frequencies (10 50 GHz) that can be carried by wiring staged at cryogenic temperatures. The filter must have 100-percent transmission at DC and low frequencies where the bias and readout lines will carry signal. The fabrication requires the encapsulation of superconducting wiring in a dielectric-metal envelope with precise electrical characteristics. Sufficiently thick insulation layers with high-conductivity metal layers fully surrounding a patterned superconducting wire in arrayable formats have been demonstrated. A degenerately doped silicon wafer has been chosen to provide a metallic ground plane. A metallic seed layer is patterned to enable attachment to the ground plane. Thick silicon dioxide films are deposited at low temperatures to provide tunable dielectric isolation without degrading the metallic seed layer. Superconducting wiring is deposited and patterned using microstripline filtering techniques to cut out the relevant frequencies. A low Tc superconductor is used so that it will attenuate power strongly above the gap frequency. Thick dielectric is deposited on top of the circuit, and then vias are patterned through both dielectric layers. A thick conductive film is deposited conformally over the entire circuit, except for the contact pads for the signal and bias attachments to complete the encapsulating ground plane. Filters are high-aspect- ratio rectangles, allowing close packing in one direction, while enabling the chip to feed through the wall of a copper enclosure. The chip is secured in the copper wall using a soft metal seal to make good thermal and electrical contact to the outer shield.

Method of producing buried porous silicon-geramanium layers in monocrystalline silicon lattices

NASA Technical Reports Server (NTRS)

Fathauer, Robert W. (Inventor); George, Thomas (Inventor); Jones, Eric W. (Inventor)

1997-01-01

Lattices of alternating layers of monocrystalline silicon and porous silicon-germanium have been produced. These single crystal lattices have been fabricated by epitaxial growth of Si and Si--Ge layers followed by patterning into mesa structures. The mesa structures are stain etched resulting in porosification of the Si--Ge layers with a minor amount of porosification of the monocrystalline Si layers. Thicker Si--Ge layers produced in a similar manner emitted visible light at room temperature.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Menges, F.; Spieser, M.; Riel, H.

The thermal radiative near field transport between vanadium dioxide and silicon oxide at submicron distances is expected to exhibit a strong dependence on the state of vanadium dioxide which undergoes a metal-insulator transition near room temperature. We report the measurement of near field thermal transport between a heated silicon oxide micro-sphere and a vanadium dioxide thin film on a titanium oxide (rutile) substrate. The temperatures of the 15 nm vanadium dioxide thin film varied to be below and above the metal-insulator-transition, and the sphere temperatures were varied in a range between 100 and 200 °C. The measurements were performed using a vacuum-basedmore » scanning thermal microscope with a cantilevered resistive thermal sensor. We observe a thermal conductivity per unit area between the sphere and the film with a distance dependence following a power law trend and a conductance contrast larger than 2 for the two different phase states of the film.« less

Equation of state for shock compression of distended solids

NASA Astrophysics Data System (ADS)

Grady, Dennis; Fenton, Gregg; Vogler, Tracy

2014-05-01

Shock Hugoniot data for full-density and porous compounds of boron carbide, silicon dioxide, tantalum pentoxide, uranium dioxide and playa alluvium are investigated for the purpose of equation-of-state representation of intense shock compression. Complications of multivalued Hugoniot behavior characteristic of highly distended solids are addressed through the application of enthalpy-based equations of state of the form originally proposed by Rice and Walsh in the late 1950's. Additive measures of cold and thermal pressure intrinsic to the Mie-Gruneisen EOS framework is replaced by isobaric additive functions of the cold and thermal specific volume components in the enthalpy-based formulation. Additionally, experimental evidence reveals enhancement of shock-induced phase transformation on the Hugoniot with increasing levels of initial distension for silicon dioxide, uranium dioxide and possibly boron carbide. Methods for addressing this experimentally observed feature of the shock compression are incorporated into the EOS model.

Equation of State for Shock Compression of High Distension Solids

NASA Astrophysics Data System (ADS)

Grady, Dennis

2013-06-01

Shock Hugoniot data for full-density and porous compounds of boron carbide, silicon dioxide, tantalum pentoxide, uranium dioxide and playa alluvium are investigated for the purpose of equation-of-state representation of intense shock compression. Complications of multivalued Hugoniot behavior characteristic of highly distended solids are addressed through the application of enthalpy-based equations of state of the form originally proposed by Rice and Walsh in the late 1950's. Additivity of cold and thermal pressure intrinsic to the Mie-Gruneisen EOS framework is replaced by isobaric additive functions of the cold and thermal specific volume components in the enthalpy-based formulation. Additionally, experimental evidence supports acceleration of shock-induced phase transformation on the Hugoniot with increasing levels of initial distention for silicon dioxide, uranium dioxide and possibly boron carbide. Methods for addressing this experimentally observed facet of the shock compression are introduced into the EOS model.

Increased voltage photovoltaic cell

NASA Technical Reports Server (NTRS)

Ross, B.; Bickler, D. B.; Gallagher, B. D. (Inventor)

1985-01-01

A photovoltaic cell, such as a solar cell, is provided which has a higher output voltage than prior cells. The improved cell includes a substrate of doped silicon, a first layer of silicon disposed on the substrate and having opposite doping, and a second layer of silicon carbide disposed on the first layer. The silicon carbide preferably has the same type of doping as the first layer.

Chemical vapor deposition of silicon, silicon dioxide, titanium and ferroelectric thin films

NASA Astrophysics Data System (ADS)

Chen, Feng

Various silicon-based thin films (such as epitaxial, polycrystalline and amorphous silicon thin films, silicon dioxide thin films and silicon nitride thin films), titanium thin film and various ferroelectric thin films (such as BaTiO3 and PbTiO3 thin films) play critical roles in the manufacture of microelectronics circuits. For the past few years, there have been tremendous interests to search for cheap, safe and easy-to-use methods to develop those thin films with high quality and good step coverage. Silane is a critical chemical reagent widely used to deposit silicon-based thin films. Despite its wide use, silane is a dangerous material. It is pyrophoric, extremely flammable and may explode from heat, shock and/or friction. Because of the nature of silane, serious safety issues have been raised concerning the use, transportation, and storage of compressed gas cylinders of silane. Therefore it is desired to develop safer ways to deposit silicon-based films. In chapter III, I present the results of our research in the following fields: (1) Silane generator, (2) Substitutes of silane for deposition of silicon and silicon dioxide thin films, (3) Substitutes of silane for silicon dioxide thin film deposition. In chapter IV, hydropyridine is introduced as a new ligand for use in constructing precursors for chemical vapor deposition. Detachement of hydropyridine occurs by a low-temperature reaction leaving hydrogen in place of the hydropyridine ligands. Hydropyridine ligands can be attached to a variety of elements, including main group metals, such as aluminum and antimony, transition metals, such as titanium and tantalum, semiconductors such as silicon, and non-metals such as phosphorus and arsenic. In this study, hydropyridine-containing titanium compounds were synthesized and used as chemical vapor deposition precursors for deposition of titanium containing thin films. Some other titanium compounds were also studied for comparison. In chapter V, Chemical Vapor Depositions (CVD) of many oxide thin films including ferroelectric and high dielectric constant BaTiO3, SrTiO 3 and PbTiO3 films had been carried out under reduced pressure (30 torr--80 torr) using liquid precursors containing beta-diketone ligands. The relative reactivities of Ba(beta-diketonate)2, Sr(beta-diketonate) 2, Pb(beta-diketonate)2, Ti(beta-diketonate)3, TiO(beta-diketonate)2 and Ti(OiPr)2(beta-diketonate) 2 had been studied individually prior to the deposition of BaTiO 3, SrTiO3 and PbTiO3 thin films from the mixtures of corresponding precursors. By using multi-step deposition method, carbon free stoichiometric BaTiO3 thin films uniform in large area have been achieved.

Fabrication and Characterization of CMOS-MEMS Magnetic Microsensors

PubMed Central

Hsieh, Chen-Hsuan; Dai, Ching-Liang; Yang, Ming-Zhi

2013-01-01

This study investigates the design and fabrication of magnetic microsensors using the commercial 0.35 μm complementary metal oxide semiconductor (CMOS) process. The magnetic sensor is composed of springs and interdigitated electrodes, and it is actuated by the Lorentz force. The finite element method (FEM) software CoventorWare is adopted to simulate the displacement and capacitance of the magnetic sensor. A post-CMOS process is utilized to release the suspended structure. The post-process uses an anisotropic dry etching to etch the silicon dioxide layer and an isotropic dry etching to remove the silicon substrate. When a magnetic field is applied to the magnetic sensor, it generates a change in capacitance. A sensing circuit is employed to convert the capacitance variation of the sensor into the output voltage. The experimental results show that the output voltage of the magnetic microsensor varies from 0.05 to 1.94 V in the magnetic field range of 5–200 mT. PMID:24172287

Photolithography and Fluorescence Correlation Spectroscopy used to examine the rates of exchange in reverse micelle systems

NASA Astrophysics Data System (ADS)

Norris, Zach; Mawson, Cara; Johnson, Kyron; Kessler, Sarah; Rebecca, Anne; Wolf, Nathan; Lim, Michael; Nucci, Nathaniel

Reverse micelles are molecular complexes that encapsulate a nanoscale pool of water in a surfactant shell dissolved in non-polar solvent. These complexes have a wide range of applications, and in all cases, the degree to which reverse micelles (RM) exchange their contents is relevant for their use. Despite its importance, this aspect of RM behavior is poorly understood. Photolithography is employed here to create micro and nano scale fluidic systems in which mixing rates can be precisely measured using fluorescence correlation spectroscopy (FCS). Micro-channel patterns are etched using reactive ion etching process into a layer of silicon dioxide on crystalline silicon substrates. Solutions containing mixtures of reverse micelles, proteins, and fluorophores are placed into reservoirs in the patterns, while diffusion and exchange between RMs is monitored using a FCS system built from a modified confocal Raman spectrometer. Using this approach, the diffusion and exchange rates for RM systems are measured as a function of the components of the RM mixture. Funding provided by Rowan University.

Voltage-Controlled Spray Deposition of Multiwalled Carbon Nanotubes on Semiconducting and Insulating Substrates

NASA Astrophysics Data System (ADS)

Maulik, Subhodip; Sarkar, Anirban; Basu, Srismrita; Daniels-Race, Theda

2018-05-01

A facile, cost-effective, voltage-controlled, "single-step" method for spray deposition of surfactant-assisted dispersed carbon nanotube (CNT) thin films on semiconducting and insulating substrates has been developed. The fabrication strategy enables direct deposition and adhesion of CNT films on target samples, eliminating the need for substrate surface functionalization with organosilane binder agents or metal layer coatings. Spray coating experiments on four types of sample [bare silicon (Si), microscopy-grade glass samples, silicon dioxide (SiO2), and polymethyl methacrylate (PMMA)] under optimized control parameters produced films with thickness ranging from 40 nm to 6 μm with substantial surface coverage and packing density. These unique deposition results on both semiconducting and insulator target samples suggest potential applications of this technique in CNT thin-film transistors with different gate dielectrics, bendable electronics, and novel CNT-based sensing devices, and bodes well for further investigation into thin-film coatings of various inorganic, organic, and hybrid nanomaterials on different types of substrate.

SEMICONDUCTOR TECHNOLOGY Development of spin-on-glass process for triple metal interconnects

NASA Astrophysics Data System (ADS)

Li, Peng; Wenbin, Zhao; Guozhang, Wang; Zongguang, Yu

2010-12-01

Spin-on-glass (SOG), an interlayer dielectric material applied in liquid form to fill narrow gaps in the sub-dielectric surface and thus conducive to planarization, is an alternative to silicon dioxide (SiO2) deposited using PECVD processes. However, its inability to adhere to metal and problems such as cracking prevent the easy application of SOG technology to provide an interlayer dielectric in multilevel metal interconnect circuits, particularly in university processing labs. This paper will show that a thin layer of CVD SiO2 and a curing temperature below the sintering temperature of the metal interconnect layer will promote adhesion, reduce gaps, and prevent cracking. Electron scanning microscope analysis has been used to demonstrate the success of the improved technique. This optimized process has been used in batches of double-poly, triple-metal CMOS wafer fabrication to date.

Ion assisted deposition of SiO2 film from silicon

NASA Astrophysics Data System (ADS)

Pham, Tuan. H.; Dang, Cu. X.

2005-09-01

Silicon dioxide, SiO2, is one of the preferred low index materials for optical thin film technology. It is often deposited by electron beam evaporation source with less porosity and scattering, relatively durable and can have a good laser damage threshold. Beside these advantages the deposition of critical optical thin film stacks with silicon dioxide from an E-gun was severely limited by the stability of the evaporation pattern or angular distribution of the material. The even surface of SiO2 granules in crucible will tend to develop into groove and become deeper with the evaporation process. As the results, angular distribution of the evaporation vapor changes in non-predicted manner. This report presents our experiments to apply Ion Assisted Deposition process to evaporate silicon in a molten liquid form. By choosing appropriate process parameters we can get SiO2 film with good and stable property.

Selective doping of silicon nanowires by means of electron beam stimulated oxide etching.

PubMed

Pennelli, G; Totaro, M; Piotto, M

2012-02-08

Direct patterning of silicon dioxide by means of electron beam stimulated etching is shown, and a full characterization of exposure dose is presented. For its high dose, this technique is unsuitable for large areas but can be usefully employed like a precision scalpel for removing silicon dioxide by well-localized points. In this work, this technique is applied to the definition of windows through the oxide surrounding top down fabricated n-doped silicon nanowires. These windows will be employed for a selective doping of the nanowire by boron diffusion. In this way, pn junctions can be fabricated in well-localized points in the longitudinal direction of the nanowire, and an electrical contact to the different junctions can be provided. Electrical I-V characteristics of a nanowire with pn longitudinal junctions are reported and discussed. © 2012 American Chemical Society

Silicon on silicon dioxide slot waveguide evanescent field gas absorption sensor

NASA Astrophysics Data System (ADS)

Butt, M. A.; Khonina, S. N.; Kazanskiy, N. L.

2018-01-01

Several trace gases such as H2O, CO, CO2, NO, N2O, NO2 and CH4 strongly absorb in the mid-IR spectral region due to their fundamental rotational and vibrational transitions. In this work, we propose an evanescent field absorption gas sensor based on silicon/silicon dioxide slot waveguide at 3.39 μm for sensing of methane gas. These waveguides can provide the highest evanescent field ratio (EFR) > 47% with adequate dimensions. Higher EFR values often come at an expense of higher propagation losses. These waveguides have relatively higher losses as compared to conventional waveguides, such as rib and slab waveguides, as these fundamental losses are static and the proposed sensing mechanism is established on the incremental loss due to the absorption of the gas. Therefore, incident power can always be incremented to compensate the waveguide losses.

Photo-EMF sensitivity of porous silicon thin layer-crystalline silicon heterojunction to ammonia adsorption.

PubMed

Vashpanov, Yuriy; Jung, Jae Il; Kwack, Kae Dal

2011-01-01

A new method of using photo-electromotive force in detecting gas and controlling sensitivity is proposed. Photo-electromotive force on the heterojunction between porous silicon thin layer and crystalline silicon wafer depends on the concentration of ammonia in the measurement chamber. A porous silicon thin layer was formed by electrochemical etching on p-type silicon wafer. A gas and light transparent electrical contact was manufactured to this porous layer. Photo-EMF sensitivity corresponding to ammonia concentration in the range from 10 ppm to 1,000 ppm can be maximized by controlling the intensity of illumination light.

Silicon Nanowire Growth at Chosen Positions and Orientations

NASA Technical Reports Server (NTRS)

Getty, Stephanie A.

2009-01-01

It is now possible to grow silicon nanowires at chosen positions and orientations by a method that involves a combination of standard microfabrication processes. Because their positions and orientations can be chosen with unprecedented precision, the nanowires can be utilized as integral parts of individually electronically addressable devices in dense arrays. Nanowires made from silicon and perhaps other semiconductors hold substantial promise for integration into highly miniaturized sensors, field-effect transistors, optoelectronic devices, and other electronic devices. Like bulk semiconductors, inorganic semiconducting nanowires are characterized by electronic energy bandgaps that render them suitable as means of modulating or controlling electronic signals through electrostatic gating, in response to incident light, or in response to molecules of interest close to their surfaces. There is now potential for fabricating arrays of uniform, individually electronically addressable nanowires tailored to specific applications. The method involves formation of metal catalytic particles at the desired positions on a substrate, followed by heating the substrate in the presence of silane gas. The figure illustrates an example in which a substrate includes a silicon dioxide surface layer that has been etched into an array of pillars and the catalytic (in this case, gold) particles have been placed on the right-facing sides of the pillars. The catalytic thermal decomposition of the silane to silicon and hydrogen causes silicon columns (the desired nanowires) to grow outward from the originally catalyzed spots on the substrate, carrying the catalytic particles at their tips. Thus, the position and orientation of each silicon nanowire is determined by the position of its originally catalyzed spot on the substrate surface, and the orientation of the nanowire is perpendicular to the substrate surface at the originally catalyzed spot.

Molecular layer deposition of APTES on silicon nanowire biosensors: Surface characterization, stability and pH response

NASA Astrophysics Data System (ADS)

Liang, Yuchen; Huang, Jie; Zang, Pengyuan; Kim, Jiyoung; Hu, Walter

2014-12-01

We report the use of molecular layer deposition (MLD) for depositing 3-aminopropyltriethoxysilane (APTES) on a silicon dioxide surface. The APTES monolayer was characterized using spectroscopic ellipsometry, contact angle goniometry, and atomic force microscopy. Effects of reaction time of repeating pulses and simultaneous feeding of water vapor with APTES were tested. The results indicate that the synergistic effects of water vapor and reaction time are significant for the formation of a stable monolayer. Additionally, increasing the number of repeating pulses improved the APTES surface coverage but led to saturation after 10 pulses. In comparing MLD with solution-phase deposition, the APTES surface coverage and the surface quality were nearly equivalent. The hydrolytic stability of the resulting films was also studied. The results confirmed that the hydrolysis process was necessary for MLD to obtain stable surface chemistry. Furthermore, we compared the pH sensing results of Si nanowire field effect transistors (Si NWFETs) modified by both the MLD and solution methods. The highly repeatable pH sensing results reflected the stability of APTES monolayers. The results also showed an improved pH response of the sensor prepared by MLD compared to the one prepared by the solution treatment, which indicated higher surface coverage of APTES.

Stepwise mechanism and H2O-assisted hydrolysis in atomic layer deposition of SiO2 without a catalyst.

PubMed

Fang, Guo-Yong; Xu, Li-Na; Wang, Lai-Guo; Cao, Yan-Qiang; Wu, Di; Li, Ai-Dong

2015-01-01

Atomic layer deposition (ALD) is a powerful deposition technique for constructing uniform, conformal, and ultrathin films in microelectronics, photovoltaics, catalysis, energy storage, and conversion. The possible pathways for silicon dioxide (SiO2) ALD using silicon tetrachloride (SiCl4) and water (H2O) without a catalyst have been investigated by means of density functional theory calculations. The results show that the SiCl4 half-reaction is a rate-determining step of SiO2 ALD. It may proceed through a stepwise pathway, first forming a Si-O bond and then breaking Si-Cl/O-H bonds and forming a H-Cl bond. The H2O half-reaction may undergo hydrolysis and condensation processes, which are similar to conventional SiO2 chemical vapor deposition (CVD). In the H2O half-reaction, there are massive H2O molecules adsorbed on the surface, which can result in H2O-assisted hydrolysis of the Cl-terminated surface and accelerate the H2O half-reaction. These findings may be used to improve methods for the preparation of SiO2 ALD and H2O-based ALD of other oxides, such as Al2O3, TiO2, ZrO2, and HfO2.

Stepwise mechanism and H2O-assisted hydrolysis in atomic layer deposition of SiO2 without a catalyst

NASA Astrophysics Data System (ADS)

Fang, Guo-Yong; Xu, Li-Na; Wang, Lai-Guo; Cao, Yan-Qiang; Wu, Di; Li, Ai-Dong

2015-02-01

Atomic layer deposition (ALD) is a powerful deposition technique for constructing uniform, conformal, and ultrathin films in microelectronics, photovoltaics, catalysis, energy storage, and conversion. The possible pathways for silicon dioxide (SiO2) ALD using silicon tetrachloride (SiCl4) and water (H2O) without a catalyst have been investigated by means of density functional theory calculations. The results show that the SiCl4 half-reaction is a rate-determining step of SiO2 ALD. It may proceed through a stepwise pathway, first forming a Si-O bond and then breaking Si-Cl/O-H bonds and forming a H-Cl bond. The H2O half-reaction may undergo hydrolysis and condensation processes, which are similar to conventional SiO2 chemical vapor deposition (CVD). In the H2O half-reaction, there are massive H2O molecules adsorbed on the surface, which can result in H2O-assisted hydrolysis of the Cl-terminated surface and accelerate the H2O half-reaction. These findings may be used to improve methods for the preparation of SiO2 ALD and H2O-based ALD of other oxides, such as Al2O3, TiO2, ZrO2, and HfO2.

Inherent substrate-dependent growth initiation and selective-area atomic layer deposition of TiO{sub 2} using “water-free” metal-halide/metal alkoxide reactants

DOE Office of Scientific and Technical Information (OSTI.GOV)

Atanasov, Sarah E.; Kalanyan, Berç; Parsons, Gregory N., E-mail: gnp@ncsu.edu

2016-01-15

Titanium dioxide atomic layer deposition (ALD) is shown to proceed selectively on oxidized surfaces with minimal deposition on hydrogen-terminated silicon using titanium tetrachloride (TiCl{sub 4}) and titanium tetra-isopropoxide [Ti(OCH(CH{sub 3}){sub 2}){sub 4}, TTIP] precursors. Ex situ x-ray photoelectron spectroscopy shows a more rapid ALD nucleation rate on both Si–OH and Si–H surfaces when water is the oxygen source. Eliminating water delays the oxidation of the hydrogen-terminated silicon, thereby impeding TiO{sub 2} film growth. For deposition at 170 °C, the authors achieve ∼2 nm of TiO{sub 2} on SiO{sub 2} before substantial growth takes place on Si–H. On both Si–H and Si–OH, themore » surface reactions proceed during the first few TiCl{sub 4}/TTIP ALD exposure steps where the resulting products act to impede subsequent growth, especially on Si–H surfaces. Insight from this work helps expand understanding of “inherent” substrate selective ALD, where native differences in substrate surface reaction chemistry are used to promote desired selective-area growth.« less

Apparatus and method of manufacture for depositing a composite anti-reflection layer on a silicon surface

NASA Technical Reports Server (NTRS)

Pain, Bedabrata (Inventor)

2012-01-01

An apparatus and associated method are provided. A first silicon layer having at least one of an associated passivation layer and barrier is included. Also included is a composite anti-reflection layer including a stack of layers each with a different thickness and refractive index. Such composite anti-reflection layer is disposed adjacent to the first silicon layer.

Development and characterization of high refractive index and high scattering acrylate polymer layers

NASA Astrophysics Data System (ADS)

Eiselt, Thomas; Gomard, Guillaume; Preinfalk, Jan; Gleißner, Uwe; Lemmer, Uli; Hanemann, Thomas

2016-11-01

In this work, we develop a wet-processable scattering layer exhibiting a high refractive index that can be used in organic light-emitting diodes for light outcoupling purposes. The composite layers contain an acrylate casting resin, benzylmethacrylate, and phenanthrene, which is employed to increase the refractive index. The mixtures are first rheologically characterized and then polymerized with heat and UV radiation. For the refractive index measurements, the polymerized samples require a planar surface without air bubbles. To produce flat samples, a special construction consisting of a glass plate, a teflon sheet, a silicone ring (PDMS mold), another teflon sheet, and another glass plate is developed. Glue clamps are used to hold the construction together. The refractive index of the samples can be increased from 1.565 to 1.585 at 20°C at a wavelength of 589 nm following the addition of 20 wt% phenanthrene. A master mixture with a high refractive index is taken for further experiments. Nanoscaled titanium dioxide is added and dispersed into the master mixture and then spin coated on a glass substrate. These layers are optically characterized. Most of the presented layers present the expected haze of over 50%.

Method for implementation of back-illuminated CMOS or CCD imagers

NASA Technical Reports Server (NTRS)

Pain, Bedabrata (Inventor)

2008-01-01

A method for implementation of back-illuminated CMOS or CCD imagers. An oxide layer buried between silicon wafer and device silicon is provided. The oxide layer forms a passivation layer in the imaging structure. A device layer and interlayer dielectric are formed, and the silicon wafer is removed to expose the oxide layer.

Elasticity of α-Cristobalite: A Silicon Dioxide with a Negative Poisson's Ratio

NASA Astrophysics Data System (ADS)

Yeganeh-Haeri, Amir; Weidner, Donald J.; Parise, John B.

1992-07-01

Laser Brillouin spectroscopy was used to determine the adiabatic single-crystal elastic stiffness coefficients of silicon dioxide (SiO_2) in the α-cristobalite structure. This SiO_2 polymorph, unlike other silicas and silicates, exhibits a negative Poisson's ratio; α-cristobalite contracts laterally when compressed and expands laterally when stretched. Tensorial analysis of the elastic coefficients shows that Poisson's ratio reaches a maximum value of -0.5 in some directions, whereas averaged values for the single-phased aggregate yield a Poisson's ratio of -0.16.

Oxidation of Chemically-Vapor-Deposited Silicon Carbide in Carbon Dioxide

NASA Technical Reports Server (NTRS)

Opila, Elizabeth J.; Nguyen, QuynhGiao N.

1998-01-01

Chemically-vapor-deposited silicon carbide (CVD SiC) was oxidized in carbon dioxide (CO2) at temperatures of 1200-1400 C for times between 96 and 500 h at several gas flow rates. Oxidation weight gains were monitored by thermogravimetric analysis (TGA) and were found to be very small and independent of temperature. Possible rate limiting kinetic mechanisms are discussed. Passive oxidation of SiC by CO2 is negligible compared to the rates measured for other oxidants that are also found in combustion environments, oxygen and water vapor.

Phase Equilibria of Stored Chemical Energy Reactants.

DTIC Science & Technology

1984-07-25

aluminate-lithium ferrate system. Detection of a Li1 Al4/7Fe 3/704 compound: C. R. Acad. Sci., Ser. C, V. 273, No. 15, p. 888-90. McNicol, B. D. and Pott...thermodynamic properties of lithium ferrate (LiO.5Fe2 .504) and lithium aluminate (LiO 5Al 2 504) from 5 to 545 K: J. Chem. Thermodyn., V. 7, No. 7, p. 693- 2...1977, Study of low-temperature hydrothermal crystallization in lithium oxide-silicon dioxide-water, potassium oxide-silicon dioxide-water, and

Analysis of thin baked-on silicone layers by FTIR and 3D-Laser Scanning Microscopy.

PubMed

Funke, Stefanie; Matilainen, Julia; Nalenz, Heiko; Bechtold-Peters, Karoline; Mahler, Hanns-Christian; Friess, Wolfgang

2015-10-01

Pre-filled syringes (PFS) and auto-injection devices with cartridges are increasingly used for parenteral administration. To assure functionality, silicone oil is applied to the inner surface of the glass barrel. Silicone oil migration into the product can be minimized by applying a thin but sufficient layer of silicone oil emulsion followed by thermal bake-on versus spraying-on silicone oil. Silicone layers thicker than 100nm resulting from regular spray-on siliconization can be characterized using interferometric profilometers. However, the analysis of thin silicone layers generated by bake-on siliconization is more challenging. In this paper, we have evaluated Fourier transform infrared (FTIR) spectroscopy after solvent extraction and a new 3D-Laser Scanning Microscopy (3D-LSM) to overcome this challenge. A multi-step solvent extraction and subsequent FTIR spectroscopy enabled to quantify baked-on silicone levels as low as 21-325μg per 5mL cartridge. 3D-LSM was successfully established to visualize and measure baked-on silicone layers as thin as 10nm. 3D-LSM was additionally used to analyze the silicone oil distribution within cartridges at such low levels. Both methods provided new, highly valuable insights to characterize the siliconization after processing, in order to achieve functionality. Copyright © 2015 Elsevier B.V. All rights reserved.

Rough SERS substrate based on gold coated porous silicon layer prepared on the silicon backside surface

NASA Astrophysics Data System (ADS)

Dridi, H.; Haji, L.; Moadhen, A.

2017-04-01

We report in this paper a novel method to elaborate rough Surface Enhanced Raman Scattering (SERS) substrate. A single layer of porous silicon was formed on the silicon backside surface. Morphological characteristics of the porous silicon layer before and after gold deposition were influenced by the rough character (gold size). The reflectance measurements showed a dependence of the gold nano-grains size on the surface nature, through the Localized Surface Plasmon (LSP) band properties. SERS signal of Rhodamine 6G used as a model analyte, adsorbed on the rough porous silicon layer revealed a marked enhancement of its vibrational modes intensities.

Method of forming contacts for a back-contact solar cell

DOEpatents

Manning, Jane

2015-10-20

Methods of forming contacts for solar cells are described. In one embodiment, a method includes forming a silicon layer above a substrate, forming and patterning a solid-state p-type dopant source on the silicon layer, forming an n-type dopant source layer over exposed regions of the silicon layer and over a plurality of regions of the solid-state p-type dopant source, and heating the substrate to provide a plurality of n-type doped silicon regions among a plurality of p-type doped silicon regions.

Method of forming contacts for a back-contact solar cell

DOEpatents

Manning, Jane

2014-07-15

Methods of forming contacts for solar cells are described. In one embodiment, a method includes forming a silicon layer above a substrate, forming and patterning a solid-state p-type dopant source on the silicon layer, forming an n-type dopant source layer over exposed regions of the silicon layer and over a plurality of regions of the solid-state p-type dopant source, and heating the substrate to provide a plurality of n-type doped silicon regions among a plurality of p-type doped silicon regions.

Influence of the Surface Layer on the Electrochemical Deposition of Metals and Semiconductors into Mesoporous Silicon

DOE Office of Scientific and Technical Information (OSTI.GOV)

Chubenko, E. B., E-mail: eugene.chubenko@gmail.com; Redko, S. V.; Sherstnyov, A. I.

2016-03-15

The influence of the surface layer on the process of the electrochemical deposition of metals and semiconductors into porous silicon is studied. It is shown that the surface layer differs in structure and electrical characteristics from the host porous silicon bulk. It is established that a decrease in the conductivity of silicon crystallites that form the surface layer of porous silicon has a positive effect on the process of the filling of porous silicon with metals and semiconductors. This is demonstrated by the example of nickel and zinc oxide. The effect can be used for the formation of nanocomposite materialsmore » on the basis of porous silicon and nanostructures with a high aspect ratio.« less

Metallic coatings on silicon substrates, and methods of forming metallic coatings on silicon substrates

DOEpatents

Branagan, Daniel J [Idaho Falls, ID; Hyde, Timothy A [Idaho Falls, ID; Fincke, James R [Los Alamos, NM

2008-03-11

The invention includes methods of forming a metallic coating on a substrate which contains silicon. A metallic glass layer is formed over a silicon surface of the substrate. The invention includes methods of protecting a silicon substrate. The substrate is provided within a deposition chamber along with a deposition target. Material from the deposition target is deposited over at least a portion of the silicon substrate to form a protective layer or structure which contains metallic glass. The metallic glass comprises iron and one or more of B, Si, P and C. The invention includes structures which have a substrate containing silicon and a metallic layer over the substrate. The metallic layer contains less than or equal to about 2 weight % carbon and has a hardness of at least 9.2 GPa. The metallic layer can have an amorphous microstructure or can be devitrified to have a nanocrystalline microstructure.

Buried Porous Silicon-Germanium Layers in Monocrystalline Silicon Lattices

NASA Technical Reports Server (NTRS)

Fathauer, Robert W. (Inventor); George, Thomas (Inventor); Jones, Eric W. (Inventor)

1998-01-01

Monocrystalline semiconductor lattices with a buried porous semiconductor layer having different chemical composition is discussed and monocrystalline semiconductor superlattices with a buried porous semiconductor layers having different chemical composition than that of its monocrystalline semiconductor superlattice are discussed. Lattices of alternating layers of monocrystalline silicon and porous silicon-germanium have been produced. These single crystal lattices have been fabricated by epitaxial growth of Si and Si-Ge layers followed by patterning into mesa structures. The mesa structures are strain etched resulting in porosification of the Si-Ge layers with a minor amount of porosification of the monocrystalline Si layers. Thicker Si-Ge layers produced in a similar manner emitted visible light at room temperature.

Influence of intermediate layers on the surface condition of laser crystallized silicon thin films and solar cell performance

DOE Office of Scientific and Technical Information (OSTI.GOV)

Höger, Ingmar, E-mail: ingmar.hoeger@ipht-jena.de; Gawlik, Annett; Brückner, Uwe

The intermediate layer (IL) between glass substrate and silicon plays a significant role in the optimization of multicrystalline liquid phase crystallized silicon thin film solar cells on glass. This study deals with the influence of the IL on the surface condition and the required chemical surface treatment of the crystallized silicon (mc-Si), which is of particular interest for a-Si:H heterojunction thin film solar cells. Two types of IL were investigated: sputtered silicon nitride (SiN) and a layer stack consisting of silicon nitride and silicon oxide (SiN/SiO). X-ray photoelectron spectroscopy measurements revealed the formation of silicon oxynitride (SiO{sub x}N{sub y}) ormore » silicon oxide (SiO{sub 2}) layers at the surface of the mc-Si after liquid phase crystallization on SiN or SiN/SiO, respectively. We propose that SiO{sub x}N{sub y} formation is governed by dissolving nitrogen from the SiN layer in the silicon melt, which segregates at the crystallization front during crystallization. This process is successfully hindered, when additional SiO layers are introduced into the IL. In order to achieve solar cell open circuit voltages above 500 mV, a removal of the formed SiO{sub x}N{sub y} top layer is required using sophisticated cleaning of the crystallized silicon prior to a-Si:H deposition. However, solar cells crystallized on SiN/SiO yield high open circuit voltage even when a simple wet chemical surface treatment is applied. The implementation of SiN/SiO intermediate layers facilitates the production of mesa type solar cells with open circuit voltages above 600 mV and a power conversion efficiency of 10%.« less

Method utilizing laser-processing for the growth of epitaxial p-n junctions

DOEpatents

Young, R.T.; Narayan, J.; Wood, R.F.

1979-11-23

This invention is a new method for the formation of epitaxial p-n junctions in silicon. The method is relatively simple, rapid, and reliable. It produces doped epitaxial layers which are of well-controlled thickness and whose electrical properties are satisfactory. An illustrative form of the method comprises co-depositing a selected dopant and amorphous silicon on a crystalline silicon substrate to form a doped layer of amorphous silicon thereon. This layer then is irradiated with at least one laser pulse to generate a melt front which moves through the layer, into the silicon body to a depth effecting melting of virginal silicon, and back to the surface of the layer. The method may be conducted with dopants (e.g., boron and phosphorus) whose distribution coefficients approximate unity.

Improved toughness of silicon carbide

NASA Technical Reports Server (NTRS)

Palm, J. A.

1975-01-01

Several techniques were employed to apply or otherwise form porous layers of various materials on the surface of hot-pressed silicon carbide ceramic. From mechanical properties measurements and studies, it was concluded that although porous layers could be applied to the silicon carbide ceramic, sufficient damage was done to the silicon carbide surface by the processing required so as to drastically reduce its mechanical strength. It was further concluded that there was little promise of success in forming an effective energy absorbing layer on the surface of already densified silicon carbide ceramic that would have the mechanical strength of the untreated or unsurfaced material. Using a process for the pressureless sintering of silicon carbide powders it was discovered that porous layers of silicon carbide could be formed on a dense, strong silicon carbide substrate in a single consolidation process.

Development of a Contactless Technique for Electrodeposition and Porous Silicon Formation

NASA Astrophysics Data System (ADS)

Zhao, Mingrui

One of the key active manufacturing technologies for 3D integration is through silicon vias (TSVs), which involves etching of deep vias in a silicon substrate that are filled with an electrodeposited metal, and subsequent removal of excess metal by chemical mechanical planarization (CMP). Electrodeposition often results in undesired voids in the TSV metal fill as well as a thick overburden layer. These via plating defects can severely degrade interconnect properties and lead to variation in via resistance, electrically open vias, and trapped plating chemicals that present a reliability hazard. Thick overburden layers result in lengthy and expensive CMP processing. We are proposing a technique that pursues a viable method of depositing a high quality metal inside vias with true bottom-up filling, using an additive-free deposition solution. The mechanism is based on a novel concept of electrochemical oxidation of backside silicon that releases electrons, and subsequent chemical etching of silicon dioxide for regeneration of the surface. Electrons are transported through the bulk silicon to the interface of the via bottom and the deposition solution, where the metal ions accept these electrons and electrodeposit resulting in the bottom-up filling of the large aspect ratio vias. With regions outside the vias covered bydielectric, no metal electrodeposition should occur in these regions. Our new bottom-up technique was initially examined and successfully demonstrated on blanket silicon wafers and shown to supply electrons to provide bottom-up filling advantage of through-hole plating and the depth tailorability of blind vias. We have also conducted a fundamental study that investigated the effect of various process parameters on the characteristics of deposited Cu and Ni and established correlations between metal filling properties and various electrochemical and solution variables. A copper sulfate solution with temperature of about 65°C was shown to be suitable for achieving stable and high values of current density that translated to copper deposition rates of 2.4 mum/min with good deposition uniformity. The importance of backside silicon oxidation and subsequent oxide etching on the kinetics of metal deposition on front side silicon has also been highlighted. Further, a process model was also developed to simulate the through silicon via copper filling process using conventional and contactless electrodeposition methods with no additives being used in the electrolyte solution. A series of electrochemical measurements were employed and integrated in the development of the comprehensive process simulator. The experimental data not only provided the necessary parameters for the model but also validated the simulation accuracy. From the simulation results, the "pinch-off" effect was observed for the additive-free conventional deposition process, which further causes partial filling and void formation. By contrast, a void-free filling with higher deposition rates was achieved by the use of the contactless technique. Moreover, experimental results of contactless electrodeposition on patterned wafers showed fast rate bottom-up filling ( 3.3 mum/min) in vias of 4 mum diameter and 50 mum depth (aspect ratio = 12.5) without void formation and no copper overburden in the regions outside the vias. Efforts were also made to extend the use of the contactless technique to other applications such as synthesis of porous silicon. We were able to fabricate porous silicon with a morphological gradient using a novel design of the experimental cell. The resulted porous silicon layers show a large distribution in porosity, pore size and depth along the radius of the samples. Symmetrical arrangements were attributed to decreasing current density radially inward on the silicon surface exposed to surfactant containing HF based etchant solution. The formation mechanism as well as morphological properties and their dependence on different process parameters has been investigated in detail. In the presence of surfactants, an increase in the distribution range of porosity, pore diameter and depth was observed by increasing HF concentration or lowering pH of the etchant solution, as the formation of pores was considered to be limited by the etch rates of silicon dioxide. Gradient porous silicon was also found to be successfully formulated both at high and low current densities. Interestingly, the morphological gradient was not developed when dimethyl sulfoxide (instead of surfactants) was used in etchant solution potentially due to limitations in the availability of oxidizing species at the silicon-etchant solution interface. In the last part of the dissertation, we have discussed the gradient bottom up filling of Cu in porous silicon substrates using the contactless electrochemical method. The radially symmetric current that gradually varied across the radius of the sample area was achieved by utilizing the modified cell design, which resulted in gradient filling in the vias. Effect of different deposition parameters such as applied current density, copper sulfate concentration and etching to deposition area ratio has been examined and discussed. (Abstract shortened by ProQuest.).

Amorphous silicon Schottky barrier solar cells incorporating a thin insulating layer and a thin doped layer

DOEpatents

Carlson, David E.

1980-01-01

Amorphous silicon Schottky barrier solar cells which incorporate a thin insulating layer and a thin doped layer adjacent to the junction forming metal layer exhibit increased open circuit voltages compared to standard rectifying junction metal devices, i.e., Schottky barrier devices, and rectifying junction metal insulating silicon devices, i.e., MIS devices.

Fabricating amorphous silicon solar cells by varying the temperature _of the substrate during deposition of the amorphous silicon layer

DOEpatents

Carlson, David E.

1982-01-01

An improved process for fabricating amorphous silicon solar cells in which the temperature of the substrate is varied during the deposition of the amorphous silicon layer is described. Solar cells manufactured in accordance with this process are shown to have increased efficiencies and fill factors when compared to solar cells manufactured with a constant substrate temperature during deposition of the amorphous silicon layer.

Strong White Photoluminescence from Carbon-Incorporated Silicon Oxide Fabricated by Preferential Oxidation of Silicon in Nano-Structured Si:C Layer

NASA Astrophysics Data System (ADS)

Vasin, Andriy V.; Ishikawa, Yukari; Shibata, Noriyoshi; Salonen, Jarno; Lehto, Vesa-Pekka

2007-05-01

A new approach to development of light-emitting SiO2:C layers on Si wafer is demonstrated. Carbon-incorporated silicon oxide was fabricated by three-step procedure: (1) formation of the porous silicon (por-Si) layer by ordinary anodization in HF:ethanol solution; (2) carbonization at 1000 °C in acetylene flow (formation of por-Si:C layer); (3) oxidation in the flow of moisturized argon at 800 °C (formation of SiO2:C layer). Resulting SiO2:C layer exhibited very strong and stable white photoluminescence at room temperature. It is shown that high reactivity of water vapor with nano-crystalline silicon and inertness with amorphous carbon play a key role in the formation of light-emitting SiO2:C layer.

Valeriana officinalis Dry Plant Extract for Direct Compression: Preparation and Characterization.

PubMed

Gallo, Loreana; Ramírez-Rigo, María Veronica; Piña, Juliana; Palma, Santiago; Allemandi, Daniel; Bucalá, Verónica

2012-01-01

Valeriana officinalis L. (Valerianaceae) is one of the most widely used plants for the treatment of anxiety and insomnia. Usually dry plant extracts, including V. officinalis, are hygroscopic materials with poor physico-mechanical properties that can be directly compressed.A V. officinalis dry extract with moderate hygroscocity is suitable for direct compression, and was obtained by using a simple and economical technique. The V. officinalis fluid extract was oven-dried with colloidal silicon dioxide as a drying adjuvant. The addition of colloidal silicon dioxide resulted in a dry plant extract with good physico-mechanical properties for direct compression and lower hygroscopicity than the dry extract without the carrier. The dry plant extract glass transition temperature was considerably above room temperature (about 72 °C). The colloidal silicon dioxide also produced an antiplasticizing effect, improving the powder's physical stability.The pharmaceutical performance of the prepared V. officinalis dry extract was studied through the design of tablets. The manufactured tablets showed good compactability, friability, hardness, and disintegration time. Those containing a disintegrant (Avicel PH 101) exhibited the best pharmaceutical performance, having the lowest disintegration time of around 40 seconds.

High-Efficiency Silicon Carbide (SiC) Converters. Delivery Order 0001: Development of High-Temperature, High-Power, High-Efficiency, High-Voltage Converters Using Silicon Carbide

DTIC Science & Technology

2004-03-01

32 Silicon Dioxide as a Mask ......................................................... 34 Silicon Nitride as a Mask...phosphorous (P), and arsenic (As) for n-type material and aluminum (Al), boron (B), beryllium (Be), gallium (Ga), oxygen (O), and scandium (Sc) for...O2 in carbon tetrafluoride (CF4), nitrogen trifluoride (NF3), and sulfur hexafluoride (SF6) were observed because these gases produce high fluorine

Improved method of preparing p-i-n junctions in amorphous silicon semiconductors

DOEpatents

Madan, A.

1984-12-10

A method of preparing p/sup +/-i-n/sup +/ junctions for amorphous silicon semiconductors includes depositing amorphous silicon on a thin layer of trivalent material, such as aluminum, indium, or gallium at a temperature in the range of 200/sup 0/C to 250/sup 0/C. At this temperature, the layer of trivalent material diffuses into the amorphous silicon to form a graded p/sup +/-i junction. A layer of n-type doped material is then deposited onto the intrinsic amorphous silicon layer in a conventional manner to finish forming the p/sup +/-i-n/sup +/ junction.

Effects of growth temperature on the properties of atomic layer deposition grown ZrO2 films

NASA Astrophysics Data System (ADS)

Scarel, G.; Ferrari, S.; Spiga, S.; Wiemer, C.; Tallarida, G.; Fanciulli, M.

2003-07-01

Zirconium dioxide films are grown in 200 atomic layer deposition cycles. Zirconium tetrachloride (ZrCl4) and water (H2O) are used as precursors. A relatively high dielectric constant (κ=22), wide band gap, and conduction band offset (5.8 and 1.4 eV, respectively) indicate that zirconium dioxide is a most promising substitute for silicon dioxide as a dielectric gate in complementary metal-oxide-semiconductor devices. However, crystallization and chlorine ions in the films might affect their electrical properties. These ions are produced during atomic layer deposition in which the ZrCl4 precursor reacts with the growth surface. It is desirable to tune the composition, morphology, and structural properties in order to improve their benefit on the electrical ones. To address this issue it is necessary to properly choose the growth parameters. This work focuses on the effects of the growth temperature Tg. ZrO2 films are grown at different substrate temperatures: 160, 200, 250, and 350 °C. Relevant modification of the film structure with a change in substrate temperature during growth is expected because the density of reactive sites [mainly Si+1-(OH)-1 bonds] decreases with an increase in temperature [Y. B. Kim et al., Electrochem. Solid-State Lett. 3, 346 (2000)]. The amorphous film component, for example, that develops at Si+1-(OH)-1 sites on the starting growth surface, is expected to decrease with an increase in growth temperature. The size and consequences of film property modifications with the growth temperature are investigated in this work using x-ray diffraction and reflectivity, and atomic force microscopy. Time of flight-secondary ion mass spectrometry is used to study contaminant species in the films. From capacitance-voltage (CV) and current-voltage (IV) measurements, respectively, the dielectric constant κZrO2 and the leakage current are studied as a function of the film growth temperature.

Deposition of gold nanoparticles from colloid on TiO2 surface

NASA Astrophysics Data System (ADS)

Rehacek, Vlastimil; Hotovy, Ivan

2017-11-01

In this paper, experimental results are presented on the deposition of colloidal gold nanoparticles on the surfaces of TiO2 prepared on silicon/silicon dioxide. Important procedures, such as titanium dioxide surface hydrophilization as well as functionalization by an organosilane coupling agent (3-aminopropyl) trimethoxysilane and (3-mercaptopropyl) trimethoxysilane were investigated in order to obtain a metal oxide surface with the most convenient properties for immobilization of gold nanoparticles having a dense and uniform distribution. TiO2 nanotips prepared by reactive ion etching of oxide surface covered with self-mask gold nanoparticles are demonstrated.

Room-temperature bonding of epitaxial layer to carbon-cluster ion-implanted silicon wafers for CMOS image sensors

NASA Astrophysics Data System (ADS)

Koga, Yoshihiro; Kadono, Takeshi; Shigematsu, Satoshi; Hirose, Ryo; Onaka-Masada, Ayumi; Okuyama, Ryousuke; Okuda, Hidehiko; Kurita, Kazunari

2018-06-01

We propose a fabrication process for silicon wafers by combining carbon-cluster ion implantation and room-temperature bonding for advanced CMOS image sensors. These carbon-cluster ions are made of carbon and hydrogen, which can passivate process-induced defects. We demonstrated that this combination process can be used to form an epitaxial layer on a carbon-cluster ion-implanted Czochralski (CZ)-grown silicon substrate with a high dose of 1 × 1016 atoms/cm2. This implantation condition transforms the top-surface region of the CZ-grown silicon substrate into a thin amorphous layer. Thus, an epitaxial layer cannot be grown on this implanted CZ-grown silicon substrate. However, this combination process can be used to form an epitaxial layer on the amorphous layer of this implanted CZ-grown silicon substrate surface. This bonding wafer has strong gettering capability in both the wafer-bonding region and the carbon-cluster ion-implanted projection range. Furthermore, this wafer inhibits oxygen out-diffusion to the epitaxial layer from the CZ-grown silicon substrate after device fabrication. Therefore, we believe that this bonding wafer is effective in decreasing the dark current and white-spot defect density for advanced CMOS image sensors.

Structure for implementation of back-illuminated CMOS or CCD imagers

NASA Technical Reports Server (NTRS)

Pain, Bedabrata (Inventor); Cunningham, Thomas J. (Inventor)

2009-01-01

A structure for implementation of back-illuminated CMOS or CCD imagers. An epitaxial silicon layer is connected with a passivation layer, acting as a junction anode. The epitaxial silicon layer converts light passing through the passivation layer and collected by the imaging structure to photoelectrons. A semiconductor well is also provided, located opposite the passivation layer with respect to the epitaxial silicon layer, acting as a junction cathode. Prior to detection, light does not pass through a dielectric separating interconnection metal layers.

Photovoltaic Device Including A Boron Doping Profile In An I-Type Layer

DOEpatents

Yang, Liyou

1993-10-26

A photovoltaic cell for use in a single junction or multijunction photovoltaic device, which includes a p-type layer of a semiconductor compound including silicon, an i-type layer of an amorphous semiconductor compound including silicon, and an n-type layer of a semiconductor compound including silicon formed on the i-type layer. The i-type layer including an undoped first sublayer formed on the p-type layer, and a boron-doped second sublayer formed on the first sublayer.

Fabrication of Integral Solar Cell Covers by the Plasma Activated Source.

DTIC Science & Technology

1981-01-01

1 Average Intrinsic Deposition Stress of Pyrolitic Silicon Oxynitride Films vs. Composition ................................... 7 2 Coefficient of...source for activated oxygen molecules which were reacted with, for example, silane at a solar cell surface to deposit amorphous silicon dioxide on the... Silicon Solar Cells ........ 51 44.6 SiO 2 Coatings in GaAs Solar Cells ........... 58 5.0 CONCLUSIONS..................................... 61 5.1

Monolithic microcircuit techniques and processes

NASA Technical Reports Server (NTRS)

Kennedy, B. W.

1972-01-01

Brief discussions of the techniques used to make dielectric and metal thin film depositions for monolithic circuits are presented. Silicon nitride deposition and the properties of silicon nitride films are discussed. Deposition of dichlorosilane and thermally grown silicon dioxide are reported. The deposition and thermal densification of borosilicate, aluminosilicate, and phosphosilicate glasses are discussed. Metallization for monolithic circuits and the characteristics of thin films are also included.

Efficiencies of Dye-Sensitized Solar Cells using Ferritin-Encapsulated Quantum Dots with Various Staining Methods

NASA Astrophysics Data System (ADS)

Perez, Luis

Dye-sensitized solar cells (DSSC) have the potential to replace traditional and cost-inefficient crystalline silicon or ruthenium solar cells. This can only be accomplished by optimizing DSSC's energy efficiency. One of the major components in a dye-sensitized solar cell is the porous layer of titanium dioxide. This layer is coated with a molecular dye that absorbs sunlight. The research conducted for this paper focuses on the different methods used to dye the porous TiO2 layer with ferritin-encapsulated quantum dots. Multiple anodes were dyed using a method known as SILAR which involves deposition through alternate immersion in two different solutions. The efficiencies of DSSCs with ferritin-encapsulated lead sulfide dye deposited using SILAR were subsequently compared against the efficiencies produced by cells using the traditional immersion method. It was concluded that both methods resulted in similar efficiencies (? .074%) however, the SILAR method dyed the TiO2 coating significantly faster than the immersion method. On a related note, our experiments concluded that conducting 2 SILAR cycles yields the highest possible efficiency for this particular binding method. National Science Foundation.

Stable and selective self-assembly of α-lipoic acid on Ge(001) for biomolecule immobilization

NASA Astrophysics Data System (ADS)

Kazmierczak, M.; Flesch, J.; Mitzloff, J.; Capellini, G.; Klesse, W. M.; Skibitzki, O.; You, C.; Bettenhausen, M.; Witzigmann, B.; Piehler, J.; Schroeder, T.; Guha, S.

2018-05-01

We demonstrate a novel method for the stable and selective surface functionalization of germanium (Ge) embedded in silicon dioxide. The Ge(001) surface is functionalized using α-lipoic acid (ALA), which can potentially be utilized for the immobilization of a wide range of biomolecules. We present a detailed pH-dependence study to establish the effect of the incubation pH value on the adsorption layer of the ALA molecules. A threshold pH value for functionalization is identified, dividing the examined pH range into two regions. Below a pH value of 7, the formation of a disordered ALA multilayer is observed, whereas a stable well-ordered ALA mono- to bi-layer on Ge(001) is achieved at higher pH values. Furthermore, we analyze the stability of the ALA layer under ambient conditions, revealing the most stable functionalized Ge(001) surface to effectively resist oxidation for up to one week. Our established functionalization method paves the way towards the successful immobilization of biomolecules in future Ge-based biosensors.

Core-shell Si@TiO 2 nanosphere anode by atomic layer deposition for Li-ion batteries

DOE PAGES

Dai, Sheng

2016-01-28

Silicon (Si) is regarded as next-generation anode for high-energy lithium-ion batteries (LIBs) due to its high Li storage capacity (4200 mA h g -1). However, the mechanical degradation and resultant capacity fade critically hinder its practical application. In this regard, we demonstrate that nanocoating of Si spheres with a 3 nm titanium dioxide (TiO 2) layer via atomic layer deposition (ALD) can utmostly balance the high conductivity and the good structural stability to improve the cycling stability of Si core material. The resultant sample, Si@TiO 2-3 nm core–shell nanospheres, exhibits the best electrochemical performance of all with a highest initialmore » Coulombic efficiency and specific charge capacity retention after 50 cycles at 0.1C (82.39% and 1580.3 mA h g -1). In addition to making full advantage of the ALD technique, we believe that our strategy and comprehension in coating the electrode and the active material could provide a useful pathway towards enhancing Si anode material itself and community of LIBs.« less

Development and characterization of high refractive index and high scattering acrylate polymer layers

NASA Astrophysics Data System (ADS)

Eiselt, Thomas; Gomard, Guillaume; Preinfalk, Jan; Gleissner, Uwe; Lemmer, Uli; Hanemann, Thomas

2016-04-01

The aim is to develop a polymer layer which has the ability to diffuse light homogeneously and exhibit a high refractive index. The mixtures are containing an acrylate casting resin, benzylmethacrylate, phenanthrene and other additives. Phenanthrene is employed to increase the refractive index. The mixtures are first rheologically characterized and then polymerized with heat and UV radiation. For the refractive index measurements the polymerized samples require a planar surface without air bubbles. To produce flat samples a special construction consisting of a glass plate, a teflon sheet, a silicone ring (PDMS mold), another teflon sheet and another glass plate is developed. Glue clamps are used to fix this construction together. Selected samples have a refractive index of 1.585 at 20°C at a wavelength of 589nm. A master mixture with a high refractive index is taken for further experiments. Nano scaled titanium dioxide is added and dispersed into the master mixture and then spin coated on a glass substrate. These layers are optically characterized. The specular transmission and the overall transmission are measured to investigate the degree of scattering, which is defined as the haze. Most of the presented layers express the expected haze of over 50%.

Understanding the Structure of High-K Gate Oxides - Oral Presentation

DOE Office of Scientific and Technical Information (OSTI.GOV)

Miranda, Andre

2015-08-25

Hafnium Oxide (HfO 2) amorphous thin films are being used as gate oxides in transistors because of their high dielectric constant (κ) over Silicon Dioxide. The present study looks to find the atomic structure of HfO 2 thin films which hasn’t been done with the technique of this study. In this study, two HfO 2 samples were studied. One sample was made with thermal atomic layer deposition (ALD) on top of a Chromium and Gold layer on a silicon wafer. The second sample was made with plasma ALD on top of a Chromium and Gold layer on a Silicon wafer.more » Both films were deposited at a thickness of 50nm. To obtain atomic structure information, Grazing Incidence X-ray diffraction (GIXRD) was carried out on the HfO 2 samples. Because of this, absorption, footprint, polarization, and dead time corrections were applied to the scattering intensity data collected. The scattering curves displayed a difference in structure between the ALD processes. The plasma ALD sample showed the broad peak characteristic of an amorphous structure whereas the thermal ALD sample showed an amorphous structure with characteristics of crystalline materials. This appears to suggest that the thermal process results in a mostly amorphous material with crystallites within. Further, the scattering intensity data was used to calculate a pair distribution function (PDF) to show more atomic structure. The PDF showed atom distances in the plasma ALD sample had structure up to 10 Å, while the thermal ALD sample showed the same structure below 10 Å. This structure that shows up below 10 Å matches the bond distances of HfO 2 published in literature. The PDF for the thermal ALD sample also showed peaks up to 20 Å, suggesting repeating atomic spacing outside the HfO 2 molecule in the sample. This appears to suggest that there is some crystalline structure within the thermal ALD sample.« less

Understanding the Structure of Amorphous Thin Film Hafnia - Final Paper

DOE Office of Scientific and Technical Information (OSTI.GOV)

Miranda, Andre

2015-08-27

Hafnium Oxide (HfO 2) amorphous thin films are being used as gate oxides in transistors because of their high dielectric constant (κ) over Silicon Dioxide. The present study looks to find the atomic structure of HfO 2 thin films which hasn’t been done with the technique of this study. In this study, two HfO 2 samples were studied. One sample was made with thermal atomic layer deposition (ALD) on top of a Chromium and Gold layer on a silicon wafer. The second sample was made with plasma ALD on top of a Chromium and Gold layer on a Silicon wafer.more » Both films were deposited at a thickness of 50nm. To obtain atomic structure information, Grazing Incidence X-ray diffraction (GIXRD) was carried out on the HfO 2 samples. Because of this, absorption, footprint, polarization, and dead time corrections were applied to the scattering intensity data collected. The scattering curves displayed a difference in structure between the ALD processes. The plasma ALD sample showed the broad peak characteristic of an amorphous structure whereas the thermal ALD sample showed an amorphous structure with characteristics of crystalline materials. This appears to suggest that the thermal process results in a mostly amorphous material with crystallites within. Further, the scattering intensity data was used to calculate a pair distribution function (PDF) to show more atomic structure. The PDF showed atom distances in the plasma ALD sample had structure up to 10 Å, while the thermal ALD sample showed the same structure below 10 Å. This structure that shows up below 10 Å matches the bond distances of HfO 2 published in literature. The PDF for the thermal ALD sample also showed peaks up to 20 Å, suggesting repeating atomic spacing outside the HfO 2 molecule in the sample. This appears to suggest that there is some crystalline structure within the thermal ALD sample.« less

Surface Characterization of an Organized Titanium Dioxide Layer

NASA Astrophysics Data System (ADS)

Curtis, Travis

Soft lithographic printing techniques can be used to control the surface morphology of titanium dioxide layers on length scales of several hundred nanometers. Controlling surface morphology and volumetric organization of titanium dioxide electrodes can potentially be used in dye-sensitized solar cell devices. This thesis explores how layer-by-layer replication can lead to well defined, dimensionally controlled volumes and details how these control mechanisms influence surface characteristics of the semiconducting oxide.

Selective etching of silicon carbide films

DOEpatents

Gao, Di; Howe, Roger T.; Maboudian, Roya

2006-12-19

A method of etching silicon carbide using a nonmetallic mask layer. The method includes providing a silicon carbide substrate; forming a non-metallic mask layer by applying a layer of material on the substrate; patterning the mask layer to expose underlying areas of the substrate; and etching the underlying areas of the substrate with a plasma at a first rate, while etching the mask layer at a rate lower than the first rate.

Graphene Quantum Dot Layers with Energy-Down-Shift Effect on Crystalline-Silicon Solar Cells.

PubMed

Lee, Kyung D; Park, Myung J; Kim, Do-Yeon; Kim, Soo M; Kang, Byungjun; Kim, Seongtak; Kim, Hyunho; Lee, Hae-Seok; Kang, Yoonmook; Yoon, Sam S; Hong, Byung H; Kim, Donghwan

2015-09-02

Graphene quantum dot (GQD) layers were deposited as an energy-down-shift layer on crystalline-silicon solar cell surfaces by kinetic spraying of GQD suspensions. A supersonic air jet was used to accelerate the GQDs onto the surfaces. Here, we report the coating results on a silicon substrate and the GQDs' application as an energy-down-shift layer in crystalline-silicon solar cells, which enhanced the power conversion efficiency (PCE). GQD layers deposited at nozzle scan speeds of 40, 30, 20, and 10 mm/s were evaluated after they were used to fabricate crystalline-silicon solar cells; the results indicate that GQDs play an important role in increasing the optical absorptivity of the cells. The short-circuit current density was enhanced by about 2.94% (0.9 mA/cm(2)) at 30 mm/s. Compared to a reference device without a GQD energy-down-shift layer, the PCE of p-type silicon solar cells was improved by 2.7% (0.4 percentage points).

Novel duplex vapor-electrochemical method for silicon solar cells

NASA Technical Reports Server (NTRS)

Kapur, V. K.; Nanis, L.; Sanjurjo, A.

1977-01-01

Silicon was produced by alternate pulse feeding of the reactants SiF4 gas and liquid sodium. The average temperature in the reactor could be controlled, by regulating the amount of reactant in each pulse. Silicon tetrafluoride gas was analyzed by mass spectrometry to determine the nature and amount of contained volatile impurities which included silicon oxyfluorides, sulfur oxyfluorides, and sulfur dioxide. Sodium metal was analyzed by emission spectrography, and it was found to contain only calcium and copper as impurities.

Leakage current conduction and reliability assessment of passivating thin silicon dioxide films on n-4H-SiC

NASA Astrophysics Data System (ADS)

Samanta, Piyas; Mandal, Krishna C.

2016-09-01

We have analyzed the mechanisms of leakage current conduction in passivating silicon dioxide (SiO2) films grown on (0 0 0 1) silicon (Si) face of n-type 4H-SiC (silicon carbide). It was observed that the experimentally measured gate current density in metal-oxide-silicon carbide (MOSiC) structures under positive gate bias at an oxide field Eox above 5 MV/cm is comprised of Fowler-Nordheim (FN) tunneling of electrons from the accumulated n-4H-SiC and Poole-Frenkel (PF) emission of trapped electrons from the localized neutral traps in the SiO2 gap, IFN and IPF, respectively at temperatures between 27 and 200 °C. In MOSiC structures, PF mechanism dominates FN tunneling of electrons from the accumulation layer of n-4H-SiC due to high density (up to 1013 cm-2) of carbon-related acceptor-like traps located at about 2.5 eV below the SiO2 conduction band (CB). These current conduction mechanisms were taken into account in studying hole injection/trapping into 10 nm-thick tunnel oxide on the Si face of 4H-SiC during electron injection from n-4H-SiC under high-field electrical stress with positive bias on the heavily doped n-type polysilicon (n+-polySi) gate at a wide range of temperatures between 27 and 200 °C. Holes were generated in the n+-polySi anode material by the hot-electrons during their transport through thin oxide films at oxide electric fields Eox from 5.6 to 8.0 MV/cm (prior to the intrinsic oxide breakdown field). Time-to-breakdown tBD of the gate dielectric was found to follow reciprocal field (1/E) model irrespective of stress temperatures. Despite the significant amount of process-induced interfacial electron traps contributing to a large amount of leakage current via PF emission in thermally grown SiO2 on the Si-face of n-4H-SiC, MOSiC devices having a 10 nm-thick SiO2 film can be safely used in 5 V TTL logic circuits over a period of 10 years.

Deposition of carbon-free silicon dioxide from pure hexamethyldisiloxane using an atmospheric microplasma jet

DOE Office of Scientific and Technical Information (OSTI.GOV)

Raballand, V.; Benedikt, J.; Keudell, A. von

2008-03-03

Carbon-free silicon dioxide has been deposited at room temperature by injection of pure hexamethyldisiloxane (HMDSO) into an atmospheric pressure microplasma jet from argon. At low HMDSO flow rates [<0.1 SCCM (SCCM denotes cubic centimeter per minute at STP)], the SiO{sub x}H{sub z} films contain no carbon and exhibit an oxygen to silicon ratio close to 2 according to x-ray photoelectron spectroscopy. At high HMDSO flow rates (>0.1 SCCM), SiO{sub x}C{sub y}H{sub z} films with a carbon content of up to 21% are obtained. The transition between organic to inorganic film is confirmed by Fourier transformed infrared spectroscopy. The deposition ofmore » inorganic films without oxygen admixture is explained by an ion-induced polymerization scheme of HMDSO.« less

Micromachined electrical cauterizer

DOEpatents

Lee, Abraham P.; Krulevitch, Peter A.; Northrup, M. Allen

1999-01-01

A micromachined electrical cauterizer. Microstructures are combined with microelectrodes for highly localized electro cauterization. Using boron etch stops and surface micromachining, microneedles with very smooth surfaces are made. Micromachining also allows for precision placement of electrodes by photolithography with micron sized gaps to allow for concentrated electric fields. A microcauterizer is fabricated by bulk etching silicon to form knife edges, then parallelly placed microelectrodes with gaps as small as 5 .mu.m are patterned and aligned adjacent the knife edges to provide homeostasis while cutting tissue. While most of the microelectrode lines are electrically insulated from the atmosphere by depositing and patterning silicon dioxide on the electric feedthrough portions, a window is opened in the silicon dioxide to expose the parallel microelectrode portion. This helps reduce power loss and assist in focusing the power locally for more efficient and safer procedures.

Micromachined electrical cauterizer

DOEpatents

Lee, A.P.; Krulevitch, P.A.; Northrup, M.A.

1999-08-31

A micromachined electrical cauterizer is disclosed. Microstructures are combined with microelectrodes for highly localized electro cauterization. Using boron etch stops and surface micromachining, microneedles with very smooth surfaces are made. Micromachining also allows for precision placement of electrodes by photolithography with micron sized gaps to allow for concentrated electric fields. A microcauterizer is fabricated by bulk etching silicon to form knife edges, then parallelly placed microelectrodes with gaps as small as 5 {mu}m are patterned and aligned adjacent the knife edges to provide homeostasis while cutting tissue. While most of the microelectrode lines are electrically insulated from the atmosphere by depositing and patterning silicon dioxide on the electric feedthrough portions, a window is opened in the silicon dioxide to expose the parallel microelectrode portion. This helps reduce power loss and assist in focusing the power locally for more efficient and safer procedures. 7 figs.

Measuring charge nonuniformity in MOS devices

NASA Technical Reports Server (NTRS)

Maserjian, J.; Zamani, N.

1980-01-01

Convenient method of determining inherent lateral charge non-uniformities along silicon dioxide/silicon interface of metal-oxide-semiconductor (MOS) employs rapid measurement of capacitance of interface as function of voltage at liquid nitrogen temperature. Charge distribution is extracted by fast-Fourier-transform analysis of capacitance voltage (C-V) measurement.

Low-temperature electron cyclotron resonance plasma-enhanced chemical-vapor deposition silicon dioxide as gate insulator for polycrystalline silicon thin-film transistors

DOE Office of Scientific and Technical Information (OSTI.GOV)

Maiolo, L.; Pecora, A.; Fortunato, G.

2006-03-15

Silicon dioxide films have been deposited at temperatures below 270 deg. C in an electron cyclotron resonance (ECR) plasma reactor from O{sub 2}, SiH{sub 4}, and He gas mixture. Pinhole density analysis as a function of substrate temperature for different microwave powers was carried out. Films deposited at higher microwave power and at room temperature show defect densities (<7 pinhole/mm{sup 2}), ensuring low-temperature process integration on large area. From Fourier transform infrared analysis and thermal desorption spectrometry we also evaluated very low hydrogen content if compared to conventional rf-plasma-enhanced chemical-vapor-deposited (PECVD) SiO{sub 2} deposited at 350 deg. C. Electrical propertiesmore » have been measured in metal-oxide-semiconductor (MOS) capacitors, depositing SiO{sub 2} at RT as gate dielectric; breakdown electric fields >10 MV/cm and charge trapping at fields >6 MV/cm have been evaluated. From the study of interface quality in MOS capacitors, we found that even for low annealing temperature (200 deg. C), it is possible to considerably reduce the interface state density down to 5x10{sup 11} cm{sup -2} eV{sup -1}. To fully validate the ECR-PECVD silicon dioxide we fabricated polycrystalline silicon thin-film transistors using RT-deposited SiO{sub 2} as gate insulator. Different postdeposition thermal treatments have been studied and good device characteristics were obtained even for annealing temperature as low as 200 deg. C.« less

Impact of Nanoparticles and Natural Organic Matter on the Removal of Organic Pollutants by Activated Carbon Adsorption

EPA Science Inventory

Isotherm experiments evaluating trichloroethylene (TCE) adsorption onto powdered activated carbon (PAC) were conducted in the presence and absence of three commercially available nanomaterials— iron oxide (Fe2O3), titanium dioxide (TiO2), and silicon dioxide (SiO2). Isotherm exp...

Biophysical mechanisms of modification of skin optical properties in the UV wavelength range with nanoparticles

NASA Astrophysics Data System (ADS)

Popov, A. P.; Priezzhev, A. V.; Lademann, J.; Myllylä, R.

2009-05-01

In this paper, by means of the Mie theory and Monte Carlo simulations we investigate modification of optical properties of the superficial layer of human skin (stratum corneum) for 310- and 400-nm ultraviolet (UV) radiation by embedding of 35-200-nm-sized particles of titanium dioxide (TiO2) and silicon (Si). Problem of skin protection against UV light is of major importance due to increased frequency of skin cancer provoked by excessive doses of accepted UV radiation. For 310-nm light, the optimal sizes of the TiO2 and Si particles are found to be 62 and 55 nm, respectively, and for 400-nm radiation, 122 and 70 nm, respectively.

High-quality photonic crystals with a nearly complete band gap obtained by direct inversion of woodpile templates with titanium dioxide.

PubMed

Marichy, Catherine; Muller, Nicolas; Froufe-Pérez, Luis S; Scheffold, Frank

2016-02-25

Photonic crystal materials are based on a periodic modulation of the dielectric constant on length scales comparable to the wavelength of light. These materials can exhibit photonic band gaps; frequency regions for which the propagation of electromagnetic radiation is forbidden due to the depletion of the density of states. In order to exhibit a full band gap, 3D PCs must present a threshold refractive index contrast that depends on the crystal structure. In the case of the so-called woodpile photonic crystals this threshold is comparably low, approximately 1.9 for the direct structure. Therefore direct or inverted woodpiles made of high refractive index materials like silicon, germanium or titanium dioxide are sought after. Here we show that, by combining multiphoton lithography and atomic layer deposition, we can achieve a direct inversion of polymer templates into TiO2 based photonic crystals. The obtained structures show remarkable optical properties in the near-infrared region with almost perfect specular reflectance, a transmission dip close to the detection limit and a Bragg length comparable to the lattice constant.

Anti-reflective device having an anti-reflective surface formed of silicon spikes with nano-tips

NASA Technical Reports Server (NTRS)

Bae, Youngsam (Inventor); Manohara, Harish (Inventor); Mobasser, Sohrab (Inventor); Lee, Choonsup (Inventor)

2011-01-01

Described is a device having an anti-reflection surface. The device comprises a silicon substrate with a plurality of silicon spikes formed on the substrate. A first metallic layer is formed on the silicon spikes to form the anti-reflection surface. The device further includes an aperture that extends through the substrate. A second metallic layer is formed on the substrate. The second metallic layer includes a hole that is aligned with the aperture. A spacer is attached with the silicon substrate to provide a gap between an attached sensor apparatus. Therefore, operating as a Micro-sun sensor, light entering the hole passes through the aperture to be sensed by the sensor apparatus. Additionally, light reflected by the sensor apparatus toward the first side of the silicon substrate is absorbed by the first metallic layer and silicon spikes and is thereby prevented from being reflected back toward the sensor apparatus.

Anti- reflective device having an anti-reflection surface formed of silicon spikes with nano-tips

NASA Technical Reports Server (NTRS)

Bae, Youngsman (Inventor); Mooasser, Sohrab (Inventor); Manohara, Harish (Inventor); Lee, Choonsup (Inventor); Bae, Kungsam (Inventor)

2009-01-01

Described is a device having an anti-reflection surface. The device comprises a silicon substrate with a plurality of silicon spikes formed on the substrate. A first metallic layer is formed on the silicon spikes to form the anti-reflection surface. The device further includes an aperture that extends through the substrate. A second metallic layer is formed on the substrate. The second metallic layer includes a hole that is aligned with the aperture. A spacer is attached with the silicon substrate to provide a gap between an attached sensor apparatus. Therefore, operating as a Micro-sun sensor, light entering the hole passes through the aperture to be sensed by the sensor apparatus. Additionally, light reflected by the sensor apparatus toward the first side of the silicon substrate is absorbed by the first metallic layer and silicon spikes and is thereby prevented from being reflected back toward the sensor apparatus.

Y1Ba2Cu3O(6+delta) growth on thin Y-enhanced SiO2 buffer layers on silicon

NASA Technical Reports Server (NTRS)

Robin, T.; Mesarwi, A.; Wu, N. J.; Fan, W. C.; Espoir, L.; Ignatiev, A.; Sega, R.

1991-01-01

SiO2 buffer layers as thin as 2 nm have been developed for use in the growth of Y1Ba2Cu3O(6+delta) thin films on silicon substrates. The SiO2 layers are formed through Y enhancement of silicon oxidation, and are highly stoichiometric. Y1Ba2Cu3O(6+delta) film growth on silicon with thin buffer layers has shown c orientation and Tc0 = 78 K.

Hydrogen ion microlithography

DOEpatents

Tsuo, Y. Simon; Deb, Satyen K.

1990-01-01

Disclosed is a hydrogen ion microlithography process for use in microelectronic fabrication and semiconductor device processing. The process comprises the steps of providing a single layer of either an amorphous silicon or hydrogenated amorphous silicon material. A pattern is recorded in a selected layer of amorphous silicon or hydrogenated amorphous silicon materials by preferentially implanting hydrogen ions therein so as to permit the selected layer to serve as a mask-resist wafer suitable for subsequent development and device fabrication. The layer is developed to provide a surface pattern therein adaptable for subsequent use in microelectronic fabrication and semiconductor device processing.

Heterogeneous processes in CF4/O2 plasmas probed using laser-induced fluorescence of CF2

NASA Astrophysics Data System (ADS)

Hansen, S. G.; Luckman, G.; Nieman, George C.; Colson, Steven D.

1990-09-01

Laser-induced fluorescence of CF2 is used to monitor heterogeneous processes in ≊300 mTorr CF4/O2 plasmas. CF2 is rapidly removed at fluorinated copper and silver surfaces in 13.56-MHz rf discharges as judged by a distinct dip in its spatial distribution. These metals, when employed as etch masks, are known to accelerate plasma etching of silicon, and the present results suggest catalytic dehalogenation of CF2 is involved in this process. In contrast, aluminum and silicon dioxide exhibit negligible reactivity with CF2, which suggests that aluminum masks will not appreciably accelerate silicon etching and that ground state CF2 does not efficiently etch silicon dioxide. Measurement of CF2 decay in a pulsed discharge coupled with direct laser sputtering of metal into the gas phase indicates the interaction between CF2 and the active metals is purely heterogeneous. Aluminum does, however, exhibit homogeneous reactivity with CF2. Redistribution of active metal by plasma sputtering readily occurs; silicon etch rates may also be enhanced by the metal's presence on the silicon surface. Polymers contribute CF2 to the plasma as they etch. The observation of an induction period suggests fluorination of the polymer surface is the first step in its degradation. Polymeric etch masks can therefore depress the silicon etch rate by removal of F atoms, the primary etchants.

Advanced numerical technique for analysis of surface and bulk acoustic waves in resonators using periodic metal gratings

NASA Astrophysics Data System (ADS)

Naumenko, Natalya F.

2014-09-01

A numerical technique characterized by a unified approach for the analysis of different types of acoustic waves utilized in resonators in which a periodic metal grating is used for excitation and reflection of such waves is described. The combination of the Finite Element Method analysis of the electrode domain with the Spectral Domain Analysis (SDA) applied to the adjacent upper and lower semi-infinite regions, which may be multilayered and include air as a special case of a dielectric material, enables rigorous simulation of the admittance in resonators using surface acoustic waves, Love waves, plate modes including Lamb waves, Stonely waves, and other waves propagating along the interface between two media, and waves with transient structure between the mentioned types. The matrix formalism with improved convergence incorporated into SDA provides fast and robust simulation for multilayered structures with arbitrary thickness of each layer. The described technique is illustrated by a few examples of its application to various combinations of LiNbO3, isotropic silicon dioxide and silicon with a periodic array of Cu electrodes. The wave characteristics extracted from the admittance functions change continuously with the variation of the film and plate thicknesses over wide ranges, even when the wave nature changes. The transformation of the wave nature with the variation of the layer thicknesses is illustrated by diagrams and contour plots of the displacements calculated at resonant frequencies.

In-depth porosity control of mesoporous silicon layers by an anodization current adjustment

NASA Astrophysics Data System (ADS)

Lascaud, J.; Defforge, T.; Certon, D.; Valente, D.; Gautier, G.

2017-12-01

The formation of thick mesoporous silicon layers in P+-type substrates leads to an increase in the porosity from the surface to the interface with silicon. The adjustment of the current density during the electrochemical etching of porous silicon is an intuitive way to control the layer in-depth porosity. The duration and the current density during the anodization were varied to empirically model porosity variations with layer thickness and build a database. Current density profiles were extracted from the model in order to etch layer with in-depth control porosity. As a proof of principle, an 80 μm-thick porous silicon multilayer was synthetized with decreasing porosities from 55% to 35%. The results show that the assessment of the in-depth porosity could be significantly enhanced by taking into account the pure chemical etching of the layer in the hydrofluoric acid-based electrolyte.

Application of porous silicon in solar cell

NASA Astrophysics Data System (ADS)

Maniya, Nalin H.; Ashokan, Jibinlal; Srivastava, Divesh N.

2018-05-01

Silicon is widely used in solar cell applications with over 95% of all solar cells produced worldwide composed of silicon. Nanostructured thin porous silicon (PSi) layer acting as anti-reflecting coating is used in photovoltaic solar cells due to its advantages including simple and low cost fabrication, highly textured surfaces enabling lowering of reflectance, controllability of thickness and porosity of layer, and high surface area. PSi layers have previously been reported to reduce the reflection of light and replaced the conventional anti-reflective coating layers on solar cells. This can essentially improve the efficiency and decrease the cost of silicon solar cells. Here, we investigate the reflectance of different PSi layers formed by varying current density and etching time. PSi layers were formed by a combination of current density including 60 and 80 mA/cm2 and time for fabrication as 2, 4, 6, and 8 seconds. The fabricated PSi layers were characterized using reflectance spectroscopy and field emission scanning electron microscopy. Thickness and pore size of PSi layer were increased with increase in etching time and current density, respectively. The reflectance of PSi layers was decreased with increase in etching time until 6 seconds and increased again after 6 seconds, which was observed across both the current density. Reduction in reflectance indicates the increase of absorption of light by silicon due to the thin PSi layer. In comparison with the reflectance of silicon wafer, PSi layer fabricated at 80 mA/cm2 for 6 seconds gave the best result with reduction in reflectance up to 57%. Thus, the application of PSi layer as an effective anti-reflecting coating for the fabrication of solar cell has been demonstrated.

Effect of layer thickness on device response of silicon heavily supersaturated with sulfur

DOE Office of Scientific and Technical Information (OSTI.GOV)

Hutchinson, David; Department of Physics and Nuclear Engineering, United States Military Academy, West Point NY 10996; Mathews, Jay

2016-05-15

We report on a simple experiment in which the thickness of a hyperdoped silicon layer, supersaturated with sulfur by ion implantation followed by pulsed laser melting and rapid solidification, is systematically varied at constant average sulfur concentration, by varying the implantation energy, dose, and laser fluence. Contacts are deposited and the external quantum efficiency (EQE) is measured for visible wavelengths. We posit that the sulfur layer primarily absorbs light but contributes negligible photocurrent, and we seek to support this by analyzing the EQE data for the different layer thicknesses in two interlocking ways. In the first, we use the measuredmore » concentration depth profiles to obtain the approximate layer thicknesses, and, for each wavelength, fit the EQE vs. layer thickness curve to obtain the absorption coefficient of hyperdoped silicon for that wavelength. Comparison to literature values for the hyperdoped silicon absorption coefficients [S.H. Pan et al. Applied Physics Letters 98, 121913 (2011)] shows good agreement. Next, we essentially run this process in reverse; we fit with Beer’s law the curves of EQE vs. hyperdoped silicon absorption coefficient for those wavelengths that are primarily absorbed in the hyperdoped silicon layer, and find that the layer thicknesses obtained from the fit are in good agreement with the original values obtained from the depth profiles. We conclude that the data support our interpretation of the hyperdoped silicon layer as providing negligible photocurrent at high S concentrations. This work validates the absorption data of Pan et al. [Applied Physics Letters 98, 121913 (2011)], and is consistent with reports of short mobility-lifetime products in hyperdoped layers. It suggests that for optoelectronic devices containing hyperdoped layers, the most important contribution to the above band gap photoresponse may be due to photons absorbed below the hyperdoped layer.« less

Silicon carbide-free graphene growth on silicon for lithium-ion battery with high volumetric energy density

PubMed Central

Son, In Hyuk; Hwan Park, Jong; Kwon, Soonchul; Park, Seongyong; Rümmeli, Mark H.; Bachmatiuk, Alicja; Song, Hyun Jae; Ku, Junhwan; Choi, Jang Wook; Choi, Jae-man; Doo, Seok-Gwang; Chang, Hyuk

2015-01-01

Silicon is receiving discernable attention as an active material for next generation lithium-ion battery anodes because of its unparalleled gravimetric capacity. However, the large volume change of silicon over charge–discharge cycles weakens its competitiveness in the volumetric energy density and cycle life. Here we report direct graphene growth over silicon nanoparticles without silicon carbide formation. The graphene layers anchored onto the silicon surface accommodate the volume expansion of silicon via a sliding process between adjacent graphene layers. When paired with a commercial lithium cobalt oxide cathode, the silicon carbide-free graphene coating allows the full cell to reach volumetric energy densities of 972 and 700 Wh l−1 at first and 200th cycle, respectively, 1.8 and 1.5 times higher than those of current commercial lithium-ion batteries. This observation suggests that two-dimensional layered structure of graphene and its silicon carbide-free integration with silicon can serve as a prototype in advancing silicon anodes to commercially viable technology. PMID:26109057

Method for producing silicon thin-film transistors with enhanced forward current drive

DOEpatents

Weiner, K.H.

1998-06-30

A method is disclosed for fabricating amorphous silicon thin film transistors (TFTs) with a polycrystalline silicon surface channel region for enhanced forward current drive. The method is particularly adapted for producing top-gate silicon TFTs which have the advantages of both amorphous and polycrystalline silicon TFTs, but without problem of leakage current of polycrystalline silicon TFTs. This is accomplished by selectively crystallizing a selected region of the amorphous silicon, using a pulsed excimer laser, to create a thin polycrystalline silicon layer at the silicon/gate-insulator surface. The thus created polysilicon layer has an increased mobility compared to the amorphous silicon during forward device operation so that increased drive currents are achieved. In reverse operation the polysilicon layer is relatively thin compared to the amorphous silicon, so that the transistor exhibits the low leakage currents inherent to amorphous silicon. A device made by this method can be used, for example, as a pixel switch in an active-matrix liquid crystal display to improve display refresh rates. 1 fig.

Method for producing silicon thin-film transistors with enhanced forward current drive

DOEpatents

Weiner, Kurt H.

1998-01-01

A method for fabricating amorphous silicon thin film transistors (TFTs) with a polycrystalline silicon surface channel region for enhanced forward current drive. The method is particularly adapted for producing top-gate silicon TFTs which have the advantages of both amorphous and polycrystalline silicon TFTs, but without problem of leakage current of polycrystalline silicon TFTs. This is accomplished by selectively crystallizing a selected region of the amorphous silicon, using a pulsed excimer laser, to create a thin polycrystalline silicon layer at the silicon/gate-insulator surface. The thus created polysilicon layer has an increased mobility compared to the amorphous silicon during forward device operation so that increased drive currents are achieved. In reverse operation the polysilicon layer is relatively thin compared to the amorphous silicon, so that the transistor exhibits the low leakage currents inherent to amorphous silicon. A device made by this method can be used, for example, as a pixel switch in an active-matrix liquid crystal display to improve display refresh rates.

System and Method for Fabricating Super Conducting Circuitry on Both Sides of an Ultra-Thin Layer

NASA Technical Reports Server (NTRS)

Brown, Ari D. (Inventor); Mikula, Vilem (Inventor)

2017-01-01

A method of fabricating circuitry in a wafer includes depositing a superconducting metal on a silicon on insulator wafer having a handle wafer, coating the wafer with a sacrificial layer and bonding the wafer to a thermally oxide silicon wafer with a first epoxy. The method includes flipping the wafer, thinning the flipped wafer by removing a handle wafer, etching a buried oxide layer, depositing a superconducting layer, bonding the wafer to a thermally oxidized silicon wafer having a handle wafer using an epoxy, flipping the wafer again, thinning the flipped wafer, etching a buried oxide layer from the wafer and etching the sacrificial layer from the wafer. The result is a wafer having superconductive circuitry on both sides of an ultra-thin silicon layer.

Process for Fabrication of Superconducting Vias for Electrical Connection to Groundplane in Cryogenic Detectors

NASA Technical Reports Server (NTRS)

Denis, Kevin L. (Inventor)

2018-01-01

Disclosed are systems, methods, and non-transitory computer-readable storage media for fabrication of silicon on insulator (SOI) wafers with a superconductive via for electrical connection to a groundplane. Fabrication of the SOI wafer with a superconductive via can involve depositing a superconducting groundplane onto a substrate with the superconducting groundplane having an oxidizing layer and a non-oxidizing layer. A layer of monocrystalline silicon can be bonded to the superconducting groundplane and a photoresist layer can be applied to the layer of monocrystalline silicon and the SOI wafer can be etched with the oxygen rich etching plasma, resulting in a monocrystalline silicon top layer with a via that exposes the superconducting groundplane. Then, the fabrication can involve depositing a superconducting surface layer to cover the via.

Photo-EMF Sensitivity of Porous Silicon Thin Layer–Crystalline Silicon Heterojunction to Ammonia Adsorption

PubMed Central

Vashpanov, Yuriy; Jung, Jae Il; Kwack, Kae Dal

2011-01-01

A new method of using photo-electromotive force in detecting gas and controlling sensitivity is proposed. Photo-electromotive force on the heterojunction between porous silicon thin layer and crystalline silicon wafer depends on the concentration of ammonia in the measurement chamber. A porous silicon thin layer was formed by electrochemical etching on p-type silicon wafer. A gas and light transparent electrical contact was manufactured to this porous layer. Photo-EMF sensitivity corresponding to ammonia concentration in the range from 10 ppm to 1,000 ppm can be maximized by controlling the intensity of illumination light. PMID:22319353

Silicon-on Ceramic Process: Silicon Sheet Growth and Device Development for the Large-area Silicon Sheet and Cell Development Tasks of the Low-cost Solar Array Project

NASA Technical Reports Server (NTRS)

Chapman, P. W.; Zook, J. D.; Heaps, J. D.; Grung, B. L.; Koepke, B.; Schuldt, S. B.

1979-01-01

The technical and economic feasibility of producing solar cell-quality silicon was investigated. This was done by coating one surface of carbonized ceramic substrates with a thin layer of large-grain polycrystalline silicon from the melt. Significant progress in the following areas was demonstrated: (1) fabricating a 10 sq cm cell having 9.9 percent conversion efficiency; (2) producing a 225 sq cm layer of sheet silicon; and (3) obtaining 100 microns thick coatings at pull speed of 0.15 cm/sec, although approximately 50 percent of the layer exhibited dendritic growth.

Process for utilizing low-cost graphite substrates for polycrystalline solar cells

NASA Technical Reports Server (NTRS)

Chu, T. L. (Inventor)

1978-01-01

Low cost polycrystalline silicon solar cells supported on substrates were prepared by depositing successive layers of polycrystalline silicon containing appropriate dopants over supporting substrates of a member selected from the group consisting of metallurgical grade polycrystalline silicon, graphite and steel coated with a diffusion barrier of silica, borosilicate, phosphosilicate, or mixtures thereof such that p-n junction devices were formed which effectively convert solar energy to electrical energy. To improve the conversion efficiency of the polycrystalline silicon solar cells, the crystallite size in the silicon was substantially increased by melting and solidifying a base layer of polycrystalline silicon before depositing the layers which form the p-n junction.

Glass-silicon column

DOEpatents

Yu, Conrad M.

2003-12-30

A glass-silicon column that can operate in temperature variations between room temperature and about 450.degree. C. The glass-silicon column includes large area glass, such as a thin Corning 7740 boron-silicate glass bonded to a silicon wafer, with an electrode embedded in or mounted on glass of the column, and with a self alignment silicon post/glass hole structure. The glass/silicon components are bonded, for example be anodic bonding. In one embodiment, the column includes two outer layers of silicon each bonded to an inner layer of glass, with an electrode imbedded between the layers of glass, and with at least one self alignment hole and post arrangement. The electrode functions as a column heater, and one glass/silicon component is provided with a number of flow channels adjacent the bonded surfaces.

Transfer of micro and nano-photonic silicon nanomembrane waveguide devices on flexible substrates.

PubMed

Ghaffari, Afshin; Hosseini, Amir; Xu, Xiaochuan; Kwong, David; Subbaraman, Harish; Chen, Ray T

2010-09-13

This paper demonstrates transfer of optical devices without extra un-patterned silicon onto low-cost, flexible plastic substrates using single-crystal silicon nanomembranes. Employing this transfer technique, stacking two layers of silicon nanomembranes with photonic crystal waveguide in the first layer and multi mode interference couplers in the second layer is shown, respectively. This technique is promising to realize high density integration of multilayer hybrid structures on flexible substrates.

Nanoscale density variations induced by high energy heavy ions in amorphous silicon nitride and silicon dioxide

NASA Astrophysics Data System (ADS)

Mota-Santiago, P.; Vazquez, H.; Bierschenk, T.; Kremer, F.; Nadzri, A.; Schauries, D.; Djurabekova, F.; Nordlund, K.; Trautmann, C.; Mudie, S.; Ridgway, M. C.; Kluth, P.

2018-04-01

The cylindrical nanoscale density variations resulting from the interaction of 185 MeV and 2.2 GeV Au ions with 1.0 μm thick amorphous SiN x :H and SiO x :H layers are determined using small angle x-ray scattering measurements. The resulting density profiles resembles an under-dense core surrounded by an over-dense shell with a smooth transition between the two regions, consistent with molecular-dynamics simulations. For amorphous SiN x :H, the density variations show a radius of 4.2 nm with a relative density change three times larger than the value determined for amorphous SiO x :H, with a radius of 5.5 nm. Complementary infrared spectroscopy measurements exhibit a damage cross-section comparable to the core dimensions. The morphology of the density variations results from freezing in the local viscous flow arising from the non-uniform temperature profile in the radial direction of the ion path. The concomitant drop in viscosity mediated by the thermal conductivity appears to be the main driving force rather than the presence of a density anomaly.

Fabrication of Thin Film Heat Flux Sensors

NASA Technical Reports Server (NTRS)

Will, Herbert A.

1992-01-01

Prototype thin film heat flux sensors have been constructed and tested. The sensors can be applied to propulsion system materials and components. The sensors can provide steady state and fast transient heat flux information. Fabrication of the sensor does not require any matching of the mounting surface. Heat flux is proportional to the temperature difference across the upper and lower surfaces of an insulation material. The sensor consists of an array of thermocouples on the upper and lower surfaces of a thin insulating layer. The thermocouples for the sensor are connected in a thermopile arrangement. A 100 thermocouple pair heat flux sensor has been fabricated on silicon wafers. The sensor produced an output voltage of 200-400 microvolts when exposed to a hot air heat gun. A 20 element thermocouple pair heat flux sensor has been fabricated on aluminum oxide sheet. Thermocouples are Pt-Pt/Rh with silicon dioxide as the insulating material. This sensor produced an output of 28 microvolts when exposed to the radiation of a furnace operating at 1000 C. Work is also underway to put this type of heat flux sensor on metal surfaces.

Heterojunction photodetector based on graphene oxide sandwiched between ITO and p-Si

NASA Astrophysics Data System (ADS)

Ahmad, H.; Tajdidzadeh, M.; Thandavan, T. M. K.

2018-02-01

The drop casting method is utilized on indium tin oxide (ITO)-coated glass in order to prepare a sandwiched ITO/graphene oxide (ITO/GO) with silicon dioxide/p-type silicon (SiO2/p-Si) heterojunction photodetector. The partially sandwiched GO layer with SiO2/p-Si substrate exhibits dual characteristics as it showed good sensitivity towards the illumination of infrared (IR) laser at wavelength of 974 nm. Excellent photoconduction is also observed for current-voltage (I-V) characteristics at various laser powers. An external quantum efficiency greater than 1 for a direct current bias voltage of 0 and 3 V reveals significant photoresponsivity of the photodetector at various laser frequency modulation at 1, 5 and 9 Hz. The rise times are found to be 75, 72 and 70 μs for 1, 5 and 9 Hz while high fall times 455, 448 and 426 are measured for the respective frequency modulation. The fabricated ITO/GO-SiO2/p-Si sandwiched heterojunction photodetector can be considered as a good candidate for applications in the IR regions that do not require a high-speed response.

Stable Organic Monolayers on Oxide-Free Silicon/Germanium in a Supercritical Medium: A New Route to Molecular Electronics.

PubMed

Puniredd, Sreenivasa Reddy; Jayaraman, Sundaramurthy; Yeong, Sai Hooi; Troadec, Cedric; Srinivasan, M P

2013-05-02

Oxide-free Si and Ge surfaces have been passivated and modified with organic molecules by forming covalent bonds between the surfaces and reactive end groups of linear alkanes and aromatic species using single-step deposition in supercritical carbon dioxide (SCCO2). The process is suitable for large-scale manufacturing due to short processing times, simplicity, and high resistance to oxidation. It also allows the formation of monolayers with varying reactive terminal groups, thus enabling formation of nanostructures engineered at the molecular level. Ballistic electron emission microscopy (BEEM) spectra performed on the organic monolayer on oxide-free silicon capped by a thin gold layer reveals for the first time an increase in transmission of the ballistic current through the interface of up to three times compared to a control device, in contrast to similar studies reported in the literature suggestive of oxide-free passivation in SCCO2. The SCCO2 process combined with the preliminary BEEM results opens up new avenues for interface engineering, leading to molecular electronic devices.

Immobilization, stabilization and patterning techniques for enzyme based sensor systems.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Flounders, A.W.; Carichner, S.C.; Singh, A.K.

1997-01-01

Sandia National Laboratories has recently opened the Chemical and Radiation Detection Laboratory (CRDL) in Livermore CA to address the detection needs of a variety of government agencies (e.g., Department of Energy, Environmental Protection Agency, Department of Agriculture) as well as provide a fertile environment for the cooperative development of new industrial technologies. This laboratory consolidates a variety of existing chemical and radiation detection efforts and enables Sandia to expand into the novel area of biochemically based sensors. One aspect of this biosensor effort is further development and optimization of enzyme modified field effect transistors (EnFETs). Recent work has focused uponmore » covalent attachment of enzymes to silicon dioxide and silicon nitride surfaces for EnFET fabrication. They are also investigating methods to pattern immobilized proteins; a critical component for development of array-based sensor systems. Novel enzyme stabilization procedures are key to patterning immobilized enzyme layers while maintaining enzyme activity. Results related to maximized enzyme loading, optimized enzyme activity and fluorescent imaging of patterned surfaces will be presented.« less

Fabrication of directional sound sensor by silicon micromachining

NASA Astrophysics Data System (ADS)

Touse, Michael; Catterlin, Jeffrey; Sinibaldi, Jose; Karunasiri, Gamani

2009-03-01

A directional sound sensor based on the operational principle of the Ormia ochracea fly's hearing organism [1] was fabricated using micro-electromechanical system (MEMS) technology. The fly uses coupled bars hinged at the center to achieve directional sound sensing by monitoring the difference in their vibration amplitudes. The MEMS design employed in this work consisted of a 1x2 square millimeter polysilicon membrane hinged at the center and positioned about 1 micrometer above the substrate using a sacrificial silicon dioxide layer. Finite element analysis of the device shows two primary vibrational mode frequencies, one corresponding to a rocking mode which is highly dependent on angle of incidence, and the other to a bending motion which remains constant through all angles. Using a laser vibrometer to measure response, rocking and bending modes were observed at driving frequencies of 3.0 and 11.4 kHz, respectively, and angular dependence was in close agreement with modeling. [1] R.N. Miles, R. Robert, and R. R. Hoy, ``Mechanically coupled ears for directional hearing in the parasitoid fly Ormia ochracea,'' J. Acoust. Soc. Am., 98 (6), Dec. 1995

N-Type delta Doping of High-Purity Silicon Imaging Arrays

NASA Technical Reports Server (NTRS)

Blacksberg, Jordana; Hoenk, Michael; Nikzad, Shouleh

2005-01-01

A process for n-type (electron-donor) delta doping has shown promise as a means of modifying back-illuminated image detectors made from n-doped high-purity silicon to enable them to detect high-energy photons (ultraviolet and x-rays) and low-energy charged particles (electrons and ions). This process is applicable to imaging detectors of several types, including charge-coupled devices, hybrid devices, and complementary metal oxide/semiconductor detector arrays. Delta doping is so named because its density-vs.-depth characteristic is reminiscent of the Dirac delta function (impulse function): the dopant is highly concentrated in a very thin layer. Preferably, the dopant is concentrated in one or at most two atomic layers in a crystal plane and, therefore, delta doping is also known as atomic-plane doping. The use of doping to enable detection of high-energy photons and low-energy particles was reported in several prior NASA Tech Briefs articles. As described in more detail in those articles, the main benefit afforded by delta doping of a back-illuminated silicon detector is to eliminate a "dead" layer at the back surface of the silicon wherein high-energy photons and low-energy particles are absorbed without detection. An additional benefit is that the delta-doped layer can serve as a back-side electrical contact. Delta doping of p-type silicon detectors is well established. The development of the present process addresses concerns specific to the delta doping of high-purity silicon detectors, which are typically n-type. The present process involves relatively low temperatures, is fully compatible with other processes used to fabricate the detectors, and does not entail interruption of those processes. Indeed, this process can be the last stage in the fabrication of an imaging detector that has, in all other respects, already been fully processed, including metallized. This process includes molecular-beam epitaxy (MBE) for deposition of three layers, including metallization. The success of the process depends on accurate temperature control, surface treatment, growth of high-quality crystalline silicon, and precise control of thicknesses of layers. MBE affords the necessary nanometer- scale control of the placement of atoms for delta doping. More specifically, the process consists of MBE deposition of a thin silicon buffer layer, the n-type delta doping layer, and a thin silicon cap layer. The n dopant selected for initial experiments was antimony, but other n dopants as (phosphorus or arsenic) could be used. All n-type dopants in silicon tend to surface-segregate during growth, leading to a broadened dopant-concentration- versus-depth profile. In order to keep the profile as narrow as possible, the substrate temperature is held below 300 C during deposition of the silicon cap layer onto the antimony delta layer. The deposition of silicon includes a silicon- surface-preparation step, involving H-termination, that enables the growth of high-quality crystalline silicon at the relatively low temperature with close to full electrical activation of donors in the surface layer.

A silicon dioxide modified magnetic nanoparticles-labeled lateral flow strips for HBs antigen.

PubMed

Zhang, Xueqing; Jiang, Lin; Zhang, Chunlei; Li, Ding; Wang, Can; Gao, Feng; Cui, Daxiang

2011-12-01

Herein we reported a new type of silicon dioxide wrapped magnetic nanoparticles-labeled lateral flow strip for detection of HBs antigen in sera. The SiO2 wrapped Fe3O4 nanocomposites were prepared and characterized by HR-TEM, FTIR and magnetometer. As-prepared nanocomposites were used to label anti-HBV surface monoclonal antibody, the lateral flow strips were constructed, and 100 specimens of sera were collected and tested. Results showed that the prepared SiO2 wrapped Fe3O4 nanocomposites were shell/core structure, well dispersed, with the size of 25 nm in diameter, the thickness of the shell was about 3 nm, their magnetic saturation intensity was 44.3 meu g(-1). Clinical sera specimens test results showed that the prepared lateral flow strips were with the detection limitation of 5 pg/mL by naked eye observation, and 0.1 pg/mL by CCD reader or MAR Analyzer, specificity was 100%. In conclusion, one kind of silicon dioxide wrapped magnetic nanoparticles-labeled lateral flow strip for ultrasensitive detection of HBs antigen was successfully developed, its ease of use, sensitiveness and low-cost make it well-suited for population-based on-the-site hepatitis B screening.

Valeriana officinalis Dry Plant Extract for Direct Compression: Preparation and Characterization

PubMed Central

Gallo, Loreana; Ramírez-Rigo, María Veronica; Piña, Juliana; Palma, Santiago; Allemandi, Daniel; Bucalá, Verónica

2012-01-01

Valeriana officinalis L. (Valerianaceae) is one of the most widely used plants for the treatment of anxiety and insomnia. Usually dry plant extracts, including V. officinalis, are hygroscopic materials with poor physico-mechanical properties that can be directly compressed. A V. officinalis dry extract with moderate hygroscocity is suitable for direct compression, and was obtained by using a simple and economical technique. The V. officinalis fluid extract was oven-dried with colloidal silicon dioxide as a drying adjuvant. The addition of colloidal silicon dioxide resulted in a dry plant extract with good physico-mechanical properties for direct compression and lower hygroscopicity than the dry extract without the carrier. The dry plant extract glass transition temperature was considerably above room temperature (about 72 °C). The colloidal silicon dioxide also produced an antiplasticizing effect, improving the powder’s physical stability. The pharmaceutical performance of the prepared V. officinalis dry extract was studied through the design of tablets. The manufactured tablets showed good compactability, friability, hardness, and disintegration time. Those containing a disintegrant (Avicel PH 101) exhibited the best pharmaceutical performance, having the lowest disintegration time of around 40 seconds. PMID:23264947

Silicon based substrate with calcium aluminosilicate/thermal barrier layer

NASA Technical Reports Server (NTRS)

Eaton, Jr., Harry Edwin (Inventor); Allen, William Patrick (Inventor); Miller, Robert Alden (Inventor); Jacobson, Nathan S. (Inventor); Smialek, James L. (Inventor); Opila, Elizabeth J. (Inventor); Lee, Kang N. (Inventor); Nagaraj, Bangalore A. (Inventor); Wang, Hongyu (Inventor); Meschter, Peter Joel (Inventor)

2001-01-01

A barrier layer for a silicon containing substrate which inhibits the formation of gaseous species of silicon when exposed to a high temperature aqueous environment comprises a calcium alumino silicate.

Silicon based substrate with environmental/thermal barrier layer

NASA Technical Reports Server (NTRS)

Eaton, Jr., Harry Edwin (Inventor); Allen, William Patrick (Inventor); Jacobson, Nathan S. (Inventor); Bansal, Narottam P. (Inventor); Opila, Elizabeth J. (Inventor); Smialek, James L. (Inventor); Lee, Kang N. (Inventor); Spitsberg, Irene T. (Inventor); Wang, Hongyu (Inventor); Meschter, Peter Joel (Inventor)

2002-01-01

A barrier layer for a silicon containing substrate which inhibits the formation of gaseous species of silicon when exposed to a high temperature aqueous environment comprises a barium-strontium alumino silicate.

Silicon based substrate with environmental/ thermal barrier layer

NASA Technical Reports Server (NTRS)

Eaton, Jr., Harry Edwin (Inventor); Allen, William Patrick (Inventor); Jacobson, Nathan S. (Inventor); Bansal, Nanottam P. (Inventor); Opila, Elizabeth J. (Inventor); Smialek, James L. (Inventor); Lee, Kang N. (Inventor); Spitsberg, Irene T. (Inventor); Wang, Hongyu (Inventor); Meschter, Peter Joel (Inventor)

2002-01-01

A barrier layer for a silicon containing substrate which inhibits the formation of gaseous species of silicon when exposed to a high temperature aqueous environment comprises a barium-strontium alumino silicate.

Impact of pre- and/or syn-tectonic salt layers in the hangingwall geometry of a kinked-planar extensional fault: insights from analogue modelling and comparison with the Parentis basin (bay of Biscay)

NASA Astrophysics Data System (ADS)

Ferrer, O.; Vendeville, B. C.; Roca, E.

2012-04-01

Using sandbox analogue modelling we determine the role played by a pre-kinematic or a syn-kinematic viscous salt layer during rollover folding of the hangingwall of a normal fault with a variable kinked-planar geometry, as well as understand the origin and the mechanisms that control the formation, kinematic evolution and geometry of salt structures developed in the hangingwall of this fault. The experiments we conducted consisted of nine models made of dry quartz-sand (35μm average grain size) simulating brittle rocks and a viscous silicone polymer (SMG 36 from Dow Corning) simulating salt in nature. The models were constructed between two end walls, one of which was fixed, whereas the other was moved by a motor-driven worm screw. The fixed wall was part of the rigid footwall of the model's master border fault. This fault was simulated using three different wood block configurations, which was overlain by a flexible (but not stretchable) sheet that was attached to the mobile endwall of the model. We applied three different infill hangingwall configurations to each fault geometry: (1) without silicone (sand only), (2) sand overlain by a pre-kinematic silicone layer deposited above the entire hanginwall, and (3) sand partly overlain by a syn-kinematic silicone layer that overlain only parts of the hangingwall. All models were subjected to a 14 cm of basement extension in a direction orthogonal to that of the border fault. Results show that the presence of a viscous layer (silicone) clearly controls the deformation pattern of the hangingwall. Thus, regardless of the silicone layer's geometry (either pre- or syn-extensional) or the geometry of the extensional fault, the silicone layer acts as a very efficient detachment level separating two different structural styles in each unit. In particular, the silicone layer acts as an extensional ductile shear zone inhibiting upward propagation of normal faults and/or shears bands from the sub-silicone layers. Whereas the basement is affected by antithetic normal faults that are more or less complex depending on the geometry of the master fault, the lateral flow of the silicone produces salt-cored anticlines, walls and diapirs in the overburden of the hangingwall. The mechanical behavior of the silicone layer as an extensional shear zone, combined with the lateral changes in pressure gradients due to overburden thickness changes, triggered the silicone migration from the half-graben depocenter towards the rollover shoulder. As a result, the accumulation of silicone produces gentle silicone-cored anticlines and local diapirs with minor extensional faults. Upwards fault propagation from the sub-silicone "basement" to the supra-silicone unit only occurs either when the supra- and sub-silicone materials are welded, or when the amount of slip along the master fault is large enough so that the tip of the silicone reaches the junction between the upper and lower panels of the master faults. Comparison between the results of these models with data from the western offshore Parentis Basin (Eastern Bay of Biscay) validates the structural interpretation of this region.

Field Effect Transistors Using Atomically Thin Layers of Copper Indium Selenide (CuInSe)

NASA Astrophysics Data System (ADS)

Patil, Prasanna; Ghosh, Sujoy; Wasala, Milinda; Lei, Sidong; Vajtai, Robert; Ajayan, Pulickel; Talapatra, Saikat

We will report fabrication of field-effect transistors (FETs) using few-layers of Copper Indium Selenide (CuInSe) flakes exfoliated from crystals grown using chemical vapor transport technique. Our transport measurements indicate n-type FET with electron mobility µ ~ 3 cm2 V-1 s-1 at room temperature when Silicon dioxide (SiO2) is used as a back gate. Mobility can be further increased significantly when ionic liquid 1-Butyl-3-methylimidazolium hexafluorophosphate (BMIM-PF6) is used as top gate. Similarly subthreshold swing can be further improved from 103 V/dec to 0.55 V/dec by using ionic liquid as a top gate. We also found ON/OFF ratio of ~ 102 for both top and back gate. Comparison between ionic liquid top gate and SiO2 back gate will be presented and discussed. This work is supported by the U.S. Army Research Office through a MURI Grant # W911NF-11-1-0362.

Silicon based substrate with calcium aluminosilicate environmental/thermal barrier layer

NASA Technical Reports Server (NTRS)

Eaton, Jr., Harry Edwin (Inventor); Allen, William Patrick (Inventor); Miller, Robert Alden (Inventor); Jacobson, Nathan S. (Inventor); Smialek, James L. (Inventor); Opila, Elizabeth J. (Inventor); Lee, Kang N. (Inventor); Nagaraj, Bangalore A. (Inventor); Wang, Hongyu (Inventor); Meschter, Peter Joel (Inventor)

2001-01-01

A barrier layer for a silicon containing substrate which inhibits the formation of gaseous species of silicon when exposed to a high temperature aqueous environment comprises a calcium alumino silicate.

Vertical integration of high-Q silicon nitride microresonators into silicon-on-insulator platform.

PubMed

Li, Qing; Eftekhar, Ali A; Sodagar, Majid; Xia, Zhixuan; Atabaki, Amir H; Adibi, Ali

2013-07-29

We demonstrate a vertical integration of high-Q silicon nitride microresonators into the silicon-on-insulator platform for applications at the telecommunication wavelengths. Low-loss silicon nitride films with a thickness of 400 nm are successfully grown, enabling compact silicon nitride microresonators with ultra-high intrinsic Qs (~ 6 × 10(6) for 60 μm radius and ~ 2 × 10(7) for 240 μm radius). The coupling between the silicon nitride microresonator and the underneath silicon waveguide is based on evanescent coupling with silicon dioxide as buffer. Selective coupling to a desired radial mode of the silicon nitride microresonator is also achievable using a pulley coupling scheme. In this work, a 60-μm-radius silicon nitride microresonator has been successfully integrated into the silicon-on-insulator platform, showing a single-mode operation with an intrinsic Q of 2 × 10(6).

Composite materials and bodies including silicon carbide and titanium diboride and methods of forming same

DOEpatents

Lillo, Thomas M.; Chu, Henry S.; Harrison, William M.; Bailey, Derek

2013-01-22

Methods of forming composite materials include coating particles of titanium dioxide with a substance including boron (e.g., boron carbide) and a substance including carbon, and reacting the titanium dioxide with the substance including boron and the substance including carbon to form titanium diboride. The methods may be used to form ceramic composite bodies and materials, such as, for example, a ceramic composite body or material including silicon carbide and titanium diboride. Such bodies and materials may be used as armor bodies and armor materials. Such methods may include forming a green body and sintering the green body to a desirable final density. Green bodies formed in accordance with such methods may include particles comprising titanium dioxide and a coating at least partially covering exterior surfaces thereof, the coating comprising a substance including boron (e.g., boron carbide) and a substance including carbon.

Amorphous silicon carbide passivating layers for crystalline-silicon-based heterojunction solar cells

DOE Office of Scientific and Technical Information (OSTI.GOV)

Boccard, Mathieu; Holman, Zachary C.

Amorphous silicon enables the fabrication of very high-efficiency crystalline-silicon-based solar cells due to its combination of excellent passivation of the crystalline silicon surface and permeability to electrical charges. Yet, amongst other limitations, the passivation it provides degrades upon high-temperature processes, limiting possible post-deposition fabrication possibilities (e.g., forcing the use of low-temperature silver pastes). We investigate the potential use of intrinsic amorphous silicon carbide passivating layers to sidestep this issue. The passivation obtained using device-relevant stacks of intrinsic amorphous silicon carbide with various carbon contents and doped amorphous silicon are evaluated, and their stability upon annealing assessed, amorphous silicon carbide beingmore » shown to surpass amorphous silicon for temperatures above 300 °C. We demonstrate open-circuit voltage values over 700 mV for complete cells, and an improved temperature stability for the open-circuit voltage. Transport of electrons and holes across the hetero-interface is studied with complete cells having amorphous silicon carbide either on the hole-extracting side or on the electron-extracting side, and a better transport of holes than of electrons is shown. Also, due to slightly improved transparency, complete solar cells using an amorphous silicon carbide passivation layer on the hole-collecting side are demonstrated to show slightly better performances even prior to annealing than obtained with a standard amorphous silicon layer.« less

Amorphous silicon carbide passivating layers for crystalline-silicon-based heterojunction solar cells

DOE Office of Scientific and Technical Information (OSTI.GOV)

Boccard, Mathieu; Holman, Zachary C.

With this study, amorphous silicon enables the fabrication of very high-efficiency crystalline-silicon-based solar cells due to its combination of excellent passivation of the crystalline silicon surface and permeability to electrical charges. Yet, amongst other limitations, the passivation it provides degrades upon high-temperature processes, limiting possible post-deposition fabrication possibilities (e.g., forcing the use of low-temperature silver pastes). We investigate the potential use of intrinsic amorphous silicon carbide passivating layers to sidestep this issue. The passivation obtained using device-relevant stacks of intrinsic amorphous silicon carbide with various carbon contents and doped amorphous silicon are evaluated, and their stability upon annealing assessed, amorphousmore » silicon carbide being shown to surpass amorphous silicon for temperatures above 300°C. We demonstrate open-circuit voltage values over 700 mV for complete cells, and an improved temperature stability for the open-circuit voltage. Transport of electrons and holes across the hetero-interface is studied with complete cells having amorphous silicon carbide either on the hole-extracting side or on the electron-extracting side, and a better transport of holes than of electrons is shown. Also, due to slightly improved transparency, complete solar cells using an amorphous silicon carbide passivation layer on the hole-collecting side are demonstrated to show slightly better performances even prior to annealing than obtained with a standard amorphous silicon layer.« less

Amorphous silicon carbide passivating layers for crystalline-silicon-based heterojunction solar cells

DOE PAGES

Boccard, Mathieu; Holman, Zachary C.

2015-08-14

With this study, amorphous silicon enables the fabrication of very high-efficiency crystalline-silicon-based solar cells due to its combination of excellent passivation of the crystalline silicon surface and permeability to electrical charges. Yet, amongst other limitations, the passivation it provides degrades upon high-temperature processes, limiting possible post-deposition fabrication possibilities (e.g., forcing the use of low-temperature silver pastes). We investigate the potential use of intrinsic amorphous silicon carbide passivating layers to sidestep this issue. The passivation obtained using device-relevant stacks of intrinsic amorphous silicon carbide with various carbon contents and doped amorphous silicon are evaluated, and their stability upon annealing assessed, amorphousmore » silicon carbide being shown to surpass amorphous silicon for temperatures above 300°C. We demonstrate open-circuit voltage values over 700 mV for complete cells, and an improved temperature stability for the open-circuit voltage. Transport of electrons and holes across the hetero-interface is studied with complete cells having amorphous silicon carbide either on the hole-extracting side or on the electron-extracting side, and a better transport of holes than of electrons is shown. Also, due to slightly improved transparency, complete solar cells using an amorphous silicon carbide passivation layer on the hole-collecting side are demonstrated to show slightly better performances even prior to annealing than obtained with a standard amorphous silicon layer.« less

Silicon superlattices. 2: Si-Ge heterostructures and MOS systems

NASA Technical Reports Server (NTRS)

Moriarty, J. A.

1983-01-01

Five main areas were examined: (1) the valence-and conduction-band-edge electronic structure of the thin layer ( 11 A) silicon-superlattice systems; (2) extension of thin-layer calculations to layers of thickness 11 A, where most potential experimental interest lies; (3) the electronic structure of thicker-layer (11 to 110 A) silicon superlattices; (4) preliminary calculations of impurity-scattering-limited electron mobility in the thicker-layer superlattices; and (5) production of the fine metal lines that would be required to produce on MOS superlattice.

Hydrogen ion microlithography

DOEpatents

Tsuo, Y.S.; Deb, S.K.

1990-10-02

Disclosed is a hydrogen ion microlithography process for use in microelectronic fabrication and semiconductor device processing. The process comprises the steps of providing a single layer of either an amorphous silicon or hydrogenated amorphous silicon material. A pattern is recorded in a selected layer of amorphous silicon or hydrogenated amorphous silicon materials by preferentially implanting hydrogen ions therein so as to permit the selected layer to serve as a mask-resist wafer suitable for subsequent development and device fabrication. The layer is developed to provide a surface pattern therein adaptable for subsequent use in microelectronic fabrication and semiconductor device processing. 6 figs.

Passivation mechanism in silicon heterojunction solar cells with intrinsic hydrogenated amorphous silicon oxide layers

NASA Astrophysics Data System (ADS)

Deligiannis, Dimitrios; van Vliet, Jeroen; Vasudevan, Ravi; van Swaaij, René A. C. M. M.; Zeman, Miro

2017-02-01

In this work, we use intrinsic hydrogenated amorphous silicon oxide layers (a-SiOx:H) with varying oxygen content (cO) but similar hydrogen content to passivate the crystalline silicon wafers. Using our deposition conditions, we obtain an effective lifetime (τeff) above 5 ms for cO ≤ 6 at. % for passivation layers with a thickness of 36 ± 2 nm. We subsequently reduce the thickness of the layers using an accurate wet etching method to ˜7 nm and deposit p- and n-type doped layers fabricating a device structure. After the deposition of the doped layers, τeff appears to be predominantly determined by the doped layers themselves and is less dependent on the cO of the a-SiOx:H layers. The results suggest that τeff is determined by the field-effect rather than by chemical passivation.

Effect of the substrate on the insulator-metal transition of vanadium dioxide films

NASA Astrophysics Data System (ADS)

Kovács, György J.; Bürger, Danilo; Skorupa, Ilona; Reuther, Helfried; Heller, René; Schmidt, Heidemarie

2011-03-01

Single-phase vanadium dioxide films grown on (0001) sapphire and (001) silicon substrates show a very different insulator-metal electronic transition. A detailed description of the growth mechanisms and the substrate-film interaction is given, and the characteristics of the electronic transition are described by the morphology and grain boundary structure. (Tri-)epitaxy-stabilized columnar growth of VO2 takes place on the sapphire substrate, whereas on silicon the expected Zone II growth is identified. We have found that in the case of the Si substrate the reasons for the broader hysteresis and the lower switching amplitude are the formation of an amorphous insulating VOx (x > 2.6) phase coexisting with VO2 and the high vanadium vacancy concentration of the VO2. These phenomena are the result of the excess oxygen during the growth and the interaction between the silicon substrate and the growing film.

Research and Development for Continued Performance Improvement in Flexible a-Si PV

DTIC Science & Technology

2010-12-14

accomplished, however, at low temperatures silicides tend to form on the surface of the filament, which affected filament lifetime and deposition rate...considered. Titanium Nitride, sputtered As an alternative to the hot wire deposition of silicon, samples were prepared with various thicknesses of...Silicon 21 Insitu DC Sputtering Titanium Nitride 22 Metal Machine 2 ឈ> RF Oxygen Plasma Silicon Dioxide 20. Oxygen Etch Table A.4.1 Open circuit

TCAD Analysis of Heating and Maximum Current Density in Carbon Nanofiber Interconnects

DTIC Science & Technology

2011-09-01

a metallic MWCNT interconnect. From [20]. ....20  Figure 11.  Simple equivalent circuit model of a metallic MWCNT interconnect. From [20...Carbon Nanotube MWCNT Multi-Walled Carbon Nanotube SCU Santa Clara University Si Silicon SiO2 Silicon Dioxide SiC Silicon Carbide Au Gold...proven, multi-walled carbon nanotube ( MWCNT ) [2]. He later discovered single-walled carbon nanotubes (SWCNT) in 1993 [13]. Since Iijima’s discovery

The fabrication and visible-near-infrared optical modulation of vanadium dioxide/silicon dioxide composite photonic crystal structure

NASA Astrophysics Data System (ADS)

Liang, Jiran; Li, Peng; Song, Xiaolong; Zhou, Liwei

2017-12-01

We demonstrated a visible and near-infrared light tunable photonic nanostructure, which is composed of vanadium dioxide (VO2) thin film and silicon dioxide (SiO2) ordered nanosphere arrays. The vanadium films were sputtered on two-dimensional (2D) SiO2 sphere arrays. VO2 thin films were prepared by rapid thermal annealing (RTA) method with different oxygen flow rates. The close-packed VO2 shell formed a continuous surface, the composition of VO2 films in the structure changed when the oxygen flow rates increased. The 2D VO2/SiO2 composite photonic crystal structure exhibited transmittance trough tunability and near-infrared (NIR) transmittance modulation. When the oxygen flow rate increased from 3 slpm to 4 slpm, the largest transmittance trough can be regulated from 904 to 929 nm at low temperature, the transmittance troughs also appear blue shift when the VO2 phase changes from insulator to metal. The composite nanostructure based on VO2 films showed visible transmittance tunability, which would provide insights into the glass color changing in smart windows.

Compensated amorphous silicon solar cell

DOEpatents

Devaud, Genevieve

1983-01-01

An amorphous silicon solar cell including an electrically conductive substrate, a layer of glow discharge deposited hydrogenated amorphous silicon over said substrate and having regions of differing conductivity with at least one region of intrinsic hydrogenated amorphous silicon. The layer of hydrogenated amorphous silicon has opposed first and second major surfaces where the first major surface contacts the electrically conductive substrate and an electrode for electrically contacting the second major surface. The intrinsic hydrogenated amorphous silicon region is deposited in a glow discharge with an atmosphere which includes not less than about 0.02 atom percent mono-atomic boron. An improved N.I.P. solar cell is disclosed using a BF.sub.3 doped intrinsic layer.

Silicon (100)/SiO2 by XPS

DOE Office of Scientific and Technical Information (OSTI.GOV)

Jensen, David S.; Kanyal, Supriya S.; Madaan, Nitesh

2013-09-25

Silicon (100) wafers are ubiquitous in microfabrication and, accordingly, their surface characteristics are important. Herein, we report the analysis of Si (100) via X-ray photoelectron spectroscopy (XPS) using monochromatic Al K radiation. Survey scans show that the material is primarily silicon and oxygen, and the Si 2p region shows two peaks that correspond to elemental silicon and silicon dioxide. Using these peaks the thickness of the native oxide (SiO2) was estimated using the equation of Strohmeier.1 The oxygen peak is symmetric. The material shows small amounts of carbon, fluorine, and nitrogen contamination. These silicon wafers are used as the basemore » material for subsequent growth of templated carbon nanotubes.« less

Theoretical prediction of energy release rate for interface crack initiation by thermal stress in environmental barrier coatings for ceramics

NASA Astrophysics Data System (ADS)

Kawai, E.; Umeno, Y.

2017-05-01

As weight reduction of turbines for aircraft engines is demanded to improve fuel consumption and curb emission of carbon dioxide, silicon carbide (SiC) fiber reinforced SiC matrix composites (SiC/SiC) are drawing enormous attention as high-pressure turbine materials. For preventing degradation of SiC/SiC, environmental barrier coatings (EBC) for ceramics are deposited on the composites. The purpose of this study is to establish theoretical guidelines for structural design which ensures the mechanical reliability of EBC. We conducted finite element method (FEM) analysis to calculate energy release rates (ERRs) for interface crack initiation due to thermal stress in EBC consisting of Si-based bond coat, Mullite and Ytterbium (Yb)-silicate layers on a SiC/SiC substrate. In the FEM analysis, the thickness of one EBC layer was changed from 25 μm to 200 μm while the thicknesses of the other layers were fixed at 25 μm, 50 μm and 100 μm. We compared ERRs obtained by the FEM analysis and a simple theory for interface crack in a single-layered structure where ERR is estimated as nominal strain energy in the coating layers multiplied by a constant factor (independent of layer thicknesses). We found that, unlike the case of single-layered structures, the multiplication factor is no longer a constant but is determined by the combination of consisting coating layer thicknesses.

Hot Electron Effects of Importance for Micron and Submicron Devices.

DTIC Science & Technology

1981-09-01

pair injected into the active region. That g(E) tron energy loss (in units of LO phonons do modify laser action has been shown in the 4 ,) stevia ...and x,) far away from the silicon-silicon-dioxide inter- Evoluton of the size of electronic devices. (a) Original transistor patent of John Bardeen face

Tandem junction amorphous silicon solar cells

DOEpatents

Hanak, Joseph J.

1981-01-01

An amorphous silicon solar cell has an active body with two or a series of layers of hydrogenated amorphous silicon arranged in a tandem stacked configuration with one optical path and electrically interconnected by a tunnel junction. The layers of hydrogenated amorphous silicon arranged in tandem configuration can have the same bandgap or differing bandgaps.

Improved passivation effect in multicrystalline black silicon by chemical solution pre-treatment

NASA Astrophysics Data System (ADS)

Jiang, Ye; Shen, Honglie; Pu, Tian; Zheng, Chaofan

2018-04-01

Though black silicon has excellent anti-reflectance property, its passivation is one of the main technical bottlenecks due to its large specific surface area. In this paper, multicrystalline black silicon is fabricated by metal assisted chemical etching, and is rebuilt in low concentration alkali solution. Different solution pre-treatment is followed to make surface modification on black silicon before Al2O3 passivation by atomic layer deposition. HNO3 and H2SO4 + H2O2 solution pre-treatment makes the silicon surface become hydrophilic, with contact angle decrease from 117.28° to about 30°. It is demonstrated that when the pre-treatment solution is nitric acid, formed ultrathin SiO x layer between Al2O3 layer and black silicon is found to increase effective carrier lifetime to 72.64 µs, which is obviously higher than that of the unpassivated black silicon. The passivation stacks of SiO x /Al2O3 are proved to be effective double layers for nanoscaled multicrystalline silicon surface.

Use of anionic surfactants for selective polishing of silicon dioxide over silicon nitride films using colloidal silica-based slurries

NASA Astrophysics Data System (ADS)

Penta, Naresh K.; Amanapu, H. P.; Peethala, B. C.; Babu, S. V.

2013-10-01

Four different anionic surfactants, sodium dodecyl sulfate, dodecyl benzene sulfonic acid (DBSA), dodecyl phosphate and Sodium lauroyl sarcosine, selected from the sulfate, phosphate, and carboxylic family, were investigated as additives in silica dispersions for selective polishing of silicon dioxide over silicon nitride films. We found that all these anionic surfactants suppress the nitride removal rates (RR) for pH ≤4 while more or less maintaining the oxide RRs, resulting in high oxide-to-nitride RR selectivity. The RR data obtained as a function of pH were explained based on pH dependent distributions of surfactant species, change in the zeta potentials of oxide and nitride surfaces, and thermogravimetric data. It appears that the negatively charged surfactant species preferentially adsorb on the positively charged nitride surface below IEP through its electrostatic interactions and form a bilayer adsorption, resulting in the suppression of nitride RRs. In contrast to the surfactants, K2SO4 interacts only weakly with the nitride surface and hence cannot suppress its RR.

Ceramic with preferential oxygen reactive layer

NASA Technical Reports Server (NTRS)

Wang, Hongyu (Inventor); Luthra, Krishan Lal (Inventor)

2001-01-01

An article comprises a silicon-containing substrate and an external environmental/thermal barrier coating. The external environmental/thermal barrier coating is permeable to diffusion of an environmental oxidant and the silicon-containing substrate is oxidizable by reaction with oxidant to form at least one gaseous product. The article comprises an intermediate layer/coating between the silicon-containing substrate and the environmental/thermal barrier coating that is oxidizable to a nongaseous product by reaction with the oxidant in preference to reaction of the silicon-containing substrate with the oxidant. A method of forming an article, comprises forming a silicon-based substrate that is oxidizable by reaction with oxidant to at least one gaseous product and applying an intermediate layer/coating onto the substrate, wherein the intermediate layer/coating is oxidizable to a nongaseous product by reaction with the oxidant in preference to reaction of the silicon-containing substrate with the oxidant.

Advanced detectors and signal processing for bubble memories

NASA Technical Reports Server (NTRS)

Kryder, M. H.; Rasky, P. H. L.; Greve, D. W.

1985-01-01

The feasibility of combining silicon and magnetic bubble technologies is demonstrated. Results of bubble film annealing indicate that a low temperature silicon on garnet technology is the most likely one to succeed commercially. Annealing ambients are also shown to have a major effect on the magnetic properties of bubble films. Functional MOSFETs were fabricated on bubble films coated with thick (approximately 1 micron) SiO2 layers. The two main problems with these silicon on garnet MOSFETs are low electron mobilities and large gate leakage currents. Results indicate that the laser recrystallized silicon and gate oxide (SiO2) layers are contaminated. The data suggest that part of the contaminating ions originate in the sputtered oxide spacer layer and part originates in the bubble film itself. A diffusion barrier, such as silicon nitride, placed between the bubble film and the silicon layer should eliminate the contamination induced problem.

Sharpness and intensity modulation of the metal-insulator transition in ultrathin VO2 films by interfacial structure manipulation

NASA Astrophysics Data System (ADS)

McGee, Ryan; Goswami, Ankur; Pal, Soupitak; Schofield, Kalvin; Bukhari, Syed Asad Manzoor; Thundat, Thomas

2018-03-01

Vanadium dioxide (VO2) undergoes a structural transformation from monoclinic (insulator) to tetragonal (metallic) upon heating above 340 K, accompanied by abrupt changes to its electronic, optical, and mechanical properties. Not only is this transition scientifically intriguing, but there are also numerous applications in sensing, memory, and optoelectronics. Here we investigate the effect different substrates and the processing conditions have on the characteristics metal-insulator transition (MIT), and how the properties can be tuned for specific applications. VO2 thin films were grown on c -plane sapphire (0001) and p-type silicon <100 > by pulsed laser deposition. High-resolution x-ray diffraction along with transmission electron microscopy reveals textured epitaxial growth on sapphire by domain-matching epitaxy, while the presence of a native oxide layer on silicon prevented any preferential growth resulting in a polycrystalline film. An orientation relationship of <001 > (010)VO2||<11 ¯00 > (0001)Al 2O3 was established for VO2 grown on sapphire, while no such relationship was found for VO2 grown on silicon. Surface-energy minimization is the driving force behind grain growth, as the lowest energy VO2 plane grew on silicon, while on sapphire the desire for epitaxial growth was dominant. Polycrystallinity of films grown on silicon caused a weaker and less prominent MIT than observed on sapphire, whose MIT was higher in magnitude and steeper in slope. The position of the MIT was shown to depend on the competing effects of misfit strain and grain growth. Higher deposition temperatures caused an increase in the MIT, while compressive strain resulted in a decreased MIT.

Structurally controlled deposition of silicon onto nanowires

DOE Office of Scientific and Technical Information (OSTI.GOV)

Wang, Weijie; Liu, Zuqin; Han, Song

Provided herein are nanostructures for lithium ion battery electrodes and methods of fabrication. In some embodiments, a nanostructure template coated with a silicon coating is provided. The silicon coating may include a non-conformal, more porous layer and a conformal, denser layer on the non-conformal, more porous layer. In some embodiments, two different deposition processes, e.g., a PECVD layer to deposit the non-conformal layer and a thermal CVD process to deposit the conformal layer, are used. Anodes including the nanostructures have longer cycle lifetimes than anodes made using either a PECVD or thermal CVD method alone.

Spectroellipsometric detection of silicon substrate damage caused by radiofrequency sputtering of niobium oxide

NASA Astrophysics Data System (ADS)

Lohner, Tivadar; Serényi, Miklós; Szilágyi, Edit; Zolnai, Zsolt; Czigány, Zsolt; Khánh, Nguyen Quoc; Petrik, Péter; Fried, Miklós

2017-11-01

Substrate surface damage induced by deposition of metal atoms by radiofrequency (rf) sputtering or ion beam sputtering onto single-crystalline silicon (c-Si) surface has been characterized earlier by electrical measurements. The question arises whether it is possible to characterize surface damage using spectroscopic ellipsometry (SE). In our experiments niobium oxide layers were deposited by rf sputtering on c-Si substrates in gas mixture of oxygen and argon. Multiple angle of incidence spectroscopic ellipsometry measurements were performed, a four-layer optical model (surface roughness layer, niobium oxide layer, native silicon oxide layer and ion implantation-amorphized silicon [i-a-Si] layer on a c-Si substrate) was created in order to evaluate the spectra. The evaluations yielded thicknesses of several nm for the i-a-Si layer. Better agreement could be achieved between the measured and the generated spectra by inserting a mixed layer (with components of c-Si and i-a-Si applying the effective medium approximation) between the silicon oxide layer and the c-Si substrate. High depth resolution Rutherford backscattering (RBS) measurements were performed to investigate the interface disorder between the deposited niobium oxide layer and the c-Si substrate. Atomic resolution cross-sectional transmission electron microscopy investigation was applied to visualize the details of the damaged subsurface region of the substrate.

In situ spectroscopic ellipsometry study of low-temperature epitaxial silicon growth

NASA Astrophysics Data System (ADS)

Halagačka, L.; Foldyna, M.; Leal, R.; Roca i Cabarrocas, P.

2018-07-01

Low-temperature growth of doped epitaxial silicon layers is a promising way to reduce the cost of p-n junction formation in c-Si solar cells. In this work, we study process of highly doped epitaxial silicon layer growth using in situ spectroscopic ellipsometry. The film was deposited by plasma-enhanced chemical vapor deposition (PECVD) on a crystalline silicon substrate at a low substrate temperature of 200 °C. In the deposition process, SiF4 was used as a precursor, B2H6 as doping gas, and a hydrogen/argon mixture as carrier gas. A spectroscopic ellipsometer with a wide spectral range was used for in situ spectroscopic measurements. Since the temperature during process is 200 °C, the optical functions of silicon differ from these at room temperature and have to be adjusted. Thickness of the epitaxial silicon layer was fitted on in situ ellipsometric data. As a result we were able to determine the dynamics of epitaxial layer growth, namely initial layer formation time and epitaxial growth rate. This study opens new perspectives in understanding and monitoring the epitaxial silicon deposition processes as the model fitting can be applied directly during the growth.

Method for forming a glove attachment

NASA Technical Reports Server (NTRS)

Dawn, Frederic S. (Inventor); Guy, Walter W. (Inventor); Kosmo, Joseph (Inventor); Drennan, Arthur P. (Inventor); Tschirch, Richard P. (Inventor)

1995-01-01

An attachment principally for the palm of an astronaut glove to enhance the gripping area of the palm without detracting from the flexibility and utility of the glove is presented. The attachment is a composite construction formed from a layer of silicone rubber having an outer surface with a friction configuration and another layer of silicone rubber in which a Nomex Aramid mesh fabric is embedded prior to curing. The method of construction involves the use of a mold with a friction configuration surface. A first layer of silicone rubber or sealant is disposed in the mold and allowed to set for an hour. A second layer of silicone rubber or sealant is layered over the first layer and leveled. A Nomex Aramid mesh fabric is embedded into the second layer and the composite is permitted to cure. When cured, a configured area of the composite construction is glued or stitched to the palm area of the glove.

Oxidation resistant high temperature thermal cycling resistant coatings on silicon-based substrates and process for the production thereof

DOEpatents

Sarin, V.K.

1990-08-21

An oxidation resistant, high temperature thermal cycling resistant coated ceramic article for ceramic heat engine applications is disclosed. The substrate is a silicon-based material, i.e. a silicon nitride- or silicon carbide-based monolithic or composite material. The coating is a graded coating of at least two layers: an intermediate AlN or Al[sub x]N[sub y]O[sub z] layer and an aluminum oxide or zirconium oxide outer layer. The composition of the coating changes gradually from that of the substrate to that of the AlN or Al[sub x]N[sub y]O[sub z] layer and further to the composition of the aluminum oxide or zirconium oxide outer layer. Other layers may be deposited over the aluminum oxide layer. A CVD process for depositing the graded coating on the substrate is also disclosed.

Oxidation resistant high temperature thermal cycling resistant coatings on silicon-based substrates and process for the production thereof

DOEpatents

Sarin, Vinod K.

1990-01-01

An oxidation resistant, high temperature thermal cycling resistant coated ceramic article for ceramic heat engine applications. The substrate is a silicon-based material, i.e. a silicon nitride- or silicon carbide-based monolithic or composite material. The coating is a graded coating of at least two layers: an intermediate AlN or Al.sub.x N.sub.y O.sub.z layer and an aluminum oxide or zirconium oxide outer layer. The composition of the coating changes gradually from that of the substrate to that of the AlN or Al.sub.x N.sub.y O.sub.z layer and further to the composition of the aluminum oxide or zirconium oxide outer layer. Other layers may be deposited over the aluminum oxide layer. A CVD process for depositing the graded coating on the substrate is also disclosed.

Method for making circular tubular channels with two silicon wafers

DOEpatents

Yu, Conrad M.; Hui, Wing C.

1996-01-01

A two-wafer microcapillary structure is fabricated by depositing boron nitride (BN) or silicon nitride (Si.sub.3 N.sub.4) on two separate silicon wafers (e.g., crystal-plane silicon with [100] or [110] crystal orientation). Photolithography is used with a photoresist to create exposed areas in the deposition for plasma etching. A slit entry through to the silicon is created along the path desired for the ultimate microcapillary. Acetone is used to remove the photoresist. An isotropic etch, e.g., such as HF/HNO.sub.3 /CH.sub.3 COOH, then erodes away the silicon through the trench opening in the deposition layer. A channel with a half-circular cross section is then formed in the silicon along the line of the trench in the deposition layer. Wet etching is then used to remove the deposition layer. The two silicon wafers are aligned and then bonded together face-to-face to complete the microcapillary.

Superlattice doped layers for amorphous silicon photovoltaic cells

DOEpatents

Arya, Rajeewa R.

1988-01-12

Superlattice doped layers for amorphous silicon photovoltaic cells comprise a plurality of first and second lattices of amorphous silicon alternatingly formed on one another. Each of the first lattices has a first optical bandgap and each of the second lattices has a second optical bandgap different from the first optical bandgap. A method of fabricating the superlattice doped layers also is disclosed.

Asymmetric band offsets in silicon heterojunction solar cells: Impact on device performance

DOE Office of Scientific and Technical Information (OSTI.GOV)

Seif, Johannes Peter; Menda, Deneb; Descoeudres, Antoine

Here, amorphous/crystalline silicon interfaces feature considerably larger valence than conduction band offsets. In this article, we analyze the impact of such band offset asymmetry on the performance of silicon heterojunction solar cells. To this end, we use silicon suboxides as passivation layers -- inserted between substrate and (front or rear) contacts -- since such layers enable intentionally exacerbated band-offset asymmetry. Investigating all topologically possible passivation layer permutations and focussing on light and dark current-voltage characteristics, we confirm that to avoid fill factor losses, wider-bandgap silicon oxide films (of at least several nanometer thin) should be avoided in hole-collecting contacts. Asmore » a consequence, device implementation of such films as window layers -- without degraded carrier collection -- demands electron collection at the front and hole collection at the rear. Furthermore, at elevated operating temperatures, once possible carrier transport barriers are overcome by thermionic (field) emission, the device performance is mainly dictated by the passivation of its surfaces. In this context, compared to the standard amorphous silicon layers, the wide-bandgap oxide layers applied here passivate remarkably better at these temperatures, which may represent an additional benefit under practical operation conditions.« less

Asymmetric band offsets in silicon heterojunction solar cells: Impact on device performance

DOE PAGES

Seif, Johannes Peter; Menda, Deneb; Descoeudres, Antoine; ...

2016-08-01

Here, amorphous/crystalline silicon interfaces feature considerably larger valence than conduction band offsets. In this article, we analyze the impact of such band offset asymmetry on the performance of silicon heterojunction solar cells. To this end, we use silicon suboxides as passivation layers -- inserted between substrate and (front or rear) contacts -- since such layers enable intentionally exacerbated band-offset asymmetry. Investigating all topologically possible passivation layer permutations and focussing on light and dark current-voltage characteristics, we confirm that to avoid fill factor losses, wider-bandgap silicon oxide films (of at least several nanometer thin) should be avoided in hole-collecting contacts. Asmore » a consequence, device implementation of such films as window layers -- without degraded carrier collection -- demands electron collection at the front and hole collection at the rear. Furthermore, at elevated operating temperatures, once possible carrier transport barriers are overcome by thermionic (field) emission, the device performance is mainly dictated by the passivation of its surfaces. In this context, compared to the standard amorphous silicon layers, the wide-bandgap oxide layers applied here passivate remarkably better at these temperatures, which may represent an additional benefit under practical operation conditions.« less

Fabrication of heterojunction solar cells by improved tin oxide deposition on insulating layer

DOEpatents

Feng, Tom; Ghosh, Amal K.

1980-01-01

Highly efficient tin oxide-silicon heterojunction solar cells are prepared by heating a silicon substrate, having an insulating layer thereon, to provide a substrate temperature in the range of about 300.degree. C. to about 400.degree. C. and thereafter spraying the so-heated substrate with a solution of tin tetrachloride in a organic ester boiling below about 250.degree. C. Preferably the insulating layer is naturally grown silicon oxide layer.

Theoretical-Experimental Analysis of the Effects of Grain Boundaries on the Electrical Properties of SOI (Silicon-on-Insulator) MOSFETS.

DTIC Science & Technology

1983-11-01

work on recrystallization of polycrystalline silicon ( polysilicon ) films deposited on silicon-dioxide has demonstrated remarkable improvement in film...quality, and thus has identified another possibly viable 1SO technology for ICs. The polysilicon -on-S10 2 technology not only has the advantages alluded...and consequently higher areal device densities. Virtually all the research to date on polysilicon -on-SiO 2 has concentrated on the

Measurements of Carbon Dioxide, Methane, and Other Related Tracers at High Spatial and Temporal Resolution in an Urban Environment

NASA Astrophysics Data System (ADS)

Yasuhara, Scott; Forgeron, Jeff; Rella, Chris; Franz, Patrick; Jacobson, Gloria; Chiao, Sen; Saad, Nabil

2013-04-01

The ability to quantify sources and sinks of carbon dioxide and methane on the urban scale is essential for understanding the atmospheric drivers to global climate change. In the 'top-down' approach, overall carbon fluxes are determined by combining remote measurements of carbon dioxide concentrations with complex atmospheric transport models, and these emissions measurements are compared to 'bottom-up' predictions based on detailed inventories of the sources and sinks of carbon, both anthropogenic and biogenic in nature. This approach, which has proven to be effective at continental scales, becomes challenging to implement at urban scales, due to poorly understood atmospheric transport models and high variability of the emissions sources in space (e.g., factories, highways, green spaces) and time (rush hours, factory shifts and shutdowns, and diurnal and seasonal variation in residential energy use). New measurement and analysis techniques are required to make sense of the carbon dioxide signal in cities. Here we present detailed, high spatial- and temporal- resolution greenhouse gas measurements made by multiple Picarro-CRDS analyzers in Silicon Valley in California. Real-time carbon dioxide data from a 20-month period are combined with real-time carbon monoxide, methane, and acetylene to partition the observed carbon dioxide concentrations between different anthropogenic sectors (e.g., transport, residential) and biogenic sources. Real-time wind rose data are also combined with real-time methane data to help identify the direction of local emissions of methane. High resolution WRF models are also included to better understand the dynamics of the boundary layer. The ratio between carbon dioxide and carbon monoxide is shown to vary over more than a factor of two from season to season or even from day to night, indicating rapid but frequent shifts in the balance between different carbon dioxide sources. Additional information is given by acetylene, a fossil fuel combustion tracer that provides complimentary information to carbon monoxide. In spring and summer, the combined signal of the urban center and the surrounding biosphere and urban green space is explored. These methods show great promise for identifying, quantifying, and partitioning urban-ecological (carbon) emissions.

Characterization of Ag-porous silicon nanostructured layer formed by an electrochemical etching of p-type silicon surface for bio-application

NASA Astrophysics Data System (ADS)

Naddaf, M.; Al-Mariri, A.; Haj-Mhmoud, N.

2017-06-01

Nanostructured layers composed of silver-porous silicon (Ag-PS) have been formed by an electrochemical etching of p-type (1 1 1) silicon substrate in a AgNO3:HF:C2H5OH solution at different etching times (10 min-30 min). Scanning electron microscopy (SEM) and energy-dispersive x-ray spectroscopy (EDS) results reveal that the produced layers consist of Ag dendrites and a silicon-rich porous structure. The nanostructuring nature of the layer has been confirmed by spatial micro-Raman scattering and x-ray diffraction techniques. The Ag dendrites exhibit a surface-enhanced Raman scattering (SERS) spectrum, while the porous structure shows a typical PS Raman spectrum. Upon increasing the etching time, the average size of silicon nanocrystallite in the PS network decreases, while the average size of Ag nanocrystals is slightly affected. In addition, the immobilization of prokaryote Salmonella typhimurium DNA via physical adsorption onto the Ag-PS layer has been performed to demonstrate its efficiency as a platform for detection of biological molecules using SERS.

DNA translocation through graphene nanopores.

PubMed

Merchant, Christopher A; Healy, Ken; Wanunu, Meni; Ray, Vishva; Peterman, Neil; Bartel, John; Fischbein, Michael D; Venta, Kimberly; Luo, Zhengtang; Johnson, A T Charlie; Drndić, Marija

2010-08-11

We report on DNA translocations through nanopores created in graphene membranes. Devices consist of 1-5 nm thick graphene membranes with electron-beam sculpted nanopores from 5 to 10 nm in diameter. Due to the thin nature of the graphene membranes, we observe larger blocked currents than for traditional solid-state nanopores. However, ionic current noise levels are several orders of magnitude larger than those for silicon nitride nanopores. These fluctuations are reduced with the atomic-layer deposition of 5 nm of titanium dioxide over the device. Unlike traditional solid-state nanopore materials that are insulating, graphene is an excellent electrical conductor. Use of graphene as a membrane material opens the door to a new class of nanopore devices in which electronic sensing and control are performed directly at the pore.

Local residual stress monitoring of aluminum nitride MEMS using UV micro-Raman spectroscopy

DOE PAGES

Choi, Sukwon; Griffin, Benjamin A.

2016-01-06

Localized stress variation in aluminum nitride (AlN) sputtered on patterned metallization has been monitored through the use of UV micro-Raman spectroscopy. This technique utilizing 325 nm laser excitation allows detection of the AlN E2(high) phonon mode in the presence of metal electrodes beneath the AlN layer with a high spatial resolution of less than 400 nm. The AlN film stress shifted 400 MPa from regions where AlN was deposited over a bottom metal electrode versus silicon dioxide. Thus, across wafer stress variations were also investigated showing that wafer level stress metrology, for example using wafer curvature measurements, introduces large uncertaintiesmore » for predicting the impact of AlN residual stress on the device performance.« less

Special requirements for electronics to be used in robots in space

DOE Office of Scientific and Technical Information (OSTI.GOV)

Sias, F.R.

1994-12-31

Robots have been developed for use in hazardous environments and space certainly falls in the category of a hazardous environment. Microcomputers and electronics used to control robotic systems to be employed in space face greater threats than earth-bound robots used around radioactive materials. It is well known that nuclear radiation damages semiconductor devices by causing charges to build up in silicon dioxide insulating layers when the devices are exposed to ionizing radiation. Electronics suffer from doses of radiation when used around radioactive materials; however, additional sources of damage are present when the robots are used in space. This paper ismore » a review of the problems that must be considered when developing electronics for robots to be used in space and some of the available solutions.« less

Characterization and Modeling of Nano-organic Thin Film Phototransistors Based on 6,13(Triisopropylsilylethynyl)-Pentacene: Photovoltaic Effect

NASA Astrophysics Data System (ADS)

Jouili, A.; Mansouri, S.; Al-Ghamdi, Ahmed A.; El Mir, L.; Farooq, W. A.; Yakuphanoglu, F.

2017-04-01

Organic thin film transistors based on 6,13(triisopropylsilylethynyl)-pentacene (TIPS-pentacene) with various channel widths and thicknesses of the active layer (300 nm and 135 nm) were photo-characterized. The photoresponse behavior and the gate field dependence of the charge transport were analyzed in detail. The surface properties of TIPS-pentacene deposited on silicon dioxide substrate were investigated using an atomic force microscope. We confirm that the threshold voltage values of the TIPS-pentacene transistor depend on the intensity of white light illumination. With the multiple trapping and release model, we have developed an analytical model that was applied to reproduce the experimental output characteristics of organic thin film transistors based on TIPS-pentacene under dark and under light illumination.

Anomalous response of supported few-layer hexagonal boron nitride to DC electric fields: a confined water effect?

NASA Astrophysics Data System (ADS)

Oliveira, Camilla; Matos, Matheus; Mazzoni, Mário; Chacham, Hélio; Neves, Bernardo

2013-03-01

Hexagonal boron nitride (h-BN) is a two-dimensional compound from III-V family, with the atoms of boron and nitrogen arranged in a honeycomb lattice, similar to graphene. Unlike graphene though, h-BN is an insulator material, with a gap larger than 5 eV. Here, we use Electric Force Microscopy (EFM) to study the electrical response of mono and few-layers of h-BN to an electric field applied by the EFM tip. Our results show an anomalous behavior in the dielectric response for h-BN for different bias orientation: for a positive bias applied to the tip, h-BN layers respond with a larger dielectric constant than the dielectric constant of the silicon dioxide substrate; while for a negative bias, the h-BN dielectric constant is smaller than the dielectric constant of the substrate. Based on first-principles calculations, we showed that this anomalous response may be interpreted as a macroscopic consequence of confinement of a thin water layer between h-BN and substrate. These results were confirmed by sample annealing and also also by a comparative analysis with h-BN on a non-polar substrate. All the authors acknowledge financial support from CNPq, Fapemig, Rede Nacional de Pesquisa em Nanotubos de Carbono and INCT-Nano-Carbono.

Electrical characterization of amorphous Al2O3 dielectric films on n-type 4H-SiC

NASA Astrophysics Data System (ADS)

Khosa, R. Y.; Thorsteinsson, E. B.; Winters, M.; Rorsman, N.; Karhu, R.; Hassan, J.; Sveinbjörnsson, E. Ö.

2018-02-01

We report on the electrical properties of Al2O3 films grown on 4H-SiC by successive thermal oxidation of thin Al layers at low temperatures (200°C - 300°C). MOS capacitors made using these films contain lower density of interface traps, are more immune to electron injection and exhibit higher breakdown field (5MV/cm) than Al2O3 films grown by atomic layer deposition (ALD) or rapid thermal processing (RTP). Furthermore, the interface state density is significantly lower than in MOS capacitors with nitrided thermal silicon dioxide, grown in N2O, serving as the gate dielectric. Deposition of an additional SiO2 film on the top of the Al2O3 layer increases the breakdown voltage of the MOS capacitors while maintaining low density of interface traps. We examine the origin of negative charges frequently encountered in Al2O3 films grown on SiC and find that these charges consist of trapped electrons which can be released from the Al2O3 layer by depletion bias stress and ultraviolet light exposure. This electron trapping needs to be reduced if Al2O3 is to be used as a gate dielectric in SiC MOS technology.

Epitaxial pentacene films grown on the surface of ion-beam-processed gate dielectric layer

NASA Astrophysics Data System (ADS)

Chou, W. Y.; Kuo, C. W.; Cheng, H. L.; Mai, Y. S.; Tang, F. C.; Lin, S. T.; Yeh, C. Y.; Horng, J. B.; Chia, C. T.; Liao, C. C.; Shu, D. Y.

2006-06-01

The following research describes the process of fabrication of pentacene films with submicron thickness, deposited by thermal evaporation in high vacuum. The films were fabricated with the aforementioned conditions and their characteristics were analyzed using x-ray diffraction, scanning electron microscopy, polarized Raman spectroscopy, and photoluminescence. Organic thin-film transistors (OTFTs) were fabricated on an indium tin oxide coated glass substrate, using an active layer of ordered pentacene molecules, which were grown at room temperature. Pentacene film was aligned using the ion-beam aligned method, which is typically employed to align liquid crystals. Electrical measurements taken on a thin-film transistor indicated an increase in the saturation current by a factor of 15. Pentacene-based OTFTs with argon ion-beam-processed gate dielectric layers of silicon dioxide, in which the direction of the ion beam was perpendicular to the current flow, exhibited a mobility that was up to an order of magnitude greater than that of the controlled device without ion-beam process; current on/off ratios of approximately 106 were obtained. Polarized Raman spectroscopy investigation indicated that the surface of the gate dielectric layer, treated with argon ion beam, enhanced the intermolecular coupling of pentacene molecules. The study also proposes the explanation for the mechanism of carrier transportation in pentacene films.

Thermoelectric properties of nanostructured porous silicon

NASA Astrophysics Data System (ADS)

Martín-Palma, R. J.; Cabrera, H.; Martín-Adrados, B.; Korte, D.; Pérez-Cappe, E.; Mosqueda, Y.; Frutis, M. A.; Danguillecourt, E.

2018-01-01

In this work we report on the thermoelectric properties of nanostructured porous silicon (nanoPS) layers grown onto silicon substrates. More specifically, nanoPS layers of different porosity, nanocrystal size, and thickness were fabricated and their electrical conductivities, Seebeck coefficients, and thermal conductivities were subsequently measured. It was found that these parameters show a strong dependence on the characteristics of the nanoPS layers and thus can be controlled.

Biomedical bandpass filter for fluorescence microscopy imaging based on TiO2/SiO2 and TiO2/MgF2 dielectric multilayers

NASA Astrophysics Data System (ADS)

Butt, M. A.; Fomchenkov, S. A.; Ullah, A.; Verma, P.; Khonina, S. N.

2016-08-01

We report a design for creating a multilayer dielectric optical filters based on TiO2 and SiO2/MgF2 alternating layers. We have selected Titanium dioxide (TiO2) for high refractive index (2.5), Silicon dioxide (SiO2) and Magnesium fluoride (MgF2) as a low refractive index layer (1.45 & 1.37) respectively. Miniaturized visible spectrometers are useful for quick and mobile characterization of biological samples. Such devices can be fabricated by using Fabry-Perot (FP) filters consisting of two highly reflecting mirrors with a central cavity in between. Distributed Bragg Reflectors (DBRs) consisting of alternating high and low refractive index material pairs are the most commonly used mirrors in FP filters, due to their high reflectivity. However, DBRs have high reflectivity for a selected range of wavelengths known as the stopband of the DBR. This range is usually much smaller than the sensitivity range of the spectrometer range. Therefore a bandpass filters are required to restrict wavelength outside the stopband of the FP DBRs. The proposed filter shows a high quality with average transmission of 97.4% within the passbands and the transmission outside the passband is around 4%. Special attention has been given to keep the thickness of the filters within the economic limits. It can be suggested that these filters are exceptional choice for florescence imaging and Endoscope narrow band imaging.

Reflectance modeling of electrochemically P-type porosified silicon by Drude-Lorentz model

NASA Astrophysics Data System (ADS)

Kadi, M.; Media, E. M.; Gueddaoui, H.; Outemzabet, R.

2014-09-01

Porous silicon remains a promising material for optoelectronic application; in this field monitoring of the refractive index profile of the porous layer is required. We present in this work a procedure based on Drude-Lorentz model for calculating the optical parameters such as the high- and low-frequency dielectric constants, the plasma frequency by fitting the reflectance spectra. The experimental data of different porous silicon layer created above the bulk silicon material by electrochemical etching are extracted from reflectance measurements. The reflectance spectra are recorded in the spectral range 350-2500 nm. First, our computational procedure has been validated by its application on mono-crystalline silicon for the determination of its optical parameters. A good agreement between our results and those found in other works has been achieved in the visible-NIR range. In the second step, the model was applied to porous silicon (PS) layers. Useful optical parameters like the refractive index and the extinction coefficient, respectively, n (λ) and κ(λ), the band gap Eg, of different fabricated porous silicon layer are determined from simulated reflectance spectra. The correlation between the optical properties and the conditions of the electrochemical treatment was observed and analyzed. The main conclusion is that the reflected light from the porous silicon surface, although non-homogeneous and thus possessing the light scattering, is essentially smaller than the reflected light from the bulk crystalline silicon. These results show that the porous surface layer can act as an antireflection coating for silicon and could be used, in particular, in solar cells.

Resonance-mode electrochemical impedance measurements of silicon dioxide supported lipid bilayer formation and ion channel mediated charge transport.

PubMed

Lundgren, Anders; Hedlund, Julia; Andersson, Olof; Brändén, Magnus; Kunze, Angelika; Elwing, Hans; Höök, Fredrik

2011-10-15

A single-chip electrochemical method based on impedance measurements in resonance mode has been employed to study lipid monolayer and bilayer formation on hydrophobic alkanethiolate and SiO(2) substrates, respectively. The processes were monitored by temporally resolving changes in interfacial capacitance and resistance, revealing information about the rate of formation, coverage, and defect density (quality) of the layers at saturation. The resonance-based impedance measurements were shown to reveal significant differences in the layer formation process of bilayers made from (i) positively charged lipid 1-palmitoyl-2-oleoyl-sn-glycero-3-ethylphosphocholine (POEPC), (ii) neutral lipid 1-palmitoyl-2-oleoyl-sn-glycero-3-phosphocholine (POPC) on SiO(2), and (iii) monolayers made from POEPC on hydrophobic alkanethiolate substrates. The observed responses were represented with an equivalent circuit, suggesting that the differences primarily originate from the presence of a conductive aqueous layer between the lipid bilayers and the SiO(2). In addition, by adding the ion channel gramicidin D to bilayers supported on SiO(2), channel-mediated charge transport could be measured with high sensitivity (resolution around 1 pA). © 2011 American Chemical Society

Growth of a delta-doped silicon layer by molecular beam epitaxy on a charge-coupled device for reflection-limited ultraviolet quantum efficiency

NASA Technical Reports Server (NTRS)

Hoenk, Michael E.; Grunthaner, Paula J.; Grunthaner, Frank J.; Terhune, R. W.; Fattahi, Masoud; Tseng, Hsin-Fu

1992-01-01

Low-temperature silicon molecular beam epitaxy is used to grow a delta-doped silicon layer on a fully processed charge-coupled device (CCD). The measured quantum efficiency of the delta-doped backside-thinned CCD is in agreement with the reflection limit for light incident on the back surface in the spectral range of 260-600 nm. The 2.5 nm silicon layer, grown at 450 C, contained a boron delta-layer with surface density of about 2 x 10 exp 14/sq cm. Passivation of the surface was done by steam oxidation of a nominally undoped 1.5 nm Si cap layer. The UV quantum efficiency was found to be uniform and stable with respect to thermal cycling and illumination conditions.

Method for cleaning a solar cell surface opening made with a solar etch paste

DOEpatents

Rohatgi, Ajeet; Meemongkolkiat, Vichai

2010-06-22

A thin silicon solar cell having a back dielectric passivation and rear contact with local back surface field is described. Specifically, the solar cell may be fabricated from a crystalline silicon wafer having a thickness from 50 to 500 micrometers. A barrier layer and a dielectric layer are applied at least to the back surface of the silicon wafer to protect the silicon wafer from deformation when the rear contact is formed. At least one opening is made to the dielectric layer. An aluminum contact that provides a back surface field is formed in the opening and on the dielectric layer. The aluminum contact may be applied by screen printing an aluminum paste having from one to 12 atomic percent silicon and then applying a heat treatment at 750 degrees Celsius.

Method for formation of high quality back contact with screen-printed local back surface field

DOEpatents

Rohatgi, Ajeet; Meemongkolkiat, Vichai

2010-11-30

A thin silicon solar cell having a back dielectric passivation and rear contact with local back surface field is described. Specifically, the solar cell may be fabricated from a crystalline silicon wafer having a thickness from 50 to 500 micrometers. A barrier layer and a dielectric layer are applied at least to the back surface of the silicon wafer to protect the silicon wafer from deformation when the rear contact is formed. At least one opening is made to the dielectric layer. An aluminum contact that provides a back surface field is formed in the opening and on the dielectric layer. The aluminum contact may be applied by screen printing an aluminum paste having from one to 12 atomic percent silicon and then applying a heat treatment at 750 degrees Celsius.

Process to produce silicon carbide fibers using a controlled concentration of boron oxide vapor

NASA Technical Reports Server (NTRS)

Barnard, Thomas Duncan (Inventor); Lipowitz, Jonathan (Inventor); Nguyen, Kimmai Thi (Inventor)

2001-01-01

A process for producing polycrystalline silicon carbide by heating an amorphous ceramic fiber that contains silicon and carbon in an environment containing boron oxide vapor. The boron oxide vapor is produced in situ by the reaction of a boron containing material such as boron carbide and an oxidizing agent such as carbon dioxide, and the amount of boron oxide vapor can be controlled by varying the amount and rate of addition of the oxidizing agent.

Process to produce silicon carbide fibers using a controlled concentration of boron oxide vapor

NASA Technical Reports Server (NTRS)

Barnard, Thomas Duncan (Inventor); Lipowitz, Jonathan (Inventor); Nguyen, Kimmai Thi (Inventor)

2000-01-01

A process for producing polycrystalline silicon carbide includes heating an amorphous ceramic fiber that contains silicon and carbon in an environment containing boron oxide vapor. The boron oxide vapor is produced in situ by the reaction of a boron containing material such as boron carbide and an oxidizing agent such as carbon dioxide, and the amount of boron oxide vapor can be controlled by varying the amount and rate of addition of the oxidizing agent.

Nanoporous Silicon Combustion: Observation of Shock Wave and Flame Synthesis of Nanoparticle Silica.

PubMed

Becker, Collin R; Gillen, Greg J; Staymates, Matthew E; Stoldt, Conrad R

2015-11-18

The persistent hydrogen termination present in nanoporous silicon (nPS) is unique compared to other forms of nanoscale silicon (Si) which typically readily form a silicon dioxide passivation layer. The hydrogen terminated surface combined with the extremely high surface area of nPS yields a material capable of powerful exothermic reactions when combined with strong oxidizers. Here, a galvanic etching mechanism is used to produce nPS both in bulk Si wafers as well as in patterned regions of Si wafers with microfabricated ignition wires. An explosive composite is generated by filling the pores with sodium perchlorate (NaClO4). Using high-speed video including Schlieren photography, a shock wave is observed to propagate through air at 1127 ± 116 m/s. Additionally, a fireball is observed above the region of nPS combustion which persists for nearly 3× as long when reacted in air compared to N2, indicating that highly reactive species are generated that can further combust with excess oxygen. Finally, reaction products from either nPS-NaClO4 composites or nPS alone combusted with only high pressure O2 (400 psig) gas as an oxidizer are captured in a calorimeter bomb. The products in both cases are similar and verified by transmission electron microscopy (TEM) to include nano- to micrometer scale SiOx particles. This work highlights the complex oxidation mechanism of nPS composites and demonstrates the ability to use a solid state reaction to create a secondary gas phase combustion.

Ultra-narrow-linewidth erbium-doped lasers on a silicon photonics platform

NASA Astrophysics Data System (ADS)

Li, Nanxi; Purnawirman, Purnawirman; Magden, E. Salih; Singh, Gurpreet; Singh, Neetesh; Baldycheva, Anna; Hosseini, Ehsan S.; Sun, Jie; Moresco, Michele; Adam, Thomas N.; Leake, Gerald; Coolbaugh, Douglas; Bradley, Jonathan D. B.; Watts, Michael R.

2018-02-01

We report ultra-narrow-linewidth erbium-doped aluminum oxide (Al2O3:Er3+) distributed feedback (DFB) lasers with a wavelength-insensitive silicon-compatible waveguide design. The waveguide consists of five silicon nitride (SiNx) segments buried under silicon dioxide (SiO2) with a layer Al2O3:Er3+ deposited on top. This design has a high confinement factor (> 85%) and a near perfect (> 98%) intensity overlap for an octave-spanning range across near infrared wavelengths (950-2000 nm). We compare the performance of DFB lasers in discrete quarter phase shifted (QPS) cavity and distributed phase shifted (DPS) cavity. Using QPS-DFB configuration, we obtain maximum output powers of 0.41 mW, 0.76 mW, and 0.47 mW at widely spaced wavelengths within both the C and L bands of the erbium gain spectrum (1536 nm, 1566 nm, and 1596 nm). In a DPS cavity, we achieve an order of magnitude improvement in maximum output power (5.43 mW) and a side mode suppression ratio (SMSR) of > 59.4 dB at an emission wavelength of 1565 nm. We observe an ultra-narrow linewidth of ΔνDPS = 5.3 +/- 0.3 kHz for the DPS-DFB laser, as compared to ΔγQPS = 30.4 +/- 1.1 kHz for the QPS-DFB laser, measured by a recirculating self-heterodyne delayed interferometer (RSHDI). Even narrower linewidth can be achieved by mechanical stabilization of the setup, increasing the pump absorption efficiency, increasing the output power, or enhancing the cavity Q.

Transmissive metallic contact for amorphous silicon solar cells

DOEpatents

Madan, A.

1984-11-29

A transmissive metallic contact for amorphous silicon semiconductors includes a thin layer of metal, such as aluminum or other low work function metal, coated on the amorphous silicon with an antireflective layer coated on the metal. A transparent substrate, such as glass, is positioned on the light reflective layer. The metallic layer is preferably thin enough to transmit at least 50% of light incident thereon, yet thick enough to conduct electricity. The antireflection layer is preferably a transparent material that has a refractive index in the range of 1.8 to 2.2 and is approximately 550A to 600A thick.

Porous Silicon as Antireflecting Layer

NASA Astrophysics Data System (ADS)

Kosoglu, Gulsen; Yumak, Mehmet; Okmen, Selim; Ozatay, Ozhan; Skarlatos, Yani; Garcia, Carlos

2013-03-01

The main aim in photovoltaic industry is to produce efficient and energy competitive solar cell modules at low cost. Efficient AntiReflection Coatings (ARC) improve light collection and thereby increase the current output of solar cells. Broadband ARCs are desirable for efficient application over the entire solar spectrum and porous silicon layers as antireflective coating layers provide successful light collection. In the study the most critical physical parameters of porous silicon are examined, homogeneous and uniform porous layers are produced. The photoluminescence spectrum and optical parameters of porous layers have been investigated, and we are now in the process of improving the efficiency of the device by modulating the structure of the porous silicon layers and studying its photovoltaic characteristics. We would like to thank to Mr. Aziz U. Caliskan and his group for their valuable support from TUBITAK YITAL. This Project is supported by Bogazici University Research Funding: 5782, TUBITAK Grant : 209T099, and Bogazici University Infrared Funding: 6121.

Enhanced optical output power of InGaN/GaN light-emitting diodes grown on a silicon (111) substrate with a nanoporous GaN layer.

PubMed

Lee, Kwang Jae; Chun, Jaeyi; Kim, Sang-Jo; Oh, Semi; Ha, Chang-Soo; Park, Jung-Won; Lee, Seung-Jae; Song, Jae-Chul; Baek, Jong Hyeob; Park, Seong-Ju

2016-03-07

We report the growth of InGaN/GaN multiple quantum wells blue light-emitting diodes (LEDs) on a silicon (111) substrate with an embedded nanoporous (NP) GaN layer. The NP GaN layer is fabricated by electrochemical etching of n-type GaN on the silicon substrate. The crystalline quality of crack-free GaN grown on the NP GaN layer is remarkably improved and the residual tensile stress is also decreased. The optical output power is increased by 120% at an injection current of 20 mA compared with that of conventional LEDs without a NP GaN layer. The large enhancement of optical output power is attributed to the reduction of threading dislocation, effective scattering of light in the LED, and the suppression of light propagation into the silicon substrate by the NP GaN layer.

Improved Starting Materials for Back-Illuminated Imagers

NASA Technical Reports Server (NTRS)

Pain, Bedabrata

2009-01-01

An improved type of starting materials for the fabrication of silicon-based imaging integrated circuits that include back-illuminated photodetectors has been conceived, and a process for making these starting materials is undergoing development. These materials are intended to enable reductions in dark currents and increases in quantum efficiencies, relative to those of comparable imagers made from prior silicon-on-insulator (SOI) starting materials. Some background information is prerequisite to a meaningful description of the improved starting materials and process. A prior SOI starting material, depicted in the upper part the figure, includes: a) A device layer on the front side, typically between 2 and 20 m thick, made of p-doped silicon (that is, silicon lightly doped with an electron acceptor, which is typically boron); b) A buried oxide (BOX) layer (that is, a buried layer of oxidized silicon) between 0.2 and 0.5 m thick; and c) A silicon handle layer (also known as a handle wafer) on the back side, between about 600 and 650 m thick. After fabrication of the imager circuitry in and on the device layer, the handle wafer is etched away, the BOX layer acting as an etch stop. In subsequent operation of the imager, light enters from the back, through the BOX layer. The advantages of back illumination over front illumination have been discussed in prior NASA Tech Briefs articles.

Location-Control of Large Si Grains by Dual-Beam Excimer-Laser and Thick Oxide Portion

NASA Astrophysics Data System (ADS)

Ishihara, Ryoichi; Burtsev, Artyom; Alkemade, Paul F. A.

2000-07-01

An array of large Si grains was placed at a predetermined position by dual excimer-laser irradiation of a multi-layer structure of silicon (Si), silicon dioxide (SiO2) with an array of bumps and metal on a glass substrate. We have investigated the effects of irradiating energy density and the topology of the structure on the grain size and crystallographic structure by scanning electron microscopy (SEM) and electron back-scattering pattern (EBSP) analysis. In the low-energy-density regime, numerous small grains and petal shaped grains formed on top of the SiO2 bumps. The number of small grains on the bumps decreased with increasing irradiating energy density. At sufficiently high energy densities, one single Si grain as large as 3.5 μm was positioned at the center of the bumps. Although most of the area of the large Si grain has a single crystallographic orientation, twins and low-angle grain boundaries are often formed at the periphery of the grain. There was no preferred crystallographic orientation in the center of the location-controlled Si grain. Numerical analysis of the temperature profile showed that a temperature drop occurs at the center of the bump, during and immediately after laser irradiation. The diameter of the location-controlled Si grain increased with total thickness of the intermediate SiO2 layer, and took the maximum value of 6.2 μm.

Optimization and characterization of biomolecule immobilization on silicon substrates using (3-aminopropyl)triethoxysilane (APTES) and glutaraldehyde linker

NASA Astrophysics Data System (ADS)

Gunda, Naga Siva Kumar; Singh, Minashree; Norman, Lana; Kaur, Kamaljit; Mitra, Sushanta K.

2014-06-01

In the present work, we developed and optimized a technique to produce a thin, stable silane layer on silicon substrate in a controlled environment using (3-aminopropyl)triethoxysilane (APTES). The effect of APTES concentration and silanization time on the formation of silane layer is studied using spectroscopic ellipsometry and Fourier transform infrared spectroscopy (FTIR). Biomolecules of interest are immobilized on optimized silane layer formed silicon substrates using glutaraldehyde linker. Surface analytical techniques such as ellipsometry, FTIR, contact angle measurement system, and atomic force microscopy are employed to characterize the bio-chemically modified silicon surfaces at each step of the biomolecule immobilization process. It is observed that a uniform, homogenous and highly dense layer of biomolecules are immobilized with optimized silane layer on the silicon substrate. The developed immobilization method is successfully implemented on different silicon substrates (flat and pillar). Also, different types of biomolecules such as anti-human IgG (rabbit monoclonal to human IgG), Listeria monocytogenes, myoglobin and dengue capture antibodies were successfully immobilized. Further, standard sandwich immunoassay (antibody-antigen-antibody) is employed on respective capture antibody coated silicon substrates. Fluorescence microscopy is used to detect the respective FITC tagged detection antibodies bound to the surface after immunoassay.

Graphene synthesized on porous silicon for active electrode material of supercapacitors

NASA Astrophysics Data System (ADS)

Su, B. B.; Chen, X. Y.; Halvorsen, E.

2016-11-01

We present graphene synthesized by chemical vapour deposition under atmospheric pressure on both porous nanostructures and flat wafers as electrode scaffolds for supercapacitors. A 3nm thin gold layer was deposited on samples of both porous and flat silicon for exploring the catalytic influence during graphene synthesis. Micro-four-point probe resistivity measurements revealed that the resistivity of porous silicon samples was nearly 53 times smaller than of the flat silicon ones when all the samples were covered by a thin gold layer after the graphene growth. From cyclic voltammetry, the average specific capacitance of porous silicon coated with gold was estimated to 267 μF/cm2 while that without catalyst layer was 145μF/cm2. We demonstrated that porous silicon based on nanorods can play an important role in graphene synthesis and enable silicon as promising electrodes for supercapacitors.

Porous siliconformation and etching process for use in silicon micromachining

DOEpatents

Guilinger, Terry R.; Kelly, Michael J.; Martin, Jr., Samuel B.; Stevenson, Joel O.; Tsao, Sylvia S.

1991-01-01

A reproducible process for uniformly etching silicon from a series of micromechanical structures used in electrical devices and the like includes providing a micromechanical structure having a silicon layer with defined areas for removal thereon and an electrochemical cell containing an aqueous hydrofluoric acid electrolyte. The micromechanical structure is submerged in the electrochemical cell and the defined areas of the silicon layer thereon are anodically biased by passing a current through the electrochemical cell for a time period sufficient to cause the defined areas of the silicon layer to become porous. The formation of the depth of the porous silicon is regulated by controlling the amount of current passing through the electrochemical cell. The micromechanical structure is then removed from the electrochemical cell and submerged in a hydroxide solution to remove the porous silicon. The process is subsequently repeated for each of the series of micromechanical structures to achieve a reproducibility better than 0.3%.

SOI-silicon as structural layer for NEMS applications

NASA Astrophysics Data System (ADS)

Villarroya, Maria; Figueras, Eduard; Perez-Murano, Francesc; Campabadal, Francesca; Esteve, Jaume; Barniol, Nuria

2003-04-01

The objective of this paper is to present the compatibilization between a standard CMOS on bulk silicon process and the fabrication of nanoelectromechanical systems using Silicon On Insulator (SOI) wafers as substrate. This compatibilization is required as first step to fabricate a very high sensitive mass sensor based on a resonant cantilever with nanometer dimensions using the crystal silicon COI layer as the structural layer. The cantilever is driven electrostatically to its resonance frequency by an electrode placed parallel to the cantilever. A capacitive readout is performed. To achieve very high resolution, very small dimensions of the cantilever (nanometer range) are needed. For this reason, the control and excitation circuitry has to be integrated on the same substrate than the cantilever. Prior to the development of this sensor, it is necessary to develop a substrate able to be used first to integrate a standard CMOS circuit and afterwards to fabricate the nano-resonator. Starting from a SOI wafer and using very simple processes, the SOI silicon layer is removed, except from the areas in which nano-structures will be fabricated; obtaining a silicon substrate with islands with a SOI structure. The CMOS circuitry will be integrated on the bulk silicon region, while the remainder SOI region will be used for the nanoresonator. The silicon oxide of this SOI region is used as insulator; and as sacrificial layer, etched to release the cantilever from the substrate. To assure the cover of the different CMOS layers over the step of the islands, it is essential to avoid very sharp steps.

Method for making circular tubular channels with two silicon wafers

DOEpatents

Yu, C.M.; Hui, W.C.

1996-11-19

A two-wafer microcapillary structure is fabricated by depositing boron nitride (BN) or silicon nitride (Si{sub 3}N{sub 4}) on two separate silicon wafers (e.g., crystal-plane silicon with [100] or [110] crystal orientation). Photolithography is used with a photoresist to create exposed areas in the deposition for plasma etching. A slit entry through to the silicon is created along the path desired for the ultimate microcapillary. Acetone is used to remove the photoresist. An isotropic etch, e.g., such as HF/HNO{sub 3}/CH{sub 3}COOH, then erodes away the silicon through the trench opening in the deposition layer. A channel with a half-circular cross section is then formed in the silicon along the line of the trench in the deposition layer. Wet etching is then used to remove the deposition layer. The two silicon wafers are aligned and then bonded together face-to-face to complete the microcapillary. 11 figs.

Amorphous silicon solar cell allowing infrared transmission

DOEpatents

Carlson, David E.

1979-01-01

An amorphous silicon solar cell with a layer of high index of refraction material or a series of layers having high and low indices of refraction material deposited upon a transparent substrate to reflect light of energies greater than the bandgap energy of the amorphous silicon back into the solar cell and transmit solar radiation having an energy less than the bandgap energy of the amorphous silicon.

Semiconductor-metal phase transition of vanadium dioxide nanostructures on silicon substrate: Applications for thermal control of spacecraft

DOE Office of Scientific and Technical Information (OSTI.GOV)

Leahu, G. L., E-mail: roberto.livoti@uniroma1.it; Li Voti, R., E-mail: roberto.livoti@uniroma1.it; Larciprete, M. C., E-mail: roberto.livoti@uniroma1.it

2014-06-19

We present a detailed infrared study of the semiconductor-to-metal transition (SMT) in a vanadium dioxide (VO2) film deposited on silicon wafer. The VO2 phase transition is studied in the mid-infrared (MIR) region by analyzing the transmittance and the reflectance measurements, and the calculated emissivity. The temperature behaviour of the emissivity during the SMT put into evidence the phenomenon of the anomalous absorption in VO2 which has been explained by applying the Maxwell Garnett effective medium approximation theory, together with a strong hysteresis phenomenon, both useful to design tunable thermal devices to be applied for the thermal control of spacecraft. Wemore » have also applied the photothermal radiometry in order to study the changes in the modulated emissivity induced by laser. Experimental results show how the use of these techniques represent a good tool for a quantitative measurement of the optothermal properties of vanadium dioxide based structures.« less

Semiconductor to Metal Transition Characteristics of VO2/NiO Epitaxial Heterostructures Integrated with Si(100)

NASA Astrophysics Data System (ADS)

Molaei, Roya

The novel functionalities of Vanadium dioxide (VO2), such as, several orders of magnitude transition in resistivity and IR transmittance, provide the exciting opportunity for the development of next generation memory, sensor, and field-effect based devices. A critical issue in the development of practical devices based on metal oxides is the integration of high quality epitaxial oxide thin films with the existing silicon technology which is based on silicon (100) substrates. However, silicon is not suitable for epitaxial growth of oxides owing to its tendency to readily form an amorphous oxide layer or silicide at the film-substrate interface. The oxide films deposited directly on silicon exhibit poor crystallinity and are not suitable for device applications. To overcome this challenge, appropriate substrate templates must be developed for the growth of oxide thin films on silicon substrates. The primary objective of this dissertation was to develop an integration methodology of VO2 with Si (100) substrates so they could be used in "smart" sensor type of devices along with other multifunctional devices on the same silicon chip. This was achieved by using a NiO/c- YSZ template layer deposited in situ. It will be shown that if the deposition conditions are controlled properly. This approach was used to integrate VO 2 thin films with Si (100) substrates using pulsed laser deposition (PLD) technique. The deposition methodology of integrating VO2 thin films on silicon using various other template layers will also be discussed. Detailed epitaxial relationship of NiO/c-YSZ/Si(100) heterostructures as a template to growth of VO2 as well as were studied. We also were able to create a p-n junction within a single NiO epilayer through subsequent nanosecond laser annealing, as well as established a structure-property correlation in NiO/c-YSZ/Si(100) thin film epitaxial heterostructures with especial emphasis on the stoichiometry and crystallographic characteristics. NiO/c-YSZ/Si(100) heterostructures were used as template to grow fully relaxed VO2 thin films. The detailed x-ray diffraction, transmission electron microscopy (TEM), electrical characterization results for the deposited films will be presented. In the framework on domain matching epitaxy, epitaxial growth of VO2 (tetragonal crystal structure at growth temperature) on NiO has been explained. Our detailed phi-scan X-ray diffraction measurements corroborate our understanding of the epitaxial growth and in-plane atomic arrangements at the interface. It was observed that the transition characteristics (sharpness, over which electrical property changes are completed, amplitude, transition temperature, and hysteresis) are a strong function of microstructure, strain, and stoichiometry. We have shown that by the choosing the right template layer, strain in the VO2 thin films can be fully relaxed and near-bulk VO2 transition temperatures can be achieved. Finally, I will present my research work on modification of semiconductor-to-metal transition characteristics and effect on room temperature magnetic properties of VO2 thin films upon laser annealing. While the microstructure (epitaxy, crystalline quality etc.) and phase were preserved, we envisage these changes to occur as a result of introduction of oxygen vacancies upon laser treatment.

Fabrication et caracterisation de cristaux photoniques pour exaltation de fluorescence

NASA Astrophysics Data System (ADS)

Gascon, Annabelle

2011-12-01

In today's world, there is a pressing need for point-of-care molecular analysis that is fast, inexpensive and transportable. Lab-on-a- chips are designed to fulfill that need. They are micro-electromechanical systems (MEMS), fabricated with microelectronic techniques, that use the analytes physical properties to detect their presence in liquid samples. This detection can be performed by attaching the analyte to quantum dots. These quantum dots are semiconducting nanoparticles with narrow fluorescence band. In our project, we use a tuneable system with a two-slab photonic crystal that serves as a tuneable optical filter, detecting the presence and wavelength of these quantum dots. Photonic crystals are dielectrics with a variable refractive index, with a period near the visible light wavelength. They are called photonic crystals because they have a photonic band gap just as atomic crystals, periodic structure of atoms, have an electronic band gap. They are photonic because photons instead of electrons propagate through them. They can also enhance fluorescence from quantum dots at the photonic crystals guided resonance wavelength. My project objectives are to: (1) Fabricate two-slab photonic crystal, (2) Characterize photonic crystals, (3) Place quantum dots on photonic crystals, (4) Measure fluorescence enhancement. The device made during this project consists of a silicon wafer on which were deposited a 200 nm silicon nitride layer, then a 200 nm silicon dioxide layer and finally another 200 nm silicon nitride layer. An electron-beam lithography defines the photonic crystals and the MEMS. The photonic crystals are square lattices of holes 180 nm in diameter, at a period of 460 nm, etched through the two silicon nitride slabs. The two slabs are etched in a single step of Reactive Ion Etching (RIE). Then, the silicon under the photonic crystal is etched from the backside up to the nitride by deep-RIE. Finally, the oxide layer is removed in order to completely suspend the two-slab photonic crystal. The M EMS can change the gap between the two slabs in order to tune the guided resonance wavelength. An optical set-up is used to trace the photonic crystals transmission and reflection spectrum, in order to know the guided resonance position. A supercontinuum source illuminates the device at a normal incidence angle for wavelength between 400 nm and 800 nm. High-resolution spectra are obtained with a CCD camera spectrometer. Different types of one-slab photonic crystals are analyzed with this approach: we observe guided resonance peaks near 550 nm, 615 nm and 700 nm. Finally, a quantum dots microdrop is placed on the photonic crystal. The quantum dots emission wavelength matches with the photonic crystal guided resonance. A hyperspectral fluorescence microscope excites quantum dots between 436 nm and 483 nm, detects emission greater than 500 nm and plots a fluorescence wavelength spectrum. This set-up measures and compares the fluorescence of the quantum dots placed on and next to the photonic crystals. Our results show that the fluorescence is 30 times higher on the photonic crystals, but the fluorescence wavelength corresponds neither to the quantum dots emission nor to the photonic crystal guided resonance. In conclusion, this master thesis project demonstrates that it is possible to fabricate two-slab photonic crystals in silicon nitride and to plot their transmission and reflection spectra in order to find their guided resonance position. A fluorescence enhancement is visible, but at a different wavelength than of the quantum dots.

Plasma-deposited fluoropolymer film mask for local porous silicon formation

PubMed Central

2012-01-01

The study of an innovative fluoropolymer masking layer for silicon anodization is proposed. Due to its high chemical resistance to hydrofluoric acid even under anodic bias, this thin film deposited by plasma has allowed the formation of deep porous silicon regions patterned on the silicon wafer. Unlike most of other masks, fluoropolymer removal after electrochemical etching is rapid and does not alter the porous layer. Local porous regions were thus fabricated both in p+-type and low-doped n-type silicon substrates. PMID:22734507

Purification of silicon powder by the formation of thin porous layer followed byphoto-thermal annealing.

PubMed

Khalifa, Marouan; Hajji, Messaoud; Ezzaouia, Hatem

2012-08-08

Porous silicon has been prepared using a vapor-etching based technique on a commercial silicon powder. Strong visible emission was observed in all samples. Obtained silicon powder with a thin porous layer at the surface was subjected to a photo-thermal annealing at different temperatures under oxygen atmosphere followed by a chemical treatment. Inductively coupled plasma atomic emission spectrometry results indicate that silicon purity is improved from 99.1% to 99.994% after annealing at 900°C.

Purification of silicon powder by the formation of thin porous layer followed byphoto-thermal annealing

PubMed Central

2012-01-01

Porous silicon has been prepared using a vapor-etching based technique on a commercial silicon powder. Strong visible emission was observed in all samples. Obtained silicon powder with a thin porous layer at the surface was subjected to a photo-thermal annealing at different temperatures under oxygen atmosphere followed by a chemical treatment. Inductively coupled plasma atomic emission spectrometry results indicate that silicon purity is improved from 99.1% to 99.994% after annealing at 900°C. PMID:22873706

Passivation coating for flexible substrate mirrors

DOEpatents

Tracy, C. Edwin; Benson, David K.

1990-01-01

A protective diffusion barrier for metalized mirror structures is provided by a layer or coating of silicon nitride which is a very dense, transparent, dielectric material that is impervious to water, alkali, and other impurities and corrosive substances that typically attack the metal layers of mirrors and cause degradation of the mirrors' reflectivity. The silicon nitride layer can be deposited on the substrate before metal deposition thereon to stabilize the metal/substrate interface, and it can be deposited over the metal to encapsulate it and protect the metal from corrosion or other degradation. Mirrors coated with silicon nitride according to this invention can also be used as front surface mirrors. Also, the silver or other reflective metal layer on mirrors comprising thin, lightweight, flexible substrates of metal or polymer sheets coated with glassy layers can be protected with silicon nitride according to this invention.

Electrodeposition of platinum and silver into chemically modified microporous silicon electrodes

PubMed Central

2012-01-01

Electrodeposition of platinum and silver into hydrophobic and hydrophilic microporous silicon layers was investigated using chemically modified microporous silicon electrodes. Hydrophobic microporous silicon enhanced the electrodeposition of platinum in the porous layer. Meanwhile, hydrophilic one showed that platinum was hardly deposited within the porous layer, and a film of platinum on the top of the porous layer was observed. On the other hand, the electrodeposition of silver showed similar deposition behavior between these two chemically modified electrodes. It was also found that the electrodeposition of silver started at the pore opening and grew toward the pore bottom, while a uniform deposition from the pore bottom was observed in platinum electrodeposition. These electrodeposition behaviors are explained on the basis of the both effects, the difference in overpotential for metal deposition on silicon and on the deposited metal, and displacement deposition rate of metal. PMID:22720690

Antifuse with a single silicon-rich silicon nitride insulating layer

DOEpatents

Habermehl, Scott D.; Apodaca, Roger T.

2013-01-22

An antifuse is disclosed which has an electrically-insulating region sandwiched between two electrodes. The electrically-insulating region has a single layer of a non-hydrogenated silicon-rich (i.e. non-stoichiometric) silicon nitride SiN.sub.X with a nitrogen content X which is generally in the range of 0

Optical, electrical and dielectric properties of TiO2-SiO2 films prepared by a cost effective sol-gel process.

PubMed

Vishwas, M; Rao, K Narasimha; Gowda, K V Arjuna; Chakradhar, R P S

2011-12-01

Titanium dioxide (TiO(2)) and silicon dioxide (SiO(2)) thin films and their mixed films were synthesized by the sol-gel spin coating method using titanium tetra isopropoxide (TTIP) and tetra ethyl ortho silicate (TEOS) as the precursor materials for TiO(2) and SiO(2) respectively. The pure and composite films of TiO(2) and SiO(2) were deposited on glass and silicon substrates. The optical properties were studied for different compositions of TiO(2) and SiO(2) sols and the refractive index and optical band gap energies were estimated. MOS capacitors were fabricated using TiO(2) films on p-silicon (100) substrates. The current-voltage (I-V) and capacitance-voltage (C-V) characteristics were studied and the electrical resistivity and dielectric constant were estimated for the films annealed at 200°C for their possible use in optoelectronic applications. Copyright © 2011 Elsevier B.V. All rights reserved.

Laser welding of fused quartz

DOEpatents

Piltch, Martin S.; Carpenter, Robert W.; Archer, III, McIlwaine

2003-06-10

Refractory materials, such as fused quartz plates and rods are welded using a heat source, such as a high power continuous wave carbon dioxide laser. The radiation is optimized through a process of varying the power, the focus, and the feed rates of the laser such that full penetration welds may be accomplished. The process of optimization varies the characteristic wavelengths of the laser until the radiation is almost completely absorbed by the refractory material, thereby leading to a very rapid heating of the material to the melting point. This optimization naturally occurs when a carbon dioxide laser is used to weld quartz. As such this method of quartz welding creates a minimum sized heat-affected zone. Furthermore, the welding apparatus and process requires a ventilation system to carry away the silicon oxides that are produced during the welding process to avoid the deposition of the silicon oxides on the surface of the quartz plates or the contamination of the welds with the silicon oxides.

Oxygen-aided synthesis of polycrystalline graphene on silicon dioxide substrates.

PubMed

Chen, Jianyi; Wen, Yugeng; Guo, Yunlong; Wu, Bin; Huang, Liping; Xue, Yunzhou; Geng, Dechao; Wang, Dong; Yu, Gui; Liu, Yunqi

2011-11-09

We report the metal-catalyst-free synthesis of high-quality polycrystalline graphene on dielectric substrates [silicon dioxide (SiO(2)) or quartz] using an oxygen-aided chemical vapor deposition (CVD) process. The growth was carried out using a CVD system at atmospheric pressure. After high-temperature activation of the growth substrates in air, high-quality polycrystalline graphene is subsequently grown on SiO(2) by utilizing the oxygen-based nucleation sites. The growth mechanism is analogous to that of growth for single-walled carbon nanotubes. Graphene-modified SiO(2) substrates can be directly used in transparent conducting films and field-effect devices. The carrier mobilities are about 531 cm(2) V(-1) s(-1) in air and 472 cm(2) V(-1) s(-1) in N(2), which are close to that of metal-catalyzed polycrystalline graphene. The method avoids the need for either a metal catalyst or a complicated and skilled postgrowth transfer process and is compatible with current silicon processing techniques.

Low temperature electrodeposition of silicon layers

NASA Astrophysics Data System (ADS)

Pauporté, Thierry; Qi, Shuo; Viana, Bruno

2018-02-01

The electrodeposition of silicon at room temperature in 1-Butyl-1-methylpyrrolidinium bis(trifluoromethanesulfonyl)imide and N-Propyl-N-methylpyrrolidinium bis(trifluoromethanesulfonyl)imide ionic liquids containing SiCl4 salt is shown. The electrodeposition window has been determined by cyclic voltammetry. Layers have been deposited in a three electrode cell placed in an inert atmosphere and at constant applied potential. The characterizations by x-ray diffraction and Raman spectroscopy showed the formation of a layer made of amorphous silicon. The scanning electron microscopy examination revealed that the layers were featureless and well-covering.

The silane depletion fraction as an indicator for the amorphous/crystalline silicon interface passivation quality

NASA Astrophysics Data System (ADS)

Descoeudres, A.; Barraud, L.; Bartlome, R.; Choong, G.; De Wolf, Stefaan; Zicarelli, F.; Ballif, C.

2010-11-01

In silicon heterojunction solar cells, thin amorphous silicon layers passivate the crystalline silicon wafer surfaces. By using in situ diagnostics during plasma-enhanced chemical vapor deposition (PECVD), the authors report how the passivation quality of such layers directly relate to the plasma conditions. Good interface passivation is obtained from highly depleted silane plasmas. Based upon this finding, layers deposited in a large-area very high frequency (40.68 MHz) PECVD reactor were optimized for heterojunction solar cells, yielding aperture efficiencies up to 20.3% on 4 cm2 cells.

Integration of micro nano and bio technologies with layer-by-layer self-assembly

NASA Astrophysics Data System (ADS)

Kommireddy, Dinesh Shankar

In the past decade, layer-by-layer (LbL) nanoassembly has been used as a tool for immobilization and surface modification of materials with applications in biology and physical sciences. Often, in such applications, LbL assembly is integrated with various techniques to form functional surface coatings and immobilized matrices. In this work, integration of LbL with microfabrication and microfluidics, and tissue engineering are explored. In an effort to integrate microfabrication with LbL nanoassembly, microchannels were fabricated using soft-lithography and the surface of these channels was used for the immobilization of materials using LbL and laminar flow patterning. Synthesis of poly(dimethyldiallyl ammonium chloride)/poly(styrene sulfonate) and poly(dimethyldiallyl ammonium chloride)/bovine serum albumin microstrips is demonstrated with the laminar flow microfluidic reactor. Resulting micropatterns are 8-10 mum wide, separated with few micron gaps. The width of these microstrips as well as their position in the microchannel is controlled by varying the flow rate, time of interaction and concentration of the individual components, which is verified by numerical simulation. Spatially resolved pH sensitivity was observed by modifying the surface of the channel with a pH sensitive dye. In order to investigate the integration of LbL assembly with tissue engineering, glass substrates were coated with nanoparticle/polyelectrolyte layers, and two different cell types were used to test the applicability of these coatings for the surface modification of medical implants. Titanium dioxide (TiO 2), silicon dioxide, halloysite and montmorillonite nanoparticles were assembled with oppositely charged polyelectrolytes. In-vitro cytotoxicity tests of the nanoparticle substrates on human dermal firbroblasts (HDFs) showed that the nanoparticle surfaces do not have toxic effects on the cells. HDFs retained their phenotype on the nanoparticle coatings, by synthesizing type-I collagen. These cells also showed active proliferation on the nanoparticle substrates. Cells attached on TiO2 substrates showed faster rate of spreading compared with the other types of nanoparticle coatings. Mesenchymal stem cells (MSCs) were used as a second cell type to support and elaborate on the results obtained with the HDFs. Increasing surface roughness was observed with increasing number of layers of TiO2. Tests with a higher number of layers of TiO2, showed an increased attachment, proliferation and faster spreading of the MSCs on a larger number of layers of TiO2.

Optical modulation in silicon-vanadium dioxide photonic structures

NASA Astrophysics Data System (ADS)

Miller, Kevin J.; Hallman, Kent A.; Haglund, Richard F.; Weiss, Sharon M.

2017-08-01

All-optical modulators are likely to play an important role in future chip-scale information processing systems. In this work, through simulations, we investigate the potential of a recently reported vanadium dioxide (VO2) embedded silicon waveguide structure for ultrafast all-optical signal modulation. With a VO2 length of only 200 nm, finite-differencetime- domain simulations suggest broadband (200 nm) operation with a modulation greater than 12 dB and an insertion loss of less than 3 dB. Predicted performance metrics, including modulation speed, modulation depth, optical bandwidth, insertion loss, device footprint, and energy consumption of the proposed Si-VO2 all-optical modulator are benchmarked against those of current state-of-the-art all-optical modulators with in-plane optical excitation.

Optimization of amino group density on surfaces of titanium dioxide nanoparticles covalently bonded to a silicone substrate for antibacterial and cell adhesion activities.

PubMed

Okada, Masahiro; Yasuda, Shoji; Kimura, Tsuyoshi; Iwasaki, Mitsunobu; Ito, Seishiro; Kishida, Akio; Furuzono, Tsutomu

2006-01-01

A composite consisting of titanium dioxide (TiO2) particle, the surface of which was modified with amino groups, and a silicone substrate through covalent bonding at their interface was developed, and antibacterial and cell adhesion activities of the composite were evaluated. The density of the amino groups on the TiO2 particle surface was controlled by the reaction time of the modification reaction. The degradation rate of CH3CHO in the presence of the TiO2 particles under UV irradiation decreased with an increase in the amino group density on the TiO2 surface. On the other hand, the number of L929 cells adhering on the TiO2/silicone composite increased with an increase in the amino group density. From the above two results, the optimum density of amino groups for both photoreactivity and cell adhesiveness was estimated to be 2.0-4.0 molecules/nm2. The optimum amino group-modified TiO2/silicone composite sheet (amino group density, 3.0 molecules/nm2) showed an effective antibacterial activity for Escherichia coli bacteria under UV irradiation. (c) 2005 Wiley Periodicals, Inc

Electrolytic etch for preventing electrical shorts in solar cells on polymer surfaces

DOEpatents

Weber, Michael F.

1991-10-08

A method for preventing shorts and shunts in solar cells having in order, an insulating substrate, a conductive metal layer on the substrate, an amorphous silicon layer and a transparent conductive layer. The method includes anodic etching of exposed portions of the metal layer after deposition of the amorphous silicon and prior to depositing the transparent conductive layer.

MBE growth and optical properties of GaN layers on SiC/Si(111) hybrid substrate

NASA Astrophysics Data System (ADS)

Reznik, R. R.; Kotlyar, K. P.; Soshnikov, I. P.; Kukushkin, S. A.; Osipov, A. V.; Nikitina, E. V.; Cirlin, G. E.

2017-11-01

The fundamental possibility of the growth of GaN layers by molecular-beam epitaxy on a silicon substrate with nanoscale buffer layer of silicon carbide without any AlN layers has been demonstrated for the first time. Morphological properties of the resulting system have been studied.

Passivation of InGaAs(001)-(2 × 4) by Self-Limiting Chemical Vapor Deposition of a Silicon Hydride Control Layer.

PubMed

Edmonds, Mary; Kent, Tyler; Chagarov, Evgueni; Sardashti, Kasra; Droopad, Ravi; Chang, Mei; Kachian, Jessica; Park, Jun Hong; Kummel, Andrew

2015-07-08

A saturated Si-Hx seed layer for gate oxide or contact conductor ALD has been deposited via two separate self-limiting and saturating CVD processes on InGaAs(001)-(2 × 4) at substrate temperatures of 250 and 350 °C. For the first self-limiting process, a single silicon precursor, Si3H8, was dosed at a substrate temperature of 250 °C, and XPS results show the deposited silicon hydride layer saturated at about 4 monolayers of silicon coverage with hydrogen termination. STS results show the surface Fermi level remains unpinned following the deposition of the saturated silicon hydride layer, indicating the InGaAs surface dangling bonds are electrically passivated by Si-Hx. For the second self-limiting process, Si2Cl6 was dosed at a substrate temperature of 350 °C, and XPS results show the deposited silicon chloride layer saturated at about 2.5 monolayers of silicon coverage with chlorine termination. Atomic hydrogen produced by a thermal gas cracker was subsequently dosed at 350 °C to remove the Si-Cl termination by replacing with Si-H termination as confirmed by XPS, and STS results confirm the saturated Si-Hx bilayer leaves the InGaAs(001)-(2 × 4) surface Fermi level unpinned. Density function theory modeling of silicon hydride surface passivation shows an Si-Hx monolayer can remove all the dangling bonds and leave a charge balanced surface on InGaAs.

Thickness-controlled direct growth of nanographene and nanographite film on non-catalytic substrates

NASA Astrophysics Data System (ADS)

Du, Lei; Yang, Liu; Hu, Zhiting; Zhang, Jiazhen; Huang, Chunlai; Sun, Liaoxin; Wang, Lin; Wei, Dacheng; Chen, Gang; Lu, Wei

2018-05-01

Metal-catalyzed chemical vapor deposition (CVD) has been broadly employed for large-scale production of high-quality graphene. However, a following transfer process to targeted substrates is needed, which is incompatible with current silicon technology. We here report a new CVD approach to form nanographene and nanographite films with accurate thickness control directly on non-catalytic substrates such as silicon dioxide and quartz at 800 °C. The growth time is as short as a few seconds. The approach includes using 9-bis(diethylamino)silylanthracene as the carbon source and an atomic layer deposition (ALD) controlling system. The structure of the formed nanographene and nanographite films were characterized using atomic force microscopy, high resolution transmission electron microscopy, Raman scattering, and x-ray photoemission spectroscopy. The nanographite film exhibits a transmittance higher than 80% at 550 nm and a sheet electrical resistance of 2000 ohms per square at room temperature. A negative temperature-dependence of the resistance of the nanographite film is also observed. Moreover, the thickness of the films can be precisely controlled via the deposition cycles using an ALD system, which promotes great application potential for optoelectronic and thermoelectronic-devices.

Thickness-controlled direct growth of nanographene and nanographite film on non-catalytic substrates.

PubMed

Du, Lei; Yang, Liu; Hu, Zhiting; Zhang, Jiazhen; Huang, Chunlai; Sun, Liaoxin; Wang, Lin; Wei, Dacheng; Chen, Gang; Lu, Wei

2018-05-25

Metal-catalyzed chemical vapor deposition (CVD) has been broadly employed for large-scale production of high-quality graphene. However, a following transfer process to targeted substrates is needed, which is incompatible with current silicon technology. We here report a new CVD approach to form nanographene and nanographite films with accurate thickness control directly on non-catalytic substrates such as silicon dioxide and quartz at 800 °C. The growth time is as short as a few seconds. The approach includes using 9-bis(diethylamino)silylanthracene as the carbon source and an atomic layer deposition (ALD) controlling system. The structure of the formed nanographene and nanographite films were characterized using atomic force microscopy, high resolution transmission electron microscopy, Raman scattering, and x-ray photoemission spectroscopy. The nanographite film exhibits a transmittance higher than 80% at 550 nm and a sheet electrical resistance of 2000 ohms per square at room temperature. A negative temperature-dependence of the resistance of the nanographite film is also observed. Moreover, the thickness of the films can be precisely controlled via the deposition cycles using an ALD system, which promotes great application potential for optoelectronic and thermoelectronic-devices.

Materials and fabrication sequences for water soluble silicon integrated circuits at the 90 nm node

NASA Astrophysics Data System (ADS)

Yin, Lan; Bozler, Carl; Harburg, Daniel V.; Omenetto, Fiorenzo; Rogers, John A.

2015-01-01

Tungsten interconnects in silicon integrated circuits built at the 90 nm node with releasable configurations on silicon on insulator wafers serve as the basis for advanced forms of water-soluble electronics. These physically transient systems have potential uses in applications that range from temporary biomedical implants to zero-waste environmental sensors. Systematic experimental studies and modeling efforts reveal essential aspects of electrical performance in field effect transistors and complementary ring oscillators with as many as 499 stages. Accelerated tests reveal timescales for dissolution of the various constituent materials, including tungsten, silicon, and silicon dioxide. The results demonstrate that silicon complementary metal-oxide-semiconductor circuits formed with tungsten interconnects in foundry-compatible fabrication processes can serve as a path to high performance, mass-produced transient electronic systems.

Monolithically interconnected silicon-film™ module technology

NASA Astrophysics Data System (ADS)

DelleDonne, E. J.; Ford, D. H.; Hall, R. B.; Ingram, A. E.; Rand, J. A.; Barnett, A. M.

1999-03-01

AstroPower is developing an advanced thin-silicon-based, photovoltaic module product. A low-cost monolithic interconnected device is being integrated into a module that combines the design and process features of advanced light trapped, thin-silicon solar cells. This advanced product incorporates a low-cost substrate, a nominally 50-μm thick grown silicon layer with minority carrier diffusion lengths exceeding the active layer thickness, light trapping due to back-surface reflection, and back-surface passivation. The thin silicon layer enables high solar cell performance and can lead to a module conversion efficiency as high as 19%. These performance design features, combined with low-cost manufacturing using relatively low-cost capital equipment, continuous processing and a low-cost substrate, will lead to high-performance, low-cost photovoltaic panels.

Sinusoidal nanotextures for light management in silicon thin-film solar cells.

PubMed

Köppel, G; Rech, B; Becker, C

2016-04-28

Recent progresses in liquid phase crystallization enabled the fabrication of thin wafer quality crystalline silicon layers on low-cost glass substrates enabling conversion efficiencies up to 12.1%. Because of its indirect band gap, a thin silicon absorber layer demands for efficient measures for light management. However, the combination of high quality crystalline silicon and light trapping structures is still a critical issue. Here, we implement hexagonal 750 nm pitched sinusoidal and pillar shaped nanostructures at the sun-facing glass-silicon interface into 10 μm thin liquid phase crystallized silicon thin-film solar cell devices on glass. Both structures are experimentally studied regarding their optical and optoelectronic properties. Reflection losses are reduced over the entire wavelength range outperforming state of the art anti-reflective planar layer systems. In case of the smooth sinusoidal nanostructures these optical achievements are accompanied by an excellent electronic material quality of the silicon absorber layer enabling open circuit voltages above 600 mV and solar cell device performances comparable to the planar reference device. For wavelengths smaller than 400 nm and higher than 700 nm optical achievements are translated into an enhanced quantum efficiency of the solar cell devices. Therefore, sinusoidal nanotextures are a well-balanced compromise between optical enhancement and maintained high electronic silicon material quality which opens a promising route for future optimizations in solar cell designs for silicon thin-film solar cells on glass.

Double-shelled silicon anode nanocomposite materials: A facile approach for stabilizing electrochemical performance via interface construction

NASA Astrophysics Data System (ADS)

Du, Lulu; Wen, Zhongsheng; Wang, Guanqin; Yang, Yan-E.

2018-04-01

The rapid capacity fading induced by volumetric changes is the main issue that hinders the widespread application of silicon anode materials. Thus, double-shelled silicon composite materials where lithium silicate was located between an Nb2O5 coating layer and a silicon active core were configured to overcome the chemical compatibility issues related to silicon and oxides. The proposed composites were prepared via a facile co-precipitation method combined with calcination. Transmission electron microscopy and X-ray photoelectron spectroscopy analysis demonstrated that a transition layer of lithium silicate was constructed successfully, which effectively hindered the thermal inter-diffusion between the silicon and oxide coating layers during heat treatment. The electrochemical performance of the double-shelled silicon composites was enhanced dramatically with a retained specific capacity of 1030 mAh g-1 after 200 cycles at a current density of 200 mA g-1 compared with 598 mAh g-1 for a core-shell Si@Nb2O5 composite that lacked the interface. The lithium silicate transition layer was shown to play an important role in maintaining the high electrochemical stability.

Nested potassium hydroxide etching and protective coatings for silicon-based microreactors

NASA Astrophysics Data System (ADS)

de Mas, Nuria; Schmidt, Martin A.; Jensen, Klavs F.

2014-03-01

We have developed a multilayer, multichannel silicon-based microreactor that uses elemental fluorine as a reagent and generates hydrogen fluoride as a byproduct. Nested potassium hydroxide etching (using silicon nitride and silicon oxide as masking materials) was developed to create a large number of channels (60 reaction channels connected to individual gas and liquid distributors) of significantly different depths (50-650 µm) with sloped walls (54.7° with respect to the (1 0 0) wafer surface) and precise control over their geometry. The wetted areas were coated with thermally grown silicon oxide and electron-beam evaporated nickel films to protect them from the corrosive fluorination environment. Up to four Pyrex layers were anodically bonded to three silicon layers in a total of six bonding steps to cap the microchannels and stack the reaction layers. The average pinhole density in as-evaporated films was 3 holes cm-2. Heating during anodic bonding (up to 350 °C for 4 min) did not significantly alter the film composition. Upon fluorine exposure, nickel films (160 nm thick) deposited on an adhesion layer of Cr (10 nm) over an oxidized silicon substrate (up to 500 nm thick SiO2) led to the formation of a nickel fluoride passivation layer. This microreactor was used to investigate direct fluorinations at room temperature over several hours without visible signs of film erosion.

Thin film photovoltaic device with multilayer substrate

DOEpatents

Catalano, Anthony W.; Bhushan, Manjul

1984-01-01

A thin film photovoltaic device which utilizes at least one compound semiconductor layer chosen from Groups IIB and VA of the Periodic Table is formed on a multilayer substrate The substrate includes a lowermost support layer on which all of the other layers of the device are formed. Additionally, an uppermost carbide or silicon layer is adjacent to the semiconductor layer. Below the carbide or silicon layer is a metal layer of high conductivity and expansion coefficient equal to or slightly greater than that of the semiconductor layer.

A study of vapor-phase deposition of silicon nitride layers by ammonolysis of dichlorosilane at lowered pressure

DOE Office of Scientific and Technical Information (OSTI.GOV)

Manzha, N. M., E-mail: magazine@miee.ru

2010-12-15

Deposition kinetics of silicon nitride layers at lowered reactor pressures of 10-130 Pa and temperatures in the range 973-1073 K has been studied. The equilibrium constant of the bimolecular reaction of dichlorosilane with ammonia has been calculated. The apparent activation energies calculated taking into account the experimental growth rate nearly coincide with the experimental data. Recommendations for improving the quality of silicon nitride layers are made.

Separation and Detection of Toxic Gases with a Silicon Micromachined Gas Chromatography System

NASA Technical Reports Server (NTRS)

Kolesar, Edward S.; Reston, Rocky R.

1995-01-01

A miniature gas chromatography (GC) system was designed and fabricated using silicon micromachining and integrated circuit (IC) processing techniques. The silicon micromachined gas chromatography system (SMGCS) is composed of a miniature sample injector that incorporates a 10 microliter sample loop; a 0.9 meter long, rectangular shaped (300 micrometer width and 10 micrometer height) capillary column coated with a 0.2 micrometer thick copper phthalocyanine (CuPc) stationary phase; and a dual detector scheme based upon a CuPc-coated chemiresistor and a commercially available 125 micrometer diameter thermal conductivity detector (TCD) bead. Silicon micromachining was employed to fabricate the interface between the sample injector and the GC column, the column itself, and the dual detector cavity. A novel IC thin-film processing technique was developed to sublime the CuPc stationary phase coating on the column walls that were micromachined in the host silicon wafer substrate and Pyrex (r) cover plate, which were then electrostatically bonded together. The SMGCS can separate binary gas mixtures composed of parts-per-million (ppm) concentrations of ammonia (NH3) and nitrogen dioxide (NO2) when isothermally operated (55-80 degrees C). With a helium carrier gas and nitrogen diluent, a 10 microliter sample volume containing ammonia and nitrogen dioxide injected at 40 psi ((2.8 x 10(exp 5)Pa)) can be separated in less than 30 minutes.

Deuterium trapping in the carbon-silicon co-deposition layers prepared by RF sputtering in D2 atmosphere

NASA Astrophysics Data System (ADS)

Zhang, Hongliang; Zhang, Weiyuan; Su, Ranran; Tu, Hanjun; Shi, Liqun; Hu, Jiansheng

2018-04-01

Deuterated carbon-silicon layers co-deposited on graphite and silicon substrates by radio frequency magnetron sputtering in pure D2 plasma were produced to study deuterium trapping and characteristics of the C-Si layers. The C-Si co-deposited layers were examined by ion beam analysis (IBA), Raman spectroscopy (RS), infrared absorption (IR) spectroscopy, thermal desorption spectroscopy (TDS) and scanning electron microscopy (SEM). It was found that the growth rate of the C-Si co-deposition layer decreased with increasing temperature from 350 K to 800 K, the D concentration and C/Si ratios increased differently on graphite and silicon substrates. TDS shows that D desorption is mainly as D2, HD, HDO, CD4, and C2D4 and release peaks occurred at temperatures of less than 900 K. RS and IR analysis reveal that the structure of the C-Si layers became more disordered with increasing temperatures. Rounded areas of peeling with 1-2 μm diameters were observed on the surface.

Proton exchange membrane micro fuel cells on 3D porous silicon gas diffusion layers

NASA Astrophysics Data System (ADS)

Kouassi, S.; Gautier, G.; Thery, J.; Desplobain, S.; Borella, M.; Ventura, L.; Laurent, J.-Y.

2012-10-01

Since the 90's, porous silicon has been studied and implemented in many devices, especially in MEMS technology. In this article, we present a new approach to build miniaturized proton exchange membrane micro-fuel cells using porous silicon as a hydrogen diffusion layer. In particular, we propose an innovative process to build micro fuel cells from a “corrugated iron like” 3D structured porous silicon substrates. This structure is able to increase up to 40% the cell area keeping a constant footprint on the silicon wafer. We propose here a process route to perform electrochemically 3D porous gas diffusion layers and to deposit fuel cell active layers on such substrates. The prototype peak power performance was measured to be 90 mW cm-2 in a “breathing configuration” at room temperature. These performances are less than expected if we compare with a reference 2D micro fuel cell. Actually, the active layer deposition processes are not fully optimized but this prototype demonstrates the feasibility of these 3D devices.

Influence of deposition rate on the structural properties of plasma-enhanced CVD epitaxial silicon.

PubMed

Chen, Wanghua; Cariou, Romain; Hamon, Gwenaëlle; Léal, Ronan; Maurice, Jean-Luc; Cabarrocas, Pere Roca I

2017-03-06

Solar cells based on epitaxial silicon layers as the absorber attract increasing attention because of the potential cost reduction. In this work, we studied the influence of the deposition rate on the structural properties of epitaxial silicon layers produced by plasma-enhanced chemical vapor deposition (epi-PECVD) using silane as a precursor and hydrogen as a carrier gas. We found that the crystalline quality of epi-PECVD layers depends on their thickness and deposition rate. Moreover, increasing the deposition rate may lead to epitaxy breakdown. In that case, we observe the formation of embedded amorphous silicon cones in the epi-PECVD layer. To explain this phenomenon, we develop a model based on the coupling of hydrogen and built-in strain. By optimizing the deposition conditions to avoid epitaxy breakdown, including substrate temperatures and plasma potential, we have been able to synthesize epi-PECVD layers up to a deposition rate of 8.3 Å/s. In such case, we found that the incorporation of hydrogen in the hydrogenated crystalline silicon can reach 4 at. % at a substrate temperature of 350 °C.

Influence of deposition rate on the structural properties of plasma-enhanced CVD epitaxial silicon

PubMed Central

Chen, Wanghua; Cariou, Romain; Hamon, Gwenaëlle; Léal, Ronan; Maurice, Jean-Luc; Cabarrocas, Pere Roca i

2017-01-01

Solar cells based on epitaxial silicon layers as the absorber attract increasing attention because of the potential cost reduction. In this work, we studied the influence of the deposition rate on the structural properties of epitaxial silicon layers produced by plasma-enhanced chemical vapor deposition (epi-PECVD) using silane as a precursor and hydrogen as a carrier gas. We found that the crystalline quality of epi-PECVD layers depends on their thickness and deposition rate. Moreover, increasing the deposition rate may lead to epitaxy breakdown. In that case, we observe the formation of embedded amorphous silicon cones in the epi-PECVD layer. To explain this phenomenon, we develop a model based on the coupling of hydrogen and built-in strain. By optimizing the deposition conditions to avoid epitaxy breakdown, including substrate temperatures and plasma potential, we have been able to synthesize epi-PECVD layers up to a deposition rate of 8.3 Å/s. In such case, we found that the incorporation of hydrogen in the hydrogenated crystalline silicon can reach 4 at. % at a substrate temperature of 350 °C. PMID:28262840

Low-resistivity photon-transparent window attached to photo-sensitive silicon detector

DOEpatents

Holland, Stephen Edward

2000-02-15

The invention comprises a combination of a low resistivity, or electrically conducting, silicon layer that is transparent to long or short wavelength photons and is attached to the backside of a photon-sensitive layer of silicon, such as a silicon wafer or chip. The window is applied to photon sensitive silicon devices such as photodiodes, charge-coupled devices, active pixel sensors, low-energy x-ray sensors and other radiation detectors. The silicon window is applied to the back side of a photosensitive silicon wafer or chip so that photons can illuminate the device from the backside without interference from the circuit printed on the frontside. A voltage sufficient to fully deplete the high-resistivity photosensitive silicon volume of charge carriers is applied between the low-resistivity back window and the front, patterned, side of the device. This allows photon-induced charge created at the backside to reach the front side of the device and to be processed by any circuitry attached to the front side. Using the inventive combination, the photon sensitive silicon layer does not need to be thinned beyond standard fabrication methods in order to achieve full charge-depletion in the silicon volume. In one embodiment, the inventive backside window is applied to high resistivity silicon to allow backside illumination while maintaining charge isolation in CCD pixels.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Yin, Lan; Harburg, Daniel V.; Rogers, John A., E-mail: jrogers@illinois.edu

Tungsten interconnects in silicon integrated circuits built at the 90 nm node with releasable configurations on silicon on insulator wafers serve as the basis for advanced forms of water-soluble electronics. These physically transient systems have potential uses in applications that range from temporary biomedical implants to zero-waste environmental sensors. Systematic experimental studies and modeling efforts reveal essential aspects of electrical performance in field effect transistors and complementary ring oscillators with as many as 499 stages. Accelerated tests reveal timescales for dissolution of the various constituent materials, including tungsten, silicon, and silicon dioxide. The results demonstrate that silicon complementary metal-oxide-semiconductor circuits formedmore » with tungsten interconnects in foundry-compatible fabrication processes can serve as a path to high performance, mass-produced transient electronic systems.« less

Maskless Lithography and in situ Visualization of Conductivity of Graphene using Helium Ion Microscopy

DOE PAGES

Iberi, Vighter O.; Vlassiouk, Ivan V.; Zhang, X. -G.; ...

2015-07-07

The remarkable mechanical and electronic properties of graphene make it an ideal candidate for next generation nanoelectronics. With the recent development of commercial-level single-crystal graphene layers, the potential for manufacturing household graphene-based devices has improved, but significant challenges still remain with regards to patterning the graphene into devices. In the case of graphene supported on a substrate, traditional nanofabrication techniques such as e-beam lithography (EBL) are often used in fabricating graphene nanoribbons but the multi-step processes they require can result in contamination of the graphene with resists and solvents. In this letter, we report the utility of scanning helium ionmore » lithography for fabricating functional graphene nanoconductors that are supported directly on a silicon dioxide layer, and we measure the minimum feature size achievable due to limitations imposed by thermal fluctuations and ion scattering during the milling process. Further we demonstrate that ion beams, due to their positive charging nature, may be used to observe and test the conductivity of graphene-based nanoelectronic devices in situ.« less

Optimization of a Solution-Processed SiO2 Gate Insulator by Plasma Treatment for Zinc Oxide Thin Film Transistors.

PubMed

Jeong, Yesul; Pearson, Christopher; Kim, Hyun-Gwan; Park, Man-Young; Kim, Hongdoo; Do, Lee-Mi; Petty, Michael C

2016-01-27

We report on the optimization of the plasma treatment conditions for a solution-processed silicon dioxide gate insulator for application in zinc oxide thin film transistors (TFTs). The SiO2 layer was formed by spin coating a perhydropolysilazane (PHPS) precursor. This thin film was subsequently thermally annealed, followed by exposure to an oxygen plasma, to form an insulating (leakage current density of ∼10(-7) A/cm(2)) SiO2 layer. Optimized ZnO TFTs (40 W plasma treatment of the gate insulator for 10 s) possessed a carrier mobility of 3.2 cm(2)/(V s), an on/off ratio of ∼10(7), a threshold voltage of -1.3 V, and a subthreshold swing of 0.2 V/decade. In addition, long-term exposure (150 min) of the pre-annealed PHPS to the oxygen plasma enabled the maximum processing temperature to be reduced from 180 to 150 °C. The resulting ZnO TFT exhibited a carrier mobility of 1.3 cm(2)/(V s) and on/off ratio of ∼10(7).

Manufacture of Micromirror Arrays Using a CMOS-MEMS Technique

PubMed Central

Kao, Pin-Hsu; Dai, Ching-Liang; Hsu, Cheng-Chih; Wu, Chyan-Chyi

2009-01-01

In this study we used the commercial 0.35 μm CMOS (complementary metal oxide semiconductor) process and simple maskless post-processing to fabricate an array of micromirrors exhibiting high natural frequency. The micromirrors were manufactured from aluminum; the sacrificial layer was silicon dioxide. Because we fabricated the micromirror arrays using the standard CMOS process, they have the potential to be integrated with circuitry on a chip. For post-processing we used an etchant to remove the sacrificial layer and thereby suspend the micromirrors. The micromirror array contained a circular membrane and four fixed beams set symmetrically around and below the circular mirror; these four fan-shaped electrodes controlled the tilting of the micromirror. A MEMS (microelectromechanical system) motion analysis system and a confocal 3D-surface topography were used to characterize the properties and configuration of the micromirror array. Each micromirror could be rotated in four independent directions. Experimentally, we found that the micromirror had a tilting angle of about 2.55° when applying a driving voltage of 40 V. The natural frequency of the micromirrors was 59.1 kHz. PMID:22454581

Manufacture of Micromirror Arrays Using a CMOS-MEMS Technique.

PubMed

Kao, Pin-Hsu; Dai, Ching-Liang; Hsu, Cheng-Chih; Wu, Chyan-Chyi

2009-01-01

In this study we used the commercial 0.35 μm CMOS (complementary metal oxide semiconductor) process and simple maskless post-processing to fabricate an array of micromirrors exhibiting high natural frequency. The micromirrors were manufactured from aluminum; the sacrificial layer was silicon dioxide. Because we fabricated the micromirror arrays using the standard CMOS process, they have the potential to be integrated with circuitry on a chip. For post-processing we used an etchant to remove the sacrificial layer and thereby suspend the micromirrors. The micromirror array contained a circular membrane and four fixed beams set symmetrically around and below the circular mirror; these four fan-shaped electrodes controlled the tilting of the micromirror. A MEMS (microelectromechanical system) motion analysis system and a confocal 3D-surface topography were used to characterize the properties and configuration of the micromirror array. Each micromirror could be rotated in four independent directions. Experimentally, we found that the micromirror had a tilting angle of about 2.55° when applying a driving voltage of 40 V. The natural frequency of the micromirrors was 59.1 kHz.

Method for integrating microelectromechanical devices with electronic circuitry

DOEpatents

Barron, Carole C.; Fleming, James G.; Montague, Stephen

1999-01-01

A method is disclosed for integrating one or more microelectromechanical (MEM) devices with electronic circuitry on a common substrate. The MEM device can be fabricated within a substrate cavity and encapsulated with a sacrificial material. This allows the MEM device to be annealed and the substrate planarized prior to forming electronic circuitry on the substrate using a series of standard processing steps. After fabrication of the electronic circuitry, the electronic circuitry can be protected by a two-ply protection layer of titanium nitride (TiN) and tungsten (W) during an etch release process whereby the MEM device is released for operation by etching away a portion of a sacrificial material (e.g. silicon dioxide or a silicate glass) that encapsulates the MEM device. The etch release process is preferably performed using a mixture of hydrofluoric acid (HF) and hydrochloric acid (HCI) which reduces the time for releasing the MEM device compared to use of a buffered oxide etchant. After release of the MEM device, the TiN:W protection layer can be removed with a peroxide-based etchant without damaging the electronic circuitry.

Method of bonding silver to glass and mirrors produced according to this method

DOEpatents

Pitts, J.R.; Thomas, T.M.; Czanderna, A.W.

1984-07-31

A method for adhering silver to a glass substrate for producing mirrors includes attaining a silicon enriched substrate surface by reducing the oxygen therein in a vacuum and then vacuum depositing a silver layer onto the silicon enriched surface. The silicon enrichment can be attained by electron beam bombardment, ion beam bombardment, or neutral beam bombardment. It can also be attained by depositing a metal, such as aluminum, on the substrate surface, allowing the metal to oxidize by pulling oxygen from the substrate surface, thereby leaving a silicon enriched surface, and then etching or eroding the metal oxide layer away to expose the silicon enriched surface. Ultraviolet rays can be used to maintain dangling silicon bonds on the enriched surface until covalent bonding with the silver can occur. This disclosure also includes encapsulated mirrors with diffusion layers built therein. One of these mirrors is assembled on a polymer substrate.

Method of bonding silver to glass and mirrors produced according to this method

DOEpatents

Pitts, John R.; Thomas, Terence M.; Czanderna, Alvin W.

1985-01-01

A method for adhering silver to a glass substrate for producing mirrors includes attaining a silicon enriched substrate surface by reducing the oxygen therein in a vacuum and then vacuum depositing a silver layer onto the silicon enriched surface. The silicon enrichment can be attained by electron beam bombardment, ion beam bombardment, or neutral beam bombardment. It can also be attained by depositing a metal, such as aluminum, on the substrate surface, allowing the metal to oxidize by pulling oxygen from the substrate surface, thereby leaving a silicon enriched surface, and then etching or eroding the metal oxide layer away to expose the silicon enriched surface. Ultraviolet rays can be used to maintain dangling silicon bonds on the enriched surface until covalent bonding with the silver can occur. This disclosure also includes encapsulated mirrors with diffusion layers built therein. One of these mirrors is assembled on a polymer substrate.

Elevated carbon dioxide and warming impact silicon and phenolic-based defences differently in native and exotic grasses.

PubMed

Johnson, Scott N; Hartley, Susan E

2017-11-03

Global climate change may increase invasions of exotic plant species by directly promoting the success of invasive/exotic species or by reducing the competitive abilities of native species. Changes in plant chemistry, leading to altered susceptibility to stress, could mediate these effects. Grasses are hyper-accumulators of silicon, which play a crucial function in the alleviation of diverse biotic and abiotic stresses. It is unknown how predicted increases in atmospheric carbon dioxide (CO 2 ) and air temperature affect silicon accumulation in grasses, especially in relation to primary and secondary metabolites. We tested how elevated CO 2 (eCO 2 ) (+240 ppm) and temperature (eT) (+4°C) affected chemical composition (silicon, phenolics, carbon and nitrogen) and plant growth in eight grass species, either native or exotic to Australia. eCO 2 increased phenolic concentrations by 11%, but caused silicon accumulation to decline by 12%. Moreover, declines in silicon occurred mainly in native species (-19%), but remained largely unchanged in exotic species. Conversely, eT increased silicon accumulation in native species (+19%) but decreased silicon accumulation in exotic species (-10%). Silicon and phenolic concentrations were negatively correlated with each other, potentially reflecting a defensive trade-off. Moreover, both defences were negatively correlated with plant mass, compatible with a growth-defence trade-off. Grasses responded in a species-specific manner, suggesting that the relative susceptibility of different species may differ under future climates compared to current species rankings of resource quality. For example, the native Microlaena stipoides was less well defended under eCO 2 in terms of both phenolics and silicon, and thus could suffer greater vulnerability to herbivores. To our knowledge, this is the first demonstration of the impacts of eCO 2 and eT on silicon accumulation in grasses. We speculate that the greater plasticity in silicon uptake shown by Australian native grasses may be partly a consequence of evolving in a low nutrient and seasonally arid environment. © 2017 John Wiley & Sons Ltd.

Silicon nitride protective coatings for silvered glass mirrors

DOEpatents

Tracy, C. Edwin; Benson, David K.

1988-01-01

A protective diffusion barrier for metalized mirror structures is provided by a layer or coating of silicon nitride which is a very dense, transparent, dielectric material that is impervious to water, alkali, and other impurities and corrosive substances that typically attack the metal layers of mirrors and cause degradation of the mirrors' reflectivity. The silicon nitride layer can be deposited on the substrate before metal deposition to stabilize the metal/substrate interface, and it can be deposited over the metal to encapsulate it and protect the metal from corrosion or other degradation. Mirrors coated with silicon nitride according to this invention can also be used as front surface mirrors.

Silicon nitride protective coatings for silvered glass mirrors

DOEpatents

Tracy, C.E.; Benson, D.K.

1984-07-20

A protective diffusion barrier for metalized mirror structures is provided by a layer or coating of silicon nitride which is a very dense, transparent, dielectric material that is impervious to water, alkali, and other impurities and corrosive substances that typically attack the metal layers of mirrors and cause degradation of the mirrors' reflectivity. The silicon nitride layer can be deposited on the substrate prior to metal deposition thereon to stabilize the metal/substrate interface, and it can be deposited over the metal to encapsulate it and protect the metal from corrosion or other degradation. Mirrors coated with silicon nitride according to this invention can also be used as front surface mirrors.

Self-Cleaning Anticondensing Glass via Supersonic Spraying of Silver Nanowires, Silica, and Polystyrene Nanoparticles.

PubMed

Lee, Jong-Gun; An, Seongpil; Kim, Tae-Gun; Kim, Min-Woo; Jo, Hong-Seok; Swihart, Mark T; Yarin, Alexander L; Yoon, Sam S

2017-10-11

We have sequentially deposited layers of silver nanowires (AgNWs), silicon dioxide (SiO 2 ) nanoparticles, and polystyrene (PS) nanoparticles on uncoated glass by a rapid low-cost supersonic spraying method to create antifrosting, anticondensation, and self-cleaning glass. The conductive silver nanowire network embedded in the coating allows electrical heating of the glass surface. Supersonic spraying is a single-step coating technique that does not require vacuum. The fabricated multifunctional glass was characterized by X-ray diffraction analysis (XRD), scanning electron microscopy (SEM), atomic force microscopy (AFM), ultraviolet-visible spectroscopy, and transmission electron microscopy (TEM). The thermal insulation and antifrosting performance were demonstrated using infrared thermal imaging. The reliability of the electrical heating function was tested through extensive cycling. This transparent multifunctional coating holds great promise for use in various smart window designs.

Formation of grafted surface layers on silicon dioxide particles and their investigation by means of thermoprogrammed oxidation

NASA Astrophysics Data System (ADS)

Aleksandrova, E. O.; Novichkov, R. V.; Olenin, A. Yu.; Zuev, B. K.

2017-03-01

Silica nanoparticles are obtained according to the Stober-Fink-Bohn method, and their surfaces are chemically modified with 1H,1H,2H,2H-perfluorodecyltriethoxysilane. It is estimated that sols of porous silica nanoparticles (average sizes, 50-200 nm) form during primary chemical process; the average size of the particles can be increased to 400-500 nm by consecutive growth. Oxythermography (thermoprogrammed oxidation) measurements reveal a stepped dependence between the content of organic substance of nanoparticles and the duration of chemical modification reaction exists. It is concluded that this could be due to the formation of dense shell (or shells) as a result of sols aging between the cycles of growth; such shells impose diffusive restrictions when molecules penetrate into the pores of the internal volume of the particles.

Improvement in crystal quality and optical properties of n-type GaN employing nano-scale SiO2 patterned n-type GaN substrate.

PubMed

Jo, Min Sung; Sadasivam, Karthikeyan Giri; Tawfik, Wael Z; Yang, Seung Bea; Lee, Jung Ju; Ha, Jun Seok; Moon, Young Boo; Ryu, Sang Wan; Lee, June Key

2013-01-01

n-type GaN epitaxial layers were regrown on the patterned n-type GaN substrate (PNS) with different size of silicon dioxide (SiO2) nano dots to improve the crystal quality and optical properties. PNS with SiO2 nano dots promotes epitaxial lateral overgrowth (ELOG) for defect reduction and also acts as a light scattering point. Transmission electron microscopy (TEM) analysis suggested that PNS with SiO2 nano dots have superior crystalline properties. Hall measurements indicated that incrementing values in electron mobility were clear indication of reduction in threading dislocation and it was confirmed by TEM analysis. Photoluminescence (PL) intensity was enhanced by 2.0 times and 3.1 times for 1-step and 2-step PNS, respectively.

Chargeability measurements of selected pharmaceutical dry powders to assess their electrostatic charge control capabilities.

PubMed

Ramirez-Dorronsoro, Juan-Carlos; Jacko, Robert B; Kildsig, Dane O

2006-01-01

The purpose of this study was to develop an instrument (the Purdue instrument) and the corresponding methodologies to measure the electrostatic charge development (chargeability) of dry powders when they are in dynamic contact with stainless steel surfaces. The system used an inductive noncontact sensor located inside an aluminum Faraday cage and was optimized to measure the charging capabilities of a fixed volume of powder (0.5 cc). The chargeability of 5,5-diphenyl-hydantoin, calcium sulfate dihydrate, cimetidine, 3 grades of colloidal silicon dioxide, magnesium stearate, 4 grades of microcrystalline cellulose, salicylic acid, sodium carbonate, sodium salicylate, spray-dried lactose, and sulfinpyrazone were tested at 4 linear velocities, and the particle size distribution effect was assessed for 3 different grades of colloidal silicon dioxide and 4 different grades of microcrystalline cellulose. The chargeability values exhibited a linear relationship for the range of velocities studied, with colloidal silicon dioxide exhibiting the maximum negative chargeability and with spray-dried lactose being the only compound to exhibit positive chargeability. The instrument sensitivity was improved by a factor of 2 over the first generation version, and the electrostatic charge measurements were reproducible with relative standard deviations ranging from nondetectable to 33.7% (minimum of 3 replicates). These results demonstrate the feasibility of using the Purdue instrument to measure the electrostatic charge control capabilities of pharmaceutical dry powders with a reasonable level of precision.

Silicon waveguide optical switch with embedded phase change material.

PubMed

Miller, Kevin J; Hallman, Kent A; Haglund, Richard F; Weiss, Sharon M

2017-10-30

Phase-change materials (PCMs) have emerged as promising active elements in silicon (Si) photonic systems. In this work, we design, fabricate, and characterize a hybrid Si-PCM optical switch. By integrating vanadium dioxide (a PCM) within a Si photonic waveguide, in a non-resonant geometry, we achieve ~10 dB broadband optical contrast with a PCM length of 500 nm using thermal actuation.

Lateral hydrogen microsensors prepared on-chip by local oxidation of platinum-decorated titanium films

NASA Astrophysics Data System (ADS)

Herbertz, S.; Welk, D.; Heinzel, T.

2018-05-01

Titanium microstripes on silicon dioxide substrates are oxidized locally by applying voltages on-chip to lateral electrodes under ambient conditions. This technique enables profound modifications of the electronic circuit. As an example, we transform Ti films decorated by a sub-monolayer of platinum into hydrogen gas microsensors in an otherwise completed device by a silicon-MOS compatible process.

Beam Simulation Studies of Plasma-Surface Interactions in Fluorocarbon Etching of Silicon and Silicon Dioxide

NASA Astrophysics Data System (ADS)

Gray, David C.

1992-01-01

A molecular beam apparatus has been constructed which allows the synthesis of dominant species fluxes to a wafer surface during fluorocarbon plasma etching. These species include atomic F as the primary etchant, CF _2 as a potential polymer forming precursor, and Ar^{+} or CF _{rm x}^{+} type ions. Ionic and neutral fluxes employed are within an order of magnitude of those typical of fluorocarbon plasmas and are well characterized through the use of in -situ probes. Etching yields and product distributions have been measured through the use of in-situ laser interferometry and line-of-sight mass spectrometry. XPS studies of etched surfaces were performed to assess surface chemical bonding states and average surface stoichiometry. A useful design guide was developed which allows optimal design of straight -tube molecular beam dosers in the collisionally-opaque regime. Ion-enhanced surface reaction kinetics have been studied as a function of the independently variable fluxes of free radicals and ions, as well as ion energy and substrate temperature. We have investigated the role of Ar ^{+} ions in enhancing the chemistries of F and CF_2 separately, and in combination on undoped silicon and silicon dioxide surfaces. We have employed both reactive and inert ions in the energy range most relevant to plasma etching processes, 20-500 eV, through the use of Kaufman and ECR type ion sources. The effect of increasing ion energy on the etching of fluorine saturated silicon and silicon dioxide surfaces was quantified through extensions of available low energy physical sputtering theory. Simple "site"-occupation models were developed for the quantification of the ion-enhanced fluorine etching kinetics in these systems. These models are suitable for use in topography evolution simulators (e.g. SAMPLE) for the predictive modeling of profile evolution in non-depositing fluorine-based plasmas such as NF_3 and SF_6. (Copies available exclusively from MIT Libraries, Rm. 14-0551, Cambridge, MA 02139-4307. Ph. 617 -253-5668; Fax 617-253-1690.) (Abstract shortened with permission of school.).