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Sample records for silicon photon detectors

  1. Advantages of gated silicon single photon detectors

    NASA Astrophysics Data System (ADS)

    Legré, Matthieu; Lunghi, Tommaso; Stucki, Damien; Zbinden, Hugo

    2013-05-01

    We present gated silicon single photon detectors based on two commercially available avalanche photodiodes (APDs) and one customised APD from ID Quantique SA. This customised APD is used in a commercially available device called id110. A brief comparison of the two commercial APDs is presented. Then, the charge persistence effect of all of those detectors that occurs just after a strong illumination is shown and discussed.

  2. Low-resistivity photon-transparent window attached to photo-sensitive silicon detector

    DOEpatents

    Holland, Stephen Edward

    2000-02-15

    The invention comprises a combination of a low resistivity, or electrically conducting, silicon layer that is transparent to long or short wavelength photons and is attached to the backside of a photon-sensitive layer of silicon, such as a silicon wafer or chip. The window is applied to photon sensitive silicon devices such as photodiodes, charge-coupled devices, active pixel sensors, low-energy x-ray sensors and other radiation detectors. The silicon window is applied to the back side of a photosensitive silicon wafer or chip so that photons can illuminate the device from the backside without interference from the circuit printed on the frontside. A voltage sufficient to fully deplete the high-resistivity photosensitive silicon volume of charge carriers is applied between the low-resistivity back window and the front, patterned, side of the device. This allows photon-induced charge created at the backside to reach the front side of the device and to be processed by any circuitry attached to the front side. Using the inventive combination, the photon sensitive silicon layer does not need to be thinned beyond standard fabrication methods in order to achieve full charge-depletion in the silicon volume. In one embodiment, the inventive backside window is applied to high resistivity silicon to allow backside illumination while maintaining charge isolation in CCD pixels.

  3. Energy-resolved CT imaging with a photon-counting silicon-strip detector

    NASA Astrophysics Data System (ADS)

    Persson, Mats; Huber, Ben; Karlsson, Staffan; Liu, Xuejin; Chen, Han; Xu, Cheng; Yveborg, Moa; Bornefalk, Hans; Danielsson, Mats

    2014-11-01

    Photon-counting detectors are promising candidates for use in the next generation of x-ray computed tomography (CT) scanners. Among the foreseen benefits are higher spatial resolution, better trade-off between noise and dose and energy discriminating capabilities. Silicon is an attractive detector material because of its low cost, mature manufacturing process and high hole mobility. However, it is sometimes overlooked for CT applications because of its low absorption efficiency and high fraction of Compton scatter. The purpose of this work is to demonstrate that silicon is a feasible material for CT detectors by showing energy-resolved CT images acquired with an 80 kVp x-ray tube spectrum using a photon-counting silicon-strip detector with eight energy thresholds developed in our group. We use a single detector module, consisting of a linear array of 50 0.5 × 0.4 mm detector elements, to image a phantom in a table-top lab setup. The phantom consists of a plastic cylinder with circular inserts containing water, fat and aqueous solutions of calcium, iodine and gadolinium, in different concentrations. By using basis material decomposition we obtain water, calcium, iodine and gadolinium basis images and demonstrate that these basis images can be used to separate the different materials in the inserts. We also show results showing that the detector has potential for quantitative measurements of substance concentrations.

  4. Single Photon Counting UV Solar-Blind Detectors Using Silicon and III-Nitride Materials

    PubMed Central

    Nikzad, Shouleh; Hoenk, Michael; Jewell, April D.; Hennessy, John J.; Carver, Alexander G.; Jones, Todd J.; Goodsall, Timothy M.; Hamden, Erika T.; Suvarna, Puneet; Bulmer, J.; Shahedipour-Sandvik, F.; Charbon, Edoardo; Padmanabhan, Preethi; Hancock, Bruce; Bell, L. Douglas

    2016-01-01

    Ultraviolet (UV) studies in astronomy, cosmology, planetary studies, biological and medical applications often require precision detection of faint objects and in many cases require photon-counting detection. We present an overview of two approaches for achieving photon counting in the UV. The first approach involves UV enhancement of photon-counting silicon detectors, including electron multiplying charge-coupled devices and avalanche photodiodes. The approach used here employs molecular beam epitaxy for delta doping and superlattice doping for surface passivation and high UV quantum efficiency. Additional UV enhancements include antireflection (AR) and solar-blind UV bandpass coatings prepared by atomic layer deposition. Quantum efficiency (QE) measurements show QE > 50% in the 100–300 nm range for detectors with simple AR coatings, and QE ≅ 80% at ~206 nm has been shown when more complex AR coatings are used. The second approach is based on avalanche photodiodes in III-nitride materials with high QE and intrinsic solar blindness. PMID:27338399

  5. Single Photon Counting UV Solar-Blind Detectors Using Silicon and III-Nitride Materials.

    PubMed

    Nikzad, Shouleh; Hoenk, Michael; Jewell, April D; Hennessy, John J; Carver, Alexander G; Jones, Todd J; Goodsall, Timothy M; Hamden, Erika T; Suvarna, Puneet; Bulmer, J; Shahedipour-Sandvik, F; Charbon, Edoardo; Padmanabhan, Preethi; Hancock, Bruce; Bell, L Douglas

    2016-06-21

    Ultraviolet (UV) studies in astronomy, cosmology, planetary studies, biological and medical applications often require precision detection of faint objects and in many cases require photon-counting detection. We present an overview of two approaches for achieving photon counting in the UV. The first approach involves UV enhancement of photon-counting silicon detectors, including electron multiplying charge-coupled devices and avalanche photodiodes. The approach used here employs molecular beam epitaxy for delta doping and superlattice doping for surface passivation and high UV quantum efficiency. Additional UV enhancements include antireflection (AR) and solar-blind UV bandpass coatings prepared by atomic layer deposition. Quantum efficiency (QE) measurements show QE > 50% in the 100-300 nm range for detectors with simple AR coatings, and QE ≅ 80% at ~206 nm has been shown when more complex AR coatings are used. The second approach is based on avalanche photodiodes in III-nitride materials with high QE and intrinsic solar blindness.

  6. Spiral silicon drift detectors

    SciTech Connect

    Rehak, P.; Gatti, E.; Longoni, A.; Sampietro, M.; Holl, P.; Lutz, G.; Kemmer, J.; Prechtel, U.; Ziemann, T.

    1988-01-01

    An advanced large area silicon photodiode (and x-ray detector), called Spiral Drift Detector, was designed, produced and tested. The Spiral Detector belongs to the family of silicon drift detectors and is an improvement of the well known Cylindrical Drift Detector. In both detectors, signal electrons created in silicon by fast charged particles or photons are drifting toward a practically point-like collection anode. The capacitance of the anode is therefore kept at the minimum (0.1pF). The concentric rings of the cylindrical detector are replaced by a continuous spiral in the new detector. The spiral geometry detector design leads to a decrease of the detector leakage current. In the spiral detector all electrons generated at the silicon-silicon oxide interface are collected on a guard sink rather than contributing to the detector leakage current. The decrease of the leakage current reduces the parallel noise of the detector. This decrease of the leakage current and the very small capacities of the detector anode with a capacitively matched preamplifier may improve the energy resolution of Spiral Drift Detectors operating at room temperature down to about 50 electrons rms. This resolution is in the range attainable at present only by cooled semiconductor detectors. 5 refs., 10 figs.

  7. High energy X-ray photon counting imaging using linear accelerator and silicon strip detectors

    NASA Astrophysics Data System (ADS)

    Tian, Y.; Shimazoe, K.; Yan, X.; Ueda, O.; Ishikura, T.; Fujiwara, T.; Uesaka, M.; Ohno, M.; Tomita, H.; Yoshihara, Y.; Takahashi, H.

    2016-09-01

    A photon counting imaging detector system for high energy X-rays is developed for on-site non-destructive testing of thick objects. One-dimensional silicon strip (1 mm pitch) detectors are stacked to form a two-dimensional edge-on module. Each detector is connected to a 48-channel application specific integrated circuit (ASIC). The threshold-triggered events are recorded by a field programmable gate array based counter in each channel. The detector prototype is tested using 950 kV linear accelerator X-rays. The fast CR shaper (300 ns pulse width) of the ASIC makes it possible to deal with the high instant count rate during the 2 μs beam pulse. The preliminary imaging results of several metal and concrete samples are demonstrated.

  8. Photon detectors

    SciTech Connect

    Va`vra, J.

    1995-10-01

    J. Seguinot and T. Ypsilantis have recently described the theory and history of Ring Imaging Cherenkov (RICH) detectors. In this paper, I will expand on these excellent review papers, by covering the various photon detector designs in greater detail, and by including discussion of mistakes made, and detector problems encountered, along the way. Photon detectors are among the most difficult devices used in physics experiments, because they must achieve high efficiency for photon transport and for the detection of single photo-electrons. For gaseous devices, this requires the correct choice of gas gain in order to prevent breakdown and wire aging, together with the use of low noise electronics having the maximum possible amplification. In addition, the detector must be constructed of materials which resist corrosion due to photosensitive materials such as, the detector enclosure must be tightly sealed in order to prevent oxygen leaks, etc. The most critical step is the selection of the photocathode material. Typically, a choice must be made between a solid (CsI) or gaseous photocathode (TMAE, TEA). A conservative approach favors a gaseous photocathode, since it is continuously being replaced by flushing, and permits the photon detectors to be easily serviced (the air sensitive photocathode can be removed at any time). In addition, it can be argued that we now know how to handle TMAE, which, as is generally accepted, is the best photocathode material available as far as quantum efficiency is concerned. However, it is a very fragile molecule, and therefore its use may result in relatively fast wire aging. A possible alternative is TEA, which, in the early days, was rejected because it requires expensive CaF{sub 2} windows, which could be contaminated easily in the region of 8.3 eV and thus lose their UV transmission.

  9. Optical links for detector instrumentation: on-detector multi-wavelength silicon photonic transmitters

    NASA Astrophysics Data System (ADS)

    Karnick, D.; Skwierawski, P.; Schneider, M.; Eisenblätter, L.; Weber, M.

    2017-03-01

    We report on our recent progress in developing an optical transmission system based on wavelength division multiplexing (WDM) to enhance the read-out data rate of future particle detectors. The design and experimental results of the prototype of a monolithically integrated multi-wavelength transmitter are presented as well as temperature studies of electro-optic modulators. Furthermore, we show the successful permanent coupling of optical fibers to photonic chips, which is an essential step towards packaging of the opto-electronic components.

  10. Silicon Detectors

    NASA Astrophysics Data System (ADS)

    Sadrozinski, Hartmut

    2014-03-01

    The use of silicon detectors has experienced an exponential growth in accelerator and space based experiments, similar to trends in the semiconductor industry as a whole, usually paraphrased as ``Moore's Law.'' Some of the essentials for this phenomenon will be presented, together with examples of the exciting science results which it enabled. With the establishment of a ``semiconductor culture'' in universities and laboratories around the world, an increased understanding of the sensors results in thinner, faster, more radiation-resistant detectors, spawning an amazing wealth of new technologies and applications, which will be the main subject of the presentation.

  11. Amorphous silicon radiation detectors

    DOEpatents

    Street, Robert A.; Perez-Mendez, Victor; Kaplan, Selig N.

    1992-01-01

    Hydrogenated amorphous silicon radiation detector devices having enhanced signal are disclosed. Specifically provided are transversely oriented electrode layers and layered detector configurations of amorphous silicon, the structure of which allow high electric fields upon application of a bias thereby beneficially resulting in a reduction in noise from contact injection and an increase in signal including avalanche multiplication and gain of the signal produced by incoming high energy radiation. These enhanced radiation sensitive devices can be used as measuring and detection means for visible light, low energy photons and high energy ionizing particles such as electrons, x-rays, alpha particles, beta particles and gamma radiation. Particular utility of the device is disclosed for precision powder crystallography and biological identification.

  12. Amorphous silicon radiation detectors

    DOEpatents

    Street, R.A.; Perez-Mendez, V.; Kaplan, S.N.

    1992-11-17

    Hydrogenated amorphous silicon radiation detector devices having enhanced signal are disclosed. Specifically provided are transversely oriented electrode layers and layered detector configurations of amorphous silicon, the structure of which allow high electric fields upon application of a bias thereby beneficially resulting in a reduction in noise from contact injection and an increase in signal including avalanche multiplication and gain of the signal produced by incoming high energy radiation. These enhanced radiation sensitive devices can be used as measuring and detection means for visible light, low energy photons and high energy ionizing particles such as electrons, x-rays, alpha particles, beta particles and gamma radiation. Particular utility of the device is disclosed for precision powder crystallography and biological identification. 13 figs.

  13. The CDFII Silicon Detector

    SciTech Connect

    Julia Thom

    2004-07-23

    The CDFII silicon detector consists of 8 layers of double-sided silicon micro-strip sensors totaling 722,432 readout channels, making it one of the largest silicon detectors in present use by an HEP experiment. After two years of data taking, we report on our experience operating the complex device. The performance of the CDFII silicon detector is presented and its impact on physics analyses is discussed. We have already observed measurable effects from radiation damage. These results and their impact on the expected lifetime of the detector are briefly reviewed.

  14. Roadmap on silicon photonics

    NASA Astrophysics Data System (ADS)

    Thomson, David; Zilkie, Aaron; Bowers, John E.; Komljenovic, Tin; Reed, Graham T.; Vivien, Laurent; Marris-Morini, Delphine; Cassan, Eric; Virot, Léopold; Fédéli, Jean-Marc; Hartmann, Jean-Michel; Schmid, Jens H.; Xu, Dan-Xia; Boeuf, Frédéric; O'Brien, Peter; Mashanovich, Goran Z.; Nedeljkovic, M.

    2016-07-01

    Silicon photonics research can be dated back to the 1980s. However, the previous decade has witnessed an explosive growth in the field. Silicon photonics is a disruptive technology that is poised to revolutionize a number of application areas, for example, data centers, high-performance computing and sensing. The key driving force behind silicon photonics is the ability to use CMOS-like fabrication resulting in high-volume production at low cost. This is a key enabling factor for bringing photonics to a range of technology areas where the costs of implementation using traditional photonic elements such as those used for the telecommunications industry would be prohibitive. Silicon does however have a number of shortcomings as a photonic material. In its basic form it is not an ideal material in which to produce light sources, optical modulators or photodetectors for example. A wealth of research effort from both academia and industry in recent years has fueled the demonstration of multiple solutions to these and other problems, and as time progresses new approaches are increasingly being conceived. It is clear that silicon photonics has a bright future. However, with a growing number of approaches available, what will the silicon photonic integrated circuit of the future look like? This roadmap on silicon photonics delves into the different technology and application areas of the field giving an insight into the state-of-the-art as well as current and future challenges faced by researchers worldwide. Contributions authored by experts from both industry and academia provide an overview and outlook for the silicon waveguide platform, optical sources, optical modulators, photodetectors, integration approaches, packaging, applications of silicon photonics and approaches required to satisfy applications at mid-infrared wavelengths. Advances in science and technology required to meet challenges faced by the field in each of these areas are also addressed together with

  15. Label-free silicon photonic biosensor system with integrated detector array.

    PubMed

    Yan, Rongjin; Mestas, Santano P; Yuan, Guangwei; Safaisini, Rashid; Dandy, David S; Lear, Kevin L

    2009-08-07

    An integrated, inexpensive, label-free photonic waveguide biosensor system with multi-analyte capability has been implemented on a silicon photonics integrated circuit from a commercial CMOS line and tested with nanofilms. The local evanescent array coupled (LEAC) biosensor is based on a new physical phenomenon that is fundamentally different from the mechanisms of other evanescent field sensors. Increased local refractive index at the waveguide's upper surface due to the formation of a biological nanofilm causes local modulation of the evanescent field coupled into an array of photodetectors buried under the waveguide. The planar optical waveguide biosensor system exhibits sensitivity of 20%/nm photocurrent modulation in response to adsorbed bovine serum albumin (BSA) layers less than 3 nm thick. In addition to response to BSA, an experiment with patterned photoresist as well as beam propagation method simulations support the evanescent field shift principle. The sensing mechanism enables the integration of all optical and electronic components for a multi-analyte biosensor system on a chip.

  16. Nonlinear silicon photonics

    NASA Astrophysics Data System (ADS)

    Tsia, Kevin K.; Jalali, Bahram

    2010-05-01

    An intriguing optical property of silicon is that it exhibits a large third-order optical nonlinearity, with orders-ofmagnitude larger than that of silica glass in the telecommunication band. This allows efficient nonlinear optical interaction at relatively low power levels in a small footprint. Indeed, we have witnessed a stunning progress in harnessing the Raman and Kerr effects in silicon as the mechanisms for enabling chip-scale optical amplification, lasing, and wavelength conversion - functions that until recently were perceived to be beyond the reach of silicon. With all the continuous efforts developing novel techniques, nonlinear silicon photonics is expected to be able to reach even beyond the prior achievements. Instead of providing a comprehensive overview of this field, this manuscript highlights a number of new branches of nonlinear silicon photonics, which have not been fully recognized in the past. In particular, they are two-photon photovoltaic effect, mid-wave infrared (MWIR) silicon photonics, broadband Raman effects, inverse Raman scattering, and periodically-poled silicon (PePSi). These novel effects and techniques could create a new paradigm for silicon photonics and extend its utility beyond the traditionally anticipated applications.

  17. Hydrogenated amorphous silicon photonics

    NASA Astrophysics Data System (ADS)

    Narayanan, Karthik

    2011-12-01

    Silicon Photonics is quickly proving to be a suitable interconnect technology for meeting the future goals of on-chip bandwidth and low power requirements. However, it is not clear how silicon photonics will be integrated into CMOS chips, particularly microprocessors. The issue of integrating photonic circuits into electronic IC fabrication processes to achieve maximum flexibility and minimum complexity and cost is an important one. In order to minimize usage of chip real estate, it will be advantageous to integrate in three-dimensions. Hydrogenated amorphous silicon (a-Si:H) is emerging as a promising material for the 3-D integration of silicon photonics for on-chip optical interconnects. In addition, a-Si:H film can be deposited using CMOS compatible low temperature plasma-enhanced chemical vapor deposition (PECVD) process at any point in the fabrication process allowing maximum flexibility and minimal complexity. In this thesis, we demonstrate a-Si:H as a high performance alternate platform to crystalline silicon, enabling backend integration of optical interconnects in a hybrid photonic-electronic network-on-chip architecture. High quality passive devices are fabricated on a low-loss a-Si:H platform enabling wavelength division multiplexing schemes. We demonstrate a broadband all-optical modulation scheme based on free-carrier absorption effect, which can enable compact electro-optic modulators in a-Si:H. Furthermore, we comprehensively characterize the optical nonlinearities in a-Si:H and observe that a-Si:H exhibits enhanced nonlinearities as compared to crystalline silicon. Based on the enhanced nonlinearities, we demonstrate low-power four-wave mixing in a-Si:H waveguides enabling high speed all-optical devices in an a-Si:H platform. Finally, we demonstrate a novel data encoding scheme using thermal and all-optical tuning of silicon waveguides, increasing the spectral efficiency in an interconnect link.

  18. Photon detector system

    DOEpatents

    Ekstrom, Philip A.

    1981-01-01

    A photon detector includes a semiconductor device, such as a Schottky barrier diode, which has an avalanche breakdown characteristic. The diode is cooled to cryogenic temperatures to eliminate thermally generated charge carriers from the device. The diode is then biased to a voltage level exceeding the avalanche breakdown threshold level such that, upon receipt of a photon, avalanche breakdown occurs. This breakdown is detected by appropriate circuitry which thereafter reduces the diode bias potential to a level below the avalanche breakdown threshold level to terminate the avalanche condition. Subsequently, the bias potential is reapplied to the diode in preparation for detection of a subsequently received photon.

  19. Silicon photonics manufacturing.

    PubMed

    Zortman, William A; Trotter, Douglas C; Watts, Michael R

    2010-11-08

    Most demonstrations in silicon photonics are done with single devices that are targeted for use in future systems. One of the costs of operating multiple devices concurrently on a chip in a system application is the power needed to properly space resonant device frequencies on a system's frequency grid. We asses this power requirement by quantifying the source and impact of process induced resonant frequency variation for microdisk resonators across individual die, entire wafers and wafer lots for separate process runs. Additionally we introduce a new technique, utilizing the Transverse Electric (TE) and Transverse Magnetic (TM) modes in microdisks, to extract thickness and width variations across wafers and dice. Through our analysis we find that a standard six inch Silicon on Insulator (SOI) 0.35 μm process controls microdisk resonant frequencies for the TE fundamental resonances to within 1 THz across a wafer and 105 GHz within a single die. Based on demonstrated thermal tuner technology, a stable manufacturing process exhibiting this level of variation can limit the resonance trimming power per resonant device to 231 μW. Taken in conjunction with the power to compensate for thermal environmental variations, the expected power requirement to compensate for fabrication-induced non-uniformities is 17% of that total. This leads to the prediction that thermal tuning efficiency is likely to have the most dominant impact on the overall power budget of silicon photonics resonator technology.

  20. Domestic Development of Single-Photon Emission Computed Tomography (SPECT) Unit with Detector based on Silicon Photomultipliers

    NASA Astrophysics Data System (ADS)

    Grishakov, S.; Ryzhikova, O.; Sergienko, V.; Ansheles, A.; Novikov, S.

    2017-01-01

    The idea of creating a single-photon emission computed tomography unit with solid-state photomultipliers is not new [1], as the problems of analog-to-digital conversion with a lot of noise and a wide range of values of intrinsic spatial resolution of the detector in a center and relevant fields of view could not be solved by means of gamma-camera detector architectures based on vacuum photomultipliers. This paper offers a new SPECT imaging solution that is free from these problems.

  1. The Impact of Silicon Photonics

    DTIC Science & Technology

    2007-08-29

    integrated photonics 16. SECURITY CLASSIFICATION OF: 17.LIMITATION OF ABSTRACT 18.NUMBER OF PAGES 19a. NAME OF RESPONSIBLE PERSON Richard Soref...The impact of present and potential applications is discussed. key words: silicon, optoelectronics, integrated photonics 1. Introduction Silicon

  2. All-silicon photonic crystal photoconductor on silicon-on-insulator at telecom wavelength.

    PubMed

    Haret, Laurent-Daniel; Checoury, Xavier; Han, Zheng; Boucaud, Philippe; Combrié, Sylvain; De Rossi, Alfredo

    2010-11-08

    We demonstrate an all-silicon photodetector working at telecom wavelength. The device is a simple metal-semiconductor-metal detector fabricated on silicon-on-insulator. A two-dimensional photonic crystal nanocavity (Q=60,000) is used to increase the response that arises from the linear and two-photon absorption of silicon. The responsivity of the detector is about 20 mA/W and its bandwidth is larger than 1 GHz.

  3. Silicon active photonic devices

    NASA Astrophysics Data System (ADS)

    Dimitropoulos, Dimitrios

    Active photonic devices utilizing the optical nonlinearities of silicon have emerged in the last 5 years and the effort for commercial photonic devices in the material that has been the workhorse of electronics has been building up since. This dissertation presents the theory for some of these devices. We are concerned herein with CW lasers, amplifiers and wavelength converters that are based on the Raman effect. There have already been cursory experimental demonstrations of these devices and some of their limitations are already apparent. Most of the limitations observed are because of the appearance of effects that are competing with stimulated Raman scattering. Under the high optical powers that are necessary for the Raman effect (tens to hundrends of mW's) the process of optical two-photon (TPA) absorption occurs. The absorption of optical power that it causes itself is weak but in the process electrons and holes are generated which can further absorb light through the free-carrier absorption effect (FCA). The effective "lifetime" that these carriers have determines the magnitude of the FCA loss. We present a model for the carrier lifetime in Silicon-On-Insulator (SOI) waveguides and numerical simulations to understand how this critical parameter varies and how it can be controlled. A p-i-n junction built along SOI waveguides can help achieve lifetime of the order of 20--100 ps but the price one has to pay is on-chip electrical power consumption on the order of 100's of mWs. We model CW Raman lasers and we find that the carrier lifetime reduces the output power. If the carrier lifetime exceeds a certain "critical" value optical losses become overwhelming and lasing is impossible. As we show, in amplifiers, the nonlinear loss does not only result in diminished gain, but also in a higher noise figure. Finally the effect of Coherent anti-Stokes Raman scattering (CARS) is examined. The effect is important because with a pump frequency at 1434nm coherent power

  4. Luneburg lens in silicon photonics.

    PubMed

    Di Falco, Andrea; Kehr, Susanne C; Leonhardt, Ulf

    2011-03-14

    The Luneburg lens is an aberration-free lens that focuses light from all directions equally well. We fabricated and tested a Luneburg lens in silicon photonics. Such fully-integrated lenses may become the building blocks of compact Fourier optics on chips. Furthermore, our fabrication technique is sufficiently versatile for making perfect imaging devices on silicon platforms.

  5. Ultra-fast silicon detectors

    NASA Astrophysics Data System (ADS)

    Sadrozinski, H. F.-W.; Ely, S.; Fadeyev, V.; Galloway, Z.; Ngo, J.; Parker, C.; Petersen, B.; Seiden, A.; Zatserklyaniy, A.; Cartiglia, N.; Marchetto, F.; Bruzzi, M.; Mori, R.; Scaringella, M.; Vinattieri, A.

    2013-12-01

    We propose to develop a fast, thin silicon sensor with gain capable to concurrently measure with high precision the space (∼10 μm) and time (∼10 ps) coordinates of a particle. This will open up new application of silicon detector systems in many fields. Our analysis of detector properties indicates that it is possible to improve the timing characteristics of silicon-based tracking sensors, which already have sufficient position resolution, to achieve four-dimensional high-precision measurements. The basic sensor characteristics and the expected performance are listed, the wide field of applications are mentioned and the required R&D topics are discussed.

  6. Rad-Hard Silicon Detectors

    NASA Astrophysics Data System (ADS)

    Giorgi, Marco

    2005-06-01

    For the next generation of High Energy Physics (HEP) Experiments silicon microstrip detectors working in harsh radiation environments with excellent performances are necessary. The irradiation causes bulk and surface damages that modify the electrical properties of the detector. Solutions like AC coupled strips, overhanging metal contact, <100> crystal lattice orientation, low resistivity n-bulk and Oxygenated substrate are studied for rad-hard detectors. The paper presents an outlook of these technologies.

  7. ePIXfab: the silicon photonics platform

    NASA Astrophysics Data System (ADS)

    Khanna, Amit; Drissi, Youssef; Dumon, Pieter; Baets, Roel; Absil, Philippe; Pozo, J.; Lo Cascio, D. M. R.; Fournier, M.; Fédéli, J.-M.; Fulbert, L.; Zimmermann, L.; Tillack, B.; Aalto, T.; O'Brien, P.; Deptuck, D.; Xu, J.; Gale, D.

    2013-05-01

    ePIXfab-The European Silicon Photonics Support Center continues to provide state-of-the-art silicon photonics solutions to academia and industry for prototyping and research. ePIXfab is a consortium of EU research centers providing diverse expertise in the silicon photonics food chain, from training users in designing silicon photonics chips to fiber pigtailed chips. While ePIXfab provides world-wide users access to advanced silicon photonics it also focuses its attention to expanding the silicon photonics infrastructure through a network of design houses, access partners and industrial collaborations.

  8. Belle II Silicon Vertex Detector

    NASA Astrophysics Data System (ADS)

    Dutta, D.; Adamczyk, K.; Aihara, H.; Angelini, C.; Aziz, T.; Babu, V.; Bacher, S.; Bahinipati, S.; Barberio, E.; Baroncelli, Ti.; Baroncelli, To.; Basith, A. K.; Batignani, G.; Bauer, A.; Behera, P. K.; Bergauer, T.; Bettarini, S.; Bhuyan, B.; Bilka, T.; Bosi, F.; Bosisio, L.; Bozek, A.; Buchsteiner, F.; Bulla, L.; Caria, G.; Casarosa, G.; Ceccanti, M.; Červenkov, D.; Chendvankar, S. R.; Dash, N.; De Pietro, G.; Divekar, S. T.; Doležal, Z.; Forti, F.; Friedl, M.; Hara, K.; Higuchi, T.; Horiguchi, T.; Irmler, C.; Ishikawa, A.; Jeon, H. B.; Joo, C.; Kandra, J.; Kambara, N.; Kang, K. H.; Kawasaki, T.; Kodyš, P.; Kohriki, T.; Koike, S.; Kolwalkar, M. M.; Kumar, R.; Kun, W.; Kvasnička, P.; La Licata, C.; Lanceri, L.; Lettenbicher, J.; Libby, J.; Lueck, T.; Maki, M.; Mammini, P.; Mayekar, S. N.; Mohanty, G. B.; Mohanty, S.; Morii, T.; Nakamura, K. R.; Natkaniec, Z.; Onuki, Y.; Ostrowicz, W.; Paladino, A.; Paoloni, E.; Park, H.; Pilo, F.; Profeti, A.; Rashevskaya, I.; Rao, K. K.; Rizzo, G.; Resmi, P. K.; Rozanska, M.; Sasaki, J.; Sato, N.; Schultschik, S.; Schwanda, C.; Seino, Y.; Shimizu, N.; Stypula, J.; Suzuki, J.; Tanaka, S.; Taylor, G. N.; Thalmeier, R.; Thomas, R.; Tsuboyama, T.; Uozumi, S.; Urquijo, P.; Vitale, L.; Watanuki, S.; Watanabe, M.; Watson, I. J.; Webb, J.; Wiechczynski, J.; Williams, S.; Würkner, B.; Yamamoto, H.; Yin, H.; Yoshinobu, T.; Zani, L.

    2017-02-01

    The Belle II experiment at the SuperKEKB asymmetric energy e+e‑ collider in KEK, Japan will operate at an instantaneous luminosity 40 times larger than that of its predecessor, Belle. It is built with an aim of collecting a huge amount of data (50 ab‑1 by 2025) for precise CP violation measurements and new physics search. Thus, we need an accurate vertex determination and reconstruction of low momentum tracks which will be achieved with the help of vertex detector (VXD). The Belle II VXD consists of two layers of DEPFET pixels (`Pixel Detector') and four layers of double-sided silicon microstrip sensors (`Silicon Vertex Detector'), assembled over carbon fibre ribs. In this paper, we discuss about the Belle II Silicon Vertex Detector, especially its design and key features; we also present its module (`ladder') assembly and testing procedures.

  9. The MIC photon counting detector

    NASA Astrophysics Data System (ADS)

    Fordham, J. L. A.; Bone, D. A.; Oldfield, M. K.; Bellis, J. G.; Norton, T. J.

    1992-12-01

    The MIC (Microchannel plate Intensified CCD (Charge Coupled Device)) detector is an advanced performance Micro Channel Plate (MCP) intensified CCD photon counting detector developed for high resolution, high dynamic range, astronomical applications. The heart of the detector is an MCP intensifier developed specifically for photon counting applications. The maximum detector format is 3072 by 2304 pixels. The measured resolution of the detector system is 18 micrometers FWHM at 490 nm. The detector is linear to approximately 1,000,000 events/detector area/sec on a flat field and linear to count rates up to 200 events/object/s on star images. Two versions of the system have been developed. The first for ground based astronomical applications based around a 40 mm diameter intensifier, was proven in trials at a number of large optical telescopes. The second, specifically for the ESA X-Ray Multi Mirror Mission (XMM), where the MIC has been accepted as the blue detector for the incorporated Optical Monitor (OM). For the XMM-OM, the system is based around a 25 mm diameter intensifier. At present, under development, is a 75 mm diameter version of the detector which will have a maximum format of 6144 by 4608 pixels. Details of the MIC detector and its performance are presented.

  10. Simulation study of an energy sensitive photon counting silicon strip detector for computed tomography: identifying strengths and weaknesses and developing work-arounds

    NASA Astrophysics Data System (ADS)

    Bornefalk, Hans; Xu, Cheng; Svensson, Christer; Danielsson, Mats

    2010-04-01

    We model the effect of signal pile-up on the energy resolution of a photon counting silicon detector designed for high flux spectral CT with sub-millimeter pixel size. Various design parameters, such as bias voltage, lower threshold level for discarding of electronic noise and the entire electronic read out chain are modeled and realistic parameter settings are determined. We explicitly model the currents induced on the collection electrodes of a pixel and superimpose signals emanating from events in neighboring pixels, either due to charge sharing or signals induced during charge collection. Electronic noise is added to the pulse train before feeding it through a model of the read out electronics where the pulse height spectrum is saved to yield the detector energy response function. The main result of this study is that a lower threshold of 5 keV and a rather long time constant of the shaping filter (τ0 = 30 ns) are needed to discard induced pulses from events in neighboring pixels. These induction currents occur even if no charge is being deposited in the analyzed pixel from the event in the neighboring pixel. There is also only a limited gain in energy resolution by increasing the bias voltage to 1000 V from 600 V. We show that with these settings the resulting energy resolution, as measured by the FWHM/E of the photo peak, is 5% at 70 keV.

  11. Silicon photonics: some remaining challenges

    NASA Astrophysics Data System (ADS)

    Reed, G. T.; Topley, R.; Khokhar, A. Z.; Thompson, D. J.; Stanković, S.; Reynolds, S.; Chen, X.; Soper, N.; Mitchell, C. J.; Hu, Y.; Shen, L.; Martinez-Jimenez, G.; Healy, N.; Mailis, S.; Peacock, A. C.; Nedeljkovic, M.; Gardes, F. Y.; Soler Penades, J.; Alonso-Ramos, C.; Ortega-Monux, A.; Wanguemert-Perez, G.; Molina-Fernandez, I.; Cheben, P.; Mashanovich, G. Z.

    2016-03-01

    This paper discusses some of the remaining challenges for silicon photonics, and how we at Southampton University have approached some of them. Despite phenomenal advances in the field of Silicon Photonics, there are a number of areas that still require development. For short to medium reach applications, there is a need to improve the power consumption of photonic circuits such that inter-chip, and perhaps intra-chip applications are viable. This means that yet smaller devices are required as well as thermally stable devices, and multiple wavelength channels. In turn this demands smaller, more efficient modulators, athermal circuits, and improved wavelength division multiplexers. The debate continues as to whether on-chip lasers are necessary for all applications, but an efficient low cost laser would benefit many applications. Multi-layer photonics offers the possibility of increasing the complexity and effectiveness of a given area of chip real estate, but it is a demanding challenge. Low cost packaging (in particular, passive alignment of fibre to waveguide), and effective wafer scale testing strategies, are also essential for mass market applications. Whilst solutions to these challenges would enhance most applications, a derivative technology is emerging, that of Mid Infra-Red (MIR) silicon photonics. This field will build on existing developments, but will require key enhancements to facilitate functionality at longer wavelengths. In common with mainstream silicon photonics, significant developments have been made, but there is still much left to do. Here we summarise some of our recent work towards wafer scale testing, passive alignment, multiplexing, and MIR silicon photonics technology.

  12. Belle II silicon vertex detector

    NASA Astrophysics Data System (ADS)

    Adamczyk, K.; Aihara, H.; Angelini, C.; Aziz, T.; Babu, V.; Bacher, S.; Bahinipati, S.; Barberio, E.; Baroncelli, Ti.; Baroncelli, To.; Basith, A. K.; Batignani, G.; Bauer, A.; Behera, P. K.; Bergauer, T.; Bettarini, S.; Bhuyan, B.; Bilka, T.; Bosi, F.; Bosisio, L.; Bozek, A.; Buchsteiner, F.; Casarosa, G.; Ceccanti, M.; Červenkov, D.; Chendvankar, S. R.; Dash, N.; Divekar, S. T.; Doležal, Z.; Dutta, D.; Enami, K.; Forti, F.; Friedl, M.; Hara, K.; Higuchi, T.; Horiguchi, T.; Irmler, C.; Ishikawa, A.; Jeon, H. B.; Joo, C. W.; Kandra, J.; Kang, K. H.; Kato, E.; Kawasaki, T.; Kodyš, P.; Kohriki, T.; Koike, S.; Kolwalkar, M. M.; Kvasnička, P.; Lanceri, L.; Lettenbicher, J.; Maki, M.; Mammini, P.; Mayekar, S. N.; Mohanty, G. B.; Mohanty, S.; Morii, T.; Nakamura, K. R.; Natkaniec, Z.; Negishi, K.; Nisar, N. K.; Onuki, Y.; Ostrowicz, W.; Paladino, A.; Paoloni, E.; Park, H.; Pilo, F.; Profeti, A.; Rashevskaya, I.; Rao, K. K.; Rizzo, G.; Rozanska, M.; Sandilya, S.; Sasaki, J.; Sato, N.; Schultschik, S.; Schwanda, C.; Seino, Y.; Shimizu, N.; Stypula, J.; Suzuki, J.; Tanaka, S.; Tanida, K.; Taylor, G. N.; Thalmeier, R.; Thomas, R.; Tsuboyama, T.; Uozumi, S.; Urquijo, P.; Vitale, L.; Volpi, M.; Watanuki, S.; Watson, I. J.; Webb, J.; Wiechczynski, J.; Williams, S.; Würkner, B.; Yamamoto, H.; Yin, H.; Yoshinobu, T.

    2016-09-01

    The Belle II experiment at the SuperKEKB collider in Japan is designed to indirectly probe new physics using approximately 50 times the data recorded by its predecessor. An accurate determination of the decay-point position of subatomic particles such as beauty and charm hadrons as well as a precise measurement of low-momentum charged particles will play a key role in this pursuit. These will be accomplished by an inner tracking device comprising two layers of pixelated silicon detector and four layers of silicon vertex detector based on double-sided microstrip sensors. We describe herein the design, prototyping and construction efforts of the Belle-II silicon vertex detector.

  13. The CDF Silicon Vertex Detector

    SciTech Connect

    Tkaczyk, S.; Carter, H.; Flaugher, B.

    1993-09-01

    A silicon strip vertex detector was designed, constructed and commissioned at the CDF experiment at the Tevatron collider at Fermilab. The mechanical design of the detector, its cooling and monitoring are presented. The front end electronics employing a custom VLSI chip, the readout electronics and various components of the SVX system are described. The system performance and the experience with the operation of the detector in the radiation environment are discussed. The device has been taking colliding beams data since May of 1992, performing at its best design specifications and enhancing the physics program of CDF.

  14. Single photon detector design features

    NASA Astrophysics Data System (ADS)

    Zaitsev, Sergey V.; Kurochkin, Vladimir L.; Kurochkin, Yury V.

    2016-12-01

    In the report are discussed the laboratory test results of SPAD detectors with InGaAs / InP avalanche photodiodes, operating in Geiger mode. Device operating in synchronous mode with the dead timer setting for proper working conditions of photodiodes. The report materials will showing the functional block diagram of the detector, real operating signals in the receiver path and clock circuits and main results of measurements. The input signal of the synchronous detector is the clock, which determines the time positions of expected photons arrival. Increasing the clock speed 1-300 MHz or getting more time positions of the time grid, we provide increased capacity for time position code of signals, when QKD information transmitted over the nets. At the same time, the maximum attainable speed of photon reception is limited by diode dead time. Diode quantum noise are minimized by inclusion of a special time interval - dead time 0.1-10 usec, after each received and registered a photon. The lowest attainable value of the dead time is determined as a compromise between transients in electrical circuits, passive avalanche «quenching» circuit and thermal transients cooling crystal diode, after each avalanche pass though photodiode. Achievable time and speed parameters are discussed with specific examples of detectors.

  15. Performance of ultra-fast silicon detectors

    NASA Astrophysics Data System (ADS)

    Cartiglia, N.; Baselga, M.; Dellacasa, G.; Ely, S.; Fadeyev, V.; Galloway, Z.; Garbolino, S.; Marchetto, F.; Martoiu, S.; Mazza, G.; Ngo, J.; Obertino, M.; Parker, C.; Rivetti, A.; Shumacher, D.; F-W Sadrozinski, H.; Seiden, A.; Zatserklyaniy, A.

    2014-02-01

    The development of Low-Gain Avalanche Detectors has opened up the possibility of manufacturing silicon detectors with signal larger than that of traditional sensors. In this paper we explore the timing performance of Low-Gain Avalanche Detectors, and in particular we demonstrate the possibility of obtaining ultra-fast silicon detector with time resolution of less than 20 picosecond.

  16. Silicon Detectors for PET and SPECT

    NASA Astrophysics Data System (ADS)

    Cochran, Eric R.

    Silicon detectors use state-of-the-art electronics to take advantage of the semiconductor properties of silicon to produce very high resolution radiation detectors. These detectors have been a fundamental part of high energy, nuclear, and astroparticle physics experiments for decades, and they hold great potential for significant gains in both PET and SPECT applications. Two separate prototype nuclear medicine imaging systems have been developed to explore this potential. Both devices take advantage of the unique properties of high resolution pixelated silicon detectors, designed and developed as part of the CIMA collaboration and built at The Ohio State University. The first prototype is a Compton SPECT imaging system. Compton SPECT, also referred to as electronic collimation, is a fundamentally different approach to single photon imaging from standard gamma cameras. It removes the inherent coupling of spatial resolution and sensitivity in mechanically collimated systems and provides improved performance at higher energies. As a result, Compton SPECT creates opportunities for the development of new radiopharmaceuticals based on higher energy isotopes as well as opportunities to expand the use of current isotopes such as 131I due to the increased resolution and sensitivity. The Compton SPECT prototype consists of a single high resolution silicon detector, configured in a 2D geometry, in coincidence with a standard NaI scintillator detector. Images of point sources have been taken for 99mTc (140 keV), 131I (364keV), and 22Na (511 keV), demonstrating the performance of high resolution silicon detectors in a Compton SPECT system. Filtered back projection image resolutions of 10 mm, 7.5 mm, and 6.7 mm were achieved for the three different sources respectively. The results compare well with typical SPECT resolutions of 5-15 mm and validate the claims of improved performance in Compton SPECT imaging devices at higher source energies. They also support the potential of

  17. Quantum interference in heterogeneous superconducting-photonic circuits on a silicon chip.

    PubMed

    Schuck, C; Guo, X; Fan, L; Ma, X; Poot, M; Tang, H X

    2016-01-21

    Quantum information processing holds great promise for communicating and computing data efficiently. However, scaling current photonic implementation approaches to larger system size remains an outstanding challenge for realizing disruptive quantum technology. Two main ingredients of quantum information processors are quantum interference and single-photon detectors. Here we develop a hybrid superconducting-photonic circuit system to show how these elements can be combined in a scalable fashion on a silicon chip. We demonstrate the suitability of this approach for integrated quantum optics by interfering and detecting photon pairs directly on the chip with waveguide-coupled single-photon detectors. Using a directional coupler implemented with silicon nitride nanophotonic waveguides, we observe 97% interference visibility when measuring photon statistics with two monolithically integrated superconducting single-photon detectors. The photonic circuit and detector fabrication processes are compatible with standard semiconductor thin-film technology, making it possible to implement more complex and larger scale quantum photonic circuits on silicon chips.

  18. Quantum interference in heterogeneous superconducting-photonic circuits on a silicon chip

    PubMed Central

    Schuck, C.; Guo, X.; Fan, L.; Ma, X.; Poot, M.; Tang, H. X.

    2016-01-01

    Quantum information processing holds great promise for communicating and computing data efficiently. However, scaling current photonic implementation approaches to larger system size remains an outstanding challenge for realizing disruptive quantum technology. Two main ingredients of quantum information processors are quantum interference and single-photon detectors. Here we develop a hybrid superconducting-photonic circuit system to show how these elements can be combined in a scalable fashion on a silicon chip. We demonstrate the suitability of this approach for integrated quantum optics by interfering and detecting photon pairs directly on the chip with waveguide-coupled single-photon detectors. Using a directional coupler implemented with silicon nitride nanophotonic waveguides, we observe 97% interference visibility when measuring photon statistics with two monolithically integrated superconducting single-photon detectors. The photonic circuit and detector fabrication processes are compatible with standard semiconductor thin-film technology, making it possible to implement more complex and larger scale quantum photonic circuits on silicon chips. PMID:26792424

  19. Comparative study of silicon detectors

    SciTech Connect

    Allier, C.P.; Valk, H.; Huizenga, J.; Bom, V.R.; Hollander, R.W.; Eijk, C.W.E. van

    1998-06-01

    The authors studied three different types of silicon sensors: PIN diodes, circular drift detectors, both made at the Delft University of Technology (DUT), and Hamamatsu S5345 avalanche photodiodes. Measurements have been carried out in the same optimized experimental setup, both at room temperature and at low temperatures. Comparison is made for direct X-ray detection and CsI(Tl) scintillation light readout.

  20. Cryogenic Silicon Detectors with Implanted Contacts for the Detection of Visible Photons Using the Neganov-Trofimov-Luke Effect

    NASA Astrophysics Data System (ADS)

    Defay, X.; Mondragon, E.; Willers, M.; Langenkämper, A.; Lanfranchi, J.-C.; Münster, A.; Zöller, A.; Wawoczny, S.; Steiger, H.; Hitzler, F.; Bruhn, C.; Schönert, S.; Potzel, W.; Chapellier, M.

    2016-07-01

    There is a common need in astroparticle experiments such as direct dark matter detection, double-beta decay without emission of neutrinos [0 ν β β ] and coherent neutrino nucleus scattering experiments for light detectors with a very low energy threshold. By employing the Neganov-Trofimov-Luke Effect, the thermal signal of particle interactions in a semiconductor absorber operated at cryogenic temperatures can be amplified by drifting the photogenerated electrons and holes in an electric field. This technology is not used in current experiments, in particular because of a reduction of the signal amplitude with time which is due to trapping of the charges within the absorber. We present here the first results of a novel type of Neganov-Trofimov-Luke Effect light detector with an electric field configuration designed to improve the charge collection within the semiconductor.

  1. Novel Photon-Counting Detectors for Free-Space Communication

    NASA Technical Reports Server (NTRS)

    Krainak, Michael A.; Yang, Guan; Sun, Xiaoli; Lu, Wei; Merritt, Scott; Beck, Jeff

    2016-01-01

    We present performance data for novel photon counting detectors for free space optical communication. NASA GSFC is testing the performance of three novel photon counting detectors 1) a 2x8 mercury cadmium telluride avalanche array made by DRS Inc. 2) a commercial 2880 silicon avalanche photodiode array and 3) a prototype resonant cavity silicon avalanche photodiode array. We will present and compare dark count, photon detection efficiency, wavelength response and communication performance data for these detectors. We discuss system wavelength trades and architectures for optimizing overall communication link sensitivity, data rate and cost performance. The HgCdTe APD array has photon detection efficiencies of greater than 50 were routinely demonstrated across 5 arrays, with one array reaching a maximum PDE of 70. High resolution pixel-surface spot scans were performed and the junction diameters of the diodes were measured. The junction diameter was decreased from 31 m to 25 m resulting in a 2x increase in e-APD gain from 470 on the 2010 array to 1100 on the array delivered to NASA GSFC. Mean single photon SNRs of over 12 were demonstrated at excess noise factors of 1.2-1.3.The commercial silicon APD array has a fast output with rise times of 300ps and pulse widths of 600ps. Received and filtered signals from the entire array are multiplexed onto this single fast output. The prototype resonant cavity silicon APD array is being developed for use at 1 micron wavelength.

  2. Silicon photonics broadband modulation-based isolator.

    PubMed

    Doerr, C R; Chen, L; Vermeulen, D

    2014-02-24

    We discuss an optical isolator design based on tandem phase modulators in a long interferometer. It provides low-loss, broadband isolation in a photonic integrated circuit without requiring special materials or fabrication steps. It was demonstrated in silicon photonics.

  3. The Heavy Photon Search test detector

    NASA Astrophysics Data System (ADS)

    Battaglieri, M.; Boyarinov, S.; Bueltmann, S.; Burkert, V.; Celentano, A.; Charles, G.; Cooper, W.; Cuevas, C.; Dashyan, N.; DeVita, R.; Desnault, C.; Deur, A.; Egiyan, H.; Elouadrhiri, L.; Essig, R.; Fadeyev, V.; Field, C.; Freyberger, A.; Gershtein, Y.; Gevorgyan, N.; Girod, F.-X.; Graf, N.; Graham, M.; Griffioen, K.; Grillo, A.; Guidal, M.; Haller, G.; Hansson Adrian, P.; Herbst, R.; Holtrop, M.; Jaros, J.; Kaneta, S.; Khandaker, M.; Kubarovsky, A.; Kubarovsky, V.; Maruyama, T.; McCormick, J.; Moffeit, K.; Moreno, O.; Neal, H.; Nelson, T.; Niccolai, S.; Odian, A.; Oriunno, M.; Paremuzyan, R.; Partridge, R.; Phillips, S. K.; Rauly, E.; Raydo, B.; Reichert, J.; Rindel, E.; Rosier, P.; Salgado, C.; Schuster, P.; Sharabian, Y.; Sokhan, D.; Stepanyan, S.; Toro, N.; Uemura, S.; Ungaro, M.; Voskanyan, H.; Walz, D.; Weinstein, L. B.; Wojtsekhowski, B.

    2015-03-01

    The Heavy Photon Search (HPS), an experiment to search for a hidden sector photon in fixed target electroproduction, is preparing for installation at the Thomas Jefferson National Accelerator Facility (JLab) in the Fall of 2014. As the first stage of this project, the HPS Test Run apparatus was constructed and operated in 2012 to demonstrate the experiment's technical feasibility and to confirm that the trigger rates and occupancies are as expected. This paper describes the HPS Test Run apparatus and readout electronics and its performance. In this setting, a heavy photon can be identified as a narrow peak in the e+e- invariant mass spectrum above the trident background or as a narrow invariant mass peak with a decay vertex displaced from the production target, so charged particle tracking and vertexing are needed for its detection. In the HPS Test Run, charged particles are measured with a compact forward silicon microstrip tracker inside a dipole magnet. Electromagnetic showers are detected in a PbW04 crystal calorimeter situated behind the magnet, and are used to trigger the experiment and identify electrons and positrons. Both detectors are placed close to the beam line and split top-bottom. This arrangement provides sensitivity to low-mass heavy photons, allows clear passage of the unscattered beam, and avoids the spray of degraded electrons coming from the target. The discrimination between prompt and displaced e+e- pairs requires the first layer of silicon sensors be placed only 10 cm downstream of the target. The expected signal is small, and the trident background huge, so the experiment requires very large statistics. Accordingly, the HPS Test Run utilizes high-rate readout and data acquisition electronics and a fast trigger to exploit the essentially 100% duty cycle of the CEBAF accelerator at JLab.

  4. A micron resolution optical scanner for characterization of silicon detectors

    SciTech Connect

    Shukla, R. A.; Dugad, S. R. Gopal, A. V.; Gupta, S. K.; Prabhu, S. S.; Garde, C. S.

    2014-02-15

    The emergence of high position resolution (∼10 μm) silicon detectors in recent times have highlighted the urgent need for the development of new automated optical scanners of micron level resolution suited for characterizing microscopic features of these detectors. More specifically, for the newly developed silicon photo-multipliers (SiPM) that are compact, possessing excellent photon detection efficiency with gain comparable to photo-multiplier tube. In a short time, since their invention the SiPMs are already being widely used in several high-energy physics and astrophysics experiments as the photon readout element. The SiPM is a high quantum efficiency, multi-pixel photon counting detector with fast timing and high gain. The presence of a wide variety of photo sensitive silicon detectors with high spatial resolution requires their performance evaluation to be carried out by photon beams of very compact spot size. We have designed a high resolution optical scanner that provides a monochromatic focused beam on a target plane. The transverse size of the beam was measured by the knife-edge method to be 1.7 μm at 1 − σ level. Since the beam size was an order of magnitude smaller than the typical feature size of silicon detectors, this optical scanner can be used for selective excitation of these detectors. The design and operational details of the optical scanner, high precision programmed movement of target plane (0.1 μm) integrated with general purpose data acquisition system developed for recording static and transient response photo sensitive silicon detector are reported in this paper. Entire functionality of scanner is validated by using it for selective excitation of individual pixels in a SiPM and identifying response of active and dead regions within SiPM. Results from these studies are presented in this paper.

  5. A micron resolution optical scanner for characterization of silicon detectors.

    PubMed

    Shukla, R A; Dugad, S R; Garde, C S; Gopal, A V; Gupta, S K; Prabhu, S S

    2014-02-01

    The emergence of high position resolution (∼10 μm) silicon detectors in recent times have highlighted the urgent need for the development of new automated optical scanners of micron level resolution suited for characterizing microscopic features of these detectors. More specifically, for the newly developed silicon photo-multipliers (SiPM) that are compact, possessing excellent photon detection efficiency with gain comparable to photo-multiplier tube. In a short time, since their invention the SiPMs are already being widely used in several high-energy physics and astrophysics experiments as the photon readout element. The SiPM is a high quantum efficiency, multi-pixel photon counting detector with fast timing and high gain. The presence of a wide variety of photo sensitive silicon detectors with high spatial resolution requires their performance evaluation to be carried out by photon beams of very compact spot size. We have designed a high resolution optical scanner that provides a monochromatic focused beam on a target plane. The transverse size of the beam was measured by the knife-edge method to be 1.7 μm at 1 - σ level. Since the beam size was an order of magnitude smaller than the typical feature size of silicon detectors, this optical scanner can be used for selective excitation of these detectors. The design and operational details of the optical scanner, high precision programmed movement of target plane (0.1 μm) integrated with general purpose data acquisition system developed for recording static and transient response photo sensitive silicon detector are reported in this paper. Entire functionality of scanner is validated by using it for selective excitation of individual pixels in a SiPM and identifying response of active and dead regions within SiPM. Results from these studies are presented in this paper.

  6. Solid-state single-photon detectors

    NASA Astrophysics Data System (ADS)

    Zappa, Franco; Lacaita, Andrea L.; Cova, Sergio D.; Lovati, Piergiorgio G.

    1996-04-01

    This paper reviews the state of the art of some new photon-counting detectors. We measured the performance of various commercial silicon, germanium, and InGaAs/InP single-photon avalanche diodes (SPADs) in the 0.8- to 1.55-micrometer wavelength range. Optimized silicon devices reach 70% quantum efficiency at 800 nm and can work up to 1.1 micrometer. However, germanium and InGaAs SPADs are sensitive up to 1.4 and 1.6 micrometers, respectively, with a few percent quantum efficiency. In all samples we measured noise equivalent powers less than 10-15 W/Hz1/2. Compared with vacuum tubes, SPADs have different advantages such as reliability, roughness, low voltage and simple electronic requirements. Furthermore, it is easy to arrange them in the form of arrays, which are required in astronomy and luminescence measurements. Moreover we investigated the performance of a SPAD germanium quad sensor. By using proper driving electronics we avoided optical cross-talk between pixels and we present here the preliminary results of our experiments.

  7. Radiation experience with the CDF silicon detectors

    SciTech Connect

    Husemann, Ulrich; /Rochester U.

    2005-11-01

    The silicon detectors of the CDF experiment at the Tevatron collider are operated in a harsh radiation environment. The lifetime of the silicon detectors is limited by radiation damage, and beam-related incidents are an additional risk. This article describes the impact of beam-related incidents on detector operation and the effects of radiation damage on electronics noise and the silicon sensors. From measurements of the depletion voltage as a function of the integrated luminosity, estimates of the silicon detector lifetime are derived.

  8. Portable triple silicon detector telescope spectrometer for skin dosimetry

    NASA Astrophysics Data System (ADS)

    Helt-Hansen, J.; Larsen, H. E.; Christensen, P.

    1999-12-01

    The features of a newly developed portable beta telescope spectrometer are described. The detector probe uses three silicon detectors with the thickness: 50μm/150μm/7000μm covered by a 2μm thick titanium window. Rejection of photon contributions from mixed beta/photon exposures is achieved by coincidence requirements between the detector signals. The silicon detectors, together with cooling aggregate, bias supplies, preamplifiers and charge generation for calibration are contained in a handy detector probe. Through a 3- or 10-m cable the detector unit is connected to a compact, portable processing unit including a laptop computer executing control, monitor, histogram and display tasks. The use of digital signal processing at an early stage of the signal chain has facilitated the achievement of a compact, low-weight device. 256 channels are available for each of the three detectors. The LabVIEWTM software distributed by National Instruments was used for all program developments for the spectrometer, comprising also the capability of evaluating the absorbed dose rates from the measured beta spectra. The report describes the capability of the telescope spectrometer to measure beta and photon spectra as well as beta dose rates in mixed beta/photon radiation fields. It also describes the main features of the digital signal-processing electronics.

  9. Cascaded systems analysis of photon counting detectors

    SciTech Connect

    Xu, J.; Zbijewski, W.; Gang, G.; Stayman, J. W.; Taguchi, K.; Carrino, J. A.; Lundqvist, M.; Fredenberg, E.; Siewerdsen, J. H.

    2014-10-15

    Purpose: Photon counting detectors (PCDs) are an emerging technology with applications in spectral and low-dose radiographic and tomographic imaging. This paper develops an analytical model of PCD imaging performance, including the system gain, modulation transfer function (MTF), noise-power spectrum (NPS), and detective quantum efficiency (DQE). Methods: A cascaded systems analysis model describing the propagation of quanta through the imaging chain was developed. The model was validated in comparison to the physical performance of a silicon-strip PCD implemented on an experimental imaging bench. The signal response, MTF, and NPS were measured and compared to theory as a function of exposure conditions (70 kVp, 1–7 mA), detector threshold, and readout mode (i.e., the option for coincidence detection). The model sheds new light on the dependence of spatial resolution, charge sharing, and additive noise effects on threshold selection and was used to investigate the factors governing PCD performance, including the fundamental advantages and limitations of PCDs in comparison to energy-integrating detectors (EIDs) in the linear regime for which pulse pileup can be ignored. Results: The detector exhibited highly linear mean signal response across the system operating range and agreed well with theoretical prediction, as did the system MTF and NPS. The DQE analyzed as a function of kilovolt (peak), exposure, detector threshold, and readout mode revealed important considerations for system optimization. The model also demonstrated the important implications of false counts from both additive electronic noise and charge sharing and highlighted the system design and operational parameters that most affect detector performance in the presence of such factors: for example, increasing the detector threshold from 0 to 100 (arbitrary units of pulse height threshold roughly equivalent to 0.5 and 6 keV energy threshold, respectively), increased the f{sub 50} (spatial

  10. Cascaded systems analysis of photon counting detectors

    PubMed Central

    Xu, J.; Zbijewski, W.; Gang, G.; Stayman, J. W.; Taguchi, K.; Lundqvist, M.; Fredenberg, E.; Carrino, J. A.; Siewerdsen, J. H.

    2014-01-01

    Purpose: Photon counting detectors (PCDs) are an emerging technology with applications in spectral and low-dose radiographic and tomographic imaging. This paper develops an analytical model of PCD imaging performance, including the system gain, modulation transfer function (MTF), noise-power spectrum (NPS), and detective quantum efficiency (DQE). Methods: A cascaded systems analysis model describing the propagation of quanta through the imaging chain was developed. The model was validated in comparison to the physical performance of a silicon-strip PCD implemented on an experimental imaging bench. The signal response, MTF, and NPS were measured and compared to theory as a function of exposure conditions (70 kVp, 1–7 mA), detector threshold, and readout mode (i.e., the option for coincidence detection). The model sheds new light on the dependence of spatial resolution, charge sharing, and additive noise effects on threshold selection and was used to investigate the factors governing PCD performance, including the fundamental advantages and limitations of PCDs in comparison to energy-integrating detectors (EIDs) in the linear regime for which pulse pileup can be ignored. Results: The detector exhibited highly linear mean signal response across the system operating range and agreed well with theoretical prediction, as did the system MTF and NPS. The DQE analyzed as a function of kilovolt (peak), exposure, detector threshold, and readout mode revealed important considerations for system optimization. The model also demonstrated the important implications of false counts from both additive electronic noise and charge sharing and highlighted the system design and operational parameters that most affect detector performance in the presence of such factors: for example, increasing the detector threshold from 0 to 100 (arbitrary units of pulse height threshold roughly equivalent to 0.5 and 6 keV energy threshold, respectively), increased the f50 (spatial-frequency at

  11. Photon Detection Systems for Modern Cherenkov Detectors

    NASA Astrophysics Data System (ADS)

    Seitz, B.; Britting, A.; Cowie, E.; Eyrich, W.; Hoek, M.; Keri, T.; Lehmann, A.; Montgomery, R.; Uhlig, F.

    Modern experiments in hadronic physics require detector systems capable of identifying and reconstructing all final-state particle and their momentum vectors. The ANDA experiment at FAIR and the CLAS 12 experiment and Jefferson Laboratory both plan to use imaging Cherenkov counters for particle identification. CLAS 12 will feature a Ring Imaging CHerenkov counter (RICH), while ANDA plans to construct Cherenkov counters relying on the Detections of Internally Reflected Cherenkov light (DIRC). These detectors require high-rate, single-photon capable light detection systems with sufficient granularity and position resolution. Several candidate systems are available, ranging from multi-anode photomultiplier tubes to micro-channel plate systems to silicon photomultipliers. Each of these detection solutions has particular advantages and disadvantages. Detailed studies of the rate dependence, cross-talk, time-resolution and position resolution fro a range of commercially available photon detection solutions are presented and evaluated on their applicability to the ANDA and CLAS12 Cherenkov counters.

  12. Improved photon counting efficiency calibration using superconducting single photon detectors

    NASA Astrophysics Data System (ADS)

    Gan, Haiyong; Xu, Nan; Li, Jianwei; Sun, Ruoduan; Feng, Guojin; Wang, Yanfei; Ma, Chong; Lin, Yandong; Zhang, Labao; Kang, Lin; Chen, Jian; Wu, Peiheng

    2015-10-01

    The quantum efficiency of photon counters can be measured with standard uncertainty below 1% level using correlated photon pairs generated through spontaneous parametric down-conversion process. Normally a laser in UV, blue or green wavelength range with sufficient photon energy is applied to produce energy and momentum conserved photon pairs in two channels with desired wavelengths for calibration. One channel is used as the heralding trigger, and the other is used for the calibration of the detector under test. A superconducting nanowire single photon detector with advantages such as high photon counting speed (<20 MHz), low dark count rate (<50 counts per second), and wideband responsivity (UV to near infrared) is used as the trigger detector, enabling correlated photons calibration capabilities into shortwave visible range. For a 355nm single longitudinal mode pump laser, when a superconducting nanowire single photon detector is used as the trigger detector at 1064nm and 1560nm in the near infrared range, the photon counting efficiency calibration capabilities can be realized at 532nm and 460nm. The quantum efficiency measurement on photon counters such as photomultiplier tubes and avalanche photodiodes can be then further extended in a wide wavelength range (e.g. 400-1000nm) using a flat spectral photon flux source to meet the calibration demands in cutting edge low light applications such as time resolved fluorescence and nonlinear optical spectroscopy, super resolution microscopy, deep space observation, and so on.

  13. Construction of the CDF silicon vertex detector

    SciTech Connect

    Skarha, J.; Barnett, B.; Boswell, C.; Snider, F.; Spies, A.; Tseng, J.; Vejcik, S. ); Carter, H.; Flaugher, B.; Gonzales, B.; Hrycyk, M.; Nelson, C.; Segler, S.; Shaw, T.; Tkaczyk, S.; Turner, K.; Wesson, T. ); Carithers, W.; Ely, R.; Haber, C.; Holland, S.; Kleinfelder, S.; Merrick, T.; Schneider, O.; Wester

    1992-04-01

    Technical details and methods used in constructing the CDF silicon vertex detector are presented. This description includes a discussion of the foam-carbon fiber composite structure used to silicon microstrip detectors and the procedure for achievement of 5 {mu}m detector alignment. The construction of the beryllium barrel structure, which houses the detector assemblies, is also described. In addition, the 10 {mu}m placement accuracy of the detectors in the barrel structure is discussed and the detector cooling and mounting systems are described. 12 refs.

  14. A complete design flow for silicon photonics

    NASA Astrophysics Data System (ADS)

    Pond, James; Cone, Chris; Chrostowski, Lukas; Klein, Jackson; Flueckiger, Jonas; Liu, Amy; McGuire, Dylan; Wang, Xu

    2014-05-01

    Broad adoption of silicon photonics technology for photonic integrated circuits requires standardized design flows that are similar to what is available for analog and mixed signal electrical circuit design. We have developed a design flow that combines mature electronic design automation (EDA) software with optical simulation software. An essential component of any design flow, whether electrical or photonic, is the ability to accurately simulate largescale circuits. This is particularly important when the behavior of the circuit is not trivially related to the individual component performance. While this is clearly the case for electronic circuits consisting of hundreds to billions of transistors, it is already becoming important in photonic circuits such as WDM transmitters, where signal cross talk needs to be considered, as well as optical cross-connect switches. In addition, optical routing to connect different components requires the introduction of additional waveguide sections, waveguide bends, and waveguide crossings, which affect the overall circuit performance. Manufacturing variability can also have dramatic circuit-level consequences that need to be simulated. Circuit simulations must rely on compact models that can accurately represent the behavior of each component, and the compact model parameters must be extracted from physical level simulation and experimental results. We show how large scale circuits can be simulated in both the time and frequency domains, including the effects of bidirectional and, where appropriate, multimode and multichannel photonic waveguides. We also show how active, passive and nonlinear individual components such as grating couplers, waveguides, splitters, filters, electro-optical modulators and detectors can be simulated using a combination of electrical and optical algorithms, and good agreement with experimental results can be obtained. We then show how parameters, with inclusion of fabrication process variations, can

  15. CARS-based silicon photonics

    NASA Astrophysics Data System (ADS)

    Vermeulen, Nathalie; Debaes, Christof; Thienpont, Hugo

    2009-05-01

    In this invited paper, we will first discuss the recent research progress regarding silicon-on-insulator (SOI) Raman wavelength converters, the working principle of which is based on the four-wave mixing process of coherent anti-Stokes Raman scattering (CARS). Next, we will present our research results on other aspects of CARS in SOI waveguides. First, starting from the basic formalism for CARS we will show that, in contrast to what most scientists believe, CARS exchanges energy with the Raman medium in which it takes place and is even able to extract energy (i.e. extract phonons) from it. Furthermore, we will introduce a novel CARS-based approach to reduce the heat dissipation in Raman lasers due to the quantum defect between pump and lasing photons, and we will numerically demonstrate that with this "CARS-based heat mitigation technique" the quantum-defect heating in SOI waveguide Raman lasers could be reduced with as much as 35%.

  16. Gamma radiation effects on silicon photonic waveguides.

    PubMed

    Grillanda, Stefano; Singh, Vivek; Raghunathan, Vivek; Morichetti, Francesco; Melloni, Andrea; Kimerling, Lionel; Agarwal, Anuradha M

    2016-07-01

    To support the use of integrated photonics in harsh environments, such as outer space, the hardness threshold to high-energy radiation must be established. Here, we investigate the effects of gamma (γ) rays, with energy in the MeV-range, on silicon photonic waveguides. By irradiation of high-quality factor amorphous silicon core resonators, we measure the impact of γ rays on the materials incorporated in our waveguide system, namely amorphous silicon, silicon dioxide, and polymer. While we show the robustness of amorphous silicon and silicon dioxide up to an absorbed dose of 15 Mrad, more than 100× higher than previous reports on crystalline silicon, polymer materials exhibit changes with doses as low as 1 Mrad.

  17. Integrated silicon and silicon nitride photonic circuits on flexible substrates.

    PubMed

    Chen, Yu; Li, Mo

    2014-06-15

    Flexible integrated photonic devices based on crystalline materials on plastic substrates have a promising potential in many unconventional applications. In this Letter, we demonstrate a fully integrated photonic system including ring resonators and grating couplers, based on both crystalline silicon and silicon nitride, on flexible plastic substrate by using the stamping-transfer method. A high yield has been achieved by a simple, yet reliable transfer method without significant performance degradation.

  18. Photon counting detector for the personal radiography inspection system "SIBSCAN"

    NASA Astrophysics Data System (ADS)

    Babichev, E. A.; Baru, S. E.; Grigoriev, D. N.; Leonov, V. V.; Oleynikov, V. P.; Porosev, V. V.; Savinov, G. A.

    2017-02-01

    X-ray detectors operating in the energy integrating mode are successfully used in many different applications. Nevertheless the direct photon counting detectors, having the superior parameters in comparison with the integrating ones, are rarely used yet. One of the reasons for this is the low value of the electrical signal generated by a detected photon. Silicon photomultiplier (SiPM) based scintillation counters have a high detection efficiency, high electronic gain and compact dimensions. This makes them a very attractive candidate to replace routinely used detectors in many fields. More than 10 years ago the digital scanning radiography system based on multistrip ionization chamber (MIC) was suggested at Budker Institute of Nuclear Physics. The detector demonstrates excellent radiation resistance and parameter stability after 5 year operations and an imaging of up to 1000 persons per day. Currently, the installations operate at several Russian airports and at subway stations in some cities. At the present time we design a new detector operating in the photon counting mode, having superior parameters than the gas one, based on scintillator - SiPM assemblies. This detector has close to zero noise, higher quantum efficiency and a count rate capability of more than 5 MHz per channel (20% losses), which leads to better image quality and improved detection capability. The suggested detector technology could be expanded to medical applications.

  19. Silicon photonics at the University of Surrey

    NASA Astrophysics Data System (ADS)

    Reed, G. T.; Mashanovich, G.; Gardes, F. Y.; Gwilliam, R. M.; Wright, N. M.; Thomson, D. J.; Timotijevic, B. D.; Litvinenko, K. L.; Headley, W. R.; Smith, A. J.; Knights, A. P.; Jessop, P. E.; Tarr, N. G.; Deane, J. H. B.

    2009-05-01

    Silicon Photonics is a field that has seen rapid growth and dramatic changes in the past 5 years. According to the MIT Communications Technology Roadmap [1], which aims to establish a common architecture platform across market sectors with a potential $20B in annual revenue, silicon photonics is among the top ten emerging technologies. This has in part been a consequence of the recent involvement of large semiconductor companies around the world, particularly in the USA. Significant investment in the technology has also followed in Japan, Korea, and in the European Union. Low cost is a key driver, so it is imperative to pursue technologies that are mass-producible. Therefore, Silicon Photonics continues to progress at a rapid rate. This paper will describe some of the work of the Silicon Photonics Group at the University of Surrey in the UK. The work is concerned with the sequential development of a series of components for silicon photonic optical circuits, and some of the components are discussed here. In particular the paper will present work on optical waveguides, optical filters, modulators, and lifetime modification of carriers generated by two photon absorption, to improve the performance of Raman amplifiers in silicon.

  20. Energy dispersive photon counting detectors for breast imaging

    NASA Astrophysics Data System (ADS)

    Barber, William C.; Wessel, Jan C.; Malakhov, Nail; Wawrzyniak, Gregor; Hartsough, Neal E.; Gandhi, Thulasidharan; Nygard, Einar; Iwanczyk, Jan S.

    2013-09-01

    We report on our efforts toward the development of silicon (Si) strip detectors for energy-resolved clinical breast imaging. Typically, x-ray integrating detectors based on scintillating cesium iodide CsI(Tl) or amorphous selenium (a- Se) are used in most commercial systems. Recently, mammography instrumentation has been introduced based on photon counting silicon Si strip detectors. Mammography requires high flux from the x-ray generator, therefore, in order to achieve energy resolved single photon counting, a high output count rate (OCR) for the detector must be achieved at the required spatial resolution and across the required dynamic range for the application. The required performance in terms of the OCR, spatial resolution, and dynamic range must be obtained with sufficient field of view (FOV) for the application thus requiring the tiling of pixel arrays and scanning techniques. Room temperature semiconductors, operating as direct conversion x-ray sensors, can provide the required speed when connected to application specific integrated circuits (ASICs) operating at fast peaking times with multiple fixed thresholds per pixel, provided that the sensors are designed for rapid signal formation across the x-ray energy ranges of the application at the required energy and spatial resolutions. We present our methods and results from the optimization of prototype detectors based on Si strip structures. We describe the detector optimization and the development of ASIC readout electronics that provide the required spatial resolution, low noise, high count rate capabilities and minimal power consumption.

  1. Ultrafast photon drag detector for intersubband spectroscopy

    NASA Astrophysics Data System (ADS)

    Sigg, Hans; Graf, Stephan; Kwakernaak, Martin H.; Margotte, Bernd; Erni, Daniel; Van Son, Peter; Köhler, Klaus

    1996-03-01

    The photon drag effect of a 2D electron gas is measured using the ps infrared pulses of the wavelength-tunable free electron laser source FELIX. The pulsed photon drag response is found to depend critically on the coupling characteristics of the electrical circuit. We therefore developed an impedance and velocity matched photon drag detector. It consists of a GaAs/AlGaAs multi quantum well sample which forms an integral part of a microstrip line. A Ge-prism enables incoupling at the critical total reflection angle. This novel transmission line integrated photon drag detector (TIP-detector) generates signal transients below 10 ps rise and fall times. Its continuous spectral response through the intersubband resonance is investigated at room temperature and at T=100 K. An analysis of the spectral lineshape of the photon drag current response yields information about the momentum relaxation times of the electrons in the ground and excited subbands.

  2. P-type silicon drift detectors

    SciTech Connect

    Walton, J.T.; Krieger, B.; Krofcheck, D.; O`Donnell, R.; Odyniec, G.; Partlan, M.D.; Wang, N.W.

    1995-06-01

    Preliminary results on 16 CM{sup 2}, position-sensitive silicon drift detectors, fabricated for the first time on p-type silicon substrates, are presented. The detectors were designed, fabricated, and tested recently at LBL and show interesting properties which make them attractive for use in future physics experiments. A pulse count rate of approximately 8 {times} l0{sup 6} s{sup {minus}1} is demonstrated by the p-type silicon drift detectors. This count rate estimate is derived by measuring simultaneous tracks produced by a laser and photolithographic mask collimator that generates double tracks separated by 50 {mu}m to 1200 {mu}m. A new method of using ion-implanted polysilicon to produce precise valued bias resistors on the silicon drift detectors is also discussed.

  3. Amorphous Silicon Based Neutron Detector

    SciTech Connect

    Xu, Liwei

    2004-12-12

    Various large-scale neutron sources already build or to be constructed, are important for materials research and life science research. For all these neutron sources, neutron detectors are very important aspect. However, there is a lack of a high-performance and low-cost neutron beam monitor that provides time and temporal resolution. The objective of this SBIR Phase I research, collaboratively performed by Midwest Optoelectronics, LLC (MWOE), the University of Toledo (UT) and Oak Ridge National Laboratory (ORNL), is to demonstrate the feasibility for amorphous silicon based neutron beam monitors that are pixilated, reliable, durable, fully packaged, and fabricated with high yield using low-cost method. During the Phase I effort, work as been focused in the following areas: 1) Deposition of high quality, low-defect-density, low-stress a-Si films using very high frequency plasma enhanced chemical vapor deposition (VHF PECVD) at high deposition rate and with low device shunting; 2) Fabrication of Si/SiO2/metal/p/i/n/metal/n/i/p/metal/SiO2/ device for the detection of alpha particles which are daughter particles of neutrons through appropriate nuclear reactions; and 3) Testing of various devices fabricated for alpha and neutron detection; As the main results: · High quality, low-defect-density, low-stress a-Si films have been successfully deposited using VHF PECVD on various low-cost substrates; · Various single-junction and double junction detector devices have been fabricated; · The detector devices fabricated have been systematically tested and analyzed. · Some of the fabricated devices are found to successfully detect alpha particles. Further research is required to bring this Phase I work beyond the feasibility demonstration toward the final prototype devices. The success of this project will lead to a high-performance, low-cost, X-Y pixilated neutron beam monitor that could be used in all of the neutron facilities worldwide. In addition, the technologies

  4. Gaseous detectors of ultraviolet and visible photons

    SciTech Connect

    Peskov, V.; Borovik-Romanov, A.; Volynshikova, T.

    1994-06-01

    We describe simple methods of manufacturing in a laboratory gaseous detectors of visible photons with GaAs(Cs) and SbCs photocathodes and Ti getters. Covered by CsI protective layers they are robust enough to be stable under ordinary experimental conditions. First attempts to use these detectors for crystal scintillator and fiber readout are presented.

  5. Compton imager using room temperature silicon detectors

    NASA Astrophysics Data System (ADS)

    Kurfess, James D.; Novikova, Elena I.; Phlips, Bernard F.; Wulf, Eric A.

    2007-08-01

    We have been developing a multi-layer Compton Gamma Ray Imager using position-sensitive, intrinsic silicon detectors. Advantages of this approach include room temperature operation, reduced Doppler broadening, and use of conventional silicon fabrication technologies. We have obtained results on the imaging performance of a multi-layer instrument where each layer consists of a 2×2 array of double-sided strip detectors. Each detector is 63 mm×63 mm×2 mm thick and has 64 strips providing a strip pitch of approximately 0.9 mm. The detectors were fabricated by SINTEF ICT (Oslo Norway) from 100 mm diameter wafers. The use of large arrays of silicon detectors appears especially advantageous for applications that require excellent sensitivity, spectral resolution and imaging such as gamma ray astrophysics, detection of special nuclear materials, and medical imaging. The multiple Compton interactions (three or more) in the low-Z silicon enable the energy and direction of the incident gamma ray to be determined without full deposition of the incident gamma-ray energy in the detector. The performance of large volume instruments for various applications are presented, including an instrument under consideration for NASA's Advanced Compton Telescope (ACT) mission and applications to Homeland Security. Technology developments that could further extend the sensitivity and performance of silicon Compton Imagers are presented, including the use of low-energy (few hundred keV) electron tracking within novel silicon detectors and the potential for a wafer-bonding approach to produce thicker, position-sensitive silicon detectors with an associated reduction of required electronics and instrument cost.

  6. Silicon photodiode soft x-ray detectors for pulsed power experiments

    SciTech Connect

    Idzorek, G.C.; Bartlett, R.J.

    1997-10-01

    Silicon photodiodes offer a number of advantages over conventional photocathode type soft x-ray detectors in pulsed power experiments. These include a nominally flat response, insensitivity to surface contamination, low voltage biasing requirements, sensitivity to low energy photons, excellent detector to detector response reproducibility, and ability to operate in poor vacuum or gas backfilled experiments. Silicon photodiodes available from International Radiation Detectors (IRD), Torrance, California have been characterized for absolute photon response from 1 eV to 10 keV photon energy, time response, and signal saturation levels. The authors calibration measurements show factor of ten deviations from the silicon photodiode theoretical flat response due to diode sensitivity outside the center `sensitive area`. Detector response reproducibility between diodes appears to be better than 5%. Time response measurements show a 10-90% rise time of about 0.1 nanoseconds and a fall time of about 0.5 nanoseconds.

  7. p-type silicon detector for brachytherapy dosimetry.

    PubMed

    Piermattei, A; Azario, L; Monaco, G; Soriani, A; Arcovito, G

    1995-06-01

    The sensitivity of a cylindrical p-type silicon detector was studied by means of air and water measurements using different photon beams. A lead filter cap around the diode was used to minimize the dependence of the detector response as a function of the brachytherapy photon energy. The radial dose distribution of a high-activity 192Ir source in a brachytherapy phantom was measured by means of the shielded diode and the agreement of these data with theoretical evaluations confirms the method used to compensate diode response in the intermediate energy range. The diode sensitivity was constant over a wide range of dose rates of clinical interest; this allowed one to have a small detector calibrated in terms of absorbed dose in a medium. Theoretical evaluations showed that a single shielding filter around the p-type diode is sufficient to obtain accurate dosimetry for 192Ir, 137Cs, and 60Co brachytherapy sources.

  8. Silicon mirror suspensions for gravitational wave detectors

    NASA Astrophysics Data System (ADS)

    Cumming, A. V.; Cunningham, L.; Hammond, G. D.; Haughian, K.; Hough, J.; Kroker, S.; Martin, I. W.; Nawrodt, R.; Rowan, S.; Schwarz, C.; van Veggel, A. A.

    2014-01-01

    One of the most significant limits to the sensitivity of current, and future, long-baseline interferometric gravitational wave detectors is thermal displacement noise of the test masses and their suspensions. This paper reports results of analytical and experimental studies of the limits to thermal noise performance of cryogenic silicon test mass suspensions set by two constraints on suspension fibre dimensions: the minimum dimensions required to allow conductive cooling for extracting incident laser beam heat deposited in the mirrors; and the minimum dimensions of fibres (set by their tensile strength) which can support test masses of the size envisaged for use in future detectors. We report experimental studies of breaking strength of silicon ribbons, and resulting design implications for the feasibility of suspension designs for future gravitational wave detectors using silicon suspension fibres. We analyse the implication of this study for thermal noise performance of cryogenically cooled silicon suspensions.

  9. The Silicon Pixel Detector for ALICE Experiment

    SciTech Connect

    Fabris, D.; Bombonati, C.; Dima, R.; Lunardon, M.; Moretto, S.; Pepato, A.; Bohus, L. Sajo; Scarlassara, F.; Segato, G.; Shen, D.; Turrisi, R.; Viesti, G.; Anelli, G.; Boccardi, A.; Burns, M.; Campbell, M.; Ceresa, S.; Conrad, J.; Kluge, A.; Kral, M.

    2007-10-26

    The Inner Tracking System (ITS) of the ALICE experiment is made of position sensitive detectors which have to operate in a region where the track density may be as high as 50 tracks/cm{sup 2}. To handle such densities detectors with high precision and granularity are mandatory. The Silicon Pixel Detector (SPD), the innermost part of the ITS, has been designed to provide tracking information close to primary interaction point. The assembly of the entire SPD has been completed.

  10. Monolithic pixel detectors in silicon on insulator technology

    NASA Astrophysics Data System (ADS)

    Bisello, Dario

    2013-05-01

    Silicon On Insulator (SOI) is becoming an attractive technology to fabricate monolithic pixel detectors. The possibility of using the depleted resistive substrate as a drift collection volume and to connect it by means of vias through the buried oxide to the pixel electronic makes this kind of approach interesting both for particle and photon detection. In this paper I report the results obtained in the development of monolithic pixel detectors in an SOI technology by a collaboration between groups from the University and INFN of Padova (Italy) and the LBNL and the SCIPP at UCSC (USA).

  11. Large-scale quantum photonic circuits in silicon

    NASA Astrophysics Data System (ADS)

    Harris, Nicholas C.; Bunandar, Darius; Pant, Mihir; Steinbrecher, Greg R.; Mower, Jacob; Prabhu, Mihika; Baehr-Jones, Tom; Hochberg, Michael; Englund, Dirk

    2016-08-01

    Quantum information science offers inherently more powerful methods for communication, computation, and precision measurement that take advantage of quantum superposition and entanglement. In recent years, theoretical and experimental advances in quantum computing and simulation with photons have spurred great interest in developing large photonic entangled states that challenge today's classical computers. As experiments have increased in complexity, there has been an increasing need to transition bulk optics experiments to integrated photonics platforms to control more spatial modes with higher fidelity and phase stability. The silicon-on-insulator (SOI) nanophotonics platform offers new possibilities for quantum optics, including the integration of bright, nonclassical light sources, based on the large third-order nonlinearity (χ(3)) of silicon, alongside quantum state manipulation circuits with thousands of optical elements, all on a single phase-stable chip. How large do these photonic systems need to be? Recent theoretical work on Boson Sampling suggests that even the problem of sampling from e30 identical photons, having passed through an interferometer of hundreds of modes, becomes challenging for classical computers. While experiments of this size are still challenging, the SOI platform has the required component density to enable low-loss and programmable interferometers for manipulating hundreds of spatial modes. Here, we discuss the SOI nanophotonics platform for quantum photonic circuits with hundreds-to-thousands of optical elements and the associated challenges. We compare SOI to competing technologies in terms of requirements for quantum optical systems. We review recent results on large-scale quantum state evolution circuits and strategies for realizing high-fidelity heralded gates with imperfect, practical systems. Next, we review recent results on silicon photonics-based photon-pair sources and device architectures, and we discuss a path towards

  12. Photonic crystal sensors based on porous silicon.

    PubMed

    Pacholski, Claudia

    2013-04-09

    Porous silicon has been established as an excellent sensing platform for the optical detection of hazardous chemicals and biomolecular interactions such as DNA hybridization, antigen/antibody binding, and enzymatic reactions. Its porous nature provides a high surface area within a small volume, which can be easily controlled by changing the pore sizes. As the porosity and consequently the refractive index of an etched porous silicon layer depends on the electrochemial etching conditions photonic crystals composed of multilayered porous silicon films with well-resolved and narrow optical reflectivity features can easily be obtained. The prominent optical response of the photonic crystal decreases the detection limit and therefore increases the sensitivity of porous silicon sensors in comparison to sensors utilizing Fabry-Pérot based optical transduction. Development of porous silicon photonic crystal sensors which allow for the detection of analytes by the naked eye using a simple color change or the fabrication of stacked porous silicon photonic crystals showing two distinct optical features which can be utilized for the discrimination of analytes emphasize its high application potential.

  13. Novel Photon-Counting Detectors for Free-Space Communication

    NASA Technical Reports Server (NTRS)

    Krainak, M. A.; Yang, G.; Sun, X.; Lu, W.; Merritt, S.; Beck, J.

    2016-01-01

    We present performance data for novel photon-counting detectors for free space optical communication. NASA GSFC is testing the performance of two types of novel photon-counting detectors 1) a 2x8 mercury cadmium telluride (HgCdTe) avalanche array made by DRS Inc., and a 2) a commercial 2880-element silicon avalanche photodiode (APD) array. We present and compare dark count, photon-detection efficiency, wavelength response and communication performance data for these detectors. We successfully measured real-time communication performance using both the 2 detected-photon threshold and AND-gate coincidence methods. Use of these methods allows mitigation of dark count, after-pulsing and background noise effects. The HgCdTe APD array routinely demonstrated photon detection efficiencies of greater than 50% across 5 arrays, with one array reaching a maximum PDE of 70%. We performed high-resolution pixel-surface spot scans and measured the junction diameters of its diodes. We found that decreasing the junction diameter from 31 micrometers to 25 micrometers doubled the e- APD gain from 470 for an array produced in the year 2010 to a gain of 1100 on an array delivered to NASA GSFC recently. The mean single-photon SNR was over 12 and the excess noise factors measurements were 1.2-1.3. The commercial silicon APD array exhibited a fast output with rise times of 300 ps and pulse widths of 600 ps. On-chip individually filtered signals from the entire array were multiplexed onto a single fast output.

  14. Silicon photonics cloud (SiCloud)

    NASA Astrophysics Data System (ADS)

    DeVore, Peter T. S.; Jiang, Yunshan; Lynch, Michael; Miyatake, Taira; Carmona, Christopher; Chan, Andrew C.; Muniam, Kuhan; Jalali, Bahram

    2015-02-01

    We present SiCloud (Silicon Photonics Cloud), the first free, instructional web-based research and education tool for silicon photonics. SiCloud's vision is to provide a host of instructional and research web-based tools. Such interactive learning tools enhance traditional teaching methods by extending access to a very large audience, resulting in very high impact. Interactive tools engage the brain in a way different from merely reading, and so enhance and reinforce the learning experience. Understanding silicon photonics is challenging as the topic involves a wide range of disciplines, including material science, semiconductor physics, electronics and waveguide optics. This web-based calculator is an interactive analysis tool for optical properties of silicon and related material (SiO2, Si3N4, Al2O3, etc.). It is designed to be a one stop resource for students, researchers and design engineers. The first and most basic aspect of Silicon Photonics is the Material Parameters, which provides the foundation for the Device, Sub-System and System levels. SiCloud includes the common dielectrics and semiconductors for waveguide core, cladding, and photodetection, as well as metals for electrical contacts. SiCloud is a work in progress and its capability is being expanded. SiCloud is being developed at UCLA with funding from the National Science Foundation's Center for Integrated Access Networks (CIAN) Engineering Research Center.

  15. High-speed and high-efficiency travelling wave single-photon detectors embedded in nanophotonic circuits

    PubMed Central

    Pernice, W.H.P.; Schuck, C.; Minaeva, O.; Li, M.; Goltsman, G.N.; Sergienko, A.V.; Tang, H.X.

    2012-01-01

    Ultrafast, high-efficiency single-photon detectors are among the most sought-after elements in modern quantum optics and quantum communication. However, imperfect modal matching and finite photon absorption rates have usually limited their maximum attainable detection efficiency. Here we demonstrate superconducting nanowire detectors atop nanophotonic waveguides, which enable a drastic increase of the absorption length for incoming photons. This allows us to achieve high on-chip single-photon detection efficiency up to 91% at telecom wavelengths, repeatable across several fabricated chips. We also observe remarkably low dark count rates without significant compromise of the on-chip detection efficiency. The detectors are fully embedded in scalable silicon photonic circuits and provide ultrashort timing jitter of 18 ps. Exploiting this high temporal resolution, we demonstrate ballistic photon transport in silicon ring resonators. Our direct implementation of a high-performance single-photon detector on chip overcomes a major barrier in integrated quantum photonics. PMID:23271658

  16. Intravitreal properties of porous silicon photonic crystals

    PubMed Central

    Cheng, L; Anglin, E; Cunin, F; Kim, D; Sailor, M J; Falkenstein, I; Tammewar, A; Freeman, W R

    2009-01-01

    Aim To determine the suitability of porous silicon photonic crystals for intraocular drug-delivery. Methods A rugate structure was electrochemically etched into a highly doped p-type silicon substrate to create a porous silicon film that was subsequently removed and ultrasonically fractured into particles. To stabilise the particles in aqueous media, the silicon particles were modified by surface alkylation (using thermal hydrosilylation) or by thermal oxidation. Unmodified particles, hydrosilylated particles and oxidised particles were injected into rabbit vitreous. The stability and toxicity of each type of particle were studied by indirect ophthalmoscopy, biomicroscopy, tonometry, electroretinography (ERG) and histology. Results No toxicity was observed with any type of the particles during a period of >4 months. Surface alkylation led to dramatically increased intravitreal stability and slow degradation. The estimated vitreous half-life increased from 1 week (fresh particles) to 5 weeks (oxidised particles) and to 16 weeks (hydrosilylated particles). Conclusion The porous silicon photonic crystals showed good biocompatibility and may be used as an intraocular drug-delivery system. The intravitreal injectable porous silicon photonic crystals may be engineered to host a variety of therapeutics and achieve controlled drug release over long periods of time to treat chronic vitreoretinal diseases. PMID:18441177

  17. EDITORIAL: Special issue on silicon photonics

    NASA Astrophysics Data System (ADS)

    Reed, Graham; Paniccia, Mario; Wada, Kazumi; Mashanovich, Goran

    2008-06-01

    The technology now known as silicon photonics can be traced back to the pioneering work of Soref in the mid-1980s (see, for example, Soref R A and Lorenzo J P 1985 Electron. Lett. 21 953). However, the nature of the research conducted today, whilst it builds upon that early work, is unrecognizable in terms of technology metrics such as device efficiency, device data rate and device dimensions, and even in targeted applications areas. Today silicon photonics is still evolving, and is enjoying a period of unprecedented attention in terms of research focus. This has resulted in orders-of-magnitude improvement in device performance over the last few years to levels many thought were impossible. However, despite the existence of the research field for more than two decades, silicon is still regarded as a 'new' optical material, one that is being manipulated and modified to satisfy the requirements of a range of applications. This is somewhat ironic since silicon is one of the best known and most thoroughly studied materials, thanks to the electronics industry that has made silicon its material of choice. The principal reasons for the lack of study of this 'late developer' are that (i) silicon is an indirect bandgap material and (ii) it does not exhibit a linear electro-optic (Pockels) effect. The former condition means that it is difficult to make a laser in silicon based on the intrinsic performance of the material, and consequently, in recent years, researchers have attempted to modify the material to artificially engineer the conditions for lasing to be viable (see, for example, the review text, Jalali B et al 2008 Silicon Lasers in Silicon Photonics: The State of the Art ed G T Reed (New York: Wiley)). The latter condition means that optical modulators are intrinsically less efficient in silicon than in some other materials, particularly when targeting the popular telecommunications wavelengths around 1.55 μm. Therefore researchers have sought alternative

  18. Modeling silicon diode energy response factors for use in therapeutic photon beams.

    PubMed

    Eklund, Karin; Ahnesjö, Anders

    2009-10-21

    Silicon diodes have good spatial resolution, which makes them advantageous over ionization chambers for dosimetry in fields with high dose gradients. However, silicon diodes overrespond to low-energy photons, that are more abundant in scatter which increase with large fields and larger depths. We present a cavity-theory-based model for a general response function for silicon detectors at arbitrary positions within photon fields. The model uses photon and electron spectra calculated from fluence pencil kernels. The incident photons are treated according to their energy through a bipartition of the primary beam photon spectrum into low- and high-energy components. Primary electrons from the high-energy component are treated according to Spencer-Attix cavity theory. Low-energy primary photons together with all scattered photons are treated according to large cavity theory supplemented with an energy-dependent factor K(E) to compensate for energy variations in the electron equilibrium. The depth variation of the response for an unshielded silicon detector has been calculated for 5 x 5 cm(2), 10 x 10 cm(2) and 20 x 20 cm(2) fields in 6 and 15 MV beams and compared with measurements showing that our model calculates response factors with deviations less than 0.6%. An alternative method is also proposed, where we show that one can use a correlation with the scatter factor to determine the detector response of silicon diodes with an error of less than 3% in 6 MV and 15 MV photon beams.

  19. Gated Silicon Drift Detector Fabricated from a Low-Cost Silicon Wafer

    PubMed Central

    Matsuura, Hideharu; Sakurai, Shungo; Oda, Yuya; Fukushima, Shinya; Ishikawa, Shohei; Takeshita, Akinobu; Hidaka, Atsuki

    2015-01-01

    Inexpensive high-resolution silicon (Si) X-ray detectors are required for on-site surveys of traces of hazardous elements in food and soil by measuring the energies and counts of X-ray fluorescence photons radially emitted from these elements. Gated silicon drift detectors (GSDDs) are much cheaper to fabricate than commercial silicon drift detectors (SDDs). However, previous GSDDs were fabricated from 10-kΩ·cm Si wafers, which are more expensive than 2-kΩ·cm Si wafers used in commercial SDDs. To fabricate cheaper portable X-ray fluorescence instruments, we investigate GSDDs formed from 2-kΩ·cm Si wafers. The thicknesses of commercial SDDs are up to 0.5 mm, which can detect photons with energies up to 27 keV, whereas we describe GSDDs that can detect photons with energies of up to 35 keV. We simulate the electric potential distributions in GSDDs with Si thicknesses of 0.5 and 1 mm at a single high reverse bias. GSDDs with one gate pattern using any resistivity Si wafer can work well for changing the reverse bias that is inversely proportional to the resistivity of the Si wafer. PMID:26007742

  20. Silicon Absolute X-Ray Detectors

    SciTech Connect

    Seely, John F.; Korde, Raj; Sprunck, Jacob; Medjoubi, Kadda; Hustache, Stephanie

    2010-06-23

    The responsivity of silicon photodiodes having no loss in the entrance window, measured using synchrotron radiation in the 1.75 to 60 keV range, was compared to the responsivity calculated using the silicon thickness measured using near-infrared light. The measured and calculated responsivities agree with an average difference of 1.3%. This enables their use as absolute x-ray detectors.

  1. High speed analog-to-digital conversion with silicon photonics

    NASA Astrophysics Data System (ADS)

    Holzwarth, C. W.; Amatya, R.; Araghchini, M.; Birge, J.; Byun, H.; Chen, J.; Dahlem, M.; DiLello, N. A.; Gan, F.; Hoyt, J. L.; Ippen, E. P.; Kärtner, F. X.; Khilo, A.; Kim, J.; Kim, M.; Motamedi, A.; Orcutt, J. S.; Park, M.; Perrott, M.; Popovic, M. A.; Ram, R. J.; Smith, H. I.; Zhou, G. R.; Spector, S. J.; Lyszczarz, T. M.; Geis, M. W.; Lennon, D. M.; Yoon, J. U.; Grein, M. E.; Schulein, R. T.; Frolov, S.; Hanjani, A.; Shmulovich, J.

    2009-02-01

    Sampling rates of high-performance electronic analog-to-digital converters (ADC) are fundamentally limited by the timing jitter of the electronic clock. This limit is overcome in photonic ADC's by taking advantage of the ultra-low timing jitter of femtosecond lasers. We have developed designs and strategies for a photonic ADC that is capable of 40 GSa/s at a resolution of 8 bits. This system requires a femtosecond laser with a repetition rate of 2 GHz and timing jitter less than 20 fs. In addition to a femtosecond laser this system calls for the integration of a number of photonic components including: a broadband modulator, optical filter banks, and photodetectors. Using silicon-on-insulator (SOI) as the platform we have fabricated these individual components. The silicon optical modulator is based on a Mach-Zehnder interferometer architecture and achieves a VπL of 2 Vcm. The filter banks comprise 40 second-order microring-resonator filters with a channel spacing of 80 GHz. For the photodetectors we are exploring ion-bombarded silicon waveguide detectors and germanium films epitaxially grown on silicon utilizing a process that minimizes the defect density.

  2. Dual concentric crystal low energy photon detector

    DOEpatents

    Guilmette, R.A.

    A photon detector for biological samples includes a block of NaI(T1) having a hole containing a thin walled cylinder of CsI(T1). At least three photo multiplier tubes are evenly spaced around the parameter of the block. Biological samples are placed within the hole, and emissions which are sensed by at least two of the photo multipliers from only the NaI(T1) detector are counted.

  3. Proton straggling in thick silicon detectors

    NASA Astrophysics Data System (ADS)

    Selesnick, R. S.; Baker, D. N.; Kanekal, S. G.

    2017-03-01

    Straggling functions for protons in thick silicon radiation detectors are computed by Monte Carlo simulation. Mean energy loss is constrained by the silicon stopping power, providing higher straggling at low energy and probabilities for stopping within the detector volume. By matching the first four moments of simulated energy-loss distributions, straggling functions are approximated by a log-normal distribution that is accurate for Vavilov κ ≳ 0.3 . They are verified by comparison to experimental proton data from a charged particle telescope.

  4. Configurable silicon photonic crystal waveguides

    NASA Astrophysics Data System (ADS)

    Prorok, Stefan; Petrov, Alexander; Eich, Manfred; Luo, Jingdong; Jen, Alex K.-Y.

    2013-12-01

    In this Letter, we demonstrate that the mode cut off of a photonic crystal waveguide can be trimmed with high accuracy by electron beam bleaching of a chromophore doped polymer cladding. Using this method, configurable waveguides are realized, which allow for spatially resolved changes of the photonic crystal's effective lattice constant as small as 7.6 pm. We show three different examples how to take advantage of configurable photonic crystal waveguides: Shifting of the complete transmission spectrum, definition of cavities with high quality factor, and tuning of existing cavities.

  5. Configurable silicon photonic crystal waveguides

    SciTech Connect

    Prorok, Stefan; Petrov, Alexander; Eich, Manfred; Luo, Jingdong; Jen, Alex K.-Y.

    2013-12-23

    In this Letter, we demonstrate that the mode cut off of a photonic crystal waveguide can be trimmed with high accuracy by electron beam bleaching of a chromophore doped polymer cladding. Using this method, configurable waveguides are realized, which allow for spatially resolved changes of the photonic crystal's effective lattice constant as small as 7.6 pm. We show three different examples how to take advantage of configurable photonic crystal waveguides: Shifting of the complete transmission spectrum, definition of cavities with high quality factor, and tuning of existing cavities.

  6. Performance Characteristics of Thick Silicon Double-sided Strip Detectors.

    PubMed

    Shokouhi, Sepideh; McDonald, Benjamin S; Durko, Heather L; Fritz, Mark A; Furenlid, Lars R; Peterson, Todd E

    2007-01-01

    This work presents characterization studies of thick silicon double-sided strip detectors for a high-resolution small-animal SPECT. The dimension of these detectors is 60 mm × 60 mm × 1 mm. There are 1024 strips on each side that give the coordinates of the photon interaction, with each strip processed by a separate ASIC channel. Our measurement shows that intrinsic spatial resolution equivalent to the 59 µm strip pitch is attainable. Good flood uniformity can be achieved by proper setting of a 4-bit DAC in each ASIC channel to remove trigger threshold variations. This is particularly important for triggering at low energies. The thick silicon DSSD shows high potential for small-animal SPECT imaging.

  7. Performance Characteristics of Thick Silicon Double-sided Strip Detectors

    PubMed Central

    Shokouhi, Sepideh; McDonald, Benjamin S.; Durko, Heather L.; Fritz, Mark A.; Furenlid, Lars R.; Peterson, Todd E.

    2015-01-01

    This work presents characterization studies of thick silicon double-sided strip detectors for a high-resolution small-animal SPECT. The dimension of these detectors is 60 mm × 60 mm × 1 mm. There are 1024 strips on each side that give the coordinates of the photon interaction, with each strip processed by a separate ASIC channel. Our measurement shows that intrinsic spatial resolution equivalent to the 59 µm strip pitch is attainable. Good flood uniformity can be achieved by proper setting of a 4-bit DAC in each ASIC channel to remove trigger threshold variations. This is particularly important for triggering at low energies. The thick silicon DSSD shows high potential for small-animal SPECT imaging. PMID:26778911

  8. Status of the CDF silicon detector

    SciTech Connect

    Grinstein, Sebastian; /Harvard U.

    2006-05-01

    The CDF Run II silicon micro-strip detector is an essential part of the heavy flavor tagging and forward tracking capabilities of the experiment. Since the commissioning period ended in 2002, about 85% of the 730 k readout channels have been consistently provided good data. A summary of the recent improvements in the DAQ system as well as experience of maintaining and operating such a large, complex detector are presented.

  9. PHENIX Silicon Stripixel Detector at RHIC

    NASA Astrophysics Data System (ADS)

    Taneja, Swadhin

    2010-11-01

    A novel design for a silicon sensor consisting of ``spirals'' of silicon strip-pixel was developed at the Brookhaven National Laboratory. This strip-pixel silicon sensor is a single-sided, DC-coupled, two-dimensional detector. A silicon vertex tracker (VTX) is now under construction and will be installed at PHENIX in fall 2010. The strip-pixel ladders will form the two outer barrels of the VTX. The VTX will substantially enhance the physics capabilities of the PHENIX central arm spectrometer and will enable precision measurements of heavy-quark production (charm and beauty) in A + A, p(d) + A, and polarized p + p collisions. In this talk I will focus on the silicon modules and the ladder assembly. I will show the performance results of the ladders.

  10. Detector materials: germanium and silicon

    SciTech Connect

    Haller, E.E.

    1981-11-01

    This article is a summary of a short course lecture given in conjunction with the 1981 Nuclear Science Symposium. The basic physical properties of elemental semiconductors are reviewed. The interaction of energetic radiation with matter is discussed in order to develop a feeling for the appropriate semiconductor detector dimensions. The extremely low net dopant concentrations which are required are derived directly from the detector dimensions. A survey of the more recent techniques which have been developed for the analysis of detector grade semiconductor single crystals is presented.

  11. Infrared Superconducting Single-Photon Detectors

    DTIC Science & Technology

    2012-10-05

    group realized small microstrip devices, the next iteration of which may narrow the line width to below 100 nm, entering the single-photon detection...and will explore superconducting detectors with integrated waveguide circuits and novel deposition techniques. 15. SUBJECT...world record quantum cryptography demonstrations [9] and operation of quantum waveguide circuits at telecom wavelengths [10]. Beyond the quantum

  12. Microtextured Silicon Surfaces for Detectors, Sensors & Photovoltaics

    SciTech Connect

    Carey, JE; Mazur, E

    2005-05-19

    With support from this award we studied a novel silicon microtexturing process and its application in silicon-based infrared photodetectors. By irradiating the surface of a silicon wafer with intense femtosecond laser pulses in the presence of certain gases or liquids, the originally shiny, flat surface is transformed into a dark array of microstructures. The resulting microtextured surface has near-unity absorption from near-ultraviolet to infrared wavelengths well below the band gap. The high, broad absorption of microtextured silicon could enable the production of silicon-based photodiodes for use as inexpensive, room-temperature multi-spectral photodetectors. Such detectors would find use in numerous applications including environmental sensors, solar energy, and infrared imaging. The goals of this study were to learn about microtextured surfaces and then develop and test prototype silicon detectors for the visible and infrared. We were extremely successful in achieving our goals. During the first two years of this award, we learned a great deal about how microtextured surfaces form and what leads to their remarkable optical properties. We used this knowledge to build prototype detectors with high sensitivity in both the visible and in the near-infrared. We obtained room-temperature responsivities as high as 100 A/W at 1064 nm, two orders of magnitude higher than standard silicon photodiodes. For wavelengths below the band gap, we obtained responsivities as high as 50 mA/W at 1330 nm and 35 mA/W at 1550 nm, close to the responsivity of InGaAs photodiodes and five orders of magnitude higher than silicon devices in this wavelength region.

  13. Picosecond response of a photon drag detector

    SciTech Connect

    Kimmitt, M.F.

    1995-12-31

    The primary use of photon drag detectors has been with CO{sub 2} lasers at 10{mu}m. Cornmercially-available devices are limited to response times of < 0.5-1ns and voltage responsivities of <0.5{mu}V W{sup -1}. This poster paper will describe the first photon drag detector specifically designed for very fast response. Using the free-election laser FELIX at the FOM Institute in the Netherlands, a rise time of <50ps has been demonstrated, using a 5mm{sup 2} area detector with a responsivity of >1{mu}V W{sup -1} over the wavelength range 10-25{mu}m. The figure shows the clear resolution of the micropulse structure of the laser. The actual width of each pulse is a few picosecoods, with a micropulse spacing of Ins. The advantages or photon drag detectors are room-temperature operation, linear response to intensifies greater than 10{sup 6}MW cm{sup -2} and very high damage threshold. These detectors are cheap to manufacture and, using different semiconductors, can be designed for any wavelength from 1 {mu}m-5mm.

  14. Junction-side illuminated silicon detector arrays

    DOEpatents

    Iwanczyk, Jan S.; Patt, Bradley E.; Tull, Carolyn

    2004-03-30

    A junction-side illuminated detector array of pixelated detectors is constructed on a silicon wafer. A junction contact on the front-side may cover the whole detector array, and may be used as an entrance window for light, x-ray, gamma ray and/or other particles. The back-side has an array of individual ohmic contact pixels. Each of the ohmic contact pixels on the back-side may be surrounded by a grid or a ring of junction separation implants. Effective pixel size may be changed by separately biasing different sections of the grid. A scintillator may be coupled directly to the entrance window while readout electronics may be coupled directly to the ohmic contact pixels. The detector array may be used as a radiation hardened detector for high-energy physics research or as avalanche imaging arrays.

  15. Silicon Detector Letter of Intent

    SciTech Connect

    Aihara, H.; Burrows, P.; Oreglia, M.

    2010-05-26

    This document presents the current status of SiD's effort to develop an optimized design for an experiment at the International Linear Collider. It presents detailed discussions of each of SiD's various subsystems, an overview of the full GEANT4 description of SiD, the status of newly developed tracking and calorimeter reconstruction algorithms, studies of subsystem performance based on these tools, results of physics benchmarking analyses, an estimate of the cost of the detector, and an assessment of the detector R&D needed to provide the technical basis for an optimised SiD.

  16. Silicon buried channels for pixel detector cooling

    NASA Astrophysics Data System (ADS)

    Boscardin, M.; Conci, P.; Crivellari, M.; Ronchin, S.; Bettarini, S.; Bosi, F.

    2013-08-01

    The support and cooling structures add important contributions to the thickness, in radiation length, of vertex detectors. In order to minimize the material budget of pixel sensors, we developed a new approach to integrate the cooling into the silicon devices. The microchannels are formed in silicon using isotropic SF6 plasma etching in a DRIE (deep reactive ion etcher) equipment. Due to their peculiar profiles, the channels can be sealed by a layer of a PECVD silicon oxide. We have realized on a silicon wafer microchannels with different geometries and hydraulic diameters. We describe the main fabrication steps of microchannels with focus on the channel definition. The experimental results are reported on the thermal characterization of several prototypes, using a mixture of glycol and water as a liquid coolant. The prototypes have shown high cooling efficiency and high-pressure breaking strength.

  17. Hybrid laser integration for silicon photonics platform

    NASA Astrophysics Data System (ADS)

    Yang, Shuyu

    Silicon photonics has attracted extensive attention in both academia and industry in recent years, as an enabling technology to address the exponentially increasing demands for communication bandwidth. It brings state-of-the-art complementary metal-oxide-semiconductor (CMOS) processing technology to the field of photonic integration. The high yield and uniformity of silicon devices make it possible to build complex photonic systems-on-chip in large production volumes. Cutting-edge device performance has been demonstrated on this platform, including high-speed modulators, photodetectors, and passive devices such as the Y-junction, waveguide crossing, and arrayed waveguide gratings. As the device library quickly matures, an integrated laser source for a transmitter remains missing from the design kit. I demonstrated hybrid external cavity lasers by integrating reflective optical semiconductor amplifiers and silicon photonics chips. The gain chip and silicon chip can be designed and optimized independently, which is a significant advantage compared to bonding an III-V film on top of the silicon chip. Advanced optoelectronics packaging processes can be leveraged for chip alignment. Tunable C-Band (near 1550 nm) lasers with 10 mW on-chip power and less than 220 kHz bandwidth are demonstrated. O-Band lasers (operating near 1310 nm) as well as successful data transmission at 10 Gb/s and 40 Gb/s using the hybrid laser as the light source are also demonstrated. I designed a single cavity, multi wavelength laser by utilizing a quantum dot SOA, Sagnac loop and micro-ring based silicon photonics half cavity. Four lasing peaks with less than 3 dB power non-uniformity were measured, as well as 4 x 10 Gb/s error free data transmission. In addition to my main focus on RSOA/Silicon external cavity lasers, I propose and demonstrate a novel germanium-assisted grating coupler with low loss on-and-off chip fiber coupling. A coupling efficiency of 76% at 1.55 microm and 40 nm 1 d

  18. Silicon photonic devices for optoelectronic integrated circuits

    NASA Astrophysics Data System (ADS)

    Tien, Ming-Chun

    Electronic and photonic integrated circuits use optics to overcome bottlenecks of microelectronics in bandwidth and power consumption. Silicon photonic devices such as optical modulators, filters, switches, and photodetectors have being developed for integration with electronics based on existing complementary metal-oxide-semiconductor (CMOS) circuits. An important building block of photonic devices is the optical microresonator. On-chip whispering-gallery-mode optical resonators such as microdisks, microtoroids, and microrings have very small footprint, and thus are suitable for large scale integration. Micro-electro-mechanical system (MEMS) technology enables dynamic control and tuning of optical functions. In this dissertation, microring resonators with tunable power coupling ratio using MEMS electrostatic actuators are demonstrated. The fabrication is compatible with CMOS. By changing the physical gap spacing between the waveguide coupler and the microring, the quality factor of the microring can be tuned from 16,300 to 88,400. Moreover, we have demonstrated optical switches and tunable optical add-drop filters with an optical bandwidth of 10 GHz and an extinction ratio of 20 dB. Potentially, electronic control circuits can also be integrated. To realize photonic integrated circuits on silicon, electrically-pumped silicon lasers are desirable. However, because of the indirect bandgap, silicon is a poor material for light emission compared with direct-bandgap III-V compound semiconductors. Heterogeneous integration of III-V semiconductor lasers on silicon is an alternative to provide on-chip light sources. Using a room-temperature, post-CMOS optofluidic assembly technique, we have experimentally demonstrated an InGaAsP microdisk laser integrated with silicon waveguides. Pre-fabricated InGaAsP microdisk lasers were fluidically assembled and aligned to the silicon waveguides on silicon-on-insulator (SOI) with lithographic alignment accuracy. The assembled

  19. Silicon Photonic Devices and Their Applications

    NASA Astrophysics Data System (ADS)

    Li, Ying

    Silicon photonics is the study and application of photonic systems, which use silicon as an optical medium. Data is transferred in the systems by optical rays. This technology is seen as the substitutions of electric computer chips in the future and the means to keep tack on the Moore's law. Cavity optomechanics is a rising field of silicon photonics. It focuses on the interaction between light and mechanical objects. Although it is currently at its early stage of growth, this field has attracted rising attention. Here, we present highly sensitive optical detection of acceleration using an optomechanical accelerometer. The core part of this accelerometer is a slot-type photonic crystal cavity with strong optomechanical interactions. We first discuss theoretically the optomechanical coupling in the air-slot mode-gap photonic crystal cavity. The dispersive coupling gom is numerically calculated. Dynamical parametric oscillations for both cooling and amplification, in the resolved and unresolved sideband limit, are examined numerically, along with the displacement spectral density and cooling rates for the various operating parameters. Experimental results also demonstrated that the cavity has a large optomechanical coupling rate. The optically induced spring effect, damping and amplification of the mechanical modes are observed with measurements both in air and in vacuum. Then, we propose and demonstrate our optomechanical accelerometer. It can operate with a resolution of 730 ng/Hz1/2 (or equivalently 40.1 aN/Hz1/2) and with a transduction bandwidth of ≈ 85 kHz. We also demonstrate an integrated photonics device, an on-chip spectroscopy, in the last part of this thesis. This new type of on-chip microspectrometer is based on the Vernier effect of two cascaded micro-ring cavities. It can measure optical spectrum with a bandwidth of 74nm and a resolution of 0.22 nm in a small footprint of 1.5 mm2.

  20. Multifunctional optomechanical dynamics in integrated silicon photonics

    NASA Astrophysics Data System (ADS)

    Li, Huan

    Light can generate forces on matter. The nature of these forces is electromagnetic force, or Lorentz force. The emergence and rapid progress of nanotechnology provided an unprecedented platform where the very feeble optical forces began to play significant roles. The interactions between light and matter in nanoscale has been the focus of almost a decade of active theoretical and experimental investigations, which are still ongoing and constitute a whole new burgeoning branch of nanotechnology, nano-optomechanical systems (NOMS). In such context, the general goal of my research is to generate, enhance and control optical forces on silicon photonics platforms, with a focus on developing new functionalities and demonstrating novel effects, which will potentially lead to a new class of silicon photonic devices for a broad spectrum of applications. In this dissertation, the concept of optical force and the general background of the NOMS research area are first introduced. The general goal of the silicon photonics research area and the research presented in this dissertation is then described. Subsequently, the fundamental theory for optical force is summarized. The different methods to calculate optical forces are enumerated and briefly reviewed. Integrated hybrid plasmonic waveguide (HPWG) devices have been successfully fabricated and the enhanced optical forces experimentally measured for the first time. All-optical amplification of RF signals has been successfully demonstrated. The optical force generated by one laser is used to mechanically change the optical path and hence the output power of another laser. In addition, completely optically tunable mechanical nonlinear behavior has been demonstrated for the first time and systematically studied. Optomechanical photon shuttling between photonic cavities has been demonstrated with a "photon see-saw" device. This photon see-saw is a novel multicavity optomechanical device which consists of two photonic crystal

  1. Photonic crystal slab quantum cascade detector

    SciTech Connect

    Reininger, Peter Schwarz, Benedikt; Harrer, Andreas; Zederbauer, Tobias; Detz, Hermann; Maxwell Andrews, Aaron; Gansch, Roman; Schrenk, Werner; Strasser, Gottfried

    2013-12-09

    In this Letter, we demonstrate the design, fabrication, and characterization of a photonic crystal slab quantum cascade detector (PCS-QCD). By employing a specifically designed resonant cavity, the performance of the photodetector is improved in three distinct ways. The PCS makes the QCD sensitive to surface normal incident light. It resonantly enhances the photon lifetime inside the active zone, thus increasing the photocurrent significantly. And, the construction form of the device inherently decreases the noise. Finally, we compare the characteristics of the PCS-QCD to a PCS - quantum well infrared photodetector and outline the advantages for certain fields of applications.

  2. Amorphous silicon based radiation detectors

    SciTech Connect

    Perez-Mendez, V.; Cho, G.; Drewery, J.; Jing, T.; Kaplan, S.N.; Qureshi, S.; Wildermuth, D. ); Fujieda, I.; Street, R.A. )

    1991-07-01

    We describe the characteristics of thin(1 {mu}m) and thick (>30{mu}m) hydrogenated amorphous silicon p-i-n diodes which are optimized for detecting and recording the spatial distribution of charged particles, x-rays and {gamma} rays. For x-ray, {gamma} ray, and charged particle detection we can use thin p-i-n photosensitive diode arrays coupled to evaporated layers of suitable scintillators. For direct detection of charged particles with high resistance to radiation damage, we use the thick p-i-n diode arrays. 13 refs., 7 figs.

  3. Characterization of Silicon Photomultiplier Detectors using Cosmic Radiation

    NASA Astrophysics Data System (ADS)

    Zavala, Favian; Castro, Juan; Niduaza, Rexavalmar; Wedel, Zachary; Fan, Sewan; Ritt, Stefan; Fatuzzo, Laura

    2014-03-01

    The silicon photomultiplier light detector has gained a lot of attention lately in fields such as particle physics, astrophysics, and medical physics. Its popularity stems from its lower cost, compact size, insensitivity to magnetic fields, and its excellent ability to distinguish a quantized number of photons. They are normally operated at room temperature and biased above their breakdown voltages. As such, they may also exhibit properties that may hinder their optimal operation which include a thermally induced high dark count rate, after pulse effects, and cross talk from photons in nearby pixels. At this poster session, we describe our data analysis and our endeavor to characterize the multipixel photon counter (MPPC) detectors from Hamamatsu under different bias voltages and temperature conditions. Particularly, we describe our setup which uses cosmic rays to induce scintillation light delivered to the detector by wavelength shifting optical fibers and the use of a fast 1 GHz waveform sampler, the domino ring sampler (DRS4) digitizer board. Department of Education grant number P031S90007.

  4. Novel photon detectors for focusing DIRC prototype

    NASA Astrophysics Data System (ADS)

    Field, C.; Hadig, T.; Jain, M.; Leith, D. W. G. S.; Mazaheri, G.; Ratcliff, B. N.; Schwiening, J.; Va'vra, J.

    2004-02-01

    For present BaBar DIRC, the Cherenkov angular resolution is dominated by three contributions—the chromatic error, bar thickness and pixel size. We have designed the Focusing DIRC prototype, which potentially can reduce the chromatic error by a precise timing in the range of 50-100 ps per photon, and the bar thickness by a focusing mirror. This paper describes two novel photon detectors, which are candidates for this type of concept: Hamamatsu 64-channel multi-anode Flat Panel H-8500 PMTs and Burle 64-channel micro-channel plate MCP-PMTs. The detectors were tested with a PiLas laser diode light pulse providing 35 ps FWHM timing resolution. A single-photon timing resolution of (1) σ˜120-140 ps was achieved with the Hamamatsu PMTs, and (2) σ˜55 ps with the Burle MCP-PMTs. To achieve the good timing resolution results, we have developed a new fast amplifier and a constant-fraction discriminator. We have also developed a computer-controlled scanning setup, which allows a detailed study of the relative efficiency response to single photons.

  5. Enabling photon counting detectors with dynamic attenuators

    NASA Astrophysics Data System (ADS)

    Hsieh, Scott S.; Pelc, Norbert J.

    2014-03-01

    Photon-counting x-ray detectors (PCXDs) are being investigated as a replacement for conventional x-ray detectors because they promise several advantages, including better dose efficiency, higher resolution and spectral imaging. However, many of these advantages disappear when the x-ray flux incident on the detector is too high. We recently proposed a dynamic, piecewise-linear attenuator (or beam shaping filter) that can control the flux incident on the detector. This can restrict the operating range of the PCXD to keep the incident count rate below a given limit. We simulated a system with the piecewise-linear attenuator and a PCXD using raw data generated from forward projected DICOM files. We investigated the classic paralyzable and nonparalyzable PCXD as well as a weighted average of the two, with the weights chosen to mimic an existing PCXD (Taguchi et al, Med Phys 2011). The dynamic attenuator has small synergistic benefits with the nonparalyzable detector and large synergistic benefits with the paralyzable detector. Real PCXDs operate somewhere between these models, and the weighted average model still shows large benefits from the dynamic attenuator. We conclude that dynamic attenuators can reduce the count rate performance necessary for adopting PCXDs.

  6. Signal formation in irradiated silicon detectors

    NASA Astrophysics Data System (ADS)

    Baldassarri, B.; Cartiglia, N.; Cenna, F.; Sadrozinski, H.; Seiden, A.

    2017-02-01

    In this paper we present an initial study on the effects induced by radiation on the signal generated by a minimum ionising particle in silicon detector. The results are obtained by implementing in the simulation programme Weightfield2 (WF2) charge carrier trapping and non linear distribution of the electric field. Results of sample simulations are presented, along with a discussion of the limitations of the current approach and ideas for future improvements.

  7. Silicon technologies for arrays of Single Photon Avalanche Diodes

    PubMed Central

    Ceccarelli, Francesco; Rech, Ivan; Ghioni, Massimo

    2016-01-01

    In order to fulfill the requirements of many applications, we recently developed a new technology aimed at combining the advantages of traditional thin and thick silicon Single Photon Avalanche Diodes (SPAD). In particular we demonstrated single-pixel detectors with a remarkable improvement in the Photon Detection Efficiency in the red/near-infrared spectrum (e.g. 40% at 800nm) while maintaining a timing jitter better than 100ps. In this paper we discuss the limitations of such Red-Enhanced (RE) technology from the point of view of the fabrication of small arrays of SPAD and we propose modifications to the structure aimed at overcoming these issues. We also report the first preliminary experimental results attained on devices fabricated adopting the improved structure. PMID:27761058

  8. The Belle II Silicon Vertex Detector

    NASA Astrophysics Data System (ADS)

    Friedl, M.; Bergauer, T.; Dolejschi, P.; Frankenberger, A.; Gfall, I.; Irmler, C.; Obermayer, T.; Onuki, Y.; Smiljic, D.; Tsuboyama, T.; Valentan, M.

    The KEKB factory (Tsukuba, Japan) has been shut down in mid-2010 after reaching a total integrated luminosity of 1ab-1. Recently, the work on an upgrade of the collider (SuperKEKB), aiming at an ultimate luminosity of 8×1035 cm-2s-1, has started. This is 40 times the peak value of the previous system and thus also requires a redesign of the Belle detector (leading to Belle II), especially its Silicon Vertex Detector (SVD), which surrounds the beam pipe. Similar to its predecessor, the future Belle II SVD will again consist of four layers of double-sided silicon strip sensors (DSSD), but at higher radii. Moreover, a double-layer PiXel Detector (PXD) will complement the SVD as the innermost sensing device. All DSSDs will be made from 6" silicon wafers and read out by APV25 chips, which were originally developed for the CMS experiment. That system was proven to meet the requirements for Belle II in matters of occupancy and dead time. Since the KEKB factory operates at relatively low energy, material inside the active volume has to be minimized in order to reduce multiple scattering. This can be achieved by the Origami chip-on-sensor concept, including a very light-weight mechanical support structure made from carbon fiber reinforced Airex foam. Moreover, CO2 cooling for the front-end chips will ensure high efficiency at minimum material budget.

  9. The Belle II Silicon Vertex Detector

    NASA Astrophysics Data System (ADS)

    Friedl, M.; Ackermann, K.; Aihara, H.; Aziz, T.; Bergauer, T.; Bozek, A.; Campbell, A.; Dingfelder, J.; Drasal, Z.; Frankenberger, A.; Gadow, K.; Gfall, I.; Haba, J.; Hara, K.; Hara, T.; Higuchi, T.; Himori, S.; Irmler, C.; Ishikawa, A.; Joo, C.; Kah, D. H.; Kang, K. H.; Kato, E.; Kiesling, C.; Kodys, P.; Kohriki, T.; Koike, S.; Kvasnicka, P.; Marinas, C.; Mayekar, S. N.; Mibe, T.; Mohanty, G. B.; Moll, A.; Negishi, K.; Nakayama, H.; Natkaniec, Z.; Niebuhr, C.; Onuki, Y.; Ostrowicz, W.; Park, H.; Rao, K. K.; Ritter, M.; Rozanska, M.; Saito, T.; Sakai, K.; Sato, N.; Schmid, S.; Schnell, M.; Shimizu, N.; Steininger, H.; Tanaka, S.; Tanida, K.; Taylor, G.; Tsuboyama, T.; Ueno, K.; Uozumi, S.; Ushiroda, Y.; Valentan, M.; Yamamoto, H.

    2013-12-01

    The KEKB machine and the Belle experiment in Tsukuba (Japan) are now undergoing an upgrade, leading to an ultimate luminosity of 8×1035 cm-2 s-1 in order to measure rare decays in the B system with high statistics. The previous vertex detector cannot cope with this 40-fold increase of luminosity and thus needs to be replaced. Belle II will be equipped with a two-layer Pixel Detector surrounding the beam pipe, and four layers of double-sided silicon strip sensors at higher radii than the old detector. The Silicon Vertex Detector (SVD) will have a total sensitive area of 1.13 m2 and 223,744 channels-twice as many as its predecessor. All silicon sensors will be made from 150 mm wafers in order to maximize their size and thus to reduce the relative contribution of the support structure. The forward part has slanted sensors of trapezoidal shape to improve the measurement precision and to minimize the amount of material as seen by particles from the vertex. Fast-shaping front-end amplifiers will be used in conjunction with an online hit time reconstruction algorithm in order to reduce the occupancy to the level of a few percent at most. A novel “Origami” chip-on-sensor scheme is used to minimize both the distance between strips and amplifier (thus reducing the electronic noise) as well as the overall material budget. This report gives an overview on the status of the Belle II SVD and its components, including sensors, front-end detector ladders, mechanics, cooling and the readout electronics.

  10. Commissioning and operation of the CDF silicon detector

    SciTech Connect

    S. D'Auria

    2002-01-18

    The CDF-II silicon detector has been partially commissioned and used for taking preliminary physics data. This paper is a report on commissioning and initial operations of the 5.8m{sup 2} silicon detector. This experience can be useful to the large silicon systems that are presently under construction.

  11. Microstructured silicon neutron detectors for security applications

    NASA Astrophysics Data System (ADS)

    Esteban, S.; Fleta, C.; Guardiola, C.; Jumilla, C.; Pellegrini, G.; Quirion, D.; Rodriguez, J.; Lozano, M.

    2014-12-01

    In this paper we present the design and performance of a perforated thermal neutron silicon detector with a 6LiF neutron converter. This device was manufactured within the REWARD project workplace whose aim is to develop and enhance technologies for the detection of nuclear and radiological materials. The sensor perforated structure results in a higher efficiency than that obtained with an equivalent planar sensor. The detectors were tested in a thermal neutron beam at the nuclear reactor at the Instituto Superior Técnico in Lisbon and the intrinsic detection efficiency for thermal neutrons and the gamma sensitivity were obtained. The Geant4 Monte Carlo code was used to simulate the experimental conditions, i.e. thermal neutron beam and the whole detector geometry. An intrinsic thermal neutron detection efficiency of 8.6%±0.4% with a discrimination setting of 450 keV was measured.

  12. Amorphous silicon detectors in positron emission tomography

    SciTech Connect

    Conti, M. Lawrence Berkeley Lab., CA ); Perez-Mendez, V. )

    1989-12-01

    The physics of the detection process is studied and the performances of different Positron Emission Tomography (PET) system are evaluated by theoretical calculation and/or Monte Carlo Simulation (using the EGS code) in this paper, whose table of contents can be summarized as follows: a brief introduction to amorphous silicon detectors and some useful equation is presented; a Tantalum/Amorphous Silicon PET project is studied and the efficiency of the systems is studied by Monte Carlo Simulation; two similar CsI/Amorphous Silicon PET projects are presented and their efficiency and spatial resolution are studied by Monte Carlo Simulation, light yield and time characteristics of the scintillation light are discussed for different scintillators; some experimental result on light yield measurements are presented; a Xenon/Amorphous Silicon PET is presented, the physical mechanism of scintillation in Xenon is explained, a theoretical estimation of total light yield in Xenon and the resulting efficiency is discussed altogether with some consideration of the time resolution of the system; the amorphous silicon integrated electronics is presented, total noise and time resolution are evaluated in each of our applications; the merit parameters {epsilon}{sup 2}{tau}'s are evaluated and compared with other PET systems and conclusions are drawn; and a complete reference list for Xenon scintillation light physics and its applications is presented altogether with the listing of the developed simulation programs.

  13. Waveguide-Coupled Superconducting Nanowire Single-Photon Detectors

    NASA Technical Reports Server (NTRS)

    Beyer, Andrew D.; Briggs, Ryan M.; Marsili, Francesco; Cohen, Justin D.; Meenehan, Sean M.; Painter, Oskar J.; Shaw, Matthew D.

    2015-01-01

    We have demonstrated WSi-based superconducting nanowire single-photon detectors coupled to SiNx waveguides with integrated ring resonators. This photonics platform enables the implementation of robust and efficient photon-counting detectors with fine spectral resolution near 1550 nm.

  14. Silicon photonic devices based on binary blazed gratings

    NASA Astrophysics Data System (ADS)

    Zhou, Zhiping; Yu, Li

    2013-09-01

    Optical technology is poised to revolutionize short-reach communication systems, and the leading technology is silicon photonics. Silicon photonic devices have attracted more and more attention and have been increasingly studied in recent years. Grating, which functions as a building block for many passive and active devices, is widely used in silicon photonics. This review presents some silicon photonic devices based on binary blazed gratings, such as grating couplers, beam splitters, polarization beam splitters, broadband reflectors, and narrow filters, that demonstrate much better performance than those based on uniform gratings, owing to the novel characteristics of binary blazed gratings.

  15. Study on photon sensitivity of silicon diodes related to materials used for shielding

    NASA Astrophysics Data System (ADS)

    Moiseev, T.

    1999-08-01

    Large area silicon diodes used in electronic neutron dosemeters have a significant over-response to X- and gamma-rays, highly non-linear at photon energies below 200 keV. This over-response to photons is proportional to the diode's active area and strongly affects the neutron sensitivity of such dosemeters. Since silicon diodes are sensitive to light and electromagnetic fields, most diode detector assemblies are provided with a shielding, sometimes also used as radiation filter. In this paper, the influence of materials covering the diode's active area is investigated using the MCNP-4A code by estimating the photon induced pulses in a typical silicon wafer (300 μm thickness and 1 cm diameter) when provided with a front case cover. There have been simulated small-size diode front covers made of several materials with low neutron interaction cross-sections like aluminium, TEFLON, iron and lead. The estimated number of induced pulses in the silicon wafer is calculated for each type of shielding at normal photon incidence for several photon energies from 9.8 keV up to 1.15 MeV and compared with that in a bare silicon wafer. The simulated pulse height spectra show the origin of the photon-induced pulses in silicon for each material used as protective cover: the photoelectric effect for low Z front case materials at low-energy incident photons (up to about 65 keV) and the Compton and build-up effects for high Z case materials at higher photon energies. A simple means to lower and flatten the photon response of silicon diodes over an extended X- and gamma rays energy range is proposed by designing a composed photon filter.

  16. Radiation damage studies for the D0 silicon detector

    SciTech Connect

    Lehner, F.; /Zurich U.

    2004-01-01

    We report on irradiation studies performed on spare production silicon detector modules for the current D0 silicon detector. The lifetime expectations due to radiation damage effects of the existing silicon detector are reviewed. A new upgrade project was started with the goal of a complete replacement of the existing silicon detector. In that context, several investigations on the radiation hardness of new prototype silicon microstrip detectors were carried out. The irradiation on different detector types was performed with 10 MeV protons up to fluences of 10{sup 14} p/cm{sup 2} at the J.R. Mcdonald Laboratory at Kansas State University. The flux calibration was carefully checked using different normalization techniques. As a result, we observe roughly 40-50% less radiation damage in silicon for 10 MeV p exposure than it is expected by the predicted NIEL scaling.

  17. Optimizing timing performance of silicon photomultiplier-based scintillation detectors

    PubMed Central

    Yeom, Jung Yeol; Vinke, Ruud

    2013-01-01

    Precise timing resolution is crucial for applications requiring photon time-of-flight (ToF) information such as ToF positron emission tomography (PET). Silicon photomultipliers (SiPM) for PET, with their high output capacitance, are known to require custom preamplifiers to optimize timing performance. In this paper, we describe simple alternative front-end electronics based on a commercial low-noise RF preamplifier and methods that have been implemented to achieve excellent timing resolution. Two radiation detectors with L(Y)SO scintillators coupled to Hamamatsu SiPMs (MPPC S10362–33-050C) and front-end electronics based on an RF amplifier (MAR-3SM+), typically used for wireless applications that require minimal additional circuitry, have been fabricated. These detectors were used to detect annihilation photons from a Ge-68 source and the output signals were subsequently digitized by a high speed oscilloscope for offline processing. A coincident resolving time (CRT) of 147 ± 3 ps FWHM and 186 ± 3 ps FWHM with 3 × 3 × 5 mm3 and with 3 × 3 × 20 mm3 LYSO crystal elements were measured, respectively. With smaller 2 × 2 × 3 mm3 LSO crystals, a CRT of 125 ± 2 ps FWHM was achieved with slight improvement to 121 ± 3 ps at a lower temperature (15°C). Finally, with the 20 mm length crystals, a degradation of timing resolution was observed for annihilation photon interactions that occur close to the photosensor compared to shallow depth-of-interaction (DOI). We conclude that commercial RF amplifiers optimized for noise, besides their ease of use, can produce excellent timing resolution comparable to best reported values acquired with custom readout electronics. On the other hand, as timing performance degrades with increasing photon DOI, a head-on detector configuration will produce better CRT than a side-irradiated setup for longer crystals. PMID:23369872

  18. Ultra-Fast Silicon Detectors for 4D tracking

    NASA Astrophysics Data System (ADS)

    Sola, V.; Arcidiacono, R.; Bellora, A.; Cartiglia, N.; Cenna, F.; Cirio, R.; Durando, S.; Ferrero, M.; Galloway, Z.; Gruey, B.; Freeman, P.; Mashayekhi, M.; Mandurrino, M.; Monaco, V.; Mulargia, R.; Obertino, M. M.; Ravera, F.; Sacchi, R.; Sadrozinski, H. F.-W.; Seiden, A.; Spencer, N.; Staiano, A.; Wilder, M.; Woods, N.; Zatserklyaniy, A.

    2017-02-01

    We review the progress toward the development of a novel type of silicon detectors suited for tracking with a picosecond timing resolution, the so called Ultra-Fast Silicon Detectors. The goal is to create a new family of particle detectors merging excellent position and timing resolution with GHz counting capabilities, very low material budget, radiation resistance, fine granularity, low power, insensitivity to magnetic field, and affordability. We aim to achieve concurrent precisions of ~ 10 ps and ~ 10 μm with a 50 μm thick sensor. Ultra-Fast Silicon Detectors are based on the concept of Low-Gain Avalanche Detectors, which are silicon detectors with an internal multiplication mechanism so that they generate a signal which is factor ~ 10 larger than standard silicon detectors.

  19. Silicon-based photonic crystal waveguides and couplers

    NASA Astrophysics Data System (ADS)

    Farrell, Stephen G.

    2008-10-01

    Most commercial photonics-related research and development efforts currently fall into one or both of the following technological sectors: silicon photonics and photonic integrated circuits. Silicon photonics [18] is the field concerned with assimilating photonic elements into the well-established CMOS VLSI architecture and IC manufacturing. The convergence of these technologies would be mutually advantageous: photonic devices could increase bus speeds and greatly improve chip-to-chip and board-to-board data rates, whereas photonics, as a field, would benefit from mature silicon manufacturing and economies of scale. On the other hand, those in the photonic integrated circuit sector seek to continue the miniaturization of photonic devices in an effort to obtain an appreciable share of the great windfall of profits that occur when manufacturing, packaging, and testing costs are substantially reduced by shrinking photonic elements to chip-scale dimensions. Integrated photonics companies may [12] or may not [34] incorporate silicon as the platform. In this thesis, we seek to further develop a technology that has the potential to facilitate the forging of silicon photonics and photonic integrated circuits: photonic crystals on silicon-on-insulator substrates. We will first present a brief overview of photonic crystals and their physical properties. We will then detail a finely-tuned procedure for fabricating two-dimensional photonic crystal in the silicon-on-insulator material system. We will then examine transmission properties of our fabricated devices including propagation loss, group index dispersion, and coupling efficiency of directional couplers. Finally, we will present a description of a system for adiabatically tapering optical fibers and the results of using tapered fibers for efficiently coupling light into photonic crystal devices.

  20. Stacked Metal Silicide/Silicon Far-Infrared Detectors

    NASA Technical Reports Server (NTRS)

    Maserjian, Joseph

    1988-01-01

    Selective doping of silicon in proposed metal silicide/silicon Schottky-barrier infrared photodetector increases maximum detectable wavelength. Stacking layers to form multiple Schottky barriers increases quantum efficiency of detector. Detectors of new type enhance capabilities of far-infrared imaging arrays. Grows by molecular-beam epitaxy on silicon waferscontaining very-large-scale integrated circuits. Imaging arrays of detectors made in monolithic units with image-preprocessing circuitry.

  1. Self consistent, absolute calibration technique for photon number resolving detectors.

    PubMed

    Avella, A; Brida, G; Degiovanni, I P; Genovese, M; Gramegna, M; Lolli, L; Monticone, E; Portesi, C; Rajteri, M; Rastello, M L; Taralli, E; Traina, P; White, M

    2011-11-07

    Well characterized photon number resolving detectors are a requirement for many applications ranging from quantum information and quantum metrology to the foundations of quantum mechanics. This prompts the necessity for reliable calibration techniques at the single photon level. In this paper we propose an innovative absolute calibration technique for photon number resolving detectors, using a pulsed heralded photon source based on parametric down conversion. The technique, being absolute, does not require reference standards and is independent upon the performances of the heralding detector. The method provides the results of quantum efficiency for the heralded detector as a function of detected photon numbers. Furthermore, we prove its validity by performing the calibration of a Transition Edge Sensor based detector, a real photon number resolving detector that has recently demonstrated its effectiveness in various quantum information protocols.

  2. High resolution amorphous silicon radiation detectors

    DOEpatents

    Street, Robert A.; Kaplan, Selig N.; Perez-Mendez, Victor

    1992-01-01

    A radiation detector employing amorphous Si:H cells in an array with each detector cell having at least three contiguous layers (n type, intrinsic, p type), positioned between two electrodes to which a bias voltage is applied. An energy conversion layer atop the silicon cells intercepts incident radiation and converts radiation energy to light energy of a wavelength to which the silicon cells are responsive. A read-out device, positioned proximate to each detector element in an array allows each such element to be interrogated independently to determine whether radiation has been detected in that cell. The energy conversion material may be a layer of luminescent material having a columnar structure. In one embodiment a column of luminescent material detects the passage therethrough of radiation to be detected and directs a light beam signal to an adjacent a-Si:H film so that detection may be confined to one or more such cells in the array. One or both electrodes may have a comb structure, and the teeth of each electrode comb may be interdigitated for capacitance reduction. The amorphous Si:H film may be replaced by an amorphous Si:Ge:H film in which up to 40 percent of the amorphous material is Ge. Two dimensional arrays may be used in X-ray imaging, CT scanning, crystallography, high energy physics beam tracking, nuclear medicine cameras and autoradiography.

  3. High resolution amorphous silicon radiation detectors

    DOEpatents

    Street, R.A.; Kaplan, S.N.; Perez-Mendez, V.

    1992-05-26

    A radiation detector employing amorphous Si:H cells in an array with each detector cell having at least three contiguous layers (n-type, intrinsic, p-type), positioned between two electrodes to which a bias voltage is applied. An energy conversion layer atop the silicon cells intercepts incident radiation and converts radiation energy to light energy of a wavelength to which the silicon cells are responsive. A read-out device, positioned proximate to each detector element in an array allows each such element to be interrogated independently to determine whether radiation has been detected in that cell. The energy conversion material may be a layer of luminescent material having a columnar structure. In one embodiment a column of luminescent material detects the passage therethrough of radiation to be detected and directs a light beam signal to an adjacent a-Si:H film so that detection may be confined to one or more such cells in the array. One or both electrodes may have a comb structure, and the teeth of each electrode comb may be interdigitated for capacitance reduction. The amorphous Si:H film may be replaced by an amorphous Si:Ge:H film in which up to 40 percent of the amorphous material is Ge. Two dimensional arrays may be used in X-ray imaging, CT scanning, crystallography, high energy physics beam tracking, nuclear medicine cameras and autoradiography. 18 figs.

  4. Wavelength multicasting in silicon photonic nanowires.

    PubMed

    Biberman, Aleksandr; Lee, Benjamin G; Turner-Foster, Amy C; Foster, Mark A; Lipson, Michal; Gaeta, Alexander L; Bergman, Keren

    2010-08-16

    We demonstrate a scalable, energy-efficient, and pragmatic method for high-bandwidth wavelength multicasting using FWM in silicon photonic nanowires. We experimentally validate up to a sixteen-way multicast of 40-Gb/s NRZ data using spectral and temporal responses, and evaluate the resulting data integrity degradation using BER measurements and power penalty performance metrics. We further examine the impact of this wavelength multicasting scalability on conversion efficiency. Finally, we experimentally evaluate up to a three-way multicast of 160-Gb/s pulsed-RZ data using spectral and temporal responses, representing the first on-chip wavelength multicasting of pulsed-RZ data.

  5. Ultra-fast silicon detectors (UFSD)

    NASA Astrophysics Data System (ADS)

    Sadrozinski, H. F.-W.; Anker, A.; Chen, J.; Fadeyev, V.; Freeman, P.; Galloway, Z.; Gruey, B.; Grabas, H.; John, C.; Liang, Z.; Losakul, R.; Mak, S. N.; Ng, C. W.; Seiden, A.; Woods, N.; Zatserklyaniy, A.; Baldassarri, B.; Cartiglia, N.; Cenna, F.; Ferrero, M.; Pellegrini, G.; Hidalgo, S.; Baselga, M.; Carulla, M.; Fernandez-Martinez, P.; Flores, D.; Merlos, A.; Quirion, D.; Mikuž, M.; Kramberger, G.; Cindro, V.; Mandić, I.; Zavrtanik, M.

    2016-09-01

    We report on measurements on Ultra-Fast Silicon Detectors (UFSD) which are based on Low-Gain Avalanche Detectors (LGAD). They are n-on-p sensors with internal charge multiplication due to the presence of a thin, low-resistivity diffusion layer below the junction, obtained with a highly doped implant. We have performed several beam tests with LGAD of different gain and report the measured timing resolution, comparing it with laser injection and simulations. For the 300 μm thick LGAD, the timing resolution measured at test beams is 120 ps while it is 57 ps for IR laser, in agreement with simulations using Weightfield2. For the development of thin sensors and their readout electronics, we focused on the understanding of the pulse shapes and point out the pivotal role the sensor capacitance plays.

  6. Characterization of Silicon Detector Readout Electronics

    SciTech Connect

    Jones, M.

    2015-07-22

    Configuration and calibration of the front-end electronics typical of many silicon detector configurations were investigated in a lab activity based on a pair of strip sensors interfaced with FSSR2 read-out chips and an FPGA. This simple hardware configuration, originally developed for a telescope at the Fermilab Test Beam Facility, was used to measure thresholds and noise on individual readout channels and to study the influence that different configurations of the front-end electronics had on the observed levels of noise in the system. An understanding of the calibration and operation of this small detector system provided an opportunity to explore the architecture of larger systems such as those currently in use at LHC experiments.

  7. Status and performance of the CDF Run II silicon detector

    SciTech Connect

    Maki, Tuula; /Helsinki Inst. of Phys.

    2006-10-01

    The CDF silicon detector is one of the largest silicon detectors in operation. It has a total of 722,432 electronic channels, and it covers a sensor surface area of 6 m{sup 2}. The detector has been operating reliably for five years, and it has recorded 1.5 fb{sup -1} of data. This article discusses experiences of operating such a large, complex system as well as the longevity of the detector.

  8. Charge collection in silicon strip detectors

    SciTech Connect

    Kraner, H.W.; Beuttenmuller, R.; Ludlam, T.; Hanson, A.L.; Jones, K.W.; Radeka, V.; Heijne, E.H.M.

    1982-11-01

    The use of position sensitive silicon detectors as very high resolution tracking devices in high energy physics experiments has been a subject of intense development over the past few years. Typical applications call for the detection of minimum ionizing particles with position measurement accuracy of 10 ..mu..m in each detector plane. The most straightforward detector geometry is that in which one of the collecting electrodes is subdivided into closely spaced strips, giving a high degree of segmentation in one coordinate. Each strip may be read out as a separate detection element, or, alternatively, resistive and/or capacitive coupling between adjacent strips may be exploited to interpolate the position via charge division measrurements. With readout techniques that couple several strips, the numer of readout channels can, in principle, be reduced by large factors without sacrificing the intrinsic position accuracy. The testing of individual strip properties and charge division between strips has been carried out with minimum ionizing particles or beams for the most part except in one case which used alphs particless scans. This paper describes the use of a highly collimated MeV proton beam for studies of the position sensing properties of representative one dimensional strip detectors.

  9. Memory effect in silicon time-gated single-photon avalanche diodes

    SciTech Connect

    Dalla Mora, A.; Contini, D. Di Sieno, L.; Tosi, A.; Boso, G.; Villa, F.; Pifferi, A.

    2015-03-21

    We present a comprehensive characterization of the memory effect arising in thin-junction silicon Single-Photon Avalanche Diodes (SPADs) when exposed to strong illumination. This partially unknown afterpulsing-like noise represents the main limiting factor when time-gated acquisitions are exploited to increase the measurement dynamic range of very fast (picosecond scale) and faint (single-photon) optical signals following a strong stray one. We report the dependences of this unwelcome signal-related noise on photon wavelength, detector temperature, and biasing conditions. Our results suggest that this so-called “memory effect” is generated in the deep regions of the detector, well below the depleted region, and its contribution on detector response is visible only when time-gated SPADs are exploited to reject a strong burst of photons.

  10. Liquid crystal claddings for passive temperature stabilization of silicon photonics

    NASA Astrophysics Data System (ADS)

    Ptasinski, Joanna N.; Khoo, Iam-Choon; Fainman, Yeshaiahu

    2014-10-01

    Silicon photonics allows for high density component integration on a single chip and it brings promise for low-loss, high-bandwidth data processing in modern computing systems. Owing to silicon's high positive thermo-optic coefficient, temperature fluctuations tend to degrade the device performance. This work explores passive thermal stabilization of silicon photonic devices using nematic liquid crystal (NLC) claddings, as they possess large negative thermo-optic coefficients in addition to low absorption at the telecommunication wavelengths.

  11. PECASE: All-Optical Photonic Integrated Circuits in Silicon

    DTIC Science & Technology

    2011-01-14

    elements for dense integrated photonics . Figure 33 The cross sections of the simulated electric energy distributions of (a) the 1st and (b) the 2nd...Soltani, and A. Adibi, “High Quality Planar Silicon Nitride Microdisk Resonators for Integrated Photonics in the Visible Wavelength Range,” Optics...Soltani, and A. Adibi, “High quality planar silicon nitride microdisk resonators for integrated photonics in the visible wavelength range,” Opt. Express

  12. Lithium-drifted silicon detector with segmented contacts

    DOEpatents

    Tindall, Craig S.; Luke, Paul N.

    2006-06-13

    A method and apparatus for creating both segmented and unsegmented radiation detectors which can operate at room temperature. The devices include a metal contact layer, and an n-type blocking contact formed from a thin layer of amorphous semiconductor. In one embodiment the material beneath the n-type contact is n-type material, such as lithium compensated silicon that forms the active region of the device. The active layer has been compensated to a degree at which the device may be fully depleted at low bias voltages. A p-type blocking contact layer, or a p-type donor material can be formed beneath a second metal contact layer to complete the device structure. When the contacts to the device are segmented, the device is capable of position sensitive detection and spectroscopy of ionizing radiation, such as photons, electrons, and ions.

  13. Why I am optimistic about the silicon-photonic route to quantum computing

    NASA Astrophysics Data System (ADS)

    Rudolph, Terry

    2017-03-01

    This is a short overview explaining how building a large-scale, silicon-photonic quantum computer has been reduced to the creation of good sources of 3-photon entangled states (and may simplify further). Given such sources, each photon needs to pass through a small, constant, number of components, interfering with at most 2 other spatially nearby photons, and current photonics engineering has already demonstrated the manufacture of thousands of components on two-dimensional semiconductor chips with performance that, once scaled up, allows the creation of tens of thousands of photons entangled in a state universal for quantum computation. At present the fully integrated, silicon-photonic architecture we envisage involves creating the required entangled states by starting with single-photons produced non-deterministically by pumping silicon waveguides (or cavities) combined with on-chip filters and nanowire superconducting detectors to herald that a photon has been produced. These sources are multiplexed into being near-deterministic, and the single photons then passed through an interferometer to non-deterministically produce small entangled states—necessarily multiplexed to near-determinism again. This is followed by a "ballistic" scattering of the small-scale entangled photons through an interferometer such that some photons are detected, leaving the remainder in a large-scale entangled state which is provably universal for quantum computing implemented by single-photon measurements. There are a large number of questions regarding the optimum ways to make and use the final cluster state, dealing with static imperfections, constructing the initial entangled photon sources and so on, that need to be investigated before we can aim for millions of qubits capable of billions of computational time steps. The focus in this article is on the theoretical side of such questions.

  14. Negative Avalanche Feedback Detectors for Photon-Counting Optical Communications

    NASA Technical Reports Server (NTRS)

    Farr, William H.

    2009-01-01

    Negative Avalanche Feedback photon counting detectors with near-infrared spectral sensitivity offer an alternative to conventional Geiger mode avalanche photodiode or phototube detectors for free space communications links at 1 and 1.55 microns. These devices demonstrate linear mode photon counting without requiring any external reset circuitry and may even be operated at room temperature. We have now characterized the detection efficiency, dark count rate, after-pulsing, and single photon jitter for three variants of this new detector class, as well as operated these uniquely simple to use devices in actual photon starved free space optical communications links.

  15. Design optimization of ultra-fast silicon detectors

    NASA Astrophysics Data System (ADS)

    Cartiglia, N.; Arcidiacono, R.; Baselga, M.; Bellan, R.; Boscardin, M.; Cenna, F.; Dalla Betta, G. F.; Fernndez-Martnez, P.; Ferrero, M.; Flores, D.; Galloway, Z.; Greco, V.; Hidalgo, S.; Marchetto, F.; Monaco, V.; Obertino, M.; Pancheri, L.; Paternoster, G.; Picerno, A.; Pellegrini, G.; Quirion, D.; Ravera, F.; Sacchi, R.; Sadrozinski, H. F.-W.; Seiden, A.; Solano, A.; Spencer, N.

    2015-10-01

    Low-Gain Avalanche Diodes (LGAD) are silicon detectors with output signals that are about a factor of 10 larger than those of traditional sensors. In this paper we analyze how the design of LGAD can be optimized to exploit their increased output signal to reach optimum timing performances. Our simulations show that these sensors, the so-called Ultra-Fast Silicon Detectors (UFSD), will be able to reach a time resolution factor of 10 better than that of traditional silicon sensors.

  16. Glucose sensing by means of silicon photonics

    NASA Astrophysics Data System (ADS)

    Bockstaele, Ronny; Ryckeboer, Eva; Hattasan, Nannicha; De Koninck, Yannick; Muneeb, Muhammad; Verstuyft, Steven; Delbeke, Danaë; Bogaerts, Wim; Roelkens, Gunther; Baets, Roel

    2014-03-01

    Diabetes is a fast growing metabolic disease, where the patients suffer from disordered glucose blood levels. Monitoring the blood glucose values in combination with extra insulin injection is currently the only therapy to keep the glucose concentration in diabetic patients under control, minimizing the long-term effects of elevated glucose concentrations and improving quality of life of the diabetic patients. Implantable sensors allow continuous glucose monitoring, offering the most reliable data to control the glucose levels. Infrared absorption spectrometers offer a non-chemical measurement method to determine the small glucose concentrations in blood serum. In this work, a spectrometer platform based on silicon photonics is presented, allowing the realization of very small glucose sensors suitable for building implantable sensors. A proof-of-concept of a spectrometer with integrated evanescent sample interface is presented, and the route towards a fully implantable spectrometer is discussed.

  17. Direct charge sharing observation in single-photon-counting pixel detector

    NASA Astrophysics Data System (ADS)

    Pellegrini, G.; Maiorino, M.; Blanchot, G.; Chmeissani, M.; Garcia, J.; Lozano, M.; Martinez, R.; Puigdengoles, C.; Ullan, M.

    2007-04-01

    In photon-counting imaging devices, charge sharing can limit the detector spatial resolution and contrast, as multiple counts can be induced in adjacent pixels as a result of the spread of the charge cloud generated from a single X-ray photon of high energy in the detector bulk. Although debated for a long time, the full impact of charge sharing has not been completely assessed. In this work, the importance of charge sharing in pixellated CdTe and silicon detectors is studied by exposing imaging devices to different low activity sources. These devices are made of Si and CdTe pixel detector bump-bonded to Medipix2 single-photon-counting chips with a 55 μm pixel pitch. We will show how charge sharing affects the spatial detector resolution depending on incident particle type (alpha, beta and gamma), detector bias voltage and read-out chip threshold. This study will give an insight on the impact on the design and operation of pixel detectors coupled to photon-counting devices for imaging applications.

  18. TCPD: A micropattern photon detector hybrid for RICH applications

    NASA Astrophysics Data System (ADS)

    Hamar, G.; Varga, D.

    2017-03-01

    A micropattern and wire chamber hybrid has been constructed for UV photon detection, and its performance evaluated. It is revealed that such combination retains some key advantages of both the Thick-GEM primary and CCC secondary amplification stages, and results in a high gain gaseous photon detector with outstanding stability. Key features such as MIP suppression, detection efficiency and photon cluster size are discussed. The capability of the detector for UV photon detection has been established and proven with Cherenkov photons in particle beam tests.

  19. Mechanical design of the CDF SVX II silicon vertex detector

    SciTech Connect

    Skarha, J.E.

    1994-08-01

    A next generation silicon vertex detector is planned at CDF for the 1998 Tevatron collider run with the Main Injector. The SVX II silicon vertex detector will allow high luminosity data-taking, enable online triggering of secondary vertex production, and greatly increase the acceptance for heavy flavor physics at CDF. The design specifications, geometric layout, and early mechanical prototyping work for this detector are discussed.

  20. Single Photon Counting Detectors for Low Light Level Imaging Applications

    NASA Astrophysics Data System (ADS)

    Kolb, Kimberly

    2015-10-01

    This dissertation presents the current state-of-the-art of semiconductor-based photon counting detector technologies. HgCdTe linear-mode avalanche photodiodes (LM-APDs), silicon Geiger-mode avalanche photodiodes (GM-APDs), and electron-multiplying CCDs (EMCCDs) are compared via their present and future performance in various astronomy applications. LM-APDs are studied in theory, based on work done at the University of Hawaii. EMCCDs are studied in theory and experimentally, with a device at NASA's Jet Propulsion Lab. The emphasis of the research is on GM-APD imaging arrays, developed at MIT Lincoln Laboratory and tested at the RIT Center for Detectors. The GM-APD research includes a theoretical analysis of SNR and various performance metrics, including dark count rate, afterpulsing, photon detection efficiency, and intrapixel sensitivity. The effects of radiation damage on the GM-APD were also characterized by introducing a cumulative dose of 50 krad(Si) via 60 MeV protons. Extensive development of Monte Carlo simulations and practical observation simulations was completed, including simulated astronomical imaging and adaptive optics wavefront sensing. Based on theoretical models and experimental testing, both the current state-of-the-art performance and projected future performance of each detector are compared for various applications. LM-APD performance is currently not competitive with other photon counting technologies, and are left out of the application-based comparisons. In the current state-of-the-art, EMCCDs in photon counting mode out-perform GM-APDs for long exposure scenarios, though GM-APDs are better for short exposure scenarios (fast readout) due to clock-induced-charge (CIC) in EMCCDs. In the long term, small improvements in GM-APD dark current will make them superior in both long and short exposure scenarios for extremely low flux. The efficiency of GM-APDs will likely always be less than EMCCDs, however, which is particularly disadvantageous for

  1. Spectrometric characterization of amorphous silicon PIN detectors

    NASA Astrophysics Data System (ADS)

    Leyva, A.; Ramírez, F. J.; Ortega, Y.; Estrada, M.; Cabal, A.; Cerdeira, A.; Díaz, A.

    2000-10-01

    During the last years, much interest has been dedicated to the use of amorphous silicon PIN diodes as particle and radiation detectors for medical applications. This work presents the spectrometric characterization of PECVD high deposition rate diodes fabricated at our laboratory, with thickness up to 17.5 μm. Results show that the studied devices detect the Am241 alpha particles and the medical X-rays generated by a mammograph model Senographe 700T from General Electric Possible reasons of the observed energy losses are discussed in the text. Using the SRIM2000 program, the transit of 5.5 MeV alpha particles through a diode was simulated, determining the optimum thickness for these particles to deposit their energy in the intrinsic layer of the diode.

  2. Controlling the spectrum of photons generated on a silicon nanophotonic chip

    NASA Astrophysics Data System (ADS)

    Kumar, Ranjeet; Ong, Jun Rong; Savanier, Marc; Mookherjea, Shayan

    2014-11-01

    Directly modulated semiconductor lasers are widely used, compact light sources in optical communications. Semiconductors can also be used to generate nonclassical light; in fact, CMOS-compatible silicon chips can be used to generate pairs of single photons at room temperature. Unlike the classical laser, the photon-pair source requires control over a two-dimensional joint spectral intensity (JSI) and it is not possible to process the photons separately, as this could destroy the entanglement. Here we design a photon-pair source, consisting of planar lightwave components fabricated using CMOS-compatible lithography in silicon, which has the capability to vary the JSI. By controlling either the optical pump wavelength, or the temperature of the chip, we demonstrate the ability to select different JSIs, with a large variation in the Schmidt number. Such control can benefit high-dimensional communications where detector-timing constraints can be relaxed by realizing a large Schmidt number in a small frequency range.

  3. Controlling the spectrum of photons generated on a silicon nanophotonic chip.

    PubMed

    Kumar, Ranjeet; Ong, Jun Rong; Savanier, Marc; Mookherjea, Shayan

    2014-11-20

    Directly modulated semiconductor lasers are widely used, compact light sources in optical communications. Semiconductors can also be used to generate nonclassical light; in fact, CMOS-compatible silicon chips can be used to generate pairs of single photons at room temperature. Unlike the classical laser, the photon-pair source requires control over a two-dimensional joint spectral intensity (JSI) and it is not possible to process the photons separately, as this could destroy the entanglement. Here we design a photon-pair source, consisting of planar lightwave components fabricated using CMOS-compatible lithography in silicon, which has the capability to vary the JSI. By controlling either the optical pump wavelength, or the temperature of the chip, we demonstrate the ability to select different JSIs, with a large variation in the Schmidt number. Such control can benefit high-dimensional communications where detector-timing constraints can be relaxed by realizing a large Schmidt number in a small frequency range.

  4. SVX{prime}, the new CDF silicon vertex detector

    SciTech Connect

    Cihangir, S.; Gillespie, G.; Gonzalez, H.

    1994-08-26

    The Collider Detector at Fermilab (CDF) radiation hardened silicon vertex detector (SVX{prime}) is described. The new detector has several improvements over its predecessor such as better signal to noise and higher efficiency. It`s expected to have a radiation tolerance in excess of 1 Mrad. It has been taking data for several months and some preliminary results are shown.

  5. Silicon detector readout system using commercially available items

    SciTech Connect

    Green, D.

    1986-05-01

    The basic properties of silicon detectors are briefly noted, including bulk and electrical properties. Thermal and shot noise in front end amplifiers is discussed. The configuration of detectors and preamps is then briefly described. A detector test is described and results are given. (LEW)

  6. Electrical Control of Silicon Photonic Crystal Cavity by Graphene

    DTIC Science & Technology

    2012-01-01

    Electrical Control of Silicon Photonic Crystal Cavity by Graphene Arka Majumdar,†,‡,∥ Jonghwan Kim,†,∥ Jelena Vuckovic,‡ and Feng Wang...of electronics and photonics . The combination of graphene with photonic crystals is promising for electro-optic modulation. In this paper, we...demonstrate that by electrostatic gating a single layer of graphene on top of a photonic crystal cavity, the cavity resonance can be changed significantly. A

  7. InP lateral overgrowth technology for silicon photonics

    NASA Astrophysics Data System (ADS)

    Wang, Zhechao; Junesand, Carl; Metaferia, Wondwosen; Hu, Chen; Lourdudoss, Sebastian; Wosinski, Lech

    2010-12-01

    Epitaxial Lateral Overgrowth has been proposed as a key technology of a novel hybrid integration platform for active silicon photonic components. By fabricating silicon oxide mask on top of a thin InP seed layer, we can use the so called defect necking effect to filter out the threading dislocations propagating from the seed layer. By optimizing the process, thin dislocation free InP layers have been successfully obtained on top of silicon wafer. The obtained characterization results show that the grown InP layer has very high quality, which can be used as the base for further process of active photonic components on top of silicon.

  8. Status and performance of the CDF Run II silicon detectors

    SciTech Connect

    Nielsen, Jason; /LBL, Berkeley

    2004-11-01

    In 2001, an upgraded silicon detector system was installed in the CDF II experiment on the Tevatron at Fermilab. The complete system consists of three silicon microstrip detectors: SVX II with five layers for precision tracking, Layer 00 with one beampipe-mounted layer for vertexing, and two Intermediate Silicon Layers located between SVX II and the main CDF II tracking chamber. Currently all detectors in the system are operating at or near design levels. The performance of the combined silicon system is excellent in the context of CDF tracking algorithms, and the first useful physics results from the innermost Layer 00 detector have been recently documented. Operational and monitoring efforts have also been strengthened to maintain silicon efficiency through the end of Run 2 at the Tevatron.

  9. Dual exposure, two-photon, conformal phasemask lithography for three dimensional silicon inverse woodpile photonic crystals

    SciTech Connect

    Shir, Daniel J.; Nelson, Erik C.; Chanda, Debashis; Brzezinski, Andrew; Braun, Paul V.; Rogers, John A.; Wiltzius, Pierre

    2010-01-01

    The authors describe the fabrication and characterization of three dimensional silicon inverse woodpile photonic crystals. A dual exposure, two-photon, conformal phasemask technique is used to create high quality polymer woodpile structures over large areas with geometries that quantitatively match expectations based on optical simulations. Depositing silicon into these templates followed by the removal of the polymer results in silicon inverse woodpile photonic crystals for which calculations indicate a wide, complete photonic bandgap over a range of structural fill fractions. Spectroscopic measurements of normal incidence reflection from both the polymer and siliconphotonic crystals reveal good optical properties.

  10. THE 15 LAYER SILICON DRIFT DETECTOR TRACKER IN EXPERIMENT 896.

    SciTech Connect

    PANDY,S.U.

    1998-11-08

    Large linear silicon drift detectors have been developed and are in production for use in several experiments. Recently 15 detectors were used as a tracking device in BNL-AGS heavy ion experiment (E896). The detectors were successfully operated in a 6.2 T magnetic field. The behavior of the detectors, such as drift uniformity, resolution, and charge collection efficiency are presented. The effect of the environment on the detector performance is discussed. Some results from the experimental run are presented. The detectors performed well in an experimental environment. This is the first tracking application of these detectors.

  11. Charge injectors of ALICE Silicon Drift Detector

    NASA Astrophysics Data System (ADS)

    Rashevsky, A.; Batigne, G.; Beole, S.; Coli, S.; Crescio, E.; Deremigis, P.; Giraudo, G.; Mazza, G.; Prino, F.; Riccati, L.; Rivetti, A.; Toscano, L.; Tosello, F.; Vacchi, A.; Wheadon, R.; Zampa, G.

    2007-03-01

    Large area, 7.25×8.76 cm2, Silicon Drift Detector (SDD) has been developed for the ALICE experiment at CERN [A. Vacchi, et al., Nucl. Instr. and Meth. A 306 (1991) 187; A. Rashevsky, et al., Nucl. Instr. and Meth. A 461 (2001) 133-138; A. Rashevsky, et al., Nucl. Instr. and Meth. A 485 (2002) 54; P. Burger, C. Piemonte, A. Rashevsky, A. Roncastri, A. Vacchi, INFN/TC-02/07; C. Piemonte, A. Rashevsky, INFN/TC-02/08; C. Piemonte, A. Rashevsky, D. Nouais, INFN/TC-00/04. C. Piemonte, A. Rashevsky, A. Vacchi, ALICE-INT-2002-15, 2002; Inner Tracking System, CERN/LHCC, June 1999]. SDDs form two out of six cylindrical layers of the ALICE inner tracking system. The 260 high-quality SDDs needed to equip these two layers have been selected. One of the detector design elements devoted to allow controlled operating conditions is the on-board arrays of point-like charge injectors [D. Nouais, et al., CERN-ALICE-PUB-99-31; V. Bonvicini, et al., Il Nuovo Cimento 112AN (1-2) (1999) 137-146]. In the case of an SDD they are essential to trace, with the required frequency and precision, the changes in drift velocity induced by temperature variations. In order to ensure operating stability during the 10 years of the ALICE experiment the bias scheme of the charge injectors exploits the electrical properties not only of a detector itself, but also those of the cables mounted onto it, thus constituting a module. Computer simulations of the equivalent circuit revealed a significant improvement of the injection efficiency. Subsequent experimental tests of the first assembled modules confirmed the predicted performances. We report the layout of the charge injectors integrated in the ALICE SDD, as well as test results.

  12. Status and performance of the CDF Run II silicon detector

    SciTech Connect

    Boveia, A.; /UC, Santa Barbara

    2005-01-01

    The CDF Run II silicon detector with its 8 layers of double- and single-sided silicon microstrip sensors and a total 722,432 readout channels is one of the largest silicon detector devices currently in use by a HEP experiment. We report our experience commissioning and operating this complex device during the first 4 years of Run II. As the luminosity delivered by the Tevatron increases, we have observed measurable effects of radiation damage in studies of charge collection and noise versus applied bias voltage at many different integrated luminosities. We discuss these studies and their impact on the expected lifetime of the detector.

  13. Scalable Quantum Photonics with Single Color Centers in Silicon Carbide.

    PubMed

    Radulaski, Marina; Widmann, Matthias; Niethammer, Matthias; Zhang, Jingyuan Linda; Lee, Sang-Yun; Rendler, Torsten; Lagoudakis, Konstantinos G; Son, Nguyen Tien; Janzén, Erik; Ohshima, Takeshi; Wrachtrup, Jörg; Vučković, Jelena

    2017-02-24

    Silicon carbide is a promising platform for single photon sources, quantum bits (qubits), and nanoscale sensors based on individual color centers. Toward this goal, we develop a scalable array of nanopillars incorporating single silicon vacancy centers in 4H-SiC, readily available for efficient interfacing with free-space objective and lensed-fibers. A commercially obtained substrate is irradiated with 2 MeV electron beams to create vacancies. Subsequent lithographic process forms 800 nm tall nanopillars with 400-1400 nm diameters. We obtain high collection efficiency of up to 22 kcounts/s optical saturation rates from a single silicon vacancy center while preserving the single photon emission and the optically induced electron-spin polarization properties. Our study demonstrates silicon carbide as a readily available platform for scalable quantum photonics architecture relying on single photon sources and qubits.

  14. Small area silicon diffused junction x-ray detectors

    SciTech Connect

    Walton, J.T.; Pehl, R.H.; Larsh, A.E.

    1981-10-01

    The low temperature performance of silicon diffused junction detectors in the measurement of low energy x-rays is reported. The detectors have an area of 0.04 cm/sup 2/ and a thickness of 100 ..mu..m. The spectral resolutions of these detectors were found to be in close agreement with expected values indicating that the defects introduced by the high temperature processing required in the device fabrication were not deleteriously affecting the detection of low energy x-rays. Device performance over a temperature range of 77 to 150/sup 0/K is given. These detectors were designed to detect low energy x-rays in the presence of minimum ionizing electrons. The successful application of silicon diffused junction technology to x-ray detector fabrication may facilitate the development of other novel silicon x-ray detector designs.

  15. A prototype of radiation imaging detector using silicon strip sensors

    NASA Astrophysics Data System (ADS)

    Ryu, S.; Hyun, H. J.; Kah, D. H.; Kang, H. D.; Kim, H. J.; Kim, Kyeryung; Kim, Y. I.; Park, H.; Son, D. H.

    2008-06-01

    The aim of this work is to evaluate the performance of a strip sensor with a single photon counting data acquisition system based on VA1 readout chips to study the feasibility of a silicon microstrip detector for medical application. The sensor is an AC-coupled single-sided microstrip sensor and the active area of the sensor is 32.0 mm×32.0 mm with a thickness of 380 μm. The sensor has 64 readout strips with a pitch of 500 μm. The sensor was biased at 45 V and the experiment was performed at room temperature. Two silicon strip sensors were mounted perpendicularly one another to get two-dimensional position information with a 5 mm space gap. Two low noise analog ASICs, VA1 chips, were used for signal readout of the strip sensor. The assembly of sensors and readout electronics was housed in an Al light-tight box. A CsI(Tl) scintillation crystal and a 2-in. photomultiplier tube were used to trigger signal events. The data acquisition system was based on a 64 MHz FADC and control softwares for the PC-Linux platform. Imaging tests were performed by using a lead phantom with a 90Sr radioactive source and a 45 MeV proton beam at Korea Institute of Radiological and Medical Science in Seoul, respectively. Results of the S/ N ratio measurement and phantom images are presented.

  16. Target molecules detection by waveguiding in a photonic silicon membrane

    DOEpatents

    Letant, Sonia; Van Buuren, Anthony; Terminello, Louis

    2004-08-31

    Disclosed herein is a photonic silicon filter capable of binding and detecting biological and chemical target molecules in liquid or gas samples. A photonic waveguiding silicon filter with chemical and/or biological anchors covalently attached to the pore walls selectively bind target molecules. The system uses transmission curve engineering principles to allow measurements to be made in situ and in real time to detect the presence of various target molecules and determine the concentration of bound target.

  17. Spectral response of multi-element silicon detectors

    SciTech Connect

    Ludewigt, B.A.; Rossington, C.S.; Chapman, K.

    1997-04-01

    Multi-element silicon strip detectors, in conjunction with integrated circuit pulse-processing electronics, offer an attractive alternative to conventional lithium-drifted silicon Si(Li) and high purity germanium detectors (HPGe) for high count rate, low noise synchrotron x-ray fluorescence applications. One of the major differences between the segmented Si detectors and the commercially available single-element Si(Li) or HPGe detectors is that hundreds of elements can be fabricated on a single Si substrate using standard silicon processing technologies. The segmentation of the detector substrate into many small elements results in very low noise performance at or near, room temperature, and the count rate of the detector is increased many-fold due to the multiplication in the total number of detectors. Traditionally, a single channel of detector with electronics can handle {approximately}100 kHz count rates while maintaining good energy resolution; the segmented detectors can operate at greater than MHz count rates merely due to the multiplication in the number of channels. One of the most critical aspects in the development of the segmented detectors is characterizing the charge sharing and charge loss that occur between the individual detector strips, and determining how these affect the spectral response of the detectors.

  18. Photon counting detector array algorithms for deep space optical communications

    NASA Astrophysics Data System (ADS)

    Srinivasan, Meera; Andrews, Kenneth S.; Farr, William H.; Wong, Andre

    2016-03-01

    For deep-space optical communications systems utilizing an uplink optical beacon, a single-photon-counting detector array on the flight terminal can be used to simultaneously perform uplink tracking and communications as well as accurate downlink pointing at photon-starved (pW=m2) power levels. In this paper, we discuss concepts and algorithms for uplink signal acquisition, tracking, and parameter estimation using a photon-counting camera. Statistical models of detector output data and signal processing algorithms are presented, incorporating realistic effects such as Earth background and detector/readout blocking. Analysis and simulation results are validated against measured laboratory data using state-of-the-art commercial photon-counting detector arrays, demonstrating sub-microradian tracking errors under channel conditions representative of deep space optical links.

  19. Miniature optical coherence tomography system based on silicon photonics

    NASA Astrophysics Data System (ADS)

    Margallo-Balbás, Eduardo; Pandraud, Gregory; French, Patrick J.

    2008-02-01

    Optical Coherence Tomography (OCT) is a promising medical imaging technique. It has found applications in many fields of medicine and has a large potential for the optical biopsy of tumours. One of the technological challenges impairing faster adoption of OCT is the relative complexity of the optical instrumentation required, which translates into expensive and bulky setups. In this paper we report an implementation of Time Domain OCT (TD-OCT) based on a silicon photonic platform. The devices are fabricated using Silicon-On-Insulator (SOI) wafers, on which rib waveguides are defined. While most of the components needed are well-known in this technology, a fast delay line with sufficient scanning range is a specific requirement of TD-OCT. In the system reported, this was obtained making use of the thermo-optical effect of silicon. By modulating the thermal resistance of the waveguide to the substrate, it is possible to establish a trade-off between maximum working frequency and power dissipation. Within this trade-off, the systems obtained can be operated in the kHz range, and they achieve temperature shifts corresponding to scanning ranges of over 2mm. Though the current implementation still requires external sources and detectors to be coupled to the Planar Lightwave Circuit (PLC), future work will include three-dimensional integration of these components onto the substrate. With the potential to include the read-out and driving electronics on the same die, the reported approach can yield extremely compact and low-cost TD-OCT systems, enabling a wealth of new applications, including gastrointestinal pills with optical biopsy capabilities.

  20. The SVX II Silicon Vertex Detector at CDF

    NASA Astrophysics Data System (ADS)

    Valls, Juan A.

    1999-08-01

    The Silicon VerteX detector (SVX II) for the CDF experiment at the Tevatron p overlinep collider is a 3-barrel 5-layer device with double-sided, AC-coupled silicon strip detectors. The readout is based on a custom IC, the SVX3 chip, capable of simultaneous acquisition, digitization and readout operation (dead-timeless). In this paper we report on the SVX II design and project status including mechanical design, frontend electronics, and data acquisition.

  1. Single photon avalanche detectors: prospects of new quenching and gain mechanisms

    NASA Astrophysics Data System (ADS)

    Hall, David; Liu, Yu-Hsin; Lo, Yu-Hwa

    2015-11-01

    While silicon single-photon avalanche diodes (SPAD) have reached very high detection efficiency and timing resolution, their use in fibre-optic communications, optical free space communications, and infrared sensing and imaging remains limited. III-V compounds including InGaAs and InP are the prevalent materials for 1550 nm light detection. However, even the most sensitive 1550 nm photoreceivers in optical communication have a sensitivity limit of a few hundred photons. Today, the only viable approach to achieve single-photon sensitivity at 1550 nm wavelength from semiconductor devices is to operate the avalanche detectors in Geiger mode, essentially trading dynamic range and speed for sensitivity. As material properties limit the performance of Ge and III-V detectors, new conceptual insight with regard to novel quenching and gain mechanisms could potentially address the performance limitations of III-V SPADs. Novel designs that utilise internal self-quenching and negative feedback can be used to harness the sensitivity of single-photon detectors,while drastically reducing the device complexity and increasing the level of integration. Incorporation of multiple gain mechanisms, together with self-quenching and built-in negative feedback, into a single device also hold promise for a new type of detector with single-photon sensitivity and large dynamic range.

  2. Afterpulse time spectra of high-speed photon detectors

    NASA Astrophysics Data System (ADS)

    Leskovar, B.

    1985-01-01

    Recent progress of understanding of the afterpulse time spectra of high-speed photon detectors using photoemission and secondary emission processes is reviewed and summarized. Furthermore, the afterpulse time spectra of high-gain conventionally designed and microchannel plate photon detectors was investigated. Specifically, the devices studied included RCA 8850, RCA 8854 and ITT F 4129g photomultipliers. Descriptions are given of the measuring techniques.

  3. Speckle imaging with the PAPA detector. [Precision Analog Photon Address

    NASA Technical Reports Server (NTRS)

    Papaliolios, C.; Nisenson, P.; Ebstein, S.

    1985-01-01

    A new 2-D photon-counting camera, the PAPA (precision analog photon address) detector has been built, tested, and used successfully for the acquisition of speckle imaging data. The camera has 512 x 512 pixels and operates at count rates of at least 200,000/sec. In this paper, technical details on the camera are presented and some of the laboratory and astronomical results are included which demonstrate the detector's capabilities.

  4. Investigation of the Effect of Temperature and Light Emission from Silicon Photomultiplier Detectors

    NASA Astrophysics Data System (ADS)

    Ruiz Castruita, Daniel; Ramos, Daniel; Hernandez, Victor; Niduaza, Rommel; Konx, Adrian; Fan, Sewan; Fatuzzo, Laura; Ritt, Stefan

    2015-04-01

    The silicon photomultiplier (SiPM) is an extremely sensitive light detector capable of measuring very dim light and operates as a photon-number resolving detector. Its high gain comes from operating at slightly above the breakdown voltage, which is also accompanied by a high dark count rate. At this conference poster session we describe our investigation of using SiPMs, the multipixel photon counters (MPPC) from Hamamatsu, as readout detectors for development in a cosmic ray scintillating detector array. Our research includes implementation of a novel design that automatically adjusts for the bias voltage to the MPPC detectors to compensate for changes in the ambient temperature. Furthermore, we describe our investigations for the MPPC detector characteristics at different bias voltages, temperatures and light emission properties. To measure the faint light emitted from the MPPC we use a photomultiplier tube capable of detecting single photons. Our data acquisition setup consists of a 5 Giga sample/second waveform digitizer, the DRS4, triggered to capture the MPPC detector waveforms. Analysis of the digitized waveforms, using the CERN package PAW, would be discussed and presented. US Department of Education Title V Grant PO31S090007.

  5. Silicon Detector System and Noise Modeling

    NASA Astrophysics Data System (ADS)

    Park, Chan Ho; Kyung, Richard

    2012-03-01

    We can postulate that dark matter are WIMPS, more specifically, Majorana particles called neutralinos floating through space. Upon neutralino-neutralino annihilation, they create a greater burst of other particles into space: these being all kinds of particles including anti-deuterons which are the indications of the existence of dark matter. For the development of the silicon detector, many factors including noise, shaping times and leakage current are considered. It is also an object of this study to find out factors affected by parallel noise such as leakage current and parallel resistance. High noise is not desirable, so we tried to avoid noise because it blurs the accurate readings that measure the x-ray signatures by adding a passivation material. We searched for the optimal resolution at which the FWHM is at a minimum at a specific shaping time, and for this, we used different shaping times to find the optimal resolution. Results shows where the paint/passivation material affects, and when is the best shaping time for the resolution measurement.

  6. Ultra-efficient 10 Gb/s hybrid integrated silicon photonic transmitter and receiver.

    PubMed

    Zheng, Xuezhe; Patil, Dinesh; Lexau, Jon; Liu, Frankie; Li, Guoliang; Thacker, Hiren; Luo, Ying; Shubin, Ivan; Li, Jieda; Yao, Jin; Dong, Po; Feng, Dazeng; Asghari, Mehdi; Pinguet, Thierry; Mekis, Attila; Amberg, Philip; Dayringer, Michael; Gainsley, Jon; Moghadam, Hesam Fathi; Alon, Elad; Raj, Kannan; Ho, Ron; Cunningham, John E; Krishnamoorthy, Ashok V

    2011-03-14

    Using low parasitic microsolder bumping, we hybrid integrated efficient photonic devices from different platforms with advanced 40 nm CMOS VLSI circuits to build ultra-low power silicon photonic transmitters and receivers for potential applications in high performance inter/intra-chip interconnects. We used a depletion racetrack ring modulator with improved electro-optic efficiency to allow stepper optical photo lithography for reduced fabrication complexity. Integrated with a low power cascode 2 V CMOS driver, the hybrid silicon photonic transmitter achieved better than 7 dB extinction ratio for 10 Gbps operation with a record low power consumption of 1.35 mW. A received power penalty of about 1 dB was measured for a BER of 10(-12) compared to an off-the-shelf lightwave LiNOb3 transmitter, which comes mostly from the non-perfect extinction ratio. Similarly, a Ge waveguide detector fabricated using 130 nm SOI CMOS process was integrated with low power VLSI circuits using hybrid bonding. The all CMOS hybrid silicon photonic receiver achieved sensitivity of -17 dBm for a BER of 10(-12) at 10 Gbps, consuming an ultra-low power of 3.95 mW (or 395 fJ/bit in energy efficiency). The scalable hybrid integration enables continued photonic device improvements by leveraging advanced CMOS technologies with maximum flexibility, which is critical for developing ultra-low power high performance photonic interconnects for future computing systems.

  7. DEPOSITS ON FLAME IONIZATION DETECTORS WITH SILICONE GUM RUBBER COLUMNS,

    DTIC Science & Technology

    During the preparative gas chromatography of some organophosphorus esters using a silicone gum rubber column, a copious white deposit was formed on...detector deposits were mainly silicon phosphate (2SiO2.P2O5), and the injection port samples were alpha cristobalite (SiO2).

  8. Development, prototyping and characterization of double sided silicon strip detectors

    NASA Astrophysics Data System (ADS)

    Topkar, Anita; Singh, Arvind; Aggarwal, Bharti; Kumar, Amit; Kumar, Arvind; Murali Krishna, L. V.; Das, D.

    2016-10-01

    Double sided DC-coupled silicon strip detectors with geometry of 65 mm×65 mm have been developed in India for nuclear physics experiments. The detectors have 64 P+ strips on the front side and 64 N+ strips on the backside with a pitch of 0.9 mm. These detectors were fabricated using a twelve mask layer process involving double sided wafer processing technology. Semiconductor process and device simulations were carried out in order to theoretically estimate the impact of important design and process parameters on the breakdown voltage of detectors. The performance of the first lot of prototype detectors has been studied using static characterization tests and using an alpha source. The characterization results demonstrate that the detectors have low leakage currents and good uniformity over the detector area of about 40 cm2. Overview of the detector design, fabrication process, simulation results and initial characterization results of the detectors are presented in this paper.

  9. Spin-photon entanglement interfaces in silicon carbide defect centers

    NASA Astrophysics Data System (ADS)

    Economou, Sophia E.; Dev, Pratibha

    2016-12-01

    Optically active spins in solid-state systems can be engineered to emit photons that are entangled with the spin in the solid. This allows for applications such as quantum communications, quantum key distribution, and distributed quantum computing. Recently, there has been a strong interest in silicon carbide defects, as they emit very close to the telecommunication wavelength, making them excellent candidates for long range quantum communications. In this work we develop explicit schemes for spin-photon entanglement in several SiC defects: the silicon monovacancy, the silicon divacancy, and the NV center in SiC. Distinct approaches are given for (i) single-photon and spin entanglement and (ii) the generation of long strings of entangled photons. The latter are known as cluster states and comprise a resource for measurement-based quantum information processing.

  10. Spin-photon entanglement interfaces in silicon carbide defect centers.

    PubMed

    Economou, Sophia E; Dev, Pratibha

    2016-12-16

    Optically active spins in solid-state systems can be engineered to emit photons that are entangled with the spin in the solid. This allows for applications such as quantum communications, quantum key distribution, and distributed quantum computing. Recently, there has been a strong interest in silicon carbide defects, as they emit very close to the telecommunication wavelength, making them excellent candidates for long range quantum communications. In this work we develop explicit schemes for spin-photon entanglement in several SiC defects: the silicon monovacancy, the silicon divacancy, and the NV center in SiC. Distinct approaches are given for (i) single-photon and spin entanglement and (ii) the generation of long strings of entangled photons. The latter are known as cluster states and comprise a resource for measurement-based quantum information processing.

  11. Thick Silicon Double-Sided Strip Detectors for Low-Energy Small-Animal SPECT

    PubMed Central

    Shokouhi, Sepideh; McDonald, Benjamin S.; Durko, Heather L.; Fritz, Mark A.; Furenlid, Lars R.; Peterson, Todd E.

    2010-01-01

    This work presents characterization studies of thick silicon double-sided strip detectors for a high-resolution small-animal SPECT. The dimension of these detectors is 60.4 mm × 60.4 mm × 1 mm. There are 1024 strips on each side that give the coordinates of the photon interaction, with each strip processed by a separate ASIC channel. Our measurement shows that intrinsic spatial resolution equivalent to the 59 μm strip pitch is attainable. Good trigger uniformity can be achieved by proper setting of a 4-bit DAC in each ASIC channel to remove trigger threshold variations. This is particularly important for triggering at low energies. The thick silicon DSSD (Double-sided strip detector) shows high potential for small-animal SPECT. PMID:20686626

  12. Status and upgrade plans of the Belle silicon vertex detector

    NASA Astrophysics Data System (ADS)

    Aihara, H.; Arakawa, T.; Asano, Y.; Aso, T.; Bakich, A.; Barbero, M.; Browder, T.; Chang, M. C.; Chao, Y.; Chen, K. F.; Chidzik, S.; Chouvikov, A.; Choi, Y. K.; Das, A.; Dalseno, J.; Fratina, S.; Friedl, M.; Fujiyama, Y.; Haba, J.; Hara, K.; Hara, T.; Harrop, B.; Hayashi, K.; Hazumi, M.; Heffernan, D.; Higuchi, T.; Hirakawa, T.; Irmler, C.; Ishino, H.; Joshi, N. K.; Kajiwara, S.; Kakuno, H.; Kameshima, T.; Kawasaki, T.; Kibayashi, A.; Kim, Y. J.; Koike, S.; Korpar, S.; Križan, P.; Kurashiro, H.; Kusaka, A.; Marlow, D.; Miyake, H.; Moloney, G. R.; Nakahama, Y.; Natkaniec, Z.; Okuno, S.; Ono, S.; Ostrowicz, W.; Ozaki, H.; Peak, L.; Pernicka, M.; Rosen, M.; Rozanska, M.; Sato, N.; Schmid, S.; Schümann, J.; Stanič, S.; Steininger, H.; Sumisawa, K.; Tajima, O.; Takahashi, T.; Tamura, N.; Tanaka, M.; Tani, N.; Taylor, G. N.; Trabelsi, K.; Tsuboyama, T.; Uchida, K.; Ueno, K.; Ushiroda, Y.; Varner, G.; Varvell, K.; Velikzhanin, Y. S.; Wang, C. C.; Wang, M. Z.; Watanabe, M.; Watanabe, Y.; Yamamoto, H.; Yamashita, Y.; Ziegler, T.

    2007-12-01

    The second generation of Belle Silicon Vertex Detector (SVD) has been efficiently operated for more than three years. With increasing beam-induced background, a degradation of the detector performance is expected. To avoid such a difficulty, we are planing a next upgrade, the third generation of the SVD. Currently, its design is almost finalized.

  13. Status of the CDF Run II Silicon Detector

    SciTech Connect

    S. Nahn

    2003-04-10

    A snapshot of the status of the CDF Run II Silicon Detector is presented, with a summary of commissioning issues since the start of Run II, current performance of the detector, and the use of the data in both the trigger and offline reconstruction.

  14. Fabrication of detectors and transistors on high-resistivity silicon

    SciTech Connect

    Holland, S.

    1988-06-01

    A new process for the fabrication of silicon p-i-n diode radiation detectors is described. The utilization of backside gettering in the fabrication process results in the actual physical removal of detrimental impurities from critical device regions. This reduces the sensitivity of detector properties to processing variables while yielding low diode reverse-leakage currents. In addition, gettering permits the use of processing temperatures compatible with integrated-circuit fabrication. P-channel MOSFETs and silicon p-i-n diodes have been fabricated simultaneously on 10 k..cap omega../center dot/cm<100> silicon using conventional integrated-circuit processing techniques. 25 refs., 5 figs.

  15. The vertex detector for the Lepton/Photon collaboration

    SciTech Connect

    Sullivan, J.P.; Boissevain, J.G.; Fox, D.; Hecke, H. van; Jacak, B.V.; Kapustinsky, J.S.; Leitch, M.J.; McGaughey, P.L.; Moss, J.M.; Sondheim, W.E.

    1991-12-31

    The conceptual design of the vertex detector for the Lepton/Photon Collaboration at RHIC is described, including simulations of its expected performance. The design consists of two con- centric layers of single-sided Si strips. The expected performance as a multiplicity detector and in measuring the pseudo-rapidity ({nu}) distribution is discussed as well as the expected vertex finding efficiency and accuracy. Various options which could be used to reduce the cost of the detector are also discussed.

  16. Heterodyne spectroscopy with superconducting single-photon detector

    NASA Astrophysics Data System (ADS)

    Lobanov, Yu. V.; Shcherbatenko, M. L.; Semenov, A. V.; Kovalyuk, V. V.; Korneev, A. A.; Goltsman, G. N.

    2016-12-01

    We demonstrate successful operation of a Superconducting Single Photon Detector (SSPD) as the core element in a heterodyne receiver. Irradiating the SSPD by both a local oscillator power and signal power simultaneously, we observed beat signal at the intermediate frequency of a few MHz. Gain bandwidth was found to coincide with the detector single pulse width, where the latter depends on the detector kinetic inductance, determined by the superconducting nanowire length.

  17. Silicon subsystem mechanical engineering work for the solenoidal detector collaboration

    SciTech Connect

    Miller, W.O.; Barney, M.; Byrd, D.; Christensen, R.W.; Dransfield, G.; Elder, M.; Gamble, M.; Crastataro, C.; Hanlon, J.; Jones, D.C.

    1995-02-01

    The silicon tracking system (STS) for the Solenoidal Detector Collaboration (SDC) represented an order of magnitude increase in size over any silicon system that had been previously built or even planned. In order to meet its performance requirements, it could not simply be a linear scaling of earlier systems, but instead required completely new concepts. The small size of the early systems made it possible to simply move the support hardware and services largely outside the active volume of the system. For a system five meters long, that simply is not an option. The design of the STS for the SDC experiment was the result of numerous compromises between the capabilities required to do the physics and the limitations imposed by cost, material properties, and silicon strip detector characteristics. From the point of view of the physics, the silicon system should start as close to the interaction point as possible. In addition, the detectors should measure the position of particles passing through them with no errors, and should not deflect or interact with the particles in any way. However, cost, radiation damage, and other factors limiting detector performance dictated, other, more realistic values. Radiation damage limited the inner radius of the silicon detectors to about 9 cm, whereas cost limited the outer radius of the detectors to about 50 cm. Cost also limits the half length of the system to about 250 cm. To control the effects of radiation damage on the detectors required operating the system at a temperature of 0{degrees}C or below, and maintaining that temperature throughout life of the system. To summarize, the physics and properties of the silicon strip detectors requires that the detectors be operated at or below 0{degrees}C, be positioned very accurately during assembly and remain positionally stable throughout their operation, and that all materials used be radiation hard and have a large thickness for one radiation length.

  18. High quality factor etchless silicon photonic ring resonators.

    PubMed

    Luo, Lian-Wee; Wiederhecker, Gustavo S; Cardenas, Jaime; Poitras, Carl; Lipson, Michal

    2011-03-28

    We demonstrate high quality factor etchless silicon photonic ring resonators fabricated by selective thermal oxidation of silicon without the silicon layer being exposed to any plasma etching throughout the fabrication process. We achieve a high intrinsic quality factor of 510,000 in 50 µm-radius ring resonators, corresponding to a ring loss of 0.8 dB/cm. The device has a total chip insertion loss of 2.5 dB, achieved by designing etchless silicon inverse nanotapers at both the input and output of the chip.

  19. Noise performance of the D0 layer 0 silicon detector

    SciTech Connect

    Johnson, M.; /Fermilab

    2006-11-01

    A new inner detector called Layer 0 has been added to the existing silicon detector for the DZero colliding beams experiment. This detector has an all carbon fiber support structure that employs thin copper clad Kapton sheets embedded in the surface of the carbon fiber structure to improve the grounding of the structure and a readout system that fully isolates the local detector ground from the rest of the detector. Initial measurements show efficiencies greater than 90% and 0.3 ADC count common mode contribution to the signal noise.

  20. Study of silicon photosensor applicability for scintillator detectors

    NASA Astrophysics Data System (ADS)

    Khilya, V. M.; Voronov, S. A.

    2016-02-01

    The aim of the present work is the creation a prototype of anticoincidence system AC for gamma-telescope GAMMA-400. The detectors of AC are developed on the basis of plastic scintillator and silicon photomultipliers. This work is focuses on research of applicability of silicon photomultipliers SiPM by company SensL, type 60000 with BC-408 plastics for the prototype of anticoincidence system detector ACtop. In frame of project the assembly for measuring of the SiPM characteristics such as the linearity, boundary of saturation, the time resolution was developed. The final stage of work was the integration of the prototype of anticoincidence detector.

  1. Flexible and tunable silicon photonic circuits on plastic substrates

    PubMed Central

    Chen, Yu; Li, Huan; Li, Mo

    2012-01-01

    Flexible microelectronics has shown tremendous promise in a broad spectrum of applications, especially those that cannot be addressed by conventional microelectronics in rigid materials and constructions. These unconventional yet important applications range from flexible consumer electronics to conformal sensor arrays and biomedical devices. A recent paradigm shift in implementing flexible electronics is to physically transfer highly integrated devices made in high-quality, crystalline semiconductors on to plastic substrates. Here we demonstrate a flexible form of silicon photonics using the transfer-and-bond fabrication method. Photonic circuits including interferometers and resonators have been transferred onto flexible plastic substrates with preserved functionalities and performance. By mechanically deforming, the optical characteristics of the devices can be tuned reversibly over a remarkably large range. The demonstration of the new flexible photonic systems based on the silicon-on-plastic (SOP) platform could open the door to many future applications, including tunable photonics, optomechanical sensors and biomechanical and bio-photonic probes. PMID:22953043

  2. Flexible and tunable silicon photonic circuits on plastic substrates

    NASA Astrophysics Data System (ADS)

    Chen, Yu; Li, Huan; Li, Mo

    2012-09-01

    Flexible microelectronics has shown tremendous promise in a broad spectrum of applications, especially those that cannot be addressed by conventional microelectronics in rigid materials and constructions. These unconventional yet important applications range from flexible consumer electronics to conformal sensor arrays and biomedical devices. A recent paradigm shift in implementing flexible electronics is to physically transfer highly integrated devices made in high-quality, crystalline semiconductors on to plastic substrates. Here we demonstrate a flexible form of silicon photonics using the transfer-and-bond fabrication method. Photonic circuits including interferometers and resonators have been transferred onto flexible plastic substrates with preserved functionalities and performance. By mechanically deforming, the optical characteristics of the devices can be tuned reversibly over a remarkably large range. The demonstration of the new flexible photonic systems based on the silicon-on-plastic (SOP) platform could open the door to many future applications, including tunable photonics, optomechanical sensors and biomechanical and bio-photonic probes.

  3. Investigation of energy weighting using an energy discriminating photon counting detector for breast CT

    SciTech Connect

    Kalluri, Kesava S.; Mahd, Mufeed; Glick, Stephen J.

    2013-08-15

    Purpose: Breast CT is an emerging imaging technique that can portray the breast in 3D and improve visualization of important diagnostic features. Early clinical studies have suggested that breast CT has sufficient spatial and contrast resolution for accurate detection of masses and microcalcifications in the breast, reducing structural overlap that is often a limiting factor in reading mammographic images. For a number of reasons, image quality in breast CT may be improved by use of an energy resolving photon counting detector. In this study, the authors investigate the improvements in image quality obtained when using energy weighting with an energy resolving photon counting detector as compared to that with a conventional energy integrating detector.Methods: Using computer simulation, realistic CT images of multiple breast phantoms were generated. The simulation modeled a prototype breast CT system using an amorphous silicon (a-Si), CsI based energy integrating detector with different x-ray spectra, and a hypothetical, ideal CZT based photon counting detector with capability of energy discrimination. Three biological signals of interest were modeled as spherical lesions and inserted into breast phantoms; hydroxyapatite (HA) to represent microcalcification, infiltrating ductal carcinoma (IDC), and iodine enhanced infiltrating ductal carcinoma (IIDC). Signal-to-noise ratio (SNR) of these three lesions was measured from the CT reconstructions. In addition, a psychophysical study was conducted to evaluate observer performance in detecting microcalcifications embedded into a realistic anthropomorphic breast phantom.Results: In the energy range tested, improvements in SNR with a photon counting detector using energy weighting was higher (than the energy integrating detector method) by 30%–63% and 4%–34%, for HA and IDC lesions and 12%–30% (with Al filtration) and 32%–38% (with Ce filtration) for the IIDC lesion, respectively. The average area under the receiver

  4. Investigation of energy weighting using an energy discriminating photon counting detector for breast CT

    PubMed Central

    Kalluri, Kesava S.; Mahd, Mufeed; Glick, Stephen J.

    2013-01-01

    Purpose: Breast CT is an emerging imaging technique that can portray the breast in 3D and improve visualization of important diagnostic features. Early clinical studies have suggested that breast CT has sufficient spatial and contrast resolution for accurate detection of masses and microcalcifications in the breast, reducing structural overlap that is often a limiting factor in reading mammographic images. For a number of reasons, image quality in breast CT may be improved by use of an energy resolving photon counting detector. In this study, the authors investigate the improvements in image quality obtained when using energy weighting with an energy resolving photon counting detector as compared to that with a conventional energy integrating detector. Methods: Using computer simulation, realistic CT images of multiple breast phantoms were generated. The simulation modeled a prototype breast CT system using an amorphous silicon (a-Si), CsI based energy integrating detector with different x-ray spectra, and a hypothetical, ideal CZT based photon counting detector with capability of energy discrimination. Three biological signals of interest were modeled as spherical lesions and inserted into breast phantoms; hydroxyapatite (HA) to represent microcalcification, infiltrating ductal carcinoma (IDC), and iodine enhanced infiltrating ductal carcinoma (IIDC). Signal-to-noise ratio (SNR) of these three lesions was measured from the CT reconstructions. In addition, a psychophysical study was conducted to evaluate observer performance in detecting microcalcifications embedded into a realistic anthropomorphic breast phantom. Results: In the energy range tested, improvements in SNR with a photon counting detector using energy weighting was higher (than the energy integrating detector method) by 30%–63% and 4%–34%, for HA and IDC lesions and 12%–30% (with Al filtration) and 32%–38% (with Ce filtration) for the IIDC lesion, respectively. The average area under the

  5. SENTIRAD—An innovative personal radiation detector based on a scintillation detector and a silicon photomultiplier

    NASA Astrophysics Data System (ADS)

    Osovizky, A.; Ginzburg, D.; Manor, A.; Seif, R.; Ghelman, M.; Cohen-Zada, I.; Ellenbogen, M.; Bronfenmakher, V.; Pushkarsky, V.; Gonen, E.; Mazor, T.; Cohen, Y.

    2011-10-01

    The alarming personal radiation detector (PRD) is a device intended for Homeland Security (HLS) applications. This portable device is designed to be worn or carried by security personnel to detect photon-emitting radioactive materials for the purpose of crime prevention. PRD is required to meet the scope of specifications defined by various HLS standards for radiation detection. It is mandatory that the device be sensitive and simultaneously small, pocket-sized, of robust mechanical design and carriable on the user's body. To serve these specialized purposes and requirements, we developed the SENTIRAD, a new radiation detector designed to meet the performance criteria established for counterterrorist applications. SENTIRAD is the first commercially available PRD based on a CsI(Tl) scintillation crystal that is optically coupled with a silicon photomultiplier (SiPM) serving as a light sensor. The rapidly developing technology of SiPM, a multipixel semiconductor photodiode that operates in Geiger mode, has been thoroughly investigated in previous studies. This paper presents the design considerations, constraints and radiological performance relating to the SENTIRAD radiation sensor.

  6. Interferometric Quantum-Nondemolition Single-Photon Detectors

    NASA Technical Reports Server (NTRS)

    Kok, Peter; Lee, Hwang; Dowling, Jonathan

    2007-01-01

    Two interferometric quantum-nondemolition (QND) devices have been proposed: (1) a polarization-independent device and (2) a polarization-preserving device. The prolarization-independent device works on an input state of up to two photons, whereas the polarization-preserving device works on a superposition of vacuum and single- photon states. The overall function of the device would be to probabilistically generate a unique detector output only when its input electromagnetic mode was populated by a single photon, in which case its output mode would also be populated by a single photon. Like other QND devices, the proposed devices are potentially useful for a variety of applications, including such areas of NASA interest as quantum computing, quantum communication, detection of gravity waves, as well as pedagogical demonstrations of the quantum nature of light. Many protocols in quantum computation and quantum communication require the possibility of detecting a photon without destroying it. The only prior single- photon-detecting QND device is based on quantum electrodynamics in a resonant cavity and, as such, it depends on the photon frequency. Moreover, the prior device can distinguish only between one photon and no photon. The proposed interferometric QND devices would not depend on frequency and could distinguish between (a) one photon and (b) zero or two photons. The first proposed device is depicted schematically in Figure 1. The input electromagnetic mode would be a superposition of a zero-, a one-, and a two-photon quantum state. The overall function of the device would be to probabilistically generate a unique detector output only when its input electromagnetic mode was populated by a single photon, in which case its output mode also would be populated by a single photon.

  7. Photon counting modules using RCA silicon avalanche photodiodes

    NASA Technical Reports Server (NTRS)

    Lightstone, Alexander W.; Macgregor, Andrew D.; Macsween, Darlene E.; Mcintyre, Robert J.; Trottier, Claude; Webb, Paul P.

    1989-01-01

    Avalanche photodiodes (APD) are excellent small area, solid state detectors for photon counting. Performance possibilities include: photon detection efficiency in excess of 50 percent; wavelength response from 400 to 1000 nm; count rate to 10 (exp 7) counts per sec; afterpulsing at negligible levels; timing resolution better than 1 ns. Unfortunately, these performance levels are not simultaneously available in a single detector amplifier configuration. By considering theoretical performance predictions and previous and new measurements of APD performance, the anticipated performance of a range of proposed APD-based photon counting modules is derived.

  8. Silicon position sensitive detectors for the HELIOS (NA34) experiment

    SciTech Connect

    Beuttenmuller, R.; Bisi, V.; Chesi, E.; Di Nardo, R.P.; Esten, M.J.; Giubellino, P.; Kraner, H.W.; Ludlam, T.W.; Meddi, F.; Piuz, F.

    1986-03-01

    Silicon detectors having both ''pad'' and strip position sensitive configurations have been fabricated for the HELIOS experiment which requires an elaborate pulse height-dependent trigger as well as one dimensional silicon strip position sensing. The trigger detector is a 400 element, 30 mm diameter detector with readout connections from a ceramic overlay board. Tests with full prototype detectors have shown essentially 100% detection efficiency and excellent pulse height resolution well capable of delineating 0, 1 or 2 hits per pad. Strip detectors with 25 ..mu..m pitch and a varying readout pitch have been tested, which utilize both capacitive and resistive charge division. Techniques for realization of required interstrip resistors will be discussed and results which may compare these readout methods will be reported. 11 refs., 13 figs.

  9. Flexible single-crystal silicon nanomembrane photonic crystal cavity.

    PubMed

    Xu, Xiaochuan; Subbaraman, Harish; Chakravarty, Swapnajit; Hosseini, Amir; Covey, John; Yu, Yalin; Kwong, David; Zhang, Yang; Lai, Wei-Cheng; Zou, Yi; Lu, Nanshu; Chen, Ray T

    2014-12-23

    Flexible inorganic electronic devices promise numerous applications, especially in fields that could not be covered satisfactorily by conventional rigid devices. Benefits on a similar scale are also foreseeable for silicon photonic components. However, the difficulty in transferring intricate silicon photonic devices has deterred widespread development. In this paper, we demonstrate a flexible single-crystal silicon nanomembrane photonic crystal microcavity through a bonding and substrate removal approach. The transferred cavity shows a quality factor of 2.2×10(4) and could be bent to a curvature of 5 mm radius without deteriorating the performance compared to its counterparts on rigid substrates. A thorough characterization of the device reveals that the resonant wavelength is a linear function of the bending-induced strain. The device also shows a curvature-independent sensitivity to the ambient index variation.

  10. Infrared transparent graphene heater for silicon photonic integrated circuits.

    PubMed

    Schall, Daniel; Mohsin, Muhammad; Sagade, Abhay A; Otto, Martin; Chmielak, Bartos; Suckow, Stephan; Giesecke, Anna Lena; Neumaier, Daniel; Kurz, Heinrich

    2016-04-18

    Thermo-optical tuning of the refractive index is one of the pivotal operations performed in integrated silicon photonic circuits for thermal stabilization, compensation of fabrication tolerances, and implementation of photonic operations. Currently, heaters based on metal wires provide the temperature control in the silicon waveguide. The strong interaction of metal and light, however, necessitates a certain gap between the heater and the photonic structure to avoid significant transmission loss. Here we present a graphene heater that overcomes this constraint and enables an energy efficient tuning of the refractive index. We achieve a tuning power as low as 22 mW per free spectral range and fast response time of 3 µs, outperforming metal based waveguide heaters. Simulations support the experimental results and suggest that for graphene heaters the spacing to the silicon can be further reduced yielding the best possible energy efficiency and operation speed.

  11. Communication Limits Due to Photon-Detector Jitter

    NASA Technical Reports Server (NTRS)

    Moision, Bruce E.; Farr, William H.

    2008-01-01

    A theoretical and experimental study was conducted of the limit imposed by photon-detector jitter on the capacity of a pulse-position-modulated optical communication system in which the receiver operates in a photon-counting (weak-signal) regime. Photon-detector jitter is a random delay between impingement of a photon and generation of an electrical pulse by the detector. In the study, jitter statistics were computed from jitter measurements made on several photon detectors. The probability density of jitter was mathematically modeled by use of a weighted sum of Gaussian functions. Parameters of the model were adjusted to fit histograms representing the measured-jitter statistics. Likelihoods of assigning detector-output pulses to correct pulse time slots in the presence of jitter were derived and used to compute channel capacities and corresponding losses due to jitter. It was found that the loss, expressed as the ratio between the signal power needed to achieve a specified capacity in the presence of jitter and that needed to obtain the same capacity in the absence of jitter, is well approximated as a quadratic function of the standard deviation of the jitter in units of pulse-time-slot duration.

  12. Degenerate photon-pair generation in an ultracompact silicon photonic crystal waveguide.

    PubMed

    He, Jiakun; Clark, Alex S; Collins, Matthew J; Li, Juntao; Krauss, Thomas F; Eggleton, Benjamin J; Xiong, Chunle

    2014-06-15

    We demonstrate degenerate, correlated photon-pair generation via slow-light-enhanced spontaneous four-wave mixing in a 96 μm long silicon photonic crystal waveguide. Our device represents a more than 50 times smaller footprint than silicon nanowires. We have achieved a coincidence-to-accidental ratio as high as 47 at a photon generation rate of 0.001 pairs per pulse and 14 at a photon generation rate of 0.023 pairs per pulse, which are both higher than the useful level of 10. This demonstration provides a path to generate indistinguishable photons in an ultracompact platform for future quantum photonic technologies.

  13. Calibration of single-photon detectors using quantum statistics

    SciTech Connect

    Mogilevtsev, D.

    2010-08-15

    I show that calibration of the single-photon detector can be performed without knowledge of the signal parameters. Only partial information about the state statistics is sufficient for that. If one knows that the state is the squeezed one or the squeezed one mixed with the incoherent radiation, one can infer both the parameters of the state and the efficiency of the detector. For that one needs only to measure on/off statistics of detector clicks for the number of known absorbers placed before the detector. Thus, I suggest a scheme that performs a tomography of the signal and the measuring apparatus simultaneously.

  14. High-extinction ratio integrated photonic filters for silicon quantum photonics.

    PubMed

    Piekarek, Mateusz; Bonneau, Damien; Miki, Shigehito; Yamashita, Taro; Fujiwara, Mikio; Sasaki, Masahide; Terai, Hirotaka; Tanner, Michael G; Natarajan, Chandra M; Hadfield, Robert H; O'Brien, Jeremy L; Thompson, Mark G

    2017-02-15

    We present the generation of quantum-correlated photon pairs and subsequent pump rejection across two silicon-on-insulator photonic integrated circuits. Incoherently cascaded lattice filters are used to provide over 100 dB pass-band to stop-band contrast with no additional external filtering. Photon pairs generated in a microring resonator are successfully separated from the input pump, confirmed by temporal correlations measurements.

  15. A large area, silicon photomultiplier-based PET detector module.

    PubMed

    Raylman, Rr; Stolin, A; Majewski, S; Proffitt, J

    2014-01-21

    The introduction of silicon photomultipliers (SiPM) has facilitated construction of compact, efficient and magnetic field-hardened positron emission tomography (PET) scanners. To take full advantage of these devices, methods for using them to produce large field-of-view PET scanners are needed. In this investigation, we explored techniques to combine two SiPM arrays to form the building block for a small animal PET scanner. The module consists of a 26 × 58 array of 1.5 × 1.5mm(2) LYSO elements (spanning 41 × 91mm(2)) coupled to two SensL SiPM arrays. The SiPMs were read out with new multiplexing electronics developed for this project. To facilitate calculation of event position with multiple SiPM arrays it was necessary to spread scintillation light amongst a number of elements with a small light guide. This method was successful in permitting identification of all detector elements, even at the seam between two SiPM arrays. Since the performance of SiPMs is enhanced by cooling, the detector module was fitted with a cooling jacket, which allowed the temperature of the device and electronics to be controlled. Testing demonstrated that the peak-to-valley contrast ratio of the light detected from the scintillation array was increased by ∼45% when the temperature was reduced from 28 °C to 16 °C. Energy resolution for 511 keV photons improved slightly from 18.8% at 28 °C to 17.8% at 16 °C. Finally, the coincidence timing resolution of the module was found to be insufficient for time-of-flight applications (∼2100 ps at 14 °C). The first use of these new modules will be in the construction of a small animal PET scanner to be integrated with a 3T clinical magnetic resonance imaging scanner.

  16. Target molecules detection by waveguiding in a photonic silicon membrane

    DOEpatents

    Letant, Sonia E.; Van Buuren, Anthony; Terminello, Louis; Hart, Bradley R.

    2006-12-26

    Disclosed herein is a porous silicon filter capable of binding and detecting biological and chemical target molecules in liquid or gas samples. A photonic waveguiding silicon filter with chemical and/or biological anchors covalently attached to the pore walls bind target molecules. The system uses transmission curve engineering principles to allow measurements to be made in situ and in real time to detect the presence of various target molecules and calculate the concentration of bound target.

  17. A Photon Interference Detector with Continuous Display.

    ERIC Educational Resources Information Center

    Gilmore, R. S.

    1978-01-01

    Describes an apparatus which attempts to give a direct visual impression of the random detection of individual photons coupled with the recognition of the classical intensity distribution as a result of fairly high proton statistics. (Author/GA)

  18. Silicon Photonics with Applications to Data Center Networks

    NASA Astrophysics Data System (ADS)

    Aguinaldo, Ryan Francis

    In data center applications, fiber-based optical interconnects can be used to provide point-to-point links enabling high-bandwidth, inter-rack, data communications. In order to provide for future network scalability, which must be able to handle ultra-large data flows and bandwidth-intensive requests, optical technologies are increasingly introduced to different levels of the data center architecture to enable a variety of transparent network or all-optical networking schemes. However, the use of bulk optical components, which take up valuable rack-space real estate, can be extremely energy and cost prohibitive, especially when scaled up to the size of industrial warehouse-scale computing and considering that predictions of future data center networks are expected to contain millions of nodes. As such, we study chip-scale, silicon photonic, integrated circuits and their use as the optical hardware in future data center implementations. This work describes aspects of the design and integration of silicon photonic devices, which can be used for high-bandwidth, multi-channel, wavelength division multiplexed, optical communications. Examples of silicon photonic subsystems are discussed, including the realization of an on-chip channelized spectrum monitor and a network-node-on-a-chip. These optical integrated circuits are meant to replace bulk optical components with their functional equivalents on monolithic silicon. This work demonstrates that silicon photonics may be advantageous in meeting the urgent hardware-scaling demands of high-bandwidth, multi-user, communication networks.

  19. High-Q silicon carbide photonic-crystal cavities

    SciTech Connect

    Lee, Jonathan Y.; Lu, Xiyuan; Lin, Qiang

    2015-01-26

    We demonstrate one-dimensional photonic-crystal nanobeam cavities in amorphous silicon carbide. The fundamental mode exhibits intrinsic optical quality factor as high as 7.69 × 10{sup 4} with mode volume ∼0.60(λ/n){sup 3} at wavelength 1.5 μm. A corresponding Purcell factor value of ∼10{sup 4} is the highest reported to date in silicon carbide optical cavities. The device exhibits great potential for integrated nonlinear photonics and cavity nano-optomechanics.

  20. Generation of correlated photons in nanoscale silicon waveguides

    NASA Astrophysics Data System (ADS)

    Sharping, Jay E.; Lee, Kim F.; Foster, Mark A.; Turner, Amy C.; Schmidt, Bradley S.; Lipson, Michal; Gaeta, Alexander L.; Kumar, Prem

    2006-12-01

    .We experimentally study the generation of correlated pairs of photons through four-wave mixing (FWM) in embedded silicon waveguides. The waveguides, which are designed to exhibit anomalous group-velocity dispersion at wavelengths near 1555 nm, allow phase matched FWM and thus efficient pair-wise generation of non-degenerate signal and idler photons. Photon counting measurements yield a coincidence-to-accidental ratio (CAR) of around 25 for a signal (idler) photon production rate of about 0.05 per pulse. We characterize the variation in CAR as a function of pump power and pump-to-sideband wavelength detuning. These measurements represent a first step towards the development of tools for quantum information processing which are based on CMOS-compatible, silicon-on-insulator technology.

  1. Phase-sensitive amplification in silicon photonic crystal waveguides.

    PubMed

    Zhang, Yanbing; Husko, Chad; Schröder, Jochen; Lefrancois, Simon; Rey, Isabella H; Krauss, Thomas F; Eggleton, Benjamin J

    2014-01-15

    We experimentally demonstrate phase-sensitive amplification in a silicon photonic crystal waveguide based on pump-degenerate four-wave mixing. An 11 dB phase-extinction ratio is obtained in a record compact 196 μm nanophotonic device due to broadband slow light, in spite of the presence of two-photon absorption and free carriers. Numerical calculations show good agreement with the experimental results.

  2. Hybrid Silicon Photonic Integration using Quantum Well Intermixing

    NASA Astrophysics Data System (ADS)

    Jain, Siddharth R.

    With the push for faster data transfer across all domains of telecommunication, optical interconnects are transitioning into shorter range applications such as in data centers and personal computing. Silicon photonics, with its economic advantages of leveraging well-established silicon manufacturing facilities, is considered the most promising approach to further scale down the cost and size of optical interconnects for chip-to-chip communication. Intrinsic properties of silicon however limit its ability to generate and modulate light, both of which are key to realizing on-chip optical data transfer. The hybrid silicon approach directly addresses this problem by using molecularly bonded III-V epitaxial layers on silicon for optical gain and absorption. This technology includes direct transfer of III-V wafer to a pre-patterned silicon-on-insulator wafer. Several discrete devices for light generation, modulation, amplification and detection have already been demonstrated on this platform. As in the case of electronics, multiple photonic elements can be integrated on a single chip to improve performance and functionality. However, scalable photonic integration requires the ability to control the bandgap for individual devices along with design changes to simplify fabrication. In the research presented here, quantum well intermixing is used as a technique to define multiple bandgaps for integration on the hybrid silicon platform. Implantation enhanced disordering is used to generate four bandgaps spread over 120+ nm. By combining these selectively intermixed III-V layers with pre-defined gratings and waveguides on silicon, we fabricate distributed feedback, distributed Bragg reflector, Fabry-Perot and mode-locked lasers along with photodetectors, electro-absorption modulators and other test structures, all on a single chip. We demonstrate a broadband laser source with continuous-wave operational lasers over a 200 nm bandwidth. Some of these lasers are integrated with

  3. Low noise electronics for the CLEO III silicon detector

    NASA Astrophysics Data System (ADS)

    Kagan, H.; Alexander, J.; Bean, A.; Bebek, C.; Brandenburg, G.; Darling, C.; Duboscq, J.; Fast, J.; Foland, A.; Gan, K. K.; Hopman, P.; Kass, R.; Kim, P.; Menon, N.; Miller, D.; Nemati, B.; Oliver, J.; Rush, C.; Shipsey, I.; Skubic, P.; Spencer, M. B.; Uhl, C.; Ward, C.; Wilson, R.; Yurko, M.; Zoeller, M. M.

    1996-02-01

    We report here the status of the CLEO III silicon vertex detector electronics. The CLEO III silicon detector is a 4-layer barrel-style device which spans 93% of the solid angle observing the interaction region. All layers will be constructed with double-sided silicon. The innermost layer must be able to handle large singles rates associated with a detector situated near the interaction region. In order to cover the required solid angle, the outermost layer is 55 cm long and presents a large capacitive load to the front-end electronics. The electronics chain chosen to meet this challenge consists of a low noise cascode preamplifier followed by an ADC on each channel. The system issues will be described herein together with the chosen solutions, noise performance of each subsystem prototype, and expected results of the full system.

  4. A novel pixellated solid-state photon detector for enhancing the Everhart-Thornley detector.

    PubMed

    Chuah, Joon Huang; Holburn, David

    2013-06-01

    This article presents a pixellated solid-state photon detector designed specifically to improve certain aspects of the existing Everhart-Thornley detector. The photon detector was constructed and fabricated in an Austriamicrosystems 0.35 µm complementary metal-oxide-semiconductor process technology. This integrated circuit consists of an array of high-responsivity photodiodes coupled to corresponding low-noise transimpedance amplifiers, a selector-combiner circuit and a variable-gain postamplifier. Simulated and experimental results show that the photon detector can achieve a maximum transimpedance gain of 170 dBΩ and minimum bandwidth of 3.6 MHz. It is able to detect signals with optical power as low as 10 nW and produces a minimum signal-to-noise ratio (SNR) of 24 dB regardless of gain configuration. The detector has been proven to be able to effectively select and combine signals from different pixels. The key advantages of this detector are smaller dimensions, higher cost effectiveness, lower voltage and power requirements and better integration. The photon detector supports pixel-selection configurability which may improve overall SNR and also potentially generate images for different analyses. This work has contributed to the future research of system-level integration of a pixellated solid-state detector for secondary electron detection in the scanning electron microscope.

  5. Photon-number-resolving detector with 10 bits of resolution

    SciTech Connect

    Jiang, Leaf A.; Dauler, Eric A.; Chang, Joshua T

    2007-06-15

    A photon-number-resolving detector with single-photon resolution is described and demonstrated. It has 10 bits of resolution, does not require cryogenic cooling, and is sensitive to near ir wavelengths. This performance is achieved by flood illuminating a 32x32 element In{sub x}Ga{sub 1-x}AsP Geiger-mode avalanche photodiode array that has an integrated counter and digital readout circuit behind each pixel.

  6. Photon Detector For Inverse Photoemission Spectroscopy With Improved Energy Resolution

    SciTech Connect

    Maniraj, M.; D'Souza, S. W.; Barman, S. R.

    2011-07-15

    We present the results from newly designed and fabricated double window photon detector to improve the overall energy resolution for inverse photoemission spectroscopy (IPES). This simple design allows us to introduce an absorption gas (Krypton) to decrease the band-width of the energy selective photon detector and thus improve the resolution. Resonance absorption line of Kr of wavelength of 123.6 nm was used. By fitting the Fermi edge of the IPES spectrum of silver, we find an overall energy resolution improved by 73 meV. The design is modular and ensures ease and safety of handling.

  7. Recent advances in high-speed photon detectors

    NASA Astrophysics Data System (ADS)

    Leskovar, B.

    1982-12-01

    Recent progress of some fast high-gain photon detectors using photoemission and secondary emission processes is reviewed and summarized. Specifically, performance characteristics are presented, of the new Amperex XP 2020, RCA 8854, and Hamamatsu R 647-01 conventionally design photomultipliers. Also, characteristics are presented of the ITT F 4129 and Hamamatsu R 1564U extended lifetime microchannel plate photomultipliers as well as certain special made photomultipliers intended for application in positron emission tomography, high energy physics and plasma diagnostic experimental systems. Finally, microchannel plates as photon detectors for ultraviolet and X-ray wavelengths are discussed.

  8. On-chip generation and demultiplexing of quantum correlated photons using a silicon-silica monolithic photonic integration platform.

    PubMed

    Matsuda, Nobuyuki; Karkus, Peter; Nishi, Hidetaka; Tsuchizawa, Tai; Munro, William J; Takesue, Hiroki; Yamada, Koji

    2014-09-22

    We demonstrate the generation and demultiplexing of quantum correlated photons on a monolithic photonic chip composed of silicon and silica-based waveguides. Photon pairs generated in a nonlinear silicon waveguide are successfully separated into two optical channels of an arrayed-waveguide grating fabricated on a silica-based waveguide platform.

  9. Photon counting detectors for Fabry-Perot interferometers

    NASA Technical Reports Server (NTRS)

    Darlington, E. H.; Haviland, J. R.

    1989-01-01

    Sealed channel plate photomultipliers with multiple discrete anodes for use as photon counting detectors in the image plane of Fabry-Perot interferometers are described. The influence of design and construction on performance of completed devices is discussed. Effects on spatial resolution, lifetime, and counting efficiency are described. It is shown that devices can be optimized for particular applications. The results should be generally applicable to resistive anode and wedge and strip anode types of sealed detectors.

  10. A Photon Counting Imaging Detector for NASA Exoplanet Mission

    NASA Astrophysics Data System (ADS)

    Figer, Donald

    The key objective of the proposed project is to advance the maturity of a 256x256 pixel single-photon optical imaging detector. The detector has zero read noise and is resilient against the harsh effects of radiation in space. We expect that the device will have state-of-the-art performance in other parameters, e.g., high quantum efficiency from UV to 1 #m, low dark current, etc.

  11. High-energy neutron spectroscopy with thick silicon detectors

    NASA Technical Reports Server (NTRS)

    Kinnison, James D.; Maurer, Richard H.; Roth, David R.; Haight, Robert C.

    2003-01-01

    The high-energy neutron component of the space radiation environment in thick structures such as the International Space Station contributes to the total radiation dose received by an astronaut. Detector design constraints such as size and mass have limited the energy range of neutron spectrum measurements in orbit to about 12 MeV in Space Shuttle studies. We present a new method for high-energy neutron spectroscopy using small silicon detectors that can extend these measurements to more than 500 MeV. The methodology is based on measurement of the detector response function for high-energy neutrons and inversion of this response function with measured deposition data to deduce neutron energy spectra. We also present the results of an initial shielding study performed with the thick silicon detector system for high-energy neutrons incident on polyethylene.

  12. Noise performance of the D0 layer 0 silicon detector

    NASA Astrophysics Data System (ADS)

    Johnson, M.; D0 Collaboration

    2007-09-01

    A new inner detector called Layer 0 has been added to the existing silicon detector for the DZero colliding beams experiment [V.M. Abazoz et al., Nucl. Instr. and Meth. A 565 (2006) 463]. This detector has an all carbon fiber support structure that employs thin copper clad Kapton sheets embedded in the surface of the carbon fiber structure to improve the grounding of the structure and a readout system that fully isolates the local detector ground from the rest of the detector. Initial measurements show efficiencies greater than 90% and 0.3 ADC count (240 e) common mode contribution to the signal noise. The total detector capacitance is 24 pF so this corresponds to 2 μV of common mode voltage.

  13. Performance evaluation of a very high resolution small animal PET imager using silicon scatter detectors

    NASA Astrophysics Data System (ADS)

    Park, Sang-June; Rogers, W. Leslie; Huh, Sam; Kagan, Harris; Honscheid, Klaus; Burdette, Don; Chesi, Enrico; Lacasta, Carlos; Llosa, Gabriela; Mikuz, Marko; Studen, Andrej; Weilhammer, Peter; Clinthorne, Neal H.

    2007-05-01

    A very high resolution positron emission tomography (PET) scanner for small animal imaging based on the idea of inserting a ring of high-granularity solid-state detectors into a conventional PET scanner is under investigation. A particularly interesting configuration of this concept, which takes the form of a degenerate Compton camera, is shown capable of providing sub-millimeter resolution with good sensitivity. We present a Compton PET system and estimate its performance using a proof-of-concept prototype. A prototype single-slice imaging instrument was constructed with two silicon detectors 1 mm thick, each having 512 1.4 mm × 1.4 mm pads arranged in a 32 × 16 array. The silicon detectors were located edgewise on opposite sides and flanked by two non-position sensitive BGO detectors. The scanner performance was measured for its sensitivity, energy, timing, spatial resolution and resolution uniformity. Using the experimental scanner, energy resolution for the silicon detectors is 1%. However, system energy resolution is dominated by the 23% FWHM BGO resolution. Timing resolution for silicon is 82.1 ns FWHM due to time-walk in trigger devices. Using the scattered photons, time resolution between the BGO detectors is 19.4 ns FWHM. Image resolution of 980 µm FWHM at the center of the field-of-view (FOV) is obtained from a 1D profile of a 0.254 mm diameter 18F line source image reconstructed using the conventional 2D filtered back-projection (FBP). The 0.4 mm gap between two line sources is resolved in the image reconstructed with both FBP and the maximum likelihood expectation maximization (ML-EM) algorithm. The experimental instrument demonstrates sub-millimeter resolution. A prototype having sensitivity high enough for initial small animal images can be used for in vivo studies of small animal models of metabolism, molecular mechanism and the development of new radiotracers.

  14. A prototype of very high resolution small animal PET scanner using silicon pad detectors

    PubMed Central

    Park, Sang-June; Leslie Rogers, W.; Huh, Sam; Kagan, Harris; Honscheid, Klaus; Burdette, Don; Chesi, Enrico; Lacasta, Carlos; Llosa, Gabriela; Mikuz, Marko; Studen, Andrej; Weilhammer, Peter; Clinthorne, Neal H.

    2007-01-01

    A very high resolution small animal positron emission tomograph (PET) which can achieve sub-millimeter spatial resolution is being developed using silicon pad detectors. The prototype PET for a single slice instrument consists of two 1 mm thick silicon pad detectors, each containing a 32 × 16 array of 1.4 mm × 1.4 mm pads read out with four VATAGP3 chips which have 128 channels low-noise self triggering ASIC in each chip, coincidence units, a source turntable and tungsten slice collimator. The silicon detectors were located edgewise on opposite sides of a 4 cm field-of-view to maximize efficiency. Energy resolution is dominated by electronic noise, which is 0.98% (1.38 keV) FWHM at 140.5 keV. Coincidence timing resolution is 82.1 ns FWHM and coincidence efficiency was measured to be 1.04 × 10-3 % from two silicon detectors with annihilation photons of 18F source Image data were acquired and reconstructed using conventional 2-D filtered-back projection (FBP) and a maximum likelihood expectation maximization (ML-EM) method. Image resolution of approximately 1.45 mm FWHM is obtained from 1-D profile of 1.1 mm diameter 18F line source image. Even better resolution can be obtained with smaller detector element sizes. While many challenges remain in scaling up the instrument to useful efficiency including densely packed detectors and significantly improved timing resolution, performance of the test setup in terms of easily achieving submillimeter resolution is compelling. PMID:18084629

  15. CMOS compatible high-Q photonic crystal nanocavity fabricated with photolithography on silicon photonic platform.

    PubMed

    Ooka, Yuta; Tetsumoto, Tomohiro; Fushimi, Akihiro; Yoshiki, Wataru; Tanabe, Takasumi

    2015-06-18

    Progress on the fabrication of ultrahigh-Q photonic-crystal nanocavities (PhC-NCs) has revealed the prospect for new applications including silicon Raman lasers that require a strong confinement of light. Among various PhC-NCs, the highest Q has been recorded with silicon. On the other hand, microcavity is one of the basic building blocks in silicon photonics. However, the fusion between PhC-NCs and silicon photonics has yet to be exploited, since PhC-NCs are usually fabricated with electron-beam lithography and require an air-bridge structure. Here we show that a 2D-PhC-NC fabricated with deep-UV photolithography on a silica-clad silicon-on-insulator (SOI) structure will exhibit a high-Q of 2.2 × 10(5) with a mode-volume of ~ 1.7(λ/n)(3). This is the highest Q demonstrated with photolithography. We also show that this device exhibits an efficient thermal diffusion and enables high-speed switching. The demonstration of the photolithographic fabrication of high-Q silica-clad PhC-NCs will open possibility for mass-manufacturing and boost the fusion between silicon photonics and CMOS devices.

  16. Scaling silicon photonic switch fabrics for data center interconnection networks.

    PubMed

    Nikolova, Dessislava; Rumley, Sébastien; Calhoun, David; Li, Qi; Hendry, Robert; Samadi, Payman; Bergman, Keren

    2015-01-26

    With the rapidly increasing aggregate bandwidth requirements of data centers there is a growing interest in the insertion of optically interconnected networks with high-radix transparent optical switch fabrics. Silicon photonics is a particularly promising and applicable technology due to its small footprint, CMOS compatibility, high bandwidth density, and the potential for nanosecond scale dynamic connectivity. In this paper we analyze the feasibility of building silicon photonic microring based switch fabrics for data center scale optical interconnection networks. We evaluate the scalability of a microring based switch fabric for WDM signals. Critical parameters including crosstalk, insertion loss and switching speed are analyzed, and their sensitivity with respect to device parameters is examined. We show that optimization of physical layer parameters can reduce crosstalk and increase switch fabric scalability. Our analysis indicates that with current state-of-the-art devices, a high radix 128 × 128 silicon photonic single chip switch fabric with tolerable power penalty is feasible. The applicability of silicon photonic microrings for data center switching is further supported via review of microring operations and control demonstrations. The challenges and opportunities for this technology platform are discussed.

  17. Low dose radiation damage effects in silicon strip detectors

    NASA Astrophysics Data System (ADS)

    Wiącek, P.; Dąbrowski, W.

    2016-11-01

    The radiation damage effects in silicon segmented detectors caused by X-rays have become recently an important research topic driven mainly by development of new detectors for applications at the European X-ray Free Electron Laser (E-XFEL). However, radiation damage in silicon strip is observed not only after extreme doses up to 1 GGy expected at E-XFEL, but also at doses in the range of tens of Gy, to which the detectors in laboratory instruments like X-ray diffractometers or X-ray spectrometers can be exposed. In this paper we report on investigation of radiation damage effects in a custom developed silicon strip detector used in laboratory diffractometers equipped with X-ray tubes. Our results show that significant degradation of detector performance occurs at low doses, well below 200 Gy, which can be reached during normal operation of laboratory instruments. Degradation of the detector energy resolution can be explained by increasing leakage current and increasing interstrip capacitance of the sensor. Another observed effect caused by accumulation of charge trapped in the surface oxide layer is change of charge division between adjacent strips. In addition, we have observed unexpected anomalies in the annealing process.

  18. EMC Diagnosis and Corrective Actions for Silicon Strip Tracker Detectors

    SciTech Connect

    Arteche, F.; Rivetta, C.; /SLAC

    2006-06-06

    The tracker sub-system is one of the five sub-detectors of the Compact Muon Solenoid (CMS) experiment under construction at CERN for the Large Hadron Collider (LHC) accelerator. The tracker subdetector is designed to reconstruct tracks of charged sub-atomic particles generated after collisions. The tracker system processes analogue signals from 10 million channels distributed across 14000 silicon micro-strip detectors. It is designed to process signals of a few nA and digitize them at 40 MHz. The overall sub-detector is embedded in a high particle radiation environment and a magnetic field of 4 Tesla. The evaluation of the electromagnetic immunity of the system is very important to optimize the performance of the tracker sub-detector and the whole CMS experiment. This paper presents the EMC diagnosis of the CMS silicon tracker sub-detector. Immunity tests were performed using the final prototype of the Silicon Tracker End-Caps (TEC) system to estimate the sensitivity of the system to conducted noise, evaluate the weakest areas of the system and take corrective actions before the integration of the overall detector. This paper shows the results of one of those tests, that is the measurement and analysis of the immunity to CM external conducted noise perturbations.

  19. Characterization of silicon detectors through TCT at Delhi University

    NASA Astrophysics Data System (ADS)

    Jain, G.; Lalwani, K.; Dalal, R.; Bhardwaj, A.; Ranjan, K.

    2016-07-01

    Transient Current Technique (TCT) is one of the important methods to characterize silicon detectors and is based on the time evolution of the charge carriers generated when a laser light is shone on it. For red laser, charge is injected only to a small distance from the surface of the detector. For such a system, one of the charge carriers is collected faster than the readout time of the electronics and therefore, the effective signal at the electrodes is decided by the charge carriers that traverse throughout the active volume of the detector, giving insight to the electric field profile, drift velocity, effective doping density, etc. of the detector. Delhi University is actively involved in the silicon detector R&D and has recently installed a TCT setup consisting of a red laser system, a Faraday cage, a SMU (Source Measuring Unit), a bias tee, and an amplifier. Measurements on a few silicon pad detectors have been performed using the developed system, and the results have been found in good agreement with the CERN setup.

  20. Slow-light enhanced correlated photon pair generation in a silicon photonic crystal waveguide.

    PubMed

    Xiong, C; Monat, Christelle; Clark, Alex S; Grillet, Christian; Marshall, Graham D; Steel, M J; Li, Juntao; O'Faolain, Liam; Krauss, Thomas F; Rarity, John G; Eggleton, Benjamin J

    2011-09-01

    We report the generation of correlated photon pairs in the telecom C-band at room temperature from a dispersion-engineered silicon photonic crystal waveguide. The spontaneous four-wave mixing process producing the photon pairs is enhanced by slow-light propagation enabling an active device length of less than 100 μm. With a coincidence to accidental ratio of 12.8 at a pair generation rate of 0.006 per pulse, this ultracompact photon pair source paves the way toward scalable quantum information processing realized on-chip.

  1. Means and method for calibrating a photon detector utilizing electron-photon coincidence

    NASA Technical Reports Server (NTRS)

    Srivastava, S. K. (Inventor)

    1984-01-01

    An arrangement for calibrating a photon detector particularly applicable for the ultraviolet and vacuum ultraviolet regions is based on electron photon coincidence utilizing crossed electron beam atom beam collisions. Atoms are excited by electrons which lose a known amount of energy and scatter with a known remaining energy, while the excited atoms emit photons of known radiation. Electrons of the known remaining energy are separated from other electrons and are counted. Photons emitted in a direction related to the particular direction of scattered electrons are detected to serve as a standard. Each of the electrons is used to initiate the measurements of a time interval which terminates with the arrival of a photon exciting the photon detector. Only the number of time intervals related to the coincidence correlation and of electrons scattered in the particular direction with the known remaining energy and photons of a particular radiation level emitted due to the collisions of such scattered electrons are counted. The detector calibration is related to the number of counted electrons and photons.

  2. Aging and rejuvenation of a TMAE + methane multiwire photon detector

    SciTech Connect

    Korpar, S. |; Krizan, P.; Stanovnik, A. |; Staric, M.; Skrk, D.

    1999-06-01

    A UV sensitive multiwire photon detector has been tested as a possible candidate for the HERA-B RICH detector. The main obstacle to using such a TMAE+Methane filled gas detector in a high rate experiment appears to be rapid aging in the form of prohibitive loss of chamber gas gain. A special circuit has been designed for heating the anode wires in-situ with elevated currents, thus evaporating the polymer deposits. Heating almost completely recovers the initial gain, but this rejuvenation is unfortunately of short duration. Nevertheless, the cells exposed to periodic heat treatments have an average gain considerably higher than the non-heated cells.

  3. Silicon-photonics-based wideband radar beamforming: basic design

    NASA Astrophysics Data System (ADS)

    Fathpour, Sasan

    2010-01-01

    Proposed is silicon-photonics-based phased array antenna beamforming for high-resolution long-range radars with wide instantaneous radio frequency (rf) bandwidth. Specifically, the proposed silicon-photonics beamformer platform offers the potential for cost-effective monolithic chip-scale integration of photonic delay lines, 2×2 optical switches, variable optical attenuators, and optical amplifiers that form the base unit of a rf transmit/receive array signal processor. In effect, the proposed silicon-photonics devices empower the design of a powerful proposed photonic beamformer with one time-delay unit per antenna element. Device-level designs studies are shown that promise meeting the high-resolution radar mission-critical requirements via time delays of up to 2.5 ns, switching times of less than 100 ns, optical isolations as good as 50 dB, and optical gains of up to 6 dB. Longer delays are achieved off chip using optical fibers.

  4. The Silicon Detector (SiD) And Linear Collider Detector R&D in Asia And North America

    SciTech Connect

    Brau, J.E.; Breidenbach, M.; Fujii, Y.; /KEK, Tsukuba

    2005-08-11

    In Asia and North America research and development on a linear collider detector has followed complementary paths to that in Europe. Among the developments in the US has been the conception of a detector built around silicon tracking, which relies heavily on a pixel (CCD) vertex detector, and employs a silicon tungsten calorimeter. Since this detector is quite different from the TESLA detector, we describe it here, along with some of the sub-system specific R&D in these regions.

  5. Application of photon detectors in the VIP2 experiment to test the Pauli Exclusion Principle

    NASA Astrophysics Data System (ADS)

    Pichler, A.; Bartalucci, S.; Bazzi, M.; Bertolucci, S.; Berucci, C.; Bragadireanu, M.; Cargnelli, M.; Clozza, A.; Curceanu, C.; De Paolis, L.; Di Matteo, S.; D'Ufflzi, A.; Egger, J.-P.; Guaraldo, C.; Iliescu, M.; Ishiwatari, T.; Laubenstein, M.; Marton, J.; Milotti, E.; Pietreanu, D.; Piscicchia, K.; Ponta, T.; Sbardella, E.; Scordo, A.; Shi, H.; Sirghi, D.; Sirghi, F.; Sperandio, L.; Vazquez-Doce, O.; Widmann, E.; Zmeskal, J.

    2016-05-01

    The Pauli Exclusion Principle (PEP) was introduced by the austrian physicist Wolfgang Pauli in 1925. Since then, several experiments have checked its validity. From 2006 until 2010, the VIP (Violation of the Pauli Principle) experiment took data at the LNGS underground laboratory to test the PEP. This experiment looked for electronic 2p to Is transitions in copper, where 2 electrons are in the Is state before the transition happens. These transitions violate the PEP. The lack of detection of X-ray photons coming from these transitions resulted in a preliminary upper limit for the violation of the PEP of 4.7 × 10-29. Currently, the successor experiment VIP2 is under preparation. The main improvements are, on one side, the use of Silicon Drift Detectors (SDDs) as X-ray photon detectors. On the other side an active shielding is implemented, which consists of plastic scintillator bars read by Silicon Photomultipliers (SiPMs). The employment of these detectors will improve the upper limit for the violation of the PEP by around 2 orders of magnitude.

  6. The development of a silicon multiplicity detector system

    SciTech Connect

    Beuttenmuller, R.H.; Kraner, H.W.; Lissauer, D.; Makowiecki, D.; Polychronakos, V.; Radeka, V.; Sondericker, J.; Stephani, D.; Barrette, J.; Hall, J.; Mark, S.K.; Pruneau, C.A.; Wolfe, D.; Borenstein, S.R.

    1991-12-31

    The physics program and the design criteria for a Silicon Pad Detector at RHIC are reviewed. An end cap double sided readout detector configuration for RHIC is presented. Its performance as an on-line and off-line centrality tagging device is studied by means of simulations with Fritiof as the event generator. The results of an in-beam test of a prototype double-sided Si-detector are presented. Good signal-to-noise ratio are obtained with front junction and the resistive back side readout. Good separation between one and two minimum-ionizing particle signals is achieved.

  7. Tests of innovative photon detectors and integrated electronics for the large-area CLAS12 ring-imaging Cherenkov detector

    SciTech Connect

    Contalbrigo, Marco

    2015-07-01

    A large area ring-imaging Cherenkov detector has been designed to provide clean hadron identification capability in the momentum range from 3 GeV/c to 8 GeV/c for the CLAS12 experiments at the upgraded 12 GeV continuous electron beam accelerator facility of Jefferson Lab. Its aim is to study the 3D nucleon structure in the yet poorly explored valence region by deep-inelastic scattering, and to perform precision measurements in hadron spectroscopy. The adopted solution foresees a novel hybrid optics design based on an aerogel radiator, composite mirrors and a densely packed and highly segmented photon detector. Cherenkov light will either be imaged directly (forward tracks) or after two mirror reflections (large angle tracks). Extensive tests have been performed on Hamamatsu H8500 and novel flat multi-anode photomultipliers under development and on various types of silicon photomultipliers. A large scale prototype based on 28 H8500 MA-PMTs has been realized and tested with few GeV/c hadron beams at the T9 test-beam facility of CERN. In addition a small prototype was used to study the response of customized SiPM matrices within a temperature interval ranging from 25 down to –25 °C. The preliminary results of the individual photon detector tests and of the prototype performance at the test-beams are here reported.

  8. Research on high-speed single photon detector

    NASA Astrophysics Data System (ADS)

    Wang, Chao; Yang, Hao; Wang, Di; Ma, Haiqiang; Luo, Kaihong; Sun, Zhibin; Zhai, Guangjie

    2010-10-01

    Single-photon detector based on an InGaAs avalanche photodiode is one of hot research on the quantum photon, and is one of the key technologies on quantum communication and quantum image. It is widely used in applications as high sensitive photon spectrum, high speed optic measurement and so on. A suitable delay and comparator with latch function circuit are used to prevent positive and negative transient pulses from influencing the detection of true photon induced avalanches. A dead time modulation feedback control circuit decreases the after-pulse. Especially, ECL difference circuit is the key of high speed single photon detector. In addition, the detector uses the hot tube fan-cooling method. From the performance test, the lowest temperature reaches -62°C, the minimum gate pulse width is 2ns (Full-Width-Half-Max, FWHM) and the dark counter rate is 2.5×10-6 ns-1 with a detection rate of 10MHz when the quantum efficiency is more than 10%.

  9. Advanced Silicon Detectors for High Energy Astrophysics Missions

    NASA Technical Reports Server (NTRS)

    Ricker, George

    2005-01-01

    A viewgraph presentation on the development of silicon detectors for high energy astrophysics missions is presented. The topics include: 1) Background: Motivation for Event-Driven CCD; 2) Report of Grant Activity; 3) Packaged EDCCD; 4) Measured X-ray Energy Resolution of the Gen1 EDCCDs Operated in "Conventional Mode"; and 5) EDCCD Gen 1.5-Lot 1 Planning.

  10. A 16 x 16 element extrinsic silicon detector array

    NASA Technical Reports Server (NTRS)

    1981-01-01

    Two bismuth-doped silicon accumulation-mode charge-injection device (AMCID) infrared detector arrays are studied. The geometry and composition of the arrays, and a description of the cold and warm electronics components of the system are described. Instructions for setting up and operating the array system, plus results of a functional test, are included.

  11. Digital Images of Breast Biopsies using a Silicon Strip Detector

    SciTech Connect

    Montano, Luis M.; Diaz, Claudia C.; Leyva, Antonio; Cabal, Fatima

    2006-09-08

    In our study we have used a silicon strip detector to obtain digital images of some breast tissues with micro calcifications. Some of those images will be shown and we will discuss the perspectives of using this technique as an improvement of breast cancer diagnostics.

  12. High-performance silicon photonics technology for telecommunications applications.

    PubMed

    Yamada, Koji; Tsuchizawa, Tai; Nishi, Hidetaka; Kou, Rai; Hiraki, Tatsurou; Takeda, Kotaro; Fukuda, Hiroshi; Ishikawa, Yasuhiko; Wada, Kazumi; Yamamoto, Tsuyoshi

    2014-04-01

    By way of a brief review of Si photonics technology, we show that significant improvements in device performance are necessary for practical telecommunications applications. In order to improve device performance in Si photonics, we have developed a Si-Ge-silica monolithic integration platform, on which compact Si-Ge-based modulators/detectors and silica-based high-performance wavelength filters are monolithically integrated. The platform features low-temperature silica film deposition, which cannot damage Si-Ge-based active devices. Using this platform, we have developed various integrated photonic devices for broadband telecommunications applications.

  13. Heavy flavour physics at colliders with silicon strip vertex detectors

    NASA Astrophysics Data System (ADS)

    Schwarz, Andreas S.

    1994-03-01

    The physics of heavy flavours has played a dominant role in high energy physics research ever since the discovery of charm in 1974, followed by the τ lepton in 1975 and bottom in 1977. With the startup of the large experiments at the e+e- colliders LEP and the SLC a new type of detector system has now come into operation which has a major impact on the studies of heavy flavours: the silicon strip vertex detector. The basic design priciples of these novel detector systems are outlined and three representative experimental realizations are discussed. The impact of these detectors on the studies of the properties of heavy flavours is just emerging and focuses on the measurement of lifetimes and the tagging of the presence of heavy flavour hadrons in hadronic events. The tools that are being developed for these studies are described as well as details of representative analyses. The potential of these devices and the associated technological developments that were necessary for their application in the colding beam environment is reflected in a plethora of new proposals to build sophisticated silicon detector systems for a large variety of future high energy physics applications. Two examples will be briefly sketched, a vertex detector for an asymmetric e+e- bottom factory and a large scale tracking system for a multipurpose detector at one of the new large hadron colliders.

  14. Porous Silicon-Based Quantum Dot Broad Spectrum Radiation Detector

    PubMed Central

    Urdaneta, M.; Stepanov, P.; Weinberg, I. N.; Pala, I. R.; Brock, S.

    2013-01-01

    Silicon is a convenient and inexpensive platform for radiation detection, but has low stopping power for x-rays and gamma-rays with high energy (e.g., 100 keV, as used in computed tomography and digital radiography, or 1 MeV, as desired for detection of nuclear materials). We have effectively increased the stopping power of silicon detectors by producing a layer of porous or micro-machined silicon, and infusing this layer with semiconductor quantum dots made of electron-dense materials. Results of prototype detectors show sensitivity to infrared, visible light, and x-rays, with dark current of less than 1 nA/mm2. PMID:24432047

  15. Multiple photon excited SF6 interaction with silicon surfaces

    NASA Astrophysics Data System (ADS)

    Chuang, T. J.

    1981-01-01

    Infrared laser induced SF6-silicon interactions have been studied and the surface reaction yields have been determined as a function of the laser frequency, the laser intensity, and the gas pressure in both perpendicular and parallel beam incidences on the solid surfaces. The results clearly show that vibrationally excited SF6 molecules promoted by CO2 laser pulses are very reactive to silicon, particularly when the solid is simultaneously exposed to the intense ir radiation. The laser excitation of the Si substrate alone cannot cause the heterogeneous reaction to occur. The present gas-solid system thus provides an example which clearly establishes the direct correlation between surface reactivity and vibrational activation. Additional experimental measurements also demonstrate that the thermal fluorine atoms generated by SF6 multiple photon dissociation at high laser intensities can react with silicon to form volatile product. The study thus provides further insight into the silicon-fluorine reaction dynamics.

  16. Silicon detectors for combined MR-PET and MR-SPECT imaging

    NASA Astrophysics Data System (ADS)

    Studen, A.; Brzezinski, K.; Chesi, E.; Cindro, V.; Clinthorne, N. H.; Cochran, E.; Grošičar, B.; Grkovski, M.; Honscheid, K.; Kagan, H.; Lacasta, C.; Llosa, G.; Mikuž, M.; Stankova, V.; Weilhammer, P.; Žontar, D.

    2013-02-01

    Silicon based devices can extend PET-MR and SPECT-MR imaging to applications, where their advantages in performance outweigh benefits of high statistical counts. Silicon is in many ways an excellent detector material with numerous advantages, among others: excellent energy and spatial resolution, mature processing technology, large signal to noise ratio, relatively low price, availability, versatility and malleability. The signal in silicon is also immune to effects of magnetic field at the level normally used in MR devices. Tests in fields up to 7 T were performed in a study to determine effects of magnetic field on positron range in a silicon PET device. The curvature of positron tracks in direction perpendicular to the field's orientation shortens the distance between emission and annihilation point of the positron. The effect can be fully appreciated for a rotation of the sample for a fixed field direction, compressing range in all dimensions. A popular Ga-68 source was used showing a factor of 2 improvement in image noise compared to zero field operation. There was also a little increase in noise as the reconstructed resolution varied between 2.5 and 1.5 mm. A speculative applications can be recognized in both emission modalities, SPECT and PET. Compton camera is a subspecies of SPECT, where a silicon based scatter as a MR compatible part could inserted into the MR bore and the secondary detector could operate in less constrained environment away from the magnet. Introducing a Compton camera also relaxes requirements of the radiotracers used, extending the range of conceivable photon energies beyond 140.5 keV of the Tc-99m. In PET, one could exploit the compressed sub-millimeter range of positrons in the magnetic field. To exploit the advantage, detectors with spatial resolution commensurate to the effect must be used with silicon being an excellent candidate. Measurements performed outside of the MR achieving spatial resolution below 1 mm are reported.

  17. An all-silicon single-photon source by unconventional photon blockade

    NASA Astrophysics Data System (ADS)

    Flayac, Hugo; Gerace, Dario; Savona, Vincenzo

    2015-06-01

    The lack of suitable quantum emitters in silicon and silicon-based materials has prevented the realization of room temperature, compact, stable, and integrated sources of single photons in a scalable on-chip architecture, so far. Current approaches rely on exploiting the enhanced optical nonlinearity of silicon through light confinement or slow-light propagation, and are based on parametric processes that typically require substantial input energy and spatial footprint to reach a reasonable output yield. Here we propose an alternative all-silicon device that employs a different paradigm, namely the interplay between quantum interference and the third-order intrinsic nonlinearity in a system of two coupled optical cavities. This unconventional photon blockade allows to produce antibunched radiation at extremely low input powers. We demonstrate a reliable protocol to operate this mechanism under pulsed optical excitation, as required for device applications, thus implementing a true single-photon source. We finally propose a state-of-art implementation in a standard silicon-based photonic crystal integrated circuit that outperforms existing parametric devices either in input power or footprint area.

  18. An all-silicon single-photon source by unconventional photon blockade.

    PubMed

    Flayac, Hugo; Gerace, Dario; Savona, Vincenzo

    2015-06-10

    The lack of suitable quantum emitters in silicon and silicon-based materials has prevented the realization of room temperature, compact, stable, and integrated sources of single photons in a scalable on-chip architecture, so far. Current approaches rely on exploiting the enhanced optical nonlinearity of silicon through light confinement or slow-light propagation, and are based on parametric processes that typically require substantial input energy and spatial footprint to reach a reasonable output yield. Here we propose an alternative all-silicon device that employs a different paradigm, namely the interplay between quantum interference and the third-order intrinsic nonlinearity in a system of two coupled optical cavities. This unconventional photon blockade allows to produce antibunched radiation at extremely low input powers. We demonstrate a reliable protocol to operate this mechanism under pulsed optical excitation, as required for device applications, thus implementing a true single-photon source. We finally propose a state-of-art implementation in a standard silicon-based photonic crystal integrated circuit that outperforms existing parametric devices either in input power or footprint area.

  19. An all-silicon single-photon source by unconventional photon blockade

    PubMed Central

    Flayac, Hugo; Gerace, Dario; Savona, Vincenzo

    2015-01-01

    The lack of suitable quantum emitters in silicon and silicon-based materials has prevented the realization of room temperature, compact, stable, and integrated sources of single photons in a scalable on-chip architecture, so far. Current approaches rely on exploiting the enhanced optical nonlinearity of silicon through light confinement or slow-light propagation, and are based on parametric processes that typically require substantial input energy and spatial footprint to reach a reasonable output yield. Here we propose an alternative all-silicon device that employs a different paradigm, namely the interplay between quantum interference and the third-order intrinsic nonlinearity in a system of two coupled optical cavities. This unconventional photon blockade allows to produce antibunched radiation at extremely low input powers. We demonstrate a reliable protocol to operate this mechanism under pulsed optical excitation, as required for device applications, thus implementing a true single-photon source. We finally propose a state-of-art implementation in a standard silicon-based photonic crystal integrated circuit that outperforms existing parametric devices either in input power or footprint area. PMID:26061665

  20. Broadband terahertz imaging with highly sensitive silicon CMOS detectors.

    PubMed

    Schuster, Franz; Coquillat, Dominique; Videlier, Hadley; Sakowicz, Maciej; Teppe, Frédéric; Dussopt, Laurent; Giffard, Benoît; Skotnicki, Thomas; Knap, Wojciech

    2011-04-11

    This paper investigates terahertz detectors fabricated in a low-cost 130 nm silicon CMOS technology. We show that the detectors consisting of a nMOS field effect transistor as rectifying element and an integrated bow-tie coupling antenna achieve a record responsivity above 5 kV/W and a noise equivalent power below 10 pW/Hz(0.5) in the important atmospheric window around 300 GHz and at room temperature. We demonstrate furthermore that the same detectors are efficient for imaging in a very wide frequency range from ~0.27 THz up to 1.05 THz. These results pave the way towards high sensitivity focal plane arrays in silicon for terahertz imaging.

  1. Silicon pixel detector prototyping in SOI CMOS technology

    NASA Astrophysics Data System (ADS)

    Dasgupta, Roma; Bugiel, Szymon; Idzik, Marek; Kapusta, Piotr; Kucewicz, Wojciech; Turala, Michal

    2016-12-01

    The Silicon-On-Insulator (SOI) CMOS is one of the most advanced and promising technology for monolithic pixel detectors design. The insulator layer that is implemented inside the silicon crystal allows to integrate sensors matrix and readout electronic on a single wafer. Moreover, the separation of electronic and substrate increases also the SOI circuits performance. The parasitic capacitances to substrate are significantly reduced, so the electronic systems are faster and consume much less power. The authors of this presentation are the members of international SOIPIX collaboration, that is developing SOI pixel detectors in 200 nm Lapis Fully-Depleted, Low-Leakage SOI CMOS. This work shows a set of advantages of SOI technology and presents possibilities for pixel detector design SOI CMOS. In particular, the preliminary results of a Cracow chip are presented.

  2. A CMOS visible silicon imager hybridized to a Rockwell 2RG multiplexer as a new detector for ground based astronomy

    NASA Astrophysics Data System (ADS)

    Dorn, Reinhold J.; Eschbaumer, Siegfried; Finger, Gert; Mehrgan, Leander; Meyer, Manfred; Stegmeier, Joerg

    2006-06-01

    For the past 25 years Charge Coupled Devices (CCDs) have been used as the preferred detector for ground based astronomy to detect visible photons. As an alternative to CCDs, silicon-based hybrid CMOS focal plane array technology is evolving rapidly. Visible hybrid detectors have a close synergy with IR detectors and are operated in a similar way. This paper presents recent test results for a Rockwell 2K x 2K silicon PIN diode array hybridized to a Hawaii-2RG multiplexer, the Hybrid Visible Silicon Imager (HyViSI). Since the capacitance of the integrating node of Si-PIN diodes is at least a factor of two smaller than the capacitance of the Hawaii-2RG IR detector pixel, lower noise was expected. However, those detectors suffer from interpixel capacitance which introduces an error to the value of the conversion factor measured with the photon transfer method. Therefore QE values have been overestimated by almost a factor of two in the past. Detailed test results on QE, noise, dark current, and other basic performance values as well as a discussion how to interpret the measured values will be presented. Two alternative methods, direct measurement of the nodal capacity and the use of Iron-55 X-rays to determine the actual nodal capacitance and hence the conversion factor will be briefly presented. PSF performance of this detector was analyzed in detail with an optical spot and single pixel reset measurement.

  3. High-Q microresonators as lasing elements for silicon photonics

    NASA Astrophysics Data System (ADS)

    Borselli, Matthew

    Although the concept of constructing active optical waveguides in crystalline silicon has existed for over twenty years, it is only in the past few years that silicon photonics has been given serious attention as a, displacing technology. Fueled by the predicted saturation of "Moore's Law" within the next decade, universities and industries from all over the world are exploring the possibilities of creating truly integrated silicon opto-electronic devices in a cost effective manner. Some of the most promising silicon photonics technologies are chip-to-chip and intra-chip optical interconnects. Now that compact high-speed modulators in silicon have been achieved, the limiting factor in the widespread adoption of optical interconnects is the lack of practical on-chip optical sources. These sources are critical for the generation of the many wavelengths of light necessary for high-speed communication between the logical elements between and within microprocessors. Unfortunately, crystalline silicon is widely known as a poor emitter because of its indirect bandgap. This thesis focuses on the many challenges in generating silicon-based laser sources. As most CMOS compatible gain materials possess at most 1 dB/cm of gain, much of our work has been devoted to minimizing the optical losses in silicon optical microresonators. Silicon microdisk resonators fabricated from silicon-on-insulator wafers were employed to study and minimize the different sources of scattering and absorption present in high-index contrast Si microcavities. These microdisks supported whispering-gallery modes with quality factors as high as 5 x 106, close to the bulk limit of lightly doped silicon wafers. An external silica fiber taper probe was developed to test the microcavities in a rapid wafer-scale manner. Analytic theory and numerical simulation aided in the optimization of the cavity design and interpretation of experimental results. After successfully developing surface chemistry treatments

  4. Selective and reversible ammonia gas detection with nanoporous film functionalized silicon photonic micro-ring resonator.

    PubMed

    Yebo, Nebiyu A; Sree, Sreeprasanth Pulinthanathu; Levrau, Elisabeth; Detavernier, Christophe; Hens, Zeger; Martens, Johan A; Baets, Roel

    2012-05-21

    Portable, low cost and real-time gas sensors have a considerable potential in various biomedical and industrial applications. For such applications, nano-photonic gas sensors based on standard silicon fabrication technology offer attractive opportunities. Deposition of high surface area nano-porous coatings on silicon photonic sensors is a means to achieve selective, highly sensitive and multiplexed gas detection on an optical chip. Here we demonstrate selective and reversible ammonia gas detection with functionalized silicon-on-insulator optical micro-ring resonators. The micro-ring resonators are coated with acidic nano-porous aluminosilicate films for specific ammonia sensing, which results in a reversible response to NH(3)with selectivity relative to CO(2). The ammonia detection limit is estimated at about 5 ppm. The detectors reach a steady response to NH(3) within 30 and return to their base level within 60 to 90 seconds. The work opens perspectives on development of nano-photonic sensors for real-time, non-invasive, low cost and light weight biomedical and industrial sensing applications.

  5. Hydrogenated amorphous silicon photonic device trimming by UV-irradiation.

    PubMed

    Lipka, Timo; Kiepsch, Melanie; Trieu, Hoc Khiem; Müller, Jörg

    2014-05-19

    A method to compensate for fabrication tolerances and to fine-tune individual photonic circuit components is inevitable for wafer-scale photonic systems even with most-advanced CMOS-fabrication tools. We report a cost-effective and highly accurate method for the permanent trimming of hydrogenated amorphous silicon photonic devices by UV-irradiation. Microring resonators and Mach-Zehnder-interferometers were utilized as photonic test devices. The MZIs were tuned forth and back over their complete free spectral range of 5.5 nm by locally trimming the two MZI-arms. The trimming range exceeds 8 nm for compact ring resonators with trimming accuracies of 20 pm. Trimming speeds of ≥ 10 GHz/s were achieved. The components did not show any substantial device degradation.

  6. 14C autoradiography with an energy-sensitive silicon pixel detector.

    PubMed

    Esposito, M; Mettivier, G; Russo, P

    2011-04-07

    The first performance tests are presented of a carbon-14 ((14)C) beta-particle digital autoradiography system with an energy-sensitive hybrid silicon pixel detector based on the Timepix readout circuit. Timepix was developed by the Medipix2 Collaboration and it is similar to the photon-counting Medipix2 circuit, except for an added time-based synchronization logic which allows derivation of energy information from the time-over-threshold signal. This feature permits direct energy measurements in each pixel of the detector array. Timepix is bump-bonded to a 300 µm thick silicon detector with 256 × 256 pixels of 55 µm pitch. Since an energetic beta-particle could release its kinetic energy in more than one detector pixel as it slows down in the semiconductor detector, an off-line image analysis procedure was adopted in which the single-particle cluster of hit pixels is recognized; its total energy is calculated and the position of interaction on the detector surface is attributed to the centre of the charge cluster. Measurements reported are detector sensitivity, (4.11 ± 0.03) × 10(-3) cps mm(-2) kBq(-1) g, background level, (3.59 ± 0.01) × 10(-5) cps mm(-2), and minimum detectable activity, 0.0077 Bq. The spatial resolution is 76.9 µm full-width at half-maximum. These figures are compared with several digital imaging detectors for (14)C beta-particle digital autoradiography.

  7. Photon BLOCH oscillations in porous silicon optical superlattices.

    PubMed

    Agarwal, V; del Río, J A; Malpuech, G; Zamfirescu, M; Kavokin, A; Coquillat, D; Scalbert, D; Vladimirova, M; Gil, B

    2004-03-05

    We report the first observation of oscillations of the electromagnetic field in an optical superlattice based on porous silicon. These oscillations are an optical equivalent of well-known electronic Bloch oscillations in crystals. Elementary cells of our structure are composed by microcavities whose coupling gives rise to the extended collective modes forming optical minigaps and minibands. By varying thicknesses of the cavities along the structure axis, we have created an effective electric field for photons. A very high quality factor of the confined optical state of the Wannier-Stark ladder may allow lasing in porous silicon-based superlattices.

  8. Silicon-based silicon-germanium-tin heterostructure photonics.

    PubMed

    Soref, Richard

    2014-03-28

    The wavelength range that extends from 1550 to 5000 nm is a new regime of operation for Si-based photonic and opto-electronic integrated circuits. To actualize the new chips, heterostructure active devices employing the ternary SiGeSn alloy are proposed in this paper. Foundry-based monolithic integration is described. Opportunities and challenges abound in creating laser diodes, optical amplifiers, light-emitting diodes, photodetectors, modulators, switches and a host of high-performance passive infrared waveguided components.

  9. Silicon photonic crystal thermal emitter at near-infrared wavelengths.

    PubMed

    O'Regan, Bryan J; Wang, Yue; Krauss, Thomas F

    2015-08-21

    Controlling thermal emission with resonant photonic nanostructures has recently attracted much attention. Most of the work has concentrated on the mid-infrared wavelength range and/or was based on metallic nanostructures. Here, we demonstrate the experimental operation of a resonant thermal emitter operating in the near-infrared (≈1.5 μm) wavelength range. The emitter is based on a doped silicon photonic crystal consisting of a two dimensional square array of holes and using silicon-on-insulator technology with a device-layer thickness of 220 nm. The device is resistively heated by passing current through the photonic crystal membrane. At a temperature of ≈1100 K, we observe relatively sharp emission peaks with a Q factor around 18. A support structure system is implemented in order to achieve a large area suspended photonic crystal thermal emitter and electrical injection. The device demonstrates that weak absorption together with photonic resonances can be used as a wavelength-selection mechanism for thermal emitters, both for the enhancement and the suppression of emission.

  10. Test of an amorphous silicon detector in medical proton beams

    NASA Astrophysics Data System (ADS)

    Martišíková, M.; Hesse, B. M.; Nairz, O.; Jäkel, O.

    2011-05-01

    Ion beam radiation therapy for cancer treatment allows for improved dose confinement to the target in comparison with the standard radiation therapy using high energy photons. Dose delivery to the patient using focused ion beam scanning over the target volume is going to be increasingly used in the upcoming years. The high precision of the dose delivery achieved in this way has to be met by practical methods for beam monitoring with sufficient spatial resolution in two dimensions. Flat panel detectors, used for photon portal imaging at the newest medical linear accelerators, are an interesting candidate for this purpose. Initial detector tests presented here were performed using proton beams with the highest available energy. The investigations include measurements of beam profiles at different beam intensities and for different beam width, as well as the signal linearity. Radiation damage was also investigated. The obtained results show that the detector is a promising candidate to be used in the therapeutic proton beams.

  11. Fast photon detection for the COMPASS RICH detector

    NASA Astrophysics Data System (ADS)

    Abbon, P.; Alekseev, M.; Angerer, H.; Apollonio, M.; Birsa, R.; Bordalo, P.; Bradainante, F.; Bressan, A.; Busso, L.; Chiosso, M.; Ciliberti, P.; Colantoni, M. L.; Costa, S.; Dalla Torre, S.; Dafni, T.; Delagnes, E.; Deschamps, H.; Diaz, V.; Dibiase, N.; Duic, V.; Eyrich, W.; Faso, D.; Ferrero, A.; Finger, M.; Finger, M.; Fischer, H.; Gerassimov, S.; Giorgi, M.; Gobbo, B.; Hagemann, R.; von Harrach, D.; Heinsius, F. H.; Joosten, R.; Ketzer, B.; Königsmann, K.; Kolosov, V. N.; Konorov, I.; Kramer, D.; Kunne, F.; Lehmann, A.; Levorato, S.; Maggiora, A.; Magnon, A.; Mann, A.; Martin, A.; Menon, G.; Mutter, A.; Nähle, O.; Nerling, F.; Neyret, D.; Pagano, P.; Panebianco, S.; Panzieri, D.; Paul, S.; Pesaro, G.; Polak, J.; Rebourgeard, P.; Robinet, F.; Rocco, E.; Schiavon, P.; Schill, C.; Schröder, W.; Silva, L.; Slunecka, M.; Sozzi, F.; Steiger, L.; Sulc, M.; Svec, M.; Tessarotto, F.; Teufel, A.; Wollny, H.

    2007-10-01

    Particle identification at high rates is a central aspect of many present and future experiments in high-energy particle physics. The COMPASS experiment at the SPS accelerator at CERN uses a large scale Ring Imaging CHerenkov detector (RICH) to identify pions, kaons and protons in a wide momentum range. For the data taking in 2006, the COMPASS RICH has been upgraded in the central photon detection area (25% of the surface) with a new technology to detect Cherenkov photons at very high count rates of several 10s per channel and a new dead-time free read-out system, which allows trigger rates up to 100 kHz. The Cherenkov photons are detected by an array of 576 visible and ultra-violet sensitive multi-anode photomultipliers with 16 channels each. Lens telescopes of fused silica lenses have been designed and built to focus the Cherenkov photons onto the individual photomultipliers. The read-out electronics of the PMTs is based on the MAD4 amplifier-discriminator chip and the dead-time free high resolution F1-TDC. The 120 ps time resolution of the digital card guarantees negligible background from uncorrelated physical events. In the outer part of the detector, where the particle rates are lower, the present multi-wire proportional chambers (MWPC) with Cesium Iodide photo-cathodes have been upgraded with a new read-out electronic system based on the APV preamplifier and shaper ASIC with analog pipeline and sampling ADCs. The project was fully designed and implemented in the period November 2004 until May 2006. The upgraded detector showed an excellent performance during the 2006 data taking: the number of detected Cherenkov photons per ring was increased from 14 to above 60 at saturation. The time resolution was improved from about 3 microseconds to about one nanosecond which allows an excellent suppression of the background photons from uncorrelated events.

  12. Controlling the spectrum of photons generated on a silicon nanophotonic chip

    PubMed Central

    Kumar, Ranjeet; Ong, Jun Rong; Savanier, Marc; Mookherjea, Shayan

    2014-01-01

    Directly modulated semiconductor lasers are widely used, compact light sources in optical communications. Semiconductors can also be used to generate nonclassical light; in fact, CMOS-compatible silicon chips can be used to generate pairs of single photons at room temperature. Unlike the classical laser, the photon-pair source requires control over a two-dimensional joint spectral intensity (JSI) and it is not possible to process the photons separately, as this could destroy the entanglement. Here we design a photon-pair source, consisting of planar lightwave components fabricated using CMOS-compatible lithography in silicon, which has the capability to vary the JSI. By controlling either the optical pump wavelength, or the temperature of the chip, we demonstrate the ability to select different JSIs, with a large variation in the Schmidt number. Such control can benefit high-dimensional communications where detector-timing constraints can be relaxed by realizing a large Schmidt number in a small frequency range. PMID:25410792

  13. The response of a 300 micron silicon detector to monoenergetic neutrons determined by the use of the Monte Carlo technique

    NASA Technical Reports Server (NTRS)

    Tahezadeh, M.; Anno, G.

    1972-01-01

    The response of a 300 micron thick silicon detector to an incident monoenergetic neutron beam is evaluated by the Monte Carlo method for the cases of both a shielded and a bare detector. The result of Monte Carlo calculation, using elastic, inelastic, and absorption reactions indicates that the response of the silicon detector to neutrons is basically due to the elastic scattering. In addition, the gamma rays generated in the shield of the detector will result in a response which is 3 or 4 orders of magnitude smaller than response to incident photons. The response of a bare silicon detector is calculated for neutron energies up to 6 MeV and bias energies from 50 to 250 KeV. It is found that the maximum response for a 300 micron thick silicon detector is less than .004 c/n within this selected neutron and bias energy range. When the pulse height defect is introduced in the calculation the results at low energy neutrons were reduced.

  14. Simulation of Thick Gated Silicon Drift X-ray Detector Operated by a Single High-Voltage Source

    NASA Astrophysics Data System (ADS)

    Matsuura, Hideharu

    2013-02-01

    High-resolution X-ray detectors can be used to detect traces of hazardous or radioactive elements in food, soil, and the human body by measuring the energies and counts of emitted X-ray fluorescence photons. We have simulated the electric potential distributions in gated silicon drift detectors (GSDDs) with an active area of 18 mm2 and a Si thickness between 0.625 and 1.5 mm. A GSDD gate pattern was designed for each Si thickness and for various oxide charge densities in the SiO2 passivating layer near the SiO2/Si interface. The simulated GSDDs required approximately half the reverse bias voltage required by Si pin detectors. Our detector design could improve the absorption of Cd or Cs X-ray fluorescence photons and would reduce the cost of X-ray detection systems.

  15. Investigation of Hamamatsu H8500 phototubes as single photon detectors

    NASA Astrophysics Data System (ADS)

    Montgomery, R. A.; Hoek, M.; Lucherini, V.; Mirazita, M.; Orlandi, A.; Anefalos Pereira, S.; Pisano, S.; Rossi, P.; Viticchiè, A.; Witchger, A.

    2015-08-01

    We have investigated the response of a significant sample of Hamamatsu H8500 MultiAnode PhotoMultiplier Tubes (MAPMTs) as single photon detectors, in view of their use in a ring imaging Cherenkov counter for the CLAS12 spectrometer at the Thomas Jefferson National Accelerator Facility. For this, a laser working at 407.2 nm wavelength was employed. The sample is divided equally into standard window type, with a spectral response in the visible light region, and UV-enhanced window type MAPMTs. The studies confirm the suitability of these MAPMTs for single photon detection in such a Cherenkov imaging application.

  16. Detective quantum efficiency of photon-counting x-ray detectors

    SciTech Connect

    Tanguay, Jesse; Yun, Seungman; Kim, Ho Kyung; Cunningham, Ian A.

    2015-01-15

    Purpose: Single-photon-counting (SPC) x-ray imaging has the potential to improve image quality and enable novel energy-dependent imaging methods. Similar to conventional detectors, optimizing image SPC quality will require systems that produce the highest possible detective quantum efficiency (DQE). This paper builds on the cascaded-systems analysis (CSA) framework to develop a comprehensive description of the DQE of SPC detectors that implement adaptive binning. Methods: The DQE of SPC systems can be described using the CSA approach by propagating the probability density function (PDF) of the number of image-forming quanta through simple quantum processes. New relationships are developed to describe PDF transfer through serial and parallel cascades to accommodate scatter reabsorption. Results are applied to hypothetical silicon and selenium-based flat-panel SPC detectors including the effects of reabsorption of characteristic/scatter photons from photoelectric and Compton interactions, stochastic conversion of x-ray energy to secondary quanta, depth-dependent charge collection, and electronic noise. Results are compared with a Monte Carlo study. Results: Depth-dependent collection efficiency can result in substantial broadening of photopeaks that in turn may result in reduced DQE at lower x-ray energies (20–45 keV). Double-counting interaction events caused by reabsorption of characteristic/scatter photons may result in falsely inflated image signal-to-noise ratio and potential overestimation of the DQE. Conclusions: The CSA approach is extended to describe signal and noise propagation through photoelectric and Compton interactions in SPC detectors, including the effects of escape and reabsorption of emission/scatter photons. High-performance SPC systems can be achieved but only for certain combinations of secondary conversion gain, depth-dependent collection efficiency, electronic noise, and reabsorption characteristics.

  17. Feedback tolerance of DFB laser for silicon photonics packaging.

    PubMed

    Takeda, Seiji; Nakagawa, Shigeru

    2014-04-07

    Silicon photonics packaging without optical isolator is of significant importance to realize low fabrication cost and small device size. In this report, impact of external feedback on DFB laser performance is investigated both theoretically and experimentally. Dynamic transfer matrix method and rate equation model are coupled to describe the dynamic interaction between optical field and carriers in a DFB structure under the feedback by external reflection. The calculation model exhibits laser spectrum splits and output intensity fluctuates with increase of the degree of external feedback, in good agreement with experimental results. The theoretical analysis is performed under various feedback parameters, and the optimum packaging condition for DFB laser chip in silicon photonics is guided.

  18. Dry-film polymer waveguide for silicon photonics chip packaging.

    PubMed

    Hsu, Hsiang-Han; Nakagawa, Shigeru

    2014-09-22

    Polymer waveguide made by dry film process is demonstrated for silicon photonics chip packaging. With 8 μm × 11.5 μm core waveguide, little penalty is observed up to 25 Gbps before or after the light propagate through a 10-km long single-mode fiber (SMF). Coupling loss to SMF is 0.24 dB and 1.31 dB at the polymer waveguide input and output ends, respectively. Alignment tolerance for 0.5 dB loss increase is +/- 1.0 μm along both vertical and horizontal directions for the coupling from the polymer waveguide to SMF. The dry-film polymer waveguide demonstrates promising performance for silicon photonics chip packaging used in next generation optical multi-chip module.

  19. Dark matter detectors as dark photon helioscopes.

    PubMed

    An, Haipeng; Pospelov, Maxim; Pradler, Josef

    2013-07-26

    Light new particles with masses below 10 keV, often considered as a plausible extension of the standard model, will be emitted from the solar interior and can be detected on Earth with a variety of experimental tools. Here, we analyze the new "dark" vector state V, a massive vector boson mixed with the photon via an angle κ, that in the limit of the small mass mV has its emission spectrum strongly peaked at low energies. Thus, we utilize the constraints on the atomic ionization rate imposed by the results of the XENON10 experiment to set the limit on the parameters of this model: κ×mV<3×10(-12)  eV. This makes low-threshold dark matter experiments the most sensitive dark vector helioscopes, as our result not only improves current experimental bounds from other searches by several orders of magnitude but also surpasses even the most stringent astrophysical and cosmological limits in a seven-decade-wide interval of mV. We generalize this approach to other light exotic particles and set the most stringent direct constraints on "minicharged" particles.

  20. Laser Integration on Silicon Photonic Circuits Through Transfer Printing

    DTIC Science & Technology

    2017-03-10

    AFRL-AFOSR-UK-TR-2017-0019 Laser integration on silicon photonic circuits through transfer printing Gunther Roelkens UNIVERSITEIT GENT VZW Final...Form ApprovedOMB No. 0704-0188 The public reporting burden for this collection of information is estimated to average 1 hour per response, including...collection of information . Send comments regarding this burden estimate or   any other aspect of this collection of information , including suggestions

  1. SU-E-T-432: Field Size Influence On the Electron and Photon Spectra Within Small MV Field Detectors

    SciTech Connect

    Benmakhlouf, H; Andreo, P

    2015-06-15

    Purpose: To investigate the influence of photon field size on the electron and photon fluence spectra in the active volume of small field detectors. Methods: The PENELOPE MC system based usercode PenEasy was used to calculate the material influence on the spectra by scoring the differential fluence in inserts of silicon, carbon, phosphorus and aluminium having 3 mm diameter and height. The spectra were then calculated inside the active volume of eleven detectors (ion chambers and solid-state detectors) whose geometry was simulated with great detail. The inserts/detectors were placed at 10 cm depth in a 30 cm x 30 cm x 30 cm water phantom and irradiated with 2.5 MeV photons and Varian Clinac 6 MV beams of small, medium and large size. Results: For all configurations, photon spectra in the scoring volume were similar to that in a small water volume except for additional characteristic x-ray peaks resulting from the material itself and from the materials surrounding the detectors (i.e. high-Z shielding the silicon). Electron fluence calculated in the inserts were up to 60% larger than in water; the difference increased with material density and decreasing field size. MC-calculated doses were compared to analytically determined collision kerma and restricted cema (cut-off=15keV). For the inserts, with large and medium fields K-col agreed with MC-dose, but K-col overestimated the dose for small fields due to lack of lateral CPE. For the detectors, up to 15% differences between K-col and the MC-dose were found. For all configurations the C-delta and MC-dose agreed within ±2%. Conclusion: The most relevant findings were that shielding affects substantially the photon spectra and material conditions the electron spectra, their field size dependence varying with the geometry configuration. These affect the values of factors entering into relative dosimetry.

  2. A detector head design for small-animal PET with silicon photomultipliers (SiPM).

    PubMed

    Moehrs, Sascha; Del Guerra, Alberto; Herbert, Deborah J; Mandelkern, Mark A

    2006-03-07

    Small-animal PET systems are now striving for sub-millimetre resolution. Current systems based upon PSPMTs and finely pixellated scintillators can be pushed to higher resolution, but at the expense of other performance parameters and a rapidly escalating cost. Moreover, depth of interaction (DOI) information is usually difficult to assess in such systems, even though this information is highly desirable to reduce the parallax error, which is often the dominant error for such high-resolution systems. In this study we propose a high-resolution detector head for a small-animal PET imaging system with intrinsic DOI information. Instead of a pixellated scintillator, our design is based upon the classic Anger camera principle, i.e. the head is constructed of modular layers each consisting of a continuous slab of scintillator, viewed by a new type of compact silicon photodetector. The photodetector is the recently developed silicon photomultiplier (SiPM) that as well as being very compact has many other attractive properties: high gain at low bias voltage, excellent single-photoelectron resolution and fast timing. A detector head of about 4 x 4 cm2 in area is proposed, constructed from three modular layers of the type described above. We perform a simulation study, using the Monte Carlo simulation package Geant4. The simulation results are used to optimize the geometry of the detector head and characterize its performance. Additionally, hit estimation algorithms are studied to determine the interaction position of annihilation photons correctly over the whole detector surface. The resulting detector has a nearly uniform efficiency for 511 keV photons of approximately 70% and an intrinsic spatial resolution of less than approximately 0.4 mm full width at half maximum (fwhm).

  3. Novel detectors for silicon based microdosimetry, their concepts and applications

    NASA Astrophysics Data System (ADS)

    Rosenfeld, Anatoly B.

    2016-02-01

    This paper presents an overview of the development of semiconductor microdosimetry and the most current (state-of-the-art) Silicon on Insulator (SOI) detectors for microdosimetry based mainly on research and development carried out at the Centre for Medical Radiation Physics (CMRP) at the University of Wollongong with collaborators over the last 18 years. In this paper every generation of CMRP SOI microdosimeters, including their fabrication, design, and electrical and charge collection characterisation are presented. A study of SOI microdosimeters in various radiation fields has demonstrated that under appropriate geometrical scaling, the response of SOI detectors with the well-known geometry of microscopically sensitive volumes will record the energy deposition spectra representative of tissue cells of an equivalent shape. This development of SOI detectors for microdosimetry with increased complexity has improved the definition of microscopic sensitive volume (SV), which is modelling the deposition of ionising energy in a biological cell, that are led from planar to 3D SOI detectors with an array of segmented microscopic 3D SVs. The monolithic ΔE-E silicon telescope, which is an alternative to the SOI silicon microdosimeter, is presented, and as an example, applications of SOI detectors and ΔE-E monolithic telescope for microdosimetery in proton therapy field and equivalent neutron dose measurements out of field are also presented. An SOI microdosimeter "bridge" with 3D SVs can derive the relative biological effectiveness (RBE) in 12C ion radiation therapy that matches the tissue equivalent proportional counter (TEPC) quite well, but with outstanding spatial resolution. The use of SOI technology in experimental microdosimetry offers simplicity (no gas system or HV supply), high spatial resolution, low cost, high count rates, and the possibility of integrating the system onto a single device with other types of detectors.

  4. Characterization of Photon-Counting Detector Responsivity for Non-Linear Two-Photon Absorption Process

    NASA Technical Reports Server (NTRS)

    Sburlan, S. E.; Farr, W. H.

    2011-01-01

    Sub-band absorption at 1550 nm has been demonstrated and characterized on silicon Geiger mode detectors which normally would be expected to have no response at this wavelength. We compare responsivity measurements to singlephoton absorption for wavelengths slightly above the bandgap wavelength of silicon (approx. 1100 microns). One application for this low efficiency sub-band absorption is in deep space optical communication systems where it is desirable to track a 1030 nm uplink beacon on the same flight terminal detector array that monitors a 1550 nm downlink signal for pointingcontrol. The currently observed absorption at 1550 nm provides 60-70 dB of isolation compared to the response at 1064 nm, which is desirable to avoid saturation of the detector by scattered light from the downlink laser.

  5. Photon-noise limited sensitivity in titanium nitride kinetic inductance detectors

    SciTech Connect

    Hubmayr, J. Beall, J.; Becker, D.; Cho, H.-M.; Hilton, G. C.; Li, D.; Pappas, D. P.; Van Lanen, J.; Vissers, M. R.; Gao, J.; Devlin, M.; Dober, B.; Groppi, C.; Mauskopf, P.; Irwin, K. D.; Wang, Y.; Wei, L. F.

    2015-02-16

    We demonstrate photon-noise limited performance at sub-millimeter wavelengths in feedhorn-coupled, microwave kinetic inductance detectors made of a TiN/Ti/TiN trilayer superconducting film, tuned to have a transition temperature of 1.4 K. Micro-machining of the silicon-on-insulator wafer backside creates a quarter-wavelength backshort optimized for efficient coupling at 250 μm. Using frequency read out and when viewing a variable temperature blackbody source, we measure device noise consistent with photon noise when the incident optical power is >0.5 pW, corresponding to noise equivalent powers >3×10{sup −17} W/√(Hz). This sensitivity makes these devices suitable for broadband photometric applications at these wavelengths.

  6. Silicon photomultiplier detector for atmospheric lidar applications.

    PubMed

    Riu, Jordi; Sicard, Michaël; Royo, Santiago; Comerón, Adolfo

    2012-04-01

    The viability and performance of using a silicon photomultiplier (SiPM) in atmospheric lidar applications is experimentally compared against the well-established use of photomultiplier tubes. By using a modified lidar setup for simultaneous data acquisition of both types of sensors, we demonstrate that a SiPM can offer appropriate qualities for this specific application where the detection of fast, extremely low light pulses and large dynamic range signals are essential capabilities. The experimental results show that the SiPM has an appropriate behaviour offering suitable capabilities for elastic, backscatter aerosol lidars. To the best of our knowledge, this is the first study showing SiPM for atmospheric lidar applications.

  7. Performance of Thin-Window Silicon Drift Detectors

    SciTech Connect

    Carini, , G.A.; Chen, W.; De Geronimo, G.; Fried, J.; Gaskin, J.A.; Keister; J.W.; Li, Z.; Ramsey, B.D.; Rehak, P.; Siddons, D.P.

    2008-10-20

    Several sets of hexagonal Silicon Drift Detector (SDD) arrays were produced at BNL and by a commercial vendor, KETEK. Each array consists of 14 independent detectors (pixels) and two additional test pixels at two of the corners. The side of the detector upon which the X-ray radiation is incident (window side) has a thin junction covering the entire active area. The opposite side (device side) contains a drift-field electrode structure in the form of a hexagonal spiral and an electron collecting anode. There are 4 guard rings surrounding the 14-pixel array area on both sides of the detector. Within each array, 7 of the pixels have an aluminum field plate - interrupted spirals that stabilize the electric potential under the Si-SiO2 interface, while the other 7 do not. The drift field in the silicon volume is controlled by three biases: one is applied to a rectifying contact, one to the detector entrance window, and the third to a contact on the outer portion of the spiral common to all pixels in the array. Some arrays have been newly measured in NSLS beam line U3C at BNL. The complete assemblies were installed in the vacuum and cooled to ?27 C. During this run, spectra for energies ranging between 400 and 900 eV were collected in several pixels, some with field plates and others without. The detailed testing results of several arrays are reported here.

  8. Silicon strip detector for a novel 2D dosimetric method for radiotherapy treatment verification

    NASA Astrophysics Data System (ADS)

    Bocci, A.; Cortés-Giraldo, M. A.; Gallardo, M. I.; Espino, J. M.; Arráns, R.; Alvarez, M. A. G.; Abou-Haïdar, Z.; Quesada, J. M.; Pérez Vega-Leal, A.; Pérez Nieto, F. J.

    2012-05-01

    The aim of this work is to characterize a silicon strip detector and its associated data acquisition system, based on discrete electronics, to obtain in a near future absorbed dose maps in axial planes for complex radiotherapy treatments, using a novel technique. The experimental setup is based on two phantom prototypes: the first one is a polyethylene slab phantom used to characterize the detector in terms of linearity, percent depth dose, reproducibility, uniformity and penumbra. The second one is a cylindrical phantom, specifically designed and built to recreate conditions close to those normally found in clinical environments, for treatment planning assessment. This system has been used to study the dosimetric response of the detector, in the axial plane of the phantom, as a function of its angle with respect to the irradiation beam. A software has been developed to operate the rotation of this phantom and to acquire signals from the silicon strip detector. As an innovation, the detector was positioned inside the cylindrical phantom parallel to the beam axis. Irradiation experiments were carried out with a Siemens PRIMUS linac operating in the 6 MV photon mode at the Virgen Macarena Hospital. Monte Carlo simulations were performed using Geant4 toolkit and results were compared to Treatment Planning System (TPS) calculations for the absorbed dose-to-water case. Geant4 simulations were used to estimate the sensitivity of the detector in different experimental configurations, in relation to the absorbed dose in each strip. A final calibration of the detector in this clinical setup was obtained by comparing experimental data with TPS calculations.

  9. Picosecond dynamics of a silicon donor based terahertz detector device

    SciTech Connect

    Bowyer, Ellis T.; Li, Juerong; Litvinenko, K. L.; Murdin, B. N. E-mail: yuxm@pku.edu.cn; Villis, B. J.; Erfani, Morteza; Matmon, Guy; Aeppli, Gabriel; Ortega, Jean-Michel; Prazeres, Rui; Dong, Li; Yu, Xiaomei E-mail: yuxm@pku.edu.cn

    2014-07-14

    We report the characteristics of a simple complementary metal-oxide-semiconductor compatible terahertz detector device with low response time (nanoseconds) determined using a short-pulse, high intensity free-electron laser. The noise equivalent power was 1 × 10{sup −11} W Hz{sup −1/2}. The detector has an enhanced response over narrow bands, most notably at 9.5 THz, with a continuum response at higher frequencies. Using such a device, the dynamics of donors in silicon can be explored, a system which has great potential for quantum information processing.

  10. Detectors based on silicon photomultiplier arrays for medical imaging applications

    SciTech Connect

    Llosa, G.; Barrio, J.; Cabello, J.; Lacasta, C.; Oliver, J. F.; Stankova, V.; Solaz, C.

    2011-07-01

    Silicon photomultipliers (SiPMs) have experienced a fast development and are now employed in different research fields. The availability of 2D arrays that provide information of the interaction position in the detector has had a high interest for medical imaging. Continuous crystals combined with segmented photodetectors can provide higher efficiency than pixellated crystals and very high spatial resolution. The IRIS group at IFIC is working on the development of detector heads based on continuous crystals coupled to SiPM arrays for different applications, including a small animal PET scanner in collaboration with the Univ. of Pisa and INFN Pisa, and a Compton telescope for dose monitoring in hadron therapy. (authors)

  11. Initial experience with the CDF layer 00 silicon detector

    SciTech Connect

    C. Hill

    2003-03-17

    We report on initial experience with the CDF Layer 00 Detector. Layer 00 is an innovative, low-mass, silicon detector installed in CDF during the upgrade for Run 2A of the Tevatron. Noise pickup present during operation at CDF is discussed. An event-by-event pedestal correction implemented by CDF is presented. This off-line solution prevents L00 from being used in the current incarnation of the on-line displaced track trigger. Preliminary performance of Layer 00 is described.

  12. Reconfigurable SDM Switching Using Novel Silicon Photonic Integrated Circuit.

    PubMed

    Ding, Yunhong; Kamchevska, Valerija; Dalgaard, Kjeld; Ye, Feihong; Asif, Rameez; Gross, Simon; Withford, Michael J; Galili, Michael; Morioka, Toshio; Oxenløwe, Leif Katsuo

    2016-12-21

    Space division multiplexing using multicore fibers is becoming a more and more promising technology. In space-division multiplexing fiber network, the reconfigurable switch is one of the most critical components in network nodes. In this paper we for the first time demonstrate reconfigurable space-division multiplexing switching using silicon photonic integrated circuit, which is fabricated on a novel silicon-on-insulator platform with buried Al mirror. The silicon photonic integrated circuit is composed of a 7 × 7 switch and low loss grating coupler array based multicore fiber couplers. Thanks to the Al mirror, grating couplers with ultra-low coupling loss with optical multicore fibers is achieved. The lowest total insertion loss of the silicon integrated circuit is as low as 4.5 dB, with low crosstalk lower than -30 dB. Excellent performances in terms of low insertion loss and low crosstalk are obtained for the whole C-band. 1 Tb/s/core transmission over a 2-km 7-core fiber and space-division multiplexing switching is demonstrated successfully. Bit error rate performance below 10(-9) is obtained for all spatial channels with low power penalty. The proposed design can be easily upgraded to reconfigurable optical add/drop multiplexer capable of switching several multicore fibers.

  13. Reconfigurable SDM Switching Using Novel Silicon Photonic Integrated Circuit

    NASA Astrophysics Data System (ADS)

    Ding, Yunhong; Kamchevska, Valerija; Dalgaard, Kjeld; Ye, Feihong; Asif, Rameez; Gross, Simon; Withford, Michael J.; Galili, Michael; Morioka, Toshio; Oxenløwe, Leif Katsuo

    2016-12-01

    Space division multiplexing using multicore fibers is becoming a more and more promising technology. In space-division multiplexing fiber network, the reconfigurable switch is one of the most critical components in network nodes. In this paper we for the first time demonstrate reconfigurable space-division multiplexing switching using silicon photonic integrated circuit, which is fabricated on a novel silicon-on-insulator platform with buried Al mirror. The silicon photonic integrated circuit is composed of a 7 × 7 switch and low loss grating coupler array based multicore fiber couplers. Thanks to the Al mirror, grating couplers with ultra-low coupling loss with optical multicore fibers is achieved. The lowest total insertion loss of the silicon integrated circuit is as low as 4.5 dB, with low crosstalk lower than -30 dB. Excellent performances in terms of low insertion loss and low crosstalk are obtained for the whole C-band. 1 Tb/s/core transmission over a 2-km 7-core fiber and space-division multiplexing switching is demonstrated successfully. Bit error rate performance below 10-9 is obtained for all spatial channels with low power penalty. The proposed design can be easily upgraded to reconfigurable optical add/drop multiplexer capable of switching several multicore fibers.

  14. Germanium on silicon to enable integrated photonic circuits

    NASA Astrophysics Data System (ADS)

    Hopkins, F. Kenneth; Walsh, Kevin M.; Benken, Alexander; Jones, John; Averett, Kent; Diggs, Darnell E.; Tan, Loon-Seng; Mou, Shin; Grote, James G.

    2013-09-01

    Electronic circuits alone cannot fully meet future requirements for speed, size, and weight of many sensor systems, such as digital radar technology and as a result, interest in integrated photonic circuits (IPCs) and the hybridization of electronics with photonics is growing. However, many IPC components such as photodetectors are not presently ideal, but germanium has many advantages to enable higher performance designs that can be better incorporated into an IPC. For example, Ge photodetectors offer an enormous responsivity to laser wavelengths near 1.55μm at high frequencies to 40GHz, and they can be easily fabricated as part of a planar silicon processing schedule. At the same time, germanium has enormous potential for enabling 1.55 micron lasers on silicon and for enhancing the performance of silicon modulators. Our new effort has begun by studying the deposition of germanium on silicon and beginning to develop methods for processing these films. In initial experiments comparing several common chemical solutions for selective etching under patterned positive photoresist, it was found that hydrogen peroxide (H2O2) at or below room temperature (20 C) produced the sharpest patterns in the Ge films; H2O2 at a higher temperature (50 C) resulted in the greatest lateral etching.

  15. Reconfigurable SDM Switching Using Novel Silicon Photonic Integrated Circuit

    PubMed Central

    Ding, Yunhong; Kamchevska, Valerija; Dalgaard, Kjeld; Ye, Feihong; Asif, Rameez; Gross, Simon; Withford, Michael J.; Galili, Michael; Morioka, Toshio; Oxenløwe, Leif Katsuo

    2016-01-01

    Space division multiplexing using multicore fibers is becoming a more and more promising technology. In space-division multiplexing fiber network, the reconfigurable switch is one of the most critical components in network nodes. In this paper we for the first time demonstrate reconfigurable space-division multiplexing switching using silicon photonic integrated circuit, which is fabricated on a novel silicon-on-insulator platform with buried Al mirror. The silicon photonic integrated circuit is composed of a 7 × 7 switch and low loss grating coupler array based multicore fiber couplers. Thanks to the Al mirror, grating couplers with ultra-low coupling loss with optical multicore fibers is achieved. The lowest total insertion loss of the silicon integrated circuit is as low as 4.5 dB, with low crosstalk lower than −30 dB. Excellent performances in terms of low insertion loss and low crosstalk are obtained for the whole C-band. 1 Tb/s/core transmission over a 2-km 7-core fiber and space-division multiplexing switching is demonstrated successfully. Bit error rate performance below 10−9 is obtained for all spatial channels with low power penalty. The proposed design can be easily upgraded to reconfigurable optical add/drop multiplexer capable of switching several multicore fibers. PMID:28000735

  16. Comparison of TPB and bis-MSB as VUV waveshifters in prototype LBNE photon detector paddles

    NASA Astrophysics Data System (ADS)

    Baptista, B.; Mufson, S.

    2013-12-01

    The Long-Baseline Neutrino Experiment (LBNE) Project is expected to provide facilities that will enable a program in neutrino physics that can measure fundamental physical parameters, explore physics beyond the Standard Model and better elucidate the nature of matter and anti-matter. The LBNE Photon Detection subsystem is primarily designed to detect the scintillation photons produced at 128 nm as ionizing particles traverse the liquid argon. The LBNE reference design for the photon detector subsystem uses adiabatic light guides consisting of cast acrylic bars whose surface is embedded with waveshifter to convert the Vacuum Ultraviolet (VUV) 128 nm photons into the optical bandpass of silicon photomultipliers (SiPMs). In this investigation, we describe comparative studies of two VUV waveshifters — TPB and bis-MSB. We find that bis-MSB is more efficient than TPB at 128 nm. We also find that the efficiency of converting VUV photons into the optical for both waveshifters rises from 170-200 nm. Studies of the long wavelength behavior of the waveshifters supports the result that the efficiency is rising.

  17. Silicon-photonics-based optical transceivers for high-speed interconnect applications

    NASA Astrophysics Data System (ADS)

    De Dobbelaere, P.; Armijo, G.; Balardeta, J.; Chase, B.; Chi, Y.; Dahl, A.; De Koninck, Y.; Denton, S.; Eker, M.; Fathpour, S.; Foltz, D.; Gholami, F.; Gloeckner, S.; Hon, K. Y.; Hovey, S.; Jackson, S.; Li, W.; Liang, Y.; Mack, M.; Masini, G.; McGee, G.; Mekis, A.; Pang, S.; Peterson, M.; Pinguet, T.; Planchon, L.; Roberson, K.; Sahni, S.; Schramm, J.; Sharp, M.; Sohn, C.; Stechschulte, K.; Sun, P.; Vastola, G.; Wang, S.; Weber, B.; Wong, G.; Yokoyama, K.; Yu, S.; Zhou, R.

    2016-03-01

    In this paper we discuss design and characterization of silicon-photonics-based 100 Gbps (4×26 Gbps) transceivers for parallel single mode fiber communication. We also address some key underlying technologies including silicon photonics wafer processing, photonic device libraries, light source integration and packaging technologies.

  18. Temperature dependence of the response of ultra fast silicon detectors

    NASA Astrophysics Data System (ADS)

    Mulargia, R.; Arcidiacono, R.; Bellora, A.; Boscardin, M.; Cartiglia, N.; Cenna, F.; Cirio, R.; Dalla Betta, G. F.; Durando, S.; Fadavi, A.; Ferrero, M.; Galloway, Z.; Gruey, B.; Freeman, P.; Kramberger, G.; Mandic, I.; Monaco, V.; Obertino, M.; Pancheri, L.; Paternoster, G.; Ravera, F.; Sacchi, R.; Sadrozinski, H. F. W.; Seiden, A.; Sola, V.; Spencer, N.; Staiano, A.; Wilder, M.; Woods, N.; Zatserklyaniy, A.

    2016-12-01

    The Ultra Fast Silicon Detectors (UFSD) are a novel concept of silicon detectors based on the Low Gain Avalanche Diode (LGAD) technology, which are able to obtain time resolution of the order of few tens of picoseconds. First prototypes with different geometries (pads/pixels/strips), thickness (300 and 50 μm) and gain (between 5 and 20) have been recently designed and manufactured by CNM (Centro Nacional de Microelectrónica, Barcelona) and FBK (Fondazione Bruno Kessler, Trento). Several measurements on these devices have been performed in laboratory and in beam test and a dependence of the gain on the temperature has been observed. Some of the first measurements will be shown (leakage current, breakdown voltage, gain and time resolution on the 300 μm from FBK and gain on the 50 μm-thick sensor from CNM) and a comparison with the theoretically predicted trend will be discussed.

  19. Exploiting metamaterials, plasmonics and nanoantennas concepts in silicon photonics

    NASA Astrophysics Data System (ADS)

    Rodríguez-Fortuño, Francisco J.; Espinosa-Soria, Alba; Martínez, Alejandro

    2016-12-01

    The interaction of light with subwavelength metallic nano-structures is at the heart of different current scientific hot topics, namely plasmonics, metamaterials and nanoantennas. Research in these disciplines during the last decade has given rise to new, powerful concepts providing an unprecedented degree of control over light manipulation at the nanoscale. However, only recently have these concepts been used to increase the capabilities of light processing in current photonic integrated circuits (PICs), which traditionally rely only on dielectric materials with element sizes larger than the light wavelength. Amongst the different PIC platforms, silicon photonics is expected to become mainstream, since manufacturing using well-established CMOS processes enables the mass production of low-cost PICs. In this review we discuss the benefits of introducing recent concepts arisen from the fields of metamaterials, plasmonics and nanoantennas into a silicon photonics integrated platform. We review existing works in this direction and discuss how this hybrid approach can lead to the improvement of current PICs enabling novel and disruptive applications in photonics.

  20. A silicon carbide room-temperature single-photon source

    NASA Astrophysics Data System (ADS)

    Castelletto, S.; Johnson, B. C.; Ivády, V.; Stavrias, N.; Umeda, T.; Gali, A.; Ohshima, T.

    2014-02-01

    Over the past few years, single-photon generation has been realized in numerous systems: single molecules, quantum dots, diamond colour centres and others. The generation and detection of single photons play a central role in the experimental foundation of quantum mechanics and measurement theory. An efficient and high-quality single-photon source is needed to implement quantum key distribution, quantum repeaters and photonic quantum information processing. Here we report the identification and formation of ultrabright, room-temperature, photostable single-photon sources in a device-friendly material, silicon carbide (SiC). The source is composed of an intrinsic defect, known as the carbon antisite-vacancy pair, created by carefully optimized electron irradiation and annealing of ultrapure SiC. An extreme brightness (2×106 counts s-1) resulting from polarization rules and a high quantum efficiency is obtained in the bulk without resorting to the use of a cavity or plasmonic structure. This may benefit future integrated quantum photonic devices.

  1. Thin-film scintillators for extended ultraviolet /UV/ response silicon detectors

    NASA Technical Reports Server (NTRS)

    Viehmann, W.

    1979-01-01

    The preparation and radiometric properties of silicon detectors coated with fluorescent thin films are described. The films are deposited from solutions of clear plastics, such as acrylic resins, polyvinyl toluene or polystyrene, and of organic laser dyes in a common solvent. They are optically clear, mechanically and chemically stable, yet easily applied and removed. Multiple doped films of a few microns thickness exhibit broad-band absorption from less than 250 nm to about 450 nm and narrow band emissions with peaks ranging from 380 nm to 600 nm. Internal quantum efficiencies are close to 100 percent and fluorescence decay times are in the nanosecond range. When deposited on optically denser media, a large fraction of the fluorescent emission is trapped in the substrate. Silicon photodiodes coated with multiple doped films exhibit high external quantum efficiencies and virtually flat photon response in the near UV.

  2. Flexible amorphous silicon PIN diode x-ray detectors

    NASA Astrophysics Data System (ADS)

    Marrs, Michael; Bawolek, Edward; Smith, Joseph T.; Raupp, Gregory B.; Morton, David

    2013-05-01

    A low temperature amorphous silicon (a-Si) thin film transistor (TFT) and amorphous silicon PIN photodiode technology for flexible passive pixel detector arrays has been developed using active matrix display technology. The flexible detector arrays can be conformed to non-planar surfaces with the potential to detect x-rays or other radiation with an appropriate conversion layer. The thin, lightweight, and robust backplanes may enable the use of highly portable x-ray detectors for use in the battlefield or in remote locations. We have fabricated detector arrays up to 200 millimeters along the diagonal on a Gen II (370 mm x 470 mm rectangular substrate) using plasma enhanced chemical vapor deposition (PECVD) a-Si as the active layer and PECVD silicon nitride (SiN) as the gate dielectric and passivation. The a-Si based TFTs exhibited an effective saturation mobility of 0.7 cm2/V-s, which is adequate for most sensing applications. The PIN diode material was fabricated using a low stress amorphous silicon (a-Si) PECVD process. The PIN diode dark current was 1.7 pA/mm2, the diode ideality factor was 1.36, and the diode fill factor was 0.73. We report on the critical steps in the evolution of the backplane process from qualification of the low temperature (180°C) TFT and PIN diode process on the 150 mm pilot line, the transfer of the process to flexible plastic substrates, and finally a discussion and demonstration of the scale-up to the Gen II (370 x 470 mm) panel scale pilot line.

  3. Experience with parallel optical link for the CDF silicon detector

    SciTech Connect

    S. Hou

    2003-04-11

    The Dense Optical Interface Module (DOIM) is a byte-wide optical link developed for the Run II upgrade of the CDF silicon tracking system [1]. The module consists of a transmitter with a laser-diode array for conversion of digitized detector signals to light outputs, a 22 m optical fiber ribbon cable for light transmission, and a receiver converting the light pulses back to electrical signals. We report on the design feature, characteristics, and radiation tolerance.

  4. Two-photon-excited photoluminescence from porous silicon

    SciTech Connect

    Diener, J.; Shen, Y.R. |; Kovalev, D.I.; Polisski, G.; Koch, F.

    1998-11-01

    Two-photon-excited photoluminescence can be readily observed from porous silicon (PSi) with pulsed lasers. While its spectrum and lifetime are identical to those under one-photon excitation, it has a degree of polarization significantly higher than the latter and depending on the orientation of the input polarization with respect to the crystalline axes of the sample. The degree of polarization is a maximum when the input polarization is along [110] in the surface plane of PSi prepared from a Si (100) wafer and a minimum along [010]. The results can be understood from selective excitation of ellipsoidal nanoparticles by linearly polarized light and intrinsic anisotropy in two-photon excitation of crystalline Si. {copyright} {ital 1998} {ital The American Physical Society}

  5. On-chip, photon-number-resolving, telecommunication-band detectors for scalable photonic information processing

    SciTech Connect

    Gerrits, Thomas; Lita, Adriana E.; Calkins, Brice; Tomlin, Nathan A.; Fox, Anna E.; Linares, Antia Lamas; Mirin, Richard P.; Nam, Sae Woo; Thomas-Peter, Nicholas; Metcalf, Benjamin J.; Spring, Justin B.; Langford, Nathan K.; Walmsley, Ian A.; Gates, James C.; Smith, Peter G. R.

    2011-12-15

    Integration is currently the only feasible route toward scalable photonic quantum processing devices that are sufficiently complex to be genuinely useful in computing, metrology, and simulation. Embedded on-chip detection will be critical to such devices. We demonstrate an integrated photon-number-resolving detector, operating in the telecom band at 1550 nm, employing an evanescently coupled design that allows it to be placed at arbitrary locations within a planar circuit. Up to five photons are resolved in the guided optical mode via absorption from the evanescent field into a tungsten transition-edge sensor. The detection efficiency is 7.2{+-}0.5 %. The polarization sensitivity of the detector is also demonstrated. Detailed modeling of device designs shows a clear and feasible route to reaching high detection efficiencies.

  6. CDF Run IIb Silicon Vertex Detector DAQ Upgrade

    SciTech Connect

    S. Behari et al.

    2003-12-18

    The CDF particle detector operates in the beamline of the Tevatron proton-antiproton collider at Fermilab, Batavia, IL. The Tevatron is expected to undergo luminosity upgrades (Run IIb) in the future, resulting in a higher number of interactions per beam crossing. To operate in this dense radiation environment, an upgrade of CDF's silicon vertex detector (SVX) subsystem and a corresponding upgrade of its VME-based DAQ system has been explored. Prototypes of all the Run IIb SVX DAQ components have been constructed, assembled into a test stand and operated successfully using an adapted version of CDF's network-capable DAQ software. In addition, a PCI-based DAQ system has been developed as a fast and inexpensive tool for silicon detector and DAQ component testing in the production phase. In this paper they present an overview of the Run IIb silicon DAQ upgrade, emphasizing the new features and improvements incorporated into the constituent VME boards, and discuss a PCI-based DAQ system developed to facilitate production tests.

  7. Integration of silicon photonics into electronic processes

    NASA Astrophysics Data System (ADS)

    Orcutt, Jason S.; Ram, Rajeev J.; Stojanović, Vladimir

    2013-02-01

    Two layer vertical coupling photonic structures can be directly fabricated on a standard SOI wafer using a combination of reactive ion etching (RIE) and proton beam irradiation followed by electrochemical etching. The top layer structures are defined by RIE on the device layer, while the bottom layer structures are defined by proton beam irradiation on the substrate. Light coupling between the structures in the two layers has been demonstrated via vertical coupling waveguides. According to simulations, the coupling efficiency mainly depends on the thickness of the two layer structure and the gap between them. In this process, the thickness of the top layer structures is fixed by the device layer thickness of the SOI wafer, which is typically 200-300 nm. The gap depends on the thickness of the oxide layer of the SOI wafer, and it can be shifted due to the natural bending of the top layer structures. The bottom layer structure thickness can vary due to different energies of proton beam. Furthermore we show the fabrication of tapered bottom waveguides, which are thin at the coupling region for higher coupling efficiency, and thick at the end for easily coupling light from an optical fiber or a focused lens.

  8. High resolution micro-CT of low attenuating organic materials using large area photon-counting detector

    NASA Astrophysics Data System (ADS)

    Kumpová, I.; Vavřík, D.; Fíla, T.; Koudelka, P.; Jandejsek, I.; Jakůbek, J.; Kytýř, D.; Zlámal, P.; Vopálenský, M.; Gantar, A.

    2016-02-01

    To overcome certain limitations of contemporary materials used for bone tissue engineering, such as inflammatory response after implantation, a whole new class of materials based on polysaccharide compounds is being developed. Here, nanoparticulate bioactive glass reinforced gelan-gum (GG-BAG) has recently been proposed for the production of bone scaffolds. This material offers promising biocompatibility properties, including bioactivity and biodegradability, with the possibility of producing scaffolds with directly controlled microgeometry. However, to utilize such a scaffold with application-optimized properties, large sets of complex numerical simulations using the real microgeometry of the material have to be carried out during the development process. Because the GG-BAG is a material with intrinsically very low attenuation to X-rays, its radiographical imaging, including tomographical scanning and reconstructions, with resolution required by numerical simulations might be a very challenging task. In this paper, we present a study on X-ray imaging of GG-BAG samples. High-resolution volumetric images of investigated specimens were generated on the basis of micro-CT measurements using a large area flat-panel detector and a large area photon-counting detector. The photon-counting detector was composed of a 010× 1 matrix of Timepix edgeless silicon pixelated detectors with tiling based on overlaying rows (i.e. assembled so that no gap is present between individual rows of detectors). We compare the results from both detectors with the scanning electron microscopy on selected slices in transversal plane. It has been shown that the photon counting detector can provide approx. 3× better resolution of the details in low-attenuating materials than the integrating flat panel detectors. We demonstrate that employment of a large area photon counting detector is a good choice for imaging of low attenuating materials with the resolution sufficient for numerical simulations.

  9. Efficiently heralded silicon ring resonator photon-pair source

    NASA Astrophysics Data System (ADS)

    Steidle, Jeffrey A.; Fanto, Michael L.; Tison, Christopher C.; Wang, Zihao; Alsing, Paul M.; Preble, Stefan F.

    2016-05-01

    Presented here are results on a silicon ring resonator photon pair source with a high heralding efficiency. Previous ring resonator sources suffered from an effective 50% loss because, in order to generate the photons, the pump must be able to couple into the resonator which is an effective loss channel. However, in practice the optical loss of the pump can be traded off for a dramatic increase in heralding efficiency. This research found theoretically that the heralding efficiency should increase by a factor of ~ 3:75 with a factor of 10 increase in the required pump power. This was demonstrated experimentally by varying the separation (gap) between the input waveguide and the ring while maintaining a constant drop port gap. The ring (R = 18:5μm, W = 500nm, and H = 220nm) was pumped by a tunable laser (λ ≍ 1550nm). The non-degenerate photons, produced via spontaneous four wave mixing, exited the ring and were coupled to fiber upon which they were filtered symmetrically about the pump. Coincidence counts were collected for all possible photon path combinations (through and drop port) and the ratio of the drop port coincidences to the sum of the drop port and cross term coincidences (one photon from the drop port and one from the through port) was calculated. With a 350nm pump waveguide gap (2:33 times larger than the drop port gap) we confirmed our theoretical predictions, with an observed improvement in heralding efficiency by a factor of ~ 2:61 (96:7% of correlated photons coupled out of the drop port). These results will enable increased photon flux integrated photon sources which can be utilized for high performance quantum computing and communication systems.

  10. Development of Pixelated Linear Avalanche Integration Detector Using Silicon on Insulator Technology

    NASA Astrophysics Data System (ADS)

    Koyama, Akihiro; Shimazoe, Kenji; Takahashi, Hiroyuki; Hamasaki, Ryutaro; Orita, Tadashi; Onuki, Yoshiyuki; Otani, Wataru; Takeshita, Tohru; Kurachi, Ikuo; Miyoshi, Toshinobu; Nakamura, Isamu; Arai, Yasuo

    In various X-ray imaging applications such as single photon counting X-ray CT, micrometer scale spatial resolution and high detection efficiency possibility using structured porous scintillator took great interests. In order to achieve precise energy- and timing information measurements, high sensitive separately readable photo detector needs to be coupled to porous crystal. Therefore, we fabricated test element group (TEG) of micro sized linear avalanche integration detector (Plaid) on a silicon on insulator (SOI) wafer and inspected performance of each device. Measurements results showed guard ring structure achieved avalanche gain of magnitude from 10 to 1000 with lower gain saturation effect than non-guard ring structure. We concluded guard ring structure is desirable to achieve stable gain performance toward various optical powers and efficient to use for scintillation light read out.

  11. Cross two photon absorption in a silicon photonic crystal waveguide fiber taper coupler with a physical junction

    SciTech Connect

    Sarkissian, Raymond O'Brien, John

    2015-01-21

    Cross two photon absorption in silicon is characterized using a tapered fiber photonic crystal silicon waveguide coupler. There is a physical junction between the tapered fiber and the waveguide constituting a stand-alone device. This device is used to obtain the spectrum for cross two photon absorption coefficient per unit volume of interaction between photons of nondegenerate energy. The corresponding Kerr coefficient per unit volume of interaction is also experimentally extracted. The thermal resistance of the device is also experimentally determined and the response time of the device is estimated for on-chip all-optical signal processing and data transfer between optical signals of different photon energies.

  12. Estimation of mammary gland composition using CdTe series detector developed for photon-counting mammography

    NASA Astrophysics Data System (ADS)

    Ihori, Akiko; Okamoto, Chizuru; Yamakawa, Tsutomu; Yamamoto, Shuichiro; Okada, Masahiro; Nakajima, Ai; Kato, Misa; Kodera, Yoshie

    2016-03-01

    Energy resolved photon-counting mammography is a new technology, which counts the number of photons that passes through an object, and presents it as a pixel value in an image of the object. Silicon semiconductor detectors are currently used in commercial mammography. However, the disadvantage of silicon is the low absorption efficiency for high X-ray energies. A cadmium telluride (CdTe) series detector has a high absorption efficiency over a wide energy range. In this study, we proposed a method to estimate the composition of the mammary gland using a CdTe series detector as a photon-counting detector. The fact that the detection rate of breast cancer in mammography is affected by mammary gland composition is now widely accepted. Assessment of composition of the mammary gland has important implications. An important advantage of our proposed technique is its ability to discriminate photons using three energy bins. We designed the CdTe series detector system using the MATLAB simulation software. The phantom contains nine regions with the ratio of glandular tissue and adipose varying in increments of 10%. The attenuation coefficient for each bin's energy was calculated from the number of input and output photons possessed by each. The evaluation results obtained by plotting the attenuation coefficient μ in a three-dimensional (3D) scatter plot show that the plots had a regular composition order congruent with that of the mammary gland. Consequently, we believe that our proposed method can be used to estimate the composition of the mammary gland.

  13. Silicon drift detector with reduced lateral diffusion:. experimental results

    NASA Astrophysics Data System (ADS)

    Šonský, J.; Valk, H.; Huizenga, J.; Hollander, R. W.; van Eijk, C. W. E.; Sarro, P. M.

    2000-01-01

    In a standard multi-anode silicon drift detector electron cloud broadening during the drifting towards the anode pixels deteriorates the energy and position resolution. This makes the detector less applicable for detection of low-energy X-rays. The signal charge sharing between several anodes can be eliminated by introducing sawtooth-shaped p + field strips. The sawtooth structure results in small electric fields directed parallel to the sensor surface and perpendicular to the drift direction which produce gutters. The drifting electrons are confined in these gutters of one saw tooth period wide. For a detector with a sawtooth period of 500 μm, we have measured the maximum number of fully confined electrons as a function of the potential gutter depth induced by different sawtooth angles.

  14. A Proposal to Upgrade the Silicon Strip Detector

    SciTech Connect

    Matis, Howard; Michael, LeVine; Jonathan, Bouchet; Stephane, Bouvier; Artemios, Geromitsos; Gerard, Guilloux; Sonia, Kabana; Christophe, Renard; Howard, Matis; Jim, Thomas; Vi Nham, Tram

    2007-11-05

    The STAR Silicon Strip Detector (SSD) was built by a collaboration of Nantes, Strasbourg and Warsaw collaborators. It is a beautiful detector; it can provide 500 mu m scale pointing resolution at the vertex when working in combination with the TPC. It was first used in Run 4, when half the SSD was installed in an engineering run. The full detector was installed for Run 5 (the Cu-Cu run) and the operation and performance of the detector was very successful. However, in preparation for Run 6, two noisy ladders (out of 20) were replaced and this required that the SSD be removed from the STAR detector. The re-installation of the SSD was not fully successful and so for the next two Runs, 6 and 7, the SSD suffered a cooling system failure that allowed a large fraction of the ladders to overheat and become noisy, or fail. (The cause of the SSD cooling failure was rather trivial but the SSD could not be removed betweens Runs 6 and 7 due to the inability of the STAR detector to roll along its tracks at that time.)

  15. OPC for curved designs in application to photonics on silicon

    NASA Astrophysics Data System (ADS)

    Orlando, Bastien; Farys, Vincent; Schneider, Loïc.; Cremer, Sébastien; Postnikov, Sergei V.; Millequant, Matthieu; Dirrenberger, Mathieu; Tiphine, Charles; Bayle, Sébastian; Tranquillin, Céline; Schiavone, Patrick

    2016-03-01

    Today's design for photonics devices on silicon relies on non-Manhattan features such as curves and a wide variety of angles with minimum feature size below 100nm. Industrial manufacturing of such devices requires optimized process window with 193nm lithography. Therefore, Resolution Enhancement Techniques (RET) that are commonly used for CMOS manufacturing are required. However, most RET algorithms are based on Manhattan fragmentation (0°, 45° and 90°) which can generate large CD dispersion on masks for photonic designs. Industrial implementation of RET solutions to photonic designs is challenging as most currently available OPC tools are CMOS-oriented. Discrepancy from design to final results induced by RET techniques can lead to lower photonic device performance. We propose a novel sizing algorithm allowing adjustment of design edge fragments while preserving the topology of the original structures. The results of the algorithm implementation in the rule based sizing, SRAF placement and model based correction will be discussed in this paper. Corrections based on this novel algorithm were applied and characterized on real photonics devices. The obtained results demonstrate the validity of the proposed correction method integrated in Inscale software of Aselta Nanographics.

  16. Twin photon pairs in a high-Q silicon microresonator

    SciTech Connect

    Rogers, Steven; Lu, Xiyuan; Jiang, Wei C.; Lin, Qiang

    2015-07-27

    We report the generation of high-purity twin photon pairs through cavity-enhanced non-degenerate four-wave mixing (FWM) in a high-Q silicon microdisk resonator. Twin photon pairs are created within the same cavity mode and are consequently expected to be identical in all degrees of freedom. The device is able to produce twin photons at telecommunication wavelengths with a pair generation rate as large as (3.96 ± 0.03) × 10{sup 5} pairs/s, within a narrow bandwidth of 0.72 GHz. A coincidence-to-accidental ratio of 660 ± 62 was measured, the highest value reported to date for twin photon pairs, at a pair generation rate of (2.47 ± 0.04) × 10{sup 4} pairs/s. Through careful engineering of the dispersion matching window, we have reduced the ratio of photons resulting from degenerate FWM to non-degenerate FWM to less than 0.15.

  17. Improvement in the energy resolving capabilities of photon counting detectors

    NASA Astrophysics Data System (ADS)

    Kang, D.; Lim, K. T.; Park, K.; Cho, G.

    2016-12-01

    Patterned pixel array was proposed to increase the number of energy bins in a single pixel of photon counting detectors without adding more comparators and counters. The pixels were grouped into four different types and each pixel has a common threshold and a specific threshold assigned to each pixel type. The common threshold in every pixel records the total number of incident photons regardless of its pixel type and the specific thresholds classify incident photon energies. The patterned pixel array was evaluated with the pinhole gamma camera system based on the XRI-UNO detector flip-chip bonded with a 1mm thick CdTe sensor. The experimental data was acquired with time-over-threshold mode to avoid the charge sharing problem. The shared total charges created by one photon can be found by summing all pixels within the cluster. To correct the different response to the same energy of photon, the energy calibration of the time-over-threshold value was perfomed independently depending on the cluster size. The time-over-threshold values were separated into two energy bins since we assumed that each pixel has two thresholds. Although each pixel has only two thresholds, five images from different energy windows were obtained by sharing the spectal information from four adjacent pixels. Thus, degradation of the spatial resolution in the image occured in each energy window. The image of the entire energy, however, was not degraded since all four different types of pixels have a common threshold just above the noise level. In addition, the number of steps for the threshold scan method can be drastically reduced with the increased number of effective thresholds in a single pixel.

  18. Design, fabrication, and characterization of high density silicon photonic components

    NASA Astrophysics Data System (ADS)

    Jones, Adam Michael

    Our burgeoning appetite for data relentlessly demands exponential scaling of computing and communications resources leading to an overbearing and ever-present drive to improve eciency while reducing on-chip area even as photonic components expand to ll application spaces no longer satised by their electronic counterparts. With a high index contrast, low optical loss, and compatibility with the CMOS fabrication infrastructure, silicon-on-insulator technology delivers a mechanism by which ecient, sub-micron waveguides can be fabricated while enabling monolithic integration of photonic components and their associated electronic infrastructure. The result is a solution leveraging the superior bandwidth of optical signaling on a platform capable of delivering the optical analogue to Moore's Law scaling of transistor density. Device size is expected to end Moore's Law scaling in photonics as Maxwell's equations limit the extent to which this parameter may be reduced. The focus of the work presented here surrounds photonic device miniaturization and the development of 3D optical interconnects as approaches to optimize performance in densely integrated optical interconnects. In this dissertation, several technological barriers inhibiting widespread adoption of photonics in data communications and telecommunications are explored. First, examination of loss and crosstalk performance in silicon nitride over SOI waveguide crossings yields insight into the feasibility of 3D optical interconnects with the rst experimental analysis of such a structure presented herein. A novel measurement platform utilizing a modied racetrack resonator is then presented enabling extraction of insertion loss data for highly ecient structures while requiring minimal on-chip area. Finally, pioneering work in understanding the statistical nature of doublet formation in microphotonic resonators is delivered with the resulting impact on resonant device design detailed.

  19. Design Fabrication and Characterization of High Density Silicon Photonic Components

    SciTech Connect

    Jones, Adam

    2015-02-01

    Our burgeoning appetite for data relentlessly demands exponential scaling of computing and communications resources leading to an overbearing and ever-present drive to improve e ciency while reducing on-chip area even as photonic components expand to ll application spaces no longer satis ed by their electronic counterparts. With a high index contrast, low optical loss, and compatibility with the CMOS fabrication infrastructure, silicon-on-insulator technology delivers a mechanism by which e cient, sub-micron waveguides can be fabricated while enabling monolithic integration of photonic components and their associated electronic infrastructure. The result is a solution leveraging the superior bandwidth of optical signaling on a platform capable of delivering the optical analogue to Moore's Law scaling of transistor density. Device size is expected to end Moore's Law scaling in photonics as Maxwell's equations limit the extent to which this parameter may be reduced. The focus of the work presented here surrounds photonic device miniaturization and the development of 3D optical interconnects as approaches to optimize performance in densely integrated optical interconnects. In this dissertation, several technological barriers inhibiting widespread adoption of photonics in data communications and telecommunications are explored. First, examination of loss and crosstalk performance in silicon nitride over SOI waveguide crossings yields insight into the feasibility of 3D optical interconnects with the rst experimental analysis of such a structure presented herein. A novel measurement platform utilizing a modi ed racetrack resonator is then presented enabling extraction of insertion loss data for highly e cient structures while requiring minimal on-chip area. Finally, pioneering work in understanding the statistical nature of doublet formation in microphotonic resonators is delivered with the resulting impact on resonant device design detailed.

  20. High-power thulium lasers on a silicon photonics platform.

    PubMed

    Li, Nanxi; Purnawirman, P; Su, Zhan; Salih Magden, E; Callahan, Patrick T; Shtyrkova, Katia; Xin, Ming; Ruocco, Alfonso; Baiocco, Christopher; Ippen, Erich P; Kärtner, Franz X; Bradley, Jonathan D B; Vermeulen, Diedrik; Watts, Michael R

    2017-03-15

    Mid-infrared laser sources are of great interest for various applications, including light detection and ranging, spectroscopy, communication, trace-gas detection, and medical sensing. Silicon photonics is a promising platform that enables these applications to be integrated on a single chip with low cost and compact size. Silicon-based high-power lasers have been demonstrated at 1.55 μm wavelength, while in the 2 μm region, to the best of our knowledge, high-power, high-efficiency, and monolithic light sources have been minimally investigated. In this Letter, we report on high-power CMOS-compatible thulium-doped distributed feedback and distributed Bragg reflector lasers with single-mode output powers up to 267 and 387 mW, and slope efficiencies of 14% and 23%, respectively. More than 70 dB side-mode suppression ratio is achieved for both lasers. This work extends the applicability of silicon photonic microsystems in the 2 μm region.

  1. Design and simulation of silicon photonic schematics and layouts

    NASA Astrophysics Data System (ADS)

    Chrostowski, Lukas; Lu, Zeqin; Flueckiger, Jonas; Wang, Xu; Klein, Jackson; Liu, Amy; Jhoja, Jaspreet; Pond, James

    2016-05-01

    Electronic circuit designers commonly start their design process with a schematic, namely an abstract representation of the physical circuit. In integrated photonics on the other hand, it is common for the design to begin at the physical component level, and create a layout by connecting components with interconnects. In this paper, we discuss how to create a schematic from the physical layout via netlist extraction, which enables circuit simulations. Post-layout extraction can also be used to predict how fabrication variability and non-uniformity will impact circuit performance. This is based on the component position information, compact models that are parameterized for dimensional variations, and manufacturing variability models such as a simulated wafer thickness map. This final step is critical in understanding how real-world silicon photonic circuits will behave. We present an example based on treating the ring resonator as a circuit. A silicon photonics design kit, as described here, is available for download at http://github.com/lukasc-ubc/SiEPIC_EBeam_PDK.

  2. Possibility of gated silicon drift detector detecting hard x-ray

    NASA Astrophysics Data System (ADS)

    Matsuura, Hideharu; Fukushima, Shinya; Sakurai, Shungo; Ishikawa, Shohei; Takeshita, Akinobu; Hidaka, Atsuki

    2015-08-01

    One of the authors has proposed a simple-structure silicon X-ray detector (gated silicon drift detector: GSDD), whose structure is much simpler than commercial silicon drift detectors (SDDs). SDDs contain multiple built-in metal-oxide-semiconductor field-effect transistors (MOSFETs) or implanted resistors, whose fabrication processes lower the yield rate of detectors, and also require at least two high-voltage sources. On the other hand, GSDDs do not contain built-in MOSFETs or implanted resistors. Moreover, GSDDs require only one high-voltage source. Therefore, GSDDs greatly reduce the cost of the X-ray detection system. We fabricated prototype GSDDs that contained 0.625-mm-thick Si substrates with an active area of 18 mm2, operated by Peltier cooling and a single voltage source. Its energy resolution at 5.9 keV from an 55Fe source was 145 eV at -38°C and -90°V. Thicker Si substrates are required to enhance its absorption of X-rays. To detect X-ray photons with energies up to 77 keV for X-ray absorbance higher than 15%, we simulate the electric potential distribution in GSDDs with Si thicknesses from 0.625 to 3.0 mm. We obtain an adequate electric potential distribution in the thicknesses of up to 3.0 mm, and the capacitance of the GSDD remains small and its X-ray count rate remain high. The high reverse bias required in the 3-mm-thick GSDD was a third of that in a 3-mm-thick pin diode.

  3. Stress induced long wavelength photoconductivity in doped silicon infrared detectors

    NASA Technical Reports Server (NTRS)

    Houck, J. R.

    1982-01-01

    The long wavelength cutoff of a Si:P detector was extended to 34 microns by the application of a uniaxial stress. An unstressed Si:P photoconductive detector responds to photons of up to 28 microns wavelength. By applying a uniaxial stress to a detector along the /100/ crystal axis, the response was extended to approximately 34 microns. The /100/ axis was chosen as the stress direction because theoretical calculations predicted that such a stress extends the wavelength response more than one along the /110/ axis. These theoretical calculations were based upon fits to experimental data obtained at stresses of up to approximately kbar, and indicated that the extension in wavelength response continues to increase at much larger stresses.

  4. Silicon photon-counting avalanche diodes for single-molecule fluorescence spectroscopy

    PubMed Central

    Michalet, Xavier; Ingargiola, Antonino; Colyer, Ryan A.; Scalia, Giuseppe; Weiss, Shimon; Maccagnani, Piera; Gulinatti, Angelo; Rech, Ivan; Ghioni, Massimo

    2014-01-01

    Solution-based single-molecule fluorescence spectroscopy is a powerful experimental tool with applications in cell biology, biochemistry and biophysics. The basic feature of this technique is to excite and collect light from a very small volume and work in a low concentration regime resulting in rare burst-like events corresponding to the transit of a single molecule. Detecting photon bursts is a challenging task: the small number of emitted photons in each burst calls for high detector sensitivity. Bursts are very brief, requiring detectors with fast response time and capable of sustaining high count rates. Finally, many bursts need to be accumulated to achieve proper statistical accuracy, resulting in long measurement time unless parallelization strategies are implemented to speed up data acquisition. In this paper we will show that silicon single-photon avalanche diodes (SPADs) best meet the needs of single-molecule detection. We will review the key SPAD parameters and highlight the issues to be addressed in their design, fabrication and operation. After surveying the state-of-the-art SPAD technologies, we will describe our recent progress towards increasing the throughput of single-molecule fluorescence spectroscopy in solution using parallel arrays of SPADs. The potential of this approach is illustrated with single-molecule Förster resonance energy transfer measurements. PMID:25309114

  5. Hybrid III-V/silicon SOA for photonic integrated circuits

    NASA Astrophysics Data System (ADS)

    Kaspar, P.; Brenot, R.; Le Liepvre, A.; Accard, A.; Make, D.; Levaufre, G.; Girard, N.; Lelarge, F.; Duan, G.-H.; Olivier, S.; Jany, Christophe; Kopp, C.; Menezo, S.

    2014-11-01

    Silicon photonics has reached a considerable level of maturity, and the complexity of photonic integrated circuits (PIC) is steadily increasing. As the number of components in a PIC grows, loss management becomes more and more important. Integrated semiconductor optical amplifiers (SOA) will be crucial components in future photonic systems for loss compensation. In addition, there are specific applications, where SOAs can play a key role beyond mere loss compensation, such as modulated reflective SOAs in carrier distributed passive optical networks or optical gates in packet switching. It is, therefore, highly desirable to find a generic integration platform that includes the possibility of integrating SOAs on silicon. Various methods are currently being developed to integrate light emitters on silicon-on-insulator (SOI) waveguide circuits. Many of them use III-V materials for the hybrid integration on SOI. Various types of lasers have been demonstrated by several groups around the globe. In some of the integration approaches, SOAs can be implemented using essentially the same technology as for lasers. In this paper we will focus on SOA devices based on a hybrid integration approach where III-V material is bonded on SOI and a vertical optical mode transfer is used to couple light between SOI waveguides and guides formed in bonded III-V semiconductor layers. In contrast to evanescent coupling schemes, this mode transfer allows for a higher confinement factor in the gain material and thus for efficient light amplification over short propagation distances. We will outline the fabrication process of our hybrid components and present some of the most interesting results from a fabricated and packaged hybrid SOA.

  6. Laminated Amorphous Silicon Neutron Detector (pre-print)

    SciTech Connect

    Harry McHugh, Howard Branz, Paul Stradins, and Yueqin Xu

    2009-01-29

    An internal R&D project was conducted at the Special Technologies Laboratory (STL) of National Security Technologies, LLC (NSTec), to determine the feasibility of developing a multi-layer boron-10 based thermal neutron detector using the amorphous silicon (AS) technology currently employed in the manufacture of liquid crystal displays. The boron-10 neutron reaction produces an alpha that can be readily detected. A single layer detector, limited to an approximately 2-micron-thick layer of boron, has a theoretical sensitivity of about 3%; hence a thin multi-layer device with high sensitivity can theoretically be manufactured from single layer detectors. Working with National Renewable Energy Laboratory (NREL), an AS PiN diode alpha detector was developed and tested. The PiN diode was deposited on a boron-10 coated substrate. Testing confirmed that the neutron sensitivity was nearly equal to the theoretical value of 3%. However, adhesion problems with the boron-10 coating prevented successful development of a prototype detector. Future efforts will include boron deposition work and development of integrated AS signal processing circuitry.

  7. DLTS measurement of energetic levels, generated in silicon detectors

    NASA Astrophysics Data System (ADS)

    Bosetti, M.; Croitoru, N.; Furetta, C.; Leroy, C.; Pensotti, S.; Rancoita, P. G.; Rattaggi, M.; Redaelli, M.; Rizzatti, M.; Seidman, A.

    1995-02-01

    DLTS (deep level transient spectroscopy) measurements were performed on irradiated Si detectors to record data on the energetic levels traps generated by neutrons. For moderate fluences (φ) of neutrons ( φ < 10 12 n cm -2) electron and hole trap levels have been detected. Four electron trap levels were found for both FZ (float zone) and MCZ (magnetic Czochralsky) types of Si detectors but only two hole trap levels in FZ and one in MCZ detectors. This indicates that the type of silicon has an influence on the traps generated by irradiation. From the values obtained for the relative concentration of E1 centers in MCZ and FZ detectors, it results that the E1 centers are oxygen and not vacancy limited. Since the concentration of the E2, E3, and E4 levels are larger in FZ than in MCZ detectors, it may be assumed that the "gettering effect" can control the formation of deeper traps. Filling pulses were applied for various voltages and at the flat band filling voltage, maximum ratio of {N t}/{N} of the E1 center was achieved. This may indicate that the concentration of E1 centers, near the p +-n interface, can be larger than in the rest of the junction.

  8. The Belle II silicon vertex detector assembly and mechanics

    NASA Astrophysics Data System (ADS)

    Adamczyk, K.; Aihara, H.; Angelini, C.; Aziz, T.; Babu, V.; Bacher, S.; Bahinipati, S.; Barberio, E.; Baroncelli, Ti.; Baroncelli, To.; Basith, A. K.; Batignani, G.; Bauer, A.; Behera, P. K.; Bergauer, T.; Bettarini, S.; Bhuyan, B.; Bilka, T.; Bosi, F.; Bosisio, L.; Bozek, A.; Buchsteiner, F.; Bulla, L.; Casarosa, G.; Ceccanti, M.; Červenkov, D.; Chendvankar, S. R.; Dash, N.; Divekar, S. T.; Doležal, Z.; Dutta, D.; Forti, F.; Friedl, M.; Hara, K.; Higuchi, T.; Horiguchi, T.; Irmler, C.; Ishikawa, A.; Jeon, H. B.; Joo, C. W.; Kandra, J.; Kang, K. H.; Kato, E.; Kawasaki, T.; Kodyš, P.; Kohriki, T.; Koike, S.; Kolwalkar, M. M.; Kvasnička, P.; Lanceri, L.; Lettenbicher, J.; Lueck, T.; Maki, M.; Mammini, P.; Mayekar, S. N.; Mohanty, G. B.; Mohanty, S.; Morii, T.; Nakamura, K. R.; Natkaniec, Z.; Negishi, K.; Nisar, N. K.; Onuki, Y.; Ostrowicz, W.; Paladino, A.; Paoloni, E.; Park, H.; Pilo, F.; Profeti, A.; Rashevskaya, I.; Rao, K. K.; Rizzo, G.; Rozanska, M.; Sasaki, J.; Sato, N.; Schultschik, S.; Schwanda, C.; Seino, Y.; Shimizu, N.; Stypula, J.; Suzuki, J.; Tanaka, S.; Tanida, K.; Taylor, G. N.; Thalmeier, R.; Thomas, R.; Tsuboyama, T.; Uozumi, S.; Urquijo, P.; Vitale, L.; Watanuki, S.; Watson, I. J.; Webb, J.; Wiechczynski, J.; Williams, S.; Würkner, B.; Yamamoto, H.; Yin, H.; Yoshinobu, T.

    2017-02-01

    The Belle II experiment at the asymmetric SuperKEKB collider in Japan will operate at an instantaneous luminosity approximately 50 times greater than its predecessor (Belle). The central feature of the experiment is a vertex detector comprising two layers of pixelated silicon detectors (PXD) and four layers of double-sided silicon microstrip detectors (SVD). One of the key measurements for Belle II is CP violation asymmetry in the decays of beauty and charm hadrons, which hinges on a precise charged-track vertex determination and low-momentum track measurement. Towards this goal, a proper assembly of the SVD components with precise alignment ought to be performed and the geometrical tolerances should be checked to fall within the design limits. We present an overview of the assembly procedure that is being followed, which includes the precision gluing of the SVD module components, wire-bonding of the various electrical components, and precision 3D coordinate measurements of the final SVD modules. Finally, some results from the latest test-beam are reported.

  9. Use of silicon pixel detectors in double electron capture experiments

    NASA Astrophysics Data System (ADS)

    Cermak, P.; Stekl, I.; Shitov, Yu A.; Mamedov, F.; Rukhadze, E. N.; Jose, J. M.; Cermak, J.; Rukhadze, N. I.; Brudanin, V. B.; Loaiza, P.

    2011-01-01

    A novel experimental approach to search for double electron capture (EC/EC) is discussed in this article. R&D for a new generation EC/EC spectrometer based on silicon pixel detectors (SPDs) has been conducted since 2009 for an upgrade of the TGV experiment. SPDs built on Timepix technology with a spectroscopic readout from each individual pixel are an effective tool to detect the 2νEC/EC signature of the two low energy X-rays hitting two separate pixels. The ability of SPDs to indentify α/β/γ particles and localize them precisely leads to effective background discrimination and thus considerable improvement of the signal-to-background ratio (S/B). A multi-SPD system, called a Silicon Pixel Telescope (SPT), is planned based on the experimental approach of the TGV calorimeter which measures thin foils of enriched EC/EC-isotope sandwiched between HPGe detectors working in coincidence mode. The sources of SPD internal background have been identified by measuring SPD radiopurity with a low-background HPGe detector as well as by long-term SPD background runs in the Modane underground laboratory (LSM, France), and results of these studies are presented.

  10. Compact silicon photonic resonance-sssisted variable optical attenuator.

    PubMed

    Wang, Xiaoxi; Aguinaldo, Ryan; Lentine, Anthony; DeRose, Christopher; Starbuck, Andrew L; Trotter, Douglas; Pomerene, Andrew; Mookherjea, Shayan

    2016-11-28

    A two-part silicon photonic variable optical attenuator is demonstrated in a compact footprint which can provide a high extinction ratio at wavelengths between 1520 nm and 1620 nm. The device was made by following the conventional p-i-n waveguide section by a high-extinction-ratio second-order microring filter section. The rings provide additional on-off contrast by utilizing a thermal resonance shift, which harvested the heat dissipated by current injection in the p-i-n junction. We derive and discuss a simple thermal-resistance model in explanation of these effects.

  11. Compact silicon photonic resonance-assisted variable optical attenuator

    DOE PAGES

    Wang, Xiaoxi; Aguinaldo, Ryan; Lentine, Anthony; ...

    2016-11-17

    Here, a two-part silicon photonic variable optical attenuator is demonstrated in a compact footprint which can provide a high extinction ratio at wavelengths between 1520 nm and 1620 nm. The device was made by following the conventional p-i-n waveguide section by a high-extinction-ratio second-order microring filter section. The rings provide additional on-off contrast by utilizing a thermal resonance shift, which harvested the heat dissipated by current injection in the p-i-n junction. Finally, we derive and discuss a simple thermal-resistance model in explanation of these effects.

  12. A review on single photon sources in silicon carbide

    NASA Astrophysics Data System (ADS)

    Lohrmann, A.; Johnson, B. C.; McCallum, J. C.; Castelletto, S.

    2017-03-01

    This paper summarizes key findings in single-photon generation from deep level defects in silicon carbide (SiC) and highlights the significance of these individually addressable centers for emerging quantum applications. Single photon emission from various defect centers in both bulk and nanostructured SiC are discussed as well as their formation and possible integration into optical and electrical devices. The related measurement protocols, the building blocks of quantum communication and computation network architectures in solid state systems, are also summarized. This includes experimental methodologies developed for spin control of different paramagnetic defects, including the measurement of spin coherence times. Well established doping, and micro- and nanofabrication procedures for SiC may allow the quantum properties of paramagnetic defects to be electrically and mechanically controlled efficiently. The integration of single defects into SiC devices is crucial for applications in quantum technologies and we will review progress in this direction.

  13. Tolerance analysis for efficient MMI devices in silicon photonics

    NASA Astrophysics Data System (ADS)

    Vázquez, Carmen; Tapetado, Alberto; Orcutt, Jason; Meng, Huaiyu Charles; Ram, Rajeev

    2014-03-01

    Silicon is considered a promising platform for photonic integrated circuits as they can be fabricated in state-of-the-art electronics foundaries with integrated CMOS electronics. While much of the existing work on CMOS photonics has used directional couplers for power splitting, multimode interference (MMI) devices may have relaxed fabrication requirements and smaller footprints, potentially energy efficient designs. They have already been used as 1x2 splitters, 2x1 combiners in Quadrature Phase Shift Keying modulators, and 3-dB couplers among others. In this work, 3-dB, butterfly and cross MMI couplers are realized on bulk CMOS technology. Footprints from around 40um2 to 200 um2 are obtained. MMI tolerances to manufacturing process and bandwidth are analyzed and tested showing the robustness of the MMI devices.

  14. A review on single photon sources in silicon carbide.

    PubMed

    Lohrmann, A; Johnson, B C; McCallum, J C; Castelletto, S

    2017-03-01

    This paper summarizes key findings in single-photon generation from deep level defects in silicon carbide (SiC) and highlights the significance of these individually addressable centers for emerging quantum applications. Single photon emission from various defect centers in both bulk and nanostructured SiC are discussed as well as their formation and possible integration into optical and electrical devices. The related measurement protocols, the building blocks of quantum communication and computation network architectures in solid state systems, are also summarized. This includes experimental methodologies developed for spin control of different paramagnetic defects, including the measurement of spin coherence times. Well established doping, and micro- and nanofabrication procedures for SiC may allow the quantum properties of paramagnetic defects to be electrically and mechanically controlled efficiently. The integration of single defects into SiC devices is crucial for applications in quantum technologies and we will review progress in this direction.

  15. Photonic porous silicon as a pH sensor.

    PubMed

    Pace, Stephanie; Vasani, Roshan B; Zhao, Wei; Perrier, Sébastien; Voelcker, Nicolas H

    2014-01-01

    Chronic wounds do not heal within 3 months, and during the lengthy healing process, the wound is invariably exposed to bacteria, which can colonize the wound bed and form biofilms. This alters the wound metabolism and brings about a change of pH. In this work, porous silicon photonic films were coated with the pH-responsive polymer poly(2-diethylaminoethyl acrylate). We demonstrated that the pH-responsive polymer deposited on the surface of the photonic film acts as a barrier to prevent water from penetrating inside the porous matrix at neutral pH. Moreover, the device demonstrated optical pH sensing capability visible by the unaided eye.

  16. Photonic porous silicon as a pH sensor

    NASA Astrophysics Data System (ADS)

    Pace, Stephanie; Vasani, Roshan B.; Zhao, Wei; Perrier, Sébastien; Voelcker, Nicolas H.

    2014-08-01

    Chronic wounds do not heal within 3 months, and during the lengthy healing process, the wound is invariably exposed to bacteria, which can colonize the wound bed and form biofilms. This alters the wound metabolism and brings about a change of pH. In this work, porous silicon photonic films were coated with the pH-responsive polymer poly(2-diethylaminoethyl acrylate). We demonstrated that the pH-responsive polymer deposited on the surface of the photonic film acts as a barrier to prevent water from penetrating inside the porous matrix at neutral pH. Moreover, the device demonstrated optical pH sensing capability visible by the unaided eye.

  17. Photon counting photodiode array detector for far ultraviolet (FUV) astronomy

    NASA Technical Reports Server (NTRS)

    Hartig, G. F.; Moos, H. W.; Pembroke, R.; Bowers, C.

    1982-01-01

    A compact, stable, single-stage intensified photodiode array detector designed for photon-counting, far ultraviolet astronomy applications employs a saturable, 'C'-type MCP (Galileo S. MCP 25-25) to produce high gain pulses with a narrowly peaked pulse height distribution. The P-20 output phosphor exhibits a very short decay time, due to the high current density of the electron pulses. This intensifier is being coupled to a self-scanning linear photodiode array which has a fiber optic input window which allows direct, rigid mechanical coupling with minimal light loss. The array was scanned at a 250 KHz pixel rate. The detector exhibits more than adequate signal-to-noise ratio for pulse counting and event location. Previously announced in STAR as N82-19118

  18. Photon and jet physics at the Collider Detector at Fermilab

    SciTech Connect

    J. Dittmann

    2002-10-25

    We summarize recent Run 1 photon and jet measurements from p{bar b} collisions at {radical}s = 0.63 TeV and 1.8 TeV using data collected at the Collider Detector at Fermilab (CDF). First Run 2 results at {radical}s = 1.96 TeV are also presented together with predictions of the kinematic reach accessible with 15 fb{sup -1} of Run 2 data. Data are compared to the predictions of Quantum Chromodynamics (QCD).

  19. Optimised quantum hacking of superconducting nanowire single-photon detectors

    NASA Astrophysics Data System (ADS)

    Tanner, Michael G.; Makarov, Vadim; Hadfield, Robert H.

    2014-03-01

    We explore bright-light control of superconducting nanowire single-photon detectors (SNSPDs) in the shunted configuration (a practical measure to avoid latching). In an experiment, we simulate an illumination pattern the SNSPD would receive in a typical quantum key distribution system under hacking attack. We show that it effectively blinds and controls the SNSPD. The transient blinding illumination lasts for a fraction of a microsecond and produces several deterministic fake clicks during this time. This attack does not lead to elevated timing jitter in the spoofed output pulse, and hence does not introduce significant errors. Five different SNSPD chip designs were tested. We consider possible countermeasures to this attack.

  20. Optimised quantum hacking of superconducting nanowire single-photon detectors.

    PubMed

    Tanner, Michael G; Makarov, Vadim; Hadfield, Robert H

    2014-03-24

    We explore bright-light control of superconducting nanowire single-photon detectors (SNSPDs) in the shunted configuration (a practical measure to avoid latching). In an experiment, we simulate an illumination pattern the SNSPD would receive in a typical quantum key distribution system under hacking attack. We show that it effectively blinds and controls the SNSPD. The transient blinding illumination lasts for a fraction of a microsecond and produces several deterministic fake clicks during this time. This attack does not lead to elevated timing jitter in the spoofed output pulse, and hence does not introduce significant errors. Five different SNSPD chip designs were tested. We consider possible countermeasures to this attack.

  1. Discrimination of binary coherent states using a homodyne detector and a photon number resolving detector

    SciTech Connect

    Wittmann, Christoffer; Sych, Denis; Leuchs, Gerd; Takeoka, Masahiro

    2010-06-15

    We investigate quantum measurement strategies capable of discriminating two coherent states probabilistically with significantly smaller error probabilities than can be obtained using nonprobabilistic state discrimination. We apply a postselection strategy to the measurement data of a homodyne detector as well as a photon number resolving detector in order to lower the error probability. We compare the two different receivers with an optimal intermediate measurement scheme where the error rate is minimized for a fixed rate of inconclusive results. The photon number resolving (PNR) receiver is experimentally demonstrated and compared to an experimental realization of a homodyne receiver with postselection. In the comparison, it becomes clear that the performance of the PNR receiver surpasses the performance of the homodyne receiver, which we prove to be optimal within any Gaussian operations and conditional dynamics.

  2. The silicon vertex detector of the Belle II experiment

    NASA Astrophysics Data System (ADS)

    Adamczyk, K.; Aihara, H.; Angelini, C.; Aziz, T.; Babu, V.; Bacher, S.; Bahinipati, S.; Barberio, E.; Baroncelli, T.; Basith, A. K.; Batignani, G.; Bauer, A.; Behera, P. K.; Bergauer, T.; Bettarini, S.; Bhuyan, B.; Bilka, T.; Bosi, F.; Bosisio, L.; Bozek, A.; Buchsteiner, F.; Casarosa, G.; Ceccanti, M.; Červenkov, D.; Chendvankar, S. R.; Dash, N.; Divekar, S. T.; Doležal, Z.; Dutta, D.; Forti, F.; Friedl, M.; Hara, K.; Higuchi, T.; Horiguchi, T.; Irmler, C.; Ishikawa, A.; Jeon, H. B.; Joo, C. W.; Kandra, J.; Kang, K. H.; Kato, E.; Kawasaki, T.; Kodyš, P.; Kohriki, T.; Koike, S.; Kolwalkar, M. M.; Kvasnička, P.; Lanceri, L.; Lettenbicher, J.; Mammini, P.; Mayekar, S. N.; Mohanty, G. B.; Mohanty, S.; Morii, T.; Nakamura, K. R.; Natkaniec, Z.; Negishi, K.; Nisar, N. K.; Onuki, Y.; Ostrowicz, W.; Paladino, A.; Paoloni, E.; Park, H.; Pilo, F.; Profeti, A.; Rao, K. K.; Rashevskaya, I.; Rizzo, G.; Rozanska, M.; Sandilya, S.; Sasaki, J.; Sato, N.; Schultschik, S.; Schwanda, C.; Seino, Y.; Shimizu, N.; Stypula, J.; Tanaka, S.; Tanida, K.; Taylor, G. N.; Thalmeier, R.; Thomas, R.; Tsuboyama, T.; Uozumi, S.; Urquijo, P.; Vitale, L.; Volpi, M.; Watanuki, S.; Watson, I. J.; Webb, J.; Wiechczynski, J.; Williams, S.; Würkner, B.; Yamamoto, H.; Yin, H.; Yoshinobu, T.

    2016-07-01

    The silicon vertex detector of the Belle II experiment, structured in a lantern shape, consists of four layers of ladders, fabricated from two to five silicon sensors. The APV25 readout ASIC chips are mounted on one side of the ladder to minimize the signal path for reducing the capacitive noise; signals from the sensor backside are transmitted to the chip by bent flexible fan-out circuits. The ladder is assembled using several dedicated jigs. Sensor motion on the jig is minimized by vacuum chucking. The gluing procedure provides such a rigid foundation that later leads to the desired wire bonding performance. The full ladder with electrically functional sensors is consistently completed with a fully developed assembly procedure, and its sensor offsets from the design values are found to be less than 200 μm. The potential functionality of the ladder is also demonstrated by the radioactive source test.

  3. CDF run IIb silicon detector: The innermost layer

    SciTech Connect

    Merkel, P.; Azzi, P.; Bacchetta, N.; Bisello, D.; Busetto, G.; Hara, K.; Kim, S.; Manea, C.; Wang, Z.; Behari, S.; Maksimovic, P.; Benjamin, D.; Cabrera, S.; Kruse, M.; Bolla, G.; Bortoletto, D.; Canepa,A.; Fernandez, J.P.; Booth, P.; Cooke, P.; Cascella, M.; Cardoso, G.; Derylo, G.; Flaugher, B.; Hrycyk, M.; Kuznetsova, N.; Lukens, P.; Nelson,T.; Orlov, Y.; Wester, W.; Yun, J.C.; Chertok, M.; Holbrook, B.; Lander,R.; Landry, T.; Pellett, D.; Soha, A.; Yao, W.; Ciobanu, C.I.; Junk, T.; Feng, E.J.; Freeman, J.; Galtieri, L.; Garcia-Sciveres, M.; Haber, C.; Lujan, P.J.; Mandelli, E.; Weber, M.; Zetti, F.; Zimmermann, S.; Goldstein, J.; Harr, R.; Hill, C.; Himmel, A.; Incandela, J.; Stuart, D.; Kobayashi, K.; Nakano, I.; Tanaka, R.; Kong, D.J.; Yang, Y.C.; Lauhakangas, R.; Orava, R.; Osterberg, K.; Lu, R.-S.; Min, S.N.; Okusawa,T.; Yamamoto, K.; Tavi, M.; Zucchelli, S.; Hong, S.C.; Jeon, E.J.; Joo,K.K.; Lee, J.

    2003-10-24

    The innermost layer (L00) of the Run IIa silicon detector of CDF was planned to be replaced for the high luminosity Tevatron upgrade of Run IIb. This new silicon layer (L0) is designed to be a radiation tolerant replacement for the otherwise very similar L00 from Run IIa. The data are read out via long, fine-pitch, low-mass cables allowing the hybrids with the chips to sit at higher z(/spl sim/70 cm), outside of the tracking volume. The design and first results from the prototyping phase are presented. Special focus is placed on the amount and the structure of induced noise as well as signal-to-noise values.

  4. Silicon photodiode as the two-color detector

    NASA Astrophysics Data System (ADS)

    Ponomarev, D. B.; Zakharenko, V. A.

    2015-11-01

    This paper describes a silicon photodiode as the two-color photodetector. The work of one photodiode in two spectral ranges is achieved due to the changes of the spectral sensitivity of the photodiodes in the transition from photodiode mode for photovoltaic in the short circuit mode. On the basis of silicon photodiode FD-256 the layout of the spectral ratio pyrometer was assembled and the results of theoretical calculations was confirmed experimentally. The calculated dependences of the coefficient of error of the spectral ratio pyrometer from temperature reverse voltage 10 and 100 V was presented. The calculated dependence of the instrumental error and the assessment of methodological errors of the proposed photodetector spectral ratio was done. According to the results of the presented research was set the task of development photodiode detectors which change the spectral sensitivity depending on the applied voltage.

  5. GAMBE: multipurpose sandwich detector for neutrons and photons

    NASA Astrophysics Data System (ADS)

    Ahmed, A.; Burdin, S.; Casse, G.; van Zalinge, H.; Powel, S.; Rees, J.; Smith, A.; Tsurin, I.

    2016-10-01

    Detectors made with semiconductors such as silicon can be efficiently used for detecting and imaging neutrons when coated with suitable materials. They detect the charged reaction products resulting from the interaction of thermal neutrons with materials with high capture cross section like 10B, 6Li, and 6LiF. This work describes the performance of a thermal neutron detector system, GAMBE, which is based on silicon sensors and a layer of neutron-sensitive material, such as a lithium fluoride film or a lithium-6 foil, in a sandwich configuration. This arrangement has a total detection efficiency of 4 +/- 2 %, 7 +/- 1 %, and12 +/- 1 % for 7 μm 6LiF film, 40 μm and 70 μm 6Li foil respectively. Also, it enhances the rejection of fake hits using a simple coincidence method. The coincidence that defines a true neutron hit is the simultaneous signal recorded by the two sensors facing the conversion layer (or foil). These coincidences provide a very good method for rejecting the spurious hits coming from gamma-rays, which are usually present in the neutron field under measurement. The GAMBE system yields a rejection factor at the level of 108 allowing very pure neutron detection in high gamma background conditions. However, the price to pay is a reduction of the detection efficiency of 1 +/- 1 % or 0:9 +/- 0:3 % for 7 μm 6LiF film and 40 μm 6Li foil respectively.

  6. DETECTORS AND EXPERIMENTAL METHODS: New test and analysis of position-sensitive-silicon-detector

    NASA Astrophysics Data System (ADS)

    Feng, Lang; Ge, Yu-Cheng; Wang, He; Fan, Feng-Ying; Qiao, Rui; Lu, Fei; Song, Yu-Shou; Zheng, Tao; Ye, Yan-Lin

    2009-01-01

    We have tested and analyzed the properties of two-dimensional Position-Sensitive-silicon-Detector (PSD) with new integrated preamplifiers. The test demonstrates that the best position resolution for 5.5 MeV α particles is 1.7 mm (FWHM), and the best energy resolution is 2.1%, which are notably better than the previously reported results. A scaling formula is introduced to make the absolute position calibration.

  7. Automatic intrinsic calibration of double-sided silicon strip detectors

    NASA Astrophysics Data System (ADS)

    Reese, M.; Gerl, J.; Golubev, P.; Pietralla, N.

    2015-04-01

    A reliable and simple-to-use algorithm was developed for the energy-calibration of double-sided silicon strip detectors (DSSSDs). It works by enforcing mutual consistency of p-side and n-side information for every detected event. The procedure does not rely on a dedicated data set for calibration and is robust enough to work fully automated without human supervision. The method was developed and applied to data from a DSSSD of the Lund-York-Cologne CAlorimeter (LYCCA) for the HISPEC experiment at FAIR. It has been tested on ions in the A ≈ 90 mass range at energies of Ekin ≈ 300 MeV / u.

  8. Improving the neutron-to-photon discrimination capability of detectors used for neutron dosimetry in high energy photon beam radiotherapy.

    PubMed

    Irazola, L; Terrón, J A; Bedogni, R; Pola, A; Lorenzoli, M; Sánchez-Nieto, B; Gómez, F; Sánchez-Doblado, F

    2016-09-01

    The increasing interest of the medical community to radioinduced second malignancies due to photoneutrons in patients undergoing high-energy radiotherapy, has stimulated in recent years the study of peripheral doses, including the development of some dedicated active detectors. Although these devices are designed to respond to neutrons only, their parasitic photon response is usually not identically zero and anisotropic. The impact of these facts on measurement accuracy can be important, especially in points close to the photon field-edge. A simple method to estimate the photon contribution to detector readings is to cover it with a thermal neutron absorber with reduced secondary photon emission, such as a borated rubber. This technique was applied to the TNRD (Thermal Neutron Rate Detector), recently validated for thermal neutron measurements in high-energy photon radiotherapy. The positive results, together with the accessibility of the method, encourage its application to other detectors and different clinical scenarios.

  9. High-fidelity frequency down-conversion of visible entangled photon pairs with superconducting single-photon detectors

    SciTech Connect

    Ikuta, Rikizo; Kato, Hiroshi; Kusaka, Yoshiaki; Yamamoto, Takashi; Imoto, Nobuyuki; Miki, Shigehito; Yamashita, Taro; Terai, Hirotaka; Wang, Zhen; Fujiwara, Mikio; Sasaki, Masahide; Koashi, Masato

    2014-12-04

    We experimentally demonstrate a high-fidelity visible-to-telecommunicationwavelength conversion of a photon by using a solid-state-based difference frequency generation. In the experiment, one half of a pico-second visible entangled photon pair at 780 nm is converted to a 1522-nm photon. Using superconducting single-photon detectors with low dark count rates and small timing jitters, we observed a fidelity of 0.93±0.04 after the wavelength conversion.

  10. Photon-Noise Limited Direct Detector Based on Disorder-Controlled Electron Heating

    NASA Technical Reports Server (NTRS)

    Karasik, B.; McGrath, W.; Gershenson, M.; Sergeev, A.

    1999-01-01

    We present a new concept for a hot-electron direct detector (HEDD) capable of counting single millimeter-wave photons. The detector is based on a transition edge sensor (1-meu size bridge) made form a disordered superconducting film.

  11. Polarization of silicon detectors by minimum ionizing particles

    NASA Astrophysics Data System (ADS)

    Dezillie, B.; Eremin, V.; Li, Z.; Verbitskaya, E.

    2000-10-01

    This work presents quantitative predictions of the properties of highly irradiated (e.g. by high-energy particles, up to an equivalent fluence of 1×10 14 n cm -2) silicon detectors operating at cryogenic temperature. It is shown that the exposure to the Minimum Ionising Particle (MIP) with counting rates of about 10 6 cm -2 s -1 can influence the electric field distribution in the detector's sensitive volume. This change in the electric field distribution and its effect on the charge collection efficiency are discussed in the frame of a model based on trapping of carriers generated by MIPs. The experiment was performed at 87 K with an infrared (1030 nm) laser to simulate MIPs.

  12. Use of Silicon Photomultiplier in LBL Cosmic Tay Detector

    NASA Astrophysics Data System (ADS)

    Osornio, Leo

    2012-10-01

    During a summer internship program at Hartnell Community College our team successfully constructed two complementary cosmic ray experiments. The first employed NIM electronic modules the second constructed as per specifications of a circuit board designed by the Berkeley Lab Cosmic Ray Telescope Project (http://cosmic.lbl.gov/). During the following summer at Lawrence Berkeley National Laboratory, we worked on optimizing the performance of a group of Berkeley Lab Detector and developed tools to measure its performance. The next phase was exploring whether Silicon Photomultiplier (SiPM) can be used to replace the phototube of the Berkeley Detector. Data will be presented from both summers including the dependence of the cosmic ray flux on the separation and polar angle of scintillator paddles, as well as the results from our SiPM tests. Finally, I will include prospects for curriculum development using the cosmic ray experiments.

  13. Multi-pinhole SPECT Imaging with Silicon Strip Detectors

    PubMed Central

    Peterson, Todd E.; Shokouhi, Sepideh; Furenlid, Lars R.; Wilson, Donald W.

    2010-01-01

    Silicon double-sided strip detectors offer outstanding instrinsic spatial resolution with reasonable detection efficiency for iodine-125 emissions. This spatial resolution allows for multiple-pinhole imaging at low magnification, minimizing the problem of multiplexing. We have conducted imaging studies using a prototype system that utilizes a detector of 300-micrometer thickness and 50-micrometer strip pitch together with a 23-pinhole collimator. These studies include an investigation of the synthetic-collimator imaging approach, which combines multiple-pinhole projections acquired at multiple magnifications to obtain tomographic reconstructions from limited-angle data using the ML-EM algorithm. Sub-millimeter spatial resolution was obtained, demonstrating the basic validity of this approach. PMID:20953300

  14. Magnetically-actuated, bead-enhanced silicon photonic immunosensor

    PubMed Central

    Valera, Enrique; McClellan, Melinda S.; Bailey, Ryan C.

    2015-01-01

    Magnetic actuation has been introduced to an optical immunosensor technology resulting in improvements in both rapidity and limit of detection for an assay quantitating low concentrations of a representative protein biomarker. For purposes of demonstration, an assay was designed for monocyte chemotactic protein 1 (MCP-1), a small cytokine which regulates migration and infiltration of monocytes and macrophages, and is an emerging biomarker for several diseases. The immunosensor is based on arrays of highly multiplexed silicon photonic microring resonators. A one-step sandwich immunoassay was performed and the signal was further enhanced through a tertiary recognition event between biotinylated tracer antibodies and streptavidin-coated magnetic beads. By integrating a magnet under the sensor chip, magnetic beads were rapidly directed towards the sensor surface resulting in improved assay performance metrics. Notably, the time required in the bead binding step was reduced by a factor of 11 (4 vs 45 min), leading to an overall decrease in assay time from 73 min to 32 min. The magnetically-actuated assay also lowered the limit of detection (LOD) for MCP-1 from 124 pg mL−1 down to 57 pg mL−1. In sum, the addition of magnetic actuation into bead-enhanced sandwich assays on a silicon photonic biosensor platform might facilitate improved detection of biomarkers in point-of-care diagnostics settings. PMID:26528374

  15. Label-free virus detection using silicon photonic microring resonators.

    PubMed

    McClellan, Melinda S; Domier, Leslie L; Bailey, Ryan C

    2012-01-15

    Viruses represent a continual threat to humans through a number of mechanisms, which include disease, bioterrorism, and destruction of both plant and animal food resources. Many contemporary techniques used for the detection of viruses and viral infections suffer from limitations such as the need for extensive sample preparation or the lengthy window between infection and measurable immune response, for serological methods. In order to develop a method that is fast, cost-effective, and features reduced sample preparation compared to many other virus detection methods, we report the application of silicon photonic microring resonators for the direct, label-free detection of intact viruses in both purified samples as well as in a complex, real-world analytical matrix. As a model system, we demonstrate the quantitative detection of Bean pod mottle virus, a pathogen of great agricultural importance, with a limit of detection of 10 ng/mL. By simply grinding a small amount of leaf sample in buffer with a mortar and pestle, infected leaves can be identified over a healthy control with a total analysis time of less than 45 min. Given the inherent scalability and multiplexing capability of the semiconductor-based technology, we feel that silicon photonic microring resonators are well-positioned as a promising analytical tool for a number of viral detection applications.

  16. Maximizing Photoluminescence Extraction in Silicon Photonic Crystal Slabs

    PubMed Central

    Mahdavi, Ali; Sarau, George; Xavier, Jolly; Paraïso, Taofiq K.; Christiansen, Silke; Vollmer, Frank

    2016-01-01

    Photonic crystal modes can be tailored for increasing light matter interactions and light extraction efficiencies. These PhC properties have been explored for improving the device performance of LEDs, solar cells and precision biosensors. Tuning the extended band structure of 2D PhC provides a means for increasing light extraction throughout a planar device. This requires careful design and fabrication of PhC with a desirable mode structure overlapping with the spectral region of emission. We show a method for predicting and maximizing light extraction from 2D photonic crystal slabs, exemplified by maximizing silicon photoluminescence (PL). Systematically varying the lattice constant and filling factor, we predict the increases in PL intensity from band structure calculations and confirm predictions in micro-PL experiments. With the near optimal design parameters of PhC, we demonstrate more than 500-fold increase in PL intensity, measured near band edge of silicon at room temperature, an enhancement by an order of magnitude more than what has been reported. PMID:27113674

  17. Maximizing Photoluminescence Extraction in Silicon Photonic Crystal Slabs.

    PubMed

    Mahdavi, Ali; Sarau, George; Xavier, Jolly; Paraïso, Taofiq K; Christiansen, Silke; Vollmer, Frank

    2016-04-26

    Photonic crystal modes can be tailored for increasing light matter interactions and light extraction efficiencies. These PhC properties have been explored for improving the device performance of LEDs, solar cells and precision biosensors. Tuning the extended band structure of 2D PhC provides a means for increasing light extraction throughout a planar device. This requires careful design and fabrication of PhC with a desirable mode structure overlapping with the spectral region of emission. We show a method for predicting and maximizing light extraction from 2D photonic crystal slabs, exemplified by maximizing silicon photoluminescence (PL). Systematically varying the lattice constant and filling factor, we predict the increases in PL intensity from band structure calculations and confirm predictions in micro-PL experiments. With the near optimal design parameters of PhC, we demonstrate more than 500-fold increase in PL intensity, measured near band edge of silicon at room temperature, an enhancement by an order of magnitude more than what has been reported.

  18. Forked grating coupler optical vortex beam interface for silicon photonics

    NASA Astrophysics Data System (ADS)

    Nadovich, Christopher T.; Kosciolek, Derek J.; Jemison, William D.; Crouse, David T.

    2016-09-01

    The forked grating coupler (FGC) is a novel low-profile device compatible with silicon photonics that is capable of sensitive detection or efficient radiation of Optical Vortex (OV) light beams conveying orbital optical angular momentum (OAM). The FGC device combines the idea of a Bragg coupler with the forked hologram to create an integrated optics device that can selectively and efficiently couple selected optical vortex modes at near-normal incidence into planar confined dielectric waveguide modes of a photonic IC. FGCs retain many of the advantages of Bragg couplers, including convenience of placement and fabrication, reasonable bandwidth, small size, and CMOS process compatibility. In this work, prototype designs of FGC structures for 1550 nm wavelength have been developed for implementation on silicon on insulator (SOI) substrate. Fully vectorial three-dimensional (3D) electromagnetic simulation has allowed performance to be optimized over a range of structural parameters. Results have been evaluated against optical performance metrics including overall efficiency, mode match efficiency, and crosstalk between OV modes. Candidate FGC devices have been fabricated on SOI with e-beam lithography and tested optically. Tolerance to etch depth error has been evaluated.

  19. Broadband illumination of superconducting pair breaking photon detectors

    NASA Astrophysics Data System (ADS)

    Guruswamy, T.; Goldie, D. J.; Withington, S.

    2016-04-01

    Understanding the detailed behaviour of superconducting pair breaking photon detectors such as Kinetic Inductance Detectors (KIDs) requires knowledge of the nonequilibrium quasiparticle energy distributions. We have previously calculated the steady state distributions resulting from uniform absorption of monochromatic sub gap and above gap frequency radiation by thin films. In this work, we use the same methods to calculate the effect of illumination by broadband sources, such as thermal radiation from astrophysical phenomena or from the readout system. Absorption of photons at multiple above gap frequencies is shown to leave unchanged the structure of the quasiparticle energy distribution close to the superconducting gap. Hence for typical absorbed powers, we find the effects of absorption of broadband pair breaking radiation can simply be considered as the sum of the effects of absorption of many monochromatic sources. Distribution averaged quantities, like quasiparticle generation efficiency η, match exactly a weighted average over the bandwidth of the source of calculations assuming a monochromatic source. For sub gap frequencies, however, distributing the absorbed power across multiple frequencies does change the low energy quasiparticle distribution. For moderate and high absorbed powers, this results in a significantly larger η-a higher number of excess quasiparticles for a broadband source compared to a monochromatic source of equal total absorbed power. Typically in KIDs the microwave power absorbed has a very narrow bandwidth, but in devices with broad resonance characteristics (low quality factors), this increase in η may be measurable.

  20. Photonic crystal enhanced silicon cell based thermophotovoltaic systems.

    PubMed

    Yeng, Yi Xiang; Chan, Walker R; Rinnerbauer, Veronika; Stelmakh, Veronika; Senkevich, Jay J; Joannopoulos, John D; Soljacic, Marin; Čelanović, Ivan

    2015-02-09

    We report the design, optimization, and experimental results of large area commercial silicon solar cell based thermophotovoltaic (TPV) energy conversion systems. Using global non-linear optimization tools, we demonstrate theoretically a maximum radiative heat-to-electricity efficiency of 6.4% and a corresponding output electrical power density of 0.39 W cm(-2) at temperature T = 1660 K when implementing both the optimized two-dimensional (2D) tantalum photonic crystal (PhC) selective emitter, and the optimized 1D tantalum pentoxide - silicon dioxide PhC cold-side selective filter. In addition, we have developed an experimental large area TPV test setup that enables accurate measurement of radiative heat-to-electricity efficiency for any emitter-filter-TPV cell combination of interest. In fact, the experimental results match extremely well with predictions of our numerical models. Our experimental setup achieved a maximum output electrical power density of 0.10W cm(-2) and radiative heat-to-electricity efficiency of 1.18% at T = 1380 K using commercial wafer size back-contacted silicon solar cells.

  1. Sub-100-nanosecond thermal reconfiguration of silicon photonic devices.

    PubMed

    Atabaki, Amir H; Eftekhar, Ali A; Yegnanarayanan, Siva; Adibi, Ali

    2013-07-01

    One of the limitations of thermal reconfiguration in silicon photonics is its slow response time. At the same time, there is a tradeoff between the reconfiguration speed and power consumption in conventional reconfiguration schemes that poses a challenge in improving the performance of microheaters. In this work, we theoretically and experimentally demonstrate that the high thermal conductivity of silicon can be exploited to tackle this tradeoff through direct pulsed excitation of the device silicon layer. We demonstrate 85 ns reconfiguration of 4 µm diameter microdisks, which is one order of magnitude improvement over the conventional microheaters. At the same time, 2.06 nm/mW resonance wavelength shift is achieved in these devices, which is in a par with the best microheater architectures optimized for low-power operation. We also present a system-level model that precisely describes the response of the demonstrated microheaters. A differentially addressed optical switch is also demonstrated that shows the possibility of switching in opposite directions (i.e., OFF-to-ON and ON-to-OFF) using the proposed reconfiguration scheme.

  2. Hydrogen induced optically-active defects in silicon photonic nanocavities.

    PubMed

    Boninelli, S; Franzò, G; Cardile, P; Priolo, F; Lo Savio, R; Galli, M; Shakoor, A; O'Faolain, L; Krauss, T F; Vines, L; Svensson, B G

    2014-04-21

    We demonstrate intense room temperature photoluminescence (PL) from optically active hydrogen- related defects incorporated into crystalline silicon. Hydrogen was incorporated into the device layer of a silicon on insulator (SOI) wafer by two methods: hydrogen plasma treatment and ion implantation. The room temperature PL spectra show two broad PL bands centered at 1300 and 1500 nm wavelengths: the first one relates to implanted defects while the other band mainly relates to the plasma treatment. Structural characterization reveals the presence of nanometric platelets and bubbles and we attribute different features of the emission spectrum to the presence of these different kind of defects. The emission is further enhanced by introducing defects into photonic crystal (PhC) nanocavities. Transmission electron microscopy analyses revealed that the isotropicity of plasma treatment causes the formation of a higher defects density around the whole cavity compared to the ion implantation technique, while ion implantation creates a lower density of defects embedded in the Si layer, resulting in a higher PL enhancement. These results further increase the understanding of the nature of optically active hydrogen defects and their relation with the observed photoluminescence, which will ultimately lead to the development of intense and tunable crystalline silicon light sources at room temperature.

  3. Porous silicon photonic crystals for detection of infections

    NASA Astrophysics Data System (ADS)

    Gupta, B.; Guan, B.; Reece, P. J.; Gooding, J. J.

    2012-10-01

    In this paper we demonstrate the possibility of modifying porous silicon (PSi) particles with surface chemistry and immobilizing a biopolymer, gelatin for the detection of protease enzymes in solution. A rugate filter, a one-dimensional photonic crystal, is fabricated that exhibits a high-reflectivity optical resonance that is sensitive to small changes in the refractive index. To immobilize gelatin in the pores of the particles, the hydrogen-terminated silicon surface was first modified with an alkyne, 1,8-nonadiyne via hydrosilylation to protect the silicon surfaces from oxidation. This modification allows for further functionality to be added such as the coupling of gelatin. Exposure of the gelatin modified particles to the protease subtilisin in solution causes a change in the refractive index, resulting in a shift of the resonance to shorter wavelengths, indicating cleavage of organic material within the pores. The ability to monitor the spectroscopic properties of microparticles, and shifts in the optical signature due to changes in the refractive index of the material within the pore space, is demonstrated.

  4. Study of waveguide crosstalk in silicon photonics integrated circuits

    NASA Astrophysics Data System (ADS)

    Donzella, Valentina; Talebi Fard, Sahba; Chrostowski, Lukas

    2013-10-01

    Silicon photonics is going trough a terrific expansion driven by several applications, from chip wiring to integrated sensors and telecommunications. Some applications, e.g. intra and inter chip connections and sensing, require long parallel waveguides for wiring or for connecting grating couplers (GCs) to devices situated in sensing micro-channels. In well packed photonics chips there are often long wiring waveguides parallel for several mm, so loss can be caused by light coupled back and forth between them (cross-talk), by scattering, wall roughness, mode mismatch, etc. This work aims to investigate cross-talk for long parallel waveguides, and to propose methods to reduce cross-talk loss when high integration density is required. We have designed and fabricated about 200 testing structures exploiting e-beam on silicon on insulator (SOI) chip, in order to test several parameters and to find out dominant loss mechanisms. All devices have been tested and measured using an automatic optical bench, in the wavelength range between 1500-1600 nm. Achieved results are promising, since they allow for comparing cross-talk for short as well as long interaction lengths (up to 5 mm), different waveguide width pairs, several separation distances, and for TE and TM polarization. For smaller gaps, having not symmetric pair of waveguides is very beneficial, since it results in a lower power coupling, e.g. about 20/14 dB of crosstalk reduction for TE/TM waveguides after 5 mm of propagation and gap of 0.5 μm. This can be very useful for the design of integrated photonics chips requiring high-density packaging of devices and waveguides.

  5. Integrating silicon photonic interconnects with CMOS: Fabrication to architecture

    NASA Astrophysics Data System (ADS)

    Sherwood, Nicholas Ramsey

    While it was for many years the goal of microelectronics to speed up our daily tasks, the focus of today's technological developments is heavily centered on electronic media. Anyone can share their thoughts as text, sound, images or full videos, they can even make phone calls and download full movies on their computers, tablets and phones. The impact of this upsurge in bandwidth is directly on the infrastructure that carries this data. Long distance telecom lines were long ago replaced by optical fibers; now shorter and shorter distance connections have moved to optical transmission to keep up with the bandwidth requirements. Yet microprocessors that make up the switching nodes as well as the endpoints are not only stagnant in terms of processing speed, but also unlikely to continue Moore's transistor-doubling trend for much longer. Silicon photonics stands to make a technical leap in microprocessor technology by allowing monolithic communication speeds between arbitrarily spaced processing elements. The improvement in on-chip communication could reduce power and enable new improvements in this field. This work explores a few aspects involved in making such a leap practical in real life. The first part of the thesis develops process techniques and materials to make silicon photonics truly compatible with CMOS electronics, for two different stack layouts, including a glimpse into multilayerd photonics. Following this is an evaluation of the limitations of integrated devices and a post-fabrication/stabilizing solution using thermal index shifting. In the last parts we explore higher level device design and architecture on the SOI platform.

  6. SOI metal-oxide-semiconductor field-effect transistor photon detector based on single-hole counting.

    PubMed

    Du, Wei; Inokawa, Hiroshi; Satoh, Hiroaki; Ono, Atsushi

    2011-08-01

    In this Letter, a scaled-down silicon-on-insulator (SOI) metal-oxide-semiconductor field-effect transistor (MOSFET) is characterized as a photon detector, where photogenerated individual holes are trapped below the negatively biased gate and modulate stepwise the electron current flowing in the bottom channel induced by the positive substrate bias. The output waveforms exhibit clear separation of current levels corresponding to different numbers of trapped holes. Considering this capability of single-hole counting, a small dark count of less than 0.02 s(-1) at room temperature, and low operation voltage of 1 V, SOI MOSFET could be a unique photon-number-resolving detector if the small quantum efficiency were improved.

  7. Lossless compression of projection data from photon counting detectors

    NASA Astrophysics Data System (ADS)

    Shunhavanich, Picha; Pelc, Norbert J.

    2016-03-01

    With many attractive attributes, photon counting detectors with many energy bins are being considered for clinical CT systems. In practice, a large amount of projection data acquired for multiple energy bins must be transferred in real time through slip rings and data storage subsystems, causing a bandwidth bottleneck problem. The higher resolution of these detectors and the need for faster acquisition additionally contribute to this issue. In this work, we introduce a new approach to lossless compression, specifically for projection data from photon counting detectors, by utilizing the dependencies in the multi-energy data. The proposed predictor estimates the value of a projection data sample as a weighted average of its neighboring samples and an approximation from other energy bins, and the prediction residuals are then encoded. Context modeling using three or four quantized local gradients is also employed to detect edge characteristics of the data. Using three simulated phantoms including a head phantom, compression of 2.3:1-2.4:1 was achieved. The proposed predictor using zero, three, and four gradient contexts was compared to JPEG-LS and the ideal predictor (noiseless projection data). Among our proposed predictors, three-gradient context is preferred with a compression ratio from Golomb coding 7% higher than JPEG-LS and only 3% lower than the ideal predictor. In encoder efficiency, the Golomb code with the proposed three-gradient contexts has higher compression than block floating point. We also propose a lossy compression scheme, which quantizes the prediction residuals with scalar uniform quantization using quantization boundaries that limit the ratio of quantization error variance to quantum noise variance. Applying our proposed predictor with three-gradient context, the lossy compression achieved a compression ratio of 3.3:1 but inserted a 2.1% standard deviation of error compared to that of quantum noise in reconstructed images. From the initial

  8. Phasor imaging with a widefield photon-counting detector

    PubMed Central

    Siegmund, Oswald H. W.; Tremsin, Anton S.; Vallerga, John V.; Weiss, Shimon

    2012-01-01

    Abstract. Fluorescence lifetime can be used as a contrast mechanism to distinguish fluorophores for localization or tracking, for studying molecular interactions, binding, assembly, and aggregation, or for observing conformational changes via Förster resonance energy transfer (FRET) between donor and acceptor molecules. Fluorescence lifetime imaging microscopy (FLIM) is thus a powerful technique but its widespread use has been hampered by demanding hardware and software requirements. FLIM data is often analyzed in terms of multicomponent fluorescence lifetime decays, which requires large signals for a good signal-to-noise ratio. This confines the approach to very low frame rates and limits the number of frames which can be acquired before bleaching the sample. Recently, a computationally efficient and intuitive graphical representation, the phasor approach, has been proposed as an alternative method for FLIM data analysis at the ensemble and single-molecule level. In this article, we illustrate the advantages of combining phasor analysis with a widefield time-resolved single photon-counting detector (the H33D detector) for FLIM applications. In particular we show that phasor analysis allows real-time subsecond identification of species by their lifetimes and rapid representation of their spatial distribution, thanks to the parallel acquisition of FLIM information over a wide field of view by the H33D detector. We also discuss possible improvements of the H33D detector’s performance made possible by the simplicity of phasor analysis and its relaxed timing accuracy requirements compared to standard time-correlated single-photon counting (TCSPC) methods. PMID:22352658

  9. Competitive technologies of third generation infrared photon detectors

    NASA Astrophysics Data System (ADS)

    Rogalski, A.

    2006-03-01

    Hitherto, two families of multielement infrared (IR) detectors are used for principal military and civilian infrared applications; one is used for scanning systems (first generation) and the other is used for staring systems (second generation). Third generation systems are being developed nowadays. In the common understanding, third generation IR systems provide enhanced capabilities like larger number of pixels, higher frame rates, better thermal resolution as well as multicolour functionality and other on-chip functions. In the paper, issues associated with the development and exploitation of materials used in fabrication of third generation infrared photon detectors are discussed. In this class of detectors two main competitors, HgCdTe photodiodes and quantum well IR photoconductors (QWIPs) are considered. The performance figures of merit of state-of-the-art HgCdTe and QWIP focal plane arrays (FPAs) are similar because the main limitations come from the readout circuits. However, the metallurgical issues of the epitaxial layers such as uniformity and number of defected elements are the serious problems in the case of long wavelength infrared (LWIR) and very LWIR (VLWIR) HgCdTe FPAs. It is predicted that superlattice based InAs/GaInSb system grown on GaSb substrate seems to be an attractive to HgCdTe with good spatial uniformity and an ability to span cutoff wavelength from 3 to 25 μm.

  10. Competitive technologies for third generation infrared photon detectors

    NASA Astrophysics Data System (ADS)

    Rogalski, A.

    2006-05-01

    Hitherto, two families of multielement infrared (IR) detectors are used for principal military and civilian infrared applications; one is used for scanning systems (first generation) and the other is used for staring systems (second generation). Third generation systems are being developed nowadays. In the common understanding, third generation IR systems provide enhanced capabilities like larger number of pixels, higher frame rates, better thermal resolution as well as multicolor functionality and other on-chip functions. In the paper, issues associated with the development and exploitation of materials used in fabrication of third generation infrared photon detectors are discussed. In this class of detectors two main competitors, HgCdTe photodiodes and quantum well photoconductors are considered. The performance figures of merit of state-of-the-art HgCdTe and QWIP focal plane arrays (FPAs) are similar because the main limitations come from the readout circuits. The metallurgical issues of the epitaxial layers such as uniformity and number of defected elements are the serious problems in the case of long wavelength infrared (LWIR) and very LWIR (VLWIR) HgCdTe FPAs. It is predicted that superlattice based InAs/GaInSb system grown on GaSb substrate seems to be an attractive to HgCdTe with good spatial uniformity and an ability to span cutoff wavelength from 3 to 25 μm. In this context the material properties of type II superlattices are considered more in detail.

  11. Anamorphic preclinical SPECT imaging with high-resolution silicon double-sided strip detectors

    NASA Astrophysics Data System (ADS)

    Durko, Heather L.

    Preclinical single-photon emission computed tomography (SPECT) is an essential tool for studying progression, response to treatment, and physiological changes in small animal models of human disease. The wide range of imaging applications is often limited by the static design of many preclinical SPECT systems. We have developed a prototype imaging system that replaces the standard static pinhole aperture with two sets of movable, keel-edged copper-tungsten blades configured as crossed (skewed) slits. These apertures can be positioned independently between the object and detector, producing an anamorphic image in which the axial and transaxial magnications are not constrained to be equal. We incorporated a 60 mm x 60 mm, millimeter-thick megapixel silicon double-sided strip detector that permits ultrahigh-resolution imaging. While the stopping power of silicon is low for many common clinical radioisotopes, its performance is sufficient in the range of 20-60 keV to allow practical imaging experiments. The low-energy emissions of 125I fall within this energy window, and the 60-day half life provides an advantage for longitudinal studies. The flexible nature of this system allows the future application of adaptive imaging techniques. We have demonstrated ˜225-mum axial and ˜175-mum transaxial resolution across a 2.65 cm3 cylindrical field of view, as well as the capability for simultaneous multi-isotope acquisitions. We describe the key advancements that have made this system operational, including bringing up a new detector readout ASIC, development of detector control software and data-processing algorithms, and characterization of operating characteristics. We describe design and fabrication of the adjustable slit aperture platform, as well as the development of an accurate imaging forward model and its application in a novel geometric calibration technique and a GPU-based ultrahigh-resolution reconstruction code.

  12. Silicon photomultipliers detectors for next generation high-energy space telescopes

    NASA Astrophysics Data System (ADS)

    Lacombe, K.; Knödlseder, J.; Delaigue, S.; Gimenez, T.; Houret, B.; Mourey, V.; Ramon, P.; Virmontois, C.

    2016-09-01

    Photon detection is a central element of any high-energy astronomy instrumentation. One classical setup that has proven successful in many missions is the combination of photomultiplier tubes (PMTs) with scintillators, converting incoming high-energy photons into visible light, which in turn is converted in an electrical impulse. Although being extremely sensitive and rapid, PMTs have the drawback of being bulky, fragile, and require a high-voltage power supply of up to several thousand volts. Recent technological advances in the development of silicon photomultipliers (SiPM) make them a promising alternative to PMTs in essentially all their applications. We have started a RD program to assess the possibility of using SiPMs for space-based applications in the domain of high-energy astronomy. We will present results of our characterization studies of SiPMs from 3 manufacturers. Each SiPM detector has been tested inside a dedicated vacuum chamber and at low temperature to assess its performance in a representative space environment. Irradiation tests are scheduled to understand the susceptibility of SiPM to radiation damage. After comparison, we will select a baseline detector and design a specific front-end electronics and mechanical system. Furthermore, we plan to develop a low noise voltage power supply that ensures the stability of the SiPMs and to study their coupling to scintillators. Finally, our ultimate goal is to qualify the system for a space Technical Readiness Level of 5.

  13. Porous silicon-based two-dimensional photonic crystal for biochemical sensing applications

    NASA Astrophysics Data System (ADS)

    Mo, Jiaqing; Lv, Xiaoyi; Jia, Zhenhong

    2016-11-01

    Various porous silicon-based photonic device structures has attracted more attention for use as biochemical optical sensors. In this study, we have designed and characterized porous silicon-based two-dimensional photonic crystal waveguide structure as an optical biosensor. Field intensity distribution of two-dimensional photonic crystal waveguide was simulated using COMSOL Multiphysics. When the refractive index changes, the field strength changes greatly. This study lays the theoretical foundation for further work.

  14. Nonlinear silicon photonics from the near to mid infrared

    NASA Astrophysics Data System (ADS)

    Park, Jung Soo

    This dissertation presents experimental work investigating silicon-on-insulator (SOI) photonic waveguides for parametric nonlinear optic devices. An introduction is presented in Chapter 1, including background and motivation for exploring SOI as a platform for integrated photonics, as well as an overview of integrated nonlinear optic devices. Chapter 2 discusses on-chip slow light structures based on coupled-resonator optical waveguides (CROW), potentially useful for enhancing nonlinearities for efficient chip-scale nonlinear optics. Although slowing light is limited by fabrication tolerance-induced disorder, a fundamental phenomenon is observed: the Anderson localization of optical waves. Chapter 3 of the dissertation discusses four-wave mixing in SOI waveguides. SOI waveguide fabrication is described in detail, including achieving low fiber-to-chip coupling loss and waveguide propagation loss. Two approaches for dispersion engineering are presented: with the design of waveguide dimensions and with a thin-film cladding. Parametric wavelength conversion by degenerate (single-pump) FWM in these dispersion-engineered waveguides is demonstrated and discussed. Chapter 4 concerns FWM with two pumps, an approach that promises functionalities not possible with a single pump such as multiple sideband generation with self-seeded higher-order pumps. In addition to demonstrating the generation of up to ten sidebands with dual pumps and subsequent self-seeded higher order pumps, we characterize trade-offs in maximum conversion efficiency due to nondegenerate two-photon absorption (TPA). The work presented in Chapter 5 takes a novel approach to SOI parametric devices by exploring a new spectral range, toward the mid-infrared (mid-IR), near 2 mum and beyond. We measure FWM in silicon waveguides with a pump near 2 mum, which itself is generated by the parametric conversion of a 1300 nm seed by a 1589 nm pump in a highly-nonlinear fiber (HNLF). Fundamentally, our results show

  15. Contrast cancellation technique applied to digital x-ray imaging using silicon strip detectors

    SciTech Connect

    Avila, C.; Lopez, J.; Sanabria, J. C.; Baldazzi, G.; Bollini, D.; Gombia, M.; Cabal, A.E.; Ceballos, C.; Diaz Garcia, A.; Gambaccini, M.; Taibi, A.; Sarnelli, A.; Tuffanelli, A.; Giubellino, P.; Marzari-Chiesa, A.; Prino, F.; Tomassi, E.; Grybos, P.; Idzik, M.; Swientek, K.

    2005-12-15

    Dual-energy mammographic imaging experimental tests have been performed using a compact dichromatic imaging system based on a conventional x-ray tube, a mosaic crystal, and a 384-strip silicon detector equipped with full-custom electronics with single photon counting capability. For simulating mammal tissue, a three-component phantom, made of Plexiglass, polyethylene, and water, has been used. Images have been collected with three different pairs of x-ray energies: 16-32 keV, 18-36 keV, and 20-40 keV. A Monte Carlo simulation of the experiment has also been carried out using the MCNP-4C transport code. The Alvarez-Macovski algorithm has been applied both to experimental and simulated data to remove the contrast between two of the phantom materials so as to enhance the visibility of the third one.

  16. Development of a fast read-out system of a single photon counting detector for mammography with synchrotron radiation

    NASA Astrophysics Data System (ADS)

    Lopez, F. C.; Rigon, L.; Longo, R.; Arfelli, F.; Bergamaschi, A.; Chen, R. C.; Dreossi, D.; Schmitt, B.; Vallazza, E.; Castelli, E.

    2011-12-01

    A single-photon counting detector read-out system for mammography with synchrotron radiation has been developed with the aim to meet the needs of the mammographic imaging station of the SYRMEP beamline at ELETTRA. The system called PICASSO (Phase Imaging for Clinical Application with Silicon detector and Synchrotron radiatiOn) is a modular detector that implements a read-out system with MYTHEN II ASICs, an embedded Linux-based controller board and a Scientific Linux acquisition workstation. The system architecture and characteristics are herein presented. The system was tested at the SYRMEP beamline and achieved a frame rate of 33 Hz for 8448 channels at 24-bit dynamic range, and it is capable of continuously acquiring up to 2000 frames. Standard mammographic phantoms were imaged and good quality images were obtained at doses comparable with what is delivered in conventional full field mammographic systems.

  17. Plasmonic nanofocusing of light in an integrated silicon photonics platform.

    PubMed

    Desiatov, Boris; Goykhman, Ilya; Levy, Uriel

    2011-07-04

    The capability to focus electromagnetic energy at the nanoscale plays an important role in nanoscinece and nanotechnology. It allows enhancing light matter interactions at the nanoscale with applications related to nonlinear optics, light emission and light detection. It may also be used for enhancing resolution in microscopy, lithography and optical storage systems. Hereby we propose and experimentally demonstrate the nanoscale focusing of surface plasmons by constructing an integrated plasmonic/photonic on chip nanofocusing device in silicon platform. The device was tested directly by measuring the optical intensity along it using a near-field microscope. We found an order of magnitude enhancement of the intensity at the tip's apex. The spot size is estimated to be 50 nm. The demonstrated device may be used as a building block for "lab on a chip" systems and for enhancing light matter interactions at the apex of the tip.

  18. Experimental Bayesian Quantum Phase Estimation on a Silicon Photonic Chip.

    PubMed

    Paesani, S; Gentile, A A; Santagati, R; Wang, J; Wiebe, N; Tew, D P; O'Brien, J L; Thompson, M G

    2017-03-10

    Quantum phase estimation is a fundamental subroutine in many quantum algorithms, including Shor's factorization algorithm and quantum simulation. However, so far results have cast doubt on its practicability for near-term, nonfault tolerant, quantum devices. Here we report experimental results demonstrating that this intuition need not be true. We implement a recently proposed adaptive Bayesian approach to quantum phase estimation and use it to simulate molecular energies on a silicon quantum photonic device. The approach is verified to be well suited for prethreshold quantum processors by investigating its superior robustness to noise and decoherence compared to the iterative phase estimation algorithm. This shows a promising route to unlock the power of quantum phase estimation much sooner than previously believed.

  19. Silicon photonic dynamic optical channel leveler with external feedback loop.

    PubMed

    Doylend, J K; Jessop, P E; Knights, A P

    2010-06-21

    We demonstrate a dynamic optical channel leveler composed of a variable optical attenuator (VOA) integrated monolithically with a defect-mediated photodiode in a silicon photonic waveguide device. An external feedback loop mimics an analog circuit such that the photodiode directly controls the VOA to provide blind channel leveling within +/-1 dB across a 7-10 dB dynamic range for wavelengths from 1530 nm to 1570 nm. The device consumes approximately 50 mW electrical power and occupies a 6 mm x 0.1 mm footprint per channel. Dynamic leveling is accomplished without tapping optical power from the output path to the photodiode and thus the loss penalty is minimized.

  20. Compact and fast photonic crystal silicon optical modulators.

    PubMed

    Nguyen, Hong C; Hashimoto, Satoshi; Shinkawa, Mizuki; Baba, Toshihiko

    2012-09-24

    We demonstrate the first sub-100 μm silicon Mach-Zehnder modulators (MZMs) that operate at >10 Gb/s, by exploiting low-dispersion slow-light in lattice-shifted photonic crystal waveguides (LSPCWs). We use two LSPCW-MZM structures, one with LSPCWs in both arms of the MZM, and the other with an LSPCW in only one of the arms. Using the first structure we demonstrate 10 Gb/s operation with a operating bandwidth of 12.5 nm, in a device with a phase-shifter length of only 50 μm. Using the second structure, owing to a larger group index as well as lower spectral noise, we demonstrate 40 Gb/s operation with a phase-shifter length of only 90 μm, which is more than an order-of-magnitude shorter than most 40 Gb/s MZMs.

  1. Optical nonreciprocal transmission in an asymmetric silicon photonic crystal structure

    SciTech Connect

    Wu, Zheng; Chen, Juguang; Ji, Mengxi; Huang, Qingzhong; Xia, Jinsong; Wang, Yi E-mail: ywangwnlo@mail.hust.edu.cn; Wu, Ying E-mail: ywangwnlo@mail.hust.edu.cn

    2015-11-30

    An optical nonreciprocal transmission (ONT) is realized by employing the nonlinear effects in a compact asymmetric direct-coupled nanocavity-waveguide silicon photonic crystal structure with a high loaded quality factor (Q{sub L}) of 42 360 and large extinction ratio exceeding 30 dB. Applying a single step lithography and successive etching, the device can realize the ONT in an individual nanocavity, alleviating the requirement to accurately control the resonance of the cavities. A maximum nonreciprocal transmission ratio of 21.1 dB as well as a working bandwidth of 280 pm in the telecommunication band are obtained at a low input power of 76.7 μW. The calculated results by employing a nonlinear coupled-mode model are in good agreement with the experiment.

  2. A four-pixel single-photon pulse-position array fabricated from WSi superconducting nanowire single-photon detectors

    SciTech Connect

    Verma, V. B. Horansky, R.; Lita, A. E.; Mirin, R. P.; Nam, S. W.; Marsili, F.; Stern, J. A.; Shaw, M. D.

    2014-02-03

    We demonstrate a scalable readout scheme for an infrared single-photon pulse-position camera consisting of WSi superconducting nanowire single-photon detectors. For an N × N array, only 2 × N wires are required to obtain the position of a detection event. As a proof-of-principle, we show results from a 2 × 2 array.

  3. Radiation tolerance studies of neutron irradiated double sided silicon microstrip detectors

    NASA Astrophysics Data System (ADS)

    Singla, M.; Larionov, P.; Balog, T.; Heuser, J.; Malygina, H.; Momot, I.; Sorokin, I.; Sturm, C.

    2016-07-01

    Radiation tolerance studies were made on double-sided silicon microstrip detectors for the Silicon Tracking System of the Compressed Baryonic Matter experiment at FAIR. The prototype detectors from two different vendors were irradiated to twice the highest expected fluence (1 ×1014 1 MeVneqcm-2) in the CBM experimental runs of several years. Test results from these prototype detectors both before and after irradiations have been discussed.

  4. Testing of the KRI-developed Silicon PIN Radioxenon Detector

    SciTech Connect

    Foxe, Michael P.; McIntyre, Justin I.

    2015-01-23

    Radioxenon detectors are used for the verification of the Comprehensive Nuclear-Test-Ban Treaty (CTBT) in a network of detectors throughout the world called the International Monitoring System (IMS). The Comprehensive Nuclear-Test-Ban Treaty Organization (CTBTO) Provisional Technical Secretariat (PTS) has tasked Pacific Northwest National Laboratory (PNNL) with testing a V.G. Khlopin Radium Institute (KRI) and Lares Ltd-developed Silicon PIN detector for radioxenon detection. PNNL measured radioxenon with the silicon PIN detector and determined its potential compared to current plastic scintillator beta cells. While the PNNL tested Si detector experienced noise issues, a second detector was tested in Russia at Lares Ltd, which did not exhibit the noise issues. Without the noise issues, the Si detector produces much better energy resolution and isomer peak separation than a conventional plastic scintillator cell used in the SAUNA systems in the IMS. Under the assumption of 1 cm3 of Xe in laboratory-like conditions, 24-hr count time (12-hr count time for the SAUNA), with the respective shielding the minimum detectable concentrations for the Si detector tested by Lares Ltd (and a conventional SAUNA system) were calculated to be: 131mXe – 0.12 mBq/m3 (0.12 mBq/m3); 133Xe – 0.18 mBq/m3 (0.21 mBq/m3); 133mXe – 0.07 mBq/m3 (0.15 mBq/m3); 135Xe – 0.45 mBq/m3 (0.67 mBq/m3). Detection limits, which are one of the important factors in choosing the best detection technique for radioxenon in field conditions, are significantly better than for SAUNA-like detection systems for 131mXe and 133mXe, but similar for 133Xe and 135Xe. Another important factor is the amount of “memory effect” or carry over signal from one radioxenon measurement to the subsequent sample. The memory effect is

  5. Silicon photonic structures with embedded polymers for novel sensing methods

    NASA Astrophysics Data System (ADS)

    Osipov, E. V.; Martynov, I. L.; Dovzhenko, D. S.; Ananev, P. S.; Kotkovskii, G. E.; Chistyakov, A. A.

    2017-01-01

    At present time research and development of a new generation of optical sensors using conjugated polymers, in particular sensors of explosives are actively underway. Nevertheless, the problems of the sensitivity, selectivity, and stability of such sensors are still of great interest. One of the ways to solve the problem is the creation of luminescence sensors based on photonic crystals with a high specific surface area, which have significant sorption ability and allow to effective modulate emission properties of luminophores. In this paper, porous silicon microcavities with embeded organic polyphenylenevinylene- (PPV) and polyfluorene- (PF) type polymers were created. It was shown that polymer infiltration in porous silicon microcavities leads to modification of their luminescence properties, which is expressed in narrowing of the emission spectrum and changing of its directional pattern. It was demonstrated that such structures exhibit sensitivity to saturated vapors of trinitrotoluene. The structures proposed can be treated as a basis for development of new type of sensors used for detection of vapors of nitroaromatic compounds.

  6. Doped niobium superconducting nanowire single-photon detectors

    NASA Astrophysics Data System (ADS)

    Jia, Tao; Kang, Lin; Zhang, Labao; Zhao, Qingyuan; Gu, Min; Qiu, Jian; Chen, Jian; Jin, Biaobing

    2014-09-01

    We designed and fabricated a special doped niobium (Nb*) superconducting nanowire single-photon detector (SNSPD) on MgO substrate. The superconductivity of this ultra-thin Nb* film was further improved by depositing an ultra-thin aluminum nitride protective layer on top. Compared with traditional Nb films, Nb* films present higher T C and J C. We investigated the dependence of the characteristics of devices, such as cut-off wavelength, response bandwidth, and temperature, on their geometrical dimensions. Results indicate that reduction in both the width and thickness of Nb* nanowires extended the cut-off wavelength and improved the sensitivity. The Nb* SNSPD (50 nm width and 4.5 nm thickness) exhibited single-photon sensitivities at 1,310, 1,550, and 2,010 nm. We also demonstrated an enhancement in the detection efficiency by a factor of 10 in its count rate by lowering the working temperature from 2.26 K to 315 mK.

  7. CDF Run-II Silicon Detector: Operations and Aging

    SciTech Connect

    Stancari, Michelle; /Fermilab

    2011-09-10

    The CDF Run-II silicon microstrip detector has seen almost 12 fb{sup -1} of proton-antiproton collisions over the last 10 years. It has shown remarkable performance, with 80% of its channels still operating error-free, and only one of its eight layers approaching the operational limits for full depletion. The measured depletion voltage and signal-to-noise ratio of these sensors give unique information about the behavior of sensors irradiated slowly over a long period of time. Data from heavily irradiated, double-sided sensors excludes a monotonic electric field inside the sensor and is instead consistent with a doubly-peaked field that is lower in the center of the sensor and higher at the edges.

  8. Uncooled infrared photon detector and multicolor infrared detection using microoptomechanical sensors

    DOEpatents

    Datskos, Panagiotis G.; Rajic, Solobodan; Datskou, Irene C.

    1999-01-01

    Systems and methods for infrared detection are described. An optomechanical photon detector includes a semiconductor material and is based on measurement of a photoinduced lattice strain. A multicolor infrared sensor includes a stack of frequency specific optomechanical detectors. The stack can include one, or more, of the optomechanical photon detectors that function based on the measurement of photoinduced lattice strain. The systems and methods provide advantages in that rapid, sensitive multicolor infrared imaging can be performed without the need for a cooling subsystem.

  9. Method for characterizing single photon detectors in saturation regime by cw laser.

    PubMed

    Oh, Jungmi; Antonelli, Cristian; Tur, Moshe; Brodsky, Misha

    2010-03-15

    We derive an analytical expression for the count probability of a single photon detector for a wide range of input optical power that includes afterpulsing effects. We confirm the validity of the expression by fitting it to the data obtained from a saturated commercial Single Photon Detector by illuminating it with a cw laser. Detector efficiency and afterpulsing probability extracted from the fits agree with the manufacture specs for low repetition frequencies.

  10. Compact silicon photonic wavelength-tunable laser diode with ultra-wide wavelength tuning range

    SciTech Connect

    Kita, Tomohiro Tang, Rui; Yamada, Hirohito

    2015-03-16

    We present a wavelength-tunable laser diode with a 99-nm-wide wavelength tuning range. It has a compact wavelength-tunable filter with high wavelength selectivity fabricated using silicon photonics technology. The silicon photonic wavelength-tunable filter with wide wavelength tuning range was realized using two ring resonators and an asymmetric Mach-Zehnder interferometer. The wavelength-tunable laser diode fabricated by butt-joining a silicon photonic filter and semiconductor optical amplifier shows stable single-mode operation over a wide wavelength range.

  11. Compact silicon photonic wavelength-tunable laser diode with ultra-wide wavelength tuning range

    NASA Astrophysics Data System (ADS)

    Kita, Tomohiro; Tang, Rui; Yamada, Hirohito

    2015-03-01

    We present a wavelength-tunable laser diode with a 99-nm-wide wavelength tuning range. It has a compact wavelength-tunable filter with high wavelength selectivity fabricated using silicon photonics technology. The silicon photonic wavelength-tunable filter with wide wavelength tuning range was realized using two ring resonators and an asymmetric Mach-Zehnder interferometer. The wavelength-tunable laser diode fabricated by butt-joining a silicon photonic filter and semiconductor optical amplifier shows stable single-mode operation over a wide wavelength range.

  12. Silicon photonics: Design, fabrication, and characterization of on-chip optical interconnects

    NASA Astrophysics Data System (ADS)

    Hsieh, I.-Wei

    In recent years, the research field of silicon photonics has been developing rapidly from a concept to a demonstrated technology, and has gathered much attention from both academia and industry communities. Its many potential applications in long-haul telecommunication, mid-range data-communication, on-chip optical interconnection networks, and nano-scale sensing as well as its compatibility with electronic integrated circuits have driven much effort in realizing silicon photonics both as a disruptive technology for existing markets and as an enabling technology for new ones. Despite the promising future of silicon photonics, many fundamental issues still remain to be understood---both in the linear- and nonlinear-optical regimes. There are also many engineering challenges to make silicon photonics the gold standard in photonic integrated circuits. In this thesis, we focus on the design, fabrication, and characterization of active and passive silicon-on-insulator (SOI) photonic devices. The SOI material system differs from most conventional optical material platforms because of its high-refractive-index-contrast, which enables engineers to design very compact integrated photonic networks with sub-micron transverse waveguide dimensions and sharp bends. On the other hand, because most analytical formulas for designing waveguide devices are valid only in low-index-contrast cases, SOI photonic devices need to be analyzed numerically for accurate results. The second chapter of this thesis describes some common numerical methods such as Beam Propagation Method (BPM) and Finite Element Method (FEM) for waveguide-design simulations, and presents two design studies based on these methods. The compatibility of silicon photonic integrated circuits with conventional CMOS fabrication technology is another important aspect that distinguishes silicon photonics from others such as III-V materials and lithium niobate. However, the requirements for fabricating silicon photonic

  13. The statistical distribution of the number of counted scintillation photons in digital silicon photomultipliers: model and validation.

    PubMed

    van Dam, Herman T; Seifert, Stefan; Schaart, Dennis R

    2012-08-07

    In the design and application of scintillation detectors based on silicon photomultipliers (SiPMs), e.g. in positron emission tomography imaging, it is important to understand and quantify the non-proportionality of the SiPM response due to saturation, crosstalk and dark counts. A new type of SiPM, the so-called digital silicon photomultiplier (dSiPM), has recently been introduced. Here, we develop a model of the probability distribution of the number of fired microcells, i.e. the number of counted scintillation photons, in response to a given amount of energy deposited in a scintillator optically coupled to a dSiPM. Based on physical and functional principles, the model elucidates the statistical behavior of dSiPMs. The model takes into account the photon detection efficiency of the detector; the light yield, excess variance and time profile of the scintillator; and the crosstalk probability, dark count rate, integration time and the number of microcells of the dSiPM. Furthermore, relations for the expectation value and the variance of the number of fired cells are deduced. These relations are applied in the experimental validation of the model using a dSiPM coupled to a LSO:Ce,Ca scintillator. Finally, we propose an accurate method for the correction of energy spectra measured with dSiPM-based scintillation detectors.

  14. Radiation hard silicon particle detectors for HL-LHC-RD50 status report

    NASA Astrophysics Data System (ADS)

    Terzo, S.

    2017-02-01

    It is foreseen to significantly increase the luminosity of the LHC by upgrading towards the HL-LHC (High Luminosity LHC). The Phase-II-Upgrade scheduled for 2024 will mean unprecedented radiation levels, way beyond the limits of the silicon trackers currently employed. All-silicon central trackers are being studied in ATLAS, CMS and LHCb, with extremely radiation hard silicon sensors to be employed on the innermost layers. Within the RD50 Collaboration, a massive R&D program is underway across experimental boundaries to develop silicon sensors with sufficient radiation tolerance. We will present results of several detector technologies and silicon materials at radiation levels corresponding to HL-LHC fluences. Based on these results, we will give recommendations for the silicon detectors to be used at the different radii of tracking systems in the LHC detector upgrades. In order to complement the measurements, we also perform detailed simulation studies of the sensors.

  15. Silicon detectors with boron converters of different geometrical modifications for fast neutrons registration

    NASA Astrophysics Data System (ADS)

    Ryabeva, E. V.; Kadilin, V. V.; Dedenko, G. L.; Zin, Tant

    2016-02-01

    In this article the development of the model for fast neuron detector is considered. The construction of detector is based on alternating layers of silicon as sensing material of charged particles and boron (enriched with 10B) as neutron converter located in moderator Simulation in GEANT4 showed that detector with one layer of silicon and one layer of boron has very low detection efficiency for fast neutron (approximately 4%).. The study of the possibility to increase detector efficiency due to geometry optimization of it is presented It is shown that efficiency depends on the number of layers and their location in the materials of detectors and moderator. It was found that the optimal geometry is that where the layers of boron-silicon are angularly related to each other. It is shown that the detection efficiency for a model with set of boron-silicon layers angularly related to each other is up may reach 6%.

  16. Development of CdTe pixel detectors combined with an aluminum Schottky diode sensor and photon-counting ASICs

    NASA Astrophysics Data System (ADS)

    Toyokawa, H.; Saji, C.; Kawase, M.; Wu, S.; Furukawa, Y.; Kajiwara, K.; Sato, M.; Hirono, T.; Shiro, A.; Shobu, T.; Suenaga, A.; Ikeda, H.

    2017-01-01

    We have been developing CdTe pixel detectors combined with a Schottky diode sensor and photon-counting ASICs. The hybrid pixel detector was designed with a pixel size of 200 μ m by 200 μm and an area of 19 mm by 20 mm or 38.2 mm by 40.2 mm. The photon-counting ASIC, SP8-04F10K, has a preamplifier, a shaper, 3-level window-type discriminators and a 24-bits counter in each pixel. The single-chip detector with 100 by 95 pixels successfully operated with a photon-counting mode selecting X-ray energy with the window comparator and stable operation was realized at 20 degrees C. We have performed a feasibility study for a white X-ray microbeam experiment. Laue diffraction patterns were measured during the scan of the irradiated position in a silicon steel sample. The grain boundaries were identified by using the differentials between adjacent images at each position.

  17. Silicon Photonics: All-Optical Devices for Linear and Nonlinear Applications

    NASA Astrophysics Data System (ADS)

    Driscoll, Jeffrey B.

    Silicon photonics has grown rapidly since the first Si electro-optic switch was demonstrated in 1987, and the field has never grown more quickly than it has over the past decade, fueled by milestone achievements in semiconductor processing technologies for low loss waveguides, high-speed Si modulators, Si lasers, Si detectors, and an enormous toolbox of passive and active integrated devices. Silicon photonics is now on the verge of major commercialization breakthroughs, and optical communication links remain the force driving integrated and Si photonics towards the first commercial telecom and datacom transceivers; however other potential and future applications are becoming uncovered and refined as researchers reveal the benefits of manipulating photons on the nanoscale. This thesis documents an exploration into the unique guided-wave and nonlinear properties of deeply-scaled high-index-contrast sub-wavelength Si waveguides. It is found that the tight confinement inherent to single-mode channel waveguides on the silicon-on-insulator platform lead to a rich physics, which can be leveraged for new devices extending well beyond simple passive interconnects and electro-optic devices. The following chapters will concentrate, in detail, on a number of unique physical features of Si waveguides and extend these attributes towards new and interesting devices. Linear optical properties and nonlinear optical properties are investigated, both of which are strongly affected by tight optical confinement of the guided waveguide modes. As will be shown, tight optical confinement directly results in strongly vectoral modal components, where the electric and magnetic fields of the guided modes extend into all spatial dimensions, even along the axis of propagation. In fact, the longitudinal electric and magnetic field components can be just as strong as the transverse fields, directly affecting the modal group velocity and energy transport properties since the longitudinal fields

  18. Non-Geiger mode single photon detector with multiple amplification and gain control mechanisms

    SciTech Connect

    Nawar Rahman, Samia Hall, David; Lo, Yu-Hwa

    2014-05-07

    A new type of single photon detector, Multiple Amplification Gain with Internal Control (MAGIC), is proposed and analyzed using Monte Carlo simulations based on a physical model of the device. The MAGIC detector has two coupled amplification mechanisms, avalanche multiplication and bipolar gain, and the net gain is regulated by a built-in feedback mechanism. Compared to conventional Geiger mode single photon avalanche detectors (SPADs), the MAGIC detector produces a much greater single photon detection efficiency of nearly 100%, low bit-error-ratio for single photon signals, and a large dynamic range. All these properties are highly desirable for applications that require single photon sensitivity and are absent for conventional Geiger-mode SPADs.

  19. Resolution and sensitivity of a Fabry-Perot interferometer with a photon-number-resolving detector

    SciTech Connect

    Wildfeuer, Christoph F.; Dowling, Jonathan P.; Pearlman, Aaron J.; Chen, Jun; Fan, Jingyun; Migdall, Alan

    2009-10-15

    With photon-number resolving detectors, we show compression of interference fringes with increasing photon numbers for a Fabry-Perot interferometer. This feature provides a higher precision in determining the position of the interference maxima compared to a classical detection strategy. We also theoretically show supersensitivity if N-photon states are sent into the interferometer and a photon-number resolving measurement is performed.

  20. A new generation of ultra-dense optical I/O for silicon photonics

    NASA Astrophysics Data System (ADS)

    Wlodawski, Mitchell S.; Kopp, Victor I.; Park, Jongchul; Singer, Jonathan; Hubner, Eric E.; Neugroschl, Daniel; Chao, Norman; Genack, Azriel Z.

    2014-03-01

    In response to the optical packaging needs of a rapidly growing silicon photonics market, Chiral Photonics, Inc. (CPI) has developed a new generation of ultra-dense-channel, bi-directional, all-optical, input/output (I/O) couplers that bridge the data transport gap between standard optical fibers and photonic integrated circuits. These couplers, called Pitch Reducing Optical Fiber Arrays (PROFAs), provide a means to simultaneously match both the mode field and channel spacing (i.e. pitch) between an optical fiber array and a photonic integrated circuit (PIC). Both primary methods for optically interfacing with PICs, via vertical grating couplers (VGCs) and edge couplers, can be addressed with PROFAs. PROFAs bring the signal-carrying cores, either multimode or singlemode, of many optical fibers into close proximity within an all-glass device that can provide low loss coupling to on-chip components, including waveguides, gratings, detectors and emitters. Two-dimensional (2D) PROFAs offer more than an order of magnitude enhancement in channel density compared to conventional one-dimensional (1D) fiber arrays. PROFAs can also be used with low vertical profile solutions that simplify optoelectronic packaging while reducing PIC I/O real estate usage requirements. PROFA technology is based on a scalable production process for microforming glass preform assemblies as they are pulled through a small oven. An innovative fiber design, called the "vanishing core," enables tailoring the mode field along the length of the PROFA to meet the coupling needs of disparate waveguide technologies, such as fiber and onchip. Examples of single- and multi-channel couplers fabricated using this technology will be presented.

  1. Design of near-infrared single photon detector at 1550nm wavelength

    NASA Astrophysics Data System (ADS)

    Gao, Jiali

    2016-09-01

    Technology of near-infrared single photon detection is used in quantum communication, laser ranging and weak light detection. Present single photon detectors are usually expensive and bulky. To overcome their disadvantages, a hand-held single photon detector based on InGaAs/InP avalanche photo diode (APD) is developed. A circuit program for temperature control and bias voltage is offered. The gating signal is generated and the avalanche signal is extracted by FPGA. Experiment results show that, the single photon detector yields only 8.2×10-6/ns dark count rate (DCR) when photon detection efficiency is 12%, and the maximum photon detection efficiency of 16% is obtained at temperature of -55°C.

  2. On-chip hybrid photonic-plasmonic light concentrator for nanofocusing in an integrated silicon photonics platform.

    PubMed

    Luo, Ye; Chamanzar, Maysamreza; Apuzzo, Aniello; Salas-Montiel, Rafael; Nguyen, Kim Ngoc; Blaize, Sylvain; Adibi, Ali

    2015-02-11

    The enhancement and confinement of electromagnetic radiation to nanometer scale have improved the performances and decreased the dimensions of optical sources and detectors for several applications including spectroscopy, medical applications, and quantum information. Realization of on-chip nanofocusing devices compatible with silicon photonics platform adds a key functionality and provides opportunities for sensing, trapping, on-chip signal processing, and communications. Here, we discuss the design, fabrication, and experimental demonstration of light nanofocusing in a hybrid plasmonic-photonic nanotaper structure. We discuss the physical mechanisms behind the operation of this device, the coupling mechanisms, and how to engineer the energy transfer from a propagating guided mode to a trapped plasmonic mode at the apex of the plasmonic nanotaper with minimal radiation loss. Optical near-field measurements and Fourier modal analysis carried out using a near-field scanning optical microscope (NSOM) show a tight nanofocusing of light in this structure to an extremely small spot of 0.00563(λ/(2n(rmax)))(3) confined in 3D and an exquisite power input conversion of 92%. Our experiments also verify the mode selectivity of the device (low transmission of a TM-like input mode and high transmission of a TE-like input mode). A large field concentration factor (FCF) of about 4.9 is estimated from our NSOM measurement with a radius of curvature of about 20 nm at the apex of the nanotaper. The agreement between our theory and experimental results reveals helpful insights about the operation mechanism of the device, the interplay of the modes, and the gradual power transfer to the nanotaper apex.

  3. Narrow bandgap semiconducting silicides: Intrinsic infrared detectors on a silicon chip

    NASA Technical Reports Server (NTRS)

    Mahan, John E.

    1989-01-01

    Polycrystalline thin films of CrSi2, LaSi2, and ReSi2 were grown on silicon substrates. Normal incidence optical transmittance and reflectance measurements were made as a function of wavelength. It was demonstrated that LaSi2 is a metallic conductor, but that CrSi2 and ReSi2 are, in fact, narrow bandgap semiconductors. For CrSi2, the complex index of refraction was determined by computer analysis of the optical data. From the imaginary part, the optical absorption coefficient was determined as a function of photon energy. It was shown that CrSi2 possesses an indirect forbidden energy gap of slightly less than 0.31 eV, and yet it is a very strong absorber of light above the absorption edge. On the other hand, the ReSi2 films exhibit an absorption edge in the vicinity of 0.2 eV. Measurements of the thermal activation energy of resistivity for ReSi2 indicate a bandgap of 0.18 eV. It is concluded that the semiconducting silicides merit further investigation for development as new silicon-compatible infrared detector materials.

  4. Photon noise limited radiation detection with lens-antenna coupled microwave kinetic inductance detectors

    SciTech Connect

    Yates, S. J. C.; Baselmans, J. J. A.; Diener, P.; Endo, A.; Janssen, R. M. J.; Ferrari, L.; Baryshev, A. M.

    2011-08-15

    Microwave kinetic inductance detectors (MKIDs) have shown great potential for sub-mm instrumentation because of the high scalability of the technology. Here, we demonstrate for the first time in the sub-mm band (0.1-2 mm) a photon noise limited performance of a small antenna coupled MKID detector array and we describe the relation between photon noise and MKID intrinsic generation-recombination noise. Additionally, we use the observed photon noise to measure the optical efficiency of detectors to be 0.8 {+-} 0.2.

  5. Photon noise limited radiation detection with lens-antenna coupled microwave kinetic inductance detectors

    NASA Astrophysics Data System (ADS)

    Yates, S. J. C.; Baselmans, J. J. A.; Endo, A.; Janssen, R. M. J.; Ferrari, L.; Diener, P.; Baryshev, A. M.

    2011-08-01

    Microwave kinetic inductance detectors (MKIDs) have shown great potential for sub-mm instrumentation because of the high scalability of the technology. Here, we demonstrate for the first time in the sub-mm band (0.1-2 mm) a photon noise limited performance of a small antenna coupled MKID detector array and we describe the relation between photon noise and MKID intrinsic generation-recombination noise. Additionally, we use the observed photon noise to measure the optical efficiency of detectors to be 0.8 ± 0.2.

  6. Silicon photonics integrated circuits: a manufacturing platform for high density, low power optical I/O's.

    PubMed

    Absil, Philippe P; Verheyen, Peter; De Heyn, Peter; Pantouvaki, Marianna; Lepage, Guy; De Coster, Jeroen; Van Campenhout, Joris

    2015-04-06

    Silicon photonics integrated circuits are considered to enable future computing systems with optical input-outputs co-packaged with CMOS chips to circumvent the limitations of electrical interfaces. In this paper we present the recent progress made to enable dense multiplexing by exploiting the integration advantage of silicon photonics integrated circuits. We also discuss the manufacturability of such circuits, a key factor for a wide adoption of this technology.

  7. Prospect of chip scale silicon photonics transceiver for high density multi-mode wiring system

    NASA Astrophysics Data System (ADS)

    Kurata, Kazuhiko; Suzuki, Yasuyuki; Kurihara, Mitsuru; Tokushima, Masatoshi; Hagihara, Yasuhiko; Ogura, Ichiro; Nakamura, Takahiro

    2016-03-01

    We propose high density multi-mode wiring system with chip scale silicon photonics transceiver. After review of concept and a discussion of overall design principles, design of a chip scale optical transceiver named Optical I/O core using silicon photonics is described.Experimental results with connected multimode fiber are presented. Finally, applications of optical I/O core and future prospects are introduced.

  8. Reconfigurable radio-frequency arbitrary waveforms synthesized in a silicon photonic chip

    PubMed Central

    Wang, Jian; Shen, Hao; Fan, Li; Wu, Rui; Niu, Ben; Varghese, Leo T.; Xuan, Yi; Leaird, Daniel E.; Wang, Xi; Gan, Fuwan; Weiner, Andrew M.; Qi, Minghao

    2015-01-01

    Photonic methods of radio-frequency waveform generation and processing can provide performance advantages and flexibility over electronic methods due to the ultrawide bandwidth offered by the optical carriers. However, bulk optics implementations suffer from the lack of integration and slow reconfiguration speed. Here we propose an architecture of integrated photonic radio-frequency generation and processing and implement it on a silicon chip fabricated in a semiconductor manufacturing foundry. Our device can generate programmable radio-frequency bursts or continuous waveforms with only the light source, electrical drives/controls and detectors being off-chip. It modulates an individual pulse in a radio-frequency burst within 4 ns, achieving a reconfiguration speed three orders of magnitude faster than thermal tuning. The on-chip optical delay elements offer an integrated approach to accurately manipulating individual radio-frequency waveform features without constraints set by the speed and timing jitter of electronics, and should find applications ranging from high-speed wireless to defence electronics. PMID:25581847

  9. Reconfigurable radio-frequency arbitrary waveforms synthesized in a silicon photonic chip.

    PubMed

    Wang, Jian; Shen, Hao; Fan, Li; Wu, Rui; Niu, Ben; Varghese, Leo T; Xuan, Yi; Leaird, Daniel E; Wang, Xi; Gan, Fuwan; Weiner, Andrew M; Qi, Minghao

    2015-01-12

    Photonic methods of radio-frequency waveform generation and processing can provide performance advantages and flexibility over electronic methods due to the ultrawide bandwidth offered by the optical carriers. However, bulk optics implementations suffer from the lack of integration and slow reconfiguration speed. Here we propose an architecture of integrated photonic radio-frequency generation and processing and implement it on a silicon chip fabricated in a semiconductor manufacturing foundry. Our device can generate programmable radio-frequency bursts or continuous waveforms with only the light source, electrical drives/controls and detectors being off-chip. It modulates an individual pulse in a radio-frequency burst within 4 ns, achieving a reconfiguration speed three orders of magnitude faster than thermal tuning. The on-chip optical delay elements offer an integrated approach to accurately manipulating individual radio-frequency waveform features without constraints set by the speed and timing jitter of electronics, and should find applications ranging from high-speed wireless to defence electronics.

  10. HEPS-BPIX, a single photon counting pixel detector with a high frame rate for the HEPS project

    NASA Astrophysics Data System (ADS)

    Wei, Wei; Zhang, Jie; Ning, Zhe; Lu, Yunpeng; Fan, Lei; Li, Huaishen; Jiang, Xiaoshan; Lan, Allan K.; Ouyang, Qun; Wang, Zheng; Zhu, Kejun; Chen, Yuanbo; Liu, Peng

    2016-11-01

    China's next generation light source, named the High Energy Photon Source (HEPS), is currently under construction. HEPS-BPIX (HEPS-Beijing PIXel) is a dedicated pixel readout chip that operates in single photon counting mode for X-ray applications in HEPS. Designed using CMOS 0.13 μm technology, the chip contains a matrix of 104×72 pixels. Each pixel measures 150 μm×150 μm and has a counting depth of 20 bits. A bump-bonded prototyping detector module with a 300-μm thick silicon sensor was tested in the beamline of Beijing Synchrotron Radiation Facility. A fast stream of X-ray images was demonstrated, and a frame rate of 1.2 kHz was proven, with a negligible dead time. The test results showed an equivalent noise charge of 115 e- rms after bump bonding and a threshold dispersion of 55 e- rms after calibration.

  11. Nano-optical observation of cascade switching in a parallel superconducting nanowire single photon detector

    SciTech Connect

    Heath, Robert M. Tanner, Michael G.; Casaburi, Alessandro; Hadfield, Robert H.; Webster, Mark G.; San Emeterio Alvarez, Lara; Jiang, Weitao; Barber, Zoe H.; Warburton, Richard J.

    2014-02-10

    The device physics of parallel-wire superconducting nanowire single photon detectors is based on a cascade process. Using nano-optical techniques and a parallel wire device with spatially separate pixels, we explicitly demonstrate the single- and multi-photon triggering regimes. We develop a model for describing efficiency of a detector operating in the arm-trigger regime. We investigate the timing response of the detector when illuminating a single pixel and two pixels. We see a change in the active area of the detector between the two regimes and find the two-pixel trigger regime to have a faster timing response than the one-pixel regime.

  12. Narrow bandgap semiconducting silicides: Intrinsic infrared detectors on a silicon chip

    NASA Technical Reports Server (NTRS)

    Mahan, John E.

    1990-01-01

    Work done during the final report period is presented. The main technical objective was to achieve epitaxial growth on silicon of two semiconducting silicides, ReSi2 and CrSi2. ReSi2 thin films were grown on (001) silicon wafers by vacuum evaporation of rhenium onto hot substrates in ultrahigh vacuum. The preferred epitaxial relationship was found to be ReSi2(100)/Si(001) with ReSi2(010) parallel to Si(110). The lattice matching consists of a common unit mesh of 120 A(sup 2) area, and a mismatch of 1.8 percent. Transmission electron microscopy revealed the existence of rotation twins corresponding to two distinct but equivalent azimuthal orientations of the common unit mesh. MeV He(+) backscattering spectrometry revealed a minimum channeling yield of 2 percent for an approximately 1,500 A thick film grown at 650 C. Although the lateral dimension of the twins is on the order of 100 A, there is a very high degree of alignment between the ReSi2(100) and the Si(001) planes. Highly oriented films of CrSi2 were grown on (111) silicon substrates, with the matching crystallographic faces being CrSi2(001)/Si(111). The reflection high-energy electron diffraction (RHEED) patterns of the films consist of sharp streaks, symmetrically arranged. The predominant azimuthal orientation of the films was determined to be CrSi2(210) parallel to Si(110). This highly desirable heteroepitaxial relationship has been obtained previously by others; it may be described with a common unit mesh of 51 A(sup 2) and mismatch of 0.3 percent. RHEED also revealed the presence of limited film regions of a competing azimuthal orientation, CrSi2(110) parallel to Si(110). A channeling effect for MeV He(+) ions was not found for this material. Potential commercial applications of this research may be found in silicon-integrated infrared detector arrays. Optical characterizations showed that semiconducting ReSi2 is a strong absorber of infrared radiation, with the adsorption constant increasing above 2 x

  13. Development of a large-area silicon α-particle detector.

    PubMed

    Tran, Linh T; Prokopovich, Dale A; Lerch, Michael L F; Petasecca, Marco; Siegele, Rainer; Reinhard, Mark I; Perevertaylo, Vladimir; Rosenfeld, Anatoly B

    2014-09-01

    Circular ion-implanted silicon detector of α-particles with a large, 5-cm(2), sensitive area has been developed. An advantage of the detector is that the detector surface is easily cleanable with chemicals. The hardened surface of the detector shows no signs of deterioration of the spectroscopic and electrical characteristics upon repeated cleaning. The energy resolution along the diameters of the detector was (1.0±0.1)% for the 5.486-MeV α-particles. Detailed tests of the charge collection efficiency and uniformity of the detector entrance window were also performed with a 5.5-MeV He(2+) microbeam.

  14. Micrometric Position Monitoring Using Fiber Bragg Grating Sensors in Silicon Detectors

    NASA Astrophysics Data System (ADS)

    Basile, E.; Bellucci, F.; Benussi, L.; Bertani, M.; Bianco, S.; Caponero, M. A.; Colonna, D.; di Falco, F.; Fabbri, F. L.; Felli, F.; Giardoni, M.; La Monaca, A.; Massa, F.; Mensitieri, G.; Ortenzi, B.; Pallotta, M.; Paolozzi, A.; Passamonti, L.; Pierluigi, D.; Pucci, C.; Russo, A.; Saviano, G.

    2006-04-01

    We show R&D results including long term stability, resolution, radiation hardness and characterization of Fiber Bragg Grating sensors used to monitor structure deformation, repositioning, and surveying of silicon detectors in High Energy Physics.

  15. Stacked silicide/silicon mid- to long-wavelength infrared detector

    DOEpatents

    Maserjian, Joseph

    1990-03-13

    The use of stacked Schottky barriers (16) with epitaxially grown thin silicides (10) combined with selective doping (22) of the barriers provides high quantum efficiency infrared detectors (30) at longer wavelengths that is compatible with existing silicon VLSI technology.

  16. Fine Grained Silicon-Tungsten Calorimetry for a Linear Collider Detector

    SciTech Connect

    Strom, D.; Frey, R.; Breidenbach, M.; Freytag, D.; Graf, N.; Haller, G.; Milgrome, O.; Radeka, V.; /Brookhaven

    2006-02-08

    A fine grained silicon-tungsten calorimeter is ideal for use as the electromagnetic calorimeter in a linear collider detector optimized for particle-flow reconstruction. We are designing a calorimeter that is based on readout chips which are bump bonded to the silicon wafers that serve as the active medium in the calorimeter. By using integrated electronics we plan to demonstrate that fine granularity can be achieved at a reasonable price. Our design minimizes the gap between tungsten layers leading to a small Moliere radius, an important figure of merit for particle-flow detectors. Tests of the silicon detectors to be used in a test beam prototype as well as timing measurements based on similar silicon detectors are discussed.

  17. Tailoring the optical constants in single-crystal silicon with embedded silver nanostructures for advanced silicon photonics applications

    SciTech Connect

    Akhter, Perveen; Huang, Mengbing Spratt, William; Kadakia, Nirag; Amir, Faisal

    2015-03-28

    Plasmonic effects associated with metal nanostructures are expected to hold the key to tailoring light emission/propagation and harvesting solar energy in materials including single crystal silicon which remains the backbone in the microelectronics and photovoltaics industries but unfortunately, lacks many functionalities needed for construction of advanced photonic and optoelectronics devices. Currently, silicon plasmonic structures are practically possible only in the configuration with metal nanoparticles or thin film arrays on a silicon surface. This does not enable one to exploit the full potential of plasmonics for optical engineering in silicon, because the plasmonic effects are dominant over a length of ∼50 nm, and the active device region typically lies below the surface much beyond this range. Here, we report on a novel method for the formation of silver nanoparticles embedded within a silicon crystal through metal gettering from a silver thin film deposited at the surface to nanocavities within the Si created by hydrogen ion implantation. The refractive index of the Ag-nanostructured layer is found to be 3–10% lower or higher than that of silicon for wavelengths below or beyond ∼815–900 nm, respectively. Around this wavelength range, the optical extinction values increase by a factor of 10–100 as opposed to the pure silicon case. Increasing the amount of gettered silver leads to an increased extinction as well as a redshift in wavelength position for the resonance. This resonance is attributed to the surface plasmon excitation of the resultant silver nanoparticles in silicon. Additionally, we show that the profiles for optical constants in silicon can be tailored by varying the position and number of nanocavity layers. Such silicon crystals with embedded metal nanostructures would offer novel functional base structures for applications in silicon photonics, optoelectronics, photovoltaics, and plasmonics.

  18. Tailoring the optical constants in single-crystal silicon with embedded silver nanostructures for advanced silicon photonics applications

    NASA Astrophysics Data System (ADS)

    Akhter, Perveen; Huang, Mengbing; Spratt, William; Kadakia, Nirag; Amir, Faisal

    2015-03-01

    Plasmonic effects associated with metal nanostructures are expected to hold the key to tailoring light emission/propagation and harvesting solar energy in materials including single crystal silicon which remains the backbone in the microelectronics and photovoltaics industries but unfortunately, lacks many functionalities needed for construction of advanced photonic and optoelectronics devices. Currently, silicon plasmonic structures are practically possible only in the configuration with metal nanoparticles or thin film arrays on a silicon surface. This does not enable one to exploit the full potential of plasmonics for optical engineering in silicon, because the plasmonic effects are dominant over a length of ˜50 nm, and the active device region typically lies below the surface much beyond this range. Here, we report on a novel method for the formation of silver nanoparticles embedded within a silicon crystal through metal gettering from a silver thin film deposited at the surface to nanocavities within the Si created by hydrogen ion implantation. The refractive index of the Ag-nanostructured layer is found to be 3-10% lower or higher than that of silicon for wavelengths below or beyond ˜815-900 nm, respectively. Around this wavelength range, the optical extinction values increase by a factor of 10-100 as opposed to the pure silicon case. Increasing the amount of gettered silver leads to an increased extinction as well as a redshift in wavelength position for the resonance. This resonance is attributed to the surface plasmon excitation of the resultant silver nanoparticles in silicon. Additionally, we show that the profiles for optical constants in silicon can be tailored by varying the position and number of nanocavity layers. Such silicon crystals with embedded metal nanostructures would offer novel functional base structures for applications in silicon photonics, optoelectronics, photovoltaics, and plasmonics.

  19. An Analysis of the Expected Degradation of Silicon Detectors in the Future Ultra High Energy Facilities

    NASA Astrophysics Data System (ADS)

    Lazanu, Ionel; Lazanu, Sorina

    2006-04-01

    In this contribution we discuss how to prepare some possible detectors - only silicon option being considered, for the new era of HEP challenges because the bulk displacement damage in the detector, consequence of irradiation, produces effects at the device level that limit their long time utilisation, increasing the leakage current and the depletion potential, eventually up to breakdown, and thus affecting the lifetime of detector systems. Physical phenomena that conduce to the degradation of the detector are analysed both at the material and device levels, and some predictions of the time degradation of silicon detectors in the radiation environments expected in the LHC machine upgrade in luminosity and energy as SLHC or VLHC, or at ULHC are given. Possible effects at the detector level after high energy cosmic proton bombardment are investigated as well. Time dependences of these device parameters are studied in conditions of continuous irradiation and the technological options for detector materials are discussed, to obtain devices harder to radiation.

  20. Solitons and spectral broadening in long silicon-on- insulator photonic wires.

    PubMed

    Ding, W; Benton, C; Gorbach, A V; Wadsworth, W J; Knight, J C; Skryabin, D V; Gnan, M; Sorrel, M; De La Rue, R M

    2008-03-03

    We report measurements and numerical modeling of spectral broadening and soliton propagation regimes in silicon-on-insulator photonic wire waveguides of 3 to 4 dispersion lengths using 100fs pump pulses. We also present accurate measurements of the group index and dispersion of the photonic wire.

  1. Final report on LDRD project : single-photon-sensitive imaging detector arrays at 1600 nm.

    SciTech Connect

    Childs, Kenton David; Serkland, Darwin Keith; Geib, Kent Martin; Hawkins, Samuel D.; Carroll, Malcolm S.; Klem, John Frederick; Sheng, Josephine Juin-Jye; Patel, Rupal K.; Bolles, Desta; Bauer, Tom M.; Koudelka, Robert

    2006-11-01

    The key need that this project has addressed is a short-wave infrared light detector for ranging (LIDAR) imaging at temperatures greater than 100K, as desired by nonproliferation and work for other customers. Several novel device structures to improve avalanche photodiodes (APDs) were fabricated to achieve the desired APD performance. A primary challenge to achieving high sensitivity APDs at 1550 nm is that the small band-gap materials (e.g., InGaAs or Ge) necessary to detect low-energy photons exhibit higher dark counts and higher multiplication noise compared to materials like silicon. To overcome these historical problems APDs were designed and fabricated using separate absorption and multiplication (SAM) regions. The absorption regions used (InGaAs or Ge) to leverage these materials 1550 nm sensitivity. Geiger mode detection was chosen to circumvent gain noise issues in the III-V and Ge multiplication regions, while a novel Ge/Si device was built to examine the utility of transferring photoelectrons in a silicon multiplication region. Silicon is known to have very good analog and GM multiplication properties. The proposed devices represented a high-risk for high-reward approach. Therefore one primary goal of this work was to experimentally resolve uncertainty about the novel APD structures. This work specifically examined three different designs. An InGaAs/InAlAs Geiger mode (GM) structure was proposed for the superior multiplication properties of the InAlAs. The hypothesis to be tested in this structure was whether InAlAs really presented an advantage in GM. A Ge/Si SAM was proposed representing the best possible multiplication material (i.e., silicon), however, significant uncertainty existed about both the Ge material quality and the ability to transfer photoelectrons across the Ge/Si interface. Finally a third pure germanium GM structure was proposed because bulk germanium has been reported to have better dark count properties. However, significant

  2. Photon detector configured to employ the Gunn effect and method of use

    DOEpatents

    Cich, Michael J

    2015-03-17

    Embodiments disclosed herein relate to photon detectors configured to employ the Gunn effect for detecting high-energy photons (e.g., x-rays and gamma rays) and methods of use. In an embodiment, a photon detector for detecting high-energy photons is disclosed. The photon detector includes a p-i-n semiconductor diode having a p-type semiconductor region, an n-type semiconductor region, and a compensated i-region disposed between the p-type semiconductor region and the n-type semiconductor region. The compensated i-region and has a width of about 100 .mu.m to about 400 .mu.m and is configured to exhibit the Gunn effect when the p-i-n semiconductor diode is forward biased a sufficient amount. The compensated i-region is doped to include a free carrier concentration of less than about 10.sup.10 cm.sup.-3.

  3. Production and assembly of the ALICE silicon drift detectors

    NASA Astrophysics Data System (ADS)

    Beolè, S.; Antinori, S.; Coli, S.; Crescio, E.; Falchieri, D.; Arteche Diaz, R.; Di Liberto, S.; Gabrielli, A.; Giraudo, G.; Giubellino, P.; Martoiu, S.; Masetti, G.; Mazza, G.; Mazzoni, M. A.; Meddi, F.; Rashevsky, A.; Riccati, L.; Rivetti, A.; Simonetti, L.; Toscano, L.; Tosello, F.; Urciuoli, G. M.; Vacchi, A.; Wheadon, R.

    2007-01-01

    The ALICE experiment at the LHC will study collisions of heavy-ions at a centre-of-mass energy ˜5.5 TeV per nucleon. The main aim of the experiment is to study in detail the behaviour of nuclear matter at high densities and temperatures, in view of probing deconfinement and chiral symmetry restoration. Silicon Drift Detectors (SDDs) have been selected to equip the two intermediate layers of the ALICE Inner Tracking System (ITS) [ALICE Collaboration, Technical Design Report, CERN/LHCC 99-12], since they couple a very good multi-track capability with dE/dx information and excellent spatial resolution as described in [E. Gatti, P. Rehak, Nucl. Instr. and Meth. A 225 (1984) 608; S. Beolé, et al., Nucl. Instr. and Meth. A 377 (1996) 393; S. Beolé, et al., Il Nuovo Cimento 109A (9) (1996)]. In this paper we describe the different components of the SDD system as well as the different procedure of the system assembly.

  4. Role of the density, density effect and mean excitation energy in solid-state detectors for small photon fields.

    PubMed

    Andreo, Pedro; Benmakhlouf, Hamza

    2017-02-21

    A number of recent publications on small photon beam dosimetry aim at contributing to the understanding of the response of solid-state detectors in small fields. Some of them assign the difference in response to the mass density, or to the electron density, of the sensitive detector material relative to that of water. This work analyses the role of the mass and electron density ([Formula: see text]), density effect (δ) and mean excitation energy (I-value) of some detector materials in a 6 MV photon beam of 0.5 cm radius, its rationale being that the response of a detector depends critically on the stopping-power ratio detector-to-water. The influence on the detector response of volume scaling by electron density, and of electron single and multiple scattering, is also investigated. Detector materials are water, diamond and silicon, and additional materials are included for consistency in the analysis. A detailed analysis on the ([Formula: see text]) dependence of stopping-power ratios shows that the density effect δ depends both on the electron density and on the I-value of the medium, but not on the mass density ρ alone as is usually assumed. This leads to a double dependence of stopping-power ratios on the I-value and questions the adequacy of a 'density perturbation factor' or of common interpretations of detector response in terms of ρ alone. Differences in response can be described in terms of the variation of stopping power ratios detector-to-water, mainly due to different I-values and to a lesser extent to different values of electron density. It is found that at low energies the trend of Monte Carlo-calculated electron fluence spectra inside the detector materials depends solely on their I-values. No dependence on mass density or density effect alone is observed at any energy. The trend of restricted-cema ratios to water (as a substitute of absorbed dose ratios) follows that of stopping-power ratios at 1 MeV, the most probable energy of differential

  5. A Ring Artifact Correction Method: Validation by Micro-CT Imaging with Flat-Panel Detectors and a 2D Photon-Counting Detector

    PubMed Central

    Eldib, Mohamed Elsayed; Hegazy, Mohamed; Mun, Yang Ji; Cho, Myung Hye; Cho, Min Hyoung; Lee, Soo Yeol

    2017-01-01

    We introduce an efficient ring artifact correction method for a cone-beam computed tomography (CT). In the first step, we correct the defective pixels whose values are close to zero or saturated in the projection domain. In the second step, we compute the mean value at each detector element along the view angle in the sinogram to obtain the one-dimensional (1D) mean vector, and we then compute the 1D correction vector by taking inverse of the mean vector. We multiply the correction vector with the sinogram row by row over all view angles. In the third step, we apply a Gaussian filter on the difference image between the original CT image and the corrected CT image obtained in the previous step. The filtered difference image is added to the corrected CT image to compensate the possible contrast anomaly that may appear due to the contrast change in the sinogram after removing stripe artifacts. We applied the proposed method to the projection data acquired by two flat-panel detectors (FPDs) and a silicon-based photon-counting X-ray detector (PCXD). Micro-CT imaging experiments of phantoms and a small animal have shown that the proposed method can greatly reduce ring artifacts regardless of detector types. Despite the great reduction of ring artifacts, the proposed method does not compromise the original spatial resolution and contrast. PMID:28146088

  6. A Ring Artifact Correction Method: Validation by Micro-CT Imaging with Flat-Panel Detectors and a 2D Photon-Counting Detector.

    PubMed

    Eldib, Mohamed Elsayed; Hegazy, Mohamed; Mun, Yang Ji; Cho, Myung Hye; Cho, Min Hyoung; Lee, Soo Yeol

    2017-01-30

    We introduce an efficient ring artifact correction method for a cone-beam computed tomography (CT). In the first step, we correct the defective pixels whose values are close to zero or saturated in the projection domain. In the second step, we compute the mean value at each detector element along the view angle in the sinogram to obtain the one-dimensional (1D) mean vector, and we then compute the 1D correction vector by taking inverse of the mean vector. We multiply the correction vector with the sinogram row by row over all view angles. In the third step, we apply a Gaussian filter on the difference image between the original CT image and the corrected CT image obtained in the previous step. The filtered difference image is added to the corrected CT image to compensate the possible contrast anomaly that may appear due to the contrast change in the sinogram after removing stripe artifacts. We applied the proposed method to the projection data acquired by two flat-panel detectors (FPDs) and a silicon-based photon-counting X-ray detector (PCXD). Micro-CT imaging experiments of phantoms and a small animal have shown that the proposed method can greatly reduce ring artifacts regardless of detector types. Despite the great reduction of ring artifacts, the proposed method does not compromise the original spatial resolution and contrast.

  7. Full band structure calculation of two-photon indirect absorption in bulk silicon

    SciTech Connect

    Cheng, J. L.; Rioux, J.; Sipe, J. E.

    2011-03-28

    Degenerate two-photon indirect absorption in silicon is an important limiting effect on the use of silicon structures for all-optical information processing at telecommunication wavelengths. We perform a full band structure calculation to investigate two-photon indirect absorption in bulk silicon, using a pseudopotential description of the energy bands and an adiabatic bond charge model to describe phonon dispersion and polarization. Our results agree well with some recent experimental results. The transverse acoustic/optical phonon-assisted processes dominate.

  8. THGEM-based photon detectors for the upgrade of COMPASS RICH-1

    NASA Astrophysics Data System (ADS)

    Alexeev, M.; Birsa, R.; Bradamante, F.; Bressan, A.; Büchele, M.; Chiosso, M.; Ciliberti, P.; Dalla Torre, S.; Dasgupta, S.; Denisov, O.; Duic, V.; Finger, M.; Finger, M.; Fischer, H.; Giorgi, M.; Gobbo, B.; Gregori, M.; Herrmann, F.; Königsmann, K.; Levorato, S.; Maggiora, A.; Martin, A.; Menon, G.; Nerling, F.; Novakova, K.; Novy, J.; Panzieri, D.; Pereira, F. A.; Santos, C. A.; Sbrizzai, G.; Schiavon, P.; Schill, C.; Schopferer, S.; Slunecka, M.; Sozzi, F.; Steiger, L.; Sulc, M.; Takekawa, S.; Tessarotto, F.; Veloso, J. F. C. A.

    2013-12-01

    New Cherenkov photon detectors are being developed for the upgrade of COMPASS RICH-1. The detectors are based on THGEMs, arranged in a three layer architecture, with a CsI film on the first layer acting as a reflective photocathode. The response of THGEMs with various geometries under different conditions has been studied and photon detector prototypes have been built, tested in laboratory and operated during test beam runs providing a typical gain of 105 and a time resolution of better than 10 ns. A photon detector prototype with 300×300 mm2 active area, operated at the CERN PS T10 test beam in November 2012, has confirmed the validity of this novel technology and has allowed further studies of the detector response.

  9. Combination of current-integrating/photon-counting detector modules for spectral CT.

    PubMed

    Chu, Jiyang; Cong, Wenxiang; Li, Liang; Wang, Ge

    2013-10-07

    Inspired by compressive sensing theory and spectral detection technology, here we propose a novel design of a CT detector array that uses current-integrating/photon-counting modules in an interlacing fashion so that strengths of each detector type can be synergistically combined. For geometrical symmetry, an evenly alternating pattern is initially assumed for these detector modules to form a hybrid detector array. While grayscale detector modules acquire regular raw data in a large dynamic range cost-effectively, spectral detector modules simultaneously sense energy-discriminative data in multiple energy bins. A split Bregman iterative algorithm is developed for spectral CT reconstruction from projection data of an object collected with the hybrid detector array. With mathematical phantoms, an optimal ratio of the number of the spectral elements over the number of grayscale elements is determined based on classic image quality evaluation. This hybrid detector array is capable of delivering a performance comparable with that of a full spectral detector array.

  10. High-Q silicon-on-insulator slot photonic crystal cavity infiltrated by a liquid

    SciTech Connect

    Caër, Charles; Le Roux, Xavier; Cassan, Eric

    2013-12-16

    We report the experimental realization of a high-Q slot photonic crystal cavity in Silicon-On-Insulator (SOI) configuration infiltrated by a liquid. Loaded Q-factor of 23 000 is measured at telecom wavelength. The intrinsic quality factor inferred from the transmission spectrum is higher than 200 000, which represents a record value for slot photonic crystal cavities on SOI, whereas the maximum of intensity of the cavity is roughly equal to 20% of the light transmitted in the waveguide. This result makes filled slot photonic crystal cavities very promising for silicon-based light emission and ultrafast nonlinear optics.

  11. Feasibility of Amorphous Selenium Based Photon Counting Detectors for Digital Breast Tomosynthesis

    SciTech Connect

    Chen, J.; O'Connor, P.; Lehnert, J., De Geronimo, G., Dolazza, E., Tousignant, O., Laperriere, L., Greenspan, J., Zhao, W.

    2009-02-27

    Amorphous selenium (a-Se) has been incorporated successfully in direct conversion flat panel x-ray detectors, and has demonstrated superior image quality in screening mammography and digital breast tomosynthesis (DBT) under energy integration mode. The present work explores the potential of a-Se for photon counting detectors in DBT. We investigated major factors contributing to the variation in the charge collected by a pixel upon absorption of each x-ray photon. These factors included x-ray photon interaction, detector geometry, charge transport, and the pulse shaping and noise properties of the photon counting readout circuit. Experimental measurements were performed on a linear array test structure constructed by evaporating an a-Se layer onto an array of 100 {mu}m pitch strip electrodes, which are connected to a 32 channel low noise photon counting integrated circuit. The measured pulse height spectrum (PHS) under polychromatic xray exposure was interpreted quantitatively using the factors identified. Based on the understanding of a-Se photon counting performance, design parameters were proposed for a 2D detector with high quantum efficiency and count rate that could meet the requirements of photon counting detector for DBT.

  12. High Throughput, High Yield Fabrication of High Quantum Efficiency Back-Illuminated Photon Counting, Far UV, UV, and Visible Detector Arrays

    NASA Technical Reports Server (NTRS)

    Nikzad, Shouleh; Hoenk, M. E.; Carver, A. G.; Jones, T. J.; Greer, F.; Hamden, E.; Goodsall, T.

    2013-01-01

    In this paper we discuss the high throughput end-to-end post fabrication processing of high performance delta-doped and superlattice-doped silicon imagers for UV, visible, and NIR applications. As an example, we present our results on far ultraviolet and ultraviolet quantum efficiency (QE) in a photon counting, detector array. We have improved the QE by nearly an order of magnitude over microchannel plates (MCPs) that are the state-of-the-art UV detectors for many NASA space missions as well as defense applications. These achievements are made possible by precision interface band engineering of Molecular Beam Epitaxy (MBE) and Atomic Layer Deposition (ALD).

  13. Single Crystal as a High Energy Photons Detector for γ-Astronomy

    NASA Astrophysics Data System (ADS)

    Galper, A. M.; Kalashnikov, N. P.; Mulyarchik, E. I.; Olchak, A. S.

    One of the important problems of modern astrophysics and gamma-astronomy is in designing detectors for high energy photons (more than 1 GeV) with high angular resolution. In this energy range the dominating phenomenon in interaction of photons with matter is the e-e+ pair production. High angular resolution can be achieved using single crystals as effective converters of photons into e-e+ pairs due to coherent production of pairs in the channeling regime.

  14. AFRL Nanotechnology Initiative: Hybrid Nanomaterials in Photonic Crystal Cavities for Multi-Spectral Infrared Detector Arrays

    DTIC Science & Technology

    2010-03-31

    INITIATIVE) HYBRID NANOMATERIALS IN PHOTONIC CRYSTAL CAVITIES FOR MULTI -SPECTRAL INFRARED DETECTOR ARRAYS 5b. GRANT NUMBER F A9550-06-1-0482 5c...IR) photodetector using hybrid nanornaterials in photonic crystal (PC) cavities for enhanced absorption at selected wavelengths. The simultaneous...infrared photodetection, quantum dots, photonic crystal cavities, matrix-assisted pulsed laser evaporation 16. SECURITY CLASSIFICATION OF: 17. LIMITATION OF

  15. Improvement in breakdown characteristics with multiguard structures in microstrip silicon detectors for CMS

    NASA Astrophysics Data System (ADS)

    Bacchetta, N.; Bisello, D.; Candelori, A.; Da Rold, M.; Descovich, M.; Kaminski, A.; Messineo, A.; Rizzo, F.; Verzellesi, G.

    2001-04-01

    To obtain full charge collection the CMS silicon detectors should be able to operate at high bias voltage. We observed that multiguard structures enhance the breakdown performance of the devices on several tens of baby detectors designed for CMS. The beneficial effects of the multiguard structures still remains after the strong neutron irradiation performed to simulate the operation at the LHC.

  16. Reactions induced by {sup 7}Li beam and optimization of silicon detector telescope

    SciTech Connect

    Uroic, M.; Milin, M.; Di Pietro, A.; Figuera, P.; Fisichella, M.; Lattuada, M.; Martel, I.; Miljanic, D.; Pellegriti, M. G.; Prepolec, L.; Sanchez Benitez, A. M.; Scuderi, V.; Soic, N.; Strano, E.; Torresi, D.

    2012-10-20

    Focus of this article is put on a method of compensating for non-uniformity of 50{mu}m thin silicon detectors, rather than measurement results. The same high sensitivity of particle identification on thin-detector thickness enables to accurately model thickness variation using the measurement data, rather than measuring the thickness separately.

  17. Photon Counting Detectors for the 1.0 - 2.0 Micron Wavelength Range

    NASA Technical Reports Server (NTRS)

    Krainak, Michael A.

    2004-01-01

    We describe results on the development of greater than 200 micron diameter, single-element photon-counting detectors for the 1-2 micron wavelength range. The technical goals include quantum efficiency in the range 10-70%; detector diameter greater than 200 microns; dark count rate below 100 kilo counts-per-second (cps), and maximum count rate above 10 Mcps.

  18. Low-voltage high-performance silicon photonic devices and photonic integrated circuits operating up to 30 Gb/s.

    PubMed

    Kim, Gyungock; Park, Jeong Woo; Kim, In Gyoo; Kim, Sanghoon; Kim, Sanggi; Lee, Jong Moo; Park, Gun Sik; Joo, Jiho; Jang, Ki-Seok; Oh, Jin Hyuk; Kim, Sun Ae; Kim, Jong Hoon; Lee, Jun Young; Park, Jong Moon; Kim, Do-Won; Jeong, Deog-Kyoon; Hwang, Moon-Sang; Kim, Jeong-Kyoum; Park, Kyu-Sang; Chi, Han-Kyu; Kim, Hyun-Chang; Kim, Dong-Wook; Cho, Mu Hee

    2011-12-19

    We present high performance silicon photonic circuits (PICs) defined for off-chip or on-chip photonic interconnects, where PN depletion Mach-Zehnder modulators and evanescent-coupled waveguide Ge-on-Si photodetectors were monolithically integrated on an SOI wafer with CMOS-compatible process. The fabricated silicon PIC(off-chip) for off-chip optical interconnects showed operation up to 30 Gb/s. Under differential drive of low-voltage 1.2 V(pp), the integrated 1 mm-phase-shifter modulator in the PIC(off-chip) demonstrated an extinction ratio (ER) of 10.5dB for 12.5 Gb/s, an ER of 9.1dB for 20 Gb/s, and an ER of 7.2 dB for 30 Gb/s operation, without adoption of travelling-wave electrodes. The device showed the modulation efficiency of V(π)L(π) ~1.59 Vcm, and the phase-shifter loss of 3.2 dB/mm for maximum optical transmission. The Ge photodetector, which allows simpler integration process based on reduced pressure chemical vapor deposition exhibited operation over 30 Gb/s with a low dark current of 700 nA at -1V. The fabricated silicon PIC(intra-chip) for on-chip (intra-chip) photonic interconnects, where the monolithically integrated modulator and Ge photodetector were connected by a silicon waveguide on the same chip, showed on-chip data transmissions up to 20 Gb/s, indicating potential application in future silicon on-chip optical network. We also report the performance of the hybrid silicon electronic-photonic IC (EPIC), where a PIC(intra-chip) chip and 0.13μm CMOS interface IC chips were hybrid-integrated.

  19. Smart readout of silicon drift detector using ON-LINE fuzzy logic

    NASA Astrophysics Data System (ADS)

    Russo, G. V.; Becciani, U.; Caponetto, L.; Caligiore, C.; Lo Nigro, L.; Presti, D. Lo; Panebianco, S.; Pappalardo, L.; Petta, C.; Randazzo, N.; Reito, S.; Russo, M.

    2000-04-01

    A Silicon Drift Detector Front-End and a Smart Readout is proposed for ALICE's ITS readout. It is based on a dedicated Fuzzy Processor. Four main aims can be achieved: a significant reduction of data volume toward mass storage; less matter across the particle trajectories; ON-LINE personalised calibration of the detector against temperature effects; more insensitivity to noise effect compared with traditional systems for both position and charge measurement. The system fulfils the requirement for ALICE Inner Tracker System Silicon Drift Detectors. This paper aims at illustrating to the Physics community the work presently done that has engaged many people for a long time.

  20. The Los Alamos Photon Counting Detector Debris Detection Project: An update

    SciTech Connect

    Ho, Cheng; Priedhorsky, W.; Baron, M.; Casperson, D.

    1995-03-01

    At Los Alamos, the authors have been pursuing a project for space debris detection using a photon counting detector with high spatial and time resolution. By exploiting the three dimensionality of the high quality data, they expect to be able to detect an orbiting object of size below 2 cm, using a moderate size telescope and state-of-the-art photon counting detector. A working tube has been used to collect skyward looking data during dusk. In this paper, they discuss the progress in the development of detector and data acquisition system. They also report on analysis and results of these data sets.

  1. Radiation Hard Silicon Particle Detectors for Phase-II LHC Trackers

    NASA Astrophysics Data System (ADS)

    Oblakowska-Mucha, A.

    2017-02-01

    The major LHC upgrade is planned after ten years of accelerator operation. It is foreseen to significantly increase the luminosity of the current machine up to 1035 cm‑2s‑1 and operate as the upcoming High Luminosity LHC (HL-LHC) . The major detectors upgrade, called the Phase-II Upgrade, is also planned, a main reason being the aging processes caused by severe particle radiation. Within the RD50 Collaboration, a large Research and Development program has been underway to develop silicon sensors with sufficient radiation tolerance for HL-LHC trackers. In this summary, several results obtained during the testing of the devices after irradiation to HL-LHC levels are presented. Among the studied structures, one can find advanced sensors types like 3D silicon detectors, High-Voltage CMOS technologies, or sensors with intrinsic gain (LGAD). Based on these results, the RD50 Collaboration gives recommendation for the silicon detectors to be used in the detector upgrade.

  2. Systematic investigation of background sources in neutron flux measurements with a proton-recoil silicon detector

    NASA Astrophysics Data System (ADS)

    Marini, P.; Mathieu, L.; Acosta, L.; Aïche, M.; Czajkowski, S.; Jurado, B.; Tsekhanovich, I.

    2017-01-01

    Proton-recoil detectors (PRDs), based on the well known standard H(n,p) elastic scattering cross section, are the preferred instruments to perform precise quasi-absolute neutron flux measurements above 1 MeV. The limitations of using a single silicon detector as PRD at a continuous neutron beam facility are investigated, with the aim of extending such measurements to neutron energies below 1 MeV. This requires a systematic investigation of the background sources affecting the neutron flux measurement. Experiments have been carried out at the AIFIRA facility to identify these sources. A study on the role of the silicon detector thickness on the background is presented and an energy limit on the use of a single silicon detector to achieve a neutron flux precision better than 1% is given.

  3. Design and testing of an innovative slim-edge termination for silicon radiation detectors

    NASA Astrophysics Data System (ADS)

    Povoli, M.; Bagolini, A.; Boscardin, M.; Dalla Betta, G.-F.; Giacomini, G.; Mattedi, F.; Mendicino, R.; Zorzi, N.

    2013-11-01

    Silicon detectors with reduced or no dead volume along the edges have been attracting a lot of interest in the past few years in many different fields. High Energy Physics (HEP) experiments are demanding this feature to ease the assembly of the innermost tracking layers, where space and material budget are usually a concern. At the same time, other applications like X-Ray imaging, are starting to use matrixes of silicon detectors to cover increasingly larger areas and, in order to do so in a seamless way, minimum edge extension is required. In this paper we report on the design and testing of a new edge termination for silicon 3D detectors able to reduce the edge extension to about 50 μm without increasing the fabrication complexity. In addition, the same edge termination can also be applied to planar detectors with little additional process complexity.

  4. The effect of magnetic field on the intrinsic detection efficiency of superconducting single-photon detectors

    SciTech Connect

    Renema, J. J.; Rengelink, R. J.; Komen, I.; Wang, Q.; Kes, P.; Aarts, J.; Exter, M. P. van; Dood, M. J. A. de; Gaudio, R.; Hoog, K. P. M. op 't; Zhou, Z.; Fiore, A.; Sahin, D.; Driessen, E. F. C.

    2015-03-02

    We experimentally investigate the effect of a magnetic field on photon detection in superconducting single-photon detectors (SSPDs). At low fields, the effect of a magnetic field is through the direct modification of the quasiparticle density of states of the superconductor, and magnetic field and bias current are interchangeable, as is expected for homogeneous dirty-limit superconductors. At the field where a first vortex enters the detector, the effect of the magnetic field is reduced, up until the point where the critical current of the detector starts to be determined by flux flow. From this field on, increasing the magnetic field does not alter the detection of photons anymore, whereas it does still change the rate of dark counts. This result points at an intrinsic difference in dark and photon counts, and also shows that no enhancement of the intrinsic detection efficiency of a straight SSPD wire is achievable in a magnetic field.

  5. SiPMs characterization and selection for the DUNE far detector photon detection system

    NASA Astrophysics Data System (ADS)

    Sun, Y.; Maricic, J.

    2016-01-01

    The Deep Underground Neutrino Experiment (DUNE) together with the Long Baseline Neutrino Facility (LBNF) hosted at the Fermilab will provide a unique, world-leading program for the exploration of key questions at the forefront of neutrino physics and astrophysics. CP violation in neutrino flavor mixing is one of its most important potential discoveries. Additionally, the experiment will determine the neutrino mass hierarchy and precisely measure the neutrino mixing parameters which may potentially reveal new fundamental symmetries of nature. Moreover, the DUNE is also designed for the observation of nucleon decay and supernova burst neutrinos. The photon detection (PD) system in the DUNE far detector provides trigger for cosmic backgrounds, enhances supernova burst trigger efficiency and improves the energy resolution of the detector. The DUNE adopts the technology of liquid argon time projection chamber (LArTPC) that requires the PD sensors, silicon photomultipliers (SiPM), to be carefully chosen to not only work properly in LAr temperature, but also meet certain specifications for the life of the experiment. A comprehensive testing of SiPMs in cryostat is necessary since the datasheet provided by the manufactures in the market does not cover this temperature regime. This paper gives the detailed characterization results of SenSL C-Series 60035 SiPMs, including gain, dark count rate (DCR), cross-talk and after-pulse rate. Characteristic studies on SiPMs from other vendors are also discussed in order to avoid any potential problems associated with using a single source. Moreover, the results of the ongoing mechanical durability tests are shown for the current candidate, SenSL B/C-Series 60035 SiPMs.

  6. Optimisation of output factor measurements using the Magic Plate 512 silicon dosimeter array in small megavoltage photon fields

    NASA Astrophysics Data System (ADS)

    Utitsarn, K.; Alrowaili, Z. A.; Stansook, N.; Lerch, M.; Petasecca, M.; Carolan, M.; Rosenfeld, A.

    2017-01-01

    We evaluate the impact of an air gap and optimization of this air gap for the MP512 silicon detector array when operated in dosimetry mode for small photon field measurements in solid water. We present output factor measurements for 6MV and 10 MV photon beams with the square field sizes ranging from 0.5 to 10 cm2. The size of the air gap above the MP512 detector was changed from 0.5, 1.0, 1.2, 2.0 and 2.6 mm. We compare the output factors measurements of the MP512 with EBT3 film and the MOSkin dosimeter. For the two photon energies investigated, we find that the output factor measured by the MP512 reduce with increasing air gap and reducing of field size. The reduction in output factor is most pronounced for the 0.5 and 1 cm2 field sizes. The air gap of 0.5 mm and 1.2 mm showed good agreement with the EBT3 film and MOSkin output factor for 6 and 10 MV photon fields, respectively. The negligible effect on dosimetry for the field sizes larger than 4x4 cm2 demonstrates that the electronic disequilibrium caused by small air gap only influences the dosimetry measurements for small fields. The study shows that the output factor reduction is enhanced by increasing of air gap and demonstrates that the optimal air gap for the MP512 at 6 and 10 MV photon fields is 0.5mm.

  7. Spectroscopic micro-tomography of metallic-organic composites by means of photon-counting detectors

    NASA Astrophysics Data System (ADS)

    Pichotka, M.; Jakubek, J.; Vavrik, D.

    2015-12-01

    The presumed capabilities of photon counting detectors have aroused major expectations in several fields of research. In the field of nuclear imaging ample benefits over standard detectors are to be expected from photon counting devices. First of all a very high contrast, as has by now been verified in numerous experiments. The spectroscopic capabilities of photon counting detectors further allow material decomposition in computed tomography and therefore inherently adequate beam hardening correction. For these reasons measurement setups featuring standard X-ray tubes combined with photon counting detectors constitute a possible replacement of the much more cost intensive tomographic setups at synchrotron light-sources. The actual application of photon counting detectors in radiographic setups in recent years has been impeded by a number of practical issues, above all by restrictions in the detectors size. Currently two tomographic setups in Czech Republic feature photon counting large-area detectors (LAD) fabricated in Prague. The employed large area hybrid pixel-detector assemblies [1] consisting of 10×10/10×5 Timepix devices have a surface area of 143×143 mm2 / 143×71,5 mm2 respectively, suitable for micro-tomographic applications. In the near future LAD devices featuring the Medipix3 readout chip as well as heavy sensors (CdTe, GaAs) will become available. Data analysis is obtained by a number of in house software tools including iterative multi-energy volume reconstruction.In this paper tomographic analysis of of metallic-organic composites is employed to illustrate the capabilities of our technology. Other than successful material decomposition by spectroscopic tomography we present a method to suppress metal artefacts under certain conditions.

  8. Energy response calibration of photon-counting detectors using X-ray fluorescence: a feasibility study

    PubMed Central

    Cho, H-M; Ding, H; Ziemer, BP; Molloi, S

    2014-01-01

    Accurate energy calibration is critical for the application of energy-resolved photon-counting detectors in spectral imaging. The aim of this study is to investigate the feasibility of energy response calibration and characterization of a photon-counting detector using X-ray fluorescence. A comprehensive Monte Carlo simulation study was performed using Geant4 Application for Tomographic Emission (GATE) to investigate the optimal technique for X-ray fluorescence calibration. Simulations were conducted using a 100 kVp tungsten-anode spectra with 2.7 mm Al filter for a single pixel cadmium telluride (CdTe) detector with 3 × 3 mm2 in detection area. The angular dependence of X-ray fluorescence and scatter background was investigated by varying the detection angle from 20° to 170° with respect to the beam direction. The effects of the detector material, shape, and size on the recorded X-ray fluorescence were investigated. The fluorescent material size effect was considered with and without the container for the fluorescent material. In order to provide validation for the simulation result, the angular dependence of X-ray fluorescence from five fluorescent materials was experimentally measured using a spectrometer. Finally, eleven of the fluorescent materials were used for energy calibration of a CZT-based photon-counting detector. The optimal detection angle was determined to be approximately at 120° with respect to the beam direction, which showed the highest fluorescence to scatter ratio (FSR) with a weak dependence on the fluorescent material size. The feasibility of X-ray fluorescence for energy calibration of photon-counting detectors in the diagnostic X-ray energy range was verified by successfully calibrating the energy response of a CZT-based photon-counting detector. The results of this study can be used as a guideline to implement the X-ray fluorescence calibration method for photon-counting detectors in a typical imaging laboratory. PMID:25369288

  9. Studies of double-sided silicon microstrip detectors

    SciTech Connect

    Seidel, S.C.; Bruner, N.L.; Frautsch, M.A.; Hoeferkamp, M.R.; Patton, A.

    1996-03-01

    The electrical characteristics of detectors manufactured by SINTEF/SI with a variety of geometrical and processing options have been investigated. The detectors` leakage current, depletion voltage, bias resistance, interstrip resistance, coupling capacitance, and coupling capacitor breakdown voltage were studied.

  10. Studies of double-sided silicon microstrip detectors

    NASA Astrophysics Data System (ADS)

    Seidel, S. C.; Bruner, N. L.; Frautschi, M. A.; Hoeferkamp, M. R.; Patton, A.

    1996-02-01

    The electrical characteristics of detectors manufactured by SINTEF/SI with a variety of geometrical and processing options have been investigated. The detectors' leakage current, depletion voltage, bias resistance, interstrip, coupling capacitance, and coupling capacitor breakdown voltage were studied.

  11. Energy calibration of photon counting detectors using x-ray tube potential as a reference for material decomposition applications

    NASA Astrophysics Data System (ADS)

    Das, Mini; Kandel, Bigyan; Park, Chan Soo; Liang, Zhihua

    2015-03-01

    Photon counting spectral detectors (PCSD) with smaller pixels and efficient sensors are desirable in applications like material decomposition and phase contrast x-ray imaging where discrimination of small signals and fine structure may be desired. Charge sharing in PCSD increases with decreasing pixel sizes and increasing sensor thickness such that the energy calibration or utility of spectral information can become a major hurdle. Utility of a combination of high Z sensors and small pixel sizes in PCSD is limited without efficient threshold calibration and charge sharing mitigation. Here we explore the utility of x-ray tube kVp as a reference to achieve efficient and fast calibration of PCSDs. This calibration method itself does not require rearranging the imaging setup and is not impacted by charge sharing. Our preliminary results indicate that this method can be useful even in scenarios where metal fluorescence and radioactive source based calibration techniques may be practically impossible. Our results are validated using x-ray fluorescence based calibration for a Silicon detector with moderate charge sharing. Calibration of a particularly challenging case of a Medipix2 detector (55 μm pixel size) with a 1 mm thick CdTe sensor and a Medipix3 detector with CdTe sensor is also demonstrated. A cross validation with K-edge identification of Gd is also presented here.

  12. Silicon Photomultipliers, A New Device For Low Light Level Photon Detection

    SciTech Connect

    Moser, Hans-Guenther

    2006-10-27

    Silicon Photomultipliers (SiPM) are novel detectors for low level light detection based on arrays of avalanche photodiodes operating in Geiger mode. Offering good characteristics (fast response, high gain, photon counting capability, insensitivity to magnetic fields, low voltage operation) they have the potential to replace classical photomultipliers (PMT) in many applications. Drawbacks are dark rate and optical cross talk. Though their quantum efficiency is already comparable or better than that of bialkali PMT it is still limited by the structures on the light sensitive front surface. A new concept, presently developed at the Max-Planck semiconductor laboratory, allows boosting the efficiency to almost 100%. Using a fully depleted substrate the light enters through the unstructured backside. A drift diode structure collects the electrons on a small 'point like' avalanche structure for multiplication. Engineering the thin entrance window at the backside using antireflective layers a high efficiency can be achieved in a wide wavelength range (300-1000nm). The paper will summarize the status of front illuminated SiPMs and report on the development of the backside illuminated devices.

  13. Integrated Amorphous Silicon p-i-n Temperature Sensor for CMOS Photonics.

    PubMed

    Rao, Sandro; Pangallo, Giovanni; Della Corte, Francesco Giuseppe

    2016-01-06

    Hydrogenated amorphous silicon (a-Si:H) shows interesting optoelectronic and technological properties that make it suitable for the fabrication of passive and active micro-photonic devices, compatible moreover with standard microelectronic devices on a microchip. A temperature sensor based on a hydrogenated amorphous silicon p-i-n diode integrated in an optical waveguide for silicon photonics applications is presented here. The linear dependence of the voltage drop across the forward-biased diode on temperature, in a range from 30 °C up to 170 °C, has been used for thermal sensing. A high sensitivity of 11.9 mV/°C in the bias current range of 34-40 nA has been measured. The proposed device is particularly suitable for the continuous temperature monitoring of CMOS-compatible photonic integrated circuits, where the behavior of the on-chip active and passive devices are strongly dependent on their operating temperature.

  14. Silicon photonic crystal cavity enhanced second-harmonic generation from monolayer WSe2

    NASA Astrophysics Data System (ADS)

    Fryett, Taylor K.; Seyler, Kyle L.; Zheng, Jiajiu; Liu, Chang-Hua; Xu, Xiaodong; Majumdar, Arka

    2017-03-01

    Nano-resonators integrated with two-dimensional materials (e.g. transition metal dichalcogenides) have recently emerged as a promising nano-optoelectronic platform. Here we demonstrate resonator-enhanced second-harmonic generation (SHG) in tungsten diselenide using a silicon photonic crystal cavity. By pumping the device with ultrafast laser pulses near the cavity mode at the telecommunication wavelength, we observe a near visible SHG with a narrow linewidth and near unity linear polarization, originated from the coupling of the pump photon to the cavity mode. The observed SHG is enhanced by factor of ∼200 compared to a bare monolayer on silicon. Our results imply the efficacy of cavity integrated monolayer materials for nonlinear optics and the potential of building a silicon-compatible second-order nonlinear integrated photonic platform.

  15. Boron imaging with a microstrip silicon detector for applications in BNCT

    NASA Astrophysics Data System (ADS)

    Mattera, A.; Basilico, F.; Bolognini, D.; Borasio, P.; Cappelletti, P.; Chiari, P.; Conti, V.; Frigerio, M.; Gelosa, S.; Giannini, G.; Hasan, S.; Mascagna, V.; Mauri, P.; Monti, A. F.; Mozzanica, A.; Ostinelli, A.; Prest, M.; Scazzi, S.; Vallazza, E.; Zanini, A.

    2009-06-01

    Boron Neutron Capture Therapy (BNCT) is a radiotherapic technique exploiting the α particles produced after the irradiation of the isotope 10 of boron with thermal neutrons in the capture reaction B(n,α)710Li. It is used to treat tumours that for their features (radioresistance, extension, localization near vital organs) cannot be treated through conventional photon-beams radiotherapy. One of the main limitations of this technique is the lack of specificity (i.e. the ability of localizing in tumour cells, saving the healthy tissues) of the compounds used to carry the 10B isotope in the organs to be treated. This work, developed in the framework of the INFN PhoNeS project, describes the possibility of boron imaging performed exploiting the neutrons photoproduced by a linac (the Clinac 2100C/D of the S. Anna Hospital Radiotherapy Unit in Como, Italy) and detecting the α s with a non-depleted microstrip silicon detector: the result is a 1D scan of the boron concentration. Several boron doped samples have been analysed, from solutions of H3BO3 (reaching a minimum detectable amount of 25 ng of 10B) to biological samples of urine containing BPA and BSH (the two molecules currently used for the clinical trials in BNCT) in order to build kinetic curves (showing the absolute 10B concentration as a function of time). Further measurements are under way to test the imaging system with 10BPA-Fructose complex perfused human lung samples.

  16. Nanowires and sidewall Bragg gratings in silicon as enabling technologies for microwave photonic filters.

    PubMed

    Chen, Lawrence R; Li, Jia; Spasojevic, Mina; Adams, Rhys

    2013-08-26

    We describe the use of various silicon photonic device technologies to implement microwave photonic filters (MPFs). We demonstrate four-wave mixing in a silicon nanowire waveguide (SNW) to increase the number of taps for MPFs based on finite impulse response filter designs. Using a 12 mm long SNW reduces the footprint by five orders of magnitude compared to silica highly nonlinear fiber while only requiring approximately two times more input power. We also demonstrate optical delays based on serial sidewall Bragg grating arrays and step-chirped sidewall Bragg gratings in silicon waveguides. We obtain up to 63 ps delay in discrete steps from 15 ps to 32 ps over a wide bandwidth range from 33 nm to at least 62 nm. These components can be integrated with other silicon-based components such as integrated spectral shapers and modulators to realize a fully integrated MPF.

  17. Measurement of prompt photon cross-section with the ATLAS detector

    NASA Astrophysics Data System (ADS)

    Ishmukhametov, Renat

    The thesis presents the result of the measurement of the prompt photons production cross-section with the ATLAS detector on the Large Hadron Collider using 2010 data at 7 TeV center of mass energy. The measurement is done using two datasets, one for lower value of the transverse energy, another one is for the higher value of the transverse energy. A good agreement with the theoretical prediction is observed,The thesis presents the measurement of the prompt photon production cross-section with the ATLAS detector at the Large Hadron Collider using 2010 data at 7 TeV center of mass energy. The measurement is done using two datasets, and for different values of photon transverse energy, ET. The first measurement, made for photons with ET>15 GeV, uses 880 nb-1 of collision data, and the second measurement, relevant for photons with ET>45 GeV, uses 35 pb-1 of data. Good agreement with the theoretical prediction for the cross-section is observed, especially for the higher transverse energy photons. This thesis also contains the result of the measurement of the electronic crosstalk in the ATLAS liquid argon calorimeter, important for the photon calibration and calorimeter commissioning. especially with the higher transverse energy photons. The thesis also contains the results of the measurement of the electronic crosstalk in the ATLAS liquid argon calorimeter, important for the photon calibration and calorimeter commissioning.

  18. Electrical production testing of the D0 Silicon microstrip tracker detector modules

    SciTech Connect

    D0, SMT Production Testing Group; /Fermilab

    2006-03-01

    The D0 Silicon Microstrip Tracker (SMT) is the innermost system of the D0 detector in Run 2. It consists of 912 detector units, corresponding to 5 different types of assemblies, which add up to a system with 792,576 readout channels. The task entrusted to the Production Testing group was to thoroughly debug, test and grade each detector module before its installation in the tracker. This note describes the production testing sequence and the procedures by which the detector modules were electrically tested and characterized at the various stages of their assembly.

  19. Optical bistability with a repulsive optical force in coupled silicon photonic crystal membranes

    NASA Astrophysics Data System (ADS)

    Hui, Pui-Chuen; Woolf, David; Iwase, Eiji; Sohn, Young-Ik; Ramos, Daniel; Khan, Mughees; Rodriguez, Alejandro W.; Johnson, Steven G.; Capasso, Federico; Loncar, Marko

    2013-07-01

    We demonstrate actuation of a silicon photonic crystal membrane with a repulsive optical gradient force. The extent of the static actuation is extracted by examining the optical bistability as a combination of the optomechanical, thermo-optic, and photo-thermo-mechanical effects using coupled-mode theory. Device behavior is dominated by a repulsive optical force which results in displacements of ≈1 nm/mW. By employing an extended guided resonance which effectively eliminates multi-photon thermal and electronic nonlinearities, our silicon-based device provides a simple, non-intrusive solution to extending the actuation range of micro-electromechanical devices.

  20. Silicon nano-membrane based photonic crystal microcavities for high sensitivity bio-sensing.

    PubMed

    Lai, Wei-Cheng; Chakravarty, Swapnajit; Zou, Yi; Chen, Ray T

    2012-04-01

    We experimentally demonstrated photonic crystal microcavity based resonant sensors coupled to photonic crystal waveguides in silicon nano-membrane on insulator for chemical and bio-sensing. Linear L-type microcavities are considered. In contrast to cavities with small mode volumes, but low quality factors for bio-sensing, we showed increasing the length of the microcavity enhances the quality factor of the resonance by an order of magnitude and increases the resonance wavelength shift while retaining compact device characteristics. Q~26760 and sensitivity down to 15 ng/ml and ~110 pg/mm2 in bio-sensing was experimentally demonstrated on silicon-on-insulator devices.

  1. Silicon nano-membrane based photonic crystal microcavities for high sensitivity bio-sensing

    PubMed Central

    Lai, Wei-Cheng; Chakravarty, Swapnajit; Zou, Yi; Chen, Ray T.

    2012-01-01

    We experimentally demonstrated photonic crystal microcavity based resonant sensors coupled to photonic crystal waveguides in silicon nano-membrane on insulator for chemical and bio-sensing. Linear L-type microcavities are considered. In contrast to cavities with small mode volumes, but low quality factors for bio-sensing, we showed increasing the length of the microcavity enhances the quality factor of the resonance by an order of magnitude and increases the resonance wavelength shift while retaining compact device characteristics. Q~26760 and sensitivity down to 15 ng/ml and~110 pg/mm2 in bio-sensing was experimentally demonstrated on silicon-on-insulator devices. PMID:22466197

  2. Ultra-low power generation of twin photons in a compact silicon ring resonator.

    PubMed

    Azzini, Stefano; Grassani, Davide; Strain, Michael J; Sorel, Marc; Helt, L G; Sipe, J E; Liscidini, Marco; Galli, Matteo; Bajoni, Daniele

    2012-10-08

    We demonstrate efficient generation of correlated photon pairs by spontaneous four wave mixing in a 5 μm radius silicon ring resonator in the telecom band around 1550 nm. By optically pumping our device with a 200 μW continuous wave laser, we obtain a pair generation rate of 0.2 MHz and demonstrate photon time correlations with a coincidence-to-accidental ratio as high as 250. The results are in good agreement with theoretical predictions and show the potential of silicon micro-ring resonators as room temperature sources for integrated quantum optics applications.

  3. Non-degenerate two-photon absorption in silicon waveguides. Analytical and experimental study

    DOE PAGES

    Zhang, Yanbing; Husko, Chad; Lefrancois, Simon; ...

    2015-06-22

    We theoretically and experimentally investigate the nonlinear evolution of two optical pulses in a silicon waveguide. We provide an analytic solution for the weak probe wave undergoing non-degenerate two-photon absorption (TPA) from the strong pump. At larger pump intensities, we employ a numerical solution to study the interplay between TPA and photo-generated free carriers. We develop a simple and powerful approach to extract and separate out the distinct loss contributions of TPA and free-carrier absorption from readily available experimental data. Our analysis accounts accurately for experimental results in silicon photonic crystal waveguides.

  4. Design of wide-field submillimeter-wave camera using SIS photon detectors

    NASA Astrophysics Data System (ADS)

    Matsuo, Hiroshi; Ariyoshi, Seiichiro; Otani, Chiko; Ezawa, Hajime; Kobayashi, Jun; Mori, Yuko; Nagata, Hirohisa; Shimizu, Hirohiko M.; Fujiwara, Mikio; Akiba, Makoto; Hosako, Iwao

    2004-10-01

    SIS photon detectors are niobium-based superconducting direct detectors for submillimeter-wave that show superior performance when compared with bolometric detectors for ground-based observations. We present the design and development of the SIS photon detectors together with optical and cryogenic components for wide field continuum observation system on Atacama Submillimeter Telescope Experiment (ASTE). Using antenna coupled distributed junctions, SIS photon detectors give wide band response in a 650-GHz atmospheric window as well as high current sensitivity, shot noise limited operation, fast response and high dynamic range. Optical noise equivalent power (NEP) was measured to be 1.6x10-16 W/Hz0.5 that is less than the background photon fluctuation limit for ground based submillimeter-wave observations. Fabrication of focal plane array with 9 detector pixels is underway to install in ASTE. Readout electronics with Si-JFETs operating at about 100 K will be used for this array. Development of readout electronics for larger array is based on GaAs-JFETs operating at 0.3 K. For the purpose of installing 100 element array of SIS photon detectors, we have developed remotely operable low-vibration cryostat, which now cools bolometers for 350, 450, 850-µm observations down to 0.34 K. GM-type 4-K cooler and He3/He4 sorption cooler is used, which can be remotely recycled to keep detectors at 0.34 K. Since we have large optical window for this cryostat, sapphire cryogenic window is used to block infrared radiation. The sapphire window is ante-reflection coated with SiO2 by chemical vapor deposition (CVD). The transmittance of the cryogenic window at 650 GHz is more than 95%.

  5. On-chip optical diode based on silicon photonic crystal heterojunctions.

    PubMed

    Wang, Chen; Zhou, Chang-Zhu; Li, Zhi-Yuan

    2011-12-19

    Optical isolation is a long pursued object with fundamental difficulty in integrated photonics. As a step towards this goal, we demonstrate the design, fabrication, and characterization of on-chip wavelength-scale optical diodes that are made from the heterojunction between two different silicon two-dimensional square-lattice photonic crystal slabs with directional bandgap mismatch and different mode transitions. The measured transmission spectra show considerable unidirectional transmission behavior, in good agreement with numerical simulations. The experimental realization of on-chip optical diodes with wavelength-scale size using all-dielectric, passive, and linear silicon photonic crystal structures may help to construct on-chip optical logical devices without nonlinearity or magnetism, and would open up a road towards photonic computers.

  6. SU-E-J-91: Novel Epitaxial Silicon Array for Quality Assurance in Photon and Proton Therapy

    SciTech Connect

    Talamonti, C; Zani, M; Scaringella, M; Bruzzi, M; Bucciolini, M; Menichelli, D; Friedl, F

    2014-06-01

    Purpose: to demonstrate suitability of a novel silicon array for measuring the dose properties of highly conformal photon and proton beams. Methods: prototype under test is a 24cm long linear array prototype, although the underlying technology is suitable to construct 2D arrays as well. It is based on a 64pixels monolithic sensor with 1mm pixel pitch, made of epitaxial ptype silicon. Thanks to design modularity, more sensors can be placed side by side without breaking pixel pitch. Flattened and unflattened photon beams, as well as proton radiation from a cyclotron in pencil beam scanning mode, were considered. Measurements of beam characteristics as percentage depth doses, dose profiles, output factors and energy response, which are necessary to deliver radiation with high precision and reliability, were performed. Results: Dose rate independence with photons was verified in the dose per pulse range 0.03 to 2mGy. Results clearly indicate nondependence of the detector sensitivity both for flattened and unflattened beams, with a variation of at most 0.5percentage. OFs were obtained for field with a lateral size ranging from 0.8cm to 16cm and the results are in good agreement with ion chamber A1SL, max difference less than 1.5percentage. Field sizes and beam penumbra were measured and compared to EBT film results. Concerning proton beams, sensitivity independence on dose rate was verified by changing the beam current in the interval 2-130Gy/s. Field sizes and beam penumbra measurements are in agreement with data taken with a scintillating 2D array with 0.5mm resolution IBA Lynx, and a better penumbra definition than an array of ionization chambers IBA MatriXX is reached. Conclusion: The device is a novel and valuable tool for QA both for photon and proton dose delivery. All measurements demonstrated its capability to measure with high spatial resolution many crucial properties of the RT beam.

  7. Monolithic silicon photonics in a sub-100nm SOI CMOS microprocessor foundry: progress from devices to systems

    NASA Astrophysics Data System (ADS)

    Popović, Miloš A.; Wade, Mark T.; Orcutt, Jason S.; Shainline, Jeffrey M.; Sun, Chen; Georgas, Michael; Moss, Benjamin; Kumar, Rajesh; Alloatti, Luca; Pavanello, Fabio; Chen, Yu-Hsin; Nammari, Kareem; Notaros, Jelena; Atabaki, Amir; Leu, Jonathan; Stojanović, Vladimir; Ram, Rajeev J.

    2015-02-01

    We review recent progress of an effort led by the Stojanović (UC Berkeley), Ram (MIT) and Popović (CU Boulder) research groups to enable the design of photonic devices, and complete on-chip electro-optic systems and interfaces, directly in standard microelectronics CMOS processes in a microprocessor foundry, with no in-foundry process modifications. This approach allows tight and large-scale monolithic integration of silicon photonics with state-of-the-art (sub-100nm-node) microelectronics, here a 45nm SOI CMOS process. It enables natural scale-up to manufacturing, and rapid advances in device design due to process repeatability. The initial driver application was addressing the processor-to-memory communication energy bottleneck. Device results include 5Gbps modulators based on an interleaved junction that take advantage of the high resolution of the sub-100nm CMOS process. We demonstrate operation at 5fJ/bit with 1.5dB insertion loss and 8dB extinction ratio. We also demonstrate the first infrared detectors in a zero-change CMOS process, using absorption in transistor source/drain SiGe stressors. Subsystems described include the first monolithically integrated electronic-photonic transmitter on chip (modulator+driver) with 20-70fJ/bit wall plug energy/bit (2-3.5Gbps), to our knowledge the lowest transmitter energy demonstrated to date. We also demonstrate native-process infrared receivers at 220fJ/bit (5Gbps). These are encouraging signs for the prospects of monolithic electronics-photonics integration. Beyond processor-to-memory interconnects, our approach to photonics as a "More-than- Moore" technology inside advanced CMOS promises to enable VLSI electronic-photonic chip platforms tailored to a vast array of emerging applications, from optical and acoustic sensing, high-speed signal processing, RF and optical metrology and clocks, through to analog computation and quantum technology.

  8. Two-photon excitation of porphyrin-functionalized porous silicon nanoparticles for photodynamic therapy.

    PubMed

    Secret, Emilie; Maynadier, Marie; Gallud, Audrey; Chaix, Arnaud; Bouffard, Elise; Gary-Bobo, Magali; Marcotte, Nathalie; Mongin, Olivier; El Cheikh, Khaled; Hugues, Vincent; Auffan, Mélanie; Frochot, Céline; Morère, Alain; Maillard, Philippe; Blanchard-Desce, Mireille; Sailor, Michael J; Garcia, Marcel; Durand, Jean-Olivier; Cunin, Frédérique

    2014-12-03

    Porous silicon nanoparticles (pSiNPs) act as a sensitizer for the 2-photon excitation of a pendant porphyrin using NIR laser light, for imaging and photodynamic therapy. Mannose-functionalized pSiNPs can be vectorized to MCF-7 human breast cancer cells through a mannose receptor-mediated endocytosis mechanism to provide a 3-fold enhancement of the 2-photon PDT effect.

  9. Correlated photon pair generation in low-loss double-stripe silicon nitride waveguides

    NASA Astrophysics Data System (ADS)

    Zhang, Xiang; Zhang, Yanbing; Xiong, Chunle; Eggleton, Benjamin J.

    2016-07-01

    We demonstrate correlated photon pair generation via spontaneous four-wave mixing in a low-loss double-stripe silicon nitride waveguide with a coincidence-to-accidental ratio over 10. The coincidence-to-accidental ratio is limited by spontaneous Raman scattering, which can be mitigated by cooling in the future. This demonstration suggests that this waveguide structure is a potential platform to develop integrated quantum photonic chips for quantum information processing.

  10. Development of silicon detectors for Beam Loss Monitoring at HL-LHC

    NASA Astrophysics Data System (ADS)

    Verbitskaya, E.; Eremin, V.; Zabrodskii, A.; Bogdanov, A.; Shepelev, A.; Dehning, B.; Bartosik, M. R.; Alexopoulos, A.; Glaser, M.; Ravotti, F.; Sapinski, M.; Härkönen, J.; Egorov, N.; Galkin, A.

    2017-03-01

    Silicon detectors were proposed as novel Beam Loss Monitors (BLM) for the control of the radiation environment in the vicinity of the superconductive magnets of the High-Luminosity Large Hadron Collider. The present work is aimed at enhancing the BLM sensitivity and therefore the capability of triggering the beam abort system before a critical radiation load hits the superconductive coils. We report here the results of three in situ irradiation tests of Si detectors carried out at the CERN PS at 1.9–4.2 K. The main experimental result is that all silicon detectors survived irradiation up to 1.22× 1016 p/cm2. The third test, focused on the detailed characterization of the detectors with standard (300 μm) and reduced (100 μm) thicknesses, showed only a marginal difference in the sensitivity of thinned detectors in the entire fluence range and a smaller rate of signal degradation that promotes their use as BLMs. The irradiation campaigns produced new information on radiation damage and carrier transport in Si detectors irradiated at the temperatures of 1.9–4.2 K. The results were encouraging and permitted to initiate the production of the first BLM prototype modules which were installed at the end of the vessel containing the superconductive coil of a LHC magnet immersed in superfluid helium to be able to test the silicon detectors in real operational conditions.

  11. A universal setup for active control of a single-photon detector.

    PubMed

    Liu, Qin; Lamas-Linares, Antía; Kurtsiefer, Christian; Skaar, Johannes; Makarov, Vadim; Gerhardt, Ilja

    2014-01-01

    The influence of bright light on a single-photon detector has been described in a number of recent publications. The impact on quantum key distribution (QKD) is important, and several hacking experiments have been tailored to fully control single-photon detectors. Special attention has been given to avoid introducing further errors into a QKD system. We describe the design and technical details of an apparatus which allows to attack a quantum-cryptographic connection. This device is capable of controlling free-space and fiber-based systems and of minimizing unwanted clicks in the system. With different control diagrams, we are able to achieve a different level of control. The control was initially targeted to the systems using BB84 protocol, with polarization encoding and basis switching using beamsplitters, but could be extended to other types of systems. We further outline how to characterize the quality of active control of single-photon detectors.

  12. Development of Data Acquisition Methods for an FPGA-Based Photon Counting Detector

    NASA Astrophysics Data System (ADS)

    Ambily, S.; Sarpotdar, Mayuresh; Mathew, Joice; Sreejith, A. G.; Nirmal, K.; Prakash, Ajin; Safonova, Margarita; Murthy, Jayant

    MCP-based detectors are widely used in the ultraviolet (UV) region due to their low noise levels, high sensitivity and good spatial and temporal resolution. We have developed a compact near-UV (NUV) detector for high-altitude balloon and space flights, using off-the-shelf MCP, CMOS sensor, and optics. The detector is designed to be capable of working in the direct frame transfer mode as well in the photon counting mode for single photon event detection. The identification and centroiding of each photon event are done using an FPGA-based data acquisition and real-time processing system. In this paper, we discuss various algorithms and methods used in both operating modes, as well as their implementation on the hardware.

  13. Response of BGO detectors to photons of 3-50 MeV energy

    NASA Astrophysics Data System (ADS)

    Matulewicz, T.; Henning, W.; Emling, H.; Freifelder, R.; Grein, H.; Grosse, E.; Herrmann, N.; Holzmann, R.; Kulessa, R.; Simon, R. S.; Wollersheim, H. J.; Schoch, B.; Vogt, J.; Wilhelm, M.; Kratz, J. V.; Schmidt, R.; Janssens, R. V. F.

    1993-02-01

    The response of an array of 7 hexagonal BGO detectors each 7.5 cm long (6.7 radiation lengths) with 3.6 cm side-to-side distance was measured using monochromatic photons from the tagged-photon facility at the electron accelerator MAMI A at Mainz. The experimental spectra of the deposited energy for a single detector and for the array of seven modules compare very well with the predictions of Monte Carlo shower simulations using the code GEANT3. Significant improvement of the energy resolution is observed for the summed energy spectra compared to the resolution of a single module. This improvement deteriorates at higher photon energies because the length of the detector is not sufficient to absorb the forward component of the electromagnetic shower.

  14. A universal setup for active control of a single-photon detector

    SciTech Connect

    Liu, Qin; Skaar, Johannes; Lamas-Linares, Antía; Kurtsiefer, Christian; Makarov, Vadim; Gerhardt, Ilja

    2014-01-15

    The influence of bright light on a single-photon detector has been described in a number of recent publications. The impact on quantum key distribution (QKD) is important, and several hacking experiments have been tailored to fully control single-photon detectors. Special attention has been given to avoid introducing further errors into a QKD system. We describe the design and technical details of an apparatus which allows to attack a quantum-cryptographic connection. This device is capable of controlling free-space and fiber-based systems and of minimizing unwanted clicks in the system. With different control diagrams, we are able to achieve a different level of control. The control was initially targeted to the systems using BB84 protocol, with polarization encoding and basis switching using beamsplitters, but could be extended to other types of systems. We further outline how to characterize the quality of active control of single-photon detectors.

  15. A universal setup for active control of a single-photon detector

    NASA Astrophysics Data System (ADS)

    Liu, Qin; Lamas-Linares, Antía; Kurtsiefer, Christian; Skaar, Johannes; Makarov, Vadim; Gerhardt, Ilja

    2014-01-01

    The influence of bright light on a single-photon detector has been described in a number of recent publications. The impact on quantum key distribution (QKD) is important, and several hacking experiments have been tailored to fully control single-photon detectors. Special attention has been given to avoid introducing further errors into a QKD system. We describe the design and technical details of an apparatus which allows to attack a quantum-cryptographic connection. This device is capable of controlling free-space and fiber-based systems and of minimizing unwanted clicks in the system. With different control diagrams, we are able to achieve a different level of control. The control was initially targeted to the systems using BB84 protocol, with polarization encoding and basis switching using beamsplitters, but could be extended to other types of systems. We further outline how to characterize the quality of active control of single-photon detectors.

  16. EIGER: Next generation single photon counting detector for X-ray applications

    NASA Astrophysics Data System (ADS)

    Dinapoli, Roberto; Bergamaschi, Anna; Henrich, Beat; Horisberger, Roland; Johnson, Ian; Mozzanica, Aldo; Schmid, Elmar; Schmitt, Bernd; Schreiber, Akos; Shi, Xintian; Theidel, Gerd

    2011-09-01

    EIGER is an advanced family of single photon counting hybrid pixel detectors, primarily aimed at diffraction experiments at synchrotrons. Optimization of maximal functionality and minimal pixel size (using a 0.25 μm process and conserving the radiation tolerant design) has resulted in 75×75 μm2 pixels. Every pixel comprises a preamplifier, shaper, discriminator (with a 6 bit DAC for threshold trimming), a configurable 4/8/12 bit counter with double buffering, as well as readout, control and test circuitry. A novel feature of this chip is its double buffered counter, meaning a next frame can be acquired while the previous one is being readout. An array of 256×256 pixels fits on a ˜2×2 cm2 chip and a sensor of ˜8×4 cm2 will be equipped with eight readout chips to form a module containing 0.5 Mpixel. Several modules can then be tiled to form larger area detectors. Detectors up to 4×8 modules (16 Mpixel) are planned. To achieve frame rates of up to 24 kHz the readout architecture is highly parallel, and the chip readout happens in parallel on 32 readout lines with a 100 MHz Double Data Rate clock. Several chips and singles (i.e. a single chip bump-bonded to a single chip silicon sensor) were tested both with a lab X-ray source and at Swiss Light Source (SLS) beamlines. These tests demonstrate the full functionality of the chip and provide a first assessment of its performance. High resolution X-ray images and "high speed movies" were produced, even without threshold trimming, at the target system frame rates (up to ˜24 kHz in 4 bit mode). In parallel, dedicated hardware, firmware and software had to be developed to comply with the enormous data rate the chip is capable of delivering. Details of the chip design and tests will be given, as well as highlights of both test and final readout systems.

  17. Cryogenic detectors based on superconducting transition-edge sensors for time-energy-resolved single-photon counters and for dark matter searches

    NASA Astrophysics Data System (ADS)

    Cabrera, B.; Clarke, R.; Miller, A.; Nam, S. W.; Romani, R.; Saab, T.; Young, B.

    2000-05-01

    We present the recent progress using transition-edge sensors (TES) for cryogenic particle detectors. First, by directly absorbing photons in tungsten TES devices, an instrument has been made which time stamps (0.1μs) and energy resolves (0.15 eV FWHM) each photon at rates up to 10 kHz. Observations of the Crab pulsar are the first broad spectrum infrared through full optical and time resolved on any astronomical object. Second, in the CDMS (cryogenic dark matter search) experiment looking for WIMPs, large crystals of silicon and germanium are instrumented with QET (quasiparticle-trap-assisted electrothermal-feedback transition-edge sensors) phonon sensors which provide the recoil energy and location in /x,y and /z for each event. Together with an ionization readout, these detectors provide powerful discrimination capabilities against known backgrounds and they are now probing new regions for WIMP dark matter.

  18. WE-AB-BRB-04: A Novel Monolithic Silicon 2D Detector Array for Use in Stereotactic Applications

    SciTech Connect

    Gargett, M; Petasecca, M; Alnaghy, S; Rosenfeld, A; Oborn, B; Metcalfe, P

    2015-06-15

    Purpose: To assess the capability of a novel 2D monolithic silicon detector array in measuring stereotactic photon fields. Methods: The silicon array detector used in this work, named Magic Plate-512 (MP512), is a thin monolithic silicon wafer (52 × 52 × 0.47 mm{sup 3}) with 512 ion-implanted diodes (0.5 × 0.5 mm{sup 2}). Adjacent pixels are spaced evenly with 2 mm pitch, covering a maximum detection area 46 mm wide. Its fast, FPGA based read-out system is synchronised with the linac to allow readout of all pixels pulse-by-pulse. A clinical SABR lung plan (consisting of 9 single segment beams, 6MV) was measured with the array at 1.5 cm depth in a solid water phantom (100 cm SSD). The typical field size was in the range of 3 × 3 cm{sup 2} to 4 × 4 cm{sup 2}. Each beam was delivered at perpendicular incidence to the detector plane so as to avoid the need for angular dependence corrections. The fields were measured under the same conditions using Gafchromic EBT3 film for comparison. The film was scanned at 72 dpi resolution, with the red channel data used for analysis. Results: Average gamma passing rates of (92.3 ± 1.8) % for 2%/2mm criteria, and (86.6 ± 2.3) % for 1%/2mm criteria were achieved for MP512, using EBT3 film as the reference distribution. The detector array was able to accurately measure the full-width-at-half-maximum (FWHM), to within (0.77 ± 0.01) mm accuracy when compared to film. The penumbral widths (80%-20%) were measured to within (0.30 ± 0.01) mm accuracy to film. Conclusion: The MP512 is a feasible option for measurement of stereotactic photon fields, with its high density of detection points making it useful for small field applications. The prototype array has demonstrated merit; in the future the development of a larger array detection area would be beneficial for clinical applications.

  19. Study of silicon strip waveguides with diffraction gratings and photonic crystals tuned to a wavelength of 1.5 µm

    SciTech Connect

    Barabanenkov, M. Yu. Vyatkin, A. F.; Volkov, V. T.; Gruzintsev, A. N.; Il’in, A. I.; Trofimov, O. V.

    2015-12-15

    Single-mode submicrometer-thick strip waveguides on silicon-on-insulator substrates, fabricated by silicon-planar-technology methods are considered. To solve the problem of 1.5-µm wavelength radiation input-output and its frequency filtering, strip diffraction gratings and two-dimensional photonic crystals are integrated into waveguides. The reflection and transmission spectra of gratings and photonic crystals are calculated. The waveguide-mode-attenuation coefficient for a polycrystalline silicon waveguide is experimentally estimated.

  20. Absolute calibration of photon-number-resolving detectors with an analog output using twin beams

    SciTech Connect

    Peřina, Jan; Haderka, Ondřej; Allevi, Alessia; Bondani, Maria

    2014-01-27

    A method for absolute calibration of a photon-number resolving detector producing analog signals as the output is developed using a twin beam. The method gives both analog-to-digital conversion parameters and quantum detection efficiency for the photon fields. Characteristics of the used twin beam are also obtained. A simplified variant of the method applicable to fields with high signal to noise ratios and suitable for more intense twin beams is suggested.

  1. Detecting small debris using a ground-based photon counting detector

    SciTech Connect

    Ho, C.; Priedhorsky, W.C.; Baron, M.H.

    1993-05-01

    We describe a sensitive technique for detecting small space debris that exploits a fast photon-counting imager. Microchannel plate detectors using crossed delay-line readout can achieve a resolution of 2048 {times} 2048 spatial pixels and a maximum count rate of about 10{sup 6} photons per second. A baseline debris-tracking system might couple this detector to a 16-cm aperture telescope. The detector yields x, y, and time information for each detected photon. When visualized in (x, y, t) space, photons from a fast-moving orbital object appear on a straight line. They can be distinguished from diffuse background photons, randomly scattered in the space, and star photons, which fall on a line with sidereal velocity. By searching for this unique signature, we can detect and track small debris objects. At dawn and dusk, a spherical object of 1.3 cm diameter at 400 km will reflect sunlight for an apparent magnitude of V {approx} 16. The baseline system would detect about 16 photons from this object as it crosses a 1 degree field of view in about 1 second. The Ene in (x, y, t) space will be significant in a diffuse background of {approximately} 10{sup 6} photons. We discuss the data processing scheme and line detection algorithm. The advantages of this technique are that one can (1) detect cm-size debris objects with a small telescope, and (2) detect debris moving with any direction and velocity. In this paper, we describe the progress in the development of detector and data acquisition system, the preparation for a field test for such a system, and the development and optimization of the data analysis algorithm. Detection sensitivity would currently be constrained by the capability of the data acquisition and the data processing systems, but further improvements could alleviate these bottlenecks.

  2. Detecting small debris using a ground-based photon counting detector

    SciTech Connect

    Ho, C.; Priedhorsky, W.C.; Baron, M.H.

    1993-01-01

    We describe a sensitive technique for detecting small space debris that exploits a fast photon-counting imager. Microchannel plate detectors using crossed delay-line readout can achieve a resolution of 2048 [times] 2048 spatial pixels and a maximum count rate of about 10[sup 6] photons per second. A baseline debris-tracking system might couple this detector to a 16-cm aperture telescope. The detector yields x, y, and time information for each detected photon. When visualized in (x, y, t) space, photons from a fast-moving orbital object appear on a straight line. They can be distinguished from diffuse background photons, randomly scattered in the space, and star photons, which fall on a line with sidereal velocity. By searching for this unique signature, we can detect and track small debris objects. At dawn and dusk, a spherical object of 1.3 cm diameter at 400 km will reflect sunlight for an apparent magnitude of V [approx] 16. The baseline system would detect about 16 photons from this object as it crosses a 1 degree field of view in about 1 second. The Ene in (x, y, t) space will be significant in a diffuse background of [approximately] 10[sup 6] photons. We discuss the data processing scheme and line detection algorithm. The advantages of this technique are that one can (1) detect cm-size debris objects with a small telescope, and (2) detect debris moving with any direction and velocity. In this paper, we describe the progress in the development of detector and data acquisition system, the preparation for a field test for such a system, and the development and optimization of the data analysis algorithm. Detection sensitivity would currently be constrained by the capability of the data acquisition and the data processing systems, but further improvements could alleviate these bottlenecks.

  3. Calibration of Cherenkov detectors for monoenergetic photon imaging in active interrogation applications

    NASA Astrophysics Data System (ADS)

    Rose, P. B.; Erickson, A. S.

    2015-11-01

    Active interrogation of cargo containers using monoenergetic photons offers a rapid and low-dose approach to search for shielded special nuclear materials. Cherenkov detectors can be used for imaging of the cargo provided that gamma ray energies used in interrogation are well resolved, as the case in 11B(d,n-γ)12C reaction resulting in 4.4 MeV and 15.1 MeV photons. While an array of Cherenkov threshold detectors reduces low energy background from scatter while providing the ability of high contrast transmission imaging, thus confirming the presence of high-Z materials, these detectors require a special approach to energy calibration due to the lack of resolution. In this paper, we discuss the utility of Cherenkov detectors for active interrogation with monoenergetic photons as well as the results of computational and experimental studies of their energy calibration. The results of the studies with sources emitting monoenergetic photons as well as complex gamma ray spectrum sources, for example 232Th, show that calibration is possible as long as the energies of photons of interest are distinct.

  4. Application of neural networks to digital pulse shape analysis for an array of silicon strip detectors

    NASA Astrophysics Data System (ADS)

    Flores, J. L.; Martel, I.; Jiménez, R.; Galán, J.; Salmerón, P.

    2016-09-01

    The new generation of nuclear physics detectors that used to study nuclear reactions is considering the use of digital pulse shape analysis techniques (DPSA) to obtain the (A,Z) values of the reaction products impinging in solid state detectors. This technique can be an important tool for selecting the relevant reaction channels at the HYDE (HYbrid DEtector ball array) silicon array foreseen for the Low Energy Branch of the FAIR facility (Darmstadt, Germany). In this work we study the feasibility of using artificial neural networks (ANNs) for particle identification with silicon detectors. Multilayer Perceptron networks were trained and tested with recent experimental data, showing excellent identification capabilities with signals of several isotopes ranging from 12C up to 84Kr, yielding higher discrimination rates than any other previously reported.

  5. MicroCT with energy-resolved photon-counting detectors

    PubMed Central

    Wang, X; Meier, D; Mikkelsen, S; Maehlum, G E; Wagenaar, D J; Tsui, BMW; Patt, B E; Frey, E C

    2011-01-01

    The goal of this paper was to investigate the benefits that could be realistically achieved on a microCT imaging system with an energy-resolved photon-counting x-ray detector. To this end, we built and evaluated a prototype microCT system based on such a detector. The detector is based on cadmium telluride (CdTe) radiation sensors and application-specific integrated circuit (ASIC) readouts. Each detector pixel can simultaneously count x-ray photons above six energy thresholds, providing the capability for energy-selective x-ray imaging. We tested the spectroscopic performance of the system using polychromatic x-ray radiation and various filtering materials with Kabsorption edges. Tomographic images were then acquired of a cylindrical PMMA phantom containing holes filled with various materials. Results were also compared with those acquired using an intensity-integrating x-ray detector and single-energy (i.e. non-energy-selective) CT. This paper describes the functionality and performance of the system, and presents preliminary spectroscopic and tomographic results. The spectroscopic experiments showed that the energy-resolved photon-counting detector was capable of measuring energy spectra from polychromatic sources like a standard x-ray tube, and resolving absorption edges present in the energy range used for imaging. However, the spectral quality was degraded by spectral distortions resulting from degrading factors, including finite energy resolution and charge sharing. We developed a simple charge-sharing model to reproduce these distortions. The tomographic experiments showed that the availability of multiple energy thresholds in the photon-counting detector allowed us to simultaneously measure target-to-background contrasts in different energy ranges. Compared with single-energy CT with an integrating detector, this feature was especially useful to improve differentiation of materials with different attenuation coefficient energy dependences. PMID:21464527

  6. Improved Performance of Silicon Carbide Detector Using Double Layer Anti Reflection (AR) Coating

    DTIC Science & Technology

    2013-08-01

    chemical vapor deposition (PECVD) technique at 250 °C. Using a double-layer AR coating with a bottom silicon nitride ( Si3N4 ) layer and a top silicon...simulation curve for different combination of Si3N4 and SiO2 films. ........4 Figure 4. Experimental quantum efficiency curves for different AR...layer AR coating (4) consisting of silicon nitride ( Si3N4 ) and SO2 layers. 2. Experimental The 4H-SiC wafer from which the photo detectors were

  7. Quantum efficiency of a double quantum dot microwave photon detector

    NASA Astrophysics Data System (ADS)

    Wong, Clement; Vavilov, Maxim

    Motivated by recent interest in implementing circuit quantum electrodynamics with semiconducting quantum dots, we study charge transfer through a double quantum dot (DQD) capacitively coupled to a superconducting cavity subject to a microwave field. We analyze the DQD current response using input-output theory and determine the optimal parameter regime for complete absorption of radiation and efficient conversion of microwave photons to electric current. For experimentally available DQD systems, we show that the cavity-coupled DQD operates as a photon-to-charge converter with quantum efficiencies up to 80% C.W. acknowledges support by the Intelligence Community Postdoctoral Research Fellowship Program.

  8. High resolution cross strip anodes for photon counting detectors

    NASA Astrophysics Data System (ADS)

    Siegmund, O. H. W.; Tremsin, A. S.; Vallerga, J. V.; Abiad, R.; Hull, J.

    2003-05-01

    A new photon counting, imaging readout for microchannel plate sensors, the cross strip (XS) anode, has been investigated. Charge centroiding of signals detected on two orthogonal layers of sense strip sets are used to derive photon locations. The XS anode spatial resolution (<3 μm FWHM) exceeds the spatial resolution of most direct charge sensing anodes, and does so at low gain (<2×10 6). The image linearity and fidelity are high enough to resolve and map 7 μm MCP pores, offering new possibilities for astronomical and other applications.

  9. Solar irradiance measurements by means of optical fibers and silicon detectors.

    PubMed

    Corrons, A; Pons, A

    1979-08-15

    An experimental system has been constructed for the continuous measurement of solar irradiance using silicon diode detectors not directly exposed to solar radiation. The received incident solar radiation is conducted from the roof of the building to the detectors by an optical fiber. An electronic computer receives the signal and processes it, introducing the necessary corrections to calculate the total solar irradiance in W m(-2). The system measures with a proved accuracy to better than 3%.

  10. A High-Speed, Event-Driven, Active Pixel Sensor Readout for Photon-Counting Microchannel Plate Detectors

    NASA Technical Reports Server (NTRS)

    Kimble, Randy A.; Pain, Bedabrata; Norton, Timothy J.; Haas, J. Patrick; Oegerle, William R. (Technical Monitor)

    2002-01-01

    Silicon array readouts for microchannel plate intensifiers offer several attractive features. In this class of detector, the electron cloud output of the MCP intensifier is converted to visible light by a phosphor; that light is then fiber-optically coupled to the silicon array. In photon-counting mode, the resulting light splashes on the silicon array are recognized and centroided to fractional pixel accuracy by off-chip electronics. This process can result in very high (MCP-limited) spatial resolution while operating at a modest MCP gain (desirable for dynamic range and long term stability). The principal limitation of intensified CCD systems of this type is their severely limited local dynamic range, as accurate photon counting is achieved only if there are not overlapping event splashes within the frame time of the device. This problem can be ameliorated somewhat by processing events only in pre-selected windows of interest of by using an addressable charge injection device (CID) for the readout array. We are currently pursuing the development of an intriguing alternative readout concept based on using an event-driven CMOS Active Pixel Sensor. APS technology permits the incorporation of discriminator circuitry within each pixel. When coupled with suitable CMOS logic outside the array area, the discriminator circuitry can be used to trigger the readout of small sub-array windows only when and where an event splash has been detected, completely eliminating the local dynamic range problem, while achieving a high global count rate capability and maintaining high spatial resolution. We elaborate on this concept and present our progress toward implementing an event-driven APS readout.

  11. A High-Speed, Event-Driven, Active Pixel Sensor Readout for Photon-Counting Microchannel Plate Detectors

    NASA Technical Reports Server (NTRS)

    Kimble, Randy A.; Pain, B.; Norton, T. J.; Haas, P.; Fisher, Richard R. (Technical Monitor)

    2001-01-01

    Silicon array readouts for microchannel plate intensifiers offer several attractive features. In this class of detector, the electron cloud output of the MCP intensifier is converted to visible light by a phosphor; that light is then fiber-optically coupled to the silicon array. In photon-counting mode, the resulting light splashes on the silicon array are recognized and centroided to fractional pixel accuracy by off-chip electronics. This process can result in very high (MCP-limited) spatial resolution for the readout while operating at a modest MCP gain (desirable for dynamic range and long term stability). The principal limitation of intensified CCD systems of this type is their severely limited local dynamic range, as accurate photon counting is achieved only if there are not overlapping event splashes within the frame time of the device. This problem can be ameliorated somewhat by processing events only in pre-selected windows of interest or by using an addressable charge injection device (CID) for the readout array. We are currently pursuing the development of an intriguing alternative readout concept based on using an event-driven CMOS Active Pixel Sensor. APS technology permits the incorporation of discriminator circuitry within each pixel. When coupled with suitable CMOS logic outside the array area, the discriminator circuitry can be used to trigger the readout of small sub-array windows only when and where an event splash has been detected, completely eliminating the local dynamic range problem, while achieving a high global count rate capability and maintaining high spatial resolution. We elaborate on this concept and present our progress toward implementing an event-driven APS readout.

  12. The effects of photon flux on energy spectra and imaging characteristics in a photon-counting x-ray detector.

    PubMed

    Cho, H-M; Kim, H-J; Choi, Y-N; Lee, S-W; Ryu, H-J; Lee, Y-J

    2013-07-21

    The purpose of this paper was to investigate the effect of photon flux on the recorded energy spectrum and images produced with a photon-counting detector. We used a photon-counting cadmium telluride (CdTe) x-ray detector (model PID350, Oy Ajat, Finland). The CdTe array was composed of 16 384 pixels, each 0.35 × 0.35 × 0.75 mm(3) in dimension. The photon flux is controlled by an additional aluminum filter (1, 10, 20, 30 and 40 mm). Images were acquired at three different tube voltages (50, 70 and 90 kVp) with various thicknesses of photon flux control (PFC) filters. The data acquisition time was changed to acquire an approximately equal number of counts within the selected energy window between different thicknesses of PFC filters at the same tube voltage. A phantom was manufactured to evaluate the photon flux effect on the image. The phantom was made from polymethyl methacrylate and four concentrations of iodine. The photon flux effect on the image was evaluated by the signal-difference-to-noise ratio (SDNR) between iodine and the background material. The changes of photon flux affected the recorded energy spectra and image. The thickness of the PFC filter that showed the maximum SDNR differed according to the tube voltage. The 10 mm PFC filter showed the highest SDNR at 50 and 70 kVp, while the 30 mm PFC filter exhibited the highest SDNR at 90 kVp. The SDNR was improved up to, on average, 30-fold in optimal photon flux conditions which acquired a spectrum including the lowest electronic noise with no pulse pile-up effect. The results of this study showed that the photon flux affected not only the acquired energy spectrum but also the image. Based on these results, the spectral distortion correction should be considered in connection with the image that is the ultimate purpose of medical imaging.

  13. The effects of photon flux on energy spectra and imaging characteristics in a photon-counting x-ray detector

    NASA Astrophysics Data System (ADS)

    Cho, H.-M.; Kim, H.-J.; Choi, Y.-N.; Lee, S.-W.; Ryu, H.-J.; Lee, Y.-J.

    2013-07-01

    The purpose of this paper was to investigate the effect of photon flux on the recorded energy spectrum and images produced with a photon-counting detector. We used a photon-counting cadmium telluride (CdTe) x-ray detector (model PID350, Oy Ajat, Finland). The CdTe array was composed of 16 384 pixels, each 0.35 × 0.35 × 0.75 mm3 in dimension. The photon flux is controlled by an additional aluminum filter (1, 10, 20, 30 and 40 mm). Images were acquired at three different tube voltages (50, 70 and 90 kVp) with various thicknesses of photon flux control (PFC) filters. The data acquisition time was changed to acquire an approximately equal number of counts within the selected energy window between different thicknesses of PFC filters at the same tube voltage. A phantom was manufactured to evaluate the photon flux effect on the image. The phantom was made from polymethyl methacrylate and four concentrations of iodine. The photon flux effect on the image was evaluated by the signal-difference-to-noise ratio (SDNR) between iodine and the background material. The changes of photon flux affected the recorded energy spectra and image. The thickness of the PFC filter that showed the maximum SDNR differed according to the tube voltage. The 10 mm PFC filter showed the highest SDNR at 50 and 70 kVp, while the 30 mm PFC filter exhibited the highest SDNR at 90 kVp. The SDNR was improved up to, on average, 30-fold in optimal photon flux conditions which acquired a spectrum including the lowest electronic noise with no pulse pile-up effect. The results of this study showed that the photon flux affected not only the acquired energy spectrum but also the image. Based on these results, the spectral distortion correction should be considered in connection with the image that is the ultimate purpose of medical imaging.

  14. Magneto-optical non-reciprocal devices in silicon photonics.

    PubMed

    Shoji, Yuya; Mizumoto, Tetsuya

    2014-02-01

    Silicon waveguide optical non-reciprocal devices based on the magneto-optical effect are reviewed. The non-reciprocal phase shift caused by the first-order magneto-optical effect is effective in realizing optical non-reciprocal devices in silicon waveguide platforms. In a silicon-on-insulator waveguide, the low refractive index of the buried oxide layer enhances the magneto-optical phase shift, which reduces the device footprints. A surface activated direct bonding technique was developed to integrate a magneto-optical garnet crystal on the silicon waveguides. A silicon waveguide optical isolator based on the magneto-optical phase shift was demonstrated with an optical isolation of 30 dB and insertion loss of 13 dB at a wavelength of 1548 nm. Furthermore, a four port optical circulator was demonstrated with maximum isolations of 15.3 and 9.3 dB in cross and bar ports, respectively, at a wavelength of 1531 nm.

  15. Magneto-optical non-reciprocal devices in silicon photonics

    PubMed Central

    Shoji, Yuya; Mizumoto, Tetsuya

    2014-01-01

    Silicon waveguide optical non-reciprocal devices based on the magneto-optical effect are reviewed. The non-reciprocal phase shift caused by the first-order magneto-optical effect is effective in realizing optical non-reciprocal devices in silicon waveguide platforms. In a silicon-on-insulator waveguide, the low refractive index of the buried oxide layer enhances the magneto-optical phase shift, which reduces the device footprints. A surface activated direct bonding technique was developed to integrate a magneto-optical garnet crystal on the silicon waveguides. A silicon waveguide optical isolator based on the magneto-optical phase shift was demonstrated with an optical isolation of 30 dB and insertion loss of 13 dB at a wavelength of 1548 nm. Furthermore, a four port optical circulator was demonstrated with maximum isolations of 15.3 and 9.3 dB in cross and bar ports, respectively, at a wavelength of 1531 nm. PMID:27877640

  16. In-depth study of single photon time resolution for the Philips digital silicon photomultiplier

    NASA Astrophysics Data System (ADS)

    Liu, Z.; Gundacker, S.; Pizzichemi, M.; Ghezzi, A.; Auffray, E.; Lecoq, P.; Paganoni, M.

    2016-06-01

    The digital silicon photomultiplier (SiPM) has been commercialised by Philips as an innovative technology compared to analog silicon photomultiplier devices. The Philips digital SiPM, has a pair of time to digital converters (TDCs) connected to 12800 single photon avalanche diodes (SPADs). Detailed measurements were performed to understand the low photon time response of the Philips digital SiPM. The single photon time resolution (SPTR) of every single SPAD in a pixel consisting of 3200 SPADs was measured and an average value of 85 ps full width at half maximum (FWHM) was observed. Each SPAD sends the signal to the TDC with different signal propagation time, resulting in a so called trigger network skew. This distribution of the trigger network skew for a pixel (3200 SPADs) has been measured and a variation of 50 ps FWHM was extracted. The SPTR of the whole pixel is the combination of SPAD jitter, trigger network skew, and the SPAD non-uniformity. The SPTR of a complete pixel was 103 ps FWHM at 3.3 V above breakdown voltage. Further, the effect of the crosstalk at a low photon level has been studied, with the two photon time resolution degrading if the events are a combination of detected (true) photons and crosstalk events. Finally, the time response to multiple photons was investigated.

  17. Experimental demonstration of analog signal transmission in a silicon photonic crystal L3 resonator.

    PubMed

    Gui, Chengcheng; Zhang, Yong; Du, Jing; Xia, Jinsong; Wang, Jian

    2015-06-01

    We design and fabricate a silicon photonic crystal L3 resonator for chip-scale analog signal transmission. The lattice constant (a) is 420 nm, and the radius of holes (r) is 126 nm. The three holes adjacent to the cavity are laterally shifted by 0.175a, 0.025a and 0.175a, respectively. We experimentally evaluate the performance of silicon photonic crystal L3 resonator for chip-scale analog signal transmission. The spurious free dynamic ranges (SFDRs) of the second-order harmonic distortion (SHD) and the third-order harmonic distortion (THD), which are important factors to assess the analog link performance, are measured for the chip-scale analog signal transmission through the fabricated silicon photonic crystal L3 resonator. The SHD SFDR and THD SFDR are measured to be ~34.6 dB and ~52.2 dB even with the input optical carrier sitting at the dip resonance wavelength of the fabricated silicon photonic crystal L3 resonator. The influences of the optical carrier wavelength and input optical power on the SHD SFDR and THD SFDR are studied in the experiment. The impacts of geometric parameters of the cavity structure (lattice constant, radius of holes, shift of the hole) on the analog signal transmission are also analyzed, showing favorable analog link performance with relatively large fabrication tolerance to design parameters.

  18. Observation of Transparency of Erbium-doped Silicon Nitride in Photonic Crystal Nanobeam Cavities

    DTIC Science & Technology

    2010-06-21

    Neu, and C. Becher, “Design of Photonic Crystal Microcavities in Diamond Films,” Opt. Express 16, 1632-1644 (2008). 9. M. Eichenfield, R. Camacho , J...effort to fabricate light emitting devices with Silicon complementary metal-oxide- semiconductor (Si-CMOS) compat- ible materials. One possible material

  19. Spatio-energetic cross-talks in photon counting detectors: detector model and correlated Poisson data generator

    NASA Astrophysics Data System (ADS)

    Taguchi, Katsuyuki; Polster, Christoph; Lee, Okkyun; Kappler, Steffen

    2016-03-01

    An x-ray photon interacts with photon counting detectors (PCDs) and generates an electron charge cloud or multiple clouds. The clouds (thus, the photon energy) may be split between two adjacent PCD pixels when the interaction occurs near pixel boundaries, producing a count at both of the two pixels. This is called double-counting with charge sharing. The output of individual PCD pixel is Poisson distributed integer counts; however, the outputs of adjacent pixels are correlated due to double-counting. Major problems are the lack of detector noise model for the spatio-energetic crosstalk and the lack of an efficient simulation tool. Monte Carlo simulation can accurately simulate these phenomena and produce noisy data; however, it is not computationally efficient. In this study, we developed a new detector model and implemented into an efficient software simulator which uses a Poisson random number generator to produce correlated noisy integer counts. The detector model takes the following effects into account effects: (1) detection efficiency and incomplete charge collection; (2) photoelectric effect with total absorption; (3) photoelectric effect with fluorescence x-ray emission and re-absorption; (4) photoelectric effect with fluorescence x-ray emission which leaves PCD completely; and (5) electric noise. The model produced total detector spectrum similar to previous MC simulation data. The model can be used to predict spectrum and correlation with various different settings. The simulated noisy data demonstrated the expected performance: (a) data were integers; (b) the mean and covariance matrix was close to the target values; (c) noisy data generation was very efficient

  20. Tilted angle CZT detector for photon counting/energy weighting x-ray and CT imaging.

    PubMed

    Shikhaliev, Polad M

    2006-09-07

    X-ray imaging with a photon counting/energy weighting detector can provide the highest signal to noise ratio (SNR). Scanning slit/multi-slit x-ray image acquisition can provide a dose-efficient scatter rejection, which increases SNR. Use of a photon counting/energy weighting detector in a scanning slit/multi-slit acquisition geometry could provide highest possible dose efficiency in x-ray and CT imaging. Currently, the most advanced photon counting detector is the cadmium zinc telluride (CZT) detector, which, however, is suboptimal for energy resolved x-ray imaging. A tilted angle CZT detector is proposed in this work for applications in photon counting/energy weighting x-ray and CT imaging. In tilted angle configuration, the x-ray beam hits the surface of the linear array of CZT crystals at a small angle. This allows the use of CZT crystals of a small thickness while maintaining the high photon absorption. Small thickness CZT detectors allow for a significant decrease in the polarization effect in the CZT volume and an increase in count rate. The tilted angle CZT with a small thickness also provides higher spatial and energy resolution, and shorter charge collection time, which potentially enables fast energy resolving x-ray image acquisition. In this work, the major performance parameters of the tilted angle CZT detector, including its count rate, spatial resolution and energy resolution, were evaluated. It was shown that for a CZT detector with a 0.7 mm thickness and 13 degrees tilting angle, the maximum count rate can be increased by 10.7 times, while photon absorption remains >90% at photon energies up to 120 keV. Photon counting/energy weighting x-ray imaging using a tilted angle CZT detector was simulated. SNR improvement due to optimal photon energy weighting was 23% and 14% when adipose contrast element, inserted in soft tissue with 10 cm and 20 cm thickness, respectively, was imaged using 5 energy bins and weighting factors optimized for the adipose. SNR

  1. Developments and first measurements of Ultra-Fast Silicon Detectors produced at FBK

    NASA Astrophysics Data System (ADS)

    Paternoster, G.; Arcidiacono, R.; Boscardin, M.; Cartiglia, N.; Cenna, F.; Dalla Betta, G. F.; Ferrero, M.; Mulargia, R.; Obertino, M.; Pancheri, L.; Piemonte, C.; Sola, V.

    2017-02-01

    Segmented silicon sensors with internal gain, the so called Ultra-FAST Silicon Detectors (UFSD), have been produced at FBK for the first time. UFSD are based on the concept of Low-Gain Avalanche Detectors (LGAD), which are silicon detectors with an internal, low multiplication mechanism (gain ~ 10). This production houses two main type of devices: one type where the gain layer is on the same side of the read-out electrodes, the other type where the gain layer is on the side opposite to the pixellated electrodes (reverse-LGAD). Several technological splits have been included in the first production run, with the aim to tune the implantation dose of the multiplication layer, which controls the gain value of the detector. An extended testing on the wafers has been performed and the results are in line with simulations: the fabricated detectors show good performances, with breakdown voltages above 1000 Volts, and gain values in the range of 5–60 depending on the technological split. The detectors timing resolution has been measured by means of a laboratory setup based on an IR picosecond laser. The sample with higher gain shows time resolution of 55 ps at high reverse bias voltage, indicating very promising performance for future particle tracking applications.

  2. Quantum random-number generator based on a photon-number-resolving detector

    NASA Astrophysics Data System (ADS)

    Ren, Min; Wu, E.; Liang, Yan; Jian, Yi; Wu, Guang; Zeng, Heping

    2011-02-01

    We demonstrated a high-efficiency quantum random number generator which takes inherent advantage of the photon number distribution randomness of a coherent light source. This scheme was realized by comparing the photon flux of consecutive pulses with a photon number resolving detector. The random bit generation rate could reach 2.4 MHz with a system clock of 6.0 MHz, corresponding to a random bit generation efficiency as high as 40%. The random number files passed all the stringent statistical tests.

  3. Simultaneous x-ray fluorescence and K-edge CT imaging with photon-counting detectors

    NASA Astrophysics Data System (ADS)

    Li, Liang; Li, Ruizhe; Zhang, Siyuan; Chen, Zhiqiang

    2016-10-01

    Rapid development of the X-ray phonon-counting detection technology brings tremendous research and application opportunities. In addition to improvements in conventional X-ray imaging performance such as radiation dose utilization and beam hardening correction, photon-counting detectors allows significantly more efficient X-ray fluorescence (XRF) and K-edge imaging, and promises a great potential of X-ray functional, cellular and molecular imaging. XRF is the characteristic emission of secondary X-ray photons from a material excited by initial X-rays. The phenomenon is widely used for chemical and elemental analysis. K-edge imaging identifies a material based on its chemically-specific absorption discontinuity over X-ray photon energy. In this paper, we try to combine XRF and K-edge signals from the contrast agents (e.g., iodine, gadolinium, gold nanoparticles) to simultaneously realize XFCT and K-edge CT imaging for superior image performance. As a prerequisite for this dual-modality imaging, the accurate energy calibration of multi-energy-bin photon-counting detectors is critically important. With the measured XRF data of different materials, we characterize the energy response function of a CZT detector for energy calibration and spectrum reconstruction, which can effectively improve the energy resolution and decrease the inconsistence of the photon counting detectors. Then, a simultaneous K-edge and X-ray fluorescence CT imaging (SKYFI) experimental setup is designed which includes a cone-beam X-ray tube, two separate photon counting detector arrays, a pin-hole collimator and a rotation stage. With a phantom containing gold nanoparticles the two types of XFCT and K-edge CT datasets are collected simultaneously. Then, XFCT and K-edge CT images are synergistically reconstructed in a same framework. Simulation results are presented and quantitative analyzed and compared with the separate XFCT and K-edge CT results.

  4. Experimental determination of the lateral dose response functions of detectors to be applied in the measurement of narrow photon-beam dose profiles

    NASA Astrophysics Data System (ADS)

    Poppinga, D.; Meyners, J.; Delfs, B.; Muru, A.; Harder, D.; Poppe, B.; Looe, HK

    2015-12-01

    This study aims at the experimental determination of the detector-specific 1D lateral dose response function K(x) and of its associated rotational symmetric counterpart K(r) for a set of high-resolution detectors presently used in narrow-beam photon dosimetry. A combination of slit-beam, radiochromic film, and deconvolution techniques served to accomplish this task for four detectors with diameters of their sensitive volumes ranging from 1 to 2.2 mm. The particular aim of the experiment was to examine the existence of significant negative portions of some of these response functions predicted by a recent Monte-Carlo-simulation (Looe et al 2015 Phys. Med. Biol. 60 6585-607). In a 6 MV photon slit beam formed by the Siemens Artiste collimation system and a 0.5 mm wide slit between 10 cm thick lead blocks serving as the tertiary collimator, the true cross-beam dose profile D(x) at 3 cm depth in a large water phantom was measured with radiochromic film EBT3, and the detector-affected cross-beam signal profiles M(x) were recorded with a silicon diode, a synthetic diamond detector, a miniaturized scintillation detector, and a small ionization chamber. For each detector, the deconvolution of the convolution integral M(x)  =  K(x)  ∗  D(x) served to obtain its specific 1D lateral dose response function K(x), and K(r) was calculated from it. Fourier transformations and back transformations were performed using function approximations by weighted sums of Gaussian functions and their analytical transformation. The 1D lateral dose response functions K(x) of the four types of detectors and their associated rotational symmetric counterparts K(r) were obtained. Significant negative curve portions of K(x) and K(r) were observed in the case of the silicon diode and the diamond detector, confirming the Monte-Carlo-based prediction (Looe et al 2015 Phys. Med. Biol. 60 6585-607). They are typical for the perturbation of the secondary electron field by a detector with

  5. Coupled optical and electrical modeling of solar cell based on conical pore silicon photonic crystals

    NASA Astrophysics Data System (ADS)

    Deinega, Alexei; Eyderman, Sergey; John, Sajeev

    2013-06-01

    We compare the efficiency of thin film photonic crystal solar cells consisting of conical pores and nanowires. Solving both Maxwell's equations and the semiconductor drift-diffusion in each geometry, we identify optimal junction and contact positions and study the influence of bulk and surface recombination losses on solar cell efficiency. We find that using only 1 μm of silicon, sculpted in the form of an inverted slanted conical pore photonic crystal film, and using standard contact recombination velocities, solar power conversion efficiency of 17.5% is obtained when the carrier diffusion length exceeds 10 μm. Reducing the contact recombination velocity to 100 cm s-1 yields efficiency up to 22.5%. Further efficiency improvements are possible (with 1 μm of silicon) in a tandem cell with amorphous silicon at the top.

  6. Optimization of metallic microheaters for high-speed reconfigurable silicon photonics.

    PubMed

    Atabaki, A H; Shah Hosseini, E; Eftekhar, A A; Yegnanarayanan, S; Adibi, A

    2010-08-16

    The strong thermooptic effect in silicon enables low-power and low-loss reconfiguration of large-scale silicon photonics. Thermal reconfiguration through the integration of metallic microheaters has been one of the more widely used reconfiguration techniques in silicon photonics. In this paper, structural and material optimizations are carried out through heat transport modeling to improve the reconfiguration speed of such devices, and the results are experimentally verified. Around 4 micros reconfiguration time are shown for the optimized structures. Moreover, sub-microsecond reconfiguration time is experimentally demonstrated through the pulsed excitation of the microheaters. The limitation of this pulsed excitation scheme is also discussed through an accurate system-level model developed for the microheater response.

  7. Enhanced efficiency of ultrathin (˜500 nm)-film microcrystalline silicon photonic crystal solar cells

    NASA Astrophysics Data System (ADS)

    De Zoysa, Menaka; Ishizaki, Kenji; Tanaka, Yoshinori; Sai, Hitoshi; Matsubara, Koji; Noda, Susumu

    2017-01-01

    Enhancing the absorption of thin-film microcrystalline silicon solar cells at 600-1000 nm wavelengths is very important to the improvement of the energy conversion efficiency. This can be achieved by creating a large number of resonant modes utilizing two-dimensional photonic crystal band edges, which exceeds the Lambertian limit of absorption in random textures. We focus on suppressing the parasitic absorption of back-reflector metal and doped layers in photonic crystal microcrystalline silicon solar cells. We achieve a high active-area current density of 22.6 mA cm-2 for an ultrathin (˜500 nm)-film silicon layer and obtain an active-area efficiency of ˜9.1%, as independently confirmed by the CSMT of AIST.

  8. Modeling of the optical properties of porous silicon photonic crystals in the visible spectral range

    NASA Astrophysics Data System (ADS)

    Dovzhenko, D. S.; Martynov, I. L.; Kryukova, I. S.; Chistyakov, A. A.; Nabiev, I. R.

    2017-01-01

    Optical devices based on photonic crystals are of great interest because they can be efficiently used in laser physics and biosensing. Photonic crystals allow one to control the propagation of electromagnetic waves and to change the emission characteristics of luminophores embedded into photonic structures. One of the most interesting materials for developing one-dimensional photonic crystals is porous silicon. However, an important problem in application of this material is the control of the refractive index of layers by changing their porosity, as well as the refractive index dispersion. In addition, it is important to have the possibility of modeling the optical properties of structures to choose precisely select the fabrication parameters and produce one-dimensional photonic crystals with prescribed properties. In order to solve these problems, we used a mathematical model based on the transfer matrix method, using the Bruggeman model, and on the dispersion of silicon refractive index. We fabricated microcavities by electrochemical etching of silicon, with parameters determined by the proposed model, and measured their reflection spectra. The calculated results showed good agreement with experimental data. The model proposed allowed us to achieve a microcavity Q-factor of 160 in the visible region.

  9. Single-Photon-Sensitive HgCdTe Avalanche Photodiode Detector

    NASA Technical Reports Server (NTRS)

    Huntington, Andrew

    2013-01-01

    The purpose of this program was to develop single-photon-sensitive short-wavelength infrared (SWIR) and mid-wavelength infrared (MWIR) avalanche photodiode (APD) receivers based on linear-mode HgCdTe APDs, for application by NASA in light detection and ranging (lidar) sensors. Linear-mode photon-counting APDs are desired for lidar because they have a shorter pixel dead time than Geiger APDs, and can detect sequential pulse returns from multiple objects that are closely spaced in range. Linear-mode APDs can also measure photon number, which Geiger APDs cannot, adding an extra dimension to lidar scene data for multi-photon returns. High-gain APDs with low multiplication noise are required for efficient linear-mode detection of single photons because of APD gain statistics -- a low-excess-noise APD will generate detectible current pulses from single photon input at a much higher rate of occurrence than will a noisy APD operated at the same average gain. MWIR and LWIR electron-avalanche HgCdTe APDs have been shown to operate in linear mode at high average avalanche gain (M > 1000) without excess multiplication noise (F = 1), and are therefore very good candidates for linear-mode photon counting. However, detectors fashioned from these narrow-bandgap alloys require aggressive cooling to control thermal dark current. Wider-bandgap SWIR HgCdTe APDs were investigated in this program as a strategy to reduce detector cooling requirements.

  10. SVX3: A deadtimeless readout chip for silicon strip detectors

    NASA Astrophysics Data System (ADS)

    Zimmerman, T.; Huffman, T.; Srage, J.; Stroehmer, R.; Yarema, R.; Garcia-Sciveras, M.; Luo, L.; Milgrome, O.

    1998-02-01

    A new silicon strip readout chip called the SVX3 has been designed for the 720 000 channel CDF silicon upgrade at Fermilab. SVX3 incorporates an integrator, analog delay pipeline, ADC, and data sparsification for each of 128 identical channels. Many of the operating parameters are programmable via a serial bit stream, which allows the chip to be used under a variety of conditions. Distinct features of SVX3 include use of a backside substrate contact for optimal ground referencing, and the capability of simultaneous signal acquisition and digital readout, allowing deadtimeless operation in the Fermilab Tevatron.

  11. Silicon Wafer-Scale Substrate for Microshutters and Detector Arrays

    NASA Technical Reports Server (NTRS)

    Jhabvala, Murzy; Franz, David E.; Ewin, Audrey J.; Jhabvala, Christine; Babu, Sachi; Snodgrass, Stephen; Costen, Nicholas; Zincke, Christian

    2009-01-01

    The silicon substrate carrier was created so that a large-area array (in this case 62,000+ elements of a microshutter array) and a variety of discrete passive and active devices could be mounted on a single board, similar to a printed circuit board. However, the density and number of interconnects far exceeds the capabilities of printed circuit board technology. To overcome this hurdle, a method was developed to fabricate this carrier out of silicon and implement silicon integrated circuit (IC) technology. This method achieves a large number of high-density metal interconnects; a 100-percent yield over a 6-in. (approximately equal to 15-cm) diameter wafer (one unit per wafer); a rigid, thermally compatible structure (all components and operating conditions) to cryogenic temperatures; re-workability and component replaceability, if required; and the ability to precisely cut large-area holes through the substrate. A method that would employ indium bump technology along with wafer-scale integration onto a silicon carrier was also developed. By establishing a silicon-based version of a printed circuit board, the objectives could be met with one solution. The silicon substrate would be 2 mm thick to survive the environmental loads of a launch. More than 2,300 metal traces and over 1,500 individual wire bonds are required. To mate the microshutter array to the silicon substrate, more than 10,000 indium bumps are required. A window was cut in the substrate to allow the light signal to pass through the substrate and reach the microshutter array. The substrate was also the receptacle for multiple unpackaged IC die wire-bonded directly to the substrate (thus conserving space over conventionally packaged die). Unique features of this technology include the implementation of a 2-mmthick silicon wafer to withstand extreme mechanical loads (from a rocket launch); integrated polysilicon resistor heaters directly on the substrate; the precise formation of an open aperture

  12. Comparison of ordered and disordered silicon nanowire arrays: experimental evidence of photonic crystal modes.

    PubMed

    Dhindsa, Navneet; Saini, Simarjeet S

    2016-05-01

    We experimentally compared the reflectance between ordered and disordered silicon nanowires to observe the evidence of photonic crystal modes. For similar diameters, the resonance peaks for the ordered nanowires at a spacing of 400 nm was at a shorter wavelength than the disordered nanowires, consistent to the excitation of photonic crystal modes. Furthermore, the resonant wavelength didn't shift while changing the density of the disordered nanowires, whereas there was a significant shift observed in the ordered ones. At an ordered spacing of 800 nm, the resonance wavelength approached that of the disordered structures, indicating that the ordered structures were starting to behave like individual waveguides. To our knowledge, this is the first direct experimental observation of photonic crystal modes in vertical periodic silicon nanowire arrays.

  13. Ultra-compact silicon photonic integrated interferometer for swept-source optical coherence tomography.

    PubMed

    Yurtsever, Günay; Weiss, Nicolás; Kalkman, Jeroen; van Leeuwen, Ton G; Baets, Roel

    2014-09-01

    We demonstrate an ultra-compact silicon integrated photonic interferometer for swept-source optical coherence tomography (SS-OCT). The footprint of the integrated interferometer is only 0.75×5  mm2. The design consists of three 2×2 splitters, a 13 cm physical length (50.4 cm optical length) reference arm, and grating couplers. The photonic integrated circuit was used as the interferometer of an SS-OCT system. The sensitivity of the system was measured to be -62  dB with 115 μW power delivered to the sample. Using the system, we demonstrate cross-sectional OCT imaging of a layered tissue phantom. We also discuss potential improvements in passive silicon photonic integrated circuit design and integration with active components.

  14. Room temperature single-photon detectors for high bit rate quantum key distribution

    SciTech Connect

    Comandar, L. C.; Patel, K. A.; Fröhlich, B. Lucamarini, M.; Sharpe, A. W.; Dynes, J. F.; Yuan, Z. L.; Shields, A. J.; Penty, R. V.

    2014-01-13

    We report room temperature operation of telecom wavelength single-photon detectors for high bit rate quantum key distribution (QKD). Room temperature operation is achieved using InGaAs avalanche photodiodes integrated with electronics based on the self-differencing technique that increases avalanche discrimination sensitivity. Despite using room temperature detectors, we demonstrate QKD with record secure bit rates over a range of fiber lengths (e.g., 1.26 Mbit/s over 50 km). Furthermore, our results indicate that operating the detectors at room temperature increases the secure bit rate for short distances.

  15. Orthogonal sequencing multiplexer for superconducting nanowire single-photon detectors with RSFQ electronics readout circuit.

    PubMed

    Hofherr, Matthias; Wetzstein, Olaf; Engert, Sonja; Ortlepp, Thomas; Berg, Benjamin; Ilin, Konstantin; Henrich, Dagmar; Stolz, Ronny; Toepfer, Hannes; Meyer, Hans-Georg; Siegel, Michael

    2012-12-17

    We propose an efficient multiplexing technique for superconducting nanowire single-photon detectors based on an orthogonal detector bias switching method enabling the extraction of the average count rate of a set of detectors by one readout line. We implemented a system prototype where the SNSPDs are connected to an integrated cryogenic readout and a pulse merger system based on rapid single flux quantum (RSFQ) electronics. We discuss the general scalability of this concept, analyze the environmental requirements which define the resolvability and the accuracy and demonstrate the feasibility of this approach with experimental results for a SNSPD array with four pixels.

  16. Photon lifetime correlated increase of Raman scattering and third-harmonic generation in silicon nanowire arrays

    NASA Astrophysics Data System (ADS)

    Zabotnov, S. V.; Kholodov, M. M.; Georgobiani, V. A.; Presnov, D. E.; Golovan, L. A.; Kashkarov, P. K.

    2016-03-01

    Light propagation in silicon nanowire layers is studied via Raman scattering, third-harmonic generation and cross-correlation function measurements. The studied silicon nanowire arrays are characterized by a wire diameter of 50-100 nm and a layer thickness ranging from 0.2-16 μm. These structures are mesoscopic for light in the visible and near infrared ranges. The Raman signal increases monotonically with layer thickness increases at a 1.064 μm pump wavelength. The Stokes component for silicon nanowire arrays with a thickness larger than 2 μm exceeds that for crystalline silicon by more than an order. At the mentioned thicknesses, an increase is also registered for the third-harmonic signal, one that is up to fourfold greater than that for crystalline silicon for a 1.25 μm pump wavelength. Measurements of cross-correlation functions for the scattered photons evidence the significant photon lifetime increase in the silicon nanowire layers at their thickness increase. This fact can be connected with multiple scattering inside the studied mesoscopic structures and the increase of the interaction length for the Raman and third-harmonic generation processes.

  17. CMOS-compatible fabrication, micromachining, and bonding strategies for silicon photonics

    NASA Astrophysics Data System (ADS)

    Heck, John; Jones, Richard; Paniccia, Mario J.

    2011-02-01

    The adoption of optical technologies by high-volume consumer markets is severely limited by the cost and complexity of manufacturing complete optical transceiver systems. This is in large part because "boutique" semiconductor fabrication processes are required for III-V lasers, modulators, and photodetectors; furthermore, precision bonding and painstaking assembly are needed to integrate or assemble such dissimilar devices and materials together. On the other hand, 200mm and 300mm silicon process technology has been bringing ever-increasing computing power to the masses by relentless cost reduction for several decades. Intel's silicon photonics program aims to marry this CMOS infrastructure and recent developments in MEMS manufacturing with the burgeoning field of microphotonics to make low cost, high-speed optical links ubiquitous. In this paper, we will provide an overview of several aspects of silicon photonics technology development in a CMOS fabrication line. First, we will describe fabrication strategies from the MEMS industry for micromachining silicon to create passive optical devices such as mirrors, waveguides, and facets, as well as alignment features. Second, we will discuss some of the challenges of fabricating hybrid III-V lasers on silicon, including such aspects as hybrid integration of InP-based materials with silicon using various bonding methods, etching of InP films, and contact formation using CMOS-compatible metals.

  18. Full characterization of laser-accelerated ion beams using Faraday cup, silicon carbide, and single-crystal diamond detectors

    SciTech Connect

    Margarone, D.; Prokupek, J.; Rus, B.; Krasa, J.; Velyhan, A.; Laska, L.; Giuffrida, L.; Torrisi, L.; Picciotto, A.; Nowak, T.; Musumeci, P.; Mocek, T.; Ullschmied, J.

    2011-05-15

    Multi-MeV beams of light ions have been produced using the 300 picosecond, kJ-class iodine laser, operating at the Prague Asterix Laser System facility in Prague. Real-time ion diagnostics have been performed by the use of various time-of-flight (TOF) detectors: ion collectors (ICs) with and without absorber thin films, new prototypes of single-crystal diamond and silicon carbide detectors, and an electrostatic ion mass spectrometer (IEA). In order to suppress the long photopeak induced by soft X-rays and to avoid the overlap with the signal from ultrafast particles, the ICs have been shielded with Al foil filters. The application of large-bandgap semiconductor detectors (>3 eV) ensured cutting of the plasma-emitted visible and soft-UV radiation and enhancing the sensitivity to the very fast proton/ion beams. Employing the IEA spectrometer, various ion species and charge states in the expanding laser-plasma have been determined. Processing of the experimental data based on the TOF technique, including estimation of the plasma fast proton maximum and peak energy, ion beam currents and total charge, total number of fast protons, as well as deconvolution processes, ion stopping power, and ion/photon transmission calculations for the different metallic filters used, are reported.

  19. Full characterization of laser-accelerated ion beams using Faraday cup, silicon carbide, and single-crystal diamond detectors

    NASA Astrophysics Data System (ADS)

    Margarone, D.; Krása, J.; Giuffrida, L.; Picciotto, A.; Torrisi, L.; Nowak, T.; Musumeci, P.; Velyhan, A.; Prokůpek, J.; Láska, L.; Mocek, T.; Ullschmied, J.; Rus, B.

    2011-05-01

    Multi-MeV beams of light ions have been produced using the 300 picosecond, kJ-class iodine laser, operating at the Prague Asterix Laser System facility in Prague. Real-time ion diagnostics have been performed by the use of various time-of-flight (TOF) detectors: ion collectors (ICs) with and without absorber thin films, new prototypes of single-crystal diamond and silicon carbide detectors, and an electrostatic ion mass spectrometer (IEA). In order to suppress the long photopeak induced by soft X-rays and to avoid the overlap with the signal from ultrafast particles, the ICs have been shielded with Al foil filters. The application of large-bandgap semiconductor detectors (>3 eV) ensured cutting of the plasma-emitted visible and soft-UV radiation and enhancing the sensitivity to the very fast proton/ion beams. Employing the IEA spectrometer, various ion species and charge states in the expanding laser-plasma have been determined. Processing of the experimental data based on the TOF technique, including estimation of the plasma fast proton maximum and peak energy, ion beam currents and total charge, total number of fast protons, as well as deconvolution processes, ion stopping power, and ion/photon transmission calculations for the different metallic filters used, are reported.

  20. Characterization of a PET detector head based on continuous LYSO crystals and monolithic, 64-pixel silicon photomultiplier matrices.

    PubMed

    Llosá, G; Barrio, J; Lacasta, C; Bisogni, M G; Del Guerra, A; Marcatili, S; Barrillon, P; Bondil-Blin, S; de la Taille, C; Piemonte, C

    2010-12-07

    The characterization of a PET detector head based on continuous LYSO crystals and silicon photomultiplier (SiPM) arrays as photodetectors has been carried out for its use in the development of a small animal PET prototype. The detector heads are composed of a continuous crystal and a SiPM matrix with 64 pixels in a common substrate, fabricated specifically for this project. Three crystals of 12 mm × 12 mm × 5 mm size with different types of painting have been tested: white, black and black on the sides but white on the back of the crystal. The best energy resolution, obtained with the white crystal, is 16% FWHM. The detector response is linear up to 1275 keV. Tests with different position determination algorithms have been carried out with the three crystals. The spatial resolution obtained with the center of gravity algorithm is around 0.9 mm FWHM for the three crystals. As expected, the use of this algorithm results in the displacement of the reconstructed position toward the center of the crystal, more pronounced in the case of the white crystal. A maximum likelihood algorithm has been tested that can reconstruct correctly the interaction position of the photons also in the case of the white crystal.