Ballistic Phonon Penetration Depth in Amorphous Silicon Dioxide.

PubMed

Yang, Lin; Zhang, Qian; Cui, Zhiguang; Gerboth, Matthew; Zhao, Yang; Xu, Terry T; Walker, D Greg; Li, Deyu

2017-12-13

Thermal transport in amorphous silicon dioxide (a-SiO 2 ) is traditionally treated as random walks of vibrations owing to its greatly disordered structure, which results in a mean free path (MFP) approximately the same as the interatomic distance. However, this picture has been debated constantly and in view of the ubiquitous existence of thin a-SiO 2 layers in nanoelectronic devices, it is imperative to better understand this issue for precise thermal management of electronic devices. Different from the commonly used cross-plane measurement approaches, here we report on a study that explores the in-plane thermal conductivity of double silicon nanoribbons with a layer of a-SiO 2 sandwiched in-between. Through comparing the thermal conductivity of the double ribbon samples with that of corresponding single ribbons, we show that thermal phonons can ballistically penetrate through a-SiO 2 of up to 5 nm thick even at room temperature. Comprehensive examination of double ribbon samples with various oxide layer thicknesses and van der Waals bonding strengths allows for extraction of the average ballistic phonon penetration depth in a-SiO 2 . With solid experimental data demonstrating ballistic phonon transport through a-SiO 2 , this work should provide important insight into thermal management of electronic devices.

Determination of effective mechanical properties of a double-layer beam by means of a nano-electromechanical transducer

DOE Office of Scientific and Technical Information (OSTI.GOV)

Hocke, Fredrik; Pernpeintner, Matthias; Gross, Rudolf, E-mail: rudolf.gross@wmi.badw.de

We investigate the mechanical properties of a doubly clamped, double-layer nanobeam embedded into an electromechanical system. The nanobeam consists of a highly pre-stressed silicon nitride and a superconducting niobium layer. By measuring the mechanical displacement spectral density both in the linear and the nonlinear Duffing regime, we determine the pre-stress and the effective Young's modulus of the nanobeam. An analytical double-layer model quantitatively corroborates the measured values. This suggests that this model can be used to design mechanical multilayer systems for electro- and optomechanical devices, including materials controllable by external parameters such as piezoelectric, magnetostrictive, or in more general multiferroicmore » materials.« less

Plasmonic layers based on Au-nanoparticle-doped TiO2 for optoelectronics: structural and optical properties.

PubMed

Pedrueza, E; Sancho-Parramon, J; Bosch, S; Valdés, J L; Martinez-Pastor, J P

2013-02-15

The anti-reflective effect of dielectric coatings used in silicon solar cells has traditionally been the subject of intensive studies and practical applications. In recent years the interest has permanently grown in plasmonic layers based on metal nanoparticles, which are shown to increase light trapping in the underlying silicon. In the present work we have combined these two concepts by means of in situ synthesis of Au nanoparticles in a dielectric matrix (TiO2), which is commonly used as an anti-reflective coating in silicon solar cells, and added the third element: a 10-20% porosity in the matrix. The porosity is formed by means of a controllable wet etching by low concentration HF. As a consequence, the experimentally measured reflectance of silicon coated by such a plasmonic layer decreases to practically zero in a broad wavelength region around the localized surface plasmon resonance. Furthermore, we demonstrate that extinction and reflectance spectra of silicon coated by the plasmonic films can be successfully accounted for by means of Fresnel formulae, in which a double refractive index of the metal-dielectric material is used. This double refractive index cannot be explained by effective medium theory (Maxwell-Garnett, for example) and appears when the contribution of Au nanoparticles located at the TiO2/Si interface is high enough to result in formation of interface surface plasmon modes.

The design and performance of the nano-carbon based double layers flexible coating for tunable and high-efficiency microwave absorption

NASA Astrophysics Data System (ADS)

Zhang, Danfeng; Hao, Zhifeng; Qian, Yannan; Zeng, Bi; Zhu, Haiping; Wu, Qibai; Yan, Chengjie; Chen, Muyu

2018-05-01

Nanocarbon-based materials are outstanding microwave absorbers with good dielectric properties. In this study, double-layer silicone resin flexible absorbing coatings, composed of carbon-coated nickel nanoparticles (Ni@C) and carbon nanotubes (CNTs), with low loading and a total thickness of 2 mm, were prepared. The reflection loss (RL) of the double-layer absorbing coatings has measured for frequencies between 2 and 18 GHz using the Arch reflecting testing method. The effects of the thickness and electromagnetic parameters of each layer and of the layer sequence on the absorbing properties were investigated. It is found that the measured bandwidth (RL ≤ - 10 dB) of the optimum double-layer structure in our experiment range achieves 3.70 GHz. The results indicated that the double coating structure composed of different materials has greater synergistic absorption effect on impedance matching than that of same materials with different loading. The maximum RL of S1 (5 wt% CNTs)/S3 (60 wt% Ni@C) double-layer absorbing coating composed of different materials (S1 and S3) was larger than the one achieved using either S1 or S3 alone with the same thickness. This was because double-layer coating provided a suitable matching layer and improve the interfacial impedance. It was also shown that absorbing peak value and frequency position can be adjusted by double-layer coating structure.

Structure analysis of aqueous ferrofluids at interface with silicon: neutron reflectometry data

NASA Astrophysics Data System (ADS)

Gapon, I. V.; Petrenko, V. I.; Bulavin, L. A.; Balasoiu, M.; Kubovcikova, M.; Zavisova, V.; Koneracka, M.; Kopcansky, P.; Chiriac, H.; Avdeev, M. V.

2017-05-01

Adsorption of nanoparticles from aqueous ferrofluids (FFs) on solid surface (crystalline silicon) was studied by neutron reflectometry (NR). Two kinds of FFs were considered. First kind was heavy water-based ferrofluids with magnetite nanoparticles coated by double layer of sodium oleate. Second one FF was cobalt ferrite nanoparticles stabilized by lauric acid/sodium n-dodecylsulphate layer and dispersed in water. It was obtained only a single adsorption layer for two types of ferrofluids. The impact of the magnetic nanoparticles concentration and geometry was considered in frame of the adsorption characteristic of FFs.

An Array of Layers in Silicon Sulfides: Chain-like and Ground State Structures

NASA Astrophysics Data System (ADS)

Alonso-Lanza, Tomás; Ayuela, Andrés; Aguilera-Granja, Faustino

While much is known about isoelectronic materials related to carbon nanostructures, such as boron nitride layers and nanotubes, rather less is known about equivalent silicon based materials. Following the recent discovery of phosphorene, we here discuss isoelectronic silicon monosulfide monolayers. We describe a set of anisotropic ground state structures that clearly have a high stability with respect to the near isotropic silicon monosulfide monolayers. The source of the layer anisotropy is related to the presence of Si-S double chains linked by some Si-Si covalent bonds, which lie at the core of the increased stability, together with a remarkable spd hybridization on Si. The involvement of d orbitals brings more variety to silicon-sulfide based nanostructures that are isoelectronic to phosphorene, which could be relevant for future applications, adding extra degrees of freedom. Spanish Ministry of Economy and Competitiveness MINECO, Basque Government (ETORTEK Program 2014), University of the Basque Country (GrantGrant No. IT-366-07) and MPC Material Physics Center - San Sebastián.

23.6%-efficient monolithic perovskite/silicon tandem solar cells with improved stability

NASA Astrophysics Data System (ADS)

Bush, Kevin A.; Palmstrom, Axel F.; Yu, Zhengshan J.; Boccard, Mathieu; Cheacharoen, Rongrong; Mailoa, Jonathan P.; McMeekin, David P.; Hoye, Robert L. Z.; Bailie, Colin D.; Leijtens, Tomas; Peters, Ian Marius; Minichetti, Maxmillian C.; Rolston, Nicholas; Prasanna, Rohit; Sofia, Sarah; Harwood, Duncan; Ma, Wen; Moghadam, Farhad; Snaith, Henry J.; Buonassisi, Tonio; Holman, Zachary C.; Bent, Stacey F.; McGehee, Michael D.

2017-02-01

As the record single-junction efficiencies of perovskite solar cells now rival those of copper indium gallium selenide, cadmium telluride and multicrystalline silicon, they are becoming increasingly attractive for use in tandem solar cells due to their wide, tunable bandgap and solution processability. Previously, perovskite/silicon tandems were limited by significant parasitic absorption and poor environmental stability. Here, we improve the efficiency of monolithic, two-terminal, 1-cm2 perovskite/silicon tandems to 23.6% by combining an infrared-tuned silicon heterojunction bottom cell with the recently developed caesium formamidinium lead halide perovskite. This more-stable perovskite tolerates deposition of a tin oxide buffer layer via atomic layer deposition that prevents shunts, has negligible parasitic absorption, and allows for the sputter deposition of a transparent top electrode. Furthermore, the window layer doubles as a diffusion barrier, increasing the thermal and environmental stability to enable perovskite devices that withstand a 1,000-hour damp heat test at 85 ∘C and 85% relative humidity.

Technology of silicon charged-particle detectors developed at the Institute of Electron Technology (ITE)

NASA Astrophysics Data System (ADS)

Wegrzecka, Iwona; Panas, Andrzej; Bar, Jan; Budzyński, Tadeusz; Grabiec, Piotr; Kozłowski, Roman; Sarnecki, Jerzy; Słysz, Wojciech; Szmigiel, Dariusz; Wegrzecki, Maciej; Zaborowski, Michał

2013-07-01

The paper discusses the technology of silicon charged-particle detectors developed at the Institute of Electron Technology (ITE). The developed technology enables the fabrication of both planar and epiplanar p+-ν-n+ detector structures with an active area of up to 50 cm2. The starting material for epiplanar structures are silicon wafers with a high-resistivity n-type epitaxial layer ( ν layer - ρ < 3 kΩcm) deposited on a highly doped n+-type substrate (ρ< 0,02Ωcm) developed and fabricated at the Institute of Electronic Materials Technology. Active layer thickness of the epiplanar detectors (νlayer) may range from 10 μm to 150 μm. Imported silicon with min. 5 kΩcm resistivity is used to fabricate planar detectors. Active layer thickness of the planar detectors (ν) layer) may range from 200 μm to 1 mm. This technology enables the fabrication of both discrete and multi-junction detectors (monolithic detector arrays), such as single-sided strip detectors (epiplanar and planar) and double-sided strip detectors (planar). Examples of process diagrams for fabrication of the epiplanar and planar detectors are presented in the paper, and selected technological processes are discussed.

Integrated TiN coated porous silicon supercapacitor with large capacitance per foot print

NASA Astrophysics Data System (ADS)

Grigoras, Kestutis; Grönberg, Leif; Ahopelto, Jouni; Prunnila, Mika

2017-05-01

We have fabricated a micro-supercapacitor with porous silicon electrodes coated with TiN by atomic layer deposition technique. The coating provides an efficient surface passivation and high electrical conductivity of the electrodes, resulting in stable and almost ideal electrochemical double layer capacitor behavior with characteristics comparable to the best carbon based micro-supercapacitors. Stability of the supercapacitor is verified by performing 50 000 voltammetry cycles with high capacitance retention obtained. Silicon microfabrication techniques facilitate integration of both supercapacitor electrodes inside the silicon substrate and, in this work, such in-chip supercapacitor is demonstrated. This approach allows realization of very high capacitance per foot print area. The in-chip micro-supercapacitor can be integrated with energy harvesting elements and can be used in wearable and implantable microdevices.

All-solid-state supercapacitors on silicon using graphene from silicon carbide

DOE Office of Scientific and Technical Information (OSTI.GOV)

Wang, Bei; Ahmed, Mohsin; Iacopi, Francesca, E-mail: f.iacopi@griffith.edu.au

2016-05-02

Carbon-based supercapacitors are lightweight devices with high energy storage performance, allowing for faster charge-discharge rates than batteries. Here, we present an example of all-solid-state supercapacitors on silicon for on-chip applications, paving the way towards energy supply systems embedded in miniaturized electronics with fast access and high safety of operation. We present a nickel-assisted graphitization method from epitaxial silicon carbide on a silicon substrate to demonstrate graphene as a binder-free electrode material for all-solid-state supercapacitors. We obtain graphene electrodes with a strongly enhanced surface area, assisted by the irregular intrusion of nickel into the carbide layer, delivering a typical double-layer capacitancemore » behavior with a specific area capacitance of up to 174 μF cm{sup −2} with about 88% capacitance retention over 10 000 cycles. The fabrication technique illustrated in this work provides a strategic approach to fabricate micro-scale energy storage devices compatible with silicon electronics and offering ultimate miniaturization capabilities.« less

3D-fabrication of tunable and high-density arrays of crystalline silicon nanostructures

NASA Astrophysics Data System (ADS)

Wilbers, J. G. E.; Berenschot, J. W.; Tiggelaar, R. M.; Dogan, T.; Sugimura, K.; van der Wiel, W. G.; Gardeniers, J. G. E.; Tas, N. R.

2018-04-01

In this report, a procedure for the 3D-nanofabrication of ordered, high-density arrays of crystalline silicon nanostructures is described. Two nanolithography methods were utilized for the fabrication of the nanostructure array, viz. displacement Talbot lithography (DTL) and edge lithography (EL). DTL is employed to perform two (orthogonal) resist-patterning steps to pattern a thin Si3N4 layer. The resulting patterned double layer serves as an etch mask for all further etching steps for the fabrication of ordered arrays of silicon nanostructures. The arrays are made by means of anisotropic wet etching of silicon in combination with an isotropic retraction etch step of the etch mask, i.e. EL. The procedure enables fabrication of nanostructures with dimensions below 15 nm and a potential density of 1010 crystals cm-2.

Advanced detectors and signal processing

NASA Technical Reports Server (NTRS)

Greve, D. W.; Rasky, P. H. L.; Kryder, M. H.

1986-01-01

Continued progress is reported toward development of a silicon on garnet technology which would allow fabrication of advanced detection and signal processing circuits on bubble memories. The first integrated detectors and propagation patterns have been designed and incorporated on a new mask set. In addition, annealing studies on spacer layers are performed. Based on those studies, a new double layer spacer is proposed which should reduce contamination of the silicon originating in the substrate. Finally, the magnetic sensitivity of uncontaminated detectors from the last lot of wafers is measured. The measured sensitivity is lower than anticipated but still higher than present magnetoresistive detectors.

Synthesis of Novel Double-Layer Nanostructures of SiC–WOxby a Two Step Thermal Evaporation Process

PubMed Central

2009-01-01

A novel double-layer nanostructure of silicon carbide and tungsten oxide is synthesized by a two-step thermal evaporation process using NiO as the catalyst. First, SiC nanowires are grown on Si substrate and then high density W18O49nanorods are grown on these SiC nanowires to form a double-layer nanostructure. XRD and TEM analysis revealed that the synthesized nanostructures are well crystalline. The growth of W18O49nanorods on SiC nanowires is explained on the basis of vapor–solid (VS) mechanism. The reasonably better turn-on field (5.4 V/μm) measured from the field emission measurements suggest that the synthesized nanostructures could be used as potential field emitters. PMID:20596292

The fabrication of a double-layer atom chip with through silicon vias for an ultra-high-vacuum cell

NASA Astrophysics Data System (ADS)

Chuang, Ho-Chiao; Lin, Yun-Siang; Lin, Yu-Hsin; Huang, Chi-Sheng

2014-04-01

This study presents a double-layer atom chip that provides users with increased diversity in the design of the wire patterns and flexibility in the design of the magnetic field. It is more convenient for use in atomic physics experiments. A negative photoresist, SU-8, was used as the insulating layer between the upper and bottom copper wires. The electrical measurement results show that the upper and bottom wires with a width of 100 µm can sustain a 6 A current without burnout. Another focus of this study is the double-layer atom chips integrated with the through silicon via (TSV) technique, and anodically bonded to a Pyrex glass cell, which makes it a desired vacuum chamber for atomic physics experiments. Thus, the bonded glass cell not only significantly reduces the overall size of the ultra-high-vacuum (UHV) chamber but also conducts the high current from the backside to the front side of the atom chip via the TSV under UHV (9.5 × 10-10 Torr). The TSVs with a diameter of 70 µm were etched through by the inductively coupled plasma ion etching and filled by the bottom-up copper electroplating method. During the anodic bonding process, the electroplated copper wires and TSVs on atom chips also need to pass the examination of the required bonding temperature of 250 °C, under an applied voltage of 1000 V. Finally, the UHV test of the double-layer atom chips with TSVs at room temperature can be reached at 9.5 × 10-10 Torr, thus satisfying the requirements of atomic physics experiments under an UHV environment.

On the Discontinuity of Polycrystalline Silicon Thin Films Realized by Aluminum-Induced Crystallization of PECVD-Deposited Amorphous Si

NASA Astrophysics Data System (ADS)

Pan, Qingtao; Wang, Tao; Yan, Hui; Zhang, Ming; Mai, Yaohua

2017-04-01

Crystallization of glass/Aluminum (50, 100, 200 nm) /hydrogenated amorphous silicon (a-Si:H) (50, 100, 200 nm) samples by Aluminum-induced crystallization (AIC) is investigated in this article. After annealing and wet etching, we found that the continuity of the polycrystalline silicon (poly-Si) thin films was strongly dependent on the double layer thicknesses. Increasing the a-Si:H/Al layer thickness ratio would improve the film microcosmic continuity. However, too thick Si layer might cause convex or peeling off during annealing. Scanning electron microscopy (SEM) and Energy Dispersive X-ray spectroscopy (EDX) are introduced to analyze the process of the peeling off. When the thickness ratio of a-Si:H/Al layer is around 1 to 1.5 and a-Si:H layer is less than 200 nm, the poly-Si film has a good continuity. Hall measurements are introduced to determine the electrical properties. Raman spectroscopy and X-ray diffraction (XRD) results show that the poly-Si film is completely crystallized and has a preferential (111) orientation.

Efficient semitransparent perovskite solar cells for 23.0%-efficiency perovskite/silicon four-terminal tandem cells

DOE PAGES

Chen, Bo; Bai, Yang; Yu, Zhengshan; ...

2016-07-19

Here, we have investigated semi-transparent perovskite solar cells and infrared enhanced silicon heterojunction cells for high-efficiency tandem devices. A semi-transparent metal electrode with good electrical conductivity and optical transparency has been fabricated by thermal evaporation of 7 nm of Au onto a 1-nm-thick Cu seed layer. For this electrode to reach its full potential, MAPbI3 thin films were formed by a modified one-step spin-coating method, resulting in a smooth layer that allowed the subsequent metal thin film to remain continuous. The fabricated semi-transparent perovskite solar cells demonstrated 16.5% efficiency under one-sun illumination, and were coupled with infrared-enhanced silicon heterojunction cellsmore » tuned specifically for perovskite/Si tandem devices. A double-layer antireflection coating at the front side and MgF2 reflector at rear side of the silicon heterojunction cells reduced parasitic absorption of near-infrared light, leading to 6.5% efficiency after filtering with a perovskite device and 23.0% summed efficiency for the perovskite/Si tandem device.« less

Efficient semitransparent perovskite solar cells for 23.0%-efficiency perovskite/silicon four-terminal tandem cells

DOE Office of Scientific and Technical Information (OSTI.GOV)

Chen, Bo; Bai, Yang; Yu, Zhengshan

Here, we have investigated semi-transparent perovskite solar cells and infrared enhanced silicon heterojunction cells for high-efficiency tandem devices. A semi-transparent metal electrode with good electrical conductivity and optical transparency has been fabricated by thermal evaporation of 7 nm of Au onto a 1-nm-thick Cu seed layer. For this electrode to reach its full potential, MAPbI3 thin films were formed by a modified one-step spin-coating method, resulting in a smooth layer that allowed the subsequent metal thin film to remain continuous. The fabricated semi-transparent perovskite solar cells demonstrated 16.5% efficiency under one-sun illumination, and were coupled with infrared-enhanced silicon heterojunction cellsmore » tuned specifically for perovskite/Si tandem devices. A double-layer antireflection coating at the front side and MgF2 reflector at rear side of the silicon heterojunction cells reduced parasitic absorption of near-infrared light, leading to 6.5% efficiency after filtering with a perovskite device and 23.0% summed efficiency for the perovskite/Si tandem device.« less

Sol-Gel Deposited Double Layer TiO₂ and Al₂O₃ Anti-Reflection Coating for Silicon Solar Cell.

PubMed

Jung, Jinsu; Jannat, Azmira; Akhtar, M Shaheer; Yang, O-Bong

2018-02-01

In this work, the deposition of double layer ARC on p-type Si solar cells was carried out by simple spin coating using sol-gel derived Al2O3 and TiO2 precursors for the fabrication of crystalline Si solar cells. The first ARC layer was created by freshly prepared sol-gel derived Al2O3 precursor using spin coating technique and then second ARC layer of TiO2 was deposited with sol-gel derived TiO2 precursor, which was finally annealed at 400 °C. The double layer Al2O3/TiO2 ARC on Si wafer exhibited the low average reflectance of 4.74% in the wavelength range of 400 and 1000 nm. The fabricated solar cells based on double TiO2/Al2O3 ARC attained the conversion efficiency of ~13.95% with short circuit current (JSC) of 35.27 mA/cm2, open circuit voltage (VOC) of 593.35 mV and fill factor (FF) of 66.67%. Moreover, the fabricated solar cells presented relatively low series resistance (Rs) as compared to single layer ARCs, resulting in the high VOC and FF.

Double-walled silicon nanotubes: an ab initio investigation

NASA Astrophysics Data System (ADS)

Lima, Matheus P.

2018-02-01

The synthesis of silicon nanotubes realized in the last decade demonstrates multi-walled tubular structures consisting of Si atoms in {{sp}}2 and the {{sp}}3 hybridizations. However, most of the theoretical models were elaborated taking as the starting point {{sp}}2 structures analogous to carbon nanotubes. These structures are unfavorable due to the natural tendency of the Si atoms to undergo {{sp}}3. In this work, through ab initio simulations based on density functional theory, we investigated double-walled silicon nanotubes proposing layered tubes possessing most of the Si atoms in an {{sp}}3 hybridization, and with few {{sp}}2 atoms localized at the outer wall. The lowest-energy structures have metallic behavior. Furthermore, the possibility to tune the band structure with the application of a strain was demonstrated, inducing a metal-semiconductor transition. Thus, the behavior of silicon nanotubes differs significantly from carbon nanotubes, and the main source of the differences is the distortions in the lattice associated with the tendency of Si to make four chemical bonds.

Carrier transport and sensitivity issues in heterojunction with intrinsic thin layer solar cells on N-type crystalline silicon: A computer simulation study

NASA Astrophysics Data System (ADS)

Rahmouni, M.; Datta, A.; Chatterjee, P.; Damon-Lacoste, J.; Ballif, C.; Roca i Cabarrocas, P.

2010-03-01

Heterojunction with intrinsic thin layer or "HIT" solar cells are considered favorable for large-scale manufacturing of solar modules, as they combine the high efficiency of crystalline silicon (c-Si) solar cells, with the low cost of amorphous silicon technology. In this article, based on experimental data published by Sanyo, we simulate the performance of a series of HIT cells on N-type crystalline silicon substrates with hydrogenated amorphous silicon (a-Si:H) emitter layers, to gain insight into carrier transport and the general functioning of these devices. Both single and double HIT structures are modeled, beginning with the initial Sanyo cells having low open circuit voltages but high fill factors, right up to double HIT cells exhibiting record values for both parameters. The one-dimensional numerical modeling program "Amorphous Semiconductor Device Modeling Program" has been used for this purpose. We show that the simulations can correctly reproduce the electrical characteristics and temperature dependence for a set of devices with varying I-layer thickness. Under standard AM1.5 illumination, we show that the transport is dominated by the diffusion mechanism, similar to conventional P/N homojunction solar cells, and tunneling is not required to describe the performance of state-of-the art devices. Also modeling has been used to study the sensitivity of N-c-Si HIT solar cell performance to various parameters. We find that the solar cell output is particularly sensitive to the defect states on the surface of the c-Si wafer facing the emitter, to the indium tin oxide/P-a-Si:H front contact barrier height and to the band gap and activation energy of the P-a-Si:H emitter, while the I-a-Si:H layer is necessary to achieve both high Voc and fill factor, as it passivates the defects on the surface of the c-Si wafer. Finally, we describe in detail for most parameters how they affect current transport and cell properties.

Optical performance of hybrid porous silicon-porous alumina multilayers

NASA Astrophysics Data System (ADS)

Cencha, L. G.; Antonio Hernández, C.; Forzani, L.; Urteaga, R.; Koropecki, R. R.

2018-05-01

In this work, we study the optical response of structures involving porous silicon and porous alumina in a multi-layered hybrid structure. We performed a rational design of the optimal sequence necessary to produce a high transmission and selective filter, with potential applications in chemical and biosensors. The combination of these porous materials can be used to exploit its distinguishing features, i.e., high transparency of alumina and high refractive index of porous silicon. We assembled hybrid microcavities with a central porous alumina layer between two porous silicon Bragg reflectors. In this way, we constructed a Fabry-Perot resonator with high reflectivity and low absorption that improves the quality of the filter compared to a microcavity built only with porous silicon or porous alumina. We explored a simpler design in which one of the Bragg reflectors is replaced by the aluminium that remains bound to the alumina after its fabrication. We theoretically explored the potential of the proposal and its limitations when considering the roughness of the layers. We found that the quality of a microcavity made entirely with porous silicon shows a limit in the visible range due to light absorption. This limitation is overcome in the hybrid scheme, with the roughness of the layers determining the ultimate quality. Q-factors of 220 are experimentally obtained for microcavities supported on aluminium, while Q-factors around 600 are reached for microcavities with double Bragg reflectors, centred at 560 nm. This represents a four-fold increase with respect to the optimal porous silicon microcavity at this wavelength.

Electrical Double Layer-Induced Ion Surface Accumulation for Ultrasensitive Refractive Index Sensing with Nanostructured Porous Silicon Interferometers.

PubMed

Mariani, Stefano; Strambini, Lucanos Marsilio; Barillaro, Giuseppe

2018-03-23

Herein, we provide the first experimental evidence on the use of electrical double layer (EDL)-induced accumulation of charged ions (using both Na + and K + ions in water as the model) onto a negatively charged nanostructured surface (e.g., thermally growth SiO 2 )-Ion Surface Accumulation, ISA-as a means of improving performance of nanostructured porous silicon (PSi) interferometers for optical refractometric applications. Nanostructured PSi interferometers are very promising optical platforms for refractive index sensing due to PSi huge specific surface (hundreds of m 2 per gram) and low preparation cost (less than $0.01 per 8 in. silicon wafer), though they have shown poor resolution ( R) and detection limit (DL) (on the order of 10 -4 -10 -5 RIU) compared to other plasmonic and photonic platforms ( R and DL on the order of 10 -7 -10 -8 RIU). This can be ascribed to both low sensitivity and high noise floor of PSi interferometers when bulk refractive index variation of the solution infiltrating the nanopores either approaches or is below 10 -4 RIU. Electrical double layer-induced ion surface accumulation (EDL-ISA) on oxidized PSi interferometers allows the interferometer output signal (spectral interferogram) to be impressively amplified at bulk refractive index variation below 10 -4 RIU, increasing, in turn, sensitivity up to 2 orders of magnitude and allowing reliable measurement of refractive index variations to be carried out with both DL and R of 10 -7 RIU. This represents a 250-fold-improvement (at least) with respect to the state-of-the-art literature on PSi refractometers and pushes PSi interferometer performance to that of state-of-the-art ultrasensitive photonics/plasmonics refractive index platforms.

A precision device needs precise simulation: Software description of the CBM Silicon Tracking System

NASA Astrophysics Data System (ADS)

Malygina, Hanna; Friese, Volker; CBM Collaboration

2017-10-01

Precise modelling of detectors in simulations is the key to the understanding of their performance, which, in turn, is a prerequisite for the proper design choice and, later, for the achievement of valid physics results. In this report, we describe the implementation of the Silicon Tracking System (STS), the main tracking device of the CBM experiment, in the CBM software environment. The STS makes uses of double-sided silicon micro-strip sensors with double metal layers. We present a description of transport and detector response simulation, including all relevant physical effects like charge creation and drift, charge collection, cross-talk and digitization. Of particular importance and novelty is the description of the time behaviour of the detector, since its readout will not be externally triggered but continuous. We also cover some aspects of local reconstruction, which in the CBM case has to be performed in real-time and thus requires high-speed algorithms.

Theoretical Study of Monolayer and Double-Layer Waveguide Love Wave Sensors for Achieving High Sensitivity.

PubMed

Li, Shuangming; Wan, Ying; Fan, Chunhai; Su, Yan

2017-03-22

Love wave sensors have been widely used for sensing applications. In this work, we introduce the theoretical analysis of the monolayer and double-layer waveguide Love wave sensors. The velocity, particle displacement and energy distribution of Love waves were analyzed. Using the variations of the energy repartition, the sensitivity coefficients of Love wave sensors were calculated. To achieve a higher sensitivity coefficient, a thin gold layer was added as the second waveguide on top of the silicon dioxide (SiO₂) waveguide-based, 36 degree-rotated, Y-cut, X-propagating lithium tantalate (36° YX LiTaO₃) Love wave sensor. The Love wave velocity was significantly reduced by the added gold layer, and the flow of wave energy into the waveguide layer from the substrate was enhanced. By using the double-layer structure, almost a 72-fold enhancement in the sensitivity coefficient was achieved compared to the monolayer structure. Additionally, the thickness of the SiO₂ layer was also reduced with the application of the gold layer, resulting in easier device fabrication. This study allows for the possibility of designing and realizing robust Love wave sensors with high sensitivity and a low limit of detection.

Gate protective device for SOS array

NASA Technical Reports Server (NTRS)

Meyer, J. E., Jr.; Scott, J. H.

1972-01-01

Protective gate device consisting of alternating heavily doped n(+) and p(+) diffusions eliminates breakdown voltages in silicon oxide on sapphire arrays caused by electrostatic discharge from person or equipment. Diffusions are easily produced during normal double epitaxial processing. Devices with nine layers had 27-volt breakdown.

Analysis of multiple internal reflections in a parallel aligned liquid crystal on silicon SLM.

PubMed

Martínez, José Luis; Moreno, Ignacio; del Mar Sánchez-López, María; Vargas, Asticio; García-Martínez, Pascuala

2014-10-20

Multiple internal reflection effects on the optical modulation of a commercial reflective parallel-aligned liquid-crystal on silicon (PAL-LCoS) spatial light modulator (SLM) are analyzed. The display is illuminated with different wavelengths and different angles of incidence. Non-negligible Fabry-Perot (FP) effect is observed due to the sandwiched LC layer structure. A simplified physical model that quantitatively accounts for the observed phenomena is proposed. It is shown how the expected pure phase modulation response is substantially modified in the following aspects: 1) a coupled amplitude modulation, 2) a non-linear behavior of the phase modulation, 3) some amount of unmodulated light, and 4) a reduction of the effective phase modulation as the angle of incidence increases. Finally, it is shown that multiple reflections can be useful since the effect of a displayed diffraction grating is doubled on a beam that is reflected twice through the LC layer, thus rendering gratings with doubled phase modulation depth.

Record high efficiency of screen-printed silicon aluminum back surface field solar cell: 20.29%

NASA Astrophysics Data System (ADS)

Kim, Ki Hyung; Park, Chang Sub; Doo Lee, Jae; Youb Lim, Jong; Yeon, Je Min; Kim, Il Hwan; Lee, Eun Joo; Cho, Young Hyun

2017-08-01

We have achieved a record high cell efficiency of 20.29% for an industrial 6-in. p-type monocrystalline silicon solar cell with a full-area aluminum back surface field (Al-BSF) by simply modifying the cell structure and optimizing the process with the existing cell production line. The cell efficiency was independently confirmed by the Solar Energy Research Institute of Singapore (SERIS). To increase the cell efficiency, for example, in four busbars, double printing, a lightly doped emitter with a sheet resistance of 90 to 100 Ω/□, and front surface passivation by using silicon oxynitride (SiON) on top of a silicon nitride (SiN x ) antireflection layer were adopted. To optimize front side processing, PC1D simulation was carried out prior to cell fabrication. The resulting efficiency gain is 0.64% compared with that in the reference cells with three busbars, a single antireflection coating layer, and a low-sheet-resistance emitter.

Internal alignment and position resolution of the silicon tracker of DAMPE determined with orbit data

NASA Astrophysics Data System (ADS)

Tykhonov, A.; Ambrosi, G.; Asfandiyarov, R.; Azzarello, P.; Bernardini, P.; Bertucci, B.; Bolognini, A.; Cadoux, F.; D'Amone, A.; De Benedittis, A.; De Mitri, I.; Di Santo, M.; Dong, Y. F.; Duranti, M.; D'Urso, D.; Fan, R. R.; Fusco, P.; Gallo, V.; Gao, M.; Gargano, F.; Garrappa, S.; Gong, K.; Ionica, M.; La Marra, D.; Lei, S. J.; Li, X.; Loparco, F.; Marsella, G.; Mazziotta, M. N.; Peng, W. X.; Qiao, R.; Salinas, M. M.; Surdo, A.; Vagelli, V.; Vitillo, S.; Wang, H. Y.; Wang, J. Z.; Wang, Z. M.; Wu, D.; Wu, X.; Zhang, F.; Zhang, J. Y.; Zhao, H.; Zimmer, S.

2018-06-01

The DArk Matter Particle Explorer (DAMPE) is a space-borne particle detector designed to probe electrons and gamma-rays in the few GeV to 10 TeV energy range, as well as cosmic-ray proton and nuclei components between 10 GeV and 100 TeV. The silicon-tungsten tracker-converter is a crucial component of DAMPE. It allows the direction of incoming photons converting into electron-positron pairs to be estimated, and the trajectory and charge (Z) of cosmic-ray particles to be identified. It consists of 768 silicon micro-strip sensors assembled in 6 double layers with a total active area of 6.6 m2. Silicon planes are interleaved with three layers of tungsten plates, resulting in about one radiation length of material in the tracker. Internal alignment parameters of the tracker have been determined on orbit, with non-showering protons and helium nuclei. We describe the alignment procedure and present the position resolution and alignment stability measurements.

Evaluation of double-layer density modulated Si thin films as Li-ion battery anodes

NASA Astrophysics Data System (ADS)

Taha Demirkan, Muhammed; Yurukcu, Mesut; Dursun, Burcu; Demir-Cakan, Rezan; Karabacak, Tansel

2017-10-01

Double-layer density modulated silicon thin films which contain alternating low and high density Si film layers were fabricated by magnetron sputtering. Two different samples consisting of alternating layers of high-density/low-density and low-density/high-density Si thin film layers were investigated as anode electrodes in Li-ion batteries. Si thin film in which the terminating layer at the top is low density Si layer-quoted as low-density/high-density film (LD/HD)- exhibits better performance than Si thin film that has high density layer at the top, -quoted as high-density/low-density (HD/LD). A highly stabilized cycling performance with the specific charge capacities of 2000 mAh g-1 at the 150th cycle at C/2 current density, and 1200 mAh g-1 at the 240th cycle at 10 C current density were observed for the LD/HD Si anode in the presence of fluoroethylene carbonate (FEC) electrolyte additive.

Preliminary Study on Biosynthesis of Bacterial Nanocellulose Tubes in a Novel Double-Silicone-Tube Bioreactor for Potential Vascular Prosthesis.

PubMed

Hong, Feng; Wei, Bin; Chen, Lin

2015-01-01

Bacterial nanocellulose (BNC) has demonstrated a tempting prospect for applications in substitute of small blood vessels. However, present technology is inefficient in production and BNC tubes have a layered structure that may bring danger after implanting. Double oxygen-permeable silicone tubes in different diameters were therefore used as a tube-shape mold and also as oxygenated supports to construct a novel bioreactor for production of the tubular BNC materials. Double cannula technology was used to produce tubular BNC via cultivations with Acetobacter xylinum, and Kombucha, a symbiosis of acetic acid bacteria and yeasts. The results indicated that Kombucha gave higher yield and productivity of BNC than A. xylinum. Bacterial nanocellulose was simultaneously synthesized both on the inner surface of the outer silicone tube and on the outer surface of the inner silicone tube. Finally, the nano BNC fibrils from two directions formed a BNC tube with good structural integrity. Scanning electron microscopy inspection showed that the tubular BNC had a multilayer structure in the beginning but finally it disappeared and an intact BNC tube formed. The mechanical properties of BNC tubes were comparable with the reported value in literatures, demonstrating a great potential in vascular implants or in functional substitutes in biomedicine.

Preliminary Study on Biosynthesis of Bacterial Nanocellulose Tubes in a Novel Double-Silicone-Tube Bioreactor for Potential Vascular Prosthesis

PubMed Central

Wei, Bin; Chen, Lin

2015-01-01

Bacterial nanocellulose (BNC) has demonstrated a tempting prospect for applications in substitute of small blood vessels. However, present technology is inefficient in production and BNC tubes have a layered structure that may bring danger after implanting. Double oxygen-permeable silicone tubes in different diameters were therefore used as a tube-shape mold and also as oxygenated supports to construct a novel bioreactor for production of the tubular BNC materials. Double cannula technology was used to produce tubular BNC via cultivations with Acetobacter xylinum, and Kombucha, a symbiosis of acetic acid bacteria and yeasts. The results indicated that Kombucha gave higher yield and productivity of BNC than A. xylinum. Bacterial nanocellulose was simultaneously synthesized both on the inner surface of the outer silicone tube and on the outer surface of the inner silicone tube. Finally, the nano BNC fibrils from two directions formed a BNC tube with good structural integrity. Scanning electron microscopy inspection showed that the tubular BNC had a multilayer structure in the beginning but finally it disappeared and an intact BNC tube formed. The mechanical properties of BNC tubes were comparable with the reported value in literatures, demonstrating a great potential in vascular implants or in functional substitutes in biomedicine. PMID:26090420

Novel mid-infrared silicon/germanium detector concepts

NASA Astrophysics Data System (ADS)

Presting, Hartmut; Konle, Johannes; Hepp, Markus; Kibbel, Horst; Thonke, Klaus; Sauer, Rolf; Corbin, Elizabeth A.; Jaros, Milan

2000-10-01

Highly p-doped silicon/silicon-germanium (Si/SiGe) quantum well (QW) structures are grown by molecular beam epitaxy on double-sided polished (100)Si substrates for mid-IR (3 to 5 micrometers and 8 to 12 micrometers ) detection. The samples are characterized by secondary ion mass spectroscopy, x-ray diffraction, and absorption measurements. Single mesa detectors are fabricated as well as large-area focal plane arrays with 256 X 256 pixels using standard Si integrated processing techniques. The detectors, based on heterointernal photo-emission (HIP) of photogenerated holes from a heavily p-doped (p++ approximately 5 X 1020 cm-3) SiGe QW into an undoped silicon layer, operate at 77 K. Various novel designs of the SiGe HIP's such as Ge- and B-grading, double- and multi-wells, are realized; in addition, thin doping setback layers between the highly doped well and the undoped Si layer are introduced. The temperature dependence of dark currents and photocurrents are measured up to 225 K. In general, we observe broad photoresponse curves with peak external quantum efficiencies, up to (eta) ext approximately 0.5% at 77 K and 4(mu) , detectivities up to 8 X 1011 cm(root)Hz/W are obtained. We demonstrate that by varying the thickness, Ge content, and doping level of the single- and the multi-QWs of SiGe HIP detectors, the photoresponse peak and the cutoff of the spectrum can be tuned over a wide wavelength range. The epitaxial versatility of the Si/SiGe system enables a tailoring of the photoresponse spectrum which demonstrates the advantages of the SiGe system in comparison over commercially used silicide detectors.

Characterizing the surface charge of synthetic nanomembranes by the streaming potential method

PubMed Central

Datta, Subhra; Conlisk, A. T.; Kanani, Dharmesh M.; Zydney, Andrew L.; Fissell, William H.; Roy, Shuvo

2010-01-01

The inference of the surface charge of polyethylene glycol (PEG)-coated and uncoated silicon membranes with nanoscale pore sizes from streaming potential measurements in the presence of finite electric double layer (EDL) effects is studied theoretically and experimentally. The developed theoretical model for inferring the pore wall surface charge density from streaming potential measurements is applicable to arbitrary pore cross-sectional shapes and accounts for the effect of finite salt concentration on the ionic mobilities and the thickness of the deposited layer of PEG. Theoretical interpretation of the streaming potential data collected from silicon membranes having nanoscale pore sizes, with/without pore wall surface modification with PEG, indicates that finite electric double layer (EDL) effects in the pore-confined electrolyte significantly affect the interpretation of the membrane charge and that surface modification with PEG leads to a reduction in the pore wall surface charge density. The theoretical model is also used to study the relative significance of the following uniquely nanoscale factors affecting the interpretation of streaming potential in moderate to strongly charged pores: altered net charge convection by applied pressure differentials, surface-charge effects on ionic conduction, and electroosmotic convection of charges. PMID:20462592

Epitaxial growth of YBa2Cu3O7 - delta films on oxidized silicon with yttria- and zirconia-based buffer layers

NASA Astrophysics Data System (ADS)

Pechen, E. V.; Schoenberger, R.; Brunner, B.; Ritzinger, S.; Renk, K. F.; Sidorov, M. V.; Oktyabrsky, S. R.

1993-09-01

A study of epitaxial growth of YBa2Cu3O7-δ films on oxidized Si with yttria- and zirconia-based buffer layers is reported. Using substrates with either SiO2 free or naturally oxidized (100) surfaces of Si it was found that a thin SiO2 layer on top of the Si favors high-quality superconducting film formation. Compared to yttria-stabilized ZrO2 (YSZ) single layers, YSZY2O3 double and YSZ/Y2O3YSZ triple layers allows the deposition of thin YBa2Cu3O7-δ films with improved properties including reduced aging effects. In epitaxial YBa2Cu3O7-δ films grown on the double buffer layers a critical temperature Tc(R=0)=89.5 K and critical current densities of 3.5×106 A/cm2 at 77 K and 1×107 A/cm2 at 66 K were reached.

Optimizing pentacene thin-film transistor performance: Temperature and surface condition induced layer growth modification.

PubMed

Lassnig, R; Hollerer, M; Striedinger, B; Fian, A; Stadlober, B; Winkler, A

2015-11-01

In this work we present in situ electrical and surface analytical, as well as ex situ atomic force microscopy (AFM) studies on temperature and surface condition induced pentacene layer growth modifications, leading to the selection of optimized deposition conditions and entailing performance improvements. We prepared p ++ -silicon/silicon dioxide bottom-gate, gold bottom-contact transistor samples and evaluated the pentacene layer growth for three different surface conditions (sputtered, sputtered + carbon and unsputtered + carbon) at sample temperatures during deposition of 200 K, 300 K and 350 K. The AFM investigations focused on the gold contacts, the silicon dioxide channel region and the highly critical transition area. Evaluations of coverage dependent saturation mobilities, threshold voltages and corresponding AFM analysis were able to confirm that the first 3-4 full monolayers contribute to the majority of charge transport within the channel region. At high temperatures and on sputtered surfaces uniform layer formation in the contact-channel transition area is limited by dewetting, leading to the formation of trenches and the partial development of double layer islands within the channel region instead of full wetting layers. By combining the advantages of an initial high temperature deposition (well-ordered islands in the channel) and a subsequent low temperature deposition (continuous film formation for low contact resistance) we were able to prepare very thin (8 ML) pentacene transistors of comparably high mobility.

Optimizing pentacene thin-film transistor performance: Temperature and surface condition induced layer growth modification

PubMed Central

Lassnig, R.; Hollerer, M.; Striedinger, B.; Fian, A.; Stadlober, B.; Winkler, A.

2015-01-01

In this work we present in situ electrical and surface analytical, as well as ex situ atomic force microscopy (AFM) studies on temperature and surface condition induced pentacene layer growth modifications, leading to the selection of optimized deposition conditions and entailing performance improvements. We prepared p++-silicon/silicon dioxide bottom-gate, gold bottom-contact transistor samples and evaluated the pentacene layer growth for three different surface conditions (sputtered, sputtered + carbon and unsputtered + carbon) at sample temperatures during deposition of 200 K, 300 K and 350 K. The AFM investigations focused on the gold contacts, the silicon dioxide channel region and the highly critical transition area. Evaluations of coverage dependent saturation mobilities, threshold voltages and corresponding AFM analysis were able to confirm that the first 3–4 full monolayers contribute to the majority of charge transport within the channel region. At high temperatures and on sputtered surfaces uniform layer formation in the contact–channel transition area is limited by dewetting, leading to the formation of trenches and the partial development of double layer islands within the channel region instead of full wetting layers. By combining the advantages of an initial high temperature deposition (well-ordered islands in the channel) and a subsequent low temperature deposition (continuous film formation for low contact resistance) we were able to prepare very thin (8 ML) pentacene transistors of comparably high mobility. PMID:26543442

Prototype Compton imager for special nuclear material

NASA Astrophysics Data System (ADS)

Wulf, Eric A.; Phlips, Bernard F.; Kurfess, James D.; Novikova, Elena I.; Fitzgerald, Carrie

2006-05-01

Compton imagers offer a method for passive detection of nuclear material over background radiation. A prototype Compton imager has been constructed using 8 layers of silicon detectors. Each layer consists of a 2×2 array of 2 mm thick cross-strip double-sided silicon detectors with active areas of 5.7 × 5.7 cm2 and 64 strips per side. The detectors are daisy-chained together in the array so that only 256 channels of electronics are needed to read-out each layer of the instrument. This imager is a prototype for a large, high-efficiency Compton imager that will meet operational requirements of Homeland Security for detection of shielded uranium. The instrument can differentiate between different radioisotopes using the reconstructed gamma-ray energy and can also show the location of the emissions with respect to the detector location. Results from the current instrument as well as simulations of the next generation instrument are presented.

Belle II SVD ladder assembly procedure and electrical qualification

NASA Astrophysics Data System (ADS)

Adamczyk, K.; Aihara, H.; Angelini, C.; Aziz, T.; Babu, Varghese; Bacher, S.; Bahinipati, S.; Barberio, E.; Baroncelli, T.; Basith, A. K.; Batignani, G.; Bauer, A.; Behera, P. K.; Bergauer, T.; Bettarini, S.; Bhuyan, B.; Bilka, T.; Bosi, F.; Bosisio, L.; Bozek, A.; Buchsteiner, F.; Casarosa, G.; Ceccanti, M.; Červenkov, D.; Chendvankar, S. R.; Dash, N.; Divekar, S. T.; Doležal, Z.; Dutta, D.; Forti, F.; Friedl, M.; Hara, K.; Higuchi, T.; Horiguchi, T.; Irmler, C.; Ishikawa, A.; Jeon, H. B.; Joo, C.; Kandra, J.; Kang, K. H.; Kato, E.; Kawasaki, T.; Kodyš, P.; Kohriki, T.; Koike, S.; Kolwalkar, M. M.; Kvasnička, P.; Lanceri, L.; Lettenbicher, J.; Mammini, P.; Mayekar, S. N.; Mohanty, G. B.; Mohanty, S.; Morii, T.; Nakamura, K. R.; Natkaniec, Z.; Negishi, K.; Nisar, N. K.; Onuki, Y.; Ostrowicz, W.; Paladino, A.; Paoloni, E.; Park, H.; Pilo, F.; Profeti, A.; Rao, K. K.; Rashevskaya, I.; Rizzo, G.; Rozanska, M.; Sandilya, S.; Sasaki, J.; Sato, N.; Schultschik, S.; Schwanda, C.; Seino, Y.; Shimizu, N.; Stypula, J.; Tanaka, S.; Tanida, K.; Taylor, G. N.; Thalmeier, R.; Thomas, R.; Tsuboyama, T.; Uozumi, S.; Urquijo, P.; Vitale, L.; Volpi, M.; Watanuki, S.; Watson, I. J.; Webb, J.; Wiechczynski, J.; Williams, S.; Würkner, B.; Yamamoto, H.; Yin, H.; Yoshinobu, T.; Belle II SVD Collaboration

2016-07-01

The Belle II experiment at the SuperKEKB asymmetric e+e- collider in Japan will operate at a luminosity approximately 50 times larger than its predecessor (Belle). At its heart lies a six-layer vertex detector comprising two layers of pixelated silicon detectors (PXD) and four layers of double-sided silicon microstrip detectors (SVD). One of the key measurements for Belle II is time-dependent CP violation asymmetry, which hinges on a precise charged-track vertex determination. Towards this goal, a proper assembly of the SVD components with precise alignment ought to be performed and the geometrical tolerances should be checked to fall within the design limits. We present an overview of the assembly procedure that is being followed, which includes the precision gluing of the SVD module components, wire-bonding of the various electrical components, and precision three dimensional coordinate measurements of the jigs used in assembly as well as of the final SVD modules.

A method for polycrystalline silicon delineation applicable to a double-diffused MOS transistor

NASA Technical Reports Server (NTRS)

Halsor, J. L.; Lin, H. C.

1974-01-01

Method is simple and eliminates requirement for unreliable special etchants. Structure is graded in resistivity to prevent punch-through and has very narrow channel length to increase frequency response. Contacts are on top to permit planar integrated circuit structure. Polycrystalline shield will prevent creation of inversion layer in isolated region.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Belokoneva, E. L., E-mail: elbel@geol.msu.ru; Dimitrova, O. V.

A new lead-sodium borosilicate (Pb{sub 4.8}Na{sub 1.2})[Si{sub 8}(Si{sub 1.2}B{sub 0.8})O{sub 25}] (a = 9.5752 and c = 42.565 Angstrom-Sign ; space group R3-barc) is synthesized under hydrothermal conditions, and its crystal structure is determined without preliminary knowledge of the chemical formula. The anionic radical of a new type is a double layer in which one of the three independent Si-tetrahedra contains an isomorphous boron admixture. Its topological relationship with the radicals in the structures of benitoite and langasite, as well as in the structures of lead silicates barisilite and hyttsjoeite, is found based on the block consisting of an octahedronmore » and six tetrahedra. This allows one to consider that the new layer is derived from the hyttsjoeite layer by the replacement of the octahedron with two tetrahedra and the increase of the silicon fraction. Although lead atoms are located between the layers in the intersheet space, they form relatively strong bonds with silicon-oxygen layers. This structural type is a collector of heavy metals.« less

The PAMELA experiment on satellite and its capability in cosmic rays measurements

NASA Astrophysics Data System (ADS)

Adriani, O.; Ambriola, M.; Barbarino, G.; Barbier, L. M.; Bartalucci, S.; Bazilevskaja, G.; Bellotti, R.; Bertazzoni, S.; Bidoli, V.; Boezio, M.; Bogomolov, E.; Bonechi, L.; Bonvicini, V.; Boscherini, M.; Bravar, U.; Cafagna, F.; Campana, D.; Carlson, P.; Casolino, M.; Castellano, M.; Castellini, G.; Christian, E. R.; Ciacio, F.; Circella, M.; D'Alessandro, R.; De Marzo, C. N.; De Pascale, M. P.; Finetti, N.; Furano, G.; Gabbanini, A.; Galper, A. M.; Giglietto, N.; Grandi, M.; Grigorjeva, A.; Guarino, F.; Hof, M.; Koldashov, S. V.; Korotkov, M. G.; Krizmanic, J. F.; Krutkov, S.; Lund, J.; Marangelli, B.; Marino, L.; Menn, W.; Mikhailov, V. V.; Mirizzi, N.; Mitchell, J. W.; Mocchiutti, E.; Moiseev, A. A.; Morselli, A.; Mukhametshin, R.; Ormes, J. F.; Osteria, G.; Ozerov, J. V.; Papini, P.; Pearce, M.; Perego, A.; Piccardi, S.; Picozza, P.; Ricci, M.; Salsano, A.; Schiavon, P.; Scian, G.; Simon, M.; Sparvoli, R.; Spataro, B.; Spillantini, P.; Spinelli, P.; Stephens, S. A.; Stochaj, S. J.; Stozhkov, Y.; Straulino, S.; Streitmatter, R. E.; Taccetti, F.; Tesi, M.; Vacchi, A.; Vannuccini, E.; Vasiljev, G.; Vignoli, V.; Voronov, S. A.; Yurkin, Y.; Zampa, G.; Zampa, N.

2002-02-01

The PAMELA& equipment will be assembled in 2001 and installed on board the Russian satellite Resurs. PAMELA is conceived mainly to study the antiproton and positron fluxes in cosmic rays up to high energy (190GeV for p¯ and 270GeV for e+) and to search antinuclei, up to 30GeV/n, with a sensitivity of 10-7 in the He/He ratio. The PAMELA telescope consists of: a magnetic spectrometer made up of a permanent magnet system equipped with double sided microstrip silicon detectors; a transition radiation detector made up of active layers of proportional straw tubes interleaved with carbon fibre radiators; and a silicon-tungsten imaging calorimeter made up of layers of tungsten absorbers and silicon detector planes. A time-of-flight system and anti-coincidence counters complete the PAMELA equipment. In the past years, tests have been done on each subdetector of PAMELA; the main results are presented and their implications on the anti-particles identification capability in cosmic rays are discussed here.

High-Q Wafer Level Package Based on Modified Tri-Layer Anodic Bonding and High Performance Getter and Its Evaluation for Micro Resonant Pressure Sensor.

PubMed

Wang, Liying; Du, Xiaohui; Wang, Lingyun; Xu, Zhanhao; Zhang, Chenying; Gu, Dandan

2017-03-16

In order to achieve and maintain a high quality factor (high-Q) for the micro resonant pressure sensor, this paper presents a new wafer level package by adopting cross-layer anodic bonding technique of the glass/silicon/silica (GSS) stackable structure and integrated Ti getter. A double-layer structure similar to a silicon-on-insulator (SOI) wafer is formed after the resonant layer and the pressure-sensitive layer are bonded by silicon direct bonding (SDB). In order to form good bonding quality between the pressure-sensitive layer and the glass cap layer, the cross-layer anodic bonding technique is proposed for vacuum package by sputtering Aluminum (Al) on the combination wafer of the pressure-sensitive layer and the resonant layer to achieve electrical interconnection. The model and the bonding effect of this technique are discussed. In addition, in order to enhance the performance of titanium (Ti) getter, the prepared and activation parameters of Ti getter under different sputtering conditions are optimized and discussed. Based on the optimized results, the Ti getter (thickness of 300 nm to 500 nm) is also deposited on the inside of the glass groove by magnetron sputtering to maintain stable quality factor (Q). The Q test of the built testing system shows that the number of resonators with a Q value of more than 10,000 accounts for more than 73% of the total. With an interval of 1.5 years, the Q value of the samples remains almost constant. It proves the proposed cross-layer anodic bonding and getter technique can realize high-Q resonant structure for long-term stable operation.

Structure assignment, electronic properties, and magnetism quenching of endohedrally doped neutral silicon clusters, Si(n)Co (n = 10-12).

PubMed

Li, Yejun; Tam, Nguyen Minh; Claes, Pieterjan; Woodham, Alex P; Lyon, Jonathan T; Ngan, Vu Thi; Nguyen, Minh Tho; Lievens, Peter; Fielicke, André; Janssens, Ewald

2014-09-18

The structures of neutral cobalt-doped silicon clusters have been assigned by a combined experimental and theoretical study. Size-selective infrared spectra of neutral Si(n)Co (n = 10-12) clusters are measured using a tunable IR-UV two-color ionization scheme. The experimental infrared spectra are compared with calculated spectra of low-energy structures predicted at the B3P86 level of theory. It is shown that the Si(n)Co (n = 10-12) clusters have endohedral caged structures, where the silicon frameworks prefer double-layered structures encapsulating the Co atom. Electronic structure analysis indicates that the clusters are stabilized by an ionic interaction between the Co dopant atom and the silicon cage due to the charge transfer from the silicon valence sp orbitals to the cobalt 3d orbitals. Strong hybridization between the Co dopant atom and the silicon host quenches the local magnetic moment on the encapsulated Co atom.

Development of high-efficiency solar cells on silicon web

NASA Technical Reports Server (NTRS)

Meier, D. L.; Greggi, J.; Rai-Choudhury, P.

1986-01-01

Work is reported aimed at identifying and reducing sources of carrier recombination both in the starting web silicon material and in the processed cells. Cross-sectional transmission electron microscopy measurements of several web cells were made and analyzed. The effect of the heavily twinned region on cell efficiency was modeled, and the modeling results compared to measured values for processed cells. The effects of low energy, high dose hydrogen ion implantation on cell efficiency and diffusion length were examined. Cells were fabricated from web silicon known to have a high diffusion length, with a new double layer antireflection coating being applied to these cells. A new contact system, to be used with oxide passivated cells and which greatly reduces the area of contact between metal and silicon, was designed. The application of DLTS measurements to beveled samples was further investigated.

A compact and modular x- and gamma-ray detector with a CsI scintillator and double-readout Silicon Drift Detectors

NASA Astrophysics Data System (ADS)

Campana, R.; Fuschino, F.; Labanti, C.; Marisaldi, M.; Amati, L.; Fiorini, M.; Uslenghi, M.; Baldazzi, G.; Bellutti, P.; Evangelista, Y.; Elmi, I.; Feroci, M.; Ficorella, F.; Frontera, F.; Picciotto, A.; Piemonte, C.; Rachevski, A.; Rashevskaya, I.; Rignanese, L. P.; Vacchi, A.; Zampa, G.; Zampa, N.; Zorzi, N.

2016-07-01

A future compact and modular X and gamma-ray spectrometer (XGS) has been designed and a series of proto- types have been developed and tested. The experiment envisages the use of CsI scintillator bars read out at both ends by single-cell 25 mm2 Silicon Drift Detectors. Digital algorithms are used to discriminate between events absorbed in the Silicon layer (lower energy X rays) and events absorbed in the scintillator crystal (higher energy X rays and -rays). The prototype characterization is shown and the modular design for future experiments with possible astrophysical applications (e.g. for the THESEUS mission proposed for the ESA M5 call) are discussed.

Supercapacitor electrodes based on polyaniline-silicon nanoparticle composite

NASA Astrophysics Data System (ADS)

Liu, Qiang; Nayfeh, Munir H.; Yau, Siu-Tung

A composite material formed by dispersing ultrasmall silicon nanoparticles in polyaniline has been used as the electrode material for supercapacitors. Electrochemical characterization of the composite indicates that the nanoparticles give rise to double-layer capacitance while polyaniline produces pseudocapacitance. The composite shows significantly improved capacitance compared to that of polyaniline. The enhanced capacitance results in high power (220 kW kg -1) and energy-storage (30 Wh kg -1) capabilities of the composite material. A prototype supercapacitor using the composite as the charge storage material has been constructed. The capacitor showed the enhanced capacitance and good device stability during 1000 charging/discharging cycles.

Improved Epitaxy and Surface Morphology in YBa2Cu3Oy Thin Films Grown on Double Buffered Si Wafers

NASA Astrophysics Data System (ADS)

Gao, J.; Kang, L.; Wong, H. Y.; Cheung, Y. L.; Yang, J.

Highly epitaxial thin films of YBCO have been obtained on silicon wafers using a Eu2CuO4/YSZ (yttrium-stabilized ZrO2) double buffer. Our results showed that application of such a double buffer can significantly enhance the epitaxy of grown YBCO. It also leads to an excellent surface morphology. The average surface roughness was found less than 5 nm in a large range. The results of X-ray small angle reflection and positron spectroscpy demonstrate a very clear and flat interface between YBCO and buffer layers. The Eu2CuO4/YSZ double buffer could be promising for coating high-TC superconducting films on various reactive substrates.

Grafting cavitands on the Si(100) surface.

PubMed

Condorelli, Guglielmo G; Motta, Alessandro; Favazza, Maria; Fragalà, Ignazio L; Busi, Marco; Menozzi, Edoardo; Dalcanale, Enrico; Cristofolini, Luigi

2006-12-19

Cavitand molecules having double bond terminated alkyl chains and different bridging groups at the upper rim have been grafted on H-terminated Si(100) surface via photochemical hydrosilylation of the double bonds. Pure and mixed monolayers have been obtained from mesitylene solutions of either pure cavitand or cavitand/1-octene mixtures. Angle resolved high-resolution X-ray photoelectron spectroscopy has been used as the main tool for the monolayer characterization. The cavitand decorated surface consists of Si-C bonded layers with the upper rim at the top of the layer. Grafting of pure cavitands leads to not-well-packed layers, which are not able to efficiently passivate the Si(100) surface. By contrast, monolayers obtained from cavitand/1-octene mixtures consist of well-packed layers since they prevent silicon oxidation after aging. AFM measurements showed that these monolayers have a structured topography, with objects protruding from the Si(100) surface with average heights compatible with the expected ones for cavitand molecules.

Formation of multiple levels of porous silicon for buried insulators and conductors in silicon device technologies

DOEpatents

Blewer, Robert S.; Gullinger, Terry R.; Kelly, Michael J.; Tsao, Sylvia S.

1991-01-01

A method of forming a multiple level porous silicon substrate for semiconductor integrated circuits including anodizing non-porous silicon layers of a multi-layer silicon substrate to form multiple levels of porous silicon. At least one porous silicon layer is then oxidized to form an insulating layer and at least one other layer of porous silicon beneath the insulating layer is metallized to form a buried conductive layer. Preferably the insulating layer and conductive layer are separated by an anodization barrier formed of non-porous silicon. By etching through the anodization barrier and subsequently forming a metallized conductive layer, a fully or partially insulated buried conductor may be fabricated under single crystal silicon.

Detection of subsurface core-level shifts in Si 2p core-level photoemission from Si(111)-(1x1):As

DOE Office of Scientific and Technical Information (OSTI.GOV)

Paggel, J.J.; Hasselblatt, M.; Horn, K.

1997-04-01

The (7 x 7) reconstruction of the Si(111) surface arises from a lowering energy through the reduction of the number of dangling bonds. This reconstruction can be removed by the adsorption of atoms such as hydrogen which saturate the dangling bonds, or by the incorporation of atoms, such as arsenic which, because of the additional electron it possesses, can form three bonds and a nonreactive lone pair orbital from the remaining two electrons. Core and valence level photoemission and ion scattering data have shown that the As atoms replace the top silicon atoms. Previous core level spectra were interpreted inmore » terms of a bulk and a single surface doublet. The authors present results demonstrate that the core level spectrum contains two more lines. The authors assign these to subsurface silicon layers which also experience changes in the charge distribution when a silicon atom is replaced by an arsenic atom. Subsurface core level shifts are not unexpected since the modifications of the electronic structure and/or of photohole screening are likely to decay into the bulk and not just to affect the top-most substrate atoms. The detection of subsurface components suggests that the adsorption of arsenic leads to charge flow also in the second double layer of the Si(111) surface. In view of the difference in atomic radius between As and Si, it was suggested that the (1 x 1): As surface is strained. The presence of charge rearrangement up to the second double layer implies that the atomic coordinates also exhibit deviations from their ideal Si(111) counterparts, which might be detected through a LEED I/V or photoelectron diffraction analysis.« less

In-depth analysis and modelling of self-heating effects in nanometric DGMOSFETs

NASA Astrophysics Data System (ADS)

Roldán, J. B.; González, B.; Iñiguez, B.; Roldán, A. M.; Lázaro, A.; Cerdeira, A.

2013-01-01

Self-heating effects (SHEs) in nanometric symmetrical double-gate MOSFETs (DGMOSFETs) have been analysed. An equivalent thermal circuit for the transistors has been developed to characterise thermal effects, where the temperature and thickness dependency of the thermal conductivity of the silicon and oxide layers within the devices has been included. The equivalent thermal circuit is consistent with simulations using a commercial technology computer-aided design (TCAD) tool (Sentaurus by Synopsys). In addition, a model for DGMOSFETs has been developed where SHEs have been considered in detail, taking into account the temperature dependence of the low-field mobility, saturation velocity, and inversion charge. The model correctly reproduces Sentaurus simulation data for the typical bias range used in integrated circuits. Lattice temperatures predicted by simulation are coherently reproduced by the model for varying silicon layer geometry.

Buried oxide layer in silicon

DOEpatents

Sadana, Devendra Kumar; Holland, Orin Wayne

2001-01-01

A process for forming Silicon-On-Insulator is described incorporating the steps of ion implantation of oxygen into a silicon substrate at elevated temperature, ion implanting oxygen at a temperature below 200.degree. C. at a lower dose to form an amorphous silicon layer, and annealing steps to form a mixture of defective single crystal silicon and polycrystalline silicon or polycrystalline silicon alone and then silicon oxide from the amorphous silicon layer to form a continuous silicon oxide layer below the surface of the silicon substrate to provide an isolated superficial layer of silicon. The invention overcomes the problem of buried isolated islands of silicon oxide forming a discontinuous buried oxide layer.

Polydopamine-coated, nitrogen-doped, hollow carbon-sulfur double-layered core-shell structure for improving lithium-sulfur batteries.

PubMed

Zhou, Weidong; Xiao, Xingcheng; Cai, Mei; Yang, Li

2014-09-10

To better confine the sulfur/polysulfides in the electrode of lithium-sulfur (Li/S) batteries and improve the cycling stability, we developed a double-layered core-shell structure of polymer-coated carbon-sulfur. Carbon-sulfur was first prepared through the impregnation of sulfur into hollow carbon spheres under heat treatment, followed by a coating polymerization to give a double-layered core-shell structure. From the study of scanning transmission electron microscopy (STEM) images, we demonstrated that the sulfur not only successfully penetrated through the porous carbon shell but also aggregated along the inner wall of the carbon shell, which, for the first time, provided visible and convincing evidence that sulfur preferred diffusing into the hollow carbon rather than aggregating in/on the porous wall of the carbon. Taking advantage of this structure, a stable capacity of 900 mA h g(-1) at 0.2 C after 150 cycles and 630 mA h g(-1) at 0.6 C after 600 cycles could be obtained in Li/S batteries. We also demonstrated the feasibility of full cells using the sulfur electrodes to couple with the silicon film electrodes, which exhibited significantly improved cycling stability and efficiency. The remarkable electrochemical performance could be attributed to the desirable confinement of sulfur through the unique double-layered core-shell architectures.

Method of forming buried oxide layers in silicon

DOEpatents

Sadana, Devendra Kumar; Holland, Orin Wayne

2000-01-01

A process for forming Silicon-On-Insulator is described incorporating the steps of ion implantation of oxygen into a silicon substrate at elevated temperature, ion implanting oxygen at a temperature below 200.degree. C. at a lower dose to form an amorphous silicon layer, and annealing steps to form a mixture of defective single crystal silicon and polycrystalline silicon or polycrystalline silicon alone and then silicon oxide from the amorphous silicon layer to form a continuous silicon oxide layer below the surface of the silicon substrate to provide an isolated superficial layer of silicon. The invention overcomes the problem of buried isolated islands of silicon oxide forming a discontinuous buried oxide layer.

Coated Porous Si for High Performance On-Chip Supercapacitors

NASA Astrophysics Data System (ADS)

Grigoras, K.; Keskinen, J.; Grönberg, L.; Ahopelto, J.; Prunnila, M.

2014-11-01

High performance porous Si based supercapacitor electrodes are demonstrated. High power density and stability is provided by ultra-thin TiN coating of the porous Si matrix. The TiN layer is deposited by atomic layer deposition (ALD), which provides sufficient conformality to reach the bottom of the high aspect ratio pores. Our porous Si supercapacitor devices exhibit almost ideal double layer capacitor characteristic with electrode volumetric capacitance of 7.3 F/cm3. Several orders of magnitude increase in power and energy density is obtained comparing to uncoated porous silicon electrodes. Good stability of devices is confirmed performing several thousands of charge/discharge cycles.

Processes for producing low cost, high efficiency silicon solar cells

DOEpatents

Rohatgi, Ajeet; Chen, Zhizhang; Doshi, Parag

1996-01-01

Processes which utilize rapid thermal processing (RTP) are provided for inexpensively producing high efficiency silicon solar cells. The RTP processes preserve minority carrier bulk lifetime .tau. and permit selective adjustment of the depth of the diffused regions, including emitter and back surface field (bsf), within the silicon substrate. Silicon solar cell efficiencies of 16.9% have been achieved. In a first RTP process, an RTP step is utilized to simultaneously diffuse phosphorus and aluminum into the front and back surfaces, respectively, of a silicon substrate. Moreover, an in situ controlled cooling procedure preserves the carrier bulk lifetime .tau. and permits selective adjustment of the depth of the diffused regions. In a second RTP process, both simultaneous diffusion of the phosphorus and aluminum as well as annealing of the front and back contacts are accomplished during the RTP step. In a third RTP process, the RTP step accomplishes simultaneous diffusion of the phosphorus and aluminum, annealing of the contacts, and annealing of a double-layer antireflection/passivation coating SiN/SiO.sub.x.

Thin Film Transistors On Plastic Substrates

DOEpatents

Carey, Paul G.; Smith, Patrick M.; Sigmon, Thomas W.; Aceves, Randy C.

2004-01-20

A process for formation of thin film transistors (TFTs) on plastic substrates replaces standard thin film transistor fabrication techniques, and uses sufficiently lower processing temperatures so that inexpensive plastic substrates may be used in place of standard glass, quartz, and silicon wafer-based substrates. The silicon based thin film transistor produced by the process includes a low temperature substrate incapable of withstanding sustained processing temperatures greater than about 250.degree. C., an insulating layer on the substrate, a layer of silicon on the insulating layer having sections of doped silicon, undoped silicon, and poly-silicon, a gate dielectric layer on the layer of silicon, a layer of gate metal on the dielectric layer, a layer of oxide on sections of the layer of silicon and the layer of gate metal, and metal contacts on sections of the layer of silicon and layer of gate metal defining source, gate, and drain contacts, and interconnects.

Stability and rheology of dispersions of silicon nitride and silicon carbide

NASA Technical Reports Server (NTRS)

Feke, Donald L.

1987-01-01

The relationship between the surface and colloid chemistry of commercial ultra-fine silicon carbide and silicon nitride powders was examined by a variety of standard characterization techniques and by methodologies especially developed for ceramic dispersions. These include electrokinetic measurement, surface titration, and surface spectroscopies. The effects of powder pretreatment and modification strategies, which can be utilized to augment control of processing characteristics, were monitored with these technologies. Both silicon carbide and nitride were found to exhibit silica-like surface chemistries, but silicon nitride powders possess an additional amine surface functionality. Colloidal characteristics of the various nitride powders in aqueous suspension is believed to be highly dependent on the relative amounts of the two types of surface groups, which in turn is determined by the powder synthesis route. The differences in the apparent colloidal characteristics for silicon nitride powders cannot be attributed to the specific absorption of ammonium ions. Development of a model for the prediction of double-layer characteristics of materials with a hybrid site interface facilitated understanding and prediction of the behavior of both surface charge and surface potential for these materials. The utility of the model in application to silicon nitride powders was demonstrated.

Characterization of silicon-gate CMOS/SOS integrated circuits processed with ion implantation

NASA Technical Reports Server (NTRS)

Woo, D. S.

1980-01-01

The double layer metallization technology applied on p type silicon gate CMOS/SOS integrated circuits is described. A smooth metal surface was obtained by using the 2% Si-sputtered Al. More than 10% probe yield was achieved on solar cell controller circuit TCS136 (or MSFC-SC101). Reliability tests were performed on 15 arrays at 150 C. Only three arrays failed during the burn in, and 18 arrays out of 22 functioning arrays maintained the leakage current below 100 milli-A. Analysis indicates that this technology will be a viable process if the metal short circuit problem between the two metals can be reduced.

Apparatus and method of manufacture for an imager equipped with a cross-talk barrier

NASA Technical Reports Server (NTRS)

Pain, Bedabrata (Inventor)

2012-01-01

An imager apparatus and associated starting material are provided. In one embodiment, an imager is provided including a silicon layer of a first conductivity type acting as a junction anode. Such silicon layer is adapted to convert light to photoelectrons. Also included is a semiconductor well of a second conductivity type formed in the silicon layer for acting as a junction cathode. Still yet, a barrier is formed adjacent to the semiconductor well. In another embodiment, a starting material is provided including a first silicon layer and an oxide layer disposed adjacent to the first silicon layer. Also included is a second silicon layer disposed adjacent to the oxide layer opposite the first silicon layer. Such second silicon layer is further equipped with an associated passivation layer and/or barrier.

Effects of Fiber Coatings on Tensile Properties of Hi-Nicalon SiC/RBSN Tow Composites

NASA Technical Reports Server (NTRS)

Bhatt, Ramakrishna T.; Hull, David R.

1997-01-01

Uncoated Hi-Nicalon silicon carbide (SiC) fiber tows and those coated with a single surface layer of pyrolytic boron nitride (PBN), double layers of PBN/Si-rich PBN, and boron nitride (BN)/SiC coatings deposited by chemical vapor deposition (CVD) method were infiltrated with silicon slurry and then exposed to N2, for 4 hr at 1200 and 1400 C. Room temperature ultimate tensile fracture loads and microstructural characterization of uncoated and CVD coated Hi-Nicalon SiC fiber reinforced reaction-bonded silicon nitride (RBSN) tow composites were measured to select suitable interface coating(s) stable under RBSN processing conditions. Results indicate that room temperature ultimate fracture loads of the uncoated Hi-Nicalon SiC/RBSN tow composites nitrided at both temperatures were significantly lower than those of the uncoated Hi-Nicalon tows without slurry infiltration. In contrast, all CVD coated Hi-Nicalon SiC/RBSN tow composites retained a greater fraction of the dry tow fracture load after nitridation at 1200 C, but degraded significantly after nitridation at 1400 C. Reaction between metal impurities (Fe and Ni) present in the attrition milled silicon powder and uncoated regions of SiC fibers appears to be the probable cause for fiber degradation.

A Single Chip Automotive Control LSI Using SOI Bipolar Complimentary MOS Double-Diffused MOS

NASA Astrophysics Data System (ADS)

Kawamoto, Kazunori; Mizuno, Shoji; Abe, Hirofumi; Higuchi, Yasushi; Ishihara, Hideaki; Fukumoto, Harutsugu; Watanabe, Takamoto; Fujino, Seiji; Shirakawa, Isao

2001-04-01

Using the example of an air bag controller, a single chip solution for automotive sub-control systems is investigated, by using a technological combination of improved circuits, bipolar complimentary metal oxide silicon double-diffused metal oxide silicon (BiCDMOS) and thick silicon on insulator (SOI). For circuits, an automotive specific reduced instruction set computer (RISC) center processing unit (CPU), and a novel, all integrated system clock generator, dividing digital phase-locked loop (DDPLL) are proposed. For the device technologies, the authors use SOI-BiCDMOS with trench dielectric-isolation (TD) which enables integration of various devices in an integrated circuit (IC) while avoiding parasitic miss operations by ideal isolation. The structures of the SOI layer and TD, are optimized for obtaining desired device characteristics and high electromagnetic interference (EMI) immunity. While performing all the air bag system functions over a wide range of supply voltage, and ambient temperature, the resulting single chip reduces the electronic parts to about a half of those in the conventional air bags. The combination of single chip oriented circuits and thick SOI-BiCDMOS technologies offered in this work is valuable for size reduction and improved reliability of automotive electronic control units (ECUs).

A thin film approach for SiC-derived graphene as an on-chip electrode for supercapacitors

NASA Astrophysics Data System (ADS)

Ahmed, Mohsin; Khawaja, Mohamad; Notarianni, Marco; Wang, Bei; Goding, Dayle; Gupta, Bharati; Boeckl, John J.; Takshi, Arash; Motta, Nunzio; Saddow, Stephen E.; Iacopi, Francesca

2015-10-01

We designed a nickel-assisted process to obtain graphene with sheet resistance as low as 80 Ω square-1 from silicon carbide films on Si wafers with highly enhanced surface area. The silicon carbide film acts as both a template and source of graphitic carbon, while, simultaneously, the nickel induces porosity on the surface of the film by forming silicides during the annealing process which are subsequently removed. As stand-alone electrodes in supercapacitors, these transfer-free graphene-on-chip samples show a typical double-layer supercapacitive behaviour with gravimetric capacitance of up to 65 F g-1. This work is the first attempt to produce graphene with high surface area from silicon carbide thin films for energy storage at the wafer-level and may open numerous opportunities for on-chip integrated energy storage applications.

A thin film approach for SiC-derived graphene as an on-chip electrode for supercapacitors.

PubMed

Ahmed, Mohsin; Khawaja, Mohamad; Notarianni, Marco; Wang, Bei; Goding, Dayle; Gupta, Bharati; Boeckl, John J; Takshi, Arash; Motta, Nunzio; Saddow, Stephen E; Iacopi, Francesca

2015-10-30

We designed a nickel-assisted process to obtain graphene with sheet resistance as low as 80 Ω square(-1) from silicon carbide films on Si wafers with highly enhanced surface area. The silicon carbide film acts as both a template and source of graphitic carbon, while, simultaneously, the nickel induces porosity on the surface of the film by forming silicides during the annealing process which are subsequently removed. As stand-alone electrodes in supercapacitors, these transfer-free graphene-on-chip samples show a typical double-layer supercapacitive behaviour with gravimetric capacitance of up to 65 F g(-1). This work is the first attempt to produce graphene with high surface area from silicon carbide thin films for energy storage at the wafer-level and may open numerous opportunities for on-chip integrated energy storage applications.

Double-layered collagen graft to the radial forearm free flap donor sites without skin graft.

PubMed

Park, Tae-Jun; Kim, Hong-Joon; Ahn, Kang-Min

2015-12-01

Radial forearm free flap is the most reliable flap for intraoral soft tissue reconstruction after cancer ablation surgery. However, unesthetic scar of the donor site and the need for a second donor site for skin graft are major disadvantages of the forearm flap. The purpose of this study was to report the clinical results of double-layered collagen graft to the donor site of the forearm free flap without skin graft. Twenty-two consecutive patients who underwent oral cancer ablation and forearm reconstruction between April 2010 and November 2013 were included in this study. Male to female ratio was 12:10, and average age was 61.0 years old (27-84). Double-layered collagen was grafted to the donor site of the forearm free flap and healed for secondary intention. Upper silicone had been trimmed at the periphery during secondary intention, and dry dressing was used. Postoperative scar healing and esthetic results and function were evaluated. An average follow-up period was 34.9 months. The scar area was decreased to 63.9 % in average. The complete healing was obtained between 1.5 and 3 months according to the defect size. There was no functional defect or impairment 3 months after operation. All patients were satisfied with the esthetic results. Three patients died of recurred cancer. Double-layered collagen graft was successfully performed in this study. Without the thigh skin graft, patients had experienced less painful postoperative healing periods and discomfort.

Low-temperature sol-gel oxide TFT with a fluoropolymer dielectric to enhance the effective mobility at low operation voltage

NASA Astrophysics Data System (ADS)

Yu, Shang-Yu; Wang, Kuan-Hsun; Zan, Hsiao-Wen; Soppera, Olivier

2017-06-01

In this article, we propose a solution-processed high-performance amorphous indium-zinc oxide (a-IZO) thin-film transistor (TFT) gated with a fluoropolymer dielectric. Compared with a conventional IZO TFT with a silicon nitride dielectric, a fluoropolymer dielectric effectively reduces the operation voltage to less than 3 V and greatly increases the effective mobility 40-fold. We suggest that the dipole layer formed at the dielectric surface facilitates electron accumulation and induces the electric double-layer effect. The dipole-induced hysteresis effect is also investigated.

Method and apparatus for stable silicon dioxide layers on silicon grown in silicon nitride ambient

NASA Technical Reports Server (NTRS)

Cohen, R. A.; Wheeler, R. K. (Inventor)

1974-01-01

A method and apparatus for thermally growing stable silicon dioxide layers on silicon is disclosed. A previously etched and baked silicon nitride tube placed in a furnace is used to grow the silicon dioxide. First, pure oxygen is allowed to flow through the tube to initially coat the inside surface of the tube with a thin layer of silicon dioxide. After the tube is coated with the thin layer of silicon dioxide, the silicon is oxidized thermally in a normal fashion. If the tube becomes contaminated, the silicon dioxide is etched off thereby exposing clean silicon nitride and then the inside of the tube is recoated with silicon dioxide. As is disclosed, the silicon nitride tube can also be used as the ambient for the pyrolytic decomposition of silane and ammonia to form thin layers of clean silicon nitride.

GaN membrane MSM ultraviolet photodetectors

NASA Astrophysics Data System (ADS)

Muller, A.; Konstantinidis, G.; Kostopoulos, A.; Dragoman, M.; Neculoiu, D.; Androulidaki, M.; Kayambaki, M.; Vasilache, D.; Buiculescu, C.; Petrini, I.

2006-12-01

GaN exhibits unique physical properties, which make this material very attractive for wide range of applications and among them ultraviolet detection. For the first time a MSM type UV photodetector structure was manufactured on a 2.2 μm. thick GaN membrane obtained using micromachining techniques. The low unintentionally doped GaN layer structure was grown by MOCVD on high resistivity (ρ>10kΩcm) <111> oriented silicon wafers, 500μm thick. The epitaxially grown layers include a thin AlN layer in order to reduce the stress in the GaN layer and avoid cracking. Conventional contact lithography, e-gun Ni/Au (10nm /200nm) evaporation and lift-off techniques were used to define the interdigitated Schottky metalization on the top of the wafer. Ten digits with a width of 1μm and a length of 100μm were defined for each electrode. The distance between the digits was also 1μm. After the backside lapping of the wafer to a thickness of approximately 150μm, a 400nm thick Al layer was patterned and deposited on the backside, to be used as mask for the selective reactive ion etching of silicon. The backside mask, for the membrane formation, was patterned using double side alignment techniques and silicon was etched down to the 2.2μm thin GaN layer using SF 6 plasma. A very low dark current (30ρA at 3V) was obtained. Optical responsivity measurements were performed at 1.5V. A maximum responsivity of 18mA/W was obtained at a wavelength of 370nm. This value is very good and can be further improved using transparent contacts for the interdigitated structure.

Atomic-Layer-Deposited Transparent Electrodes for Silicon Heterojunction Solar Cells

DOE PAGES

Demaurex, Benedicte; Seif, Johannes P.; Smit, Sjoerd; ...

2014-11-01

We examine damage-free transparent-electrode deposition to fabricate high-efficiency amorphous silicon/crystalline silicon heterojunction solar cells. Such solar cells usually feature sputtered transparent electrodes, the deposition of which may damage the layers underneath. Using atomic layer deposition, we insert thin protective films between the amorphous silicon layers and sputtered contacts and investigate their effect on device operation. We find that a 20-nm-thick protective layer suffices to preserve, unchanged, the amorphous silicon layers beneath. Insertion of such protective atomic-layer-deposited layers yields slightly higher internal voltages at low carrier injection levels. However, we identify the presence of a silicon oxide layer, formed during processing,more » between the amorphous silicon and the atomic-layer-deposited transparent electrode that acts as a barrier, impeding hole and electron collection.« less

Epitaxial growth of silicon for layer transfer

DOEpatents

Teplin, Charles; Branz, Howard M

2015-03-24

Methods of preparing a thin crystalline silicon film for transfer and devices utilizing a transferred crystalline silicon film are disclosed. The methods include preparing a silicon growth substrate which has an interface defining substance associated with an exterior surface. The methods further include depositing an epitaxial layer of silicon on the silicon growth substrate at the surface and separating the epitaxial layer from the substrate substantially along the plane or other surface defined by the interface defining substance. The epitaxial layer may be utilized as a thin film of crystalline silicon in any type of semiconductor device which requires a crystalline silicon layer. In use, the epitaxial transfer layer may be associated with a secondary substrate.

Defect structure of epitaxial layers of III nitrides as determined by analyzing the shape of X-ray diffraction peaks

NASA Astrophysics Data System (ADS)

Kyutt, R. T.

2017-04-01

The shape of X-ray diffraction epitaxial layers with high dislocation densities has been studied experimentally. Measurements with an X-ray diffractometer were performed in double- and triple-crystal setups with both Cu K α and Mo K α radiation. Epitaxial layers (GaN, AlN, AlGaN, ZnO, etc.) with different degrees of structural perfection grown by various methods on sapphire, silicon, and silicon carbide substrates have been examined. The layer thickness varied in the range of 0.5-30 μm. It has been found that the center part of peaks is well approximated by the Voigt function with different Lorentz fractions, while the wing intensity drops faster and may be represented by a power function (with the index that varies from one structure to another). A well-marked dependence on the ordering of dislocations was observed. The drop in intensity in the majority of structures with a regular system and regular threading dislocations was close to the theoretically predicted law Δθ-3; the intensity in films with a chaotic distribution decreased much faster. The dependence of the peak shape on the order of reflection, the diffraction geometry, and the epitaxial layer thickness was also examined.

Titanium dioxide/silicon hole-blocking selective contact to enable double-heterojunction crystalline silicon-based solar cell

DOE Office of Scientific and Technical Information (OSTI.GOV)

Nagamatsu, Ken A., E-mail: knagamat@princeton.edu; Man, Gabriel; Jhaveri, Janam

2015-03-23

In this work, we use an electron-selective titanium dioxide (TiO{sub 2}) heterojunction contact to silicon to block minority carrier holes in the silicon from recombining at the cathode contact of a silicon-based photovoltaic device. We present four pieces of evidence demonstrating the beneficial effect of adding the TiO{sub 2} hole-blocking layer: reduced dark current, increased open circuit voltage (V{sub OC}), increased quantum efficiency at longer wavelengths, and increased stored minority carrier charge under forward bias. The importance of a low rate of recombination of minority carriers at the Si/TiO{sub 2} interface for effective blocking of minority carriers is quantitatively described.more » The anode is made of a poly(3,4-ethylenedioxythiophene):poly(styrenesulfonate) heterojunction to silicon which forms a hole selective contact, so that the entire device is made at a maximum temperature of 100 °C, with no doping gradients or junctions in the silicon. A low rate of recombination of minority carriers at the Si/TiO{sub 2} interface is crucial for effective blocking of minority carriers. Such a pair of complementary carrier-selective heterojunctions offers a path towards high-efficiency silicon solar cells using relatively simple and near-room temperature fabrication techniques.« less

Carbon buffer layers for smoothing superpolished glass surfaces as substrates for molybdenum /silicon multilayer soft-x-ray mirrors.

PubMed

Stock, H J; Hamelmann, F; Kleineberg, U; Menke, D; Schmiedeskamp, B; Osterried, K; Heidemann, K F; Heinzmann, U

1997-03-01

Zerodur and BK7 glass substrates (developed by Fa. Glaswerke Schott, D-55014 Mainz, Germany) from Carl Zeiss Oberkochen polished to a standard surface roughness of varsigma = 0.8 nm rms were coated with a C layer by electron-beam evaporation in the UHV. The roughness of the C-layer surfaces is reduced to 0.6 nm rms. A normal-incidence reflectance of 50% at a wavelength of 13 nm was measured for a Mo/Si multilayer soft-x-ray mirror with 30 double layers (N = 30) deposited onto the BK7/C substrate, whereas a similar Mo/Si multilayer (N = 30) evaporated directly onto the bare BK7 surface turned out to show a reflectance of only 42%.

Silicone metalization

DOEpatents

Maghribi, Mariam N [Livermore, CA; Krulevitch, Peter [Pleasanton, CA; Hamilton, Julie [Tracy, CA

2006-12-05

A system for providing metal features on silicone comprising providing a silicone layer on a matrix and providing a metal layer on the silicone layer. An electronic apparatus can be produced by the system. The electronic apparatus comprises a silicone body and metal features on the silicone body that provide an electronic device.

Silicone metalization

DOEpatents

Maghribi, Mariam N.; Krulevitch, Peter; Hamilton, Julie

2008-12-09

A system for providing metal features on silicone comprising providing a silicone layer on a matrix and providing a metal layer on the silicone layer. An electronic apparatus can be produced by the system. The electronic apparatus comprises a silicone body and metal features on the silicone body that provide an electronic device.

Uptake of Light Elements in Thin Metallic Films

NASA Astrophysics Data System (ADS)

Markwitz, Andreas; Waldschmidt, Mathias

Ion beam analysis was used to investigate the influence of substrate temperature on the inclusion of impurities during the deposition process of thin metallic single and double layers. Thin layers of gold and aluminium were deposited at different temperatures onto thin copper layers evaporated on silicon wafer substrates. The uptake of oxygen in the layers was measured using the highly sensitive non-resonant reaction 16O(d,p)170O at 920 keV. Nuclear reaction analysis was also used to probe for carbon and nitrogen with a limit of detection better than 20 ppm. Hydrogen depth profiles were measured using elastic recoil detection on the nanometer scale. Rutherford backscattering spectroscopy was used to determine the depth profiles of the metallic layers and to study diffusion processes. The combined ion beam analyses revealed an uptake of oxygen in the layers depending on the different metallic cap layers and the deposition temperature. Lowest oxygen values were measured for the Au/Cu layers, whereas the highest amount of oxygen was measured in Al/Cu layers deposited at 300°C. It was also found that with single copper layers produced at various temperatures, oxygen contamination occurred during the evaporation process and not afterwards, for example, as a consequence of the storage of the films under normal conditions for several days. Hydrogen, carbon, and nitrogen were found as impurities in the single and double layered metallic films, a finding that is in agreement with the measured oxidation behaviour of the metallic films.

Solar cell with silicon oxynitride dielectric layer

DOEpatents

Shepherd, Michael; Smith, David D

2015-04-28

Solar cells with silicon oxynitride dielectric layers and methods of forming silicon oxynitride dielectric layers for solar cell fabrication are described. For example, an emitter region of a solar cell includes a portion of a substrate having a back surface opposite a light receiving surface. A silicon oxynitride (SiO.sub.xN.sub.y, 0

Silica-forming articles having engineered surfaces to enhance resistance to creep sliding under high-temperature loading

DOE Office of Scientific and Technical Information (OSTI.GOV)

Lipkin, Don Mark; Johnson, Curtis Alan; Meschter, Peter Joel

An article includes a silicon-containing region; at least one outer layer overlying a surface of the silicon-containing region; and a constituent layer on the surface of the silicon-containing region and between and contacting the silicon-containing region and the at least one outer layer, the constituent layer being formed by constituents of the silicon-containing region and being susceptible to creep within an operating environment of the article, wherein the silicon-containing region defines a plurality of channels and a plurality of ridges that interlock within the plurality of channels are formed in the silicon-containing region to physically interlock the at least onemore » outer layer with the silicon-containing region through the constituent layer.« less

Process and design considerations for high-efficiency solar cells

NASA Technical Reports Server (NTRS)

Rohati, A.; Rai-Choudhury, P.

1985-01-01

This paper shows that oxide surface passivation coupled with optimum multilayer anti-reflective coating can provide approx. 3% (absolute) improvement in solar cell efficiency. Use of single-layer AR coating, without passivation, gives cell efficiencies in the range of 15 to 15.5% on high-quality, 4 ohm-cm as well as 0.1 to 0.2 ohm-cm float-zone silicon. Oxide surface passivation alone raises the cell efficiency to or = 17%. An optimum double-layer AR coating on oxide-passivated cells provides an additional approx. 5 to 10% improvement over a single-layer AR-coated cell, resulting in cell efficiencies in excess of 18%. Experimentally observed improvements are supported by model calculations and an approach to or = 20% efficient cells is discussed.

Atomic Layer Deposition of Chemical Passivation Layers and High Performance Anti-Reflection Coatings on Back-Illuminated Detectors

NASA Technical Reports Server (NTRS)

Hoenk, Michael E. (Inventor); Greer, Frank (Inventor); Nikzad, Shouleh (Inventor)

2014-01-01

A back-illuminated silicon photodetector has a layer of Al2O3 deposited on a silicon oxide surface that receives electromagnetic radiation to be detected. The Al2O3 layer has an antireflection coating deposited thereon. The Al2O3 layer provides a chemically resistant separation layer between the silicon oxide surface and the antireflection coating. The Al2O3 layer is thin enough that it is optically innocuous. Under deep ultraviolet radiation, the silicon oxide layer and the antireflection coating do not interact chemically. In one embodiment, the silicon photodetector has a delta-doped layer near (within a few nanometers of) the silicon oxide surface. The Al2O3 layer is expected to provide similar protection for doped layers fabricated using other methods, such as MBE, ion implantation and CVD deposition.

Mechanical properties of silicon in subsurface damage layer from nano-grinding studied by atomistic simulation

NASA Astrophysics Data System (ADS)

Zhang, Zhiwei; Chen, Pei; Qin, Fei; An, Tong; Yu, Huiping

2018-05-01

Ultra-thin silicon wafer is highly demanded by semi-conductor industry. During wafer thinning process, the grinding technology will inevitably induce damage to the surface and subsurface of silicon wafer. To understand the mechanism of subsurface damage (SSD) layer formation and mechanical properties of SSD layer, atomistic simulation is the effective tool to perform the study, since the SSD layer is in the scale of nanometer and hardly to be separated from underneath undamaged silicon. This paper is devoted to understand the formation of SSD layer, and the difference between mechanical properties of damaged silicon in SSD layer and ideal silicon. With the atomistic model, the nano-grinding process could be performed between a silicon workpiece and diamond tool under different grinding speed. To reach a thinnest SSD layer, nano-grinding speed will be optimized in the range of 50-400 m/s. Mechanical properties of six damaged silicon workpieces with different depths of cut will be studied. The SSD layer from each workpiece will be isolated, and a quasi-static tensile test is simulated to perform on the isolated SSD layer. The obtained stress-strain curve is an illustration of overall mechanical properties of SSD layer. By comparing the stress-strain curves of damaged silicon and ideal silicon, a degradation of Young's modulus, ultimate tensile strength (UTS), and strain at fracture is observed.

All-silicon tandem solar cells: Practical limits for energy conversion and possible routes for improvement

NASA Astrophysics Data System (ADS)

Jia, Xuguang; Puthen-Veettil, Binesh; Xia, Hongze; Yang, Terry Chien-Jen; Lin, Ziyun; Zhang, Tian; Wu, Lingfeng; Nomoto, Keita; Conibeer, Gavin; Perez-Wurfl, Ivan

2016-06-01

Silicon nanocrystals (Si NCs) embedded in a dielectric matrix is regarded as one of the most promising materials for the third generation photovoltaics, owing to their tunable bandgap that allows fabrication of optimized tandem devices. Previous work has demonstrated fabrication of Si NCs based tandem solar cells by sputter-annealing of thin multi-layers of silicon rich oxide and SiO2. However, these device efficiencies were much lower than expected given that their theoretical values are much higher. Thus, it is necessary to understand the practical conversion efficiency limits for these devices. In this article, practical efficiency limits of Si NC based double junction tandem cells determined by fundamental material properties such as minority carrier, mobility, and lifetime are investigated. The practical conversion efficiency limits for these devices are significantly different from the reported efficiency limits which use Shockley-Queisser assumptions. Results show that the practical efficiency limit of a double junction cell (1.6 eV Si NC top cell and a 25% efficient c-Si PERL cell as the bottom cell) is 32%. Based on these results suggestions for improvement to the performance of Si nanocrystal based tandem solar cells in terms of the different parameters that were simulated are presented.

Back contact to film silicon on metal for photovoltaic cells

DOEpatents

Branz, Howard M.; Teplin, Charles; Stradins, Pauls

2013-06-18

A crystal oriented metal back contact for solar cells is disclosed herein. In one embodiment, a photovoltaic device and methods for making the photovoltaic device are disclosed. The photovoltaic device includes a metal substrate with a crystalline orientation and a heteroepitaxial crystal silicon layer having the same crystal orientation of the metal substrate. A heteroepitaxial buffer layer having the crystal orientation of the metal substrate is positioned between the substrate and the crystal silicon layer to reduce diffusion of metal from the metal foil into the crystal silicon layer and provide chemical compatibility with the heteroepitaxial crystal silicon layer. Additionally, the buffer layer includes one or more electrically conductive pathways to electrically couple the crystal silicon layer and the metal substrate.

Oriented conductive oxide electrodes on SiO2/Si and glass

DOEpatents

Jia, Quanxi; Arendt, Paul N.

2001-01-01

A thin film structure is provided including a silicon substrate with a layer of silicon dioxide on a surface thereof, and a layer of cubic oxide material deposited upon the layer of silicon dioxide by ion-beam-assisted-deposition, said layer of cubic oxide material characterized as biaxially oriented. Preferably, the cubic oxide material is yttria-stabilized zirconia. Additional thin layers of biaxially oriented ruthenium oxide or lanthanum strontium cobalt oxide are deposited upon the layer of yttria-stabilized zirconia. An intermediate layer of cerium oxide is employed between the yttria-stabilized zirconia layer and the lanthanum strontium cobalt oxide layer. Also, a layer of barium strontium titanium oxide can be upon the layer of biaxially oriented ruthenium oxide or lanthanum strontium cobalt oxide. Also, a method of forming such thin film structures, including a low temperature deposition of a layer of a biaxially oriented cubic oxide material upon the silicon dioxide surface of a silicon dioxide/silicon substrate is provided.

Sol-gel derived antireflective structures for applications in silicon solar cells

NASA Astrophysics Data System (ADS)

Karasiński, Paweł; Skolik, Marcin

2016-12-01

This work presents theoretical and experimental results of antireflective coatings (ARCs) obtained for applications in silicon solar cells. ARCs were derived from sol-gel process and dip-coated using silica (SiO2) and titania (TiO2). Theoretical results were obtained using 2×2 transfer matrix calculation method. Technological process of SiO2 and TiO2 thin film fabrication as well as measurement techniques are described in this paper. Strong correlation between theoretical and experimental data is demonstrated. It is shown, that weighted average reflection from a substrate can be reduced ten times with the use of SiO2/TiO2/Si double layer ARCs, when compared to a bare silica substrate.

Trends and Techniques for Space Base Electronics

NASA Technical Reports Server (NTRS)

Trotter, J. D.; Wade, T. E.; Gassaway, J. D.

1979-01-01

Simulations of various phosphorus and boron diffusions in SOS were completed and a sputtering system, furnaces, and photolithography related equipment were set up. Double layer metal experiments initially utilized wet chemistry techniques. By incorporating ultrasonic etching of the vias, premetal cleaning a modified buffered HF, phosphorus doped vapox, and extended sintering, yields of 98% were obtained using the standard test pattern. A two dimensional modeling program was written for simulating short channel MOSFETs with nonuniform substrate doping. A key simplifying assumption used is that the majority carriers can be represented by a sheet charge at the silicon dioxide silicon interface. Although the program is incomplete, the two dimensional Poisson equation for the potential distribution was achieved. The status of other Z-D MOSFET simulation programs is summarized.

A fluid collection system for dermal wounds in clinical investigations

PubMed Central

Klopfer, Michael; Li, G.-P.; Widgerow, Alan; Bachman, Mark

2016-01-01

In this work, we demonstrate the use of a thin, self adherent, and clinically durable patch device that can collect fluid from a wound site for analysis. This device is manufactured from laminated silicone layers using a novel all-silicone double-molding process. In vitro studies for flow and delivery were followed by a clinical demonstration for exudate collection efficiency from a clinically presented partial thickness burn. The demonstrated utility of this device lends itself for use as a research implement used to clinically sample wound exudate for analysis. This device can serve as a platform for future integration of wearable technology into wound monitoring and care. The demonstrated fabrication method can be used for devices requiring thin membrane construction. PMID:27051470

Hole transport in c-plane InGaN-based green laser diodes

DOE Office of Scientific and Technical Information (OSTI.GOV)

Cheng, Yang; Liu, Jianping, E-mail: jpliu2010@sinano.ac.cn; Tian, Aiqin

2016-08-29

Hole transport in c-plane InGaN-based green laser diodes (LDs) has been investigated by both simulations and experiments. It is found that holes can overflow from the green double quantum wells (DQWs) at high current density, which reduces carrier injection efficiency of c-plane InGaN-based green LDs. A heavily silicon-doped layer right below the green DQWs can effectively suppress hole overflow from the green DQWs.

Improved PECVD Si x N y film as a mask layer for deep wet etching of the silicon

NASA Astrophysics Data System (ADS)

Han, Jianqiang; Yin, Yi Jun; Han, Dong; Dong, LiZhen

2017-09-01

Although plasma enhanced chemical vapor deposition (PECVD) silicon nitride (Si x N y ) films have been extensively investigated by many researchers, requirements of film properties vary from device to device. For some applications utilizing Si x N y film as the mask Layer for deep wet etching of the silicon, it is very desirable to obtain a high quality film. In this study, Si x N y films were deposited on silicon substrates by PECVD technique from the mixtures of NH3 and 5% SiH4 diluted in Ar. The deposition temperature and RF power were fixed at 400 °C and 20 W, respectively. By adjusting the SiH4/NH3 flow ratio, Si x N y films of different compositions were deposited on silicon wafers. The stoichiometry, residual stress, etch rate in 1:50 HF, BHF solution and 40% KOH solution of deposited Si x N y films were measured. The experimental results show that the optimum SiH4/NH3 flow ratio at which deposited Si x N y films can perfectly protect the polysilicon resistors on the front side of wafers during KOH etching is between 1.63 and 2.24 under the given temperature and RF power. Polysilicon resistors protected by the Si x N y films can withstand 6 h 40% KOH double-side etching at 80 °C. At the range of SiH4/NH3 flow ratios, the Si/N atom ratio of films ranges from 0.645 to 0.702, which slightly deviate the ideal stoichiometric ratio of LPCVD Si3N4 film. In addition, the silicon nitride films with the best protection effect are not the films of minimum etch rate in KOH solution.

Thin Carbon Layers on Nanostructured Silicon-Properties and Applications

NASA Astrophysics Data System (ADS)

Angelescu, Anca; Kleps, Irina; Miu, Mihaela; Simion, Monica; Bragaru, Adina; Petrescu, Stefana; Paduraru, Crina; Raducanu, Aurelia

Thin carbon layers such as silicon carbide (SiC) and diamond like carbon (DLC) layers on silicon, or on nanostructured silicon substrats were obtained by different methods. This paper is a review of our results in the areas of carbon layer microfabrication technologies and their properties related to different microsystem apllications. So, silicon membranes using a-SiC or DLC layers as etching mask, as well as silicon carbide membranes using a combined porous silicon — DLC structure were fabricated for sensor applications. A detailed evaluation of the field emission (FE) properties of these films was done to demonstrate their capability to be used in field emission devices. Carbon thin layers on nanostructured silicon samples were also investigated with respect to the living cell adhesion on these structures. The experiments indicate that the cell attachment on the surface of carbon coatings can be controlled by deposition parameters during the technological process.

Stability, resolution, and ultra-low wear amplitude modulation atomic force microscopy of DNA: Small amplitude small set-point imaging

NASA Astrophysics Data System (ADS)

Santos, Sergio; Barcons, Victor; Christenson, Hugo K.; Billingsley, Daniel J.; Bonass, William A.; Font, Josep; Thomson, Neil H.

2013-08-01

A way to operate fundamental mode amplitude modulation atomic force microscopy is introduced which optimizes stability and resolution for a given tip size and shows negligible tip wear over extended time periods (˜24 h). In small amplitude small set-point (SASS) imaging, the cantilever oscillates with sub-nanometer amplitudes in the proximity of the sample, without the requirement of using large drive forces, as the dynamics smoothly lead the tip to the surface through the water layer. SASS is demonstrated on single molecules of double-stranded DNA in ambient conditions where sharp silicon tips (R ˜ 2-5 nm) can resolve the right-handed double helix.

Memory device using movement of protons

DOEpatents

Warren, W.L.; Vanheusden, K.J.R.; Fleetwood, D.M.; Devine, R.A.B.

1998-11-03

An electrically written memory element is disclosed utilizing the motion of protons within a dielectric layer surrounded by layers on either side to confine the protons within the dielectric layer with electrode means attached to the surrounding layers to change the spatial position of the protons within the dielectric layer. The device is preferably constructed as a silicon-silicon dioxide-silicon layered structure with the protons being introduced to the structure laterally through the exposed edges of the silicon dioxide layer during a high temperature anneal in an atmosphere containing hydrogen gas. The device operates at low power, is preferably nonvolatile, is radiation tolerant, and is compatible with convention silicon MOS processing for integration with other microelectronic elements on the same silicon substrate. With the addition of an optically active layer, the memory element becomes an electrically written, optically read optical memory element. 19 figs.

Memory device using movement of protons

DOEpatents

Warren, William L.; Vanheusden, Karel J. R.; Fleetwood, Daniel M.; Devine, Roderick A. B.

1998-01-01

An electrically written memory element utilizing the motion of protons within a dielectric layer surrounded by layers on either side to confine the protons within the dielectric layer with electrode means attached to the surrounding layers to change the spatial position of the protons within the dielectric layer. The device is preferably constructed as a silicon-silicon dioxide-silicon layered structure with the protons being introduced to the structure laterally through the exposed edges of the silicon dioxide layer during a high temperature anneal in an atmosphere containing hydrogen gas. The device operates at low power, is preferably nonvolatile, is radiation tolerant, and is compatible with convention silicon MOS processing for integration with other microelectronic elements on the same silicon substrate. With the addition of an optically active layer, the memory element becomes an electrically written, optically read optical memory element.

Memory device using movement of protons

DOEpatents

Warren, William L.; Vanheusden, Karel J. R.; Fleetwood, Daniel M.; Devine, Roderick A. B.

2000-01-01

An electrically written memory element utilizing the motion of protons within a dielectric layer surrounded by layers on either side to confine the protons within the dielectric layer with electrode means attached to the surrounding layers to change the spatial position of the protons within the dielectric layer. The device is preferably constructed as a silicon-silicon dioxide-silicon layered structure with the protons being introduced to the structure laterally through the exposed edges of the silicon dioxide layer during a high temperature anneal in an atmosphere containing hydrogen gas. The device operates at low power, is preferably nonvolatile, is radiation tolerant, and is compatible with convention silicon MOS processing for integration with other microelectronic elements on the same silicon substrate. With the addition of an optically active layer, the memory element becomes an electrically written, optically read optical memory element.

Electronic unit integrated into a flexible polymer body

DOEpatents

Krulevitch, Peter A [Pleasanton, CA; Maghribi, Mariam N [Livermore, CA; Benett, William J [Livermore, CA; Hamilton, Julie K [Tracy, CA; Rose, Klint A [Mt. View, CA; Davidson, James Courtney [Livermore, CA; Strauch, Mark S [Livermore, CA

2008-03-11

A peel and stick electronic system comprises a silicone body, and at least one electronic unit operatively connected to the silicone body. The electronic system is produce by providing a silicone layer on a substrate, providing a metal layer on the silicone layer, and providing at least one electronic unit connected to the metal layer.

Electronic unit integrated into a flexible polymer body

DOEpatents

Krulevitch, Peter A [Pleasanton, CA; Maghribi, Mariam N [Livermore, CA; Benett, William J [Livermore, CA; Hamilton, Julie K [Tracy, CA; Rose, Klint A [Mt. View, CA; Davidson, James Courtney [Livermore, CA; Strauch, Mark S [Livermore, CA

2006-04-18

A peel and stick electronic system comprises a silicone body, and at least one electronic unit operatively connected to the silicone body. The electronic system is produce by providing a silicone layer on a substrate, providing a metal layer on the silicone layer, and providing at least one electronic unit connected to the metal layer.

Electronic unit integrated into a flexible polymer body

DOEpatents

Krulevitch, Peter A.; Maghribi, Mariam N.; Benett, William J.; Hamilton, Julie K.; Rose, Klint A.; Davidson, James Courtney; Strauch, Mark S.

2005-04-12

A peel and stick electronic system comprises a silicone body, and at least one electronic unit operatively connected to the silicone body. The electronic system is produce by providing a silicone layer on a substrate, providing a metal layer on the silicone layer, and providing at least one electronic unit connected to the metal layer.

Electronic Unit Integrated Into A Flexible Polymer Body

DOEpatents

Krulevitch, Peter A.; Maghribi, Mariam N.; Benett, William J.; Hamilton, Julie K.; Rose, Klint A.; Davidson, James Courtney; Strauch, Mark S.

2006-01-31

A peel and stick electronic system comprises a silicone body, and at least one electronic unit operatively connected to the silicone body. The electronic system is produce by providing a silicone layer on a substrate, providing a metal layer on the silicone layer, and providing at least one electronic unit connected to the metal layer.

Polarization of gold in nanopores leads to ion current rectification

DOE PAGES

Yang, Crystal; Hinkle, Preston; Menestrina, Justin; ...

2016-10-03

Biomimetic nanopores with rectifying properties are relevant components of ionic switches, ionic circuits, and biological sensors. Rectification indicates that currents for voltages of one polarity are higher than currents for voltages of the opposite polarity. Ion current rectification requires the presence of surface charges on the pore walls, achieved either by the attachment of charged groups or in multielectrode systems by applying voltage to integrated gate electrodes. Here we present a simpler concept for introducing surface charges via polarization of a thin layer of Au present at one entrance of a silicon nitride nanopore. In an electric field applied bymore » two electrodes placed in bulk solution on both sides of the membrane, the Au layer polarizes such that excess positive charge locally concentrates at one end and negative charge concentrates at the other end. Consequently, a junction is formed between zones with enhanced anion and cation concentrations in the solution adjacent to the Au layer. This bipolar double layer together with enhanced cation concentration in a negatively charged silicon nitride nanopore leads to voltage-controlled surface-charge patterns and ion current rectification. The experimental findings are supported by numerical modeling that confirm modulation of ionic concentrations by the Au layer and ion current rectification even in low-aspect ratio nanopores. Lastly, our findings enable a new strategy for creating ionic circuits with diodes and transistors.« less

Methods To Determine the Silicone Oil Layer Thickness in Sprayed-On Siliconized Syringes.

PubMed

Loosli, Viviane; Germershaus, Oliver; Steinberg, Henrik; Dreher, Sascha; Grauschopf, Ulla; Funke, Stefanie

2018-01-01

The silicone lubricant layer in prefilled syringes has been investigated with regards to siliconization process performance, prefilled syringe functionality, and drug product attributes, such as subvisible particle levels, in several studies in the past. However, adequate methods to characterize the silicone oil layer thickness and distribution are limited, and systematic evaluation is missing. In this study, white light interferometry was evaluated to close this gap in method understanding. White light interferometry demonstrated a good accuracy of 93-99% for MgF 2 coated, curved standards covering a thickness range of 115-473 nm. Thickness measurements for sprayed-on siliconized prefilled syringes with different representative silicone oil distribution patterns (homogeneous, pronounced siliconization at flange or needle side, respectively) showed high instrument (0.5%) and analyst precision (4.1%). Different white light interferometry instrument parameters (autofocus, protective shield, syringe barrel dimensions input, type of non-siliconized syringe used as base reference) had no significant impact on the measured average layer thickness. The obtained values from white light interferometry applying a fully developed method (12 radial lines, 50 mm measurement distance, 50 measurements points) were in agreement with orthogonal results from combined white and laser interferometry and 3D-laser scanning microscopy. The investigated syringe batches (lot A and B) exhibited comparable longitudinal silicone oil layer thicknesses ranging from 170-190 nm to 90-100 nm from flange to tip and homogeneously distributed silicone layers over the syringe barrel circumference (110- 135 nm). Empty break-loose (4-4.5 N) and gliding forces (2-2.5 N) were comparably low for both analyzed syringe lots. A silicone oil layer thickness of 100-200 nm was thus sufficient for adequate functionality in this particular study. Filling the syringe with a surrogate solution including short-term exposure and emptying did not significantly influence the silicone oil layer at the investigated silicone level. It thus appears reasonable to use this approach to characterize silicone oil layers in filled syringes over time. The developed method characterizes non-destructively the layer thickness and distribution of silicone oil in empty syringes and provides fast access to reliable results. The gained information can be further used to support optimization of siliconization processes and increase the understanding of syringe functionality. LAY ABSTRACT: Silicone oil layers as lubricant are required to ensure functionality of prefilled syringes. Methods evaluating these layers are limited, and systematic evaluation is missing. The aim of this study was to develop and assess white light interferometry as an analytical method to characterize sprayed-on silicone oil layers in 1 mL prefilled syringes. White light interferometry showed a good accuracy (93-99%) as well as instrument and analyst precision (0.5% and 4.1%, respectively). Different applied instrument parameters had no significant impact on the measured layer thickness. The obtained values from white light interferometry applying a fully developed method concurred with orthogonal results from 3D-laser scanning microscopy and combined white light and laser interferometry. The average layer thicknesses in two investigated syringe lots gradually decreased from 170-190 nm at the flange to 100-90 nm at the needle side. The silicone layers were homogeneously distributed over the syringe barrel circumference (110-135 nm) for both lots. Empty break-loose (4-4.5 N) and gliding forces (2-2.5 N) were comparably low for both analyzed syringe lots. Syringe filling with a surrogate solution, including short-term exposure and emptying, did not significantly affect the silicone oil layer. The developed, non-destructive method provided reliable results to characterize the silicone oil layer thickness and distribution in empty siliconized syringes. This information can be further used to support optimization of siliconization processes and increase understanding of syringe functionality. © PDA, Inc. 2018.

Method for sputtering a PIN microcrystalline/amorphous silicon semiconductor device with the P and N-layers sputtered from boron and phosphorous heavily doped targets

DOEpatents

Moustakas, Theodore D.; Maruska, H. Paul

1985-04-02

A silicon PIN microcrystalline/amorphous silicon semiconductor device is constructed by the sputtering of N, and P layers of silicon from silicon doped targets and the I layer from an undoped target, and at least one semi-transparent ohmic electrode.

Mechanical studies towards a silicon micro-strip super module for the ATLAS inner detector upgrade at the high luminosity LHC

NASA Astrophysics Data System (ADS)

Barbier, G.; Cadoux, F.; Clark, A.; Endo, M.; Favre, Y.; Ferrere, D.; Gonzalez-Sevilla, S.; Hanagaki, K.; Hara, K.; Iacobucci, G.; Ikegami, Y.; Jinnouchi, O.; La Marra, D.; Nakamura, K.; Nishimura, R.; Perrin, E.; Seez, W.; Takubo, Y.; Takashima, R.; Terada, S.; Todome, K.; Unno, Y.; Weber, M.

2014-04-01

It is expected that after several years of data-taking, the Large Hadron Collider (LHC) physics programme will be extended to the so-called High-Luminosity LHC, where the instantaneous luminosity will be increased up to 5 × 1034 cm-2 s-1. For the general-purpose ATLAS experiment at the LHC, a complete replacement of its internal tracking detector will be necessary, as the existing detector will not provide the required performance due to the cumulated radiation damage and the increase in the detector occupancy. The baseline layout for the new ATLAS tracker is an all-silicon-based detector, with pixel sensors in the inner layers and silicon micro-strip detectors at intermediate and outer radii. The super-module (SM) is an integration concept proposed for the barrel strip region of the future ATLAS tracker, where double-sided stereo silicon micro-strip modules (DSM) are assembled into a low-mass local support (LS) structure. Mechanical aspects of the proposed LS structure are described.

Effect of ultraviolet illumination and ambient gases on the photoluminescence and electrical properties of nanoporous silicon layer for organic vapor sensor.

PubMed

Atiwongsangthong, Narin

2012-08-01

The purpose of this research, the nanoporous silicon layer were fabricated and investigated the physical properties such as photoluminescence and the electrical properties in order to develop organic vapor sensor by using nanoporous silicon. The Changes in the photoluminescence intensity of nanoporous silicon samples are studied during ultraviolet illumination in various ambient gases such as nitrogen, oxigen and vacuum. In this paper, the nanoporous silicon layer was used as organic vapor adsorption and sensing element. The advantage of this device are simple process compatible in silicon technology and usable in room temperature. The structure of this device consists of nanoporous silicon layer which is formed by anodization of silicon wafer in hydrofluoric acid solution and aluminum electrode which deposited on the top of nanoporous silicon layer by evaporator. The nanoporous silicon sensors were placed in a gas chamber with various organic vapor such as ethanol, methanol and isopropyl alcohol. From studying on electrical characteristics of this device, it is found that the nanoporous silicon layer can detect the different organic vapor. Therefore, the nanoporous silicon is important material for organic vapor sensor and it can develop to other applications about gas sensors in the future.

Surface texture of single-crystal silicon oxidized under a thin V{sub 2}O{sub 5} layer

DOE Office of Scientific and Technical Information (OSTI.GOV)

Nikitin, S. E., E-mail: nikitin@mail.ioffe.ru; Verbitskiy, V. N.; Nashchekin, A. V.

The process of surface texturing of single-crystal silicon oxidized under a V{sub 2}O{sub 5} layer is studied. Intense silicon oxidation at the Si–V{sub 2}O{sub 5} interface begins at a temperature of 903 K which is 200 K below than upon silicon thermal oxidation in an oxygen atmosphere. A silicon dioxide layer 30–50 nm thick with SiO{sub 2} inclusions in silicon depth up to 400 nm is formed at the V{sub 2}O{sub 5}–Si interface. The diffusion coefficient of atomic oxygen through the silicon-dioxide layer at 903 K is determined (D ≥ 2 × 10{sup –15} cm{sup 2} s{sup –1}). A modelmore » of low-temperature silicon oxidation, based on atomic oxygen diffusion from V{sub 2}O{sub 5} through the SiO{sub 2} layer to silicon, and SiO{sub x} precipitate formation in silicon is proposed. After removing the V{sub 2}O{sub 5} and silicon-dioxide layers, texture is formed on the silicon surface, which intensely scatters light in the wavelength range of 300–550 nm and is important in the texturing of the front and rear surfaces of solar cells.« less

Method of producing buried porous silicon-geramanium layers in monocrystalline silicon lattices

NASA Technical Reports Server (NTRS)

Fathauer, Robert W. (Inventor); George, Thomas (Inventor); Jones, Eric W. (Inventor)

1997-01-01

Lattices of alternating layers of monocrystalline silicon and porous silicon-germanium have been produced. These single crystal lattices have been fabricated by epitaxial growth of Si and Si--Ge layers followed by patterning into mesa structures. The mesa structures are stain etched resulting in porosification of the Si--Ge layers with a minor amount of porosification of the monocrystalline Si layers. Thicker Si--Ge layers produced in a similar manner emitted visible light at room temperature.

High-Temperature Annealing as a Method for the Silicon Nanoclusters Growth in Stoichiometric Silicon Dioxide

NASA Astrophysics Data System (ADS)

Ivanova, E. V.; Dementev, P. A.; Sitnikova, A. A.; Aleksandrov, O. V.; Zamoryanskaya, M. V.

2018-07-01

A method for the growth of nanocomposite layers in stoichiometric amorphous silicon dioxide is proposed. It is shown that, after annealing at a temperature of 1150°C in nitrogen atmosphere, a layer containing silicon nanoclusters is formed. Silicon nanoclusters have a crystal structure and a size of 3-6 nm. In a film grown on a n-type substrate, a layer of silicon nanoclusters with a thickness of about 10 nm is observed. In the case of a film grown on a p-type substrate, a nanocomposite layer with a thickness of about 100 nm is observed. The difference in the formation of a nanocomposite layer in films on various substrates is associated with the doping of silicon dioxide with impurities from the substrate during the growth of the film. The formation of the nanocomposite layer was confirmed by transmission electron microscopy, XPS and local cathodoluminescence studies.

Increased voltage photovoltaic cell

NASA Technical Reports Server (NTRS)

Ross, B.; Bickler, D. B.; Gallagher, B. D. (Inventor)

1985-01-01

A photovoltaic cell, such as a solar cell, is provided which has a higher output voltage than prior cells. The improved cell includes a substrate of doped silicon, a first layer of silicon disposed on the substrate and having opposite doping, and a second layer of silicon carbide disposed on the first layer. The silicon carbide preferably has the same type of doping as the first layer.

Wide-band 'black silicon' with atomic layer deposited NbN.

PubMed

Isakov, Kirill; Perros, Alexander Pyymaki; Shah, Ali; Lipsanen, Harri

2018-08-17

Antireflection surfaces are often utilized in optical components to reduce undesired reflection and increase absorption. We report on black silicon (b-Si) with dramatically enhanced absorption over a broad wavelength range (250-2500 nm) achieved by applying a 10-15 nm conformal coating of NbN with atomic layer deposition (ALD). The improvement is especially pronounced in the near infrared (NIR) range of 1100-2500 nm where absorption is increased by >90%. A significant increase of absorption is also observed over the ultraviolet range of 200-400 nm. Preceding NbN deposition with a nanostructured ALD Al 2 O 3 (n-Al 2 O 3 ) coating to enhance the NbN texture was also examined. Such texturing further improves absorption in the NIR, especially at longer wavelengths, strong absorption up to 4-5 μm wavelengths has been attested. For comparison, double side polished silicon and sapphire coated with 10 nm thick NbN exhibited absorption of only ∼55% in the NIR range of 1100-2500 nm. The results suggest a positive correlation between the surface area of NbN coating and optical absorption. Based on the wide-band absorption, the presented NbN-coated b-Si may be an attractive candidate for use in e.g. spectroscopic systems, infrared microbolometers.

Use of double pigtail stent in hypospadias surgery.

PubMed

Chang, Paul C Y; Yeh, Ming-Lun; Chao, Chun-Chih; Chang, Chi-Jen

2011-01-01

Various types and materials of stents have been used for urinary diversion in hypospadias surgery. We evaluated whether double pigtail stents are superior to straight silicone stents. We conducted a retrospective chart review of all patients who underwent hypospadias surgery with straight silicone or double pigtail stents between November 1997 and October 2005. Comparisons were made between the two groups specifically with regard to the complication rates. A total of 86 patients were included. The complication rates in patients who received double pigtail stents were significantly reduced as compared with those who received straight silicon stents. There was less wound disruption associated with early stent dislodgement in the double pigtail group compared with the straight silicone group (3.2%vs. 17.4%, p< 0.05). The rate of urethrocutaneous fistula was also lower in the double pigtail stent group (12.7%vs. 30.4%). Subjectively, there was also improved patient comfort and parent anxiety in the double pigtail stent group. Double pigtail stent is a suitable material for urinary diversion in hypospadias surgery. It not only reduces patient discomfort, but also decreases complication rates in hypospadias surgery. Copyright © 2011 Asian Surgical Association. Published by Elsevier B.V. All rights reserved.

Photo-EMF sensitivity of porous silicon thin layer-crystalline silicon heterojunction to ammonia adsorption.

PubMed

Vashpanov, Yuriy; Jung, Jae Il; Kwack, Kae Dal

2011-01-01

A new method of using photo-electromotive force in detecting gas and controlling sensitivity is proposed. Photo-electromotive force on the heterojunction between porous silicon thin layer and crystalline silicon wafer depends on the concentration of ammonia in the measurement chamber. A porous silicon thin layer was formed by electrochemical etching on p-type silicon wafer. A gas and light transparent electrical contact was manufactured to this porous layer. Photo-EMF sensitivity corresponding to ammonia concentration in the range from 10 ppm to 1,000 ppm can be maximized by controlling the intensity of illumination light.

Apparatus and method of manufacture for depositing a composite anti-reflection layer on a silicon surface

NASA Technical Reports Server (NTRS)

Pain, Bedabrata (Inventor)

2012-01-01

An apparatus and associated method are provided. A first silicon layer having at least one of an associated passivation layer and barrier is included. Also included is a composite anti-reflection layer including a stack of layers each with a different thickness and refractive index. Such composite anti-reflection layer is disposed adjacent to the first silicon layer.

Method for implementation of back-illuminated CMOS or CCD imagers

NASA Technical Reports Server (NTRS)

Pain, Bedabrata (Inventor)

2008-01-01

A method for implementation of back-illuminated CMOS or CCD imagers. An oxide layer buried between silicon wafer and device silicon is provided. The oxide layer forms a passivation layer in the imaging structure. A device layer and interlayer dielectric are formed, and the silicon wafer is removed to expose the oxide layer.

Photobleachable Diazonium Salt-Phenolic Resin Two-Layer Resist System

NASA Astrophysics Data System (ADS)

Uchino, Shou-ichi; Iwayanagi, Takao; Hashimoto, Michiaki

1988-01-01

This article describes a new negative two-layer photoresist system formed by a simple, successive spin-coating method. An aqueous acetic acid solution of diazonium salt and poly(N-vinylpyrrolidone) is deposited so as to contact a phenolic resin film spin-coated on a silicon wafer. The diazonium salt diffuses into the phenolic resin layer after standing for several minutes. The residual solution on the phenolic resin film doped with diazonium salt is spun to form the diazonium salt-poly(N-vinylpyrrolidone) top layer. This forms a uniform two-layer resist without phase separation or striation. Upon UV exposure, the diazonium salt in the top layer bleaches to act as a CEL dye, while the diazonium salt in the bottom layer decomposes to cause insolubilization. Half μm line-and-space patterns are obtained with an i-line stepper using 4-diazo-N,N-dimethylaniline chloride zinc chloride double salt as the diazonium salt and a cresol novolac resin for the bottom polymer layer. The resist formation processes, insolubilization mechanism, and the resolution capability of the new two-layer resist are discussed.

Analysis of thin baked-on silicone layers by FTIR and 3D-Laser Scanning Microscopy.

PubMed

Funke, Stefanie; Matilainen, Julia; Nalenz, Heiko; Bechtold-Peters, Karoline; Mahler, Hanns-Christian; Friess, Wolfgang

2015-10-01

Pre-filled syringes (PFS) and auto-injection devices with cartridges are increasingly used for parenteral administration. To assure functionality, silicone oil is applied to the inner surface of the glass barrel. Silicone oil migration into the product can be minimized by applying a thin but sufficient layer of silicone oil emulsion followed by thermal bake-on versus spraying-on silicone oil. Silicone layers thicker than 100nm resulting from regular spray-on siliconization can be characterized using interferometric profilometers. However, the analysis of thin silicone layers generated by bake-on siliconization is more challenging. In this paper, we have evaluated Fourier transform infrared (FTIR) spectroscopy after solvent extraction and a new 3D-Laser Scanning Microscopy (3D-LSM) to overcome this challenge. A multi-step solvent extraction and subsequent FTIR spectroscopy enabled to quantify baked-on silicone levels as low as 21-325μg per 5mL cartridge. 3D-LSM was successfully established to visualize and measure baked-on silicone layers as thin as 10nm. 3D-LSM was additionally used to analyze the silicone oil distribution within cartridges at such low levels. Both methods provided new, highly valuable insights to characterize the siliconization after processing, in order to achieve functionality. Copyright © 2015 Elsevier B.V. All rights reserved.

On-chip broadband spectral filtering using planar double high-contrast grating reflectors

NASA Astrophysics Data System (ADS)

Horie, Yu; Arbabi, Amir; Faraon, Andrei

2015-02-01

We propose a broadband free-space on-chip spectrometer based on an array of integrated narrowband filters consisting of Fabry-Perot resonators formed by two high-contrast grating (HCG) based reflectors separated by a low-index thin layer with a fixed cavity thickness. Using numerical simulations, broadband tunability of resonance wavelengths was achieved only by changing the in-plane grating parameters such as period or duty cycle of HCGs while the substrate geometry was kept fixed. Experimentally, the HCG reflectors were fabricated on silicon on insulator (SOI) substrates and high reflectivity was measured, fabrication process for the proposed double HCG-based narrowband filter array was developed. The filtering function that can be spanned over a wide range of wavelengths was measured.

Rough SERS substrate based on gold coated porous silicon layer prepared on the silicon backside surface

NASA Astrophysics Data System (ADS)

Dridi, H.; Haji, L.; Moadhen, A.

2017-04-01

We report in this paper a novel method to elaborate rough Surface Enhanced Raman Scattering (SERS) substrate. A single layer of porous silicon was formed on the silicon backside surface. Morphological characteristics of the porous silicon layer before and after gold deposition were influenced by the rough character (gold size). The reflectance measurements showed a dependence of the gold nano-grains size on the surface nature, through the Localized Surface Plasmon (LSP) band properties. SERS signal of Rhodamine 6G used as a model analyte, adsorbed on the rough porous silicon layer revealed a marked enhancement of its vibrational modes intensities.

Method of forming contacts for a back-contact solar cell

DOEpatents

Manning, Jane

2015-10-20

Methods of forming contacts for solar cells are described. In one embodiment, a method includes forming a silicon layer above a substrate, forming and patterning a solid-state p-type dopant source on the silicon layer, forming an n-type dopant source layer over exposed regions of the silicon layer and over a plurality of regions of the solid-state p-type dopant source, and heating the substrate to provide a plurality of n-type doped silicon regions among a plurality of p-type doped silicon regions.

Method of forming contacts for a back-contact solar cell

DOEpatents

Manning, Jane

2014-07-15

Methods of forming contacts for solar cells are described. In one embodiment, a method includes forming a silicon layer above a substrate, forming and patterning a solid-state p-type dopant source on the silicon layer, forming an n-type dopant source layer over exposed regions of the silicon layer and over a plurality of regions of the solid-state p-type dopant source, and heating the substrate to provide a plurality of n-type doped silicon regions among a plurality of p-type doped silicon regions.

Influence of the Surface Layer on the Electrochemical Deposition of Metals and Semiconductors into Mesoporous Silicon

DOE Office of Scientific and Technical Information (OSTI.GOV)

Chubenko, E. B., E-mail: eugene.chubenko@gmail.com; Redko, S. V.; Sherstnyov, A. I.

2016-03-15

The influence of the surface layer on the process of the electrochemical deposition of metals and semiconductors into porous silicon is studied. It is shown that the surface layer differs in structure and electrical characteristics from the host porous silicon bulk. It is established that a decrease in the conductivity of silicon crystallites that form the surface layer of porous silicon has a positive effect on the process of the filling of porous silicon with metals and semiconductors. This is demonstrated by the example of nickel and zinc oxide. The effect can be used for the formation of nanocomposite materialsmore » on the basis of porous silicon and nanostructures with a high aspect ratio.« less

Memory device using movement of protons

DOEpatents

Warren, William L.; Vanheusden, Karel J. R.; Fleetwood, Daniel M.; Devine, Roderick A. B.; Archer, Leo B.; Brown, George A.; Wallace, Robert M.

2000-01-01

An enhancement of an electrically written memory element utilizing the motion of protons within a dielectric layer surrounded by layers on either side to confine the protons within the dielectric layer with electrode means attached to the surrounding layers to change the spatial position of the protons within the dielectric layer. The device is preferably constructed as a silicon-silicon dioxide-silicon layered structure with the protons being introduced to the structure during an anneal in an atmosphere containing hydrogen gas. Device operation is enhanced by concluding this anneal step with a sudden cooling. The device operates at low power, is preferably nonvolatile, is radiation tolerant, and is compatible with convention silicon MOS processing for integration with other microelectronics elements on the same silicon substrate.

Metallic coatings on silicon substrates, and methods of forming metallic coatings on silicon substrates

DOEpatents

Branagan, Daniel J [Idaho Falls, ID; Hyde, Timothy A [Idaho Falls, ID; Fincke, James R [Los Alamos, NM

2008-03-11

The invention includes methods of forming a metallic coating on a substrate which contains silicon. A metallic glass layer is formed over a silicon surface of the substrate. The invention includes methods of protecting a silicon substrate. The substrate is provided within a deposition chamber along with a deposition target. Material from the deposition target is deposited over at least a portion of the silicon substrate to form a protective layer or structure which contains metallic glass. The metallic glass comprises iron and one or more of B, Si, P and C. The invention includes structures which have a substrate containing silicon and a metallic layer over the substrate. The metallic layer contains less than or equal to about 2 weight % carbon and has a hardness of at least 9.2 GPa. The metallic layer can have an amorphous microstructure or can be devitrified to have a nanocrystalline microstructure.

Buried Porous Silicon-Germanium Layers in Monocrystalline Silicon Lattices

NASA Technical Reports Server (NTRS)

Fathauer, Robert W. (Inventor); George, Thomas (Inventor); Jones, Eric W. (Inventor)

1998-01-01

Monocrystalline semiconductor lattices with a buried porous semiconductor layer having different chemical composition is discussed and monocrystalline semiconductor superlattices with a buried porous semiconductor layers having different chemical composition than that of its monocrystalline semiconductor superlattice are discussed. Lattices of alternating layers of monocrystalline silicon and porous silicon-germanium have been produced. These single crystal lattices have been fabricated by epitaxial growth of Si and Si-Ge layers followed by patterning into mesa structures. The mesa structures are strain etched resulting in porosification of the Si-Ge layers with a minor amount of porosification of the monocrystalline Si layers. Thicker Si-Ge layers produced in a similar manner emitted visible light at room temperature.

Origin of Photovoltage Enhancement via Interfacial Modification with Silver Nanoparticles Embedded in an a-SiC:H p-Type Layer in a-Si:H Solar Cells.

PubMed

Li, Tiantian; Zhang, Qixing; Ni, Jian; Huang, Qian; Zhang, Dekun; Li, Baozhang; Wei, Changchun; Yan, Baojie; Zhao, Ying; Zhang, Xiaodan

2017-03-29

We used silver nanoparticles (Ag-NPs) embedded in the p-type semiconductor layer of hydrogenated amorphous silicon (a-Si:H) solar cells in the Schottky barrier contact design to modify the interface between aluminum-doped ZnO (ZnO:Al, AZO) and p-type hydrogenated amorphous silicon carbide (p-a-SiC:H) without plasmonic absorption. The high work function of the Ag-NPs provided a good channel for the transport of photogenerated holes. A p-type nanocrystalline SiC:H layer was used to compensate for the real surface defects and voids on the surface of Ag-NPs to reduce recombination at the AZO/p-type layer interface, which then enhanced the photovoltage of single-junction a-Si:H solar cells to values as high as 1.01 V. The Ag-NPs were around 10 nm in diameter and thermally stable in the p-type a-SiC:H film at the solar-cell process temperature. We will also show that a wide range of photovoltages between 1.01 and 2.89 V could be obtained with single-, double-, and triple-junction solar cells based on the single-junction a-Si:H solar cells with tunable high photovoltage. These solar cells are suitable photocathodes for solar water-splitting applications.

Influence of intermediate layers on the surface condition of laser crystallized silicon thin films and solar cell performance

DOE Office of Scientific and Technical Information (OSTI.GOV)

Höger, Ingmar, E-mail: ingmar.hoeger@ipht-jena.de; Gawlik, Annett; Brückner, Uwe

The intermediate layer (IL) between glass substrate and silicon plays a significant role in the optimization of multicrystalline liquid phase crystallized silicon thin film solar cells on glass. This study deals with the influence of the IL on the surface condition and the required chemical surface treatment of the crystallized silicon (mc-Si), which is of particular interest for a-Si:H heterojunction thin film solar cells. Two types of IL were investigated: sputtered silicon nitride (SiN) and a layer stack consisting of silicon nitride and silicon oxide (SiN/SiO). X-ray photoelectron spectroscopy measurements revealed the formation of silicon oxynitride (SiO{sub x}N{sub y}) ormore » silicon oxide (SiO{sub 2}) layers at the surface of the mc-Si after liquid phase crystallization on SiN or SiN/SiO, respectively. We propose that SiO{sub x}N{sub y} formation is governed by dissolving nitrogen from the SiN layer in the silicon melt, which segregates at the crystallization front during crystallization. This process is successfully hindered, when additional SiO layers are introduced into the IL. In order to achieve solar cell open circuit voltages above 500 mV, a removal of the formed SiO{sub x}N{sub y} top layer is required using sophisticated cleaning of the crystallized silicon prior to a-Si:H deposition. However, solar cells crystallized on SiN/SiO yield high open circuit voltage even when a simple wet chemical surface treatment is applied. The implementation of SiN/SiO intermediate layers facilitates the production of mesa type solar cells with open circuit voltages above 600 mV and a power conversion efficiency of 10%.« less

Method utilizing laser-processing for the growth of epitaxial p-n junctions

DOEpatents

Young, R.T.; Narayan, J.; Wood, R.F.

1979-11-23

This invention is a new method for the formation of epitaxial p-n junctions in silicon. The method is relatively simple, rapid, and reliable. It produces doped epitaxial layers which are of well-controlled thickness and whose electrical properties are satisfactory. An illustrative form of the method comprises co-depositing a selected dopant and amorphous silicon on a crystalline silicon substrate to form a doped layer of amorphous silicon thereon. This layer then is irradiated with at least one laser pulse to generate a melt front which moves through the layer, into the silicon body to a depth effecting melting of virginal silicon, and back to the surface of the layer. The method may be conducted with dopants (e.g., boron and phosphorus) whose distribution coefficients approximate unity.

Controllable synthesis and optical properties of novel ZnO cone arrays via vapor transport at low temperature.

PubMed

Han, Xinhai; Wang, Guanzhong; Jie, Jiansheng; Choy, Wallace C H; Luo, Yi; Yuk, T I; Hou, J G

2005-02-24

Novel ZnO cone arrays with controllable morphologies have been synthesized on silicon (100) substrates by thermal evaporation of metal Zn powder at a low temperature of 570 degrees C without a metal catalyst. Clear structure evolutions were observed using scanning electron microscopy: well-aligned ZnO nanocones, double-cones with growing head cones attached by stem cones, and cones with straight hexagonal pillar were obtained as the distance between the source and the substrates was increased. X-ray diffraction shows that all cone arrays grow along the c-axis. Raman and photoluminescence spectra reveal that the optical properties of the buffer layer between the ZnO cone arrays and the silicon substrates are better than those of the ZnO cone arrays due to high concentration of Zn in the heads of the ZnO cone arrays and higher growth temperature of the buffer layer. The growth of ZnO arrays reveals that the cone arrays are synthesized through a self-catalyzed vapor-liquid-solid (VLS) process.

Growth of silicon nanoclusters in thermal silicon dioxide under annealing in an atmosphere of nitrogen

DOE Office of Scientific and Technical Information (OSTI.GOV)

Ivanova, E. V., E-mail: Ivanova@mail.ioffe.ru; Sitnikova, A. A.; Aleksandrov, O. V.

2016-06-15

It is found for the first time that silicon nanoclusters are formed in the surface layer of thermal silicon dioxide under high-temperature annealing (T = 1150°C) in dried nitrogen. Analysis of the cathodoluminescence spectra shows that an imperfect surface layer appears upon such annealing of silicon dioxide, with silicon nanoclusters formed in this layer upon prolonged annealing. Transmission electron microscopy demonstrated that the silicon clusters are 3–5.5 nm in size and lie at a depth of about 10 nm from the surface. Silicon from the thermal film of silicon dioxide serves as the material from which the silicon nanoclusters aremore » formed. This method of silicon-nanocluster formation is suggested for the first time.« less

Improved toughness of silicon carbide

NASA Technical Reports Server (NTRS)

Palm, J. A.

1975-01-01

Several techniques were employed to apply or otherwise form porous layers of various materials on the surface of hot-pressed silicon carbide ceramic. From mechanical properties measurements and studies, it was concluded that although porous layers could be applied to the silicon carbide ceramic, sufficient damage was done to the silicon carbide surface by the processing required so as to drastically reduce its mechanical strength. It was further concluded that there was little promise of success in forming an effective energy absorbing layer on the surface of already densified silicon carbide ceramic that would have the mechanical strength of the untreated or unsurfaced material. Using a process for the pressureless sintering of silicon carbide powders it was discovered that porous layers of silicon carbide could be formed on a dense, strong silicon carbide substrate in a single consolidation process.

Amorphous silicon Schottky barrier solar cells incorporating a thin insulating layer and a thin doped layer

DOEpatents

Carlson, David E.

1980-01-01

Amorphous silicon Schottky barrier solar cells which incorporate a thin insulating layer and a thin doped layer adjacent to the junction forming metal layer exhibit increased open circuit voltages compared to standard rectifying junction metal devices, i.e., Schottky barrier devices, and rectifying junction metal insulating silicon devices, i.e., MIS devices.

Micromachining of silicon carbide on silicon fabricated by low-pressure chemical vapour deposition

NASA Astrophysics Data System (ADS)

Behrens, Ingo; Peiner, Erwin; Bakin, Andrey S.; Schlachetzki, Andreas

2002-07-01

We describe the fabrication of silicon carbide layers for micromechanical applications using low-pressure metal-organic chemical vapour deposition at temperatures below 1000 °C. The layers can be structured by lift-off using silicon dioxide as a sacrificial layer. A large selectivity with respect to silicon can be exploited for bulk micromachining. Thin membranes are fabricated which exhibit high mechanical quality, as necessary for applications in harsh environments.

Fabricating amorphous silicon solar cells by varying the temperature _of the substrate during deposition of the amorphous silicon layer

DOEpatents

Carlson, David E.

1982-01-01

An improved process for fabricating amorphous silicon solar cells in which the temperature of the substrate is varied during the deposition of the amorphous silicon layer is described. Solar cells manufactured in accordance with this process are shown to have increased efficiencies and fill factors when compared to solar cells manufactured with a constant substrate temperature during deposition of the amorphous silicon layer.

Strong White Photoluminescence from Carbon-Incorporated Silicon Oxide Fabricated by Preferential Oxidation of Silicon in Nano-Structured Si:C Layer

NASA Astrophysics Data System (ADS)

Vasin, Andriy V.; Ishikawa, Yukari; Shibata, Noriyoshi; Salonen, Jarno; Lehto, Vesa-Pekka

2007-05-01

A new approach to development of light-emitting SiO2:C layers on Si wafer is demonstrated. Carbon-incorporated silicon oxide was fabricated by three-step procedure: (1) formation of the porous silicon (por-Si) layer by ordinary anodization in HF:ethanol solution; (2) carbonization at 1000 °C in acetylene flow (formation of por-Si:C layer); (3) oxidation in the flow of moisturized argon at 800 °C (formation of SiO2:C layer). Resulting SiO2:C layer exhibited very strong and stable white photoluminescence at room temperature. It is shown that high reactivity of water vapor with nano-crystalline silicon and inertness with amorphous carbon play a key role in the formation of light-emitting SiO2:C layer.

Improved method of preparing p-i-n junctions in amorphous silicon semiconductors

DOEpatents

Madan, A.

1984-12-10

A method of preparing p/sup +/-i-n/sup +/ junctions for amorphous silicon semiconductors includes depositing amorphous silicon on a thin layer of trivalent material, such as aluminum, indium, or gallium at a temperature in the range of 200/sup 0/C to 250/sup 0/C. At this temperature, the layer of trivalent material diffuses into the amorphous silicon to form a graded p/sup +/-i junction. A layer of n-type doped material is then deposited onto the intrinsic amorphous silicon layer in a conventional manner to finish forming the p/sup +/-i-n/sup +/ junction.

Design of a 1200-V ultra-thin partial SOI LDMOS with n-type buried layer

NASA Astrophysics Data System (ADS)

Qiao, Ming; Wang, Yuru; Li, Yanfei; Zhang, Bo; Li, Zhaoji

2014-11-01

A novel 1200-V ultra-thin partial silicon-on-insulator (PSOI) lateral double-diffusion metal oxide semiconductor (LDMOS) with n-type buried (n-buried) layer (NBL PSOI LDMOS) is proposed in this paper. The new PSOI LDMOS features an n-buried layer underneath the n-type drift (n-drift) region close to the source side, providing a large conduction region for majority carriers and a silicon window to improve self-heating effect (SHE). A combination of uniform and linear variable doping (ULVD) profile is utilized in the n-drift region, which alleviates the inherent tradeoff between specific on-resistance (Ron,sp) and breakdown voltage (BV). With the n-drift region length of 80 μm, the NBL PSOI LDMOS obtains a high BV of 1243 V which is improved by around 105 V in comparison to the conventional SOI LDMOS with linear variable doping (LVD) profile for the n-drift region (LVD SOI LDMOS). Besides, the 1200-V NBL PSOI LDMOS has a lower maximum temperature (Tmax) of 333 K at a power (P) of 1 mW/μm which is reduced by around 61 K. Meanwhile, Ron,sp and Tmax of the NBL PSOI LDMOS are lower than those of the conventional LVD SOI LDMOS for a wide range of BV.

Double stabilization of nanocrystalline silicon: a bonus from solvent

NASA Astrophysics Data System (ADS)

Kolyagin, Y. G.; Zakharov, V. N.; Yatsenko, A. V.; Paseshnichenko, K. A.; Savilov, S. V.; Aslanov, L. A.

2016-01-01

Double stabilization of the silicon nanocrystals was observed for the first time by 29Si and 13C MAS NMR spectroscopy. The role of solvent, 1,2-dimethoxyethane (glyme), in formation and stabilization of silicon nanocrystals as well as mechanism of modification of the surface of silicon nanocrystals by nitrogen-heterocyclic carbene (NHC) was studied in this research. It was shown that silicon nanocrystals were stabilized by the products of cleavage of the C-O bonds in ethers and similar compounds. The fact of stabilization of silicon nanoparticles with NHC ligands in glyme was experimentally detected. It was demonstrated that MAS NMR spectroscopy is rather informative for study of the surface of silicon nanoparticles but it needs very pure samples.

Room-temperature bonding of epitaxial layer to carbon-cluster ion-implanted silicon wafers for CMOS image sensors

NASA Astrophysics Data System (ADS)

Koga, Yoshihiro; Kadono, Takeshi; Shigematsu, Satoshi; Hirose, Ryo; Onaka-Masada, Ayumi; Okuyama, Ryousuke; Okuda, Hidehiko; Kurita, Kazunari

2018-06-01

We propose a fabrication process for silicon wafers by combining carbon-cluster ion implantation and room-temperature bonding for advanced CMOS image sensors. These carbon-cluster ions are made of carbon and hydrogen, which can passivate process-induced defects. We demonstrated that this combination process can be used to form an epitaxial layer on a carbon-cluster ion-implanted Czochralski (CZ)-grown silicon substrate with a high dose of 1 × 1016 atoms/cm2. This implantation condition transforms the top-surface region of the CZ-grown silicon substrate into a thin amorphous layer. Thus, an epitaxial layer cannot be grown on this implanted CZ-grown silicon substrate. However, this combination process can be used to form an epitaxial layer on the amorphous layer of this implanted CZ-grown silicon substrate surface. This bonding wafer has strong gettering capability in both the wafer-bonding region and the carbon-cluster ion-implanted projection range. Furthermore, this wafer inhibits oxygen out-diffusion to the epitaxial layer from the CZ-grown silicon substrate after device fabrication. Therefore, we believe that this bonding wafer is effective in decreasing the dark current and white-spot defect density for advanced CMOS image sensors.

Structure for implementation of back-illuminated CMOS or CCD imagers

NASA Technical Reports Server (NTRS)

Pain, Bedabrata (Inventor); Cunningham, Thomas J. (Inventor)

2009-01-01

A structure for implementation of back-illuminated CMOS or CCD imagers. An epitaxial silicon layer is connected with a passivation layer, acting as a junction anode. The epitaxial silicon layer converts light passing through the passivation layer and collected by the imaging structure to photoelectrons. A semiconductor well is also provided, located opposite the passivation layer with respect to the epitaxial silicon layer, acting as a junction cathode. Prior to detection, light does not pass through a dielectric separating interconnection metal layers.

Photovoltaic Device Including A Boron Doping Profile In An I-Type Layer

DOEpatents

Yang, Liyou

1993-10-26

A photovoltaic cell for use in a single junction or multijunction photovoltaic device, which includes a p-type layer of a semiconductor compound including silicon, an i-type layer of an amorphous semiconductor compound including silicon, and an n-type layer of a semiconductor compound including silicon formed on the i-type layer. The i-type layer including an undoped first sublayer formed on the p-type layer, and a boron-doped second sublayer formed on the first sublayer.

Al2O3/SiON stack layers for effective surface passivation and anti-reflection of high efficiency n-type c-Si solar cells

NASA Astrophysics Data System (ADS)

Thi Thanh Nguyen, Huong; Balaji, Nagarajan; Park, Cheolmin; Triet, Nguyen Minh; Le, Anh Huy Tuan; Lee, Seunghwan; Jeon, Minhan; Oh, Donhyun; Dao, Vinh Ai; Yi, Junsin

2017-02-01

Excellent surface passivation and anti-reflection properties of double-stack layers is a prerequisite for high efficiency of n-type c-Si solar cells. The high positive fixed charge (Q f) density of N-rich hydrogenated amorphous silicon nitride (a-SiNx:H) films plays a poor role in boron emitter passivation. The more the refractive index ( n ) of a-SiNx:H is decreased, the more the positive Q f of a-SiNx:H is increased. Hydrogenated amorphous silicon oxynitride (SiON) films possess the properties of amorphous silicon oxide (a-SiOx) and a-SiNx:H with variable n and less positive Q f compared with a-SiNx:H. In this study, we investigated the passivation and anti-reflection properties of Al2O3/SiON stacks. Initially, a SiON layer was deposited by plasma enhanced chemical vapor deposition with variable n and its chemical composition was analyzed by Fourier transform infrared spectroscopy. Then, the SiON layer was deposited as a capping layer on a 10 nm thick Al2O3 layer, and the electrical and optical properties were analyzed. The SiON capping layer with n = 1.47 and a thickness of 70 nm resulted in an interface trap density of 4.74 = 1010 cm-2 eV-1 and Q f of -2.59 = 1012 cm-2 with a substantial improvement in lifetime of 1.52 ms after industrial firing. The incorporation of an Al2O3/SiON stack on the front side of the n-type solar cells results in an energy conversion efficiency of 18.34% compared to the one with Al2O3/a-SiNx:H showing 17.55% efficiency. The short circuit current density and open circuit voltage increase by up to 0.83 mA cm-2 and 12 mV, respectively, compared to the Al2O3/a-SiNx:H stack on the front side of the n-type solar cells due to the good anti-reflection and front side surface passivation.

Thin film silicon by a microwave plasma deposition technique: Growth and devices, and, interface effects in amorphous silicon/crystalline silicon solar cells

NASA Astrophysics Data System (ADS)

Jagannathan, Basanth

Thin film silicon (Si) was deposited by a microwave plasma CVD technique, employing double dilution of silane, for the growth of low hydrogen content Si films with a controllable microstructure on amorphous substrates at low temperatures (<400sp°C). The double dilution was achieved by using a Ar (He) carrier for silane and its subsequent dilution by Hsb2. Structural and electrical properties of the films have been investigated over a wide growth space (temperature, power, pressure and dilution). Amorphous Si films deposited by silane diluted in He showed a compact nature and a hydrogen content of ˜8 at.% with a photo/dark conductivity ratio of 10sp4. Thin film transistors (W/L = 500/25) fabricated on these films, showed an on/off ratio of ˜10sp6 and a low threshold voltage of 2.92 volts. Microcrystalline Si films with a high crystalline content (˜80%) were also prepared by this technique. Such films showed a dark conductivity ˜10sp{-6} S/cm, with a conduction activation energy of 0.49 eV. Film growth and properties have been compared for deposition in Ar and He carrier systems and growth models have been proposed. Low temperature junction formation by undoped thin film silicon was examined through a thin film silicon/p-type crystalline silicon heterojunctions. The thin film silicon layers were deposited by rf glow discharge, dc magnetron sputtering and microwave plasma CVD. The hetero-interface was identified by current transport analysis and high frequency capacitance methods as the key parameter controlling the photovoltaic (PV) response. The effect of the interface on the device properties (PV, junction, and carrier transport) was examined with respect to modifications created by chemical treatment, type of plasma species, their energy and film microstructure interacting with the substrate. Thermally stimulated capacitance was used to determine the interfacial trap parameters. Plasma deposition of thin film silicon on chemically clean c-Si created electron trapping sites while hole traps were seen when a thin oxide was present at the interface. Under optimized conditions, a 10.6% efficient cell (11.5% with SiOsb2 A/R) with an open circuit voltage of 0.55 volts and a short circuit current density of 30 mA/cmsp2 was fabricated.

Brillouin Optomechanics in Coupled Silicon Microcavities

NASA Astrophysics Data System (ADS)

Espinel, Y. A. V.; Santos, F. G. S.; Luiz, G. O.; Alegre, T. P. Mayer; Wiederhecker, G. S.

2017-03-01

The simultaneous control of optical and mechanical waves has enabled a range of fundamental and technological breakthroughs, from the demonstration of ultra-stable frequency reference devices, to the exploration of the quantum-classical boundaries in optomechanical laser-cooling experiments. More recently, such an optomechanical interaction has been observed in integrated nano-waveguides and microcavities in the Brillouin regime, where short-wavelength mechanical modes scatter light at several GHz. Here we engineer coupled optical microcavities to enable a low threshold excitation of mechanical travelling-wave modes through backward stimulated Brillouin scattering. Exploring the backward scattering we propose silicon microcavity designs based on laterally coupled single and double-layer cavities, the proposed structures enable optomechanical coupling with very high frequency modes (11 to 25 GHz) and large optomechanical coupling rates (g0/2π) from 50 kHz to 90 kHz.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Vexler, M. I., E-mail: shulekin@mail.ioffe.ru; Grekhov, I. V.

The features of electron tunneling from or into the silicon valence band in a metal–insulator–semiconductor system with the HfO{sub 2}(ZrO{sub 2})/SiO{sub 2} double-layer insulator are theoretically analyzed for different modes. It is demonstrated that the valence-band current plays a less important role in structures with HfO{sub 2}(ZrO{sub 2})/SiO{sub 2} than in structures containing only silicon dioxide. In the case of a very wide-gap high-K oxide ZrO{sub 2}, nonmonotonic behavior related to tunneling through the upper barrier is predicted for the valence-band–metal current component. The use of an insulator stack can offer certain advantages for some devices, including diodes, bipolar tunnel-emittermore » transistors, and resonant-tunneling diodes, along with the traditional use of high-K insulators in a field-effect transistor.« less

A novel ultra-planar, long-stroke and low-voltage piezoelectric micromirror

NASA Astrophysics Data System (ADS)

Bakke, Thor; Vogl, Andreas; Żero, Oleg; Tyholdt, Frode; Johansen, Ib-Rune; Wang, Dag

2010-06-01

A novel piston-type micromirror with a stroke of up to 20 µm at 20 V formed out of a silicon-on-insulator wafer with integrated piezoelectric actuators was designed, fabricated and characterized. The peak-to-valley planarity of a 2 mm diameter mirror was better than 15 nm, and tip-to-tip tilt upon actuation less than 30 nm. A resonance frequency of 9.8 kHz was measured. Analytical and finite element models were developed and compared to measurements. The design is based on a silicon-on-insulator wafer where the circular mirror is formed out of the handle silicon, thus forming a thick, highly rigid and ultra-planar mirror surface. The mirror plate is connected to a supporting frame through a membrane formed out of the device silicon layer. A piezoelectric actuator made of lead-zirconate-titanate (PZT) thin film is structured on top of the membrane, providing mirror deflection by deformation of the membrane. Two actuator designs were tested: one with a single ring and the other with a double ring providing bidirectional movement of the mirror. The fabricated mirrors were characterized by white light interferometry to determine the static and temporal response as well as mirror planarity.

Selective etching of silicon carbide films

DOEpatents

Gao, Di; Howe, Roger T.; Maboudian, Roya

2006-12-19

A method of etching silicon carbide using a nonmetallic mask layer. The method includes providing a silicon carbide substrate; forming a non-metallic mask layer by applying a layer of material on the substrate; patterning the mask layer to expose underlying areas of the substrate; and etching the underlying areas of the substrate with a plasma at a first rate, while etching the mask layer at a rate lower than the first rate.

The Belle II Silicon Vertex Detector

NASA Astrophysics Data System (ADS)

Friedl, M.; Ackermann, K.; Aihara, H.; Aziz, T.; Bergauer, T.; Bozek, A.; Campbell, A.; Dingfelder, J.; Drasal, Z.; Frankenberger, A.; Gadow, K.; Gfall, I.; Haba, J.; Hara, K.; Hara, T.; Higuchi, T.; Himori, S.; Irmler, C.; Ishikawa, A.; Joo, C.; Kah, D. H.; Kang, K. H.; Kato, E.; Kiesling, C.; Kodys, P.; Kohriki, T.; Koike, S.; Kvasnicka, P.; Marinas, C.; Mayekar, S. N.; Mibe, T.; Mohanty, G. B.; Moll, A.; Negishi, K.; Nakayama, H.; Natkaniec, Z.; Niebuhr, C.; Onuki, Y.; Ostrowicz, W.; Park, H.; Rao, K. K.; Ritter, M.; Rozanska, M.; Saito, T.; Sakai, K.; Sato, N.; Schmid, S.; Schnell, M.; Shimizu, N.; Steininger, H.; Tanaka, S.; Tanida, K.; Taylor, G.; Tsuboyama, T.; Ueno, K.; Uozumi, S.; Ushiroda, Y.; Valentan, M.; Yamamoto, H.

2013-12-01

The KEKB machine and the Belle experiment in Tsukuba (Japan) are now undergoing an upgrade, leading to an ultimate luminosity of 8×1035 cm-2 s-1 in order to measure rare decays in the B system with high statistics. The previous vertex detector cannot cope with this 40-fold increase of luminosity and thus needs to be replaced. Belle II will be equipped with a two-layer Pixel Detector surrounding the beam pipe, and four layers of double-sided silicon strip sensors at higher radii than the old detector. The Silicon Vertex Detector (SVD) will have a total sensitive area of 1.13 m2 and 223,744 channels-twice as many as its predecessor. All silicon sensors will be made from 150 mm wafers in order to maximize their size and thus to reduce the relative contribution of the support structure. The forward part has slanted sensors of trapezoidal shape to improve the measurement precision and to minimize the amount of material as seen by particles from the vertex. Fast-shaping front-end amplifiers will be used in conjunction with an online hit time reconstruction algorithm in order to reduce the occupancy to the level of a few percent at most. A novel “Origami” chip-on-sensor scheme is used to minimize both the distance between strips and amplifier (thus reducing the electronic noise) as well as the overall material budget. This report gives an overview on the status of the Belle II SVD and its components, including sensors, front-end detector ladders, mechanics, cooling and the readout electronics.

Anti-reflection coating design for metallic terahertz meta-materials

DOE PAGES

Pancaldi, Matteo; Freeman, Ryan; Hudl, Matthias; ...

2018-01-26

We demonstrate a silicon-based, single-layer anti-reflection coating that suppresses the reflectivity of metals at near-infrared frequencies, enabling optical probing of nano-scale structures embedded in highly reflective surroundings. Our design does not affect the interaction of terahertz radiation with metallic structures that can be used to achieve terahertz near-field enhancement. We have verified the functionality of the design by calculating and measuring the reflectivity of both infrared and terahertz radiation from a silicon/gold double layer as a function of the silicon thickness. We have also fabricated the unit cell of a terahertz meta-material, a dipole antenna comprising two 20-nm thick extendedmore » gold plates separated by a 2 μm gap, where the terahertz field is locally enhanced. We used the time-domain finite element method to demonstrate that such near-field enhancement is preserved in the presence of the anti-reflection coating. Finally, we performed magneto-optical Kerr effect measurements on a single 3-nm thick, 1-μm wide magnetic wire placed in the gap of such a dipole antenna. The wire only occupies 2% of the area probed by the laser beam, but its magneto-optical response can be clearly detected. Our design paves the way for ultrafast time-resolved studies, using table-top femtosecond near-infrared lasers, of dynamics in nano-structures driven by strong terahertz radiation.« less

Anti-reflection coating design for metallic terahertz meta-materials

DOE Office of Scientific and Technical Information (OSTI.GOV)

Pancaldi, Matteo; Freeman, Ryan; Hudl, Matthias

We demonstrate a silicon-based, single-layer anti-reflection coating that suppresses the reflectivity of metals at near-infrared frequencies, enabling optical probing of nano-scale structures embedded in highly reflective surroundings. Our design does not affect the interaction of terahertz radiation with metallic structures that can be used to achieve terahertz near-field enhancement. We have verified the functionality of the design by calculating and measuring the reflectivity of both infrared and terahertz radiation from a silicon/gold double layer as a function of the silicon thickness. We have also fabricated the unit cell of a terahertz meta-material, a dipole antenna comprising two 20-nm thick extendedmore » gold plates separated by a 2 μm gap, where the terahertz field is locally enhanced. We used the time-domain finite element method to demonstrate that such near-field enhancement is preserved in the presence of the anti-reflection coating. Finally, we performed magneto-optical Kerr effect measurements on a single 3-nm thick, 1-μm wide magnetic wire placed in the gap of such a dipole antenna. The wire only occupies 2% of the area probed by the laser beam, but its magneto-optical response can be clearly detected. Our design paves the way for ultrafast time-resolved studies, using table-top femtosecond near-infrared lasers, of dynamics in nano-structures driven by strong terahertz radiation.« less

Anti-reflection coating design for metallic terahertz meta-materials.

PubMed

Pancaldi, Matteo; Freeman, Ryan; Hudl, Matthias; Hoffmann, Matthias C; Urazhdin, Sergei; Vavassori, Paolo; Bonetti, Stefano

2018-02-05

We demonstrate a silicon-based, single-layer anti-reflection coating that suppresses the reflectivity of metals at near-infrared frequencies, enabling optical probing of nano-scale structures embedded in highly reflective surroundings. Our design does not affect the interaction of terahertz radiation with metallic structures that can be used to achieve terahertz near-field enhancement. We have verified the functionality of the design by calculating and measuring the reflectivity of both infrared and terahertz radiation from a silicon/gold double layer as a function of the silicon thickness. We have also fabricated the unit cell of a terahertz meta-material, a dipole antenna comprising two 20-nm thick extended gold plates separated by a 2 μm gap, where the terahertz field is locally enhanced. We used the time-domain finite element method to demonstrate that such near-field enhancement is preserved in the presence of the anti-reflection coating. Finally, we performed magneto-optical Kerr effect measurements on a single 3-nm thick, 1-μm wide magnetic wire placed in the gap of such a dipole antenna. The wire only occupies 2% of the area probed by the laser beam, but its magneto-optical response can be clearly detected. Our design paves the way for ultrafast time-resolved studies, using table-top femtosecond near-infrared lasers, of dynamics in nano-structures driven by strong terahertz radiation.

Residual strain effects on large aspect ratio micro-diaphragms

DOE Office of Scientific and Technical Information (OSTI.GOV)

Hijab, R.S.; Muller, R.S.

1988-09-30

Highly compliant, large aspect ratio diaphragms for use in low-pressure, capacitive-readout sensors, have been investigated. In such structures, unrelaxed strain in the diaphragms can radically alter mechanical behavior. Although strain can be reduced by thermal annealing, it usually reaches a remnant irreducible minimum. The purpose of this paper is to describe techniques that result in low-strain materials and that reduce the effects of residual strain in micro-diaphragms. Square polysilicon grilles and perforated diaphragms made from both single and double polysilicon layers and from single-crystal silicon, with aspect ratios (side/thickness) of up to 1000 and very low compressive strain ({approx}6 {times}more » 10{sup {minus}5}), have been fabricated. Strain reduction is achieved by combining thermal annealing with one of two mechanical design techniques. The first technique makes use of a series of cantilever beams to support the diaphragms. In a second procedure, corrugated surfaces in thinned membranes of single-crystal silicon are formed. The corrugations result from the use of boron doping and anisotropic silicon etching. In both of these techniques to produce low-strain diaphragms, an etched cavity is purposely formed in the substrate crystal below them. Only one-sided processing of wafers is employed, thus aiding reproducibility and providing ease of compatibility with an MOS process. A fast-etching sacrificial-support layer (phosphorus-doped CVD oxide) is used. 4 refs., 10 figs.« less

Graphene Quantum Dot Layers with Energy-Down-Shift Effect on Crystalline-Silicon Solar Cells.

PubMed

Lee, Kyung D; Park, Myung J; Kim, Do-Yeon; Kim, Soo M; Kang, Byungjun; Kim, Seongtak; Kim, Hyunho; Lee, Hae-Seok; Kang, Yoonmook; Yoon, Sam S; Hong, Byung H; Kim, Donghwan

2015-09-02

Graphene quantum dot (GQD) layers were deposited as an energy-down-shift layer on crystalline-silicon solar cell surfaces by kinetic spraying of GQD suspensions. A supersonic air jet was used to accelerate the GQDs onto the surfaces. Here, we report the coating results on a silicon substrate and the GQDs' application as an energy-down-shift layer in crystalline-silicon solar cells, which enhanced the power conversion efficiency (PCE). GQD layers deposited at nozzle scan speeds of 40, 30, 20, and 10 mm/s were evaluated after they were used to fabricate crystalline-silicon solar cells; the results indicate that GQDs play an important role in increasing the optical absorptivity of the cells. The short-circuit current density was enhanced by about 2.94% (0.9 mA/cm(2)) at 30 mm/s. Compared to a reference device without a GQD energy-down-shift layer, the PCE of p-type silicon solar cells was improved by 2.7% (0.4 percentage points).

Lifting of Spin Blockade by Charged Impurities in Si-MOS Double Quantum Dot Devices

NASA Astrophysics Data System (ADS)

King, Cameron; Schoenfield, Joshua; Calderón, M. J.; Koiller, Belita; Saraiva, André; Hu, Xuedong; Jiang, Hong-Wen; Friesen, Mark; Coppersmith, S. N.

Fabricating quantum dots in silicon metal-oxide-semiconductor (MOS) for quantum information processing applications is attractive because of the long spin coherence times in silicon and the potential for leveraging the massive investments that have been made for scaling of the technology for classical electronics. One obstacle that has impeded the development of electrically gated MOS singlet-triplet qubits is the lack of observed spin blockade, where the tunneling of a second electron into a dot is fast when the two-electron state is a singlet and slow when the two-electron state is a triplet, even in samples with large singlet-triplet energy splittings. We show that this is a commonly exhibited problem in MOS double quantum dots, and present evidence that the cause is stray positive charges in the oxide layer inducing accidental dots near the device's active region that allow spin blockade lifting. This work was supported by ARO (W911NF-12-1-0607), NSF (IIA-1132804), the Department of Defense under Contract No. H98230-15-C 0453, ARO (W911NF-14-1-0346), NSF (OISE-1132804), ONR (N00014-15-1-0029), and ARO (W911NF-12-R-0012).

Late Quaternary to Holocene Geology, Geomorphology and Glacial History of Dawson Creek and Surrounding area, Northeast British Columbia, Canada

NASA Astrophysics Data System (ADS)

Henry, Edward Trowbridge

Semiconductor quantum dots in silicon demonstrate exceptionally long spin lifetimes as qubits and are therefore promising candidates for quantum information processing. However, control and readout techniques for these devices have thus far employed low frequency electrons, in contrast to high speed temperature readout techniques used in other qubit architectures, and coupling between multiple quantum dot qubits has not been satisfactorily addressed. This dissertation presents the design and characterization of a semiconductor charge qubit based on double quantum dot in silicon with an integrated microwave resonator for control and readout. The 6 GHz resonator is designed to achieve strong coupling with the quantum dot qubit, allowing the use of circuit QED control and readout techniques which have not previously been applicable to semiconductor qubits. To achieve this coupling, this document demonstrates successful operation of a novel silicon double quantum dot design with a single active metallic layer and a coplanar stripline resonator with a bias tee for dc excitation. Experiments presented here demonstrate quantum localization and measurement of both electrons on the quantum dot and photons in the resonator. Further, it is shown that the resonator-qubit coupling in these devices is sufficient to reach the strong coupling regime of circuit QED. The details of a measurement setup capable of performing simultaneous low noise measurements of the resonator and quantum dot structure are also presented here. The ultimate aim of this research is to integrate the long coherence times observed in electron spins in silicon with the sophisticated readout architectures available in circuit QED based quantum information systems. This would allow superconducting qubits to be coupled directly to semiconductor qubits to create hybrid quantum systems with separate quantum memory and processing components.

Anti-reflective device having an anti-reflective surface formed of silicon spikes with nano-tips

NASA Technical Reports Server (NTRS)

Bae, Youngsam (Inventor); Manohara, Harish (Inventor); Mobasser, Sohrab (Inventor); Lee, Choonsup (Inventor)

2011-01-01

Described is a device having an anti-reflection surface. The device comprises a silicon substrate with a plurality of silicon spikes formed on the substrate. A first metallic layer is formed on the silicon spikes to form the anti-reflection surface. The device further includes an aperture that extends through the substrate. A second metallic layer is formed on the substrate. The second metallic layer includes a hole that is aligned with the aperture. A spacer is attached with the silicon substrate to provide a gap between an attached sensor apparatus. Therefore, operating as a Micro-sun sensor, light entering the hole passes through the aperture to be sensed by the sensor apparatus. Additionally, light reflected by the sensor apparatus toward the first side of the silicon substrate is absorbed by the first metallic layer and silicon spikes and is thereby prevented from being reflected back toward the sensor apparatus.

Anti- reflective device having an anti-reflection surface formed of silicon spikes with nano-tips

NASA Technical Reports Server (NTRS)

Bae, Youngsman (Inventor); Mooasser, Sohrab (Inventor); Manohara, Harish (Inventor); Lee, Choonsup (Inventor); Bae, Kungsam (Inventor)

2009-01-01

Described is a device having an anti-reflection surface. The device comprises a silicon substrate with a plurality of silicon spikes formed on the substrate. A first metallic layer is formed on the silicon spikes to form the anti-reflection surface. The device further includes an aperture that extends through the substrate. A second metallic layer is formed on the substrate. The second metallic layer includes a hole that is aligned with the aperture. A spacer is attached with the silicon substrate to provide a gap between an attached sensor apparatus. Therefore, operating as a Micro-sun sensor, light entering the hole passes through the aperture to be sensed by the sensor apparatus. Additionally, light reflected by the sensor apparatus toward the first side of the silicon substrate is absorbed by the first metallic layer and silicon spikes and is thereby prevented from being reflected back toward the sensor apparatus.

High temperature and frequency pressure sensor based on silicon-on-insulator layers

NASA Astrophysics Data System (ADS)

Zhao, Y. L.; Zhao, L. B.; Jiang, Z. D.

2006-03-01

Based on silicon on insulator (SOI) technology, a novel high temperature pressure sensor with high frequency response is designed and fabricated, in which a buried silicon dioxide layer in the silicon material is developed by the separation by implantation of oxygen (SIMOX) technology. This layer can isolate leak currents between the top silicon layer for the detecting circuit and body silicon at a temperature of about 200 °C. In addition, the technology of silicon and glass bonding is used to create a package of the sensor without internal strain. A structural model and test data from the sensor are presented. The experimental results showed that this kind of sensor possesses good static performance in a high temperature environment and high frequency dynamic characteristics, which may satisfy the pressure measurement demands of the oil industry, aviation and space, and so on.

Y1Ba2Cu3O(6+delta) growth on thin Y-enhanced SiO2 buffer layers on silicon

NASA Technical Reports Server (NTRS)

Robin, T.; Mesarwi, A.; Wu, N. J.; Fan, W. C.; Espoir, L.; Ignatiev, A.; Sega, R.

1991-01-01

SiO2 buffer layers as thin as 2 nm have been developed for use in the growth of Y1Ba2Cu3O(6+delta) thin films on silicon substrates. The SiO2 layers are formed through Y enhancement of silicon oxidation, and are highly stoichiometric. Y1Ba2Cu3O(6+delta) film growth on silicon with thin buffer layers has shown c orientation and Tc0 = 78 K.

Hydrogen ion microlithography

DOEpatents

Tsuo, Y. Simon; Deb, Satyen K.

1990-01-01

Disclosed is a hydrogen ion microlithography process for use in microelectronic fabrication and semiconductor device processing. The process comprises the steps of providing a single layer of either an amorphous silicon or hydrogenated amorphous silicon material. A pattern is recorded in a selected layer of amorphous silicon or hydrogenated amorphous silicon materials by preferentially implanting hydrogen ions therein so as to permit the selected layer to serve as a mask-resist wafer suitable for subsequent development and device fabrication. The layer is developed to provide a surface pattern therein adaptable for subsequent use in microelectronic fabrication and semiconductor device processing.

Successful repair of a ventricular assist system percutaneous lead.

PubMed

Pantalos, G M; Marks, J D; Richardson, E E; Nelson, K E; Long, J W

1999-01-01

A patient with an implanted, electrically powered, ventricular assist device (Thermo Cardiosystems VE HeartMate) experienced a partial break of the percutaneous lead 5 months after implantation. The break (limited to the Silicone rubber tube) occurred at the junction of the lead with the Y-connector to the controller and vent, leaving approximately 5 cm of exposed lead from the skin exit site to the connector. Electronic and pumping functions of the pump continued, but the opening in the lead (which went more that half way around the circumference) prevented the use of pneumatic actuation as a back-up mode for pump operation, and placed the pump at risk for contamination. Repair of the lead without surgical intervention was desirable, with ease of repair and minimal risk to the patient being the top priorities. The use of multiple layers of heat-shrink tubing or external metal stents was ruled out in favor of a three stage repair procedure. The first stage involved the removal of the Dacron velour in-growth material from the lead to expose the underlying Silicone rubber tube. While the opening in the tube was held shut, a coating of medical grade Silicone rubber adhesive was applied to the tube, then wrapped with a woven Dacron mesh, followed by two layers of plastic wrapping material to protect the adhesive. This initial layer was secured by an external stent of tubing with cable ties. After several days to allow for complete curing of the adhesive, the adhesive coating with mesh was repeated. The final step involved a double layer wrap of a 1 mm thick Silicone rubber sheeting with mesh incorporation and adhesive secured in place with cable ties. After completion of the repair and verification of the ability to operate the device with pneumatic actuation, the patient was discharged with no recurrence of the problem after 8 months of weekly follow-up. This experience demonstrates the need to clinically anticipate component repair or replacement without total device replacement in future implantable blood pump systems.

Tunnel oxide passivated contacts formed by ion implantation for applications in silicon solar cells

DOE Office of Scientific and Technical Information (OSTI.GOV)

Reichel, Christian, E-mail: christian.reichel@ise.fraunhofer.de; National Renewable Energy Laboratory; Feldmann, Frank

Passivated contacts (poly-Si/SiO{sub x}/c-Si) doped by shallow ion implantation are an appealing technology for high efficiency silicon solar cells, especially for interdigitated back contact (IBC) solar cells where a masked ion implantation facilitates their fabrication. This paper presents a study on tunnel oxide passivated contacts formed by low-energy ion implantation into amorphous silicon (a-Si) layers and examines the influence of the ion species (P, B, or BF{sub 2}), the ion implantation dose (5 × 10{sup 14 }cm{sup −2} to 1 × 10{sup 16 }cm{sup −2}), and the subsequent high-temperature anneal (800 °C or 900 °C) on the passivation quality and junction characteristics using double-sided contacted silicon solar cells.more » Excellent passivation quality is achieved for n-type passivated contacts by P implantations into either intrinsic (undoped) or in-situ B-doped a-Si layers with implied open-circuit voltages (iV{sub oc}) of 725 and 720 mV, respectively. For p-type passivated contacts, BF{sub 2} implantations into intrinsic a-Si yield well passivated contacts and allow for iV{sub oc} of 690 mV, whereas implanted B gives poor passivation with iV{sub oc} of only 640 mV. While solar cells featuring in-situ B-doped selective hole contacts and selective electron contacts with P implanted into intrinsic a-Si layers achieved V{sub oc} of 690 mV and fill factor (FF) of 79.1%, selective hole contacts realized by BF{sub 2} implantation into intrinsic a-Si suffer from drastically reduced FF which is caused by a non-Ohmic Schottky contact. Finally, implanting P into in-situ B-doped a-Si layers for the purpose of overcompensation (counterdoping) allowed for solar cells with V{sub oc} of 680 mV and FF of 80.4%, providing a simplified and promising fabrication process for IBC solar cells featuring passivated contacts.« less

In-depth porosity control of mesoporous silicon layers by an anodization current adjustment

NASA Astrophysics Data System (ADS)

Lascaud, J.; Defforge, T.; Certon, D.; Valente, D.; Gautier, G.

2017-12-01

The formation of thick mesoporous silicon layers in P+-type substrates leads to an increase in the porosity from the surface to the interface with silicon. The adjustment of the current density during the electrochemical etching of porous silicon is an intuitive way to control the layer in-depth porosity. The duration and the current density during the anodization were varied to empirically model porosity variations with layer thickness and build a database. Current density profiles were extracted from the model in order to etch layer with in-depth control porosity. As a proof of principle, an 80 μm-thick porous silicon multilayer was synthetized with decreasing porosities from 55% to 35%. The results show that the assessment of the in-depth porosity could be significantly enhanced by taking into account the pure chemical etching of the layer in the hydrofluoric acid-based electrolyte.

Application of porous silicon in solar cell

NASA Astrophysics Data System (ADS)

Maniya, Nalin H.; Ashokan, Jibinlal; Srivastava, Divesh N.

2018-05-01

Silicon is widely used in solar cell applications with over 95% of all solar cells produced worldwide composed of silicon. Nanostructured thin porous silicon (PSi) layer acting as anti-reflecting coating is used in photovoltaic solar cells due to its advantages including simple and low cost fabrication, highly textured surfaces enabling lowering of reflectance, controllability of thickness and porosity of layer, and high surface area. PSi layers have previously been reported to reduce the reflection of light and replaced the conventional anti-reflective coating layers on solar cells. This can essentially improve the efficiency and decrease the cost of silicon solar cells. Here, we investigate the reflectance of different PSi layers formed by varying current density and etching time. PSi layers were formed by a combination of current density including 60 and 80 mA/cm2 and time for fabrication as 2, 4, 6, and 8 seconds. The fabricated PSi layers were characterized using reflectance spectroscopy and field emission scanning electron microscopy. Thickness and pore size of PSi layer were increased with increase in etching time and current density, respectively. The reflectance of PSi layers was decreased with increase in etching time until 6 seconds and increased again after 6 seconds, which was observed across both the current density. Reduction in reflectance indicates the increase of absorption of light by silicon due to the thin PSi layer. In comparison with the reflectance of silicon wafer, PSi layer fabricated at 80 mA/cm2 for 6 seconds gave the best result with reduction in reflectance up to 57%. Thus, the application of PSi layer as an effective anti-reflecting coating for the fabrication of solar cell has been demonstrated.

Effect of layer thickness on device response of silicon heavily supersaturated with sulfur

DOE Office of Scientific and Technical Information (OSTI.GOV)

Hutchinson, David; Department of Physics and Nuclear Engineering, United States Military Academy, West Point NY 10996; Mathews, Jay

2016-05-15

We report on a simple experiment in which the thickness of a hyperdoped silicon layer, supersaturated with sulfur by ion implantation followed by pulsed laser melting and rapid solidification, is systematically varied at constant average sulfur concentration, by varying the implantation energy, dose, and laser fluence. Contacts are deposited and the external quantum efficiency (EQE) is measured for visible wavelengths. We posit that the sulfur layer primarily absorbs light but contributes negligible photocurrent, and we seek to support this by analyzing the EQE data for the different layer thicknesses in two interlocking ways. In the first, we use the measuredmore » concentration depth profiles to obtain the approximate layer thicknesses, and, for each wavelength, fit the EQE vs. layer thickness curve to obtain the absorption coefficient of hyperdoped silicon for that wavelength. Comparison to literature values for the hyperdoped silicon absorption coefficients [S.H. Pan et al. Applied Physics Letters 98, 121913 (2011)] shows good agreement. Next, we essentially run this process in reverse; we fit with Beer’s law the curves of EQE vs. hyperdoped silicon absorption coefficient for those wavelengths that are primarily absorbed in the hyperdoped silicon layer, and find that the layer thicknesses obtained from the fit are in good agreement with the original values obtained from the depth profiles. We conclude that the data support our interpretation of the hyperdoped silicon layer as providing negligible photocurrent at high S concentrations. This work validates the absorption data of Pan et al. [Applied Physics Letters 98, 121913 (2011)], and is consistent with reports of short mobility-lifetime products in hyperdoped layers. It suggests that for optoelectronic devices containing hyperdoped layers, the most important contribution to the above band gap photoresponse may be due to photons absorbed below the hyperdoped layer.« less

Silicon carbide-free graphene growth on silicon for lithium-ion battery with high volumetric energy density

PubMed Central

Son, In Hyuk; Hwan Park, Jong; Kwon, Soonchul; Park, Seongyong; Rümmeli, Mark H.; Bachmatiuk, Alicja; Song, Hyun Jae; Ku, Junhwan; Choi, Jang Wook; Choi, Jae-man; Doo, Seok-Gwang; Chang, Hyuk

2015-01-01

Silicon is receiving discernable attention as an active material for next generation lithium-ion battery anodes because of its unparalleled gravimetric capacity. However, the large volume change of silicon over charge–discharge cycles weakens its competitiveness in the volumetric energy density and cycle life. Here we report direct graphene growth over silicon nanoparticles without silicon carbide formation. The graphene layers anchored onto the silicon surface accommodate the volume expansion of silicon via a sliding process between adjacent graphene layers. When paired with a commercial lithium cobalt oxide cathode, the silicon carbide-free graphene coating allows the full cell to reach volumetric energy densities of 972 and 700 Wh l−1 at first and 200th cycle, respectively, 1.8 and 1.5 times higher than those of current commercial lithium-ion batteries. This observation suggests that two-dimensional layered structure of graphene and its silicon carbide-free integration with silicon can serve as a prototype in advancing silicon anodes to commercially viable technology. PMID:26109057

Method for producing silicon thin-film transistors with enhanced forward current drive

DOEpatents

Weiner, K.H.

1998-06-30

A method is disclosed for fabricating amorphous silicon thin film transistors (TFTs) with a polycrystalline silicon surface channel region for enhanced forward current drive. The method is particularly adapted for producing top-gate silicon TFTs which have the advantages of both amorphous and polycrystalline silicon TFTs, but without problem of leakage current of polycrystalline silicon TFTs. This is accomplished by selectively crystallizing a selected region of the amorphous silicon, using a pulsed excimer laser, to create a thin polycrystalline silicon layer at the silicon/gate-insulator surface. The thus created polysilicon layer has an increased mobility compared to the amorphous silicon during forward device operation so that increased drive currents are achieved. In reverse operation the polysilicon layer is relatively thin compared to the amorphous silicon, so that the transistor exhibits the low leakage currents inherent to amorphous silicon. A device made by this method can be used, for example, as a pixel switch in an active-matrix liquid crystal display to improve display refresh rates. 1 fig.

Method for producing silicon thin-film transistors with enhanced forward current drive

DOEpatents

Weiner, Kurt H.

1998-01-01

A method for fabricating amorphous silicon thin film transistors (TFTs) with a polycrystalline silicon surface channel region for enhanced forward current drive. The method is particularly adapted for producing top-gate silicon TFTs which have the advantages of both amorphous and polycrystalline silicon TFTs, but without problem of leakage current of polycrystalline silicon TFTs. This is accomplished by selectively crystallizing a selected region of the amorphous silicon, using a pulsed excimer laser, to create a thin polycrystalline silicon layer at the silicon/gate-insulator surface. The thus created polysilicon layer has an increased mobility compared to the amorphous silicon during forward device operation so that increased drive currents are achieved. In reverse operation the polysilicon layer is relatively thin compared to the amorphous silicon, so that the transistor exhibits the low leakage currents inherent to amorphous silicon. A device made by this method can be used, for example, as a pixel switch in an active-matrix liquid crystal display to improve display refresh rates.

Double Layers in Astrophysics

NASA Technical Reports Server (NTRS)

Williams, Alton C. (Editor); Moorehead, Tauna W. (Editor)

1987-01-01

Topics addressed include: laboratory double layers; ion-acoustic double layers; pumping potential wells; ion phase-space vortices; weak double layers; electric fields and double layers in plasmas; auroral double layers; double layer formation in a plasma; beamed emission from gamma-ray burst source; double layers and extragalactic jets; and electric potential between plasma sheet clouds.

System and Method for Fabricating Super Conducting Circuitry on Both Sides of an Ultra-Thin Layer

NASA Technical Reports Server (NTRS)

Brown, Ari D. (Inventor); Mikula, Vilem (Inventor)

2017-01-01

A method of fabricating circuitry in a wafer includes depositing a superconducting metal on a silicon on insulator wafer having a handle wafer, coating the wafer with a sacrificial layer and bonding the wafer to a thermally oxide silicon wafer with a first epoxy. The method includes flipping the wafer, thinning the flipped wafer by removing a handle wafer, etching a buried oxide layer, depositing a superconducting layer, bonding the wafer to a thermally oxidized silicon wafer having a handle wafer using an epoxy, flipping the wafer again, thinning the flipped wafer, etching a buried oxide layer from the wafer and etching the sacrificial layer from the wafer. The result is a wafer having superconductive circuitry on both sides of an ultra-thin silicon layer.

Process for Fabrication of Superconducting Vias for Electrical Connection to Groundplane in Cryogenic Detectors

NASA Technical Reports Server (NTRS)

Denis, Kevin L. (Inventor)

2018-01-01

Disclosed are systems, methods, and non-transitory computer-readable storage media for fabrication of silicon on insulator (SOI) wafers with a superconductive via for electrical connection to a groundplane. Fabrication of the SOI wafer with a superconductive via can involve depositing a superconducting groundplane onto a substrate with the superconducting groundplane having an oxidizing layer and a non-oxidizing layer. A layer of monocrystalline silicon can be bonded to the superconducting groundplane and a photoresist layer can be applied to the layer of monocrystalline silicon and the SOI wafer can be etched with the oxygen rich etching plasma, resulting in a monocrystalline silicon top layer with a via that exposes the superconducting groundplane. Then, the fabrication can involve depositing a superconducting surface layer to cover the via.

Photo-EMF Sensitivity of Porous Silicon Thin Layer–Crystalline Silicon Heterojunction to Ammonia Adsorption

PubMed Central

Vashpanov, Yuriy; Jung, Jae Il; Kwack, Kae Dal

2011-01-01

A new method of using photo-electromotive force in detecting gas and controlling sensitivity is proposed. Photo-electromotive force on the heterojunction between porous silicon thin layer and crystalline silicon wafer depends on the concentration of ammonia in the measurement chamber. A porous silicon thin layer was formed by electrochemical etching on p-type silicon wafer. A gas and light transparent electrical contact was manufactured to this porous layer. Photo-EMF sensitivity corresponding to ammonia concentration in the range from 10 ppm to 1,000 ppm can be maximized by controlling the intensity of illumination light. PMID:22319353

Silicon-on Ceramic Process: Silicon Sheet Growth and Device Development for the Large-area Silicon Sheet and Cell Development Tasks of the Low-cost Solar Array Project

NASA Technical Reports Server (NTRS)

Chapman, P. W.; Zook, J. D.; Heaps, J. D.; Grung, B. L.; Koepke, B.; Schuldt, S. B.

1979-01-01

The technical and economic feasibility of producing solar cell-quality silicon was investigated. This was done by coating one surface of carbonized ceramic substrates with a thin layer of large-grain polycrystalline silicon from the melt. Significant progress in the following areas was demonstrated: (1) fabricating a 10 sq cm cell having 9.9 percent conversion efficiency; (2) producing a 225 sq cm layer of sheet silicon; and (3) obtaining 100 microns thick coatings at pull speed of 0.15 cm/sec, although approximately 50 percent of the layer exhibited dendritic growth.

Process for utilizing low-cost graphite substrates for polycrystalline solar cells

NASA Technical Reports Server (NTRS)

Chu, T. L. (Inventor)

1978-01-01

Low cost polycrystalline silicon solar cells supported on substrates were prepared by depositing successive layers of polycrystalline silicon containing appropriate dopants over supporting substrates of a member selected from the group consisting of metallurgical grade polycrystalline silicon, graphite and steel coated with a diffusion barrier of silica, borosilicate, phosphosilicate, or mixtures thereof such that p-n junction devices were formed which effectively convert solar energy to electrical energy. To improve the conversion efficiency of the polycrystalline silicon solar cells, the crystallite size in the silicon was substantially increased by melting and solidifying a base layer of polycrystalline silicon before depositing the layers which form the p-n junction.

Glass-silicon column

DOEpatents

Yu, Conrad M.

2003-12-30

A glass-silicon column that can operate in temperature variations between room temperature and about 450.degree. C. The glass-silicon column includes large area glass, such as a thin Corning 7740 boron-silicate glass bonded to a silicon wafer, with an electrode embedded in or mounted on glass of the column, and with a self alignment silicon post/glass hole structure. The glass/silicon components are bonded, for example be anodic bonding. In one embodiment, the column includes two outer layers of silicon each bonded to an inner layer of glass, with an electrode imbedded between the layers of glass, and with at least one self alignment hole and post arrangement. The electrode functions as a column heater, and one glass/silicon component is provided with a number of flow channels adjacent the bonded surfaces.

Raman Spectra of High-κ Dielectric Layers Investigated with Micro-Raman Spectroscopy Comparison with Silicon Dioxide

PubMed Central

Borowicz, P.; Taube, A.; Rzodkiewicz, W.; Latek, M.; Gierałtowska, S.

2013-01-01

Three samples with dielectric layers from high-κ dielectrics, hafnium oxide, gadolinium-silicon oxide, and lanthanum-lutetium oxide on silicon substrate were studied by Raman spectroscopy. The results obtained for high-κ dielectrics were compared with spectra recorded for silicon dioxide. Raman spectra suggest the similarity of gadolinium-silicon oxide and lanthanum-lutetium oxide to the bulk nondensified silicon dioxide. The temperature treatment of hafnium oxide shows the evolution of the structure of this material. Raman spectra recorded for as-deposited hafnium oxide are similar to the results obtained for silicon dioxide layer. After thermal treatment especially at higher temperatures (600°C and above), the structure of hafnium oxide becomes similar to the bulk non-densified silicon dioxide. PMID:24072982

Transfer of micro and nano-photonic silicon nanomembrane waveguide devices on flexible substrates.

PubMed

Ghaffari, Afshin; Hosseini, Amir; Xu, Xiaochuan; Kwong, David; Subbaraman, Harish; Chen, Ray T

2010-09-13

This paper demonstrates transfer of optical devices without extra un-patterned silicon onto low-cost, flexible plastic substrates using single-crystal silicon nanomembranes. Employing this transfer technique, stacking two layers of silicon nanomembranes with photonic crystal waveguide in the first layer and multi mode interference couplers in the second layer is shown, respectively. This technique is promising to realize high density integration of multilayer hybrid structures on flexible substrates.

N-Type delta Doping of High-Purity Silicon Imaging Arrays

NASA Technical Reports Server (NTRS)

Blacksberg, Jordana; Hoenk, Michael; Nikzad, Shouleh

2005-01-01

A process for n-type (electron-donor) delta doping has shown promise as a means of modifying back-illuminated image detectors made from n-doped high-purity silicon to enable them to detect high-energy photons (ultraviolet and x-rays) and low-energy charged particles (electrons and ions). This process is applicable to imaging detectors of several types, including charge-coupled devices, hybrid devices, and complementary metal oxide/semiconductor detector arrays. Delta doping is so named because its density-vs.-depth characteristic is reminiscent of the Dirac delta function (impulse function): the dopant is highly concentrated in a very thin layer. Preferably, the dopant is concentrated in one or at most two atomic layers in a crystal plane and, therefore, delta doping is also known as atomic-plane doping. The use of doping to enable detection of high-energy photons and low-energy particles was reported in several prior NASA Tech Briefs articles. As described in more detail in those articles, the main benefit afforded by delta doping of a back-illuminated silicon detector is to eliminate a "dead" layer at the back surface of the silicon wherein high-energy photons and low-energy particles are absorbed without detection. An additional benefit is that the delta-doped layer can serve as a back-side electrical contact. Delta doping of p-type silicon detectors is well established. The development of the present process addresses concerns specific to the delta doping of high-purity silicon detectors, which are typically n-type. The present process involves relatively low temperatures, is fully compatible with other processes used to fabricate the detectors, and does not entail interruption of those processes. Indeed, this process can be the last stage in the fabrication of an imaging detector that has, in all other respects, already been fully processed, including metallized. This process includes molecular-beam epitaxy (MBE) for deposition of three layers, including metallization. The success of the process depends on accurate temperature control, surface treatment, growth of high-quality crystalline silicon, and precise control of thicknesses of layers. MBE affords the necessary nanometer- scale control of the placement of atoms for delta doping. More specifically, the process consists of MBE deposition of a thin silicon buffer layer, the n-type delta doping layer, and a thin silicon cap layer. The n dopant selected for initial experiments was antimony, but other n dopants as (phosphorus or arsenic) could be used. All n-type dopants in silicon tend to surface-segregate during growth, leading to a broadened dopant-concentration- versus-depth profile. In order to keep the profile as narrow as possible, the substrate temperature is held below 300 C during deposition of the silicon cap layer onto the antimony delta layer. The deposition of silicon includes a silicon- surface-preparation step, involving H-termination, that enables the growth of high-quality crystalline silicon at the relatively low temperature with close to full electrical activation of donors in the surface layer.

Silicon based substrate with calcium aluminosilicate/thermal barrier layer

NASA Technical Reports Server (NTRS)

Eaton, Jr., Harry Edwin (Inventor); Allen, William Patrick (Inventor); Miller, Robert Alden (Inventor); Jacobson, Nathan S. (Inventor); Smialek, James L. (Inventor); Opila, Elizabeth J. (Inventor); Lee, Kang N. (Inventor); Nagaraj, Bangalore A. (Inventor); Wang, Hongyu (Inventor); Meschter, Peter Joel (Inventor)

2001-01-01

A barrier layer for a silicon containing substrate which inhibits the formation of gaseous species of silicon when exposed to a high temperature aqueous environment comprises a calcium alumino silicate.

Silicon based substrate with environmental/thermal barrier layer

NASA Technical Reports Server (NTRS)

Eaton, Jr., Harry Edwin (Inventor); Allen, William Patrick (Inventor); Jacobson, Nathan S. (Inventor); Bansal, Narottam P. (Inventor); Opila, Elizabeth J. (Inventor); Smialek, James L. (Inventor); Lee, Kang N. (Inventor); Spitsberg, Irene T. (Inventor); Wang, Hongyu (Inventor); Meschter, Peter Joel (Inventor)

2002-01-01

A barrier layer for a silicon containing substrate which inhibits the formation of gaseous species of silicon when exposed to a high temperature aqueous environment comprises a barium-strontium alumino silicate.

Silicon based substrate with environmental/ thermal barrier layer

NASA Technical Reports Server (NTRS)

Eaton, Jr., Harry Edwin (Inventor); Allen, William Patrick (Inventor); Jacobson, Nathan S. (Inventor); Bansal, Nanottam P. (Inventor); Opila, Elizabeth J. (Inventor); Smialek, James L. (Inventor); Lee, Kang N. (Inventor); Spitsberg, Irene T. (Inventor); Wang, Hongyu (Inventor); Meschter, Peter Joel (Inventor)

2002-01-01

A barrier layer for a silicon containing substrate which inhibits the formation of gaseous species of silicon when exposed to a high temperature aqueous environment comprises a barium-strontium alumino silicate.

Impact of pre- and/or syn-tectonic salt layers in the hangingwall geometry of a kinked-planar extensional fault: insights from analogue modelling and comparison with the Parentis basin (bay of Biscay)

NASA Astrophysics Data System (ADS)

Ferrer, O.; Vendeville, B. C.; Roca, E.

2012-04-01

Using sandbox analogue modelling we determine the role played by a pre-kinematic or a syn-kinematic viscous salt layer during rollover folding of the hangingwall of a normal fault with a variable kinked-planar geometry, as well as understand the origin and the mechanisms that control the formation, kinematic evolution and geometry of salt structures developed in the hangingwall of this fault. The experiments we conducted consisted of nine models made of dry quartz-sand (35μm average grain size) simulating brittle rocks and a viscous silicone polymer (SMG 36 from Dow Corning) simulating salt in nature. The models were constructed between two end walls, one of which was fixed, whereas the other was moved by a motor-driven worm screw. The fixed wall was part of the rigid footwall of the model's master border fault. This fault was simulated using three different wood block configurations, which was overlain by a flexible (but not stretchable) sheet that was attached to the mobile endwall of the model. We applied three different infill hangingwall configurations to each fault geometry: (1) without silicone (sand only), (2) sand overlain by a pre-kinematic silicone layer deposited above the entire hanginwall, and (3) sand partly overlain by a syn-kinematic silicone layer that overlain only parts of the hangingwall. All models were subjected to a 14 cm of basement extension in a direction orthogonal to that of the border fault. Results show that the presence of a viscous layer (silicone) clearly controls the deformation pattern of the hangingwall. Thus, regardless of the silicone layer's geometry (either pre- or syn-extensional) or the geometry of the extensional fault, the silicone layer acts as a very efficient detachment level separating two different structural styles in each unit. In particular, the silicone layer acts as an extensional ductile shear zone inhibiting upward propagation of normal faults and/or shears bands from the sub-silicone layers. Whereas the basement is affected by antithetic normal faults that are more or less complex depending on the geometry of the master fault, the lateral flow of the silicone produces salt-cored anticlines, walls and diapirs in the overburden of the hangingwall. The mechanical behavior of the silicone layer as an extensional shear zone, combined with the lateral changes in pressure gradients due to overburden thickness changes, triggered the silicone migration from the half-graben depocenter towards the rollover shoulder. As a result, the accumulation of silicone produces gentle silicone-cored anticlines and local diapirs with minor extensional faults. Upwards fault propagation from the sub-silicone "basement" to the supra-silicone unit only occurs either when the supra- and sub-silicone materials are welded, or when the amount of slip along the master fault is large enough so that the tip of the silicone reaches the junction between the upper and lower panels of the master faults. Comparison between the results of these models with data from the western offshore Parentis Basin (Eastern Bay of Biscay) validates the structural interpretation of this region.

Silicon based substrate with calcium aluminosilicate environmental/thermal barrier layer

NASA Technical Reports Server (NTRS)

Eaton, Jr., Harry Edwin (Inventor); Allen, William Patrick (Inventor); Miller, Robert Alden (Inventor); Jacobson, Nathan S. (Inventor); Smialek, James L. (Inventor); Opila, Elizabeth J. (Inventor); Lee, Kang N. (Inventor); Nagaraj, Bangalore A. (Inventor); Wang, Hongyu (Inventor); Meschter, Peter Joel (Inventor)

2001-01-01

A barrier layer for a silicon containing substrate which inhibits the formation of gaseous species of silicon when exposed to a high temperature aqueous environment comprises a calcium alumino silicate.

Amorphous silicon carbide passivating layers for crystalline-silicon-based heterojunction solar cells

DOE Office of Scientific and Technical Information (OSTI.GOV)

Boccard, Mathieu; Holman, Zachary C.

Amorphous silicon enables the fabrication of very high-efficiency crystalline-silicon-based solar cells due to its combination of excellent passivation of the crystalline silicon surface and permeability to electrical charges. Yet, amongst other limitations, the passivation it provides degrades upon high-temperature processes, limiting possible post-deposition fabrication possibilities (e.g., forcing the use of low-temperature silver pastes). We investigate the potential use of intrinsic amorphous silicon carbide passivating layers to sidestep this issue. The passivation obtained using device-relevant stacks of intrinsic amorphous silicon carbide with various carbon contents and doped amorphous silicon are evaluated, and their stability upon annealing assessed, amorphous silicon carbide beingmore » shown to surpass amorphous silicon for temperatures above 300 °C. We demonstrate open-circuit voltage values over 700 mV for complete cells, and an improved temperature stability for the open-circuit voltage. Transport of electrons and holes across the hetero-interface is studied with complete cells having amorphous silicon carbide either on the hole-extracting side or on the electron-extracting side, and a better transport of holes than of electrons is shown. Also, due to slightly improved transparency, complete solar cells using an amorphous silicon carbide passivation layer on the hole-collecting side are demonstrated to show slightly better performances even prior to annealing than obtained with a standard amorphous silicon layer.« less

Amorphous silicon carbide passivating layers for crystalline-silicon-based heterojunction solar cells

DOE Office of Scientific and Technical Information (OSTI.GOV)

Boccard, Mathieu; Holman, Zachary C.

With this study, amorphous silicon enables the fabrication of very high-efficiency crystalline-silicon-based solar cells due to its combination of excellent passivation of the crystalline silicon surface and permeability to electrical charges. Yet, amongst other limitations, the passivation it provides degrades upon high-temperature processes, limiting possible post-deposition fabrication possibilities (e.g., forcing the use of low-temperature silver pastes). We investigate the potential use of intrinsic amorphous silicon carbide passivating layers to sidestep this issue. The passivation obtained using device-relevant stacks of intrinsic amorphous silicon carbide with various carbon contents and doped amorphous silicon are evaluated, and their stability upon annealing assessed, amorphousmore » silicon carbide being shown to surpass amorphous silicon for temperatures above 300°C. We demonstrate open-circuit voltage values over 700 mV for complete cells, and an improved temperature stability for the open-circuit voltage. Transport of electrons and holes across the hetero-interface is studied with complete cells having amorphous silicon carbide either on the hole-extracting side or on the electron-extracting side, and a better transport of holes than of electrons is shown. Also, due to slightly improved transparency, complete solar cells using an amorphous silicon carbide passivation layer on the hole-collecting side are demonstrated to show slightly better performances even prior to annealing than obtained with a standard amorphous silicon layer.« less

Amorphous silicon carbide passivating layers for crystalline-silicon-based heterojunction solar cells

DOE PAGES

Boccard, Mathieu; Holman, Zachary C.

2015-08-14

With this study, amorphous silicon enables the fabrication of very high-efficiency crystalline-silicon-based solar cells due to its combination of excellent passivation of the crystalline silicon surface and permeability to electrical charges. Yet, amongst other limitations, the passivation it provides degrades upon high-temperature processes, limiting possible post-deposition fabrication possibilities (e.g., forcing the use of low-temperature silver pastes). We investigate the potential use of intrinsic amorphous silicon carbide passivating layers to sidestep this issue. The passivation obtained using device-relevant stacks of intrinsic amorphous silicon carbide with various carbon contents and doped amorphous silicon are evaluated, and their stability upon annealing assessed, amorphousmore » silicon carbide being shown to surpass amorphous silicon for temperatures above 300°C. We demonstrate open-circuit voltage values over 700 mV for complete cells, and an improved temperature stability for the open-circuit voltage. Transport of electrons and holes across the hetero-interface is studied with complete cells having amorphous silicon carbide either on the hole-extracting side or on the electron-extracting side, and a better transport of holes than of electrons is shown. Also, due to slightly improved transparency, complete solar cells using an amorphous silicon carbide passivation layer on the hole-collecting side are demonstrated to show slightly better performances even prior to annealing than obtained with a standard amorphous silicon layer.« less

Broadband angle-independent antireflection coatings on nanostructured light trapping solar cells

NASA Astrophysics Data System (ADS)

Vázquez-Guardado, Abraham; Boroumand, Javaneh; Franklin, Daniel; Chanda, Debashis

2018-03-01

Backscattering from nanostructured surfaces greatly diminishes the efficacy of light trapping solar cells. While the analytical design of broadband, angle-independent antireflection coatings on nanostructured surfaces proved inefficient, numerical optimization proves a viable alternative. Here, we numerically design and experimentally verify the performance of single and bilayer antireflection coatings on a 2D hexagonal diffractive light trapping pattern on crystalline silicon substrates. Three well-known antireflection coatings, aluminum oxide, silicon nitride, and silicon oxide, which also double as high-quality surface passivation materials, are studied in the 400-1000 nm band. By varying thickness and conformity, the optimal parameters that minimize the broadband total reflectance (specular and scattering) from the nanostructured surface are obtained. The design results in a single-layer antireflection coating with normal-angle wavelength-integrated reflectance below 4% and a bilayer antireflection coating demonstrating reflection down to 1.5%. We show experimentally an angle-averaged reflectance of ˜5.2 % up to 60° incident angle from the optimized bilayer antireflection-coated nanostructured surface, paving the path toward practical implementation of the light trapping solar cells.

Silicon superlattices. 2: Si-Ge heterostructures and MOS systems

NASA Technical Reports Server (NTRS)

Moriarty, J. A.

1983-01-01

Five main areas were examined: (1) the valence-and conduction-band-edge electronic structure of the thin layer ( 11 A) silicon-superlattice systems; (2) extension of thin-layer calculations to layers of thickness 11 A, where most potential experimental interest lies; (3) the electronic structure of thicker-layer (11 to 110 A) silicon superlattices; (4) preliminary calculations of impurity-scattering-limited electron mobility in the thicker-layer superlattices; and (5) production of the fine metal lines that would be required to produce on MOS superlattice.

Hydrogen ion microlithography

DOEpatents

Tsuo, Y.S.; Deb, S.K.

1990-10-02

Disclosed is a hydrogen ion microlithography process for use in microelectronic fabrication and semiconductor device processing. The process comprises the steps of providing a single layer of either an amorphous silicon or hydrogenated amorphous silicon material. A pattern is recorded in a selected layer of amorphous silicon or hydrogenated amorphous silicon materials by preferentially implanting hydrogen ions therein so as to permit the selected layer to serve as a mask-resist wafer suitable for subsequent development and device fabrication. The layer is developed to provide a surface pattern therein adaptable for subsequent use in microelectronic fabrication and semiconductor device processing. 6 figs.

Passivation mechanism in silicon heterojunction solar cells with intrinsic hydrogenated amorphous silicon oxide layers

NASA Astrophysics Data System (ADS)

Deligiannis, Dimitrios; van Vliet, Jeroen; Vasudevan, Ravi; van Swaaij, René A. C. M. M.; Zeman, Miro

2017-02-01

In this work, we use intrinsic hydrogenated amorphous silicon oxide layers (a-SiOx:H) with varying oxygen content (cO) but similar hydrogen content to passivate the crystalline silicon wafers. Using our deposition conditions, we obtain an effective lifetime (τeff) above 5 ms for cO ≤ 6 at. % for passivation layers with a thickness of 36 ± 2 nm. We subsequently reduce the thickness of the layers using an accurate wet etching method to ˜7 nm and deposit p- and n-type doped layers fabricating a device structure. After the deposition of the doped layers, τeff appears to be predominantly determined by the doped layers themselves and is less dependent on the cO of the a-SiOx:H layers. The results suggest that τeff is determined by the field-effect rather than by chemical passivation.

Polarity control in WSe2 double-gate transistors

NASA Astrophysics Data System (ADS)

Resta, Giovanni V.; Sutar, Surajit; Balaji, Yashwanth; Lin, Dennis; Raghavan, Praveen; Radu, Iuliana; Catthoor, Francky; Thean, Aaron; Gaillardon, Pierre-Emmanuel; de Micheli, Giovanni

2016-07-01

As scaling of conventional silicon-based electronics is reaching its ultimate limit, considerable effort has been devoted to find new materials and new device concepts that could ultimately outperform standard silicon transistors. In this perspective two-dimensional transition metal dichalcogenides, such as MoS2 and WSe2, have recently attracted considerable interest thanks to their electrical properties. Here, we report the first experimental demonstration of a doping-free, polarity-controllable device fabricated on few-layer WSe2. We show how modulation of the Schottky barriers at drain and source by a separate gate, named program gate, can enable the selection of the carriers injected in the channel, and achieved controllable polarity behaviour with ON/OFF current ratios >106 for both electrons and holes conduction. Polarity-controlled WSe2 transistors enable the design of compact logic gates, leading to higher computational densities in 2D-flatronics.

Laser-induced amorphization of silicon during pulsed-laser irradiation of TiN/Ti/polycrystalline silicon/SiO2/silicon

NASA Astrophysics Data System (ADS)

Chong, Y. F.; Pey, K. L.; Wee, A. T. S.; Thompson, M. O.; Tung, C. H.; See, A.

2002-11-01

In this letter, we report on the complex solidification structures formed during laser irradiation of a titanium nitride/titanium/polycrystalline silicon/silicon dioxide/silicon film stack. Due to enhanced optical coupling, the titanium nitride/titanium capping layer increases the melt depth of polycrystalline silicon by more than a factor of 2. It is found that the titanium atoms diffuse through the entire polycrystalline silicon layer during irradiation. Contrary to the expected polycrystalline silicon growth, distinct regions of polycrystalline and amorphous silicon are formed instead. Possible mechanisms for the formation of these microstructures are proposed.

Compensated amorphous silicon solar cell

DOEpatents

Devaud, Genevieve

1983-01-01

An amorphous silicon solar cell including an electrically conductive substrate, a layer of glow discharge deposited hydrogenated amorphous silicon over said substrate and having regions of differing conductivity with at least one region of intrinsic hydrogenated amorphous silicon. The layer of hydrogenated amorphous silicon has opposed first and second major surfaces where the first major surface contacts the electrically conductive substrate and an electrode for electrically contacting the second major surface. The intrinsic hydrogenated amorphous silicon region is deposited in a glow discharge with an atmosphere which includes not less than about 0.02 atom percent mono-atomic boron. An improved N.I.P. solar cell is disclosed using a BF.sub.3 doped intrinsic layer.

A novel SOI LDMOS with substrate field plate and variable-k dielectric buried layer

NASA Astrophysics Data System (ADS)

Li, Qi; Wen, Yi; Zhang, Fabi; Li, Haiou; Xiao, Gongli; Chen, Yonghe; Fu, Tao

2018-09-01

A novel silicon-on-insulator (SOI) lateral double-diffused metal-oxide-semiconductor (LDMOS) structure has been proposed. The new structure features a substrate field plate (SFP) and a variable-k dielectric buried layer (VKBL). The SFP and VKBL improve the breakdown voltage by introducing new electric field peaks in the surface electric field distribution. Moreover, the SFP reduces the specific ON-resistance through an enhanced auxiliary depletion effect on the drift region. The simulation results indicate that compared to the conventional SOI LDMOS structure, the breakdown voltage is improved from 118 V to 221 V, the specific ON-resistance is decreased from 7.15 mΩ·cm2 to 3.81 mΩ·cm2, the peak value of surface temperature is declined by 38 K.

Proposed pushered single shell capsule design for the investigation of mid/high Z mix on the NIF

NASA Astrophysics Data System (ADS)

Sacks, Ryan; Tipton, Robert; Graziani, Frank

2016-05-01

The CD Mix campaign has given a detailed explination of the mix mechanics in the current ignition capsule designs by investigating the relationship between material mixing, shell-fuel interfaces, and the change in thermonuclear yield given a deuterated layer in the capsule. Alternative ignition scenarios include the use of double shell designs that incorporate high-Z material in the capsule. Simulations are conducted on a proposed capsule platform using the ARES code on a scaled capsule design using a partially reduced glass capsule design. This allows for the inclusion of deuterium on the inner surface of the pusher layer similar to the CD mix experiments. The presence of silicon dioxide allows for the investigation of the influence of higher Z material on the mixing characteristics.

Ablation enhancement of silicon by ultrashort double-pulse laser ablation

DOE Office of Scientific and Technical Information (OSTI.GOV)

Zhao, Xin; Shin, Yung C.

In this study, the ultrashort double-pulse ablation of silicon is investigated. An atomistic simulation model is developed to analyze the underlying physics. It is revealed that the double-pulse ablation could significantly increase the ablation rate of silicon, compared with the single pulse ablation with the same total pulse energy, which is totally different from the case of metals. In the long pulse delay range (over 1 ps), the enhancement is caused by the metallic transition of melted silicon with the corresponding absorption efficiency. At ultrashort pulse delay (below 1 ps), the enhancement is due to the electron excitation by the first pulse.more » The enhancement only occurs at low and moderate laser fluence. The ablation is suppressed at high fluence due to the strong plasma shielding effect.« less

Simulation and optimization of silicon-on-sapphire pressure sensor

NASA Astrophysics Data System (ADS)

Kulesh, N. A.; Kudyukov, E. V.; Balymov, K. G.; Beloyshov, A. A.

2017-09-01

In this paper, finite element analysis software COMSOL Multiphysics was used to simulate the performance of silicon-on-sapphire piezoresistive pressure sensor, aiming to elaborate a flexible model suitable for further optimization and customization of the currently produced pressure sensors. The base model was built around the cylindrical pressure cell made of titanium alloy having a circular diaphragm with monocrystalline sapphire layer attached. The monocrystalline piezoresistive elements were placed on top of the double-layer diaphragm and electrically connected to form the Wheatstone bridge. Verification of the model and parametric study included three main areas: geometrical parameters of the cell, position of the elements on the diaphragm, and operation at elevated temperature. Optimization of the cell geometry included variation of bossed titanium diaphragm parameters as well as rounding-off radiuses near the edges of the diaphragm. Influence of the temperature was considered separately for thermal expansion of the mechanical components and for the changes of electrical and piezoresistive properties of the piezoresistive elements. In conclusion, the simulation results were compared to the experimental data obtained for three different constructions of the commercial pressure sensors produced by SPA of Automatics named after Academician N.A. Semikhatov.

Temperature and color management of silicon solar cells for building integrated photovoltaic

NASA Astrophysics Data System (ADS)

Amara, Mohamed; Mandorlo, Fabien; Couderc, Romain; Gerenton, Félix; Lemiti, Mustapha

2018-01-01

Color management of integrated photovoltaics must meet two criteria of performance: provide maximum conversion efficiency and allow getting the chosen colors with an appropriate brightness, more particularly when using side by side solar cells of different colors. As the cooling conditions are not necessarily optimal, we need to take into account the influence of the heat transfer and temperature. In this article, we focus on the color space and brightness achieved by varying the antireflective properties of flat silicon solar cells. We demonstrate that taking into account the thermal effects allows freely choosing the color and adapting the brightness with a small impact on the conversion efficiency, except for dark blue solar cells. This behavior is especially true when heat exchange by convection is low. Our optical simulations show that the perceived color, for single layer ARC, is not varying with the position of the observer, whatever the chosen color. The use of a double layer ARC adds flexibility to tune the wanted color since the color space is greatly increased in the green and yellow directions. Last, choosing the accurate material allows both bright colors and high conversion efficiency at the same time.

Tandem junction amorphous silicon solar cells

DOEpatents

Hanak, Joseph J.

1981-01-01

An amorphous silicon solar cell has an active body with two or a series of layers of hydrogenated amorphous silicon arranged in a tandem stacked configuration with one optical path and electrically interconnected by a tunnel junction. The layers of hydrogenated amorphous silicon arranged in tandem configuration can have the same bandgap or differing bandgaps.

Method of fabricating germanium and gallium arsenide devices

NASA Technical Reports Server (NTRS)

Jhabvala, Murzban (Inventor)

1990-01-01

A method of semiconductor diode fabrication is disclosed which relies on the epitaxial growth of a precisely doped thickness layer of gallium arsenide or germanium on a semi-insulating or intrinsic substrate, respectively, of gallium arsenide or germanium by either molecular beam epitaxy (MBE) or by metal-organic chemical vapor deposition (MOCVD). The method involves: depositing a layer of doped or undoped silicon dioxide on a germanium or gallium arsenide wafer or substrate, selectively removing the silicon dioxide layer to define one or more surface regions for a device to be fabricated thereon, growing a matched epitaxial layer of doped germanium or gallium arsenide of an appropriate thickness using MBE or MOCVD techniques on both the silicon dioxide layer and the defined one or more regions; and etching the silicon dioxide and the epitaxial material on top of the silicon dioxide to leave a matched epitaxial layer of germanium or gallium arsenide on the germanium or gallium arsenide substrate, respectively, and upon which a field effect device can thereafter be formed.

Ceramic with preferential oxygen reactive layer

NASA Technical Reports Server (NTRS)

Wang, Hongyu (Inventor); Luthra, Krishan Lal (Inventor)

2001-01-01

An article comprises a silicon-containing substrate and an external environmental/thermal barrier coating. The external environmental/thermal barrier coating is permeable to diffusion of an environmental oxidant and the silicon-containing substrate is oxidizable by reaction with oxidant to form at least one gaseous product. The article comprises an intermediate layer/coating between the silicon-containing substrate and the environmental/thermal barrier coating that is oxidizable to a nongaseous product by reaction with the oxidant in preference to reaction of the silicon-containing substrate with the oxidant. A method of forming an article, comprises forming a silicon-based substrate that is oxidizable by reaction with oxidant to at least one gaseous product and applying an intermediate layer/coating onto the substrate, wherein the intermediate layer/coating is oxidizable to a nongaseous product by reaction with the oxidant in preference to reaction of the silicon-containing substrate with the oxidant.

Advanced detectors and signal processing for bubble memories

NASA Technical Reports Server (NTRS)

Kryder, M. H.; Rasky, P. H. L.; Greve, D. W.

1985-01-01

The feasibility of combining silicon and magnetic bubble technologies is demonstrated. Results of bubble film annealing indicate that a low temperature silicon on garnet technology is the most likely one to succeed commercially. Annealing ambients are also shown to have a major effect on the magnetic properties of bubble films. Functional MOSFETs were fabricated on bubble films coated with thick (approximately 1 micron) SiO2 layers. The two main problems with these silicon on garnet MOSFETs are low electron mobilities and large gate leakage currents. Results indicate that the laser recrystallized silicon and gate oxide (SiO2) layers are contaminated. The data suggest that part of the contaminating ions originate in the sputtered oxide spacer layer and part originates in the bubble film itself. A diffusion barrier, such as silicon nitride, placed between the bubble film and the silicon layer should eliminate the contamination induced problem.

Nitrogen doped silicon-carbon multilayer protective coatings on carbon obtained by thermionic vacuum arc (TVA) method

NASA Astrophysics Data System (ADS)

Ciupinǎ, Victor; Vasile, Eugeniu; Porosnicu, Corneliu; Vladoiu, Rodica; Mandes, Aurelia; Dinca, Virginia; Nicolescu, Virginia; Manu, Radu; Dinca, Paul; Zaharia, Agripina

2018-02-01

To obtain protective nitrogen doped Si-C multilayer coatings on carbon, used to improve the oxidation resistance of carbon, was used TVA method. The initial carbon layer has been deposed on a silicon substrate in the absence of nitrogen, and then a 3nm Si thin film to cover carbon layer was deposed. Further, seven Si and C layers were alternatively deposed in the presence of nitrogen ions. In order to form silicon carbide at the interface between silicon and carbon layers, all carbon, silicon and nitrogen ions energy has increased up to 150eV. The characterization of microstructure and electrical properties of as-prepared N-Si-C multilayer structures were done using Transmission Electron Microscopy (TEM, STEM) techniques, Thermal Desorption Spectroscopy (TDS) and electrical measurements. The retention of oxygen in the protective layer of N-Si-C is due to the following phenomena: (a) The reaction between oxygen and silicon carbide resulting in silicon oxide and carbon dioxide; (b) The reaction involving oxygen, nitrogen and silicon resulting silicon oxinitride with a variable composition; (c) Nitrogen acts as a trapping barrier for oxygen. To perform electrical measurements, ohmic contacts were attached on the N-Si-C samples. Electrical conductivity was measured in constant current mode. To explain the temperature behavior of electrical conductivity we assumed a thermally activated electric transport mechanism.

Ab initio density functional theory investigation of structural and electronic properties of double-walled silicon carbide nanotubes

NASA Astrophysics Data System (ADS)

Moradian, Rostam; Behzad, Somayeh; Chegel, Raad

2009-12-01

By using ab initio density functional theory, the structural and electronic properties of (n,n)@(11,11) double-walled silicon carbide nanotubes (SiCNTs) are investigated. Our calculations reveal the existence of an energetically favorable double-walled nanotube whose interwall distance is about 4.3 Å. Interwall spacing and curvature difference are found to be essential for the electronic states around the Fermi level.

Structurally controlled deposition of silicon onto nanowires

DOE Office of Scientific and Technical Information (OSTI.GOV)

Wang, Weijie; Liu, Zuqin; Han, Song

Provided herein are nanostructures for lithium ion battery electrodes and methods of fabrication. In some embodiments, a nanostructure template coated with a silicon coating is provided. The silicon coating may include a non-conformal, more porous layer and a conformal, denser layer on the non-conformal, more porous layer. In some embodiments, two different deposition processes, e.g., a PECVD layer to deposit the non-conformal layer and a thermal CVD process to deposit the conformal layer, are used. Anodes including the nanostructures have longer cycle lifetimes than anodes made using either a PECVD or thermal CVD method alone.

Spectroellipsometric detection of silicon substrate damage caused by radiofrequency sputtering of niobium oxide

NASA Astrophysics Data System (ADS)

Lohner, Tivadar; Serényi, Miklós; Szilágyi, Edit; Zolnai, Zsolt; Czigány, Zsolt; Khánh, Nguyen Quoc; Petrik, Péter; Fried, Miklós

2017-11-01

Substrate surface damage induced by deposition of metal atoms by radiofrequency (rf) sputtering or ion beam sputtering onto single-crystalline silicon (c-Si) surface has been characterized earlier by electrical measurements. The question arises whether it is possible to characterize surface damage using spectroscopic ellipsometry (SE). In our experiments niobium oxide layers were deposited by rf sputtering on c-Si substrates in gas mixture of oxygen and argon. Multiple angle of incidence spectroscopic ellipsometry measurements were performed, a four-layer optical model (surface roughness layer, niobium oxide layer, native silicon oxide layer and ion implantation-amorphized silicon [i-a-Si] layer on a c-Si substrate) was created in order to evaluate the spectra. The evaluations yielded thicknesses of several nm for the i-a-Si layer. Better agreement could be achieved between the measured and the generated spectra by inserting a mixed layer (with components of c-Si and i-a-Si applying the effective medium approximation) between the silicon oxide layer and the c-Si substrate. High depth resolution Rutherford backscattering (RBS) measurements were performed to investigate the interface disorder between the deposited niobium oxide layer and the c-Si substrate. Atomic resolution cross-sectional transmission electron microscopy investigation was applied to visualize the details of the damaged subsurface region of the substrate.

Porous silicon carbide (SiC) semiconductor device

NASA Technical Reports Server (NTRS)

Shor, Joseph S. (Inventor); Kurtz, Anthony D. (Inventor)

1994-01-01

A semiconductor device employs at least one layer of semiconducting porous silicon carbide (SiC). The porous SiC layer has a monocrystalline structure wherein the pore sizes, shapes, and spacing are determined by the processing conditions. In one embodiment, the semiconductor device is a p-n junction diode in which a layer of n-type SiC is positioned on a p-type layer of SiC, with the p-type layer positioned on a layer of silicon dioxide. Because of the UV luminescent properties of the semiconducting porous SiC layer, it may also be utilized for other devices such as LEDs and optoelectronic devices.

In situ spectroscopic ellipsometry study of low-temperature epitaxial silicon growth

NASA Astrophysics Data System (ADS)

Halagačka, L.; Foldyna, M.; Leal, R.; Roca i Cabarrocas, P.

2018-07-01

Low-temperature growth of doped epitaxial silicon layers is a promising way to reduce the cost of p-n junction formation in c-Si solar cells. In this work, we study process of highly doped epitaxial silicon layer growth using in situ spectroscopic ellipsometry. The film was deposited by plasma-enhanced chemical vapor deposition (PECVD) on a crystalline silicon substrate at a low substrate temperature of 200 °C. In the deposition process, SiF4 was used as a precursor, B2H6 as doping gas, and a hydrogen/argon mixture as carrier gas. A spectroscopic ellipsometer with a wide spectral range was used for in situ spectroscopic measurements. Since the temperature during process is 200 °C, the optical functions of silicon differ from these at room temperature and have to be adjusted. Thickness of the epitaxial silicon layer was fitted on in situ ellipsometric data. As a result we were able to determine the dynamics of epitaxial layer growth, namely initial layer formation time and epitaxial growth rate. This study opens new perspectives in understanding and monitoring the epitaxial silicon deposition processes as the model fitting can be applied directly during the growth.

Method for forming a glove attachment

NASA Technical Reports Server (NTRS)

Dawn, Frederic S. (Inventor); Guy, Walter W. (Inventor); Kosmo, Joseph (Inventor); Drennan, Arthur P. (Inventor); Tschirch, Richard P. (Inventor)

1995-01-01

An attachment principally for the palm of an astronaut glove to enhance the gripping area of the palm without detracting from the flexibility and utility of the glove is presented. The attachment is a composite construction formed from a layer of silicone rubber having an outer surface with a friction configuration and another layer of silicone rubber in which a Nomex Aramid mesh fabric is embedded prior to curing. The method of construction involves the use of a mold with a friction configuration surface. A first layer of silicone rubber or sealant is disposed in the mold and allowed to set for an hour. A second layer of silicone rubber or sealant is layered over the first layer and leveled. A Nomex Aramid mesh fabric is embedded into the second layer and the composite is permitted to cure. When cured, a configured area of the composite construction is glued or stitched to the palm area of the glove.

Oxidation resistant high temperature thermal cycling resistant coatings on silicon-based substrates and process for the production thereof

DOEpatents

Sarin, V.K.

1990-08-21

An oxidation resistant, high temperature thermal cycling resistant coated ceramic article for ceramic heat engine applications is disclosed. The substrate is a silicon-based material, i.e. a silicon nitride- or silicon carbide-based monolithic or composite material. The coating is a graded coating of at least two layers: an intermediate AlN or Al[sub x]N[sub y]O[sub z] layer and an aluminum oxide or zirconium oxide outer layer. The composition of the coating changes gradually from that of the substrate to that of the AlN or Al[sub x]N[sub y]O[sub z] layer and further to the composition of the aluminum oxide or zirconium oxide outer layer. Other layers may be deposited over the aluminum oxide layer. A CVD process for depositing the graded coating on the substrate is also disclosed.

Oxidation resistant high temperature thermal cycling resistant coatings on silicon-based substrates and process for the production thereof

DOEpatents

Sarin, Vinod K.

1990-01-01

An oxidation resistant, high temperature thermal cycling resistant coated ceramic article for ceramic heat engine applications. The substrate is a silicon-based material, i.e. a silicon nitride- or silicon carbide-based monolithic or composite material. The coating is a graded coating of at least two layers: an intermediate AlN or Al.sub.x N.sub.y O.sub.z layer and an aluminum oxide or zirconium oxide outer layer. The composition of the coating changes gradually from that of the substrate to that of the AlN or Al.sub.x N.sub.y O.sub.z layer and further to the composition of the aluminum oxide or zirconium oxide outer layer. Other layers may be deposited over the aluminum oxide layer. A CVD process for depositing the graded coating on the substrate is also disclosed.

Method for making circular tubular channels with two silicon wafers

DOEpatents

Yu, Conrad M.; Hui, Wing C.

1996-01-01

A two-wafer microcapillary structure is fabricated by depositing boron nitride (BN) or silicon nitride (Si.sub.3 N.sub.4) on two separate silicon wafers (e.g., crystal-plane silicon with [100] or [110] crystal orientation). Photolithography is used with a photoresist to create exposed areas in the deposition for plasma etching. A slit entry through to the silicon is created along the path desired for the ultimate microcapillary. Acetone is used to remove the photoresist. An isotropic etch, e.g., such as HF/HNO.sub.3 /CH.sub.3 COOH, then erodes away the silicon through the trench opening in the deposition layer. A channel with a half-circular cross section is then formed in the silicon along the line of the trench in the deposition layer. Wet etching is then used to remove the deposition layer. The two silicon wafers are aligned and then bonded together face-to-face to complete the microcapillary.

Micro-abrasion package capture cell experiment on the trailing edge of LDEF: Impactor chemistry and whipple bumper shield efficiencies

NASA Technical Reports Server (NTRS)

Fitzgerald, Howard J.; Yano, Hajime

1995-01-01

Four of the eight available double layer microparticle capture cells, flown as the experiment A0023 on the trailing (West) face of LDEF, have been extensively studied. An investigation of the chemistry of impactors has been made using SEM/EDX techniques and the effectiveness of the capture cells as bumper shields has also been examined. Studies of these capture cells gave positive EDX results, with 53 percent of impact sites indicating the presence of some chemical residues, the predominant residue identified as being silicon in varying quantities.

Superlattice doped layers for amorphous silicon photovoltaic cells

DOEpatents

Arya, Rajeewa R.

1988-01-12

Superlattice doped layers for amorphous silicon photovoltaic cells comprise a plurality of first and second lattices of amorphous silicon alternatingly formed on one another. Each of the first lattices has a first optical bandgap and each of the second lattices has a second optical bandgap different from the first optical bandgap. A method of fabricating the superlattice doped layers also is disclosed.

Asymmetric band offsets in silicon heterojunction solar cells: Impact on device performance

DOE Office of Scientific and Technical Information (OSTI.GOV)

Seif, Johannes Peter; Menda, Deneb; Descoeudres, Antoine

Here, amorphous/crystalline silicon interfaces feature considerably larger valence than conduction band offsets. In this article, we analyze the impact of such band offset asymmetry on the performance of silicon heterojunction solar cells. To this end, we use silicon suboxides as passivation layers -- inserted between substrate and (front or rear) contacts -- since such layers enable intentionally exacerbated band-offset asymmetry. Investigating all topologically possible passivation layer permutations and focussing on light and dark current-voltage characteristics, we confirm that to avoid fill factor losses, wider-bandgap silicon oxide films (of at least several nanometer thin) should be avoided in hole-collecting contacts. Asmore » a consequence, device implementation of such films as window layers -- without degraded carrier collection -- demands electron collection at the front and hole collection at the rear. Furthermore, at elevated operating temperatures, once possible carrier transport barriers are overcome by thermionic (field) emission, the device performance is mainly dictated by the passivation of its surfaces. In this context, compared to the standard amorphous silicon layers, the wide-bandgap oxide layers applied here passivate remarkably better at these temperatures, which may represent an additional benefit under practical operation conditions.« less

Asymmetric band offsets in silicon heterojunction solar cells: Impact on device performance

DOE PAGES

Seif, Johannes Peter; Menda, Deneb; Descoeudres, Antoine; ...

2016-08-01

Here, amorphous/crystalline silicon interfaces feature considerably larger valence than conduction band offsets. In this article, we analyze the impact of such band offset asymmetry on the performance of silicon heterojunction solar cells. To this end, we use silicon suboxides as passivation layers -- inserted between substrate and (front or rear) contacts -- since such layers enable intentionally exacerbated band-offset asymmetry. Investigating all topologically possible passivation layer permutations and focussing on light and dark current-voltage characteristics, we confirm that to avoid fill factor losses, wider-bandgap silicon oxide films (of at least several nanometer thin) should be avoided in hole-collecting contacts. Asmore » a consequence, device implementation of such films as window layers -- without degraded carrier collection -- demands electron collection at the front and hole collection at the rear. Furthermore, at elevated operating temperatures, once possible carrier transport barriers are overcome by thermionic (field) emission, the device performance is mainly dictated by the passivation of its surfaces. In this context, compared to the standard amorphous silicon layers, the wide-bandgap oxide layers applied here passivate remarkably better at these temperatures, which may represent an additional benefit under practical operation conditions.« less

On the photon annealing of silicon-implanted gallium-nitride layers

DOE Office of Scientific and Technical Information (OSTI.GOV)

Seleznev, B. I., E-mail: Boris.Seleznev@novsu.ru; Moskalev, G. Ya.; Fedorov, D. G.

2016-06-15

The conditions for the formation of ion-doped layers in gallium nitride upon the incorporation of silicon ions followed by photon annealing in the presence of silicon dioxide and nitride coatings are analyzed. The conditions of the formation of ion-doped layers with a high degree of impurity activation are established. The temperature dependences of the surface concentration and mobility of charge carriers in ion-doped GaN layers annealed at different temperatures are studied.

Fabrication of heterojunction solar cells by improved tin oxide deposition on insulating layer

DOEpatents

Feng, Tom; Ghosh, Amal K.

1980-01-01

Highly efficient tin oxide-silicon heterojunction solar cells are prepared by heating a silicon substrate, having an insulating layer thereon, to provide a substrate temperature in the range of about 300.degree. C. to about 400.degree. C. and thereafter spraying the so-heated substrate with a solution of tin tetrachloride in a organic ester boiling below about 250.degree. C. Preferably the insulating layer is naturally grown silicon oxide layer.

The Si/CdTe semiconductor camera of the ASTRO-H Hard X-ray Imager (HXI)

NASA Astrophysics Data System (ADS)

Sato, Goro; Hagino, Kouichi; Watanabe, Shin; Genba, Kei; Harayama, Atsushi; Kanematsu, Hironori; Kataoka, Jun; Katsuragawa, Miho; Kawaharada, Madoka; Kobayashi, Shogo; Kokubun, Motohide; Kuroda, Yoshikatsu; Makishima, Kazuo; Masukawa, Kazunori; Mimura, Taketo; Miyake, Katsuma; Murakami, Hiroaki; Nakano, Toshio; Nakazawa, Kazuhiro; Noda, Hirofumi; Odaka, Hirokazu; Onishi, Mitsunobu; Saito, Shinya; Sato, Rie; Sato, Tamotsu; Tajima, Hiroyasu; Takahashi, Hiromitsu; Takahashi, Tadayuki; Takeda, Shin`ichiro; Yuasa, Takayuki

2016-09-01

The Hard X-ray Imager (HXI) is one of the instruments onboard the ASTRO-H mission [1-4] to be launched in early 2016. The HXI is the focal plane detector of the hard X-ray reflecting telescope that covers an energy range from 5 to 80 keV. It will execute observations of astronomical objects with a sensitivity for point sources as faint as 1/100,000 of the Crab nebula at > 10 keV. The HXI camera - the imaging part of the HXI - is realized by a hybrid semiconductor detector system that consists of silicon (Si) and cadmium telluride (CdTe) semiconductor detectors. Here, we present the final design of the HXI camera and report on the development of the flight model. The camera is composed of four layers of Double-sided Silicon Strip Detectors (DSSDs) and one layer of CdTe Double-sided Strip Detector (CdTe-DSD), each with an imaging area of 32 mm×32 mm. The strip pitch of the Si and CdTe sensors is 250 μm, and the signals from all 1280 strips are processed by 40 Application Specified Integrated Circuits (ASICs) developed for the HXI. The five layers of sensors are vertically stacked with a 4 mm spacing to increase the detection efficiency. The thickness of the sensors is 0.5 mm for the Si, and 0.75 mm for the CdTe. In this configuration, soft X-ray photons will be absorbed in the Si part, while hard X-ray photons will go through the Si part and will be detected in the CdTe part. The design of the sensor trays, peripheral circuits, power connections, and readout schemes are also described. The flight models of the HXI camera have been manufactured, tested and installed in the HXI instrument and then on the satellite.

Processes for producing low cost, high efficiency silicon solar cells

DOEpatents

Rohatgi, Ajeet; Doshi, Parag; Tate, John Keith; Mejia, Jose; Chen, Zhizhang

1998-06-16

Processes which utilize rapid thermal processing (RTP) are provided for inexpensively producing high efficiency silicon solar cells. The RTP processes preserve minority carrier bulk lifetime .tau. and permit selective adjustment of the depth of the diffused regions, including emitter and back surface field (bsf), within the silicon substrate. In a first RTP process, an RTP step is utilized to simultaneously diffuse phosphorus and aluminum into the front and back surfaces, respectively, of a silicon substrate. Moreover, an in situ controlled cooling procedure preserves the carrier bulk lifetime .tau. and permits selective adjustment of the depth of the diffused regions. In a second RTP process, both simultaneous diffusion of the phosphorus and aluminum as well as annealing of the front and back contacts are accomplished during the RTP step. In a third RTP process, the RTP step accomplishes simultaneous diffusion of the phosphorus and aluminum, annealing of the contacts, and annealing of a double-layer antireflection/passivation coating SiN/SiO.sub.x. In a fourth RTP process, the process of applying front and back contacts is broken up into two separate respective steps, which enhances the efficiency of the cells, at a slight time expense. In a fifth RTP process, a second RTP step is utilized to fire and adhere the screen printed or evaporated contacts to the structure.

Surface preparation for high purity alumina ceramics enabling direct brazing in hydrogen atmospheres

DOEpatents

Cadden, Charles H.; Yang, Nancy Yuan Chi; Hosking, Floyd M.

2001-01-01

The present invention relates to a method for preparing the surface of a high purity alumina ceramic or sapphire specimen that enables direct brazing in a hydrogen atmosphere using an active braze alloy. The present invention also relates to a method for directly brazing a high purity alumina ceramic or sapphire specimen to a ceramic or metal member using this method of surface preparation, and to articles produced by this brazing method. The presence of silicon, in the form of a SiO.sub.2 -containing surface layer, can more than double the tensile bond strength in alumina ceramic joints brazed in a hydrogen atmosphere using an active Au-16Ni-0.75 Mo-1.75V filler metal. A thin silicon coating applied by PVD processing can, after air firing, produce a semi-continuous coverage of the alumina surface with a SiO.sub.2 film. Room temperature tensile strength was found to be proportional to the fraction of air fired surface covered by silicon-containing films. Similarly, the ratio of substrate fracture versus interface separation was also related to the amount of surface silicon present prior to brazing. This process can replace the need to perform a "moly-manganese" metallization step.

Characterization of Ag-porous silicon nanostructured layer formed by an electrochemical etching of p-type silicon surface for bio-application

NASA Astrophysics Data System (ADS)

Naddaf, M.; Al-Mariri, A.; Haj-Mhmoud, N.

2017-06-01

Nanostructured layers composed of silver-porous silicon (Ag-PS) have been formed by an electrochemical etching of p-type (1 1 1) silicon substrate in a AgNO3:HF:C2H5OH solution at different etching times (10 min-30 min). Scanning electron microscopy (SEM) and energy-dispersive x-ray spectroscopy (EDS) results reveal that the produced layers consist of Ag dendrites and a silicon-rich porous structure. The nanostructuring nature of the layer has been confirmed by spatial micro-Raman scattering and x-ray diffraction techniques. The Ag dendrites exhibit a surface-enhanced Raman scattering (SERS) spectrum, while the porous structure shows a typical PS Raman spectrum. Upon increasing the etching time, the average size of silicon nanocrystallite in the PS network decreases, while the average size of Ag nanocrystals is slightly affected. In addition, the immobilization of prokaryote Salmonella typhimurium DNA via physical adsorption onto the Ag-PS layer has been performed to demonstrate its efficiency as a platform for detection of biological molecules using SERS.

Thermoelectric properties of nanostructured porous silicon

NASA Astrophysics Data System (ADS)

Martín-Palma, R. J.; Cabrera, H.; Martín-Adrados, B.; Korte, D.; Pérez-Cappe, E.; Mosqueda, Y.; Frutis, M. A.; Danguillecourt, E.

2018-01-01

In this work we report on the thermoelectric properties of nanostructured porous silicon (nanoPS) layers grown onto silicon substrates. More specifically, nanoPS layers of different porosity, nanocrystal size, and thickness were fabricated and their electrical conductivities, Seebeck coefficients, and thermal conductivities were subsequently measured. It was found that these parameters show a strong dependence on the characteristics of the nanoPS layers and thus can be controlled.

Reflectance modeling of electrochemically P-type porosified silicon by Drude-Lorentz model

NASA Astrophysics Data System (ADS)

Kadi, M.; Media, E. M.; Gueddaoui, H.; Outemzabet, R.

2014-09-01

Porous silicon remains a promising material for optoelectronic application; in this field monitoring of the refractive index profile of the porous layer is required. We present in this work a procedure based on Drude-Lorentz model for calculating the optical parameters such as the high- and low-frequency dielectric constants, the plasma frequency by fitting the reflectance spectra. The experimental data of different porous silicon layer created above the bulk silicon material by electrochemical etching are extracted from reflectance measurements. The reflectance spectra are recorded in the spectral range 350-2500 nm. First, our computational procedure has been validated by its application on mono-crystalline silicon for the determination of its optical parameters. A good agreement between our results and those found in other works has been achieved in the visible-NIR range. In the second step, the model was applied to porous silicon (PS) layers. Useful optical parameters like the refractive index and the extinction coefficient, respectively, n (λ) and κ(λ), the band gap Eg, of different fabricated porous silicon layer are determined from simulated reflectance spectra. The correlation between the optical properties and the conditions of the electrochemical treatment was observed and analyzed. The main conclusion is that the reflected light from the porous silicon surface, although non-homogeneous and thus possessing the light scattering, is essentially smaller than the reflected light from the bulk crystalline silicon. These results show that the porous surface layer can act as an antireflection coating for silicon and could be used, in particular, in solar cells.

Growth of a delta-doped silicon layer by molecular beam epitaxy on a charge-coupled device for reflection-limited ultraviolet quantum efficiency

NASA Technical Reports Server (NTRS)

Hoenk, Michael E.; Grunthaner, Paula J.; Grunthaner, Frank J.; Terhune, R. W.; Fattahi, Masoud; Tseng, Hsin-Fu

1992-01-01

Low-temperature silicon molecular beam epitaxy is used to grow a delta-doped silicon layer on a fully processed charge-coupled device (CCD). The measured quantum efficiency of the delta-doped backside-thinned CCD is in agreement with the reflection limit for light incident on the back surface in the spectral range of 260-600 nm. The 2.5 nm silicon layer, grown at 450 C, contained a boron delta-layer with surface density of about 2 x 10 exp 14/sq cm. Passivation of the surface was done by steam oxidation of a nominally undoped 1.5 nm Si cap layer. The UV quantum efficiency was found to be uniform and stable with respect to thermal cycling and illumination conditions.

Whiskerless Schottky diode

NASA Technical Reports Server (NTRS)

Bishop, William L. (Inventor); Mcleod, Kathleen A. (Inventor); Mattauch, Robert J. (Inventor)

1991-01-01

A Schottky diode for millimeter and submillimeter wave applications is comprised of a multi-layered structure including active layers of gallium arsenide on a semi-insulating gallium arsenide substrate with first and second insulating layers of silicon dioxide on the active layers of gallium arsenide. An ohmic contact pad lays on the silicon dioxide layers. An anode is formed in a window which is in and through the silicon dioxide layers. An elongated contact finger extends from the pad to the anode and a trench, preferably a transverse channel or trench of predetermined width, is formed in the active layers of the diode structure under the contact finger. The channel extends through the active layers to or substantially to the interface of the semi-insulating gallium arsenide substrate and the adjacent gallium arsenide layer which constitutes a buffer layer. Such a structure minimizes the effect of the major source of shunt capacitance by interrupting the current path between the conductive layers beneath the anode contact pad and the ohmic contact. Other embodiments of the diode may substitute various insulating or semi-insulating materials for the silicon dioxide, various semi-conductors for the active layers of gallium arsenide, and other materials for the substrate, which may be insulating or semi-insulating.

Method for cleaning a solar cell surface opening made with a solar etch paste

DOEpatents

Rohatgi, Ajeet; Meemongkolkiat, Vichai

2010-06-22

A thin silicon solar cell having a back dielectric passivation and rear contact with local back surface field is described. Specifically, the solar cell may be fabricated from a crystalline silicon wafer having a thickness from 50 to 500 micrometers. A barrier layer and a dielectric layer are applied at least to the back surface of the silicon wafer to protect the silicon wafer from deformation when the rear contact is formed. At least one opening is made to the dielectric layer. An aluminum contact that provides a back surface field is formed in the opening and on the dielectric layer. The aluminum contact may be applied by screen printing an aluminum paste having from one to 12 atomic percent silicon and then applying a heat treatment at 750 degrees Celsius.

Method for formation of high quality back contact with screen-printed local back surface field

DOEpatents

Rohatgi, Ajeet; Meemongkolkiat, Vichai

2010-11-30

A thin silicon solar cell having a back dielectric passivation and rear contact with local back surface field is described. Specifically, the solar cell may be fabricated from a crystalline silicon wafer having a thickness from 50 to 500 micrometers. A barrier layer and a dielectric layer are applied at least to the back surface of the silicon wafer to protect the silicon wafer from deformation when the rear contact is formed. At least one opening is made to the dielectric layer. An aluminum contact that provides a back surface field is formed in the opening and on the dielectric layer. The aluminum contact may be applied by screen printing an aluminum paste having from one to 12 atomic percent silicon and then applying a heat treatment at 750 degrees Celsius.

[Influence of different designs and porcelain/glaze firing on the marginal and internal fit of implant-supported zirconia crowns].

PubMed

Cuiling, Liu; Xu, Gao; Yuping, Qi; Liyuan, Yang

2016-02-01

This study investigated the influence of different designs and porcelain/glaze firing on the marginal and internal fit of three kinds of computer aided design/computer aided manufacturing (CAD/CAM) zirconia ceramic implant-supported crowns. Three groups of zirconia ceramic implant-supported crowns with different designs were produced from copings by using a Cercon CAD/CAM system (n = 8). The first two groups comprised double-layer crowns (zirconia coping + veneer) with regular (Group A) and full circumferential zirconia-collar marginal designs (Group B). The third group was composed of anatomic single-layer zirconia crowns without cores (Group C). Initially, the marginal and internal gaps of the copings and crowns were individually replicated by light-body silicon and then measured by micro-computed tomography scanning before and after porcelain/glaze firing. Five measurements were employed: vertical marginal gap (MG); horizontal marginal discrepancy (HMD); chamfer area (CA); axial wall (AW); and axial-occlusal transition area (AOT). Statistical analyses were performed by SPSS 17.0. HMD measurements in Group A were statistically higher than those in Groups B and C (P < 0.05), regardless of whether the values were obtained before or after porcelain/glaze firing. By contrast, the HIMD measurements in Groups B and C showed no significant difference (P > 0.05). Moreover, no differences were noted in MG, CA, AW, and AOT among the three groups (P > 0.05). All the measurements in the three groups showed no significant change after porcelain/glaze firing (P > 0.05), except for MG in Group A, which significantly decreased (P < 0.05). The marginal fits of the double-layer crowns with full circumferential zirconia-collar and the anatomic single-layer zirconia crowns were superior to that of the double-layer crowns with regular margins. The MG of the crowns with regular margins was obviously influenced by porcelain firing.

Quantum ballistic analysis of transition metal dichalcogenides based double gate junctionless field effect transistor and its application in nano-biosensor

NASA Astrophysics Data System (ADS)

Shadman, Abir; Rahman, Ehsanur; Khosru, Quazi D. M.

2017-11-01

To reduce the thermal budget and the short channel effects in state of the art CMOS technology, Junctionless field effect transistor (JLFET) has been proposed in the literature. Numerous experimental, modeling, and simulation based works have been done on this new FET with bulk materials for various geometries until now. On the other hand, the two-dimensional layered material is considered as an alternative to current Si technology because of its ultra-thin body and high mobility. Very recently few simulation based works have been done on monolayer molybdenum disulfide based JLFET mainly to show the advantage of JLFET over conventional FET. However, no comprehensive simulation-based work has been done for double gate JLFET keeping in mind the prominent transition metal dichalcogenides (TMDC) to the authors' best knowledge. In this work, we have studied quantum ballistic drain current-gate voltage characteristics of such FETs within non-equilibrium Green's function (NEGF) framework. Our simulation results reveal that all these TMDC materials are viable options for implementing state of the art Junctionless MOSFET with emphasis on their performance at short gate lengths. Besides evaluating the prospect of TMDC materials in the digital logic application, the performance of Junctionless Double Gate trilayer TMDC heterostructure FET for the label-free electrical detection of biomolecules in dry environment has been investigated for the first time to the authors' best knowledge. The impact of charge neutral biomolecules on the electrical characteristics of the biosensor has been analyzed under dry environment situation. Our study shows that these materials could provide high sensitivity in the sub-threshold region as a channel material in nano-biosensor, a trend demonstrated by silicon on insulator FET sensor in the literature. Thus, going by the trend of replacing silicon with these novel materials in device level, TMDC heterostructure could be a viable alternative to silicon for potentiometric biosensing.

Transmissive metallic contact for amorphous silicon solar cells

DOEpatents

Madan, A.

1984-11-29

A transmissive metallic contact for amorphous silicon semiconductors includes a thin layer of metal, such as aluminum or other low work function metal, coated on the amorphous silicon with an antireflective layer coated on the metal. A transparent substrate, such as glass, is positioned on the light reflective layer. The metallic layer is preferably thin enough to transmit at least 50% of light incident thereon, yet thick enough to conduct electricity. The antireflection layer is preferably a transparent material that has a refractive index in the range of 1.8 to 2.2 and is approximately 550A to 600A thick.

Porous Silicon as Antireflecting Layer

NASA Astrophysics Data System (ADS)

Kosoglu, Gulsen; Yumak, Mehmet; Okmen, Selim; Ozatay, Ozhan; Skarlatos, Yani; Garcia, Carlos

2013-03-01

The main aim in photovoltaic industry is to produce efficient and energy competitive solar cell modules at low cost. Efficient AntiReflection Coatings (ARC) improve light collection and thereby increase the current output of solar cells. Broadband ARCs are desirable for efficient application over the entire solar spectrum and porous silicon layers as antireflective coating layers provide successful light collection. In the study the most critical physical parameters of porous silicon are examined, homogeneous and uniform porous layers are produced. The photoluminescence spectrum and optical parameters of porous layers have been investigated, and we are now in the process of improving the efficiency of the device by modulating the structure of the porous silicon layers and studying its photovoltaic characteristics. We would like to thank to Mr. Aziz U. Caliskan and his group for their valuable support from TUBITAK YITAL. This Project is supported by Bogazici University Research Funding: 5782, TUBITAK Grant : 209T099, and Bogazici University Infrared Funding: 6121.

Enhanced optical output power of InGaN/GaN light-emitting diodes grown on a silicon (111) substrate with a nanoporous GaN layer.

PubMed

Lee, Kwang Jae; Chun, Jaeyi; Kim, Sang-Jo; Oh, Semi; Ha, Chang-Soo; Park, Jung-Won; Lee, Seung-Jae; Song, Jae-Chul; Baek, Jong Hyeob; Park, Seong-Ju

2016-03-07

We report the growth of InGaN/GaN multiple quantum wells blue light-emitting diodes (LEDs) on a silicon (111) substrate with an embedded nanoporous (NP) GaN layer. The NP GaN layer is fabricated by electrochemical etching of n-type GaN on the silicon substrate. The crystalline quality of crack-free GaN grown on the NP GaN layer is remarkably improved and the residual tensile stress is also decreased. The optical output power is increased by 120% at an injection current of 20 mA compared with that of conventional LEDs without a NP GaN layer. The large enhancement of optical output power is attributed to the reduction of threading dislocation, effective scattering of light in the LED, and the suppression of light propagation into the silicon substrate by the NP GaN layer.

Some bifurcation routes to chaos of thermocapillary convection in two-dimensional liquid layers of finite extent

DOE Office of Scientific and Technical Information (OSTI.GOV)

Li, K., E-mail: likai@imech.ac.cn; University of Chinese Academy of Sciences, Beijing 100190; Xun, B.

2016-05-15

As a part of the preliminary studies for the future space experiment (Zona-K) in the Russian module of the International Space Station, some bifurcation routes to chaos of thermocapillary convection in two-dimensional liquid layers filled with 10 cSt silicone oil have been numerically studied in this paper. As the laterally applied temperature difference is raised, variations in the spatial structure and temporal evolution of the thermocapillary convection and a complex sequence of transitions are observed. The results show that the finite extent of the liquid layer significantly influences the tempo-spatial evolution of the thermocapillary convection. Moreover, the bifurcation route ofmore » the thermocapillary convection changes very sensitively by the aspect ratio of the liquid layer. With the increasing Reynolds number (applied temperature difference), the steady thermocapillary convection experiences two consecutive transitions from periodic oscillatory state to quasi-periodic oscillatory state with frequency-locking before emergence of chaotic convection in a liquid layer of aspect ratio 14.25, and the thermocapillary convection undergoes period-doubling cascades leading to chaotic convection in a liquid layer of aspect ratio 13.0.« less

Improved Starting Materials for Back-Illuminated Imagers

NASA Technical Reports Server (NTRS)

Pain, Bedabrata

2009-01-01

An improved type of starting materials for the fabrication of silicon-based imaging integrated circuits that include back-illuminated photodetectors has been conceived, and a process for making these starting materials is undergoing development. These materials are intended to enable reductions in dark currents and increases in quantum efficiencies, relative to those of comparable imagers made from prior silicon-on-insulator (SOI) starting materials. Some background information is prerequisite to a meaningful description of the improved starting materials and process. A prior SOI starting material, depicted in the upper part the figure, includes: a) A device layer on the front side, typically between 2 and 20 m thick, made of p-doped silicon (that is, silicon lightly doped with an electron acceptor, which is typically boron); b) A buried oxide (BOX) layer (that is, a buried layer of oxidized silicon) between 0.2 and 0.5 m thick; and c) A silicon handle layer (also known as a handle wafer) on the back side, between about 600 and 650 m thick. After fabrication of the imager circuitry in and on the device layer, the handle wafer is etched away, the BOX layer acting as an etch stop. In subsequent operation of the imager, light enters from the back, through the BOX layer. The advantages of back illumination over front illumination have been discussed in prior NASA Tech Briefs articles.

Double silicone tube intubation for the management of partial lacrimal system obstruction.

PubMed

Demirci, Hakan; Elner, Victor M

2008-02-01

To evaluate the effectiveness of double silicone intubation for the management of partial lacrimal drainage system obstruction in adults. Observational retrospective case series. Twenty-four eyes of 18 consecutive adult patients with partial lacrimal system obstruction managed at the University of Michigan. Retrospective review of symptoms and signs, duration of silicone intubation, and complications. Resolution of tearing. Preoperative tearing, negative Jones I testing, positive Jones II testing, and resistance to positive-pressure irrigation were present in all eyes (100%). The first silicone tube was removed after a mean of 11+/-7 months, and the second tube after 16+/-6 months. Postoperatively, at a mean of 21+/-9 months after removal of both tubes, tearing remained resolved in 19 eyes (79%) and remained improved in 2 eyes (8%). In eyes with resolved tearing, Jones I testing became positive, and there was no resistance to positive-pressure irrigation. Persistent tearing in 3 eyes (13%) required treatment with external dacryocystorhinostomy. The only complication was peripunctal pyogenic granulomas in 2 eyes. Double silicone intubation is an effective minimally invasive technique for treatment of partial lacrimal system obstruction in adults.

Optimization and characterization of biomolecule immobilization on silicon substrates using (3-aminopropyl)triethoxysilane (APTES) and glutaraldehyde linker

NASA Astrophysics Data System (ADS)

Gunda, Naga Siva Kumar; Singh, Minashree; Norman, Lana; Kaur, Kamaljit; Mitra, Sushanta K.

2014-06-01

In the present work, we developed and optimized a technique to produce a thin, stable silane layer on silicon substrate in a controlled environment using (3-aminopropyl)triethoxysilane (APTES). The effect of APTES concentration and silanization time on the formation of silane layer is studied using spectroscopic ellipsometry and Fourier transform infrared spectroscopy (FTIR). Biomolecules of interest are immobilized on optimized silane layer formed silicon substrates using glutaraldehyde linker. Surface analytical techniques such as ellipsometry, FTIR, contact angle measurement system, and atomic force microscopy are employed to characterize the bio-chemically modified silicon surfaces at each step of the biomolecule immobilization process. It is observed that a uniform, homogenous and highly dense layer of biomolecules are immobilized with optimized silane layer on the silicon substrate. The developed immobilization method is successfully implemented on different silicon substrates (flat and pillar). Also, different types of biomolecules such as anti-human IgG (rabbit monoclonal to human IgG), Listeria monocytogenes, myoglobin and dengue capture antibodies were successfully immobilized. Further, standard sandwich immunoassay (antibody-antigen-antibody) is employed on respective capture antibody coated silicon substrates. Fluorescence microscopy is used to detect the respective FITC tagged detection antibodies bound to the surface after immunoassay.

Graphene synthesized on porous silicon for active electrode material of supercapacitors

NASA Astrophysics Data System (ADS)

Su, B. B.; Chen, X. Y.; Halvorsen, E.

2016-11-01

We present graphene synthesized by chemical vapour deposition under atmospheric pressure on both porous nanostructures and flat wafers as electrode scaffolds for supercapacitors. A 3nm thin gold layer was deposited on samples of both porous and flat silicon for exploring the catalytic influence during graphene synthesis. Micro-four-point probe resistivity measurements revealed that the resistivity of porous silicon samples was nearly 53 times smaller than of the flat silicon ones when all the samples were covered by a thin gold layer after the graphene growth. From cyclic voltammetry, the average specific capacitance of porous silicon coated with gold was estimated to 267 μF/cm2 while that without catalyst layer was 145μF/cm2. We demonstrated that porous silicon based on nanorods can play an important role in graphene synthesis and enable silicon as promising electrodes for supercapacitors.

Porous siliconformation and etching process for use in silicon micromachining

DOEpatents

Guilinger, Terry R.; Kelly, Michael J.; Martin, Jr., Samuel B.; Stevenson, Joel O.; Tsao, Sylvia S.

1991-01-01

A reproducible process for uniformly etching silicon from a series of micromechanical structures used in electrical devices and the like includes providing a micromechanical structure having a silicon layer with defined areas for removal thereon and an electrochemical cell containing an aqueous hydrofluoric acid electrolyte. The micromechanical structure is submerged in the electrochemical cell and the defined areas of the silicon layer thereon are anodically biased by passing a current through the electrochemical cell for a time period sufficient to cause the defined areas of the silicon layer to become porous. The formation of the depth of the porous silicon is regulated by controlling the amount of current passing through the electrochemical cell. The micromechanical structure is then removed from the electrochemical cell and submerged in a hydroxide solution to remove the porous silicon. The process is subsequently repeated for each of the series of micromechanical structures to achieve a reproducibility better than 0.3%.

SOI-silicon as structural layer for NEMS applications

NASA Astrophysics Data System (ADS)

Villarroya, Maria; Figueras, Eduard; Perez-Murano, Francesc; Campabadal, Francesca; Esteve, Jaume; Barniol, Nuria

2003-04-01

The objective of this paper is to present the compatibilization between a standard CMOS on bulk silicon process and the fabrication of nanoelectromechanical systems using Silicon On Insulator (SOI) wafers as substrate. This compatibilization is required as first step to fabricate a very high sensitive mass sensor based on a resonant cantilever with nanometer dimensions using the crystal silicon COI layer as the structural layer. The cantilever is driven electrostatically to its resonance frequency by an electrode placed parallel to the cantilever. A capacitive readout is performed. To achieve very high resolution, very small dimensions of the cantilever (nanometer range) are needed. For this reason, the control and excitation circuitry has to be integrated on the same substrate than the cantilever. Prior to the development of this sensor, it is necessary to develop a substrate able to be used first to integrate a standard CMOS circuit and afterwards to fabricate the nano-resonator. Starting from a SOI wafer and using very simple processes, the SOI silicon layer is removed, except from the areas in which nano-structures will be fabricated; obtaining a silicon substrate with islands with a SOI structure. The CMOS circuitry will be integrated on the bulk silicon region, while the remainder SOI region will be used for the nanoresonator. The silicon oxide of this SOI region is used as insulator; and as sacrificial layer, etched to release the cantilever from the substrate. To assure the cover of the different CMOS layers over the step of the islands, it is essential to avoid very sharp steps.

Esthetic management of a primary double tooth using a silicone putty guide: a case report.

PubMed

Agarwal, Ravi; Chaudhry, Kalpna; Yeluri, Ramakrishna; Munshi, Autar Krishen

2013-03-01

The term double tooth is often used to describe fusion and gemination. The development of isolated large or joined teeth is not rare, but the literature is confusing when the appropriate terminology is presented. The objective of this paper is to present a case of a primary double tooth in a 5-year-old girl with a history of trauma. The tooth was endodontically treated and esthetic management was carried out using a silicone putty guide.

Electron spin resonance and spin-valley physics in a silicon double quantum dot.

PubMed

Hao, Xiaojie; Ruskov, Rusko; Xiao, Ming; Tahan, Charles; Jiang, HongWen

2014-05-14

Silicon quantum dots are a leading approach for solid-state quantum bits. However, developing this technology is complicated by the multi-valley nature of silicon. Here we observe transport of individual electrons in a silicon CMOS-based double quantum dot under electron spin resonance. An anticrossing of the driven dot energy levels is observed when the Zeeman and valley splittings coincide. A detected anticrossing splitting of 60 MHz is interpreted as a direct measure of spin and valley mixing, facilitated by spin-orbit interaction in the presence of non-ideal interfaces. A lower bound of spin dephasing time of 63 ns is extracted. We also describe a possible experimental evidence of an unconventional spin-valley blockade, despite the assumption of non-ideal interfaces. This understanding of silicon spin-valley physics should enable better control and read-out techniques for the spin qubits in an all CMOS silicon approach.

Formation of unexpected silicon- and disiloxane-bridged multiferrocenyl derivatives bearing Si-O-CH[double bond, length as m-dash]CH2 and Si-(CH2)2C(CH3)3 substituents via cleavage of tetrahydrofuran and trapping of its ring fragments.

PubMed

Bruña, Sonia; González-Vadillo, Ana Mª; Ferrández, Marta; Perles, Josefina; Montero-Campillo, M Merced; Mó, Otilia; Cuadrado, Isabel

2017-09-12

The formation of a family of silicon- and siloxane-bridged multiferrocenyl derivatives carrying different functional groups attached to silicon, including Fc 2 (CH 3 ) 3 C(CH 2 ) 2 SiCH[double bond, length as m-dash]CH 2 (5), Fc 2 (CH 2 [double bond, length as m-dash]CH-O)SiCH[double bond, length as m-dash]CH 2 (6), Fc 2 (OH)SiCH[double bond, length as m-dash]CH 2 (7), Fc 2 (CH 2 [double bond, length as m-dash]CH-O)Si-O-Si(O-CH[double bond, length as m-dash]CH 2 )Fc 2 (8) and Fc 2 (CH 2 [double bond, length as m-dash]CH-O)Si-O-SiFc 3 (9) is described. Silyl vinyl ether molecules 6, 8 and 9 and the heteroleptic vinylsilane 5 resulted from the competing metathesis reaction of lithioferrocene (FcLi), CH 2 [double bond, length as m-dash]CH-OLi or (CH 3 ) 3 C(CH 2 ) 2 Li with the corresponding multifunctional chlorosilane, Cl 3 SiCH[double bond, length as m-dash]CH 2 or Cl 3 Si-O-SiCl 3 . The last two organolithium species have been likely formed in situ by fragmentation of the tetrahydrofuran solvent. Diferrocenylvinyloxyvinylsilane 6 is noteworthy since it represents a rare example of a redox-active silyl mononomer in which two different C[double bond, length as m-dash]C polymerisable groups are directly connected to silicon. The molecular structures of the silicon-containing multiferrocenyl species 5, 6, 8 and 9 have been investigated by single-crystal X-ray diffraction studies, demonstrating the capture and storage processes of two ring fragments resulting from the cleavage of cyclic THF in redox-active and stable crystalline organometallic compounds. From electrochemical studies we found that by changing the anion of the supporting electrolyte from [PF 6 ] - to [B(C 6 F 5 ) 4 ] - , the redox behaviour of tetrametallic disiloxane 8 can be switched from a poorly resolved multistep redox process to four consecutive well-separated one-electron oxidations, corresponding to the sequential oxidation of the four ferrocenyl moieties.

Method for making circular tubular channels with two silicon wafers

DOEpatents

Yu, C.M.; Hui, W.C.

1996-11-19

A two-wafer microcapillary structure is fabricated by depositing boron nitride (BN) or silicon nitride (Si{sub 3}N{sub 4}) on two separate silicon wafers (e.g., crystal-plane silicon with [100] or [110] crystal orientation). Photolithography is used with a photoresist to create exposed areas in the deposition for plasma etching. A slit entry through to the silicon is created along the path desired for the ultimate microcapillary. Acetone is used to remove the photoresist. An isotropic etch, e.g., such as HF/HNO{sub 3}/CH{sub 3}COOH, then erodes away the silicon through the trench opening in the deposition layer. A channel with a half-circular cross section is then formed in the silicon along the line of the trench in the deposition layer. Wet etching is then used to remove the deposition layer. The two silicon wafers are aligned and then bonded together face-to-face to complete the microcapillary. 11 figs.

Amorphous silicon solar cell allowing infrared transmission

DOEpatents

Carlson, David E.

1979-01-01

An amorphous silicon solar cell with a layer of high index of refraction material or a series of layers having high and low indices of refraction material deposited upon a transparent substrate to reflect light of energies greater than the bandgap energy of the amorphous silicon back into the solar cell and transmit solar radiation having an energy less than the bandgap energy of the amorphous silicon.

Structural and electronic properties of boron-doped double-walled silicon carbide nanotubes

NASA Astrophysics Data System (ADS)

Behzad, Somayeh; Moradian, Rostam; Chegel, Raad

2010-12-01

The effects of boron doping on the structural and electronic properties of (6,0)@(14,0) double-walled silicon carbide nanotube (DWSiCNT) are investigated by using spin-polarized density functional theory. It is found that boron atom could be more easily doped in the inner tube. Our calculations indicate that a Si site is favorable for B under C-rich condition and a C site is favorable under Si-rich condition. Additionally, B-substitution at either single carbon or silicon atom site in DWSiCNT could induce spontaneous magnetization.

Plasma-deposited fluoropolymer film mask for local porous silicon formation

PubMed Central

2012-01-01

The study of an innovative fluoropolymer masking layer for silicon anodization is proposed. Due to its high chemical resistance to hydrofluoric acid even under anodic bias, this thin film deposited by plasma has allowed the formation of deep porous silicon regions patterned on the silicon wafer. Unlike most of other masks, fluoropolymer removal after electrochemical etching is rapid and does not alter the porous layer. Local porous regions were thus fabricated both in p+-type and low-doped n-type silicon substrates. PMID:22734507

Purification of silicon powder by the formation of thin porous layer followed byphoto-thermal annealing.

PubMed

Khalifa, Marouan; Hajji, Messaoud; Ezzaouia, Hatem

2012-08-08

Porous silicon has been prepared using a vapor-etching based technique on a commercial silicon powder. Strong visible emission was observed in all samples. Obtained silicon powder with a thin porous layer at the surface was subjected to a photo-thermal annealing at different temperatures under oxygen atmosphere followed by a chemical treatment. Inductively coupled plasma atomic emission spectrometry results indicate that silicon purity is improved from 99.1% to 99.994% after annealing at 900°C.

Purification of silicon powder by the formation of thin porous layer followed byphoto-thermal annealing

PubMed Central

2012-01-01

Porous silicon has been prepared using a vapor-etching based technique on a commercial silicon powder. Strong visible emission was observed in all samples. Obtained silicon powder with a thin porous layer at the surface was subjected to a photo-thermal annealing at different temperatures under oxygen atmosphere followed by a chemical treatment. Inductively coupled plasma atomic emission spectrometry results indicate that silicon purity is improved from 99.1% to 99.994% after annealing at 900°C. PMID:22873706

Passivation coating for flexible substrate mirrors

DOEpatents

Tracy, C. Edwin; Benson, David K.

1990-01-01

A protective diffusion barrier for metalized mirror structures is provided by a layer or coating of silicon nitride which is a very dense, transparent, dielectric material that is impervious to water, alkali, and other impurities and corrosive substances that typically attack the metal layers of mirrors and cause degradation of the mirrors' reflectivity. The silicon nitride layer can be deposited on the substrate before metal deposition thereon to stabilize the metal/substrate interface, and it can be deposited over the metal to encapsulate it and protect the metal from corrosion or other degradation. Mirrors coated with silicon nitride according to this invention can also be used as front surface mirrors. Also, the silver or other reflective metal layer on mirrors comprising thin, lightweight, flexible substrates of metal or polymer sheets coated with glassy layers can be protected with silicon nitride according to this invention.

Electrodeposition of platinum and silver into chemically modified microporous silicon electrodes

PubMed Central

2012-01-01

Electrodeposition of platinum and silver into hydrophobic and hydrophilic microporous silicon layers was investigated using chemically modified microporous silicon electrodes. Hydrophobic microporous silicon enhanced the electrodeposition of platinum in the porous layer. Meanwhile, hydrophilic one showed that platinum was hardly deposited within the porous layer, and a film of platinum on the top of the porous layer was observed. On the other hand, the electrodeposition of silver showed similar deposition behavior between these two chemically modified electrodes. It was also found that the electrodeposition of silver started at the pore opening and grew toward the pore bottom, while a uniform deposition from the pore bottom was observed in platinum electrodeposition. These electrodeposition behaviors are explained on the basis of the both effects, the difference in overpotential for metal deposition on silicon and on the deposited metal, and displacement deposition rate of metal. PMID:22720690

Antifuse with a single silicon-rich silicon nitride insulating layer

DOEpatents

Habermehl, Scott D.; Apodaca, Roger T.

2013-01-22

An antifuse is disclosed which has an electrically-insulating region sandwiched between two electrodes. The electrically-insulating region has a single layer of a non-hydrogenated silicon-rich (i.e. non-stoichiometric) silicon nitride SiN.sub.X with a nitrogen content X which is generally in the range of 0

Study of thickness and uniformity of oxide passivation with DI-O3 on silicon substrate for electronic and photonic applications

NASA Astrophysics Data System (ADS)

Sharma, Mamta; Hazra, Purnima; Singh, Satyendra Kumar

2018-05-01

Since the beginning of semiconductor fabrication technology evolution, clean and passivated substrate surface is one of the prime requirements for fabrication of Electronic and optoelectronic device fabrication. However, as the scale of silicon circuits and device architectures are continuously decreased from micrometer to nanometer (from VLSI to ULSI technology), the cleaning methods to achieve better wafer surface qualities has raised research interests. The development of controlled and uniform silicon dioxide is the most effective and reliable way to achieve better wafer surface quality for fabrication of electronic devices. On the other hand, in order to meet the requirement of high environment safety/regulatory standards, the innovation of cleaning technology is also in demand. The controlled silicon dioxide layer formed by oxidant de-ionized ozonated water has better uniformity. As the uniformity of the controlled silicon dioxide layer is improved on the substrate, it enhances the performance of the devices. We can increase the thickness of oxide layer, by increasing the ozone time treatment. We reported first time to measurement of thickness of controlled silicon dioxide layer and obtained the uniform layer for same ozone time.

Low temperature electrodeposition of silicon layers

NASA Astrophysics Data System (ADS)

Pauporté, Thierry; Qi, Shuo; Viana, Bruno

2018-02-01

The electrodeposition of silicon at room temperature in 1-Butyl-1-methylpyrrolidinium bis(trifluoromethanesulfonyl)imide and N-Propyl-N-methylpyrrolidinium bis(trifluoromethanesulfonyl)imide ionic liquids containing SiCl4 salt is shown. The electrodeposition window has been determined by cyclic voltammetry. Layers have been deposited in a three electrode cell placed in an inert atmosphere and at constant applied potential. The characterizations by x-ray diffraction and Raman spectroscopy showed the formation of a layer made of amorphous silicon. The scanning electron microscopy examination revealed that the layers were featureless and well-covering.

The silane depletion fraction as an indicator for the amorphous/crystalline silicon interface passivation quality

NASA Astrophysics Data System (ADS)

Descoeudres, A.; Barraud, L.; Bartlome, R.; Choong, G.; De Wolf, Stefaan; Zicarelli, F.; Ballif, C.

2010-11-01

In silicon heterojunction solar cells, thin amorphous silicon layers passivate the crystalline silicon wafer surfaces. By using in situ diagnostics during plasma-enhanced chemical vapor deposition (PECVD), the authors report how the passivation quality of such layers directly relate to the plasma conditions. Good interface passivation is obtained from highly depleted silane plasmas. Based upon this finding, layers deposited in a large-area very high frequency (40.68 MHz) PECVD reactor were optimized for heterojunction solar cells, yielding aperture efficiencies up to 20.3% on 4 cm2 cells.

Fabrication of novel silicone capsules with tunable mechanical properties by microfluidic techniques.

PubMed

Vilanova, Neus; Rodríguez-Abreu, Carlos; Fernández-Nieves, Alberto; Solans, Conxita

2013-06-12

A novel approach for the synthesis of silicone capsules using double W/O/W emulsions as templates is introduced. The low viscosity of the silicone precursors enables the use of microfluidic techniques to accurately control the size and morphology of the double emulsion droplets, which after cross-linking result in the desired monodisperse silicone capsules. Their shell thickness can be finely tuned, which in turn allows control over their permeability and mechanical properties; the latter are particularly important in a variety of practical applications where the capsules are subjected to large external forces. The potential of these capsules for controlled release is also demonstrated using a model hydrophilic substance.

Micromachined mold-type double-gated metal field emitters

NASA Astrophysics Data System (ADS)

Lee, Yongjae; Kang, Seokho; Chun, Kukjin

1997-12-01

Electron field emitters with double gates were fabricated using micromachining technology and the effect of the electric potential of the focusing gate (or second gate) was experimentally evaluated. The molybdenum field emission tip was made by filling a cusplike mold formed when a conformal film was deposited on the hole-trench that had been patterned on stacked metals and dielectric layers. The hole-trench was patterned by electron beam lithography and reactive ion etching. Each field emitter has a 0960-1317/7/4/009/img1 diameter extraction gate (or first gate) and a 0960-1317/7/4/009/img2 diameter focusing gate (or second gate). To make a path for the emitted electrons, silicon bulk was etched anisotropically in KOH and EDP (ethylene-diamine pyrocatechol) solution successively. The I - V characteristics and anode current change due to the focusing gate potential were measured.

Efficient thermoelectric device

NASA Technical Reports Server (NTRS)

Ila, Daryush (Inventor)

2010-01-01

A high efficiency thermo electric device comprising a multi nanolayer structure of alternating insulator and insulator/metal material that is irradiated across the plane of the layer structure with ionizing radiation. The ionizing radiation produces nanocrystals in the layered structure that increase the electrical conductivity and decrease the thermal conductivity thereby increasing the thermoelectric figure of merit. Figures of merit as high as 2.5 have been achieved using layers of co-deposited gold and silicon dioxide interspersed with layers of silicon dioxide. The gold to silicon dioxide ratio was 0.04. 5 MeV silicon ions were used to irradiate the structure. Other metals and insulators may be substituted. Other ionizing radiation sources may be used. The structure tolerates a wide range of metal to insulator ratio.

Electrolytic etch for preventing electrical shorts in solar cells on polymer surfaces

DOEpatents

Weber, Michael F.

1991-10-08

A method for preventing shorts and shunts in solar cells having in order, an insulating substrate, a conductive metal layer on the substrate, an amorphous silicon layer and a transparent conductive layer. The method includes anodic etching of exposed portions of the metal layer after deposition of the amorphous silicon and prior to depositing the transparent conductive layer.

Electronic properties of Al xGa 1- xAs surface passivated by ultrathin silicon interface control layer

NASA Astrophysics Data System (ADS)

Adamowicz, B.; Miczek, M.; Ikeya, K.; Mutoh, M.; Saitoh, T.; Fujikura, H.; Hasegawa, H.

1999-03-01

The photoluminescence surface state spectroscopy (PLS 3) method was applied to a study of the surface state distribution ( NSS), effective surface recombination velocity ( Seff), electron ( EFn) and hole ( EFp) quasi-Fermi levels and band bending ( VS) on the Al 0.33Ga 0.67As surface air-exposed and passivated by the Si interface control layer (ICL) technique. Using the detailed measurements of the PL quantum efficiency for different excitation intensities, combined with the rigorous computer simulations of the bulk and surface recombination processes, the behavior and correlation among the surface characteristics under photo-excitation was determined. The present analysis indicated that forming of a Si 3N 4/Si ICL double layer (with a monolayer level control) on AlGaAs surface reduces the minimum interface state density down to 10 10 cm -2 eV -1 and surface recombination velocity to the range of 10 4 cm/s under low excitations.

The double layers in the plasma sheet boundary layer during magnetic reconnection

NASA Astrophysics Data System (ADS)

Guo, J.; Yu, B.

2014-11-01

We studied the evolutions of double layers which appear after the magnetic reconnection through two-dimensional electromagnetic particle-in-cell simulation. The simulation results show that the double layers are formed in the plasma sheet boundary layer after magnetic reconnection. At first, the double layers which have unipolar structures are formed. And then the double layers turn into bipolar structures, which will couple with another new weak bipolar structure. Thus a new double layer or tripolar structure comes into being. The double layers found in our work are about several ten Debye lengths, which accords with the observation results. It is suggested that the electron beam formed during the magnetic reconnection is responsible for the production of the double layers.

Zeta potential of microfluidic substrates: 1. Theory, experimental techniques, and effects on separations.

PubMed

Kirby, Brian J; Hasselbrink, Ernest F

2004-01-01

This paper summarizes theory, experimental techniques, and the reported data pertaining to the zeta potential of silica and silicon with attention to use as microfluidic substrate materials, particularly for microchip chemical separations. Dependence on cation concentration, buffer and cation type, pH, cation valency, and temperature are discussed. The Debye-Hückel limit, which is often correctly treated as a good approximation for describing the ion concentration in the double layer, can lead to serious errors if it is extended to predict the dependence of zeta potential on the counterion concentration. For indifferent univalent electrolytes (e.g., sodium and potassium), two simple scalings for the dependence of zeta potential on counterion concentration can be derived in high- and low-zeta limits of the nonlinear Poisson-Boltzman equation solution in the double layer. It is shown that for most situations relevant to microchip separations, the high-zeta limit is most applicable, leading to the conclusion that the zeta potential on silica substrates is approximately proportional to the logarithm of the molar counterion concentration. The zeta vs. pH dependence measurements from several experiments are compared by normalizing the zeta based on concentration.

MBE growth and optical properties of GaN layers on SiC/Si(111) hybrid substrate

NASA Astrophysics Data System (ADS)

Reznik, R. R.; Kotlyar, K. P.; Soshnikov, I. P.; Kukushkin, S. A.; Osipov, A. V.; Nikitina, E. V.; Cirlin, G. E.

2017-11-01

The fundamental possibility of the growth of GaN layers by molecular-beam epitaxy on a silicon substrate with nanoscale buffer layer of silicon carbide without any AlN layers has been demonstrated for the first time. Morphological properties of the resulting system have been studied.

Passivation of InGaAs(001)-(2 × 4) by Self-Limiting Chemical Vapor Deposition of a Silicon Hydride Control Layer.

PubMed

Edmonds, Mary; Kent, Tyler; Chagarov, Evgueni; Sardashti, Kasra; Droopad, Ravi; Chang, Mei; Kachian, Jessica; Park, Jun Hong; Kummel, Andrew

2015-07-08

A saturated Si-Hx seed layer for gate oxide or contact conductor ALD has been deposited via two separate self-limiting and saturating CVD processes on InGaAs(001)-(2 × 4) at substrate temperatures of 250 and 350 °C. For the first self-limiting process, a single silicon precursor, Si3H8, was dosed at a substrate temperature of 250 °C, and XPS results show the deposited silicon hydride layer saturated at about 4 monolayers of silicon coverage with hydrogen termination. STS results show the surface Fermi level remains unpinned following the deposition of the saturated silicon hydride layer, indicating the InGaAs surface dangling bonds are electrically passivated by Si-Hx. For the second self-limiting process, Si2Cl6 was dosed at a substrate temperature of 350 °C, and XPS results show the deposited silicon chloride layer saturated at about 2.5 monolayers of silicon coverage with chlorine termination. Atomic hydrogen produced by a thermal gas cracker was subsequently dosed at 350 °C to remove the Si-Cl termination by replacing with Si-H termination as confirmed by XPS, and STS results confirm the saturated Si-Hx bilayer leaves the InGaAs(001)-(2 × 4) surface Fermi level unpinned. Density function theory modeling of silicon hydride surface passivation shows an Si-Hx monolayer can remove all the dangling bonds and leave a charge balanced surface on InGaAs.

Synthesis and Characterization of 2-D Materials

NASA Astrophysics Data System (ADS)

Pazos, S.; Sahoo, P.; Afaneh, T.; Rodriguez Gutierrez, H.

Atomically thin transition-metal dichacogenides (TMD), graphene, and boron nitride (BN) are two-dimensional materials where the charge carriers (electrons and holes) are confined to move in a plane. They exhibit distinctive optoelectronic properties compared to their bulk layered counterparts. When combined into heterostructures, these materials open more possibilities in terms of new properties and device functionality. In this work, WSe2 and graphene were grown using Chemical Vapor Deposition (CVD) and Physical Vapor Deposition (PVD) techniques. The quality and morphology of each material was checked using Raman, Photoluminescence Spectroscopy, and Scanning Electron Microscopy. Graphene had been successfully grown homogenously, characterized, and transferred from copper to silicon dioxide substrates; these films will be used in future studies to build 2-D devices. Different morphologies of WSe2 2-D islands were successfully grown on SiO2 substrates. Depending on the synthesis conditions, the material on each sample had single layer, double layer, and multi-layer areas. A variety of 2-D morphologies were also observed in the 2-D islands. This project is supported by the NSF REU Grant #1560090 and NSF Grant #DMR-1557434.

Development of a new low cost antireflective coating technique for solar cells

NASA Technical Reports Server (NTRS)

Wohlgemuth, J. H.; Warfield, D. B.; Johnson, G. A.

1982-01-01

The goal of this study was the development of an antireflective (AR) coating technique that has the potential for high throughput and low cost yet is capable of producing films of good optical quality. Previous efforts to develop sprayed AR coatings had utilized titanium isopropoxide mixed with volatile solvents. These films worked well on smooth surfaces but when applied to etched semi-crystalline silicon surfaces yielded inconsistent results with more than 20 percent of the AM1 incident light being reflected. In this program titanium isopropoxide was sprayed directly onto heater wafers (410 C) to produce a uniform AR coating even on highly textured surfaces. Tests on various types of solar cells yielded performance improvements for the hot sprayed AR cells that are equivalent to that observed for evaporated TiOx AR coated cells. As an extension of this effort a new double layer AR consisting of a bottom layer of hot sprayed titanium isopropoxide and a top layer of hot sprayed aluminum isopropoxide in methylene chloride has resulted in more than 10 percent improvement in cell output as compared to a single layer AR cell.

Structural and electrical properties of Pb(Zr ,Ti)O3 grown on (0001) GaN using a double PbTiO3/PbO bridge layer

NASA Astrophysics Data System (ADS)

Xiao, Bo; Gu, Xing; Izyumskaya, Natalia; Avrutin, Vitaliy; Xie, Jinqiao; Liu, Huiyong; Morkoç, Hadis

2007-10-01

Pb(Zr0.52Ti0.48)O3 films were deposited by rf magnetron sputtering on silicon-doped GaN(0001)/c-sapphire with a PbTiO3/PbO oxide bridge layer grown by molecular beam epitaxy. X-ray diffraction data showed the highly (111)-oriented perovskite phase in lead zirconate titanate (PZT) films with PbTiO3/PbO bridge layers, compared to the pyrochlore phase grown directly on GaN. The in-plane epitaxial relationships were found from x-ray pole figures to be PZT[112¯]‖GaN[11¯00] and PZT[11¯0]‖GaN[112¯0]. The polarization-electric field measurements revealed the ferroelectric behavior with remanent polarization of 30-40μC /cm2 and asymmetric hysteresis loops due to the depletion layer formed in GaN under reverse bias which resulted in a high negative coercive electric field (950kV/cm).

HOLE-BLOCKING LAYERS FOR SILICON/ORGANIC HETEROJUNCTIONS: A NEW CLASS OF HIGH-EFFICIENCY LOW-COST PV

DOE Office of Scientific and Technical Information (OSTI.GOV)

Sturm, James

This project is the first investigation of the use of thin titanium dioxide layers on silicon as a hole-blocking / electron-transparent selective contact to silicon. The work was motivated by the goal of a high-efficiency low-cost silicon-based solar cells that could be processed entirely at low temperature (300 Degree Celsius) or less, without requiring plasma-processing.

Monolithically interconnected silicon-film™ module technology

NASA Astrophysics Data System (ADS)

DelleDonne, E. J.; Ford, D. H.; Hall, R. B.; Ingram, A. E.; Rand, J. A.; Barnett, A. M.

1999-03-01

AstroPower is developing an advanced thin-silicon-based, photovoltaic module product. A low-cost monolithic interconnected device is being integrated into a module that combines the design and process features of advanced light trapped, thin-silicon solar cells. This advanced product incorporates a low-cost substrate, a nominally 50-μm thick grown silicon layer with minority carrier diffusion lengths exceeding the active layer thickness, light trapping due to back-surface reflection, and back-surface passivation. The thin silicon layer enables high solar cell performance and can lead to a module conversion efficiency as high as 19%. These performance design features, combined with low-cost manufacturing using relatively low-cost capital equipment, continuous processing and a low-cost substrate, will lead to high-performance, low-cost photovoltaic panels.

Sinusoidal nanotextures for light management in silicon thin-film solar cells.

PubMed

Köppel, G; Rech, B; Becker, C

2016-04-28

Recent progresses in liquid phase crystallization enabled the fabrication of thin wafer quality crystalline silicon layers on low-cost glass substrates enabling conversion efficiencies up to 12.1%. Because of its indirect band gap, a thin silicon absorber layer demands for efficient measures for light management. However, the combination of high quality crystalline silicon and light trapping structures is still a critical issue. Here, we implement hexagonal 750 nm pitched sinusoidal and pillar shaped nanostructures at the sun-facing glass-silicon interface into 10 μm thin liquid phase crystallized silicon thin-film solar cell devices on glass. Both structures are experimentally studied regarding their optical and optoelectronic properties. Reflection losses are reduced over the entire wavelength range outperforming state of the art anti-reflective planar layer systems. In case of the smooth sinusoidal nanostructures these optical achievements are accompanied by an excellent electronic material quality of the silicon absorber layer enabling open circuit voltages above 600 mV and solar cell device performances comparable to the planar reference device. For wavelengths smaller than 400 nm and higher than 700 nm optical achievements are translated into an enhanced quantum efficiency of the solar cell devices. Therefore, sinusoidal nanotextures are a well-balanced compromise between optical enhancement and maintained high electronic silicon material quality which opens a promising route for future optimizations in solar cell designs for silicon thin-film solar cells on glass.

A silk sericin/silicone nerve guidance conduit promotes regeneration of a transected sciatic nerve.

PubMed

Xie, Hongjian; Yang, Wen; Chen, Jianghai; Zhang, Jinxiang; Lu, Xiaochen; Zhao, Xiaobo; Huang, Kun; Li, Huili; Chang, Panpan; Wang, Zheng; Wang, Lin

2015-10-28

Peripheral nerve gap defects lead to significant loss of sensory or motor function. Tissue engineering has become an important alternative to nerve repair. Sericin, a major component of silk, is a natural protein whose value in tissue engineering has just begun to be explored. Here, the first time use of sericin in vivo is reported as a long-term implant for peripheral nerve regeneration. A sericin nerve guidance conduit is designed and fabricated. This conduit is highly porous with mechanical strength matching peripheral nerve tissue. It supports Schwann cell proliferation and is capable of up-regulating the transcription of glial cell derived neurotrophic factor and nerve growth factor in Schwann cells. The sericin conduit wrapped with a silicone conduit (sericin/silicone double conduits) is used for bridging repair of a 5 mm gap in a rat sciatic nerve transection model. The sericin/silicone double conduits achieve functional recovery comparable to that of autologous nerve grafting as evidenced by drastically improved nerve function and morphology. Importantly, this improvement is mainly attributed to the sericin conduit as the silicone conduit alone only produces marginal functional recovery. This sericin/silicone-double-conduit strategy offers an efficient and valuable alternative to autologous nerve grafting for repairing damaged peripheral nerve. © 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

High-performance SEGISFET pH Sensor using the structure of double-gate a-IGZO TFTs with engineered gate oxides

NASA Astrophysics Data System (ADS)

Pyo, Ju-Young; Cho, Won-Ju

2017-03-01

In this paper, we propose a high-performance separative extended gate ion-sensitive field-effect transistor (SEGISFET) that consists of a tin dioxide (SnO2) SEG sensing part and a double-gate structure amorphous indium gallium zinc oxide (a-IGZO) thin-film transistor (TFT) with tantalum pentoxide/silicon dioxide (Ta2O5/SiO2)-engineered top-gate oxide. To increase sensitivity, we maximized the capacitive coupling ratio by applying high-k dielectric at the top-gate oxide layer. As an engineered top-gate oxide, a stack of 25 nm-thick Ta2O5 and 10 nm-thick SiO2 layers was found to simultaneously satisfy a small equivalent oxide thickness (˜17.14 nm), a low leakage current, and a stable interfacial property. The threshold-voltage instability, which is a fundamental issue in a-IGZO TFTs, was improved by low-temperature post-deposition annealing (˜87 °C) using microwave irradiation. The double-gate structure a-IGZO TFTs with engineered top-gate oxide exhibited high mobility, small subthreshold swing, high drive current, and larger on/off current ratio. The a-IGZO SEGISFETs with a dual-gate sensing mode showed a pH sensitivity of 649.04 mV pH-1, which is far beyond the Nernst limit. The non-ideal behavior of ISFETs, hysteresis, and drift effect also improved. These results show that the double-gate structure a-IGZO TFTs with engineered top-gate oxide can be a good candidate for cheap and disposable SEGISFET sensors.

Nested potassium hydroxide etching and protective coatings for silicon-based microreactors

NASA Astrophysics Data System (ADS)

de Mas, Nuria; Schmidt, Martin A.; Jensen, Klavs F.

2014-03-01

We have developed a multilayer, multichannel silicon-based microreactor that uses elemental fluorine as a reagent and generates hydrogen fluoride as a byproduct. Nested potassium hydroxide etching (using silicon nitride and silicon oxide as masking materials) was developed to create a large number of channels (60 reaction channels connected to individual gas and liquid distributors) of significantly different depths (50-650 µm) with sloped walls (54.7° with respect to the (1 0 0) wafer surface) and precise control over their geometry. The wetted areas were coated with thermally grown silicon oxide and electron-beam evaporated nickel films to protect them from the corrosive fluorination environment. Up to four Pyrex layers were anodically bonded to three silicon layers in a total of six bonding steps to cap the microchannels and stack the reaction layers. The average pinhole density in as-evaporated films was 3 holes cm-2. Heating during anodic bonding (up to 350 °C for 4 min) did not significantly alter the film composition. Upon fluorine exposure, nickel films (160 nm thick) deposited on an adhesion layer of Cr (10 nm) over an oxidized silicon substrate (up to 500 nm thick SiO2) led to the formation of a nickel fluoride passivation layer. This microreactor was used to investigate direct fluorinations at room temperature over several hours without visible signs of film erosion.

Thin film photovoltaic device with multilayer substrate

DOEpatents

Catalano, Anthony W.; Bhushan, Manjul

1984-01-01

A thin film photovoltaic device which utilizes at least one compound semiconductor layer chosen from Groups IIB and VA of the Periodic Table is formed on a multilayer substrate The substrate includes a lowermost support layer on which all of the other layers of the device are formed. Additionally, an uppermost carbide or silicon layer is adjacent to the semiconductor layer. Below the carbide or silicon layer is a metal layer of high conductivity and expansion coefficient equal to or slightly greater than that of the semiconductor layer.

A thermal microprobe fabricated with wafer-stage processing

NASA Astrophysics Data System (ADS)

Zhang, Yongxia; Zhang, Yanwei; Blaser, Juliana; Sriram, T. S.; Enver, Ahsan; Marcus, R. B.

1998-05-01

A thermal microprobe has been designed and built for high resolution temperature sensing. The thermal sensor is a thin-film thermocouple junction at the tip of an atomic force microprobe (AFM) silicon probe needle. Only wafer-stage processing steps are used for the fabrication. For high resolution temperature sensing it is essential that the junction be confined to a short distance at the AFM tip. This confinement is achieved by a controlled photoresist coating process. Experiment prototypes have been made with an Au/Pd junction confined to within 0.5 μm of the tip, with the two metals separated elsewhere by a thin insulating oxide layer. Processing begins with double-polished, n-type, 4 in. diameter, 300-μm-thick silicon wafers. Atomically sharp probe tips are formed by a combination of dry and wet chemical etching, and oxidation sharpening. The metal layers are sputtering deposited and the cantilevers are released by a combination of KOH and dry etching. A resistively heated calibration device was made for temperature calibration of the thermal microprobe over the temperature range 25-110 °C. Over this range the thermal outputs of two microprobes are 4.5 and 5.6 μV/K and is linear. Thermal and topographical images are also obtained from a heated tungsten thin film fuse.

Development and characterization of a round hand-held silicon photomultiplier based gamma camera for intraoperative imaging

PubMed Central

Popovic, Kosta; McKisson, Jack E.; Kross, Brian; Lee, Seungjoon; McKisson, John; Weisenberger, Andrew G.; Proffitt, James; Stolin, Alexander; Majewski, Stan; Williams, Mark B.

2017-01-01

This paper describes the development of a hand-held gamma camera for intraoperative surgical guidance that is based on silicon photomultiplier (SiPM) technology. The camera incorporates a cerium doped lanthanum bromide (LaBr3:Ce) plate scintillator, an array of 80 SiPM photodetectors and a two-layer parallel-hole collimator. The field of view is circular with a 60 mm diameter. The disk-shaped camera housing is 75 mm in diameter, approximately 40.5 mm thick and has a mass of only 1.4 kg, permitting either hand-held or arm-mounted use. All camera components are integrated on a mobile cart that allows easy transport. The camera was developed for use in surgical procedures including determination of the location and extent of primary carcinomas, detection of secondary lesions and sentinel lymph node biopsy (SLNB). Here we describe the camera design and its principal operating characteristics, including spatial resolution, energy resolution, sensitivity uniformity, and geometric linearity. The gamma camera has an intrinsic spatial resolution of 4.2 mm FWHM, an energy resolution of 21.1 % FWHM at 140 keV, and a sensitivity of 481 and 73 cps/MBq when using the single- and double-layer collimators, respectively. PMID:28286345

Highly sensitive optically controlled tunable capacitor and photodetector based on a metal-insulator-semiconductor on silicon-on-insulator substrates

NASA Astrophysics Data System (ADS)

Mikhelashvili, V.; Cristea, D.; Meyler, B.; Yofis, S.; Shneider, Y.; Atiya, G.; Cohen-Hyams, T.; Kauffmann, Y.; Kaplan, W. D.; Eisenstein, G.

2015-01-01

We describe a new type of optically sensitive tunable capacitor with a wide band response ranging from the ultraviolet (245 nm) to the near infrared (880 nm). It is based on a planar Metal-Oxide-Semiconductor (MOS) structure fabricated on an insulator on silicon substrate where the insulator layer comprises a double layer dielectric stack of SiO2-HfO2. Two operating configurations have been examined, a single diode and a pair of back-to-back connected devices, where either one or both diodes are illuminated. The varactors exhibit, in all cases, very large sensitivities to illumination. Near zero bias, the capacitance dependence on illumination intensity is sub linear and otherwise it is nearly linear. In the back-to-back connected configuration, the reverse biased diode acts as a light tunable resistor whose value affects strongly the capacitance of the second, forward biased, diode and vice versa. The proposed device is superior to other optical varactors in its large sensitivity to illumination in a very broad wavelength range (245 nm-880 nm), the strong capacitance dependence on voltage and the superior current photo responsivity. Above and beyond that structure requires a very simple fabrication process which is CMOS compatible.

Prediction and Measurement of Temperature Fields in Silicon-on-Insulator Electronic Circuits

DTIC Science & Technology

1995-08-01

common dimensions are given in Table 1. Almost all of the device power is dissipated in the channel. The electri- cally insulating implanted layer...data. Region or Component substrate Material SOI implanted insulating layers single-crystal silicon, 3 x 1015 boron atoms cm -3 Thermal... implanted silicon-dioxide layer in SOI wafers. The data for each device for varying powers fall near a line originating at P = 0 and T0 = 303 K

A study of vapor-phase deposition of silicon nitride layers by ammonolysis of dichlorosilane at lowered pressure

DOE Office of Scientific and Technical Information (OSTI.GOV)

Manzha, N. M., E-mail: magazine@miee.ru

2010-12-15

Deposition kinetics of silicon nitride layers at lowered reactor pressures of 10-130 Pa and temperatures in the range 973-1073 K has been studied. The equilibrium constant of the bimolecular reaction of dichlorosilane with ammonia has been calculated. The apparent activation energies calculated taking into account the experimental growth rate nearly coincide with the experimental data. Recommendations for improving the quality of silicon nitride layers are made.

Deuterium trapping in the carbon-silicon co-deposition layers prepared by RF sputtering in D2 atmosphere

NASA Astrophysics Data System (ADS)

Zhang, Hongliang; Zhang, Weiyuan; Su, Ranran; Tu, Hanjun; Shi, Liqun; Hu, Jiansheng

2018-04-01

Deuterated carbon-silicon layers co-deposited on graphite and silicon substrates by radio frequency magnetron sputtering in pure D2 plasma were produced to study deuterium trapping and characteristics of the C-Si layers. The C-Si co-deposited layers were examined by ion beam analysis (IBA), Raman spectroscopy (RS), infrared absorption (IR) spectroscopy, thermal desorption spectroscopy (TDS) and scanning electron microscopy (SEM). It was found that the growth rate of the C-Si co-deposition layer decreased with increasing temperature from 350 K to 800 K, the D concentration and C/Si ratios increased differently on graphite and silicon substrates. TDS shows that D desorption is mainly as D2, HD, HDO, CD4, and C2D4 and release peaks occurred at temperatures of less than 900 K. RS and IR analysis reveal that the structure of the C-Si layers became more disordered with increasing temperatures. Rounded areas of peeling with 1-2 μm diameters were observed on the surface.

Proton exchange membrane micro fuel cells on 3D porous silicon gas diffusion layers

NASA Astrophysics Data System (ADS)

Kouassi, S.; Gautier, G.; Thery, J.; Desplobain, S.; Borella, M.; Ventura, L.; Laurent, J.-Y.

2012-10-01

Since the 90's, porous silicon has been studied and implemented in many devices, especially in MEMS technology. In this article, we present a new approach to build miniaturized proton exchange membrane micro-fuel cells using porous silicon as a hydrogen diffusion layer. In particular, we propose an innovative process to build micro fuel cells from a “corrugated iron like” 3D structured porous silicon substrates. This structure is able to increase up to 40% the cell area keeping a constant footprint on the silicon wafer. We propose here a process route to perform electrochemically 3D porous gas diffusion layers and to deposit fuel cell active layers on such substrates. The prototype peak power performance was measured to be 90 mW cm-2 in a “breathing configuration” at room temperature. These performances are less than expected if we compare with a reference 2D micro fuel cell. Actually, the active layer deposition processes are not fully optimized but this prototype demonstrates the feasibility of these 3D devices.

Influence of deposition rate on the structural properties of plasma-enhanced CVD epitaxial silicon.

PubMed

Chen, Wanghua; Cariou, Romain; Hamon, Gwenaëlle; Léal, Ronan; Maurice, Jean-Luc; Cabarrocas, Pere Roca I

2017-03-06

Solar cells based on epitaxial silicon layers as the absorber attract increasing attention because of the potential cost reduction. In this work, we studied the influence of the deposition rate on the structural properties of epitaxial silicon layers produced by plasma-enhanced chemical vapor deposition (epi-PECVD) using silane as a precursor and hydrogen as a carrier gas. We found that the crystalline quality of epi-PECVD layers depends on their thickness and deposition rate. Moreover, increasing the deposition rate may lead to epitaxy breakdown. In that case, we observe the formation of embedded amorphous silicon cones in the epi-PECVD layer. To explain this phenomenon, we develop a model based on the coupling of hydrogen and built-in strain. By optimizing the deposition conditions to avoid epitaxy breakdown, including substrate temperatures and plasma potential, we have been able to synthesize epi-PECVD layers up to a deposition rate of 8.3 Å/s. In such case, we found that the incorporation of hydrogen in the hydrogenated crystalline silicon can reach 4 at. % at a substrate temperature of 350 °C.

Influence of deposition rate on the structural properties of plasma-enhanced CVD epitaxial silicon

PubMed Central

Chen, Wanghua; Cariou, Romain; Hamon, Gwenaëlle; Léal, Ronan; Maurice, Jean-Luc; Cabarrocas, Pere Roca i

2017-01-01

Solar cells based on epitaxial silicon layers as the absorber attract increasing attention because of the potential cost reduction. In this work, we studied the influence of the deposition rate on the structural properties of epitaxial silicon layers produced by plasma-enhanced chemical vapor deposition (epi-PECVD) using silane as a precursor and hydrogen as a carrier gas. We found that the crystalline quality of epi-PECVD layers depends on their thickness and deposition rate. Moreover, increasing the deposition rate may lead to epitaxy breakdown. In that case, we observe the formation of embedded amorphous silicon cones in the epi-PECVD layer. To explain this phenomenon, we develop a model based on the coupling of hydrogen and built-in strain. By optimizing the deposition conditions to avoid epitaxy breakdown, including substrate temperatures and plasma potential, we have been able to synthesize epi-PECVD layers up to a deposition rate of 8.3 Å/s. In such case, we found that the incorporation of hydrogen in the hydrogenated crystalline silicon can reach 4 at. % at a substrate temperature of 350 °C. PMID:28262840

Low-resistivity photon-transparent window attached to photo-sensitive silicon detector

DOEpatents

Holland, Stephen Edward

2000-02-15

The invention comprises a combination of a low resistivity, or electrically conducting, silicon layer that is transparent to long or short wavelength photons and is attached to the backside of a photon-sensitive layer of silicon, such as a silicon wafer or chip. The window is applied to photon sensitive silicon devices such as photodiodes, charge-coupled devices, active pixel sensors, low-energy x-ray sensors and other radiation detectors. The silicon window is applied to the back side of a photosensitive silicon wafer or chip so that photons can illuminate the device from the backside without interference from the circuit printed on the frontside. A voltage sufficient to fully deplete the high-resistivity photosensitive silicon volume of charge carriers is applied between the low-resistivity back window and the front, patterned, side of the device. This allows photon-induced charge created at the backside to reach the front side of the device and to be processed by any circuitry attached to the front side. Using the inventive combination, the photon sensitive silicon layer does not need to be thinned beyond standard fabrication methods in order to achieve full charge-depletion in the silicon volume. In one embodiment, the inventive backside window is applied to high resistivity silicon to allow backside illumination while maintaining charge isolation in CCD pixels.

Method of bonding silver to glass and mirrors produced according to this method

DOEpatents

Pitts, J.R.; Thomas, T.M.; Czanderna, A.W.

1984-07-31

A method for adhering silver to a glass substrate for producing mirrors includes attaining a silicon enriched substrate surface by reducing the oxygen therein in a vacuum and then vacuum depositing a silver layer onto the silicon enriched surface. The silicon enrichment can be attained by electron beam bombardment, ion beam bombardment, or neutral beam bombardment. It can also be attained by depositing a metal, such as aluminum, on the substrate surface, allowing the metal to oxidize by pulling oxygen from the substrate surface, thereby leaving a silicon enriched surface, and then etching or eroding the metal oxide layer away to expose the silicon enriched surface. Ultraviolet rays can be used to maintain dangling silicon bonds on the enriched surface until covalent bonding with the silver can occur. This disclosure also includes encapsulated mirrors with diffusion layers built therein. One of these mirrors is assembled on a polymer substrate.

Method of bonding silver to glass and mirrors produced according to this method

DOEpatents

Pitts, John R.; Thomas, Terence M.; Czanderna, Alvin W.

1985-01-01

A method for adhering silver to a glass substrate for producing mirrors includes attaining a silicon enriched substrate surface by reducing the oxygen therein in a vacuum and then vacuum depositing a silver layer onto the silicon enriched surface. The silicon enrichment can be attained by electron beam bombardment, ion beam bombardment, or neutral beam bombardment. It can also be attained by depositing a metal, such as aluminum, on the substrate surface, allowing the metal to oxidize by pulling oxygen from the substrate surface, thereby leaving a silicon enriched surface, and then etching or eroding the metal oxide layer away to expose the silicon enriched surface. Ultraviolet rays can be used to maintain dangling silicon bonds on the enriched surface until covalent bonding with the silver can occur. This disclosure also includes encapsulated mirrors with diffusion layers built therein. One of these mirrors is assembled on a polymer substrate.

Silicon nitride protective coatings for silvered glass mirrors

DOEpatents

Tracy, C. Edwin; Benson, David K.

1988-01-01

A protective diffusion barrier for metalized mirror structures is provided by a layer or coating of silicon nitride which is a very dense, transparent, dielectric material that is impervious to water, alkali, and other impurities and corrosive substances that typically attack the metal layers of mirrors and cause degradation of the mirrors' reflectivity. The silicon nitride layer can be deposited on the substrate before metal deposition to stabilize the metal/substrate interface, and it can be deposited over the metal to encapsulate it and protect the metal from corrosion or other degradation. Mirrors coated with silicon nitride according to this invention can also be used as front surface mirrors.

Silicon nitride protective coatings for silvered glass mirrors

DOEpatents

Tracy, C.E.; Benson, D.K.

1984-07-20

A protective diffusion barrier for metalized mirror structures is provided by a layer or coating of silicon nitride which is a very dense, transparent, dielectric material that is impervious to water, alkali, and other impurities and corrosive substances that typically attack the metal layers of mirrors and cause degradation of the mirrors' reflectivity. The silicon nitride layer can be deposited on the substrate prior to metal deposition thereon to stabilize the metal/substrate interface, and it can be deposited over the metal to encapsulate it and protect the metal from corrosion or other degradation. Mirrors coated with silicon nitride according to this invention can also be used as front surface mirrors.

Vertical waveguides integrated with silicon photodetectors: Towards high efficiency and low cross-talk image sensors

NASA Astrophysics Data System (ADS)

Tut, Turgut; Dan, Yaping; Duane, Peter; Yu, Young; Wober, Munib; Crozier, Kenneth B.

2012-01-01

We describe the experimental realization of vertical silicon nitride waveguides integrated with silicon photodetectors. The waveguides are embedded in a silicon dioxide layer. Scanning photocurrent microscopy is performed on a device containing a waveguide, and on a device containing the silicon dioxide layer, but without the waveguide. The results confirm the waveguide's ability to guide light onto the photodetector with high efficiency. We anticipate that the use of these structures in image sensors, with one waveguide per pixel, would greatly improve efficiency and significantly reduce inter-pixel crosstalk.

Processes for producing low cost, high efficiency silicon solar cells

DOEpatents

Rohatgi, A.; Doshi, P.; Tate, J.K.; Mejia, J.; Chen, Z.

1998-06-16

Processes which utilize rapid thermal processing (RTP) are provided for inexpensively producing high efficiency silicon solar cells. The RTP processes preserve minority carrier bulk lifetime {tau} and permit selective adjustment of the depth of the diffused regions, including emitter and back surface field (bsf), within the silicon substrate. In a first RTP process, an RTP step is utilized to simultaneously diffuse phosphorus and aluminum into the front and back surfaces, respectively, of a silicon substrate. Moreover, an in situ controlled cooling procedure preserves the carrier bulk lifetime {tau} and permits selective adjustment of the depth of the diffused regions. In a second RTP process, both simultaneous diffusion of the phosphorus and aluminum as well as annealing of the front and back contacts are accomplished during the RTP step. In a third RTP process, the RTP step accomplishes simultaneous diffusion of the phosphorus and aluminum, annealing of the contacts, and annealing of a double-layer antireflection/passivation coating SiN/SiO{sub x}. In a fourth RTP process, the process of applying front and back contacts is broken up into two separate respective steps, which enhances the efficiency of the cells, at a slight time expense. In a fifth RTP process, a second RTP step is utilized to fire and adhere the screen printed or evaporated contacts to the structure. 28 figs.

Neutron radiation tolerance of Au-activated silicon

NASA Technical Reports Server (NTRS)

Joyner, W. T.

1987-01-01

Double injection devices prepared by the introduction of deep traps, using the Au activation method have been found to tolerate gamma irradiation into the Gigarad (Si) region without significant degradation of operating characteristics. Silicon double injection devices, using deep levels creacted by Au diffusion, can tolerate fast neutron irradiation up to 10 to the 15th n/sq cm. Significant parameter degradation occurs at 10 to the 16th n/sq cm. However, since the actual doping of the basic material begins to change as a result of the transmutation of silicon into phosphorus for neutron fluences greater than 10 to the 17th/sq cm, the radiation tolerance of these devices is approaching the limit possible for any device based on initially doped silicon.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Dumpala, Ravikumar; Nano Functional Materials Technology Centre, Department of Physics, Indian Institute of Technology Madras, Chennai 600036; Kumar, N.

Tribo-layer formation and frictional characteristics of the SiC ball were studied with the sliding test against nanocrystalline diamond coating under atmospheric test conditions. Unsteady friction coefficients in the range of 0.04 to 0.1 were observed during the tribo-test. Friction and wear characteristics were found to be influenced by the formation of cohesive tribo-layer (thickness ∼ 1.3 μm) in the wear track of nanocrystalline diamond coating. Hardness of the tribo-layer was measured using nanoindentation technique and low hardness of ∼ 1.2 GPa was observed. The presence of silicon and oxygen in the tribo-layer was noticed by the energy dispersive spectroscopy mappingmore » and the chemical states of the silicon were analyzed using X-ray photoelectron spectroscopy. Large amount of oxygen content in the tribo-layer indicated tribo-oxidation wear mechanism. - Highlights: • Sliding wear and friction characteristics of SiC were studied against NCD coating. • Silicon oxide tribo-layer formation was observed in the NCD coating wear track. • Low hardness 1.2 GPa of tribo-layer was measured using nanoindentation technique. • Chemical states of silicon were analyzed using X-ray photoelectron spectroscopy.« less

Dielectric and transport properties of thin films precipitated from sols with silicon nanoparticles

DOE Office of Scientific and Technical Information (OSTI.GOV)

Kononov, N. N., E-mail: nnk@kapella.gpi.ru; Dorofeev, S. G.; Ishchenko, A. A.

2011-08-15

Dielectric properties of thin films precipitated on solid substrates from colloidal solutions containing silicon nanoparticles (average diameter is 10 nm) are studied by optical ellipsometry and impedance-spectroscopy. In the optical region, the values of real {epsilon} Prime and imaginary {epsilon} Double-Prime components of the complex permittivity {epsilon} vary within 2.1-1.1 and 0.25-0.75, respectively. These values are significantly lower than those of crystalline silicon. Using numerical simulation within the Bruggeman effective medium approximation, we show that the experimental {epsilon} Prime and {epsilon} Double-Prime spectra can be explained with good accuracy, assuming that the silicon film is a porous medium consisting ofmore » silicon monoxide (SiO) and air voids at a void ratio of 0.5. Such behavior of films is mainly caused by the effect of outer shells of silicon nanoparticles interacting with atmospheric oxygen on their dielectric properties. In the frequency range of 10-10{sup 6} Hz, the experimentally measured {epsilon} Prime and {epsilon} Double-Prime spectra of thin nanoscale silicon films are well approximated by the semi-empirical Cole-Cole dielectric dispersion law with the term related to free electric charges. The experimentally determined power-law frequency dependence of the ac conductivity means that the electrical transport in films is controlled by electric charge hopping through localized states in the unordered medium of outer shells of silicon nanoparticles composing films. It is found that the film conductivity at frequencies of {<=}2 Multiplication-Sign 10{sup 2} Hz is controlled by proton transport through Si-OH groups on the silicon nanoparticle surface.« less

Si nanowires/Cu nanowires bilayer fabric as a lithium ion capacitor anode with excellent performance

NASA Astrophysics Data System (ADS)

Lai, Chien-Ming; Kao, Tzu-Lun; Tuan, Hsing-Yu

2018-03-01

A light and binder-free bilayer fabric electrode composed of silicon nanowires and copper nanowires for lithium-ion capacitors (LICs) is reported. A lithium ion capacitor is proposed employing pre-lithiated silicon/copper nanowire fabric and activated carbon as the anode and the cathode, respectively. These LICs show remarkable performance with a specific capacitance of 156 F g-1 at 0.1 A g-1, which is approximately twice of that of activated carbon in electric double-layer capacitors (EDLCs), and still exhibit a fine specific capacitance of 68 F g-1 even at a high current density of 20 A g-1. At a low power density of 193 W kg-1, the Si/Cu fabric//AC LIC can achieve high energy density of 210 W h kg-1. As the power density is increased to 99 kW kg-1, the energy density still remains at 43 W h kg-1, showing the prominent rate performance.

22.7% efficient PERL silicon solar cell module with a textured front surface

DOE Office of Scientific and Technical Information (OSTI.GOV)

Zhao, J.; Wang, A.; Campbell, P.

1997-12-31

This paper describes a solar cell module efficiency of 22.7% independently measured at Sandia National Laboratories. This is the highest ever confirmed efficiency for a photovoltaic module of this size achieved by cells made from any material. This 778-cm{sup 2} module used 40 large-area double layer antireflection coated PERL (passivated emitter, rear locally-diffused) silicon cells of average efficiency of 23.1%. A textured front module surface considerably improve the module efficiency. Also reported is an independently confirmed efficiency of 23.7% for a 21.6 cm{sup 2} cell of the type used in the module. Using these PERL cells in the 1996 Worldmore » Solar Challenge solar car race from Darwin to Adelaide across Australia, Honda`s Dream and Aisin Seiki`s Aisol III were placed first and third, respectively. Honda also set a new record by reaching Adelaide in four days with an average speed of 90km/h over the 3010 km course.« less

Precision calibration of the silicon doping level in gallium arsenide epitaxial layers

NASA Astrophysics Data System (ADS)

Mokhov, D. V.; Berezovskaya, T. N.; Kuzmenkov, A. G.; Maleev, N. A.; Timoshnev, S. N.; Ustinov, V. M.

2017-10-01

An approach to precision calibration of the silicon doping level in gallium arsenide epitaxial layers is discussed that is based on studying the dependence of the carrier density in the test GaAs layer on the silicon- source temperature using the Hall-effect and CV profiling techniques. The parameters are measured by standard or certified measuring techniques and approved measuring instruments. It is demonstrated that the use of CV profiling for controlling the carrier density in the test GaAs layer at the thorough optimization of the measuring procedure ensures the highest accuracy and reliability of doping level calibration in the epitaxial layers with a relative error of no larger than 2.5%.

Designed porosity materials in nuclear reactor components

DOEpatents

Yacout, A. M.; Pellin, Michael J.; Stan, Marius

2016-09-06

A nuclear fuel pellet with a porous substrate, such as a carbon or tungsten aerogel, on which at least one layer of a fuel containing material is deposited via atomic layer deposition, and wherein the layer deposition is controlled to prevent agglomeration of defects. Further, a method of fabricating a nuclear fuel pellet, wherein the method features the steps of selecting a porous substrate, depositing at least one layer of a fuel containing material, and terminating the deposition when the desired porosity is achieved. Also provided is a nuclear reactor fuel cladding made of a porous substrate, such as silicon carbide aerogel or silicon carbide cloth, upon which layers of silicon carbide are deposited.

Surface plasmons based terahertz modulator consisting of silicon-air-metal-dielectric-metal layers

NASA Astrophysics Data System (ADS)

Wang, Wei; Yang, Dongxiao; Qian, Zhenhai

2018-05-01

An optically controlled modulator of the terahertz wave, which is composed of a metal-dielectric-metal structure etched with circular loop arrays on both the metal layers and a photoexcited silicon wafer separated by an air layer, is proposed. Simulation results based on experimentally measured complex permittivities predict that modification of complex permittivity of the silicon wafer through excitation laser leads to a significant tuning of transmission characteristics of the modulator, forming the modulation depths of 59.62% and 96.64% based on localized surface plasmon peak and propagating surface plasmon peak, respectively. The influences of the complex permittivity of the silicon wafer and the thicknesses of both the air layer and the silicon wafer are numerically studied for better understanding the modulation mechanism. This study proposes a feasible methodology to design an optically controlled terahertz modulator with large modulation depth, high speed and suitable insertion loss, which is useful for terahertz applications in the future.

Optimization of silicon oxynitrides by plasma-enhanced chemical vapor deposition for an interferometric biosensor

NASA Astrophysics Data System (ADS)

Choo, Sung Joong; Lee, Byung-Chul; Lee, Sang-Myung; Park, Jung Ho; Shin, Hyun-Joon

2009-09-01

In this paper, silicon oxynitride layers deposited with different plasma-enhanced chemical vapor deposition (PECVD) conditions were fabricated and optimized, in order to make an interferometric sensor for detecting biochemical reactions. For the optimization of PECVD silicon oxynitride layers, the influence of the N2O/SiH4 gas flow ratio was investigated. RF power in the PEVCD process was also adjusted under the optimized N2O/SiH4 gas flow ratio. The optimized silicon oxynitride layer was deposited with 15 W in chamber under 25/150 sccm of N2O/SiH4 gas flow rates. The clad layer was deposited with 20 W in chamber under 400/150 sccm of N2O/SiH4 gas flow condition. An integrated Mach-Zehnder interferometric biosensor based on optical waveguide technology was fabricated under the optimized PECVD conditions. The adsorption reaction between bovine serum albumin (BSA) and the silicon oxynitride surface was performed and verified with this device.

Porous silicon carbide (SIC) semiconductor device

NASA Technical Reports Server (NTRS)

Shor, Joseph S. (Inventor); Kurtz, Anthony D. (Inventor)

1996-01-01

Porous silicon carbide is fabricated according to techniques which result in a significant portion of nanocrystallites within the material in a sub 10 nanometer regime. There is described techniques for passivating porous silicon carbide which result in the fabrication of optoelectronic devices which exhibit brighter blue luminescence and exhibit improved qualities. Based on certain of the techniques described porous silicon carbide is used as a sacrificial layer for the patterning of silicon carbide. Porous silicon carbide is then removed from the bulk substrate by oxidation and other methods. The techniques described employ a two-step process which is used to pattern bulk silicon carbide where selected areas of the wafer are then made porous and then the porous layer is subsequently removed. The process to form porous silicon carbide exhibits dopant selectivity and a two-step etching procedure is implemented for silicon carbide multilayers.

Method for fabricating an ultra-low expansion mask blank having a crystalline silicon layer

DOEpatents

Cardinale, Gregory F.

2002-01-01

A method for fabricating masks for extreme ultraviolet lithography (EUVL) using Ultra-Low Expansion (ULE) substrates and crystalline silicon. ULE substrates are required for the necessary thermal management in EUVL mask blanks, and defect detection and classification have been obtained using crystalline silicon substrate materials. Thus, this method provides the advantages for both the ULE substrate and the crystalline silicon in an Extreme Ultra-Violet (EUV) mask blank. The method is carried out by bonding a crystalline silicon wafer or member to a ULE wafer or substrate and thinning the silicon to produce a 5-10 .mu.m thick crystalline silicon layer on the surface of the ULE substrate. The thinning of the crystalline silicon may be carried out, for example, by chemical mechanical polishing and if necessary or desired, oxidizing the silicon followed by etching to the desired thickness of the silicon.

Crystallization of amorphous silicon thin films deposited by PECVD on nickel-metalized porous silicon.

PubMed

Ben Slama, Sonia; Hajji, Messaoud; Ezzaouia, Hatem

2012-08-17

Porous silicon layers were elaborated by electrochemical etching of heavily doped p-type silicon substrates. Metallization of porous silicon was carried out by immersion of substrates in diluted aqueous solution of nickel. Amorphous silicon thin films were deposited by plasma-enhanced chemical vapor deposition on metalized porous layers. Deposited amorphous thin films were crystallized under vacuum at 750°C. Obtained results from structural, optical, and electrical characterizations show that thermal annealing of amorphous silicon deposited on Ni-metalized porous silicon leads to an enhancement in the crystalline quality and physical properties of the silicon thin films. The improvement in the quality of the film is due to the crystallization of the amorphous film during annealing. This simple and easy method can be used to produce silicon thin films with high quality suitable for thin film solar cell applications.

Crystallization of amorphous silicon thin films deposited by PECVD on nickel-metalized porous silicon

PubMed Central

2012-01-01

Porous silicon layers were elaborated by electrochemical etching of heavily doped p-type silicon substrates. Metallization of porous silicon was carried out by immersion of substrates in diluted aqueous solution of nickel. Amorphous silicon thin films were deposited by plasma-enhanced chemical vapor deposition on metalized porous layers. Deposited amorphous thin films were crystallized under vacuum at 750°C. Obtained results from structural, optical, and electrical characterizations show that thermal annealing of amorphous silicon deposited on Ni-metalized porous silicon leads to an enhancement in the crystalline quality and physical properties of the silicon thin films. The improvement in the quality of the film is due to the crystallization of the amorphous film during annealing. This simple and easy method can be used to produce silicon thin films with high quality suitable for thin film solar cell applications. PMID:22901341

Porous silicon-based direct hydrogen sulphide fuel cells.

PubMed

Dzhafarov, T D; Yuksel, S Aydin

2011-10-01

In this paper, the use of Au/porous silicon/Silicon Schottky type structure, as a direct hydrogen sulphide fuel cell is demonstrated. The porous silicon filled with hydrochlorid acid was developed as a proton conduction membrane. The Au/Porous Silicon/Silicon cells were fabricated by first creating the porous silicon layer in single-crystalline Si using the anodic etching under illumination and then deposition Au catalyst layer onto the porous silicon. Using 80 mM H2S solution as fuel the open circuit voltage of 0.4 V was obtained and maximum power density of 30 W/m2 at room temperature was achieved. These results demonstrate that the Au/Porous Silicon/Silicon direct hydrogen sulphide fuel cell which uses H2S:dH2O solution as fuel and operates at room temperature can be considered as the most promising type of low cost fuel cell for small power-supply units.

Integrated circuit with dissipative layer for photogenerated carriers

DOEpatents

Myers, D.R.

1988-04-20

The sensitivity of an integrated circuit to single-event upsets is decreased by providing a dissipative layer of silicon nitride between a silicon substrate and the active device. Free carriers generated in the substrate are dissipated by the layer before they can build up charge on the active device. 1 fig.

Toward maximum transmittance into absorption layers in solar cells: investigation of lossy-film-induced mismatches between reflectance and transmittance extrema.

PubMed

Chang, Yin-Jung; Lai, Chi-Sheng

2013-09-01

The mismatch in film thickness and incident angle between reflectance and transmittance extrema due to the presence of lossy film(s) is investigated toward the maximum transmittance design in the active region of solar cells. Using a planar air/lossy film/silicon double-interface geometry illustrates important and quite opposite mismatch behaviors associated with TE and TM waves. In a typical thin-film CIGS solar cell, mismatches contributed by TM waves in general dominate. The angular mismatch is at least 10° in about 37%-53% of the spectrum, depending on the thickness combination of all lossy interlayers. The largest thickness mismatch of a specific interlayer generally increases with the thickness of the layer itself. Antireflection coating designs for solar cells should therefore be optimized in terms of the maximum transmittance into the active region, even if the corresponding reflectance is not at its minimum.

SEMICONDUCTOR TECHNOLOGY Development of spin-on-glass process for triple metal interconnects

NASA Astrophysics Data System (ADS)

Li, Peng; Wenbin, Zhao; Guozhang, Wang; Zongguang, Yu

2010-12-01

Spin-on-glass (SOG), an interlayer dielectric material applied in liquid form to fill narrow gaps in the sub-dielectric surface and thus conducive to planarization, is an alternative to silicon dioxide (SiO2) deposited using PECVD processes. However, its inability to adhere to metal and problems such as cracking prevent the easy application of SOG technology to provide an interlayer dielectric in multilevel metal interconnect circuits, particularly in university processing labs. This paper will show that a thin layer of CVD SiO2 and a curing temperature below the sintering temperature of the metal interconnect layer will promote adhesion, reduce gaps, and prevent cracking. Electron scanning microscope analysis has been used to demonstrate the success of the improved technique. This optimized process has been used in batches of double-poly, triple-metal CMOS wafer fabrication to date.

Charge-coupled device for low background observations

NASA Technical Reports Server (NTRS)

Loh, Edwin D. (Inventor); Cheng, Edward S. (Inventor)

2002-01-01

A charge-coupled device with a low-emissivity metal layer located between a sensing layer and a substrate provides reduction in ghost images. In a typical charge-coupled device of a silicon sensing layer, a silicon dioxide insulating layer, with a glass substrate and a metal carrier layer, a near-infrared photon, not absorbed in the first pass, enters the glass substrate, reflects from the metal carrier, thereby returning far from the original pixel in its entry path. The placement of a low-emissivity metal layer between the glass substrate and the sensing layer reflects near infrared photons before they reach the substrate so that they may be absorbed in the silicon nearer the pixel of their points of entry so that the reflected ghost image is coincident with the primary image for a sharper, brighter image.

Research on liquid impact forming technology of double-layered tubes

NASA Astrophysics Data System (ADS)

Sun, Changying; Liu, Jianwei; Yao, Xinqi; Huang, Beixing; Li, Yuhan

2018-03-01

A double-layered tube is widely used and developed in various fields because of its perfect comprehensive performance and design. With the advent of the era of a double-layered tube, the requirements for double layered tube forming quality, manufacturing cost and forming efficiency are getting higher, so forming methods of a double-layered tube are emerged in an endless stream, the forming methods of a double-layered tube have a great potential in the future. The liquid impact forming technology is a combination of stamping technology and hydroforming technology. Forming a double-layered tube has huge advantages in production cost, quality and efficiency.

Liquid-phase-deposited siloxane-based capping layers for silicon solar cells

DOE Office of Scientific and Technical Information (OSTI.GOV)

Veith-Wolf, Boris; Wang, Jianhui; Hannu-Kuure, Milja

2015-02-02

We apply non-vacuum processing to deposit dielectric capping layers on top of ultrathin atomic-layer-deposited aluminum oxide (AlO{sub x}) films, used for the rear surface passivation of high-efficiency crystalline silicon solar cells. We examine various siloxane-based liquid-phase-deposited (LPD) materials. Our optimized AlO{sub x}/LPD stacks show an excellent thermal and chemical stability against aluminum metal paste, as demonstrated by measured surface recombination velocities below 10 cm/s on 1.3 Ωcm p-type silicon wafers after firing in a belt-line furnace with screen-printed aluminum paste on top. Implementation of the optimized LPD layers into an industrial-type screen-printing solar cell process results in energy conversion efficiencies ofmore » up to 19.8% on p-type Czochralski silicon.« less

Langmuir probe measurements of double-layers in a pulsed discharge

NASA Technical Reports Server (NTRS)

Levine, J. S.; Crawford, F. W.

1980-01-01

Langmuir probe measurements were carried out which confirm the occurrence of double-layers in an argon positive column. Pulsing the discharge current permitted probe measurements to be performed in the presence of the double-layer. Supplementary evidence, obtained from DC and pulsed discharges, indicated that the double-layers formed in the two modes of operation were similar. The double-layers observed were weak and stable; their relation to other classes of double-layers are discussed, and directions for future work are suggested.

Microstructure evolution of the Ir-inserted Ni silicides with additional annealing

NASA Astrophysics Data System (ADS)

Yoon, Kijeong; Song, Ohsung

2009-02-01

Thermally-evaporated 10 nm-Ni/1 nm-Ir/(poly)Si structures were fabricated in order to investigate the thermal stability of Ir-inserted nickel silicide after additional annealing. The silicide samples underwent rapid thermal annealing at 300 ° C to 1200 ° C for 40 s, followed by 30 min annealing at the given RTA temperatures. Silicides suitable for the salicide process were formed on the top of the single crystal and polycrystalline silicon substrates, mimicking actives and gates. The sheet resistance was measured using a four-point probe. High resolution x-ray diffraction and Auger depth profiling were used for phase and chemical composition analysis, respectively. Transmission electron microscope and scanning probe microscope were used to determine the cross-section structure and surface roughness. The silicide, which formed on single crystal silicon substrate with surface agglomeration after additional annealing, could defer the transformation of Ni(Ir)Si to Ni(Ir)Si2 and was stable at temperatures up to 1200 °C. Moreover, the silicide thickness doubled. There were no outstanding changes in the silicide thickness on polycrystalline silicon. However, after additional annealing, the silicon-silicide mixing became serious and showed high resistance at temperatures >700 °C. Auger depth profiling confirmed the increased thickness of the silicide layers after additional annealing without a change in composition. For a single crystal silicon substrate, the sheet resistance increased slightly due to the significant increases in surface roughness caused by surface agglomeration after additional annealing. Otherwise, there were almost no changes in surface roughness on the polycrystalline silicon substrate. The Ir-inserted nickel monosilicide was able to maintain a low resistance in a wide temperature range and is considered suitable for the nano-thick silicide process.

Self assembly of magnetic nanoparticles at silicon surfaces.

PubMed

Theis-Bröhl, Katharina; Gutfreund, Philipp; Vorobiev, Alexei; Wolff, Max; Toperverg, Boris P; Dura, Joseph A; Borchers, Julie A

2015-06-21

Neutron reflectometry was used to study the assembly of magnetite nanoparticles in a water-based ferrofluid close to a silicon surface. Under three conditions, static, under shear and with a magnetic field, the depth profile is extracted. The particles have an average diameter of 11 nm and a volume density of 5% in a D2O-H2O mixture. They are surrounded by a 4 nm thick bilayer of carboxylic acid for steric repulsion. The reflectivity data were fitted to a model using a least square routine based on the Parratt formalism. From the scattering length density depth profiles the following behavior is concluded: the fits indicate that excess carboxylic acid covers the silicon surface and almost eliminates the water in the densely packed wetting layer that forms close to the silicon surface. Under constant shear the wetting layer persists but a depletion layer forms between the wetting layer and the moving ferrofluid. Once the flow is stopped, the wetting layer becomes more pronounced with dense packing and is accompanied by a looser packed second layer. In the case of an applied magnetic field the prolate particles experience a torque and align with their long axes along the silicon surface which leads to a higher particle density.

Silicon-gate CMOS/SOS processing

NASA Technical Reports Server (NTRS)

Ramondetta, P.

1979-01-01

Major silicon-gate CMOS/SOS processes are described. Sapphire substrate preparation is also discussed, as well as the following process variations: (1) the double epi process; and (2) ion implantation.

Broadband wavelength conversion in hydrogenated amorphous silicon waveguide with silicon nitride layer

NASA Astrophysics Data System (ADS)

Wang, Jiang; Li, Yongfang; Wang, Zhaolu; Han, Jing; Huang, Nan; Liu, Hongjun

2018-01-01

Broadband wavelength conversion based on degenerate four-wave mixing is theoretically investigated in a hydrogenated amorphous silicon (a-Si:H) waveguide with silicon nitride inter-cladding layer (a-Si:HN). We have found that enhancement of the non-linear effect of a-Si:H waveguide nitride intermediate layer facilitates broadband wavelength conversion. Conversion bandwidth of 490 nm and conversion efficiency of 11.4 dB were achieved in a numerical simulation of a 4 mm-long a-Si:HN waveguide under 1.55 μm continuous wave pumping. This broadband continuous-wave wavelength converter has potential applications in photonic networks, a type of readily manufactured low-cost highly integrated optical circuits.

Quantitative determination of the clustered silicon concentration in substoichiometric silicon oxide layer

DOE Office of Scientific and Technical Information (OSTI.GOV)

Spinella, Corrado; Bongiorno, Corrado; Nicotra, Giuseppe

2005-07-25

We present an analytical methodology, based on electron energy loss spectroscopy (EELS) and energy-filtered transmission electron microscopy, which allows us to quantify the clustered silicon concentration in annealed substoichiometric silicon oxide layers, deposited by plasma-enhanced chemical vapor deposition. The clustered Si volume fraction was deduced from a fit to the experimental EELS spectrum using a theoretical description proposed to calculate the dielectric function of a system of spherical particles of equal radii, located at random in a host material. The methodology allowed us to demonstrate that the clustered Si concentration is only one half of the excess Si concentration dissolvedmore » in the layer.« less

Silicon-nitride and metal composite

DOEpatents

Landingham, R.L.; Huffsmith, S.A.

A composite and a method for bonding the composite are described. The composite includes a ceramic portion of silicon nitride, a refractory metal portion and a layer of MoSi/sub 2/ indirectly bonding the composite together. The method includes contacting the layer of MoSi/sub 2/ with a surface of the silicon nitride and with a surface of the metal; heating the layer to a temperature below 1400/sup 0/C; and, simultaneously, compressing the layer such that the contacting is with a pressure of at least 30 MPa. This composite overcomes useful life problems in the fabrication of parts for a helical expander for use in power generation.

Silicon-nitride and metal composite

DOEpatents

Landingham, Richard L.; Huffsmith, Sarah A.

1981-01-01

A composite and a method for bonding the composite. The composite includes a ceramic portion of silicon nitride, a refractory metal portion and a layer of MoSi.sub.2 indirectly bonding the composite together. The method includes contacting the layer of MoSi.sub.2 with a surface of the silicon nitride and with a surface of the metal; heating the layer to a temperature below 1400.degree. C.; and, simultaneously with the heating, compressing the layer such that the contacting is with a pressure of at least 30 MPa. This composite overcomes useful life problems in the fabrication of parts for a helical expander for use in power generation.

Polysilicon photoconductor for integrated circuits

DOEpatents

Hammond, Robert B.; Bowman, Douglas R.

1989-01-01

A photoconductive element of polycrystalline silicon is provided with intrinsic response time which does not limit overall circuit response. An undoped polycrystalline silicon layer is deposited by LPCVD to a selected thickness on silicon dioxide. The deposited polycrystalline silicon is then annealed at a selected temperature and for a time effective to obtain crystal sizes effective to produce an enhanced current output. The annealed polycrystalline layer is subsequently exposed and damaged by ion implantation to a damage factor effective to obtain a fast photoconductive response.

Polysilicon photoconductor for integrated circuits

DOEpatents

Hammond, Robert B.; Bowman, Douglas R.

1990-01-01

A photoconductive element of polycrystalline silicon is provided with intrinsic response time which does not limit overall circuit response. An undoped polycrystalline silicon layer is deposited by LPCVD to a selected thickness on silicon dioxide. The deposited polycrystalline silicon is then annealed at a selected temperature and for a time effective to obtain crystal sizes effective to produce an enhanced current output. The annealed polycrystalline layer is subsequently exposed and damaged by ion implantation to a damage factor effective to obtain a fast photoconductive response.

Interaction between antimony atoms and micropores in silicon

NASA Astrophysics Data System (ADS)

Odzhaev, V. B.; Petlitskii, A. N.; Plebanovich, V. I.; Sadovskii, P. K.; Tarasik, M. I.; Chelyadinskii, A. R.

2018-01-01

The interaction between Sb atoms and micropores of a getter layer in silicon is studied. The getter layer was obtained via implantation of Sb+ ions into silicon and subsequent heat treatment processes. The antimony atoms located in the vicinity of micropores are captured by micropores during gettering annealing and lose its electrical activity. The activation energy of capture process to the pores for antimony is lower than that of antimony diffusion in silicon deformation fields around microvoids on the diffusion process.

Polysilicon photoconductor for integrated circuits

DOEpatents

Hammond, R.B.; Bowman, D.R.

1989-04-11

A photoconductive element of polycrystalline silicon is provided with intrinsic response time which does not limit overall circuit response. An undoped polycrystalline silicon layer is deposited by LPCVD to a selected thickness on silicon dioxide. The deposited polycrystalline silicon is then annealed at a selected temperature and for a time effective to obtain crystal sizes effective to produce an enhanced current output. The annealed polycrystalline layer is subsequently exposed and damaged by ion implantation to a damage factor effective to obtain a fast photoconductive response. 6 figs.

Hybrid emitter all back contact solar cell

DOEpatents

Loscutoff, Paul; Rim, Seung

2016-04-12

An all back contact solar cell has a hybrid emitter design. The solar cell has a thin dielectric layer formed on a backside surface of a single crystalline silicon substrate. One emitter of the solar cell is made of doped polycrystalline silicon that is formed on the thin dielectric layer. The other emitter of the solar cell is formed in the single crystalline silicon substrate and is made of doped single crystalline silicon. The solar cell includes contact holes that allow metal contacts to connect to corresponding emitters.

pH-sensitive ion-selective field-effect transistor with zirconium dioxide film

DOE Office of Scientific and Technical Information (OSTI.GOV)

Vlasov, Yu.G.; Bratov, A.V.; Tarantov, Yu.A.

1988-09-20

Miniature semiconductor pH sensors for liquid media, i.e., ion-selective field-effect transistors (ISFETs), are silicon field-effect transistors with a two-layer dielectric consisting of a passivating SiO/sub 2/ layer adjoining the silicon and a layer of pH-sensitive material in contact with the electrolyte solution to be tested. This study was devoted to the characteristics of pH-sensitive ISFETs with ZrO/sub 2/ films. The base was p-type silicon (KDB-10) with a (100) surface orientation. A ZrO/sub 2/ layer 10-50 nm thick was applied over the SiO/sub 2/ layer by electron-beam deposition. The measurements were made in aqueous KNO/sub 3/ or KCl solutions.

Polyimide-based intracortical neural implant with improved structural stiffness

NASA Astrophysics Data System (ADS)

Lee, Kee-Keun; He, Jiping; Singh, Amarjit; Massia, Stephen; Ehteshami, Gholamreza; Kim, Bruce; Raupp, Gregory

2004-01-01

A novel structure for chronically implantable cortical electrodes using polyimide bio-polymer was devised, which provides both flexibility for micro-motion compliance between brain tissues and the skull and at the brain/implant interface and stiffness for better surgical handling. A 5-10 µm thick silicon backbone layer was attached to the tip of the electrode to enhance the structural stiffness. This stiff segment was then followed by a 1 mm flexible segment without a silicon backbone layer. The fabricated implants have tri-shanks with five recording sites (20 µm × 20 µm) and two vias of 40 µm × 40 µm on each shank. In vitro cytotoxicity tests of prototype implants revealed no adverse toxic effects on cells. Bench test impedance values were assessed, resulting in an average impedance value of ~2 MOmega at 1 KHz. For a 5 µm thick silicon backbone electrode, the stiffness of polyimide-based electrodes was increased ten times over that of electrodes without the silicon backbone layer. Furthermore, polyimide-based electrodes with 5 µm and 10 µm thick silicon backbone layer penetrated pia of rat brain without buckling that has been observed in implants without silicon reinforcement.

Asymmetric band offsets in silicon heterojunction solar cells: Impact on device performance

DOE Office of Scientific and Technical Information (OSTI.GOV)

Seif, Johannes Peter, E-mail: johannes.seif@alumni.epfl.ch; Ballif, Christophe; De Wolf, Stefaan

Amorphous/crystalline silicon interfaces feature considerably larger valence than conduction band offsets. In this article, we analyze the impact of such band offset asymmetry on the performance of silicon heterojunction solar cells. To this end, we use silicon suboxides as passivation layers—inserted between substrate and (front or rear) contacts—since such layers enable intentionally exacerbated band-offset asymmetry. Investigating all topologically possible passivation layer permutations and focussing on light and dark current-voltage characteristics, we confirm that to avoid fill factor losses, wider-bandgap silicon oxide films (of at least several nanometer thin) should be avoided in hole-collecting contacts. As a consequence, device implementation ofmore » such films as window layers—without degraded carrier collection—demands electron collection at the front and hole collection at the rear. Furthermore, at elevated operating temperatures, once possible carrier transport barriers are overcome by thermionic (field) emission, the device performance is mainly dictated by the passivation of its surfaces. In this context, compared to the standard amorphous silicon layers, the wide-bandgap oxide layers applied here passivate remarkably better at these temperatures, which may represent an additional benefit under practical operation conditions.« less

Double stenting with silicone and metallic stents for malignant airway stenosis.

PubMed

Matsumoto, Keitaro; Yamasaki, Naoya; Tsuchiya, Tomoshi; Miyazaki, Takuro; Kamohara, Ryotaro; Hatachi, Go; Nagayasu, Takeshi

2017-08-01

For severe malignant airway stenosis, there are several types of commercially available airway stents, and each has its own advantages and disadvantages. We herein describe the safety and efficacy of combination stenting with silicone and metallic stents for patients with extended malignant airway stenosis. Seven patients with malignant airway stenosis were treated via combination stenting with a silicone stent and a metallic stent for extended airway stenosis from the central to peripheral airways. Five patients were diagnosed with advanced esophageal cancer, two of whom had tracheoesophageal fistulas. One patient had adenoid cystic carcinoma, and another had mediastinal tumor. There were no specific complications related to the double stenting. Combination stenting with silicone and metallic stents proved to be a safe option for patients with severe, extended, and complicated malignant airway stenosis.

Method of fabricating porous silicon carbide (SiC)

NASA Technical Reports Server (NTRS)

Shor, Joseph S. (Inventor); Kurtz, Anthony D. (Inventor)

1995-01-01

Porous silicon carbide is fabricated according to techniques which result in a significant portion of nanocrystallites within the material in a sub 10 nanometer regime. There is described techniques for passivating porous silicon carbide which result in the fabrication of optoelectronic devices which exhibit brighter blue luminescence and exhibit improved qualities. Based on certain of the techniques described porous silicon carbide is used as a sacrificial layer for the patterning of silicon carbide. Porous silicon carbide is then removed from the bulk substrate by oxidation and other methods. The techniques described employ a two-step process which is used to pattern bulk silicon carbide where selected areas of the wafer are then made porous and then the porous layer is subsequently removed. The process to form porous silicon carbide exhibits dopant selectivity and a two-step etching procedure is implemented for silicon carbide multilayers.

Silicon based multilayer photoelectrodes for photoelectrolysis of water to produce hydrogen from the sun

NASA Astrophysics Data System (ADS)

Faruque, Faisal

The main objective of this work is to study different materials for the direct photosynthesis of hydrogen from water. A variety of photocatalysts such as titanium dioxide, titanium oxy-nitride, silicon carbide, and gallium nitride are being investigated by others for the clean production of hydrogen for fuel cells and hydrogen economy. Our approach was to deposit suitable metallic regions on photocatalyst nanoparticles to direct the efficient synthesis of hydrogen to a particular site for convenient collection. We studied different electrode metals such as gold, platinum, titanium, palladium, and tungsten. We also studied different solar cell materials such as silicon (p- and n-types), silicon carbide and titanium dioxide semiconductors in order to efficiently generate electrons under illumination. We introduced a novel silicon-based multilayer photosynthesis device to take advantage of suitable properties of silicon and tungsten to efficiently produce hydrogen. The device consisted of a silicon (0.5mm) substrate, a deposited atomic layer of Al2O 3 (1nm), a doped polysilicon (0.1microm), and finally a tungsten nanoporous (5-10nm) layer acting as an interface electrode with water. The Al2O 3 layer was introduced to reduce leakage current and to prevent the spreading of the diffused p-n junction layer between the silicon and doped polysilicon layers. The surface of the photoelectrode was coated with nanotextured tungsten nanopores (TNP), which increased the surface area of the electrodes to the electrolyte, assisting in electron-hole mobility, and acting as a photocatalyst. The reported device exhibited a fill factor (%FF) of 27.22% and solar-to-hydrogen conversion efficiency of 0.03174%. This thesis describes the structures of the device, and offers a characterization and comparison between different photoelectrodes.

High-aspect ratio zone plate fabrication for hard x-ray nanoimaging

NASA Astrophysics Data System (ADS)

Parfeniukas, Karolis; Giakoumidis, Stylianos; Akan, Rabia; Vogt, Ulrich

2017-08-01

We present our results in fabricating Fresnel zone plate optics for the NanoMAX beamline at the fourth-generation synchrotron radiation facility MAX IV, to be used in the energy range of 6-10 keV. The results and challenges of tungsten nanofabrication are discussed, and an alternative approach using metal-assisted chemical etching (MACE) of silicon is showcased. We successfully manufactured diffraction-limited zone plates in tungsten with 30 nm outermost zone width and an aspect ratio of 21:1. These optics were used for nanoimaging experiments at NanoMAX. However, we found it challenging to further improve resolution and diffraction efficiency using tungsten. High efficiency is desirable to fully utilize the advantage of increased coherence on the optics at MAX IV. Therefore, we started to investigate MACE of silicon for the nanofabrication of high-resolution and high-efficiency zone plates. The first type of structures we propose use the silicon directly as the phase-shifting material. We have achieved 6 μm deep dense vertical structures with 100 nm linewidth. The second type of optics use iridium as the phase material. The structures in the silicon substrate act as a mold for iridium coating via atomic layer deposition (ALD). A semi-dense pattern is used with line-to-space ratio of 1:3 for a so-called frequency-doubled zone plate. This way, it is possible to produce smaller structures with the tradeoff of the additional ALD step. We have fabricated 45 nm-wide and 3.6 μm-tall silicon/iridium structures.

Double layers and circuits in astrophysics

NASA Technical Reports Server (NTRS)

Alfven, Hannes

1986-01-01

As the rate of energy release in a double layer with voltage delta V is P approx I delta V, a double layer must be treated as a part of a circuit which delivers the current I. As neither double layer nor circuit can be derived from magnetofluid models of a plasma, such models are useless for treating energy transfer by means of double layers. They must be replaced by particle models and circuit theory. A simple circuit is suggested which is applied to the energizing of auroral particles, to solar flares, and to intergalactic double radio sources. Application to the heliospheric current systems leads to the prediction of two double layers on the Sun's axis which may give radiations detectable from Earth. Double layers in space should be classified as a new type of celestial object (one example is the double radio sources). It is tentatively suggested in X-ray and Gamma-ray bursts may be due to exploding double layers (although annihilation is an alternative energy source). A study of how a number of the most used textbooks in astrophysics treat important concepts like double layers, critical velocity, pinch effects and circuits is made.

Technology of an adhesive silicone film as drug carrier in transdermal therapy. I: Analytical methods used for characterization and design of the universal elastomer layers.

PubMed

Mojsiewicz-Pieńkowska, Krystyna; Jamrógiewicz, Marzena; Zebrowska, Maria; Sznitowska, Małgorzata; Centkowska, Katarzyna

2011-08-25

Silicone polymers possess unique properties, which make them suitable for many different applications, for example in the pharmaceutical and medical industry. To create an adhesive silicone film, the appropriate silicone components have to be chosen first. From these components two layers were made: an adhesive elastomer applied on the skin, and a non-adhesive elastomer on the other side of the film. The aim of this study was to identify a set of analytical methods that can be used for detailed characterization of the elastomer layers, as needed when designing new silicone films. More specifically, the following methods were combined to detailed identification of the silicone components: Fourier transform infrared spectroscopy (FTIR), proton nuclear magnetic resonance (¹H NMR) and size exclusion chromatography with evaporative light scattering detector (SEC-ELSD). It was demonstrated that these methods together with a rheological analysis are suitable for controlling the cross-linking reaction, thus obtaining the desired properties of the silicone film. Adhesive silicone films can be used as universal materials for medical use, particularly for effective treatment of scars and keloids or as drug carriers in transdermal therapy.

Rippled area formed by surface plasmon polaritons upon femtosecond laser double-pulse irradiation of silicon.

PubMed

Derrien, Thibault J-Y; Krüger, Jörg; Itina, Tatiana E; Höhm, Sandra; Rosenfeld, Arkadi; Bonse, Jörn

2013-12-02

The formation of near-wavelength laser-induced periodic surface structures (LIPSS) on silicon upon irradiation with sequences of Ti:sapphire femtosecond laser pulse pairs (pulse duration 150 fs, central wavelength 800 nm) is studied theoretically. For this purpose, the nonlinear generation of conduction band electrons in silicon and their relaxation is numerically calculated using a two-temperature model approach including intrapulse changes of optical properties, transport, diffusion and recombination effects. Following the idea that surface plasmon polaritons (SPP) can be excited when the material turns from semiconducting to metallic state, the "SPP active area" is calculated as function of fluence and double-pulse delay up to several picoseconds and compared to the experimentally observed rippled surface areas. Evidence is presented that multi-photon absorption explains the large increase of the rippled area for temporally overlapping pulses. For longer double-pulse delays, relevant relaxation processes are identified. The results demonstrate that femtosecond LIPSS on silicon are caused by the excitation of SPP and can be controlled by temporal pulse shaping.

Suppression of interfacial voids formation during silane (SiH4)-based silicon oxide bonding with a thin silicon nitride capping layer

NASA Astrophysics Data System (ADS)

Lee, Kwang Hong; Bao, Shuyu; Wang, Yue; Fitzgerald, Eugene A.; Seng Tan, Chuan

2018-01-01

The material properties and bonding behavior of silane-based silicon oxide layers deposited by plasma-enhanced chemical vapor deposition were investigated. Fourier transform infrared spectroscopy was employed to determine the chemical composition of the silicon oxide films. The incorporation of hydroxyl (-OH) groups and moisture absorption demonstrates a strong correlation with the storage duration for both as-deposited and annealed silicon oxide films. It is observed that moisture absorption is prevalent in the silane-based silicon oxide film due to its porous nature. The incorporation of -OH groups and moisture absorption in the silicon oxide films increase with the storage time (even in clean-room environments) for both as-deposited and annealed silicon oxide films. Due to silanol condensation and silicon oxidation reactions that take place at the bonding interface and in the bulk silicon, hydrogen (a byproduct of these reactions) is released and diffused towards the bonding interface. The trapped hydrogen forms voids over time. Additionally, the absorbed moisture could evaporate during the post-bond annealing of the bonded wafer pair. As a consequence, defects, such as voids, form at the bonding interface. To address the problem, a thin silicon nitride capping film was deposited on the silicon oxide layer before bonding to serve as a diffusion barrier to prevent moisture absorption and incorporation of -OH groups from the ambient. This process results in defect-free bonded wafers.

Microstructures of BN/SiC coatings on nicalon fibers

NASA Technical Reports Server (NTRS)

Dickerson, R. M.; Singh, M.

1995-01-01

The microstructures of Nicalon silicon carbide (SiC) fibers and layered coatings of boron nitride (BN) followed by chemical vapor infiltrated silicon carbide (CVI-SiC) were characterized using optical and electron microscopy. Two different precursors and reactions were used to produce the BN layers while the deposition of CVI silicon carbide was nearly identical. Coated tows were examined in cross-section to characterize the chemistry and structures of the constituents and the interfaces. One BN precursor yielded three sublayers while the other gave a relatively homogeneous nanocrystalline layer.

Sensitivity Enhancement of Transition Metal Dichalcogenides/Silicon Nanostructure-based Surface Plasmon Resonance Biosensor

PubMed Central

Ouyang, Qingling; Zeng, Shuwen; Jiang, Li; Hong, Liying; Xu, Gaixia; Dinh, Xuan-Quyen; Qian, Jun; He, Sailing; Qu, Junle; Coquet, Philippe; Yong, Ken-Tye

2016-01-01

In this work, we designed a sensitivity-enhanced surface plasmon resonance biosensor structure based on silicon nanosheet and two-dimensional transition metal dichalcogenides. This configuration contains six components: SF10 triangular prism, gold thin film, silicon nanosheet, two-dimensional MoS2/MoSe2/WS2/WSe2 (defined as MX2) layers, biomolecular analyte layer and sensing medium. The minimum reflectivity, sensitivity as well as the Full Width at Half Maximum of SPR curve are systematically examined by using Fresnel equations and the transfer matrix method in the visible and near infrared wavelength range (600 nm to 1024 nm). The variation of the minimum reflectivity and the change in resonance angle as the function of the number of MX2 layers are presented respectively. The results show that silicon nanosheet and MX2 layers can be served as effective light absorption medium. Under resonance conditions, the electrons in these additional dielectric layers can be transferred to the surface of gold thin film. All silicon-MX2 enhanced sensing models show much better performance than that of the conventional sensing scheme where pure Au thin film is used, the highest sensitivity can be achieved by employing 600 nm excitation light wavelength with 35 nm gold thin film and 7 nm thickness silicon nanosheet coated with monolayer WS2. PMID:27305974

Heavily Boron-Doped Silicon Layer for the Fabrication of Nanoscale Thermoelectric Devices

PubMed Central

Liu, Yang; Deng, Lingxiao; Zhang, Mingliang; Zhang, Shuyuan; Ma, Jing; Song, Peishuai; Liu, Qing; Ji, An; Yang, Fuhua; Wang, Xiaodong

2018-01-01

Heavily boron-doped silicon layers and boron etch-stop techniques have been widely used in the fabrication of microelectromechanical systems (MEMS). This paper provides an introduction to the fabrication process of nanoscale silicon thermoelectric devices. Low-dimensional structures such as silicon nanowire (SiNW) have been considered as a promising alternative for thermoelectric applications in order to achieve a higher thermoelectric figure of merit (ZT) than bulk silicon. Here, heavily boron-doped silicon layers and boron etch-stop processes for the fabrication of suspended SiNWs will be discussed in detail, including boron diffusion, electron beam lithography, inductively coupled plasma (ICP) etching and tetramethylammonium hydroxide (TMAH) etch-stop processes. A 7 μm long nanowire structure with a height of 280 nm and a width of 55 nm was achieved, indicating that the proposed technique is useful for nanoscale fabrication. Furthermore, a SiNW thermoelectric device has also been demonstrated, and its performance shows an obvious reduction in thermal conductivity. PMID:29385759

Trends in heteroepitaxy of III-Vs on silicon for photonic and photovoltaic applications

NASA Astrophysics Data System (ADS)

Lourdudoss, Sebastian; Junesand, Carl; Kataria, Himanshu; Metaferia, Wondwosen; Omanakuttan, Giriprasanth; Sun, Yan-Ting; Wang, Zhechao; Olsson, Fredrik

2017-02-01

We present and compare the existing methods of heteroepitaxy of III-Vs on silicon and their trends. We focus on the epitaxial lateral overgrowth (ELOG) method as a means of achieving good quality III-Vs on silicon. Initially conducted primarily by near-equilibrium epitaxial methods such as liquid phase epitaxy and hydride vapour phase epitaxy, nowadays ELOG is being carried out even by non-equilibrium methods such as metal organic vapour phase epitaxy. In the ELOG method, the intermediate defective seed and the mask layers still exist between the laterally grown purer III-V layer and silicon. In a modified ELOG method called corrugated epitaxial lateral overgrowth (CELOG) method, it is possible to obtain direct interface between the III-V layer and silicon. In this presentation we exemplify some recent results obtained by these techniques. We assess the potentials of these methods along with the other existing methods for realizing truly monolithic photonic integration on silicon and III-V/Si heterojunction solar cells.

Surface and Interface Chemistry for Gate Stacks on Silicon

NASA Astrophysics Data System (ADS)

Frank, M. M.; Chabal, Y. J.

This chapter addresses the fundamental silicon surface science associated with the continued progress of nanoelectronics along the path prescribed by Moore's law. Focus is on hydrogen passivation layers and on ultrathin oxide films encountered during silicon cleaning and gate stack formation in the fabrication of metal-oxide-semiconductor field-effect transistors (MOSFETs). Three main topics are addressed. (i) First, the current practices and understanding of silicon cleaning in aqueous solutions are reviewed, including oxidizing chemistries and cleans leading to a hydrogen passivation layer. The dependence of the final surface termination and morphology/roughness on reactant choice and pH and the influence of impurities such as dissolved oxygen or metal ions are discussed. (ii) Next, the stability of hydrogen-terminated silicon in oxidizing liquid and gas phase environments is considered. In particular, the remarkable stability of hydrogen-terminated silicon surface in pure water vapor is discussed in the context of atomic layer deposition (ALD) of high-permittivity (high-k) gate dielectrics where water is often used as an oxygen precursor. Evidence is also provided for co-operative action between oxygen and water vapor that accelerates surface oxidation in humid air. (iii) Finally, the fabrication of hafnium-, zirconium- and aluminum-based high-k gate stacks is described, focusing on the continued importance of the silicon/silicon oxide interface. This includes a review of silicon surface preparation by wet or gas phase processing and its impact on high-k nucleation during ALD growth, and the consideration of gate stack capacitance and carrier mobility. In conclusion, two issues are highlighted: the impact of oxygen vacancies on the electrical characteristics of high-k MOS devices, and the way alloyed metal ions (such as Al in Hf-based gate stacks) in contact with the interfacial silicon oxide layer can be used to control flatband and threshold voltages.

Incorporation of dopant impurities into a silicon oxynitride matrix containing silicon nanocrystals

DOE Office of Scientific and Technical Information (OSTI.GOV)

Ehrhardt, Fabien; Muller, Dominique; Slaoui, Abdelilah, E-mail: abdelilah.slaoui@unistra.fr

2016-05-07

Dopant impurities, such as gallium (Ga), indium (In), and phosphorus (P), were incorporated into silicon-rich silicon oxynitride (SRSON) thin films by the ion implantation technique. To form silicon nanoparticles, the implanted layers were thermally annealed at temperatures up to 1100 °C for 60 min. This thermal treatment generates a phase separation of the silicon nanoparticles from the SRSON matrix in the presence of the dopant atoms. We report on the position of the dopant species within the host matrix and relative to the silicon nanoparticles, as well as on the effect of the dopants on the crystalline structure and the size ofmore » the Si nanoparticles. The energy-filtered transmission electron microscopy technique is thoroughly used to identify the chemical species. The distribution of the dopant elements within the SRSON compound is determined using Rutherford backscattering spectroscopy. Energy dispersive X-ray mapping coupled with spectral imaging of silicon plasmons was performed to spatially localize at the nanoscale the dopant impurities and the silicon nanoparticles in the SRSON films. Three different behaviors were observed according to the implanted dopant type (Ga, In, or P). The In-doped SRSON layers clearly showed separated nanoparticles based on indium, InOx, or silicon. In contrast, in the P-doped SRSON layers, Si and P are completely miscible. A high concentration of P atoms was found within the Si nanoparticles. Lastly, in Ga-doped SRSON the Ga atoms formed large nanoparticles close to the SRSON surface, while the Si nanoparticles were localized in the bulk of the SRSON layer. In this work, we shed light on the mechanisms responsible for these three different behaviors.« less

Towards substrate engineering of graphene-silicon Schottky diode photodetectors.

PubMed

Selvi, Hakan; Unsuree, Nawapong; Whittaker, Eric; Halsall, Matthew P; Hill, Ernie W; Thomas, Andrew; Parkinson, Patrick; Echtermeyer, Tim J

2018-02-15

Graphene-silicon Schottky diode photodetectors possess beneficial properties such as high responsivities and detectivities, broad spectral wavelength operation and high operating speeds. Various routes and architectures have been employed in the past to fabricate devices. Devices are commonly based on the removal of the silicon-oxide layer on the surface of silicon by wet-etching before deposition of graphene on top of silicon to form the graphene-silicon Schottky junction. In this work, we systematically investigate the influence of the interfacial oxide layer, the fabrication technique employed and the silicon substrate on the light detection capabilities of graphene-silicon Schottky diode photodetectors. The properties of devices are investigated over a broad wavelength range from near-UV to short-/mid-infrared radiation, radiation intensities covering over five orders of magnitude as well as the suitability of devices for high speed operation. Results show that the interfacial layer, depending on the required application, is in fact beneficial to enhance the photodetection properties of such devices. Further, we demonstrate the influence of the silicon substrate on the spectral response and operating speed. Fabricated devices operate over a broad spectral wavelength range from the near-UV to the short-/mid-infrared (thermal) wavelength regime, exhibit high photovoltage responses approaching 10 6 V W -1 and short rise- and fall-times of tens of nanoseconds.

Low temperature perovskite solar cells with an evaporated TiO 2 compact layer for perovskite silicon tandem solar cells

DOE Office of Scientific and Technical Information (OSTI.GOV)

Bett, Alexander J.; Schulze, Patricia S. C.; Winkler, Kristina

Silicon-based tandem solar cells can overcome the efficiency limit of single junction silicon solar cells. Perovskite solar cells are particularly promising as a top cell in monolithic tandem devices due to their rapid development towards high efficiencies, a tunable band gap with a sharp optical absorption edge and a simple production process. In monolithic tandem devices, the perovskite solar cell is deposited directly on the silicon cell, requiring low-temperature processes (< 200 °C) to maintain functionality of under-lying layers of the silicon cell in case of highly efficient silicon hetero-junction (SHJ) bottom solar cell. In this work, we present amore » complete low-temperature process for perovskite solar cells including a mesoporous titanium oxide (TiO 2) scaffold - a structure yielding the highest efficiencies for single-junction perovskite solar cells. We show that evaporation of the compact TiO 2 hole blocking layer and ultra-violet (UV) curing for the mesoporous TiO 2 layer allows for good performance, comparable to high-temperature (> 500 °C) processes. With both manufacturing routes, we obtain short-circuit current densities (J SC) of about 20 mA/cm 2, open-circuit voltages (V OC) over 1 V, fill factors (FF) between 0.7 and 0.8 and efficiencies (n) of more than 15%. We further show that the evaporated TiO 2 layer is suitable for the application in tandem devices. The series resistance of the layer itself and the contact resistance to an indium doped tin oxide (ITO) interconnection layer between the two sub-cells are low. Additionally, the low parasitic absorption for wavelengths above the perovskite band gap allow a higher absorption in the silicon bottom solar cell, which is essential to achieve high tandem efficiencies.« less

Low temperature perovskite solar cells with an evaporated TiO 2 compact layer for perovskite silicon tandem solar cells

DOE PAGES

Bett, Alexander J.; Schulze, Patricia S. C.; Winkler, Kristina; ...

2017-09-21

Silicon-based tandem solar cells can overcome the efficiency limit of single junction silicon solar cells. Perovskite solar cells are particularly promising as a top cell in monolithic tandem devices due to their rapid development towards high efficiencies, a tunable band gap with a sharp optical absorption edge and a simple production process. In monolithic tandem devices, the perovskite solar cell is deposited directly on the silicon cell, requiring low-temperature processes (< 200 °C) to maintain functionality of under-lying layers of the silicon cell in case of highly efficient silicon hetero-junction (SHJ) bottom solar cell. In this work, we present amore » complete low-temperature process for perovskite solar cells including a mesoporous titanium oxide (TiO 2) scaffold - a structure yielding the highest efficiencies for single-junction perovskite solar cells. We show that evaporation of the compact TiO 2 hole blocking layer and ultra-violet (UV) curing for the mesoporous TiO 2 layer allows for good performance, comparable to high-temperature (> 500 °C) processes. With both manufacturing routes, we obtain short-circuit current densities (J SC) of about 20 mA/cm 2, open-circuit voltages (V OC) over 1 V, fill factors (FF) between 0.7 and 0.8 and efficiencies (n) of more than 15%. We further show that the evaporated TiO 2 layer is suitable for the application in tandem devices. The series resistance of the layer itself and the contact resistance to an indium doped tin oxide (ITO) interconnection layer between the two sub-cells are low. Additionally, the low parasitic absorption for wavelengths above the perovskite band gap allow a higher absorption in the silicon bottom solar cell, which is essential to achieve high tandem efficiencies.« less

Multilayer solar cell waveguide structures containing metamaterials

NASA Astrophysics Data System (ADS)

Hamouche, Houria.; Shabat, Mohammed. M.; Schaadt, Daniel M.

2017-01-01

Multilayer antireflection coating structures made from silicon and metamaterials are designed and investigated using the Transfer Matrix Method (TMM). The Transfer Matrix Method is a very useful algorithm for the analysis of periodic structures. We investigate in this paper two anti-reflection coating structures for silicon solar cells with a metamaterial film layer. In the first structure, the metamaterial film layer is sandwiched between a semi-infinite glass cover layer and a semi-infinite silicon substrate layer. The second structure consists of a four layers, a pair of metamaterial-dielectric layer with opposite real part of refractive indices, is placed between the two semi-infinite cover and substrate. We have simulated the absorptivity property of the structures for adjustable thicknesses by using MAPLE software. The absorptivity of the structures achieves greater than 80% for incident electromagnetic wave of transverse magnetic (TM) polarization.

Simulation of plasma double-layer structures

NASA Technical Reports Server (NTRS)

Borovsky, J. E.; Joyce, G.

1982-01-01

Electrostatic plasma double layers are numerically simulated by means of a magnetized 2 1/2 dimensional particle in cell method. The investigation of planar double layers indicates that these one dimensional potential structures are susceptible to periodic disruption by instabilities in the low potential plasmas. Only a slight increase in the double layer thickness with an increase in its obliqueness to the magnetic field is observed. Weak magnetization results in the double layer electric field alignment of accelerated particles and strong magnetization results in their magnetic field alignment. The numerical simulations of spatially periodic two dimensional double layers also exhibit cyclical instability. A morphological invariance in two dimensional double layers with respect to the degree of magnetization implies that the potential structures scale with Debye lengths rather than with gyroradii. Electron beam excited electrostatic electron cyclotron waves and (ion beam driven) solitary waves are present in the plasmas adjacent to the double layers.

The behavior of silicon and boron in the surface of corroded nuclear waste glasses : an EFTEM study.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Buck, E. C.; Smith, K. L.; Blackford, M. G.

1999-11-23

Using electron energy-loss filtered transmission electron microscopy (EFTEM), we have observed the formation of silicon-rich zones on the corroded surface of a West Valley (WV6) glass. This layer is approximately 100-200 nm thick and is directly underneath a precipitated smectite clay layer. Under conventional (C)TEM illumination, this layer is invisible; indeed, more commonly used analytical techniques, such as x-ray energy dispersive spectroscopy (EDS), have failed to describe fully the localized changes in the boron and silicon contents across this region. Similar silicon-rich and boron-depleted zones were not found on corroded Savannah River Laboratory (SRL) borosilicate glasses, including SRL-EA and SRL-51,more » although they possessed similar-looking clay layers. This study demonstrates a new tool for examining the corroded surfaces of materials.« less

AES study on the chemical composition of ferroelectric BaTiO3 thin films RF sputter-deposited on silicon

NASA Technical Reports Server (NTRS)

Dharmadhikari, V. S.; Grannemann, W. W.

1983-01-01

AES depth profiling data are presented for thin films of BaTiO3 deposited on silicon by RF sputtering. By profiling the sputtered BaTiO3/silicon structures, it was possible to study the chemical composition and the interface characteristics of thin films deposited on silicon at different substrate temperatures. All the films showed that external surface layers were present, up to a few tens of angstroms thick, the chemical composition of which differed from that of the main layer. The main layer had stable composition, whereas the intermediate film-substrate interface consisted of reduced TiO(2-x) oxides. The thickness of this intermediate layer was a function of substrate temperature. All the films showed an excess of barium at the interface. These results are important in the context of ferroelectric phenomena observed in BaTiO3 thin films.

Nitridation of silicon by nitrogen neutral beam

NASA Astrophysics Data System (ADS)

Hara, Yasuhiro; Shimizu, Tomohiro; Shingubara, Shoso

2016-02-01

Silicon nitridation was investigated at room temperature using a nitrogen neutral beam (NB) extracted at acceleration voltages of less than 100 V. X-ray photoelectron spectroscopy (XPS) analysis confirmed the formation of a Si3N4 layer on a Si (1 0 0) substrate when the acceleration voltage was higher than 20 V. The XPS depth profile indicated that nitrogen diffused to a depth of 36 nm for acceleration voltages of 60 V and higher. The thickness of the silicon nitrided layer increased with the acceleration voltages from 20 V to 60 V. Cross-sectional transmission electron microscopy (TEM) analysis indicated a Si3N4 layer thickness of 3.1 nm was obtained at an acceleration voltage of 100 V. Moreover, it was proved that the nitrided silicon layer formed by the nitrogen NB at room temperature was effective as the passivation film in the wet etching process.

A wafer-level vacuum package using glass-reflowed silicon through-wafer interconnection for nano/micro devices.

PubMed

Jin, Joo-Young; Yoo, Seung-Hyun; Yoo, Byung-Wook; Kim, Yong-Kweon

2012-07-01

We propose a vacuum wafer-level packaging (WLP) process using glass-reflowed silicon via for nano/micro devices (NMDs). A through-wafer interconnection (TWIn) substrate with silicon vias and reflowed glass is introduced to accomplish a vertical feed-through of device. NMDs are fabricated in the single crystal silicon (SCS) layer which is formed on the TWIn substrate by Au eutectic bonding including Cr adhesion layer. The WLPof the devices is achieved with the capping glass wafer anodically bonded to the SCS layer. In order to demonstrate the successful hermetic packaging, we fabricated the micro-Pirani gauge in the SCS layer, and packaged it in the wafer-level. The vacuum level inside the packaging was measured to be 3.1 Torr with +/- 0.12 Torr uncertainty, and the packaging leakage was not detected during 24 hour after the packaging.

Varying potential silicon carbide gas sensor

NASA Technical Reports Server (NTRS)

Shields, Virgil B. (Inventor); Ryan, Margaret A. (Inventor); Williams, Roger M. (Inventor)

1997-01-01

A hydrocarbon gas detection device operates by dissociating or electro-chemically oxidizing hydrocarbons adsorbed to a silicon carbide detection layer. Dissociation or oxidation are driven by a varying potential applied to the detection layer. Different hydrocarbon species undergo reaction at different applied potentials so that the device is able to discriminate among various hydrocarbon species. The device can operate at temperatures between 100.degree. C. and at least 650.degree. C., allowing hydrocarbon detection in hot exhaust gases. The dissociation reaction is detected either as a change in a capacitor or, preferably, as a change of current flow through an FET which incorporates the silicon carbide detection layers. The silicon carbide detection layer can be augmented with a pad of catalytic material which provides a signal without an applied potential. Comparisons between the catalytically produced signal and the varying potential produced signal may further help identify the hydrocarbon present.

Silicon-based hot electron emitting substrate with double tunneling

NASA Astrophysics Data System (ADS)

Chen, Fei; Zhan, Xinghua; Salcic, Zoran; Wong, Chee Cheong; Gao, Wei

2017-07-01

We propose a novel silicon structure, Hot Electron Emitting Substrate (HEES), which exhibits important effect of repeated tunneling at two different voltage ranges, which we refer to as double tunneling. In ambient atmosphere and room temperature, the I-V characteristic of HEES shows two current peaks during voltage sweep from 2 to 15 V. These two peaks are formed by the Fowler-Nordheim (FN) tunneling effect and tunneling diode mechanism, respectively.

Gamma-telescopes Fermi/LAT and GAMMA-400 Trigger Systems Event Recognizing Methods Comparison

NASA Astrophysics Data System (ADS)

Arkhangelskaja, I. V.; Murchenko, A. E.; Chasovikov, E. N.; Arkhangelskiy, A. I.; Kheymits, M. D.

Usually instruments for high-energy γ-quanta registration consists of converter (where γ-quanta produced pairs) and calorimeter for particles energy measurements surrounded by anticoincidence shield used to events identification (whether incident particle was charged or neutral). The influence of pair formation by γ-quanta in shield and the backsplash (moved in the opposite direction particles created due high energy γ-rays interact with calorimeter) should be taken into account. It leads to decrease both effective area and registration efficiency at E>10 GeV. In the presented article the event recognizing methods used in Fermi/LAT trigger system is considered in comparison with the ones applied in counting and triggers signals formation system of gamma-telescope GAMMA-400. The GAMMA-400 (Gamma Astronomical Multifunctional Modular Apparatus) will be the new high-apogee space γ-observatory. The GAMMA-400 consist of converter-tracker based on silicon-strip coordinate detectors interleaved with tungsten foils, imaging calorimeter make of 2 layers of double (x, y) silicon strip coordinate detectors interleaved with planes of CsI(Tl) crystals and the electromagnetic calorimeter CC2 consists only of CsI(Tl) crystals. Several plastics detections systems used as anticoincidence shield, for particles energy and moving direction estimations. The main differences of GAMMA-400 constructions from Fermi/LAT one are using the time-of-flight system with base of 50 cm and double layer structure of plastic detectors provides more effective particles direction definition and backsplash rejection. Also two calorimeters in GAMMA-400 composed the total absorbtion spectrometer with total thickness ∼ 25 X0 or ∼1.2 λ0 for vertical incident particles registration and 54 X0 or 2.5 λ0 for laterally incident ones (where λ0 is nuclear interaction length). It provides energy resolution 1-2% for 10 GeV-3.0×103 GeV events while the Fermi/LAT energy resolution does not reach such a value because of its calorimeter thickness is only ∼10 X0 and energy of registered particles is defined by shower profile analysis. Less than 3% photons will be wrongly recognized as electrons or protons in double-layer ACtop taking into account both temporal and amplitude trigger marker analysis methods during onboard processing in the counting and triggers signals formation system of GAMMA-400. The proton rejection factor will be ∼10-5. The Fermi/LAT based on a 4 × 4 array of identical towers each contains a tracker, calorimeter and data acquisition module. Each tracker consists of 18 x-y silicon-strip layers. The calorimeter in each tower made of eight layers in a hodoscopic arrangement for measure the three-dimensional profiles of showers permits corrections for energy leakage and enhances the capability to discriminate hadronic cosmic rays. The each layer consists of 12 CsI(Tl) based bars. The segmented anticoincidence shield covers the array of towers. Unfortunately, several types of biases lead to systematic effects caused high values of relative systematic uncertainties of the exposure, the number of signal events, the induced fractional signal and so on. For example non confirmed announcement of ∼133 GeV line detection and lost sources in different Fermi catalogues (1FGL, 2FGL, 3FGL) - just well seen in 2FGL Cygnus X-3 (J2032.1+4049) does not appear in 3FGL. It allows to conclude sufficient biases in LAT characteristics obtained methods and event recognized algorithms. Now Fermi/LAT operates during ∼ 7 years but effective caveats methods continuously to be proposed. Respectively, continuation of measurements with use of other telescopes is necessary, and realization of GAMMA-400 will allow improving the results.

Fabrication Methods for Adaptive Deformable Mirrors

NASA Technical Reports Server (NTRS)

Toda, Risaku; White, Victor E.; Manohara, Harish; Patterson, Keith D.; Yamamoto, Namiko; Gdoutos, Eleftherios; Steeves, John B.; Daraio, Chiara; Pellegrino, Sergio

2013-01-01

Previously, it was difficult to fabricate deformable mirrors made by piezoelectric actuators. This is because numerous actuators need to be precisely assembled to control the surface shape of the mirror. Two approaches have been developed. Both approaches begin by depositing a stack of piezoelectric films and electrodes over a silicon wafer substrate. In the first approach, the silicon wafer is removed initially by plasmabased reactive ion etching (RIE), and non-plasma dry etching with xenon difluoride (XeF2). In the second approach, the actuator film stack is immersed in a liquid such as deionized water. The adhesion between the actuator film stack and the substrate is relatively weak. Simply by seeping liquid between the film and the substrate, the actuator film stack is gently released from the substrate. The deformable mirror contains multiple piezoelectric membrane layers as well as multiple electrode layers (some are patterned and some are unpatterned). At the piezolectric layer, polyvinylidene fluoride (PVDF), or its co-polymer, poly(vinylidene fluoride trifluoroethylene P(VDF-TrFE) is used. The surface of the mirror is coated with a reflective coating. The actuator film stack is fabricated on silicon, or silicon on insulator (SOI) substrate, by repeatedly spin-coating the PVDF or P(VDFTrFE) solution and patterned metal (electrode) deposition. In the first approach, the actuator film stack is prepared on SOI substrate. Then, the thick silicon (typically 500-micron thick and called handle silicon) of the SOI wafer is etched by a deep reactive ion etching process tool (SF6-based plasma etching). This deep RIE stops at the middle SiO2 layer. The middle SiO2 layer is etched by either HF-based wet etching or dry plasma etch. The thin silicon layer (generally called a device layer) of SOI is removed by XeF2 dry etch. This XeF2 etch is very gentle and extremely selective, so the released mirror membrane is not damaged. It is possible to replace SOI with silicon substrate, but this will require tighter DRIE process control as well as generally longer and less efficient XeF2 etch. In the second approach, the actuator film stack is first constructed on a silicon wafer. It helps to use a polyimide intermediate layer such as Kapton because the adhesion between the polyimide and silicon is generally weak. A mirror mount ring is attached by using adhesive. Then, the assembly is partially submerged in liquid water. The water tends to seep between the actuator film stack and silicon substrate. As a result, the actuator membrane can be gently released from the silicon substrate. The actuator membrane is very flat because it is fixed to the mirror mount prior to the release. Deformable mirrors require extremely good surface optical quality. In the technology described here, the deformable mirror is fabricated on pristine substrates such as prime-grade silicon wafers. The deformable mirror is released by selectively removing the substrate. Therefore, the released deformable mirror surface replicates the optical quality of the underlying pristine substrate.

Origin of dislocation luminescence centers and their reorganization in p-type silicon crystal subjected to plastic deformation and high temperature annealing.

PubMed

Pavlyk, Bohdan; Kushlyk, Markiyan; Slobodzyan, Dmytro

2017-12-01

Changes of the defect structure of silicon p-type crystal surface layer under the influence of plastic deformation and high temperature annealing in oxygen atmosphere were investigated by deep-level capacitance-modulation spectroscopy (DLCMS) and IR spectroscopy of molecules and atom vibrational levels. Special role of dislocations in the surface layer of silicon during the formation of its energy spectrum and rebuilding the defective structure was established. It is shown that the concentration of linear defects (N ≥ 10 4  cm -2 ) enriches surface layer with electrically active complexes (dislocation-oxygen, dislocation-vacancy, and dislocation-interstitial atoms of silicon) which are an effective radiative recombination centers.

Observation of enhanced infrared absorption in silicon supersaturated with gold by pulsed laser melting of nanometer-thick gold films

NASA Astrophysics Data System (ADS)

Chow, Philippe K.; Yang, Wenjie; Hudspeth, Quentin; Lim, Shao Qi; Williams, Jim S.; Warrender, Jeffrey M.

2018-04-01

We demonstrate that pulsed laser melting (PLM) of thin 1, 5, and 10 nm-thick vapor-deposited gold layers on silicon enhances its room-temperature sub-band gap infrared absorption, as in the case of ion-implanted and PLM-treated silicon. The former approach offers reduced fabrication complexity and avoids implantation-induced lattice damage compared to ion implantation and pulsed laser melting, while exhibiting comparable optical absorptance. We additionally observed strong broadband absorptance enhancement in PLM samples made using 5- and 10-nm-thick gold layers. Raman spectroscopy and Rutherford backscattering analysis indicate that such an enhancement could be explained by absorption by a metastable, disordered and gold-rich surface layer. The sheet resistance and the diode electrical characteristics further elucidate the role of gold-supersaturation in silicon, revealing the promise for future silicon-based infrared device applications.

Tensile strength of aluminium nitride films

NASA Astrophysics Data System (ADS)

Zong, Deng Gang; Ong, Chung Wo; Aravind, Manju; Tsang, Mei Po; Loong Choy, Chung; Lu, Deren; Ma, Dejun

2004-11-01

Two-layered aluminium nitride (AlN)/silicon nitride microbridges were fabricated for microbridge tests to evaluate the elastic modulus, residual stress and tensile strength of the AlN films. The silicon nitride layer was added to increase the robustness of the structure. In a microbridge test, load was applied to the centre of a microbridge and was gradually increased by a nano-indenter equipped with a wedge tip until the sample was broken, while displacement was recorded coherently. Measurements were performed on single-layered silicon nitride microbridges and two-layered AlN/silicon nitride microbridges respectively. The data were fitted to a theory to derive the elastic modulus, residual stress and tensile strength of the silicon nitride films and AlN films. For the AlN films, the three parameters were determined to be 200, 0.06 and 0.3 GPa, respectively. The values of elastic modulus obtained were consistent with those measured by conventional nano-indentation method. The tensile strength value can be used as a reference to reflect the maximum tolerable tensile stress of AlN films when they are used in micro-electromechanical devices.

Phosphorus diffusion gettering process of multicrystalline silicon using a sacrificial porous silicon layer

PubMed Central

2012-01-01

The aims of this work are to getter undesirable impurities from low-cost multicrystalline silicon (mc-Si) wafers and then enhance their electronic properties. We used an efficient process which consists of applying phosphorus diffusion into a sacrificial porous silicon (PS) layer in which the gettered impurities have been trapped after the heat treatment. As we have expected, after removing the phosphorus-rich PS layer, the electrical properties of the mc-Si wafers were significantly improved. The PS layers, realized on both sides of the mc-Si substrates, were formed by the stain-etching technique. The phosphorus treatment was achieved using a liquid POCl3-based source on both sides of the mc-Si wafers. The realized phosphorus/PS/Si/PS/phosphorus structures were annealed at a temperature ranging between 700°C and 950°C under a controlled O2 atmosphere, which allows phosphorus to diffuse throughout the PS layers and to getter eventual metal impurities towards the phosphorus-doped PS layer. The effect of this gettering procedure was investigated by means of internal quantum efficiency and the dark current–voltage (I-V) characteristics. The minority carrier lifetime measurements were made using a WTC-120 photoconductance lifetime tester. The serial resistance and the shunt resistance carried out from the dark I-V curves confirm this gettering-related solar cell improvement. It has been shown that the photovoltaic parameters of the gettered silicon solar cells were improved with regard to the ungettered one, which proves the beneficial effect of this gettering process on the conversion efficiency of the multicrystalline silicon solar cells. PMID:22846070

Nonvolatile memory with graphene oxide as a charge storage node in nanowire field-effect transistors

NASA Astrophysics Data System (ADS)

Baek, David J.; Seol, Myeong-Lok; Choi, Sung-Jin; Moon, Dong-Il; Choi, Yang-Kyu

2012-02-01

Through the structural modification of a three-dimensional silicon nanowire field-effect transistor, i.e., a double-gate FinFET, a structural platform was developed which allowed for us to utilize graphene oxide (GO) as a charge trapping layer in a nonvolatile memory device. By creating a nanogap between the gate and the channel, GO was embedded after the complete device fabrication. By applying a proper gate voltage, charge trapping, and de-trapping within the GO was enabled and resulted in large threshold voltage shifts. The employment of GO with FinFET in our work suggests that graphitic materials can potentially play a significant role for future nanoelectronic applications.

Thin-film limit formalism applied to surface defect absorption.

PubMed

Holovský, Jakub; Ballif, Christophe

2014-12-15

The thin-film limit is derived by a nonconventional approach and equations for transmittance, reflectance and absorptance are presented in highly versatile and accurate form. In the thin-film limit the optical properties do not depend on the absorption coefficient, thickness and refractive index individually, but only on their product. We show that this formalism is applicable to the problem of ultrathin defective layer e.g. on a top of a layer of amorphous silicon. We develop a new method of direct evaluation of the surface defective layer and the bulk defects. Applying this method to amorphous silicon on glass, we show that the surface defective layer differs from bulk amorphous silicon in terms of light soaking.

A base-metal conductor system for silicon solar cells

NASA Technical Reports Server (NTRS)

Coleman, M. G.; Pryor, R. A.; Sparks, T. G.

1980-01-01

Solder, copper, and silver are evaluated as conductor layer metals for silicon solar cell metallization on the basis of metal price stability and reliability under operating conditions. Due to its properties and cost, copper becomes an attractive candidate for the conductor layer. It is shown that nickel operates as an excellent diffusion barrier between copper and silicon while simultaneously serving as an electrical contact and mechanical contact to silicon. The nickel-copper system may be applied to the silicon by plating techniques utilizing a variety of plating bath compositions. Solar cells having excellent current-voltage characteristics are fabricated to demonstrate the nickel-copper metallization system.

Laboratory studies of silicon vapor deposition, phase A. [feasibility of producing thin films for photovoltaic applications

NASA Technical Reports Server (NTRS)

Frost, R. T.; Racette, G. W.; Stockhoff, E. H.

1977-01-01

A system is described capable of carrying out silicon vapor deposition experiments in the low 10 to the minus 10th power torr vacuum range. The system was assembled and tested for use in a program aimed at exploration of vacuum heteroepitaxy of silicon on several substrates of potential interest for photovoltaic applications. An experiment is described in which a silicon layer 2.5 microns thick was deposited on a pyrolytically cleaned tungsten substrate held at a temperature of 400 C. Using a resistance heated silicon source, thicker layers can be deposited in periods of hours by utilizing closer source to substrate distances.

Electrosorption capacitance of nanostructured carbon-based materials.

PubMed

Hou, Chia-Hung; Liang, Chengdu; Yiacoumi, Sotira; Dai, Sheng; Tsouris, Costas

2006-10-01

The fundamental mechanism of electrosorption of ions developing a double layer inside nanopores was studied via a combination of experimental and theoretical studies. A novel graphitized-carbon monolithic material has proven to be a good electrical double-layer capacitor that can be applied in the separation of ions from aqueous solutions. An extended electrical double-layer model indicated that the pore size distribution plays a key role in determining the double-layer capacitance in an electrosorption process. Because of the occurrence of double-layer overlapping in narrow pores, mesopores and micropores make significantly different contributions to the double-layer capacitance. Mesopores show good electrochemical accessibility. Micropores present a slow mass transfer of ions and a considerable loss of double-layer capacitance, associated with a shallow potential distribution inside pores. The formation of the diffuse layer inside the micropores determines the magnitude of the double-layer capacitance at low electrolyte concentrations and at conditions close to the point of zero charge of the material. The effect of the double-layer overlapping on the electrosorption capacitance can be reduced by increasing the pore size, electrolyte concentration, and applied potential. The results are relevant to water deionization.

Parallel electric fields in extragalactic jets - Double layers and anomalous resistivity in symbiotic relationships

NASA Technical Reports Server (NTRS)

Borovsky, J. E.

1986-01-01

After examining the properties of Coulomb-collision resistivity, anomalous (collective) resistivity, and double layers, a hybrid anomalous-resistivity/double-layer model is introduced. In this model, beam-driven waves on both sides of a double layer provide electrostatic plasma-wave turbulence that greatly reduces the mobility of charged particles. These regions then act to hold open a density cavity within which the double layer resides. In the double layer, electrical energy is dissipated with 100 percent efficiency into high-energy particles, creating conditions optimal for the collective emission of polarized radio waves.

Inversion layer solar cell fabrication and evaluation

NASA Technical Reports Server (NTRS)

Call, R. L.

1972-01-01

Silicon solar cells with induced junctions were created by forming an inversion layer near the surface of the silicon by supplying a sheet of positive charge above the surface. This charged layer was supplied through three mechanisms: (1) supplying a positive potential to a transparent electrode separated from the silicon surface by a dielectric, (2) contaminating the oxide layer with positive ions, and (3) forming donor surface states that leave a positive charge on the surface. A movable semi-infinite shadow delineated the extent of sensitivity of the cell due to the inversion region. Measurements of the inversion layer cell response to light of different wavelengths indicated it to be more sensitive to the shorter wavelengths of the sun's spectrum than conventional cells. Theory of the conductance of the inversion layer vs. strength of the inversion layer was compared with experiment and found to match. Theoretical determinations of junction depth and inversion layer strength were made as a function of the surface potential for the transparent electrode cell.

Non-destructive evaluation of nano-sized structure of thin film devices by using small angle neutron scattering.

PubMed

Shin, E J; Seong, B S; Choi, Y; Lee, J K

2011-01-01

Nano-sized multi-layers copper-doped SrZrO3, platinum (Pt) and silicon oxide (SiO2) on silicon substrates were prepared by dense plasma focus (DPF) device with the high purity copper anode tip and analyzed by using small angle neutron scattering (SANS) to establish a reliable method for the non-destructive evaluation of the under-layer structure. Thin film was well formed at the time-to-dip of 5 microsec with stable plasma of DPF. Several smooth intensity peaks were periodically observed when neutron beam penetrates the thin film with multi-layers perpendicularly. The platinum layer is dominant to intensity peaks, where the copper-doped SrZnO3 layer next to the platinum layer causes peak broadening. The silicon oxide layer has less effect on the SANS spectra due to its relative thick thickness. The SANS spectra shows thicknesses of platinum and copper-doped SrZnO3 layers as 53 and 25 nm, respectively, which are well agreement with microstructure observation.

Method of evaluating the integrity of the outer carbon layer of triso-coated reactor fuel particles

DOE Office of Scientific and Technical Information (OSTI.GOV)

Caputo, A.J.; Costanzo, D.A.; Lackey, W.J.

1980-10-07

This invention relates to a method for determining defective final layers of carbon on triso-coated fuel particles and the like. Samples of the particles are subjected to a high temperature treatment with gaseous chlorine and thereafter radiographed. The chlorine penetrates through any defective carbon layer and reacts with the underlying silicon carbide resulting in the volatilization of the silicon as sicl4 leaving carbon as a porous layer. This porous carbon layer is easily detected by the radiography.

Low temperature production of large-grain polycrystalline semiconductors

DOEpatents

Naseem, Hameed A [Fayetteville, AR; Albarghouti, Marwan [Loudonville, NY

2007-04-10

An oxide or nitride layer is provided on an amorphous semiconductor layer prior to performing metal-induced crystallization of the semiconductor layer. The oxide or nitride layer facilitates conversion of the amorphous material into large grain polycrystalline material. Hence, a native silicon dioxide layer provided on hydrogenated amorphous silicon (a-Si:H), followed by deposited Al permits induced crystallization at temperatures far below the solid phase crystallization temperature of a-Si. Solar cells and thin film transistors can be prepared using this method.

Investigation of the thickness non-uniformity of the very thin silicon-strip detectors

NASA Astrophysics Data System (ADS)

Liu, Qiang; Ye, Yanlin; Li, Zhihuan; Lin, Chengjian; Jia, Huiming; Ge, Yucheng; Li, Qite; Lou, Jianling; Yang, Xiaofei; Yang, Biao; Feng, Jun; Zang, Hongliang; Chen, Zhiqiang; Liu, Yang; Liu, Wei; Chen, Sidong; Yu, Hanzhou; Li, Jingjing; Zhang, Yun; Yang, Feng; Yang, Lei; Ma, Nanru; Sun, Lijie; Wang, Dongxi

2018-07-01

The properties of some very thin (∼ 20 μm) large-area Single-sided Silicon-Strip Detectors (SSSDs) were investigated by using the 12C-particles elastically scattered from a Au target. In the detection system, each thin SSSD was installed in front of a thick (300 μm or 500 μm) Double-sided Silicon-Strip Detector (DSSD) to form a ΔE - E particle-telescope. The energy calibration of these detectors was realized by varying the beam energy and also by the irradiation from a three-component α-particle source. The thickness distribution each SSSD is precisely determined from the energy loss in the thin layer, which was independently measured by the corresponding DSSD. It is found that, for the SSSD with the nominal thicknesses of ∼ 20 μm, the real thickness may vary by several μm over the active area. The reason for this large non-uniformity still needs to be investigated. For the present application, this non-uniformity could be corrected according to the known pixel-thickness. This correction allows to restore a good particle identification (PID) performance for the entire large-area detector, the importance of which is demonstrated by an example of measuring the cluster-decays of the highly-excited resonant states in 16O.

Solar cells with gallium phosphide/silicon heterojunction

NASA Astrophysics Data System (ADS)

Darnon, Maxime; Varache, Renaud; Descazeaux, Médéric; Quinci, Thomas; Martin, Mickaël; Baron, Thierry; Muñoz, Delfina

2015-09-01

One of the limitations of current amorphous silicon/crystalline silicon heterojunction solar cells is electrical and optical losses in the front transparent conductive oxide and amorphous silicon layers that limit the short circuit current. We propose to grow a thin (5 to 20 nm) crystalline Gallium Phosphide (GaP) by epitaxy on silicon to form a more transparent and more conducting emitter in place of the front amorphous silicon layers. We show that a transparent conducting oxide (TCO) is still necessary to laterally collect the current with thin GaP emitter. Larger contact resistance of GaP/TCO increases the series resistance compared to amorphous silicon. With the current process, losses in the IR region associated with silicon degradation during the surface preparation preceding GaP deposition counterbalance the gain from the UV region. A first cell efficiency of 9% has been obtained on ˜5×5 cm2 polished samples.

Aerosol-Jet-Printing silicone layers and electrodes for stacked dielectric elastomer actuators in one processing device

NASA Astrophysics Data System (ADS)

Reitelshöfer, Sebastian; Göttler, Michael; Schmidt, Philip; Treffer, Philipp; Landgraf, Maximilian; Franke, Jörg

2016-04-01

In this contribution we present recent findings of our efforts to qualify the so called Aerosol-Jet-Printing process as an additive manufacturing approach for stacked dielectric elastomer actuators (DEA). With the presented system we are able to print the two essential structural elements dielectric layer and electrode in one machine. The system is capable of generating RTV-2 silicone layers made of Wacker Elastosil P 7670. Therefore, two aerosol streams of both precursor components A and B are generated in parallel and mixed in one printing nozzle that is attached to a 4-axis kinematic. At maximum speed the printing of one circular Elastosil layer with a calculated thickness of 10 μm and a diameter of 1 cm takes 12 seconds while the process keeps stable for 4.5 hours allowing a quite high overall material output and the generation of numerous silicone layers. By adding a second printing nozzle and the infrastructure to generate a third aerosol, the system is also capable of printing inks with conductive particles in parallel to the silicone. We have printed a reduced graphene oxide (rGO) ink prepared in our lab to generate electrodes on VHB 4905, Elastosil foils and finally on Aerosol-Jet-Printed Elastosil layers. With rGO ink printed on Elastosil foil, layers with a 4-point measured sheet resistance as low as 4 kΩ can be realized leaving room for improving the electrode printing time, which at the moment is not as good as the quite good time-frame for printing the silicone layers. Up to now we have used the system to print a fully functional two-layer stacked DEA to demonstrate the principle of continuously 3D printing actuators.

The role of hydrogenated amorphous silicon oxide buffer layer on improving the performance of hydrogenated amorphous silicon germanium single-junction solar cells

NASA Astrophysics Data System (ADS)

Sritharathikhun, Jaran; Inthisang, Sorapong; Krajangsang, Taweewat; Krudtad, Patipan; Jaroensathainchok, Suttinan; Hongsingtong, Aswin; Limmanee, Amornrat; Sriprapha, Kobsak

2016-12-01

Hydrogenated amorphous silicon oxide (a-Si1-xOx:H) film was used as a buffer layer at the p-layer (μc-Si1-xOx:H)/i-layer (a-Si1-xGex:H) interface for a narrow band gap hydrogenated amorphous silicon germanium (a-Si1-xGex:H) single-junction solar cell. The a-Si1-xOx:H film was deposited by plasma enhanced chemical vapor deposition (PECVD) at 40 MHz in a same processing chamber as depositing the p-type layer. An optimization of the thickness of the a-Si1-xOx:H buffer layer and the CO2/SiH4 ratio was performed in the fabrication of the a-Si1-xGex:H single junction solar cells. By using the wide band gap a-Si1-xOx:H buffer layer with optimum thickness and CO2/SiH4 ratio, the solar cells showed an improvement in the open-circuit voltage (Voc), fill factor (FF), and short circuit current density (Jsc), compared with the solar cells fabricated using the conventional a-Si:H buffer layer. The experimental results indicated the excellent potential of the wide-gap a-Si1-xOx:H buffer layers for narrow band gap a-Si1-xGex:H single junction solar cells.

Activity and lifetime of urease immobilized using layer-by-layer nano self-assembly on silicon microchannels.

PubMed

Forrest, Scott R; Elmore, Bill B; Palmer, James D

2005-01-01

Urease has been immobilized and layered onto the walls of manufactured silicon microchannels. Enzyme immobilization was performed using layer-by-layer nano self-assembly. Alternating layers of oppositely charged polyelectrolytes, with enzyme layers "encased" between them, were deposited onto the walls of the silicon microchannels. The polycations used were polyethylenimine (PEI), polydiallyldimethylammonium (PDDA), and polyallylamine (PAH). The polyanions used were polystyrenesulfonate (PSS) and polyvinylsulfate (PVS). The activity of the immobilized enzyme was tested by pumping a 1 g/L urea solution through the microchannels at various flow rates. Effluent concentration was measured using an ultraviolet/visible spectrometer by monitoring the absorbance of a pH sensitive dye. The architecture of PEI/PSS/PEI/urease/PEI with single and multiple layers of enzyme demonstrated superior performance over the PDDA and PAH architectures. The precursor layer of PEI/PSS demonstrably improved the performance of the reactor. Conversion rates of 70% were achieved at a residence time of 26 s, on d 1 of operation, and >50% at 51 s, on d 15 with a six-layer PEI/urease architecture.

Tailoring properties of lossy-mode resonance optical fiber sensors with atomic layer deposition technique

NASA Astrophysics Data System (ADS)

Kosiel, Kamil; Koba, Marcin; Masiewicz, Marcin; Śmietana, Mateusz

2018-06-01

The paper shows application of atomic layer deposition (ALD) technique as a tool for tailoring sensorial properties of lossy-mode-resonance (LMR)-based optical fiber sensors. Hafnium dioxide (HfO2), zirconium dioxide (ZrO2), and tantalum oxide (TaxOy), as high-refractive-index dielectrics that are particularly convenient for LMR-sensor fabrication, were deposited by low-temperature (100 °C) ALD ensuring safe conditions for thermally vulnerable fibers. Applicability of HfO2 and ZrO2 overlays, deposited with ALD-related atomic level thickness accuracy for fabrication of LMR-sensors with controlled sensorial properties was presented. Additionally, for the first time according to our best knowledge, the double-layer overlay composed of two different materials - silicon nitride (SixNy) and TaxOy - is presented for the LMR fiber sensors. The thin films of such overlay were deposited by two different techniques - PECVD (the SixNy) and ALD (the TaxOy). Such approach ensures fast overlay fabrication and at the same time facility for resonant wavelength tuning, yielding devices with satisfactory sensorial properties.

Hafnium nitride buffer layers for growth of GaN on silicon

DOEpatents

Armitage, Robert D.; Weber, Eicke R.

2005-08-16

Gallium nitride is grown by plasma-assisted molecular-beam epitaxy on (111) and (001) silicon substrates using hafnium nitride buffer layers. Wurtzite GaN epitaxial layers are obtained on both the (111) and (001) HfN/Si surfaces, with crack-free thickness up to 1.2 {character pullout}m. However, growth on the (001) surface results in nearly stress-free films, suggesting that much thicker crack-free layers could be obtained.

Effect of fabrication parameters on morphological and optical properties of highly doped p-porous silicon

NASA Astrophysics Data System (ADS)

Zare, Maryam; Shokrollahi, Abbas; Seraji, Faramarz E.

2011-09-01

Porous silicon (PS) layers were fabricated by anodization of low resistive (highly doped) p-type silicon in HF/ethanol solution, by varying current density, etching time and HF concentration. Atomic force microscopy (AFM) and field emission scanning electron microscope (FESEM) analyses were used to investigate the physical properties and reflection spectrum was used to investigate the optical behavior of PS layers in different fabrication conditions. Vertically aligned mesoporous morphology is observed in fabricated films and with HF concentration higher than 20%. The dependence of porosity, layer thickness and rms roughness of the PS layer on current density, etching time and composition of electrolyte is also observed in obtained results. Correlation between reflectivity and fabrication parameters was also explored. Thermal oxidation was performed on some mesoporous layers that resulted in changes of surface roughness, mean height and reflectivity of the layers.

Die singulation method

DOEpatents

Swiler, Thomas P.; Garcia, Ernest J.; Francis, Kathryn M.

2013-06-11

A method is disclosed for singulating die from a semiconductor substrate (e.g. a semiconductor-on-insulator substrate or a bulk silicon substrate) containing an oxide layer (e.g. silicon dioxide or a silicate glass) and one or more semiconductor layers (e.g. monocrystalline or polycrystalline silicon) located above the oxide layer. The method etches trenches through the substrate and through each semiconductor layer about the die being singulated, with the trenches being offset from each other around at least a part of the die so that the oxide layer between the trenches holds the substrate and die together. The trenches can be anisotropically etched using a Deep Reactive Ion Etching (DRIE) process. After the trenches are etched, the oxide layer between the trenches can be etched away with an HF etchant to singulate the die. A release fixture can be located near one side of the substrate to receive the singulated die.

Die singulation method

DOEpatents

Swiler, Thomas P [Albuquerque, NM; Garcia, Ernest J [Albuquerque, NM; Francis, Kathryn M [Rio Rancho, NM

2014-01-07

A method is disclosed for singulating die from a semiconductor substrate (e.g. a semiconductor-on-insulator substrate or a bulk silicon substrate) containing an oxide layer (e.g. silicon dioxide or a silicate glass) and one or more semiconductor layers (e.g. monocrystalline or polycrystalline silicon) located above the oxide layer. The method etches trenches through the substrate and through each semiconductor layer about the die being singulated, with the trenches being offset from each other around at least a part of the die so that the oxide layer between the trenches holds the substrate and die together. The trenches can be anisotropically etched using a Deep Reactive Ion Etching (DRIE) process. After the trenches are etched, the oxide layer between the trenches can be etched away with a HF etchant to singulate the die. A release fixture can be located near one side of the substrate to receive the singulated die.

Silicon micro-mold and method for fabrication

DOEpatents

Morales, Alfredo M.

2005-01-11

The present invention describes a method for rapidly fabricating a robust 3-dimensional silicon micro-mold for use in preparing complex metal micro-components. The process begins by depositing a conductive metal layer onto one surface of a silicon wafer. A thin photoresist and a standard lithographic mask are then used to transfer a trace image pattern onto the opposite surface of the wafer by exposing and developing the resist. The exposed portion of the silicon substrate is anisotropically etched through the wafer thickness down to conductive metal layer to provide an etched pattern consisting of a series of rectilinear channels and recesses in the silicon which serve as the silicon micro-mold. Microcomponents are prepared with this mold by first filling the mold channels and recesses with a metal deposit, typically by electroplating, and then removing the silicon micro-mold by chemical etching.

Silicon micro-mold

DOEpatents

Morales, Alfredo M [Livermore, CA

2006-10-24

The present invention describes a method for rapidly fabricating a robust 3-dimensional silicon-mold for use in preparing complex metal micro-components. The process begins by depositing a conductive metal layer onto one surface of a silicon wafer. A thin photoresist and a standard lithographic mask are then used to transfer a trace image pattern onto the opposite surface of the wafer by exposing and developing the resist. The exposed portion of the silicon substrate is anisotropically etched through the wafer thickness down to conductive metal layer to provide an etched pattern consisting of a series of rectilinear channels and recesses in the silicon which serve as the silicon micro-mold. Microcomponents are prepared with this mold by first filling the mold channels and recesses with a metal deposit, typically by electroplating, and then removing the silicon micro-mold by chemical etching.

Fabrication of thermal microphotonic sensors and sensor arrays

DOEpatents

Shaw, Michael J.; Watts, Michael R.; Nielson, Gregory N.

2010-10-26

A thermal microphotonic sensor is fabricated on a silicon substrate by etching an opening and a trench into the substrate, and then filling in the opening and trench with silicon oxide which can be deposited or formed by thermally oxidizing a portion of the silicon substrate surrounding the opening and trench. The silicon oxide forms a support post for an optical resonator which is subsequently formed from a layer of silicon nitride, and also forms a base for an optical waveguide formed from the silicon nitride layer. Part of the silicon substrate can be selectively etched away to elevate the waveguide and resonator. The thermal microphotonic sensor, which is useful to detect infrared radiation via a change in the evanescent coupling of light between the waveguide and resonator, can be formed as a single device or as an array.

Catalytically enhanced thermal decomposition of chemically grown silicon oxide layers on Si(001)

DOE Office of Scientific and Technical Information (OSTI.GOV)

Leroy, F., E-mail: leroy@cinam.univ-mrs.fr; Passanante, T.; Cheynis, F.

2016-03-14

The thermal decomposition of Si dioxide layers formed by wet chemical treatment on Si(001) has been studied by low-energy electron microscopy. Independent nucleations of voids occur into the Si oxide layers that open by reaction at the void periphery. Depending on the voids, the reaction rates exhibit large differences via the occurrence of a nonlinear growth of the void radius. This non-steady state regime is attributed to the accumulation of defects and silicon hydroxyl species at the SiO{sub 2}/Si interface that enhances the silicon oxide decomposition at the void periphery.

RF Transmission Lines on Silicon Substrates

NASA Technical Reports Server (NTRS)

Ponchak, George E.

1999-01-01

A review of RF transmission lines on silicon substrates is presented. Through measurements and calculated results, it is shown that attenuation is dominated by conductor loss if silicon substrates with a resistivity greater than 2500 Ohm-cm are used. Si passivation layers affect the transmission line attenuation; however, measured results demonstrate that passivation layers do not necessarily increase attenuation. If standard, low resistivity Si wafers must be used, alternative transmission lines such as thin film microstrip and Co-Planar Waveguide (CPW) on thick polyimide layers must be used. Measured results presented here show that low loss per unit length is achievable with these transmission lines.

Structured Antireflective Coating for Silicon at Submillimeter Frequencies

NASA Astrophysics Data System (ADS)

Padilla, Estefania

2018-01-01

Observations at millimeter and submillimeter wavelengths are useful for many astronomical studies, such as the polarization of the cosmic microwave background or the formation and evolution of galaxy clusters. In order to allow observations over a broad spectral bandwidth (approximatively from 70 to 420 GHz), innovative broadband anti-reflective (AR) optics must be utilized in submillimeter telescopes. Due to its low loss and high refractive index, silicon is a fine optical material at these frequencies, but an AR coating with multiple layers is required to maximize its transmission over a wide bandwidth. Structured multilayer AR coatings for silicon are currently being developed at Caltech and JPL. The development process includes the design of the structured layers with commercial electromagnetic simulation software, the fabrication by using deep reactive ion etching, and the test of the transmission and reflection of the patterned wafers. Geometrical 3D patterns have successfully been etched at the surface of the silicon wafers creating up to 2 layers with different effective refractive indices. The transmission and reflection of single AR layer wafers, measured between 75 and 330 GHz, are close to the simulation predictions. These results allow the development of new designs with 5 or 6 AR layers in order to improve the bandwidth and transmission of the silicon AR coatings.

A modified shark-fin test simulating the single-step/double-mix technique: A comparison of three groups of elastomers.

PubMed

Huettig, Fabian; Chekhani, Usama; Klink, Andrea; Said, Fadi; Rupp, Frank

2018-06-08

The shark-fin test was modified to convey the clinical application of a single-step/double-mix technique assessing the behavior of two viscosities applied at one point in time. A medium and light body polyether (PE), a medium and light body polyvinylsiloxane (PVS), and a medium as well as heavy and light body vinyl polyether silicone (PVXE) impression material were analyzed solely, and in a layered mixture of 1:1 and 3:1 at working times of 50, 80, and 120 s. The fin heights were measured with a digital ruler. The wettability was measured 50 and 80 s after mixing by drop shape analysis. The results showed a synergistic effect of the medium and light body PE. This was not observed in PVXE and PVS. Interestingly, PVXE showed an antagonistic flow behavior in 3:1 mixture with medium body. PVXE was more hydrophilic than PE and PVS. Future rheological studies should clarify the detected flow effects.

Effect of Al gate on the electrical behaviour of Al-doped Ta2O5 stacks

NASA Astrophysics Data System (ADS)

Skeparovski, A.; Novkovski, N.; Atanassova, E.; Paskaleva, A.; Lazarov, V. K.

2011-06-01

The electrical behaviour of Al-doped Ta2O5 films on nitrided silicon and implemented in Al-gated MIS capacitors has been studied. The dopant was introduced into the Ta2O5 through its surface by deposing a thin Al layer on the top of Ta2O5 followed by an annealing process. The HRTEM images reveal that the initial double-layer structure of the stacks composed of doped Ta2O5 and interfacial SiON layer undergoes changes during the formation of the Al gate and transforms into a three-layer structure with an additional layer between the Al electrode and the doped Ta2O5. This layer, being a result of reaction between the Al gate and the Al-doped Ta2O5, affects the overall electrical properties of the stacks. Strong charge trapping/detrapping processes have been established in the vicinity of the doped Ta2O5/SiON interface resulting in a large C-V hysteresis effect. The charge trapping also influences the current conduction in the layers keeping the current density level rather low even at high electric fields (J < 10-6 A cm-2 at 7 MV cm-1). By employing a three-layer model of the stack, the permittivity of both, the Al-doped Ta2O5 and the additional layer, has been estimated and the corresponding conduction mechanisms identified.

SPOUTED BED DESIGN CONSIDERATIONS FOR COATED NUCLEAR FUEL PARTICLES

DOE Office of Scientific and Technical Information (OSTI.GOV)

Marshall, Douglas W.

High Temperature Gas Cooled Reactors (HTGRs) are fueled with tristructural isotropic (TRISO) coated nuclear fuel particles embedded in a carbon-graphite fuel body. TRISO coatings consist of four layers of pyrolytic carbon and silicon carbide that are deposited on uranium ceramic fuel kernels (350µm – 500µm diameters) in a concatenated series of batch depositions. Each layer has dedicated functions such that the finished fuel particle has its own integral containment to minimize and control the release of fission products into the fuel body and reactor core. The TRISO coatings are the primary containment structure in the HTGR reactor and must havemore » very high uniformity and integrity. To ensure high quality TRISO coatings, the four layers are deposited by chemical vapor deposition (CVD) using high purity precursors and are applied in a concatenated succession of batch operations before the finished product is unloaded from the coating furnace. These depositions take place at temperatures ranging from 1230°C to 1550°C and use three different gas compositions, while the fuel particle diameters double, their density drops from 11.1 g/cm3 to 3.0 g/cm3, and the bed volume increases more than 8-fold. All this is accomplished without the aid of sight ports or internal instrumentation that could cause chemical contamination within the layers or mechanical damage to thin layers in the early stages of each layer deposition. The converging section of the furnace retort was specifically designed to prevent bed stagnation that would lead to unacceptably high defect fractions and facilitate bed circulation to avoid large variability in coating layer dimensions and properties. The gas injection nozzle was designed to protect precursor gases from becoming overheated prior to injection, to induce bed spouting and preclude bed stagnation in the bottom of the retort. Furthermore, the retort and injection nozzle designs minimize buildup of pyrocarbon and silicon carbide on the retort wall and manage nozzle orifice accretions. The equipment and operating methods have yielded very good reproducibility in the TRISO coated particles batches.« less

Preparation and characterization of mono- and multilayer films of polymerizable 1,2-polybutadiene using the Langmuir-Blodgett technique.

PubMed

Hitrik, Maria; Gutkin, Vitaly; Lev, Ovadia; Mandler, Daniel

2011-10-04

The essence of this study is to apply the Langmuir-Blodgett (LB) technique for assembling asymmetric membranes. Accordingly, Langmuir films of a (further) polymerizable polymer, 1,2-polybutadiene (1,2-pbd), were studied and transferred onto different solid supports, such as gold, indium tin oxide (ITO), and silicon. The layers were characterized both at the air/water interface as well as on different substrates using numerous methods including cyclic voltammetry, impedance spectroscopy, spectroscopic ellipsometry, atomic force microscopy, X-ray photoelectron spectroscopy, and reflection-absorption Fourier transform infrared spectroscopy. The Langmuir films were stable at the air-water interface as long as they were not exposed to UV irradiation. The LB films formed disorganized layers, which gradually blocked the permeation of different species with increasing the number of deposited layers. The thickness was ca. 4-7 Å per layer. Irradiating the Langmuir films caused their cross-linking at the air-water interface. Furthermore, we took advantage of the reactivity of the double bond of the LB films on the solid supports and graft polymerized acrylic acid on top of the 1,2-pbd layers. This approach is the basis of the formation of an asymmetric membrane that requires different porosity on both of its sides. © 2011 American Chemical Society

Improved Work Function of Poly(3,4-ethylenedioxythiophene): Poly(styrenesulfonic acid) and its Effect on Hybrid Silicon/Organic Heterojunction Solar Cells.

PubMed

Shen, Xiaojuan; Chen, Ling; Pan, Jianmei; Hu, Yue; Li, Songjun; Zhao, Jie

2016-12-01

Hybrid silicon/organic solar cells have been recently extensively investigated due to their simple structure and low-cost fabrication process. However, the efficiency of the solar cells is greatly limited by the barrier height as well as the carrier recombination at the silicon/organic interface. In this work, hydrochloroplatinic acid (H 2 PtCl 6 ) is employed into the poly(3,4-ethlenedioxythiophene):poly(styrenesulfonate) (PEDOT:PSS) solution, and the work function (WF) of the PEDOT:PSS layer has been successfully improved. Based on the Pt-modified PEDOT:PSS layer, the efficiency of the silicon/PEDOT:PSS cell can be increased to 11.46%, corresponding to ~20% enhancement to the one without platinum (Pt) modification. Theoretical and experimental results show that, when increasing the WF of the PEDO:PSS layer, the barrier height between the silicon/PEDOT:PSS interface can be effectively enhanced. Meanwhile, the carrier recombination at the interface is significantly reduced. These results can contribute to better understanding of the interfacial mechanism of silicon/PEDOT:PSS interface, and further improving the device performance of silicon/organic solar cells.

Improved Work Function of Poly(3,4-ethylenedioxythiophene): Poly(styrenesulfonic acid) and its Effect on Hybrid Silicon/Organic Heterojunction Solar Cells

NASA Astrophysics Data System (ADS)

Shen, Xiaojuan; Chen, Ling; Pan, Jianmei; Hu, Yue; Li, Songjun; Zhao, Jie

2016-11-01

Hybrid silicon/organic solar cells have been recently extensively investigated due to their simple structure and low-cost fabrication process. However, the efficiency of the solar cells is greatly limited by the barrier height as well as the carrier recombination at the silicon/organic interface. In this work, hydrochloroplatinic acid (H2PtCl6) is employed into the poly(3,4-ethlenedioxythiophene):poly(styrenesulfonate) (PEDOT:PSS) solution, and the work function (WF) of the PEDOT:PSS layer has been successfully improved. Based on the Pt-modified PEDOT:PSS layer, the efficiency of the silicon/PEDOT:PSS cell can be increased to 11.46%, corresponding to 20% enhancement to the one without platinum (Pt) modification. Theoretical and experimental results show that, when increasing the WF of the PEDO:PSS layer, the barrier height between the silicon/PEDOT:PSS interface can be effectively enhanced. Meanwhile, the carrier recombination at the interface is significantly reduced. These results can contribute to better understanding of the interfacial mechanism of silicon/PEDOT:PSS interface, and further improving the device performance of silicon/organic solar cells.

Influence of hydrogen effusion from hydrogenated silicon nitride layers on the regeneration of boron-oxygen related defects in crystalline silicon

DOE Office of Scientific and Technical Information (OSTI.GOV)

Wilking, S., E-mail: Svenja.Wilking@uni-konstanz.de; Ebert, S.; Herguth, A.

The degradation effect boron doped and oxygen-rich crystalline silicon materials suffer from under illumination can be neutralized in hydrogenated silicon by the application of a regeneration process consisting of a combination of slightly elevated temperature and carrier injection. In this paper, the influence of variations in short high temperature steps on the kinetics of the regeneration process is investigated. It is found that hotter and longer firing steps allowing an effective hydrogenation from a hydrogen-rich silicon nitride passivation layer result in an acceleration of the regeneration process. Additionally, a fast cool down from high temperature to around 550 °C seems tomore » be crucial for a fast regeneration process. It is suggested that high cooling rates suppress hydrogen effusion from the silicon bulk in a temperature range where the hydrogenated passivation layer cannot release hydrogen in considerable amounts. Thus, the hydrogen content of the silicon bulk after the complete high temperature step can be increased resulting in a faster regeneration process. Hence, the data presented here back up the theory that the regeneration process might be a hydrogen passivation of boron-oxygen related defects.« less

Multiple-layered effective medium approximation approach to modeling environmental effects on alumina passivated highly porous silicon nanostructured thin films measured by in-situ Mueller matrix ellipsometry

NASA Astrophysics Data System (ADS)

Mock, Alyssa; Carlson, Timothy; VanDerslice, Jeremy; Mohrmann, Joel; Woollam, John A.; Schubert, Eva; Schubert, Mathias

2017-11-01

Optical changes in alumina passivated highly porous silicon slanted columnar thin films during controlled exposure to toluene vapor are reported. Electron-beam evaporation glancing angle deposition and subsequent atomic layer deposition are utilized to deposit alumina passivated nanostructured porous silicon thin films. In-situ Mueller matrix generalized spectroscopic ellipsometry in an environmental cell is then used to determine changes in optical properties of the nanostructured thin films by inspection of individual Mueller matrix elements, each of which exhibit sensitivity to adsorption. The use of a multiple-layered effective medium approximation model allows for accurate description of the inhomogeneous nature of toluene adsorption onto alumina passivated highly porous silicon slanted columnar thin films.

Magnetomechanical effect in silicon (Cz-Si) surface layers

NASA Astrophysics Data System (ADS)

Koplak, O. V.; Dmitriev, A. I.; Morgunov, R. B.

2012-07-01

The mechanical properties of near-surface layers of Czochralski-grown silicon crystals Cz- n-Si(111) have been found to undergo changes in response to an external constant magnetic field ( B ˜ 0.1 T). A magnetically induced variation in the microhardness, Young's modulus, and coefficient of plasticity of silicon crystals correlates with the change in the lattice parameter and internal stresses of the sample. The growth of an oxide film under exposure to a magnetic field plays the principal role in the magnetomechanical effect due to a decrease in the concentration of oxygen complexes in the near-surface layers of the sample. In microstructured silicon, where the surface is considerably more developed, the magnetic field induces more profound changes in the internal stresses as compared to single crystals.

Optoelectronic transport properties in amorphous/crystalline silicon solar cell heterojunctions measured by frequency-domain photocarrier radiometry: multi-parameter measurement reliability and precision studies.

PubMed

Zhang, Y; Melnikov, A; Mandelis, A; Halliop, B; Kherani, N P; Zhu, R

2015-03-01

A theoretical one-dimensional two-layer linear photocarrier radiometry (PCR) model including the presence of effective interface carrier traps was used to evaluate the transport parameters of p-type hydrogenated amorphous silicon (a-Si:H) and n-type crystalline silicon (c-Si) passivated by an intrinsic hydrogenated amorphous silicon (i-layer) nanolayer. Several crystalline Si heterojunction structures were examined to investigate the influence of the i-layer thickness and the doping concentration of the a-Si:H layer. The experimental data of a series of heterojunction structures with intrinsic thin layers were fitted to PCR theory to gain insight into the transport properties of these devices. The quantitative multi-parameter results were studied with regard to measurement reliability (uniqueness) and precision using two independent computational best-fit programs. The considerable influence on the transport properties of the entire structure of two key parameters that can limit the performance of amorphous thin film solar cells, namely, the doping concentration of the a-Si:H layer and the i-layer thickness was demonstrated. It was shown that PCR can be applied to the non-destructive characterization of a-Si:H/c-Si heterojunction solar cells yielding reliable measurements of the key parameters.

Optoelectronic transport properties in amorphous/crystalline silicon solar cell heterojunctions measured by frequency-domain photocarrier radiometry: Multi-parameter measurement reliability and precision studies

DOE Office of Scientific and Technical Information (OSTI.GOV)

Zhang, Y.; Institute of Electronic Engineering and Optoelectronic Technology, Nanjing University of Science and Technology, Nanjing, Jiangsu 210094; Melnikov, A.

2015-03-15

A theoretical one-dimensional two-layer linear photocarrier radiometry (PCR) model including the presence of effective interface carrier traps was used to evaluate the transport parameters of p-type hydrogenated amorphous silicon (a-Si:H) and n-type crystalline silicon (c-Si) passivated by an intrinsic hydrogenated amorphous silicon (i-layer) nanolayer. Several crystalline Si heterojunction structures were examined to investigate the influence of the i-layer thickness and the doping concentration of the a-Si:H layer. The experimental data of a series of heterojunction structures with intrinsic thin layers were fitted to PCR theory to gain insight into the transport properties of these devices. The quantitative multi-parameter results weremore » studied with regard to measurement reliability (uniqueness) and precision using two independent computational best-fit programs. The considerable influence on the transport properties of the entire structure of two key parameters that can limit the performance of amorphous thin film solar cells, namely, the doping concentration of the a-Si:H layer and the i-layer thickness was demonstrated. It was shown that PCR can be applied to the non-destructive characterization of a-Si:H/c-Si heterojunction solar cells yielding reliable measurements of the key parameters.« less

Reaction layer characterization of the braze joint of silicon nitride to stainless steel

NASA Astrophysics Data System (ADS)

Xu, R.; Indacochea, J. E.

1994-10-01

This investigation studies the role of titanium in the development of the reaction layer in braze joining silicon nitride to stainless steel using titanium-active copper-silver filler metals. This reaction layer formed as a result of titanium diffusing to the filler metal/silicon nitride interface and reacting with the silicon nitride to form the intermetallics, titanium nitride (TiN) and titanium suicide (Ti 5Si3). This reaction layer, as recognized in the literature, allows wetting of the ceramic substrate by the molten filler metal. The reaction layer thickness increases with temperature and time. Its growth rate obeys the parabolic relationship. Activation energies of 220.1 and 210.9 kj/mol were calculated for growth of the reaction layer for the two filler metals used. These values are close to the activation energy of nitrogen in TiN (217.6 kj/mol). Two filler metals were used in this study, Ticusil (68.8 wt% Ag, 26.7 wt% Cu, 4.5 wt% Ti) and CB4 (70.5 wt% Ag, 26.5 wt% Cu, 3.0 wt% Ti). The joints were processed in vacuum at temperatures of 840 to 900 °C at various times. Bonding strength is affected by reaction layer thickness in the absence of Ti-Cu intermetallics in the filler metal matrix.

Light-induced V{sub oc} increase and decrease in high-efficiency amorphous silicon solar cells

DOE Office of Scientific and Technical Information (OSTI.GOV)

Stuckelberger, M., E-mail: michael.stuckelberger@epfl.ch; Riesen, Y.; Despeisse, M.

High-efficiency amorphous silicon (a-Si:H) solar cells were deposited with different thicknesses of the p-type amorphous silicon carbide layer on substrates of varying roughness. We observed a light-induced open-circuit voltage (V{sub oc}) increase upon light soaking for thin p-layers, but a decrease for thick p-layers. Further, the V{sub oc} increase is enhanced with increasing substrate roughness. After correction of the p-layer thickness for the increased surface area of rough substrates, we can exclude varying the effective p-layer thickness as the cause of the substrate roughness dependence. Instead, we explain the observations by an increase of the dangling-bond density in both themore » p-layer—causing a V{sub oc} increase—and in the intrinsic absorber layer, causing a V{sub oc} decrease. We present a mechanism for the light-induced increase and decrease, justified by the investigation of light-induced changes of the p-layer and supported by Advanced Semiconductor Analysis simulation. We conclude that a shift of the electron quasi-Fermi level towards the conduction band is the reason for the observed V{sub oc} enhancements, and poor amorphous silicon quality on rough substrates enhances this effect.« less

Endodontic treatment and esthetic management of a primary double tooth with direct composite using silicone buildup guide.

PubMed

Kulkarni, Vinaya Kumar; Ragavendra, T Raju; Deshmukh, Jeevanand; Vanka, Amit; Duddu, Mahesh Kumar; Patil, Anand Kumar G

2012-04-01

Gemination and fusion are morphological dental anomalies, characterized by the formation of a clinically wide tooth. Gemination occurs when one tooth bud tries to divide, while fusion occurs if two buds unite. The terms double teeth, double formation, conjoined teeth, geminifusion, vicinifusion and dental twinning are often used to describe fusion and gemination. Double teeth are associated with clinical problems such as poor esthetics, spacing problems and caries susceptibility. Management of such cases requires a comprehensive knowledge of the clinical entity as well as the problems associated with it. This report presents a case of primary double tooth in a 6-year-old boy involving maxillary left central incisor. The anomalous tooth was carious and pulpally involved. This was treated conservatively by endodontic treatment and esthetic rehabilitation was done with direct composite restoration using a silicone buildup guide. The treated tooth was followed up until exfoliation.

Endodontic treatment and esthetic management of a primary double tooth with direct composite using silicone buildup guide

PubMed Central

Kulkarni, Vinaya Kumar; Ragavendra, T. Raju; Deshmukh, Jeevanand; Vanka, Amit; Duddu, Mahesh Kumar; Patil, Anand Kumar G.

2012-01-01

Gemination and fusion are morphological dental anomalies, characterized by the formation of a clinically wide tooth. Gemination occurs when one tooth bud tries to divide, while fusion occurs if two buds unite. The terms double teeth, double formation, conjoined teeth, geminifusion, vicinifusion and dental twinning are often used to describe fusion and gemination. Double teeth are associated with clinical problems such as poor esthetics, spacing problems and caries susceptibility. Management of such cases requires a comprehensive knowledge of the clinical entity as well as the problems associated with it. This report presents a case of primary double tooth in a 6-year-old boy involving maxillary left central incisor. The anomalous tooth was carious and pulpally involved. This was treated conservatively by endodontic treatment and esthetic rehabilitation was done with direct composite restoration using a silicone buildup guide. The treated tooth was followed up until exfoliation. PMID:22629077

A delta-doped amorphous silicon thin-film transistor with high mobility and stability

NASA Astrophysics Data System (ADS)

Kim, Pyunghun; Lee, Kyung Min; Lee, Eui-Wan; Jo, Younjung; Kim, Do-Hyung; Kim, Hong-jae; Yang, Key Young; Son, Hyunji; Choi, Hyun Chul

2012-12-01

Ultrathin doped layers, known as delta-doped layers, were introduced within the intrinsic amorphous silicon (a-Si) active layer to fabricate hydrogenated amorphous silicon (a-Si:H) thin-film transistors (TFTs) with enhanced field-effect mobility. The performance of the delta-doped a-Si:H TFTs depended on the phosphine (PH3) flow rate and the distance from the n+ a-Si to the deltadoping layer. The delta-doped a-Si:H TFTs fabricated using a commercial manufacturing process exhibited an enhanced field-effect mobility of approximately ˜0.23 cm2/Vs (compared to a conventional a-Si:H TFT with 0.15 cm2/Vs) and a desirable stability under a bias-temperature stress test.

Modeling optical transmissivity of graphene grate in on-chip silicon photonic device

NASA Astrophysics Data System (ADS)

Amiri, Iraj S.; Ariannejad, M. M.; Jalil, M. A.; Ali, J.; Yupapin, P.

2018-06-01

A three-dimensional (3-D) finite-difference-time-domain (FDTD) analysis was used to simulate a silicon photonic waveguide. We have calculated power and transmission of the graphene used as single or multilayers to study the light transmission behavior. A new technique has been developed to define the straight silicon waveguide integrated with grate graphene layer. The waveguide has a variable grate spacing to be filled by the graphene layer. The number of graphene atomic layers varies between 100 and 1000 (or 380 nm and 3800 nm), the transmitted power obtained varies as ∼30% and ∼80%. The ∼99%, blocking of the light was occurred in 10,000 (or 38,000 nm) atomic layers of the graphene grate.

Real-time observations of interface formation for barium strontium titanate films on silicon

NASA Astrophysics Data System (ADS)

Mueller, A. H.; Suvorova, N. A.; Irene, E. A.; Auciello, O.; Schultz, J. A.

2002-05-01

Ba.5Sr.5TiO3 (BST) film growth by ion sputtering on bare and thermally oxidized silicon was observed in real time using in-situ spectroscopic ellipsometry and time of flight ion scattering and recoil spectrometry techniques. At the outset of BST film deposition on silicon, an approximately 30 Å film with intermediate static dielectric constant (K˜12) and refractive index (n˜2.6 at photon energies of 1.5-3.25 eV) interface layer formed on bare silicon. The interface layer growth rate was greatly reduced on an oxidized silicon substrate. The results have profound implications on the static dielectric constant of BST.

Femtosecond laser-induced periodic surface structures on silicon upon polarization controlled two-color double-pulse irradiation.

PubMed

Höhm, Sandra; Herzlieb, Marcel; Rosenfeld, Arkadi; Krüger, Jörg; Bonse, Jörn

2015-01-12

Two-color double-fs-pulse experiments were performed on silicon wafers to study the temporally distributed energy deposition in the formation of laser-induced periodic surface structures (LIPSS). A Mach-Zehnder interferometer generated parallel or cross-polarized double-pulse sequences at 400 and 800 nm wavelength, with inter-pulse delays up to a few picoseconds between the sub-ablation 50-fs-pulses. Multiple two-color double-pulse sequences were collinearly focused by a spherical mirror to the sample. The resulting LIPSS characteristics (periods, areas) were analyzed by scanning electron microscopy. A wavelength-dependent plasmonic mechanism is proposed to explain the delay-dependence of the LIPSS. These two-color experiments extend previous single-color studies and prove the importance of the ultrafast energy deposition for LIPSS formation.

Design and Fabrication of High-Efficiency CMOS/CCD Imagers

NASA Technical Reports Server (NTRS)

Pain, Bedabrata

2007-01-01

An architecture for back-illuminated complementary metal oxide/semiconductor (CMOS) and charge-coupled-device (CCD) ultraviolet/visible/near infrared- light image sensors, and a method of fabrication to implement the architecture, are undergoing development. The architecture and method are expected to enable realization of the full potential of back-illuminated CMOS/CCD imagers to perform with high efficiency, high sensitivity, excellent angular response, and in-pixel signal processing. The architecture and method are compatible with next-generation CMOS dielectric-forming and metallization techniques, and the process flow of the method is compatible with process flows typical of the manufacture of very-large-scale integrated (VLSI) circuits. The architecture and method overcome all obstacles that have hitherto prevented high-yield, low-cost fabrication of back-illuminated CMOS/CCD imagers by use of standard VLSI fabrication tools and techniques. It is not possible to discuss the obstacles in detail within the space available for this article. Briefly, the obstacles are posed by the problems of generating light-absorbing layers having desired uniform and accurate thicknesses, passivation of surfaces, forming structures for efficient collection of charge carriers, and wafer-scale thinning (in contradistinction to diescale thinning). A basic element of the present architecture and method - the element that, more than any other, makes it possible to overcome the obstacles - is the use of an alternative starting material: Instead of starting with a conventional bulk-CMOS wafer that consists of a p-doped epitaxial silicon layer grown on a heavily-p-doped silicon substrate, one starts with a special silicon-on-insulator (SOI) wafer that consists of a thermal oxide buried between a lightly p- or n-doped, thick silicon layer and a device silicon layer of appropriate thickness and doping. The thick silicon layer is used as a handle: that is, as a mechanical support for the device silicon layer during micro-fabrication.

Photothermal performance of an amorphous silicon photovoltaic panel integrated in a membrane structure

NASA Astrophysics Data System (ADS)

Zhao, Bing; Hu, Jianhui; Chen, Wujun; Qiu, Zhenyu; Zhou, Jinyu; Qu, Yegao; Ge, Binbin

2016-10-01

The amorphous silicon photovoltaic (a-Si PV) cells are widely used for electricity generation from solar energy. When the a-Si PV cells are integrated into building roofs, such as ETFE (ethylene-tetrafouoroethylene) cushions, the temperature characteristics are indispensible for evaluating the thermal performances of a-Si PV and its constructions. This temperature value is directly dependent on the solar irradiance, wind velocity, ambient temperature and installation form. This paper concerns the field experiments and numerical modeling on the temperature characteristics and temperature value of the a-Si PV integrated in a double-layer ETFE cushion structure. To this end, an experimental model composed of two a-Si PV cells and a double-layer ETFE cushion was developed, and the corresponding experiments were carried out under two typical weather conditions (summer sunny and summer cloudy). The theoretical thermal model was developed based on an energy balance equation taking the short wave radiation, long wave radiation, convection and generated power into account. The measured solar irradiance and air temperature were used as real weather conditions for the thermal model. The corresponding differential equation of the a-Si PV temperature varying with the solar irradiance and air temperature was solved by a newly developed program based on the numerical method. The measured results show that the influence of solar irradiance on the temperature is much more significant than the other parameters, and the maximum temperature variation under sunny conditions is greater than that under cloudy conditions. The comparative study between the experimental and numerical results shows the correct predictions of the a-Si PV temperature under the sunny and cloudy conditions. The maximum difference is 3.9 °C with the acceptable reasons of the solar irradiance fluctuation and the PV thermal response time. These findings will provide useful observations and explanations for evaluating the PV and building performances in relation to temperature.

Surface modification of high temperature iron alloys

DOEpatents

Park, Jong-Hee

1995-01-01

A method and article of manufacture of a coated iron based alloy. The method includes providing an iron based alloy substrate, depositing a silicon containing layer on the alloy surface while maintaining the alloy at a temperature of about 700.degree. C.-1200.degree. C. to diffuse silicon into the alloy surface and exposing the alloy surface to an ammonia atmosphere to form a silicon/oxygen/nitrogen containing protective layer on the iron based alloy.

Surface modification of high temperature iron alloys

DOEpatents

Park, J.H.

1995-06-06

A method and article of manufacture of a coated iron based alloy are disclosed. The method includes providing an iron based alloy substrate, depositing a silicon containing layer on the alloy surface while maintaining the alloy at a temperature of about 700--1200 C to diffuse silicon into the alloy surface and exposing the alloy surface to an ammonia atmosphere to form a silicon/oxygen/nitrogen containing protective layer on the iron based alloy. 13 figs.

The scaling of oblique plasma double layers

NASA Technical Reports Server (NTRS)

Borovsky, J. E.

1983-01-01

Strong oblique plasma double layers are investigated using three methods, i.e., electrostatic particle-in-cell simulations, numerical solutions to the Poisson-Vlasov equations, and analytical approximations to the Poisson-Vlasov equations. The solutions to the Poisson-Vlasov equations and numerical simulations show that strong oblique double layers scale in terms of Debye lengths. For very large potential jumps, theory and numerical solutions indicate that all effects of the magnetic field vanish and the oblique double layers follow the same scaling relation as the field-aligned double layers.

Multijunction photovoltaic device and fabrication method

DOEpatents

Arya, Rajeewa R.; Catalano, Anthony W.

1993-09-21

A multijunction photovoltaic device includes first and second amorphous silicon PIN photovoltaic cells in a stacked arrangement. An interface layer, composed of a doped silicon compound, is disposed between the two cells and has a lower bandgap than the respective n- and p-type adjacent layers of the first and second cells. The interface layer forms an ohmic contact with the one or the adjacent cell layers of the same conductivity type, and a tunnel junction with the other of the adjacent cell layers. The disclosed device is fabricated by a glow discharge process.

Method of evaluating the integrity of the outer carbon layer of triso-coated reactor fuel particles

DOEpatents

Caputo, Anthony J.; Costanzo, Dante A.; Lackey, Jr., Walter J.; Layton, Frank L.; Stinton, David P.

1980-01-01

This invention relates to a method for determining defective final layers of carbon on triso-coated fuel particles and the like. Samples of the particles are subjected to a high temperature treatment with gaseous chlorine and thereafter radiographed. The chlorine penetrates through any defective carbon layer and reacts with the underlying silicon carbide resulting in the volatilization of the silicon as SiCl.sub.4 leaving carbon as a porous layer. This porous carbon layer is easily detected by the radiography.

Method of manufacturing a hybrid emitter all back contact solar cell

DOEpatents

Loscutoff, Paul; Rim, Seung

2017-02-07

A method of manufacturing an all back contact solar cell which has a hybrid emitter design. The solar cell has a thin dielectric layer formed on a backside surface of a single crystalline silicon substrate. One emitter of the solar cell is made of doped polycrystalline silicon that is formed on the thin dielectric layer. A second emitter of the solar cell is formed in the single crystalline silicon substrate and is made of doped single crystalline silicon. The method further includes forming contact holes that allow metal contacts to connect to corresponding emitters.

Silicon on ceramic process. Silicon sheet growth development for the large-area silicon sheet task of the low-cost silicon solar array project

NASA Technical Reports Server (NTRS)

Zook, J. D.; Heaps, J. D.; Maciolek, R. B.; Koepke, B. G.; Butter, C. D.; Schuldt, S. B.

1977-01-01

The technical and economic feasibility of producing solar-cell-quality sheet silicon was investigated. The sheets were made by coating one surface of carbonized ceramic substrates with a thin layer of large-grain polycrystalline silicon from the melt. Significant progress was made in all areas of the program.

"Silicon millefeuille": From a silicon wafer to multiple thin crystalline films in a single step

NASA Astrophysics Data System (ADS)

Hernández, David; Trifonov, Trifon; Garín, Moisés; Alcubilla, Ramon

2013-04-01

During the last years, many techniques have been developed to obtain thin crystalline films from commercial silicon ingots. Large market applications are foreseen in the photovoltaic field, where important cost reductions are predicted, and also in advanced microelectronics technologies as three-dimensional integration, system on foil, or silicon interposers [Dross et al., Prog. Photovoltaics 20, 770-784 (2012); R. Brendel, Thin Film Crystalline Silicon Solar Cells (Wiley-VCH, Weinheim, Germany 2003); J. N. Burghartz, Ultra-Thin Chip Technology and Applications (Springer Science + Business Media, NY, USA, 2010)]. Existing methods produce "one at a time" silicon layers, once one thin film is obtained, the complete process is repeated to obtain the next layer. Here, we describe a technology that, from a single crystalline silicon wafer, produces a large number of crystalline films with controlled thickness in a single technological step.

Retinal Layers Measurements following Silicone Oil Tamponade for Retinal Detachment Surgery.

PubMed

Jurišić, Darija; Geber, Mia Zorić; Ćavar, Ivan; Utrobičić, Dobrila Karlica

2017-12-19

This study aimed to investigate the influence of silicone oil on the retinal nerve fiber layer (RNFL) thickness in patients with primary rhegmatogenous retinal detachment who underwent vitreoretinal surgery. The study included 47 patients (eyes), who underwent a pars plana vitrectomy with the silicone oil tamponade. The control group included unoperated eye of all participants. Spectral-domain optical coherence tomography (SD-OCT) was used for the measurements of peripapilar and macular RNFL thickness. The average peripapillary RNFL thickness was significantly higher in the silicone oil filled eyes during endotamponade and after its removal. The eyes with elevated IOP had less thickening of the RNFL in comparison to the eyes with normal IOP. Central macular thickness and macular volume were decreased in the silicone oil filled eyes in comparison to the control eyes. In conclusion, silicone oil caused peripapilar RNFL thickening in the vitrectomized eyes during endotamponade and after silicone oil removal.

Surface Brillouin scattering study of the surface excitations in amorphous silicon layers produced by ion bombardment

NASA Astrophysics Data System (ADS)

Zhang, X.; Comins, J. D.; Every, A. G.; Stoddart, P. R.; Pang, W.; Derry, T. E.

1998-11-01

Thin amorphous silicon layers on crystalline silicon substrates have been produced by argon-ion bombardment of (001) silicon surfaces. Thermally induced surface excitations characteristic of this example of a soft-on-hard system have been investigated by surface Brillouin scattering (SBS) as a function of scattering-angle and amorphous-layer thickness. At large scattering angles or for sufficiently large layer thickness, a second peak is present in the SBS spectrum near the low-energy threshold for the continuum of bulk excitations of the system. The measured spectra are analyzed on the basis of surface elastodynamic Green's functions, which successfully simulate their detailed appearance and identify the second peak as either a Sezawa wave (true surface wave) or a pseudo-Sezawa wave (attenuated surface wave) depending on the scattering parameters. The attributes of the pseudo-Sezawa wave are described; these include its asymmetrical line shape and variation in intensity with k∥d (the product of the surface excitation wave vector and the layer thickness), and its emergence as the Sezawa wave from the low-energy side of the Lamb shoulder at a critical value of k∥d. Furthermore, the behavior of a pronounced minimum in the Lamb shoulder near the longitudinal wave threshold observed in the experiments is reported and is found to be in good agreement with the calculated spectra. The elastic constants of the amorphous silicon layer are determined from the velocity dispersion of the Rayleigh surface acoustic wave and the minimum in the Lamb shoulder.

Influence of design variables on radiation hardness of silicon MINP solar cells

NASA Technical Reports Server (NTRS)

Anderson, W. A.; Solaun, S.; Rao, B. B.; Banerjee, S.

1985-01-01

Metal-insulator-N/P silicon (MINP) solar cells were fabricated using different substrate resistivity values, different N-layer designs, and different I-layer designs. A shallow junction into an 0.3 ohm-cm substrate gave best efficiency whereas a deeper junction into a 1 to 4 ohm-cm substrate gave improved radiation hardness. I-layer design variation did little to influence radiation hardness.

Environmental barrier coating

DOEpatents

Pujari, Vimal K.; Vartabedian, Ara; Collins, William T.; Woolley, David; Bateman, Charles

2012-12-18

The present invention relates generally to a multi-layered article suitable for service in severe environments. The article may be formed of a substrate, such as silicon carbide and/or silicon nitride. The substrate may have a first layer of a mixture of a rare earth silicate and Cordierite. The substrate may also have a second layer of a rare earth silicate or a mixture of a rare earth silicate and cordierite.

Photon induced non-linear quantized double layer charging in quaternary semiconducting quantum dots.

PubMed

Nair, Vishnu; Ananthoju, Balakrishna; Mohapatra, Jeotikanta; Aslam, M

2018-03-15

Room temperature quantized double layer charging was observed in 2 nm Cu 2 ZnSnS 4 (CZTS) quantum dots. In addition to this we observed a distinct non-linearity in the quantized double layer charging arising from UV light modulation of double layer. UV light irradiation resulted in a 26% increase in the integral capacitance at the semiconductor-dielectric (CZTS-oleylamine) interface of the quantum dot without any change in its core size suggesting that the cause be photocapacitive. The increasing charge separation at the semiconductor-dielectric interface due to highly stable and mobile photogenerated carriers cause larger electrostatic forces between the quantum dot and electrolyte leading to an enhanced double layer. This idea was supported by a decrease in the differential capacitance possible due to an enhanced double layer. Furthermore the UV illumination enhanced double layer gives us an AC excitation dependent differential double layer capacitance which confirms that the charging process is non-linear. This ultimately illustrates the utility of a colloidal quantum dot-electrolyte interface as a non-linear photocapacitor. Copyright © 2017 Elsevier Inc. All rights reserved.

Development of high energy density electrical double layer capacitors

NASA Astrophysics Data System (ADS)

Devarajan, Thamarai selvi

Electrochemical Double Layer capacitors (EDLCs) have shown themselves as a viable energy storage alternative. EDLCs have high power density, faster charge/discharge, wide operating temperature and long cycle life compared to batteries since it stores charge by physical separation. Despites all their advantages, their low energy density stand as a bottleneck for capacitors. This research aims to increase the energy density of EDLC without compromising the power density. Energy is proportional to the square of cell voltage. Cell voltage is mainly dependent on electrolyte breakdown. Electrolytes also provide ions for charge separation and conduction. Therefore various electrolytes (Solutes and Solvents) which can give high concentration, solubility and decomposition potential were characterized in the first part of the research. In that study, a novel ionic liquid OPBF4 had higher capacitance and comparable voltage window compared to commercial TEABF4 in Acetonitrile. However, the increased polarity of the fixed ring O-atom and the ion-ion interaction in OPBF4 was responsible for lowering its conductivity. Oxygenated ionic compounds with alkyl groups had lower stability due to beta elimination between two electron withdrawing atoms. Volume based thermodynamics and quantum chemical calculations were used to calculate ion size, HOMO/LUMO energies, and free energy changes and establish relationship with capacitance, redox potential and melting points respectively. In addition free energy of fusion was used to predict the melting point. Ion size had correlation with capacitance due to compact double layer formation. Free energy changes did not explain the differences in melting point and predicted dielectric constant was inconsistent with the polarity. This is presumably due to using Van der Waals volume instead of crystal structure volume and insufficient incorporation of polarization term. The HOMO/LUMO energies gave direct relation between oxidation and reduction potential at 1mA/cm 2. A brief study on non-polar co-solvents for EDLC was studied. Among the solvents studied, fluorinated solvents had low melting point and viscosity due to incorporation of asymmetry. However, because of low dielectric constant, TEABF4 is insoluble and had to be mixed with other solvents. The mixed fluorinated solvents had slightly higher voltage window due to decreased donicity of lone pairs of electrons. The second approach to increasing energy density is to increase capacitance. Capacitance is mainly dependent on surface area and porosity of electrodes. Nanostructured materials which can offer multiple charge storage are currently of interest. Hence, novel NiSi nanotubes were studied as electrodes for supercapacitor applications. Silicon material has high capacity and these inert electrodes can enable higher capacitance by controlling the porosity and functional groups in specific electrolytes. The Silicon wafers were made porous by anodization using hydrofluoric acid. In order to improve the conductivity, the porous silicon was doped, then plated with Ni using electroless plating method and annealed to form nickel mono silicide. Gold was deposited on the back side of the electrode to enhance conductivity. Our porous NiSi electrodes gave capacitance of about 1185muF /cm2 in 0.5 M H 2SO4. Further investigation of oxide formation and modification of functional groups will help achieve higher capacitance.

The Role of Superthermal Electrons in the Formation of Double Layers and their Application in Space Plasmas

NASA Astrophysics Data System (ADS)

Singh, N.

2014-12-01

It is now widely recognized that superthermal electrons commonly exist with the thermal population in most space plasmas. When plasmas consisting of such electron population expand, double layers (DLs) naturally forma due to charge separation; the more mobile superthermal electrons march ahead of the thermal population, leaving a positive charge behind and generating electric fields. Under certain conditions such fields evolve into thin double layers or shocks. The double layers accelerate ions. Such double-layer formation was first invoked to explain expansion of laser produced plasmas. Since then it has been studied in laboratory experiments, and applied to (i) polar wind acceleration,(ii) the existence of low-altitude double layers in the auroral acceleration, (iii) a possible mechanism for the origination of the solar wind, (iv) the helicon double layer thrusters, and (v) the deceleration of electrons after their acceleration in solar flare events. The role of superthermal-electron driven double layers, also known as the low-altitude auroral double layers in the upward current region, in the upward acceleration of ionospheric ions is well-known. In the auroral application the upward moving superthermal electrons consist of backscattered downgoing primary energetic electrons as well as the secondary electrons. Similarly we suggest that such double layers might play roles in the acceleration of ions in the solar wind across the coronal transition region, where the superthermal electrons are supplied by magnetic reconnection events. We will present a unified theoretical view of the superthermal electron-driven double layers and their applications. We will summarize theoretical, experimental, simulation and observational results highlighting the common threads running through the various existing studies.

Test Structures For Bumpy Integrated Circuits

NASA Technical Reports Server (NTRS)

Buehler, Martin G.; Sayah, Hoshyar R.

1989-01-01

Cross-bridge resistors added to comb and serpentine patterns. Improved combination of test structures built into integrated circuit used to evaluate design rules, fabrication processes, and quality of interconnections. Consist of meshing serpentines and combs, and cross bridge. Structures used to make electrical measurements revealing defects in design or fabrication. Combination of test structures includes three comb arrays, two serpentine arrays, and cross bridge. Made of aluminum or polycrystalline silicon, depending on material in integrated-circuit layers evaluated. Aluminum combs and serpentine arrays deposited over steps made by polycrystalline silicon and diffusion layers, while polycrystalline silicon versions of these structures used to cross over steps made by thick oxide layer.

CMOS Imager Has Better Cross-Talk and Full-Well Performance

NASA Technical Reports Server (NTRS)

Pain, Bedabrata; Cunningham, Thomas J.

2011-01-01

A complementary metal oxide/semiconductor (CMOS) image detector now undergoing development is designed to exhibit less cross-talk and greater full-well capacity than do prior CMOS image detectors of the same type. Imagers of the type in question are designed to operate from low-voltage power supplies and are fabricated by processes that yield device features having dimensions in the deep submicron range. Because of the use of low supply potentials, maximum internal electric fields and depletion widths are correspondingly limited. In turn, these limitations are responsible for increases in cross-talk and decreases in charge-handling capacities. Moreover, for small pixels, lateral depletion cannot be extended. These adverse effects are even more accentuated in a back-illuminated CMOS imager, in which photogenerated charge carriers must travel across the entire thickness of the device. The figure shows a partial cross section of the structure in the device layer of the present developmental CMOS imager. (In a practical imager, the device layer would sit atop either a heavily doped silicon substrate or a thin silicon oxide layer on a silicon substrate, not shown here.) The imager chip is divided into two areas: area C, which contains readout circuits and other electronic circuits; and area I, which contains the imaging (photodetector and photogenerated-charge-collecting) pixel structures. Areas C and I are electrically isolated from each other by means of a trench filled with silicon oxide. The electrical isolation between areas C and I makes it possible to apply different supply potentials to these areas, thereby enabling optimization of the supply potential and associated design features for each area. More specifically, metal oxide semiconductor field-effect transistors (MOSFETs) that are typically included in CMOS imagers now reside in area C and can remain unchanged from established designs and operated at supply potentials prescribed for those designs, while the dopings and the lower supply potentials in area I can be tailored to optimize imager performance. In area I, the device layer includes an n+ -doped silicon layer on which is grown an n-doped silicon layer. A p-doped silicon layer is grown on top of the n -doped layer. The total imaging device thickness is the sum of the thickness of the n+, n, and p layers. A pixel photodiode is formed between a surface n+ implant, a p implant underneath it, the aforementioned p layer, and the n and n+ layers. Adjacent to the diode is a gate for transferring photogenerated charges out of the photodiode and into a floating diffusion formed by an implanted p+ layer on an implanted n-doped region. Metal contact pads are added to the back-side for providing back-side bias.

Inverted amorphous silicon solar cell utilizing cermet layers

DOEpatents

Hanak, Joseph J.

1979-01-01

An amorphous silicon solar cell incorporating a transparent high work function metal cermet incident to solar radiation and a thick film cermet contacting the amorphous silicon opposite to said incident surface.

An Investigation of the Wear on Silicon Surface at High Humidity.

PubMed

Wang, Xiaodong; Guo, Jian; Xu, Lin; Cheng, Guanggui; Qian, Linmao

2018-06-16

Using an atomic force microscope (AFM), the wear of monocrystalline silicon (covered by a native oxide layer) at high humidity was investigated. The experimental results indicated that tribochemistry played an important role in the wear of the silicon at different relative humidity levels (RH = 60%, 90%). Since the tribochemical reactions were facilitated at 60% RH, the wear of silicon was serious and the friction force was around 1.58 μN under the given conditions. However, the tribochemical reactions were restrained when the wear pair was conducted at high humidity. As a result, the wear of silicon was very slight and the friction force decreased to 0.85 μN at 90% RH. The slight wear of silicon at high humidity was characterized by etching tests. It was demonstrated that the silicon sample surface was partly damaged and the native oxide layer on silicon sample surface had not been totally removed during the wear process. These results may help us optimize the tribological design of dynamic microelectromechanical systems working in humid conditions.

Microfabricated electrochemiluminescence cell for chemical reaction detection

DOEpatents

Northrup, M. Allen; Hsueh, Yun-Tai; Smith, Rosemary L.

2003-01-01

A detector cell for a silicon-based or non-silicon-based sleeve type chemical reaction chamber that combines heaters, such as doped polysilicon for heating, and bulk silicon for convection cooling. The detector cell is an electrochemiluminescence cell constructed of layers of silicon with a cover layer of glass, with spaced electrodes located intermediate various layers forming the cell. The cell includes a cavity formed therein and fluid inlets for directing reaction fluid therein. The reaction chamber and detector cell may be utilized in any chemical reaction system for synthesis or processing of organic, inorganic, or biochemical reactions, such as the polymerase chain reaction (PCR) and/or other DNA reactions, such as the ligase chain reaction, which are examples of a synthetic, thermal-cycling-based reaction. The ECL cell may also be used in synthesis instruments, particularly those for DNA amplification and synthesis.

Circularly polarized Raman study on diamond structure crystals

NASA Astrophysics Data System (ADS)

Lee, Je-Ho; Kim, Sera; Seong, Maeng-Je

2018-01-01

Circularly polarized Raman and/or photoluminescence (PL) analyses have recently been very important in studying physical properties of many layered materials that were either mechanically exfoliated or grown by chemical-vapor-deposition (CVD) on silicon substrates. Since silicon Raman signal is always accompanied by the circularly polarized Raman and/or PL signal from the layered materials, observation of proper circularly polarized Raman selection rules on silicon substrates would be extremely good indicator that the circularly polarized Raman and/or PL measurements on the layered materials were done properly. We have performed circularly polarized Raman measurements on silicon substrates and compared the results with the Raman intensities calculated by using Raman tensors of the diamond crystal structure. Our experimental results were in excellent agreement with the calculation. Similar circularly polarized Raman analysis done on germanium substrate also showed good agreement.

Pneumatically Actuated Miniature Peristaltic Vacuum Pumps

NASA Technical Reports Server (NTRS)

Feldman, Sabrina; Feldman, Jason; Svehla, Danielle

2003-01-01

Pneumatically actuated miniature peristaltic vacuum pumps have been proposed for incorporation into advanced miniature versions of scientific instruments that depend on vacuum for proper operation. These pumps are expected to be capable of reaching vacuum-side pressures in the torr to millitorr range (from .133 down to .0.13 Pa). Vacuum pumps that operate in this range are often denoted roughing pumps. In comparison with previously available roughing pumps, these pumps are expected to be an order of magnitude less massive and less power-hungry. In addition, they would be extremely robust, and would operate with little or no maintenance and without need for oil or other lubricants. Portable mass spectrometers are typical examples of instruments that could incorporate the proposed pumps. In addition, the proposed pumps could be used as roughing pumps in general laboratory applications in which low pumping rates could be tolerated. The proposed pumps could be designed and fabricated in conventionally machined and micromachined versions. A typical micromachined version (see figure) would include a rigid glass, metal, or plastic substrate and two layers of silicone rubber. The bottom silicone layer would contain shallow pump channels covered by silicone arches that could be pushed down pneumatically to block the channels. The bottom silicone layer would be covered with a thin layer of material with very low gas permeability, and would be bonded to the substrate everywhere except in the channel areas. The top silicone layer would be attached to the bottom silicone layer and would contain pneumatic- actuation channels that would lie crosswise to the pump channels. This version is said to be micromachined because the two silicone layers containing the channels would be fabricated by casting silicone rubber on micromachined silicon molds. The pneumatic-actuation channels would be alternately connected to a compressed gas and (depending on pump design) either to atmospheric pressure or to a partial vacuum source. The design would be such that the higher pneumatic pressure would be sufficient to push the silicone arches down onto the substrates, blocking the channels. Thus, by connecting pneumatic- actuation channels to the two pneumatic sources in spatial and temporal alternation, waves of opening and closing, equivalent to peristalsis, could be made to move along the pump channels. A pump according to this concept could be manufactured inexpensively. Pneumatic sources (compressors and partial vacuum sources) similar those needed for actuation are commercially available; they typically have masses of .100 g and power demands of the order of several W. In a design-optimization effort, it should be possible to reduce masses and power demands below even these low levels and to integrate pneumatic sources along with the proposed pumps into miniature units with overall dimensions of no more than a few centimeters per side.

Double-layer versus single-layer bone-patellar tendon-bone anterior cruciate ligament reconstruction: a prospective randomized study with 3-year follow-up.

PubMed

Mei, Xiaoliang; Zhang, Zhenxiang; Yang, Jingwen

2016-12-01

To evaluate the clinical results of a randomized controlled trial of single-layer versus double-layer bone-patellar tendon-bone (BPTB) anterior cruciate ligament (ACL) reconstruction. Fifty-eight subjects who underwent primary ACL reconstruction with a BPTB allograft were prospectively randomized into two groups: single-layer reconstruction (n = 31) and double-layer reconstruction (n = 27). The following evaluation methods were used: clinical examination, KT-1000 arthrometer measurement, muscle strength, Tegner activity score, Lysholm score, subjective rating scale regarding patient satisfaction and sports performance level, graft retear, contralateral ACL tear, and additional meniscus surgery. Forty-eight subjects (24 in single-layer group and 24 in double-layer group) who were followed up for 3 years were evaluated. Preoperatively, there were no differences between the groups. At 3-year follow-up, the Lachman and pivot-shift test results were better in the double-layer group (P = 0.019 and P < 0.0001, respectively). KT measurements were better in the double-layer group (mean 2.9 versus 1.5 mm; P = 0.0025). The Tegner score was also better in the double-layer group (P = 0.024). There were no significant differences in range of motion, muscle strength, Lysholm score, subjective rating scale, graft retear, and secondary meniscal tear. In ACL reconstruction, double-layer BPTB reconstruction was significantly better than single-layer reconstruction regarding anterior and rotational stability at 3-year follow-up. The results of KT measurements and the Lachman and pivot-shift tests were significantly better in the double-layer group, whereas there was no difference in the anterior drawer test results. The Tegner score was also better in the double-layer group; however, there were no differences in the other subjective findings.

Metallization of Large Silicon Wafers

NASA Technical Reports Server (NTRS)

Pryor, R. A.

1978-01-01

A metallization scheme was developed which allows selective plating of silicon solar cell surfaces. The system is comprised of three layers. Palladium, through the formation of palladium silicide at 300 C in nitrogen, makes ohmic contact to the silicon surface. Nickel, plated on top of the palladium silicide layer, forms a solderable interface. Lead-tin solder on the nickel provides conductivity and allows a convenient means for interconnection of cells. To apply this metallization, three chemical plating baths are employed.

Surface modification of silicon wafer by grafting zwitterionic polymers to improve its antifouling property

NASA Astrophysics Data System (ADS)

Sun, Yunlong; Chen, Changlin; Xu, Heng; Lei, Kun; Xu, Guanzhe; Zhao, Li; Lang, Meidong

2017-10-01

Silicon (111) wafer was modified by triethoxyvinylsilane containing double bond as an intermedium, and then P4VP (polymer 4-vinyl pyridine) brush was "grafted" onto the surface of silicon wafer containing reactive double bonds by adopting the "grafting from" way and Si-P4VP substrate (silicon wafer grafted by P4VP) was obtained. Finally, P4VP brush of Si-P4VP substrate was modified by 1,3-propanesulfonate fully to obtain P4VP-psl brush (zwitterionic polypyridinium salt) and the functional Si-P4VP-psl substrate (silicon wafer grafted by zwitterionic polypyridinium salt based on polymer 4-vinyl pyridine) was obtained successfully. The antifouling property of the silicon wafer, the Si-P4VP substrate and the Si-P4VP-psl substrate was investigated by using bovine serum albumin, mononuclear macrophages (RAW 264.7) and Escherichia coli (E. coli) ATTC25922 as model bacterium. The results showed that compared with the blank sample-silicon wafer, the Si-P4VP-psl substrate had excellent anti-adhesion ability against bovine serum albumin, cells and bacterium, due to zwitterionic P4VP-psl brush (polymer 4-vinyl pyridine salt) having special functionality like antifouling ability on biomaterial field.

Silicon-on-Insulator Pin Diodes.

DTIC Science & Technology

1987-12-01

Thin (0.5 Micron) Silicon-on-Oxidized Silicon Fig. 2.8 SEM Photographs of CVD Silicon Dioxide on Aluminum 28 After 1500 0 C Anneal in Oxygen...silicon nitride over the silicon dioxide encapsu- -9- lation layer and by depositing the silicon dioxide with a plasma CVD process which uses N20 as...relief via thermal expansion matching varies lin- -27- A B Figure 2.8: SEM Photographs of CVD Silicon Dioxide on Aluminum after 15000 C Anneal in Oxygen

Study of the amorphization of surface silicon layers implanted by low-energy helium ions

DOE Office of Scientific and Technical Information (OSTI.GOV)

Lomov, A. A., E-mail: lomov@ftian.ru; Myakon’kikh, A. V.; Oreshko, A. P.

2016-03-15

The structural changes in surface layers of Si(001) substrates subjected to plasma-immersion implantation by (2–5)-keV helium ions to a dose of D = 6 × 10{sup 15}–5 × 10{sup 17} cm{sup –2} have been studied by highresolution X-ray diffraction, Rutherford backscattering, and spectral ellipsometry. It is found that the joint application of these methods makes it possible to determine the density depth distribution ρ(z) in an implanted layer, its phase state, and elemental composition. Treatment of silicon substrates in helium plasma to doses of 6 × 10{sup 16} cm{sup –2} leads to the formation of a 20- to 30-nm-thick amorphizedmore » surface layer with a density close to the silicon density. An increase in the helium dose causes the formation of an internal porous layer.« less

Observation of a stationary, current-free double layer in a plasma

NASA Technical Reports Server (NTRS)

Hairapetian, G.; Stenzel, R. L.

1990-01-01

A stationary, current-free, potential double layer is formed in a two-electron-population plasma due to self-consistent separation of the two electron species. The position and amplitude of the double layer are controlled by the relative densities of the two electron populations. The steady-state double layer traps the colder electrons on the high potential side, and generates a neutralized, monoenergetic ion beam on the low potential side. The field-aligned double layer is annihilated when an electron current is drawn through the plasma.

Method to fabricate silicon chromatographic column comprising fluid ports

DOEpatents

Manginell, Ronald P.; Frye-Mason, Gregory C.; Heller, Edwin J.; Adkins, Douglas R.

2004-03-02

A new method for fabricating a silicon chromatographic column comprising through-substrate fluid ports has been developed. This new method enables the fabrication of multi-layer interconnected stacks of silicon chromatographic columns.

Studies of SERS efficiency of gold coated porous silicon formed on rough silicon backside

NASA Astrophysics Data System (ADS)

Dridi, H.; Haji, L.; Moadhen, A.

2017-12-01

Starting from a rough backside of silicon wafer, we have formed a porous layer by electrochemical anodization and then coated by a thin film of gold. The morphological characteristics of the porous silicon and in turn the metal film are governed by the anodization process and also by the starting surface. So, in order to investigate the Plasmonic aspect of such rough surface which combines roughness inherent to the porous nature and that due to rough starting surface, we have used a dye target molecule to study its SERS signal using a porous silicon layer obtained on the rough backside surface. The use of unusual backside of silicon wafer could be, beside the others, an interesting way to made SERS effective substrate thanks to reproducible rough porous gold on porous layer from this starting face. The morphological results correspond to the silicon rough surface as a function of the crystallographic orientation showed the presence of two different substrate structure. The optical reflectivity results obtained of gold deposited on oxidized porous silicon showed a dependence of its Localized Surface Plasmon band frequency of the deposit time. SERS results, obtained for a dye target molecule (Rhodamine 6G), show a higher intensities in the case of the 〈110〉 orientation, which characterized by the higher roughness surface. Voici "the most relevant and important aspects of our work".

Aluminium alloyed iron-silicide/silicon solar cells: A simple approach for low cost environmental-friendly photovoltaic technology.

PubMed

Kumar Dalapati, Goutam; Masudy-Panah, Saeid; Kumar, Avishek; Cheh Tan, Cheng; Ru Tan, Hui; Chi, Dongzhi

2015-12-03

This work demonstrates the fabrication of silicide/silicon based solar cell towards the development of low cost and environmental friendly photovoltaic technology. A heterostructure solar cells using metallic alpha phase (α-phase) aluminum alloyed iron silicide (FeSi(Al)) on n-type silicon is fabricated with an efficiency of 0.8%. The fabricated device has an open circuit voltage and fill-factor of 240 mV and 60%, respectively. Performance of the device was improved by about 7 fold to 5.1% through the interface engineering. The α-phase FeSi(Al)/silicon solar cell devices have promising photovoltaic characteristic with an open circuit voltage, short-circuit current and a fill factor (FF) of 425 mV, 18.5 mA/cm(2), and 64%, respectively. The significant improvement of α-phase FeSi(Al)/n-Si solar cells is due to the formation p(+-)n homojunction through the formation of re-grown crystalline silicon layer (~5-10 nm) at the silicide/silicon interface. Thickness of the regrown silicon layer is crucial for the silicide/silicon based photovoltaic devices. Performance of the α-FeSi(Al)/n-Si solar cells significantly depends on the thickness of α-FeSi(Al) layer and process temperature during the device fabrication. This study will open up new opportunities for the Si based photovoltaic technology using a simple, sustainable, and los cost method.

Analysis of signals propagating in a phononic crystal PZT layer deposited on a silicon substrate.

PubMed

Hladky-Hennion, Anne-Christine; Vasseur, Jérôme; Dubus, Bertrand; Morvan, Bruno; Wilkie-Chancellier, Nicolas; Martinez, Loïc

2013-12-01

The design of a stop-band filter constituted by a periodically patterned lead zirconate titanate (PZT) layer, polarized along its thickness, deposited on a silicon substrate and sandwiched between interdigitated electrodes for emission/reception of guided elastic waves, is investigated. The filter characteristics are theoretically evaluated by using finite element simulations: dispersion curves of a patterned PZT layer with a specific pattern geometry deposited on a silicon substrate present an absolute stop band. The whole structure is modeled with realistic conditions, including appropriate interdigitated electrodes to propagate a guided mode in the piezoelectric layer. A robust method for signal analysis based on the Gabor transform is applied to treat transmitted signals; extract attenuation, group delays, and wave number variations versus frequency; and identify stop-band filter characteristics.

Manufacture of silicon-based devices having disordered sulfur-doped surface layers

DOEpatents

Carey, III; Edward, James [Newton, MA; Mazur, Eric [Concord, MA

2008-04-08

The present invention provides methods of fabricating a radiation-absorbing semiconductor wafer by irradiating at least one surface location of a silicon substrate, e.g., an n-doped crystalline silicon, by a plurality of temporally short laser pulses, e.g., femtosecond pulses, while exposing that location to a substance, e.g., SF.sub.6, having an electron-donating constituent so as to generate a substantially disordered surface layer (i.e., a microstructured layer) that incorporates a concentration of that electron-donating constituent, e.g., sulfur. The substrate is also annealed at an elevated temperature and for a duration selected to enhance the charge carrier density in the surface layer. For example, the substrate can be annealed at a temperature in a range of about 700 K to about 900 K.

Ultra-Shallow Depth Profiling of Arsenic Implants in Silicon by Hydride Generation-Inductively Coupled Plasma Atomic Emission Spectrometry

NASA Astrophysics Data System (ADS)

Matsubara, Atsuko; Kojima, Hisao; Itoga, Toshihiko; Kanehori, Keiichi

1995-08-01

High resolution depth profiling of arsenic (As) implanted into silicon wafers by a chemical technique is described. Silicon wafers are precisely etched through repeated oxidation by hydrogen peroxide solution and dissolution of the oxide by hydrofluoric acid solution. The etched silicon thickness is determined by inductively-coupled plasma atomic emission spectrometry (ICP-AES). Arsenic concentration is determined by hydride generation ICP-AES (HG-ICP-AES) with prereduction using potassium iodide. The detection limit of As in a 4-inch silicon wafer is 2.4×1018 atoms/cm3. The etched silicon thickness is controlled to less than 4±2 atomic layers. Depth profiling of an ultra-shallow As diffusion layer with the proposed method shows good agreement with profiling using the four-probe method or secondary ion mass spectrometry.

Platinum concentration in silicone breast implant material and capsular tissue by ICP-MS.

PubMed

Maharaj, S V M

2004-09-01

Inductively coupled plasma-mass spectrometry (ICP-MS) was used to determine the concentration of platinum (Pt) in silicone breast implant gel (range, 0.26-48.90 microg g(-1) Pt; n=15), elastomer (range, 3.05-28.78 microg g(-1) Pt; n=7), double lumen (range, 5.79-125.27 microg g(-1) Pt; n=7), foam (range, 5.79-8.36 microg g(-1) Pt; n=2), and capsular tissue (range, 0.003-0.272 microg g(-1) Pt; n=15). The results show that very high levels of Pt are present in the encasing elastomer, double lumen, and foam envelope materials. Silicone breast implants can be a source of significant Pt exposure for individuals with these implants.

Laser ablation of single-crystalline silicon by radiation of pulsed frequency-selective fiber laser

NASA Astrophysics Data System (ADS)

Veiko, V. P.; Skvortsov, A. M.; Huynh, C. T.; Petrov, A. A.

2015-07-01

We have studied the process of destruction of the surface of a single-crystalline silicon wafer scanned by the beam of a pulsed ytterbium-doped fiber laser radiation with a wavelength of λ = 1062 nm. It is established that the laser ablation can proceed without melting of silicon and the formation of a plasma plume. Under certain parameters of the process (radiation power, beam scan velocity, and beam overlap density), pronounced oxidation of silicon microparticles with the formation of a characteristic loose layer of fine powdered silicon dioxide has been observed for the first time. The range of lasing and beam scanning regimes in which the growth of SiO2 layer takes place is determined.

Direct Growth of Graphene on Silicon by Metal-Free Chemical Vapor Deposition

NASA Astrophysics Data System (ADS)

Tai, Lixuan; Zhu, Daming; Liu, Xing; Yang, Tieying; Wang, Lei; Wang, Rui; Jiang, Sheng; Chen, Zhenhua; Xu, Zhongmin; Li, Xiaolong

2018-06-01

The metal-free synthesis of graphene on single-crystal silicon substrates, the most common commercial semiconductor, is of paramount significance for many technological applications. In this work, we report the growth of graphene directly on an upside-down placed, single-crystal silicon substrate using metal-free, ambient-pressure chemical vapor deposition. By controlling the growth temperature, in-plane propagation, edge-propagation, and core-propagation, the process of graphene growth on silicon can be identified. This process produces atomically flat monolayer or bilayer graphene domains, concave bilayer graphene domains, and bulging few-layer graphene domains. This work would be a significant step toward the synthesis of large-area and layer-controlled, high-quality graphene on single-crystal silicon substrates. [Figure not available: see fulltext.

Method of making a ceramic with preferential oxygen reactive layer

NASA Technical Reports Server (NTRS)

Wang, Hongyu (Inventor); Luthra, Krishan Lal (Inventor)

2003-01-01

A method of forming an article. The method comprises forming a silicon-based substrate that is oxidizable by reaction with an oxidant to form at least one gaseous product and applying an intermediate layer/coating onto the substrate, wherein the intermediate layer/coating is oxidizable to a nongaseous product by reaction with the oxidant in preference to reaction of the silicon-containing substrate with the oxidant.

Formation of thin-film resistors on silicon substrates

DOEpatents

Schnable, George L.; Wu, Chung P.

1988-11-01

The formation of thin-film resistors by the ion implantation of a metallic conductive layer in the surface of a layer of phosphosilicate glass or borophosphosilicate glass which is deposited on a silicon substrate. The metallic conductive layer materials comprise one of the group consisting of tantalum, ruthenium, rhodium, platinum and chromium silicide. The resistor is formed and annealed prior to deposition of metal, e.g. aluminum, on the substrate.

Dopants Diffusion in Silicon during Molecular Oxygen/nitrogen Trifluoride Oxidation and Related Phenomena

NASA Astrophysics Data System (ADS)

Kim, U. S.

1990-01-01

To date, chlorine has been used as useful additives in silicon oxidation. However, rapid scaling of device dimensions motivates the development of a new dielectric layer or modification of the silicon dioxide itself. More recently, chemically enhanced thermal oxidation by the use of fluorine containing species has been introduced to verify the potential of fluorine in the silicon oxidation process. In this study, gaseous nitrogen trifluoride (NF _3) was selected as the fluorine oxidizing source based on ease of use and was compared with the dichlorofluoroethane (C_2H _3Cl_2F) source. Two different kinds of boron marker samples were prepared and oxidized in O_2/NF_3 ambient for the comparison of surface vs bulk oxidation enhanced/retarded diffusion (OED/ORD). The phosphorus, arsenic and antimony diffusion in silicon during fluorine oxidation has been studied using the various covering layers such as SiO_2, Si_3 N_4, and SiO_2 + Si_3N_4 layers. The oxidation related phenomena, i.e. enhanced silicon and silicon nitride oxidation in fluorine ambient were studied and correlated with the point defect balance at the oxidizing interface. The results of this investigation were discussed with special emphasis on the effect of fluorine on enhanced oxidation and dopant diffusion.

Characterization of Si (sub X)Ge (sub 1-x)/Si Heterostructures for Device Applications Using Spectroscopic Ellipsometry

NASA Technical Reports Server (NTRS)

Sieg, R. M.; Alterovitz, S. A.; Croke, E. T.; Harrell, M. J.; Tanner, M.; Wang, K. L.; Mena, R. A.; Young, P. G.

1993-01-01

Spectroscopic ellipsometry (SE) characterization of several complex Si (sub X)Ge (sub 1-x)/Si heterostructures prepared for device fabrication, including structures for heterojunction bipolar transistors (HBT), p-type and n-type heterostructure modulation doped field effect transistors, has been performed. We have shown that SE can simultaneously determine all active layer thicknesses, Si (sub X)Ge (sub 1-x) compositions, and the oxide overlayer thickness, with only a general knowledge of the structure topology needed a priori. The characterization of HBT material included the SE analysis of a Si (sub X)Ge (sub 1-x) layer deeply buried (600 nanometers) under the silicon emitter and cap layers. In the SE analysis of n-type heterostructures, we examined for the first time a silicon layer under tensile strain. We found that an excellent fit can be obtained using optical constants of unstrained silicon to represent the strained silicon conduction layer. We also used SE to measure lateral sample homogeneity, providing quantitative identification of the inhomogeneous layer. Surface overlayers resulting from prior sample processing were also detected and measured quantitatively. These results should allow SE to be used extensively as a non-destructive means of characterizing Si (sub X)Ge (sub 1-x)/Si heterostructures prior to device fabrication and testing.

Light Absorption Enhancement of Silicon-Based Photovoltaic Devices with Multiple Bandgap Structures of Porous Silicon

PubMed Central

Wu, Kuen-Hsien; Li, Chong-Wei

2015-01-01

Porous-silicon (PS) multi-layered structures with three stacked PS layers of different porosity were prepared on silicon (Si) substrates by successively tuning the electrochemical-etching parameters in an anodization process. The three PS layers have different optical bandgap energy and construct a triple-layered PS (TLPS) structure with multiple bandgap energy. Photovoltaic devices were fabricated by depositing aluminum electrodes of Schottky contacts on the surfaces of the developed TLPS structures. The TLPS-based devices exhibit broadband photoresponses within the spectrum of the solar irradiation and get high photocurrent for the incident light of a tungsten lamp. The improved spectral responses of devices are owing to the multi-bandgap structures of TLPS, which are designed with a layered configuration analog to a tandem cell for absorbing a wider energy range of the incidental sun light. The large photocurrent is mainly ascribed to an enhanced light-absorption ability as a result of applying nanoporous-Si thin films as the surface layers to absorb the short-wavelength light and to improve the Schottky contacts of devices. Experimental results reveal that the multi-bandgap PS structures produced from electrochemical-etching of Si wafers are potentially promising for development of highly efficient Si-based solar cells. PMID:28793542

Tribological Behavior of Al-Cr Coating Obtained by Dgpsm and IIP Composite Technology

NASA Astrophysics Data System (ADS)

Luo, Xixi; Yao, Zhengjun; Zhang, Pingze; Zhou, Keyin; Chen, Yu; Tao, Xuewei

An Al-Cr composite alloyed layer composed of an Al enriched layer, a Cr enriched layer and a transition layer from the surface to the bulk along the cross-section was deposited on a 45# steel substrate by composite technology, where Cr was deposited using double glow plasma surface metallurgy (DGPSM), and Al was then implanted by ion implantation (IIP) to achieve higher micro-hardness and excellent abrasive resistance. The composite alloyed layer is approximately 5μm, and as metallurgical adherence to the substrate. The phases are Al8Cr5, Fe2AlCr, Cr23C6, Cr (Al) and Fe (Cr, Al) solid solution. The wear resistance tests were performed under various rotational speed (i.e. 280, 560 and 840r/min) with silicon nitride balls as the counterface material at ambient temperature. The Al-Cr composite alloyed layer exhibits excellent wear resistance when the speed is 280r/min with a friction coefficient as low as 0.3, which is attributed to Al8Cr5 in the Al implanted layer that withstands abrasive wear. Better wear resistance (friction coefficient: 0.254) at 560r/min is resulted from the formation of a high micro-hardness zone, and an oxidation layer with lubrication capacity. In addition, the composite alloyed layer suffers severe oxidative wear and adhesive wear at 840r/min due to the increment of the frictional heating. When compared to the 45# steel substrate, the enhanced wear resistance of the Al-Cr composite alloyed layer demonstrates the viable method developed in this work.

Multi-junction solar cell device

DOEpatents

Friedman, Daniel J.; Geisz, John F.

2007-12-18

A multi-junction solar cell device (10) is provided. The multi-junction solar cell device (10) comprises either two or three active solar cells connected in series in a monolithic structure. The multi-junction device (10) comprises a bottom active cell (20) having a single-crystal silicon substrate base and an emitter layer (23). The multi-junction device (10) further comprises one or two subsequent active cells each having a base layer (32) and an emitter layer (23) with interconnecting tunnel junctions between each active cell. At least one layer that forms each of the top and middle active cells is composed of a single-crystal III-V semiconductor alloy that is substantially lattice-matched to the silicon substrate (22). The polarity of the active p-n junction cells is either p-on-n or n-on-p. The present invention further includes a method for substantially lattice matching single-crystal III-V semiconductor layers with the silicon substrate (22) by including boron and/or nitrogen in the chemical structure of these layers.

Inversion layer solar cell fabrication and evaluation. [measurement of response of inversion layer solar cell to light of different wavelengths

NASA Technical Reports Server (NTRS)

Call, R. L.

1973-01-01

Silicon solar cells operating with induced junctions rather than diffused junctions have been fabricated and tested. Induced junctions were created by forming an inversion layer near the surface of the silicon by supplying a sheet of positive charge above the surface. This charged layer was supplied through three mechanisms: (1) applying a positive potential to a transparent electrode separated from the silicon surface by a dielectric, (2) contaminating the oxide layer with positive ions, and (3) forming donor surface states that leave a positive charge on the surface. A movable semi-infinite shadow delineated the extent of sensitivity of the cell due to the inversion region. Measurements of the response of the inversion layer cell to light of different wavelengths indicated it to be more sensitive to the shorter wavelengths of the sun's spectrum than conventional cells. The greater sensitivity occurs because of the shallow junction and the strong electric field at the surface.

Pyrolytic carbon-coated nuclear fuel

DOEpatents

Lindemer, Terrence B.; Long, Jr., Ernest L.; Beatty, Ronald L.

1978-01-01

An improved nuclear fuel kernel having at least one pyrolytic carbon coating and a silicon carbon layer is provided in which extensive interaction of fission product lanthanides with the silicon carbon layer is avoided by providing sufficient UO.sub.2 to maintain the lanthanides as oxides during in-reactor use of said fuel.

Design and Characterization of a Photometer-Colorimeter Standard

NASA Astrophysics Data System (ADS)

Eppeldauer, George P.; Rácz, Miklós

2004-05-01

A photometer and tristimulus colorimeter has been developed at the National Institute of Standards and Technology (NIST) to realize a color scale. A novel construction was developed to implement the spectral-responsivity-based scale with small uncertainty. The new device can be used as a reference illuminance and luminance meter as well. Temperature-controlled filter combinations, with 5-8 layers in one package, are used to match the responsivity of a silicon tunnel-trap detector to the CIE color-matching functions with small spectral mismatch values (f1'). Design considerations to extend the tunnel-trap detector with replaceable single and double apertures and changeable filter combinations are described. The design and fabrication of the filter packages and the dependence of the f1' values on the thickness of the filter layers are discussed. The colorimeter was characterized for angular, spatial, and spectral responsivity. An improved preamplifier can convert current to voltage in an 11-decade dynamic range with 0.01% uncertainty.

Design and characterization of a photometer-colorimeter standard.

PubMed

Eppeldauer, George P; Rácz, Miklós

2004-05-01

A photometer and tristimulus colorimeter has been developed at the National Institute of Standards and Technology (NIST) to realize a color scale. A novel construction was developed to implement the spectral-responsivity-based scale with small uncertainty. The new device can be used as a reference illuminance and luminance meter as well. Temperature-controlled filter combinations, with 5-8 layers in one package, are used to match the responsivity of a silicon tunnel-trap detector to the CIE color-matching functions with small spectral mismatch values (f1'). Design considerations to extend the tunnel-trap detector with replaceable single and double apertures and changeable filter combinations are described. The design and fabrication of the filter packages and the dependence of the f1' values on the thickness of the filter layers are discussed. The colorimeter was characterized for angular, spatial, and spectral responsivity. An improved preamplifier can convert current to voltage in an 11-decade dynamic range with 0.01% uncertainty.

Producing thin film photovoltaic modules with high integrity interconnects and dual layer contacts

DOEpatents

Jansen, Kai W.; Maley, Nagi

2000-01-01

High performance photovoltaic modules are produced with improved interconnects by a special process. Advantageously, the photovoltaic modules have a dual layer back (rear) contact and a front contact with at least one layer. The front contact and the inner layer of the back contact can comprise a transparent conductive oxide. The outer layer of the back contact can comprise a metal or metal oxide. The front contact can also have a dielectric layer. In one form, the dual layer back contact comprises a zinc oxide inner layer and an aluminum outer layer and the front contact comprises a tin oxide inner layer and a silicon dioxide dielectric outer layer. One or more amorphous silicon-containing thin film semiconductors can be deposited between the front and back contacts. The contacts can be positioned between a substrate and an optional superstrate. During production, the transparent conductive oxide layer of the front contact is scribed by a laser, then the amorphous silicon-containing semiconductors and inner layer of the dual layer back contact are simultaneously scribed and trenched (drilled) by the laser and the trench is subsequently filled with the same metal as the outer layer of the dual layer back contact to provide a superb mechanical and electrical interconnect between the front contact and the outer layer of the dual layer back contact. The outer layer of the dual layer back contact can then be scribed by the laser. For enhanced environmental protection, the photovoltaic modules can be encapsulated.

Producing thin film photovoltaic modules with high integrity interconnects and dual layer contacts

DOEpatents

Jansen, Kai W.; Maley, Nagi

2001-01-01

High performance photovoltaic modules are produced with improved interconnects by a special process. Advantageously, the photovoltaic modules have a dual layer back (rear) contact and a front contact with at least one layer. The front contact and the inner layer of the back contact can comprise a transparent conductive oxide. The outer layer of the back contact can comprise a metal or metal oxide. The front contact can also have a dielectric layer. In one form, the dual layer back contact comprises a zinc oxide inner layer and an aluminum outer layer and the front contact comprises a tin oxide inner layer and a silicon dioxide dielectric outer layer. One or more amorphous silicon-containing thin film semiconductors can be deposited between the front and back contacts. The contacts can be positioned between a substrate and an optional superstrate. During production, the transparent conductive oxide layer of the front contact is scribed by a laser, then the amorphous silicon-containing semiconductors and inner layer of the dual layer back contact are simultaneously scribed and trenched (drilled) by the laser and the trench is subsequently filled with the same metal as the outer layer of the dual layer back contact to provide a superb mechanical and electrical interconnect between the front contact and the outer layer of the dual layer back contact. The outer layer of the dual layer back contact can then be scribed by the laser. For enhanced environmental protection, the photovoltaic modules can be encapsulated.

Transition from single to multiple double layers. [of plasma

NASA Technical Reports Server (NTRS)

Chan, C.; Hershkowitz, N.

1982-01-01

Laboratory results are presented to define parameters which allow the boundary conditions to control the characteristics of double layers of plasma. It is shown that multiple double layers arise when the ratio of Debye length to system length decreases, a result which is in line with boundary layer theory. The significance of inclusion of the system length is noted to render BGK treatments of double layers, wherein the length is neglected, invalid.

Laser ablation mechanism of transparent layers on semiconductors with ultrashort laser pulses

NASA Astrophysics Data System (ADS)

Rublack, Tino; Hartnauer, Stefan; Mergner, Michael; Muchow, Markus; Seifert, Gerhard

2011-12-01

Transparent dielectric layers on semiconductors are used as anti-reflection coatings both for photovoltaic applications and for mid-infrared optical elements. We have shown recently that selective ablation of such layers is possible using ultrashort laser pulses at wavelengths being absorbed by the semiconductor. To get a deeper understanding of the ablation mechanism, we have done ablation experiments for different transparent materials, in particular SiO2 and SixNy on silicon, using a broad range of wavelengths ranging from UV to IR, and pulse durations between 50 and 2000 fs. The characterization of the ablated regions was done by light microscopy and atomic force microscopy (AFM). Utilizing laser wavelengths above the silicon band gap, selective ablation of the dielectric layer without noticeable damage of the opened silicon surface is possible. In contrast, ultrashort pulses (1-2 ps) at mid-infrared wavelengths already cause damage in the silicon at lower intensities than in the dielectric layer, even when a vibrational resonance (e.g. at λ = 9.26 μm for SiO2) is addressed. The physical processes behind this, on the first glance counterintuitive, observation will be discussed.

Nitrogen doped silicon-carbon multilayer protective coatings on carbon obtained by TVA method

NASA Astrophysics Data System (ADS)

Ciupina, Victor; Vasile, Eugeniu; Porosnicu, Corneliu; Lungu, Cristian P.; Vladoiu, Rodica; Jepu, Ionut; Mandes, Aurelia; Dinca, Virginia; Caraiane, Aureliana; Nicolescu, Virginia; Cupsa, Ovidiu; Dinca, Paul; Zaharia, Agripina

2017-08-01

Protective nitrogen doped Si-C multilayer coatings on carbon, used to improve the oxidation resistance of carbon, were obtained by Thermionic Vacuum Arc (TVA) method. The initial carbon layer having a thickness of 100nm has been deposed on a silicon substrate in the absence of nitrogen, and then a 3nm Si thin film to cover carbon layer was deposed. Further, seven Si and C layers were alternatively deposed in the presence of nitrogen ions, each having a thickness of 40nm. In order to form silicon carbide at the interface between silicon and carbon layers, all carbon, silicon and nitrogen ions energy has increased up to 150eV . The characterization of microstructure and electrical properties of as-prepared N-Si-C multilayer structures were done using Transmission Electron Microscopy (TEM, STEM) techniques, Thermal Desorption Spectroscopy (TDS) and electrical measurements. Oxidation protection of carbon is based on the reaction between oxygen and silicon carbide, resulting in SiO2, SiO and CO2, and also by reaction involving N, O and Si, resulting in silicon oxynitride (SiNxOy) with a continuously variable composition, and on the other hand, since nitrogen acts as a trapping barrier for oxygen. To perform electrical measurements, 80% silver filled two-component epoxy-based glue ohmic contacts were attached on the N-Si-C samples. Electrical conductivity was measured in constant current mode. The experimental data show the increase of conductivity with the increase of the nitrogen content. To explain the temperature behavior of electrical conductivity we assumed a thermally activated electric transport mechanism.

Effects of oxygen-inserted layers on diffusion of boron, phosphorus, and arsenic in silicon for ultra-shallow junction formation

NASA Astrophysics Data System (ADS)

Zhang, X.; Connelly, D.; Takeuchi, H.; Hytha, M.; Mears, R. J.; Rubin, L. M.; Liu, T.-J. K.

2018-03-01

The effects of oxygen-inserted (OI) layers on the diffusion of boron (B), phosphorus (P), and arsenic (As) in silicon (Si) are investigated, for ultra-shallow junction formation by high-dose ion implantation followed by rapid thermal annealing. The projected range (Rp) of the implanted dopants is shallower than the depth of the OI layers. Secondary ion mass spectrometry is used to compare the dopant profiles in silicon samples that have OI layers against the dopant profiles in control samples that do not have OI layers. Diffusion is found to be substantially retarded by the OI layers for B and P, and less for As, providing shallower junction depth. The experimental results suggest that the OI layers serve to block the diffusion of Si self-interstitials and thereby effectively reduce interstitial-aided diffusion beyond the depth of the OI layers. The OI layers also help to retain more dopants within the Si, which technology computer-aided design simulations indicate to be beneficial for achieving shallower junctions with lower sheet resistance to enable further miniaturization of planar metal-oxide-semiconductor field-effect transistors for improved integrated-circuit performance and cost per function.

Influence of the charge double layer on solid oxide fuel cell stack behavior

NASA Astrophysics Data System (ADS)

Whiston, Michael M.; Bilec, Melissa M.; Schaefer, Laura A.

2015-10-01

While the charge double layer effect has traditionally been characterized as a millisecond phenomenon, longer timescales may be possible under certain operating conditions. This study simulates the dynamic response of a previously developed solid oxide fuel cell (SOFC) stack model that incorporates the charge double layer via an equivalent circuit. The model is simulated under step load changes. Baseline conditions are first defined, followed by consideration of minor and major deviations from the baseline case. This study also investigates the behavior of the SOFC stack with a relatively large double layer capacitance value, as well as operation of the SOFC stack under proportional-integral (PI) control. Results indicate that the presence of the charge double layer influences the SOFC stack's settling time significantly under the following conditions: (i) activation and concentration polarizations are significantly increased, or (ii) a large value of the double layer capacitance is assumed. Under normal (baseline) operation, on the other hand, the charge double layer effect diminishes within milliseconds, as expected. It seems reasonable, then, to neglect the charge double layer under normal operation. However, careful consideration should be given to potential variations in operation or material properties that may give rise to longer electrochemical settling times.

Ultrasonic Emission from Nanocrystalline Porous Silicon

NASA Astrophysics Data System (ADS)

Shinoda, Hiroyuki; Koshida, Nobuyoshi

A simple layer structure composed of a metal thin film and a porous silicon layer on a silicon substrate generates intense and wide-band airborne ultrasounds. The large-bandwidth and the fidelity of the sound reproduction are leveraged in applications varying from sound-based measurement to a scientific study of animal ecology. This chapter describes the basic principle of the ultrasound generation. The macroscopic properties of the low thermal conductivity and the small heat capacity of nanocrystalline porous silicon thermally induce ultrasonic emission. The state-of-the-art of the achievable sound pressure and sound signal properties is introduced, with the technological and scientific applications of the devices.

Modeling electrical double-layer effects for microfluidic impedance spectroscopy from 100 kHz to 110 GHz.

PubMed

Little, Charles A E; Orloff, Nathan D; Hanemann, Isaac E; Long, Christian J; Bright, Victor M; Booth, James C

2017-07-25

Broadband microfluidic-based impedance spectroscopy can be used to characterize complex fluids, with applications in medical diagnostics and in chemical and pharmacological manufacturing. Many relevant fluids are ionic; during impedance measurements ions migrate to the electrodes, forming an electrical double-layer. Effects from the electrical double-layer dominate over, and reduce sensitivity to, the intrinsic impedance of the fluid below a characteristic frequency. Here we use calibrated measurements of saline solution in microfluidic coplanar waveguide devices at frequencies between 100 kHz and 110 GHz to directly measure the double-layer admittance for solutions of varying ionic conductivity. We successfully model the double-layer admittance using a combination of a Cole-Cole response with a constant phase element contribution. Our analysis yields a double-layer relaxation time that decreases linearly with solution conductivity, and allows for double-layer effects to be separated from the intrinsic fluid response and quantified for a wide range of conducting fluids.

Polyelectrolyte multilayer-assisted fabrication of non-periodic silicon nanocolumn substrates for cellular interface applications

NASA Astrophysics Data System (ADS)

Lee, Seyeong; Kim, Dongyoon; Kim, Seong-Min; Kim, Jeong-Ah; Kim, Taesoo; Kim, Dong-Yu; Yoon, Myung-Han

2015-08-01

Recent advances in nanostructure-based biotechnology have resulted in a growing demand for vertical nanostructure substrates with elaborate control over the nanoscale geometry and a high-throughput preparation. In this work, we report the fabrication of non-periodic vertical silicon nanocolumn substrates via polyelectrolyte multilayer-enabled randomized nanosphere lithography. Owing to layer-by-layer deposited polyelectrolyte adhesives, uniformly-separated polystyrene nanospheres were securely attached on large silicon substrates and utilized as masks for the subsequent metal-assisted silicon etching in solution. Consequently, non-periodic vertical silicon nanocolumn arrays were successfully fabricated on a wafer scale, while each nanocolumn geometric factor, such as the diameter, height, density, and spatial patterning, could be fully controlled in an independent manner. Finally, we demonstrate that our vertical silicon nanocolumn substrates support viable cell culture with minimal cell penetration and unhindered cell motility due to the blunt nanocolumn morphology. These results suggest that vertical silicon nanocolumn substrates may serve as a useful cellular interface platform for performing a statistically meaningful number of cellular experiments in the fields of biomolecular delivery, stem cell research, etc.Recent advances in nanostructure-based biotechnology have resulted in a growing demand for vertical nanostructure substrates with elaborate control over the nanoscale geometry and a high-throughput preparation. In this work, we report the fabrication of non-periodic vertical silicon nanocolumn substrates via polyelectrolyte multilayer-enabled randomized nanosphere lithography. Owing to layer-by-layer deposited polyelectrolyte adhesives, uniformly-separated polystyrene nanospheres were securely attached on large silicon substrates and utilized as masks for the subsequent metal-assisted silicon etching in solution. Consequently, non-periodic vertical silicon nanocolumn arrays were successfully fabricated on a wafer scale, while each nanocolumn geometric factor, such as the diameter, height, density, and spatial patterning, could be fully controlled in an independent manner. Finally, we demonstrate that our vertical silicon nanocolumn substrates support viable cell culture with minimal cell penetration and unhindered cell motility due to the blunt nanocolumn morphology. These results suggest that vertical silicon nanocolumn substrates may serve as a useful cellular interface platform for performing a statistically meaningful number of cellular experiments in the fields of biomolecular delivery, stem cell research, etc. Electronic supplementary information (ESI) available. See DOI: 10.1039/c5nr02384j

EPITAXIAL GROWTH OF SILICON

DTIC Science & Technology

Epitaxial growth of silicon on a silicon substrate by hydrogen reduction of SiCl4 was investigated. The chemical and physical processes involved in...silicon layers were produced at temperatures between 1100 and 1300 C. The effects of the concentration of SiCl4 in H2, the flow rate of the gas, the

Selective layer disordering in intersubband Al 0.028Ga 0.972 N/AlN superlattices with silicon nitride capping layer

DOE PAGES

Wierer, Jonathan J.; Allerman, Andrew A.; Skogen, Erik J.; ...

2015-06-01

We demonstrate the selective layer disordering in intersubband Al 0.028Ga 0.972 N/AlN superlattices using a silicon nitride (SiN x) capping layer. The (SiN x) capped superlattice exhibits suppressed layer disordering under high-temperature annealing. In addition, the rate of layer disordering is reduced with increased SiN x thickness. The layer disordering is caused by Si diffusion, and the SiN x layer inhibits vacancy formation at the crystal surface and ultimately, the movement of Al and Ga atoms across the heterointerfaces. In conclusion, patterning of the SiN x layer results in selective layer disordering, an attractive method to integrate active and passivemore » III–nitride-based intersubband devices.« less

Nonlocal Poisson-Fermi double-layer models: Effects of nonuniform ion sizes on double-layer structure

NASA Astrophysics Data System (ADS)

Xie, Dexuan; Jiang, Yi

2018-05-01

This paper reports a nonuniform ionic size nonlocal Poisson-Fermi double-layer model (nuNPF) and a uniform ionic size nonlocal Poisson-Fermi double-layer model (uNPF) for an electrolyte mixture of multiple ionic species, variable voltages on electrodes, and variable induced charges on boundary segments. The finite element solvers of nuNPF and uNPF are developed and applied to typical double-layer tests defined on a rectangular box, a hollow sphere, and a hollow rectangle with a charged post. Numerical results show that nuNPF can significantly improve the quality of the ionic concentrations and electric fields generated from uNPF, implying that the effect of nonuniform ion sizes is a key consideration in modeling the double-layer structure.

Dynamical features and electric field strengths of double layers driven by currents. [in auroras

NASA Technical Reports Server (NTRS)

Singh, N.; Thiemann, H.; Schunk, R. W.

1985-01-01

In recent years, a number of papers have been concerned with 'ion-acoustic' double layers. In the present investigation, results from numerical simulations are presented to show that the shapes and forms of current-driven double layers evolve dynamically with the fluctuations in the current through the plasma. It is shown that double layers with a potential dip can form even without the excitation of ion-acoustic modes. Double layers in two-and one-half-dimensional simulations are discussed, taking into account the simulation technique, the spatial and temporal features of plasma, and the dynamical behavior of the parallel potential distribution. Attention is also given to double layers in one-dimensional simulations, and electrical field strengths predicted by two-and one-half-dimensional simulations.

Low-damage direct patterning of silicon oxide mask by mechanical processing

PubMed Central

2014-01-01

To realize the nanofabrication of silicon surfaces using atomic force microscopy (AFM), we investigated the etching of mechanically processed oxide masks using potassium hydroxide (KOH) solution. The dependence of the KOH solution etching rate on the load and scanning density of the mechanical pre-processing was evaluated. Particular load ranges were found to increase the etching rate, and the silicon etching rate also increased with removal of the natural oxide layer by diamond tip sliding. In contrast, the local oxide pattern formed (due to mechanochemical reaction of the silicon) by tip sliding at higher load was found to have higher etching resistance than that of unprocessed areas. The profile changes caused by the etching of the mechanically pre-processed areas with the KOH solution were also investigated. First, protuberances were processed by diamond tip sliding at lower and higher stresses than that of the shearing strength. Mechanical processing at low load and scanning density to remove the natural oxide layer was then performed. The KOH solution selectively etched the low load and scanning density processed area first and then etched the unprocessed silicon area. In contrast, the protuberances pre-processed at higher load were hardly etched. The etching resistance of plastic deformed layers was decreased, and their etching rate was increased because of surface damage induced by the pre-processing. These results show that etching depth can be controlled by controlling the etching time through natural oxide layer removal and mechanochemical oxide layer formation. These oxide layer removal and formation processes can be exploited to realize low-damage mask patterns. PMID:24948891

Use of XPS to clarify the Hall coefficient sign variation in thin niobium layers buried in silicon

NASA Astrophysics Data System (ADS)

Demchenko, Iraida N.; Lisowski, Wojciech; Syryanyy, Yevgen; Melikhov, Yevgen; Zaytseva, Iryna; Konstantynov, Pavlo; Chernyshova, Maryna; Cieplak, Marta Z.

2017-03-01

Si/Nb/Si trilayers formed with 9.5 and 1.3 nm thick niobium layer buried in amorphous silicon were prepared by magnetron sputtering and studied using XPS depth-profile techniques in order to investigate the change of Hall coefficient sign with thickness. The analysis of high-resolution (HR) XPS spectra revealed that the thicker layer sample has sharp top interface and metallic phase of niobium, thus holes dominate the transport. In contrast, the analysis indicates that the thinner layer sample has a Nb-rich mixed alloy formation at the top interface. The authors suggest that the main effect leading to a change of sign of the Hall coefficient for the thinner layer sample (which is negative contrary to the positive sign for the thicker layer sample) may be related to strong boundary scattering enhanced by the presence of silicon ions in the layer close to the interface/s. The depth-profile reconstruction was performed by SESSA software tool confirming that it can be reliably used for quantitative analysis/interpretation of experimental XPS data.

Crustal flow at the margin of high plateaux: A lithospheric-scale experimental approach

NASA Astrophysics Data System (ADS)

Bajolet, Flora; Chardon, Dominique; Gapais, Denis; Martinod, Joseph; Kermarrec, Jean-Jacques

2010-05-01

A serie of analogue models was performed in order to explore the mechanisms of exhumation of high grade rocks at the margin of high plateaux. Experiments are scaled for gravity and simulate convergence between a hot, weak and thin lithosphere lacking a resistant mantle layer (high plateau, HP) and a cold and thick cratonic lithosphere (CL). The HP consists in a three-layer crust made of a low-viscosity silicone simulating partially molten lower crust (PMLC), overlaid by a medium-viscosity silicone simulating the middle crust, and a thin sand layer modelling the brittle upper crust. The CL is made of three layers, from bottom to top: a high-viscosity silicone (resistant mantle layer), a medium-viscosity silicone (lower crust) and a sand layer (upper crust). The model lithospheres float on a low-viscosity and dense solution of sodium polytungstate, simulating the asthenosphere. A set of laterally constrained experiments was run by changing the velocity of convergence, and the strength / thickness of the layers, to explore various degrees of coupling amongst lithospheric layers and between the two lithospheres. Several sets of experiments with comparable parameters were performed and stopped at different amounts of shortening, then frozen and cut for observation on serial cross-sections. For all experiments, the same kinematic scenario occurs. First, shortening affects preferentially the HP. Shortening proceeds by homogeneous thickening of the entire ductile crust and the formation of pop-downs of upper brittle crust after preferential development of HP-verging thrust faults. The crust rapidly acquired a double thickness under the HP, whereas the inner parts of the CL became moderately thickened as a continental subduction of CL mantle initiates under the HP. The part of the PMLC in contact with the CL starts to form a CL-verging antiform evolving into a wedge-shaped channel being injected into the lower crust of the CL. The channel is exhumed by slip along the reverse shear zone acting as the ramp accommodating subduction of the CL mantle below the HP. Injection of PMLC induces far field horizontal displacements of lower crust of the CL towards the foreland. The main foreland-verging thrusts affecting the CL form at that time. After a certain amount of injection and amplification, the roof of the antiform is horizontally sheared backward (i.e., toward the HP) along a flat shear zone whose upper wall coincides with the brittle-ductile transition. This shear zone emerges as the latest back thrust developed in the model, which bounds the outermost pop-down formed in the HP. These results suggest the amplification of a domal antiform resulting in injection of a non-cylindrical channel of PMLC from under HP into the crust of the CL, producing large finite exhumation of the PMLC even in the absence of erosion at the margin of HP. Erosion would favour greater exhumation ending with the formation of a dome of PMLC at the surface, accompanied by back tilting (and consecutive reorganization) of the flat shear zone accommodating return flow of mid/upper crust toward the HP above the channel. Analogy with the Himalayan-Tibet orogen suggests the South Tibetan detachment system may result from such a late reorganization in the exhumation of the Higher Himalaya Crystalline. The experiments provide constraints on the initiation stages of crustal flow at the margin of HP and may allow refining the channel flow model.

Study Trapped Charge Distribution in P-Channel Silicon-Oxide-Nitride-Oxide-Silicon Memory Device Using Dynamic Programming Scheme

NASA Astrophysics Data System (ADS)

Li, Fu-Hai; Chiu, Yung-Yueh; Lee, Yen-Hui; Chang, Ru-Wei; Yang, Bo-Jun; Sun, Wein-Town; Lee, Eric; Kuo, Chao-Wei; Shirota, Riichiro

2013-04-01

In this study, we precisely investigate the charge distribution in SiN layer by dynamic programming of channel hot hole induced hot electron injection (CHHIHE) in p-channel silicon-oxide-nitride-oxide-silicon (SONOS) memory device. In the dynamic programming scheme, gate voltage is increased as a staircase with fixed step amplitude, which can prohibits the injection of holes in SiN layer. Three-dimensional device simulation is calibrated and is compared with the measured programming characteristics. It is found, for the first time, that the hot electron injection point quickly traverses from drain to source side synchronizing to the expansion of charged area in SiN layer. As a result, the injected charges quickly spread over on the almost whole channel area uniformly during a short programming period, which will afford large tolerance against lateral trapped charge diffusion by baking.

Metallic atomically-thin layered silicon epitaxially grown on silicene/ZrB 2

DOE PAGES

Gill, Tobias G.; Fleurence, Antoine; Warner, Ben; ...

2017-02-17

We observe a new two-dimensional (2D) silicon crystal, using low energy electron diffraction (LEED) and scanning tunnelling microscopy (STM) and it's formed by depositing additional Si atoms onto spontaneously-formed epitaxial silicene on a ZrB 2 thin film. From scanning tunnelling spectroscopy (STS) studies, we find that this atomically-thin layered silicon has distinctly different electronic properties. Angle resolved photoelectron spectroscopy (ARPES) reveals that, in sharp contrast to epitaxial silicene, the layered silicon exhibits significantly enhanced density of states at the Fermi level resulting from newly formed metallic bands. Furthermore, the 2D growth of this material could allow for direct contacting tomore » the silicene surface and demonstrates the dramatic changes in electronic structure that can occur by the addition of even a single monolayer amount of material in 2D systems.« less

Fabrication and Modification of Nanoporous Silicon Particles

NASA Technical Reports Server (NTRS)

Ferrari, Mauro; Liu, Xuewu

2010-01-01

Silicon-based nanoporous particles as biodegradable drug carriers are advantageous in permeation, controlled release, and targeting. The use of biodegradable nanoporous silicon and silicon dioxide, with proper surface treatments, allows sustained drug release within the target site over a period of days, or even weeks, due to selective surface coating. A variety of surface treatment protocols are available for silicon-based particles to be stabilized, functionalized, or modified as required. Coated polyethylene glycol (PEG) chains showed the effective depression of both plasma protein adsorption and cell attachment to the modified surfaces, as well as the advantage of long circulating. Porous silicon particles are micromachined by lithography. Compared to the synthesis route of the nanomaterials, the advantages include: (1) the capability to make different shapes, not only spherical particles but also square, rectangular, or ellipse cross sections, etc.; (2) the capability for very precise dimension control; (3) the capacity for porosity and pore profile control; and (4) allowance of complex surface modification. The particle patterns as small as 60 nm can be fabricated using the state-of-the-art photolithography. The pores in silicon can be fabricated by exposing the silicon in an HF/ethanol solution and then subjecting the pores to an electrical current. The size and shape of the pores inside silicon can be adjusted by the doping of the silicon, electrical current application, the composition of the electrolyte solution, and etching time. The surface of the silicon particles can be modified by many means to provide targeted delivery and on-site permanence for extended release. Multiple active agents can be co-loaded into the particles. Because the surface modification of particles can be done on wafers before the mechanical release, asymmetrical surface modification is feasible. Starting from silicon wafers, a treatment, such as KOH dipping or reactive ion etching (RIE), may be applied to make the surface rough. This helps remove the nucleation layer. A protective layer is then deposited on the wafer. The protective layer, such as silicon nitride film or photoresist film, protects the wafer from electrochemical etching in an HF-based solution. A lithography technique is applied to pattern the particles onto the protective film. The undesired area of the protective film is removed, and the protective film on the back side of the wafer is also removed. Then the pattern is exposed to HF/surfactant solution, and a larger DC electrical current is applied to the wafers for a selected time. This step removes the nucleation layer. Then a DC current is applied to generate the nanopores. Next, a large electrical current is applied to generate a release layer. The particles are mechanically suspended in the solvent and collected by filtration or centrifuge.

The automated array assembly task of the low-cost silicon solar array project, phase 2

NASA Technical Reports Server (NTRS)

Coleman, M. G.; Pryor, R. A.; Sparks, T. G.; Legge, R.; Saltzman, D. L.

1980-01-01

Several specific processing steps as part of a total process sequence for manufacturing silicon solar cells were studied. Ion implantation was identified as the preferred process step for impurity doping. Unanalyzed beam ion implantation was shown to have major cost advantages over analyzed beam implantation. Further, high quality cells were fabricated using a high current unanalyzed beam. Mechanically masked plasma patterning of silicon nitride was shown to be capable of forming fine lines on silicon surfaces with spacings between mask and substrate as great as 250 micrometers. Extensive work was performed on advances in plated metallization. The need for the thick electroless palladium layer was eliminated. Further, copper was successfully utilized as a conductor layer utilizing nickel as a barrier to copper diffusion into the silicon. Plasma etching of silicon for texturing and saw damage removal was shown technically feasible but not cost effective compared to wet chemical etching techniques.

Silicon on Ceramic Process: Silicon Sheet Growth and Device Development for the Large-area Silicon Sheet and Cell Development Tasks of the Low-cost Solar Array Project

NASA Technical Reports Server (NTRS)

Chapman, P. W.; Zook, J. D.; Heaps, J. D.; Pickering, C.; Grung, B. L.; Koepke, B.; Schuldt, S. B.

1979-01-01

The technical and economic feasibility of producing solar cell quality sheet silicon was investigated. It was hoped this could be done by coating one surface of carbonized ceramic substrates with a thin layer of large-grain polycrystalline silicon from the melt. Work was directed towards the solution of unique cell processing/design problems encountered with the silicon-ceramic (SOC) material due to its intimate contact with the ceramic substrate. Significant progress was demonstrated in the following areas; (1) the continuous coater succeeded in producing small-area coatings exhibiting unidirectional solidification and substatial grain size; (2) dip coater succeeded in producing thick (more than 500 micron) dendritic layers at coating speeds of 0.2-0.3 cm/sec; and (3) a standard for producing total area SOC solar cells using slotted ceramic substrates was developed.

Evolution of a Native Oxide Layer at the a-Si:H/c-Si Interface and Its Influence on a Silicon Heterojunction Solar Cell.

PubMed

Liu, Wenzhu; Meng, Fanying; Zhang, Xiaoyu; Liu, Zhengxin

2015-12-09

The interface microstructure of a silicon heterojunction (SHJ) solar cell was investigated. We found an ultrathin native oxide layer (NOL) with a thickness of several angstroms was formed on the crystalline silicon (c-Si) surface in a very short time (∼30 s) after being etched by HF solution. Although the NOL had a loose structure with defects that are detrimental for surface passivation, it acted as a barrier to restrain the epitaxial growth of hydrogenated amorphous silicon (a-Si:H) during the plasma-enhanced chemical vapor deposition (PECVD). The microstructure change of the NOL during the PECVD deposition of a-Si:H layers with different conditions and under different H2 plasma treatments were systemically investigated in detail. When a brief H2 plasma was applied to treat the a-Si:H layer after the PECVD deposition, interstitial oxygen and small-size SiO2 precipitates were transformed to hydrogenated amorphous silicon suboxide alloy (a-SiO(x):H, x ∼ 1.5). In the meantime, the interface defect density was reduced by about 50%, and the parameters of the SHJ solar cell were improved due to the post H2 plasma treatment.

Gold Nanoparticles on Functionalized Silicon Substrate under Coulomb Blockade Regime: An Experimental and Theoretical Investigation.

PubMed

Pluchery, Olivier; Caillard, Louis; Dollfus, Philippe; Chabal, Yves J

2018-01-18

Single charge electronics offer a way for disruptive technology in nanoelectronics. Coulomb blockade is a realistic way for controlling the electric current through a device with the accuracy of one electron. In such devices the current exhibits a step-like increase upon bias which reflects the discrete nature of the fundamental charge. We have assembled a double tunnel junction on an oxide-free silicon substrate that exhibits Coulomb staircase characteristics using gold nanoparticles (AuNPs) as Coulomb islands. The first tunnel junction is an insulating layer made of a grafted organic monolayer (GOM) developed for this purpose. The GOM also serves for attaching AuNPs covalently. The second tunnel junction is made by the tip of an STM. We show that this device exhibits reproducible Coulomb blockade I-V curves at 40 K in vacuum. We also show that depending on the doping of the silicon substrate, the whole Coulomb staircase can be adjusted. We have developed a simulation approach based on the orthodox theory that was completed by calculating the bias dependent tunnel barriers and by including an accurate calculation of the band bending. This model accounts for the experimental data and the doping dependence of Coulomb oscillations. This study opens new perspectives toward designing new kind of single electron transistors (SET) based on this dependence of the Coulomb staircase with the charge carrier concentration.

Liquid argon scintillation read-out with silicon devices

NASA Astrophysics Data System (ADS)

Canci, N.; Cattadori, C.; D'Incecco, M.; Lehnert, B.; Machado, A. A.; Riboldi, S.; Sablone, D.; Segreto, E.; Vignoli, C.

2013-10-01

Silicon photosensors represent a viable alternative to standard photomultipliers in fields such as communications and medical imaging. We explored the interesting possibility of using these sensors in combination with liquid argon (LAr) for astroparticle physics applications such as neutrino, dark matter and double beta decay experiments. In fact, silicon photosensors have detection efficiencies comparable with those of the highest performance PMTs and can be manufactured with high level of radiopurity. In particular within the on-going R&D activity of the SILENT project (Low background and low noise techniques for double beta decay physics funded by ASPERA) a large area SiPM (Silicon PhotoMultiplier - Hamamatsu S11828-3344M - 1.7 cm2 area) has been installed in a LAr scintillation chamber of 0.5 liters volume together with a cryogenic photomultiplier tube (Hamamatsu R11065) used as a reference. The liquid argon chamber has been exposed to many gamma sources of different energies and single photoelectron response and light yield for the SiPM and PMT have been measured and compared. In this contribution the results of the tests, and the ongoing R&D to optimize the SiPM for cryogenic and for ultralow background applications, are reported, as well as the possible application in the GERDA experiment on Double Beta Decay Searches of 76Ge.

Effect of interfacial oxide layers on the current-voltage characteristics of Al-Si contacts

NASA Technical Reports Server (NTRS)

Porter, W. A.; Parker, D. L.

1976-01-01

Aluminum-silicon contacts with very thin interfacial oxide layers and various surface impurity concentrations are studied for both n and p-type silicon. To determine the surface impurity concentrations on p(+)-p and n(+)-n structures, a modified C-V technique was utilized. Effects of interfacial oxide layers and surface impurity concentrations on current-voltage characteristics are discussed based on the energy band diagrams from the conductance-voltage plots. The interfacial oxide and aluminum layer causes image contrasts on X-ray topographs.

Estimation of the efficiency of the introduction of a porous layer into a silicon-on-sapphire structure substrate to enhance the reliability of devices under irradiation

DOE Office of Scientific and Technical Information (OSTI.GOV)

Aleksandrov, P. A., E-mail: Alexandrov-PA@nrcki.ru; Baranova, E. K.; Budaragin, V. V.

2016-08-15

We investigate the efficiency of the introduction of a porous layer into the substrate of a silicon-onsapphire structure by the implantation of He ions to enhance the radiation resistance of devices. The properties of the introduced layer and its parameters affecting the concentration of minority charge carriers generated by irradiation are analyzed. The reported results of the analysis and calculations can be used to optimize He-ion implantation conditions during the formation of a porous layer.

Longitudinal transvaginal ultrasound evaluation of cesarean scar niche incidence and depth in the first two years after single- or double-layer uterotomy closure: a randomized controlled trial.

PubMed

Bamberg, Christian; Hinkson, Larry; Dudenhausen, Joachim W; Bujak, Verena; Kalache, Karim D; Henrich, Wolfgang

2017-12-01

Cesarean deliveries are the most common abdominal surgery procedure globally, and the optimal way to suture the hysterotomy remains a matter of debate. The aim of this study was to assess the incidence of cesarean scar niches and the depth after single- or double-layer uterine closure. We performed a randomized controlled trial in which women were allocated to three uterotomy suture techniques: continuous single-layer unlocked, continuous locked single-layer, or double-layer sutures. Transvaginal ultrasound was performed six weeks and 6-24 months after cesarean delivery [Clinicaltrials.gov (NCT02338388)]. The study included 435 women. Six weeks after delivery, the incidence of niche was not significantly different between the groups (p = 0.52): 40% for single-layer unlocked, 32% for single-layer locked and 43% for double-layer sutures. The mean ± SD niche depths were 3.0 ± 1.4 mm for single-layer unlocked, 3.6 ± 1.7 mm for single-layer locked and 3.3 ± 1.3 mm for double-layer sutures (p = 1.0). There were no significant differences (p = 0.58) in niche incidence between the three groups at the second ultrasound follow up: 30% for single-layer unlocked, 23% for single-layer locked and 29% for double-layer sutures. The mean ± SD niche depth was 3.1 ± 1.5 mm after single-layer unlocked, 2.8 ± 1.5 mm after single-layer locked and 2.5 ± 1.2 mm after double-layer sutures (p = 0.61). There was a trend (p = 0.06) for the residual myometrium thickness to be thicker after double-layer repair at the long-term follow up. The incidence of cesarean scar niche formation and the niche depth was independent of the hysterotomy closure technique. © 2017 Nordic Federation of Societies of Obstetrics and Gynecology.

Zeroth order Fabry-Perot resonance enabled ultra-thin perfect light absorber using percolation aluminum and silicon nanofilms

DOE PAGES

Mirshafieyan, Seyed Sadreddin; Luk, Ting S.; Guo, Junpeng

2016-03-04

Here, we demonstrated perfect light absorption in optical nanocavities made of ultra-thin percolation aluminum and silicon films deposited on an aluminum surface. The total layer thickness of the aluminum and silicon films is one order of magnitude less than perfect absorption wavelength in the visible spectral range. The ratio of silicon cavity layer thickness to perfect absorption wavelength decreases as wavelength decreases due to the increased phase delays at silicon-aluminum boundaries at shorter wavelengths. It is explained that perfect light absorption is due to critical coupling of incident wave to the fundamental Fabry-Perot resonance mode of the structure where themore » round trip phase delay is zero. Simulations were performed and the results agree well with the measurement results.« less

Graphene as a transparent electrode for amorphous silicon-based solar cells

NASA Astrophysics Data System (ADS)

Vaianella, F.; Rosolen, G.; Maes, B.

2015-06-01

The properties of graphene in terms of transparency and conductivity make it an ideal candidate to replace indium tin oxide (ITO) in a transparent conducting electrode. However, graphene is not always as good as ITO for some applications, due to a non-negligible absorption. For amorphous silicon photovoltaics, we have identified a useful case with a graphene-silica front electrode that improves upon ITO. For both electrode technologies, we simulate the weighted absorption in the active layer of planar amorphous silicon-based solar cells with a silver back-reflector. The graphene device shows a significantly increased absorbance compared to ITO-based cells for a large range of silicon thicknesses (34.4% versus 30.9% for a 300 nm thick silicon layer), and this result persists over a wide range of incidence angles.

THz-wave generation via difference frequency mixing in strained silicon based waveguide utilizing its second order susceptibility χ((2)).

PubMed

Saito, Kyosuke; Tanabe, Tadao; Oyama, Yutaka

2014-07-14

Terahertz (THz) wave generation via difference frequency mixing (DFM) process in strain silicon membrane waveguides by introducing the straining layer is theoretically investigated. The Si(3)N(4) straining layer induces anisotropic compressive strain in the silicon core and results in the appearance of the bulk second order nonlinear susceptibility χ((2)) by breaking the crystal symmetry. We have proposed waveguide structures for THz wave generation under the DFM process by .using the modal birefringence in the waveguide core. Our simulations show that an output power of up to 0.95 mW can be achieved at 9.09 THz. The strained silicon optical device may open a widow in the field of the silicon-based active THz photonic device applications.