Rapid Solid-State Metathesis Routes to Nanostructured Silicon-Germainum
NASA Technical Reports Server (NTRS)
Rodriguez, Marc (Inventor); Kaner, Richard B. (Inventor); Bux, Sabah K. (Inventor); Fleurial, Jean-Pierre (Inventor)
2014-01-01
Methods for producing nanostructured silicon and silicon-germanium via solid state metathesis (SSM). The method of forming nanostructured silicon comprises the steps of combining a stoichiometric mixture of silicon tetraiodide (SiI4) and an alkaline earth metal silicide into a homogeneous powder, and initating the reaction between the silicon tetraiodide (SiI4) with the alkaline earth metal silicide. The method of forming nanostructured silicon-germanium comprises the steps of combining a stoichiometric mixture of silicon tetraiodide (SiI4) and a germanium based precursor into a homogeneous powder, and initiating the reaction between the silicon tetraiodide (SiI4) with the germanium based precursors.
Silicon nanostructures for cancer diagnosis and therapy.
Peng, Fei; Cao, Zhaohui; Ji, Xiaoyuan; Chu, Binbin; Su, Yuanyuan; He, Yao
2015-01-01
The emergence of nanotechnology suggests new and exciting opportunities for early diagnosis and therapy of cancer. During the recent years, silicon-based nanomaterials featuring unique properties have received great attention, showing high promise for myriad biological and biomedical applications. In this review, we will particularly summarize latest representative achievements on the development of silicon nanostructures as a powerful platform for cancer early diagnosis and therapy. First, we introduce the silicon nanomaterial-based biosensors for detecting cancer markers (e.g., proteins, tumor-suppressor genes and telomerase activity, among others) with high sensitivity and selectivity under molecular level. Then, we summarize in vitro and in vivo applications of silicon nanostructures as efficient nanoagents for cancer therapy. Finally, we discuss the future perspective of silicon nanostructures for cancer diagnosis and therapy.
Template-free fabrication of silicon micropillar/nanowire composite structure by one-step etching
2012-01-01
A template-free fabrication method for silicon nanostructures, such as silicon micropillar (MP)/nanowire (NW) composite structure is presented. Utilizing an improved metal-assisted electroless etching (MAEE) of silicon in KMnO4/AgNO3/HF solution and silicon composite nanostructure of the long MPs erected in the short NWs arrays were generated on the silicon substrate. The morphology evolution of the MP/NW composite nanostructure and the role of self-growing K2SiF6 particles as the templates during the MAEE process were investigated in detail. Meanwhile, a fabrication mechanism based on the etching of silver nanoparticles (catalyzed) and the masking of K2SiF6 particles is proposed, which gives guidance for fabricating different silicon nanostructures, such as NW and MP arrays. This one-step method provides a simple and cost-effective way to fabricate silicon nanostructures. PMID:23043719
Superhydrophobic SERS substrates based on silicon hierarchical nanostructures
NASA Astrophysics Data System (ADS)
Chen, Xuexian; Wen, Jinxiu; Zhou, Jianhua; Zheng, Zebo; An, Di; Wang, Hao; Xie, Weiguang; Zhan, Runze; Xu, Ningsheng; Chen, Jun; She, Juncong; Chen, Huanjun; Deng, Shaozhi
2018-02-01
Silicon nanostructures have been cultivated as promising surface enhanced Raman scattering (SERS) substrates in terms of their low-loss optical resonance modes, facile functionalization, and compatibility with today’s state-of-the-art CMOS techniques. However, unlike their plasmonic counterparts, the electromagnetic field enhancements induced by silicon nanostructures are relatively small, which restrict their SERS sensing limit to around 10-7 M. To tackle this problem, we propose here a strategy for improving the SERS performance of silicon nanostructures by constructing silicon hierarchical nanostructures with a superhydrophobic surface. The hierarchical nanostructures are binary structures consisted of silicon nanowires (NWs) grown on micropyramids (MPs). After being modified with perfluorooctyltriethoxysilane (PFOT), the nanostructure surface shows a stable superhydrophobicity with a high contact angle of ˜160°. The substrate can allow for concentrating diluted analyte solutions into a specific area during the evaporation of the liquid droplet, whereby the analytes are aggregated into a small volume and can be easily detected by the silicon nanostructure SERS substrate. The analyte molecules (methylene blue: MB) enriched from an aqueous solution lower than 10-8 M can be readily detected. Such a detection limit is ˜100-fold lower than the conventional SERS substrates made of silicon nanostructures. Additionally, the detection limit can be further improved by functionalizing gold nanoparticles onto silicon hierarchical nanostructures, whereby the superhydrophobic characteristics and plasmonic field enhancements can be combined synergistically to give a detection limit down to ˜10-11 M. A gold nanoparticle-functionalized superhydrophobic substrate was employed to detect the spiked melamine in liquid milk. The results showed that the detection limit can be as low as 10-5 M, highlighting the potential of the proposed superhydrophobic SERS substrate in practical food safety inspection applications.
Nanostructured Silicon Used for Flexible and Mobile Electricity Generation.
Sun, Baoquan; Shao, Mingwang; Lee, Shuitong
2016-12-01
The use of nanostructured silicon for the generation of electricity in flexible and mobile devices is reviewed. This field has attracted widespread interest in recent years due to the emergence of plastic electronics. Such developments are likely to alter the nature of power sources in the near future. For example, flexible photovoltaic cells can supply electricity to rugged and collapsible electronics, biomedical devices, and conformable solar panels that are integrated with the curved surfaces of vehicles or buildings. Here, the unique optical and electrical properties of nanostructured silicon are examined, with regard to how they can be exploited in flexible photovoltaics, thermoelectric generators, and piezoelectric devices, which serve as power generators. Particular emphasis is placed on organic-silicon heterojunction photovoltaic devices, silicon-nanowire-based thermoelectric generators, and core-shell silicon/silicon oxide nanowire-based piezoelectric devices, because they are flexible, lightweight, and portable. © 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
A new nanostructured Silicon biosensor for diagnostics of bovine leucosis
NASA Astrophysics Data System (ADS)
Luchenko, A. I.; Melnichenko, M. M.; Starodub, N. F.; Shmyryeva, O. M.
2010-08-01
In this report we propose a new instrumental method for the biochemical diagnostics of the bovine leucosis through the registration of the formation of the specific immune complex (antigen-antibody) with the help of biosensor based on the nano-structured silicon. The principle of the measurements is based on the determination of the photosensitivity of the surface. In spite of the existed traditional methods of the biochemical diagnostics of the bovine leucosis the proposed approach may provide the express control of the milk quality as direct on the farm and during the process raw materials. The proposed variant of the biosensor based on the nano-structured silicon may be applied for the determination of the concentration of different substances which may form the specific complex in the result of the bioaffine reactions. A new immune technique based on the nanostructured silicon and intended for the quantitative determination of some toxic substances is offered. The sensitivity of such biosensor allows determining T-2 mycotoxin at the concentration of 10 ng/ml during several minutes.
NASA Astrophysics Data System (ADS)
Singh, Vivek; Yu, Yixuan; Sun, Qi-C.; Korgel, Brian; Nagpal, Prashant
2014-11-01
While silicon nanostructures are extensively used in electronics, the indirect bandgap of silicon poses challenges for optoelectronic applications like photovoltaics and light emitting diodes (LEDs). Here, we show that size-dependent pseudo-direct bandgap transitions in silicon nanocrystals dominate the interactions between (photoexcited) charge carriers and phonons, and hence the optoelectronic properties of silicon nanocrystals. Direct measurements of the electronic density of states (DOS) for different sized silicon nanocrystals reveal that these pseudo-direct transitions, likely arising from the nanocrystal surface, can couple with the quantum-confined silicon states. Moreover, we demonstrate that since these transitions determine the interactions of charge carriers with phonons, they change the light emission, absorption, charge carrier diffusion and phonon drag (Seebeck coefficient) in nanoscaled silicon semiconductors. Therefore, these results can have important implications for the design of optoelectronics and thermoelectric devices based on nanostructured silicon.While silicon nanostructures are extensively used in electronics, the indirect bandgap of silicon poses challenges for optoelectronic applications like photovoltaics and light emitting diodes (LEDs). Here, we show that size-dependent pseudo-direct bandgap transitions in silicon nanocrystals dominate the interactions between (photoexcited) charge carriers and phonons, and hence the optoelectronic properties of silicon nanocrystals. Direct measurements of the electronic density of states (DOS) for different sized silicon nanocrystals reveal that these pseudo-direct transitions, likely arising from the nanocrystal surface, can couple with the quantum-confined silicon states. Moreover, we demonstrate that since these transitions determine the interactions of charge carriers with phonons, they change the light emission, absorption, charge carrier diffusion and phonon drag (Seebeck coefficient) in nanoscaled silicon semiconductors. Therefore, these results can have important implications for the design of optoelectronics and thermoelectric devices based on nanostructured silicon. Electronic supplementary information (ESI) available. See DOI: 10.1039/c4nr04688a
Lee, Sung-Min; Biswas, Roshni; Li, Weigu; Kang, Dongseok; Chan, Lesley; Yoon, Jongseung
2014-10-28
Nanostructured forms of crystalline silicon represent an attractive materials building block for photovoltaics due to their potential benefits to significantly reduce the consumption of active materials, relax the requirement of materials purity for high performance, and hence achieve greatly improved levelized cost of energy. Despite successful demonstrations for their concepts over the past decade, however, the practical application of nanostructured silicon solar cells for large-scale implementation has been hampered by many existing challenges associated with the consumption of the entire wafer or expensive source materials, difficulties to precisely control materials properties and doping characteristics, or restrictions on substrate materials and scalability. Here we present a highly integrable materials platform of nanostructured silicon solar cells that can overcome these limitations. Ultrathin silicon solar microcells integrated with engineered photonic nanostructures are fabricated directly from wafer-based source materials in configurations that can lower the materials cost and can be compatible with deterministic assembly procedures to allow programmable, large-scale distribution, unlimited choices of module substrates, as well as lightweight, mechanically compliant constructions. Systematic studies on optical and electrical properties, photovoltaic performance in experiments, as well as numerical modeling elucidate important design rules for nanoscale photon management with ultrathin, nanostructured silicon solar cells and their interconnected, mechanically flexible modules, where we demonstrate 12.4% solar-to-electric energy conversion efficiency for printed ultrathin (∼ 8 μm) nanostructured silicon solar cells when configured with near-optimal designs of rear-surface nanoposts, antireflection coating, and back-surface reflector.
The chief goal is to develop new selective solid state sensors for carcinogenic and toxic chromium(VI) and arsenic(V) in water based on redox quenching of the luminescence from nanostructured porous silicon and polysiloles.
Black silicon solar cell: analysis optimization and evolution towards a thinner and flexible future.
Roy, Arijit Bardhan; Dhar, Arup; Choudhuri, Mrinmoyee; Das, Sonali; Hossain, S Minhaz; Kundu, Avra
2016-07-29
Analysis and optimization of silicon nano-structured geometry (black silicon) for photovoltaic applications has been reported. It is seen that a unique class of geometry: micro-nanostructure has the potential to find a balance between the conflicting interests of reduced reflection for wide angles of incidence, reduced surface area enhancement due to the nano-structuring of the substrate and reduced material wastage due to the etching of the silicon substrate to realize the geometry itself. It is established that even optimally designed micro-nanostructures would not be useful for conventional wafer based approaches. The work presents computational studies on how such micro-nanostructures are more potent for future ultra-thin monocrystalline silicon absorbers. For such ultra-thin absorbers, the optimally designed micro-nanostructures provide additional advantages of advanced light management capabilities as it behaves as a lossy 2D photonic crystal making the physically thin absorber optically thick along with the ability to collect photo-generated carriers orthogonal to the direction of light (radial junction) for unified photon-electron harvesting. Most significantly, the work answers the key question on how thin the monocrystalline solar absorber should be so that optimum micro-nanostructure would be able to harness the incident photons ensuring proper collection so as to reach the well-known Shockley-Queisser limit of solar cells. Flexible ultra-thin monocrystalline silicon solar cells have been fabricated using nanosphere lithography and MacEtch technique along with a synergistic association of crystalline and amorphous silicon technologies to demonstrate its physical and technological flexibilities. The outcomes are relevant so that nanotechnology may be seamlessly integrated into the technology roadmap of monocrystalline silicon solar cells as the silicon thickness should be significantly reduced without compromising the efficiency within the next decade.
Taste and mouthfeel assessment of porous and non-porous silicon microparticles
NASA Astrophysics Data System (ADS)
Shabir, Qurrat; Skaria, Cyrus; Brien, Heather O.; Loni, Armando; Barnett, Christian; Canham, Leigh
2012-07-01
Unlike the trace minerals iron, copper and zinc, the semiconductor silicon has not had its organoleptic properties assessed. Nanostructured silicon provides the nutrient orthosilicic acid through hydrolysis in the gastrointestinal tract and is a candidate for oral silicon supplements. Mesoporous silicon, a nanostructured material, is being assessed for both oral drug and nutrient delivery. Here we use taste panels to determine the taste threshold and taste descriptors of both solid and mesoporous silicon in water and chewing gum base. Comparisons are made with a metal salt (copper sulphate) and porous silica. We believe such data will provide useful benchmarks for likely consumer acceptability of silicon supplemented foodstuffs and beverages.
Silicon-embedded copper nanostructure network for high energy storage
Yu, Tianyue
2018-01-23
Provided herein are nanostructure networks having high energy storage, electrochemically active electrode materials including nanostructure networks having high energy storage, as well as electrodes and batteries including the nanostructure networks having high energy storage. According to various implementations, the nanostructure networks have high energy density as well as long cycle life. In some implementations, the nanostructure networks include a conductive network embedded with electrochemically active material. In some implementations, silicon is used as the electrochemically active material. The conductive network may be a metal network such as a copper nanostructure network. Methods of manufacturing the nanostructure networks and electrodes are provided. In some implementations, metal nanostructures can be synthesized in a solution that contains silicon powder to make a composite network structure that contains both. The metal nanostructure growth can nucleate in solution and on silicon nanostructure surfaces.
Silicon-embedded copper nanostructure network for high energy storage
Yu, Tianyue
2016-03-15
Provided herein are nanostructure networks having high energy storage, electrochemically active electrode materials including nanostructure networks having high energy storage, as well as electrodes and batteries including the nanostructure networks having high energy storage. According to various implementations, the nanostructure networks have high energy density as well as long cycle life. In some implementations, the nanostructure networks include a conductive network embedded with electrochemically active material. In some implementations, silicon is used as the electrochemically active material. The conductive network may be a metal network such as a copper nanostructure network. Methods of manufacturing the nanostructure networks and electrodes are provided. In some implementations, metal nanostructures can be synthesized in a solution that contains silicon powder to make a composite network structure that contains both. The metal nanostructure growth can nucleate in solution and on silicon nanostructure surfaces.
Zhang, Jie; Zhang, Yinan; Song, Tao; Shen, Xinlei; Yu, Xuegong; Lee, Shuit-Tong; Sun, Baoquan; Jia, Baohua
2017-07-05
Organic-inorganic hybrid solar cells based on n-type crystalline silicon and poly(3,4-ethylenedioxythiophene)-poly(styrenesulfonate) exhibited promising efficiency along with a low-cost fabrication process. In this work, ultrathin flexible silicon substrates, with a thickness as low as tens of micrometers, were employed to fabricate hybrid solar cells to reduce the use of silicon materials. To improve the light-trapping ability, nanostructures were built on the thin silicon substrates by a metal-assisted chemical etching method (MACE). However, nanostructured silicon resulted in a large amount of surface-defect states, causing detrimental charge recombination. Here, the surface was smoothed by solution-processed chemical treatment to reduce the surface/volume ratio of nanostructured silicon. Surface-charge recombination was dramatically suppressed after surface modification with a chemical, associated with improved minority charge-carrier lifetime. As a result, a power conversion efficiency of 9.1% was achieved in the flexible hybrid silicon solar cells, with a substrate thickness as low as ∼14 μm, indicating that interface engineering was essential to improve the hybrid junction quality and photovoltaic characteristics of the hybrid devices.
Optical nano artifact metrics using silicon random nanostructures
NASA Astrophysics Data System (ADS)
Matsumoto, Tsutomu; Yoshida, Naoki; Nishio, Shumpei; Hoga, Morihisa; Ohyagi, Yasuyuki; Tate, Naoya; Naruse, Makoto
2016-08-01
Nano-artifact metrics exploit unique physical attributes of nanostructured matter for authentication and clone resistance, which is vitally important in the age of Internet-of-Things where securing identities is critical. However, expensive and huge experimental apparatuses, such as scanning electron microscopy, have been required in the former studies. Herein, we demonstrate an optical approach to characterise the nanoscale-precision signatures of silicon random structures towards realising low-cost and high-value information security technology. Unique and versatile silicon nanostructures are generated via resist collapse phenomena, which contains dimensions that are well below the diffraction limit of light. We exploit the nanoscale precision ability of confocal laser microscopy in the height dimension; our experimental results demonstrate that the vertical precision of measurement is essential in satisfying the performances required for artifact metrics. Furthermore, by using state-of-the-art nanostructuring technology, we experimentally fabricate clones from the genuine devices. We demonstrate that the statistical properties of the genuine and clone devices are successfully exploited, showing that the liveness-detection-type approach, which is widely deployed in biometrics, is valid in artificially-constructed solid-state nanostructures. These findings pave the way for reasonable and yet sufficiently secure novel principles for information security based on silicon random nanostructures and optical technologies.
Premnath, P.; Tan, B.; Venkatakrishnan, K.
2015-01-01
Currently, the use of nano silicon in cancer therapy is limited as drug delivery vehicles and markers in imaging, not as manipulative/controlling agents. This is due to limited properties that native states of nano silicon and silicon oxides offers. We introduce nano-functionalized multi-phased silicon/silicon oxide biomaterials synthesized via ultrashort pulsed laser synthesis, with tunable properties that possess inherent cancer controlling properties that can passivate the progression of cancer. This nanostructured biomaterial is composed of individual functionalized nanoparticles made of a homogenous hybrid of multiple phases of silicon and silicon oxide in increasing concentration outwards from the core. The chemical properties of the proposed nanostructure such as number of phases, composition of phases and crystal orientation of each functionalized nanoparticle in the three dimensional nanostructure is defined based on precisely tuned ultrashort pulsed laser-material interaction mechanisms. The amorphous rich phased biomaterial shows a 30 fold (95%) reduction in number of cancer cells compared to bulk silicon in 48 hours. Further, the size of the cancer cells reduces by 76% from 24 to 48 hours. This method exposes untapped properties of combination of multiple phases of silicon oxides and its applications in cancer therapy. PMID:26190009
NASA Astrophysics Data System (ADS)
Jiang, Ye; Shen, Honglie; Yang, Wangyang; Zheng, Chaofan; Tang, Quntao; Yao, Hanyu; Raza, Adil; Li, Yufang; Huang, Chunlai
2018-02-01
In this paper, we report passivation properties of inverted pyramidal nanostructure based multi-crystalline silicon (mc-Si) by Al2O3 films with spin-coating method. Precursors AlCl3 and Al(acac)3 for Al2O3 films were chosen for comparison. Al2O3/SiO x stacks were found to be able to passivate the nanostructured surface well. With the number of spin-coating up to five, the Al2O3 films could conformally attach the nanostructure. The weighted average reflectance values (ranging from 400-900 nm) of the passivated silicon surface could be reduced to 10.74% (AlCl3) and 11.12% (Al(acac)3), and the effective carrier lifetime could reach 7.84 and 16.98 μs, respectively. This work presented a potential process to fabricate low cost high efficiency mc-Si solar cells.
Singh, Vivek; Yu, Yixuan; Sun, Qi-C; Korgel, Brian; Nagpal, Prashant
2014-12-21
While silicon nanostructures are extensively used in electronics, the indirect bandgap of silicon poses challenges for optoelectronic applications like photovoltaics and light emitting diodes (LEDs). Here, we show that size-dependent pseudo-direct bandgap transitions in silicon nanocrystals dominate the interactions between (photoexcited) charge carriers and phonons, and hence the optoelectronic properties of silicon nanocrystals. Direct measurements of the electronic density of states (DOS) for different sized silicon nanocrystals reveal that these pseudo-direct transitions, likely arising from the nanocrystal surface, can couple with the quantum-confined silicon states. Moreover, we demonstrate that since these transitions determine the interactions of charge carriers with phonons, they change the light emission, absorption, charge carrier diffusion and phonon drag (Seebeck coefficient) in nanoscaled silicon semiconductors. Therefore, these results can have important implications for the design of optoelectronics and thermoelectric devices based on nanostructured silicon.
Nanostructured silicon ferromagnet collected by a permanent neodymium magnet.
Okuno, Takahisa; Thürmer, Stephan; Kanoh, Hirofumi
2017-11-30
Nanostructured silicon (N-Si) was prepared by anodic electroetching of p-type silicon wafers. The obtained magnetic particles were separated by a permanent neodymium magnet as a magnetic nanostructured silicon (mN-Si). The N-Si and mN-Si exhibited different magnetic properties: the N-Si exhibited ferromagnetic-like behaviour, whereas the mN-Si exhibited superparamagnetic-like behaviour.
Robbiano, Valentina; Paternò, Giuseppe M; La Mattina, Antonino A; Motti, Silvia G; Lanzani, Guglielmo; Scotognella, Francesco; Barillaro, Giuseppe
2018-05-22
Silicon photonics would strongly benefit from monolithically integrated low-threshold silicon-based laser operating at room temperature, representing today the main challenge toward low-cost and power-efficient electronic-photonic integrated circuits. Here we demonstrate low-threshold lasing from fully transparent nanostructured porous silicon (PSi) monolithic microcavities (MCs) infiltrated with a polyfluorene derivative, namely, poly(9,9-di- n-octylfluorenyl-2,7-diyl) (PFO). The PFO-infiltrated PSiMCs support single-mode blue lasing at the resonance wavelength of 466 nm, with a line width of ∼1.3 nm and lasing threshold of 5 nJ (15 μJ/cm 2 ), a value that is at the state of the art of PFO lasers. Furthermore, time-resolved photoluminescence shows a significant shortening (∼57%) of PFO emission lifetime in the PSiMCs, with respect to nonresonant PSi reference structures, confirming a dramatic variation of the radiative decay rate due to a Purcell effect. Our results, given also that blue lasing is a worst case for silicon photonics, are highly appealing for the development of low-cost, low-threshold silicon-based lasers with wavelengths tunable from visible to the near-infrared region by simple infiltration of suitable emitting polymers in monolithically integrated nanostructured PSiMCs.
Sainato, Michela; Strambini, Lucanos Marsilio; Rella, Simona; Mazzotta, Elisabetta; Barillaro, Giuseppe
2015-04-08
Surface doping of nano/mesostructured materials with metal nanoparticles to promote and optimize chemi-transistor sensing performance represents the most advanced research trend in the field of solid-state chemical sensing. In spite of the promising results emerging from metal-doping of a number of nanostructured semiconductors, its applicability to silicon-based chemi-transistor sensors has been hindered so far by the difficulties in integrating the composite metal-silicon nanostructures using the complementary metal-oxide-semiconductor (CMOS) technology. Here we propose a facile and effective top-down method for the high-yield fabrication of chemi-transistor sensors making use of composite porous silicon/gold nanostructures (cSiAuNs) acting as sensing gate. In particular, we investigate the integration of cSiAuNs synthesized by metal-assisted etching (MAE), using gold nanoparticles (NPs) as catalyst, in solid-state junction-field-effect transistors (JFETs), aimed at the detection of NO2 down to 100 parts per billion (ppb). The chemi-transistor sensors, namely cSiAuJFETs, are CMOS compatible, operate at room temperature, and are reliable, sensitive, and fully recoverable for the detection of NO2 at concentrations between 100 and 500 ppb, up to 48 h of continuous operation.
Mughal, A; El Demellawi, J K; Chaieb, Sahraoui
2014-12-14
Nano-silicon is a nanostructured material in which quantum or spatial confinement is the origin of the material's luminescence. When nano-silicon is broken into colloidal crystalline nanoparticles, its luminescence can be tuned across the visible spectrum only when the sizes of the nanoparticles, which are obtained via painstaking filtration methods that are difficult to scale up because of low yield, vary. Bright and tunable colloidal amorphous porous silicon nanostructures have not yet been reported. In this letter, we report on a 100 nm modulation in the emission of freestanding colloidal amorphous porous silicon nanostructures via band-gap engineering. The mechanism responsible for this tunable modulation, which is independent of the size of the individual particles and their distribution, is the distortion of the molecular orbitals by a strained silicon-silicon bond angle. This mechanism is also responsible for the amorphous-to-crystalline transformation of silicon.
NASA Astrophysics Data System (ADS)
Naddaf, M.; Mrad, O.; Al-zier, A.
2014-06-01
A pulsed anodic etching method has been utilized for nanostructuring of a copper-coated p-type (100) silicon substrate, using HF-based solution as electrolyte. Scanning electron microscopy reveals the formation of a nanostructured matrix that consists of island-like textures with nanosize grains grown onto fiber-like columnar structures separated with etch pits of grooved porous structures. Spatial micro-Raman scattering analysis indicates that the island-like texture is composed of single-phase cupric oxide (CuO) nanocrystals, while the grooved porous structure is barely related to formation of porous silicon (PS). X-ray diffraction shows that both the grown CuO nanostructures and the etched silicon layer have the same preferred (220) orientation. Chemical composition obtained by means of X-ray photoelectron spectroscopic (XPS) analysis confirms the presence of the single-phase CuO on the surface of the patterned CuO-PS matrix. As compared to PS formed on the bare silicon substrate, the room-temperature photoluminescence (PL) from the CuO-PS matrix exhibits an additional weak `blue' PL band as well as a blue shift in the PL band of PS (S-band). This has been revealed from XPS analysis to be associated with the enhancement in the SiO2 content as well as formation of the carbonyl group on the surface in the case of the CuO-PS matrix.
Stain-etched porous silicon nanostructures for multicrystalline silicon-based solar cells
NASA Astrophysics Data System (ADS)
Ben Rabha, M.; Hajji, M.; Belhadj Mohamed, S.; Hajjaji, A.; Gaidi, M.; Ezzaouia, H.; Bessais, B.
2012-02-01
In this paper, we study the optical, optoelectronic and photoluminescence properties of stain-etched porous silicon nanostructures obtained with different etching times. Special attention is given to the use of the stain-etched PS as an antireflection coating as well as for surface passivating capabilities. The surface morphology has been analyzed by scanning electron microscopy. The evolution of the Si-O and Si-H absorption bands was analyzed by Fourier transform infrared spectrometry before and after PS treatment. Results show that stain etching of the silicon surface drops the total reflectivity to about 7% in the 400-1100 nm wavelength range and the minority carrier lifetime enhances to about 48 μs.
NASA Astrophysics Data System (ADS)
Diener, J.; Künzner, N.; Kovalev, D.; Gross, E.; Koch, F.; Fujii, M.
2003-05-01
Electro-chemical etching of heavily doped, (110) oriented, p+ (boron) doped silicon wafers results in porous silicon (PSi) layers which exhibit a strong in-plane anisotropy of the refractive index (birefringence). Single- and multiple layers of anisotropically nanostructured silicon (Si) have been fabricated and studied by polarization-resolved reflection and transmission measurements. Dielectric stacks of birefringent PSi acting as distributed Bragg reflectors have two distinct reflection bands depending on the polarization of the incident linearly polarized light. This effect is caused by a three-dimensional (in plane and in-depth) variation of the refraction index. The possibility of fine tuning the two orthogonally polarized reflection bands and their spectral splitting is demonstrated.
Plasma Enabled Fabrication of Silicon Carbide Nanostructures
NASA Astrophysics Data System (ADS)
Fang, Jinghua; Levchenko, Igor; Aramesh, Morteza; Rider, Amanda E.; Prawer, Steven; Ostrikov, Kostya (Ken)
Silicon carbide is one of the promising materials for the fabrication of various one- and two-dimensional nanostructures. In this chapter, we discuss experimental and theoretical studies of the plasma-enabled fabrication of silicon carbide quantum dots, nanowires, and nanorods. The discussed fabrication methods include plasma-assisted growth with and without anodic aluminium oxide membranes and with or without silane as a source of silicon. In the silane-free experiments, quartz was used as a source of silicon to synthesize the silicon carbide nanostructures in an environmentally friendly process. The mechanism of the formation of nanowires and nanorods is also discussed.
NASA Astrophysics Data System (ADS)
Klingsporn, M.; Kirner, S.; Villringer, C.; Abou-Ras, D.; Costina, I.; Lehmann, M.; Stannowski, B.
2016-06-01
Nanocrystalline silicon suboxides (nc-SiOx) have attracted attention during the past years for the use in thin-film silicon solar cells. We investigated the relationships between the nanostructure as well as the chemical, electrical, and optical properties of phosphorous, doped, nc-SiO0.8:H fabricated by plasma-enhanced chemical vapor deposition. The nanostructure was varied through the sample series by changing the deposition pressure from 533 to 1067 Pa. The samples were then characterized by X-ray photoelectron spectroscopy, spectroscopic ellipsometry, Raman spectroscopy, aberration-corrected high-resolution transmission electron microscopy, selected-area electron diffraction, and a specialized plasmon imaging method. We found that the material changed with increasing pressure from predominantly amorphous silicon monoxide to silicon dioxide containing nanocrystalline silicon. The nanostructure changed from amorphous silicon filaments to nanocrystalline silicon filaments, which were found to cause anisotropic electron transport.
NASA Astrophysics Data System (ADS)
Hu, Huan; Siu, Vince S.; Gifford, Stacey M.; Kim, Sungcheol; Lu, Minhua; Meyer, Pablo; Stolovitzky, Gustavo A.
2017-12-01
The recently discovered bactericidal properties of nanostructures on wings of insects such as cicadas and dragonflies have inspired the development of similar nanostructured surfaces for antibacterial applications. Since most antibacterial applications require nanostructures covering a considerable amount of area, a practical fabrication method needs to be cost-effective and scalable. However, most reported nanofabrication methods require either expensive equipment or a high temperature process, limiting cost efficiency and scalability. Here, we report a simple, fast, low-cost, and scalable antibacterial surface nanofabrication methodology. Our method is based on metal-assisted chemical etching that only requires etching a single crystal silicon substrate in a mixture of silver nitrate and hydrofluoric acid for several minutes. We experimentally studied the effects of etching time on the morphology of the silicon nanospikes and the bactericidal properties of the resulting surface. We discovered that 6 minutes of etching results in a surface containing silicon nanospikes with optimal geometry. The bactericidal properties of the silicon nanospikes were supported by bacterial plating results, fluorescence images, and scanning electron microscopy images.
Yang, Chun Cheng; Li, Sean
2011-12-23
Recently, nanostructured silicon-based thermoelectric materials have drawn great attention owing to their excellent thermoelectric performance in the temperature range around 450 °C, which is eminently applicable for concentrated solar thermal technology. In this work, a unified nanothermodynamic model is developed to investigate the predominant factors that determine the lattice thermal conductivity of nanocrystalline, nanoporous, and nanostructured bulk Si. A systematic study shows that the thermoelectric performance of these materials can be substantially enhanced by the following three basic principles: 1) artificial manipulation and optimization of roughness with surface/interface patterning/engineering; 2) grain-size reduction with innovative fabrication techniques in a controllable fashion; and 3) optimization of material parameters, such as bulk solid-vapor transition entropy, bulk vibrational entropy, dimensionality, and porosity, to decrease the lattice thermal conductivity. These principles may be used to rationally design novel nanostructured Si-based thermoelectric materials for renewable energy applications. Copyright © 2011 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
NASA Astrophysics Data System (ADS)
Li, Hailiang; Ye, Tianchun; Shi, Lina; Xie, Changqing
2017-12-01
We present a facile and effective approach for fabricating high aspect ratio, dense and vertical silicon nanopillar arrays, using a combination of metal etching following electron-beam lithography and Au metal assisted chemical etching (MacEtch). Ti/Au nanostructures used as catalysts in MacEtch are formed by single layer resist-based electron-beam exposure followed by ion beam etching. The effects of MacEtch process parameters, including half period, etching time, the concentrations of H2O2 and HF, etching temperature and drying method are systematically investigated. Especially, we demonstrate an enhancement of etching quality by employing cold MacEtch process, and an enhancement in preventing the collapse of high aspect ratio nanostructures by employing low surface tension rinse liquid and natural evaporation in the drying stage. Using an optimized MacEtch process, vertical silicon nanopillar arrays with a period of 250 nm and aspect ratio up to 160:1 are realized. Our results should be instructive for exploring the achievable aspect ratio limit in silicon nanostructures and may find potential applications in photovoltaic devices, thermoelectric devices and x-ray diffractive optics.
Coffinier, Yannick; Kurylo, Ievgen; Drobecq, Hervé; Szunerits, Sabine; Melnyk, Oleg; Zaitsev, Vladimir N; Boukherroub, Rabah
2014-10-21
We present in this work a simple and fast preparation method of a new affinity surface-assisted laser/desorption ionization mass spectrometry (SALDI-MS) substrate based on silicon nanostructures decorated with copper particles. The silicon nanostructures were fabricated by the metal-assisted chemical etching (MACE) method. Then, superhydrophilic areas surrounded by superhydrophobic regions were formed through hydrosilylation reaction of 1-octadecene, followed by local degradation of the octadecyl layer. After that, copper particles were deposited in the hydrophilic areas by using the electroless method. We have demonstrated that these surfaces were able to perform high selective capture of model His-tag peptide even in a complex mixture such as serum solution. Then, the captured peptide was detected by mass spectrometry at a femtomolar level without the need of organic matrix.
Anchored nanostructure materials and method of fabrication
Seals, Roland D; Menchhofer, Paul A; Howe, Jane Y; Wang, Wei
2012-11-27
Anchored nanostructure materials and methods for their fabrication are described. The anchored nanostructure materials may utilize nano-catalysts that include powder-based or solid-based support materials. The support material may comprise metal, such as NiAl, ceramic, a cermet, or silicon or other metalloid. Typically, nanoparticles are disposed adjacent a surface of the support material. Nanostructures may be formed as anchored to nanoparticles that are adjacent the surface of the support material by heating the nano-catalysts and then exposing the nano-catalysts to an organic vapor. The nanostructures are typically single wall or multi-wall carbon nanotubes.
NASA Astrophysics Data System (ADS)
Lee, Seyeong; Kim, Dongyoon; Kim, Seong-Min; Kim, Jeong-Ah; Kim, Taesoo; Kim, Dong-Yu; Yoon, Myung-Han
2015-08-01
Recent advances in nanostructure-based biotechnology have resulted in a growing demand for vertical nanostructure substrates with elaborate control over the nanoscale geometry and a high-throughput preparation. In this work, we report the fabrication of non-periodic vertical silicon nanocolumn substrates via polyelectrolyte multilayer-enabled randomized nanosphere lithography. Owing to layer-by-layer deposited polyelectrolyte adhesives, uniformly-separated polystyrene nanospheres were securely attached on large silicon substrates and utilized as masks for the subsequent metal-assisted silicon etching in solution. Consequently, non-periodic vertical silicon nanocolumn arrays were successfully fabricated on a wafer scale, while each nanocolumn geometric factor, such as the diameter, height, density, and spatial patterning, could be fully controlled in an independent manner. Finally, we demonstrate that our vertical silicon nanocolumn substrates support viable cell culture with minimal cell penetration and unhindered cell motility due to the blunt nanocolumn morphology. These results suggest that vertical silicon nanocolumn substrates may serve as a useful cellular interface platform for performing a statistically meaningful number of cellular experiments in the fields of biomolecular delivery, stem cell research, etc.Recent advances in nanostructure-based biotechnology have resulted in a growing demand for vertical nanostructure substrates with elaborate control over the nanoscale geometry and a high-throughput preparation. In this work, we report the fabrication of non-periodic vertical silicon nanocolumn substrates via polyelectrolyte multilayer-enabled randomized nanosphere lithography. Owing to layer-by-layer deposited polyelectrolyte adhesives, uniformly-separated polystyrene nanospheres were securely attached on large silicon substrates and utilized as masks for the subsequent metal-assisted silicon etching in solution. Consequently, non-periodic vertical silicon nanocolumn arrays were successfully fabricated on a wafer scale, while each nanocolumn geometric factor, such as the diameter, height, density, and spatial patterning, could be fully controlled in an independent manner. Finally, we demonstrate that our vertical silicon nanocolumn substrates support viable cell culture with minimal cell penetration and unhindered cell motility due to the blunt nanocolumn morphology. These results suggest that vertical silicon nanocolumn substrates may serve as a useful cellular interface platform for performing a statistically meaningful number of cellular experiments in the fields of biomolecular delivery, stem cell research, etc. Electronic supplementary information (ESI) available. See DOI: 10.1039/c5nr02384j
2012-01-01
The application of porous silicon as a template for the fabrication of nanosized copper objects is reported. Three different types of nanostructures were formed by displacement deposition of copper on porous silicon from hydrofluoric acid-based solutions of copper sulphate: (1) copper nanoparticles, (2) quasi-continuous copper films, and (3) free porous copper membranes. Managing the parameters of porous silicon (pore sizes, porosity), deposition time, and wettability of the copper sulphate solution has allowed to achieve such variety of the copper structures. Elemental and structural analyses of the obtained structures are presented. Young modulus measurements of the porous copper membrane have been carried out and its modest activity in surface enhanced Raman spectroscopy is declared. PMID:22916840
Zhong, Sihua; Huang, Zengguang; Lin, Xingxing; Zeng, Yang; Ma, Yechi; Shen, Wenzhong
2015-01-21
Nanostructured silicon solar cells show great potential for new-generation photovoltaics due to their ability to approach ideal light-trapping. However, the nanofeatured morphology that brings about the optical benefits also introduces new recombination channels, and severe deterioration in the electrical performance even outweighs the gain in optics in most attempts. This Research News article aims to review the recent progress in the suppression of carrier recombination in silicon nanostructures, with the emphasis on the optimization of surface morphology and controllable nanostructure height and emitter doping concentration, as well as application of dielectric passivation coatings, providing design rules to realize high-efficiency nanostructured silicon solar cells on a large scale. © 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
An Array of Layers in Silicon Sulfides: Chain-like and Ground State Structures
NASA Astrophysics Data System (ADS)
Alonso-Lanza, Tomás; Ayuela, Andrés; Aguilera-Granja, Faustino
While much is known about isoelectronic materials related to carbon nanostructures, such as boron nitride layers and nanotubes, rather less is known about equivalent silicon based materials. Following the recent discovery of phosphorene, we here discuss isoelectronic silicon monosulfide monolayers. We describe a set of anisotropic ground state structures that clearly have a high stability with respect to the near isotropic silicon monosulfide monolayers. The source of the layer anisotropy is related to the presence of Si-S double chains linked by some Si-Si covalent bonds, which lie at the core of the increased stability, together with a remarkable spd hybridization on Si. The involvement of d orbitals brings more variety to silicon-sulfide based nanostructures that are isoelectronic to phosphorene, which could be relevant for future applications, adding extra degrees of freedom. Spanish Ministry of Economy and Competitiveness MINECO, Basque Government (ETORTEK Program 2014), University of the Basque Country (GrantGrant No. IT-366-07) and MPC Material Physics Center - San Sebastián.
Periodic silicon nanostructures for spectroscopic microsensors
NASA Astrophysics Data System (ADS)
Wehrspohn, Ralf B.; Gesemann, Benjamin; Pergande, Daniel; Geppert, Torsten M.; Schweizer, Stefan L.; Moretton, Susanne; Lambrecht, Armin
2011-09-01
Periodic silicon nanostructures can be used for different kinds of gas sensors depending on the analyte concentration. First we present an optical gas sensor based on the classical non-dispersive infrared technique for ppm-concentration using ultra-compact photonic crystal gas cells. It is conceptually based on low group velocities inside a photonic crystal gas cell and anti-reflection layers coupling light into the device. Experimentally, an enhancement of the CO2 infrared absorption by a factor of 2.6 to 3.5 as compared to an empty cell, due to slow light inside a 2D silicon photonic crystal gas cell, was observed; this is in excellent agreement with numerical simulations. In addition we report on silicon nanotip arrays, suitable for gas ionization in ion mobility microspectrometers (micro-IMS) having detection ranges in principle down to the ppt-range. Such instruments allow the detection of explosives, chemical warfare agents, and illicit drugs, e.g., at airports. We describe the fabrication process of large-scale-ordered nanotips with different tip shapes. Both silicon microstructures have been fabricated by photoelectrochemical etching of silicon.
3D Nanofabrication Using AFM-Based Ultrasonic Vibration Assisted Nanomachining
NASA Astrophysics Data System (ADS)
Deng, Jia
Nanolithography and nanofabrication processes have significant impact on the recent development of fundamental research areas such as physics, chemistry and biology, as well as the modern electronic devices that have reached nanoscale domain such as optoelectronic devices. Many advanced nanofabrication techniques have been developed and reported to satisfy different requirements in both research areas and applications such as electron-beam lithography. However, it is expensive to use and maintain the equipment. Atomic Force Microscope (AFM) based nanolithography processes provide an alternative approach to nanopatterning with significantly lower cost. Recently, three dimensional nanostructures have attracted a lot of attention, motivated by many applications in various fields including optics, plasmonics and nanoelectromechanical systems. AFM nanolithography processes are able to create not only two dimensional nanopatterns but also have the great potential to fabricate three dimensional nanostructures. The objectives of this research proposal are to investigate the capability of AFM-based three dimensional nanofabrication processes, to transfer the three dimensional nanostructures from resists to silicon surfaces and to use the three dimensional nanostructures on silicon in applications. Based on the understanding of literature, a novel AFM-based ultrasonic vibration assisted nanomachining system is utilized to develop three dimensional nanofabrication processes. In the system, high-frequency in plane circular xy-vibration was introduced to create a virtual tool, whose diameter is controlled by the amplitude of xy-vibration and is larger than that of a regular AFM tip. Therefore, the feature width of a single trench is tunable. Ultrasonic vibration of sample in z-direction was introduced to control the depth of single trenches, creating a high-rate 3D nanomachining process. Complicated 3D nanostructures on PMMA are fabricated under both the setpoint force and z-height control modes. Complex contours and both discrete and continuous height changes are able to be fabricated by the novel 3D nanofabrication processes. Results are imaged clearly after cleaning the debris covering on the 3D nanostructures after nanomachining process. The process is validated by fabricating various 3D nanostructures. The advantages and disadvantages are compared between these two control modes. Furthermore, the 3D nanostructures were further transferred from PMMA surfaces onto silicon surfaces using reactive ion etching (RIE) process. Recipes are developed based on the functionality of the etching gas in the transfer process. Tunable selectivity and controllable surface finishes are achieved by varying the flow rate of oxygen. The developed 3D nanofabrication process is used as a novel technique in two applications, master fabrication for soft lithography and SERS substrates fabrication. 3D nanostructures were reversely molded on PDMS and then duplicated on new PMMA substrates. 3D nanostructures are fabricated, which can be either directly used or transferred on silicon as SERS substrates after coating 80 nm gold layers. They greatly enhanced the intensity of Raman scattering with the enhancement factor of 3.11x103. These applications demonstrate the capability of the novel process of AFM-based 3D nanomachining.
DOE Office of Scientific and Technical Information (OSTI.GOV)
Klingsporn, M.; Costina, I.; Kirner, S.
2016-06-14
Nanocrystalline silicon suboxides (nc-SiO{sub x}) have attracted attention during the past years for the use in thin-film silicon solar cells. We investigated the relationships between the nanostructure as well as the chemical, electrical, and optical properties of phosphorous, doped, nc-SiO{sub 0.8}:H fabricated by plasma-enhanced chemical vapor deposition. The nanostructure was varied through the sample series by changing the deposition pressure from 533 to 1067 Pa. The samples were then characterized by X-ray photoelectron spectroscopy, spectroscopic ellipsometry, Raman spectroscopy, aberration-corrected high-resolution transmission electron microscopy, selected-area electron diffraction, and a specialized plasmon imaging method. We found that the material changed with increasing pressuremore » from predominantly amorphous silicon monoxide to silicon dioxide containing nanocrystalline silicon. The nanostructure changed from amorphous silicon filaments to nanocrystalline silicon filaments, which were found to cause anisotropic electron transport.« less
Mn-silicide nanostructures aligned on massively parallel silicon nano-ribbons
NASA Astrophysics Data System (ADS)
De Padova, Paola; Ottaviani, Carlo; Ronci, Fabio; Colonna, Stefano; Olivieri, Bruno; Quaresima, Claudio; Cricenti, Antonio; Dávila, Maria E.; Hennies, Franz; Pietzsch, Annette; Shariati, Nina; Le Lay, Guy
2013-01-01
The growth of Mn nanostructures on a 1D grating of silicon nano-ribbons is investigated at atomic scale by means of scanning tunneling microscopy, low energy electron diffraction and core level photoelectron spectroscopy. The grating of silicon nano-ribbons represents an atomic scale template that can be used in a surface-driven route to control the combination of Si with Mn in the development of novel materials for spintronics devices. The Mn atoms show a preferential adsorption site on silicon atoms, forming one-dimensional nanostructures. They are parallel oriented with respect to the surface Si array, which probably predetermines the diffusion pathways of the Mn atoms during the process of nanostructure formation.
Mn-silicide nanostructures aligned on massively parallel silicon nano-ribbons.
De Padova, Paola; Ottaviani, Carlo; Ronci, Fabio; Colonna, Stefano; Olivieri, Bruno; Quaresima, Claudio; Cricenti, Antonio; Dávila, Maria E; Hennies, Franz; Pietzsch, Annette; Shariati, Nina; Le Lay, Guy
2013-01-09
The growth of Mn nanostructures on a 1D grating of silicon nano-ribbons is investigated at atomic scale by means of scanning tunneling microscopy, low energy electron diffraction and core level photoelectron spectroscopy. The grating of silicon nano-ribbons represents an atomic scale template that can be used in a surface-driven route to control the combination of Si with Mn in the development of novel materials for spintronics devices. The Mn atoms show a preferential adsorption site on silicon atoms, forming one-dimensional nanostructures. They are parallel oriented with respect to the surface Si array, which probably predetermines the diffusion pathways of the Mn atoms during the process of nanostructure formation.
3D-fabrication of tunable and high-density arrays of crystalline silicon nanostructures
NASA Astrophysics Data System (ADS)
Wilbers, J. G. E.; Berenschot, J. W.; Tiggelaar, R. M.; Dogan, T.; Sugimura, K.; van der Wiel, W. G.; Gardeniers, J. G. E.; Tas, N. R.
2018-04-01
In this report, a procedure for the 3D-nanofabrication of ordered, high-density arrays of crystalline silicon nanostructures is described. Two nanolithography methods were utilized for the fabrication of the nanostructure array, viz. displacement Talbot lithography (DTL) and edge lithography (EL). DTL is employed to perform two (orthogonal) resist-patterning steps to pattern a thin Si3N4 layer. The resulting patterned double layer serves as an etch mask for all further etching steps for the fabrication of ordered arrays of silicon nanostructures. The arrays are made by means of anisotropic wet etching of silicon in combination with an isotropic retraction etch step of the etch mask, i.e. EL. The procedure enables fabrication of nanostructures with dimensions below 15 nm and a potential density of 1010 crystals cm-2.
Zuo, Zewen; Zhu, Kai; Ning, Lixin; Cui, Guanglei; Qu, Jun; Huang, Wanxia; Shi, Yi; Liu, Hong
2015-04-17
Integrating nanostructures onto optical fibers presents a promising strategy for developing new-fashioned devices and extending the scope of nanodevices' applications. Here we report the first fabrication of a composite silicon nanostructure on an optical fiber. Through direct chemical etching using an H2O2/HF solution, multicrystal silicon films with columnar microstructures are etched into a vertically aligned, inverted-cone-like nanorod array embedded in a nanocone array. A faster dissolution rate of the silicon at the void-rich boundary regions between the columns is found to be responsible for the separation of the columns, and thus the formation of the nanostructure array. The morphology of the nanorods primarily depends on the microstructure of the columns in the film. Through controlling the microstructure of the as-grown film and the etching parameters, the structural control of the nanostructure is promising. This fabrication method can be extended to a larger length scale, and it even allows roll-to-roll processing.
Control of Heat and Charge Transport in Nanostructured Hybrid Materials
2015-07-21
measurements in our groups have yielded device ZT values of 0.4 on thermoelectric modules consisting of vertically oriented silicon nanowires . This is... nanowires with aspect ratio’s exceeding 10,000. Temperature differences as high as 800 °C are achievable for both types. The bulk nanostructured...thermal conductivity of the silicon nanostructures. Specifically, experiments on an array of 20 nm diameter vertically oriented silicon nanowires have
Han, Weina; Liu, Furong; Yuan, Yanping; Li, Xiaowei; Wang, Qingsong; Wang, Shaojun; Jiang, Lan
2018-05-04
In this study, we report polarization-dependent concentric circular periodic surface structures on Si induced by a single shot femtosecond (fs) laser pulse based on pre-processed quasi-plasmonic annular-shaped nanostructure. An abnormal annular-shaped energy deposition of the fundamental fs laser pulse can be found by using dual-wavelength superposition of the fundamental frequency (ω) and the second-harmonic frequency (2ω) of an fs Ti:sapphire laser, which is confirmed by real beam shape detection. Based on the annular-shaped energy distribution of dual-wavelength fs laser, a concentric quasi-plasmonic corral nanostructure can be imprinted on the Au thin film. Surface plasmon polaritons (SPPs) excitations on the planar metallic nanostructures enable the manipulation of light on subwavelength scales. Thus, the pre-processed concentric quasi-plasmonic corral nanostructure can act as a precursor for the subsequent SPPs excitation and propagation by the fs laser irradiation. Using this technique, polarization-dependent semi-circular periodic surface structures on silicon can be found by the irradiation of fs laser pulse with only one shot. This research provides an additional freedom for the laser induced periodic surface structure (LIPSS) modulation based on the modulation of SPPs excitation and propagation, which plays an important role in the formation of LIPSS.
NASA Astrophysics Data System (ADS)
Han, Weina; Liu, Furong; Yuan, Yanping; Li, Xiaowei; Wang, Qingsong; Wang, Shaojun; Jiang, Lan
2018-07-01
In this study, we report polarization-dependent concentric circular periodic surface structures on Si induced by a single shot femtosecond (fs) laser pulse based on pre-processed quasi-plasmonic annular-shaped nanostructure. An abnormal annular-shaped energy deposition of the fundamental fs laser pulse can be found by using dual-wavelength superposition of the fundamental frequency (ω) and the second-harmonic frequency (2ω) of an fs Ti:sapphire laser, which is confirmed by real beam shape detection. Based on the annular-shaped energy distribution of dual-wavelength fs laser, a concentric quasi-plasmonic corral nanostructure can be imprinted on the Au thin film. Surface plasmon polaritons (SPPs) excitations on the planar metallic nanostructures enable the manipulation of light on subwavelength scales. Thus, the pre-processed concentric quasi-plasmonic corral nanostructure can act as a precursor for the subsequent SPPs excitation and propagation by the fs laser irradiation. Using this technique, polarization-dependent semi-circular periodic surface structures on silicon can be found by the irradiation of fs laser pulse with only one shot. This research provides an additional freedom for the laser induced periodic surface structure (LIPSS) modulation based on the modulation of SPPs excitation and propagation, which plays an important role in the formation of LIPSS.
NASA Astrophysics Data System (ADS)
Lu, Jennifer Qing
Nanostructures such as carbon nanotubes and semiconducting nanowires offer great technological promise due to their remarkable properties. The lack of a rational synthesis method prevents fabricating these nanostructures with desirable and consistent properties at predefined locations for device applications. In this thesis, employing polymer templates, a variety of highly ordered catalytically active transition metal nanostructures, ranging from single metallic nanoparticles of Fe, Co, Ni, Au and bimetallic nanoparticles of Ni/Fe and Co/Mo to Fe-rich silicon oxide nanodomains with uniform and tunable size and spacing have been successfully synthesized. These nanostructures have been demonstrated to be excellent catalyst systems for the synthesis of carbon nanotube and silicon nanowire. High quality, small diameter carbon nanotubes and nanowires with narrow size distribution have been successfully attained. Because these catalytically active nanostructures are uniformly distributed and do not agglomerate at the growth temperatures, uniform, high density and high quality carbon nanotube mats have been obtained. Since this polymer template approach is fully compatible with conventional top-down photolithography, lithographically selective growth of carbon nanotubes on a surface or suspended carbon nanotubes across trenches have been produced by using existing semiconductor processing. We have also shown the feasibility of producing carbon nanotubes and silicon nanowires at predefined locations on a wafer format and established a wafer-level carbon nanotube based device fabrication process. The ability of the polymer template approach to control catalyst systems at the nano-, micro- and macro-scales paves a pathway for commercialization of these 1D nanostructure-enabled devices. Beside producing well-defined, highly ordered discrete catalytically active metal-containing nanostructures by the polymer template approach, Au and Ag nanotextured surfaces have also been attained by using a self-assembled ferrocenylsilane-based inorganic block copolymer template. These Au and Ag nanotextured surfaces exhibit different surface plasmon behavior than the nanotextured surface. Greatly enhanced and uniform Raman scattering have been observed on Ag nanotextured surfaces. Highly sensitive Au nanotextured surfaces suggest their potential application as sensing surfaces for SPR-based biodetection. This simple fabrication technique of producing inorganic nanostructures with adjustable properties such as size, spacing and composition offers great promise for both fundamental research and technological development.
Recent Advances in Silicon Nanomaterial-Based Fluorescent Sensors.
Wang, Houyu; He, Yao
2017-02-03
During the past decades, owing to silicon nanomaterials' unique optical properties, benign biocompatibility, and abundant surface chemistry, different dimensional silicon nanostructures have been widely employed for rationally designing and fabricating high-performance fluorescent sensors for the detection of various chemical and biological species. Among of these, zero-dimensional silicon nanoparticles (SiNPs) and one-dimensional silicon nanowires (SiNWs) are of particular interest. Herein, we focus on reviewing recent advances in silicon nanomaterials-based fluorescent sensors from a broad perspective and discuss possible future directions. Firstly, we introduce the latest achievement of zero-dimensional SiNP-based fluorescent sensors. Next, we present recent advances of one-dimensional SiNW-based fluorescent sensors. Finally, we discuss the major challenges and prospects for the development of silicon-based fluorescent sensors.
Recent Advances in Silicon Nanomaterial-Based Fluorescent Sensors
Wang, Houyu; He, Yao
2017-01-01
During the past decades, owing to silicon nanomaterials’ unique optical properties, benign biocompatibility, and abundant surface chemistry, different dimensional silicon nanostructures have been widely employed for rationally designing and fabricating high-performance fluorescent sensors for the detection of various chemical and biological species. Among of these, zero-dimensional silicon nanoparticles (SiNPs) and one-dimensional silicon nanowires (SiNWs) are of particular interest. Herein, we focus on reviewing recent advances in silicon nanomaterials-based fluorescent sensors from a broad perspective and discuss possible future directions. Firstly, we introduce the latest achievement of zero-dimensional SiNP-based fluorescent sensors. Next, we present recent advances of one-dimensional SiNW-based fluorescent sensors. Finally, we discuss the major challenges and prospects for the development of silicon-based fluorescent sensors. PMID:28165357
Thin Carbon Layers on Nanostructured Silicon-Properties and Applications
NASA Astrophysics Data System (ADS)
Angelescu, Anca; Kleps, Irina; Miu, Mihaela; Simion, Monica; Bragaru, Adina; Petrescu, Stefana; Paduraru, Crina; Raducanu, Aurelia
Thin carbon layers such as silicon carbide (SiC) and diamond like carbon (DLC) layers on silicon, or on nanostructured silicon substrats were obtained by different methods. This paper is a review of our results in the areas of carbon layer microfabrication technologies and their properties related to different microsystem apllications. So, silicon membranes using a-SiC or DLC layers as etching mask, as well as silicon carbide membranes using a combined porous silicon — DLC structure were fabricated for sensor applications. A detailed evaluation of the field emission (FE) properties of these films was done to demonstrate their capability to be used in field emission devices. Carbon thin layers on nanostructured silicon samples were also investigated with respect to the living cell adhesion on these structures. The experiments indicate that the cell attachment on the surface of carbon coatings can be controlled by deposition parameters during the technological process.
A theoretical study on the optical properties of black silicon
NASA Astrophysics Data System (ADS)
Ma, Shijun; Liu, Shuang; Xu, Qinwei; Xu, Junwen; Lu, Rongguo; Liu, Yong; Zhong, Zhiyong
2018-03-01
There is a wide application prospect in black silicon, especially in solar cells and photoelectric detectors. For further optimization of black silicon, it is important to study its optical properties. Especially, the influence of the surface nanostructures on these properties and the light propagation within the nanostructures are relevant. In this paper, two kinds of black silicon models are studied via the finite differences time domain method. The simulated reflectance spectra matches well with the measured curve. Also, the light intensity distribution within the nanostructures shows that near 80% of the incident light are redirected and subjected to internal reflection, which provides powerful support for the good light trapping properties of black silicon.
NASA Astrophysics Data System (ADS)
Akhter, Perveen
In today's fast life, energy consumption has increased more than ever and with that the demand for a renewable and cleaner energy source as a substitute for the fossil fuels has also increased. Solar radiations are the ultimate source of energy but harvesting this energy in a cost effective way is a challenging task. Si is the dominating material for microelectronics and photovoltaics. But owing to its indirect band gap, Si is an inefficient light absorber, thus requiring a thickness of solar cells beyond tens of microns which increases the cost of solar energy. Therefore, techniques to increase light absorption in thin film Si solar cells are of great importance and have been the focus of research for a few decades now. Another big issue of technology in this fast-paced world is the computing rate or data transfer rate between components of a chip in ultra-fast processors. Existing electronic interconnects suffering from the signal delays and heat generation issues are unable to handle high data rates. A possible solution to this problem is in replacing the electronic interconnects with optical interconnects which have large data carrying capacity. However, optical components are limited in size by the fundamental laws of diffraction to about half a wavelength of light and cannot be combined with nanoscale electronic components. Tremendous research efforts have been directed in search of an advanced technology which can bridge the size gap between electronic and photonic worlds. An emerging technology of "plasmonics'' which exploits the extraordinary optical properties of metal nanostructures to tailor the light at nanoscale has been considered a potential solution to both of the above-mentioned problems. Research conducted for this dissertation has an overall goal to investigate the optical properties of silicon with metal nanostructures for photovoltaics and advanced silicon photonics applications. The first part of the research focuses on achieving enhanced light trapping in poly-Si thin films using ion implantation induced surface texturing. In addition to surface texturing produced by H and Ar ion implantations, metal nanostructures are also added to the surface to further suppress light reflection at the plasmonic resonance of metal nanostructures. Remarkable suppression has been achieved resulting in reflection from the air/Si interface to below ˜5%. In the second part, optical properties of embedded metal nanostructures in silicon matrix gettered into the ion implantation created nanocavities are studied. Embedded nanostructures can have a huge impact in future photonics applications by replacing the existing electronic and photonic components such as interconnects, waveguides, modulators and amplifiers with their plasmonic counterparts. This new method of encapsulating metal nanostructures in silicon is cost-effective and compatible with silicon fabrication technology. Spectroscopic ellipsometry is used to study the dielectric properties of silicon with embedded silver nanostructures. High absorption regions around 900 nm, corresponding to plasmonic absorption of Ag nanoparticles in Si, have been observed and compared to theoretical calculations and simulation results. The possibility of modifying the dielectric function of Si with metal nanostructures can lay the foundation for functional base structures for advanced applications in silicon photonics, photovoltaics and plasmonics.
Engineering a nanostructured "super surface" with superhydrophobic and superkilling properties.
Hasan, Jafar; Raj, Shammy; Yadav, Lavendra; Chatterjee, Kaushik
2015-05-12
We present a nanostructured "super surface" fabricated using a simple recipe based on deep reactive ion etching of a silicon wafer. The topography of the surface is inspired by the surface topographical features of dragonfly wings. The super surface is comprised of nanopillars 4 μm in height and 220 nm in diameter with random inter-pillar spacing. The surface exhibited superhydrophobicity with a static water contact angle of 154.0° and contact angle hysteresis of 8.3°. Bacterial studies revealed the bactericidal property of the surface against both gram negative ( Escherichia coli ) and gram positive ( Staphylococcus aureus ) strains through mechanical rupture of the cells by the sharp nanopillars. The cell viability on these nanostructured surfaces was nearly six-fold lower than on the unmodified silicon wafer. The nanostructured surface also killed mammalian cells (mouse osteoblasts) through mechanical rupture of the cell membrane. Thus, such nanostructured super surfaces could find applications for designing self-cleaning and anti-bacterial surfaces in diverse applications such as microfluidics, surgical instruments, pipelines and food packaging.
DOE Office of Scientific and Technical Information (OSTI.GOV)
Akhter, Perveen; Huang, Mengbing, E-mail: mhuang@albany.edu; Spratt, William
Plasmonic effects associated with metal nanostructures are expected to hold the key to tailoring light emission/propagation and harvesting solar energy in materials including single crystal silicon which remains the backbone in the microelectronics and photovoltaics industries but unfortunately, lacks many functionalities needed for construction of advanced photonic and optoelectronics devices. Currently, silicon plasmonic structures are practically possible only in the configuration with metal nanoparticles or thin film arrays on a silicon surface. This does not enable one to exploit the full potential of plasmonics for optical engineering in silicon, because the plasmonic effects are dominant over a length of ∼50 nm,more » and the active device region typically lies below the surface much beyond this range. Here, we report on a novel method for the formation of silver nanoparticles embedded within a silicon crystal through metal gettering from a silver thin film deposited at the surface to nanocavities within the Si created by hydrogen ion implantation. The refractive index of the Ag-nanostructured layer is found to be 3–10% lower or higher than that of silicon for wavelengths below or beyond ∼815–900 nm, respectively. Around this wavelength range, the optical extinction values increase by a factor of 10–100 as opposed to the pure silicon case. Increasing the amount of gettered silver leads to an increased extinction as well as a redshift in wavelength position for the resonance. This resonance is attributed to the surface plasmon excitation of the resultant silver nanoparticles in silicon. Additionally, we show that the profiles for optical constants in silicon can be tailored by varying the position and number of nanocavity layers. Such silicon crystals with embedded metal nanostructures would offer novel functional base structures for applications in silicon photonics, optoelectronics, photovoltaics, and plasmonics.« less
Intermediate Bandgap Solar Cells From Nanostructured Silicon
DOE Office of Scientific and Technical Information (OSTI.GOV)
Black, Marcie
2014-10-30
This project aimed to demonstrate increased electronic coupling in silicon nanostructures relative to bulk silicon for the purpose of making high efficiency intermediate bandgap solar cells using silicon. To this end, we formed nanowires with controlled crystallographic orientation, small diameter, <111> sidewall faceting, and passivated surfaces to modify the electronic band structure in silicon by breaking down the symmetry of the crystal lattice. We grew and tested these silicon nanowires with <110>-growth axes, which is an orientation that should produce the coupling enhancement.
Enhanced light absorption of silicon solar cells with dielectric nanostructured back reflector
NASA Astrophysics Data System (ADS)
Ren, Rui; Zhong, Zheng
2018-06-01
This paper investigates the light absorption property of nanostructured dielectric reflectors in silicon thin film solar cells using numerical simulation. Flat thin film solar cell with ZnO nanostructured back reflector can produce comparable photocurrent to the control model with Ag nanostructured back reflector. Furthermore, when it is integrated with nano-pillar surface decoration, a photocurrent density of 29.5 mA/cm2 can be achieved, demonstrating a photocurrent enhancement of 5% as compared to the model with Ag nanostructured back reflector.
``New'' energy states lead to phonon-less optoelectronic properties in nanostructured silicon
NASA Astrophysics Data System (ADS)
Singh, Vivek; Yu, Yixuan; Korgel, Brian; Nagpal, Prashant
2014-03-01
Silicon is arguably one of the most important technological material for electronic applications. However, indirect bandgap of silicon semiconductor has prevented optoelectronic applications due to phonon assistance required for photon light absorption/emission. Here we show, that previously unexplored surface states in nanostructured silicon can couple with quantum-confined energy levels, leading to phonon-less exciton-recombination and photoluminescence. We demonstrate size dependence (2.4 - 8.3 nm) of this coupling observed in small uniform silicon nanocrystallites, or quantum-dots, by direct measurements of their electronic density of states and low temperature measurements. To enhance the optical absorption of the these silicon quantum-dots, we utilize generation of resonant surface plasmon polariton waves, which leads to several fold increase in observed spectrally-resolved photocurrent near the quantum-confined bandedge states. Therefore, these enhanced light emission and absorption enhancement can have important implications for applications of nanostructured silicon for optoelectronic applications in photovoltaics and LEDs.
Nanophotonic applications for silicon-on-insulator (SOI)
NASA Astrophysics Data System (ADS)
de la Houssaye, Paul R.; Russell, Stephen D.; Shimabukuro, Randy L.
2004-07-01
Silicon-on-insulator is a proven technology for very large scale integration of microelectronic devices. The technology also offers the potential for development of nanophotonic devices and the ability to interface such devices to the macroscopic world. This paper will report on fabrication techniques used to form nano-structured silicon wires on an insulating structure that is amenable to interfacing nanostructured sensors with high-performance microelectronic circuitry for practical implementation. Nanostructures formed on silicon-on-sapphire can also exploit the transparent substrate for novel device geometries. This research harnesses the unique properties of a high-quality single crystal film of silicon on sapphire and uses the film thickness as one of the confinement dimensions. Lateral arrays of silicon nanowires were fabricated in the thin (5 to 20 nm) silicon layer and studied. This technique offers simplified contact to individual wires and provides wire surfaces that are more readily accessible for controlled alteration and device designs.
Nanostructured porous silicon-mediated drug delivery.
Martín-Palma, Raúl J; Hernández-Montelongo, Jacobo; Torres-Costa, Vicente; Manso-Silván, Miguel; Muñoz-Noval, Álvaro
2014-08-01
The particular properties of nanostructured porous silicon (nanoPS) make it an attractive material for controlled and localized release of therapeutics within the body, aiming at increased efficacy and reduced risks of potential side effects. Since this is a rapidly evolving field as a consequence of the number of research groups involved, a critical review of the state of the art is necessary. In this work, the most promising and successful applications of nanoPS in the field of drug delivery are reviewed and discussed. Two key issues such as drug loading and release are also analyzed in detail. The development of multifunctional (hybrid) systems, aiming at imparting additional functionalities to the nanoPS particles such as luminescence, magnetic response and/or plasmonic effects (allowing simultaneous tracking and guiding), is also examined. Nanostructured materials based on silicon are promising platforms for pharmaceutical applications given their ability to degrade and low toxicity. However, a very limited number of clinical applications have been demonstrated so far.
Wurtzite-Phased InP Micropillars Grown on Silicon with Low Surface Recombination Velocity.
Li, Kun; Ng, Kar Wei; Tran, Thai-Truong D; Sun, Hao; Lu, Fanglu; Chang-Hasnain, Connie J
2015-11-11
The direct growth of III-V nanostructures on silicon has shown great promise in the integration of optoelectronics with silicon-based technologies. Our previous work showed that scaling up nanostructures to microsize while maintaining high quality heterogeneous integration opens a pathway toward a complete photonic integrated circuit and high-efficiency cost-effective solar cells. In this paper, we present a thorough material study of novel metastable InP micropillars monolithically grown on silicon, focusing on two enabling aspects of this technology-the stress relaxation mechanism at the heterogeneous interface and the microstructure surface quality. Aberration-corrected transmission electron microscopy studies show that InP grows directly on silicon without any amorphous layer in between. A set of periodic dislocations was found at the heterointerface, relaxing the 8% lattice mismatch between InP and Si. Single crystalline InP therefore can grow on top of the fully relaxed template, yielding high-quality micropillars with diameters expanding beyond 1 μm. An interesting power-dependence trend of carrier recombination lifetimes was captured for these InP micropillars at room temperature, for the first time for micro/nanostructures. By simply combining internal quantum efficiency with carrier lifetime, we revealed the recombination dynamics of nonradiative and radiative portions separately. A very low surface recombination velocity of 1.1 × 10(3) cm/sec was obtained. In addition, we experimentally estimated the radiative recombination B coefficient of 2.0 × 10(-10) cm(3)/sec for pure wurtzite-phased InP. These values are comparable with those obtained from InP bulk. Exceeding the limits of conventional nanowires, our InP micropillars combine the strengths of both nanostructures and bulk materials and will provide an avenue in heterogeneous integration of III-V semiconductor materials onto silicon platforms.
Ensafi, Ali A; Ahmadi, Najmeh; Rezaei, Behzad; Abarghoui, Mehdi Mokhtari
2015-03-01
A porous silicon/palladium nanostructure was prepared and used as a new electrode material for the simultaneous determination of acetaminophen (ACT) and codeine (COD). Palladium nanoparticles were assembled on porous silicon (PSi) microparticles by a simple redox reaction between the Pd precursor and PSi in an aqueous solution of hydrofluoric acid. This novel nanostructure was characterized by different spectroscopic and electrochemical techniques including scanning electron microscopy, X-ray diffraction, energy dispersive X-ray spectroscopy, fourier transform infrared spectroscopy and cyclic voltammetry. The high electrochemical activity, fast electron transfer rate, high surface area and good antifouling properties of this nanostructure enhanced the oxidation peak currents and reduced the peak potentials of ACT and COD at the surface of the proposed sensor. Simultaneous determination of ACT and COD was explored using differential pulse voltammetry. A linear range of 1.0-700.0 µmol L(-1) was achieved for ACT and COD with detection limits of 0.4 and 0.3 µmol L(-1), respectively. Finally, the proposed method was used for the determination of ACT and COD in blood serum, urine and pharmaceutical compounds. Copyright © 2014 Elsevier B.V. All rights reserved.
Broadband antireflective silicon nanostructures produced by spin-coated Ag nanoparticles
2014-01-01
We report the fabrication of broadband antireflective silicon (Si) nanostructures fabricated using spin-coated silver (Ag) nanoparticles as an etch mask followed by inductively coupled plasma (ICP) etching process. This fabrication technique is a simple, fast, cost-effective, and high-throughput method, making it highly suitable for mass production. Prior to the fabrication of Si nanostructures, theoretical investigations were carried out using a rigorous coupled-wave analysis method in order to determine the effects of variations in the geometrical features of Si nanostructures to obtain antireflection over a broad wavelength range. The Ag ink ratio and ICP etching conditions, which can affect the distribution, distance between the adjacent nanostructures, and height of the resulting Si nanostructures, were carefully adjusted to determine the optimal experimental conditions for obtaining desirable Si nanostructures for practical applications. The Si nanostructures fabricated using the optimal experimental conditions showed a very low average reflectance of 8.3%, which is much lower than that of bulk Si (36.8%), as well as a very low reflectance for a wide range of incident angles and different polarizations over a broad wavelength range of 300 to 1,100 nm. These results indicate that the fabrication technique is highly beneficial to produce antireflective structures for Si-based device applications requiring low light reflection. PMID:24484636
NASA Astrophysics Data System (ADS)
Fündling, Sönke; Sökmen, Ünsal; Behrends, Arne; Al-Suleiman, Mohamed Aid Mansur; Merzsch, Stephan; Li, Shunfeng; Bakin, Andrey; Wehmann, Hergo-Heinrich; Waag, Andreas; Lähnemann, Jonas; Jahn, Uwe; Trampert, Achim; Riechert, Henning
2010-07-01
GaN and ZnO are both wide band gap semiconductors with interesting properties concerning optoelectronic and sensor device applications. Due to the lack or the high costs of native substrates, alternatives like sapphire, silicon, or silicon carbide are taken, but the resulting lattice and thermal mismatches lead to increased defect densities which reduce the material quality. In contrast, nanostructures with high aspect ratio have lower defect densities as compared to layers. In this work, we give an overview on our results achieved on both ZnO as well as GaN based nanorods. ZnO nanostructures were grown by a wet chemical approach as well as by VPT on different substrates - even on flexible polymers. To compare the growth results we analyzed the structures by XRD and PL and show possible device applications. The GaN nano- and microstructures were grown by metal organic vapor phase epitaxy either in a self- organized process or by selective area growth for a better control of shape and material composition. Finally we take a look onto possible device applications, presenting our attempts, e.g., to build LEDs based on GaN nanostructures.
NASA Astrophysics Data System (ADS)
Biserni, E.; Xie, M.; Brescia, R.; Scarpellini, A.; Hashempour, M.; Movahed, P.; George, S. M.; Bestetti, M.; Li Bassi, A.; Bruno, P.
2015-01-01
Silicon-based electrodes for Li-ion batteries (LIB) attract much attention because of their high theoretical capacity. However, their large volume change during lithiation results in poor cycling due to mechanical cracking. Moreover, silicon can hardly form a stable solid electrolyte interphase (SEI) layer with common electrolytes. We present a safe, innovative strategy to prepare nanostructured silicon-carbon anodes in a two-step process. The nanoporosity of Si films accommodates the volume expansion while a disordered graphitic C layer on top promotes the formation of a stable SEI. This approach shows its promises: carbon-coated porous silicon anodes perform in a very stable way, reaching the areal capacity of ∼175 μAh cm-2, and showing no decay for at least 1000 cycles. With requiring only a two-step deposition process at moderate temperatures, this novel very simple cell concept introduces a promising way to possibly viable up-scaled production of next-generation nanostructured Si anodes for lithium-ion microbatteries.
2012-01-01
A method for fabrication of three-dimensional (3D) silicon nanostructures based on selective formation of porous silicon using ion beam irradiation of bulk p-type silicon followed by electrochemical etching is shown. It opens a route towards the fabrication of two-dimensional (2D) and 3D silicon-based photonic crystals with high flexibility and industrial compatibility. In this work, we present the fabrication of 2D photonic lattice and photonic slab structures and propose a process for the fabrication of 3D woodpile photonic crystals based on this approach. Simulated results of photonic band structures for the fabricated 2D photonic crystals show the presence of TE or TM gap in mid-infrared range. PMID:22824206
The fabrication of nitrogen detector porous silicon nanostructures
NASA Astrophysics Data System (ADS)
Husairi, F. S.; Othman, N.; Eswar, K. A.; Guliling, Muliyadi; Khusaimi, Z.; Rusop, M.; Abdullah, S.
2018-05-01
In this study the porous silicon nanostructure used as a the nitrogen detector was fabricated by using anodization method because of simple and easy to handle. This method using 20 mA/ cm2 of current density and the etching time is from 10 - 40 minutes. The properties of the porous silicon nanostructure analyzed using I-V testing (electrical properties) and photoluminescence spectroscopy. From the I-V testing, sample PsiE40 where the sensitivity is 25.4% is a sensitivity of PSiE40 at 10 seconds exposure time.
Le Borgne, Vincent; Agati, Marta; Boninelli, Simona; Castrucci, Paola; De Crescenzi, Maurizio; Dolbec, Richard; El Khakani, My Ali
2017-07-14
We report on a method for the extraction of silicon nanowires (SiNWs) from the by-product of a plasma torch based spheroidization process of silicon. This by-product is a nanopowder which consists of a mixture of SiNWs and silicon particles. By optimizing a centrifugation based process, we were able to extract substantial amounts of highly pure Si nanomaterials (mainly SiNWs and Si nanospheres (SiNSs)). While the purified SiNWs were found to have typical outer diameters in the 10-15 nm range and lengths of up to several μm, the SiNSs have external diameters in the 10-100 nm range. Interestingly, the SiNWs are found to have a thinner Si core (2-5 nm diam.) and an outer silicon oxide shell (with a typical thickness of ∼5-10 nm). High resolution transmission electron microscopy (HRTEM) observations revealed that many SiNWs have a continuous cylindrical core, whereas others feature a discontinuous core consisting of a chain of Si nanocrystals forming a sort of 'chaplet-like' structures. These plasma-torch-produced SiNWs are highly pure with no trace of any metal catalyst, suggesting that they mostly form through SiO-catalyzed growth scheme rather than from metal-catalyzed path. The extracted Si nanostructures are shown to exhibit a strong photoluminescence (PL) which is found to blue-shift from 950 to 680 nm as the core size of the Si nanostructures decreases from ∼5 to ∼3 nm. This near IR-visible PL is shown to originate from quantum confinement (QC) in Si nanostructures. Consistently, the sizes of the Si nanocrystals directly determined from HRTEM images corroborate well with those expected by QC theory.
NASA Astrophysics Data System (ADS)
Le Borgne, Vincent; Agati, Marta; Boninelli, Simona; Castrucci, Paola; De Crescenzi, Maurizio; Dolbec, Richard; El Khakani, My Ali
2017-07-01
We report on a method for the extraction of silicon nanowires (SiNWs) from the by-product of a plasma torch based spheroidization process of silicon. This by-product is a nanopowder which consists of a mixture of SiNWs and silicon particles. By optimizing a centrifugation based process, we were able to extract substantial amounts of highly pure Si nanomaterials (mainly SiNWs and Si nanospheres (SiNSs)). While the purified SiNWs were found to have typical outer diameters in the 10-15 nm range and lengths of up to several μm, the SiNSs have external diameters in the 10-100 nm range. Interestingly, the SiNWs are found to have a thinner Si core (2-5 nm diam.) and an outer silicon oxide shell (with a typical thickness of ˜5-10 nm). High resolution transmission electron microscopy (HRTEM) observations revealed that many SiNWs have a continuous cylindrical core, whereas others feature a discontinuous core consisting of a chain of Si nanocrystals forming a sort of ‘chaplet-like’ structures. These plasma-torch-produced SiNWs are highly pure with no trace of any metal catalyst, suggesting that they mostly form through SiO-catalyzed growth scheme rather than from metal-catalyzed path. The extracted Si nanostructures are shown to exhibit a strong photoluminescence (PL) which is found to blue-shift from 950 to 680 nm as the core size of the Si nanostructures decreases from ˜5 to ˜3 nm. This near IR-visible PL is shown to originate from quantum confinement (QC) in Si nanostructures. Consistently, the sizes of the Si nanocrystals directly determined from HRTEM images corroborate well with those expected by QC theory.
Enhanced light absorption in an ultrathin silicon solar cell utilizing plasmonic nanostructures
NASA Astrophysics Data System (ADS)
Xiao, Sanshui; Mortensen, Niels A.
2012-10-01
Nowadays, bringing photovoltaics to the market is mainly limited by high cost of electricity produced by the photovoltaic solar cell. Thin-film photovoltaics offers the potential for a significant cost reduction compared to traditional photovoltaics. However, the performance of thin-film solar cells is generally limited by poor light absorption. We propose an ultrathin-film silicon solar cell configuration based on SOI structure, where the light absorption is enhanced by use of plasmonic nanostructures. By placing a one-dimensional plasmonic nanograting on the bottom of the solar cell, the generated photocurrent for a 200 nm-thickness crystalline silicon solar cell can be enhanced by 90% in the considered wavelength range. These results are paving a promising way for the realization of high-efficiency thin-film solar cells.
Luminescence and related properties of nanocrystalline porous silicon
NASA Astrophysics Data System (ADS)
Koshida, N.
This document is part of subvolume C3 'Optical Properties' of volume 34 'Semiconductor quantum structures' of Landolt-Börnstein, Group III, Condensed Matter, on the optical properties of quantum structures based on group IV semiconductors. It discusses luminescence and related properties of nanocrystalline porous silicon. Topics include an overview of nanostructured silicon, its fabrication technology, and properties of nanocrystalline porous silicon such as confinement effects, photoluminescence, electroluminesce, carrier charging effects, ballistic transport and emission, and thermally induced acoustic emission.
Temperature-feedback direct laser reshaping of silicon nanostructures
NASA Astrophysics Data System (ADS)
Aouassa, M.; Mitsai, E.; Syubaev, S.; Pavlov, D.; Zhizhchenko, A.; Jadli, I.; Hassayoun, L.; Zograf, G.; Makarov, S.; Kuchmizhak, A.
2017-12-01
Direct laser reshaping of nanostructures is a cost-effective and fast approach to create or tune various designs for nanophotonics. However, the narrow range of required laser parameters along with the lack of in-situ temperature control during the nanostructure reshaping process limits its reproducibility and performance. Here, we present an approach for direct laser nanostructure reshaping with simultaneous temperature control. We employ thermally sensitive Raman spectroscopy during local laser melting of silicon pillar arrays prepared by self-assembly microsphere lithography. Our approach allows establishing the reshaping threshold of an individual nanostructure, resulting in clean laser processing without overheating of the surrounding area.
Low-energy ion beam synthesis of Ag endotaxial nanostructures in silicon
NASA Astrophysics Data System (ADS)
Nagarajappa, Kiran; Guha, Puspendu; Thirumurugan, Arun; Satyam, Parlapalli V.; Bhatta, Umananda M.
2018-06-01
Coherently, embedded metal nanostructures (endotaxial) are known to have potential applications concerning the areas of plasmonics, optoelectronics and thermoelectronics. Incorporating appropriate concentrations of metal atoms into crystalline silicon is critical for these applications. Therefore, choosing proper dose of low-energy ions, instead of depositing thin film as a source of metal atoms, helps in avoiding surplus concentration of metal atoms that diffuses into the silicon crystal. In this work, 30 keV silver negative ions are implanted into a SiO x /Si(100) at two different fluences: 1 × 1015 and 2.5 × 1015 Ag- ions/cm2. Later, the samples are annealed at 700 °C for 1 h in Ar atmosphere. Embedded silver nanostructures have been characterized using planar and cross-sectional TEM (XTEM) analysis. Planar TEM analysis shows the formation of mostly rectangular silver nanostructures following the fourfold symmetry of the substrate. XTEM analysis confirms the formation of prism-shaped silver nanostructures embedded inside crystalline silicon. Endotaxial nature of the embedded crystals has been discussed using selected area electron diffraction analysis.
Towards the Development of Electrical Biosensors Based on Nanostructured Porous Silicon
Recio-Sánchez, Gonzalo; Torres-Costa, Vicente; Manso, Miguel; Gallach, Darío; López-García, Juan; Martín-Palma, Raúl J.
2010-01-01
The typical large specific surface area and high reactivity of nanostructured porous silicon (nanoPS) make this material very suitable for the development of sensors. Moreover, its biocompatibility and biodegradability opens the way to the development of biosensors. As such, in this work the use of nanoPS in the field of electrical biosensing is explored. More specifically, nanoPS-based devices with Al/nanoPS/Al and Au-NiCr/nanoPS/Au-NiCr structures were fabricated for the electrical detection of glucose and Escherichia Coli bacteria at different concentrations. The experimental results show that the current-voltage characteristics of these symmetric metal/nanoPS/metal structures strongly depend on the presence/absence and concentration of species immobilized on the surface.
NASA Astrophysics Data System (ADS)
Zhou, Yanguang; Gong, Xiaojing; Xu, Ben; Hu, Ming
2017-08-01
Electrical and thermal transport in silicon germanium superlattice nanostructures has received extensive attention from scientists for understanding carrier properties at the nanoscale, and the figure-of-merit (ZT) reported in such structures has inspired engineers to develop cost-effective waste heat recovery systems. In this paper, the thermoelectric transport properties of the silicon-based superlattice- and anti-superlattice-nanocrystalline heterostructures are systematically studied by first-principles and molecular dynamics simulations combined with the Boltzmann transport theory. The thermal conductivity, which is thought to be the essential bottleneck for bulk crystalline Si to gain a high ZT value, of such structures is found to be reduced by two orders of magnitude and reaches a level far below the amorphous limit of Si. This is achieved due to the extremely strong phonon-boundary scattering at both grain boundaries and Si-Ge interfaces, which will lead to the phonon mean free path being much smaller than the grain size (Casmir limit): for instance, the dominant phonons are in range of 0.5 to 3 nm for the heterostructures with a grain size of around 8 nm. Meanwhile, the power factor can be preserved at the level comparable to bulk crystalline because of the quantum confinement effect, which resulted from the conduction band minima converge, reduction of band gap, and the short mean free path of carriers. As a result, the ZT of such superlattice based nanomembranes can reach around 0.3 at room temperature, which is two orders of magnitude higher than the bulk crystalline case. The corresponding bulk superlattice-nanocrystalline heterostructures possess a ZT value of 0.5 at room temperature, which is superior to all other bulk silicon-based thermoelectrics. Our results here show that nanostructuring the superlattice structure can further decrease the thermal conductivity while keeping the electrical transport properties at the bulk comparable level, and provides a new strategy for enhancing the thermoelectric performance of the silicon-based nanostructures.
Structurally controlled deposition of silicon onto nanowires
DOE Office of Scientific and Technical Information (OSTI.GOV)
Wang, Weijie; Liu, Zuqin; Han, Song
Provided herein are nanostructures for lithium ion battery electrodes and methods of fabrication. In some embodiments, a nanostructure template coated with a silicon coating is provided. The silicon coating may include a non-conformal, more porous layer and a conformal, denser layer on the non-conformal, more porous layer. In some embodiments, two different deposition processes, e.g., a PECVD layer to deposit the non-conformal layer and a thermal CVD process to deposit the conformal layer, are used. Anodes including the nanostructures have longer cycle lifetimes than anodes made using either a PECVD or thermal CVD method alone.
Srinivasan, Aravind; Ray, Asok K
2006-01-01
Silicon fullerene like nanostructures with six carbon atoms on the surface of Si60 cages by substitution, as well as inside the cage at various symmetry orientations have been studied within the generalized gradient approximation to density functional theory. Full geometry optimizations have been performed without any symmetry constraints using the Gaussian 03 suite of programs and the LANL2DZ basis set. Thus, for the silicon atom, the Hay-Wadt pseudopotential with the associated basis set are used for the core electrons and the valence electrons, respectively. For the carbon atom, the Dunning/Huzinaga double zeta basis set is employed. Electronic and geometric properties of the nanostructures are presented and discussed in detail. It was found that optimized silicon-carbon fullerene like nanostructures have increased stability compared to bare Si60 cage and the stability depends on the orientation of carbon atoms, as well as on the nature of bonding between silicon and carbon atoms and also on the carbon-carbon bonding.
Thermoelectric properties of nanostructured porous silicon
NASA Astrophysics Data System (ADS)
Martín-Palma, R. J.; Cabrera, H.; Martín-Adrados, B.; Korte, D.; Pérez-Cappe, E.; Mosqueda, Y.; Frutis, M. A.; Danguillecourt, E.
2018-01-01
In this work we report on the thermoelectric properties of nanostructured porous silicon (nanoPS) layers grown onto silicon substrates. More specifically, nanoPS layers of different porosity, nanocrystal size, and thickness were fabricated and their electrical conductivities, Seebeck coefficients, and thermal conductivities were subsequently measured. It was found that these parameters show a strong dependence on the characteristics of the nanoPS layers and thus can be controlled.
NASA Astrophysics Data System (ADS)
Li, Xiaowei; Xie, Qian; Jiang, Lan; Han, Weina; Wang, Qingsong; Wang, Andong; Hu, Jie; Lu, Yongfeng
2017-05-01
In this study, silicon micro/nanostructures of controlled size and shape are fabricated by chemical-etching-assisted femtosecond laser single-pulse irradiation, which is a flexible, high-throughput method. The pulse fluence is altered to create various laser printing patterns for the etching mask, resulting in the sequential evolution of three distinct surface micro/nanostructures, namely, ring-like microstructures, flat-top pillar microstructures, and spike nanostructures. The characterized diameter of micro/nanostructures reveals that they can be flexibly tuned from the micrometer (˜2 μm) to nanometer (˜313 nm) scales by varying the laser pulse fluence in a wide range. Micro-Raman spectroscopy and transmission electron microscopy are utilized to demonstrate that the phase state changes from single-crystalline silicon (c-Si) to amorphous silicon (a-Si) after single-pulse femtosecond laser irradiation. This amorphous layer with a lower etching rate then acts as a mask in the wet etching process. Meanwhile, the on-the-fly punching technique enables the efficient fabrication of large-area patterned surfaces on the centimeter scale. This study presents a highly efficient method of controllably manufacturing silicon micro/nanostructures with different single-pulse patterns, which has promising applications in the photonic, solar cell, and sensors fields.
Hybrid silicon honeycomb/organic solar cells with enhanced efficiency using surface etching.
Liu, Ruiyuan; Sun, Teng; Liu, Jiawei; Wu, Shan; Sun, Baoquan
2016-06-24
Silicon (Si) nanostructure-based photovoltaic devices are attractive for their excellent optical and electrical performance, but show lower efficiency than their planar counterparts due to the increased surface recombination associated with the high surface area and roughness. Here, we demonstrate an efficiency enhancement for hybrid nanostructured Si/polymer solar cells based on a novel Si honeycomb (SiHC) structure using a simple etching method. SiHC structures are fabricated using a combination of nanosphere lithography and plasma treatment followed by a wet chemical post-etching. SiHC has shown superior light-trapping ability in comparison with the other Si nanostructures, along with a robust structure. Anisotropic tetramethylammonium hydroxide etching not only tunes the final surface morphologies of the nanostructures, but also reduces the surface roughness leading to a lower recombination rate in the hybrid solar cells. The suppressed recombination loss, benefiting from the reduced surface-to-volume ratio and roughness, has resulted in a high open-circuit voltage of 600 mV, a short-circuit current of 31.46 mA cm(-2) due to the light-trapping ability of the SiHCs, and yields a power conversion efficiency of 12.79% without any other device structure optimization.
NASA Astrophysics Data System (ADS)
Zhu, G. H.; Lee, H.; Lan, Y. C.; Wang, X. W.; Joshi, G.; Wang, D. Z.; Yang, J.; Vashaee, D.; Guilbert, H.; Pillitteri, A.; Dresselhaus, M. S.; Chen, G.; Ren, Z. F.
2009-05-01
The mechanism for phonon scattering by nanostructures and by point defects in nanostructured silicon (Si) and the silicon germanium (Ge) alloy and their thermoelectric properties are investigated. We found that the thermal conductivity is reduced by a factor of 10 in nanostructured Si in comparison with bulk crystalline Si. However, nanosize interfaces are not as effective as point defects in scattering phonons with wavelengths shorter than 1 nm. We further found that a 5at.% Ge replacing Si is very efficient in scattering phonons shorter than 1 nm, resulting in a further thermal conductivity reduction by a factor of 2, thereby leading to a thermoelectric figure of merit 0.95 for Si95Ge5, similar to that of large grained Si80Ge20 alloys.
Dayyoub, Eyas; Hobler, Christian; Nonnweiler, Pierina; Keusgen, Michael; Bakowsky, Udo
2013-07-01
Here we present a new method for providing nanostructured drug-loaded polymer films which enable control of film surface morphology and delivery of therapeutic agents. Silicon wafers were employed as models for implanted biomaterials and poly(lactic-co-glycolic acid) (PLGA) nanoparticles were assembled onto the silicon surface by electrostatic interaction. Monolayers of the PLGA particles were deposited onto the silicon surface upon incubation in an aqueous particle suspension. Particle density and surface coverage of the silicon wafers were varied by altering particle concentration, incubation time in nanoparticle suspension and ionic strength of the suspension. Dye loaded nanoparticles were prepared and assembled to silicon surface to form nanoparticle films. Fluorescence intensity measurements showed diffusion-controlled release of the dye over two weeks and atomic force microscopy (AFM) analysis revealed that these particles remained attached to the surface during the incubation time. This work suggests that coating implants with PLGA nanoparticles is a versatile technique which allows drug release from the implant surface and modulation of surface morphology. Copyright © 2013 Elsevier B.V. All rights reserved.
NASA Astrophysics Data System (ADS)
Mock, Alyssa; Carlson, Timothy; VanDerslice, Jeremy; Mohrmann, Joel; Woollam, John A.; Schubert, Eva; Schubert, Mathias
2017-11-01
Optical changes in alumina passivated highly porous silicon slanted columnar thin films during controlled exposure to toluene vapor are reported. Electron-beam evaporation glancing angle deposition and subsequent atomic layer deposition are utilized to deposit alumina passivated nanostructured porous silicon thin films. In-situ Mueller matrix generalized spectroscopic ellipsometry in an environmental cell is then used to determine changes in optical properties of the nanostructured thin films by inspection of individual Mueller matrix elements, each of which exhibit sensitivity to adsorption. The use of a multiple-layered effective medium approximation model allows for accurate description of the inhomogeneous nature of toluene adsorption onto alumina passivated highly porous silicon slanted columnar thin films.
NASA Astrophysics Data System (ADS)
Sarkar, Kalyan; Das, Debajyoti
2018-04-01
Arrays of silicon nanostructures have been produced by single step Metal Assisted Chemical Etching (MACE) of single crystal Si-wafers at room temp and normal atmospheric condition. By studying optical and structural properties of the silicon nanowire like structures synthesized by Ag catalyst assisted chemical etching, a significant change in the reflectance spectra has been obtained leading to a gross reduction in reflectance from ˜31% to less than 1%. In comparison with bulk c-Si, the surface areas of the nanostructured samples have been increased significantly with the etching time, leading to an efficient absorption of light, favorable for photovoltaic applications.
NASA Astrophysics Data System (ADS)
Ren, Zongqing; Lee, Jaeho
2018-01-01
Artificial nanostructures have improved prospects of thermoelectric systems by enabling selective scattering of phonons and demonstrating significant thermal conductivity reductions. While the low thermal conductivity provides necessary temperature gradients for thermoelectric conversion, the heat generation is detrimental to electronic systems where high thermal conductivity are preferred. The contrasting needs of thermal conductivity are evident in thermoelectric cooling systems, which call for a fundamental breakthrough. Here we show a silicon nanostructure with vertically etched holes, or holey silicon, uniquely combines the low thermal conductivity in the in-plane direction and the high thermal conductivity in the cross-plane direction, and that the anisotropy is ideal for lateral thermoelectric cooling. The low in-plane thermal conductivity due to substantial phonon boundary scattering in small necks sustains large temperature gradients for lateral Peltier junctions. The high cross-plane thermal conductivity due to persistent long-wavelength phonons effectively dissipates heat from a hot spot to the on-chip cooling system. Our scaling analysis based on spectral phonon properties captures the anisotropic size effects in holey silicon and predicts the thermal conductivity anisotropy ratio up to 20. Our numerical simulations demonstrate the thermoelectric cooling effectiveness of holey silicon is at least 30% greater than that of high-thermal-conductivity bulk silicon and 400% greater than that of low-thermal-conductivity chalcogenides; these results contrast with the conventional perception preferring either high or low thermal conductivity materials. The thermal conductivity anisotropy is even more favorable in laterally confined systems and will provide effective thermal management solutions for advanced electronics.
Ren, Zongqing; Lee, Jaeho
2018-01-26
Artificial nanostructures have improved prospects of thermoelectric systems by enabling selective scattering of phonons and demonstrating significant thermal conductivity reductions. While the low thermal conductivity provides necessary temperature gradients for thermoelectric conversion, the heat generation is detrimental to electronic systems where high thermal conductivity are preferred. The contrasting needs of thermal conductivity are evident in thermoelectric cooling systems, which call for a fundamental breakthrough. Here we show a silicon nanostructure with vertically etched holes, or holey silicon, uniquely combines the low thermal conductivity in the in-plane direction and the high thermal conductivity in the cross-plane direction, and that the anisotropy is ideal for lateral thermoelectric cooling. The low in-plane thermal conductivity due to substantial phonon boundary scattering in small necks sustains large temperature gradients for lateral Peltier junctions. The high cross-plane thermal conductivity due to persistent long-wavelength phonons effectively dissipates heat from a hot spot to the on-chip cooling system. Our scaling analysis based on spectral phonon properties captures the anisotropic size effects in holey silicon and predicts the thermal conductivity anisotropy ratio up to 20. Our numerical simulations demonstrate the thermoelectric cooling effectiveness of holey silicon is at least 30% greater than that of high-thermal-conductivity bulk silicon and 400% greater than that of low-thermal-conductivity chalcogenides; these results contrast with the conventional perception preferring either high or low thermal conductivity materials. The thermal conductivity anisotropy is even more favorable in laterally confined systems and will provide effective thermal management solutions for advanced electronics.
Tellurium nano-structure based NO gas sensor.
Kumar, Vivek; Sen, Shashwati; Sharma, M; Muthe, K P; Jagannath; Gaur, N K; Gupta, S K
2009-09-01
Tellurium nanotubes were grown on bare and silver/gold nanoparticle (nucleation centers) deposited silicon substrates by vacuum deposition technique at a substrate temperature of 100 degrees C under high vacuum conditions. Silver and gold nanoparticles prepared on (111) oriented silicon substrates were found to act as nucleation centers for growth of Tellurium nanostructures. Density of nanotubes was found to increase while their diameter reduced when grown using metallic nanoparticle template. These Te nanostructures were investigated for their gas sensitivity. Tellurium nanotubes on Ag templates showed better response to NO in comparison to H2S and NH3 gases. Selectivity in response to NO was improved in comparison to Te thin film sensors reported earlier. The gas sensing mechanism was investigated using Raman and X-ray photoelectron spectroscopy techniques. The interaction of NO is seen to yield increased adsorption of oxygen that in turn increases hole density and conductivity in the material.
Nanophotonic integrated circuits from nanoresonators grown on silicon.
Chen, Roger; Ng, Kar Wei; Ko, Wai Son; Parekh, Devang; Lu, Fanglu; Tran, Thai-Truong D; Li, Kun; Chang-Hasnain, Connie
2014-07-07
Harnessing light with photonic circuits promises to catalyse powerful new technologies much like electronic circuits have in the past. Analogous to Moore's law, complexity and functionality of photonic integrated circuits depend on device size and performance scale. Semiconductor nanostructures offer an attractive approach to miniaturize photonics. However, shrinking photonics has come at great cost to performance, and assembling such devices into functional photonic circuits has remained an unfulfilled feat. Here we demonstrate an on-chip optical link constructed from InGaAs nanoresonators grown directly on a silicon substrate. Using nanoresonators, we show a complete toolkit of circuit elements including light emitters, photodetectors and a photovoltaic power supply. Devices operate with gigahertz bandwidths while consuming subpicojoule energy per bit, vastly eclipsing performance of prior nanostructure-based optoelectronics. Additionally, electrically driven stimulated emission from an as-grown nanostructure is presented for the first time. These results reveal a roadmap towards future ultradense nanophotonic integrated circuits.
Recycling of silicon: from industrial waste to biocompatible nanoparticles for nanomedicine
NASA Astrophysics Data System (ADS)
Kozlov, N. K.; Natashina, U. A.; Tamarov, K. P.; Gongalsky, M. B.; Solovyev, V. V.; Kudryavtsev, A. A.; Sivakov, V.; Osminkina, L. A.
2017-09-01
The formation of photoluminescent porous silicon (PSi) nanoparticles (NPs) is usually based on an expensive semiconductor grade wafers technology. Here, we report a low-cost method of PSi NPs synthesis from the industrial silicon waste remained after the wafer production. The proposed method is based on metal-assisted wet-chemical etching (MACE) of the silicon surface of cm-sized metallurgical grade silicon stones which leads to a nanostructuring of the surface due to an anisotropic etching, with subsequent ultrasound fracturing in water. The obtained PSi NPs exhibit bright red room temperature photoluminescence (PL) and demonstrate similar microstructure and physical characteristics in comparison with the nanoparticles synthesized from semiconductor grade Si wafers. PSi NPs prepared from metallurgical grade silicon stones, similar to silicon NPs synthesized from high purity silicon wafer, show low toxicity to biological objects that open the possibility of using such type of NPs in nanomedicine.
NASA Astrophysics Data System (ADS)
Badalyan, A. M.; Bakhturova, L. F.; Kaichev, V. V.; Polyakov, O. V.; Pchelyakov, O. P.; Smirnov, G. I.
2011-09-01
A new technique for depositing thin nanostructured layers on semiconductor and insulating substrates that is based on heterogeneous gas-phase synthesis from low-dimensional volatile metal complexes is suggested and tried out. Thin nanostructured copper layers are deposited on silicon and quartz substrates from low-dimensional formate complexes using a combined synthesis-mass transport process. It is found that copper in layers thus deposited is largely in a metal state (Cu0) and has the form of closely packed nanograins with a characteristic structure.
Electron beam induced deposition of silicon nanostructures from a liquid phase precursor.
Liu, Yin; Chen, Xin; Noh, Kyong Wook; Dillon, Shen J
2012-09-28
This work demonstrates electron beam induced deposition of silicon from a SiCl(4) liquid precursor in a transmission electron microscope and a scanning electron microscope. Silicon nanodots of tunable size are reproducibly grown in controlled geometries. The volume of these features increases linearly with deposition time. The results indicate that secondary electrons generated at the substrate surface serve as the primary source of silicon reduction. However, at high current densities the influence of the primary electrons is observed to retard growth. The results demonstrate a new approach to fabricating silicon nanostructures and provide fundamental insights into the mechanism for liquid phase electron beam induced deposition.
Electron beam induced deposition of silicon nanostructures from a liquid phase precursor
NASA Astrophysics Data System (ADS)
Liu, Yin; Chen, Xin; Noh, Kyong Wook; Dillon, Shen J.
2012-09-01
This work demonstrates electron beam induced deposition of silicon from a SiCl4 liquid precursor in a transmission electron microscope and a scanning electron microscope. Silicon nanodots of tunable size are reproducibly grown in controlled geometries. The volume of these features increases linearly with deposition time. The results indicate that secondary electrons generated at the substrate surface serve as the primary source of silicon reduction. However, at high current densities the influence of the primary electrons is observed to retard growth. The results demonstrate a new approach to fabricating silicon nanostructures and provide fundamental insights into the mechanism for liquid phase electron beam induced deposition.
Review Application of Nanostructured Black Silicon
NASA Astrophysics Data System (ADS)
Lv, Jian; Zhang, Ting; Zhang, Peng; Zhao, Yingchun; Li, Shibin
2018-04-01
As a widely used semiconductor material, silicon has been extensively used in many areas, such as photodiode, photodetector, and photovoltaic devices. However, the high surface reflectance and large bandgap of traditional bulk silicon restrict the full use of the spectrum. To solve this problem, many methods have been developed. Among them, the surface nanostructured silicon, namely black silicon, is the most efficient and widely used. Due to its high absorption in the wide range from UV-visible to infrared, black silicon is very attractive for using as sensitive layer of photodiodes, photodetector, solar cells, field emission, luminescence, and other photoelectric devices. Intensive study has been performed to understand the enhanced absorption of black silicon as well as the response extended to infrared spectrum range. In this paper, the application of black silicon is systematically reviewed. The limitations and challenges of black silicon material are also discussed. This article will provide a meaningful introduction to black silicon and its unique properties.
Superhydrophobic surfaces’ influence on streaming current based energy harvester
NASA Astrophysics Data System (ADS)
Fouché, Florent; Dargent, Thomas; Coffinier, Yannick; Treizebré, Anthony; Vlandas, Alexis; Senez, Vincent
2016-11-01
The purpose of this paper is to report the design, fabrication and characterization of silicon-based microfluidic channels with superhydrophobic walls for energy harvesting. We present the fabrication step of silicon based streaming current energy harvester and the nanostructuration of the microchannel walls. We characterize the superhydrophobic properties of the surface in a closed system. Our preliminary results on the electrical characterization of the device show a 43% increase of power harvested with our superhydrophobic surface compared to a planar hydrophobic surface.
Agrawal, Anant; Majdi, Joseph; Clouse, Kathleen A; Stantchev, Tzanko
2018-05-23
Optical biosensors based on scattered-light measurements are being developed for rapid and label-free detection of single virions captured from body fluids. Highly controlled, stable, and non-biohazardous reference materials producing virus-like signals are valuable tools to calibrate, evaluate, and refine the performance of these new optical biosensing methods. To date, spherical polymer nanoparticles have been the only non-biological reference materials employed with scattered-light biosensing techniques. However, pathogens like filoviruses, including the Ebola virus, are far from spherical and their shape strongly affects scattered-light signals. Using electron beam lithography, we fabricated nanostructures resembling individual filamentous virions attached to a biosensing substrate (silicon wafer overlaid with silicon oxide film) and characterized their dimensions with scanning electron and atomic force microscopes. To assess the relevance of these nanostructures, we compared their signals across the visible spectrum to signals recorded from Ebola virus-like particles which exhibit characteristic filamentous morphology. We demonstrate the highly stable nature of our nanostructures and use them to obtain new insights into the relationship between virion dimensions and scattered-light signal.
Silicon-germanium and platinum silicide nanostructures for silicon based photonics
NASA Astrophysics Data System (ADS)
Storozhevykh, M. S.; Dubkov, V. P.; Arapkina, L. V.; Chizh, K. V.; Mironov, S. A.; Chapnin, V. A.; Yuryev, V. A.
2017-05-01
This paper reports a study of two types of silicon based nanostructures prospective for applications in photonics. The first ones are Ge/Si(001) structures forming at room temperature and reconstructing after annealing at 600°C. Germanium, being deposited from a molecular beam at room temperature on the Si(001) surface, forms a thin granular film composed of Ge particles with sizes of a few nanometers. A characteristic feature of these films is that they demonstrate signs of the 2 x 1 structure in their RHEED patterns. After short-term annealing at 600°C under the closed system conditions, the granular films reconstruct to heterostructures consisting of a Ge wetting layer and oval clusters of Ge. A mixed type c(4x2) + p(2x2) reconstruction typical to the low-temperature MBE (Tgr < 600°C) forms on the wetting layer. Long-term annealing of granular films at the same conditions results in formation of c(4x2)-reconstructed wetting layer typical to high-temperature MBE (Tgr < 600°C) and huge clusters of Ge. The other type of the studied nanostructures is based on Pt silicides. This class of materials is one of the friendliest to silicon technology. But as silicide film thickness reaches a few nanometers, low resistivity becomes of primary importance. Pt3Si has the lowest sheet resistance among the Pt silicides. However, the development of a process of thin Pt3Si films formation is a challenging task. This paper describes formation of a thin Pt3Si/Pt2Si structures at room temperature on poly-Si films. Special attention is paid upon formation of poly-Si and amorphous Si films on Si3N4 substrates at low temperatures.
NASA Astrophysics Data System (ADS)
Naddaf, M.; Al-Mariri, A.; Haj-Mhmoud, N.
2017-06-01
Nanostructured layers composed of silver-porous silicon (Ag-PS) have been formed by an electrochemical etching of p-type (1 1 1) silicon substrate in a AgNO3:HF:C2H5OH solution at different etching times (10 min-30 min). Scanning electron microscopy (SEM) and energy-dispersive x-ray spectroscopy (EDS) results reveal that the produced layers consist of Ag dendrites and a silicon-rich porous structure. The nanostructuring nature of the layer has been confirmed by spatial micro-Raman scattering and x-ray diffraction techniques. The Ag dendrites exhibit a surface-enhanced Raman scattering (SERS) spectrum, while the porous structure shows a typical PS Raman spectrum. Upon increasing the etching time, the average size of silicon nanocrystallite in the PS network decreases, while the average size of Ag nanocrystals is slightly affected. In addition, the immobilization of prokaryote Salmonella typhimurium DNA via physical adsorption onto the Ag-PS layer has been performed to demonstrate its efficiency as a platform for detection of biological molecules using SERS.
Fabrication of TiO2 nanostructures on porous silicon for thermoelectric application
NASA Astrophysics Data System (ADS)
Fahrizal, F. N.; Ahmad, M. K.; Ramli, N. M.; Ahmad, N.; Fakhriah, R.; Mohamad, F.; Nafarizal, N.; Soon, C. F.; Ameruddin, A. S.; Faridah, A. B.; Shimomura, M.; Murakami, K.
2017-09-01
Nowadays, technology is moving by leaps and bounds over the last several decades. This has created new opportunities and challenge in the research fields. In this study, the experiment is about to investigate the potential of Titanium Dioxide (TiO2) nanostructures that have been growth onto a layer of porous silicon (pSi) for their thermoelectric application. Basically, it is divided into two parts, which is the preparation of the porous silicon (pSi) substrate by electrochemical-etching process and the growth of the Titanium Dioxide (TiO2) nanostructures by hydrothermal method. This sample have been characterize by Field Emission Scanning Electron Microscopy (FESEM) to visualize the morphology of the TiO2 nanostructures area that formed onto the porous silicon (pSi) substrate. Besides, the sample is also used to visualize their cross-section images under the FESEM microscopy. Next, the sample is characterized by the X-Ray Diffraction (XRD) machine. The XRD machine is used to get the information about the chemical composition, crystallographic structure and physical properties of materials.
DOE Office of Scientific and Technical Information (OSTI.GOV)
Duan, Xiangfeng
2017-11-03
The central goal of this project is to design and synthesize complex multi-hetero-nanostructures and fundamental investigation of their potential as efficient and robust photocatalysts. Specifically, the project aims to develop a nanoscale light-harvesting antenna that can efficiently convert solar photon energy into excited electrons and holes, and integrate such antenna with efficient redox nanocatalysts that can harness the photo-generated carriers for productive electrochemical processes. Focusing on this central goal, we have investigated several potential light-harvesting antennas including: silicon nanowires, nitrogen-doped TiO2 nanowires and the emerging perovskite materials. We also devoted considerable effort in developing electrocatalysts including: hydrogen evolution reaction (HER)more » catalysts, oxygen evolution reaction (OER) catalysts and oxygen reduction reaction catalysts (ORR). In previous annual reports, we have described our effort in the synthesis and photoelectrochemical properties of silicon, TiO2, perovskite-based materials and heterostructures. Here, we focus our discussion on the recent effort in investigating charge transport dynamics in organolead halide perovskites, as well as carbon nanostructure and platinum nanostructure-based electrocatalysts for energy conversion and storage.« less
Hybrid luminescent/magnetic nanostructured porous silicon particles for biomedical applications
NASA Astrophysics Data System (ADS)
Muñoz-Noval, Álvaro; Sánchez-Vaquero, Vanessa; Torres-Costa, Vicente; Gallach, Darío; Ferro-Llanos, Vicente; Javier Serrano, José; Manso-Silván, Miguel; García-Ruiz, Josefa Predestinación; Del Pozo, Francisco; Martín-Palma, Raúl J.
2011-02-01
This work describes a novel process for the fabrication of hybrid nanostructured particles showing intense tunable photoluminescence and a simultaneous ferromagnetic behavior. The fabrication process involves the synthesis of nanostructured porous silicon (NPSi) by chemical anodization of crystalline silicon and subsequent in pore growth of Co nanoparticles by electrochemically-assisted infiltration. Final particles are obtained by subsequent sonication of the Co-infiltrated NPSi layers and conjugation with poly(ethylene glycol) aiming at enhancing their hydrophilic character. These particles respond to magnetic fields, emit light in the visible when excited in the UV range, and internalize into human mesenchymal stem cells with no apoptosis induction. Furthermore, cytotoxicity in in-vitro systems confirms their biocompatibility and the viability of the cells after incorporation of the particles. The hybrid nanostructured particles might represent powerful research tools as cellular trackers or in cellular therapy since they allow combining two or more properties into a single particle.
Hybrid luminescent/magnetic nanostructured porous silicon particles for biomedical applications.
Muñoz-Noval, Alvaro; Sánchez-Vaquero, Vanessa; Torres-Costa, Vicente; Gallach, Darío; Ferro-Llanos, Vicente; Serrano, José Javier; Manso-Silván, Miguel; García-Ruiz, Josefa Predestinación; del Pozo, Francisco; Martín-Palma, Raúl J
2011-02-01
This work describes a novel process for the fabrication of hybrid nanostructured particles showing intense tunable photoluminescence and a simultaneous ferromagnetic behavior. The fabrication process involves the synthesis of nanostructured porous silicon (NPSi) by chemical anodization of crystalline silicon and subsequent in pore growth of Co nanoparticles by electrochemically-assisted infiltration. Final particles are obtained by subsequent sonication of the Co-infiltrated NPSi layers and conjugation with poly(ethylene glycol) aiming at enhancing their hydrophilic character. These particles respond to magnetic fields, emit light in the visible when excited in the UV range, and internalize into human mesenchymal stem cells with no apoptosis induction. Furthermore, cytotoxicity in in-vitro systems confirms their biocompatibility and the viability of the cells after incorporation of the particles. The hybrid nanostructured particles might represent powerful research tools as cellular trackers or in cellular therapy since they allow combining two or more properties into a single particle.
Nanostructured Anti-Reflecting and Water-Repellent Surface Coatings
None
2018-06-13
A nanotechnology-based surface-texturing method developed at Brookhaven Labâs Center for Functional Nanomaterials imparts perfect anti-reflection and robust water-repellency to silicon, glass, and some plastics.
Lee, Sung-Min; Dhar, Purnim; Chen, Huandong; Montenegro, Angelo; Liaw, Lauren; Kang, Dongseok; Gai, Boju; Benderskii, Alexander V; Yoon, Jongseung
2017-04-25
Ultrathin silicon solar cells fabricated by anisotropic wet chemical etching of single-crystalline wafer materials represent an attractive materials platform that could provide many advantages for realizing high-performance, low-cost photovoltaics. However, their intrinsically limited photovoltaic performance arising from insufficient absorption of low-energy photons demands careful design of light management to maximize the efficiency and preserve the cost-effectiveness of solar cells. Herein we present an integrated flexible solar module of ultrathin, nanostructured silicon solar cells capable of simultaneously exploiting spectral upconversion and downshifting in conjunction with multispectral luminescent waveguides and a nanostructured plasmonic reflector to compensate for their weak optical absorption and enhance their performance. The 8 μm-thick silicon solar cells incorporating a hexagonally periodic nanostructured surface relief are surface-embedded in layered multispectral luminescent media containing organic dyes and NaYF 4 :Yb 3+ ,Er 3+ nanocrystals as downshifting and upconverting luminophores, respectively, via printing-enabled deterministic materials assembly. The ultrathin nanostructured silicon microcells in the composite luminescent waveguide exhibit strongly augmented photocurrent (∼40.1 mA/cm 2 ) and energy conversion efficiency (∼12.8%) than devices with only a single type of luminescent species, owing to the synergistic contributions from optical downshifting, plasmonically enhanced upconversion, and waveguided photon flux for optical concentration, where the short-circuit current density increased by ∼13.6 mA/cm 2 compared with microcells in a nonluminescent medium on a plain silver reflector under a confined illumination.
DOE Office of Scientific and Technical Information (OSTI.GOV)
Lee, Sung-Min; Dhar, Purnim; Chen, Huandong
Ultrathin silicon solar cells fabricated by anisotropic wet chemical etching of single-crystalline wafer materials represent an attractive materials platform that could provide many advantages for realizing high-performance, low-cost photovoltaics. However, their intrinsically limited photovoltaic performance arising from insufficient absorption of low-energy photons demands careful design of light management to maximize the efficiency and preserve the cost-effectiveness of solar cells. Herein we present an integrated flexible solar module of ultrathin, nanostructured silicon solar cells capable of simultaneously exploiting spectral upconversion and downshifting in conjunction with multispectral luminescent waveguides and a nanostructured plasmonic reflector to compensate for their weak optical absorption andmore » enhance their performance. The 8 μm-thick silicon solar cells incorporating a hexagonally periodic nanostructured surface relief are surface-embedded in layered multispectral luminescent media containing organic dyes and NaYF4:Yb3+,Er3+ nanocrystals as downshifting and upconverting luminophores, respectively, via printing-enabled deterministic materials assembly. The ultrathin nanostructured silicon microcells in the composite luminescent waveguide exhibit strongly augmented photocurrent (~40.1 mA/cm2) and energy conversion efficiency (~12.8%) than devices with only a single type of luminescent species, owing to the synergistic contributions from optical downshifting, plasmonically enhanced upconversion, and waveguided photon flux for optical concentration, where the short-circuit current density increased by ~13.6 mA/cm2 compared with microcells in a nonluminescent medium on a plain silver reflector under a confined illumination.« less
NASA Astrophysics Data System (ADS)
Kobayashi, Taizo; Shimizu, Kazunori; Kaizuma, Yoshihiro; Konishi, Satoshi
2011-03-01
In this letter, we report a technology for fabricating superhydrophobic/superhydrophilic patterns using a combination of a nanostructure-imprinted perfluoropolymer and nanostructured silicon oxide. In our previous study, we used a combination of hydrophobic and superhydrophilic materials. However, it was difficult to split low-surface-tension liquids such as biological liquids into droplets solely using hydrophobic/hydrophilic patterns. In this study, the contact angle of the hydrophobic region was enhanced from 109.3° to 155.6° by performing nanostructure imprinting on a damage-reduced perfluoropolymer. The developed superhydrophobic/superhydrophilic patterns allowed the splitting of even those media that contained fetal bovine serum into droplets of a desired shape.
DOE Office of Scientific and Technical Information (OSTI.GOV)
Williams, R.; Rubensson, J.E.; Eisebitt, S.
1997-04-01
In recent years silicon nanostructures have gained great interest because of their optical luminescence, which immediately suggests several applications, e.g., in optoelectronic devices. Nanostructures are also investigated because of the fundamental physics involved in the underlying luminescence mechanism, especially attention has been drawn to the influence of the reduced dimensions on the electronic structure. The forming of stable and well-defined nanostructured materials is one goal of cluster physics. For silicon nanostructures this goal has so far not been reached, but various indirect methods have been established, all having the problem of producing less well defined and/or unstable nanostructures. Ion implantationmore » and subsequent annealing is a promising new technique to overcome some of these difficulties. In this experiment the authors investigate the electronic structure of ion-implanted silicon nanoparticles buried in a stabilizing SiO{sub 2} substrate. Soft X-ray emission (SXE) spectroscopy features the appropriate information depth to investigate such buried structures. SXE spectra to a good approximation map the local partial density of occupied states (LPDOS) in broad band materials like Si. The use of monochromatized synchrotron radiation (MSR) allows for selective excitation of silicon atoms in different chemical environments. Thus, the emission from Si atom sites in the buried structure can be separated from contributions from the SiO{sub 2} substrate. In this preliminary study strong size dependent effects are found, and the electronic structure of the ion-implanted nanoparticles is shown to be qualitatively different from porous silicon. The results can be interpreted in terms of quantum confinement and chemical shifts due to neighboring oxygen atoms at the interface to SiO{sub 2}.« less
The structural properties of flower-like ZnO nanostructures on porous silicon
NASA Astrophysics Data System (ADS)
Eswar, Kevin Alvin; Suhaimi, Mohd Husairi Fadzillah; Guliling, Muliyadi; Mohamad, Maryam; Khusaimi, Zuraida; Rusop, M.; Abdullah, Saifollah
2018-05-01
The flower-like zinc oxide (ZnO) were successfully synthesized on porous silicon (PSi) via hydrothermal method. The characteristic of ZnO nanostructures was investigated using field emission scanning microscopy (FESEM) and X-ray diffraction (X-Ray). The FESEM images show the flower-like ZnO nanostructures composed ZnO nanoparticles. The X-ray diffraction shows that strong intensity of (100), (002) and (101) peaks. The structural analysis revealed that the peaks angles were shifted due to the stress or imperfection of the crystalline of ZnO nanostructures. The crystalline sizes in range of 42.60 to 54.09 nm were produced.
Zhang, Xinghao; Qiu, Xiongying; Kong, Debin; Zhou, Lu; Li, Zihao; Li, Xianglong; Zhi, Linjie
2017-07-25
Nanostructuring is a transformative way to improve the structure stability of high capacity silicon for lithium batteries. Yet, the interface instability issue remains and even propagates in the existing nanostructured silicon building blocks. Here we demonstrate an intrinsically dual stabilized silicon building block, namely silicene flowers, to simultaneously address the structure and interface stability issues. These original Si building blocks as lithium battery anodes exhibit extraordinary combined performance including high gravimetric capacity (2000 mAh g -1 at 800 mA g -1 ), high volumetric capacity (1799 mAh cm -3 ), remarkable rate capability (950 mAh g -1 at 8 A g -1 ), and excellent cycling stability (1100 mA h g -1 at 2000 mA g -1 over 600 cycles). Paired with a conventional cathode, the fabricated full cells deliver extraordinarily high specific energy and energy density (543 Wh kg ca -1 and 1257 Wh L ca -1 , respectively) based on the cathode and anode, which are 152% and 239% of their commercial counterparts using graphite anodes. Coupled with a simple, cost-effective, scalable synthesis approach, this silicon building block offers a horizon for the development of high-performance batteries.
Tsao, Chia-Wen; Yang, Zhi-Jie
2015-10-14
Desorption/ionization on silicon (DIOS) is a high-performance matrix-free mass spectrometry (MS) analysis method that involves using silicon nanostructures as a matrix for MS desorption/ionization. In this study, gold nanoparticles grafted onto a nanostructured silicon (AuNPs-nSi) surface were demonstrated as a DIOS-MS analysis approach with high sensitivity and high detection specificity for glucose detection. A glucose sample deposited on the AuNPs-nSi surface was directly catalyzed to negatively charged gluconic acid molecules on a single AuNPs-nSi chip for MS analysis. The AuNPs-nSi surface was fabricated using two electroless deposition steps and one electroless etching step. The effects of the electroless fabrication parameters on the glucose detection efficiency were evaluated. Practical application of AuNPs-nSi MS glucose analysis in urine samples was also demonstrated in this study.
NASA Astrophysics Data System (ADS)
Naddaf, M.
2017-01-01
Matrices of copper oxide-porous silicon nanostructures have been formed by electrochemical etching of copper-coated silicon surfaces in HF-based solution at different etching times (5-15 min). Micro-Raman, X-ray diffraction and X-ray photoelectron spectroscopy results show that the nature of copper oxide in the matrix changes from single-phase copper (I) oxide (Cu2O) to single-phase copper (II) oxide (CuO) on increasing the etching time. This is accompanied with important variation in the content of carbon, carbon hydrides, carbonyl compounds and silicon oxide in the matrix. The matrix formed at the low etching time (5 min) exhibits a single broad "blue" room-temperature photoluminescence (PL) band. On increasing the etching time, the intensity of this band decreases and a much stronger "red" PL band emerges in the PL spectra. The relative intensity of this band with respect to the "blue" band significantly increases on increasing the etching time. The "blue" and "red" PL bands are attributed to Cu2O and porous silicon of the matrix, respectively. In addition, the water contact angle measurements reveal that the hydrophobicity of the matrix surface can be tuned from hydrophobic to superhydrophobic state by controlling the etching time.
DOE Office of Scientific and Technical Information (OSTI.GOV)
Li, Ming; Kang, Zhan, E-mail: zhankang@dlut.edu.cn; Huang, Xiaobo
2015-08-28
Hydrogen is clean, sustainable, and renewable, thus is viewed as promising energy carrier. However, its industrial utilization is greatly hampered by the lack of effective hydrogen storage and release method. Carbon nanotubes (CNTs) were viewed as one of the potential hydrogen containers, but it has been proved that pure CNTs cannot attain the desired target capacity of hydrogen storage. In this paper, we present a numerical study on the material-driven and structure-driven hydrogen adsorption of 3D silicon networks and propose a deformation-driven hydrogen desorption approach based on molecular simulations. Two types of 3D nanostructures, silicon nanotube-network (Si-NN) and silicon film-networkmore » (Si-FN), are first investigated in terms of hydrogen adsorption and desorption capacity with grand canonical Monte Carlo simulations. It is revealed that the hydrogen storage capacity is determined by the lithium doping ratio and geometrical parameters, and the maximum hydrogen uptake can be achieved by a 3D nanostructure with optimal configuration and doping ratio obtained through design optimization technique. For hydrogen desorption, a mechanical-deformation-driven-hydrogen-release approach is proposed. Compared with temperature/pressure change-induced hydrogen desorption method, the proposed approach is so effective that nearly complete hydrogen desorption can be achieved by Si-FN nanostructures under sufficient compression but without structural failure observed. The approach is also reversible since the mechanical deformation in Si-FN nanostructures can be elastically recovered, which suggests a good reusability. This study may shed light on the mechanism of hydrogen adsorption and desorption and thus provide useful guidance toward engineering design of microstructural hydrogen (or other gas) adsorption materials.« less
NASA Astrophysics Data System (ADS)
Li, Ming; Huang, Xiaobo; Kang, Zhan
2015-08-01
Hydrogen is clean, sustainable, and renewable, thus is viewed as promising energy carrier. However, its industrial utilization is greatly hampered by the lack of effective hydrogen storage and release method. Carbon nanotubes (CNTs) were viewed as one of the potential hydrogen containers, but it has been proved that pure CNTs cannot attain the desired target capacity of hydrogen storage. In this paper, we present a numerical study on the material-driven and structure-driven hydrogen adsorption of 3D silicon networks and propose a deformation-driven hydrogen desorption approach based on molecular simulations. Two types of 3D nanostructures, silicon nanotube-network (Si-NN) and silicon film-network (Si-FN), are first investigated in terms of hydrogen adsorption and desorption capacity with grand canonical Monte Carlo simulations. It is revealed that the hydrogen storage capacity is determined by the lithium doping ratio and geometrical parameters, and the maximum hydrogen uptake can be achieved by a 3D nanostructure with optimal configuration and doping ratio obtained through design optimization technique. For hydrogen desorption, a mechanical-deformation-driven-hydrogen-release approach is proposed. Compared with temperature/pressure change-induced hydrogen desorption method, the proposed approach is so effective that nearly complete hydrogen desorption can be achieved by Si-FN nanostructures under sufficient compression but without structural failure observed. The approach is also reversible since the mechanical deformation in Si-FN nanostructures can be elastically recovered, which suggests a good reusability. This study may shed light on the mechanism of hydrogen adsorption and desorption and thus provide useful guidance toward engineering design of microstructural hydrogen (or other gas) adsorption materials.
Progress in nanostructured photoanodes for dye-sensitized solar cells
NASA Astrophysics Data System (ADS)
Liu, Xueyang; Fang, Jian; Liu, Yong; Lin, Tong
2016-09-01
Solar cells represent a principal energy technology to convert light into electricity. Commercial solar cells are at present predominately produced by single- or multi-crystalline silicon wafers. The main drawback to silicon-based solar cells, however, is high material and manufacturing costs. Dye-sensitized solar cells (DSSCs) have attracted much attention during recent years because of the low production cost and other advantages. The photoanode (working electrode) plays a key role in determining the performance of DSSCs. In particular, nanostructured photoanodes with a large surface area, high electron transfer efficiency, and low electron recombination facilitate to prepare DSSCs with high energy conversion efficiency. In this review article, we summarize recent progress in the development of novel photoanodes for DSSCs. Effect of semiconductor material (e.g. TiO2, ZnO, SnO2, N2O5, and nano carbon), preparation, morphology and structure (e.g. nanoparticles, nanorods, nanofibers, nanotubes, fiber/particle composites, and hierarchical structure) on photovoltaic performance of DSSCs is described. The possibility of replacing silicon-based solar cells with DSSCs is discussed.
Coralloid-like Nanostructured c-nSi/SiOx@Cy Anodes for High Performance Lithium Ion Battery.
Zhuang, Xianhuan; Song, Pingan; Chen, Guorong; Shi, Liyi; Wu, Yuan; Tao, Xinyong; Liu, Hongjiang; Zhang, Dengsong
2017-08-30
Balancing the size of the primary Si unit and void space is considered to be an effective approach for developing high performance silicon-based anode materials and is vital to create a lithium ion battery with high energy density. We herein have demonstrated the facile fabrication of coralloid-like nanostructured silicon composites (c-nSi/SiO x @Cy) via sulfuric acid etching the Al 60 Si 40 alloy, followed by a surface growth carbon layer approach. The HRTEM images of pristine and cycled c-nSi/SiO x @Cy show that abundant nanoscale internal pores and the continuous conductive carbon layer effectively avoid the pulverization and agglomeration of Si units during multiple cycles. It is interesting that the c-nSi/SiO x @C 4.0 anode exhibits a high initial Coulombic efficiency of 85.53%, and typical specific capacity of over 850 mAh g -1 after deep 500 cycles at a current density of 1 A g -1 . This work offers a facile strategy to create silicon-based anodes consisting of highly dispersed primary nano-Si units.
Selective hierarchical patterning of silicon nanostructures via soft nanostencil lithography
NASA Astrophysics Data System (ADS)
Du, Ke; Ding, Junjun; Wathuthanthri, Ishan; Choi, Chang-Hwan
2017-11-01
It is challenging to hierarchically pattern high-aspect-ratio nanostructures on microstructures using conventional lithographic techniques, where photoresist (PR) film is not able to uniformly cover on the microstructures as the aspect ratio increases. Such non-uniformity causes poor definition of nanopatterns over the microstructures. Nanostencil lithography can provide an alternative means to hierarchically construct nanostructures on microstructures via direct deposition or plasma etching through a free-standing nanoporous membrane. In this work, we demonstrate the multiscale hierarchical fabrication of high-aspect-ratio nanostructures on microstructures of silicon using a free-standing nanostencil, which is a nanoporous membrane consisting of metal (Cr), PR, and anti-reflective coating. The nanostencil membrane is used as a deposition mask to define Cr nanodot patterns on the predefined silicon microstructures. Then, deep reactive ion etching is used to hierarchically create nanostructures on the microstructures using the Cr nanodots as an etch mask. With simple modification of the main fabrication processes, high-aspect-ratio nanopillars are selectively defined only on top of the microstructures, on bottom, or on both top and bottom.
Broadband angle-independent antireflection coatings on nanostructured light trapping solar cells
NASA Astrophysics Data System (ADS)
Vázquez-Guardado, Abraham; Boroumand, Javaneh; Franklin, Daniel; Chanda, Debashis
2018-03-01
Backscattering from nanostructured surfaces greatly diminishes the efficacy of light trapping solar cells. While the analytical design of broadband, angle-independent antireflection coatings on nanostructured surfaces proved inefficient, numerical optimization proves a viable alternative. Here, we numerically design and experimentally verify the performance of single and bilayer antireflection coatings on a 2D hexagonal diffractive light trapping pattern on crystalline silicon substrates. Three well-known antireflection coatings, aluminum oxide, silicon nitride, and silicon oxide, which also double as high-quality surface passivation materials, are studied in the 400-1000 nm band. By varying thickness and conformity, the optimal parameters that minimize the broadband total reflectance (specular and scattering) from the nanostructured surface are obtained. The design results in a single-layer antireflection coating with normal-angle wavelength-integrated reflectance below 4% and a bilayer antireflection coating demonstrating reflection down to 1.5%. We show experimentally an angle-averaged reflectance of ˜5.2 % up to 60° incident angle from the optimized bilayer antireflection-coated nanostructured surface, paving the path toward practical implementation of the light trapping solar cells.
Selective hierarchical patterning of silicon nanostructures via soft nanostencil lithography.
Du, Ke; Ding, Junjun; Wathuthanthri, Ishan; Choi, Chang-Hwan
2017-11-17
It is challenging to hierarchically pattern high-aspect-ratio nanostructures on microstructures using conventional lithographic techniques, where photoresist (PR) film is not able to uniformly cover on the microstructures as the aspect ratio increases. Such non-uniformity causes poor definition of nanopatterns over the microstructures. Nanostencil lithography can provide an alternative means to hierarchically construct nanostructures on microstructures via direct deposition or plasma etching through a free-standing nanoporous membrane. In this work, we demonstrate the multiscale hierarchical fabrication of high-aspect-ratio nanostructures on microstructures of silicon using a free-standing nanostencil, which is a nanoporous membrane consisting of metal (Cr), PR, and anti-reflective coating. The nanostencil membrane is used as a deposition mask to define Cr nanodot patterns on the predefined silicon microstructures. Then, deep reactive ion etching is used to hierarchically create nanostructures on the microstructures using the Cr nanodots as an etch mask. With simple modification of the main fabrication processes, high-aspect-ratio nanopillars are selectively defined only on top of the microstructures, on bottom, or on both top and bottom.
All-Dielectric Colored Metasurfaces with Silicon Mie Resonators.
Proust, Julien; Bedu, Frédéric; Gallas, Bruno; Ozerov, Igor; Bonod, Nicolas
2016-08-23
The photonic resonances hosted by nanostructures provide vivid colors that can be used as color filters instead of organic colors and pigments in photodetectors and printing technology. Metallic nanostructures have been widely studied due to their ability to sustain surface plasmons that resonantly interact with light. Most of the metallic nanoparticles behave as point-like electric multipoles. However, the needs of an another degree of freedom to tune the color of the photonic nanostructure together with the use of a reliable and cost-effective material are growing. Here, we report a technique to imprint colored images based on silicon nanoparticles that host low-order electric and magnetic Mie resonances. The interplay between the electric and magnetic resonances leads to a large palette of colors. This all-dielectric fabrication technique offers the advantage to use cost-effective, reliable, and sustainable materials to provide vivid color spanning the whole visible spectrum. The interest and potential of this all-dielectric printing technique are highlighted by reproducing at a micrometer scale a Mondrian painting.
Nanofabrication on monocrystalline silicon through friction-induced selective etching of Si3N4 mask
2014-01-01
A new fabrication method is proposed to produce nanostructures on monocrystalline silicon based on the friction-induced selective etching of its Si3N4 mask. With low-pressure chemical vapor deposition (LPCVD) Si3N4 film as etching mask on Si(100) surface, the fabrication can be realized by nanoscratching on the Si3N4 mask and post-etching in hydrofluoric acid (HF) and potassium hydroxide (KOH) solution in sequence. Scanning Auger nanoprobe analysis indicated that the HF solution could selectively etch the scratched Si3N4 mask and then provide the gap for post-etching of silicon substrate in KOH solution. Experimental results suggested that the fabrication depth increased with the increase of the scratching load or KOH etching period. Because of the excellent masking ability of the Si3N4 film, the maximum fabrication depth of nanostructure on silicon can reach several microns. Compared to the traditional friction-induced selective etching technique, the present method can fabricate structures with lesser damage and deeper depths. Since the proposed method has been demonstrated to be a less destructive and flexible way to fabricate a large-area texture structure, it will provide new opportunities for Si-based nanofabrication. PMID:24940174
Core-shell chromium silicide-silicon nanopillars: a contact material for future nanosystems.
Chang, Mu-Tung; Chen, Chih-Yen; Chou, Li-Jen; Chen, Lih-Juann
2009-11-24
Chromium silicide nanostructures are fabricated inside silicon nanopillars grown by the vapor-liquid-solid mechanism. The remarkable field-emission behavior of these nanostructures results from extensive improvement of carrier transport due to the reduced energy barrier between the metal and semiconductor layers. The results warrant consideration of chromium silicide as a potentially important contact material in future nanosystems.
Khataee, Alireza; Bayat, Golchehreh; Azamat, Jafar
2017-01-01
Salt rejection phenomenon was investigated using armchair silicon carbide (SiC) nanotubes under applied electric fields. The systems included the (7,7) and (8,8) SiC nanotubes surrounded by silicon nitride membrane immersed in a 0.4mol/L aqueous solution of sodium chloride. Results of molecular dynamics (MD) simulations for selective separation of Na + and Cl - ions showed that the (7,7) SiC nanotube is suitable for separation of cations and the (8,8) SiC nanotube can be used for separating anions. The water desalination by SiC nanotubes was demonstrated by potential of mean force for Na + and Cl - ions in each SiC nanotube. Furthermore, the ionic current, ion residence time, and the radial distribution functions of species were measured to evaluate the properties of the system. Based on the results of this research, the studied SiC nanotubes can be recommended as a nanostructure model for water desalination. Copyright © 2016 Elsevier Inc. All rights reserved.
A new approach for two-terminal electronic memory devices - Storing information on silicon nanowires
NASA Astrophysics Data System (ADS)
Saranti, Konstantina; Alotaibi, Sultan; Paul, Shashi
2016-06-01
The work described in this paper focuses on the utilisation of silicon nanowires as the information storage element in flash-type memory devices. Silicon nanostructures have attracted attention due to interesting electrical and optical properties, and their potential integration into electronic devices. A detailed investigation of the suitability of silicon nanowires as the charge storage medium in two-terminal non-volatile memory devices are presented in this report. The deposition of the silicon nanostructures was carried out at low temperatures (less than 400 °C) using a previously developed a novel method within our research group. Two-terminal non-volatile (2TNV) memory devices and metal-insulator-semiconductor (MIS) structures containing the silicon nanowires were fabricated and an in-depth study of their characteristics was carried out using current-voltage and capacitance techniques.
Nanotubes, nanobelts, nanowires, and nanorods of silicon carbide from the wheat husks
DOE Office of Scientific and Technical Information (OSTI.GOV)
Qadri, S. B.; Rath, B. B.; Gorzkowski, E. P.
2015-09-14
Nanotubes, nanowires, nanobelts, and nanorods of SiC were synthesized from the thermal treatment of wheat husks at temperatures in excess of 1450 °C. From the analysis based on x-ray diffraction, Raman spectroscopy, scanning electron microscopy, and transmission electron microscopy, it has been found that the processed samples of wheat husk consisted of 2H and 3C polytypes of SiC exhibiting the nanostructure shapes. These nanostructures of silicon carbide formed from wheat husks are of technological importance for designing advance composites, applications in biotechnology, and electro-optics. The thermodynamics of the formation of SiC is discussed in terms of the rapid solid state reactionmore » between hydrocarbons and silica on the molecular scale, which is inherently present in the wheat husks.« less
Nanotubes, nanobelts, nanowires, and nanorods of silicon carbide from the wheat husks
NASA Astrophysics Data System (ADS)
Qadri, S. B.; Rath, B. B.; Gorzkowski, E. P.; Feng, J.; Qadri, S. N.; Caldwell, J. D.
2015-09-01
Nanotubes, nanowires, nanobelts, and nanorods of SiC were synthesized from the thermal treatment of wheat husks at temperatures in excess of 1450 °C. From the analysis based on x-ray diffraction, Raman spectroscopy, scanning electron microscopy, and transmission electron microscopy, it has been found that the processed samples of wheat husk consisted of 2H and 3C polytypes of SiC exhibiting the nanostructure shapes. These nanostructures of silicon carbide formed from wheat husks are of technological importance for designing advance composites, applications in biotechnology, and electro-optics. The thermodynamics of the formation of SiC is discussed in terms of the rapid solid state reaction between hydrocarbons and silica on the molecular scale, which is inherently present in the wheat husks.
Gole, James L; Ozdemir, Serdar
2010-08-23
A concept, complementary to that of hard and soft acid-base interactions (HSAB-dominant chemisorption) and consistent with dominant physisorption to a semiconductor interface, is presented. We create a matrix of sensitivities and interactions with several basic gases. The concept, based on the reversible interaction of hard-acid surfaces with soft bases, hard-base surfaces with soft acids, or vice versa, corresponds 1) to the inverse of the HSAB concept and 2) to the selection of a combination of semiconductor interface and analyte materials, which can be used to direct a physisorbed vs chemisorbed interaction. The technology, implemented on nanopore coated porous silicon micropores, results in the coupling of acid-base chemistry with the depletion or enhancement of majority carriers in an extrinsic semiconductor. Using the inverse-HSAB (IHSAB) concept, significant and predictable changes in interface sensitivity for a variety of gases can be implemented. Nanostructured metal oxide particle depositions provide selectivity and complement a highly efficient electrical contact to a porous silicon nanopore covered microporous interface. The application of small quantities (much less than a monolayer) of nanostructured metals, metal oxides, and catalysts which focus the physisorbtive and chemisorbtive interactions of the interface, can be made to create a range of notably higher sensitivities for reversible physisorption. This is exemplified by an approach to reversible, sensitive, and selective interface responses. Nanostructured metal oxides developed from electroless gold (Au(x)O), tin (SnO(2)), copper (Cu(x)O), and nickel (NiO) depositions, nanoalumina, and nanotitania are used to demonstrate the IHSAB concept and provide for the detection of gases, including NH(3), PH(3), CO, NO, and H(2)S, in an array-based format to the sub-ppm level.
DOE Office of Scientific and Technical Information (OSTI.GOV)
Gadomsky, O. N., E-mail: gadomsky@mail.ru; Gadomskaya, I. V.
2015-02-15
We have derived formulas for the amplitudes of light reflection and refraction at an inhomogeneous interface between two media and in a nanostructured layer with a quasi-zero refractive index. These formulas are applied to explain the experimental spectra of nonspecular light reflection using a nanostructured (PMMA + Ag) layer with silver nanoparticles on a silicon surface as an example. We show that a surface wave is formed in the nanostructured layer at various angles of light incidence and the layer with a quasi-zero refractive index is an antireflection coating that provides uniform 5% silicon antireflection in the wavelength range frommore » 450 to 1000 nm.« less
Progress in the Development of SERS-Active Substrates Based on Metal-Coated Porous Silicon
Girel, Kseniya V.; Panarin, Andrei; Terekhov, Sergei N.
2018-01-01
The present work gives an overview of the developments in surface-enhanced Raman scattering (SERS) with metal-coated porous silicon used as an active substrate. We focused this review on the research referenced to SERS-active materials based on porous silicon, beginning from the patent application in 2002 and enclosing the studies of this year. Porous silicon and metal deposition technologies are discussed. Since the earliest studies, a number of fundamentally different plasmonic nanostructures including metallic dendrites, quasi-ordered arrays of metallic nanoparticles (NPs), and metallic nanovoids have been grown on porous silicon, defined by the morphology of this host material. SERS-active substrates based on porous silicon have been found to combine a high and well-reproducible signal level, storage stability, cost-effective technology and handy use. They make it possible to identify and study many compounds including biomolecules with a detection limit varying from milli- to femtomolar concentrations. The progress reviewed here demonstrates the great prospects for the extensive use of the metal-coated porous silicon for bioanalysis by SERS-spectroscopy. PMID:29883382
Progress in the Development of SERS-Active Substrates Based on Metal-Coated Porous Silicon.
Bandarenka, Hanna V; Girel, Kseniya V; Zavatski, Sergey A; Panarin, Andrei; Terekhov, Sergei N
2018-05-21
The present work gives an overview of the developments in surface-enhanced Raman scattering (SERS) with metal-coated porous silicon used as an active substrate. We focused this review on the research referenced to SERS-active materials based on porous silicon, beginning from the patent application in 2002 and enclosing the studies of this year. Porous silicon and metal deposition technologies are discussed. Since the earliest studies, a number of fundamentally different plasmonic nanostructures including metallic dendrites, quasi-ordered arrays of metallic nanoparticles (NPs), and metallic nanovoids have been grown on porous silicon, defined by the morphology of this host material. SERS-active substrates based on porous silicon have been found to combine a high and well-reproducible signal level, storage stability, cost-effective technology and handy use. They make it possible to identify and study many compounds including biomolecules with a detection limit varying from milli- to femtomolar concentrations. The progress reviewed here demonstrates the great prospects for the extensive use of the metal-coated porous silicon for bioanalysis by SERS-spectroscopy.
Ultracompact high-efficiency polarising beam splitter based on silicon nanobrick arrays.
Zheng, Guoxing; Liu, Guogen; Kenney, Mitchell Guy; Li, Zile; He, Ping'an; Li, Song; Ren, Zhi; Deng, Qiling
2016-03-21
Since the transmission of anisotropic nano-structures is sensitive to the polarisation of an incident beam, a novel polarising beam splitter (PBS) based on silicon nanobrick arrays is proposed. With careful design of such structures, an incident beam with polarisation direction aligned with the long axis of the nanobrick is almost totally reflected (~98.5%), whilst that along the short axis is nearly totally transmitted (~94.3%). More importantly, by simply changing the width of the nanobrick we can shift the peak response wavelength from 1460 nm to 1625 nm, covering S, C and L bands of the fiber telecommunications windows. The silicon nanobrick-based PBS can find applications in many fields which require ultracompactness, high efficiency, and compatibility with semiconductor industry technologies.
Efficient Second-Harmonic Generation in Nanocrystalline Silicon Nanoparticles.
Makarov, Sergey V; Petrov, Mihail I; Zywietz, Urs; Milichko, Valentin; Zuev, Dmitry; Lopanitsyna, Natalia; Kuksin, Alexey; Mukhin, Ivan; Zograf, George; Ubyivovk, Evgeniy; Smirnova, Daria A; Starikov, Sergey; Chichkov, Boris N; Kivshar, Yuri S
2017-05-10
Recent trends to employ high-index dielectric particles in nanophotonics are motivated by their reduced dissipative losses and large resonant enhancement of nonlinear effects at the nanoscale. Because silicon is a centrosymmetric material, the studies of nonlinear optical properties of silicon nanoparticles have been targeting primarily the third-harmonic generation effects. Here we demonstrate, both experimentally and theoretically, that resonantly excited nanocrystalline silicon nanoparticles fabricated by an optimized laser printing technique can exhibit strong second-harmonic generation (SHG) effects. We attribute an unexpectedly high yield of the nonlinear conversion to a nanocrystalline structure of nanoparticles supporting the Mie resonances. The demonstrated efficient SHG at green light from a single silicon nanoparticle is 2 orders of magnitude higher than that from unstructured silicon films. This efficiency is significantly higher than that of many plasmonic nanostructures and small silicon nanoparticles in the visible range, and it can be useful for a design of nonlinear nanoantennas and silicon-based integrated light sources.
Ballistic Spin Field Effect Transistor Based on Silicon Nanowires
NASA Astrophysics Data System (ADS)
Osintsev, Dmitri; Sverdlov, Viktor; Stanojevic, Zlatan; Selberherr, Siegfried
2011-03-01
We investigate the properties of ballistic spin field-effect transistors build on silicon nanowires. An accurate description of the conduction band based on the k . p} model is necessary in thin and narrow silicon nanostructures. The subband effective mass and subband splitting dependence on the nanowire dimensions is analyzed and used in the transport calculations. The spin transistor is formed by sandwiching the nanowire between two ferromagnetic metallic contacts. Delta-function barriers at the interfaces between the contacts and the silicon channel are introduced. The major contribution to the electric field-dependent spin-orbit interaction in confined silicon systems is due to the interface-induced inversion asymmetry which is of the Dresselhaus type. We study the current and conductance through the system for the contacts being in parallel and anti-parallel configurations. Differences between the [100] and [110] orientated structures are investigated in details. This work is supported by the European Research Council through the grant #247056 MOSILSPIN.
Titanium-Catalyzed Silicon Nanostructures Grown by APCVD
NASA Astrophysics Data System (ADS)
Usman, Mohammad A. U.; Smith, Brady J.; Jackson, Justin B.; De Long, Matthew C.; Miller, Mark S.
2015-01-01
We report on growth of Ti-catalyzed silicon nanostructures (SNCs) through atmospheric-pressure chemical vapor deposition. An extensive growth study relating the growth condition parameters, including the partial pressure of SiCl4 gas, reaction temperature, and reaction time, was carried out to obtain insight into the growth regimes for the observed SNCs. Based on phase diagram analysis of Ti-Si alloy and growth rate analysis of the silicon nanowires (SNWs) and silicon nanoplatelets, we believe the growth mechanism to be strongly dependent on the thermodynamics of the system, exhibiting a delicate balance that can easily tip between the growth and etching regimes of the system. Three types of SNCs were observed frequently throughout the study: nanowires, nanoplatelets, and balls. Regimes for highly etched growth were also noted through growth conditions plots. Ti-catalyzed SNWs grown using SiCl4 gas strongly suggest growth occurring through a type of vapor-solid-solid (VSS) mechanism that is limited by diffusion through the solid-catalyst interface. On the other hand, the two-dimensional SNP morphologies suggest growth occurring through the twin-plane mechanism at the edges, at 10 nm to 100 nm scales, also through a similar, VSS mechanism.
NASA Astrophysics Data System (ADS)
Hooshyar, Ali; Kokabi, Mehrdad
2018-01-01
One-dimensional silicon carbide (1D SiC) nanostructure has shown unusual properties such as extremely high strength, good flexibility, fracture toughness, wide band gap ( 3.2eV), large breakdown electric field strength (>2 MV cm-1, 10 times that of silicon), and inverse Hall-Petch effect. Because of these advantages, 1D SiC nanomaterial has gained extensive attention on the wide range of applications in microelectronics, optoelectronics, nanocomposites, and catalyst supports. Many methods have been used for the synthesis of 1D SiC nanostructures such as chemical vapor deposition, carbon nanotube-confined reaction, laser ablation, high-frequency induction heating, and arc discharge. However, these methods have also some shortcomings such as using catalyst, high-cost, low yield, irregular geometry and impurity. In this work, electrospinning was used to prepare aligned PVA/SiO2 composite nanofibers and the effect of fiber alignment on the production efficiency and quality of 1D SiC nanostructure was investigated. For this purpose, aligned electrospun nanofibers, as the desirable precursor, were put in a tube furnace and heated up to 1250°C under a controlled program in an inert atmosphere. Finally, the grown 1D SiC nanostructure product was characterized using SEM, XRD, and FTIR. The results confirmed the successful synthesis of pure crystalline1D β-SiC nanostructure with high yield, more regular, and metal catalyst-free.
Thermal transport in suspended silicon membranes measured by laser-induced transient gratings
Vega-Flick, A.; Duncan, R. A.; Eliason, J. K.; ...
2016-12-05
Studying thermal transport at the nanoscale poses formidable experimental challenges due both to the physics of the measurement process and to the issues of accuracy and reproducibility. The laser-induced transient thermal grating (TTG) technique permits non-contact measurements on nanostructured samples without a need for metal heaters or any other extraneous structures, offering the advantage of inherently high absolute accuracy. We present a review of recent studies of thermal transport in nanoscale silicon membranes using the TTG technique. An overview of the methodology, including an analysis of measurements errors, is followed by a discussion of new findings obtained from measurements onmore » both “solid” and nanopatterned membranes. The most important results have been a direct observation of non-diffusive phonon-mediated transport at room temperature and measurements of thickness-dependent thermal conductivity of suspended membranes across a wide thickness range, showing good agreement with first-principles-based theory assuming diffuse scattering at the boundaries. Measurements on a membrane with a periodic pattern of nanosized holes (135nm) indicated fully diffusive transport and yielded thermal diffusivity values in agreement with Monte Carlo simulations. Based on the results obtained to-date, we conclude that room-temperature thermal transport in membrane-based silicon nanostructures is now reasonably well understood.« less
Park, Haesung; Shin, Dongheok; Kang, Gumin; Baek, Seunghwa; Kim, Kyoungsik; Padilla, Willie J
2011-12-22
Based on conventional colloidal nanosphere lithography, we experimentally demonstrate novel graded-index nanostructures for broadband optical antireflection enhancement including the near-ultraviolet (NUV) region by integrating residual polystyrene antireflective (AR) nanoislands coating arrays with silicon nano-conical-frustum arrays. This is a feasible optimized integration method of two major approaches for antireflective surfaces: quarter-wavelength AR coating and biomimetic moth's eye structure. Copyright © 2011 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
DOE Office of Scientific and Technical Information (OSTI.GOV)
Chen, Limiao, E-mail: chenlimiao@csu.edu.cn; Jing, Qifeng; Chen, Jun
Silver nanostructures with dendritic, flower-like and irregular morphologies were controllably deposited on a silicon substrate in an aqueous hydrogen fluoride solution at room temperature. The morphology of the Ag nanostructures changed from dendritic to urchin-like, flowerlike and pinecone-like with increasing the concentration of polyvinyl pyrrolidone (MW = 55,000) from 2 to 10 mM. The Ag nanostructures were characterized by transmission electron microscopy, high-resolution transmission electron microscopy, scanning electron microscopy, energy-dispersive X-ray, and X-ray diffraction. Through a series of time-dependent morphological evolution studies, the growth processes of Ag nanostructures have been systematically investigated and the corresponding growth mechanisms have been discussed.more » In addition, the morphology-dependent surface-enhanced Raman scattering of as-synthesized Ag nanostructures were investigated. The results indicated that flower-like Ag nanostructure had the highest activity than the other Ag nanostructures for Rhodamine 6G probe molecules. Highlights: • A simple method was developed to prepare dendritic and flower-like Ag nanostructures. • The flower-like Ag nanoparticles exhibit highest SERS activity. • The SERS substrate based on flower-like Ag particles can be used to detect melamine.« less
Zhou, D; Xu, T; Lambert, Y; Cristini-Robbe; Stiévenard, D
2015-12-01
The light absorption of polysilicon planar junctions can be improved using nanostructured top surfaces due to their enhanced light harvesting properties. Nevertheless, associated with the higher surface, the roughness caused by plasma etching and defects located at the grain boundary in polysilicon, the concentration of the recombination centers increases, leading to electrical performance deterioration. In this work, we demonstrate that wet oxidation combined with hydrogen passivation using SiN(x):H are the key technological processes to significantly decrease the surface recombination and improve the electrical properties of nanostructured n(+)-i-p junctions. Nanostructured surface is fabricated by nanosphere lithography in a low-cost and controllable approach. Furthermore, it has been demonstrated that the successive annealing of silicon nitride films has significant effect on the passivation quality, resulting in some improvements on the efficiency of the Si nanostructure-based solar cell device.
Gallium arsenide/gold nanostructures deposited using plasma method
DOE Office of Scientific and Technical Information (OSTI.GOV)
Mangla, O.; Physics Department, Hindu College, University of Delhi, Delhi, 110007; Roy, S.
2016-05-23
The fabrication of gallium arsenide (GaAs) nanostructures on gold coated glass, quartz and silicon substrates using the high fluence and highly energetic ions has been reported. The high fluence and highly energetic ions are produced by the hot, dense and extremely non-equilibrium plasma in a modified dense plasma focus device. The nanostructures having mean size about 14 nm, 13 nm and 18 nm are deposited on gold coated glass, quartz and silicon substrates, respectively. The optical properties of nanostructures studied using absorption spectra show surface plasmon resonance peak of gold nanoparticles. In addition, the band-gap of GaAs nanoparticles is more than that ofmore » bulk GaAs suggesting potential applications in the field of optoelectronic and sensor systems.« less
NASA Astrophysics Data System (ADS)
Al-Tameemi, Mohammed N. A.
2018-03-01
In this work, nanostructured silicon dioxide films are deposited by closed-field unbalanced direct-current (DC) reactive magnetron sputtering technique on two sides of quartz cells containing rhodamine B dye dissolved in ethanol with 10‒5 M concentration as a random gain medium. The preparation conditions are optimized to prepare highly pure SiO2 nanostructures with a minimum particle size of about 20 nm. The effect of SiO2 films as external cavity for the random gain medium is determined by the laser-induced fluorescence of this medium, and an increase of about 200% in intensity is observed after the deposition of nanostructured SiO2 thin films on two sides of the dye cell.
Silicon vacancy-related centers in non-irradiated 6H-SiC nanostructure
DOE Office of Scientific and Technical Information (OSTI.GOV)
Bagraev, N. T., E-mail: Impurity.Dipole@mail.ioffe.ru; Danilovskii, E. Yu.; Gets, D. S.
2015-05-15
We present the first findings of the silicon vacancy related centers identified in the non-irradiated 6H-SiC nanostructure using the electron spin resonance (ESR) and electrically-detected (ED) ESR technique. This planar 6H-SiC nanostructure represents the ultra-narrow p-type quantum well confined by the δ-barriers heavily doped with boron on the surface of the n-type 6H-SiC(0001) wafer. The new EDESR technique by measuring the only magnetoresistance of the 6H-SiC nanostructure under the high frequency generation from the δ-barriers appears to allow the identification of the isolated silicon vacancy centers as well as the triplet center with spin state S = 1. The samemore » triplet center that is characterized by the large value of the zero-field splitting constant D and anisotropic g-factor is revealed by the ESR (X-band) method. The hyperfine (HF) lines in the ESR and EDESR spectra originating from the HF interaction with the {sup 14}N nucleus seem to attribute this triplet center to the N-V{sub Si} defect.« less
Graphene synthesized on porous silicon for active electrode material of supercapacitors
NASA Astrophysics Data System (ADS)
Su, B. B.; Chen, X. Y.; Halvorsen, E.
2016-11-01
We present graphene synthesized by chemical vapour deposition under atmospheric pressure on both porous nanostructures and flat wafers as electrode scaffolds for supercapacitors. A 3nm thin gold layer was deposited on samples of both porous and flat silicon for exploring the catalytic influence during graphene synthesis. Micro-four-point probe resistivity measurements revealed that the resistivity of porous silicon samples was nearly 53 times smaller than of the flat silicon ones when all the samples were covered by a thin gold layer after the graphene growth. From cyclic voltammetry, the average specific capacitance of porous silicon coated with gold was estimated to 267 μF/cm2 while that without catalyst layer was 145μF/cm2. We demonstrated that porous silicon based on nanorods can play an important role in graphene synthesis and enable silicon as promising electrodes for supercapacitors.
Reflectance analysis of porosity gradient in nanostructured silicon layers
NASA Astrophysics Data System (ADS)
Jurečka, Stanislav; Imamura, Kentaro; Matsumoto, Taketoshi; Kobayashi, Hikaru
2017-12-01
In this work we study optical properties of nanostructured layers formed on silicon surface. Nanostructured layers on Si are formed in order to reach high suppression of the light reflectance. Low spectral reflectance is important for improvement of the conversion efficiency of solar cells and for other optoelectronic applications. Effective method of forming nanostructured layers with ultralow reflectance in a broad interval of wavelengths is in our approach based on metal assisted etching of Si. Si surface immersed in HF and H2O2 solution is etched in contact with the Pt mesh roller and the structure of the mesh is transferred on the etched surface. During this etching procedure the layer density evolves gradually and the spectral reflectance decreases exponentially with the depth in porous layer. We analyzed properties of the layer porosity by incorporating the porosity gradient into construction of the layer spectral reflectance theoretical model. Analyzed layer is splitted into 20 sublayers in our approach. Complex dielectric function in each sublayer is computed by using Bruggeman effective media theory and the theoretical spectral reflectance of modelled multilayer system is computed by using Abeles matrix formalism. Porosity gradient is extracted from the theoretical reflectance model optimized in comparison to the experimental values. Resulting values of the structure porosity development provide important information for optimization of the technological treatment operations.
Zanganeh, Somayeh; Khosravi, Safoora; Namdar, Naser; Amiri, Morteza Hassanpour; Gharooni, Milad; Abdolahad, Mohammad
2016-09-28
One of the most interested molecular research in the field of cancer detection is the mechanism of drug effect on cancer cells. Translating molecular evidence into electrochemical profiles would open new opportunities in cancer research. In this manner, applying nanostructures with anomalous physical and chemical properties as well as biocompatibility would be a suitable choice for the cell based electrochemical sensing. Silicon based nanostructure are the most interested nanomaterials used in electrochemical biosensors because of their compatibility with electronic fabrication process and well engineering in size and electrical properties. Here we apply silicon nanograss (SiNG) probing electrodes produced by reactive ion etching (RIE) on silicon wafer to electrochemically diagnose the effect of anticancer drugs on breast tumor cells. Paclitaxel (PTX) and mebendazole (MBZ) drugs have been used as polymerizing and depolymerizing agents of microtubules. PTX would perturb the anodic/cathodic responses of the cell-covered biosensor by binding phosphate groups to deformed proteins due to extracellular signal-regulated kinase (ERK(1/2)) pathway. MBZ induces accumulation of Cytochrome C in cytoplasm. Reduction of the mentioned agents in cytosol would change the ionic state of the cells monitored by silicon nanograss working electrodes (SiNGWEs). By extending the contacts with cancer cells, SiNGWEs can detect minor signal transduction and bio recognition events, resulting in precise biosensing. Effects of MBZ and PTX drugs, (with the concentrations of 2 nM and 0.1 nM, respectively) on electrochemical activity of MCF-7 cells are successfully recorded which are corroborated by confocal and flow cytometry assays. Copyright © 2016 Elsevier B.V. All rights reserved.
Nondestructive imaging of atomically thin nanostructures buried in silicon
Gramse, Georg; Kölker, Alexander; Lim, Tingbin; Stock, Taylor J. Z.; Solanki, Hari; Schofield, Steven R.; Brinciotti, Enrico; Aeppli, Gabriel; Kienberger, Ferry; Curson, Neil J.
2017-01-01
It is now possible to create atomically thin regions of dopant atoms in silicon patterned with lateral dimensions ranging from the atomic scale (angstroms) to micrometers. These structures are building blocks of quantum devices for physics research and they are likely also to serve as key components of devices for next-generation classical and quantum information processing. Until now, the characteristics of buried dopant nanostructures could only be inferred from destructive techniques and/or the performance of the final electronic device; this severely limits engineering and manufacture of real-world devices based on atomic-scale lithography. Here, we use scanning microwave microscopy (SMM) to image and electronically characterize three-dimensional phosphorus nanostructures fabricated via scanning tunneling microscope–based lithography. The SMM measurements, which are completely nondestructive and sensitive to as few as 1900 to 4200 densely packed P atoms 4 to 15 nm below a silicon surface, yield electrical and geometric properties in agreement with those obtained from electrical transport and secondary ion mass spectroscopy for unpatterned phosphorus δ layers containing ~1013 P atoms. The imaging resolution was 37 ± 1 nm in lateral and 4 ± 1 nm in vertical directions, both values depending on SMM tip size and depth of dopant layers. In addition, finite element modeling indicates that resolution can be substantially improved using further optimized tips and microwave gradient detection. Our results on three-dimensional dopant structures reveal reduced carrier mobility for shallow dopant layers and suggest that SMM could aid the development of fabrication processes for surface code quantum computers. PMID:28782006
Cerveau, Geneviève; Corriu, Robert J P; Lerouge, Frédéric; Bellec, Nathalie; Lorcy, Dominique; Nobili, Maurizio
2004-02-21
A hybrid organic inorganic nanostructured material containing a TTF core substituted by four arms exhibited a high level of both condensation at silicon (96%) and self-organization as evidenced by X-ray diffraction and an unprecedented birefringent behaviour.
NASA Astrophysics Data System (ADS)
Tsarev, Andrei V.
2007-08-01
A new type of optical waveguides in silicon-on-insulator nanostructures is proposed and studied. Their optical properties are simulated by the beam propagation method and discussed. A new design in the form of heterogeneous waveguide structures is based on the production of additionally heavily doped p+-regions on the sides of a multimode stripe waveguide (the silicon core cross section is ~200 nm × 16 μm). Such doping provides the 'single-mode' behaviour of the heterogeneous waveguide due to the decrease in the optical losses for the fundamental mode and increase in losses for higher-order modes. Single-mode heterogeneous waveguides can be used as base waveguides in photonic and integrated optical elements.
DOE Office of Scientific and Technical Information (OSTI.GOV)
None
2010-03-01
Broad Funding Opportunity Announcement Project: UIUC is experimenting with silicon-based materials to develop flexible thermoelectric devices—which convert heat into energy—that can be mass-produced at low cost. A thermoelectric device, which resembles a computer chip, creates electricity when a different temperature is applied to each of its sides. Existing commercial thermoelectric devices contain the element tellurium, which limits production levels because tellurium has become increasingly rare. UIUC is replacing this material with microscopic silicon wires that are considerably cheaper and could be equally effective. Improvements in thermoelectric device production could return enough wasted heat to add up to 23% to ourmore » current annual electricity production.« less
Flynn, G; Stokes, K; Ryan, K M
2018-05-31
Herein, we report the formation of silicon, germanium and more complex Si-SixGe1-x and Si-Ge axial 1D heterostructures, at low temperatures in solution. These nanorods/nanowires are grown using phenylated compounds of silicon and germanium as reagents, with precursor decomposition achieved at substantially reduced temperatures (200 °C for single crystal nanostructures and 300 °C for heterostructures), through the addition of a reducing agent. This low energy route for the production of these functional nanostructures as a wet chemical in high yield is attractive to meet the processing needs for next generation photovoltaics, batteries and electronics.
NASA Astrophysics Data System (ADS)
Li, Weijun; Zhu, Yaping; Luo, Jun; Peng, Sha; Lei, Yu; Tong, Qing; Zhang, Xinyu; Xie, Changsheng
2015-10-01
Current researches show that the surface plasmon-polariton modes (SPPMs) in metallic nanostructures can lead to a powerful localization of guided light signals, which is generally as small as a few nanometers and thus far beyond the diffraction limit of electromagnetic waves in dielectric media. In this paper, our attention is paid to the modeling and simulation of particular kinds of patterned metal-based nanostructure fabricated over several common wafers such as typical silicon dioxide. The nanostructures are designed for concentrating and delivering incident light energy into nanoscale regions. In our research, the factors, for instance, optical materials, patterned nano-structures, the distance arrangement between adjacent single nanopattern, and the frequency of incident electromagnetic wave, are taken as variables, and further the CST microwave studio is used to simulate optical behaviors of the devices developed by us. By comparing the transmittance and electric field intensity distribution in small area, the nano-light-emission effects are analyzed, and the conditions for obtaining near-field nanospots have been chosen.
DOE Office of Scientific and Technical Information (OSTI.GOV)
Sun, Yuandong; Liu, Kewei; Zhu, Yu
Silicon is regarded as the next generation anode material for LIBs with its ultra-high theoretical capacity and abundance. Nevertheless, the severe capacity degradation resulting from the huge volume change and accumulative solid-electrolyte interphase (SEI) formation hinders the silicon based anode material for further practical applications. Hence, a variety of methods have been applied to enhance electrochemical performances in terms of the electrochemical stability and rate performance of the silicon anodes such as designing nanostructured Si, combining with carbonaceous material, exploring multifunctional polymer binders, and developing artificial SEI layers. Silicon anodes with low-dimensional structures (0D, 1D, and 2D), compared with bulkymore » silicon anodes, are strongly believed to have several advanced characteristics including larger surface area, fast electron transfer, and shortened lithium diffusion pathway as well as better accommodation with volume changes, which leads to improved electrochemical behaviors. Finally, in this review, recent progress of silicon anode synthesis methodologies generating low-dimensional structures for lithium ion batteries (LIBs) applications is listed and discussed.« less
Sun, Yuandong; Liu, Kewei; Zhu, Yu
2017-07-31
Silicon is regarded as the next generation anode material for LIBs with its ultra-high theoretical capacity and abundance. Nevertheless, the severe capacity degradation resulting from the huge volume change and accumulative solid-electrolyte interphase (SEI) formation hinders the silicon based anode material for further practical applications. Hence, a variety of methods have been applied to enhance electrochemical performances in terms of the electrochemical stability and rate performance of the silicon anodes such as designing nanostructured Si, combining with carbonaceous material, exploring multifunctional polymer binders, and developing artificial SEI layers. Silicon anodes with low-dimensional structures (0D, 1D, and 2D), compared with bulkymore » silicon anodes, are strongly believed to have several advanced characteristics including larger surface area, fast electron transfer, and shortened lithium diffusion pathway as well as better accommodation with volume changes, which leads to improved electrochemical behaviors. Finally, in this review, recent progress of silicon anode synthesis methodologies generating low-dimensional structures for lithium ion batteries (LIBs) applications is listed and discussed.« less
Growth and characterization of nanostructured CuO films via CBD approach for oxygen gas sensing
NASA Astrophysics Data System (ADS)
Nurfazliana, M. F.; Sahdan, M. Z.; Saim, H.
2017-01-01
Nanostructured copper oxide (CuO) films were grown on portable IDE circuit silicon-based by low-cost chemical bath deposition (CBD) technique at three different deposition times (3 h, 5 h and 7 h). The effect of deposition times on the morphological, structural, optical and sensing properties of the nanostructured films were investigated. From the morphological and structural properties, the nanostructured film deposited at 5 h was found to have homogenous surface of CuO nanowhiskers and high crystallinity with tenorite phase compared to 3 h and 7 h films. Besides, there is no heat treatment required in order to produce CuO nanostructures film with tenorite phase. The sensing response (resistance changes) of as-synthesized films to concentration of oxygen (O2) gas also was compared. Film resistance of CuO nanostructures was studied in an environment of dry air loaded (gas sensor chamber) with 30 % of O2 gas. The results revealed that the deposition time causes significant effect on the sensing performance of nanostructured CuO to O2 gas.
NASA Astrophysics Data System (ADS)
Hernández, Margarita; Recio, Gonzalo; Sevilla, Paz; Torres-Costa, Vicente; García-Ramos, José V.; Domingo, Concepción; Martín-Palma, Raúl J. J.
2012-10-01
A study of the fluorescence and Raman spectra of a new and complex drug delivery system formed by emodin adsorbed on silver nanoparticles embedded into a matrix of porous silicon is here reported. Several experimental methods of inclusion of the drug-silver set inside the pores, without previous functionalization of porous silicon, have been tested in order to optimize the conditions for the fluorescence detection of emodin. In this sense, we have also added bovine serum albumin to the system, finding that the presence of the protein enhances the fluores-cence signal from emodin.
High Sensitivity, Low Power Nano Sensors and Devices for Chemical Sensing
NASA Technical Reports Server (NTRS)
Li, Jing; Powell, Dan; Getty, Stephanie; Lu, Yi-Jiang
2004-01-01
The chemical sensor market has been projected to grow to better than $40 billion dollars worldwide within the next 10 years. Some of the primary motivations to develop nanostructured chemical sensors are monitoring and control of environmental pollution; improved diagnostics for consumption; improvement in measurement precision and accuracy; and improved detection limits for Homeland security, battlefield environments, and process and quality control of industrial applications. In each of these applications, there is demand for sensitivity, selectivity and stability of environmental and biohazard detection and capture beyond what is currently commercially available. Nanotechnology offers the ability to work at the molecular level, atom by atom, to create large structures with fundamentally new molecular organization. It is essentially concerned with materials, devices, and systems whose structures and components exhibit novel and significantly improved physical, chemical and biological properties, phenomena, and process control due to their nanoscale size. One such nanotechnology-enabled chemical sensor has been developed at NASA Ames leveraging nanostructures, such as single walled carbon nanotubes (SWNTs) and metal oxide nanobelts or nanowires, as a sensing medium bridging a pair of interdigitated electrodes (IDE) realized through a silicon-based microfabrication and micromachining technique. The DE fingers are fabricated on a silicon substrate using standard photolithography and thin film metallization techniques. It is noteworthy that the fabrication techniques employed are not confined to the silicon substrate. Through spin casting and careful substrate selection (i.e. clothing, glass, polymer, etc.), additional degrees of freedom can be exploited to enhance sensitivity or to conform to unique applications. Both in-situ growth of nanostructured materials and casting of nanostructured dispersions were used to produce analogous chemical sensing devices.
New Deformation-Induced Nanostructure in Silicon.
Wang, Bo; Zhang, Zhenyu; Chang, Keke; Cui, Junfeng; Rosenkranz, Andreas; Yu, Jinhong; Lin, Cheng-Te; Chen, Guoxin; Zang, Ketao; Luo, Jun; Jiang, Nan; Guo, Dongming
2018-06-18
Nanostructures in silicon (Si) induced by phase transformations have been investigated during the past 50 years. Performances of nanostructures are improved compared to that of bulk counterparts. Nevertheless, the confinement and loading conditions are insufficient to machine and fabricate high-performance devices. As a consequence, nanostructures fabricated by nanoscale deformation at loading speeds of m/s have not been demonstrated yet. In this study, grinding or scratching at a speed of 40.2 m/s was performed on a custom-made setup by an especially designed diamond tip (calculated stress under the diamond tip in the order of 5.11 GPa). This leads to a novel approach for the fabrication of nanostructures by nanoscale deformation at loading speeds of m/s. A new deformation-induced nanostructure was observed by transmission electron microscopy (TEM), consisting of an amorphous phase, a new tetragonal phase, slip bands, twinning superlattices, and a single crystal. The formation mechanism of the new phase was elucidated by ab initio simulations at shear stress of about 2.16 GPa. This approach opens a new route for the fabrication of nanostructures by nanoscale deformation at speeds of m/s. Our findings provide new insights for potential applications in transistors, integrated circuits, diodes, solar cells, and energy storage systems.
Fabrication of 3D nano-structures using reverse imprint lithography
NASA Astrophysics Data System (ADS)
Han, Kang-Soo; Hong, Sung-Hoon; Kim, Kang-In; Cho, Joong-Yeon; Choi, Kyung-woo; Lee, Heon
2013-02-01
In spite of the fact that the fabrication process of three-dimensional nano-structures is complicated and expensive, it can be applied to a range of devices to increase their efficiency and sensitivity. Simple and inexpensive fabrication of three-dimensional nano-structures is necessary. In this study, reverse imprint lithography (RIL) with UV-curable benzylmethacrylate, methacryloxypropyl terminated poly-dimethylsiloxane (M-PDMS) resin and ZnO-nano-particle-dispersed resin was used to fabricate three-dimensional nano-structures. UV-curable resins were placed between a silicon stamp and a PVA transfer template, followed by a UV curing process. Then, the silicon stamp was detached and a 2D pattern layer was transferred to the substrate using diluted UV-curable glue. Consequently, three-dimensional nano-structures were formed by stacking the two-dimensional nano-patterned layers. RIL was applied to a light-emitting diode (LED) to evaluate the optical effects of a nano-patterned layer. As a result, the light extraction of the patterned LED was increased by about 12% compared to an unpatterned LED.
Fabrication and characterization of active nanostructures
NASA Astrophysics Data System (ADS)
Opondo, Noah F.
Three different nanostructure active devices have been designed, fabricated and characterized. Junctionless transistors based on highly-doped silicon nanowires fabricated using a bottom-up fabrication approach are first discussed. The fabrication avoids the ion implantation step since silicon nanowires are doped in-situ during growth. Germanium junctionless transistors fabricated with a top down approach starting from a germanium on insulator substrate and using a gate stack of high-k dielectrics and GeO2 are also presented. The levels and origin of low-frequency noise in junctionless transistor devices fabricated from silicon nanowires and also from GeOI devices are reported. Low-frequency noise is an indicator of the quality of the material, hence its characterization can reveal the quality and perhaps reliability of fabricated transistors. A novel method based on low-frequency noise measurement to envisage trap density in the semiconductor bandgap near the semiconductor/oxide interface of nanoscale silicon junctionless transistors (JLTs) is presented. Low-frequency noise characterization of JLTs biased in saturation is conducted at different gate biases. The noise spectrum indicates either a Lorentzian or 1/f. A simple analysis of the low-frequency noise data leads to the density of traps and their energy within the semiconductor bandgap. The level of noise in silicon JLT devices is lower than reported values on transistors fabricated using a top-down approach. This noise level can be significantly improved by improving the quality of dielectric and the channel interface. A micro-vacuum electron device based on silicon field emitters for cold cathode emission is also presented. The presented work utilizes vertical Si nanowires fabricated by means of self-assembly, standard lithography and etching techniques as field emitters in this dissertation. To obtain a high nanowire density, hence a high current density, a simple and inexpensive Langmuir Blodgett technique to deposit silica nanoparticles as a mask to etch Si is adopted. Fabrication and characterization of a metal-gated microtriode with a high current density and low operating voltage are presented.
NASA Astrophysics Data System (ADS)
Frizyuk, Kristina; Hasan, Mehedi; Krasnok, Alex; Alú, Andrea; Petrov, Mihail
2018-02-01
Resonantly enhanced Raman scattering in dielectric nanostructures has been recently proven to be an efficient tool for nanothermometry and for the experimental determination of their mode composition. In this paper we develop a rigorous analytical theory based on the Green's function approach to calculate the Raman emission from crystalline high-index dielectric nanoparticles. As an example, we consider silicon nanoparticles which have a strong Raman response due to active optical phonon modes. We relate enhancement of Raman signal emission to the Purcell effect due to the excitation of Mie modes inside the nanoparticles. We also employ our numerical approach to calculate inelastic Raman emission in more sophisticated geometries, which do not allow a straightforward analytical form of the Green's function. The Raman response from a silicon nanodisk has been analyzed with the proposed method, and the contribution of various Mie modes has been revealed.
Optically-Induced Magnetic Response in All-Dielectric Nanodisk Composite Structures
NASA Astrophysics Data System (ADS)
Chong, Katie Eve
Optical technologies developed throughout history have been exploiting the electric response in matters in order to control light. However, little has been explored for the magnetic response in matter at optical frequencies due to the lack of magnetic materials in this spectral region. Recently, specially engineered materials, namely metamaterials, have been developed to exploit the magnetic responses in matter for light manipulation. In particular, researchers have made use of the optically-induced magnetic responses (OIMRs) generated in metallic nanostructures to achieve optical effects not seen in nature. Such magnetic responses serve as a second channel to control light, providing an alternative and an addition to the electric responses and leading to novel observations and innovative ideas for light manipulation. This creates many opportunities for the development of the next generation nano-optics and nanophotonic devices. Dielectric nanostructures have recently been discovered to also support OIMR, which is useful for applications requiring low loss and simpler fabrication procedures, such as wavefront control and robust nanoscale sensing. In this thesis, I present the study of OIMR in several all-dielectric systems based on silicon nanodisks, namely single, clusters and regular arrays of nanodisks. The study of these systems provides knowledge for and insight into harnessing the OIMRs in dielectric nanostructures for future applications. Chapter 1 provides a comprehensive introduction to OIMR by presenting a historic overview of the topic and the basic concepts involved for high-index dielectric particles. This is followed by a description of the pioneer works on OIMR in dielectric spherical nanoparticles, including the Mie theory and its recent experimental verification. The similarities and differences between the properties of plasmonic and dielectric nanostructures in the context of metamaterials are also described and explained. Finally, the motivation and scope of the thesis is summarized. Chapter 2 describes the experimental methods used that are common to all works presented in this thesis, including the fabrication of silicon nanodisk structures and the linear optical characterization techniques. Chapter 3 presents the fundamental of OIMR in single silicon nanodisk structures, including a theoretical analysis and experimental observation of various resonant modes of single silicon nanodisks, as well as the numerical and experimental results of the Fano resonances observed in the more complex structures of single heptamer oligomers. Chapter 4 focuses on manipulating the OIMR in combination with the electric response to create Huygens' metasurfaces based on silicon nanodisk arrays. Two highly-efficient functional metadevices with polarization independence based on the Huygens' metasurface system are presented, namely a Gaussian-to-vortex beam shaper and a holographic phase plate. Chapter 5 explores the cross-disciplinary area of sensing using silicon nanodisk arrays with OIMRs, including refractive index sensing using Fano resonances and biosensing using the dipolar magnetic resonances where a new detection limit for the Streptavidin protein was achieved. Chapter 6 concludes the thesis and provides an outlook to the research works that can be extended from the results in this thesis.
The effect of thermal oxidation on the luminescence properties of nanostructured silicon.
Liu, Lijia; Sham, Tsun-Kong
2012-08-06
Herein is reported a detailed study of the luminescence properties of nanostructured Si using X-ray excited optical luminescence (XEOL) in combination with X-ray absorption near-edge structures (XANES). P-type Si nanowires synthesized via electroless chemical etching from Si wafers of different doping levels and porous Si synthesized using electrochemical method are examined under X-ray excitation across the Si K-, L(3,2) -, and O K-edges. It is found that while as-prepared Si nanostructures are weak light emitters, intense visible luminescence is observed from thermally oxidized Si nanowires and porous Si. The luminescence mechanism of Si upon oxidation is investigated by oxidizing nanostructured Si at different temperatures. Interestingly, the two luminescence bands observed show different response with the variation of absorption coefficient upon Si and O core-electron excitation in elemental silicon and silicon oxide. A correlation between luminescence properties and electronic structures is thus established. The implications of the finding are discussed in terms of the behavior of the oxygen deficient center (OCD) and non-bridging oxygen hole center (NBOHC). Copyright © 2012 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
Plasmonic-enhanced organic photovoltaics: breaking the 10% efficiency barrier.
Gan, Qiaoqiang; Bartoli, Filbert J; Kafafi, Zakya H
2013-05-07
Recent advances in molecular organic photovoltaics (OPVs) have shown 10% power conversion efficiency (PCE) for single-junction cells, which put them in direct competition with PVs based on amorphous silicon. Incorporation of plasmonic nanostructures for light trapping in these thin-film devices offers an attractive solution to realize higher-efficiency OPVs with PCE>10%. This article reviews recent progress on plasmonic-enhanced OPV devices using metallic nanoparticles, and one-dimensional (1D) and two-dimensional (2D) patterned periodic nanostructures. We discuss the benefits of using various plasmonic nanostructures for broad-band, polarization-insensitive and angle-independent absorption enhancement, and their integration with one or two electrode(s) of an OPV device. Copyright © 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
Mecanismes d'ablation du silicium par laser ultrarapide amplifie par des nanostructures plasmoniques
NASA Astrophysics Data System (ADS)
Robitaille, Alexandre
Ultrafast laser interaction with gold nanostructures deposited onto a silicon surface produces considerable field amplification that can result in the ablation of features with dimensions smaller than the diffraction limit. This field amplification in the near field of the nanostructures has been thoroughly investigated in the literature. However, while this is the main phenomenon that permits this nanoablation, energy deposition and diffusion processes cannot be neglected to interpret experimental results. In this work, we study plasmon-enhanced femtosecond laser ablation of silicon using gold nanorods and gold nanospheres to produce sub-diffraction limit holes. Atomic force microscopy and scanning electron microscopy of such features are done and hole depth as a function of fluence is measured. Especially for gold nanorods, hole shape is inconsistent with calculated field distribution. Field distribution alone would let us believe that each nanorod would produce two holes at its both ends. We show that using a model based on a differential equations system describing carriers excitation and diffusion, both shape and depth of the nanoholes can be predicted. Importance of the diffusion process is shown to arise from the extreme localization of the deposited energy around the nanostructure, compared to what is usually the case for conventional ablation of a surface. The characteristic shape of holes is revealed as a striking signature of the energy distribution through the electron-phonon carrier density dependant interaction.
Nanostructure iron-silicon thin film deposition using plasma focus device
NASA Astrophysics Data System (ADS)
Kotb, M.; Saudy, A. H.; Hassaballa, S.; Eloker, M. M.
2013-03-01
The presented study in this paper reports the deposition of nano-structure iron-silicon thin film on a glass substrate using 3.3 KJ Mather-type plasma focus device. The iron-silicon powder was put on the top of hollow copper anode electrode. The deposition was done under different experimental conditions such as numbers of electric discharge shots and angular position of substrate. The film samples were exposed to energetic argon ions generated by plasma focus device at different distances from the top of the central electrode. The exposed samples were then analyzed for their structure and optical properties using X-ray diffraction (XRD) and UV-visible spectroscopy. The structure of iron-silicon thin films deposited using plasma focus device depends on the distance from the anode, the number of focus deposition shots and the angular position of the sample
Superior broadband antireflection from buried Mie resonator arrays for high-efficiency photovoltaics
Zhong, Sihua; Zeng, Yang; Huang, Zengguang; Shen, Wenzhong
2015-01-01
Establishing reliable and efficient antireflection structures is of crucial importance for realizing high-performance optoelectronic devices such as solar cells. In this study, we provide a design guideline for buried Mie resonator arrays, which is composed of silicon nanostructures atop a silicon substrate and buried by a dielectric film, to attain a superior antireflection effect over a broadband spectral range by gaining entirely new discoveries of their antireflection behaviors. We find that the buried Mie resonator arrays mainly play a role as a transparent antireflection structure and their antireflection effect is insensitive to the nanostructure height when higher than 150 nm, which are of prominent significance for photovoltaic applications in the reduction of photoexcited carrier recombination. We further optimally combine the buried Mie resonator arrays with micron-scale textures to maximize the utilization of photons, and thus have successfully achieved an independently certified efficiency of 18.47% for the nanostructured silicon solar cells on a large-size wafer (156 mm × 156 mm). PMID:25746848
Facile synthesis of one dimensional ZnO nanostructures for DSSC applications
NASA Astrophysics Data System (ADS)
Marimuthu, T.; Anandhan, N.
2016-05-01
Development of zinc oxide (ZnO) nanostructure based third generation dye sensitized solar cell is interesting compared to conventional silicon solar cells. ZnO nanostructured thin films were electrochemically deposited onto fluorine doped tin oxide (FTO) glass substrate. The effect of ethylene-diamine-tetra-acetic acid (EDTA) on structural, morphological and optical properties is investigated using X-ray diffraction (XRD) meter, field emission scanning electron microscope (FE-SEM) and micro Raman spectroscopy. XRD patterns reveal that the prepared nanostructures are hexagonal wutrzite structures with (101) plane orientation, the nanostructure prepared using EDTA exhibits better crystallinity. FE-SEM images illustrate that the morphological changes are observed from nanorod structure to cauliflower like structure as EDTA is added. Micro Raman spectra predict that cauliflower like structure possesses a higher crystalline nature with less atomic defects compared to nanorod structures. Dye sensitized solar cell (DSSC) is constructed for the optimized cauliflower structure, and open circuit voltage, short circuit density, fill factor and efficiency are estimated from the J-V curve.
Silicon-ion-implanted PMMA with nanostructured ultrathin layers for plastic electronics
NASA Astrophysics Data System (ADS)
Hadjichristov, G. B.; Ivanov, Tz E.; Marinov, Y. G.
2014-12-01
Being of interest for plastic electronics, ion-beam produced nanostructure, namely silicon ion (Si+) implanted polymethyl-methacrylate (PMMA) with ultrathin nanostructured dielectric (NSD) top layer and nanocomposite (NC) buried layer, is examined by electric measurements. In the proposed field-effect organic nanomaterial structure produced within the PMMA network by ion implantation with low energy (50 keV) Si+ at the fluence of 3.2 × 1016 cm-2 the gate NSD is ion-nanotracks-modified low-conductive surface layer, and the channel NC consists of carbon nanoclusters. In the studied ion-modified PMMA field-effect configuration, the gate NSD and the buried NC are formed as planar layers both with a thickness of about 80 nm. The NC channel of nano-clustered amorphous carbon (that is an organic semiconductor) provides a huge increase in the electrical conduction of the material in the subsurface region, but also modulates the electric field distribution in the drift region. The field effect via the gate NSD is analyzed. The most important performance parameters, such as the charge carrier field-effect mobility and amplification of this particular type of PMMA- based transconductance device with NC n-type channel and gate NSD top layer, are determined.
Chen, Hong-Yan; Lu, Hong-Liang; Ren, Qing-Hua; Zhang, Yuan; Yang, Xiao-Feng; Ding, Shi-Jin; Zhang, David Wei
2015-10-07
Inverted pyramid-based nanostructured black-silicon (BS) solar cells with an Al2O3 passivation layer grown by atomic layer deposition (ALD) have been demonstrated. A multi-scale textured BS surface combining silicon nanowires (SiNWs) and inverted pyramids was obtained for the first time by lithography and metal catalyzed wet etching. The reflectance of the as-prepared BS surface was about 2% lower than that of the more commonly reported upright pyramid-based SiNW BS surface over the whole of the visible light spectrum, which led to a 1.7 mA cm(-2) increase in short circuit current density. Moreover, the as-prepared solar cells were further passivated by an ALD-Al2O3 layer. The effect of annealing temperature on the photovoltaic performance of the solar cells was investigated. It was found that the values of all solar cell parameters including short circuit current, open circuit voltage, and fill factor exhibit a further increase under an optimized annealing temperature. Minority carrier lifetime measurements indicate that the enhanced cell performance is due to the improved passivation quality of the Al2O3 layer after thermal annealing treatments. By combining these two refinements, the optimized SiNW BS solar cells achieved a maximum conversion efficiency enhancement of 7.6% compared to the cells with an upright pyramid-based SiNWs surface and conventional SiNx passivation.
Directed dewetting of amorphous silicon film by a donut-shaped laser pulse.
Yoo, Jae-Hyuck; In, Jung Bin; Zheng, Cheng; Sakellari, Ioanna; Raman, Rajesh N; Matthews, Manyalibo J; Elhadj, Selim; Grigoropoulos, Costas P
2015-04-24
Irradiation of a thin film with a beam-shaped laser is proposed to achieve site-selectively controlled dewetting of the film into nanoscale structures. As a proof of concept, the laser-directed dewetting of an amorphous silicon thin film on a glass substrate is demonstrated using a donut-shaped laser beam. Upon irradiation of a single laser pulse, the silicon film melts and dewets on the substrate surface. The irradiation with the donut beam induces an unconventional lateral temperature profile in the film, leading to thermocapillary-induced transport of the molten silicon to the center of the beam spot. Upon solidification, the ultrathin amorphous silicon film is transformed to a crystalline silicon nanodome of increased height. This morphological change enables further dimensional reduction of the nanodome as well as removal of the surrounding film material by isotropic silicon etching. These results suggest that laser-based dewetting of thin films can be an effective way for scalable manufacturing of patterned nanostructures.
Ghosh, Batu; Shirahata, Naoto
2014-01-01
This review describes a series of representative synthesis processes, which have been developed in the last two decades to prepare silicon quantum dots (QDs). The methods include both top-down and bottom-up approaches, and their methodological advantages and disadvantages are presented. Considerable efforts in surface functionalization of QDs have categorized it into (i) a two-step process and (ii) in situ surface derivatization. Photophysical properties of QDs are summarized to highlight the continuous tuning of photoluminescence color from the near-UV through visible to the near-IR range. The emission features strongly depend on the silicon nanostructures including QD surface configurations. Possible mechanisms of photoluminescence have been summarized to ascertain the future challenges toward industrial use of silicon-based light emitters. PMID:27877634
Integrated waveguide and nanostructured sensor platform for surface-enhanced Raman spectroscopy
NASA Astrophysics Data System (ADS)
Pearce, Stuart J.; Pollard, Michael E.; Oo, SweZin; Chen, Ruiqi; Kalsi, Sumit; Charlton, Martin D. B.
2014-01-01
Limitations of current sensors include large dimensions, sometimes limited sensitivity and inherent single-parameter measurement capability. Surface-enhanced Raman spectroscopy can be utilized for environment and pharmaceutical applications with the intensity of the Raman scattering enhanced by a factor of 10. By fabricating and characterizing an integrated optical waveguide beneath a nanostructured precious metal coated surface a new surface-enhanced Raman spectroscopy sensing arrangement can be achieved. Nanostructured sensors can provide both multiparameter and high-resolution sensing. Using the slab waveguide core to interrogate the nanostructures at the base allows for the emission to reach discrete sensing areas effectively and should provide ideal parameters for maximum Raman interactions. Thin slab waveguide films of silicon oxynitride were etched and gold coated to create localized nanostructured sensing areas of various pitch, diameter, and shape. These were interrogated using a Ti:Sapphire laser tuned to 785-nm end coupled into the slab waveguide. The nanostructured sensors vertically projected a Raman signal, which was used to actively detect a thin layer of benzyl mercaptan attached to the sensors.
NASA Astrophysics Data System (ADS)
Kamalieva, A. N.; Toropov, N. A.; Bogdanov, K. V.; Vartanyan, T. A.
2018-03-01
A method of formation of a composite structure based on silver nanoparticles and a thin protective silicon film (Ag NPs/Si) is developed. Enhancement of the fluorescence and Raman scattering in cyaninedye molecules deposited onto the formed nanostructure is observed. The optical properties and morphology stability of particles that are in contact with cyanine-dye solutions in organic solvents are studied. It is shown that the Ag NPs/Si composite structure can be multiply used as an SERS-active surface.
Baquedano, Estela; Martinez, Ramses V; Llorens, José M; Postigo, Pablo A
2017-05-11
Soft lithography allows for the simple and low-cost fabrication of nanopatterns with different shapes and sizes over large areas. However, the resolution and the aspect ratio of the nanostructures fabricated by soft lithography are limited by the depth and the physical properties of the stamp. In this work, silicon nanobelts and nanostructures were achieved by combining soft nanolithography patterning with optimized reactive ion etching (RIE) in silicon. Using polymethylmethacrylate (PMMA) nanopatterned layers with thicknesses ranging between 14 and 50 nm, we obtained silicon nanobelts in areas of square centimeters with aspect ratios up to ~1.6 and linewidths of 225 nm. The soft lithographic process was assisted by a thin film of SiO x (less than 15 nm) used as a hard mask and RIE. This simple patterning method was also used to fabricate 2D nanostructures (nanopillars) with aspect ratios of ~2.7 and diameters of ~200 nm. We demonstrate that large areas patterned with silicon nanobelts exhibit a high reflectivity peak in the ultraviolet C (UVC) spectral region (280 nm) where some aminoacids and peptides have a strong absorption. We also demonstrated how to tailor the aspect ratio and the wettability of these photonic surfaces (contact angles ranging from 8.1 to 96.2°) by changing the RIE power applied during the fabrication process.
NASA Astrophysics Data System (ADS)
Chen, Tianyu; Nam, Yoon-Ho; Wang, Xinke; Han, Peng; Sun, Wenfeng; Feng, Shengfei; Ye, Jiasheng; Song, Jae-Won; Lee, Jung-Ho; Zhang, Chao; Zhang, Yan
2018-01-01
We present femtosecond optical pump-terahertz probe studies on the ultrafast dynamical processes of photo-generated charge carriers in silicon photovoltaic cells with various nanostructured surfaces and doping densities. The pump-probe measurements provide direct insight on the lifetime of photo-generated carriers, frequency-dependent complex dielectric response along with photoconductivity of silicon photovoltaic cells excited by optical pump pulses. A lifetime of photo-generated carriers of tens of nanosecond is identified from the time-dependent pump-induced attenuation of the terahertz transmission. In addition, we find a large value of the imaginary part of the dielectric function and of the real part of the photoconductivity in silicon photovoltaic cells with micron length nanowires. We attribute these findings to the result of defect-enhanced electron-photon interactions. Moreover, doping densities of phosphorous impurities in silicon photovoltaic cells are also quantified using the Drude-Smith model with our measured frequency-dependent complex photoconductivities.
Metamaterial-inspired silicon nanophotonics
NASA Astrophysics Data System (ADS)
Staude, Isabelle; Schilling, Jörg
2017-04-01
The prospect of creating metamaterials with optical properties greatly exceeding the parameter space accessible with natural materials has been inspiring intense research efforts in nanophotonics for more than a decade. Following an era of plasmonic metamaterials, low-loss dielectric nanostructures have recently moved into the focus of metamaterial-related research. This development was mainly triggered by the experimental observation of electric and magnetic multipolar Mie-type resonances in high-refractive-index dielectric nanoparticles. Silicon in particular has emerged as a popular material choice, due to not only its high refractive index and very low absorption losses in the telecom spectral range, but also its paramount technological relevance. This Review overviews recent progress on metamaterial-inspired silicon nanostructures, including Mie-resonant and off-resonant regimes.
Pan, Hui
2014-01-01
Design of novel materials for efficient solar energy conversion is critical to the development of green energy technology. In this work, we present a first-principles study on the design of nanostructures for solar energy harvesting on the basis of the density functional theory. We show that the indirect band structure of bulk silicon nitride is transferred to direct bandgap in nanowire. We find that intermediate bands can be created by doping, leading to enhancement of sunlight absorption. We further show that codoping not only reduces the bandgap and introduces intermediate bands but also enhances the solubility of dopants in silicon nitride nanowires due to reduced formation energy of substitution. Importantly, the codoped nanowire is ferromagnetic, leading to the improvement of carrier mobility. The silicon nitride nanowires with direct bandgap, intermediate bands, and ferromagnetism may be applicable to solar energy harvesting.
Ali, Imran; Tippabhotla, Sasi Kumar; Radchenko, Ihor; ...
2018-04-04
Silicon is considered as a promising anode material for the next-generation lithium-ion battery (LIB) due to its high capacity at nanoscale. However, silicon expands up to 300% during lithiation, which induces high stresses and leads to fractures. To design silicon nanostructures that could minimize fracture, it is important to understand and characterize stress states in the silicon nanostructures during lithiation. Synchrotron X-ray microdiffraction has proven to be effective in revealing insights of mechanical stress and other mechanics considerations in small-scale crystalline structures used in many important technological applications, such as microelectronics, nanotechnology, and energy systems. In the present study, anmore » in situ synchrotron X-ray microdiffraction experiment was conducted to elucidate the mechanical stress states during the first electrochemical cycle of lithiation in single-crystalline silicon nanowires (SiNWs) in an LIB test cell. Morphological changes in the SiNWs at different levels of lithiation were also studied using scanning electron microscope (SEM). It was found from SEM observation that lithiation commenced predominantly at the top surface of SiNWs followed by further progression toward the bottom of the SiNWs gradually. The hydrostatic stress of the crystalline core of the SiNWs at different levels of electrochemical lithiation was determined using the in situ synchrotron X-ray microdiffraction technique. We found that the crystalline core of the SiNWs became highly compressive (up to -325.5 MPa) once lithiation started. In conclusion, this finding helps unravel insights about mechanical stress states in the SiNWs during the electrochemical lithiation, which could potentially pave the path toward the fracture-free design of silicon nanostructure anode materials in the next-generation LIB.« less
DOE Office of Scientific and Technical Information (OSTI.GOV)
Ali, Imran; Tippabhotla, Sasi Kumar; Radchenko, Ihor
Silicon is considered as a promising anode material for the next-generation lithium-ion battery (LIB) due to its high capacity at nanoscale. However, silicon expands up to 300% during lithiation, which induces high stresses and leads to fractures. To design silicon nanostructures that could minimize fracture, it is important to understand and characterize stress states in the silicon nanostructures during lithiation. Synchrotron X-ray microdiffraction has proven to be effective in revealing insights of mechanical stress and other mechanics considerations in small-scale crystalline structures used in many important technological applications, such as microelectronics, nanotechnology, and energy systems. In the present study, anmore » in situ synchrotron X-ray microdiffraction experiment was conducted to elucidate the mechanical stress states during the first electrochemical cycle of lithiation in single-crystalline silicon nanowires (SiNWs) in an LIB test cell. Morphological changes in the SiNWs at different levels of lithiation were also studied using scanning electron microscope (SEM). It was found from SEM observation that lithiation commenced predominantly at the top surface of SiNWs followed by further progression toward the bottom of the SiNWs gradually. The hydrostatic stress of the crystalline core of the SiNWs at different levels of electrochemical lithiation was determined using the in situ synchrotron X-ray microdiffraction technique. We found that the crystalline core of the SiNWs became highly compressive (up to -325.5 MPa) once lithiation started. In conclusion, this finding helps unravel insights about mechanical stress states in the SiNWs during the electrochemical lithiation, which could potentially pave the path toward the fracture-free design of silicon nanostructure anode materials in the next-generation LIB.« less
Silicon Based Anodes for Li-Ion Batteries
DOE Office of Scientific and Technical Information (OSTI.GOV)
Zhang, Jiguang; Wang, Wei; Xiao, Jie
2012-06-15
Silicon is environmentally benign and ubiquitous. Because of its high specific capacity, it is considered one of the most promising candidates to replace the conventional graphite negative electrode used in today's Li ion batteries. Silicon has a theoretical specific capacity of nearly 4200 mAh/g (Li21Si5), which is 10 times larger than the specific capacity of graphite (LiC6, 372 mAh/g). However, the high capacity of silicon is associated with huge volume changes (more than 300 percent) when alloyed with lithium, which can cause severe cracking and pulverization of the electrode and lead to significant capacity loss. Significant scientific research has beenmore » conducted to circumvent the deterioration of silicon based anode materials during cycling. Various strategies, such as reduction of particle size, generation of active/inactive composites, fabrication of silicon based thin films, use of alternative binders, and the synthesis of 1-D silicon nanostructures have been implemented by a number of research groups. Fundamental mechanistic research has also been performed to better understand the electrochemical lithiation and delithiation process during cycling in terms of crystal structure, phase transitions, morphological changes, and reaction kinetics. Although efforts to date have not attained a commercially viable Si anode, further development is expected to produce anodes with three to five times the capacity of graphite. In this chapter, an overview of research on silicon based anodes used for lithium-ion battery applications will be presented. The overview covers electrochemical alloying of the silicon with lithium, mechanisms responsible for capacity fade, and methodologies adapted to overcome capacity degradation observed during cycling. The recent development of silicon nanowires and nanoparticles with significantly improved electrochemical performance will also be discussed relative to the mechanistic understanding. Finally, future directions on the development of silicon based anodes will be considered.« less
Chin, Alan; Keshavarz, Majid; Wang, Qi
2018-04-13
Although texturing of the transparent electrode of thin-film solar cells has long been used to enhance light absorption via light trapping, such texturing has involved low aspect ratio features. With the recent development of nanotechnology, nanostructured substrates enable improved light trapping and enhanced optical absorption via resonances, a process known as photon management, in thin-film solar cells. Despite the progress made in the development of photon management in thin-film solar cells using nanostructures substrates, the structural integrity of the thin-film solar cells deposited onto such nanostructured substrates is rarely considered. Here, we report the observation of the reduction in themore » open circuit voltage of amorphous silicon solar cells deposited onto a nanostructured substrate with increasing areal number density of high aspect ratio structures. For a nanostructured substrate with the areal number density of such nanostructures increasing in correlation with the distance from one edge of the substrate, a correlation between the open circuit voltage reduction and the increase of the areal number density of high aspect ratio nanostructures of the front electrode of the small-size amorphous silicon solar cells deposited onto different regions of the substrate with graded nanostructure density indicates the effect of the surface morphology on the material quality, i.e., a trade-off between photon management efficacy and material quality. Lastly, this observed trade-off highlights the importance of optimizing the morphology of the nanostructured substrate to ensure conformal deposition of the thin-film solar cell.« less
DOE Office of Scientific and Technical Information (OSTI.GOV)
Chin, Alan; Keshavarz, Majid; Wang, Qi
Although texturing of the transparent electrode of thin-film solar cells has long been used to enhance light absorption via light trapping, such texturing has involved low aspect ratio features. With the recent development of nanotechnology, nanostructured substrates enable improved light trapping and enhanced optical absorption via resonances, a process known as photon management, in thin-film solar cells. Despite the progress made in the development of photon management in thin-film solar cells using nanostructures substrates, the structural integrity of the thin-film solar cells deposited onto such nanostructured substrates is rarely considered. Here, we report the observation of the reduction in themore » open circuit voltage of amorphous silicon solar cells deposited onto a nanostructured substrate with increasing areal number density of high aspect ratio structures. For a nanostructured substrate with the areal number density of such nanostructures increasing in correlation with the distance from one edge of the substrate, a correlation between the open circuit voltage reduction and the increase of the areal number density of high aspect ratio nanostructures of the front electrode of the small-size amorphous silicon solar cells deposited onto different regions of the substrate with graded nanostructure density indicates the effect of the surface morphology on the material quality, i.e., a trade-off between photon management efficacy and material quality. Lastly, this observed trade-off highlights the importance of optimizing the morphology of the nanostructured substrate to ensure conformal deposition of the thin-film solar cell.« less
Si-based Nanoparticles: a biocompatibility study
NASA Astrophysics Data System (ADS)
Rivolta, I.; Lettiero, B.; Panariti, A.; D'Amato, R.; Maurice, V.; Falconieri, M.; Herlein, N.; Borsella, E.; Miserocchi, G.
2010-10-01
Exposure to silicon nanoparticles (Si-NPs) may occur in professional working conditions or for people undergoing a diagnostic screening test. Despite the fact that silicon is known as a non-toxic material, in the first case the risk is mostly related to the inhalation of nanoparticles, thus the most likely route of entry is across the lung alveolar epithelium. In the case of diagnostic imaging, nanoparticles are usually injected intravenously and Si-NPs could impact on the endothelial wall. In our study we investigated the interaction between selected Si-based NPs and an epithelial lung cell line. Our data showed that, despite the overall silicon biocompatibility, however accurate studies of the potential toxicity induced by the nanostructure and engineered surface characteristics need to be accurately investigated before Si nanoparticles can be safely used for in vivo applications as bio-imaging, cell staining and drug delivery.
Single-step fabrication of homoepitaxial silicon nanocones by molecular beam epitaxy
NASA Astrophysics Data System (ADS)
Colniţă, Alia; Marconi, Daniel; Brătfălean, Radu Tiberiu; Turcu, Ioan
2018-04-01
The purpose of this work was to optimize a single-step fabrication process of silicon (Si) cones-like nanostructures on Si(111) reconstructed substrates. The substrate temperature is the most important parameter in the Si/Si growth, due to its high influence over the surface nanostructuring and the occurrence of well defined nanocones. We investigate the effect of different substrate temperatures on the density and size distributions of Si nanocones formed during the molecular beam epitaxy (MBE) deposition of Si/Si(111) 7 × 7 reconstructed surfaces. The nanocones were characterized using scanning tunnelling microscopy (STM) and the height and the bottom area distributions of the Si nanocones were assessed. It was found that the obtained distributions are interrelated suggesting the self-similarity of the nanostructures grown during the deposition protocol.
Thermoelectric Figure-of-Merit of Nanostructured Silicon with a Low Concentration of Germanium
NASA Astrophysics Data System (ADS)
Zhu, Gaohua; Lee, Hohyun; Lan, Yucheng; Wang, Xiaowei; Joshi, Giri; Wang, Dezhi; Yang, Jian; Dresselhaus, Mildred; Chen, Gang; Ren, Zhifeng
2009-03-01
The thermoelectric properties of nanostructured silicon (Si) with a low concentration of germanium (Ge) are investigated. A low concentration of Ge leads to a significant cost reduction of the final product since Ge is at least 100 times more expensive than Si. By using only 5 atomic % Ge (Si95Ge5), we have achieved a thermoelectric figure-of-merit (ZT) of 0.95, similar to the ZT in the large grained Si80Ge20 alloy that is three times more expensive, and is almost four times that of the large grained bulk Si. The enhancement in the thermoelectric ZT for the nanostructured Si95Ge5 is mostly due to the reduced thermal conductivity caused by phonon scattering at the increased grain boundaries and the Ge alloying effect.
Plasmonic Ag nanostructures on thin substrates for enhanced energy harvesting
NASA Astrophysics Data System (ADS)
Osgood, R. M.; Giardini, S. A.; Carlson, J. B.; Gear, C.; Diest, K.; Rothschild, M.; Fernandes, G. E.; Xu, J.; Kooi, S.; Periasamy, P.; O'Hayre, R.; Parilla, P.; Berry, J.; Ginley, D.
2013-09-01
Nanoparticles and nanostructures with plasmonic resonances are currently being employed to enhance the efficiency of solar cells. Ag stripe arrays have been shown theoretically to enhance the short-circuit current of thin silicon layers. Such Ag stripes are combined with 200 nm long and 60 nm wide "teeth", which act as nanoantennas, and form vertical rectifying metal-insulator-metal (MIM) nanostructures on metallic substrates coated with thin oxides, such as Nb/NbOx films. We characterize experimentally and theoretically the visible and near-infrared spectra of these "stripeteeth" arrays, which act as microantenna arrays for energy harvesting and detection, on silicon substrates. Modeling the stripe-teeth arrays predicts a substantial net a.c. voltage across the MIM diode, even when the stripe-teeth microrectenna arrays are illuminated at normal incidence.
2013-01-01
We demonstrated a novel, simple, and low-cost method to fabricate silicon nanowire (SiNW) arrays and silicon nanohole (SiNH) arrays based on thin silver (Ag) film dewetting process combined with metal-assisted chemical etching. Ag mesh with holes and semispherical Ag nanoparticles can be prepared by simple thermal annealing of Ag thin film on a silicon substrate. Both the diameter and the distribution of mesh holes as well as the nanoparticles can be manipulated by the film thickness and the annealing temperature. The silicon underneath Ag coverage was etched off with the catalysis of metal in an aqueous solution containing HF and an oxidant, which form silicon nanostructures (either SiNW or SiNH arrays). The morphologies of the corresponding etched SiNW and SiNH arrays matched well with that of Ag holes and nanoparticles. This novel method allows lithography-free fabrication of the SiNW and SiNH arrays with control of the size and distribution. PMID:23557325
Nanostructured silicon anodes for lithium ion rechargeable batteries.
Teki, Ranganath; Datta, Moni K; Krishnan, Rahul; Parker, Thomas C; Lu, Toh-Ming; Kumta, Prashant N; Koratkar, Nikhil
2009-10-01
Rechargeable lithium ion batteries are integral to today's information-rich, mobile society. Currently they are one of the most popular types of battery used in portable electronics because of their high energy density and flexible design. Despite their increasing use at the present time, there is great continued commercial interest in developing new and improved electrode materials for lithium ion batteries that would lead to dramatically higher energy capacity and longer cycle life. Silicon is one of the most promising anode materials because it has the highest known theoretical charge capacity and is the second most abundant element on earth. However, silicon anodes have limited applications because of the huge volume change associated with the insertion and extraction of lithium. This causes cracking and pulverization of the anode, which leads to a loss of electrical contact and eventual fading of capacity. Nanostructured silicon anodes, as compared to the previously tested silicon film anodes, can help overcome the above issues. As arrays of silicon nanowires or nanorods, which help accommodate the volume changes, or as nanoscale compliant layers, which increase the stress resilience of silicon films, nanoengineered silicon anodes show potential to enable a new generation of lithium ion batteries with significantly higher reversible charge capacity and longer cycle life.
NASA Astrophysics Data System (ADS)
Granitzer, P.; Rumpf, K.; Hofmayer, M.; Krenn, H.; Pölt, P.; Reichmann, A.; Hofer, F.
2007-04-01
A matrix of mesoporous silicon offering an array of quasi 1-dimensional oriented pores of high aspect ratio perpendicular to the sample surface has been produced. This porous silicon (PS) skeleton is filled with Ni in a further process-step to achieve ferromagnetic metallic nanostructures within the channels. This produced silicon based nanocomposite is compatible with state-of-the-art silicon technology. Beside the vertical magnetic surface anisotropy of this Ni-filled composite the nearly monodisperse distribution of pore diameters and its regular arrangement in a quasi 2-dimensional lattice provides novel magnetic phenomena like a depression of the magnetization curve at magnetic fields beyond 2T, which can be interpreted as a field induced antiferromagnetic exchange interaction between Ni-wires which is strongly influenced by magnetostrictive stresses at the Ni/Si-interface. 2007 American Institute of Physics
2013-03-07
Distribution Outline/Agenda • Nanophotonics: plasmonics, nanostructures, metasurfaces etc • Integrated Nanophotonics & Silicon Photonics...Highlights Nanophotonics Nanophotonics: metasurfaces , nanostructures, plasmonics etc • Shalaev – Broadband Light Bending with Plasmonic...solitons, slot waveguide, “ Metasurface ” collimator etc " World Changing Ideas 2012” Electronic Tattoos, sciencemag , J. Rogers UICU P
Fabrication of 3D nano-structures using reverse imprint lithography.
Han, Kang-Soo; Hong, Sung-Hoon; Kim, Kang-In; Cho, Joong-Yeon; Choi, Kyung-Woo; Lee, Heon
2013-02-01
In spite of the fact that the fabrication process of three-dimensional nano-structures is complicated and expensive, it can be applied to a range of devices to increase their efficiency and sensitivity. Simple and inexpensive fabrication of three-dimensional nano-structures is necessary. In this study, reverse imprint lithography (RIL) with UV-curable benzylmethacrylate, methacryloxypropyl terminated poly-dimethylsiloxane (M-PDMS) resin and ZnO-nano-particle-dispersed resin was used to fabricate three-dimensional nano-structures.UV-curable resins were placed between a silicon stamp and a PVA transfer template, followed by a UV curing process. Then, the silicon stamp was detached and a 2D pattern layer was transferred to the substrate using diluted UV-curable glue. Consequently, three-dimensional nano-structures were formed by stacking the two-dimensional nano-patterned layers. RIL was applied to a light-emitting diode (LED) to evaluate the optical effects of a nano-patterned layer. As a result, the light extraction of the patterned LED was increased by about 12% compared to an unpatterned LED.
Photon-trapping micro/nanostructures for high linearity in ultra-fast photodiodes
NASA Astrophysics Data System (ADS)
Cansizoglu, Hilal; Gao, Yang; Perez, Cesar Bartolo; Ghandiparsi, Soroush; Ponizovskaya Devine, Ekaterina; Cansizoglu, Mehmet F.; Yamada, Toshishige; Elrefaie, Aly F.; Wang, Shih-Yuan; Islam, M. Saif
2017-08-01
Photodetectors (PDs) in datacom and computer networks where the link length is up to 300 m, need to handle higher than typical input power used in other communication links. Also, to reduce power consumption due to equalization at high speed (>25Gb/s), the datacom links will use PAM-4 signaling instead of NRZ with stringent receiver linearity requirements. Si PDs with photon-trapping micro/nanostructures are shown to have high linearity in output current verses input optical power. Though there is less silicon material due to the holes, the micro-/nanostructured holes collectively reradiate the light to an in-plane direction of the PD surface and can avoid current crowding in the PD. Consequently, the photocurrent per unit volume remains at a low level contributing to high linearity in the photocurrent. We present the effect of design and lattice patterns of micro/nanostructures on the linearity of ultra-fast silicon PDs designed for high speed multi gigabit data networks.
Laser ablation of a silicon target in chloroform: formation of multilayer graphite nanostructures
NASA Astrophysics Data System (ADS)
Abderrafi, Kamal; García-Calzada, Raúl; Sanchez-Royo, Juan F.; Chirvony, Vladimir S.; Agouram, Saïd; Abargues, Rafael; Ibáñez, Rafael; Martínez-Pastor, Juan P.
2013-04-01
With the use of high-resolution transmission electron microscopy, selected area electron diffraction and x-ray photoelectron spectroscopy methods of analysis we show that the laser ablation of a Si target in chloroform (CHCl3) by nanosecond UV pulses (40 ns, 355 nm) results in the formation of about 50-80 nm core-shell nanoparticles with a polycrystalline core composed of small (5-10 nm) Si and SiC mono-crystallites, the core being coated by several layers of carbon with the structure of graphite (the shell). In addition, free carbon multilayer nanostructures (carbon nano-onions) are also found in the suspension. On the basis of a comparison with similar laser ablation experiments implemented in carbon tetrachloride (CCl4), where only bare (uncoated) Si nanoparticles are produced, we suggest that a chemical (solvent decomposition giving rise to highly reactive CH-containing radicals) rather than a physical (solvent atomization followed by carbon nanostructure formation) mechanism is responsible for the formation of graphitic shells. The silicon carbonization process found for the case of laser ablation in chloroform may be promising for silicon surface protection and functionalization.
NASA Astrophysics Data System (ADS)
Lubner, Sean; Khan, Md. Imran; Dames, Chris
In the electronics and clean energy fields, it is increasingly necessary to reliably model the dissipation of heat from micro and nanostructures or nanostructured materials such as in batteries, computer chips, and thermoelectrics. In these regimes where length scales are comparable to the mean free paths (MFPs) of energy carriers, the diffusion law of heat conduction begins to break down. In this talk, I present our recent results from using a time domain thermoreflectance (TDTR) technique with laser spot 1/e-squared radii less than 2 microns to measure sub-diffusion thermal transport in silicon, nanograined-silicon (ng-Si), and silicon germanium (SiGe) alloys. Our results experimentally demonstrate that alloy scattering skews phonon spectra toward longer MFPs, while nanostructuring skews phonon spectra toward shorter MFPs. As a consequence, we show that a significant fraction of the heat-carrying phonons in SiGe have MFPs greater than 10 microns at room temperature, and that the thermal conductivity of ng-Si overtakes that of SiGe after microstructuring. NSF.
Hossain, Mozakkar; Kumar, Gundam Sandeep; Barimar Prabhava, S N; Sheerin, Emmet D; McCloskey, David; Acharya, Somobrata; Rao, K D M; Boland, John J
2018-05-22
Optically transparent photodetectors are crucial in next-generation optoelectronic applications including smart windows and transparent image sensors. Designing photodetectors with high transparency, photoresponsivity, and robust mechanical flexibility remains a significant challenge, as is managing the inevitable trade-off between high transparency and strong photoresponse. Here we report a scalable method to produce flexible crystalline Si nanostructured wire (NW) networks fabricated from silicon-on-insulator (SOI) with seamless junctions and highly responsive porous Si segments that combine to deliver exceptional performance. These networks show high transparency (∼92% at 550 nm), broadband photodetection (350 to 950 nm) with excellent responsivity (25 A/W), optical response time (0.58 ms), and mechanical flexibility (1000 cycles). Temperature-dependent photocurrent measurements indicate the presence of localized electronic states in the porous Si segments, which play a crucial role in light harvesting and photocarrier generation. The scalable low-cost approach based on SOI has the potential to deliver new classes of flexible optoelectronic devices, including next-generation photodetectors and solar cells.
Super-Lensing and Sub-Wavelength Antennas in Mid-IR Using Silicon Carbide
NASA Astrophysics Data System (ADS)
Shvets, Gennady; Korobkin, Dmitriy; Urzhumov, Yaroslav A.; Zorman, Christian
2006-03-01
Extraordinary properties of SiC in mid-infrared (negative dielectric permittivity and small losses) make it an ideal building block for making negative index meta-materials in that important part of the electromagnetic spectrum. We report on a series of experiments demonstrating that thin films of SiC can be used as a ``perfect'' near-field lens. We have theoretically designed and experimentally implemented a super-lens ion mid-IR using SiC. We also report excitation of electrostatic resonances of two structures based on a sub-micron film of crystalline silicon carbide: (a) nano-holes drilled in the free-standing SiC membrane, and (b) metallic nano-posts evaporated on the SiC membrane. Applications of nano-hole resonances to excitation of magnetic moments in nano-structured SiC and development of negative index materials will be discussed, as will be the prospects of using nano-structured SiC films for laser processing of materials on a nanoscale.
Ogata, K; Salager, E; Kerr, C J; Fraser, A E; Ducati, C; Morris, A J; Hofmann, S; Grey, C P
2014-01-01
Nano-structured silicon anodes are attractive alternatives to graphitic carbons in rechargeable Li-ion batteries, owing to their extremely high capacities. Despite their advantages, numerous issues remain to be addressed, the most basic being to understand the complex kinetics and thermodynamics that control the reactions and structural rearrangements. Elucidating this necessitates real-time in situ metrologies, which are highly challenging, if the whole electrode structure is studied at an atomistic level for multiple cycles under realistic cycling conditions. Here we report that Si nanowires grown on a conducting carbon-fibre support provide a robust model battery system that can be studied by (7)Li in situ NMR spectroscopy. The method allows the (de)alloying reactions of the amorphous silicides to be followed in the 2nd cycle and beyond. In combination with density-functional theory calculations, the results provide insight into the amorphous and amorphous-to-crystalline lithium-silicide transformations, particularly those at low voltages, which are highly relevant to practical cycling strategies.
Potentialities of silicon nanowire forests for thermoelectric generation
NASA Astrophysics Data System (ADS)
Dimaggio, Elisabetta; Pennelli, Giovanni
2018-04-01
Silicon is a material with very good thermoelectric properties, with regard to Seebeck coefficient and electrical conductivity. Low thermal conductivities, and hence high thermal to electrical conversion efficiencies, can be achieved in nanostructures, which are smaller than the phonon mean free path but large enough to preserve the electrical conductivity. We demonstrate that it is possible to fabricate a leg of a thermoelectric generator based on large collections of long nanowires, placed perpendicularly to the two faces of a silicon wafer. The process exploits the metal assisted etching technique which is simple, low cost, and can be easily applied to large surfaces. Copper can be deposited by electrodeposition on both faces, so that contacts can be provided, on top of the nanowires. Thermal conductivity of silicon nanowire forests with more than 107 nanowires mm-2 have been measured; the result is comparable with that achieved by several groups on devices based on few nanowires. On the basis of the measured parameters, numerical calculations of the efficiency of silicon-based thermoelectric generators are reported, and the potentialities of these devices for thermal to electrical energy conversion are shown. Criteria to improve the conversion efficiency are suggested and described.
Sinusoidal nanotextures for light management in silicon thin-film solar cells.
Köppel, G; Rech, B; Becker, C
2016-04-28
Recent progresses in liquid phase crystallization enabled the fabrication of thin wafer quality crystalline silicon layers on low-cost glass substrates enabling conversion efficiencies up to 12.1%. Because of its indirect band gap, a thin silicon absorber layer demands for efficient measures for light management. However, the combination of high quality crystalline silicon and light trapping structures is still a critical issue. Here, we implement hexagonal 750 nm pitched sinusoidal and pillar shaped nanostructures at the sun-facing glass-silicon interface into 10 μm thin liquid phase crystallized silicon thin-film solar cell devices on glass. Both structures are experimentally studied regarding their optical and optoelectronic properties. Reflection losses are reduced over the entire wavelength range outperforming state of the art anti-reflective planar layer systems. In case of the smooth sinusoidal nanostructures these optical achievements are accompanied by an excellent electronic material quality of the silicon absorber layer enabling open circuit voltages above 600 mV and solar cell device performances comparable to the planar reference device. For wavelengths smaller than 400 nm and higher than 700 nm optical achievements are translated into an enhanced quantum efficiency of the solar cell devices. Therefore, sinusoidal nanotextures are a well-balanced compromise between optical enhancement and maintained high electronic silicon material quality which opens a promising route for future optimizations in solar cell designs for silicon thin-film solar cells on glass.
David Adler Lectureship Award Talk: III-V Semiconductor Nanowires on Silicon for Future Devices
NASA Astrophysics Data System (ADS)
Riel, Heike
Bottom-up grown nanowires are very attractive materials for direct integration of III-V semiconductors on silicon thus opening up new possibilities for the design and fabrication of nanoscale devices for electronic, optoelectronic as well as quantum information applications. Template-Assisted Selective Epitaxy (TASE) allows the well-defined and monolithic integration of complex III-V nanostructures and devices on silicon. Achieving atomically abrupt heterointerfaces, high crystal quality and control of dimension down to 1D nanowires enabled the demonstration of FETs and tunnel devices based on In(Ga)As and GaSb. Furthermore, the strong influence of strain on nanowires as well as results on quantum transport studies of InAs nanowires with well-defined geometry will be presented.
NASA Astrophysics Data System (ADS)
Zhou, Xiaoming; Liu, Yang; Du, Chunyu; Ren, Yang; Mu, Tiansheng; Zuo, Pengjian; Yin, Geping; Ma, Yulin; Cheng, Xinqun; Gao, Yunzhi
2018-03-01
Seeking free volume around nanostructures for silicon-based anodes has been a crucial strategy to improve cycling and rate performance in the next generation Li-ion batteries. Herein, through a simple pyrolysis and in-situ polymerization approach, the low cost commercially available melamine foam as a soft template converts carbon nanotubes into highly dispersed and three-dimensionally interconnected framework with encapsulated silicon/polyaniline hierarchical nanoarchitecture. This unique core-sheath structure based on carbon nanotubes foam integrates a large number of mesoporous, thus providing well-accessible space for electrolyte wetting, whereas the carbon nanotubes matrix serves as conductive thoroughfares for electron transport. Meanwhile, the outer polyaniline coated on silicon nanoparticles provides effective space for volume expansion of silicon, further inhibiting the active material escape from the current collector. As expected, the PANI-Si@CNTs foam exhibits a high initial specific capacity of 1954 mAh g-1 and retains 727 mAh g-1 after 100 cycles at 100 mA g-1, which can be attributed to highly electrical conductivity of carbon nanotubes and protective layer of polyaniline sheath, together with three-dimensionally interconnected porous skeleton. This facile structure can pave a way for large scale synthesis of high durable silicon-based anodes or other electrode materials with huge volume expansion.
2004-12-01
the Japanese art of “ origami ”) involves patterning adjacent 2D membranes that can be lifted off (using methods we have developed) of a silicon...innovative process holds immense potential for the Army’s Objective Force Warrior. Nanostructured Origami enables many practical and promising...Nanostructured Origami allows such devices to be formed from a single, micro/nanofabricated layer. In addition, nanoarchitecture can be added
NASA Astrophysics Data System (ADS)
Zianni, Xanthippi
2018-03-01
Width-modulated nanowires have been proposed as efficient thermoelectric materials. Here, the electron and phonon transport properties and the thermoelectric efficiency are discussed for dimensions above the quantum confinement regime. The thermal conductivity decreases dramatically in the presence of thin constrictions due to their ballistic thermal resistance. It shows a scaling behavior upon the width-modulation rate that allows for thermal conductivity engineering. The electron conductivity also decreases due to enhanced boundary scattering by the constrictions. The effect of boundary scattering is weaker for electrons than for phonons and the overall thermoelectric efficiency is enhanced. A ZT enhancement by a factor of 20-30 is predicted for width-modulated nanowires compared to bulk silicon. Our findings indicate that width-modulated nanostructures are promising for developing silicon nanostructures with high thermoelectric efficiency.
Yang, Liu; Kou, Pengfei; He, Nan; Dai, Hao; He, Sailing
2017-06-26
A facile polymethyl methacrylate-assisted turnover-transfer approach is developed to fabricate uniform hexagonal gold nanobowl arrays. The bare array shows inferior light trapping ability compared to its inverted counterpart (a gold nanospherical shell array). Surprisingly, after being coated with a 60-nm thick amorphous silicon film, an anomalous light trapping enhancement is observed with a significantly enhanced average absorption (82%), while for the inverted nanostructure, the light trapping becomes greatly weakened with an average absorption of only 66%. Systematic experimental and theoretical results show that the main reason for the opposite light trapping behaviors lies in the top amorphous silicon coating, which plays an important role in mediating the excitation of surface plasmon polaritons and the electric field distributions in both nanostructures.
Silicon-nanomembrane-based photonic crystal nanostructures for chip-integrated open sensor systems
NASA Astrophysics Data System (ADS)
Chakravarty, Swapnajit; Lai, Wei-Cheng; Zou, Yi; Lin, Cheyun; Wang, Xiaolong; Chen, Ray T.
2011-11-01
We experimentally demonstrate two devices on the photonic crystal platform for chip-integrated optical absorption spectroscopy and chip-integrated biomolecular microarray assays. Infrared optical absorption spectroscopy and biomolecular assays based on conjugate-specific binding principles represent two dominant sensing mechanisms for a wide spectrum of applications in environmental pollution sensing in air and water, chem-bio agents and explosives detection for national security, microbial contamination sensing in food and beverages to name a few. The easy scalability of photonic crystal devices to any wavelength ensures that the sensing principles hold across a wide electromagnetic spectrum. Silicon, the workhorse of the electronics industry, is an ideal platform for the above optical sensing applications.
NASA Astrophysics Data System (ADS)
Domashevskaya, E. P.; Guda, A. A.; Chernyshev, A. V.; Sitnikov, V. G.
2017-02-01
Multilayered nanostructures (MN) were prepared by ion-beam successive sputtering from two targets, one of which was a metallic Co45Fe45Zr10 alloy plate and another target was a quartz (SiO2) or silicon plate on the surface of a rotating glass-ceramic substrate in an argon atmosphere. The Co and Fe K edges X-ray absorption fine structure of XANES in the (CoFeZr/SiO2)32 sample with oxide interlayers was similar to XANES of metallic Fe foil. This indicated the existence in metallic layers of multilayered CoFeZr nanocrystals with a local environment similar to the atomic environment in solid solutions on the base of bcc Fe structure, which is also confirmed by XRD data. XANES near the Co and Fe K edges absorption in another multilayered nanostructure with silicon interlayers (CoFeZr/ a-Si)40 differs from XANES of MN with dielectric SiO2 interlayer, which demonstrates a dominant influence of the Fe-Si and Co-Si bonds in the local environment of 3 d Co and Fe metals when they form CoFeSi-type silicide phases in thinner bilayers of this MN.
Hybrid silicon–carbon nanostructures for broadband optical absorption
Yang, Wen -Hua; Lu, Wen -Cai; Ho, K. M.; ...
2017-01-25
Proper design of nanomaterials for broadband light absorption is a key factor for improving the conversion efficiency of solar cells. Here we present a hybrid design of silicon–carbon nanostructures with silicon clusters coated by carbon cages, i.e., Si m@C 2n for potential solar cell application. The optical properties of these hybrid nanostructures were calculated based on time dependent density function theory (TDDFT). The results show that the optical spectra of Si m@C 2n are very different from those of pure Si m and C 2n clusters. While the absorption spectra of pure carbon cages and Si m clusters exhibit peaksmore » in the UV region, those of the Si m@C 2n nanostructures exhibit a significant red shift. Superposition of the optical spectra of various Si m@C 2n nanostructures forms a broad-band absorption, which extends to the visible light and infrared regions. As a result, the broadband adsorption of the assembled Si m@C 2n nanoclusters may provide a new approach for the design of high efficiency solar cell nanomaterials.« less
Multifunctional Ceramic Nanostructured Coatings
2010-12-01
silicon carbide composites // J. Europ. Cer. Soc. − 2004. − Vol. 24. − P. 2169−2179. 22. Yu. P. Udalov, E. E. Valova, S. S. Ordanian. Fabrication and...by the titanium and tungsten borides and carbides . The analysis was done using the X-ray and electron-optical methods. This information expands our...coating compositions should be based on limited solubility materials. Such systems include carbides , nitrides, borides and silicides based on
Nanostructure Engineered Chemical Sensors for Hazardous Gas and Vapor Detection
NASA Technical Reports Server (NTRS)
Li, Jing; Lu, Yijiang
2005-01-01
A nanosensor technology has been developed using nanostructures, such as single walled carbon nanotubes (SWNTs) and metal oxides nanowires or nanobelts, on a pair of interdigitated electrodes (IDE) processed with a silicon based microfabrication and micromachining technique. The IDE fingers were fabricated using thin film metallization techniques. Both in-situ growth of nanostructure materials and casting of the nanostructure dispersions were used to make chemical sensing devices. These sensors have been exposed to hazardous gases and vapors, such as acetone, benzene, chlorine, and ammonia in the concentration range of ppm to ppb at room temperature. The electronic molecular sensing in our sensor platform can be understood by electron modulation between the nanostructure engineered device and gas molecules. As a result of the electron modulation, the conductance of nanodevice will change. Due to the large surface area, low surface energy barrier and high thermal and mechanical stability, nanostructured chemical sensors potentially can offer higher sensitivity, lower power consumption and better robustness than the state-of-the-art systems, which make them more attractive for defense and space applications. Combined with MEMS technology, light weight and compact size sensors can be made in wafer scale with low cost.
Engineering optical properties using plasmonic nanostructures
NASA Astrophysics Data System (ADS)
Tamma, Venkata Ananth
Plasmonic nanostructures can be engineered to take on unusual optical properties not found in natural materials. The optical responses of plasmonic materials are functions of the structural parameters and symmetry of the nanostructures, material parameters of the nanostructure and its surroundings and the incidence angle, frequency and polarization state of light. The scattering and hence the visibility of an object could be reduced by coating it with a plasmonic material. In this thesis, presented is an optical frequency scattering cancelation device composed of a silicon nanorod coated by a plasmonic gold nanostructure. The principle of operation was theoretically analyzed using Mie theory and the device design was verified by extensive numerical simulations. The device was fabricated using a combination of nanofabrication techniques such as electron beam lithography and focused ion beam milling. The optical responses of the scattering cancelation device and a control sample of bare silicon rod were directly visualized using near-field microscopy coupled with heterodyne interferometric detection. The experimental results were analyzed and found to match very well with theoretical prediction from numerical simulations thereby validating the design principles and our implementation. Plasmonic nanostructures could be engineered to exhibit unique optical properties such as Fano resonance characterized by narrow asymmetrical lineshape. We present dynamic tuning and symmetry lowering of Fano resonances in plasmonic nanostructures fabricated on flexible substrates. The tuning of Fano resonance was achieved by application of uniaxial mechanical stress. The design of the nanostructures was facilitated by extensive numerical simulations and the symmetry lowering was analyzed using group theoretical methods. The nanostructures were fabricated using electron beam lithography and optically characterized for various mechanical stress. The experimental results were in good agreement with the numerical simulations. The mechanically tunable plasmonic nanostructure could serve as a platform for dynamically tunable nanophotonic devices such as sensors and tunable filters.
Tank, Chiti; Raman, Sujatha; Karan, Sujoy; Gosavi, Suresh; Lalla, Niranjan P; Sathe, Vasant; Berndt, Richard; Gade, W N; Bhoraskar, S V; Mathe, Vikas L
2013-06-01
Silica-coated, silicon nanotubes (SCSNTs) and silica-coated, silicon nanoparticles (SCSNPs) have been synthesized by catalyst-free single-step gas phase condensation using the arc plasma process. Transmission electron microscopy and scanning tunneling microscopy showed that SCSNTs exhibited a wall thickness of less than 1 nm, with an average diameter of 14 nm and a length of several 100 nm. Both nano-structures had a high specific surface area. The present study has demonstrated cheaper, resistance-free and effective antibacterial activity in silica-coated silicon nano-structures, each for two Gram-positive and Gram-negative bacteria. The minimum inhibitory concentration (MIC) was estimated, using the optical densitometric technique, and by determining colony-forming units. The MIC was found to range in the order of micrograms, which is comparable to the reported MIC of metal oxides for these bacteria. SCSNTs were found to be more effective in limiting the growth of multidrug-resistant Staphylococcus aureus over SCSNPs at 10 μg/ml (IC 50 = 100 μg/ml).
Wang, Mengjia; Hartman, Philip S; Loni, Armando; Canham, Leigh T; Bodiford, Nelli; Coffer, Jeffery L
2015-06-09
Nanostructured mesoporous silicon possesses important properties advantageous to drug loading and delivery. For controlled release of the antibacterial drug triclosan, and its associated activity versus Staphylococcus aureus, previous studies investigated the influence of porosity of the silicon matrix. In this work, we focus on the complementary issue of the influence of surface chemistry on such properties, with particular regard to drug loading and release kinetics that can be ideally adjusted by surface modification. Comparison between drug release from as-anodized, hydride-terminated hydrophobic porous silicon and the oxidized hydrophilic counterpart is complicated due to the rapid bioresorption of the former; hence, a hydrophobic interface with long-term biostability is desired, such as can be provided by a relatively long chain octyl moiety. To minimize possible thermal degradation of the surfaces or drug activity during loading of molten drug species, a solution loading method has been investigated. Such studies demonstrate that the ability of porous silicon to act as an effective carrier for sustained delivery of antibacterial agents can be sensitively altered by surface functionalization.
NASA Astrophysics Data System (ADS)
Voitenko, K.; Isaiev, M.; Pastushenko, A.; Andrusenko, D.; Kuzmich, A.; Lysenko, V.; Burbelo, R.
2017-01-01
In the paper the experimental study of heat transport across the interface “porous silicon/liquid” by photoacoustic technique is reported. Two cases with and without liquid covering of porous silicon surface were considered. Thermal perturbations were excited at the surface of porous silicon as a result of absorption of the light with modulated intensity. The resulting thermal-elastic stresses arising in the system were registered with piezoelectric transducer. The amplitude-frequency dependencies of the voltage on the piezoelectric electrodes were measured. The presence of the liquid film leads to decreasing of the amplitude of photoacoustic signal as a result of the thermal energy evacuation from the porous silicon into the liquid. The experimental dependencies were fitted with the results of simulation that takes into account heat fluxes separation at the porous silicon/liquid interface. With the presented method one can precisely measure heat fluxes transferred from the solid into contacting fluid. Moreover, the presented approach can be easily adopted for the thermal conductivity study of the different nanofluids as well as thermal resistance at the interface nanostructured solid/fluid.
NASA Astrophysics Data System (ADS)
Bandarenka, Hanna V.; Girel, Kseniya V.; Bondarenko, Vitaly P.; Khodasevich, Inna A.; Panarin, Andrei Yu.; Terekhov, Sergei N.
2016-05-01
Plasmonic nanostructures demonstrating an activity in the surface-enhanced Raman scattering (SERS) spectroscopy have been fabricated by an immersion deposition of silver nanoparticles from silver salt solution on mesoporous silicon (meso-PS). The SERS signal intensity has been found to follow the periodical repacking of the silver nanoparticles, which grow according to the Volmer-Weber mechanism. The ratio of silver salt concentration and immersion time substantially manages the SERS intensity. It has been established that optimal conditions of nanostructured silver layers formation for a maximal Raman enhancement can be chosen taking into account a special parameter called effective time: a product of the silver salt concentration on the immersion deposition time. The detection limit for porphyrin molecules CuTMPyP4 adsorbed on the silvered PS has been evaluated as 10-11 M.
Dielectric Meta-Holograms Enabled with Dual Magnetic Resonances in Visible Light.
Li, Zile; Kim, Inki; Zhang, Lei; Mehmood, Muhammad Q; Anwar, Muhammad S; Saleem, Murtaza; Lee, Dasol; Nam, Ki Tae; Zhang, Shuang; Luk'yanchuk, Boris; Wang, Yu; Zheng, Guoxing; Rho, Junsuk; Qiu, Cheng-Wei
2017-09-26
Efficient transmission-type meta-holograms have been demonstrated using high-index dielectric nanostructures based on Huygens' principle. It is crucial that the geometry size of building blocks be judiciously optimized individually for spectral overlap of electric and magnetic dipoles. In contrast, reflection-type meta-holograms using the metal/insulator/metal scheme and geometric phase can be readily achieved with high efficiency and small thickness. Here, we demonstrate a general platform for design of dual magnetic resonance based meta-holograms based on the geometric phase using silicon nanostructures that are quarter wavelength thick for visible light. Significantly, the projected holographic image can be unambiguously observed without a receiving screen even under the illumination of natural light. Within the well-developed semiconductor industry, our ultrathin magnetic resonance-based meta-holograms may have promising applications in anticounterfeiting and information security.
Directional Etching of Silicon by Silver Nanostructures
NASA Astrophysics Data System (ADS)
Sharma, Pradeep; Wang, Yuh-Lin
2011-02-01
We report directional etching of nanostructures (nanochannels and nanotrenches) into the Si(100) substrates in aqueous HF and H2O2 solution by lithographically defined Ag patterns (nanoparticles, nanorods, and nanorings). The Effect of Ag/Si interface oxide on the directional etching has been studied by etching Ag/SiOx/Si samples of known interface oxide thickness. Based on high resolution transmission electron microscopy (HRTEM) imaging and TEM-energy dispersive X-ray (EDX) spectra of the Ag/Si interfaces, we propose that maintenance of the sub-nanometer oxide at the Ag/Si interfaces and Ag-Si interaction are the key factors which regulate the directional etching of Si.
NASA Astrophysics Data System (ADS)
Vanjaria, Jignesh V.; Azhar, Ebraheem Ali; Yu, Hongbin
2016-11-01
One-dimensional (1D) Zn x Mg1-x O nanomaterials have drawn global attention due to their remarkable chemical and physical properties, and their diverse current and future technological applications. In this work, 1D ZnMgO nanostructures with different magnesium concentrations and different morphologies were grown directly on zinc oxide-coated silicon substrates by thermal evaporation of zinc oxide, magnesium boride and graphite powders. Highly well-defined Mg-rich ZnMgO nanorods with a rock salt structure and Zn-rich ZnMgO nanostructures with a wurtzite structure have been deposited individually by careful optimization of the source mixture and process parameters. Structural and optical properties of the deposited products were studied by scanning electron microscopy, energy dispersive x-ray spectroscopy, x-ray diffraction, and Raman spectroscopy. Cathodoluminescence measurements demonstrate strong dominant peaks at 3.3 eV in Mg poor ZnMgO nanostructures and 4.8 eV in Mg rich nanostructures implying that the ZnMgO nanostructures can be used for the fabrication of deep UV optoelectronic devices. A mechanism for the formation and achieved diverse morphology of the ZnMgO nanostructures was proposed based on the characterization results.
Sun, Zhelin; Wang, Deli; Xiang, Jie
2014-11-25
Spontaneous attractions between free-standing nanostructures have often caused adhesion or stiction that affects a wide range of nanoscale devices, particularly nano/microelectromechanical systems. Previous understandings of the attraction mechanisms have included capillary force, van der Waals/Casimir forces, and surface polar charges. However, none of these mechanisms universally applies to simple semiconductor structures such as silicon nanowire arrays that often exhibit bunching or adhesions. Here we propose a simple capacitive force model to quantitatively study the universal spontaneous attraction that often causes stiction among semiconductor or metallic nanostructures such as vertical nanowire arrays with inevitably nonuniform size variations due to fabrication. When nanostructures are uniform in size, they share the same substrate potential. The presence of slight size differences will break the symmetry in the capacitive network formed between the nanowires, substrate, and their environment, giving rise to electrostatic attraction forces due to the relative potential difference between neighboring wires. Our model is experimentally verified using arrays of vertical silicon nanowire pairs with varied spacing, diameter, and size differences. Threshold nanowire spacing, diameter, or size difference between the nearest neighbors has been identified beyond which the nanowires start to exhibit spontaneous attraction that leads to bridging when electrostatic forces overcome elastic restoration forces. This work illustrates a universal understanding of spontaneous attraction that will impact the design, fabrication, and reliable operation of nanoscale devices and systems.
Selective growth of palladium and titanium dioxide nanostructures inside carbon nanotube membranes
NASA Astrophysics Data System (ADS)
Hevia, Samuel; Homm, Pía; Cortes, Andrea; Núñez, Verónica; Contreras, Claudia; Vera, Jenniffer; Segura, Rodrigo
2012-06-01
Hybrid nanostructured arrays based on carbon nanotubes (CNT) and palladium or titanium dioxide materials have been synthesized using self-supported and silicon-supported anodized aluminum oxide (AAO) as nanoporous template. It is well demonstrated that carbon nanotubes can be grown using these membranes and hydrocarbon precursors that decompose at temperatures closer to 600°C without the use of a metal catalyst. In this process, carbonic fragments condensate to form stacked graphitic sheets, which adopt the shape of the pores, yielding from these moulds' multi-walled carbon nanotubes. After this process, the ends of the tubes remain open and accessible to other substances, whereas the outer walls are protected by the alumina. Taking advantage of this fact, we have performed the synthesis of palladium and titanium dioxide nanostructures selectively inside carbon nanotubes using these CNT-AAO membranes as nanoreactors.
Selective growth of palladium and titanium dioxide nanostructures inside carbon nanotube membranes.
Hevia, Samuel; Homm, Pía; Cortes, Andrea; Núñez, Verónica; Contreras, Claudia; Vera, Jenniffer; Segura, Rodrigo
2012-06-25
Hybrid nanostructured arrays based on carbon nanotubes (CNT) and palladium or titanium dioxide materials have been synthesized using self-supported and silicon-supported anodized aluminum oxide (AAO) as nanoporous template. It is well demonstrated that carbon nanotubes can be grown using these membranes and hydrocarbon precursors that decompose at temperatures closer to 600°C without the use of a metal catalyst. In this process, carbonic fragments condensate to form stacked graphitic sheets, which adopt the shape of the pores, yielding from these moulds' multi-walled carbon nanotubes. After this process, the ends of the tubes remain open and accessible to other substances, whereas the outer walls are protected by the alumina. Taking advantage of this fact, we have performed the synthesis of palladium and titanium dioxide nanostructures selectively inside carbon nanotubes using these CNT-AAO membranes as nanoreactors.
In-plane InSb nanowires grown by selective area molecular beam epitaxy on semi-insulating substrate.
Desplanque, L; Bucamp, A; Troadec, D; Patriarche, G; Wallart, X
2018-07-27
In-plane InSb nanostructures are grown on a semi-insulating GaAs substrate using an AlGaSb buffer layer covered with a patterned SiO 2 mask and selective area molecular beam epitaxy. The shape of these nanostructures is defined by the aperture in the silicon dioxide layer used as a selective mask thanks to the use of an atomic hydrogen flux during the growth. Transmission electron microscopy reveals that the mismatch accommodation between InSb and GaAs is obtained in two steps via the formation of an array of misfit dislocations both at the AlGaSb buffer layer/GaAs and at the InSb nanostructures/AlGaSb interfaces. Several micron long in-plane nanowires (NWs) can be achieved as well as more complex nanostructures such as branched NWs. The electrical properties of the material are investigated by the characterization of an InSb NW MOSFET down to 77 K. The resulting room temperature field effect mobility values are comparable with those reported on back-gated MOSFETs based on InSb NWs obtained by vapor liquid solid growth or electrodeposition. This growth method paves the way to the fabrication of complex InSb-based nanostructures.
Label-Free Direct Electronic Detection of Biomolecules with Amorphous Silicon Nanostructures
Lund, John; Mehta, Ranjana; Parviz, Babak A.
2007-01-01
We present the fabrication and characterization of a nano-scale sensor made of amorphous silicon for the label-free, electronic detection of three classes of biologically important molecules: ions, oligonucleotides, and proteins. The sensor structure has an active element which is a 50 nm wide amorphous silicon semicircle and has a total footprint of less than 4 μm2. We demonstrate the functionalization of the sensor with receptor molecules and the electronic detection of three targets: H+ ions, short single-stranded DNAs, and streptavidin. The sensor is able to reliably distinguish single base-pair mismatches in 12 base long strands of DNA and monitor the introduction and identification of straptavidin in real-time. The versatile sensor structure can be readily functionalized with a wide range of receptor molecules and is suitable for integration with high-speed electronic circuits as a post-process on an integrated circuit chip. PMID:17292148
2011-02-01
was calculated as the difference between the lowest point of the rigid indenter and the initial position of the sample’s free surface. The total...SiC A high pressure structural phase transformation (HPPT) was previously reported for silicon, gallium arsenide, and silicon nitride and indirect...molecular dynamics (MD) simulations with thermodynamic analysis to settle this debate whether silicon carbide (SiC) can undergo a high pressure phase
Nanostructured Porous Silicon: The Winding Road from Photonics to Cell Scaffolds – A Review
Hernández-Montelongo, Jacobo; Muñoz-Noval, Alvaro; García-Ruíz, Josefa Predestinación; Torres-Costa, Vicente; Martín-Palma, Raul J.; Manso-Silván, Miguel
2015-01-01
For over 20 years, nanostructured porous silicon (nanoPS) has found a vast number of applications in the broad fields of photonics and optoelectronics, triggered by the discovery of its photoluminescent behavior in 1990. Besides, its biocompatibility, biodegradability, and bioresorbability make porous silicon (PSi) an appealing biomaterial. These properties are largely a consequence of its particular susceptibility to oxidation, leading to the formation of silicon oxide, which is readily dissolved by body fluids. This paper reviews the evolution of the applications of PSi and nanoPS from photonics through biophotonics, to their use as cell scaffolds, whether as an implantable substitute biomaterial, mainly for bony and ophthalmological tissues, or as an in vitro cell conditioning support, especially for pluripotent cells. For any of these applications, PSi/nanoPS can be used directly after synthesis from Si wafers, upon appropriate surface modification processes, or as a composite biomaterial. Unedited studies of fluorescently active PSi structures for cell culture are brought to evidence the margin for new developments. PMID:26029688
Dehzangi, Arash; Larki, Farhad; Hutagalung, Sabar D.; Goodarz Naseri, Mahmood; Majlis, Burhanuddin Y.; Navasery, Manizheh; Hamid, Norihan Abdul; Noor, Mimiwaty Mohd
2013-01-01
In this letter, we investigate the fabrication of Silicon nanostructure patterned on lightly doped (1015 cm−3) p-type silicon-on-insulator by atomic force microscope nanolithography technique. The local anodic oxidation followed by two wet etching steps, potassium hydroxide etching for silicon removal and hydrofluoric etching for oxide removal, are implemented to reach the structures. The impact of contributing parameters in oxidation such as tip materials, applying voltage on the tip, relative humidity and exposure time are studied. The effect of the etchant concentration (10% to 30% wt) of potassium hydroxide and its mixture with isopropyl alcohol (10%vol. IPA ) at different temperatures on silicon surface are expressed. For different KOH concentrations, the effect of etching with the IPA admixture and the effect of the immersing time in the etching process on the structure are investigated. The etching processes are accurately optimized by 30%wt. KOH +10%vol. IPA in appropriate time, temperature, and humidity. PMID:23776479
Powell, Jeffery Alexander; Venkatakrishnan, Krishnan; Tan, Bo
2016-01-01
We present the creation of a unique nanostructured amorphous/crystalline hybrid silicon material that exhibits surface enhanced Raman scattering (SERS) activity. This nanomaterial is an interconnected network of amorphous/crystalline nanospheroids which form a nanoweb structure; to our knowledge this material has not been previously observed nor has it been applied for use as a SERS sensing material. This material is formed using a femtosecond synthesis technique which facilitates a laser plume ion condensation formation mechanism. By fine-tuning the laser plume temperature and ion interaction mechanisms within the plume, we are able to precisely program the relative proportion of crystalline Si to amorphous Si content in the nanospheroids as well as the size distribution of individual nanospheroids and the size of Raman hotspot nanogaps. With the use of Rhodamine 6G (R6G) and Crystal Violet (CV) chemical dyes, we have been able to observe a maximum enhancement factor of 5.38 × 106 and 3.72 × 106 respectively, for the hybrid nanomaterial compared to a bulk Si wafer substrate. With the creation of a silicon-based nanomaterial capable of SERS detection of analytes, this work demonstrates a redefinition of the role of nanostructured Si from an inactive to SERS active role in nano-Raman sensing applications. PMID:26785682
NASA Astrophysics Data System (ADS)
Agati, M.; Amiard, G.; Le Borgne, V.; Castrucci, P.; Dolbec, R.; de Crescenzi, M.; El Khakani, M. A.; Boninelli, S.
2016-11-01
Ultra-thin Silicon Nanowires (SiNWs) were produced by means of an industrial inductively-coupled plasma (ICP) based process. Two families of SiNWs have been identified, namely long SiNWs (up to 2-3 micron in length) and shorter ones (~100 nm). SiNWs were found to consist of a Si core (with diameter as thin as 2 nm) and a silica shell, of which the thickness varies from 5 to 20 nm. By combining advanced transmission electron microscopy (TEM) techniques, we demonstrate that the growth of the long SiNWs occurred via the Oxide Assisted Growth (OAG) mechanism, while the Vapor Liquid Solid (VLS) mechanism is responsible for the growth of shorter ones. Energy filtered TEM analyses revealed, in some cases, the existence of chapelet-like Si nanocrystals embedded in an otherwise silica nanowire. Such nanostructures are believed to result from the exposure of some OAG SiNWs to high temperatures prevailing inside the reactor. Finally, the intense photoluminescence (PL) of these ICP-grown SiNWs in the 620-950 nm spectral range is a clear indication of the occurrence of quantum confinement. Such a PL emission is in accordance with the TEM results which revealed that the size of nanostructures are indeed below the exciton Bohr radius of silicon.
Powell, Jeffery Alexander; Venkatakrishnan, Krishnan; Tan, Bo
2016-01-20
We present the creation of a unique nanostructured amorphous/crystalline hybrid silicon material that exhibits surface enhanced Raman scattering (SERS) activity. This nanomaterial is an interconnected network of amorphous/crystalline nanospheroids which form a nanoweb structure; to our knowledge this material has not been previously observed nor has it been applied for use as a SERS sensing material. This material is formed using a femtosecond synthesis technique which facilitates a laser plume ion condensation formation mechanism. By fine-tuning the laser plume temperature and ion interaction mechanisms within the plume, we are able to precisely program the relative proportion of crystalline Si to amorphous Si content in the nanospheroids as well as the size distribution of individual nanospheroids and the size of Raman hotspot nanogaps. With the use of Rhodamine 6G (R6G) and Crystal Violet (CV) chemical dyes, we have been able to observe a maximum enhancement factor of 5.38 × 10(6) and 3.72 × 10(6) respectively, for the hybrid nanomaterial compared to a bulk Si wafer substrate. With the creation of a silicon-based nanomaterial capable of SERS detection of analytes, this work demonstrates a redefinition of the role of nanostructured Si from an inactive to SERS active role in nano-Raman sensing applications.
NASA Astrophysics Data System (ADS)
Powell, Jeffery Alexander; Venkatakrishnan, Krishnan; Tan, Bo
2016-01-01
We present the creation of a unique nanostructured amorphous/crystalline hybrid silicon material that exhibits surface enhanced Raman scattering (SERS) activity. This nanomaterial is an interconnected network of amorphous/crystalline nanospheroids which form a nanoweb structure; to our knowledge this material has not been previously observed nor has it been applied for use as a SERS sensing material. This material is formed using a femtosecond synthesis technique which facilitates a laser plume ion condensation formation mechanism. By fine-tuning the laser plume temperature and ion interaction mechanisms within the plume, we are able to precisely program the relative proportion of crystalline Si to amorphous Si content in the nanospheroids as well as the size distribution of individual nanospheroids and the size of Raman hotspot nanogaps. With the use of Rhodamine 6G (R6G) and Crystal Violet (CV) chemical dyes, we have been able to observe a maximum enhancement factor of 5.38 × 106 and 3.72 × 106 respectively, for the hybrid nanomaterial compared to a bulk Si wafer substrate. With the creation of a silicon-based nanomaterial capable of SERS detection of analytes, this work demonstrates a redefinition of the role of nanostructured Si from an inactive to SERS active role in nano-Raman sensing applications.
Optical spectra of composite silver-porous silicon (Ag-pSi) nanostructure based periodical lattice
NASA Astrophysics Data System (ADS)
Amedome Min-Dianey, Kossi Aniya; Zhang, Hao-Chun; Brohi, Ali Anwar; Yu, Haiyan; Xia, Xinlin
2018-03-01
Numerical finite differential time domain (FDTD) tools were used in this study for predicting the optical characteristics through the nanostructure of composite silver-porous silicon (Ag-pSi) based periodical lattice. This is aimed at providing an interpretation of the optical spectra at known porosity in improvement of the light manipulating efficiency through a proposed structure. With boundary conditions correctly chosen, the numerical simulation was achieved using FDTD Lumerical solutions. This was used to investigate the effect of porosity and the number of layers on the reflection, transmission and absorption characteristics through a proposed structure in a visible wavelength range of 400-750 nm. The results revealed that the higher the number of layers, the lower the reflection. Also, the reflection increases with porosity increase. The transmission characteristics were the inverse to those found in the case of reflection spectra and optimum transmission was attained at high number of layers. Also, increase in porosity results in reduced transmission. Increase in porosity as well as in the number of layers led to an increase in absorption. Therefore, absorption into such structure can be enhanced by elevating the number of layers and the degree of porosity.
Nanostructured 2D cellular materials in silicon by sidewall transfer lithography NEMS
NASA Astrophysics Data System (ADS)
Syms, Richard R. A.; Liu, Dixi; Ahmad, Munir M.
2017-07-01
Sidewall transfer lithography (STL) is demonstrated as a method for parallel fabrication of 2D nanostructured cellular solids in single-crystal silicon. The linear mechanical properties of four lattices (perfect and defected diamond; singly and doubly periodic honeycomb) with low effective Young’s moduli and effective Poisson’s ratio ranging from positive to negative are modelled using analytic theory and the matrix stiffness method with an emphasis on boundary effects. The lattices are fabricated with a minimum feature size of 100 nm and an aspect ratio of 40:1 using single- and double-level STL and deep reactive ion etching of bonded silicon-on-insulator. Nanoelectromechanical systems (NEMS) containing cellular materials are used to demonstrate stretching, bending and brittle fracture. Predicted edge effects are observed, theoretical values of Poisson’s ratio are verified and failure patterns are described.
Preparation of electrochemically active silicon nanotubes in highly ordered arrays
Grünzel, Tobias; Lee, Young Joo; Kuepper, Karsten
2013-01-01
Summary Silicon as the negative electrode material of lithium ion batteries has a very large capacity, the exploitation of which is impeded by the volume changes taking place upon electrochemical cycling. A Si electrode displaying a controlled porosity could circumvent the difficulty. In this perspective, we present a preparative method that yields ordered arrays of electrochemically competent silicon nanotubes. The method is based on the atomic layer deposition of silicon dioxide onto the pore walls of an anodic alumina template, followed by a thermal reduction with lithium vapor. This thermal reduction is quantitative, homogeneous over macroscopic samples, and it yields amorphous silicon and lithium oxide, at the exclusion of any lithium silicides. The reaction is characterized by spectroscopic ellipsometry for thin silica films, and by nuclear magnetic resonance and X-ray photoelectron spectroscopy for nanoporous samples. After removal of the lithium oxide byproduct, the silicon nanotubes can be contacted electrically. In a lithium ion electrolyte, they then display the electrochemical waves also observed for other bulk or nanostructured silicon systems. The method established here paves the way for systematic investigations of how the electrochemical properties (capacity, charge/discharge rates, cyclability) of nanoporous silicon negative lithium ion battery electrode materials depend on the geometry. PMID:24205460
Fabrication of multi-functional silicon surface by direct laser writing
NASA Astrophysics Data System (ADS)
Verma, Ashwani Kumar; Soni, R. K.
2018-05-01
We present a simple, quick and one-step methodology based on nano-second laser direct writing for the fabrication of micro-nanostructures on silicon surface. The fabricated surfaces suppress the optical reflection by multiple reflection due to light trapping effect to a much lower value than polished silicon surface. These textured surfaces offer high enhancement ability after gold nanoparticle deposition and then explored for Surface Enhanced Raman Scattering (SERS) for specific molecular detection. The effect of laser scanning line interval on optical reflection and SERS signal enhancement ability was also investigated. Our results indicate that low optical reflection substrates exhibit uniform SERS enhancement with enhancement factor of the order of 106. Furthermore, this methodology provide an alternative approach for cost-effective large area fabrication with good control over feature size.
Oxidative stress in bacteria (Pseudomonas putida) exposed to nanostructures of silicon carbide.
Borkowski, Andrzej; Szala, Mateusz; Kowalczyk, Paweł; Cłapa, Tomasz; Narożna, Dorota; Selwet, Marek
2015-09-01
Silicon carbide (SiC) nanostructures produced by combustion synthesis can cause oxidative stress in the bacterium Pseudomonas putida. The results of this study showed that SiC nanostructures damaged the cell membrane, which can lead to oxidative stress in living cells and to the loss of cell viability. As a reference, micrometric SiC was also used, which did not exhibit toxicity toward cells. Oxidative stress was studied by analyzing the activity of peroxidases, and the expression of the glucose-6-phosphate dehydrogenase gene (zwf1) using real-time PCR and northern blot techniques. Damage to nucleic acid was studied by isolating and hydrolyzing plasmids with the formamidopyrimidine [fapy]-DNA glycosylase (also known as 8-oxoguanine DNA glycosylase) (Fpg), which is able to detect damaged DNA. The level of viable microbial cells was investigated by propidium iodide and acridine orange staining. Copyright © 2015 Elsevier Ltd. All rights reserved.
NASA Astrophysics Data System (ADS)
Schmidt, B.
Ion beam techniques, including conventional broad beam ion implantation, ion beam synthesis and ion irradiation of thin layers, as well as local ion implantation with fine-focused ion beams have been applied in different fields of micro- and nanotechnology. The ion beam synthesis of nanoparticles in high-dose ion-implanted solids is explained as phase separation of nanostructures from a super-saturated solid state through precipitation and Ostwald ripening during subsequent thermal treatment of the ion-implanted samples. A special topic will be addressed to self-organization processes of nanoparticles during ion irradiation of flat and curved solid-state interfaces. As an example of silicon nanocrystal application, the fabrication of silicon nanocrystal non-volatile memories will be described. Finally, the fabrication possibilities of nanostructures, such as nanowires and chains of nanoparticles (e.g. CoSi2), by ion beam synthesis using a focused Co+ ion beam will be demonstrated and possible applications will be mentioned.
NASA Astrophysics Data System (ADS)
Bhadra, Chris M.; Werner, Marco; Baulin, Vladimir A.; Truong Khanh, Vi; Kobaisi, Mohammad Al; Nguyen, Song Ha; Balcytis, Armandas; Juodkazis, Saulius; Wang, James Y.; Mainwaring, David E.; Crawford, Russell J.; Ivanova, Elena P.
2018-06-01
One of the major challenges faced by the biomedical industry is the development of robust synthetic surfaces that can resist bacterial colonization. Much inspiration has been drawn recently from naturally occurring mechano-bactericidal surfaces such as the wings of cicada ( Psaltoda claripennis) and dragonfly ( Diplacodes bipunctata) species in fabricating their synthetic analogs. However, the bactericidal activity of nanostructured surfaces is observed in a particular range of parameters reflecting the geometry of nanostructures and surface wettability. Here, several of the nanometer-scale characteristics of black silicon (bSi) surfaces including the density and height of the nanopillars that have the potential to influence the bactericidal efficiency of these nanostructured surfaces have been investigated. The results provide important evidence that minor variations in the nanoarchitecture of substrata can substantially alter their performance as bactericidal surfaces.[Figure not available: see fulltext.
Reversible and non-reversible changes in nanostructured Si in humid atmosphere
NASA Astrophysics Data System (ADS)
Zhigalov, V.; Pyatilova, O.; Timoshenkov, S.; Gavrilov, S.
2014-12-01
Atmosphere water influence in the nanostructured silicon (NSS) was investigated by IR-spectroscopy and electron work function measurement. Long-term non-reversible dynamics of IR-spectra was found as a result of 100% humidity influence on the nanostructured silicon. It was indicated that air humidity affects on the work function. Dynamics of the electron work function consists of reversible and non-reversible components. Reversible component appears as strong anti-correlation between work function and humidity. Work function change of NSS is about 0.4 eV while the humidity changes between 0% and 100%. Reversible component can be explained by physical sorption of water molecules on the surface. Non-reversible component manifests as long-term decreasing trend of work function in humid atmosphere. Transition curve during abruptly humidity changes alters its shape. Non-reversible component can be explained by chemisorption of water.
Low energy milling method, low crystallinity alloy, and negative electrode composition
Le, Dihn B; Obrovac, Mark N; Kube, Robert Y; Landucci, James R
2012-10-16
A method of making nanostructured alloy particles includes milling a millbase in a pebble mill containing milling media. The millbase comprises: (i) silicon, and (ii) at least one of carbon or a transition metal, and wherein the nanostructured alloy particles are substantially free of crystalline domains greater than 50 nanometers in size. A method of making a negative electrode composition for a lithium ion battery including the nanostructured alloy particles is also disclosed.
NASA Astrophysics Data System (ADS)
Bhukta, Anjan; Bagarti, Trilochan; Guha, Puspendu; Ravulapalli, Sathyavathi; Satpati, Biswarup; Rakshit, Bipul; Maiti, Paramita; Parlapalli, Venkata Satyam
2017-10-01
The reconstructed vicinal (high index) silicon surfaces, such as, Si (5 5 12) composes row-like structures that can be used as templates for growing aligned nanowires. By using a sub-monolayers of Ag, prior to Au deposition on reconstructed Si (5 512) surface, intermixing of Au and Ag, enhancement of aspect ratio of bimetallic Au-Ag nanowires with tunable morphology is reported. This is attributed to a combined effect of pre-grown Ag strips as nucleation centers for incoming Au ad-atoms and anisotropic Au-Ag intermixing. To achieve optimum conditions for the growth of larger aspect ratio Au-Ag nanostructures, the growth kinetics have been studied by varying growth and annealing temperatures. At ≈400 °C, the Ag diffused into silicon substrate and the inter-diffusion found to inhibit the formation of Au-Ag bimetallic nanostructures. Controlled experiments under ultra-high vacuum condition in a molecular beam epitaxy system and in-situ scanning tunneling microscopy measurements along with ex-situ scanning transmission and secondary electron microscopy measurements have been carried out to understand the bimetallic nanostructure growth. Kinetic Monte Carlo (KMC) simulations based on kinematics of ad-atoms on an anisotropic template with a solid on solid model in which the relative ratios of binding energies (that are obtained from the Density Functional Theory) have been used and the KMC simulations results agree with the experimental observations. Advantage of having bimetallic structures as effective substrates for Surface enhanced Raman spectroscopy application is demonstrated by detecting Rhodamine 6 G (R6G) molecule at the concentration of 10-7M.
Liu, Jun; Kopold, Peter; van Aken, Peter A; Maier, Joachim; Yu, Yan
2015-08-10
Silicon is an attractive anode material in energy storage devices, as it has a ten times higher theoretical capacity than its state-of-art carbonaceous counterpart. However, the common process to synthesize silicon nanostructured electrodes is complex, costly, and energy-intensive. Three-dimensional (3D) porous silicon-based anode materials have been fabricated from natural reed leaves by calcination and magnesiothermic reduction. This sustainable and highly abundant silica source allows for facile production of 3D porous silicon with very good electrochemical performance. The obtained silicon anode retains the 3D hierarchical architecture of the reed leaf. Impurity leaching and gas release during the fabrication process leads to an interconnected porosity and the reductive treatment to an inside carbon coating. Such anodes show a remarkable Li-ion storage performance: even after 4000 cycles and at a rate of 10 C, a specific capacity of 420 mA h g(-1) is achieved. © 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
Gold-silicon nanofiber synthesized by femtosecond laser radiation for enhanced light absorptance.
Mahmood, Abdul Salam; Venkatakrishnan, Krishnan; Tan, Bo
2014-01-01
In this study, we devised a new concept for the precise nanofabrication of Au-Si fibrous nanostructures using megahertz femtosecond laser irradiation in air and atmospheric pressure conditions. The weblike fibrous nanostructures of Au thin layer on silicon substrate, which are proposed for the application of solar cells, exhibit a specific improvement of the optical properties in visible wavelength. Varying numbers of laser interaction pulses were used to control the synthesis of the nanofibrous structures. Electron microscopy analysis revealed that the nanostructures are formed due to the aggregation of polycrystalline nanoparticles of the respective constituent materials with diameters varying between 30 and 90 nm. Measurement of the reflectance through a spectroradiometer showed that the coupling of incident electromagnetic irradiation was greatly improved over the broadband wavelength range. Lower reflectance intensity was obtained with a higher number of laser pulses due to the bulk of gold nanoparticles being agglomerated by the mechanism of fusion. This forms interweaving fibrous nanostructures which reveal a certain degree of assembly. 81.05.Zx; 81.07.-b.
Gold-silicon nanofiber synthesized by femtosecond laser radiation for enhanced light absorptance
2014-01-01
In this study, we devised a new concept for the precise nanofabrication of Au-Si fibrous nanostructures using megahertz femtosecond laser irradiation in air and atmospheric pressure conditions. The weblike fibrous nanostructures of Au thin layer on silicon substrate, which are proposed for the application of solar cells, exhibit a specific improvement of the optical properties in visible wavelength. Varying numbers of laser interaction pulses were used to control the synthesis of the nanofibrous structures. Electron microscopy analysis revealed that the nanostructures are formed due to the aggregation of polycrystalline nanoparticles of the respective constituent materials with diameters varying between 30 and 90 nm. Measurement of the reflectance through a spectroradiometer showed that the coupling of incident electromagnetic irradiation was greatly improved over the broadband wavelength range. Lower reflectance intensity was obtained with a higher number of laser pulses due to the bulk of gold nanoparticles being agglomerated by the mechanism of fusion. This forms interweaving fibrous nanostructures which reveal a certain degree of assembly. PACS 81.05.Zx; 81.07.-b PMID:24940179
NASA Astrophysics Data System (ADS)
Salgado, R.; Arteaga, G. C.; Arias, J. M.
2018-04-01
Obtaining conductive polymers (CPs) for the manufacture of OLEDs, solar cells, electrochromic devices, sensors, etc., has been possible through the use of electrochemical techniques that allow obtaining films of controlled thickness with positive results in different applications. Current trends point towards the manufacture of nanomaterials, and therefore it is necessary to develop methods that allow obtaining CPs with nanostructured morphology. This is possible by using a porous template to allow the growth of the polymeric materials. However, prior and subsequent treatments are required to separate the material from the template so that it can be evaluated in the applications mentioned above. This is why mesoporous silicon oxide films (template) are essential for the synthesis of nanostructured polymers since both the template and the polymer are obtained on the electrode surface, and therefore it is not necessary to separate the material from the template. Thus, the material can be evaluated directly in the applications mentioned above. The dimensions of the resulting nanostructures will depend on the power, time and technique used for electropolymerization as well as the monomer and the surfactant of the mesoporous film.
NASA Astrophysics Data System (ADS)
Shrivastava, Megha; Kumari, Reeta; Parra, Mohammad Ramzan; Pandey, Padmini; Siddiqui, Hafsa; Haque, Fozia Z.
2017-11-01
In this report we present the successful enhancement in electroluminescence (EL) in nanostructured n-type porous silicon (PS) with an idea of embedding luminophorous Molybdenum disulfide (MoS2) quantum dots (QD's). Electrochemical anodization technique was used for the formation of PS surface and MoS2 QD's were prepared using the electrochemical route. Spin coating technique was employed for the proper incorporation of MoS2 QD's within the PS nanostructures. The crystallographic analysis was performed using X-ray diffraction (XRD), Raman and Fourier transform infrared (FT-IR) spectroscopy techniques. However, surface morphology was determined using Transmission electron microscopy (TEM) and Atomic force microscopy (AFM). The optical measurements were performed on photoluminescence (PL) spectrophotometer; additionally for electroluminescence (EL) study special arrangement of instrumental setup was made at laboratory level which provides novelty to this work. A diode prototype was made comprising Ag/MoS2:PS/Silicon/Ag for EL study. The MoS2:PS shows a remarkable concentration dependent enhancement in PL as well as in EL intensities, which paves a way to better utilize this strategy in optoelectronic device applications.
NASA Astrophysics Data System (ADS)
Gen, Masao; Kakuta, Hideo; Kamimoto, Yoshihito; Wuled Lenggoro, I.
2011-06-01
A detection method based on the surface-enhanced Raman spectroscopy (SERS)-active substrate derived from aerosol nanoparticles and a colloidal suspension for detecting organic molecules of a model analyte (a pesticide) is proposed. This approach can detect the molecules of the derived from its solution with the concentration levels of ppb. For substrate fabrication, a gas-phase method is used to directly deposit Ag nanoparticles on to a silicon substrate having pyramidal structures. By mixing the target analyte with a suspension of Ag colloids purchased in advance, clotianidin analyte on Ag colloid can exist in junctions of co-aggregated Ag colloids. Using (i) a nanostructured substrate made from aerosol nanoparticles and (ii) colloidal suspension can increase the number of activity spots.
DOE Office of Scientific and Technical Information (OSTI.GOV)
Chen, Gang; Branham, Matthew S.; Hsu, Wei-Chun
2014-09-02
This report summarizes the research activities of the Chen group at MIT over the last two years pertaining to our research effort developing and proving light-trapping designs for ultrathin crystalline silicon solar cells. We present a new world record efficiency for a sub-20-micron crystalline silicon device, as well as details on the combined photonic/electronic transport simulation we developed for photovoltaic applications.
DOE Office of Scientific and Technical Information (OSTI.GOV)
El-Atwani, Osman; Birck Nanotechnology Center, Purdue University, West Lafayette, Indiana 47907; Gonderman, Sean
We investigated the effect of silicide formation on ion-induced nanopatterning of silicon with various ultrathin metal coatings. Silicon substrates coated with 10 nm Ni, Fe, and Cu were irradiated with 200 eV argon ions at normal incidence. Real time grazing incidence small angle x-ray scattering (GISAXS) and x-ray fluorescence (XRF) were performed during the irradiation process and real time measurements revealed threshold conditions for nanopatterning of silicon at normal incidence irradiation. Three main stages of the nanopatterning process were identified. The real time GISAXS intensity of the correlated peaks in conjunction with XRF revealed that the nanostructures remain for amore » time period after the removal of the all the metal atoms from the sample depending on the binding energy of the metal silicides formed. Ex-situ XPS confirmed the removal of all metal impurities. In-situ XPS during the irradiation of Ni, Fe, and Cu coated silicon substrates at normal incidence demonstrated phase separation and the formation of different silicide phases that occur upon metal-silicon mixing. Silicide formation leads to nanostructure formation due the preferential erosion of the non-silicide regions and the weakening of the ion induced mass redistribution.« less
Superhydrophobic nanofluidic channels for enhanced electrokinetic conversion
NASA Astrophysics Data System (ADS)
Checco, Antonio; Al Hossain, Aktaruzzaman; Rahmani, Amir; Black, Charles; Doerk, Gregory; Colosqui, Carlos
2017-11-01
We present current efforts in the development of novel slit nanofluidic channels with superhydrophobic nanostructured surfaces designed to enhance hydrodynamic conductivity and improve selective transport and electrokinetic energy conversion efficiencies (mechanical-electrical energy conversion). The nanochannels are fabricated on silicon wafers using UV lithography, and their internal surface is patterned with conical nanostructures (feature size and spacing 30 nm) defined by block copolymer self-assembly and plasma etching. These nanostructures are rendered superhydrophobic by passivation with a hydrophobic silane monolayer. We experimentally characterize hydrodynamic conductivity, effective zeta potentials, and eletrokinetic flows for the patterned nanochannels, comparing against control channels with bare surfaces. Experimental observations are rationalized using both continuum-based modeling and molecular dynamics simulations. Scientific and technical knowledge produced by this work is particularly relevant for sustainable energy conversion and storage, separation processes and water treatment using nanoporous materials. The ONR Contract # N000141613178 and NSF-CBET award# 1605809.
Selective growth of palladium and titanium dioxide nanostructures inside carbon nanotube membranes
2012-01-01
Hybrid nanostructured arrays based on carbon nanotubes (CNT) and palladium or titanium dioxide materials have been synthesized using self-supported and silicon-supported anodized aluminum oxide (AAO) as nanoporous template. It is well demonstrated that carbon nanotubes can be grown using these membranes and hydrocarbon precursors that decompose at temperatures closer to 600°C without the use of a metal catalyst. In this process, carbonic fragments condensate to form stacked graphitic sheets, which adopt the shape of the pores, yielding from these moulds' multi-walled carbon nanotubes. After this process, the ends of the tubes remain open and accessible to other substances, whereas the outer walls are protected by the alumina. Taking advantage of this fact, we have performed the synthesis of palladium and titanium dioxide nanostructures selectively inside carbon nanotubes using these CNT-AAO membranes as nanoreactors. PMID:22731888
Simultaneous Purification and Perforation of Low-Grade Si Sources for Lithium-Ion Battery Anode.
Jin, Yan; Zhang, Su; Zhu, Bin; Tan, Yingling; Hu, Xiaozhen; Zong, Linqi; Zhu, Jia
2015-11-11
Silicon is regarded as one of the most promising candidates for lithium-ion battery anodes because of its abundance and high theoretical capacity. Various silicon nanostructures have been heavily investigated to improve electrochemical performance by addressing issues related to structure fracture and unstable solid-electrolyte interphase (SEI). However, to further enable widespread applications, scalable and cost-effective processes need to be developed to produce these nanostructures at large quantity with finely controlled structures and morphologies. In this study, we develop a scalable and low cost process to produce porous silicon directly from low grade silicon through ball-milling and modified metal-assisted chemical etching. The morphology of porous silicon can be drastically changed from porous-network to nanowire-array by adjusting the component in reaction solutions. Meanwhile, this perforation process can also effectively remove the impurities and, therefore, increase Si purity (up to 99.4%) significantly from low-grade and low-cost ferrosilicon (purity of 83.4%) sources. The electrochemical examinations indicate that these porous silicon structures with carbon treatment can deliver a stable capacity of 1287 mAh g(-1) over 100 cycles at a current density of 2 A g(-1). This type of purified porous silicon with finely controlled morphology, produced by a scalable and cost-effective fabrication process, can also serve as promising candidates for many other energy applications, such as thermoelectrics and solar energy conversion devices.
Monolayer Contact Doping of Silicon Surfaces and Nanowires Using Organophosphorus Compounds
Hazut, Ori; Agarwala, Arunava; Subramani, Thangavel; Waichman, Sharon; Yerushalmi, Roie
2013-01-01
Monolayer Contact Doping (MLCD) is a simple method for doping of surfaces and nanostructures1. MLCD results in the formation of highly controlled, ultra shallow and sharp doping profiles at the nanometer scale. In MLCD process the dopant source is a monolayer containing dopant atoms. In this article a detailed procedure for surface doping of silicon substrate as well as silicon nanowires is demonstrated. Phosphorus dopant source was formed using tetraethyl methylenediphosphonate monolayer on a silicon substrate. This monolayer containing substrate was brought to contact with a pristine intrinsic silicon target substrate and annealed while in contact. Sheet resistance of the target substrate was measured using 4 point probe. Intrinsic silicon nanowires were synthesized by chemical vapor deposition (CVD) process using a vapor-liquid-solid (VLS) mechanism; gold nanoparticles were used as catalyst for nanowire growth. The nanowires were suspended in ethanol by mild sonication. This suspension was used to dropcast the nanowires on silicon substrate with a silicon nitride dielectric top layer. These nanowires were doped with phosphorus in similar manner as used for the intrinsic silicon wafer. Standard photolithography process was used to fabricate metal electrodes for the formation of nanowire based field effect transistor (NW-FET). The electrical properties of a representative nanowire device were measured by a semiconductor device analyzer and a probe station. PMID:24326774
Inverted Silicon Nanopencil Array Solar Cells with Enhanced Contact Structures.
Liang, Xiaoguang; Shu, Lei; Lin, Hao; Fang, Ming; Zhang, Heng; Dong, Guofa; Yip, SenPo; Xiu, Fei; Ho, Johnny C
2016-09-27
Although three-dimensional nanostructured solar cells have attracted extensive research attention due to their superior broadband and omnidirectional light-harvesting properties, majority of them are still suffered from complicated fabrication processes as well as disappointed photovoltaic performances. Here, we employed our newly-developed, low-cost and simple wet anisotropic etching to fabricate hierarchical silicon nanostructured arrays with different solar cell contact design, followed by systematic investigations of their photovoltaic characteristics. Specifically, nano-arrays with the tapered tips (e.g. inverted nanopencils) are found to enable the more conformal top electrode deposition directly onto the nanostructures for better series and shunt conductance, but its insufficient film coverage at the basal plane would still restrict the charge carrier collection. In contrast, the low-platform contact design facilitates a substantial photovoltaic device performance enhancement of ~24%, as compared to the one of conventional top electrode design, due to the shortened current path and improved lateral conductance for the minimized carrier recombination and series resistance. This enhanced contact structure can not only maintain excellent photon-trapping behaviors of nanostructures, but also help to eliminate adverse impacts of these tapered nano-morphological features on the contact resistance, providing further insight into design consideration in optimizing the contact geometry for high-performance nanostructured photovoltaic devices.
Inverted Silicon Nanopencil Array Solar Cells with Enhanced Contact Structures
Liang, Xiaoguang; Shu, Lei; Lin, Hao; Fang, Ming; Zhang, Heng; Dong, Guofa; Yip, SenPo; Xiu, Fei; Ho, Johnny C.
2016-01-01
Although three-dimensional nanostructured solar cells have attracted extensive research attention due to their superior broadband and omnidirectional light-harvesting properties, majority of them are still suffered from complicated fabrication processes as well as disappointed photovoltaic performances. Here, we employed our newly-developed, low-cost and simple wet anisotropic etching to fabricate hierarchical silicon nanostructured arrays with different solar cell contact design, followed by systematic investigations of their photovoltaic characteristics. Specifically, nano-arrays with the tapered tips (e.g. inverted nanopencils) are found to enable the more conformal top electrode deposition directly onto the nanostructures for better series and shunt conductance, but its insufficient film coverage at the basal plane would still restrict the charge carrier collection. In contrast, the low-platform contact design facilitates a substantial photovoltaic device performance enhancement of ~24%, as compared to the one of conventional top electrode design, due to the shortened current path and improved lateral conductance for the minimized carrier recombination and series resistance. This enhanced contact structure can not only maintain excellent photon-trapping behaviors of nanostructures, but also help to eliminate adverse impacts of these tapered nano-morphological features on the contact resistance, providing further insight into design consideration in optimizing the contact geometry for high-performance nanostructured photovoltaic devices. PMID:27671709
Plasmonic and silicon spherical nanoparticle antireflective coatings
NASA Astrophysics Data System (ADS)
Baryshnikova, K. V.; Petrov, M. I.; Babicheva, V. E.; Belov, P. A.
2016-03-01
Over the last decade, plasmonic antireflecting nanostructures have been extensively studied to be utilized in various optical and optoelectronic systems such as lenses, solar cells, photodetectors, and others. The growing interest to all-dielectric photonics as an alternative optical technology along with plasmonics motivates us to compare antireflective properties of plasmonic and all-dielectric nanoparticle coatings based on silver and crystalline silicon respectively. Our simulation results for spherical nanoparticles array on top of amorphous silicon show that both silicon and silver coatings demonstrate strong antireflective properties in the visible spectral range. For the first time, we show that zero reflectance from the structure with silicon coatings originates from the destructive interference of electric- and magnetic-dipole responses of nanoparticle array with the wave reflected from the substrate, and we refer to this reflection suppression as substrate-mediated Kerker effect. We theoretically compare the silicon and silver coating effectiveness for the thin-film photovoltaic applications. Silver nanoparticles can be more efficient, enabling up to 30% increase of the overall absorbance in semiconductor layer. Nevertheless, silicon coatings allow up to 64% absorbance increase in the narrow band spectral range because of the substrate-mediated Kerker effect, and band position can be effectively tuned by varying the nanoparticles sizes.
Plasmonic and silicon spherical nanoparticle antireflective coatings
Baryshnikova, K. V.; Petrov, M. I.; Babicheva, V. E.; Belov, P. A.
2016-01-01
Over the last decade, plasmonic antireflecting nanostructures have been extensively studied to be utilized in various optical and optoelectronic systems such as lenses, solar cells, photodetectors, and others. The growing interest to all-dielectric photonics as an alternative optical technology along with plasmonics motivates us to compare antireflective properties of plasmonic and all-dielectric nanoparticle coatings based on silver and crystalline silicon respectively. Our simulation results for spherical nanoparticles array on top of amorphous silicon show that both silicon and silver coatings demonstrate strong antireflective properties in the visible spectral range. For the first time, we show that zero reflectance from the structure with silicon coatings originates from the destructive interference of electric- and magnetic-dipole responses of nanoparticle array with the wave reflected from the substrate, and we refer to this reflection suppression as substrate-mediated Kerker effect. We theoretically compare the silicon and silver coating effectiveness for the thin-film photovoltaic applications. Silver nanoparticles can be more efficient, enabling up to 30% increase of the overall absorbance in semiconductor layer. Nevertheless, silicon coatings allow up to 64% absorbance increase in the narrow band spectral range because of the substrate-mediated Kerker effect, and band position can be effectively tuned by varying the nanoparticles sizes. PMID:26926602
The dual role of silver during silicon etching in HF solution.
Abouda-Lachiheb, Manel; Nafie, Nesma; Bouaicha, Mongi
2012-08-13
It was reported that during silicon etching, silver was subjected to have a controversial role. Some researchers debate that silver protects silicon, and, at the same time, other ones confirm that silver catalyzes silicon underneath. In this paper, we give experimental results arguing the dual role that silver has during the formation of silicon nanostructures. We give a proof that the role of silver depends on the experimental details and the intrinsic properties of silver during its deposition on the silicon wafer. Through our investigations, we tracked the silver particles that indicated which mechanism is involved. Characterizations of the prepared samples were made using a scanning electron microscope.
Gabrielyan, Nare; Saranti, Konstantina; Manjunatha, Krishna Nama; Paul, Shashi
2013-02-15
This paper represents the lowest growth temperature for silicon nano-wires (SiNWs) via a vapour-liquid-solid method, which has ever been reported in the literature. The nano-wires were grown using plasma-enhanced chemical vapour deposition technique at temperatures as low as 150°C using gallium as the catalyst. This study investigates the structure and the size of the grown silicon nano-structure as functions of growth temperature and catalyst layer thickness. Moreover, the choice of the growth temperature determines the thickness of the catalyst layer to be used.The electrical and optical characteristics of the nano-wires were tested by incorporating them in photovoltaic solar cells, two terminal bistable memory devices and Schottky diode. With further optimisation of the growth parameters, SiNWs, grown by our method, have promising future for incorporation into high performance electronic and optical devices.
2013-01-01
This paper represents the lowest growth temperature for silicon nano-wires (SiNWs) via a vapour-liquid–solid method, which has ever been reported in the literature. The nano-wires were grown using plasma-enhanced chemical vapour deposition technique at temperatures as low as 150°C using gallium as the catalyst. This study investigates the structure and the size of the grown silicon nano-structure as functions of growth temperature and catalyst layer thickness. Moreover, the choice of the growth temperature determines the thickness of the catalyst layer to be used. The electrical and optical characteristics of the nano-wires were tested by incorporating them in photovoltaic solar cells, two terminal bistable memory devices and Schottky diode. With further optimisation of the growth parameters, SiNWs, grown by our method, have promising future for incorporation into high performance electronic and optical devices. PMID:23413969
Lu, Xiaobin; Yan, Qin; Ma, Yinzhou; Guo, Xin; Xiao, Shou-Jun
2016-01-01
Block copolymer nanolithography has attracted enormous interest in chip technologies, such as integrated silicon chips and biochips, due to its large-scale and mass production of uniform patterns. We further modified this technology to grow embossed nanodots, nanorods, and nanofingerprints of polymer brushes on silicon from their corresponding wet-etched nanostructures covered with pendent SiHx (X = 1–3) species. Atomic force microscopy (AFM) was used to image the topomorphologies, and multiple transmission-reflection infrared spectroscopy (MTR-IR) was used to monitor the surface molecular films in each step for the sequential stepwise reactions. In addition, two layers of polymethacrylic acid (PMAA) brush nanodots were observed, which were attributed to the circumferential convergence growth and the diffusion-limited growth of the polymer brushes. The pH response of PMAA nanodots in the same region was investigated by AFM from pH 3.0 to 9.0. PMID:26841692
NASA Astrophysics Data System (ADS)
Lu, Xiaobin; Yan, Qin; Ma, Yinzhou; Guo, Xin; Xiao, Shou-Jun
2016-02-01
Block copolymer nanolithography has attracted enormous interest in chip technologies, such as integrated silicon chips and biochips, due to its large-scale and mass production of uniform patterns. We further modified this technology to grow embossed nanodots, nanorods, and nanofingerprints of polymer brushes on silicon from their corresponding wet-etched nanostructures covered with pendent SiHx (X = 1-3) species. Atomic force microscopy (AFM) was used to image the topomorphologies, and multiple transmission-reflection infrared spectroscopy (MTR-IR) was used to monitor the surface molecular films in each step for the sequential stepwise reactions. In addition, two layers of polymethacrylic acid (PMAA) brush nanodots were observed, which were attributed to the circumferential convergence growth and the diffusion-limited growth of the polymer brushes. The pH response of PMAA nanodots in the same region was investigated by AFM from pH 3.0 to 9.0.
Advances and challenges in the field of plasma polymer nanoparticles
Pleskunov, Pavel; Nikitin, Daniil; Titov, Valerii; Shelemin, Artem; Vaidulych, Mykhailo; Kuzminova, Anna; Solař, Pavel; Hanuš, Jan; Kousal, Jaroslav; Kylián, Ondřej; Slavínská, Danka; Biederman, Hynek
2017-01-01
This contribution reviews plasma polymer nanoparticles produced by gas aggregation cluster sources either via plasma polymerization of volatile monomers or via radio frequency (RF) magnetron sputtering of conventional polymers. The formation of hydrocarbon, fluorocarbon, silicon- and nitrogen-containing plasma polymer nanoparticles as well as core@shell nanoparticles based on plasma polymers is discussed with a focus on the development of novel nanostructured surfaces. PMID:29046847
Advances and challenges in the field of plasma polymer nanoparticles.
Choukourov, Andrei; Pleskunov, Pavel; Nikitin, Daniil; Titov, Valerii; Shelemin, Artem; Vaidulych, Mykhailo; Kuzminova, Anna; Solař, Pavel; Hanuš, Jan; Kousal, Jaroslav; Kylián, Ondřej; Slavínská, Danka; Biederman, Hynek
2017-01-01
This contribution reviews plasma polymer nanoparticles produced by gas aggregation cluster sources either via plasma polymerization of volatile monomers or via radio frequency (RF) magnetron sputtering of conventional polymers. The formation of hydrocarbon, fluorocarbon, silicon- and nitrogen-containing plasma polymer nanoparticles as well as core@shell nanoparticles based on plasma polymers is discussed with a focus on the development of novel nanostructured surfaces.
Nakamura, Yoshiaki
2018-01-01
The design and fabrication of nanostructured materials to control both thermal and electrical properties are demonstrated for high-performance thermoelectric conversion. We have focused on silicon (Si) because it is an environmentally friendly and ubiquitous element. High bulk thermal conductivity of Si limits its potential as a thermoelectric material. The thermal conductivity of Si has been reduced by introducing grains, or wires, yet a further reduction is required while retaining a high electrical conductivity. We have designed two different nanostructures for this purpose. One structure is connected Si nanodots (NDs) with the same crystal orientation. The phonons scattering at the interfaces of these NDs occurred and it depended on the ND size. As a result of phonon scattering, the thermal conductivity of this nanostructured material was below/close to the amorphous limit. The other structure is Si films containing epitaxially grown Ge NDs. The Si layer imparted high electrical conductivity, while the Ge NDs served as phonon scattering bodies reducing thermal conductivity drastically. This work gives a methodology for the independent control of electron and phonon transport using nanostructured materials. This can bring the realization of thermoelectric Si-based materials that are compatible with large scale integrated circuit processing technologies.
Kittler, M; Yu, X; Mchedlidze, T; Arguirov, T; Vyvenko, O F; Seifert, W; Reiche, M; Wilhelm, T; Seibt, M; Voss, O; Wolff, A; Fritzsche, W
2007-06-01
Well-controlled fabrication of dislocation networks in Si using direct wafer bonding opens broad possibilities for nanotechnology applications. Concepts of dislocation-network-based light emitters, manipulators of biomolecules, gettering and insulating layers, and three-dimensional buried conductive channels are presented and discussed. A prototype of a Si-based light emitter working at a wavelength of about 1.5 microm with an efficiency potential estimated at 1% is demonstrated.
NASA Astrophysics Data System (ADS)
Liang, Jiran; Li, Peng; Song, Xiaolong; Zhou, Liwei
2017-12-01
We demonstrated a visible and near-infrared light tunable photonic nanostructure, which is composed of vanadium dioxide (VO2) thin film and silicon dioxide (SiO2) ordered nanosphere arrays. The vanadium films were sputtered on two-dimensional (2D) SiO2 sphere arrays. VO2 thin films were prepared by rapid thermal annealing (RTA) method with different oxygen flow rates. The close-packed VO2 shell formed a continuous surface, the composition of VO2 films in the structure changed when the oxygen flow rates increased. The 2D VO2/SiO2 composite photonic crystal structure exhibited transmittance trough tunability and near-infrared (NIR) transmittance modulation. When the oxygen flow rate increased from 3 slpm to 4 slpm, the largest transmittance trough can be regulated from 904 to 929 nm at low temperature, the transmittance troughs also appear blue shift when the VO2 phase changes from insulator to metal. The composite nanostructure based on VO2 films showed visible transmittance tunability, which would provide insights into the glass color changing in smart windows.
Jia, Yi; Cao, Anyuan; Kang, Feiyu; Li, Peixu; Gui, Xuchun; Zhang, Luhui; Shi, Enzheng; Wei, Jinquan; Wang, Kunlin; Zhu, Hongwei; Wu, Dehai
2012-06-21
Deposition of nanostructures such as carbon nanotubes on Si wafers to make heterojunction structures is a promising route toward high efficiency solar cells with reduced cost. Here, we show a significant enhancement in the cell characteristics and power conversion efficiency by growing a silicon oxide layer at the interface between the nanotube film and Si substrate. The cell efficiency increases steadily from 0.5% without interfacial oxide to 8.8% with an optimal oxide thickness of about 1 nm. This systematic study reveals that formation of an oxide layer switches charge transport from thermionic emission to a mixture of thermionic emission and tunneling and improves overall diode properties, which are critical factors for tailoring the cell behavior. By controlled formation and removal of interfacial oxide, we demonstrate oscillation of the cell parameters between two extreme states, where the cell efficiency can be reversibly altered by a factor of 500. Our results suggest that the oxide layer plays an important role in Si-based photovoltaics, and it might be utilized to tune the cell performance in various nanostructure-Si heterojunction structures.
Self-assembled hierarchical nanostructures for high-efficiency porous photonic crystals.
Passoni, Luca; Criante, Luigino; Fumagalli, Francesco; Scotognella, Francesco; Lanzani, Guglielmo; Di Fonzo, Fabio
2014-12-23
The nanoscale modulation of material properties such as porosity and morphology is used in the natural world to mold the flow of light and to obtain structural colors. The ability to mimic these strategies while adding technological functionality has the potential to open up a broad array of applications. Porous photonic crystals are one such technological candidate, but have typically underachieved in terms of available materials, structural and optical quality, compatibility with different substrates (e.g., silicon, flexible organics), and scalability. We report here an alternative fabrication method based on the bottom-up self-assembly of elementary building blocks from the gas phase into high surface area photonic hierarchical nanostructures at room temperature. Periodic refractive index modulation is achieved by stacking layers with different nanoarchitectures. High-efficiency porous Bragg reflectors are successfully fabricated with sub-micrometer thick films on glass, silicon, and flexible substrates. High diffraction efficiency broadband mirrors (R≈1), opto-fluidic switches, and arrays of photonic crystal pixels with size<10 μm are demonstrated. Possible applications in filtering, sensing, electro-optical modulation, solar cells, and photocatalysis are envisioned.
NASA Astrophysics Data System (ADS)
Prachachet, R.; Samransuksamer, B.; Horprathum, M.; Eiamchai, P.; Limwichean, S.; Chananonnawathorn, C.; Lertvanithphol, T.; Muthitamongkol, P.; Boonruang, S.; Buranasiri, P.
2018-02-01
Fabricated omnidirectional anti-reflection nanostructure films as a one of the promising alternative solar cell applications have attracted enormous scientific and industrial research benefits to their broadband, effective over a wide range of incident angles, lithography-free and high-throughput process. Recently, the nanostructure SiO2 film was the most inclusive study on anti-reflection with omnidirectional and broadband characteristics. In this work, the three-dimensional silicon dioxide (SiO2) nanostructured thin film with different morphologies including vertical align, slant, spiral and thin films were fabricated by electron beam evaporation with glancing angle deposition (GLAD) on the glass slide and silicon wafer substrate. The morphological of the prepared samples were characterized by field-emission scanning electron microscope (FE-SEM) and high-resolution transmission electron microscope (HRTEM). The transmission, omnidirectional and birefringence property of the nanostructure SiO2 films were investigated by UV-Vis-NIR spectrophotometer and variable angle spectroscopic ellipsometer (VASE). The spectrophotometer measurement was performed at normal incident angle and a full spectral range of 200 - 2000 nm. The angle dependent transmission measurements were investigated by rotating the specimen, with incidence angle defined relative to the surface normal of the prepared samples. This study demonstrates that the obtained SiO2 nanostructure film coated on glass slide substrate exhibits a higher transmission was 93% at normal incident angle. In addition, transmission measurement in visible wavelength and wide incident angles -80 to 80 were increased in comparison with the SiO2 thin film and glass slide substrate due to the transition in the refractive index profile from air to the nanostructure layer that improve the antireflection characteristics. The results clearly showed the enhanced omnidirectional and broadband characteristic of the three dimensional SiO2 nanostructure film coating.
Nanostructured silicon for thermoelectric
NASA Astrophysics Data System (ADS)
Stranz, A.; Kähler, J.; Waag, A.; Peiner, E.
2011-06-01
Thermoelectric modules convert thermal energy into electrical energy and vice versa. At present bismuth telluride is the most widely commercial used material for thermoelectric energy conversion. There are many applications where bismuth telluride modules are installed, mainly for refrigeration. However, bismuth telluride as material for energy generation in large scale has some disadvantages. Its availability is limited, it is hot stable at higher temperatures (>250°C) and manufacturing cost is relatively high. An alternative material for energy conversion in the future could be silicon. The technological processing of silicon is well advanced due to the rapid development of microelectronics in recent years. Silicon is largely available and environmentally friendly. The operating temperature of silicon thermoelectric generators can be much higher than of bismuth telluride. Today silicon is rarely used as a thermoelectric material because of its high thermal conductivity. In order to use silicon as an efficient thermoelectric material, it is necessary to reduce its thermal conductivity, while maintaining high electrical conductivity and high Seebeck coefficient. This can be done by nanostructuring into arrays of pillars. Fabrication of silicon pillars using ICP-cryogenic dry etching (Inductive Coupled Plasma) will be described. Their uniform height of the pillars allows simultaneous connecting of all pillars of an array. The pillars have diameters down to 180 nm and their height was selected between 1 micron and 10 microns. Measurement of electrical resistance of single silicon pillars will be presented which is done in a scanning electron microscope (SEM) equipped with nanomanipulators. Furthermore, measurement of thermal conductivity of single pillars with different diameters using the 3ω method will be shown.
Nanostructured silicon nitride from wheat and rice husks
NASA Astrophysics Data System (ADS)
Qadri, S. B.; Rath, B. B.; Gorzkowski, E. P.; Wollmershauser, J. A.; Feng, C. R.
2016-04-01
Nanoparticles, submicron-diameter tubes, and rods of Si3N4 were synthesized from the thermal treatment of wheat and rice husks at temperatures at and above 1300 °C in a nitrogen atmosphere. The whole pattern Rietveld analysis of the observed diffraction data from treatments at 1300 °C showed the formation of only hexagonal α-phase of Si3N4 with an R-factor of 1%, whereas samples treated at 1400 °C and above showed both α- and β-phases with an R-factor of 2%. Transmission electron microscopy showed the presence of tubes, rods, and nanoparticles of Si3N4. In a two-step process, where pure SiC was produced first from rice or wheat husk in an argon atmosphere and subsequently treated in a nitrogen atmosphere at 1450 °C, a nanostructured composite material having α- and β-phases of Si3N4 combined with cubic phase of SiC was formed. The thermodynamics of the formation of silicon nitride is discussed in terms of the solid state reaction between organic matter (silica content), which is inherently present in the wheat and rice husks, with the nitrogen from the furnace atmosphere. Nanostructures of silicon nitride formed by a single direct reaction or their composites with SiC formed in a two-step process of agricultural byproducts provide an uncomplicated sustainable synthesis route for silicon nitride used in mechanical, biotechnology, and electro-optic nanotechnology applications.
Highly Sensitive Bulk Silicon Chemical Sensors with Sub-5 nm Thin Charge Inversion Layers.
Fahad, Hossain M; Gupta, Niharika; Han, Rui; Desai, Sujay B; Javey, Ali
2018-03-27
There is an increasing demand for mass-producible, low-power gas sensors in a wide variety of industrial and consumer applications. Here, we report chemical-sensitive field-effect-transistors (CS-FETs) based on bulk silicon wafers, wherein an electrostatically confined sub-5 nm thin charge inversion layer is modulated by chemical exposure to achieve a high-sensitivity gas-sensing platform. Using hydrogen sensing as a "litmus" test, we demonstrate large sensor responses (>1000%) to 0.5% H 2 gas, with fast response (<60 s) and recovery times (<120 s) at room temperature and low power (<50 μW). On the basis of these performance metrics as well as standardized benchmarking, we show that bulk silicon CS-FETs offer similar or better sensing performance compared to emerging nanostructures semiconductors while providing a highly scalable and manufacturable platform.
Huang, Yi-Fan; Chattopadhyay, Surojit; Jen, Yi-Jun; Peng, Cheng-Yu; Liu, Tze-An; Hsu, Yu-Kuei; Pan, Ci-Ling; Lo, Hung-Chun; Hsu, Chih-Hsun; Chang, Yuan-Huei; Lee, Chih-Shan; Chen, Kuei-Hsien; Chen, Li-Chyong
2007-12-01
Nature routinely produces nanostructured surfaces with useful properties, such as the self-cleaning lotus leaf, the colour of the butterfly wing, the photoreceptor in brittlestar and the anti-reflection observed in the moth eye. Scientists and engineers have been able to mimic some of these natural structures in the laboratory and in real-world applications. Here, we report a simple aperiodic array of silicon nanotips on a 6-inch wafer with a sub-wavelength structure that can suppress the reflection of light at a range of wavelengths from the ultraviolet, through the visible part of the spectrum, to the terahertz region. Reflection is suppressed for a wide range of angles of incidence and for both s- and p-polarized light. The antireflection properties of the silicon result from changes in the refractive index caused by variations in the height of the silicon nanotips, and can be simulated with models that have been used to explain the low reflection from moth eyes. The improved anti-reflection properties of the surfaces could have applications in renewable energy and electro-optical devices for the military.
DOE Office of Scientific and Technical Information (OSTI.GOV)
Saxena, Shailendra K., E-mail: phd1211512@iiti.ac.in; Sahu, Gayatri; Sagdeo, Pankaj R.
Quantum confinement effect has been studied in cheese like silicon nano-structures (Ch-SiNS) fabricated by metal induced chemical etching using different etching times. Scanning electron microscopy is used for the morphological study of these Ch-SiNS. A visible photoluminescence (PL) emission is observed from the samples under UV excitation at room temperature due to quantum confinement effect. The average size of Silicon Nanostructures (SiNS) present in the samples has been estimated by bond polarizability model using Raman Spectroscopy from the red-shift observed from SiNSs as compared to its bulk counterpart. The sizes of SiNS present in the samples decreases as etching timemore » increase from 45 to 75 mintunes.« less
Lattice dynamics and thermoelectric properties of nanocrystalline silicon-germanium alloys
Claudio, Tania; Stein, Niklas; Peterman, Nils; ...
2015-10-26
The lattice dynamics and thermoelectric properties of sintered phosphorus-doped nanostructured silicon- germanium alloys obtained by gas-phase synthesis were studied. Measurements of the density of phonon states by inelastic neutron scattering were combined with measurements of the elastic constants and the low- temperature heat capacity. A strong influence of nanostructuring and alloying on the lattice dynamics was observed. The thermoelectric transport properties of samples with different doping as well as samples sintered at different temperature were characterized between room temperature and 1000C. A peak figure of merit zT = 0:88 at 900C is observed and comparatively insensitive to the aforementioned param-more » eter variations.« less
Non-Markovian electron dynamics in nanostructures coupled to dissipative contacts
NASA Astrophysics Data System (ADS)
Novakovic, B.; Knezevic, I.
2013-02-01
In quasiballistic semiconductor nanostructures, carrier exchange between the active region and dissipative contacts is the mechanism that governs relaxation. In this paper, we present a theoretical treatment of transient quantum transport in quasiballistic semiconductor nanostructures, which is based on the open system theory and valid on timescales much longer than the characteristic relaxation time in the contacts. The approach relies on a model interaction between the current-limiting active region and the contacts, given in the scattering-state basis. We derive a non-Markovian master equation for the irreversible evolution of the active region's many-body statistical operator by coarse-graining the exact dynamical map over the contact relaxation time. In order to obtain the response quantities of a nanostructure under bias, such as the potential and the charge and current densities, the non-Markovian master equation must be solved numerically together with the Schr\\"{o}dinger, Poisson, and continuity equations. We discuss how to numerically solve this coupled system of equations and illustrate the approach on the example of a silicon nin diode.
Tak, Manvi; Gupta, Vinay; Tomar, Monika
2014-09-15
Zinc oxide (ZnO) nanostructures possessing flower-like morphology have been synthesised onto platinized silicon substrate by simple and economical hydrothermal method. The interaction of physically immobilized single stranded thiolated DNA (ss th-DNA) probe of N. meningitides onto the nanostructured ZnO (ZNF) matrix surface have been investigated using cyclic voltammetry (CV) and electrochemical impeadance spectroscopy (EIS). The electrochemical sensing response behaviour of the DNA bioelectrode (ss th-DNA/ZNF/Pt/Si) has been studied by both differential pulse voltammetric (DPV) as well as impedimetric techniques. The fabricated DNA biosensor can quantify wide range of the complementary target ss th-DNA in the range 5-240 ng μl(-1) with good linearity (R=0.98), high sensitivity (168.64 μA ng(-1) μl cm(-2)) and low detection limit of about 5 ng μl(-1). Results emphasise that the fabricated flower-like ZnO nanostructures offer a useful platform for the immobilization of DNA molecules and could be exploited for efficient detection of complementary target single stranded DNA corresponding to N. meningitides. Copyright © 2014 Elsevier B.V. All rights reserved.
NASA Astrophysics Data System (ADS)
Su, Ming
The advent of nanomaterials with enhanced properties and the means to pattern them in a controlled fashion have paved the way to construct miniaturized sensors for improved detection. However it remains a challenge for the traditional methods to create such sensors and sensor arrays. Dip pen nanolithography (DPN) can form nanostructures on a substrate by controlling the transfer of molecule inks. However, previous DPN can not pattern solid materials on insulating surfaces, which are necessary to form functional electronic devices. In the dissertation, the concept of reactive precursor inks for DPN is developed for the generation of solid functional nanostructures of the following materials: organic molecule, sol-gel material, and conducting polymer. First, the covalent bonding is unnecessary for DPN as shown in the colored ink DPN; therefore the numbers of molecules that can be patterned is extended beyond thiol or thiolated molecules. Subsequently, a reactive precursor strategy (sol) is developed to pattern inorganic or organic/inorganic composite nanostructures on silicon based substrates. The method works by hydrolysis of metal precursors in the water meniscus and allows the preparation of solid structures with controlled geometry beyond the individual molecule level. Then the SnO 2 nanostructures patterned between the gaps of electrodes are tested as gas sensors. Proof-of-concept experiments are demonstrated on miniaturized sensors that show fast response and recovery to certain gases. Furthermore, an eight-unit sensor array is fabricated on a chip using SnO2 sols that are doped with different metals. The multiplexed device can recognize different gases by comparing the response patterns with the reference patterns of known gases generated on the same array. At last, the idea of precursor ink for DPN is extended to construct conducting polymer based devices. By using an acid promoted polymerization approach, conducting polymers are patterned on silicon dioxide substrates. The patterned organic solids response to light and behave as miniaturized photo-detectors. The microstructures are studied using microscopic and spectroscopic techniques.
Agati, M.; Amiard, G.; Le Borgne, V.; Castrucci, P.; Dolbec, R.; De Crescenzi, M.; El Khakani, M. A.; Boninelli, S.
2016-01-01
Ultra-thin Silicon Nanowires (SiNWs) were produced by means of an industrial inductively-coupled plasma (ICP) based process. Two families of SiNWs have been identified, namely long SiNWs (up to 2–3 micron in length) and shorter ones (~100 nm). SiNWs were found to consist of a Si core (with diameter as thin as 2 nm) and a silica shell, of which the thickness varies from 5 to 20 nm. By combining advanced transmission electron microscopy (TEM) techniques, we demonstrate that the growth of the long SiNWs occurred via the Oxide Assisted Growth (OAG) mechanism, while the Vapor Liquid Solid (VLS) mechanism is responsible for the growth of shorter ones. Energy filtered TEM analyses revealed, in some cases, the existence of chapelet-like Si nanocrystals embedded in an otherwise silica nanowire. Such nanostructures are believed to result from the exposure of some OAG SiNWs to high temperatures prevailing inside the reactor. Finally, the intense photoluminescence (PL) of these ICP-grown SiNWs in the 620–950 nm spectral range is a clear indication of the occurrence of quantum confinement. Such a PL emission is in accordance with the TEM results which revealed that the size of nanostructures are indeed below the exciton Bohr radius of silicon. PMID:27874057
Hu, Kexiang; Ding, Enjie; Wangyang, Peihua; Wang, Qingkang
2016-06-01
The electromagnetic spectrum and the photoelectric conversion efficiency of the silicon hexagonal nanoconical hole (SiHNH) arrays based solar cells is systematically analyzed according to Rigorous Coupled Wave Analysis (RCWA) and Modal Transmission Line (MTL) theory. An ultimate efficiency of the optimized SiHNH arrays based solar cell is up to 31.92% in consideration of the absorption spectrum, 4.52% higher than that of silicon hexagonal nanoconical frustum (SiHNF) arrays. The absorption enhancement of the SiHNH arrays is due to its lower reflectance and more supported guided-mode resonances, and the enhanced ultimate efficiency is insensitive to bottom diameter (D(bot)) of nanoconical hole and the incident angle. The result provides an additional guideline for the nanostructure surface texturing fabrication design for photovoltaic applications.
NASA Astrophysics Data System (ADS)
Moumni, Besma; Jaballah, Abdelkader Ben
2017-12-01
Silicon porosification by silver assisted chemical etching (Ag-ACE) for a short range of H2O2 concentration is reported. We experimentally show that porous silicon (PSi) is obtained for 1% H2O2, whereas silicon nanowires (SiNWs) appeared by simply tuning the concentration of H2O2 to relatively high concentrations up to 8%. The morphological aspects are claimed by scanning electron microscopy proving that the kinetics of SiNWs formation display nonlinear relationships versus H2O2 concentration and etching time. A semi-qualitative electrochemical etching model based on local anodic, Ic, and cathodic, Ia, currents is proposed to explain the different morphological changes, and to unveil the formation pathways of both PS and SiNWs. More importantly, an efficient antireflective character for silicon solar cell (reflectance close to 2%) is realized at 8% H2O2. In addition, the luminescence of the prepared Si-nanostructures is claimed by photoluminescence which exhibit a large enhancement of the intensity and a blue shift for narrow and deep SiNWs.
NASA Astrophysics Data System (ADS)
Su, Junming; Zhang, Congcong; Chen, Xiang; Liu, Siyang; Huang, Tao; Yu, Aishui
2018-03-01
Although silicon is the most promising anode material for Li-ion batteries, large volume expansion during lithiation and delithiation is the main obstacle limiting the commercial application of silicon anodes. There are two ways to alleviate volume expansion and prevent further pulverization of a Si anode: fabrication of a rational nanostructure possessing void spaces and uniform distribution of the conducting sites, without a good balance effect in mitigating the limiting factors and enhancing battery performance. In this paper, we propose a novel nanostructure - a carbon-shell-constrained Si cluster (Si/C shell) with both adequate void space and good distribution of electrical contact sites to guarantee homogeneous lithiation in the initial cycle. Benefiting from the ability to maintain electrical conductivity of the outer carbon shell, even after cluster fragmentation, the Si/C shell synthesized from low-cost commercial Al-Si alloy spheres can deliver 0.03% capacity loss from 100th to 1000th cycles at a current density of 1 A g-1. The Si/C shell sample with the dual functional structure mentioned above can also maintain its own nanostructure during cycling and deliver excellent rate performance. It is a concise and scalable strategy which can simplify the preparation of other alloy anode materials for Li-ion batteries.
NASA Astrophysics Data System (ADS)
Huynh, T. T. D.; Semmar, N.
2017-09-01
The melting process and nanostructure formation induced by nanosecond and picosecond laser pulses on bulk silicon and copper thin film were studied by ex situ analysis and in situ real time reflectivity. Three different probing wavelengths (633, 473 and 326 nm) were used during the pump laser processing and were correlated to the beam parameters (pulse duration, laser fluence and number of laser shots) and copper thin film thickness. On a silicon surface using a KrF laser beam (27 ns, 1 Hz, 248 nm), the melting threshold was determined close to 700 mJ cm-2 and the melting duration increased from 10 to 130 ns as the fluence increased from 700 to 1750 mJ cm-2. Nanostructures with a spatial period close to the laser wavelength were formed on both copper thin film and silicon substrate after nanosecond Nd:YAG laser (10 ns, 266 nm, 1 Hz) irradiation. In the picosecond regime, using an Nd:YAG laser (40 ps, 266 nm, 1 Hz), different nanostructures, from spikes to laser-induced periodic surface structures, were formed on 500 nm copper thin film and were analyzed with respect to the drop in dynamic reflectivity changes versus the number of laser shots.
Demonstration of near infrared gas sensing using gold nanodisks on functionalized silicon.
Rodríguez-Cantó, P J; Martínez-Marco, M; Rodríguez-Fortuño, F J; Tomás-Navarro, B; Ortuño, R; Peransí-Llopis, S; Martínez, A
2011-04-11
In this work, we demonstrate experimentally the use of an array of gold nanodisks on functionalized silicon for chemosensing purposes. The metallic nanostructures are designed to display a very strong plasmonic resonance in the infrared regime, which results in highly sensitive sensing. Unlike usual experiments which are based on the functionalization of the metal surface, we functionalized here the silicon substrate. This silicon surface was modified chemically by buildup of an organosilane self-assembled monolayer (SAM) containing isocyanate as functional group. These groups allow for an easy surface regeneration by simple heating, thanks to the thermally reversible interaction isocyanate-analyte, which allows the cyclic use of the sensor. The technique showed a high sensitivity to surface binding events in gas and allowed the surface regeneration by heating of the sensor at 150 °C. A relative wavelength shift ∆λ(max)λ(0)=0.027 was obtained when the saturation level was reached. © 2011 Optical Society of America
Observation of soliton compression in silicon photonic crystals
Blanco-Redondo, A.; Husko, C.; Eades, D.; Zhang, Y.; Li, J.; Krauss, T.F.; Eggleton, B.J.
2014-01-01
Solitons are nonlinear waves present in diverse physical systems including plasmas, water surfaces and optics. In silicon, the presence of two photon absorption and accompanying free carriers strongly perturb the canonical dynamics of optical solitons. Here we report the first experimental demonstration of soliton-effect pulse compression of picosecond pulses in silicon, despite two photon absorption and free carriers. Here we achieve compression of 3.7 ps pulses to 1.6 ps with <10 pJ energy. We demonstrate a ~1-ps free-carrier-induced pulse acceleration and show that picosecond input pulses are critical to these observations. These experiments are enabled by a dispersion-engineered slow-light photonic crystal waveguide and an ultra-sensitive frequency-resolved electrical gating technique to detect the ultralow energies in the nanostructured device. Strong agreement with a nonlinear Schrödinger model confirms the measurements. These results further our understanding of nonlinear waves in silicon and open the way to soliton-based functionalities in complementary metal-oxide-semiconductor-compatible platforms. PMID:24423977
NASA Astrophysics Data System (ADS)
Joo, Beom Soo; Kim, Hyunseung; Jang, Seunghun; Han, Dongwoo; Han, Moonsup
2018-08-01
We investigated nano-floating gate memory having a charge trap layer (CTL) composed of cobalt germanide nanostructure (ns-CoGe). A tunneling oxide layer; a CTL containing Co, Ge, and Si; and a blocking oxide layer were sequentially deposited on a p-type silicon substrate by RF magnetron sputtering and low-pressure chemical vapor deposition. We optimized the CTL formation conditions by rapid thermal annealing at a somewhat low temperature (about 830 °C) by considering the differences in Gibbs free energy and chemical enthalpy among the components. To characterize the charge storage properties, capacitance-voltage (C-V) measurements were performed. Further, we used X-ray photoelectron spectroscopy for chemical analysis of the CTL. In this work, we not only report that the C-V measurement shows a remarkable opening of the memory window for the ns-CoGe compared with those of nanostructures composed of Co or Ge alone, but also clarify that the improvement in the memory characteristics originates in the nanostructure formation, which consists mainly of Co-Ge bonds. We expect ns-CoGe to be a strong candidate for fabrication of next-generation memory devices.
NASA Astrophysics Data System (ADS)
Ozhikandathil, Jayan; Badilescu, Simona; Packirisamy, Muthukumaran
2012-10-01
Antibiotics are extensively used in veterinary medicine for the treatment of infectious diseases. The use of antibiotics for the treatment of animals used for food production raised the concern of the public and a rapid screening method became necessary. A novel approach of detection of antibiotics in milk is reported in this work by using an immunoassay format and the Localized Surface Plasmon Resonance property of gold. An antibiotic from the penicillin family that is, ampicillin is used for testing. Gold nanostructures deposited on a glass substrate by a novel convective assembly method were heat-treated to form a nanoisland morphology. The Au nanostructures were functionalized and the corresponding antibody was absorbed from a solution. Solutions with known concentrations of antigen (antibiotics) were subsequently added and the spectral changes were monitored step by step. The Au LSPR band corresponding to the nano-island structure was found to be suitable for the detection of the antibody antigen interaction. The detection of the ampicillin was successfully demonstrated with the gold nano-islands deposited on glass substrate. This process was subsequently adapted for the integration of gold nanostructures on the silica-on-silicon waveguide for the purpose of detecting antibiotics.
DOE Office of Scientific and Technical Information (OSTI.GOV)
Kuang, Ping; Lin, Shawn-Yu, E-mail: sylin@rpi.edu; Hsieh, Mei-Li
2015-06-07
In this paper, we proposed and realized 3D photonic nanostructures consisting of ultra-thin graded index antireflective coatings (ARCs) and woodpile photonic crystals. The use of the integrated ARC and photonic crystal structure can achieve broadband, broad-angle near unity solar absorption. The amorphous silicon based photonic nanostructure experimentally shows an average absorption of ∼95% for λ = 400–620 nm over a wide angular acceptance of θ = 0°–60°. Theoretical studies show that a Gallium Arsenide (GaAs) based structure can achieve an average absorption of >95% for λ = 400–870 nm. Furthermore, the use of the slanted SiO{sub 2} nanorod ARC surface layer by glancing angle deposition exhibits Cassie-Baxter statemore » wetting, and superhydrophobic surface is obtained with highest water contact angle θ{sub CB} ∼ 153°. These properties are fundamentally important for achieving maximum solar absorption and surface self-cleaning in thin film solar cell applications.« less
The dual role of silver during silicon etching in HF solution
2012-01-01
It was reported that during silicon etching, silver was subjected to have a controversial role. Some researchers debate that silver protects silicon, and, at the same time, other ones confirm that silver catalyzes silicon underneath. In this paper, we give experimental results arguing the dual role that silver has during the formation of silicon nanostructures. We give a proof that the role of silver depends on the experimental details and the intrinsic properties of silver during its deposition on the silicon wafer. Through our investigations, we tracked the silver particles that indicated which mechanism is involved. Characterizations of the prepared samples were made using a scanning electron microscope. PMID:22888998
DOE Office of Scientific and Technical Information (OSTI.GOV)
Chubenko, E. B., E-mail: eugene.chubenko@gmail.com; Redko, S. V.; Sherstnyov, A. I.
2016-03-15
The influence of the surface layer on the process of the electrochemical deposition of metals and semiconductors into porous silicon is studied. It is shown that the surface layer differs in structure and electrical characteristics from the host porous silicon bulk. It is established that a decrease in the conductivity of silicon crystallites that form the surface layer of porous silicon has a positive effect on the process of the filling of porous silicon with metals and semiconductors. This is demonstrated by the example of nickel and zinc oxide. The effect can be used for the formation of nanocomposite materialsmore » on the basis of porous silicon and nanostructures with a high aspect ratio.« less
Carbon Nanotube Based Chemical Sensors for Space and Terrestrial Applications
NASA Technical Reports Server (NTRS)
Li, Jing; Lu, Yijiang
2009-01-01
A nanosensor technology has been developed using nanostructures, such as single walled carbon nanotubes (SWNTs), on a pair of interdigitated electrodes (IDE) processed with a silicon-based microfabrication and micromachining technique. The IDE fingers were fabricated using photolithography and thin film metallization techniques. Both in-situ growth of nanostructure materials and casting of the nanostructure dispersions were used to make chemical sensing devices. These sensors have been exposed to nitrogen dioxide, acetone, benzene, nitrotoluene, chlorine, and ammonia in the concentration range of ppm to ppb at room temperature. The electronic molecular sensing of carbon nanotubes in our sensor platform can be understood by intra- and inter-tube electron modulation in terms of charge transfer mechanisms. As a result of the charge transfer, the conductance of p-type or hole-richer SWNTs in air will change. Due to the large surface area, low surface energy barrier and high thermal and mechanical stability, nanostructured chemical sensors potentially can offer higher sensitivity, lower power consumption and better robustness than the state-of-the-art systems, which make them more attractive for defense and space applications. Combined with MEMS technology, light weight and compact size sensors can be made in wafer scale with low cost. Additionally, a wireless capability of such a sensor chip can be used for networked mobile and fixed-site detection and warning systems for military bases, facilities and battlefield areas.
Semiconductor nanostructures for plasma energetic systems
NASA Astrophysics Data System (ADS)
Mustafaev, Alexander; Smerdov, Rostislav; Klimenkov, Boris
2017-10-01
In this talk we discuss the research results of the three types of ultrasmall electrodes namely the nanoelectrode arrays based on composite nanostructured porous silicon (PS) layers, porous GaP and nanocrystals of ZnO. These semiconductor materials are of great interest to nano- and optoelectronic applications by virtue of their high specific surface area and extensive capability for surface functionalization. The use of semiconductor (GaN) cathodes in photon-enhanced thermionic emission systems has also proved to be effective although only a few (less than 1%) of the incident photons exceed the 3.3 eV GaN band gap. This significant drawback provided us with a solid foundation for our research in the field of nanostructured PS, and composite materials based on it exhibiting nearly optimal parameters in terms of the band gap (1.1 eV). The band gap modification for PS nanostructured layers is possible in the range of less than 1 eV and 3 eV due to the existence of quantum confinement effect and the remarkable possibilities of PS surface alteration thus providing us with a suitable material for both cathode and anode fabrication. The obtained results are applicable for solar concentration and thermionic energy conversion systems. Dr. Sci., Ph.D, Principal Scientist, Professor.
NASA Astrophysics Data System (ADS)
Koryazhkina, M. N.; Tikhov, S. V.; Mikhaylov, A. N.; Belov, A. I.; Korolev, D. S.; Antonov, I. N.; Karzanov, V. V.; Gorshkov, O. N.; Tetelbaum, D. I.; Karakolis, P.; Dimitrakis, P.
2018-03-01
Bipolar resistive switching in metal-insulator-semiconductor (MIS) capacitor-like structures with an inert Au top electrode and a Si3N4 insulator nanolayer (6 nm thick) has been observed. The effect of a highly doped n +-Si substrate and a SiO2 interlayer (2 nm) is revealed in the changes in the semiconductor space charge region and small-signal parameters of parallel and serial equivalent circuit models measured in the high- and low-resistive capacitor states, as well as under laser illumination. The increase in conductivity of the semiconductor capacitor plate significantly reduces the charging and discharging times of capacitor-like structures.
Nano-cone resistive memory for ultralow power operation.
Kim, Sungjun; Jung, Sunghun; Kim, Min-Hwi; Kim, Tae-Hyeon; Bang, Suhyun; Cho, Seongjae; Park, Byung-Gook
2017-03-24
SiN x -based nano-structure resistive memory is fabricated by fully silicon CMOS compatible process integration including particularly designed anisotropic etching for the construction of a nano-cone silicon bottom electrode (BE). Bipolar resistive switching characteristics have significantly reduced switching current and voltage and are demonstrated in a nano-cone BE structure, as compared with those in a flat BE one. We have verified by systematic device simulations that the main cause of reduction in the performance parameters is the high electric field being more effectively concentrated at the tip of the cone-shaped BE. The greatly improved nonlinearity of the nano-cone resistive memory cell will be beneficial in the ultra-high-density crossbar array.
Chang, Chia-Ching; Sun, Kien Wen; Lee, Shang-Fan; Kan, Lou-Sing
2007-04-01
The paper reports the methods of preparing molecular magnets and patterning of the molecules on a semiconductor surface. A highly magnetically aligned metallothionein containing Mn and Cd (Mn,Cd-MT-2) is first synthesized, and the molecules are then placed into nanopores prepared on silicon (001) surfaces using electron beam lithography and reactive ion-etching techniques. We have observed the self-assemble growth of the MT molecules on the patterned Si surface such that the MT molecules have grown into rod or ring type three-dimensional nanostructures, depending on the patterned nanostructures on the surface. We also provide scanning electron microscopy, atomic force microscopy, and magnetic force microscope studies of the molecular nanostructures. This engineered molecule shows molecular magnetization and is biocompatible with conventional semiconductors. These features make Mn,Cd-MT-2 a good candidate for biological applications and sensing sources of new nanodevices. Using molecular self-assembly and topographical patterning of the semiconductor substrate, we can close the gap between bio-molecules and nanoelectronics built into the semiconductor chip.
NASA Astrophysics Data System (ADS)
Unal, Bayram
2011-10-01
In this work, the degradation of visible photoluminescence of porous silicon (PSi) under the influential actions of cell culture medium has been mainly studied in order to comprehend the quenching mechanisms necessitating the cell growth on spongy-like-silicon structures, which could form either micro- and/or nano-dimensional morphologies after stain-etching of the poly- or single-crystalline Si surfaces. Quenching effect of the neuron culture medium on visibly luminescent and non-luminescent porous silicon is found to be quite obvious so that this step of the culture process, especially, over nanostructured silicon is extremely essential for a variety of bionanotechnological applications.
Chen, Guanying; Ning, Zhijun; Ågren, Hans
2016-08-09
We are glad to announce the Special Issue "Nanostructured Solar Cells", published in Nanomaterials. This issue consists of eight articles, two communications, and one review paper, covering major important aspects of nanostructured solar cells of varying types. From fundamental physicochemical investigations to technological advances, and from single junction solar cells (silicon solar cell, dye sensitized solar cell, quantum dots sensitized solar cell, and small molecule organic solar cell) to tandem multi-junction solar cells, all aspects are included and discussed in this issue to advance the use of nanotechnology to improve the performance of solar cells with reduced fabrication costs.
Liang, Jianwen; Wei, Denghu; Lin, Ning; Zhu, Youngchun; Li, Xiaona; Zhang, Jingjing; Fan, Long; Qian, Yitai
2014-07-04
Honeycomb porous silicon (hp-Si) has been synthesized by a low temperature (200 °C) magnesiothermic reduction of Na2SiO3·9H2O. This process can be regarded as a general synthesis method for other silicide materials. Significantly, hp-Si features excellent electrochemical properties after graphene coating.
Ouyang, Qingling; Zeng, Shuwen; Jiang, Li; Hong, Liying; Xu, Gaixia; Dinh, Xuan-Quyen; Qian, Jun; He, Sailing; Qu, Junle; Coquet, Philippe; Yong, Ken-Tye
2016-01-01
In this work, we designed a sensitivity-enhanced surface plasmon resonance biosensor structure based on silicon nanosheet and two-dimensional transition metal dichalcogenides. This configuration contains six components: SF10 triangular prism, gold thin film, silicon nanosheet, two-dimensional MoS2/MoSe2/WS2/WSe2 (defined as MX2) layers, biomolecular analyte layer and sensing medium. The minimum reflectivity, sensitivity as well as the Full Width at Half Maximum of SPR curve are systematically examined by using Fresnel equations and the transfer matrix method in the visible and near infrared wavelength range (600 nm to 1024 nm). The variation of the minimum reflectivity and the change in resonance angle as the function of the number of MX2 layers are presented respectively. The results show that silicon nanosheet and MX2 layers can be served as effective light absorption medium. Under resonance conditions, the electrons in these additional dielectric layers can be transferred to the surface of gold thin film. All silicon-MX2 enhanced sensing models show much better performance than that of the conventional sensing scheme where pure Au thin film is used, the highest sensitivity can be achieved by employing 600 nm excitation light wavelength with 35 nm gold thin film and 7 nm thickness silicon nanosheet coated with monolayer WS2. PMID:27305974
Analysis of water microdroplet condensation on silicon surfaces
NASA Astrophysics Data System (ADS)
Honda, Takuya; Fujimoto, Kenya; Yoshimoto, Yuta; Mogi, Katsuo; Kinefuchi, Ikuya; Sugii, Yasuhiko; Takagi, Shu; Univ. of Tokyo Team; Tokyo Inst. of Tech. Team
2016-11-01
We observed the condensation process of water microdroplets on flat silicon (100) surfaces by means of the sequential visualization of the droplets using an environmental scanning electron microscope. As previously reported for nanostructured surfaces, the condensation process of water microdroplets on the flat silicon surfaces also exhibits two modes: the constant base (CB) area mode and the constant contact angle (CCA) mode. In the CB mode, the contact angle increases with time while the base diameter is constant. Subsequently, in the CCA mode, the base diameter increases with time while the contact angle remains constant. The dropwise condensation model regulated by subcooling temperature does not reproduce the experimental results. Because the subcooling temperature is not constant in the case of a slow condensation rate, this model is not applicable to the condensation of the long time scale ( several tens of minutes). The contact angle of water microdroplets ( several μm) tended to be smaller than the macro contact angle. Two hypotheses are proposed as the cause of small contact angles: electrowetting and the coalescence of sub- μm water droplets.
Variable temperature performance of a fully screen printed transistor switch
NASA Astrophysics Data System (ADS)
Zambou, Serges; Magunje, Batsirai; Rhyme, Setshedi; Walton, Stanley D.; Idowu, M. Florence; Unuigbe, David; Britton, David T.; Härting, Margit
2016-12-01
This article reports on the variable temperature performance of a flexible printed transistor which works as a current driven switch. In this work, electronic ink is formulated from nanostructured silicon produced by milling polycrystalline silicon. The study of the silicon active layer shows that its conductivity is based on thermal activation of carriers, and could be used as active layers in active devices. We further report on the transistors switching operation and their electrical performance under variable temperature. The reliability of the transistors at constant current bias was also investigated. Analysis of the electrical transfer characteristics from 340 to 10 K showed that the printed devices' current ON/OFF ratio increases as temperature decreases making it a better switch at lower temperatures. A constant current bias on a terminal for up to six hours shows extraordinary stability in electrical performance of the device.
DOE Office of Scientific and Technical Information (OSTI.GOV)
Harvey-Collard, Patrick
2015-10-27
From January 2015 to July 2015, I was doing research at Sandia National Laboratories in Albuquerque, United States. My work there consisted of performing experimental measurements using Sandia’s unique silicon quantum computing platform. The project is about coupling donor spin quantum bits, or qubits, to quantum dots in a silicon nanostructure based on conventional microchip technology. During the project, I devised a new quantum state readout mechanism that allow better, longer lived measurement signals. The measurement (or readout) mechanism is key to any qubit architecture. Next, I was able to demonstrate a quantum manipulation of the two-electron spin states ofmore » the coupled donor and quantum dot system. This constitutes a breakthrough for donor spin qubits in silicon because it could enable larger systems consisting of many qubits. This project will lead to publications in scientific journals, presentations in international conferences, and generates exciting new opportunities for manipulating nature at the nanoscale.« less
Synthesis of Novel Double-Layer Nanostructures of SiC–WOxby a Two Step Thermal Evaporation Process
2009-01-01
A novel double-layer nanostructure of silicon carbide and tungsten oxide is synthesized by a two-step thermal evaporation process using NiO as the catalyst. First, SiC nanowires are grown on Si substrate and then high density W18O49nanorods are grown on these SiC nanowires to form a double-layer nanostructure. XRD and TEM analysis revealed that the synthesized nanostructures are well crystalline. The growth of W18O49nanorods on SiC nanowires is explained on the basis of vapor–solid (VS) mechanism. The reasonably better turn-on field (5.4 V/μm) measured from the field emission measurements suggest that the synthesized nanostructures could be used as potential field emitters. PMID:20596292
NASA Astrophysics Data System (ADS)
Si, Wenping; Sun, Xiaolei; Liu, Xianghong; Xi, Lixia; Jia, Yandong; Yan, Chenglin; Schmidt, Oliver G.
2014-12-01
We report a feasible design to fabricate micrometer-scale Si films deposited on nanostructured Cu foil as high areal capacity anodes for Li-ion batteries with excellent cycling performance. Nanostructured copper oxides are prepared by anodic oxidation of Cu foil in alkaline solution. The resultant copper oxide nanofibers function as matrix for thick Si films (1-2 μm) loading. Metallic Cu nanofibers are obtained by in-situ electrochemical reduction at low potentials, which work as electrical highways for fast electron transport and a reliable mechanical matrix to accommodate volume changes during lithium-silicon alloy/dealloy processes. The engineered thick Si film anode exhibit both high areal capacity (0.48 mAh cm-2 for 1 μm Si film and 0.6 mAh cm-2 for 2 μm Si film after 200 cycles at 0.225 mA cm-2) and excellent rate capability (0.52 mAh cm-2 at 1.05 mA cm-2 for 2 μm Si film). The 2 μm silicon film electrode is able to recover to the initial value of 1 mAh cm-2 when the current rate is set back to 0.15 mA cm-2 even after cycling at high current rates. The reported concept can be a general method for high-loading-film electrodes, which is industrial scalable and compatible with current battery manufacturing processes.
Chen, Hong-Yan; Lu, Hong-Liang; Sun, Long; Ren, Qing-Hua; Zhang, Hao; Ji, Xin-Ming; Liu, Wen-Jun; Ding, Shi-Jin; Yang, Xiao-Feng; Zhang, David Wei
2016-01-01
Nowadays, the multi-crystalline silicon (mc-Si) solar cells dominate the photovoltaic industry. However, the current acid etching method on mc-Si surface used by firms can hardly suppress the average reflectance value below 25% in the visible light spectrum. Meanwhile, the nitric acid and the hydrofluoric contained in the etching solution is both environmental unfriendly and highly toxic to human. Here, a mc-Si solar cell based on ZnO nanostructures and an Al2O3 spacer layer is demonstrated. The eco-friendly fabrication is realized by low temperature atomic layer deposition of Al2O3 layer as well as ZnO seed layer. Moreover, the ZnO nanostructures are prepared by nontoxic and low cost hydro-thermal growth process. Results show that the best passivation quality of the n+ -type mc-Si surface can be achieved by balancing the Si dangling bond saturation level and the negative charge concentration in the Al2O3 film. Moreover, the average reflectance on cell surface can be suppressed to 8.2% in 400–900 nm range by controlling the thickness of ZnO seed layer. With these two combined refinements, a maximum solar cell efficiency of 15.8% is obtained eventually. This work offer a facile way to realize the environmental friendly fabrication of high performance mc-Si solar cells. PMID:27924911
NASA Astrophysics Data System (ADS)
Chen, Hong-Yan; Lu, Hong-Liang; Sun, Long; Ren, Qing-Hua; Zhang, Hao; Ji, Xin-Ming; Liu, Wen-Jun; Ding, Shi-Jin; Yang, Xiao-Feng; Zhang, David Wei
2016-12-01
Nowadays, the multi-crystalline silicon (mc-Si) solar cells dominate the photovoltaic industry. However, the current acid etching method on mc-Si surface used by firms can hardly suppress the average reflectance value below 25% in the visible light spectrum. Meanwhile, the nitric acid and the hydrofluoric contained in the etching solution is both environmental unfriendly and highly toxic to human. Here, a mc-Si solar cell based on ZnO nanostructures and an Al2O3 spacer layer is demonstrated. The eco-friendly fabrication is realized by low temperature atomic layer deposition of Al2O3 layer as well as ZnO seed layer. Moreover, the ZnO nanostructures are prepared by nontoxic and low cost hydro-thermal growth process. Results show that the best passivation quality of the n+ -type mc-Si surface can be achieved by balancing the Si dangling bond saturation level and the negative charge concentration in the Al2O3 film. Moreover, the average reflectance on cell surface can be suppressed to 8.2% in 400-900 nm range by controlling the thickness of ZnO seed layer. With these two combined refinements, a maximum solar cell efficiency of 15.8% is obtained eventually. This work offer a facile way to realize the environmental friendly fabrication of high performance mc-Si solar cells.
Nakamura, Yoshiaki
2018-01-01
Abstract The design and fabrication of nanostructured materials to control both thermal and electrical properties are demonstrated for high-performance thermoelectric conversion. We have focused on silicon (Si) because it is an environmentally friendly and ubiquitous element. High bulk thermal conductivity of Si limits its potential as a thermoelectric material. The thermal conductivity of Si has been reduced by introducing grains, or wires, yet a further reduction is required while retaining a high electrical conductivity. We have designed two different nanostructures for this purpose. One structure is connected Si nanodots (NDs) with the same crystal orientation. The phonons scattering at the interfaces of these NDs occurred and it depended on the ND size. As a result of phonon scattering, the thermal conductivity of this nanostructured material was below/close to the amorphous limit. The other structure is Si films containing epitaxially grown Ge NDs. The Si layer imparted high electrical conductivity, while the Ge NDs served as phonon scattering bodies reducing thermal conductivity drastically. This work gives a methodology for the independent control of electron and phonon transport using nanostructured materials. This can bring the realization of thermoelectric Si-based materials that are compatible with large scale integrated circuit processing technologies. PMID:29371907
One-step large-scale deposition of salt-free DNA origami nanostructures
Linko, Veikko; Shen, Boxuan; Tapio, Kosti; Toppari, J. Jussi; Kostiainen, Mauri A.; Tuukkanen, Sampo
2015-01-01
DNA origami nanostructures have tremendous potential to serve as versatile platforms in self-assembly -based nanofabrication and in highly parallel nanoscale patterning. However, uniform deposition and reliable anchoring of DNA nanostructures often requires specific conditions, such as pre-treatment of the chosen substrate or a fine-tuned salt concentration for the deposition buffer. In addition, currently available deposition techniques are suitable merely for small scales. In this article, we exploit a spray-coating technique in order to resolve the aforementioned issues in the deposition of different 2D and 3D DNA origami nanostructures. We show that purified DNA origamis can be controllably deposited on silicon and glass substrates by the proposed method. The results are verified using either atomic force microscopy or fluorescence microscopy depending on the shape of the DNA origami. DNA origamis are successfully deposited onto untreated substrates with surface coverage of about 4 objects/mm2. Further, the DNA nanostructures maintain their shape even if the salt residues are removed from the DNA origami fabrication buffer after the folding procedure. We believe that the presented one-step spray-coating method will find use in various fields of material sciences, especially in the development of DNA biochips and in the fabrication of metamaterials and plasmonic devices through DNA metallisation. PMID:26492833
NASA Astrophysics Data System (ADS)
Hasan, Jafar; Jain, Shubham; Chatterjee, Kaushik
2017-01-01
We have developed a chlorine based reactive ion etching process to yield randomly oriented anisotropic nanostructures that render the titanium metal surface ‘black’ similar to that of black silicon. The surface appears black due to the nanostructures in contrast to the conventional shiny surface of titanium. The nanostructures were found to kill bacteria on contact by mechanically rupturing the cells as has been observed previously on wings of certain insects. The etching was optimized to yield nanostructures of ≈1 μm height for maximal bactericidal efficiency without compromising cytocompatibility. Within 4 hours of contact with the black titanium surface, 95% ± 5% of E. coli, 98% ± 2% of P. aeruginosa, 92% ± 5% of M. smegmatis and 22% ± 8% of S. aureus cells that had attached were killed. The killing efficiency for the S. aureus increased to 76% ± 4% when the cells were allowed to adhere up to 24 hours. The black titanium supported the attachment and proliferation of human mesenchymal stem cells and augmented osteogenic lineage commitment in vitro. Thus, the bioinspired nanostructures on black titanium impart multi-biofunctional properties toward engineering the next-generation biomaterials for orthopedic implants.
Hasan, Jafar; Jain, Shubham; Chatterjee, Kaushik
2017-01-01
We have developed a chlorine based reactive ion etching process to yield randomly oriented anisotropic nanostructures that render the titanium metal surface ‘black’ similar to that of black silicon. The surface appears black due to the nanostructures in contrast to the conventional shiny surface of titanium. The nanostructures were found to kill bacteria on contact by mechanically rupturing the cells as has been observed previously on wings of certain insects. The etching was optimized to yield nanostructures of ≈1 μm height for maximal bactericidal efficiency without compromising cytocompatibility. Within 4 hours of contact with the black titanium surface, 95% ± 5% of E. coli, 98% ± 2% of P. aeruginosa, 92% ± 5% of M. smegmatis and 22% ± 8% of S. aureus cells that had attached were killed. The killing efficiency for the S. aureus increased to 76% ± 4% when the cells were allowed to adhere up to 24 hours. The black titanium supported the attachment and proliferation of human mesenchymal stem cells and augmented osteogenic lineage commitment in vitro. Thus, the bioinspired nanostructures on black titanium impart multi-biofunctional properties toward engineering the next-generation biomaterials for orthopedic implants. PMID:28112235
Mechanism of erosion of nanostructured porous silicon drug carriers in neoplastic tissues
Tzur-Balter, Adi; Shatsberg, Zohar; Beckerman, Margarita; Segal, Ester; Artzi, Natalie
2015-01-01
Nanostructured porous silicon (PSi) is emerging as a promising platform for drug delivery owing to its biocompatibility, degradability and high surface area available for drug loading. The ability to control PSi structure, size and porosity enables programming its in vivo retention, providing tight control over embedded drug release kinetics. In this work, the relationship between the in vitro and in vivo degradation of PSi under (pre)clinically relevant conditions, using breast cancer mouse model, is defined. We show that PSi undergoes enhanced degradation in diseased environment compared with healthy state, owing to the upregulation of reactive oxygen species (ROS) in the tumour vicinity that oxidize the silicon scaffold and catalyse its degradation. We further show that PSi degradation in vitro and in vivo correlates in healthy and diseased states when ROS-free or ROS-containing media are used, respectively. Our work demonstrates that understanding the governing mechanisms associated with specific tissue microenvironment permits predictive material performance. PMID:25670235
Rapid Growth of Nanostructured Diamond Film on Silicon and Ti-6Al-4V Alloy Substrates.
Samudrala, Gopi K; Vohra, Yogesh K; Walock, Michael J; Miles, Robin
2014-01-13
Nanostructured diamond (NSD) films were grown on silicon and Ti-6Al-4V alloy substrates by microwave plasma chemical vapor deposition (MPCVD). NSD Growth rates of 5 µm/h on silicon, and 4 µm/h on Ti-6Al-4V were achieved. In a chemistry of H₂/CH₄/N₂, varying ratios of CH₄/H₂ and N₂/CH₄ were employed in this research and their effect on the resulting diamond films were studied by X-ray photoelectron spectroscopy, Raman spectroscopy, scanning electron microscopy, and atomic force microscopy. As a result of modifying the stock cooling stage of CVD system, we were able to utilize plasma with high power densities in our NSD growth experiments, enabling us to achieve high growth rates. Substrate temperature and N₂/CH₄ ratio have been found to be key factors in determining the diamond film quality. NSD films grown as part of this study were shown to contain 85% to 90% sp³ bonded carbon.
The development of 8 inch roll-to-plate nanoimprint lithography (8-R2P-NIL) system
NASA Astrophysics Data System (ADS)
Lee, Lai Seng; Mohamed, Khairudin; Ooi, Su Guan
2017-07-01
Growth in semiconductor and integrated circuit industry was observed in the past decennium of years for industrial technology which followed Moore's law. The line width of nanostructure to be exposed was influenced by the essential technology of photolithography. Thus, it is crucial to have a low cost and high throughput manufacturing process for nanostructures. Nanoimprint Lithography technique invented by Stephen Y. Chou was considered as major nanolithography process to be used in future integrated circuit and integrated optics. The drawbacks of high imprint pressure, high imprint temperature, air bubbles formation, resist sticking to mold and low throughput of thermal nanoimprint lithography on silicon wafer have yet to be solved. Thus, the objectives of this work is to develop a high throughput, low imprint force, room temperature UV assisted 8 inch roll to plate nanoimprint lithography system capable of imprinting nanostructures on 200 mm silicon wafer using roller imprint with flexible mold. A piece of resist spin coated silicon wafer was placed onto vacuum chuck drives forward by a stepper motor. A quartz roller wrapped with a piece of transparent flexible mold was used as imprint roller. The imprinted nanostructures were cured by 10 W, 365 nm UV LED which situated inside the quartz roller. Heat generated by UV LED was dissipated by micro heat pipe. The flexible mold detaches from imprinted nanostructures in a 'line peeling' pattern and imprint pressure was measured by ultra-thin force sensors. This system has imprinting speed capability ranging from 0.19 mm/s to 5.65 mm/s, equivalent to imprinting capability of 3 to 20 pieces of 8 inch wafers per hour. Speed synchronization between imprint roller and vacuum chuck was achieved by controlling pulse rate supplied to stepper motor which drive the vacuum chuck. The speed different ranging from 2 nm/s to 98 nm/s is achievable. Vacuum chuck height was controlled by stepper motor with displacement of 5 nm/step.
Probing the low thermal conductivity of single-crystalline porous Si nanowires
NASA Astrophysics Data System (ADS)
Zhao, Yunshan; Lina Yang Collaboration; Lingyu Kong Collaboration; Baowen Li Collaboration; John T L Thong Collaboration; Kedar Hippalgaonkar Collaboration
Pore-like structures provide a novel way to reduce the thermal conductivity of silicon nanowires, compared to both smooth-surface VLS nanowires and rough EE nanowires. Because of enhanced phonon scattering with interface and decrease in phonon transport path, the porous nanostructures show reduction in thermal conductance by few orders of magnitude. It proves to be extremely challenging to evaluate porosity accurately in an experimental manner and further understand its effect on thermal transport. In this study, we use the newly developed electron-beam based micro-electrothermal device technique to study the porosity dependent thermal conductivity of mesoporous silicon nanowires that have single-crystalline scaffolding. Based on the Casino simulation, the power absorbed by the nanowire, coming from the loss of travelling electron energy, has a linear relationship with it cross section. The relationship has been verified experimentally as well. Monte Carlo simulation is carried out to theoretically predict the thermal conductivity of silicon nanowires with a specific value of porosity. These single-crystalline porous silicon nanowires show extremely low thermal conductivity, even below the amorphous limit. These structures together with our experimental techniques provide a particularly intriguing platform to understand the phonon transport in nanoscale and aid the performance improvement in future nanowires-based devices.
Mg-catalyzed autoclave synthesis of aligned silicon carbide nanostructures.
Xi, Guangcheng; Liu, Yankuan; Liu, Xiaoyan; Wang, Xiaoqing; Qian, Yitai
2006-07-27
In this article, a novel magnesium-catalyzed co-reduction route was developed for the large-scale synthesis of aligned beta-SiC one-dimensional (1D) nanostructures at relative lower temperature (600 degrees C). By carefully controlling the reagent concentrations, we could synthesize beta-SiC rodlike and needlelike nanostructures. The possible growth mechanism of the as-synthesized beta-SiC 1D nanostructures has been investigated. The structure and morphology of the as-synthesized beta-SiC nanostructures are characterized using X-ray diffraction, Fourier transform infrared absorption, and scanning and transmission electron microscopes. Raman and photoluminescence properties are also investigated at room temperature. The as-synthesized beta-SiC nanostructures exhibit strong shape-dependent field emission properties. Corresponding to their shapes, the as-synthesized nanorods and nanoneedles display the turn-on fields of 12, 8.4, and 1.8 V/microm, respectively.
Matrix-assisted energy conversion in nanostructured piezoelectric arrays
Sirbuly, Donald J.; Wang, Xianying; Wang, Yinmin
2013-01-01
A nanoconverter is capable of directly generating electricity through a nanostructure embedded in a polymer layer experiencing differential thermal expansion in a stress transfer zone. High surface-to-volume ratio semiconductor nanowires or nanotubes (such as ZnO, silicon, carbon, etc.) are grown either aligned or substantially vertically aligned on a substrate. The resulting nanoforest is then embedded with the polymer layer, which transfers stress to the nanostructures in the stress transfer zone, thereby creating a nanostructure voltage output due to the piezoelectric effect acting on the nanostructure. Electrodes attached at both ends of the nanostructures generate output power at densities of .about.20 nW/cm.sup.2 with heating temperatures of .about.65.degree. C. Nanoconverters arrayed in a series parallel arrangement may be constructed in planar, stacked, or rolled arrays to supply power to nano- and micro-devices without use of external batteries.
Rapid growth and photoluminescence properties of doped ZnS one-dimensional nanostructures
NASA Astrophysics Data System (ADS)
Zhuo, R. F.; Feng, H. T.; Yan, D.; Chen, J. T.; Feng, J. J.; Liu, J. Z.; Yan, P. X.
2008-06-01
In this paper we report the synthesis of doped ZnS one-dimensional (1D) nanostructures by well-established technique of chemical vapor deposition using Zn and S powder as precursors. The ZnS 1D nanostructures were grown on the surface of Au particle-filled anodic aluminum oxide templates, catalyst-free graphite sheets and silicon substrates. ZnS 1D nanostructures with Mn, Cu and Fe as dopants were prepared via a rapid process of 15-20 min. The morphologies of ZnS nanostructures synthesized on different substrates and at different growth temperatures have distinct dissimilarities. The size of ZnS nanowires originated from the Au catalysts could be varied by altering the size of membrane nanopores as well as the embedded Au particles. Room-temperature photoluminescence measurements reveal strong blue, green and yellow-orange light emissions from the doped ZnS 1D nanostructures.
Novel biomaterials: plasma-enabled nanostructures and functions
NASA Astrophysics Data System (ADS)
Levchenko, Igor; Keidar, Michael; Cvelbar, Uroš; Mariotti, Davide; Mai-Prochnow, Anne; Fang, Jinghua; (Ken Ostrikov, Kostya
2016-07-01
Material processing techniques utilizing low-temperature plasmas as the main process tool feature many unique capabilities for the fabrication of various nanostructured materials. As compared with the neutral-gas based techniques and methods, the plasma-based approaches offer higher levels of energy and flux controllability, often leading to higher quality of the fabricated nanomaterials and sometimes to the synthesis of the hierarchical materials with interesting properties. Among others, nanoscale biomaterials attract significant attention due to their special properties towards the biological materials (proteins, enzymes), living cells and tissues. This review briefly examines various approaches based on the use of low-temperature plasma environments to fabricate nanoscale biomaterials exhibiting high biological activity, biological inertness for drug delivery system, and other features of the biomaterials make them highly attractive. In particular, we briefly discuss the plasma-assisted fabrication of gold and silicon nanoparticles for bio-applications; carbon nanoparticles for bioimaging and cancer therapy; carbon nanotube-based platforms for enzyme production and bacteria growth control, and other applications of low-temperature plasmas in the production of biologically-active materials.
Li, Xiao; Tan, Jie; Yu, Jiekai; Feng, Jiandong; Pan, Aiwu; Zheng, Shu; Wu, Jianmin
2014-11-07
Small peptides in serum are potential biomarkers for the diagnosis of cancer and other diseases. The identification of peptide biomarkers in human plasma/serum has become an area of high interest in medical research. However, the direct analysis of peptides in serum samples using mass spectrometry is challenging due to the low concentration of peptides and the high abundance of high-molecular-weight proteins in serum, the latter of which causes severe signal suppression. Herein, we reported that porous semiconductor-noble metal hybrid nanostructures can both eliminate the interference from large proteins in serum samples and significantly enhance the matrix-assisted laser desorption/ionization time-of-flight mass spectrometry (MALDI-TOF-MS) yields of peptides captured on the nanostructure. Serum peptide fingerprints with high fidelity can be acquired rapidly, and successful discrimination of colorectal cancer patients based on peptide fingerprints is demonstrated. Copyright © 2014 Elsevier B.V. All rights reserved.
Catalyst for microelectromechanical systems microreactors
Morse, Jeffrey D [Martinez, CA; Sopchak, David A [Livermore, CA; Upadhye, Ravindra S [Pleasanton, CA; Reynolds, John G [San Ramon, CA; Satcher, Joseph H [Patterson, CA; Gash, Alex E [Brentwood, CA
2010-06-29
A microreactor comprising a silicon wafer, a multiplicity of microchannels in the silicon wafer, and a catalyst coating the microchannels. In one embodiment the catalyst coating the microchannels comprises a nanostructured material. In another embodiment the catalyst coating the microchannels comprises an aerogel. In another embodiment the catalyst coating the microchannels comprises a solgel. In another embodiment the catalyst coating the microchannels comprises carbon nanotubes.
Catalyst for microelectromechanical systems microreactors
Morse, Jeffrey D [Martinez, CA; Sopchak, David A [Livermore, CA; Upadhye, Ravindra S [Pleasanton, CA; Reynolds, John G [San Ramon, CA; Satcher, Joseph H [Patterson, CA; Gash, Alex E [Brentwood, CA
2011-11-15
A microreactor comprising a silicon wafer, a multiplicity of microchannels in the silicon wafer, and a catalyst coating the microchannels. In one embodiment the catalyst coating the microchannels comprises a nanostructured material. In another embodiment the catalyst coating the microchannels comprises an aerogel. In another embodiment the catalyst coating the microchannels comprises a solgel. In another embodiment the catalyst coating the microchannels comprises carbon nanotubes.
Silicon diatom frustules as nanostructured photoelectrodes.
Chandrasekaran, Soundarrajan; Sweetman, Martin J; Kant, Krishna; Skinner, William; Losic, Dusan; Nann, Thomas; Voelcker, Nicolas H
2014-09-18
In the quest for solutions to meeting future energy demands, solar fuels play an important role. A particularly promising example is photocatalysis since even incremental improvements in performance in this process are bound to translate into significant cost benefits. Here, we report that semiconducting and high surface area 3D silicon replicas prepared from abundantly available diatom fossils sustain photocurrents and enable solar energy conversion.
Lopez-Delgado, R; Zhou, Y; Zazueta-Raynaud, A; Zhao, H; Pelayo, J E; Vomiero, A; Álvarez-Ramos, M E; Rosei, F; Ayon, A
2017-10-26
Silicon solar cells have captured a large portion of the total market of photovoltaic devices mostly due to their relatively high efficiency. However, Silicon exhibits limitations in ultraviolet absorption because high-energy photons are absorbed at the surface of the solar cell, in the heavily doped region, and the photo-generated electron-hole pairs need to diffuse into the junction region, resulting in significant carrier recombination. One of the alternatives to improve the absorption range involves the use of down-shifting nano-structures able to interact with the aforementioned high energy photons. Here, as a proof of concept, we use downshifting CdSe/CdS quantum dots to improve the performance of a silicon solar cell. The incorporation of these nanostructures triggered improvements in the short circuit current density (J sc , from 32.5 to 37.0 mA/cm 2 ). This improvement led to a ∼13% increase in the power conversion efficiency (PCE), from 12.0 to 13.5%. Our results demonstrate that the application of down-shifting materials is a viable strategy to improve the efficiency of Silicon solar cells with mass-compatible techniques that could serve to promote their widespread utilization.
Fabrication and surface-modification of implantable microprobes for neuroscience studies
NASA Astrophysics Data System (ADS)
Cao, H.; Nguyen, C. M.; Chiao, J. C.
2012-06-01
In this work implantable micro-probes for central nervous system (CNS) studies were developed on silicon and polyimide substrates. The probes which contained micro-electrode arrays with different surface modifications were designed for implantation in the CNS. The electrode surfaces were modified with nano-scale structures that could greatly increase the active surface area in order to enhance the electrochemical current outputs while maintaining micro-scale dimensions of the electrodes and probes. The electrodes were made of gold or platinum, and designed with different sizes. The silicon probes were modified by silicon nanowires fabricated with the vapor-liquid-solid mechanism at high temperatures. With polyimide substrates, the nanostructure modification was carried out by applying concentrated gold or silver colloid solutions onto the micro-electrodes at room temperature. The surfaces of electrodes before and after modification were observed by scanning electron microscopy. The silicon nanowire-modified surface was characterized by cyclic voltammetry. Experiments were carried out to investigate the improvement in sensing performance. The modified electrodes were tested with H2O2, electrochemical L-glutamate and dopamine. Comparisons between electrodes with and without nanostructure modification were conducted showing that the modifications have enhanced the signal outputs of the electrochemical neurotransmitter sensors.
Silicon hollow sphere anode with enhanced cycling stability by a template-free method
NASA Astrophysics Data System (ADS)
Chen, Song; Chen, Zhuo; Luo, Yunjun; Xia, Min; Cao, Chuanbao
2017-04-01
Silicon is a promising alternative anode material since it has a ten times higher theoretical specific capacity than that of a traditional graphite anode. However, the poor cycling stability due to the huge volume change of Si during charge/discharge processes has seriously hampered its widespread application. To address this challenge, we design a silicon hollow sphere nanostructure by selective etching and a subsequent magnesiothermic reduction. The Si hollow spheres exhibit enhanced electrochemical properties compared to the commercial Si nanoparticles. The initial discharge and charge capacities of the Si hollow sphere anode are 2215.8 mAh g-1 and 1615.1 mAh g-1 with a high initial coulombic efficiency (72%) at a current density of 200 mA g-1, respectively. In particular, the reversible capacity is 1534.5 mAh g-1 with a remarkable 88% capacity retention against the second cycle after 100 cycles, over four times the theoretical capacity of the traditional graphite electrode. Therefore, our work demonstrates the considerable potential of silicon structures for displacing commercial graphite, and might open up new opportunities to rationally design various nanostructured materials for lithium ion batteries.
Recent Advances on Luminescent Enhancement-Based Porous Silicon Biosensors.
Jenie, S N Aisyiyah; Plush, Sally E; Voelcker, Nicolas H
2016-10-01
Luminescence-based detection paradigms have key advantages over other optical platforms such as absorbance, reflectance or interferometric based detection. However, autofluorescence, low quantum yield and lack of photostability of the fluorophore or emitting molecule are still performance-limiting factors. Recent research has shown the need for enhanced luminescence-based detection to overcome these drawbacks while at the same time improving the sensitivity, selectivity and reducing the detection limits of optical sensors and biosensors. Nanostructures have been reported to significantly improve the spectral properties of the emitting molecules. These structures offer unique electrical, optic and magnetic properties which may be used to tailor the surrounding electrical field of the emitter. Here, the main principles behind luminescence and luminescence enhancement-based detections are reviewed, with an emphasis on europium complexes as the emitting molecule. An overview of the optical porous silicon microcavity (pSiMC) as a biosensing platform and recent proof-of-concept examples on enhanced luminescence-based detection using pSiMCs are provided and discussed.
Non-plasmonic nanoantennas for surface enhanced spectroscopies with ultra-low heat conversion
Caldarola, Martín; Albella, Pablo; Cortés, Emiliano; Rahmani, Mohsen; Roschuk, Tyler; Grinblat, Gustavo; Oulton, Rupert F.; Bragas, Andrea V.; Maier, Stefan A.
2015-01-01
Nanoplasmonics has recently revolutionized our ability to control light on the nanoscale. Using metallic nanostructures with tailored shapes, it is possible to efficiently focus light into nanoscale field ‘hot spots'. High field enhancement factors have been achieved in such optical nanoantennas, enabling transformative science in the areas of single molecule interactions, highly enhanced nonlinearities and nanoscale waveguiding. Unfortunately, these large enhancements come at the price of high optical losses due to absorption in the metal, severely limiting real-world applications. Via the realization of a novel nanophotonic platform based on dielectric nanostructures to form efficient nanoantennas with ultra-low light-into-heat conversion, here we demonstrate an approach that overcomes these limitations. We show that dimer-like silicon-based single nanoantennas produce both high surface enhanced fluorescence and surface enhanced Raman scattering, while at the same time generating a negligible temperature increase in their hot spots and surrounding environments. PMID:26238815
Lopez, Thomas; Massenot, Sébastien; Estribeau, Magali; Magnan, Pierre; Pardo, Fabrice; Pelouard, Jean-Luc
2016-04-18
This paper deals with the integration of metallic and dielectric nanostructured planar lenses into a pixel from a silicon based CMOS image sensor, for a monochromatic application at 1.064 μm. The first is a Plasmonic Lens, based on the phase delay through nanoslits, which has been found to be hardly compatible with current CMOS technology and exhibits a notable metallic absorption. The second is a dielectric Phase-Fresnel Lens integrated at the top of a pixel, it exhibits an Optical Efficiency (OE) improved by a few percent and an angle of view of 50°. The third one is a metallic diffractive lens integrated inside a pixel, which shows a better OE and an angle of view of 24°. The last two lenses exhibit a compatibility with a spectral band close to 1.064 μm.
Non-plasmonic nanoantennas for surface enhanced spectroscopies with ultra-low heat conversion.
Caldarola, Martín; Albella, Pablo; Cortés, Emiliano; Rahmani, Mohsen; Roschuk, Tyler; Grinblat, Gustavo; Oulton, Rupert F; Bragas, Andrea V; Maier, Stefan A
2015-08-04
Nanoplasmonics has recently revolutionized our ability to control light on the nanoscale. Using metallic nanostructures with tailored shapes, it is possible to efficiently focus light into nanoscale field 'hot spots'. High field enhancement factors have been achieved in such optical nanoantennas, enabling transformative science in the areas of single molecule interactions, highly enhanced nonlinearities and nanoscale waveguiding. Unfortunately, these large enhancements come at the price of high optical losses due to absorption in the metal, severely limiting real-world applications. Via the realization of a novel nanophotonic platform based on dielectric nanostructures to form efficient nanoantennas with ultra-low light-into-heat conversion, here we demonstrate an approach that overcomes these limitations. We show that dimer-like silicon-based single nanoantennas produce both high surface enhanced fluorescence and surface enhanced Raman scattering, while at the same time generating a negligible temperature increase in their hot spots and surrounding environments.
Porosity and thickness effect of porous silicon layer on photoluminescence spectra
NASA Astrophysics Data System (ADS)
Husairi, F. S.; Eswar, K. A.; Guliling, Muliyadi; Khusaimi, Z.; Rusop, M.; Abdullah, S.
2018-05-01
The porous silicon nanostructures was prepared by electrochemical etching of p-type silicon wafer. Porous silicon prepared by using different current density and fix etching time with assistance of halogen lamp. The physical structure of porous silicon measured by the parameters used which know as experimental factor. In this work, we select one of those factors to correlate which optical properties of porous silicon. We investigated the surface morphology by using Surface Profiler (SP) and photoluminescence using Photoluminescence (PL) spectrometer. Different physical characteristics of porous silicon produced when current density varied. Surface profiler used to measure the thickness of porous and the porosity calculated using mass different of silicon. Photoluminescence characteristics of porous silicon depend on their morphology because the size and distribution of pore its self will effect to their exciton energy level. At J=30 mA/cm2 the shorter wavelength produced and it followed the trend of porosity with current density applied.
Qu, Yongquan; Zhou, Hailong; Duan, Xiangfeng
2011-01-01
In this minreview, we summarize recent progress in the synthesis, properties and applications of a new type of one-dimensional nanostructures — single crystalline porous silicon nanowires. The growth of porous silicon nanowires starting from both p- and n-type Si wafers with a variety of dopant concentrations can be achieved through either one-step or two-step reactions. The mechanistic studies indicate the dopant concentration of Si wafers, oxidizer concentration, etching time and temperature can affect the morphology of the as-etched silicon nanowires. The porous silicon nanowires are both optically and electronically active and have been explored for potential applications in diverse areas including photocatalysis, lithium ion battery, gas sensor and drug delivery. PMID:21869999
Cho, Jeong-Hyun; Picraux, S Tom
2013-01-01
It is well-known that one-dimensional nanostructures reduce pulverization of silicon (Si)-based anode materials during Li ion cycling because they allow lateral relaxation. However, even with improved designs, Si nanowire-based structures still exhibit limited cycling stability for extended numbers of cycles, with the specific capacity retention with cycling not showing significant improvements over commercial carbon-based anode materials. We have found that one important reason for the lack of long cycling stability can be the presence of milli- and microscale Si islands which typically form under nanowire arrays during their growth. Stress buildup in these Si island underlayers with cycling results in cracking, and the loss of specific capacity for Si nanowire anodes, due to progressive loss of contact with current collectors. We show that the formation of these parasitic Si islands for Si nanowires grown directly on metal current collectors can be avoided by growth through anodized aluminum oxide templates containing a high density of sub-100 nm nanopores. Using this template approach we demonstrate significantly enhanced cycling stability for Si nanowire-based lithium-ion battery anodes, with retentions of more than ~1000 mA·h/g discharge capacity over 1100 cycles.
Lim, Young-Kyun; Lee, Eung-Seok; Lee, Choong-Hyun; Lim, Dae-Soon
2018-08-10
In the study, a hollow boron-doped diamond (BDD) nanostructure electrode is fabricated to increase the reactive surface area for electrochemical applications. Tungsten oxide nanorods are deposited on the silicon substrate as a template by the hot filament chemical vapor deposition (HFCVD) method. The template is coated with a 100 nm BDD layer deposited by HFCVD to form a core-shell nanostructure. The WO x core is finally electrochemically dissolved to form hollow BDD nanostructure. The fabricated hollow BDD nanostructure electrode is investigated via scanning electron microscopy, transmission electron microscopy, and Raman spectroscopy. The specific surface areas of the electrodes were analyzed and compared by using Brunauer-Emmett-Teller method. Furthermore, cyclic voltammetry and chronocoulometry are used to investigate the electrochemical characteristics and the reactive surface area of the as-prepared hollow BDD nanostructure electrode. A hollow BDD nanostructure electrode exhibits a reactive area that is 15 times that of a planar BDD thin electrode.
Mariani, Stefano; Strambini, Lucanos Marsilio; Barillaro, Giuseppe
2018-03-23
Herein, we provide the first experimental evidence on the use of electrical double layer (EDL)-induced accumulation of charged ions (using both Na + and K + ions in water as the model) onto a negatively charged nanostructured surface (e.g., thermally growth SiO 2 )-Ion Surface Accumulation, ISA-as a means of improving performance of nanostructured porous silicon (PSi) interferometers for optical refractometric applications. Nanostructured PSi interferometers are very promising optical platforms for refractive index sensing due to PSi huge specific surface (hundreds of m 2 per gram) and low preparation cost (less than $0.01 per 8 in. silicon wafer), though they have shown poor resolution ( R) and detection limit (DL) (on the order of 10 -4 -10 -5 RIU) compared to other plasmonic and photonic platforms ( R and DL on the order of 10 -7 -10 -8 RIU). This can be ascribed to both low sensitivity and high noise floor of PSi interferometers when bulk refractive index variation of the solution infiltrating the nanopores either approaches or is below 10 -4 RIU. Electrical double layer-induced ion surface accumulation (EDL-ISA) on oxidized PSi interferometers allows the interferometer output signal (spectral interferogram) to be impressively amplified at bulk refractive index variation below 10 -4 RIU, increasing, in turn, sensitivity up to 2 orders of magnitude and allowing reliable measurement of refractive index variations to be carried out with both DL and R of 10 -7 RIU. This represents a 250-fold-improvement (at least) with respect to the state-of-the-art literature on PSi refractometers and pushes PSi interferometer performance to that of state-of-the-art ultrasensitive photonics/plasmonics refractive index platforms.
2015-03-16
AFRL-OSR-VA-TR-2015-0088 Theoretical Study of Novel Nanostructured Materials for Lithium - Ion Batteries Mario Sanchez-Vazquez CENTRO DE INVESTIGACION...of Novel Nanostructured Materials to Be Utilized as Anodes for Lithium - ion Batteries 5a. CONTRACT NUMBER 5b. GRANT NUMBER FA9550-13-1-0175 5c...as anodes for Lithium - ion batteries Final Report Nancy Perez-Peralta and Mario Sanchez-Vazquez Abstract In order to find out if silicon
Atomistic Design and Simulations of Nanoscale Machines and Assembly
NASA Technical Reports Server (NTRS)
Goddard, William A., III; Cagin, Tahir; Walch, Stephen P.
2000-01-01
Over the three years of this project, we made significant progress on critical theoretical and computational issues in nanoscale science and technology, particularly in:(1) Fullerenes and nanotubes, (2) Characterization of surfaces of diamond and silicon for NEMS applications, (3) Nanoscale machine and assemblies, (4) Organic nanostructures and dendrimers, (5) Nanoscale confinement and nanotribology, (6) Dynamic response of nanoscale structures nanowires (metals, tubes, fullerenes), (7) Thermal transport in nanostructures.
Mizuno, Hidenori; Sai, Hitoshi; Matsubara, Koji; Takato, Hidetaka; Kondo, Michio
2015-01-01
One of the potential applications of metal nanostructures is light trapping in solar cells, where unique optical properties of nanosized metals, commonly known as plasmonic effects, play an important role. Research in this field has, however, been impeded owing to the difficulty of fabricating devices containing the desired functional metal nanostructures. In order to provide a viable strategy to this issue, we herein show a transfer printing-based approach that allows the quick and low-cost integration of designed metal nanostructures with a variety of device architectures, including solar cells. Nanopillar poly(dimethylsiloxane) (PDMS) stamps were fabricated from a commercially available nanohole plastic film as a master mold. On this nanopatterned PDMS stamps, Ag films were deposited, which were then transfer-printed onto block copolymer (binding layer)-coated hydrogenated microcrystalline Si (µc-Si:H) surface to afford ordered Ag nanodisk structures. It was confirmed that the resulting Ag nanodisk-incorporated µc-Si:H solar cells show higher performances compared to a cell without the transfer-printed Ag nanodisks, thanks to plasmonic light trapping effect derived from the Ag nanodisks. Because of the simplicity and versatility, further device application would also be feasible thorough this approach. PMID:26575244
Luo, Wei; Wang, Xingfeng; Meyers, Colin; Wannenmacher, Nick; Sirisaksoontorn, Weekit; Lerner, Michael M.; Ji, Xiulei
2013-01-01
Magnesiothermic reduction can directly convert SiO2 into Si nanostructures. Despite intense efforts, efficient fabrication of highly nanoporous silicon by Mg still remains a significant challenge due to the exothermic reaction nature. By employing table salt (NaCl) as a heat scavenger for the magnesiothermic reduction, we demonstrate an effective route to convert diatom (SiO2) and SiO2/GeO2 into nanoporous Si and Si/Ge composite, respectively. Fusion of NaCl during the reaction consumes a large amount of heat that otherwise collapses the nano-porosity of products and agglomerates silicon domains into large crystals. Our methodology is potentially competitive for a practical production of nanoporous Si-based materials. PMID:23860418
Luo, Wei; Wang, Xingfeng; Meyers, Colin; Wannenmacher, Nick; Sirisaksoontorn, Weekit; Lerner, Michael M; Ji, Xiulei
2013-01-01
Magnesiothermic reduction can directly convert SiO2 into Si nanostructures. Despite intense efforts, efficient fabrication of highly nanoporous silicon by Mg still remains a significant challenge due to the exothermic reaction nature. By employing table salt (NaCl) as a heat scavenger for the magnesiothermic reduction, we demonstrate an effective route to convert diatom (SiO2) and SiO2/GeO2 into nanoporous Si and Si/Ge composite, respectively. Fusion of NaCl during the reaction consumes a large amount of heat that otherwise collapses the nano-porosity of products and agglomerates silicon domains into large crystals. Our methodology is potentially competitive for a practical production of nanoporous Si-based materials.
Guinan, Taryn M; Gustafsson, Ove J R; McPhee, Gordon; Kobus, Hilton; Voelcker, Nicolas H
2015-11-17
Nanostructure imaging mass spectrometry (NIMS) using porous silicon (pSi) is a key technique for molecular imaging of exogenous and endogenous low molecular weight compounds from fingerprints. However, high-mass-accuracy NIMS can be difficult to achieve as time-of-flight (ToF) mass analyzers, which dominate the field, cannot sufficiently compensate for shifts in measured m/z values. Here, we show internal recalibration using a thin layer of silver (Ag) sputter-coated onto functionalized pSi substrates. NIMS peaks for several previously reported fingerprint components were selected and mass accuracy was compared to theoretical values. Mass accuracy was improved by more than an order of magnitude in several cases. This straightforward method should form part of the standard guidelines for NIMS studies for spatial characterization of small molecules.
Mechanisms of Superplastic Deformation of Nanocrystalline Silicon Carbide Ceramics
2012-08-01
These included the following: standard hot isostatic pressing (HIP), spark plasma sintering , ultra-high pressure HIP, and a multianvil pressure...96.8 2270 Multianvil apparatus 1200 3000 94.8 1130 Note: SPS = spark plasma sintering . 2 Figure 1. Ultra-high pressure HIP; 1600 °C, 980...strain rate sensitivity and flow stress. 15. SUBJECT TERMS silicon carbide, nanostructure, sintering , hot isostatic pressing, hardness 16. SECURITY
DOE Office of Scientific and Technical Information (OSTI.GOV)
Gemini, Laura; Department of Physics, Graduate School of Science, Kyoto University, 606-85802 Kyoto; FNSPE, Czech Technical University in Prague, 11519 Prague
Periodic structures were generated on Si and SiC surfaces by irradiation with femtosecond laser pulses. Self-organized structures with spatial periodicity of approximately 600 nm appear on silicon and silicon carbide in the laser fluence range just above the ablation threshold and upon irradiation with a large number of pulses. As in the case of metals, the dependence of the spatial periodicity on laser fluence can be explained by the parametric decay of laser light into surface plasma waves. The results show that the proposed model might be universally applicable to any solid state material.
Kosović, Marin; Balarin, Maja; Ivanda, Mile; Đerek, Vedran; Marciuš, Marijan; Ristić, Mira; Gamulin, Ozren
2015-12-01
Microporous and macro-mesoporous silicon templates for surface-enhanced Raman scattering (SERS) substrates were produced by anodization of low doped p-type silicon wafers. By immersion plating in AgNO3, the templates were covered with silver metallic film consisting of different silver nanostructures. Scanning electron microscopy (SEM) micrographs of these SERS substrates showed diverse morphology with significant difference in an average size and size distribution of silver nanoparticles. Ultraviolet-visible-near-infrared (UV-Vis-NIR) reflection spectroscopy showed plasmonic absorption at 398 and 469 nm, which is in accordance with the SEM findings. The activity of the SERS substrates was tested using rhodamine 6G (R6G) dye molecules and 514.5 nm laser excitation. Contrary to the microporous silicon template, the SERS substrate prepared from macro-mesoporous silicon template showed significantly broader size distribution of irregular silver nanoparticles as well as localized surface plasmon resonance closer to excitation laser wavelength. Such silver morphology has high SERS sensitivity that enables ultralow concentration detection of R6G dye molecules up to 10(-15) M. To our knowledge, this is the lowest concentration detected of R6G dye molecules on porous silicon-based SERS substrates, which might even indicate possible single molecule detection.
Fabrication of n-type Si nanostructures by direct nanoimprinting with liquid-Si ink
NASA Astrophysics Data System (ADS)
Takagishi, Hideyuki; Masuda, Takashi; Yamazaki, Ken; Shimoda, Tatsuya
2018-01-01
Nanostructures of n-type amorphous silicon (a-Si) and polycrystalline silicon (poly-Si) with a height of 270 nm and line widths of 110-165 nm were fabricated directly onto a substrate through a simple imprinting process that does not require vacuum conditions or photolithography. The n-type Liquid-Si ink was synthesized via photopolymerization of cyclopentasilane (Si5H10) and white phosphorus (P4). By raising the temperature from 160 °C to 200 °C during the nanoimprinting process, well-defined angular patterns were fabricated without any cracking, peeling, or deflections. After the nanoimprinting process, a-Si was produced by heating the nanostructures at 400°C-700 °C, and poly-Si was produced by heating at 800 °C. The dopant P diffuses uniformly in the Si films, and its concentration can be controlled by varying the concentration of P4 in the ink. The specific resistance of the n-type poly-Si pattern was 7.0 × 10-3Ω ṡ cm, which is comparable to the specific resistance of flat n-type poly-Si films.
Qi, Zhiyang; Zhai, Yusheng; Wen, Long; Wang, Qilong; Chen, Qin; Iqbal, Sami; Chen, Guangdian; Xu, Ji; Tu, Yan
2017-05-22
The heterojunction between metal and silicon (Si) is an attractive route to extend the response of Si-based photodiodes into the near-infrared (NIR) region, so-called Schottky barrier diodes. Photons absorbed into a metallic nanostructure excite the surface plasmon resonances (SPRs), which can be damped non-radiatively through the creation of hot electrons. Unfortunately, the quantum efficiency of hot electron detectors remains low due to low optical absorption and poor electron injection efficiency. In this study, we propose an efficient and low-cost plasmonic hot electron NIR photodetector based on a Au nanoparticle (Au NP)-decorated Si pyramid Schottky junction. The large-area and lithography-free photodetector is realized by using an anisotropic chemical wet etching and rapid thermal annealing (RTA) of a thin Au film. We experimentally demonstrate that these hot electron detectors have broad photoresponsivity spectra in the NIR region of 1200-1475 nm, with a low dark current on the order of 10 -5 A cm -2 . The observed responsivities enable these devices to be competitive with other reported Si-based NIR hot electron photodetectors using perfectly periodic nanostructures. The improved performance is attributed to the pyramid surface which can enhance light trapping and the localized electric field, and the nano-sized Au NPs which are beneficial for the tunneling of hot electrons. The simple and large-area preparation processes make them suitable for large-scale thermophotovoltaic cell and low-cost NIR detection applications.
NASA Astrophysics Data System (ADS)
Qi, Zhiyang; Zhai, Yusheng; Wen, Long; Wang, Qilong; Chen, Qin; Iqbal, Sami; Chen, Guangdian; Xu, Ji; Tu, Yan
2017-07-01
The heterojunction between metal and silicon (Si) is an attractive route to extend the response of Si-based photodiodes into the near-infrared (NIR) region, so-called Schottky barrier diodes. Photons absorbed into a metallic nanostructure excite the surface plasmon resonances (SPRs), which can be damped non-radiatively through the creation of hot electrons. Unfortunately, the quantum efficiency of hot electron detectors remains low due to low optical absorption and poor electron injection efficiency. In this study, we propose an efficient and low-cost plasmonic hot electron NIR photodetector based on a Au nanoparticle (Au NP)-decorated Si pyramid Schottky junction. The large-area and lithography-free photodetector is realized by using an anisotropic chemical wet etching and rapid thermal annealing (RTA) of a thin Au film. We experimentally demonstrate that these hot electron detectors have broad photoresponsivity spectra in the NIR region of 1200-1475 nm, with a low dark current on the order of 10-5 A cm-2. The observed responsivities enable these devices to be competitive with other reported Si-based NIR hot electron photodetectors using perfectly periodic nanostructures. The improved performance is attributed to the pyramid surface which can enhance light trapping and the localized electric field, and the nano-sized Au NPs which are beneficial for the tunneling of hot electrons. The simple and large-area preparation processes make them suitable for large-scale thermophotovoltaic cell and low-cost NIR detection applications.
NASA Astrophysics Data System (ADS)
Jeng, Yeau-Ren; Tsai, Ping-Chi; Fang, Te-Hua
2005-02-01
This paper adopts the Tersoff-Brenner many-body potential function to perform molecular dynamics simulations of the tensile and fatigue behaviors of hypothetical silicon-based tubular nanostructures at various temperatures, strain rates, and vacancy percentages. The tensile test results indicate that with a predicted Young’s modulus of approximately 60GPa , silicon nanotubes (SiNTs) are significantly less stiff than conventional carbon nanotubes. It is observed that the presence of hydrogen has a significant influence on the tensile strength of SiNTs . Additionally, the present results indicate that the tensile strength clearly decreases with increasing temperature and with decreasing strain rate. Moreover, it is shown that the majority of the mechanical properties considered in the present study decrease with an increasing vacancy percentage. Regarding the fatigue tests, this study uses a standard theoretical model to derive curves of amplitude stress versus number of cycles for the current nanotubes. The results demonstrate that the fatigue limit of SiNTs increases with a decreasing vacancy percentage and with increasing temperature.
NASA Astrophysics Data System (ADS)
Ahmadivand, Arash; Pala, Nezih; Golmohammadi, Saeed
2015-05-01
Silicon nanorods in arrays on a glass substrate that are situated through a gap between two gold slots have been utilized to design efficient long-range optical nanostructures as splitters to function at near infrared spectrum. Designing silicon arrays in T and Y-shape regimes, we examined the optical responses of the proposed devices during guiding of transverse and longitudinal electric modes (TE and LE-modes). Transmission loss factors, group velocity of guided waves, the ratio of transmitted power, and the decay length for both of the devices have been reported using numerical methods. We showed that the proposed structures have strong potentials to employ in designing photonic structures with lower ratio of energy extinction and low radiation losses. The overall length of the structures is 2.2 μm which verifies its compaction in comparison to analogous splitters that are designed based on DLSPPWs and nanoparticle-based waveguides devices. Proposed subwavelength optical power transportation mechanisms are highly compatible to employ in photonic integration circuit (PIC) systems.
Studies of Silicon Nanowires with Different Parameters — By PECVD
NASA Astrophysics Data System (ADS)
Leela, S.; Abirami, T.; Bhattacharya, Sekhar; Ahmed, Nafis; Monika, S.; Priya, R. Nivedha
2016-10-01
One-dimensional nanostructures such as nanowires have a wide range of applications. Silicon is the best competitive material for the carbon nanotubes (CNTs). Carbon and silicon have some similar and peculiar properties. Silicon nanowires (SiNWs) were synthesized using plasma enhanced chemical vapor deposition (PECVD) on p-Si (111) wafer. Gold is used as a catalyst for the growth of the SiNWs. Based on our fundamental understanding of vapor-liquid-solid (VLS) nanowire growth mechanism, different levels of growth controls have been achieved. Gold catalyst deposited and annealed at different temperatures with different thicknesses (450∘C, 500∘C and 550∘C, 600∘C, 650∘C for 4min and 8min and 3nm, 5nm, 30nm Au thickness). SiNW grown by PECVD with different carrier gases varies with flow rate. We observed the different dimensions of Si nanowires by FESEM and optimized the growth parameters to get the vertical aligned and singular Si nanowires. Optical phonon of the Si nanowires and crystallinity nature were identified by Raman spectral studies.
Linear Hyperfine Tuning of Donor Spins in Silicon Using Hydrostatic Strain
NASA Astrophysics Data System (ADS)
Mansir, J.; Conti, P.; Zeng, Z.; Pla, J. J.; Bertet, P.; Swift, M. W.; Van de Walle, C. G.; Thewalt, M. L. W.; Sklenard, B.; Niquet, Y. M.; Morton, J. J. L.
2018-04-01
We experimentally study the coupling of group V donor spins in silicon to mechanical strain, and measure strain-induced frequency shifts that are linear in strain, in contrast to the quadratic dependence predicted by the valley repopulation model (VRM), and therefore orders of magnitude greater than that predicted by the VRM for small strains |ɛ |<10-5. Through both tight-binding and first principles calculations we find that these shifts arise from a linear tuning of the donor hyperfine interaction term by the hydrostatic component of strain and achieve semiquantitative agreement with the experimental values. Our results provide a framework for making quantitative predictions of donor spins in silicon nanostructures, such as those being used to develop silicon-based quantum processors and memories. The strong spin-strain coupling we measure (up to 150 GHz per strain, for Bi donors in Si) offers a method for donor spin tuning—shifting Bi donor electron spins by over a linewidth with a hydrostatic strain of order 10-6—as well as opportunities for coupling to mechanical resonators.
DOE Office of Scientific and Technical Information (OSTI.GOV)
Pavlikov, A. V., E-mail: pavlikov@physics.msu.ru; Latukhina, N. V.; Chepurnov, V. I.
Silicon-carbide (SiC) nanowire structures 40–50 nm in diameter are produced by the high-temperature carbonization of porous silicon and silicon nanowires. The SiC nanowires are studied by scanning electron microscopy, X-ray diffraction analysis, Raman spectroscopy, and infrared reflectance spectroscopy. The X-ray structural and Raman data suggest that the cubic 3C-SiC polytype is dominant in the samples under study. The shape of the infrared reflectance spectrum in the region of the reststrahlen band 800–900 cm{sup –1} is indicative of the presence of free charge carriers. The possibility of using SiC nanowires in microelectronic, photonic, and gas-sensing devices is discussed.
Electroluminescence and transport properties in amorphous silicon nanostructures
NASA Astrophysics Data System (ADS)
Irrera, Alessia; Iacona, Fabio; Crupi, Isodiana; Presti, Calogero D.; Franzò, Giorgia; Bongiorno, Corrado; Sanfilippo, Delfo; Di Stefano, Gianfranco; Piana, Angelo; Fallica, Pier Giorgio; Canino, Andrea; Priolo, Francesco
2006-03-01
We report the results of a detailed study on the structural, electrical and optical properties of light emitting devices based on amorphous Si nanostructures. Amorphous nanostructures may constitute an interesting system for the monolithic integration of optical and electrical functions in Si ULSI technology. In fact, they exhibit an intense room temperature electroluminescence (EL), with the advantage of being formed at a temperature of 900 °C, while at least 1100 °C is needed for the formation of Si nanocrystals. Optical and electrical properties of amorphous Si nanocluster devices have been studied in the temperature range between 30 and 300 K. The EL is seen to have a bell-shaped trend as a function of temperature with a maximum at around 60 K. The efficiency of these devices is comparable to that found in devices based on Si nanocrystals, although amorphous nanostructures exhibit peculiar working conditions (very high current densities and low applied voltages). Time resolved EL measurements demonstrate the presence of a short lifetime, only partially due to the occurrence of non-radiative phenomena, since the very small amorphous clusters formed at 900 °C are characterized by a short radiative lifetime. By forcing a current through the device a phenomenon of charge trapping in the Si nanostructures has been observed. Trapped charges affect luminescence through an Auger-type non-radiative recombination of excitons. Indeed, it is shown that unbalanced injection of carriers (electrons versus holes) is one of the main processes limiting luminescence efficiency. These data will be reported and the advantages and limitations of this approach will be discussed.
Effects associated with nanostructure fabrication using in situ liquid cell TEM technology
Chen, Xin; Zhou, Lihui; Wang, Ping; ...
2015-07-28
We studied silicon, carbon, and SiC x nanostructures fabricated using liquid-phase electron-beam-induced deposition technology in transmission electron microscopy systems. Nanodots obtained from fixed electron beam irradiation followed a universal size versus beam dose trend, with precursor concentrations from pure SiCl 4 to 0 % SiCl 4 in CH 2Cl 2, and electron beamintensity ranges of two orders of magnitude, showing good controllability of the deposition. Secondary electrons contributed to the determination of the lateral sizes of the nanostructures, while the primary beam appeared to have an effect in reducing the vertical growth rate. These results can be used to generatemore » donut-shaped nanostructures. Using a scanning electron beam, line structures with both branched and unbranched morphologies were also obtained. As a result, the liquid-phase electron-beam induced deposition technology is shown to be an effective tool for advanced nanostructured material generation.« less
Tran, Minh; Whale, Alison
2018-01-01
Noble transition metals, like palladium (Pd) and platinum (Pt), have been well-known for their excellent catalytic and electrochemical properties. However, they have been considered non-active for surface enhanced Raman spectroscopy (SERS). In this work, we explore the scattering contributions of Pd and Pt for the detection of organic molecules. The Pd and Pt nanostructures were synthesized on silicon substrate using a modified galvanic displacement method. The results show Pt nanoparticles and dendritic Pd nanostructures with controlled density and size. The influence of surfactants, including sodium dodecyl sulfate and cetyltrimethylammonium bromide, on the size and morphology of the nanostructures was investigated. The Pd and Pt nanostructures with a combination of large size and high density were then used to explore their applicability for the detection of 10−5 M Rhodamine 6G and 10−2 M paraoxon. PMID:29316659
3D silicon shapes through bulk nano structuration by focused ion beam implantation and wet etching
NASA Astrophysics Data System (ADS)
Salhi, Billel; Troadec, David; Boukherroub, Rabah
2017-05-01
The work presented in this paper concerns the synthesis of silicon (Si) 2D and 3D nanostructures using the delayed effect, caused by implanted Ga ions, on the dissolution of Si in aqueous solutions of tetramethylammonium hydroxide (TMAH). The crystalline silicon substrates (100) are first cleaned and then hydrogenated by immersion in an aqueous solution of hydrofluoric acid. The ion implantation is then carried out by a focused ion beam by varying the dose and the exposure time. Chemical etching in aqueous solutions of TMAH at 80 °C leads to the selective dissolution of the Si planes not exposed to the ions. The preliminary results obtained in the laboratory made it possible to optimize the experimental conditions for the synthesis of 2D and 3D nanoobjects of controlled shape and size. Analysis by transmission electron microscopy and energy dispersive x-ray showed the amorphous nature of the nanostructures obtained and the presence of 5%-20% Ga in these nanoobjects. The first experiments of recrystallization by rapid thermal annealing allowed to reconstitute the crystal structure of these nanoobjects.
3D silicon shapes through bulk nano structuration by focused ion beam implantation and wet etching.
Salhi, Billel; Troadec, David; Boukherroub, Rabah
2017-05-19
The work presented in this paper concerns the synthesis of silicon (Si) 2D and 3D nanostructures using the delayed effect, caused by implanted Ga ions, on the dissolution of Si in aqueous solutions of tetramethylammonium hydroxide (TMAH). The crystalline silicon substrates (100) are first cleaned and then hydrogenated by immersion in an aqueous solution of hydrofluoric acid. The ion implantation is then carried out by a focused ion beam by varying the dose and the exposure time. Chemical etching in aqueous solutions of TMAH at 80 °C leads to the selective dissolution of the Si planes not exposed to the ions. The preliminary results obtained in the laboratory made it possible to optimize the experimental conditions for the synthesis of 2D and 3D nanoobjects of controlled shape and size. Analysis by transmission electron microscopy and energy dispersive x-ray showed the amorphous nature of the nanostructures obtained and the presence of 5%-20% Ga in these nanoobjects. The first experiments of recrystallization by rapid thermal annealing allowed to reconstitute the crystal structure of these nanoobjects.
Ex Situ Investigation of Anisotropic Interconnection in Silicon-Titanium-Nickel Alloy Anode Material
Cho, Jong -Soo; Alaboina, Pankaj Kumar; Kang, Chan -Soon; ...
2017-03-10
Herein we investigate the nanostructural evolution of Silicon-Titanium-Nickel (Si-Ti-Ni) ternary alloy material synthesized by melt spinning process for advanced lithium-ion battery anode. The synthesized material was found to have nano-Silicon particles dispersed in the Ti 4Ni 4Si 7 (STN) alloy buffering matrix and was characterized by X-ray diffraction (XRD), High resolution- transmission electron microscope (HR-TEM), Scanning transmission electron microscopes - energy dispersive X-ray spectrometer (STEM-EDS), and electrochemical performance test. The role of STN matrix is to accommodate the volume expansion stresses of the dispersed Si nanoparticles. However, an interesting behavior was observed during cycling. The Si nanoparticles were observed tomore » form interconnection channels growing through the weak STN matrix cracks and evolving to a network isolating the STN matrix into small puddles. In conclusion, this unique nanostructural evolution of Si particles and isolation of the STN matrix failing to offer significant buffering effect to the grown Si network eventually accelerates more volume expansions during cycling due to less mechanical confinement and leads to performance degradation and poor cycle stability.« less
Rapid Growth of Nanostructured Diamond Film on Silicon and Ti–6Al–4V Alloy Substrates
Samudrala, Gopi K.; Vohra, Yogesh K.; Walock, Michael J.; Miles, Robin
2014-01-01
Nanostructured diamond (NSD) films were grown on silicon and Ti–6Al–4V alloy substrates by microwave plasma chemical vapor deposition (MPCVD). NSD Growth rates of 5 μm/h on silicon, and 4 μm/h on Ti–6Al–4V were achieved. In a chemistry of H2/CH4/N2, varying ratios of CH4/H2 and N2/CH4 were employed in this research and their effect on the resulting diamond films were studied by X-ray photoelectron spectroscopy, Raman spectroscopy, scanning electron microscopy, and atomic force microscopy. As a result of modifying the stock cooling stage of CVD system, we were able to utilize plasma with high power densities in our NSD growth experiments, enabling us to achieve high growth rates. Substrate temperature and N2/CH4 ratio have been found to be key factors in determining the diamond film quality. NSD films grown as part of this study were shown to contain 85% to 90% sp3 bonded carbon. PMID:28788461
Surface Coatings for Gas Detection via Porous Silicon
NASA Astrophysics Data System (ADS)
Ozdemir, Serdar; Li, Ji-Guang; Gole, James
2009-03-01
Nanopore covered microporous silicon interfaces have been formed via an electrochemical etch for gas sensor applications. Rapid reversible and sensitive gas sensors have been fabricated. The fabricated porous silicon (PS) gas sensors display the advantages of operation at room temperature as well as at a single, readily accessible temperature with an insensitivity to temperature drift; operation in a heat-sunk configuration, ease of coating with gas-selective materials; low cost of fabrication and operation, and the ability to rapidly assess false positives by operating the sensor in a pulsed mode. The PS surface has been modified with unique coatings on the basis of a general theory in order to achieve maximum sensitivity and selectivity. Sensing of NH3, NOx and PH3 at or below the ppm level have been observed. A typical PS nanostructure coated microstructured hybrid configuration when coated with tin oxide (NOx, CO) and gold nanostructures (NH3) provides a greatly increased sensitivity to the indicated gases. Al2O3 coating of the porous silicon using atomic layer deposition and its effect on PH3 sensing has been investigated. 20-100 nm TiO2 nanoparticles have been produced using sol-gel methods to coat PS surfaces and the effects on the selectivity and the sensitivity have been studied.
DOE Office of Scientific and Technical Information (OSTI.GOV)
Ibraheam, A. S.; Al-Douri, Y., E-mail: yaldouri@yahoo.com; Hashim, U.
The study report novel sensing plat of extended quinternart materials, Cu{sub 2}Zn{sub 1-x}d{sub x}SnS{sub 4} quinternary alloy nanostructures were fabricated onto oxidized silicon substrate by sol-gel method and characterized were synthesized by X-ray diffraction (XRD). The XRD peaks were shifted towered the lower angle side with increasing cadmium content. The practical size average of the Cu{sub 2}Zn{sub 1-x}d{sub x}SnS{sub 4} quinternary alloy nanostructures between 34.55 to 63.30 nm.
Reversible creation of nanostructures between identical or different species of materials
NASA Astrophysics Data System (ADS)
Jang, Hyun-Ik; Ko, Sungho; Park, Junyong; Lee, Dong-Eon; Jeon, Seokwoo; Ahn, Chi Won; Yoo, Kwang Soo; Park, Jae Hong
2012-07-01
In this study, accurate nanostructures with various aspect ratios are created on several types of material. This work is highly applicable to the energy, optical, and nano-bio fields, for example. A silicon (Si) nano-mold is preserved using the method described, and target nanostructures are replicated reversibly and unlimitedly to or from various hard and soft materials. It is also verified that various materials can be applied to the substrates. The results confirm that the target nanostructures are successfully created in precise straight line structures and circle structures with various aspect ratios, including extremely high aspect ratios of 1:18. It is suggested that the optimal replicating and demolding process of nanostructures with high aspect ratios, which are the most problematic, could be controlled by means of the surface energy between the functional materials. Relevant numerical and analytical studies are also performed. It is possible to expand the applicability of the nanostructured mold by adopting various backing materials, including rounded substrates. The scope of the applications is extended further by transferring the nanostructures between different species of materials including metallic materials as well as identical species.
Silicon Based Mid Infrared SiGeSn Heterostructure Emitters and Detectors
2016-05-16
have investigated the surface plasmon enhancement of the GeSn p-i-n photodiode using gold metal nanostructures. We have conducted numerical...simulation of the plasmonic structure of 2D nano-hole array to tune the surface plasmon resonance into the absorption range of the GeSn active layer. Such a...diode can indeed be enhanced with the plasmonic structure on top. Within the time span of this project, we have completed one iteration of the process
Song, Zhiqian; Chang, Hucheng; Zhu, Weiqin; Xu, Chenlong; Feng, Xinjian
2015-01-01
Developing nanostructured electrocatalysts, with low overpotential, high selectivity and activity has fundamental and technical importance in many fields. We report here rhodium nanoparticle and mesoporous silicon nanowire (RhNP@mSiNW) hybrids for hydrogen peroxide (H2O2) detection with high electrocatalytic activity and selectivity. By employing electrodes that loaded with RhNP@mSiNW nanohybrids, interference caused from both many electroactive substances and dissolved oxygen were eliminated by electrochemical assaying at an optimal potential of +75 mV. Furthermore, the electrodes exhibited a high detection sensitivity of 0.53 μA/mM and fast response (< 5 s). This high-performance nanohybrid electrocatalyst has great potential for future practical application in various oxidase-base biosensors. PMID:25588953
Thermoelectric phonon-glass electron-crystal via ion beam patterning of silicon
NASA Astrophysics Data System (ADS)
Zhu, Taishan; Swaminathan-Gopalan, Krishnan; Stephani, Kelly; Ertekin, Elif
2018-05-01
Ion beam irradiation has recently emerged as a versatile approach to functional materials design. We show in this work that patterned defective regions generated by ion beam irradiation of silicon can create a phonon-glass electron-crystal (PGEC), a long-standing goal of thermoelectrics. By controlling the effective diameter of and spacing between the defective regions, molecular dynamics simulations suggest a reduction of the thermal conductivity by a factor of ˜20 is achievable. Boltzmann theory shows that the thermoelectric power factor remains largely intact in the damaged material. To facilitate the Boltzmann theory, we derive an analytical model for electron scattering with cylindrical defective regions based on partial-wave analysis. Together we predict a figure of merit of Z T ≈0.5 or more at room temperature for optimally patterned geometries of these silicon metamaterials. These findings indicate that nanostructuring of patterned defective regions in crystalline materials is a viable approach to realize a PGEC, and ion beam irradiation could be a promising fabrication strategy.
Attachment chemistry of aromatic compounds on a Silicon(100) surface
NASA Astrophysics Data System (ADS)
Henriksson, Anders; Nishiori, Daiki; Maeda, Hiroaki; Miyachi, Mariko; Yamanoi, Yoshinori; Nishihara, Hiroshi
2018-03-01
A mild method was developed for the chemical attachment of aromatic compounds directly onto a hydrogen-terminated Si(100) (H-Si(100)) surface. In the presence of palladium catalyst and base, 4-iodophenylferrocene and a π-conjugated iron complex were attached to H-Si(100) electrodes and hydrogen-terminated silicon nanowires (H-SiNWs), both of which have predominant dihydride species on their surfaces. The reactions were conducted in 1,4-dioxane at 100 °C and the immobilization of both 4-ferrocenylphenyl group and π-conjugated molecular wires were confirmed and quantified by XPS and electrochemical measurements. We reported densely packed monolayer whose surface coverage (Γ), estimated from the electrochemical measurements are in analogue to similar monolayers prepared via thermal or light induced hydrosilylation reactions with alkenes or alkynes. The increase in electrochemical response observed on nanostructured silicon surfaces corresponds well to the increase in surface area, those strongly indicating that this method may be applied for the functionalization of electrodes with a variety of surface topographies.
High-performance noncontact thermal diode via asymmetric nanostructures
NASA Astrophysics Data System (ADS)
Shen, Jiadong; Liu, Xianglei; He, Huan; Wu, Weitao; Liu, Baoan
2018-05-01
Electric diodes, though laying the foundation of modern electronics and information processing industries, suffer from ineffectiveness and even failure at high temperatures. Thermal diodes are promising alternatives to relieve above limitations, but usually possess low rectification ratios, and how to obtain a high-performance thermal rectification effect is still an open question. This paper proposes an efficient contactless thermal diode based on the near-field thermal radiation of asymmetric doped silicon nanostructures. The rectification ratio computed via exact scattering theories is demonstrated to be as high as 10 at a nanoscale gap distance and period, outperforming the counterpart flat-plate diode by more than one order of magnitude. This extraordinary performance mainly lies in the higher forward and lower reverse radiative heat flux within the low frequency band compared with the counterpart flat-plate diode, which is caused by a lower loss and smaller cut-off wavevector of nanostructures for the forward and reversed scheme, respectively. This work opens new routes to realize high performance thermal diodes, and may have wide applications in efficient thermal computing, thermal information processing, and thermal management.
Preparation of Mica and Silicon Substrates for DNA Origami Analysis and Experimentation
Pillers, Michelle A.; Shute, Rebecca; Farchone, Adam; Linder, Keenan P.; Doerfler, Rose; Gavin, Corey; Goss, Valerie; Lieberman, Marya
2015-01-01
The designed nature and controlled, one-pot synthesis of DNA origami provides exciting opportunities in many fields, particularly nanoelectronics. Many of these applications require interaction with and adhesion of DNA nanostructures to a substrate. Due to its atomically flat and easily cleaned nature, mica has been the substrate of choice for DNA origami experiments. However, the practical applications of mica are relatively limited compared to those of semiconductor substrates. For this reason, a straightforward, stable, and repeatable process for DNA origami adhesion on derivatized silicon oxide is presented here. To promote the adhesion of DNA nanostructures to silicon oxide surface, a self-assembled monolayer of 3-aminopropyltriethoxysilane (APTES) is deposited from an aqueous solution that is compatible with many photoresists. The substrate must be cleaned of all organic and metal contaminants using Radio Corporation of America (RCA) cleaning processes and the native oxide layer must be etched to ensure a flat, functionalizable surface. Cleanrooms are equipped with facilities for silicon cleaning, however many components of DNA origami buffers and solutions are often not allowed in them due to contamination concerns. This manuscript describes the set-up and protocol for in-lab, small-scale silicon cleaning for researchers who do not have access to a cleanroom or would like to incorporate processes that could cause contamination of a cleanroom CMOS clean bench. Additionally, variables for regulating coverage are discussed and how to recognize and avoid common sample preparation problems is described. PMID:26274888
Fabrication of novel plasmonics-active substrates
NASA Astrophysics Data System (ADS)
Dhawan, Anuj; Gerhold, Michael; Du, Yan; Misra, Veena; Vo-Dinh, Tuan
2009-02-01
This paper describes methodologies for fabricating of highly efficient plasmonics-active SERS substrates - having metallic nanowire structures with pointed geometries and sub-5 nm gap between the metallic nanowires enabling concentration of high EM fields in these regions - on a wafer-scale by a reproducible process that is compatible with large-scale development of these substrates. Excitation of surface plasmons in these nanowire structures leads to substantial enhancement in the Raman scattering signal obtained from molecules lying in the vicinity of the nanostructure surface. The methodologies employed included metallic coating of silicon nanowires fabricated by employing deep UV lithography as well as controlled growth of silicon germanium on silicon nanostructures to form diamond-shaped nanowire structures followed by metallic coating. These SERS substrates were employed for detecting chemical and biological molecules of interest. In order to characterize the SERS substrates developed in this work, we obtained SERS signals from molecules such as p-mercaptobenzoic acid (pMBA) and cresyl fast violet (CFV) attached to or adsorbed on the metal-coated SERS substrates. It was observed that both gold-coated triangular shaped nanowire substrates as well as gold-coated diamond shaped nanowire substrates provided very high SERS signals for the nanowires having sub-15 nm gaps and that the SERS signal depends on the closest spacing between the metal-coated silicon and silicon germanium nanowires. SERS substrates developed by the different processes were also employed for detection of biological molecules such as DPA (Dipicolinic Acid), an excellent marker for spores of bacteria such as Anthrax.
Naveas, Nelson; Hernandez-Montelongo, Jacobo; Pulido, Ruth; Torres-Costa, Vicente; Villanueva-Guerrero, Raúl; Predestinación García Ruiz, Josefa; Manso-Silván, Miguel
2014-03-01
Nanostructured porous silicon (PSi) elicits as a very attractive material for future biosensing systems due to its high surface area, biocompatibility and well-established fabrication methods. In order to engineer its performance as a biosensor transducer platform, the density of immunoglobulins properly immobilized and oriented onto the surface needs to be optimized. In this work we fabricated and characterized a novel biosensing system focusing on the improvement of the biofunctionalization cascade. The system consists on a chemically oxidized PSi platform derivatized with 3-aminopropyltriethoxysilane (APTS) that is coupled to Staphylococcus protein A (SpA). The chemical oxidation has previously demonstrated to enhance the biofunctionalization process and here "by implementing SpA" a molecularly oriented immunosensor is achieved. The biosensor system is characterized in terms of its chemical composition, wettability and optical reflectance. Finally, this system is successfully exploited to develop a biosensor for detecting asymmetric dimethylarginine (ADMA), an endogenous molecule involved in cardiovascular diseases. Therefore, this work is relevant from the point of view of design and optimization of the biomolecular immobilization cascade on PSi surfaces with the added value of contribution to the development of new assays for detecting ADMA with a view on prevention of cardiovascular diseases. Copyright © 2013 Elsevier B.V. All rights reserved.
NASA Astrophysics Data System (ADS)
Zhang, Ziming; Zheng, Lu; Khurram, Muhammad; Yan, Qingfeng
2017-10-01
Few-layer black phosphorus, also known as phosphorene, is a new two-dimensional material which is of enormous interest for applications, mainly in electronics and optoelectronics. Herein, we for the first time employ phosphorene for directing the self-assembly of asymmetric polystyrene-block-polymethylmethacrylate (PS-b-PMMA) block copolymer (BCP) thin film to form the perpendicular orientation of sub-10 nm PS nanopore arrays in a hexagonal fashion normal to the interface. We experimentally demonstrate that none of the PS and PMMA blocks exhibit preferential affinity to the phosphorene-modified surface. Furthermore, the perpendicularly-oriented PS nanostructures almost stay unchanged with the variation of number of layers of few-layer phosphorene nanoflakes between 15-30 layers. Differing from the neutral polymer brushes which are widely used for chemical modification of the silicon substrate, phosphorene provides a novel physical way to control the interfacial interactions between the asymmetric PS-b-PMMA BCP thin film and the silicon substrate. Based on our results, it is possible to build a new scheme for producing sub-10 nm PS nanopore arrays oriented perpendicularly to the few-layer phosphorene nanoflakes. Furthermore, the nanostructural microdomains could serve as a promising nanolithography template for surface patterning of phosphorene nanoflakes.
Photoluminescence of Porous Silicon-Zinc Oxide Hybrid structures
NASA Astrophysics Data System (ADS)
Olenych, I. B.; Monastyrskii, L. S.; Luchechko, A. P.
2017-03-01
Arrays of ZnO nanostructures, which are optically transparent in the visible range, were grown on the surface of porous silicon by electrochemical deposition. Photoluminescence excitation and emission spectra of the obtained hybrid structures were investigated in 220-450 and 400-800 nm regions, respectively. It is established that multicolor emission is formed by combining the luminescence bands of porous silicon and zinc oxide. The possibility of controlling the photoluminescence spectra by changing the excitation energy is demonstrated. It is revealed that thermal annealing has an effect on the luminescent properties of porous silicon/zinc oxide hybrid structures. Thermal processing at 500°C leads to a sharp decrease of long-wavelength luminescence associated with porous silicon and to an increase of short-wavelength luminescence intensity related to zinc oxide.
Self-Assembly of Parallel Atomic Wires and Periodic Clusters of Silicon on a Vicinal Si(111) Surface
DOE Office of Scientific and Technical Information (OSTI.GOV)
Sekiguchi, Takeharu; Yoshida, Shunji; Itoh, Kohei M.
2005-09-02
Silicon self-assembly at step edges in the initial stage of homoepitaxial growth on a vicinal Si(111) surface is studied by scanning tunneling microscopy. The resulting atomic structures change dramatically from a parallel array of 0.7 nm wide wires to one-dimensionally aligned periodic clusters of diameter {approx}2 nm and periodicity 2.7 nm in the very narrow range of growth temperatures between 400 and 300 deg. C. These nanostructures are expected to play important roles in future developments of silicon quantum computers. Mechanisms leading to such distinct structures are discussed.
DOE Office of Scientific and Technical Information (OSTI.GOV)
Mangold, Claudia; Neogi, Sanghamitra; Max Planck Institut für Polymerforschung, Ackermannweg 10, D-55128 Mainz
2016-08-01
Silicon nanostructures with reduced dimensionality, such as nanowires, membranes, and thin films, are promising thermoelectric materials, as they exhibit considerably reduced thermal conductivity. Here, we utilize density functional theory and Boltzmann transport equation to compute the electronic properties of ultra-thin crystalline silicon membranes with thickness between 1 and 12 nm. We predict that an optimal thickness of ∼7 nm maximizes the thermoelectric figure of merit of membranes with native oxide surface layers. Further thinning of the membranes, although attainable in experiments, reduces the electrical conductivity and worsens the thermoelectric efficiency.
Development of Nanosized/Nanostructured Silicon as Advanced Anodes for Lithium-Ion Cells
NASA Technical Reports Server (NTRS)
Wu, James J.
2015-01-01
NASA is developing high energy and high capacity Li-ion cell and battery designs for future exploration missions under the NASA Advanced Space Power System (ASPS) Program. The specific energy goal is 265 Wh/kg at 10 C. center dot Part of effort for NASA advanced Li-ion cells ? Anode: Silicon (Si) as an advanced anode. ? Electrolyte: advanced electrolyte with flame-retardant additives for enhanced performance and safety (NASA JPL).
Schaal, Patrick A; Besmehn, Astrid; Maynicke, Eva; Noyong, Michael; Beschoten, Bernd; Simon, Ulrich
2012-02-07
We report the formation of thiol nanopatterns on SAM covered silicon wafers by converting sulfonic acid head groups via e-beam lithography. These thiol groups act as binding sites for gold nanoparticles, which can be enhanced to form electrically conducting nanostructures. This approach serves as a proof-of-concept for the combination of top-down and bottom-up processes for the generation of electrical devices on silicon.
Petrack, Janina; Jost, Steffen; Boenigk, Jens
2014-01-01
Summary Chrysophyceae, also known as golden algae, contain characteristic, three-dimensional biomineralized silica structures. Their chemical composition and microscopic structure was studied. By high-temperature conversion of the skeleton of Mallomonas caudata and Synura petersenii into elementary silicon by magnesium vapour, nanostructured defined replicates were produced which were clearly seen after removal of the formed magnesium oxide with acid. PMID:24991491
NASA Astrophysics Data System (ADS)
Ramirez-Porras, A.
2005-06-01
The structure of p-type porous silicon (PS) has been investigated by the use of transmission electron diffraction (TED) microscopy and image processing. The results suggest the presence of well oriented crystalline phases and polycrystalline phases characterized by random orientation. These phases are believed to be formed by spheres with a mean diameter of 4.3 nm and a standard deviation of 1.3 nm.
Surface-plasmon-enhanced photoluminescence of quantum dots based on open-ring nanostructure array
NASA Astrophysics Data System (ADS)
Kannegulla, Akash; Liu, Ye; Cheng, Li-Jing
2016-03-01
Enhanced photoluminescence (PL) of quantum dots (QD) in visible range using plasmonic nanostructures has potential to advance several photonic applications. The enhancement effect is, however, limited by the light coupling efficiency to the nanostructures. Here we demonstrate experimentally a new open-ring nanostructure (ORN) array 100 nm engraved into a 200 nm thick silver thin film to maximize light absorption and, hence, PL enhancement at a broadband spectral range. The structure is different from the traditional isolated or through-hole split-ring structures. Theoretical calculations based on FDTD method show that the absorption peak wavelength can be adjusted by their period and dimension. A broadband absorption of about 60% was measured at the peak wavelength of 550 nm. The emission spectrum of CdSe/ZnS core-shell quantum dots was chosen to match the absorption band of the ORN array to enhance its PL. The engraved silver ORN array was fabricated on a silver thin film deposited on a silicon substrate using focus ion beam (FIB) patterning. The device was characterized by using a thin layer of QD water dispersion formed between the ORN substrate and a cover glass. The experimental results show the enhanced PL for the QD with emission spectrum overlapping the absorption band of ORN substrate and quantum efficiency increases from 50% to 70%. The ORN silver substrate with high absorption over a broadband spectrum enables the PL enhancement and will benefit applications in biosensing, wavelength tunable filters, and imaging.
NASA Astrophysics Data System (ADS)
Jiang, Hao; Li, Tie; Wang, Yifeng; He, Pengfei
2018-04-01
Soot particles emitted from diesel engines have a significant impact on the atmospheric environment. Detailed understanding of soot formation and oxidation processes is helpful for reducing the pollution of soot particles, which requires information such as the size and nano-structure parameters of the soot primary particles sampled in a high-temperature and high-pressure diesel jet flame. Based on the thermophoretic principle, a novel sampling probe minimally disturbing the diesel jet flame in a constant volume combustion vessel is developed for analysing soot particles. The injected quantity of diesel fuel is less than 10 mg, and the soot particles sampled by carriers with a transmission electron microscope (TEM) grid and lacey TEM grid can be used to analyse the morphologies of soot aggregates and the nano-structure of the soot primary particles, respectively. When the quantity of diesel fuel is more than 10 mg, in order to avoid burning-off of the carriers in higher temperature and pressure conditions, single-crystal silicon chips are employed. Ultrasonic oscillations and alcohol extraction are then implemented to obtain high quality soot samples for observation using a high-resolution transmission electron microscope. An in-house Matlab-based code is developed to extract the nano-structure parameters of the soot particles. A complete sampling and analysis procedure of the soot particles is provided to study the formation and oxidation mechanism of soot.
On-chip cooling by superlattice-based thin-film thermoelectrics.
Chowdhury, Ihtesham; Prasher, Ravi; Lofgreen, Kelly; Chrysler, Gregory; Narasimhan, Sridhar; Mahajan, Ravi; Koester, David; Alley, Randall; Venkatasubramanian, Rama
2009-04-01
There is a significant need for site-specific and on-demand cooling in electronic, optoelectronic and bioanalytical devices, where cooling is currently achieved by the use of bulky and/or over-designed system-level solutions. Thermoelectric devices can address these limitations while also enabling energy-efficient solutions, and significant progress has been made in the development of nanostructured thermoelectric materials with enhanced figures-of-merit. However, fully functional practical thermoelectric coolers have not been made from these nanomaterials due to the enormous difficulties in integrating nanoscale materials into microscale devices and packaged macroscale systems. Here, we show the integration of thermoelectric coolers fabricated from nanostructured Bi2Te3-based thin-film superlattices into state-of-the-art electronic packages. We report cooling of as much as 15 degrees C at the targeted region on a silicon chip with a high ( approximately 1,300 W cm-2) heat flux. This is the first demonstration of viable chip-scale refrigeration technology and has the potential to enable a wide range of currently thermally limited applications.
Applying contact to individual silicon nanowires using a dielectrophoresis (DEP)-based technique
NASA Astrophysics Data System (ADS)
Leiterer, Christian; Broenstrup, Gerald; Jahr, Norbert; Urban, Matthias; Arnold, Cornelia; Christiansen, Silke; Fritzsche, Wolfgang
2013-05-01
One major challenge for the technological use of nanostructures is the control of their electrical and optoelectronic properties. For that purpose, extensive research into the electrical characterization and therefore a fast and reliable way of contacting these structures are needed. Here, we report on a new, dielectrophoresis (DEP)-based technique, which enables to apply sufficient and reliable contact to individual nanostructures, like semiconducting nanowires (NW), easily and without the need for lithography. The DEP contacting technique presented in this article can be done without high-tech equipment and monitored in situ with an optical microscope. In the presented experiments, individual SiNWs are trapped and subsequently welded between two photolithographically pre-patterned electrodes by applying varying AC voltages to the electrodes. To proof the quality of these contacts, I-V curves, photoresponse and photoconductivity of a single SiNW were measured. Furthermore, the measured photoconductivity in dependence on the wavelength of illuminated light and was compared with calculations predicting the absorption spectra of an individual SiNW.
Ultrafast Silicon Photonics with Visible to Mid-Infrared Pumping of Silicon Nanocrystals.
Diroll, Benjamin T; Schramke, Katelyn S; Guo, Peijun; Kortshagen, Uwe R; Schaller, Richard D
2017-10-11
Dynamic optical control of infrared (IR) transparency and refractive index is achieved using boron-doped silicon nanocrystals excited with mid-IR optical pulses. Unlike previous silicon-based optical switches, large changes in transmittance are achieved without a fabricated structure by exploiting strong light coupling of the localized surface plasmon resonance (LSPR) produced from free holes of p-type silicon nanocrystals. The choice of optical excitation wavelength allows for selectivity between hole heating and carrier generation through intraband or interband photoexcitation, respectively. Mid-IR optical pumping heats the free holes of p-Si nanocrystals to effective temperatures greater than 3500 K. Increases of the hole effective mass at high effective hole temperatures lead to a subpicosecond change of the dielectric function, resulting in a redshift of the LSPR, modulating mid-IR transmission by as much as 27%, and increasing the index of refraction by more than 0.1 in the mid-IR. Low hole heat capacity dictates subpicosecond hole cooling, substantially faster than carrier recombination, and negligible heating of the Si lattice, permitting mid-IR optical switching at terahertz repetition frequencies. Further, the energetic distribution of holes at high effective temperatures partially reverses the Burstein-Moss effect, permitting the modulation of transmittance at telecommunications wavelengths. The results presented here show that doped silicon, particularly in micro- or nanostructures, is a promising dynamic metamaterial for ultrafast IR photonics.
Ultrafast Silicon Photonics with Visible to Mid-Infrared Pumping of Silicon Nanocrystals
DOE Office of Scientific and Technical Information (OSTI.GOV)
Diroll, Benjamin T.; Schramke, Katelyn S.; Guo, Peijun
Dynamic optical control of infrared (IR) transparency and refractive index is achieved using boron-doped silicon nanocrystals excited with mid-IR optical pulses. Also, unlike previous silicon-based optical switches, large changes in transmittance are achieved without a fabricated structure by exploiting strong light coupling of the localized surface plasmon resonance (LSPR) produced from free holes of p-type silicon nanocrystals. The choice of optical excitation wavelength allows selectivity between hole heating and carrier generation through intraband or interband photoexcitation, respectively. Mid-IR optical pumping heats the free holes of p-Si nanocrystals to effective temperatures greater than 3500 K. Increases of the hole effective massmore » at high effective hole temperatures lead to a sub-picosecond change of the dielectric function resulting in a redshift of the LSPR, modulating mid-IR transmission by as much as 27% and increasing the index of refraction by more than 0.1 in the mid-IR. Low hole heat capacity dictates sub-picosecond hole cooling, substantially faster than carrier recombination, and negligible heating of the Si lattice, permitting mid-IR optical switching at terahertz repetition frequencies. Further, the energetic distribution of holes at high effective temperatures partially reverses the Burstein-Moss effect, permitting modulation of transmittance at telecommunications wavelengths. Lastly, the results presented here show that doped silicon, particularly in micro- or nanostructures, is a promising dynamic metamaterial for ultrafast IR photonics.« less
Ultrafast Silicon Photonics with Visible to Mid-Infrared Pumping of Silicon Nanocrystals
Diroll, Benjamin T.; Schramke, Katelyn S.; Guo, Peijun; ...
2017-09-11
Dynamic optical control of infrared (IR) transparency and refractive index is achieved using boron-doped silicon nanocrystals excited with mid-IR optical pulses. Also, unlike previous silicon-based optical switches, large changes in transmittance are achieved without a fabricated structure by exploiting strong light coupling of the localized surface plasmon resonance (LSPR) produced from free holes of p-type silicon nanocrystals. The choice of optical excitation wavelength allows selectivity between hole heating and carrier generation through intraband or interband photoexcitation, respectively. Mid-IR optical pumping heats the free holes of p-Si nanocrystals to effective temperatures greater than 3500 K. Increases of the hole effective massmore » at high effective hole temperatures lead to a sub-picosecond change of the dielectric function resulting in a redshift of the LSPR, modulating mid-IR transmission by as much as 27% and increasing the index of refraction by more than 0.1 in the mid-IR. Low hole heat capacity dictates sub-picosecond hole cooling, substantially faster than carrier recombination, and negligible heating of the Si lattice, permitting mid-IR optical switching at terahertz repetition frequencies. Further, the energetic distribution of holes at high effective temperatures partially reverses the Burstein-Moss effect, permitting modulation of transmittance at telecommunications wavelengths. Lastly, the results presented here show that doped silicon, particularly in micro- or nanostructures, is a promising dynamic metamaterial for ultrafast IR photonics.« less
Porous silicon-copper phthalocyanine heterostructure based photoelectrochemical cell
NASA Astrophysics Data System (ADS)
A. Betty, C.; N, Padma; Arora, Shalav; Survaiya, Parth; Bhattacharya, Debarati; Choudhury, Sipra; Roy, Mainak
2018-01-01
A hybrid solar cell consisting of nanostructured p-type porous silicon (PS) deposited with visible light absorbing dye, Copper Phthalocyanine (CuPc) has been prepared in the photoelectrochemical cell configuration. P-type PS with (100) and (111) orientations which have different porous structures were used for studying the effects of the substrate morphology on the cell efficiency. Heterostructures were prepared by depositing three different thicknesses of CuPc for optimizing the cell efficiency. Structural and surface characterizations were studied using XRD, Raman, SEM and AFM on the PS-CuPc heterostructure. XRD spectrum on both plane silicon and porous silicon indicates the π-π stacking of CuPc with increased disorder for CuPc film on porous silicon. Electrochemical characterizations under sun light type radiation have been carried out to evaluate the photosensitivity of the heterostructure. Between the two different substrates, (100) PS gives better photocurrent, possibly due to the higher surface area and lower series resistance of the structure. Among the (100) PS substrates, (100) PS with 15 nm CuPc film gives Voc more than 1 V resulting in higher efficiency for the cell. The study suggests the scope for optimization of solar cell efficiency using various combinations of the substrate structure and thickness of the sensitizing layer.
Three-dimensional atomic mapping of hydrogenated polymorphous silicon solar cells
DOE Office of Scientific and Technical Information (OSTI.GOV)
Chen, Wanghua, E-mail: wanghua.chen@polytechnique.edu; Roca i Cabarrocas, Pere; Pareige, Philippe
Hydrogenated polymorphous silicon (pm-Si:H) is a nanostructured material consisting of silicon nanocrystals embedded in an amorphous silicon matrix. Its use as the intrinsic layer in thin film p-i-n solar cells has led to good cell properties in terms of stability and efficiency. Here, we have been able to assess directly the concentration and distribution of nanocrystals and impurities (dopants) in p-i-n solar cells, by using femtosecond laser-assisted atom probe tomography (APT). An effective sample preparation method for APT characterization is developed. Based on the difference in atomic density between hydrogenated amorphous and crystalline silicon, we are able to distinguish themore » nanocrystals from the amorphous matrix by using APT. Moreover, thanks to the three-dimensional reconstruction, we demonstrate that Si nanocrystals are homogeneously distributed in the entire intrinsic layer of the solar cell. The influence of the process pressure on the incorporation of nanocrystals and their distribution is also investigated. Thanks to APT we could determine crystalline fractions as low as 4.2% in the pm-Si:H films, which is very difficult to determine by standard techniques, such as X-ray diffraction, Raman spectroscopy, and spectroscopic ellipsometry. Moreover, we also demonstrate a sharp p/i interface in our solar cells.« less
NASA Astrophysics Data System (ADS)
Ning, Kaijie; Bai, Xianming; Lu, Kathy
2018-07-01
Silicon carbide-nanostructured ferritic alloy (SiC-NFA) materials are expected to have the beneficial properties of each component for advanced nuclear claddings. Fabrication of pure NFA (0 vol% SiC-100 vol% NFA) and SiC-NFAs (2.5 vol% SiC-97.5 vol% NFA, 5 vol% SiC-95 vol% NFA) has been reported in our previous work. This paper is focused on the study of radiation damage in these materials under 5 MeV Fe++ ion irradiation with a dose up to ∼264 dpa. It is found that the material surfaces are damaged to high roughness with irregularly shaped ripples, which can be explained by the Bradley-Harper (B-H) model. The NFA matrix shows ion irradiation induced defect clusters and small dislocation loops, while the crystalline structure is maintained. Reaction products of Fe3Si and Cr23C6 are identified in the SiC-NFA materials, with the former having a partially crystalline structure but the latter having a fully amorphous structure upon irradiation. The different radiation damage behaviors of NFA, Fe3Si, and Cr23C6 are explained using the defect reaction rate theory.
Nanoscale semiconducting silicon as a nutritional food additive
NASA Astrophysics Data System (ADS)
Canham, L. T.
2007-05-01
Very high surface area silicon powders can be realized by high energy milling or electrochemical etching techniques. Such nanoscale silicon structures, whilst biodegradable in the human gastrointestinal tract, are shown to be remarkably stable in most foodstuffs and beverages. The potential for using silicon to improve the shelf life and bioavailability of specific nutrients in functional foods is highlighted. Published drug delivery data implies that the nanoentrapment of hydrophobic nutrients will significantly improve their dissolution kinetics, through a combined effect of nanostructuring and solid state modification. Nutrients loaded to date include vitamins, fish oils, lycopene and coenzyme Q10. In addition, there is growing published evidence that optimized release of orthosilicic acid, the biodegradation product of semiconducting silicon in the gut, offers beneficial effects with regard bone health. The utility of nanoscale silicon in the nutritional field shows early promise and is worthy of much further study.
Silicon based nano-architectures for high power lithium-ion battery anodes
NASA Astrophysics Data System (ADS)
Krishnan, Rahul
Lithium-ion batteries have now become an inseparable part of modern day society as the power source for several portable electronics like cell phones, digital cameras and laptops. Their high energy density compared with other electrochemical battery systems has been their most attractive feature. This has lead to a great interest in developing lithium-ion batteries for hybrid and all-electric vehicles. Eventually such vehicles will help drastically reduce the carbon footprint making the environment cleaner and healthier. In spite of their high energy density, Li-ion batteries are known to have poor power densities. This forms a major limitation in their deployment as a power source on vehicles. Electric vehicles need power sources that can provide both high energy and power densities. This requires the development of anode, cathode and electrolyte materials that would transform the capabilities of existing Li-ion batteries. Among anode materials silicon has received great attention because of its very large theoretical capacity of ˜4200 mAh/g based on the alloy Li22Si5. It should be noted that storage of charge in the anode occurs through the alloying of Li with the host anode material. However, the large specific capacity of silicon also results in a ˜400% volume expansion which could lead to pulverization and delamination reducing the cycle life of the electrode. These failure processes are exacerbated at high rates making it extremely difficult to use silicon for high-power Li-ion battery anodes. The major research thrust supporting this Ph.D. thesis involved exploring silicon based nano-architectures that would provide high energy and power densities over a long cycle life. The key technique used to design different nano-architectures was DC Magnetron sputtering with oblique angle deposition. The main development of this research was a functionally strain graded Carbon-Aluminum-Silicon nanoscoop architecture for high-power Li-ion battery anodes. This consisted of Carbon nanorods with an intermediate Aluminum layer finally capped by a nanoscoop of Silicon. The strain gradation arises from the fact that each of these materials has differential volumetric expansions due to different extents of Li uptake. Such a strain gradation from Carbon towards Silicon would provide for a less abrupt transition across the material interfaces thereby reducing interfacial mismatch and improving the tolerance to delamination at very high rates. This nano-architecture provided average capacities of ˜412 mAh/g with a power output of ˜100 kW/kg electrode continuously over 100 cycles. Even when the power output was as high as ˜250 kW/kgelectrode, the average capacity over 100 cycles is still ˜90 mAh/g. Furthermore, scanning electron microscopy and X-ray photoelectron spectroscopy investigations revealed that the functionally strain graded nanostructures were being partially lithiated in the bulk even at high rates. The fact that charge storage was not merely a surface phenomenon supported the high energy densities obtained at high charge/discharge rates. In an attempt to improve the mass loading density of Silicon based nano-architectures, a nano-compliant layer (NCL) supported thin film architecture was also explored. This consisted of an array of oblique nanorods (the nano-compliant layer) sandwiched between the substrate and the thin film. The NCL layer was used to improve the stress tolerance of the thin film thereby allowing the use of bulk thin films as opposed to nanostructures. This would directly improve the mass loading density. Silicon films with Carbon NCLs and Carbon films with Silicon NCLs were both deposited and tested. It was found that Li+ diffusivity is higher in carbon than in silicon by at least two orders of magnitude. This was calculated from cyclic voltammetry tests using the Randles-Sevcik equation. This difference in Li+ diffusivity within the two materials was found to be the C-rate limiting factor for a given nano-architecture design.
Wettability of Thin Silicate-Containing Hydroxyapatite Films Formed by RF-Magnetron Sputtering
NASA Astrophysics Data System (ADS)
Gorodzha, S. N.; Surmeneva, M. A.; Surmenev, R. A.; Gribennikov, M. V.; Pichugin, V. F.; Sharonova, A. A.; Pustovalova, A. A.; Prymack, O.; Epple, M.; Wittmar, A.; Ulbricht, M.; Gogolinskii, K. V.; Kravchuk, K. S.
2014-02-01
Using the methods of electron and atomic force microscopy, X-ray structural analysis and measurements of the wetting angle, the features of morphology, structure, contact angle and free surface energy of silicon-containing calcium-phosphate coatings formed on the substrates made from titanium VT1-0 and stainless steel 12Cr18Ni10Ti are investigated. It is shown that the coating - substrate system possesses bimodal roughness formed by the substrate microrelief and coating nanostructure, whose principal crystalline phase is represented by silicon-substituted hydroxiapatite with the size of the coherent scattering region (CSR) 18-26 nm. It is found out that the formation of a nanostructured coating on the surface of rough substrates makes them hydrophilic. The limiting angle of water wetting for the coatings formed on titanium and steel acquires the values in the following ranges: 90-92 and 101-104°, respectively, and decreases with time.
Review of nanostructured devices for thermoelectric applications
2014-01-01
Summary A big research effort is currently dedicated to the development of thermoelectric devices capable of a direct thermal-to-electrical energy conversion, aiming at efficiencies as high as possible. These devices are very attractive for many applications in the fields of energy recovery and green energy harvesting. In this paper, after a quick summary of the fundamental principles of thermoelectricity, the main characteristics of materials needed for high efficiency thermoelectric conversion will be discussed, and a quick review of the most promising materials currently under development will be given. This review paper will put a particular emphasis on nanostructured silicon, which represents a valid compromise between good thermoelectric properties on one side and material availability, sustainability, technological feasibility on the other side. The most important bottom-up and top-down nanofabrication techniques for large area silicon nanowire arrays, to be used for high efficiency thermoelectric devices, will be presented and discussed. PMID:25247111
Self-limiting and complete oxidation of silicon nanostructures produced by laser ablation in water
DOE Office of Scientific and Technical Information (OSTI.GOV)
Vaccaro, L.; Messina, F.; Camarda, P.
2016-07-14
Oxidized Silicon nanomaterials produced by 1064 nm pulsed laser ablation in deionized water are investigated. High-resolution transmission electron microscopy coupled with energy dispersive X-ray spectroscopy allows to characterize the structural and chemical properties at a sub-nanometric scale. This analysis clarifies that laser ablation induces both self-limiting and complete oxidation processes which produce polycrystalline Si surrounded by a layer of SiO{sub 2} and amorphous fully oxidized SiO{sub 2}, respectively. These nanostructures exhibit a composite luminescence spectrum which is investigated by time-resolved spectroscopy with a tunable laser excitation. The origin of the observed luminescence bands agrees with the two structural typologies: Si nanocrystalsmore » emit a μs-decaying red band; defects of SiO{sub 2} give rise to a ns-decaying UV band and two overlapping blue bands with lifetime in the ns and ms timescale.« less
Local probing of thermal energy transfer and conversion processes in VO2 nanostructures
NASA Astrophysics Data System (ADS)
Menges, Fabian
Nanostructures of strongly correlated materials, such as metal-insulator transition (MIT) oxides, enable unusual coupling of charge and heat transport. Hence, they provide an interesting pathway to the development of non-linear thermal devices for active heat flux control. Here, we will report the characterization of local thermal non-equilibrium processes in vanadium dioxide (VO2) thin films and single-crystalline nanobeams. Using a scanning thermal microscope and calorimetric MEMS platforms, we studied the MIT triggered by electrical currents, electrical fields, near-field thermal radiation and thermal conduction. Based on out recently introduced scanning probe thermometry method, which enables direct imaging of local Joule and Peltier effects, we quantified self-heating processes in VO2 memristors using the tip of a resistively heated scanning probe both as local sensor and nanoscopic heat source. Finally, we will report on recent approaches to build radiative thermal switches and oscillators using VO2 nanostructures. We quantified variations of near-field radiative thermal transport between silicon dioxide and VO2 down to nanoscopic gap sizes, and will discuss its implications for the development of phonon polariton based radiative thermal devices. Funding of the Swiss Federal Office of Energy under Grant Agreement No. SI/501093-01 is gratefully acknowledged.
NASA Astrophysics Data System (ADS)
Laminack, William; Gole, James
2015-12-01
A unique MEMS/NEMS approach is presented for the modeling of a detection platform for mixed gas interactions. Mixed gas analytes interact with nanostructured decorating metal oxide island sites supported on a microporous silicon substrate. The Inverse Hard/Soft acid/base (IHSAB) concept is used to assess a diversity of conductometric responses for mixed gas interactions as a function of these nanostructured metal oxides. The analyte conductometric responses are well represented using a combination diffusion/absorption-based model for multi-gas interactions where a newly developed response absorption isotherm, based on the Fermi distribution function is applied. A further coupling of this model with the IHSAB concept describes the considerations in modeling of multi-gas mixed analyte-interface, and analyte-analyte interactions. Taking into account the molecular electronic interaction of both the analytes with each other and an extrinsic semiconductor interface we demonstrate how the presence of one gas can enhance or diminish the reversible interaction of a second gas with the extrinsic semiconductor interface. These concepts demonstrate important considerations in the array-based formats for multi-gas sensing and its applications.
Oxide driven strength evolution of silicon surfaces
Grutzik, Scott J.; Milosevic, Erik; Boyce, Brad L.; ...
2015-11-19
Previous experiments have shown a link between oxidation and strength changes in single crystal silicon nanostructures but provided no clues as to the mechanisms leading to this relationship. Using atomic force microscope-based fracture strength experiments, molecular dynamics modeling, and measurement of oxide development with angle resolved x-ray spectroscopy we study the evolution of strength of silicon (111) surfaces as they oxidize and with fully developed oxide layers. We find that strength drops with partial oxidation but recovers when a fully developed oxide is formed and that surfaces intentionally oxidized from the start maintain their high initial strengths. MD simulations showmore » that strength decreases with the height of atomic layer steps on the surface. These results are corroborated by a completely separate line of testing using micro-scale, polysilicon devices, and the slack chain method in which strength recovers over a long period of exposure to the atmosphere. Lastly, combining our results with insights from prior experiments we conclude that previously described strength decrease is a result of oxidation induced roughening of an initially flat silicon (1 1 1) surface and that this effect is transient, a result consistent with the observation that surfaces flatten upon full oxidation.« less
NASA Astrophysics Data System (ADS)
Alhalaili, Badriyah; Dryden, Daniel M.; Vidu, Ruxandra; Ghandiparsi, Soroush; Cansizoglu, Hilal; Gao, Yang; Saif Islam, M.
2018-03-01
Photo-electrochemical (PEC) etching can produce high-aspect ratio features, such as pillars and holes, with high anisotropy and selectivity, while avoiding the surface and sidewall damage caused by traditional deep reactive ion etching (DRIE) or inductively coupled plasma (ICP) RIE. Plasma-based techniques lead to the formation of dangling bonds, surface traps, carrier leakage paths, and recombination centers. In pursuit of effective PEC etching, we demonstrate an optical system using long wavelength (λ = 975 nm) infra-red (IR) illumination from a high-power laser (1-10 W) to control the PEC etching process in n-type silicon. The silicon wafer surface was patterned with notches through a lithography process and KOH etching. Then, PEC etching was introduced by illuminating the backside of the silicon wafer to enhance depth, resulting in high-aspect ratio structures. The effect of the PEC etching process was optimized by varying light intensities and electrolyte concentrations. This work was focused on determining and optimizing this PEC etching technique on silicon, with the goal of expanding the method to a variety of materials including GaN and SiC that are used in designing optoelectronic and electronic devices, sensors and energy harvesting devices.
NASA Astrophysics Data System (ADS)
Meinardi, Francesco; Ehrenberg, Samantha; Dhamo, Lorena; Carulli, Francesco; Mauri, Michele; Bruni, Francesco; Simonutti, Roberto; Kortshagen, Uwe; Brovelli, Sergio
2017-02-01
Building-integrated photovoltaics is gaining consensus as a renewable energy technology for producing electricity at the point of use. Luminescent solar concentrators (LSCs) could extend architectural integration to the urban environment by realizing electrode-less photovoltaic windows. Crucial for large-area LSCs is the suppression of reabsorption losses, which requires emitters with negligible overlap between their absorption and emission spectra. Here, we demonstrate the use of indirect-bandgap semiconductor nanostructures such as highly emissive silicon quantum dots. Silicon is non-toxic, low-cost and ultra-earth-abundant, which avoids the limitations to the industrial scaling of quantum dots composed of low-abundance elements. Suppressed reabsorption and scattering losses lead to nearly ideal LSCs with an optical efficiency of η = 2.85%, matching state-of-the-art semi-transparent LSCs. Monte Carlo simulations indicate that optimized silicon quantum dot LSCs have a clear path to η > 5% for 1 m2 devices. We are finally able to realize flexible LSCs with performances comparable to those of flat concentrators, which opens the way to a new design freedom for building-integrated photovoltaics elements.
High efficiency silicon nanowire/organic hybrid solar cells with two-step surface treatment.
Wang, Jianxiong; Wang, Hao; Prakoso, Ari Bimo; Togonal, Alienor Svietlana; Hong, Lei; Jiang, Changyun; Rusli
2015-03-14
A simple two-step surface treatment process is proposed to boost the efficiency of silicon nanowire/PEDOT:PSS hybrid solar cells. The Si nanowires (SiNWs) are first subjected to a low temperature ozone treatment to form a surface sacrificial oxide, followed by a HF etching process to partially remove the oxide. TEM investigation demonstrates that a clean SiNW surface is achieved after the treatment, in contrast to untreated SiNWs that have Ag nanoparticles left on the surface from the metal-catalyzed etching process that is used to form the SiNWs. The cleaner SiNW surface achieved and the thin layer of residual SiO2 on the SiNWs have been found to improve the performance of the hybrid solar cells. Overall, the surface recombination of the hybrid SiNW solar cells is greatly suppressed, resulting in a remarkably improved open circuit voltage of 0.58 V. The power conversion efficiency has also increased from about 10% to 12.4%. The two-step surface treatment method is promising in enhancing the photovoltaic performance of the hybrid silicon solar cells, and can also be applied to other silicon nanostructure based solar cells.
NASA Astrophysics Data System (ADS)
Cansizoglu, Hilal; Gao, Yang; Ghandiparsi, Soroush; Kaya, Ahmet; Perez, Cesar Bartolo; Mayet, Ahmed; Ponizovskaya Devine, Ekaterina; Cansizoglu, Mehmet F.; Yamada, Toshishige; Elrefaie, Aly F.; Wang, Shih-Yuan; Islam, M. Saif
2017-08-01
Nanostructures allow broad spectrum and near-unity optical absorption and contributed to high performance low-cost Si photovoltaic devices. However, the efficiency is only a few percent higher than a conventional Si solar cell with thicker absorption layers. For high speed surface illuminated photodiodes, the thickness of the absorption layer is critical for short transit time and RC time. Recently a CMOS-compatible micro/nanohole silicon (Si) photodiode (PD) with more than 20 Gb/s data rate and with 52 % quantum efficiency (QE) at 850 nm was demonstrated. The achieved QE is over 400% higher than a similar Si PD with the same thickness but without absorption enhancement microstructure holes. The micro/nanoholes increases the QE by photon trapping, slow wave effects and generate a collective assemble of modes that radiate laterally, resulting in absorption enhancement and therefore increase in QE. Such Si PDs can be further designed to enhance the bandwidth (BW) of the PDs by reducing the device capacitance with etched holes in the pin junction. Here we present the BW and QE of Si PDs achievable with micro/nanoholes based on a combination of empirical evidence and device modeling. Higher than 50 Gb/s data rate with greater than 40% QE at 850 nm is conceivable in transceivers designed with such Si PDs that are integrated with photon trapping micro and nanostructures. By monolithic integration with CMOS/BiCMOS integrated circuits such as transimpedance amplifiers, equalizers, limiting amplifiers and other application specific integrated circuits (ASIC), the data rate can be increased to more than 50 Gb/s.
Achour, Amine; Saeed, Khalid; Djouadi, Mohamed Abdou
2018-01-01
In this work, we report development of hybrid nanostructures of metal nanoparticles (NP) and carbon nanostructures with strong potential for catalysis, sensing, and energy applications. First, the etched silicon wafer substrates were passivated for subsequent electrochemical (EC) processing through grafting of nitro phenyl groups using para-nitrobenzene diazonium (PNBT). The X-ray photoelectron spectroscope (XPS) and atomic force microscope (AFM) studies confirmed presence of few layers. Cobalt-based nanoparticles were produced over dip or spin coated Nafion films under different EC reduction conditions, namely CoSO4 salt concentration (0.1 M, 1 mM), reduction time (5, 20 s), and indirect or direct EC reduction route. Extensive AFM examination revealed NP formation with different attributes (size, distribution) depending on electrochemistry conditions. While relatively large NP with >100 nm size and bimodal distribution were obtained after 20 s EC reduction in H3BO3 following Co2+ ion uptake, ultrafine NP (<10 nm) could be produced from EC reduction in CoSO4 and H3BO3 mixed solution with some tendency to form oxides. Different carbon nanostructures including few-walled or multiwalled carbon nanotubes (CNT) and carbon nanosheets were grown in a C2H2/NH3 plasma using the plasma-enhanced chemical vapor deposition technique. The devised processing routes enable size controlled synthesis of cobalt nanoparticles and metal/carbon hybrid nanostructures with unique microstructural features. PMID:29702583
SOI-silicon as structural layer for NEMS applications
NASA Astrophysics Data System (ADS)
Villarroya, Maria; Figueras, Eduard; Perez-Murano, Francesc; Campabadal, Francesca; Esteve, Jaume; Barniol, Nuria
2003-04-01
The objective of this paper is to present the compatibilization between a standard CMOS on bulk silicon process and the fabrication of nanoelectromechanical systems using Silicon On Insulator (SOI) wafers as substrate. This compatibilization is required as first step to fabricate a very high sensitive mass sensor based on a resonant cantilever with nanometer dimensions using the crystal silicon COI layer as the structural layer. The cantilever is driven electrostatically to its resonance frequency by an electrode placed parallel to the cantilever. A capacitive readout is performed. To achieve very high resolution, very small dimensions of the cantilever (nanometer range) are needed. For this reason, the control and excitation circuitry has to be integrated on the same substrate than the cantilever. Prior to the development of this sensor, it is necessary to develop a substrate able to be used first to integrate a standard CMOS circuit and afterwards to fabricate the nano-resonator. Starting from a SOI wafer and using very simple processes, the SOI silicon layer is removed, except from the areas in which nano-structures will be fabricated; obtaining a silicon substrate with islands with a SOI structure. The CMOS circuitry will be integrated on the bulk silicon region, while the remainder SOI region will be used for the nanoresonator. The silicon oxide of this SOI region is used as insulator; and as sacrificial layer, etched to release the cantilever from the substrate. To assure the cover of the different CMOS layers over the step of the islands, it is essential to avoid very sharp steps.
Dynamic Behavior and Optimization of Advanced Armor Ceramics: January-December 2012 Annual Report
2015-03-01
tasks are reviewed: Nanostructured Armor Ceramics: Focus on Boron Carbide; The Role of Microstructure in the Impact Resistance for Silicon Carbide...Task 2: The Role of Microstructure in the Impact Resistance for Silicon Carbide (SiC), Core Program 22 3.1 Long-Range Goals 22 3.2 Background 22 3.3...from a 2-gr drop test using corn starch as a C source; D(0.9) = 1.27 μm ....................................................................12 Fig
2016-05-31
www.MaterialsViews.com Synthesis of the Gold Nanoparticles : The Au nanospheres were prepared according to previously reported procedure using the...Au Nanoparticles Using Specifi c Silicone : The synthesis of the functional silicone was previously reported as well as the surface modifi cation of...types of gold nanoparticles (AuNPs) are prepared and polished to high optical quality. Their photophysical properties are investigated. The glass
High-Fidelity Microwave Control of Single-Atom Spin Qubits in Silicon
2014-07-08
reality. Every electronic device found in our homes, offices, cars, pockets contains a brain made up of silicon transistors. Naturally, the trillion-dollar...to 6 GHz) and digital IQ modulation. AlazarTech ATS9440 This digitiser samples signals and stores them in memory for analysis, and has a graphical...nanostructures. Spin resonance experiments on donors in enriched 28Si have raised the suspicion that the proximity to a Si/SiO2 interface deteriorates
Design of nanostructured-based glucose biosensors
NASA Astrophysics Data System (ADS)
Komirisetty, Archana; Williams, Frances; Pradhan, Aswini; Konda, Rajini B.; Dondapati, Hareesh; Samantaray, Diptirani
2012-04-01
This paper presents the design of glucose sensors that will be integrated with advanced nano-materials, bio-coatings and electronics to create novel devices that are highly sensitive, inexpensive, accurate, and reliable. In the work presented, a glucose biosensor and its fabrication process flow have been designed. The device is based on electrochemical sensing using a working electrode with bio-functionalized zinc oxide (ZnO) nano-rods. Among all metal oxide nanostructures, ZnO nano-materials play a significant role as a sensing element in biosensors due to their properties such as high isoelectric point (IEP), fast electron transfer, non-toxicity, biocompatibility, and chemical stability which are very crucial parameters to achieve high sensitivity. Amperometric enzyme electrodes based on glucose oxidase (GOx) are used due to their stability and high selectivity to glucose. The device also consists of silicon dioxide and titanium layers as well as platinum working and counter electrodes and a silver/silver chloride reference electrode. Currently, the biosensors are being fabricated using the process flow developed. Once completed, the sensors will be bio-functionalized and tested to characterize their performance, including their sensitivity and stability.
Biodegradable porous silicon barcode nanowires with defined geometry
Chiappini, Ciro; Liu, Xuewu; Fakhoury, Jean Raymond; Ferrari, Mauro
2010-01-01
Silicon nanowires are of proven importance in diverse fields such as energy production and storage, flexible electronics, and biomedicine due to the unique characteristics emerging from their one-dimensional semiconducting nature and their mechanical properties. Here we report the synthesis of biodegradable porous silicon barcode nanowires by metal assisted electroless etch of single crystal silicon with resistivity ranging from 0.0008 Ω-cm to 10 Ω-cm. We define the geometry of the barcode nanowiresby nanolithography and we characterize their multicolor reflectance and photoluminescence. We develop phase diagrams for the different nanostructures obtained as a function of metal catalyst, H2O2 concentration, ethanol concentration and silicon resistivity, and propose a mechanism that explains these observations. We demonstrate that these nanowires are biodegradable, and their degradation time can be modulated by surface treatments. PMID:21057669
NASA Astrophysics Data System (ADS)
Vasin, Andriy V.; Ishikawa, Yukari; Shibata, Noriyoshi; Salonen, Jarno; Lehto, Vesa-Pekka
2007-05-01
A new approach to development of light-emitting SiO2:C layers on Si wafer is demonstrated. Carbon-incorporated silicon oxide was fabricated by three-step procedure: (1) formation of the porous silicon (por-Si) layer by ordinary anodization in HF:ethanol solution; (2) carbonization at 1000 °C in acetylene flow (formation of por-Si:C layer); (3) oxidation in the flow of moisturized argon at 800 °C (formation of SiO2:C layer). Resulting SiO2:C layer exhibited very strong and stable white photoluminescence at room temperature. It is shown that high reactivity of water vapor with nano-crystalline silicon and inertness with amorphous carbon play a key role in the formation of light-emitting SiO2:C layer.
Nanostructured porous Si-based nanoparticles for targeted drug delivery
Shahbazi, Mohammad-Ali; Herranz, Barbara; Santos, Hélder A.
2012-01-01
One of the backbones in nanomedicine is to deliver drugs specifically to unhealthy cells. Drug nanocarriers can cross physiological barriers and access different tissues, which after proper surface biofunctionalization can enhance cell specificity for cancer therapy. Recent developments have highlighted the potential of mesoporous silica (PSiO2) and silicon (PSi) nanoparticles for targeted drug delivery. In this review, we outline and discuss the most recent advances on the applications and developments of cancer therapies by means of PSiO2 and PSi nanomaterials. Bio-engineering and fine tuning of anti-cancer drug vehicles, high flexibility and potential for sophisticated release mechanisms make these nanostructures promising candidates for “smart” cancer therapies. As a result of their physicochemical properties they can be controllably loaded with large amounts of drugs and coupled to homing molecules to facilitate active targeting. The main emphasis of this review will be on the in vitro and in vivo studies. PMID:23507894
Scalable maskless patterning of nanostructures using high-speed scanning probe arrays
NASA Astrophysics Data System (ADS)
Chen, Chen; Akella, Meghana; Du, Zhidong; Pan, Liang
2017-08-01
Nanoscale patterning is the key process to manufacture important products such as semiconductor microprocessors and data storage devices. Many studies have shown that it has the potential to revolutionize the functions of a broad range of products for a wide variety of applications in energy, healthcare, civil, defense and security. However, tools for mass production of these devices usually cost tens of million dollars each and are only affordable to the established semiconductor industry. A new method, nominally known as "pattern-on-the- y", that involves scanning an array of optical or electrical probes at high speed to form nanostructures and offers a new low-cost approach for nanoscale additive patterning. In this paper, we report some progress on using this method to pattern self-assembled monolayers (SAMs) on silicon substrate. We also functionalize the substrate with gold nanoparticle based on the SAM to show the feasibility of preparing amphiphilic and multi-functional surfaces.
NASA Astrophysics Data System (ADS)
Grumezescu, Valentina; Andronescu, Ecaterina; Holban, Alina Maria; Mogoantă, Laurenţiu; Mogoşanu, George Dan; Grumezescu, Alexandru Mihai; Stănculescu, Anca; Socol, Gabriel; Iordache, Florin; Maniu, Horia; Chifiriuc, Mariana Carmen
2015-05-01
In this study we aimed to evaluate the biocompatibility and antimicrobial activity of kanamycin functionalized 5 nm-magnetite (Fe3O4@KAN) nanoparticles thin films deposited by Matrix Assisted Pulsed Laser Evaporation (MAPLE) technique. A laser deposition regime was established in order to stoichiometrically transfer Fe3O4@KAN thin films on silicone and glass substrates. Morphological and physico-chemical properties of powders and coatings were characterized by XRD, TEM, SEM, AFM and IR microscopy (IRM). Our nanostructured thin films have proved efficiency in the prevention of microbial adhesion and mature biofilms development as a result of antibiotic release in its active form. Furthermore, kanamycin functionalized nanostructures exhibit a good biocompatibility, both in vivo and in vitro, demonstrating their potential for implants application. This is the first study reporting the assessment of the in vivo biocompatibility of a magnetite-antimicrobial thin films produced by MAPLE technique.
Influence of strain on dislocation core in silicon
NASA Astrophysics Data System (ADS)
Pizzagalli, L.; Godet, J.; Brochard, S.
2018-05-01
First principles, density functional-based tight binding and semi-empirical interatomic potentials calculations are performed to analyse the influence of large strains on the structure and stability of a 60? dislocation in silicon. Such strains typically arise during the mechanical testing of nanostructures like nanopillars or nanoparticles. We focus on bi-axial strains in the plane normal to the dislocation line. Our calculations surprisingly reveal that the dislocation core structure largely depends on the applied strain, for strain levels of about 5%. In the particular case of bi-axial compression, the transformation of the dislocation to a locally disordered configuration occurs for similar strain magnitudes. The formation of an opening, however, requires larger strains, of about 7.5%. Furthermore, our results suggest that electronic structure methods should be favoured to model dislocation cores in case of large strains whenever possible.
Engineering empty space between Si nanoparticles for lithium-ion battery anodes.
Wu, Hui; Zheng, Guangyuan; Liu, Nian; Carney, Thomas J; Yang, Yuan; Cui, Yi
2012-02-08
Silicon is a promising high-capacity anode material for lithium-ion batteries yet attaining long cycle life remains a significant challenge due to pulverization of the silicon and unstable solid-electrolyte interphase (SEI) formation during the electrochemical cycles. Despite significant advances in nanostructured Si electrodes, challenges including short cycle life and scalability hinder its widespread implementation. To address these challenges, we engineered an empty space between Si nanoparticles by encapsulating them in hollow carbon tubes. The synthesis process used low-cost Si nanoparticles and electrospinning methods, both of which can be easily scaled. The empty space around the Si nanoparticles allowed the electrode to successfully overcome these problems Our anode demonstrated a high gravimetric capacity (~1000 mAh/g based on the total mass) and long cycle life (200 cycles with 90% capacity retention). © 2012 American Chemical Society
Nanostructured gold and platinum electrodes on silicon structures for biosensing
NASA Astrophysics Data System (ADS)
Ogurtsov, V. I.; Sheehan, M. M.
2005-01-01
Gold and platinum metal electrodes on Si/SiO2 having undergone anisotropic potassium hydroxide (KOH) etch treatment are considered. This treatment etches at different rates and directions in the material resulting in creation of numerous pyramid shaped holes in the silicon substrate. This surface is used to make metal electrodes with increased electrode efficiency. The electrodes can serve as the sensors or as the sensor substrates (for surface polymer modification) and because both gold and platinum are inert they have applications for food safety biosensing. Wine, an economically significant food product, was chosen as a matrix, and impedance spectroscopy (EIS) was selected as a method of investigation of electrode behaviour. Based on results of EIS, different complexity equivalent circuits were determined by applying fitting mean square root optimisation of sensor complex impedance measurements.
DOE Office of Scientific and Technical Information (OSTI.GOV)
Shir, Daniel J.; Yoon, Jongseung; Chanda, Debashis
2010-08-11
Recently developed classes of monocrystalline silicon solar microcells can be assembled into modules with characteristics (i.e., mechanically flexible forms, compact concentrator designs, and high-voltage outputs) that would be impossible to achieve using conventional, wafer-based approaches. This paper presents experimental and computational studies of the optics of light absorption in ultrathin microcells that include nanoscale features of relief on their surfaces, formed by soft imprint lithography. Measurements on working devices with designs optimized for broad band trapping of incident light indicate good efficiencies in energy production even at thicknesses of just a few micrometers. These outcomes are relevant not only tomore » the microcell technology described here but also to other photovoltaic systems that benefit from thin construction and efficient materials utilization.« less
NASA Astrophysics Data System (ADS)
Zeng, Lingxing; Liu, Renpin; Qiu, Heyuan; Chen, Xi; Huang, Xiaoxia; Xiong, Peixun; Qian, Qingrong; Chen, Qinghua; Wei, Mingdeng
2016-07-01
Silicon-based nanostructures are receiving intense interest in lithium-ion batteries (LIBs) because they have ultrahigh lithium ion storage ability. However, the fast capacity fading induced by the considerably tremendous volume changes of Si anode during the Li-ion intercalation processes as well as the low intrinsic electric conductivity have hindered its deployment. Herein, we initially developed an effective technique to synthesize the core-shell Si/nitrogen-doped carbon (Si/N-C), composite by combining in situ interfacial polymerization and decorate with melamine, followed by carbonization. When used as anode material for LIBs, the Si/N-C composite delivered a notable reversible capacity (1084 mAh g-1 at 0.2 A g-1 for 50 cycles) and high rate capability (495 mAh g-1 at 1 A g-1).
Kim, Kyoung Hwan; Lee, Dong Jin; Cho, Kyeong Min; Kim, Seon Joon; Park, Jung-Ki; Jung, Hee-Tae
2015-01-01
Owing to its simplicity and low temperature conditions, magnesiothermic reduction of silica is one of the most powerful methods for producing silicon nanostructures. However, incomplete reduction takes place in this process leaving unconverted silica under the silicon layer. This phenomenon limits the use of this method for the rational design of silicon structures. In this effort, a technique that enables complete magnesiothermic reduction of silica to form silicon has been developed. The procedure involves magnesium promoted reduction of vertically oriented mesoporous silica channels on reduced graphene oxides (rGO) sheets. The mesopores play a significant role in effectively enabling magnesium gas to interact with silica through a large number of reaction sites. Utilizing this approach, highly uniform, ca. 10 nm sized silicon nanoparticles are generated without contamination by unreacted silica. The new method for complete magnesiothermic reduction of mesoporous silica approach provides a foundation for the rational design of silicon structures. PMID:25757800
Generation of reactive oxygen species from porous silicon microparticles in cell culture medium.
Low, Suet Peng; Williams, Keryn A; Canham, Leigh T; Voelcker, Nicolas H
2010-06-01
Nanostructured (porous) silicon is a promising biodegradable biomaterial, which is being intensively researched as a tissue engineering scaffold and drug-delivery vehicle. Here, we tested the biocompatibility of non-treated and thermally-oxidized porous silicon particles using an indirect cell viability assay. Initial direct cell culture on porous silicon determined that human lens epithelial cells only poorly adhered to non-treated porous silicon. Using an indirect cell culture assay, we found that non-treated microparticles caused complete cell death, indicating that these particles generated a toxic product in cell culture medium. In contrast, thermally-oxidized microparticles did not reduce cell viability significantly. We found evidence for the generation of reactive oxygen species (ROS) by means of the fluorescent probe 2',7'-dichlorofluorescin. Our results suggest that non-treated porous silicon microparticles produced ROS, which interacted with the components of the cell culture medium, leading to the formation of cytotoxic species. Oxidation of porous silicon microparticles not only mitigated, but also abolished the toxic effects.
NASA Astrophysics Data System (ADS)
Stolyarova, Sara; Shemesh, Ariel; Aharon, Oren; Cohen, Omer; Gal, Lior; Eichen, Yoav; Nemirovsky, Yael
This study focuses on arrays of cantilevers made of crystalline silicon (c-Si), using SOI wafers as the starting material and using bulk micromachining. The arrays are subsequently transformed into composite porous silicon-crystalline silicon cantilevers, using a unique vapor phase process tailored for providing a thin surface layer of porous silicon on one side only. This results in asymmetric cantilever arrays, with one side providing nano-structured porous large surface, which can be further coated with polymers, thus providing additional sensing capabilities and enhanced sensing. The c-Si cantilevers are vertically integrated with a bottom silicon die with electrodes allowing electrostatic actuation. Flip Chip bonding is used for the vertical integration. The readout is provided by a sensitive Capacitance to Digital Converter. The fabrication, processing and characterization results are reported. The reported study is aimed towards achieving miniature cantilever chips with integrated readout for sensing explosives and chemical warfare agents in the field.
Thermoelectric properties of highly doped n-type polysilicon inverse opals
DOE Office of Scientific and Technical Information (OSTI.GOV)
Ma, J; Sinha, S
Nanostructured single-crystal silicon exhibits a remarkable increase in the figure of merit for thermoelectric energy conversion. Here we theoretically investigate a similar enhancement for polycrystalline silicon inverse opals. An inverse opal provides nanoscale grains and a thin-film like geometry to scatter phonons preferentially over electrons. Using solutions to the Boltzmann transport equation for electrons and phonons, we show that the figure of merit at 300 K is fifteen times that of bulk single-crystal silicon. Our models predict that grain boundaries are more effective than surfaces in enhancing the figure of merit. We provide insight into this effect and show thatmore » preserving a grain size smaller than the shell thickness of the inverse opal increases the figure of merit by as much as 50% when the ratio between the two features is a third. At 600 K, the figure of merit is as high as 0.6 for a shell thickness of 10 nm. This work advances the fundamental understanding of charge and heat transport in nanostructured inverse opals. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4758382]« less
Nanostructured Si(₁-x)Gex for tunable thin film lithium-ion battery anodes.
Abel, Paul R; Chockla, Aaron M; Lin, Yong-Mao; Holmberg, Vincent C; Harris, Justin T; Korgel, Brian A; Heller, Adam; Mullins, C Buddie
2013-03-26
Both silicon and germanium are leading candidates to replace the carbon anode of lithium ions batteries. Silicon is attractive because of its high lithium storage capacity while germanium, a superior electronic and ionic conductor, can support much higher charge/discharge rates. Here we investigate the electronic, electrochemical and optical properties of Si(1-x)Gex thin films with x = 0, 0.25, 0.5, 0.75, and 1. Glancing angle deposition provided amorphous films of reproducible nanostructure and porosity. The film's composition and physical properties were investigated by X-ray photoelectron spectroscopy, four-point probe conductivity, Raman, and UV-vis absorption spectroscopy. The films were assembled into coin cells to test their electrochemical properties as a lithium-ion battery anode material. The cells were cycled at various C-rates to determine the upper limits for high rate performance. Adjusting the composition in the Si(1-x)Gex system demonstrates a trade-off between rate capability and specific capacity. We show that high-capacity silicon anodes and high-rate germanium anodes are merely the two extremes; the composition of Si(1-x)Gex alloys provides a new parameter to use in electrode optimization.
Nanocrystalline silicon: Lattice dynamics and enhanced thermoelectric properties
Claudio, Tania; Stein, Niklas; Stroppa, Daniel G.; ...
2014-12-21
In this study, silicon has several advantages when compared to other thermoelectric materials, but until recently it was not used for thermoelectric applications due to its high thermal conductivity, 156 W K -1 m -1 at room temperature. Nanostructuration as means to decrease thermal transport through enhanced phonon scattering has been a subject of many studies. In this work we have evaluated the effects of nanostructuration on the lattice dynamics of bulk nanocrystalline doped silicon. The samples were prepared by gas phase synthesis, followed by current and pressure assisted sintering. The heat capacity, density of phonons states, and elastic constantsmore » were measured, which all reveal a significant, ≈25%, reduction in the speed of sound. The samples present a significantly decreased lattice thermal conductivity, ≈25 W K -1 m -1, which, combined with a very high carrier mobility, results in a dimensionless figure of merit with a competitive value that peaks at ZT ≈ 0.57 at 973 °C. Due to its easily scalable and extremely low-cost production process, nanocrystalline Si prepared by gas phase synthesis followed by sintering could become the material of choice for high temperature thermoelectric generators.« less
Simultaneous Perforation and Doping of Si Nanoparticles for Lithium-Ion Battery Anode.
Lv, Guangxin; Zhu, Bin; Li, Xiuqiang; Chen, Chuanlu; Li, Jinlei; Jin, Yan; Hu, Xiaozhen; Zhu, Jia
2017-12-27
Silicon nanostructures have served as promising building blocks for various applications, such as lithium-ion batteries, thermoelectrics, and solar energy conversions. Particularly, control of porosity and doping is critical for fine-tuning the mechanical, optical, and electrical properties of these silicon nanostructures. However, perforation and doping are usually separated processes, both of which are complicated and expensive. Here, we demonstrate that the porous nano-Si particles with controllable dopant can be massively produced through a facile and scalable method, combining ball-milling and acid-etching. Nano-Si with porosity as high as 45.8% can be achieved with 9 orders of magnitude of conductivity changes compared to intrinsic silicon. As an example for demonstration, the obtained nano-Si particles with 45.8% porosity and 3.7 atom % doping can serve as a promising anode for lithium-ion batteries with 2000 mA h/g retained over 100 cycles at the current density of 0.5 C, excellent rate performance with 1600 mA h/g at the current density of 5 C, and a stable cycling performance of above 1500 mA h/g retained over 940 cycles at the current density of 1 C with carbon coating.
NASA Astrophysics Data System (ADS)
Gray, Kory Forrest
The goal of this project was to examine the possibility of creating a novel thermal infrared detector based on silicon CMOS technology that has been enhanced by the latest nano-engineering discoveries. Silicon typically is not thought as an efficient thermoelectric material. However recent advancements in nanotechnology have improved the potential for a highly sensitive infrared detector based on nano-structured silicon. The thermal conductivity of silicon has been shown to be reduced from 150 W/mK down to 60 W/mK just by decreasing the scale of the silicon from bulk down to the sub-micron scale. Further reduction of the thermal conductivity has been shown by patterning silicon with a phonon crystal structure which has been reported to have thermal conductivities down to 10 W/mK. The phonon crystal structure consists of a 2D array of holes that are etched into the silicon. The size and pitch of the holes are on the order of the mean free path of the phonons in silicon which is approximately 200-500nm. This particular device had 200nm holes on a 400nm pitch. The Seebeck coefficient of silicon can also be enhanced by the reduction of the material from the bulk to sub-micron scale and with degenerate level doping. The combination of decreased thermal conductivity and increased Seebeck coefficient allow silicon to be a promising material for thermoelectric infrared detectors. The highly doped silicon is desired to reduce the electrical resistance of the device. The low electrical resistance is required to reduce the Johnson noise of the device which is the dominant noise source for most thermal detectors. This project designed a MEMS thermopile using a silicon-on-insulator substrate, and a CMOS compatible process. The basic thermopile consists of a silicon dioxide membrane with phononic crystal patterned silicon thermocouples around the edges of the membrane. Vertical aligned, multi-walled, carbon nanotubes were used as the infrared absorption layer. A MEMS thermoelectric detector with a D* of 3 * 107 cm Hz 0.5/W was demonstrated with a time response of 3-10 milliseconds. With this initial research, it is possible to improve the D* to the high 108 cm Hz 0.5/W range by slightly changing the design of the thermopile and patterning the absorption layer.
Fabrication of Three-Dimensional Nanostructures for Thermal Study
2013-01-01
Cu2O Inverse Opal …………………………………24 3.4 X - ray Analysis of the Structure …………………………………………………….26 3.5 Discussion and Future Direction...2.3 Characterization of Silicon Inverse Opal The 80 nm and 40 nm silicon inverse opal material properties were characterized by x - ray diffraction... x - ray beam of 1 ° relative to the surface of the sample was used due to the low amounts silicon present in the thin porous structure to enhance the
Concurrent design of quasi-random photonic nanostructures
Lee, Won-Kyu; Yu, Shuangcheng; Engel, Clifford J.; Reese, Thaddeus; Rhee, Dongjoon; Chen, Wei
2017-01-01
Nanostructured surfaces with quasi-random geometries can manipulate light over broadband wavelengths and wide ranges of angles. Optimization and realization of stochastic patterns have typically relied on serial, direct-write fabrication methods combined with real-space design. However, this approach is not suitable for customizable features or scalable nanomanufacturing. Moreover, trial-and-error processing cannot guarantee fabrication feasibility because processing–structure relations are not included in conventional designs. Here, we report wrinkle lithography integrated with concurrent design to produce quasi-random nanostructures in amorphous silicon at wafer scales that achieved over 160% light absorption enhancement from 800 to 1,200 nm. The quasi-periodicity of patterns, materials filling ratio, and feature depths could be independently controlled. We statistically represented the quasi-random patterns by Fourier spectral density functions (SDFs) that could bridge the processing–structure and structure–performance relations. Iterative search of the optimal structure via the SDF representation enabled concurrent design of nanostructures and processing. PMID:28760975
Leem, Jung Woo; Yu, Jae Su
2012-10-01
We reported the bioinspired periodic pinecone-shaped silicon (Si) subwavelength nanostructures, which were fabricated by laser interference lithography and inductively coupled plasma etching using thermally dewetted gold (Au) nanoparticles in SiCl4 plasma, on Si substrates for broadband and wide-angle antireflective surface. For the fabricated pinecone-like Si subwavelength nanostructures, antireflection characteristics and wetting behaviors were investigated. The pinecone-shaped Si subwavelength nanostructure with a period of 320 nm for 7 nm of Au film exhibited a relatively low solar weighted reflectance value of 3.5% over a wide wavelength range of 300-1030 nm, maintaining the reflectance values of < 9.9% at a wavelength of 550 nm up to a high incident angle of theta(i) = 70 degrees for non-polarized light. This structure also showed a hydrophobic surface with a water contact angle of theta(c) approximately 102 degrees.
Optimization of imprintable nanostructured a-Si solar cells: FDTD study.
Fisker, Christian; Pedersen, Thomas Garm
2013-03-11
We present a finite-difference time-domain (FDTD) study of an amorphous silicon (a-Si) thin film solar cell, with nano scale patterns on the substrate surface. The patterns, based on the geometry of anisotropically etched silicon gratings, are optimized with respect to the period and anti-reflection (AR) coating thickness for maximal absorption in the range of the solar spectrum. The structure is shown to increase the cell efficiency by 10.2% compared to a similar flat solar cell with an optimized AR coating thickness. An increased back reflection can be obtained with a 50 nm zinc oxide layer on the back reflector, which gives an additional efficiency increase, leading to a total of 14.9%. In addition, the patterned cells are shown to be up to 3.8% more efficient than an optimized textured reference cell based on the Asahi U-type glass surface. The effects of variations of the optimized solar cell structure due to the manufacturing process are investigated, and shown to be negligible for variations below ±10%.
Microwave plasma synthesis of Si/Ge and Si/WSi2 nanoparticles for thermoelectric applications
NASA Astrophysics Data System (ADS)
Petermann, Nils; Schneider, Tom; Stötzel, Julia; Stein, Niklas; Weise, Claudia; Wlokas, Irenäus; Schierning, Gabi; Wiggers, Hartmut
2015-08-01
The utilization of microwave-based plasma systems enables a contamination-free synthesis of highly specific nanoparticles in the gas phase. A reactor setup allowing stable, long-term operation was developed with the support of computational fluid dynamics. This paper highlights the prospects of gas-phase plasma synthesis to produce specific materials for bulk thermoelectrics. Taking advantage of specific plasma reactor properties such as Coulomb repulsion in combination with gas temperatures considerably higher than 1000 K, spherical and non-aggregated nanoparticles of multiple compositions are accessible. Different strategies towards various nanostructured composites and alloys are discussed. It is shown that, based on doped silicon/germanium alloys and composites, thermoelectric materials with zT values up to almost unity can be synthesized in one step. First experimental results concerning silicon/tungsten silicide thermoelectrics applying the nanoparticle-in-alloy idea are presented indicating that this concept might work. However, it is found that tungsten silicides show a surprising sinter activity more than 1000 K below their melting temperature.
Qin, Fei; Meng, Zi-Ming; Zhong, Xiao-Lan; Liu, Ye; Li, Zhi-Yuan
2012-06-04
We present a versatile technique based on nano-imprint lithography to fabricate high-quality semiconductor-polymer compound nonlinear photonic crystal (NPC) slabs. The approach allows one to infiltrate uniformly polystyrene materials that possess large Kerr nonlinearity and ultrafast nonlinear response into the cylindrical air holes with diameter of hundred nanometers that are perforated in silicon membranes. Both the structural characterization via the cross-sectional scanning electron microscopy images and the optical characterization via the transmission spectrum measurement undoubtedly show that the fabricated compound NPC samples have uniform and dense polymer infiltration and are of high quality in optical properties. The compound NPC samples exhibit sharp transmission band edges and nondegraded high quality factor of microcavities compared with those in the bare silicon PC. The versatile method can be expanded to make general semiconductor-polymer hybrid optical nanostructures, and thus it may pave the way for reliable and efficient fabrication of ultrafast and ultralow power all-optical tunable integrated photonic devices and circuits.
Particle agglomerated 3-d nanostructures for photon absorption
NASA Astrophysics Data System (ADS)
Sivayoganathan, Mugunthan
The main objective of this thesis is to investigate the photon absorption properties of particle agglomerated 3-D structures that are synthesized through femtosecond laser ablation of solids. The size and morphology of these particle agglomerated 3-D structures, which can be tailored through adjusting laser parameters, determine the photon absorption property. A systematic theoretical and experimental study was performed to identify the effect of lasers on the size of the formed particles. The literature survey showed that the amount of supersaturation influences the growth rate as well as the nucleation rate of vapour condensed nanoparticles. Based on this theory, a mechanism was formed to explain the control of laser parameters over the size of formed particles. Further, a theoretical explanation was proposed from the experimental results for the transition of particle size distribution modals. These proposed mechanisms and explanations show the variation in particle size in the particle agglomerated 3-D nanostructures with laser parameters. The effect of laser parameters on the formed ring size was studied. Based on the previous studies, a mechanism was proposed for the formation of ring nanoclusters. The laser pulse intensity dependent ponderomotive force was the key force to define the formation of ring nanoclusters. Then the effect of laser parameters on ring size was studied. Structures fabricated on several materials such as graphite, aluminosilicate ceramic, zinc ingot, gold, and titanium were analyzed to show the influence of material properties, laser parameters, and the environmental conditions on the size of ring formed. The studies performed on the structures showed a minimum absorption of 0.75 A.U. in the bandwidth from UV to IR. The absorption spectrum is much wider compared to existing nanomaterials, such as silicon nanostructures and titanium dioxide nanostructures. To the best of the author's knowledge, it is a very competitive absorption rate when compared with the previous nanostructures used in photovoltaic conversion. Several features of nanostructures contribute to the enhancement of this light absorption. The special feature of the structure is that ease to fabricate and modify the properties by varying the laser parameters could make it competitive among other nanostructures available for solar cells.
NASA Astrophysics Data System (ADS)
Bathula, Sivaiah; Gahtori, Bhasker; Jayasimhadri, M.; Tripathy, S. K.; Tyagi, Kriti; Srivastava, A. K.; Dhar, Ajay
2014-08-01
Owing to their high thermoelectric (TE) figure-of-merit, nanostructured Si80Ge20 alloys are evolving as a potential replacement for their bulk counterparts in designing efficient radio-isotope TE generators. However, as the mechanical properties of these alloys are equally important in order to avoid in-service catastrophic failure of their TE modules, we report the strength, hardness, fracture toughness, and thermal shock resistance of nanostructured n-type Si80Ge20 alloys synthesized employing spark plasma sintering of mechanically alloyed nanopowders of its constituent elements. These mechanical properties show a significant enhancement, which has been correlated with the microstructural features at nano-scale, delineated by transmission electron microscopy.
Sahoo, R K; Jacob, C
2014-06-01
The dewetting of a low melting point metal thin film deposited on silicon substrates was studied. The experimental results suggest that the change in the growth temperature affects the nanostructures that form. Based on the experimental results, the temperature which yielded the smallest features for the growth of nanotubes is determined. The mechanism by which these nano-templates become an efficient seeds for the growth of the carbon nanotubes is discussed. The partial bismuth filling inside the CNTs was optimized. Based on the results, a schematic growth model for better understanding of the process parameters has also been proposed.
Electrochemical Fabrication of Nanostructures on Porous Silicon for Biochemical Sensing Platforms.
Ko, Euna; Hwang, Joonki; Kim, Ji Hye; Lee, Joo Heon; Lee, Sung Hwan; Tran, Van-Khue; Chung, Woo Sung; Park, Chan Ho; Choo, Jaebum; Seong, Gi Hun
2016-01-01
We present a method for the electrochemical patterning of gold nanoparticles (AuNPs) or silver nanoparticles (AgNPs) on porous silicon, and explore their applications in: (1) the quantitative analysis of hydroxylamine as a chemical sensing electrode and (2) as a highly sensitive surface-enhanced Raman spectroscopy (SERS) substrate for Rhodamine 6G. For hydroxylamine detection, AuNPs-porous silicon can enhance the electrochemical oxidation of hydroxylamine. The current changed linearly for concentrations ranging from 100 μM to 1.32 mM (R(2) = 0.995), and the detection limit was determined to be as low as 55 μM. When used as SERS substrates, these materials also showed that nanoparticles decorated on porous silicon substrates have more SERS hot spots than those decorated on crystalline silicon substrates, resulting in a larger SERS signal. Moreover, AgNPs-porous silicon provided five-times higher signal compared to AuNPs-porous silicon. From these results, we expect that nanoparticles decorated on porous silicon substrates can be used in various types of biochemical sensing platforms.
Simultaneous droplet impingement dynamics and heat transfer on nano-structured surfaces
DOE Office of Scientific and Technical Information (OSTI.GOV)
Shen, Jian; Graber, Christof; Liburdy, James
This study examines the hydrodynamics and temperature characteristics of distilled deionized water droplets impinging on smooth and nano-structured surfaces using high speed (HS) and infrared (IR) imaging at We = 23.6 and Re = 1593, both based on initial drop impingement parameters. Results for a smooth and nano-structured surface for a range of surface temperatures are compared. Droplet impact velocity, transient spreading diameter and dynamic contact angle are measured. The near surface average droplet fluid temperatures are evaluated for conditions of evaporative cooling and boiling. Also included are surface temperature results using a gold layered IR opaque surface on silicon.more » Four stages of the impingement process are identified: impact, boiling, near constant surface diameter evaporation, and final dry-out. For the boiling conditions there is initial nucleation followed by severe boiling, then near constant diameter evaporation resulting in shrinking of the droplet height. When a critical contact angle is reached during evaporation the droplet rapidly retracts to a smaller diameter reducing the contact area with the surface. This continues as a sequence of retractions until final dry out. The basic trends are the same for all surfaces, but the nano-structured surface has a lower dissipated energy during impact and enhances the heat transfer for evaporative cooling with a 20% shorter time to achieve final dry out. (author)« less
Enhanced blue responses in nanostructured Si solar cells by shallow doping
NASA Astrophysics Data System (ADS)
Cheon, Sieun; Jeong, Doo Seok; Park, Jong-Keuk; Kim, Won Mok; Lee, Taek Sung; Lee, Heon; Kim, Inho
2018-03-01
Optimally designed Si nanostructures are very effective for light trapping in crystalline silicon (c-Si) solar cells. However, when the lateral feature size of Si nanostructures is comparable to the junction depth of the emitter, dopant diffusion in the lateral direction leads to excessive doping in the nanostructured emitter whereby poor blue responses arise in the external quantum efficiency (EQE). The primary goal of this study is to find the correlation of emitter junction depth and carrier collection efficiency in nanostructured c-Si solar cells in order to enhance the blue responses. We prepared Si nanostructures of nanocone shape by colloidal lithography, with silica beads of 520 nm in diameter, followed by a reactive ion etching process. c-Si solar cells with a standard cell architecture of an Al back surface field were fabricated varying the emitter junction depth. We varied the emitter junction depth by adjusting the doping level from heavy doping to moderate doping to light doping and achieved greatly enhanced blue responses in EQE from 47%-92% at a wavelength of 400 nm. The junction depth analysis by secondary ion mass-spectroscopy profiling and the scanning electron microscopy measurements provided us with the design guide of the doping level depending on the nanostructure feature size for high efficiency nanostructured c-Si solar cells. Optical simulations showed us that Si nanostructures can serve as an optical resonator to amplify the incident light field, which needs to be considered in the design of nanostructured c-Si solar cells.
Fano resonances in heterogeneous dimers of silicon and gold nanospheres
NASA Astrophysics Data System (ADS)
Zhao, Qian; Yang, Zhong-Jian; He, Jun
2018-06-01
We theoretically investigate the optical properties of dimers consisting of a gold nanosphere and a silicon nanosphere. The absorption spectrum of the gold sphere in the dimer can be significantly altered and exhibits a pronounced Fano profile. Analytical Mie theory and numerical simulations show that the Fano profile is induced by constructive and destructive interference between the incident electric field and the electric field of the magnetic dipole mode of the silicon sphere in a narrow wavelength range. The effects of the silicon sphere size, distance between the two spheres, and excitation configuration on the optical responses of the dimers are studied. Our study reveals the coherent feature of the electric fields of magnetic dipole modes in dielectric nanostructures and the strong interactions of the coherent fields with other nanophotonic structures.
Laminack, William
2013-01-01
Summary Nanostructure-decorated n-type semiconductor interfaces are studied in order to develop chemical sensing with nanostructured materials. We couple the tenets of acid/base chemistry with the majority charge carriers of an extrinsic semiconductor. Nanostructured islands are deposited in a process that does not require self-assembly in order to direct a dominant electron-transduction process that forms the basis for reversible chemical sensing in the absence of chemical-bond formation. Gaseous analyte interactions on a metal-oxide-decorated n-type porous silicon interface show a dynamic electron transduction to and from the interface depending upon the relative strength of the gas and metal oxides. The dynamic interaction of NO with TiO2, SnO2, NiO, CuxO, and AuxO (x >> 1), in order of decreasing acidity, demonstrates this effect. Interactions with the metal-oxide-decorated interface can be modified by the in situ nitridation of the oxide nanoparticles, enhancing the basicity of the decorated interface. This process changes the interaction of the interface with the analyte. The observed change to the more basic oxinitrides does not represent a simple increase in surface basicity but appears to involve a change in molecular electronic structure, which is well explained by using the recently developed IHSAB model. The optical pumping of a TiO2 and TiO2− xNx decorated interface demonstrates a significant enhancement in the ability to sense NH3 and NO2. Comparisons to traditional metal-oxide sensors are also discussed. PMID:23400337
Bulk nucleation and growth of inorganic nanowires and nanotubes
NASA Astrophysics Data System (ADS)
Sharma, Shashank
The nanometer scale materials such as nanowires and nanotubes will be of particular interest as building blocks for designing novel sensors, catalysts, electronic, optical, and optoelectronic devices. However, in order to realize these applications, bulk amounts of nanowires and nanotubes need to be synthesized with precise control over the nanostructure characteristics. In addition, the structure-property relationships for one-dimensional structures are expected to be different than their bulk when their diameters are less than a characteristic Bohr exciton radius. This fundamental curiosity also necessitates bulk synthesis of nanostructures. The current bulk nanowire synthesis methods utilize either nanometer scale porous molds or nanometer scale transition metal clusters to template one-dimensional growth. All these techniques have inherent limitations in terms of control over the nanowire diameter distribution, composition, the growth direction, and the ability to generate abrupt interfaces within individual nanowires. In this dissertation, a new concept for bulk nucleation and growth of one-dimensional nanostructures is proposed and demonstrated for a variety of inorganic material systems. In this technique, multiple nanowires nucleate and grow from pools of low-melting metal melts when exposed to an activated gas phase containing the necessary precursors. This concept, hereby termed Low Melting Metals and Activated Gas phase (LMAG) mediated method, is specifically demonstrated for the synthesis of, (a) silicon nanowires grown using molten gallium and silane precursors; (b) silicon compound nanowires using solution of molten gallium and appropriate gas phase precursors, and (c) metal-oxide nanostructures grown using direct reaction of the respective metal melts and oxygen precursors. Nanowires resulted from the same molten gallium pool at high densities (>1011/cm2) and with narrow diameter distribution. The silicon nanowires synthesized using the LMAG technique were single crystalline, defect free, and contained a non uniform, extremely thin oxide sheath (<1.5 nm). The nanowire diameter could be varied from 3 to 100 nm, with lengths up to hundreds of microns. Unique tubular and paintbrush-like morphologies were obtained in gallium oxide (Ga2O3) nanostructures. Small gallium droplets (<100 nm size) allowed Ga2O3 nanowire growth parallel to the substrate, followed by 2-dimensional nanoweb formation. These experiments using small gallium droplets resulted in the growth of crystalline Ga2O3 nanotubes with outer diameters as small as 5 nm and inner diameters as small as 2.5 nm.
Hiller, Daniel; López-Vidrier, Julian; Gutsch, Sebastian; Zacharias, Margit; Nomoto, Keita; König, Dirk
2017-04-13
Phosphorus doping of silicon nanostructures is a non-trivial task due to problems with confinement, self-purification and statistics of small numbers. Although P-atoms incorporated in Si nanostructures influence their optical and electrical properties, the existence of free majority carriers, as required to control electronic properties, is controversial. Here, we correlate structural, optical and electrical results of size-controlled, P-incorporating Si nanocrystals with simulation data to address the role of interstitial and substitutional P-atoms. Whereas atom probe tomography proves that P-incorporation scales with nanocrystal size, luminescence spectra indicate that even nanocrystals with several P-atoms still emit light. Current-voltage measurements demonstrate that majority carriers must be generated by field emission to overcome the P-ionization energies of 110-260 meV. In absence of electrical fields at room temperature, no significant free carrier densities are present, which disproves the concept of luminescence quenching via Auger recombination. Instead, we propose non-radiative recombination via interstitial-P induced states as quenching mechanism. Since only substitutional-P provides occupied states near the Si conduction band, we use the electrically measured carrier density to derive formation energies of ~400 meV for P-atoms on Si nanocrystal lattice sites. Based on these results we conclude that ultrasmall Si nanovolumes cannot be efficiently P-doped.
Zhu, Bin; Jin, Yan; Tan, Yingling; Zong, Linqi; Hu, Yue; Chen, Lei; Chen, Yanbin; Zhang, Qiao; Zhu, Jia
2015-09-09
Silicon, one of the most promising candidates as lithium-ion battery anode, has attracted much attention due to its high theoretical capacity, abundant existence, and mature infrastructure. Recently, Si nanostructures-based lithium-ion battery anode, with sophisticated structure designs and process development, has made significant progress. However, low cost and scalable processes to produce these Si nanostructures remained as a challenge, which limits the widespread applications. Herein, we demonstrate that Si nanoparticles with controlled size can be massively produced directly from low grade Si sources through a scalable high energy mechanical milling process. In addition, we systematically studied Si nanoparticles produced from two major low grade Si sources, metallurgical silicon (∼99 wt % Si, $1/kg) and ferrosilicon (∼83 wt % Si, $0.6/kg). It is found that nanoparticles produced from ferrosilicon sources contain FeSi2, which can serve as a buffer layer to alleviate the mechanical fractures of volume expansion, whereas nanoparticles from metallurgical Si sources have higher capacity and better kinetic properties because of higher purity and better electronic transport properties. Ferrosilicon nanoparticles and metallurgical Si nanoparticles demonstrate over 100 stable deep cycling after carbon coating with the reversible capacities of 1360 mAh g(-1) and 1205 mAh g(-1), respectively. Therefore, our approach provides a new strategy for cost-effective, energy-efficient, large scale synthesis of functional Si electrode materials.
Xie, Chao; Nie, Biao; Zeng, Longhui; Liang, Feng-Xia; Wang, Ming-Zheng; Luo, Linbao; Feng, Mei; Yu, Yongqiang; Wu, Chun-Yan; Wu, Yucheng; Yu, Shu-Hong
2014-04-22
Silicon nanostructure-based solar cells have lately intrigued intensive interest because of their promising potential in next-generation solar energy conversion devices. Herein, we report a silicon nanowire (SiNW) array/carbon quantum dot (CQD) core-shell heterojunction photovoltaic device by directly coating Ag-assisted chemical-etched SiNW arrays with CQDs. The heterojunction with a barrier height of 0.75 eV exhibited excellent rectifying behavior with a rectification ratio of 10(3) at ±0.8 V in the dark and power conversion efficiency (PCE) as high as 9.10% under AM 1.5G irradiation. It is believed that such a high PCE comes from the improved optical absorption as well as the optimized carrier transfer and collection capability. Furthermore, the heterojunction could function as a high-performance self-driven visible light photodetector operating in a wide switching wavelength with good stability, high sensitivity, and fast response speed. It is expected that the present SiNW array/CQD core-shell heterojunction device could find potential applications in future high-performance optoelectronic devices.
Fabrication of porous silicon nanowires by MACE method in HF/H2O2/AgNO3 system at room temperature
2014-01-01
In this paper, the moderately and lightly doped porous silicon nanowires (PSiNWs) were fabricated by the ‘one-pot procedure’ metal-assisted chemical etching (MACE) method in the HF/H2O2/AgNO3 system at room temperature. The effects of H2O2 concentration on the nanostructure of silicon nanowires (SiNWs) were investigated. The experimental results indicate that porous structure can be introduced by the addition of H2O2 and the pore structure could be controlled by adjusting the concentration of H2O2. The H2O2 species replaces Ag+ as the oxidant and the Ag nanoparticles work as catalyst during the etching. And the concentration of H2O2 influences the nucleation and motility of Ag particles, which leads to formation of different porous structure within the nanowires. A mechanism based on the lateral etching which is catalyzed by Ag particles under the motivation by H2O2 reduction is proposed to explain the PSiNWs formation. PMID:24910568
Moritake, Yuto; Tanaka, Takuo
2018-02-05
We propose and demonstrate the elimination of substrate influence on plasmon resonance by using selective and isotropic etching of substrates. Preventing the red shift of the resonance due to substrates and improving refractive index sensitivity were experimentally demonstrated by using plasmonic nanostructures fabricated on silicon substrates. Applying substrate etching decreases the effective refractive index around the metal nanostructures, resulting in elimination of the red shift. Improvement of sensitivity to the refractive index environment was demonstrated by using plasmonic metamaterials with Fano resonance based on far field interference. Change in quality factors (Q-factors) of the Fano resonance by substrate etching was also investigated in detail. The presence of a closely positioned substrate distorts the electric field distribution and degrades the Q-factors. Substrate etching dramatically increased the refractive index sensitivity reaching to 1532 nm/RIU since the electric fields under the nanostructures became accessible through substrate etching. The FOM was improved compared to the case without the substrate etching. The method presented in this paper is applicable to a variety of plasmonic structures to eliminate the influence of substrates for realizing high performance plasmonic devices.
NASA Astrophysics Data System (ADS)
Gu, Jian
This thesis explores how nanopatterns can be used to control the growth of single-crystal silicon on amorphous substrates at low temperature, with potential applications on flat panel liquid-crystal display and 3-dimensional (3D) integrated circuits. I first present excimer laser annealing of amorphous silicon (a-Si) nanostructures on thermally oxidized silicon wafer for controlled formation of single-crystal silicon islands. Preferential nucleation at pattern center is observed due to substrate enhanced edge heating. Single-grain silicon is obtained in a 50 nm x 100 nm rectangular pattern by super lateral growth (SLG). Narrow lines (such as 20-nm-wide) can serve as artificial heterogeneous nucleation sites during crystallization of large patterns, which could lead to the formation of single-crystal silicon islands in a controlled fashion. In addition to eximer laser annealing, NanoPAtterning and nickel-induced lateral C&barbelow;rystallization (NanoPAC) of a-Si lines is presented. Single-crystal silicon is achieved by NanoPAC. The line width of a-Si affects the grain structure of crystallized silicon lines significantly. Statistics show that single-crystal silicon is formed for all lines with width between 50 nm to 200 nm. Using in situ transmission electron microscopy (TEM), nickel-induced lateral crystallization (Ni-ILC) of a-Si inside a pattern is revealed; lithography-constrained single seeding (LISS) is proposed to explain the single-crystal formation. Intragrain line and two-dimensional defects are also studied. To test the electrical properties of NanoPAC silicon films, sub-100 nm thin-film transistors (TFTs) are fabricated using Patten-controlled crystallization of Ṯhin a-Si channel layer and H&barbelow;igh temperature (850°C) annealing, coined PaTH process. PaTH TFTs show excellent device performance over traditional solid phase crystallized (SPC) TFTs in terms of threshold voltage, threshold voltage roll-off, leakage current, subthreshold swing, on/off current ratio, device-to-device uniformity etc. Two-dimensional device simulations show that PaTH TFTs are comparable to silicon-on-insulator (SOI) devices, making it a promising candidate for the fabrication of future high performance, low-power 3D integrated circuits. Finally, an ultrafast nanolithography technique, laser-assisted direct imprint (LADI) is introduced. LADI shows the ability of patterning nanostructures directly in silicon in nanoseconds with sub-10 nm resolution. The process has potential applications in multiple disciplines, and could be extended to other materials and processes.
Nanosilicon for nanomedicine: a step towards biodegradable electronic implants?
Canham, Leigh
2013-10-01
Leigh Canham received his BSc degree in physics from University College London (London, UK) in 1979 and his PhD in solid state physics from King's College London (London, UK). He now has over 30 years of experience conducting research on widely differing aspects of silicon technology. Two key personal discoveries--that nanostructured silicon can emit visible light efficiently (1990) and can be rendered medically biodegradable (1995)--have had significant academic (>15,000 citations) and commercial (multiple companies created) impact. Professor Canham is a scientist who is devoted to finding novel properties and uses for semiconductors that already pervade our everyday lives. He has 13 years of experience of start up company management, right through from cofounding with seed venture capital finance to NASDAQ listing. He has served on the board of two companies based in England, UK, one in Singapore and one in Australia. Since 1999, he has held an Honorary Professorship at the School of Physics, University of Birmingham (Birmingham, UK) for his work on luminescent silicon. In 2011, Leigh was a shortlisted finalist for the European Inventor of the Year Award from the European Patent Office for his work on biodegradable silicon. In 2012, he became a Thomson Reuters Citation Laureate for his work on luminescent silicon. Professor Canham has authored over 150 peer-reviewed papers and has more than 100 granted patents worldwide.
Naffouti, Meher; David, Thomas; Benkouider, Abdelmalek; Favre, Luc; Cabie, Martiane; Ronda, Antoine; Berbezier, Isabelle; Abbarchi, Marco
2016-07-29
We report on a novel method for the implementation of core-shell SiGe-based nanocrystals combining silicon on insulator dewetting in a molecular beam epitaxy reactor with an ex situ Ge condensation process. With an in situ two-step process (annealing and Ge deposition) we produce two families of islands on the same sample: Si-rich, formed during the first step and, all around them, Ge-rich formed after Ge deposition. By increasing the amount of Ge deposited on the annealed samples from 0 to 18 monolayers, the islands' shape in the Si-rich zones can be tuned from elongated and flat to more symmetric and with a larger vertical aspect ratio. At the same time, the spatial extension of the Ge-rich zones is progressively increased as well as the Ge content in the islands. Further processing by ex situ rapid thermal oxidation results in the formation of a core-shell composition profile in both Si and Ge-rich zones with atomically sharp heterointerfaces. The Ge condensation induces a Ge enrichment of the islands' shell of up to 50% while keeping a pure Si core in the Si-rich zones and a ∼25% SiGe alloy in the Ge-rich ones. The large lattice mismatch between core and shell, the absence of dislocations and the islands' monocrystalline nature render this novel class of nanostructures a promising device platform for strain-based band-gap engineering. Finally, this method can be used for the implementation of ultralarge scale meta-surfaces with dielectric Mie resonators for light manipulation at the nanoscale.
Laser fabrication of porous silicon-based platforms for cell culturing.
Peláez, Ramón-J; Afonso, Carmen-N; Vega, Fidel; Recio-Sánchez, Gonzalo; Torres-Costa, Vicente; Manso-Silván, Miguel; García-Ruiz, Josefa-P; Martín-Palma, Raúl-J
2013-11-01
In this study, we explore the selective culturing of human mesenchymal stem cells (hMSCs) on Si-based diffractive platforms. We demonstrate a single-step and flexible method for producing platforms on nanostructured porous silicon (nanoPS) based on the use of single pulses of an excimer laser to expose phase masks. The resulting patterns are typically 1D patterns formed by fringes or 2D patterns formed by circles. They are formed by alternate regions of almost unmodified nanoPS and regions where the nanoPS surface has melted and transformed into Si nanoparticles. The patterns are produced in relatively large areas (a few square millimeters) and can have a wide range of periodicities and aspect ratios. Direct binding, that is, with no previous functionalization of the pattern, alignment, and active polarization of hMSCs are explored. The results show the preferential direct binding of the hMSCs along the transformed regions whenever their width compares with the dimensions of the cells and they escape from patterns for smaller widths suggesting that the selectivity can be tailored through the pattern period. Copyright © 2013 Wiley Periodicals, Inc.
Role of Cellulose Nanocrystals on the Microstructure of Maleic Anhydride Plasma Polymer Thin Films.
Brioude, Michel M; Roucoules, Vincent; Haidara, Hamidou; Vonna, Laurent; Laborie, Marie-Pierre
2015-07-01
Recently, it was shown that the microstructure of a maleic anhydride plasma polymer (MAPP) could be tailored ab initio by adjusting the plasma process parameters. In this work, we aim to investigate the ability of cellulose nanocrystals (CNCs) to induce topographical structuration. Thus, a new approach was designed based on the deposition of MAPP on CNCs model surfaces. The nanocellulosic surfaces were produced by spin-coating the CNC suspension on a silicon wafer substrate and on a hydrophobic silicon wafer substrate patterned with circular hydrophilic microsized domains (diameter of 86.9 ± 4.9 μm), resulting in different degrees of CNC aggregation. By depositing the MAPP over these surfaces, it was possible to observe that the surface fraction of nanostructures increased from 20% to 35%. This observation suggests that CNCs can act as nucleation points resulting in more structures, although a critical density of the CNCs is required.
Dopant atoms as quantum components in silicon nanoscale devices
NASA Astrophysics Data System (ADS)
Zhao, Xiaosong; Han, Weihua; Wang, Hao; Ma, Liuhong; Li, Xiaoming; Zhang, Wang; Yan, Wei; Yang, Fuhua
2018-06-01
Recent progress in nanoscale fabrication allows many fundamental studies of the few dopant atoms in various semiconductor nanostructures. Since the size of nanoscale devices has touched the limit of the nature, a single dopant atom may dominate the performance of the device. Besides, the quantum computing considered as a future choice beyond Moore's law also utilizes dopant atoms as functional units. Therefore, the dopant atoms will play a significant role in the future novel nanoscale devices. This review focuses on the study of few dopant atoms as quantum components in silicon nanoscale device. The control of the number of dopant atoms and unique quantum transport characteristics induced by dopant atoms are presented. It can be predicted that the development of nanoelectronics based on dopant atoms will pave the way for new possibilities in quantum electronics. Project supported by National Key R&D Program of China (No. 2016YFA0200503).
NASA Astrophysics Data System (ADS)
Jeon, Kiseok; Jee, Hongsub; Lim, Sangwoo; Park, Min Joon; Jeong, Chaehwan
2018-03-01
Effective incident light should be controlled for improving the current density of solar cells by employing nano- and micro-structures on silicon surface. The elastomeric stamp process, which is more cost effective and simpler than conventional photolithography, was proposed for the fabrication of nano- and micro-structures. Polydimethylsiloxane (PDMS) was poured on a mother pattern with a diameter of 6 μm and a spacing of 2 μm; then, curing was performed to create a PDMS mold. The regular micropattern was stamped on a low-viscosity resin-coated silicon surface, followed by the simple reactive ion etching process. Nano-structures were formed using the Ag-based electroless etching process. As etching time was increased to 6 min, reflectance decreased to 4.53% and current density improved from 22.35 to 34.72 mA/cm2.
NASA Astrophysics Data System (ADS)
Straub, M.; Schüle, M.; Afshar, M.; Feili, D.; Seidel, H.; König, K.
2014-04-01
Nanoscale periodic rifts and subwavelength ripples as well as randomly nanoporous surface structures were generated on Si(100) surfaces immersed in water by tightly focused high-repetition rate sub-15 femtosecond sub-nanojoule pulsed Ti:sapphire laser light. Subsequent to laser processing, silicon oxide nanoparticles, which originated from a reaction of ablated silicon with water and aggregated on the exposed areas, were etched off by hydrofluoric acid. The structural phases of the three types of silicon nanostructures were investigated by transmission electron microscopy diffraction images recorded on focused ion beam sections. On nanorift patterns, which were produced at radiant exposure extremely close to the ablation threshold, only the ideal Si-I phase at its original bulk orientation was observed. Electron diffraction micrographs of periodic ripples, which were generated at slightly higher radiant exposure, revealed a compression of Si-I in the vertical direction by 6 %, which is attributed to recoil pressure acting during ablation. However, transitions to the high-pressure phase Si-II, which implies compression in the same direction at pressures in excess of 10 GPa, to the metastable phases Si-III or Si-IV that arise from Si-II on pressure relief or to other high-pressure phases (Si-V-Si-XII) were not observed. The nanoporous surfaces featured Si-I material with grains of resolidified silicon occurring at lattice orientations different from the bulk. Characteristic orientational relationships as well as small-angle grain boundaries reflected the rapid crystal growth on the substrate.
NASA Astrophysics Data System (ADS)
Sengstock, Christina; Lopian, Michael; Motemani, Yahya; Borgmann, Anna; Khare, Chinmay; Buenconsejo, Pio John S.; Schildhauer, Thomas A.; Ludwig, Alfred; Köller, Manfred
2014-05-01
The aim of this study was to reproduce the physico-mechanical antibacterial effect of the nanocolumnar cicada wing surface for metallic biomaterials by fabrication of titanium (Ti) nanocolumnar surfaces using glancing angle sputter deposition (GLAD). Nanocolumnar Ti thin films were fabricated by GLAD on silicon substrates. S. aureus as well as E. coli were incubated with nanostructured or reference dense Ti thin film test samples for one or three hours at 37 °C. Bacterial adherence, morphology, and viability were analyzed by fluorescence staining and scanning electron microscopy and compared to human mesenchymal stem cells (hMSCs). Bacterial adherence was not significantly different after short (1 h) incubation on the dense or the nanostructured Ti surface. In contrast to S. aureus the viability of E. coli was significantly decreased after 3 h on the nanostructured film compared to the dense film and was accompanied by an irregular morphology and a cell wall deformation. Cell adherence, spreading and viability of hMSCs were not altered on the nanostructured surface. The results show that the selective antibacterial effect of the cicada wing could be transferred to a nanostructured metallic biomaterial by mimicking the natural nanocolumnar topography.
Sponge-like Si-SiO2 nanocomposite—Morphology studies of spinodally decomposed silicon-rich oxide
NASA Astrophysics Data System (ADS)
Friedrich, D.; Schmidt, B.; Heinig, K. H.; Liedke, B.; Mücklich, A.; Hübner, R.; Wolf, D.; Kölling, S.; Mikolajick, T.
2013-09-01
Sponge-like Si nanostructures embedded in SiO2 were fabricated by spinodal decomposition of sputter-deposited silicon-rich oxide with a stoichiometry close to that of silicon monoxide. After thermal treatment a mean feature size of about 3 nm was found in the phase-separated structure. The structure of the Si-SiO2 nanocomposite was investigated by energy-filtered transmission electron microscopy (EFTEM), EFTEM tomography, and atom probe tomography, which revealed a percolated Si morphology. It was shown that the percolation of the Si network in 3D can also be proven on the basis of 2D EFTEM images by comparison with 3D kinetic Monte Carlo simulations.
NASA Astrophysics Data System (ADS)
Gnilitskyi, Iaroslav; Gruzdev, Vitaly; Bulgakova, Nadezhda M.; Mocek, Tomáš; Orazi, Leonardo
2016-10-01
Silicon is one of the most abundant materials which is used in many areas of modern research and technology. A variety of those applications require surface nanopatterning with minimum structure defects. However, the high-quality nanostructuring of large areas of silicon surface at industrially acceptable speed is still a challenge. Here, we report a rapid formation of highly regular laser-induced periodic surface structures (HR-LIPSS) in the regime of strong ablation by infrared femtosecond laser pulses at sub-MHz repetition rate. Parameters of the laser-surface interactions and obtained experimental results suggest an important role of electrostatically assisted bond softening in initiating the HR-LIPSS formation.
Analysis of periodically patterned metallic nanostructures for infrared absorber
NASA Astrophysics Data System (ADS)
Peng, Sha; Yuan, Ying; Long, Huabao; Liu, Runhan; Wei, Dong; Zhang, Xinyu; Wang, Haiwei; Xie, Changsheng
2018-02-01
With rapid advancement of infrared detecting technology in both military and civil domains, the photo-electronic performances of near-infrared detectors have been widely concerned. Currently, near-infrared detectors demonstrate some problems such as low sensitivity, low detectivity, and relatively small array scale. The current studies show that surface plasmons (SPs) stimulated over the surface of metallic nanostructures by incident light can be used to break the diffraction limit and thus concentrate light into sub-wavelength scale, so as to indicate a method to develop a new type of infrared absorber or detector with very large array. In this paper, we present the design and characterization of periodically patterned metallic nanostructures that combine nanometer thickness aluminum film with silicon wafer. Numerical computations show that there are some valleys caused by surface plasmons in the reflection spectrum in the infrared region, and both red shift and blue shift of the reflection spectrum were observed through changing the nanostructural parameters such as angle α and diameters D. Moreover, the strong E-field intensity is located at the sharp corner of the nano-structures.
DOE Office of Scientific and Technical Information (OSTI.GOV)
Smith, Bennett E.; Roder, Paden B.; Hanson, Jennifer L.
2015-03-13
Photodynamic therapy has been used for several decades in the treatment of solid tumors through the generation of reactive singlet-oxygen species (1O2). Recently, nanoscale metallic and semiconducting materials have been reported to act as photosensitizing agents with additional diagnostic and therapeutic functionality. To date there have been no reports of observing the generation of singlet-oxygen at the level of single nanostructures, particularly at near infrared (NIR) wavelengths. Here we demonstrate that NIR laser-tweezers can be used to observe the formation of singlet-oxygen produced from individual silicon and gold nanowires via use of a commercially available reporting dye. The laser trapmore » also induces 2-photon photoexcitation of the dye following a chemical reaction with singlet oxygen. Corresponding 2-photon emission spectra confirms the generation of singlet oxygen from individual silicon nanowires at room temperature (30°C), suggesting a range of applications in understanding the impact of 1O2 on individual cancer cells.« less
Nanohole Structuring for Improved Performance of Hydrogenated Amorphous Silicon Photovoltaics.
Johlin, Eric; Al-Obeidi, Ahmed; Nogay, Gizem; Stuckelberger, Michael; Buonassisi, Tonio; Grossman, Jeffrey C
2016-06-22
While low hole mobilities limit the current collection and efficiency of hydrogenated amorphous silicon (a-Si:H) photovoltaic devices, attempts to improve mobility of the material directly have stagnated. Herein, we explore a method of utilizing nanostructuring of a-Si:H devices to allow for improved hole collection in thick absorber layers. This is achieved by etching an array of 150 nm diameter holes into intrinsic a-Si:H and then coating the structured material with p-type a-Si:H and a conformal zinc oxide transparent conducting layer. The inclusion of these nanoholes yields relative power conversion efficiency (PCE) increases of ∼45%, from 7.2 to 10.4% PCE for small area devices. Comparisons of optical properties, time-of-flight mobility measurements, and internal quantum efficiency spectra indicate this efficiency is indeed likely occurring from an improved collection pathway provided by the nanostructuring of the devices. Finally, we estimate that through modest optimizations of the design and fabrication, PCEs of beyond 13% should be obtainable for similar devices.
Coupling of Luminescent Solar Concentrators to Plasmonic Solar Cells
NASA Astrophysics Data System (ADS)
Wang, Shu-Yi
To make inexpensive solar cells is a continuous goal for solar photovoltaic (PV) energy industry. Thin film solar cells of various materials have been developed and continue to emerge in order to replace bulk silicon solar cells. A thin film solar cell not only uses less material but also requires a less expensive refinery process. In addition, other advantages coming along with small thickness are higher open circuit voltage and higher conversion efficiency. However, thin film solar cells, especially those made of silicon, have significant optical losses. In order to address this problem, this thesis investigates the spectral coupling of thin films PV to luminescent solar concentrators (LSC). LSC are passive devices, consisting of plastic sheets embedded with fluorescent dyes which absorb part of the incoming radiation spectrum and emit at specific wavelength. The emitted light is concentrated by total internal reflection to the edge of the sheet, where the PVs are placed. Since the light emitted from the LSC edge is usually in a narrow spectral range, it is possible to employ diverse strategies to enhance PV absorption at the peak of the emission wavelength. Employing plasmonic nanostructures has been shown to enhance absorption of thin films via forward scattering, diffraction and localized surface plasmon. These two strategies are theoretically investigated here for improving the absorption and elevating the output power of a thin film solar cell. First, the idea of spectral coupling of luminescent solar concentrators to plasmonic solar cells is introduced to assess its potential for increasing the power output. This study is carried out employing P3HT/PC60BM organic solar cells and LSC with Lumogen Red dyes. A simplified spectral coupling analysis is employed to predict the power density, considering the output spectrum of the LSC equivalent to the emission spectrum of the dye and neglecting any angular dependence. Plasmonic tuning is conducted to enhance absorption at the emission peak of the dye. A factorial increase in the output power density of coupled PV as compared to PV exposed directly to solar spectrum is observed for high light concentration on the edge. These initial results motivated a more in-depth study of coupled LSC-PV system, which took into account the radiative transport inside the realistic LSC. These investigations were carried out on LSCs using Lumogen Red305 and Rhodamine 6G dyes coupled to pristine and plasmonic ultra-thin film silicon solar cells. Prediction based on detailed balance shows that the coupled LSC-plasmonic solar cell can generate 63.7 mW/cm2 with a photocurrent density of 71.3 mA/cm2 which is higher than that of cSi solar cells available on current market. The second part of the thesis focuses on PV absorption enhancement techniques. First, the effect of vertical positioning of plasmonic nanostructures on absorption enhancement was theoretically investigated to understand which one of the three mechanisms usually responsible for the enhancement (forward scattering, diffraction and localized surface plamson) plays the dominant role. Simulation results suggested that the maximum enhancement occurred when placing the nanostructures in the rear side of the cell because of longer path length due to scattering. The experimental effort then switched focus on substrate patterning, which is a less expensive alternative to plasmonic absorption enhancement. Specifically, a nanostructured substrate was prepared by a simple electrochemical process based on two-step aluminum anodization technique. The absorption of thin film silicon deposited on these substrates showed a broadband enhancement. The overall photocurrent density was up to 40% higher than that of films deposited on flat substrates. In conclusion, the studies carried out in this thesis indicate that spectral coupling of LSCs to thin film solar cells could lead to significant improvements in PV output power density. Moreover, while the absorption of thin film solar cells can be enhanced by plasmonic nanostructures, it is shown that alternative methods, such as direct deposition of the films on inexpensively nanostructured substrates could also be employed to obtain significant enhancements. Combining these strategies may lead to inexpensive solar power harvesting systems with significant economic benefits. These strategies are not material-specific but applicable to a wide range of thin film solar cells.
Tailoring Thermal Radiative Properties with Doped-Silicon Nanowires
DOE Office of Scientific and Technical Information (OSTI.GOV)
Zhang, Zhuomin
Aligned doped-silicon nanowire (D-SiNW) arrays form a hyperbolic metamaterial in the mid-infrared and have unique thermal radiative properties, such as broadband omnidirectional absorption, low-loss negative refraction, etc. A combined theoretical and experimental investigation will be performed to characterize D-SiNW arrays and other metamaterials for tailoring thermal radiative properties. Near-field thermal radiation between anisotropic materials with hyperbolic dispersions will also be predicted for potential application in energy harvesting. A new kind of anisotropic metamaterial with a hyperbolic dispersion in a broad infrared region has been proposed and demonstrated based on aligned doped-silicon nanowire (D-SiNW) arrays. D-SiNW-based metamaterials have unique thermal radiativemore » properties, such as broadband omnidirectional absorption whose width and location can be tuned by varying the filling ratio and/or doping level. Furthermore, high figure of merit (FOM) can be achieved in a wide spectral region, suggesting that D-SiNW arrays may be used as a negative refraction material with much less loss than other structured materials, such as layered semiconductor materials. We have also shown that D-SiNWs and other nanostructures can significantly enhance near-field thermal radiation. The study of near-field radiative heat transfer between closely spaced objects and the electromagnetic wave interactions with micro/nanostructured materials has become an emerging multidisciplinary field due to its importance in advanced energy systems, manufacturing, local thermal management, and high spatial resolution thermal sensing and mapping. We have performed extensive study on the energy streamlines involving anisotropic metamaterials and the applicability of the effective medium theory for near-field thermal radiation. Graphene as a 2D material has attracted great attention in nanoelectronics, plasmonics, and energy harvesting. We have shown that graphene can be used to tailor the transmittance, reflectance, and absorptance of nanostructured materials. Furthermore, graphene can be used to enhance near-field coupling to increase the phonon tunneling probability. We have performed analysis of near-field thermophotovoltaic devices with backside reflecting mirror and with tungsten gratings. We have predicted a large enhancement of electroluminescent refrigeration at a separation distance down to 10 nm due to near-field thermal radiation effect. A heat flux measurement system is developed to measure the near-field radiation in vacuum. We have fabricated doped Si plates separated by sparsely distributed posts to create a 200-800 nm vacuum gap. Our measurement results demonstrate that 11 times enhancement of near-field thermal radiation between parallel doped-Si plates with a lateral dimension 1 cm by 1 cm.« less
Exciton Resonances in Novel Silicon Carbide Polymers
NASA Astrophysics Data System (ADS)
Burggraf, Larry; Duan, Xiaofeng
2015-05-01
A revolutionary technology transformation from electronics to excitionics for faster signal processing and computing will be advantaged by coherent exciton transfer at room temperature. The key feature required of exciton components for this technology is efficient and coherent transfer of long-lived excitons. We report theoretical investigations of optical properties of SiC materials having potential for high-temperature excitonics. Using Car-Parinello simulated annealing and DFT we identified low-energy SiC molecular structures. The closo-Si12C12 isomer, the most stable 12-12 isomer below 1100 C, has potential to make self-assembled chains and 2-D nanostructures to construct exciton components. Using TDDFT, we calculated the optical properties of the isomer as well as oligomers and 2-D crystal formed from the isomer as the monomer unit. This molecule has large optical oscillator strength in the visible. Its high-energy and low-energy transitions (1.15 eV and 2.56 eV) are nearly pure one-electron silicon-to-carbon transitions, while an intermediate energy transition (1.28 eV) is a nearly pure carbon-to-silicon one-electron charge transfer. These results are useful to describe resonant, coherent transfer of dark excitons in the nanostructures. Research supported by the Air Force Office of Scientific Research.
Toxicity assessment of SiC nanofibers and nanorods against bacteria.
Szala, Mateusz; Borkowski, Andrzej
2014-02-01
In the present study, evidence of the antibacterial effects of silicon carbide (SiC) nanofibers (NFSiC) and nanorods (NRSiC) obtained by combustion synthesis has been presented. It has been shown that the examined bacteria, Pseudomonas putida, could bind to the surface of the investigated SiC nanostructures. The results of respiration measurements, dehydrogenase activity measurements, and evaluation of viable bacteria after incubation with NFSiC and NRSiC demonstrated that the nanostructures of SiC affect the growth and activity of the bacteria examined. The direct count of bacteria stained with propidium iodide after incubation with SiC nanostructures revealed that the loss of cell membrane integrity could be one of the main effects leading to the death of the bacteria. © 2013 Published by Elsevier Inc.
Picosecond ultrasonics study of the vibrational modes of a nanostructure
NASA Astrophysics Data System (ADS)
Antonelli, G. Andrew; Maris, Humphrey J.; Malhotra, Sandra G.; Harper, James M. E.
2002-03-01
We report experiments in which a subpicosecond pump light pulse is used to excite vibrations in a nanostructure consisting of a periodic array of copper wires embedded in a glass matrix on a silicon substrate. The motion of the wires after excitation is detected using a time-delayed probe light pulse. From the measured data, it is possible to determine the frequencies νn and damping rates Γn of a number of the normal modes of the structure. These modes have frequencies lying in the range 1-30 GHz. By comparison of the measured νn and Γn with the frequencies and damping rates calculated from a computer simulation of the vibrations of the nanostructure, we have been able to deduce the vibration patterns of six of the normal modes.
Amjadipour, Mojtaba; MacLeod, Jennifer; Lipton-Duffin, Josh; Iacopi, Francesca; Motta, Nunzio
2017-08-25
Epitaxial growth of graphene on SiC is a scalable procedure that does not require any further transfer step, making this an ideal platform for graphene nanostructure fabrication. Focused ion beam (FIB) is a very promising tool for exploring the reduction of the lateral dimension of graphene on SiC to the nanometre scale. However, exposure of graphene to the Ga + beam causes significant surface damage through amorphisation and contamination, preventing epitaxial graphene growth. In this paper we demonstrate that combining a protective silicon layer with FIB patterning implemented prior to graphene growth can significantly reduce the damage associated with FIB milling. Using this approach, we successfully achieved graphene growth over 3C-SiC/Si FIB patterned nanostructures.
Silicon carbide at nanoscale: Finite single-walled to "infinite" multi-walled tubes
NASA Astrophysics Data System (ADS)
Adhikari, Kapil
A systematic ab initio study of silicon carbide (SiC) nanostructures, especially finite single-walled, infinite double- and multi-walled nanotubes and nanocones is presented. Electronic and structural properties of all these nanostructures have been calculated using hybrid density functionals (B3LYP and PBE0) as implemented in the GAUSSIAN 03/09 suite of software. The unusual dependence of band gap of silicon carbide nanotubes (SiCNT) has been explained as a direct consequence of curvature effect on the ionicity of the bonds. The study of fullerene hemisphere capped, finite SiC nanotubes indicates that the carbon-capped SiC nanotubes are energetically more preferred than silicon-capped finite or hydrogen terminated infinite nanotubes. Capping a nanotube by fullerene hemisphere reduces its band gap. SiC nanocones have also been investigated as possible cap structures of nanotubes. Electronic properties of the nanocones are found to be strongly dependent upon their tip and edge structures, with possible interesting applications in surface science. Three types of double-walled SiCNTs (n, n)@(m, m) (3 ≤ n ≤ 6 ; 7 ≤ m ≤ 12) have been studied using the finite cluster approximation. The stabilities of these nanotubes are of the same order as those of the single-walled SiC nanotubes and it should be experimentally possible to synthesize both single-walled and double-walled SiC nanotubes. The binding energy per atom or the cohesive energy of the double-walled nanotubes depends not only on the number of atoms but also on the coupling of the constituent single-walled nanotubes and their types. A study of binding energies, Mulliken charges, density of states and HOMO-LUMO gaps has been performed for all nanotubes from (n, n)@(n+3,n+3) to (n, n)@(n+6, n+6) (n=3-6). Evolution of band gaps of the SiCNTs with increase in the number of walls has also been investigated. The nature of interaction between transition metal atoms and silicon carbide nanotubes with different curvature has also been investigated. The curvature of the nanotubes affects the nature of the interaction between the nanotubes and the transition teal atoms. Our study of functionalized SiCNTs by 3d transition metal atoms indicates that these nanostructures can have possible applications in spintronics and nano-magnetic storage.
Das, Susobhan; Li, Jun; Hui, Rongqing
2015-01-01
Micro- and nano-structured electrodes have the potential to improve the performance of Li-ion batteries by increasing the surface area of the electrode and reducing the diffusion distance required by the charged carriers. We report the numerical simulation of Lithium-ion batteries with the anode made of core-shell heterostructures of silicon-coated carbon nanofibers. We show that the energy capacity can be significantly improved by reducing the thickness of the silicon anode to the dimension comparable or less than the Li-ion diffusion length inside silicon. The results of simulation indicate that the contraction of the silicon electrode thickness during the battery discharge process commonly found in experiments also plays a major role in the increase of the energy capacity. PMID:28347120
Electrically-detected ESR in silicon nanostructures inserted in microcavities
DOE Office of Scientific and Technical Information (OSTI.GOV)
Bagraev, Nikolay; Danilovskii, Eduard; Gets, Dmitrii
2014-02-21
We present the first findings of the new electrically-detected electron spin resonance technique (EDESR), which reveal the point defects in the ultra-narrow silicon quantum wells (Si-QW) confined by the superconductor δ- barriers. This technique allows the ESR identification without application of an external cavity, as well as a high frequency source and recorder, and with measuring the only response of the magnetoresistance, with internal GHz Josephson emission within frameworks of the normal-mode coupling (NMC) caused by the microcavities embedded in the Si-QW plane.
Shaping the third-harmonic radiation from silicon nanodimers
Wang, Lei; Kruk, Sergey; Xu, Lei; ...
2017-01-23
Recent progress in the study of resonant light confinement in high-index dielectric nanostructures suggests a new route for achieving efficient control of both electric and magnetic components of light. It also leads to the enhancement of nonlinear effects near electric and magnetic Mie resonances with an engineered radiation directionality. Furthermore we study the third-harmonic generation from dimers composed of pairs of two identical silicon nanoparticles and demonstrate, both numerically and experimentally, that the multipolar harmonic modes generated by the dimers near the Mie resonances allow the shaping of the directionality of nonlinear radiation.
High-fidelity large area nano-patterning of silicon with femtosecond light sheet
NASA Astrophysics Data System (ADS)
Sidhu, Mehra S.; Munjal, Pooja; Singh, Kamal P.
2018-01-01
We employ a femtosecond light sheet generated by a cylindrical lens to rapidly produce high-fidelity nano-structures over large area on silicon surface. The Fourier analysis of electron microscopy images of the laser-induced surface structures reveals sharp peaks indicating good homogeneity. We observed an emergence of second-order spatial periodicity on increasing the scan speed. Our reliable approach may rapidly nano-pattern curved solid surfaces and tiny objects for diverse potential applications in optical devices, structural coloring, plasmonic substrates and in high-harmonic generation.
Wu, Ping; Wang, Hui; Tang, Yawen; Zhou, Yiming; Lu, Tianhong
2014-03-12
A novel type of 3D porous Si-G micro/nanostructure (i.e., 3D interconnected network of graphene-wrapped porous silicon spheres, Si@G network) was constructed through layer-by-layer assembly and subsequent in situ magnesiothermic-reduction methodology. Compared with bare Si spheres, the as-synthesized Si@G network exhibits markedly enhanced anodic performance in terms of specific capacity, cycling stability, and rate capability, making it an ideal anode candidate for high-energy, long-life, and high-power lithium-ion batteries.
Electrochemical Impedance Imaging via the Distribution of Diffusion Times
NASA Astrophysics Data System (ADS)
Song, Juhyun; Bazant, Martin Z.
2018-03-01
We develop a mathematical framework to analyze electrochemical impedance spectra in terms of a distribution of diffusion times (DDT) for a parallel array of random finite-length Warburg (diffusion) or Gerischer (reaction-diffusion) circuit elements. A robust DDT inversion method is presented based on complex nonlinear least squares regression with Tikhonov regularization and illustrated for three cases of nanostructured electrodes for energy conversion: (i) a carbon nanotube supercapacitor, (ii) a silicon nanowire Li-ion battery, and (iii) a porous-carbon vanadium flow battery. The results demonstrate the feasibility of nondestructive "impedance imaging" to infer microstructural statistics of random, heterogeneous materials.
Nanoscale silver-assisted wet etching of crystalline silicon for anti-reflection surface textures.
Li, Rui; Wang, Shuling; Chuwongin, Santhad; Zhou, Weidong
2013-01-01
We report here an electro-less metal-assisted chemical etching (MacEtch) process as light management surface-texturing technique for single crystalline Si photovoltaics. Random Silver nanostructures were formed on top of the Si surface based on the thin film evaporation and annealing process. Significant reflection reduction was obtained from the fabricated Si sample, with approximately 2% reflection over a wide spectra range (300 to 1050 nm). The work demonstrates the potential of MacEtch process for anti-reflection surface texture fabrication of large area, high efficiency, and low cost thin film solar cell.
Three-dimensional photonic crystals created by single-step multi-directional plasma etching.
Suzuki, Katsuyoshi; Kitano, Keisuke; Ishizaki, Kenji; Noda, Susumu
2014-07-14
We fabricate 3D photonic nanostructures by simultaneous multi-directional plasma etching. This simple and flexible method is enabled by controlling the ion-sheath in reactive-ion-etching equipment. We realize 3D photonic crystals on single-crystalline silicon wafers and show high reflectance (>95%) and low transmittance (<-15dB) at optical communication wavelengths, suggesting the formation of a complete photonic bandgap. Moreover, our method simply demonstrates Si-based 3D photonic crystals that show the photonic bandgap effect in a shorter wavelength range around 0.6 μm, where further fine structures are required.
Self-organized broadband light trapping in thin film amorphous silicon solar cells.
Martella, C; Chiappe, D; Delli Veneri, P; Mercaldo, L V; Usatii, I; Buatier de Mongeot, F
2013-06-07
Nanostructured glass substrates endowed with high aspect ratio one-dimensional corrugations are prepared by defocused ion beam erosion through a self-organized gold (Au) stencil mask. The shielding action of the stencil mask is amplified by co-deposition of gold atoms during ion bombardment. The resulting glass nanostructures enable broadband anti-reflection functionality and at the same time ensure a high efficiency for diffuse light scattering (Haze). It is demonstrated that the patterned glass substrates exhibit a better photon harvesting than the flat glass substrate in p-i-n type thin film a-Si:H solar cells.
Granitzer, P; Rumpf, K; Gonzalez-Rodriguez, R; Coffer, J L; Reissner, M
2015-12-21
The purpose of this work is a detailed comparison of the fundamental magnetic properties of nanocomposite systems consisting of Fe3O4 nanoparticle-loaded porous silicon as well as silicon nanotubes. Such composite structures are of potential merit in the area of magnetically guided drug delivery. For magnetic systems to be utilized in biomedical applications, there are certain magnetic properties that must be fulfilled. Therefore magnetic properties of embedded Fe3O4-nanoparticles in these nanostructured silicon host matrices, porous silicon and silicon nanotubes, are investigated. Temperature-dependent magnetic investigations have been carried out for four types of iron oxide particle sizes (4, 5, 8 and 10 nm). The silicon host, in interplay with the iron oxide nanoparticle size, plays a sensitive role. It is shown that Fe3O4 loaded porous silicon and SiNTs differ significantly in their magnetic behavior, especially the transition between superparamagnetic behavior and blocked state, due to host morphology-dependent magnetic interactions. Importantly, it is found that all investigated samples meet the magnetic precondition of possible biomedical applications of exhibiting a negligible magnetic remanence at room temperature.
NASA Astrophysics Data System (ADS)
Ko, Hyunhyub
This dissertation presents the design of organic/inorganic hybrid 2D and 3D nanostructured arrays via controlled assembly of nanoscale building blocks. Two representative nanoscale building blocks such as carbon nanotubes (one-dimension) and metal nanoparticles (zero-dimension) are the core materials for the study of solution-based assembly of nanostructured arrays. The electrical, mechanical, and optical properties of the assembled nanostructure arrays have been investigated for future device applications. We successfully demonstrated the prospective use of assembled nanostructure arrays for electronic and sensing applications by designing flexible carbon nanotube nanomembranes as mechanical sensors, highly-oriented carbon nanotubes arrays for thin-film transistors, and gold nanoparticle arrays for SERS chemical sensors. In first section, we fabricated highly ordered carbon nanotube (CNT) arrays by tilted drop-casting or dip-coating of CNT solution on silicon substrates functionalized with micropatterned self-assembled monolayers. We further exploited the electronic performance of thin-film transistors based on highly-oriented, densely packed CNT micropatterns and showed that the carrier mobility is largely improved compared to randomly oriented CNTs. The prospective use of Raman-active CNTs for potential mechanical sensors has been investigated by studying the mechano-optical properties of flexible carbon nanotube nanomembranes, which contain freely-suspended carbon nanotube array encapsulated into ultrathin (<50 nm) layer-by-layer (LbL) polymer multilayers. In second section, we fabricated 3D nano-canal arrays of porous alumina membranes decorated with gold nanoparticles for prospective SERS sensors. We showed extraordinary SERS enhancement and suggested that the high performance is associated with the combined effects of Raman-active hot spots of nanoparticle aggregates and the optical waveguide properties of nano-canals. We demonstrated the ability of this SERS substrate for trace level sensing of nitroaromatic explosives by detecting down to 100 zeptogram (˜330 molecules) of DNT.
Determination of surface morphology of TiO2 nanostructure using synchrotron radiation
NASA Astrophysics Data System (ADS)
Das, Gangadhar; Kumar, Manoj; Biswas, A. K.; Khooha, Ajay; Mondal, Puspen; Tiwari, M. K.
2017-05-01
Nanostructures of Titanium oxide (TiO2) are being studied for many promising applications, e.g., solar photovoltaics, solar water splitting for H2 fuel generation etc., due to their excellent photo-catalytic properties. We have synthesized low-dimensional TiO2 nanoparticles by gas phase CW CO2 laser pyrolysis. The laser synthesis process has been optimized for the deposition of highly pure, nearly mono-dispersed TiO2 nanoparticles on silicon substrates. Hard x-ray standing wave-field (XSW) measurements in total reflection geometry were carried out on the BL-16 beamline of Indus-2 synchrotron radiation facility in combination with x-ray reflectivity and grazing incidence x-ray fluorescence measurements for the determination of surface morphology of the deposited TiO2 nanostructures. The average particle size of TiO2 nanostructure estimated using transmission electron microscopy (TEM) was found to closely agree with the XSW and grazing incidence x-ray diffraction (GIXRD) results.
NASA Astrophysics Data System (ADS)
Chen, Yong; Luo, Guanghong; Diao, Jiajie; Chornoguz, Olesya; Reeves, Mark; Vertes, Akos
2007-04-01
Due to their optical properties and morphology, thin films formed of nanoparticles are potentially new platforms for soft laser desorption/ionization (SLDI) mass spectrometry. Thin films of gold nanoparticles (with 12±1 nm particle size) were prepared by evaporation-driven vertical colloidal deposition and used to analyze a series of directly deposited polypeptide samples. In this new SLDI method, the required laser fluence for ion detection was equal or less than what was needed for matrix-assisted laser desorption/ionization (MALDI) but the resulting spectra were free of matrix interferences. A silicon microcolumn array-based substrate (a.k.a. black silicon) was developed as a new matrix-free laser desorption ionization surface. When low-resistivity silicon wafers were processed with a 22 ps pulse length 3×ω Nd:YAG laser in air, SF6 or water environment, regularly arranged conical spikes emerged. The radii of the spike tips varied with the processing environment, ranging from approximately 500 nm in water, to ~2 µm in SF6 gas and to ~5 µm in air. Peptide mass spectra directly induced by a nitrogen laser showed the formation of protonated ions of angiotensin I and II, substance P, bradykinin fragment 1-7, synthetic peptide, pro14-arg, and insulin from the processed silicon surfaces but not from the unprocessed areas. Threshold fluences for desorption/ionization were similar to those used in MALDI. Although compared to silicon nanowires the threshold laser pulse energy for ionization is significantly (~10×) higher, the ease of production and robustness of microcolumn arrays offer complementary benefits.
Solar Cell Nanotechnology Final Technical Report
DOE Office of Scientific and Technical Information (OSTI.GOV)
Das, Biswajit
2014-05-07
The objective of this project is to develop a low cost nonlithographic nanofabrication technology for the fabrication of thin film porous templates as well as uniform arrays of semiconductor nanostructures for the implementation of high efficiency solar cells. Solar cells based on semiconductor nanostructures are expected to have very high energy conversion efficiencies due to the increased absorption coefficients of semiconductor nanostructures. In addition, the thin film porous template can be used for optimum surface texturing of solar cells leading to additional enhancement in energy conversion efficiency. An important requirement for these applications is the ability to synthesize nanostructure arraysmore » of different dimensions with good size control. This project employed nanoporous alumina templates created by the anodization of aluminum thin films deposited on glass substrates for the fabrication of the nanostructures and optimized the process parameters to obtain uniform pore diameters. An additional requirement is uniformity or regularity of the nanostructure arrays. While constant current anodization was observed to provide controlled pore diameters, constant voltage anodization was needed for regularity of the nanostructure arrays. Thus a two-step anodization process was investigated and developed in this project for improving the pore size distribution and pore periodicity of the nanoporous alumina templates. CdTe was selected to be the active material for the nanowires, and the process for the successful synthesis of CdTe nanowires was developed in this project. Two different synthesis approaches were investigated in this project, electrochemical and electrophoretic deposition. While electrochemical synthesis was successfully employed for the synthesis of nanowires inside the pores of the alumina templates, the technique was determined to be non-optimum due to the need of elevated temperature that is detrimental to the structural integrity of the nanoporous alumina templates. In order to eliminate this problem, electrophoretic deposition was selected as the more appropriate technique, which involves the guided deposition of semiconductor nanoparticles in the presence of ultrasonic energy to form the crystalline nanowires. Extensive experimental research was carried out to optimize the process parameters for formation of crystalline nanowires. It was observed that the environmental bath temperature plays a critical role in determining the structural integrity of the nanowires and hence their lengths. Investigation was carried out for the formation of semitransparent ohmic contacts on the nanowires to facilitate photocurrent spectroscopy measurements as well as for solar cell implementation. Formation of such ohmic contacts was found to be challenging and a process involving mechanical and electrochemical polishing was developed to facilitate such contacts. The use of nanoporous alumina templates for the surface texturing of mono- and multi-crystalline solar cells was extensively investigated by electrochemical etching of the silicon through the pores of the nanoporous templates. The processes for template formation as well as etching were optimized and the alumina/silicon interface was investigated using capacitance-voltage characterization. The process developed was found to be viable for improving solar cell performance.« less
Barrios, Carlos Angulo; Canalejas-Tejero, Víctor
2017-01-01
We report on a top-down method for the controlled fabrication of three-dimensional (3D), closed, thin-shelled, hollow nanostructures (nanocages) on planar supports. The presented approach is based on conventional microelectronic fabrication processes and exploits the permeability of thin metal films to hollow-out polymer-filled metal nanocages through an oxygen-plasma process. The technique is used for fabricating arrays of cylindrical nanocages made of thin Al shells on silicon substrates. This hollow metal configuration features optical resonance as revealed by spectral reflectance measurements and numerical simulations. The fabricated nanocages were demonstrated as a refractometric sensor with a measured bulk sensitivity of 327 nm/refractive index unit (RIU). The pattern design flexibility and controllability offered by top-down nanofabrication techniques opens the door to the possibility of massive integration of these hollow 3D nano-objects on a chip for applications such as nanocontainers, nanoreactors, nanofluidics, nano-biosensors and photonic devices.
Schröder, Tim; Trusheim, Matthew E.; Walsh, Michael; Li, Luozhou; Zheng, Jiabao; Schukraft, Marco; Sipahigil, Alp; Evans, Ruffin E.; Sukachev, Denis D.; Nguyen, Christian T.; Pacheco, Jose L.; Camacho, Ryan M.; Bielejec, Edward S.; Lukin, Mikhail D.; Englund, Dirk
2017-01-01
The controlled creation of defect centre—nanocavity systems is one of the outstanding challenges for efficiently interfacing spin quantum memories with photons for photon-based entanglement operations in a quantum network. Here we demonstrate direct, maskless creation of atom-like single silicon vacancy (SiV) centres in diamond nanostructures via focused ion beam implantation with ∼32 nm lateral precision and <50 nm positioning accuracy relative to a nanocavity. We determine the Si+ ion to SiV centre conversion yield to be ∼2.5% and observe a 10-fold conversion yield increase by additional electron irradiation. Low-temperature spectroscopy reveals inhomogeneously broadened ensemble emission linewidths of ∼51 GHz and close to lifetime-limited single-emitter transition linewidths down to 126±13 MHz corresponding to ∼1.4 times the natural linewidth. This method for the targeted generation of nearly transform-limited quantum emitters should facilitate the development of scalable solid-state quantum information processors. PMID:28548097
Schroder, Tim; Trusheim, Matthew E.; Walsh, Michael; ...
2017-05-26
The controlled creation of defect centre—nanocavity systems is one of the outstanding challenges for efficiently interfacing spin quantum memories with photons for photon-based entanglement operations in a quantum network. Here we demonstrate direct, maskless creation of atom-like single silicon vacancy (SiV) centres in diamond nanostructures via focused ion beam implantation with ~32 nm lateral precision and <50 nm positioning accuracy relative to a nanocavity. We determine the Si+ ion to SiV centre conversion yield to be ~2.5% and observe a 10-fold conversion yield increase by additional electron irradiation. Low-temperature spectroscopy reveals inhomogeneously broadened ensemble emission linewidths of ~51 GHz andmore » close to lifetime-limited single-emitter transition linewidths down to 126±13 MHz corresponding to ~1.4 times the natural linewidth. Furthermore, this method for the targeted generation of nearly transform-limited quantum emitters should facilitate the development of scalable solid-state quantum information processors.« less
DOE Office of Scientific and Technical Information (OSTI.GOV)
Schroder, Tim; Trusheim, Matthew E.; Walsh, Michael
The controlled creation of defect centre—nanocavity systems is one of the outstanding challenges for efficiently interfacing spin quantum memories with photons for photon-based entanglement operations in a quantum network. Here we demonstrate direct, maskless creation of atom-like single silicon vacancy (SiV) centres in diamond nanostructures via focused ion beam implantation with ~32 nm lateral precision and <50 nm positioning accuracy relative to a nanocavity. We determine the Si+ ion to SiV centre conversion yield to be ~2.5% and observe a 10-fold conversion yield increase by additional electron irradiation. Low-temperature spectroscopy reveals inhomogeneously broadened ensemble emission linewidths of ~51 GHz andmore » close to lifetime-limited single-emitter transition linewidths down to 126±13 MHz corresponding to ~1.4 times the natural linewidth. Furthermore, this method for the targeted generation of nearly transform-limited quantum emitters should facilitate the development of scalable solid-state quantum information processors.« less
Zuben, E S Von; Oliveira, A G; Chorilli, M; Scarpa, M V
2018-03-05
A reversed-phase liquid chromatography (RP-LC) method was successfully developed and validated for the determination of methotrexate in nanostructured liquid crystalline systems composed by polyether functional siloxane and silicone polyether copolymer. The LC method was performed on RP C18-ODS column, Agilent Zorbax® (4.6 x 250 mm, 5 μm), maintained at room temperature, with a mobile phase constituted by a mixture of 50 mM ammonium acetate buffer (pH 6.0) and methanol (77:23,v/v) with a flow rate of 1.0 mL/min, using ultraviolet detection at 313 nm. The parameters used in the validation process were linearity, specificity, intra and inter-day precision, accuracy, robustness. The quantitation and detection limits yielded good results. The calibration plot assumed linear behavior from 5.0-150.0 μg. mL-1 (r2 = 0.9999). The methotrexate was subjected to oxidation, acid, base and neutral degradation, photolysis and heat as stress conditions. There were no interfering peaks at or near the retention time of methotrexate. The nanostructured liquid crystalline systems did not interfere with the analysis and the recovery was quantitative. The intra and inter-day assay relative standard deviation were less than 0.20 %. The method developed proved to be simple, sensitive, accurate, precise, reproducible and therefore adequate for routine analysis of methotrexate in nanostructured liquid crystalline systems.
Thermally Induced Silane Dehydrocoupling on Silicon Nanostructures (International ed.)
2016-07-29
grafted. When performed on a mesopo- rous Si wafer, the perfluoro reagent yields a superhydrophobic surface (contact angle 1518). The bromo-derivative... superhydrophobic behavior, with a water contact angle of 1508 (Figure S13 and S14). As with the octadecylsilane derivative, these surface chemistries were not
75 FR 13486 - Application(s) for Duty-Free Entry of Scientific Instruments
Federal Register 2010, 2011, 2012, 2013, 2014
2010-03-22
... nanostructures. This instrument combines an optical microscope with a scanning probe imaging system. Specifically... soft materials than other instruments, as it detects the probe coming close to the sample surface by... conventional AFM type silicon cantilevers as well as cantilevered optical fiber probes with exposed probe...
NASA Astrophysics Data System (ADS)
Chadha, Arvinder Singh
Silicon photonics is realized as a promising platform to meet the requirements of higher bandwidth and low cost high density monolithic integration. More recent demonstrations of a variety of stretchable, foldable and transfer printed ultra-thin silicon integrated circuits have instigated the use of flexible silicon nanomembrane for practical applications. Equally impressive innovations are demonstrated in the area of flat screen displays, smart cards, eyeglasses, and wearable displays. However, the overall efficiency of a variety of optical device is limited by poor light management resulting from difficulty of light coupling, small absorption volume in thin-film nanomembrane, and glare at oblique incidence to name a few. The aim of this thesis is to present the work of micro- and nano-scale structures for out-of-plane light coupling and absorption for integrated silicon photonics and high performance solar cells and photodetectors, with maximum absorption in the functional layer and minimal front-surface reflection and minimal rear-surface transmission. Perfect absorption in a variety of semiconductor nanomembranes (NM) and atomic layers of two dimensional (2D) materials over different wavelength spectrum is realized due to the local field intensity enhancement at critical coupling to the guided resonances of a photonic crystal (PC). A judicious choice of grating parameters tailors the power diffracted in the zeorth order and higher order modes making the device work as a broadband reflector, an in-plane coupler or a combination of both reflector and an in-plane coupler. At surface normal incidence, the polarization dependence of the grating based reflector is eliminated by the use of 2D photonic crystals. The incorporation of such a reflector after the functional nanomembrane layer reduces the back-surface transmission. Effect of incident angle, polarization and incident plane misalignment dependence on the reflection of a silicon NM based reflector are investigated in detail. The front-surface Fresnel reflection is reduced with the incorporation of an omni-directional anti-reflection coating (Omni-ARC) based on nanostructures or by deposition of graded refractive index (GRIN) films. A design methodology based on the comparison of the rate of change of the refractive index profile of nanostructures of different shapes and thickness as an equivalent GRIN film suggests the minimum feature size needed to give near perfect ARC. Numerical models were built to account for the non - uniform GRIN film deposition on both rigid and flexible, flat and curved surfaces resulting from the variation in the resonant infrared matrix-assisted pulsed laser evaporation (RIR-MAPLE) process technology. With the miniaturization of the devices, the effect of finite beam size and finite active area of the photonic components on the optical properties like transmission, reflection and scattering loss was studied as well. All the numerical studies presented in the thesis are validated by experimental results.
Oxygen absorption in free-standing porous silicon: a structural, optical and kinetic analysis.
Cisneros, Rodolfo; Pfeiffer, Heriberto; Wang, Chumin
2010-01-16
Porous silicon (PSi) is a nanostructured material possessing a huge surface area per unit volume. In consequence, the adsorption and diffusion of oxygen in PSi are particularly important phenomena and frequently cause significant changes in its properties. In this paper, we study the thermal oxidation of p+-type free-standing PSi fabricated by anodic electrochemical etching. These free-standing samples were characterized by nitrogen adsorption, thermogravimetry, atomic force microscopy and powder X-ray diffraction. The results show a structural phase transition from crystalline silicon to a combination of cristobalite and quartz, passing through amorphous silicon and amorphous silicon-oxide structures, when the thermal oxidation temperature increases from 400 to 900 °C. Moreover, we observe some evidence of a sinterization at 400 °C and an optimal oxygen-absorption temperature about 700 °C. Finally, the UV/Visible spectrophotometry reveals a red and a blue shift of the optical transmittance spectra for samples with oxidation temperatures lower and higher than 700 °C, respectively.
Temperature-Dependent Nanofabrication on Silicon by Friction-Induced Selective Etching.
Jin, Chenning; Yu, Bingjun; Xiao, Chen; Chen, Lei; Qian, Linmao
2016-12-01
Friction-induced selective etching provides a convenient and practical way for fabricating protrusive nanostructures. A further understanding of this method is very important for establishing a controllable nanofabrication process. In this study, the effect of etching temperature on the formation of protrusive hillocks and surface properties of the etched silicon surface was investigated. It is found that the height of the hillock produced by selective etching increases with the etching temperature before the collapse of the hillock. The temperature-dependent selective etching rate can be fitted well by the Arrhenius equation. The etching at higher temperature can cause rougher silicon surface with a little lower elastic modulus and hardness. The contact angle of the etched silicon surface decreases with the etching temperature. It is also noted that no obvious contamination can be detected on silicon surface after etching at different temperatures. As a result, the optimized condition for the selective etching was addressed. The present study provides a new insight into the control and application of friction-induced selective nanofabrication.
Novel organosilicone materials and patterning techniques for nanoimprint lithography
NASA Astrophysics Data System (ADS)
Pina, Carlos Alberto
Nanoimprint Lithography (NIL) is a high-throughput patterning technique that allows the fabrication of nanostructures with great precision. It has been listed on the International Technology Roadmap for Semiconductors (ITRS) as a candidate technology for future generation Si chip manufacturing. In nanoimprint Lithography a resist material, e.g. a thermoplastic polymer, is placed in contact with a mold and then mechanically deformed under an applied load to transfer the nano-features on the mold surface into the resist. The success of NIL relies heavily in the capability of fabricating nanostructures on different types of materials. Thus, a key factor for NIL implementation in industrial settings is the development of advanced materials suitable as the nanoimprint resist. This dissertation focuses on the engineering of new polymer materials suitable as NIL resist. A variety of silicone-based polymer precursors were synthesized and formulated for NIL applications. High throughput and high yield nanopatterning was successfully achieved. Furthermore, additional capabilities of the developed materials were explored for a range of NIL applications such as their use as flexible, UV-transparent stamps and silicon compatible etching layers. Finally, new strategies were investigated to expand the NIL potentiality. High throughput, non-residual layer imprinting was achieved with the newly developed resist materials. In addition, several strategies were designed for the precise control of nanoscale size patterned structures with multifunctional resist systems by post-imprinting modification of the pattern size. These developments provide NIL with a new set of tools for a variety of additional important applications.
NASA Astrophysics Data System (ADS)
Liu, Runhan; Yuan, Ying; Long, Huabao; Peng, Sha; Wei, Dong; Zhang, Xinyu; Wang, Haiwei; Xie, Changsheng
2018-02-01
The intense surface plasmons (SPs) can be generated by patterned metal nano-structure arrays, through coupling incident light onto the functioned metal surface, so as to construct highly constrained surface electromagnetic modes. Therefore, a localized micro-nano-field array with a highly compressed surface electron distribution, can also be shaped and even nano-focused over the surface, which will lead to a lot of special physical effects such as anti-reflection effect, and thus indicate many new potential applications in the field of nano-photonics and -optoelectronics. In this paper, several typical patterned sub-wavelength metal nano-structure arrays were designed according to the process, in which common silicon wafer was employed as the substrate material and aluminum as the metal film with different structural size and arrangement circle. In addition, by adjusting the dielectric constant of metal material appropriately, the power control effect on metallic nanostructure was simulated. The key properties such as the excitation intensity of the surface plasmons were studied by simulating the reflectivity characteristic curves and the electric field distribution of the nanostructure excited by incident infrared beams. It is found that the angle of corners, the arrangement cycle and the metal material properties of the patterned nano-structures can be utilized as key factors to control the excitation intensity of surface plasmons.
Characterization of perovskite layer on various nanostructured silicon wafer
NASA Astrophysics Data System (ADS)
Rostan, Nur Fairuz Mohd; Sepeai, Suhaila; Ramli, Noor Fadhilah; Azhari, Ayu Wazira; Ludin, Norasikin Ahmad; Teridi, Mohd Asri Mat; Ibrahim, Mohd Adib; Zaidi, Saleem H.
2017-05-01
Crystalline silicon (c-Si) solar cell dominates 90% of photovoltaic (PV) market. The c-Si is the most mature of all PV technologies and expected to remain leading the PV technology by 2050. The attractive characters of Si solar cell are stability, long lasting and higher lifetime. Presently, the efficiency of c-Si solar cell is still stuck at 25% for one and half decades. Tandem approach is one of the attempts to improve the Si solar cell efficiency with higher bandgap layer is stacked on top of Si bottom cell. Perovskite offers a big potential to be inserted into a tandem solar cell. Perovskite with bandgap of 1.6 to 1.9 eV will be able to absorb high energy photons, meanwhile c-Si with bandgap of 1.124 eV will absorb low energy photons. The high carrier mobility, high carrier lifetime, highly compatible with both solution and evaporation techniques makes perovskite an eligible candidate for perovskite-Si tandem configuration. The solution of methyl ammonium lead iodide (MAPbI3) was prepared by single step precursor process. The perovskite layer was deposited on different c-Si surface structure, namely planar, textured and Si nanowires (SiNWs) by using spin-coating technique at different rotation speeds. The nanostructure of Si surface was textured using alkaline based wet chemical etching process and SiNW was grown using metal assisted etching technique. The detailed surface morphology and absorbance of perovskite were studied in this paper. The results show that the thicknesses of MAPbI3 were reduced with the increasing of rotation speed. In addition, the perovskite layer deposited on the nanostructured Si wafer became rougher as the etching time and rotation speed increased. The average surface roughness increased from ˜24 nm to ˜38 nm for etching time range between 5-60 min at constant low rotation speed (2000 rpm) for SiNWs Si wafer.
A study of the vibrational modes of a nanostructure with picosecond ultrasonics
NASA Astrophysics Data System (ADS)
Antonelli, G. Andrew; Maris, Humphrey J.; Malhotra, Sandra G.; Harper, James M. E.
2002-05-01
We describe experiments in which a sub-picosecond pump light pulse is used to excite vibrations in a nanostructure. The sample consists of a periodic array of copper wires embedded in a glass matrix on a silicon substrate. The motion of the wires after excitation is detected using a time-delayed probe light pulse. From the data, it is possible to determine the frequencies νn and damping rates Γn of a number of the normal modes of the structure. These modes have frequencies lying in the range 1-30 GHz. By comparison of the measured νn and Γn with the frequencies and damping rates calculated from a computer simulation of the vibrations of the nanostructure, we have been able to identify the different normal modes and deduce their vibration patterns.
Becker, C.; Wyss, P.; Eisenhauer, D.; Probst, J.; Preidel, V.; Hammerschmidt, M.; Burger, S.
2014-01-01
Crystalline silicon photonic crystal slabs are widely used in various photonics applications. So far, the commercial success of such structures is still limited owing to the lack of cost-effective fabrication processes enabling large nanopatterned areas (≫ 1 cm2). We present a simple method for producing crystalline silicon nanohole arrays of up to 5 × 5 cm2 size with lattice pitches between 600 and 1000 nm on glass and flexible plastic substrates. Exclusively up-scalable, fast fabrication processes are applied such as nanoimprint-lithography and silicon evaporation. The broadband light trapping efficiency of the arrays is among the best values reported for large-area experimental crystalline silicon nanostructures. Further, measured photonic crystal resonance modes are in good accordance with light scattering simulations predicting strong near-field intensity enhancements greater than 500. Hence, the large-area silicon nanohole arrays might become a promising platform for ultrathin solar cells on lightweight substrates, high-sensitive optical biosensors, and nonlinear optics. PMID:25073935
Bio-inspired Fabrication of Complex Hierarchical Structure in Silicon.
Gao, Yang; Peng, Zhengchun; Shi, Tielin; Tan, Xianhua; Zhang, Deqin; Huang, Qiang; Zou, Chuanping; Liao, Guanglan
2015-08-01
In this paper, we developed a top-down method to fabricate complex three dimensional silicon structure, which was inspired by the hierarchical micro/nanostructure of the Morpho butterfly scales. The fabrication procedure includes photolithography, metal masking, and both dry and wet etching techniques. First, microscale photoresist grating pattern was formed on the silicon (111) wafer. Trenches with controllable rippled structures on the sidewalls were etched by inductively coupled plasma reactive ion etching Bosch process. Then, Cr film was angled deposited on the bottom of the ripples by electron beam evaporation, followed by anisotropic wet etching of the silicon. The simple fabrication method results in large scale hierarchical structure on a silicon wafer. The fabricated Si structure has multiple layers with uniform thickness of hundreds nanometers. We conducted both light reflection and heat transfer experiments on this structure. They exhibited excellent antireflection performance for polarized ultraviolet, visible and near infrared wavelengths. And the heat flux of the structure was significantly enhanced. As such, we believe that these bio-inspired hierarchical silicon structure will have promising applications in photovoltaics, sensor technology and photonic crystal devices.
Electrochemical synthesis of 1D core-shell Si/TiO2 nanotubes for lithium ion batteries
NASA Astrophysics Data System (ADS)
Kowalski, Damian; Mallet, Jeremy; Thomas, Shibin; Nemaga, Abirdu Woreka; Michel, Jean; Guery, Claude; Molinari, Michael; Morcrette, Mathieu
2017-09-01
Silicon negative electrode for lithium ion battery was designed in the form of self-organized 1D core-shell nanotubes to overcome shortcomings linked to silicon volume expansion upon lithiation/delithiation typically occurring with Si nanoparticles. The negative electrode was formed on TiO2 nanotubes in two step electrochemical synthesis by means of anodizing of titanium and electrodeposition of silicon using ionic liquid electrolytes. Remarkably, it was found that the silicon grows perpendicularly to the z-axis of nanotube and therefore its thickness can be precisely controlled by the charge passed in the electrochemical protocol. Deposited silicon creates a continuous Si network on TiO2 nanotubes without grain boundaries and particle-particle interfaces, defining its electrochemical characteristics under battery testing. In the core-shell system the titania nanotube play a role of volume expansion stabilizer framework holding the nanostructured silicon upon lithiation/delithiation. The nature of Si shell and presence of titania core determine stable performance as negative electrode tested in half cell of CR2032 coin cell battery.
NASA Astrophysics Data System (ADS)
Cristoforetti, G.; Anzalone, A.; Baffigi, F.; Bussolino, G.; D'Arrigo, G.; Fulgentini, L.; Giulietti, A.; Koester, P.; Labate, L.; Tudisco, S.; Gizzi, L. A.
2014-09-01
One of the most interesting research fields in laser-matter interaction studies is the investigation of effects and mechanisms produced by nano- or micro-structured targets, mainly devoted to the enhancing of laser-target or laser-plasma coupling. In intense and ultra-intense laser interaction regimes, the observed enhancement of x-ray plasma emission and/or hot electron conversion efficiency is explained by a variety of mechanisms depending on the dimensions and shape of the structures irradiated. In the present work, the attention is mainly focused on the lowering of the plasma formation threshold which is induced by the larger absorptivity. Flat and nanostructured silicon targets were here irradiated with an ultrashort laser pulse, in the range 1 × 1017-2 × 1018 W µm2 cm-2. The effects of structures on laser-plasma coupling were investigated at different laser pulse polarizations, by utilizing x-ray yield and 3/2ω harmonics emission. While the measured enhancement of x-ray emission is negligible at intensities larger than 1018 W µm2 cm-2, due to the destruction of the structures by the amplified spontaneous emission (ASE) pre-pulse, a dramatic enhancement, strongly dependent on pulse polarization, was observed at intensities lower than ˜3.5 × 1017 W µm2 cm-2. Relying on the three-halves harmonic emission and on the non-isotropic character of the x-ray yield, induced by the two-plasmon decay instability, the results are explained by the significant lowering of the plasma threshold produced by the nanostructures. In this view, the strong x-ray enhancement obtained by s-polarized pulses is produced by the interaction of the laser pulse with the preplasma, resulting from the interaction of the ASE pedestal with the nanostructures.
Efficiency improvement of silicon solar cells enabled by ZnO nanowhisker array coating
2012-01-01
An efficient antireflection coating is critical for the improvement of silicon solar cell performance via increased light coupling. Here, we have grown well-aligned ZnO nanowhisker (NW) arrays on Czochralski silicon solar cells by a seeding-growth two-step process. It is found that the ZnO NWs have a great effect on the macroscopic antireflection effect and, therefore, improves the solar cell performance. The ZnO NW array-coated solar cells display a broadband reflection suppression from 500 to 1,100 nm, and the minimum reflectance smaller than 3% can easily be achieved. By optimizing the time of ZnO NW growth, it has been confirmed that an increase of 3% relatively in the solar cell efficiency can be obtained. These results are quite interesting for the application of ZnO nanostructure in the fabrication of high-efficiency silicon solar cells. PMID:22704578
Patterned microstructures formed with MeV Au implantation in Si(1 0 0)
NASA Astrophysics Data System (ADS)
Rout, Bibhudutta; Greco, Richard R.; Zachry, Daniel P.; Dymnikov, Alexander D.; Glass, Gary A.
2006-09-01
Energetic (MeV) Au implantation in Si(1 0 0) (n-type) through masked micropatterns has been used to create layers resistant to KOH wet etching. Microscale patterns were produced in PMMA and SU(8) resist coatings on the silicon substrates using P-beam writing and developed. The silicon substrates were subsequently exposed using 1.5 MeV Au 3+ ions with fluences as high as 1 × 10 16 ions/cm 2 and additional patterns were exposed using copper scanning electron microscope calibration grids as masks on the silicon substrates. When wet etched with KOH microstructures were created in the silicon due to the resistance to KOH etching cause by the Au implantation. The process of combining the fabrication of masked patterns with P-beam writing with broad beam Au implantation through the masks can be a promising, cost-effective process for nanostructure engineering with Si.
Silina, Yuliya E; Koch, Marcus; Volmer, Dietrich A
2015-03-01
In this study, the influence of surface morphology, reagent ions and surface restructuring effects on atmospheric pressure laser desorption/ionization (LDI) for small molecules after laser irradiation of palladium self-assembled nanoparticular (Pd-NP) structures has been systematically studied. The dominant role of surface morphology during the LDI process, which was previously shown for silicon-based substrates, has not been investigated for metal-based substrates before. In our experiments, we demonstrated that both the presence of reagent ions and surface reorganization effects--in particular, melting--during laser irradiation was required for LDI activity of the substrate. The synthesized Pd nanostructures with diameters ranging from 60 to 180 nm started to melt at similar temperatures, viz. 890-898 K. These materials exhibited different LDI efficiencies, however, with Pd-NP materials being the most effective surface in our experiments. Pd nanostructures of diameters >400-800 nm started to melt at higher temperatures, >1000 K, making such targets more resistant to laser irradiation, with subsequent loss of LDI activity. Our data demonstrated that both melting of the surface structures and the presence of reagent ions were essential for efficient LDI of the investigated low molecular weight compounds. This dependence of LDI on melting points was exploited further to improve the performance of Pd-NP-based sampling targets. For example, adding sodium hypophosphite as reducing agent to Pd electrolyte solutions during synthesis lowered the melting points of the Pd-NP materials and subsequently gave reduced laser fluence requirements for LDI. Copyright © 2015 John Wiley & Sons, Ltd.
DOE Office of Scientific and Technical Information (OSTI.GOV)
Bazin, Alexandre; Monnier, Paul; Beaudoin, Grégoire
Ultrafast switching with low energies is demonstrated using InP photonic crystal nanocavities embedding InGaAs surface quantum wells heterogeneously integrated to a silicon on insulator waveguide circuitry. Thanks to the engineered enhancement of surface non radiative recombination of carriers, switching time is obtained to be as fast as 10 ps. These hybrid nanostructures are shown to be capable of achieving systems level performance by demonstrating error free wavelength conversion at 10 Gbit/s with 6 mW switching powers.
NASA Astrophysics Data System (ADS)
Ponomarenko, Sergey A.; Surin, Nikolay M.; Borshchev, Oleg V.; Skorotetcky, Maxim S.; Muzafarov, Aziz M.
2015-10-01
Nanostructured organosilicon luminophores (NOLs) are branched molecular structures having two types of covalently bonded via silicon atoms organic luminophores with efficient Förster energy transfer between them. They combine the best properties of organic luminophores and inorganic quantum dots: high absorption cross-section, excellent photoluminescence quantum yield, fast luminescence decay time, good processability and low toxicity. A smart choice of organic luminophores allowed us to design and synthesize a library of NOLs, absorbing from VUV to visible region and emitting at the desired wavelengths from 390 to 650 nm. They can be used as unique wavelength shifters in plastic scintillators and other applications.
Francioso, L; De Pascali, C; Capone, S; Siciliano, P
2012-03-09
The present research was motivated by the growing interest of the scientific community towards the understanding of basic gas-surface interaction mechanisms in 1D nanostructured metal oxide semiconductors, whose significantly enhanced chemical detection sensitivity is known. In this work, impedance spectroscopy (IS) was used to evaluate how a top-down patterning of the sensitive layer can modulate the electrical properties of a gas sensor based on a fully integrated nanometric array of TiO(2) polycrystalline strips. The aim of the study was supported by comparative experimental activity carried out on different thin film gas sensors based on identical TiO(2) polycrystalline sensitive thin films. The impedance responses of the investigated devices under dry air (as the reference environment) and ethanol vapors (as the target gas) were fitted by a complex nonlinear least-squares method using LEVM software, in order to find an appropriate equivalent circuit describing the main conduction processes involved in the gas/semiconductor interactions. Two different equivalent circuit models were identified as completely representative of the TiO(2) thin film and the TiO(2) nanostructure-based gas sensors, respectively. All the circuit parameters were quantified and the related standard deviations were evaluated. The simulated results well approximated the experimental data as indicated by the small mean errors of the fits (in the range of 10(-4)) and the small standard deviations of the circuit parameters. In addition to the substrate capacitance, three different contributions to the overall conduction mechanism were identified for both equivalent circuits: bulk conductivity, intergrain contact and semiconductor-electrode contact, electrically represented by an ideal resistor R(g), a parallel R(gb)C(gb) block and a parallel R(c)-CPE(c) combination, respectively. In terms of equivalent circuit modeling, the sensitive layer patterning introduced an additional parameter in parallel connection with the whole circuit block. Such a circuit element (an ideal inductor, L) has an average value of about 125 μH and exhibits no direct dependence on the analyte gas concentration. Its presence could be due to complex mutual inductance effects occurring both between all the adjacent nanostrips (10 µm spaced) and between the nanostrips and the n-type-doped silicon substrate underneath the thermal oxide (wire/plate effect), where a two order of magnitude higher magnetic permeability of silicon can give L values comparable with those estimated by the fitting procedure. Slightly modified experimental models confirmed that the theoretical background, regulating thin film devices based on metal oxide semiconductors, is also valid for nanopatterned devices.
NASA Astrophysics Data System (ADS)
Savkina, Rada; Smirnov, Aleksey; Kirilova, Svitlana; Shmid, Volodymyr; Podolian, Artem; Nadtochiy, Andriy; Odarych, Volodymyr; Korotchenkov, Oleg
2018-04-01
We present systematic studies of charge-carrier relaxation processes in sonochemically nanostructured silicon wafers. Impedance spectroscopy and transient photovoltage techniques are employed. It is found that interface potential in Si wafers remarkably increases upon their exposure to sonochemical treatments in Ca-rich environments. In contrast, the density of fast interface electron states remains almost unchanged. It is found that the initial photovoltage decay, taken before ultrasonic treatments, exhibits the involvement of shorter- and longer time recombination and trapping centers. The decay speeds up remarkably due to cavitation treatments, which is accompanied by a substantial quenching of the photovoltage magnitude. It is also found that, before the treatments, the photovoltage magnitude is markedly non-uniform over the wafer surface, implying the existence of distributed sites affecting distribution of photoexcited carriers. The treatments cause an overall broadening of the photovoltage distribution. Furthermore, impedance measurements monitor the progress in surface structuring relevant to several relaxation processes. We believe that sonochemical nanostructuring of silicon wafers with dendronized CaSiO3 may enable new promising avenue towards low-cost solar energy efficiency multilayered solar cell device structures.
Rapid and label-free detection of protein a by aptamer-tethered porous silicon nanostructures.
Urmann, Katharina; Reich, Peggy; Walter, Johanna-Gabriela; Beckmann, Dieter; Segal, Ester; Scheper, Thomas
2017-09-10
Protein A, which is secreted by and displayed on the cell membrane of Staphylococcus aureus is an important biomarker for S. aureus. Thus, its rapid and specific detection may facilitate the pathogen identification and initiation of proper treatment. Herein, we present a simple, label-free and rapid optical biosensor enabling specific detection of protein A. Protein A-binding aptamer serves as the capture probe and is immobilized onto a nanostructured porous silicon thin film, which serves as the optical transducer element. We demonstrate high sensitivity of the biosensor with a linear detection range between 8 and 23μM. The apparent dissociation constant was determined as 13.98μM and the LoD is 3.17μM. Harnessing the affinity between protein A and antibodies, a sandwich assay format was developed to amplify the optical signal associated with protein A capture by the aptamer. Using this approach, we increase the sensitivity of the biosensor, resulting in a three times lower LoD. Copyright © 2017 Elsevier B.V. All rights reserved.