Fabrication of an Absorber-Coupled MKID Detector and Readout for Sub-Millimeter and Far-Infrared Astronomy

NASA Technical Reports Server (NTRS)

Brown, Ari-David; Hsieh, Wen-Ting; Moseley, S. Harvey; Stevenson, Thomas R.; U-yen, Kongpop; Wollack, Edward J.

2010-01-01

We have fabricated absorber-coupled microwave kinetic inductance detector (MKID) arrays for sub-millimeter and far-infrared astronomy. Each detector array is comprised of lambda/2 stepped impedance resonators, a 1.5 micrometer thick silicon membrane, and 380 micrometer thick silicon walls. The resonators consist of parallel plate aluminum transmission lines coupled to low impedance Nb microstrip traces of variable length, which set the resonant frequency of each resonator. This allows for multiplexed microwave readout and, consequently, good spatial discrimination between pixels in the array. The Al transmission lines simultaneously act to absorb optical power and are designed to have a surface impedance and filling fraction so as to match the impedance of free space. Our novel fabrication techniques demonstrate high fabrication yield of MKID arrays on large single crystal membranes and sub-micron front-to-back alignment of the microstrip circuit.

Fabrication of an Absorber-Coupled MKID Detector and Readout for Sub-Millimeter and Far-Infrared Astronomy

NASA Technical Reports Server (NTRS)

Brown, Ari-David; Hsieh, Wen-Ting; Moseley, S. Harvey; Stevenson, Thomas R.; U-yen, Kongpop; Wollack, Edward J.

2010-01-01

We have fabricated absorber-coupled microwave kinetic inductance detector (MKID) arrays for sub-millimeter and farinfrared astronomy. Each detector array is comprised of lambda/2 stepped impedance resonators, a 1.5µm thick silicon membrane, and 380µm thick silicon walls. The resonators consist of parallel plate aluminum transmission lines coupled to low impedance Nb microstrip traces of variable length, which set the resonant frequency of each resonator. This allows for multiplexed microwave readout and, consequently, good spatial discrimination between pixels in the array. The Al transmission lines simultaneously act to absorb optical power and are designed to have a surface impedance and filling fraction so as to match the impedance of free space. Our novel fabrication techniques demonstrate high fabrication yield of MKID arrays on large single crystal membranes and sub-micron front-to-back alignment of the microstrip circuit.

Intermixing optical and microwave signals in GaAs microstrip circuits for phase-locking applications

NASA Astrophysics Data System (ADS)

Li, Ming G.; Chauchard, Eve A.; Lee, Chi H.; Hung, Hing-Loi A.

1990-12-01

The microwave modulation of the interference generated by optical beams that are reflected from the top and bottom surfaces of GaAs substrate adjacent to a microstrip line is studied. The detected modulation is used to directly characterize the electrooptic effect. This optical-microwave intermixing technique is applied to phase-lock a free-running microwave oscillator with picosecond laser pulses. One potential application of this technique is for the optical on-wafer characterization of MMICs.

Observation of beta and X rays with 3-D-architecture silicon microstrip sensors

NASA Astrophysics Data System (ADS)

Kenney, C. J.; Parker, S. I.; Krieger, B.; Ludewigt, B.; Dubbs, T. P.; Sadrozinski, H.

2001-04-01

The first silicon radiation sensors based on the three-dimensional (3-D) architecture have been successfully fabricated. X-ray spectra from iron-55 and americium-241 have been recorded by reading out a 3-D architecture detector via wire bonds to a low-noise, charge-sensitive preamplifier. Using a beta source, coincidences between a 3-D sensor and a plastic scintillator were observed. This is the first observation of ionizing radiation using a silicon sensor based on the 3-D architecture. Details of the apparatus and measurements are described.

The study of microstrip antenna arrays and related problems

NASA Technical Reports Server (NTRS)

Lo, Y. T.

1984-01-01

The physical layout of the array elements and the proximity of the microstrip feed network makes the input impedance and radiation pattern values dependent upon the effects of mutual coupling, feedline discontinuities and feed point location. The extent of these dependences was assessed and a number of single patch and module structures were constructed and measured at an operating frequency of approximately 4.0 GHz. The empirical results were compared with the ones which were theoretically predicted by the cavity model of thin microstrip antennas. Each element was modelled as an independent radiating patch and each microstrip feedline as an independent, quasi-TEM transmission line. The effects of the feedline discontinuities are approximated by lumped L-C circuit models.

Hands-on work fine-tunes X-band PIN-diode duplexer

NASA Astrophysics Data System (ADS)

Schneider, P.

1985-06-01

Computer-aided design (CAD) programs for fabricating PIN-diode duplexers are useful in avoiding time-consuming cut-and-try techniques. Nevertheless, to attain minimum insertion loss, only experimentation yields the optimum microstrip circuitry. A PIN-diode duplexer, consisting of two SPST PIN-diode switches and a pair of 3-dB Lange microstrip couplers, designed for an X-band transmit/receive module exemplifies what is possible when computer-derived designs and experimentation are used together. Differences between the measured and computer-generated figures for insertion loss can be attributed to several factors not included in the CAD program - for example, radiation and connector losses. Mechanical tolerances of the microstrip PC board and variations in the SMA connector-to-microstrip transition contribute to the discrepancy.

Belle II silicon vertex detector

NASA Astrophysics Data System (ADS)

Adamczyk, K.; Aihara, H.; Angelini, C.; Aziz, T.; Babu, V.; Bacher, S.; Bahinipati, S.; Barberio, E.; Baroncelli, Ti.; Baroncelli, To.; Basith, A. K.; Batignani, G.; Bauer, A.; Behera, P. K.; Bergauer, T.; Bettarini, S.; Bhuyan, B.; Bilka, T.; Bosi, F.; Bosisio, L.; Bozek, A.; Buchsteiner, F.; Casarosa, G.; Ceccanti, M.; Červenkov, D.; Chendvankar, S. R.; Dash, N.; Divekar, S. T.; Doležal, Z.; Dutta, D.; Enami, K.; Forti, F.; Friedl, M.; Hara, K.; Higuchi, T.; Horiguchi, T.; Irmler, C.; Ishikawa, A.; Jeon, H. B.; Joo, C. W.; Kandra, J.; Kang, K. H.; Kato, E.; Kawasaki, T.; Kodyš, P.; Kohriki, T.; Koike, S.; Kolwalkar, M. M.; Kvasnička, P.; Lanceri, L.; Lettenbicher, J.; Maki, M.; Mammini, P.; Mayekar, S. N.; Mohanty, G. B.; Mohanty, S.; Morii, T.; Nakamura, K. R.; Natkaniec, Z.; Negishi, K.; Nisar, N. K.; Onuki, Y.; Ostrowicz, W.; Paladino, A.; Paoloni, E.; Park, H.; Pilo, F.; Profeti, A.; Rashevskaya, I.; Rao, K. K.; Rizzo, G.; Rozanska, M.; Sandilya, S.; Sasaki, J.; Sato, N.; Schultschik, S.; Schwanda, C.; Seino, Y.; Shimizu, N.; Stypula, J.; Suzuki, J.; Tanaka, S.; Tanida, K.; Taylor, G. N.; Thalmeier, R.; Thomas, R.; Tsuboyama, T.; Uozumi, S.; Urquijo, P.; Vitale, L.; Volpi, M.; Watanuki, S.; Watson, I. J.; Webb, J.; Wiechczynski, J.; Williams, S.; Würkner, B.; Yamamoto, H.; Yin, H.; Yoshinobu, T.; Belle II SVD Collaboration

2016-09-01

The Belle II experiment at the SuperKEKB collider in Japan is designed to indirectly probe new physics using approximately 50 times the data recorded by its predecessor. An accurate determination of the decay-point position of subatomic particles such as beauty and charm hadrons as well as a precise measurement of low-momentum charged particles will play a key role in this pursuit. These will be accomplished by an inner tracking device comprising two layers of pixelated silicon detector and four layers of silicon vertex detector based on double-sided microstrip sensors. We describe herein the design, prototyping and construction efforts of the Belle-II silicon vertex detector.

Overview of the Design, Fabrication and Performance Requirements of Micro-Spec, an Integrated Submillimeter Spectrometer

NASA Technical Reports Server (NTRS)

Barrentine, Emily M.; Noroozian, Omid; Brown, Ari D.; Cataldo, Giuseppe; Ehsan, Negar; Hsieh, Wen-Ting; Stevenson, Thomas R.; U-Yen, Kongpop; Wollack, Edward J.; Moseley, S. Harvey

2015-01-01

Micro-Spec is a compact submillimeter (350-700 GHz) spectrometer which uses low loss superconducting niobium microstrip transmission lines and a single-crystal silicon dielectric to integrate all of the components of a grating-analog spectrometer onto a single chip. Here we present details of the fabrication and design of a prototype Micro-Spec spectrometer with resolution, R64, where we use a high-yield single-flip wafer bonding process to realize instrument components on a 0.45 m single-crystal silicon dielectric. We discuss some of the electromagnetic design concerns (such as loss, stray-light, cross-talk, and fabrication tolerances) for each of the spectrometer components and their integration into the instrument as a whole. These components include a slot antenna with a silicon lens for optical coupling, a phase delay transmission line network, parallel plate waveguide interference region, and aluminum microstrip transmission line kinetic inductance detectors with extremely low cross-talk and immunity to stray light. We have demonstrated this prototype spectrometer with design resolution of R64. Given the optical performance of this prototype, we will also discuss the extension of this design to higher resolutions suitable for balloon-flight.

Optimization of Micro-Spec, an Ultra-Compact High-Performance Spectrometer for Far-Infrared Astronomy

NASA Astrophysics Data System (ADS)

Cataldo, Giuseppe; Moseley, S. H.; Wollack, E.; Hsieh, W.; Huang, W.; Stevenson, T.

2013-06-01

Micro-Spec (µ-Spec) is a high-sensitivity direct-detection spectrometer operating in the far-infrared and submillimeter regime. When combined with a cryogenic telescope, it provides an enabling technology for studying the epoch of reionization and initial galaxy formation. As a direct-detection spectrometer, µ-Spec can provide high sensitivity under the low background conditions provided by cryogenic telescopes such as the space infrared telescope for cosmology and astrophysics SPICA. The µ-Spec modules use low-loss superconducting microstrip transmission lines implemented on a single 4-inch-diameter wafer. Such a dramatic size reduction is enabled by the use of silicon, a material with an index of refraction about three times that of vacuum, which thus allows the microstrip lines to be one third their vacuum length. Using a large number of modules as well as reducing the negative effects of stray light also contributes positively to the enhanced sensitivity of such an instrument. µ-Spec can be compared to a grating spectrometer, in which the phase retardation generated by the reflection from the grating grooves is instead produced by propagation through transmission lines of different length. The µ-Spec optical design is based on the stigmatization and minimization of the light path function in a two-dimensional diffractive region. The power collected through a broadband antenna is progressively divided by binary microstrip power dividers. The position of the radiators is selected to provide zero phase errors at two stigmatic points, and a third stigmatic point is generated by introducing a differential phase shift in each radiator. To optimize the overall efficiency of the instrument, the emitters are directed to the center of the focal surface. A point design was developed for initial demonstration. Because of losses to other diffraction orders, the efficiency of the design presented is about 30%. Design variations on this implementation are illustrated which can lead to near-unit efficiency and will be the basis of future instruments. Measurements are being conducted to validate the designs.

Evanescent Microwave Probes on High-Resistivity Silicon and its Application in Characterization of Semiconductors

NASA Technical Reports Server (NTRS)

Tabib-Azar, M.; Akinwande, D.; Ponchak, George E.; LeClair, S. R.

1999-01-01

In this article we report the design, fabrication, and characterization of very high quality factor 10 GHz microstrip resonators on high-resistivity (high-rho) silicon substrates. Our experiments show that an external quality factor of over 13 000 can be achieved on microstripline resonators on high-rho silicon substrates. Such a high Q factor enables integration of arrays of previously reported evanescent microwave probe (EMP) on silicon cantilever beams. We also demonstrate that electron-hole pair recombination and generation lifetimes of silicon can be conveniently measured by illuminating the resonator using a pulsed light. Alternatively, the EMP was also used to nondestructively monitor excess carrier generation and recombination process in a semiconductor placed near the two-dimensional resonator.

RF Transmission Lines on Silicon Substrates

NASA Technical Reports Server (NTRS)

Ponchak, George E.

1999-01-01

A review of RF transmission lines on silicon substrates is presented. Through measurements and calculated results, it is shown that attenuation is dominated by conductor loss if silicon substrates with a resistivity greater than 2500 Ohm-cm are used. Si passivation layers affect the transmission line attenuation; however, measured results demonstrate that passivation layers do not necessarily increase attenuation. If standard, low resistivity Si wafers must be used, alternative transmission lines such as thin film microstrip and Co-Planar Waveguide (CPW) on thick polyimide layers must be used. Measured results presented here show that low loss per unit length is achievable with these transmission lines.

Improvement of both bandwidth and driving voltage of polymer phase modulators using buried in-plane coupled micro-strip driving electrodes

NASA Astrophysics Data System (ADS)

Hadjloum, Massinissa; El Gibari, Mohammed; Li, Hongwu; Daryoush, Afshin S.

2017-06-01

A large performance improvement of polymer phase modulators is reported by using buried in-plane coupled microstrip (CMS) driving electrodes, instead of standard vertical Micro-Strip electrodes. The in-plane CMS driving electrodes have both low radio frequency (RF) losses and high overlap integral between optical and RF waves compared to the vertical designs. Since the optical waveguide and CMS electrodes are located in the same plane, optical injection and microwave driving access cannot be separated perpendicularly without intersection between them. A via-less transition between grounded coplanar waveguide access and CMS driving electrodes is introduced in order to provide broadband excitation of optical phase modulators and avoid the intersection of the optical core and the electrical probe. Simulation and measurement results of the benzocyclobutene polymer as a cladding material and the PMMI-CPO1 polymer as an optical core with an electro-optic coefficient of 70 pm/V demonstrate a broadband operation of 67 GHz using travelling-wave driving electrodes with a half-wave voltage of 4.5 V, while satisfying its low RF losses and high overlap integral between optical and RF waves of in-plane CMS electrodes.

Performance evaluation of the analogue front-end and ADC prototypes for the Gotthard-II development

NASA Astrophysics Data System (ADS)

Zhang, J.; Andrä, M.; Barten, R.; Bergamaschi, A.; Brückner, M.; Dinapoli, R.; Fröjdh, E.; Greiffenberg, D.; Lopez-Cuenca, C.; Mezza, D.; Mozzanica, A.; Ramilli, M.; Redford, S.; Ruat, M.; Ruder, C.; Schmitt, B.; Shi, X.; Thattil, D.; Tinti, G.; Turcato, M.; Vetter, S.

2017-12-01

Gotthard-II is a silicon microstrip detector developed for the European X-ray Free-Electron Laser (XFEL.EU). Its potential scientific applications include X-ray absorption/emission spectroscopy, hard X-ray high resolution single-shot spectrometry (HiREX), energy dispersive experiments at 4.5 MHz frame rate, beam diagnostics, as well as veto signal generation for pixel detectors. Gotthard-II uses a silicon microstrip sensor with a pitch of 50 μm or 25 μm and with 1280 or 2560 channels wire-bonded to readout chips (ROCs). In the ROC, an adaptive gain switching pre-amplifier (PRE), a fully differential Correlated-Double-Sampling (CDS) stage, an Analog-to-Digital Converter (ADC) as well as a Static Random-Access Memory (SRAM) capable of storing all the 2700 images in an XFEL.EU bunch train will be implemented. Several prototypes with different designs of the analogue front-end (PRE and CDS) and ADC test structures have been fabricated in UMC-110 nm CMOS technology and their performance has been evaluated. In this paper, the performance of the analogue front-end and ADC will be summarized.

Overview of the Micro Vertex Detector for the P bar ANDA experiment

NASA Astrophysics Data System (ADS)

Calvo, Daniela; P¯ANDA MVD Group

2017-02-01

The P bar ANDA experiment is devoted to study interactions between cooled antiproton beams and a fixed target (the interaction rate is of about 107 events/s), hydrogen or heavier nuclei. The innermost tracker of P bar ANDA is the Micro Vertex Detector (MVD), specially designed to ensure the secondary vertex resolution for the discrimination of short-lived charmonium states. Hybrid epitaxial silicon pixels and double-sided silicon microstrips will equip four barrels, arranged around the interaction point, and six forward disks. The experiment features a triggerless architecture with a master clock of 160 MHz, therefore the MVD has to run with a continuous data transmission where the hits need precise timestamps. The energy loss of the particles in the sensor will be measured as well. The challenging request of a triggerless readout suggested to develop custom readout chips for both pixel (ToPix) and microstrip (PASTA) devices. To validate components and the triggerless readout architecture, prototypes have been built and tested. After an overview of the MVD, the technological aspects and performances of some prototypes will be reported.

Development of n+-in-p large-area silicon microstrip sensors for very high radiation environments - ATLAS12 design and initial results

NASA Astrophysics Data System (ADS)

Unno, Y.; Edwards, S. O.; Pyatt, S.; Thomas, J. P.; Wilson, J. A.; Kierstead, J.; Lynn, D.; Carter, J. R.; Hommels, L. B. A.; Robinson, D.; Bloch, I.; Gregor, I. M.; Tackmann, K.; Betancourt, C.; Jakobs, K.; Kuehn, S.; Mori, R.; Parzefall, U.; Wiik-Fucks, L.; Clark, A.; Ferrere, D.; Gonzalez Sevilla, S.; Ashby, J.; Blue, A.; Bates, R.; Buttar, C.; Doherty, F.; Eklund, L.; McMullen, T.; McEwan, F.; O`Shea, V.; Kamada, S.; Yamamura, K.; Ikegami, Y.; Nakamura, K.; Takubo, Y.; Nishimura, R.; Takashima, R.; Chilingarov, A.; Fox, H.; Affolder, A. A.; Allport, P. P.; Casse, G.; Dervan, P.; Forshaw, D.; Greenall, A.; Wonsak, S.; Wormald, M.; Cindro, V.; Kramberger, G.; Mandic, I.; Mikuz, M.; Gorelov, I.; Hoeferkamp, M.; Palni, P.; Seidel, S.; Taylor, A.; Toms, K.; Wang, R.; Hessey, N. P.; Valencic, N.; Arai, Y.; Hanagaki, K.; Dolezal, Z.; Kodys, P.; Bohm, J.; Mikestikova, M.; Bevan, A.; Beck, G.; Ely, S.; Fadeyev, V.; Galloway, Z.; Grillo, A. A.; Martinez-McKinney, F.; Ngo, J.; Parker, C.; Sadrozinski, H. F.-W.; Schumacher, D.; Seiden, A.; French, R.; Hodgson, P.; Marin-Reyes, H.; Parker, K.; Paganis, S.; Jinnouchi, O.; Motohashi, K.; Todome, K.; Yamaguchi, D.; Hara, K.; Hagihara, M.; Garcia, C.; Jimenez, J.; Lacasta, C.; Marti i Garcia, S.; Soldevila, U.

2014-11-01

We have been developing a novel radiation-tolerant n+-in-p silicon microstrip sensor for very high radiation environments, aiming for application in the high luminosity large hadron collider. The sensors are fabricated in 6 in., p-type, float-zone wafers, where large-area strip sensor designs are laid out together with a number of miniature sensors. Radiation tolerance has been studied with ATLAS07 sensors and with independent structures. The ATLAS07 design was developed into new ATLAS12 designs. The ATLAS12A large-area sensor is made towards an axial strip sensor and the ATLAS12M towards a stereo strip sensor. New features to the ATLAS12 sensors are two dicing lines: standard edge space of 910 μm and slim edge space of 450 μm, a gated punch-through protection structure, and connection of orphan strips in a triangular corner of stereo strips. We report the design of the ATLAS12 layouts and initial measurements of the leakage current after dicing and the resistivity of the wafers.

Signal coupling to embedded pitch adapters in silicon sensors

NASA Astrophysics Data System (ADS)

Artuso, M.; Betancourt, C.; Bezshyiko, I.; Blusk, S.; Bruendler, R.; Bugiel, S.; Dasgupta, R.; Dendek, A.; Dey, B.; Ely, S.; Lionetto, F.; Petruzzo, M.; Polyakov, I.; Rudolph, M.; Schindler, H.; Steinkamp, O.; Stone, S.

2018-01-01

We have examined the effects of embedded pitch adapters on signal formation in n-substrate silicon microstrip sensors with data from beam tests and simulation. According to simulation, the presence of the pitch adapter metal layer changes the electric field inside the sensor, resulting in slowed signal formation on the nearby strips and a pick-up effect on the pitch adapter. This can result in an inefficiency to detect particles passing through the pitch adapter region. All these effects have been observed in the beam test data.

Design And Performance Of Micro-Spec, An Ultra Compact High-sensitivity Far-infrared Spectrometer For SPICA

NASA Astrophysics Data System (ADS)

Cataldo, Giuseppe; Moseley, S. H.; Hsieh, W.; Huang, W.; Stevenson, T. R.; Wollack, E. J.

2012-05-01

Micro-Spec (µ-Spec) is a high-performance spectrometer working in the 250-700-µm wavelength range, whose modules use low-loss superconducting microstrip transmission lines on a single 4-inch-diameter silicon wafer. Creating the required phase delays in transmission lines rather than free space allows such an instrument to have, in principle, the performance of a meter-scale grating spectrometer. Such a dramatic size reduction enables classes of instruments for space that would be impossible with conventional technologies. This technology can dramatically enhance the long-wavelength capability of the space infrared telescope for cosmology and astrophysics SPICA. µ-Spec is analogous to a grating spectrometer. The phase retardation generated by the reflection from the grating grooves is instead produced by propagation through a transmission line. The power received by a broadband antenna is progressively divided by binary microstrip power dividers, and the required phase delays are generated by different lengths of microstrip transmission lines. By arranging these outputs along a circular focal surface, the analog of a Rowland spectrometer can be created. The procedure to optimize the Micro-Spec design is based on the stigmatization and minimization of the light path function in a two-dimensional bounded region, which results in an optimized geometry arrangement with three stigmatic points. In addition, in order to optimize the overall efficiency of the instrument, the emitters are directed to the center of the focal surface. The electric field amplitude and phase as well as the power transmitted and absorbed throughout the region are analyzed. Measurements are planned in late summer to validate the designs. This material is based upon work supported by NASA through the ROSES/APRA program. This research was supported by an appointment (Cataldo) at the Goddard Space Flight Center administered by Universities Space Research Association through a contract with NASA.

Characterization of silicon micro-strip sensors with a pulsed infra-red laser system for the CBM experiment at FAIR

NASA Astrophysics Data System (ADS)

Ghosh, P.

2015-03-01

The Compressed Baryonic Matter (CBM) experiment at FAIR is composed of 8 tracking stations consisting of 1292 double sided silicon micro-strip sensors. For the quality assurance of produced prototype sensors a laser test system (LTS) has been developed. The aim of the LTS is to scan sensors with a pulsed infra-red laser driven by step motor to determine the charge sharing in-between strips and to measure qualitative uniformity of the sensor response over the whole active area. The prototype sensors which are tested with the LTS so far have 256 strips with a pitch of 50 μm on each side. They are read-out using a self-triggering prototype read-out electronic ASIC called n-XYTER. The LTS is designed to measure sensor response in an automatized procedure at several thousand positions across the sensor with focused infra-red laser light (spot size ≈ 12 μm , wavelength = 1060 nm). The pulse with duration (≈ 10 ns) and power (≈ 5 mW) of the laser pulses is selected such, that the absorption of the laser light in the 300 μm thick silicon sensors produces a number of about 24000 electrons, which is similar to the charge created by minimum ionizing particles (MIP) in these sensors. Laser scans different prototype sensors is reported.

Proceedings of the Antenna Applications Symposium (1988) Volume 1

DTIC Science & Technology

1989-06-01

FIELD GROUP SUB-GROUP Antennas)p Microstrip, ,.Multibeam Antennas 6 Satellite Antennas. Reflector Array Antennas, ____________I____ Broadband Antennas...C. Sullivan and G. E. Evans 8. " Broadband MMIC T/R Module/Subarray Performance," D. Brubaker, 157 D. Scott, S. Ludvik, M. Lynch, H. II. Chung, W...34 S. Sanzgiri, 277 B. Powers, Jr., and J. Hart ib. " broadbanding Techniques for Microstrip Patch Antennas - A ’.93 kReview," K. C. Gupta * NUT INCLUDED

Mode stabilization in quantum cascade lasers via an intra-cavity cascaded nonlinearity.

PubMed

St-Jean, M Renaudat; Amanti, M I; Bismuto, A; Beck, M; Faist, J; Sirtori, C

2017-02-06

We present self-stabilization of the inter-mode separation of a quantum cascade laser (QCL) emitting at 9 μm via cascaded second order nonlinearity. This effect has been observed in lasers that have the optical cavity embedded into a microwave strip-line. The intermodal beat note spectra narrow with increasing laser output power, up to less than 100 kHz. A flat frequency response to direct modulation up to 14 GHz is reported for these microstrip QCLs. The laser inter-mode spacing can be locked to an external RF signal and tuned by more than 1 MHz from the free-running spacing. A parallel study on the same laser material in a non-microstrip line waveguide shows superior performances of the microstrip QCL in terms of the intermodal spectral locking and stability. Finally by analyzing our results with the theory of the injection locking of coupled oscillators, we deduce that the microwave power injected in the microstrip QCL is 2 orders of magnitude higher than in the reference laser.

Vacuum Gap Microstrip Microwave Resonators for 2.5-D Integration in Quantum Computing

DOE Office of Scientific and Technical Information (OSTI.GOV)

Lewis, Rupert M.; Henry, Michael David; Schroeder, Katlin

We demonstrate vacuum gap λ/2 microwave resonators as a route toward higher integration in superconducting qubit circuits. The resonators are fabricated from pieces on two silicon chips bonded together with an In-Sb bond. Measurements of the devices yield resonant frequencies in good agreement with simulations. Furthermore, we discuss creating low loss circuits in this geometry.

Vacuum Gap Microstrip Microwave Resonators for 2.5-D Integration in Quantum Computing

DOE PAGES

Lewis, Rupert M.; Henry, Michael David; Schroeder, Katlin

2017-02-22

We demonstrate vacuum gap λ/2 microwave resonators as a route toward higher integration in superconducting qubit circuits. The resonators are fabricated from pieces on two silicon chips bonded together with an In-Sb bond. Measurements of the devices yield resonant frequencies in good agreement with simulations. Furthermore, we discuss creating low loss circuits in this geometry.

Solid State Technology Branch of NASA Lewis Research Center Second Annual Digest, June 1989 - June 1990

NASA Technical Reports Server (NTRS)

1990-01-01

A collection of papers and presentations authored by the branch between June 1989 and June 1990 is presented. The papers are organized into four sections. Section 1 deals with research in microwave circuits and includes full integrated circuits, the demonstration of optical/RF interfaces, and the evaluation of some hybrid circuitry. Section 2 indicates developments in coplanar waveguides and their use in breadboard circuits. Section 3 addresses high temperature superconductivity and includes: thin film deposition, transport measurement of film characteristics, RF surface resistant measurements, substrate permittivity measurements, measurements of microstrip line characteristics at cryogenic temperatures, patterning of superconducting films, and evaluation of simple passive microstrip circuitry based on YBaCuO films. Section 4 deals with carbon films, silicon carbide, GaAs/AlGaAs, HgCdTe, and other materials.

Microwave characterization of slotline on high resistivity silicon for antenna feed network

NASA Technical Reports Server (NTRS)

Simons, Rainee N.; Taub, Susan R.; Lee, Richard Q.; Young, Paul G.

1993-01-01

Conventional silicon wafers have low resistivity and consequently unacceptably high value of dielectric attenuation constant. Microwave circuits for phased array antenna systems fabricated on these wafers therefore have low efficiency. By choosing a silicon substrate with sufficiently high resistivity it is possible to make the dielectric attenuation constant of the interconnecting microwave transmission lines approach those of GaAs or InP. In order for this to be possible, the transmission lines must be characterized. In this presentation, the effective dielectric constant (epsilon sub eff) and attenuation constant (alpha) of a slotline on high resistivity (5000 to 10 000 ohm-cm) silicon wafer will be discussed. The epsilon sub eff and alpha are determined from the measured resonant frequencies and the corresponding insertion loss of a slotline ring resonator. The results for slotline will be compared with microstrip line and coplanar waveguide.

Ferroelectric/Semiconductor Tunable Microstrip Patch Antenna Developed

NASA Technical Reports Server (NTRS)

Romanofsky, Robert R.

2001-01-01

A lithographically printed microwave antenna that can be switched and tuned has been developed. The structure consists of a rectangular metallic "patch" radiator patterned on a thin ferroelectric film that was grown on high-resistivity silicon. Such an antenna may one day enable a single-phased array aperture to transmit and receive signals at different frequencies, or it may provide a simple way to reconfigure fractal arrays for communications and radar applications.

Photon counting microstrip X-ray detectors with GaAs sensors

NASA Astrophysics Data System (ADS)

Ruat, M.; Andrä, M.; Bergamaschi, A.; Barten, R.; Brückner, M.; Dinapoli, R.; Fröjdh, E.; Greiffenberg, D.; Lopez-Cuenca, C.; Lozinskaya, A. D.; Mezza, D.; Mozzanica, A.; Novikov, V. A.; Ramilli, M.; Redford, S.; Ruder, C.; Schmitt, B.; Shi, X.; Thattil, D.; Tinti, G.; Tolbanov, O. P.; Tyazhev, A.; Vetter, S.; Zarubin, A. N.; Zhang, J.

2018-01-01

High-Z sensors are increasingly used to overcome the poor efficiency of Si sensors above 15 keV, and further extend the energy range of synchrotron and FEL experiments. Detector-grade GaAs sensors of 500 μm thickness offer 98% absorption efficiency at 30 keV and 50% at 50 keV . In this work we assess the usability of GaAs sensors in combination with the MYTHEN photon-counting microstrip readout chip developed at PSI. Different strip length and pitch are compared, and the detector performance is evaluated in regard of the sensor material properties. Despite increased leakage current and noise, photon-counting strips mounted with GaAs sensors can be used with photons of energy as low as 5 keV, and exhibit excellent linearity with energy. The charge sharing is doubled as compared to silicon strips, due to the high diffusion coefficient of electrons in GaAs.

High-Performance Solid-State W-Band Power Amplifiers

NASA Technical Reports Server (NTRS)

Gaier, Todd; Samoska, Lorene; Wells, Mary; Ferber, Robert; Pearson, John; Campbell, April; Peralta, Alejandro; Swift, Gerald; Yocum, Paul; Chung, Yun

2003-01-01

The figure shows one of four solid-state power amplifiers, each capable of generating an output power greater than or equal to 240 mW over one of four overlapping frequency bands from 71 to 106 GHz. (The bands are 71 to 84, 80 to 92, 88 to 99, and 89 to 106 GHz.) The amplifiers are designed for optimum performance at a temperature of 130 K. These amplifiers were developed specifically for incorporation into frequency-multiplier chains in local oscillators in a low-noise, far-infrared receiving instrument to be launched into outer space to make astrophysical observations. The designs of these amplifiers may also be of interest to designers and manufacturers of terrestrial W-band communication and radar systems. Each amplifier includes a set of six high-electron-mobility transistor (HEMT) GaAs monolithic microwave integrated-circuit (MMIC) chips, microstrip cavities, and other components packaged in a housing made from A-40 silicon-aluminum alloy. This alloy was chosen because, for the original intended spacecraft application, it offers an acceptable compromise among the partially competing requirements for high thermal conductivity, low mass, and low thermal expansion. Problems that were solved in designing the amplifiers included designing connectors and packages to fit the available space; designing microstrip signal-power splitters and combiners; matching of impedances across the frequency bands; matching of the electrical characteristics of those chips installed in parallel power-combining arms; control and levelling of output power across the bands; and designing the MMICs, microstrips, and microstrip cavities to suppress tendencies toward oscillation in several modes, both inside and outside the desired frequency bands.

The influence of magnetic and dielectric loss on the noise absorption of iron particles-rubber composites attached to a microstrip line

NASA Astrophysics Data System (ADS)

Kim, Sun-Tae; Park, Yong-Gwon; Kim, Sung-Soo

2008-04-01

Magnetic and dielectric loss are systematically controlled by using iron flake powders with various initial sizes (7 μm and 70 μm) as the absorbent fillers in the rubber matrix, and their noise absorbing characteristics have been investigated as a function of frequency and sheet thickness. Flake iron particles were prepared by the mechanical forging of spherical powders using an attrition mill. Composite sheets (thickness=0.2 mm-1.0 mm) were prepared with a mixture of iron particles and silicone rubber. Attaching the composite sheets to a microstrip line of 50 Ω, a network analyzer was used to measure the reflection and transmission parameters (S11 and S21, respectively). A nearly constant value of S11 (about -10 dB) was observed, irrespective of particle size. However, S21 is strongly dependent upon initial particle size. For the composites of 7 μm particles (with high magnetic loss), S21 is reduced below -20 dB in the frequency range of 1 GHz to 10 GHz, and the corresponding bandwidth of noise absorption is not so greatly diminished by reducing the sheet thickness as low as 0.2 mm. For the composites of 70 μm particles (with high dielectric loss), however, the bandwidth is greatly reduced with a decrease in sheet thickness. It is concluded that the attenuation of conduction noise through the microstrip line is primarily controlled by the magnetic loss of the iron particles due to strong magnetic field around the microstrip line.

Internal alignment and position resolution of the silicon tracker of DAMPE determined with orbit data

NASA Astrophysics Data System (ADS)

Tykhonov, A.; Ambrosi, G.; Asfandiyarov, R.; Azzarello, P.; Bernardini, P.; Bertucci, B.; Bolognini, A.; Cadoux, F.; D'Amone, A.; De Benedittis, A.; De Mitri, I.; Di Santo, M.; Dong, Y. F.; Duranti, M.; D'Urso, D.; Fan, R. R.; Fusco, P.; Gallo, V.; Gao, M.; Gargano, F.; Garrappa, S.; Gong, K.; Ionica, M.; La Marra, D.; Lei, S. J.; Li, X.; Loparco, F.; Marsella, G.; Mazziotta, M. N.; Peng, W. X.; Qiao, R.; Salinas, M. M.; Surdo, A.; Vagelli, V.; Vitillo, S.; Wang, H. Y.; Wang, J. Z.; Wang, Z. M.; Wu, D.; Wu, X.; Zhang, F.; Zhang, J. Y.; Zhao, H.; Zimmer, S.

2018-06-01

The DArk Matter Particle Explorer (DAMPE) is a space-borne particle detector designed to probe electrons and gamma-rays in the few GeV to 10 TeV energy range, as well as cosmic-ray proton and nuclei components between 10 GeV and 100 TeV. The silicon-tungsten tracker-converter is a crucial component of DAMPE. It allows the direction of incoming photons converting into electron-positron pairs to be estimated, and the trajectory and charge (Z) of cosmic-ray particles to be identified. It consists of 768 silicon micro-strip sensors assembled in 6 double layers with a total active area of 6.6 m2. Silicon planes are interleaved with three layers of tungsten plates, resulting in about one radiation length of material in the tracker. Internal alignment parameters of the tracker have been determined on orbit, with non-showering protons and helium nuclei. We describe the alignment procedure and present the position resolution and alignment stability measurements.

A precision device needs precise simulation: Software description of the CBM Silicon Tracking System

NASA Astrophysics Data System (ADS)

Malygina, Hanna; Friese, Volker; CBM Collaboration

2017-10-01

Precise modelling of detectors in simulations is the key to the understanding of their performance, which, in turn, is a prerequisite for the proper design choice and, later, for the achievement of valid physics results. In this report, we describe the implementation of the Silicon Tracking System (STS), the main tracking device of the CBM experiment, in the CBM software environment. The STS makes uses of double-sided silicon micro-strip sensors with double metal layers. We present a description of transport and detector response simulation, including all relevant physical effects like charge creation and drift, charge collection, cross-talk and digitization. Of particular importance and novelty is the description of the time behaviour of the detector, since its readout will not be externally triggered but continuous. We also cover some aspects of local reconstruction, which in the CBM case has to be performed in real-time and thus requires high-speed algorithms.

Cryogenic 160-GHz MMIC Heterodyne Receiver Module

NASA Technical Reports Server (NTRS)

Samoska, Lorene A.; Soria, Mary M.; Owen, Heather R.; Dawson, Douglas E.; Kangaslahti, Pekka P.; Gaier, Todd C.; Voll, Patricia; Lau, Judy; Sieth, Matt; Church, Sarah

2011-01-01

A cryogenic 160-GHz MMIC heterodyne receiver module has demonstrated a system noise temperature of 100 K or less at 166 GHz. This module builds upon work previously described in Development of a 150-GHz MMIC Module Prototype for Large-Scale CMB Radiation (NPO-47664), NASA Tech Briefs, Vol. 35, No. 8 (August 2011), p. 27. In the original module, the local oscillator signal was saturating the MMIC low-noise amplifiers (LNAs) with power. In order to suppress the local oscillator signal from reaching the MMIC LNAs, the W-band (75 110 GHz) signal had to be filtered out before reaching 140 170 GHz. A bandpass filter was developed to cover 120 170 GHz, using microstrip parallel-coupled lines to achieve the desired filter bandwidth, and ensure that the unwanted W-band local oscillator signal would be sufficiently suppressed. With the new bandpass filter, the entire receiver can work over the 140 180-GHz band, with a minimum system noise temperature of 460 K at 166 GHz. The module was tested cryogenically at 20 K ambient temperature, and it was found that the receiver had a noise temperature of 100 K over an 8-GHz bandwidth. The receiver module now includes a microstrip bandpass filter, which was designed to have a 3-dB bandwidth of approximately 120-170 GHz. The filter was fabricated on a 3-mil-thick alumina substrate. The filter design was based on a W-band filter design made at JPL and used in the QUIET (Q/U Imaging ExperimenT) radiometer modules. The W-band filter was scaled for a new center frequency of 150 GHz, and the microstrip segments were changed accordingly. Also, to decrease the bandwidth of the resulting scaled design, the center gaps between the microstrip lines were increased (by four micrometers in length) compared to the gaps near the edges. The use of the 150-GHz bandpass filter has enabled the receiver module to function well at room temperature. The system noise temperature was measured to be less than 600 K (at room temperature) from 154 to 168 GHz. Additionally, the use of a W-band isolator between the receiver module and the local oscillator source also improved the noise temperature substantially. This may be because the mixer was presented with a better impedance match with the use of the isolator. Cryogenic testing indicates a system noise temperature of 100 K or less at 166 GHz. Prior tests of the MMIC amplifiers alone have resulted in a system noise temperature of 65.70 K in the same frequency range (.160 GHz) when cooled to an ambient temperature of 20 K. While other detector systems may be slightly more sensitive (such as SIS mixers), they require more cooling (to 4 K ambient) and are not as easily scalable to build a large array, due to the need for large magnets and other equipment. When cooled to 20 K, this receiver module achieves approximately 100 K system noise temperature, which is slightly higher than single-amplifier module results obtained at JPL (65.70 K when an amplifier is corrected for back-end noise contributions). If this performance can be realized in practice, and a scalable array can be produced, the impact on cosmic microwave background experiments, astronomical and Earth spectroscopy, interferometry, and radio astronomy in general will be dramatic.

In-flight performances of the PAMELA satellite experiment

NASA Astrophysics Data System (ADS)

Papini, P.; Adriani, O.; Ambriola, M.; Barbarino, G. C.; Basili, A.; Bazilevskaja, G. A.; Boezio, M.; Bogomolov, E. A.; Bonechi, L.; Bongi, M.; Bongiorno, L.; Bonvicini, V.; Bruno, A.; Cafagna, F.; Campana, D.; Carlson, P.; Casolino, M.; Castellini, G.; Conrad, J.; De Marzo, C.; De Pascale, M. P.; De Rosa, G.; Di Felice, V.; Fedele, D.; Galper, A. M.; Hofverberg, P.; Koldashov, S. V.; Krutkov, S. Yu.; Kvashnin, A. N.; Lund, J.; Lundquist, J.; Maksumov, O.; Malvezzi, V.; Marcelli, L.; Menn, W.; Mikhailov, V. V.; Minori, M.; Misin, S.; Mocchiutti, E.; Morselli, A.; Nikonov, N. N.; Orsi, S.; Osteria, G.; Pearce, M.; Picozza, P.; Ricci, M.; Ricciarini, S. B.; Runtso, M. F.; Russo, S.; Simon, M.; Sparvoli, R.; Spillantini, P.; Stozhkov, Yu. I.; Taddei, E.; Vacchi, A.; Vannuccini, E.; Voronov, S. A.; Yurkin, Y. T.; Zampa, G.; Zampa, N.; Zverev, V. G.

2008-04-01

PAMELA is a satellite-borne experiment designed to study with great accuracy charged particles in the cosmic radiation with a particular focus on antiparticles. The experiment, housed on board the Russian Resurs-DK1 satellite, was launched on June 15, 2006 in a 350 × 600 km orbit with an inclination of 70∘. The apparatus comprises a time-of-flight system, a silicon-microstrip magnetic spectrometer, a silicon-tungsten electromagnetic calorimeter, an anticoincidence system, a shower tail catcher scintillator and a neutron detector. The combination of these devices allows charged particle identification over a wide energy range. In this work, the detector design is reviewed and the in-orbit performances in the first months after the launch are presented.

A Ku band 5 bit MEMS phase shifter for active electronically steerable phased array applications

NASA Astrophysics Data System (ADS)

Sharma, Anesh K.; Gautam, Ashu K.; Farinelli, Paola; Dutta, Asudeb; Singh, S. G.

2015-03-01

The design, fabrication and measurement of a 5 bit Ku band MEMS phase shifter in different configurations, i.e. a coplanar waveguide and microstrip, are presented in this work. The development architecture is based on the hybrid approach of switched and loaded line topologies. All the switches are monolithically manufactured on a 200 µm high resistivity silicon substrate using 4 inch diameter wafers. The first three bits (180°, 90° and 45°) are realized using switched microstrip lines and series ohmic MEMS switches whereas the fourth and fifth bits (22.5° and 11.25°) consist of microstrip line sections loaded by shunt ohmic MEMS devices. Individual bits are fabricated and evaluated for performance and the monolithic device is a 5 bit Ku band (16-18 GHz) phase shifter with very low average insertion loss of the order of 3.3 dB and a return loss better than 15 dB over the 32 states with a chip area of 44 mm2. A total phase shift of 348.75° with phase accuracy within 3° is achieved over all of the states. The performance of individual bits has been optimized in order to achieve an integrated performance so that they can be implemented into active electronically steerable antennas for phased array applications.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Leyva, A.; Cabal, A.; Pinera, I.

The present paper synthesizes the results obtained in the evaluation of a 64 microstrips crystalline silicon detector coupled to RX64 ASIC, designed for high-energy physics experiments, as a useful X-ray detector in advanced medical radiography, specifically in digital mammography. Research includes the acquisition of two-dimensional radiography of a mammography phantom using the scanning method, and the comparison of experimental profile with mathematically simulated one. The paper also shows the experimental images of three biological samples taken from breast biopsies, where it is possible to identify the presence of possible pathological tissues.

X-Band, 17-Watt Solid-State Power Amplifier

NASA Technical Reports Server (NTRS)

Mittskus, Anthony; Stone, Ernest; Boger, William; Burgess, David; Honda, Richard; Nuckolls, Carl

2005-01-01

An advanced solid-state power amplifier that can generate an output power of as much as 17 W at a design operating frequency of 8.4 GHz has been designed and constructed as a smaller, lighter, less expensive alternative to traveling-wave-tube X-band amplifiers and to prior solid-state X-band power amplifiers of equivalent output power. This amplifier comprises a monolithic microwave integrated circuit (MMIC) amplifier module and a power-converter module integrated into a compact package (see Figure 1). The amplifier module contains an input variable-gain amplifier (VGA), an intermediate driver stage, a final power stage, and input and output power monitors (see Figure 2). The VGA and the driver amplifier are 0.5-m GaAs-based metal semiconductor field-effect transistors (MESFETs). The final power stage contains four parallel high-efficiency, GaAs-based pseudomorphic high-electron-mobility transistors (PHEMTs). The gain of the VGA is voltage-variable over a range of 10 to 24 dB. To provide for temperature compensation of the overall amplifier gain, the gain-control voltage is generated by an operational-amplifier circuit that includes a resistor/thermistor temperature-sensing network. The driver amplifier provides a gain of 14 dB to an output power of 27 dBm to drive the four parallel output PHEMTs, each of which is nominally capable of putting out as much as 5 W. The driver output is sent to the input terminals of the four parallel PHEMTs through microstrip power dividers; the outputs of these PHEMTs are combined by microstrip power combiners (which are similar to the microstrip power dividers) to obtain the final output power of 17 W.

Solid state Ku-band spacecraft transmitters

NASA Technical Reports Server (NTRS)

Wisseman, W. R.; Tserng, H. Q.; Coleman, D. J.; Doerbeck, F. H.

1977-01-01

A transmitter is considered that consists of GaAs IMPATT and Read diodes operating in a microstrip circuit environment to provide amplification with a minimum of 63 db small signal gain and a minimum compressed gain at 5 W output of 57 db. Reported are Schottky-Read diode design and fabrication, microstrip and circulator optimization, preamplifier development, power amplifier development, dc-to-dc converter design, and integration of the breadboard transmitter modules. A four-stage power amplifier in cascade with a three-stage preamplifier had an overall gain of 56.5 db at 13.5 GHz with a power output of 4.5 W. A single-stage Read amplifier delivered 5.9 W with 4 db gain at 22% efficiency.

Quaternary pulse position modulation electronics for free-space laser communications

NASA Technical Reports Server (NTRS)

Budinger, J. M.; Kerslake, S. D.; Nagy, L. A.; Shalkhauser, M. J.; Soni, N. J.; Cauley, M. A.; Mohamed, J. H.; Stover, J. B.; Romanofsky, R. R.; Lizanich, P. J.

1991-01-01

The development of a high data-rate communications electronic subsystem for future application in free-space, direct-detection laser communications is described. The dual channel subsystem uses quaternary pulse position modulation (GPPM) and operates at a throughput of 650 megabits per second. Transmitting functions described include source data multiplexing, channel data multiplexing, and QPPM symbol encoding. Implementation of a prototype version in discrete gallium arsenide logic, radiofrequency components, and microstrip circuitry is presented.

Quaternary pulse position modulation electronics for free-space laser communications

NASA Technical Reports Server (NTRS)

Budinger, J. M.; Kerslake, S. D.; Nagy, L. A.; Shalkhauser, M. J.; Soni, N. J.; Cauley, M. A.; Mohamed, J. H.; Stover, J. B.; Romanofsky, R. R.; Lizanich, P. J.

1991-01-01

The development of a high data-rate communications electronic subsystem for future application in free-space, direct-detection laser communications is described. The dual channel subsystem uses quaternary pulse position modulation (QPPM) and operates at a throughput of 650 megabits per second. Transmitting functions described include source data multiplexing, channel data multiplexing, and QPPM symbol encoding. Implementation of a prototype version in discrete gallium arsenide logic, radiofrequency components, and microstrip circuitry is presented.

Investigation of a solid state power combining antenna proposed for use in the solar power satellite

NASA Technical Reports Server (NTRS)

Farmer, L. A.

1981-01-01

Performance tests performed on a four-feed microstrip antenna and feed network are analyzed. Frequency response with and without amplifiers, an investigation of noise threshold, phase tracking, and jitter are included. Recommendations for further development of SPS power conversion modules are also included.

The PAMELA experiment on satellite and its capability in cosmic rays measurements

NASA Astrophysics Data System (ADS)

Adriani, O.; Ambriola, M.; Barbarino, G.; Barbier, L. M.; Bartalucci, S.; Bazilevskaja, G.; Bellotti, R.; Bertazzoni, S.; Bidoli, V.; Boezio, M.; Bogomolov, E.; Bonechi, L.; Bonvicini, V.; Boscherini, M.; Bravar, U.; Cafagna, F.; Campana, D.; Carlson, P.; Casolino, M.; Castellano, M.; Castellini, G.; Christian, E. R.; Ciacio, F.; Circella, M.; D'Alessandro, R.; De Marzo, C. N.; De Pascale, M. P.; Finetti, N.; Furano, G.; Gabbanini, A.; Galper, A. M.; Giglietto, N.; Grandi, M.; Grigorjeva, A.; Guarino, F.; Hof, M.; Koldashov, S. V.; Korotkov, M. G.; Krizmanic, J. F.; Krutkov, S.; Lund, J.; Marangelli, B.; Marino, L.; Menn, W.; Mikhailov, V. V.; Mirizzi, N.; Mitchell, J. W.; Mocchiutti, E.; Moiseev, A. A.; Morselli, A.; Mukhametshin, R.; Ormes, J. F.; Osteria, G.; Ozerov, J. V.; Papini, P.; Pearce, M.; Perego, A.; Piccardi, S.; Picozza, P.; Ricci, M.; Salsano, A.; Schiavon, P.; Scian, G.; Simon, M.; Sparvoli, R.; Spataro, B.; Spillantini, P.; Spinelli, P.; Stephens, S. A.; Stochaj, S. J.; Stozhkov, Y.; Straulino, S.; Streitmatter, R. E.; Taccetti, F.; Tesi, M.; Vacchi, A.; Vannuccini, E.; Vasiljev, G.; Vignoli, V.; Voronov, S. A.; Yurkin, Y.; Zampa, G.; Zampa, N.

2002-02-01

The PAMELA& equipment will be assembled in 2001 and installed on board the Russian satellite Resurs. PAMELA is conceived mainly to study the antiproton and positron fluxes in cosmic rays up to high energy (190GeV for p¯ and 270GeV for e+) and to search antinuclei, up to 30GeV/n, with a sensitivity of 10-7 in the He/He ratio. The PAMELA telescope consists of: a magnetic spectrometer made up of a permanent magnet system equipped with double sided microstrip silicon detectors; a transition radiation detector made up of active layers of proportional straw tubes interleaved with carbon fibre radiators; and a silicon-tungsten imaging calorimeter made up of layers of tungsten absorbers and silicon detector planes. A time-of-flight system and anti-coincidence counters complete the PAMELA equipment. In the past years, tests have been done on each subdetector of PAMELA; the main results are presented and their implications on the anti-particles identification capability in cosmic rays are discussed here.

76 FR 78313 - Crystalline Silicon Photovoltaic Cells and Modules From China

Federal Register 2010, 2011, 2012, 2013, 2014

2011-12-16

...)] Crystalline Silicon Photovoltaic Cells and Modules From China Determinations On the basis of the record \\1... injured by reason of imports from China of crystalline silicon photovoltaic cells and modules, provided... imports of crystalline silicon photovoltaic cells and modules from China. Accordingly, effective October...

Electronic band-gap modified passive silicon optical modulator at telecommunications wavelengths.

PubMed

Zhang, Rui; Yu, Haohai; Zhang, Huaijin; Liu, Xiangdong; Lu, Qingming; Wang, Jiyang

2015-11-13

The silicon optical modulator is considered to be the workhorse of a revolution in communications. In recent years, the capabilities of externally driven active silicon optical modulators have dramatically improved. Self-driven passive modulators, especially passive silicon modulators, possess advantages in compactness, integration, low-cost, etc. Constrained by a large indirect band-gap and sensitivity-related loss, the passive silicon optical modulator is scarce and has been not advancing, especially at telecommunications wavelengths. Here, a passive silicon optical modulator is fabricated by introducing an impurity band in the electronic band-gap, and its nonlinear optics and applications in the telecommunications-wavelength lasers are investigated. The saturable absorption properties at the wavelength of 1.55 μm was measured and indicates that the sample is quite sensitive to light intensity and has negligible absorption loss. With a passive silicon modulator, pulsed lasers were constructed at wavelengths at 1.34 and 1.42 μm. It is concluded that the sensitive self-driven passive silicon optical modulator is a viable candidate for photonics applications out to 2.5 μm.

Microwave interconnection

NASA Astrophysics Data System (ADS)

Fry, P. E.

1993-06-01

A limited evaluation was made of two commonly found microwave interconnections: microstrip-to-microstrip and coaxial-to-microstrip. The evaluation attempted to select the interconnection technique which worked best for the particular interface type. Short ribbon wires worked best for the microstrip-to-microstrip interconnection. A published method of compensating the microstrip conductor had the best performance for the coaxial-to-microstrip interconnection. The work was conducted under the Microwave Technology Process Capability Assurance Program at Allied-Signal Inc., Kansas City Division.

OPTOELECTRONICS, FIBER OPTICS, AND OTHER ASPECTS OF QUANTUM ELECTRONICS: Effective matching of a microwave modulator to a laser diode in a selected band of gigahertz frequencies

NASA Astrophysics Data System (ADS)

Bliskavitskiĭ, A. A.; Vladimirov, Yu K.; Tambiev, Yu A.; Shelkov, N. V.

1989-08-01

Theoretical and experimental investigations were made of wide-band low-loss matching of an InGaAsP heterolaser to a microwave modulator in the gigahertz range. The results of panoramic measurements of the standing-wave ratio of the laser were used to estimate the components of the equivalent electrical circuit of the laser and to synthesize a passive microstrip matching circuit which increased by more than 10 dB the efficiency of modulation of the laser radiation intensity in a 2-3.4 GHz band of modulating frequencies.

Durable crystalline Si photovoltaic modules based on silicone-sheet encapsulants

NASA Astrophysics Data System (ADS)

Hara, Kohjiro; Ohwada, Hiroto; Furihata, Tomoyoshi; Masuda, Atsushi

2018-02-01

Crystalline Si photovoltaic (PV) modules were fabricated with sheets of poly(dimethylsiloxane) (silicone) as an encapsulant. The long-term durability of the silicone-encapsulated PV modules was experimentally investigated. The silicone-based modules enhanced the long-term durability against potential-induced degradation (PID) and a damp-heat (DH) condition at 85 °C with 85% relative humidity (RH). In addition, we designed and fabricated substrate-type Si PV modules based on the silicone encapsulant and an Al-alloy plate as the substratum, which demonstrated high impact resistance and high incombustible performance. The high chemical stability, high volume resistivity, rubber-like elasticity, and incombustibility of the silicone encapsulant resulted in the high durability of the modules. Our results indicate that silicone is an attractive encapsulation material, as it improves the long-term durability of crystalline Si PV modules.

Development of a custom on-line ultrasonic vapour analyzer and flow meter for the ATLAS inner detector, with application to Cherenkov and gaseous charged particle detectors

NASA Astrophysics Data System (ADS)

Alhroob, M.; Bates, R.; Battistin, M.; Berry, S.; Bitadze, A.; Bonneau, P.; Bousson, N.; Boyd, G.; Bozza, G.; Crespo-Lopez, O.; Degeorge, C.; Deterre, C.; DiGirolamo, B.; Doubek, M.; Favre, G.; Godlewski, J.; Hallewell, G.; Hasib, A.; Katunin, S.; Langevin, N.; Lombard, D.; Mathieu, M.; McMahon, S.; Nagai, K.; O'Rourke, A.; Pearson, B.; Robinson, D.; Rossi, C.; Rozanov, A.; Strauss, M.; Vacek, V.; Zwalinski, L.

2015-03-01

Precision sound velocity measurements can simultaneously determine binary gas composition and flow. We have developed an analyzer with custom microcontroller-based electronics, currently used in the ATLAS Detector Control System, with numerous potential applications. Three instruments monitor C3F8 and CO2 coolant leak rates into the nitrogen envelopes of the ATLAS silicon microstrip and Pixel detectors. Two further instruments will aid operation of the new thermosiphon coolant recirculator: one of these will monitor air leaks into the low pressure condenser while the other will measure return vapour flow along with C3F8/C2F6 blend composition, should blend operation be necessary to protect the ATLAS silicon tracker under increasing LHC luminosity. We describe these instruments and their electronics.

Vertex detectors: The state of the art and future prospects

DOE Office of Scientific and Technical Information (OSTI.GOV)

Damerell, C.J.S.

1997-01-01

We review the current status of vertex detectors (tracking microscopes for the recognition of charm and bottom particle decays). The reasons why silicon has become the dominant detector medium are explained. Energy loss mechanisms are reviewed, as well as the physics and technology of semiconductor devices, emphasizing the areas of most relevance for detectors. The main design options (microstrips and pixel devices, both CCD`s and APS`s) are discussed, as well as the issue of radiation damage, which probably implies the need to change to detector media beyond silicon for some vertexing applications. Finally, the evolution of key performance parameters overmore » the past 15 years is reviewed, and an attempt is made to extrapolate to the likely performance of detectors working at the energy frontier ten years from now.« less

77 FR 72884 - Crystalline Silicon Photovoltaic Cells and Modules From China

Federal Register 2010, 2011, 2012, 2013, 2014

2012-12-06

... Silicon Photovoltaic Cells and Modules From China Determinations On the basis of the record \\1\\ developed... imports of crystalline silicon photovoltaic cells and modules from China, provided for in subheadings 8501... silicon photovoltaic cells and modules from China. Chairman Irving A. Williamson and Commissioner Dean A...

77 FR 35425 - Crystalline Silicon Photovoltaic Cells and Modules From China; Scheduling of the Final Phase of...

Federal Register 2010, 2011, 2012, 2013, 2014

2012-06-13

... Silicon Photovoltaic Cells and Modules From China; Scheduling of the Final Phase of Countervailing Duty... silicon photovoltaic cells and modules, provided for in subheadings 8501.31.80, 8501.61.00, 8507.20.80... photovoltaic cells, and modules, laminates, and panels, consisting of crystalline silicon photovoltaic cells...

Study on Miniaturized UHF Antennas for Partial Discharge Detection in High-Voltage Electrical Equipment.

PubMed

Liu, Jingcun; Zhang, Guogang; Dong, Jinlong; Wang, Jianhua

2015-11-20

Detecting partial discharge (PD) is an effective way to evaluate the condition of high-voltage electrical equipment insulation. The UHF detection method has attracted attention due to its high sensitivity, strong interference resistance, and ability to locate PDs. In this paper, a miniaturized equiangular spiral antenna (ESA) for UHF detection that uses a printed circuit board is proposed. I-shaped, L-shaped, and C-shaped microstrip baluns were designed to match the impedance between the ESA and coaxial cable and were verified by a vector network analyzer. For comparison, three other types of UHF antenna were also designed: A microstrip patch antenna, a microstrip slot antenna, and a printed dipole antenna. Their antenna factors were calibrated in a uniform electric field of different frequencies modulated in a gigahertz transverse electromagnetic cell. We performed comparison experiments on PD signal detection using an artificial defect model based on the international IEC 60270 standard. We also conducted time-delay test experiments on the ESA sensor to locate a PD source. It was found that the proposed ESA sensor meets PD signal detection requirements. The sensor's compact size makes it suitable for internal installation in high-voltage electrical equipment.

Study on Miniaturized UHF Antennas for Partial Discharge Detection in High-Voltage Electrical Equipment

PubMed Central

Liu, Jingcun; Zhang, Guogang; Dong, Jinlong; Wang, Jianhua

2015-01-01

Detecting partial discharge (PD) is an effective way to evaluate the condition of high-voltage electrical equipment insulation. The UHF detection method has attracted attention due to its high sensitivity, strong interference resistance, and ability to locate PDs. In this paper, a miniaturized equiangular spiral antenna (ESA) for UHF detection that uses a printed circuit board is proposed. I-shaped, L-shaped, and C-shaped microstrip baluns were designed to match the impedance between the ESA and coaxial cable and were verified by a vector network analyzer. For comparison, three other types of UHF antenna were also designed: A microstrip patch antenna, a microstrip slot antenna, and a printed dipole antenna. Their antenna factors were calibrated in a uniform electric field of different frequencies modulated in a gigahertz transverse electromagnetic cell. We performed comparison experiments on PD signal detection using an artificial defect model based on the international IEC 60270 standard. We also conducted time-delay test experiments on the ESA sensor to locate a PD source. It was found that the proposed ESA sensor meets PD signal detection requirements. The sensor’s compact size makes it suitable for internal installation in high-voltage electrical equipment. PMID:26610506

Performance of a Wideband Cadmium Ferrite Microstrip Patch Antenna in the X-Band Region

NASA Astrophysics Data System (ADS)

Bhongale, S. R.; Ingavale, H. R.; Shinde, T. J.; Vasambekar, P. N.

2018-01-01

Magnesium-substituted cadmium ferrites with the chemical composition Mg x Cd1- x Fe2O4 ( x = 0, 0.4 and 0.8) were prepared by an oxalate co-precipitation method under microwave sintering technique. The structural properties of ferrites were studied by x-ray diffraction, Fourier transform infrared spectroscopy and field emission scanning electron microscope techniques. The scattering parameters such as reflection coefficient ( S 11) and transmission coefficient ( S 21) at microwave frequencies of palletized ferrites were measured by using a vector network analyzer. The software module 85071E followed by scattering parameters was used to determine the electromagnetic properties of the ferrites. The values determined for electromagnetic parameters such as the real part of permittivity ( ɛ'), permeability ( μ'), dielectric loss tangent (tan δ e) and magnetic loss tangent (tan δ m) of synthesized ferrites were used to design rectangular microstrip patch antennas. The performance of magnesium-substituted Cd ferrites as substrate for microstrip patch antennas was investigated. The antenna parameters such as return loss, bandwidth, voltage standing wave ratio, Smith chart and radiation pattern were studied. It is found that the Cd ferrite has applicability as a substrate for wideband antennas in the X-band region.

Search for WW and WZ production in lepton, neutrino plus jets final states at CDF Run II and Silicon module production and detector control system for the ATLAS SemiConductor Tracker

DOE Office of Scientific and Technical Information (OSTI.GOV)

Sfyrla, Anna

2008-03-10

In the first part of this work, we present a search for WW and WZ production in charged lepton, neutrino plus jets final states produced in pmore » $$\\bar{p}$$ collisions with √s = 1.96 TeV at the Fermilab Tevatron, using 1.2 fb -1 of data accumulated with the CDF II detector. This channel is yet to be observed in hadron colliders due to the large singleWplus jets background. However, this decay mode has a much larger branching fraction than the cleaner fully leptonic mode making it more sensitive to anomalous triple gauge couplings that manifest themselves at higher transverse W momentum. Because the final state is topologically similar to associated production of a Higgs boson with a W, the techniques developed in this analysis are also applicable in that search. An Artificial Neural Network has been used for the event selection optimization. The theoretical prediction for the cross section is σ WW/WZ theory x Br(W → ℓv; W/Z → jj) = 2.09 ± 0.14 pb. They measured N Signal = 410 ± 212(stat) ± 102(sys) signal events that correspond to a cross section σ WW/WZ x Br(W → ℓv; W/Z → jj) = 1.47 ± 0.77(stat) ± 0.38(sys) pb. The 95% CL upper limit to the cross section is estimated to be σ x Br(W → ℓv; W/Z → jj) < 2.88 pb. The second part of the present work is technical and concerns the ATLAS SemiConductor Tracker (SCT) assembly phase. Although technical, the work in the SCT assembly phase is of prime importance for the good performance of the detector during data taking. The production at the University of Geneva of approximately one third of the silicon microstrip end-cap modules is presented. This collaborative effort of the university of Geneva group that lasted two years, resulted in 655 produced modules, 97% of which were good modules, constructed within the mechanical and electrical specifications and delivered in the SCT collaboration for assembly on the end-cap disks. The SCT end-caps and barrels consist of 4088 silicon modules, with a total of 6.3 million readout channels. The coherent and safe operation of the SCT during commissioning and subsequent operation is the essential task of the Detector Control System (DCS). The main building blocks of the DCS are the cooling system, the power supplies and the environmental system. The DCS has been initially developed for the SCT assembly phase and this system is described in the present work. Particular emphasis is given in the environmental hardware and software components, that were my major contributions. Results from the DCS testing during the assembly phase are also reported.« less

Low-Loss, Low-Noise, Crystalline and Amorphous Silicon Dielectrics for Superconducting Microstriplines and Kinetic Inductance Detector Capacitors

NASA Astrophysics Data System (ADS)

Golwala, Sunil

Prospective future PCOS (Inflation Probe) and COR (Origins Space Telescope, FIR Interferometer) missions require large arrays of highly sensitive millimeter-wave and submillimeter (mm/submm) detectors, including spectroscopic detectors. A number of technology developments in superconducting sensors for these applications require lowloss dielectric thin films. Examples include: Microstrip-coupled superconducting mm/submm detectors, which rely on superconductor-dielectric-superconductor microstrip transmission line to transmit optical power from a coherent reception element (feed horn, lens coupled antenna, phased-array antenna) to detectors; Superconducting spectrometers (SuperSpec, TIME, MicroSpec), which use such microstrip to route optical power to detectors and to define spectral channels; Kinetic inductance detectors (KIDs), which use capacitors. In the above, the dielectric loss, quantified by the loss tangent (tan delta), is critical: it determines the optical loss in the microstrip, the resolution of spectral channels, and the two-level-system (TLS) dielectric fluctuation noise of the KID capacitor. Currently, the amorphous dielectrics SiO2 and SiNx are used because they are most convenient for fabrication. They have tan delta 1e-3. This loss tangent is acceptable for microstripline but severely limits the possible architectures and spectral resolving power, and it is too large for KID capacitors. Lower loss dielectric would result in a quantum leap in capability, opening up design space heretofore inaccessible and enabling design innovations. Specific impacts on the above technologies would be: For phased-array antennas, lower optical loss would allow the detectors to be moved away from the antenna, allowing them to be shielded from absorption of light that has not been spatially or spectrally filtered and also obviating long wiring busses. More sophisticated antenna designs, such as multiscale antennas covering a decade of spectral bandwidth, could be entertained; For superconducting spectrometers, lower loss would improve the spectral resolution limit, Rmax = (1/tan delta), from 1e3 to 2e5, sufficient for resolved extragalactic mm/submm spectroscopy, where intrinsic line widths are dnu/nu 1e-4 to 1e-3; For KIDs, the interdigitated capacitors (IDC) currently used could be replaced by parallel-plate capacitors 40 times smaller in area, presenting a number of advantages over IDCs in properties such as focal plane fill factor and mounting architecture, direct absorption, and inter-KID coupling. There exist two paths in the literature to lower loss: hydrogenated amorphous silicon (aSi:H) and crystalline silicon (cSi). Crystalline silicon intrinsically has tan delta < 5e-6, 200 times lower than SiO2 and SiNx. a-Si:H has been demonstrated with tan delta < 5e5, not as good as cSi but still 20 times better than SiO2 and SiNx. We will pursue the development of both options due their complementary advantages and challenges. While a process has already been demonstrated for 5 um cSi with delta < 1e-4 and consistent with other design/fabrication constraints, it has not been shown yet that this can be extended to more convenient 1 um and 2 um thicknesses. a-Si:H has been demonstrated to have tan delta < 1e-4, but the fabrication recipe is almost certainly machine-specific and may not be compatible with focal plane array fabrication due to adhesion or stress issues. Given the uncertainties and different constraints imposed by the two processes, it is sensible to pursue both. This development would contribute to filling the Critical Technology Gaps identified in the 2016 PCOS and COR Program Annual Technology Reports, specifically the PCOS “Advanced millimeter-wave focal plane arrays for CMB polarimetry” gap and the COR “Large-format, low-noise far-infrared and ultralow noise (FIR) direct detectors” and “Compact, Integrated Spectrometers for 100 to 1000 um” gaps.

The high energy cosmic-radiation detection (HERD) facility onboard China's Space Station

NASA Astrophysics Data System (ADS)

Zhang, S. N.; Adriani, O.; Albergo, S.; Ambrosi, G.; An, Q.; Bao, T. W.; Battiston, R.; Bi, X. J.; Cao, Z.; Chai, J. Y.; Chang, J.; Chen, G. M.; Chen, Y.; Cui, X. H.; Dai, Z. G.; D'Alessandro, R.; Dong, Y. W.; Fan, Y. Z.; Feng, C. Q.; Feng, H.; Feng, Z. Y.; Gao, X. H.; Gargano, F.; Giglietto, N.; Gou, Q. B.; Guo, Y. Q.; Hu, B. L.; Hu, H. B.; He, H. H.; Huang, G. S.; Huang, J.; Huang, Y. F.; Li, H.; Li, L.; Li, Y. G.; Li, Z.; Liang, E. W.; Liu, H.; Liu, J. B.; Liu, J. T.; Liu, S. B.; Liu, S. M.; Liu, X.; Lu, J. G.; Mazziotta, M. N.; Mori, N.; Orsi, S.; Pearce, M.; Pohl, M.; Quan, Z.; Ryde, F.; Shi, H. L.; Spillantini, P.; Su, M.; Sun, J. C.; Sun, X. L.; Tang, Z. C.; Walter, R.; Wang, J. C.; Wang, J. M.; Wang, L.; Wang, R. J.; Wang, X. L.; Wang, X. Y.; Wang, Z. G.; Wei, D. M.; Wu, B. B.; Wu, J.; Wu, X.; Wu, X. F.; Xia, J. Q.; Xiao, H. L.; Xu, H. H.; Xu, M.; Xu, Z. Z.; Yan, H. R.; Yin, P. F.; Yu, Y. W.; Yuan, Q.; Zha, M.; Zhang, L.; Zhang, L.; Zhang, L. Y.; Zhang, Y.; Zhang, Y. J.; Zhang, Y. L.; Zhao, Z. G.

2014-07-01

The High Energy cosmic-Radiation Detection (HERD) facility is one of several space astronomy payloads of the cosmic lighthouse program onboard China's Space Station, which is planned for operation starting around 2020 for about 10 years. The main scientific objectives of HERD are indirect dark matter search, precise cosmic ray spectrum and composition measurements up to the knee energy, and high energy gamma-ray monitoring and survey. HERD is composed of a 3-D cubic calorimeter (CALO) surrounded by microstrip silicon trackers (STKs) from five sides except the bottom. CALO is made of about 104 cubes of LYSO crystals, corresponding to about 55 radiation lengths and 3 nuclear interaction lengths, respectively. The top STK microstrips of seven X-Y layers are sandwiched with tungsten converters to make precise directional measurements of incoming electrons and gamma-rays. In the baseline design, each of the four side SKTs is made of only three layers microstrips. All STKs will also be used for measuring the charge and incoming directions of cosmic rays, as well as identifying back scattered tracks. With this design, HERD can achieve the following performance: energy resolution of 1% for electrons and gamma-rays beyond 100 GeV, 20% for protons from 100 GeV to 1 PeV; electron/proton separation power better than 10-5; effective geometrical factors of >3 m2sr for electron and diffuse gamma-rays, >2 m2sr for cosmic ray nuclei. R and D is under way for reading out the LYSO signals with optical fiber coupled to image intensified CCD and the prototype of one layer of CALO.

Space qualification tests of the PAMELA instrument

NASA Astrophysics Data System (ADS)

Sparvoli, R.; Basili, A.; Bencardino, R.; Casolino, M.; de Pascale, M. P.; Furano, G.; Menicucci, A.; Minori, M.; Morselli, A.; Picozza, P.; Wischnewski, R.; Bakaldin, A.; Galper, A. M.; Koldashov, S. V.; Korotkov, M. G.; Mikhailov, V. V.; Voronov, S. A.; Yurkin, Y.; Adriani, O.; Bonechi, L.; Bongi, M.; Papini, P.; Ricciarini, S. B.; Spillantini, P.; Straulino, S.; Taccetti, F.; Vannuccini, E.; Castellini, G.; Boezio, M.; Bonvicini, M.; Mocchiutti, E.; Schiavon, P.; Vacchi, A.; Zampa, G.; Zampa, N.; Carlson, P.; Lund, J.; Lundquist, J.; Orsi, S.; Pearce, M.; Barbarino, G. C.; Campana, D.; Osteria, G.; Rossi, G.; Russo, S.; Boscherini, M.; Menn, W.; Simon, M.; Bongiorno, L.; Ricci, M.; Ambriola, M.; Bellotti, R.; Cafagna, F.; Circella, M.; de Marzo, C.; Giglietto, N.; Mirizzi, N.; Romita, M.; Spinelli, P.; Bogomolov, E.; Krutkov, S.; Vasiljev, G.; Bazilevskaja, G. A.; Kvashnin, A. N.; Logachev, V. I.; Makhmutov, V. S.; Maksumov, O. S.; Stozhkov, Yu. I.; Mitchell, J. W.; Streitmatter, R. E.; Stochaj, S. J.

PAMELA is a satellite-borne experiment which will measure the antiparticle component of cosmic rays over an extended energy range and with unprecedented accuracy. The apparatus consists of a permanent magnetic spectrometer equipped with a double-sided silicon microstrip tracking system and surrounded by a scintillator anticoincidence system. A silicon tungsten imaging calorimeter, complemented by a scintillator shower tail catcher, and a transition radiation detector perform the particle identification task. Fast scintillators are used for Time-of-Flight measurements and to provide the primary trigger. A neutron detector is finally provided to extend the range of particle measurements to the TeV region. PAMELA will fly on-board of the Resurs-DK1 satellite, which will be put into a semi-polar orbit in 2005 by a Soyuz rocket. We give a brief review of the scientific issues of the mission and report about the status of the experiment few months before the launch.

Feasibility study for future implantable neural-silicon interface devices.

PubMed

Al-Armaghany, Allann; Yu, Bo; Mak, Terrence; Tong, Kin-Fai; Sun, Yihe

2011-01-01

The emerging neural-silicon interface devices bridge nerve systems with artificial systems and play a key role in neuro-prostheses and neuro-rehabilitation applications. Integrating neural signal collection, processing and transmission on a single device will make clinical applications more practical and feasible. This paper focuses on the wireless antenna part and real-time neural signal analysis part of implantable brain-machine interface (BMI) devices. We propose to use millimeter-wave for wireless connections between different areas of a brain. Various antenna, including microstrip patch, monopole antenna and substrate integrated waveguide antenna are considered for the intra-cortical proximity communication. A Hebbian eigenfilter based method is proposed for multi-channel neuronal spike sorting. Folding and parallel design techniques are employed to explore various structures and make a trade-off between area and power consumption. Field programmable logic arrays (FPGAs) are used to evaluate various structures.

Adjusting Permittivity by Blending Varying Ratios of SWNTs

NASA Technical Reports Server (NTRS)

Tour, James M.; Stephenson, Jason J.; Higginbotham, Amanda

2012-01-01

A new composite material of singlewalled carbon nanotubes (SWNTs) displays radio frequency (0 to 1 GHz) permittivity properties that can be adjusted based upon the nanotube composition. When varying ratios of raw to functionalized SWNTs are blended into the silicone elastomer matrix at a total loading of 0.5 percent by weight, a target real permittivity value can be obtained between 70 and 3. This has particular use for designing materials for microwave lenses, microstrips, filters, resonators, high-strength/low-weight electromagnetic interference (EMI) shielding, antennas, waveguides, and low-loss magneto-dielectric products for applications like radome construction.

Demonstration of low power penalty of silicon Mach-Zehnder modulator in long-haul transmission.

PubMed

Yi, Huaxiang; Long, Qifeng; Tan, Wei; Li, Li; Wang, Xingjun; Zhou, Zhiping

2012-12-03

We demonstrate error-free 80km transmission by a silicon carrier-depletion Mach-Zehnder modulator at 10Gbps and the power penalty is as low as 1.15dB. The devices were evaluated through the bit-error-rate characterizations under the system-level analysis. The silicon Mach-Zehnder modulator was also analyzed comparatively with a lithium niobate Mach-Zehnder modulator in back-to-back transmission and long-haul transmission, respectively, and verified the negative chirp parameter of the silicon modulator through the experiment. The result of low power penalty indicates a practical application for the silicon modulator in the middle- or long-distance transmission systems.

The Use of Metal Filled Via Holes for Improving Isolation in LTCC RF and Wireless Multichip Packages

NASA Technical Reports Server (NTRS)

Ponchak, George E.; Chun, Donghoon; Yook, Jong-Gwan; Katehi, Linda P. B.

1999-01-01

LTCC MCMs (Low Temperature Cofired Ceramic MultiChip Module) for RF and wireless systems often use metal filled via holes to improve isolation between the stripline and microstrip interconnects. In this paper, results from a 3D-FEM electromagnetic characterization of microstrip and stripline interconnects with metal filled via fences for isolation are presented. It is shown that placement of a via hole fence closer than three times the substrate height to the transmission lines increases radiation and coupling. Radiation loss and reflections are increased when a short via fence is used in areas suspected of having high radiation. Also, via posts should not be separated by more than three times the substrate height for low radiation loss, coupling, and suppression of higher order modes in a package.

Development of horn antenna mixer array with internal local oscillator module for microwave imaging diagnostics

DOE Office of Scientific and Technical Information (OSTI.GOV)

Kuwahara, D., E-mail: dkuwahar@cc.tuat.ac.jp; Ito, N.; Nagayama, Y.

A new antenna array is proposed in order to improve the sensitivity and complexity of microwave imaging diagnostics systems such as a microwave imaging reflectometry, a microwave imaging interferometer, and an electron cyclotron emission imaging. The antenna array consists of five elements: a horn antenna, a waveguide-to-microstrip line transition, a mixer, a local oscillation (LO) module, and an intermediate frequency amplifier. By using an LO module, the LO optics can be removed, and the supplied LO power to each element can be equalized. We report details of the antenna array and characteristics of a prototype antenna array.

Development of horn antenna mixer array with internal local oscillator module for microwave imaging diagnostics.

PubMed

Kuwahara, D; Ito, N; Nagayama, Y; Yoshinaga, T; Yamaguchi, S; Yoshikawa, M; Kohagura, J; Sugito, S; Kogi, Y; Mase, A

2014-11-01

A new antenna array is proposed in order to improve the sensitivity and complexity of microwave imaging diagnostics systems such as a microwave imaging reflectometry, a microwave imaging interferometer, and an electron cyclotron emission imaging. The antenna array consists of five elements: a horn antenna, a waveguide-to-microstrip line transition, a mixer, a local oscillation (LO) module, and an intermediate frequency amplifier. By using an LO module, the LO optics can be removed, and the supplied LO power to each element can be equalized. We report details of the antenna array and characteristics of a prototype antenna array.

An electro-optic modulator-assisted wavevector-resolving Brillouin light scattering setup.

PubMed

Neumann, T; Schneider, T; Serga, A A; Hillebrands, B

2009-05-01

Brillouin light scattering spectroscopy is a powerful technique which incorporates several extensions such as space-, time-, phase-, and wavevector-resolution. Here, we report on the improvement of the wavevector-resolving setup by including an electro-optic modulator. This provides a reference to calibrate the position of the diaphragm hole which is used for wavevector selection. The accuracy of this calibration is only limited by the accuracy of the wavevector measurement itself. To demonstrate the validity of the approach the wavevectors of dipole-dominated spin waves excited by a microstrip antenna were measured.

Dual-Band Microstrip Antenna With Reactive Loading

NASA Technical Reports Server (NTRS)

Davidson, Shayla E.

1988-01-01

Effective but bulky coaxial stub replaced. Short-circuited microstrip transmission line serves as reactive loading element for microstrip antenna. Constructed integrally with stripline radiating element, shorted line preserves low microstrip profile and enables tuning of antenna for two-band operation.

Analysis of single band and dual band graphene based patch antenna for terahertz region

NASA Astrophysics Data System (ADS)

George, Jemima Nissiyah; Madhan, M. Ganesh

2017-10-01

A microstrip patch antenna is designed using a very thin layer of graphene as the radiating patch, which is fed by a microstrip transmission line. The graphene based patch is designed on a silicon substrate having a dielectric constant of 11.9, to radiate at a single frequency of 2.6 THz. Further, this antenna is made to resonate at dual frequencies of 2.48 THz and 3.35 THz, by changing the substrate height, which is reported for the first time. Various antenna parameters such as return loss, VSWR, gain, efficiency and bandwidth are also determined for the single and dual band operation. For the single band operation, a bandwidth of 145.4 GHz and an efficiency of 92% was achieved. For dual band operation, a maximum bandwidth of 140.5 GHz was obtained at 3.35 THz and an efficiency of 87.3% was obtained at the first resonant frequency of 2.48 THz. The absorption cross section of the antenna is also analysed for various substrate heights and has maximum peaks at the corresponding resonating frequencies. The simulation has been carried out by using a full wave electromagnetic simulator based on FDTD method.

Microstrip antenna developments at JPL

NASA Technical Reports Server (NTRS)

Huang, John

1991-01-01

The in-house development of microstrip antennas, initiated in 1981, when a spaceborne lightweight and low-profile planar array was needed for a satellite communication system, is described. The work described covers the prediction of finite-ground-plane effects by the geometric theory of diffraction, higher-order-mode circularly polarized circular patch antennas, circularly polarized microstrip arrays with linearly polarized elements, an impedance-matching teardrop-shaped probe feed, a dual-polarized microstrip array with high isolation and low cross-polarization, a planar microstrip Yagi array, a microstrip reflectarray, a Ka-band MMIC array, and a series-fed linear arrays.

Silicon-based antenna-coupled polarization-sensitive millimeter-wave bolometer arrays for cosmic microwave background instruments

NASA Astrophysics Data System (ADS)

Rostem, Karwan; Ali, Aamir; Appel, John W.; Bennett, Charles L.; Brown, Ari; Chang, Meng-Ping; Chuss, David T.; Colazo, Felipe A.; Costen, Nick; Denis, Kevin L.; Essinger-Hileman, Tom; Hu, Ron; Marriage, Tobias A.; Moseley, Samuel H.; Stevenson, Thomas R.; U-Yen, Kongpop; Wollack, Edward J.; Xu, Zhilei

2016-07-01

We describe feedhorn-coupled polarization-sensitive detector arrays that utilize monocrystalline silicon as the dielectric substrate material. Monocrystalline silicon has a low-loss tangent and repeatable dielectric constant, characteristics that are critical for realizing efficient and uniform superconducting microwave circuits. An additional advantage of this material is its low specific heat. In a detector pixel, two Transition-Edge Sensor (TES) bolometers are antenna-coupled to in-band radiation via a symmetric planar orthomode transducer (OMT). Each orthogonal linear polarization is coupled to a separate superconducting microstrip transmission line circuit. On-chip filtering is employed to both reject out-of-band radiation from the upper band edge to the gap frequency of the niobium superconductor, and to flexibly define the bandwidth for each TES to meet the requirements of the application. The microwave circuit is compatible with multi-chroic operation. Metalized silicon platelets are used to define the backshort for the waveguide probes. This micro-machined structure is also used to mitigate the coupling of out-of-band radiation to the microwave circuit. At 40 GHz, the detectors have a measured efficiency of ˜90%. In this paper, we describe the development of the 90 GHz detector arrays that will be demonstrated using the Cosmology Large Angular Scale Surveyor (CLASS) ground-based telescope.

76 FR 81914 - Crystalline Silicon Photovoltaic Cells, Whether or Not Assembled Into Modules, From the People's...

Federal Register 2010, 2011, 2012, 2013, 2014

2011-12-29

... Photovoltaic Cells, Whether or Not Assembled Into Modules, From the People's Republic of China: Postponement of... investigation of crystalline silicon photovoltaic cells, whether or not assembled into modules, from the People..., 2012. \\1\\ See Crystalline Silicon Photovoltaic Cells, Whether or Not Assembled Into Modules, From the...

Advanced infrared laser modulator development

NASA Technical Reports Server (NTRS)

Cheo, P. K.; Wagner, R.; Gilden, M.

1984-01-01

A parametric study was conducted to develop an electrooptic waveguide modulator for generating continuous tunable sideband power from an infrared CO2 laser. Parameters included were the waveguide configurations, microstrip dimensions device impedance, and effective dielectric constants. An optimum infrared laser modulator was established and was fabricated. This modulator represents the state-of-the-art integrated optical device, which has a three-dimensional topology to accommodate three lambda/4 step transformers for microwave impedance matching at both the input and output terminals. A flat frequency response of the device over 20 HGz or = 3 dB) was achieved. Maximum single sideband to carrier power greater than 1.2% for 20 W microwave input power at optical carrier wavelength of 10.6 microns was obtained.

Transparent graphene microstrip filters for wireless communications

NASA Astrophysics Data System (ADS)

Wang, Jinchen; Guan, Yifei; Yu, Hua; Li, Na; Wang, Shuopei; Shen, Cheng; Dai, Zhijiang; Gan, Decheng; Yang, Rong; He, Songbai; Zhang, Guangyu

2017-08-01

A microstrip is an indispensable component for wireless communication circuits. With the development of 5G technology, optically transparent microstrip filters urgently need to be developed. In this work, we have theoretically and experimentally demonstrated the immense potential of graphene microstrips for transparent wireless communication circuits in the 5G era. Both wideband and dual-band transparent graphene microstrip filters have shown more than 80% optical transmissivity in the region from 250 nm to 2000 nm with good frequency responses. S and C band microwave signals can transmit along the graphene microstrip lines effectively while coupling excitations produce relatively large insertion losses. Our results show that transparent microstrips designed with high-quality graphene will largely scale down the size of the wireless devices and thus play an irreplaceable role in the 5G era.

Broadband Via-Less Microwave Crossover Using Microstrip-CPW Transitions

NASA Technical Reports Server (NTRS)

Stevenson, Thomas; U-Yen, Kongpop; Wollack, Edward; Moseley, Samuel; Hsieh, Wen-Ting

2011-01-01

The front-to-back interface between microstrip and CPW (coplanar waveguide) typically requires complex fabrication or has high radiation loss. The microwave crossover typically requires a complex fabrication step. The prior art in microstrip-CPW transition requires a physical vias connection between the microstrip and CPW line on a separate layer. The via-less version of this transition was designed empirically and does not have a close form solution. The prior art of the micro wave crossover requires either additional substrate or wire bond as an air bridge to isolate two microwave lines at the crossing junction. The disadvantages are high radiation loss, no analytical solution to the problem, lengthy simulation time, and complex fabrication procedures to generate air bridges or via. The disadvantage of the prior crossover is a complex fabrication procedure, which also affects the device reliability and yield. This microstrip-CPW transition is visualized as two microstrip-slotline transitions combined in a way that the radiation from two slotlines cancels each other out. The invention is designed based on analytical methods; thus, it significantly reduces the development time. The crossover requires no extra layer to cross two microwave signals and has low radiation loss. The invention is simple to fabricate and design. It produces low radiation loss and can be designed with low insertion loss, with some tradeoff with signal isolation. The microstrip-CPW transition is used as an interface to connect between the device and the circuit outside the package. The via-less microwave crossover is used to allow two signals to cross without using an extra layer or fabrication processing step to enable this function. This design allows the solution to be determined entirely though analytical techniques. In addition, a planar via-less microwave crossover using this technique was proposed. The experimental results show that the proposed crossover at 5 GHz has a minimum isolation of 32 dB. It also has low in-band insertion loss and return loss of 1.2 dB and 18 dB, respectively, over more than 44 percent of bandwidth at room temperature. This microstrip-CPW transition requires the microstrip line to be split into two sections. Each section is connected to a microstrip quarter-wavelength openended stub. A slotline is also placed perpendicular to the microstrip section. The slot is connected to a grounded-end quarter-wavelength slotline and generates a microstrip-slotline transition. When two of these sections are placed in parallel and with the microstrip section combined at transition, a microstrip- CPW transition is formed. The slotline radiation is suppressed as two slots are excited with the electric field in an opposite direction, which cancels the radiation in far field. The invention on the crossover consists of the invented microstrip-CPW transitions combined back-to-back and a microstrip low-pass filter. One signal is crossed through to the microstrip layer, while the other signal is crossed through the CPW line located on the ground plane of the microstrip line. The microstrip low-pass filter produces a narrow line at the crossing point to enhance the system isolation. It also produces broadband response in the operating frequency band. The microstrip-CPW transition allows a microwave signal to travel from microstrip line to CPW line with low radiation loss. The crossover allows two microwave signals to cross with minimal parasitic coupling.

Silicon optical modulators for optical digital and analog communications (Conference Presentation)

NASA Astrophysics Data System (ADS)

Yang, Lin; Ding, Jianfeng; Zhang, Lei; Shao, Sizu

2017-02-01

Silicon photonics is considered as a promising technology to overcome the difficulties of the existing digital and analog optical communication systems, such as low integration, high cost, and high power consumption. Silicon optical modulator, as a component to transfer data from electronic domain to optical one, has attracted extensive attentions in the past decade. In this paper, we review the statuses of the silicon optical modulators for digital and analog optical communications and introduce our efforts on these topics. We analyze the relationship between the performance and the structural parameters of the silicon optical modulator and present how to optimize its performance including electro-optical bandwidth, modulation efficiency, optical bandwidth and insertion loss. The fabricated silicon optical modulator has an electro-optical bandwidth of 30 GHz. Its extinction ratios are 14.0 dB, 11.2 dB and 9.0 dB at the speeds of 40 Gbps, 50 Gbps and 64 Gbps for OOK modulation. The high extinction ratio of the silicon optical modulator at the high speed makes it very appropriate for the application of optical coherent modulation, such as QPSK and 16-QAM. The fabricated silicon optical modulator also can be utilized for analog optical communication. With respect to a noise floor of -165 dBc, the dynamic ranges for the second-order harmonic and the third-order intermodulation distortion are 90.8 dB and 110.5 dB respectively. By adopting a differential driving structure, the dynamic range for the second-order harmonic can be further improved to 100.0 dB while the third-order intermodulation distortion remains the same level.

Contact flexible microstrip applicators (CFMA) in a range from microwaves up to short waves.

PubMed

Gelvich, Edward A; Mazokhin, Vladimir N

2002-09-01

Contact flexible microstrip applicator (CFMA) is a new light-weight microstrip applicator type for superficial and deep local hyperthermia. Typical specimens are developed for operation at frequencies of 434, 70, 40, and 27 MHz. The main common features of CFMA, namely, their flexibility and light weight, as well as their aperture dimensions slightly depend on the operating frequency. Two antenna types are used in CFMAs: inductive antennas with a radiating plane electrical dipole at microwaves, and coplanar capacitive antennas, providing depression of the normal component of the electrical field in the very high-frequency (VHF) and high-frequency (HF) range. The flexibility of the applicators enables one to conform them with curved surfaces. In a bent state of the applicators there arises a focusing effect of energy deposition in deeper located tissues due to linear polarization of the irradiated electromagnetic (EM) field, inherent in CFMA. All CFMA are integrated with silicon water boluses which serve as a matching element, so as a skin cooling agent. Due to this and to the predominance of the tangential electrical component in the radiated EM field, no fat overheating effects are noticed, as a rule. The aperture of the developed applicators overlap the range 160-630 cm2 providing effective heating field sizes (EFSs) 64-400 cm2, respectively. The most bulky CFMAs with an aperture of (21 x 29) cm2 operating at the frequency of 434 MHz weigh 0.8 kg and 2.5 kg at 27 MHz. Phenomenological analysis of the radiating systems, as well as experimental evaluation of the applicators are presented. CFMAs operating at frequencies of 434 and 40 MHz are used in clinical practice. CFMA at 70 and 27 MHz are subjected to laboratory clinical investigations.

Low Loss Superconducting Microstrip Development at Argonne National Lab

DOE PAGES

Chang, C. L.; Ade, P. A. R.; Ahmed, Z.; ...

2014-11-20

Low loss superconducting microstrip is an essential component in realizing 100 kilo-pixel multichroic cosmic microwave background detector arrays. In this paper, we have been developing a low loss microstrip by understanding and controlling the loss mechanisms. We present the fabrication of the superconducting microstrip, the loss measurements at a few GHz frequencies using half-wavelength resonators, and the loss measurements at 220 GHz frequencies with the superconducting microstrip coupled to slot antennas at one end and to TES detectors at the other end. Finally, the measured loss tangent of the microstrip made of sputtered Nb and SiOx is 1-2e-3.

Silicon Modulators, Switches and Sub-systems for Optical Interconnect

NASA Astrophysics Data System (ADS)

Li, Qi

Silicon photonics is emerging as a promising platform for manufacturing and integrating photonic devices for light generation, modulation, switching and detection. The compatibility with existing CMOS microelectronic foundries and high index contrast in silicon could enable low cost and high performance photonic systems, which find many applications in optical communication, data center networking and photonic network-on-chip. This thesis first develops and demonstrates several experimental work on high speed silicon modulators and switches with record performance and novel functionality. A 8x40 Gb/s transmitter based on silicon microrings is first presented. Then an end-to-end link using microrings for Binary Phase Shift Keying (BPSK) modulation and demodulation is shown, and its performance with conventional BPSK modulation/ demodulation techniques is compared. Next, a silicon traveling-wave Mach- Zehnder modulator is demonstrated at data rate up to 56 Gb/s for OOK modulation and 48 Gb/s for BPSK modulation, showing its capability at high speed communication systems. Then a single silicon microring is shown with 2x2 full crossbar switching functionality, enabling optical interconnects with ultra small footprint. Then several other experiments in the silicon platform are presented, including a fully integrated in-band Optical Signal to Noise Ratio (OSNR) monitor, characterization of optical power upper bound in a silicon microring modulator, and wavelength conversion in a dispersion-engineered waveguide. The last part of this thesis is on network-level application of photonics, specically a broadcast-and-select network based on star coupler is introduced, and its scalability performance is studied. Finally a novel switch architecture for data center networks is discussed, and its benefits as a disaggregated network are presented.

60-GHz integrated-circuit high data rate quadriphase shift keying exciter and modulator

NASA Technical Reports Server (NTRS)

Grote, A.; Chang, K.

1984-01-01

An integrated-circuit quadriphase shift keying (QPSK) exciter and modulator have demonstrated excellent performance directly modulating a carrier frequency of 60 GHz with an output phase error of less than 3 degrees and maximum amplitude error of 0.5 dB. The circuit consists of a 60-GHz Gunn VCO phase-locked to a low-frequency reference source, a 4th subharmonic mixer, and a QPSK modlator packaged into a small volume of 1.8 x 2.5 x 0.35 in. The use of microstrip has the advantages of small size, light-weight, and low-cost fabrication. The unit has the potential for multigigabit data rate applications.

77 FR 4764 - Crystalline Silicon Photovoltaic Cells, Whether or Not Assembled Into Modules, From the People's...

Federal Register 2010, 2011, 2012, 2013, 2014

2012-01-31

... Photovoltaic Cells, Whether or Not Assembled Into Modules, From the People's Republic of China: Second... preliminary determination of the countervailing duty investigation of crystalline silicon photovoltaic cells... February 13, 2012.\\1\\ \\1\\ See Crystalline Silicon Photovoltaic Cells, Whether or Not Assembled Into Modules...

Collected charge of planar silicon detectors after pion and proton irradiations up to 2.2 ×10 16 n eq cm -2

NASA Astrophysics Data System (ADS)

Affolder, Anthony; Allport, Phil; Casse, Gianluigi

2010-11-01

The planned luminosity upgrade of the Large Hadron Collider at CERN (Super-LHC) will provide a challenging environment for the tracking and vertexing detector systems. Planar, segmented silicon detectors are one of the few radiation tolerant technologies under consideration for use for the Super-LHC tracking detectors in either pixel or strip geometries. In this paper, charge collection measurements are made with planar silicon sensors with 2 different substrate materials (float zone and magnetic Czochralski) and 3 different diode configurations (p+ strip in n-bulk, n+ strip in n-bulk, and n+ strip in p-bulk). For the first time, a comparison of the charge collection of these devices will be made after irradiation up to 6 ×1014 neq cm-2 with 280 MeV charged pions, and up to 2.2 ×1016 neq cm-2 with 26 MeV protons. This study covers the expected range of final fluences for the different layers of pixel and microstrip sensors of the ATLAS and CMS experiments at the Super-LHC. These measurements have been carried out using analogue, high-speed (40 MHz) electronics and a Strontium-90 beta source.

Entwicklungsarbeit am Spurendetektor fur das CDF Experiment am Tevatron (in German/English)

DOE Office of Scientific and Technical Information (OSTI.GOV)

Hartmann, Frank

2000-02-01

Silicon, the element, which revolutionized the development of electronics, is known as an important and multiusable material, dominating todays electronic technology. It's properties are well investigated and today well known. Silicon is used in solar cells, computers and telecommunications. Since the Sixties semiconductors have been used as particle detectors. Initially they were operated in fixed- target experiments as calorimeters and as detectors with a high precision track reconstruction. Since the Eighties they are widely used in collider experiments as silicon microstrip or silicon pixel detectors near the primary vertex. Silicon sensors have a very good intrinsic energy resolution: for everymore » 3.6 eV released by a particle crossing the medium, one electron-hole pair is produced. Compared to 30 eV required to ionize a gas molecule in a gaseous detector, one gets 10 times the number of particles. The average energy loss and high ionized particle number with 390 e V / μm ~ 108 (electron - hole pairs)/ μm is effectively high due to the high density of silicon. These detectors allow a high precision reconstruction of tracks, primary and secondary vertices, which are especially important for b flavour tagging. The Tevatron and its detectors are being upgraded for the next data taking run starting in 2001 (RUN II). The Collider Detector at Fermilab (CDF) [2] for the upcoming Run II and its upgraded components are described in chapter 2. The main upgrade project is the design and construction of a completely new inner tracking system.« less

Surface plasmons based terahertz modulator consisting of silicon-air-metal-dielectric-metal layers

NASA Astrophysics Data System (ADS)

Wang, Wei; Yang, Dongxiao; Qian, Zhenhai

2018-05-01

An optically controlled modulator of the terahertz wave, which is composed of a metal-dielectric-metal structure etched with circular loop arrays on both the metal layers and a photoexcited silicon wafer separated by an air layer, is proposed. Simulation results based on experimentally measured complex permittivities predict that modification of complex permittivity of the silicon wafer through excitation laser leads to a significant tuning of transmission characteristics of the modulator, forming the modulation depths of 59.62% and 96.64% based on localized surface plasmon peak and propagating surface plasmon peak, respectively. The influences of the complex permittivity of the silicon wafer and the thicknesses of both the air layer and the silicon wafer are numerically studied for better understanding the modulation mechanism. This study proposes a feasible methodology to design an optically controlled terahertz modulator with large modulation depth, high speed and suitable insertion loss, which is useful for terahertz applications in the future.

Sub-terahertz and terahertz microstrip resonant-tunneling-diode oscillators

DOE Office of Scientific and Technical Information (OSTI.GOV)

Feiginov, Michael, E-mail: feiginov.michael@canon.co.jp

We present a theoretical analysis of traveling-wave microstrip resonant-tunneling-diode (RTD) oscillators. Such oscillators are similar to terahertz (THz) quantum-cascade lasers (QCLs) with a metal-metal waveguide and with just the active part of a single QCL period (an RTD) as their active core. Assuming realistic parameters of RTDs, we show that the microstrip RTD oscillators should be working at sub-THz and THz frequencies. Contrary to the contemporary THz QCLs, RTD microstrips are room-temperature oscillators. The major loss- and gain-enhancement mechanisms in RTD microstrips are identified.

Seventh workshop on the role of impurities and defects in silicon device processing

DOE Office of Scientific and Technical Information (OSTI.GOV)

NONE

1997-08-01

This workshop is the latest in a series which has looked at technological issues related to the commercial development and success of silicon based photovoltaic (PV) modules. PV modules based on silicon are the most common at present, but face pressure from other technologies in terms of cell performance and cell cost. This workshop addresses a problem which is a factor in the production costs of silicon based PV modules.

77 FR 10478 - Crystalline Silicon Photovoltaic Cells, Whether or Not Assembled Into Modules, From the People's...

Federal Register 2010, 2011, 2012, 2013, 2014

2012-02-22

... Photovoltaic Cells, Whether or Not Assembled Into Modules, From the People's Republic of China: Postponement of... determination in the countervailing duty investigation of crystalline silicon photovoltaic cells, whether or not... Crystalline Silicon Photovoltaic Cells, Whether or Not Assembled Into Modules, From the People's Republic of...

Design and Analysis of a Micromachined LC Low Pass Filter For 2.4GHz Application

NASA Astrophysics Data System (ADS)

Saroj, Samruddhi R.; Rathee, Vishal R.; Pande, Rajesh S.

2018-02-01

This paper reports design and analysis of a passive low pass filter with cut-off frequency of 2.4 GHz using MEMS (Micro Electro-Mechanical Systems) technology. The passive components such as suspended spiral inductors and metal-insulator-metal (MIM) capacitor are arranged in T network form to implement LC low pass filter design. This design employs a simple approach of suspension thereby reducing parasitic losses to eliminate the performance degrading effects caused by integrating an off-chip inductor in the filter circuit proposed to be developed on a low cost silicon substrate using RF-MEMS components. The filter occupies only 2.1 mm x 0.66 mm die area and is designed using micro-strip transmission line placed on a silicon substrate. The design is implemented in High Frequency Structural Simulator (HFSS) software and fabrication flow is proposed for its implementation. The simulated results show that the design has an insertion loss of -4.98 dB and return loss of -2.60dB.

Development of a Self Powered Vehicle Detector

DTIC Science & Technology

1978-10-01

Low Power RFTelemetry Link, Audio Tone kncoder/Decoder, 9mn’dlrectional Microstrip Antenna, RF Oscillator , RF Transmitter, Battery/ Solar Cell Tests...tuned Colpitts oscillator using a fundamental mode crystal, a reactance modulator (varactor diode), and a collector tank circuit tuned to the second...papers discussing this type of VCXO. The basic Colpitts oscillator equivalent circuit is shown in Figure 29 having a collector tank tuned to the 2nd

Highly linear ring modulator from hybrid silicon and lithium niobate.

PubMed

Chen, Li; Chen, Jiahong; Nagy, Jonathan; Reano, Ronald M

2015-05-18

We present a highly linear ring modulator from the bonding of ion-sliced x-cut lithium niobate onto a silicon ring resonator. The third order intermodulation distortion spurious free dynamic range is measured to be 98.1 dB Hz(2/3) and 87.6 dB Hz(2/3) at 1 GHz and 10 GHz, respectively. The linearity is comparable to a reference lithium niobate Mach-Zehnder interferometer modulator operating at quadrature and over an order of magnitude greater than silicon ring modulators based on plasma dispersion effect. Compact modulators for analog optical links that exploit the second order susceptibility of lithium niobate on the silicon platform are envisioned.

Monolithically interconnected silicon-film™ module technology

NASA Astrophysics Data System (ADS)

DelleDonne, E. J.; Ford, D. H.; Hall, R. B.; Ingram, A. E.; Rand, J. A.; Barnett, A. M.

1999-03-01

AstroPower is developing an advanced thin-silicon-based, photovoltaic module product. A low-cost monolithic interconnected device is being integrated into a module that combines the design and process features of advanced light trapped, thin-silicon solar cells. This advanced product incorporates a low-cost substrate, a nominally 50-μm thick grown silicon layer with minority carrier diffusion lengths exceeding the active layer thickness, light trapping due to back-surface reflection, and back-surface passivation. The thin silicon layer enables high solar cell performance and can lead to a module conversion efficiency as high as 19%. These performance design features, combined with low-cost manufacturing using relatively low-cost capital equipment, continuous processing and a low-cost substrate, will lead to high-performance, low-cost photovoltaic panels.

Wideband Microstrip Antenna-Feeding Array

NASA Technical Reports Server (NTRS)

Huang, John

1990-01-01

Special impedance-matching probes help reduce feed complexity. Lightweight array of microstrip antenna elements designed to transmit and illuminate reflector antenna with circularly polarized radiation at 1,545 to 1,550 MHz and to receive circularly polarized radiation at 1,646 to 1,660 MHz. Microstrip array is cluster of 7 subarrays containing total of 28 microstrip patches. Produces cicularly polarized beam with suitable edge taper to illuminate reflector antenna. Teardrop-shaped feed probe provides gradual change of field from coaxial transmission line into microstrip substrate. Intended to be part of larger overlapping-cluster array generating multiple contiguous beams.

Microstrip Patch Antenna And Method

NASA Technical Reports Server (NTRS)

Fink, Patrick W. (Inventor)

2001-01-01

Method and apparatus are provided for a microstrip feeder structure for supplying properly phased signals to each radiator element in a microstrip antenna array that may be utilized for radiating circularly polarized electromagnetic waves. In one disclosed embodiment. the microstrip feeder structure includes a plurality of microstrip sections many or all of which preferably have an electrical length substantially equal to one-quarter wavelength at the antenna operating frequency. The feeder structure provides a low loss feed structure that may be duplicated multiple times through a set of rotations and translations to provide a radiating array of the desired size.

Improved Gain Microstrip Patch Antenna

DTIC Science & Technology

2015-08-06

08-2015 Publication Improved Gain Microstrip Patch Antenna David A. Tonn Naval Under Warfare Center Division, Newport 1176 Howell St., Code 00L...GAIN MICROSTRIP PATCH ANTENNA STATEMENT OF GOVERNMENT INTEREST [0001] The invention described herein may be manufactured and used by or for the...patch antenna having increased gain, and an apparatus for increasing the gain and bandwidth of an existing microstrip patch antenna . (2) Description

Flip-chip integrated silicon Mach-Zehnder modulator with a 28nm fully depleted silicon-on-insulator CMOS driver.

PubMed

Yong, Zheng; Shopov, Stefan; Mikkelsen, Jared C; Mallard, Robert; Mak, Jason C C; Voinigescu, Sorin P; Poon, Joyce K S

2017-03-20

We present a silicon electro-optic transmitter consisting of a 28nm ultra-thin body and buried oxide fully depleted silicon-on-insulator (UTBB FD-SOI) CMOS driver flip-chip integrated onto a Mach-Zehnder modulator. The Mach-Zehnder silicon optical modulator was optimized to have a 3dB bandwidth of around 25 GHz at -1V bias and a 50 Ω impedance. The UTBB FD-SOI CMOS driver provided a large output voltage swing around 5 V_pp to enable a high dynamic extinction ratio and a low device insertion loss. At 44 Gbps, the transmitter achieved a high extinction ratio of 6.4 dB at the modulator quadrature operation point. This result shows open eye diagrams at the highest bit rates and with the largest extinction ratios for silicon electro-optic transmitter using a CMOS driver.

Modulation Doping of Silicon using Aluminium-induced Acceptor States in Silicon Dioxide

PubMed Central

König, Dirk; Hiller, Daniel; Gutsch, Sebastian; Zacharias, Margit; Smith, Sean

2017-01-01

All electronic, optoelectronic or photovoltaic applications of silicon depend on controlling majority charge carriers via doping with impurity atoms. Nanoscale silicon is omnipresent in fundamental research (quantum dots, nanowires) but also approached in future technology nodes of the microelectronics industry. In general, silicon nanovolumes, irrespective of their intended purpose, suffer from effects that impede conventional doping due to fundamental physical principles such as out-diffusion, statistics of small numbers, quantum- or dielectric confinement. In analogy to the concept of modulation doping, originally invented for III-V semiconductors, we demonstrate a heterostructure modulation doping method for silicon. Our approach utilizes a specific acceptor state of aluminium atoms in silicon dioxide to generate holes as majority carriers in adjacent silicon. By relocating the dopants from silicon to silicon dioxide, Si nanoscale doping problems are circumvented. In addition, the concept of aluminium-induced acceptor states for passivating hole selective tunnelling contacts as required for high-efficiency photovoltaics is presented and corroborated by first carrier lifetime and tunnelling current measurements. PMID:28425460

Silicon photonic Mach Zehnder modulators for next-generation short-reach optical communication networks

NASA Astrophysics Data System (ADS)

Lacava, C.; Liu, Z.; Thomson, D.; Ke, Li; Fedeli, J. M.; Richardson, D. J.; Reed, G. T.; Petropoulos, P.

2016-02-01

Communication traffic grows relentlessly in today's networks, and with ever more machines connected to the network, this trend is set to continue for the foreseeable future. It is widely accepted that increasingly faster communications are required at the point of the end users, and consequently optical transmission plays a progressively greater role even in short- and medium-reach networks. Silicon photonic technologies are becoming increasingly attractive for such networks, due to their potential for low cost, energetically efficient, high-speed optical components. A representative example is the silicon-based optical modulator, which has been actively studied. Researchers have demonstrated silicon modulators in different types of structures, such as ring resonators or slow light based devices. These approaches have shown remarkably good performance in terms of modulation efficiency, however their operation could be severely affected by temperature drifts or fabrication errors. Mach-Zehnder modulators (MZM), on the other hand, show good performance and resilience to different environmental conditions. In this paper we present a CMOS-compatible compact silicon MZM. We study the application of the modulator to short-reach interconnects by realizing data modulation using some relevant advanced modulation formats, such as 4-level Pulse Amplitude Modulation (PAM-4) and Discrete Multi-Tone (DMT) modulation and compare the performance of the different systems in transmission.

Graphene optical modulator

NASA Astrophysics Data System (ADS)

Liu, Ming; Yin, Xiaobo; Wang, Feng; Zhang, Xiang

2011-10-01

Data communications have been growing at a speed even faster than Moore's Law, with a 44-fold increase expected within the next 10 years. Data Transfer on such scale would have to recruit optical communication technology and inspire new designs of light sources, modulators, and photodetectors. An ideal optical modulator will require high modulation speed, small device footprint and large operating bandwidth. Silicon modulators based on free carrier plasma dispersion effect and compound semiconductors utilizing direct bandgap transition have seen rapid improvement over the past decade. One of the key limitations for using silicon as modulator material is its weak refractive index change, which limits the footprint of silicon Mach-Zehnder interferometer modulators to millimeters. Other approaches such as silicon microring modulators reduce the operation wavelength range to around 100 pm and are highly sensitive to typical fabrication tolerances and temperature fluctuations. Growing large, high quality wafers of compound semiconductors, and integrating them on silicon or other substrates is expensive, which also restricts their commercialization. In this work, we demonstrate that graphene can be used as the active media for electroabsorption modulators. By tuning the Fermi energy level of the graphene layer, we induced changes in the absorption coefficient of graphene at communication wavelength and achieve a modulation depth above 3 dB. This integrated device also has the potential of working at high speed.

Development of semiconductor tracking: The future linear collider case

NASA Astrophysics Data System (ADS)

Savoy-Navarro, Aurore

2011-04-01

An active R&D on silicon tracking for the linear collider, SiLC, is pursued since several years to develop the new generation of large area silicon trackers for the future linear collider(s). The R&D objectives on new sensors, new front end processing of the signal, and the related mechanical and integration challenges for building such large detectors within the proposed detector concepts are described. Synergies and differences with the LHC construction and upgrades are explained. The differences between the linear collider projects, namely the international linear collider, ILC, and the compact linear collider, CLIC, are discussed as well. Two final objectives are presented for the construction of this important sub-detector for the future linear collider experiments: a relatively short term design based on micro-strips combined or not with a gaseous central tracker and a longer term design based on an all-pixel tracker.The R&D objectives on sensors include single sided micro-strips as baseline for the shorter term with the strips from large wafers (at least 6 in), 200 μm thick, 50 μm pitch and the edgeless and alignment friendly options. This work is conducted by SiLC in collaboration with three technical research centers in Italy, Finland, and Spain and HPK. SiLC is studied as well, using advanced Si sensor technologies for higher granularity trackers especially short strips and pixels all based on 3D technology. New Deep Sub-Micron CMOS mix mode (analog and digital) FE and readout electronics are developed to fully process the detector signals currently adapted to the ILC cycle. It is a high-level processing and a fully programmable ASIC; highly fault tolerant. In its latest version, handling 128 channels will equip these next coming years larger size silicon tracking prototypes at test beams. Connection of the FEE chip on the silicon detector especially in the strip case is a major issue. Very preliminary results with inline pitch adapter based on wiring were just achieved. Bump-bonding or 3D vertical interconnect is the other SiLC R&D objective. The goal is to simplify the overall architecture and decrease the material budget of these devices. Three tracking concepts are briefly discussed, two of which are part of the ILC Letter of Intent of the ILD and SiD detector concepts. These last years, SiLC successfully performed beam tests to experience and test these R&D lines.

Suspended Patch Antenna Array With Electromagnetically Coupled Inverted Microstrip Feed

NASA Technical Reports Server (NTRS)

Simons, Rainee N.

2000-01-01

The paper demonstrates a four-element suspended patch antenna array, with a parasitic patch layer and an electromagnetically coupled inverted microstrip feed, for linear polarization at K-Band frequencies. This antenna has the following advantages over conventional microstrip antennas: First, the inverted microstrip has lower attenuation than conventional microstrip; hence, conductor loss associated with the antenna corporate feed is lower resulting in higher gain and efficiency. Second, conventional proximity coupled patch antennas require a substrate for the feed and a superstrate for the patch. However, the inverted microstrip fed patch antenna makes use of a single substrate, and hence, is lightweight and low cost. Third, electromagnetic coupling results in wider bandwidth. Details regarding the design and fabrication will be presented as well as measured results including return loss, radiation patterns and cross-polarization levels.

Micrometer size polarization independent depletion-type photonic modulator in Silicon On Insulator

NASA Astrophysics Data System (ADS)

Gardes, F. Y.; Tsakmakidis, K. L.; Thomson, D.; Reed, G. T.; Mashanovich, G. Z.; Hess, O.; Avitabile, D.

2007-04-01

The trend in silicon photonics, in the last few years has been to reduce waveguide size to obtain maximum gain in the real estate of devices as well as to increase the performance of active devices. Using different methods for the modulation, optical modulators in silicon have seen their bandwidth increased to reach multi GHz frequencies. In order to simplify fabrication, one requirement for a waveguide, as well as for a modulator, is to retain polarisation independence in any state of operation and to be as small as possible. In this paper we provide a way to obtain polarization independence and improve the efficiency of an optical modulator using a V-shaped pn junction base on the natural etch angle of silicon, 54.7 deg. This modulator is compared to a flat junction depletion type modulator of the same size and doping concentration.

Test Of A Microwave Amplifier With Superconductive Filter

NASA Technical Reports Server (NTRS)

Bhasin, K. B.; Toncich, S. S.; Chorey, C. M.; Bonetti, R. R.; Williams, A. E.

1995-01-01

Report describes design and low-temperature tests of low-noise GaAs microwave amplifier combined with microstrip band-pass filter. Two versions of microstrip filter used in alternate tests; in one version, microstrips formed as films of high-transition-temperature superconductor Y/Ba/Cu/O on lanthanum aluminate substrate with gold film as ground plane. Other version identical except microstrips as well as ground plane made of gold, normally conductive.

Optical modulator based on silicon nanowires racetrack resonator

NASA Astrophysics Data System (ADS)

Sherif, S. M.; Shahada, L.; Swillam, M.

2018-02-01

An optical modulator based on the racetrack resonator configuration is introduced. The structure of the resonator modulator is built from silicon nanowires on silica. The cladding and voids between the silicon nanowires are filled with an electro-optic polymer. The proposed modulator is fully CMOS compatible. When the resonance is tuned to the 1.55μm wavelength, it experiences a wavelength shift upon voltage application, which is measured at the output as a change in the power level.

Bolometers for millimeter-wave Cosmology

NASA Astrophysics Data System (ADS)

Bock, James J.

2002-05-01

Bolometers offer high sensitivity for observations of the cosmic microwave background, Sunyaev-Zel'Dovich effect in clusters, and far-infrared galaxies. Near background-limited performance may be realized even under the low background conditions available from a space-borne platform. We discuss the achieved performance of silicon nitride micromesh (`spider web') bolometers readout by NTD Ge thermistors. We are developing arrays of such bolometers coupled to single-mode feedhorns. CMB polarization may be studies using a new absorber geometry allowing simultaneous detection of both linear polarizations in a single feedhorn with two individual detectors. Finally we discuss a new bolometer architecture consisting of an array of slot antennae coupled to filters and bolometers via superconducting microstrip. .

Circularly-Polarized Microstrip Antenna

NASA Technical Reports Server (NTRS)

Stanton, P. H.

1985-01-01

Microstrip construction compact for mobile applications. Circularly polarized microstrip antenna made of concentric cylindrical layers of conductive and dielectric materials. Coaxial cable feedlines connected to horizontal and vertical subelements from inside. Vertical subelement acts as ground for horizontal subelement.

Tuning the ferromagnetic resonance frequency of soft magnetic film by patterned permalloy micro-stripes with stripe-domain

NASA Astrophysics Data System (ADS)

Pan, Lining; Xie, Hongkang; Cheng, Xiaohong; Zhao, Chenbo; Feng, Hongmei; Cao, Derang; Wang, Jianbo; Liu, Qingfang

2018-07-01

Periodic micro-stripes arrays with stripe domains structures upon continuous permalloy (Py) film were fabricated by sputtering, photolithography and ion beam etching technology. These samples display in-plane magnetic anisotropy, and stripe domains structure is observed by the magnetic force microscopy (MFM) in the area of the micro-stripes. The periodic micro-stripes show an effective impact on static and dynamic magnetic properties of Py continuous film. In the case of dynamic magnetic properties, the resonance frequency fr of these samples can be tuned by periodic micro-stripes arrays. Compared to continuous film with resonance frequency fr of 0.64 GHz, the fr of composite structures can be tuned by the separation gap of periodic micro-stripes arrays from 0.8 GHz to 2.3 GHz at zero-field. At the same time, the fr could be also tuned by rotating the samples within the plane. This attributes to the competition of shape anisotropy induced by micro-stripes and the dynamic anisotropy originating by stripe domains structure.

Modeling the effects of biological tissue on RF propagation from a wrist-worn device.

PubMed

Wilson, Jared D; Blanco, Justin A; Mazar, Scott; Bly, Mark

2014-01-01

Many wireless devices in common use today are worn either on or in close proximity to the body. Among them are a growing number of wrist-mounted devices designed for applications such as activity or vital-signs monitoring, typically using Bluetooth technology to communicate with external devices. Here, we use a tissue-mimicking phantom material in conjunction with anechoic chamber and network analyzer testing to investigate how antenna propagation patterns in one such device are influenced by the electrical properties of the human wrist. A microstrip antenna module is mounted onto phantom material of various geometries, and the resulting voltage standing wave ratio (VSWR), input impedance, and azimuth radiation pattern are recorded in both free space and real-world environments. The results of this study demonstrate how the high permittivity values of human tissue (ε(r) ≈ 16) affect the design parameters of microstrip antennas. A simulation environment using Sonnet EM software was used to further analyze the high dielectric effects of biological tissue on RF propagation.

Dispersive Readout of a Superconducting Flux Qubit Using a Microstrip SQUID Amplifier

NASA Astrophysics Data System (ADS)

Johnson, J. E.; Hoskinson, E. M.; Macklin, C.; Siddiqi, I.; Clarke, John

2011-03-01

Dispersive techniques for the readout of superconducting qubits offer the possibility of high repetition-rate, quantum non-demolition measurement by avoiding dissipation close to the qubit. To achieve dispersive readout, we couple our three-junction aluminum flux qubit inductively to a 1-2 GHz non-linear oscillator formed by a capacitively shunted DC SQUID. The frequency of this resonator is modulated by the state of the qubit via the flux-dependent inductance of the SQUID. Readout is performed by probing the resonator in the linear (weak drive) regime with a microwave tone and monitoring the phase of the reflected signal. A microstrip SQUID amplifier (MSA) is used to increase the sensitivity of the measurement over that of a HEMT (high electron mobility transistor) amplifier. We report measurements of the performance of our amplification chain. Increased fidelity and reduced measurement backaction resulting from the implementation of the MSA will also be discussed. This work was funded in part by the U.S. Government and by BBN Technologies.

Improved Dual-Polarized Microstrip Antenna

NASA Technical Reports Server (NTRS)

Huang, John

1993-01-01

Dual-polarized microstrip antenna features microstrip transmission-line feeds arranged in such configuration that cross-polarized components of radiation relatively low and degree of isolation between feed ports relatively high. V and H feed ports offset from midpoints of feed lines to obtain required opposite phases at feed-point connections to microstrip patches. Two independent beams of same frequency with electric fields polarized orthogonally to each other transmitted or received via antenna. Improved design saves space.

Micro-strip sensors based on CVD diamond

NASA Astrophysics Data System (ADS)

Adam, W.; Berdermann, E.; Bergonzo, P.; Bertuccio, G.; Bogani, F.; Borchi, E.; Brambilla, A.; Bruzzi, M.; Colledani, C.; Conway, J.; D'Angelo, P.; Dabrowski, W.; Delpierre, P.; Deneuville, A.; Dulinski, W.; van Eijk, B.; Fallou, A.; Fizzotti, F.; Foulon, F.; Friedl, M.; Gan, K. K.; Gheeraert, E.; Hallewell, G.; Han, S.; Hartjes, F.; Hrubec, J.; Husson, D.; Kagan, H.; Kania, D.; Kaplon, J.; Kass, R.; Koeth, T.; Krammer, M.; Logiudice, A.; Lu, R.; mac Lynne, L.; Manfredotti, C.; Meier, D.; Mishina, M.; Moroni, L.; Oh, A.; Pan, L. S.; Pernicka, M.; Peitz, A.; Perera, L.; Pirollo, S.; Procario, M.; Riester, J. L.; Roe, S.; Rousseau, L.; Rudge, A.; Russ, J.; Sala, S.; Sampietro, M.; Schnetzer, S.; Sciortino, S.; Stelzer, H.; Stone, R.; Suter, B.; Tapper, R. J.; Tesarek, R.; Trischuk, W.; Tromson, D.; Vittone, E.; Walsh, A. M.; Wedenig, R.; Weilhammer, P.; Wetstein, M.; White, C.; Zeuner, W.; Zoeller, M.; RD42 Collaboration

2000-10-01

In this article we present the performance of recent chemical vapour deposition (CVD) diamond micro-strip sensors in beam tests. In addition, we present the first comparison of a CVD diamond micro-strip sensor before and after proton irradiation.

Texturing Silicon Nanowires for Highly Localized Optical Modulation of Cellular Dynamics.

PubMed

Fang, Yin; Jiang, Yuanwen; Acaron Ledesma, Hector; Yi, Jaeseok; Gao, Xiang; Weiss, Dara E; Shi, Fengyuan; Tian, Bozhi

2018-06-18

Engineered silicon-based materials can display photoelectric and photothermal responses under light illumination, which may lead to further innovations at the silicon-biology interfaces. Silicon nanowires have small radial dimensions, promising as highly localized cellular modulators, however the single crystalline form typically has limited photothermal efficacy due to the poor light absorption and fast heat dissipation. In this work, we report strategies to improve the photothermal response from silicon nanowires by introducing nanoscale textures on the surface and in the bulk. We next demonstrate high-resolution extracellular modulation of calcium dynamics in a number of mammalian cells including glial cells, neurons, and cancer cells. The new materials may be broadly used in probing and modulating electrical and chemical signals at the subcellular length scale, which is currently a challenge in the field of electrophysiology or cellular engineering.

NASA Tech Briefs, October 2011

NASA Technical Reports Server (NTRS)

2011-01-01

Topics covered include: Laser Truss Sensor for Segmented Telescope Phasing; Qualifications of Bonding Process of Temperature Sensors to Deep-Space Missions; Optical Sensors for Monitoring Gamma and Neutron Radiation; Compliant Tactile Sensors; Cytometer on a Chip; Measuring Input Thresholds on an Existing Board; Scanning and Defocusing Properties of Microstrip Reflectarray Antennas; Cable Tester Box; Programmable Oscillator; Fault-Tolerant, Radiation-Hard DSP; Sub-Shot Noise Power Source for Microelectronics; Asynchronous Message Service Reference Implementation; Zero-Copy Objects System; Delay and Disruption Tolerant Networking MACHETE Model; Contact Graph Routing; Parallel Eclipse Project Checkout; Technique for Configuring an Actively Cooled Thermal Shield in a Flight System; Use of Additives to Improve Performance of Methyl Butyrate-Based Lithium-Ion Electrolytes; Li-Ion Cells Employing Electrolytes with Methyl Propionate and Ethyl Butyrate Co-Solvents; Improved Devices for Collecting Sweat for Chemical Analysis; Tissue Photolithography; Method for Impeding Degradation of Porous Silicon Structures; External Cooling Coupled to Reduced Extremity Pressure Device; A Zero-Gravity Cup for Drinking Beverages in Microgravity; Co-Flow Hollow Cathode Technology; Programmable Aperture with MEMS Microshutter Arrays; Polished Panel Optical Receiver for Simultaneous RF/Optical Telemetry with Large DSN Antennas; Adaptive System Modeling for Spacecraft Simulation; Lidar-Based Navigation Algorithm for Safe Lunar Landing; Tracking Object Existence From an Autonomous Patrol Vehicle; Rad-Hard, Miniaturized, Scalable, High-Voltage Switching Module for Power Applications; and Architecture for a 1-GHz Digital RADAR.

Microstrip Yagi Antenna with Dual Aperture-Coupled Feed

NASA Technical Reports Server (NTRS)

Pogorzelski, Ronald; Venkatesan, Jaikrishna

2008-01-01

A proposed microstrip Yagi antenna would operate at a frequency of 8.4 GHz (which is in the X band) and would feature a mechanically simpler, more elegant design, relative to a prior L-band microstrip Yagi antenna. In general, the purpose of designing a microstrip Yagi antenna is to combine features of a Yagi antenna with those of a microstrip patch to obtain an antenna that can be manufactured at low cost, has a low profile, and radiates a directive beam that, as plotted on an elevation plane perpendicular to the antenna plane, appears tilted away from the broadside. Such antennas are suitable for flush mounting on surfaces of diverse objects, including spacecraft, aircraft, land vehicles, and computers. Stated somewhat more precisely, what has been proposed is a microstrip antenna comprising an array of three Yagi elements. Each element would include four microstrip-patch Yagi subelements: one reflector patch, one driven patch, and two director patches. To obtain circular polarization, each driven patch would be fed by use of a dual offset aperture-coupled feed featuring bow-tie-shaped apertures. The selection of the dual offset bow-tie aperture geometry is supported by results found in published literature that show that this geometry would enable matching of the impedances of the driven patches to the 50-Omega impedance of the microstrip feedline while maintaining a desirably large front-to-back lobe ratio.

Specific energy yield comparison between crystalline silicon and amorphous silicon based PV modules

NASA Astrophysics Data System (ADS)

Ferenczi, Toby; Stern, Omar; Hartung, Marianne; Mueggenburg, Eike; Lynass, Mark; Bernal, Eva; Mayer, Oliver; Zettl, Marcus

2009-08-01

As emerging thin-film PV technologies continue to penetrate the market and the number of utility scale installations substantially increase, detailed understanding of the performance of the various PV technologies becomes more important. An accurate database for each technology is essential for precise project planning, energy yield prediction and project financing. However recent publications showed that it is very difficult to get accurate and reliable performance data of theses technologies. This paper evaluates previously reported claims the amorphous silicon based PV modules have a higher annual energy yield compared to crystalline silicon modules relative to their rated performance. In order to acquire a detailed understanding of this effect, outdoor module tests were performed at GE Global Research Center in Munich. In this study we examine closely two of the five reported factors that contribute to enhanced energy yield of amorphous silicon modules. We find evidence to support each of these factors and evaluate their relative significance. We discuss aspects for improvement in how PV modules are sold and identify areas for further study further study.

Development of a silicon microstrip detector with single photon sensitivity for fast dynamic diffraction experiments at a synchrotron radiation beam

NASA Astrophysics Data System (ADS)

Arakcheev, A.; Aulchenko, V.; Kudashkin, D.; Shekhtman, L.; Tolochko, B.; Zhulanov, V.

2017-06-01

Time-resolved experiments on the diffraction of synchrotron radiation (SR) from crystalline materials provide information on the evolution of a material structure after a heat, electron beam or plasma interaction with a sample under study. Changes in the material structure happen within a microsecond scale and a detector with corresponding parameters is needed. The SR channel 8 of the VEPP-4M storage ring provides radiation from the 7-pole wiggler that allows to reach several tens photons within one μs from a tungsten crystal for the most intensive diffraction peak. In order to perform experiments that allow to measure the evolution of tungsten crystalline structure under the impact of powerful laser beam, a new detector is developed, that can provide information about the distribution of a scattered SR flux in space and its evolution in time at a microsecond scale. The detector is based on the silicon p-in-n microstrip sensor with DC-coupled metal strips. The sensor contains 1024 30 mm long strips with a 50 μm pitch. 64 strips are bonded to the front-end electronics based on APC128 ASICs. The APC128 ASIC contains 128 channels that consist of a low noise integrator with 32 analogue memory cells each. The integrator equivalent noise charge is about 2000 electrons and thus the signal from individual photons with energy above 40 keV can be observed. The signal can be stored at the analogue memory with 10 MHz rate. The first measurements with the beam scattered from a tungsten crystal with energy near 60 keV demonstrated the capability of this prototype to observe the spatial distribution of the photon flux with the intensity from below one photon per channel up to 0~10 photons per channel with a frame rate from 10 kHz up to 1 MHz.

Resonator-Based Silicon Electro-Optic Modulator with Low Power Consumption

NASA Astrophysics Data System (ADS)

Xin, Maoqing; Danner, Aaron J.; Eng Png, Ching; Thor Lim, Soon

2009-04-01

This paper demonstrates, via simulation, an electro-optic modulator based on a subwavelength Fabry-Perot resonator cavity with low power consumption of 86 µW/µm. This is, to the best of our knowledge, the lowest power reported for silicon photonic bandgap modulators. The device is modulated at a doped p-i-n junction overlapping the cavity in a silicon waveguide perforated with etched holes, with the doping area optimized for minimum power consumption. The surface area of the entire device is only 2.1 µm2, which compares favorably to other silicon-based modulators. A modulation speed of at least 300 MHz is detected from the electrical simulator after sidewall doping is introduced which is suitable for sensing or fiber to the home (FTTH) technologies, where speed can be traded for low cost and power consumption. The device does not rely on ultra-high Q, and could serve as a sensor, modulator, or passive filter with built-in calibration.

Theoretical Studies of Microstrip Antennas : Volume II, Analysis and Synthesis of Multi-Frequency Elements

DOT National Transportation Integrated Search

1979-09-01

Volume II of Theoretical Studies of Microstrip Antennas deals with the analysis and synthesis of several types of novel multi-resonant elements with emphasis on dual-frequency operation of rectangular microstrip patch antennas with or without externa...

Apparatus and Method for Improving the Gain and Bandwidth of a Microstrip Patch Antenna

DTIC Science & Technology

2013-09-30

improving both the gain and the bandwidth of a microstrip patch antenna . (2) Description of the Prior Art [0004] A patch antenna , also referred to as a...rectangular microstrip antenna , is a type of radio antenna with a low profile that can be mounted on a flat surface. The patch antenna includes a...patch antenna form a Attorney Docket No. 101925 2 of 11 resonant piece of microstrip transmission line. The patch is designed to have a length of

An experimental demonstration of a new type of proton computed tomography using a novel silicon tracking detector.

PubMed

Taylor, J T; Poludniowski, G; Price, T; Waltham, C; Allport, P P; Casse, G L; Esposito, M; Evans, P M; Green, S; Manger, S; Manolopoulos, S; Nieto-Camero, J; Parker, D J; Symons, J; Allinson, N M

2016-11-01

Radiography and tomography using proton beams promise benefit to image guidance and treatment planning for proton therapy. A novel proton tracking detector is described and experimental demonstrations at a therapy facility are reported. A new type of proton CT reconstructing relative "scattering power" rather than "stopping power" is also demonstrated. Notably, this new type of imaging does not require the measurement of the residual energies of the protons. A large area, silicon microstrip tracker with high spatial and temporal resolution has been developed by the Proton Radiotherapy Verification and Dosimetry Applications consortium and commissioned using beams of protons at iThemba LABS, Medical Radiation Department, South Africa. The tracker comprises twelve planes of silicon developed using technology from high energy physics with each plane having an active area of ∼10 × 10 cm segmented into 2048 microstrips. The tracker is organized into four separate units each containing three detectors at 60° to one another creating an x-u-v coordinate system. Pairs of tracking units are used to reconstruct vertices for protons entering and exiting a phantom containing tissue equivalent inserts. By measuring the position and direction of each proton before and after the phantom, the nonlinear path for each proton through an object can be reconstructed. Experimental results are reported for tracking the path of protons with initial energies of 125 and 191 MeV. A spherical phantom of 75 mm diameter was imaged by positioning it between the entrance and exit detectors of the tracker. Positions and directions of individual protons were used to create angular distributions and 2D fluence maps of the beam. These results were acquired for 36 equally spaced projections spanning 180°, allowing, for the first time, an experimental CT image based upon the relative scattering power of protons to be reconstructed. Successful tracking of protons through a thick target (phantom) has demonstrated that the tracker discussed in this paper can provide the precise directional information needed to perform proton radiography and tomography. When synchronized with a range telescope, this could enable the reconstruction of proton CT images of stopping power. Furthermore, by measuring the deflection of many protons through a phantom, it was demonstrated that it is possible to reconstruct a new kind of CT image (scattering power) based upon this tracking information alone.

50 Gb/s hybrid silicon traveling-wave electroabsorption modulator.

PubMed

Tang, Yongbo; Chen, Hui-Wen; Jain, Siddharth; Peters, Jonathan D; Westergren, Urban; Bowers, John E

2011-03-28

We have demonstrated a traveling-wave electroabsorption modulator based on the hybrid silicon platform. For a device with a 100 μm active segment, the small-signal electro/optical response renders a 3 dB bandwidth of around 42 GHz and its modulation efficiency reaches 23 GHz/V. A dynamic extinction ratio of 9.8 dB with a driving voltage swing of only 2 V was demonstrated at a transmission rate of 50 Gb/s. This represents a significant improvement for modulators compatible with integration of silicon-based photonic integrated circuits.

Advanced Microstrip Antenna Developments : Volume II. Microstrip GPS Antennas for General Aviation Aircraft

DOT National Transportation Integrated Search

1982-03-01

This report describes the application of microstrip antenna technology to the design of general aviation (G/A) aircraft antennas for use with the Global Positioning System (GPS). For most G/A aircraft, only single frequency operation will be required...

Advanced Microstrip Antenna Developments : Volume I. Technology Studies for Aircraft Phased Arrays

DOT National Transportation Integrated Search

1981-06-01

Work has continued on improvement of microstrip phased-array antenna technology since the first microstrip phased-array was flight-tested during the FAA 1974-1975 ATS-6 test program. The present development has extended this earlier work in three are...

Low-power silicon-organic hybrid (SOH) modulators for advanced modulation formats.

PubMed

Lauermann, M; Palmer, R; Koeber, S; Schindler, P C; Korn, D; Wahlbrink, T; Bolten, J; Waldow, M; Elder, D L; Dalton, L R; Leuthold, J; Freude, W; Koos, C

2014-12-01

We demonstrate silicon-organic hybrid (SOH) electro-optic modulators that enable quadrature phase-shift keying (QPSK) and 16-state quadrature amplitude modulation (16QAM) with high signal quality and record-low energy consumption. SOH integration combines highly efficient electro-optic organic materials with conventional silicon-on-insulator (SOI) slot waveguides, and allows to overcome the intrinsic limitations of silicon as an optical integration platform. We demonstrate QPSK and 16QAM signaling at symbol rates of 28 GBd with peak-to-peak drive voltages of 0.6 V(pp). For the 16QAM experiment at 112 Gbit/s, we measure a bit-error ratio of 5.1 × 10⁻⁵ and a record-low energy consumption of only 19 fJ/bit.

Behavior of the potential-induced degradation of photovoltaic modules fabricated using flat mono-crystalline silicon cells with different surface orientations

NASA Astrophysics Data System (ADS)

Yamaguchi, Seira; Masuda, Atsushi; Ohdaira, Keisuke

2016-04-01

This paper deals with the dependence of the potential-induced degradation (PID) of flat, p-type mono-crystalline silicon solar cell modules on the surface orientation of solar cells. The investigated modules were fabricated from p-type mono-crystalline silicon cells with a (100) or (111) surface orientation using a module laminator. PID tests were performed by applying a voltage of -1000 V to shorted module interconnector ribbons with respect to an Al plate placed on the cover glass of the modules at 85 °C. A decrease in the parallel resistance of the (100)-oriented cell modules is more significant than that of the (111)-oriented cell modules. Hence, the performance of the (100)-oriented-cell modules drastically deteriorates, compared with that of the (111)-oriented-cell modules. This implies that (111)-oriented cells offer a higher PID resistance.

From cells to laminate: probing and modeling residual stress evolution in thin silicon photovoltaic modules using synchrotron X-ray micro-diffraction experiments and finite element simulations

DOE PAGES

Tippabhotla, Sasi Kumar; Radchenko, Ihor; Song, W. J. R.; ...

2017-04-12

Fracture of silicon crystalline solar cells has recently been observed in increasing percentages especially in solar photovoltaic (PV) modules involving thinner silicon solar cells (<200 μm). Many failures due to fracture have been reported from the field because of environmental loading (snow, wind, etc.) as well as mishandling of the solar PV modules (during installation, maintenance, etc.). However, a significantly higher number of failures have also been reported during module encapsulation (lamination) indicating high residual stress in the modules and thus more prone to cell cracking. Here in this paper we report through the use of synchrotron X-ray submicron diffractionmore » coupled with physics-based finite element modeling, the complete residual stress evolution in mono-crystalline silicon solar cells during PV module integration process. For the first time, we unravel the reason for the high stress and cracking of silicon cells near soldered inter-connects. Our experiments revealed a significant increase of residual stress in the silicon cell near the solder joint after lamination. Moreover, our finite element simulations show that this increase of stress during lamination is a result of highly localized bending of the cell near the soldered inter-connects. Further, the synchrotron X-ray submicron diffraction has proven to be a very effective way to quantitatively probe mechanical stress in encapsulated silicon solar cells. Thus, this technique has ultimately enabled these findings leading to the enlightening of the role of soldering and encapsulation processes on the cell residual stress. This model can be further used to suggest methodologies that could lead to lower stress in encapsulated silicon solar cells, which are the subjects of our continued investigations.« less

From cells to laminate: probing and modeling residual stress evolution in thin silicon photovoltaic modules using synchrotron X-ray micro-diffraction experiments and finite element simulations

DOE Office of Scientific and Technical Information (OSTI.GOV)

Tippabhotla, Sasi Kumar; Radchenko, Ihor; Song, W. J. R.

Fracture of silicon crystalline solar cells has recently been observed in increasing percentages especially in solar photovoltaic (PV) modules involving thinner silicon solar cells (<200 μm). Many failures due to fracture have been reported from the field because of environmental loading (snow, wind, etc.) as well as mishandling of the solar PV modules (during installation, maintenance, etc.). However, a significantly higher number of failures have also been reported during module encapsulation (lamination) indicating high residual stress in the modules and thus more prone to cell cracking. Here in this paper we report through the use of synchrotron X-ray submicron diffractionmore » coupled with physics-based finite element modeling, the complete residual stress evolution in mono-crystalline silicon solar cells during PV module integration process. For the first time, we unravel the reason for the high stress and cracking of silicon cells near soldered inter-connects. Our experiments revealed a significant increase of residual stress in the silicon cell near the solder joint after lamination. Moreover, our finite element simulations show that this increase of stress during lamination is a result of highly localized bending of the cell near the soldered inter-connects. Further, the synchrotron X-ray submicron diffraction has proven to be a very effective way to quantitatively probe mechanical stress in encapsulated silicon solar cells. Thus, this technique has ultimately enabled these findings leading to the enlightening of the role of soldering and encapsulation processes on the cell residual stress. This model can be further used to suggest methodologies that could lead to lower stress in encapsulated silicon solar cells, which are the subjects of our continued investigations.« less

Space domain analysis of micro-IDG structure

NASA Astrophysics Data System (ADS)

Izzat, Narian; Pennock, Steve R.; Rozzi, Tullio

1994-06-01

The Microstrip Loaded Inset Dielectric Waveguide has been proposed as a transmission medium alternative to microstrip, and as a useful antenna medium at X-band and millimetric frequencies. In the present analysis we consider the case where a multi-layer, multi-conductor microstrip circuit may be housed within Inset Dielectric Waveguide.

Analysis of a microstrip reflectarray antenna for microspacecraft applications

NASA Technical Reports Server (NTRS)

Huang, J.

1995-01-01

A microstrip reflectarray is a flat reflector antenna that can be mounted conformally onto a spacecraft's outside structure without consuming a significant amount of spacecraft volume and mass. For large apertures (2 m or larger), the antenna's reflecting surface, being flat, can be more easily and reliably deployed than a curved parabolic reflector. This article presents the study results on a microstrip reflect-array with circular polarization. Its efficiency and bandwidth characteristics are analyzed. Numerous advantages of this antenna system are discussed. Three new concepts using this microstrip reflectarray are also proposed.

Analysis of Microstrip Line Fed Patch Antenna for Wireless Communications

NASA Astrophysics Data System (ADS)

Singh, Ashish; Aneesh, Mohammad; Kamakshi; Ansari, J. A.

2017-11-01

In this paper, theoretical analysis of microstrip line fed rectangular patch antenna loaded with parasitic element and split-ring resonator is presented. The proposed antenna shows that the dualband operation depends on gap between parasitic element, split-ring resonator, length and width of microstrip line. It is found that antenna resonates at two distinct resonating modes i.e., 0.9 GHz and 1.8 GHz for lower and upper resonance frequencies respectively. The antenna shows dual frequency nature with frequency ratio 2.0. The characteristics of microstrip line fed rectangular patch antenna loaded with parasitic element and split-ring resonator antenna is compared with other prototype microstrip line fed antennas. Further, the theoretical results are compared with simulated and reported experimental results, they are in close agreement.

Fabrication of Silicon Backshort Assembly for Waveguide-Coupled Superconducting Detectors

NASA Technical Reports Server (NTRS)

Crowe, E.; Bennett, C. L.; Chuss, D. T.; Denis, K. L.; Eimer, J.; Lourie, N.; Marriage, T.; Moseley, S. H.; Rostem, K.; Stevenson, T. R.;

The Heavy Photon Search beamline and its performance

DOE Office of Scientific and Technical Information (OSTI.GOV)

Baltzell, N.; Egiyan, H.; Ehrhart, M.

The Heavy Photon Search (HPS) is an experiment to search for a hidden sector photon, aka a heavy photon or dark photon, in fixed target electroproduction at the Thomas Jefferson National Accelerator Facility (JLab). The HPS experiment searches for the emore » $^+$e$^-$ decay of the heavy photon with bump hunt and detached vertex strategies using a compact, large acceptance forward spectrometer, consisting of a silicon microstrip detector (SVT) for tracking and vertexing, and a PbWO$$_4$$ electromagnetic calorimeter for energy measurement and fast triggering. To achieve large acceptance and good vertexing resolution, the first layer of silicon detectors is placed just 10 cm downstream of the target with the sensor edges only 500 $$\\mu$$m above and below the beam. Placing the SVT in such close proximity to the beam puts stringent requirements on the beam profile and beam position stability. As part of an approved engineering run, HPS took data in 2015 and 2016 at 1.05 GeV and 2.3 GeV beam energies, respectively. This study describes the beam line and its performance during that data taking.« less

The Heavy Photon Search beamline and its performance

DOE Office of Scientific and Technical Information (OSTI.GOV)

Baltzell, N.; Egiyan, H.; Ehrhart, M.

The Heavy Photon Search (HPS) is an experiment to search for a hidden sector photon, aka a heavy photon or dark photon, in fixed target electroproduction at the Thomas Jefferson National Accelerator Facility (JLab). The HPS experiment searches for the e+e- decay of the heavy photon with bump hunt and detached vertex strategies using a compact, large acceptance forward spectrometer, consisting of a silicon microstrip detector (SVT) for tracking and vertexing, and a PbWO 4 electromagnetic calorimeter for energy measurement and fast triggering. To achieve large acceptance and good vertexing resolution, the first layer of silicon detectors is placed justmore » 10 cm downstream of the target with the sensor edges only 500 μm above and below the beam. Placing the SVT in such close proximity to the beam puts stringent requirements on the beam profile and beam position stability. As part of an approved engineering run, HPS took data in 2015 and 2016 at 1.05 GeV and 2.3 GeV beam energies, respectively. This paper describes the beam line and its performance during that data taking.« less

The Heavy Photon Search beamline and its performance

DOE PAGES

Baltzell, N.; Egiyan, H.; Ehrhart, M.; ...

2017-07-01

The Heavy Photon Search (HPS) is an experiment to search for a hidden sector photon, aka a heavy photon or dark photon, in fixed target electroproduction at the Thomas Jefferson National Accelerator Facility (JLab). The HPS experiment searches for the emore » $^+$e$^-$ decay of the heavy photon with bump hunt and detached vertex strategies using a compact, large acceptance forward spectrometer, consisting of a silicon microstrip detector (SVT) for tracking and vertexing, and a PbWO$$_4$$ electromagnetic calorimeter for energy measurement and fast triggering. To achieve large acceptance and good vertexing resolution, the first layer of silicon detectors is placed just 10 cm downstream of the target with the sensor edges only 500 $$\\mu$$m above and below the beam. Placing the SVT in such close proximity to the beam puts stringent requirements on the beam profile and beam position stability. As part of an approved engineering run, HPS took data in 2015 and 2016 at 1.05 GeV and 2.3 GeV beam energies, respectively. This study describes the beam line and its performance during that data taking.« less

JFET front-end circuits integrated in a detector-grade silicon substrate

NASA Astrophysics Data System (ADS)

Manghisoni, M.; Ratti, L.; Re, V.; Speziali, V.; Traversi, G.; Dalla Betta, G. F.; Boscardin, M.; Batignani, G.; Giorgi, M.; Bosisio, L.

2003-08-01

This paper presents the design and experimental results relevant to front-end circuits integrated on detector-grade high resistivity silicon. The fabrication technology is made available by the Istituto per la Ricerca Scientifica e Tecnologica (ITC-IRST), Trento, Italy and allows using a common substrate for different kinds of active devices, such as N-channel JFETs and MOSFETs, and for pixel, microstrip, and PIN detectors. This research activity is being carried out in the framework of a project aiming at the fabrication of a multichannel mixed analog-digital chip for the readout of solid-state detectors integrated in the same substrate. Possible applications are in the field of medical and industrial imaging and space and high energy physics experiments. An all-JFET charge sensitive amplifier, which can use either a resistive or a nonresistive feedback network, has been characterized. The two configurations have been compared to each other, paying particular attention to noise performances, in view of the design of the complete readout channel. Operation capability in harsh radiation environment has been evaluated through exposure to /spl gamma/-rays from a /sup 60/Co source.

Recycling WEEE: Extraction and concentration of silver from waste crystalline silicon photovoltaic modules.

PubMed

Dias, Pablo; Javimczik, Selene; Benevit, Mariana; Veit, Hugo; Bernardes, Andréa Moura

2016-11-01

Photovoltaic modules (or panels) are important power generators with limited lifespans. The modules contain known pollutants and valuable materials such as silicon, silver, copper, aluminum and glass. Thus, recycling such waste is of great importance. To date, there have been few published studies on recycling silver from silicon photovoltaic panels, even though silicon technology represents the majority of the photovoltaic market. In this study, the extraction of silver from waste modules is justified and evaluated. It is shown that the silver content in crystalline silicon photovoltaic modules reaches 600g/t. Moreover, two methods to concentrate silver from waste modules were studied, and the use of pyrolysis was evaluated. In the first method, the modules were milled, sieved and leached in 64% nitric acid solution with 99% sodium chloride; the silver concentration yield was 94%. In the second method, photovoltaic modules were milled, sieved, subjected to pyrolysis at 500°C and leached in 64% nitric acid solution with 99% sodium chloride; the silver concentration yield was 92%. The first method is preferred as it consumes less energy and presents a higher yield of silver. This study shows that the use of pyrolysis does not assist in the extraction of silver, as the yield was similar for both methods with and without pyrolysis. Copyright © 2016 Elsevier Ltd. All rights reserved.

77 FR 73017 - Crystalline Silicon Photovoltaic Cells, Whether or Not Assembled Into Modules, From the People's...

Federal Register 2010, 2011, 2012, 2013, 2014

2012-12-07

... Photovoltaic Cells, Whether or Not Assembled Into Modules, From the People's Republic of China: Countervailing... photovoltaic cells, whether or not assembled into modules (solar cells), from the People's Republic of China... material injury to a U.S. industry.\\1\\ \\1\\ See Crystalline Silicon Photovoltaic Cells and Modules from...

77 FR 14732 - Crystalline Silicon Photovoltaic Cells, Whether or Not Assembled Into Modules, From the People's...

Federal Register 2010, 2011, 2012, 2013, 2014

2012-03-13

... Photovoltaic Cells, Whether or Not Assembled Into Modules, From the People's Republic of China: Postponement of... of an antidumping duty investigation of crystalline silicon photovoltaic cells, whether or not... currently due no later than March 27, 2012. \\1\\ See Crystalline Silicon Photovoltaic Cells, Whether or Not...

77 FR 5487 - Countervailing Duty Investigation of Crystalline Silicon Photovoltaic Cells, Whether or Not...

Federal Register 2010, 2011, 2012, 2013, 2014

2012-02-03

... Investigation of Crystalline Silicon Photovoltaic Cells, Whether or Not Assembled Into Modules, From the People... crystalline silicon photovoltaic cells, whether or not assembled into modules (solar cells), from the People's... exist for imports of solar cells from the PRC for Suntech, Trina, and all other producers or exporters...

Solar power roof shingle

NASA Technical Reports Server (NTRS)

Forestieri, A. F.; Ratajczak, A. F.; Sidorak, L. G.

1975-01-01

Silicon solar cell module provides both all-weather protection and electrical power. Module consists of array of circular silicon solar cells bonded to fiberglass substrate roof shingle with fluorinated ethylene propylene encapsulant.

Mechanical Modulation of Phonon-Assisted Field Emission in a Silicon Nanomembrane Detector for Time-of-Flight Mass Spectrometry

PubMed Central

Park, Jonghoo; Blick, Robert H.

2016-01-01

We demonstrate mechanical modulation of phonon-assisted field emission in a free-standing silicon nanomembrane detector for time-of-flight mass spectrometry of proteins. The impacts of ion bombardment on the silicon nanomembrane have been explored in both mechanical and electrical points of view. Locally elevated lattice temperature in the silicon nanomembrane, resulting from the transduction of ion kinetic energy into thermal energy through the ion bombardment, induces not only phonon-assisted field emission but also a mechanical vibration in the silicon nanomembrane. The coupling of these mechanical and electrical phenomenon leads to mechanical modulation of phonon-assisted field emission. The thermal energy relaxation through mechanical vibration in addition to the lateral heat conduction and field emission in the silicon nanomembrane offers effective cooling of the nanomembrane, thereby allowing high resolution mass analysis. PMID:26861329

Three Dimensional Transient Analysis of Microstrip Circuits in Multilayered Anisotropic Media

DTIC Science & Technology

1994-01-18

time fat rfVWh ifl~ttUktOnS. watching e..,ing| galai• fld t gatlwnq and maintaningn~ te data needed. an cems~l~lzn andI reuiewing 1h cOllection Of...noise on the passive via are derived. The coupling responses in the frequency domain and crosstalk waveforms in the time domain for some multilayered...source, developed across the module-backplane connector. The finite-difference time -domain (FD-TD) technique, which is based on the discretization of

BI-ground microstrip array coil vs. conventional microstrip array coil for mouse imaging at 7 tesla

NASA Astrophysics Data System (ADS)

Hernández, Ricardo; Terrones, M. A. López; Jakob, P. M.

2012-10-01

At high field strengths, the need for more efficient high frequency coils has grown. Since the radiation losses and the interaction between coil and sample increase proportionally to field strength, the quality factor (Q) and the sensitivity of the coil decrease as consequence of these negative effects. Since Zhang et al proposed in 2001 a new surface coil based on the microstrip transmission line for high frequency, different Tx-Rx phased arrays based on this concept have been already introduced in animal and whole body systems at high field strengths, each of them with different modifications in order to get better field homogeneity, SNR or isolation between coil elements in the array. All these arrays for animals systems have been built for rat imaging. One of these modifications is called BI-Ground Microstrip Array Coil (BIGMAC). The implementation of a smaller two-channel BIGMAC design for mouse imaging is studied and its performance compared to a two-channel conventional Microstrip array at 7 Tesla, the higher isolation by using BIGMAC elements in comparison with conventional Microstrip elements is shown in this work.

Microstrip reflectarray antenna for the SCANSCAT radar application

NASA Technical Reports Server (NTRS)

Huang, John

1990-01-01

This publication presents an antenna system that has been proposed as one of the candidates for the SCANSCAT (Scanned Scatterometer) radar application. It is the mechanically steered planar microstrip reflectarray. Due to its thin, lightweight structure, the antenna's mechanical rotation will impose minimum angular momentum for the spacecraft. Since no power-dividing circuitry is needed for its many radiating microstrip patches, this electrically large array antenna demonstrates excellent power efficiency. In addition, this fairly new antenna concept can provide many significant advantages over a conventional parabolic reflector. The basic formulation for the radiation fields of the microstrip reflectarray is presented. This formulation is based on the array theory augmented by the Uniform Geometrical Theory of Diffraction (UTD). A computer code for analyzing the microstrip reflectarray's performances, such as far-field patterns, efficiency, etc., is also listed in this report. It is proposed here that a breadboard unit of this microstrip reflectarray should be constructed and tested in the future to validate the calculated performance. The antenna concept presented here can also be applied in many other types of radars where a large array antenna is needed.

Shielded microstrip array for 7T human MR imaging.

PubMed

Wu, Bing; Wang, Chunsheng; Kelley, Douglas A C; Xu, Duan; Vigneron, Daniel B; Nelson, Sarah J; Zhang, Xiaoliang

2010-01-01

The high-frequency transceiver array based on the microstrip transmission line design is a promising technique for ultrahigh field magnetic resonance imaging (MRI) signal excitation and reception. However, with the increase of radio-frequency (RF) channels, the size of the ground plane in each microstrip coil element is usually not sufficient to provide a perfect ground. Consequently, the transceiver array may suffer from cable resonance, lower Q-factors, and imaging quality degradations. In this paper, we present an approach to improving the performance of microstrip transceiver arrays by introducing RF shielding outside the microstrip array and the feeding coaxial cables. This improvement reduced interactions among cables, increased resonance stability, and Q-factors, and thus improved imaging quality. An experimental method was also introduced and utilized for quantitative measurement and evaluation of RF coil resonance stability or "cable resonance" behavior.

Shielded Microstrip Array for 7T Human MR Imaging

PubMed Central

Wu, Bing; Wang, Chunsheng; Kelley, Douglas A. C.; Xu, Duan; Vigneron, Daniel B.; Nelson, Sarah J.

2010-01-01

The high-frequency transceiver array based on the microstrip transmission line design is a promising technique for ultrahigh field magnetic resonance imaging (MRI) signal excitation and reception. However, with the increase of radio-frequency (RF) channels, the size of the ground plane in each microstrip coil element is usually not sufficient to provide a perfect ground. Consequently, the transceiver array may suffer from cable resonance, lower Q-factors, and imaging quality degradations. In this paper, we present an approach to improving the performance of microstrip transceiver arrays by introducing RF shielding outside the microstrip array and the feeding coaxial cables. This improvement reduced interactions among cables, increased resonance stability, and Q-factors, and thus improved imaging quality. An experimental method was also introduced and utilized for quantitative measurement and evaluation of RF coil resonance stability or “cable resonance” behavior. PMID:19822470

Efficient Approaches for Evaluating the Planar Microstrip Green's Function and its Applications to the Analysis of Microstrip Antennas.

NASA Astrophysics Data System (ADS)

Barkeshli, Sina

A relatively simple and efficient closed form asymptotic representation of the microstrip dyadic surface Green's function is developed. The large parameter in this asymptotic development is proportional to the lateral separation between the source and field points along the planar microstrip configuration. Surprisingly, this asymptotic solution remains accurate even for very small (almost two tenths of a wavelength) lateral separation of the source and field points. The present asymptotic Green's function will thus allow a very efficient calculation of the currents excited on microstrip antenna patches/feed lines and monolithic millimeter and microwave integrated circuit (MIMIC) elements based on a moment method (MM) solution of an integral equation for these currents. The kernal of the latter integral equation is the present asymptotic form of the microstrip Green's function. It is noted that the conventional Sommerfeld integral representation of the microstrip surface Green's function is very poorly convergent when used in this MM formulation. In addition, an efficient exact steepest descent path integral form employing a radially propagating representation of the microstrip dyadic Green's function is also derived which exhibits a relatively faster convergence when compared to the conventional Sommerfeld integral representation. The same steepest descent form could also be obtained by deforming the integration contour of the conventional Sommerfeld representation; however, the radially propagating integral representation exhibits better convergence properties for laterally separated source and field points even before the steepest descent path of integration is used. Numerical results based on the efficient closed form asymptotic solution for the microstrip surface Green's function developed in this work are presented for the mutual coupling between a pair of dipoles on a single layer grounded dielectric slab. The accuracy of the latter calculations is confirmed by comparison with results based on an exact integral representation for that Green's function.

Optically tuned terahertz modulator based on annealed multilayer MoS2.

PubMed

Cao, Yapeng; Gan, Sheng; Geng, Zhaoxin; Liu, Jian; Yang, Yuping; Bao, Qiaoling; Chen, Hongda

2016-03-08

Controlling the propagation properties of terahertz waves is very important in terahertz technologies applied in high-speed communication. Therefore a new-type optically tuned terahertz modulator based on multilayer-MoS2 and silicon is experimentally demonstrated. The terahertz transmission could be significantly modulated by changing the power of the pumping laser. With an annealing treatment as a p-doping method, MoS2 on silicon demonstrates a triple enhancement of terahertz modulation depth compared with the bare silicon. This MoS2-based device even exhibited much higher modulation efficiency than the graphene-based device. We also analyzed the mechanism of the modulation enhancement originated from annealed MoS2, and found that it is different from that of graphene-based device. The unique optical modulating properties of the device exhibit tremendous promise for applications in terahertz switch.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Hacke, P.; Terwilliger, K.; Koch, S.

Three crystalline silicon module designs were distributed in five replicas each to five laboratories for testing according to the IEC 62804 (Committee Draft) system voltage durability qualification test for crystalline silicon photovoltaic (PV) modules. The stress tests were performed in environmental chambers at 60 degrees C, 85% relative humidity, 96 h, and with module nameplate system voltage applied.

Design and fabrication of microstrip antenna arrays

NASA Technical Reports Server (NTRS)

1978-01-01

A microstrip array project was conducted to demonstrate the feasibility of designing and fabricating simple, low cost, low sidelobe phased arrays with circular disk microstrip radiating elements. Design data were presented for microstrip elements and arrays including the effects of the protective covers, the mutual interaction between elements, and stripline feed network design. Low cost multilayer laminate fabrication techniques were also investigated. Utilizing this design data two C-band low sidelobe arrays were fabricated and tested: an eight-element linear and a sixty-four element planar array. These arrays incorporated stripline Butler matrix feed networks to produce a low sidelobe broadside beam.

Ultra-thin silicon/electro-optic polymer hybrid waveguide modulators

DOE Office of Scientific and Technical Information (OSTI.GOV)

Qiu, Feng; Spring, Andrew M.; Sato, Hiromu

2015-09-21

Ultra-thin silicon and electro-optic (EO) polymer hybrid waveguide modulators have been designed and fabricated. The waveguide consists of a silicon core with a thickness of 30 nm and a width of 2 μm. The cladding is an EO polymer. Optical mode calculation reveals that 55% of the optical field around the silicon extends into the EO polymer in the TE mode. A Mach-Zehnder interferometer (MZI) modulator was prepared using common coplanar electrodes. The measured half-wave voltage of the MZI with 7 μm spacing and 1.3 cm long electrodes is 4.6 V at 1550 nm. The evaluated EO coefficient is 70 pm/V, which is comparable to that ofmore » the bulk EO polymer film. Using ultra-thin silicon is beneficial in order to reduce the side-wall scattering loss, yielding a propagation loss of 4.0 dB/cm. We also investigated a mode converter which couples light from the hybrid EO waveguide into a strip silicon waveguide. The calculation indicates that the coupling loss between these two devices is small enough to exploit the potential fusion of a hybrid EO polymer modulator together with a silicon micro-photonics device.« less

Optimization of a Circularly Polarized Patch Antenna for Two Frequency Bands

DTIC Science & Technology

2015-09-01

the various techniques that can be used to improve the performance of a circularly polarized microstrip patch antenna . These adjustments include... microstrip antenna . 15. SUBJECT TERMS Patch Antenna , Circular Polarization 16. SECURITY CLASSIFICATION OF: 17. LIMITATION OF ABSTRACT...Frequency Structural Simulator (HFSS) has allowed engineers to create scalable multiband microstrip antennas . Several factors were taken into

Cylindrical Antenna Using Near Zero Index Metamaterial

DTIC Science & Technology

2012-07-24

circularly polarized microstrip patch antenna (SFCP-MPA). Simultaneous enhancement on antenna gain, impedance bandwidth (ZBW) and axial-ratio...K. L. Chung, and P. Akkaraekthalin, "Simultaneous gain and bandwidths enhancement of a single-feed circularly polarized microstrip patch antenna ...device for enhancing the directivity and port isolation of a dual-frequency dual- polarization (DFDP) microstrip antenna by using metamaterial

Determination of electron beam polarization using electron detector in Compton polarimeter with less than 1% statistical and systematic uncertainty

DOE Office of Scientific and Technical Information (OSTI.GOV)

Narayan, Amrendra

2015-05-01

The Q-weak experiment aims to measure the weak charge of proton with a precision of 4.2%. The proposed precision on weak charge required a 2.5% measurement of the parity violating asymmetry in elastic electron - proton scattering. Polarimetry was the largest experimental contribution to this uncertainty and a new Compton polarimeter was installed in Hall C at Jefferson Lab to make the goal achievable. In this polarimeter the electron beam collides with green laser light in a low gain Fabry-Perot Cavity; the scattered electrons are detected in 4 planes of a novel diamond micro strip detector while the back scatteredmore » photons are detected in lead tungstate crystals. This diamond micro-strip detector is the first such device to be used as a tracking detector in a nuclear and particle physics experiment. The diamond detectors are read out using custom built electronic modules that include a preamplifier, a pulse shaping amplifier and a discriminator for each detector micro-strip. We use field programmable gate array based general purpose logic modules for event selection and histogramming. Extensive Monte Carlo simulations and data acquisition simulations were performed to estimate the systematic uncertainties. Additionally, the Moller and Compton polarimeters were cross calibrated at low electron beam currents using a series of interleaved measurements. In this dissertation, we describe all the subsystems of the Compton polarimeter with emphasis on the electron detector. We focus on the FPGA based data acquisition system built by the author and the data analysis methods implemented by the author. The simulations of the data acquisition and the polarimeter that helped rigorously establish the systematic uncertainties of the polarimeter are also elaborated, resulting in the first sub 1% measurement of low energy (?1 GeV) electron beam polarization with a Compton electron detector. We have demonstrated that diamond based micro-strip detectors can be used for tracking in a high radiation environment and it has enabled us to achieve the desired precision in the measurement of the electron beam polarization which in turn has allowed the most precise determination of the weak charge of the proton.« less

Determination of electron beam polarization using electron detector in Compton polarimeter with less than 1% statistical and systematic uncertainty

NASA Astrophysics Data System (ADS)

Narayan, Amrendra

The Q-weak experiment aims to measure the weak charge of proton with a precision of 4.2%. The proposed precision on weak charge required a 2.5% measurement of the parity violating asymmetry in elastic electron - proton scattering. Polarimetry was the largest experimental contribution to this uncertainty and a new Compton polarimeter was installed in Hall C at Jefferson Lab to make the goal achievable. In this polarimeter the electron beam collides with green laser light in a low gain Fabry-Perot Cavity; the scattered electrons are detected in 4 planes of a novel diamond micro strip detector while the back scattered photons are detected in lead tungstate crystals. This diamond micro-strip detector is the first such device to be used as a tracking detector in a nuclear and particle physics experiment. The diamond detectors are read out using custom built electronic modules that include a preamplifier, a pulse shaping amplifier and a discriminator for each detector micro-strip. We use field programmable gate array based general purpose logic modules for event selection and histogramming. Extensive Monte Carlo simulations and data acquisition simulations were performed to estimate the systematic uncertainties. Additionally, the Moller and Compton polarimeters were cross calibrated at low electron beam currents using a series of interleaved measurements. In this dissertation, we describe all the subsystems of the Compton polarimeter with emphasis on the electron detector. We focus on the FPGA based data acquisition system built by the author and the data analysis methods implemented by the author. The simulations of the data acquisition and the polarimeter that helped rigorously establish the systematic uncertainties of the polarimeter are also elaborated, resulting in the first sub 1% measurement of low energy (~1GeV) electron beam polarization with a Compton electron detector. We have demonstrated that diamond based micro-strip detectors can be used for tracking in a high radiation environment and it has enabled us to achieve the desired precision in the measurement of the electron beam polarization which in turn has allowed the most precise determination of the weak charge of the proton.

Chemical Bonding Technology: Direct Investigation of Interfacial Bonds

NASA Technical Reports Server (NTRS)

Koenig, J. L.; Boerio, F. J.; Plueddemann, E. P.; Miller, J.; Willis, P. B.; Cuddihy, E. F.

1986-01-01

This is the third Flat-Plate Solar Array (FSA) Project document reporting on chemical bonding technology for terrestrial photovoltaic (PV) modules. The impetus for this work originated in the late 1970s when PV modules employing silicone encapsulation materials were undergoing delamination during outdoor exposure. At that time, manufacturers were not employing adhesion promoters and, hence, module interfaces in common with the silicone materials were only in physical contact and therefore easily prone to separation if, for example, water were to penetrate to the interfaces. Delamination with silicone materials virtually vanished when adhesion promoters, recommended by silicone manufacturers, were used. The activities related to the direct investigation of chemically bonded interfaces are described.

Analysis and evaluation in the production process and equipment area of the low-cost solar array project

NASA Technical Reports Server (NTRS)

Goldman, H.; Wolf, M.

1979-01-01

The energy consumed in manufacturing silicon solar cell modules was calculated for the current process, as well as for 1982 and 1986 projected processes. In addition, energy payback times for the above three sequences are shown. The module manufacturing energy was partitioned two ways. In one way, the silicon reduction, silicon purification, sheet formation, cell fabrication, and encapsulation energies were found. In addition, the facility, equipment, processing material and direct material lost-in-process energies were appropriated in junction formation processes and full module manufacturing sequences. A brief methodology accounting for the energy of silicon wafers lost-in-processing during cell manufacturing is described.

Using carrier-depletion silicon modulators for optical power monitoring.

PubMed

Yu, Hui; Korn, Dietmar; Pantouvaki, Marianna; Van Campenhout, Joris; Komorowska, Katarzyna; Verheyen, Peter; Lepage, Guy; Absil, Philippe; Hillerkuss, David; Alloatti, Luca; Leuthold, Juerg; Baets, Roel; Bogaerts, Wim

2012-11-15

Defect-mediated subbandgap absorption is observed in ion-implanted silicon-on-oxide waveguides that experience a rapid thermal annealing at 1075°C. With this effect, general carrier-depletion silicon modulators exhibit the capability of optical power monitoring. Responsivity is measured to be 22 mA/W for a 3 mm long Mach-Zehnder modulator of 2×10(18) cm(-3) doping concentration at -7.1 V bias voltage and 5.9 mA/W for a ring modulator of 1×10(18) cm(-3) doping concentration at -10 V bias voltage. The former is used to demonstrate data detection of up to 35 Gbits/s.

Multi-Channel Capacitive Sensor Arrays

PubMed Central

Wang, Bingnan; Long, Jiang; Teo, Koon Hoo

2016-01-01

In this paper, multi-channel capacitive sensor arrays based on microstrip band-stop filters are studied. The sensor arrays can be used to detect the proximity of objects at different positions and directions. Each capacitive sensing structure in the array is connected to an inductive element to form resonance at different frequencies. The resonances are designed to be isolated in the frequency spectrum, such that the change in one channel does not affect resonances at other channels. The inductive element associated with each capacitive sensor can be surface-mounted inductors, integrated microstrip inductors or metamaterial-inspired structures. We show that by using metamaterial split-ring structures coupled to a microstrip line, the quality factor of each resonance can be greatly improved compared to conventional surface-mounted or microstrip meander inductors. With such a microstrip-coupled split-ring design, more sensing elements can be integrated in the same frequency spectrum, and the sensitivity can be greatly improved. PMID:26821023

Low loss poly-silicon for high performance capacitive silicon modulators.

PubMed

Douix, Maurin; Baudot, Charles; Marris-Morini, Delphine; Valéry, Alexia; Fowler, Daivid; Acosta-Alba, Pablo; Kerdilès, Sébastien; Euvrard, Catherine; Blanc, Romuald; Beneyton, Rémi; Souhaité, Aurélie; Crémer, Sébastien; Vulliet, Nathalie; Vivien, Laurent; Boeuf, Frédéric

2018-03-05

Optical properties of poly-silicon material are investigated to be integrated in new silicon photonics devices, such as capacitive modulators. Test structure fabrication is done on 300 mm wafer using LPCVD deposition: 300 nm thick amorphous silicon layers are deposited on thermal oxide, followed by solid phase crystallization anneal. Rib waveguides are fabricated and optical propagation losses measured at 1.31 µm. Physical analysis (TEM ASTAR, AFM and SIMS) are used to assess the origin of losses. Optimal deposition and annealing conditions have been defined, resulting in 400 nm-wide rib waveguides with only 9.2-10 dB/cm losses.

Heterogeneously-integrated VCSEL using high-contrast grating on silicon

NASA Astrophysics Data System (ADS)

Ferrara, James; Zhu, Li; Yang, Weijian; Qiao, Pengfei; Chang-Hasnain, Connie J.

2015-02-01

We present a unique heterogeneous integration approach for VCSELs on silicon using eutectic bonding. An electrically pumped III-V - silicon heterogeneous VCSEL is demonstrated using a high-contrast grating (HCG) reflector on silicon. CW output power >1.5 mW, thermal resistance of 1.46 K/mW, and 5 Gb/s direct modulation is demonstrated. We also explore the possibility of an all-HCG VCSEL structure that would benefit from stronger thermal performance, larger tuning efficiency, and higher direct modulation speeds.

Integral bypass diodes in an amorphous silicon alloy photovoltaic module

NASA Technical Reports Server (NTRS)

Hanak, J. J.; Flaisher, H.

1991-01-01

Thin-film, tandem-junction, amorphous silicon (a-Si) photovoltaic modules were constructed in which a part of the a-Si alloy cell material is used to form bypass protection diodes. This integral design circumvents the need for incorporating external, conventional diodes, thus simplifying the manufacturing process and reducing module weight.

Forty Gb/s hybrid silicon Mach-Zehnder modulator with low chirp.

PubMed

Chen, Hui-Wen; Peters, Jonathan D; Bowers, John E

2011-01-17

We demonstrate a hybrid silicon modulator operating up to 40 Gb/s with 11.4 dB extinction ratio. The modulator has voltage-length product of 2.4 V-mm and chirp of -0.75 over the entire bias range. As a switch, it has a switching time less than 20 ps.

77 FR 37877 - Crystalline Silicon Photovoltaic Cells, Whether or Not Assembled Into Modules, From the People's...

Federal Register 2010, 2011, 2012, 2013, 2014

2012-06-25

... Photovoltaic Cells, Whether or Not Assembled Into Modules, From the People's Republic of China: Preliminary... crystalline silicon photovoltaic cells, whether or not assembled into modules (``solar cells''), from the... names of these companies in the table in the ``Preliminary Determination'' section in the solar cells...

Integrated Thermal Modules for Cooling Silicon and Silicon Carbide Power Modules

DTIC Science & Technology

2007-06-11

analyses, bench tests, and motor tests comprise the program. The ITMs, in place of standard heatsinks, use a highly conductive pyrolytic graphite to...passively cool power modules. Initial results show that even simple ITMs can lower chip temperatures by 20 deg. C and 10 deg. C with engine oil and

A High Temperature Silicon Carbide mosfet Power Module With Integrated Silicon-On-Insulator-Based Gate Drive

DOE PAGES

Wang, Zhiqiang; Shi, Xiaojie; Tolbert, Leon M.; ...

2014-04-30

Here we present a board-level integrated silicon carbide (SiC) MOSFET power module for high temperature and high power density application. Specifically, a silicon-on-insulator (SOI)-based gate driver capable of operating at 200°C ambient temperature is designed and fabricated. The sourcing and sinking current capability of the gate driver are tested under various ambient temperatures. Also, a 1200 V/100 A SiC MOSFET phase-leg power module is developed utilizing high temperature packaging technologies. The static characteristics, switching performance, and short-circuit behavior of the fabricated power module are fully evaluated at different temperatures. Moreover, a buck converter prototype composed of the SOI gate drivermore » and SiC power module is built for high temperature continuous operation. The converter is operated at different switching frequencies up to 100 kHz, with its junction temperature monitored by a thermosensitive electrical parameter and compared with thermal simulation results. The experimental results from the continuous operation demonstrate the high temperature capability of the power module at a junction temperature greater than 225°C.« less

Compact Magic-T using microstrip-slotline transitions

NASA Technical Reports Server (NTRS)

U-Yen, Kongpop (Inventor); Wollack, Edward J. (Inventor); Doiron, Terence (Inventor); Moseley, Samuel H. (Inventor)

2010-01-01

The design of a compact low-loss Magic-T is described. The planar Magic-T incorporates a compact microstrip-slotline tee junction and small microstrip-slotline transition area to reduce slotline radiation. The Magic-T produces broadband in-phase and out-of-phase power combiner/divider responses, has low in-band insertion loss, and small in-band phase and amplitude imbalance.

Probe-fed semi circular microstrip antenna vis-à-vis circular microstrip antenna: a necessary revisit

NASA Astrophysics Data System (ADS)

Ghosh, S. K.; Varshney, S. K.; Chakraborty, S.; Singh, L. L. K.; Chattopadhyay, S.

2018-03-01

Microstrip patch antenna of semicircular geometry has been investigated in view of miniaturization of conventional circular geometry. The precise operating frequency of the semicircular microstrip patch antenna is the most significant parameter to be determined in order to design such antenna system to achieve the optimum performance. In the present investigation an improved formulation is presented for accurate determination of the resonant frequency of semicircular patch. Also, the radiation property of such patch is thoroughly investigated. Through comparisons are documented amongst the circular and semicircular patches. It is revealed that, the semicircular patch offers more better radiation performance compared to circular.

Application of quantum-dot multi-wavelength lasers and silicon photonic ring resonators to data-center optical interconnects

NASA Astrophysics Data System (ADS)

Beckett, Douglas J. S.; Hickey, Ryan; Logan, Dylan F.; Knights, Andrew P.; Chen, Rong; Cao, Bin; Wheeldon, Jeffery F.

2018-02-01

Quantum dot comb sources integrated with silicon photonic ring-resonator filters and modulators enable the realization of optical sub-components and modules for both inter- and intra-data-center applications. Low-noise, multi-wavelength, single-chip, laser sources, PAM4 modulation and direct detection allow a practical, scalable, architecture for applications beyond 400 Gb/s. Multi-wavelength, single-chip light sources are essential for reducing power dissipation, space and cost, while silicon photonic ring resonators offer high-performance with space and power efficiency.

Hybrid metasurface for ultra-broadband terahertz modulation

DOE Office of Scientific and Technical Information (OSTI.GOV)

Heyes, Jane E.; Withayachumnankul, Withawat; Grady, Nathaniel K.

2014-11-05

We demonstrate an ultra-broadband free-space terahertz modulator based on a semiconductor-integrated metasurface. The modulator is made of a planar array of metal cut-wires on a silicon-on-sapphire substrate, where the silicon layer functions as photoconductive switches. Without external excitation, the cut-wire array exhibits a Lorentzian resonant response with a transmission passband spanning dc up to the fundamental dipole resonance above 2 THz. Under photoexcitation with 1.55 eV near-infrared light, the silicon regions in the cut-wire gaps become highly conductive, causing a transition of the resonant metasurface to a wire grating with a Drude response. In effect, the low-frequency passband below 2more » THz evolves into a stopband for the incident terahertz waves. Experimental validations confirm a bandwidth of at least 100%, spanning 0.5 to 1.5 THz with -10 dB modulation depth. This modulation depth is far superior to -5 dB achievable from a plain silicon-on-sapphire substrate with effectively 25 times higher pumping energy. The proposed concept of ultra-broadband metasurface modulator can be readily extended to electrically controlled terahertz wave modulation.« less

Advancements in n-Type Base Crystalline Silicon Solar Cells and Their Emergence in the Photovoltaic Industry

PubMed Central

ur Rehman, Atteq; Lee, Soo Hong

2013-01-01

The p-type crystalline silicon wafers have occupied most of the solar cell market today. However, modules made with n-type crystalline silicon wafers are actually the most efficient modules up to date. This is because the material properties offered by n-type crystalline silicon substrates are suitable for higher efficiencies. Properties such as the absence of boron-oxygen related defects and a greater tolerance to key metal impurities by n-type crystalline silicon substrates are major factors that underline the efficiency of n-type crystalline silicon wafer modules. The bi-facial design of n-type cells with good rear-side electronic and optical properties on an industrial scale can be shaped as well. Furthermore, the development in the industrialization of solar cell designs based on n-type crystalline silicon substrates also highlights its boost in the contributions to the photovoltaic industry. In this paper, a review of various solar cell structures that can be realized on n-type crystalline silicon substrates will be given. Moreover, the current standing of solar cell technology based on n-type substrates and its contribution in photovoltaic industry will also be discussed. PMID:24459433

Advancements in n-type base crystalline silicon solar cells and their emergence in the photovoltaic industry.

PubMed

ur Rehman, Atteq; Lee, Soo Hong

2013-01-01

The p-type crystalline silicon wafers have occupied most of the solar cell market today. However, modules made with n-type crystalline silicon wafers are actually the most efficient modules up to date. This is because the material properties offered by n-type crystalline silicon substrates are suitable for higher efficiencies. Properties such as the absence of boron-oxygen related defects and a greater tolerance to key metal impurities by n-type crystalline silicon substrates are major factors that underline the efficiency of n-type crystalline silicon wafer modules. The bi-facial design of n-type cells with good rear-side electronic and optical properties on an industrial scale can be shaped as well. Furthermore, the development in the industrialization of solar cell designs based on n-type crystalline silicon substrates also highlights its boost in the contributions to the photovoltaic industry. In this paper, a review of various solar cell structures that can be realized on n-type crystalline silicon substrates will be given. Moreover, the current standing of solar cell technology based on n-type substrates and its contribution in photovoltaic industry will also be discussed.

The AMS tracking detector for cosmic-ray physics in space

NASA Astrophysics Data System (ADS)

Bourquin, Maurice; AMS Tracker Collaboration

2005-04-01

AMS-02 is a general-purpose spectrometer designed to measure cosmic rays and gamma rays in near-Earth orbit. The main scientific motivations are the search for cosmic anti-matter, the search for dark matter, precision measurements on the relative abundance of different nuclei and isotopes, as well as the measurement of very high-energy gamma rays. Constructed by a large international collaboration of institutes from America, Asia and Europe, it will collect data on the International Space Station for a period of at least three years. In this contribution, I first identify the various detector requirements necessary to carry out this ambitious program. In particular, a large-area silicon microstrip detector inside a 0.8 T superconducting magnet is well suited to measure rigidity p/Z and specific energy loss d E/d x of cosmic rays, as well as the direction and energy of converted gamma rays. I review the advantage of such a silicon-tracking detector, taking into account the constraints of the space environment. The collaboration has gained extensive operating experience with double-sided silicon sensors in beam tests, and above all with AMS-01, a precursor spectrometer flown in the cargo bay of the Shuttle Discovery. During the entire 10-day STS-91 mission, the Silicon Tracker functioned without fault and with good spatial resolution. From the lessons learned with AMS-01, improvements were made to the design and assembly procedure of the 2500 sensors of AMS-02. As a result, the charge identification has been extended from Oxygen ( Z=8) to Iron ( Z=26). The physics reach of the new spectrometer is presented.

Ultrasensitive Silicon Photonic-Crystal Nanobeam Electro-Optical Modulator (Preprint)

DTIC Science & Technology

2013-10-01

and simulation results are presented for an ultralow switching energy, resonator based silicon-on-insulator (SOI) electro-optical modulator. The...joshua.hendrickson@wpafb.af.mil Abstract: Design and simulation results are presented for an ultralow switching energy, resonator based silicon-on...S. Fegadolli, J. E. B. Oliveira, V. R. Almeida, and A. Scherer, “Compact and low power consumption tunable photonic crystal nanobeam cavity,” 21

Design and Performance of A High Resolution Micro-Spec: An Integrated Sub-Millimeter Spectrometer

NASA Technical Reports Server (NTRS)

Barrentine, Emily M.; Cataldo, Giuseppe; Brown, Ari D.; Ehsan, Negar; Noroozian, Omid; Stevenson, Thomas R.; U-Yen, Kongpop; Wollack, Edward J.; Moseley, S. Harvey

2016-01-01

Micro-Spec is a compact sub-millimeter (approximately 100 GHz--1:1 THz) spectrometer which uses low loss superconducting microstrip transmission lines and a single-crystal silicon dielectric to integrate all of the components of a diffraction grating spectrometer onto a single chip. We have already successfully evaluated the performance of a prototype Micro-Spec, with spectral resolving power, R=64. Here we present our progress towards developing a higher resolution Micro-Spec, which would enable the first science returns in a balloon flight version of this instrument. We describe modifications to the design in scaling from a R=64 to a R=256 instrument, as well as the ultimate performance limits and design concerns when scaling this instrument to higher resolutions.

NASA Tech Briefs, December 2013

NASA Technical Reports Server (NTRS)

2013-01-01

Topics include: Microwave Kinetic Inductance Detector With; Selective Polarization Coupling; Flexible Microstrip Circuits for; Superconducting Electronics; CFD Extraction Tool for TecPlot From DPLR Solutions; RECOVIR Software for Identifying Viruses; Enhanced Contact Graph Routing (ECGR) MACHETE Simulation Model; Orbital Debris Engineering Model (ORDEM) v.3; Scatter-Reducing Sounding Filtration Using a Genetic Algorithm and Mean Monthly Standard Deviation; Thermo-Mechanical Methodology for Stabilizing Shape Memory Alloy Response; Hermetic Seal Designs for Sample Return Sample Tubes; Silicon Alignment Pins: An Easy Way To Realize a Wafer-to-Wafer Alignment; Positive-Buoyancy Rover for Under Ice Mobility; Electric Machine With Boosted Inductance to Stabilize Current Control; International Space Station-Based Electromagnetic Launcher for Space Science Payloads; Advanced Hybrid Spacesuit Concept Featuring Integrated Open Loop and Closed Loop Ventilation Systems; Data Quality Screening Service.

77 FR 25400 - Crystalline Silicon Photovoltaic Cells, Whether or Not Assembled Into Modules, From the People's...

Federal Register 2010, 2011, 2012, 2013, 2014

2012-04-30

... Photovoltaic Cells, Whether or Not Assembled Into Modules, From the People's Republic of China: Alignment of... crystalline silicon photovoltaic cells, whether or not assembled into modules (solar cells) from the People's... Department initiated the AD and CVD investigations of solar cells from the PRC.\\1\\ On March 26, 2012, the...

Fatigue degradation and electric recovery in Silicon solar cells embedded in photovoltaic modules

PubMed Central

Paggi, Marco; Berardone, Irene; Infuso, Andrea; Corrado, Mauro

2014-01-01

Cracking in Silicon solar cells is an important factor for the electrical power-loss of photovoltaic modules. Simple geometrical criteria identifying the amount of inactive cell areas depending on the position of cracks with respect to the main electric conductors have been proposed in the literature to predict worst case scenarios. Here we present an experimental study based on the electroluminescence (EL) technique showing that crack propagation in monocrystalline Silicon cells embedded in photovoltaic (PV) modules is a much more complex phenomenon. In spite of the very brittle nature of Silicon, due to the action of the encapsulating polymer and residual thermo-elastic stresses, cracked regions can recover the electric conductivity during mechanical unloading due to crack closure. During cyclic bending, fatigue degradation is reported. This pinpoints the importance of reducing cyclic stresses caused by vibrations due to transportation and use, in order to limit the effect of cracking in Silicon cells. PMID:24675974

Microstrip monopulse antenna for land mobile communications

NASA Technical Reports Server (NTRS)

Garcia, Q.; Martin, C.; Delvalle, J. C.; Jongejans, A.; Rinous, P.; Travers, M. N.

1993-01-01

Low cost is one of the main requirements in a communication system suitable for mass production, as it is the case for satellite land mobile communications. Microstrip technology fulfills this requirement which must be supported by a low cost tracking system design. The tradeoff led us to a prototype antenna composed of microstrip patches based on electromechanical closed-loop principle; the design and the results obtained are described.

Generation of tunable, high repetition rate optical frequency combs using on-chip silicon modulators

NASA Astrophysics Data System (ADS)

Nagarjun, K. P.; Jeyaselvan, Vadivukarassi; Selvaraja, Shankar Kumar; Supradeepa, V. R.

2018-04-01

We experimentally demonstrate tunable, highly-stable frequency combs with high repetition-rates using a single, charge injection based silicon PN modulator. In this work, we demonstrate combs in the C-band with over 8 lines in a 20-dB bandwidth. We demonstrate continuous tuning of the center frequency in the C-band and tuning of the repetition-rate from 7.5GHz to 12.5GHz. We also demonstrate through simulations the potential for bandwidth scaling using an optimized silicon PIN modulator. We find that, the time varying free carrier absorption due to carrier injection, an undesirable effect in data modulators, assists here in enhancing flatness in the generated combs.

Thermal conductivity engineering in width-modulated silicon nanowires and thermoelectric efficiency enhancement

NASA Astrophysics Data System (ADS)

Zianni, Xanthippi

2018-03-01

Width-modulated nanowires have been proposed as efficient thermoelectric materials. Here, the electron and phonon transport properties and the thermoelectric efficiency are discussed for dimensions above the quantum confinement regime. The thermal conductivity decreases dramatically in the presence of thin constrictions due to their ballistic thermal resistance. It shows a scaling behavior upon the width-modulation rate that allows for thermal conductivity engineering. The electron conductivity also decreases due to enhanced boundary scattering by the constrictions. The effect of boundary scattering is weaker for electrons than for phonons and the overall thermoelectric efficiency is enhanced. A ZT enhancement by a factor of 20-30 is predicted for width-modulated nanowires compared to bulk silicon. Our findings indicate that width-modulated nanostructures are promising for developing silicon nanostructures with high thermoelectric efficiency.

Evaluation of cleaners for photovoltaic modules exposed in an outdoor environment

NASA Technical Reports Server (NTRS)

Knapp, W. D.

1979-01-01

Power recovery of silicone encapsulated and glass covered photovoltaic modules, exposed for two years to a suburban environment, was measured after washing with a variety of cleaners including detergents, abrasive soap, and hydrocarbon solvents. Silicone encapsulated modules in operating environments may experience significant power losses or require extensive periodic cleaning. Glass front-faced modules in similar situations are much less affected. Organic hydrocarbon solvents or abrasives were found to be about five times more effective than mild detergents in cleaning encapsulated modules.

Conditions for optimal efficiency of PCBM-based terahertz modulators

NASA Astrophysics Data System (ADS)

Yoo, Hyung Keun; Lee, Hanju; Lee, Kiejin; Kang, Chul; Kee, Chul-Sik; Hwang, In-Wook; Lee, Joong Wook

2017-10-01

We demonstrate the conditions for optimal modulation efficiency of active terahertz modulators based on phenyl-C61-butyric acid methyl ester (PCBM)-silicon hybrid structures. Highly efficient active control of the terahertz wave modulation was realized by controlling organic film thickness, annealing temperature, and laser excitation wavelength. Under the optimal conditions, the modulation efficiency reached nearly 100%. Charge distributions measured with a near-field scanning microwave microscanning technique corroborated the fact that the increase of photo-excited carriers due to the PCBM-silicon hybrid structure enables the enhancement of active modulation efficiency.

In-Situ Characterization of Potential-Induced Degradation in Crystalline Silicon Photovoltaic Modules Through Dark I–V Measurements

DOE PAGES

Luo, Wei; Hacke, Peter; Singh, Jai Prakash; ...

2016-11-14

Here, a temperature correction methodology for in-situ dark I-V(DIV) characterization of conventional p-type crystalline silicon photovoltaic (PV) modules undergoing potential-induced degradation (PID) is proposed.

High-efficiency W-band hybrid integrated photoreceiver module using UTC-PD and pHEMT amplifier

NASA Astrophysics Data System (ADS)

Umezawa, T.; Katshima, K.; Kanno, A.; Akahane, K.; Matsumoto, A.; Yamamoto, N.; Kawanishi, T.

2016-02-01

A 100-GHz narrowband photoreceiver module integrated with a zero-bias operational uni-traveling-carrier photodiode (UTC-PD) and a GaAs-based pseudomorphic high-electron-mobility transistor (pHEMT) amplifier was fabricated and characterized. Both devices exhibited flat frequency response and outstanding overall performance. The UTC-PD showed a 3-dB bandwidth beyond 110 GHz while the pHEMT amplifier featured low power consumption and a gain of 24 dB over the 85-100 GHz range. A butterfly metal package equipped with a 1.0 mm (W) coaxial connector and a microstrip-coplanar waveguide conversion substrate was designed for low insertion loss and low return loss. The fabricated photoreceiver module demonstrated high conversion gain, a maximum output power of +9.5 dBm at 96 GHz, and DC-power consumption of 0.21 W.

The design and simulation of UHF RFID microstrip antenna

NASA Astrophysics Data System (ADS)

Chen, Xiangqun; Huang, Rui; Shen, Liman; Liu, Liping; Xiong, Dezhi; Xiao, Xiangqi; Liu, Mouhai; Renheng, Xu

2018-02-01

At present, China has delineated UHF RFID communicating frequency range which is 840 ∼ 845 MHz and 920 ∼ 925 MHz, but most UHF microstrip antenna don’t carry out this standard, that leads to radio frequency pollution. In order to solve the problems above, a method combining theory and simulation is adopted. Combining with a new ceramic material, a 925.5 MHz RFID microstrip antenna is designed, which is optimized and simulated by HFSS software. The results show that the VSWR of this RFID microstrip antenna is relatively small in the vicinity of 922.5 MHz, the gain is 2.1 dBi, which can be widely used in China’s UHF RFID communicating equipments.

Band-gap engineering by molecular mechanical strain-induced giant tuning of the luminescence in colloidal amorphous porous silicon nanostructures.

PubMed

Mughal, A; El Demellawi, J K; Chaieb, Sahraoui

2014-12-14

Nano-silicon is a nanostructured material in which quantum or spatial confinement is the origin of the material's luminescence. When nano-silicon is broken into colloidal crystalline nanoparticles, its luminescence can be tuned across the visible spectrum only when the sizes of the nanoparticles, which are obtained via painstaking filtration methods that are difficult to scale up because of low yield, vary. Bright and tunable colloidal amorphous porous silicon nanostructures have not yet been reported. In this letter, we report on a 100 nm modulation in the emission of freestanding colloidal amorphous porous silicon nanostructures via band-gap engineering. The mechanism responsible for this tunable modulation, which is independent of the size of the individual particles and their distribution, is the distortion of the molecular orbitals by a strained silicon-silicon bond angle. This mechanism is also responsible for the amorphous-to-crystalline transformation of silicon.

A holistic view of crystalline silicon module reliability

DOE Office of Scientific and Technical Information (OSTI.GOV)

Hanoka, J.I.

1995-11-01

Several aspects of module reliability are discussed, particularly with reference to the encapsulant and its interaction with the metallization and interconnection of a module. A need to look at the module as a whole single unit is stressed. Also, the issue of a slight light degradation effect in crystalline silicon cells is discussed. A model for this is mentioned and it may well be that polycrystalline cells with dislocations may have an advantage.

Heterogeneous microring and Mach-Zehnder modulators based on lithium niobate and chalcogenide glasses on silicon

DOE PAGES

Rao, Ashutosh; Patil, Aniket; Chiles, Jeff; ...

2015-08-20

In this study, thin films of lithium niobate are wafer bonded onto silicon substrates and rib-loaded with a chalcogenide glass, Ge 23Sb 7S 70, to demonstrate strongly confined single-mode submicron waveguides, microring modulators, and Mach-Zehnder modulators in the telecom C band. The 200 μm radii microring modulators present 1.2 dB/cm waveguide propagation loss, 1.2 × 10 5 quality factor, 0.4 GHz/V tuning rate, and 13 dB extinction ratio. The 6 mm long Mach-Zehnder modulators have a half-wave voltage-length product of 3.8 V.cm and an extinction ratio of 15 dB. The demonstrated work is a key step towards enabling wafer scalemore » dense on-chip integration of high performance lithium niobate electro-optical devices on silicon for short reach optical interconnects and higher order advanced modulation schemes.« less

Heterogeneous microring and Mach-Zehnder modulators based on lithium niobate and chalcogenide glasses on silicon

DOE Office of Scientific and Technical Information (OSTI.GOV)

Rao, Ashutosh; Patil, Aniket; Chiles, Jeff

In this study, thin films of lithium niobate are wafer bonded onto silicon substrates and rib-loaded with a chalcogenide glass, Ge 23Sb 7S 70, to demonstrate strongly confined single-mode submicron waveguides, microring modulators, and Mach-Zehnder modulators in the telecom C band. The 200 μm radii microring modulators present 1.2 dB/cm waveguide propagation loss, 1.2 × 10 5 quality factor, 0.4 GHz/V tuning rate, and 13 dB extinction ratio. The 6 mm long Mach-Zehnder modulators have a half-wave voltage-length product of 3.8 V.cm and an extinction ratio of 15 dB. The demonstrated work is a key step towards enabling wafer scalemore » dense on-chip integration of high performance lithium niobate electro-optical devices on silicon for short reach optical interconnects and higher order advanced modulation schemes.« less

Size optimization for complex permeability measurement of magnetic thin films using a short-circuited microstrip line up to 30 GHz

NASA Astrophysics Data System (ADS)

Takeda, Shigeru; Naoe, Masayuki

2018-03-01

High-frequency permeability spectra of magnetic films were measured over a wideband frequency range of 0.1-30 GHz using a shielded and short-circuited microstrip line jig. In this measurement, spurious resonances had to be suppressed up to the highest frequency. To suppress these resonances, characteristic impedance of the microstrip line should approach 50 Ω at the junction between connector and microstrip line. The main factors dominating these resonances were structures of the jig and the sample. The dimensions were optimized in various experiments, and results demonstrated that the frequency could be raised to at least 20 GHz. For the transverse electromagnetic mode to transmit stably along the microstrip line, the preferred sample was rectangular, with the shorter side parallel to the line and the longer side perpendicular to it, and characteristic impedance strongly depended on the signal line width of the jig. However, too small a jig and sample led to a lower S/N ratio.

Front-Side Microstrip Line Feeding a Raised Antenna Patch

NASA Technical Reports Server (NTRS)

Hodges, Richard; Hoppe, Daniel

2005-01-01

An improved design concept for a printed-circuit patch antenna and the transmission line that feeds the patch calls for (1) a microstrip transmission line on the front (radiative) side of a printed-circuit board based on a thin, high-permittivity dielectric substrate; (2) using the conductor covering the back side of the circuit board as a common ground plane for both the microstrip line and the antenna patch; (3) supporting the antenna patch in front of the circuit board on a much thicker, lower-permittivity dielectric spacer layer; and (4) connecting the microstrip transmission line to the patch by use of a thin wire or narrow ribbon that extends through the thickness of the spacer and is oriented perpendicularly to the circuit-board plane. The thickness of the substrate is typically chosen so that a microstrip transmission line of practical width has an impedance between 50 and 100 ohms. The advantages of this design concept are best understood in the context of the disadvantages of prior design concepts, as explained

Microstrip antenna study for Pioneer Saturn/Uranus atmosphere entry probe

NASA Technical Reports Server (NTRS)

Kuhlman, E. A.

1974-01-01

The design parameters of a microstrip antenna were studied to determine its performance characteristics as affected by an atmospheric entry probe environment. The technical literature was reviewed to identify the known design and performance characteristics. These data were used to evaluate the expected effects of mission environments on the microstrip antenna design proposed for the Saturn/Uranus Atmospheric Entry Probe (SAEP). Radiation patterns and VSWR measurements were made to evaluate the performance in the SAEP thermal environment. Results of the literature search and pattern tests confirm that the microstrip antenna is a good choice as a transmitting antenna on the SAEP. The microstrip antenna is efficient, compact, and well suited to a space environment. The pattern can be controlled with a minimum beamwidth of 60 degrees (air substrate; e.g., honeycomb structure) and a maximum on the order of 100 degrees with higher dielectric constant substrates. The power handling capacity is good and can be improved by covering the antenna with a dielectric cover.

Wearable Inset-Fed FR4 Microstrip Patch Antenna Design

NASA Astrophysics Data System (ADS)

Zaini, S. R. Mohd; Rani, K. N. Abdul

2018-03-01

This project proposes the design of a wireless body area network (WBAN) microstrip patch antenna covered by the jeans fabric as the outer layer operating at the center frequency, fc of 2.40 GHz. Precisely, the microstrip patch antenna with the inset-fed edge technique is designed and simulated systematically by using the Keysight Advanced Design System (ADS) software where the FR4 board with the dielectric constant, ɛr of 4.70, dissipation factor or loss tangent, tan δ of 0.02 and height, h of 1.60 mm is the chosen dielectric substrate. The wearable microstrip patch antenna design is then fabricated using the FR4 printed circuit board (PCB) material, hidden inside the jeans fabric, and attached to clothing, such as a jacket accordingly. Simulation and fabrication measurement results show that the designed microstrip patch antenna characteristics can be applied significantly within the industrial, scientific, and medical (ISM) radio band, which is at fc = 2.40 GHz.

A Low Loss Microstrip Antenna for Radiometric Applications

NASA Technical Reports Server (NTRS)

Wahid, Parveen

2000-01-01

The design and analysis of a series-fed, low-loss, inverted microstrip array antenna, operating at 1.413 GHz is presented. The antenna is composed of two subarrays. Each subarray consists of an equal number of microstrip patches all connected together with microstrip lines. In the first design microstrip array for linear polarization is presented which incorporated a series feeding technique. The next design, which is capable of dual linear polarization (V-polarization and H-polarization), utilizes a corporate feed network for the V-pol and series feed arrangement for the H-pol. The first element of each subarray for H-pol is coaxially fed with a 180 deg phase difference. This approach ensures a symmetric radiation pattern on broadside in H-pol. For the V-pol two feeds are in the same phase on the two subarrays ensuring a broadside beam in V-pol. The designs presented here are simulated using the IE3D code that utilizes the method of moments. Measured results are compared with simulated results and show good agreement.

Beam test of CSES silicon strip detector module

NASA Astrophysics Data System (ADS)

Zhang, Da-Li; Lu, Hong; Wang, Huan-Yu; Li, Xin-Qiao; Xu, Yan-Bing; An, Zheng-Hua; Yu, Xiao-xia; Wang, Hui; Shi, Feng; Wang, Ping; Zhao, Xiao-Yun

2017-05-01

The silicon-strip tracker of the China Seismo-Electromagnetic Satellite (CSES) consists of two double-sided silicon strip detectors (DSSDs) which provide incident particle tracking information. A low-noise analog ASIC VA140 was used in this study for DSSD signal readout. A beam test on the DSSD module was performed at the Beijing Test Beam Facility of the Beijing Electron Positron Collider (BEPC) using a 400-800 MeV/c proton beam. The pedestal analysis results, RMSE noise, gain correction, and intensity distribution of incident particles of the DSSD module are presented. Supported by the XXX Civil Space Programme

Transient Signal Distortion and Coupling in Multilayer Multiconductor MIC Microstrips

DTIC Science & Technology

1990-05-22

cess.ar1 and identify by block number) I FIELD GROUP I $..)3-{; ’\\0-:: Transient signals, distortion, dispersion, microstrip J 1 i nes , multi...printed circuit design; complex microstrip structures {multiple lines and/or dielectric layers), coupling between lines, distortion of non -periodic...signals on complex structures, and a new method to control coupling on multilayer structures, as well as presenting numerical results for each of these

Microstrip-antenna design for hyperthermia treatment of superficial tumors.

PubMed

Montecchia, F

1992-06-01

Microstrip antennas have many different advantages over other RF/MW radiative applicators employed for superficial hyperthermia treatment. This is mainly due to their compact and body-conformable structure as well as to printed circuit board techniques, both of which allow a wide design flexibility for superficial tumor heating. Among the wide variety of radiator configurations, three microstrip antennas of increasing complexity with electromagnetic and heating characteristics potentially suitable as applicators for superficial hyperthermia have been designed, developed, and tested in different radiative conditions: a microstrip disk, a microstrip annular-slot, and a microstrip spiral. Electromagnetic design criteria are presented together with the determinations of the applicator return loss versus frequency and thermograms of the near-field heating pattern in muscle-like phantom. The results are in good agreement with theory and indicate that: i) the operating frequency is either single or multiple according to the applicator-mode, "resonant" or "traveling-wave," and can be chosen in the useful frequency range for hyperthermia (200-1000 MHz) according to the tumor cross-section and depth; ii) the heating pattern flexibility increases going from the simple geometry disk to the annular-slot and spiral applicators; iii) a distilled-water bolus is required; iv) the annular-slot applicator exhibits the highest efficiency, while the spiral applicator provides the best performance.

Design and development of conformal antenna composite structure

NASA Astrophysics Data System (ADS)

Xie, Zonghong; Zhao, Wei; Zhang, Peng; Li, Xiang

2017-09-01

In the manufacturing process of the common smart skin antenna, the adhesive covered on the radiating elements of the antenna led to severe deviation of the resonant frequency, which degraded the electromagnetic performance of the antenna. In this paper, a new component called package cover was adopted to prevent the adhesive from covering on the radiating elements of the microstrip antenna array. The package cover and the microstrip antenna array were bonded together as packaged antenna which was then embedded into the composite sandwich structure to develop a new structure called conformal antenna composite structure (CACS). The geometric parameters of the microstrip antenna array and the CACS were optimized by the commercial software CST microwave studio. According to the optimal results, the microstrip antenna array and the CACS were manufactured and tested. The experimental and numerical results of electromagnetic performance showed that the resonant frequency of the CACS was close to that of the microstrip antenna array (with error less than 1%) and the CACS had a higher gain (about 2 dB) than the microstrip antenna array. The package system would increase the electromagnetic radiating energy at the design frequency nearly 66%. The numerical model generated by CST microwave studio in this study could successfully predict the electromagnetic performance of the microstrip antenna array and the CACS with relatively good accuracy. The mechanical analysis results showed that the CACS had better flexural property than the composite sandwich structure without the embedment of packaged antenna. The comparison of the electromagnetic performance for the CACS and the MECSSA showed that the package system was useful and effective.

The Status and Outlook for the Photovoltaics Industry

NASA Astrophysics Data System (ADS)

Carlson, David

2006-03-01

The first silicon solar cell was made at Bell Labs in 1954, and over the following decades, shipments of photovoltaic (PV) modules increased at a rate of about 18% annually. In the last several years, the annual growth rate has increased to ˜ 35% due largely to government-supported programs in Japan and Germany. Silicon technology has dominated the PV industry since its inception, and in 2005 about 65% of all solar cells were made from polycrystalline (or multicrystalline) silicon, 24% from monocrystalline silicon and ˜ 4% from ribbon silicon. While conversion efficiencies as high as 24.7% have been obtained in the laboratory for silicon solar cells, the best efficiencies for commercial PV modules are in the range of 17 18% (the efficiency limit for a silicon solar cell is ˜ 29%). A number of companies are commercializing solar cells based on other materials such as amorphous silicon, microcrystalline silicon, cadmium telluride, copper-indium-gallium-diselenide (CIGS), gallium arsenide (and related compounds) and dye- sensitized titanium oxide. Thin film CIGS solar cells have been fabricated with conversion efficiencies as high as 19.5% while efficiencies as high as 39% have been demonstrated for a GaInP/Ga(In)As/Ge triple-junction cell operating at a concentration of 236 suns. Thin film solar cells are being used in consumer products and in some building-integrated applications, while PV concentrator systems are being tested in grid-connected arrays located in high solar insolation areas. Nonetheless, crystalline silicon PV technology is likely to dominate the terrestrial market for at least the next decade with module efficiencies > 20% and module prices of < 1/Wp expected by 2020, which in turn should allow significant penetration of the utility grid market. However, crystalline silicon solar cells may be challenged in the next decade or two by new low-cost, high performance devices based on organic materials and nanotechnology.

LCoS-SLM technology based on Digital Electro-optics Platform and using in dynamic optics for application development

NASA Astrophysics Data System (ADS)

Tsai, Chun-Wei; Wang, Chen; Lyu, Bo-Han; Chu, Chen-Hsien

2017-08-01

Digital Electro-optics Platform is the main concept of Jasper Display Corp. (JDC) to develop various applications. These applications are based on our X-on-Silicon technologies, for example, X-on-Silicon technologies could be used on Liquid Crystal on Silicon (LCoS), Micro Light-Emitting Diode on Silicon (μLEDoS), Organic Light-Emitting Diode on Silicon (OLEDoS), and Cell on Silicon (CELLoS), etc. LCoS technology is applied to Spatial Light Modulator (SLM), Dynamic Optics, Wavelength Selective Switch (WSS), Holographic Display, Microscopy, Bio-tech, 3D Printing and Adaptive Optics, etc. In addition, μLEDoS technology is applied to Augmented Reality (AR), Head Up Display (HUD), Head-mounted Display (HMD), and Wearable Devices. Liquid Crystal on Silicon - Spatial Light Modulator (LCoSSLM) based on JDC's On-Silicon technology for both amplitude and phase modulation, have an expanding role in several optical areas where light control on a pixel-by-pixel basis is critical for optimum system performance. Combination of the advantage of hardware and software, we can establish a "dynamic optics" for the above applications or more. Moreover, through the software operation, we can control the light more flexible and easily as programmable light processor.

Graphene-silicon phase modulators with gigahertz bandwidth

NASA Astrophysics Data System (ADS)

Sorianello, V.; Midrio, M.; Contestabile, G.; Asselberghs, I.; Van Campenhout, J.; Huyghebaert, C.; Goykhman, I.; Ott, A. K.; Ferrari, A. C.; Romagnoli, M.

2018-01-01

The modulator is a key component in optical communications. Several graphene-based amplitude modulators have been reported based on electro-absorption. However, graphene phase modulators (GPMs) are necessary for functions such as applying complex modulation formats or making switches or phased arrays. Here, we present a 10 Gb s-1 GPM integrated in a Mach-Zehnder interferometer configuration. This is a compact device based on a graphene-insulator-silicon capacitor, with a phase-shifter length of 300 μm and extinction ratio of 35 dB. The GPM has a modulation efficiency of 0.28 V cm at 1,550 nm. It has 5 GHz electro-optical bandwidth and operates at 10 Gb s-1 with 2 V peak-to-peak driving voltage in a push-pull configuration for binary transmission of a non-return-to-zero data stream over 50 km of single-mode fibre. This device is the key building block for graphene-based integrated photonics, enabling compact and energy-efficient hybrid graphene-silicon modulators for telecom, datacom and other applications.

Long-term stability of amorphous-silicon modules

NASA Technical Reports Server (NTRS)

Ross, R. G., Jr.

1986-01-01

The Jet Propulsion Laboratory (JPL) program of developing qualification tests necessary for amorphous silicon modules, including appropriate accelerated environmental tests reveal degradation due to illumination. Data were given which showed the results of temperature-controlled field tests and accelerated tests in an environmental chamber.

The effect of different module configurations on the radiation tolerance of multijunction solar cells

NASA Technical Reports Server (NTRS)

Gee, James M.; Curtis, Henry B.

1988-01-01

The effect of different module configurations on the performance of multijunction (MJ) solar cells in a radiation environment was investigated. Module configuration refers to the electrical circuit in which the subcells of the multijunction cell are wired. Experimental data for AlCaAs, GaAs, InGaAs, and silicon single-junction concentrator cells subjected to 1 MeV electron irradiation was used to calculate the expected performance of AlGaAs/InGaAs, AlGa/silicon, GaAs/InGaAs, and GaAs/silicon Mj concentrator cells. These calculations included independent, series, and voltage-matched configurations. The module configuration was found to have a significant impact on the radiation tolerance characteristic of the MJ cells.

Ultra-low-power carrier-depletion Mach-Zehnder silicon optical modulator.

PubMed

Ding, Jianfeng; Chen, Hongtao; Yang, Lin; Zhang, Lei; Ji, Ruiqiang; Tian, Yonghui; Zhu, Weiwei; Lu, Yangyang; Zhou, Ping; Min, Rui; Yu, Mingbin

2012-03-26

We demonstrate a 26 Gbit/s Mach-Zehnder silicon optical modulator. The doping concentration and profile are optimized, and a modulation efficiency with the figure of merit (VπL) of 1.28 V·cm is achieved. We design an 80-nm-wide intrinsic silicon gap between the p-type and n-type doped regions to reduce the capacitance of the diode and prevent the diode from working in a slow diffusion mode. Therefore, the modulator can be driven with a small differential voltage of 0.5 V with no bias. Without the elimination of the dissipated power of the series resistors and the reflected power of the electrical signal, the maximum power consumption is 3.8 mW.

Correlation between surface carbon concentration and adhesive strength at the Si cell/EVA interface in a PV module

DOE Office of Scientific and Technical Information (OSTI.GOV)

Dhere, N.G.; Wollam, M.E.; Gadre, K.S.

1997-12-31

Silicon solar cell/EVA composite is being studied with an objective to further improve the manufacturing technology of PV modules. Sample extraction and adhesion strength measurement process has been modified. Silicon and EVA samples were extracted from solar cells of new and field-deployed modules. Optical microscopy, SEM, and AES of samples from new modules revealed EVA islands covering most of the silicon cell surface indicating a cohesive failure. A good correlation was observed between the adhesive strength and surface concentration of carbon. A low carbon concentration which indicated less EVA clinging to cell surface always resulted in low adhesive strengths. Themore » correlation provides a simple technique for inferring properties of EVA.« less

PAMELA: A Satellite Experiment for Antiparticles Measurement in Cosmic Rays

NASA Astrophysics Data System (ADS)

Bongi, M.; Adriani, O.; Ambriola, M.; Bakaldin, A.; Barbarino, G. C.; Basili, A.; Bazilevskaja, G.; Bellotti, R.; Bencardino, R.; Boezio, M.; Bogomolov, E. A.; Bonechi, L.; Bongiorno, L.; Bonvicini, V.; Boscherini, M.; Cafagna, F. S.; Campana, D.; Carlson, P.; Casolino, M.; Castellini, G.; Circella, M.; De Marzo, C. N.; De Pascale, M. P.; Furano, G.; Galper, A. M.; Giglietto, N.; Grigorjeva, A.; Koldashov, S. V.; Korotkov, M. G.; Krut'kov, S. Y.; Lund, J.; Lundquist, J.; Menicucci, A.; Menn, W.; Mikhailov, V. V.; Minori, M.; Mirizzi, N.; Mitchell, J. W.; Mocchiutti, E.; Morselli, A.; Mukhametshin, R.; Orsi, S.; Osteria, G.; Papini, P.; Pearce, M.; Picozza, P.; Ricci, M.; Ricciarini, S. B.; Romita, M.; Rossi, G.; Russo, S.; Schiavon, P.; Simon, M.; Sparvoli, R.; Spillantini, P.; Spinelli, P.; Stochaj, S. J.; Stozhkov, Y.; Straulino, S.; Streitmatter, R. E.; Taccetti, F.; Vacchi, A.; Vannuccini, E.; Vasilyev, G. I.; Voronov, S. A.; Wischnewski, R.; Yurkin, Y.; Zampa, G.; Zampa, N.

2004-06-01

PAMELA is a satellite-borne experiment that will study the antiproton and positron fluxes in cosmic rays in a wide range of energy (from 80 MeV up to 190 GeV for antiprotons and from 50 MeV up to 270 GeV for positrons) and with high statistics, and that will measure the antihelium/helium ratio with a sensitivity of the order of 10/sup -8/. The detector will fly on-board a polar orbiting Resurs DK1 satellite, which will be launched into space by a Soyuz rocket in 2004 from Baikonur cosmodrome in Kazakhstan, for a 3-year-long mission. Particle identification and energy measurements are performed in the PAMELA apparatus using the following subdetectors: a magnetic spectrometer made up of a permanent magnet equipped with double-sided microstrip silicon detectors, an electromagnetic imaging calorimeter composed of layers of tungsten absorber and silicon detectors planes, a transition radiation detector made of straw tubes interleaved with carbon fiber radiators, a plastic scintillator time-of-flight and trigger system, a set of anticounter plastic scintillator detectors, and a neutron detector. The features of the detectors and the main results obtained in beam test sessions are presented.

Back-end and interface implementation of the STS-XYTER2 prototype ASIC for the CBM experiment

NASA Astrophysics Data System (ADS)

Kasinski, K.; Szczygiel, R.; Zabolotny, W.

2016-11-01

Each front-end readout ASIC for the High-Energy Physics experiments requires robust and effective hit data streaming and control mechanism. A new STS-XYTER2 full-size prototype chip for the Silicon Tracking System and Muon Chamber detectors in the Compressed Baryonic Matter experiment at Facility for Antiproton and Ion Research (FAIR, Germany) is a 128-channel time and amplitude measuring solution for silicon microstrip and gas detectors. It operates at 250 kHit/s/channel hit rate, each hit producing 27 bits of information (5-bit amplitude, 14-bit timestamp, position and diagnostics data). The chip back-end implements fast front-end channel read-out, timestamp-wise hit sorting, and data streaming via a scalable interface implementing the dedicated protocol (STS-HCTSP) for chip control and hit transfer with data bandwidth from 9.7 MHit/s up to 47 MHit/s. It also includes multiple options for link diagnostics, failure detection, and throttling features. The back-end is designed to operate with the data acquisition architecture based on the CERN GBTx transceivers. This paper presents the details of the back-end and interface design and its implementation in the UMC 180 nm CMOS process.

A hybrid life-cycle inventory for multi-crystalline silicon PV module manufacturing in China

NASA Astrophysics Data System (ADS)

Yao, Yuan; Chang, Yuan; Masanet, Eric

2014-11-01

China is the world’s largest manufacturer of multi-crystalline silicon photovoltaic (mc-Si PV) modules, which is a key enabling technology in the global transition to renewable electric power systems. This study presents a hybrid life-cycle inventory (LCI) of Chinese mc-Si PV modules, which fills a critical knowledge gap on the environmental implications of mc-Si PV module manufacturing in China. The hybrid LCI approach combines process-based LCI data for module and poly-silicon manufacturing plants with a 2007 China IO-LCI model for production of raw material and fuel inputs to estimate ‘cradle to gate’ primary energy use, water consumption, and major air pollutant emissions (carbon dioxide, methane, sulfur dioxide, nitrous oxide, and nitrogen oxides). Results suggest that mc-Si PV modules from China may come with higher environmental burdens that one might estimate if one were using LCI results for mc-Si PV modules manufactured elsewhere. These higher burdens can be reasonably explained by the efficiency differences in China’s poly-silicon manufacturing processes, the country’s dependence on highly polluting coal-fired electricity, and the expanded system boundaries associated with the hybrid LCI modeling framework. The results should be useful for establishing more conservative ranges on the potential ‘cradle to gate’ impacts of mc-Si PV module manufacturing for more robust LCAs of PV deployment scenarios.

Full wave characterization of microstrip open end discontinuities patterned on anisotropic substrates using potential theory

NASA Technical Reports Server (NTRS)

Toncich, S. S.; Collin, R. E.; Bhasin, K. B.

1993-01-01

A technique for a full wave characterization of microstrip open end discontinuities fabricated on uniaxial anisotropic substrates using potential theory is presented. The substrate to be analyzed is enclosed in a cutoff waveguide, with the anisotropic axis aligned perpendicular to the air-dielectric interface. A full description of the sources on the microstrip line is included with edge conditions built in. Extention to other discontinuities is discussed.

Impedance properties of circular microstrip antenna

NASA Technical Reports Server (NTRS)

Deshpande, M. D.; Bailey, M. C.

1983-01-01

A moment method solution to the input impedance of a circular microstrip antenna excited by either a microstrip feed or a coaxial probe is presented. Using the exact dyadic Green's function and the Fourier transform the problem is formulated in terms of Richmond's reaction integral equation from which the unknown patch current can be solved for. The patch current is expanded in terms of regular surface patch modes and an attachment mode (for probe excited case) which insures continuity of the current at probe/patch junction, proper polarization and p-dependance of patch current in the vicinity of the probe. The input impedance of a circular microstrip antenna is computed and compared with earlier results. Effect of attachment mode on the input impedance is also discussed.

Wireless OAM transmission system based on elliptical microstrip patch antenna.

PubMed

Chen, Jia Jia; Lu, Qian Nan; Dong, Fei Fei; Yang, Jing Jing; Huang, Ming

2016-05-30

The multiplexing transmission has always been a focus of attention for communication technology. In this paper, the radiation characteristics of circular microstrip patch antenna was firstly analyzed based on cavity model theory, and then spiral beams carrying orbital angular momentum (OAM) were generated, using elliptical microstrip patch antenna, with a single feed probe instead of a standard circular patch with two feedpoints. Moreover, by combining the proposed elliptic microstrip patch antenna with Universal Software Radio Peripheral (USRP), a wireless OAM transmission system was established and the real-time transmission of text, image and video in a real channel environment was realized. Since the wireless OAM transmission has the advantage of good safety and high spectrum utilization efficiency, this work has theoretical significance and potential application.

Experimental Verification of the Use of Metal Filled Via Hole Fences for Crosstalk Control of Microstrip Lines in LTCC Packages

NASA Technical Reports Server (NTRS)

Ponchak, George E.; Chun, Donghoon; Yook, Jong-Gwan; Katehi, Linda P. B.

2001-01-01

Coupling between microstrip lines in dense RF packages is a common problem that degrades circuit performance. Prior three-dimensional-finite element method (3-D-FEM) electromagnetic simulations have shown that metal filled via hole fences between two adjacent microstrip lines actually Increases coupling between the lines: however, if the top of the via posts are connected by a metal strip, coupling is reduced. In this paper, experimental verification of the 3-D-FEM simulations is demonstrated for commercially fabricated low temperature cofired ceramic (LTCC) packages. In addition, measured attenuation of microstrip lines surrounded by the shielding structures is presented and shows that shielding structures do not change the attenuation characteristics of the line.

Environmental testing of block 2 solar cell modules

NASA Technical Reports Server (NTRS)

Griffith, J. S.

1979-01-01

The testing procedures and results of samples of the LSA Project Block 2 procurement of silicon solar cell modules are described. Block 2 was the second large scale procurement of silicon solar cell modules made by the JPL Low-cost Solar Array Project with deliveries in 1977 and early 1978. The results showed that the Block 2 modules were greatly improved over Block 1 modules. In several cases it was shown that design improvements were needed to reduce environmental test degradation. These improvements were incorporated during this production run.

Experimental comparison of direct detection Nyquist SSB transmission based on silicon dual-drive and IQ Mach-Zehnder modulators with electrical packaging.

PubMed

Ruan, Xiaoke; Li, Ke; Thomson, David J; Lacava, Cosimo; Meng, Fanfan; Demirtzioglou, Iosif; Petropoulos, Periklis; Zhu, Yixiao; Reed, Graham T; Zhang, Fan

2017-08-07

We have designed and fabricated a silicon photonic in-phase-quadrature (IQ) modulator based on a nested dual-drive Mach-Zehnder structure incorporating electrical packaging. We have assessed its use for generating Nyquist-shaped single sideband (SSB) signals by operating it either as an IQ Mach-Zehnder modulator (IQ-MZM) or using just a single branch of the dual-drive Mach-Zehnder modulator (DD-MZM). The impact of electrical packaging on the modulator bandwidth is also analyzed. We demonstrate 40 Gb/s (10Gbaud) 16-ary quadrature amplitude modulation (16-QAM) Nyquist-shaped SSB transmission over 160 km standard single mode fiber (SSMF). Without using any chromatic dispersion compensation, the bit error rates (BERs) of 5.4 × 10 -4 and 9.0 × 10 -5 were measured for the DD-MZM and IQ-MZM, respectively, far below the 7% hard-decision forward error correction threshold. The performance difference between IQ-MZM and DD-MZM is most likely due to the non-ideal electrical packaging. Our work is the first experimental comparison between silicon IQ-MZM and silicon DD-MZM in generating SSB signals. We also demonstrate 50 Gb/s (12.5Gbaud) 16-QAM Nyquist-shaped SSB transmission over 320 km SSMF with a BER of 2.7 × 10 -3 . Both the silicon IQ-MZM and the DD-MZM show potential for optical transmission at metro scale and for data center interconnection.

R&D issues in scale-up and manufacturing of amorphous silicon tandem modules

NASA Astrophysics Data System (ADS)

Arya, R. R.; Carlson, D. E.; Chen, L. F.; Ganguly, G.; He, M.; Lin, G.; Middya, R.; Wood, G.; Newton, J.; Bennett, M.; Jackson, F.; Willing, F.

1999-03-01

R & D on amorphous silicon based tandem junction devices has improved the throughtput, the material utilization, and the performance of devices on commercial tin oxide coated glass. The tandem junction technology has been scaled-up to produce 8.6 Ft2 monolithically integrated modules in manufacturing at the TF1 plant. Optimization of performance and stability of these modules is ongoing.

Hybrid Silicon Photonic Integration using Quantum Well Intermixing

NASA Astrophysics Data System (ADS)

Jain, Siddharth R.

With the push for faster data transfer across all domains of telecommunication, optical interconnects are transitioning into shorter range applications such as in data centers and personal computing. Silicon photonics, with its economic advantages of leveraging well-established silicon manufacturing facilities, is considered the most promising approach to further scale down the cost and size of optical interconnects for chip-to-chip communication. Intrinsic properties of silicon however limit its ability to generate and modulate light, both of which are key to realizing on-chip optical data transfer. The hybrid silicon approach directly addresses this problem by using molecularly bonded III-V epitaxial layers on silicon for optical gain and absorption. This technology includes direct transfer of III-V wafer to a pre-patterned silicon-on-insulator wafer. Several discrete devices for light generation, modulation, amplification and detection have already been demonstrated on this platform. As in the case of electronics, multiple photonic elements can be integrated on a single chip to improve performance and functionality. However, scalable photonic integration requires the ability to control the bandgap for individual devices along with design changes to simplify fabrication. In the research presented here, quantum well intermixing is used as a technique to define multiple bandgaps for integration on the hybrid silicon platform. Implantation enhanced disordering is used to generate four bandgaps spread over 120+ nm. By combining these selectively intermixed III-V layers with pre-defined gratings and waveguides on silicon, we fabricate distributed feedback, distributed Bragg reflector, Fabry-Perot and mode-locked lasers along with photodetectors, electro-absorption modulators and other test structures, all on a single chip. We demonstrate a broadband laser source with continuous-wave operational lasers over a 200 nm bandwidth. Some of these lasers are integrated with modulators with a 3-dB bandwidth above 25 GHz, thus demonstrating coarse wavelength division multiplexing transmitter on silicon.

The effect of material matching on the stress-induced power degradation for light-redirecting-ribbon-based silicon photovoltaic modules

NASA Astrophysics Data System (ADS)

Gou, X. F.; Zhuang, H.; Zhu, J.; Li, X. Y.

2018-01-01

Light redirecting ribbons (LRR) have recently been adopted in crystalline silicon modules in PV industry. The introduction of this LRR may bring additional stress at the boundary of the busbar/wafer contact, which may probably lead to higher power loss after aging. The thermal cycle and electroluminescence (EL) test are employed in this work to investigate this stress-induced power degradation for LRR-based crystalline silicon modules. The obtained results demonstrate that with increase in the thickness of the EVA encapsulant or the decrease in the thickness of the LRR, the power degradation induced by stress can be effectively diminished.

Performance of a Low-Cost, Low-Concentration Photovoltaic Module

NASA Astrophysics Data System (ADS)

Shell, Kara A.; Brown, Scott A.; Schuetz, Mark A.; Davis, Bob J.; French, Roger H.

2011-12-01

In order to significantly reduce the cost of solar power, Replex Plastics has developed a low-cost, low-concentration PV module incorporating acrylic mirror reflectors. The reflectors are compound parabolic concentrators designed for use with low-accuracy single axis trackers. The prototypes use crystalline silicon photovoltaic cells and achieved 7.1x concentration over a receiver without reflectors. The 1×1.6 m module used 1/10th the silicon of a standard module and produced a max power of 140 W.

A L-Band Superstrate Lens Enhanced Antenna and Array for Tactical Operations

DTIC Science & Technology

2013-07-01

unlimited 13. SUPPLEMENTARY NOTES 14. ABSTRACT The design of a 1.2 GHz microstrip antenna utilizing a superstrate layer for gain enhancement is...CA, 92152-5001 sam.chieh@navy.mil Abstract—The design of a 1.2 GHz microstrip antenna utilizing a superstrate layer for gain enhancement is...realized. The microstrip patch antenna is a widely used antenna in this regime as it is light weight and is easily scalable for increased gains. It has

Silicon dendritic web material

NASA Technical Reports Server (NTRS)

Meier, D. L.; Campbell, R. B.; Sienkiewicz, L. J.; Rai-Choudhury, P.

1982-01-01

The development of a low cost and reliable contact system for solar cells and the fabrication of several solar cell modules using ultrasonic bonding for the interconnection of cells and ethylene vinyl acetate as the potting material for module encapsulation are examined. The cells in the modules were made from dendritic web silicon. To reduce cost, the electroplated layer of silver was replaced with an electroplated layer of copper. The modules that were fabricated used the evaporated Ti, Pd, Ag and electroplated Cu (TiPdAg/Cu) system. Adherence of Ni to Si is improved if a nickel silicide can be formed by heat treatment. The effectiveness of Ni as a diffusion barrier to Cu and the ease with which nickel silicide is formed is discussed. The fabrication of three modules using dendritic web silicon and employing ultrasonic bonding for interconnecting calls and ethylene vinyl acetate as the potting material is examined.

Silicon dendritic web material

NASA Astrophysics Data System (ADS)

Meier, D. L.; Campbell, R. B.; Sienkiewicz, L. J.; Rai-Choudhury, P.

1982-03-01

The development of a low cost and reliable contact system for solar cells and the fabrication of several solar cell modules using ultrasonic bonding for the interconnection of cells and ethylene vinyl acetate as the potting material for module encapsulation are examined. The cells in the modules were made from dendritic web silicon. To reduce cost, the electroplated layer of silver was replaced with an electroplated layer of copper. The modules that were fabricated used the evaporated Ti, Pd, Ag and electroplated Cu (TiPdAg/Cu) system. Adherence of Ni to Si is improved if a nickel silicide can be formed by heat treatment. The effectiveness of Ni as a diffusion barrier to Cu and the ease with which nickel silicide is formed is discussed. The fabrication of three modules using dendritic web silicon and employing ultrasonic bonding for interconnecting calls and ethylene vinyl acetate as the potting material is examined.

18th Workshop on Crystalline Silicon Solar Cells and Modules: Materials and Processes; Workshop Proceedings, 3-6 August 2008, Vail, Colorado

DOE Office of Scientific and Technical Information (OSTI.GOV)

Sopori, B. L.

2008-09-01

The National Center for Photovoltaics sponsored the 18th Workshop on Crystalline Silicon Solar Cells & Modules: Materials and Processes, held in Vail, CO, August 3-6, 2008. This meeting provided a forum for an informal exchange of technical and scientific information between international researchers in the photovoltaic and relevant non-photovoltaic fields. The theme of this year's meeting was 'New Directions for Rapidly Growing Silicon Technologies.'

Automated assembly of Gallium Arsenide and 50-micron thick silicon solar cell modules

NASA Technical Reports Server (NTRS)

Mesch, H. G.

1984-01-01

The TRW automated solar array assembly equipment was used for the module assembly of 300 GaAs solar cells and 300 50 micron thick silicon solar cells (2 x 4 cm in size). These cells were interconnected with silver plated Invar tabs by means of welding. The GaAs cells were bonded to Kapton graphite aluminum honeycomb graphite substrates and the thin silicon cells were bonded to 0.002 inch thick single layer Kapton substrates. The GaAs solar cell module assembly resulted in a yield of 86% and the thin cell assembly produced a yield of 46% due to intermittent sticking of weld electrodes during the front cell contact welding operation. (Previously assembled thin cell solar modules produced an overall assembly yield of greater than 80%).

Potential of thin-film solar cell module technology

NASA Technical Reports Server (NTRS)

Shimada, K.; Ferber, R. R.; Costogue, E. N.

1985-01-01

During the past five years, thin-film cell technology has made remarkable progress as a potential alternative to crystalline silicon cell technology. The efficiency of a single-junction thin-film cell, which is the most promising for use in flat-plate modules, is now in the range of 11 percent with 1-sq cm cells consisting of amorphous silicon, CuInSe2 or CdTe materials. Cell efficiencies higher than 18 percent, suitable for 15 percent-efficient flat plate modules, would require a multijunction configuration such as the CdTe/CuInSe2 and tandem amorphous-silicon (a-Si) alloy cells. Assessments are presented of the technology status of thin-film-cell module research and the potential of achieving the higher efficiencies required for large-scale penetration into the photovoltaic (PV) energy market.

A Cryogenic Waveguide Mount for Microstrip Circuit and Material Characterization

NASA Technical Reports Server (NTRS)

U-yen, Kongpop; Brown, Ari D.; Moseley, Samuel H.; Noroozian, Omid; Wollack, Edward J.

2016-01-01

A waveguide split-block fixture used in the characterization of thin-film superconducting planar circuitry at millimeter wavelengths is described in detail. The test fixture is realized from a pair of mode converters, which transition from rectangular-waveguide to on-chip microstrip-line signal propagation via a stepped ridge-guide impedance transformer. The observed performance of the W-band package at 4.2K has a maximum in-band transmission ripple of 2dB between 1.53 and 1.89 times the waveguide cutoff frequency. This metrology approach enables the characterization of superconducting microstrip test structures as a function temperature and frequency. The limitations of the method are discussed and representative data for superconducting Nb and NbTiN thin film microstrip resonators on single-crystal Si dielectric substrates are presented.

The reliability and stability of multijunction amorphous silicon PV modules

DOE Office of Scientific and Technical Information (OSTI.GOV)

Carlson, D.E.

1995-11-01

Solarex is developing a manufacturing process for the commercial production of 8 ft{sup 2} multijunction amorphous silicon (a-Si) PV modules starting in 1996. The device structure used in these multijunction modules is: glass/textured tin oxide/p-i-n/p-i-n/ZnO/Al/EVA/Tedlar where the back junction of the tandem structure contains an amorphous silicon germanium alloy. As an interim step, 4 ft{sup 2} multijunction modules have been fabricated in a pilot production mode over the last several months. The distribution of initial conversion efficiencies for an engineering run of 67 modules (4 ft{sup 2}) is shown. Measurements recently performed at NREL indicate that the actual efficiencies aremore » about 5% higher than those shown, and thus exhibit an average initial conversion efficiency of about 9.5%. The data indicates that the process is relatively robust since there were no modules with initial efficiencies less than 7.5%.« less

Wideband bandpass filters employing broadside-coupled microstrip lines for MIC and MMIC applications

NASA Technical Reports Server (NTRS)

Tran, M.; Nguyen, C.

1994-01-01

Wideband bandpass filters employing half-wavelength broadside-coupled microstrip lines suitable for microwave and mm-wave integrated monolithic integrated circuits (MIC and MMIC) are presented. Several filters have been developed at X-band (8 to 12 GHz) with 1 dB insertion loss. Fair agreement between the measured and calculated results has been observed. The analysis of the broadside-coupled microstrip lines used in the filters, based on the quasi-static spectral domain technique, is also described.

A microstrip array feed for MSAT spacecraft reflector antenna

NASA Technical Reports Server (NTRS)

Huang, John

1988-01-01

An L-band circularly polarized microstrip array antenna with relatively wide bandwidth has been developed. The array has seven subarrays which form a single cluster as part of a large overlapping cluster reflector feed array. Each of the seven subarrays consists of four uniquely arranged linearly polarized microstrip elements. A 7.5 percent impedance (VSWR less than 1.5) as well as axial ratio (less than 1 dB) bandwidths have been achieved by employing a relatively thick honeycomb substrate with special impedance matching feed probes.

Design aspects and comparison between high Tc superconducting coplanar waveguide and microstrip line

NASA Technical Reports Server (NTRS)

Kong, K. S.; Bhasin, K. B.; Itoh, T.

1991-01-01

The high T sub c superconducting microstrip line and coplanar waveguide are compared in terms of the loss characteristics and the design aspects. The quality factor Q values for each structure are compared in respect to the same characteristic impedance with the comparable dimensions of the center conductor of the coplanar waveguide and the strip of the microstrip line. Also, the advantages and disadvantages for each structure are discussed in respect to passive microwave circuit applications.

Design of miniature type parallel coupled microstrip hairpin filter in UHF range

NASA Astrophysics Data System (ADS)

Hasan, Adib Belhaj; Rahman, Maj Tarikur; Kahhar, Azizul; Trina, Tasnim; Saha, Pran Kanai

2017-12-01

A microstrip parallel coupled line bandpass filter is designed in UHF range and the filter size is reduced by microstrip hairpin structure. The FR4 substrate is used as base material of the filter. The filter is analyzed by both ADS and CST design studio in the frequency range of 500 MHz to 650 MHz. The Bandwidth is found 13.27% with a center frequency 570 MHz. Simulation from both ADS and CST shows a very good agreement of performance of the filter.

Spectrum sensitivity, energy yield, and revenue prediction of PV and CPV modules

DOE Office of Scientific and Technical Information (OSTI.GOV)

Kinsey, Geoffrey S., E-mail: Geoffrey.kinsey@ee.doe.gov

2015-09-28

Impact on module performance of spectral irradiance variation has been determined for III-V multijunctions compared against the four most common flat-plate module types (cadmium telluride, multicrystalline silicon, copper indium gallium selenide, and monocrystalline silicon. Hour-by-hour representative spectra were generated using atmospheric variables for Albuquerque, New Mexico, USA. Convolution with published values for external quantum efficiency gave the predicted current output. When combined with specifications of commercial PV modules, energy yield and revenue were predicted. This approach provides a means for optimizing PV module design based on various site-specific temporal variables.

Spectrum sensitivity, energy yield, and revenue prediction of PV and CPV modules

NASA Astrophysics Data System (ADS)

Kinsey, Geoffrey S.

2015-09-01

Impact on module performance of spectral irradiance variation has been determined for III-V multijunctions compared against the four most common flat-plate module types (cadmium telluride, multicrystalline silicon, copper indium gallium selenide, and monocrystalline silicon. Hour-by-hour representative spectra were generated using atmospheric variables for Albuquerque, New Mexico, USA. Convolution with published values for external quantum efficiency gave the predicted current output. When combined with specifications of commercial PV modules, energy yield and revenue were predicted. This approach provides a means for optimizing PV module design based on various site-specific temporal variables.

Design of microstrip components by computer

NASA Technical Reports Server (NTRS)

Cisco, T. C.

1972-01-01

Development of computer programs for component analysis and design aids used in production of microstrip components is discussed. System includes designs for couplers, filters, circulators, transformers, power splitters, diode switches, and attenuators.

Optical modulation techniques for analog signal processing and CMOS compatible electro-optic modulation

NASA Astrophysics Data System (ADS)

Gill, Douglas M.; Rasras, Mahmoud; Tu, Kun-Yii; Chen, Young-Kai; White, Alice E.; Patel, Sanjay S.; Carothers, Daniel; Pomerene, Andrew; Kamocsai, Robert; Beattie, James; Kopa, Anthony; Apsel, Alyssa; Beals, Mark; Mitchel, Jurgen; Liu, Jifeng; Kimerling, Lionel C.

2008-02-01

Integrating electronic and photonic functions onto a single silicon-based chip using techniques compatible with mass-production CMOS electronics will enable new design paradigms for existing system architectures and open new opportunities for electro-optic applications with the potential to dramatically change the management, cost, footprint, weight, and power consumption of today's communication systems. While broadband analog system applications represent a smaller volume market than that for digital data transmission, there are significant deployments of analog electro-optic systems for commercial and military applications. Broadband linear modulation is a critical building block in optical analog signal processing and also could have significant applications in digital communication systems. Recently, broadband electro-optic modulators on a silicon platform have been demonstrated based on the plasma dispersion effect. The use of the plasma dispersion effect within a CMOS compatible waveguide creates new challenges and opportunities for analog signal processing since the index and propagation loss change within the waveguide during modulation. We will review the current status of silicon-based electrooptic modulators and also linearization techniques for optical modulation.

Silicon single mode waveguide modulator based upon switchable Bragg reflector

NASA Astrophysics Data System (ADS)

Azogui, Jonathan; Ramon, Yonathan; Businaro, Luca; Ciasca, Gabriele; Gerardino, Annamaria; Zalevsky, Zeev

2018-02-01

In this paper we present the development of an electro optical "Bragg" modulator for telecommunication, in both design and fabrication. The device consists from a regular single mode silicon waveguide (WG) in which an effective Bragg reflector is "turned on" within the WG by means of external bias, due to the plasma dispersion effect, in which the (complexed) refractive index is affected by carrier concentration within the Silicon. Three different strategies are presented for both design and fabrication.

Optical modulation in silicon-vanadium dioxide photonic structures

NASA Astrophysics Data System (ADS)

Miller, Kevin J.; Hallman, Kent A.; Haglund, Richard F.; Weiss, Sharon M.

2017-08-01

All-optical modulators are likely to play an important role in future chip-scale information processing systems. In this work, through simulations, we investigate the potential of a recently reported vanadium dioxide (VO2) embedded silicon waveguide structure for ultrafast all-optical signal modulation. With a VO2 length of only 200 nm, finite-differencetime- domain simulations suggest broadband (200 nm) operation with a modulation greater than 12 dB and an insertion loss of less than 3 dB. Predicted performance metrics, including modulation speed, modulation depth, optical bandwidth, insertion loss, device footprint, and energy consumption of the proposed Si-VO2 all-optical modulator are benchmarked against those of current state-of-the-art all-optical modulators with in-plane optical excitation.

SiD Linear Collider Detector R&D, DOE Final Report

DOE Office of Scientific and Technical Information (OSTI.GOV)

Brau, James E.; Demarteau, Marcel

2015-05-15

The Department of Energy’s Office of High Energy Physics supported the SiD university detector R&D projects in FY10, FY11, and FY12 with no-cost extensions through February, 2015. The R&D projects were designed to advance the SiD capabilities to address the fundamental questions of particle physics at the International Linear Collider (ILC): • What is the mechanism responsible for electroweak symmetry breaking and the generation of mass? • How do the forces unify? • Does the structure of space-time at small distances show evidence for extra dimensions? • What are the connections between the fundamental particles and forces and cosmology? Siliconmore » detectors are used extensively in SiD and are well-matched to the challenges presented by ILC physics and the ILC machine environment. They are fast, robust against machine-induced background, and capable of very fine segmentation. SiD is based on silicon tracking and silicon-tungsten sampling calorimetry, complemented by powerful pixel vertex detection, and outer hadronic calorimetry and muon detection. Radiation hard forward detectors which can be read out pulse by pulse are required. Advanced calorimetry based on a particle flow algorithm (PFA) provides excellent jet energy resolution. The 5 Tesla solenoid is outside the calorimeter to improve energy resolution. PFA calorimetry requires fine granularity for both electromagnetic and hadronic calorimeters, leading naturally to finely segmented silicon-tungsten electromagnetic calorimetry. Since silicon-tungsten calorimetry is expensive, the detector architecture is compact. Precise tracking is achieved with the large magnetic field and high precision silicon microstrips. An ancillary benefit of the large magnetic field is better control of the e⁺e⁻ pair backgrounds, permitting a smaller radius beampipe and improved impact parameter resolution. Finally, SiD is designed with a cost constraint in mind. Significant advances and new capabilities have been made and are described in this report.« less

All silicon approach to modulation and detection at λ = 2 μm

NASA Astrophysics Data System (ADS)

Littlejohns, Callum G.; Nedeljkovic, Milos; Cao, Wei; Soler Penades, Jordi; Hagan, David; Ackert, Jason J.; Rouifed, Mohamed Saïd.; Wang, Wanjun; Zhang, Zecen; Qiu, Haodong; Guo Xin, Tina; Knights, Andrew P.; Reed, Graham T.; Mashanovich, Goran Z.; Wang, Hong; Thomson, David J.

2018-02-01

Silicon photonics has traditionally focused on near infrared wavelengths, with tremendous progress seen over the past decade. However, more recently, research has extended into mid infrared wavelengths of 2 μm and beyond. Optical modulators are a key component for silicon photonics interconnects at both the conventional communication wavelengths of 1.3 μm and 1.55 μm, and the emerging mid-infrared wavelengths. The mid-infrared wavelength range is particularly interesting for a number of applications, including sensing, healthcare and communications. The absorption band of conventional germanium photodetectors only extends to approximately 1.55 μm, so alternative methods of photodetection are required for the mid-infrared wavelengths. One possible CMOS compatible solution is a silicon defect detector. Here, we present our recent results in these areas. Modulation at the wavelength of 2 μm has been theoretically investigated, and photodetection above 25 Gb/s has been practically demonstrated.

Using the intrinsic properties of silicon micro-ring modulators for characterization of RF termination

NASA Astrophysics Data System (ADS)

Wang, Zhao; Knights, Andrew P.

2017-02-01

We describe a direct experimental method to determine the effective driving voltage (Vpp) applied to a silicon photonic modulator possessing an impedance mismatch between the unterminated capacitive load and input source. This method thus permits subsequent estimation of the power consumption of an imperfectly terminated device as well as a deduction of load impedance for optimization of termination design. The capacitive load in this paper is a silicon micro-ring modulator with an integrated p-n junction acting as a phase shifter. The RF reflection under high-speed drive is directly determined from observation of the eye-diagram following measurement of the power transfer function for various junction bias.

A hybrid silicon membrane spatial light modulator for optical information processing

NASA Technical Reports Server (NTRS)

Pape, D. R.; Hornbeck, L. J.

1984-01-01

A new two dimensional, fast, analog, electrically addressable, silicon based membrane spatial light modulator (SLM) was developed for optical information processing applications. Coherent light reflected from the mirror elements is phase modulated producing an optical Fourier transform of an analog signal input to the device. The DMD architecture and operating parameters related to this application are presented. A model is developed that describes the optical Fourier transform properties of the DMD.

R&D issues in scale-up and manufacturing of amorphous silicon tandem modules

DOE Office of Scientific and Technical Information (OSTI.GOV)

Arya, R.R.; Carlson, D.E.; Chen, L.F.

1999-03-01

R & D on amorphous silicon based tandem junction devices has improved the throughtput, the material utilization, and the performance of devices on commercial tin oxide coated glass. The tandem junction technology has been scaled-up to produce 8.6&hthinsp;Ft{sup 2} monolithically integrated modules in manufacturing at the TF1 plant. Optimization of performance and stability of these modules is ongoing. {copyright} {ital 1999 American Institute of Physics.}

Omnidirectional, circularly polarized, cylindrical microstrip antenna

NASA Technical Reports Server (NTRS)

Stanton, Philip H. (Inventor)

1985-01-01

A microstrip cylindrical antenna comprised of two concentric subelements on a ground cylinder, a vertically polarized (E-field parallel to the axis of the antenna cylinder) subelement on the inside and a horizontally polarized (E-field perpendicular to the axis) subelement on the outside. The vertical subelement is a wraparound microstrip radiator. A Y-shaped microstrip patch configuration is used for the horizontally polarized radiator that is wrapped 1.5 times to provide radiating edges on opposite sides of the cylindrical antenna for improved azimuthal pattern uniformity. When these subelements are so fed that their far fields are equal in amplitude and phased 90.degree. from each other, a circularly polarized EM wave results. By stacking a plurality of like antenna elements on the ground cylinder, a linear phased array antenna is provided that can be beam steered to the desired elevation angle.

Design and Analysis of a Triple Stop-band Filter Using Ratioed Periodical Defected Microstrip Structure

NASA Astrophysics Data System (ADS)

Jiang, Tao; Wang, Yanyan; Li, Yingsong

2017-07-01

In this paper, a triple stop-band filter with a ratioed periodical defected microstrip structure is proposed for wireless communication applications. The proposed ratioed periodical defected microstrip structures are spiral slots, which are embedded into a 50 Ω microstrip line to obtain multiple stop-bands. The performance of the proposed triple stop-band filter is investigated numerically and experimentally. Moreover, the equivalent circuit model of the proposed filter is also established and discussed. The results are given to verify that the proposed triple stop-band filter has three stop bands at 3.3 GHz, 5.2 GHz, 6.8 GHz to reject the unwanted signals, which is promising for integrating into UWB communication systems to efficiently prevent the potential interferences from unexpected narrowband signals such as WiMAX, WLAN and RFID communication systems.

Advanced photovoltaic power systems using tandem GaAs/GaSb concentrator modules

NASA Technical Reports Server (NTRS)

Fraas, L. M.; Kuryla, M. S.; Pietila, D. A.; Sundaram, V. S.; Gruenbaum, P. E.; Avery, J. E.; Dihn, V.; Ballantyne, R.; Samuel, C.

1992-01-01

In 1989, Boeing announced the fabrication of a tandem gallium concentrator solar cell with an energy conversion efficiency of 30 percent. This research breakthrough has now led to panels which are significantly smaller, lighter, more radiation resistant, and potentially less expensive than the traditional silicon flat plate electric power supply. The new Boeing tandem concentrator (BTC) module uses an array of lightweight silicone Fresnel lenses mounted on the front side of a light weight aluminum honeycomb structure to focus sunlight onto small area solar cells mounted on a thin back plane. This module design is shown schematically. The tandem solar cell in this new module consists of a gallium arsenide light sensitive cell with a 24 percent energy conversion efficiency stacked on top of a gallium antimonide infrared sensitive cell with a conversion efficiency of 6 percent. This gives a total efficiency 30 percent for the cell-stack. The lens optical efficiency is typically 85 percent. Discounting for efficiency losses associated with lens packing, cell wiring, and cell operating temperature still allows for a module efficiency of 22 percent which leads to a module power density of 300 Watts/sq. m. This performance provides more than twice the power density available from a single crystal silicon flat plate module and at least four times the power density available from amorphous silicon modules. The fact that the lenses are only 0.010 ft. thick and the aluminum foil back plane is only 0.003 ft. thick leads to a very lightweight module. Although the cells are an easy to handle thickness of 0.020 ft., the fact that they are small, occupying one-twenty-fifth of the module area, means that they add little to the module weight. After summing all the module weights and given the high module power, we find that we are able to fabricate BTC modules with specific power of 100 watts/kg.

Intelligent Front-end Electronics for Silicon photodetectors (IFES)

NASA Astrophysics Data System (ADS)

Sauerzopf, Clemens; Gruber, Lukas; Suzuki, Ken; Zmeskal, Johann; Widmann, Eberhard

2016-05-01

While high channel density can be easily achieved for big experiments using custom made microchips, providing something similar for small and medium size experiments imposes a challenge. Within this work we describe a novel and cost effective solution to operate silicon photodetectors such as silicon photo multipliers (SiPM). The IFES modules provide the bias voltage for the detectors, a leading edge discriminator featuring time over threshold and a differential amplifier, all on one printed circuit board. We demonstrate under realistic conditions that the module is usable for high resolution timing measurements exploiting both charge and time information. Furthermore we show that the modules can be easily used in larger detector arrays. All in all this confirms that the IFES modules are a viable option for a broad range of experiments if cost-effectiveness and small form factor are required.

Flat Plate Solar Array Project: Proceedings of the 20th Project Integration Meeting

NASA Technical Reports Server (NTRS)

Mcdonald, R. R.

1982-01-01

Progress made by the Flat-Plate Solar Array Project during the period November 1981 to April 1982 is reported. Project analysis and integration, technology research in silicon material, large-area silicon sheet and environmental isolation, cell and module formation, engineering sciences, and module performance and failure analysis are covered.

NREL Technologies Win National Awards

Science.gov Websites

percent for a prototype module, 7.6 percent for a commercial module) from amorphous silicon, which is less expensive to produce than crystalline silicon used in most commercial solar cells. The resulting product is biomass resources such as wood waste or plant material into gas for electric power generation. The new

Bandwidth Study of Microstrip Reflectarray And A Novel Phased Reflectarray Concept

NASA Technical Reports Server (NTRS)

Huang, John

1995-01-01

A microstrip reflectarray [1,2] is a flat reflector antenna that can be conformally mounted onto its supporting structure without consuming a significant amount of real estate and without adding significant mass.

High-power microstrip switch

NASA Technical Reports Server (NTRS)

Choi, S. D.

1974-01-01

Switch, which uses only two p-i-n diodes on microstrip substrate, has been developed for application in spacecraft radio systems. Switch features improved power drain, weight, volume, magnetic cleanliness, and reliability, over currently-used circulator and electromechanical switches.

Fabrication of Microstripline Wiring for Large Format Transition Edge Sensor Arrays

NASA Technical Reports Server (NTRS)

Chervenak, James A.; Adams, J. M.; Bailey, C. N.; Bandler, S.; Brekosky, R. P.; Eckart, M. E.; Erwin, A. E.; Finkbeiner, F. M.; Kelley, R. L.; Kilbourne, C. A.;

Resonant frequency of microstrip antennas calculated from TE-excitation of an infinite strip embedded in a grounded dielectric slab

NASA Technical Reports Server (NTRS)

Bailey, M. C.

1979-01-01

The calculation of currents induced by a plane wave normally incident upon an infinite strip embedded in a grounded dielectric slab is used to infer the resonant width (or frequency) of rectangular microstrip antennas. By placing the strip inside the dielectric, the effect of a dielectric cover of the same material as the substrate can be included in the calculation of resonant frequency. A comparison with measured results indicated agreement of 1 percent or better for rectangular microstrip antennas constructed on Teflon-fiberglass substrate.

[Microstrip antenna design and system research of radio frequency identification temperature sensor].

PubMed

Yang, Hao; Yang, Xiaohe; Chen, Yuquan; Pan, Min

2008-12-01

Radio frequency identification sensor network, which is a product of integrating radio frequency identification (RFID) with wireless sensor network (WSN), is introduced in this paper. The principle of radio frequency identification sensor is analyzed, and the importance of the antenna is emphasized. Then three kinds of common antennae, namely coil antenna, dipole antenna and microstrip antenna, are discussed. Subsequently, according to requirement, we have designed a microstrip antenna in a wireless temperature-monitoring and controlling system. The measurement of factual effect showed the requirement was fulfilled.

A Compact Low-loss Magic-T using Microstrip-Slotline Transitions

NASA Technical Reports Server (NTRS)

U-yen, Kongpop; Wollack, Edward J.; Moseley, Samuel H.; Papapolymerou, John; Laskar, Joy

2007-01-01

The design of a compact low-loss magic-T is proposed. The planar magic-T incorporates the compact microstrip-slotline tee junction and small microstrip-slotline transition area to reduce slotline radiation. The experimental results show that the magic-T produces broadband in-phase and out-of-phase power combiner/divider responses, has an average in-band insertion loss of 0.3 dB and small in-band phase and amplitude imbalance of less than plus or minus 1.6 deg. and plus or minus 0.3 dB, respectively.

Experimental Verification of the Use of Metal Filled Via Hole Fences for Crosstalk Control of Microstrip Lines in LTCC Packages

NASA Technical Reports Server (NTRS)

Ponchak, George E.; Chun, Donghoon; Katehi, Linda P. B.; Yook, Jong-Gwan

1999-01-01

Coupling between microstrip lines in dense RF packages is a common problem that degrades circuit performance. Prior 3D-FEM electromagnetic simulations have shown that metal filled via hole fences between two adjacent microstrip lines actually increases coupling between the lines; however, if the top of the via posts are connected by a metal Strip, coupling is reduced. In this paper, experimental verification of the 3D-FEM simulations Is demonstrated for commercially fabricated LTCC packages.

WMSA for wireless communication applications

DOE Office of Scientific and Technical Information (OSTI.GOV)

Vats, Monika; Agarwal, Alok, E-mail: alokagarwal26@yahoo.com; Kumar, Ravindra

2016-03-09

Modified rectangular compact microstrip patch antenna having finite ground plane is proposed in this paper. Wideband Microstrip Antenna (WMSA) is achieved by corner cut and inserting air gaps inside the edges of the radiating patch having finite ground plane. The obtained impedance bandwidth for 10 dB return loss for the operating frequency f{sub 0} = 2.09 GHz is 28.7 % (600 MHz), which is very high as compared to the bandwidth obtained for the conventional microstrip antenna. Compactness with wide bandwidth of this antenna is practically useful for the wireless communication systems.

Electric Field Distribution in High Voltage Power Modules Using Finite Element Simulations

NASA Astrophysics Data System (ADS)

Wang, Zhao; Liu, Yaoning

2018-03-01

With the development of the high voltage insulated gate bipolar transistor (IGBT) power module, it leads to serious problems concerning the electric field insulation. The electric field capabilities of the silicone gels used in the power module encapsulation directly affect the module insulation. Some solutions have been developed to optimize the electric field and reliability. In this letter, the finite element simulation was used to analyze and localize the maximum electric field position; solutions were proposed to improve the module insulation. It’s demonstrated that BaTiO3 silicone composite is a promising insulation material for high voltage power device.

Low-voltage high-performance silicon photonic devices and photonic integrated circuits operating up to 30 Gb/s.

PubMed

Kim, Gyungock; Park, Jeong Woo; Kim, In Gyoo; Kim, Sanghoon; Kim, Sanggi; Lee, Jong Moo; Park, Gun Sik; Joo, Jiho; Jang, Ki-Seok; Oh, Jin Hyuk; Kim, Sun Ae; Kim, Jong Hoon; Lee, Jun Young; Park, Jong Moon; Kim, Do-Won; Jeong, Deog-Kyoon; Hwang, Moon-Sang; Kim, Jeong-Kyoum; Park, Kyu-Sang; Chi, Han-Kyu; Kim, Hyun-Chang; Kim, Dong-Wook; Cho, Mu Hee

2011-12-19

We present high performance silicon photonic circuits (PICs) defined for off-chip or on-chip photonic interconnects, where PN depletion Mach-Zehnder modulators and evanescent-coupled waveguide Ge-on-Si photodetectors were monolithically integrated on an SOI wafer with CMOS-compatible process. The fabricated silicon PIC(off-chip) for off-chip optical interconnects showed operation up to 30 Gb/s. Under differential drive of low-voltage 1.2 V(pp), the integrated 1 mm-phase-shifter modulator in the PIC(off-chip) demonstrated an extinction ratio (ER) of 10.5dB for 12.5 Gb/s, an ER of 9.1dB for 20 Gb/s, and an ER of 7.2 dB for 30 Gb/s operation, without adoption of travelling-wave electrodes. The device showed the modulation efficiency of V(π)L(π) ~1.59 Vcm, and the phase-shifter loss of 3.2 dB/mm for maximum optical transmission. The Ge photodetector, which allows simpler integration process based on reduced pressure chemical vapor deposition exhibited operation over 30 Gb/s with a low dark current of 700 nA at -1V. The fabricated silicon PIC(intra-chip) for on-chip (intra-chip) photonic interconnects, where the monolithically integrated modulator and Ge photodetector were connected by a silicon waveguide on the same chip, showed on-chip data transmissions up to 20 Gb/s, indicating potential application in future silicon on-chip optical network. We also report the performance of the hybrid silicon electronic-photonic IC (EPIC), where a PIC(intra-chip) chip and 0.13μm CMOS interface IC chips were hybrid-integrated.

Terahertz emission from the intrinsic Josephson junctions of high-symmetry thermally-managed Bi2Sr2CaCu2O8+δ microstrip antennas

NASA Astrophysics Data System (ADS)

Klemm, Richard A.; Davis, Andrew E.; Wang, Qing X.; Yamamoto, Takashi; Cerkoney, Daniel P.; Reid, Candy; Koopman, Maximiliaan L.; Minami, Hidetoshi; Kashiwagi, Takanari; Rain, Joseph R.; Doty, Constance M.; Sedlack, Michael A.; Morales, Manuel A.; Watanabe, Chiharu; Tsujimoto, Manabu; Delfanazari, Kaveh; Kadowaki, Kazuo

2017-12-01

We show for high-symmetry disk, square, or equilateral triangular thin microstrip antennas of any composition respectively obeying C ∞v , C 4v , and C 3v point group symmetries, that the transverse magnetic electromagnetic cavity mode wave functions are restricted in form to those that are one-dimensional representations of those point groups. Plots of the common nodal points of the ten lowest-energy non-radiating two-dimensional representations of each of these three symmetries are presented. For comparison with symmetry-broken disk intrinsic Josephson junction microstrip antennas constructed from the highly anisotropic layered superconductor Bi2Sr2CaCu2O8+δ (BSCCO), we present plots of the ten lowest frequency orthonormal wave functions and of their emission power angular distributions. These results are compared with previous results for square and equilateral triangular thin microstrip antennas.

Excitation of propagating magnetization waves by microstrip antennas

NASA Astrophysics Data System (ADS)

Dmitriev, V. F.; Kalinikos, B. A.

1988-11-01

We discuss the self-consistent theory of excitation of dipole-exchange magnetization waves by microstrip antennas in a metal-dielectric-ferrite-dielectric-metal stratified structure, magnetized under an arbitrary angle to the surface. Spin-wave Green's functions are derived, describing the response of the spin-system to a spatially inhomogeneous varying magnetic field. The radiative resistance of microstrip antenna is calculated. In this case the distribution of surface current density in the antenna is found on the basis of the analytic solution of a singular integral equation. The nature of the effect of metallic screens and redistributed surface current densities in the antenna on the frequency dependence of the resistive radiation is investigated. Approximate relations are obtained, convenient for practical calculations of radiative resistance of microstrip antennas both in a free and in a screened ferromagnetic film. The theoretical calculations are verified by data of experiments carried out on monocrystalline films of iron-yttrium garnet.

Smaller-loss planar SPP transmission line than conventional microstrip in microwave frequencies.

PubMed

Zhang, Hao Chi; Zhang, Qian; Liu, Jun Feng; Tang, Wenxuan; Fan, Yifeng; Cui, Tie Jun

2016-03-17

Transmission line is a basic component in all passive devices, integrated circuits, and systems. Microstrip is the most popular transmission line in the microwave and millimeter-wave frequencies, and has been widely used in current electronic devices, circuits, and systems. One of the important issues to be solved in such applications is the relatively large transmission loss of microstrip. Here, we propose a method to reduce the loss of microwave transmission line based on the designable wavenumber of spoof surface plasmon polaritons (SPPs). Using this characteristic, we analyze and experimentally demonstrate the low-loss feature of the SPP transmission line through the perturbation method and S-parameter measurements, respectively. Both simulation and experimental results show that the SPP transmission line has much smaller transmission loss than traditional microstrip with the same size in the microwave frequencies. Hence, the spoof SPP transmission line may make a big step forward in the low-loss circuits and systems.

Symmetric Absorber-Coupled Far-Infrared Microwave Kinetic Inductance Detector

NASA Technical Reports Server (NTRS)

U-yen, Kongpop (Inventor); Wollack, Edward J. (Inventor); Brown, Ari D. (Inventor); Stevenson, Thomas R. (Inventor); Patel, Amil A. (Inventor)

2016-01-01

The present invention relates to a symmetric absorber-coupled far-infrared microwave kinetic inductance detector including: a membrane having an absorber disposed thereon in a symmetric cross bar pattern; and a microstrip including a plurality of conductor microstrip lines disposed along all edges of the membrane, and separated from a ground plane by the membrane. The conducting microstrip lines are made from niobium, and the pattern is made from a superconducting material with a transition temperature below niobium, including one of aluminum, titanium nitride, or molybdenum nitride. The pattern is disposed on both a top and a bottom of the membrane, and creates a parallel-plate coupled transmission line on the membrane that acts as a half-wavelength resonator at readout frequencies. The parallel-plate coupled transmission line and the conductor microstrip lines form a stepped impedance resonator. The pattern provides identical power absorption for both horizontal and vertical polarization signals.

Manufacturing Methods and Technology Program for Low Cost Hybrid Silicon Photodetector Modules

DTIC Science & Technology

1979-12-30

RESEARCH LN EVEMN TECHNICAL REPORT 4 CORADOOM- 77- C -0489-F I CMANUFACTURING METHODS AND TECHNOLOGY PROGRAM FOR LOW COST HYBRID SILICON PHOTODETECTORS...rINAL REPORT OR US ARMY CONTRACT NO, DAAD07-77- C -0489 TITLED 11MM&TMud SURE FOR COS HYBRID SILICON PHOTODRTECTOR MODULS", DATED 79/12/30 Gentlemen...when it is no longer needed. Do not return it to the originator. D.-stributi-on! Availability COcas- :Dist c specia S I ’ Cb.A *"itI. -P0 ~~J~,+~1

76 FR 70960 - Crystalline Silicon Photovoltaic Cells, Whether or Not Assembled Into Modules, From the People's...

Federal Register 2010, 2011, 2012, 2013, 2014

2011-11-16

... silicon photovoltaic cells, whether or not assembled into modules (``solar cells'') from the People's Republic of China (``PRC'') filed in proper form by SolarWorld Industries America Inc. (``Petitioner'').\\1... Tariff Act of 1930, as amended (``the Act''), Petitioner alleges that imports of solar cells from the PRC...

77 FR 17439 - Crystalline Silicon Photovoltaic Cells, Whether or Not Assembled Into Modules, From the People's...

Federal Register 2010, 2011, 2012, 2013, 2014

2012-03-26

... silicon photovoltaic cells, whether or not assembled into modules (solar cells) from the People's Republic... History The Department initiated a countervailing duty (CVD) investigation of solar cells from the PRC on.... Customs and Border Protection (CBP) entry data for U.S. imports of solar cells from the PRC for the period...

Flexible integration of free-standing nanowires into silicon photonics.

PubMed

Chen, Bigeng; Wu, Hao; Xin, Chenguang; Dai, Daoxin; Tong, Limin

2017-06-14

Silicon photonics has been developed successfully with a top-down fabrication technique to enable large-scale photonic integrated circuits with high reproducibility, but is limited intrinsically by the material capability for active or nonlinear applications. On the other hand, free-standing nanowires synthesized via a bottom-up growth present great material diversity and structural uniformity, but precisely assembling free-standing nanowires for on-demand photonic functionality remains a great challenge. Here we report hybrid integration of free-standing nanowires into silicon photonics with high flexibility by coupling free-standing nanowires onto target silicon waveguides that are simultaneously used for precise positioning. Coupling efficiency between a free-standing nanowire and a silicon waveguide is up to ~97% in the telecommunication band. A hybrid nonlinear-free-standing nanowires-silicon waveguides Mach-Zehnder interferometer and a racetrack resonator for significantly enhanced optical modulation are experimentally demonstrated, as well as hybrid active-free-standing nanowires-silicon waveguides circuits for light generation. These results suggest an alternative approach to flexible multifunctional on-chip nanophotonic devices.Precisely assembling free-standing nanowires for on-demand photonic functionality remains a challenge. Here, Chen et al. integrate free-standing nanowires into silicon waveguides and show all-optical modulation and light generation on silicon photonic chips.

Phase modulation in horizontal metal-insulator-silicon-insulator-metal plasmonic waveguides.

PubMed

Zhu, Shiyang; Lo, G Q; Kwong, D L

2013-04-08

An extremely compact Si phase modulator is proposed and validated, which relies on effective modulation of the real part of modal index of horizontal metal-insulator-Si-insulator-metal plasmonic waveguides by a voltage applied between the metal cover and the Si core. Proof-of-concept devices are fabricated on silicon-on-insulator substrates using standard complementary metal-oxide-semiconductor technology using copper as the metal and thermal silicon dioxide as the insulator. A modulator with a 1-μm-long phase shifter inserted in an asymmetric Si Mach-Zehnder interferometer exhibits 9-dB extinction ratio under a 6-V/10-kHz voltage swing. Numerical simulations suggest that high speed and low driving voltage could be achieved by shortening the distance between the Si core and the n(+)-contact and by using a high-κ dielectric as the insulator, respectively.

Behavioral data of thin-film single junction amorphous silicon (a-Si) photovoltaic modules under outdoor long term exposure

PubMed Central

Kichou, Sofiane; Silvestre, Santiago; Nofuentes, Gustavo; Torres-Ramírez, Miguel; Chouder, Aissa; Guasch, Daniel

2016-01-01

Four years׳ behavioral data of thin-film single junction amorphous silicon (a-Si) photovoltaic (PV) modules installed in a relatively dry and sunny inland site with a Continental-Mediterranean climate (in the city of Jaén, Spain) are presented in this article. The shared data contributes to clarify how the Light Induced Degradation (LID) impacts the output power generated by the PV array, especially in the first days of exposure under outdoor conditions. Furthermore, a valuable methodology is provided in this data article permitting the assessment of the degradation rate and the stabilization period of the PV modules. Further discussions and interpretations concerning the data shared in this article can be found in the research paper “Characterization of degradation and evaluation of model parameters of amorphous silicon photovoltaic modules under outdoor long term exposure” (Kichou et al., 2016) [1]. PMID:26977439

High-Q photonic resonators and electro-optic coupling using silicon-on-lithium-niobate

NASA Astrophysics Data System (ADS)

Witmer, Jeremy D.; Valery, Joseph A.; Arrangoiz-Arriola, Patricio; Sarabalis, Christopher J.; Hill, Jeff T.; Safavi-Naeini, Amir H.

2017-04-01

Future quantum networks, in which superconducting quantum processors are connected via optical links, will require microwave-to-optical photon converters that preserve entanglement. A doubly-resonant electro-optic modulator (EOM) is a promising platform to realize this conversion. Here, we present our progress towards building such a modulator by demonstrating the optically-resonant half of the device. We demonstrate high quality (Q) factor ring, disk and photonic crystal resonators using a hybrid silicon-on-lithium-niobate material system. Optical Q factors up to 730,000 are achieved, corresponding to propagation loss of 0.8 dB/cm. We also use the electro-optic effect to modulate the resonance frequency of a photonic crystal cavity, achieving a electro-optic modulation coefficient between 1 and 2 pm/V. In addition to quantum technology, we expect that our results will be useful both in traditional silicon photonics applications and in high-sensitivity acousto-optic devices.

25-Gb/s broadband silicon modulator with 0.31-V·cm VπL based on forward-biased PIN diodes embedded with passive equalizer.

PubMed

Baba, Takeshi; Akiyama, Suguru; Imai, Masahiko; Usuki, Tatsuya

2015-12-28

We investigated the broadband operations of a silicon Mach-Zehnder modulator (MZM) based on a forward-biased-PIN diode. The phase shifter was integrated with a passive-circuit equalizer to compensate for the narrowband characteristics of the diodes, which consists of a simple resistance of doped silicon and a parallel-plate metal capacitance. The device structure was simple and fabricated using standard CMOS processes. The measured results for a 50-Ω driver indicated there was a small VπL of 0.31 V·cm and a flat frequency response for a 3-dB bandwidth (f(3dB)) of 17 GHz, which agree well with the designed values. A 25-Gb/s large-signal operation was obtained using binary signals without pre-emphasis. The modulator showed a linear modulation property to the applied voltage, due to the metal capacitance of the equalizer.

Design of a dual linear polarization antenna using split ring resonators at X-band

NASA Astrophysics Data System (ADS)

Ahmed, Sadiq; Chandra, Madhukar

2017-11-01

Dual linear polarization microstrip antenna configurations are very suitable for high-performance satellites, wireless communication and radar applications. This paper presents a new method to improve the co-cross polarization discrimination (XPD) for dual linear polarized microstrip antennas at 10 GHz. For this, three various configurations of a dual linear polarization antenna utilizing metamaterial unit cells are shown. In the first layout, the microstrip patch antenna is loaded with two pairs of spiral ring resonators, in the second model, a split ring resonator is placed between two microstrip feed lines, and in the third design, a complementary split ring resonators are etched in the ground plane. This work has two primary goals: the first is related to the addition of metamaterial unit cells to the antenna structure which permits compensation for an asymmetric current distribution flow on the microstrip antenna and thus yields a symmetrical current distribution on it. This compensation leads to an important enhancement in the XPD in comparison to a conventional dual linear polarized microstrip patch antenna. The simulation reveals an improvement of 7.9, 8.8, and 4 dB in the E and H planes for the three designs, respectively, in the XPD as compared to the conventional dual linear polarized patch antenna. The second objective of this paper is to present the characteristics and performances of the designs of the spiral ring resonator (S-RR), split ring resonator (SRR), and complementary split ring resonator (CSRR) metamaterial unit cells. The simulations are evaluated using the commercial full-wave simulator, Ansoft High-Frequency Structure Simulator (HFSS).

30-100-GHz inductors and transformers for millimeter-wave (Bi)CMOS integrated circuits

NASA Astrophysics Data System (ADS)

Dickson, T. O.; Lacroix, M.-A.; Boret, S.; Gloria, D.; Beerkens, R.; Voinigescu, S. P.

2005-01-01

Silicon planar and three-dimensional inductors and transformers were designed and characterized on-wafer up to 100 GHz. Self-resonance frequencies (SRFs) beyond 100 GHz were obtained, demonstrating for the first time that spiral structures are suitable for applications such as 60-GHz wireless local area network and 77-GHz automotive RADAR. Minimizing area over substrate is critical to achieving high SRF. A stacked transformer is reported with S21 of -2.5 dB at 50 GHz, and which offers improved performance and less area (30 μm × 30 μm) than planar transformers or microstrip couplers. A compact inductor model is described, along with a methodology for extracting model parameters from simulated or measured y-parameters. Millimeter-wave SiGe BiCMOS mixer and voltage-controlled-oscillator circuits employing spiral inductors are presented with better or comparable performance to previously reported transmission-line-based circuits.

Superconducting Vacuum-Gap Crossovers for High Performance Microwave Applications

NASA Technical Reports Server (NTRS)

Denis, Kevin L.; Brown, Ari D.; Chang, Meng-Ping; Hu, Ron; U-Yen, Kongpop; Wollack, Edward J.

2016-01-01

The design and fabrication of low-loss wide-bandwidth superconducting vacuum-gap crossovers for high performance millimeter wave applications are described. In order to reduce ohmic and parasitic losses at millimeter wavelengths a vacuum gap is preferred relative to dielectric spacer. Here, vacuum-gap crossovers were realized by using a sacrificial polymer layer followed by niobium sputter deposition optimized for coating coverage over an underlying niobium signal layer. Both coplanar waveguide and microstrip crossover topologies have been explored in detail. The resulting fabrication process is compatible with a bulk micro-machining process for realizing waveguide coupled detectors, which includes sacrificial wax bonding, and wafer backside deep reactive ion etching for creation of leg isolated silicon membrane structures. Release of the vacuum gap structures along with the wax bonded wafer after DRIE is implemented in the same process step used to complete the detector fabrication. ?

Design and prototype studies of the TOTEM Roman pot detectors

NASA Astrophysics Data System (ADS)

Oriunno, Marco; Battistin, Michele; David, Eric; Guglielmini, Paolo; Joram, Christian; Radermacher, Ernst; Ruggiero, Gennaro; Wu, Jihao; Vacek, Vaclav; Vins, Vaclav

2007-10-01

The Roman pots of the TOTEM experiment at LHC will be equipped with edgeless silicon micro-strip detectors. A detector package consists of 10 detector planes cooled at -15C in vacuum. The detector resolution is 20 μm, the overall alignment precision has to be better than 30 μm. The detector planes are composed of a kapton hybrid glued on a substrate made of low expansion alloy, CE07 with 70% Si and 30% Al. An evaporative cooling system based on the fluorocarbon C3F8 with oil-free compressors has been adopted. The throttling of the fluid is done locally through capillaries. A thermo-mechanical prototype has been assembled. The results fully match the requirements and the expectations of calculations. They show a low thermal gradient on the cards and a uniform temperature distribution over the 10 planes.

a New Method to Measure 10B Uptake in Lung Adenocarcinoma in Hospital Bnct

NASA Astrophysics Data System (ADS)

Donegani, E. M.; Basilico, F.; Bolognini, D.; Borasio, P.; Capelli, E.; Cappelletti, P.; Chiari, P.; Frigerio, M.; Gelosa, S.; Giannini, G.; Hasan, S.; Mattera, A.; Mauri, P.; Monti, A. F.; Ostinelli, A.; Prest, M.; Vallazza, E.; Zanini, A.

2010-04-01

Boron Neutron Capture Therapy (BNCT) is a radiotherapic technique still under development that could become crucial in the fight against some types of cancer (extended ones, located near vital organs or radio resistant). This binary technique requires the administration to the patient of a boron delivery agent and the irradiation with a thermal neutron beam. The high LET particles produced in the 10B(n,α)7Li reaction are exploited to destroy the tumour cells. This work presents a new system based on neutron autoradiography with a non-depleted self-triggering microstrip silicon detector, using a neutron beam produced by a hospital Linac. The system is fast, real time and allows the detection of 10B contents down to 25 ng. The main results on the study of 10B uptake in biological samples will be described in terms of kinetic curves (10B uptake as a function of time).

High energy physics

DOE Office of Scientific and Technical Information (OSTI.GOV)

Kernan, A.; Shen, B.C.; Ma, E.

Hadron collider studies will focus on: (i) the search for the top quark with the newly installed D0 detector at the Fermilab Tevatron collider, (ii) the upgrade of the D0 detector to match the new main injector luminosity and (iii) R&D on silicon microstrip tracking devices for the SSC. High statistics studies of Z{sup 0} decay will continue with the OPAL detector at LEP. These studies will include a direct measurement of Z decay to neutrinos, the search for Higgs and heavy quark decays of Z. Preparations for the Large Scintillation Neutrino Detector (LSND) to measure neutrino oscillations at LAMPFmore » will focus on data acquisition and testing of photomultiplier tubes. In the theoretical area E. Ma will concentrate on mass-generating radiative mechanisms for light quarks and leptons in renormalizable gauge field theories. J. Wudka`s program includes a detailed investigation of the magnetic-flip approach to the solar neutrino.« less

Simulation and experimental measurement of radon activity using a multichannel silicon-based radiation detector.

PubMed

Ozdemir, F B; Selcuk, A B; Ozkorucuklu, S; Alpat, A B; Ozdemir, T; Ӧzek, N

2018-05-01

In this study, high-precision radiation detector (HIPRAD), a new-generation semiconductor microstrip detector, was used for detecting radon (Rn-222) activity. The aim of this study was to detect radon (Rn-222) activity experimentally by measuring the energy of particles in this detector. Count-ADC channel, eta-charge, and dose-response values were experimentally obtained using HIPRAD. The radon simulation in the radiation detector was theoretically performed using the Geant4 software package. The obtained radioactive decay, energy generation, energy values, and efficiency values of the simulation were plotted using the root program. The new-generation radiation detector proved to have 95% reliability according to the obtained dose-response graphs. The experimental and simulation results were found to be compatible with each other and with the radon decays and literature studies. Copyright © 2018 Elsevier Ltd. All rights reserved.

An Instrument to Measure Elemental Energy Spectra of Cosmic Ray Nuclei Up to 10(exp 16) eV

NASA Technical Reports Server (NTRS)

Adams, J.; Bashindzhagyan, G.; Chilingarian, A.; Drury, L.; Egorov, N.; Golubkov,S.; Korotkova, N.; Panasyuk, M.; Podorozhnyi, D.; Procqureur, J.

2000-01-01

A longstanding goal of cosmic ray research is to measure the elemental energy spectra of cosmic rays up to and through the "knee" (approx. equal to 3 x 10 (exp 15) eV. It is not currently feasible to achieve this goal with an ionization calorimeter because the mass required to be deployed in Earth orbit is very large (at least 50 tonnes). An alternative method will be presented. This is based on measuring the primary particle energy by determining the angular distribution of secondaries produced in a target layer using silicon microstrip detector technology. The proposed technique can be used over a wide range of energies (10 (exp 11)- 10 (exp 16) eV) and gives an energy resolution of 60% or better. Based on this technique, a design for a new lightweight instrument with a large aperture (KLEM) will be described.

Integration of hybrid silicon lasers and electroabsorption modulators.

PubMed

Sysak, Matthew N; Anthes, Joel O; Bowers, John E; Raday, Omri; Jones, Richard

2008-08-18

We present an integration platform based on quantum well intermixing for multi-section hybrid silicon lasers and electroabsorption modulators. As a demonstration of the technology, we have fabricated discrete sampled grating DBR lasers and sampled grating DBR lasers integrated with InGaAsP/InP electroabsorption modulators. The integrated sampled grating DBR laser-modulators use the as-grown III-V bandgap for optical gain, a 50 nm blue shifted bandgap for the electrabosprtion modulators, and an 80 nm blue shifted bandgap for low loss mirrors. Laser continuous wave operation up to 45 ?C is achieved with output power >1.0 mW and threshold current of <50 mA. The modulator bandwidth is >2GHz with 5 dB DC extinction.

Metal-capped silicon organic micro-ring electro-optical modulator (Conference Presentation)

NASA Astrophysics Data System (ADS)

Zaki, Aya O.; Kirah, Khaled A.; Swillam, Mohamed A.

2017-02-01

An ultra-compact hybrid plasmonic waveguide ring electro-optical modulator is designed to be easily fabricated on silicon on insulator (SOI) substrates using standard silicon photonics technology. The proposed waveguide is based on a buried standard silicon waveguide of height 220 nm topped with polymer and metal. The key advantage of this novel design is that only the silicon layer of the waveguide is structured as a coupled ring resonator. Then, the device is covered with electro-optical polymer and metal in post processes with no need for lithography or accurate mask alignment techniques. The simple fabrication method imposes many design challenges to obtain a resonator of reasonable loaded quality factor and high extinction ratio. Here, the performance of the resonator is optimized in the telecom wavelength range around 1550 nm using 3D FDTD simulations. The design of the coupling junction between the access waveguide and the tightly bent ring is thoroughly studied. The extension of the metal over the coupling region is exploited to make the critical dimension of the design geometry at least 2.5 times larger than conventional plasmonic resonators and the design is thus more robust. In this paper, we demonstrate an electro-optical modulator that offers an insertion loss < 1 dB, a modulation depth of 12 dB for an applied peak to peak voltage of only 2 V and energy consumption of 1.74 fJ/bit. The performance is superior to previously reported hybrid plasmonic ring resonator based modulators while the design shows robustness and low fabrication cost.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Atmaram, G.H.; Ventre, G.G.; Maytrott, C.W.

This study evaluates the long-term effects of outdoor exposure and high voltage operation on the performance and reliability of flat-plate crystalline silicon photovoltaic modules. The photovoltaic modules selected for this study were employed in the arrays of grid-connected residential photovoltaic prototype systems for over ten years at the Southeast Regional Experiment Station (SE RES) in Cape Canaveral, Florida. The modules included Mobil Ra-180 EFG ribbon silicon modules, Photowatt MU-7061 and ARCO 16-2000 single-crystal silicon modules with round cells. The Mobil and Photowatt modules were Block 5 generation, while the ARCO modules were Block 4 generation type. In all three typesmore » of photovoltaic modules (Mobil, Photowatt and ARCO), no significant power loss occurred over more than ten years of outdoor operation in the warm, humid and ocean-salt environments of coastal Florida. However, the wet insulation resistance values of a majority of the modules in all three types were lower than the values recommended in IEEE Standard 1262. This indicates potential future safety, reliability and lifetime related problems. The visual defects were more pronounced in the ARCO modules, which were manufactured in 1980 than in the Mobil and Photowatt modules, both of which were fabricated in 1983. The ARCO modules showed significant damage to the back surface tedlar in the form of tearing of the tedlar. All of the Mobil and most of the ARCO modules showed significant browning of the encapsulant, while only about half of the Photowatt modules showed significant encapsulant browning. The encapsulant discoloration generally did not appear to have any effect on the modules` power generation.« less

Design and analysis microstrip dipole using fractal Koch for 433 MHz applications

NASA Astrophysics Data System (ADS)

Zulfin, M.; Rambe, A. H.; Budi, B.

2018-02-01

This paper discussed the dipole microstrip antenna design using fractal Koch for working on frequency of 433 MHz. The fractal Koch was used to reduce the size of the microstrip antenna. The smaller the antenna size, the lighter the equipment. AWR simulator was employed to evaluate antenna parameters such as return loss, gain and radiation pattern. The antenna was designed on a FR4 substrate with relative permittivity of 4.4 and thickness 1.6 mm. The result shows that the fractal Koch reduce antenna size about 41.2% and decrease return loss about 30%.

Electrical equivalent circuit for microstrip micro-plasma: control of EM propagation and numerical simulations.

PubMed

Mohamad, Almustafa; Tân-Hoa, Vuong; Jacques, David

2012-01-01

An approach to determine an equivalent electrical circuit of a micro planar discharge on a microstrip printed circuit is reported. The micro discharge is used to realize a dynamic microwave switching circuit. This approach is based on the measurement of the discharge current and the transmission coefficient for a given frequency 2.45 GHz. Numerical methods like FEM can be used to study the effect of plasma parameters on the propagation of electromagnetic waves through a microstrip printed circuit. Plasma behaves as flexible elements that can change its electrical proprieties such as conductivity.

Microstrip Yagi array for MSAT vehicle antenna application

NASA Technical Reports Server (NTRS)

Huang, John; Densmore, Arthur; Pozar, David

1990-01-01

A microstrip Yagi array was developed for the MSAT system as a low-cost mechanically steered medium-gain vehicle antenna. Because its parasitic reflector and director patches are not connected to any of the RF power distributing circuit, while still contributing to achieve the MSAT required directional beam, the antenna becomes a very efficient radiating system. With the complete monopulse beamforming circuit etched on a thin stripline board, the planar microstrip Yagi array is capable of achieving a very low profile. A theoretical model using the Method of Moments was developed to facilitate the ease of design and understanding of this antenna.

Design, simulation and analysis a microstrip antenna using PU-EFB substrate

NASA Astrophysics Data System (ADS)

Mahmud, S. N. S.; Jusoh, M. A.; Jasim, S. E.; Zamani, A. H.; Abdullah, M. H.

2018-04-01

A low cost, light weight and easy to fabricate are the most important factor for future antennas. Microstrip patch antennas offer these advantages and suitable for communication and sensor application. This paper presents a design of simple microstrip patch antenna working on operating frequency of 2.4 GHz. The designed process has been carried out using MATLAB and HFSS software by entering 2.3 for the dielectric constant of PU-EFB. The results showed that high return loss, low bandwidth and good antenna radiation efficiency of which are -21.98 dB, 0.28 dB and 97.33%, respectively.

Design and Fabrication of Graphene Reinforced Polymer Conductive Patch-Based Inset Fed Microstrip Antenna

NASA Astrophysics Data System (ADS)

Deepak, A.; Kannan, P. Muthu; Shankar, P.

This work explores the design and fabrication of graphene reinforced polyvinylidene fluoride (PVDF) patch-based microstrip antenna. Primarily, antenna was designed at 6GHz frequency and simulation results were obtained using Ansoft HFSS tool. Later fabrication of antenna was carried out with graphene-PVDF films as conducting patch deposited on bakelite substrate and copper as ground plane. Graphene-PVDF films were prepared using solvent casting process. The radiation efficiency of fabricated microstrip patch antenna was 48% entailing it to be adapted as a practically functional antenna. Both simulated and the practical results were compared and analyzed.

The 19th Project Integration Meeting

NASA Technical Reports Server (NTRS)

Mcdonald, R. R.

1981-01-01

The Flat-Plate Solar Array Project is described. Project analysis and integration is discussed. Technology research in silicon material, large-area silicon sheet and environmental isolation; cell and module formation; engineering sciences, and module performance and failure analysis. It includes a report on, and copies of visual presentations made at, the 19th Project Integration Meeting held at Pasadena, California, on November 11, 1981.

High-efficiency THz modulator based on phthalocyanine-compound organic films

DOE Office of Scientific and Technical Information (OSTI.GOV)

He, Ting; Zhang, Bo, E-mail: bzhang@cnu.edu.cn, E-mail: sjl-phy@cnu.edu.cn; Shen, Jingling, E-mail: bzhang@cnu.edu.cn, E-mail: sjl-phy@cnu.edu.cn

2015-02-02

We report a high efficiency, broadband terahertz (THz) modulator following a study of phthalocyanine-compound organic films irradiated with an external excitation laser. Both transmission and reflection modulations of each organic/silicon bilayers were measured using THz time-domain and continuous-wave systems. For very low intensities, the experimental results show that AlClPc/Si can achieve a high modulation factor for transmission and reflection, indicating that AlClPc/Si has a superior modulation efficiency compared with the other films (CuPc and SnCl{sub 2}Pc). In contrast, the strong attenuation of the transmitted and reflected THz waves revealed that a nonlinear absorption process takes place at the organic/silicon interface.

Elemental Education.

ERIC Educational Resources Information Center

Daniel, Esther Gnanamalar Sarojini; Saat, Rohaida Mohd.

2001-01-01

Introduces a learning module integrating three disciplines--physics, chemistry, and biology--and based on four elements: carbon, oxygen, hydrogen, and silicon. Includes atomic model and silicon-based life activities. (YDS)

Titanium-silicon oxide film structures for polarization-modulated infrared reflection absorption spectroscopy

PubMed Central

Dunlop, Iain E.; Zorn, Stefan; Richter, Gunther; Srot, Vesna; Kelsch, Marion; van Aken, Peter A.; Skoda, Maximilian; Gerlach, Alexander; Spatz, Joachim P.; Schreiber, Frank

2010-01-01

We present a titanium-silicon oxide film structure that permits polarization modulated infrared reflection absorption spectroscopy on silicon oxide surfaces. The structure consists of a ~6 nm sputtered silicon oxide film on a ~200 nm sputtered titanium film. Characterization using conventional and scanning transmission electron microscopy, electron energy loss spectroscopy, X-ray photoelectron spectroscopy and X-ray reflectometry is presented. We demonstrate the use of this structure to investigate a selectively protein-resistant self-assembled monolayer (SAM) consisting of silane-anchored, biotin-terminated poly(ethylene glycol) (PEG). PEG-associated IR bands were observed. Measurements of protein-characteristic band intensities showed that this SAM adsorbed streptavidin whereas it repelled bovine serum albumin, as had been expected from its structure. PMID:20418963

Fabrication of a Kilopixel Array of Superconducting Microcalorimeters with Microstripline Wiring

NASA Technical Reports Server (NTRS)

Chervenak, James

2012-01-01

A document describes the fabrication of a two-dimensional microcalorimeter array that uses microstrip wiring and integrated heat sinking to enable use of high-performance pixel designs at kilopixel scales (32 X 32). Each pixel is the high-resolution design employed in small-array test devices, which consist of a Mo/Au TES (transition edge sensor) on a silicon nitride membrane and an electroplated Bi/Au absorber. The pixel pitch within the array is 300 microns, where absorbers 290 microns on a side are cantilevered over a silicon support grid with 100-micron-wide beams. The high-density wiring and heat sinking are both carried by the silicon beams to the edge of the array. All pixels are wired out to the array edge. ECR (electron cyclotron resonance) oxide underlayer is deposited underneath the sensor layer. The sensor (TES) layer consists of a superconducting underlayer and a normal metal top layer. If the sensor is deposited at high temperature, the ECR oxide can be vacuum annealed to improve film smoothness and etch characteristics. This process is designed to recover high-resolution, single-pixel x-ray microcalorimeter performance within arrays of arbitrarily large format. The critical current limiting parts of the circuit are designed to have simple interfaces that can be independently verified. The lead-to-TES interface is entirely determined in a single layer that has multiple points of interface to maximize critical current. The lead rails that overlap the TES sensor element contact both the superconducting underlayer and the TES normal metal

Choosing a Silicone Encapsulant for Photovoltaic Applications

NASA Astrophysics Data System (ADS)

Velderrain, Michelle

2011-12-01

Growth in the solar industry has resulted in newer technologies, specifically concentrator photovoltaic (CPV) modules, to explore using new types of materials such as silicone encapsulants. CPV and LCPV module designs are to achieve the most efficient energy conversion possible however it is equally important to demonstrate long term reliability. Silicone is a material of interest due to its thermal stability and ability to absorb stresses incurred during thermal cycling. The refractive index of clear silicone adhesives is advantageous because it can be optimized using phenyl groups to match BK7 glass and other substrates to minimize light loss at the interfaces but it is relatively unknown how the optical properties change over time possibly yellowing in such a harsh environment. A 1.41 silicone encapsulant is compared to a 1.52 refractive index silicone. Optical Absorption (300 nm-1300 nm), Water Vapor Permeability, Moisture Absorption and effects of oxidation at elevated temperatures will be compared of these materials to aid the engineer in choosing a silicone for their CPV application. Non-phenyl containing 1.41 RI silicones have been used for several years for bonding solar arrays in the satellite industry. Phenyl groups on the siloxane polymer can change various properties of the silicone. Understanding how phenyl affects these properties allows the engineer to understand the benefits and risks when using a RI matching silicone to minimize light loss versus a non-phenyl containing silicone.

Alignment of the Pixel and SCT Modules for the 2004 ATLAS Combined Test Beam

DOE Office of Scientific and Technical Information (OSTI.GOV)

ATLAS Collaboration; Ahmad, A.; Andreazza, A.

2008-06-02

A small set of final prototypes of the ATLAS Inner Detector silicon tracking system(Pixel Detector and SemiConductor Tracker), were used to take data during the 2004 Combined Test Beam. Data were collected from runs with beams of different flavour (electrons, pions, muons and photons) with a momentum range of 2 to 180 GeV/c. Four independent methods were used to align the silicon modules. The corrections obtained were validated using the known momenta of the beam particles and were shown to yield consistent results among the different alignment approaches. From the residual distributions, it is concluded that the precision attained inmore » the alignmentof the silicon modules is of the order of 5 mm in their most precise coordinate.« less

Frequency non-degenerate phase-sensitive optical parametric amplification based on four-wave-mixing in width-modulated silicon waveguides.

PubMed

Wang, Zhaolu; Liu, Hongjun; Sun, Qibing; Huang, Nan; Li, Xuefeng

2014-12-15

A width-modulated silicon waveguide is proposed to realize non-degenerate phase sensitive optical parametric amplification. It is found that the relative phase at the input of the phase sensitive amplifier (PSA) θIn-PSA can be tuned by tailoring the width and length of the second segment of the width-modulated silicon waveguide, which will influence the gain in the parametric amplification process. The maximum gain of PSA is larger by 9 dB compared with the phase insensitive amplifier (PIA) gain, and the gain bandwidth of PSA is larger by 35 nm compared with the gain bandwidth of PIA. Our on-chip PSA can find important potential applications in highly integrated optical circuits for optical chip-to-chip communication and computers.

Microstrip antenna array with parasitic elements

NASA Technical Reports Server (NTRS)

Lee, Kai F.; Acosta, Roberto J.; Lee, Richard Q.

1987-01-01

Discussed is the design of a large microstrip antenna array in terms of subarrays consisting of one fed patch and several parasitic patches. The potential advantages of this design are discussed. Theoretical radiation patterns of a subarray in the configuration of a cross are presented.

Gigascale Silicon Photonic Transmitters Integrating HBT-based Carrier-injection Electroabsorption Modulator Structures

NASA Astrophysics Data System (ADS)

Fu, Enjin

Demand for more bandwidth is rapidly increasing, which is driven by data intensive applications such as high-definition (HD) video streaming, cloud storage, and terascale computing applications. Next-generation high-performance computing systems require power efficient chip-to-chip and intra-chip interconnect yielding densities on the order of 1Tbps/cm2. The performance requirements of such system are the driving force behind the development of silicon integrated optical interconnect, providing a cost-effective solution for fully integrated optical interconnect systems on a single substrate. Compared to conventional electrical interconnect, optical interconnects have several advantages, including frequency independent insertion loss resulting in ultra wide bandwidth and link latency reduction. For high-speed optical transmitter modules, the optical modulator is a key component of the optical I/O channel. This thesis presents a silicon integrated optical transmitter module design based on a novel silicon HBT-based carrier injection electroabsorption modulator (EAM), which has the merits of wide optical bandwidth, high speed, low power, low drive voltage, small footprint, and high modulation efficiency. The structure, mechanism, and fabrication of the modulator structure will be discussed which is followed by the electrical modeling of the post-processed modulator device. The design and realization of a 10Gbps monolithic optical transmitter module integrating the driver circuit architecture and the HBT-based EAM device in a 130nm BiCMOS process is discussed. For high power efficiency, a 6Gbps ultra-low power driver IC implemented in a 130nm BiCMOS process is presented. The driver IC incorporates an integrated 27-1 pseudo-random bit sequence (PRBS) generator for reliable high-speed testing, and a driver circuit featuring digitally-tuned pre-emphasis signal strength. With outstanding drive capability, the driver module can be applied to a wide range of carrier injection modulators and light-emitting diodes (LED) with drive voltage requirements below 1.5V. Measurement results show an optical link based on a 70MHz red LED work well at 300Mbps by using the pre-emphasis driver module. A traveling wave electrode (TWE) modulator structure is presented, including a novel design methodology to address process limitations imposed by a commercial silicon fabrication technology. Results from 3D full wave EM simulation demonstrate the application of the design methodology to achieve specifications, including phase velocity matching, insertion loss, and impedance matching. Results show the HBT-based TWE-EAM system has the bandwidth higher than 60GHz.

Facial synthesis of nanostructured ZnCo2O4 on carbon cloth for supercapacitor application

NASA Astrophysics Data System (ADS)

Patil, Swati J.; Park, Jungsung; Lee, Dong-Weon

2017-12-01

In this work, we have synthesized the ZnCo2O4 electrode by a facial one-step hydrothermal method on a carbon cloth for the supercapacitor application. The structural and phase purity of the prepared electrode material was confirmed by X-ray diffraction (XRD) technique. The surface morphology and elemental stoichiometry were studied using field emission scanning electron microscopy (FE-SEM). The FE-SEM micrograph illustrates that the ZnCo2O4 material is composed of microstrips with a ~0.5 μm width and length in micron uniformly covered the carbon cloth surface. The ZnCo2O4 electrode material further investigated for electrochemical analyses. The cyclic voltammetry results showed that the ZnCo2O4 microstrips electrode exhibited the highest specific capacitance of 1084 F/g at 2 mV/s scan rate. Remarkably, a maximum energy density of 12.5 Wh/kg was attained at a current density of 2 mA/cm2 with the power density of 3.6 kW/kg for the ZnCo2O4 microstrips electrode. Furthermore, the 96.2 % capacitive retention is obtained at a higher scan rate of 100 mV/s after 1000 CV cycles, indicating excellent cycling stability of the ZnCo2O4 microstrips electrode. The frequency-dependent rate capability and an ideal capacitive behaviour of the ZnCo2O4 microstrips electrode were analyzed using impedance analyses; a representing the ion diffusion structure of the material. These results show that the ZnCo2O4 microstrips electrode could be a promising material for supercapacitor application.

A Ka-Band (26 GHz) Circularly Polarized 2x2 Microstrip Patch Sub-Array with Compact Feed

NASA Technical Reports Server (NTRS)

Chrysler, Andrew; Furse, Cynthia; Simons, Rainee N.; Miranda, Felix A.

2017-01-01

A Ka-band (26 GHz) 2x2 array consisting of square-shaped microstrip patch antenna elements with two truncated corners for circular polarization (CP) is presented. The array is being developed for satellite communications.

Argus: a 16-pixel millimeter-wave spectrometer for the Green Bank Telescope

NASA Astrophysics Data System (ADS)

Sieth, Matthew; Devaraj, Kiruthika; Voll, Patricia; Church, Sarah; Gawande, Rohit; Cleary, Kieran; Readhead, Anthony C. S.; Kangaslahti, Pekka; Samoska, Lorene; Gaier, Todd; Goldsmith, Paul F.; Harris, Andrew I.; Gundersen, Joshua O.; Frayer, David; White, Steve; Egan, Dennis; Reeves, Rodrigo

2014-07-01

We report on the development of Argus, a 16-pixel spectrometer, which will enable fast astronomical imaging over the 85-116 GHz band. Each pixel includes a compact heterodyne receiver module, which integrates two InP MMIC low-noise amplifiers, a coupled-line bandpass filter and a sub-harmonic Schottky diode mixer. The receiver signals are routed to and from the multi-chip MMIC modules with multilayer high frequency printed circuit boards, which includes LO splitters and IF amplifiers. Microstrip lines on flexible circuitry are used to transport signals between temperature stages. The spectrometer frontend is designed to be scalable, so that the array design can be reconfigured for future instruments with hundreds of pixels. Argus is scheduled to be commissioned at the Robert C. Byrd Green Bank Telescope in late 2014. Preliminary data for the first Argus pixels are presented.

Field-effect modulation of the thermoelectric characteristics of silicon nanowires on plastic substrates.

PubMed

Choi, Jinyong; Jeon, Youngin; Cho, Kyoungah; Kim, Sangsig

2016-12-02

In this study, we demonstrate the substantial enhancement of the thermoelectric power factors of silicon nanowires (SiNWs) on plastic substrates achievable by field-effect modulation. The Seebeck coefficient and electrical conductivity are adjusted by varying the charge carrier concentration via electrical modulation with a gate voltage in the 0 to ±5 range, thus enhancing the power factors from 2.08 to 935 μW K -2 m -1 ) for n-type SiNWs, and from 453 to 944 μW K -2 m -1 ) for p-type SiNWs. The electrically modulated thermoelectric characteristics of SiNWs are analyzed and discussed.

Stripline feed for a microstrip array of patch elements with teardrop shaped probes

NASA Technical Reports Server (NTRS)

Huang, John (Inventor)

1990-01-01

A circularly polarized microstrip array antenna utilizing a honeycomb substrate made of dielectric material to support on one side the microstrip patch elements in an array, and on the other side a stripline circuit for feeding the patch elements in subarray groups of four with angular orientation and phase for producing circularly polarized radiation, preferably at a 0.degree., 90.degree., 180.degree. and 270.degree. relationship. The probe used for coupling each feed point in the stripline circuit to a microstrip patch element is teardrop shaped in order to introduce capacitance between the coupling probe and the metal sheet of the stripline circuit that serves as an antenna ground plane. The capacitance thus introduced tunes out inductance of the probe. The shape of the teardrop probe is not critical. The probe capacitance required is controlled by the maximum diameter for the teardrop shaped probe, which can be empirically determined for the operating frequency. An aluminum baffle around each subarray blocks out surface waves between subarrays.

Antennas for mobile satellite communications

NASA Technical Reports Server (NTRS)

Huang, John

1991-01-01

A NASA sponsored program, called the Mobile Satellite (MSAT) system, has prompted the development of several innovative antennas at L-band frequencies. In the space segment of the MSAT system, an efficient, light weight, circularly polarized microstrip array that uses linearly polarized elements was developed as a multiple beam reflector feed system. In the ground segment, a low-cost, low-profile, and very efficient microstrip Yagi array was developed as a medium-gain mechanically steered vehicle antenna. Circularly shaped microstrip patches excited at higher-order modes were also developed as low-gain vehicle antennas. A more recent effort called for the development of a 20/30 GHz mobile terminal antenna for future-generation mobile satellite communications. To combat the high insertion loss encountered at 20/30 GHz, series-fed Monolithic Microwave Integrated Circuit (MMIC) microstrip array antennas are currently being developed. These MMIC arrays may lead to the development of several small but high-gain Ka-band antennas for the Personal Access Satellite Service planned for the 2000s.

A dual frequency microstrip antenna for Ka band

NASA Technical Reports Server (NTRS)

Lee, R. Q.; Baddour, M. F.

1985-01-01

For fixed satellite communication systems at Ka band with downlink at 17.7 to 20.2 GHz and uplink at 27.5 to 30.0 GHz, the focused optics and the unfocused optics configurations with monolithic phased array feeds have often been used to provide multiple fixed and multiple scanning spot beam coverages. It appears that a dual frequency microstrip antenna capable of transmitting and receiving simultaneously is highly desirable as an array feed element. This paper describes some early efforts on the development and experimental testing of a dual frequency annular microstrip antenna. The antenna has potential application for use in conjunction with a monolithic microwave integrated circuit device as an active radiating element in a phased array of phased array feeds. The antenna is designed to resonate at TM sub 12 and TM sub 13 modes and tuned with a circumferential microstrip ring to vary the frequency ratio. Radiation characteristics at both the high and low frequencies are examined. Experimental results including radiating patterns and swept frequency measurements are presented.

Microstrip Yagi array antenna for mobile satellite vehicle application

NASA Technical Reports Server (NTRS)

Huang, John; Densmore, Arthur C.

1991-01-01

A novel antenna structure formed by combining the Yagi-Uda array concept and the microstrip radiator technique is discussed. This antenna, called the microstrip Yagi array, has been developed for the mobile satellite (MSAT) system as a low-profile, low-cost, and mechanically steered medium-gain land-vehicle antenna. With the antenna's active patches (driven elements) and parasitic patches (reflector and director elements) located on the same horizontal plane, the main beam of the array can be tilted, by the effect of mutual coupling, in the elevation direction providing optimal coverage for users in the continental United States. Because the parasitic patches are not connected to any of the lossy RF power distributing circuit the antenna is an efficient radiating system. With the complete monopulse beamforming and power distributing circuits etched on a single thin stripline board underneath the microstrip Yagi array, the overall L-band antenna system has achieved a very low profile for vehicle's rooftop mounting, as well as a low manufacturing cost. Experimental results demonstrate the performance of this antenna.

Broadband complex permeability characterization of magnetic thin films using shorted microstrip transmission-line perturbation

NASA Astrophysics Data System (ADS)

Liu, Yan; Chen, Linfeng; Tan, C. Y.; Liu, H. J.; Ong, C. K.

2005-06-01

A brief review of the methods used for broadband complex permeability measurement of magnetic thin films up to microwave frequencies is given. In particular, the working principles of the transmission-line perturbation methods for the characterization of magnetic thin films are discussed, with emphasis on short-circuited planar transmission-line perturbation methods. The algorithms for calculating the complex permeability of magnetic thin films for short-circuited planar transmission-line perturbation methods are analyzed. A shorted microstrip line is designed and fabricated as a prototype measurement fixture. The structure of the microstrip fixture and the corresponding measurement procedure are discussed in detail. A piece of 340 nm thick FeTaN thin film deposited on Si substrate using sputtering method is characterized using the microstrip fixture. An improved technique for obtaining permeability by using a saturation magnetization field is demonstrated here, and the results fit well with the Landau-Lifchitz-Gilbert theory. Approaches to extending this method to other aspects in the investigation of magnetic thin film are also discussed.

Radial microstrip slotline feed network for circular mobile communications array

NASA Technical Reports Server (NTRS)

Simons, Rainee N.; Kelly, Eron S.; Lee, Richard Q.; Taub, Susan R.

1994-01-01

In mobile and satellite communications there is a need for low cost and low profile antennas which have a toroidal pattern. Antennas that have been developed for mobile communications include a L-Band electronically steered stripline phased array, a Ka-Band mechanically steered elliptical reflector antenna and a Ka-Band printed dipole. In addition, a L-Band mechanically steered microstrip array, a L-Band microstrip phased array tracking antenna for mounting on a car roof and an X-Band radial line slotted waveguide antenna have been demonstrated. In the above electronically scanned printed arrays, the individual element radiates normally to the plane of the array and hence require a phase shifter to scan the beam towards the horizon. Scanning in the azimuth is by mechanical or electronic steering. An alternate approach is to mount microstrip patch radiators on the surface of a cone to achieve the required elevation angle. The array then scans in the azimuth by beam switching.

In-Situ Measurement of Power Loss for Crystalline Silicon Modules Undergoing Thermal Cycling and Mechanical Loading Stress Testing: Preprint

DOE Office of Scientific and Technical Information (OSTI.GOV)

Spataru, Sergiu; Hacke, Pater; Sera, Dezso

2015-09-15

We analyze the degradation of multi-crystalline silicon photovoltaic modules undergoing simultaneous thermal, mechanical, and humidity stress testing to develop a dark environmental chamber in-situ measurement procedure for determining module power loss. From the analysis we determine three main categories of failure modes associated with the module degradation consisting of: shunting, recombination losses, increased series resistance losses, and current mismatch losses associated with a decrease in photo-current generation by removal of some cell areas due to cell fractures. Based on the analysis, we propose an in-situ module power loss monitoring procedure that relies on dark current-voltage measurements taken during the stressmore » test, and initial and final module flash testing, to determine the power degradation characteristic of the module.« less

Solar photovoltaic systems

NASA Technical Reports Server (NTRS)

Forney, R. G.

1978-01-01

The Department of Energy's photovoltaic program is outlined. The main objective of the program is the development of low cost reliable terrestrial photovoltaic systems. A second objective is to foster widespread use of the system in residential, industrial and commercial application. The system is reviewed by examining each component; silicon solar cell, silicon solar cell modules, advanced development modules and power systems. Cost and applications of the system are discussed.

Electronics of the data acquisition system of the DANSS detector based on silicon photomultipliers

NASA Astrophysics Data System (ADS)

Svirida, D.

2018-01-01

The electronics of the data acquisition system based on silicon photomultipliers is briefly described. The elements and modules of the system were designed and constructed at ITEP especially for the DANSS detector. Examples of digitized signals obtained with the presented electronic modules and selected results on processing of the DANSS engineering data-taking run in spring 2016 are given.

Silicon Carbide (SiC) Device and Module Reliability, Performance of a Loop Heat Pipe Subjected to a Phase-Coupled Heat Input to an Acceleration Field

DTIC Science & Technology

2016-05-01

AFRL-RQ-WP-TR-2016-0108 SILICON CARBIDE (SiC) DEVICE AND MODULE RELIABILITY Performance of a Loop Heat Pipe Subjected to a Phase-Coupled... Heat Input to an Acceleration Field Kirk L. Yerkes (AFRL/RQQI) and James D. Scofield (AFRL/RQQE) Flight Systems Integration Branch (AFRL/RQQI...CARBIDE (SiC) DEVICE AND MODULE RELIABILITY Performance of a Loop Heat Pipe Subjected to a Phase-Coupled Heat Input to an Acceleration Field 5a

Analysis of microstrip patch antennas using finite difference time domain method

NASA Astrophysics Data System (ADS)

Reineix, Alain; Jecko, Bernard

1989-11-01

The study of microstrip patch antennas is directly treated in the time domain, using a modified finite-difference time-domain (FDTD) method. Assuming an appropriate choice of excitation, the frequency dependence of the relevant parameters can readily be found using the Fourier transform of the transient current. The FDTD method allows a rigorous treatment of one or several dielectric interfaces. Different types of excitation can be taken into consideration (coaxial, microstrip lines, etc.). Plotting the spatial distribution of the current density gives information about the resonance modes. The usual frequency-depedent parameters (input impedance, radiation pattern) are given for several examples.

Analytical and experimental procedures for determining propagation characteristics of millimeter-wave gallium arsenide microstrip lines

NASA Technical Reports Server (NTRS)

Romanofsky, Robert R.

1989-01-01

In this report, a thorough analytical procedure is developed for evaluating the frequency-dependent loss characteristics and effective permittivity of microstrip lines. The technique is based on the measured reflection coefficient of microstrip resonator pairs. Experimental data, including quality factor Q, effective relative permittivity, and fringing for 50-omega lines on gallium arsenide (GaAs) from 26.5 to 40.0 GHz are presented. The effects of an imperfect open circuit, coupling losses, and loading of the resonant frequency are considered. A cosine-tapered ridge-guide text fixture is described. It was found to be well suited to the device characterization.

A 32 GHz microstrip array antenna for microspacecraft application

NASA Technical Reports Server (NTRS)

Huang, J.

1994-01-01

JPL/NASA is currently developing microspacecraft systems for future deep space applications. One of the frequency bands being investigated for microspacecraft is the Ka-band (32 GHz), which can be used with smaller equipment and provides a larger bandwidth. This article describes the successful development of a circularly polarized microstrip array with 28 dBic of gain at 32 GHz. This antenna, which is thin, flat, and small, can be surface-mounted onto the microspacecraft and, hence, takes very little volume and mass of the spacecraft. The challenges in developing this antenna are minimizing the microstrip antenna's insertion loss and maintaining a reasonable frequency bandwidth.

System and method for liquid silicon containment

DOEpatents

Cliber, James A; Clark, Roger F; Stoddard, Nathan G; Von Dollen, Paul

2013-05-28

This invention relates to a system and a method for liquid silicon containment, such as during the casting of high purity silicon used in solar cells or solar modules. The containment apparatus includes a shielding member adapted to prevent breaching molten silicon from contacting structural elements or cooling elements of a casting device, and a volume adapted to hold a quantity of breaching molten silicon with the volume formed by a bottom and one or more sides.

System and method for liquid silicon containment

DOEpatents

Cliber, James A; Clark, Roger F; Stoddard, Nathan G; Von Dollen, Paul

2014-06-03

This invention relates to a system and a method for liquid silicon containment, such as during the casting of high purity silicon used in solar cells or solar modules. The containment apparatus includes a shielding ember adapted to prevent breaching molten silicon from contacting structural elements or cooling elements of a casting device, and a volume adapted to hold a quantity of breaching molten silicon with the volume formed by a bottom and one or more sides.

Microstrip Antenna Generates Circularly Polarized Beam

NASA Technical Reports Server (NTRS)

Huang, J.

1986-01-01

Circular microstrip antenna excited with higher order transverse magnetic (TM) modes generates circularly polarized, conical radiation patterns. Found both theoretically and experimentally that peak direction of radiation pattern is varied within wide angular range by combination of mode selection and loading substrate with materials of different dielectric constants.

An experimental investigation of microstrip properties on soft substrates from 2 to 40 GHz

NASA Technical Reports Server (NTRS)

Romanofsky, R. R.; Bhasin, K. B.; Ponchak, G. E.; Downey, A. N.; Connolly, D. J.

1985-01-01

Dispersion and loss characteristics of microstrip lines on 10 mil and 31 mil electrodeposited and electroless copper clad-Teflon substrates were experimentally obtained from 2 to 40 GHz. The roles of surface roughness and radiation in total loss were examined.

Theoretical Studies of Microstrip Antennas : Volume I, General Design Techniques and Analyses of Single and Coupled Elements

DOT National Transportation Integrated Search

1979-09-01

Volume 1 of Theoretical Studies of Microstrip Antennas deals with general techniques and analyses of single and coupled radiating elements. Specifically, we review and then employ an important equivalence theorem that allows a pair of vector potentia...

Nonlinear Fano-Resonant Dielectric Metasurfaces

DOE PAGES

Yang, Yuanmu; Wang, Wenyi; Boulesbaa, Abdelaziz; ...

2015-10-26

Strong nonlinear light matter interaction is highly sought-after for a variety of applications including lasing and all-optical light modulation. Recently, resonant plasmonic structures have been considered promising candidates for enhancing nonlinear optical processes due to their ability to greatly enhance the optical near-field; however, their small mode volumes prevent the inherently large nonlinear susceptibility of the metal from being efficiently exploited. We present an alternative approach that utilizes a Fano-resonant silicon metasurface. The metasurface results in strong near-field enhancement within the volume of the silicon resonator while minimizing two photon absorption. Here, we measure a third harmonic generation enhancement factormore » of 1.5 105 with respect to an unpatterned silicon film and an absolute conversion efficiency of 1.2 10 6 with a peak pump intensity of 3.2 GW cm 2. The enhanced nonlinearity, combined with a sharp linear transmittance spectrum, results in transmission modulation with a modulation depth of 36%. Finally, the modulation mechanism is studied by pump probe experiments« less

High-Q photonic resonators and electro-optic coupling using silicon-on-lithium-niobate

PubMed Central

Witmer, Jeremy D.; Valery, Joseph A.; Arrangoiz-Arriola, Patricio; Sarabalis, Christopher J.; Hill, Jeff T.; Safavi-Naeini, Amir H.

2017-01-01

Future quantum networks, in which superconducting quantum processors are connected via optical links, will require microwave-to-optical photon converters that preserve entanglement. A doubly-resonant electro-optic modulator (EOM) is a promising platform to realize this conversion. Here, we present our progress towards building such a modulator by demonstrating the optically-resonant half of the device. We demonstrate high quality (Q) factor ring, disk and photonic crystal resonators using a hybrid silicon-on-lithium-niobate material system. Optical Q factors up to 730,000 are achieved, corresponding to propagation loss of 0.8 dB/cm. We also use the electro-optic effect to modulate the resonance frequency of a photonic crystal cavity, achieving a electro-optic modulation coefficient between 1 and 2 pm/V. In addition to quantum technology, we expect that our results will be useful both in traditional silicon photonics applications and in high-sensitivity acousto-optic devices. PMID:28406177

30GHz Ge electro-absorption modulator integrated with 3 μm silicon-on-insulator waveguide.

PubMed

Feng, Ning-Ning; Feng, Dazeng; Liao, Shirong; Wang, Xin; Dong, Po; Liang, Hong; Kung, Cheng-Chih; Qian, Wei; Fong, Joan; Shafiiha, Roshanak; Luo, Ying; Cunningham, Jack; Krishnamoorthy, Ashok V; Asghari, Mehdi

2011-04-11

We demonstrate a compact waveguide-based high-speed Ge electro-absorption (EA) modulator integrated with a single mode 3 µm silicon-on-isolator (SOI) waveguide. The Ge EA modulator is based on a horizontally-oriented p-i-n structure butt-coupled with a deep-etched silicon waveguide, which transitions adiabatically to a shallow-etched single mode large core SOI waveguide. The demonstrated device has a compact active region of 1.0 × 45 µm(2), a total insertion loss of 2.5-5 dB and an extinction ratio of 4-7.5 dB over a wavelength range of 1610-1640 nm with -4V(pp) bias. The estimated Δα/α value is in the range of 2-3.3. The 3 dB bandwidth measurements show that the device is capable of operating at more than 30 GHz. Clear eye-diagram openings at 12.5 Gbps demonstrates large signal modulation at high transmission rate. © 2011 Optical Society of America

Modulation of thermal conductivity in kinked silicon nanowires: phonon interchanging and pinching effects.

PubMed

Jiang, Jin-Wu; Yang, Nuo; Wang, Bing-Shen; Rabczuk, Timon

2013-04-10

We perform molecular dynamics simulations to investigate the reduction of the thermal conductivity by kinks in silicon nanowires. The reduction percentage can be as high as 70% at room temperature. The temperature dependence of the reduction is also calculated. By calculating phonon polarization vectors, two mechanisms are found to be responsible for the reduced thermal conductivity: (1) the interchanging effect between the longitudinal and transverse phonon modes and (2) the pinching effect, that is, a new type of localization, for the twisting and transverse phonon modes in the kinked silicon nanowires. Our work demonstrates that the phonon interchanging and pinching effects, induced by kinking, are brand-new and effective ways in modulating heat transfer in nanowires, which enables the kinked silicon nanowires to be a promising candidate for thermoelectric materials.

Microstrip Patch Sensor for Salinity Determination.

PubMed

Lee, Kibae; Hassan, Arshad; Lee, Chong Hyun; Bae, Jinho

2017-12-18

In this paper, a compact microstrip feed inset patch sensor is proposed for measuring the salinities in seawater. The working principle of the proposed sensor depends on the fact that different salinities in liquid have different relative permittivities and cause different resonance frequencies. The proposed sensor can obtain better sensitivity to salinity changes than common sensors using conductivity change, since the relative permittivity change to salinity is 2.5 times more sensitive than the conductivity change. The patch and ground plane of the proposed sensor are fabricated by conductive copper spray coating on the masks made by 3D printer. The fabricated patch and the ground plane are bonded to a commercial silicon substrate and then attached to 5 mm-high chamber made by 3D printer so that it contains only 1 mL seawater. For easy fabrication and testing, the maximum resonance frequency was selected under 3 GHz and to cover salinities in real seawater, it was assumed that the salinity changes from 20 to 35 ppt. The sensor was designed by the finite element method-based ANSYS high-frequency structure simulator (HFSS), and it can detect the salinity with 0.01 ppt resolution. The designed sensor has a resonance frequency separation of 37.9 kHz and reflection coefficients under -20 dB at the resonant frequencies. The fabricated sensor showed better performance with average frequency separation of 48 kHz and maximum reflection coefficient of -35 dB. By comparing with the existing sensors, the proposed compact and low-cost sensor showed a better detection capability. Therefore, the proposed patch sensor can be utilized in radio frequency (RF) tunable sensors for salinity determination.

Rigorous analysis of thick microstrip antennas and wire antennas embedded in a substrate

NASA Astrophysics Data System (ADS)

Smolders, A. B.

1992-07-01

An efficient and rigorous method for the analysis of electrically thick rectangular microstrip antennas and wire antennas with a dielectric cover is presented. The method of moments is used in combination with the exact spectral domain Green's function in order to find the unknown currents on the antenna. The microstrip antenna is fed by a coaxial cable. A proper model of the feeding coaxial structure is used. In addition, a special attachment mode was applied to ensure continuity of current at the patch-coax transition. The efficiency of the method of moments is improved by using the so called source term extraction technique, where a great part of the infinite integrals involved with the method of moment formulation is calculated analytically. Computation time can be saved by selecting a set of basis functions that describes the current distribution on the patch and probe in an accurate way using only a few terms of this set. Thick microstrip antennas have broadband characteristics. However, a proper match to 50 Ohms is often difficult. This matching problem can be avoided by using a slightly different excitation structure. The patch is now electromagnetically coupled to the feeding probe. A bandwidth of more than 40 can easily be obtained for this type of microstrip antenna. The price to be paid is a degradation of the radiation characteristics.

Stripline/Microstrip Transition in Multilayer Circuit Board

NASA Technical Reports Server (NTRS)

Epp, Larry; Khan, Abdur

2005-01-01

A stripline-to-microstrip transition has been incorporated into a multilayer circuit board that supports a distributed solid-state microwave power amplifier, for the purpose of coupling the microwave signal from a buried-layer stripline to a top-layer microstrip. The design of the transition could be adapted to multilayer circuit boards in such products as cellular telephones (for connecting between circuit-board signal lines and antennas), transmitters for Earth/satellite communication systems, and computer mother boards (if processor speeds increase into the range of tens of gigahertz). The transition is designed to satisfy the following requirements in addition to the basic coupling requirement described above: (1) The transition must traverse multiple layers, including intermediate layers that contain DC circuitry. (2) The transition must work at a frequency of 32 GHz with low loss and low reflection. (3) The power delivered by the transition to top-layer microstrip must be split equally in opposite directions along the microstrip. Referring to the figure, this amounts to a requirement that when power is supplied to input port 1, equal amounts of power flow through output ports 2 and 3. (4) The signal-line via that is necessarily a part of such a transition must not be what is known in the art as a blind via; that is, it must span the entire thickness of the circuit board.

Neutron sensitivity of 6Li-based suspended foil microstrip neutron detectors using Schott Borofloat® 33 microstrip electrodes

NASA Astrophysics Data System (ADS)

Edwards, Nathaniel S.; Montag, Benjamin W.; Henson, Luke C.; Bellinger, Steven L.; Nichols, Daniel M.; Reichenberger, Michael A.; Fronk, Ryan G.; McGregor, Douglas S.

2018-06-01

6Li foils, each 75-μm thick, were positioned between a Schott Borofloat® 33 microstrip electrode and a planar drift electrode to construct suspended foil microstrip neutron detectors. MCNP6 simulations of two detector configurations, one containing a single 6Li foil and the other containing five 6Li foils, indicated expected maximum intrinsic thermal-neutron detection efficiencies of 18.36% and 54.08%, respectively. For comparison, the intrinsic thermal-neutron detection efficiency as a function of thermal-neutron beam position along the foil span was experimentally measured for both detector configurations. A non-uniform intrinsic thermal-neutron detection efficiency distribution was observed along the span of the 6Li foil(s) between the microstrip and drift electrodes. Maximum intrinsic thermal-neutron detection efficiencies of 12.58 ± 0.15% and 29.75 ± 0.26% for the single and five 6Li foils were measured, respectively. Gamma-ray rejection ratios of 6.46 × 10-5 ± 4.32 × 10-7 and 7.96 × 10-5 ± 4.65 × 10-7 were also measured, respectively, for a 137Cs exposure rate of 50 mR h-1. All measurements were conducted with the 6Li foil(s) contained within a sealed aluminum enclosure pressurized with 10 psig of P-10 gas.

Nonplanar linearly tapered slot antenna with balanced microstrip feed

NASA Technical Reports Server (NTRS)

Simons, Rainee N.; Lee, Richard Q.; Perl, Thomas D.

1992-01-01

A nonplanar linearly tapered slot antenna (LTSA) has been fabricated and tested at frequencies from 8 to 32 giga-Hz. The LTSA is excited by a broadband balanced microstrip transformer. The measured results include the input term return loss as well as the radiation pattern of the antenna.

Thin-film reliability and engineering overview

NASA Technical Reports Server (NTRS)

Ross, R. G., Jr.

1984-01-01

The reliability and engineering technology base required for thin film solar energy conversions modules is discussed. The emphasis is on the integration of amorphous silicon cells into power modules. The effort is being coordinated with SERI's thin film cell research activities as part of DOE's Amorphous Silicon Program. Program concentration is on temperature humidity reliability research, glass breaking strength research, point defect system analysis, hot spot heating assessment, and electrical measurements technology.

Failure Analysis to Identify Thermal Runaway of Bypass Diodes in Fielded Modules

DOE Office of Scientific and Technical Information (OSTI.GOV)

Xiao, Chuanxiao, Uchida, Yasunori; Johnston, Steve; Hacke, Peter

We studied a bypass diode recuperated from fielded modules in a rooftop installation to determine the failure mechanism. The field-failed diode showed similar characteristics to thermal runaway, specifically X-ray tomography evidence of migrated metal. We also observed burn marks on the silicon surface like those lab-stressed for thermal runaway. Reaction products are more soluble than silicon and the surface is oxygen rich.

Thin-film reliability and engineering overview

NASA Astrophysics Data System (ADS)

Ross, R. G., Jr.

1984-10-01

The reliability and engineering technology base required for thin film solar energy conversions modules is discussed. The emphasis is on the integration of amorphous silicon cells into power modules. The effort is being coordinated with SERI's thin film cell research activities as part of DOE's Amorphous Silicon Program. Program concentration is on temperature humidity reliability research, glass breaking strength research, point defect system analysis, hot spot heating assessment, and electrical measurements technology.

Develop Silicone Encapsulation Systems for Terrestrial Silicon Solar Arrays

NASA Technical Reports Server (NTRS)

1979-01-01

The results of a study for Task 3 of the Low Cost Solar Array Project, directed toward the development of a cost effective encapsulation system for photovoltaic modules using silicon based materials, are reported. Results of the following are discussed: (1) weather-ometer stressing vs. weathering history of silicon and silicon modified materials; (2) humidity/temperature cycling exposure; (3) exposure at high humidity/high temperature; (4) outdoor exposure stress; (5) thermal cycling stress; and (6) UV screening agents. The plans for the next quarter are outlined.

Low cost solar array project. Experimental process system development unit for producing semiconductor-grade silicon using the silane-to-silicon process

NASA Technical Reports Server (NTRS)

1980-01-01

Technical activities are reported in the design of process, facilities, and equipment for producing silicon at a rate and price comensurate with production goals for low cost solar cell modules. The silane-silicone process has potential for providing high purity poly-silicon on a commercial scale at a price of fourteen dollars per kilogram by 1986, (1980 dollars). Commercial process, economic analysis, process support research and development, and quality control are discussed.

Plate-slot polymer waveguide modulator on silicon-on-insulator.

PubMed

Qiu, Feng; Spring, Andrew M; Hong, Jianxun; Yokoyama, Shiyoshi

2018-04-30

Electro-optic (EO) modulators are vital for efficient "electrical to optical" transitions and high-speed optical interconnects. In this work, we applied an EO polymer to demonstrate modulators on silicon-on-insulator substrates. The fabricated Mach-Zehnder interferometer (MZI) and ring resonator consist of a Si and TiO 2 slot, in which the EO polymer was embedded to realize a low-driving and large bandwidth modulation. The designed optical and electrical constructions are able to provide a highly concentrated TM mode with low propagation loss and effective EO properties. The fabricated MZI modulator shows a π-voltage-length product of 0.66 V·cm and a 3-dB bandwidth of 31 GHz. The measured EO activity is advantageous to exploit the ring modulator with a resonant tunability of 0.065 nm/V and a 3-dB modulation bandwidth up to 13 GHz.

Characteristic analysis of a photoexcited metamaterial perfect absorber at terahertz frequencies

NASA Astrophysics Data System (ADS)

Bing, Pibin; Huang, Shichao; Li, Zhongyang; Yu, Zhou; Lu, Ying; Yao, Jianquan

2017-06-01

The absorption characteristics of a photoexcited metamaterial absorber at terahertz frequencies were analyzed in this study. Filling photosensitive semiconductor silicon into the gap between the resonator arms leads to modulation of its electromagnetic response through a pump beam which changes conductivity of silicon. Comparisons of terahertz absorbing properties which were caused by different thicknesses and dielectric constants of polyimide, cell sizes and widths of SRRs, and lengths and conductivities of the photosensitive silicon, were studied by using Finite Difference Time Domain (FDTD) from 0.4 THz to 1.6 THz. The results of this study will facilitate the design and preparation of terahertz modulator, filters and absorbers.

Gigahertz speed operation of epsilon-near-zero silicon photonic modulators

DOE PAGES

Wood, Michael G.; Campione, Salvatore; Parameswaran, S.; ...

2018-02-21

Opmore » tical communication systems increasingly require electro-optical modulators that deliver high modulation speeds across a large optical bandwidth with a small device footprint and a CMOS-compatible fabrication process. Although silicon photonic modulators based on transparent conducting oxides (TCOs) have shown promise for delivering on these requirements, modulation speeds to date have been limited. Here, we describe the design, fabrication, and performance of a fast, compact electroabsorption modulator based on TCOs. The modulator works by using bias voltage to increase the carrier density in the conducting oxide, which changes the permittivity and hence optical attenuation by almost 10 dB. Under bias, light is tightly confined to the conducting oxide layer through nonresonant epsilon-near-zero (ENZ) effects, which enable modulation over a broad range of wavelengths in the telecommunications band. Our approach features simple integration with passive silicon waveguides, the use of stable inorganic materials, and the ability to modulate both transverse electric and magnetic polarizations with the same device design. Using a 4-μm-long modulator and a drive voltage of 2 V p p , we demonstrate digital modulation at rates of 2.5 Gb/s. We report broadband operation with a 6.5 dB extinction ratio across the 1530–1590 nm band and a 10 dB insertion loss. This work verifies that high-speed ENZ devices can be created using conducting oxide materials and paves the way for additional technology development that could have a broad impact on future optical communications systems.« less

Gigahertz speed operation of epsilon-near-zero silicon photonic modulators

DOE Office of Scientific and Technical Information (OSTI.GOV)

Wood, Michael G.; Campione, Salvatore; Parameswaran, S.

Opmore » tical communication systems increasingly require electro-optical modulators that deliver high modulation speeds across a large optical bandwidth with a small device footprint and a CMOS-compatible fabrication process. Although silicon photonic modulators based on transparent conducting oxides (TCOs) have shown promise for delivering on these requirements, modulation speeds to date have been limited. Here, we describe the design, fabrication, and performance of a fast, compact electroabsorption modulator based on TCOs. The modulator works by using bias voltage to increase the carrier density in the conducting oxide, which changes the permittivity and hence optical attenuation by almost 10 dB. Under bias, light is tightly confined to the conducting oxide layer through nonresonant epsilon-near-zero (ENZ) effects, which enable modulation over a broad range of wavelengths in the telecommunications band. Our approach features simple integration with passive silicon waveguides, the use of stable inorganic materials, and the ability to modulate both transverse electric and magnetic polarizations with the same device design. Using a 4-μm-long modulator and a drive voltage of 2 V p p , we demonstrate digital modulation at rates of 2.5 Gb/s. We report broadband operation with a 6.5 dB extinction ratio across the 1530–1590 nm band and a 10 dB insertion loss. This work verifies that high-speed ENZ devices can be created using conducting oxide materials and paves the way for additional technology development that could have a broad impact on future optical communications systems.« less

Silicon pore optics for the international x-ray observatory

NASA Astrophysics Data System (ADS)

Wille, E.; Wallace, K.; Bavdaz, M.; Collon, M. J.; Günther, R.; Ackermann, M.; Beijersbergen, M. W.; Riekerink, M. O.; Blom, M.; Lansdorp, B.; de Vreede, L.

2017-11-01

Lightweight X-ray Wolter optics with a high angular resolution will enable the next generation of X-ray telescopes in space. The International X-ray Observatory (IXO) requires a mirror assembly of 3 m2 effective area (at 1.5 keV) and an angular resolution of 5 arcsec. These specifications can only be achieved with a novel technology like Silicon Pore Optics, which is developed by ESA together with a consortium of European industry. Silicon Pore Optics are made of commercial Si wafers using process technology adapted from the semiconductor industry. We present the manufacturing process ranging from single mirror plates towards complete focusing mirror modules mounted in flight configuration. The performance of the mirror modules is tested using X-ray pencil beams or full X-ray illumination. In 2009, an angular resolution of 9 arcsec was achieved, demonstrating the improvement of the technology compared to 17 arcsec in 2007. Further development activities of Silicon Pore Optics concentrate on ruggedizing the mounting system and performing environmental tests, integrating baffles into the mirror modules and assessing the mass production.

A CBLT and MCST capable VME slave interface

DOE Office of Scientific and Technical Information (OSTI.GOV)

Wuerthwein, F.; Strohman, C.; Honscheid, K.

1996-12-31

We report on the development of a VME slave interface for the CLEO III detector implemented in an ALTERA EPM7256 CPLD. This includes the first implementation of the chained block transfer protocol (CBLT) and multi-cast cycles (MCST) as defined by the VME-P task group of VIPA. Within VME64 there is no operation that guarantees efficient readout of large blocks of data that are sparsely distributed among a series of slave modules in a VME crate. This has led the VME-P task group of VIPA to specify protocols that enable a master to address many slaves at a single address. Whichmore » slave is to drive the data bus is determined by a token passing mechanism that uses the *IACKOUT, *IACKIN daisy chain. This protocol requires no special features from the master besides conformance to VME64. Non-standard features are restricted to the VME slave interface. The CLEO III detector comprises {approximately}400,000 electronic channels that have to be digitized, sparsified, and stored within 20{mu}s in order to incur less than 2% dead time at an anticipated trigger rate of 1000Hz. 95% of these channels are accounted for by only two detector subsystems, the silicon microstrip detector (125,000 channels), and the ring imaging Cerenkov detector (RICH) (230,400 channels). After sparsification either of these two detector subsystems is expected to provide event fragments on the order of 10KBytes, spread over 4, and 8 VME crates, respectively. We developed a chip set that sparsifies, tags, and stores the incoming digital data on the data boards, and includes a VME slave interface that implements MCST and CUT protocols. In this poster, we briefly describe this chip set and then discuss the VME slave interface in detail.« less

Extreme-Environment Silicon-Carbide (SiC) Wireless Sensor Suite

NASA Technical Reports Server (NTRS)

Yang, Jie

2015-01-01

Phase II objectives: Develop an integrated silicon-carbide wireless sensor suite capable of in situ measurements of critical characteristics of NTP engine; Compose silicon-carbide wireless sensor suite of: Extreme-environment sensors center, Dedicated high-temperature (450 deg C) silicon-carbide electronics that provide power and signal conditioning capabilities as well as radio frequency modulation and wireless data transmission capabilities center, An onboard energy harvesting system as a power source.

The all-optical modulator in dielectric-loaded waveguide with graphene-silicon heterojunction structure

NASA Astrophysics Data System (ADS)

Sun, Feiying; Xia, Liangping; Nie, Changbin; Shen, Jun; Zou, Yixuan; Cheng, Guiyu; Wu, Hao; Zhang, Yong; Wei, Dongshan; Yin, Shaoyun; Du, Chunlei

2018-04-01

All-optical modulators based on graphene show great promise for on-chip optical interconnects. However, the modulation performance of all-optical modulators is usually based on the interaction between graphene and the fiber, limiting their potential in high integration. Based on this point, an all-optical modulator in a dielectric-loaded waveguide (DLW) with a graphene-silicon heterojunction structure (GSH) is proposed. The DLW raises the waveguide mode, which provides a strong light-graphene interaction. Sufficient tuning of the graphene Fermi energy beyond the Pauli blocking effect is obtained with the presented GSH structure. Under the modulation light with a wavelength of 532 nm and a power of 60 mW, a modulation efficiency of 0.0275 dB µm-1 is achieved for light with a communication wavelength of 1.55 µm in the experiment. This modulator has the advantage of having a compact footprint, which may make it a candidate for achieving a highly integrated all-optical modulator.

Planar slot coupled microwave hybrid

DOEpatents

Petter, Jeffrey K.

1991-01-01

A symmetrical 180.degree. microwave hybrid is constructed by opening a slot line in a ground plane below a conducting strip disposed on a dielectric substrate, creating a slot coupled conductor. Difference signals propagating on the slot coupled conductor are isolated on the slot line leaving sum signals to propagate on the microstrip. The difference signal is coupled from the slot line onto a second microstrip line for transmission to a desired location. The microstrip branches in a symmetrical fashion to provide the input/output ports of the 180.degree. hybrid. The symmetry of the device provides for balance and isolation between sum and difference signals, and provides an advantageous balance between the power handling capabilities and the bandwidth of the device.

Thin conformal antenna array for microwave power conversions

NASA Technical Reports Server (NTRS)

Dickinson, R. M. (Inventor)

1978-01-01

A structure of a circularly polarized, thin conformal, antenna array which may be mounted integrally with the skin of an aircraft employs microstrip elliptical elements and interconnecting feed lines spaced from a circuit ground plane by a thin dielectric layer. The feed lines are impedance matched to the elliptical antenna elements by selecting a proper feedpoint inside the periphery of the elliptical antenna elements. Diodes connected between the feed lines and the ground plane rectify the microwave power, and microstrip filters (low pass) connected in series with the feed lines provide dc current to a microstrip bus. Low impedance matching strips are included between the elliptical elements and the rectifying and filtering elements.

Compact ultra wide band microstrip bandpass filter based on multiple-mode resonator and modified complementary split ring resonator.

PubMed

Marcotegui, J Antonio; Illescas, Jesús Miguel; Estevez, Aritz; Falcone, Francisco

2013-01-01

A new class of broadband microstrip filters for Ultra Wide Band (UWB) applications is proposed. In the design, different stages of parallel-coupled microstrip line and other stages with a Modified Complementary Split Ring Resonator (MCSRR)-a concept proposed here for the first time-are adjusted to obtain the desired response with broadband, sharp rejection, low insertion loss, and low return loss. Full wave simulation results as well as measurement results from fabricated prototypes are presented, showing good agreement. The proposed technique offers a new alternative to implement low-cost high-performance filter devices, applicable to a wide range of communication systems.

Compact Ultra Wide Band Microstrip Bandpass Filter Based on Multiple-Mode Resonator and Modified Complementary Split Ring Resonator

PubMed Central

Marcotegui, J. Antonio; Illescas, Jesús Miguel; Estevez, Aritz

2013-01-01

A new class of broadband microstrip filters for Ultra Wide Band (UWB) applications is proposed. In the design, different stages of parallel-coupled microstrip line and other stages with a Modified Complementary Split Ring Resonator (MCSRR)—a concept proposed here for the first time—are adjusted to obtain the desired response with broadband, sharp rejection, low insertion loss, and low return loss. Full wave simulation results as well as measurement results from fabricated prototypes are presented, showing good agreement. The proposed technique offers a new alternative to implement low-cost high-performance filter devices, applicable to a wide range of communication systems. PMID:24319366

Computer Aided Approach to the Design of Y-Junction Stripline and Microstrip Ferrite Circulators

DTIC Science & Technology

1992-05-05

einO (36) n Jn(kr) J(k) A " kr J~r Finally, the Green’s function is 7 R. E. NEIDERT G(r,op ; R#¢) = X + Y X= j ZeJo(kr) 2 x Jo(kr) (37) IC n Jn(kR) - ’ n ...AD-A251 337 NRL/R ,-92-938I IIIII~ l l li i 1 11 [IIIfll li Computer Aided Approach to the Design of Y -Junction Stripline and Microstrip Ferrite...Aided Approach to the Design of Y -Junction - 62234N Stripline and Microstrip Ferrite Circulators PR - RS34R2 6. AUTHOR(S) WU - 2535-0 Robert E

Ultralow drive voltage silicon traveling-wave modulator.

PubMed

Baehr-Jones, Tom; Ding, Ran; Liu, Yang; Ayazi, Ali; Pinguet, Thierry; Harris, Nicholas C; Streshinsky, Matt; Lee, Poshen; Zhang, Yi; Lim, Andy Eu-Jin; Liow, Tsung-Yang; Teo, Selin Hwee-Gee; Lo, Guo-Qiang; Hochberg, Michael

2012-05-21

There has been great interest in the silicon platform as a material system for integrated photonics. A key challenge is the development of a low-power, low drive voltage, broadband modulator. Drive voltages at or below 1 Vpp are desirable for compatibility with CMOS processes. Here we demonstrate a CMOS-compatible broadband traveling-wave modulator based on a reverse-biased pn junction. We demonstrate operation with a drive voltage of 0.63 Vpp at 20 Gb/s, a significant improvement in the state of the art, with an RF energy consumption of only 200 fJ/bit.

Large Scale Beam-Tests of the Silicon and Scintillator-SiPM Modules for the CMS High Granularity Calorimeter at the HL-LHC

NASA Astrophysics Data System (ADS)

Jain, Shilpi

The High Granularity Calorimeter (HGCAL) will replace the existing CMS endcap calorimeters during the High Luminosity run of the LHC (HL-LHC) era. The electromagnetic part, as well as the first layers of the hadronic part, foresees around 600 square metres of silicon sensors as the active material. The remainder of the HGCAL, in the lower radiation environment, will use plastic scintillators with on-tile silicon photomultiplier (SiPM) readout. Prototype hexagonal silicon modules, featuring a new ASIC (Skiroc2-CMS), together with a modified version of the scintillator-SiPM CALICE AHCAL, have been tested in beams at CERN. This setup represents a full slice through HGCAL. Results from MIP calibration, energy resolution, electromagnetic and hadronic shower-shapes are presented using electrons, pions and muons.

A MoTe2 based light emitting diode and photodetector for silicon photonic integrated circuits

NASA Astrophysics Data System (ADS)

Bie, Ya-Qing; Heuck, M.; Grosso, G.; Furchi, M.; Cao, Y.; Zheng, J.; Navarro-Moratalla, E.; Zhou, L.; Taniguchi, T.; Watanabe, K.; Kong, J.; Englund, D.; Jarillo-Herrero, P.

A key challenge in photonics today is to address the interconnects bottleneck in high-speed computing systems. Silicon photonics has emerged as a leading architecture, partly because many components such as waveguides, interferometers and modulators, could be integrated on silicon-based processors. However, light sources and photodetectors present continued challenges. Common approaches for light source include off-chip or wafer-bonded lasers based on III-V materials, but studies show advantages for directly modulated light sources. The most advanced photodetectors in silicon photonics are based on germanium growth which increases system cost. The emerging two dimensional transition metal dichalcogenides (TMDs) offer a path for optical interconnects components that can be integrated with the CMOS processing by back-end-of-the-line processing steps. Here we demonstrate a silicon waveguide-integrated light source and photodetector based on a p-n junction of bilayer MoTe2, a TMD semiconductor with infrared band gap. The state-of-the-art fabrication technology provides new opportunities for integrated optoelectronic systems.

Use of microstrip patch antennas in grain permittivity measurement

USGS Publications Warehouse

El Sabbagh, M.A.; Ramahi, O.M.; Trabelsi, S.; Nelson, S.O.; Khan, L.

2003-01-01

In this paper, a compact size free-space setup is proposed for the measurement of complex permittivity of granular materials. The horn antennas in the conventional setup are replaced by microstrip patch antennas which is a step toward system miniaturization. The experimental results obtained are in good agreement with those obtained with horn antennas.

High performance millimeter-wave microstrip circulators and isolators

NASA Technical Reports Server (NTRS)

Shih, Ming; Pan, J. J.

1990-01-01

Millimeter wave systems, phased array antennas, and high performance components all require wideband circulators (and isolators) to perform diplexing and switching, to improve isolation and Voltage Standing Wave Ratio (VSWR), and to construct IMPATT diode reflection amplifiers. Presently, most of the millimeter-wave circulators and isolators are available in the configurations of waveguide or stripline, both of which suffer from the shortcomings of bulky size/weight, narrow bandwidth, and poor compatibility with monolithic millimeter-wave integrated circuits (MMIC). MMW microstrip circulators/isolators can eliminate or improve these shortcomings. Stub-tuned microstrip circulator configuration were developed utilizing the electromagnetic fields perturbation technique, the adhesion problems of microstrip metallization on new ferrite substrate were overcome, the fabrication, assembly, packaging techniques were improved, and then successfully designed, fabricated a Ka band circulator which has isolation and return loss of greater than 16dB, insertion loss less than 0.7dB. To assess the steady and reliable performance of the circulator, a temperature cycling test was done over the range of -20 to +50 C for 3 continuous cycles and found no significant impact or variation of circulator performance.

Electric-field distribution near rectangular microstrip radiators for hyperthermia heating: theory versus experiment in water.

PubMed

Underwood, H R; Peterson, A F; Magin, R L

1992-02-01

A rectangular microstrip antenna radiator is investigated for its near-zone radiation characteristics in water. Calculations of a cavity model theory are compared with the electric-field measurements of a miniature nonperturbing diode-dipole E-field probe whose 3 mm tip was positioned by an automatic three-axis scanning system. These comparisons have implications for the use of microstrip antennas in a multielement microwave hyperthermia applicator. Half-wavelength rectangular microstrip patches were designed to radiate in water at 915 MHz. Both low (epsilon r = 10) and high (epsilon r = 85) dielectric constant substrates were tested. Normal and tangential components of the near-zone radiated electric field were discriminated by appropriate orientation of the E-field probe. Low normal to transverse electric-field ratios at 3.0 cm depth indicate that the radiators may be useful for hyperthermia heating with an intervening water bolus. Electric-field pattern addition from a three-element linear array of these elements in water indicates that phase and amplitude adjustment can achieve some limited control over the distribution of radiated power.

Double-layered microstrip metamaterial beam scanning leaky wave antenna with consistent gain and low cross-polarization

NASA Astrophysics Data System (ADS)

An, Yong-li; Tan, Yi-li; Zhang, Hong-bo; Wu, Guo-cheng

2017-12-01

In this paper, a novel double-layered microstrip metamaterial beam scanning leaky wave antenna (LWA) is proposed and investigated to achieve consistent gain and low cross-polarization. Thanks to the continuous phase constant changing from negative to positive values over the passband of the double-layered microstrip metamaterial, the proposed LWA, which consists of 20 identical microstrip metamaterial unit cells, can obtain a continuous beam scanning property from backward to forward directions. The proposed LWA is fabricated and measured. The measured results show that the fabricated antenna obtains a continuous beam scanning angle of 140° over the operating frequency band of 3.80-5.25 GHz (32%), the measured 3 dB gain bandwidth is 30.17% with maximum gain of 11.7 dB. Besides, the measured cross-polarization of the fabricated antenna keeps at a level of at least 30 dB below the co-polarization across the entire radiation region. Moreover, the measured and simulated results are in good agreement with each other, indicating the significance and effectiveness of this method.

Microfluidic EBG Sensor Based on Phase-Shift Method Realized Using 3D Printing Technology

PubMed Central

Radonić, Vasa; Birgermajer, Slobodan; Kitić, Goran

2017-01-01

In this article, we propose a novel microfluidic microstrip electromagnetic band gap (EBG) sensor realized using cost-effective 3D printing technology. Microstrip sensor allows monitoring of the fluid properties flowing in the microchannel embedded between the microstrip line and ground plane. The sensor’s operating principle is based on the phase-shift method, which allows the characterization at a single operating frequency of 6 GHz. The defected electromagnetic band gap (EBG) structure is realized as a pattern in the microstrip ground plane to improve sensor sensitivity. The designed microfluidic channel is fabricated using a fused deposition modelling (FDM) 3D printing process without additional supporting layers, while the conductive layers are realized using sticky aluminium tape. The measurement results show that the change of permittivity of the fluid in the microfluidic channel from 1 to 80 results in the phase-shift difference of almost 90°. The potential application is demonstrated through the implementation of a proposed sensor for the detection of toluene concentration in toluene–methanol mixture where various concentrations of toluene were analysed. PMID:28420217

Microfluidic EBG Sensor Based on Phase-Shift Method Realized Using 3D Printing Technology.

PubMed

Radonić, Vasa; Birgermajer, Slobodan; Kitić, Goran

2017-04-18

In this article, we propose a novel microfluidic microstrip electromagnetic band gap (EBG) sensor realized using cost-effective 3D printing technology. Microstrip sensor allows monitoring of the fluid properties flowing in the microchannel embedded between the microstrip line and ground plane. The sensor's operating principle is based on the phase-shift method, which allows the characterization at a single operating frequency of 6 GHz. The defected electromagnetic band gap (EBG) structure is realized as a pattern in the microstrip ground plane to improve sensor sensitivity. The designed microfluidic channel is fabricated using a fused deposition modelling (FDM) 3D printing process without additional supporting layers, while the conductive layers are realized using sticky aluminium tape. The measurement results show that the change of permittivity of the fluid in the microfluidic channel from 1 to 80 results in the phase-shift difference of almost 90°. The potential application is demonstrated through the implementation of a proposed sensor for the detection of toluene concentration in toluene-methanol mixture where various concentrations of toluene were analysed.

Demonstration of an optical directed half-subtracter using integrated silicon photonic circuits.

PubMed

Liu, Zilong; Zhao, Yongpeng; Xiao, Huifu; Deng, Lin; Meng, Yinghao; Guo, Xiaonan; Liu, Guipeng; Tian, Yonghui; Yang, Jianhong

2018-04-01

An integrated silicon photonic circuit consisting of two silicon microring resonators (MRRs) is proposed and experimentally demonstrated for the purpose of half-subtraction operation. The thermo-optic modulation scheme is employed to modulate the MRRs due to its relatively simple fabrication process. The high and low levels of the electrical pulse signal are utilized to define logic 1 and 0 in the electrical domain, respectively, and the high and low levels of the optical power represent logic 1 and 0 in the optical domain, respectively. Two electrical pulse sequences regarded as the operands are applied to the corresponding micro-heaters fabricated on the top of the MRRs to achieve their dynamic modulations. The final operation results of bit-wise borrow and difference are obtained at their corresponding output ports in the form of light. At last, the subtraction operation of two bits with the operation speed of 10 kbps is demonstrated successfully.

Cross-phase modulation-induced spectral broadening in silicon waveguides.

PubMed

Zhang, Yanbing; Husko, Chad; Lefrancois, Simon; Rey, Isabella H; Krauss, Thomas F; Schröder, Jochen; Eggleton, Benjamin J

2016-01-11

We analytically and experimentally investigate cross-phase modulation (XPM) in silicon waveguides. In contrast to the well known result in pure Kerr media, the spectral broadening ratio of XPM to self-phase modulation is not two in the presence of either two-photon absorption (TPA) or free carriers. The physical origin of this change is different for each effect. In the case of TPA, this nonlinear absorption attenuates and slightly modifies the pulse shape due to differential absorption in the pulse peak and wings. When free carriers are present two different mechanisms modify the dynamics. First, free-carrier absorption performs a similar role to TPA, but is additionally asymmetric due to the delayed free-carrier response. Second, free-carrier dispersion induces an asymmetric blue phase shift which competes directly with the symmetric Kerr-induced XPM red shift. We confirm this analysis with pump-probe experiments in a silicon photonic crystal waveguide.

Biwavelength transceiver module for parallel simultaneous bidirectional optical interconnections

NASA Astrophysics Data System (ADS)

Nguyen, Nga T. H.; Ukaegbu, Ikechi A.; Sangirov, Jamshid; Cho, Mu-Hee; Lee, Tae-Woo; Park, Hyo-Hoon

2013-12-01

The design of a biwavelength transceiver (TRx) module for parallel simultaneous bidirectional optical interconnects is described. The TRx module has been implemented using two different wavelengths, 850 and 1060 nm, to send and receive signals simultaneously through a common optical interface while optimizing cost and performance. Filtering mirrors are formed in the optical fibers which are embedded on a V-grooved silicon substrate for reflecting and filtering optical signals from/to vertical-cavity surface-emitting laser (VCSEL)/photodiode (PD). The VCSEL and PD are flip-chip bonded on individual silicon optical benches, which are attached on the silicon substrate for optical signal coupling from the VCSEL to fiber and from fiber to the PD. A high-speed and low-loss ceramic printed circuit board, which has a compact size of 0.033 cc, has been designed to carry transmitter and receiver chips for easy packaging of the TRx module. Applied for quad small form-factor pluggable applications at 40-Gbps operation, the four-channel biwavelength TRx module showed clear eye diagrams with a bit error rate (BER) of 10-12 at input powers of -5 and -5.8 dBm for 1060 and 850 nm operation modes, respectively.

An experimental investigation of high temperature superconducting microstrip antennas at K- and Ka-band frequencies. Ph.D. Thesis Final Report

NASA Technical Reports Server (NTRS)

Richard, Mark A.

1993-01-01

The recent discovery of high temperature superconductors (HTS) has generated a substantial amount of interest in microstrip antenna applications. However, the high permittivity of substrates compatible with HTS results in narrow bandwidths and high patch edge impedances of such antennas. To investigate the performance of superconducting microstrip antennas, three antenna architectures at K and Ka-band frequencies are examined. Superconducting microstrip antennas that are directly coupled, gap coupled, and electromagnetically coupled to a microstrip transmission line were designed and fabricated on lanthanum aluminate substrates using YBa2Cu3O7 superconducting thin films. For each architecture, a single patch antenna and a four element array were fabricated. Measurements from these antennas, including input impedance, bandwidth, patterns, efficiency, and gain are presented. The measured results show usable antennas can be constructed using any of the architectures. All architectures show excellent gain characteristics, with less than 2 dB of total loss in the four element arrays. Although the direct and gap coupled antennas are the simplest antennas to design and fabricate, they suffer from narrow bandwidths. The electromagnetically coupled antenna, on the other hand, allows the flexibility of using a low permittivity substrate for the patch radiator, while using HTS for the feed network, thus increasing the bandwidth while effectively utilizing the low loss properties of HTS. Each antenna investigated in this research is the first of its kind reported.

Long-term leaching of photovoltaic modules

NASA Astrophysics Data System (ADS)

Nover, Jessica; Zapf-Gottwick, Renate; Feifel, Carolin; Koch, Michael; Metzger, Jörg W.; Werner, Jürgen H.

2017-08-01

Some photovoltaic module technologies use toxic materials. We report long-term leaching on photovoltaic module pieces of 5 × 5 cm2 size. The pieces are cut out from modules of the four major commercial photovoltaic technologies: crystalline and amorphous silicon, cadmium telluride as well as from copper indium gallium diselenide. To simulate different environmental conditions, leaching occurs at room temperature in three different water-based solutions with pH 3, 7, and 11. No agitation is performed to simulate more representative field conditions. After 360 days, about 1.4% of lead from crystalline silicon module pieces and 62% of cadmium from cadmium telluride module pieces are leached out in acidic solutions. The leaching depends heavily on the pH and the redox potential of the aqueous solutions and it increases with time. The leaching behavior is predictable by thermodynamic stability considerations. These predictions are in good agreement with the experimental results.

Potential-Induced Degradation-Delamination Mode in Crystalline Silicon Modules: Preprint

DOE Office of Scientific and Technical Information (OSTI.GOV)

Hacke, Peter L; Kempe, Michael D; Wohlgemuth, John

A test sequence producing potential-induced degradation-delamination (PID-d) in crystalline silicon modules has been tested and found comparable under visual inspection to cell/encapsulant delamination seen in some fielded modules. Four commercial modules were put through this sequence, 85 degrees C, 85%, 1000 h damp heat, followed by an intensive PID stress sequence of 72 degrees C, 95% RH, and -1000 V, with the module face grounded using a metal foil. The 60 cell c-Si modules exhibiting the highest current transfer (4.4 center dot 10-4 A) exhibited PID-d at the first inspection after 156 h of PID stress. Effects promoting PID-d aremore » reduced adhesion caused by damp heat, sodium migration further reducing adhesion to the cells, and gaseous products of electrochemical reactions driven by the applied system voltage. A new work item proposal for an IEC test standard to evaluate for PID-d is anticipated.« less

Low-loss and energy efficient modulation in silicon photonic waveguides by adiabatic elimination scheme

NASA Astrophysics Data System (ADS)

Mrejen, Michael; Suchowski, Haim; Bachelard, Nicolas; Wang, Yuan; Zhang, Xiang

2017-07-01

High-speed Silicon Photonics calls for solutions providing a small footprint, high density, and minimum crosstalk, as exemplified by the recent development of integrated optical modulators. Yet, the performances of such modulators are hindered by intrinsic material losses, which results in low energy efficiency. Using the concept of Adiabatic Elimination, here, we introduce a scheme allowing for the low-loss modulation in densely packed waveguides. Our system is composed of two waveguides, whose coupling is mediated by an intermediate third waveguide. The signal is carried by the two outer modes, while the active control of their coupling is achieved via the intermediate dark mode. The modulation is performed by the manipulation of the central-waveguide mode index, leaving the signal-carrying waveguides unaffected by the loss. We discuss how Adiabatic Elimination provides a solution for mitigating signal losses and designing relatively compact, broadband, and energy-efficient integrated optical modulators.

Penetration depth of MgB2 measured using Josephson junctions and SQUIDs

NASA Astrophysics Data System (ADS)

Cunnane, Daniel; Zhuang, Chenggang; Chen, Ke; Xi, X. X.; Yong, Jie; Lemberger, T. R.

2013-02-01

The penetration depth of MgB2 was measured using two methods of different mechanisms. The first method used MgB2 Josephson junctions and the magnetic field dependence of the junction critical current. The second method deduced the penetration depth from the inductance of a MgB2 microstrip used to modulate the voltage of a MgB2 DC SQUID. The two methods showed a consistent value of the low-temperature penetration depth for MgB2 to be about 40 nm. Both the small penetration depth value and its temperature dependence are in agreement with a microscopic theory for MgB2 in the clean limit.

High temperature material interactions of thermoelectric systems using silicon germanium.

NASA Technical Reports Server (NTRS)

Stapfer, G.; Truscello, V. C.

1973-01-01

The efficient use of silicon germanium thermoelectric material for radioisotope thermoelectric generators (RTG) is achieved by operation at relatively high temperatures. The insulation technique which is most appropriate for this application uses multiple layers of molybdenum foil and astroquartz. Even so, the long term operation of these materials at elevated temperatures can cause material interaction to occur within the system. To investigate these material interactions, the Jet Propulsion Laboratory is currently testing a number of thermoelectric modules which use four silicon germanium thermoelectric couples in conjunction with the multifoil thermal insulation. The paper discusses the results of the ongoing four-couple module test program and correlates test results with those of a basic material test program.

Evaluation of Mismatch Losses due to Shunts in industrial Silicon Photovoltaic Modules

NASA Astrophysics Data System (ADS)

Somasundaran, P.; Shilpi, M.; Gupta, R.

2017-05-01

In order to achieve higher efficiencies in photovoltaic module technology, it is important to characterize the shunts and other defects which degrade the performance of cells and modules as well as decrease their efficiency. These shunts also affect the reliability of cells and modules. It is important to understand how much fill factor and power loss is caused by the presence of shunts in the module. Shunts not only reduce the module power output, but also affect the I-V characteristics of the cell and hence the characteristics of the shunted cells are different from those of the shunt-free cells connected in the module leading to the mismatch effect. This is an interesting effect which has been systematically investigated in the present work. Moreover, the flow of increased shunt current will give rise to increased temperature in the region of shunt, which will affect the cell and hence module performance. In the present study, the distributed diode model has been extended to the module level and applied to evaluate the electrical mismatch losses and thermal mismatch losses due to shunts in industrial Silicon PV modules.

On-chip microwave signal generation based on a silicon microring modulator.

PubMed

Shao, Haifeng; Yu, Hui; Li, Xia; Li, Yan; Jiang, Jianfei; Wei, Huan; Wang, Gencheng; Dai, Tingge; Chen, Qimei; Yang, Jianyi; Jiang, Xiaoqing

2015-07-15

A photonic-assisted microwave signal generator based on a silicon microring modulator is demonstrated. The microring cavity incorporates an embedded PN junction that enables a microwave signal to modulate the lightwave circling inside. The DC component of the modulated light is trapped in the cavity, while the high-order sideband components are able to exit the cavity and then generate microwave signals at new frequencies in a photodetector. In our proof-of-concept experiment, a 10 GHz microwave signal is converted to a 20 GHz signal in the optical domain with an electrical harmonic suppression ratio of 22 dB. An analytic model is also established to explain the operation mechanism, which agrees well with the measured data.

Performance tradeoff between lateral and interdigitated doping patterns for high speed carrier-depletion based silicon modulators.

PubMed

Yu, Hui; Pantouvaki, Marianna; Van Campenhout, Joris; Korn, Dietmar; Komorowska, Katarzyna; Dumon, Pieter; Li, Yanlu; Verheyen, Peter; Absil, Philippe; Alloatti, Luca; Hillerkuss, David; Leuthold, Juerg; Baets, Roel; Bogaerts, Wim

2012-06-04

Carrier-depletion based silicon modulators with lateral and interdigitated PN junctions are compared systematically on the same fabrication platform. The interdigitated diode is shown to outperform the lateral diode in achieving a low VπLπ of 0.62 V∙cm with comparable propagation loss at the expense of a higher depletion capacitance. The low VπLπ of the interdigitated PN junction is employed to demonstrate 10 Gbit/s modulation with 7.5 dB extinction ration from a 500 µm long device whose static insertion loss is 2.8 dB. In addition, up to 40 Gbit/s modulation is demonstrated for a 3 mm long device comprising a lateral diode and a co-designed traveling wave electrode.

Microstrip antenna arrays with parasitic elements

NASA Technical Reports Server (NTRS)

Lee, Kai-Fong

1996-01-01

This research was concerned with using parasitic elements to improve the bandwidth, gain and axial ratio characteristics of microstrip antennas and arrays. Significant improvements in these characteristics were obtained using stacked and coplanar parasitic elements. Details of the results are described in a total of 16 journal and 17 conference papers. These are listed in Section four of this report.

Quality Factor Effect on the Wireless Range of Microstrip Patch Antenna Strain Sensors

PubMed Central

Daliri, Ali; Galehdar, Amir; Rowe, Wayne S. T.; John, Sabu; Wang, Chun H.; Ghorbani, Kamran

2014-01-01

Recently introduced passive wireless strain sensors based on microstrip patch antennas have shown great potential for reliable health and usage monitoring in aerospace and civil industries. However, the wireless interrogation range of these sensors is limited to few centimeters, which restricts their practical application. This paper presents an investigation on the effect of circular microstrip patch antenna (CMPA) design on the quality factor and the maximum practical wireless reading range of the sensor. The results reveal that by using appropriate substrate materials the interrogation distance of the CMPA sensor can be increased four-fold, from the previously reported 5 to 20 cm, thus improving considerably the viability of this type of wireless sensors for strain measurement and damage detection. PMID:24451457

Quality factor effect on the wireless range of microstrip patch antenna strain sensors.

PubMed

Daliri, Ali; Galehdar, Amir; Rowe, Wayne S T; John, Sabu; Wang, Chun H; Ghorbani, Kamran

2014-01-02

Recently introduced passive wireless strain sensors based on microstrip patch antennas have shown great potential for reliable health and usage monitoring in aerospace and civil industries. However, the wireless interrogation range of these sensors is limited to few centimeters, which restricts their practical application. This paper presents an investigation on the effect of circular microstrip patch antenna (CMPA) design on the quality factor and the maximum practical wireless reading range of the sensor. The results reveal that by using appropriate substrate materials the interrogation distance of the CMPA sensor can be increased four-fold, from the previously reported 5 to 20 cm, thus improving considerably the viability of this type of wireless sensors for strain measurement and damage detection.

Spiral microstrip antenna with resistance

NASA Technical Reports Server (NTRS)

Shively, David G. (Inventor)

1994-01-01

The present invention relates to microstrip antennas, and more particularly to wide bandwidth spiral antennas with resistive loading. A spiral microstrip antenna having resistor element embedded in each of the spiral arms is provided. The antenna is constructed using a conductive back plane as a base. The back plane supports a dielectric slab having a thickness between one-sixteenth and one-quarter of an inch. A square spiral, having either two or four arms, is attached to the dielectric slab. Each arm of the spiral has resistor elements thereby dissipating an excess energy not already emitted through radiation. The entire configuration provides a thin, flat, high gain, wide bandwidth antenna which requires no underlying cavity. The configuration allows the antenna to be mounted conformably on an aircraft surface.

Tunable Microstrip Filters Using Selectively Etched Ferroelectric Thin-Film Varactors for Coupling

NASA Technical Reports Server (NTRS)

Mueller, Carl H.; VanKeuls, Frederick W.; Romanofsky, Robert R.; Subramanyam, Guru; Miranda, Felix A.

2006-01-01

We report on the use of patterned ferroelectric films to fabricate proof of concept tunable one-pole microstrip filters with excellent transmission and mismatch/reflection properties at frequencies up to 24 GHz. By controlling the electric field distribution within the coupling region between the resonator and input/output lines, sufficiently high loaded and unloaded Q values are maintained so as to be useful for microstrip filter design, with low mismatch loss. In the 23 - 24 GHz region, the filter was tunable over a 100 MHz range, the loaded and unloaded Q values were 29 and 68, respectively, and the reflection losses were below -16 dB, which demonstrates the suitability of these films for practical microwave applications.

Design of microstrip patch antennas using knowledge insertion through retraining

NASA Astrophysics Data System (ADS)

Divakar, T. V. S.; Sudhakar, A.

2018-04-01

The traditional way of analyzing/designing neural network is to collect experimental data and train neural network. Then, the trained neural network acts as global approximate function. The network is then used to calculate parameters for unknown configurations. The main drawback of this method is one does not have enough experimental data, cost of prototypes being a major factor [1-4]. Therefore, in this method the author collected training data from available approximate formulas with in full design range and trained the network with it. After successful training, the network is retrained with available measured results. This simple way inserts experimental knowledge into the network [5]. This method is tested for rectangular microstrip antenna and circular microstrip antenna.

Flexible Microstrip Circuits for Superconducting Electronics

NASA Technical Reports Server (NTRS)

Chervenak, James; Mateo, Jennette

2013-01-01

Flexible circuits with superconducting wiring atop polyimide thin films are being studied to connect large numbers of wires between stages in cryogenic apparatus with low heat load. The feasibility of a full microstrip process, consisting of two layers of superconducting material separated by a thin dielectric layer on 5 mil (approximately 0.13 mm) Kapton sheets, where manageable residual stress remains in the polyimide film after processing, has been demonstrated. The goal is a 2-mil (approximately 0.051-mm) process using spin-on polyimide to take advantage of the smoother polyimide surface for achieving highquality metal films. Integration of microstrip wiring with this polyimide film may require high-temperature bakes to relax the stress in the polyimide film between metallization steps.

Summary of flat-plate solar array project documentation. Abstracts of published documents, 1975 to June 1982

NASA Technical Reports Server (NTRS)

1982-01-01

Technologies that will enable the private sector to manufacture and widely use photovoltaic systems for the generation of electricity in residential, commercial, industrial, and government applications at a cost per watt that is competitive with other means is investigated. Silicon refinement processes, advanced silicon sheet growth techniques, solar cell development, encapsulation, automated fabrication process technology, advanced module/array design, and module/array test and evaluation techniques are developed.

Develop Silicone Encapsulation Systems for Terrestrial Silicon Solar Arrays

NASA Technical Reports Server (NTRS)

1979-01-01

The results for Task 3 of the Low Cost Solar Array Project are presented. Task 3 is directed toward the development of a cost effective encapsulating system for photovoltaic modules using silicon based materials. The technical approach of the contract effort is divided into four special tasks: (1) technology review; (2) generation of concepts for screening and processing silicon encapsulation systems; (3) assessment of encapsulation concepts; and (4) evaluation of encapsulation concepts. The candidate silicon materials are reviewed. The silicon and modified silicon resins were chosen on the basis of similarity to materials with known weatherability, cost, initial tangential modulus, accelerated dirt pick-up test results and the ratio of the content of organic phenyl substitution of methyl substitution on the backbone of the silicon resin.

Study of run time errors of the ATLAS pixel detector in the 2012 data taking period

NASA Astrophysics Data System (ADS)

Gandrajula, Reddy Pratap

The high resolution silicon Pixel detector is critical in event vertex reconstruction and in particle track reconstruction in the ATLAS detector. During the pixel data taking operation, some modules (Silicon Pixel sensor +Front End Chip+ Module Control Chip (MCC)) go to an auto-disable state, where the Modules don't send the data for storage. Modules become operational again after reconfiguration. The source of the problem is not fully understood. One possible source of the problem is traced to the occurrence of single event upset (SEU) in the MCC. Such a module goes to either a Timeout or Busy state. This report is the study of different types and rates of errors occurring in the Pixel data taking operation. Also, the study includes the error rate dependency on Pixel detector geometry.

Optical modulation in silicon waveguides via charge state control of deep levels.

PubMed

Logan, D F; Jessop, P E; Knights, A P; Wojcik, G; Goebel, A

2009-10-12

The control of defect mediated optical absorption at a wavelength of 1550 nm via charge state manipulation is demonstrated using optical absorption measurements of indium doped Silicon-On-Insulator (SOI) rib waveguides. These measurements introduce the potential for modulation of waveguide transmission by using the local depletion and injection of free-carriers to change deep-level occupancy. The extinction ratio and modulating speed are simulated for a proposed device structure. A 'normally-off' depletion modulator is described with an extinction coefficient limited to 5 dB/cm and switching speeds in excess of 1 GHz. For a carrier injection modulator a fourfold enhancement in extinction ratio is provided relative to free carrier absorption alone. This significant improvement in performance is achieved with negligible increase in driving power but slightly degraded switching speed.

Porous Silicon as Antireflecting Layer

NASA Astrophysics Data System (ADS)

Kosoglu, Gulsen; Yumak, Mehmet; Okmen, Selim; Ozatay, Ozhan; Skarlatos, Yani; Garcia, Carlos

2013-03-01

The main aim in photovoltaic industry is to produce efficient and energy competitive solar cell modules at low cost. Efficient AntiReflection Coatings (ARC) improve light collection and thereby increase the current output of solar cells. Broadband ARCs are desirable for efficient application over the entire solar spectrum and porous silicon layers as antireflective coating layers provide successful light collection. In the study the most critical physical parameters of porous silicon are examined, homogeneous and uniform porous layers are produced. The photoluminescence spectrum and optical parameters of porous layers have been investigated, and we are now in the process of improving the efficiency of the device by modulating the structure of the porous silicon layers and studying its photovoltaic characteristics. We would like to thank to Mr. Aziz U. Caliskan and his group for their valuable support from TUBITAK YITAL. This Project is supported by Bogazici University Research Funding: 5782, TUBITAK Grant : 209T099, and Bogazici University Infrared Funding: 6121.

Rabi oscillation and electron-spin-echo envelope modulation of the photoexcited triplet spin system in silicon

NASA Astrophysics Data System (ADS)

Akhtar, Waseem; Sekiguchi, Takeharu; Itahashi, Tatsumasa; Filidou, Vasileia; Morton, John J. L.; Vlasenko, Leonid; Itoh, Kohei M.

2012-09-01

We report on a pulsed electron paramagnetic resonance (EPR) study of the photoexcited triplet state (S=1) of oxygen-vacancy centers in silicon. Rabi oscillations between the triplet sublevels are observed using coherent manipulation with a resonant microwave pulse. The Hahn echo and stimulated echo decay profiles are superimposed with strong modulations known as electron-spin-echo envelope modulation (ESEEM). The ESEEM spectra reveal a weak but anisotropic hyperfine coupling between the triplet electron spin and a 29Si nuclear spin (I=1/2) residing at a nearby lattice site, that cannot be resolved in conventional field-swept EPR spectra.

A review of manufacturing metrology for improved reliability of silicon photovoltaic modules

NASA Astrophysics Data System (ADS)

Davis, Kristopher O.; Walters, Joseph; Schneller, Eric; Seigneur, Hubert; Brooker, R. Paul; Scardera, Giuseppe; Rodgers, Marianne P.; Mohajeri, Nahid; Shiradkar, Narendra; Dhere, Neelkanth G.; Wohlgemuth, John; Rudack, Andrew C.; Schoenfeld, Winston V.

2014-10-01

In this work, the use of manufacturing metrology across the supply chain to improve crystalline silicon (c-Si) photovoltaic (PV) module reliability and durability is addressed. Additionally, an overview and summary of a recent extensive literature survey of relevant measurement techniques aimed at reducing or eliminating the probability of field failures is presented. An assessment of potential gaps is also given, wherein the PV community could benefit from new research and demonstration efforts. This review is divided into three primary areas representing different parts of the c-Si PV supply chain: (1) feedstock production, crystallization and wafering; (2) cell manufacturing; and (3) module manufacturing.

A Module Experimental Process System Development Unit (MEPSDU). [development of low cost solar arrays

NASA Technical Reports Server (NTRS)

1981-01-01

The technical readiness of a cost effective process sequence that has the potential for the production of flat plate photovoltaic modules which met the price goal in 1986 of $.70 or less per Watt peak was demonstrated. The proposed process sequence was reviewed and laboratory verification experiments were conducted. The preliminary process includes the following features: semicrystalline silicon (10 cm by 10 cm) as the silicon input material; spray on dopant diffusion source; Al paste BSF formation; spray on AR coating; electroless Ni plate solder dip metallization; laser scribe edges; K & S tabbing and stringing machine; and laminated EVA modules.

Frequency comb generation in a silicon ring resonator modulator.

PubMed

Demirtzioglou, Iosif; Lacava, Cosimo; Bottrill, Kyle R H; Thomson, David J; Reed, Graham T; Richardson, David J; Petropoulos, Periklis

2018-01-22

We report on the generation of an optical comb of highly uniform in power frequency lines (variation less than 0.7 dB) using a silicon ring resonator modulator. A characterization involving the measurement of the complex transfer function of the ring is presented and five frequency tones with a 10-GHz spacing are produced using a dual-frequency electrical input at 10 and 20 GHz. A comb shape comparison is conducted for different modulator bias voltages, indicating optimum operation at a small forward-bias voltage. A time-domain measurement confirmed that the comb signal was highly coherent, forming 20.3-ps-long pulses.

22.7% efficient PERL silicon solar cell module with a textured front surface

DOE Office of Scientific and Technical Information (OSTI.GOV)

Zhao, J.; Wang, A.; Campbell, P.

1997-12-31

This paper describes a solar cell module efficiency of 22.7% independently measured at Sandia National Laboratories. This is the highest ever confirmed efficiency for a photovoltaic module of this size achieved by cells made from any material. This 778-cm{sup 2} module used 40 large-area double layer antireflection coated PERL (passivated emitter, rear locally-diffused) silicon cells of average efficiency of 23.1%. A textured front module surface considerably improve the module efficiency. Also reported is an independently confirmed efficiency of 23.7% for a 21.6 cm{sup 2} cell of the type used in the module. Using these PERL cells in the 1996 Worldmore » Solar Challenge solar car race from Darwin to Adelaide across Australia, Honda`s Dream and Aisin Seiki`s Aisol III were placed first and third, respectively. Honda also set a new record by reaching Adelaide in four days with an average speed of 90km/h over the 3010 km course.« less

Analysis of multiple internal reflections in a parallel aligned liquid crystal on silicon SLM.

PubMed

Martínez, José Luis; Moreno, Ignacio; del Mar Sánchez-López, María; Vargas, Asticio; García-Martínez, Pascuala

2014-10-20

Multiple internal reflection effects on the optical modulation of a commercial reflective parallel-aligned liquid-crystal on silicon (PAL-LCoS) spatial light modulator (SLM) are analyzed. The display is illuminated with different wavelengths and different angles of incidence. Non-negligible Fabry-Perot (FP) effect is observed due to the sandwiched LC layer structure. A simplified physical model that quantitatively accounts for the observed phenomena is proposed. It is shown how the expected pure phase modulation response is substantially modified in the following aspects: 1) a coupled amplitude modulation, 2) a non-linear behavior of the phase modulation, 3) some amount of unmodulated light, and 4) a reduction of the effective phase modulation as the angle of incidence increases. Finally, it is shown that multiple reflections can be useful since the effect of a displayed diffraction grating is doubled on a beam that is reflected twice through the LC layer, thus rendering gratings with doubled phase modulation depth.

Antenna-coupled Superconducting Bolometers for Observations of the Cosmic Microwave Background Polarization

NASA Astrophysics Data System (ADS)

Myers, Michael James

We describe the development of a novel millimeter-wave cryogenic detector. The device integrates a planar antenna, superconducting transmission line, bandpass filter, and bolometer onto a single silicon wafer. The bolometer uses a superconducting Transition-Edge Sensor (TES) thermistor, which provides substantial advantages over conventional semiconductor bolometers. The detector chip is fabricated using standard micro-fabrication techniques. This highly-integrated detector architecture is particularly well-suited for use in the de- velopment of polarization-sensitive cryogenic receivers with thousands of pixels. Such receivers are needed to meet the sensitivity requirements of next-generation cosmic microwave background polarization experiments. The design, fabrication, and testing of prototype array pixels are described. Preliminary considerations for a full array design are also discussed. A set of on-chip millimeter-wave test structures were developed to help understand the performance of our millimeter-wave microstrip circuits. These test structures produce a calibrated transmission measurement for an arbitrary two-port circuit using optical techniques, rather than a network analyzer. Some results of fabricated test structures are presented.

Optical simulations for design, alignment, and performance prediction of silicon pore optics for the ATHENA x-ray telescope (Conference Presentation)

NASA Astrophysics Data System (ADS)

Spiga, D.; Della Monica Ferreira, D.; Shortt, B.; Bavdaz, M.; Bergback Knudsen, E.; Bianucci, G.; Christensen, F.; Civitani, M.; Collon, M.; Conconi, P.; Fransen, S.; Marioni, F.; Massahi, S.; Pareschi, G.; Salmaso, B.; Jegers, A. S.; Tayabaly, K.; Valsecchi, G.; Westergaard, N.; Wille, E.

2017-09-01

The ATHENA X-ray observatory is a large-class ESA approved mission, with launch scheduled in 2028. The technology of silicon pore optics (SPO) was selected as baseline to assemble ATHENA's optic with hundreds of mirror modules, obtained by stacking wedged and ribbed silicon wafer plates onto silicon mandrels to form the Wolter-I configuration. In the current configuration, the optical assembly has a 3 m diameter and a 2 m2 effective area at 1 keV, with a required angular resolution of 5 arcsec. The angular resolution that can be achieved is chiefly the combination of 1) the focal spot size determined by the pore diffraction, 2) the focus degradation caused by surface and profile errors, 3) the aberrations introduced by the misalignments between primary and secondary segments, 4) imperfections in the co-focality of the mirror modules in the optical assembly. A detailed simulation of these aspects is required in order to assess the fabrication and alignment tolerances; moreover, the achievable effective area and angular resolution depend on the mirror module design. Therefore, guaranteeing these optical performances requires: a fast design tool to find the most performing solution in terms of mirror module geometry and population, and an accurate point spread function simulation from local metrology and positioning information. In this paper, we present the results of simulations in the framework of ESA-financed projects (SIMPOSiuM, ASPHEA, SPIRIT), in preparation of the ATHENA X-ray telescope, analyzing the mentioned points: 1) we deal with a detailed description of diffractive effects in an SPO mirror module, 2) we show ray-tracing results including surface and profile defects of the reflective surfaces, 3) we assess the effective area and angular resolution degradation caused by alignment errors between SPO mirror module's segments, and 4) we simulate the effects of co-focality errors in X-rays and in the UV optical bench used to study the mirror module alignment and integration.

Silicon modulators with optimized vertical PN junctions for high-modulation-efficiency and low-loss in the O-band

NASA Astrophysics Data System (ADS)

Ang, Thomas Y. L.; Png, Ching Eng; Lim, Soon Thor; Ong, Jun Rong

2018-02-01

Silicon modulators based on the carrier depletion mechanism are extensively used in recent years for high-speed data transmission. Lateral PN junctions are the most common electro-optical phase shifters for silicon Mach-Zehnder modulators (MZMs) due to its ease of fabrication. They have a relatively high DC VπLπ of around 2.5 V.cm in the Oband. An alternative approach is to design and optimize vertical PN junctions for lower DC VπLπ, which is currently lacking in the literature for silicon MZMs that operates using carrier depletion mechanism in the O-band. In this work, we look into the design and optimization of silicon phase shifters based on vertical PN junctions for high-modulationefficiency with VπLπ <= 1 V.cm, while meeting the stringent low loss budget of <= 1 dB/mm for data communication in the O-band. This is achieved by varying the offsets of the vertical PN junction with respect to different doping concentrations (2e17/cm3 - 3e18/cm3 ) near the depletion region. Different types of doping schemes are explored and optimized. Our optimized vertical PN junction designs are predicted to give low DC VπLπ of 0.26-0.5 V.cm for low DC reverse bias of >= -2V and low propagation loss of <= 1dB/mm, resulting in α.VπLπ = 1.7 for the best designs, which to the best of our knowledge, is the lowest α.VπLπ at the O-band to date. Electrical and optical modeling are based on our in-house proprietary software that is able to perform both optical and electrical simulations without loss of data fidelity.

Proceedings of the 22nd Project Integration Meeting

NASA Technical Reports Server (NTRS)

1983-01-01

This report describes progress made by the Flat-Plate Solar Array Project during the period January to September 1983. It includes reports on silicon sheet growth and characterization, module technology, silicon material, cell processing and high-efficiency cells, environmental isolation, engineering sciences, module performance and failure analysis and project analysis and integration. It includes a report on, and copies of visual presentations made at the 22nd Project Integration Meeting held at Pasadena, California, on September 28 and 29, 1983.

Integrate Thermal Modules for Cooling Silicon and Silicon Carbide Power Modules

DTIC Science & Technology

2007-06-01

currently valid OMB control number. 1 . REPORT DATE 11 JUN 2007 2 . REPORT TYPE N/A 3. DATES COVERED - 4. TITLE AND SUBTITLE Integrate Thermal...vehicle operation as follows: 1 ) Normal Operation at High Speed 2 ) Normal Operation at Low Speed 3) Acceleration at High Speed 4) Acceleration at Low...diodes. For a basis of comparing the performance of the ITMs, we are using the Semikron 100 kW SKAI inverter (fig 1 ) to quantify and generate

Thermally tunable silicon racetrack resonators with ultralow tuning power.

PubMed

Dong, Po; Qian, Wei; Liang, Hong; Shafiiha, Roshanak; Feng, Dazeng; Li, Guoliang; Cunningham, John E; Krishnamoorthy, Ashok V; Asghari, Mehdi

2010-09-13

We present thermally tunable silicon racetrack resonators with an ultralow tuning power of 2.4 mW per free spectral range. The use of free-standing silicon racetrack resonators with undercut structures significantly enhances the tuning efficiency, with one order of magnitude improvement of that for previously demonstrated thermo-optic devices without undercuts. The 10%-90% switching time is demonstrated to be ~170 µs. Such low-power tunable micro-resonators are particularly useful as multiplexing devices and wavelength-tunable silicon microcavity modulators.

Design of microwave antenna system on planar Yagi-Uda elements and microstrip coupler

NASA Astrophysics Data System (ADS)

Petrovnin, K. V.; Latypov, R. R.

2017-11-01

Paper presents results of calculation, electromagnetic modelling and measurements of manufactured antenna system on planar Yagi-Uda elements and microstrip coupler. System has summary and subtract modes. Center frequency of system is 1532 MHz with 96 MHz bandwidth. Gain of system is 8 dB in main lobe direction (in-phase mode) and 5 dB (antiphase mode).

Bandwidth enhancement of a microstrip patch antenna for ultra-wideband applications

NASA Astrophysics Data System (ADS)

Anum, Khanda; Singh, Milind Saurabh; Mishra, Rajan; Tripathi, G. S.

2018-04-01

The microstrip antennas are used where size, weight, cost, and performance are constraints. Microstrip antennas (MSA) are being used in many government and commercial applications among which it is mostly used in wireless communication. The proposed antenna is designed for Ultra-wideband (UWB), it is designed on FR4 substrate material with ɛr = 4.3 and 0.0025 loss tangent. The shape and size of patch in microstrip patch antenna plays an important role in its performance. In the proposed antenna design the respective changes have been introduced which includes slotting the feedline,adding a curved slot in patch and change in patch shape itself to improve the bandwidth of the conventional antenna. The simulated results of proposed antenna shows impedance bandwidth (defined by 10 dB return loss) of 2-11.1GHz, VSWR<2 for entire bandwidth of antenna and peak gain is 5.2 dB. Thus the antenna covers the UWB range and it can also be used for bands such as 2.4/3.6/5 -GHz WLAN bands, 2.5/3.5/5.5GHz WiMAX bands and X band satellite communication at 7.25-8.395 GHz.

A 10 GHz Y-Ba-Cu-O/GaAs hybrid oscillator proximity coupled to a circular microstrip patch antenna

NASA Technical Reports Server (NTRS)

Rohrer, Norman J.; Richard, M. A.; Valco, George J.; Bhasin, Kul B.

1993-01-01

A 10 GHz hybrid YBCO/GaAs microwave oscillator proximity coupled to a circular microstrip antenna has been designed, fabricated, and characterized. The oscillator was a reflection mode type using a GaAs MESFET as the active element. The feedline, transmission lines, RF chokes, and bias lines were all fabricated from YBCO superconducting thin films on a 1 cm x 1 cm lanthanum aluminate substrate. The output feedline of the oscillator was wire bonded to a superconducting feedline on a second 1 cm x 1 cm lanthanum aluminate substrate, which was in turn proximity coupled to a circular microstrip patch antenna. Antenna patterns from this active patch antenna and the performance of the oscillator measured at 77 K are reported. The oscillator had a maximum output power of 11.5 dBm at 77 K, which corresponded to an efficiency of 10 percent. In addition, the efficiency of the microstrip patch antenna together with its high temperature superconducting feedline was measured from 85 K to 30 K and was found to be 71 percent at 77 K, increasing to a maximum of 87.4 percent at 30 K.

Rectangular Microstrip Antenna with Slot Embedded Geometry

NASA Astrophysics Data System (ADS)

Ambresh, P. A.; Hadalgi, P. M.; Hunagund, P. V.; Sujata, A. A.

2014-09-01

In this paper, a novel design that improves the performance of conventional rectangular microstrip antenna is discussed. Design adopts basic techniques such as probe feeding technique with rectangular inverted patch structure as superstrate, air filled dielectric medium as substrate and slot embedded patch. Prototype of the proposed antenna has been fabricated and various antenna performance parameters such as impedance bandwidth, return loss, radiation pattern and antenna gain are considered for Electromagnetic-study. The antennas are designed for the wireless application operating in the frequency range of 3.3 GHz to 3.6 GHz, and UK based fixed satellite service application (3 GHz to 4 GHz), and are named as single inverted patch conventional rectangular microstrip antenna (SIP-CRMSA) and slots embedded inverted patch rectangular microstrip antenna (SEIP-RMSA), respectively. Measurement outcomes for SEIP-RMSA1 and SEIP-RMSA2 showed the satisfactory performance with an achievable impedance bandwidth of 260 MHz (7 %) and 250 MHz (6.72 %), with return loss (RL) of -11.06 dB and -17.98 dB, achieved gain of 8.17 dB and 5.17 dB with 10% and 8% size reduction in comparison with the conventional patch antenna.

A Circular Microstrip Antenna Sensor for Direction Sensitive Strain Evaluation.

PubMed

Lopato, Przemyslaw; Herbko, Michal

2018-01-20

In this paper, a circular microstrip antenna for stress evaluation is studied. This kind of microstrip sensor can be utilized in structural health monitoring systems. Reflection coefficient S 11 is measured to determine deformation/strain value. The proposed sensor is adhesively connected to the studied sample. Applied strain causes a change in patch geometry and influences current distribution both in patch and ground plane. Changing the current flow in patch influences the value of resonant frequency. In this paper, two different resonant frequencies were analysed because in each case, different current distributions in patch were obtained. The sensor was designed for operating frequency of 2.5 GHz (at fundamental mode), which results in a diameter less than 55 mm. Obtained sensitivity was up to 1 MHz/100 MPa, resolution depends on utilized vector network analyser. Moreover, the directional characteristics for both resonant frequencies were defined, studied using numerical model and verified by measurements. Thus far, microstrip antennas have been used in deformation measurement only if the direction of external force was well known. Obtained directional characteristics of the sensor allow the determination of direction and value of stress by one sensor. This method of measurement can be an alternative to the rosette strain gauge.

A 10 GHz Y-Ba-Cu-O/GaAs hybrid oscillator proximity coupled to a circular microstrip patch antenna

NASA Technical Reports Server (NTRS)

Rohrer, Norman J.; Richard, M. A.; Valco, George J.; Bhasin, Kul B.

1993-01-01

A 10 GHz hybrid Y-Ba-Cu-O / GaAs microwave oscillator proximity coupled to a circular microstrip antenna was designed, fabricated and characterized. The oscillator was a reflection mode type using a GaAs MESFET as the active element. The feedline, transmission lines, RF chokes, and bias lines were all fabricated from YBa2Cu3O(7-x) superconducting thin films on a 1 cm x 1 cm lanthanum aluminate substrate. The output feedline of the oscillator was wire bonded to a superconducting feedline on a second 1 cm x 1 cm lanthanum aluminate substrate, which was in turn proximity coupled to a circular microstrip patch antenna. Antenna patterns from this active patch antenna and the performance of the oscillator measured at 77 K are reported. The oscillator had a maximum output power of 11.5 dBm at 77 K, which corresponded to an efficiency of 10 percent. In addition, the efficiency of the microstrip patch antenna together with its high temperature superconducting feedline was measured from 85 K to 30 K and was found to be 71 percent at 77 4 increasing to a maximum of 87.4 percent at 30 K.

Prediction of matching condition for a microstrip subsystem using artificial neural network and adaptive neuro-fuzzy inference system

NASA Astrophysics Data System (ADS)

Salehi, Mohammad Reza; Noori, Leila; Abiri, Ebrahim

2016-11-01

In this paper, a subsystem consisting of a microstrip bandpass filter and a microstrip low noise amplifier (LNA) is designed for WLAN applications. The proposed filter has a small implementation area (49 mm2), small insertion loss (0.08 dB) and wide fractional bandwidth (FBW) (61%). To design the proposed LNA, the compact microstrip cells, an field effect transistor, and only a lumped capacitor are used. It has a low supply voltage and a low return loss (-40 dB) at the operation frequency. The matching condition of the proposed subsystem is predicted using subsystem analysis, artificial neural network (ANN) and adaptive neuro-fuzzy inference system (ANFIS). To design the proposed filter, the transmission matrix of the proposed resonator is obtained and analysed. The performance of the proposed ANN and ANFIS models is tested using the numerical data by four performance measures, namely the correlation coefficient (CC), the mean absolute error (MAE), the average percentage error (APE) and the root mean square error (RMSE). The obtained results show that these models are in good agreement with the numerical data, and a small error between the predicted values and numerical solution is obtained.

Off-axis holographic lens spectrum-splitting photovoltaic system for direct and diffuse solar energy conversion.

PubMed

Vorndran, Shelby D; Chrysler, Benjamin; Wheelwright, Brian; Angel, Roger; Holman, Zachary; Kostuk, Raymond

2016-09-20

This paper describes a high-efficiency, spectrum-splitting photovoltaic module that uses an off-axis volume holographic lens to focus and disperse incident solar illumination to a rectangular shaped high-bandgap indium gallium phosphide cell surrounded by strips of silicon cells. The holographic lens design allows efficient collection of both direct and diffuse illumination to maximize energy yield. We modeled the volume diffraction characteristics using rigorous coupled-wave analysis, and simulated system performance using nonsequential ray tracing and PV cell data from the literature. Under AM 1.5 illumination conditions the simulated module obtained a 30.6% conversion efficiency. This efficiency is a 19.7% relative improvement compared to the more efficient cell in the system (silicon). The module was also simulated under a typical meteorological year of direct and diffuse irradiance in Tucson, Arizona, and Seattle, Washington. Compared to a flat panel silicon module, the holographic spectrum splitting module obtained a relative improvement in energy yield of 17.1% in Tucson and 14.0% in Seattle. An experimental proof-of-concept volume holographic lens was also fabricated in dichromated gelatin to verify the main characteristics of the system. The lens obtained an average first-order diffraction efficiency of 85.4% across the aperture at 532 nm.

Performance degradation of grid-tied photovoltaic modules in a hot-dry climatic condition

NASA Astrophysics Data System (ADS)

Suleske, Adam; Singh, Jaspreet; Kuitche, Joseph; Tamizh-Mani, Govindasamy

2011-09-01

The crystalline silicon photovoltaic (PV) modules under open circuit conditions typically degrade at a rate of about 0.5% per year. However, it is suspected that the modules in an array level may degrade, depending on equipment/frame grounding and array grounding, at higher rates because of higher string voltage and increased module mismatch over the years of operation in the field. This paper compares and analyzes the degradation rates of grid-tied photovoltaic modules operating over 10-17 years in a desert climatic condition of Arizona. The nameplate open-circuit voltages of the arrays ranged between 400 and 450 V. Six different types/models of crystalline silicon modules with glass/glass and glass/polymer constructions were evaluated. About 1865 modules were inspected using an extended visual inspection checklist and infrared (IR) scanning. The visual inspection checklist included encapsulant discoloration, cell/interconnect cracks, delamination and corrosion. Based on the visual inspection and IR studies, a large fraction of these modules were identified as allegedly healthy and unhealthy modules and they were electrically isolated from the system for currentvoltage (I-V) measurements of individual modules. The annual degradation rate for each module type is determined based on the I-V measurements.

High speed analog-to-digital conversion with silicon photonics

NASA Astrophysics Data System (ADS)

Holzwarth, C. W.; Amatya, R.; Araghchini, M.; Birge, J.; Byun, H.; Chen, J.; Dahlem, M.; DiLello, N. A.; Gan, F.; Hoyt, J. L.; Ippen, E. P.; Kärtner, F. X.; Khilo, A.; Kim, J.; Kim, M.; Motamedi, A.; Orcutt, J. S.; Park, M.; Perrott, M.; Popovic, M. A.; Ram, R. J.; Smith, H. I.; Zhou, G. R.; Spector, S. J.; Lyszczarz, T. M.; Geis, M. W.; Lennon, D. M.; Yoon, J. U.; Grein, M. E.; Schulein, R. T.; Frolov, S.; Hanjani, A.; Shmulovich, J.

2009-02-01

Sampling rates of high-performance electronic analog-to-digital converters (ADC) are fundamentally limited by the timing jitter of the electronic clock. This limit is overcome in photonic ADC's by taking advantage of the ultra-low timing jitter of femtosecond lasers. We have developed designs and strategies for a photonic ADC that is capable of 40 GSa/s at a resolution of 8 bits. This system requires a femtosecond laser with a repetition rate of 2 GHz and timing jitter less than 20 fs. In addition to a femtosecond laser this system calls for the integration of a number of photonic components including: a broadband modulator, optical filter banks, and photodetectors. Using silicon-on-insulator (SOI) as the platform we have fabricated these individual components. The silicon optical modulator is based on a Mach-Zehnder interferometer architecture and achieves a VπL of 2 Vcm. The filter banks comprise 40 second-order microring-resonator filters with a channel spacing of 80 GHz. For the photodetectors we are exploring ion-bombarded silicon waveguide detectors and germanium films epitaxially grown on silicon utilizing a process that minimizes the defect density.

FDTD modeling of anisotropic nonlinear optical phenomena in silicon waveguides.

PubMed

Dissanayake, Chethiya M; Premaratne, Malin; Rukhlenko, Ivan D; Agrawal, Govind P

2010-09-27

A deep insight into the inherent anisotropic optical properties of silicon is required to improve the performance of silicon-waveguide-based photonic devices. It may also lead to novel device concepts and substantially extend the capabilities of silicon photonics in the future. In this paper, for the first time to the best of our knowledge, we present a three-dimensional finite-difference time-domain (FDTD) method for modeling optical phenomena in silicon waveguides, which takes into account fully the anisotropy of the third-order electronic and Raman susceptibilities. We show that, under certain realistic conditions that prevent generation of the longitudinal optical field inside the waveguide, this model is considerably simplified and can be represented by a computationally efficient algorithm, suitable for numerical analysis of complex polarization effects. To demonstrate the versatility of our model, we study polarization dependence for several nonlinear effects, including self-phase modulation, cross-phase modulation, and stimulated Raman scattering. Our FDTD model provides a basis for a full-blown numerical simulator that is restricted neither by the single-mode assumption nor by the slowly varying envelope approximation.

Thermoelectric Properties of High-Doped Silicon from Room Temperature to 900 K

NASA Astrophysics Data System (ADS)

Stranz, A.; Kähler, J.; Waag, A.; Peiner, E.

2013-07-01

Silicon is investigated as a low-cost, Earth-abundant thermoelectric material for high-temperature applications up to 900 K. For the calculation of module design the Seebeck coefficient and the electrical as well as thermal properties of silicon in the high-temperature range are of great importance. In this study, we evaluate the thermoelectric properties of low-, medium-, and high-doped silicon from room temperature to 900 K. In so doing, the Seebeck coefficient, the electrical and thermal conductivities, as well as the resulting figure of merit ZT of silicon are determined.

The U.S. and Japanese amorphous silicon technology programs A comparison

NASA Technical Reports Server (NTRS)

Shimada, K.

1984-01-01

The U.S. Department of Energy/Solar Energy Research Institute Amorphous Silicon (a-Si) Solar Cell Program performs R&D on thin-film hydrogenated amorphous silicon for eventual development of stable amorphous silicon cells with 12 percent efficiency by 1988. The Amorphous Silicon Solar Cell Program in Japan is sponsored by the Sunshine Project to develop an alternate energy technology. While the objectives of both programs are to eventually develop a-Si photovoltaic modules and arrays that would produce electricity to compete with utility electricity cost, the U.S. program approach is research oriented and the Japanese is development oriented.

Stand-off transmission lines and method for making same

DOEpatents

Tuckerman, David B.

1991-01-01

Standoff transmission lines in an integrated circuit structure are formed by etching away or removing the portion of the dielectric layer separating the microstrip metal lines and the ground plane from the regions that are not under the lines. The microstrip lines can be fabricated by a subtractive process of etching a metal layer, an additive process of direct laser writing fine lines followed by plating up the lines or a subtractive/additive process in which a trench is etched over a nucleation layer and the wire is electrolytically deposited. Microstrip lines supported on freestanding posts of dielectric material surrounded by air gaps are produced. The average dielectric constant between the lines and ground plane is reduced, resulting in higher characteristic impedance, less crosstalk between lines, increased signal propagation velocities, and reduced wafer stress.

Photonic-assisted microwave signal multiplication and modulation using a silicon Mach–Zehnder modulator

PubMed Central

Long, Yun; Zhou, Linjie; Wang, Jian

2016-01-01

Photonic generation of microwave signal is obviously attractive for many prominent advantages, such as large bandwidth, low loss, and immunity to electromagnetic interference. Based on a single integrated silicon Mach–Zehnder modulator (MZM), we propose and experimentally demonstrate a simple and compact photonic scheme to enable frequency-multiplicated microwave signal. Using the fabricated integrated MZM, we also demonstrate the feasibility of microwave amplitude-shift keying (ASK) modulation based on integrated photonic approach. In proof-of-concept experiments, 2-GHz frequency-doubled microwave signal is generated using a 1-GHz driving signal. 750-MHz/1-GHz frequency-tripled/quadrupled microwave signals are obtained with a driving signal of 250 MHz. In addition, a 50-Mb/s binary amplitude coded 1-GHz microwave signal is also successfully generated. PMID:26832305

Monolithic amorphous silicon modules on continuous polymer substrate

DOE Office of Scientific and Technical Information (OSTI.GOV)

Grimmer, D.P.

This report examines manufacturing monolithic amorphous silicon modules on a continuous polymer substrate. Module production costs can be reduced by increasing module performance, expanding production, and improving and modifying production processes. Material costs can be reduced by developing processes that use a 1-mil polyimide substrate and multilayers of low-cost material for the front encapsulant. Research to speed up a-Si and ZnO deposition rates is needed to improve throughputs. To keep throughput rates compatible with depositions, multibeam fiber optic delivery systems for laser scribing can be used. However, mechanical scribing systems promise even higher throughputs. Tandem cells and production experience canmore » increase device efficiency and stability. Two alternative manufacturing processes are described: (1) wet etching and sheet handling and (2) wet etching and roll-to-roll fabrication.« less

10 Gb/s operation of photonic crystal silicon optical modulators.

PubMed

Nguyen, Hong C; Sakai, Yuya; Shinkawa, Mizuki; Ishikura, Norihiro; Baba, Toshihiko

2011-07-04

We report the first experimental demonstration of 10 Gb/s modulation in a photonic crystal silicon optical modulator. The device consists of a 200 μm-long SiO2-clad photonic crystal waveguide, with an embedded p-n junction, incorporated into an asymmetric Mach-Zehnder interferometer. The device is integrated on a SOI chip and fabricated by CMOS-compatible processes. With the bias voltage set at 0 V, we measure a V(π)L < 0.056 V∙cm. Optical modulation is demonstrated by electrically driving the device with a 2(31) - 1 bit non-return-to-zero pseudo-random bit sequence signal. An open eye pattern is observed at bitrates of 10 Gb/s and 2 Gb/s, with and without pre-emphasis of the drive signal, respectively.

Pattern manipulation via on-chip phase modulation between orbital angular momentum beams

DOE Office of Scientific and Technical Information (OSTI.GOV)

Li, Huanlu; School of Engineering, University of Glasgow, Rankine Building, Oakfield Avenue, Glasgow G12 8LP; Strain, Michael J.

2015-08-03

An integrated approach to thermal modulation of relative phase between two optical vortices with opposite chirality has been demonstrated on a silicon-on-insulator substrate. The device consists of a silicon-integrated optical vortex emitter and a phase controlled 3 dB coupler. The relative phase between two optical vortices can be actively modulated on chip by applying a voltage on the integrated heater. The phase shift is shown to be linearly proportional to applied electrical power, and the rotation angle of the interference pattern is observed to be inversely proportional to topological charge. This scheme can be used in lab-on-chip, communications and sensing applications.more » It can be intentionally implemented with other modulation elements to achieve more complicated applications.« less

Crystalline-silicon reliability lessons for thin-film modules

NASA Technical Reports Server (NTRS)

Ross, R. G., Jr.

1985-01-01

The reliability of crystalline silicon modules has been brought to a high level with lifetimes approaching 20 years, and excellent industry credibility and user satisfaction. The transition from crystalline modules to thin film modules is comparable to the transition from discrete transistors to integrated circuits. New cell materials and monolithic structures will require new device processing techniques, but the package function and design will evolve to a lesser extent. Although there will be new encapsulants optimized to take advantage of the mechanical flexibility and low temperature processing features of thin films, the reliability and life degradation stresses and mechanisms will remain mostly unchanged. Key reliability technologies in common between crystalline and thin film modules include hot spot heating, galvanic and electrochemical corrosion, hail impact stresses, glass breakage, mechanical fatigue, photothermal degradation of encapsulants, operating temperature, moisture sorption, circuit design strategies, product safety issues, and the process required to achieve a reliable product from a laboratory prototype.

Low-Cost CdTe/Silicon Tandem Solar Cells

DOE PAGES

Tamboli, Adele C.; Bobela, David C.; Kanevce, Ana; ...

2017-09-06

Achieving higher photovoltaic efficiency in single-junction devices is becoming increasingly difficult, but tandem modules offer the possibility of significant efficiency improvements. By device modeling we show that four-terminal CdTe/Si tandem solar modules offer the prospect of 25%-30% module efficiency, and technoeconomic analysis predicts that these efficiency gains can be realized at costs per Watt that are competitive with CdTe and Si single junction alternatives. The cost per Watt of the modeled tandems is lower than crystalline silicon, but slightly higher than CdTe alone. But, these higher power modules reduce area-related balance of system costs, providing increased value especially in area-constrainedmore » applications. This avenue for high-efficiency photovoltaics enables improved performance on a near-term timeframe, as well as a path to further reduced levelized cost of electricity as module and cell processes continue to advance.« less

Some tradeoffs in ingot shaping and price of solar photovoltaic modules

NASA Technical Reports Server (NTRS)

Daud, T.

1982-01-01

Growth of round ingots is cost-effective for sheets but leaves unused space when round cells are packed into a module. This reduces the packing efficiency, which approaches 95% for square cells, to about 78% and reduces the conversion efficiency of the module by the same ratio. Shaping these ingots into squares with regrowth of cut silicon improves the packing factor, but increases growth cost. The cost impact on solar cell modules was determined by considering shaping ingots in stages from full round to complete square. The sequence of module production with relevant price allocation guidelines is outlined. The severe penalties in add-on price due to increasing slice thickness and kerf are presented. Trade-offs between advantages of recycling silicon and shaping costs are developed for different slicing scenarios. It is shown that shaping results in cost saving of up to 21% for a 15 cm dia. ingot.

Low-Cost CdTe/Silicon Tandem Solar Cells

DOE Office of Scientific and Technical Information (OSTI.GOV)

Tamboli, Adele C.; Bobela, David C.; Kanevce, Ana

Achieving higher photovoltaic efficiency in single-junction devices is becoming increasingly difficult, but tandem modules offer the possibility of significant efficiency improvements. By device modeling we show that four-terminal CdTe/Si tandem solar modules offer the prospect of 25%-30% module efficiency, and technoeconomic analysis predicts that these efficiency gains can be realized at costs per Watt that are competitive with CdTe and Si single junction alternatives. The cost per Watt of the modeled tandems is lower than crystalline silicon, but slightly higher than CdTe alone. But, these higher power modules reduce area-related balance of system costs, providing increased value especially in area-constrainedmore » applications. This avenue for high-efficiency photovoltaics enables improved performance on a near-term timeframe, as well as a path to further reduced levelized cost of electricity as module and cell processes continue to advance.« less

Self-aligned nanoforest in silicon nanowire for sensitive conductance modulation.

PubMed

Seol, Myeong-Lok; Ahn, Jae-Hyuk; Choi, Ji-Min; Choi, Sung-Jin; Choi, Yang-Kyu

2012-11-14

A self-aligned and localized nanoforest structure is constructed in a top-down fabricated silicon nanowire (SiNW). The surface-to-volume ratio (SVR) of the SiNW is enhanced due to the local nanoforest formation. The conductance modulation property of the SiNWs, which is an important characteristic in sensor and charge transfer based applications, can be largely enhanced. For the selective modification of the channel region, localized Joule-heating and subsequent metal-assisted chemical etching (mac-etch) are employed. The nanoforest is formed only in the channel region without misalignment due to the self-aligned process of Joule-heating. The modified SiNW is applied to a porphyrin-silicon hybrid device to verify the enhanced conductance modulation. The charge transfer efficiency between the porphyrin and the SiNW, which is caused by external optical excitation, is clearly increased compared to the initial SiNW. The effect of the local nanoforest formation is enhanced when longer etching times and larger widths are used.

User handbook for block IV silicon solar cell modules

NASA Technical Reports Server (NTRS)

Smokler, M. I.

1982-01-01

The essential electrical and mechanical characteristics of block 4 photovoltaic solar cell modules are described. Such module characteristics as power output, nominal operating voltage, current-voltage characteristics, nominal operating cell temperature, and dimensions are tabulated. The limits of the environmental and other stress tests to which the modules are subjected are briefly described.

Fabrication of an Absorber-Coupled MKID Detector

NASA Technical Reports Server (NTRS)

Brown, Ari; Hsieh, Wen-Ting; Moseley, Samuel; Stevenson, Thomas; U-Yen, Kongpop; Wollack, Edward

2012-01-01

Absorber-coupled microwave kinetic inductance detector (MKID) arrays were developed for submillimeter and far-infrared astronomy. These sensors comprise arrays of lambda/2 stepped microwave impedance resonators patterned on a 1.5-mm-thick silicon membrane, which is optimized for optical coupling. The detector elements are supported on a 380-mm-thick micro-machined silicon wafer. The resonators consist of parallel plate aluminum transmission lines coupled to low-impedance Nb microstrip traces of variable length, which set the resonant frequency of each resonator. This allows for multiplexed microwave readout and, consequently, good spatial discrimination between pixels in the array. The transmission lines simultaneously act to absorb optical power and employ an appropriate surface impedance and effective filling fraction. The fabrication techniques demonstrate high-fabrication yield of MKID arrays on large, single-crystal membranes and sub-micron front-to-back alignment of the micro strip circuit. An MKID is a detector that operates upon the principle that a superconducting material s kinetic inductance and surface resistance will change in response to being exposed to radiation with a power density sufficient to break its Cooper pairs. When integrated as part of a resonant circuit, the change in surface impedance will result in a shift in its resonance frequency and a decrease of its quality factor. In this approach, incident power creates quasiparticles inside a superconducting resonator, which is configured to match the impedance of free space in order to absorb the radiation being detected. For this reason MKIDs are attractive for use in large-format focal plane arrays, because they are easily multiplexed in the frequency domain and their fabrication is straightforward. The fabrication process can be summarized in seven steps: (1) Alignment marks are lithographically patterned and etched all the way through a silicon on insulator (SOI) wafer, which consists of a thin silicon membrane bonded to a thick silicon handle wafer. (2) The metal microwave circuitry on the front of the membrane is patterned and etched. (3) The wafer is then temporarily bonded with wafer wax to a Pyrex wafer, with the SOI side abutting the Pyrex. (4) The silicon handle component of the SOI wafer is subsequently etched away so as to expose the membrane backside. (5) The wafer is flipped over, and metal microwave circuitry is patterned and etched on the membrane backside. Furthermore, cuts in the membrane are made so as to define the individual detector array chips. (6) Silicon frames are micromachined and glued to the silicon membrane. (7) The membranes, which are now attached to the frames, are released from the Pyrex wafer via dissolution of the wafer wax in acetone.

Microwave Hybrid Integrated Circuit Applicatins of High Transition Temperature Superconductor

NASA Astrophysics Data System (ADS)

Lu, Shih-Lin

This research work involves microwave characterization of high Tc superconducting (HTS) thin film using microstrip ring resonators, studying the nonlinear properties of HTS thin film transmission lines using two-tone intermodulation technique, coupling mechanisms and coupling factors of microstrip ring resonators side coupled to a microstrip line, two-port S-parameters measurements of GaAs MESFET at low temperature, and the design and implementation of hybrid ring resonator stabilized microwave oscillator using both metal films and superconducting films. A microstrip ring resonators operating at 10 GHz have been fabricated from YBCO HTS thin films deposited on one side of LaAl_2O_3 substrates. Below 60^circ Kelvin the measured unloaded Q of the HTS thin film microstrip ring resonators are more than 1.5 times that of gold film resonators. The two distinct but very close resonance peaks of a ring resonator side coupled to a microstrip line are experimentally identified as due to odd-mode and even-mode coupling. These two mechanisms have different characteristic equivalent circuit models and lead to different coupling coefficients and loaded resonance frequencies. The coupling factors for the two coupling modes are calculated using piecewise coupled line approximations. The two-port S-parameters measurement techniques and GaAs MESFET low temperature DC and microwave characteristics have been investigated. A system errors model including the errors caused by the line constriction at low temperature has been proposed and a temperature errors correction procedure has been developed for the two-port microwave S-parameters measurements at low temperature. The measured GaAs MESFET DC characteristics shows a 20% increase in transconductance at 77^circ K. There is also a 2 db increase in /S21/ at 77^circ K. The microwave oscillator stabilized with both metal and HTS thin film ring resonators have been studied. The tuning ability of the oscillator by a varactor diode has also been investigated. The phase noise performance of one side of the high Tc film oscillator does not show appreciable improvement over the gold film oscillator. With a varactor diode, the oscillator tuning range can be 300 MHz more. Two-tone intermodulation distortion (IMD) at 6.3 GHz in an HTS YBCO superconducting thin film microstrip transmission line on LaAl_2O _3 substrates are experimentally studied. At fixed input power, the 3rd order IMD power as function of temperature shows a minimum at a temperature around 60^circ Kelvin. With DC current applied, the second order IMD is observed and shows a strong functional dependance to the applied DC current and input power.

Nanostructured silicon for thermoelectric

NASA Astrophysics Data System (ADS)

Stranz, A.; Kähler, J.; Waag, A.; Peiner, E.

2011-06-01

Thermoelectric modules convert thermal energy into electrical energy and vice versa. At present bismuth telluride is the most widely commercial used material for thermoelectric energy conversion. There are many applications where bismuth telluride modules are installed, mainly for refrigeration. However, bismuth telluride as material for energy generation in large scale has some disadvantages. Its availability is limited, it is hot stable at higher temperatures (>250°C) and manufacturing cost is relatively high. An alternative material for energy conversion in the future could be silicon. The technological processing of silicon is well advanced due to the rapid development of microelectronics in recent years. Silicon is largely available and environmentally friendly. The operating temperature of silicon thermoelectric generators can be much higher than of bismuth telluride. Today silicon is rarely used as a thermoelectric material because of its high thermal conductivity. In order to use silicon as an efficient thermoelectric material, it is necessary to reduce its thermal conductivity, while maintaining high electrical conductivity and high Seebeck coefficient. This can be done by nanostructuring into arrays of pillars. Fabrication of silicon pillars using ICP-cryogenic dry etching (Inductive Coupled Plasma) will be described. Their uniform height of the pillars allows simultaneous connecting of all pillars of an array. The pillars have diameters down to 180 nm and their height was selected between 1 micron and 10 microns. Measurement of electrical resistance of single silicon pillars will be presented which is done in a scanning electron microscope (SEM) equipped with nanomanipulators. Furthermore, measurement of thermal conductivity of single pillars with different diameters using the 3ω method will be shown.

Method for one-to-one polishing of silicon nitride and silicon oxide

NASA Technical Reports Server (NTRS)

Babu, Suryadevara V. (Inventor); Natarajan, Anita (Inventor)

2009-01-01

The present invention provides a method of removing silicon nitride at about the same removal rate as silicon dioxide by CMP. The method utilizes a polishing slurry that includes colloidal silica abrasive particles dispersed in water and additives that modulate the silicon dioxide and silicon nitride removal rates such that they are about the same. In one embodiment of the invention, the additive is lysine or lysine mono hydrochloride in combination with picolinic acid, which is effective at a pH of about 8. In another embodiment of the invention, the additive is arginine in combination with picolinic acid, which is effective at a pH of about 10.

A user's manual for the Loaded Microstrip Antenna Code (LMAC)

NASA Technical Reports Server (NTRS)

Forrai, D. P.; Newman, E. H.

1988-01-01

The use of the Loaded Microstrip Antenna Code is described. The geometry of this antenna is shown and its dimensions are described in terms of the program outputs. The READ statements for the inputs are detailed and typical values are given where applicable. The inputs of four example problems are displayed with the corresponding output of the code given in the appendices.

Using sputter coated glass to stabilize microstrip gas chambers

DOEpatents

Gong, Wen G.

1997-01-01

By sputter coating a thin-layer of low-resistive, electronically-conductive glass on various substrates (including quartz and ceramics, thin-film Pestov glass), microstrip gas chambers (MSGC) of high gain stability, low leakage current, and a high rate capability can be fabricated. This design can make the choice of substrate less important, save the cost of ion-implantation, and use less glass material.

A microwave piezoelectric transducer with a microstrip exciter system

NASA Astrophysics Data System (ADS)

Grigor'ev, M. A.; Petrov, V. V.; Tolstikov, A. V.

1990-12-01

The paper considers a microwave electroacoustic bulk-wave transducer with a microstrip exciter system. The operation of the device is analyzed on the basis of the dependence of the dimensionless radiation resistance on the phase advance in the piezoelectric. The optimal wave resistance, the area of the piezoelectric element, the length of the short-circuited section, the SWR, and the conversion factor are determined.

Multiple-Barrier Resonant Tunneling Structures for Application in a Microwave Generator Stabilized by Microstrip Resonator

DTIC Science & Technology

2000-06-23

conductivity ( NDC ) effects in double barrier resonant tunneling structures (DBRTS) prove the extremely fast frequency response of charge transport (less...UNCLASSIFIED Defense Technical Information Center Compilation Part Notice ADP013131 TITLE: Multiple-Barrier Resonant Tunneling Structures for...Institute Multiple-barrier resonant tunneling structures for application in a microwave generator stabilized by microstrip resonator S. V. Evstigneev, A. L

Reducing Cross-Polarized Radiation From A Microstrip Antenna

NASA Technical Reports Server (NTRS)

Huang, John

1991-01-01

Change in configuration of feed of nominally linearly polarized microstrip-patch transmitting array antenna reduces cross-polarized component of its radiation. Patches fed on opposing sides, in opposite phases. Combination of spatial symmetry and temporal asymmetry causes copolarized components of radiation from fundamental modes of patches to reinforce each other and cross-polarized components of radiation from higher-order modes to cancel each other.

The 20 GHz circularly polarized, high temperature superconducting microstrip antenna array

NASA Technical Reports Server (NTRS)

Morrow, Jarrett D.; Williams, Jeffery T.; Long, Stuart A.; Wolfe, John C.

1994-01-01

The primary goal was to design and characterize a four-element, 20 GHz, circularly polarized microstrip patch antenna fabricated from YBa2Cu3O(x) superconductor. The purpose is to support a high temperature superconductivity flight communications experiment between the space shuttle orbiter and the ACTS satellite. This study is intended to provide information into the design, construction, and feasibility of a circularly polarized superconducting 20 GHz downlink or cross-link antenna. We have demonstrated that significant gain improvements can be realized by using superconducting materials for large corporate fed array antennas. In addition, we have shown that when constructed from superconducting materials, the efficiency, and therefore the gain, of microstrip patches increases if the substrate is not so thick that the dominant loss mechanism for the patch is radiation into the surface waves of the conductor-backed substrate. We have considered two design configurations for a superconducting 20 GHz four-element circularly polarized microstrip antenna array. The first is the Huang array that uses properly oriented and phased linearly polarized microstrip patch elements to realize a circularly polarized pattern. The second is a gap-coupled array of circularly polarized elements. In this study we determined that although the Huang array operates well on low dielectric constant substrates, its performance becomes extremely sensitive to mismatches, interelement coupling, and design imperfections for substrates with high dielectric constants. For the gap-coupled microstrip array, we were able to fabricate and test circularly polarized elements and four-element arrays on LaAlO3 using sputtered copper films. These antennas were found to perform well, with relatively good circular polarization. In addition, we realized a four-element YBa2Cu3O(x) array of the same design and measured its pattern and gain relative to a room temperature copper array. The patterns were essentially the same as that for the copper array. The measured gain of the YBCO antenna was greater than that for the room temperature copper design at temperatures below 82K, reaching a value of 3.4 dB at the lowest temperatures.

Silicon Heterojunction System Field Performance

DOE PAGES

Jordan, Dirk C.; Deline, Chris; Johnston, Steve; ...

2017-11-17

A silicon heterostructure photovoltaic system fielded for 10 years has been investigated in detail. The system has shown degradation, but at a rate similar to an average Si system, and still within the module warranty level. The power decline is dominated by a nonlinear Voc loss rather than more typical changes in Isc or Fill Factor. Modules have been evaluated using multiple techniques including: dark and light I-V measurement, Suns-Voc, thermal imaging, and quantitative electroluminescence. All techniques indicate that recombination and series resistance in the cells have increased along with a decrease of factor 2 in minority carrier lifetime. Performancemore » changes are fairly uniform across the module, indicating changes occur primarily within the cells.« less

Hot-spot durability testing of amorphous cells and modules

NASA Technical Reports Server (NTRS)

Gonzalez, Charles; Jetter, Elizabeth

1985-01-01

This paper discusses the results of a study to determine the hot-spot susceptibility of amorphous-silicon (a-Si) cells and modules, and to provide guidelines for reducing that susceptibility. Amorphous-Si cells are shown to have hot-spot susceptibility levels similar to crystalline-silicon (C-Si) cells. This premise leads to the fact that the same general guidelines must apply to protecting a-Si cells from hot-spot stressing that apply to C-Si cells. Recommendations are made on ways of reducing a-Si module hot-spot susceptibility including the traditional method of using bypass diodes and a new method unique to thin-film cells, limiting the string current by limiting cell area.

49.6 Gb/s direct detection DMT transmission over 40 km single mode fibre using an electrically packaged silicon photonic modulator.

PubMed

Lacava, C; Cardea, I; Demirtzioglou, I; Khoja, A E; Ke, Li; Thomson, D J; Ruan, X; Zhang, F; Reed, G T; Richardson, D J; Petropoulos, P

2017-11-27

We present the characterization of a silicon Mach-Zehnder modulator with electrical packaging and show that it exhibits a large third-order intermodulation spurious-free dynamic range (> 100 dB Hz 2/3 ). This characteristic renders the modulator particularly suitable for the generation of high spectral efficiency discrete multi-tone signals and we experimentally demonstrate a single-channel, direct detection transmission system operating at 49.6 Gb/s, exhibiting a baseband spectral efficiency of 5 b/s/Hz. Successful transmission is demonstrated over various lengths of single mode fibre up to 40 km, without the need of any amplification or dispersion compensation.

Construction and first beam-tests of silicon-tungsten prototype modules for the CMS High Granularity Calorimeter for HL-LHC

NASA Astrophysics Data System (ADS)

Jain, S.

2017-03-01

The High Granularity Calorimeter (HGCAL) is the technology choice of the CMS collaboration for the endcap calorimetry upgrade planned to cope with the harsh radiation and pileup environment at the High Luminosity-LHC . The HGCAL is realized as a sampling calorimeter, including an electromagnetic compartment comprising 28 layers of silicon pad detectors with pad areas of 0.5-01. cm2 interspersed with absorbers made from tungsten and copper to form a highly compact and granular device. Prototype modules, based on hexagonal silicon pad sensors, with 128 channels, have been constructed and tested in beams at FNAL and at CERN. The modules include many of the features required for this challenging detector, including a PCB glued directly to the sensor, using through-hole wire-bonding for signal readout and 5 mm spacing between layers—including the front-end electronics and all services. Tests in 2016 have used an existing front-end chip —Skiroc2 (designed for the CALICE experiment for ILC). We present results from first tests of these modules both in the laboratory and with beams of electrons, pions and protons, including noise performance, calibration with mips and electron signals.

Control of Heat and Charge Transport in Nanostructured Hybrid Materials

DTIC Science & Technology

2015-07-21

measurements in our groups have yielded device ZT values of 0.4 on thermoelectric modules consisting of vertically oriented silicon nanowires . This is... nanowires with aspect ratio’s exceeding 10,000. Temperature differences as high as 800 °C are achievable for both types. The bulk nanostructured...thermal conductivity of the silicon nanostructures. Specifically, experiments on an array of 20 nm diameter vertically oriented silicon nanowires have

30/20 GHz spacecraft GaAs FET solid state transmitter for trunking and customer-premise-service application

NASA Technical Reports Server (NTRS)

Saunier, P.; Nelson, S.

1983-01-01

Sixteen 30 dB 0.5 W amplifier modules were combined to satisfy the requirement for a graceful degradation. If one module fails, the output power drops by only 0.43 dB. Also, by incorporating all the gain stages within the combiner the overall combining efficiency is maximized. A 16 way waveguide divider combiner was developed to minimize the insertion loss associated with such a large corporate feed structure. Tests showed that the 16 way insertion loss was less than 0.5 dB. To minimize loss, a direct transition from waveguide to microstrip, using a finline on duroid substrate, was developed. The FETs fabricated on MBE grown material, demonstrated superior performances. For example, a 600 micrometer device was capable of 320 mW output power with 5 dB gain and 26.6% efficiency at 21 GHz. The 16 module amplifier gave 8.95 W saturated output power with 30 dB gain. The overall efficiency was 9%. The 3 dB bandwidth was 2.5 GHz. At 17.7 GHz the amplifier had 5 W output power and at 20.2 GHz it still had 4.4 W.

A MoTe2-based light-emitting diode and photodetector for silicon photonic integrated circuits.

PubMed

Bie, Ya-Qing; Grosso, Gabriele; Heuck, Mikkel; Furchi, Marco M; Cao, Yuan; Zheng, Jiabao; Bunandar, Darius; Navarro-Moratalla, Efren; Zhou, Lin; Efetov, Dmitri K; Taniguchi, Takashi; Watanabe, Kenji; Kong, Jing; Englund, Dirk; Jarillo-Herrero, Pablo

2017-12-01

One of the current challenges in photonics is developing high-speed, power-efficient, chip-integrated optical communications devices to address the interconnects bottleneck in high-speed computing systems. Silicon photonics has emerged as a leading architecture, in part because of the promise that many components, such as waveguides, couplers, interferometers and modulators, could be directly integrated on silicon-based processors. However, light sources and photodetectors present ongoing challenges. Common approaches for light sources include one or few off-chip or wafer-bonded lasers based on III-V materials, but recent system architecture studies show advantages for the use of many directly modulated light sources positioned at the transmitter location. The most advanced photodetectors in the silicon photonic process are based on germanium, but this requires additional germanium growth, which increases the system cost. The emerging two-dimensional transition-metal dichalcogenides (TMDs) offer a path for optical interconnect components that can be integrated with silicon photonics and complementary metal-oxide-semiconductors (CMOS) processing by back-end-of-the-line steps. Here, we demonstrate a silicon waveguide-integrated light source and photodetector based on a p-n junction of bilayer MoTe 2 , a TMD semiconductor with an infrared bandgap. This state-of-the-art fabrication technology provides new opportunities for integrated optoelectronic systems.

A MoTe2-based light-emitting diode and photodetector for silicon photonic integrated circuits

NASA Astrophysics Data System (ADS)

Bie, Ya-Qing; Grosso, Gabriele; Heuck, Mikkel; Furchi, Marco M.; Cao, Yuan; Zheng, Jiabao; Bunandar, Darius; Navarro-Moratalla, Efren; Zhou, Lin; Efetov, Dmitri K.; Taniguchi, Takashi; Watanabe, Kenji; Kong, Jing; Englund, Dirk; Jarillo-Herrero, Pablo

2017-12-01

One of the current challenges in photonics is developing high-speed, power-efficient, chip-integrated optical communications devices to address the interconnects bottleneck in high-speed computing systems. Silicon photonics has emerged as a leading architecture, in part because of the promise that many components, such as waveguides, couplers, interferometers and modulators, could be directly integrated on silicon-based processors. However, light sources and photodetectors present ongoing challenges. Common approaches for light sources include one or few off-chip or wafer-bonded lasers based on III-V materials, but recent system architecture studies show advantages for the use of many directly modulated light sources positioned at the transmitter location. The most advanced photodetectors in the silicon photonic process are based on germanium, but this requires additional germanium growth, which increases the system cost. The emerging two-dimensional transition-metal dichalcogenides (TMDs) offer a path for optical interconnect components that can be integrated with silicon photonics and complementary metal-oxide-semiconductors (CMOS) processing by back-end-of-the-line steps. Here, we demonstrate a silicon waveguide-integrated light source and photodetector based on a p-n junction of bilayer MoTe2, a TMD semiconductor with an infrared bandgap. This state-of-the-art fabrication technology provides new opportunities for integrated optoelectronic systems.

Standardization of Schwarz-Christoffel transformation for engineering design of semiconductor and hybrid integrated-circuit elements

NASA Astrophysics Data System (ADS)

Yashin, A. A.

1985-04-01

A semiconductor or hybrid structure into a calculable two-dimensional region mapped by the Schwarz-Christoffel transformation and a universal algorithm can be constructed on the basis of Maxwell's electro-magnetic-thermal similarity principle for engineering design of integrated-circuit elements. The design procedure involves conformal mapping of the original region into a polygon and then the latter into a rectangle with uniform field distribution, where conductances and capacitances are calculated, using tabulated standard mapping functions. Subsequent synthesis of a device requires inverse conformal mapping. Devices adaptable as integrated-circuit elements are high-resistance film resistors with periodic serration, distributed-resistance film attenuators with high transformation ratio, coplanar microstrip lines, bipolar transistors, directional couplers with distributed coupling to microstrip lines for microwave bulk devices, and quasirregular smooth matching transitions from asymmetric to coplanar microstrip lines.

A wide-band dual-polarized VHF microstrip antenna for global sensing of sea ice thickness

NASA Technical Reports Server (NTRS)

Huang, John; Hussein, Ziad; Petros, Argy

2005-01-01

A VHF microstrip patch antenna was developed to achieve a bandwidth of 45 MHz (30%) from 127 MHz to 172 MHz with dual-linear-polarization capability. This microstrip antenna used foam substrates and dual stacked patches with capacitive probe feeds to achieve wide bandwidth. Four such capacitive feeds were used to achieve dual polarizations with less than -20 dB of cross-polarization level. Twenty-four shorting pins were used on the lower patch to achieve acceptable isolation between the four feed probes. This antenna has a measured gain of 8.5 dB at 137 MHz and 10 dB at 162 MHz. By using the Method of Moments technique, multipath scattering patterns were calculated when the antenna is mounted on the outside of a Twin Otter aircraft.

Simplified microstrip discontinuity modeling using the transmission line matrix method interfaced to microwave CAD

NASA Astrophysics Data System (ADS)

Thompson, James H.; Apel, Thomas R.

1990-07-01

A technique for modeling microstrip discontinuities is presented which is derived from the transmission line matrix method of solving three-dimensional electromagnetic problems. In this technique the microstrip patch under investigation is divided into an integer number of square and half-square (triangle) subsections. An equivalent lumped-element model is calculated for each subsection. These individual models are then interconnected as dictated by the geometry of the patch. The matrix of lumped elements is then solved using either of two microwave CAD software interfaces with each port properly defined. Closed-form expressions for the lumped-element representation of the individual subsections is presented and experimentally verified through the X-band frequency range. A model demonstrating the use of symmetry and block construction of a circuit element is discussed, along with computer program development and CAD software interface.

Input impedance of a probe-fed circular microstrip antenna with thick substrate

NASA Technical Reports Server (NTRS)

Davidovitz, M.; Lo, Y. T.

1986-01-01

A method of computing the input impedance for the probe fed circular microstrip antenna with thick dielectric substrate is presented. Utilizing the framework of the cavity model, the fields under the microstrip patch are expanded in a set of modes satisfying the boundary conditions on the eccentrically located probe, as well as on the cavity magnetic wall. A mode-matching technique is used to solve for the electric field at the junction between the cavity and the coaxial feed cable. The reflection coefficient of the transverse electromagnetic (TEM) mode incident in the coaxial cable is determined, from which the input impedance of the antenna is computed. Measured data are presented to verify the theoretical calculations. Results of the computation of various losses for the circular printed antenna as a function of substrate thickness are also included.

Manipulation of propagating spin waves in straight and curved magnetic microstrips

NASA Astrophysics Data System (ADS)

Haldar, Arabinda; Liu, Hau-Jian; Schultheiss, Helmut; Vogt, Katrin; Hoffmann, Axel; Buchanan, Kristen

2012-02-01

The main challenges in realizing magnonics devices are the generation, manipulation and detection of spin waves, especially in metallic magnetic materials where the length scales are of interest for applications. We have studied the propagation of spin waves in transversely magnetized Permalloy (Py) microstrips of different shapes using micro-Brillouin light scattering. The Py stripe was 30-nm thick, several micrometers wide and >50 μm long. Spin waves were excited in the Py strip using a 2-μm wide antenna. We compare the spin wave propagation along a straight wire to the propagation along a magnetic microstrip with a smooth bend. We will also discuss the use of a current through a gold wire under the Permalloy to provide a local magnetic field to maintain a transverse magnetization around the bend.

Gap Excitations and Series Loads in Microstrip Lines: Equivalent Network Characterization with Application to THz Circuits

NASA Technical Reports Server (NTRS)

Neto, Andrea; Siegel, Peter H.

2001-01-01

At submillimeter wavelengths typical gap discontinuities in microstrip, CPW lines or at antenna terminals, which might contain diodes or active elements, cannot be viewed as simple quasi statically evaluated lumped elements. Planar Schottky diodes at 2.5 THz, for example, have a footprint that is comparable to a wavelength. Thus, apart from modelling the diodes themselves, the connection with their exciting elements (antennas or microstrip) gives rise to parasitics. Full wave or strictly numeric approaches can be used to account for these parasitics but at the expense of generality of the solution and the CPU time of the calculation. In this paper an equivalent network is derived that accurately accounts for large gap discontinuities (with respect to a wavelength) without suffering from the limitations of available numeric techniques.

Stand-off transmission lines and method for making same

DOEpatents

Tuckerman, D.B.

1991-05-21

Standoff transmission lines in an integrated circuit structure are formed by etching away or removing the portion of the dielectric layer separating the microstrip metal lines and the ground plane from the regions that are not under the lines. The microstrip lines can be fabricated by a subtractive process of etching a metal layer, an additive process of direct laser writing fine lines followed by plating up the lines or a subtractive/additive process in which a trench is etched over a nucleation layer and the wire is electrolytically deposited. Microstrip lines supported on freestanding posts of dielectric material surrounded by air gaps are produced. The average dielectric constant between the lines and ground plane is reduced, resulting in higher characteristic impedance, less crosstalk between lines, increased signal propagation velocities, and reduced wafer stress. 16 figures.

New 2-D dosimetric technique for radiotherapy based on planar thermoluminescent detectors.

PubMed

Olko, P; Marczewska, B; Czopyk, L; Czermak, M A; Klosowski, M; Waligórski, M P R

2006-01-01

At the Institute of Nuclear Physics of the Polish Academy of Sciences (IFJ) in Kraków, a two-dimensional (2-D) thermoluminescence (TL) dosimetry system was developed within the MAESTRO (Methods and Advanced Equipment for Simulation and Treatment in Radio-Oncology) 6 Framework Programme and tested by evaluating 2-D dose distributions around radioactive sources. A thermoluminescent detector (TLD) foil was developed, of thickness 0.3 mm and diameter 60 mm, containing a mixture of highly sensitive LiF:Mg,Cu,P powder and Ethylene TetraFluoroEthylene (ETFE) polymer. Foil detectors were irradiated with (226)Ra brachytherapy sources and a (90)Sr/(90)Y source. 2-D dose distributions were evaluated using a prototype planar (diameter 60 mm) reader, equipped with a 12 bit Charge Coupled Devices (CCD) PCO AG camera, with a resolution of 640 x 480 pixels. The new detectors, showing a spatial resolution better than 0.5 mm and a measurable dose range typical for radiotherapy, can find many applications in clinical dosimetry. Another technology applicable to clinical dosimetry, also developed at IFJ, is the Si microstrip detector of size 95 x 95 mm(2), which may be used to evaluate the dose distribution with a spatial resolution of 120 microm along one direction, in real-time mode. The microstrip and TLD technology will be further improved, especially to develop detectors of larger area, and to make them applicable to some advanced radiotherapy modalities, such as intensity modulated radiotherapy (IMRT) or proton radiotherapy.

Silicon Photonics Transmitter with SOA and Semiconductor Mode-Locked Laser.

PubMed

Moscoso-Mártir, Alvaro; Müller, Juliana; Hauck, Johannes; Chimot, Nicolas; Setter, Rony; Badihi, Avner; Rasmussen, Daniel E; Garreau, Alexandre; Nielsen, Mads; Islamova, Elmira; Romero-García, Sebastián; Shen, Bin; Sandomirsky, Anna; Rockman, Sylvie; Li, Chao; Sharif Azadeh, Saeed; Lo, Guo-Qiang; Mentovich, Elad; Merget, Florian; Lelarge, François; Witzens, Jeremy

2017-10-24

We experimentally investigate an optical link relying on silicon photonics transmitter and receiver components as well as a single section semiconductor mode-locked laser as a light source and a semiconductor optical amplifier for signal amplification. A transmitter based on a silicon photonics resonant ring modulator, an external single section mode-locked laser and an external semiconductor optical amplifier operated together with a standard receiver reliably supports 14 Gbps on-off keying signaling with a signal quality factor better than 7 for 8 consecutive comb lines, as well as 25 Gbps signaling with a signal quality factor better than 7 for one isolated comb line, both without forward error correction. Resonant ring modulators and Germanium waveguide photodetectors are further hybridly integrated with chip scale driver and receiver electronics, and their co-operability tested. These experiments will serve as the basis for assessing the feasibility of a silicon photonics wavelength division multiplexed link relying on a single section mode-locked laser as a multi-carrier light source.

Experimental evidence of trap level modulation in silicon nitride thin films by hydrogen annealing

NASA Astrophysics Data System (ADS)

Seki, Harumi; Kamimuta, Yuuichi; Mitani, Yuichiro

2018-06-01

The energy level of electron traps in silicon nitride (SiN x ) thin films was investigated by discharging current transient spectroscopy (DCTS). Results indicate that the trap level of the SiN x thin films becomes deeper with decreasing composition (N/Si) and shallower after hydrogen annealing. The dependence of the trap level on the SiN x composition and the modulation of the trap level by hydrogen annealing are possibly related to the change in the number of Si–H bonds in the SiN x thin films.

The Automated Array Assembly Task of the Low-cost Silicon Solar Array Project, Phase 2

NASA Technical Reports Server (NTRS)

Coleman, M. G.; Grenon, L.; Pastirik, E. M.; Pryor, R. A.; Sparks, T. G.

1978-01-01

An advanced process sequence for manufacturing high efficiency solar cells and modules in a cost-effective manner is discussed. Emphasis is on process simplicity and minimizing consumed materials. The process sequence incorporates texture etching, plasma processes for damage removal and patterning, ion implantation, low pressure silicon nitride deposition, and plated metal. A reliable module design is presented. Specific process step developments are given. A detailed cost analysis was performed to indicate future areas of fruitful cost reduction effort. Recommendations for advanced investigations are included.

The finite ground plane effect on the microstrip antenna radiation patterns

NASA Technical Reports Server (NTRS)

Huang, J.

1983-01-01

The uniform geometrical theory of diffraction (GTD) is employed for calculating the edge diffracted fields from the finite ground plane of a microstrip antenna. The source field from the radiating patch is calculated by two different methods: the slot theory and the modal expansion theory. Many numerical and measured results are presented to demonstrate the accuracy of the calculations and the finite ground plane edge effect.

Smart Sensing and Dynamic Fitting for Enhanced Comfort and Performance of Prosthetics

DTIC Science & Technology

2017-10-01

studying microstrip resonators for bio- impedance measurement. For actuation, we have 1) improved and de -bugged the prosthetic interface control ...studying microstrip resonators for bio‐impedance measurement. For actuation, we have 1) improved and de -bugged the prosthetic interface control ...shall be subject to any penalty for failing to comply with a collection of information if it does not display a currently valid OMB control number

The design and fabrication of microstrip omnidirectional array antennas for aerospace applications

NASA Technical Reports Server (NTRS)

Campbell, T. G.; Appleton, M. W.; Lusby, T. K.

1976-01-01

A microstrip antenna design concept was developed that will provide quasi-omnidirectional radiation pattern characteristics about cylindrical and conical aerospace structures. L-band and S-band antenna arrays were designed, fabricated, and, in some cases, flight tested for rocket, satellite, and aircraft drone applications. Each type of array design is discussed along with a thermal cover design that was required for the sounding rocket applications.

A Circular Microstrip Antenna Sensor for Direction Sensitive Strain Evaluation †

PubMed Central

Herbko, Michal

2018-01-01

In this paper, a circular microstrip antenna for stress evaluation is studied. This kind of microstrip sensor can be utilized in structural health monitoring systems. Reflection coefficient S11 is measured to determine deformation/strain value. The proposed sensor is adhesively connected to the studied sample. Applied strain causes a change in patch geometry and influences current distribution both in patch and ground plane. Changing the current flow in patch influences the value of resonant frequency. In this paper, two different resonant frequencies were analysed because in each case, different current distributions in patch were obtained. The sensor was designed for operating frequency of 2.5 GHz (at fundamental mode), which results in a diameter less than 55 mm. Obtained sensitivity was up to 1 MHz/100 MPa, resolution depends on utilized vector network analyser. Moreover, the directional characteristics for both resonant frequencies were defined, studied using numerical model and verified by measurements. Thus far, microstrip antennas have been used in deformation measurement only if the direction of external force was well known. Obtained directional characteristics of the sensor allow the determination of direction and value of stress by one sensor. This method of measurement can be an alternative to the rosette strain gauge. PMID:29361697

Integration of electro-absorption modulator in a vertical-cavity surface-emitting laser

NASA Astrophysics Data System (ADS)

Marigo-Lombart, L.; Calvez, S.; Arnoult, A.; Rumeau, A.; Viallon, C.; Thienpont, H.; Panajotov, K.; Almuneau, G.

2018-02-01

VCSELs became dominant laser sources in many short optical link applications such as datacenter, active cables, etc. Actual standards and commercialized VCSEL are providing 25 Gb/s data rates, but new solutions are expected to settle the next device generation enabling 100 Gb/s. Directly modulated VCSEL have been extensively studied and improved to reach bandwidths in the range of 26-32 GHz [Chalmers, TU Berlin], however at the price of increased applied current and thus reduced device lifetime. Furthermore, the relaxation oscillation limit still subsists with this solution. Thus, splitting the emission and the modulation functions as done with DFB lasers is a very promising alternative [TI-Tech, TU Berlin]. Here, we study the vertical integration of an ElectroAbsorption Modulator (EAM) within a VCSEL, where the output light of the VCSEL is modulated through the EAM section. In our original design, we finely optimized the EAM design to maximize the modulation depth by implementing perturbative Quantum Confined Stark Effect (QCSE) calculations, while designing the vertical integration of the EAM without penalty on the VCSEL static performances. We will present the different fabricated vertical structures, as well as the experimental electrical and optical static measurements for those configurations demonstrating a very good agreement with the reflectivity and absorption simulations obtained for both the VCSEL and the EAM-VCSEL structures. Finally, to reach very high frequency modulation we studied the BCB electrical properties up to 110 GHz and investigated coplanar and microstrip lines access to decrease both the parasitic capacitance and the influence of the substrate.

Micro benchtop optics by bulk silicon micromachining

DOEpatents

Lee, Abraham P.; Pocha, Michael D.; McConaghy, Charles F.; Deri, Robert J.

2000-01-01

Micromachining of bulk silicon utilizing the parallel etching characteristics of bulk silicon and integrating the parallel etch planes of silicon with silicon wafer bonding and impurity doping, enables the fabrication of on-chip optics with in situ aligned etched grooves for optical fibers, micro-lenses, photodiodes, and laser diodes. Other optical components that can be microfabricated and integrated include semi-transparent beam splitters, micro-optical scanners, pinholes, optical gratings, micro-optical filters, etc. Micromachining of bulk silicon utilizing the parallel etching characteristics thereof can be utilized to develop miniaturization of bio-instrumentation such as wavelength monitoring by fluorescence spectrometers, and other miniaturized optical systems such as Fabry-Perot interferometry for filtering of wavelengths, tunable cavity lasers, micro-holography modules, and wavelength splitters for optical communication systems.

Low cost solar array project: Cell and module formation research area. Process research of non-CZ silicon material

NASA Technical Reports Server (NTRS)

1983-01-01

Meniscus coates tests, back junction formation using a new boron containing liquid, tests of various SiO2 and boron containing liquids, pelletized silicon for replenishment during web growth, and ion implantation compatibility/feasibility study are discussed.

Silicon induced systemic defense responses in perennial ryegrass against Magnaporthe oryzae infection

USDA-ARS?s Scientific Manuscript database

Sustainable integrated disease management for gray leaf spot of perennial ryegrass may involve use of plant defense elicitors with compatible traditional fungicides to reduce disease incidence and severity. Silicon (Si) is a potential inducer or modulator of plant defenses against different pathogen...

Process research of non-cz silicon material. Low cost solar array project, cell and module formation research area

NASA Technical Reports Server (NTRS)

1982-01-01

Liquid diffusion masks and liquid applied dopants to replace the CVD Silox masking and gaseous diffusion operations specified for forming junctions in the Westinghouse baseline process sequence for producing solar cells from dendritic web silicon were investigated.

Silicon based mechanic-photonic wavelength converter for infrared photo-detection

NASA Astrophysics Data System (ADS)

Rudnitsky, Arkady; Agdarov, Sergey; Gulitsky, Konstantin; Zalevsky, Zeev

2017-06-01

In this paper we present a new concept to realize a mechanic-photonic wavelength converter in silicon chip by construction of nanorods and by modulating the input illumination at temporal frequency matched to the mechanic resonance of the nanorods. The use case is to realize an infrared photo detector in silicon which is not based on absorption but rather on the mechanical interaction of the nanorods with the incoming illumination.

Establishment of a PID Pass/Fail Test for Crystalline Silicon Modules by Examining Field Performance for Five Years: Preprint

DOE Office of Scientific and Technical Information (OSTI.GOV)

Hacke, Peter L

In an experiment with five module designs and multiple replicas, it is found that crystalline silicon cell modules that can pass a criterion of less than 5 percent power degradation in stress test conditions of 60 degrees Celsius, 85 percent relative humidity (RH), 96 h, and nameplate-rated system voltage bias show no power degradation by potential induced degradation in the range of 4-6 years duration in the Florida, USA environment. This data suggests that this chamber stress level is useful as a pass/fail criterion for PID, and will help ensure against degradation by system voltage stress in Florida, or lessmore » stressful climates, for at least 5 years.« less

SMART- Small Motor AerRospace Technology

NASA Astrophysics Data System (ADS)

Balucani, M.; Crescenzi, R.; Ferrari, A.; Guarrea, G.; Pontetti, G.; Orsini, F.; Quattrino, L.; Viola, F.

2004-11-01

This paper presents the "SMART" (Small Motor AerRospace Tecnology) propulsion system, constituted of microthrusters array realised by semiconductor technology on silicon wafers. SMART system is obtained gluing three main modules: combustion chambers, igniters and nozzles. The module was then filled with propellant and closed by gluing a piece of silicon wafer in the back side of the combustion chambers. The complete assembled module composed of 25 micro- thrusters with a 3 x 5 nozzle is presented. The measurement showed a thrust of 129 mN and impulse of 56,8 mNs burning about 70mg of propellant for the micro-thruster with nozzle and a thrust of 21 mN and impulse of 8,4 mNs for the micro-thruster without nozzle.

Performance degradation and cleaning of photovoltaic arrays

NASA Technical Reports Server (NTRS)

Sheskin, T. J.; Chang, G. C.; Cull, R. C.; Knapp, W. D.

1982-01-01

NASA tests results from an 18 mo program of cleaning silicone-encapsulated and glass fronted solar cell panels in urban and desert environments to examine the effects of cleaning on module performance are reported. The panels were cleaned on weekly, monthly, quarterly, or semi-annual basis, while other panels of the same construction were not cleaned and served as controls. Commercially-available detergents and city water were employed for the tests, and the measurements were maintained of the modules' continuing short-circuit current output. The decay of the output was determined by least square regression analyses. Performance degradation was noticeably less in glass covered, rather than silicone-encapsulated modules which decayed faster in urban than in desert environments. Lower frequency cleanings are recommended where labor costs are high.

40 Gbit/s low-loss silicon optical modulator based on a pipin diode.

PubMed

Ziebell, Melissa; Marris-Morini, Delphine; Rasigade, Gilles; Fédéli, Jean-Marc; Crozat, Paul; Cassan, Eric; Bouville, David; Vivien, Laurent

2012-05-07

40 Gbit/s low-loss silicon optical modulators are demonstrated. The devices are based on the carrier depletion effect in a pipin diode to generate a good compromise between high efficiency, speed and low optical loss. The diode is embedded in a Mach-Zehnder interferometer, and a self-aligned fabrication process was used to obtain precise localization of the active p-doped region in the middle of the waveguide. Using a 4.7 mm (resp. 0.95 mm) long phase shifter, the modulator exhibits an extinction ratio of 6.6 dB (resp. 3.2 dB), simultaneously with an optical loss of 6 dB (resp. 4.5 dB) at the same operating point.

Silicon photonics plasma-modulators with advanced transmission line design.

PubMed

Merget, Florian; Azadeh, Saeed Sharif; Mueller, Juliana; Shen, Bin; Nezhad, Maziar P; Hauck, Johannes; Witzens, Jeremy

2013-08-26

We have investigated two novel concepts for the design of transmission lines in travelling wave Mach-Zehnder interferometer based Silicon Photonics depletion modulators overcoming the analog bandwidth limitations arising from cross-talk between signal lines in push-pull modulators and reducing the linear losses of the transmission lines. We experimentally validate the concepts and demonstrate an E/O -3 dBe bandwidth of 16 GHz with a 4V drive voltage (in dual drive configuration) and 8.8 dB on-chip insertion losses. Significant bandwidth improvements result from suppression of cross-talk. An additional bandwidth enhancement of ~11% results from a reduction of resistive transmission line losses. Frequency dependent loss models for loaded transmission lines and E/O bandwidth modeling are fully verified.

Fabrication and characterization of silicon quantum dots in Si-rich silicon carbide films.

PubMed

Chang, Geng-Rong; Ma, Fei; Ma, Dayan; Xu, Kewei

2011-12-01

Amorphous Si-rich silicon carbide films were prepared by magnetron co-sputtering and subsequently annealed at 900-1100 degrees C. After annealing at 1100 degrees C, this configuration of silicon quantum dots embedded in amorphous silicon carbide formed. X-ray photoelectron spectroscopy was used to study the chemical modulation of the films. The formation and orientation of silicon quantum dots were characterized by glancing angle X-ray diffraction, which shows that the ratio of silicon and carbon significantly influences the species of quantum dots. High-resolution transmission electron microscopy investigations directly demonstrated that the formation of silicon quantum dots is heavily dependent on the annealing temperatures and the ratio of silicon and carbide. Only the temperature of about 1100 degrees C is enough for the formation of high-density and small-size silicon quantum dots due to phase separation and thermal crystallization. Deconvolution of the first order Raman spectra shows the existence of a lower frequency peak in the range 500-505 cm(-1) corresponding to silicon quantum dots with different atom ratio of silicon and carbon.

Radio Frequency (RF) Micro-Electromechanical Systems (MEMS) Switches for Space Communications

NASA Technical Reports Server (NTRS)

Simons, Rainee N.; Ponchak, George E.; Scardelletti, Maximillian C.; Varaljay, Nicholas C.

2000-01-01

Micro-electromechanical systems (MEMS) is an emerging technology for radio frequency (RF) systems because it has the potential to dramatically decrease loss and improve efficiency. In this paper, we address the design and fabrication of novel MEMS switches being developed at NASA Glenn Research Center. Two types of switches are being developed: a microstrip series single pole single throw (SPST) switch and a coplanar waveguide (CPW) series SPST and single pole double throw (SPDT) switches. These are being fabricated as an integral part of 50 Ohm microstrip and CPW RF integrated circuits using microfabrication techniques. The construction of the switch relies on a cantilever beam that is partially supported by a dielectric post. The cantilever beam is electro-magnetically actuated. To decrease stiction, a Si3N4 thin film is deposited over the contact area. Thus, when the switch is closed, the ON-state insertion loss is governed by the parallel plate capacitance formed by the two contacts. The isolation in the OFF-state is governed by the parasitic capacitance when the cantilever is in the up position. RF MEMS switches have been demonstrated with 80% lower insertion loss than conventional solid state devices (GaAs Metal Semiconductor Field Effect Transistors (MESFETs) and Silicon PIN diodes) based switches. For example, a conventional GaAs five-bit phase shifter which is required for beam steering in a phased array antenna has approximately 7 dB of insertion loss at 26.5 GHz where as a comparable MEMS based phase shifter is expected to have only 2 dB of insertion loss. This translates into 56% lower power dissipation and therefore decreases the thermal load on the spacecraft and also reduces the power amplifier requirements. These benefits will enable NASA to build the next generation of deep space science crafts and micro/nano satellites.

Printable nanostructured silicon solar cells for high-performance, large-area flexible photovoltaics.

PubMed

Lee, Sung-Min; Biswas, Roshni; Li, Weigu; Kang, Dongseok; Chan, Lesley; Yoon, Jongseung

2014-10-28

Nanostructured forms of crystalline silicon represent an attractive materials building block for photovoltaics due to their potential benefits to significantly reduce the consumption of active materials, relax the requirement of materials purity for high performance, and hence achieve greatly improved levelized cost of energy. Despite successful demonstrations for their concepts over the past decade, however, the practical application of nanostructured silicon solar cells for large-scale implementation has been hampered by many existing challenges associated with the consumption of the entire wafer or expensive source materials, difficulties to precisely control materials properties and doping characteristics, or restrictions on substrate materials and scalability. Here we present a highly integrable materials platform of nanostructured silicon solar cells that can overcome these limitations. Ultrathin silicon solar microcells integrated with engineered photonic nanostructures are fabricated directly from wafer-based source materials in configurations that can lower the materials cost and can be compatible with deterministic assembly procedures to allow programmable, large-scale distribution, unlimited choices of module substrates, as well as lightweight, mechanically compliant constructions. Systematic studies on optical and electrical properties, photovoltaic performance in experiments, as well as numerical modeling elucidate important design rules for nanoscale photon management with ultrathin, nanostructured silicon solar cells and their interconnected, mechanically flexible modules, where we demonstrate 12.4% solar-to-electric energy conversion efficiency for printed ultrathin (∼ 8 μm) nanostructured silicon solar cells when configured with near-optimal designs of rear-surface nanoposts, antireflection coating, and back-surface reflector.

Low cost solar array project production process and equipment task. A Module Experimental Process System Development Unit (MEPSDU)

NASA Technical Reports Server (NTRS)

1981-01-01

Technical readiness for the production of photovoltaic modules using single crystal silicon dendritic web sheet material is demonstrated by: (1) selection, design and implementation of solar cell and photovoltaic module process sequence in a Module Experimental Process System Development Unit; (2) demonstration runs; (3) passing of acceptance and qualification tests; and (4) achievement of a cost effective module.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Madrak, R.; Wildman, D.

The key elements have been constructed for a fast chopper system capable of removing single 2.5 MeV proton bunches spaced at 325 MHz. The average chopping rate is ~ 1 MHz. The components include a pulse delaying microstrip structure for deflecting the beam, high voltage (1.2 kV) fast (ns rise time) pulsers, and an associated wideband combiner. Various designs for the deflecting structures have been studied. Measurements of the microstrip structures' coverage factors and pulse shapes are presented.

Characterization of bone tissue using microstrip antennas.

PubMed

Barros, Jannayna D; de Oliveira, Jose Josemar; da Silva, Sandro G

2010-01-01

The use of electromagnetic waves in the characterization of biological tissues has been conducted since the nineteenth century after the confirmation that electric and magnetic fields can interact with biological materials. In this paper, electromagnetic waves are used to characterize tissues with different levels of bone mass. In this way, one antenna array on microstrip lines was used. It can be seen that bones with different mass has different behavior in microwave frequencies.

Dual-band reactively loaded microstrip antenna

NASA Technical Reports Server (NTRS)

Richards, W. F.; Long, S. A.; Davidson, S. E.

1985-01-01

A previously derived theory is applied to a microstrip antenna with a reactive load to produce a dual-band radiator. A model consisting of a rectangular patch radiator loaded with a variable length short-circuited coaxial stub was investigated experimentally. Comparisons of theoretical predictions and experimental data are made for the impedance and resonant frequencies as a function of the position of the load, the length of the stub, and the characteristic impedance of the stub.

Comparison of Rising Resonator Relative Permittivity Measurements to Ground Penetrating Radar Data

DTIC Science & Technology

2014-04-01

permittivity of the soil and the target is critical in determining the strength of the reflection from the target. In this paper, a microstrip ring resonator...is used to measure the relative permittivity of the soil and various target fill materials. For this measurement technique, a microstrip ring... antennas of varying frequencies to take measurements of the two port transmission coefficient. This coefficient is measured from the input feedline to

Comparison of Ring Resonator Relative Permittivity Measurements to Ground Penetrating Radar Data

DTIC Science & Technology

2014-04-01

permittivity of the soil and the target is critical in determining the strength of the reflection from the target. In this paper, a microstrip ring resonator...is used to measure the relative permittivity of the soil and various target fill materials. For this measurement technique, a microstrip ring... antennas of varying frequencies to take measurements of the two port transmission coefficient. This coefficient is measured from the input feedline to

A broadband and low cross polarization antenna with a balun of microstrip line coupling to slot line

PubMed Central

Sun, Kai; Liu, Sihao; Yang, Tianming

2018-01-01

In this paper, a wide-band low cross polarization antenna with a structure of microstrip line coupling to slot line as the balun is proposed. The radiation part of the antenna is fed by two pairs of parallel transmission line via a transition from a slot line which is coupled by a microstrip line. Because it is fed by parallel transmission lines, which is balanced-fed structure, the antenna can achieve an improved low cross-polarization performance. The height of the antenna is 0.146λ0 (λ0 is the wavelength of lowest frequency). The prototype antenna demonstrates a measured impedance bandwidth of 93.5% (2.7–7.44 GHz), a 3-dB-gain bandwidth of 77% (2.7–6.1 GHz), and a maximum gain of 10.5 dBi at 4.5 GHz. PMID:29543902

A broadband and low cross polarization antenna with a balun of microstrip line coupling to slot line.

PubMed

Sun, Kai; Yang, Deqiang; Liu, Sihao; Yang, Tianming

2018-01-01

In this paper, a wide-band low cross polarization antenna with a structure of microstrip line coupling to slot line as the balun is proposed. The radiation part of the antenna is fed by two pairs of parallel transmission line via a transition from a slot line which is coupled by a microstrip line. Because it is fed by parallel transmission lines, which is balanced-fed structure, the antenna can achieve an improved low cross-polarization performance. The height of the antenna is 0.146λ0 (λ0 is the wavelength of lowest frequency). The prototype antenna demonstrates a measured impedance bandwidth of 93.5% (2.7-7.44 GHz), a 3-dB-gain bandwidth of 77% (2.7-6.1 GHz), and a maximum gain of 10.5 dBi at 4.5 GHz.

Mode propagation in optical nanowaveguides with dielectric cores and surrounding metal layers.

PubMed

Lapchuk, Anatoly S; Shin, Dongho; Jeong, Ho-Seop; Kyong, Chun Su; Shin, Dong-Ik

2005-12-10

The mode spectrum in an optical nanowaveguide consisting of a dielectric-core layer surrounded by two identical metal layers is investigated. A simple model based on mode matching to predict the properties of mode propagation in such optical nanowaveguides is proposed. It is shown that quasi-TM00 and quasi-TM10 modes supported by an optical microstrip line do not have a cutoff frequency, regardless of the size of the metal strips, the thickness of the dielectric slab, and the cross-sectional shape. The transverse size of the TM00 mode supported by a nanosized microstrip line was found to be approximately equal to the transverse dimension of the microstrip line. In closed rectangular and elliptical nanowaveguides, i.e., in which all dielectric surfaces are covered with metal films, the cross-sectional shape of the waveguide should be stretched along one side to produce propagation conditions for the fundamental mode.

Planar microstrip YAGI antenna array

NASA Technical Reports Server (NTRS)

Huang, John (Inventor)

1993-01-01

A directional microstrip antenna includes a driven patch surrounded by an isolated reflector and one or more coplanar directors, all separated from a ground plane on the order of 0.1 wavelength or less to provide end fire beam directivity without requiring power dividers or phase shifters. The antenna may be driven at a feed point a distance from the center of the driven patch in accordance with conventional microstrip antenna design practices for H-plane coupled or horizontally polarized signals. The feed point for E-plane coupled or vertically polarized signals is at a greater distance from the center than the first distance. This feed point is also used for one of the feed signals for circularly polarized signals. The phase shift between signals applied to feed points for circularly polarized signals must be greater than the conventionally required 90 degrees and depends upon the antenna configuration.

Microstrip patch antenna receiving array operating in the Ku band

NASA Technical Reports Server (NTRS)

Walcher, Douglas A.

1996-01-01

Microstrip patch antennas were first investigated from the idea that it would be highly advantageous to fabricate radiating elements (antennas) on the same dielectric substrate as RF circuitry and transmission lines. Other advantages were soon discovered to be its lightweight, low profile, conformability to shaped surfaces, and low manufacturing costs. Unfortunately, these same patches continually exhibit narrow bandwidths, wide beamwidths, and low antenna gain. This thesis will present the design and experimental results of a microstrip patch antenna receiving array operating in the Ku band. An antenna array will be designed in an attempt to improve its performance over a single patch. Most Ku band information signals are either wide band television images or narrow band data and voice channels. An attempt to improve the gain of the array by introducing parasitic patches on top of the array will also be presented in this thesis.

Dual-Band Operation of a Microstrip Patch Antenna on a Duroid 5870 Substrate for Ku- and K-Bands

PubMed Central

Islam, M. M.; Islam, M. T.; Faruque, M. R. I.

2013-01-01

The dual-band operation of a microstrip patch antenna on a Duroid 5870 substrate for Ku- and K-bands is presented. The fabrication of the proposed antenna is performed with slots and a Duroid 5870 dielectric substrate and is excited by a 50 Ω microstrip transmission line. A high-frequency structural simulator (HFSS) is used which is based on the finite element method (FEM) in this research. The measured impedance bandwidth (2 : 1 VSWR) achieved is 1.07 GHz (15.93 GHz–14.86 GHz) on the lower band and 0.94 GHz (20.67–19.73 GHz) on the upper band. A stable omnidirectional radiation pattern is observed in the operating frequency band. The proposed prototype antenna behavior is discussed in terms of the comparisons of the measured and simulated results. PMID:24385878

Dual-band operation of a microstrip patch antenna on a Duroid 5870 substrate for Ku- and K-bands.

PubMed

Islam, M M; Islam, M T; Faruque, M R I

2013-01-01

The dual-band operation of a microstrip patch antenna on a Duroid 5870 substrate for Ku- and K-bands is presented. The fabrication of the proposed antenna is performed with slots and a Duroid 5870 dielectric substrate and is excited by a 50 Ω microstrip transmission line. A high-frequency structural simulator (HFSS) is used which is based on the finite element method (FEM) in this research. The measured impedance bandwidth (2 : 1 VSWR) achieved is 1.07 GHz (15.93 GHz-14.86 GHz) on the lower band and 0.94 GHz (20.67-19.73 GHz) on the upper band. A stable omnidirectional radiation pattern is observed in the operating frequency band. The proposed prototype antenna behavior is discussed in terms of the comparisons of the measured and simulated results.

Coupling Between Microstrip Lines With Finite Width Ground Plane Embedded in Thin Film Circuits

NASA Technical Reports Server (NTRS)

Ponchak, George E.; Dalton, Edan; Tentzeris, Manos M.; Papapolymerou, John

2003-01-01

Three-dimensional (3D) interconnects built upon multiple layers of polyimide are required for constructing 3D circuits on CMOS (low resistivity) Si wafers, GaAs, and ceramic substrates. Thin film microstrip lines (TFMS) with finite width ground planes embedded in the polyimide are often used. However, the closely spaced TFMS lines a r e susceptible to high levels of coupling, which degrades circuit performance. In this paper, Finite Difference Time Domain (FDTD) analysis and experimental measurements a r e used to show that the ground planes must be connected by via holes to reduce coupling in both the forward and backward directions. Furthermore, it is shown that coupled microstrip lines establish a slotline type mode between the two ground planes and a dielectric waveguide type mode, and that the via holes recommended here eliminate these two modes.

Dual frequency, dual polarized, multi-layered microstrip slot and dipole array antenna

NASA Technical Reports Server (NTRS)

Tulintseff, Ann N. (Inventor)

1995-01-01

An antenna array system is disclosed which uses subarrays of slots and subarrays of dipoles on separate planes. The slots and dipoles respectively are interleaved, which is to say there is minimal overlap between them. Each subarray includes a microstrip transmission line and a plurality of elements extending perpendicular thereto. The dipoles form the transmission elements and the slots form the receive elements. The plane in which the slots are formed also forms a ground plane for the dipoles--hence the feed to the dipole is on the opposite side of this ground plane as the feed to the slots. HPAs are located adjacent the dipoles on one side of the substrate and LNAs are located adjacent the slots on the other side of the substrate. The dipoles and slots are tuned by setting different offsets between each element and the microstrip transmission line.

Using graphene/styrene-isoprene-styrene copolymer composite thin film as a flexible microstrip antenna for the detection of heptane vapors

NASA Astrophysics Data System (ADS)

Olejnik, Robert; Matyas, Jiri; Slobodian, Petr; Riha, Pavel

2018-03-01

Most portable devices, such as mobile phones or tablets, use antennas made of copper. This paper demonstrates the possible use of antenna constructed from electrically conductive polymer composite materials for use in those applications. The method of preparation and the properties of the graphene/styrene-isoprene-styrene copolymer as flexible microstrip antenna are described in this contribution. Graphene/styrene-isoprene-styrene copolymer toluene solution was prepared by means of ultrasound and the PET substrate was dip coated to reach a fine thin film. The main advantages of using PET as a substrate are low weight and flexibility. The final size of the flexible microstrip antenna was 10 × 25 mm with thickness of 0.48 mm (PET substrate 0.25 mm) with a weight of 0.110 g. The resulting antenna operates at a frequency of 1.8 GHz and gain ‑40.02 dB.

Flexible microstrip antenna based on carbon nanotubes/(ethylene-octene copolymer) thin composite layer deposited on PET substrate

NASA Astrophysics Data System (ADS)

Matyas, J.; Olejnik, R.; Slobodian, P.

2017-12-01

A most of portable devices, such as mobile phones, tablets, uses antennas made of cupper. In this paper we demonstrate possible use of electrically conductive polymer composite material for such antenna application. Here we describe the method of preparation and properties of the carbon nanotubes (CNTs)/(ethylene-octene copolymer) as flexible microstrip antenna. Carbon nanotubes dispersion in (ethylene-octene copolymer) toluene solution was prepared by ultrasound finally coating PET substrate by method of dip-coating. Main advantages of PET substrate are low weight and also flexibility. The final size of flexible microstrip antenna was 5 x 50 mm with thickness of 0.48 mm (PET substrate 0.25 mm) with the weight of only 0.402 g. Antenna operates at three frequencies 1.66 GHz (-6.51 dB), 2.3 GHz (-13 dB) and 2.98 GHz (-33.59 dB).

DOE Forms National Center for Photovoltaics

Science.gov Websites

, Georgia, Florida and New Mexico. The alliance also will include the Utility Photovoltaic Group, a testing in partnership with the U.S. photovoltaic industry. For industry that means one-stop shopping for amorphous silicon and cadmium telluride photovoltaic modules, and manufacturing of silicon sheet and

Electrical detection of electron-spin-echo envelope modulations in thin-film silicon solar cells

NASA Astrophysics Data System (ADS)

Fehr, M.; Behrends, J.; Haas, S.; Rech, B.; Lips, K.; Schnegg, A.

2011-11-01

Electrically detected electron-spin-echo envelope modulations (ED-ESEEM) were employed to detect hyperfine interactions between nuclear spins and paramagnetic sites, determining spin-dependent transport processes in multilayer thin-film microcrystalline silicon solar cells. Electrical detection in combination with a modified Hahn-echo sequence was used to measure echo modulations induced by 29Si, 31P, and 1H nuclei weakly coupled to electron spins of paramagnetic sites in the amorphous and microcrystalline solar cell layers. In the case of CE centers in the μc-Si:H i-layer, the absence of 1H ESEEM modulations indicates that the adjacencies of CE centers are depleted from hydrogen atoms. On the basis of this result, we discuss several models for the microscopic origin of the CE center and conclusively assign those centers to coherent twin boundaries inside of crystalline grains in μc-Si:H.

Electro-optical modulator in a polymerinfiltrated silicon slotted photonic crystal waveguide heterostructure resonator.

PubMed

Wülbern, Jan Hendrik; Petrov, Alexander; Eich, Manfred

2009-01-05

We present a novel concept of a compact, ultra fast electro-optic modulator, based on photonic crystal resonator structures that can be realized in two dimensional photonic crystal slabs of silicon as core material employing a nonlinear optical polymer as infiltration and cladding material. The novel concept is to combine a photonic crystal heterostructure cavity with a slotted defect waveguide. The photonic crystal lattice can be used as a distributed electrode for the application of a modulation signal. An electrical contact is hence provided while the optical wave is kept isolated from the lossy metal electrodes. Thereby, well known disadvantages of segmented electrode designs such as excessive scattering are avoided. The optical field enhancement in the slotted region increases the nonlinear interaction with an external electric field resulting in an envisaged switching voltage of approximately 1 V at modulation speeds up to 100 GHz.

Active graphene-silicon hybrid diode for terahertz waves.

PubMed

Li, Quan; Tian, Zhen; Zhang, Xueqian; Singh, Ranjan; Du, Liangliang; Gu, Jianqiang; Han, Jiaguang; Zhang, Weili

2015-05-11

Controlling the propagation properties of the terahertz waves in graphene holds great promise in enabling novel technologies for the convergence of electronics and photonics. A diode is a fundamental electronic device that allows the passage of current in just one direction based on the polarity of the applied voltage. With simultaneous optical and electrical excitations, we experimentally demonstrate an active diode for the terahertz waves consisting of a graphene-silicon hybrid film. The diode transmits terahertz waves when biased with a positive voltage while attenuates the wave under a low negative voltage, which can be seen as an analogue of an electronic semiconductor diode. Here, we obtain a large transmission modulation of 83% in the graphene-silicon hybrid film, which exhibits tremendous potential for applications in designing broadband terahertz modulators and switchable terahertz plasmonic and metamaterial devices.

Simulation analysis of a novel high efficiency silicon solar cell

NASA Technical Reports Server (NTRS)

Mokashi, Anant R.; Daud, T.; Kachare, A. H.

1985-01-01

It is recognized that crystalline silicon photovoltaic module efficiency of 15 percent or more is required for cost-effective photovoltaic energy utilization. This level of module efficiency requires large-area encapsulated production cell efficiencies in the range of 18 to 20 percent. Though the theoretical maximum of silicon solar cell efficiency for an idealized case is estimated to be around 30 percent, practical performance of cells to-date are considerably below this limit. This is understood to be largely a consequence of minority carrier losses in the bulk as well as at all surfaces including those under the metal contacts. In this paper a novel device design with special features to reduce bulk and surface recombination losses is evaluated using numerical analysis technique. Details of the numerical model, cell design, and analysis results are presented.

Active graphene–silicon hybrid diode for terahertz waves

PubMed Central

Li, Quan; Tian, Zhen; Zhang, Xueqian; Singh, Ranjan; Du, Liangliang; Gu, Jianqiang; Han, Jiaguang; Zhang, Weili

2015-01-01

Controlling the propagation properties of the terahertz waves in graphene holds great promise in enabling novel technologies for the convergence of electronics and photonics. A diode is a fundamental electronic device that allows the passage of current in just one direction based on the polarity of the applied voltage. With simultaneous optical and electrical excitations, we experimentally demonstrate an active diode for the terahertz waves consisting of a graphene–silicon hybrid film. The diode transmits terahertz waves when biased with a positive voltage while attenuates the wave under a low negative voltage, which can be seen as an analogue of an electronic semiconductor diode. Here, we obtain a large transmission modulation of 83% in the graphene–silicon hybrid film, which exhibits tremendous potential for applications in designing broadband terahertz modulators and switchable terahertz plasmonic and metamaterial devices. PMID:25959596

Alternative glues for the production of ATLAS silicon strip modules for the Phase-II upgrade of the ATLAS Inner Detector

NASA Astrophysics Data System (ADS)

Poley, L.; Bloch, I.; Edwards, S.; Friedrich, C.; Gregor, I.-M.; Jones, T.; Lacker, H.; Pyatt, S.; Rehnisch, L.; Sperlich, D.; Wilson, J.

2016-05-01

The Phase-II upgrade of the ATLAS detector for the High Luminosity Large Hadron Collider (HL-LHC) includes the replacement of the current Inner Detector with an all-silicon tracker consisting of pixel and strip detectors. The current Phase-II detector layout requires the construction of 20,000 strip detector modules consisting of sensor, circuit boards and readout chips, which are connected mechanically using adhesives. The adhesive used initially between readout chips and circuit board is a silver epoxy glue as was used in the current ATLAS SemiConductor Tracker (SCT). However, this glue has several disadvantages, which motivated the search for an alternative. This paper presents a study of six ultra-violet (UV) cure glues and a glue pad for possible use in the assembly of silicon strip detector modules for the ATLAS upgrade. Trials were carried out to determine the ease of use, thermal conduction and shear strength. Samples were thermally cycled, radiation hardness and corrosion resistance were also determined. These investigations led to the exclusion of three UV cure glues as well as the glue pad. Three UV cure glues were found to be possible better alternatives than silver loaded glue. Results from electrical tests of first prototype modules constructed using these glues are presented.