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Sample records for silicon nitride

  1. Silicon nitride/silicon carbide composite powders

    DOEpatents

    Dunmead, Stephen D.; Weimer, Alan W.; Carroll, Daniel F.; Eisman, Glenn A.; Cochran, Gene A.; Susnitzky, David W.; Beaman, Donald R.; Nilsen, Kevin J.

    1996-06-11

    Prepare silicon nitride-silicon carbide composite powders by carbothermal reduction of crystalline silica powder, carbon powder and, optionally, crystalline silicon nitride powder. The crystalline silicon carbide portion of the composite powders has a mean number diameter less than about 700 nanometers and contains nitrogen. The composite powders may be used to prepare sintered ceramic bodies and self-reinforced silicon nitride ceramic bodies.

  2. Silicon nitride equation of state

    NASA Astrophysics Data System (ADS)

    Brown, Robert C.; Swaminathan, Pazhayannur K.

    2017-01-01

    This report presents the development of a global, multi-phase equation of state (EOS) for the ceramic silicon nitride (Si3N4).1 Structural forms include amorphous silicon nitride normally used as a thin film and three crystalline polymorphs. Crystalline phases include hexagonal α-Si3N4, hexagonal β-Si3N4, and the cubic spinel c-Si3N4. Decomposition at about 1900 °C results in a liquid silicon phase and gas phase products such as molecular nitrogen, atomic nitrogen, and atomic silicon. The silicon nitride EOS was developed using EOSPro which is a new and extended version of the PANDA II code. Both codes are valuable tools and have been used successfully for a variety of material classes. Both PANDA II and EOSPro can generate a tabular EOS that can be used in conjunction with hydrocodes. The paper describes the development efforts for the component solid phases and presents results obtained using the EOSPro phase transition model to investigate the solid-solid phase transitions in relation to the available shock data that have indicated a complex and slow time dependent phase change to the c-Si3N4 phase. Furthermore, the EOSPro mixture model is used to develop a model for the decomposition products; however, the need for a kinetic approach is suggested to combine with the single component solid models to simulate and further investigate the global phase coexistences.

  3. Silicon Nitride Equation of State

    NASA Astrophysics Data System (ADS)

    Swaminathan, Pazhayannur; Brown, Robert

    2015-06-01

    This report presents the development a global, multi-phase equation of state (EOS) for the ceramic silicon nitride (Si3N4) . Structural forms include amorphous silicon nitride normally used as a thin film and three crystalline polymorphs. Crystalline phases include hexagonal α-Si3N4, hexagonalβ-Si3N4, and the cubic spinel c-Si3N4. Decomposition at about 1900 °C results in a liquid silicon phase and gas phase products such as molecular nitrogen, atomic nitrogen, and atomic silicon. The silicon nitride EOS was developed using EOSPro which is a new and extended version of the PANDA II code. Both codes are valuable tools and have been used successfully for a variety of material classes. Both PANDA II and EOSPro can generate a tabular EOS that can be used in conjunction with hydrocodes. The paper describes the development efforts for the component solid phases and presents results obtained using the EOSPro phase transition model to investigate the solid-solid phase transitions in relation to the available shock data. Furthermore, the EOSPro mixture model is used to develop a model for the decomposition products and then combined with the single component solid models to study the global phase diagram. Sponsored by the NASA Goddard Space Flight Center Living With a Star program office.

  4. Method for producing silicon nitride/silicon carbide composite

    DOEpatents

    Dunmead, Stephen D.; Weimer, Alan W.; Carroll, Daniel F.; Eisman, Glenn A.; Cochran, Gene A.; Susnitzky, David W.; Beaman, Donald R.; Nilsen, Kevin J.

    1996-07-23

    Silicon carbide/silicon nitride composites are prepared by carbothermal reduction of crystalline silica powder, carbon powder and optionally crsytalline silicon nitride powder. The crystalline silicon carbide portion of the composite has a mean number diameter less than about 700 nanometers and contains nitrogen.

  5. Waveguide silicon nitride grating coupler

    NASA Astrophysics Data System (ADS)

    Litvik, Jan; Dolnak, Ivan; Dado, Milan

    2016-12-01

    Grating couplers are one of the most used elements for coupling of light between optical fibers and photonic integrated components. Silicon-on-insulator platform provides strong confinement of light and allows high integration. In this work, using simulations we have designed a broadband silicon nitride surface grating coupler. The Fourier-eigenmode expansion and finite difference time domain methods are utilized in design optimization of grating coupler structure. The fully, single etch step grating coupler is based on a standard silicon-on-insulator wafer with 0.55 μm waveguide Si3N4 layer. The optimized structure at 1550 nm wavelength yields a peak coupling efficiency -2.6635 dB (54.16%) with a 1-dB bandwidth up to 80 nm. It is promising way for low-cost fabrication using complementary metal-oxide- semiconductor fabrication process.

  6. Manufacture of sintered silicon nitrides

    NASA Technical Reports Server (NTRS)

    Iwai, T.

    1985-01-01

    Sintered silicon nitrides are manufactured by sintering Si3N powder containing 2 to 15% in wt of a powder mixture composed of nitride powder of lanthanide or Y 100 parts and AIN powder less than 100 parts at 1500 to 1900 deg. temperature under a pressure of less than 200 Kg/sq. cm. The sintered Si3N has high mechanical strength in high temperature. Thus, Si3N4 93.0, Y 5.0 and AlN 2.0% in weight were wet mixed in acetone in N atom, molded and sintered at 1750 deg. and 1000 Kg/sq. cm. to give a sintered body having high hardness.

  7. Colloidal characterization of ultrafine silicon carbide and silicon nitride powders

    NASA Technical Reports Server (NTRS)

    Whitman, Pamela K.; Feke, Donald L.

    1986-01-01

    The effects of various powder treatment strategies on the colloid chemistry of aqueous dispersions of silicon carbide and silicon nitride are examined using a surface titration methodology. Pretreatments are used to differentiate between the true surface chemistry of the powders and artifacts resulting from exposure history. Silicon nitride powders require more extensive pretreatment to reveal consistent surface chemistry than do silicon carbide powders. As measured by titration, the degree of proton adsorption from the suspending fluid by pretreated silicon nitride and silicon carbide powders can both be made similar to that of silica.

  8. Fatigue life of silicon nitride balls

    SciTech Connect

    Galbato, A.T.; Cundill, R.T.; Harris, T.A. SKF Engineering and Research Center, Nieuwegein Pennsylvania State Univ., University Park )

    1992-11-01

    Because its specific weight is 40 percent that of steel, silicon nitride has been considered as a rolling element material in very high speed ball and roller bearings. Furthermore, similar to steel components, hot pressed silicon nitride rolling components, when properly manufactured, have demonstrated the capacity to fail in a non-catastrophic manner, i.e., fatigue of the rolling contact surfaces. In this investigation, hot isostatically-pressed silicon nitride balls were endurance-tested using a NASA 5-ball rig and the results were compared against similarly tested VIMVAR M50 balls. The silicon nitride balls demonstrated fatigue lives many times those obtained for the M50 balls. Therefore it is concluded that silicon nitride can be effectively employed in applications where steel rolling element life has previously proved to be a limiting factor. 12 refs.

  9. Bond Angles in the Crystalline Silicon/Silicon Nitride Interface

    NASA Astrophysics Data System (ADS)

    Leonard, Robert H.; Bachlechner, Martina E.

    2006-03-01

    Silicon nitride deposited on a silicon substrate has major applications in both dielectric layers in microelectronics and as antireflection and passivation coatings in photovoltaic applications. Molecular dynamic simulations are performed to investigate the influence of temperature and rate of externally applied strain on the structural and mechanical properties of the silicon/silicon nitride interface. Bond-angles between various atom types in the system are used to find and understand more about the mechanisms leading to the failure of the crystal. Ideally in crystalline silicon nitride, bond angles of 109.5 occur when a silicon atom is at the vertex and 120 angles occur when a nitrogen atom is at the vertex. The comparison of the calculated angles to the ideal values give information on the mechanisms of failure in silicon/silicon nitride system.

  10. Pair distribution functions of silicon/silicon nitride interfaces

    NASA Astrophysics Data System (ADS)

    Cao, Deng; Bachlechner, Martina E.

    2006-03-01

    Using molecular dynamics simulations, we investigate different mechanical and structural properties of the silicon/silicon nitride interface. One way to characterize the structure as tensile strain is applied parallel to the interface is to calculate pair distribution functions for specific atom types. The pair distribution function gives the probability of finding a pair of atoms a distance r apart, relative to the probability expected for a completely random distribution at the same density. The pair distribution functions for bulk silicon nitride reflect the fracture of the silicon nitride film at about 8 % and the fact that the centerpiece of the silicon nitride film returns to its original structure after fracture. The pair distribution functions for interface silicon atoms reveal the formation of bonds for originally unbound atom pairs, which is indicative of the interstitial-vacancy defect that causes failure in silicon.

  11. Dissolution of bulk specimens of silicon nitride

    NASA Technical Reports Server (NTRS)

    Davis, W. F.; Merkle, E. J.

    1981-01-01

    An accurate chemical characterization of silicon nitride has become important in connection with current efforts to incorporate components of this material into advanced heat engines. However, there are problems concerning a chemical analysis of bulk silicon nitride. Current analytical methods require the pulverization of bulk specimens. A pulverization procedure making use of grinding media, on the other hand, will introduce contaminants. A description is given of a dissolution procedure which overcomes these difficulties. It has been found that up to at least 0.6 g solid pieces of various samples of hot pressed and reaction bonded silicon nitride can be decomposed in a mixture of 3 mL hydrofluoric acid and 1 mL nitric acid overnight at 150 C in a Parr bomb. High-purity silicon nitride is completely soluble in nitric acid after treatment in the bomb. Following decomposition, silicon and hydrofluoric acid are volatilized and insoluble fluorides are converted to a soluble form.

  12. Silicon Nitride Membranes for Filtration and Separation

    SciTech Connect

    Galambos, Paul; Zavadil, Kevin; Shul, Randy; Willison, Christi Gober; Miller, Sam

    1999-07-19

    Semi-Permeable silicon nitride membranes have been developed using a Bosch etch process followed by a reactive ion etch (NE) process. These membranes were observed to allow air but not water to pass through them into surface micromachined, silicon nitride microfluidic channels. Membranes with this property have potential use in microfluidic systems as gas bubble traps and vents, filters to remove particles and gas partitioning membranes. Membrane permeation was measured as 1.6 x 10{sup {minus}8} mol/m{sup 2}Pa s of helium for inline membranes at the entrance and exit of the silicon nitride microfluidic channels.

  13. Transparent polycrystalline cubic silicon nitride.

    PubMed

    Nishiyama, Norimasa; Ishikawa, Ryo; Ohfuji, Hiroaki; Marquardt, Hauke; Kurnosov, Alexander; Taniguchi, Takashi; Kim, Byung-Nam; Yoshida, Hidehiro; Masuno, Atsunobu; Bednarcik, Jozef; Kulik, Eleonora; Ikuhara, Yuichi; Wakai, Fumihiro; Irifune, Tetsuo

    2017-03-17

    Glasses and single crystals have traditionally been used as optical windows. Recently, there has been a high demand for harder and tougher optical windows that are able to endure severe conditions. Transparent polycrystalline ceramics can fulfill this demand because of their superior mechanical properties. It is known that polycrystalline ceramics with a spinel structure in compositions of MgAl2O4 and aluminum oxynitride (γ-AlON) show high optical transparency. Here we report the synthesis of the hardest transparent spinel ceramic, i.e. polycrystalline cubic silicon nitride (c-Si3N4). This material shows an intrinsic optical transparency over a wide range of wavelengths below its band-gap energy (258 nm) and is categorized as one of the third hardest materials next to diamond and cubic boron nitride (cBN). Since the high temperature metastability of c-Si3N4 in air is superior to those of diamond and cBN, the transparent c-Si3N4 ceramic can potentially be used as a window under extremely severe conditions.

  14. Transparent polycrystalline cubic silicon nitride

    NASA Astrophysics Data System (ADS)

    Nishiyama, Norimasa; Ishikawa, Ryo; Ohfuji, Hiroaki; Marquardt, Hauke; Kurnosov, Alexander; Taniguchi, Takashi; Kim, Byung-Nam; Yoshida, Hidehiro; Masuno, Atsunobu; Bednarcik, Jozef; Kulik, Eleonora; Ikuhara, Yuichi; Wakai, Fumihiro; Irifune, Tetsuo

    2017-03-01

    Glasses and single crystals have traditionally been used as optical windows. Recently, there has been a high demand for harder and tougher optical windows that are able to endure severe conditions. Transparent polycrystalline ceramics can fulfill this demand because of their superior mechanical properties. It is known that polycrystalline ceramics with a spinel structure in compositions of MgAl2O4 and aluminum oxynitride (γ-AlON) show high optical transparency. Here we report the synthesis of the hardest transparent spinel ceramic, i.e. polycrystalline cubic silicon nitride (c-Si3N4). This material shows an intrinsic optical transparency over a wide range of wavelengths below its band-gap energy (258 nm) and is categorized as one of the third hardest materials next to diamond and cubic boron nitride (cBN). Since the high temperature metastability of c-Si3N4 in air is superior to those of diamond and cBN, the transparent c-Si3N4 ceramic can potentially be used as a window under extremely severe conditions.

  15. Transparent polycrystalline cubic silicon nitride

    PubMed Central

    Nishiyama, Norimasa; Ishikawa, Ryo; Ohfuji, Hiroaki; Marquardt, Hauke; Kurnosov, Alexander; Taniguchi, Takashi; Kim, Byung-Nam; Yoshida, Hidehiro; Masuno, Atsunobu; Bednarcik, Jozef; Kulik, Eleonora; Ikuhara, Yuichi; Wakai, Fumihiro; Irifune, Tetsuo

    2017-01-01

    Glasses and single crystals have traditionally been used as optical windows. Recently, there has been a high demand for harder and tougher optical windows that are able to endure severe conditions. Transparent polycrystalline ceramics can fulfill this demand because of their superior mechanical properties. It is known that polycrystalline ceramics with a spinel structure in compositions of MgAl2O4 and aluminum oxynitride (γ-AlON) show high optical transparency. Here we report the synthesis of the hardest transparent spinel ceramic, i.e. polycrystalline cubic silicon nitride (c-Si3N4). This material shows an intrinsic optical transparency over a wide range of wavelengths below its band-gap energy (258 nm) and is categorized as one of the third hardest materials next to diamond and cubic boron nitride (cBN). Since the high temperature metastability of c-Si3N4 in air is superior to those of diamond and cBN, the transparent c-Si3N4 ceramic can potentially be used as a window under extremely severe conditions. PMID:28303948

  16. Silicon nitride reinforced with molybdenum disilicide

    DOEpatents

    Petrovic, John J.; Honnell, Richard E.

    1991-01-01

    Compositions of matter comprised of silicon nitride and molybdenum disilicide and methods of making the compositions, where the molybdenum disilicide is present in amounts ranging from about 5 to about 50 vol. %.

  17. Silicon nitride reinforced with molybdenum disilicide

    SciTech Connect

    Petrovic, J.J.; Honnell, R.E.

    1990-12-31

    Compositions of matter comprised of silicon nitride and molybdenum disilicide and methods of making the compositions, where the molybdenum disilicide is present in amounts ranging from about 5 to about 50 vol%.

  18. Highly porous silicon membranes fabricated from silicon nitride/silicon stacks.

    PubMed

    Qi, Chengzhu; Striemer, Christopher C; Gaborski, Thomas R; McGrath, James L; Fauchet, Philippe M

    2014-07-23

    Nanopore formation in silicon films has previously been demonstrated using rapid thermal crystallization of ultrathin (15 nm) amorphous Si films sandwiched between nm-thick SiO2 layers. In this work, the silicon dioxide barrier layers are replaced with silicon nitride, resulting in nanoporous silicon films with unprecedented pore density and novel morphology. Four different thin film stack systems including silicon nitride/silicon/silicon nitride (NSN), silicon dioxide/silicon/silicon nitride (OSN), silicon nitride/silicon/silicon dioxide (NSO), and silicon dioxide/silicon/silicon dioxide (OSO) are tested under different annealing temperatures. Generally the pore size, pore density, and porosity positively correlate with the annealing temperature for all four systems. The NSN system yields substantially higher porosity and pore density than the OSO system, with the OSN and NSO stack characteristics fallings between these extremes. The higher porosity of the Si membrane in the NSN stack is primarily due to the pore formation enhancement in the Si film. It is hypothesized that this could result from the interfacial energy difference between the silicon/silicon nitride and silicon/silicon dioxide, which influences the Si crystallization process.

  19. Silicon nitride ceramic having high fatigue life and high toughness

    DOEpatents

    Yeckley, Russell L.

    1996-01-01

    A sintered silicon nitride ceramic comprising between about 0.6 mol % and about 3.2 mol % rare earth as rare earth oxide, and between about 85 w/o and about 95 w/o beta silicon nitride grains, wherein at least about 20% of the beta silicon nitride grains have a thickness of greater than about 1 micron.

  20. Method and apparatus for stable silicon dioxide layers on silicon grown in silicon nitride ambient

    NASA Technical Reports Server (NTRS)

    Cohen, R. A.; Wheeler, R. K. (Inventor)

    1974-01-01

    A method and apparatus for thermally growing stable silicon dioxide layers on silicon is disclosed. A previously etched and baked silicon nitride tube placed in a furnace is used to grow the silicon dioxide. First, pure oxygen is allowed to flow through the tube to initially coat the inside surface of the tube with a thin layer of silicon dioxide. After the tube is coated with the thin layer of silicon dioxide, the silicon is oxidized thermally in a normal fashion. If the tube becomes contaminated, the silicon dioxide is etched off thereby exposing clean silicon nitride and then the inside of the tube is recoated with silicon dioxide. As is disclosed, the silicon nitride tube can also be used as the ambient for the pyrolytic decomposition of silane and ammonia to form thin layers of clean silicon nitride.

  1. Silicon nitride/silicon carbide composite densified materials prepared using composite powders

    DOEpatents

    Dunmead, S.D.; Weimer, A.W.; Carroll, D.F.; Eisman, G.A.; Cochran, G.A.; Susnitzky, D.W.; Beaman, D.R.; Nilsen, K.J.

    1997-07-01

    Prepare silicon nitride-silicon carbide composite powders by carbothermal reduction of crystalline silica powder, carbon powder and, optionally, crystalline silicon nitride powder. The crystalline silicon carbide portion of the composite powders has a mean number diameter less than about 700 nanometers and contains nitrogen. The composite powders may be used to prepare sintered ceramic bodies and self-reinforced silicon nitride ceramic bodies.

  2. Infrared bolometers with silicon nitride micromesh absorbers

    NASA Technical Reports Server (NTRS)

    Bock, J. J.; Turner, A. D.; DelCastillo, H. M.; Beeman, J. W.; Lange, A. E.; Mauskopf, P. D.

    1996-01-01

    Sensitive far infrared and millimeter wave bolometers fabricated from a freestanding membrane of low stress silicon nitride are reported. The absorber, consisting of a metallized silicon nitride micromesh thermally isolated by radial legs of silicon nitride, is placed in an integrating cavity to efficiently couple to single mode or multiple mode infrared radiation. This structure provides low heat capacity, low thermal conduction and minimal cross section to energetic particles. A neutron transmutation doped Ge thermister is bump bonded to the center of the device and read out with evaporated Cr-Au leads. The limiting performance of the micromesh absorber is discussed and the recent results obtained from a 300 mK cold stage are summarized.

  3. Evaluation of silicon-nitride ceramic valves.

    SciTech Connect

    Sun, J. G.; Zhang, J. M.; Andrews, M. J.; Tretheway, J. S.; Phillips, N. S .L.; Jensen, J. A.; Nuclear Engineering Division; Univ. of Texas; Caterpillar, Inc.

    2008-01-01

    Silicon-nitride ceramic valves can improve the performance of both light- and heavy-duty automotive engines because of the superior material properties of silicon nitrides over current metal alloys. However, ceramics are brittle materials that may introduce uncertainties in the reliability and durability of ceramic valves. As a result, the lifetime of ceramic valves are difficult to predict theoretically due to wide variations in the type and distribution of microstructural flaws in the material. Nondestructive evaluation (NDE) methods are therefore required to assess the quality and reliability of these valves. Because ceramic materials are optically translucent and the strength-limiting flaws are normally located near the valve surface, a laser-scatter method can be used for NDE evaluation of ceramic valves. This paper reviews the progress in the development of this NDE method and its application to inspect silicon-nitride ceramic valves at various stages of manufacturing and bench and engine tests.

  4. Silicon-nitride and metal composite

    DOEpatents

    Landingham, Richard L.; Huffsmith, Sarah A.

    1981-01-01

    A composite and a method for bonding the composite. The composite includes a ceramic portion of silicon nitride, a refractory metal portion and a layer of MoSi.sub.2 indirectly bonding the composite together. The method includes contacting the layer of MoSi.sub.2 with a surface of the silicon nitride and with a surface of the metal; heating the layer to a temperature below 1400.degree. C.; and, simultaneously with the heating, compressing the layer such that the contacting is with a pressure of at least 30 MPa. This composite overcomes useful life problems in the fabrication of parts for a helical expander for use in power generation.

  5. Silicon-nitride and metal composite

    DOEpatents

    Landingham, R.L.; Huffsmith, S.A.

    A composite and a method for bonding the composite are described. The composite includes a ceramic portion of silicon nitride, a refractory metal portion and a layer of MoSi/sub 2/ indirectly bonding the composite together. The method includes contacting the layer of MoSi/sub 2/ with a surface of the silicon nitride and with a surface of the metal; heating the layer to a temperature below 1400/sup 0/C; and, simultaneously, compressing the layer such that the contacting is with a pressure of at least 30 MPa. This composite overcomes useful life problems in the fabrication of parts for a helical expander for use in power generation.

  6. Wetting and infiltration of nitride bonded silicon nitride by liquid silicon

    NASA Astrophysics Data System (ADS)

    Schneider, V.; Reimann, C.; Friedrich, J.

    2016-04-01

    Nitride bonded silicon nitride (NBSN) is a promising crucible material for the repeated use in the directional solidification of multicrystalline (mc) silicon ingots for photovoltaic applications. Due to wetting and infiltration, however, silicon nitride in its initial state does not offer the desired reusability. In this work the sessile drop method is used to systematically study the wetting and infiltration behavior of NBSN after applying different oxidation procedures. It is found that the wetting of the NBSN crucible by liquid silicon can be prevented by the oxidation of the geometrical surface. The infiltration of liquid silicon into the porous crucible can be suppressed by oxygen enrichment within the volume of the NBSN, i.e. at the pore walls of the crucibles. The realized reusability of the NBSN is demonstrated by reusing a NBSN crucible six times for the directional solidification of undoped multicrystalline silicon ingots.

  7. Use of silicon in liquid sintered silicon nitrides and sialons

    DOEpatents

    Raj, R.; Baik, S.

    1984-12-11

    This invention relates to the production of improved high density nitrogen based ceramics by liquid-phase densification of silicon nitride or a compound of silicon-nitrogen-oxygen-metal, e.g. a sialon. In the process and compositions of the invention minor amounts of finely divided silicon are employed together with the conventional liquid phase producing additives to enhance the densification of the resultant ceramic. 4 figs.

  8. Use of silicon in liquid sintered silicon nitrides and sialons

    DOEpatents

    Raj, Rishi; Baik, Sunggi

    1984-12-11

    This invention relates to the production of improved high density nitrogen based ceramics by liquid-phase densification of silicon nitride or a compound of silicon-nitrogen-oxygen-metal, e.g. a sialon. In the process and compositions of the invention minor amounts of finely divided silicon are employed together with the conventional liquid phase producing additives to enhance the densification of the resultant ceramic.

  9. Slip casting and nitridation of silicon powder

    NASA Astrophysics Data System (ADS)

    Seiko, Y.

    1985-03-01

    Powdered Silicon was slip-cast with a CaSO4 x 0.5H2O mold and nitrided in a N atm. containing 0 or 5 vol. % H at 1000 to 1420 deg. To remove the castings, the modeling faces were coated successively with an aq. salt soap and powdered cellulose containing Na alginate, and thus prevented the sticking problem.

  10. Improved "Green" Forming Of Silicon Nitride

    NASA Technical Reports Server (NTRS)

    Freedman, Marc R.; Sanders, William A.; Kiser, James D.

    1988-01-01

    Advanced processing techniques reduce incidence of critical flaws. Critical flaws reduced by processing of powders to avoid organic and metallic contamination and combination of colloidal techniques with innovative slurry-pressing technique avoiding agglomeration. Silicon nitride considered for many applications ranging from components of turbine engines to industrial heat exchangers.

  11. Slip casting and nitridation of silicon powder

    NASA Technical Reports Server (NTRS)

    Seiko, Y.

    1985-01-01

    Powdered Silicon was slip-cast with a CaSO4 x 0.5H2O mold and nitrided in a N atm. containing 0 or 5 vol. % H at 1000 to 1420 deg. To remove the castings, the modeling faces were coated successively with an aq. salt soap and powdered cellulose containing Na alginate, and thus prevented the sticking problem.

  12. Silicon nitride having a high tensile strength

    DOEpatents

    Pujari, V.K.; Tracey, D.M.; Foley, M.R.; Paille, N.I.; Pelletier, P.J.; Sales, L.C.; Willkens, C.A.; Yeckley, R.L.

    1996-11-05

    A silicon nitride ceramic is disclosed comprising: (a) inclusions no greater than 25 microns in length, (b) agglomerates no greater than 20 microns in diameter, and (c) a surface finish of less than about 8 microinches, said ceramic having a four-point flexural strength of at least about 900 MPa. 4 figs.

  13. Silicon nitride having a high tensile strength

    DOEpatents

    Pujari, Vimal K.; Tracey, Dennis M.; Foley, Michael R.; Paille, Norman I.; Pelletier, Paul J.; Sales, Lenny C.; Willkens, Craig A.; Yeckley, Russell L.

    1996-01-01

    A silicon nitride ceramic comprising: a) inclusions no greater than 25 microns in length, b) agglomerates no greater than 20 microns in diameter, and c) a surface finish of less than about 8 microinches, said ceramic having a four-point flexural strength of at least about 900 MPa.

  14. Colloidal characterization of silicon nitride and silicon carbide

    NASA Technical Reports Server (NTRS)

    Feke, Donald L.

    1986-01-01

    The colloidal behavior of aqueous ceramic slips strongly affects the forming and sintering behavior and the ultimate mechanical strength of the final ceramic product. The colloidal behavior of these materials, which is dominated by electrical interactions between the particles, is complex due to the strong interaction of the solids with the processing fluids. A surface titration methodology, modified to account for this interaction, was developed and used to provide fundamental insights into the interfacial chemistry of these systems. Various powder pretreatment strategies were explored to differentiate between true surface chemistry and artifacts due to exposure history. The colloidal behavior of both silicon nitride and carbide is dominated by silanol groups on the powder surfaces. However, the colloid chemistry of silicon nitride is apparently influenced by an additional amine group. With the proper powder treatments, silicon nitride and carbide powder can be made to appear colloidally equivalent. The impact of these results on processing control will be discussed.

  15. Photoluminescence and electrical properties of silicon oxide and silicon nitride superlattices containing silicon nanocrystals

    NASA Astrophysics Data System (ADS)

    Shuleiko, D. V.; Ilin, A. S.

    2016-08-01

    Photoluminescence and electrical properties of superlattices with thin (1 to 5 nm) alternating silicon-rich silicon oxide or silicon-rich silicon nitride, and silicon oxide or silicon nitride layers containing silicon nanocrystals prepared by plasma-enhanced chemical vapor deposition with subsequent annealing were investigated. The entirely silicon oxide based superlattices demonstrated photoluminescence peak shift due to quantum confinement effect. Electrical measurements showed the hysteresis effect in the vicinity of zero voltage due to structural features of the superlattices from SiOa93/Si3N4 and SiN0.8/Si3N4 layers. The entirely silicon nitride based samples demonstrated resistive switching effect, comprising an abrupt conductivity change at about 5 to 6 V with current-voltage characteristic hysteresis. The samples also demonstrated efficient photoluminescence with maximum at ∼1.4 eV, due to exiton recombination in silicon nanocrystals.

  16. Integrated silicon and silicon nitride photonic circuits on flexible substrates.

    PubMed

    Chen, Yu; Li, Mo

    2014-06-15

    Flexible integrated photonic devices based on crystalline materials on plastic substrates have a promising potential in many unconventional applications. In this Letter, we demonstrate a fully integrated photonic system including ring resonators and grating couplers, based on both crystalline silicon and silicon nitride, on flexible plastic substrate by using the stamping-transfer method. A high yield has been achieved by a simple, yet reliable transfer method without significant performance degradation.

  17. Corrosion Characteristics of Silicon Carbide and Silicon Nitride

    PubMed Central

    Munro, R. G.; Dapkunas, S. J.

    1993-01-01

    The present work is a review of the substantial effort that has been made to measure and understand the effects of corrosion with respect to the properties, performance, and durability of various forms of silicon carbide and silicon nitride. The review encompasses corrosion in diverse environments, usually at temperatures of 1000 °C or higher. The environments include dry and moist oxygen, mixtures of hot gaseous vapors, molten salts, molten metals, and complex environments pertaining to coal ashes and slags. PMID:28053489

  18. Molybdenum enhanced low-temperature deposition of crystalline silicon nitride

    DOEpatents

    Lowden, Richard A.

    1994-01-01

    A process for chemical vapor deposition of crystalline silicon nitride which comprises the steps of: introducing a mixture of a silicon source, a molybdenum source, a nitrogen source, and a hydrogen source into a vessel containing a suitable substrate; and thermally decomposing the mixture to deposit onto the substrate a coating comprising crystalline silicon nitride containing a dispersion of molybdenum silicide.

  19. Silicon nitride grating waveguide based directional coupler

    NASA Astrophysics Data System (ADS)

    Feng, Jijun; Li, Anyuan; Akimoto, Ryoichi; Zeng, Heping

    2016-10-01

    Silicon nitride is a promising wave-guiding material for integrated photonics applications with a wide transparency bandwidth from visible to mid-infrared, with a superior performance in fiber-coupling and propagation losses, more tolerant fabrication process to the structure parameters variation and compatible with the CMOS technology. Directional coupler (DC) is very popular for realizing beam splitter because of its structural simplicity and no excess loss intrinsically. Here, a conventional silicon nitride directional coupler, three-dimensional vertical coupler, and grating waveguide assisted coupler are designed and fabricated, and compared with each other. A grating waveguide based coupler with a period of 300 nm and coupling length of 26 um, can realize a wideband 3-dB splitter for the wavelength in the range from 1540 to 1620 nm, for a transverse electric (TE) polarized wave. With further optimization of the grating period and duty cycle, the device performance can be further improved with a wider bandwidth.

  20. Quantum electromechanics on silicon nitride nanomembranes

    NASA Astrophysics Data System (ADS)

    Fink, J. M.; Kalaee, M.; Pitanti, A.; Norte, R.; Heinzle, L.; Davanço, M.; Srinivasan, K.; Painter, O.

    2016-08-01

    Radiation pressure has recently been used to effectively couple the quantum motion of mechanical elements to the fields of optical or microwave light. Integration of all three degrees of freedom--mechanical, optical and microwave--would enable a quantum interconnect between microwave and optical quantum systems. We present a platform based on silicon nitride nanomembranes for integrating superconducting microwave circuits with planar acoustic and optical devices such as phononic and photonic crystals. Using planar capacitors with vacuum gaps of 60 nm and spiral inductor coils of micron pitch we realize microwave resonant circuits with large electromechanical coupling to planar acoustic structures of nanoscale dimensions and femtoFarad motional capacitance. Using this enhanced coupling, we demonstrate microwave backaction cooling of the 4.48 MHz mechanical resonance of a nanobeam to an occupancy as low as 0.32. These results indicate the viability of silicon nitride nanomembranes as an all-in-one substrate for quantum electro-opto-mechanical experiments.

  1. Silicon Nitride Balls For Cryogenic Bearings

    NASA Technical Reports Server (NTRS)

    Butner, Myles F.; Ng, Lillian W.

    1990-01-01

    Resistance to wear greater than that of 440C steel. Experiments show lives of ball bearings immersed in liquid nitrogen or liquid oxygen increased significantly when 440C steel balls (running on 440C steel races) replaced by balls of silicon nitride. Developed for use at high temperatures, where lubrication poor or nonexistent. Best wear life of any bearing tested to date and ball material spalls without fracturing. Plans for future tests call for use of liquid oxygen as working fluid.

  2. Silicon Nitride Antireflection Coatings for Photovoltaic Cells

    NASA Technical Reports Server (NTRS)

    Johnson, C.; Wydeven, T.; Donohoe, K.

    1984-01-01

    Chemical-vapor deposition adapted to yield graded index of refraction. Silicon nitride deposited in layers, refractive index of which decreases with distance away from cell/coating interface. Changing index of refraction allows adjustment of spectral transmittance for wavelengths which cell is most effective at converting light to electric current. Average conversion efficiency of solar cells increased from 8.84 percent to 12.63 percent.

  3. Method for silicon nitride precursor solids recovery

    DOEpatents

    Crosbie, Gary M.; Predmesky, Ronald L.; Nicholson, John M.

    1992-12-15

    Method and apparatus are provided for collecting reaction product solids entrained in a gaseous outflow from a reaction situs, wherein the gaseous outflow includes a condensable vapor. A condensate is formed of the condensable vapor on static mixer surfaces within a static mixer heat exchanger. The entrained reaction product solids are captured in the condensate which can be collected for further processing, such as return to the reaction situs. In production of silicon imide, optionally integrated into a production process for making silicon nitride caramic, wherein reactant feed gas comprising silicon halide and substantially inert carrier gas is reacted with liquid ammonia in a reaction vessel, silicon imide reaction product solids entrained in a gaseous outflow comprising residual carrier gas and vaporized ammonia can be captured by forming a condensate of the ammonia vapor on static mixer surfaces of a static mixer heat exchanger.

  4. Apparatus for silicon nitride precursor solids recovery

    DOEpatents

    Crosbie, Gary M.; Predmesky, Ronald L.; Nicholson, John M.

    1995-04-04

    Method and apparatus are provided for collecting reaction product solids entrained in a gaseous outflow from a reaction situs, wherein the gaseous outflow includes a condensable vapor. A condensate is formed of the condensable vapor on static mixer surfaces within a static mixer heat exchanger. The entrained reaction product solids are captured in the condensate which can be collected for further processing, such as return to the reaction situs. In production of silicon imide, optionally integrated into a production process for making silicon nitride caramic, wherein reactant feed gas comprising silicon halide and substantially inert carrier gas is reacted with liquid ammonia in a reaction vessel, silicon imide reaction product solids entrained in a gaseous outflow comprising residual carrier gas and vaporized ammonia can be captured by forming a condensate of the ammonia vapor on static mixer surfaces of a static mixer heat exchanger.

  5. Vertical integration of high-Q silicon nitride microresonators into silicon-on-insulator platform.

    PubMed

    Li, Qing; Eftekhar, Ali A; Sodagar, Majid; Xia, Zhixuan; Atabaki, Amir H; Adibi, Ali

    2013-07-29

    We demonstrate a vertical integration of high-Q silicon nitride microresonators into the silicon-on-insulator platform for applications at the telecommunication wavelengths. Low-loss silicon nitride films with a thickness of 400 nm are successfully grown, enabling compact silicon nitride microresonators with ultra-high intrinsic Qs (~ 6 × 10(6) for 60 μm radius and ~ 2 × 10(7) for 240 μm radius). The coupling between the silicon nitride microresonator and the underneath silicon waveguide is based on evanescent coupling with silicon dioxide as buffer. Selective coupling to a desired radial mode of the silicon nitride microresonator is also achievable using a pulley coupling scheme. In this work, a 60-μm-radius silicon nitride microresonator has been successfully integrated into the silicon-on-insulator platform, showing a single-mode operation with an intrinsic Q of 2 × 10(6).

  6. The Effect of Polymer Char on Nitridation Kinetics of Silicon

    NASA Technical Reports Server (NTRS)

    Chan, Rickmond C.; Bhatt, Ramakrishna T.

    1994-01-01

    Effects of polymer char on nitridation kinetics of attrition milled silicon powder have been investigated from 1200 to 1350 C. Results indicate that at and above 1250 C, the silicon compacts containing 3.5 wt percent polymer char were fully converted to Si3N4 after 24 hr exposure in nitrogen. In contrast, the silicon compacts without polymer char could not be fully converted to Si3N4 at 1350 C under similar exposure conditions. At 1250 and 1350 C, the silicon compacts with polymer char showed faster nitridation kinetics than those without the polymer char. As the polymer char content is increased, the amount of SiC in the nitrided material is also increased. By adding small amounts (approx. 2.5 wt percent) of NiO, the silicon compacts containing polymer char can be completely nitrided at 1200 C. The probable mechanism for the accelerated nitridation of silicon containing polymer char is discussed.

  7. Process for producing amorphous and crystalline silicon nitride

    DOEpatents

    Morgan, Peter E. D.; Pugar, Eloise A.

    1985-01-01

    A process for producing amorphous or crystalline silicon nitride is disclosed which comprises reacting silicon disulfide ammonia gas at elevated temperature. In a preferred embodiment silicon disulfide in the form of "whiskers" or needles is heated at temperature ranging from about 900.degree. C. to about 1200.degree. C. to produce silicon nitride which retains the whisker or needle morphological characteristics of the silicon disulfide. Silicon carbide, e.g. in the form of whiskers, also can be prepared by reacting substituted ammonia, e.g. methylamine, or a hydrocarbon containing active hydrogen-containing groups, such as ethylene, with silicon disulfide, at elevated temperature, e.g. 900.degree. C.

  8. Process for producing amorphous and crystalline silicon nitride

    DOEpatents

    Morgan, P.E.D.; Pugar, E.A.

    1985-11-12

    A process for producing amorphous or crystalline silicon nitride is disclosed which comprises reacting silicon disulfide ammonia gas at elevated temperature. In a preferred embodiment silicon disulfide in the form of whiskers'' or needles is heated at temperature ranging from about 900 C to about 1,200 C to produce silicon nitride which retains the whisker or needle morphological characteristics of the silicon disulfide. Silicon carbide, e.g. in the form of whiskers, also can be prepared by reacting substituted ammonia, e.g. methylamine, or a hydrocarbon containing active hydrogen-containing groups, such as ethylene, with silicon disulfide, at elevated temperature, e.g. 900 C. 6 figs.

  9. Chemical profiling of silicon nitride structures

    NASA Technical Reports Server (NTRS)

    Vasquez, R. P.

    1989-01-01

    X ray photoelectron spectroscopy (XPS), spectroscopic ellipsometry (SE), and scanning electron microscopy (SEM) were used to study structural and chemical inhomogeneities in several electronic materials and device structures of relevance to radiation hard electronics. The systems studied include metal nitride oxide semiconductor (MNOS) structures, silicon oxynitride (SiO(x)N(y)) formed by the thermal nitridation of SiO2, and semiconductor on insulator (SOI) structures. Studies of MNOS structures suggest that the effect of H2 annealing is to make the Si3N4/SiO2 interface less abrupt by causing interdiffusion of silanol and silamine groups with subsequent oxynitride formation. Another effect of the annealing appears to be to relieve the strain at the SiO2/Si interface.

  10. Mechanical and tribological behavior of silicon nitride and silicon carbon nitride coatings for total joint replacements.

    PubMed

    Pettersson, M; Tkachenko, S; Schmidt, S; Berlind, T; Jacobson, S; Hultman, L; Engqvist, H; Persson, C

    2013-09-01

    Total joint replacements currently have relatively high success rates at 10-15 years; however, increasing ageing and an active population places higher demands on the longevity of the implants. A wear resistant configuration with wear particles that resorb in vivo can potentially increase the lifetime of an implant. In this study, silicon nitride (SixNy) and silicon carbon nitride (SixCyNz) coatings were produced for this purpose using reactive high power impulse magnetron sputtering (HiPIMS). The coatings are intended for hard bearing surfaces on implants. Hardness and elastic modulus of the coatings were evaluated by nanoindentation, cohesive, and adhesive properties were assessed by micro-scratching and the tribological performance was investigated in a ball-on-disc setup run in a serum solution. The majority of the SixNy coatings showed a hardness close to that of sintered silicon nitride (~18 GPa), and an elastic modulus close to that of cobalt chromium (~200 GPa). Furthermore, all except one of the SixNy coatings offered a wear resistance similar to that of bulk silicon nitride and significantly higher than that of cobalt chromium. In contrast, the SixCyNz coatings did not show as high level of wear resistance.

  11. Phonon-coupled trap-assisted charge injection in metal-nitride-oxide-silicon/silicon-oxide-nitride-oxide-silicon structures

    NASA Astrophysics Data System (ADS)

    Nasyrov, K. A.; Shaimeev, S. S.; Gritsenko, V. A.; Han, J. H.

    2009-06-01

    A phonon-coupled trap model is proposed for trap-assisted injection mechanism in silicon-oxide-nitride-oxide-silicon (SONOS)/metal-nitride-oxide-silicon (MNOS) structures at low voltages. On the basis of this model, a theory of charge injection in SONOS/MNOS has been developed. Charge injection experimental data was fitted by this theory. Obtained trap parameters are close to those previously reported [K. A. Nasyrov et al., J. Appl. Phys. 96, 4293 (2004)], where the current dependence on temperature and electric field was investigated in MNOS.

  12. Cell culture on hydrophilicity-controlled silicon nitride surfaces.

    PubMed

    Masuda, Yuriko; Inami, Wataru; Miyakawa, Atsuo; Kawata, Yoshimasa

    2015-12-01

    Cell culture on silicon nitride membranes is required for atmospheric scanning electron microscopy, electron beam excitation assisted optical microscopy, and various biological sensors. Cell adhesion to silicon nitride membranes is typically weak, and cell proliferation is limited. We increased the adhesion force and proliferation of cultured HeLa cells by controlling the surface hydrophilicity of silicon nitride membranes. We covalently coupled carboxyl groups on silicon nitride membranes, and measured the contact angles of water droplets on the surfaces to evaluate the hydrophilicity. We cultured HeLa cells on the coated membranes and evaluated stretch of the cell. Cell migration and confluence were observed on the coated silicon nitride films. We also demonstrated preliminary observation result with direct electron beam excitation-assisted optical microscope.

  13. Sputtered silicon nitride coatings for wear protection

    NASA Technical Reports Server (NTRS)

    Grill, A.; Aron, P. R.

    1982-01-01

    Silicon nitride films were deposited by RF sputtering on 304 stainless steel substrates in a planar RF sputtering apparatus. The sputtering was performed from a Si3N4 target in a sputtering atmosphere of argon and nitrogen. The rate of deposition, the composition of the coatings, the surface microhardness and the adhesion of the coatings to the substrates were investigated as a function of the process parameters, such as: substrate target distance, fraction nitrogen in the sputtering atmosphere and sputtering pressure. Silicon rich coating was obtained for fraction nitrogen below 0.2. The rate of deposition decreases continuously with increasing fraction nitrogen and decreasing sputtering pressure. It was found that the adherence of the coatings improves with decreasing sputtering pressure, almost independently of their composition.

  14. Nanoporous silicon nitride membranes fabricated from porous nanocrystalline silicon templates

    NASA Astrophysics Data System (ADS)

    Desormeaux, J. P. S.; Winans, J. D.; Wayson, S. E.; Gaborski, T. R.; Khire, T. S.; Striemer, C. C.; McGrath, J. L.

    2014-08-01

    The extraordinary permeability and manufacturability of ultrathin silicon-based membranes are enabling devices with improved performance and smaller sizes in such important areas as molecular filtration and sensing, cell culture, electroosmotic pumping, and hemodialysis. Because of the robust chemical and mechanical properties of silicon nitride (SiN), several laboratories have developed techniques for patterning nanopores in SiN using reactive ion etching (RIE) through a template structure. These methods however, have failed to produce pores small enough for ultrafiltration (<100 nm) in SiN and involve templates that are prone to microporous defects. Here we present a facile, wafer-scale method to produce nanoporous silicon nitride (NPN) membranes using porous nanocrystalline silicon (pnc-Si) as a self-assembling, defect free, RIE masking layer. By modifying the mask layer morphology and the RIE etch conditions, the pore sizes of NPN can be adjusted between 40 nm and 80 nm with porosities reaching 40%. The resulting NPN membranes exhibit higher burst pressures than pnc-Si membranes while having 5× greater permeability. NPN membranes also demonstrate the capacity for high resolution separations (<10 nm) seen previously with pnc-Si membranes. We further demonstrate that human endothelial cells can be grown on NPN membranes, verifying the biocompatibility of NPN and demonstrating the potential of this material for cell culture applications.

  15. Feasibility study of silicon nitride protection of plastic encapsulated semiconductors

    NASA Technical Reports Server (NTRS)

    Peters, J. W.; Hall, T. C.; Erickson, J. J.; Gebhart, F. L.

    1979-01-01

    The application of low temperature silicon nitride protective layers on wire bonded integrated circuits mounted on lead frame assemblies is reported. An evaluation of the mechanical and electrical compatibility of both plasma nitride and photochemical silicon nitride (photonitride) passivations (parallel evaluations) of integrated circuits which were then encapsulated in plastic is described. Photonitride passivation is compatible with all wire bonded lead frame assemblies, with or without initial chip passivation. Plasma nitride passivation of lead frame assemblies is possible only if the chip is passivated before lead frame assembly. The survival rate after the environmental test sequence of devices with a coating of plasma nitride on the chip and a coating of either plasma nitride or photonitride over the assembled device is significantly greater than that of devices assembled with no nitride protective coating over either chip or lead frame.

  16. Molybdenum enhanced low-temperature deposition of crystalline silicon nitride

    DOEpatents

    Lowden, R.A.

    1994-04-05

    A process for chemical vapor deposition of crystalline silicon nitride is described which comprises the steps of: introducing a mixture of a silicon source, a molybdenum source, a nitrogen source, and a hydrogen source into a vessel containing a suitable substrate; and thermally decomposing the mixture to deposit onto the substrate a coating comprising crystalline silicon nitride containing a dispersion of molybdenum silicide. 5 figures.

  17. Quantum electromechanics on silicon nitride nanomembranes

    PubMed Central

    Fink, J. M.; Kalaee, M.; Pitanti, A.; Norte, R.; Heinzle, L.; Davanço, M.; Srinivasan, K.; Painter, O.

    2016-01-01

    Radiation pressure has recently been used to effectively couple the quantum motion of mechanical elements to the fields of optical or microwave light. Integration of all three degrees of freedom—mechanical, optical and microwave—would enable a quantum interconnect between microwave and optical quantum systems. We present a platform based on silicon nitride nanomembranes for integrating superconducting microwave circuits with planar acoustic and optical devices such as phononic and photonic crystals. Using planar capacitors with vacuum gaps of 60 nm and spiral inductor coils of micron pitch we realize microwave resonant circuits with large electromechanical coupling to planar acoustic structures of nanoscale dimensions and femtoFarad motional capacitance. Using this enhanced coupling, we demonstrate microwave backaction cooling of the 4.48 MHz mechanical resonance of a nanobeam to an occupancy as low as 0.32. These results indicate the viability of silicon nitride nanomembranes as an all-in-one substrate for quantum electro-opto-mechanical experiments. PMID:27484751

  18. Development of silicon nitride of improved toughness

    NASA Technical Reports Server (NTRS)

    Brennan, J. J.

    1979-01-01

    The application of reaction sintered Si2N4 energy absorbing surface layers to hot-pressed Si3N4 was investigated. The surface layer was formed by in-place nitridation of silicon powder. It was found that reaction sintered Si3N4 layers of 1 mm thickness, fabricated from either -100, +200, -200, or -325 mesh Si powder and nitrided in 96% N2/4% H2 so that approximately 20-25 vol % unnitrided Si remained in the layer, resulted in a sevenfold increase in ballistic impact resistance of a 0.64 cm thick hot-pressed SI3N4 substrate from RT 1370 C. Both NC-132 SI3N4, with MgO additive, and NCX-34 Si3N4, with Y2O3 additive, were evaluated as substrate material. The finer grain size -200 and -325 mesh nitrided Si layers were for their smoothness and relatively high density. It was found that nitriding in N2/H2 mixtures, rather than pure N2, resulted in a microstructure that did not substantially degrade the strength of the hot-pressed Si3N4 substrate. Thermal cycling tests on the RSSN/HPSN combinations from 200 C to 1370 C for 75 cycles in air did not degrade the impact resistance nor the interfacial bonding, although a large amount of internal silica formation occurred within the RSSN layer. Mach 0.8, 5 hr, hot gas erosion tests showed no surface recession of RSSN layers at 1200 C and slight surface recession at 1370 C.

  19. Analytical and Experimental Evaluation of Joining Silicon Carbide to Silicon Carbide and Silicon Nitride to Silicon Nitride for Advanced Heat Engine Applications Phase II

    SciTech Connect

    Sundberg, G.J.

    1994-01-01

    Techniques were developed to produce reliable silicon nitride to silicon nitride (NCX-5101) curved joins which were used to manufacture spin test specimens as a proof of concept to simulate parts such as a simple rotor. Specimens were machined from the curved joins to measure the following properties of the join interlayer: tensile strength, shear strength, 22 C flexure strength and 1370 C flexure strength. In parallel, extensive silicon nitride tensile creep evaluation of planar butt joins provided a sufficient data base to develop models with accurate predictive capability for different geometries. Analytical models applied satisfactorily to the silicon nitride joins were Norton's Law for creep strain, a modified Norton's Law internal variable model and the Monkman-Grant relationship for failure modeling. The Theta Projection method was less successful. Attempts were also made to develop planar butt joins of siliconized silicon carbide (NT230).

  20. Comparative infrared study of silicon and germanium nitrides

    NASA Astrophysics Data System (ADS)

    Baraton, M. I.; Marchand, R.; Quintard, P.

    1986-03-01

    Silicon and germanium nitride (Si 3N 4 and Ge 3N 4) are isomorphic compounds. They have been studied in the β-phase which crystallises in the hexagonal system. The space group is P6 3/m (C 6h2). The IR transmission spectra of these two nitrides are very similar but the absorption frequencies of germanium nitride are shifted to the lower values in comparison with silicon nitride. We noted that the atomic mass effect is the only cause of this shift for the streching modes but not for the bending modes.

  1. Microcavity effects in the photoluminescence of hydrogenated amorphous silicon nitride

    NASA Astrophysics Data System (ADS)

    Serpenguzel, Ali; Aydinli, Atilla; Bek, Alpan

    1998-07-01

    Fabry-Perot microcavities are used for the alteration of photoluminescence in hydrogenated amorphous silicon nitride grown with and without ammonia. The photoluminescence is red-near-infrared for the samples grown without ammonia, and blue-green for the samples grown with ammonia. In the Fabry- Perot microcavities, the amplitude of the photoluminescence is enhanced, while its linewidth is reduced with respect to the bulk hydrogenated amorphous silicon nitride. The microcavity was realized by a metallic back mirror and a hydrogenated amorphous silicon nitride--air or a metallic front mirror. The transmittance, reflectance, and absorbance spectra were also measured and calculated. The calculated spectra agree well with the experimental spectra. The hydrogenated amorphous silicon nitride microcavity has potential for becoming a versatile silicon based optoelectronic device such as a color flat panel display, a resonant cavity enhanced light emitting diode, or a laser.

  2. Silicon nitride protective coatings for silvered glass mirrors

    DOEpatents

    Tracy, C.E.; Benson, D.K.

    1984-07-20

    A protective diffusion barrier for metalized mirror structures is provided by a layer or coating of silicon nitride which is a very dense, transparent, dielectric material that is impervious to water, alkali, and other impurities and corrosive substances that typically attack the metal layers of mirrors and cause degradation of the mirrors' reflectivity. The silicon nitride layer can be deposited on the substrate prior to metal deposition thereon to stabilize the metal/substrate interface, and it can be deposited over the metal to encapsulate it and protect the metal from corrosion or other degradation. Mirrors coated with silicon nitride according to this invention can also be used as front surface mirrors.

  3. Electrical conduction mechanism in silicon nitride and oxy-nitride-sputtered thin films

    NASA Astrophysics Data System (ADS)

    Vila, M.; Román, E.; Prieto, C.

    2005-06-01

    We have studied the effect of reactive and nonreactive sputtering preparations on the composition and properties of silicon nitride thin films. Films were prepared from both silicon nitride ceramic and pure silicon targets under different Ar /N2 gas mixtures. For the different resulting samples, we have performed optical, x-ray photoemission spectroscopy (XPS), and transport measurements. The preparation conditions change the sample atomic composition and the effect of oxygen in the films, which in turn determines the dominant conduction mechanism. It becomes important to determine both the nonstoichiometry of the film and the phase where the oxygen is incorporated. Oxygen may appear as silicon oxide, forming a secondary phase inside silicon nitride; or it may consist of silicon oxy-nitride phases. The presence of these different phases, as revealed by XPS, determines the electrical properties and conduction mechanisms. Samples presenting space-charge-limited current as the dominant conduction mechanism correspond to those where a silicon oxy-nitride phase is formed (that becomes Ohmic for overstoichiometric Si content samples), while a Poole-Frenkel conduction behavior is characteristic of the silicon nitride phase.

  4. Silicon-doped boron nitride coated fibers in silicon melt infiltrated composites

    DOEpatents

    Corman, Gregory Scot; Luthra, Krishan Lal

    2002-01-01

    A fiber-reinforced silicon-silicon carbide matrix composite having improved oxidation resistance at high temperatures in dry or water-containing environments is produced. The invention also provides a method for protecting the reinforcing fibers in the silicon-silicon carbide matrix composites by coating the fibers with a silicon-doped boron nitride coating.

  5. Silicon-doped boron nitride coated fibers in silicon melt infiltrated composites

    DOEpatents

    Corman, Gregory Scot; Luthra, Krishan Lal

    1999-01-01

    A fiber-reinforced silicon--silicon carbide matrix composite having improved oxidation resistance at high temperatures in dry or water-containing environments is produced. The invention also provides a method for protecting the reinforcing fibers in the silicon--silicon carbide matrix composites by coating the fibers with a silicon-doped boron nitride coating.

  6. A review of oxide, silicon nitride, and silicon carbide brazing

    SciTech Connect

    Santella, M.L.; Moorhead, A.J.

    1987-01-01

    There is growing interest in using ceramics for structural applications, many of which require the fabrication of components with complicated shapes. Normal ceramic processing methods restrict the shapes into which these materials can be produced, but ceramic joining technology can be used to overcome many of these limitations, and also offers the possibility for improving the reliability of ceramic components. One method of joining ceramics is by brazing. The metallic alloys used for bonding must wet and adhere to the ceramic surfaces without excessive reaction. Alumina, partially stabilized zirconia, and silicon nitride have high ionic character to their chemical bonds and are difficult to wet. Alloys for brazing these materials must be formulated to overcome this problem. Silicon carbide, which has some metallic characteristics, reacts excessively with many alloys, and forms joints of low mechanical strength. The brazing characteristics of these three types of ceramics, and residual stresses in ceramic-to-metal joints are briefly discussed.

  7. Improved silicon nitride for advanced heat engines

    NASA Technical Reports Server (NTRS)

    Yeh, Harry C.; Fang, Ho T.

    1991-01-01

    The results of a four year program to improve the strength and reliability of injection-molded silicon nitride are summarized. Statistically designed processing experiments were performed to identify and optimize critical processing parameters and compositions. Process improvements were monitored by strength testing at room and elevated temperatures, and microstructural characterization by optical, scanning electron microscopes, and scanning transmission electron microscope. Processing modifications resulted in a 20 percent strength and 72 percent Weibull slope improvement of the baseline material. Additional sintering aids screening and optimization experiments succeeded in developing a new composition (GN-10) capable of 581.2 MPa at 1399 C. A SiC whisker toughened composite using this material as a matrix achieved a room temperature toughness of 6.9 MPa m(exp .5) by the Chevron notched bar technique. Exploratory experiments were conducted on injection molding of turbocharger rotors.

  8. Slurry-pressing consolidation of silicon nitride

    NASA Technical Reports Server (NTRS)

    Sanders, William A.; Kiser, James D.; Freedman, Marc R.

    1988-01-01

    A baseline slurry-pressing method for a silicon nitride material is developed. The Si3N4 composition contained 5.8 wt percent SiO2 and 6.4 wt percent Y2O3. Slurry-pressing variables included volume percent solids, application of ultrasonic energy, and pH. Twenty vol percent slurry-pressed material was approximately 11 percent stronger than both 30 vol percent slurry-pressed and dry-pressed materials. The Student's t-test showed the difference to be significant at the 99 percent confidence level. Twenty volume percent (300 h) slurry-pressed test bars exhibited strengths as high as 980 MPa. Large, columnar beta-Si3N4 grains caused failure in the highest strength specimens. The improved strength correlated with better structural uniformity as determined by radiography, optical microscopy, and image analysis.

  9. Solid-state synthesis of luminescent silicon nitride nanocrystals.

    PubMed

    Dasog, Mita; Veinot, Jonathan G C

    2012-04-18

    Silicon nitride nanocrystals (NCs) have been prepared via in situ nitridation of magnesium followed by a metathesis reaction with sol-gel derived silica particles. Highly luminescent, freestanding β-Si(3)N(4) NCs with complex surface chemistry dominated by Si-H and N-H moieties were isolated upon etching with hydrofluoric acid.

  10. Effect of processing parameters on reaction bonding of silicon nitride

    NASA Technical Reports Server (NTRS)

    Richman, M. H.; Gregory, O. J.; Magida, M. B.

    1980-01-01

    Reaction bonded silicon nitride was developed. The relationship between the various processing parameters and the resulting microstructures was to design and synthesize reaction bonded materials with improved room temperature mechanical properties.

  11. Ellipsometric study of silicon nitride on gallium arsenide

    NASA Technical Reports Server (NTRS)

    Alterovitz, S. A.; Bu-Abbud, G. H.; Woollam, J. A.; Liu, D.; Chung, Y.; Langer, D.

    1982-01-01

    A method for optimizing the sensitivity of ellipsometric measurements for thin dielectric films on semiconductors is described in simple physical terms. The technique is demonstrated for the case of sputtered silicon nitride films on gallium arsenide.

  12. Infrared Dielectric Properties of Low-stress Silicon Nitride

    NASA Technical Reports Server (NTRS)

    Cataldo, Giuseppe; Beall, James A.; Cho, Hsiao-Mei; McAndrew, Brendan; Niemack, Michael D.; Wollack, Edward J.

    2012-01-01

    Silicon nitride thin films play an important role in the realization of sensors, filters, and high-performance circuits. Estimates of the dielectric function in the far- and mid-IR regime are derived from the observed transmittance spectra for a commonly employed low-stress silicon nitride formulation. The experimental, modeling, and numerical methods used to extract the dielectric parameters with an accuracy of approximately 4% are presented.

  13. Wideband long wave infrared metamaterial absorbers based on silicon nitride

    NASA Astrophysics Data System (ADS)

    Üstün, Kadir; Turhan-Sayan, Gönül

    2016-11-01

    In this paper, we present silicon nitride metamaterial absorber designs that accomplish large bandwidth and high absorption in the long wave infrared (LWIR) region. These designs are based on the metal-insulator-metal topology, insulator (silicon nitride), and the top metal (aluminum) layers are optimized to obtain high absorptance values in large bandwidths, for three different silicon nitride based absorber structures. The absorption spectrum of the final design reaches absorptance values above 90% in the wavelength interval between 8.07 μm and 11.97 μm, and above 80% in the wavelength interval between 7.9 μm and 14 μm, in the case of normal incidence. The difficulty in the design process of such absorbers stems from the highly dispersive behavior of silicon nitride in the LWIR region. On the other hand, silicon nitride is a widely used material in microbolometers, and accomplishing wide band absorption in silicon nitride is crucial in this regard. Therefore, this study will pave the way for more efficient infrared imaging devices, which are crucial for defense and security systems. Additionally, such designs may also find applications in thermal emitters.

  14. Radiation tolerant silicon nitride insulated gate field effect transistors

    NASA Technical Reports Server (NTRS)

    Newman, P. A.

    1969-01-01

    Metal-Insulated-Semiconductor Field Effect Transistor /MISFET/ device uses a silicon nitride passivation layer over a thin silicon oxide layer to enhance the radiation tolerance. It is useful in electronic systems exposed to space radiation environment or the effects of nuclear weapons.

  15. Comparison of the surface charge behavior of commercial silicon nitride and silicon carbide powders

    NASA Technical Reports Server (NTRS)

    Whitman, Pamela K.; Feke, Donald L.

    1988-01-01

    The adsorption and desorption of protons from aqueous solution onto the surfaces of a variety of commercial silicon carbide and silicon nitride powders has been examined using a surface titration methodology. This method provides information on some colloidal characteristics, such as the point of zero charge (pzc) and the variation of proton adsorption with dispersion pH, useful for the prediction of optimal ceramic-processing conditions. Qualitatively, the magnitude of the proton adsorption from solution reveals small differences among all of the materials studied. However, the results show that the pzc for the various silicon nitride powders is affected by the powder synthesis route. Complementary investigations have shown that milling can also act to shift the pzc exhibited by silicon nitride powder. Also, studies of the role of the electrolyte in the development of surface charge have indicated no evidence of specific adsorption of ammonium ion on either silicon nitride or silicon carbide powders.

  16. Low temperature thermal transport in partially perforated silicon nitride membranes.

    SciTech Connect

    Yefremenko, V.; Wang, G.; Novosad, V.; Datesman, A.; Pearson, J.; Divan, R.; Chang, C. L.; Downes, T. P.; Mcmahon, J. J.; Bleem, L. E.; Crites, A. T.; Meyer, S. S.; Carlstrom, J. E.; Univ. of Chicago

    2009-05-04

    The thermal transport in partially trenched silicon nitride membranes has been studied in the temperature range from 0.3 to 0.6 K, with the transition edge sensor (TES), the sole source of membrane heating. The test configuration consisted of Mo/Au TESs lithographically defined on silicon nitride membranes 1 {micro}m thick and 6 mm{sup 2} in size. Trenches with variable depth were incorporated between the TES and the silicon frame in order to manage the thermal transport. It was shown that sharp features in the membrane surface, such as trenches, significantly impede the modes of phonon transport. A nonlinear dependence of thermal resistance on trench depth was observed. Partial perforation of silicon nitride membranes to control thermal transport could be useful in fabricating mechanically robust detector devices.

  17. Gettering of interstitial iron in silicon by plasma-enhanced chemical vapour deposited silicon nitride films

    NASA Astrophysics Data System (ADS)

    Liu, A. Y.; Sun, C.; Markevich, V. P.; Peaker, A. R.; Murphy, J. D.; Macdonald, D.

    2016-11-01

    It is known that the interstitial iron concentration in silicon is reduced after annealing silicon wafers coated with plasma-enhanced chemical vapour deposited (PECVD) silicon nitride films. The underlying mechanism for the significant iron reduction has remained unclear and is investigated in this work. Secondary ion mass spectrometry (SIMS) depth profiling of iron is performed on annealed iron-contaminated single-crystalline silicon wafers passivated with PECVD silicon nitride films. SIMS measurements reveal a high concentration of iron uniformly distributed in the annealed silicon nitride films. This accumulation of iron in the silicon nitride film matches the interstitial iron loss in the silicon bulk. This finding conclusively shows that the interstitial iron is gettered by the silicon nitride films during annealing over a wide temperature range from 250 °C to 900 °C, via a segregation gettering effect. Further experimental evidence is presented to support this finding. Deep-level transient spectroscopy analysis shows that no new electrically active defects are formed in the silicon bulk after annealing iron-containing silicon with silicon nitride films, confirming that the interstitial iron loss is not due to a change in the chemical structure of iron related defects in the silicon bulk. In addition, once the annealed silicon nitride films are removed, subsequent high temperature processes do not result in any reappearance of iron. Finally, the experimentally measured iron decay kinetics are shown to agree with a model of iron diffusion to the surface gettering sites, indicating a diffusion-limited iron gettering process for temperatures below 700 °C. The gettering process is found to become reaction-limited at higher temperatures.

  18. Method of densifying an article formed of reaction bonded silicon nitride

    NASA Technical Reports Server (NTRS)

    Mangels, John A. (Inventor)

    1982-01-01

    A method of densifying an article formed of reaction bonded silicon nitride is disclosed. The reaction bonded silicon nitride article is packed in a packing mixture consisting of silicon nitride powder and a densification aid. The reaction bonded silicon nitride article and packing powder are sujected to a positive, low pressure nitrogen gas treatment while being heated to a treatment temperature and for a treatment time to cause any open porosity originally found in the reaction bonded silicon nitride article to be substantially closed. Thereafter, the reaction bonded silicon nitride article and packing powder are subjected to a positive high pressure nitrogen gas treatment while being heated to a treatment temperature and for a treatment time to cause a sintering of the reaction bonded silicon nitride article whereby the strength of the reaction bonded silicon nitride article is increased.

  19. Improved silicon nitride for advanced heat engines

    NASA Technical Reports Server (NTRS)

    Yeh, H. C.; Wimmer, J. M.; Huang, H. H.; Rorabaugh, M. E.; Schienle, J.; Styhr, K. H.

    1985-01-01

    The AiResearch Casting Company baseline silicon nitride (92 percent GTE SN-502 Si sub 3 N sub 4 plus 6 percent Y sub 2 O sub 3 plus 2 percent Al sub 2 O sub 3) was characterized with methods that included chemical analysis, oxygen content determination, electrophoresis, particle size distribution analysis, surface area determination, and analysis of the degree of agglomeration and maximum particle size of elutriated powder. Test bars were injection molded and processed through sintering at 0.68 MPa (100 psi) of nitrogen. The as-sintered test bars were evaluated by X-ray phase analysis, room and elevated temperature modulus of rupture strength, Weibull modulus, stress rupture, strength after oxidation, fracture origins, microstructure, and density from quantities of samples sufficiently large to generate statistically valid results. A series of small test matrices were conducted to study the effects and interactions of processing parameters which included raw materials, binder systems, binder removal cycles, injection molding temperatures, particle size distribution, sintering additives, and sintering cycle parameters.

  20. Forming of silicon nitride by gelcasting

    SciTech Connect

    Omatete, O.O.; Strehlow, R.A. ); Armstrong, B.L. . Garrett Ceramic Components Div.)

    1990-01-01

    Gelcasting is a near-net-shape forming technique that is applicable to various types of powders. It is accomplished by casting a concentrated suspension of a commercial ceramic powder in a solution of a polymerizable monomer and then polymerizing. The monomer used in the process is acrylamide which undergoes a vinyl polymerization. A filled gel is formed, which is dried and processed further. Gelcasting of alumina, sialon and silicon nitride has been carried out as the principal part of the Oak Ridge National Laboratory (ORNL) program. Two rotors have been gelcast as part of a cooperative research agreement between Allied-Signal Aerospace Company and ORNL. Emphasis is placed on the unit-operations of the process. Because a requirement of the process is a castable suspension of more than 50 vol % solids loading, good dispersion is crucial. Drying, another key process, has been studied extensively. Data on the relationship of physical properties of products to some of the more significant processing variables is discussed. Environmental, safety and hygiene issues are summarized. 9 refs., 7 figs.

  1. Improved silicon nitride for advanced heat engines

    NASA Technical Reports Server (NTRS)

    Yeh, Hun C.; Fang, Ho T.

    1987-01-01

    The technology base required to fabricate silicon nitride components with the strength, reliability, and reproducibility necessary for actual heat engine applications is presented. Task 2 was set up to develop test bars with high Weibull slope and greater high temperature strength, and to conduct an initial net shape component fabrication evaluation. Screening experiments were performed in Task 7 on advanced materials and processing for input to Task 2. The technical efforts performed in the second year of a 5-yr program are covered. The first iteration of Task 2 was completed as planned. Two half-replicated, fractional factorial (2 sup 5), statistically designed matrix experiments were conducted. These experiments have identified Denka 9FW Si3N4 as an alternate raw material to GTE SN502 Si3N4 for subsequent process evaluation. A detailed statistical analysis was conducted to correlate processing conditions with as-processed test bar properties. One processing condition produced a material with a 97 ksi average room temperature MOR (100 percent of goal) with 13.2 Weibull slope (83 percent of goal); another condition produced 86 ksi (6 percent over baseline) room temperature strength with a Weibull slope of 20 (125 percent of goal).

  2. Versatile ultrathin nanoporous silicon nitride membranes

    SciTech Connect

    Vlassiouk, Ivan V

    2009-01-01

    Single- and multiple-nanopore membranes are both highly interesting for biosensing and separation processes, as well as their ability to mimic biological membranes. The density of pores, their shape, and their surface chemistry are the key factors that determine membrane transport and separation capabilities. Here, we report silicon nitride (SiN) membranes with fully controlled porosity, pore geometry, and pore surface chemistry. An ultrathin freestanding SiN platform is described with conical or double-conical nanopores of diameters as small as several nanometers, prepared by the track-etching technique. This technique allows the membrane porosity to be tuned from one to billions of pores per square centimeter. We demonstrate the separation capabilities of these membranes by discrimination of dye and protein molecules based on their charge and size. This separation process is based on an electrostatic mechanism and operates in physiological electrolyte conditions. As we have also shown, the separation capabilities can be tuned by chemically modifying the pore walls. Compared with typical membranes with cylindrical pores, the conical and double-conical pores reported here allow for higher fluxes, a critical advantage in separation applications. In addition, the conical pore shape results in a shorter effective length, which gives advantages for single biomolecule detection applications such as nanopore-based DNA analysis.

  3. Cavitation contributes substantially to tensile creep in silicon nitride

    SciTech Connect

    Luecke, W.E.; Wiederhorn, S.M.; Hockey, B.J.; Krause, R.F. Jr.; Long, G.G.

    1995-08-01

    During tensile creep of a hot isostatically pressed (HIPed) silicon nitride, the volume fraction of cavities increases linearly with strain; these cavities produce nearly all of the measured strain. In contrast, compressive creep in the same stress and temperature range produces very little cavitation. A stress exponent that increases with stress ({dot {var_epsilon}} {proportional_to} {sigma}{sup n}, 2 < n < 7) characterizes the tensile creep response, while the compressive creep response exhibits a stress dependence of unity. Furthermore, under the same stress and temperature, the material creeps nearly 100 times faster in tension than in compression. Transmission electron microscopy (TEM) indicates that the cavities formed during tensile creep occur in pockets of residual crystalline silicate phase located at silicon nitride multigrain junctions. Small-angle X-ray scattering (SAXS) from crept material quantifies the size distribution of cavities observed in TEM and demonstrates that cavity addition, rather than cavity growth, dominates the cavitation process. These observations are in accord with a model for creep based on the deformation of granular materials in which the microstructure must dilate for individual grains t slide past one another. During tensile creep the silicon nitride grains remain rigid; cavitation in the multigrain junctions allows the silicate to flow from cavities to surrounding silicate pockets, allowing the dilation of the microstructure and deformation of the material. Silicon nitride grain boundary sliding accommodates this expansion and leads to extension of the specimen. In compression, where cavitation is suppressed, deformation occurs by solution-reprecipitation of silicon nitride.

  4. Cavitation mechanisms during tensile creep of an advanced silicon nitride

    SciTech Connect

    Lofaj, F.; Okada, A.; Usami, H.

    1996-12-31

    Creep cavitation was investigated by electron microscopic methods after tensile creep tests of a self-reinforced silicon nitride conducted at temperatures ranging from 1250 to 1400{degrees}C. Fast and intensive cavitation in the amorphous secondary phase and slow growth of cavities inside the large silicon nitride grains were observed. Two basic types of cavities in glassy boundary phase were found; rounded cavities on the facets of large grains and irregular cavities in pockets among the matrix grains. A driving force for cavitation in boundary phase on large grain facets is concluded to be local tensile stress on local irregularities of facets produced on the interfaces between large grains and finer matrix grains during grain boundary sliding (GBS). Dilatant hydrostatic tensile stresses generated in a matrix due to GBS were thought to be responsible for cavitation in multigrain junctions. Small cavities formed on the facets and large cavities penetrating through the whole large grains of silicon nitride were found after long-term tests. The stresses transferred from matrix to large grains are suggested as a driving force for slow growth of small cavities on the facets and their later penetration inside the large silicon nitride grains. Basic cavitation mechanisms in amorphous phase are thought to be GBS and viscous flow while solution-precipitation is responsible for cavity growth in large silicon nitride grains.

  5. Interface state densities for metal-nitride-oxide-silicon devices

    NASA Astrophysics Data System (ADS)

    Xu, Dan; Kapoor, Vik J.

    1990-10-01

    The interface state density of metal-nitride-oxide-silicon (MNOS) devices was investigated as a function of silicon nitride (Si3N4) deposition temperature and postdeposition annealing conditions. The interface state density around the midgap of the oxide-silicon interface of the MNOS structures as a function of deposition temperature between 650 to 850 °C increased from 1.1 to 8.2×1011 cm-2 eV-1, for as-deposited silicon nitride films,; but decreased from 5.0 to 3.5×1011 cm-2 eV-1, for films annealed in nitrogen at 900 °C for 60 min; and further decreased and remained constant at 1.5×1011 cm-2 eV-1, for films which were further annealed in hydrogen at 900 °C for an additional 60 min. The interface state density increase is due to an increase in the loss of hydrogen at the interfacial region and also due to an increase in the thermal stress caused by differences in thermal expansion coefficients of silicon nitride and silicon dioxide films at higher deposition temperatures. The interface state density is subject to two opposing influences; an increase by thermal stress, and a reduction by hydrogen compensation of these states. Thus either low-temperature processing or subsequent hydrogen annealing after high processing temperatures is warranted.

  6. The origin of interfacial charging in irradiated silicon nitride capacitors

    NASA Astrophysics Data System (ADS)

    Hughes, R. C.

    1984-08-01

    Many experiments show that when metal-silicon nitride-silicon dioxide-silicon (MNOS) devices are irradiated in short circuit, a large interfacial charge builds up near the nitride-SiO2-Si interface. This effect cannot be explained by simple models of radiation-induced conductivity of the nitride, but it is reported here that inclusion of carrier diffusion and recombination in the photoconductivity equations can predict the observed behavior. Numerical solutions on a computer are required, however, when these complications are added. The simulations account for the magnitude and radiation dose dependence of the results, as well as the occurrence of a steady state during the irradiation. The location of the excess trapped charge near the interface is also predicted, along with the large number of new traps which must be introduced to influence the steady-state charge distribution.

  7. Origin of interfacial charging in irradiated silicon nitride capacitors

    SciTech Connect

    Hughes, R.C.

    1984-08-15

    Many experiments show that when metal-silicon nitride-silicon dioxide-silicon (MNOS) devices are irradiated in short circuit, a large interfacial charge builds up near the nitride-SiO/sub 2/-Si interface. This effect cannot be explained by simple models of radiation-induced conductivity of the nitride, but it is reported here that inclusion of carrier diffusion and recombination in the photoconductivity equations can predict the observed behavior. Numerical solutions on a computer are required, however, when these complications are added. The simulations account for the magnitude and radiation dose dependence of the results, as well as the occurrence of a steady state during the irradiation. The location of the excess trapped charge near the interface is also predicted, along with the large number of new traps which must be introduced to influence the steady-state charge distribution.

  8. Measurement and analysis of forces in grinding of silicon nitride

    SciTech Connect

    Jahanmir, S.; Hwang, T.; Whitenton, E.P.; Job, L.S.; Evans, C.J.

    1995-12-31

    Using an instrumented surface grinder, the two components of grinding forces (normal and tangential) were measured for different types of silicon nitride ceramics. The influences of grinding parameters, such as down feed and table speed, and grinding fluids on forces were determined. In addition to these measurements, the specific grinding energy defined as the energy per unit volume of removed material was calculated. This parameter and the measured forces were then analyzed to determine possible correlations with mechanical properties of the silicon nitrides. It was found that, in general, the grinding forces and the specific grinding energy increase with the hardness. Both the grinding forces and the specific grinding energy were influenced by the grinding fluid and the grinding parameters. The implication of these results on the mechanisms of material removal in grinding of silicon nitride and the possible tribological effects are discussed.

  9. Dynamic fracture toughnesses of reaction-bonded silicon nitride

    NASA Technical Reports Server (NTRS)

    Kobayashi, A. S.; Emery, A. F.; Liaw, B. M.

    1983-01-01

    The room-temperature dynamic fracture response of reaction-bonded silicon nitride is investigated using a hybrid experimental-numerical procedure. In this procedure, experimentally determined crack velocities are utilized to drive a dynamic finite-element code or dynamic finite-difference code in its generation mode in order to extract numerically the dynamic stress intensity factor of the fracturing specimen. Results show that the dynamic fracture toughness vs crack velocity relations of the two reaction-bonded silicon nitrides do not follow the general trend in those relations of brittle polymers and steel. A definite slow crack velocity during the initial phase of dynamic crack propagation is observed in reaction-bonded silicon nitride, which results in a nonunique dynamic fracture toughness vs crack velocity relation. In addition, it is found that a propagating crack will continue to propagate under a static stress intensity factor substantially lower than K(IC).

  10. Catalytic Effects of Cr on Nitridation of Silicon and Formation of One-dimensional Silicon Nitride Nanostructure.

    PubMed

    Liang, Feng; Lu, Lilin; Tian, Liang; Li, Faliang; Zhang, Haijun; Zhang, Shaowei

    2016-08-16

    The catalytic effects of chromium (Cr) on the direct nitridation of silicon (Si) and morphology of nitridation product were investigated. Cr dramatically improved the conversation of Si to silicon nitride (Si3N4). The complete conversion was achieved at 1350 °C upon addition of 1.25 wt% Cr. This temperature was much lower than that required in the case without using a catalyst. Meanwhile, Cr played an important role in the in-situ growth of one-dimensional (1-D) α-Si3N4 nanostructures. α-Si3N4 nanowires and nanobelts became the primary product phases when 5 wt% Cr was used as the catalyst. The growth processes of the 1-D α-Si3N4 nanostructures were governed by the vapor-solid mechanism. First-principle calculations suggest that electrons can be transferred from Cr atoms to N atoms, facilitating the Si nitridation.

  11. Plasma deposited silicon nitride for indium phosphide encapsulation

    NASA Technical Reports Server (NTRS)

    Valco, G. J.; Kapoor, V. J.; Biedenbender, M. D.; Williams, W. D.

    1989-01-01

    The composition and the annealing characteristics of plasma-deposited silicon-nitride encapsulating films on the ion-implanted InP substrates were investigated, using two different substrate-cleaning procedures (organic solvents and HF or HIO3 solutions) prior to encapsulation. The effect of plasma deposition of silicon nitride on the InP substrates was assessed through the current-voltage characteristics of Schottky diodes. Results of XPS analyses showed that the cleaning procedure that employed HF solution left less oxygen on the InP surface than the procedure involving HIO3. No chemical interaction between the film and the substrate was observed before or after annealing.

  12. Selective chemical modification of silicon nitride/silicon oxide nanostructures to develop label-free biosensors.

    PubMed

    Bañuls, María-José; González-Pedro, Victoria; Barrios, Carlos A; Puchades, Rosa; Maquieira, Angel

    2010-02-15

    The selective introduction of functional groups on the surface of silicon nitride/silicon oxide nanostructures was studied. Chemical strategies based on organosilane, Si-H and N-H reactivities were assayed. Among these strategies, the use of glutaraldehyde to selectively immobilize biomolecules only on the silicon nitride part of the chip surface was the most effective for the covalent attachment of proteins, maintaining also their bioavailability. The biomolecule surface coverage results up to 80% and the modification is selective versus silicon oxide; the biomolecule attaching only to silicon nitride and leaving the silicon oxide area of the device unmodified. The effectiveness of our novel selective surface modification procedure is also supported by comparing experimental and numerical calculations of the optical performance of a label-free optical ring resonator based on Si(3)N(4)/SiO(2) slot-waveguides.

  13. Gamma radiation effects in amorphous silicon and silicon nitride photonic devices.

    PubMed

    Du, Qingyang; Huang, Yizhong; Ogbuu, Okechukwu; Zhang, Wei; Li, Junying; Singh, Vivek; Agarwal, Anuradha M; Hu, Juejun

    2017-02-01

    Understanding radiation damage is of significant importance for devices operating in radiation-harsh environments. In this Letter, we present a systematic study on gamma radiation effects in amorphous silicon and silicon nitride guided wave devices. It is found that gamma radiation increases the waveguide modal effective indices by as much as 4×10-3 in amorphous silicon and 5×10-4 in silicon nitride at 10 Mrad dose. This Letter further reveals that surface oxidation and radiation-induced densification account for the observed index change.

  14. Method for one-to-one polishing of silicon nitride and silicon oxide

    NASA Technical Reports Server (NTRS)

    Babu, Suryadevara V. (Inventor); Natarajan, Anita (Inventor)

    2009-01-01

    The present invention provides a method of removing silicon nitride at about the same removal rate as silicon dioxide by CMP. The method utilizes a polishing slurry that includes colloidal silica abrasive particles dispersed in water and additives that modulate the silicon dioxide and silicon nitride removal rates such that they are about the same. In one embodiment of the invention, the additive is lysine or lysine mono hydrochloride in combination with picolinic acid, which is effective at a pH of about 8. In another embodiment of the invention, the additive is arginine in combination with picolinic acid, which is effective at a pH of about 10.

  15. Deposition of reactively ion beam sputtered silicon nitride coatings

    NASA Technical Reports Server (NTRS)

    Grill, A.

    1982-01-01

    An ion beam source was used to deposit silicon nitride films by reactively sputtering a silicon target with beams of Ar + N2 mixtures. The nitrogen fraction in the sputtering gas was 0.05 to 0.80 at a total pressure of 6 to 2 millionth torr. The ion beam current was 50 mA at 500 V. The composition of the deposited films was investigated by auger electron spectroscopy and the rate of deposition was determined by interferometry. A relatively low rate of deposition of about 2 nm. one-tenth min. was found. AES spectra of films obtained with nitrogen fractions higher than 0.50 were consistent with a silicon to nitrogen ratio corresponding to Si3N4. However the AES spectra also indicated that the sputtered silicon nitride films were contaminated with oxygen and carbon and contained significant amounts of iron, nickel, and chromium, most probably sputtered from the holder of the substrate and target.

  16. Stability and rheology of dispersions of silicon nitride and silicon carbide

    NASA Technical Reports Server (NTRS)

    Feke, Donald L.

    1987-01-01

    The relationship between the surface and colloid chemistry of commercial ultra-fine silicon carbide and silicon nitride powders was examined by a variety of standard characterization techniques and by methodologies especially developed for ceramic dispersions. These include electrokinetic measurement, surface titration, and surface spectroscopies. The effects of powder pretreatment and modification strategies, which can be utilized to augment control of processing characteristics, were monitored with these technologies. Both silicon carbide and nitride were found to exhibit silica-like surface chemistries, but silicon nitride powders possess an additional amine surface functionality. Colloidal characteristics of the various nitride powders in aqueous suspension is believed to be highly dependent on the relative amounts of the two types of surface groups, which in turn is determined by the powder synthesis route. The differences in the apparent colloidal characteristics for silicon nitride powders cannot be attributed to the specific absorption of ammonium ions. Development of a model for the prediction of double-layer characteristics of materials with a hybrid site interface facilitated understanding and prediction of the behavior of both surface charge and surface potential for these materials. The utility of the model in application to silicon nitride powders was demonstrated.

  17. An Investigation of Residual Stresses in Machined Silicon Nitride

    DTIC Science & Technology

    1992-07-01

    passing the particles through a 325-mesh screen. Methodologies for the experimental determination of residual stress include Barkhausen noise analysis...AD-A254 635 ~jjMTL TR 92-46 - 154 kDl AN INVESTIGATION OF RESIDUAL STRESSES IN MACHINED SILICON NITRIDE DANIEL J. SNOHA U.S. ARMY MATERIALS...NUMBER MTL TR 92-46 4. TITLE (and Subtitle) 5. TYPE OF REPORT & PERIOD COVERED AN INVESTIGATION OF RESIDUAL STRESSES IN Final Report MACHINED SILICON

  18. Strength and toughness of monolithic and composite silicon nitrides

    NASA Technical Reports Server (NTRS)

    Salem, Jonathan A.

    1990-01-01

    The strength and toughness of two composite and two monolithic silicon nitrides were measured from 25 to 1400 C. The monolithic and composite materials were made from similar starting powders. Both of the composite materials contained 30 vol percent silicon carbide whiskers. All measurements were made by four point flexure in surrounding air and humidity. The composite and monolithic materials exhibited similar fast fracture properties as a function of temperature.

  19. Processing Research on Chemically Vapor Deposited Silicon Nitride.

    DTIC Science & Technology

    1979-12-01

    the feasi- bility of synthesizing free-standing plate and figured geometries of phase-pure silicon nitride by the chemical vapor deposition (CVD) method...ates toward moisture and the probability that they all contain absorbed ammonium chloride and ammonia. A strong ammoniacal odor indicates that...solid (V- L -S) processes favored by high ammonia/silicon ratios, high concentrations and long times. Whisker formation would be favored by the opposite

  20. Silicon Nitride for Direct Water-Splitting and Corrosion Mitigation

    SciTech Connect

    Head, J.; Turner, J.A.

    2006-01-01

    Todays fossil fuels are becoming harder to obtain, creating pollution problems, and posing hazards to people’s health. One alternative to fossil fuels is hydrogen, capable of serving as a clean and efficient energy carrier. Certain semiconductors are able to harness the energy of photons and direct it into water electrolysis in a process known as photoelectrochemical water splitting. Triple junction devices integrate three semiconductors of different band gaps resulting in a monolithic material that absorbs over a broader spectrum. Amorphous silicon (a-Si) is one such material that, when stacked in tandem, possesses water-splitting capabilities. Even though a-Si is capable of splitting water, it is an unstable material in solution and therefore requires a coating to protect the surface from corrosion. A stable, transparent material that has the potential for corrosion protection is silicon nitride. In this study, silicon nitride thin films were grown using DC magnetron sputtering with varying amounts of argon and nitrogen added to the system. X-ray diffraction indicated amorphous silicon nitride films. Current as a function of potential was determined from cyclic voltammetry measurements. Mott-Schottky analysis showed n-type behavior with absorption and transmission measurements indicated variation in flatband potentials. Variation in band gap values ranging from 1.90 to 4.0 eV. Corrosion measurements reveal that the silicon nitride samples exhibit both p-type and n-type behavior. Photocurrent over a range of potentials was greater in samples that were submerged in acidic electrolyte. Silicon nitride shows good stability in acidic, neutral, and basic solutions, indicative of a good material for corrosion mitigation.

  1. Textured silicon nitride: processing and anisotropic properties

    PubMed Central

    Zhu, Xinwen; Sakka, Yoshio

    2008-01-01

    Textured silicon nitride (Si3N4) has been intensively studied over the past 15 years because of its use for achieving its superthermal and mechanical properties. In this review we present the fundamental aspects of the processing and anisotropic properties of textured Si3N4, with emphasis on the anisotropic and abnormal grain growth of β-Si3N4, texture structure and texture analysis, processing methods and anisotropic properties. On the basis of the texturing mechanisms, the processing methods described in this article have been classified into two types: hot-working (HW) and templated grain growth (TGG). The HW method includes the hot-pressing, hot-forging and sinter-forging techniques, and the TGG method includes the cold-pressing, extrusion, tape-casting and strong magnetic field alignment techniques for β-Si3N4 seed crystals. Each processing technique is thoroughly discussed in terms of theoretical models and experimental data, including the texturing mechanisms and the factors affecting texture development. Also, methods of synthesizing the rodlike β-Si3N4 single crystals are presented. Various anisotropic properties of textured Si3N4 and their origins are thoroughly described and discussed, such as hardness, elastic modulus, bending strength, fracture toughness, fracture energy, creep behavior, tribological and wear behavior, erosion behavior, contact damage behavior and thermal conductivity. Models are analyzed to determine the thermal anisotropy by considering the intrinsic thermal anisotropy, degree of orientation and various microstructure factors. Textured porous Si3N4 with a unique microstructure composed of oriented elongated β-Si3N4 and anisotropic pores is also described for the first time, with emphasis on its unique mechanical and thermal-mechanical properties. Moreover, as an important related material, textured α-Sialon is also reviewed, because the presence of elongated α-Sialon grains allows the production of textured α-Sialon using the

  2. Textured silicon nitride: processing and anisotropic properties.

    PubMed

    Zhu, Xinwen; Sakka, Yoshio

    2008-07-01

    Textured silicon nitride (Si3N4) has been intensively studied over the past 15 years because of its use for achieving its superthermal and mechanical properties. In this review we present the fundamental aspects of the processing and anisotropic properties of textured Si3N4, with emphasis on the anisotropic and abnormal grain growth of β-Si3N4, texture structure and texture analysis, processing methods and anisotropic properties. On the basis of the texturing mechanisms, the processing methods described in this article have been classified into two types: hot-working (HW) and templated grain growth (TGG). The HW method includes the hot-pressing, hot-forging and sinter-forging techniques, and the TGG method includes the cold-pressing, extrusion, tape-casting and strong magnetic field alignment techniques for β-Si3N4 seed crystals. Each processing technique is thoroughly discussed in terms of theoretical models and experimental data, including the texturing mechanisms and the factors affecting texture development. Also, methods of synthesizing the rodlike β-Si3N4 single crystals are presented. Various anisotropic properties of textured Si3N4 and their origins are thoroughly described and discussed, such as hardness, elastic modulus, bending strength, fracture toughness, fracture energy, creep behavior, tribological and wear behavior, erosion behavior, contact damage behavior and thermal conductivity. Models are analyzed to determine the thermal anisotropy by considering the intrinsic thermal anisotropy, degree of orientation and various microstructure factors. Textured porous Si3N4 with a unique microstructure composed of oriented elongated β-Si3N4 and anisotropic pores is also described for the first time, with emphasis on its unique mechanical and thermal-mechanical properties. Moreover, as an important related material, textured α-Sialon is also reviewed, because the presence of elongated α-Sialon grains allows the production of textured α-Sialon using the

  3. Gelcasting of silicon preforms for the production of sintered reaction-bonded silicon nitride

    SciTech Connect

    Kiggans, J.O. Jr.; Nunn, S.D.; Tiegs, T.N.; Davisson, C.C.; Coffey, D.W.; Maria, J.P.

    1995-12-31

    Gelcasting of silicon metal for the production of sintered reaction-bonded silicon nitride (SRBSN) was investigated in order to identify associated advantages over conventional forming techniques, i.e., die and isostatic pressing. Compacts were formed from identical powder mixtures by both gelcasting and pressing, and were nitrided and sintered to produce SRBSN ceramics using both conventional and microwave heating. Characterization of the samples included measurement of green density, green and nitrided pore structure, weight gain during nitridation, final density, microstructure, toughness, and flexural strength. It was found that a more uniform pore structure existed in the green gelcast samples. It is believed that this pore configuration aided in nitridation, and manifested itself in a more uniform final microstructure. In addition, improved mechanical properties were achieved in the gelcast samples. This improvement can be attributed to green microstructure homogeneity. An additional finding of this study was that microwave hearing combined with gelcast forming resulted in SRBSN materials with improved mechanical properties.

  4. Memory characteristics of MNOS capacitors fabricated with PECVD silicon nitride

    NASA Astrophysics Data System (ADS)

    Khaliq, M. A.; Shams, Q. A.; Brown, W. D.; Naseem, H. A.

    1988-08-01

    The memory performance of metal-nitride-oxide-silicon (MNOS) capacitors, fabricated with "as-deposited" PECVD silicon nitride, have been evaluated using high-frequency, capacitance-voltage characteristics. A 4.2 V memory window was achieved for a programming field of 6 × 10 6V/ cm and a pulse width of 1 μs. Decay rates varied between 0.1 and 1.0 V per decade of time in seconds depending on nitride deposition conditions and initial window size. Devices endurance cycled to 10 8 suffered a small decrease in window size and a slight shift in memory window center. Retention data taken following endurance cycling to 10 7 showed a negligible degradation of decay rate. Vertical scaling of the nitride layer to approximately 100 Å yielded devices which could be programmed with 5-8 V. Nitride films were annealed at temperatures of 400-800°C. Fourier Transform Infrared (FTIR) analysis revealed a severe loss of hydrogen for temperatures above 400°C. Memory performance of the films degraded in parallel with loss of hydrogen.

  5. Development of a continuous spinning process for producing silicon carbide - silicon nitride precursor fibers

    NASA Technical Reports Server (NTRS)

    1985-01-01

    An apparatus was designed for the continuous production of silicon carbide - silicon nitride precursor fibers. The precursor polymer can be fiberized, crosslined and pyrolyzed. The product is a metallic black fiber with the composition of the type C sub x Si sub y n sub z. Little, other than the tensile strength and modulus of elasticity, is known of the physical properties.

  6. Silicon Nitride and Silicon Carbide Ceramics Structural Components in Avionics and Space

    NASA Astrophysics Data System (ADS)

    Berroth, Karl

    2014-06-01

    In the paper, Silicon Nitride and silicon carbide components for avionics and space are described. These lightweight stiff and strong materials with low and very low CTE and high thermal conductivity provide means for new designs and higher resolution in passive structures for optical instruments. Material properties and application examples are discussed.

  7. Hydrogen annealing of silicon gate-nitride-oxide-silicon nonvolatile memory devices

    NASA Astrophysics Data System (ADS)

    Topich, James A.; Turi, Raymond A.

    1982-10-01

    A hydrogen annealing study of silicon gate-nitride-oxide-silicon (SNOS) nonvolatile memory devices showed that the important parameter in determining the optimum hydrogen annealing temperature for maximum charge retention is the previous thermal history of the memory devices. If a memory device's charge retention is not degraded by high-temperature processing, then the hydrogen anneal should be at the silicon nitride deposition temperature. If a device is degraded by high-temperature processing, then the hydrogen anneal should be at the degradation temperature.

  8. Polyorganosilazane preceramic binder development for reaction bonded silicon nitride composites

    SciTech Connect

    Mohr, D.L.; Starr, T.L.

    1992-11-01

    This study has examined the use of two commercially available polyorganosilazanes for application as preceramic binders in a composite composed of silicon carbide fibers in a reaction bonded silicon nitride (RBSN) matrix. Ceramic monolithic and composite samples were produced. Density of monolithic and whisker reinforced RBSN samples containing the polysilazane binder was increased. Mercury intrusion porosimetry revealed a significant decrease in the pore sizes of samples containing a polyorganosilazane binder. Electron micrographs of samples containing the preceramic binder looked similar to control samples containing no precursor. Overall, incorporation of the polysilazane into monolithic and whisker reinforced samples resulted in significantly increased density and decreased porosity. Nitriding of the RBSN was slightly retarded by addition of the polysilazane binder. Samples with the preceramic binders contained increased contents of {alpha} versus {beta}-silicon nitride which may be due to interaction of hydrogen evolved from polysilazane pyrolysis with the nitriding process. Initial efforts to produce continuous fiber reinforced composites via this method have not realized the same improvements in density and porosity which have been observed for monolithic and whisker reinforced samples. Further, the addition of perceramic binder resulted in a more brittle fracture morphology as compared to similar composites made without the binder.

  9. Polyorganosilazane preceramic binder development for reaction bonded silicon nitride composites

    SciTech Connect

    Mohr, D.L.; Starr, T.L. )

    1992-11-01

    This study has examined the use of two commercially available polyorganosilazanes for application as preceramic binders in a composite composed of silicon carbide fibers in a reaction bonded silicon nitride (RBSN) matrix. Ceramic monolithic and composite samples were produced. Density of monolithic and whisker reinforced RBSN samples containing the polysilazane binder was increased. Mercury intrusion porosimetry revealed a significant decrease in the pore sizes of samples containing a polyorganosilazane binder. Electron micrographs of samples containing the preceramic binder looked similar to control samples containing no precursor. Overall, incorporation of the polysilazane into monolithic and whisker reinforced samples resulted in significantly increased density and decreased porosity. Nitriding of the RBSN was slightly retarded by addition of the polysilazane binder. Samples with the preceramic binders contained increased contents of [alpha] versus [beta]-silicon nitride which may be due to interaction of hydrogen evolved from polysilazane pyrolysis with the nitriding process. Initial efforts to produce continuous fiber reinforced composites via this method have not realized the same improvements in density and porosity which have been observed for monolithic and whisker reinforced samples. Further, the addition of perceramic binder resulted in a more brittle fracture morphology as compared to similar composites made without the binder.

  10. Chemical Profiling of Silicon Nitride Structures

    DTIC Science & Technology

    1989-06-01

    Zip Can*) 7b ADORESSC, State. anid 71PCoaej 4.800 Oak Grove Drive ?asadena CA 91103 Hanscom AFB MA 01721-S-COC 3a NAM );: ION SPCNSOR!NG 130 OFItSYMBOL...I Chapter 2: Studies of Metal -Nitride-Oxide-Semiconductor (MNOS) Structures ................................ 12 Chapter 3...3 88 II. SO Formed by Ion Implantation .......................................................... 8 89 Ill. SO

  11. Electroless plating of thin gold films directly onto silicon nitride thin films and into micropores.

    PubMed

    Whelan, Julie C; Karawdeniya, Buddini Iroshika; Bandara, Y M Nuwan D Y; Velleco, Brian D; Masterson, Caitlin M; Dwyer, Jason R

    2014-07-23

    A method to directly electrolessly plate silicon-rich silicon nitride with thin gold films was developed and characterized. Films with thicknesses <100 nm were grown at 3 and 10 °C between 0.5 and 3 h, with mean grain sizes between ∼20 and 30 nm. The method is compatible with plating free-standing ultrathin silicon nitride membranes, and we successfully plated the interior walls of micropore arrays in 200 nm thick silicon nitride membranes. The method is thus amenable to coating planar, curved, and line-of-sight-obscured silicon nitride surfaces.

  12. Analytical and experimental evaluation of joining silicon carbide to silicon carbide and silicon nitride to silicon nitride for advanced heat engine applications, phase 2

    NASA Astrophysics Data System (ADS)

    Sundberg, G. J.; Vartabedian, A. M.; Wade, J. A.; White, C. S.

    1994-10-01

    The purpose of joining, Phase 2 was to develop joining technologies for HIP'ed Si3N4 with 4wt% Y2O3 (NCX-5101) and for a siliconized SiC (NT230) for various geometries including: butt joins, curved joins and shaft to disk joins. In addition, more extensive mechanical characterization of silicon nitride joins to enhance the predictive capabilities of the analytical/numerical models for structural components in advanced heat engines was provided. Mechanical evaluation were performed by: flexure strength at 22 C and 1,370 C, stress rupture at 1,370 C, high temperature creep, 22 C tensile testing and spin tests. While the silicon nitride joins were produced with sufficient integrity for many applications, the lower join strength would limit its use in the more severe structural applications. Thus, the silicon carbide join quality was deemed unsatisfactory to advance to more complex, curved geometries. The silicon carbide joining methods covered within this contract, although not entirely successful, have emphasized the need to focus future efforts upon ways to obtain a homogeneous, well sintered parent/join interface prior to siliconization. In conclusion, the improved definition of the silicon carbide joining problem obtained by efforts during this contract have provided avenues for future work that could successfully obtain heat engine quality joins.

  13. Analytical and experimental evaluation of joining silicon carbide to silicon carbide and silicon nitride to silicon nitride for advanced heat engine applications Phase 2. Final report

    SciTech Connect

    Sundberg, G.J.; Vartabedian, A.M.; Wade, J.A.; White, C.S.

    1994-10-01

    The purpose of joining, Phase 2 was to develop joining technologies for HIP`ed Si{sub 3}N{sub 4} with 4wt% Y{sub 2}O{sub 3} (NCX-5101) and for a siliconized SiC (NT230) for various geometries including: butt joins, curved joins and shaft to disk joins. In addition, more extensive mechanical characterization of silicon nitride joins to enhance the predictive capabilities of the analytical/numerical models for structural components in advanced heat engines was provided. Mechanical evaluation were performed by: flexure strength at 22 C and 1,370 C, stress rupture at 1,370 C, high temperature creep, 22 C tensile testing and spin tests. While the silicon nitride joins were produced with sufficient integrity for many applications, the lower join strength would limit its use in the more severe structural applications. Thus, the silicon carbide join quality was deemed unsatisfactory to advance to more complex, curved geometries. The silicon carbide joining methods covered within this contract, although not entirely successful, have emphasized the need to focus future efforts upon ways to obtain a homogeneous, well sintered parent/join interface prior to siliconization. In conclusion, the improved definition of the silicon carbide joining problem obtained by efforts during this contract have provided avenues for future work that could successfully obtain heat engine quality joins.

  14. Use of free silicon in liquid phase sintering of silicon nitrides and sialons

    DOEpatents

    Raj, Rishi; Baik, Sunggi

    1985-11-12

    This invention relates to the production of improved high density nitrogen based ceramics by liquid-phase densification of silicon nitride or a compound of silicon-nitrogen-oxygen-metal, e.g. a sialon. In the process and compositions of the invention minor amounts of finely divided silicon are employed together with the conventional liquid phase producing additives to enhance the densification of the resultant ceramic.

  15. Use of free silicon in liquid phase sintering of silicon nitrides and sialons

    DOEpatents

    Raj, R.; Baik, S.

    1985-11-12

    This invention relates to the production of improved high density nitrogen based ceramics by liquid-phase densification of silicon nitride or a compound of silicon-nitrogen-oxygen-metal, e.g. a sialon. In the process and compositions of the invention minor amounts of finely divided silicon are employed together with the conventional liquid phase producing additives to enhance the densification of the resultant ceramic. 4 figs.

  16. Crystallization behavior of silicon quantum dots in a silicon nitride matrix.

    PubMed

    Ha, Rin; Kim, Shinho; Kim, Hyun Jong; Lee, Jung Chul; Bae, Jong-Seong; Kim, Yangdo

    2012-02-01

    Silicon quantum dot superlattice was fabricated by alternating deposition of silicon rich nitride (SRN) and Si3N4 layers using RF magnetron co-sputtering. Samples were then annealed at temperatures between 800 and 1,100 degrees C and characterized by grazing incident X-ray diffraction (GIXRD), transmission electron microscopy (TEM), Raman spectroscopy, and Fourier transform infrared spectroscopy (FTIR). GIXRD and Raman analyses show that the formation of silicon quantum dots occurs with annealing above 1,100 degrees C for at least 60 minutes. As the annealing time increased the crystallization of silicon quantum dots was also increased. TEM images clearly showed SRN/Si3N4 superlattice structure and silicon quantum dots formation in SRN layers after annealing at 1,100 degrees C for more than 60 minutes. The changes in FTIR transmission spectra observed with annealing condition corresponded to the configuration of Si-N bonds. Crystallization of silicon quantum dots in a silicon nitride matrix started stabilizing after 60 minutes' annealing and approached completion after 120 minutes'. The systematic investigation of silicon quantum dots in a silicon nitride matrix and their properties for solar cell application are presented.

  17. Thermodynamics of silicon nitridation - Effect of hydrogen

    NASA Technical Reports Server (NTRS)

    Shaw, N. J.; Zeleznik, F. J.

    1982-01-01

    Equilibrium compositions for the nitridization of Si were calculated to detect the effectiveness of H2 in removal of the oxide film and in increasing the concentration of SiO and reducing the proportions of O2. Gibbs free energy for the formation of SiN2O was computed above 1685 K, and at lower temperatures. The thermodynamic properties of SiN2O2 were then considered from 1000-3000 K, taking into account the known thermodynamic data for 39 molecular combinations of the Si, Ni, and O. The gases formed were assumed ideal mixtures with pure phase condensed species. The mole fractions were obtained for a system of SiO2 with each Si particle covered with a thin layer of SiO2 before nitridation, and a system in which the nitriding atmosphere had access to the Si. The presence of H2 was determined to enhance the removal of NiO2 in the first system, decrease the partial pressure of O2, increase the partial pressures of SiO, Si, H2O, NH3, and SiH4, while its effects were negligible in the Si system.

  18. Silicon Nitride: A Synthetic Mineral for Vertebrate Biology.

    PubMed

    Pezzotti, Giuseppe; McEntire, Bryan J; Bock, Ryan; Boffelli, Marco; Zhu, Wenliang; Vitale, Eleonora; Puppulin, Leonardo; Adachi, Tetsuya; Yamamoto, Toshiro; Kanamura, Narisato; Bal, B Sonny

    2016-08-19

    The remarkable stoichiometric flexibility of hydroxyapatite (HAp) enables the formation of a variety of charged structural sites at the material's surface which facilitates bone remodeling due to binding of biomolecule moieties in zwitterionic fashion. In this paper, we report for the first time that an optimized biomedical grade silicon nitride (Si3N4) demonstrated cell adhesion and improved osteoconductivity comparable to highly defective, non-stoichiometric natural hydroxyapatite. Si3N4's zwitterionic-like behavior is a function of the dualism between positive and negative charged off-stoichiometric sites (i.e., N-vacancies versus silanols groups, respectively). Lattice defects at the biomaterial's surface greatly promote interaction with positively- and negatively-charged functional groups in biomolecules, and result in the biologically effective characteristics of silicon nitride. These findings are anticipated to be a starting point for further discoveries of therapeutic bone-graft substitute materials.

  19. Silicon Nitride: A Synthetic Mineral for Vertebrate Biology

    PubMed Central

    Pezzotti, Giuseppe; McEntire, Bryan J.; Bock, Ryan; Boffelli, Marco; Zhu, Wenliang; Vitale, Eleonora; Puppulin, Leonardo; Adachi, Tetsuya; Yamamoto, Toshiro; Kanamura, Narisato; Bal, B. Sonny

    2016-01-01

    The remarkable stoichiometric flexibility of hydroxyapatite (HAp) enables the formation of a variety of charged structural sites at the material’s surface which facilitates bone remodeling due to binding of biomolecule moieties in zwitterionic fashion. In this paper, we report for the first time that an optimized biomedical grade silicon nitride (Si3N4) demonstrated cell adhesion and improved osteoconductivity comparable to highly defective, non-stoichiometric natural hydroxyapatite. Si3N4’s zwitterionic-like behavior is a function of the dualism between positive and negative charged off-stoichiometric sites (i.e., N-vacancies versus silanols groups, respectively). Lattice defects at the biomaterial’s surface greatly promote interaction with positively- and negatively-charged functional groups in biomolecules, and result in the biologically effective characteristics of silicon nitride. These findings are anticipated to be a starting point for further discoveries of therapeutic bone-graft substitute materials. PMID:27539146

  20. Silicon Nitride: A Synthetic Mineral for Vertebrate Biology

    NASA Astrophysics Data System (ADS)

    Pezzotti, Giuseppe; McEntire, Bryan J.; Bock, Ryan; Boffelli, Marco; Zhu, Wenliang; Vitale, Eleonora; Puppulin, Leonardo; Adachi, Tetsuya; Yamamoto, Toshiro; Kanamura, Narisato; Bal, B. Sonny

    2016-08-01

    The remarkable stoichiometric flexibility of hydroxyapatite (HAp) enables the formation of a variety of charged structural sites at the material’s surface which facilitates bone remodeling due to binding of biomolecule moieties in zwitterionic fashion. In this paper, we report for the first time that an optimized biomedical grade silicon nitride (Si3N4) demonstrated cell adhesion and improved osteoconductivity comparable to highly defective, non-stoichiometric natural hydroxyapatite. Si3N4’s zwitterionic-like behavior is a function of the dualism between positive and negative charged off-stoichiometric sites (i.e., N-vacancies versus silanols groups, respectively). Lattice defects at the biomaterial’s surface greatly promote interaction with positively- and negatively-charged functional groups in biomolecules, and result in the biologically effective characteristics of silicon nitride. These findings are anticipated to be a starting point for further discoveries of therapeutic bone-graft substitute materials.

  1. Silicon nitride hybrid bearing fatigue life comparisons. Technical report

    SciTech Connect

    Robinson, E.

    1999-01-15

    Research to improve high-speed ball bearings for spacecraft applications has led to development of ceramic materials for bearing components, and the need to acquire sufficient fatigue life data to show the merits of various ceramic materials and fabrication processes, in comparison with the vast amount of steel bearing fatigue data acquired over many decades. In order to eliminate bias from such evaluations it is best to conduct comparative fatigue tests with steel bearings that are geometrically similar and in the same type of test rig. This report addresses some recent fatigue tests of hybrid bearings with silicon nitride (Si{sub 3}N{sub 4}) balls and Crucible Steel Company M62 steel raceways and a comparison set of all 52100 steel bearings. Results indicate that the bearings with ceramic (silicon nitride) balls are superior to the steel bearings.

  2. Synthesis of silicon nitride particles in pulsed Rf plasmas

    SciTech Connect

    Buss, R.J.; Babu, S.V.

    1995-11-01

    Silicon nitride (hydrogenated) particles are synthesized using a pulsed 13.56 Mhz glow discharge. The plasma is modulated with a square-wave on/off cycle of varying period to study the growth kinetics. In situ laser light scattering and ex situ particle analysis are used to study the nucleation and growth. For SiH{sub 4}/Ar and SiH{sub 4}/NH{sub 3} plasmas, an initial very rapid growth phase is followed by slower growth, approaching the rate of thin film deposition on adjacent flat surfaces. The average particle size can be controlled in the 10-100 nm range by adjusting the plasma-on time. The size dispersion of the particles is large and is consistent with a process of continuous nucleation during the plasma-on period. The large polydispersity is also reported for silicon particles from silane and differs from that reported in other laboratories. The silicon nitride particle morphology is compared to that of silicon and silicon carbide particles generated by the same technique. Whereas Si particles appear as rough clusters of smaller subunits, the SiC particles are smooth spheres, and the Si{sub 3}N{sub 4} particles are smooth but non-spherical. Post-plasma oxidation kinetics of the particles are studied with FTIR and are consistent with a hydrolysis mechanism proposed in earlier work with continuous plasmas. Heat treatment of the powder in an ammonia atmosphere results in the elimination of hydrogen, rendering the silicon nitride resistant to atmospheric oxidation.

  3. Fatigue life of high-speed ball bearings with silicon nitride balls

    NASA Technical Reports Server (NTRS)

    Parker, R. J.; Zaretsky, E. V.

    1974-01-01

    Evaluation of hot-pressed silicon nitride as a rolling-element bearing material. Two grades of hot-pressed silicon nitride balls were tested under rolling contact conditions in a five-ball fatigue tester. A digital computer program was used to predict the dynamic performance characteristics and fatigue life of high-speed ball bearings with silicon nitride balls relative to that with bearings containing steel balls. The results obtained include the finding that fatigue spalls on silicon nitride balls are similar in appearance to those obtained with typical bearing steels.

  4. Corrosion of silicon nitride in high temperature alkaline solutions

    NASA Astrophysics Data System (ADS)

    Qiu, Liyan; Guzonas, Dave A.; Qian, Jing

    2016-08-01

    The corrosion of silicon nitride (Si3N4) in alkaline solutions was studied at temperatures from 60 to 300 °C. Si3N4 experienced significant corrosion above 100 °C. The release rates of silicon and nitrogen follow zero order reaction kinetics and increase with increasing temperature. The molar ratio of dissolved silicon and nitrogen species in the high temperature solutions is the same as that in the solid phase (congruent dissolution). The activation energy for silicon and nitrogen release rates is 75 kJ/mol which agrees well with that of silica dissolution. At 300 °C, the release of aluminum is observed and follows first order reaction kinetics while other minor constituents including Ti and Y are highly enriched on the corrosion films due to the low solubility of their oxides.

  5. Physical properties of memory quality PECVD silicon nitride

    NASA Astrophysics Data System (ADS)

    Khaliq, M. A.; Shams, Q. A.; Brown, W. D.; Naseem, H. A.

    1988-09-01

    Memory-quality silicon nitride has been deposited using plasma-enhanced chemical vapor deposition (PECVD). Film composition was varied by controlling the nitrogen concentration of the reactant gases. The effects of the source and content of the nitriding agent on the physical properties of the film were studied using ellipsometry and ultraviolet (UV), fourier transform infrared (FTIR) and Auger electron spectroscopy. Refractive index of the films varied from 1.77 to 1.95 corresponding to Si/N ratios of 0.75 to 1.03. Ultraviolet spectroscopy yielded band edge values of 4.9 to 2.2 eV depending on the Si/N ratio. Window size, endurance and retention performance is comparable to that reported for both atmospheric- and low-pressure chemical vapor deposited films. A strong correlation between the Si-H bond concentration and the memory performance was observed. Although some excess silicon in the film is needed for memory operation in a metal-nitride-oxide-silicon (MNOS) structure, excessive amounts result in low breakdown fields, small memory windows and poor retention characteristics.

  6. Catalytic Effects of Cr on Nitridation of Silicon and Formation of One-dimensional Silicon Nitride Nanostructure

    PubMed Central

    Liang, Feng; Lu, Lilin; Tian, Liang; Li, Faliang; Zhang, Haijun; Zhang, Shaowei

    2016-01-01

    The catalytic effects of chromium (Cr) on the direct nitridation of silicon (Si) and morphology of nitridation product were investigated. Cr dramatically improved the conversation of Si to silicon nitride (Si3N4). The complete conversion was achieved at 1350 °C upon addition of 1.25 wt% Cr. This temperature was much lower than that required in the case without using a catalyst. Meanwhile, Cr played an important role in the in-situ growth of one-dimensional (1-D) α-Si3N4 nanostructures. α-Si3N4 nanowires and nanobelts became the primary product phases when 5 wt% Cr was used as the catalyst. The growth processes of the 1-D α-Si3N4 nanostructures were governed by the vapor-solid mechanism. First-principle calculations suggest that electrons can be transferred from Cr atoms to N atoms, facilitating the Si nitridation. PMID:27527681

  7. Subcritical crack-growth behavior in advanced silicon nitride ceramics

    NASA Astrophysics Data System (ADS)

    Bhatnagar, Ajay

    Advanced silicon nitride ceramics (Sisb3Nsb4) are leading candidates for structural components in gas turbine and reciprocating engines. However, widespread use of these materials has been deterred due to their low fracture toughness under tensile loads. In the last decade, novel processing techniques have allowed extrinsic toughening of this material through grain bridging processes. The extrinsic toughening mechanisms, however, are prone to subcritical crack-growth processes through environmental, mechanical and high temperature degradation mechanisms. Understanding these failure mechanisms is critical for long term reliability and design. In the first part of this study, fracture and environmentally-assisted subcritical crack-growth processes were examined in bulk Y-Si-Al-O-N oxynitride glasses with compositions typical of the grain boundary phase of silicon nitride ceramics. Both long crack as well as short crack behavior were investigated to establish a reliable fracture toughness value and to elucidate the anomalous densification behavior of the oxynitride glass under indentation loads. Environmentally assisted subcritical crack-growth processes were studied in inert, moist and wet environments under both cyclic and static loading conditions and compared to commercial soda lime and borosilicate glasses. The second part of this study involved the effect of loading, microstructure and temperature on subcritical crack-growth behavior in silicon nitride ceramics. Crack-growth rates under an alternating applied stress intensity were compared to those under static loads. The effect of microstructure on fatigue crack-growth rates was determined in silicon nitrides sintered using different processing techniques and with different grain sizes. Unique experimental techniques were used to determine subcritical crack-growth behavior from room temperature to elevated temperatures of 1250sp°C. Frictional wear models were used to explain the trends in experimental data at

  8. Deep-UV nitride-on-silicon microdisk lasers

    PubMed Central

    Sellés, J.; Brimont, C.; Cassabois, G.; Valvin, P.; Guillet, T.; Roland, I.; Zeng, Y.; Checoury, X.; Boucaud, P.; Mexis, M.; Semond, F.; Gayral, B.

    2016-01-01

    Deep ultra-violet semiconductor lasers have numerous applications for optical storage and biochemistry. Many strategies based on nitride heterostructures and adapted substrates have been investigated to develop efficient active layers in this spectral range, starting with AlGaN quantum wells on AlN substrates and more recently sapphire and SiC substrates. Here we report an efficient and simple solution relying on binary GaN/AlN quantum wells grown on a thin AlN buffer layer on a silicon substrate. This active region is embedded in microdisk photonic resonators of high quality factors and allows the demonstration of a deep ultra-violet microlaser operating at 275 nm at room temperature under optical pumping, with a spontaneous emission coupling factor β = (4 ± 2) 10−4. The ability of the active layer to be released from the silicon substrate and to be grown on silicon-on-insulator substrates opens the way to future developments of nitride nanophotonic platforms on silicon. PMID:26887701

  9. Silicon nitride for lightweight stiff structures for optical instruments

    NASA Astrophysics Data System (ADS)

    Berroth, Karl; Devilliers, Christophe; Luichtel, Georg

    2009-08-01

    Due to their very specific set of material properties, silicon nitride and silicon carbide have gained a lot of interest in the last 20 years. Moreover, many new approaches in technical equipment and processes were enabled with corresponding research and production activities. Also large efforts were made at FCT during the last years, to get able to supply even very large and complex shaped components made of sintered silicon carbide (SSiC) and of gas pressure sintered silicon nitride (GPSN) ceramics. This approach has opened new applications and markets for such ceramic materials. On the other side, designers and engineers are now allowed to think much more complex in designing of ceramic components. In this paper, a new rapid prototyping routine for very complex components as well as the corresponding materials will be presented. Components for optical equipment in innovative avionic and space applications, and more conventional technologies are described. Not only their unique key intrinsic properties, like high Youngs Modulus, very low CTE, very high strength and fracture toughness for a ceramic but also newly developed and adopted shaping, sintering and machining technologies in both green and sintered state have let to highly valued products. This enabled FCT to offer Carl Zeiss Optronics using silicon nitride for a newly designed, very complex housing structure of an avionic pod camera. Due to a very low CTE, high stiffness and less weight, an improved performance was reached. Also Thales Alenia Space is engaged since some years in activities to develop and qualify Silicon nitride ceramics for space projects. Extremely stiff, very lightweight and large truss space structures with a very low CTE, high rigidity and no outgasing for satellites can now be realized. Deep tests sequence has been performed to qualify truss beams and end fittings made in the same material. Also advanced dynamic testing equipment for avionic turbine blades requires new approaches. In

  10. Thermally annealed silicon nitride films: Electrical characteristics and radiation effects

    SciTech Connect

    Stein, H.J.

    1985-03-15

    Electrical characteristics, including retention under /sup 60/Co ..gamma..-ray irradiation of MNOS (metal-nitride-oxide-semiconductor) structures with LPCVD (low-pressure chemical-vapor-deposited) silicon nitride have been investigated. Capacitance-voltage techniques were used to measure injected, retained, and equilibrium charge. Current-voltage techniques were used to measure voltage and temperature dependence of charge transport. Measurements were made on MNOS with the following nitride annealing histories: (1) as-deposited at 750 /sup 0/C, (2) 950 /sup 0/C in N/sub 2/, and (3) 950 /sup 0/C in N/sub 2/ followed by 900 /sup 0/C in H/sub 2/. Internal IR reflection techniques were used to measure chemically bonded hydrogen in the nitride films. Annealing at 950 /sup 0/C in N/sub 2/ (1) decreased the concentration of hydrogen, (2), decreased equilibrium positive charge, and (3) increased low- and high-field transport. Partial restoration of the as-deposited characteristics was achieved by subsequent annealing in H/sub 2/ at 900 /sup 0/C. Charge loss (retention) under /sup 60/Co ..gamma..-ray irradiation is essentially independent of high-temperature annealing whereas degradation is observed for net negative charge retention measured in the absence of ionizing radiation. Effects of annealing on MNOS structures and models to explain the results are discussed.

  11. Thermally annealed silicon nitride films: Electrical characteristics and radiation effects

    NASA Astrophysics Data System (ADS)

    Stein, Herman J.

    1985-03-01

    Electrical characteristics, including retention under 60Co γ-ray irradiation of MNOS (metal-nitride-oxide-semiconductor) structures with LPCVD (low-pressure chemical-vapor-deposited) silicon nitride have been investigated. Capacitance-voltage techniques were used to measure injected, retained, and equilibrium charge. Current-voltage techniques were used to measure voltage and temperature dependence of charge transport. Measurements were made on MNOS with the following nitride annealing histories: (1) as-deposited at 750 °C, (2) 950 °C in N2, and (3) 950 °C in N2 followed by 900 °C in H2. Internal IR reflection techniques were used to measure chemically bonded hydrogen in the nitride films. Annealing at 950 °C in N2 (1) decreased the concentration of hydrogen, (2), decreased equilibrium positive charge, and (3) increased low- and high-field transport. Partial restoration of the as-deposited characteristics was achieved by subsequent annealing in H2 at 900 °C. Charge loss (retention) under 60Co γ-ray irradiation is essentially independent of high-temperature annealing whereas degradation is observed for net negative charge retention measured in the absence of ionizing radiation. Effects of annealing on MNOS structures and models to explain the results are discussed.

  12. Development of silicon nitride composites with continuous fiber reinforcement

    SciTech Connect

    Starr, T.L.; Mohr, D.L.; Lackey, W.J.; Hanigofsky, J.A.

    1993-10-01

    The composites were fabricated using ultrafine Si powders prepared by attritor milling; the powders exhibits full conversion to Si nitride in < 3 h at {le} 1200 C (these conditions reduce degradation of the fibers compared to conventional). Effects of processing conditions on fiber properties and the use of fiber coatings to improve stability during processing as well as change the fiber-matrix interfacial properties were investigated. A duplex carbon-silicon carbide coating, deposited by CVD, reduced fiber degradation in processing, and it modified the fiber-matrix adhesion. Si nitride matrix composites were fabricated using reaction sintering, forming laminates, filament-wound plates, and tubes. In each case, an attritor milled Si powder slurry is infiltrated into ceramic fiber preforms or tows, which are then assembled to form a 3-D structure for reaction sintering. The resulting composites have properties comparable to chemical vapor infiltration densified composites, with reasonable strengths and graceful composite fracture behavior.

  13. Current-dependent growth of silicon nitride lines using a conducting tip AFM

    NASA Astrophysics Data System (ADS)

    Workman, R. K.; Peterson, C. A.; Sarid, D.

    1999-03-01

    The measurement of a picoamp current accompanying silicon nitride line growth in an ammonia atmosphere, using a conducting tip atomic force microscope, is reported for the first time. The observed total charge per nanolithographed volume is found to be consistent with a process where the reduction of H + ions belonging to the ammonia gives rise to the nitridation of the silicon substrate.

  14. RF-sputtered silicon and hafnium nitrides - Properties and adhesion to 440C stainless steel

    NASA Technical Reports Server (NTRS)

    Grill, A.; Aron, P. R.

    1983-01-01

    Silicon nitride and hafnium nitride coatings were deposited by reactive RF sputtering on oxidized and unoxidized 440C stainless steel substrates. Sputtering was done in mixtures of argon and nitrogen gases from pressed powder silicon nitride and from hafnium metal targets. Depositions were at two background pressures, 8 and 20 mtorr, and at two different fractions (f) of nitrogen in argon, 0.25 and 0.60, for hafnium nitride and at f = 0.25 for silicon nitride. The coatings and the interface between the coating and substrates were investigated by X-ray diffractometry, scanning electron microscopy, energy dispersive X-ray analysis and Auger electron spectroscopy. A Knoop microhardness of 1650 + or 100 kg/sq mm was measured for hafnium nitride and 3900 + or 500 kg/sq mm for silicon nitride. The friction coefficients between a 440C rider and the coatings were measured under lubricated conditions. Scratch test results demonstrate that the adhesion of hafnium nitride to both oxidized and unoxidized 440C is superior to that of silicon nitride. Oxidized 440C is found to have increased adhesion, to both nitrides, over that of unoxidized 440C.

  15. Etching and Chemical Control of the Silicon Nitride Surface.

    PubMed

    Brunet, Marine; Aureau, Damien; Chantraine, Paul; Guillemot, François; Etcheberry, Arnaud; Gouget-Laemmel, Anne Chantal; Ozanam, François

    2017-01-25

    Silicon nitride is used for many technological applications, but a quantitative knowledge of its surface chemistry is still lacking. Native oxynitride at the surface is generally removed using fluorinated etchants, but the chemical composition of surfaces still needs to be determined. In this work, the thinning (etching efficiency) of the layers after treatments in HF and NH4F solutions has been followed by using spectroscopic ellipsometry. A quantitative estimation of the chemical bonds found on the surface is obtained by a combination of infrared absorption spectroscopy in ATR mode, X-ray photoelectron spectroscopy, and colorimetry. Si-F bonds are the majority species present at the surface after silicon nitride etching; some Si-OH and a few Si-NHx bonds are also present. No Si-H bonds are present, an unfavorable feature for surface functionalization in view of the interest of such mildly reactive groups for achieving stable covalent grafting. Mechanisms are described to support the experimental results, and two methods are proposed for generating surface SiH species: enriching the material in silicon, or submitting the etched surface to a H2 plasma treatment.

  16. Rolling-element fatigue life of silicon nitride balls: Preliminary test results

    NASA Technical Reports Server (NTRS)

    Parker, R. J.; Zaretsky, E. V.

    1972-01-01

    Hot pressed silicon nitride was evaluated as a rolling element bearing material. The five-ball fatigue tester was used to test 12.7 mm (0.500 in.) diameter balls at a maximum Hertz stress of 800,000 psi at a race temperature of 130 F. The fatigue spalls in the silicon nitride resembled those in typical bearing steels. The ten-percent fatigue life of the silicon nitride balls was approximately one-eighth to one-fifth that of typical bearing steels (52100 and M-50). The load capacity of the silicon nitride was approximately one-third that of typical bearing steels. The load capacity of the silicon nitride was significantly higher than previously tested ceramic materials for rolling element bearings.

  17. Surface Area, and Oxidation Effects on Nitridation Kinetics of Silicon Powder Compacts

    NASA Technical Reports Server (NTRS)

    Bhatt, R. T.; Palczer, A. R.

    1998-01-01

    Commercially available silicon powders were wet-attrition-milled from 2 to 48 hr to achieve surface areas (SA's) ranging from 1.3 to 70 sq m/g. The surface area effects on the nitridation kinetics of silicon powder compacts were determined at 1250 or 1350 C for 4 hr. In addition, the influence of nitridation environment, and preoxidation on nitridation kinetics of a silicon powder of high surface area (approximately equals 63 sq m/g) was investigated. As the surface area increased, so did the percentage nitridation after 4 hr in N2 at 1250 or 1350 C. Silicon powders of high surface area (greater than 40 sq m/g) can be nitrided to greater than 70% at 1250 C in 4 hr. The nitridation kinetics of the high-surface-area powder compacts were significantly delayed by preoxidation treatment. Conversely, the nitridation environment had no significant influence on the nitridation kinetics of the same powder. Impurities present in the starting powder, and those accumulated during attrition milling, appeared to react with the silica layer on the surface of silicon particles to form a molten silicate layer, which provided a path for rapid diffusion of nitrogen and enhanced the nitridation kinetics of high surface area silicon powder.

  18. Nanostructured silicon nitride from wheat and rice husks

    NASA Astrophysics Data System (ADS)

    Qadri, S. B.; Rath, B. B.; Gorzkowski, E. P.; Wollmershauser, J. A.; Feng, C. R.

    2016-04-01

    Nanoparticles, submicron-diameter tubes, and rods of Si3N4 were synthesized from the thermal treatment of wheat and rice husks at temperatures at and above 1300 °C in a nitrogen atmosphere. The whole pattern Rietveld analysis of the observed diffraction data from treatments at 1300 °C showed the formation of only hexagonal α-phase of Si3N4 with an R-factor of 1%, whereas samples treated at 1400 °C and above showed both α- and β-phases with an R-factor of 2%. Transmission electron microscopy showed the presence of tubes, rods, and nanoparticles of Si3N4. In a two-step process, where pure SiC was produced first from rice or wheat husk in an argon atmosphere and subsequently treated in a nitrogen atmosphere at 1450 °C, a nanostructured composite material having α- and β-phases of Si3N4 combined with cubic phase of SiC was formed. The thermodynamics of the formation of silicon nitride is discussed in terms of the solid state reaction between organic matter (silica content), which is inherently present in the wheat and rice husks, with the nitrogen from the furnace atmosphere. Nanostructures of silicon nitride formed by a single direct reaction or their composites with SiC formed in a two-step process of agricultural byproducts provide an uncomplicated sustainable synthesis route for silicon nitride used in mechanical, biotechnology, and electro-optic nanotechnology applications.

  19. Dynamic and static fatigue behavior of sintered silicon nitrides

    NASA Technical Reports Server (NTRS)

    Chang, J.; Khandelwal, P.; Heitman, P. W.

    1987-01-01

    The dynamic and static fatigue behavior of Kyocera SN220M sintered silicon nitride at 1000 C was studied. Fractographic analysis of the material failing in dynamic fatigue revealed the presence of slow crack growth (SCG) at stressing rates below 41 MPa/min. Under conditions of static fatigue this material also displayed SCG at stresses below 345 MPa. SCG appears to be controlled by microcracking of the grain boundaries. The crack velocity exponent (n) determined from both dynamic and static fatigue tests ranged from 11 to 16.

  20. Processing and testing of high toughness silicon nitride ceramics

    NASA Technical Reports Server (NTRS)

    Tikare, Veena; Sanders, William A.; Choi, Sung R.

    1993-01-01

    High toughness silicon nitride ceramics were processed with the addition of small quantities of beta-Si3N4 whiskers in a commercially available alpha-Si3N4 powder. These whiskers grew preferentially during sintering resulting in large, elongated beta-grains, which acted to toughen the matrix by crack deflection and grain pullout. The fracture toughness of these samples seeded with beta-Si3N4 whiskers ranged from 8.7 to 9.5 MPa m(exp 0.5) depending on the sintering additives.

  1. Oxidation Protection of Porous Reaction-Bonded Silicon Nitride

    NASA Technical Reports Server (NTRS)

    Fox, D. S.

    1994-01-01

    Oxidation kinetics of both as-fabricated and coated reaction-bonded silicon nitride (RBSN) were studied at 900 and 1000 C with thermogravimetry. Uncoated RBSN exhibited internal oxidation and parabolic kinetics. An amorphous Si-C-O coating provided the greatest degree of protection to oxygen, with a small linear weight loss observed. Linear weight gains were measured on samples with an amorphous Si-N-C coating. Chemically vapor deposited (CVD) Si3N4 coated RBSN exhibited parabolic kinetics, and the coating cracked severely. A continuous-SiC-fiber-reinforced RBSN composite was also coated with the Si-C-O material, but no substantial oxidation protection was observed.

  2. High-Q gold and silicon nitride bilayer nanostrings

    NASA Astrophysics Data System (ADS)

    Biswas, T. S.; Suhel, A.; Hauer, B. D.; Palomino, A.; Beach, K. S. D.; Davis, J. P.

    2012-08-01

    Low-mass, high-Q, silicon nitride nanostrings are at the cutting edge of nanomechanical devices for sensing applications. Here we show that the addition of a chemically functionalizable gold overlayer does not adversely affect the Q of the fundamental out-of-plane mode. Instead the device retains its mechanical responsiveness while gaining sensitivity to molecular bonding. Furthermore, differences in thermal expansion within the bilayer give rise to internal stresses that can be electrically controlled. In particular, an alternating current (AC) excites resonant motion of the nanostring. This AC thermoelastic actuation is simple, robust, and provides an integrated approach to sensor actuation.

  3. Investigation of silicon surface passivation by silicon nitride film deposition

    NASA Technical Reports Server (NTRS)

    Olsen, L. C.

    1984-01-01

    The use of Sin sub x grown by plasma enhanced chemical vapor deposition (PECVO) for passivating silicon surfaces was studied. The application of PECVO SiN sub x films for passivations of silicon N+/P or P+/N solar cells is of particular interest. This program has involved the following areas of investigation: (1) Establishment of PECVO system and development of procedures for growth of SiN sub x; (2) Optical characterization of SiN sub x films; (3) Characterization of the SiN sub x/Si interface; (4) Surface recombination velocity deduced from photoresponse; (5) Current-Voltage analyses of silicon N+/P cells; and (6) Gated diode device studies.

  4. Guided photoluminescence study of Nd-doped silicon rich silicon oxide and silicon rich silicon nitride waveguides

    NASA Astrophysics Data System (ADS)

    Pirasteh, Parastesh; Charrier, Joël; Dumeige, Yannick; Doualan, Jean-Louis; Camy, Patrice; Debieu, Olivier; Liang, Chuan-hui; Khomenkova, Larysa; Lemaitre, Jonathan; Boucher, Yann G.; Gourbilleau, Fabrice

    2013-07-01

    Planar waveguides made of Nd3+-doped silicon rich silicon oxide (SRSO) and silicon rich silicon nitride (SRSN) have been fabricated by reactive magnetron sputtering and characterized with special emphasis on the comparison of the guided photoluminescence (PL) properties of these two matrices. Guided fluorescence excited by top surface pumping at 488 nm on planar waveguides was measured as a function of the distance between the excitation area and the output of the waveguide, as well as a function of the pump power density. The PL intensity increased linearly with pump power without any saturation even at high power. The linear intensity increase of the Nd3+ guided PL under a non-resonant excitation (488 nm) confirms the efficient coupling between either Si-np and rare-earth ions for SRSO or radiative defects and rare earth ions for SRSN. The guided fluorescences at 945 and 1100 nm were observed until 4 mm and 8 mm of the output of the waveguide for Nd3+ doped SRSO and SRSN waveguides, respectively. The guided fluorescence decays of Nd3+-doped-SRSO and -SRSN planar waveguides have been measured and found equal to 97 μs ±7 and 5 μs ± 2, respectively. These results show notably that the Nd3+-doped silicon rich silicon oxide is a very promising candidate on the way to achieve a laser cavity at 1.06 μm.

  5. Reciprocating sliding wear of in-situ reinforced silicon nitride

    SciTech Connect

    Yust, C.S.

    1995-10-01

    The reciprocating sliding wear response of two in-situ reinforced-silicon nitride compositions provided by AlliedSignal have been evaluated. The materials were prepared by AlliedSignal-Ceramic Components Division and were tested at conditions of interest to the Bendix Engine Controls Division (South Bend, IN) and AlliedSignal Research and Technology (Des Plaines, IL). The materials are being considered for a variety of new applications, and the current tests provide critical friction and wear values under anticipated operating conditions. Both pin and disk specimens of GS-44 and GN-10 in-situ reinforced silicon nitride of specified dimensions for wear testing were provided by the AlliedSignal participants. An initial series of tests examined the unlubricated behavior of these materials at elevated temperature (up to 900 C) in an inert atmosphere. The results revealed excessive levels of both friction and wear in the unlubricated condition. The test conditions were modified to include the use of jet fuel as a lubricant because of an intended application in that medium. The introduction of the lubricant resulted in very limited wear of both the pin and disk specimens.

  6. Thermal properties of silicon nitride beams below 1 Kelvin.

    SciTech Connect

    Wang, G.; Yefremenko, V.; Novosad, V.; Datesman, A.; Pearson, J.; Shustakova, G.; Divan, R.; Chang, C.; McMahon, J.; Bleem, L.; Crites, A. T.; Downes, T.; Mehl, J.; Meyer, S. S.; Carlstrom, J. E.; Univ. of Chicago

    2010-01-01

    We have investigated the thermal transport of long, narrow beams of silicon nitride at cryogenic temperatures. Simultaneously employing a superconducting Transition Edge Sensor (TES) as both a heater and a sensor, we measured the thermal conductance of 1 {micro}m thick silicon nitride beams of different lateral dimensions. Based upon these measurements, we calculate the thermal parameters of the beams. We utilize a boundary limited phonon scattering model and assume the phonon mean free path to be temperature independent in the calculation. In the temperature range from 300 mK to 530 mK, the following results are obtained for 20 (30) {micro}m beams: the volume heat capacity is 0.083 T+0.509 T{sup 3} J/m{sup 3}-K, the width dependent phonon mean free path is 9.60 (11.05) {micro}m, and the width dependent thermal conductivity is 5.60 x 10{sup -3} T+3.41 x 10{sup -2} T{sup 3} (6.50 x 10{sup -3} T+3.93 x 10{sup -2} T{sup 3}) W/m-K.

  7. Advanced optical modelling of dynamically deposited silicon nitride layers

    NASA Astrophysics Data System (ADS)

    Borojevic, N.; Hameiri, Z.; Winderbaum, S.

    2016-07-01

    Dynamic deposition of silicon nitrides using in-line plasma enhanced chemical vapor deposition systems results in non-uniform structure of the dielectric layer. Appropriate analysis of such layers requires the optical characterization to be performed as a function of the layer's depth. This work presents a method to characterize dynamically deposited silicon nitride layers. The method is based on the fitting of experimental spectroscopic ellipsometry data via grading of Tauc-Lorentz optical parameters through the depth of the layer. When compared with the standard Tauc-Lorentz fitting procedure, used in previous studies, the improved method is demonstrating better quality fits to the experimental data and revealing more accurate optical properties of the dielectric layers. The most significant advantage of the method is the ability to extract the depth profile of the optical properties along the direction of the layer normal. This is enabling a better understanding of layers deposited using dynamic plasma enhanced chemical vapor deposition systems frequently used in the photovoltaic industry.

  8. Si-rich Silicon Nitride for Nonlinear Signal Processing Applications.

    PubMed

    Lacava, Cosimo; Stankovic, Stevan; Khokhar, Ali Z; Bucio, T Dominguez; Gardes, F Y; Reed, Graham T; Richardson, David J; Petropoulos, Periklis

    2017-12-01

    Nonlinear silicon photonic devices have attracted considerable attention thanks to their ability to show large third-order nonlinear effects at moderate power levels allowing for all-optical signal processing functionalities in miniaturized components. Although significant efforts have been made and many nonlinear optical functions have already been demonstrated in this platform, the performance of nonlinear silicon photonic devices remains fundamentally limited at the telecom wavelength region due to the two photon absorption (TPA) and related effects. In this work, we propose an alternative CMOS-compatible platform, based on silicon-rich silicon nitride that can overcome this limitation. By carefully selecting the material deposition parameters, we show that both of the device linear and nonlinear properties can be tuned in order to exhibit the desired behaviour at the selected wavelength region. A rigorous and systematic fabrication and characterization campaign of different material compositions is presented, enabling us to demonstrate TPA-free CMOS-compatible waveguides with low linear loss (~1.5 dB/cm) and enhanced Kerr nonlinear response (Re{γ} = 16 Wm(-1)). Thanks to these properties, our nonlinear waveguides are able to produce a π nonlinear phase shift, paving the way for the development of practical devices for future optical communication applications.

  9. Mid-infrared optical properties of thin films of aluminum oxide, titanium dioxide, silicon dioxide, aluminum nitride, and silicon nitride.

    PubMed

    Kischkat, Jan; Peters, Sven; Gruska, Bernd; Semtsiv, Mykhaylo; Chashnikova, Mikaela; Klinkmüller, Matthias; Fedosenko, Oliana; Machulik, Stephan; Aleksandrova, Anna; Monastyrskyi, Gregorii; Flores, Yuri; Masselink, W Ted

    2012-10-01

    The complex refractive index components, n and k, have been studied for thin films of several common dielectric materials with a low to medium refractive index as functions of wavelength and stoichiometry for mid-infrared (MIR) wavelengths within the range 1.54-14.29 μm (700-6500 cm(-1)). The materials silicon oxide, silicon nitride, aluminum oxide, aluminum nitride, and titanium oxide are prepared using room temperature reactive sputter deposition and are characterized using MIR variable angle spectroscopic ellipsometry. The investigation shows how sensitive the refractive index functions are to the O2 and N2 flow rates, and for which growth conditions the materials deposit homogeneously. It also allows conclusions to be drawn on the degree of amorphousness and roughness. To facilitate comparison of the materials deposited in this work with others, the index of refraction was also determined and provided for the near-IR and visible ranges of the spectrum. The results presented here should serve as a useful information base for designing optical coatings for the MIR part of the electromagnetic spectrum. The results are parameterized to allow them to be easily used for coating design.

  10. Determination of Yttrium in High Density Silicon Nitride by Emission and X-Ray Fluorescence Spectroscopy.

    DTIC Science & Technology

    1981-08-01

    AD-AI07 596 ARMY MATERIALS AND MECHANICS RESEARCH CENTER WATERTOWN MA F/S 7/4 DETERMINATION OF YTTRIUM IN HIGH DENSITY SILICON NITRIDE BY EMI-ETCIU...AUG Al B H STRAUSS. UNCLASSIFIED AMMRC-TR-Al-39 N AMMRC TR 81-39 A ~LEVEL ’ t’- .- DETERMINATION OF YTTRIUM IN 1 HIGH DENSITY SILICON NITRIDE BY...DETERMINATION OF YTTRIUM IN HIGH DENSITY SILICON NITRIDE BY EMISSION AND X-RAY Final Report FLUORESCENCE SPECTROSCOPY 6 PERFORMING ORG. REPORT NUMBER 7. AUTHOR

  11. Simultaneous electrical and optical readout of graphene-coated high Q silicon nitride resonators

    NASA Astrophysics Data System (ADS)

    Adiga, V. P.; De Alba, R.; Storch, I. R.; Yu, P. A.; Ilic, B.; Barton, R. A.; Lee, S.; Hone, J.; McEuen, P. L.; Parpia, J. M.; Craighead, H. G.

    2013-09-01

    Resonant mechanics of high quality factor (Q) graphene coated silicon nitride devices have been explored using optical and electrical transduction schemes. With the addition of the graphene layer, we retain the desirable mechanical properties of silicon nitride but utilize the electrical and optical properties of graphene to transduce and tune the resonant motion by both optical and electrical means. By positioning the graphene-on-silicon-nitride drums in a tunable optical cavity, we observe position dependent damping and resonant frequency control of the devices due to optical absorption by graphene.

  12. Optical properties of silicon nitride films formed by plasma-chemical vapor deposition

    NASA Astrophysics Data System (ADS)

    Vlasukova, L. A.; Komarov, F. F.; Parkhomenko, I. N.; Milchanin, O. V.; Leont'ev, A. V.; Mudryi, A. V.; Togambaeva, A. K.

    2013-03-01

    The optical properties and structure of layers of silicon nitride deposited on silicon substrates by plasma-aided chemical vapor deposition at 300°C are studied by ellipsometry, Raman scattering, IR spectroscopy, and photoluminescence techniques. It is found that immediately after deposition the silicon nitride contains hydrogen in the form of Si-H bonds. Annealing (1100°C, 30 min) leads to dehydrogenation and densification of the nitride layer. An intense Si3N4 photoluminescence signal is detected in the green. Immediately after deposition the photoluminescence peak appears at 542 nm and annealing shifts it to shorter wavelengths.

  13. Crystallization of the glassy grain boundary phase in silicon nitride ceramics

    NASA Technical Reports Server (NTRS)

    Drummond, Charles H., III

    1991-01-01

    The role was studied of the intergranular glassy phase in silicon nitride as-processed with yttria as a sintering aid. The microstructure, crystallization, and viscosity of the glassy phase were areas studied. Crystallization of the intergranular glassy phase to more refractory crystalline phases should improve the high temperature mechanical properties of the silicon nitride. The addition of a nucleating agent will increase the rate of crystallization. The measurement of the viscosity of the glassy phase will permit the estimation of the high temperature deformation of the silicon nitride.

  14. Elevated temperature mechanical behavior of monolithic and SiC whisker-reinforced silicon nitrides

    NASA Technical Reports Server (NTRS)

    Salem, Jonathan A.; Choi, Sung R.; Sanders, William A.; Fox, Dennis S.

    1991-01-01

    The mechanical behavior of a 30 volume percent SiC whisker reinforced silicon nitride and a similar monolithic silicon nitride were measured at several temperatures. Measurements included strength, fracture toughness, crack growth resistance, dynamic fatigue susceptibility, post oxidation strength, and creep rate. Strength controlling defects were determined with fractographic analysis. The addition of SiC whiskers to silicon nitride did not substantially improve the strength, fracture toughness, or crack growth resistance. However, the fatigue resistance, post oxidation strength, and creep resistance were diminished by the whisker addition.

  15. Thermal and Kerr nonlinear properties of plasma-deposited silicon nitride/ silicon dioxide waveguides.

    PubMed

    Ikeda, Kazuhiro; Saperstein, Robert E; Alic, Nikola; Fainman, Yeshaiahu

    2008-08-18

    We introduce and present experimental evaluations of loss and nonlinear optical response in a waveguide and an optical resonator, both implemented with a silicon nitride/ silicon dioxide material platform prepared by plasma-enhanced chemical vapor deposition with dual frequency reactors that significantly reduce the stress and the consequent loss of the devices. We measure a relatively small loss of approximately 4dB/cm in the waveguides. The fabricated ring resonators in add-drop and all-pass arrangements demonstrate quality factors of Q=12,900 and 35,600. The resonators are used to measure both the thermal and ultrafast Kerr nonlinearities. The measured thermal nonlinearity is larger than expected, which is attributed to slower heat dissipation in the plasma-deposited silicon dioxide film. The n2 for silicon nitride that is unknown in the literature is measured, for the first time, as 2.4 x 10(-15)cm(2)/W, which is 10 times larger than that for silicon dioxide.

  16. Optical properties of V-groove silicon nitride trench waveguides.

    PubMed

    Zhao, Qiancheng; Huang, Yuewang; Boyraz, Ozdal

    2016-09-01

    We numerically investigate the mode properties of the V-groove silicon nitride trench waveguides based on the experimental results. The trench waveguides are suitable for nonlinear applications. By manipulating the waveguide thicknesses, the waveguides can achieve zero dispersion or a maximized nonlinear parameter of 0.219  W-1·m-1 at 1550 nm. Broadband four-wave mixing with a gain of 5.545  m-1 is presented as an example. The waveguides can also be applied in sensing applications with an optimized evanescent intensity ratio. By etching away the top flat slabs, wider trapezoidal trench waveguides can be utilized for plasmonic sensing thanks to their TE fundamental modes.

  17. Soliton repetition rate in a silicon-nitride microresonator.

    PubMed

    Bao, Chengying; Xuan, Yi; Wang, Cong; Jaramillo-Villegas, Jose A; Leaird, Daniel E; Qi, Minghao; Weiner, Andrew M

    2017-02-15

    The repetition rate of a Kerr comb composed of a single soliton in an anomalous group velocity dispersion silicon-nitride microcavity is measured as a function of pump frequency. By comparing operation in the soliton and non-soliton states, the contributions from the Raman soliton self-frequency shift (SSFS) and the thermal effects are evaluated; the SSFS is found to dominate the changes in the repetition rate, similar to silica cavities. The relationship between the changes in the repetition rate and the pump frequency detuning is found to be independent of the nonlinearity coefficient and dispersion of the cavity. Modeling of the repetition rate change by using the generalized Lugiato-Lefever equation is discussed; the Kerr shock is found to have only a minor effect on repetition rate for cavity solitons with duration down to ∼50  fs.

  18. Modeling of a UV laser beam—silicon nitride interaction

    NASA Astrophysics Data System (ADS)

    Dgheim, J. A.

    2016-11-01

    A numerical model is developed to study heat and radiation transfers during the interaction between a UV laser beam and silicon nitride. The laser beam has temporal Gaussian or Gate shapes of a wavelength of 247 nm, with pulse duration of 27 ns. The mathematical model is based on the heat equation coupled to Lambert-Beer relationship by taking into account the conduction, convection and radiation phenomena. The resulting equations are schemed by the finite element method. Comparison with the literature shows qualitative and quantitative agreements. The investigated parameters are the temperature, the timing of the melting process and the melting phase thickness. The effects of the laser fluences, ranging from 500 to 16 000 J.m-2, the Gaussian and Gate shapes on the heat transfer, and the melting phenomenon are studied.

  19. Distribution patterns of different carbon nanostructures in silicon nitride composites.

    PubMed

    Tapasztó, Orsolya; Markó, Márton; Balázsi, Csaba

    2012-11-01

    The dispersion properties of single- and multi-walled carbon nanotubes as well as mechanically exfoliated few layer graphene flakes within the silicon nitride ceramic matrix have been investigated. Small angle neutron scattering experiments have been employed to gain information on the dispersion of the nano-scale carbon fillers throughout the entire volume of the samples. The neutron scattering data combined with scanning electron microscopy revealed strikingly different distribution patterns for different types of carbon nanostructures. The scattering intensities for single wall carbon nanotubes (SWCNTs) reveal a decay exponent characteristic to surface fractals, which indicate that the predominant part of nanotubes can be found in loose networks wrapping the grains of the polycrystalline matrix. By contrast, multi wall carbon nanotubes (MWCNTs) were found to be present mainly in the form of bulk aggregate structures, while few-layer graphene (FLG) flakes have been individually dispersed within the host matrix, under the very same preparation and processing conditions.

  20. Evaluation of Silicon Nitride for Brayton Turbine Wheel Application

    NASA Technical Reports Server (NTRS)

    Freedman, Marc R.

    2008-01-01

    Silicon nitride (Si3N4) is being evaluated as a risk-reduction alternative for a Jupiter Icy Moons Orbiter Brayton turbine wheel in the event that the Prometheus program design requirements exceed the creep strength of the baseline metallic superalloys. Five Si3N4 ceramics, each processed by a different method, were screened based on the Weibull distribution of bend strength at 1700 F (927 C). Three of the Si3N4 ceramics, Honeywell AS800, Kyocera SN282, and Saint-Gobain NT154, had bend strengths in excess of 87 ksi (600 MPa) at 1700 F (927 C). These were chosen for further assessment and consideration for future subcomponent and component fabrication and testing.

  1. Single-layer graphene on silicon nitride micromembrane resonators

    SciTech Connect

    Schmid, Silvan; Guillermo Villanueva, Luis; Amato, Bartolo; Boisen, Anja; Bagci, Tolga; Zeuthen, Emil; Sørensen, Anders S.; Usami, Koji; Polzik, Eugene S.; Taylor, Jacob M.; Marcus, Charles M.; Cheol Shin, Yong; Kong, Jing

    2014-02-07

    Due to their low mass, high quality factor, and good optical properties, silicon nitride (SiN) micromembrane resonators are widely used in force and mass sensing applications, particularly in optomechanics. The metallization of such membranes would enable an electronic integration with the prospect for exciting new devices, such as optoelectromechanical transducers. Here, we add a single-layer graphene on SiN micromembranes and compare electromechanical coupling and mechanical properties to bare dielectric membranes and to membranes metallized with an aluminium layer. The electrostatic coupling of graphene covered membranes is found to be equal to a perfectly conductive membrane, without significantly adding mass, decreasing the superior mechanical quality factor or affecting the optical properties of pure SiN micromembranes. The concept of graphene-SiN resonators allows a broad range of new experiments both in applied physics and fundamental basic research, e.g., for the mechanical, electrical, or optical characterization of graphene.

  2. Optimization of Silicon Nitride Films For Use in Phase Qubits

    NASA Astrophysics Data System (ADS)

    Sirois, Adam J.; Huber, Martin E.; Osborn, Kevin D.; Strong, Joshua A.; Simmonds, Raymond W.

    2007-03-01

    The lifetime (coherence time) of superconducting phase qubits is currently severely limited by lossy materials used in standard fabrication techniques. In particular, the insulator material - typically Silicon Nitride - used to isolate and physically separate different layers of the qubit is of interest. We have conducted a fractional factorial design experiment to optimize SiNx loss properties with respect to several deposition parameters in an Electron Cyclotron Resonance (ECR) Plasma-Enhanced Chemical Vapor Deposition (PECVD) reactor. Our experimental design included a three-level, four-parameter matrix with N2/SiH4 ratio, microwave power, rf power, and pressure as the parameters. The test-bed for these films is a low temperature microwave LC resonator circuit in which the various insulator films are used as the dielectric between a parallel plate capacitor and the Q (Quality Factor) of the circuit gives the relevant loss information for qubit operations.

  3. Improved performance of silicon nitride-based high temperature ceramics

    NASA Technical Reports Server (NTRS)

    Ashbrook, R. L.

    1977-01-01

    Recent progress in the production of Si3N4 based ceramics is reviewed: (1) high temperature strength and toughness of hot pressed Si3N4 were improved by using high purity powder and a stabilized ZrO2 additive, (2) impact resistance of hot pressed Si3N4 was increased by the use of a crushable energy absorbing layer, (3) the oxidation resistance and strength of reaction sintered Si3N4 were increased by impregnating reaction sintered silicon nitride with solutions that oxidize to Al2O3 or ZrO2, (4) beta prime SiA1ON compositions and sintering aids were developed for improved oxidation resistance or improved high temperature strength.

  4. AFM study of forces between silica, silicon nitride and polyurethane pads.

    PubMed

    Sokolov, Igor; Ong, Quy K; Shodiev, Hasan; Chechik, Nina; James, David; Oliver, Mike

    2006-08-15

    Interaction of silica and silicon nitride with polyurethane surfaces is rather poorly studied despite being of great interest for modern semiconductor industry, e.g., for chemical-mechanical planarization (CMP) processes. Here we show the results from the application of the atomic force microscopy (AFM) technique to study the forces between silica or silicon nitride (AFM tips) and polyurethane surfaces in aqueous solutions of different acidity. The polyurethane surface potentials are derived from the measured AFM data. The obtained potentials are in rather good agreement with measurements of zeta-potentials using the streaming-potentials method. Another important parameter, adhesion, is also measured. While the surface potentials of silica are well known, there are ambiguous results on the potentials of silicon nitride that is naturally oxidized. Deriving the surface potential of the naturally oxidized silicon nitride from our measurements, we show that it is not oxidized to silica despite some earlier published expectations.

  5. Energy level of the nitrogen dangling bond in amorphous silicon nitride

    SciTech Connect

    Warren, W.L. ); Kanicki, J. ); Robertson, J. ); Lenahan, P.M. )

    1991-09-30

    The composition dependence and room-temperature metastability of the paramagnetic nitrogen dangling-bond center is amorphous silicon nitride suggest that its energy level lies close to the N {ital p}{pi} states, in agreement with theoretical calculations.

  6. Resistance of Silicon Nitride Turbine Components to Erosion and Hot Corrosion/oxidation Attack

    NASA Technical Reports Server (NTRS)

    Strangmen, Thomas E.; Fox, Dennis S.

    1994-01-01

    Silicon nitride turbine components are under intensive development by AlliedSignal to enable a new generation of higher power density auxiliary power systems. In order to be viable in the intended applications, silicon nitride turbine airfoils must be designed for survival in aggressive oxidizing combustion gas environments. Erosive and corrosive damage to ceramic airfoils from ingested sand and sea salt must be avoided. Recent engine test experience demonstrated that NT154 silicon nitride turbine vanes have exceptional resistance to sand erosion, relative to superalloys used in production engines. Similarly, NT154 silicon nitride has excellent resistance to oxidation in the temperature range of interest - up to 1400 C. Hot corrosion attack of superalloy gas turbine components is well documented. While hot corrosion from ingested sea salt will attack silicon nitride substantially less than the superalloys being replaced in initial engine applications, this degradation has the potential to limit component lives in advanced engine applications. Hot corrosion adversely affects the strength of silicon nitride in the 850 to 1300 C range. Since unacceptable reductions in strength must be rapidly identified and avoided, AlliedSignal and the NASA Lewis Research Center have pioneered the development of an environmental life prediction model for silicon nitride turbine components. Strength retention in flexure specimens following 1 to 3300 hour exposures to high temperature oxidation and hot corrosion has been measured and used to calibrate the life prediction model. Predicted component life is dependent upon engine design (stress, temperature, pressure, fuel/air ratio, gas velocity, and inlet air filtration), mission usage (fuel sulfur content, location (salt in air), and times at duty cycle power points), and material parameters. Preliminary analyses indicate that the hot corrosion resistance of NT154 silicon nitride is adequate for AlliedSignal's initial engine

  7. Silica coating of zirconia by silicon nitride hydrolysis on adhesion promotion of resin to zirconia.

    PubMed

    Lung, Christie Ying Kei; Liu, Dan; Matinlinna, Jukka Pekka

    2015-01-01

    In this study, the effect of silica coating on zirconia by silicon nitride hydrolysis in resin zirconia bonding was investigated. The silica coated zirconia samples were prepared in silicon nitride dispersion at 90 °C under different immersion times followed by a thermal treatment at 1400 °C. Four test groups were prepared: 1) zirconia samples treated by sandblasting, 2) zirconia samples treated by immersion in silicon nitride dispersion for 6 h, 3) zirconia samples treated by immersion in silicon nitride dispersion for 24 h and 4) zirconia samples treated by immersion in silicon nitride dispersion for 48 h. The coatings were characterized by SEM, EDX, XRD and Raman. The resin zirconia bond strengths of the four test groups were evaluated under three storage conditions: dry storage, water storage in deionized water at 37 °C for 30 days and thermo-cycling for 6000 cycles between 5.0 and 55.0 °C. Surface morphology and composition of zirconia were changed after surface treatments. Phase transformation was observed for zirconia surface by sandblasting treatment but was not observed for zirconia surface treated with silicon nitride hydrolysis. Significant differences in bond strengths were found under different surface treatments (p<0.001) and under three storage conditions (p<0.005). The highest bond strength values were obtained by sandblasting treatment.

  8. Use of additives to improve microstructures and fracture resistance of silicon nitride ceramics

    DOEpatents

    Becher, Paul F.; Lin, Hua-Tay

    2011-06-28

    A high-strength, fracture-resistant silicon nitride ceramic material that includes about 5 to about 75 wt-% of elongated reinforcing grains of beta-silicon nitride, about 20 to about 95 wt-% of fine grains of beta-silicon nitride, wherein the fine grains have a major axis of less than about 1 micron; and about 1 to about 15 wt-% of an amorphous intergranular phase comprising Si, N, O, a rare earth element and a secondary densification element. The elongated reinforcing grains have an aspect ratio of 2:1 or greater and a major axis measuring about 1 micron or greater. The elongated reinforcing grains are essentially isotropically oriented within the ceramic microstructure. The silicon nitride ceramic exhibits a room temperature flexure strength of 1,000 MPa or greater and a fracture toughness of 9 MPa-m.sup.(1/2) or greater. The silicon nitride ceramic exhibits a peak strength of 800 MPa or greater at 1200 degrees C. Also included are methods of making silicon nitride ceramic materials which exhibit the described high flexure strength and fracture-resistant values.

  9. High temperature mechanical performance of a hot isostatically pressed silicon nitride

    SciTech Connect

    Wereszczak, A.A.; Ferber, M.K.; Jenkins, M.G.; Lin, C.K.J.

    1996-01-01

    Silicon nitride ceramics are an attractive material of choice for designers and manufacturers of advanced gas turbine engine components for many reasons. These materials typically have potentially high temperatures of usefulness (up to 1400{degrees}C), are chemically inert, have a relatively low specific gravity (important for inertial effects), and are good thermal conductors (i.e., resistant to thermal shock). In order for manufacturers to take advantage of these inherent properties of silicon nitride, the high-temperature mechanical performance of the material must first be characterized. The mechanical response of silicon nitride to static, dynamic, and cyclic conditions at elevated temperatures, along with reliable and representative data, is critical information that gas turbine engine designers and manufacturers require for the confident insertion of silicon nitride components into gas turbine engines. This final report describes the high-temperature mechanical characterization and analyses that were conducted on a candidate structural silicon nitride ceramic. The high-temperature strength, static fatigue (creep rupture), and dynamic and cyclic fatigue performance were characterized. The efforts put forth were part of Work Breakdown Structure Subelement 3.2.1, {open_quotes}Rotor Data Base Generation.{close_quotes} PY6 is comparable to other hot isostatically pressed (HIPed) silicon nitrides currently being considered for advanced gas turbine engine applications.

  10. Thermal Residual Stress in Environmental Barrier Coated Silicon Nitride - Modeled

    NASA Technical Reports Server (NTRS)

    Ali, Abdul-Aziz; Bhatt, Ramakrishna T.

    2009-01-01

    When exposed to combustion environments containing moisture both un-reinforced and fiber reinforced silicon based ceramic materials tend to undergo surface recession. To avoid surface recession environmental barrier coating systems are required. However, due to differences in the elastic and thermal properties of the substrate and the environmental barrier coating, thermal residual stresses can be generated in the coated substrate. Depending on their magnitude and nature thermal residual stresses can have significant influence on the strength and fracture behavior of coated substrates. To determine the maximum residual stresses developed during deposition of the coatings, a finite element model (FEM) was developed. Using this model, the thermal residual stresses were predicted in silicon nitride substrates coated with three environmental coating systems namely barium strontium aluminum silicate (BSAS), rare earth mono silicate (REMS) and earth mono di-silicate (REDS). A parametric study was also conducted to determine the influence of coating layer thickness and material parameters on thermal residual stress. Results indicate that z-direction stresses in all three systems are small and negligible, but maximum in-plane stresses can be significant depending on the composition of the constituent layer and the distance from the substrate. The BSAS and REDS systems show much lower thermal residual stresses than REMS system. Parametric analysis indicates that in each system, the thermal residual stresses can be decreased with decreasing the modulus and thickness of the coating.

  11. Fabrication of porous silicon nitride ceramics using binder jetting technology

    NASA Astrophysics Data System (ADS)

    Rabinskiy, L.; Ripetsky, A.; Sitnikov, S.; Solyaev, Y.; Kahramanov, R.

    2016-07-01

    This paper presents the results of the binder jetting technology application for the processing of the Si3N4-based ceramics. The difference of the developed technology from analogues used for additive manufacturing of silicon nitride ceramics is a method of the separate deposition of the mineral powder and binder without direct injection of suspensions/slurries. It is assumed that such approach allows reducing the technology complexity and simplifying the process of the feedstock preparation, including the simplification of the composite materials production. The binders based on methyl ester of acrylic acid with polyurethane and modified starch were studied. At this stage of the investigations, the technology of green body's fabrication is implemented using a standard HP cartridge mounted on the robotic arm. For the coordinated operation of the cartridge and robot the specially developed software was used. Obtained green bodies of silicon powder were used to produce the ceramic samples via reaction sintering. The results of study of ceramics samples microstructure and composition are presented. Sintered ceramics are characterized by fibrous α-Si3N4 structure and porosity up to 70%.

  12. Synthesis of fine-grained .alpha.-silicon nitride by a combustion process

    DOEpatents

    Holt, J. Birch; Kingman, Donald D.; Bianchini, Gregory M.

    1990-01-01

    A combustion synthesis process for the preparation of .alpha.-silicon nitride and composites thereof is disclosed. Preparation of the .alpha.-silicon nitride comprises the steps of dry mixing silicon powder with an alkali metal azide, such as sodium azide, cold-pressing the mixture into any desired shape, or loading the mixture into a fused, quartz crucible, loading the crucible into a combustion chamber, pressurizing the chamber with nitrogen and igniting the mixture using an igniter pellet. The method for the preparation of the composites comprises dry mixing silicon powder (Si) or SiO.sub.2, with a metal or metal oxide, adding a small amount of an alkali metal azide such as sodium azide, introducing the mixture into a suitable combustion chamber, pressurizing the combustion chamber with nitrogen, igniting the mixture within the combustion chamber, and isolating the .alpha.-silicon nitride formed as a reaction product.

  13. Graphene metallization of high-stress silicon nitride resonators for electrical integration.

    PubMed

    Lee, Sunwoo; Adiga, Vivekananda P; Barton, Robert A; van der Zande, Arend M; Lee, Gwan-Hyoung; Ilic, B Rob; Gondarenko, Alexander; Parpia, Jeevak M; Craighead, Harold G; Hone, James

    2013-09-11

    High stress stoichiometric silicon nitride resonators, whose quality factors exceed one million, have shown promise for applications in sensing, signal processing, and optomechanics. Yet, electrical integration of the insulating silicon nitride resonators has been challenging, as depositing even a thin layer of metal degrades the quality factor significantly. In this work, we show that graphene used as a conductive coating for Si3N4 membranes reduces the quality factor by less than 30% on average, which is minimal when compared to the effect of conventional metallization layers such as chromium or aluminum. The electrical integration of Si3N4-Graphene (SiNG) heterostructure resonators is demonstrated with electrical readout and electrostatic tuning of the frequency by up to 0.3% per volt. These studies demonstrate the feasibility of hybrid graphene/nitride mechanical resonators in which the electrical properties of graphene are combined with the superior mechanical performance of silicon nitride.

  14. Bend strengths of reaction bonded silicon nitride prepared from dry attrition milled silicon powder

    NASA Technical Reports Server (NTRS)

    Herbell, T. P.; Glasgow, T. K.

    1979-01-01

    Dry attrition milled silicon powder was compacted, sintered in helium, and reaction bonded in nitrogen-4 volume percent hydrogen. Bend strengths of bars with as-nitrided surfaces averaged as high as 210 MPa at room temperature and 220 MPa at 1400 C. Bars prepared from the milled powder were stronger than those prepared from as-received powder at both room temperature and at 1400 C. Room temperature strength decreased with increased milling time and 1400 C strength increased with increased milling time.

  15. Improved multicrystalline silicon ingot quality using single layer silicon beads coated with silicon nitride as seed layer

    NASA Astrophysics Data System (ADS)

    babu, G. Anandha; Takahashi, Isao; Matsushima, Satoru; Usami, Noritaka

    2016-05-01

    We propose to utilize single layer silicon beads (SLSB) coated with silicon nitride as cost-effective seed layer to grow high-quality multicrystalline silicon (mc-Si) ingot. The texture structure of silicon nitride provides a large number of nucleation sites for the fine grain formation at the bottom of the crucible. No special care is needed to prevent seed melting, which would lead to decrease of red zone owing to decrease of feedstock melting time. As we expected, mc-Si ingot seeded with SLSB was found to consist of small, different grain orientations, more uniform grain distribution, high percentage of random grain boundaries, less twin boundaries, and low density of dislocation clusters compared with conventional mc-Si ingot grown under identical growth conditions. These results show that the SLSB seeded mc-Si ingot has enhanced ingot quality. The correlation between grain boundary structure and defect structure as well as the reason responsible for dislocation clusters reduction in SLSB seeded mc-Si wafer are also discussed.

  16. Generation of cavities in silicon wafers by laser ablation using silicon nitride as sacrificial layer

    NASA Astrophysics Data System (ADS)

    Lerner, B.; Perez, M. S.; Toro, C.; Lasorsa, C.; Rinaldi, C. A.; Boselli, A.; Lamagna, A.

    2012-01-01

    Throughout this investigation, experiments on laser ablation with silicon (Si) wafers have been performed using silicon nitride (Si3N4) as a sacrificial layer to find the optimal fluence capable of removing the Si3N4, which allows the subsequent anisotropic etching in Si with potassium hydroxide. As a result, an alternative to the traditional micromachining techniques that require more steps and processing times has been introduced. The effect of the pulse numbers on Si wafers has been studied and it has been observed that when increasing the pulse numbers at the same fluence, the capacity of the pyramidal cavity formed was greater than using only one pulse at higher fluences. Microcavities were performed with a floating Si3N4 layer. This happens to be very useful for the development of drug delivery systems and the manufacture of microarrays. Microcavities were also used as masters for the fabrication of microionizers in polydimethyl siloxane (PDMS).

  17. Multisite silicon neural probes with integrated silicon nitride waveguides and gratings for optogenetic applications

    NASA Astrophysics Data System (ADS)

    Shim, Euijae; Chen, Yu; Masmanidis, Sotiris; Li, Mo

    2016-03-01

    Optimal optogenetic perturbation of brain circuit activity often requires light delivery in a precise spatial pattern that cannot be achieved with conventional optical fibers. We demonstrate an implantable silicon-based probe with a compact light delivery system, consisting of silicon nitride waveguides and grating couplers for out-of-plane light emission with high spatial resolution. 473 nm light is coupled into and guided in cm-long waveguide and emitted at the output grating coupler. Using the direct cut-back and out-scattering measurement techniques, the propagation optical loss of the waveguide is measured to be below 3 dB/cm. The grating couplers provide collimated light emission with sufficient irradiance for neural stimulation. Finally, a probe with multisite light delivery with three output grating emitters from a single laser input is demonstrated.

  18. High gas velocity burner tests on silicon carbide and silicon nitride at 1200 C

    NASA Technical Reports Server (NTRS)

    Sanders, W. A.; Probst, H. B.

    1973-01-01

    Specimens of silicon carbide and silicon nitride were exposed to a Mach one gas velocity burner simulating a turbine engine environment. Cyclic tests up to 100 hour duration were conducted at specimen temperatures of 1200 C. A specimen geometry was used that develops thermal stresses during thermal cycling in a manner similar to blades and vanes of a gas turbine engine. Materials were compared on a basis of weight change, dimensional reductions, metallography, fluorescent penetrant inspection, X-ray diffraction analyses, failure mode, and general appearance. One hot pressed SiC, one reaction sintered SiC, and three hot pressed Si3N4 specimens survived the program goal of 100 one-hour cycle exposures. Of the materials that failed to meet the program goal, thermal fatigue was identified as the exclusive failure mode.

  19. Multisite silicon neural probes with integrated silicon nitride waveguides and gratings for optogenetic applications

    PubMed Central

    Shim, Euijae; Chen, Yu; Masmanidis, Sotiris; Li, Mo

    2016-01-01

    Optimal optogenetic perturbation of brain circuit activity often requires light delivery in a precise spatial pattern that cannot be achieved with conventional optical fibers. We demonstrate an implantable silicon-based probe with a compact light delivery system, consisting of silicon nitride waveguides and grating couplers for out-of-plane light emission with high spatial resolution. 473 nm light is coupled into and guided in cm-long waveguide and emitted at the output grating coupler. Using the direct cut-back and out-scattering measurement techniques, the propagation optical loss of the waveguide is measured to be below 3 dB/cm. The grating couplers provide collimated light emission with sufficient irradiance for neural stimulation. Finally, a probe with multisite light delivery with three output grating emitters from a single laser input is demonstrated. PMID:26941111

  20. Preparation of silicon carbide-silicon nitride fibers by the pyrolysis of polycarbosilazane precursors

    NASA Technical Reports Server (NTRS)

    Penn, B. G.; Daniels, J. G.; Ledbetter, F. E., III; Clemons, J. M.

    1985-01-01

    The development of silicon carbide-silicon nitride fibers (SiC-Si3N4) by the pyrolysis of polycarbosilazane precursors is reviewed. Precursor resin, which was prepared by heating tris(N-methylamino)methylsilane or tris(N-methylamino)phenylsilane to about 520 C, was drawn into fibers from the melt and then made unmeltable by humidity conditioning at 100 C and 95 percent relative humidity. The humidity treated precursor fibers were pyrolyzed to ceramic fibers with good mechanical properties and electrical resistivity. For example, SiC-Si3N4 fibers derived from tris(N-methylamino)methylsilane had a tensile rupture modulus of 29 million psi and electrical resistivity of 6.9 x ten to the 8th power omega-cm, which is ten to the twelfth power times greater than that obtained for graphite fibers.

  1. RF sputtered silicon and hafnium nitrides as applied to 440C steel

    NASA Technical Reports Server (NTRS)

    Grill, A.; Aron, P. R.

    1984-01-01

    Silicon nitride and hafnium nitride coatings were deposited on oxidized and unoxidized 440C stainless steel substrates. Sputtering was done in mixtures of argon and nitrogen gases from pressed powder silicon nitride and from hafnium metal targets. The coatings and the interface between the coating and substrate were investigated by X-ray diffractometry, scanning electron microscopy, energy dispersive X-ray analysis and Auger electron spectroscopy. Oxide was found at all interfaces with an interface width of at least 600 A for the oxidized substrates and at least 300 A for the unoxidized substrates. Scratch test results demonstrate that the adhesion of hafnium nitride to both oxidized and unoxidized 440C is superior to that of silicon nitride. Oxidized 440C is found to have increased adhesion, to both nitrides, over that of unoxidized 440C. Coatings of both nitrides deposited at 8 mtorr were found to have increased adhesion to both oxidized and unoxidized 440C over those deposited at 20 mtorr.

  2. Role of poly(diallyldimethylammonium chloride) in selective polishing of polysilicon over silicon dioxide and silicon nitride films.

    PubMed

    Penta, Naresh K; Dandu Veera, P R; Babu, S V

    2011-04-05

    A cationic polymer, poly(diallyldimethylammonium chloride), or PDADMAC (MW ≈ 200,000), at a concentration of 250 ppm was used to enhance polysilicon removal rates (RRs) to ∼600 nm/min while simultaneously suppressing both silicon dioxide and silicon nitride RRs to <1 nm/min, both in the absence or in the presence of ceria or silica abrasives during chemical mechanical polishing (CMP). These results suggest that aqueous abrasive-free solutions of PDADMAC are very attractive candidates for several front-end-of-line (FEOL) CMP processes. Possible mechanisms for the enhancement of poly-Si RR and the suppression of oxide and nitride RRs are proposed on the basis of the RRs, contact angle data on poly-Si films, zeta potentials of polishing pads, polysilicon films, silicon nitride particles, and silica and ceria abrasives, thermogravimetric analysis, and UV-vis spectroscopy data.

  3. Optimization of the gelcasting of a silicon nitride formulation

    SciTech Connect

    Omatete, O.O.; O`Young, K.; Pollinger, J.P.

    1995-12-31

    An optimum gelcasting condition for a silicon nitride formulation was determined using the Taguchi statistical method. An L{sub 8}(4{sup 1} x 2{sup 4}) design, in which the effects of one factor at four levels and four factors at two levels were evaluated in only eight experiments, was used. The factors at two levels were: the total monomer concentration, the monomer/crosslinker ratio, the initiator concentration, and the initiator/catalyst ratio; the factor at four levels was the initiator concentration per mass of the slip. The primary criterion used to determine optimum design was the green strength of the dried part. Three other parameters were also considered: initial slip viscosity, time for the slip viscosity to reach 300 mPa.s at 25{degrees}C, and time for the slip to gel at 50{degrees}C. The optimum gelcasting conditions from the designed experiments predicted 80% increase in green strength (4.3 MPa versus 2.4 MPa, the initial value). The confirmation runs showed only a 60% increase in strength (3.9 MPa).

  4. Optimization of the gelcasting of a silicon nitride formulation

    SciTech Connect

    Omatete, O.O.; Pollinger, J.P.; O`Young, K.

    1995-06-01

    An optimum gelcasting condition for a silicon nitride formulation was determined using the Taguchi statistical method. An L{sub 8}(4{sup 1} {times} 2{sup 4}) design, in which the effects of one factor at four levels and four factors at two levels were evaluated in only eight experiments, was used. The factors at two levels were: the total monomer concentration, the monomer/crosslinker ratio, the initiator concentration, and the initiator/catalyst ratio; the factor at four levels was the initiator concentration per mass of the slip. The primary criterion used to determine optimum design was the green strength of the dried part, although three other parameters were measured: initial slip viscosity, time for the slip viscosity to reach 300 mPa.s. at 25 C, and time for the slip to gel at 50 C. The optimum gelcasting conditions from the designed experiments predicted 80% increase in green strength (4.3 MPa versus 2.4 MPa, the initial value). The confirmation runs showed only a 60% increase (3.8 MPa).

  5. Bioactive silicon nitride: A new therapeutic material for osteoarthropathy.

    PubMed

    Pezzotti, Giuseppe; Marin, Elia; Adachi, Tetsuya; Rondinella, Alfredo; Boschetto, Francesco; Zhu, Wenliang; Sugano, Nobuhiko; Bock, Ryan M; McEntire, Bryan; Bal, Sonny B

    2017-03-22

    While the reciprocity between bioceramics and living cells is complex, it is principally governed by the implant's surface chemistry. Consequently, a deeper understanding of the chemical interactions of bioceramics with living tissue could ultimately lead to new therapeutic strategies. However, the physical and chemical principles that govern these interactions remain unclear. The intricacies of this biological synergy are explored within this paper by examining the peculiar surface chemistry of a relatively new bioceramic, silicon nitride (Si3N4). Building upon prior research, this paper aims at obtaining new insights into the biological interactions between Si3N4 and living cells, as a consequence of the off-stoichiometric chemical nature of its surface at the nanometer scale. We show here yet unveiled details of surface chemistry and, based on these new data, formulate a model on how, ultimately, Si3N4 influences cellular signal transduction functions and differentiation mechanisms. In other words, we interpret its reciprocity with living cells in chemical terms. These new findings suggest that Si3N4 might provide unique new medicinal therapies and effective remedies for various bone or joint maladies and diseases.

  6. Bioactive silicon nitride: A new therapeutic material for osteoarthropathy

    PubMed Central

    Pezzotti, Giuseppe; Marin, Elia; Adachi, Tetsuya; Rondinella, Alfredo; Boschetto, Francesco; Zhu, Wenliang; Sugano, Nobuhiko; Bock, Ryan M.; McEntire, Bryan; Bal, Sonny B.

    2017-01-01

    While the reciprocity between bioceramics and living cells is complex, it is principally governed by the implant’s surface chemistry. Consequently, a deeper understanding of the chemical interactions of bioceramics with living tissue could ultimately lead to new therapeutic strategies. However, the physical and chemical principles that govern these interactions remain unclear. The intricacies of this biological synergy are explored within this paper by examining the peculiar surface chemistry of a relatively new bioceramic, silicon nitride (Si3N4). Building upon prior research, this paper aims at obtaining new insights into the biological interactions between Si3N4 and living cells, as a consequence of the off-stoichiometric chemical nature of its surface at the nanometer scale. We show here yet unveiled details of surface chemistry and, based on these new data, formulate a model on how, ultimately, Si3N4 influences cellular signal transduction functions and differentiation mechanisms. In other words, we interpret its reciprocity with living cells in chemical terms. These new findings suggest that Si3N4 might provide unique new medicinal therapies and effective remedies for various bone or joint maladies and diseases. PMID:28327664

  7. Brazing of titanium-vapor-coated silicon nitride

    SciTech Connect

    Santella, M.L. )

    1988-09-01

    A technique for brazing Si{sub 3}N{sub 4} with metallic alloys was evaluated. The process involved vapor coating the ceramic with a 1.0-{mu}-thick layer of titanium before the brazing operation. The coating improved wetting of the Si{sub 3}N{sub 4} surfaces to the extent that strong bonding between the solidified braze filler metal and the ceramic occurred. Braze joints of Si{sub 3}N{sub 4} were made with Ag-Cu, Au-Ni, and Au-Ni-Pd alloys at temperatures of 790{degree}, 970{degree}, and 1,130{degree}C. Silicon nitride specimens were also brazed with a Ag-Cu alloy to the molybdenum alloy TZM, titanium, and A286 steel at 790{degree}C. Residual stresses resulting from mismatch of thermal expansion coefficients between the Si{sub 3}N{sub 4} and the metals caused all of the ceramic-to-metal joints to spontaneously crack in the Si{sub 3}N{sub 4} upon cooling from the brazing temperature.

  8. Acoustic emission monitoring of high speed grinding of silicon nitride

    PubMed

    Hwang; Whitenton; Hsu; Blessing; Evans

    2000-03-01

    Acoustic emission (AE) monitoring of a machining process offers real-time sensory input which could provide tool condition and part quality information that is critical to effective process control. However, the choice of sensor, its placement, and how to process the data and extract useful information are challenging application-specific questions which researchers must consider. Here we report an effort to resolve these questions for the case of high speed grinding of silicon nitride using an electroplated single-layered diamond wheel. A grinding experiment was conducted at a wheel speed of 149 m s-1 and continued until the end of the useful wheel life. AE signal data were then collected for each complete pass at given grinding times throughout the useful wheel life. We found that the amplitude of the AE signal monotonically increases with wheel wear, as do grinding forces and energy. Furthermore, the signal power contained in the AE signal proportionally increases with the associated grinding power, which suggests that the AE signal could provide quantitative information of wheel wear in high-speed grinding, and could also be used to determine when the grinding wheel needs replacement.

  9. Surface modifications of silicon nitride for cellular biosensor applications.

    PubMed

    Gustavsson, Johan; Altankov, George; Errachid, Abdelhamid; Samitier, Josep; Planell, Josep A; Engel, Elisabeth

    2008-04-01

    Thin films of silicon nitride (Si3N4) can be used in several kinds of micro-sized biosensors as a material to monitor fine environmental changes related to the process of bone formation in vitro. We found however that Si3N4 does not provide optimal conditions for osseointegration as osteoblast-like MG-63 cells tend to detach from the surface when cultured over confluence. Therefore Si3N4 was modified with self-assembled monolayers bearing functional end groups of primary amine (NH2) and carboxyl (COOH) respectively. Both these modifications enhanced the interaction with confluent cell layers and thus improve osseointegration over Si3N4. Furthermore it was observed that the NH2 functionality increased the adsorption of fibronectin (FN), promoted cell proliferation, but delayed the differentiation. We also studied the fate of pre-adsorbed and secreted FN from cells to learn more about the impact of above functionalities for the development of provisional extracellular matrix on materials interface. Taken together our data supports that Si3N4 has low tissue integration but good cellular biocompatibility and thus is appropriate in cellular biosensor applications such as the ion-sensitive field effect transistor (ISFET). COOH and NH2 chemistries generally improve the interfacial tissue interaction with the sensor and they are therefore suitable substrates for monitoring cellular growth or matrix deposition using electrical impedance spectroscopy.

  10. Photoluminescence and electronic transitions in cubic silicon nitride.

    PubMed

    Museur, Luc; Zerr, Andreas; Kanaev, Andrei

    2016-01-04

    A spectroscopic study of cubic silicon nitride (γ-Si3N4) at cryogenic temperatures of 8 K in the near IR - VUV range of spectra with synchrotron radiation excitation provided the first experimental evidence of direct electronic transitions in this material. The observed photoluminescence (PL) bands were assigned to excitons and excited and centers formed after the electron capture by neutral structural defects. The excitons are weakly quenched on neutral and strongly on charged defects. The fundamental band-gap energy of 5.05 ± 0.05 eV and strong free exciton binding energy ~0.65 eV were determined. The latter value suggests a high efficiency of the electric power transformation in light in defect-free crystals. Combined with a very high hardness and exceptional thermal stability in air, our results indicate that γ-Si3N4 has a potential for fabrication of robust and efficient photonic emitters.

  11. Silicon Nitride Bioceramics Induce Chemically Driven Lysis in Porphyromonas gingivalis.

    PubMed

    Pezzotti, Giuseppe; Bock, Ryan M; McEntire, Bryan J; Jones, Erin; Boffelli, Marco; Zhu, Wenliang; Baggio, Greta; Boschetto, Francesco; Puppulin, Leonardo; Adachi, Tetsuya; Yamamoto, Toshiro; Kanamura, Narisato; Marunaka, Yoshinori; Bal, B Sonny

    2016-03-29

    Organisms of Gram-negative phylum bacteroidetes, Porphyromonas gingivalis, underwent lysis on polished surfaces of silicon nitride (Si3N4) bioceramics. The antibacterial activity of Si3N4 was mainly the result of chemically driven principles. The lytic activity, although not osmotic in nature, was related to the peculiar pH-dependent surface chemistry of Si3N4. A buffering effect via the formation of ammonium ions (NH4(+)) (and their modifications) was experimentally observed by pH microscopy. Lysis was confirmed by conventional fluorescence spectroscopy, and the bacteria's metabolism was traced with the aid of in situ Raman microprobe spectroscopy. This latter technique revealed the formation of peroxynitrite within the bacterium itself. Degradation of the bacteria's nucleic acid, drastic reduction in phenilalanine, and reduction of lipid concentration were observed due to short-term exposure (6 days) to Si3N4. Altering the surface chemistry of Si3N4 by either chemical etching or thermal oxidation influenced peroxynitrite formation and affected bacteria metabolism in different ways. Exploiting the peculiar surface chemistry of Si3N4 bioceramics could be helpful in counteracting Porphyromonas gingivalis in an alkaline pH environment.

  12. Bioactive silicon nitride: A new therapeutic material for osteoarthropathy

    NASA Astrophysics Data System (ADS)

    Pezzotti, Giuseppe; Marin, Elia; Adachi, Tetsuya; Rondinella, Alfredo; Boschetto, Francesco; Zhu, Wenliang; Sugano, Nobuhiko; Bock, Ryan M.; McEntire, Bryan; Bal, Sonny B.

    2017-03-01

    While the reciprocity between bioceramics and living cells is complex, it is principally governed by the implant’s surface chemistry. Consequently, a deeper understanding of the chemical interactions of bioceramics with living tissue could ultimately lead to new therapeutic strategies. However, the physical and chemical principles that govern these interactions remain unclear. The intricacies of this biological synergy are explored within this paper by examining the peculiar surface chemistry of a relatively new bioceramic, silicon nitride (Si3N4). Building upon prior research, this paper aims at obtaining new insights into the biological interactions between Si3N4 and living cells, as a consequence of the off-stoichiometric chemical nature of its surface at the nanometer scale. We show here yet unveiled details of surface chemistry and, based on these new data, formulate a model on how, ultimately, Si3N4 influences cellular signal transduction functions and differentiation mechanisms. In other words, we interpret its reciprocity with living cells in chemical terms. These new findings suggest that Si3N4 might provide unique new medicinal therapies and effective remedies for various bone or joint maladies and diseases.

  13. Photoluminescence and electronic transitions in cubic silicon nitride

    PubMed Central

    Museur, Luc; Zerr, Andreas; Kanaev, Andrei

    2016-01-01

    A spectroscopic study of cubic silicon nitride (γ-Si3N4) at cryogenic temperatures of 8 K in the near IR - VUV range of spectra with synchrotron radiation excitation provided the first experimental evidence of direct electronic transitions in this material. The observed photoluminescence (PL) bands were assigned to excitons and excited and centers formed after the electron capture by neutral structural defects. The excitons are weakly quenched on neutral and strongly on charged defects. The fundamental band-gap energy of 5.05 ± 0.05 eV and strong free exciton binding energy ~0.65 eV were determined. The latter value suggests a high efficiency of the electric power transformation in light in defect-free crystals. Combined with a very high hardness and exceptional thermal stability in air, our results indicate that γ-Si3N4 has a potential for fabrication of robust and efficient photonic emitters. PMID:26725937

  14. Silicon Nitride Creep Under Various Specimen-Loading Configurations

    NASA Technical Reports Server (NTRS)

    Choi, Sung R.; Holland, Frederic A.

    2000-01-01

    Extensive creep testing of a hot-pressed silicon nitride (NC 132) was performed at 1300 C in air using five different specimen-loading configurations: (1) pure tension, (2) pure compression, (3) four-point uniaxial flexure, (4) ball-on-ring biaxial flexure, and (5) ring-on-ring biaxial flexure. This paper reports experimental results as well as test techniques developed in this work. Nominal creep strain and its rate for a given nominal applied stress were greatest in tension, least in compression, and intermediate in uniaxial and biaxial flexure. Except for the case of compression loading, nominal creep strain generally decreased with time, resulting in a less-defined steady-state condition. Of the four creep formulations-power-law, hyperbolic sine, step, and redistribution--the conventional power-law formulation still provides the most convenient and reasonable estimation of the creep parameters of the NC 132 material. The data base to be obtained will be used to validate the NASA Glenn-developed design code CARES/Creep (ceramics analysis and reliability evaluation of structures and creep).

  15. Shock loading and release behavior of silicon nitride

    NASA Astrophysics Data System (ADS)

    Kawai, N.; Tsuru, T.; Hidaka, N.; Liu, X.; Mashimo, T.

    2017-01-01

    Shock-reshock and shock-release experiments were performed on silicon nitride ceramics above and below its phase transition pressure. Experimental results clearly show the occurrence of elastic-plastic transition and phase transition during initial shock loading. The HEL and phase transition stress are determined as 11.6 and 34.5 GPa, respectively. Below the phase transition stress, the reshock profile consists of the single shock with short rise time, while the release profile shows the gradual release followed by rapid one. Above phase transition stress, reshock and release behavior varies with the initial shock stress. In the case of reshock and release from about 40 GPa, the reshock structure is considerably dispersed, while the release structure shows rapid release. In the reshock profile from about 50 GPa, the formation of the shock wave with the small ramped precursor is observed. And, the release response from same shocked condition shows initial gradual release and subsequent quite rapid one. These results would provide the information about how phase transformation kinetics effects on the reshock and release behavior.

  16. Ag doped silicon nitride nanocomposites for embedded plasmonics

    NASA Astrophysics Data System (ADS)

    Bayle, M.; Bonafos, C.; Benzo, P.; Benassayag, G.; Pécassou, B.; Khomenkova, L.; Gourbilleau, F.; Carles, R.

    2015-09-01

    The localized surface plasmon-polariton resonance (LSPR) of noble metal nanoparticles (NPs) is widely exploited for enhanced optical spectroscopies of molecules, nonlinear optics, photothermal therapy, photovoltaics, or more recently in plasmoelectronics and photocatalysis. The LSPR frequency depends not only of the noble metal NP material, shape, and size but also of its environment, i.e., of the embedding matrix. In this paper, Ag-NPs have been fabricated by low energy ion beam synthesis in silicon nitride (SiNx) matrices. By coupling the high refractive index of SiNx to the relevant choice of dielectric thickness in a SiNx/Si bilayer for an optimum antireflective effect, a very sharp plasmonic optical interference is obtained in mid-range of the visible spectrum (2.6 eV). The diffusion barrier property of the host SiNx matrix allows for the introduction of a high amount of Ag and the formation of a high density of Ag-NPs that nucleate during the implantation process. Under specific implantation conditions, in-plane self-organization effects are obtained in this matrix that could be the result of a metastable coarsening regime.

  17. Plasma enhanced atomic layer deposition of silicon nitride using neopentasilane

    SciTech Connect

    Weeks, Stephen Nowling, Greg; Fuchigami, Nobi; Bowes, Michael; Littau, Karl

    2016-01-15

    Progress in transistor scaling has increased the demands on the material properties of silicon nitride (SiN{sub x}) thin films used in device fabrication and at the same time placed stringent restrictions on the deposition conditions employed. Recently, low temperature plasma enhanced atomic layer deposition has emerged as a viable technique for depositing these films with a thermal budget compatible with semiconductor processing at sub-32 nm technology nodes. For these depositions, it is desirable to use precursors that are free from carbon and halogens that can incorporate into the film. Beyond this, it is necessary to develop processing schemes that minimize the wet etch rate of the film as it will be subjected to wet chemical processing in subsequent fabrication steps. In this work, the authors introduce low temperature deposition of SiN{sub x} using neopentasilane [NPS, (SiH{sub 3}){sub 4}Si] in a plasma enhanced atomic layer deposition process with a direct N{sub 2} plasma. The growth with NPS is compared to a more common precursor, trisilylamine [TSA, (SiH{sub 3}){sub 3 }N] at identical process conditions. The wet etch rates of the films deposited with NPS are characterized at different plasma conditions and the impact of ion energy is discussed.

  18. Thermal properties of silicon nitride beams below one Kelvin.

    SciTech Connect

    Wang, G.; Yefremenko, V.; Novosad, V.; Datesman, A.; Pearson, J.; Divan, R.; Chang, C. L.; Bleem, L.; Crites, A. T.; Mehl, J.; Natoli, T.; McMahon, J.; Sayre, J.; Ruhl, J.; Meyer, S. S.; Carlstrom, J. E.

    2011-06-01

    We have investigated thermal properties of 1 {micro}m thick silicon nitride beams of different lateral dimensions. We measured the thermal conductance by simultaneously employing a TES both as a heater and as a sensor. Based upon these measurements, we calculate the thermal conductivity of the beams. We utilize a boundary limited phonon transport model and assume a temperature independent phonon mean free path. We find that the thermal conductivity is determined by the fraction of diffusive reflection at surface. The following results are obtained from 0.30 K to 0.55 K: the volume heat capacity is 0.082T+0.502T{sup 3} J/m{sup 3}-K . The width dependent phonon mean free path is 6.58 {micro}m, 9.80 {micro}m and 11.55 {micro}m for 10 {micro}m, 20 {micro}m and 30 {micro}m beams respectively at a 29% surface diffusive reflection.

  19. Gas pressure sintering of silicon nitride to optimize fracture toughness

    SciTech Connect

    Tiegs, T.N.; Nunn, S.D.; Beavers, T.M.; Menchhofer, P.A.; Barker, D.L.; Coffey, D.W.

    1995-06-01

    Gas-pressure sintering (GPS) can be used to densify silicon nitride containing a wide variety of sintering additives. Parameters affecting the sintering behavior include densification temperature, densification time, grain growth temperature, grain growth time and heating rates. The Si{sub 3}N{sub 4}-6% Y{sub 2}O{sub 3}-2% A1{sub 2}O{sub 3} samples sintered to high densities at all conditions used in the present study, whereas the Si{sub 3}N{sub 4}-Sr{sub 2}La{sub 4}Yb{sub 4}(SiO{sub 4}){sub 6}O{sub 2} samples required the highest temperatures and longest times to achieve densities {ge}98 % T. D. The main effect on the fracture toughness for Si{sub 3}N{sub 4}-6% Y{sub 2}O{sub 3}-2% A1{sub 2}O{sub 3} samples was the use of a lower densification temperature, which was 1900C in the present study. For the Si{sub 3}N{sub 4}-Sr{sub 2}La{sub 4}Yb{sub 4}SiO4{sub 4}){sub 6}O{sub 2} composition, fracture toughness was sensitive to and improved by a slower heating rate (10c/min), a lower densification temperature (1900`), a higher grain growth temperature (2000C), and a longer grain growth time (2 h).

  20. Ag doped silicon nitride nanocomposites for embedded plasmonics

    SciTech Connect

    Bayle, M.; Bonafos, C. Benzo, P.; Benassayag, G.; Pécassou, B.; Carles, R.; Khomenkova, L.; Gourbilleau, F.

    2015-09-07

    The localized surface plasmon-polariton resonance (LSPR) of noble metal nanoparticles (NPs) is widely exploited for enhanced optical spectroscopies of molecules, nonlinear optics, photothermal therapy, photovoltaics, or more recently in plasmoelectronics and photocatalysis. The LSPR frequency depends not only of the noble metal NP material, shape, and size but also of its environment, i.e., of the embedding matrix. In this paper, Ag-NPs have been fabricated by low energy ion beam synthesis in silicon nitride (SiN{sub x}) matrices. By coupling the high refractive index of SiN{sub x} to the relevant choice of dielectric thickness in a SiN{sub x}/Si bilayer for an optimum antireflective effect, a very sharp plasmonic optical interference is obtained in mid-range of the visible spectrum (2.6 eV). The diffusion barrier property of the host SiN{sub x} matrix allows for the introduction of a high amount of Ag and the formation of a high density of Ag-NPs that nucleate during the implantation process. Under specific implantation conditions, in-plane self-organization effects are obtained in this matrix that could be the result of a metastable coarsening regime.

  1. Germanium-on-silicon nitride waveguides for mid-infrared integrated photonics

    NASA Astrophysics Data System (ADS)

    Li, Wei; Anantha, P.; Bao, Shuyu; Lee, Kwang Hong; Guo, Xin; Hu, Ting; Zhang, Lin; Wang, Hong; Soref, Richard; Tan, Chuan Seng

    2016-12-01

    A germanium-based platform with a large core-clad index contrast, germanium-on-silicon nitride waveguide, is demonstrated at mid-infrared wavelength. Simulations are performed to verify the feasibility of this structure. This structure is realized by first bonding a silicon-nitride-deposited germanium-on-silicon donor wafer onto a silicon substrate wafer, followed by the layer transfer approach to obtain germanium-on-silicon nitride structure, which is scalable to all wafer sizes. The misfit dislocations which initially form along the interface between germanium/silicon can be removed by chemical mechanical polishing after layer transfer process resulting in a high-quality germanium layer. At the mid-infrared wavelength of 3.8 μm, the germanium-on-silicon nitride waveguide has a propagation loss of 3.35 ± 0.5 dB/cm and a bend loss of 0.14 ± 0.01 dB/bend for a radius of 5 μm for the transverse-electric mode.

  2. Gas source molecular beam epitaxy of scandium nitride on silicon carbide and gallium nitride surfaces

    SciTech Connect

    King, Sean W. Davis, Robert F.; Nemanich, Robert J.

    2014-11-01

    Scandium nitride (ScN) is a group IIIB transition metal nitride semiconductor with numerous potential applications in electronic and optoelectronic devices due to close lattice matching with gallium nitride (GaN). However, prior investigations of ScN have focused primarily on heteroepitaxial growth on substrates with a high lattice mismatch of 7%–20%. In this study, the authors have investigated ammonia (NH{sub 3}) gas source molecular beam epitaxy (NH{sub 3}-GSMBE) of ScN on more closely lattice matched silicon carbide (SiC) and GaN surfaces (<3% mismatch). Based on a thermodynamic analysis of the ScN phase stability window, NH{sub 3}-GSMBE conditions of 10{sup −5}–10{sup −4} Torr NH{sub 3} and 800–1050 °C where selected for initial investigation. In-situ x-ray photoelectron spectroscopy (XPS) and ex-situ Rutherford backscattering measurements showed all ScN films grown using these conditions were stoichiometric. For ScN growth on 3C-SiC (111)-(√3 × √3)R30° carbon rich surfaces, the observed attenuation of the XPS Si 2p and C 1s substrate core levels with increasing ScN thickness indicated growth initiated in a layer-by-layer fashion. This was consistent with scanning electron microscopy (SEM) images of 100–200 nm thick films that revealed featureless surfaces. In contrast, ScN films grown on 3C-SiC (111)-(3 × 3) and 3C-SiC (100)-(3 × 2) silicon rich surfaces were found to exhibit extremely rough surfaces in SEM. ScN films grown on both 3C-SiC (111)-(√3 × √3)R30° and 2H-GaN (0001)-(1 × 1) epilayer surfaces exhibited hexagonal (1 × 1) low energy electron diffraction patterns indicative of (111) oriented ScN. X-ray diffraction ω-2θ rocking curve scans for these same films showed a large full width half maximum of 0.29° (1047 arc sec) consistent with transmission electron microscopy images that revealed the films to be poly-crystalline with columnar grains oriented at ≈15° to the [0001] direction of the

  3. Elasticity and inelasticity of silicon nitride/boron nitride fibrous monoliths.

    SciTech Connect

    Smirnov, B. I.; Burenkov, Yu. A.; Kardashev, B. K.; Singh, D.; Goretta, K. C.; de Arellano-Lopez, A. R.; Energy Technology; Russian Academy of Sciences; Univer. de Sevilla

    2001-01-01

    A study is reported on the effect of temperature and elastic vibration amplitude on Young's modulus E and internal friction in Si{sub 3}N{sub 4} and BN ceramic samples and Si{sub 3}N{sub 4}/BN monoliths obtained by hot pressing of BN-coated Si{sub 3}N{sub 4} fibers. The fibers were arranged along, across, or both along and across the specimen axis. The E measurements were carried out under thermal cycling within the 20-600 C range. It was found that high-modulus silicon-nitride specimens possess a high thermal stability; the E(T) dependences obtained under heating and cooling coincide well with one another. The low-modulus BN ceramic exhibits a considerable hysteresis, thus indicating evolution of the defect structure under the action of thermoelastic (internal) stresses. Monoliths demonstrate a qualitatively similar behavior (with hysteresis). This behavior of the elastic modulus is possible under microplastic deformation initiated by internal stresses. The presence of microplastic shear in all the materials studied is supported by the character of the amplitude dependences of internal friction and the Young's modulus. The experimental data obtained are discussed in terms of a model in which the temperature dependences of the elastic modulus and their features are accounted for by both microplastic deformation and nonlinear lattice-atom vibrations, which depend on internal stresses.

  4. Dispersion characteristics of nanometer-scaled silicon nitride suspended membrane waveguides

    NASA Astrophysics Data System (ADS)

    Dandan, Bian; Xun, Lei; Shaowu, Chen

    2016-11-01

    We investigate the dispersion properties of nanometer-scaled silicon nitride suspended membrane waveguides around the communication wavelength and systematically study their relationship with the key structural parameters of the waveguide. The simulation results show that a suspended membrane waveguide can realize anomalous dispersion with a relatively thinner silicon nitride thickness in the range of 400 to 600 nm, whereas, for the same membrane thickness, a conventional rib or strip silicon nitride waveguide cannot support anomalous dispersion. In particular, a waveguide with 400 nm silicon nitride thickness and deep etch depth (r = 0.05) exhibits anomalous dispersion around the communication wavelength when the waveguide width ranges from 990 to 1255 nm, and the maximum dispersion is 22.56 ps/(nm·km). This specially designed anomalous dispersion silicon nitride waveguide is highly desirable for micro-resonator based optical frequency combs due to its potential to meet the phase-matching condition required for cascaded four-wave-mixing. Project supported by the National Natural Science Foundation of China (Nos. 61435002, 61527823 61321063).

  5. Process for producing silicon nitride based articles of high fracture toughness and strength

    DOEpatents

    Huckabee, M.; Buljan, S.T.; Neil, J.T.

    1991-09-10

    A process for producing a silicon nitride-based article of improved fracture toughness and strength is disclosed. The process involves densifying to at least 98% of theoretical density a mixture including (a) a bimodal silicon nitride powder blend consisting essentially of about 10-30% by weight of a first silicon nitride powder of an average particle size of about 0.2 [mu]m and a surface area of about 8-12 m[sup 2]/g, and about 70-90% by weight of a second silicon nitride powder of an average particle size of about 0.4-0.6 [mu]m and a surface area of about 2-4 m[sup 2]/g, (b) about 10-50 percent by volume, based on the volume of the densified article, of refractory whiskers or fibers having an aspect ratio of about 3-150 and having an equivalent diameter selected to produce in the densified article an equivalent diameter ratio of the whiskers or fibers to grains of silicon nitride of greater than 1.0, and (c) an effective amount of a suitable oxide densification aid. Optionally, the mixture may be blended with a binder and injection molded to form a green body, which then may be densified by, for example, hot isostatic pressing.

  6. Process for producing silicon nitride based articles of high fracture toughness and strength

    DOEpatents

    Huckabee, Marvin; Buljan, Sergej-Tomislav; Neil, Jeffrey T.

    1991-01-01

    A process for producing a silicon nitride-based article of improved fracture toughness and strength. The process involves densifying to at least 98% of theoretical density a mixture including (a) a bimodal silicon nitride powder blend consisting essentially of about 10-30% by weight of a first silicon nitride powder of an average particle size of about 0.2 .mu.m and a surface area of about 8-12 m.sup.2 /g, and about 70-90% by weight of a second silicon nitride powder of an average particle size of about 0.4-0.6 .mu.m and a surface area of about 2-4 m.sup.2 /g, (b) about 10-50 percent by volume, based on the volume of the densified article, of refractory whiskers or fibers having an aspect ratio of about 3-150 and having an equivalent diameter selected to produce in the densified article an equivalent diameter ratio of the whiskers or fibers to grains of silicon nitride of greater than 1.0, and (c) an effective amount of a suitable oxide densification aid. Optionally, the mixture may be blended with a binder and injection molded to form a green body, which then may be densified by, for example, hot isostatic pressing.

  7. Growth and characterization aluminum gallium nitride/gallium nitride heterostructures on silicon(111) wafers using various buffer layers

    NASA Astrophysics Data System (ADS)

    Venugopal, Rajesh

    Devices based on nitride wide bandgap semiconductors are suitable for several promising applications such as blue lasers, LEDs, HEMTs etc. Due to the absence of bulk nitride crystals, nitride films are grown on lattice mismatched substrates like Al2O3 and 6H-SiC. However from a cost and integration standpoint silicon would be the substrate of choice for the growth of these materials. Nitride heterostructure growth on large area Si(111) is hence attempted by Metal Organic Chemical Vapor Deposition (MOCVD) in an modified AIX 200/4 system. The large lattice and thermal mismatch prevents the direct deposition of GaN on Si and also causes GaN layers grown on Si to crack severely. It is hence necessary to use buffer layers to alleviate this lattice and thermal mismatch. Several buffer layer schemes are used for this purpose. The crystal quality of the AlGaN/GaN heterostructures grown under various conditions on these buffers are studied using several methods like Photoluminescence, X-ray diffraction, Electron Microscopy etc. The quality of heterostructures grown on these buffers is compared in order to identify the strengths and weaknesses of each buffer and to also map the effects of process parameters on nitride layers deposited on each buffer.

  8. PECVD low stress silicon nitride analysis and optimization for the fabrication of CMUT devices

    NASA Astrophysics Data System (ADS)

    Bagolini, Alvise; Savoia, Alessandro Stuart; Picciotto, Antonino; Boscardin, Maurizio; Bellutti, Pierluigi; Lamberti, Nicola; Caliano, Giosuè

    2015-01-01

    Two technological options to achieve a high deposition rate, low stress plasma-enhanced chemical vapor deposition (PECVD) silicon nitride to be used in capacitive micromachined ultrasonic transducers (CMUT) fabrication are investigated and presented. Both options are developed and implemented on standard production line PECVD equipment in the framework of a CMUT technology transfer from R & D to production. A tradeoff between deposition rate, residual stress and electrical properties is showed. The first option consists in a double layer of silicon nitride with a relatively high deposition rate of ~100 nm min-1 and low compressive residual stress, which is suitable for the fabrication of the thick nitride layer used as a mechanical support of the CMUTs. The second option involves the use of a mixed frequency low-stress silicon nitride with outstanding electrical insulation capability, providing improved mechanical and electrical integrity of the CMUT active layers. The behavior of the nitride is analyzed as a function of deposition parameters and subsequent annealing. The nitride layer characterization is reported in terms of interfaces density influence on residual stress, refractive index, deposition rate, and thickness variation both as deposited and after thermal treatment. A sweet spot for stress stability is identified at an interfaces density of 0.1 nm-1, yielding 87 MPa residual stress after annealing. A complete CMUT device fabrication is reported using the optimized nitrides. The CMUT performance is tested, demonstrating full functionality in ultrasound imaging applications and an overall performance improvement with respect to previous devices fabricated with non-optimized silicon nitride.

  9. Hafnium nitride buffer layers for growth of GaN on silicon

    DOEpatents

    Armitage, Robert D.; Weber, Eicke R.

    2005-08-16

    Gallium nitride is grown by plasma-assisted molecular-beam epitaxy on (111) and (001) silicon substrates using hafnium nitride buffer layers. Wurtzite GaN epitaxial layers are obtained on both the (111) and (001) HfN/Si surfaces, with crack-free thickness up to 1.2 {character pullout}m. However, growth on the (001) surface results in nearly stress-free films, suggesting that much thicker crack-free layers could be obtained.

  10. Modulation of the propagation speed of mechanical waves in silicon quantum dots embedded in a silicon-nitride film.

    PubMed

    Torres-Torres, C; López-Suárez, A; Torres-Martínez, R; Rodriguez, A; Reyes-Esqueda, J A; Castañeda, L; Alonso, J C; Oliver, A

    2012-02-13

    Using a vectorial picosecond self-diffraction method, we evaluate the modification of the speed of the sound in a silicon-nitride film containing silicon quantum dots prepared by remote plasma-enhanced chemical vapor deposition. Our non-contact technique is based on the stimulation of the electrostriction contribution to the nonlinearity of index exhibited by the sample in a multiwave mixing laser experiment. We identified the electronic birefringence using two of the incident beams to generate a self-diffraction signal, then, we modified the third order nonlinear response by means of the optical Kerr effect given by a phase-mismatched third beam which induced electrostriction. Our results indicated that the speed of the sound in a silicon-nitride film can be simultaneously tailored by an electronic nonlinear refractive index, and by an electrostriction effect, both resulting from silicon quantum dots doping.

  11. Ab initio design of nanostructures for solar energy conversion: a case study on silicon nitride nanowire.

    PubMed

    Pan, Hui

    2014-01-01

    Design of novel materials for efficient solar energy conversion is critical to the development of green energy technology. In this work, we present a first-principles study on the design of nanostructures for solar energy harvesting on the basis of the density functional theory. We show that the indirect band structure of bulk silicon nitride is transferred to direct bandgap in nanowire. We find that intermediate bands can be created by doping, leading to enhancement of sunlight absorption. We further show that codoping not only reduces the bandgap and introduces intermediate bands but also enhances the solubility of dopants in silicon nitride nanowires due to reduced formation energy of substitution. Importantly, the codoped nanowire is ferromagnetic, leading to the improvement of carrier mobility. The silicon nitride nanowires with direct bandgap, intermediate bands, and ferromagnetism may be applicable to solar energy harvesting.

  12. Formation of ultrathin nitrided SiO{sub 2} oxides by direct nitrogen implantation into silicon

    SciTech Connect

    Soleimani, H.R.; Doyle, B.S.; Philipossian, A.

    1995-08-01

    A nitridation technique is proposed for ultrathin, SiO{sub 2} oxides in deep submicron CMOS technology, which involves direct implantation of molecular nitrogen (N{sub 2}) into the silicon substrate. N{sub 2} ions were implanted into silicon at different doses and energies, through a 150 {angstrom} thick screen oxide. In this study the effect of implanted N atoms on silicon oxidation, and SiO{sub 2} oxide nitridation process have been studied. Two groups of the N{sub 2}-implanted wafers were used: wafers from one group were annealed prior to the screen oxide removal, whereas wafers of the other group did not receive this anneal. It is shown that nitridation can be achieved both ways, allowing this technique to be easily integrated into a semiconductor IC fabrication process.

  13. Indentation flaw formation and strength response of silicon nitride ceramics at low indentation loads

    NASA Technical Reports Server (NTRS)

    Choi, Sung R.; Salem, Jonathan A.

    1992-01-01

    The configuration and the strength response of indentation flaws in silicon nitrides are described as a function of indentation loads primarily near the threshold level. Test materials under consideration include 30 vol percent SiC whisker-reinforced composite silicon nitride and similar monolithic silicon nitride. The results of strength testing show that, at indentation loads less than or equal to 1.96, a number of the specimens fail from the intrinsic flaws of the materials rather than from the indent sites, causing a distinct trend to reach a plateau, at a level corresponding to the as-received strength of the material. The ratio of the mirror constant to the fracture toughness for the composite and monolithic materials is found to be 1.44 and 1.51, respectively.

  14. Si Passivation and Chemical Vapor Deposition of Silicon Nitride: Final Technical Report, March 18, 2007

    SciTech Connect

    Atwater, H. A.

    2007-11-01

    This report investigated chemical and physical methods for Si surface passivation for application in crystalline Si and thin Si film photovoltaic devices. Overall, our efforts during the project were focused in three areas: i) synthesis of silicon nitride thin films with high hydrogen content by hot-wire chemical vapor deposition; ii) investigation of the role of hydrogen passivation of defects in crystalline Si and Si solar cells by out diffusion from hydrogenated silicon nitride films; iii) investigation of the growth kinetics and passivation of hydrogenated polycrystalline. Silicon nitride films were grown by hot-wire chemical vapor deposition and film properties have been characterized as a function of SiH4/NH3 flow ratio. It was demonstrated that hot-wire chemical vapor deposition leads to growth of SiNx films with controllable stoichiometry and hydrogen.

  15. Tensile test of pressureless-sintered silicon nitride at elevated temperature

    NASA Technical Reports Server (NTRS)

    Matsusue, K.; Fujisawa, Y.; Takahara, K.

    1985-01-01

    Uniaxial tensile strength tests of pressureless sintered silicon nitride were carried out in air at temperatures ranging from room temperature up to 1600 C. Silicon nitrides containing Y2O3, Al2O3, Al2O3-MgO, or MgO-CeO2 additives were tested. The results show that the composition of the additive used influences the strength characteristics of the silicon nitride. The tensile strength rapidly decreased at temperatures above 1000 C for the materials containing MgO as the additive and above 1000 C for the material with Y2O3. When the temperature increased to as high as 1300 C, the strength decreased to about 10 percent of the room temperature strength in each case. Observations of the fracture origin and of the crack propagation on the fracture surfaces are discussed.

  16. Ultrananocrystalline Diamond-Coated Microporous Silicon Nitride Membranes for Medical Implant Applications

    NASA Astrophysics Data System (ADS)

    Skoog, Shelby A.; Sumant, Anirudha V.; Monteiro-Riviere, Nancy A.; Narayan, Roger J.

    2012-04-01

    Ultrananocrystalline diamond (UNCD) exhibits excellent biological and mechanical properties, which make it an appropriate choice for promoting epidermal cell migration on the surfaces of percutaneous implants. We deposited a ~150 nm thick UNCD film on a microporous silicon nitride membrane using microwave plasma chemical vapor deposition. Scanning electron microscopy and Raman spectroscopy were used to examine the pore structure and chemical bonding of this material, respectively. Growth of human epidermal keratinocytes on UNCD-coated microporous silicon nitride membranes and uncoated microporous silicon nitride membranes was compared using the 3-(4,5-dimethylthiazol-2-yl)2,5-diphenyltetrazolium bromide (MTT) assay. The results show that the UNCD coating did not significantly alter the viability of human epidermal keratinocytes, indicating potential use of this material for improving skin sealing around percutaneous implants.

  17. Effect of post-deposition implantation and annealing on the properties of PECVD deposited silicon nitride films

    SciTech Connect

    Shams, Q.A.

    1988-01-01

    Recently it has been shown that memory-quality silicon nitride can be deposited using plasma enhanced chemical vapor deposition (PECVD). Nitrogen implantation and post-deposition annealing resulted in improved memory properties of MNOS devices. The primary objective of the work described here is the continuation of the above work. Silicon nitride films were deposited using argon as the carrier gas and evaluated in terms of memory performance as the charge-trapping layer in the metal-nitride-oxide-silicon (MNOS) capacitor structure. The bonding structure of PECVD silicon nitride was modified by annealing in different ambients at temperatures higher than the deposition temperature. Post-deposition ion implantation was used to introduce argon into the films in an attempt to influence the transfer, trapping, and emission of charge during write/erase exercising of the MNOS devices. Results show that the memory performance of PECVD silicon nitride is sensitive to the deposition parameters and post-deposition processing.

  18. Processing and mechanical properties of silicon nitride/silicon carbide ceramic nanocomposites derived from polymer precursors

    NASA Astrophysics Data System (ADS)

    Gasch, Matthew Jeremy

    Creep deformation of silicon nitride and silicon carbide ceramics is dominated by a solution-precipitation process through the glassy interface phase at grain boundary regions, which is formed by the reaction of oxide additives with the silicon oxide surface layer of the ceramic powder particles during liquid phase sintering. The ultimate approach to increase the creep resistance of these materials is to decrease the oxide content at the grain boundaries, rendering the solution-precipitation process non-effective. This research presents a new method of enhancing the creep properties of silicon nitride/silicon carbide composites by forming micro-nano and nano-nano microstructures during sintering. Starting from amorphous Si-C-N powders of micrometric size particles, powders were consolidated in three ways: (1) Consolidation of pyrolyzed powders without additives, (2) Electric Field Assisted Sintering (EFAS) of pyrolyzed powders with and without additives and (3) High pressure sintering. In all three cases, nanocomposites with varied grain size were achieved. High temperature mechanical creep testing was performed on the samples sintered by EFAS. Creep rates ranged from 1 x 10-8/s to 1 x 10-11/s depending on method in which powders were prepared and total oxide additive amount. For samples with high oxide contents the stress exponent was found to be n ˜ 2 with an activation energy of Q ˜ 600kJ/mol*K, indicating the typical solution precipitation process of deformation. But for the nano-nano composites sintered with little to none oxide additive, the stress exponent was found to be n ˜ 1 with and activation energy of Q ˜ 200kJ/mol*K, hinting at a diffusion controlled mechanism of creep deformation. For the nano-nano composites sintered without oxide additives, oxygen was found in the microstructure. However, oxygen contamination was found to distribute at grain boundary regions especially triple junctions. It is suggested that this highly dispersed distribution of

  19. Critical flaw size in silicon nitride ball bearings

    NASA Astrophysics Data System (ADS)

    Levesque, George Arthur

    Aircraft engine and bearing manufacturers have been aggressively pursuing advanced materials technology systems solutions to meet main shaft-bearing needs of advanced military aircraft engines. Ceramic silicon nitride hybrid bearings are being developed for such high performance applications. Though silicon nitride exhibits many favorable properties such as high compressive strength, high hardness, a third of the density of steel, low coefficient of thermal expansion, and high corrosion and temperature resistance, they also have low fracture toughness and are susceptible to failure from fatigue spalls emanating from pre-existing surface flaws that can grow under rolling contact fatigue (RCF). Rolling elements and raceways are among the most demanding components in aircraft engines due to a combination of high cyclic contact stresses, long expected component lifetimes, corrosive environment, and the high consequence of fatigue failure. The cost of these rolling elements increases exponentially with the decrease in allowable flaw size for service applications. Hence the range of 3D non-planar surface flaw geometries subject to RCF is simulated to determine the critical flaw size (CFS) or the largest allowable flaw that does not grow under service conditions. This dissertation is a numerical and experimental investigation of surface flaws in ceramic balls subjected to RCF and has resulted in the following analyses: Crack Shape Determination: the nucleation of surface flaws from ball impact that occurs during the manufacturing process is simulated. By examining the subsurface Hertzian stresses between contacting spheres, their applicability to predicting and characterizing crack size and shape is established. It is demonstrated that a wide range of cone and partial cone cracks, observed in practice, can be generated using the proposed approaches. RCF Simulation: the procedure and concerns in modeling nonplanar 3D cracks subject to RCF using FEA for stress intensity

  20. Effects of surface grinding conditions on the reciprocating friction and wear behavior of silicon nitride

    SciTech Connect

    Blau, P.J.; Martin, R.L.; Zanoria, E.S.

    1997-12-31

    The relationship between two significantly different surface grinding conditions and the reciprocating ball-on-flat friction and wear behavior of a high-quality, structural silicon nitride material (GS-44) was investigated. The slider materials were silicon nitride NBD 200 and 440C stainless steel. Two machining conditions were selected based on extensive machining and flexural strength test data obtained under the auspices of an international, interlaboratory grinding study. The condition categorized as {open_quotes}low strength{close_quote} grinding used a coarse 80 grit wheel and produced low flexure strength due to machining-induced flaws in the surface. The other condition, regarded as {open_quotes}high strength grinding,{close_quotes} utilized a 320 grit wheel and produced a flexural strength nearly 70% greater. Grinding wheel surface speeds were 35 and 47 m/s. Reciprocating sliding tests were conducted following the procedure described in a newly-published ASTM standard (G- 133) for linearly-reciprocating wear. Tests were performed in directions both parallel and perpendicular to the grinding marks (lay) using a 25 N load, 5 Hz reciprocating frequency, 10 mm stroke length, and 100 m of sliding at room temperature. The effects of sliding direction relative to the lay were more pronounced for stainless steel than for silicon nitride sliders. The wear of stainless steel was less than the wear of the silicon nitride slider materials because of the formation of transfer particles which covered the sharp edges of the silicon nitride grinding grooves and reduced abrasive contact. The wear of the GS-44 material was much greater for the silicon nitride sliders than for the stainless steel sliders. The causes for the effects of surface-grinding severity and sliding direction on friction and wear of GS-44 and its counterface materials are explained.

  1. Comparative investigation of the biocompatibility of various silicon nitride ceramic qualities in vitro.

    PubMed

    Neumann, A; Reske, T; Held, M; Jahnke, K; Ragoss, C; Maier, H R

    2004-10-01

    There is a controversy about the biocompatibility of silicon nitride ceramics contained in the literature, which appears to be related to a factor of the individual chemical composition of different qualities of silicon nitride ceramics and of the different surface properties. This study attempts to investigate the cytotoxicity of different qualities of industrial silicon nitride ceramics applying an L929-cell culture model in a direct contact assay combined with a cell viability assessment. Five different qualities of industrial standard silicon nitride ceramics were chosen for in vitro testing. The chemical composition was determined by EDS analysis. Different biomedically approved aluminium oxide qualities, a titanium alloy, glass and polyvinylchloride (PVC) served as control materials. L929 mice fibroblasts were incubated directly on the materials for 24 h, stained with bisbenzimide and propidium iodine for double fluorochromasia viability testing, and evaluated by inversion-fluorescence microscopy to control cell morphology, viability and cell counts compared to empty well values. Scanning electron microscopy was applied to additionally investigate cell morphology. There was no observation of cytotoxic effects on the silicon nitride ceramic samples; moreover cell morphology remained the same as on aluminium oxide and titanium. Viability testing revealed the presence of avital cells exclusively on PVC, which served as a negative control. Cell counts on all polished surfaces showed significantly higher numbers, whereas some rough surface samples showed significantly lower numbers. We conclude that silicon nitride ceramics show no cytotoxic effects and should be considered for biomedical application owing to its favourable physiochemical properties, especially its superior resistance to mechanical stress, which would be useful for compression loaded conditions. Polished surfaces would appear to promote advanced biocompatibility.

  2. Antifuse with a single silicon-rich silicon nitride insulating layer

    DOEpatents

    Habermehl, Scott D.; Apodaca, Roger T.

    2013-01-22

    An antifuse is disclosed which has an electrically-insulating region sandwiched between two electrodes. The electrically-insulating region has a single layer of a non-hydrogenated silicon-rich (i.e. non-stoichiometric) silicon nitride SiN.sub.X with a nitrogen content X which is generally in the range of 0silicon. Arrays of antifuses can also be formed.

  3. The thermal conductivity of silicon nitride with molybdenum disilicide additions

    SciTech Connect

    Beecher, S.C.; Dinwiddie, R.B.; Abeel, A.M.; Lowden, R.A.

    1993-12-31

    Room-temperature thermal conductivity has been measured for a series of silicon nitride (Si{sub 3}N{sub 4}) matrix composites with molybdenum disilicide (MoSi{sub 2}) additions of 2, 5 10, 25 and 50 wt. %. Included in these measurements were a pure MoSi{sub 2} sample and a Si{sub 3}N{sub 4} sample containing only sintering aids. Aluminum oxide (Al{sub 2}O{sub 3}) and yttrium oxide (Y{sub 2}O{sub 3}) were added as the sintering aids, at approximately 6 and 2 respectively. When the amount of MoSi{sub 2} was increased to greater than 10 wt. %, the amount of the sintering aids necessary to densify the composite was decreased. No sintering aids were added to the pure MoSi{sub 2} sample. Thermal conductivities of the Si{sub 3}N{sub 4} sample without MoSi{sub 2} and the pure MoSi{sub 2} sample wee 36 W/m.K and 52 W/m.K respectively, which agree very well with the literature values for similar materials. No statistically significant changes were observed in the thermal conductivity for those samples containing up to 10 wt. % MoSi{sub 2}. However, between 10 and 25 wt. % MoSi{sub 2} there was a dramatic decrease in the thermal conductivity from 37 to 20.9 W/m.K. The thermal conductivity then increased steadily with further additions of MoSi{sub 2} up to 52 W/m.K for the pure MoSi{sub 2} specimen.

  4. Si quantum dots in silicon nitride: Quantum confinement and defects

    SciTech Connect

    Goncharova, L. V. Karner, V. L.; D'Ortenzio, R.; Chaudhary, S.; Mokry, C. R.; Simpson, P. J.; Nguyen, P. H.

    2015-12-14

    Luminescence of amorphous Si quantum dots (Si QDs) in a hydrogenated silicon nitride (SiN{sub x}:H) matrix was examined over a broad range of stoichiometries from Si{sub 3}N{sub 2.08} to Si{sub 3}N{sub 4.14}, to optimize light emission. Plasma-enhanced chemical vapor deposition was used to deposit hydrogenated SiN{sub x} films with excess Si on Si (001) substrates, with stoichiometry controlled by variation of the gas flow rates of SiH{sub 4} and NH{sub 3} gases. The compositional and optical properties were analyzed by Rutherford backscattering spectroscopy, elastic recoil detection, spectroscopic ellipsometry, photoluminescence (PL), time-resolved PL, and energy-filtered transmission electron microscopy. Ultraviolet-laser-excited PL spectra show multiple emission bands from 400 nm (3.1 eV) to 850 nm (1.45 eV) for different Si{sub 3}N{sub x} compositions. There is a red-shift of the measured peaks from ∼2.3 eV to ∼1.45 eV as Si content increases, which provides evidence for quantum confinement. Higher N content samples show additional peaks in their PL spectra at higher energies, which we attribute to defects. We observed three different ranges of composition where Tauc band gaps, PL, and PL lifetimes change systematically. There is an interesting interplay of defect luminescence and, possibly, small Si QD luminescence observed in the intermediate range of compositions (∼Si{sub 3}N{sub 3.15}) in which the maximum of light emission is observed.

  5. Process for producing high purity silicon nitride by the direct reaction between elemental silicon and nitrogen-hydrogen liquid reactants

    DOEpatents

    Pugar, Eloise A.; Morgan, Peter E. D.

    1990-01-01

    A process is disclosed for producing, at a low temperature, a high purity reaction product consisting essentially of silicon, nitrogen, and hydrogen which can then be heated to produce a high purity alpha silicon nitride. The process comprises: reacting together a particulate elemental high purity silicon with a high purity nitrogen-hydrogen reactant in its liquid state (such as ammonia or hydrazine) having the formula: N.sub.n H.sub.(n+m) wherein: n=1-4 and m=2 when the nitrogen-hydrogen reactant is straight chain, and 0 when the nitrogen-hydrogen reactant is cyclic. High purity silicon nitride can be formed from this intermediate product by heating the intermediate product at a temperature of from about 1200.degree.-1700.degree. C. for a period from about 15 minutes up to about 2 hours to form a high purity alpha silicon nitride product. The discovery of the existence of a soluble Si-N-H intermediate enables chemical pathways to be explored previously unavailable in conventional solid state approaches to silicon-nitrogen ceramics.

  6. Process for producing high purity silicon nitride by the direct reaction between elemental silicon and nitrogen-hydrogen liquid reactants

    DOEpatents

    Pugar, E.A.; Morgan, P.E.D.

    1987-09-15

    A process is disclosed for producing, at a low temperature, a high purity reaction product consisting essentially of silicon, nitrogen, and hydrogen which can then be heated to produce a high purity alpha silicon nitride. The process comprises: reacting together a particulate elemental high purity silicon with a high purity nitrogen-hydrogen reactant in its liquid state (such as ammonia or hydrazine) having the formula: N/sub n/H/sub (n+m)/ wherein: n = 1--4 and m = 2 when the nitrogen-hydrogen reactant is straight chain, and 0 when the nitrogen-hydrogen reactant is cyclic. High purity silicon nitride can be formed from this intermediate product by heating the intermediate product at a temperature of from about 1200--1700/degree/C for a period from about 15 minutes up to about 2 hours to form a high purity alpha silicon nitride product. The discovery of the existence of a soluble Si/endash/N/endash/H intermediate enables chemical pathways to be explored previously unavailable in conventional solid-state approaches to silicon-nitrogen ceramics

  7. Octave-spanning supercontinuum generation in a silicon-rich nitride waveguide.

    PubMed

    Liu, Xing; Pu, Minhao; Zhou, Binbin; Krückel, Clemens J; Fülöp, Attila; Torres-Company, Victor; Bache, Morten

    2016-06-15

    We experimentally show octave-spanning supercontinuum generation in a nonstoichiometric silicon-rich nitride waveguide when pumped by femtosecond pulses from an erbium fiber laser. The pulse energy and bandwidth are comparable to results achieved in stoichiometric silicon nitride waveguides, but our material platform is simpler to manufacture. We also observe wave-breaking supercontinuum generation by using orthogonal pumping in the same waveguide. Additional analysis reveals that the waveguide height is a powerful tuning parameter for generating mid-infrared dispersive waves while keeping the pump in the telecom band.

  8. Fabrication and characterization of on-chip silicon nitride microdisk integrated with colloidal quantum dots.

    PubMed

    Xie, Weiqiang; Zhu, Yunpeng; Aubert, Tangi; Hens, Zeger; Brainis, Edouard; Van Thourhout, Dries

    2016-01-25

    We designed and fabricated free-standing, waveguide-coupled silicon nitride microdisks hybridly integrated with embedded colloidal quantum dots. An efficient coupling of quantum dot emission to resonant disk modes and eventually to the access waveguides is demonstrated. The amount of light coupled out to the access waveguide can be tuned by controlling its dimensions and offset with the disk edge. These devices open up new opportunities for both on-chip silicon nitride integrated photonics and novel optoelectronic devices with quantum dots.

  9. Hot isostatic pressing of silicon nitride Sisub3n4 containing zircon, or zirconia and silica

    NASA Technical Reports Server (NTRS)

    Somiya, S.; Yoshimura, M.; Suzuki, T.; Nishimura, H.

    1980-01-01

    A hydrothermal synthesis apparatus with a 10 KB cylinder was used to obtain a sintered body of silicon nitride. The sintering auxiliary agents used were zircon (ZrSiO4) and a mixture of zirconia (ZrO2) and silica (SiO2). Experiments were conducted with the amounts of ZrSi04 or ArO2 and SiO2 varying over a wide range and the results compared to discover the quantity of additive which produced sintering in silicon nitride by the hot pressing method.

  10. Alternative Liquid Fuel Effects on Cooled Silicon Nitride Marine Gas Turbine Airfoils

    SciTech Connect

    Holowczak, J.

    2002-03-01

    With prior support from the Office of Naval Research, DARPA, and U.S. Department of Energy, United Technologies is developing and engine environment testing what we believe to be the first internally cooled silicon nitride ceramic turbine vane in the United States. The vanes are being developed for the FT8, an aeroderivative stationary/marine gas turbine. The current effort resulted in further manufacturing and development and prototyping by two U.S. based gas turbine grade silicon nitride component manufacturers, preliminary development of both alumina, and YTRIA based environmental barrier coatings (EBC's) and testing or ceramic vanes with an EBC coating.

  11. Octave-spanning supercontinuum generation in a silicon-rich nitride waveguide

    NASA Astrophysics Data System (ADS)

    Liu, Xing; Pu, Minhao; Zhou, Binbin; Krückel, Clemens J.; Fülöp, Attila; Torres-Company, Victor; Bache, Morten

    2016-06-01

    We experimentally show octave-spanning supercontinuum generation in a non-stoichiometric silicon-rich nitride waveguide when pumped by femtosecond pulses from an erbium fiber laser. The pulse energy and bandwidth are comparable to results achieved in stoichiometric silicon nitride waveguides, but our material platform is simpler to manufacture. We also observe wave-breaking supercontinuum generation by using orthogonal pumping in the same waveguide. Additional analysis reveals that the waveguide height is a powerful tuning parameter for generating mid-infrared dispersive waves while keeping the pump in the telecom band.

  12. First-principles investigation of band offsets and dielectric properties of Silicon-Silicon Nitride interfaces

    NASA Astrophysics Data System (ADS)

    Pham, Tuan Anh; Li, Tianshu; Gygi, Francois; Galli, Giulia

    2011-03-01

    Silicon Nitride (Si3N4) is a possible candidate material to replace or be alloyed with SiO2 to form high-K dielectric films on Si substrates, so as to help prevent leakage currents in modern CMOS transistors. Building on our previous work on dielectric properties of crystalline and amorphous Si3N4 slabs, we present an analysis of the band offsets and dielectric properties of crystalline-Si/amorphous Si3N4 interfaces based on first principles calculations. We discuss shortcomings of the conventional bulk-plus line up approach in band offset calculations for systems with an amorphous component, and we present the results of band offsets obtained from calculations of local density of states. Finally, we describe the role of bonding configurations in determining band edges and dielectric constants at the interface. We acknowledge financial support from Intel Corporation.

  13. Process for the production of metal nitride sintered bodies and resultant silicon nitride and aluminum nitride sintered bodies

    NASA Technical Reports Server (NTRS)

    Yajima, S.; Omori, M.; Hayashi, J.; Kayano, H.; Hamano, M.

    1983-01-01

    A process for the manufacture of metal nitride sintered bodies, in particular, a process in which a mixture of metal nitrite powders is shaped and heated together with a binding agent is described. Of the metal nitrides Si3N4 and AIN were used especially frequently because of their excellent properties at high temperatures. The goal is to produce a process for metal nitride sintered bodies with high strength, high corrosion resistance, thermal shock resistance, thermal shock resistance, and avoidance of previously known faults.

  14. Passivation of c-Si surfaces by sub-nm amorphous silicon capped with silicon nitride

    SciTech Connect

    Wan, Yimao Yan, Di; Bullock, James; Zhang, Xinyu; Cuevas, Andres

    2015-12-07

    A sub-nm hydrogenated amorphous silicon (a-Si:H) film capped with silicon nitride (SiN{sub x}) is shown to provide a high level passivation to crystalline silicon (c-Si) surfaces. When passivated by a 0.8 nm a-Si:H/75 nm SiN{sub x} stack, recombination current density J{sub 0} values of 9, 11, 47, and 87 fA/cm{sup 2} are obtained on 10 Ω·cm n-type, 0.8 Ω·cm p-type, 160 Ω/sq phosphorus-diffused, and 120 Ω/sq boron-diffused silicon surfaces, respectively. The J{sub 0} on n-type 10 Ω·cm wafers is further reduced to 2.5 ± 0.5 fA/cm{sup 2} when the a-Si:H film thickness exceeds 2.5 nm. The passivation by the sub-nm a-Si:H/SiN{sub x} stack is thermally stable at 400 °C in N{sub 2} for 60 min on all four c-Si surfaces. Capacitance–voltage measurements reveal a reduction in interface defect density and film charge density with an increase in a-Si:H thickness. The nearly transparent sub-nm a-Si:H/SiN{sub x} stack is thus demonstrated to be a promising surface passivation and antireflection coating suitable for all types of surfaces encountered in high efficiency c-Si solar cells.

  15. Analysis of Anionic Polymer Dispersant Behavior in Dense Silicon Nitride and Carbide Suspensions Using an AFM

    NASA Astrophysics Data System (ADS)

    Nojiri, M.; Matsui, S.; Hasegawa, H.; Ono, T.; Fukuda, Y.; Tsukada, M.; Kamiya, H.

    2001-06-01

    The paper focuses on the interaction mechanism caused by anionic polymer dispersants in dense silicon nitride and silicon carbide suspensions. An atomic force microscope (AFM) was used to determine the relationship between the macroscopic suspension viscosity and the microscopic structure adsorbing of a polymer dispersant at the solid/liquid interface. The surface interactions within the suspensions were analyzed under various dispersant pH values and additive conditions. The addition of an anionic polymer dispersant decreased the viscosity of silicon nitride and silicon carbide suspension and increased the electrosteric repulsive force on the non-oxide surface in solution at pH > 6, which was the isoelectric point of the materials. Based on the above results, we estimated the adsorption mechanism of anionic polymer dispersants on each solid surface in solution under relatively high pH conditions.

  16. Dislocation Emission at the Silicon/Silicon Nitride Interface: A Million Atom Molecular Dynamics Simulation on Parallel Computers

    NASA Astrophysics Data System (ADS)

    Bachlechner, Martina E.; Omeltchenko, Andrey; Nakano, Aiichiro; Kalia, Rajiv K.; Vashishta, Priya; Ebbsjö, Ingvar; Madhukar, Anupam

    2000-01-01

    Mechanical behavior of the Si\\(111\\)/Si3N4\\(0001\\) interface is studied using million atom molecular dynamics simulations. At a critical value of applied strain parallel to the interface, a crack forms on the silicon nitride surface and moves toward the interface. The crack does not propagate into the silicon substrate; instead, dislocations are emitted when the crack reaches the interface. The dislocation loop propagates in the \\(1¯ 1¯1\\) plane of the silicon substrate with a speed of 500 \\(+/-100\\) m/s. Time evolution of the dislocation emission and nature of defects is studied.

  17. Dislocation emission at the Silicon/Silicon nitride interface: A million atom molecular dynamics simulation on parallel computers

    PubMed

    Bachlechner; Omeltchenko; Nakano; Kalia; Vashishta; Ebbsjo; Madhukar

    2000-01-10

    Mechanical behavior of the Si(111)/Si(3)N4(0001) interface is studied using million atom molecular dynamics simulations. At a critical value of applied strain parallel to the interface, a crack forms on the silicon nitride surface and moves toward the interface. The crack does not propagate into the silicon substrate; instead, dislocations are emitted when the crack reaches the interface. The dislocation loop propagates in the (1; 1;1) plane of the silicon substrate with a speed of 500 (+/-100) m/s. Time evolution of the dislocation emission and nature of defects is studied.

  18. Effect of composition on the processing and properties of sintered reaction-bonded silicon nitride

    SciTech Connect

    Tiegs, T.N.; Kiggans, J.O.; Montgomery, F.C.; Lin, H.T.; Barker, D.L.; Snodgrass, J.D.; Sabolsky, E.M.; Coffey, D.W.

    1996-04-01

    The type of silicon powder and sintering additive were found to influence the processing and final mechanical properties of sintered reaction bonded silicon nitride. High purity silicon powders produced low {alpha}-Si{sub 3}N{sub 4} content during nitridation. The Si powder type had no apparent effect on densification. More complete nitridation and higher room temperature mechanical properties were observed for the Si powders with higher Fe contents. However, the higher Fe contents resulted in greater high temperature strength degradation and so there was better high temperature strength retention with the higher purity Si. High {alpha}-Si{sub 3}N{sub 4} contents were found after nitridation with {alpha}-Si{sub 3}N{sub 4} seeded materials and with MgO-Y{sub 2}O{sub 3} as the sintering additive. Densification was inhibited by refractory additives, such as Y{sub 2}O{sub 3}-SiO{sub 2}. The highest room temperature strength and fracture toughness values correlated to high nitrided {alpha}-Si{sub 3}N{sub 4} contents. The high temperature strength behavior was similar for all additive types.

  19. Intense green-yellow electroluminescence from Tb+-implanted silicon-rich silicon nitride/oxide light emitting devices

    NASA Astrophysics Data System (ADS)

    Berencén, Y.; Wutzler, R.; Rebohle, L.; Hiller, D.; Ramírez, J. M.; Rodríguez, J. A.; Skorupa, W.; Garrido, B.

    2013-09-01

    High optical power density of 0.5 mW/cm2, external quantum efficiency of 0.1%, and population inversion of 7% are reported from Tb+-implanted silicon-rich silicon nitride/oxide light emitting devices. Electrical and electroluminescence mechanisms in these devices were investigated. The excitation cross section for the 543 nm Tb3+ emission was estimated under electrical pumping, resulting in a value of 8.2 × 10-14 cm2, which is one order of magnitude larger than one reported for Tb3+:SiO2 light emitting devices. These results demonstrate the potentiality of Tb+-implanted silicon nitride material for the development of integrated light sources compatible with Si technology.

  20. Sol-gel preparation of low oxygen content, high surface area silicon nitride and imidonitride materials.

    PubMed

    Sardar, Kripasindhu; Bounds, Richard; Carravetta, Marina; Cutts, Geoffrey; Hargreaves, Justin S J; Hector, Andrew L; Hriljac, Joseph A; Levason, William; Wilson, Felix

    2016-04-07

    Reactions of Si(NHMe)4 with ammonia are effectively catalysed by small ammonium triflate concentrations, and can be used to produce free-standing silicon imide gels. Firing at various temperatures produces amorphous or partially crystallised silicon imidonitride/nitride samples with high surface areas and low oxygen contents. The crystalline phase is entirely α-Si3N4 and structural similarities are observed between the amorphous and crystallised materials.

  1. Process Development and Property Evaluation of Organosilicon Infiltrated Reaction Sintered Silicon Nitride (RSSN).

    DTIC Science & Technology

    1982-01-01

    obligations, or notice on a specific document. :77* L : UNCLASSIFIED SEtCURITy CLASIFICATIN Or T041’ PAEf’. (Whson flt*a Enfepod) REPORT DOCUMENTATION PAGE... l . SUPPLEMENTARY NOTES 19. KEY WORDS (Confinuo on revere side it neceeary end Identify by block number) Silicon Base Ceramics Silicon Nitride...I CH3 H CH3 H (c) Polydimethylsilazane (d) Polymethylsesquisilazane The materials used in prior infiltration and ceramic powder binder studies l

  2. Surface modification of silicon dioxide, silicon nitride and titanium oxynitride for lactate dehydrogenase immobilization.

    PubMed

    Saengdee, Pawasuth; Chaisriratanakul, Woraphan; Bunjongpru, Win; Sripumkhai, Witsaroot; Srisuwan, Awirut; Jeamsaksiri, Wutthinan; Hruanun, Charndet; Poyai, Amporn; Promptmas, Chamras

    2015-05-15

    Three different types of surface, silicon dioxide (SiO2), silicon nitride (Si3N4), and titanium oxynitride (TiON) were modified for lactate dehydrogenase (LDH) immobilization using (3-aminopropyl)triethoxysilane (APTES) to obtain an amino layer on each surface. The APTES modified surfaces can directly react with LDH via physical attachment. LDH can be chemically immobilized on those surfaces after incorporation with glutaraldehyde (GA) to obtain aldehyde layers of APTES-GA modified surfaces. The wetting properties, chemical bonding composition, and morphology of the modified surface were determined by contact angle (CA) measurement, Fourier transform infrared (FTIR) spectroscopy, and scanning electron microscopy (SEM), respectively. In this experiment, the immobilized protein content and LDH activity on each modified surface was used as an indicator of surface modification achievement. The results revealed that both the APTES and APTES-GA treatments successfully link the LDH molecule to those surfaces while retaining its activity. All types of tested surfaces modified with APTES-GA gave better LDH immobilizing efficiency than APTES, especially the SiO2 surface. In addition, the SiO2 surface offered the highest LDH immobilization among tested surfaces, with both APTES and APTES-GA modification. However, TiON and Si3N4 surfaces could be used as alternative candidate materials in the preparation of ion-sensitive field-effect transistor (ISFET) based biosensors, including lactate sensors using immobilized LDH on the ISFET surface.

  3. High Temperature Corrosion of Silicon Carbide and Silicon Nitride in Water Vapor

    NASA Technical Reports Server (NTRS)

    Opila, E. J.; Robinson, Raymond C.; Cuy, Michael D.; Gray, Hugh R. (Technical Monitor)

    2002-01-01

    Silicon carbide (SiC) and silicon nitride (Si3N4) are proposed for applications in high temperature combustion environments containing water vapor. Both SiC and Si3N4 react with water vapor to form a silica (SiO2) scale. It is therefore important to understand the durability of SiC, Si3N4 and SiO2 in water vapor. Thermogravimetric analyses, furnace exposures and burner rig results were obtained for these materials in water vapor at temperatures between 1100 and 1450 C and water vapor partial pressures ranging from 0.1 to 3.1 atm. First, the oxidation of SiC and Si3N4 in water vapor is considered. The parabolic kinetic rate law, rate dependence on water vapor partial pressure, and oxidation mechanism are discussed. Second, the volatilization of silica to form Si(OH)4(g) is examined. Mass spectrometric results, the linear kinetic rate law and a volatilization model based on diffusion through a gas boundary layer are discussed. Finally, the combined oxidation and volatilization reactions, which occur when SiC or Si3N4 are exposed in a water vapor-containing environment, are presented. Both experimental evidence and a model for the paralinear kinetic rate law are shown for these simultaneous oxidation and volatilization reactions.

  4. Effect of attrition milling on the reaction sintering of silicon nitride

    NASA Technical Reports Server (NTRS)

    Herbell, T. P.; Glasgow, T. K.; Yeh, H. C.

    1978-01-01

    Silicon powder was ground in a steel attrition mill under nitrogen. Air-exposed powder was compacted, prefired in helium, and reaction-sintered in nitrogen-4 v/o hydrogen. For longer grinding times, oxygen content, surface area and compactability of the powder increased; and both alpha/beta ratio and degree of nitridation during sintering increased. Iron content remained constant.

  5. Improved reaction sintered silicon nitride. [protective coatings to improve oxidation resistance

    NASA Technical Reports Server (NTRS)

    Baumgartner, H. R.

    1978-01-01

    Processing treatments were applied to as-nitrided reaction sintered silicon nitride (RSSN) with the purposes of improving strength after processing to above 350 MN/m2 and improving strength after oxidation exposure. The experimental approaches are divided into three broad classifications: sintering of surface-applied powders; impregnation of solution followed by further thermal processing; and infiltration of molten silicon and subsequent carburization or nitridation of the silicon. The impregnation of RSSN with solutions of aluminum nitrate and zirconyl chloride, followed by heating at 1400-1500 C in a nitrogen atmosphere containing silicon monoxide, improved RSSN strength and oxidation resistance. The room temperature bend strength of RSSN was increased nearly fifty percent above the untreated strength with mean absolute strengths up to 420 MN/m2. Strengths of treated samples that were measured after a 12 hour oxidation exposure in air were up to 90 percent of the original as-nitrided strength, as compared to retained strengths in the range of 35 to 60 percent for untreated RSSN after the same oxidation exposure.

  6. Effect of attrition milling on the reaction sintering of silicon nitride

    NASA Technical Reports Server (NTRS)

    Herbell, T. P.; Glasgow, T. K.; Yeh, H. C.

    1978-01-01

    Silicon powder was ground in a steel attrition mill under nitrogen. Air exposed powder was compacted, prefired in helium, and reaction sintered in nitrogen-4 v/o hydrogen. For longer grinding times, oxygen content, surface area and compactability of the powder increased; and both alpha/beta ratio and degreee of nitridation during sintering increased. Iron content remained constant.

  7. Evaluation and silicon nitride internal combustion engine components. Final report, Phase I

    SciTech Connect

    Voldrich, W.

    1992-04-01

    The feasibility of silicon nitride (Si{sub 3}N{sub 4}) use in internal combustion engines was studied by testing three different components for wear resistance and lower reciprocating mass. The information obtained from these preliminary spin rig and engine tests indicates several design changes are necessary to survive high-stress engine applications. The three silicon nitride components tested were valve spring retainers, tappet rollers, and fuel pump push rod ends. Garrett Ceramic Components` gas-pressure sinterable Si{sub 3}N{sub 4} (GS-44) was used to fabricate the above components. Components were final machined from densified blanks that had been green formed by isostatic pressing of GS-44 granules. Spin rig testing of the valve spring retainers indicated that these Si{sub 3}N{sub 4} components could survive at high RPM levels (9,500) when teamed with silicon nitride valves and lower spring tension than standard titanium components. Silicon nitride tappet rollers showed no wear on roller O.D. or I.D. surfaces, steel axles and lifters; however, due to the uncrowned design of these particular rollers the cam lobes indicated wear after spin rig testing. Fuel pump push rod ends were successful at reducing wear on the cam lobe and rod end when tested on spin rigs and in real-world race applications.

  8. Study of phenomena related to the sintering process of silicon nitride at atmospheric pressure

    NASA Technical Reports Server (NTRS)

    Bertani, A.

    1982-01-01

    A procedure was perfected for the production of components used in engineering applications of silicon nitride. Particles of complex geometry that combine remarkable mechanical properties with a high density are obtained. The process developed, in contrast to the "hot pressing" method, does not use external pressures, and in contrast to the reaction bonding method, final densities close to the theoretical value are obtained.

  9. Experimental and theoretical evaluation of the laser-assisted machining of silicon nitride

    NASA Astrophysics Data System (ADS)

    Rozzi, Jay Christopher

    This study focused on the experimental and theoretical evaluation of the laser assisted machining (LAM) of silicon nitride ceramics. A laser assisted machining facility was constructed whose main components consist of a COsb2 laser and a CNC lathe. Surface temperature histories were first measured and compared to a transient, three-dimensional numerical simulation for a rotating silicon nitride workpiece heated by a translating laser for ranges of the workpiece rotational and laser-translation speeds, as well as the laser beam diameter and power. Excellent agreement was obtained between the experimental and predicted temperature histories. Laser assisted machining experiments on silicon nitride ceramic workpieces were completed for a wide range of operating conditions. Data for cutting forces and surface temperature histories illustrated that the lower bound for the avoidance of cutting tool and/or workpiece fracture for LAM is defined by the YSiAlON glass transition temperature (920-970sp°C). As temperatures near the cutting tool increase to values above the glass transition temperature range, the glassy phase softened, facilitating plastic deformation and, correspondingly, the production of semi-continuous or continuous chips. The silicon nitride machined workpiece surface roughness (Rsb{a}=0.39\\ mum) for LAM at the nominal operating condition was nearly equivalent to a value associated with the grinding of silicon nitride using a diamond wheel (Rsb{a}=0.2\\ mum). By examining the machined surfaces and chips, it was shown that LAM does not produce detectable sub-surface cracking or significant silicon nitride microstructure alteration, respectively. A transient, three-dimensional numerical heat transfer model of laser assisted machining was constructed, which includes a preheat phase and material removal, with the associated changes in the workplace geometry. Excellent agreement was obtained between the measured and predicted temperature histories. The strong

  10. Tantalum oxide/silicon nitride: A negatively charged surface passivation stack for silicon solar cells

    SciTech Connect

    Wan, Yimao Bullock, James; Cuevas, Andres

    2015-05-18

    This letter reports effective passivation of crystalline silicon (c-Si) surfaces by thermal atomic layer deposited tantalum oxide (Ta{sub 2}O{sub 5}) underneath plasma enhanced chemical vapour deposited silicon nitride (SiN{sub x}). Cross-sectional transmission electron microscopy imaging shows an approximately 2 nm thick interfacial layer between Ta{sub 2}O{sub 5} and c-Si. Surface recombination velocities as low as 5.0 cm/s and 3.2 cm/s are attained on p-type 0.8 Ω·cm and n-type 1.0 Ω·cm c-Si wafers, respectively. Recombination current densities of 25 fA/cm{sup 2} and 68 fA/cm{sup 2} are measured on 150 Ω/sq boron-diffused p{sup +} and 120 Ω/sq phosphorus-diffused n{sup +} c-Si, respectively. Capacitance–voltage measurements reveal a negative fixed insulator charge density of −1.8 × 10{sup 12 }cm{sup −2} for the Ta{sub 2}O{sub 5} film and −1.0 × 10{sup 12 }cm{sup −2} for the Ta{sub 2}O{sub 5}/SiN{sub x} stack. The Ta{sub 2}O{sub 5}/SiN{sub x} stack is demonstrated to be an excellent candidate for surface passivation of high efficiency silicon solar cells.

  11. Analysis of the luminescent centers in silicon rich silicon nitride light-emitting capacitors

    NASA Astrophysics Data System (ADS)

    Cabañas-Tay, S. A.; Palacios-Huerta, L.; Luna-López, J. A.; Aceves-Mijares, M.; Alcántara-Iniesta, S.; Pérez-García, S. A.; Morales-Sánchez, A.

    2015-06-01

    An analysis of the luminescent center and its effect on the optical, electrical and electro-optical properties of silicon rich silicon nitride (SRN) films deposited by low pressure chemical vapor deposition is reported. As-deposited SRN films emit a broad photoluminescence (PL) spectrum in the visible range where the maximum peak shifts from ∼490 to ∼590 nm as the silicon excess increases. After thermal annealing, a PL blue-shift is observed and it is ascribed to a compositional-dependent change in the concentration of defect states within the films. A correlation between the PL peak energy with the optical band-gap indicates that the luminescence is related to the band tail carrier recombination in the SRN films. Light emitting capacitors (LECs) based on fluor-doped tin oxide SnO2:F (FTO)/SRN active layer/n-Si substrate emit a broad electroluminescent spectra where the maximum emission peak blue-shifts when the polarity is changed from reverse to forward bias. In the reverse bias, the electroluminescence (EL) is related to the states of valence band tail and Si dangling bonds (K0 centers), while in the forward bias the EL is originated from electronic transitions from the conduction band minimum to K0 centers. A model based on the trap assisted tunneling carrier transport is correlated with the proposed EL radiative recombination process in the FTO/SRN/n-Si structures. A discussion of the differences between the PL and EL spectra is reported. The results open new alternatives toward the development of Si-based light emitters where two different EL spectra can be obtained changing the polarity.

  12. Comparison of properties of sintered and sintered reaction-bonded silicon nitride fabricated by microwave and conventional heating

    SciTech Connect

    Tiegs, T.N.; Kiggans, J.O. Jr.; Lin, H.T.; Willkens, C.A.

    1994-10-01

    A comparison of microwave and conventional processing of silicon nitride-based ceramics was performed to identify any differences between the two, such as improved fabrication parameters or increased mechanical properties. Two areas of thermal processing were examined: (1) sintered silicon nitride (SSN) and (2) sintered reaction-bonded silicon nitride (SRBSN). The SSN powder compacts showed improved densification and enhanced grain growth. SRBSN materials were fabricated in the microwave with a one-step process using cost-effective raw materials. The SRBSN materials had properties appropriate for structural applications. Observed increases in fracture toughness for the microwave processed SRBSN materials were attributable to enhanced elongated grain growth.

  13. Comparison of properties of sintered and sintered reaction-bonded silicon nitride fabricated by microwave and conventional heating

    SciTech Connect

    Tiegs, T.N.; Kiggans, J.O. Jr.; Lin, H.T.

    1995-10-01

    A comparison of microwave and conventional processing of silicon nitride-based ceramics was performed to identify any differences between the two, such as improved fabrication parameters or increased mechanical properties. Two areas of thermal processing were examined: sintered silicon nitride (SSN) and sintered reaction-bonded silicon nitride (SRBSN). The SSN powder compacts showed improved densification and enhanced grain growth. SRBSN materials were fabricated in the microwave with a one-step process using cost-effective raw materials. The SRBSN materials had properties appropriate for structural applications. Observed increases in fracture toughness for the microwave processed SRBSN materials were attributable to enhanced elongated grain growth.

  14. Tailoring the intergranular phases in silicon nitride for improved toughness

    SciTech Connect

    Sun, E.Y.; Becher, P.F.; Plucknett, K.P.; Waters, S.B.; Hirao, K.; Brito, M.E.

    1996-12-31

    Intergranular glass phases can have a significant influence on fracture resistance (R-curve behavior) of Si nitride ceramics and appears to be related to debonding of the {beta}-Si{sub 3}N{sub 4}/oxynitride-glass interfaces. Applying the results from {beta}- Si{sub 3}N{sub 4}-whisker/oxynitride-glass model systems, self- reinforced Si nitrides with different sintering additive ratios were investigated. Si nitrides sintered with a lower Al{sub 2}O{sub 3}: Y{sub 2}O{sub 3} additive ratio exhibited higher stead-state fracture toughness together with a steeply rising R-curve. Analytical electron microscopy suggested that the different fracture behavior is related to the Al content in the SiAlON growth band on the elongated grains, which could result in differences in interfacial bonding structures between the grains and the intergranular glass.

  15. Plasma-Enhanced Atomic Layer Deposition of Silicon Nitride Using a Novel Silylamine Precursor.

    PubMed

    Park, Jae-Min; Jang, Se Jin; Yusup, Luchana L; Lee, Won-Jun; Lee, Sang-Ick

    2016-08-17

    We report the plasma-enhanced atomic layer deposition (PEALD) of silicon nitride thin film using a silylamine compound as the silicon precursor. A series of silylamine compounds were designed by replacing SiH3 groups in trisilylamine by dimethylaminomethylsilyl or trimethylsilyl groups to obtain sufficient thermal stability. The silylamine compounds were synthesized through redistribution, amino-substitution, lithiation, and silylation reactions. Among them, bis(dimethylaminomethylsilyl)trimethylsilyl amine (C9H29N3Si3, DTDN2-H2) was selected as the silicon precursor because of the lowest bond dissociation energy and sufficient vapor pressures. The energies for adsorption and reaction of DTDN2-H2 with the silicon nitride surface were also calculated by density functional theory. PEALD silicon nitride thin films were prepared using DTDN2-H2 and N2 plasma. The PEALD process window was between 250 and 400 °C with a growth rate of 0.36 Å/cycle. The best film quality was obtained at 400 °C with a RF power of 100 W. The PEALD film prepared showed good bottom and sidewall coverages of ∼80% and ∼73%, respectively, on a trench-patterned wafer with an aspect ratio of 5.5.

  16. Crystallization behavior of three-dimensional silica fiber reinforced silicon nitride composite

    NASA Astrophysics Data System (ADS)

    Qi, Gongjin; Zhang, Changrui; Hu, Haifeng; Cao, Feng; Wang, Siqing; Jiang, Yonggang; Li, Bin

    2005-10-01

    The crystallization behavior of a new type of ceramic matrix composites, three-dimensional silica fiber reinforced silicon nitride matrix composite prepared by perhydropolysilazane infiltration and pyrolysis, was investigated by X-ray diffractometry and Fourier transform infrared spectroscopy. With the post-annealing treatment of the amorphous as-received composite at elevated tempertures of 1400 and 1600 °C in nitrogen atmosphere, there was remarkable suppression of the crystallization of polymer-derived silicon nitride ceramic matrix into α-Si 3N 4 and silica fibers into α-cristobalite, which was probably attributed to the phase of silicon oxynitrides originating from the strong fiber/matrix interfacial chemical reaction.

  17. Reaction layer characterization of the braze joint of silicon nitride to stainless steel

    NASA Astrophysics Data System (ADS)

    Xu, R.; Indacochea, J. E.

    1994-10-01

    This investigation studies the role of titanium in the development of the reaction layer in braze joining silicon nitride to stainless steel using titanium-active copper-silver filler metals. This reaction layer formed as a result of titanium diffusing to the filler metal/silicon nitride interface and reacting with the silicon nitride to form the intermetallics, titanium nitride (TiN) and titanium suicide (Ti 5Si3). This reaction layer, as recognized in the literature, allows wetting of the ceramic substrate by the molten filler metal. The reaction layer thickness increases with temperature and time. Its growth rate obeys the parabolic relationship. Activation energies of 220.1 and 210.9 kj/mol were calculated for growth of the reaction layer for the two filler metals used. These values are close to the activation energy of nitrogen in TiN (217.6 kj/mol). Two filler metals were used in this study, Ticusil (68.8 wt% Ag, 26.7 wt% Cu, 4.5 wt% Ti) and CB4 (70.5 wt% Ag, 26.5 wt% Cu, 3.0 wt% Ti). The joints were processed in vacuum at temperatures of 840 to 900 °C at various times. Bonding strength is affected by reaction layer thickness in the absence of Ti-Cu intermetallics in the filler metal matrix.

  18. Role of silicon excess in Er-doped silicon-rich nitride light emitting devices at 1.54 μm

    SciTech Connect

    Ramírez, J. M. Berencén, Y.; Garrido, B.; Cueff, S.; Labbé, C.

    2014-08-28

    Erbium-doped silicon-rich nitride electroluminescent thin-films emitting at 1.54 μm have been fabricated and integrated within a metal-oxide-semiconductor structure. By gradually varying the stoichiometry of the silicon nitride, we uncover the role of silicon excess on the optoelectronic properties of devices. While the electrical transport is mainly enabled in all cases by Poole-Frenkel conduction, power efficiency and conductivity are strongly altered by the silicon excess content. Specifically, the increase in silicon excess remarkably enhances the conductivity and decreases the charge trapping; however, it also reduces the power efficiency. The main excitation mechanism of Er{sup 3+} ions embedded in silicon-rich nitrides is discussed. The optimum Si excess that balances power efficiency, conductivity, and charge trapping density is found to be close to 16%.

  19. Growth, characterization, and properties of carbon nitride with and without silicon addition

    SciTech Connect

    Chen, L.C.; Wu, C.T.; Wu, J.J.; Chen, K.H.

    2000-01-30

    Carbon nitride and silicon carbon nitride have been grown by microwave plasma chemical vapor deposition, electron-cyclotron-resonance plasma chemical vapor deposition, magnetron sputtering and ion beam sputtering. Depending on the specific process details, a wide range of microstructure and morphologies has been demonstrated. Effects of Si addition to CN network on the structure of the deposited materials were studied. While Si involvement in CVD process was crucial for crystal growth, excessive Si incorporation led to formation of amorphous phase in PVD process. Various optical constants including the band gap and refractive index of the SiCN phases are also reported.

  20. Near-infrared gallium nitride two-dimensional photonic crystal platform on silicon

    NASA Astrophysics Data System (ADS)

    Roland, I.; Zeng, Y.; Han, Z.; Checoury, X.; Blin, C.; El Kurdi, M.; Ghrib, A.; Sauvage, S.; Gayral, B.; Brimont, C.; Guillet, T.; Semond, F.; Boucaud, P.

    2014-07-01

    We demonstrate a two-dimensional free-standing gallium nitride photonic crystal platform operating around 1550 nm and fabricated on a silicon substrate. Width-modulated waveguide cavities are integrated and exhibit loaded quality factors up to 34 000 at 1575 nm. We show the resonance tunability by varying the ratio of air hole radius to periodicity, and cavity hole displacement. We deduce a ˜7.9 dB/cm linear absorption loss for the suspended nitride structure from the power dependence of the cavity in-plane transmission.

  1. Near-infrared gallium nitride two-dimensional photonic crystal platform on silicon

    SciTech Connect

    Roland, I.; Zeng, Y.; Han, Z.; Checoury, X.; Blin, C.; El Kurdi, M.; Ghrib, A.; Sauvage, S.; Boucaud, P.; Gayral, B.; Brimont, C.; Guillet, T.; Semond, F.

    2014-07-07

    We demonstrate a two-dimensional free-standing gallium nitride photonic crystal platform operating around 1550 nm and fabricated on a silicon substrate. Width-modulated waveguide cavities are integrated and exhibit loaded quality factors up to 34 000 at 1575 nm. We show the resonance tunability by varying the ratio of air hole radius to periodicity, and cavity hole displacement. We deduce a ∼7.9 dB/cm linear absorption loss for the suspended nitride structure from the power dependence of the cavity in-plane transmission.

  2. Phonon characteristics and photoluminescence of bamboo structured silicon-doped boron nitride multiwall nanotubes

    NASA Astrophysics Data System (ADS)

    Xu, Shifeng; Fan, Yi; Luo, Jingsong; Zhang, Ligong; Wang, Wenquan; Yao, Bin; An, Linan

    2007-01-01

    Bamboo structured silicon-doped boron nitride multiwall nanotubes are synthesized via catalyst-assisted pyrolysis of a boron-containing polymeric precursor. The nanotubes are characterized using transmission electron microscopy, x-ray diffraction, Raman, and Fourier-transformed infrared spectroscope. The results suggest that the Si dopants cause significant changes in the structure and phonon characteristics of the nanotubes as compared to pure boron nitride nanotubes. A broad photoluminescence band ranging between 500 and 800nm is observed from the nanotubes, which is attributed to Si dopants. Study on temperature dependence of emission intensity suggests that the thermal activation energy of the nonradiative recombination process is 35meV.

  3. Foreign Object Damage Behavior of Two Gas-turbine Grade Silicon Nitrides by Steel Ball Projectiles at Ambient Temperature

    NASA Technical Reports Server (NTRS)

    Choi, Sung R.; Pereira, J. Michael; Janosik, Lesley A.; Bhatt, Ramakrishna T.

    2002-01-01

    Foreign object damage (FOD) behavior of two commercial gas-turbine grade silicon nitrides, AS800 and SN282, was determined at ambient temperature through strength testing of flexure test specimens impacted by steel-ball projectiles with a diameter of 1.59 mm in a velocity range from 220 to 440 m/s. AS800 silicon nitride exhibited a greater FOD resistance than SN282, primarily due to its greater value of fracture toughness (K(sub IC)). Additionally, the FOD response of an equiaxed, fine-grained silicon nitride (NC132) was also investigated to provide further insight. The NC132 silicon nitride exhibited the lowest fracture toughness of the three materials tested, providing further evidence that K(sub IC) is a key material parameter affecting FOD resistance. The observed damage generated by projectile impact was typically in the forms of well- or ill-developed ring or cone cracks with little presence of radial cracks.

  4. Rolling-element fatigue life of silicon nitride balls. [as compared to that of steel, ceramic, and cermet materials

    NASA Technical Reports Server (NTRS)

    Parker, R. J.; Zaretsky, E. V.

    1974-01-01

    The five-ball fatigue tester was used to evaluate silicon nitride as a rolling-element bearing material. Results indicate that hot-pressed silicon nitride running against steel may be expected to yield fatigue lives comparable to or greater than those of bearing quality steel running against steel at stress levels typical rolling-element bearing application. The fatigue life of hot-pressed silicon nitride is considerably greater than that of any ceramic or cermet tested. Computer analysis indicates that there is no improvement in the lives of 120-mm-bore angular--contact ball bearings of the same geometry operating at DN values from 2 to 4 million where hot-pressed silicon nitride balls are used in place of steel balls.

  5. Chemical bulk properties of multicrystalline silicon ingots for solar cells cast in silicon nitride crucibles

    NASA Astrophysics Data System (ADS)

    Modanese, C.; Di Sabatino, M.; Syvertsen, M.; Arnberg, L.

    2012-09-01

    Silicon nitride is an alternative material to the widely used silica crucibles for directional solidification of mc-Si ingots, its main advantages being the reusability in successive castings and elimination for a source for oxygen contamination of the ingot. In this work, several ingots were cast in these crucibles and compared to reference ingots cast in silica crucibles. The thermal properties of the Si3N4 crucible differ from those of the SiO2 crucible and lead to a different thermal history during melting and casting. The oxygen contamination of the ingot was observed to depend mainly on the melting and holding temperature, rather than on the crucible material. The lowest oxygen concentration was observed in the ingots with the lowest melting temperature. However, the thermal properties of the Si3N4 crucible influence the oxygen profile along ingot height, with a faster decrease in the concentration with increasing ingot height. This is believed to be due to a different mechanism for oxygen transport compared to that of the silica crucibles. The concentration of dopants in the ingots showed that contamination from the Si3N4 crucible occurred, probably due to diffusion of B- and P-oxides into the Si melt.

  6. Substitution of ceramics for high temperature alloys. [advantages of using silicon carbides and silicon nitrides in gas turbine engines

    NASA Technical Reports Server (NTRS)

    Probst, H. B.

    1978-01-01

    The high temperature capability of ceramics such as silicon nitride and silicon carbide can result in turbine engines of improved efficiency. Other advantages when compared to the nickel and cobalt alloys in current use are raw material availability, lower weight, erosion/corrosion resistance, and potentially lower cost. The use of ceramics in three different sizes of gas turbine is considered; these are the large utility turbines, advanced aircraft turbines, and small automotive turbines. Special consideration, unique to each of these applications, arise when one considers substituting ceramics for high temperature alloys. The effects of material substitutions are reviewed in terms of engine performance, operating economy, and secondary effects.

  7. Hot-wire chemical vapor deposition of silicon and silicon nitride for photovoltaics: Experiments, simulations, and applications

    NASA Astrophysics Data System (ADS)

    Holt, Jason Knowles

    Hot-wire chemical vapor deposition is a promising technique for deposition of thin film silicon for photovoltaics. Fundamental questions remain, however, about the gas-phase and surface-kinetic processes involved. To this end, the nature of the decomposition process has been studied in detail by use of mass spectrometry. Catalysis was evident for SiH3 production with the use of a new wire, while aged wires appear to produce radicals by a non-catalyzed route. Large quantities of silicon were present at the surface, consistent with a silicide layer. Threshold ionization mass spectrometry revealed large quantities of the SiH2 radical, attributed to heterogeneous pyrolysis on the walls of the reactor. At dilute (1% in He) silane pressures of up to 2 Torr, a negligible amount of ions and silicon agglomerates (Si2, Si2H, Si 2H6) were detected. Density functional theory calculations reveal an energetically favorable route for the reaction of Si and SiH 4, producing Si2H2 and H2. Two-dimensional Monte Carlo simulations were used to model a hot-wire reactor, showing that filament arrays can be used to improve film growth uniformity. Continuum simulations predict a maximum growth rate of 10 nm/s for dilute (1%) silane conditions and a rate of 50 nm/s for pure silane. Hot-wire chemical vapor deposition was used to deposit silicon nitride films with indices of refraction from 1.8--2.5 and hydrogen content from 9--18 atomic %. By tuning the SiH4/NH3 flow ratio, films in which the hydrogen was predominantly bound to N or Si could be produced. Platinum-diffused silicon samples, capped by a hydrogenated silicon nitride layer revealed, upon annealing at 700°C, platinum-hydrogen complexes with a bulk concentration of 1014 cm-3. Photovoltaic cells employing a hot-wire nitride layer were found to have comparable electrical properties to those using plasma nitride layers. Finally, a method for in situ generation of SiH 4 by atomic hydrogen etching was evaluated. Using a cooled

  8. Effect of total pressure on the formation and size evolution of silicon quantum dots in silicon nitride films

    SciTech Connect

    Rezgui, B.; Sibai, A.; Nychyporuk, T.; Lemiti, M.; Bremond, G.; Maestre, D.; Palais, O.

    2010-05-03

    The size of silicon quantum dots (Si QDs) embedded in silicon nitride (SiN{sub x}) has been controlled by varying the total pressure in the plasma-enhanced chemical vapor deposition (PECVD) reactor. This is evidenced by transmission electron microscopy and results in a shift in the light emission peak of the quantum dots. We show that the luminescence in our structures is attributed to the quantum confinement effect. These findings give a strong indication that the quality (density and size distribution) of Si QDs can be improved by optimizing the deposition parameters which opens a route to the fabrication of an all-Si tandem solar cell.

  9. Preparation and evaluation of silicon nitride matrices for silicon nitride-SiC fiber composites. M.S. Thesis Final Technical Report

    NASA Technical Reports Server (NTRS)

    Axelson, Scott R.

    1988-01-01

    Continuous silicon carbide (SiC) fiber was added to three types of silicon nitride (Si3N4) matrices. Efforts were aimed at producing a dense Si3N4 matrix from reaction-bonded silicon nitride (RBSN) by hot-isostatic-pressing (HIP) and pressureless sintering, and from Si3N4 powder by hot-pressing. The sintering additives utilized were chosen to allow for densification, while not causing severe degradation of the fiber. The ceramic microstructures were evaluated using scanning optical microscopy. Vickers indentation was used to determine the microhardness and fracture toughness values of the matrices. The RBSN matrices in this study did not reach more than 80 percent of theoretical density after sintering at various temperatures, pressures, and additive levels. Hot-pressing Si3N4 powder produced the highest density matrices; hardness and toughness values were within an order of magnitude of the best literature values. The best sintering aid composition chosen included Y2O3, SiO2, and Al2O3 or AlN. Photomicrographs demonstrate a significant reduction of fiber attack by this additive composition.

  10. A study of vapor-phase deposition of silicon nitride layers by ammonolysis of dichlorosilane at lowered pressure

    SciTech Connect

    Manzha, N. M.

    2010-12-15

    Deposition kinetics of silicon nitride layers at lowered reactor pressures of 10-130 Pa and temperatures in the range 973-1073 K has been studied. The equilibrium constant of the bimolecular reaction of dichlorosilane with ammonia has been calculated. The apparent activation energies calculated taking into account the experimental growth rate nearly coincide with the experimental data. Recommendations for improving the quality of silicon nitride layers are made.

  11. Subtask 6.6 - SiAION Coatings for Alkali-Resistant Silicon Nitride. Topical report

    SciTech Connect

    1997-02-25

    The efficiency of a gas turbine can be improved by increasing operating temperature. Construction materials should both meet high strength requirements and exhibit hot alkali corrosion resistance. Structural ceramics based on silicon nitride are promising candidates for high temperature engineering applications because of their high strength and good resistance to corrosion. Their performance varies significantly with the mechanical properties of boundary phases which, in turn, depend on their chemical composition, thickness of the amorphous phase, and the deformation process. To make silicon nitride ceramics tough, SiAlON ceramics were developed with controlled crystallization of the amorphous grain boundary phase. Crystallization of the grain boundary glass improves the high temperature mechanical properties of silicon nitride ceramics. Thus, the knowledge of silicon oxynitride ceramics corrosion behavior in Na{sub 2}SO{sub 4} becomes important for engineers in designing appropriate part for turbines working at high temperatures. So far there has been no report concerning alkali attack on SiAlON ceramics in the presence of SO{sub 2} and chlorine in flue gas. The goal of this project was to investigate alkali corrosion of SiAlON-Y structural ceramics under combustion conditions in the presence of sodium derived components.

  12. CMOS-compatible silicon nitride spectrometers for lab-on-a-chip spectral sensing

    NASA Astrophysics Data System (ADS)

    Ryckeboer, Eva; Nie, Xiaomin; Subramanian, Ananth Z.; Martens, Daan; Bienstman, Peter; Clemmen, Stephane; Severi, Simone; Jansen, Roelof; Roelkens, Gunther; Baets, Roel

    2016-05-01

    We report on miniaturized optical spectrometers integrated on a photonic integrated circuit (PIC) platform based on silicon nitride waveguides and fabricated in a CMOS-compatible approach. As compared to a silicon- on-insulator PIC-platform, the usage of silicon nitride allows for operation in the visible and near infrared. Furthermore, the moderately high refractive index contrast in silicon-nitride photonic wire waveguides provides a valuable compromise between compactness, optical loss and sensitivity to phase error. Three generic types of on-chip spectrometers are discussed: the arrayed waveguide grating (AWG) spectrometer, the echelle grating or planar concave grating (PCG) spectrometer and the stationary Fourier transform spectrometer (FTS) spectrometer. Both the design as well as experimental results are presented and discussed. For the FTS spectrometer a specific design is described in detail leading to an ultra-small (0.1 mm2) footprint device with a resolution of 1 nm and a spectral range of 100nm. Examples are given of the usage of these spectrometers in refractive index biosensing, absorption spectroscopy and Raman spectroscopy.

  13. Microstructure, toughness and flexural strength of self-reinforced silicon nitride ceramics doped with yttrium oxide and ytterbium oxide.

    PubMed

    Zheng, Y. S.; Knowles, K. M.; Vieira, J. M.; Lopes, A. B.; Oliveira, F. J.

    2001-02-01

    Self-reinforced silicon nitride ceramics with additions of either yttrium oxide or ytterbium oxide have been investigated at room temperature after various processing heat treatments. Devitrification of the intergranular phase in these materials is very sensitive to the heat treatment used during processing and does not necessarily improve their strength and toughness. Hot-pressed ceramics without a subsequent devitrification heat treatment were the strongest. The ytterbium oxide-doped silicon nitride ceramics were consistently tougher, but less strong, than the yttrium oxide-doped silicon nitride ceramics. In all the ceramics examined, the fracture toughness showed evidence for R-curve behaviour. This was most significant in pressureless sintered ytterbium oxide-doped silicon nitride ceramics. A number of toughening mechanisms, including crack deflection, bridging, and fibre-like grain pull-out, were observed during microstructural analysis of the ceramics. In common with other silicon nitride-based ceramics, thin amorphous films were found at the grain boundaries in each of the ceramics examined. Arrays of dislocations left in the elongated silicon nitride grains after processing were found to belong to the {101;0}<0001> primary slip system.

  14. Electron trap level of hydrogen incorporated nitrogen vacancies in silicon nitride

    SciTech Connect

    Sonoda, Ken'ichiro Tsukuda, Eiji; Tanizawa, Motoaki; Yamaguchi, Yasuo

    2015-03-14

    Hydrogen incorporation into nitrogen vacancies in silicon nitride and its effects on electron trap level are analyzed using simulation based on density functional theory with temperature- and pressure-dependent hydrogen chemical potential. If the silicon dangling bonds around a nitrogen vacancy are well separated each other, hydrogen incorporation is energetically stable up to 900 °C, which is in agreement with the experimentally observed desorption temperature. On the other hand, if the dangling bonds strongly interact, the incorporation is energetically unfavorable even at room temperature because of steric hindrance. An electron trap level caused by a nitrogen vacancy becomes shallow by the hydrogen incorporation. An electron is trapped in a deep level created by a silicon dangling bond before hydrogen incorporation, whereas it is trapped in a shallow level created by an anti-bonding state of a silicon-silicon bond after hydrogen incorporation. The simulation results qualitatively explain the experiment, in which reduced hydrogen content in silicon nitride shows superior charge retention characteristics.

  15. Structure analysis of aluminium silicon manganese nitride precipitates formed in grain-oriented electrical steels

    SciTech Connect

    Bernier, Nicolas; Xhoffer, Chris; Van De Putte, Tom; Galceran, Montserrat; Godet, Stéphane

    2013-12-15

    We report a detailed structural and chemical characterisation of aluminium silicon manganese nitrides that act as grain growth inhibitors in industrially processed grain-oriented (GO) electrical steels. The compounds are characterised using energy dispersive X-ray spectrometry (EDX) and energy filtered transmission electron microscopy (EFTEM), while their crystal structures are analysed using X-ray diffraction (XRD) and TEM in electron diffraction (ED), dark-field, high-resolution and automated crystallographic orientation mapping (ACOM) modes. The chemical bonding character is determined using electron energy loss spectroscopy (EELS). Despite the wide variation in composition, all the precipitates exhibit a hexagonal close-packed (h.c.p.) crystal structure and lattice parameters of aluminium nitride. The EDX measurement of ∼ 900 stoichiometrically different precipitates indicates intermediate structures between pure aluminium nitride and pure silicon manganese nitride, with a constant Si/Mn atomic ratio of ∼ 4. It is demonstrated that aluminium and silicon are interchangeably precipitated with the same local arrangement, while both Mn{sup 2+} and Mn{sup 3+} are incorporated in the h.c.p. silicon nitride interstitial sites. The oxidation of the silicon manganese nitrides most likely originates from the incorporation of oxygen during the decarburisation annealing process, thus creating extended planar defects such as stacking faults and inversion domain boundaries. The chemical composition of the inhibitors may be written as (AlN){sub x}(SiMn{sub 0.25}N{sub y}O{sub z}){sub 1−x} with x ranging from 0 to 1. - Highlights: • We study the structure of (Al,Si,Mn)N inhibitors in grain oriented electrical steels. • Inhibitors have the hexagonal close-packed symmetry with lattice parameters of AlN. • Inhibitors are intermediate structures between pure AlN and (Si,Mn)N with Si/Mn ∼ 4. • Al and Si share the same local arrangement; Mn is incorporated in both Mn

  16. Surface toughness of silicon nitride bioceramics: I, Raman spectroscopy-assisted micromechanics.

    PubMed

    Pezzotti, Giuseppe; Enomoto, Yuto; Zhu, Wenliang; Boffelli, Marco; Marin, Elia; McEntire, Bryan J

    2016-02-01

    Indentation micro-fracture is revisited as a tool for evaluating the surface toughness of silicon nitride (Si3N4) bioceramics for artificial joint applications. Despite being unique and practical from an experimental perspective, a quantitative assessment of surface fracture toughness using this method is challenging. An improved method has been developed, consisting of coupling indentation with confocal (spatially resolved) Raman piezo-spectroscopy. Empowered by the Raman microprobe, the indentation micro-fracture method was found to be capable of providing reliable surface toughness measurements in silicon nitride biomaterials. In designing the microstructures of bioceramic bearing couples for improved tribological performance, surface toughness must be considered as a fundamentally different and distinct parameter from bulk toughness. The coupling of indention crack opening displacements (COD) with local stress field assessments by spectroscopy paves the way to reliably compare the structural properties of bioceramics and to quantitatively monitor their evolution during environmental exposure.

  17. An evaluation of bearings operating in a cryogenic environment with silicon nitride rolling elements

    NASA Technical Reports Server (NTRS)

    Gibson, H. G.

    1991-01-01

    The bearings used in the space shuttle main engine (SSME) high pressure oxidizer turbopump (HPOTP) do not meet the expected life goals that were set for them. In an effort to improve their performance, many solutions are being studied. New bearing materials are being developed, better manufacturing techniques are being investigated, and improved cage materials for better lubrication are being tested. The focus is on the replacement of steel balls with ones made of silicon nitride in 57-mm HPOTP bearings. The bearings were then installed in a test rig and run at near turbopump operating conditions. The results from this test series are encouraging, with silicon nitride showing good wear resistance and thermal stability.

  18. Differences in creep performance of a HIPed silicon nitride in ambient air and inert environments

    SciTech Connect

    Wereszczak, A.A.; Kirkland, T.P.; Ferber, M.K.

    1995-04-01

    High temperature tensile creep studies of a commercially available hot isostatically pressed (HIPed) silicon nitride were conducted in ambient air and argon environments. The creep performance of this HIPed silicon nitride was found to be different in these environments. The material crept faster (and had a consequential shorter lifetime) in argon than in ambient air at 1370{degrees}C at tensile stresses between 110-140 MPa. The stress dependence of the minimum creep rate was found to be {approx} 6 in argon and {approx} 3.5 in air, while the minimum creep rates were almost an order of magnitude faster in argon than in air at equivalent tensile stresses. Differences in the creep performance are explained with reference to the presence or absence of oxygen in the two environments.

  19. Crack healing behavior of hot pressed silicon nitride due to oxidation

    NASA Technical Reports Server (NTRS)

    Choi, S. R.; Tikare, V.

    1992-01-01

    It is shown that limited oxidation of an MgO-containing, hot-pressed silicon nitride ceramic at 800 deg C and above results in increased strength due to crack healing. Slight oxidation of the surface produces enstatite and cristobalite which fills in cracks. More extensive oxidation leads to strength degradation due to the formation of new flaws by the evolution of N2 gas at the surface. The apparent fracture toughness also increased at 800 deg C and above due to oxidation. Bonds formed between the two surfaces of the crack during oxidation leads to a reduction in stress intensity at the crack tip, suggesting that valid high-temperature toughness values cannot be obtained in an air environment. The increase in strength due to crack healing by oxidation can be achieved without compromising the fatigue properties of the silicon nitride ceramic.

  20. Microstructural and physical properties of magnesium oxide-doped silicon nitride ceramics

    NASA Astrophysics Data System (ADS)

    Sirota, V.; Lukianova, O.; Krasilnikov, V.; Selemenev, V.; Dokalov, V.

    Silicon nitride based ceramics with aluminum, yttrium and magnesium oxides were produced by cold isostatic pressing and free sintering. The phase composition of the starting MgO powder obtained by the novel technology has been studied. The effect of magnesium oxide content on the structure of the produced materials has been investigated. It was found, that obtained materials with 1 and 2 wt.% of magnesium oxide and without it have a typical β-silicon nitride structure with elongated grains. Ceramics with 5 wt.% magnesia has a duplex α/β-structure with elongated and equiaxed grains. Ceramics with 2 wt.% magnesium oxide has a maximum density of 2.91 g/cm3. The increases in magnesium oxide content upto 5% led to decrease in the shrinkage (from 16% to 12%) and density (from 2.88 to 2.37 g/cm3).

  1. Experimental study of thermodynamic surface characteristics and pH sensitivity of silicon dioxide and silicon nitride.

    PubMed

    Barhoumi, H; Maaref, A; Jaffrezic-Renault, N

    2010-05-18

    In this report, we have introduced a revision of the chemical treatment influence on the surface thermodynamic properties of silicon dioxide (SiO(2)) and silicon nitride (Si(3)N(4)) solid thin layers. Some characterization techniques might be used to quantify the thermodynamic properties of solid surface and predict its ability in the adhesion phenomenon. In this work, we have used static and dynamic contact angle (CA) measurements to characterize both dioxide solid surfaces being treated by using the two procedures of cleaning and chemical activation. Qualitative and quantitative concepts of analysis, using the Van Oss approach, are based on the determination of dioxide surface hydrophilic and hydrophobic features and the thermodynamic parameters such as free energy, acid, base, and Lewis acid-base surface tension components. Electrochemical capacitance-potential measurements were carried out to study the reactivity of both silicon dioxide and silicon nitride surfaces for pH variation. Furthermore, the surface roughness of these insulators was examined by using the contact angle hysteresis (CAH) measurements and atomic force microscopy (AFM). It was concluded that CA technique can be used as a suitable and base method for the understanding of surface wettability and for the control of surface wetting behavior.

  2. Nitridation of silicon. M.S. Thesis Case Western Reserve Univ.

    NASA Technical Reports Server (NTRS)

    Shaw, N. J.

    1981-01-01

    Silicon powders with three levels of impurities, principally Fe, were sintered in He or H2. Non-densifying mechanisms of material transport were dominant in all cases. High purity Si showed coarsening in He while particle growth was suppressed in H2. Lower purity powder coarsened in both He and H2. The same three Si powders and Si /111/ single crystal wafers were nitrided in both N2 and N2/H2 atmospheres. Hydrogen increased the degree of nitridation of all three powders and the alpha/beta ratio of the lower purity powder. Some Si3N4 whiskers and open channels through the surface nitride layer were observed in the presence of Fe, correlating with the nitridation-enhancing effects of Fe. Thermodynamic calculations showed that when SiO2 is present on the Si, addition of H2 to the nitriding atmosphere decreases the amount of SiO2 and increases the partial pressure of Si-containing vapor species, that is, Si and SiO. Large amounts of NH3 and SiH4 were also predicted to form.

  3. Elevated Temperature Slow Crack Growth of Silicon Nitride Under Dynamic, Static and Cyclic Flexural Loading

    NASA Technical Reports Server (NTRS)

    Choi, Sung R.; Salem, Jonathan A.; Nemeth, Noel; Gyekenyesi, John P.

    1994-01-01

    The slow crack growth parameters of a hot-pressed silicon nitride were determined at 1200 and 1300 C in air by statically, dynamically and cyclicly loading bend specimens. The fatigue parameters were estimated using the recently developed CARES/Life computer code. Good agreement exists between the flexural results. However, fatigue susceptibility under static uniaxial tensile loading, reported elsewhere, was greater than in flexure. Cyclic flexural loading resulted in the lowest apparent flexural fatigue susceptibility.

  4. Mechanical behavior and failure phenomenon of an in situ-toughened silicon nitride

    NASA Technical Reports Server (NTRS)

    Salem, Jonathan A.; Choi, Sung R.; Freedman, Marc R.; Jenkins, Michael G.

    1990-01-01

    The Weibull modulus, fracture toughness and crack growth resistance of an in-situ toughened, silicon nitride material used to manufacture a turbine combustor were determined from room temperature to 1371 C. The material exhibited an elongated grain structure that resulted in improved fracture toughness, nonlinear crack growth resistance, and good elevated temperature strength. However, low temperature strength was limited by grains of excessive length (30 to 100 microns). These excessively long grains were surrounded by regions rich in sintering additives.

  5. On-Chip Integrated Quantum-Dot-Silicon-Nitride Microdisk Lasers.

    PubMed

    Xie, Weiqiang; Stöferle, Thilo; Rainò, Gabriele; Aubert, Tangi; Bisschop, Suzanne; Zhu, Yunpeng; Mahrt, Rainer F; Geiregat, Pieter; Brainis, Edouard; Hens, Zeger; Van Thourhout, Dries

    2017-02-15

    Hybrid silicon nitride (SiN)-quantum-dot (QD) microlasers coupled to a passive SiN output waveguide with a 7 µm diameter and a record-low threshold density of 27 µJ cm(-2) are demonstrated. A new design and processing scheme offers long-term stability and facilitates in-depth QD material and device characterization, thereby opening new paths for optical communication, sensing, and on-chip cavity quantum optics based on colloidal QDs.

  6. Influence of Strain on Thermal Conductivity of Silicon Nitride Thin Films

    DTIC Science & Technology

    2012-03-02

    silicon nitride process for surface-micromachining applications Sensors Actuators A 58 149–57 [42] Poetzsch R H and Bottger H 1994 Interplay of disorder...NUMBER 5c. PROGRAM ELEMENT NUMBER 6. AUTHOR(S) 5d. PROJECT NUMBER 5e. TASK NUMBER 5f. WORK UNIT NUMBER 7. PERFORMING ORGANIZATION NAME(S) AND...ADDRESS(ES) Air Force Research Laboratory,Thermal Sciences and Materials Branch,Wright-Patterson Air Force Base,OH,45433 8. PERFORMING ORGANIZATION REPORT

  7. Dispersion engineering of thick high-Q silicon nitride ring-resonators via atomic layer deposition.

    PubMed

    Riemensberger, Johann; Hartinger, Klaus; Herr, Tobias; Brasch, Victor; Holzwarth, Ronald; Kippenberg, Tobias J

    2012-12-03

    We demonstrate dispersion engineering of integrated silicon nitride based ring resonators through conformal coating with hafnium dioxide deposited on top of the structures via atomic layer deposition. Both, magnitude and bandwidth of anomalous dispersion can be significantly increased. The results are confirmed by high resolution frequency-comb-assisted-diode-laser spectroscopy and are in very good agreement with the simulated modification of the mode spectrum.

  8. An evaluation of indentation and finishing properties of bearing grade silicon nitrides

    SciTech Connect

    Dill, J.F.; Gardos, M.N.; Hardisty, R.G.

    1997-01-01

    This paper describes the results of studies of the machining performance and the indentation hardness and fracture toughness of different silicon nitride materials as part of an effort to better define the optimum machining conditions for bearing components. This work builds on prior efforts by two of the authors, Gardos and Hardisty (1993) who formulated a simple relationship between diamond grinding performance of silicon nitride bearing balls and a wear equation first detailed by Evans and Wilshaw (1976). The goal of this present work was to determine the general applicability of such a relationship, i.e., could simple indentation studies be used to define finishing conditions for different silicon nitride materials? The availability of such a simple test would reduce the time required for developing an acceptable process when a supplier changes his formulation, or when a new material becomes available. Quicker development of optimum finishing conditions would eventually result in a lower-cost product for users. The initial study by Gardos and Hardisty (1993) was based on limited data taken at a fixed set of conditions. This study expanded the range of conditions evaluated and the number of ceramic materials studied in an effort to define the universality of the relationship between grinding wear, hardness, and toughness. This study has shown that no simple relationship like that first envisioned by the authors exists. The results showed that the grinding wear of the individual silicon nitride materials increased at different rates as a function of load. Because of the differences found in the load dependence of grinding rates, no simple relationship between hardness, fracture toughness, and grinding rate could be found that fit the data over the range of conditions studied.

  9. Structural Analysis of a Magnetically Actuated Silicon Nitride Micro-Shutter for Space Applications

    NASA Technical Reports Server (NTRS)

    Loughlin, James P.; Fettig, Rainer K.; Moseley, S. Harvey; Kutyrev, Alexander S.; Mott, D. Brent; Obenschain, Arthur F. (Technical Monitor)

    2002-01-01

    Finite element models have been created to simulate the electrostatic and electromagnetic actuation of a 0.5 micrometers silicon nitride micro-shutter for use in a spacebased Multi-object Spectrometer (MOS). The microshutter uses a torsion hinge to go from the closed, 0 degree, position, to the open, 90 degree position. Stresses in the torsion hinge are determined with a large deformation nonlinear finite element model. The simulation results are compared to experimental measurements of fabricated micro-shutter devices.

  10. The Effects of Thermal Cycling on Gallium Nitride and Silicon Carbide Semiconductor Devices for Aerospace Use

    NASA Technical Reports Server (NTRS)

    Patterson, Richard L.; Hammoud, Ahmad

    2012-01-01

    Electronics designed for use in NASA space missions are required to work efficiently and reliably under harsh environment conditions. These Include radiation, extreme temperatures, thermal cycling, to name a few. Preliminary data obtained on new Gallium Nitride and Silicon Carbide power devices under exposure to radiation followed by long term thermal cycling are presented. This work was done in collaboration with GSFC and JPL in support of the NASA Electronic Parts and Packaging (NEPP) Program

  11. Silicon nitride: A ceramic material with outstanding resistance to thermal shock and corrosion

    NASA Technical Reports Server (NTRS)

    Huebner, K. H.; Saure, F.

    1983-01-01

    The known physical, mechanical and chemical properties of reaction-sintered silicon nitride are summarized. This material deserves interest especially because of its unusually good resistance to thermal shock and corrosion at high temperatures. Two types are distinguished: reaction-sintered (porous) and hot-pressed (dense) Si3N4. Only the reaction-sintered material which is being produced today in large scale as crucibles, pipes, nozzles and tiles is considered.

  12. Crystallization of the glassy phase of grain boundaries in silicon nitride

    NASA Technical Reports Server (NTRS)

    Jefferson, D. A.; Thomas, J. M.; Wen, S.

    1984-01-01

    Three types of hot-pressed silicon nitride specimens (containing 5wt% Y2O3 and 2wt% Al2O3 additives) which were subjected to different temperature heat treatments were studied by X-ray diffraction, X-ray microanalysis and high resolution electron microscopy. The results indicated that there were phase changes in the grain boundaries after heat treatment and the glassy phase at the grain boundaries was crystallized by heat treatment.

  13. Correlated photon pair generation in low-loss double-stripe silicon nitride waveguides

    NASA Astrophysics Data System (ADS)

    Zhang, Xiang; Zhang, Yanbing; Xiong, Chunle; Eggleton, Benjamin J.

    2016-07-01

    We demonstrate correlated photon pair generation via spontaneous four-wave mixing in a low-loss double-stripe silicon nitride waveguide with a coincidence-to-accidental ratio over 10. The coincidence-to-accidental ratio is limited by spontaneous Raman scattering, which can be mitigated by cooling in the future. This demonstration suggests that this waveguide structure is a potential platform to develop integrated quantum photonic chips for quantum information processing.

  14. Thermal Shock Behavior of Silicon Nitride Flexure Beam Specimens with Indentation Cracks

    NASA Technical Reports Server (NTRS)

    Choi, Sung R.; Salem, Jonathan A.

    1994-01-01

    The experimental results of thermal shock testing of silicon nitride flexure beam specimens containing indentation cracks are presented. The thermal stress induced by water quenching is much greater in the transverse direction than in the longitudinal direction, resulting in an insensitivity of residual bend strength to temperature differences up to 580 C. This result indicates that a flexure beam configuration is not an appropriate geometry for thermal shock testing when thermal shock behavior is to be evaluated from residual bend strength data.

  15. Low-temperature deposition of crystalline silicon nitride nanoparticles by hot-wire chemical vapor deposition

    NASA Astrophysics Data System (ADS)

    Kim, Chan-Soo; Youn, Woong-Kyu; Lee, Dong-Kwon; Seol, Kwang-Soo; Hwang, Nong-Moon

    2009-07-01

    The nanocrystalline alpha silicon nitride (α-Si 3N 4) was deposited on a silicon substrate by hot-wire chemical vapor deposition at the substrate temperature of 700 °C under 4 and 40 Torr at the wire temperatures of 1430 and 1730 °C, with a gas mixture of SiH 4 and NH 3. The size and density of crystalline nanoparticles on the substrate increased with increasing wire temperature. With increasing reactor pressure, the crystallinity of α-Si 3N 4 nanoparticles increased, but the deposition rate decreased.

  16. Rf-plasma synthesis of nanosize silicon carbide and nitride. Final report

    SciTech Connect

    Buss, R.J.

    1997-02-01

    A pulsed rf plasma technique is capable of generating ceramic particles of 10 manometer dimension. Experiments using silane/ammonia and trimethylchlorosilane/hydrogen gas mixtures show that both silicon nitride and silicon carbide powders can be synthesized with control of the average particle diameter from 7 to 200 nm. Large size dispersion and much agglomeration appear characteristic of the method, in contrast to results reported by another research group. The as produced powders have a high hydrogen content and are air and moisture sensitive. Post-plasma treatment in a controlled atmosphere at elevated temperature (800{degrees}C) eliminates the hydrogen and stabilizes the powder with respect to oxidation or hydrolysis.

  17. Properties of silicon carbide fiber-reinforced silicon nitride matrix composites

    NASA Technical Reports Server (NTRS)

    Bhatt, Ramakrishna T.

    1988-01-01

    The mechanical properties of NASA Lewis developed SiC/RBSN composites and their thermal and environmental stability havd been studied. The composites consist of nearly 30 vol pct of aligned 142 micron diameter chemically vapor-deposited SiC fibers in a relatively porous silicon nitride matrix. In the as-fabricated condition, the unidirectional and 2-D composites exhibited metal-like stress-strain behavior, graceful failure, and showed improved properties when compared with unreinforced matrix of comparable density. Furthermore, the measured room temperature tensile properties were relativley independent of tested volume and were unaffected by artifical notches normal to the loading direction or by thermal shocking from temperatures up to 800 C. The four-point bend strength data measured as a function of temperature to 1400 C in air showed that as-fabricated strength was maintained to 1200 C. At 1400 C, however, nearly 15 pct loss in strength was observed. Measurement of room temperature tensile strength after 100 hr exposure at temperatures to 1400 C in a nitrogen environment indicated no loss from the as-fabricated composite strength. On the other hand, after 100 hr exposure in flowing oxygen at 1200 and 1400 C, the composites showed approximately 40 pct loss from their as-fabricated ultimate tensile strength. Those exposed between 400 to 1200 C showed nearly 60 pct strength loss. Oxidation of the fiber/matrix interface as well as internal oxidation of the porous Si3N4 matrix are likely mechanisms for strength degradation. The excellent strength reproducibility, notch insensitivity, and high temperature strength of the composite makes it an ideal candidate for advanced heat engine applications provided coating or densification methods are developed to avoid internal oxidation attack.

  18. Foreign Object Damage of Two Gas-Turbine Grade Silicon Nitrides in a Thin Disk Configuration

    NASA Technical Reports Server (NTRS)

    Choi, Sung R.; Pereira, J. Michael; Janosik, Lesley A.; Bhatt, Ramakrishna T.

    2003-01-01

    Foreign object damage (FOD) behavior of two commercial gas-turbine grade silicon nitrides, AS800 and SN282, was determined at ambient temperature through post-impact strength testing for thin disks impacted by steel-ball projectiles with a diameter of 1.59 mm in a velocity range from 115 to 440 m/s. AS800 silicon nitride exhibited a greater FOD resistance than SN282, primarily due to its greater value of fracture toughness (K(sub IC)). The critical impact velocity in which the corresponding post-impact strength yielded the lowest value was V(sub c) approx. 440 and 300 m/s for AS800 and SN282, respectively. A unique lower-strength regime was typified for both silicon nitrides depending on impact velocity, attributed to significant radial cracking. The damages generated by projectile impact were typically in the forms of ring, radial, and cone cracks with their severity and combination being dependent on impact velocity. Unlike thick (3 mm) flexure bar specimens used in the previous studies, thin (2 mm) disk target specimens exhibited a unique backside radial cracking occurring on the reverse side just beneath the impact sites at and above impact velocity of 160 and 220 m/s for SN282 and AS800, respectively.

  19. Development of a Lightweight Thrust Chamber Assembly Utilizing In-Situ Reinforced Silicon Nitride

    NASA Astrophysics Data System (ADS)

    Elvander, J.; Wherley, B.; Claflin, S.

    1999-06-01

    The paper describes the status of the Light Weight Thrust Chamber Assembly (LWTCA) program currently underway at Boeing Rocketdyne Propulsion and Power, under contract with the US Air Force Research Laboratory. The goal of the program is to demonstrate technology which will lead to a 40% reduction in weight (including the nozzle), a 50% reduction in cost, a 75% reduction in part count and a 3% increase in specific impulse on a full scale, 400 klbf thrust LOX/hydrogen booster engine. The demonstration will be performed through the use of manufacturing technology demonstrator hardware and 60 klbf thrust hot-fire tests. The primary means to achieving these goals is by using in-situ reinforced silicon nitride for structural components. Silicon nitride is an advanced ceramic material that has high specific strength and fracture toughness, and can be cast to near- net part shape. Tests to validate the material properties of in-situ reinforced silicon nitride are discussed, along with the resulting changes to traditional thrust chamber design as a result of the improved properties. The progress towards manufacturing and hot-fire testing a thrust chamber assembly from the material is also described.

  20. Quantitative Mapping of Pore Fraction Variations in Silicon Nitride Using an Ultrasonic Contact Scan Technique

    NASA Technical Reports Server (NTRS)

    Roth, Don J.; Kiser, James D.; Swickard, Suzanne M.; Szatmary, Steven A.; Kerwin, David P.

    1993-01-01

    An ultrasonic scan procedure using the pulse-echo contact configuration was employed to obtain maps of pore fraction variations in sintered silicon nitride samples in terms of ultrasonic material properties. Ultrasonic velocity, attenuation coefficient, and reflection coefficient images were obtained simultaneously over a broad band of frequencies (e.g., 30 to 110 MHz) by using spectroscopic analysis. Liquid and membrane (dry) coupling techniques and longitudinal and shear-wave energies were used. The major results include the following: Ultrasonic velocity (longitudinal and shear wave) images revealed and correlated with the extent of average through-thickness pore fraction variations in the silicon nitride disks. Attenuation coefficient images revealed pore fraction nonuniformity due to the scattering that occurred at boundaries between regions of high and low pore fraction. Velocity and attenuation coefficient images were each nearly identical for machined and polished disks, making the method readily applicable to machined materials. Velocity images were similar for wet and membrane coupling. Maps of apparent Poisson's ratio constructed from longitudinal and shear-wave velocities quantified Poisson's ratio variations across a silicon nitride disk. Thermal wave images of a disk indicated transient thermal behavior variations that correlated with observed variations in pore fraction and velocity and attenuation coefficients.

  1. Local environment of silicon in cubic boron nitride

    SciTech Connect

    Murata, Hidenobu Taniguchi, Takashi; Hishita, Shunichi; Yamamoto, Tomoyuki; Oba, Fumiyasu; Tanaka, Isao

    2013-12-21

    Si-doped cubic boron nitride (c-BN) is synthesized at high pressure and high temperature, and the local environment of Si is investigated using X-ray absorption near edge structure (XANES) and first-principles calculations. Si-K XANES indicates that Si in c-BN is surrounded by four nitrogen atoms. According to first-principles calculations, the model for substitutional Si at the B site well reproduces experimental Si-K XANES, and it is energetically more favorable than substitutional Si at the N site. Both the present experimental and theoretical results indicate that Si in c-BN prefers the B site to the N site.

  2. Influence of interlayer trapping and detrapping mechanisms on the electrical characterization of hafnium oxide/silicon nitride stacks on silicon

    SciTech Connect

    Garcia, H.; Duenas, S.; Castan, H.; Gomez, A.; Bailon, L.; Toledano-Luque, M.; Prado, A. del; Martil, I.; Gonzalez-Diaz, G.

    2008-11-01

    Al/HfO{sub 2}/SiN{sub x}:H/n-Si metal-insulator-semiconductor capacitors have been studied by electrical characterization. Films of silicon nitride were directly grown on n-type silicon substrates by electron cyclotron resonance assisted chemical vapor deposition. Silicon nitride thickness was varied from 3 to 6.6 nm. Afterwards, 12 nm thick hafnium oxide films were deposited by the high-pressure sputtering approach. Interface quality was determined by using current-voltage, capacitance-voltage, deep-level transient spectroscopy (DLTS), conductance transients, and flatband voltage transient techniques. Leakage currents followed the Poole-Frenkel emission model in all cases. According to the simultaneous measurement of the high and low frequency capacitance voltage curves, the interface trap density obtained for all the samples is in the 10{sup 11} cm{sup -2} eV{sup -1} range. However, a significant increase in this density of about two orders of magnitude was obtained by DLTS for the thinnest silicon nitride interfacial layers. In this work we probe that this increase is an artifact that must be attributed to traps existing at the HfO{sub 2}/SiN{sub x}:H intralayer interface. These traps are more easily charged or discharged as this interface comes near to the substrate, that is, as thinner the SiN{sub x}:H interface layer is. The trapping/detrapping mechanism increases the capacitance transient and, in consequence, the DLTS measurements have contributions not only from the insulator/substrate interface but also from the HfO{sub 2}/SiN{sub x}:H intralayer interface.

  3. Atomic oxygen effects on boron nitride and silicon nitride: A comparison of ground based and space flight data

    NASA Technical Reports Server (NTRS)

    Cross, J. B.; Lan, E. H.; Smith, C. A.; Whatley, W. J.

    1990-01-01

    The effects of atomic oxygen on boron nitride (BN) and silicon nitride (Si3N4) were evaluated in a low Earth orbit (LEO) flight experiment and in a ground based simulation facility. In both the inflight and ground based experiments, these materials were coated on thin (approx. 250A) silver films, and the electrical resistance of the silver was measured in situ to detect any penetration of atomic oxygen through the BN and Si3N4 materials. In the presence of atomic oxygen, silver oxidizes to form silver oxide, which has a much higher electrical resistance than pure silver. Permeation of atomic oxygen through BN, as indicated by an increase in the electrical resistance of the silver underneath, was observed in both the inflight and ground based experiments. In contrast, no permeation of atomic oxygen through Si3N4 was observed in either the inflight or ground based experiments. The ground based results show good qualitative correlation with the LEO flight results, indicating that ground based facilities such as the one at Los Alamos National Lab can reproduce space flight data from LEO.

  4. A comparison of ground-based and space flight data: Atomic oxygen reactions with boron nitride and silicon nitride

    NASA Technical Reports Server (NTRS)

    Cross, J. B.; Lan, E. H.; Smith, C. A.; Whatley, W. J.; Koontz, S. L.

    1990-01-01

    The effects of atomic oxygen on boron nitride (BN) and silicon nitride (Si3N4) have been studied in low Earth orbit (LEO) flight experiments and in a ground-based simulation facility at Los Alamos National Laboratory. Both the in-flight and ground-based experiments employed the materials coated over thin (approx 250 Angstrom) silver films whose electrical resistance was measured in situ to detect penetration of atomic oxygen through the BN and Si3N4 materials. In the presence of atomic oxygen, silver oxidizes to form silver oxide, which has a much higher electrical resistance than pure silver. Permeation of atomic oxygen through BN, as indicated by an increase in the electrical resistance of the silver underneath, was observed in both the in-flight and ground-based experiments. In contrast, no permeation of atomic oxygen through Si3N4 was observed in either the in-flight or ground-based experiments. The ground-based results show good qualitative correlation with the LEO flight results, thus validating the simulation fidelity of the ground-based facility in terms of reproducing LEO flight results.

  5. Synthesis of gallium nitride nanostructures by nitridation of electrochemically deposited gallium oxide on silicon substrate

    PubMed Central

    2014-01-01

    Gallium nitride (GaN) nanostructures were successfully synthesized by the nitridation of the electrochemically deposited gallium oxide (Ga2O3) through the utilization of a so-called ammoniating process. Ga2O3 nanostructures were firstly deposited on Si substrate by a simple two-terminal electrochemical technique at a constant current density of 0.15 A/cm2 using a mixture of Ga2O3, HCl, NH4OH and H2O for 2 h. Then, the deposited Ga2O3 sample was ammoniated in a horizontal quartz tube single zone furnace at various ammoniating times and temperatures. The complete nitridation of Ga2O3 nanostructures at temperatures of 850°C and below was not observed even the ammoniating time was kept up to 45 min. After the ammoniating process at temperature of 900°C for 15 min, several prominent diffraction peaks correspond to hexagonal GaN (h-GaN) planes were detected, while no diffraction peak of Ga2O3 structure was detected, suggesting a complete transformation of Ga2O3 to GaN. Thus, temperature seems to be a key parameter in a nitridation process where the deoxidization rate of Ga2O3 to generate gaseous Ga2O increase with temperature. The growth mechanism for the transformation of Ga2O3 to GaN was proposed and discussed. It was found that a complete transformation can not be realized without a complete deoxidization of Ga2O3. A significant change of morphological structures takes place after a complete transformation of Ga2O3 to GaN where the original nanorod structures of Ga2O3 diminish, and a new nanowire-like GaN structures appear. These results show that the presented method seems to be promising in producing high-quality h-GaN nanostructures on Si. PMID:25593562

  6. Synthesis of gallium nitride nanostructures by nitridation of electrochemically deposited gallium oxide on silicon substrate.

    PubMed

    Ghazali, Norizzawati Mohd; Yasui, Kanji; Hashim, Abdul Manaf

    2014-01-01

    Gallium nitride (GaN) nanostructures were successfully synthesized by the nitridation of the electrochemically deposited gallium oxide (Ga2O3) through the utilization of a so-called ammoniating process. Ga2O3 nanostructures were firstly deposited on Si substrate by a simple two-terminal electrochemical technique at a constant current density of 0.15 A/cm(2) using a mixture of Ga2O3, HCl, NH4OH and H2O for 2 h. Then, the deposited Ga2O3 sample was ammoniated in a horizontal quartz tube single zone furnace at various ammoniating times and temperatures. The complete nitridation of Ga2O3 nanostructures at temperatures of 850°C and below was not observed even the ammoniating time was kept up to 45 min. After the ammoniating process at temperature of 900°C for 15 min, several prominent diffraction peaks correspond to hexagonal GaN (h-GaN) planes were detected, while no diffraction peak of Ga2O3 structure was detected, suggesting a complete transformation of Ga2O3 to GaN. Thus, temperature seems to be a key parameter in a nitridation process where the deoxidization rate of Ga2O3 to generate gaseous Ga2O increase with temperature. The growth mechanism for the transformation of Ga2O3 to GaN was proposed and discussed. It was found that a complete transformation can not be realized without a complete deoxidization of Ga2O3. A significant change of morphological structures takes place after a complete transformation of Ga2O3 to GaN where the original nanorod structures of Ga2O3 diminish, and a new nanowire-like GaN structures appear. These results show that the presented method seems to be promising in producing high-quality h-GaN nanostructures on Si.

  7. Devitrification and delayed crazing of SiO2 on single-crystal silicon and chemically vapor-deposited silicon nitride

    NASA Technical Reports Server (NTRS)

    Choi, Doo Jin; Scott, William D.

    1987-01-01

    The linear growth rate of cristobalite was measured in thin SiO2 films on silicon and chemically vapor-deposited silicon nitride. The presence of trace impurities from alumina furnace tubes greatly increased the crystal growth rate. Under clean conditions, the growth rate was still 1 order-of-magnitude greater than that for internally nucleated crystals in bulk silica. Crystallized films cracked and lifted from the surface after exposure to atmospheric water vapor. The crystallization and subsequent crazing and lifting of protective SiO2 films on silicon nitride should be considered in long-term applications.

  8. Feasibility of Actively Cooled Silicon Nitride Airfoil for Turbine Applications Demonstrated

    NASA Technical Reports Server (NTRS)

    Bhatt, Ramakrishna T.

    2001-01-01

    Nickel-base superalloys currently limit gas turbine engine performance. Active cooling has extended the temperature range of service of nickel-base superalloys in current gas turbine engines, but the margin for further improvement appears modest. Therefore, significant advancements in materials technology are needed to raise turbine inlet temperatures above 2400 F to increase engine specific thrust and operating efficiency. Because of their low density and high-temperature strength and thermal conductivity, in situ toughened silicon nitride ceramics have received a great deal of attention for cooled structures. However, the high processing costs and low impact resistance of silicon nitride ceramics have proven to be major obstacles for widespread applications. Advanced rapid prototyping technology in combination with conventional gel casting and sintering can reduce high processing costs and may offer an affordable manufacturing approach. Researchers at the NASA Glenn Research Center, in cooperation with a local university and an aerospace company, are developing actively cooled and functionally graded ceramic structures. The objective of this program is to develop cost-effective manufacturing technology and experimental and analytical capabilities for environmentally stable, aerodynamically efficient, foreign-object-damage-resistant, in situ toughened silicon nitride turbine nozzle vanes, and to test these vanes under simulated engine conditions. Starting with computer aided design (CAD) files of an airfoil and a flat plate with internal cooling passages, the permanent and removable mold components for gel casting ceramic slips were made by stereolithography and Sanders machines, respectively. The gel-cast part was dried and sintered to final shape. Several in situ toughened silicon nitride generic airfoils with internal cooling passages have been fabricated. The uncoated and thermal barrier coated airfoils and flat plates were burner rig tested for 30 min without

  9. Molecular transport through nanoporous silicon nitride membranes produced from self-assembling block copolymers.

    PubMed

    Montagne, Franck; Blondiaux, Nicolas; Bojko, Alexandre; Pugin, Raphaël

    2012-09-28

    To achieve fast and selective molecular filtration, membrane materials must ideally exhibit a thin porous skin and a high density of pores with a narrow size distribution. Here, we report the fabrication of nanoporous silicon nitride membranes (NSiMs) at the full wafer scale using a versatile process combining block copolymer (BCP) self-assembly and conventional photolithography/etching techniques. In our method, self-assembled BCP micelles are used as templates for creating sub-100 nm nanopores in a thin low-stress silicon nitride layer, which is then released from the underlying silicon wafer by etching. The process yields 100 nm thick free-standing NSiMs of various lateral dimensions (up to a few mm(2)). We show that the membranes exhibit a high pore density, while still retaining excellent mechanical strength. Permeation experiments reveal that the molecular transport rate across NSiMs is up to 16-fold faster than that of commercial polymeric membranes. Moreover, using dextran molecules of various molecular weights, we also demonstrate that size-based separation can be achieved with a very good selectivity. These new silicon nanosieves offer a relevant technological alternative to commercially available ultra- and microfiltration membranes for conducting high resolution biomolecular separations at small scales.

  10. Thermal nitridation of silicon dioxide at atmospheric pressure. Physico-chemical and electrical characterization

    NASA Astrophysics Data System (ADS)

    Chartier, J. L.; Plantard, M.; Serrari, A.; Le Bihan, R.; Rigo, S.; Ledys, J. L.

    1989-11-01

    Thermal nitridation of silicon dioxide films was performed at atmospheric pressure in a furnace under NH 3 and at a temperature of 1100°C. Physico-chemical characterizations of the grown films were carried out by nuclear methods (NRA and ERD), electron spectroscopies (AES and ESCA) and ellipsometry. NRA measurements give quantitative results about nitrogen and oxygen concentrations and on the same samples AES and ESCA give the distribution of these elements throughout the films. The variation of the stoichiometry with the depth is determined. It is shown that the resulting nitroxide film is inhomogeneous with a nitrogen-rich surface layer and an interface pile-up of nitrogen. Nitridation is studied versus nitridation time and oxide thickness. The incorporation of nitrogen at the surface is higher when the initial oxide is thinner. As regards the bulk, the incorporation kinetics of nitrogen depends on the initial oxide thickness. Electrical characterizations of MIS structures realized with these nitroxide films show their good quality: flat-band voltage shifts are low; the difference in nature of interface charges is shown; conduction in the film is enhanced by nitridation as well as break-down electrical field.

  11. Charging behavior of silicon nitride based non-volatile memory structures with embedded semiconductor nanocrystals

    NASA Astrophysics Data System (ADS)

    Horváth, Zs. J.; Basa, P.; Jászi, T.; Molnár, K. Z.; Pap, A. E.; Molnár, Gy.

    2013-03-01

    The charging behavior of MNS (metal-nitride-silicon) and MNOS (metal-nitride-oxide-silicon) structures containing Si or Ge nanocrystals were studied by capacitance-voltage (C-V) and memory window measurements and by simulation. Both the width of hysteresis of C-V characteristics and the injected charge exhibited exponential dependence on the charging voltage at moderate voltage values, while at high voltages the width of hysteresis of C-V characteristics and the injected charge exhibited saturation. The memory window for reference MNS structure without nanocrystals was wider than that for reference MNOS structures. The presence of nanocrystals enhanced the charging behavior of MNOS structures, but in MNS structures nanocrystals exhibited the opposite effect. The main conclusion is that the presence of nanocrystals or other deep levels close to the Si surface enhances the charge injection properties due to the increased tunneling probability, but nanocrystals or other deep levels located far from the Si surface in the nitride layer do not enhance, but even can degrade the charging behavior by the capture of charge carriers.

  12. High Temperature Oxidation and Mechanical properties of Silicon Nitride.

    DTIC Science & Technology

    1980-11-30

    Rowcliffe, and R. H. Lamoreaux Prepared for: Air Force Office of Scientific Research/NE Building 410 Boiling Air Force Base, D.C. 20332 Attention: Captain...samples were examined by x-ray dif- fraction. Cristobalite and a-Si 3N4 lines were found, but there was no evidence of silicon oxynitride. In most... cristobalite is the stable form.𔃾 A large amount of evi- dence indicates that this phase transiticn was not the primary reason for the increased

  13. Ellipsometric studies of sputtered silicon nitride on n-GaAs

    NASA Technical Reports Server (NTRS)

    Peng, Y. K.; Bu-Abbud, G.; Alterovitz, S. A.; Woollam, J. A.; Bayraktarogulu, B.; Langer, D.; Liu, D.; Haugland, E.

    1982-01-01

    Ellipsometry, which is the study of optical systems through their effect on polarized light, is a nondestructive technique offering extremely high sensitivity and in situ operation. One of the intriguing possibilities is to make use of the high sensitivity of ellipsometry for studying the very thin interface between an insulating film and a semiconductor substrate. Researchers have been especially interested in native or anodic oxides. In a recent study, Aspnes and Theeten used ellipsometry to study the interface between silicon and its thermally grown oxide, SiO2. These authors were able to conclude that the interface consisted of a 7 +/- 2 A graded region of atomically mixed silicon and oxygen. In this paper we report both analysis and experimental results for the system: sputtered silicon nitride on (100) n-type gallium arsenide.

  14. Power mixture and green body for producing silicon nitride base articles of high fracture toughness and strength

    DOEpatents

    Huckabee, M.L.; Buljan, S.T.; Neil, J.T.

    1991-09-17

    A powder mixture and a green body for producing a silicon nitride-based article of improved fracture toughness and strength are disclosed. The powder mixture includes (a) a bimodal silicon nitride powder blend consisting essentially of about 10-30% by weight of a first silicon nitride powder of an average particle size of about 0.2 [mu]m and a surface area of about 8-12m[sup 2]g, and about 70-90% by weight of a second silicon nitride powder of an average particle size of about 0.4-0.6 [mu]m and a surface area of about 2-4 m[sup 2]/g, (b) about 10-50 percent by volume, based on the volume of the densified article, of refractory whiskers or fibers having an aspect ratio of about 3-150 and having an equivalent diameter selected to produce in the densified article an equivalent diameter ratio of the whiskers or fibers to grains of silicon nitride of greater than 1.0, and (c) an effective amount of a suitable oxide densification aid. The green body is formed from the powder mixture, an effective amount of a suitable oxide densification aid, and an effective amount of a suitable organic binder. No Drawings

  15. Impact of interstitial oxygen trapped in silicon during plasma growth of silicon oxy-nitride films for silicon solar cell passivation

    NASA Astrophysics Data System (ADS)

    Saseendran, Sandeep S.; Saravanan, S.; Raval, Mehul C.; Kottantharayil, Anil

    2016-03-01

    Low temperature oxidation of silicon in plasma ambient is a potential candidate for replacing thermally grown SiO2 films for surface passivation of crystalline silicon solar cells. In this work, we report the growth of silicon oxy-nitride (SiOxNy) film in N2O plasma ambient at 380 °C. However, this process results in trapping of interstitial oxygen within silicon. The impact of this trapped interstitial oxygen on the surface passivation quality is investigated. The interstitial oxygen trapped in silicon was seen to decrease for larger SiOxNy film thickness. Effective minority carrier lifetime (τeff) measurements on n-type float zone silicon wafers passivated by SiOxNy/silicon nitride (SiNv:H) stack showed a decrease in τeff from 347 μs to 68 μs, for larger SiOxNy film thickness due to degradation in interface properties. From high frequency capacitance-voltage measurements, it was concluded that the surface passivation quality was governed by the interface parameters (fixed charge density and interface state density). High temperature firing of the SiOxNy/SiNv:H stack resulted in a severe degradation in τeff due to migration of oxygen across the interface into silicon. However, on using the SiOxNy/SiNv:H stack for emitter surface passivation in screen printed p-type Si solar cells, an improvement in short wavelength response was observed in comparison to the passivation by SiNv:H alone, indicating an improvement in emitter surface passivation quality.

  16. Enhancement of polycrystalline silicon solar cells efficiency using indium nitride particles

    NASA Astrophysics Data System (ADS)

    Alkis, Sabri; Imtiaz Chowdhury, Farsad; Alevli, Mustafa; Dietz, Nikolaus; Yalızay, Berna; Aktürk, Selçuk; Nayfeh, Ammar; Kemal Okyay, Ali

    2015-10-01

    In this work, we present a hybrid indium nitride particle/polycrystalline silicon solar cell based on 230 nm size indium nitride particles (InN-Ps) obtained through laser ablation. The solar cell performance measurements indicate that there is an absolute 1.5% increase (Δη) in the overall solar cell efficiency due to the presence of InN-Ps. Within the spectral range 300-1100 nm, improvements of up to 8.26% are observed in the external quantum efficiency (EQE) and increases of up to 8.75% are observed in the internal quantum efficiency (IQE) values of the corresponding solar cell. The enhancement in power performance is due to the down-shifting properties of the InN-Ps. The electrical measurements are supplemented by TEM, Raman, UV/VIS and PL spectroscopy of the InN-Ps.

  17. Resonant second harmonic generation in a gallium nitride two-dimensional photonic crystal on silicon

    SciTech Connect

    Zeng, Y.; Roland, I.; Checoury, X.; Han, Z.; El Kurdi, M.; Sauvage, S.; Boucaud, P.; Gayral, B.; Brimont, C.; Guillet, T.; Mexis, M.; Semond, F.

    2015-02-23

    We demonstrate second harmonic generation in a gallium nitride photonic crystal cavity embedded in a two-dimensional free-standing photonic crystal platform on silicon. The photonic crystal nanocavity is optically pumped with a continuous-wave laser at telecom wavelengths in the transparency window of the nitride material. The harmonic generation is evidenced by the spectral range of the emitted signal, the quadratic power dependence vs. input power, and the spectral dependence of second harmonic signal. The harmonic emission pattern is correlated to the harmonic polarization generated by the second-order nonlinear susceptibilities χ{sub zxx}{sup (2)}, χ{sub zyy}{sup (2)} and the electric fields of the fundamental cavity mode.

  18. Hard carbon nitride and method for preparing same

    DOEpatents

    Haller, Eugene E.; Cohen, Marvin L.; Hansen, William L.

    1992-01-01

    Novel crystalline .alpha. (silicon nitride-like)-carbon nitride and .beta. (silicon nitride-like)-carbon nitride are formed by sputtering carbon in the presence of a nitrogen atmosphere onto a single crystal germanium or silicon, respectively, substrate.

  19. Adhesion, friction, and wear of plasma-deposited thin silicon nitride films at temperatures to 700 C

    NASA Technical Reports Server (NTRS)

    Miyoshi, K.; Pouch, J. J.; Alterovitz, S. A.; Pantic, D. M.; Johnson, G. A.

    1988-01-01

    The adhesion, friction, and wear behavior of silicon nitride films deposited by low- and high-frequency plasmas (30 kHz and 13.56 MHz) at various temperatures to 700 C in vacuum were examined. The results of the investigation indicated that the Si/N ratios were much greater for the films deposited at 13.56 MHz than for those deposited at 30 kHz. Amorphous silicon was present in both low- and high-frequency plasma-deposited silicon nitride films. However, more amorphous silicon occurred in the films deposited at 13.56 MHz than in those deposited at 30 kHz. Temperature significantly influenced adhesion, friction, and wear of the silicon nitride films. Wear occurred in the contact area at high temperature. The wear correlated with the increase in adhesion and friction for the low- and high-frequency plasma-deposited films above 600 and 500 C, respectively. The low- and high-frequency plasma-deposited thin silicon nitride films exhibited a capability for lubrication (low adhesion and friction) in vacuum at temperatures to 500 and 400 C, respectively.

  20. Effects of deposition temperature on the mechanical and physical properties of silicon nitride thin films

    NASA Astrophysics Data System (ADS)

    Walmsley, B. A.; Liu, Y.; Hu, X. Z.; Bush, M. B.; Winchester, K. J.; Martyniuk, M.; Dell, J. M.; Faraone, L.

    2005-08-01

    This study investigates the mechanical and physical properties of low-temperature plasma-enhanced chemical-vapor-deposited silicon nitride thin films, with particular respect to the effect of deposition temperature. The mechanical properties of the films were evaluated by both nanoindentation and microcantilever beam-bending techniques. The cantilever beam specimens were fabricated from silicon nitride thin films deposited on (100) silicon wafer by bulk micromachining. The density of the films was determined from quartz crystal microbalance measurements, as well as from the resonant modes of the cantilever beams, which were mechanically excited using an atomic force microscope. It was found that both the Young's modulus and density of the films were significantly reduced with decreasing deposition temperature. The decrease in Young's modulus is attributed to the decreasing material density. The decrease in density with decreasing deposition temperature is believed to be due to the slower diffusion rates of the deposited species, which retarded the densification of the film during the deposition process.

  1. Fabricating capacitive micromachined ultrasonic transducers with a novel silicon-nitride-based wafer bonding process.

    PubMed

    Logan, Andrew; Yeow, John T W

    2009-05-01

    We report the fabrication and experimental testing of 1-D 23-element capacitive micromachined ultrasonic transducer (CMUT) arrays that have been fabricated using a novel wafer-bonding process whereby the membrane and the insulation layer are both silicon nitride. The membrane and cell cavities are deposited and patterned on separate wafers and fusion-bonded in a vacuum environment to create CMUT cells. A user-grown silicon-nitride membrane layer avoids the need for expensive silicon-on-insulator (SOI) wafers, reduces parasitic capacitance, and reduces dielectric charging. It allows more freedom in selecting the membrane thickness while also providing the benefits of wafer-bonding fabrication such as excellent fill factor, ease of vacuum sealing, and a simplified fabrication process when compared with the more standard sacrificial release process. The devices fabricated have a cell diameter of 22 microm, a membrane thickness of 400 nm, a gap depth of 150 nm, and an insulation thickness of 250 nm. The resonant frequency of the CMUT in air is 17 MHz and has an attenuation compensated center frequency of approximately 9 MHz in immersion with a -6 dB fractional bandwidth of 123%. This paper presents the fabrication process and some characterization results.

  2. Effect of model biological media of stability of complex of silver nanoparticles applied onto silicon nitride substrate.

    PubMed

    Afanasiev, S A; Tsapko, L P; Kurzina, I A; Chuhlomina, L N; Babokin, V E

    2010-12-01

    We studied stability of complexes of silver nanoparticles and silicon nitride before and after their interaction with liquid media and after passing through bacterial filters. According to scanning electron microscopy data, contact with fluids and passage through bacterial filters reduced the content of silver nanoparticles in complexes compared to that in initial complexes. It was shown that these differences depended on both initial characteristics of the examined samples and the used liquid media. The complex Ag/Si3N4 obtained after 5 silver reduction cycles and containing 15% α- and 85% β-modifications of silicon nitride (sample No. 2) was characterized by maximum stability. Culture medium produced more aggressive effect on stability of the studied complexes. We concluded that the effect of culture media on stability of silver nanoparticles-silicon nitride complexes depends on phase composition of the substrate and method of application of silver nanoparticles.

  3. A study on the ESD damage of a silicon oxy-nitride hard mask on the chromium surface of PSM blank

    NASA Astrophysics Data System (ADS)

    Moon, Songbae; Kim, Heebom; Shin, Inkyun; Jeon, Chanuk

    2013-09-01

    A thin silicon oxy-nitride hard mask on the PSM blank is needed for the feature patterning with the size smaller than 70 nm. It is a good material for hard mask. However, the electrical property of silicon oxy-nitride with the thickness smaller than 10 nm causes the chromium surface damage during the mask processes. From the measurement of the surface damage, we figure out that the chromium surface damage is originated from the charging and the dielectric breakdown phenomena. In our present work, two types of silicon oxy-nitride film with the thicknesses of 5 nm and 12 nm are tested for verifying optimal mask fabrication processes. We find that the occurrence of ESD damage is related to the thickness of silicon oxy-nitride hard mask and mask fabrication process conditions. The optimal fabrication process condition for silicon oxy-nitride thin film hard mask, in which break-down never occurs, is discussed.

  4. Silicon nitride films for the protective functional coating: blood compatibility and biomechanical property study.

    PubMed

    Shi, Zhifeng; Wang, Yingjun; Du, Chang; Huang, Nan; Wang, Lin; Ning, Chengyun

    2012-12-01

    Behaviors of silicon nitride films and their relation to blood compatibility and biomechanical have been interesting subjects to researchers. A systematic blood compatibility and biomechanical property investigation on the deposition of silicon-nitride films under varying N₂ and CF₄ flows was carried out by direct current unbalanced magnetron sputtering techniques. Significant role of surface property, chemical bonding state of silicon nitride film and blood compatibility, mechanical properties for the films were observed. The chemical bonding configurations, surface topography, contact angle and mechanical properties were characterized by means of X-ray photoelectron spectroscopy (XPS), atomic force microscopy (AFM) and nano-indentation technique and CSEM pin-on-disk tribometer. Blood compatibility of the films was evaluated by platelet adhesion investigation. The results of the platelet adhesion tests shown that the effect of fluorine and nitrogen-doped revealed an intimate relationship between the ratio of polar component and dispersion component of the surface energy and its hemocompatibility. Si-N-O coating can be a great candidate for developing antithrombogenic surfaces in blood contacting materials. The chemical bonding state made an adjustment in microstructured surfaces, once in the totally wettable configuration, may improve the initial contact between platelet and biomedical materials, due to the appropriate ratio of dispersion component and polar component. To resist wear, biomedical components require coatings that are tough and hard, have low friction, and are bio-inert. The study suggests that by Si-N coating the metal surfaces could be a choice to prolong the life of the sliding pair Co-Cr-Mo alloy/UHMWPE implants.

  5. Gallium nitride heterostructures on 3D structured silicon.

    PubMed

    Fündling, Sönke; Sökmen, Unsal; Peiner, Erwin; Weimann, Thomas; Hinze, Peter; Jahn, Uwe; Trampert, Achim; Riechert, Henning; Bakin, Andrey; Wehmann, Hergo-Heinrich; Waag, Andreas

    2008-10-08

    We investigated GaN-based heterostructures grown on three-dimensionally patterned Si(111) substrates by metal organic vapour phase epitaxy, with the goal of fabricating well controlled high quality, defect reduced GaN-based nanoLEDs. The high aspect ratios of such pillars minimize the influence of the lattice mismatched substrate and improve the material quality. In contrast to other approaches, we employed deep etched silicon substrates to achieve a controlled pillar growth. For that a special low temperature inductively coupled plasma etching process has been developed. InGaN/GaN multi-quantum-well structures have been incorporated into the pillars. We found a pronounced dependence of the morphology of the GaN structures on the size and pitch of the pillars. Spatially resolved optical properties of the structures are analysed by cathodoluminescence.

  6. Rapid sintering of silicon nitride foams decorated with one-dimensional nanostructures by intense thermal radiation

    NASA Astrophysics Data System (ADS)

    Li, Duan; Guzi de Moraes, Elisângela; Guo, Peng; Zou, Ji; Zhang, Junzhan; Colombo, Paolo; Shen, Zhijian

    2014-08-01

    Silicon nitride foams were prepared by direct foaming and subsequent rapid sintering at 1600 °C. The intense thermal radiation generated under the pressureless spark plasma sintering condition facilitated necking of Si3N4 grains. The prepared foams possessed a porosity of ˜80 vol% and a compressive strength of ˜10 MPa, which required only ˜30 min for the entire sintering processes. Rapid growth of one-dimensional SiC nanowires from the cell walls was also observed. Thermodynamic calculations indicated that the vapor-liquid-solid model is applicable to the formation of SiC nanowires under vacuum.

  7. Realizing topological edge states in a silicon nitride microring-based photonic integrated circuit.

    PubMed

    Yin, Chenxuan; Chen, Yujie; Jiang, Xiaohui; Zhang, Yanfeng; Shao, Zengkai; Xu, Pengfei; Yu, Siyuan

    2016-10-15

    Topological edge states in a photonic integrated circuit based on the platform of silicon nitride are demonstrated with a two-dimensional coupled resonator optical waveguide array involving the synthetic magnetic field for photons at near-infrared wavelengths. Measurements indicate that the topological edge states can be observed at certain wavelengths, with light travelling around the boundary of the array. Combined with the induced disorders in fabrication near the edge, the system shows the defect immunity under the topological protection of edge states.

  8. Rapid sintering of silicon nitride foams decorated with one-dimensional nanostructures by intense thermal radiation.

    PubMed

    Li, Duan; Guzi de Moraes, Elisângela; Guo, Peng; Zou, Ji; Zhang, Junzhan; Colombo, Paolo; Shen, Zhijian

    2014-08-01

    Silicon nitride foams were prepared by direct foaming and subsequent rapid sintering at 1600 °C. The intense thermal radiation generated under the pressureless spark plasma sintering condition facilitated necking of Si3N4 grains. The prepared foams possessed a porosity of ∼80 vol% and a compressive strength of ∼10 MPa, which required only ∼30 min for the entire sintering processes. Rapid growth of one-dimensional SiC nanowires from the cell walls was also observed. Thermodynamic calculations indicated that the vapor-liquid-solid model is applicable to the formation of SiC nanowires under vacuum.

  9. Enhancement of oxidation resistance of NBD 200 silicon nitride ceramics by aluminum implantation

    NASA Astrophysics Data System (ADS)

    Mukundhan, Priya

    Silicon nitride (Si3N4) ceramics are leading candidates for high temperature structural applications. They have already demonstrated functional capabilities well beyond the limits of conventional metals and alloys in advanced diesel and turbine engines. However, the practical exploitation of these benefits is limited by their oxidation and associated degradation processes in chemically aggressive environments. Additives and impurities in Si3N4 segregate to the surface of Si3N 4 and accelerate its high temperature oxidation process. This study aims to investigate the oxidation behavior of Norton NBD 200 silicon nitride (hot isostatically pressed with ˜1 wt.% MgO) and its modification by aluminum surface alloying. NBD 200 samples tribochemically polished to a mirror finish (10 nm) were implanted with 5, 10, 20 and 30 at.% aluminum at multienergies and multi-doses to achieve a uniform implant depth distribution to 200 nm. Unimplanted and aluminum-implanted samples were oxidized at 800°--1100°C in 1 atm O2 for 0.5--10 hours. Oxidation kinetics was determined using profilometry in conjunction with etch patterning. The morphological, structural and chemical characteristics of the oxide were characterized by various analytical techniques such as scanning electron microscope and energy dispersive x-ray analysis, secondary ion mass spectrometry and x-ray photoelectron spectroscopy. Oxidation of NBD 200 follows parabolic kinetics in the temperature range investigated and the process is diffusion-controlled. The oxide layers are enriched with sodium and magnesium from the bulk of the Si3N 4. The much higher oxidation rate for NBD 200 silicon nitride than for other silicon nitride ceramics with a similar amount of MgO is attributed to the presence of sodium. The rate-controlling mechanism is the outward diffusion of Mg2+ from the grain boundaries to the oxide scale. Aluminum implantation alleviates the detrimental effects of Na+ and Mg2+; not only is the rate of oxidation

  10. Silicon-nitride photonic circuits interfaced with monolayer MoS{sub 2}

    SciTech Connect

    Wei, Guohua; Stanev, Teodor K.; Czaplewski, David A.; Jung, Il Woong; Stern, Nathaniel P.

    2015-08-31

    We report on the integration of monolayer molybdenum disulphide with silicon nitride microresonators assembled by visco-elastic layer transfer techniques. Evanescent coupling from the resonator mode to the monolayer is confirmed through measurements of cavity transmission. The absorption of the monolayer semiconductor flakes in this geometry is determined to be 850 dB/cm, which is larger than that of graphene and black phosphorus with the same thickness. This technique can be applied to diverse monolayer semiconductors for assembling hybrid optoelectronic devices such as photodetectors and modulators operating over a wide spectral range.

  11. Structural Analysis of a Magnetically Actuated Silicon Nitride Micro-Shutter for Space Applications

    NASA Technical Reports Server (NTRS)

    Loughlin, James P.; Fettig, Rainer K.; Moseley, S. Harvey; Kutyrev, Alexander S.; Mott, D. Brent; Obenschain, Arthur F. (Technical Monitor)

    2002-01-01

    Finite element models have been created to simulate the electrostatic and electromagnetic actuation of a 0.5gm silicon nitride micro-shutter for use in a spacebased Multi-object Spectrometer (MOS). The micro-shutter uses a torsion hinge to go from the closed, 0 degree, position, to the open, 90 degree position. Stresses in the torsion hinge are determined with a large deformation nonlinear finite element model. The simulation results are compared to experimental measurements of fabricated micro-shutter devices.

  12. Observation of transparency of Erbium-doped silicon nitride in photonic crystal nanobeam cavities.

    PubMed

    Gong, Yiyang; Makarova, Maria; Yerci, Selcuk; Li, Rui; Stevens, Martin J; Baek, Burm; Nam, Sae Woo; Dal Negro, Luca; Vuckovic, Jelena

    2010-06-21

    One dimensional nanobeam photonic crystal cavities are fabricated in an Er-doped amorphous silicon nitride layer. Photoluminescence from the cavities around 1.54 microm is studied at cryogenic and room temperatures at different optical pump powers. The resonators demonstrate Purcell enhanced absorption and emission rates, also confirmed by time resolved measurements. Resonances exhibit linewidth narrowing with pump power, signifying absorption bleaching and the onset of stimulated emission in the material at both 5.5 K and room temperature. We estimate from the cavity linewidths that Er has been pumped to transparency at the cavity resonance wavelength.

  13. High-temperature properties of a silicon nitride-intermetallic silicide composite

    SciTech Connect

    Matsumoto, R.L.K.; Weaver, G.G.

    1991-10-01

    Ceramic composites composed of a silicon nitride matrix containing a dispersed silicide phase have been fabricated. While many silicides are brittle at room temperature, they become ductile at high temperatures as they undergo a brittle-to-ductile transition. In contrast to composites having silicides as the matrix phase, the material examined contains dispersed cobalt silicide particulates and has room temperature toughness of 10 MPa sq rt m. The toughness increases to 12 MPa sq rt m at 800 C. When the brittle-to-ductile transition temperature is exceeded, the toughness at 1100 C drops to 6 MPa sq rt m. 13 refs.

  14. Silicon nitride membrane resonators at millikelvin temperatures with quality factors exceeding 108

    NASA Astrophysics Data System (ADS)

    Yuan, Mingyun; Cohen, Martijn A.; Steele, Gary A.

    2015-12-01

    We study the mechanical dissipation of the fundamental mode of millimeter-sized, high quality-factor (Q) metalized silicon nitride membranes at temperatures down to 14 mK using a three-dimensional optomechanical cavity. Below 200 mK, high-Q modes of the membranes show a diverging increase of Q with decreasing temperature, reaching Q =1.27 ×108 at 14 mK, an order of magnitude higher than that reported before. The ultra-low dissipation makes the membranes highly attractive for the study of optomechanics in the quantum regime, as well as for other applications of optomechanics such as microwave to optical photon conversion.

  15. Processing and mechanical properties of silicon nitride formed by robocasting aqueous slurries

    SciTech Connect

    HE,GUOPING; HIRSCHFELD,DEIDRE A.; CESARANO III,JOSEPH

    2000-01-26

    Robocasting is a new freeform fabrication technique for dense ceramics. It uses robotics to control deposition of ceramic slurries through an orifice. The optimization of concentrated aqueous Si{sub 3}N{sub 4} slurry properties to achieve high green density robocast bodies and subsequent high sintered densities was investigated. The effects of pH, electrolyte, additives and solids loading on the dispersion and rheological properties of Si{sub 3}N{sub 4} slurries were determined. The mechanical behavior of sintered robocast bars was determined and compared to conventionally produced silicon nitride ceramics.

  16. Ammonia formation caused by the presence of water in the wet grinding of silicon nitride powder

    NASA Technical Reports Server (NTRS)

    Kanno, Y.; Suzuki, K.; Kuwahara, Y.

    1984-01-01

    Si3 N4 powder (amorphous, alpha-, and beta-Si3 N4) was mixed with MeOH containing 8.87 mol. % H2O and ground. The NH3 generation rapidly increased after a grinding time of 100 hours. Silicon nitride sintered material was chosen as one of the high temperature, high strength structural materials and studies of the control of the raw material powder, preparation of the sintered body (finding the right assistant, hot press, high pressure sintering, fracture toughness and oxidation at high temperature were performed.

  17. Fracture of yttria-doped, sintered reaction-bonded silicon nitride

    NASA Technical Reports Server (NTRS)

    Govila, R. K.; Mangels, J. A.; Baer, J. R.

    1985-01-01

    Flexural strength of an yttria-doped, slip-cast, sintered reaction-bonded silicon nitride was evaluated as a function of temperature (20 to 1400 C in air), applied stress, and time. Static oxidation at 700 to 1400 C was investigated in detail; in tests at 1000 C in air, the material showed anomalous weight gain. Flexural stress-rupture testing at 800 to 1200 C in air indicated that the material is susceptible to stress-enhanced oxidation and early failure. Fractographic evidence for time-dependent and -independent failures is presented.

  18. Development of a constitutive model for creep and life prediction of advanced silicon nitride ceramics

    SciTech Connect

    Ding, J.L.; Liu, K.C.; Brinkman, C.R.

    1992-12-31

    A constitutive model capable of describing deformation and predicting rupture life was developed for high temperature ceramic materials under general thermal-mechanical loading conditions. The model was developed based on the deformation and fracture behavior observed from a systematic experimental study on an advanced silicon nitride (Si{sub 3}N{sub 4}) ceramic material. Validity of the model was evaluated with reference to creep and creep rupture data obtained under constant and stepwise-varied loading conditions, including the effects of annealing on creep and creep rupture behavior.

  19. Strength and fatigue of NT551 silicon nitride and NT551 diesel exhaust valves

    SciTech Connect

    Andrews, M.J.; Werezczak, A.A.; Kirkland, T.P.; Breder, K.

    2000-02-01

    The content of this report is excerpted from Mark Andrew's Ph.D. Thesis (Andrews, 1999), which was funded by a DOE/OTT High Temperature Materials Laboratory Graduate Fellowship. It involves the characterization of NT551 and valves fabricated with it. The motivations behind using silicon nitride (Si{sub 3}N{sub 4}) as an exhaust valve for a diesel engine are presented in this section. There are several economic factors that have encouraged the design and implementation of ceramic components for internal combustion (IC) engines. The reasons for selecting the diesel engine valve for this are also presented.

  20. Estimation of crack closure stresses for in situ toughened silicon nitride with 8 wt pct scandia

    NASA Technical Reports Server (NTRS)

    Choi, Sung R.; Salem, Jonathan A.; Sanders, William A.

    1992-01-01

    An 8-wt pct-scandia silicon nitride with an elongated grain structure was fabricated. The material exhibited high fracture toughness and a rising R-curve as measured by the indentation strength technique. The 'toughening' exponent m was found to be m about 0.1. The high fracture toughness and R-curve behavior was attributed mainly to bridging of the crack faces by the elongated grains. The crack closure (bridging) stress distribution in the wake region of the crack tip was estimated as a function of crack size from the R-curve data, with an arbitrarily assumed distribution function.

  1. The effect of preparation conditions on the structure and mechanical properties of reaction-sintered silicon nitride

    NASA Technical Reports Server (NTRS)

    Heinrich, J.

    1980-01-01

    The microstructure of reaction sintered silicon nitride (RSSN) was changed over a wide range by varying the grain density, grain size of the silicon starting powder, nitriding conditions, and by introducing artificial pores. The influence of single microstructural parameters on mechanical properties like room temperature strength, creep behavior, and resistance to thermal shock was investigated. The essential factors influencing these properties were found to be total porosity, pore size distribution, and the fractions of alpha and beta Si3N4. In view of high temperature engineering applications of RSSN, potentials for optimizing the material's properties by controlled processing are discussed.

  2. Organometallic chemical vapor deposition of silicon nitride films enhanced by atomic nitrogen generated from surface-wave plasma

    SciTech Connect

    Okada, H.; Kato, M.; Ishimaru, T.; Sekiguchi, H.; Wakahara, A.; Furukawa, M.

    2014-02-20

    Organometallic chemical vapor deposition of silicon nitride films enhanced by atomic nitrogen generated from surface-wave plasma is investigated. Feasibility of precursors of triethylsilane (TES) and bis(dimethylamino)dimethylsilane (BDMADMS) is discussed based on a calculation of bond energies by computer simulation. Refractive indices of 1.81 and 1.71 are obtained for deposited films with TES and BDMADMS, respectively. X-ray photoelectron spectroscopy (XPS) analysis of the deposited film revealed that TES-based film coincides with the stoichiometric thermal silicon nitride.

  3. Surface adhesion between hexagonal boron nitride nanotubes and silicon based on lateral force microscopy

    NASA Astrophysics Data System (ADS)

    Hsu, Jung-Hui; Chang, Shuo-Hung

    2010-01-01

    This study presents the surface adhesion between hexagonal boron nitride nanotube (BNNT) and silicon based on lateral manipulation in an atomic force microscope (AFM). The BNNT was mechanically manipulated by the lateral force of an AFM pyramidal silicon probe using the scan mechanism in the imaging mode. With a controlled normal force of the AFM probe and the lateral motion, the lateral force applied to the BNNT could overcome the surface adhesion between BNNT and silicon surface. The individual BNNT is forced to slide and rotate on the silicon surface. Based on the recorded force curve, the calculated shear stress due to surface adhesion is 0.5 GPa. And the specific sliding energy loss is 0.2 J/m 2. Comparing BNNTs and carbon nanotube (CNT), the shear stress and specific sliding energy loss of BNNT are an order of magnitude larger than that of CNT. Therefore, the results show that the surface adhesion between BNNT and silicon surface is higher than that of CNT.

  4. Power mixture and green body for producing silicon nitride base & articles of high fracture toughness and strength

    DOEpatents

    Huckabee, Marvin L.; Buljan, Sergej-Tomislav; Neil, Jeffrey T.

    1991-01-01

    A powder mixture and a green body for producing a silicon nitride-based article of improved fracture toughness and strength. The powder mixture includes 9a) a bimodal silicon nitride powder blend consisting essentially of about 10-30% by weight of a first silicon mitride powder of an average particle size of about 0.2 .mu.m and a surface area of about 8-12m.sup.2 g, and about 70-90% by weight of a second silicon nitride powder of an average particle size of about 0.4-0.6 .mu.m and a surface area of about 2-4 m.sup.2 /g, (b) about 10-50 percent by volume, based on the volume of the densified article, of refractory whiskers or fibers having an aspect ratio of about 3-150 and having an equivalent diameter selected to produce in the densified articel an equivalent diameter ratio of the whiskers or fibers to grains of silicon nitride of greater than 1.0, and (c) an effective amount of a suitable oxide densification aid. The green body is formed from the powder mixture, an effective amount of a suitable oxide densification aid, and an effective amount of a suitable organic binder.

  5. Silicon-on-nitride structures for mid-infrared gap-plasmon waveguiding

    SciTech Connect

    Mu, Jianwei E-mail: soref@rcn.com; Kimerling, Lionel C.; Michel, Jurgen; Soref, Richard E-mail: soref@rcn.com

    2014-01-20

    Silicon-on-nitride (SON) is a convenient, low-loss platform for mid-infrared group IV plasmonics and photonics. We have designed 5-layer SON channel-waveguides and slab-waveguides for the 2.0 to 5.4 μm wavelength range and have simulated the resulting three-dimensional (3D) and two-dimensional (2D) SON gap-plasmon modes. Our simulations show propagation lengths of ∼60 μm for 3D gap-strip modes having a 0.003 λ{sup 2} cross-section. Because the ∼50-nm SON (Si{sub 3}N{sub 4}) mode region is also a gate insulator between silver (Ag) and n-doped Silicon (Si), metal-oxide-semiconductor accumulation gating is available for electro-optical loss modulation of the gap-confined mode.

  6. Silicon nitride CMOS-compatible platform for integrated photonics applications at visible wavelengths.

    PubMed

    Romero-García, Sebastian; Merget, Florian; Zhong, Frank; Finkelstein, Hod; Witzens, Jeremy

    2013-06-17

    Silicon nitride is demonstrated as a high performance and cost-effective solution for dense integrated photonic circuits in the visible spectrum. Experimental results for nanophotonic waveguides fabricated in a standard CMOS pilot line with losses below 0.71dB/cm in an aqueous environment and 0.51dB/cm with silicon dioxide cladding are reported. Design and characterization of waveguide bends, grating couplers and multimode interference couplers (MMI) at a wavelength of 660 nm are presented. The index contrast of this technology enables high integration densities with insertion losses below 0.05 dB per 90° bend for radii as small as 35 µm. By a proper design of the buried oxide layer thickness, grating couplers with efficiencies above 38% for the TE polarization have been obtained.

  7. Solution-Based Photo-Patterned Gold Film Formation on Silicon Nitride.

    PubMed

    Bandara, Y M Nuwan D Y; Karawdeniya, Buddini Iroshika; Whelan, Julie C; Ginsberg, Lucas D S; Dwyer, Jason R

    2016-12-28

    Silicon nitride fabricated by low-pressure chemical vapor deposition (LPCVD) to be silicon-rich (SiNx), is a ubiquitous insulating thin film in the microelectronics industry, and an exceptional structural material for nanofabrication. Free-standing <100 nm thick SiNx membranes are especially compelling, particularly when used to deliver forefront molecular sensing capabilities in nanofluidic devices. We developed an accessible, gentle, and solution-based photodirected surface metallization approach well-suited to forming patterned metal films as integral structural and functional features in thin-membrane-based SiNx devices-for use as electrodes or surface chemical functionalization platforms, for example-augmenting existing device capabilities and properties for a wide range of applications.

  8. Deposition of silicon oxynitride films by low energy ion beam assisted nitridation at room temperature

    NASA Astrophysics Data System (ADS)

    Youroukov, S.; Kitova, S.; Danev, G.

    2008-05-01

    The possibility is studied of growing thin silicon oxynitride films by e-gun evaporation of SiO and SiO2 together with concurrent bombardment with low energy N2+ ions from a cyclotron resonance (ECR) source at room temperature of substrates. The degree of nitridation and oxidation of the films is investigated by means of X-ray spectroscopy. The optical characteristics of the films, their environmental stability and adhesion to different substrates are examined. The results obtained show than the films deposited are transparent. It is found that in the case of SiO evaporation with concurrent N2+ ion bombardment, reactive implantation of nitrogen within the films takes place at room temperature of the substrate with the formation of a new silicon oxynitride compound even at low ion energy (150-200 eV).

  9. Harnessing second-order optical nonlinearities at interfaces in multilayer silicon-oxy-nitride waveguides

    NASA Astrophysics Data System (ADS)

    Logan, Dylan F.; Alamin Dow, Ali B.; Stepanov, Dmitri; Abolghasem, Payam; Kherani, Nazir P.; Helmy, Amr S.

    2013-02-01

    We demonstrate multi-layer silicon-oxy-nitride (SiON) waveguides as a platform for broadband tunable phase-matching of second-order nonlinear interactions arising at material interfaces. Second-harmonic generation (SHG) is measured with a 2 ps pulsed pump of 1515-1535 nm wavelength, where 6 nW power is generated by an average pump power of 30 mW in a 0.92 mm long device. The wavelength acceptance bandwidth of the SHG is as broad as 20 nm due to the low material dispersion of SiON waveguides. The waveguide structure provides a viable method for utilizing second order nonlinearity for light generation and manipulation in silicon photonic circuits.

  10. Effect of the hexagonal phase interlayer on rectification properties of boron nitride heterojunctions to silicon

    SciTech Connect

    Teii, K. Ito, H.; Katayama, N.; Matsumoto, S.

    2015-02-07

    Rectification properties of boron nitride/silicon p-n heterojunction diodes fabricated under low-energy ion impact by plasma-enhanced chemical vapor deposition are studied in terms of the resistive sp{sup 2}-bonded boron nitride (sp{sup 2}BN) interlayer. A two-step biasing technique is developed to control the fraction of cubic boron nitride (cBN) phase and, hence, the thickness of the sp{sup 2}BN interlayer in the films. The rectification ratio at room temperature is increased up to the order of 10{sup 4} at ±10 V of biasing with increasing the sp{sup 2}BN thickness up to around 130 nm due to suppression of the reverse leakage current. The variation of the ideality factor in the low bias region is related to the interface disorders and defects, not to the sp{sup 2}BN thickness. The forward current follows the Frenkel-Poole emission model in the sp{sup 2}BN interlayer at relatively high fields when the anomalous effect is assumed. The transport of the minority carriers for reverse current is strongly limited by the high bulk resistance of the thick sp{sup 2}BN interlayer, while that of the major carriers for forward current is much less affected.

  11. Effects of post-deposition argon implantation on the memory properties of plasma-deposited silicon nitride films

    NASA Astrophysics Data System (ADS)

    Shams, Q. A.; Brown, W. D.

    1989-10-01

    Post-deposition ion implantation has been used to introduce argon into plasma-enhanced chemically vapor deposited silicon nitride films in an attempt to influence the transfer, trapping, and emission of charge during write/erase exercising of the metal-silicon nitride-silicon oxide-silicon structure. Argon was implanted into the SiH4 -NH3 -N2 deposited films at energies ranging from 25 to 75 keV, current densities ranging from 0.1 to 75 μA/cm2 and fluences ranging from 1×1012 to 1×1016 ions/cm2. Physical properties of the films were studied by ellipsometry and infrared spectroscopy, while high frequency capacitance-voltage (C-V) curves were used to obtain programming, retention, and endurance characteristics.

  12. Synthesis of Silicon Nitride and Silicon Carbide Nanocomposites through High Energy Milling of Waste Silica Fume for Structural Applications

    NASA Astrophysics Data System (ADS)

    Suri, Jyothi

    Nanocomposites have been widely used in a multitude of applications in electronics and structural components because of their improved mechanical, electrical, and magnetic properties. Silicon nitride/Silicon carbide (Si 3N4/SiC) nanocomposites have been studied intensively for low and high temperature structural applications, such as turbine and automobile engine components, ball bearings, turbochargers, as well as energy applications due to their superior wear resistance, high temperature strength, high oxidation resistance and good creep resistance. Silica fume is the waste material produced during the manufacture of silicon and ferro-silicon alloys, and contains 94 to 97 wt.% SiO2. In the present dissertation, the feasibility of using waste silica fume as the raw material was investigated to synthesize (I) advanced nanocomposites of Si3N4/SiC, and (2) porous silicon carbide (SiC) for membrane applications. The processing approach used to convert the waste material to advanced ceramic materials was based on a novel process called, integrated mechanical and thermal activation process (IMTA) process. In the first part of the dissertation, the effect of parameters such as carbothermic nitridation and reduction temperature and the graphite concentration in the starting silica fume plus graphite mixture, were explored to synthesize nanocomposite powders with tailored amounts of Si3N4 and SiC phases. An effective way to synthesize carbon-free Si3N 4/SiC composite powders was studied to provide a clear pathway and fundamental understanding of the reaction mechanisms. Si3N4/SiC nanocomposite powders were then sintered using two different approaches, based on liquid phase sintering and spark plasma sintering processes, with Al 2O3 and Y2O3 as the sintering aids. The nanocomposites were investigated for their densification behavior, microstructure, and mechanical properties. Si3N4/SiC nanocomposites thus obtained were found to possess superior mechanical properties at much

  13. DNA-functionalized silicon nitride nanopores for sequence-specific recognition of DNA biosensor

    NASA Astrophysics Data System (ADS)

    Tan, Shengwei; Wang, Lei; Yu, Jingjing; Hou, Chuanrong; Jiang, Rui; Li, Yanping; Liu, Quanjun

    2015-05-01

    Nanopores have been proven to be novel and versatile single-molecule sensors for individual unlabeled biopolymer detection and characterization. In the present study, a relatively large silicon nitride (Si3N4) nanopore with a diameter of approximately 60 nm was fabricated successfully using a focused Ga ion beam (FIB). We demonstrated a simple ex situ silanization procedure to control the size and functionality of solid-state nanopores. The presented results show that by varying the silanization time, it is possible to adjust the efficiency of probe molecule attachment, thus shrinking the pore to the chosen size, while introducing selective sensing probes. The functionalization of nanopores was verified by analysis of field-emission scanning electron microscopy (FESEM), energy-dispersive X-ray spectroscopy (EDS), and electrical measurements. Based on this study, we envision that the functionalized silicon nitride nanopores with the DNA probe might provide a biosensing platform for the detection and discrimination of a short single-stranded DNA oligomer of unknown sequences in the future.

  14. Friction and wear of plasma-deposited amorphous hydrogenated films on silicon nitride

    NASA Technical Reports Server (NTRS)

    Miyoshi, Kazuhisa

    1991-01-01

    An investigation was conducted to examine the friction and wear behavior of amorphous hydrogenated carbon (a-C:H) films in sliding contact with silicon nitride pins in both dry nitrogen and humid air environments. Amorphous hydrogenated carbon films approximately 0.06 micron thick were deposited on silicon nitride flat substrates by using the 30 kHz ac glow discharge of a planar plasma reactor. The results indicate that an increase in plasma deposition power gives an increase in film density and hardness. The high-density a-C:H films deposited behaved tribologically much like bulk diamond. In the dry nitrogen environment, a tribochemical reaction produced a substance, probably a hydrocarbon-rich layer, that decreased the coefficient of friction. In the humid air environment, tribochemical interactions drastically reduced the wear life of a-C:H films and water vapor greatly increased the friction. Even in humid air, effective lubrication is possible with vacuum-annealed a-C:H films. The vacuum-annealed high-density a-C:H film formed an outermost superficial graphitic layer, which behaved like graphite, on the bulk a-C:H film. Like graphite, the annealed a-C:H film with the superficial graphitic layer showed low friction when adsorbed water vapor was present.

  15. Thickness limitations in carbon nanotube reinforced silicon nitride coatings synthesized by vapor infiltration

    SciTech Connect

    Eres, Gyula

    2012-01-01

    Chemical vapor infiltration is a convenient method for synthesizing carbon nanotube (CNT)-reinforced ceramic coatings. The thickness over which infiltration is relatively uniform is limited by gas phase diffusion in the pore structure. These effects were investigated in two types of silicon nitride matrix composites. With CNTs that were distributed uniformly on the substrate surface dense coatings were limited to thicknesses of several microns. With dual structured CNT arrays produced by photolithography coatings up to 400 gm thick were obtained with minimal residual porosity. Gas transport into these dual structured materials was facilitated by creating micron sized channels between "CNT pillars" (i.e. each pillar consisted of a large number of individual CNTs). The experimental results are consistent with basic comparisons between the rates of gas diffusion and silicon nitride growth in porous structures. This analysis also provides a general insight into optimizing infiltration conditions during the fabrication of thick CNT-reinforced composite coatings. (C) 2012 Acta Materialia Inc. Published by Elsevier Ltd. All rights reserved.

  16. Effect of W and WC on the oxidation resistance of yttria-doped silicon nitride

    NASA Technical Reports Server (NTRS)

    Schuon, S.

    1980-01-01

    The effect of tungsten and tungsten carbide contamination on the oxidation and cracking in air of yttria-doped silicon nitride ceramics is investigated. Silicon nitride powder containing 8 wt % Y2O3 was doped with 2 wt % W, 4 wt % W, 2 wt % WC or left undoped, and sintered in order to simulate contamination during milling, and specimens were exposed in air to 500, 750 and 1350 C for various lengths of time. Scanning electron and optical microscopy and X-ray diffraction of the specimens in the as-sintered state reveals that the addition of W or WC does not affect the phase relationships in the system, composed of alpha and beta Si3N4, melilite and an amorphous phase. Catastrophic oxidation is observed at 750 C in specimens containing 2 and 4 wt % W, accompanied by the disappearance of alpha Si3N4 and melilite from the structure. At 1350 C, the formation of a protective glassy oxide layer was observed on all specimens without catastrophic oxidation, and it is found that pre-oxidation at 1350 C also improved the oxidation resistance at 750 C of bars doped with 4 wt % W. It is suggested that tungsten contamination from WC grinding balls may be the major cause of the intermediate-temperature cracking and instability frequently observed in Si3N4-8Y2O3.

  17. DNA-functionalized silicon nitride nanopores for sequence-specific recognition of DNA biosensor.

    PubMed

    Tan, Shengwei; Wang, Lei; Yu, Jingjing; Hou, Chuanrong; Jiang, Rui; Li, Yanping; Liu, Quanjun

    2015-01-01

    Nanopores have been proven to be novel and versatile single-molecule sensors for individual unlabeled biopolymer detection and characterization. In the present study, a relatively large silicon nitride (Si3N4) nanopore with a diameter of approximately 60 nm was fabricated successfully using a focused Ga ion beam (FIB). We demonstrated a simple ex situ silanization procedure to control the size and functionality of solid-state nanopores. The presented results show that by varying the silanization time, it is possible to adjust the efficiency of probe molecule attachment, thus shrinking the pore to the chosen size, while introducing selective sensing probes. The functionalization of nanopores was verified by analysis of field-emission scanning electron microscopy (FESEM), energy-dispersive X-ray spectroscopy (EDS), and electrical measurements. Based on this study, we envision that the functionalized silicon nitride nanopores with the DNA probe might provide a biosensing platform for the detection and discrimination of a short single-stranded DNA oligomer of unknown sequences in the future.

  18. Formation of boron nitride coatings on silicon carbide fibers using trimethylborate vapor

    NASA Astrophysics Data System (ADS)

    Yuan, Mengjiao; Zhou, Tong; He, Jing; Chen, Lifu

    2016-09-01

    High quality boron nitride (BN) coatings have been grown on silicon carbide (SiC) fibers by carbothermal nitridation and at atmospheric pressure. SiC fibers were first treated in chlorine gas to form CDC (carbide-derived carbon) film on the fiber surface. The CDC-coated SiC fibers were then reacted with trimethylborate vapor and ammonia vapor at high temperature, forming BN coatings by carbothermal reduction. The FT-IR, XPS, XRD, SEM, TEM and AES were used to investigate the formation of the obtained coatings. It has been found that the obtained coatings are composed of phase mixture of h-BN and amorphous carbon, very uniform in thickness, have smooth surface and adhere well with the SiC fiber substrates. The BN-coated SiC fibers retain ∼80% strength of the as-received SiC fibers and show an obvious interfacial debonding and fiber pullout in the SiCf/SiOC composites. This method may be useful for the large scale production of high quality BN coating on silicon carbide fiber.

  19. Effect of Silicon Nitride Balls and Rollers on Rolling Bearing Life

    NASA Technical Reports Server (NTRS)

    Zaretsky, Erwin V.; Vlcek, Brian L.; Hendricks, Robert C.

    2005-01-01

    Three decades have passed since the introduction of silicon nitride rollers and balls into conventional rolling-element bearings. For a given applied load, the contact (Hertz) stress in a hybrid bearing will be higher than an all-steel rolling-element bearing. The silicon nitride rolling-element life as well as the lives of the steel races were used to determine the resultant bearing life of both hybrid and all-steel bearings. Life factors were determined and reported for hybrid bearings. Under nominal operating speeds, the resultant calculated lives of the deep-groove, angular-contact, and cylindrical roller hybrid bearings with races made of post-1960 bearing steel increased by factors of 3.7, 3.2, and 5.5, respectively, from those calculated using the Lundberg-Palmgren equations. An all-steel bearing under the same load will have a longer life than the equivalent hybrid bearing under the same conditions. Under these conditions, hybrid bearings are predicted to have a lower fatigue life than all-steel bearings by 58 percent for deep-groove bearings, 41 percent for angular-contact bearings, and 28 percent for cylindrical roller bearings.

  20. Contact-pressure reduction of pyramidal optical probe array on corrugated aluminium/silicon nitride membranes

    NASA Astrophysics Data System (ADS)

    Jang, Jinhee; Oh, Seonghyeon; Hahn, Jae W.

    2017-04-01

    In this study, we develop an optical contact probe array for scanning near-field lithography. We fabricate the optical probes with a pyramidal tip array on an aluminium/silicon nitride composite membrane. Here, we reduce the contact pressure using the corrugations on the silicon nitride membrane and the flattened surface on top of the tip. After fabricating the 5  ×  5 probes in the array, we evaluate the contact pressure using the force–distance curve obtained by an atomic force microscope. The spring constants of the corrugated membranes are 10  ±  0.6 N m‑1. The contact pressure on a flattened 295 nm in-radius is calculated to be approximately 33 MPa for a 300 nm deflection. This value is 22 times smaller than that of a sharp pyramidal tip of 20 nm in-radius on a flat membrane.

  1. Electron transport and dielectric breakdown in silicon nitride using a charge transport model

    NASA Astrophysics Data System (ADS)

    Ogden, Sean P.; Lu, Toh-Ming; Plawsky, Joel L.

    2016-10-01

    Silicon nitride is an important material used in the electronics industry. As such, the electronic transport and reliability of these materials are important to study and understand. We report on a charge transport model to predict leakage current and failure trends based on previously published data for a stoichiometric silicon nitride dielectric. Failure occurs when the defect density increases to a critical value of approximately 6 × 1025 traps/m3. The model's parameters are determined using voltage ramp data only, and yet, the model is also able to predict constant voltage stress failure over a time scale ranging from minutes to months. The successful fit of the model to the experimental data validates our assumption that the dominant defect in the dielectric is the Si dangling bond, located approximately 2.2 eV below the conduction band. A comparison with previous SiCOH simulations shows SiN and SiCOH have similar defect-related material properties. It is also speculated that, based on the estimated parameter values of 2.75 eV for the defect formation activation energy, the materials' TDDB wear-out are caused by broken Si-H bonds, resulting in Si dangling bond defects.

  2. A mathematical model and simulation results of plasma enhanced chemical vapor deposition of silicon nitride films

    NASA Astrophysics Data System (ADS)

    Konakov, S. A.; Krzhizhanovskaya, V. V.

    2015-01-01

    We developed a mathematical model of Plasma Enhanced Chemical Vapor Deposition (PECVD) of silicon nitride thin films from SiH4-NH3-N2-Ar mixture, an important application in modern materials science. Our multiphysics model describes gas dynamics, chemical physics, plasma physics and electrodynamics. The PECVD technology is inherently multiscale, from macroscale processes in the chemical reactor to atomic-scale surface chemistry. Our macroscale model is based on Navier-Stokes equations for a transient laminar flow of a compressible chemically reacting gas mixture, together with the mass transfer and energy balance equations, Poisson equation for electric potential, electrons and ions balance equations. The chemical kinetics model includes 24 species and 58 reactions: 37 in the gas phase and 21 on the surface. A deposition model consists of three stages: adsorption to the surface, diffusion along the surface and embedding of products into the substrate. A new model has been validated on experimental results obtained with the "Plasmalab System 100" reactor. We present the mathematical model and simulation results investigating the influence of flow rate and source gas proportion on silicon nitride film growth rate and chemical composition.

  3. Review of corrosion behavior of ceramic heat exchanger materals: Corrosion characteristics of silicon carbide and silicon nitride. Final report, September 11, 1992--March 11, 1993

    SciTech Connect

    Munro, R.G.; Dapkunas, S.J.

    1993-09-01

    The present work is a review of the substantial effort that has been made to measure and understand the effects of corrosion with respect to the properties, performance, and durability of various forms of silicon carbide and silicon nitride. The review encompasses corrosion in diverse environments, usually at temperatures of 1000C or higher. The environments include dry and moist oxygen, mixtures of hot gaseous vapors, molten salts, molten metals, and complex environments pertaining to coal ashes and slags.

  4. Analytical and experimental evaluation of joining silicon nitride to metal and silicon carbide to metal for advanced heat engine applications

    SciTech Connect

    Kang, S.; Selverian, J.H.; Kim, H.; O'Niel, D.; Kim, K. )

    1990-04-01

    This report summarizes the results of Phase I of Analytical and Experimental Evaluation of Joining Silicon Nitride to Metal and Silicon Carbide to Metal and Silicon Carbide to Metal for Advanced Heat Engine Applications. A general methodology was developed to optimize the joint geometry and material systems for 650 and 950{degree}C applications. Failure criteria were derived to predict the fracture of the braze and ceramic. Extensive finite element analyses (FEA), using ABAQUS code, were performed to examine various joint geometries and to evaluate the affect of different interlayers on the residual stress state. Also, material systems composed of coating materials, interlayers, and braze alloys were developed for the program based on the chemical stability and strength of the joints during processing and service. Finally, the FEA results were compared with experiments using an idealized strength relationship. The results showed that the measured strength of the joint reached 30--90% of the strength by predicted by FEA. Overall results demonstrated that FEA is an effective tool for designing the geometries of ceramic-metal joints and that joining by brazing is a relevant method for advanced heat engine applications. 33 refs., 54 figs., 36 tabs.

  5. Recombination and thin film properties of silicon nitride and amorphous silicon passivated c-Si following ammonia plasma exposure

    SciTech Connect

    Wan, Yimao; Thomson, Andrew F.; Cuevas, Andres; McIntosh, Keith R.

    2015-01-26

    Recombination at silicon nitride (SiN{sub x}) and amorphous silicon (a-Si) passivated crystalline silicon (c-Si) surfaces is shown to increase significantly following an ammonia (NH{sub 3}) plasma exposure at room temperature. The effect of plasma exposure on chemical structure, refractive index, permittivity, and electronic properties of the thin films is also investigated. It is found that the NH{sub 3} plasma exposure causes (i) an increase in the density of Si≡N{sub 3} groups in both SiN{sub x} and a-Si films, (ii) a reduction in refractive index and permittivity, (iii) an increase in the density of defects at the SiN{sub x}/c-Si interface, and (iv) a reduction in the density of positive charge in SiN{sub x}. The changes in recombination and thin film properties are likely due to an insertion of N–H radicals into the bulk of SiN{sub x} or a-Si. It is therefore important for device performance to minimize NH{sub 3} plasma exposure of SiN{sub x} or a-Si passivating films during subsequent fabrication steps.

  6. Study on the influence of the magnetron power supply on the properties of the Silicon Nitride films

    NASA Astrophysics Data System (ADS)

    Kiseleva, D. V.; Yurjev, Y. N.; Petrakov, Y. V.; Sidelev, D. V.; Korzhenko, D. V.; Erofeev, E. V.

    2017-01-01

    Silicon nitride (Si3N4) films were deposited by magnetron sputtering of silicon target in (Ar+N2) atmosphere with refractive index 1.95 - 2.05. The results of Fourier transform infrared (FTIR) spectrophotometry showed Si-N bonds in the thin films with concentration 2.41·1023 – 3.48·1023 cm-3. Dependences of deposition rate, optical characteristics and surface morphology on rate of N2 flow and properties of magnetron power supply.

  7. Demonstration of a silicon nitride attrition mill for production of fine pure Si and Si3N4 powders

    NASA Technical Reports Server (NTRS)

    Herbell, T. P.; Glasgow, T. K.; Orth, N. W.

    1984-01-01

    To avoid metallic impurities normally introduced by milling ceramic powders in conventional steel hardware, an attrition mill (high-energy stirred ball mill) was constructed with the wearing parts (mill body, stirring arms, and media) made from silicon nitride. Commercial silicon and Si3N4 powders were milled to fine uniform particles with only minimal contamination - primarily from wear of the sintered Si3N4 media.

  8. Fabrication and configuration development of silicon nitride sub-wavelength structures for solar cell application.

    PubMed

    Sahoo, Kartika Chandra; Chang, Edward Yi; Li, Yiming; Lin, Men-Ku; Huang, Jin-Hua

    2010-09-01

    To replace the double layer antireflection coating and improve the efficiency of solar cell, a self assembled nickel nano particle mask followed by inductively coupled plasma (ICP) ion etching method is proposed to form the sub-wavelength structures (SWS) on silicon nitride (Si3N4) antireflection coating layers instead of semiconductor layer. The size and density of nickel nano particles can be controlled by the initial thickness of nickel film that is annealed to form the nano-particles on the Si3N4 film deposited on the silicon substrate. ICP etching time is responsible for controlling the height of the fabricated Si3N4 SWS on silicon substrate, which is seen from our experiment. It is found that the lowest average reflectivity of 3.12% for wavelength ranging from 350 to 1000 nm is achieved when the diameter and height of the SWS are 120-180 nm and 150-160 nm, respectively. A low reflectance below 1% is observed over the wavelength from 590 to 680 nm for the fabricated Si3N4 SWS on silicon subs. The efficiency of Si3N4 SWS could be improved by 1.31%, compared with the single layer anti-reflection (SLAR) coatings of Si3N4, using PC1D program. The results of this study may benefit the fabrication of solar cells.

  9. Alternative process for thin layer etching: Application to nitride spacer etching stopping on silicon germanium

    SciTech Connect

    Posseme, N. Pollet, O.; Barnola, S.

    2014-08-04

    Silicon nitride spacer etching realization is considered today as one of the most challenging of the etch process for the new devices realization. For this step, the atomic etch precision to stop on silicon or silicon germanium with a perfect anisotropy (no foot formation) is required. The situation is that none of the current plasma technologies can meet all these requirements. To overcome these issues and meet the highly complex requirements imposed by device fabrication processes, we recently proposed an alternative etching process to the current plasma etch chemistries. This process is based on thin film modification by light ions implantation followed by a selective removal of the modified layer with respect to the non-modified material. In this Letter, we demonstrate the benefit of this alternative etch method in term of film damage control (silicon germanium recess obtained is less than 6 A), anisotropy (no foot formation), and its compatibility with other integration steps like epitaxial. The etch mechanisms of this approach are also addressed.

  10. Formation of Mach angle profiles during wet etching of silica and silicon nitride materials

    NASA Astrophysics Data System (ADS)

    Ghulinyan, M.; Bernard, M.; Bartali, R.; Pucker, G.

    2015-12-01

    In integrated circuit technology peeling of masking photoresist films is a major drawback during the long-timed wet etching of materials. It causes an undesired film underetching, which is often accompanied by a formation of complex etch profiles. Here we report on a detailed study of wedge-shaped profile formation in a series of silicon oxide, silicon oxynitride and silicon nitride materials during wet etching in a buffered hydrofluoric acid (BHF) solution. The shape of etched profiles reflects the time-dependent adhesion properties of the photoresist to a particular material and can be perfectly circular, purely linear or a combination of both, separated by a knee feature. Starting from a formal analogy between the sonic boom propagation and the wet underetching process, we model the wedge formation mechanism analytically. This model predicts the final form of the profile as a function of time and fits the experimental data perfectly. We discuss how this knowledge can be extended to the design and the realization of optical components such as highly efficient etch-less vertical tapers for passive silicon photonics.

  11. Laser doping and metallization of wide bandgap materials: silicon carbide, gallium nitride, and aluminum nitride

    NASA Astrophysics Data System (ADS)

    Salama, Islam Abdel Haleem

    A laser direct write and doping (LDWD) system is designed and utilized for direct metallization and selective area doping in different SiC polytypes, GaN and in dielectrics including AlN. Laser direct metallization in 4H- and 6H-SiC generates metal-like conductive phases that are produced as both rectifying and ohmic contacts without metal deposition. Nd:YAG (lambda = 532, 1064 nm) nanosecond pulsed laser irradiation in SiC induces carbon-rich conductive phases by thermal decomposition of SiC while UV excimer (lambda = 193 nm) laser irradiation produces a silicon-rich phase due to selective carbon photoablation. Linear transmission line method (TLM) pattern is directly fabricated in single crystals SiC by pulsed laser irradiation allowing characterization of the laser fabricated metal-like contacts. Activation of a self focusing effect at the frequency doubled Nd:YAG laser irradiation (lambda = 532 nm) allows to fabricate buried metal like contacts in SiC wafers while maintaining their device-ready surface condition. Gas immersion laser doping (GILD) and laser doping from a molten precursor are utilized to dope both GaN and SiC. Trimethylaluminum (TMAl) and nitrogen are the precursors used to produce p-type and n-type doped SiC; respectively. Nd:YAG and excimer laser nitrogen doping in SiC epilayer and single crystal substrates increases the dopant concentration by two orders of magnitude and produces both deep (500--600 nm) and shallow (50 nm) junctions, respectively. Laser assisted effusion/diffusion is introduced and utilized to dope Al in SiC wafers. Using this technique, a150 nm p-type doped junction is fabricated in semi-insulating 6H- and n-type doped 4H-SiC wafers. Laser-induced p-type doping of Mg in single crystal GaN is conducted using Bis-magnesium dihydrate [Mg(TMHD)2]. Mg concentration and penetration depth up to 10 20--1021 cm-3 and 5mum, respectively are achieved using various laser doping techniques. Laser direct writing and doping (LDWD) is a

  12. Evaluation of silicon nitride as a substrate for culture of PC12 cells: an interfacial model for functional studies in neurons.

    PubMed

    Medina Benavente, Johan Jaime; Mogami, Hideo; Sakurai, Takashi; Sawada, Kazuaki

    2014-01-01

    Silicon nitride is a biocompatible material that is currently used as an interfacial surface between cells and large-scale integration devices incorporating ion-sensitive field-effect transistor technology. Here, we investigated whether a poly-L-lysine coated silicon nitride surface is suitable for the culture of PC12 cells, which are widely used as a model for neural differentiation, and we characterized their interaction based on cell behavior when seeded on the tested material. The coated surface was first examined in terms of wettability and topography using contact angle measurements and atomic force microscopy and then, conditioned silicon nitride surface was used as the substrate for the study of PC12 cell culture properties. We found that coating silicon nitride with poly-L-lysine increased surface hydrophilicity and that exposing this coated surface to an extracellular aqueous environment gradually decreased its roughness. When PC12 cells were cultured on a coated silicon nitride surface, adhesion and spreading were facilitated, and the cells showed enhanced morphological differentiation compared to those cultured on a plastic culture dish. A bromodeoxyuridine assay demonstrated that, on the coated silicon nitride surface, higher proportions of cells left the cell cycle, remained in a quiescent state and had longer survival times. Therefore, our study of the interaction of the silicon nitride surface with PC12 cells provides important information for the production of devices that need to have optimal cell culture-supporting properties in order to be used in the study of neuronal functions.

  13. A new model for the discharge behaviour of metal-nitride-oxide-silicon (MNOS) non-volatile memory devices

    NASA Astrophysics Data System (ADS)

    Heyns, Guido L.; Maes, Herman E.

    1987-10-01

    A new model is presented for the discharge mechanism of MNOS memory devices. For moderate and large charge contents the discharging effect can actually be ascribed to the compensation of the stored charge by the injection from the silicon into the nitride of carriers of the opposite type.

  14. Fabrication of a full-size EUV pellicle based on silicon nitride

    NASA Astrophysics Data System (ADS)

    Goldfarb, Dario L.

    2015-10-01

    In this paper, the fabrication and initial characterization of an unsupported membrane composed of a single ultrathin silicon nitride (SiNx) layer with potential application as a EUV pellicle is described in detail. A full size free-standing pellicle with inner film area equal to 113x145mm and champion EUV transparency equal to 89.5% (single pass) is demonstrated utilizing the methodology presented in this study. The exemplary EUV transparency of the reported pellicle was achieved by limiting the membrane thickness to 16nm, while the intrinsic mechanical stability for the silicon nitride film was realized by adjusting the Si:N ratio to provide a non-stoichiometric layer featuring low tensile stress. The pellicle thickness, elemental composition and mass density were used to calculate the expected EUV transparency, which was found to be in good agreement with experimental EUV transmission measurements. Additionally, careful consideration was given to process-induced mechanical instabilities exerted on the ultrathin pellicle during the wet etch, rinsing and drying fabrication steps, and a unique yet simple set of ancillary hardware, materials and processing techniques was introduced to minimize such disturbances and yield large-area pellicles that are free of visible defects and wrinkles. In the absence of commercially available actinic inspection tools, a distinctive advantage of the SiNx membrane versus a Silicon-based EUV pellicle solution is the demonstrated ArF transmission, making it attractive for through-pellicle mask defect inspection and advanced metrology work utilizing available 193nm excimer laser and detection systems. A preliminary heat load test indicates that the SiNx-based EUV pellicle would be marginally compatible with an equivalent 80W EUV source.

  15. Surface etching, chemical modification and characterization of silicon nitride and silicon oxide--selective functionalization of Si3N4 and SiO2.

    PubMed

    Liu, Li-Hong; Michalak, David J; Chopra, Tatiana P; Pujari, Sidharam P; Cabrera, Wilfredo; Dick, Don; Veyan, Jean-François; Hourani, Rami; Halls, Mathew D; Zuilhof, Han; Chabal, Yves J

    2016-03-09

    The ability to selectively chemically functionalize silicon nitride (Si3N4) or silicon dioxide (SiO2) surfaces after cleaning would open interesting technological applications. In order to achieve this goal, the chemical composition of surfaces needs to be carefully characterized so that target chemical reactions can proceed on only one surface at a time. While wet-chemically cleaned silicon dioxide surfaces have been shown to be terminated with surficial Si-OH sites, chemical composition of the HF-etched silicon nitride surfaces is more controversial. In this work, we removed the native oxide under various aqueous HF-etching conditions and studied the chemical nature of the resulting Si3N4 surfaces using infrared absorption spectroscopy (IRAS), x-ray photoelectron spectroscopy (XPS), low energy ion scattering (LEIS), and contact angle measurements. We find that HF-etched silicon nitride surfaces are terminated by surficial Si-F and Si-OH bonds, with slightly subsurface Si-OH, Si-O-Si, and Si-NH2 groups. The concentration of surficial Si-F sites is not dependent on HF concentration, but the distribution of oxygen and Si-NH2 displays a weak dependence. The Si-OH groups of the etched nitride surface are shown to react in a similar manner to the Si-OH sites on SiO2, and therefore no selectivity was found. Chemical selectivity was, however, demonstrated by first reacting the -NH2 groups on the etched nitride surface with aldehyde molecules, which do not react with the Si-OH sites on a SiO2 surface, and then using trichloro-organosilanes for selective reaction only on the SiO2 surface (no reactivity on the aldehyde-terminated Si3N4 surface).

  16. Surface etching, chemical modification and characterization of silicon nitride and silicon oxide—selective functionalization of Si3N4 and SiO2

    NASA Astrophysics Data System (ADS)

    Liu, Li-Hong; Michalak, David J.; Chopra, Tatiana P.; Pujari, Sidharam P.; Cabrera, Wilfredo; Dick, Don; Veyan, Jean-François; Hourani, Rami; Halls, Mathew D.; Zuilhof, Han; Chabal, Yves J.

    2016-03-01

    The ability to selectively chemically functionalize silicon nitride (Si3N4) or silicon dioxide (SiO2) surfaces after cleaning would open interesting technological applications. In order to achieve this goal, the chemical composition of surfaces needs to be carefully characterized so that target chemical reactions can proceed on only one surface at a time. While wet-chemically cleaned silicon dioxide surfaces have been shown to be terminated with surficial Si-OH sites, chemical composition of the HF-etched silicon nitride surfaces is more controversial. In this work, we removed the native oxide under various aqueous HF-etching conditions and studied the chemical nature of the resulting Si3N4 surfaces using infrared absorption spectroscopy (IRAS), x-ray photoelectron spectroscopy (XPS), low energy ion scattering (LEIS), and contact angle measurements. We find that HF-etched silicon nitride surfaces are terminated by surficial Si-F and Si-OH bonds, with slightly subsurface Si-OH, Si-O-Si, and Si-NH2 groups. The concentration of surficial Si-F sites is not dependent on HF concentration, but the distribution of oxygen and Si-NH2 displays a weak dependence. The Si-OH groups of the etched nitride surface are shown to react in a similar manner to the Si-OH sites on SiO2, and therefore no selectivity was found. Chemical selectivity was, however, demonstrated by first reacting the -NH2 groups on the etched nitride surface with aldehyde molecules, which do not react with the Si-OH sites on a SiO2 surface, and then using trichloro-organosilanes for selective reaction only on the SiO2 surface (no reactivity on the aldehyde-terminated Si3N4 surface).

  17. The electroluminescence mechanism of Er³⁺ in different silicon oxide and silicon nitride environments

    SciTech Connect

    Rebohle, L. Wutzler, R.; Braun, M.; Helm, M.; Skorupa, W.; Berencén, Y.; Ramírez, J. M.; Garrido, B.; Hiller, D.

    2014-09-28

    Rare earth doped metal-oxide-semiconductor (MOS) structures are of great interest for Si-based light emission. However, several physical limitations make it difficult to achieve the performance of light emitters based on compound semiconductors. To address this point, in this work the electroluminescence (EL) excitation and quenching mechanism of Er-implanted MOS structures with different designs of the dielectric stack are investigated. The devices usually consist of an injection layer made of SiO₂ and an Er-implanted layer made of SiO₂, Si-rich SiO₂, silicon nitride, or Si-rich silicon nitride. All structures implanted with Er show intense EL around 1540 nm with EL power efficiencies in the order of 2 × 10⁻³ (for SiO₂:Er) or 2 × 10⁻⁴(all other matrices) for lower current densities. The EL is excited by the impact of hot electrons with an excitation cross section in the range of 0.5–1.5 × 10⁻¹⁵cm⁻². Whereas the fraction of potentially excitable Er ions in SiO₂ can reach values up to 50%, five times lower values were observed for other matrices. The decrease of the EL decay time for devices with Si-rich SiO₂ or Si nitride compared to SiO₂ as host matrix implies an increase of the number of defects adding additional non-radiative de-excitation paths for Er³⁺. For all investigated devices, EL quenching cross sections in the 10⁻²⁰ cm² range and charge-to-breakdown values in the range of 1–10 C cm⁻² were measured. For the present design with a SiO₂ acceleration layer, thickness reduction and the use of different host matrices did not improve the EL power efficiency or the operation lifetime, but strongly lowered the operation voltage needed to achieve intense EL.

  18. Investigation of Oxygen and Hydrogen Associated Charge Trapping and Electrical Characteristics of Silicon Nitride Films for Mnos Devices.

    NASA Astrophysics Data System (ADS)

    Xu, Dan

    Silicon nitride (Si_3N _4) and silicon oxynitride (SiO _{rm x}N_ {rm y}) films in the form of metal -nitride-oxide-silicon (MNOS) structures were investigated to determine the correlation between their electrical characteristics and the nature of the chemical bonding so as to provide guidelines for the next generation of nonvolatile memory devices. The photoionization cross section of electron traps in the oxynitride films of MNOS devices were also measured as a function photon energy and oxygen concentration of the silicon oxynitride films. An effective photoionization cross section associated with electron traps was determined to be between 4.9 times 10 ^{-19} cm^2 to 10.8 times 10^ {-19} cm^2 over the photon energy of 2.06 eV to 3.1 eV for silicon oxynitride films containing 7 atomic % to 17 atomic % of oxygen. The interface state density of metal-nitride-oxide -silicon (MNOS) devices was investigated as a function of processing conditions. The interface state density around the midgap of the oxide-silicon interface of the MNOS structures for deposition temperature between 650^ circC to 850^circC increased from 1.1 to 8.2 times 10 ^{11} cm^ {-2}eV^{-1}, for as-deposited silicon nitride films; but decreased from 5.0 to 3.5 times 10^ {11} cm^{-2} eV^{-1}, for films annealed in nitrogen at 900^circC for 60 minutes; and further decreased and remained constant at 1.5 times 10^{11 } cm^{-2}eV ^{-1}, for films which were further annealed in hydrogen at 900^ circC for an additional 60 minutes. The interface state density increase was due to an increase in the loss of hydrogen at the interfacial region and also due to an increase in the thermal stress caused by differences in thermal expansion coefficients of silicon nitride and silicon dioxide films at higher deposition temperatures. The interface state density was subject to two opposing influences; an increase by thermal stress, and a reduction by hydrogen compensation of these states. The photocurrent-voltage (photo

  19. Thermal transport in silicon nitride membranes and far infrared studies of novel materials

    NASA Astrophysics Data System (ADS)

    Holmes, Warren Albert

    The central theme of this thesis is the design and use of bolometers for detection of far infrared and submillimeter wavelength radiation. A new material, micrometer thick membranes of silicon nitride, is used in modern bolometer designs. An understanding of thermal transport in silicon nitride is critical to evaluate and optimize detector performance. We have measured the thermal conductance, G, of {≈}1μm thick low-stress silicon nitride membranes over the temperature range, 0.06 4K,\\ G is independent of surface morphology indicating that the thermal transport is determined by bulk scattering. For T < 4K, scattering from membrane surfaces becomes significant. We find that G is reduced by a factor as large as 5 for membranes which have sub-micron sized Ag particles glued to the surface or are micromachined into narrow strips as are required in many applications when compared with that of clean, solid membranes with the same ratio of cross section to length. We have used optimized bolometers for the study of two novel materials, single walled carbon nanotubes (SWNT) and single crystals of high temperature superconductors. We have measured the transmittance of several samples of bundles of SWNT over the frequency range 10 < nu < 300cmsp{-1} at temperatures 1.2 < T < 300K. The broadband shape of the transmittance has a temperature dependence similar to the DC transport measurements. We find a temperature dependent feature near nu≈ 30cmsp{-1} that is consistent with the prediction of a small energy gap Esb{g}≈ 4meV and also with a soft librational mode in SWNT bundles. We have directly measured the absorptivity of high quality single crystals of YBasb2Cusb3Osb{6.5} and Tlsb2Basb2Casb2Cusb3Osb{10-delta} over the frequency range 50 < nu < 800cmsp{-1} at a temperature of 1.2K. Direct absorptivity measurements are powerful for studying materials in the superconducting state since in conventional superconductors the loss at frequencies below the energy gap is zero

  20. Surface wet-ability modification of thin PECVD silicon nitride layers by 40 keV argon ion treatments

    NASA Astrophysics Data System (ADS)

    Caridi, F.; Picciotto, A.; Vanzetti, L.; Iacob, E.; Scolaro, C.

    2015-10-01

    Measurements of wet-ability of liquid drops have been performed on a 30 nm silicon nitride (Si3N4) film deposited by a PECVD reactor on a silicon wafer and implanted by 40 keV argon ions at different doses. Surface treatments by using Ar ion beams have been employed to modify the wet-ability. The chemical composition of the first Si3N4 monolayer was investigated by means of X-ray Photoelectron Spectroscopy (XPS). The surface morphology was tested by Atomic Force Microscopy (AFM). Results put in evidence the best implantation conditions for silicon nitride to increase or to reduce the wet-ability of the biological liquid. This permits to improve the biocompatibility and functionality of Si3N4. In particular experimental results show that argon ion bombardment increases the contact angle, enhances the oxygen content and increases the surface roughness.

  1. Strong enhancement of spontaneous emission in amorphous-silicon-nitride photonic crystal based coupled-microcavity structures

    NASA Astrophysics Data System (ADS)

    Bayindir, M.; Tanriseven, S.; Aydinli, A.; Ozbay, E.

    We investigated photoluminescence (PL) from one-dimensional photonic band gap structures. The photonic crystals, a Fabry-Perot (FP) resonator and a coupled-microcavity (CMC) structure, were fabricated by using alternating hydrogenated amorphous-silicon-nitride and hydrogenated amorphous-silicon-oxide layers. It was observed that these structures strongly modify the PL spectra from optically active amorphous-silicon-nitride thin films. Narrow-band and wide-band PL spectra were achieved in the FP microcavity and the CMC structure, respectively. The angle dependence of PL peak of the FP resonator was also investigated. We also observed that the spontaneous emission increased drastically at the coupled-cavity band edge of the CMC structure due to extremely low group velocity and long photon lifetime. The measurements agree well with the transfer-matrix method results and the prediction of the tight-binding approximation.

  2. Nanopore-spanning lipid bilayers on silicon nitride membranes that seal and selectively transport ions.

    PubMed

    Korman, Christopher E; Megens, Mischa; Ajo-Franklin, Caroline M; Horsley, David A

    2013-04-09

    We report the formation of POPC lipid bilayers that span 130 nm pores in a freestanding silicon nitride film supported on a silicon substrate. These solvent-free lipid membranes self-assemble on organosilane-treated Si3N4 via the fusion of 200 nm unilamellar vesicles. Membrane fluidity is verified by fluorescence recovery after photobleaching (FRAP), and membrane resistance in excess of 1 GΩ is demonstrated using electrical impedance spectroscopy (EIS). An array of 40,000 membranes maintained high impedance over 72 h, followed by rupture of most of the membranes by 82 h. Membrane incorporation of gramicidin, a model ion channel, resulted in increased membrane conductance. This membrane conductance was diminished when the gramicidin channels were blocked with CaCl2, indicating that the change in membrane conductance results from gramicidin-mediated ion transport. These very stable, biologically functional pore-spanning membranes open many possibilities for silicon-based ion-channel devices for applications such as biosensors and high-throughput drug screening.

  3. Role of Surface Termination in Atomic Layer Deposition of Silicon Nitride.

    PubMed

    Ande, Chaitanya Krishna; Knoops, Harm C M; de Peuter, Koen; van Drunen, Maarten; Elliott, Simon D; Kessels, Wilhelmus M M

    2015-09-17

    There is an urgent need to deposit uniform, high-quality, conformal SiN(x) thin films at a low-temperature. Conforming to these constraints, we recently developed a plasma enhanced atomic layer deposition (ALD) process with bis(tertiary-butyl-amino)silane (BTBAS) as the silicon precursor. However, deposition of high quality SiNx thin films at reasonable growth rates occurs only when N2 plasma is used as the coreactant; strongly reduced growth rates are observed when other coreactants like NH3 plasma, or N2-H2 plasma are used. Experiments reported in this Letter reveal that NH(x)- or H- containing plasmas suppress film deposition by terminating reactive surface sites with H and NH(x) groups and inhibiting precursor adsorption. To understand the role of these surface groups on precursor adsorption, we carried out first-principles calculations of precursor adsorption on the β-Si3N4(0001) surface with different surface terminations. They show that adsorption of the precursor is strong on surfaces with undercoordinated surface sites. In contrast, on surfaces with H, NH2 groups, or both, steric hindrance leads to weak precursor adsorption. Experimental and first-principles results together show that using an N2 plasma to generate reactive undercoordinated surface sites allows strong adsorption of the silicon precursor and, hence, is key to successful deposition of silicon nitride by ALD.

  4. High-quality silicon on silicon nitride integrated optical platform with an octave-spanning adiabatic interlayer coupler.

    PubMed

    Hosseinnia, Amir H; Atabaki, Amir H; Eftekhar, Ali A; Adibi, Ali

    2015-11-16

    Hybrid nanophotonic platforms based on three-dimensional integration of different photonic materials are emerging as promising ecosystems for the optoelectronic device fabrication. In order to benefit from key features of both silicon (Si) and silicon nitride (SiN) on a single chip, we have developed a wafer-scale hybrid photonic platform based on the integration of a thin crystalline Si layer on top of a thin SiN layer with an ultra-thin oxide buffer layer. A complete optical path in the hybrid platform is demonstrated by coupling light back and forth between nanophotonic devices in Si and SiN layers. Using an adiabatic tapered coupling method, a record-low interlayer coupling-loss of 0.02 dB is achieved at 1550 nm telecommunication wavelength window. We also demonstrate high-Q resonators on the hybrid material platform with intrinsic Q's as high as 3 × 10(6) for a 60 μm-radius microring resonator, which is (to the best of our knowledge) the highest Q observed for a micro-resonator on a hybrid Si/SiN platform.

  5. The Silicon / Silicon Nitride Interface and Fracture in Si: Molecular Dynamics Simulations

    NASA Astrophysics Data System (ADS)

    Bachlechner, Martina E.; Kalia, Rajiv K.; Vashishta, Priya; Ebbsjö, Ingvar

    1997-03-01

    The interface structure of a Si_3N_4(0001) film on a Si(111) substrate is studied using the molecular dynamics (MD) method. Bulk Si is described by the Stillinger-Weber potential and Si_3N4 by a combination of two-body and three-body contributions. At the interface, the charge transfer from silicon to nitrogen is taken from LCAO electronic structure calculations. Using these Si, Si_3N4 and interface interactions in MD simulations, we determine structural correlations in the interfacial regions. Results for crack propagation in silicon will also be presented.

  6. III-Nitride-on-silicon microdisk lasers from the blue to the deep ultra-violet

    NASA Astrophysics Data System (ADS)

    Sellés, J.; Crepel, V.; Roland, I.; El Kurdi, M.; Checoury, X.; Boucaud, P.; Mexis, M.; Leroux, M.; Damilano, B.; Rennesson, S.; Semond, F.; Gayral, B.; Brimont, C.; Guillet, T.

    2016-12-01

    We present a series of microdisk lasers realized within the same GaN-on-Si photonic platform scheme, and operating at room temperature under pulsed optical pumping over a broad spectral range extending over λ = 275 nm-470 nm. The III-nitride microdisks embed either binary GaN/AlN multiple quantum wells (MQWs) for UV operation, or ternary InGaN/GaN MQWs for violet and blue operation. This demonstrates the versatility of this nitride-on-silicon platform, and the realization on this platform of efficient active layers for lasing action over a 200 nm broad UV to visible spectral range. We probe the lasing threshold carrier density over the whole spectral range and found that it is similar whatever the emission wavelength for these Q > 1000 microdisk resonators with a constant material quality until quantum confined Stark effect takes over. The threshold is also found independent of microdisk diameters from 3 to 12 μm, with a β factor intermediate between the one of vertical cavity lasers and the one of small modal volume "thresholdless" lasers.

  7. 1/f noise in thin oxide p-channel metal-nitride-oxide-silicon transistors

    NASA Astrophysics Data System (ADS)

    Maes, Herman E.; Usmani, Sabir H.

    1983-04-01

    The 1/f noise behavior of p-channel metal-nitride-oxide-silicon transistors is presented. Devices with different oxide thicknesses, geometries and different technological treatments were used for this study. It is shown that the noise behavior can be well explained quantitatively with the number fluctuation model developed for MOS transistors. The close correlation between the increase of the noise and of the interface state density after different levels of degradation indeed indicates that the exchange of carriers between the channel and the interface traps lies at the origin of the 1/f noise. The observed degradation in MNOS devices is consistent with a diffusion controlled model for the creation of surface traps but is found to be a saturating effect. The predictions of the mobility fluctuation model are not confirmed in our experiments.

  8. Octave-spanning coherent supercontinuum generation in a silicon nitride waveguide.

    PubMed

    Johnson, Adrea R; Mayer, Aline S; Klenner, Alexander; Luke, Kevin; Lamb, Erin S; Lamont, Michael R E; Joshi, Chaitanya; Okawachi, Yoshitomo; Wise, Frank W; Lipson, Michal; Keller, Ursula; Gaeta, Alexander L

    2015-11-01

    We demonstrate the generation of a supercontinuum spanning more than 1.4 octaves in a silicon nitride waveguide using sub-100-fs pulses at 1 μm generated by either a 53-MHz, diode-pumped ytterbium (Yb) fiber laser or a 1-GHz, Yb:CaAlGdO(4) (Yb:CALGO) laser. Our numerical simulations show that the broadband supercontinuum is fully coherent, and a spectral interference measurement is used to verify that the supercontinuum generated with the Yb:CALGO laser possesses a high degree of coherence over the majority of its spectral bandwidth. This coherent spectrum may be utilized for optical coherence tomography, spectroscopy, and frequency metrology.

  9. Combined solid and liquid lubrication of silicon nitride under boundary conditions

    NASA Astrophysics Data System (ADS)

    Ajayi, O. O.; Erdemir, A.; Hsieh, J. H.; Erck, R. A.; Fenske, G. R.

    1992-07-01

    The present study showed that an effective way of lubricating ceramic surfaces under boundary conditions both at room temperature and at high temperatures of 150 and 250 C was the combined effect of solid, i.e., soft metal-Ag, and liquid lubricants, i.e., polyol-ester-based synthetic oil. Compared to dry sliding of uncoated materials, oil-lubricated sliding of silver-coated silicon nitride surfaces resulted, for the conditions tested, in a decrease of the friction coefficient by a factor of 18 and of specific wear rate by more than four orders of magnitude. The Ag coating, which was formed in part by ion-beam-assisted deposition, was effective in preventing ceramic-to-ceramic contact under boundary-lubricated regimes. The only observed drawback was the occurrence of a chemical interaction between the Ag film and sulfur from the oil, which reduced the durability of the Ag film.

  10. Silicon Nitride (Si3N4) implants: the future of dental implantology?

    PubMed

    Badran, Zahi; Struillou, Xavier; Hughes, Francis J; Soueidan, Assem; Hoornaert, Alain; Ide, Mark

    2017-03-16

    For decades titanium has been the preferred material for dental implant fabrication, with mechanical and biological performance resulting in high clinical success rates. Tshese have been further enhanced by incremental development of surface modifications aimed at improving speed and degree of osseointegration and resulting in enhanced clinical treatment options and outcomes. However, increasing demand for metal-free dental restorations has also led to the development of ceramic-based dental implants such as zirconia. In orthopaedics, alternative biomaterials have been used for implant applications such as polyetheretherketone or silicon nitride. The latter is potentially of particular interest for oral use as it has been shown to have antibacterial properties. In this paper we aim to shed light on this particular biomaterial as a future promising candidate for dental implantology applications, addressing basic specifications required for any dental implant material.

  11. Maximizing cubic phase gallium nitride surface coverage on nano-patterned silicon (100)

    NASA Astrophysics Data System (ADS)

    Liu, R.; Bayram, C.

    2016-07-01

    Here we investigate the hexagonal-to-cubic phase transition in metalorganic-chemical-vapor-deposition-grown gallium nitride enabled via silicon (100) nano-patterning. Electron backscatter diffraction and depth-resolved cathodoluminescence experiments show complete cubic phase GaN surface coverage when GaN deposition thickness ( hc ), etch depth ( td ), and opening width ( p ) obey hc≈1.06 p -0.75 td ; in line with a geometrical model based on crystallography. Cubic GaN uniformity is studied via electron backscatter diffraction and cathodoluminescence measurements. Atomic force microscopy reveals a smooth cubic GaN surface. Phase-transition cubic GaN shows promising optical and structural quality for integrated photonic devices.

  12. Structural Evolution of Silicon Oxynitride Fiber Reinforced Boron Nitride Matrix Composite at High Temperatures

    NASA Astrophysics Data System (ADS)

    Zou, Chunrong; Li, Bin; Zhang, Changrui; Wang, Siqing; Xie, Zhengfang; Shao, Changwei

    2016-02-01

    The structural evolution of a silicon oxynitride fiber reinforced boron nitride matrix (Si-N-Of/BN) wave-transparent composite at high temperatures was investigated. When heat treated at 1600 °C, the composite retained a favorable bending strength of 55.3 MPa while partially crystallizing to Si2N2O and h-BN from the as-received amorphous structure. The Si-N-O fibers still performed as effective reinforcements despite the presence of small pores due to fiber decomposition. Upon heat treatment at 1800 °C, the Si-N-O fibers already lost their reinforcing function and rough hollow microstructure formed within the fibers because of the accelerated decomposition. Further heating to 2000 °C led to the complete decomposition of the reinforcing fibers and only h-BN particles survived. The crystallization and decomposition behaviors of the composite at high temperatures are discussed.

  13. Evanescent excitation and collection of spontaneous Raman spectra using silicon nitride nanophotonic waveguides.

    PubMed

    Dhakal, Ashim; Subramanian, Ananth Z; Wuytens, Pieter; Peyskens, Frédéric; Le Thomas, Nicolas; Baets, Roel

    2014-07-01

    We experimentally demonstrate the use of high contrast, CMOS-compatible integrated photonic waveguides for Raman spectroscopy. We also derive the dependence of collected Raman power with the waveguide parameters and experimentally verify the derived relations. Isopropyl alcohol (IPA) is evanescently excited and detected using single-mode silicon-nitride strip waveguides. We analyze the measured signal strength of pure IPA corresponding to an 819  cm⁻¹ Raman peak due to in-phase C-C-O stretch vibration for several waveguide lengths and deduce a pump power to Raman signal conversion efficiency on the waveguide to be at least 10⁻¹¹  per cm.

  14. Fano resonances in a multimode waveguide coupled to a high-Q silicon nitride ring resonator.

    PubMed

    Ding, Dapeng; de Dood, Michiel J A; Bauters, Jared F; Heck, Martijn J R; Bowers, John E; Bouwmeester, Dirk

    2014-03-24

    Silicon nitride (Si3N4) optical ring resonators provide exceptional opportunities for low-loss integrated optics. Here we study the transmission through a multimode waveguide coupled to a Si3N4 ring resonator. By coupling single-mode fibers to both input and output ports of the waveguide we selectively excite and probe combinations of modes in the waveguide. Strong asymmetric Fano resonances are observed and the degree of asymmetry can be tuned through the positions of the input and output fibers. The Fano resonance results from the interference between modes of the waveguide and light that couples resonantly to the ring resonator. We develop a theoretical model based on the coupled mode theory to describe the experimental results. The large extension of the optical modes out of the Si3N4 core makes this system promising for sensing applications.

  15. Microstructure and Phase Composition of Cold Isostatically Pressed and Pressureless Sintered Silicon Nitride.

    PubMed

    Lukianova, O A; Krasilnikov, V V; Parkhomenko, A A; Sirota, V V

    2016-12-01

    The microstructure and physical properties of new Y2O3 and Al2O3 oxide-doped silicon nitride ceramics fabricated by cold isostatic pressing and free sintering were investigated. The phase composition of produced material was also studied by X-ray diffraction at room and elevated temperature. The fabricated ceramics featured a microstructure of Si5AlON7 grains with a fine-grained α-Si3N4 with a small amount of Y2SiAlON5. Described ceramics is attractive for many high-temperature structural applications due to beneficial combination of fine-grained structure with improved mechanical properties and small weight loss.

  16. Improvement of creep resistance of sintered silicon nitride by hot isostatic exudation of intergranular glass

    SciTech Connect

    Rouxel, T.; Besson, J. ); Goursat, P. )

    1993-11-01

    Postsintering treatment of pressureless-sintered silicon nitride at 1,250 C (i.e., above the glass transition temperature of the amorphous phase) by hot isostatic pressing was performed to diminish the quantity of residual intergranular amorphous phase that results from densification aids. The samples were first embedded in a powder (SiC or Al[sub 2]O[sub 3]), which worked as a diffusion barrier and a pressure transmitter; then, both sample and surrounding powder were encapsulated in evacuated tubes of borosilicate glass or stainless steel. Energy dispersive X-ray spectrometry proved that, during the treatment, a noticeable amount of intergranular vitreous phase exuded out of the sample into powder pores. As a consequence, the creep resistance was enhanced by a factor of 3. When the HIP treatment was associated with a subsequent crystallization treatment, a further improvement in creep resistance was obtained.

  17. Quasi-freestanding epitaxial graphene transistor with silicon nitride top gate

    NASA Astrophysics Data System (ADS)

    Wehrfritz, Peter; Fromm, Felix; Malzer, Stefan; Seyller, Thomas

    2014-07-01

    We report on top-gated field effect devices built from quasi-freestanding monolayer graphene (QFMLG) on 6H-SiC(0001) in combination with a silicon nitride (SiN) gate dielectric. SiN was grown by plasma enhanced chemical vapour deposition. The composition of the dielectric was investigated by x-ray photoelectron spectroscopy (XPS). Spectroscopic and electrical characterization of the graphene layers were done by XPS, Raman spectroscopy and Hall effect measurements before and after SiN deposition. In contrast to previous reports on SiN/graphene, we observe that our dielectric layer induces strong n-type doping. With such a gate insulator, the neutrality level of the QFMLG could be accessed by an appropriate gate voltage.

  18. Single Photon Counting UV Solar-Blind Detectors Using Silicon and III-Nitride Materials

    PubMed Central

    Nikzad, Shouleh; Hoenk, Michael; Jewell, April D.; Hennessy, John J.; Carver, Alexander G.; Jones, Todd J.; Goodsall, Timothy M.; Hamden, Erika T.; Suvarna, Puneet; Bulmer, J.; Shahedipour-Sandvik, F.; Charbon, Edoardo; Padmanabhan, Preethi; Hancock, Bruce; Bell, L. Douglas

    2016-01-01

    Ultraviolet (UV) studies in astronomy, cosmology, planetary studies, biological and medical applications often require precision detection of faint objects and in many cases require photon-counting detection. We present an overview of two approaches for achieving photon counting in the UV. The first approach involves UV enhancement of photon-counting silicon detectors, including electron multiplying charge-coupled devices and avalanche photodiodes. The approach used here employs molecular beam epitaxy for delta doping and superlattice doping for surface passivation and high UV quantum efficiency. Additional UV enhancements include antireflection (AR) and solar-blind UV bandpass coatings prepared by atomic layer deposition. Quantum efficiency (QE) measurements show QE > 50% in the 100–300 nm range for detectors with simple AR coatings, and QE ≅ 80% at ~206 nm has been shown when more complex AR coatings are used. The second approach is based on avalanche photodiodes in III-nitride materials with high QE and intrinsic solar blindness. PMID:27338399

  19. Design and optimization of optical modulators based on graphene-on-silicon nitride microring resonators

    NASA Astrophysics Data System (ADS)

    Wu, Zeru; Chen, Yujie; Zhang, Tianyou; Shao, Zengkai; Wen, Yuanhui; Xu, Pengfei; Zhang, Yanfeng; Yu, Siyuan

    2017-04-01

    In order to overcome the challenge of obtaining high modulation depth due to weak graphene–light interaction, a graphene-on-silicon nitride (SiNx) microring resonator based on graphene’s gate-tunable optical conductivity is proposed and studied. Geometrical parameters of graphene-on-SiNx waveguide are systematically analyzed and optimized, yielding a loss tunability of 0.04 dB μm‑1 and an effective index variation of 0.0022. We explicitly study the interaction between graphene and a 40 μm-radius microring resonator, where electro-absorptive and electro-refractive modulation are both taken into account. By choosing appropriate graphene coverage and coupling coefficient, a high modulation depth of over 40 dB with large fabrication tolerance is obtained.

  20. Observation of ultraslow stress release in silicon nitride films on CaF{sub 2}

    SciTech Connect

    Guo, Tianyi; Deen, M. Jamal; Xu, Changqing; Fang, Qiyin; Selvaganapathy, P. Ravi; Zhang, Haiying

    2015-07-15

    Silicon nitride thin films are deposited by plasma-enhanced chemical vapor deposition on (100) and (111) CaF{sub 2} crystalline substrates. Delaminated wavy buckles formed during the release of internal compressive stress in the films and the stress releasing processes are observed macroscopically and microscopically. The stress release patterns start from the substrate edges and propagate to the center along defined directions aligned with the crystallographic orientations of the substrate. The stress releasing velocity of SiN{sub x} film on (111) CaF{sub 2} is larger than that of SiN{sub x} film with the same thickness on (100) CaF{sub 2}. The velocities of SiN{sub x} film on both (100) and (111) CaF{sub 2} increase with the film thickness. The stress releasing process is initiated when the films are exposed to atmosphere, but it is not a chemical change from x-ray photoelectron spectroscopy.

  1. Paralinear Oxidation of Silicon Nitride in a Water Vapor/Oxygen Environment

    NASA Technical Reports Server (NTRS)

    Fox, Dennis S.; Opila, Elizabeth J.; Nguyen, QuynhGiao; Humphrey, Donald L.; Lewton, Susan M.; Gray, Hugh R. (Technical Monitor)

    2002-01-01

    Three silicon nitride materials were exposed to dry oxygen flowing at 0.44 cm/s at temperatures between 1200 and 1400 C. Reaction kinetics were measured with a continuously recording microbalance. Parabolic kinetics were observed. When the same materials were exposed to a 50% H2O - 50% O2 gas mixture flowing at 4.4 cm/s, all three types exhibited paralinear kinetics. The material is oxidized by water vapor to form solid silica. The protective silica is in turn volatilized by water vapor to form primarily gaseous Si(OH)4. Nonlinear least squares analysis and a paralinear kinetic model were used to determine both parabolic and linear rate constants from the kinetic data. Volatilization of the protective silica scale can result in accelerated consumption of Si3N4. Recession rates under conditions more representative of actual combustors are compared to the furnace data.

  2. A hybrid density functional study of silicon and phosphorus doped hexagonal boron nitride monolayer

    NASA Astrophysics Data System (ADS)

    Mapasha, R. E.; Igumbor, E.; Chetty, N.

    2016-10-01

    We present a hybrid density functional study of silicon (Si) and phosphorus (P) doped hexagonal boron nitride (h-BN). The local geometry, electronic structure and thermodynamic stability of Si B , Si N , P B and P N are examined using hybrid Heyd-Scuseria- Ernzerhof (HSE) functional. The defect induced buckling and the local bond distances around the defect are sensitive to charge state modulation q = -2, -1, 0, +1 and +2. The +1 charge state is found to be the most energetically stable state and significantly reduces the buckling. Based on the charge state thermodynamic transition levels, we noted that the Si N , Si N and P B defects are too deep to be ionized, and can alter the optical properties of h-BN material.

  3. Steel bonded dense silicon nitride compositions and method for their fabrication

    DOEpatents

    Landingham, Richard L.; Shell, Thomas E.

    1987-01-01

    A two-stage bonding technique for bonding high density silicon nitride and other ceramic materials to stainless steel and other hard metals, and multilayered ceramic-metal composites prepared by the technique are disclosed. The technique involves initially slurry coating a surface of the ceramic material at about 1500.degree. C. in a vacuum with a refractory material and the stainless steel is then pressure bonded to the metallic coated surface by brazing it with nickel-copper-silver or nickel-copper-manganese alloys at a temperature in the range of about 850.degree. to 950.degree. C. in a vacuum. The two-stage bonding technique minimizes the temperature-expansion mismatch between the dissimilar materials.

  4. Steel bonded dense silicon nitride compositions and method for their fabrication

    DOEpatents

    Landingham, R.L.; Shell, T.E.

    1985-05-20

    A two-stage bonding technique for bonding high density silicon nitride and other ceramic materials to stainless steel and other hard metals, and multilayered ceramic-metal composites prepared by the technique are disclosed. The technique involves initially slurry coating a surface of the ceramic material at about 1500/sup 0/C in a vacuum with a refractory material and the stainless steel is then pressure bonded to the metallic coated surface by brazing it with nickel-copper-silver or nickel-copper-manganese alloys at a temperature in the range of about 850/sup 0/ to 950/sup 0/C in a vacuum. The two-stage bonding technique minimizes the temperature-expansion mismatch between the dissimilar materials.

  5. Paramagnetic nitrogen defects in silicon nitride. [Amorphous hydrogenated SiN

    SciTech Connect

    Warren, W.L. ); Kanicki, J. . Thomas J. Watson Research Center); Robertson, J. ); Poindexter, E.H. )

    1992-01-01

    Photocreation mechanisms and properties of nitrogen dangling bonds in amorphous hydrogenated silicon nitride (a-SiN[sub x]:H) thin films are investigated. We find that the creation kinetics are strongly dependent on the post-deposition anneal; this thermal process can be described by a simple exponential function which yields an activation energy of 0.8 eV. The compositional dependence of the nitrogen dangling bond center suggests that its energy level lies close to the valence band edge, in agreement with theoretical calculations. This energy level position can explain why a-SiN[sub x]:H films often become conducting following a high post-deposition anneal.

  6. Single Photon Counting UV Solar-Blind Detectors Using Silicon and III-Nitride Materials.

    PubMed

    Nikzad, Shouleh; Hoenk, Michael; Jewell, April D; Hennessy, John J; Carver, Alexander G; Jones, Todd J; Goodsall, Timothy M; Hamden, Erika T; Suvarna, Puneet; Bulmer, J; Shahedipour-Sandvik, F; Charbon, Edoardo; Padmanabhan, Preethi; Hancock, Bruce; Bell, L Douglas

    2016-06-21

    Ultraviolet (UV) studies in astronomy, cosmology, planetary studies, biological and medical applications often require precision detection of faint objects and in many cases require photon-counting detection. We present an overview of two approaches for achieving photon counting in the UV. The first approach involves UV enhancement of photon-counting silicon detectors, including electron multiplying charge-coupled devices and avalanche photodiodes. The approach used here employs molecular beam epitaxy for delta doping and superlattice doping for surface passivation and high UV quantum efficiency. Additional UV enhancements include antireflection (AR) and solar-blind UV bandpass coatings prepared by atomic layer deposition. Quantum efficiency (QE) measurements show QE > 50% in the 100-300 nm range for detectors with simple AR coatings, and QE ≅ 80% at ~206 nm has been shown when more complex AR coatings are used. The second approach is based on avalanche photodiodes in III-nitride materials with high QE and intrinsic solar blindness.

  7. Single standing carbon nanotube array in gate holes using a silicon nitride cap layer

    SciTech Connect

    Lim, Sung Hoon; Yoon, Hyun Sik; Moon, Jong Hyun; Park, Kyu Chang; Jang, Jin

    2005-12-12

    We studied the growth of a single standing carbon nanotube (CNT) which was grown by plasma-enhanced chemical vapor deposition in the gate hole formed by conventional photolithography in the silicon nitride. The number of CNT per hole increases with increasing the gate hole diameter and a single CNT could be grown in a 3 {mu}m hole. A single standing CNT in a gate hole exhibited the turn-on field of 1.6 V/{mu}m and the current density of 16 {mu}A at 3.3 V/{mu}m. The emission currents follow the Fowler-Nordheim equation with a field enhancement factor of 1.14x10{sup 7}.

  8. Design Evaluation Using Finite Element Analysis of Cooled Silicon Nitride Plates for a Turbine Blade Application

    NASA Technical Reports Server (NTRS)

    Abdul-Aziz, Ali; Baaklini, George Y.; Bhatt, Ramakrishna T.

    2001-01-01

    Two- and three-dimensional finite element analyses were performed on uncoated and thermal barrier coated (TBC) silicon nitride plates with and without internal cooling by air. Steady-state heat-transfer analyses were done to optimize the size and the geometry of the cooling channels to reduce thermal stresses, and to evaluate the thermal environment experienced by the plate during burner rig testing. The limited experimental data available were used to model the thermal profile exerted by the flame on the plate. Thermal stress analyses were performed to assess the stress response due to thermal loading. Contours for the temperature and the representative stresses for the plates were generated and presented for different cooling hole sizes and shapes. Analysis indicates that the TBC experienced higher stresses, and the temperature gradient was much reduced when the plate was internally cooled by air. The advantages and disadvantages of several cooling channel layouts were evaluated.

  9. Self-referenced silicon nitride array microring biosensor for toxin detection using glycans at visible wavelength

    NASA Astrophysics Data System (ADS)

    Ghasemi, Farshid; Eftekhar, Ali A.; Gottfried, David S.; Song, Xuezheng; Cummings, Richard D.; Adibi, Ali

    2013-02-01

    We report on application of on-chip referencing to improve the limit-of-detection (LOD) in compact silicon nitride (SiN) microring arrays. Microring resonators, fabricated by e-beam lithography and fluorine-based etching, are designed for visible wavelengths (656nm) and have a footprint of 20 x 20 μm. GM1 ganglioside is used as the specific ligand for recognition of Cholera Toxin Subunit B (CTB), with Ricinus Communis Agglutinin I (RCA I) as a negative control. Using micro-cantilever based printing less than 10 pL of glycan solution is consumed per microring. Real-time data on analyte binding is extracted from the shifts in resonance wavelengths of the microrings.

  10. Identification of light elements in silicon nitride by aberration-corrected scanning transmission electron microscopy.

    PubMed

    Idrobo, Juan C; Walkosz, Weronika; Klie, Robert F; Oğüt, Serdar

    2012-12-01

    In silicon nitride structural ceramics, the overall mechanical and thermal properties are controlled by the atomic and electronic structures at the interface between the ceramic grains and the amorphous intergranular films (IGFs) formed by various sintering additives. In the last ten years the atomic arrangements of heavy elements (rare-earths) at the Si(3)N(4)/IGF interfaces have been resolved. However, the atomic position of light elements, without which it is not possible to obtain a complete description of the interfaces, has been lacking. This review article details the authors' efforts to identify the atomic arrangement of light elements such as nitrogen and oxygen at the Si(3)N(4)/SiO(2) interface and in bulk Si(3)N(4) using aberration-corrected scanning transmission electron microscopy.

  11. Influence of molybdenum silicide additions on high-temperature oxidation resistance of silicon nitride materials

    SciTech Connect

    Klemm, H.; Tangermann, K.; Schubert, C.; Hermel, W.

    1996-09-01

    The influence of additions of molybdenum disilicide (MoSi{sub 2}) on the microstructure and the mechanical properties of a silicon nitride (Si{sub 3}N{sub 4}) material, with neodymium oxide (Nd{sub 2}O{sub 3}) and aluminum nitride (AlN) as sintering aids, was studied. The composites, containing 5, 10, and 17.6 wt% MoSi{sub 2}, were fabricated by hot pressing. All materials exhibited a similar phase composition, detected by X-ray diffractometry. Up to MoSi{sub 2} additions of 10 wt%, mechanical properties such as strength, fracture toughness, or creep at 1,400 C were not affected significantly, in comparison to that of monolithic Si{sub 3}N{sub 4}. The oxidation resistance of the composites, in terms of weight gain, degraded. After 1,000 h of oxidation at 1,400 and 1,450 C in air, a greater weight gain (by a factor of approximately three) was obtained, in comparison to that of the material without MoSi{sub 2}. Nevertheless, after 1,000 h of oxidation, the degradation in strength of the composites was considerably less severe than that of the material without MoSi{sub 2}. An additional layer was formed, caused by processes at the surface of the Si{sub 3}N{sub 4} material, preventing the formation of pores, cracks, or glassy-phase-rich areas, which are common features of oxidation damage in Si{sub 3}N{sub 4} materials. This surface layer, containing Mo{sub 5}Si{sub 3} and silicon oxynitride (Si{sub 2}ON{sub 2}), was the result of reactions between MoSi{sub 2}, Si{sub 3}N{sub 4}, and the oxygen penetrating by diffusion into the material during the high-temperature treatment.

  12. The cost of silicon nitride powder: What must it be to compete

    SciTech Connect

    Das, S.; Curlee, T.R.

    1992-02-01

    The ability of advanced ceramic components to compete with similar metallic parts will depend in part on current and future efforts to reduce the cost of ceramic parts. This paper examines the potential reductions in part cost that could result from the development of less expensive advanced ceramic powders. The analysis focuses specifically on two silicon nitride engine components -- roller followers and turbocharger rotors. The results of the process-cost models developed for this work suggest that reductions in the cost of advanced silicon nitride powder from its current level of about $20 per pound to about $5 per pound will not in itself be sufficient to lower the cost of ceramic parts below the current cost of similar metallic components. This work also examines if combinations of lower-cost powders and further improvements in other key technical parameters to which costs are most sensitive could push the cost of ceramics below the cost of metallics. Although these sensitivity analyses are reflective of technical improvements that are very optimistic, the resulting part costs are estimated to remain higher than similar metallic parts. Our findings call into question the widely-held notion that the cost of ceramic components must not exceed the cost of similar metallic parts if ceramics are to be competitive. Economic viability will ultimately be decided not on the basis of which part is less costly, but on an assessment of the marginal costs and benefits provided by ceramics and metallics. This analysis does not consider the benefits side of the equation. Our findings on the cost side of the equation suggest that the competitiveness of advanced ceramics will ultimately be decided by our ability to evaluate and communicate the higher benefits that advanced ceramic parts may offer.

  13. The cost of silicon nitride powder: What must it be to compete?

    SciTech Connect

    Das, S.; Curlee, T.R.

    1992-02-01

    The ability of advanced ceramic components to compete with similar metallic parts will depend in part on current and future efforts to reduce the cost of ceramic parts. This paper examines the potential reductions in part cost that could result from the development of less expensive advanced ceramic powders. The analysis focuses specifically on two silicon nitride engine components -- roller followers and turbocharger rotors. The results of the process-cost models developed for this work suggest that reductions in the cost of advanced silicon nitride powder from its current level of about $20 per pound to about $5 per pound will not in itself be sufficient to lower the cost of ceramic parts below the current cost of similar metallic components. This work also examines if combinations of lower-cost powders and further improvements in other key technical parameters to which costs are most sensitive could push the cost of ceramics below the cost of metallics. Although these sensitivity analyses are reflective of technical improvements that are very optimistic, the resulting part costs are estimated to remain higher than similar metallic parts. Our findings call into question the widely-held notion that the cost of ceramic components must not exceed the cost of similar metallic parts if ceramics are to be competitive. Economic viability will ultimately be decided not on the basis of which part is less costly, but on an assessment of the marginal costs and benefits provided by ceramics and metallics. This analysis does not consider the benefits side of the equation. Our findings on the cost side of the equation suggest that the competitiveness of advanced ceramics will ultimately be decided by our ability to evaluate and communicate the higher benefits that advanced ceramic parts may offer.

  14. Luminescence mechanism for Er3+ ions in a silicon-rich nitride host under electrical pumping

    NASA Astrophysics Data System (ADS)

    Berencén, Y.; Illera, S.; Rebohle, L.; Ramírez, J. M.; Wutzler, R.; Cirera, A.; Hiller, D.; Rodríguez, J. A.; Skorupa, W.; Garrido, B.

    2016-03-01

    A combined experimental and theoretical study on the electroluminescent excitation mechanism for trivalent erbium (Er3+) ions in a silicon-rich nitride (SiN x ) host is presented. Direct impact by hot electrons is demonstrated to be the fundamental excitation mechanism. The Er3+ excitation by energy transfer from silicon nanostructures and/or defects is shown to be marginal under electrical pumping. A bilayer structure made of a SiO2 electron-accelerating layer and an Er-implanted SiN x layer has been sandwiched between a metal-insulator-semiconductor structure with a highly doped N-type silicon substrate and an indium-tin-oxide window functioning as a transparent electrode. Monte Carlo (MC) simulations are used to model hot electron transport in the proposed device structure. Acoustic, polar and non-polar optical electron-phonon scattering mechanisms are considered as well as a new scattering process related to the trapping/detrapping on energetically shallow traps in the band gap of silicon nitride. For SiO2 layers around 20 nm-thick and beyond, the number and kinetic energy of hot electrons before entering the SiN x layer are maximal. A significant enhancement of the 1.54 μm electroluminescence power efficiency of two orders of magnitude is observed in devices composed of a 20 nm-thick SiO2 layer compared to those composed of 10 nm-thick SiO2. We demonstrate by MC simulations that such a difference, in terms of power efficiency, is ascribed to the high-energy tail of the hot electron energy distribution, which becomes more pronounced as the SiO2 electron-accelerating layer thickness increases. It is also unveiled that direct excitation of the 1.54 μm Er3+ main radiative transition requiring an excitation energy of only 0.8 eV is inefficient, and that the major part of the Er3+ ions are excited via higher level energy states. The obtained results are sufficiently consistent to be extended to other trivalent rare-earth ions inside similar insulating material

  15. Microstructure development, compositional/physical gradient formation and related mechanical properties of gas-pressure-sintered silicon nitride ceramics

    NASA Astrophysics Data System (ADS)

    Tiegs, Terry Norman

    Three inter-related aspects in the fabrication of silicon nitride ceramics were performed for the thesis work. The topics included: (1) an analysis of the composition and physical gradients in bulk silicon nitride, (2) the effect of sintering parameters on microstructure development and the resulting mechanical properties, and (3) an investigation of ss-Sisb3Nsb4 nucleation and initial stage microstructure development. The composition and physical gradients in bulk silicon nitride are due to the furnace conditions and the environment adjacent to the samples. Loss of SiO from the exposed surfaces results in the formation of nitrogen-rich phases, such as melilite on the as-sintered surfaces. The high nitrogen concentration in the near-surface region promotes ss-Sisb3Nsb4 grain growth. Along with the compositional gradients, mechanical property differences also exist between the as-sintered surfaces and the bulk materials. For example, the strengths of as-sintered surfaces of Sisb3Nsb4-Ysb2Osb3-Alsb2Osb3 were observed to be reduced by more than 30% compared to the bulk material. Gas-pressure sintering (GPS) was used to densify silicon nitride two types of sintering additives: Sisb3Nsb4-6% Ysb2Osb3-2% Alsb2Osb3 and Sisb3Nsb4-Srsb2Lasb4Ybsb4(SiOsb4)sb6Osb2. For both compositions a lower densification temperature (1900sp°C in the present tests) was the most significant factor affecting the fracture toughness and promoting a bimodal grain structure. The low significance of the other process parameters implies the microstructure (and therefore properties) are essentially 'locked-in' during the densification stage. The kinetics of the alpha-to-ss Sisb3Nsb4 transformation are dependent on several characteristics of the starting silicon nitride powder. Most importantly, are the silicon nitride powder surface area and initial ss-Sisb3Nsb4 content which both tend to increase the transformation rate. Other factors, such as lattice oxygen or carbon contents, appear to contribute

  16. Formation mechanisms of Si3N4 and Si2N2O in silicon powder nitridation

    NASA Astrophysics Data System (ADS)

    Yao, Guisheng; Li, Yong; Jiang, Peng; Jin, Xiuming; Long, Menglong; Qin, Haixia; Kumar, R. Vasant

    2017-04-01

    Commercial silicon powders are nitrided at constant temperatures (1453 K; 1513 K; 1633 K; 1693 K). The X-ray diffraction results show that small amounts of Si3N4 and Si2N2O are formed as the nitridation products in the samples. Fibroid and short columnar Si3N4 are detected in the samples. The formation mechanisms of Si3N4 and Si2N2O are analyzed. During the initial stage of silicon powder nitridation, Si on the outside of sample captures slight amount of O2 in N2 atmosphere, forming a thin film of SiO2 on the surface which seals the residual silicon inside. And the oxygen partial pressure between the SiO2 film and free silicon is decreasing gradually, so passive oxidation transforms to active oxidation and metastable SiO(g) is produced. When the SiO(g) partial pressure is high enough, the SiO2 film will crack, and N2 is infiltrated into the central section of the sample through cracks, generating Si2N2O and short columnar Si3N4 in situ. At the same time, metastable SiO(g) reacts with N2 and form fibroid Si3N4. In the regions where the oxygen partial pressure is high, Si3N4 is oxidized into Si2N2O.

  17. Can metal-free silicon-doped hexagonal boron nitride nanosheets and nanotubes exhibit activity toward CO oxidation?

    PubMed

    Lin, Sen; Ye, Xinxin; Huang, Jing

    2015-01-14

    Si-doped hexagonal boron nitride nanosheets (Si-BNNS) and nanotubes (Si-BNNT) have been investigated by first-principle methods. The strong interaction between the silicon atom and the hexagonal boron nitride nanosheet or nanotube with a boron vacancy indicates that such nanocomposites should be very stable. The significant charge transfer from the Si-BNNS substrate to the O2 molecule, which could occupy the antibonding 2π* orbitals of O2, results in the activation of the adsorbed O2. The catalytic activity of the Si-BNNS for CO oxidation is explored and the calculated barrier (0.29 eV) of the reaction CO + O2→ CO2 + O is much lower than those on the traditional noble metals. This opens a new avenue to fabricate low cost and high activity boron nitride-based metal-free catalysts.

  18. Thermal stability of boron nitride/silicon p-n heterojunction diodes

    SciTech Connect

    Teii, Kungen Mizusako, Yusei; Hori, Takuro; Matsumoto, Seiichiro

    2015-10-21

    Heterojunctions of p-type cubic boron nitride (cBN) and n-type silicon with sp{sup 2}-bonded BN (sp{sup 2}BN) interlayers are fabricated under low-energy ion impact by plasma-enhanced chemical vapor deposition, and their rectification properties are studied at temperatures up to 573 K. The rectification ratio is increased up to the order of 10{sup 5} at room temperature by optimizing the thickness of the sp{sup 2}BN interlayer and the cBN fraction for suppressing the reverse leakage current. A highly rectifying p-type cBN/thick sp{sup 2}BN/n-type silicon junction diode shows irreversible rectification properties mainly characterized by a marked decrease in reverse current by an order of magnitude in an initial temperature ramp/down cycle. This irreversible behavior is much more reduced by conducting the cycle twice or more. The temperature-dependent properties confirm an overall increase in effective barrier heights for carrier injection and conduction by biasing at high temperatures, which consequently increases the thermal stability of the diode performance.

  19. Depth profiles of oxygen precipitates in nitride-coated silicon wafers subjected to rapid thermal annealing

    NASA Astrophysics Data System (ADS)

    Voronkov, V. V.; Falster, R.; Kim, TaeHyeong; Park, SoonSung; Torack, T.

    2013-07-01

    Silicon wafers, coated with a silicon nitride layer and subjected to high temperature Rapid Thermal Annealing (RTA) in Ar, show—upon a subsequent two-step precipitation anneal cycle (such as 800 °C + 1000 °C)—peculiar depth profiles of oxygen precipitate densities. Some profiles are sharply peaked near the wafer surface, sometimes with a zero bulk density. Other profiles are uniform in depth. The maximum density is always the same. These profiles are well reproduced by simulations assuming that precipitation starts from a uniformly distributed small oxide plates originated from RTA step and composed of oxygen atoms and vacancies ("VO2 plates"). During the first step of the precipitation anneal, an oxide layer propagates around this core plate by a process of oxygen attachment, meaning that an oxygen-only ring-shaped plate emerges around the original plate. These rings, depending on their size, then either dissolve or grow during the second part of the anneal leading to a rich variety of density profiles.

  20. All hot wire CVD TFTs with high deposition rate silicon nitride (3 nm/s)

    NASA Astrophysics Data System (ADS)

    Schropp, R. E. I.; Nishizaki, S.; Houweling, Z. S.; Verlaan, V.; van der Werf, C. H. M.; Matsumura, H.

    2008-03-01

    Using the hot wire (HW) chemical vapor deposition (CVD) method for the deposition of silicon nitride (SiN x) and amorphous silicon (a-Si:H) thin films we have achieved high deposition rates for device quality materials up to 7.3 nm/s and 3.5 nm/s, respectively. For thin films of SiN 1.3, deposited at 3 nm/s, the mass-density of the material reached a very high value of 3.0 g/cm 3. The silane utilization rate for this fast process is 77%. The high mass-density was consistent with the low 16BHF etch rate of 7 nm/min. We tested this SiN 1.3 in "all hot wire" thin film transistors (TFTs), along with a-Si:H material in the protocrystalline regime at 1 nm/s. Analysis shows that these "all hot wire" TFTs have a Vth = 1.7-2.4 V, an on/off ratio of 10 6, and a mobility of 0.4 cm 2/V s after a forming gas anneal. We therefore conclude that the HWCVD provides SiN x materials with dielectric properties at least as good as PECVD does, though at a much higher deposition rate and better gas utilization rates.

  1. Characterization of Strain Induced by PECVD Silicon Nitride Films in Transistor Channels

    NASA Astrophysics Data System (ADS)

    Thomas, R.; Benoit, D.; Clément, L.; Morin, P.; Cooper, D.; Bertin, F.

    2011-11-01

    In order to reach high levels of transistor performance, it is desirable to increase electrical conductivity of the device. An efficient way to enhance carrier mobility in the conduction channel is to generate strain in the structure using process-induced stress. To achieve that, stress engineering of the contact etch stop layer (CESL), an amorphous hydrogenated silicon nitride film deposited by plasma enhanced chemical vapour deposition on top of the metal oxide semiconductor assembly, is widely used since it is a low-cost technique. Indeed, this film possesses an intrinsic stress that can be set from tensile (σ = 1.6 GPa) to compressive (σ = -3.0 GPa) depending on deposition conditions. From an electrical point of view, strain induced in the silicon channel can lead to an increase of carrier mobility as high as 8-10% which in turn increases Ion/Ioff and decreases switching time of the transistor. Usually, strain induced in the channel is very low (0.1-0.3%), making quantitative measurements challenging. Moreover, stress transmission mechanisms are not fully understood at the nano-metre scale. To evaluate stress transmission in the silicon channel, we used dark-field electron holography characterization technique operating on both the Titan and Tecnai F20 transmission electron microscopes. Strain maps with nanometre spatial resolution, high sensitivity (Δɛ≈10-3%) and large field of view (400-500 nm2) have been obtained on CESL strained devices. In order to understand stress transfer mechanisms, we have analysed structures with varying spacing between patterns. The experimental results are compared to those obtained by 2-D finite elements analysis simulation.

  2. Two-stage metal-catalyst-free growth of high-quality polycrystalline graphene films on silicon nitride substrates.

    PubMed

    Chen, Jianyi; Guo, Yunlong; Wen, Yugeng; Huang, Liping; Xue, Yunzhou; Geng, Dechao; Wu, Bin; Luo, Birong; Yu, Gui; Liu, Yunqi

    2013-02-20

    By using two-stage, metal-catalyst-free chemical vapor deposition (CVD), it is demonstrated that high-quality polycrystalline graphene films can directly grow on silicon nitride substrates. The carrier mobility can reach about 1500 cm(2) V(-1) s(-1) , which is about three times the value of those grown on SiO(2) /Si substrates, and also is better than some examples of metal-catalyzed graphene, reflecting the good quality of the graphene lattice.

  3. Parallel fabrication of sub-50-nm uniformly sized nanoparticles by deposition through a patterned silicon nitride nanostencil.

    PubMed

    Yan, X-M; Contreras, A M; Koebel, M M; Liddle, J A; Somorjai, G A

    2005-06-01

    Using low-pressure chemical vapor deposition of silicon dioxide, we have reduced the size of 56-nm features in a silicon nitride membrane, called a stencil, down to 36 nm. Sub-50-nm uniformly sized nanoparticles are fabricated by electron-beam deposition of Pt through the stencil mask. A self-assembled monolayer (SAM) of tridecafluoro-1,1,2,2-tetrahydrooctyl-1-trichlorosilane was used to reduce Pt clogging of the nanosize holes during deposition as well as to protect the stencil during the postdeposition Pt removal. X-ray photoelectron spectroscopy shows that the SAM protects the stencil efficiently during this postdeposition removal of Pt.

  4. Foreign Object Damage in Disks of Two Gas-turbine-grade Silicon Nitrides by Steel Ball Projectiles at Ambient Temperature

    NASA Technical Reports Server (NTRS)

    Choi, Sung R.; Pereira, J. Michael; Janosik, Lesley A.; Bhatt, Ramakrishna T.

    2003-01-01

    Foreign object damage (FOD) behavior of two commercial gas-turbine-grade silicon nitrides, AS800 and SN282, was determined at ambient temperature through postimpact strength testing of disks impacted by steel ball projectiles with a diameter of 1.59 mm in a velocity range from 115 to 440 m/s. AS800 silicon nitride exhibited a greater FOD resistance than SN282, primarily due to its greater value of fracture toughness (k(sub Ic)). The critical impact velocity V(sub c) for which the corresponding postimpact strength was the lowest was V(sub c) approximately equal to 440 and 300 m/s AS800 and SN282, respectively. A unique lower strength regime was typified for both silicon nitrides depending on impact velocity and was attributed to significant radial cracking. The damage generated by projectile impact was typically in the form of ring, radial, and cone cracks with their severity and combination being dependent on impact velocity. Unlike the thick (4 millimeters) flexure bar specimens used in our previous studies, the thin (2 millimeter) disk target specimen exhibited a unique back-side radial cracking on the reverse side just beneath the impact sites at and above impact velocities of 160 meters per second for SN282 and 220 meters per second AS800.

  5. Development of an aluminum nitride-silicon carbide material set for high-temperature sensor applications

    NASA Astrophysics Data System (ADS)

    Griffin, Benjamin A.; Habermehl, Scott D.; Clews, Peggy J.

    2014-06-01

    A number of important energy and defense-related applications would benefit from sensors capable of withstanding extreme temperatures (>300°C). Examples include sensors for automobile engines, gas turbines, nuclear and coal power plants, and petroleum and geothermal well drilling. Military applications, such as hypersonic flight research, would also benefit from sensors capable of 1000°C. Silicon carbide (SiC) has long been recognized as a promising material for harsh environment sensors and electronics because it has the highest mechanical strength of semiconductors with the exception of diamond and its upper temperature limit exceeds 2500°C, where it sublimates rather than melts. Yet today, many advanced SiC MEMS are limited to lower temperatures because they are made from SiC films deposited on silicon wafers. Other limitations arise from sensor transduction by measuring changes in capacitance or resistance, which require biasing or modulation schemes that can with- stand elevated temperatures. We are circumventing these issues by developing sensing structures directly on SiC wafers using SiC and piezoelectric aluminum nitride (AlN) thin films. SiC and AlN are a promising material combination due to their high thermal, electrical, and mechanical strength and closely matched coefficients of thermal expansion. AlN is also a non-ferroelectric piezoelectric material, enabling piezoelectric transduction at temperatures exceeding 1000°C. In this paper, the challenges of incorporating these two materials into a compatible MEMS fabrication process are presented. The current progress and initial measurements of the fabrication process are shown. The future direction and the need for further investigation of the material set are addressed.

  6. Performance of GaN-on-Si-based vertical light-emitting diodes using silicon nitride electrodes with conducting filaments: correlation between filament density and device reliability.

    PubMed

    Kim, Kyeong Heon; Kim, Su Jin; Lee, Tae Ho; Lee, Byeong Ryong; Kim, Tae Geun

    2016-08-08

    Transparent conductive electrodes with good conductivity and optical transmittance are an essential element for highly efficient light-emitting diodes. However, conventional indium tin oxide and its alternative transparent conductive electrodes have some trouble with a trade-off between electrical conductivity and optical transmittance, thus limiting their practical applications. Here, we present silicon nitride transparent conductive electrodes with conducting filaments embedded using the electrical breakdown process and investigate the dependence of the conducting filament density formed in the transparent conductive electrode on the device performance of gallium nitride-based vertical light-emitting diodes. Three gallium nitride-on-silicon-based vertical light-emitting diodes using silicon nitride transparent conductive electrodes with high, medium, and low conducting filament densities were prepared with a reference vertical light-emitting diode using metal electrodes. This was carried to determine the optimal density of the conducting filaments in the proposed silicon nitride transparent conductive electrodes. In comparison, the vertical light-emitting diodes with a medium conducting filament density exhibited the lowest optical loss, direct ohmic behavior, and the best current injection and distribution over the entire n-type gallium nitride surface, leading to highly reliable light-emitting diode performance.

  7. Extreme value statistics analysis of fracture strengths of a sintered silicon nitride failing from pores

    NASA Technical Reports Server (NTRS)

    Chao, Luen-Yuan; Shetty, Dinesh K.

    1992-01-01

    Statistical analysis and correlation between pore-size distribution and fracture strength distribution using the theory of extreme-value statistics is presented for a sintered silicon nitride. The pore-size distribution on a polished surface of this material was characterized, using an automatic optical image analyzer. The distribution measured on the two-dimensional plane surface was transformed to a population (volume) distribution, using the Schwartz-Saltykov diameter method. The population pore-size distribution and the distribution of the pore size at the fracture origin were correllated by extreme-value statistics. Fracture strength distribution was then predicted from the extreme-value pore-size distribution, usin a linear elastic fracture mechanics model of annular crack around pore and the fracture toughness of the ceramic. The predicted strength distribution was in good agreement with strength measurements in bending. In particular, the extreme-value statistics analysis explained the nonlinear trend in the linearized Weibull plot of measured strengths without postulating a lower-bound strength.

  8. Fuzzy sets predict flexural strength and density of silicon nitride ceramics

    NASA Technical Reports Server (NTRS)

    Cios, Krzysztof J.; Sztandera, Leszek M.; Baaklini, George Y.; Vary, Alex

    1993-01-01

    In this work, we utilize fuzzy sets theory to evaluate and make predictions of flexural strength and density of NASA 6Y silicon nitride ceramic. Processing variables of milling time, sintering time, and sintering nitrogen pressure are used as an input to the fuzzy system. Flexural strength and density are the output parameters of the system. Data from 273 Si3N4 modulus of rupture bars tested at room temperature and 135 bars tested at 1370 C are used in this study. Generalized mean operator and Hamming distance are utilized to build the fuzzy predictive model. The maximum test error for density does not exceed 3.3 percent, and for flexural strength 7.1 percent, as compared with the errors of 1.72 percent and 11.34 percent obtained by using neural networks, respectively. These results demonstrate that fuzzy sets theory can be incorporated into the process of designing materials, such as ceramics, especially for assessing more complex relationships between the processing variables and parameters, like strength, which are governed by randomness of manufacturing processes.

  9. Modification of silicon nitride surfaces with GOPES and APTES for antibody immobilization: computational and experimental studies

    NASA Astrophysics Data System (ADS)

    Dien To, Thien; Nguyen, Anh Tuan; Nhat Thanh Phan, Khoa; Thu Thi Truong, An; Doan, Tin Chanh Duc; Mau Dang, Chien

    2015-12-01

    Chemical modification of silicon nitride (SiN) surfaces by silanization has been widely studied especially with 3-(aminopropyl)triethoxysilane (APTES) and 3-(glycidyloxypropyl) dimethylethoxysilane (GOPES). However few reports performed the experimental and computational studies together. In this study, surface modification of SiN surfaces with GOPES and APTES covalently bound with glutaraldehyde (GTA) was investigated for antibody immobilization. The monoclonal anti-cytokeratin-FITC (MACF) antibody was immobilized on the modified SiN surfaces. The modified surfaces were characterized by water contact angle measurements, atomic force microscopy and fluorescence microscopy. The FITC-fluorescent label indicated the existence of MACF antibody on the SiN surfaces and the efficiency of the silanization reaction. Absorption of APTES and GOPES on the oxidized SiN surfaces was computationally modeled and calculated by Materials Studio software. The computational and experimental results showed that modification of the SiN surfaces with APTES and GTA was more effective than the modification with GOPES.

  10. Two-octave spanning supercontinuum generation in stoichiometric silicon nitride waveguides pumped at telecom wavelengths.

    PubMed

    Porcel, Marco A G; Schepers, Florian; Epping, Jörn P; Hellwig, Tim; Hoekman, Marcel; Heideman, René G; van der Slot, Peter J M; Lee, Chris J; Schmidt, Robert; Bratschitsch, Rudolf; Fallnich, Carsten; Boller, Klaus-J

    2017-01-23

    We demonstrate supercontinuum generation in stoichiometric silicon nitride (Si3N4 in SiO2) integrated optical waveguides, pumped at telecommunication wavelengths. The pump laser is a mode-locked erbium fiber laser at a wavelength of 1.56 µm with a pulse duration of 120 fs. With a waveguide-internal pulse energy of 1.4 nJ and a waveguide with 1.0 µm × 0.9 µm cross section, designed for anomalous dispersion across the 1500 nm telecommunication range, the output spectrum extends from the visible, at around 526 nm, up to the mid-infrared, at least to 2.6 µm, the instrumental limit of our detection. This output spans more than 2.2 octaves (454 THz at the -30 dB level). The measured output spectra agree well with theoretical modeling based on the generalized nonlinear Schrödinger equation. The infrared part of the supercontinuum spectra shifts progressively towards the mid-infrared, well beyond 2.6 µm, by increasing the width of the waveguides.

  11. High-Responsivity Graphene-Boron Nitride Photodetector and Autocorrelator in a Silicon Photonic Integrated Circuit.

    PubMed

    Shiue, Ren-Jye; Gao, Yuanda; Wang, Yifei; Peng, Cheng; Robertson, Alexander D; Efetov, Dmitri K; Assefa, Solomon; Koppens, Frank H L; Hone, James; Englund, Dirk

    2015-11-11

    Graphene and other two-dimensional (2D) materials have emerged as promising materials for broadband and ultrafast photodetection and optical modulation. These optoelectronic capabilities can augment complementary metal-oxide-semiconductor (CMOS) devices for high-speed and low-power optical interconnects. Here, we demonstrate an on-chip ultrafast photodetector based on a two-dimensional heterostructure consisting of high-quality graphene encapsulated in hexagonal boron nitride. Coupled to the optical mode of a silicon waveguide, this 2D heterostructure-based photodetector exhibits a maximum responsivity of 0.36 A/W and high-speed operation with a 3 dB cutoff at 42 GHz. From photocurrent measurements as a function of the top-gate and source-drain voltages, we conclude that the photoresponse is consistent with hot electron mediated effects. At moderate peak powers above 50 mW, we observe a saturating photocurrent consistent with the mechanisms of electron-phonon supercollision cooling. This nonlinear photoresponse enables optical on-chip autocorrelation measurements with picosecond-scale timing resolution and exceptionally low peak powers.

  12. Characterisation of multi-mode propagation in silicon nitride slab waveguides

    NASA Astrophysics Data System (ADS)

    Jennings, B. D.; McCloskey, D.; Gough, J. J.; Hoang, T.; Abadía, N.; Zhong, C.; Karademir, E.; Bradley, A. L.; Donegan, J. F.

    2017-01-01

    A simple experimental method for determining the number of modes in planar dielectric multi-mode waveguides, and the effective index difference of these modes, is presented. Applying a thin, dye-doped polymer cladding, the fluorescence excited by multiple modes propagating in a silicon nitride slab waveguide is imaged to extract information. Interference between the modes produces a structured intensity profile along the waveguide which is constant in time. The spatial frequencies of this intensity profile are directly linked to the propagation constants of the underlying modes. Through a discrete Fourier transform, the modes’ effective index differences are found and compare well with analytically calculated values. Furthermore, the amplitudes in the Fourier transform are directly related to the power in each mode. Comparing the amplitudes of the Fourier components as a function of propagation distance, an estimate of the propagation losses of the individual modes relative to one another is made. The method discussed could be applied to analysing mode behaviour in integrated photonic devices, most notably in mode-division multiplexing.

  13. Frequency comb offset detection using supercontinuum generation in silicon nitride waveguides.

    PubMed

    Mayer, A S; Klenner, A; Johnson, A R; Luke, K; Lamont, M R E; Okawachi, Y; Lipson, M; Gaeta, A L; Keller, U

    2015-06-15

    We present the first direct carrier-envelope-offset (CEO) frequency detection of a modelocked laser based on supercontinuum generation (SCG) in a CMOS-compatible silicon nitride (Si(3)N(4)) waveguide. With a coherent supercontinuum spanning more than 1.5 octaves from visible to beyond telecommunication wavelengths, we achieve self-referencing of SESAM modelocked diode-pumped Yb:CALGO lasers using standard f-to-2f interferometry. We directly obtain without amplification strong CEO beat signals for both a 100-MHz and 1-GHz pulse repetition rate laser. High signal-to-noise ratios (SNR) of > 25 dB and even > 30 dB have been generated with only 30 pJ and 36 pJ of coupled pulse energy from the megahertz and gigahertz laser respectively. We compare these results to self-referencing using a commercial photonic crystal fiber and find that the required peak power for CEO beat detection with a comparable SNR is lowered by more than an order of magnitude when using a Si(3)N(4) waveguide.

  14. Creep of a Silicon Nitride Under Various Specimen/Loading Configurations

    NASA Technical Reports Server (NTRS)

    Choi, Sung R.; Powers, Lynn M.; Holland, Frederic A.; Gyekenyesi, John P.; Holland, F. A. (Technical Monitor)

    2000-01-01

    Extensive creep testing of a hot-pressed silicon nitride (NC132) was performed at 1300 C in air using five different specimen/loading configurations, including pure tension, pure compression, four-point uniaxial flexure, ball-on-ring biaxial flexure, and ring-on-ring biaxial flexure. Nominal creep strain and its rate for a given nominal applied stress were greatest in tension, least in compression, and intermediate in uniaxial and biaxial flexure. Except for the case of compressive loading, nominal creep strain generally decreased with time, resulting in less-defined steady-state condition. Of the four different creep formulations - power-law, hyperbolic sine, step, redistribution models - the conventional power-law model still provides the most convenient and reasonable means to estimate simple, quantitative creep parameters of the material. Predictions of creep deformation for the case of multiaxial stress state (biaxial flexure) were made based on pure tension and compression creep data by using the design code CARES/Creep.

  15. Gigahertz frequency comb offset stabilization based on supercontinuum generation in silicon nitride waveguides.

    PubMed

    Klenner, Alexander; Mayer, Aline S; Johnson, Adrea R; Luke, Kevin; Lamont, Michael R E; Okawachi, Yoshitomo; Lipson, Michal; Gaeta, Alexander L; Keller, Ursula

    2016-05-16

    Silicon nitride (Si3N4) waveguides represent a novel photonic platform that is ideally suited for energy efficient and ultrabroadband nonlinear interactions from the visible to the mid-infrared. Chip-based supercontinuum generation in Si3N4 offers a path towards a fully-integrated and highly compact comb source for sensing and time-and-frequency metrology applications. We demonstrate the first successful frequency comb offset stabilization that utilizes a Si3N4 waveguide for octave-spanning supercontinuum generation and achieve the lowest integrated residual phase noise of any diode-pumped gigahertz laser comb to date. In addition, we perform a direct comparison to a standard silica photonic crystal fiber (PCF) using the same ultrafast solid-state laser oscillator operating at 1 µm. We identify the minimal role of Raman scattering in Si3N4 as a key benefit that allows to overcome the fundamental limitations of silica fibers set by Raman-induced self-frequency shift.

  16. Surface toughness of silicon nitride bioceramics: II, Comparison with commercial oxide materials.

    PubMed

    McEntire, Bryan J; Enomoto, Yuto; Zhu, Wenliang; Boffelli, Marco; Marin, Elia; Pezzotti, Giuseppe

    2016-02-01

    Raman microprobe-assisted indentation, a micromechanics method validated in a companion paper, was used to compare the surface toughening behaviors of silicon nitride (Si3N4) and alumina-based bioceramics employed in joint arthroplasty (i.e., monolithic alumina, Al2O3, and yttria-stabilized zirconia (ZrO2)-toughened alumina, ZTA). Quantitative assessments of microscopic stress fields both ahead and behind the tip of Vickers indentation cracks propagated under increasing indentation loads were systematically made using a Raman microprobe with spatial resolution on the order of a single micrometer. Concurrently, crack opening displacement (COD) profiles were monitored on the same microcracks screened by Raman spectroscopy. The Raman eye clearly visualized different mechanisms operative in toughening Si3N4 and ZTA bioceramics (i.e., crack-face bridging and ZrO2 polymorphic transformation, respectively) as compared to the brittle behavior of monolithic Al2O3. Moreover, emphasis was placed on assessing not only the effectiveness but also the durability of such toughening effects when the biomaterials were aged in a hydrothermal environment. A significant degree of embrittlement at the biomaterial surface was recorded in the transformation-toughened ZTA, with the surface toughness reduced by exposure to the hydrothermal environment. Conversely, the Si3N4 biomaterial experienced a surface toughness value independent of hydrothermal attack. Crack-face bridging thus appears to be a durable surface toughening mechanism for biomaterials in joint arthroplasty.

  17. Atomic Layer Deposition of Silicon Nitride from Bis(tert-butylamino)silane and N2 Plasma.

    PubMed

    Knoops, Harm C M; Braeken, Eline M J; de Peuter, Koen; Potts, Stephen E; Haukka, Suvi; Pore, Viljami; Kessels, Wilhelmus M M

    2015-09-09

    Atomic layer deposition (ALD) of silicon nitride (SiNx) is deemed essential for a variety of applications in nanoelectronics, such as gate spacer layers in transistors. In this work an ALD process using bis(tert-butylamino)silane (BTBAS) and N2 plasma was developed and studied. The process exhibited a wide temperature window starting from room temperature up to 500 °C. The material properties and wet-etch rates were investigated as a function of plasma exposure time, plasma pressure, and substrate table temperature. Table temperatures of 300-500 °C yielded a high material quality and a composition close to Si3N4 was obtained at 500 °C (N/Si=1.4±0.1, mass density=2.9±0.1 g/cm3, refractive index=1.96±0.03). Low wet-etch rates of ∼1 nm/min were obtained for films deposited at table temperatures of 400 °C and higher, similar to that achieved in the literature using low-pressure chemical vapor deposition of SiNx at >700 °C. For novel applications requiring significantly lower temperatures, the temperature window from room temperature to 200 °C can be a solution, where relatively high material quality was obtained when operating at low plasma pressures or long plasma exposure times.

  18. Electromagnetically induced transparency and wideband wavelength conversion in silicon nitride microdisk optomechanical resonators.

    PubMed

    Liu, Yuxiang; Davanço, Marcelo; Aksyuk, Vladimir; Srinivasan, Kartik

    2013-05-31

    We demonstrate optomechanically mediated electromagnetically induced transparency and wavelength conversion in silicon nitride (Si3N4) microdisk resonators. Fabricated devices support whispering gallery optical modes with a quality factor (Q) of 10(6), and radial breathing mechanical modes with a Q=10(4) and a resonance frequency of 625 MHz, so that the system is in the resolved sideband regime. Placing a strong optical control field on the red (blue) detuned sideband of the optical mode produces coherent interference with a resonant probe beam, inducing a transparency (absorption) window for the probe. This is observed for multiple optical modes of the device, all of which couple to the same mechanical mode, and which can be widely separated in wavelength due to the large band gap of Si3N4. These properties are exploited to demonstrate frequency up-conversion and down-conversion of optical signals between the 1300 and 980 nm bands with a frequency span of 69.4 THz.

  19. Fabrication and characterization of silicon nitride directional coupler interferometer for sensing aptamer hybridization

    NASA Astrophysics Data System (ADS)

    Okubo, K.; Uchiyamada, K.; Yokokawa, M.; Asakawa, K.; Suzuki, H.

    2016-03-01

    We used silicon nitride (Si3N4) directional coupler (DC) interferometers to fabricate evanescent field biosensors for detection of aptamer hybridization. The DC detects temporal changes in refractive index (RI) as changes in the relative intensities of near-fields. Numerical simulation provided information for sensitivity of the DC as well as preferable dimensions of single mode waveguides. The result suggests that lengthening the DC improves its sensitivity. Another approach to realize high sensitivity was to make the coupling region of the DC longer for a given complete coupling length Lc. A folded DC is also presented based on calculations using Si waveguides. Here a meander-line with an array of segmented DCs and asymmetric 180°-curved waveguides was accommodated in a (100 μm)2 square area. Phases of propagating lights within two curved waveguides could be coincided. This cascade-connection of the segments of the DCs facilitated highly sensitive detection of biomolecules and a flexible sensor design. Signal dependences on device length and bulk RI change were evaluated by end-fire coupling measurements. The optical intensities agreed well with the corresponding fitting curve and the curve calculated based on the coupled mode theory.

  20. Detection of antibody-antigen reaction by silicon nitride slot-ring biosensors using protein G

    NASA Astrophysics Data System (ADS)

    Taniguchi, Tomoya; Hirowatari, Anna; Ikeda, Takeshi; Fukuyama, Masataka; Amemiya, Yoshiteru; Kuroda, Akio; Yokoyama, Shin

    2016-04-01

    Biosensors using ring resonators with silicon nitride (SiN) slot waveguides have been fabricated. The temperature coefficient of the resonance wavelength of the SiN resonator is 0.006 nm/°C, which is one order of magnitude smaller than that of Si. The sensitivity of the biosensor has been improved by using slot waveguide together with Si-binding protein (designated as Si-tag), which bonds to SiN or SiO2 surface, as an anchoring molecule to immobilize bioreceptors on the SiN rings in an oriented manner. Furthermore, the protein G, which strongly bonds to many kinds of mammalian antibodies only by mixing the antibody solution, is used to efficiently immobilize the antigen on the sensor surface. By means of these devises the sensitivity of the biosensor has been improved by factor of 10-100 compared with that of normal Si ring resonator sensors without slot. Then the detection of prostate specific antigen (PSA) with the sensitivity of ~1×10-8 g/ml, which is the concentration of strongly suspicious for the prostate cancer, has been achieved.

  1. DLTS characterization of silicon nitride passivated AlGaN/GaN heterostructures

    NASA Astrophysics Data System (ADS)

    Mosca, R.; Gombia, E.; Passaseo, A.; Tasco, V.; Peroni, M.; Romanini, P.

    2004-10-01

    Passivating the ungated surface of AlGaN/GaN HEMTs with silicon nitride (SiN) is effective in improving the microwave output power performances of these devices. However, very little information is available about surface states in GaN-based HEMTs after SiN passivation. In this work we investigate AlGaN/GaN HEMTs structures having either metal-semiconductor or metal-SiN-semiconductor gate contacts. In short gate devices conductance DLTS measurements point out a hole-like peak that shows an anomalous behaviour and can be ascribed to surface states in the access regions of the device. In insulated gate HEMTs a band of levels is detected and ascribed to surface states, whose energy ranges from 0.14 to 0.43 eV. Capacitance-voltage measurements allow us to point out the existence of a second band of interface states deeper in energy than the former one. This band is responsible for slow transients observed in the characteristics of the insulated gate FAT-HEMT.

  2. Wideband nonlinear spectral broadening in ultra-short ultra - silicon rich nitride waveguides

    PubMed Central

    Choi, Ju Won; Chen, George F. R.; Ng, D. K. T.; Ooi, Kelvin J. A.; Tan, Dawn T. H.

    2016-01-01

    CMOS-compatible nonlinear optics platforms with high Kerr nonlinearity facilitate the generation of broadband spectra based on self-phase modulation. Our ultra – silicon rich nitride (USRN) platform is designed to have a large nonlinear refractive index and low nonlinear losses at 1.55 μm for the facilitation of wideband spectral broadening. We investigate the ultrafast spectral characteristics of USRN waveguides with 1-mm-length, which have high nonlinear parameters (γ ∼ 550 W−1/m) and anomalous dispersion at 1.55 μm wavelength of input light. USRN add-drop ring resonators broaden output spectra by a factor of 2 compared with the bandwidth of input fs laser with the highest quality factors of 11000 and 15000. Two – fold self phase modulation induced spectral broadening is observed using waveguides only 430 μm in length, whereas a quadrupling of the output bandwidth is observed with USRN waveguides with a 1-mm-length. A broadening factor of around 3 per 1 mm length is achieved in the USRN waveguides, a value which is comparatively larger than many other CMOS-compatible platforms. PMID:27272558

  3. Vertical coupling of laser glass microspheres to buried silicon nitride ellipses and waveguides

    SciTech Connect

    Navarro-Urrios, D.; Ramírez, J. M.; Berencén, Y.; Garrido, B.; Capuj, N. E.; Tredicucci, A.

    2015-09-07

    We demonstrate the integration of Nd{sup 3+} doped barium-titanium-silicate microsphere lasers with a silicon nitride photonic platform. Devices with two different geometrical configurations for extracting the laser light to buried waveguides have been fabricated and characterized. The first configuration relies on a standard coupling scheme, where the microspheres are placed over strip waveguides. The second is based on a buried elliptical geometry whose working principle is that of an elliptical mirror. In the latter case, the input of a strip waveguide is placed on one focus of the ellipse, while a lasing microsphere is placed on top of the other focus. The fabricated elliptical geometry (ellipticity = 0.9) presents a light collecting capacity that is 50% greater than that of the standard waveguide coupling configuration and could be further improved by increasing the ellipticity. Moreover, since the dimensions of the spheres are much smaller than those of the ellipses, surface planarization is not required. On the contrary, we show that the absence of a planarization step strongly damages the microsphere lasing performance in the standard configuration.

  4. Crack stability and its effect on fracture toughness of hot-pressed silicon nitride beam specimens

    SciTech Connect

    Bar-On, I.; Baratta, F.I.; Cho, K.

    1996-09-01

    The effect of stable crack extension on fracture toughness test results was determined using single-edge precracked beam specimens. Crack growth stability was examined theoretically for bars loaded in three-point bending under displacement control. The calculations took into account the stiffness of both the specimen and the loading system. The results indicated that the stiffness of the testing system played a major role in crack growth stability. Accordingly, a test system and specimen dimensions were selected which would result in unstable or stable crack extension during the fracture toughness test, depending on the exact test conditions. Hot-pressed silicon nitride bend bars (NC132) were prepared with precracks of different lengths, resulting in specimens with different stiffnesses. The specimens with the shorter precracks and thus higher stiffness broke without stable crack extension, while those with longer cracks, and lower stiffness, broke after some stable crack extension. The fracture toughness values from the unstable tests were 10% higher than those from the stable tests. This difference, albeit small, is systematic and is not considered to be due to material or specimen-to-specimen variation. It is concluded that instability due to the stiffness of test system and specimen must be minimized to ensure some stable crack extension in a fracture toughness test of brittle materials in order to avoid inflated fracture toughness values.

  5. Fabrication of Silicon Nitride Dental Core Ceramics with Borosilicate Veneering material

    NASA Astrophysics Data System (ADS)

    Wananuruksawong, R.; Jinawath, S.; Padipatvuthikul, P.; Wasanapiarnpong, T.

    2011-10-01

    Silicon nitride (Si3N4) ceramic is a great candidate for clinical applications due to its high fracture toughness, strength, hardness and bio-inertness. This study has focused on the Si3N4 ceramic as a dental core material. The white Si3N4 was prepared by pressureless sintering at relative low sintering temperature of 1650 °C in nitrogen atmosphere. The coefficient of thermal expansion (CTE) of Si3N4 ceramic is lower than that of Zirconia and Alumina ceramic which are popular in this field. The borosilicate glass veneering was employed due to its compatibility in thermal expansion. The sintered Si3N4 specimens represented the synthetic dental core were paintbrush coated by a veneer paste composed of borosilicate glass powder (<150 micrometer, Pyrex) with 5 wt% of zirconia powder (3 wt% Y2O3 - partial stabilized zirconia) and 30 wt% of polyvinyl alcohol (5 wt% solution). After coating the veneer on the Si3N4 specimens, the firing was performed in electric tube furnace between 1000-1200°C. The veneered specimens fired at 1100°C for 15 mins show good bonding, smooth and glossy without defect and crazing. The veneer has thermal expansion coefficient as 3.98×10-6 °C-1, rather white and semi opaque, due to zirconia addition, the Vickers hardness as 4.0 GPa which is closely to the human teeth.

  6. Correlation between the mechanical stress and microstructure in reactive bias magnetron sputtered silicon nitride films

    SciTech Connect

    Kim, J.H.; Lee, W.S.; Chung, K.W.

    1998-12-31

    The influence of ion bombardment on the mechanical stress and microstructure of sputtered silicon nitride (SiN{sub x}) films has been systematically investigated. Applied substrate bias voltage was used to control the bombardment energy in a radio frequency (rf) reactive magnetron sputtering system. The resultant films were characterized by transmission electron microscopy (TEM), atomic force microscopy (AFM), Fourier transform infrared spectroscopy (FT-IR), Rutherford backscattering spectrometry (RBS), stress and chemical etch rate measurements. As the bias voltage was increased, the internal stress in SiN{sub x} films became increasingly compressive and reached a value of about 18.3 {times} 10{sup 9} dyne cm{sup 2} at higher bias voltages. These correlated well with the transition of the film microstructure from a porous microcolumnar structure containing large void to the more densely packed one. The obtained results can be explained in terms of atomic peening by energetic particles, leading to densification of the microstructure. It was also found that the amount of argon incorporated in the film is increased with increasing bias voltage, whereas the oxygen content is decreased. The lowest etch rate in buffered HF solution, approximately 1.2 {angstrom}/sec, was observed with the application of a substrate bias of {minus}50 V.

  7. Ultra-thin superconducting film coated silicon nitride nanowire resonators for low-temperature applications

    NASA Astrophysics Data System (ADS)

    Sebastian, Abhilash; Zhelev, Nikolay; de Alba, Roberto; Parpia, Jeevak

    We demonstrate fabrication of high stress silicon nitride nanowire resonators with a thickness and width of less than 50 nm intended to be used as probes for the study of superfluid 3He. The resonators are fabricated as doubly-clamped wires/beams using a combination of electron-beam lithography and wet/dry etching techniques. We demonstrate the ability to suspend (over a trench of depth ~8 µm) wires with a cross section as small as 30 nm, covered with a 20 nm superconducting film, and having lengths up to 50 µm. Room temperature resonance measurements were carried out by driving the devices using a piezo stage and detecting the motion using an optical interferometer. The results show that metalizing nano-mechanical resonators not only affects their resonant frequencies but significantly reduce their quality factor (Q). The devices are parametrically pumped by modulating the system at twice its fundamental resonant frequency, which results in observed amplification of the signal. The wires show self-oscillation with increasing modulation strength. The fabricated nanowire resonators are intended to be immersed in the superfluid 3He. By tracking the resonant frequency and the Q of the various modes of the wire versus temperature, we aim to probe the superfluid gap structure.

  8. Gelcasting of sub-micron alumina, sialon, and silicon nitride powders

    SciTech Connect

    Omatete, O.O.; Strehlow, R.A.; Walls, C.A.

    1990-01-01

    Gelcasting is a near-net-shape forming technique that is applicable to various types of powders. It is accomplished by casting a concentrated suspension of a commercial ceramic powder in a solution of a polymerizable monomer and then polymerizing. A filled gel is formed, which is dried and processed further. Alumina, sialon, and silicon nitride parts of various geometries have been made and are described. Emphasis is placed on the unit-operations of the process. Because a requirement of the process is a castable suspension of more than 50 vol % solids loading, good dispersion is crucial. Drying, another key process, has been studied extensively. Shrinkage from the cast size occurs during drying and further shrinkage occurs during sintering. Data on the relationship of physical properties of products to some of the more significant processing variables is discussed. Emphasis is also placed on the machinability of the dried gelled body. Because the body at this stage is quite durable, green part machining is feasible. The monomer used in the process is acrylamide, which undergoes a vinyl polymerization. Environmental, safety and hygiene issues are summarized. 9 refs., 6 figs.

  9. Evaluation of silicon nitride as a wear resistant and resorbable alternative for total hip joint replacement

    PubMed Central

    Olofsson, Johanna; Grehk, T. Mikael; Berlind, Torun; Persson, Cecilia; Jacobson, Staffan; Engqvist, Håkan

    2012-01-01

    Many of the failures of total joint replacements are related to tribology, i.e., wear of the cup, head and liner. Accumulation of wear particles at the implants can be linked to osteolysis which leads to bone loss and in the end aseptic implant loosening. Therefore it is highly desirable to reduce the generation of wear particles from the implant surfaces. Silicon nitride (Si3N4) has shown to be biocompatible and have a low wear rate when sliding against itself and is therefore a good candidate as a hip joint material. Furthermore, wear particles of Si3N4 are predicted to slowly dissolve in polar liquids and they therefore have the potential to be resorbed in vivo, potentially reducing the risk for aseptic loosening. In this study, it was shown that α-Si3N4-powder dissolves in PBS. Adsorption of blood plasma indicated a good acceptance of Si3N4 in the body with relatively low immune response. Si3N4 sliding against Si3N4 showed low wear rates both in bovine serum and PBS compared with the other tested wear couples. Tribofilms were built up on the Si3N4 surfaces both in PBS and in bovine serum, controlling the friction and wear characteristics. PMID:23507807

  10. Joining and Integration of Silicon Nitride Ceramics for Aerospace and Energy Systems

    NASA Technical Reports Server (NTRS)

    Singh, M.; Asthana, R.

    2009-01-01

    Light-weight, creep-resistant silicon nitride ceramics possess excellent high-temperature strength and are projected to significantly raise engine efficiency and performance when used as turbine components in the next-generation turbo-shaft engines without the extensive cooling that is needed for metallic parts. One key aspect of Si3N4 utilization in such applications is its joining response to diverse materials. In an ongoing research program, the joining and integration of Si3N4 ceramics with metallic, ceramic, and composite materials using braze interlayers with the liquidus temperature in the range 750-1240C is being explored. In this paper, the self-joining behavior of Kyocera Si3N4 and St. Gobain Si3N4 using a ductile Cu-based active braze (Cu-ABA) containing Ti will be presented. Joint microstructure, composition, hardness, and strength as revealed by optical microscopy, scanning electron microscopy (SEM), energy dispersive spectroscopy (EDS), Knoop microhardness test, and offset compression shear test will be presented. Additionally, microstructure, composition, and joint strength of Si3N4/Inconel 625 joints made using Cu-ABA, will be presented. The results will be discussed with reference to the role of chemical reactions, wetting behavior, and residual stresses in joints.

  11. Effect of cyclic loading on the creep performance of silicon nitride

    SciTech Connect

    Wereszczak, A.A.; Ferber, M.K.; Kirkland, T.P.; Lin, C.K.J.

    1995-04-01

    Tension-tension cyclic fatigue tests (triangular waveform, {sigma}{sub max} = 100 MPa, R = 0.1) were conducted on hot isostatically pressed (HIPed) silicon nitride at frequencies spanning several orders of magnitude (5.6 {times} 10{sup {minus}6} to 0.1 Hz or 10{sup {minus}3} MPa/s to 18 MPa/s) at 1,370 C in air. The amount of cyclic creep strain was found to be a function of the frequency or stressing rate with greater strains to failure observed as the frequency or stressing rate decreased. The total strain was viewed as the sum of elastic, anelastic (or transient recoverable), and plastic (viscous or non-recoverable) strain contributions, after the empirical Pao and Marin model. The plastic strain was found to be the dominant component of the total creep and was unsatisfactorily represented by the Pao and Marin model. To circumvent this, a time exponent was introduced in the plastic strain term in the Pao and Marin model. This modification resulted in good correlation between model and experiment at the slower frequencies examined but over-predicted the cyclic creep strain at the faster frequencies. The utility of using the modified Pao and Marin model to predict cyclic creep response from static creep and strain relaxation tests is described.

  12. Cross-polarization confocal imaging of subsurface flaws in silicon nitride.

    SciTech Connect

    Liu, Z.; Sun, J. G.; Pei, Z.

    2011-03-01

    A cross-polarization confocal microscopy (CPCM) method was developed to image subsurface flaws in optically translucent silicon nitride (Si{sub 3}N{sub 4}) ceramics. Unlike conventional confocal microscopy, which measures reflected light so is applicable only to transparent and semi-transparent materials, CPCM detects scattered light from subsurface while filtering out the reflected light from ceramic surface. For subsurface imaging, the refractive-index mismatch between imaging (air) and imaged (ceramic) medium may cause image distortion and reduce resolution in the depth direction. This effect, characterized by an axial scaling factor (ASF), was analyzed and experimentally determined for glass and Si{sub 3}N{sub 4} materials. The experimental CPCM system was used to image Hertzian C-cracks generated by various indentation loads in the subsurface of a Si{sub 3}N{sub 4} specimen. It was demonstrated that CPCM may provide detailed information of subsurface cracks, such as crack angle and path, and subsurface microstructural variations.

  13. Evidence that small proteins translocate through silicon nitride pores in a folded conformation

    NASA Astrophysics Data System (ADS)

    Stefureac, Radu I.; Trivedi, Dhruti; Marziali, Andre; Lee, Jeremy S.

    2010-11-01

    The interaction of three proteins (histidine-containing phosphocarrier protein, HPr, calmodulin, CaM, and maltose binding protein, MBP) with synthetic silicon nitride (SiNx) membranes has been studied. The proteins which have a net negative charge were electrophoretically driven into pores of 7 and 5 nm diameter with a nominal length of 15 nm. The % blockade current and event duration were measured at three different voltages. For a translocation event it was expected that the % block would be constant with voltage whilst the event duration would decrease with increasing voltage. On the basis of these criteria, we deduce that MBP whose largest dimension is 6.5 nm does not translocate whereas up to 40% of CaM molecules can translocate the 7 nm pore as can a majority of HPr molecules, with some translocations being observed for the 5 nm pore. For translocation events the magnitude of the % blockade current is consistent with a folded conformation of the proteins surrounded by a hydration shell of 0.5-1.0 nm.

  14. Crack-Growth Resistance of in Situ-Toughened Silicon Nitride

    NASA Technical Reports Server (NTRS)

    Salem, Jonathan A.; Choi, Sung, R.

    1994-01-01

    The fracture toughness of a commercial, hot-pressed, in situ-toughened silicon nitride with an elongated grain structure is determined by four different testing methods. The fracture toughness is found to be 5.76 +/- 0.27, 8.48 +/- 0.50, 10.16 +/- 0.66, and 10.68 +/- 0.39 MPa x m(exp 1/2), respectively, by indentation crack size measurement, indentation strength, single-edge-precracked-beam, and chevron-notched-beam methods. The discrepancy in fracture toughness between the testing methods is related to R-curve behavior, as measured using the indentation strength technique. These results indicate that there is no unique fracture toughness value and that a fracture toughness testing method with appropriate qualifiers is needed for rising R-curve materials. Therefore, care should be taken in interpreting and utilizing fracture toughness values evaluated from different testing methods if a material exhibits a rising R-curve. Complete characterization of the R-curve may be a prerequisite.

  15. Chemical vapor deposition of titanium{endash}silicon{endash}nitride films

    SciTech Connect

    Smith, P.M.; Custer, J.S.

    1997-06-01

    Titanium{endash}silicon{endash}nitride films were grown by metal-organic chemical vapor deposition. At temperatures between 300 and 450{degree}C, tetrakis(diethylamido)titanium, ammonia, and silane react to form films with average compositions near the TiN{endash}Si{sub 3}N{sub 4} tie line and low impurity contents (C{lt}1.5at.{percent}, H between 5 and 15 at.{percent}, with no other impurities present). The film resistivity is a strong function of Si content in the films, ranging continuously from 400 {mu}{Omega}cm for pure TiN up to 1 {Omega}cm for films with 25 at.{percent} Si. Step coverages of approximately 75{percent} on 0.35 {mu}m, 3:1 aspect ratio trenches, and 35{percent}{endash}40{percent} on 0.1{mu}m/10:1 trenches are found for films with resistivities below 1000 {mu}{Omega}cm. These films are promising candidates for diffusion barriers in microelectronic applications. {copyright} {ital 1997 American Institute of Physics.}

  16. ECR plasma synthesis of silicon nitride films on GaAs and InSb

    SciTech Connect

    Barbour, J.C.; Lovejoy, M.L.; Ashby, C.I.H.; Howard, A.J.; Custer, J.S.; Shul, R.J.

    1993-12-31

    Growth of high-quality dielectric films from Electron Cyclotron Resonance (ECR) plasmas provides for low-temperature surface passivation of compound semiconductors. Silicon nitride (SiN{sub x}) films were grown at temperatures from 30 to 250 C on GaAs substrates. Stress in films was measured as a function of bias applied during growth (varied from 0 to 200 V), and of sample annealing treatments. Composition profiles of the samples were measured using ion beam analysis. The GaAs photoluminescence (PL) signal after SiN{sub x} growth without an applied bias (ion energy {congruent}30 eV) was twice as large as the PL signal from the cleaned GaAs substrate. The PL signal from samples biased at -50 and -100 V indicated that damage degraded the passivation quality, while atomic force microscopy of these samples showed a three fold increase in rms surface roughness relative to unbiased samples. The sample grown with a bias of -200 V showed the largest reduction in film stress but also the smallest PL signal.

  17. Crystallization of grain boundary phases in silicon nitride with low additive contents by microwave annealing

    SciTech Connect

    Tiegs, T.N.; Ploetz, K.L.; Kiggans, J.O.; Yeckley, R.L.

    1993-06-01

    Microwave annealing of dense Si{sub 3}N{sub 4}-4% Y{sub 2}O{sub 3} materials showed improvements over conventional heating. Increases in fracture toughness were observed for annealing between 1200--1650C. The high temperature strength was related to the residual {alpha}-Si{sub 3}N{sub 4} content which is indicative of a finer average grain size in the specimens. The high temperature dynamic fatigue showed increased stress to failure for specimens microwave annealed between 1400--1550C for periods >5 h. Silicon nitrides with different sintering additives would require different conditions for optimum crystallization. While there were some observed property improvements, they were not so dramatic to justify abandoning conventional over microwave heating. The Si{sub 3}N{sub 4}-4% Y{sub 2}O{sub 3} materials used in the study were developed for elevated temperature use and already posses excellent good high temperature strength, fatigue resistance and creep properties. This is due to the very refractory nature of the grain boundary phases and the small quantity of secondary phase present. However, microwave annealing of these materials may be necessary in applications where the maximum in fracture toughness and fatigue resistance are required and thus justifies its use.

  18. Towards a high performing UV-A sensor based on Silicon Carbide and hydrogenated Silicon Nitride absorbing layers

    NASA Astrophysics Data System (ADS)

    Mazzillo, M.; Sciuto, A.; Mannino, G.; Renna, L.; Costa, N.; Badalà, P.

    2016-10-01

    Exposure to ultraviolet (UV) radiation is a major risk factor for most skin cancers. The sun is our primary natural source of UV radiation. The strength of the sun's ultraviolet radiation is expressed as Solar UV Index (UVI). UV-A (320-400 nm) and UV-B (290-320 nm) rays mostly contribute to UVI. UV-B is typically the most destructive form of UV radiation because it has enough energy to cause photochemical damage to cellular DNA. Also overexposure to UV-A rays, although these are less energetic than UV-B photons, has been associated with toughening of the skin, suppression of the immune system, and cataract formation. The use of preventive measures to decrease sunlight UV radiation absorption is fundamental to reduce acute and irreversible health diseases to skin, eyes and immune system. In this perspective UV sensors able to monitor in a monolithic and compact chip the UV Index and relative UV-A and UV-B components of solar spectrum can play a relevant role for prevention, especially in view of the integration of these detectors in close at hand portable devices. Here we present the preliminary results obtained on our UV-A sensor technology based on the use of hydrogenated Silicon Nitride (SiN:H) thin passivating layers deposited on the surface of thin continuous metal film Ni2Si/4H-SiC Schottky detectors, already used for UV-Index monitoring. The first UV-A detector prototypes exhibit a very low leakage current density of about 0.2 pA/mm2 and a peak responsivity value of 0.027 A/W at 330 nm, both measured at 0V bias.

  19. Hexagonal Ag nanoarrays induced enhancement of blue light emission from amorphous oxidized silicon nitride via localized surface plasmon coupling.

    PubMed

    Ma, Zhongyuan; Ni, Xiaodong; Zhang, Wenping; Jiang, Xiaofan; Yang, Huafeng; Yu, Jie; Wang, Wen; Xu, Ling; Xu, Jun; Chen, Kunji; Feng, Duan

    2014-11-17

    A significant enhancement of blue light emission from amorphous oxidized silicon nitride (a-SiNx:O) films is achieved by introduction of ordered and size-controllable arrays of Ag nanoparticles between the silicon substrate and a-SiNx:O films. Using hexagonal arrays of Ag nanoparticles fabricated by nanosphere lithography, the localized surface plasmons (LSPs) resonance can effectively increase the internal quantum efficiency from 3.9% to 13.3%. Theoretical calculation confirms that the electromagnetic field-intensity enhancement is through the dipole surface plasma coupling with the excitons of a-SiNx:O films, which demonstrates a-SiNx:O films with enhanced blue emission are promising for silicon-based light-emitting applications by patterned Ag arrays.

  20. Efficient continuous-wave nonlinear frequency conversion in high-Q gallium nitride photonic crystal cavities on silicon

    NASA Astrophysics Data System (ADS)

    Mohamed, Mohamed Sabry; Simbula, Angelica; Carlin, Jean-François; Minkov, Momchil; Gerace, Dario; Savona, Vincenzo; Grandjean, Nicolas; Galli, Matteo; Houdré, Romuald

    2017-03-01

    We report on nonlinear frequency conversion from the telecom range via second harmonic generation (SHG) and third harmonic generation (THG) in suspended gallium nitride slab photonic crystal (PhC) cavities on silicon, under continuous-wave resonant excitation. Optimized two-dimensional PhC cavities with augmented far-field coupling have been characterized with quality factors as high as 4.4 × 104, approaching the computed theoretical values. The strong enhancement in light confinement has enabled efficient SHG, achieving a normalized conversion efficiency of 2.4 × 10-3 W-1, as well as simultaneous THG. SHG emission power of up to 0.74 nW has been detected without saturation. The results herein validate the suitability of gallium nitride for integrated nonlinear optical processing.

  1. Blue--green to near-IR switching electroluminescence from Si-rich silicon oxide/nitride bilayer structures

    NASA Astrophysics Data System (ADS)

    Berencén, Y.; Jambois, O.; Ramírez, J. M.; Rebled, J. M.; Estradé, S.; Peiró, F.; Domínguez, C.; Rodríguez, J. A.; Garrido, B.

    2011-07-01

    Blue--green to near-IR switching electroluminescence (EL) has been achieved in a metal-oxide-semiconductor light emitting device, where the dielectric has been replaced by a Si-rich silicon oxide/nitride bilayer structure. To form Si nanostructures, the layers were implanted with Si ions at high energy, resulting in a Si excess of 19%, and subsequently annealed at 1000°C. Transmission electron microscopy and EL studies allowed ascribing the blue--green emission to the Si nitride related defects and the near-IR band with the emission of the Si-nanoclusters embedded into the SiO2 layer. Charge transport analysis is reported and allows for identifying the origin of this two-wavelength switching effect.

  2. Effects of Interface Coating and Nitride Enhancing Additive on Properties of Hi-Nicalon SiC Fiber Reinforced Reaction-Bonded Silicon Nitride Composites

    NASA Technical Reports Server (NTRS)

    Bhatt, Ramakrishana T.; Hull, David R.; Eldridge, Jeffrey I.; Babuder, Raymond

    2000-01-01

    Strong and tough Hi-Nicalon SiC fiber reinforced reaction-bonded silicon nitride matrix composites (SiC/ RBSN) have been fabricated by the fiber lay-up approach. Commercially available uncoated and PBN, PBN/Si-rich PBN, and BN/SiC coated SiC Hi-Nicalon fiber tows were used as reinforcement. The composites contained approximately 24 vol % of aligned 14 micron diameter SiC fibers in a porous RBSN matrix. Both one- and two-dimensional composites were characterized. The effects of interface coating composition, and the nitridation enhancing additive, NiO, on the room temperature physical, tensile, and interfacial shear strength properties of SiC/RBSN matrix composites were evaluated. Results indicate that for all three coated fibers, the thickness of the coatings decreased from the outer periphery to the interior of the tows, and that from 10 to 30 percent of the fibers were not covered with the interface coating. In the uncoated regions, chemical reaction between the NiO additive and the SiC fiber occurs causing degradation of tensile properties of the composites. Among the three interface coating combinations investigated, the BN/SiC coated Hi-Nicalon SiC fiber reinforced RBSN matrix composite showed the least amount of uncoated regions and reasonably uniform interface coating thickness. The matrix cracking stress in SiC/RBSN composites was predicted using a fracture mechanics based crack bridging model.

  3. Galvanic corrosion of structural non-stoichiometric silicon nitride thin films and its implications on reliability of microelectromechanical devices

    SciTech Connect

    Broas, M. Mattila, T. T.; Paulasto-Kröckel, M.; Liu, X.; Ge, Y.

    2015-06-28

    This paper describes a reliability assessment and failure analysis of a poly-Si/non-stoichiometric silicon nitride thin film composite structure. A set of poly-Si/SiN{sub x} thin film structures were exposed to a mixed flowing gas (MFG) environment, which simulates outdoor environments, for 90 days, and an elevated temperature and humidity (85 °C/95% R.H.) test for 140 days. The mechanical integrity of the thin films was observed to degrade during exposure to the chemically reactive atmospheres. The degree of degradation was analyzed with nanoindentation tests. Statistical analysis of the forces required to initiate a fracture in the thin films indicated degradation due to the exposure to the MFG environment in the SiN{sub x} part of the films. Scanning electron microscopy revealed a porous-like reaction layer on top of SiN{sub x}. The morphology of the reaction layer resembled that of galvanically corroded poly-Si. Transmission electron microscopy further clarified the microstructure of the reaction layer which had a complex multi-phase structure extending to depths of ∼100 nm. Furthermore, the layer was oxidized two times deeper in a 90 days MFG-tested sample compared to an untested reference. The formation of the layer is proposed to be caused by galvanic corrosion of elemental silicon in non-stoichiometric silicon nitride during hydrofluoric acid etching. The degradation is proposed to be due uncontrolled oxidation of the films during the stress tests.

  4. Galvanic corrosion of structural non-stoichiometric silicon nitride thin films and its implications on reliability of microelectromechanical devices

    NASA Astrophysics Data System (ADS)

    Broas, M.; Liu, X.; Ge, Y.; Mattila, T. T.; Paulasto-Kröckel, M.

    2015-06-01

    This paper describes a reliability assessment and failure analysis of a poly-Si/non-stoichiometric silicon nitride thin film composite structure. A set of poly-Si/SiNx thin film structures were exposed to a mixed flowing gas (MFG) environment, which simulates outdoor environments, for 90 days, and an elevated temperature and humidity (85 °C/95% R.H.) test for 140 days. The mechanical integrity of the thin films was observed to degrade during exposure to the chemically reactive atmospheres. The degree of degradation was analyzed with nanoindentation tests. Statistical analysis of the forces required to initiate a fracture in the thin films indicated degradation due to the exposure to the MFG environment in the SiNx part of the films. Scanning electron microscopy revealed a porous-like reaction layer on top of SiNx. The morphology of the reaction layer resembled that of galvanically corroded poly-Si. Transmission electron microscopy further clarified the microstructure of the reaction layer which had a complex multi-phase structure extending to depths of ˜100 nm. Furthermore, the layer was oxidized two times deeper in a 90 days MFG-tested sample compared to an untested reference. The formation of the layer is proposed to be caused by galvanic corrosion of elemental silicon in non-stoichiometric silicon nitride during hydrofluoric acid etching. The degradation is proposed to be due uncontrolled oxidation of the films during the stress tests.

  5. A nanoporous silicon nitride membrane using a two-step lift-off pattern transfer with thermal nanoimprint lithography

    NASA Astrophysics Data System (ADS)

    Nabar, Bhargav P.; Çelik-Butler, Zeynep; Dennis, Brian H.; Billo, Richard E.

    2012-04-01

    Nanoimprint lithography is emerging as a viable contender for fabrication of large-scale arrays of 5-500 nm features. A fabrication process for the realization of thin nanoporous membranes using thermal nanoimprint lithography is presented. Suspended silicon nitride membranes were fabricated by low-pressure chemical vapor deposition (LPCVD) in conjunction with a potassium hydroxide-based bulk micromachining process. Nanoscale features were imprinted into a commercially available thermoplastic polymer resist using a prefabricated silicon mold. The pattern was reversed and transferred to a thin aluminum oxide layer by means of a novel two-stage lift-off technique. The patterned aluminum oxide was used as an etch mask in a CHF3/He-based reactive ion etch process to transfer the pattern to silicon nitride. Highly directional etch profiles with near vertical sidewalls and excellent Si3N4/Al2O3 etch selectivity were observed. One micrometer thick porous membranes with varying dimensions of 250 × 250 µm2 to 450 × 450 µm2 and a pore diameter of 400 nm have been engineered and evaluated. Results indicate that the membranes have consistent nanopore dimensions and precisely defined porosity, which makes them ideal as gas exchange interfaces in blood oxygenation systems as well as other applications such as dialysis.

  6. Low temperature silicon nitride by hot wire chemical vapour deposition for the use in impermeable thin film encapsulation on flexible substrates.

    PubMed

    Spee, D A; van der Werf, C H M; Rath, J K; Schropp, R E I

    2011-09-01

    High quality non porous silicon nitride layers were deposited by hot wire chemical vapour deposition at substrate temperatures lower than 110 degrees C. The layer properties were investigated using FTIR, reflection/transmission measurements and 1:6 buffered HF etching rate. A Si-H peak position of 2180 cm(-1) in the Fourier transform infrared absorption spectrum indicates a N/Si ratio around 1.2. Together with a refractive index of 1.97 at a wavelength of 632 nm and an extinction coefficient of 0.002 at 400 nm, this suggests that a transparent high density silicon nitride material has been made below 110 degrees C, which is compatible with polymer films and is expected to have a high impermeability. To confirm the compatibility with polymer films a silicon nitride layer was deposited on poly(glycidyl methacrylate) made by initiated chemical vapour deposition, resulting in a highly transparent double layer.

  7. Task 6.6 - Sialon Coatings for Alkali-Resistant Silicon Nitride: Semi-annual report, July 1-December 31, 1996

    SciTech Connect

    Nowok, J.W.

    1997-12-31

    The efficiency of a gas turbine can be improved by increasing operating temperature. Construction materials should meet both high strength requirements and hot-alkali corrosion resistance. Structural ceramics based on silicon nitride are promising candidates for high temperature engineering applications because of their high strength and good resistance to corrosion. Their performance varies significantly with the mechanical properties of boundary phases which, in turn, depend on their chemical composition, thickness of the amorphous phase, and the deformation process. To make silicon nitride ceramics tough, SiAlON ceramics were developed with controlled crystallization of the amorphous grain boundary phase. Crystallization of the grain boundary glass improves the high temperature mechanical properties of silicon nitride ceramics.

  8. Strength testing of Ti-vapor-coated silicon nitride braze joints

    SciTech Connect

    Santella, M.L.

    1994-09-01

    Sintered silicon nitride was vacuum brazed to itself at 1130{degree}C with a Au-25Ni-25Pd wt % filler metal. Wetting was obtained by coating the Si{sub 3}N{sub 4} surfaces with titanium prior to brazing by electron beam evaporation. The brazed joints were virtually free of porosity. Metallographic analysis showed that Ti reacted with the Si{sub 3}N{sub 4}, to form a TiN reaction layer during brazing. Small amounts of Si and Ti dissolved in the filler metal layers but they did not appear to influence the mechanical properties of the braze layer. Flexure bars were made from the brazed coupons and tested at room temperature, 600C, 700C, and 800C in air. At 700C and below, fracture of the test bars occurred in the Si{sub 3}N{sub 4}, either near the brazed surfaces or at some distance into the monolithic material. The measured strength of joint specimens decreased slightly with increasing test temperature, and generally exceeded the intrinsic braze filler metal strength in this temperature range. It was also found that lapping the Si{sub 3}N{sub 4}, prior to Ti coating reduced the number of near-surface flaws and produced joints with higher average strength and lower scatter than those left in a ground condition. Specimens tested at 800C had very low strengths, and this behavior was related to the microstructure at the brazed Si{sub 3}N{sub 4} surfaces.

  9. Performance improvement of silicon nitride ball bearings by ion implantation. CRADA final report

    SciTech Connect

    Williams, J.M.; Miner, J.

    1998-03-01

    The present report summarizes technical results of CRADA No. ORNL 92-128 with the Pratt and Whitney Division of United Technologies Corporation. The stated purpose of the program was to assess the 3effect of ion implantation on the rolling contact performance of engineering silicon nitride bearings, to determine by post-test analyses of the bearings the reasons for improved or reduced performance and the mechanisms of failure, if applicable, and to relate the overall results to basic property changes including but not limited to swelling, hardness, modulus, micromechanical properties, and surface morphology. Forty-two control samples were tested to an intended runout period of 60 h. It was possible to supply only six balls for ion implantation, but an extended test period goal of 150 h was used. The balls were implanted with C-ions at 150 keV to a fluence of 1.1 {times} 10{sup 17}/cm{sup 2}. The collection of samples had pre-existing defects called C-cracks in the surfaces. As a result, seven of the control samples had severe spalls before reaching the goal of 60 h for an unacceptable failure rate of 0.003/sample-h. None of the ion-implanted samples experienced engineering failure in 150 h of testing. Analytical techniques have been used to characterize ion implantation results, to characterize wear tracks, and to characterize microstructure and impurity content. In possible relation to C-cracks. It is encouraging that ion implantation can mitigate the C-crack failure mode. However, the practical implications are compromised by the fact that bearings with C-cracks would, in no case, be acceptable in engineering practice, as this type of defect was not anticipated when the program was designed. The most important reason for the use of ceramic bearings is energy efficiency.

  10. Laminate behavior for SiC fiber-reinforced reaction-bonded silicon nitride matrix composites

    NASA Technical Reports Server (NTRS)

    Bhatt, Ramakrishna T.; Phillips, Ronald E.

    1990-01-01

    The room temperature mechanical properties of SiC fiber reinforced reaction-bonded silicon nitride matrix composite laminates (SiC/RBSN) have been measured. The laminates contained approx 30 volume fraction of aligned 142-micron diameter SiC fiber in a porous RBSN matrix. Three types of laminate studied were unidirectional: (1) (0) sub 8, (2) (10) sub 8, and (3) (45) sub 8, and (90) sub 8; cross plied laminates (0 sub 2/90 sub 2); and angle plied laminates: (+45 sub 2/-45 sub 2). Each laminate contained eight fiber plies. Results of the unidirectionally reinforced composites tested at various angles to the reinforcement direction indicate large anisotropy in in-plane properties. In addition, strength properties of these composites along the fiber direction were independent of specimen gage length and were unaffected by notches normal to the fiber direction. Splitting parallel to the fiber at the notch tip appears to be the dominant crack blunting mechanism responsible for notch insensitive behavior of these composites. In-plane properties of the composites can be improved by 2-D laminate construction. Mechanical property results for (0 sub 2/90 sub 2) sub s and (+45/-45 sub 2) sub s laminates showed that their matrix failure strains were similar to that for (0) sub 8 laminates, but their primary elastic moduli, matrix cracking strengths, and ultimate composite strengths were lower. The elastic properties of unidirectional, cross-ply, and angle-ply composites can be predicted from modified constitutive equations and laminate theory. Further improvements in laminate properties may be achieved by reducing the matrix porosity and by optimizing the bond strength between the SiC fiber and RBSN matrix.

  11. Laminate behavior for SiC fiber-reinforced reaction-bonded silicon nitride matrix composites

    NASA Technical Reports Server (NTRS)

    Rhatt, R. T.; Phillips, R. E.

    1988-01-01

    The room temperature mechanical properties of SiC fiber reinforced reaction-bonded silicon nitride matrix composite laminates (SiC/RBSN) have been measured. The laminates contained approx 30 volume fraction of aligned 142-micron diameter SiC fiber in a porous RBSN matrix. Three types of laminate studied were unidirectional: (1) (0) sub 8, (2) (10) sub 8, and (3) (45) sub 8, and (90) sub 8; cross plied laminates (0 sub 2/90 sub 2); and angle plied laminates: (+45 sub 2/-45 sub 2). Each laminate contained eight fiber plies. Results of the unidirectionally reinforced composites tested at various angles to the reinforcement direction indicate large anisotropy in in-plane properties. In addition, strength properties of these composites along the fiber direction were independent of specimen gage length and were unaffected by notches normal to the fiber direction. Splitting parallel to the fiber at the notch tip appears to be the dominant crack blunting mechanism responsible for notch insensitive behavior of these composites. In-plane properties of the composites can be improved by 2-D laminate construction. Mechanical property results for (0 sub 2/90 sub 2)sub s and (+45/-45 sub 2) sub s laminates showed that their matrix failure strains were similar to that for (0) sub 8 laminates, but their primary elastic moduli, matrix cracking strengths, and ultimate composite strengths were lower. The elastic properties of unidirectional, cross-ply, and angle-ply composites can be predicted from modified constitutive equations and laminate theory. Further improvements in laminate properties may be achieved by reducing the matrix porosity and by optimizing the bond strength between the SiC fiber and RBSN matrix.

  12. Design, microstructure, and high-temperature behavior of silicon nitride sintered with rate-earth oxides

    SciTech Connect

    Ciniculk, M.K. . Dept. of Materials Science and Mineral Engineering)

    1991-08-01

    The processing-microstructure-property relations of silicon nitride ceramics sintered with rare-earth oxide additives have been investigated with the aim of improving their high-temperature behavior. The additions of the oxides of Y, Sm, Gd, Dy, Er, or Yb were compositionally controlled to tailor the intergranular phase. The resulting microstructure consisted of {beta}-Si{sub 3}N{sub 4} grains and a crystalline secondary phase of RE{sub 2}Si{sub 2}O{sub 7}, with a thin residual amorphous phase present at grain boundaries. The lanthanide oxides were found to be as effective as Y{sub 2}O{sub 3} in densifying Si{sub 3}N{sub 4}, resulting in identical microstructures. The crystallization behavior of all six disilicates was similar, characterized by a limited nucleation and rapid growth mechanism resulting in large single crystals. Complete crystallization of the intergranular phase was obtained with the exception of a residual amorphous, observed at interfaces and believed to be rich in impurities, the cause of incomplete devitrification. The low resistance to oxidation of these materials was attributed to the minimization of amorphous phases via devitrification to disilicates, compatible with SiO{sub 2}, the oxidation product of Si{sub 3}N{sub 4}. The strength retention of these materials at 1300{degrees}C was found to be between 80% and 91% of room-temperature strength, due to crystallization of the secondary phase and a residual but refractory amorphous grain-boundary phase. The creep behavior was found to be strongly dependent on residual amorphous phase viscosity as well as on the oxidation behavior, as evidenced by the nonsteady-state creep rates of all materials. 122 refs., 51 figs., 12 tabs.

  13. Environmentally Assisted Cracking in Silicon Nitride Barrier Films on Poly(ethylene terephthalate) Substrates.

    PubMed

    Kim, Kyungjin; Luo, Hao; Singh, Ankit K; Zhu, Ting; Graham, Samuel; Pierron, Olivier N

    2016-10-03

    A singular critical onset strain value has been used to characterize the strain limits of barrier films used in flexible electronics. However, such metrics do not account for time-dependent or environmentally assisted cracking, which can be critical in determining the overall reliability of these thin-film coatings. In this work, the time-dependent channel crack growth behavior of silicon nitride barrier films on poly(ethylene terephthalate) (PET) substrates is investigated in dry and humid environments by tensile tests with in situ optical microscopy and numerical models. The results reveal the occurrence of environmentally assisted crack growth at strains well below the critical onset crack strain and in the absence of polymer-relaxation-assisted, time-dependent crack growth. The crack growth rates in laboratory air are about 1 order of magnitude larger than those tested in dry environments (dry air or dry nitrogen). In laboratory air, crack growth rates increase from ∼200 nm/s to 60 μm/s for applied stress intensity factors, K, ranging from 1.0 to 1.4 MPa·m(1/2), below the measured fracture toughness Kc of 1.8 MPa·m(1/2). The crack growth rates in dry environments were also strongly dependent on the prior storage of the specimens, with larger rates for specimens exposed to laboratory air (and therefore moisture) prior to testing compared to specimens stored in a dry environment. This behavior is attributed to moisture-assisted cracking, with a measured power law exponent of ∼22 in laboratory air. This study also reveals that much larger densities of channel cracks develop in the humid environment, suggesting an easier initiation of channel cracks in the presence of water vapor. The results obtained in this work are critical to address the time-dependent and environmental reliability issues of thin brittle barriers on PET substrates for flexible electronics applications.

  14. Properties of textured silicon nitride ceramics produced by seeded tape-casting

    NASA Astrophysics Data System (ADS)

    Blanton, William T.

    Previous studies have shown preferred orientation in silicon nitride (Si3N4) imparts anisotropic properties to the material as a result of both anisotropy in the Si3N4 single crystal and the morphology of the Si3N4 grains. In this study, oriented Si3N4 materials were produced by the seeded tape-casting method wherein elongated beta-Si3N4 "seeds" were added to predominately alpha-Si3N4 ceramic slurries. The tapes were subsequently cut, stacked, laminated and hot-pressed with various stacking sequences. Through x-ray pole figure measurements and the calculation of the orientation distribution function (ODF), planar textures were measured when individual seeded layers were stacked randomly and an orthotropic texture was observed when the layers were aligned in the tape-casting direction. Maximum (002) multiples of a random distribution (MRD) for these two sample types were measured as 2.1 and 5.8, respectively. Comparing these results with those of unseeded samples indicates the beta-Si3N4 seeds are entirely responsible for the orthotropic texture recorded in the seeded tape-cast materials. Property anisotropy in the textured samples was found to be subtle. Indentation toughness measurements showed slightly higher values normal to the tape-casting plane (9.5 MPa·m1/2) compared to values in the tape-casting direction (8.0 MPa·m1/2) and the elastic constants normal to the tape-casting plane are generally lower than those in the tape-cast and cross-cast sample directions. The R-curve behavior of these samples showed only a slight increase in toughness with increasing crack length and no difference in toughness between sample types, all falling within the range of 4.5 to 5.8 MPa·m 1/2.

  15. Silicon-Nitride-based Integrated Optofluidic Biochemical Sensors using a Coupled-Resonator Optical Waveguide

    NASA Astrophysics Data System (ADS)

    WANG, Jiawei; YAO, Zhanshi; Poon, Andrew

    2015-04-01

    Silicon nitride (SiN) is a promising material platform for integrating photonic components and microfluidic channels on a chip for label-free, optical biochemical sensing applications in the visible to near-infrared wavelengths. The chip-scale SiN-based optofluidic sensors can be compact due to a relatively high refractive index contrast between SiN and the fluidic medium, and low-cost due to the complementary metal-oxide-semiconductor (CMOS)-compatible fabrication process. Here, we demonstrate SiN-based integrated optofluidic biochemical sensors using a coupled-resonator optical waveguide (CROW) in the visible wavelengths. The working principle is based on imaging in the far field the out-of-plane elastic-light-scattering patterns of the CROW sensor at a fixed probe wavelength. We correlate the imaged pattern with reference patterns at the CROW eigenstates. Our sensing algorithm maps the correlation coefficients of the imaged pattern with a library of calibrated correlation coefficients to extract a minute change in the cladding refractive index. Given a calibrated CROW, our sensing mechanism in the spatial domain only requires a fixed-wavelength laser in the visible wavelengths as a light source, with the probe wavelength located within the CROW transmission band, and a silicon digital charge-coupled device (CCD) / CMOS camera for recording the light scattering patterns. This is in sharp contrast with the conventional optical microcavity-based sensing methods that impose a strict requirement of spectral alignment with a high-quality cavity resonance using a wavelength-tunable laser. Our experimental results using a SiN CROW sensor with eight coupled microrings in the 680nm wavelength reveal a cladding refractive index change of ~1.3 × 10^-4 refractive index unit (RIU), with an average sensitivity of ~281 ± 271 RIU-1 and a noise-equivalent detection limit (NEDL) of 1.8 ×10^-8 RIU ~ 1.0 ×10^-4 RIU across the CROW bandwidth of ~1 nm.

  16. Effects of Silicon-Nitride Films on the Electronic Properties of Si-SiO2 Interfaces

    NASA Astrophysics Data System (ADS)

    Kamada, Mikio; Yagi, Atsuo

    1982-12-01

    The electronic properties of Si-SiO2 interface states in Metal-Nitride-Oxide-Silicon (MNOS) with thick oxide films are investigated. It is shown that a large number of acceptor-like interface states are created when MNOS is annealed at high temperatures, and that subsequent low temperature hydrogen annealing reduces the number of these states. We found that the energy distribution of the interface states is independent of their density. The possible cause of these interface states may be thermal stress induced at the interface.

  17. A Monolithically Integrated Gallium Nitride Nanowire/Silicon Solar Cell Photocathode for Selective Carbon Dioxide Reduction to Methane.

    PubMed

    Wang, Yichen; Fan, Shizhao; AlOtaibi, Bandar; Wang, Yongjie; Li, Lu; Mi, Zetian

    2016-06-20

    A gallium nitride nanowire/silicon solar cell photocathode for the photoreduction of carbon dioxide (CO2 ) is demonstrated. Such a monolithically integrated nanowire/solar cell photocathode offers several unique advantages, including the absorption of a large part of the solar spectrum and highly efficient carrier extraction. With the incorporation of copper as the co-catalyst, the devices exhibit a Faradaic efficiency of about 19 % for the 8e(-) photoreduction to CH4 at -1.4 V vs Ag/AgCl, a value that is more than thirty times higher than that for the 2e(-) reduced CO (ca. 0.6 %).

  18. SF6/O2 plasma effects on silicon nitride passivation of AlGaN /GaN high electron mobility transistors

    NASA Astrophysics Data System (ADS)

    Meyer, David J.; Flemish, Joseph R.; Redwing, Joan M.

    2006-11-01

    The effects of various plasma and wet chemical surface pretreatments on the electrical characteristics of AlGaN /GaN high electron mobility transistors (HEMTs) passivated with plasma-deposited silicon nitride were investigated. The results of pulsed IV measurements show that samples exposed to various SF6/O2 plasma treatments have markedly better rf dispersion characteristics compared to samples that were either untreated or treated in wet buffered oxide etch prior to encapsulation. The improvement in these characteristics correlates with the reduction of carbon on the semiconductor surface as measured with x-ray photoelectron spectroscopy. HEMT channel sheet resistance was also affected by varying silicon nitride deposition parameters.

  19. Integration of bulk-quality thin film magneto-optical cerium-doped yttrium iron garnet on silicon nitride photonic substrates.

    PubMed

    Onbasli, Mehmet C; Goto, Taichi; Sun, Xueyin; Huynh, Nathalie; Ross, C A

    2014-10-20

    Cerium substituted yttrium iron garnet (Ce:YIG) films were grown on yttrium iron garnet (YIG) seed layers on silicon nitride films using pulsed laser deposition. Optimal process conditions for forming garnet films on silicon nitride are presented. Bulk or near-bulk magnetic and magneto-optical properties were observed for 160 nm thick Ce:YIG films grown at 640 °C on rapid thermal annealed 40 nm thick YIG grown at 640 °C and 2 Hz pulse rate. The effect of growth temperature and deposition rate on structural, magnetic and magneto-optical properties has been investigated.

  20. Design and fabrication of ultrathin silicon-nitride membranes for use in UV-visible airgap-based MEMS optical filters

    NASA Astrophysics Data System (ADS)

    Ghaderi, Mohammadamir; Wolffenbuttel, Reinoud F.

    2016-10-01

    MEMS-based airgap optical filters are composed of quarter-wave thick high-index dielectric membranes that are separated by airgaps. The main challenge in the fabrication of these filters is the intertwined optical and mechanical requirements. The thickness of the layers decreases with design wavelength, which makes the optical performance in the UV more susceptible to fabrication tolerances, such as thickness and composition of the deposited layers, while the ability to sustain a certain level of residual stress by the structural strength becomes more critical. Silicon-nitride has a comparatively high Young's modulus and good optical properties, which makes it a suitable candidate as the membrane material. However, both the mechanical and optical properties in a silicon-nitride film strongly depend on the specifics of the deposition process. A design trade-off is required between the mechanical strength and the index of refraction, by tuning the silicon content in the silicon-nitride film. However, also the benefit of a high index of refraction in a silicon-rich film should be weighed against the increased UV optical absorption. This work presents the design, fabrication, and preliminary characterization of one and three quarter-wave thick silicon-nitride membranes with a one-quarter airgap and designed to give a spectral reflectance at 400 nm. The PECVD silicon-nitride layers were initially characterized, and the data was used for the optical and mechanical design of the airgap filters. A CMOS compatible process based on polysilicon sacrificial layers was used for the fabrication of the membranes. Optical characterization results are presented.

  1. An improved process for preparing Tris(N-methylamino)methylsilane monomer for use in producing silicon carbide-silicon nitride fibers

    NASA Technical Reports Server (NTRS)

    Penn, B. G.; Ledbetter, F. E., III; Clemons, J. M.

    1984-01-01

    A technique is described for the preparation of tris(N-methylamino)methylsilane by a process which may be used for large-scale production. The steps include synthesis, filtration to remove the salt byproduct, and distillation to remove the product from the reaction mixture under anhydrous conditions. Tris(N-methylamino)methylsilane is a precursor used to prepare silicon carbide-silicon nitride fibers that have been shown to have high tensile modulus (29 x 10 to the 6th psi for 0.4 mil diameter), high tensile strength (10.5 x 10 to the 4th psi), and high electrical resistivity (7 x 10 to the 8th ohm-cm).

  2. Chemical nature of silicon nitride-indium phosphide interface and rapid thermal annealing for InP MISFETs

    NASA Technical Reports Server (NTRS)

    Biedenbender, M. D.; Kapoor, V. J.

    1990-01-01

    A rapid thermal annealing (RTA) process in pure N2 or pure H2 was developed for ion-implanted and encapsulated indium phosphide compound semiconductors, and the chemical nature at the silicon nitride-InP interface before and after RTA was examined using XPS. Results obtained from SIMS on the atomic concentration profiles of the implanted silicon in InP before and after RTA are presented, together with electrical characteristics of the annealed implants. Using the RTA process developed, InP metal-insulator semiconductor FETs (MISFETS) were fabricated. The MISFETS prepared had threshold voltages of +1 V, transconductance of 27 mS/mm, peak channel mobility of 1200 sq cm/V per sec, and drain current drift of only 7 percent.

  3. Coupled fiber taper extraction of 1.53 microm photoluminescence from erbium doped silicon nitride photonic crystal cavities.

    PubMed

    Shambat, Gary; Gong, Yiyang; Lu, Jesse; Yerci, Selçuk; Li, Rui; Dal Negro, Luca; Vucković, Jelena

    2010-03-15

    Optical fiber tapers are used to collect photoluminescence emission at approximately 1.5 microm from photonic crystal cavities fabricated in erbium doped silicon nitride on silicon. In the experiment, photoluminescence collection via one arm of the fiber taper is enhanced 2.5 times relative to free space collection, corresponding to a net collection efficiency of 4%. Theoretically, the collection efficiency into one arm of the fiber-taper with this material system and cavity design can be as high as 12.5%, but the degradation of the experimental coupling efficiency relative to this value mainly comes from scattering loss within the short taper transition regions. By varying the fiber taper offset from the cavity, a broad tuning range of coupling strength and collection efficiency is obtained. This material system combined with fiber taper collection is promising for building on-chip optical amplifiers.

  4. Densification of Reaction Bonded Silicon Nitride with the Addition of Fine Si Powder Effects on the Sinterability and Mechanical Properties

    SciTech Connect

    Lee, Sea-Hoon; Cho, Chun-Rae; Park, Young-Jo; Ko, Jae-Woong; Kim, Hai-Doo; Lin, Hua-Tay; Becher, Paul F

    2013-01-01

    The densification behavior and strength of sintered reaction bonded silicon nitrides (SRBSN) that contain Lu2O3-SiO2 additives were improved by the addition of fine Si powder. Dense specimens (relative density: 99.5%) were obtained by gas-pressure sintering (GPS) at 1850oC through the addition of fine Si. In contrast, the densification of conventional specimens did not complete at 1950oC. The fine Si decreased the onset temperature of shrinkage and increased the shrinkage rate because the additive helped the compaction of green bodies and induced the formation of fine Si3N4 particles after nitridation and sintering at and above 1600oC. The amount of residual SiO2 within the specimens was not strongly affected by adding fine Si powder because most of the SiO2 layer that had formed on the fine Si particles decomposed during nitridation. The maximum strength and fracture toughness of the specimens were 991 MPa and 8.0 MPa m1/2, respectively.

  5. Impact strength of continuous-carbon-fiber-reinforced silicon nitride measured by using the split Hopkinson pressure bar

    SciTech Connect

    Ogawa, Kinya; Sugiyama, Fumiko; Pezzotti, G.; Nishida, Toshihiko

    1998-01-01

    Three-point impact bending tests, using the split Hopkinson pressure bar method, were performed to evaluate the fracture resistance of monolithic silicon nitride (SN) and carbon-fiber-reinforced silicon nitride (CFRSN) ceramics. By applying ramped incident-stress waves in the split Hopkinson pressure bar apparatus, relatively smooth stress-time curves could be recorded without using any artificial filtering process. The maximum load in the load-deflection curve of the CFRSN material increased, in comparison to its static value, when impact testing was applied. Such behavior was substantially different from that of the monolithic SN material, for which the maximum load values from impact and static testing were almost the same. The time dependence of strength in the CFRSN ceramic was then investigated by using relaxation tests, and the impact strength behavior could be explained by these results. Also, the shear strength was significantly dependent on the deformation rate, whereas the tensile strength was almost independent of it. The experimental results were compared with the numerical predictions of the stress distribution that were obtained by using finite-element analysis.

  6. Assessments of Mechanical and Life Limiting Properties of Two Candidate Silicon Nitrides for Stirling Convertor Heater Head Applications

    NASA Technical Reports Server (NTRS)

    Choi, Sung R.; Krause, David L.

    2006-01-01

    NASA Glenn Research Center is developing advanced technology for Stirling convertors with a target of significantly improving the specific power and efficiency of the convertor and overall generator for Mars rovers and deep space missions. One specific approach to the target has been recognized as the use of appropriate high-temperature materials. As a series of ceramic material approaches in Advanced Stirling Convertor Development Program in fiscal year 2005, two commercial, structural silicon nitrides AS800 (Honeywell, Torrence, California) and SN282 (Kyocera, Vancouver, Washington) were selected and their mechanical and life limiting properties were characterized at 1050 C in air. AS800 exhibited both strength and Weibull modulus greater than SN282. A life limiting phenomenon was apparent in AS800 with a low slow crack growth parameter n = 15; whereas, a much increased resistance to slow crack growth was found in SN282 with n greater than 100. Difference in elastic modulus and thermal conductivity was negligible up to 1200 C between the two silicon nitrides. The same was true for the coefficient of thermal expansion up to 1400 C.

  7. Comparison of dynamic fatigue behavior between SiC whisker-reinforced composite and monolithic silicon nitrides

    NASA Technical Reports Server (NTRS)

    Choi, Sung R.; Salem, Jonathan A.

    1991-01-01

    The dynamic fatigue behavior of 30 vol percent silicon nitride whisker-reinforced composite and monolithic silicon nitrides were determined as a function of temperature from 1100 to 1300 C in ambient air. The fatigue susceptibility parameter, n, decreased from 88.1 to 20.1 for the composite material, and from 50.8 to 40.4 for the monolithic, with increasing temperature from 1100 to 1300 C. A transition in the dynamic fatigue curve occurred for the composite material at a low stressing rate of 2 MPa/min at 1300 C, resulting in a very low value of n equals 5.8. Fractographic analysis showed that glassy phases in the slow crack growth region were more pronounced in the composite compared to the monolithic material, implying that SiC whisker addition promotes the formation of glass rich phases at the grain boundaries, thereby enhancing fatigue. These results indicate that SiC whisker addition to Si3 N4 matrix substantially deteriorates fatigue resistance inherent to the matrix base material for this selected material system.

  8. Three-dimensional finite element analyses of four designs of a high-strength silicon nitride implant.

    PubMed

    Lin, S; Shi, S; LeGeros, R Z; LeGeros, J P

    2000-01-01

    The effects of implant shape and size on the stress distribution around high-strength silicon nitride implants under vertical and oblique forces were determined using a three-dimensional finite element analysis. Finite element models were designed using as a basis the serial sections of the mandible. Using Auto-CAD software, the model simulated the placement of implants in the molar region of the left mandible. Results of the analyses demonstrated that mainly the implant root shape and the directions of bite forces influence the stress distributions in the supporting bone around each implant. Implant size is a lesser factor. The serrated implants presented a larger surface area to the bone than either the cylindrical or tapered implants, which resulted in lower compressive stress around the serrated implants. With increasing implant diameter and length, compressive stress decreased. The mean compressive stress distribution on the serrated implants was more flat (platykurtic) than on either the cylindrical or tapered implants. Results of studies on two load directions (vertical and oblique) showed that, in either case, the compressive stress in the cortical bone around the neck of the implant was higher than in the cancellous bone along the length of the implant. The most extreme principal compressive stress was found with oblique force. This study provides the first information on the relationship between shape of the silicon nitride implant and stress on the supporting bone.

  9. Sintered-reaction Bonded Silicon Nitride Densified by a Gas Pressure Sintering Process Effects of Rare Earth Oxide Sintering Additives

    SciTech Connect

    Lee, S. H.; Ko, J. W.; Park, Y. J.; Kim, H. D.; Lin, Hua-Tay; Becher, Paul F

    2012-01-01

    Reaction-bonded silicon nitrides containing rare-earth oxide sintering additives were densified by gas pressure sintering. The sintering behavior, microstructure and mechanical properties of the resultant specimens were analyzed. For that purpose, Lu2O3-SiO2 (US), La2O3-MgO (AM) and Y2O3-Al2O3 (YA) additive systems were selected. Among the tested compositions, densification of silicon nitride occurred at the lowest temperature when using the La2O3-MgO system. Since the Lu2O3-SiO2 system has the highest melting temperature, full densification could not be achieved after sintering at 1950oC. However, the system had a reasonably high bending strength of 527 MPa at 1200oC in air and a high fracture toughness of 9.2 MPa m1/2. The Y2O3-Al2O3 system had the highest room temperature bending strength of 1.2 GPa

  10. Fabrication of a Carbon Nanotube-Embedded Silicon Nitride Membrane for Studies of Nanometer-Scale Mass Transport

    SciTech Connect

    Holt, J K; Noy, A; Huser, T; Eaglesham, D; Bakajin, O

    2004-08-25

    A membrane consisting of multiwall carbon nanotubes embedded in a silicon nitride matrix was fabricated for fluid mechanics studies on the nanometer scale. Characterization by tracer diffusion and scanning electron microscopy suggests that the membrane is free of large voids. An upper limit to the diffusive flux of D{sub 2}O of 2.4x10-{sup 8} mole/m{sup 2}-s was determined, indicating extremely slow transport. By contrast, hydrodynamic calculations of water flow across a nanotube membrane of similar specifications predict a much higher molar flux of 1.91 mole/m{sup 2}-s, suggesting that the nanotubes produced possess a 'bamboo' morphology. The carbon nanotube membranes were used to make nanoporous silicon nitride membranes, fabricated by sacrificial removal of the carbon. Nitrogen flow measurements on these structures give a membrane permeance of 4.7x10{sup -4} mole/m{sup 2}-s-Pa at a pore density of 4x10{sup 10} cm{sup -2}. Using a Knudsen diffusion model, the average pore size of this membrane is estimated to be 66 nm, which agrees well with TEM observations of the multiwall carbon nanotube outer diameter. These membranes are a robust platform for the study of confined molecular transport, with applications inseparations and chemical sensing.

  11. Foreign Object Damage in a Gas-Turbine Grade Silicon Nitride by Spherical Projectiles of Various Materials

    NASA Technical Reports Server (NTRS)

    Choi, Sung R.; Racz, Zsolt; Bhatt, Ramakrishna T.; Brewer, David N.

    2006-01-01

    Assessments of foreign object damage (FOD) of a commercial, gas-turbine grade, in situ toughened silicon nitride ceramic (AS800, Honeywell Ceramics Components) were made using four different projectile materials at ambient temperature. AS800 flexure target specimens rigidly supported were impacted at their centers in a velocity range from 50 to 450 m/s by spherical projectiles with a diameter of 1.59 mm. Four different projectile materials were used including hardened steel, annealed steel, silicon nitride ceramic, and brass. Post-impact strength of each target specimen impacted was determined as a function of impact velocity to appraise the severity of local impact damage. For a given impact velocity, the degree of strength degradation was greatest for ceramic balls, least for brass balls, and intermediate for annealed and hardened steel balls. For steel balls, hardened projectiles yielded more significant impact damage than annealed counterparts. The most important material parameter affecting FOD was identified as hardness of projectiles. Impact load as a function of impact velocity was quasi-statically estimated based on both impact and static indentation associated data.

  12. Role of GaAs surface clearing in plasma deposition of silicon nitride films for encapsulated annealing

    NASA Technical Reports Server (NTRS)

    Valco, G. J.; Kapoor, V. J.

    1985-01-01

    The role of GaAs surface cleaning and plasma reactor cleaning prior to deposition of silicon nitride films for encapsulated annealing has been investigated. X-ray photoelectron spectroscopy was employed to determine the surface characteristics of GaAs treated with HCl, HF, and NH4OH solutions preceded by a degreasing procedure. The HCl clean left the least amount of oxygen on the surface. Fluorine contamination resulting from the CF4 plasma used to clean the reactor was found to be located at the film-substrate interface by Auger electron spectroscopy with argon-ion sputtering. A modified deposition procedure was developed to eliminate the fluorine contamination. Plasma deposition of silicon nitride encapsulating films was found to modify the I-V characteristics of Schottky diodes subsequently formed on GaAs surface. The reverse current of the diodes was slightly reduced. Substrates implanted with Si at 100 keV and a dose of 5 x 10 to the 12th/sq cm showed a peak electron concentration of 1.7 x 10 to the 17th/cu cm at a depth of 0.1-micron with 60 percent activation after encapsulation and annealing at 800 C for 7 min.

  13. Influence of Cooling Channel Geometry on the Thermal Response in Silicon Nitride Plates Studied

    NASA Technical Reports Server (NTRS)

    Abdul-Aziz, Ali; Bhatt, Ramakrishna T.; Baaklini, George Y.

    2002-01-01

    Engine manufacturers are continually attempting to improve the performance and efficiency of internal combustion engines. Usually they raise the operating temperature or reduce the cooling air requirement for the hot section turbine components. However, the success of these attempts depends on finding materials that are lightweight, are strong, and can withstand high temperatures. Ceramics are among the top candidate materials considered for such harsh applications. They hold low-density, high-temperature strength, and thermal conductivity, and they are undergoing investigation as potential materials for replacing nickel-base alloys and superalloys that are currently used for engine hot-section components. Ceramic structures can withstand higher operating temperatures and a harsh combustion environment. In addition, their low densities relative to metals help reduce component mass. The long-term objectives of the High Temperature Propulsion Components (HOTPC) Project are to develop manufacturing technology, thermal and environmental barrier coatings (TBC/EBC), and the analytical modeling capability to predict thermomechanical stresses in minimally cooled silicon nitride turbine nozzle vanes under simulated engine conditions. Two- and three-dimensional finite element analyses with TBC were conducted at the NASA Glenn Research Center. Nondestructive evaluation was used to determine processing defects. The study included conducting preliminary parametric analytical runs of heat transfer and stress analyses under steady-state conditions to demonstrate the feasibility of using cooled Si3N4 parts for turbine applications. The influence of cooling-channel shapes (such as circular, square, and ascending-order cooling channels) on cooling efficiency and thermal stresses was investigated. Temperature distributions were generated for all cases considered under both cooling and no-cooling conditions, with air being the cooling medium. The table shows the magnitude of the

  14. Silicon nitride based plasmonic components for CMOS back-end-of-line integration.

    PubMed

    Zhu, Shiyang; Lo, G Q; Kwong, D L

    2013-10-07

    Silicon nitride waveguides provide low propagation loss but weak mode confinement due to the relatively small refractive index contrast between the Si₃N₄ core and the SiO2 cladding. On the other hand, metal-insulator-metal (MIM) plasmonic waveguides offer strong mode confinement but large propagation loss. In this work, MIM-like plasmonic waveguides and passive devices based on horizontal Cu-Si₃N₄-Cu or Cu-SiO₂-Si₃N₄-SiO₂-Cu structures are integrated in the conventional Si₃N₄ waveguide circuits using standard CMOS backend processes, and are characterized around 1550-nm telecom wavelengths using the conventional fiber-waveguide-fiber method. The Cu-Si₃N₄(~100 nm)-Cu devices exhibit ~0.78-dB/μm propagation loss for straight waveguides, ~38% coupling efficiency with the conventional 1-μm-wide Si₃N₄ waveguide through a 2-μm-long taper coupler, ~0.2-dB bending loss for sharp 90° bends, and ~0.1-dB excess loss for ultracompact 1 × 2 and 1 × 4 power splitters. Inserting a ~10-nm SiO₂ layer between the Si3N4 core and the Cu cover (i.e., the Cu-SiO2(~10 nm)-Si₃N₄(~100 nm)-SiO2(~10 nm)-Cu devices), the propagation loss and the coupling efficiency are improved to ~0.37 dB/μm and ~52% while the bending loss and the excess loss are degraded to ~3.2 dB and ~2.1 dB, respectively. These experimental results are roughly consistent with the numerical simulation results after taking the influence of possible imperfect fabrication into account. Ultracompact plasmonic ring resonators with 1-μm radius are demonstrated with an extinction ratio of ~18 dB and a quality factor of ~84, close to the theoretical prediction.

  15. Modeling of the refractive index and composition of luminescent nanometric chlorinated-silicon nitride films with embedded Si-quantum dots

    NASA Astrophysics Data System (ADS)

    Rodríguez-Gómez, A.; Escobar-Alarcón, L.; Serna, R.; Cabello, F.; Haro-Poniatowski, E.; García-Valenzuela, A.; Alonso, J. C.

    2016-10-01

    The refractive index of nanometric (<100 nm) chlorinated-silicon nitride films with embedded silicon quantum dots, prepared by remote plasma enhanced chemical vapor deposition was investigated by spectroscopic ellipsometry. The complex refractive indexes and thicknesses of the films were obtained from the ellipsometric measurements using the Cauchy model. The chemical composition of the bulk of the films, including the hydrogen, chlorine, and oxygen content, was measured by elastic forward analysis (EFA) and X-ray photoelectron spectroscopy (XPS). The EFA and XPS results indicate that the films are composed of nearly stoichiometric silicon nitride (Si3N4) with different amounts of hydrogen, chlorine, and oxygen, and that their top surface is oxidized. Based on the composition results the refractive index of the films was fitted using the effective medium approximation considering the system: Si substrate + Si3N4 + Si + voids + top ultrathin oxidized surface layer.

  16. Approaching Defect-free Amorphous Silicon Nitride by Plasma-assisted Atomic Beam Deposition for High Performance Gate Dielectric.

    PubMed

    Tsai, Shu-Ju; Wang, Chiang-Lun; Lee, Hung-Chun; Lin, Chun-Yeh; Chen, Jhih-Wei; Shiu, Hong-Wei; Chang, Lo-Yueh; Hsueh, Han-Ting; Chen, Hung-Ying; Tsai, Jyun-Yu; Lu, Ying-Hsin; Chang, Ting-Chang; Tu, Li-Wei; Teng, Hsisheng; Chen, Yi-Chun; Chen, Chia-Hao; Wu, Chung-Lin

    2016-06-21

    In the past few decades, gate insulators with a high dielectric constant (high-k dielectric) enabling a physically thick but dielectrically thin insulating layer, have been used to replace traditional SiOx insulator and to ensure continuous downscaling of Si-based transistor technology. However, due to the non-silicon derivative natures of the high-k metal oxides, transport properties in these dielectrics are still limited by various structural defects on the hetero-interfaces and inside the dielectrics. Here, we show that another insulating silicon compound, amorphous silicon nitride (a-Si3N4), is a promising candidate of effective electrical insulator for use as a high-k dielectric. We have examined a-Si3N4 deposited using the plasma-assisted atomic beam deposition (PA-ABD) technique in an ultra-high vacuum (UHV) environment and demonstrated the absence of defect-related luminescence; it was also found that the electronic structure across the a-Si3N4/Si heterojunction approaches the intrinsic limit, which exhibits large band gap energy and valence band offset. We demonstrate that charge transport properties in the metal/a-Si3N4/Si (MNS) structures approach defect-free limits with a large breakdown field and a low leakage current. Using PA-ABD, our results suggest a general strategy to markedly improve the performance of gate dielectric using a nearly defect-free insulator.

  17. Approaching Defect-free Amorphous Silicon Nitride by Plasma-assisted Atomic Beam Deposition for High Performance Gate Dielectric

    PubMed Central

    Tsai, Shu-Ju; Wang, Chiang-Lun; Lee, Hung-Chun; Lin, Chun-Yeh; Chen, Jhih-Wei; Shiu, Hong-Wei; Chang, Lo-Yueh; Hsueh, Han-Ting; Chen, Hung-Ying; Tsai, Jyun-Yu; Lu, Ying-Hsin; Chang, Ting-Chang; Tu, Li-Wei; Teng, Hsisheng; Chen, Yi-Chun; Chen, Chia-Hao; Wu, Chung-Lin

    2016-01-01

    In the past few decades, gate insulators with a high dielectric constant (high-k dielectric) enabling a physically thick but dielectrically thin insulating layer, have been used to replace traditional SiOx insulator and to ensure continuous downscaling of Si-based transistor technology. However, due to the non-silicon derivative natures of the high-k metal oxides, transport properties in these dielectrics are still limited by various structural defects on the hetero-interfaces and inside the dielectrics. Here, we show that another insulating silicon compound, amorphous silicon nitride (a-Si3N4), is a promising candidate of effective electrical insulator for use as a high-k dielectric. We have examined a-Si3N4 deposited using the plasma-assisted atomic beam deposition (PA-ABD) technique in an ultra-high vacuum (UHV) environment and demonstrated the absence of defect-related luminescence; it was also found that the electronic structure across the a-Si3N4/Si heterojunction approaches the intrinsic limit, which exhibits large band gap energy and valence band offset. We demonstrate that charge transport properties in the metal/a-Si3N4/Si (MNS) structures approach defect-free limits with a large breakdown field and a low leakage current. Using PA-ABD, our results suggest a general strategy to markedly improve the performance of gate dielectric using a nearly defect-free insulator. PMID:27325155

  18. Nucleation and growth of combustion flame deposited diamond coatings on silicon nitride

    NASA Astrophysics Data System (ADS)

    Rozbicki, Robert T.

    An investigation has been performed on the kinetics of diamond nucleation on silicon nitride (Si3N4) based materials during oxy-acetylene combustion flame chemical vapor deposition. The deposits were characterized using scanning electron microscopy (SEM), x-ray diffraction (XRD), x-ray photoelectron spectroscopy (XPS), and atomic force microscopy (AFM) techniques. Kinetic parameters of the nucleation process, such as nucleation rate (I), period of initial nuclei formation (tng), and maximum nucleation density (Nd) were experimentally determined. It was concluded that at low temperatures (Ts < 875°C), the observed nucleation density is due to epitaxial or pseudo-epitaxial growth on residual particles on the substrate surface. At higher temperatures (Ts > 875°C), heterogeneous nucleation of diamond on Si3N4 occurs with an apparent activation energy ( Eahet ) of ˜ 18 kcal/mol. From an Arrhenius plot of particle growth rate, the activation energy (Ea) for diamond growth was calculated to be ˜ 9 kcal/mol. These results suggest that the energy barrier associated with the heterogeneous nucleation process ( Eahet > Ea) may in fact be responsible for the observed low nucleation densities on Si3N4 substrates. Consequently, nucleation density on Si3N4 is limited by the concentration of available sites for nuclei formation. As surface diffusion to those sites was determined to be negligible, growth of stable nuclei occurs via direct impingement of gas phase species. Based on these conclusions, a multistage deposition technique was developed to deposit continuous diamond coatings on untreated Si3N4 substrates. This two stage technique consisted of (i) an in situ flame pretreatment of the substrate to enhance nucleation through the formation of SiC and (ii) subsequent growth on the flame pretreated surface under optimized parameters. Using a previously developed compression test for brittle coating/substrate systems, the adhesion of multistage deposited coatings was compared

  19. Performance of Chevron-notch short bar specimen in determining the fracture toughness of silicon nitride and aluminum oxide

    NASA Technical Reports Server (NTRS)

    Munz, D.; Bubsey, R. T.; Shannon, J. L., Jr.

    1980-01-01

    Ease of preparation and testing are advantages unique to the chevron-notch specimen used for the determination of the plane strain fracture toughness of extremely brittle materials. During testing, a crack develops at the notch tip and extends stably as the load is increased. For a given specimen and notch configuration, maximum load always occurs at the same relative crack length independent of the material. Fracture toughness is determined from the maximum load with no need for crack length measurement. Chevron notch acuity is relatively unimportant since a crack is produced during specimen loading. In this paper, the authors use their previously determined stress intensity factor relationship for the chevron-notch short bar specimen to examine the performance of that specimen in determining the plane strain fracture toughness of silicon nitride and aluminum oxide.

  20. Influence of Cooling Hole Geometry and Material Conductivity on the Thermal Response of Cooled Silicon Nitride Plate

    NASA Technical Reports Server (NTRS)

    Abdul-Aziz, Ali; Bhatt, Ramakrishna T.; Girgis, Morris

    2002-01-01

    To complement the effectiveness of ceramic materials and the applicability to turbine engine applications, a parametric study using the finite element method was carried out. This study conducted thorough analyses of a thermal-barrier-coated silicon nitride (Si3N4) plate specimen with cooling channels, where its thermal conductivity was verified in an attempt to minimize the thermal stresses and reach an optimal rate of stress. The thermal stress profile was generated for specimens with circular and square cooling channels. Lower stresses were reported for a higher magnitude of thermal conductivity and in particular for the circular cooling channel arrangement. Contour plots for the stresses and the temperature are presented and discussed.